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Sample records for carbon films grown

  1. Ultrafast carrier dynamics in purified and as-grown single-walled carbon nanotube films

    Institute of Scientific and Technical Information of China (English)

    Long Yong-Bing; Song Li; Zhang Chun-Yu; Wang Li; Fu Pan-Ming; Zhang Zhi-Guo; Xie Si-Shen; Wang Guo-Ping

    2005-01-01

    Ultrafast time-resolved optical transmissions in purified and as-grown single-walled carbon nanotube films are measured at a temperature of 200K. The signal of the purified sample shows a crossover from photobleaching to photoabsorption. The former and the latter are interpreted as the state filling and the red shift of the π-plasmon,respectively. The signal of the as-grown sample can be perfectly fitted by a single-exponential with a time constant of 232fs. The disappearance of the negative component in the as-grown sample is attributed to the charge transfer between the semiconducting nanotubes and the impurities.

  2. Nanostructured Diamond-Like Carbon Films Grown by Off-Axis Pulsed Laser Deposition

    Directory of Open Access Journals (Sweden)

    Seong Shan Yap

    2015-01-01

    Full Text Available Nanostructured diamond-like carbon (DLC films instead of the ultrasmooth film were obtained by pulsed laser ablation of pyrolytic graphite. Deposition was performed at room temperature in vacuum with substrates placed at off-axis position. The configuration utilized high density plasma plume arriving at low effective angle for the formation of nanostructured DLC. Nanostructures with maximum size of 50 nm were deposited as compared to the ultrasmooth DLC films obtained in a conventional deposition. The Raman spectra of the films confirmed that the films were diamond-like/amorphous in nature. Although grown at an angle, ion energy of >35 eV was obtained at the off-axis position. This was proposed to be responsible for subplantation growth of sp3 hybridized carbon. The condensation of energetic clusters and oblique angle deposition correspondingly gave rise to the formation of nanostructured DLC in this study.

  3. Nanostructured silicon carbon thin films grown by plasma enhanced chemical vapour deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Coscia, U. [Dipartimento di Fisica, Università di Napoli “Federico II” Complesso Universitario MSA, via Cinthia, 80126 Napoli (Italy); CNISM Unita' di Napoli, Complesso Universitario MSA, via Cinthia, 80126 Napoli (Italy); Ambrosone, G., E-mail: ambrosone@na.infn.it [Dipartimento di Fisica, Università di Napoli “Federico II” Complesso Universitario MSA, via Cinthia, 80126 Napoli (Italy); SPIN-CNR, Complesso Universitario MSA, via Cinthia, 80126 Napoli (Italy); Basa, D.K. [Department of Physics, Utkal University, Bhubaneswar 751004 (India); Rigato, V. [INFN Laboratori Nazionali Legnaro, 35020 Legnaro (Padova) (Italy); Ferrero, S.; Virga, A. [Dipartimento di Scienza Applicata e Tecnologia, Politecnico di Torino, C.so Duca degli Abruzzi 24, 10129 Torino (Italy)

    2013-09-30

    Nanostructured silicon carbon thin films, composed of Si nanocrystallites embedded in hydrogenated amorphous silicon carbon matrix, have been prepared by varying rf power in ultra high vacuum plasma enhanced chemical vapour deposition system using silane and methane gas mixtures diluted in hydrogen. In this paper we have studied the compositional, structural and electrical properties of these films as a function of rf power. It is shown that with increasing rf power the atomic densities of carbon and hydrogen increase while the atomic density of silicon decreases, resulting in a reduction in the mass density. Further, it is demonstrated that carbon is incorporated into amorphous matrix and it is mainly bonded to silicon. The study has also revealed that the crystalline volume fraction decreases with increase in rf power and that the films deposited with low rf power have a size distribution of large and small crystallites while the films deposited with relatively high power have only small crystallites. Finally, the enhanced transport properties of the nanostructured silicon carbon films, as compared to amorphous counterpart, have been attributed to the presence of Si nanocrystallites. - Highlights: • The mass density of silicon carbon films decreases from 2.3 to 2 g/cm{sup 3}. • Carbon is incorporated in the amorphous phase and it is mainly bonded to silicon. • Nanostructured silicon carbon films are deposited at rf power > 40 W. • Si nanocrystallites in amorphous silicon carbon enhance the electrical properties.

  4. Effect of acetylene flow rate on morphology and structure of carbon nanotube thick films grown by thermal chemical vapor deposition

    Institute of Scientific and Technical Information of China (English)

    CAO Zhangyi; SUN Zhuo; GUO Pingsheng; CHEN Yiwei

    2007-01-01

    Carbon nanotube (CNT) films were grown on nickel foil substrates by thermal chemical vapor deposition (CVD) with acetylene and hydrogen as the precursors. The morphology and structure of CNTs depending on the acetylene flow rate were characterized by a scanning electron microscope (SEM),a transmission electron microscope (TEM) and a Raman spectrometer,respectively.The effect of acetylene flow rate on the morphology and structure of CNT films was investigated.By increasing the acetylene flow rate from 10 to 90 sccm (standard cubic centimeter perminute),the yield and the diameter of CNTs increase.Also, the defects and amorphous phase in CNT films increase with increasing acetylene flow rate.

  5. Properties of boron and phosphorous incorporated tetrahedral amorphous carbon films grown using filtered cathodic vacuum arc process

    Energy Technology Data Exchange (ETDEWEB)

    Panwar, O.S., E-mail: ospanwar@mail.nplindia.ernet.in [Plasma Processed Materials Group, National Physical Laboratory (CSIR), Dr. K.S. Krishnan Road, New Delhi 110012 (India); Khan, Mohd Alim [Plasma Processed Materials Group, National Physical Laboratory (CSIR), Dr. K.S. Krishnan Road, New Delhi 110012 (India); Satyanarayana, B.S. [40, Sreeniketan, NDSE 24, New Delhi 110096 (India); Kumar, Sushil; Ishpal [Plasma Processed Materials Group, National Physical Laboratory (CSIR), Dr. K.S. Krishnan Road, New Delhi 110012 (India)

    2010-04-15

    This paper reports the electrical, mechanical, structural and field emission properties of as grown and also boron and phosphorous incorporated tetrahedral amorphous carbon (ta-C) films, deposited using a filtered cathodic vacuum arc process. The effect of varying boron and phosphorous content (up to 2.0 at.% in to ta-C) on the conductivity ({sigma}{sub D}), activation energy ({Delta}E{sub 1}), hardness, microstructure, emission threshold (E{sub turn-ON}) and emission current density (J) at 12.5 V/{mu}m of ta-C: B and ta-C: P films deposited at a high negative substrate bias of -300 V are reported. It is observed that both boron and phosphorous incorporation leads to a nearly an order increase in {sigma}{sub D} and corresponding decrease in {Delta}E{sub 1} and a slight increase in hardness as compared to as grown ta-C films. In the case of field assisted electron emission, it is observed that E{sub turn-ON} increases and J decreases. The changes are attributed to the changes in the sp{sup 3}/sp{sup 2} ratio of the films due to boron and phosphorous incorporation. The effect of boron on ta-C is to give a p-type effect whereas the effect of phosphorous gives n-type doping effect.

  6. Surface morphology and grain analysis of successively industrially grown amorphous hydrogenated carbon films (a-C:H) on silicon

    Energy Technology Data Exchange (ETDEWEB)

    Catena, Alberto [Department of Physics, University of Koblenz-Landau, 56070 Koblenz (Germany); McJunkin, Thomas [Department of Physics, The Ohio State University, 43210 Columbus, Ohio (United States); Agnello, Simonpietro; Gelardi, Franco M. [Department of Physics and Chemistry, University of Palermo, 90100 Palermo (Italy); Wehner, Stefan [Department of Physics, University of Koblenz-Landau, 56070 Koblenz (Germany); Fischer, Christian B., E-mail: chrbfischer@uni-koblenz.de [Department of Physics, University of Koblenz-Landau, 56070 Koblenz (Germany)

    2015-08-30

    Graphical abstract: - Highlights: • Two different a-C:H coatings in various thicknesses on Si (1 0 0) have been studied. • For both types no significant difference in surface morphology is detectable. • The grain number with respect to their height appears randomly distributed. • In average no grain higher than 14 nm and larger than 0.05 μm{sup 2} was observed. • A height to area correlation confines all detected grains to a limited region. - Abstract: Silicon (1 0 0) has been gradually covered by amorphous hydrogenated carbon (a-C:H) films via an industrial process. Two types of these diamond-like carbon (DLC) coatings, one more flexible (f-DLC) and one more robust (r-DLC), have been investigated. Both types have been grown by a radio frequency plasma-enhanced chemical vapor deposition (RF-PECVD) technique with acetylene plasma. Surface morphologies have been studied in detail by atomic force microscopy (AFM) and Raman spectroscopy has been used to investigate the DLC structure. Both types appeared to have very similar morphology and sp{sup 2} carbon arrangement. The average height and area for single grains have been analyzed for all depositions. A random distribution of grain heights was found for both types. The individual grain structures between the f- and r-type revealed differences: the shape for the f-DLC grains is steeper than for the r-DLC grains. By correlating the average grain heights to the average grain areas for all depositions a limited region is identified, suggesting a certain regularity during the DLC deposition mechanisms that confines both values. A growth of the sp{sup 2} carbon entities for high r-DLC depositions is revealed and connected to a structural rearrangement of carbon atom hybridizations and hydrogen content in the DLC structure.

  7. Ultrahard carbon nanocomposite films

    Energy Technology Data Exchange (ETDEWEB)

    SIEGAL,MICHAEL P.; TALLANT,DAVID R.; PROVENCIO,PAULA P.; OVERMYER,DONALD L.; SIMPSON,REGINA L.; MARTINEZ-MIRANDA,L.J.

    2000-01-27

    Modest thermal annealing to 600 C of diamondlike amorphous-carbon (a-C) films grown at room temperature results in the formation of carbon nanocomposites with hardness similar to diamond. These nanocomposite films consist of nanometer-sized regions of high density a-C embedded in an a-C matrix with a reduced density of 5--10%. The authors report on the evolution of density and bonding topologies as a function of annealing temperature. Despite a decrease in density, film hardness actually increases {approximately} 15% due to the development of the nanocomposite structure.

  8. Ultrahard carbon nanocomposite films

    Energy Technology Data Exchange (ETDEWEB)

    Siegal, M. P. [Sandia National Laboratories, Albuquerque, New Mexico 87185-1421 (United States); Tallant, D. R. [Sandia National Laboratories, Albuquerque, New Mexico 87185-1421 (United States); Provencio, P. N. [Sandia National Laboratories, Albuquerque, New Mexico 87185-1421 (United States); Overmyer, D. L. [Sandia National Laboratories, Albuquerque, New Mexico 87185-1421 (United States); Simpson, R. L. [Sandia National Laboratories, Albuquerque, New Mexico 87185-1421 (United States); Martinez-Miranda, L. J. [Department of Materials and Nuclear Engineering, University of Maryland, College Park, Maryland 20742 (United States)

    2000-05-22

    Modest thermal annealing to 600 degree sign C of diamondlike amorphous-carbon (a-C) films grown at room temperature results in the formation of carbon nanocomposites with hardness similar to diamond. These nanocomposite films consist of nanometer-sized regions of high density a-C embedded in an a-C matrix with a reduced density of 5%-10%. We report on the evolution of density and bonding topologies as a function of annealing temperature. Despite a decrease in density, film hardness actually increases {approx}15% due to the development of the nanocomposite structure. (c) 2000 American Institute of Physics.

  9. Stress relief patterns of hydrogenated amorphous carbon films grown by dc-pulse plasma chemical vapor deposition

    Science.gov (United States)

    Wang, Qi; Wang, Chengbing; Wang, Zhou; Zhang, Junyan; He, Deyan

    2008-12-01

    Hydrogenated amorphous carbon films were prepared on Si (1 0 0) substrates by dc-pulse plasma chemical vapor deposition. The nature of the deposited films was characterized by Raman spectra and the stress relief patterns were observed by scanning electron microscope. Besides the well-known sinusoidal type and flower type patterns, etc., two different stress relief patterns, ring type and peg-top shape with exiguous tine on the top, were observed. The ring type in this paper was a clear ridge-cracked buckle and unusual. Two competing buckle delamination morphologies ring and sinusoidal buckling coexist. The ridge-cracked buckle in ring type was narrower than the sinusoidal buckling. Meanwhile peg-top shape with exiguous tine on the top in this paper was unusual. These different patterns supported the approach in which the stress relief forms have been analyzed using the theory of plate buckling.

  10. Pyrolyzed thin film carbon

    Science.gov (United States)

    Tai, Yu-Chong (Inventor); Liger, Matthieu (Inventor); Harder, Theodore (Inventor); Konishi, Satoshi (Inventor); Miserendino, Scott (Inventor)

    2010-01-01

    A method of making carbon thin films comprises depositing a catalyst on a substrate, depositing a hydrocarbon in contact with the catalyst and pyrolyzing the hydrocarbon. A method of controlling a carbon thin film density comprises etching a cavity into a substrate, depositing a hydrocarbon into the cavity, and pyrolyzing the hydrocarbon while in the cavity to form a carbon thin film. Controlling a carbon thin film density is achieved by changing the volume of the cavity. Methods of making carbon containing patterned structures are also provided. Carbon thin films and carbon containing patterned structures can be used in NEMS, MEMS, liquid chromatography, and sensor devices.

  11. Protolytic carbon film technology

    Energy Technology Data Exchange (ETDEWEB)

    Renschler, C.L.; White, C.A.

    1996-04-01

    This paper presents a technique for the deposition of polyacrylonitrile (PAN) on virtually any surface allowing carbon film formation with only the caveat that the substrate must withstand carbonization temperatures of at least 600 degrees centigrade. The influence of processing conditions upon the structure and properties of the carbonized film is discussed. Electrical conductivity, microstructure, and morphology control are also described.

  12. Carbon monoxide gas sensing properties of Ga-doped ZnO film grown by ion plating with DC arc discharge

    OpenAIRE

    Kishimoto, S; Akamatsu, S; Song, H.; Nomoto, J; Makino, H.; Yamamoto, T

    2014-01-01

    The carbon monoxide (CO) gas sensing properties of low-resistance heavily Ga-doped ZnO thin films were evaluated. The ZnO films with a thickness of 50 nm were deposited at 200 °C by ion plating. The electrical properties of the ZnO films were controlled by varying the oxygen assist gas flow rate during deposition. The CO gas sensitivity of ZnO films with Au electrodes was investigated in nitrogen gas at a temperature of 230 to 330 °C. CO gas concentration was varied in the r...

  13. Optical properties of diamond like carbon films containing copper, grown by high power pulsed magnetron sputtering and direct current magnetron sputtering: Structure and composition effects

    Energy Technology Data Exchange (ETDEWEB)

    Meškinis, Š., E-mail: sarunas.meskinis@ktu.lt; Čiegis, A.; Vasiliauskas, A.; Šlapikas, K.; Tamulevičius, T.; Tamulevičienė, A.; Tamulevičius, S.

    2015-04-30

    In the present study chemical composition, structure and optical properties of hydrogenated diamond like carbon films containing copper (DLC:Cu films) deposited by reactive magnetron sputtering were studied. Different modes of deposition — direct current (DC) sputtering and high power pulsed magnetron sputtering (HIPIMS) as well as two configurations of the magnetron magnetic field (balanced and unbalanced) were applied. X-ray diffractometry, Raman scattering spectroscopy, energy-dispersive X-ray spectroscopy and atomic force microscopy were used to study the structure and composition of the films. It was shown that by using HIPIMS mode contamination of the cathode during the deposition of DLC:Cu films can be suppressed. In all cases oxygen atomic concentration in the films was in 5–10 at.% range and it increased with the copper atomic concentration. The highest oxygen content was observed in the films deposited employing low ion/neutral ratio balanced DC magnetron sputtering process. According to the analysis of the parameters of Raman scattering spectra, sp{sup 3}/sp{sup 2} bond ratio decreased with the increase of Cu atomic concentration in the DLC films. Clear dependence of the extinction, absorbance and reflectance spectra on copper atomic concentration in the films was observed independently of the method of deposition. Surface plasmon resonance effect was observed only when Cu atomic concentration in DLC:Cu film was at least 15 at.%. The maximum of the surface plasmon resonance peak of the absorbance spectra of DLC:Cu films was in 600–700 nm range and redshifted with the increase of Cu amount. The ratio between the intensities of the plasmonic peak and hydrogenated amorphous carbon related peak at ~ 220 nm both in the extinction and absorbance spectra as well as peak to background ratio of DLC:Cu films increased linearly with Cu amount in the investigated 0–40 at.% range. Reflectance of the plasmonic DLC:Cu films was in 30–50% range that could be

  14. PLD-grown thin film saturable absorbers

    Energy Technology Data Exchange (ETDEWEB)

    Tellkamp, Friedjof

    2012-11-01

    The subject of this thesis is the preparation and characterization of thin films made of oxidic dielectrics which may find their application as saturable absorber in passively Q-switched lasers. The solely process applied for fabrication of the thin films was the pulsed laser deposition (PLD) which stands out against other processes by its flexibility considering the composition of the systems to be investigated. Within the scope of this thesis the applied saturable absorbers can be divided into two fundamentally different kinds of functional principles: On the one hand, saturable absorption can be achieved by ions embedded in a host medium. Most commonly applied bulk crystals are certain garnets like YAG (Y{sub 3}Al{sub 5}O{sub 12}) or the spinel forsterite (Mg{sub 2}SiO{sub 4}), in each case with chromium as dopant. Either of these media was investigated in terms of their behavior as PLD-grown saturable absorber. Moreover, experiments with Mg{sub 2}GeO{sub 4}, Ca{sub 2}GeO{sub 4}, Sc{sub 2}O{sub 3}, and further garnets like YSAG or GSGG took place. The absorption coefficients of the grown films of Cr{sup 4+}:YAG were determined by spectroscopic investigations to be one to two orders of magnitude higher compared to commercially available saturable absorbers. For the first time, passive Q-switching of a Nd:YAG laser at 1064 nm with Cr{sup 4+}:YAG thin films could be realized as well as with Cr:Sc{sub 2}O{sub 3} thin films. On the other hand, the desirable effect of saturable absorption can also be generated by quantum well structures. For this purpose, several layer system like YAG/LuAG, Cu{sub 2}O/MgO, and ZnO/corumdum were investigated. It turned out that layer systems with indium oxide (In{sub 2}O{sub 3}) did not only grew in an excellent way but also showed up a behavior regarding their photo luminescence which cannot be explained by classical considerations. The observed luminescence at roughly 3 eV (410 nm) was assumed to be of excitonic nature and its

  15. Nanostructural characterization of amorphous diamondlike carbon films

    Energy Technology Data Exchange (ETDEWEB)

    SIEGAL,MICHAEL P.; TALLANT,DAVID R.; MARTINEZ-MIRANDA,L.J.; BARBOUR,J. CHARLES; SIMPSON,REGINA L.; OVERMYER,DONALD L.

    2000-01-27

    Nanostructural characterization of amorphous diamondlike carbon (a-C) films grown on silicon using pulsed-laser deposition (PLD) is correlated to both growth energetic and film thickness. Raman spectroscopy and x-ray reflectivity probe both the topological nature of 3- and 4-fold coordinated carbon atom bonding and the topographical clustering of their distributions within a given film. In general, increasing the energetic of PLD growth results in films becoming more ``diamondlike'', i.e. increasing mass density and decreasing optical absorbance. However, these same properties decrease appreciably with thickness. The topology of carbon atom bonding is different for material near the substrate interface compared to material within the bulk portion of an a-C film. A simple model balancing the energy of residual stress and the free energies of resulting carbon topologies is proposed to provide an explanation of the evolution of topographical bonding clusters in a growing a-C film.

  16. Carbon Superatom Thin Films

    Energy Technology Data Exchange (ETDEWEB)

    Canning, A. [Cray Research, PSE, EPFL, 1015 Lausanne (Switzerland); Canning, A.; Galli, G. [Institut Romand de Recherche Numerique en Physique des Materiaux (IRRMA), IN-Ecublens, 1015 Lausanne (Switzerland); Kim, J. [Department of Physics, The Ohio State University, Columbus, Ohio 43210 (United States)

    1997-06-01

    We report on quantum molecular dynamics simulations of C{sub 28} deposition on a semiconducting surface. Our results show that under certain deposition conditions C{sub 28} {close_quote}s act as building blocks on a nanometer scale to form a thin film of nearly defect-free molecules. The C{sub 28} {close_quote}s behave as carbon superatoms, with the majority of them being threefold or fourfold coordinated, similar to carbon atoms in amorphous systems. The microscopic structure of the deposited film supports recent suggestions about the stability of a new form of carbon, the hyperdiamond solid. {copyright} {ital 1997} {ital The American Physical Society}

  17. FeP nanoparticles film grown on carbon cloth: an ultrahighly active 3D hydrogen evolution cathode in both acidic and neutral solutions.

    Science.gov (United States)

    Tian, Jingqi; Liu, Qian; Liang, Yanhui; Xing, Zhicai; Asiri, Abdullah M; Sun, Xuping

    2014-12-10

    In this Letter, we demonstrate the direct growth of FeP nanoparticles film on carbon cloth (FeP/CC) through low-temperature phosphidation of its Fe3O4/CC precursor. Remarkably, when used as an integrated 3D hydrogen evolution cathode, this FeP/CC electrode exhibits ultrahigh catalytic activity comparable to commercial Pt/C and good stability in acidic media. This electrode also performs well in neutral solutions. This work offers us the most cost-effective and active 3D cathode toward electrochemical water splitting for large-scale hydrogen fuel production.

  18. Barium Ferrite Films Grown by Laser Ablation

    NARCIS (Netherlands)

    Lisfi, A.; Lodder, J.C.; Haan, de P.; Smithers, M.A.; Roesthuis, F.J.G.

    1998-01-01

    Pulsed laser ablation (PLA) has been used to grow barium ferrite films on Al2O3 single crystal substrates. When deposition occurs in an oxidising atmosphere at high temperatures, the films are single BaFe12O19 phase, very well oriented with (001) texture, and exhibit a large perpendicular magnetic a

  19. Elastic properties of B-C-N films grown by N{sub 2}-reactive sputtering from boron carbide targets

    Energy Technology Data Exchange (ETDEWEB)

    Salas, E.; Jiménez Riobóo, R. J.; Jiménez-Villacorta, F.; Prieto, C. [Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Científicas, Cantoblanco, 28049 Madrid (Spain); Sánchez-Marcos, J. [Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Científicas, Cantoblanco, 28049 Madrid (Spain); Dept. Química-Física Aplicada, Universidad Autónoma de Madrid, Cantoblanco, 28049 Madrid (Spain); Muñoz-Martín, A.; Prieto, J. E.; Joco, V. [Centro de Microanálisis de Materiales, Universidad Autónoma de Madrid, Cantoblanco, 28049 Madrid (Spain)

    2013-12-07

    Boron-carbon-nitrogen films were grown by RF reactive sputtering from a B{sub 4}C target and N{sub 2} as reactive gas. The films present phase segregation and are mechanically softer than boron carbide films (a factor of more than 2 in Young's modulus). This fact can turn out as an advantage in order to select buffer layers to better anchor boron carbide films on substrates eliminating thermally induced mechanical tensions.

  20. SERS-applicable silver nanoisland film grown under protective coating

    Science.gov (United States)

    Reduto, I.; Chervinskii, S.; Matikainen, A.; Baklanov, A.; Kamenskii, A.; Lipovskii, A.

    2014-10-01

    We have used recently developed out-diffusion technique of growing silver nanoisland films on glass surface to grow silver nanoislands under TiO2 layer deposited on the glass. After covering the surface of silver ion-exchanged glasses with TiO2 film using atomic layer deposition technique and subsequent thermal processing of the samples in hydrogen their optical absorption spectra demonstrate the absorption peak corresponding to surface plasmon resonance in grown silver nanoislands. The spectral position of the peak is shifted relatively to the peak observed in the spectra of the nanoisland film grown on the surface of ion exchanged and annealed glass samples without dielectric cover. The applicability of the silver nanoislands grown under several nm thick protective TiO2 coating in surface-enhanced Raman scattering spectroscopy is demonstrated.

  1. Morphology in electrochemically grown conducting polymer films

    Science.gov (United States)

    Rubinstein, Israel; Gottesfeld, Shimshon; Sabatani, Eyal

    1992-01-01

    A conducting polymer film with an improved space filling is formed on a metal electrode surface. A self-assembling monolayer is formed directly on the metal surface where the monolayer has a first functional group that binds to the metal surface and a second chemical group that forms a chemical bonding site for molecules forming the conducting polymer. The conducting polymer is then conventioonally deposited by electrochemical deposition. In one example, a conducting film of polyaniline is formed on a gold electrode surface with an intermediate monolayer of p-aminothiophenol.

  2. Carbon Nanotube Microarrays Grown on Nanoflake Substrates

    Science.gov (United States)

    Schmidt, Howard K.; Hauge, Robert H.; Pint, Cary; Pheasant, Sean

    2013-01-01

    This innovation consists of a new composition of matter where single-walled carbon nanotubes (SWNTs) are grown in aligned arrays from nanostructured flakes that are coated in Fe catalyst. This method of growth of aligned SWNTs, which can yield well over 400 percent SWNT mass per unit substrate mass, exceeds current yields for entangled SWNT growth. In addition, processing can be performed with minimal wet etching treatments, leaving aligned SWNTs with superior properties over those that exist in entangled mats. The alignment of the nanotubes is similar to that achieved in vertically aligned nanotubes, which are called "carpets. " Because these flakes are grown in a state where they are airborne in a reactor, these flakes, after growing SWNTs, are termed "flying carpets. " These flakes are created in a roll-to-roll evaporator system, where three subsequent evaporations are performed on a 100-ft (approx. =30-m) roll of Mylar. The first layer is composed of a water-soluble "release layer, " which can be a material such as NaCl. After depositing NaCl, the second layer involves 40 nm of supporting layer material . either Al2O3 or MgO. The thickness of the layer can be tuned to synthesize flakes that are larger or smaller than those obtained with a 40-nm deposition. Finally, the third layer consists of a thin Fe catalyst layer with a thickness of 0.5 nm. The thickness of this layer ultimately determines the diameter of SWNT growth, and a layer that is too thick will result in the growth of multiwalled carbon nanotubes instead of single-wall nanotubes. However, between a thickness of 0.5 nm to 1 nm, single-walled carbon nanotubes are known to be the primary constituent. After this three-layer deposition process, the Mylar is rolled through a bath of water, which allows catalyst-coated flakes to detach from the Mylar. The flakes are then collected and dried. The method described here for making such flakes is analogous to that which is used to make birefringent ink that is

  3. InSb thin films grown by electrodeposition

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Joginder, E-mail: joginderchauhan82@gmail.com; Rajaram, P., E-mail: joginderchauhan82@gmail.com [School of Studies in Physics, Jiwaji University, Gwalior-474011 (India)

    2014-04-24

    We have grown InSb thin films on Cu substrates using the electrodeposition technique. The electrochemical bath from which the InSb thin films were grown was made up of a mixture of aqueous solutions of 0.05 M InCl{sub 3} and 0.03M SbCl{sub 3}, 0 .20M citric acid and 0.30M sodium citrate. Citric acid and sodium citrate were used as complexing agents to bring the reduction potential of In and Sb closer to maintain binary growth. The electrodeposited films were characterized by structural, morphological and optical studies. X-ray diffraction studies show that the films are polycrystalline InSb having the zinc blende structure. Scanning electron microscopy (SEM) studies reveal that the surface of the films is uniformly covered with submicron sized spherical particles. FTIR spectra of InSb thin films show a sharp absorption peak at wave number 1022 cm{sup −1} corresponding to the band gap. Hot probe analysis shows that the InSb thin films have p type conductivity.

  4. Thermally grown thin nitride films as a gate dielectric

    CERN Document Server

    Shin, H C; Hwang, T K; Lee, K R

    1998-01-01

    High-quality very thin films ( <=6 nm) of silicon nitride were thermally grown in ammonia atmosphere with an IR (Infrared) gold image furnace. As-grown nitride film was analyzed using AES(Auger Emission Spectroscopy). Using MIS (Metal-Insulator-Semiconductor) devices, the growth rate was calculated using CV (Capacitance-Voltage) measurements and various electrical characteristics were obtained using CV, IV (Current-Voltage), trapping, time-dependent breakdown, high-field stress, constant current injection stress and dielectric breakdown techniques. These characteristics showed that very thin thermal silicon nitride films can be used as gate dielectrics for future highly scaled-down ULSI (Ultra Large Scale Integrated) devices, especially for EEPROM (Electrically Erasable and Programmable ROM)'s.

  5. Re-grown aligned carbon nanotubes with improved field emission.

    Science.gov (United States)

    Lim, Xiaodai; Zhu, Yanwu; Varghese, Binni; Gao, Xingyu; Wee, Andrew Thye Shen; Sow, Chorng-Haur

    2012-01-01

    In this work, a simple technique to improve the field emission property of multi-walled carbon nanotubes is presented. Re-grown multi-walled carbon nanotubes are grown on the same substrates after the as-grown multi-walled carbon nanotubes are transferred to other substrates using polydimethylsiloxane as intermediation. For the duration of the synthesis of the re-grown multi-walled carbon nanotubes, similar synthesis parameters used in growing the as-grown multi-walled carbon nanotubes are utilized. As a form of possible application, field emission studies show -2.6 times improvement in field enhancement factor and more uniform emission for the re-grown multi-walled carbon nanotubes. In addition, the turn-on field is reduced from 2.85 V/microm to 1.40 V/microm. Such significant improvements are attributed to new emission sites comprising of sharp carbonaceous impurities encompassing both tip and upper portion of the multi-walled carbon nanotubes. As such, this technique presents a viable route for the production of multi-walled carbon nanotubes with better field emission quality.

  6. Low temperature CVD growth of ultrathin carbon films

    Directory of Open Access Journals (Sweden)

    Chao Yang

    2016-05-01

    Full Text Available We demonstrate the low temperature, large area growth of ultrathin carbon films by chemical vapor deposition under atmospheric pressure on various substrates. In particularly, uniform and continuous carbon films with the thickness of 2-5 nm were successfully grown at a temperature as low as 500 oC on copper foils, as well as glass substrates coated with a 100 nm thick copper layer. The characterizations revealed that the low-temperature-grown carbon films consist on few short, curved graphene layers and thin amorphous carbon films. Particularly, the low-temperature grown samples exhibited over 90% transmittance at a wavelength range of 400-750 nm and comparable sheet resistance in contrast with the 1000oC-grown one. This low-temperature growth method may offer a facile way to directly prepare visible ultrathin carbon films on various substrate surfaces that are compatible with temperatures (500-600oC used in several device processing technologies.

  7. Epitaxial yttrium iron garnet films grown by pulsed laser deposition

    Science.gov (United States)

    Dorsey, P. C.; Bushnell, S. E.; Seed, R. G.; Vittoria, C.

    1993-07-01

    Epitaxial Y3Fe5O12 (YIG) films have been grown by the pulsed laser deposition (PLD) technique on (111) gadolinium gallium garnet substrates. The effect of substrate temperature and oxygen partial pressure on the structure, composition, and magnetic properties of the films was investigated and compared to liquid phase epitaxy YIG films. The results demonstrated that epitaxial YIG films could be prepared under a wide range of deposition conditions, but narrow linewidth (ΔH≂1 Oe) films were producible only at low oxygen partial pressures (O2temperatures (Ts≳800 °C). Since the linewidth of single-crystal YIG is dominated by surface and volume defects and/or impurities, the narrow linewidth indicated that PLD is a viable technique for producing high-quality ferrite films for microwave device applications. In addition, under all deposition conditions (50-1000 mTorr and 700-850 °C) there is a uniaxial axis perpendicular to the film plane. However, at low oxygen pressure the uniaxial anisotropy energy constant Ku is negative while at high oxygen pressure Ku is positive.

  8. Thermal Conductivity of Carbon Nanotube Composite Films

    Science.gov (United States)

    Ngo, Quoc; Cruden, Brett A.; Cassell, Alan M.; Walker, Megan D.; Koehne, Jessica E.; Meyyappan, M.; Li, Jun; Yang, Cary Y.

    2004-01-01

    State-of-the-art ICs for microprocessors routinely dissipate power densities on the order of 50 W/sq cm. This large power is due to the localized heating of ICs operating at high frequencies, and must be managed for future high-frequency microelectronic applications. Our approach involves finding new and efficient thermally conductive materials. Exploiting carbon nanotube (CNT) films and composites for their superior axial thermal conductance properties has the potential for such an application requiring efficient heat transfer. In this work, we present thermal contact resistance measurement results for CNT and CNT-Cu composite films. It is shown that Cu-filled CNT arrays enhance thermal conductance when compared to as-grown CNT arrays. Furthermore, the CNT-Cu composite material provides a mechanically robust alternative to current IC packaging technology.

  9. AFM Study on Interface of HTHP As-grown Diamond Single Crystal and Metallic Film

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    The study for the interface of as-grown diamond and metallic film surrounding diamond is an attractive way for understanding diamond growth mechanism at high temperature and high pressure (HTHP), because it is that through the interface carbon atom groups from the molten film are transported to growing diamond surface. It is of great interest to perform atomic force microscopy (AFM) experiment, which provides a unique technique different from that of normal optical and electron microscopy studies, to observe the interface morphology. In the present paper,we report first that the morphologies obtained by AFM on the film are similar to those of corresponding diamond surface, and they are the remaining traces after the carbon groups moving from the film to growing diamond. The fine particles and a terrace structure with homogeneous average step height are respectively found on the diamond (100) and (111) surface. Diamond growth conditions show that its growth rates and the temperature gradients in the boundary layer of the molten film at HTHP result in the differences of surface morphologies on diamond planes,being rough on (100) plane and even on the (111) plane. The diamond growth on the (100) surface at HPHT could be considered as a process of unification of these diamond fine particles or of carbon atom groups recombination on the growing diamond crystal surface. Successive growth layer steps directly suggest the layer growth mechanism of the diamond (111) plane. The sources of the layer steps might be two-dimensional nuclei and dislocations.

  10. Diamond films grown on seeded substrates by hot-filament chemical vapour deposition with H sub 2 as the only feeding gas

    CERN Document Server

    LiuHongWu; Gao Chun Xi; Han Yong; Luo Ji Feng; Zou Guang Tian; Wen Chao

    2002-01-01

    Diamond films have been grown on polished Si substrates seeded with nanocrystalline diamond powder colloid using hot-filament chemical vapour deposition. Instead of using the conventional gaseous carbon source, a carbonized W filament was used as the carbon source. The only feeding gas was hydrogen. Compared with those produced by traditional methods, the polycrystalline diamond grown by this new method has smaller grain size. The growth mechanism is also discussed.

  11. Preparation of flat carbon support films

    NARCIS (Netherlands)

    Koning, RI; Oostergetel, GT; Brisson, A

    2003-01-01

    Wrinkling of carbon support films is known to limit the resolution of electron microscopy images of protein two-dimensional crystals. The origin of carbon wrinkling during preparation of the support films was investigated by reflected light microscopy. We observed that carbon films go through severa

  12. Carbon nanotubes grown on bulk materials and methods for fabrication

    Science.gov (United States)

    Menchhofer, Paul A.; Montgomery, Frederick C.; Baker, Frederick S.

    2011-11-08

    Disclosed are structures formed as bulk support media having carbon nanotubes formed therewith. The bulk support media may comprise fibers or particles and the fibers or particles may be formed from such materials as quartz, carbon, or activated carbon. Metal catalyst species are formed adjacent the surfaces of the bulk support material, and carbon nanotubes are grown adjacent the surfaces of the metal catalyst species. Methods employ metal salt solutions that may comprise iron salts such as iron chloride, aluminum salts such as aluminum chloride, or nickel salts such as nickel chloride. Carbon nanotubes may be separated from the carbon-based bulk support media and the metal catalyst species by using concentrated acids to oxidize the carbon-based bulk support media and the metal catalyst species.

  13. Superconducting YBa sub 2 Cu sub 3 O sub 7 thin films grown in-situ by ion beam CO-deposition

    Energy Technology Data Exchange (ETDEWEB)

    Kellett, B.K.; James, J.H.; Gauzzi, A.; Dwir, B.; Pavuna, D. (Inst. of Micro and Optoelectronics, Dept. of Physics, Federal Inst. of Tech., Lausanne (Switzerland))

    1989-12-01

    Superconducting YBCO thin films have been grown in-situ by three ion beam co-deposition sputtering. Both metal and oxide targets of Cu and Y and BaF{sub 2} and BaCO{sub 3} targets have been investigated. Film composition was determined by RBS and AES analysis. Films grown using BaF{sub 2} show fluorine contamination, whereas the carbon concentration in films grown using BaCO{sub 3} is beneath the Auger detection limit. Superconducting films have been grown on SrTiO{sub 3} (T{sub co}=78K) and on Si with SiO{sub 2} or Y{sub 2}O{sub 3} buffer layers (T{sub co}=35K). (orig.).

  14. Interface between metallic film from Fe-Ni-C system and HPHT as-grown diamond single crystal

    Institute of Scientific and Technical Information of China (English)

    许斌; 李木森; 尹龙卫; 刘玉先; 崔建军; 宫建红

    2003-01-01

    Microstructures of surface layer (near diamond) of the metallic film from Fe-Ni-C system are composed of (Fe,Ni)3C, (Fe,Ni)23C6 and γ-(Fe,Ni), from which it can be assumed that graphite isn't directly catalyzed into diamond through the film and there exists a transition phase (Fe,Ni)3C that can decompose into diamond structure. AFM morphologies on the film/diamond interface are traces preserved after carbon groups moving from the film to diamond. The morphologies on the as-grown diamond are similar to those on corresponding films, being spherical on (100) face and sawtooth-like steps on (111) face. Diamond growth rates and temperature gradients in boundary layer of the molten film at HPHT result in morphology differences.

  15. Anisotropic magnetothermopower in ferromagnetic thin films grown on macroscopic substrates

    Energy Technology Data Exchange (ETDEWEB)

    Jayathilaka, P.B. [Department of Physical Sciences, Faculty of Applied Sciences, Rajarata University of Sri Lanka, Mihintale (Sri Lanka); Belyea, D.D. [Department of Physics, University of South Florida, 4202 East Fowler Avenue, Tampa, FL 33620 (United States); Fawcett, T.J. [College of Engineering, University of South Florida, 4202 East Fowler Avenue, Tampa, FL 33620 (United States); Miller, Casey W. [School of Chemistry and Materials Science, Rochester Institute of Technology, 85 Lomb Memorial Drive, Rochester, NY 14623 (United States)

    2015-05-15

    We report observing the anisotropic magnetothermopower in a variety of ferromagnetic thin films grown on macroscopic substrates. These measurements were enabled by eliminating spurious signals related to the Anomalous Nernst Effect by butt-mounting the sample to the heat source and sink, and appropriate positioning of electrical contacts to avoid unwanted thermal gradients. This protocol enabled detailed measurements of the magnetothermopower in the transverse and longitudinal configurations. This may enable Spin Seebeck Effect studies in the in-plane geometry. - Highlights: • Unintentional thermal gradients along surface normal mitigated via butt-mounting. • Longitudinal/transverse magnetothermopower measured on many systems. • Anomalous Nernst Effect reduced. • Importance of magnetic anisotropy identified with angle-dependent measurements.

  16. Nanostructures of Indium Gallium Nitride Crystals Grown on Carbon Nanotubes.

    Science.gov (United States)

    Park, Ji-Yeon; Man Song, Keun; Min, Yo-Sep; Choi, Chel-Jong; Seok Kim, Yoon; Lee, Sung-Nam

    2015-11-16

    Nanostructure (NS) InGaN crystals were grown on carbon nanotubes (CNTs) using metalorganic chemical vapor deposition. The NS-InGaN crystals, grown on a ~5-μm-long CNT/Si template, were estimated to be ~100-270 nm in size. Transmission electron microscope examinations revealed that single-crystalline InGaN NSs were formed with different crystal facets. The observed green (~500 nm) cathodoluminescence (CL) emission was consistent with the surface image of the NS-InGaN crystallites, indicating excellent optical properties of the InGaN NSs on CNTs. Moreover, the CL spectrum of InGaN NSs showed a broad emission band from 490 to 600 nm. Based on these results, we believe that InGaN NSs grown on CNTs could aid in overcoming the green gap in LED technologies.

  17. Films Composed Of Diamond And Diamondlike Carbon

    Science.gov (United States)

    Shing, Yuh-Han

    1995-01-01

    Proposed films composed of diamond and diamondlike carbon useful as wear-resistant and self-lubricating protective and tribological coats at extreme temperatures and in corrosive and oxidizing environments. Films have wide variety of industrial applications.

  18. Amorphous carbon buffer layers for separating free gallium nitride films

    Science.gov (United States)

    Altakhov, A. S.; Gorbunov, R. I.; Kasharina, L. A.; Latyshev, F. E.; Tarala, V. A.; Shreter, Yu. G.

    2016-11-01

    The possibility of using amorphous diamond-like carbon (DLC) films for self-separation of gallium nitride (GaN) layers grown by hydride vapor-phase epitaxy has been analyzed. DLC films have been synthesized by plasma-enhanced chemical vapor deposition under low pressure on sapphire (Al2O3) substrates with a (0001) crystallographic orientation. The samples have been studied by the methods of Raman scattering and X-ray diffraction analysis. It is shown that thin DLC films affect only slightly the processes of nucleation and growth of gallium nitride films. Notably, the strength of the "GaN film-Al2O3" substrate interface decreases, which facilitates separation of the GaN layers.

  19. Characteristics of atomic layer deposition grown HfO{sub 2} films after exposure to plasma treatments

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Y.W. [Kookje Electric Korea Co. LTD, 4-2 Chaam-Dong, Chonan-Si, Chungcheongnam-Do (Korea, Republic of)]. E-mail: ywkim@kekorea.co.kr; Roh, Y. [School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Yoo, Ji-Beom [School of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)]. E-mail: jibyoo@skku.ac.kr; Kim, Hyoungsub [School of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

    2007-01-22

    Ultra thin HfO{sub 2} films were grown by the atomic layer deposition (ALD) technique using tetrakismethylethylaminohafnium (Hf[N(CH){sub 3}(C{sub 2}H{sub 5})]{sub 4}) and ozone (O{sub 3}) as the precursors and subsequently exposed to various plasma conditions, i.e., CCP (capacitively coupled plasma) and MMT (modified magnetron typed plasma) in N{sub 2} or N{sub 2}/O{sub 2} ambient. The conventional CCP treatment was not effective in removing the carbon impurities, which were incorporated during the ALD process, from the HfO{sub 2} films. However, according to the X-ray photoelectron spectroscopy measurements, the MMT treated films exhibited a significant reduction in their carbon contents and the efficient incorporation of nitrogen atoms. Although the incorporated nitrogen was easily released during the post-thermal annealing of the MMT treated samples, it was more effective than the CCP treatment in removing the film impurities. Consequently, the MMT treated samples exhibited excellent electrical properties as compared to the as-deposited HfO{sub 2} films, including negligible hysteresis (flatband voltage shift), a low leakage current, and the reduced equivalent oxide thickness of the gate stack. In conclusion, MMT post treatment is more effective than conventional CCP treatment in improving the electrical properties of high-k films by reducing the carbon contamination and densifying the as-deposited defective films.

  20. Ferromagnetism and increased ionicity in epitaxially grown TbMnO3 films

    NARCIS (Netherlands)

    Rubi, D.; de Graaf, C.; Daumont, C. J. M.; Mannix, D.; Broer, R; Noheda, B

    2009-01-01

    Thin films of TbMnO3 have been grown on SrTiO3 substrates. The films grow under compressive strain and are only partially clamped to the substrate. This produces remarkable changes in the magnetic properties and, unlike the bulk material, the films display ferromagnetic interactions below the orderi

  1. Aligned carbon nanotube, graphene and graphite oxide thin films via substrate-directed rapid interfacial deposition.

    Science.gov (United States)

    D'Arcy, Julio M; Tran, Henry D; Stieg, Adam Z; Gimzewski, James K; Kaner, Richard B

    2012-05-21

    A procedure for depositing thin films of carbon nanostructures is described that overcomes the limitations typically associated with solution based methods. Transparent and conductively continuous carbon coatings can be grown on virtually any type of substrate within seconds. Interfacial surface tension gradients result in directional fluid flow and film spreading at the water/oil interface. Transparent films of carbon nanostructures are produced including aligned ropes of single-walled carbon nanotubes and assemblies of single sheets of chemically converted graphene and graphite oxide. Process scale-up, layer-by-layer deposition, and a simple method for coating non-activated hydrophobic surfaces are demonstrated.

  2. Optical characterization of sputtered carbon films

    Energy Technology Data Exchange (ETDEWEB)

    Ager, J.W. III.

    1992-05-01

    Spattered carbon films are widely used as protective overcoats for thin film disk media. Raman spectroscopy is nondestructive and relatively rapid and is well suited for the characterization of carbon films. Specific features in the Raman spectra are empirically correlated with the rates of specific types of mechanical wear for both hydrogenated and unhydrogenated films. This observation is interpreted in terms of a random covalent network, in which the mechanical performance of the film is determined by the nature of the bonding that links sp{sup 2}-bonded domains.

  3. Photoresponse properties of BaSi2 film grown on Si (100) by vacuum evaporation

    Science.gov (United States)

    Thi Trinh, Cham; Nakagawa, Yoshihiko; Hara, Kosuke O.; Takabe, Ryota; Suemasu, Takashi; Usami, Noritaka

    2016-07-01

    We have succeeded in the observation of high photoresponsivity of orthorhombic BaSi2 film grown on crystalline Si by a vacuum evaporation method, raising the prospect of its promising application in high-efficiency thin-film solar cells. Photocurrent was observed at photon energies larger than 1.28 eV, which corresponds to the band gap of evaporated BaSi2 film, indicating that the photoresponsivity originates from the BaSi2 film. The effect of the substrate temperature on the film’s properties was also investigated. The films grown at a substrate temperature larger than 500 °C are single-phase polycrystalline BaSi2 films, while those grown at a substrate temperature of 400 °C is a mixture of phases. We confirmed that undoped evaporated BaSi2 films are an n-type material with high carrier concentration. High carrier lifetime of 4.8 and 2.7 μs can be found for the films grown at 500 °C and 400 °C, respectively. BaSi2 film grown at a substrate temperature of 500 °C, which is crack-free and single-phase, shows the best photoresponsivity. The maximum value of photocurrent was obtained at photon energy of 1.9 eV, corresponding to an external quantum efficiency of 22% under reverse applied voltage of 2 V.

  4. Anisotropies in magnetron sputtered carbon nitride thin films

    Science.gov (United States)

    Hellgren, Niklas; Johansson, Mats P.; Broitman, Esteban; Hultman, Lars; Sundgren, Jan-Eric

    2001-04-01

    Carbon nitride CNx (0⩽x⩽0.35) thin films, deposited by reactive dc magnetron sputtering in Ar/N2 discharges have been studied with respect to microstructure using electron microscopy, and elastic modulus using nanoindentation and surface acoustic wave analyses. For growth temperature of 100 °C, the films were amorphous, and with an isotropic Young's modulus of ˜170-200 GPa essentially unaffected by the nitrogen fraction. The films grown at elevated temperatures (350-550 °C) show anisotropic mechanical properties due to a textured microstructure with standing basal planes, as observed from measuring the Young's modulus in different directions. The modulus measured in the plane of the film was ˜60-80 GPa, while in the vertical direction the modulus increased considerably from ˜25 to ˜200 GPa as the nitrogen content was increased above ˜15 at. %.

  5. Transport properties of polymer-vapour grown carbon fibre composites

    Science.gov (United States)

    Gordeyev, S. A.; Macedo, F. J.; Ferreira, J. A.; van Hattum, F. W. J.; Bernardo, C. A.

    2000-04-01

    DC electrical resistivity and thermal conductivity of polypropylene (PP) filled with vapour grown carbon fibre (VGCF) was studied. This was done for a wide range of fibre content and compared to systems produced under the same conditions in which a conventional carbon fibre was used as filler. The composites studied exhibit characteristic percolating behaviour. Because of the low degree of graphite perfection in the VGCF used in this work, the fraction of VGCF required to achieve percolation was higher than expected. Non-linear I- V characteristics and time dependent electrical resistivity effects are only observed in PP filled with VGCF. Several mechanisms must be called upon to explain the observed electrical behaviour of the PP/VGCF composite. The thermal conductivity of the composites is in agreement with the effective medium theories.

  6. Effect of substrate temperature on the structure of amorphous oxygenated hydrocarbon films grown with a pulsed supersonic methane plasma flow

    Science.gov (United States)

    Fedoseeva, Yu. V.; Pozdnyakov, G. A.; Okotrub, A. V.; Kanygin, M. A.; Nastaushev, Yu. V.; Vilkov, O. Y.; Bulusheva, L. G.

    2016-11-01

    Since amorphous oxygenated hydrocarbon (COxHy) films are promising engineering materials a study of the structure and composition of the films depending on the conditions of synthesis is important for controlling of their physicochemical properties. Here, we used the methods of scanning and transmission electron microscopy, X-ray photoelectron, near-edge X-ray absorption fine structure, Fourier transform infrared and Raman spectroscopy to reveal changes in the chemical connectivity of COxHy films grown on silicon substrates heated to 300, 500, and 700 °C using a supersonic flow of methane plasma. It was found that the COxHy films, deposited at 300 and 500 °C, were mainly composed of the sp2-hybridized carbon areas with various oxygen species. A rise of the substrate temperature caused an increase of the portion of tetrahedral carbon atoms as well as carboxyl and hydroxyl groups. With growth of the substrate temperature, the film thickness reduced monotonically from 400 to 180 nm, while the film adhesion improved substantially. The films, deposited at lower temperatures, showed high hydrophilicity due to porosity and presence of oxygenated groups both at the surface and in the bulk.

  7. Micro-porous TiO2 thin films grown on surface of Ti substrate

    Institute of Scientific and Technical Information of China (English)

    WU Xiao-hong; QIN Wei; JIANG Zhao-hua; HU Xin-guo; Li Qing-fen

    2004-01-01

    Microporous titanium dioxide thin films have been grown on titanium plates by the micro-plasma oxidation method with different current densities (4, 6, 10 and 14 A/dm2). X-ray diffraction, scanning electronic microscopy and UV-Vis spectrophotometry were used to characterize the films. It is found that the films grown are microporous and consist of crystalline titanium dioxide. The micropore size and the content of anatase and rutile TiO2 phase increase with the applied voltage. The relatively higher degradation efficiency for rhodamine B is obtained in the film produced with a current density of 10 A/dm2.

  8. Structural and optical properties of ZnS thin film grown by pulsed electrodeposition

    Energy Technology Data Exchange (ETDEWEB)

    Hennayaka, H.M.M.N.; Lee, Ho Seong, E-mail: hs.lee@knu.ac.kr

    2013-12-02

    ZnS thin films were grown on indium–tin-oxide coated glass substrates using pulsed electrodeposition and the effect of the deposition temperature on the structural and optical properties of the ZnS films was investigated. Polycrystalline cubic ZnS films were obtained at all the deposition temperatures. At temperatures below 70 °C, less dense films were obtained and particle agglomeration was visible. On the other hand, at temperatures above 70 °C, more dense films with well-defined grains were obtained. With increasing deposition temperatures, the optical transmittance and bandgap of the ZnS films decreased. These results are attributed to the increase in the thickness of ZnS films and their particle size. The ZnS films grown at 90 °C exhibited the highly (200) preferred orientation and n-type conductivity with a wide bandgap of 3.75 eV. - Highlights: • This study describes the effect of the deposition temperature on the growth of the ZnS thin films. • ZnS thin films were grown using pulsed electrodeposition. • ZnS thin films exhibited the good crystal quality and chemical composition. • ZnS thin films exhibited n-type conductivity with a wide bandgap of 3.75 eV.

  9. Room temperature direct band gap emission characteristics of surfactant mediated grown compressively strained Ge films

    Science.gov (United States)

    Katiyar, Ajit K.; Grimm, Andreas; Bar, R.; Schmidt, Jan; Wietler, Tobias; Joerg Osten, H.; Ray, Samit K.

    2016-10-01

    Compressively strained Ge films have been grown on relaxed Si0.45Ge0.55 virtual substrates using molecular beam epitaxy in the presence of Sb as a surfactant. Structural characterization has shown that films grown in the presence of surfactant exhibit very smooth surfaces with a relatively higher strain value in comparison to those grown without any surfactant. The variation of strain with increasing Ge layer thickness was analyzed using Raman spectroscopy. The strain is found to be reduced with increasing film thickness due to the onset of island nucleation following Stranski-Krastanov growth mechanism. No phonon assisted direct band gap photoluminescence from compressively strained Ge films grown on relaxed Si0.45Ge0.55 has been achieved up to room temperature. Excitation power and temperature dependent photoluminescence have been studied in details to investigate the origin of different emission sub-bands.

  10. Bond strength of individual carbon nanotubes grown directly on carbon fibers

    Science.gov (United States)

    Kim, Kyoung Ju; Lee, Geunsung; Kim, Sung-Dae; Kim, Seong-Il; Youk, Ji Ho; Lee, Jinyong; Kim, Young-Woon; Yu, Woong-Ryeol

    2016-10-01

    The performance of carbon nanotube (CNT)-based devices strongly depends on the adhesion of CNTs to the substrate on which they were directly grown. We report on the bond strength of CNTs grown on a carbon fiber (T700SC Toray), measured via in situ pulling of individual CNTs inside a transmission electron microscope. The bond strength of an individual CNT, obtained from the measured pulling force and CNT cross-section, was very high (˜200 MPa), 8-10 times higher than that of an adhesion model assuming only van der Waals interactions (25 MPa), presumably due to carbon-carbon interactions between the CNT (its bottom atoms) and the carbon substrate.

  11. Bond strength of individual carbon nanotubes grown directly on carbon fibers.

    Science.gov (United States)

    Kim, Kyoung Ju; Lee, Geunsung; Kim, Sung-Dae; Kim, Seong-Il; Youk, Ji Ho; Lee, Jinyong; Kim, Young-Woon; Yu, Woong-Ryeol

    2016-10-07

    The performance of carbon nanotube (CNT)-based devices strongly depends on the adhesion of CNTs to the substrate on which they were directly grown. We report on the bond strength of CNTs grown on a carbon fiber (T700SC Toray), measured via in situ pulling of individual CNTs inside a transmission electron microscope. The bond strength of an individual CNT, obtained from the measured pulling force and CNT cross-section, was very high (∼200 MPa), 8-10 times higher than that of an adhesion model assuming only van der Waals interactions (25 MPa), presumably due to carbon-carbon interactions between the CNT (its bottom atoms) and the carbon substrate.

  12. Investiagtion of Nanoscale Carbon Nitride Thin Films Grown Using DC HCD Hollow Cathode Discharge%用直流中空阴极放电方法(DC HCD)生长的纳米级碳的氮化物薄膜研究

    Institute of Scientific and Technical Information of China (English)

    YAN Y.H.; SHI Y.C.; YANG P.; TANG X.L.; FENG P.X.

    2005-01-01

    There is growing interest in the underlying physical processes in optoelectronic devices based on thin-film multilayer structures. Recently, many investigators have made great efforts on synthesizing the ultra - hard nanoscale carbon nitride thin films. Considering low cost and simple configuration, we used DC hollow cathode discharge (HCD) for deposition of nanoscale carbon nitride thin films.

  13. Intrinsic stress analysis of sputtered carbon film

    Institute of Scientific and Technical Information of China (English)

    Liqin Liu; Zhanshan Wang; Jingtao Zhu; Zhong Zhang; Moyan Tan; Qiushi Huang; Rui Chen; Jing Xu; Lingyan Chen

    2008-01-01

    Intrinsic stresses of carbon films deposited by direct current (DC) magnetron sputtering were investigated.The bombardments of energetic particles during the growth of films were considered to be the main reason for compressive intrinsic stresses.The values of intrinsic stresses were determined by measuring the radius of curvature of substrates before and after film deposition.By varying argon pressure and target-substrate distance,energies of neutral carbon atoms impinging on the growing films were optimized to control the intrinsic stresses level.The stress evolution in carbon films as a function of film thickness was investigated and a void-related stress relief mechanism was proposed to interpret this evolution.

  14. Effect of substrate temperature on the structure of amorphous oxygenated hydrocarbon films grown with a pulsed supersonic methane plasma flow

    Energy Technology Data Exchange (ETDEWEB)

    Fedoseeva, Yu. V., E-mail: fedoseeva@niic.nsc.ru [Nikolaev Institute of Inorganic Chemistry SB RAS, Novosibirsk 630090 (Russian Federation); Novosibirsk State University, Novosibirsk 630090 (Russian Federation); Pozdnyakov, G.A. [Khristianovich Institute of Theoretical and Applied Mechanics, SB RAS, Novosibirsk 630090 (Russian Federation); Okotrub, A.V.; Kanygin, M.A. [Nikolaev Institute of Inorganic Chemistry SB RAS, Novosibirsk 630090 (Russian Federation); Novosibirsk State University, Novosibirsk 630090 (Russian Federation); Nastaushev, Yu. V. [Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk 630090 (Russian Federation); Vilkov, O.Y. [St. Petersburg State University, St. Petersburg 198504 (Russian Federation); Bulusheva, L.G. [Nikolaev Institute of Inorganic Chemistry SB RAS, Novosibirsk 630090 (Russian Federation); Novosibirsk State University, Novosibirsk 630090 (Russian Federation)

    2016-11-01

    Highlights: • A deposition of supersonic methane plasma flow on silicon substrate produces amorphous oxygenated hydrocarbon (CO{sub x}H{sub y}) film. • The thickness, composition, and wettability of the film depend on the substrate temperature. • A rise of the substrate temperature from 500 to 700 °C promotes the sp{sup 3}-hybridization carbon formation. - Abstract: Since amorphous oxygenated hydrocarbon (CO{sub x}H{sub y}) films are promising engineering materials a study of the structure and composition of the films depending on the conditions of synthesis is important for controlling of their physicochemical properties. Here, we used the methods of scanning and transmission electron microscopy, X-ray photoelectron, near-edge X-ray absorption fine structure, Fourier transform infrared and Raman spectroscopy to reveal changes in the chemical connectivity of CO{sub x}H{sub y} films grown on silicon substrates heated to 300, 500, and 700 °C using a supersonic flow of methane plasma. It was found that the CO{sub x}H{sub y} films, deposited at 300 and 500 °C, were mainly composed of the sp{sup 2}-hybridized carbon areas with various oxygen species. A rise of the substrate temperature caused an increase of the portion of tetrahedral carbon atoms as well as carboxyl and hydroxyl groups. With growth of the substrate temperature, the film thickness reduced monotonically from 400 to 180 nm, while the film adhesion improved substantially. The films, deposited at lower temperatures, showed high hydrophilicity due to porosity and presence of oxygenated groups both at the surface and in the bulk.

  15. Surface morphologies of MOCVD-grown GaN films on sapphire studied by scanning tunneling microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, J.; Reddic, J.E.; Sinha, M.; Ricker, W.S.; Karlinsey, J.; Yang, J.-W.; Khan, M.A.; Chen, D.A

    2002-12-30

    The surface morphologies of MOCVD GaN films grown on sapphire substrates have been investigated by scanning tunneling microscopy (STM). High quality STM images could not be obtained prior to cleaning the les in HF, hot HCl or 2 M NaOH. STM images of the GaN films showed that the surfaces consisted of curved step edges and interlocking terraces, which were roughly 224 nm wide. Surface pits approximately 2-5 nm deep and 50-80 nm wide were observed on the GaN films, and these pits were preferentially located at a juncture between two step edges. Previous studies in the literature involving MOCVD-grown GaN on sapphire have demonstrated that the surface pits are associated with screw-component threading dislocations. Therefore, the number of screw-component threading dislocations in these GaN films is estimated as 6.3x10{sup 8} cm{sup -2} from the number surface pits observed in the STM images. X-ray photoelectron studies indicated that the major surface contaminants before cleaning were carbon and oxygen. Treatment in HF or HCl removed oxygen from the surface while treatment in NaOH was more effective at removing surface carbon.

  16. Piezoresistive effect in carbon nanotube films

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    The piezoresistive effect of the pristine carbon nanotube (CNT) films has been studied. Carbon nanotubes were synthesized by hot filament chemical vapor deposition. The piezoresistive effect in the pristine CNT films was studied by a three-point bending test. The gauge factor for the pristine CNT films under 500 microstrains was found to be at least 65 at room temperature, and increased with temperature, exceeding that of polycrystalline silicon (30) at 35℃. The origin of the piezoresistivity in CNT films may be ascribed to a pressure-induced change in the band gap and the defects.

  17. Carbon nanotube based transparent conductive thin films.

    Science.gov (United States)

    Yu, X; Rajamani, R; Stelson, K A; Cui, T

    2006-07-01

    Carbon nanotube (CNT) based optically transparent and electrically conductive thin films are fabricated on plastic substrates in this study. Single-walled carbon nanotubes (SWNTs) are chemically treated with a mixture of concentrated sulfuric acid and nitric acid before being dispersed in aqueous surfactant-contained solutions. SWNT thin films are prepared from the stable SWNT solutions using wet coating techniques. The 100 nm thick SWNT thin film exhibits a surface resistivity of 6 kohms/square nanometer with an average transmittance of 88% on the visible light range, which is three times better than the films prepared from the high purity as-received SWNTs.

  18. Diamond films grown without seeding treatment and bias by hot-filament CVD system

    Science.gov (United States)

    Ali, M.; Ürgen, M.

    2012-04-01

    Diamond film growth without seeding treatment has been the subject of numerous studies. In the present study, diamond films with/without seeding treatment were grown on silicon using hot-filament chemical vapour deposition. An inexpensive and simple approach, namely, "dry ultrasonic treatment", was introduced in which full coverage of diamond film was achieved on unseeded substrate. For comparison, one substrate was seeded with 5 μm diamond particles, prior to deposition. The resulting diamond films were examined through standard characterization tools and distinct features were observed in each film. Here we present the results of uniform and high purity diamond film, free from nano-sized grains, which is grown without seeding treatment and is expected to be potential candidate for electro-optical applications, particularly as heat sinks.

  19. Mechanoresponses of human primary osteoblasts grown on carbon nanotubes.

    Science.gov (United States)

    Kroustalli, A; Kotsikoris, V; Karamitri, A; Topouzis, S; Deligianni, D

    2015-03-01

    Bone mechanotransduction is strongly influenced by the biomaterial properties. A good understanding of these mechanosensory mechanisms in bone has the potential to provide new strategies in the highly evolving field of bone tissue engineering. The aim of the present investigation was to study the interactive effects of local mechanical stimuli on multiwalled carbon nanotubes (MWCNTs)/osteoblast interface, using an in vitro model that allows the study of cell growth, attachment and differentiation. Strain was applied at physiological levels [strain magnitudes 500 microstrain (μɛ), at frequency of load application 0.5 Hz]. The effect of mechanical strain and substrate was thus studied by measuring the messenger RNA expression of alkaline phosphatase, vinculin, collagen 1A, and integrins β1, β3, α4, and αv, using real-time quantitative polymerase chain reaction. The osteoblasts grown on MWCNTs displayed quick adaptation to the new environment by modulating the expression of key adhesion integrins. Furthermore, the addition of mechanical strain interplayed with the extracellular matrix and was efficiently transduced by cells grown on MWCNTs, providing stronger adhesion and survival. MWCNTs are therefore a material perfectly compatible with osteoblast differentiation, adhesion, and growth, and should be further evaluated, to derive new-generation biomaterial scaffolds for the treatment of skeletal defects which require bone reconstruction.

  20. Effective annealing of ZnO thin films grown by three different SILAR processes

    OpenAIRE

    2015-01-01

    In the present work, zinc oxide (ZnO) thin films have been grown three different cation solution on glass substrates by a simple and economic successive ionic layer absorption and reaction method (SILAR). One of each grown different solution films was annealed to investigate to effective annealing at 473 K for 30 minutes. Absorption measurements showed that the optical band-gaps of all ZnO thin films were wide and were about 3.08-3.31 eV. All films’ band gap increased with annealing. Energy-D...

  1. Electrical properties of ZnO thin films grown by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Pagni, O. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Somhlahlo, N.N. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Weichsel, C. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Leitch, A.W.R. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa)]. E-mail: andrew.leitch@nmmu.ac.za

    2006-04-01

    We report on the electrical characterization of ZnO films grown by MOCVD on glass and sapphire substrates. After correcting our temperature variable Hall measurements by applying the standard two-layer model, which takes into account an interfacial layer, scattering mechanisms in the ZnO films were studied as well as donor activation energies determined. ZnO films grown at different oxygen partial pressures indicated the importance of growth conditions on the defect structure by means of their conductivities and conductivity activation energies.

  2. Piezoresistive Sensors Based on Carbon Nanotube Films

    Institute of Scientific and Technical Information of China (English)

    L(U) Jian-wei; WANG Wan-lu; LIAO Ke-jun; WANG Yong-tian; LIU CHang-lin; Zeng Qing-gao

    2005-01-01

    Piezoresistive effect of carbon nanotube films was investigated by a three-point bending test.Carbon nanotubes were synthesized by hot filament chemical vapor deposition.The experimental results showed that the carbon nanotubes have a striking piezoresistive effect.The relative resistance was changed from 0 to 10.5×10-2 and 3.25×10-2 for doped and undoped films respectively at room temperature when the microstrain under stress from 0 to 500. The gauge factors for doped and undoped carbon nanotube films under 500 microstrain were about 220 and 67 at room temperature, respectively, exceeding that of polycrystalline silicon (30) at 35℃.The origin of the resistance changes in the films may be attributed to a strain-induced change in the band gap for the doped tubes and the defects for the undoped tubes.

  3. Preparation of composite electroheat carbon film

    Institute of Scientific and Technical Information of China (English)

    XIA Jin-tong; TU Chuan-jun; LI Yan; HU Li-min; DENG Jiu-hua

    2005-01-01

    A kind of conductive and heating unit, which can reach a high surface electroheat temperature at a low voltage, was developed in view of the traditional electroheat coating which has a low surface electroheat temperature and an insufficient heat resistance of its binder. The coating molded electroheat carbon film(CMECF) was prepared by carbonizing the coating which was prepared by adding modified resin into flake graphite and carbon fiber, coating molded onto the surface of the heat resisting matrix after dried, while the hot pressing molded electroheat thick carbon film(HPMETCF) was prepared by carbonizing the bodies whose powders were hot pressing molded directly.The surface and inner microstructure of the carbon film was characterized and analyzed by SEM and DSC/TG, while electroheat property was tested by voltage-current volume resistivity tester and electrical parameter tester. The results show that, close-packed carbon network configuration is formed within the composite electroheat carbon film film after anti-oxidizable treatment reaches a higher surface electroheat temperature than that of the existing electroheat coatings at a low voltage, and has excellent electroheat property, high thermal efficiency as well as stable physicochemical property. It is found that, at room temperature(19± 2 ℃) and 22 V for 5 min, the surface electroheat temperature of the self-produced CMECF (mfiller/mresin = 1. 8/1) reaches 112 ℃ while HPMETCF (mfiller/mresin = 3. 6/1) reaches 265 ℃.

  4. Influence of Annealing on Properties of ZnO Films Grown via Plasma-enhanced MOCVD

    Institute of Scientific and Technical Information of China (English)

    ZHAO Bai-jun; LIU Da-li; LI Wan-cheng; FANG Xiu-jun; DU Guo-tong; YANG Hong-jun; WANG Jinz-hong; ZHANG Yuan-tao; YANG Xiao-tian; LIU Bo-yang; MA Yan; YANG Tian-peng

    2003-01-01

    The structural and the optical properties of ZnO films with high quality grown via plasma-enhanced metal-organic chemical vapour deposition(MOCVD) on C-plane sapphire substrate were studied. The crystallinity and the optical properties of the films are greatly improved having been annealed in oxygen plasma atmosphere. The structure, the band gap and the binding energy of O1s electrons, and the molar ratio of O to Zn were determined by X-ray diffraction(XRD), photoluminescence(PL) and X-ray photoelectron scan methods. For both the annealed and the as-grown films, the exciton peak features were observed at room temperature. The band-edge photoluminescence of the annealed film is much stronger than that of the as-grown film, and the exciton peak relating to the deep level at 439 nm disappears. The molar ratio of O to Zn in the annealed film is 0.91, while it is 0.78 for the as-grown film.

  5. Single-crystal semiconductor films grown on foreign substrates

    Science.gov (United States)

    Vohl, P.

    1966-01-01

    Intermediate alloy formed between foreign substrates and semiconductor material enable the growth of single crystal semiconductor films on the alloy layer. The melted film must not ball up on the surface of the substrate and neither chemically react nor alloy with the intermediate alloy formed on the substrate.

  6. A Comparison between AlN Films Grown by MOCVD Using Dimethylethylamine Alane and Trimethylaluminium as the Aluminium Precursors

    Institute of Scientific and Technical Information of China (English)

    HU Wei-Guo; PAN Yi; LIU Xiang-Lin; ZHANG Pan-Feng; ZHAO Feng-Ai; JIAO Chun-Mei; WEI Hong-Yuan; ZHANG Ri-Qing; WU Jie-Jun; CONG Guang-Wei

    2007-01-01

    Aluminium nitride (AlN) films grown with dimethylethylamine alane (DMEAA) are compared with the ones grown with trimethylaluminium (TMA). In the high-resolution x-ray diffraction Ω scans, the full width at half maximum (FWHM) of (0002) AlN films grown with DMEAA is about 0.70 deg, while the FWHM of (0002)AlN films grown with TMA is only 0.11 deg. The surface morphologies of the films are different, and the rms roughnesses of the surface are approximately identical. The rms roughness of AlN films grown with DMEAA is 47.4 nm, and grown with TMA is 69.4 nm. Although using DMEAA as the aluminium precursor cannot improve the AlN crystal quality, AlN growth can be reached at low temperature of 673 K. Thus, DMEAA is an alternative aluminium precursor to deposit AlN film at low growth temperatures.

  7. Effect of surface treatment on hot-filament chemical vapour deposition grown diamond films

    Science.gov (United States)

    Ali, M.; Ürgen, M.; Atta, M. A.

    2012-02-01

    Diamond film growth without seeding treatment has been the subject of numerous studies. In this study, diamond films with/without seeding treatment were grown on silicon using hot-filament chemical vapour deposition. An inexpensive and simple approach, namely ‘dry ultrasonic treatment’, was introduced in which full coverage of the diamond film was achieved over the substrate having no prior seeding treatment. For comparison purposes, two substrates were seeded with different sizes of diamond particles, 5 µm by hand and 30-40 µm by ultrasonic agitation, prior to deposition. The produced diamond films were examined through standard characterization tools and distinct features were observed in each film. The diamond film grown without the seeding treatment shows slightly lower growth rate (1 µm h-1) but bigger grain size up to 8 µm compared with seeded films. Here we show the growth of uniform and high-purity diamond films free from nano-sized grains, which are grown without any seeding treatment.

  8. SnO{sub 2} thin films grown by atomic layer deposition using a novel Sn precursor

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Min-Jung [Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul, 136-791 (Korea, Republic of); Department of Materials Science and Engineering, Yonsei University, Seoul, 120-749 (Korea, Republic of); Cho, Cheol Jin [Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul, 136-791 (Korea, Republic of); Department of Materials Science and Engineering, Seoul National University, Seoul, 151-744 (Korea, Republic of); Kim, Kwang-Chon; Pyeon, Jung Joon [Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul, 136-791 (Korea, Republic of); Park, Hyung-Ho [Department of Materials Science and Engineering, Yonsei University, Seoul, 120-749 (Korea, Republic of); Kim, Hyo-Suk; Han, Jeong Hwan; Kim, Chang Gyoun; Chung, Taek-Mo [Division of Advanced Materials, Korea Research Institute of Chemical Technology (KRICT), Daejeon, 305-600 (Korea, Republic of); Park, Tae Joo [Department of Materials Science and Engineering, Hanyang University, Ansan, 426-791 (Korea, Republic of); Kwon, Beomjin [Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul, 136-791 (Korea, Republic of); Jeong, Doo Seok; Baek, Seung-Hyub [Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul, 136-791 (Korea, Republic of); Department of Nanomaterials, Korea University of Science and Technology, Daejeon, 305-333 (Korea, Republic of); Kang, Chong-Yun; Kim, Jin-Sang [Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul, 136-791 (Korea, Republic of); Kim, Seong Keun, E-mail: s.k.kim@kist.re.kr [Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul, 136-791 (Korea, Republic of); Department of Nanomaterials, Korea University of Science and Technology, Daejeon, 305-333 (Korea, Republic of)

    2014-11-30

    Highlights: • We developed a new ALD process for SnO{sub 2} films using dimethylamino-2-methyl-2-propoxy-tin(II) as a novel Sn precursor. • The SnO{sub 2} films grown from Sn(dmamp){sub 2} has negligible impurity contents. • Sn ions in the films had a single binding state corresponding to Sn{sup 4+} in SnO{sub 2}. - Abstract: SnO{sub 2} thin films were grown by atomic layer deposition (ALD) with dimethylamino-2-methyl-2-propoxy-tin(II) (Sn(dmamp){sub 2}) and O{sub 3} in a temperature range of 100–230 °C. The ALD window was found to be in the range of 100–200 °C. The growth per cycle of the films in the ALD window increased with temperature in the range from 0.018 to 0.042 nm/cycle. Above 230 °C, the self-limiting behavior which is a unique characteristic of ALD, was not observed in the growth because of the thermal decomposition of the Sn(dmamp){sub 2} precursor. The SnO{sub 2} films were amorphous in the ALD window and exhibited quite a smooth surface. Sn ions in all films had a single binding state corresponding to Sn{sup 4+} in SnO{sub 2}. The concentration of carbon and nitrogen in the all SnO{sub 2} films was below the detection limit of the auger electron spectroscopy technique and a very small amount of carbon, nitrogen, and hydrogen was detected by secondary ions mass spectroscopy only. The impurity contents decreased with increasing the growth temperature. This is consistent with the increase in the density of the SnO{sub 2} films with respect to the growth temperature. The ALD process with Sn(dmamp){sub 2} and O{sub 3} shows excellent conformality on a hole structure with an aspect ratio of ∼9. This demonstrates that the ALD process with Sn(dmamp){sub 2} and O{sub 3} is promising for growth of robust and highly pure SnO{sub 2} films.

  9. Epitaxial thin films grown by pulsed laser deposition

    NARCIS (Netherlands)

    Blank, D.H.A.

    2005-01-01

    In this paper, we present the pulsed laser deposition (PLD) technique to control the growth of metal oxide materials at atomic level using high-pressure reflective high-energy electron diffraction and ellipsometry. These developments have helped to make PLD a grown-up technique to fabricate complex

  10. Phase transition of bismuth telluride thin films grown by MBE

    DEFF Research Database (Denmark)

    Fülöp, Attila; Song, Yuxin; Charpentier, Sophie

    2014-01-01

    A previously unreported phase transition between Bi2Te3 and Bi4Te3 in bismuth telluride grown by molecular beam epitaxy is recorded via XRD, AFM, and SIMS observations. This transition is found to be related to the Te/Bi beam equivalent pressure (BEP) ratio. BEP ratios below 17 favor the formation...

  11. Raman analyses of residual stress in diamond thin films grown on Ti6Al4V alloy

    Directory of Open Access Journals (Sweden)

    Adriana F. Azevedo

    2003-01-01

    Full Text Available The stress evolution in diamond films grown on Ti6Al4V was investigated in order to develop a comprehensive view of the residual stress formation. Residual stress is composed of intrinsic stress induced during diamond film growth and extrinsic stress caused by the different thermal expansion coefficients between the film and substrate. In the coalescence stage it has been observed that the residual stress is dominated by the microstructure, whereas on continuous films, the thermal stress is more important. In this work diamond thin films with small grain size and good size and good quality were obtained in a surface wave-guide microwave discharge, the Surfatron system, with a negative bias voltage applied between the plasma shell and substrate. For above of -100V applied bias, the ratio of carbon sp³/sp² bond may increase and the nucleation rate increase arising the high value at the -250V applied bias. Stress measurements and sp³ content in the film were studied by Raman scattering spectroscopy. The total residual stress is compressive and varied from -1.52 to -1.48 GPa between 0 and -200 V applied bias, respectively, and above the -200 V, the compressive residual stress increased drastically to -1.80 GPa. The diamond nucleation density was evaluated by top view SEM images.

  12. Growth and atomic structure of tellurium thin films grown on Bi2Te3

    Science.gov (United States)

    Okuyama, Yuma; Sugiyama, Yuya; Ideta, Shin-ichiro; Tanaka, Kiyohisa; Hirahara, Toru

    2017-03-01

    We have grown tellurium (Te) thin films on Bi2Te3 and investigated the atomic structure. From low-energy electron diffraction (LEED) measurements, we found that the Te films are [10 1 bar0]-oriented with six domains. A detailed analysis of the reflection high-energy electron diffraction (RHEED) pattern revealed that the films are strained with the in-plane lattice constant compressed by ∼1.5% compared to the bulk value due to the epitaxy between Te and Bi2Te3. These films will be interesting systems to investigate the predicted topological phases that occur in strained Te.

  13. Coaxial carbon plasma gun deposition of amorphous carbon films

    Science.gov (United States)

    Sater, D. M.; Gulino, D. A.; Rutledge, S. K.

    1984-01-01

    A unique plasma gun employing coaxial carbon electrodes was used in an attempt to deposit thin films of amorphous diamond-like carbon. A number of different structural, compositional, and electrical characterization techniques were used to characterize these films. These included scanning electron microscopy, scanning transmission electron microscopy, X ray diffraction and absorption, spectrographic analysis, energy dispersive spectroscopy, and selected area electron diffraction. Optical absorption and electrical resistivity measurements were also performed. The films were determined to be primarily amorphous, with poor adhesion to fused silica substrates. Many inclusions of particulates were found to be present as well. Analysis of these particulates revealed the presence of trace impurities, such as Fe and Cu, which were also found in the graphite electrode material. The electrodes were the source of these impurities. No evidence of diamond-like crystallite structure was found in any of the film samples. Details of the apparatus, experimental procedure, and film characteristics are presented.

  14. Property modulation of NiO films grown by radio frequency magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Chen, T.F.; Wang, A.J.; Shang, B.Y. [Department of Physics, Beijing Normal University, Beijing 100875 (China); Wu, Z.L.; Li, Y.L. [Analytical and Testing Center, Beijing Normal University, Beijing 100875 (China); Wang, Y.S., E-mail: yswang@bnu.edu.cn [Department of Physics, Beijing Normal University, Beijing 100875 (China)

    2015-09-15

    Highlights: • Controllable and preferential growth of NiO films were performed successfully on Si substrates. • Oxygen partial pressure lower than 6% is crucial for transformation of the preferential growth. • The film deposition rate is very sensitive to the low oxygen partial pressure. • NiO lattice expands quadratically with the increasing of oxygen partial pressures. • The films contain high concentration of Ni vacancies and show a good rectifying behavior with p-Si. - Abstract: NiO films were grown on Si substrates by radio frequency magnetron sputtering. The films were analyzed by an X-ray diffractometer, scanning electron microscope, X-ray photoelectron spectroscopy and SCS-4200 semiconductor characterization system. Evolution of the growth mode, lattice strain, morphology, chemistry states and electrical properties were investigated systematically. The film deposition rates and properties are very sensitive to the oxygen partial pressure lower than 10%. It is crucial to decrease the oxygen partial pressure to 2% for (1 1 1) film growth and the films would transform from (1 1 1) to (1 0 0) as the oxygen partial pressure increases from 2% to 6%. The film lattice expands quadratically with the increase of oxygen partial pressure. Nickel vacancy concentration in (1 1 1) films is much higher than that in (1 0 0) films. All (1 0 0) films show good rectifying behavior with p-Si. The film growth modes and properties could be modulated flexibly by controlling the oxygen partial pressures.

  15. Morphology and photoresponse of crystalline antimony film grown on mica by physical vapor deposition

    Directory of Open Access Journals (Sweden)

    Shafa Muhammad

    2016-09-01

    Full Text Available Antimony is a promising material for the fabrication of photodetectors. This study deals with the growth of a photosensitive thin film by the physical vapor deposition (PVD of antimony onto mica surface in a furnace tube. The geometry of the grown structures was studied via scanning electron microscopy (SEM, X-ray diffraction (XRD, energy-dispersive X-ray spectroscopy (EDX and elemental diffraction analysis. XRD peaks of the antimony film grown on mica mostly matched with JCPDF Card. The formation of rhombohedral crystal structures in the film was further confirmed by SEM micrographs and chemical composition analysis. The Hall measurements revealed good electrical conductivity of the film with bulk carrier concentration of the order of 1022 Ω·cm-3 and mobility of 9.034 cm2/Vs. The grown film was successfully tested for radiation detection. The photoresponse of the film was evaluated using its current-voltage characteristics. These investigations revealed that the photosensitivity of the antimony film was 20 times higher than that of crystalline germanium.

  16. Carbon films produced from ionic liquid carbon precursors

    Science.gov (United States)

    Dai, Sheng; Luo, Huimin; Lee, Je Seung

    2013-11-05

    The invention is directed to a method for producing a film of porous carbon, the method comprising carbonizing a film of an ionic liquid, wherein the ionic liquid has the general formula (X.sup.+a).sub.x(Y.sup.-b).sub.y, wherein the variables a and b are, independently, non-zero integers, and the subscript variables x and y are, independently, non-zero integers, such that ax=by, and at least one of X.sup.+ and Y.sup.- possesses at least one carbon-nitrogen unsaturated bond. The invention is also directed to a composition comprising a porous carbon film possessing a nitrogen content of at least 10 atom %.

  17. Studies on electrochemically grown Cd-Fe-Se thin films

    Energy Technology Data Exchange (ETDEWEB)

    Mahalingam, T. [Alagappa Univ., Karaikudi (India). Dept. of Physics; Ajou Univ., Suwon (Korea, Republic of). Dept. of Electrical and Computer Engineering; Thanikaikarasan, S.; Raja, M.; Sanjeeviraja, C. [Alagappa Univ., Karaikudi (India). Dept. of Physics; Lee, S.; Moon, H.; Kim, Y.D. [Ajou Univ., Suwon (Korea, Republic of). Dept. of Molecular Science and Technology; Sebastian, P.J. [CIE-UNAM, Temixco, Morelos (Mexico); Chipas Polytechnical Univ., Chipas (Mexico)

    2007-01-15

    This paper presented the results of a study that investigated the electrochemical, structural, compositional, morphological and photoelectrochemical properties of cadmium ferrous selenide (Cd-Fe-Se) semiconducting thin films electrodeposited onto conducted tin oxide (SnO{sub 2}) coated glass substrates at various cadmium sulfate concentrations in the deposition bath. Experimental details were provided along with results of typical cyclic voltammograms of Cd-Fe-Se thin film cathodically deposited from an acid solution containing CdSO{sub 4}, FeSO{sub 4} and SeO{sub 2} without any additives. Variations in film thickness were determined along with compositional analysis and morphological studies. Photoelectrochemical (PEC) solar cell studies were performed in a cell consisting of photoelectrode (Cd-Fe{sub S}e), a platinum counter electrode and a saturated dalomel reference electrode. A hot probe method identified the nature of the thin film to be n-type, while the structure was found to be hexagon for CdSe, tetragonal for {alpha}-FeSe and orthorhombic for FeSe{sub 2}. According to energy dispersive analysis of X-rays (EDAX), the stoichiometric values of Cd and Se are obtained at higher concentration of CdSO{sub 4}. The maximum concentration of CD{sup 2+} ions in the solution bath yielded thin films with smooth surfaces. 18 refs., 1 tab., 6 figs.

  18. Oxygen Ion Conductance in Epitaxially Grown Thin Film Electrolytes

    Energy Technology Data Exchange (ETDEWEB)

    Thevuthasan, Suntharampillai; Yu, Zhongqing; Kuchibhatla, Satyanarayana V N T; Saraf, Laxmikant V.; Marina, Olga A.; Shutthanandan, V.; Nachimuthu, Ponnusamy; Wang, Chong M.

    2009-04-01

    This paper briefly summarizes the results from a project aimed to develop an understanding of oxygen ionic transport processes in highly oriented thin film oxide materials to enable the design of new types of electrolyte materials for solid state electrochemical devices. We have used oxygen-plasma-assisted molecular beam epitaxy (OPA-MBE) to grow highly oriented doped ceria, zriconia thin films on single crystal c-Al2O3 along with multilayered hetero-structures. The influence of dopant concentration, interfaces, defects and crystalline quality on oxygen ionic conductivity has been critically analyzed using various surface and bulk sensitive capabilities. Although, preferred (111) orientation was preserved in high quality samaria doped ceria films up to a 10 atom% Sm doping, the films started to show polycrystalline features for higher Sm doping. Maximum conductivity was obtained for 5 atom% Sm doping in ceria. In the case of gadolinia doped ceria/zirconia multi-layer films, total conductivity was found to increase with the increasing number of layers.

  19. Pyroelectric and piezoelectric responses of thin AlN films epitaxy-grown on a SiC/Si substrate

    Science.gov (United States)

    Kukushkin, S. A.; Osipov, A. V.; Sergeeva, O. N.; Kiselev, D. A.; Bogomolov, A. A.; Solnyshkin, A. V.; Kaptelov, E. Yu.; Senkevich, S. V.; Pronin, I. P.

    2016-05-01

    This paper presents the results of pyroelectric and piezoelectric studies of AlN films formed by chloride-hydride epitaxy (CHE) and molecular beam epitaxy (MBE) on epitaxial SiC nanolayers grown on Si by the atom substitution method. The surface topography and piezoelectric and pyroelecrtric responses of AlN films have been analyzed. The results of the study have shown that the vertical component of the piezoresponse in CHE-grown AlN films is more homogeneous over the film area than that in MBE-grown AlN films. However, the signal from the MBE-synthesized AlN films proved to be stronger. The inversion of the polar axis (polarization vector) on passage from MBE-grown AlN films to CHE-grown AlN films has been found experimentally. It has been shown that the polar axis in MBE-grown films is directed from the free surface of the film toward the Si substrate while, in CHE-grown films, the polarization vector is directed toward the free surface.

  20. Nanocrystalline magnetite thin films grown by dual ion-beam sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Prieto, Pilar, E-mail: pilar.prieto@uam.es [Departamento de Física Aplicada M-12, Universidad Autónoma de Madrid, Cantoblanco, 28049 Madrid (Spain); Ruiz, Patricia [Departamento de Física Aplicada M-12, Universidad Autónoma de Madrid, Cantoblanco, 28049 Madrid (Spain); Ferrer, Isabel J. [Departamento de Física de Materiales M-4, Universidad Autónoma de Madrid, Cantoblanco, 28049 Madrid (Spain); Figuera, Juan de la; Marco, José F. [Instituto de Química Física “Rocasolano”, CSIC, Serrano 119, 28006 Madrid (Spain)

    2015-07-05

    Highlights: • We have grown tensile and compressive strained nanocrystalline magnetite thin films by dual ion beam sputtering. • The magnetic and thermoelectric properties can be controlled by the deposition conditions. • The magnetic anisotropy depends on the crystalline grain size. • The thermoelectric properties depend on the type of strain induced in the films. • In plane uniaxial magnetic anisotropy develops in magnetite thin films with grain sizes ⩽20 nm. - Abstract: We have explored the influence of an ion-assisted beam in the thermoelectric and magnetic properties of nanocrystalline magnetite thin films grown by ion-beam sputtering. The microstructure has been investigated by XRD. Tensile and compressive strained thin films have been obtained as a function of the parameters of the ion-assisted beam. The evolution of the in-plane magnetic anisotropy was attributed to crystalline grain size. In some films, magneto-optical Kerr effect measurements reveal the existence of uniaxial magnetic anisotropy induced by the deposition process related with a small grain size (⩽20 nm). Isotropic magnetic properties have observed in nanocrystalline magnetite thin film having larger grain sizes. The largest power factor of all the films prepared (0.47 μW/K{sup 2} cm), obtained from a Seebeck coefficient of −80 μV/K and an electrical resistivity of 13 mΩ cm, is obtained in a nanocrystalline magnetite thin film with an expanded out-of-plane lattice and with a grain size ≈30 nm.

  1. Purification of carbon nanotubes grown by thermal CVD

    Science.gov (United States)

    Porro, S.; Musso, S.; Vinante, M.; Vanzetti, L.; Anderle, M.; Trotta, F.; Tagliaferro, A.

    2007-03-01

    We show the results of a set of purifications on carbon nanotubes (CNT) by acid and basic treatments. CNTs were obtained by thermal decomposition of camphor at 850 °C in a CVD growth system, by means of a growth process catalyzed by iron clusters originating from the addition of ferrocene in the precursors mixture. The purification procedures involved HNO 3, H 2SO 4, HSO 3Cl and NaOH for different process temperatures. As-grown CNTs showed a consistent presence of metal catalyst (about 6 wt%), evidenced by TGA. The purification treatments led to a certain amount of opening of the CNT tips, with a consequent loss of metal catalyst encapsulated in tips. This is also confirmed by BET analysis, which showed an increase of the surface area density of CNT after the purification. FT-IR and XPS revealed the presence of carboxylic groups on the CNT surface chemically modified by the harsh environment of the purification process. Among the various treatments that have been tested, the 1:3 solution of nitric and sulphuric acid was the most effective in modifying the CNT surface and inducing the formation of functional groups.

  2. Epitaxial Cu(001) films grown on a Cr/Ag/Fe/GaAs(001) buffer system

    Energy Technology Data Exchange (ETDEWEB)

    Gottlob, Daniel M., E-mail: d.gottlob@fz-juelich.de [Peter Grünberg Institut, Electronic Properties (PGI-6), Forschungszentrum Jülich, 52425 Jülich (Germany); Fakultät für Physik and Center for Nanointegration Duisburg-Essen (CeNIDE), Universität Duisburg-Essen, 47048 Duisburg (Germany); Jansen, Thomas [Peter Grünberg Institut, Electronic Properties (PGI-6), Forschungszentrum Jülich, 52425 Jülich (Germany); Jülich-Aachen Research Alliance, Fundamentals for Future Information Technology (JARA-FIT), Forschungszentrum Jülich, 52425 Jülich (Germany); Hoppe, Michael [Peter Grünberg Institut, Electronic Properties (PGI-6), Forschungszentrum Jülich, 52425 Jülich (Germany); Bürgler, Daniel E. [Peter Grünberg Institut, Electronic Properties (PGI-6), Forschungszentrum Jülich, 52425 Jülich (Germany); Jülich-Aachen Research Alliance, Fundamentals for Future Information Technology (JARA-FIT), Forschungszentrum Jülich, 52425 Jülich (Germany); and others

    2014-07-01

    We present a procedure to prepare single-crystalline, high-purity Cu(001) films (templates) suitable as substrates for subsequent epitaxial thin-film growth. The template films were grown in a dedicated molecular-beam epitaxy system on a Cr/Ag/Fe/GaAs(001) buffer layer system. Low-energy electron diffraction and X-ray diffraction were applied to determine the surface orientation and the epitaxial relationship between all layers of the stack. Post-annealing at moderate temperatures enhances the quality of the film as shown by low-energy electron diffraction and atomic force microscopy. X-ray photoemission and Auger electron spectroscopy confirm that no atoms of the buffer layers diffuse into the Cu film during the initial preparation and the post-annealing treatment. The completed Cu(001) template system can be exposed to air and afterwards refurbished by Ar{sup +}-ion bombardment and annealing, enabling the transfer between vacuum systems. The procedure provides suitable conductive thin film templates for studies of epitaxial thin films, e.g. on the magnetic and magnetotransport properties of Co and Ni based films and multilayers. - Highlights: • Preparation of epitaxial Cu(001) template films on an insulating substrate • Characterization of template structure, orientation, cleanness, and roughness • Template films can be exposed to air and refurbished in different vacuum system. • Template films are suitable for further thin film growth at up to 570 K.

  3. Carbon Nanotubes Grown on Metal Microelectrodes for the Detection of Dopamine

    OpenAIRE

    Yang, Cheng; Jacobs, Christopher B.; Nguyen, Michael D.; Ganesana, Mallikarjunarao; Zestos, Alexander G.; Ivanov, Ilia N.; Puretzky, Alexander A.; Rouleau, Christopher M.; Geohegan, David B.; Venton, B. Jill

    2015-01-01

    Microelectrodes modified with carbon nanotubes (CNTs) are useful for the detection of neurotransmitters because the CNTs enhance sensitivity and have electrocatalytic effects. CNTs can be grown on carbon fiber microelectrodes (CFMEs) but the intrinsic electrochemical activity of carbon fibers makes evaluating the effect of CNT enhancement difficult. Metal wires are highly conductive and many metals have no intrinsic electrochemical activity for dopamine, so we investigated CNTs grown on metal...

  4. Molecular alignments in sexiphenyl thin films epitaxially grown on muscovite

    Energy Technology Data Exchange (ETDEWEB)

    Plank, H.; Resel, R.; Sitter, H.; Andreev, A.; Sariciftci, N.S.; Hlawacek, G.; Teichert, C.; Thierry, A.; Lotz, B

    2003-10-22

    The epitaxial orientations of highly crystalline para-sexiphenyl (C{sub 36}H{sub 26}) films on mica (001) surfaces are investigated by selected area electron diffraction (SAED) and transmission electron microscopy (TEM). Films at the early growth stage (growth time 26 s) and at an advanced growth stage (growth time 10 min) are studied. Films at the early growth stage exhibit only three-dimensional islands with an average size of 60x30x10 nm{sup 3}, whereas films at an advanced growth stage consist of long oriented nano-fibres with a needle-like morphology. We identified three different types of epitaxial relations between the mica (001) substrate and the sexiphenyl crystallites, which are the same in both growth stages. Moreover, within a single island as well as within a single fibre crystalline domains with these three epitaxial orientations are observed. At the advanced growth stage, these domains are aligned antiparallel or perpendicular to the fibre axes; the typical size of the domains is 20 nm.

  5. Films of Carbon Nanomaterials for Transparent Conductors

    Directory of Open Access Journals (Sweden)

    Jun Wei

    2013-05-01

    Full Text Available The demand for transparent conductors is expected to grow rapidly as electronic devices, such as touch screens, displays, solid state lighting and photovoltaics become ubiquitous in our lives. Doped metal oxides, especially indium tin oxide, are the commonly used materials for transparent conductors. As there are some drawbacks to this class of materials, exploration of alternative materials has been conducted. There is an interest in films of carbon nanomaterials such as, carbon nanotubes and graphene as they exhibit outstanding properties. This article reviews the synthesis and assembly of these films and their post-treatment. These processes determine the film performance and understanding of this platform will be useful for future work to improve the film performance.

  6. Nanosized graphene crystallite induced strong magnetism in pure carbon films.

    Science.gov (United States)

    Wang, Chao; Zhang, Xi; Diao, Dongfeng

    2015-03-14

    We report strong magnetism in pure carbon films grown by electron irradiation assisted physical vapor deposition in electron cyclotron resonance plasma. The development of graphene nanocrystallites in the amorphous film matrix, and the dependence of the magnetic behavior on amorphous, nanocrystallite and graphite-like structures were investigated. Results were that the amorphous structure shows weak paramagnetism, graphene nanocrystallites lead to strong magnetization, and graphite-like structures corresponded with a lower magnetization. At a room temperature of 300 K, the highest saturation magnetization of 0.37 emu g(-1) was found in the nanosized graphene nanocrystallite structure. The origin of strong magnetism in nanocrystallites was ascribed to the spin magnetic moment at the graphene layer edges.

  7. Pure electron-electron dephasing in percolative aluminum ultrathin film grown by molecular beam epitaxy.

    Science.gov (United States)

    Lin, Shih-Wei; Wu, Yue-Han; Chang, Li; Liang, Chi-Te; Lin, Sheng-Di

    2015-01-01

    We have successfully grown ultrathin continuous aluminum film by molecular beam epitaxy. This percolative aluminum film is single crystalline and strain free as characterized by transmission electron microscopy and atomic force microscopy. The weak anti-localization effect is observed in the temperature range of 1.4 to 10 K with this sample, and it reveals that, for the first time, the dephasing is purely caused by electron-electron inelastic scattering in aluminum.

  8. Single-layer nano-carbon film, diamond film, and diamond/nano-carbon composite film field emission performance comparison

    Science.gov (United States)

    Wang, Xiaoping; Wang, Jinye; Wang, Lijun

    2016-05-01

    A series of single-layer nano-carbon (SNC) films, diamond films, and diamond/nano-carbon (D/NC) composite films have been prepared on the highly doped silicon substrate by using microwave plasma chemical vapor deposition techniques. The films were characterised by scanning electron microscopy, Raman spectroscopy, and field emission I-V measurements. The experimental results indicated that the field emission maximum current density of D/NC composite films is 11.8-17.8 times that of diamond films. And the field emission current density of D/NC composite films is 2.9-5 times that of SNC films at an electric field of 3.0 V/μm. At the same time, the D/NC composite film exhibits the advantage of improved reproducibility and long term stability (both of the nano-carbon film within the D/NC composite cathode and the SNC cathode were prepared under the same experimental conditions). And for the D/NC composite sample, a high current density of 10 mA/cm2 at an electric field of 3.0 V/μm was obtained. Diamond layer can effectively improve the field emission characteristics of nano-carbon film. The reason may be due to the diamond film acts as the electron acceleration layer.

  9. Preparation and characterization of GaN films grown on Ga-diffused Si(111) substrates

    Institute of Scientific and Technical Information of China (English)

    SUN Zhencui; CAO Wentian; WEI Qinqin; WANG Shuyun; XUE Chengshan; SUN Haibo

    2005-01-01

    Hexagonal GaN films were prepared by nitriding Ga2O3 films with flowing ammonia. Ga2O3 films were deposited on Ga-diffused Si (111) substrates by radio frequency (r.f.) magnetron sputtering. This paper have investigated the change of structural properties of GaN films nitrided in NH3 atmosphere at the temperatures of 850, 900, and 950℃ for 15min and nitrided at the temperature of 900℃ for 10, 15, and 20 min, respectively. X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) were used to analyze the structure, surface morphology and composition of synthesized samples. The results reveal that the as-grown films are polycrystalline GaN with hexagonal wurtzite structure and GaN films with the highest crystal quality can be obtained when nitrided at 900℃ for 15 min.

  10. Characterisation of molecular thin films grown by organic molecular beam deposition

    CERN Document Server

    Bayliss, S M

    2000-01-01

    This work concerns the growth and characterisation of molecular thin films in an ultra high vacuum regime by organic molecular beam deposition (OMBD). Films of three different molecular materials are grown, namely free base phthalocyanine (H sub 2 Pc), perylene 3,4,9,10-tetracarboxylic dianhydride (PTCDA) and aluminium tris-8-hydroxyquinoline (Alq sub 3). The relationship between the growth parameters such as film thickness, growth rate, and substrate temperature during and after growth, and the structural, optical and morphological properties of the film are investigated. These investigations are carried out using various ex-situ techniques. X-ray diffraction, Raman spectroscopy and electronic absorption spectroscopy are used to probe the bulk film characteristics, whilst Nomarski microscopy and atomic force microscopy are used to study the surface morphology. Three different levels of influence of the growth parameters on the film properties are observed. In the case of H sub 2 Pc, two crystal phases are fo...

  11. Electromagnetic characteristics of carbon nanotube film materials

    Directory of Open Access Journals (Sweden)

    Zhang Wei

    2015-08-01

    Full Text Available Carbon nanotube (CNT possesses remarkable electrical conductivity, which shows great potential for the application as electromagnetic shielding material. This paper aims to characterize the electromagnetic parameters of a high CNT loading film by using waveguide method. The effects of layer number of CNT laminate, CNT alignment and resin impregnation on the electromagnetic characteristics were analyzed. It is shown that CNT film exhibits anisotropic electromagnetic characteristic. Pristine CNT film shows higher real part of complex permittivity, conductivity and shielding effectiveness when the polarized direction of incident wave is perpendicular to the winding direction of CNT film. For the CNT film laminates, complex permittivity increases with increasing layer number, and correspondingly, shielding effectiveness decreases. The five-layer CNT film shows extraordinary shielding performance with shielding effectiveness ranging from 67 dB to 78 dB in X-band. Stretching process induces the alignment of CNTs. When aligned direction of CNTs is parallel to the electric field, CNT film shows negative permittivity and higher conductivity. Moreover, resin impregnation into CNT film leads to the decrease of conductivity and shielding effectiveness. This research will contribute to the structural design for the application of CNT film as electromagnetic shielding materials.

  12. Swift heavy ion irradiation of metal containing tetrahedral amorphous carbon films

    Energy Technology Data Exchange (ETDEWEB)

    Karaseov, P.A., E-mail: platon.karaseov@spbstu.ru [Peter the Great St. Petersburg Polytechnic University, St. Petersburg (Russian Federation); Protopopova, V.S. [Aalto University, Espoo (Finland); Karabeshkin, K.V.; Shubina, E.N.; Mishin, M.V. [Peter the Great St. Petersburg Polytechnic University, St. Petersburg (Russian Federation); Koskinen, J. [Aalto University, Espoo (Finland); Mohapatra, S. [Guru Gobind Singh Indraprastha University, New Delhi (India); Tripathi, A. [Inter University Accelerator Center, New Delhi (India); Avasthi, D.K. [Amity University, Noida 201313, Uttar Pradesh (India); Titov, A.I. [Peter the Great St. Petersburg Polytechnic University, St. Petersburg (Russian Federation)

    2016-07-15

    Highlights: • ta-C films with Ni and Cu doping were grown using dual cathode filtered vacuum arc deposition. • Conductive channels were found in the films by C-AFM after irradiation with 100 MeV Ag ions. • SEM contrast found after irradiation strongly depends on kind of metal impurity in the film. • Different chemical effect of Ni and Cu on transformation of carbon matrix under irradiation was revealed. - Abstract: Thin carbon films were grown at room temperature on (0 0 1) n-Si substrate using dual cathode filtered vacuum arc deposition system. Graphite was used as a source of carbon atoms and separate metallic electrode was simultaneously utilized to introduce Ni or Cu atoms. Films were irradiated by 100 MeV Ag{sup 7+} ions to fluences in the range 1 × 10{sup 10}–3 × 10{sup 11} cm{sup −2}. Rutherford backscattering spectroscopy, Raman scattering, scanning electron microscopy and atomic force microscopy in conductive mode were used to investigate film properties and structure change under irradiation. Some conductive channels having metallic conductivity type were found in the films. Number of such channels is less than number of impinged ions. Presence of Ni and Cu atoms increases conductivity of those conductive channels. Fluence dependence of all properties studied suggests different mechanisms of swift heavy ion irradiation-induced transformation of carbon matrix due to different chemical effect of nickel and copper atoms.

  13. Solid Lubrication of Laser Grown Fluorinated Diamond Thin Films

    Science.gov (United States)

    1992-01-21

    irradiation of laser beam on the substrate surface 2 Schematic diagram showing laser CVD experimental set- up . 27 A single laser beam (YAG or Excimer) was only...0.05 to 0.2 depending upon temperature, environment, load, speed and presence of foreign material. Todate , ultra-low coefficients of friction (0.02...Laser technology for diamond film fabrication is very new and todate only a handful number of publications are available that address directly on the

  14. Strain relaxation in thin films of Cu grown on Ni(001)

    DEFF Research Database (Denmark)

    Rasmussen, F.B.; Baker, J.; Nielsen, M.;

    1998-01-01

    Surface X-ray diffraction and kinematical model calculations are used to determine the strain relaxation of embedded wedges with internal (111) facets formed in thin Cu films when grown on Ni(001). We show the wedges to be inhomogenously strained with a large lateral relaxation near the Cu...

  15. Quasi-Freestanding multilayer graphene films on the carbon face of SiC

    Energy Technology Data Exchange (ETDEWEB)

    Siegel, D. A.; Hwang, C. G.; Fedorov, A. V.; Lanzara, A.

    2010-06-30

    The electronic band structure of as-grown and doped graphene grown on the carbon face of SiC is studied by high-resolution angle-resolved photoemission spectroscopy, where we observe both rotations between adjacent layers and AB-stacking. The band structure of quasi-freestanding AB-bilayers is directly compared with bilayer graphene grown on the Si-face of SiC to study the impact of the substrate on the electronic properties of epitaxial graphene. Our results show that the C-face films are nearly freestanding from an electronic point of view, due to the rotations between graphene layers.

  16. Electrical phase change of CVD-grown Ge-Sb-Te thin film device

    OpenAIRE

    Huang, C.C.; B. Gholipour; Ou, J.Y.; Knight, K.J.; Hewak, D. W.

    2011-01-01

    A prototype Ge-Sb-Te thin film phase-change memory device has been fabricated and reversible threshold and phase change switching demonstrated electrically, with a threshold voltage of 1.5 – 1.7 V. The Ge-Sb-Te thin film was fabricated by chemical vapour deposition (CVD) at atmospheric pressure using GeCl4, SbCl5, and Te precursors with reactive gas H2 at reaction temperature 780 °C and substrate temperature 250 °C. The surface morphology and composition of the CVD-grown Ge-Sb-Te thin film ha...

  17. Crystallinity Improvement of ZnO Thin Film on Different Buffer Layers Grown by MBE

    OpenAIRE

    2012-01-01

    The material and optical properties of ZnO thin film samples grown on different buffer layers on sapphire substrates through a two-step temperature variation growth by molecular beam epitaxy were investigated. The thin buffer layer between the ZnO layer and the sapphire substrate decreased the lattice mismatch to achieve higher quality ZnO thin film growth. A GaN buffer layer slightly increased the quality of the ZnO thin film, but the threading dislocations still stretched along the c-axis o...

  18. Magnetization reversal of ultrathin Fe film grown on Si(111) using iron silicide template

    Institute of Scientific and Technical Information of China (English)

    He Wei; Zhan Qing-Feng; Wang De-Yong; Chen Li-Jun; Sun Young; Cheng Zhao-Hua

    2007-01-01

    Ultrathin Fe films were epitaxially grown on Si(111) by using an ultrathin iron silicide film with p(2 × 2) surface reconstruction as a template. The surface structure and magnetic properties were investigated in situ by low energy electron diffraction (LEED), scanning tunnelling microscopy (STM), and surface magneto-optical effect (SMOKE). Polar SMOKE hysteresis loops demonstrate that the Fe ultrathin films with thickness t< 6 ML (monolayers) exhibit perpendicular magnetic anisotropy. The characters of M-H loops with the external magnetic field at difference angles and the angular dependence of coercivity suggest that the domain-wall pinning plays a dominant role in the magnetization reversal process.

  19. RF Magnetron Sputtering Grown Cu2O Film Structural, Morphological, and Electrical Property Dependencies on Substrate Type.

    Science.gov (United States)

    Ahn, Heejin; Um, Youngho

    2015-03-01

    We investigated the structural, morphological, and electrical properties of cuprous oxide (Cu2O) film dependency on substrate type. Thin films grown using RF magnetron sputtering were characterized by scanning electron microscopy, X-ray diffraction (XRD), and Hall effect measurements. Cu2O thin films were deposited onto sapphire (0001), Si (100), and MgO (110) substrates, and showed Cu2O single phase only, which was confirmed by XRD measurement. Relatively larger compressive strain existed in Cu2O film grown on sapphire and Si, while a smaller tensile strain appeared in Cu2O film grown on MgO. Cu2O thin film crystallite sizes showed a linear dependence on strain. Moreover, film carrier concentration and mobility increased with increasing strain, while resistivity decreased with decreasing strain. Cu2O film strain due to induced strain opens the possibility of controlling structural and electrical properties in device applications.

  20. Structural characterization of InSb thin films grown by electrodeposition

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Joginder, E-mail: joginderchauhan82@gmail.com; Rajaram, P. [School of Studies in Physics, Jiwaji University, Gwalior-474011 (India)

    2015-06-24

    In the present work we have grown InSb thin films on brass substrates, using the electrodeposition technique. The electrochemical baths used in the growth were made up of aqueous solutions of InCl{sub 3} and SbCl{sub 3} mixed together in various proportions. The films grown were characterized by X-Ray diffraction (XRD), Scanning Electron Microscopy (SEM), and Energy Dispersive Analysis of X-rays (EDAX). Compositional studies show that stoichiometric InSb films can be prepared from a bath containing 0.05M InCl{sub 3} and 0.04M SbCl{sub 3}. XRD studies reveal that the films grown are polycrystalline having the zinc blende structure with (111) orientation. Crystallite size, dislocation density and strain were calculated using the XRD results. Optical transmission spectra were recorded using an FTIR spectrophotometer. The value of direct band gap was found to be around 0.20 eV for the thin films having the best stoichiometry.

  1. Columnar structured FePt films epitaxially grown on large lattice mismatched intermediate layer

    Science.gov (United States)

    Dong, K. F.; Deng, J. Y.; Peng, Y. G.; Ju, G.; Chow, G. M.; Chen, J. S.

    2016-09-01

    The microstructure and magnetic properties of the FePt films grown on large mismatched ZrN (15.7%) intermediate layer were investigated. With using ZrN intermediate layer, FePt 10 nm films exhibited (001) texture except for some weaker FePt (110) texture. Good epitaxial relationships of FePt (001) //ZrN (001) //TiN (001) among FePt and ZrN/TiN were revealed from the transmission electron microscopy (TEM) results. As compared with TiN intermediate layer, although FePt-SiO2-C films grown on ZrN/TiN intermediate layer showed isotropic magnetic properties, the large interfacial energy and lattice mismatch between FePt and ZrN would lead to form columnar structural FePt films with smaller grain size and improved isolation. By doping ZrN into the TiN layer, solid solution of ZrTiN was formed and the lattice constant is increased comparing with TiN and decreased comparing with ZrN. Moreover, FePt-SiO2-C films grown on TiN 2 nm-20 vol.% ZrN/TiN 3 nm intermediate layer showed an improved perpendicular magnetic anisotropy. Simultaneously, columnar structure with smaller grain size retained.

  2. Annealing effects of sapphire substrate on properties of ZnO films grown by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Y.Z. [South China Normal University, School of Physics and Telecommunication Engineering, Guangzhou (China); Xu, J. [Chinese Academy of Sciences, Shanghai Institute of Optics and Fine Mechanics, P.O. Box 800-211, Shanghai (China)

    2007-09-15

    The annealing effects of sapphire substrates on the quality of epitaxial ZnO films grown by dc reactive magnetron sputtering were studied. The atomic steps formed on (0001) sapphire ({alpha}-Al{sub 2}O{sub 3}) substrates surface by annealing at high temperature were analyzed by atomic force microscopy. Their influence on the growth of ZnO films was examined by X-ray diffraction and photoluminescence measurements. Experimental results indicate that the film quality is strongly affected by annealing treatment of the sapphire substrate surface. The optimum annealing temperature of sapphire substrates for ZnO grown by magnetron sputtering is 1400 C for 1 h in air. (orig.)

  3. Do CVD grown graphene films have antibacterial activity on metallic substrates?

    CERN Document Server

    Dellieu, Louis; Reckinger, Nicolas; Didembourg, Christian; Letesson, Jean-Jacques; Sarrazin, Michael; Deparis, Olivier; Matroule, Jean-Yves; Colomer, Jean-François

    2014-01-01

    Accurate assessment of the antibacterial activity of graphene requires consideration of both the graphene fabrication method and, for supported films, the properties of the substrate. Large-area graphene films produced by chemical vapor deposition were grown directly on copper substrates or transferred on a gold substrate and their effect on the viability and proliferation of the Gram-positive bacteria Staphylococcus aureus and the Gram-negative bacteria Escherichia coli were assessed. The viability and the proliferation of both bacterial species were not affected when they were grown on a graphene film entirely covering the gold substrate, indicating that conductivity plays no role on bacterial viability and graphene has no antibacterial activity against S. aureus and E. coli. On the other hand, antibacterial activity was observed when graphene coated the copper substrates, resulting from the release of bactericidal cupric ions in inverse proportion to the graphene surface coverage.

  4. Mobility enhanced photoactivity in sol-gel grown epitaxial anatase TiO2 films.

    Science.gov (United States)

    Jung, Hyun Suk; Lee, Jung-Kun; Lee, Jaegab; Kang, Bo Soo; Jia, Quanxi; Nastasi, Michael; Noh, Jun Hong; Cho, Chin-Moo; Yoon, Sung Hoon

    2008-03-18

    Epitaxial anatase thin films were grown on single-crystal LaAlO3 substrates by a sol-gel process. The epitaxial relationship between TiO2 and LaAlO3 was found to be [100]TiO2||[100]LaAlO3 and (001)TiO2||(001)LaAlO3 based on X-ray diffraction and a high-resolution transmission electron microscopy. The epitaxial anatase films show significantly improved photocatalytic properties, compared with polycrystalline anatase film on fused silica substrate. The increase in the photocatalytic activity of epitaxial anatase films is explained by enhanced charge carrier mobility, which is traced to the decreased grain boundary density in the epitaxial anatase film.

  5. Structural morphology of amorphous conducting carbon film

    Indian Academy of Sciences (India)

    P N Vishwakarma; V Prasad; S V Subramanyam; V Ganesan

    2005-10-01

    Amorphous conducting carbon films deposited over quartz substrates were analysed using X-ray diffraction and AFM technique. X-ray diffraction data reveal disorder and roughness in the plane of graphene sheet as compared to that of graphite. This roughness increases with decrease in preparation temperature. The AFM data shows surface roughness of carbon films depending on preparation temperatures. The surface roughness increases with decrease in preparation temperature. Also some nucleating islands were seen on the samples prepared at 900°C, which are not present on the films prepared at 700°C. Detailed analysis of these islands reveals distorted graphitic lattice arrangement. So we believe these islands to be nucleating graphitic. Power spectrum density (PSD) analysis of the carbon surface indicates a transition from the nonlinear growth mode to linear surface-diffusion dominated growth mode resulting in a relatively smoother surface as one moves from low preparation temperature to high preparation temperature. The amorphous carbon films deposited over a rough quartz substrate reveal nucleating diamond like structures. The density of these nucleating diamond like structures was found to be independent of substrate temperature (700–900°C).

  6. Hard Carbon Films Deposited under Various Atmospheres

    Science.gov (United States)

    Wei, M.-K.; Chen, S.-C.; Wu, T. C.; Lee, Sanboh

    1998-03-01

    Using a carbon target ablated with an XeCl-excimer laser under various gas atmospheres at different pressures, hard carbon was deposited on silicon, iron and tungsten carbide substrates. The hardness, friction coefficient, and wear rate of the film against steel are better than pure substrate material, respectively, so that it has potential to be used as a protective coating for micromechanical elements. The influences of gas pressure, gas atmosphere, and power density of laser irradiation on the thermal stability of film were analyzed by means of Raman-spectroscope, time-of-flight method, and optical emission spectrum. It was found that the film deposited under higher pressure has less diamond-like character. The film deposited under rest gas or argon atmosphere was very unstable and looked like a little graphite-like character. The film deposited at high vacuum (10-5 mbar rest gas) was the most stable and looked like the most diamond-like character. The film deposited at higher power density was more diamond-like than that at lower power density.

  7. Carbon Nanotube Thin-Film Antennas.

    Science.gov (United States)

    Puchades, Ivan; Rossi, Jamie E; Cress, Cory D; Naglich, Eric; Landi, Brian J

    2016-08-17

    Multiwalled carbon nanotube (MWCNT) and single-walled carbon nanotube (SWCNT) dipole antennas have been successfully designed, fabricated, and tested. Antennas of varying lengths were fabricated using flexible bulk MWCNT sheet material and evaluated to confirm the validity of a full-wave antenna design equation. The ∼20× improvement in electrical conductivity provided by chemically doped SWCNT thin films over MWCNT sheets presents an opportunity for the fabrication of thin-film antennas, leading to potentially simplified system integration and optical transparency. The resonance characteristics of a fabricated chlorosulfonic acid-doped SWCNT thin-film antenna demonstrate the feasibility of the technology and indicate that when the sheet resistance of the thin film is >40 ohm/sq no power is absorbed by the antenna and that a sheet resistance of antenna. The dependence of the return loss performance on the SWCNT sheet resistance is consistent with unbalanced metal, metal oxide, and other CNT-based thin-film antennas, and it provides a framework for which other thin-film antennas can be designed.

  8. Structural and nonlinear optical properties of as-grown and annealed metallophthalocyanine thin films

    Energy Technology Data Exchange (ETDEWEB)

    Zawadzka, A., E-mail: azawa@fizyka.umk.pl [Institute of Physics, Faculty of Physics, Astronomy and Informatics, Nicolaus Copernicus University, Grudziadzka 5, 87-100 Torun (Poland); Płóciennik, P.; Strzelecki, J. [Institute of Physics, Faculty of Physics, Astronomy and Informatics, Nicolaus Copernicus University, Grudziadzka 5, 87-100 Torun (Poland); Pranaitis, M.; Dabos-Seignon, S.; Sahraoui, B. [LUNAM Université, Université d' Angers, CNRS UMR 6200, Laboratoire MOLTECH-Anjou, 2 bd Lavoisier, 49045 Angers cedex (France)

    2013-10-31

    The paper presents the Third Harmonic Generation investigation of four metallophtalocyanine (MPc, M = Cu, Co, Mg and Zn) thin films. The investigated films were fabricated by Physical Vapor Deposition in high vacuum onto quartz substrates. MPc thin films were annealed after fabrication in ambient atmosphere for 12 h at the temperature equal to 150 °C or 250 °C. The Third Harmonic Generation spectra were measured to investigate the nonlinear optical properties and their dependence on the structure of the thin film after the annealing process. This approach allowed us to determine the electronic contribution of the third-order nonlinear optical susceptibility χ{sup <3>}{sub elec} of these MPc films and to investigate two theoretical models for explanation of the observed results. We find that the annealing process significantly changes the optical and structural properties of MPc thin films. - Highlights: • Metallophtalocyanine thin films were grown by Physical Vapor Deposition technique. • MPcs thin films were undergone an annealing process in ambient atmosphere. • Third Harmonic spectra were measured to investigate nonlinear optical properties. • The third order nonlinear optical susceptibility χ{sup <3>}{sub elec} was determined. • We report changing both nonlinear optical and structural properties of thin films.

  9. Surface morphology stabilization by chemical sputtering in carbon nitride film growth

    Energy Technology Data Exchange (ETDEWEB)

    Buijnsters, J G [Institute for Molecules and Materials (IMM), Radboud University Nijmegen, Toernooiveld 1, 6525 ED Nijmegen (Netherlands); Vazquez, L [Instituto de Ciencia de Materiales de Madrid (CSIC), C/Sor Juana Ines de la Cruz 3, 28049 Madrid (Spain)

    2008-01-07

    We have studied the influence of chemical sputtering effects on the morphology of carbon nitride films grown on silicon substrates by electron cyclotron resonance chemical vapour deposition. This study has been performed by comparing the evolution of their morphology with that of hydrogenated amorphous carbon films grown under similar conditions, where these effects are not present. When chemical sputtering effects operate we observe a film surface stabilization for length scales in the 60-750 nm range after a threshold roughness of about 3-4 nm has been developed. This stabilization is explained on the basis of the re-emission of nitrogen etching species, which is confirmed by growth experiments on microstructured substrates. (fast track communication)

  10. Swift heavy ion irradiation of metal containing tetrahedral amorphous carbon films

    Science.gov (United States)

    Karaseov, P. A.; Protopopova, V. S.; Karabeshkin, K. V.; Shubina, E. N.; Mishin, M. V.; Koskinen, J.; Mohapatra, S.; Tripathi, A.; Avasthi, D. K.; Titov, A. I.

    2016-07-01

    Thin carbon films were grown at room temperature on (0 0 1) n-Si substrate using dual cathode filtered vacuum arc deposition system. Graphite was used as a source of carbon atoms and separate metallic electrode was simultaneously utilized to introduce Ni or Cu atoms. Films were irradiated by 100 MeV Ag7+ ions to fluences in the range 1 × 1010-3 × 1011 cm-2. Rutherford backscattering spectroscopy, Raman scattering, scanning electron microscopy and atomic force microscopy in conductive mode were used to investigate film properties and structure change under irradiation. Some conductive channels having metallic conductivity type were found in the films. Number of such channels is less than number of impinged ions. Presence of Ni and Cu atoms increases conductivity of those conductive channels. Fluence dependence of all properties studied suggests different mechanisms of swift heavy ion irradiation-induced transformation of carbon matrix due to different chemical effect of nickel and copper atoms.

  11. Superconducting YBa 2Cu 3O 7- δ thin film grown on metallic film evaporated on MgO

    Science.gov (United States)

    Verdyan, A.; Azoulay, J.; Lapsker, I.

    2001-03-01

    At present it is commonly accepted that thin film formation of YBa 2Cu 3O 7- δ (YBCO) on conducting substrate is one of the keys to further development of advanced devices in the microelectronic and other applications. We have grown YBCO thin films by resistive evaporation technique on MgO coated with metallic layers (Ni or Ag). A simple inexpensive vacuum system equipped with resistively heated boats for metal and precursor mixture of yttrium, copper and barium fluoride powders was used. X-ray diffraction (XRD) and scanning electron microscopy techniques were used for texture, morphology and surface analyses respectively. Electrical and magnetical properties were determined by a standard dc four-probe method. The way of heating process is shown to be critical parameter in the film quality. The physical and electrical properties of the YBCO films are discussed in light of the fact that XRD measurements done on the metallic buffer layers have revealed a multicrystalline structure.

  12. Amorphous hydrogenated carbon films treated by SF{sub 6} plasma

    Energy Technology Data Exchange (ETDEWEB)

    Marins, N M S; Mota, R P; Santos, D C R; Honda, R Y; Kayama, M E; Kostov, K G; Algatti, M A [Laboratorio de Plasma, Faculdade de Engenharia, UNESP, Av. Dr. Ariberto Pereira da Cunha-333, 12516-410, Guaratingueta, SP (Brazil); Cruz, N C; Rangel, E C, E-mail: nazir@feg.unesp.b [Laboratorio de Plasmas Tecnologicos, Unidade Diferenciada Sorocaba/Ipero, UNESP, Av. Tres de Marco-511, 18085-180, Sorocaba, SP (Brazil)

    2009-05-01

    This work was performed to verify the chemical structure, mechanical and hydrophilic properties of amorphous hydrogenated carbon films prepared by plasma enhanced chemical vapor deposition, using acetylene/argon mixture as monomer. Films were prepared in a cylindrical quartz reactor, fed by 13.56 MHz radiofrequency. The films were grown during 5 min, for power varying from 25 to 125 W at a fixed pressure of 9.5 Pa. After deposition, all samples were treated by SF{sub 6} plasma with the aim of changing their hydrophilic character. Film chemical structure investigated by Raman spectroscopy, revealed the increase of sp{sup 3} hybridized carbon bonds as the plasma power increases. Hardness measurements performed by the nanoindentation technique showed an improvement from 5 GPa to 14 GPa following the increase discharge power. The untreated films presented a hydrophilic character, which slightly diminished after SF{sub 6} plasma treatment.

  13. Biocidal Silver and Silver/Titania Composite Films Grown by Chemical Vapour Deposition

    Directory of Open Access Journals (Sweden)

    D. W. Sheel

    2008-01-01

    Full Text Available This paper describes the growth and testing of highly active biocidal films based on photocatalytically active films of TiO2, grown by thermal CVD, functionally and structurally modified by deposition of nanostructured silver via a novel flame assisted combination CVD process. The resulting composite films are shown to be highly durable, highly photocatalytically active and are also shown to possess strong antibacterial behaviour. The deposition control, arising from the described approach, offers the potential to control the film nanostructure, which is proposed to be crucial in determining the photo and bioactivity of the combined film structure, and the transparency of the composite films. Furthermore, we show that the resultant films are active to a range of organisms, including Gram-negative and Gram-positive bacteria, and viruses. The very high-biocidal activity is above that expected from the concentrations of silver present, and this is discussed in terms of nanostructure of the titania/silver surface. These properties are especially significant when combined with the well-known durability of CVD deposited thin films, offering new opportunities for enhanced application in areas where biocidal surface functionality is sought.

  14. Structural and morphological characterizations of ZnO films grown on GaAs substrates by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Agouram, S.; Zuniga Perez, J.; Munoz-Sanjose, V. [Universitat de Valencia, Departamento de Fisica Aplicada y Electromagnetismo, Burjassot (Spain)

    2007-07-15

    ZnO films were grown on GaAs(100), GaAs(111)A and GaAs(111)B substrates by metal organic chemical vapour deposition (MOCVD). Diethylzinc (DEZn) and tertiarybutanol (t-butanol) were used as Zn and O precursors, respectively. The influence of the growth temperature and GaAs substrate orientation on the crystalline orientation and morphology of the ZnO grown films has been analysed. Crystallinity of grown films was studied by X-ray diffraction (XRD); thickness and morphology of ZnO films were investigated by scanning electron microscopy (SEM). SEM results reveal significant differences between morphologies depending on growth temperature but not significant differences were detected on the texture of grown films. (orig.)

  15. On detection of the Fermi edge in in situ grown thin films of high- Tc oxides

    Science.gov (United States)

    Abrecht, M.; Ariosa, D.; Saleh, S. A.; Rast, S.; Margaritondo, G.; Onellion, M.; Pavuna, D.

    2001-11-01

    We discuss our systematic series of experiments on the photoelectric detection of the Fermi edge using a cylindrical mirror analyser on films of high- Tc oxides, grown in situ by pulsed laser ablation. The Fermi edge (comparable to the edge of the reference Ag) is very easily observed even in the two-phase BSCCO-2212 film that exhibits onsets of superconducting transitions, at 85 and 45 K. In contrast, the Fermi edge is weaker and more difficult to observe even in the state-of-the-art, highly epitaxial, monophase YBa 2Cu 3O 7- y (YBCO) and NdBa 2Cu 3O 7- y (NBCO-123) films (both with Tc=92 K). So far we could not detect the Fermi edge in the films of the double-`chain' YBCO-124.

  16. Engineering of Wet Chemically Grown Nanostructured Zinc Oxide Thin Film by High Electronic Excitation

    Science.gov (United States)

    Birajadar, Ravikiran B.; Ghosh, Arindam A.; Joshi, Rajesh A.; Taur, Vidya S.; Shaikh, S. U.; Ghule, Anil V.; Sharma, Ramphal

    2011-07-01

    Thin films of ZnO are synthesized on ITO substrate using successive ionic layer adsorption and reaction (SILAR) technique. The as-grown thin films were annealed at 250 °C (pristine) in vacuum atmosphere (10-2 Torr) for 1 h and further irradiated using 120 MeV Au9+ ions with different fluence 3×1012 and 5×1012 ions/cm2. These pristine and irradiated samples were studied for structural and optoelectronic properties. XRD study reveals better crystalline quality of film at 3×1012 ions/cm2 fluence. On the other hand, electrical resistivity of the films decreases from 13.44 Ω-cm to 3.74 Ω-cm with increase in irradiation fluence. Also it appears that irradiation does not affect absorption edge.

  17. N-Type Conductive Ultrananocrystalline Diamond Films Grown by Hot Filament CVD

    Directory of Open Access Journals (Sweden)

    Michael Mertens

    2015-01-01

    Full Text Available We present the synthesis of ultrananocrystalline diamond (UNCD films by application of hot filament chemical vapor deposition (HFCVD. We furthermore studied the different morphological, structural, and electrical properties. The grown films are fine grained with grain sizes between 4 and 7 nm. The UNCD films exhibit different electrical conductivities, dependent on grain boundary structure. We present different contact metallizations exhibiting ohmic contact behavior and good adhesion to the UNCD surface. The temperature dependence of the electrical conductivity is presented between −200 and 900°C. We furthermore present spectroscopic investigations of the films, supporting that the origin of the conductivity is the structure and volume of the grain boundary.

  18. Tunability of the superconductivity of tungsten films grown by focused-ion-beam direct writing

    Science.gov (United States)

    Li, Wuxia; Fenton, J. C.; Wang, Yiqian; McComb, D. W.; Warburton, P. A.

    2008-11-01

    We have grown tungsten-containing films by focused-ion-beam (FIB)-induced chemical vapor deposition. The films lie close to the metal-insulator transition with an electrical conductivity which changes by less than 5% between room temperature and 7 K. The superconducting transition temperature Tc of the films can be controlled between 5.0 and 6.2 K by varying the ion-beam deposition current. The Tc can be correlated with how far the films are from the metal-insulator transition, showing a nonmonotonic dependence, which is well described by the heuristic model of [Osofsky et al., Phys. Rev. Lett. 87, 197004 (2001)]. Our results suggest that FIB direct-writing of W composites might be a potential approach to fabricate mask-free superconducting devices as well as to explore the role of reduced dimensionality on superconductivity.

  19. Variable range hopping crossover and magnetotransport in PLD grown Sb doped ZnO thin film

    Science.gov (United States)

    Mukherjee, Joynarayan; Mannam, Ramanjaneyulu; Ramachandra Rao, M. S.

    2017-04-01

    We report on the variable range hopping (VRH) crossover in the electrical transport of Sb doped ZnO (SZO) thin film. Structural, chemical, electrical and magnetotransport properties were carried out on SZO thin film grown by pulsed laser deposition. X-photoelectron spectroscopy study confirms the presence of both Sb3+(33%) and Sb5+(67%) states. Sb doped ZnO thin film shows n-type behavior which is attributed to the formation of SbZn and/or SbZn–VZn defect complex. Temperature dependent resistivity measurement showed that in a low temperature regime (doped ZnO thin films is explained by the Khosla and Fischer model.

  20. Temperature dependent photoluminescence characteristics of nanocrystalline ZnO films grown by sol-gel technique

    Energy Technology Data Exchange (ETDEWEB)

    Mandal, S.; Goswami, M.L.N.; Das, K.; Dhar, A. [Department of Physics and Meteorology, IIT Kharagpur 721 302 (India); Ray, S.K. [Department of Physics and Meteorology, IIT Kharagpur 721 302 (India)], E-mail: physkr@phy.iitkgp.ernet.in

    2008-10-01

    The structural as well as optical properties of nanocrystalline ZnO films, with hexagonal shaped particles of size 30-35 nm grown on p-Si (100) substrates by sol-gel technique, are investigated. Selected-area electron diffraction and X-ray diffraction patterns of annealed films reveal the formation of wurtzite structure. The mechanism of ultraviolet (UV) and green emission from ZnO thin films, post-annealed at various temperatures, is investigated using photoluminescence spectra. The oxygen content in annealed ZnO films plays an important role to suppress the green band emission. Temperature dependent photoluminescence spectra are recorded in the temperature range 10 K to 300 K to investigate different excitonic peaks in the UV-region.

  1. Physical properties of Bi doped CdTe thin films grown by the CSVT method

    Energy Technology Data Exchange (ETDEWEB)

    Vigil-Galan, O.; Sastre-Hernandez, J.; Cruz-Gandarilla, F.; Aguilar-Hernandez, J.; Contreras-Puente, G.; Tufino-Velazquez, M. [Escuela Superior de Fisica y Matematicas, Instituto Politecnico Nacional, 07738 Mexico D. F. (Mexico); Marin, E. [Centro de Investigacion en Ciencia Aplicada y Tecnologia Avanzada, Instituto Politecnico Nacional, 11500 Mexico, D. F. (Mexico); Saucedo, E.; Ruiz, C.M.; Bermudez, V. [Departamento de Fisica de Materiales, Universidad Autonoma de Madrid, 28049 Madrid (Spain)

    2006-09-22

    A study of the physical properties of CdTe thin films doped with Bi is presented. CdTe:Bi thin films were deposited by the close space vapor transport (CSVT) technique using powdered CdTe:Bi crystals grown by the vertical Bridgman method. CdTe:Bi crystals were obtained with nominal Bi doping concentrations varying in the 1x10{sup 17}-8x10{sup 18}cm{sup -3} range. The physical properties of CdTe:Bi thin films were studied performing photoluminescence, X-ray, SEM, photoacoustic spectroscopy and resistivity measurements. We observed a decrease of the resistivity values of CdTe:Bi films with the Bi content as low as 6x10{sup 5}{omega}-cm for Bi concentrations of 8x10{sup 18}cm{sup -3}. These are meaningful results for CdTe-based solar cells. (author)

  2. Morphology of superconducting FeSe thin films grown by MBE and RF-sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Kronenberg, Alexander; Venzmer, Eike; Haaf, Sebastian ten; Jourdan, Martin [Institut fuer Physik, Johannes Gutenberg Universitaet Mainz (Germany); Maletz, Janek [Institut fuer Physik, Johannes Gutenberg Universitaet Mainz (Germany); Leibniz-Institut fuer Festkoerper- und Werkstoffforschung, Dresden (Germany)

    2013-07-01

    Tunneling spectroscopy on planar junctions is the most direct approach for the investigation of superconducting coupling mechanisms. However, it requires smooth interfaces at the tunneling barrier. The morphology of superconducting thin films of FeSe grown by MBE and co-sputtering (RF) from an iron and a selenium target are compared. MBE deposited films show an extreme sensitivity to stoichiometry, deposition temperature and choice of substrate. These films exhibit macroscopic crevices and a pronounced roughness, rendering the preparation of tunneling junctions impossible. However, sputter deposited epitaxial FeSe thin films clearly show a more favorable morphology. Optical microscopy, AFM and SEM demonstrate a smooth surface with segregations which are eliminated by proper choice of the deposition parameters.

  3. Electrical transport and magnetic properties of epitaxial LSMO films grown on STO substrates

    Science.gov (United States)

    Yuan, Wei; Zhao, Yuelei; Su, Tang; Song, Qi; Han, Wei; Shi, Jing

    2015-03-01

    La0.7Sr0.3MnO3 (LSMO) is a very attractive material for spintronics due to its half-metallic ferromagnetic properties. The LSMO films are epitaxially grown on STO (100) substrates using pulsed laser deposition. The effects of substrate temperature, laser power, oxygen pressure, and annealing on the LSMO growth are systematically investigated by the reflection high energy electron diffraction and atomic force microscopy. Under the optimized growth condition, we have achieved atomically flat LSMO thin films with a wide terrace width of more than 5 micro-meters. The electrical transport properties of LSMO thin films of various thicknesses ranging from 8 to 20 monolayers are studied by measuring the resistivity as a function of temperature. We find that the growth condition plays an important role in the critical film thickness for the metal-insulator transition and the Curie temperature. The Ministry of Science and Technology of China.

  4. High-quality AlN films grown on chemical vapor-deposited graphene films

    Directory of Open Access Journals (Sweden)

    Chen Bin-Hao

    2016-01-01

    Full Text Available We report the growth of high-quality AlN films on graphene. The graphene films were synthesized by CVD and then transferred onto silicon substrates. Epitaxial aluminum nitride films were deposited by DC magnetron sputtering on both graphene as an intermediate layer and silicon as a substrate. The structural characteristics of the AlN films and graphene were investigated. Highly c-axis-oriented AlN crystal structures are investigated based on the XRDpatterns observations.

  5. Graphitic carbon grown on fluorides by molecular beam epitaxy.

    Science.gov (United States)

    Jerng, Sahng-Kyoon; Lee, Jae Hong; Kim, Yong Seung; Chun, Seung-Hyun

    2013-01-03

    We study the growth mechanism of carbon molecules supplied by molecular beam epitaxy on fluoride substrates (MgF2, CaF2, and BaF2). All the carbon layers form graphitic carbon with different crystallinities depending on the cation. Especially, the growth on MgF2 results in the formation of nanocrystalline graphite (NCG). Such dependence on the cation is a new observation and calls for further systematic studies with other series of substrates. At the same growth temperature, the NCG on MgF2 has larger clusters than those on oxides. This is contrary to the general expectation because the bond strength of the carbon-fluorine bond is larger than that of the carbon-oxygen bond. Our results show that the growth of graphitic carbon does not simply depend on the chemical bonding between the carbon and the anion in the substrate.

  6. RBS study of in situ grown BiSrCaCuO films

    Energy Technology Data Exchange (ETDEWEB)

    Ranno, L.; Perriere, J.; Enard, J.P.; Kerherve, F.; Laurent, A.; Casero, R.P. (Paris-6 Univ., 75 (France). Lab. de Physique des Solides)

    1992-07-01

    BiSrCaCuO thin films have been grown in situ on MgO single crystals by pulsed laser deposition under 0.1 mbar oxygen pressure, the substrate temperature being around 700{sup o}C. These films are nearly pure 2212 phase, highly textured with a full c-axis orientation, and Rutherford backscattering spectrometry (RBS) in channeling geometry has been used to obtain precise information on their crystallinity. Although the X{sub min} values were found higher (about 35%) than those measured on bulk single crystals, they show partial epitaxy of the films, which was not observed with post annealed films. The comparison of backscattering yield in random and aligned orientations evidences the fact that all the cationic elements behave in a similar way in the channeling experiments, while differences are observed for the oxygen species according to their precise location in the network. These in situ grown films were found very sensitive to the ion irradiation, and showed a large dechanneling effect with increasing ion doses. (author).

  7. Yttria and ceria doped zirconia thin films grown by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Saporiti, F.; Juarez, R. E., E-mail: cididi@fi.uba.ar [Grupo de Materiales Avanzados, Facultad de Ingenieria, Universidad de Buenos Aires (Argentina); Audebert, F. [Consejo Nacional de Investigaciones Cientificas y Tecnicas (CONICET) (Argentina); Boudard, M. [Laboratoire des Materiaux et du Genie Physique (CNRS), Grenoble (France)

    2013-11-01

    The Yttria stabilized Zirconia (YSZ) is a standard electrolyte for solid oxide fuel cells (SOFCs), which are potential candidates for next generation portable and mobile power sources. YSZ electrolyte thin films having a cubic single phase allow reducing the SOFC operating temperature without diminishing the electrochemical power density. Films of 8 mol% Yttria stabilized Zirconia (8YSZ) and films with addition of 4 weight% Ceria (8YSZ + 4CeO{sub 2}) were grown by pulsed laser deposition (PLD) technique using 8YSZ and 8YSZ + 4CeO{sub 2} targets and a Nd-YAG laser (355 nm). Films have been deposited on Soda-Calcia-Silica glass and Si(100) substrates at room temperature. The morphology and structural characteristics of the samples have been studied by means of X-ray diffraction and scanning electron microscopy. Films of a cubic-YSZ single phase with thickness in the range of 1-3 Micro-Sign m were grown on different substrates (author)

  8. Group III-nitride thin films grown using MBE and bismuth

    Science.gov (United States)

    Kisielowski, Christian K.; Rubin, Michael

    2000-01-01

    The present invention comprises growing gallium nitride films in the presence of bismuth using MBE at temperatures of about 1000 K or less. The present invention further comprises the gallium nitride films fabricated using the inventive fabrication method. The inventive films may be doped with magnesium or other dopants. The gallium nitride films were grown on sapphire substrates using a hollow anode Constricted Glow Discharge nitrogen plasma source. When bismuth was used as a surfactant, two-dimensional gallium nitride crystal sizes ranging between 10 .mu.m and 20 .mu.m were observed. This is 20 to 40 times larger than crystal sizes observed when GaN films were grown under similar circumstances but without bismuth. It is thought that the observed increase in crystal size is due bismuth inducing an increased surface diffusion coefficient for gallium. The calculated value of 4.7.times.10.sup.-7 cm.sup.2 /sec. reveals a virtual substrate temperature of 1258 K which is 260 degrees higher than the actual one.

  9. Yttria and ceria doped zirconia thin films grown by pulsed laser deposition

    Directory of Open Access Journals (Sweden)

    F. Saporiti

    2013-06-01

    Full Text Available The Yttria stabilized Zirconia (YSZ is a standard electrolyte for solid oxide fuel cells (SOFCs, which are potential candidates for next generation portable and mobile power sources. YSZ electrolyte thin films having a cubic single phase allow reducing the SOFC operating temperature without diminishing the electrochemical power density. Films of 8 mol% Yttria stabilized Zirconia (8YSZ and films with addition of 4 weight% Ceria (8YSZ + 4CeO2 were grown by pulsed laser deposition (PLD technique using 8YSZ and 8YSZ + 4CeO2 targets and a Nd-YAG laser (355 nm. Films have been deposited on Soda-Calcia-Silica glass and Si(100 substrates at room temperature. The morphology and structural characteristics of the samples have been studied by means of X-ray diffraction and scanning electron microscopy. Films of a cubic-YSZ single phase with thickness in the range of 1-3 µm were grown on different substrates.

  10. Transmission electron microscopy study of as-grown MgB{sub 2} films

    Energy Technology Data Exchange (ETDEWEB)

    Takahashi, T. [Graduate School of Engineering, Iwate University, 4-3-5 Ueda, Morioka 020-8551 (Japan); Harada, Y. [Iwate Industry Promotion Center, 3-35-2 Iioka-shinden, Morioka 020-0852 (Japan)]. E-mail: yharada@luck.ocn.ne.jp; Iriuda, H. [Graduate School of Engineering, Iwate University, 4-3-5 Ueda, Morioka 020-8551 (Japan); Kuroha, M. [Graduate School of Engineering, Iwate University, 4-3-5 Ueda, Morioka 020-8551 (Japan); Oba, T. [Faculty of Materials science and Engineering, Iwate University, 4-3-5 Ueda, Morioka 020-8551 (Japan); Seki, M. [Faculty of Materials science and Engineering, Iwate University, 4-3-5 Ueda, Morioka 020-8551 (Japan); Nakanishi, Y. [Graduate School of Engineering, Iwate University, 4-3-5 Ueda, Morioka 020-8551 (Japan); Echigoya, J. [Faculty of Materials science and Engineering, Iwate University, 4-3-5 Ueda, Morioka 020-8551 (Japan); Yoshizawa, M. [Graduate School of Engineering, Iwate University, 4-3-5 Ueda, Morioka 020-8551 (Japan)

    2006-10-01

    The intermetallic superconductor magnesium diboride (MgB{sub 2}) is a promising candidate for use in superconducting electronic devices because of its high transition temperature (T{sub c}). These applications require the development of a high-quality film fabrication process. We have previously reported the growth of MgB{sub 2} films deposited on MgO (1 0 0), SrTiO{sub 3} (1 0 0) and Al{sub 2}O{sub 3} (0 0 0 1) substrate using a co-evaporation method and molecular beam epitaxy (MBE) apparatus. In this paper, we will report the correlation between structural properties and physical properties of as-grown MgB{sub 2} films deposited on MgO (1 0 0), ZnO (0 0 0 1), and Si (1 1 1) substrate. The films' basal properties have been confirmed by reflection high-energy electron diffraction (RHEED), X-ray diffraction (XRD), resistivity measurements and SQUID magnetometry. The details of the interfacial structure were studied by transmission electron microscopy (TEM). We will then discuss the most important parameters for fabricating high quality as-grown MgB{sub 2} films and junctions.

  11. YBa2Cu3O7 films grown by metal cosputtering

    Science.gov (United States)

    Steinberg, Richard N.; McCambridge, James D.; Prober, Daniel E.; Guenin, Bruce M.

    1992-04-01

    Superconducting YBa2Cu3O7 films have been grown in situ by simultaneously sputtering from Y, BaCu, and Cu targets. One advantage of such metal cosputtering is the higher deposition rate compared to oxide target sputtering. Another advantage is the ability to control the individual element rates to vary composition or to substitute for any of the metals without interrupting film growth and without making additional composite targets. To prevent film damage due to oxygen ion bombardment during film growth which was observed when the sputter guns faced the substrate (on-axis sputtering), an off-axis geometry was used. One disadvantage we found with in situ metal cosputtering was that reproducibility of stoichiometries was difficult because of the presence of oxygen at the targets. To minimize the oxygen partial pressure at the targets during sputtering, the chamber was differentially pumped. Films grown in the off-axis geometry with a substrate temperature near 700 °C, a chamber pressure of 7.5 mT, and an O2:Ar flow ratio of 1:50 had zero resistance at 85 K. Results for on-axis, composite target magnetron sputtering with a high-strength magnet are also presented. These results are not promising.

  12. Thin films of copper oxide and copper grown by atomic layer deposition for applications in metallization systems of microelectronic devices

    Energy Technology Data Exchange (ETDEWEB)

    Waechtler, Thomas

    2010-05-25

    Copper-based multi-level metallization systems in today's ultralarge-scale integrated electronic circuits require the fabrication of diffusion barriers and conductive seed layers for the electrochemical metal deposition. Such films of only several nanometers in thickness have to be deposited void-free and conformal in patterned dielectrics. The envisaged further reduction of the geometric dimensions of the interconnect system calls for coating techniques that circumvent the drawbacks of the well-established physical vapor deposition. The atomic layer deposition method (ALD) allows depositing films on the nanometer scale conformally both on three-dimensional objects as well as on large-area substrates. The present work therefore is concerned with the development of an ALD process to grow copper oxide films based on the metal-organic precursor bis(trin- butylphosphane)copper(I)acetylacetonate [({sup n}Bu{sub 3}P){sub 2}Cu(acac)]. This liquid, non-fluorinated {beta}-diketonate is brought to react with a mixture of water vapor and oxygen at temperatures from 100 to 160 C. Typical ALD-like growth behavior arises between 100 and 130 C, depending on the respective substrate used. On tantalum nitride and silicon dioxide substrates, smooth films and selfsaturating film growth, typical for ALD, are obtained. On ruthenium substrates, positive deposition results are obtained as well. However, a considerable intermixing of the ALD copper oxide with the underlying films takes place. Tantalum substrates lead to a fast self-decomposition of the copper precursor. As a consequence, isolated nuclei or larger particles are always obtained together with continuous films. The copper oxide films grown by ALD can be reduced to copper by vapor-phase processes. If formic acid is used as the reducing agent, these processes can already be carried out at similar temperatures as the ALD, so that agglomeration of the films is largely avoided. Also for an integration with subsequent

  13. Non-destructive characterization of films grown on Zircaloy-2 by annealing in air

    Energy Technology Data Exchange (ETDEWEB)

    McNatt, J.S.; Shepard, M.J.; Farkas, N.; Morgan, J.M.; Ramsier, R.D. [Departments of Physics, Chemistry, and Chemical Engineering, University of Akron, Akron, OH (United States)]. E-mail: rex@uakron.edu

    2002-08-07

    Zircaloy-2 is often used in engineering applications because of its corrosion resistance; a property attributable to a protective oxide film that grows on its surface. Variable angle infrared (IR) reflection spectroscopy and atomic force microscopy are used to determine the thickness and roughness of such films grown thermally on Zircaloy-2 surfaces in air. We find cubic growth kinetics in the temperature range 500-600 deg. C with an apparent activation energy of 227 kJ mol{sup -1}. We also demonstrate how an increase in microscopic surface roughness at higher temperatures correlates with a loss of oxide homogeneity as sampled by the IR method. (author)

  14. Solution-Grown Monocrystalline Hybrid Perovskite Films for Hole-Transporter-Free Solar Cells

    KAUST Repository

    Peng, Wei

    2016-03-02

    High-quality perovskite monocrystalline films are successfully grown through cavitation-triggered asymmetric crystallization. These films enable a simple cell structure, ITO/CH3NH3PbBr3/Au, with near 100% internal quantum efficiency, promising power conversion efficiencies (PCEs) >5%, and superior stability for prototype cells. Furthermore, the monocrystalline devices using a hole-transporter-free structure yield PCEs ≈6.5%, the highest among other similar-structured CH3NH3PbBr3 solar cells to date.

  15. [Raman spectra studies of MBE-grown n-GaAs/SI-GaAs films].

    Science.gov (United States)

    Wang, Bin; Xu, Xiao-xuan; Qin, Zhe; Song, Ning; Zhang, Cun-zhou

    2008-09-01

    n-GaAs films doped with Si were grown by MBE on semi-insulated GaAs (100) substrates. The films with different doping concents were characterized by Raman spectra at room temperature. It is obviously that the Raman peaks shifted. Some peaks were enhanced and some were weakened. This is attributed to the fact that the higher the doping contents, the highertge lattice mismatch. And the lattice misfit induced the imperfection in epitaxy layers. This experimental result coincides with the theory.

  16. Surface organization of homoepitaxial InP films grown by metalorganic vapor-phase epitaxy

    OpenAIRE

    Gocalinska, A.; Manganaro, M.; Vvedensky, D. D.; Pelucchi, E.

    2012-01-01

    We present a systematic study of the morphology of homoepitaxial InP films grown by metalorganic vapor-phase epitaxy which are imaged with ex situ atomic force microscopy. These films show a dramatic range of different surface morphologies as a function of the growth conditions and substrate (growth temperature, V/III ratio, and miscut angle < 0.6deg and orientation toward A or B sites), ranging from stable step flow to previously unreported strong step bunching, over 10 nm in height. These o...

  17. Irradiation induced improvement in crystallinity of epitaxially grown Ag thin films on Si substrates

    Energy Technology Data Exchange (ETDEWEB)

    Takahiro, Katsumi; Nagata, Shinji; Yamaguchi, Sadae [Tohoku Univ., Sendai (Japan). Inst. for Materials Research

    1997-03-01

    We report the improvement in crystallinity of epitaxially grown Ag films on Si(100) substrates with ion irradiation. The irradiation of 0.5 MeV Si ions to 2x10{sup 16}/cm{sup 2} at 200degC, for example, reduces the channeling minimum yield from 60% to 6% at Ag surface. The improvement originates from the decrease of mosaic spread in the Ag thin film. In our experiments, ion energy, ion species and irradiation temperature have been varied. The better crystallinity is obtained as the higher concentration of defect is generated. The mechanism involved in the irradiation induced improvement is discussed. (author)

  18. Stress, structural and electrical properties of Si-doped GaN film grown by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Xu Zhihao; Zhang Jincheng; Duan Huantao; Zhang Zhongfen; Zhu Qingwei; Xu Hao; Hao Yue, E-mail: forman1115@163.co [Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi' an 710071 (China)

    2009-12-15

    The stresses, structural and electrical properties of n-type Si-doped GaN films grown by metalorganic chemical vapor deposition (MOCVD) are systemically studied. It is suggested that the main stress relaxation is induced by bending dislocations in low doping samples. But for higher doping samples, as the Si doping concentration increases, the in-plane stresses in the grown films are quickly relaxed due to the rapid increase of the edge dislocation densities. Hall effect measurements reveal that the carrier mobility first increases rapidly and then decreases with increasing Si doping concentration. This phenomenon is attributed to the interaction between various scattering process. It is suggested that the dominant scattering process is defect scattering for low doping samples and ionized impurity scattering for high doping samples. (semiconductor materials)

  19. Roughness of CdTe thin films grown on glass by hot wall epitaxy.

    Science.gov (United States)

    Leal, F F; Ferreira, S O; Menezes-Sobrinho, I L; Faria, T E

    2005-01-12

    Cadmium telluride films were grown on glass substrates using the hot wall epitaxy (HWE) technique. The samples were polycrystalline with a preferential (111) orientation. Scanning electron micrographs reveal a grain size between 0.1 and 0.5 µm. The surface morphology of the samples was studied by measuring the roughness profile using a stylus profiler. The roughness as a function of growth time and scale size were investigated to determine the growth and roughness exponents, β and α, respectively. From the results we can conclude that the growth surface has a self-affine character with a roughness exponent α equal to 0.69 ± 0.03 and almost independent of growth time. The growth exponent β was equal to 0.38 ± 0.06. These values agree with that determined previously for CdTe(111) films grown on GaAs(100).

  20. Stress, structural and electrical properties of Si-doped GaN film grown by MOCVD

    Institute of Scientific and Technical Information of China (English)

    Xu Zhihao; Zhang Jincheng; Duan Huantao; Zhang Zhongfen; Zhu Qingwei; Xu Hao; Hao Yue

    2009-01-01

    The stresses, structural and electrical properties of n-type Si-doped GaN films grown by metalorganic chemical vapor deposition (MOCVD) are systemically studied. It is suggested that the main stress relaxation is induced by bending dislocations in low doping samples. But for higher doping samples, as the Si doping concentration increases, the in-plane stresses in the grown films are quickly relaxed due to the rapid increase of the edge dislocation densities. Hall effect measurements reveal that the carrier mobility first increases rapidly and then decreases with increasing Si doping concentration. This phenomenon is attributed to the interaction between various scattering process. It is suggested that the dominant scattering process is defect scattering for low doping samples and ionized impurity scattering for high doping samples.

  1. Buckling instability in amorphous carbon films

    Science.gov (United States)

    Zhu, X. D.; Narumi, K.; Naramoto, H.

    2007-06-01

    In this paper, we report the buckling instability in amorphous carbon films on mirror-polished sapphire (0001) wafers deposited by ion beam assisted deposition at various growth temperatures. For the films deposited at 150 °C, many interesting stress relief patterns are found, which include networks, blisters, sinusoidal patterns with π-shape, and highly ordered sinusoidal waves on a large scale. Starting at irregular buckling in the centre, the latter propagate towards the outer buckling region. The maximum length of these ordered patterns reaches 396 µm with a height of ~500 nm and a wavelength of ~8.2 µm. However, the length decreases dramatically to 70 µm as the deposition temperature is increased to 550 °C. The delamination of the film appears instead of sinusoidal waves with a further increase of the deposition temperature. This experimental observation is correlated with the theoretic work of Crosby (1999 Phys. Rev. E 59 R2542).

  2. Superior Thermal Interface via Vertically Aligned Carbon Nanotubes Grown on Graphite Foils

    Science.gov (United States)

    2012-01-01

    L.L. Zhang, Z. Xiong, and X.S. Zhao: Pillaring chemically exfoliated graphene oxide with carbon nanotubes for photocatalytic degrada- tion of dyes...and V.T. Renard: Few graphene layers/carbon nanotube composites grown at complimentary-metal-oxide- semiconductor compatible temper- ature. Appl

  3. Carbon Nanofibers Grown on Large Woven Cloths: Morphology and Properties of Growth

    NARCIS (Netherlands)

    Koissin, Vitaly; Bor, Ton; Kotanjac, Zeljko; Lefferts, Leon; Warnet, Laurent; Akkerman, Remko

    2016-01-01

    The morphology and chemical composition of carbon nanofibers in situ grown on a large carbon-fiber woven fabric are studied using SEM measurements, X-ray Diffraction, X-ray Flourescence, and X-ray Photoelectron Spectroscopy. Results show that nanofibers can have a density and a morphology potentiall

  4. Influence of Substrate-Film Reactions on YBCO Grown by Fluorine-Free MOD Route

    DEFF Research Database (Denmark)

    Zhao, Yue; Tang, Xiao; Wu, W.;

    2017-01-01

    Recently, fluorine-free metal organic deposition routes (FF-MOD) for growth of YBCO superconducting films have attracted increased attentions. In this paper, a comparison study was performed on the YBCO-Ag superconducting thin films deposited on two types substrates, LaAlO3 and CSD-Ce0.9La0.1O2-y...... (CLO)/YSZ, respectively. Although conventional TFA-MOD derived YBCO films exhibit high performance on both substrates, the results vary when using the FF-MOD precursor. SEM and XRD results reveal that c-axis and a/b-axis orientations coexist in the YBCO-Ag films grown on the CSD-CLO/YSZ substrate...... deposited by the FF-MOD route, while the BaCeO3 by-product is a dominating phase in the fully reacted film. Based on the structural analysis of the partially converted films, we found that interfacial reactions between the film and the CLO cap layer play an essential role on the epitaxial growth of YBCO...

  5. Photoinduced Br Desorption from CsBr Thin Films Grown on Cu(100)

    Energy Technology Data Exchange (ETDEWEB)

    Halliday, Matthew T.; Joly, Alan G.; Hess, Wayne P.; Shluger, AL

    2015-10-22

    Thin films of CsBr deposited onto metals such as copper are potential photocathode materials for light sources and other applications. We investigate desorption dynamics of Br atoms from CsBr films grown on insulator (KBr, LiF) and metal (Cu) substrates induced by sub-bandgap 6.4 eV laser pulses. The experimental results demonstrate that the peak kinetic energy of Br atoms desorbed from CsBr/Cu films is much lower than that for the hyperthermal desorption from CsBr/LiF films. Kelvin probe measurements indicate negative charge at the surface following Br desorption from CsBr/Cu films. Our ab initio calculations of excitons at CsBr surfaces demonstrate that this behavior can be explained by an exciton model of desorption including electron trapping at the CsBr surface. Trapped negative charges reduce the energy of surface excitons available for Br desorption. We examine the electron-trapping characteristics of low-coordinated sites at the surface, in particular, divacancies and kink sites. We also provide a model of cation desorption caused by Franck-Hertz excitation of F centers at the surface in the course of irradiation of CsBr/Cu films. These results provide new insights into the mechanisms of photoinduced structural evolution of alkali halide films on metal substrates and activation of metal photocathodes coated with CsBr.

  6. Structural and electrical properties of large area epitaxial VO2 films grown by electron beam evaporation

    Science.gov (United States)

    Théry, V.; Boulle, A.; Crunteanu, A.; Orlianges, J. C.; Beaumont, A.; Mayet, R.; Mennai, A.; Cosset, F.; Bessaudou, A.; Fabert, M.

    2017-02-01

    Large area (up to 4 squared inches) epitaxial VO2 films, with a uniform thickness and exhibiting an abrupt metal-insulator transition with a resistivity ratio as high as 2.85 × 10 4 , have been grown on (001)-oriented sapphire substrates by electron beam evaporation. The lattice distortions (mosaicity) and the level of strain in the films have been assessed by X-ray diffraction. It is demonstrated that the films grow in a domain-matching mode where the distortions are confined close to the interface which allows growth of high-quality materials despite the high film-substrate lattice mismatch. It is further shown that a post-deposition high-temperature oxygen annealing step is crucial to ensure the correct film stoichiometry and provide the best structural and electrical properties. Alternatively, it is possible to obtain high quality films with a RF discharge during deposition, which hence do not require the additional annealing step. Such films exhibit similar electrical properties and only slightly degraded structural properties.

  7. Chemical resistance of thin film materials based on metal oxides grown by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Sammelselg, Väino, E-mail: vaino.sammelselg@ut.ee [Institute of Physics, University of Tartu, Riia 142, 51014 Tartu (Estonia); Institute of Chemistry, University of Tartu, Ravila 14a, 50411 Tartu (Estonia); Netšipailo, Ivan; Aidla, Aleks; Tarre, Aivar; Aarik, Lauri; Asari, Jelena; Ritslaid, Peeter; Aarik, Jaan [Institute of Physics, University of Tartu, Riia 142, 51014 Tartu (Estonia)

    2013-09-02

    Etching rate of technologically important metal oxide thin films in hot sulphuric acid was investigated. The films of Al-, Ti-, Cr-, and Ta-oxides studied were grown by atomic layer deposition (ALD) method on silicon substrates from different precursors in large ranges of growth temperatures (80–900 °C) in order to reveal process parameters that allow deposition of coatings with higher chemical resistance. The results obtained demonstrate that application of processes that yield films with lower concentration of residual impurities as well as crystallization of films in thermal ALD processes leads to significant decrease of etching rate. Crystalline films of materials studied showed etching rates down to values of < 5 pm/s. - Highlights: • Etching of atomic layer deposited thin metal oxide films in hot H{sub 2}SO{sub 4} was studied. • Smallest etching rates of < 5 pm/s for TiO{sub 2}, Al{sub 2}O{sub 3}, and Cr{sub 2}O{sub 3} were reached. • Highest etching rate of 2.8 nm/s for Al{sub 2}O{sub 3} was occurred. • Remarkable differences in etching of non- and crystalline films were observed.

  8. Differential carotenoid production and gene expression in Xanthophyllomyces dendrorhous grown in a nonfermentable carbon source.

    Science.gov (United States)

    Wozniak, Aniela; Lozano, Carla; Barahona, Salvador; Niklitschek, Mauricio; Marcoleta, Andrés; Alcaíno, Jennifer; Sepulveda, Dionisia; Baeza, Marcelo; Cifuentes, Víctor

    2011-05-01

    Xanthophyllomyces dendrorhous is a basidiomycetous yeast of considerable biotechnological interest because it synthesizes astaxanthin as its main carotenoid. The carotenoid production increases when it is grown using nonfermentable compounds as the sole carbon source. This work analyzes the expression of the carotenogenic genes and their relationship with the amount and types of carotenoids produced when X. dendrorhous is grown using a nonfermentable (succinate) or a fermentable carbon source (glucose). When X. dendrorhous is grown in succinate, carotenoid production is approximately three times higher than when it is grown in glucose. Moreover, carotenoid biosynthesis occurs at the start of the growth cycle when X. dendrorhous is grown in succinate, whereas when it is grown in glucose, carotenoids are produced at the end of the exponential phase. Additionally, we observed that some carotenogenic genes, such as alternative transcripts of crtYB and crtI, are differentially expressed when the yeast is grown in these carbon sources; other genes, such as crtS, exhibit a similar pattern of expression. Our data indicate that transcriptional regulation is not sufficient to explain the differences in carotenoid production between the two culture conditions, indicating that additional regulatory mechanisms may be operating in the carotenogenic pathway of X. dendrorhous.

  9. Hybrid Graphene and Single-Walled Carbon Nanotube Films for Enhanced Phase-Change Heat Transfer.

    Science.gov (United States)

    Seo, Han; Yun, Hyung Duk; Kwon, Soon-Yong; Bang, In Cheol

    2016-02-10

    Nucleate boiling is an effective heat transfer method in power generation systems and cooling devices. In this letter, hybrid graphene/single-walled carbon nanotube (SWCNT), graphene, and SWCNT films deposited on indium tin oxide (ITO) surfaces were fabricated to investigate the enhancement of nucleate boiling phenomena described by the critical heat flux and heat transfer coefficient. The graphene films were grown on Cu foils and transferred to ITO surfaces. Furthermore, SWCNTs were deposited on the graphene layer to fabricate hybrid graphene/SWCNT films. We determined that the hybrid graphene/SWCNT film deposited on an ITO surface is the most effective heat transfer surface in pool boiling because of the interconnected network of carbon structures.

  10. Surface state conductivity in epitaxially grown Bi1-x Sb x (111) films

    Science.gov (United States)

    Koch, Julian; Kröger, Philipp; Pfnür, Herbert; Tegenkamp, Christoph

    2016-09-01

    Topologically non-trivial surface states were reported first on {{Bi}}1-xSb x bulk crystals. In this study we present transport measurements performed on thin {{Bi}}1-xSb x -films (up to 24 nm thickness) grown epitaxially on Si(111) with various Sb-concentrations (up to x = 0.22). The analysis of the temperature dependency allowed us to distinguish between different transport channels originating from surface and bulk bands as well as impurity states. At temperatures below 30 K the transport is mediated by surface states while at higher temperatures activated transport via bulk channels sets in. The surface state conductivity and bulk band gaps can be tuned by the Sb-concentration and film thickness, respectively. For films as thin as 4 nm the surface state transport is strongly suppressed in contrast to Bi(111) films grown under identical conditions. The impurity channel is of intrinsic origin due to the growth and alloy formation process and turns out to be located at the buried interface.

  11. Structural and electrical properties of tantalum oxide films grown by photo-assisted pulsed laser deposition

    Science.gov (United States)

    Zhang, Jun-Ying; Boyd, Ian W.

    2002-01-01

    We describe the growth of thin films of Ta 2O 5 on quartz and silicon (1 0 0) substrates by an in situ photo-assisted pulsed laser deposition (photo-PLD) using radiation from a Nd:YAG laser (wavelength, λ=532 nm) to stimulate the ablation, and from an excimer lamp to excite additional photochemistry. The layers grown were investigated by Fourier transform infrared (FT-IR) spectroscopy, UV spectrophotometry, atomic force microscopy (AFM), ellipsometry and electrical measurements. We have found that they exhibit a significant improvement in microstructure, and optical and electrical properties compared with conventional PLD films prepared under, otherwise, identical conditions. For example, FT-IR results showed that the suboxide content in the as-grown films deposited by the photo-PLD process is less, while the leakage current density was an order of magnitude less at around 10 -6 A/cm 2 at a bias of 1 V. These results indicate that this photo-PLD process approach can be advantageous for dielectric and optical oxide film growth.

  12. Influence of solution viscosity on hydrothermally grown ZnO thin films for DSSC applications

    Science.gov (United States)

    Marimuthu, T.; Anandhan, N.; Thangamuthu, R.; Surya, S.

    2016-10-01

    Zinc oxide (ZnO) nanowire arrays (NWAs) were grown onto zinc oxide-titanium dioxide (ZnO-TiO2) seeded fluorine doped tin oxide (FTO) conductive substrate by hydrothermal technique. X-ray diffraction (XRD) patterns depict that ZnO thin films are preferentially oriented along the (002) plane with hexagonal wurtzite structure. Viscosity measurements reveal that viscosity of the solutions linearly increases as the concentrations of the polyvinyl alcohol (PVA) increase in the growth solution. Field emission scanning electron microscope (FE-SEM) images show that the NWAs are vertically grown to seeded FTO substrate with hexagonal structure, and the growth of NWAs decreases as the concentration of the PVA increases. Stylus profilometer and atomic force microscopic (AFM) studies predict that the thickness and roughness of the films decrease with increasing the PVA concentrations. The NWAs prepared at 0.1% of PVA exhibits a lower transmittance and higher absorbance than that of the other films. The band gap of the optimized films prepared at 0.0 and 0.1% of PVA is found to be 3.270 and 3.268 eV, respectively. The photo to current conversion efficiency of the DSSC based on photoanodes prepared at 0.0 and 0.1% of PVA exhibits about 0.64 and 0.82%, respectively. Electrochemical impedance spectra reveal that the DSSC based on photoanode prepared at 0.1% of PVA has the highest charge transfer recombination resistance.

  13. Characterizations of Cubic ZnMgO Films Grown on Si(111) at Low Substrate Temperature

    Institute of Scientific and Technical Information of China (English)

    邱东江; 吴惠桢; 陈乃波; 徐天宁

    2003-01-01

    Cubic ZnMgO thin films in the (100) orientation were grown on Si (111) substrates by reactive electron beamevaporation at low substrate temperature. X-ray photoelectron spectroscopy (XPS) analyses show that Mgcontent as high as 75 at.% in the cubic ZnMgO film can be obtained. Secondary ion mass spectroscopy (SIMS)measurement indicates the evidence of Mg richness in the interface between the ZnMgO film and the Si substrate,and it is probably the primary reason to form the MgO-like cubic ZnMgO structures rather than the wurtziteone. The optical band gap of cubic ZnMgO is estimated to be 5.76eV, which was measured by the transmissionspectrum of the cubic ZnMgO film grown on the sapphire substrate under the same growth condition with thaton Si (111). The band gap is of 2.39eV blueshifted compared with that of ZnO (3.37eV), which should renderapplications in the fabrication of ZnMgO-related heterostructures.

  14. Carbide Identification in Different Regions of a Thin Metal Film Covering on an HPHT As-Grown Diamond Single Crystal from Ni-Mn-C System

    Institute of Scientific and Technical Information of China (English)

    XU Bin; CUI Jian-Jun; LI Mu-Sen; LI Cheng-Mei; CHU Fu-Min; FENG Li-Ming

    2005-01-01

    @@ Diamond single crystals were synthesized in the presence of Ni-Mn catalyst under high temperature and high pressure (HPHT). A thin metal film covering on as-grown diamond formed during diamond growth was examined using transmission electron microscopy. It was shown that phase compositions of the region near the as-grown diamond are different from those of other regions in the film. We found γ-(Ni,Mn) solid solution, diamond, Ni3C and Mn23C6 in the region near the as-grown diamond, while graphite, Mn7C3 and γ-(Ni,Mn) could be found in other regions of the film. The relationship between the diamond growth and the carbides in the film was analysed briefly. It is suggested that the carbon source for diamond growth should be closely related to the decomposition of carbides in the region near the diamond single crystal at HPHT, not being directly from that of the graphite structure.

  15. RAPID COMMUNICATION: ? thin film bilayers grown by pulsed laser ablation deposition

    Science.gov (United States)

    Singh, S. K.; Palmer, S. B.; McK Paul, D.; Lees, M. R.

    1996-09-01

    We have grown superconducting thin films of 0022-3727/29/9/044/img2 (Y-123) on 0022-3727/29/9/044/img3 (PCMO) buffer layers and PCMO overlayers on Y-123 thin films using pulsed laser ablation deposition. For both sets of films below 50 K, the Y-123 layer is superconducting and the zero-field cooled PCMO layer is insulating. The application of a magnetic field of 8 T results in an insulator - metal transition in the PCMO layer. This field-induced conducting state is stable in zero magnetic field at low temperature. The PCMO layer can be returned to an insulating state by annealing above 100 K. This opens the way for the construction of devices incorporating these oxide materials in which the electronic properties of key components such as the substrate or the barrier layer can be switched in a controlled way by the application of a magnetic field.

  16. Biomolecular papain thin films grown by matrix assisted and conventional pulsed laser deposition: A comparative study

    Science.gov (United States)

    György, E.; Pérez del Pino, A.; Sauthier, G.; Figueras, A.

    2009-12-01

    Biomolecular papain thin films were grown both by matrix assisted pulsed laser evaporation (MAPLE) and conventional pulsed laser deposition (PLD) techniques with the aid of an UV KrF∗ (λ =248 nm, τFWHM≅20 ns) excimer laser source. For the MAPLE experiments the targets submitted to laser radiation consisted on frozen composites obtained by dissolving the biomaterial powder in distilled water at 10 wt % concentration. Conventional pressed biomaterial powder targets were used in the PLD experiments. The surface morphology of the obtained thin films was studied by atomic force microscopy and their structure and composition were investigated by Fourier transform infrared spectroscopy. The possible physical mechanisms implied in the ablation processes of the two techniques, under comparable experimental conditions were identified. The results showed that the growth mode, surface morphology as well as structure of the deposited biomaterial thin films are determined both by the incident laser fluence value as well as target preparation procedure.

  17. Photoluminescence properties of MgxZn1-xO films grown by molecular beam epitaxy

    Science.gov (United States)

    Wu, T. Y.; Huang, Y. S.; Hu, S. Y.; Lee, Y. C.; Tiong, K. K.; Chang, C. C.; Chou, W. C.; Shen, J. L.

    2017-02-01

    The optical properties of MgxZn1-xO films with x=0.03, 0.06, 0.08, and 0.11 grown by molecular beam epitaxy (MBE) have been studied by temperature-dependent photoluminescence (PL) measurement. It is presented that the full-width at half-maximum (FWHM) of the 12 K PL spectrum of MgZnO films increases with increasing Mg concentration and would deviate significantly from the simulation curve of Schubert model with higher Mg contents. The abnormal broader PL FWHM is inferred from larger compositional fluctuation by incorporating higher Mg contents, which results in larger effect of excitonic localization to induce more significant S-shaped behavior of the PL peak energy with temperature dependence. Additionally, the degree of localization increases as the linear proportion of the PL FWHM, indicating that the excitonic behavior in MgZnO films belong to the strong localization effect.

  18. Thin film phase diagram of iron nitrides grown by molecular beam epitaxy

    Science.gov (United States)

    Gölden, D.; Hildebrandt, E.; Alff, L.

    2017-01-01

    A low-temperature thin film phase diagram of the iron nitride system is established for the case of thin films grown by molecular beam epitaxy and nitrided by a nitrogen radical source. A fine-tuning of the nitridation conditions allows for growth of α ‧ -Fe8Nx with increasing c / a -ratio and magnetic anisotropy with increasing x until almost phase pure α ‧ -Fe8N1 thin films are obtained. A further increase of nitrogen content below the phase decomposition temperature of α ‧ -Fe8N (180 °C) leads to a mixture of several phases that is also affected by the choice of substrate material and symmetry. At higher temperatures (350 °C), phase pure γ ‧ -Fe4N is the most stable phase.

  19. Molecular-Beam Epitaxially Grown MgB2 Thin Films and Superconducting Tunnel Junctions

    Directory of Open Access Journals (Sweden)

    Jean-Baptiste Laloë

    2011-01-01

    Full Text Available Since the discovery of its superconducting properties in 2001, magnesium diboride has generated terrific scientific and engineering research interest around the world. With a of 39 K and two superconducting gaps, MgB2 has great promise from the fundamental point of view, as well as immediate applications. Several techniques for thin film deposition and heterojunction formation have been established, each with its own advantages and drawbacks. Here, we will present a brief overview of research based on MgB2 thin films grown by molecular beam epitaxy coevaporation of Mg and B. The films are smooth and highly crystalline, and the technique allows for virtually any heterostructure to be formed, including all-MgB2 tunnel junctions. Such devices have been characterized, with both quasiparticle and Josephson tunneling reported. MgB2 remains a material of great potential for a multitude of further characterization and exploration research projects and applications.

  20. Lithium outdiffusion in LiTi2O4 thin films grown by pulsed laser deposition

    Science.gov (United States)

    Mesoraca, S.; Kleibeuker, J. E.; Prasad, B.; MacManus-Driscoll, J. L.; Blamire, M. G.

    2016-11-01

    We report surface chemical cation composition analysis of high quality superconducting LiTi2O4 thin films, grown epitaxially on MgAl2O4 (111) substrates by pulsed laser deposition. The superconducting transition temperature of the films was 13.8 K. Surface chemical composition is crucial for the formation of a good metal/insulator interface for integrating LiTi2O4 into full-oxide spin-filtering devices in order to minimize the formation of structural defects and increase the spin polarisation efficiency. In consideration of this, we report a detailed angle resolved x-ray photoelectron spectroscopy analysis. Results show Li segregation at the surface of LiTi2O4 films. We attribute this process due to outdiffusion of Li toward the outermost LiTi2O4 layers.

  1. Preparation and structural properties of YBCO films grown on GaN/c-sapphire hexagonal substrate

    Energy Technology Data Exchange (ETDEWEB)

    Chromik, S., E-mail: stefan.chromik@savba.sk [Institute of Electrical Engineering, SAS, Dubravska cesta 9, 84104 Bratislava (Slovakia); Gierlowski, P. [Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw (Poland); Spankova, M.; Dobrocka, E.; Vavra, I.; Strbik, V.; Lalinsky, T.; Sojkova, M. [Institute of Electrical Engineering, SAS, Dubravska cesta 9, 84104 Bratislava (Slovakia); Liday, J.; Vogrincic, P. [Department of Microelectronics, Slovak Technical University, Ilkovicova 3, 81219 Bratislava (Slovakia); Espinos, J.P. [Instituto de Ciencia de Materiales de Sevilla, Avda Americo Vespucio 49, 41092 Sevilla (Spain)

    2010-07-01

    Epitaxial YBCO thin films have been grown on hexagonal GaN/c-sapphire substrates using DC magnetron sputtering and pulsed laser deposition. An MgO buffer layer has been inserted between the substrate and the YBCO film as a diffusion barrier. X-ray diffraction analysis indicates a c-axis oriented growth of the YBCO films. {Phi}-scan shows surprisingly twelve maxima. Transmission electron microscopy analyses confirm an epitaxial growth of the YBCO blocks with a superposition of three a-b YBCO planes rotated by 120 deg. to each other. Auger electron spectroscopy and X-ray photoelectron spectroscopy reveal no surface contamination with Ga even if a maximum substrate temperature of 700 deg. C is applied.

  2. Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends

    Science.gov (United States)

    Miikkulainen, Ville; Leskelä, Markku; Ritala, Mikko; Puurunen, Riikka L.

    2013-01-01

    Atomic layer deposition (ALD) is gaining attention as a thin film deposition method, uniquely suitable for depositing uniform and conformal films on complex three-dimensional topographies. The deposition of a film of a given material by ALD relies on the successive, separated, and self-terminating gas-solid reactions of typically two gaseous reactants. Hundreds of ALD chemistries have been found for depositing a variety of materials during the past decades, mostly for inorganic materials but lately also for organic and inorganic-organic hybrid compounds. One factor that often dictates the properties of ALD films in actual applications is the crystallinity of the grown film: Is the material amorphous or, if it is crystalline, which phase(s) is (are) present. In this thematic review, we first describe the basics of ALD, summarize the two-reactant ALD processes to grow inorganic materials developed to-date, updating the information of an earlier review on ALD [R. L. Puurunen, J. Appl. Phys. 97, 121301 (2005)], and give an overview of the status of processing ternary compounds by ALD. We then proceed to analyze the published experimental data for information on the crystallinity and phase of inorganic materials deposited by ALD from different reactants at different temperatures. The data are collected for films in their as-deposited state and tabulated for easy reference. Case studies are presented to illustrate the effect of different process parameters on crystallinity for representative materials: aluminium oxide, zirconium oxide, zinc oxide, titanium nitride, zinc zulfide, and ruthenium. Finally, we discuss the general trends in the development of film crystallinity as function of ALD process parameters. The authors hope that this review will help newcomers to ALD to familiarize themselves with the complex world of crystalline ALD films and, at the same time, serve for the expert as a handbook-type reference source on ALD processes and film crystallinity.

  3. Photoelectrochemical cell using dye sensitized zinc oxide nanowires grown on carbon fibers

    Science.gov (United States)

    Unalan, Husnu Emrah; Wei, Di; Suzuki, Kenichi; Dalal, Sharvari; Hiralal, Pritesh; Matsumoto, Hidetoshi; Imaizumi, Shinji; Minagawa, Mie; Tanioka, Akihiko; Flewitt, Andrew J.; Milne, William I.; Amaratunga, Gehan A. J.

    2008-09-01

    Zinc oxide (ZnO) nanowires (NWs) grown on carbon fibers using a vapor transport and condensation approach are used as the cathode of a photoelectrochemical cell. The carbon fibers were obtained by electrospray deposition and take the form of a flexible carbon fabric. The ZnO NW on carbon fiber anode is combined with a "black dye" photoabsorber, an electrolyte, and a platinum (Pt) counterelectrode to complete the cell. The results show that ZnO NW and carbon fibers can be used for photoinduced charge separation/charge transport and current collection, respectively, in a photoelectrochemical cell.

  4. Polycrystalline GaSb thin films grown by co-evaporation

    Institute of Scientific and Technical Information of China (English)

    Qiao Zaixiang; Sun Yun; He Weiyu; He Qing; Li Changjian

    2009-01-01

    We report optical and electrical properties of polycrystalline GaSb thin films which were successfully grown by co-evaporation on soda-lime glass substrates. The thin films have preferential orientation of the (111)direction. SEM results indicate that the average grain size of GaSb thin film is 500 nm with the substrate temperature of 560 ℃. The average reflectance of GaSb thin film is about 30% and the absorption coefficient is of the order of 104 cm-1. The optical bandgap of GaSb thin film is 0.726 eV. The hole concentration shows a clear increasing trend as the Ga-evaporation-temperature/Sb-evaporation-temperature (TGa/TSb) ratio increases. When the Ga crucible temperature is 810 ℃ and the antinomy crucible temperature is 415 ℃, the hole concentration of polycrystalline GaSb is 2 x 1017 cm-3 and the hole mobility is 130 cm2/(V-s). These results suggest that polycrystalline GaSb thin film is a good candidate for the use as a cheap material in TPV cells.

  5. Preparation and chemical characterization of neodymium-doped molybdenum oxide films grown using spray pyrolysis

    Energy Technology Data Exchange (ETDEWEB)

    Alfonso, J. E. [Universidad Nacional de Colombia, Departamento de Fisica, Grupo de Ciencia Materiales y Superficies, AA 5997 Bogota DC (Colombia); Moreno, L. C., E-mail: jealfonsoo@unal.edu.co [Universidad Nacional de Colombia, Departamento de Quimica, AA 5997 Bogota DC (Colombia)

    2014-07-01

    We studied the crystalline, morphology, and surface composition of Nd-doped molybdenum oxide films grown on glass slides through spray pyrolysis. After fabrication, the films were subjected to thermal treatment in oxygen for periods ranging from 2 to 20 hours. The films were structurally characterized though X-ray diffraction (XRD), their bulk chemical composition was determined using Energy-Dispersive X-ray analysis (EDX), and their surface composition was determined using X-ray Photoelectron Spectroscopy (XP S). The XRD results show that the films obtained from different dissolution volumes and at substrate temperature of 300 grades C exhibit the characteristics of the oxygen-deficient molybdenum trioxide Mo{sub 9}O{sub 26} phase. The films subjected to different thermal treatments exhibit a mixture of Mo{sub 9}O{sub 26} and Mo{sub 17}O{sub 47} phases. EDX study shows the energy belonging to the L line of Nd. Finally, films doped with Nd and subjected to a thermal treatment of 20 h were analyzed through XP S, showing the binding energies at the crystalline lattice correspond to Nd{sub 2} (MoO{sub 4}){sub 3} and Nd{sub 2}Mo{sub 2}O{sub 7}. (Author)

  6. Investigation of the Carbon Monoxide Gas Sensing Characteristics of Tin Oxide Mixed Cerium Oxide Thin Films

    Directory of Open Access Journals (Sweden)

    Muhammad B. Haider

    2012-02-01

    Full Text Available Thin films of tin oxide mixed cerium oxide were grown on unheated substrates by physical vapor deposition. The films were annealed in air at 500 °C for two hours, and were characterized using X-ray photoelectron spectroscopy, atomic force microscopy and optical spectrophotometry. X-ray photoelectron spectroscopy and atomic force microscopy results reveal that the films were highly porous and porosity of our films was found to be in the range of 11.6–21.7%. The films were investigated for the detection of carbon monoxide, and were found to be highly sensitive. We found that 430 °C was the optimum operating temperature for sensing CO gas at concentrations as low as 5 ppm. Our sensors exhibited fast response and recovery times of 26 s and 30 s, respectively.

  7. A low-temperature synthesis of electrochemical active Pt nanoparticles and thin films by atomic layer deposition on Si(111) and glassy carbon surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Rui [Joint Center for Artificial Photosynthesis, California Institute of Technology, Pasadena, CA 91125 (United States); Han, Lihao [Joint Center for Artificial Photosynthesis, California Institute of Technology, Pasadena, CA 91125 (United States); Photovoltaic Materials and Devices (PVMD) Laboratory, Delft University of Technology, P.O. Box 5031, GA Delft 2600 (Netherlands); Huang, Zhuangqun; Ferrer, Ivonne M. [Joint Center for Artificial Photosynthesis, California Institute of Technology, Pasadena, CA 91125 (United States); Division of Chemistry and Chemical Engineering, California Institute of Technology, 210 Noyes Laboratory 127-72, Pasadena, CA 91125 (United States); Smets, Arno H.M.; Zeman, Miro [Photovoltaic Materials and Devices (PVMD) Laboratory, Delft University of Technology, P.O. Box 5031, GA Delft 2600 (Netherlands); Brunschwig, Bruce S., E-mail: bsb@caltech.edu [Beckman Institute, California Institute of Technology, Pasadena, CA 91125 (United States); Lewis, Nathan S., E-mail: nslewis@caltech.edu [Joint Center for Artificial Photosynthesis, California Institute of Technology, Pasadena, CA 91125 (United States); Beckman Institute, California Institute of Technology, Pasadena, CA 91125 (United States); Division of Chemistry and Chemical Engineering, California Institute of Technology, 210 Noyes Laboratory 127-72, Pasadena, CA 91125 (United States); Kavli Nanoscience Institute, California Institute of Technology, Pasadena, CA 91125 (United States)

    2015-07-01

    Atomic layer deposition (ALD) was used to deposit nanoparticles and thin films of Pt onto etched p-type Si(111) wafers and glassy carbon discs. Using precursors of MeCpPtMe{sub 3} and ozone and a temperature window of 200–300 °C, the growth rate was 80–110 pm/cycle. X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and scanning electron microscopy (SEM) were used to analyze the composition, structure, morphology, and thickness of the ALD-grown Pt nanoparticle films. The catalytic activity of the ALD-grown Pt for the hydrogen evolution reaction was shown to be equivalent to that of e-beam evaporated Pt on glassy carbon electrode. - Highlights: • Pure Pt films were grown by atomic layer deposition (ALD) using MeCpPtMe3 and ozone. • ALD-grown Pt thin films had high growth rates of 110 pm/cycle. • ALD-grown Pt films were electrocatalytic for hydrogen evolution from water. • Electrocatalytic activity of the ALD Pt films was equivalent to e-beam deposited Pt. • No carbon species were detected in the ALD-grown Pt films.

  8. A statistical mechanics model of carbon nanotube macro-films

    Institute of Scientific and Technical Information of China (English)

    2011-01-01

    Carbon nanotube macro-films are two-dimensional films with micrometer thickness and centimeter by centimeter in-plane dimension.These carbon nanotube macroscopic assemblies have attracted significant attention from the material and mechanics communities recently because they can be easily handled and tailored to meet specific engineering needs.This paper reports the experimental methods on the preparation and characterization of single-walled carbon nanotube macro-films,and a statistical mechanics model on ...

  9. ENHANCING ADHESION OF TETRAHEDRAL AMORPHOUS CARBON FILMS

    Institute of Scientific and Technical Information of China (English)

    Zhao Yuqing; Lin Yi; Wang Xiaoyan; Wang Yanwu; Wei Xinyu

    2005-01-01

    Objective The high energy ion bombardment technique is applied to enhancing the adhesion of the tetrahedral amorphous carbon (TAC) films deposited by the filtered cathode vacuum arc (FCVA). Methods The abrasion method, scratch method, heating and shaking method as well as boiling salt solution method is used to test the adhesion of the TAC films on various material substrates. Results The test results show that the adhesion is increased as the ion bombardment energy increases. However, if the bombardment energy were over the corresponding optimum value, the adhesion would be enhanced very slowly for the harder material substrates and drops quickly, for the softer ones. Conclusion The optimum values of the ion bombardment energy are larger for the harder materials than that for the softer ones.

  10. Effect of Different Catalyst Deposition Technique on Aligned Multiwalled Carbon Nanotubes Grown by Thermal Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    Mohamed Shuaib Mohamed Saheed

    2014-01-01

    Full Text Available The paper reported the investigation of the substrate preparation technique involving deposition of iron catalyst by electron beam evaporation and ferrocene vaporization in order to produce vertically aligned multiwalled carbon nanotubes array needed for fabrication of tailored devices. Prior to the growth at 700°C in ethylene, silicon dioxide coated silicon substrate was prepared by depositing alumina followed by iron using two different methods as described earlier. Characterization analysis revealed that aligned multiwalled carbon nanotubes array of 107.9 µm thickness grown by thermal chemical vapor deposition technique can only be achieved for the sample with iron deposited using ferrocene vaporization. The thick layer of partially oxidized iron film can prevent the deactivation of catalyst and thus is able to sustain the growth. It also increases the rate of permeation of the hydrocarbon gas into the catalyst particles and prevents agglomeration at the growth temperature. Combination of alumina-iron layer provides an efficient growth of high density multiwalled carbon nanotubes array with the steady growth rate of 3.6 µm per minute for the first 12 minutes and dropped by half after 40 minutes. Thicker and uniform iron catalyst film obtained from ferrocene vaporization is attributed to the multidirectional deposition of particles in the gaseous form.

  11. Vacuum ultraviolet annealing of thin films grown by pulsed laser deposition

    Science.gov (United States)

    Craciun, Valentin; Craciun, Doina; Andreazza, Pascal; Perriere, Jacques; Boyd, Ian W.

    1999-01-01

    The effect of a post-deposition annealing treatment in 1 bar of oxygen at moderate temperatures (excimer lamp upon thin ZrO 2 and hydroxyapatite (HAp) films grown by the pulsed laser deposition (PLD) technique was investigated. The optical and structural properties of the films were improved by this treatment, the lower the deposition temperature and, accordingly, the poorer the initial characteristics, the more significant the improvements. The combination of these two techniques allowed us to obtain at temperatures below 350°C highly textured (020) ZrO 2 films, exhibiting optical absorption coefficients lower than 5×10 2 cm -1 and high refractive index values of around 2.25 in the visible region of the spectrum. The VUV treatment was also beneficial for the partially crystalline HAp layers containing tetracalcium phosphate and calcium oxide phases grown by the PLD technique under a low pressure oxidising atmosphere of only 10 -5 torr without any water vapours. After the VUV-assisted anneal, the crystalline structure and the stoichiometry greatly improved while the percentage of the other crystalline phases initially present was many times reduced.

  12. Deposition of carbon nitride films for space application

    Institute of Scientific and Technical Information of China (English)

    Feng Yu-Dong; Xu Chao; Wang Yi; Zhang Fu-Jia

    2006-01-01

    Carbon nitride thin films were prepared by electron-beam evaporation assisted with nitrogen ion bombardment and TiN/CNx composite films were by unbalanced dc magnetron sputtering, respectively. It was found that the sputtered films were better than the evaporated films in hardness and adhesion. The experiments of atomic oxygen action, cold welding, friction and wearing were emphasized, and the results proved that the sputtered TiN/CNx composite films were suitable for space application.

  13. Preparation and Thermal Characterization of Diamond-Like Carbon Films

    Institute of Scientific and Technical Information of China (English)

    BAI Su-Yuan; TANG Zhen-An; HUANG Zheng-Xing; Yu Jun; WANG Jing; LIU Gui-Chang

    2009-01-01

    Diamond-like carbon (DLC) films are prepared on silicon substrates by microwave electron cyclotron resonance plasma enhanced chemical vapor deposition. Raman spectroscopy indicates that the films have an amorphous structure and typical characteristics. The topographies of the films are presented by AFM images. Effective thermal conductivities of the films are measured using a nanosecond pulsed photothermal reflectance method. The results show that thermal conductivity is dominated by the microstructure of the films.

  14. Characterization of Perovskite Films Grown by a Novel Low-Temperature Process for Uncooled IR Detector Applications

    Science.gov (United States)

    2008-12-01

    and semiconductor thin- films (Schwenzer et al., 2006; Kisailus et al, 2006; Brutchey and Morse, 2006). The resulting pyroelectric, perovskite -based...1 CHARACTERIZATION OF PEROVSKITE FILMS GROWN BY A NOVEL LOW- TEMPERATURE PROCESS FOR UNCOOLED IR DETECTOR APPLICATIONS W.L. Sarney* and J.W...multimetallic perovskite nanoparticle deposition, direct-write digitally-scripted laser phase conversion, and MEMS fabrication and optimization

  15. Thermal evolution of Er silicate thin films grown by rf magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Lo Savio, R; Miritello, M; Piro, A M; Grimaldi, M G; Priolo, F [MATIS CNR-INFM and Dipartimento di Fisica e Astronomia dell' Universita di Catania, via Santa Sofia 64, 95123 Catania (Italy); Iacona, F [CNR-IMM, Stradale Primosole 50, 95121 Catania (Italy)], E-mail: roberto.losavio@ct.infn.it

    2008-11-12

    Stoichiometric Er silicate thin films, monosilicate (Er{sub 2}SiO{sub 5}) and disilicate (Er{sub 2}Si{sub 2}O{sub 7}), have been grown on c-Si substrates by rf magnetron sputtering. The influence of annealing temperature in the range 1000-1200 deg. C in oxidizing ambient (O{sub 2}) on the structural and optical properties has been studied. In spite of the known reactivity of rare earth silicates towards silicon, Rutherford backscattering spectrometry shows that undesired chemical reactions between the film and the substrate can be strongly limited by using rapid thermal treatments. Monosilicate and disilicate films crystallize at 1100 and 1200 deg. C, respectively, as shown by x-ray diffraction analysis; the crystalline structures have been identified in both cases. Moreover, photoluminescence (PL) measurements have demonstrated that the highest PL intensity is obtained for Er{sub 2}Si{sub 2}O{sub 7} film annealed at 1200 deg. C. In fact, this treatment allows us to reduce the defect density in the film, in particular by saturating oxygen vacancies, as also confirmed by the increase of the lifetime of the PL signal.

  16. Crystallinity Improvement of ZnO Thin Film on Different Buffer Layers Grown by MBE

    Directory of Open Access Journals (Sweden)

    Shao-Ying Ting

    2012-01-01

    Full Text Available The material and optical properties of ZnO thin film samples grown on different buffer layers on sapphire substrates through a two-step temperature variation growth by molecular beam epitaxy were investigated. The thin buffer layer between the ZnO layer and the sapphire substrate decreased the lattice mismatch to achieve higher quality ZnO thin film growth. A GaN buffer layer slightly increased the quality of the ZnO thin film, but the threading dislocations still stretched along the c-axis of the GaN layer. The use of MgO as the buffer layer decreased the surface roughness of the ZnO thin film by 58.8% due to the suppression of surface cracks through strain transfer of the sample. From deep level emission and rocking curve measurements it was found that the threading dislocations play a more important role than oxygen vacancies for high-quality ZnO thin film growth.

  17. Photoluminescence properties of ZnO films grown on InP by thermally oxidizing metallic Zn films

    CERN Document Server

    Chen, S J; Zhang, J Y; Lu, Y M; Shen, D Z; Fan, X W

    2003-01-01

    Photoluminescence (PL) properties of ZnO films grown on (001) InP substrates by thermal oxidization of metallic Zn films, in which oxygen vacancies and interstitial Zn ions are compensated by P ions diffusing from (001) InP substrates, are investigated. X-ray diffraction spectra indicate that P ions have diffused into the Zn films and chemically combined with Zn ions to form Zn sub 3 P sub 2. Intense free exciton emission dominates the PL spectra of ZnO films with very weak deep-level emission. Low-temperature PL spectra at 79 K are dominated by neutral-donor bound exciton emission at 3.299 eV (I sub 4) with a linewidth of 17.3 meV and neutral-acceptor bound exciton emission at 3.264 eV. The free exciton emission increases with increasing temperature and eventually dominates the emission spectrum for temperature higher than 170 K. Furthermore, the visible emission around 2.3 eV correlated with oxygen deficiencies and interstitial Zn defects was quenched to a remarkable degree by P diffusing from InP substrate...

  18. Next Generation Structural Composite Using Surface Grown Carbon Nanotubes

    Science.gov (United States)

    2012-10-01

    Marwan  Al‐Haik (Virginia Tech, Mechanical Engineering)  3‐ Claudi Luhrs (Co‐PI, UNM, Mechanical Engineering)  4‐ Hamid Garmestani (Georgia Tech, Mechanical...Taha  Army  Office  of  Research  Award:  DURIP:  High  Velocity  Impact  Equipment, May 2010.  5. Dr  Marwan   Al‐Haik  and  Dr. Mahmoud  Reda  Taha...Chavez.   Honor Undergraduate Thesis, Growth of carbon nanotubes/nanofibers on the  surface  of  carbon  fibers.  Advisor  Marwan   Al‐Haik  May  2009

  19. Structural, nanomechanical and variable range hopping conduction behavior of nanocrystalline carbon thin films deposited by the ambient environment assisted filtered cathodic jet carbon arc technique

    Energy Technology Data Exchange (ETDEWEB)

    Panwar, O.S., E-mail: ospanwar@mail.nplindia.ernet.in [Polymorphic Carbon Thin Films Group, Physics of Energy Harvesting Division, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi - 110 012 (India); Rawal, Ishpal; Tripathi, R.K. [Polymorphic Carbon Thin Films Group, Physics of Energy Harvesting Division, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi - 110 012 (India); Srivastava, A.K. [Electron and Ion Microscopy, Sophisticated and Analytical Instruments, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi - 110 012 (India); Kumar, Mahesh [Ultrafast Opto-Electronics and Tetrahertz Photonics Group, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi - 110 012 (India)

    2015-04-15

    Highlights: • Nanocrystalline carbon thin films are grown by filtered cathodic jet carbon arc process. • Effect of gaseous environment on the properties of carbon films has been studied. • The structural and nanomechanical properties of carbon thin films have been studied. • The VRH conduction behavior in nanocrystalline carbon thin films has been studied. - Abstract: This paper reports the deposition and characterization of nanocrystalline carbon thin films by filtered cathodic jet carbon arc technique assisted with three different gaseous environments of helium, nitrogen and hydrogen. All the films are nanocrystalline in nature as observed from the high resolution transmission electron microscopic (HRTEM) measurements, which suggests that the nanocrystallites of size ∼10–50 nm are embedded though out the amorphous matrix. X-ray photoelectron spectroscopic studies suggest that the film deposited under the nitrogen gaseous environment has the highest sp{sup 3}/sp{sup 2} ratio accompanied with the highest hardness of ∼18.34 GPa observed from the nanoindentation technique. The film deposited under the helium gaseous environment has the highest ratio of the area under the Raman D peak to G peak (A{sub D}/A{sub G}) and the highest conductivity (∼2.23 S/cm) at room temperature, whereas, the film deposited under the hydrogen environment has the lowest conductivity value (2.27 × 10{sup −7} S/cm). The temperature dependent dc conduction behavior of all the nanocrystalline carbon thin films has been analyzed in the light of Mott’s variable range hopping (VRH) conduction mechanism and observed that all the films obey three dimension VRH conduction mechanism for the charge transport.

  20. Carbon nanofibers grown on metallic filters as novel catalytic materials

    OpenAIRE

    Tribolet, Pascal; Kiwi-Minsker, Lioubov

    2005-01-01

    Carbon nanofibers (CNF) were synthesized on sintered metal fibers (SMF) filters of nickel and Ni-containing alloys (Inconel, stainless steel (SS)) by thermal chemical vapor deposition of ethane in the presence of hydrogen at not, vert, similar660 °C. The CNFs were formed directly over the SMF filters without deposition of metal particles. The catalytic active sites leading to the CNF formation were attained by oxidation–reduction of the SMF filter. The CNFs present platelet morphology as dete...

  1. The effect of different annealing conditions in undoped and Ag doped ZnO thin films grown by SILAR method

    OpenAIRE

    GÜNEY, HARUN

    2015-01-01

    Undoped, %3 and %5 Silver (Ag) doped zinc oxide (ZnO) thin films have been grown on glass substrates by simple and economic successive ionic layer absorption and reaction method (SILAR). All grown films were annealed vacuum and air to investigate to effective annealing at 573 K for 30 minutes. Energy-Dispersive-X-Ray-Fluorescence (EDXRF) spectroscopy showed %3 and %5 dopants Ag. Absorbance measurements showed that the optical band-gaps of all thin films were wide and generally decrease with a...

  2. Growth and structure of MBE grown TiO2 anatase films with rutile nano-crystallites

    Energy Technology Data Exchange (ETDEWEB)

    Shao, Rui; Wang, Chong M.; McCready, David E.; Droubay, Timothy C.; Chambers, Scott A.

    2007-03-15

    We have grown TiO2 anatase films with rutile nanocrystalline inclusions using molecular beam epitaxy under different growth conditions. This model system is important for investigating the role of rutile/anatase interfaces in heterogeneous photocatalysis. To control the film structure, we grew a pure anatase (001) layer at a slow rate and then increased the growth rate to drive the nucleation of rutile particles. Structure analysis indicates that the rutile phase has four preferred orientations in the anatase film.

  3. Tantalum films with well-controlled roughness grown by oblique incidence deposition

    Science.gov (United States)

    Rechendorff, K.; Hovgaard, M. B.; Chevallier, J.; Foss, M.; Besenbacher, F.

    2005-08-01

    We have investigated how tantalum films with well-controlled surface roughness can be grown by e-gun evaporation with oblique angle of incidence between the evaporation flux and the surface normal. Due to a more pronounced shadowing effect the root-mean-square roughness increases from about 2 to 33 nm as grazing incidence is approached. The exponent, characterizing the scaling of the root-mean-square roughness with length scale (α), varies from 0.75 to 0.93, and a clear correlation is found between the angle of incidence and root-mean-square roughness.

  4. Preparation of AgInSe2 thin films grown by vacuum evaporation method

    Science.gov (United States)

    Matsuo, H.; Yoshino, K.; Ikari, T.

    2006-09-01

    Polycrystalline AgInSe2 thin films were successfully grown on glass substrates by an evaporation method. The starting materials were stoichiometrically mixed Ag2Se and In2Se3 powders. X-ray diffraction revealed that the sample annealed at 600 °C consisted of AgInSe2 single phase, with (112) orientation and a large grain size. The lattice constant (a axis) was close to JCPDS values. From optical transmittance and reflectance measurements, the bandgap energy was estimated to be 1.17 eV.

  5. SEM, EDS, PL and absorbance study of CdTe thin films grown by CSS method

    Energy Technology Data Exchange (ETDEWEB)

    Hernandez-Torres, M.E.; Silva-Gonzalez, R.; Gracia-Jimenez, J.M. [Instituto de Fisica, BUAP, Apdo. Postal J-48, San Manuel, 72570 Puebla, Pue. (Mexico); Casarrubias-Segura, G. [CIE- UNAM, 62580 Temixco, Morelos (Mexico)

    2006-09-22

    Oxygen-doped CdTe films were grown on conducting glass substrates by the close spaced sublimation (CSS) method and characterized using SEM, EDS, photoluminescence (PL) and absorbance. A significant change in the polycrystalline morphology is observed when the oxygen proportion is increased in the deposition atmosphere. The EDS analysis showed that all samples are nonstoichiometric with excess Te. The PL spectra show emission bands associated with Te vacancies (V{sub Te}), whose intensities decrease as the oxygen proportion in the CSS chamber is increased. The oxygen impurities occupy Te vacancies and modify the surfaces states, improving the nonradiative process. (author)

  6. Purification of Single-walled Carbon Nanotubes Grown by a Chemical Vapour Deposition (CVD) Method

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    A procedure for purification of single-walled carbon nanotubes(SWNTs) grown by the chemical vapour deposition (CVD) of carbon monooxide has been developed. Based on the result from TGA/DTA of as-prepared sample, the oxidation temperature was determined. The process included sonication, oxidation and acid washing steps. The purity and yield after purification were determined and estimated by TEM. Moreover, for the first time, a loop structure for CVD SWNTs has been observed.

  7. Scaling behavior of the surface roughness of platinum films grown by oblique angle deposition

    Science.gov (United States)

    Dolatshahi-Pirouz, A.; Hovgaard, M. B.; Rechendorff, K.; Chevallier, J.; Foss, M.; Besenbacher, F.

    2008-03-01

    Thin platinum films with well-controlled rough surface morphologies are grown by e-gun evaporation at an oblique angle of incidence between the deposition flux and the substrate normal. Atomic force microscopy is used to determine the root-mean-square value w of the surface roughness on the respective surfaces. From the scaling behavior of w , we find that while the roughness exponent α remains nearly unchanged at about 0.90, the growth exponent β changes from 0.49±0.04 to 0.26±0.01 as the deposition angle approaches grazing incidence. The values of the growth exponent β indicate that the film growth is influenced by both surface diffusion and shadowing effects, while the observed change from 0.49 to 0.26 can be attributed to differences in the relative importance of diffusion and shadowing with the deposition angle.

  8. Growth and Characterization of Semi-Insulating GaN Films Grown by MOCVD

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    High resistivity unintentionally doped GaN films were grown on (0001) sapphire substrates by metalorganic chemical vapor deposition. The surface morphology of the layer was measured by both atomic force microscopy and scanning electron microscopy. The results show that the films have mirror-like surface morphology with root mean square of 0.3 nm. The full width at half maximum of double crystal X-ray diffraction rocking curve for (0002) GaN is about 5.22 arcmin, indicative of high crystal quality. The resistivity of the GaN epilayers at room temperature and at 250 ℃ was measured to be approximate 109 and 106 Ω·cm respectively, by variable temperature Hall measurement. Deep level traps in the GaN epilayers were investigated by thermally stimulated current and resistivity measurements.

  9. Effect of external stress on phase diagrams and dielectric properties of epitaxial ferroelectric thin films grown on orthorhombic substrates

    Institute of Scientific and Technical Information of China (English)

    L(U) Ye-gang; DENG Shui-feng; GONG Lun-jun; YANG Jian-tao

    2006-01-01

    A Landau-Ginsburg-Devonshire(LD)-type thermodynamic theory was used to describe the effect of external stress on phase diagrams and dielectric properties of epitaxial ferroelectric thin films grown on orthorhombic substrates which induce nonequally biaxial misfit strains in the films plane. The "misfit strain-external stress" and "external stress-temperature" phase diagrams were constructed for single-domain BaTiO3(BT) and PbTiO3(PT) thin films. It is shown that the external stress may lead to the rotation of the spontaneous polarization and a gradual change of its magnitude, which may result in phase transition. Nonequally biaxial misfit strains dependence of the stability of polarization states may be governed by external stress. At room temperature,stress-induced ferroelectric/paraelectric phase transition which occurs in film on cubic substrate does not take place in the ferroelectric thin film grown on orthorhombic substrate. It is also shown that the nonequally misfit strains in the film plane may lead to the appearance of new phases which do not form in films grown on cubic substrates under external stress. The dependence of the dielectric response on the external stress is also studied. It is shown that the dielectric constants of single-domain PT and BT films are very sensitive to the external stress under the given anisotropic misfit strains-temperature conditions. It presents theoretical evidence that the external stress and anisotropic misfit strains can be employed for improving the thin films physical properties.

  10. Effects of the oxygen precursor on the electrical and structural properties of HfO2 films grown by atomic layer deposition on Ge

    Science.gov (United States)

    Spiga, S.; Wiemer, C.; Tallarida, G.; Scarel, G.; Ferrari, S.; Seguini, G.; Fanciulli, M.

    2005-09-01

    We report on the growth by atomic layer deposition of HfO2 films on HF-last treated Ge(001) substrates using HfCl4 as a Hf source and either O3 or H2O as oxygen sources. The choice of the oxygen precursor strongly influences the structural, chemical, and electrical properties of the HfO2 films: Those grown using H2O exhibit local epitaxial growth, a large amount of contaminants such as chlorine and carbon, and a large frequency dispersion of the capacitance-voltage (C -V) characteristics. Films grown using O3 are good insulators and exhibit well-shaped C -V curves with a minimum frequency dispersion of the accumulation capacitance. Moreover, they are smoother, less crystallized, and with a lower contaminant content than those grown using H2O. However, the use of O3 leads to the formation of a 2nm thick layer, possibly GeOx, at the HfO2/Ge interface.

  11. Electrochemical impedance spectroscopy on nanostructured carbon electrodes grown by supersonic cluster beam deposition

    Energy Technology Data Exchange (ETDEWEB)

    Bettini, Luca Giacomo; Bardizza, Giorgio; Podesta, Alessandro; Milani, Paolo; Piseri, Paolo, E-mail: piseri@mi.infn.it [Universita degli Studi di Milano, Dipartimento di Fisica and CIMaINa (Italy)

    2013-02-15

    Nanostructured porous films of carbon with density of about 0.5 g/cm{sup 3} and 200 nm thickness were deposited at room temperature by supersonic cluster beam deposition (SCBD) from carbon clusters formed in the gas phase. Carbon film surface topography, determined by atomic force microscopy, reveals a surface roughness of 16 nm and a granular morphology arising from the low kinetic energy ballistic deposition regime. The material is characterized by a highly disordered carbon structure with predominant sp2 hybridization as evidenced by Raman spectroscopy. The interface properties of nanostructured carbon electrodes were investigated by cyclic voltammetry and electrochemical impedance spectroscopy employing KOH 1 M solution as aqueous electrolyte. An increase of the double layer capacitance is observed when the electrodes are heat treated in air or when a nanostructured nickel layer deposited by SCBD on top of a sputter deposited film of the same metal is employed as a current collector instead of a plain metallic film. This enhancement is consistent with an improved charge injection in the active material and is ascribed to the modification of the electrical contact at the interface between the carbon and the metal current collector. Specific capacitance values up to 120 F/g have been measured for the electrodes with nanostructured metal/carbon interface.

  12. Carbon assimilation in Eucalyptus urophylla grown under high atmospheric CO2 concentrations: A proteomics perspective.

    Science.gov (United States)

    Santos, Bruna Marques Dos; Balbuena, Tiago Santana

    2017-01-06

    Photosynthetic organisms may be drastically affected by the future climate projections of a considerable increase in CO2 concentrations. Growth under a high concentration of CO2 could stimulate carbon assimilation-especially in C3-type plants. We used a proteomics approach to test the hypothesis of an increase in the abundance of the enzymes involved in carbon assimilation in Eucalyptus urophylla plants grown under conditions of high atmospheric CO2. Our strategy allowed the profiling of all Calvin-Benson cycle enzymes and associated protein species. Among the 816 isolated proteins, those involved in carbon fixation were found to be the most abundant ones. An increase in the abundance of six key enzymes out of the eleven core enzymes involved in carbon fixation was detected in plants grown at a high CO2 concentration. Proteome changes were corroborated by the detection of a decrease in the stomatal aperture and in the vascular bundle area in Eucalyptus urophylla plantlets grown in an environment of high atmospheric CO2. Our proteomics approach indicates a positive metabolic response regarding carbon fixation in a CO2-enriched atmosphere. The slight but significant increase in the abundance of the Calvin enzymes suggests that stomatal closure did not prevent an increase in the carbon assimilation rates.

  13. Carbon Nanotubes Grown on Metal Microelectrodes for the Detection of Dopamine.

    Science.gov (United States)

    Yang, Cheng; Jacobs, Christopher B; Nguyen, Michael D; Ganesana, Mallikarjunarao; Zestos, Alexander G; Ivanov, Ilia N; Puretzky, Alexander A; Rouleau, Christopher M; Geohegan, David B; Venton, B Jill

    2016-01-05

    Microelectrodes modified with carbon nanotubes (CNTs) are useful for the detection of neurotransmitters because the CNTs enhance sensitivity and have electrocatalytic effects. CNTs can be grown on carbon fiber microelectrodes (CFMEs) but the intrinsic electrochemical activity of carbon fibers makes evaluating the effect of CNT enhancement difficult. Metal wires are highly conductive and many metals have no intrinsic electrochemical activity for dopamine, so we investigated CNTs grown on metal wires as microelectrodes for neurotransmitter detection. In this work, we successfully grew CNTs on niobium substrates for the first time. Instead of planar metal surfaces, metal wires with a diameter of only 25 μm were used as CNT substrates; these have potential in tissue applications due to their minimal tissue damage and high spatial resolution. Scanning electron microscopy shows that aligned CNTs are grown on metal wires after chemical vapor deposition. By use of fast-scan cyclic voltammetry, CNT-coated niobium (CNT-Nb) microelectrodes exhibit higher sensitivity and lower ΔEp value compared to CNTs grown on carbon fibers or other metal wires. The limit of detection for dopamine at CNT-Nb microelectrodes is 11 ± 1 nM, which is approximately 2-fold lower than that of bare CFMEs. Adsorption processes were modeled with a Langmuir isotherm, and detection of other neurochemicals was also characterized, including ascorbic acid, 3,4-dihydroxyphenylacetic acid, serotonin, adenosine, and histamine. CNT-Nb microelectrodes were used to monitor stimulated dopamine release in anesthetized rats with high sensitivity. This study demonstrates that CNT-grown metal microelectrodes, especially CNTs grown on Nb microelectrodes, are useful for monitoring neurotransmitters.

  14. Investigation of AgInS{sub 2} thin films grown by coevaporation

    Energy Technology Data Exchange (ETDEWEB)

    Arredondo, C A; Gordillo, G [Departamento de Fisica, Universidad Nacional de Colombia, Bogota (Colombia); J, Clavijo, E-mail: caarredondoo@unal.edu.c, E-mail: ggordillog@unal.edu.c [Departamento de Quimica, Universidad Nacional de Colombia, Bogota, Cr.30 N0 45-03 (Colombia)

    2009-05-01

    AgInS{sub 2} thin films were grown on soda-lime glass substrates by co-evaporation of the precursors in a two-step process. X-ray diffraction (XRD) measurements indicated that these compounds grow in different phases and with different crystalline structure depending upon the deposition conditions. However, through a parameter study, conditions were found to grow thin films containing only the AgInS{sub 2} phase with chalcopyrite type structure. In samples containing a mixture of several phases, the contribution in percentage terms of each phase to the whole compound was estimated with the help of the PowderCell simulation package. It was also found that the AgInS{sub 2} films present p-type conductivity, a high absorption coefficient (greater than 10{sub 4} cm{sub -1}) and an energy band gap Eg of about 1.95 eV, indicating that this compound has good properties to perform as absorbent layer in thin film tandem solar cells. The effect of the deposition conditions on the optical and morphological properties was also investigated through spectral transmitance and atomic force microscopy (AFM) measurements.

  15. Thermal stability of MBE-grown epitaxial MoSe2 and WSe2 thin films

    Science.gov (United States)

    Chang, Young Jun; Choy, Byoung Ki; Phark, Soo-Hyon; Kim, Minu

    Layered transition metal dichalcogenides (TMDs) draw much attention, because of its unique optical properties and band structures depending on the layer thicknesses. However, MBE growth of epitaxial films demands information about thermal stability of stoichiometry and related electronic structure for high temperature range. We grow epitaxial MoSe2 and WSe2 ultrathin films by using molecular beam epitaxy (MBE). We characterize stoichiometry of films grown at various growth temperature by using various methods, XPS, EDX, and TOF-MEIS. We further test high temperature stability of electronic structure for those films by utilizing in-situ ellipsometry attached to UHV chamber. We discuss threshold temperatures up to 700~1000oC, at which electronic phases changes from semiconductor to metal due to selenium deficiency. This information can be useful for potential application of TMDs for fabrication of Van der Waals multilayers and related devices. This research was supported by Nano.Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning. (2009-0082580), NRF-2014R1A1A1002868.

  16. Growth-induced optical anisotropy of epitaxial garnet films grown on (110)-oriented substrates

    Science.gov (United States)

    Kitamura, K.; Iyi, N.; Kimura, S.; Chevrier, F.; Devignes, J. M.; Le Gall, H.

    1986-08-01

    Garnet films of nominal composition (Y,Nd)3Ga5O12, were grown on (110) 1°-off Gd3Ga5O12 substrates for investigation of their growth-induced optical anisotropy. Optical birefringence and directions of the electric vectors of polarized rays passing through the films were measured under a polarizing microscope using a Brace-Köhler compensator. The growth-induced anisotropy of these films optically exhibited orthorhombic characteristics with the X, Y, and Z optic elasticity axes coinciding with the [001], [110], and [1¯10] directions, respectively. The crystallographic data obtained by means of single-crystal diffractometry suggested that the cubic crystal system of the garnet film was distorted, though very slightly, to an orthorhombic one with a,b, and c axes that coincided, respectively, with the [1¯10],[001], and [110] of the original cubic cell. In addition, by annealing at 1150 °C, this distortion disappeared and the crystal system reverted to cubic.

  17. Transport properties of as-grown MgB{sub 2} films using micro-bridge

    Energy Technology Data Exchange (ETDEWEB)

    Iriuda, H. [Graduate School of Engineering, Iwate University, 4-3-5 Ueda, Morioka 020-8551 (Japan); Harada, Y. [Iwate Industry Promotion Center, 3-35-2 Iiokashinden, Morioka, Iwate 020-0852 (Japan)]. E-mail: yharada@luck.ocn.ne.jp; Goto, S. [Lightom, 95-2 Sugo, Takizawa 020-0173 (Japan); Shimizu, T. [Graduate School of Engineering, Iwate University, 4-3-5 Ueda, Morioka 020-8551 (Japan); Takahashi, T. [Graduate School of Engineering, Iwate University, 4-3-5 Ueda, Morioka 020-8551 (Japan); Kuroha, M. [Graduate School of Engineering, Iwate University, 4-3-5 Ueda, Morioka 020-8551 (Japan); Oba, T. [Faculty of Materials science and Engineering, Iwate University, 4-3-5 Ueda, Morioka 020-8551 (Japan); Seki, M. [Faculty of Materials science and Engineering, Iwate University, 4-3-5 Ueda, Morioka 020-8551 (Japan); Nakanishi, Y. [Graduate School of Engineering, Iwate University, 4-3-5 Ueda, Morioka 020-8551 (Japan); Yoshizawa, M. [Iwate Industry Promotion Center, 3-35-2 Iiokashinden, Morioka, Iwate 020-0852 (Japan)

    2006-10-01

    The intermetallic superconductor magnesium diboride (MgB{sub 2}) is a promising candidate for use in superconducting electronic devices due to its high transition temperature (T{sub c}) and simple AlB{sub 2} type structure. Its application requires the development of a high-quality film fabrication process. We have previously reported the growth of MgB{sub 2} films deposited on MgO (1 0 0), SrTiO{sub 3} (1 0 0) and Al{sub 2}O{sub 3} (0 0 0 1) substrate using a co-evaporation method combined with a molecular beam epitaxy (MBE) apparatus. In this paper, we report on the details of the transport properties of these as-grown MgB{sub 2} films. These film's basal properties were investigated by XRD, RHEED, SQUID and the dc-4 probe method. Micro-bridges made using micro-processing methods such as photolithography and dry etching were used for transport measurements. All bridges were 10 {mu}m wide x 30 {mu}m long to allow estimation of their critical current density using the dc-4 probe method. We discuss the relationship between critical current densities and the substrates used.

  18. Scaling behavior of ZnPc thin films grown on CuI interlayers

    Science.gov (United States)

    Lee, Jinho; Jin, Sung-Il; Park, Chan Ryang; Yim, Sanggyu

    2015-01-01

    The growth behavior and consequent surface morphology evolution of zinc phthalocyanine (ZnPc) thin films deposited on a CuI interlayer were studied using atomic force microscopy and height difference correlation function (HDCF) analysis. The planar phthalocyanine thin films grown on non-interacting substrates have previously been reported to show anomalous scaling behavior such as large growth exponents, ß, sometimes larger than 0.5, and small anomaly values, ρ, typically smaller than 0.6. In contrast, ZnPc thin films on a CuI interlayer (CuI/ ZnPc) in this work showed conventional scaling behavior with a ß value of 0.26 ± 0.05 and a ρ value of 0.91. The HDCF analyses and x-ray diffraction results indicate that the expected interdigitated electron donor-acceptor interface was hardly formed for the CuI/ZnPc thin film system due to the lack of surface-parallel crystallites with high step edge barriers.

  19. Induced polarized state in intentionally grown oxygen deficient KTaO{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Mota, D. A.; Romaguera-Barcelay, Y.; Tkach, A.; Agostinho Moreira, J.; Almeida, A. [IFIMUP and IN-Institute of Nanoscience and Nanotechnology, Department of Physics and Astronomy, Faculty of Science of University of Porto, Rua do Campo Alegre, 687, 4169-007 Porto (Portugal); Perez de la Cruz, J. [INESC TEC, Rua do Campo Alegre, 687, 4169-007 Porto (Portugal); Vilarinho, P. M. [Department of Ceramics and Glass Engineering, CICECO, University of Aveiro, 3810-193 Aveiro (Portugal); Tavares, P. B. [Centro de Quimica, Universidade de Tras-os-Montes e Alto Douro, Apartado 1013, 5001-801 Vila Real (Portugal)

    2013-07-21

    Deliberately oxygen deficient potassium tantalate thin films were grown by RF magnetron sputtering on Si/SiO{sub 2}/Ti/Pt substrates. Once they were structurally characterized, the effect of oxygen vacancies on their electric properties was addressed by measuring leakage currents, dielectric constant, electric polarization, and thermally stimulated depolarization currents. By using K{sub 2}O rich KTaO{sub 3} targets and specific deposition conditions, KTaO{sub 3-{delta}} oxygen deficient thin films with a K/Ta = 1 ratio were obtained. Room temperature X-ray diffraction patterns show that KTaO{sub 3-{delta}} thin films are under a compressive strain of 2.3% relative to KTaO{sub 3} crystals. Leakage current results reveal the presence of a conductive mechanism, following the Poole-Frenkel formalism. Furthermore, dielectric, polarization, and depolarization current measurements yield the existence of a polarized state below T{sub pol} {approx} 367 Degree-Sign C. A Cole-Cole dipolar relaxation was also ascertained apparently due to oxygen vacancies induced dipoles. After thermal annealing the films in an oxygen atmosphere at a temperature above T{sub pol}, the aforementioned polarized state is suppressed, associated with a drastic oxygen vacancies reduction emerging from annealing process.

  20. Preparation of Electrically Conductive Polystyrene/Carbon Nanofiber Nanocomposite Films

    Science.gov (United States)

    Sun, Luyi; O'Reilly, Jonathan Y.; Tien, Chi-Wei; Sue, Hung-Jue

    2008-01-01

    A simple and effective approach to prepare conductive polystyrene/carbon nanofiber (PS/CNF) nanocomposite films via a solution dispersion method is presented. Inexpensive CNF, which has a structure similar to multi-walled carbon nanotubes, is chosen as a nanofiller in this experiment to achieve conductivity in PS films. A good dispersion is…

  1. Solid-State Imaging Device With Carbon Film

    Science.gov (United States)

    Frazer, Robert E.

    1992-01-01

    Performance of solid-state imaging device enhanced by coating surface through which photons enter with thin film of carbon or diamondlike carbon. Film beneficial in two ways: acts as antireflection coat, and helps to dissipate undesired static electric charges that otherwise accumulate on surface.

  2. Flexible protective diamond-like carbon film on rubber

    NARCIS (Netherlands)

    Pei, Y.T.; Bui, X.L.; Hosson, J.Th.M. De

    2010-01-01

    In this paper we report an experimental approach to deposit flexible diamond-like carbon (DLC) films on rubber via self-segmentation. By making use of the substantial thermal mismatch between the DLC film and rubber substrate a dense network of cracks forms in the DLC film, contributing to its flexi

  3. Electronic properties of high-temperature superconducting thin films grown by pulsed laser deposition

    Science.gov (United States)

    Abrecht, M.; Ariosa, Daniel; Cloetta, D.; Margaritondo, Giorgio; Pavuna, Davor

    2002-11-01

    We use a pulsed laser deposition (PLD) setup to grow ultra-thin films of high temperature superconductors (HTSC) and transfer them in-situ into a photoemission chamber. Photoemission measurements on such films allow us to study non-cleavable materials, but can also give insights into aspects never measured before, like the influence of strain on the low energy electronic structure. Systematic studies of many different materials grown as films showed that Bi2Sr2CaCu2O8+x, Bi2Sr2Cu1O6+x, Bi2Sr2Ca2Cu3O10+x and La2-xSrxCuO4 films exhibit a conductor-like Fermi edge, but materials containing chains (such as YBa2Cu3O7-x) are prone to very rapid surface degradation, possibly related to critical oxygen loss at the surface. Among HTSC materials, La2-xSrxCuO4 is extremely interesting because of its rather simple structure and the fact that its critical temperature Tc can be enhanced by epitaxial strain. Here we present our first high resolution angular resolved photoemission spectroscopy (ARPES) results on 8 unit-cell thin La2-xSrxCuO4 films on SrLaAlO4 [001] substrates. Due to the lattice mismatch, such films are compressed in the copper oxygen planes and expanded in the c-axis direction. Results show a surprisingly modified Fermi surface compared to the one of non-strained samples.

  4. Atomic force microscopic characterization of films grown by inverse pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Egerhazi, L. [Department of Optics and Quantum Electronics, University of Szeged, P.O. Box 406, H-6701 Szeged (Hungary); Geretovszky, Zs. [Department of Optics and Quantum Electronics, University of Szeged, P.O. Box 406, H-6701 Szeged (Hungary); Csako, T. [Department of Optics and Quantum Electronics, University of Szeged, P.O. Box 406, H-6701 Szeged (Hungary); Szoerenyi, T. [Research Group on Laser Physics of the Hungarian Academy of Sciences, University of Szeged, P.O. Box 406, H-6701 Szeged (Hungary)]. E-mail: t.szorenyi@physx.u-szeged.hu

    2006-04-30

    Carbon nitride films have been deposited by KrF excimer laser ablation of a rotating graphite target in 5 Pa nitrogen ambient in an inverse pulsed laser deposition configuration, where the backward motion of the ablated species is utilised for film growth on substrates lying in the target plane. Topometric AFM scans of the films, exhibiting elliptical thickness distribution, have been recorded along the axes of symmetry of the deposition area. High resolution AFM scans revealed the existence of disk-like, or somewhat elongated rice-like features of 5-10 nm average thickness and {approx}100 nm largest dimension, densely packed over the whole, approximately 14 x 10 cm{sup 2} deposition area. The RMS roughness of the film decreased from 9 nm near to the laser spot down to 2 nm in the outer regions. Even the highest RMS value obtained for IPLD films was less than half of the typical, 25 nm roughness measured on simultaneously deposited PLD films.

  5. ELECTROCHEMICAL INVESTIGATION ON CARBON NANOTUBE FILM WITH DIFFERENT PRETREATMENTS

    Institute of Scientific and Technical Information of China (English)

    C.G. Hu; W.L. Wang; Y. Ma; W. Zhu

    2003-01-01

    Wide potential windows were found at carbon nanotube film electrodes in neutral solutions after being treated with nitric acid and mixed acid. Electrochemical reversibility was investigated at carbon nanotube films with different pretreatments for ferri/ferrocyanide and quinone /hydroquinone. Carbon nanotube film electrodes presented quasi-reversible electrochemical behavior for both electrolytes. In the range of scan rate, carbon nanotube film electrodes treated with acids showed heterogeneous electron-transfer properties, which was mainly controlled by its electron state density on the surface of the film. On the whole, the carbon nanotube electrode with nitric acid treatment presented the best electrochemical behaviors, so we chose it as an analytical electrode to determine the trace compound in dilute solution. The results demonstrated that this new electrode material exhibits superior performance characteristics for the detection of azide anion.

  6. Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors

    Energy Technology Data Exchange (ETDEWEB)

    Härkönen, J. [Helsinki Institute of Physics, CMS Upgrade Project, Helsinki (Finland); Ott, J. [Helsinki Institute of Physics, CMS Upgrade Project, Helsinki (Finland); Laboratory of Radio Chemistry, University of Helsinki (Finland); Mäkelä, M. [Laboratory of Inorganic Chemistry, University of Helsinki (Finland); Arsenovich, T.; Gädda, A.; Peltola, T. [Helsinki Institute of Physics, CMS Upgrade Project, Helsinki (Finland); Tuovinen, E. [Helsinki Institute of Physics, CMS Upgrade Project, Helsinki (Finland); VTT Technical Research Centre of Finland, Microsystem and Nanoelectronics (Finland); Luukka, P.; Tuominen, E. [Helsinki Institute of Physics, CMS Upgrade Project, Helsinki (Finland); Junkes, A. [Institute for Experimental Physics, University of Hamburg (Germany); Niinistö, J.; Ritala, M. [Laboratory of Inorganic Chemistry, University of Helsinki (Finland)

    2016-09-21

    In this report we cover two special applications of Atomic Layer Deposition (ALD) thin films to solve these challenges of the very small size pixel detectors. First, we propose to passivate the p-type pixel detector with ALD grown Al{sub 2}O{sub 3} field insulator with a negative oxide charge instead of using the commonly adopted p-stop or p-spray technologies with SiO{sub 2}, and second, to use plasma-enhanced ALD grown titanium nitride (TiN) bias resistors instead of the punch through biasing structures. Surface passivation properties of Al{sub 2}O{sub 3} field insulator was studied by Photoconductive Decay (PCD) method and our results indicate that after appropriate annealing Al{sub 2}O{sub 3} provides equally low effective surface recombination velocity as thermally oxidized Si/SiO{sub 2} interface. Furthermore, with properly designed annealing steps, the TiN thin film resistors can be tuned to have up to several MΩ resistances with a few µm of physical size required in ultra-fine pitch pixel detectors.

  7. Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors

    Science.gov (United States)

    Härkönen, J.; Ott, J.; Mäkelä, M.; Arsenovich, T.; Gädda, A.; Peltola, T.; Tuovinen, E.; Luukka, P.; Tuominen, E.; Junkes, A.; Niinistö, J.; Ritala, M.

    2016-09-01

    In this report we cover two special applications of Atomic Layer Deposition (ALD) thin films to solve these challenges of the very small size pixel detectors. First, we propose to passivate the p-type pixel detector with ALD grown Al2O3 field insulator with a negative oxide charge instead of using the commonly adopted p-stop or p-spray technologies with SiO2, and second, to use plasma-enhanced ALD grown titanium nitride (TiN) bias resistors instead of the punch through biasing structures. Surface passivation properties of Al2O3 field insulator was studied by Photoconductive Decay (PCD) method and our results indicate that after appropriate annealing Al2O3 provides equally low effective surface recombination velocity as thermally oxidized Si/SiO2 interface. Furthermore, with properly designed annealing steps, the TiN thin film resistors can be tuned to have up to several MΩ resistances with a few μm of physical size required in ultra-fine pitch pixel detectors.

  8. Dynamic scaling and optical properties of Zn(S, O,OH) thin film grown by chemical bath deposition

    Institute of Scientific and Technical Information of China (English)

    Zhang Yi; Li Bo-Yan; Dang Xiang-Yu; Wu Li; Jin Jing; Li Feng-Yan; Ao Jian-Ping; Sun Yun

    2011-01-01

    The scaling behavior and optical properties of Zn(S,O and OH) thin films deposited on soda-lime glass substrates by chemical bath deposition method were studied by combined roughness measurements,scanning electron microscopy and optical properties measurement.From the scaling behaviour,the value of growth scaling exponent β,0.38±0.06,was determined.This value indicated that the Zn(S,O,OH) film growth in the heterogeneous process was influenced by the surface diffusion and shadowing effect.Results of the optical properties measurements disclosed that the transmittance of the film was in the region of 70%-88% and the optical properties of the film grown for 40 min were better than those grown under other conditions.The energy band gap of the film deposited with 40 min was around 3.63 eV.

  9. Effect of Annealing on the Optical Properties of GaN Films Grown by Pulsed Laser Deposition

    Institute of Scientific and Technical Information of China (English)

    M.Baseer Haider; M.F.Al-Kuhaili; S.M.A.Durrani; Imran Bakhtiari

    2013-01-01

    In the present study,gallium nitride thin films were grown by using pulsed laser deposition.After the growth samples were annealed at 400 and 600 ℃ in the nitrogen atmosphere.Surface morphology of the as-grown and annealed samples was observed by atomic force microscopy.Post-growth annealing results in an improved surface roughness of the films.Chemical analysis of the samples was performed by X-ray photoelectron spectroscopy.Stoichiometric gallium nitride thin films were obtained for the samples annealed at 600 ℃.Optical measurements of the samples were performed to measure the band gap and optical constants of the films.Effect of annealing on the band gap and optical constants of the films was studied.

  10. Enhancement in as-grown CuInSe{sub 2} film microstructure by a three potential pulsed electrodeposition method

    Energy Technology Data Exchange (ETDEWEB)

    Palacios-Padros, A. [Department of Physical Chemistry, University of Barcelona (UB), Institute for Bioengineering of Catalonia (IBEC) Marti i Franques 1, 08028 Barcelona (Spain); Caballero-Briones, F.; Sanz, Fausto [Department of Physical Chemistry, University of Barcelona (UB), Institute for Bioengineering of Catalonia (IBEC) Marti i Franques 1, 08028 Barcelona (Spain); CIBER-BBN, Maria de Luna 11, 50018 Zaragoza (Spain)

    2010-08-15

    P-type copper indium diselenide (CuInSe{sub 2}) films have been prepared onto ITO substrates by an electrodeposition method, that sequentially applies potential pulses at the deposition potential of each element Cu, Se and In, and then step it back in cyclically to induce the solid state reaction between the elements. Two electrolyte concentrations as well as three different pulse durations were assessed. The resulting films were compared with those deposited at fixed electrode potentials. As-grown films are nanocrystalline and have an E{sub g} {proportional_to} 0.95 eV. Raman spectroscopy shows that Se and Cu-Se contents decrease while pulse duration increases and electrolyte concentration decreases. Cu-Se phases are even absent for films grown at the low electrolyte concentration. These results represent a great improvement in the film phase purity reducing the need of post-deposition treatments. (author)

  11. IR study on surface chemical properties of catalytic grown carbon nanotubes and nanofibers

    Institute of Scientific and Technical Information of China (English)

    Li-hua TENG; Tian-di TANG

    2008-01-01

    In this study, the surface chemical properties of carbon nanotubes (CNTs) and carbon nanofibers (CNFs) grown by catalytic decomposition of methane on nickel and cobalt based catalysts were studied by DRIFT (Diffuse Reflectance Infrared Fourier Transform) and transmission Infrared (IR) spectroscopy. The results show that the surface exists not only carbon-hydrogen groups, but also carboxyl, ketene or quinone (carbonyl) oxygen-containing groups. These functional groups were formed in the process of the material growth, which result in large amount of chemical defect sites on the walls.

  12. Growth mechanism of single-crystalline NiO thin films grown by metal organic chemical vapor deposition

    Science.gov (United States)

    Roffi, Teuku Muhammad; Nozaki, Shinji; Uchida, Kazuo

    2016-10-01

    Nickel oxide (NiO) thin films were grown by atmospheric-pressure metal organic chemical vapor deposition (APMOCVD). Growth was carried out using various growth parameters, including the growth temperature, the input precursor (O2/Ni) ratio, and the type of substrate material. Effects of the growth parameters on the structural and electrical properties of the films were investigated. X-ray diffraction analysis revealed that the crystal structure and quality were strongly affected by the growth temperature and the type of substrate material. At an optimized growth temperature, single-crystalline NiO films were grown on MgO(100) and MgO(111) substrates in a cube-on-cube orientation relationship, while on an Al2O3(001) substrate, the film was grown in the NiO[111] direction. The use of MgO substrates successfully suppressed the formation of twin defects, which have been frequently reported in the growth of NiO. The difference in the formation of the twin defects on MgO and Al2O3 substrates was discussed. It was observed that the resistivity dependence on crystal quality was affected by the choice of substrate material. The effects of the precursor ratio on the transmittance and resistivity of the films were also investigated. Improved transparency in the visible wavelength region and higher conductivity were found in films grown with higher O2/Ni ratios.

  13. Non-vacuum growth of graphene films using solid carbon source

    Energy Technology Data Exchange (ETDEWEB)

    Nguyen, Ba-Son [Department of Mechanical Engineering, National Cheng Kung University, 1 University Road, Tainan 701, Taiwan (China); Faculty of Mechatronics – Electronics, Lac Hong University, 10 Huynh Van Nghe Road, Bienhoa (Viet Nam); Lin, Jen-Fin, E-mail: jflin@mail.ncku.edu.tw, E-mail: dcperng@ee.ncku.edu.tw [Department of Mechanical Engineering, National Cheng Kung University, 1 University Road, Tainan 701, Taiwan (China); Center for Micro/Nano Science and Technology, National Cheng Kung University, 1 University Road, Tainan 701, Taiwan (China); Perng, Dung-Ching, E-mail: jflin@mail.ncku.edu.tw, E-mail: dcperng@ee.ncku.edu.tw [Center for Micro/Nano Science and Technology, National Cheng Kung University, 1 University Road, Tainan 701, Taiwan (China); Institute of Microelectronics and Electrical Engineering Department, National Cheng Kung University, 1 University Road, Tainan 701, Taiwan (China)

    2015-06-01

    This study demonstrates that air annealing can grow high-quality graphene films on the surface of polycrystalline nickel film with the help of an effective SiO{sub 2} capping layer. The number of graphene layers can be modulated by the amount of carbon embedded in the Ni film before annealing. Raman analysis results, transmission electron microscopy images, and electron diffraction patterns of the samples confirm that graphene films can be grown in air with an oxygen blocking layer and a 10 °C/s cooling rate in an open-vented rapid thermal annealing chamber or an open tube furnace. The high-quality low-defect air-annealing grown graphene is comparable to commercially available graphene grown via chemical vapor deposition. The proposed graphene growth using air annealing technique is simple and low-cost, making it highly attractive for mass production. It is transfer-free to a silicon substrate and can speed up graphene development, opening up new applications.

  14. The structural state of epitaxial GaP films of different polarities grown on misoriented Si(001) substrates

    Science.gov (United States)

    Loshkarev, I. D.; Vasilenko, A. P.; Trukhanov, E. M.; Kolesnikov, A. V.; Putyato, M. A.; Esin, M. Yu.; Petrushkov, M. O.

    2017-02-01

    The structure of GaP films grown by molecular-beam epitaxy on vicinal Si(1113) substrates has been studied by X-ray diffraction. It is established that the crystalline lattice of a pseudomorphic film rotates about the axis toward increasing deviation from the singular orientation, while the subsequent relaxation leads to rotation in the opposite direction. This is valid for the films of both (001) and (001¯) polarities. Differences between the surface morphologies of relaxed and pseudomorphic GaP films are revealed.

  15. Structural and optical characterization of ZrO2 thin films grown on silicon and quartz substrates

    Science.gov (United States)

    Hojabri, Alireza

    2016-09-01

    Zirconium oxide thin films were grown successfully by thermal annealing of zirconium thin films deposited on quartz and silicon substrates by direct current magnetron sputtering technique. The structural and optical properties in relation to thermal annealing times were investigated. The X-ray diffraction patterns revealed that structure of films changes from amorphous to crystalline by increase of annealing times in range 60-240 min. The composition of films was determined by Rutherford back scattering spectroscopy. Atomic force microscopy results exhibited that surface morphology and roughness of films depend on the annealing time. The refractive index of the films was calculated using Swanepoel's method. The optical band gap energy of annealed films decreased from 5.50 to 5.34 eV with increasing thermal annealing time.

  16. Ag films grown by remote plasma enhanced atomic layer deposition on different substrates

    Energy Technology Data Exchange (ETDEWEB)

    Amusan, Akinwumi A., E-mail: akinwumi.amusan@ovgu.de; Kalkofen, Bodo; Burte, Edmund P. [Institute of Micro and Sensor Systems, Otto-von-Guericke University, Universitätsplatz 2, 39106 Magdeburg (Germany); Gargouri, Hassan; Wandel, Klaus; Pinnow, Cay [SENTECH Instruments GmbH, Schwarzschildstraße 2, 12489 Berlin (Germany); Lisker, Marco [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany)

    2016-01-15

    Silver (Ag) layers were deposited by remote plasma enhanced atomic layer deposition (PALD) using Ag(fod)(PEt{sub 3}) (fod = 2,2-dimethyl-6,6,7,7,8,8,8-heptafluorooctane-3,5-dionato) as precursor and hydrogen plasma on silicon substrate covered with thin films of SiO{sub 2}, TiN, Ti/TiN, Co, Ni, and W at different deposition temperatures from 70  to 200 °C. The deposited silver films were analyzed by x-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), scanning electron microscopy (SEM), transmission electron microscopy (TEM) with energy dispersive x-ray spectroscopy, four point probe measurement, ellipsometric measurement, x-ray fluorescence (XRF), and x-ray diffraction (XRD). XPS revealed pure Ag with carbon and oxygen contamination close to the detection limit after 30 s argon sputtering for depositions made at 120 and 200 °C substrate temperatures. However, an oxygen contamination was detected in the Ag film deposited at 70 °C after 12 s argon sputtering. A resistivity of 5.7 × 10{sup −6} Ω cm was obtained for approximately 97 nm Ag film on SiO{sub 2}/Si substrate. The thickness was determined from the SEM cross section on the SiO{sub 2}/Si substrate and also compared with XRF measurements. Polycrystalline cubic Ag reflections were identified from XRD for PALD Ag films deposited at 120 and 200 °C. Compared to W surface, where poor adhesion of the films was found, Co, Ni, TiN, Ti/TiN and SiO{sub 2} surfaces had better adhesion for silver films as revealed by SEM, TEM, and AFM images.

  17. Thin multilayer CdS/ZnS films grown by SILAR technique

    Science.gov (United States)

    Valkonen, Mika P.; Lindroos, Seppo; Kanniainen, Tapio; Leskelä, Markku; Tapper, Unto; Kauppinen, Esko

    1997-11-01

    Multilayer ZnS/CdS thin films were grown on glass, ITO-covered glass and (100)GaAs substrates by successive ionic layer adsorption and reaction (SILAR) technique at room temperature and ambient pressure. The layers in multilayer thin film structures were nominally 1-6 nm thick and the amount of layers varied so that the total thickness of 100-120 nm was achieved. The films were polycrystalline according to X-ray diffraction analysis and scanning electron microscopy. The interfaces between the separate cadmium sulfide (CdS) and zinc sulfide (ZnS) layers were not sharp, but contained thin Cd xZn 1- xS solid solution layers. Annealing enhanced the mixing of the different layers and after 50 h at 300°C no separate CdS and ZnS X-ray reflections could be detected. About 20 nm thick layers could be detected as separate fields by scanning electron microscopy.

  18. Reproducibility and off-stoichiometry issues in nickelate thin films grown by pulsed laser deposition

    Science.gov (United States)

    Preziosi, Daniele; Sander, Anke; Barthélémy, Agnès; Bibes, Manuel

    2017-01-01

    Rare-earth nickelates are strongly correlated oxides displaying a metal-to-insulator transition at a temperature tunable by the rare-earth ionic radius. In PrNiO3 and NdNiO3, the transition is very sharp and shows an hysteretic behavior akin to a first-order transition. Both the temperature at which the transition occurs and the associated resistivity change are extremely sensitive to doping and therefore to off-stoichiometry issues that may arise during thin film growth. Here we report that strong deviations in the transport properties of NdNiO3 films can arise in films grown consecutively under nominally identical conditions by pulsed laser deposition; some samples show a well-developed transition with a resistivity change of up to five orders of magnitude while others are metallic down to low temperatures. Through a detailed analysis of in-situ X-ray photoelectron spectroscopy data, we relate this behavior to large levels of cationic off-stoichoimetry that also translate in changes in the Ni valence and bandwidth. Finally, we demonstrate that this lack of reproducibility can be remarkably alleviated by using single-phase NdNiO3 targets.

  19. Frictional Properties of UV illuminated ZnO Thin Films Grown by Pulsed Laser Deposition

    Science.gov (United States)

    Chiu, Hsiang-Chih; Chang, Huan-Pu; Lo, Fang-Yu; Yeh, Yu-Ting; Department of Physics, National Taiwan Normal University Collaboration

    Zinc Oxide (ZnO) nanostructures have potential applications in nano-electro-mechanical systems (NEMS) due to their unique physical properties. ZnO is also an excellent lubricant and hence a promising candidate for protective coatings in NEMS. By means of atomic force microscopy (AFM), we have investigated the frictional properties of ZnO thin films prepared by pulsed laser deposition technique. In addition, UV illumination is used to convert the surface wettability of ZnO thin films from being more hydrophobic to superhydrophilic via the photo-catalyst effect. We found that the frictional properties of the UV illuminated, superhydrophilic ZnO surface are strongly dependent on the environment humidity. While for hydrophobic ZnO, no such dependence is found. The observed frictional behaviors can be explained by the interplay between the surface roughness, environmental humidity and the presence of nanoscale capillary condensation forming between surface asperities at the tip-ZnO contact. Our results might find applications in future ZnO related NEMS. Frictional Properties of UV illuminated ZnO Thin Films Grown by Pulsed Laser Deposition.

  20. Effect of silane flow rate on structural, electrical and optical properties of silicon thin films grown by VHF PECVD technique

    Energy Technology Data Exchange (ETDEWEB)

    Gope, Jhuma [Physics of Energy Harvesting Division, CSIR-Network of Institutes for Solar Energy, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi 110012 (India); Department of Physics, Banaras Hindu University, Varanasi 221005 (India); Kumar, Sushil, E-mail: skumar@nplindia.org [Physics of Energy Harvesting Division, CSIR-Network of Institutes for Solar Energy, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi 110012 (India); Sudhakar, S.; Rauthan, C.M.S. [Physics of Energy Harvesting Division, CSIR-Network of Institutes for Solar Energy, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi 110012 (India); Srivastava, P.C. [Department of Physics, Banaras Hindu University, Varanasi 221005 (India)

    2013-08-15

    Hydrogenated silicon thin films deposited by VHF PECVD process for various silane flow rates have been investigated. The silane flow rate was varied from 5 sccm to 30 sccm, maintaining all other parameters constant. The electrical, structural and optical properties of these films were systematically studied as a function of silane flow rate. These films were characterized by Raman spectroscopy, Scanning Electron Microscopy (SEM), atomic force microscopy (AFM), Fourier transform infrared (FTIR) spectroscopy and UV–visible (UV–Vis) spectroscopy. Different crystalline volume fraction (22%–60%) and band gap (∼1.58 eV–∼1.96 eV) were achieved for silicon thin films by varying the silane concentration. A transition from amorphous to nanocrystalline silicon has been confirmed by Raman and FTIR analysis. The film grown at this transition region shows the high conductivity in the order of 10{sup −4} Ω{sup −1} cm{sup −1}. - Highlights: • Silicon films grown using VHF PECVD at various F{sub silane} (silane flow rate). • Amorphous to nanocrystalline silicon transition at F{sub silane} ∼5 sccm–10 sccm. • Deposition rate increases with the increase of F{sub silane}. • Powder formation occurred beyond 20 sccm of F{sub silane}. • Film grown at 20 sccm shows max. crystalline fraction ∼60% with E{sub g} ∼1.58 eV.

  1. Ultrafast carrier dynamics and the role of grain boundaries in polycrystalline silicon thin films grown by molecular beam epitaxy

    Science.gov (United States)

    Titova, Lyubov V.; Cocker, Tyler L.; Xu, Sijia; Baribeau, Jean-Marc; Wu, Xiaohua; Lockwood, David J.; Hegmann, Frank A.

    2016-10-01

    We have used time-resolved terahertz spectroscopy to study microscopic photoconductivity and ultrafast photoexcited carrier dynamics in thin, pure, non-hydrogenated silicon films grown by molecular beam epitaxy on quartz substrates at temperatures ranging from 335 °C to 572 °C. By controlling the growth temperature, thin silicon films ranging from completely amorphous to polycrystalline with minimal amorphous phase can be achieved. Film morphology, in turn, determines its photoconductive properties: in the amorphous phase, carriers are trapped in bandtail states on sub-picosecond time scales, while the carriers excited in crystalline grains remain free for tens of picoseconds. We also find that in polycrystalline silicon the photoexcited carrier mobility is carrier-density-dependent, with higher carrier densities mitigating the effects of grain boundaries on inter-grain transport. In a film grown at the highest temperature of 572 °C, the morphology changes along the growth direction from polycrystalline with needles of single crystals in the bulk of the film to small crystallites interspersed with amorphous silicon at the top of the film. Depth profiling using different excitation wavelengths shows corresponding differences in the photoconductivity: the photoexcited carrier lifetime and mobility are higher in the first 100-150 nm from the substrate, suggesting that thinner, low-temperature grown polycrystalline silicon films are preferable for photovoltaic applications.

  2. Electrical and mechanical stability of aluminum-doped ZnO films grown on flexible substrates by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Luka, G., E-mail: gluka@ifpan.edu.pl [Institute of Physics, Polish Academy of Sciences, Warsaw (Poland); Witkowski, B.S.; Wachnicki, L.; Jakiela, R. [Institute of Physics, Polish Academy of Sciences, Warsaw (Poland); Virt, I.S. [University of Rzeszow, Rzeszow (Poland); Drohobych Ivan Franko State Pedagogical University, Drohobych (Ukraine); Andrzejczuk, M.; Lewandowska, M. [Faculty of Materials Science and Engineering, Warsaw University of Technology, Warsaw (Poland); Godlewski, M. [Institute of Physics, Polish Academy of Sciences, Warsaw (Poland); Department of Mathematics and Natural Sciences, College of Science, Cardinal Stefan Wyszynski University, Warsaw (Poland)

    2014-08-01

    Highlights: • Transparent and conductive ZnO:Al films were grown by atomic layer deposition. • The films were grown on flexible substrates at low growth temperatures (110–140 °C). • So-obtained films have low resistivities, of the order of 10{sup −3} Ω cm. • Bending tests indicated a critical bending radius of ≈1.2 cm. • Possible sources of the film resistivity changes upon bending are proposed. - Abstract: Aluminum-doped zinc oxide (AZO) films were grown on polyethylene terephthalate (PET) substrates by atomic layer deposition (ALD) at low deposition temperatures (110–140 °C). The films have low resistivities, ∼10{sup −3} Ω cm, and high transparency (∼90%) in the visible range. Bending tests indicated a critical bending radius of ≈1.2 cm, below which the resistivity changes became irreversible. The films deposited on PET with additional buffer layer are more stable upon bending and temperature changes.

  3. Studies to Enhance Superconductivity in Thin Film Carbon

    Science.gov (United States)

    Pierce, Benjamin; Brunke, Lyle; Burke, Jack; Vier, David; Steckl, Andrew; Haugan, Timothy

    2012-02-01

    With research in the area of superconductivity growing, it is no surprise that new efforts are being made to induce superconductivity or increase transition temperatures (Tc) in carbon given its many allotropic forms. Promising results have been published for boron doping in diamond films, and phosphorus doping in highly oriented pyrolytic graphite (HOPG) films show hints of superconductivity.. Following these examples in the literature, we have begun studies to explore superconductivity in thin film carbon samples doped with different elements. Carbon thin films are prepared by pulsed laser deposition (PLD) on amorphous SiO2/Si and single-crystal substrates. Doping is achieved by depositing from (C1-xMx) single-targets with M = B4C and BN, and also by ion implantation into pure-carbon films. Previous research had indicated that Boron in HOPG did not elicit superconducting properties, but we aim to explore that also in thin film carbon and see if there needs to be a higher doping in the sample if trends were able to be seen in diamond films. Higher onset temperatures, Tc , and current densities, Jc, are hoped to be achieved with doping of the thin film carbon with different elements.

  4. Control of Defects in Aluminum Gallium Nitride ((Al)GaN) Films on Grown Aluminum Nitride (AlN) Substrates

    Science.gov (United States)

    2013-02-01

    like HEMTs . A nanolayer of AlGaN over GaN provides extra 2DEG charge density because of the piezoelectric effect of the AlGaN layer. The higher...Control of Defects in Aluminum Gallium Nitride ((Al) GaN ) Films on Grown Aluminum Nitride (AlN) Substrates by Iskander G. Batyrev, Chi-Chin Wu...Aluminum Gallium Nitride ((Al) GaN ) Films on Grown Aluminum Nitride (AlN) Substrates Iskander G. Batyrev and N. Scott Weingarten Weapons and

  5. Synthesis of as-grown superconducting MgB_2 thin films by molecular beam epitaxy in UHV conditions

    OpenAIRE

    Harada, Y.; Udsuka, M.; Nakanishi, Y.; Yoshizawa, M.

    2004-01-01

    As-grown superconducting MgB_2 thin films have been grown on SrTiO_3(001), MgO(001), and Al_2O_3(0001) substrates by a molecular beam epitaxy (MBE) method with novel co-evaporation conditions of low deposition rate in ultra-high vacuum. The structural and physical properties of the films were studied by RHEED, XRD, electrical resistivity measurements, and SQUID magnetometer. The RHEED patterns indicate three-dimensional growth for MgB_2. The highest T_c determined by resistivity measurement w...

  6. Ionization potentials of transparent conductive indium tin oxide films covered with a single layer of fluorine-doped tin oxide nanoparticles grown by spray pyrolysis deposition

    OpenAIRE

    2005-01-01

    Indium tin oxide (ITO) films deposited with single layers of monodispersive fluorine-doped tin oxide (FTO) nanoparticles of several nanometers in size were grown on glass substrates by intermittent spray pyrolysis deposition using conventional atomizers. These films have significantly higher ionization potentials than the bare ITO and FTO films grown using the same technique. The ITO films covered with FTO particles of 7 nm in average size show an ionization potential of 5.01 eV, as compared ...

  7. Fabricating superconducting interfaces between artificially grown LaAlO3 and SrTiO3 thin films

    Directory of Open Access Journals (Sweden)

    Danfeng Li

    2014-01-01

    Full Text Available Realization of a fully metallic two-dimensional electron gas (2DEG at the interface between artificially grown LaAlO3 and SrTiO3 thin films has been an exciting challenge. Here we present for the first time the successful realization of a superconducting 2DEG at interfaces between artificially grown LaAlO3 and SrTiO3 thin films. Our results highlight the importance of two factors—the growth temperature and the SrTiO3 termination. We use local friction force microscopy and transport measurements to determine that in normal growth conditions the absence of a robust metallic state at low temperature in the artificially grown LaAlO3/SrTiO3 interface is due to the nanoscale SrO segregation occurring on the SrTiO3 film surface during the growth and the associated defects in the SrTiO3 film. By adopting an extremely high SrTiO3 growth temperature, we demonstrate a way to realize metallic, down to the lowest temperature, and superconducting 2DEG at interfaces between LaAlO3 layers and artificially grown SrTiO3 thin films. This study paves the way to the realization of functional LaAlO3/SrTiO3 superlattices and/or artificial LaAlO3/SrTiO3 interfaces on other substrates.

  8. Low Microwave Surface Resistance in NdBa2Cu3O7-d Films Grown by Molecular Beam Epitaxy

    OpenAIRE

    2004-01-01

    We report the growth of NdBa2Cu3O7-d films on (100) MgO substrate by Molecular Beam Epitaxy (MBE). Large area NdBa2Cu3O7-d films with homogeneous superconducting properties were grown by precise control of stoichiometry and the optimisation of growth parameters. The stoichiometric ratio of Nd:Ba:Cu close to 1:2:3 yields films with TC of 94 K and JC values above 3.5 MA/cm2 at 77 K on bare MgO substrate. The NdBa2Cu3O7-d films grown under optimised conditions had excellent in-plane texture and ...

  9. Effects of Annealing Temperature on Properties of ZnO Thin Films Grown by Pulsed Laser Deposition

    Institute of Scientific and Technical Information of China (English)

    ZHUANG Hui-zhao; XUE Shou-bin; XUE Cheng-shan; HU Li-jun; LI Bao-li; ZHANG Shi-ying

    2007-01-01

    ZnO thin films are deposited on n-Si(111) substrates by pulsed laser deposition(PLD) system.Then the samples are annealed at different temperatures in air ambient and their properties are investigated particularly as a function of annealing temperature.The microstructure,morphology and optical properties of the as-grown ZnO films are studied by X-ray diffraction(XRD),atomic force microscope(AFM),Fourier transform infrared spectroscopy(FTIR) and photoluminescence(PL) spectra.The results show that the as-grown ZnO films have a hexagonal wurtzite structure with a preferred c-axis orientation.Moreover,the diameters of the ZnO crystallites become larger and the crystal quality of the ZnO films is improved with the increase of annealing temperature.

  10. Electrical and optical properties of VO2 thin films grown on various sapphire substrates by using RF sputtering deposition

    Science.gov (United States)

    Jung, Dae Ho; So, Hyeon Seob; Ko, Kun Hee; Park, Jun Woo; Lee, Hosun; Nguyen, Trang Thi Thu; Yoon, Seokhyun

    2016-12-01

    VO2 thin films were grown on a-, c-, m-, and r-plane sapphire and SiO2/Si substrates under identical conditions by using RF sputtering deposition from a VO2 target. The structural and the morphological properties of all VO2 films were investigated. The grain sizes of the VO2 films varied between 268 nm and 355 nm depending on the substrate's orientation. The electrical and the optical properties of all VO2 thin films were examined in detail. The metal-insulator transition temperature (TMI) varied with the substrate's orientation. The (200)/(bar 211 )-oriented VO2 films on the a-plane sapphire showed the lowest TMI of about 329.3 K (56.3 °C) while the (020)/(002)-VO2 films on the c-plane sapphire displayed the highest TMI of about 339.6 K (66.6 °C). The VO2 films showed reversible changes in the resistivity as large as 1.19 × 105 and a hysteresis of 2 K upon traversing the transition temperature. The variations observed in the TMI with respect to the substrate's orientation were due to changes in the lattice strain and the grain size distribution. Raman spectroscopy showed that metal (rutile) - insulator (monoclinic) transitions occurred via the M2 phase for VO2 films on the c-plane substrate rather than the direct M1 to rutile transition. The shifts in the phonon frequencies of the VO2 film grown on various sapphire substrates were explained in terms of the strain along the V-V atomic bond direction (cR). Our work shows a possible correlation between the transition parameters ( e.g., TMI, sharpness, and hysteresis width) and the width ( σ) of the grain size distribution. It also shows a possible correlation between the TMI and the resistivities at the insulating and the metallic phases for VO2 films grown on various sapphire substrates.

  11. Magnetotransport in an aluminum thin film on a GaAs substrate grown by molecular beam epitaxy

    Directory of Open Access Journals (Sweden)

    Lin Sheng-Di

    2011-01-01

    Full Text Available Abstract Magnetotransport measurements are performed on an aluminum thin film grown on a GaAs substrate. A crossover from electron- to hole-dominant transport can be inferred from both longitudinal resistivity and Hall resistivity with increasing the perpendicular magnetic field B. Also, phenomena of localization effects can be seen at low B. By analyzing the zero-field resistivity as a function of temperature T, we show the importance of surface scattering in such a nanoscale film.

  12. Pulsed laser deposition of carbon nanotube and polystyrene-carbon nanotube composite thin films

    Science.gov (United States)

    Stramel, A. A.; Gupta, M. C.; Lee, H. R.; Yu, J.; Edwards, W. C.

    2010-12-01

    In this work, we report on the fabrication of carbon nanotube thin films via pulsed laser deposition using a pulsed, diode pumped, Tm:Ho:LuLF laser with 2 μm wavelength. The thin films were deposited on silicon substrates using pure carbon nanotube targets and polystyrene-carbon nanotube composite targets. Raman spectra, scanning electron micrographs, and transmission electron micrographs show that carbon nanotubes are present in the deposited thin films, and that the pulsed laser deposition process causes minimal degradation to the quality of the nanotubes when using pure carbon nanotube targets.

  13. SiC nanowires grown on activated carbon in a polymer pyrolysis route

    Energy Technology Data Exchange (ETDEWEB)

    Li Gongyi, E-mail: nudtlgy@gmail.co [State Key Laboratory of Advanced Ceramic Fibers and Composites, College of Aerospace and Materials Engineering, National University of Defense Technology, No. 109 Deya Road, Shangdalong Street, Kaifu District, Changsha 410073 (China); Li Xiaodong, E-mail: xdli0153@sina.co [State Key Laboratory of Advanced Ceramic Fibers and Composites, College of Aerospace and Materials Engineering, National University of Defense Technology, No. 109 Deya Road, Shangdalong Street, Kaifu District, Changsha 410073 (China); Wang Hao; Xing Xin; Yang Yong [State Key Laboratory of Advanced Ceramic Fibers and Composites, College of Aerospace and Materials Engineering, National University of Defense Technology, No. 109 Deya Road, Shangdalong Street, Kaifu District, Changsha 410073 (China)

    2010-01-15

    beta-SiC nanowires are a novel type of photocatalysts. However, they tend to be entangled together especially at high concentrations when dispersed in water, which may reduce the photocatalytic activity. It is reasonable to expect that beta-SiC nanowires would provide better photocatalytic activity if they are grown on activated carbon. In the letter we report the successful synthesis of quantities of beta-SiC nanowires grown on the surfaces of the activated carbon by pyrolysis of polycarbosilane at 1300 deg. C. The nanowires, with the diameters of 50-100 nm and the length of tens of micrometers, are composed of single crystal beta-SiC along the <1 1 1> direction. Both the VLS and the VS mechanisms were employed to interpret the nanowires growth.

  14. Structural and optical characterizations of InPBi thin films grown by molecular beam epitaxy.

    Science.gov (United States)

    Gu, Yi; Wang, Kai; Zhou, Haifei; Li, Yaoyao; Cao, Chunfang; Zhang, Liyao; Zhang, Yonggang; Gong, Qian; Wang, Shumin

    2014-01-13

    InPBi thin films have been grown on InP by gas source molecular beam epitaxy. A maximum Bi composition of 2.4% is determined by Rutherford backscattering spectrometry. X-ray diffraction measurements show good structural quality for Bi composition up to 1.4% and a partially relaxed structure for higher Bi contents. The bandgap was measured by optical absorption, and the bandgap reduction caused by the Bi incorporation was estimated to be about 56 meV/Bi%. Strong and broad photoluminescence signals were observed at room temperature for samples with xBi < 2.4%. The PL peak position varies from 1.4 to 1.9 μm, far below the measured InPBi bandgap.

  15. Thermal activation of nitrogen acceptors in ZnO thin films grown by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Dangbegnon, J.K.; Talla, K.; Botha, J.R. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth (South Africa)

    2010-06-15

    Nitrogen doping in ZnO is inhibited by spontaneous formation of compensating defects. Perfect control of the nitrogen doping concentration is required, since a high concentration of nitrogen could induce the formation of donor defects involving nitrogen. In this work, the effect of post-growth annealing in oxygen ambient on ZnO thin films grown by Metalorganic Chemical Vapor Deposition, using NO as both oxidant and nitrogen dopant, is studied. After annealing at 700 C and above, low-temperature photoluminescence shows the appearance of a transition at {proportional_to}3.23 eV which is interpreted as pair emission involving a nitrogen acceptor. A second transition at {proportional_to}3.15 eV is also discussed. This work suggests annealing as a potential means for p-type doping using nitrogen (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  16. Monitoring structural defects and crystallinity of carbon nanotubes in thin films

    Indian Academy of Sciences (India)

    S S Mahajan; M D Bambole; S P Gokhale; A B Gaikwad

    2010-03-01

    We report the influence of catalyst formulation and reaction temperature on the formation of carbon nanotube (CNT) thin films by the chemical vapour deposition (CVD) method. Thin films of CNTs were grown on Fe–Mo/Al2O3-coated silicon wafer by thermal decomposition of methane at different temperatures ranging from 800 to 1000°C. The electron microscopic investigations, SEM as well as HRTEM, of the as-grown CNT thin films revealed the growth of uniform multi-walled CNTs in abundance. The intensity ratio of D-band to G-band and FWHM of G-band through Raman measurements clearly indicated the dependency of structural defects and crystallinity of CNTs in thin films on the catalyst formulation and CVD growth temperature. The results suggest that thin films of multi-walled CNTs with negligible amount of defects in the nanotube structure and very high crystallinity can be obtained by thermal CVD process at 925°C.

  17. Properties of MgB{sub 2} films grown at various temperatures by hybrid physical-chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Ke; Veldhorst, Menno; Li, Qi; Xi, X X [Department of Physics, Pennsylvania State University, University Park, PA 16802 (United States); Lee, Che-Hui; Lamborn, Daniel R; DeFrain, Raymond; Redwing, Joan M [Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802 (United States)

    2008-09-15

    A hybrid physical-chemical vapour deposition (HPCVD) system consisting of separately controlled Mg-source heater and substrate heater is used to grow MgB{sub 2} thin films and thick films at various temperatures. We are able to grow superconducting MgB{sub 2} thin films at temperatures as low as 350 deg. C with a T{sub c0} of 35.5 K. MgB{sub 2} films up to 4 {mu}m in thickness grown at 550 deg. C have J{sub c} over 10{sup 6} A cm{sup -2} at 5 K and zero applied field. The low deposition temperature of MgB{sub 2} films is desirable for all-MgB{sub 2} tunnel junctions and MgB{sub 2} thick films are important for applications in coated conductors.

  18. Hydrogen influence on the electrical and optical properties of ZnO thin films grown under different atmospheres

    Energy Technology Data Exchange (ETDEWEB)

    Lorite, I., E-mail: lorite@physik.uni-leipzig; Wasik, J.; Michalsky, T.; Schmidt-Grund, R.; Esquinazi, P.

    2014-04-01

    In this work we studied the changes of the electrical and optical properties after hydrogen plasma treatment of polycrystalline ZnO thin films grown under different atmosphere conditions. The obtained results show that the gas used during the growth process plays an important role in the way hydrogen is incorporated in the films. The hydrogen doping can produce radiative and non-radiative defects that reduce the UV emission in ZnO films grown in oxygen atmosphere but it passivates defects created when the films are grown in nitrogen atmosphere. Impedance spectroscopy measurements show that these effects are related to regions where hydrogen is mostly located, either at the grain cores or boundaries. We discuss how hydrogen strongly influences the initial semiconducting behavior of the ZnO thin films. - Highlights: • Effectiveness of hydrogen treatment depends on the thin film growth conditions. • There is no detection of secondary phases after treatment by IS. • Hydrogen incorporation changes optical and electrical ZnO properties.

  19. Characteristics of Fluorine-doped tin oxide thin films grown by Streaming process for Electrodeless Electrochemical Deposition

    Science.gov (United States)

    Yusuf, Gbadebo; Khalilzadeh-Rezaie, Farnood; Cleary, Justin W.; Oladeji, Isaiah O.; Suu, Koukou; Schoenfeld, Winston V.; Peale, Robert E.; Awodugba, Ayodeji O.

    2015-04-01

    This work investigated the characteristics of SnO2: F films grown by Streaming Process for Electrodeless Electrochemical Deposition (SPEED). Stannic chloride (SnCl4) and ammonium fluoride (NH4 F) was dissolved in a mixture of deionized water and organic solvents. The preheated substrate temperature was varied between 450 and 530° C. High quality SnO2: F films were grown at all the substrate temperatures studied. The typical film thickness was 250 nm. XRD shows that the grown films are polycrystalline SnO2 with a tetragonal crystal structure. The average optical transmission of the films was around 93% throughout the wavelength of 400 to 1000 nm. The lowest electrical resistivity achieved was 6 x 10-4 Ω cm. The Hall measurements showed that the film is an n-type semiconductor, with the highest carrier mobility of 8.3 cm2/V.s, and concentration of 1 x 1021 cm-3. The direct band gap was determined to be 4 eV from the transmittance spectrum.

  20. Zinc sulfide and terbium-doped zinc sulfide films grown by traveling wave reactor atomic layer epitaxy

    CERN Document Server

    Yun, S J; Nam, K S

    1998-01-01

    Zinc sulfide (ZnS) and terbium-doped ZnS (ZnS:Tb) thin films were grown by traveling wave reactor atomic layer epitaxy (ALE). In the present work, ZnCl sub 2 , H sub 2 S, and tris (2,2,6,6-tetramethyl-3,5-heptandionato) terbium (Tb(tmhd) sub 3) were used as the precursors. The dependence of crystallinity and Cl content of ZnS films was investigated on the growth temperature. ZnS and ZnS:Tb films grown at temperatures ranging from 400 to 500 .deg. C showed a hexagonal-2H crystalline structure. The crystallinity of ZnS film was greatly enhanced as the temperature increased. At growth temperatures higher than 450.deg.C, the films showed preferred orientation with mainly (002) diffraction peak. The Cl content decreased from approximately 9 to 1 at.% with the increase in growth temperature from 400 to 500 .deg. C. The segregation of Cl near the surface region and the incorporation of O from Tb(tmhd) sub 3 during ALE process were also observed using Auger electron spectroscopy. The ALE-grown ZnS and ZnS:Tb films re...

  1. Epitaxially grown polycrystalline silicon thin-film solar cells on solid-phase crystallised seed layers

    Science.gov (United States)

    Li, Wei; Varlamov, Sergey; Xue, Chaowei

    2014-09-01

    This paper presents the fabrication of poly-Si thin film solar cells on glass substrates using seed layer approach. The solid-phase crystallised P-doped seed layer is not only used as the crystalline template for the epitaxial growth but also as the emitter for the solar cell structure. This paper investigates two important factors, surface cleaning and intragrain defects elimination for the seed layer, which can greatly influence the epitaxial grown solar cell performance. Shorter incubation and crystallisation time is observed using a simplified RCA cleaning than the other two wet chemical cleaning methods, indicating a cleaner seed layer surface is achieved. Cross sectional transmission microscope images confirm a crystallographic transferal of information from the simplified RCA cleaned seed layer into the epi-layer. RTA for the SPC seed layer can effectively eliminate the intragrain defects in the seed layer and improve structural quality of both of the seed layer and the epi-layer. Consequently, epitaxial grown poly-Si solar cell on the RTA treated seed layer shows better solar cell efficiency, Voc and Jsc than the one on the seed layer without RTA treatment.

  2. Comparison of stress states in GaN films grown on different substrates: Langasite, sapphire and silicon

    Science.gov (United States)

    Park, Byung-Guon; Saravana Kumar, R.; Moon, Mee-Lim; Kim, Moon-Deock; Kang, Tae-Won; Yang, Woo-Chul; Kim, Song-Gang

    2015-09-01

    We demonstrate the evolution of GaN films on novel langasite (LGS) substrate by plasma-assisted molecular beam epitaxy, and assessed the quality of grown GaN film by comparing the experimental results obtained using LGS, sapphire and silicon (Si) substrates. To study the substrate effect, X-ray diffraction (XRD), scanning electron microscopy (SEM), Raman spectroscopy and photoluminescence (PL) spectra were used to characterize the microstructure and stress states in GaN films. Wet etching of GaN films in KOH solution revealed that the films deposited on GaN/LGS, AlN/sapphire and AlN/Si substrates possess Ga-polarity, while the film deposited on GaN/sapphire possess N-polarity. XRD, Raman and PL analysis demonstrated that a compressive stress exist in the films grown on GaN/LGS, AlN/sapphire, and GaN/sapphire substrates, while a tensile stress appears on AlN/Si substrate. Comparative analysis showed the growth of nearly stress-free GaN films on LGS substrate due to the very small lattice mismatch (~3.2%) and thermal expansion coefficient difference (~7.5%). The results presented here will hopefully provide a new framework for the further development of high performance III-nitride-related devices using GaN/LGS heteroepitaxy.

  3. A novel processing of carbon nanotubes grown on molecular sieve coated porous ceramics

    Science.gov (United States)

    Mazumder, Sangram; Sarkar, Naboneeta; Park, Jung Gyu; Zhao, Wei; Kim, Sukyoung; Kim, Ik Jin

    2015-08-01

    The present study focuses on the growth of carbon nanotubes (CNTs) on Fe-containing zeolites coated porous ceramics by implementing three different and independent techniques, successively. Direct foaming-derived porous ceramics were subjected to hydrothermal reaction for on-site growth of NaA zeolites within it. The porous ceramics-zeolite composite was subjected to ion-exchange reaction to obtain the catalyst for CNT synthesis. Multi-walled CNTs (MWCNTs) were grown by catalytic chemical vapour deposition (CCVD) process using acetylene as carbon source. Microstructural, thermogravimetric and spectroscopic analyses showed distinctive differences in terms of hollow structural feature, yield and crystallinity of the MWCNTs with different reaction temperatures.

  4. Effect of growth temperature on defects in epitaxial GaN film grown by plasma assisted molecular beam epitaxy

    Directory of Open Access Journals (Sweden)

    S. S. Kushvaha

    2014-02-01

    Full Text Available We report the effect of growth temperature on defect states of GaN epitaxial layers grown on 3.5 μm thick GaN epi-layer on sapphire (0001 substrates using plasma assisted molecular beam epitaxy. The GaN samples grown at three different substrate temperatures at 730, 740 and 750 °C were characterized using atomic force microscopy and photoluminescence spectroscopy. The atomic force microscopy images of these samples show the presence of small surface and large hexagonal pits on the GaN film surfaces. The surface defect density of high temperature grown sample is smaller (4.0 × 108 cm−2 at 750 °C than that of the low temperature grown sample (1.1 × 109 cm−2 at 730 °C. A correlation between growth temperature and concentration of deep centre defect states from photoluminescence spectra is also presented. The GaN film grown at 750 °C exhibits the lowest defect concentration which confirms that the growth temperature strongly influences the surface morphology and affects the optical properties of the GaN epitaxial films.

  5. Effect of growth temperature on defects in epitaxial GaN film grown by plasma assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Kushvaha, S. S., E-mail: kushvahas@nplindia.org; Pal, P.; Shukla, A. K.; Joshi, Amish G.; Gupta, Govind; Kumar, M.; Singh, S.; Gupta, Bipin K.; Haranath, D. [CSIR- National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi, India 110012 (India)

    2014-02-15

    We report the effect of growth temperature on defect states of GaN epitaxial layers grown on 3.5 μm thick GaN epi-layer on sapphire (0001) substrates using plasma assisted molecular beam epitaxy. The GaN samples grown at three different substrate temperatures at 730, 740 and 750 °C were characterized using atomic force microscopy and photoluminescence spectroscopy. The atomic force microscopy images of these samples show the presence of small surface and large hexagonal pits on the GaN film surfaces. The surface defect density of high temperature grown sample is smaller (4.0 × 10{sup 8} cm{sup −2} at 750 °C) than that of the low temperature grown sample (1.1 × 10{sup 9} cm{sup −2} at 730 °C). A correlation between growth temperature and concentration of deep centre defect states from photoluminescence spectra is also presented. The GaN film grown at 750 °C exhibits the lowest defect concentration which confirms that the growth temperature strongly influences the surface morphology and affects the optical properties of the GaN epitaxial films.

  6. Sputtering deposition and characterization of ultrathin amorphous carbon films

    Science.gov (United States)

    Lu, Wei

    1999-11-01

    This dissertation focuses on experimental investigations of ultrathin, ultrasmooth amorphous carbon (a-C) films deposited on Si(100) substrates by radio frequency (RF) sputtering and characterization of the nanomechanical and nanotribological properties and thermal stability of the films. Ultrathin a-C films of thickness 5--100 nm and typical root-mean-square roughness of 0.15--1 nm were deposited on ultrasmooth Si(100) substrates using pure argon as the sputtering gas. A low-pressure RF argon discharge model was used to analyze the plasma parameters in the film growth environment. These plasma parameters correlate the deposition conditions with the film growth processes. Atomic force microscopy (AFM) and surface force microscopy (SFM) were used to characterize the nanomechanical and nanotribological properties of the a-C films. X-ray photoelectron spectroscopy (XPS) was used to investigate the compositions and microstructures of the films. Sputter-etching measurements of the a-C films by energetic argon ion bombardment were used to study the surface binding energy of carbon atoms in a-C films deposited under different conditions. The dependence of film properties on deposition conditions was studied, and relations between nanomechanical and nanotribological properties were discussed in terms of a modified deformation index. The deformation and nanotribology mechanisms of the a-C films were compared with those of other films, such as TiC and Cr films (both 100 nm thick), and bulk Si(100). Reactive RF sputtering of nitrogenated amorphous carbon (a-CNx) films was investigated by introducing nitrogen into the a-C films during film growth by using an argon-nitrogen gas mixture as the sputtering gas. The alloying effect of nitrogen on the film growth and properties, such as hardness and surface energy, was studied and interpreted in terms of the changes in the plasma environment induced due to differences in the composition of the sputtering gas mixture. The thermal

  7. Effect of residual stress on the microstructure of GaN epitaxial films grown by pulsed laser deposition

    Science.gov (United States)

    Wang, Haiyan; Wang, Wenliang; Yang, Weijia; Zhu, Yunnong; Lin, Zhiting; Li, Guoqiang

    2016-04-01

    The stress-free GaN epitaxial films have been directly grown by pulsed laser deposition (PLD) at 850 °C, and the effect of different stress on the microstructure of as-grown GaN epitaxial films has been explored in detail. The as-grown stress-free GaN epitaxial films exhibit very smooth surface without any particles and grains, which is confirmed by the smallest surface root-mean-square roughness of 2.3 nm measured by atomic force microscopy. In addition, they also have relatively high crystalline quality, which is proved by the small full-width at half maximum values of GaN(0002) and GaN (10 1 bar 2) X-ray rocking curves as 0.27° and 0.68°, respectively. However, when the growth temperature is lower or higher than 850 °C, internal or thermal stress would be increased in as-grown GaN epitaxial films. To release the larger stress, a great number of dislocations are generated. Many irregular particulates, hexagonal GaN gains and pits are therefore produced on the films surface, and the crystalline quality is greatly reduced consequently. This work has demonstrated the direct growth of stress-free GaN epitaxial films with excellent surface morphology and high crystalline quality by PLD, and presented a comprehensive study on the origins and the effect of stress in GaN layer. It is instructional to achieve high-quality nitride films by PLD, and shows great potential and broad prospect for the further development of high-performance GaN-based devices.

  8. Low-temperature, vapor-liquid-solid, laterally grown silicon films using alloyed catalysts

    Science.gov (United States)

    LeBoeuf, Jerome L.; Brodusch, Nicolas; Gauvin, Raynald; Quitoriano, Nathaniel J.

    2014-12-01

    Using amorphous oxide templates known as micro-crucibles which confine a vapor-liquid-solid catalyst to a specific geometry, two-dimensional silicon thin-films of a single orientation have been grown laterally over an amorphous substrate and defects within crystals have been necked out. The vapor-liquid-solid catalysts consisted nominally of 99% gold with 1% titanium, chromium, or aluminum, and each alloy affected the processing of micro-crucibles and growth within them significantly. It was found that chromium additions inhibited the catalytic effect of the gold catalysts, titanium changed the morphology of the catalyst during processing and aluminum stabilized a potential third phase in the gold-silicon system upon cooling. Two mechanisms for growing undesired nanowires were identified both of which hindered the VLS film growth, fast silane cracking rates and poor gold etching, which left gold nanoparticles near the gold-vapor interface. To reduce the silane cracking rates, growth was done at a lower temperature while an engineered heat and deposition profile helped to reduce NWs caused by the second mechanism. Through experimenting with catalyst compositions, the fundamental mechanisms which produce concentration gradients across the gold-silicon alloy within a given micro-crucible have been proposed. Using the postulated mechanisms, micro-crucibles were designed which promote high-quality, single crystal growth of semiconductors.

  9. Nonequilibrium critical behavior of magnetic thin films grown in a temperature gradient

    Science.gov (United States)

    Candia, Julián; Albano, Ezequiel V.

    2012-08-01

    We investigate the irreversible growth of (2 + 1)-dimensional magnetic thin films under the influence of a transverse temperature gradient, which is maintained by thermal baths across a direction perpendicular to the direction of growth. Therefore, different longitudinal layers grow at different temperatures between T1 and T2, where {T}_{1}\\lt {T}_{{c}}^{{hom}}\\lt {T}_{2} and {T}_{{c}}^{{hom}}=0.6 9(1) is the critical temperature of films grown in homogeneous thermal baths. We find a far-from-equilibrium continuous order-disorder phase transition driven by the thermal bath gradient. We characterize this gradient-induced critical behavior by means of standard finite-size scaling procedures, which lead to the critical temperature Tc = 0.84(2) and a new universality class consistent with the set of critical exponents ν = 3/2, γ = 5/2, and β = 1/4. In order to gain further insight into the effects of the temperature gradient, we also develop a bond model that captures the magnetic film’s growth dynamics. Our findings show that the interplay of geometry and thermal bath asymmetries leads to growth bond flux asymmetries and the onset of transverse ordering effects that explain qualitatively the shift observed in the critical temperature. The relevance of these mechanisms is further confirmed by a finite-size scaling analysis of the interface width, which shows that the growing sites of the system define a self-affine interface.

  10. Piezoresistive Effect of Doped carbon Nanotube/Cellulose Films

    Institute of Scientific and Technical Information of China (English)

    王万录; 廖克俊; 李勇; 王永田

    2003-01-01

    The strain-induced resistance changes in iodine-doped and undoped carbon nanotube films were investigated by a three-point bending test. Carbon nanotubes were fabricated by hot filament chemical vapour deposition. The experimental results showed that there has a striking piezoresistive effect in carbon nanotube films. The gauge factor for I-doped and undoped carbon nanotube films under 500 microstrain was about 125 and 65 respectively at room temperature, exceeding that of polycrystalline silicon (30) at 35℃. The origin of the piezoresistivity in the films may be ascribed to a strain-induced change in the band gap for the doped tubes and to the intertube contact resistance for the undoped tubes.

  11. Structural characteristics of single crystalline GaN films grown on (111) diamond with AlN buffer

    DEFF Research Database (Denmark)

    Pécz, Béla; Tóth, Lajos; Barna, Árpád;

    2013-01-01

    Hexagonal GaN films with the [0001] direction parallel to the surface normal were grown on (111) oriented single crystalline diamond substrates by plasma-assisted molecular beam epitaxy. Pre-treatments of the diamond surface with the nitrogen plasma beam, prior the nucleation of a thin AlN layer,...

  12. Irradiation of the amorphous carbon films by picosecond laser pulses

    Energy Technology Data Exchange (ETDEWEB)

    Marcinauskas, L., E-mail: liutauras.marcinauskas@ktu.lt [Kaunas University of Technology, Studentu 50, LT-51368 Kaunas (Lithuania); Grigonis, A. [Kaunas University of Technology, Studentu 50, LT-51368 Kaunas (Lithuania); Račiukaitis, G.; Gedvilas, M. [Center for Physical Sciences and Technology, Savanoriu Ave. 231, LT-02300 Vilnius (Lithuania); Vinciūnaitė, V. [Kaunas University of Technology, Studentu 50, LT-51368 Kaunas (Lithuania)

    2015-10-30

    The effect of a picosecond laser irradiation on structure modification of diamond-like carbon (DLC) and graphite-like carbon (GLC) films was analyzed in this work. The DLC films were irradiated by Nd:YVO{sub 4} laser operating at the 532 nm wavelength with the picosecond (10 ps) pulse duration at the fluence in the range of (0.08–0.76) J/cm{sup 2}. The GLC films were irradiated only at the fluence of 0.76 J/cm{sup 2}. The different pulse number (1, 10, and 100) was used for irradiation the films. The micro-Raman spectroscopy measurements indicated that the laser irradiation led to rearrangement of the sp{sup 3} C–C bonds to the sp{sup 2} C=C bonds in the DLC films. The formation of silicon carbide (SiC) was found in the irradiated spot after 10 and 100 pulses. Modifications in the structure of the DLC film took place even in the areas with low intensity of the Gaussian beam wings (heat affected areas). The increase in the oxygen concentration up to ten times was detected in the heat affected areas after 100 pulses. Opposite to that, the laser irradiation decreased the oxygen concentration and smoothened the surface microrelief of the GLC films. The bonding type remained unchanged in the GLC films even after irradiation with 100 pulses per spot. - Highlights: • The picosecond laser irradiation led to the rearrangement of sp{sup 3} C-C to the sp{sup 2} C = C bonds in the diamond-like carbon film. • The ps-laser irradiation of the DLC films stipulates appearance of the aromatic carbon structures. • The bonding type of the graphite-like carbon films remained unchanged even after ps laser irradiation with 100 pulses.

  13. Laser MBE-grown yttrium iron garnet films on GaN: characterization of the crystal structure and magnetic properties

    Science.gov (United States)

    Kaveev, A. K.; Bursian, V. E.; Gastev, S. V.; Krichevtsov, B. B.; Suturin, S. M.; Volkov, M. P.; Sokolov, N. S.

    2016-07-01

    Yttrium iron garnet (YIG) films were grown on GaN substrates using the laser molecular beam epitaxy method. X-ray diffraction data showed polycrystalline YIG layers without additional structural modifications. The magnetic properties of the YIG films were studied at room temperature with the aid of a vibration sample magnetometer, the magneto-optical Kerr effect and ferromagnetic resonance methods. ‘Easy-plane’-type magnetic anisotropy was found in the films. The gyromagnetic ratio and 4 πMS value were calculated.

  14. An investigation of structural properties of GaN films grown on patterned sapphire substrates by MOVPE

    Science.gov (United States)

    Törmä, P. T.; Ali, M.; Svensk, O.; Sintonen, S.; Kostamo, P.; Suihkonen, S.; Sopanen, M.; Lipsanen, H.; Odnoblyudov, M. A.; Bougrov, V. E.

    2009-12-01

    GaN films were fabricated by metal organic vapor phase epitaxy (MOVPE) on patterned sapphire substrates (PSSs) with either direct or inverse type patterned structures. Both of these two types of PSSs had their own unique GaN growth process which depart from the standard growth on the planar c-plane. GaN films on PSSs showed decreased threading dislocation (TD) density. However, differences between the crystal quality of the GaN films grown on PSSs were observed. It was also found out with one of the pattern type that the TD density varied laterally and followed the periodicity of the pattern on the sapphire surface.

  15. Electron backscatter diffraction analysis applied to [0 0 1] magnetite thin films grown on MgO substrates

    Science.gov (United States)

    Koblischka-Veneva, A.; Koblischka, M. R.; Zhou, Y.; Murphy, S.; Mücklich, F.; Hartmann, U.; Shvets, I. V.

    2007-09-01

    Electron backscatter diffraction (EBSD) analysis is applied to [0 0 1] oriented magnetite thin films grown on MgO substrates. A high image quality of the Kikuchi patterns was achieved enabling multi-phase scans. Several types of magnetite thin films were analyzed; one as-grown and the others after different annealing steps in oxygen atmosphere. From the EBSD mappings, we learn that the optimum orientation in [0 0 1]-direction is not yet achieved for the as-grown sample, but develops upon oxygen treatment. Furthermore, the distribution of misorientation angles within the investigated area (=1 grain) is found to change during the annealing steps. After 3 min of annealing, most of the misorientations around 30°-40° have vanished, and some islands with high misorientation angles remain, which may play a role as antiferromagnetic pinning centers.

  16. Texture mechanisms and microstructure of biaxial thin films grown by oblique angle deposition

    Energy Technology Data Exchange (ETDEWEB)

    Shetty, A.R.; Karimi, A. [Institut de Physique de la Matiere Condensee (IPMC), Ecole Polytechnique Federale de Lausanne (EPFL), Lausanne (Switzerland)

    2012-08-15

    In order to understand the texture formation mechanism in thin films grown under oblique angle deposition (OAD), TiAlN films were deposited at room temperature (RT) under various incident angles. We show that both in-plane and out-of-plane crystallographic orientations respond strongly to the deposition angle. For {alpha} = 0 , the pole figures show a (111) and (200) mixed out-of-plane orientation with random in-plane alignment. In contrast, under OAD, inclined textures are observed with the (111) direction moving toward the incident flux direction and the (200) moving away, showing substantial in-plane alignment. This observation suggests that TiAlN crystals prefer to grow with the (200) direction perpendicular to the substrate while maintaining the minimization of the surface free energy by maximizing the (111) surface area toward the incident flux. The in-plane texture, which is randomly oriented at normal incidence, gives rise to two preferred orientations under oblique angles - one along the direction of flux and other away from the deposition source. The biaxial texture results from a competition among texture mechanism related to surface mobilities of adatoms, geometrical and directional effects. The surface and cross-section of the films were observed by scanning electron microscopy (SEM). OAD films develop a kind of smooth tiles of a roof structure, with no faceted crystallites. The columns of these films were tilted toward the direction of incident flux. The dependence of (111) texture tilt angle and column angle {beta} on the incidence flux angle {alpha} is evaluated using four well-known models. Transmission electron microscopy (TEM) study reveals a voided, intercolumnar structure with oblique growth toward the flux direction. The selected area diffraction pattern (SAED) pattern supports the pole figure observations. Measurements of the nanoindentation test were performed in order to discuss the change of mechanical properties as a function of incident

  17. The characteristics of carbon nanotubes grown at low temperature for electronic device application

    Energy Technology Data Exchange (ETDEWEB)

    Park, Yong Seob [Department of Photoelectronics Information, Chosun College of Science and Technology, Gwangju (Korea, Republic of); Yi, Junsin [School of Information and Communications Engineering, Sungkyunkwan University, Suwon, 440–746 (Korea, Republic of); Lee, Jaehyeong, E-mail: jaehyeong@skku.edu [School of Information and Communications Engineering, Sungkyunkwan University, Suwon, 440–746 (Korea, Republic of)

    2013-11-01

    For the application of carbon nanotubes (CNTs) in flexible electronic devices, the CNTs were grown on Corning 1737 glass substrate by microwave plasma enhanced chemical vapor deposition (MPECVD) method. To deposit the catalyst layer, TiN buffer layer of 200 nm thickness and Ni catalyst layer of 60 nm were first deposited on the glass by r.f. magnetron sputtering method. The CH{sub 4} and H{sub 2} gases are used as the synthesis gas of CNTs and the working pressure was about 2.13 kPa, and the substrate bias was about − 200 V. The growth time was from 2 min to 5 min and the microwave power was about 800 W. The substrate temperature as the main parameter was changed from 400 °C to 550 °C. The structural properties of CNTs synthesized with the substrate temperature were investigated using Raman, field emission scanning electron microscopy, and transmission electron microscopy methods. The surface and electrical properties of CNTs grown by MPECVD method were studied by scanning probe microscopy and four-point probe methods. We obtained the multi-walled CNTs (MW-CNTs). Multi-walled CNTs were vertically grown on Ni/TiN/glass substrates below 500 °C without any glass deformations. As the substrate temperature was increased, the crystallinity of CNTs was improved. Ni catalyst was found at the tip of CNT by the TEM observation and the grown CNTs were found to have a multi-walled with bamboo like structure. - Highlights: • Synthesis of vertically aligned carbon nanotubes. • Effects of substrate temperature on carbon nanotubes properties. • Improvement of the crystallinity with increasing substrate temperature. • Reduction of sheet resistance with increasing substrate temperature.

  18. A comparative study of physico-chemical properties of CBD and SILAR grown ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Jambure, S.B.; Patil, S.J.; Deshpande, A.R.; Lokhande, C.D., E-mail: l_chandrakant@yahoo.com

    2014-01-01

    Graphical abstract: Schematic model indicating ZnO nanorods by CBD (Z{sub 1}) and nanograins by SILAR (Z{sub 2}). - Highlights: • Simple methods for the synthesis of ZnO thin films. • Comparative study of physico-chemical properties of ZnO thin films prepared by CBD and SILAR methods. • CBD outperforms SILAR method. - Abstract: In the present work, nanocrystalline zinc oxide (ZnO) thin films have been successfully deposited onto glass substrates by simple and economical chemical bath deposition (CBD) and successive ionic layer adsorption reaction (SILAR) methods. These films were further characterized for their structural, optical, surface morphological and wettability properties. The X-ray diffraction (XRD) patterns for both CBD and SILAR deposited ZnO thin films reveal the highly crystalline hexagonal wurtzite structure. From optical studies, band gaps obtained are 2.9 and 3.0 eV for CBD and SILAR deposited thin films, respectively. The scanning electron microscope (SEM) patterns show growth of well defined randomly oriented nanorods and nanograins on the CBD and SILAR deposited samples, respectively. The resistivity of CBD deposited films (10{sup 2} Ω cm) is lower than that of SILAR deposited films (10{sup 5} Ω cm). Surface wettability studies show hydrophobic nature for both films. From the above results it can be concluded that CBD grown ZnO thin films show better properties as compared to SILAR method.

  19. Optical properties of aluminum nitride thin films grown by direct-current magnetron sputtering close to epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Stolz, A. [Institut d' Electronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, PRES Lille, Université Nord de France, Avenue Poincaré, 59652 Villeneuve d' Ascq Cedex (France); Soltani, A., E-mail: ali.soltani@iemn.univ-lille1.fr [Institut d' Electronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, PRES Lille, Université Nord de France, Avenue Poincaré, 59652 Villeneuve d' Ascq Cedex (France); Abdallah, B. [Department of Materials Physics, Atomic Energy Commission of Syria, Damascus, P.O. Box 6091 (Syrian Arab Republic); Charrier, J. [Fonctions Optiques pour les Technologies de l' informatiON (FOTON), UMR CNRS 6082, 6, rue de Kerampont CS 80518, 22305 Lannion Cedex (France); Deresmes, D. [Institut d' Electronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, PRES Lille, Université Nord de France, Avenue Poincaré, 59652 Villeneuve d' Ascq Cedex (France); Jouan, P.-Y.; Djouadi, M.A. [Institut des Matériaux Jean Rouxel – IMN, UMR CNRS 6502, 2, rue de la Houssinère BP 32229, 44322 Nantes (France); Dogheche, E.; De Jaeger, J.-C. [Institut d' Electronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, PRES Lille, Université Nord de France, Avenue Poincaré, 59652 Villeneuve d' Ascq Cedex (France)

    2013-05-01

    Low-temperature Aluminum Nitride (AlN) thin films with a thickness of 3 μm were deposited by Direct-Current magnetron sputtering on sapphire substrate. They present optical properties similar to those of epitaxially grown films. Different characterization methods such as X-Ray Diffraction, Transmission Electron Microscopy and Atomic Force Microscopy were used to determine the structural properties of the films such as its roughness and crystallinity. Newton interferometer was used for stress measurement of the films. Non-destructive prism-coupling technique was used to determine refractive index and thickness homogeneity by a mapping on the whole sample area. Results show that AlN films grown on AlGaN layer have a high crystallinity close to epitaxial films, associated to a low intrinsic stress for low thickness. These results highlight that it is possible to grow thick sample with microstructure and optical properties close to epitaxy, even on a large surface. - Highlights: ► Aluminum Nitride sputtering technique with a low temperature growth process ► Epitaxial quality of two microns sputtered Aluminum Nitride film ► Optics as a non-destructive accurate tool for acoustic wave investigation.

  20. Morphology and Optical Properties of Zinc Oxide Films Grown on Metal Coated Glass Substrates by Aqueous Chemical Growth

    Science.gov (United States)

    Bakar, M. A.; Hamid, M. A. A.; Jalar, A.; Shamsudin, R.

    2013-04-01

    Zinc oxide films were deposited on three different metal coated substrates (gold, nickel and platinum) by aqueous chemical growth method. This paper discusses the effect of metal coated substrates on the morphology and optical properties of grown ZnO films. X-Ray Diffraction (XRD), Field Emission Scanning Electron Microscopy (FE-SEM) and UV-visible spectroscopy (UV-vis) were employed to characterize the samples. All the as-deposited ZnO films exhibit crystalline hexagonal wurzite structure. The crystallite size of the ZnO films were in the range of 29 to 32 nm. FESEM micrographs revealed hexagonal rod, oval-like and flower-like ZnO structures formed on all metal coated substrates. The Pt coated film contains higher density hexagonal rod as compared to others metal coated substrate. Most probably the Pt lattice parameter is the nearest to ZnO compared to nickel and gold. The optical band gap energy, Eg of ZnO films were estimated to be 3.30 eV which is near to bulk Eg, 3.37 eV. This indicates that the ZnO grown by aqueous chemical growth is able to produce similar quality properties to other conventional method either films or bulk size.

  1. Thermal conductivity of low temperature grown vertical carbon nanotube bundles measured using the three-ω method

    NARCIS (Netherlands)

    Vollebregt, S.; Banerjee, S.; Beenakker, K.; Ishihara, R.

    2013-01-01

    The thermal conductivity of as-grown vertical multi-walled carbon nanotubes (CNT) bundles fabricated at low temperature (500 °C) was measured using a vertical 3ω-method. For this, CNT were selectively grown inside an oxide opening and sandwiched between two metal electrodes. The validity of the meth

  2. Graphene diamond-like carbon films heterostructure

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Fang; Afandi, Abdulkareem; Jackman, Richard B., E-mail: r.jackman@ucl.ac.uk [London Centre for Nanotechnology, Electronic and Electrical Engineering Department, University College London, 17-19 Gordon Street, London WC1H 0AH (United Kingdom)

    2015-03-09

    A limitation to the potential use of graphene as an electronic material is the lack of control over the 2D materials properties once it is deposited on a supporting substrate. Here, the use of Diamond-like Carbon (DLC) interlayers between the substrate and the graphene is shown to offer the prospect of overcoming this problem. The DLC films used here, more properly known as a-C:H with ∼25% hydrogen content, have been terminated with N or F moieties prior to graphene deposition. It is found that nitrogen terminations lead to an optical band gap shrinkage in the DLC, whilst fluorine groups reduce the DLC's surface energy. CVD monolayer graphene subsequently transferred to DLC, N terminated DLC, and F terminated DLC has then been studied with AFM, Raman and XPS analysis, and correlated with Hall effect measurements that give an insight into the heterostructures electrical properties. The results show that different terminations strongly affect the electronic properties of the graphene heterostructures. G-F-DLC samples were p-type and displayed considerably higher mobility than the other heterostructures, whilst G-N-DLC samples supported higher carrier densities, being almost metallic in character. Since it would be possible to locally pattern the distribution of these differing surface terminations, this work offers the prospect for 2D lateral control of the electronic properties of graphene layers for device applications.

  3. Graphene diamond-like carbon films heterostructure

    Science.gov (United States)

    Zhao, Fang; Afandi, Abdulkareem; Jackman, Richard B.

    2015-03-01

    A limitation to the potential use of graphene as an electronic material is the lack of control over the 2D materials properties once it is deposited on a supporting substrate. Here, the use of Diamond-like Carbon (DLC) interlayers between the substrate and the graphene is shown to offer the prospect of overcoming this problem. The DLC films used here, more properly known as a-C:H with ˜25% hydrogen content, have been terminated with N or F moieties prior to graphene deposition. It is found that nitrogen terminations lead to an optical band gap shrinkage in the DLC, whilst fluorine groups reduce the DLC's surface energy. CVD monolayer graphene subsequently transferred to DLC, N terminated DLC, and F terminated DLC has then been studied with AFM, Raman and XPS analysis, and correlated with Hall effect measurements that give an insight into the heterostructures electrical properties. The results show that different terminations strongly affect the electronic properties of the graphene heterostructures. G-F-DLC samples were p-type and displayed considerably higher mobility than the other heterostructures, whilst G-N-DLC samples supported higher carrier densities, being almost metallic in character. Since it would be possible to locally pattern the distribution of these differing surface terminations, this work offers the prospect for 2D lateral control of the electronic properties of graphene layers for device applications.

  4. Wettability of Nafion and Nafion/Vulcan carbon composite films.

    Science.gov (United States)

    Li, Xiaoan; Feng, Fangxia; Zhang, Ke; Ye, Siyu; Kwok, Daniel Y; Birss, Viola

    2012-04-24

    The wettability of the Pt/carbon/Nafion catalyst layer in proton exchange membrane fuel cells is critical to their performance and durability, especially the cathode, as water is needed for the transport of protons to the active sites and is also involved in deleterious Pt nanoparticle dissolution and carbon corrosion. Therefore, the focus of this work has been on the first-time use of the water droplet impacting method to determine the wettability of 100% Nafion films, as a benchmark, and then of Vulcan carbon (VC)/Nafion composite films, both deposited by spin-coating in the Pt-free state. Pure Nafion films, shown by SEM analysis to have a nanochanneled structure, are initially hydrophobic but become hydrophilic as the water droplet spreads, likely due to reorientation of the sulfonic acid groups toward water. The wettability of VC/Nafion composite films depends significantly on the VC/Nafion mass ratios, even though Nafion is believed to be preferentially oriented (sulfonate groups toward VC) in all cases. At low VC contents, a significant water droplet contact angle hysteresis is seen, similar to pure Nafion films, while at higher VC contents (>30%), the films become hydrophobic, also exhibiting superhydrophobicity, with surface roughness playing a significant role. At >80% VC, the surfaces become wettable again as there is insufficient Nafion loading present to fully cover the carbon surface, allowing the calculation of the Nafion:carbon ratio required for a full coverage of carbon by Nafion.

  5. Effect of high substrate bias and hydrogen and nitrogen incorporation on filtered cathodic vacuum arc deposited tetrahedral amorphous carbon films

    Energy Technology Data Exchange (ETDEWEB)

    Panwar, O.S. [Plasma Processed Materials Group, National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi-110 012 (India)], E-mail: ospanwar@mail.nplindia.ernet.in; Khan, Mohd. Alim [Plasma Processed Materials Group, National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi-110 012 (India); Kumar, Mahesh; Shivaprasad, S.M. [Surface Physics and Nanostructures Group, National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi-110 012 (India); Satyanarayana, B.S. [MIT Innovation Centre and Electronics and Communication Department, Manipal Institute of Technology, Manipal-579104 (India); Dixit, P.N. [Plasma Processed Materials Group, National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi-110 012 (India); Bhattacharyya, R. [Emeritus Scientist, National Physical Laboratory, New Delhi-110012 (India); Khan, M.Y. [Department of Physics, Jamia Millia Islamia, Central University, New Delhi-110025 (India)

    2008-02-29

    The application of a sufficiently high negative substrate bias, during the growth of tetrahedral amorphous carbon (ta-C), is usually associated with low sp{sup 3} bonding configuration and stressed films. However, in an effort to understand and utilize the higher pseudo thermo dynamical conditions during the film growth, at high negative substrate bias (- 300 V), reported here is a study on ta-C films grown under different hydrogen and nitrogen concentration. As grown ta-C films were studied under different negative substrate bias conditions. The variation of the sp{sup 3} content and sp{sup 3}/sp{sup 2} ratio in the ta-C films exhibits a trend similar to those reported in literature, with a subtle variation in this report being the substrate bias voltage, which was observed to be around - 200 V, for obtaining the highest sp{sup 3} (80%) bonding and sp{sup 3}/sp{sup 2} (3.95) ratio. The hydrogen and nitrogen incorporated ta-C films studied, at a bias of - 300 V, show an increase in sp{sup 3} (87-91%) bonding and sp{sup 3}/sp{sup 2} (7-10) ratio in the range of studies reported. The inference is drawn on the basis of the set of data obtained from measurements carried out using X-ray photoelectron spectroscopy, X-ray induced Auger electron spectroscopy and Raman spectroscopy of as grown and hydrogen and nitrogen incorporated ta-C films deposited using an S bend filtered cathodic vacuum arc system. The study indicates the possibility of further tailoring ta-C film properties and also extending capabilities of the cathodic arc system for developing carbon based films for electronics and tribological applications.

  6. UV/vis range photodetectors based on thin film ALD grown ZnO/Si heterojunction diodes

    Science.gov (United States)

    Alkis, Sabri; Tekcan, Burak; Nayfeh, Ammar; Kemal Okyay, Ali

    2013-10-01

    We present ultraviolet-visible (UV/vis) range photodetectors (PDs) based on thin film ZnO (n)/Si (p) heterojunction diodes. ZnO films are grown by the atomic layer deposition (ALD) technique at growth temperatures of 80, 150, 200 and 250 ° C. The fabricated ZnO (n)/Si (p) photodetectors (ZnO-Si-PDs) show good electrical rectification characteristics with ON/OFF ratios reaching up to 103. Under UV (350 nm wavelength) and visible (475 nm wavelength) light illumination, the ZnO-Si-PDs give photoresponsivity values of 30-37 mA W-1 and 74-80 mA W-1 at 0.5 V reverse bias, respectively. Photoluminescence (PL) spectra of ALD grown ZnO thin films are used to support the results.

  7. N-doped ZnO films grown from hybrid target by the pulsed laser deposition technique

    Science.gov (United States)

    Martín-Tovar, E. A.; Chan y Díaz, E.; Acosta, M.; Castro-Rodríguez, R.; Iribarren, A.

    2016-10-01

    ZnO thin films were grown by the pulsed laser deposition technique on glass substrate using a hybrid target composed of ZnO powder embedded into a poly(ethyl cyanoacrylate) matrix. The resulting thin film presented ZnO wurtzite structure with very low stress and diffractogram very similar to that of the powder pattern. From comparing with ZnO thin films grown from traditional sintered target, it is suggested that the use of this hybrid target with a soft matrix led to ejection of ZnO clusters that conveniently disposed and adhered to substrate and previous deposited layers. Chemical measurements showed the presence of Zn-N bonds, besides Zn-O ones. Optical absorption profile confirmed the presence of low-polymerized zinc oxynitride molecular subunits, besides ZnO.

  8. Co3O4(100) films grown on Ag(100): Structure and chemical properties

    Science.gov (United States)

    Arman, Mohammad A.; Merte, Lindsay R.; Lundgren, Edvin; Knudsen, Jan

    2017-03-01

    Spinel type Co3O4(100) is successfully grown on Ag(100) at ultrahigh vacuum conditions and its structure, electronic and chemical properties are compared with those of Co3O4(111) grown on Ir(100). We find that the Co3O4(100) is unreconstructed. In contrast to the defect free Co3O4(111) surface the Co3O4(100) surface contains a high concentration of defects that we assign to subsurface cation vacancies analogous to those observed for Fe3O4(100). Our photoemission and absorption spectroscopy experiments reveal a very similar electronic structure of the Co3O4(111) and Co3O4(100) surfaces. The similar electronic structure of the two surfaces is reflected in the CO adsorption properties at low temperatures, as we observe adsorption of molecular CO as well as the formation of carbonate (CO3) species on both surfaces upon CO exposure at 85 K.

  9. Formation of Ultrananocrystalline Diamond/Amorphous Carbon Composite Films in Vacuum Using Coaxial Arc Plasma Gun

    Science.gov (United States)

    Hanada, Kenji; Yoshida, Tomohiro; Nakagawa, You; Yoshitake, Tsuyoshi

    2010-12-01

    Ultrananocrystalline diamond (UNCD)/nonhydrogenated amorphous carbon (a-C) composite films were grown in vacuum using a coaxial arc plasma gun. From the X-ray diffraction measurement, the UNCD crystallite size was estimated to be 1.6 nm. This size is dramatically reduced from that (2.3 nm) of UNCD/hydrogenated amorphous carbon (a-C:H) composite films grown in a hydrogen atmosphere. The sp3/(sp3 + sp2) value, which was estimated from the X-ray photoemission spectrum, was also reduced to be 41%. A reason for it might be the reduction in the UNCD crystallite size. From the near-edge X-ray absorption fine-structure (NEXAFS) spectrum, it was found that the π*C=C and π*C≡C bonds are preferentially formed instead of the σ*C-H bonds in the UNCD/a-C:H films. Since the extremely small UNCD crystallites (1.6 nm) correspond to the nuclei of diamond, we consider that UNCD crystallite formation should be due predominantly to nucleation. The supersaturated condition required for nucleation is expected to be realized in the deposition using the coaxial arc plasma gun.

  10. Nanomechanical properties of SiC films grown from C{sub 60} precursors using atomic force microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Morse, K. [Colorado School of Mines, Golden, CO (United States); Balooch, M.; Hamza, A.V.; Belak, J. [Lawrence Livermore National Lab., CA (United States)

    1994-12-01

    The mechanical properties of SiC films grown via C{sub 60} precursors were determined using atomic force microscopy (AFM). Conventional silicon nitride and modified diamond cantilever AFM tips were employed to determine the film hardness, friction coefficient, and elastic modulus. The hardness is found to be between 26 and 40 GPa by nanoindentation of the film with the diamond tip. The friction coefficient for the silicon nitride tip on the SiC film is about one third that for silicon nitride sliding on a silicon substrate. By combining nanoindentation and AFM measurements an elastic modulus of {approximately}300 GPa is estimated for these SiC films. In order to better understand the atomic scale mechanisms that determine the hardness and friction of SiC, we simulated the molecular dynamics of a diamond indenting a crystalline SiC substrate.

  11. Structural properties of SrO thin films grown by molecular beam epitaxy on LaAlO3 substrates

    Science.gov (United States)

    Maksimov, O.; Heydemann, V. D.; Fisher, P.; Skowronski, M.; Salvador, P. A.

    2006-12-01

    SrO films were grown on LaAlO3 substrates by molecular beam epitaxy and characterized using reflection high-energy electron diffraction (RHEED) and x-ray diffraction (XRD). The evolution of the RHEED pattern is discussed as a function of film thickness. 500Å thick SrO films were relaxed and exhibited RHEED patterns indicative of an atomically smooth surface having uniform terrace heights. Films had the epitaxial relationship (001)SrO‖(001)LaAlO3; [010]SrO‖[110]LaAlO3. This 45° in-plane rotation minimizes mismatch and leads to films of high crystalline quality, as verified by Kikuchi lines in the RHEED patterns and narrow rocking curves of the (002) XRD peak.

  12. LiCoO{sub 2} thin films grown by pulsed laser deposition on low cost substrates

    Energy Technology Data Exchange (ETDEWEB)

    Ginley, D.S.; Perkins, J.D.; McGraw, J.M.; Parilla, P.A.

    1998-07-01

    The authors report on the use of pulsed laser deposition (PLD) to grow thin films of LiCoO{sub 2} on a number of low cost substrates including SnO{sub 2} coated Upilex, stainless steel and SnO{sub 2} coated glass. Highly textured (001) films grown on CVD deposited SnO{sub 2} films on 7059 glass, were obtained at 200 to 500 mTorr O{sub 2} and a temperature of 500 C. Similar texture was not obtained on the stainless or Upilex however dense films from crystalline to amorphous were obtained. The films were characterized by x-ray diffraction and Raman spectroscopy.

  13. [FTIR spectroscopic studies of inner stress on boron carbon nitride thin films].

    Science.gov (United States)

    Wang, Yu-Xin; Zheng, Ya-Ru; Song, Zhe; Feng, Ke-Cheng; Zhao, Yong-Nian

    2008-07-01

    Boron carbon nitride thin films were deposited by radio frequency (RF) magnetron sputtering technique using a 50 mm-diameter composite target consisting of h-BN and graphite in an Ar-N2 gas mixture. The composite target was composed of two semi disks: one of h-BN and the other one of graphite. The distance between the target and the substrate was kept at 50 mm. The chamber base pressure was below 5 x 10(-4) Pa. During the deposition, the mixture of Ar (80%) and N2 (20%) was injected into the vacuum chamber and the total pressure was 1.3 Pa. The films were grown on silicon substrates at different deposition parameters, including sputtering power of 80-130 W, deposition temperature of 300-500 degrees C and deposition time of 1-4 h. The chemical bonding state of the samples was characterized by Fourier transform infrared absorption spectroscopy (FTIR). The results suggested that all of the films deposited at these deposition parameters are atomic-level hybrids composed of B, C and N atoms. Besides BN and carbons bonds, the boron carbide and carbon nitride bonds were formed in the BCN thin films. And the deposition parameters have important influences on the growth and inner stress of BCN thin films. That is the higher the sputtering power, the larger the inner stress; the higher or lower the deposition temperature, the larger the inner stress; the longer the deposition time, the larger the inner stress. So changing deposition parameters properly is a feasible method to relax the inner stress between the films and substrate. In the conditions of changing one parameter each time, the optimum deposition parameters to prepare BCN thin films with lower inner stress were obtained: sputtering power of 80 W, deposition temperature of 400 degrees C and deposition time of 2 h.

  14. Aligned carbon nanotubes catalytically grown on iron-based nanoparticles obtained by laser-induced CVD

    Energy Technology Data Exchange (ETDEWEB)

    Le Normand, F. [Groupe Surfaces and Interfaces, IPCMS, UMR 7504 CNRS, Bat 70, 23 rue du Loess, 67034 Strasbourg Cedex (France)], E-mail: Francois.Le-Normand@ipcms.u-strasbg.fr; Cojocaru, C.S.; Ersen, O. [Groupe Surfaces and Interfaces, IPCMS, UMR 7504 CNRS, Bat 70, 23 rue du Loess, 67034 Strasbourg Cedex (France); Legagneux, P.; Gangloff, L. [THALES R and T, Departementale 128, 91747 Palaiseau Cedex (France); Fleaca, C. [Groupe Surfaces and Interfaces, IPCMS, UMR 7504 CNRS, Bat 70, 23 rue du Loess, 67034 Strasbourg Cedex (France); National Institute for Lasers, Plasma and Radiation Physics, Laser Department, P.O. Box MG-36, R-76900 Bucharest (Romania); Alexandrescu, R.; Dumitrache, F.; Morjan, I. [National Institute for Lasers, Plasma and Radiation Physics, Laser Department, P.O. Box MG-36, R-76900 Bucharest (Romania)

    2007-12-15

    Iron-based nanoparticles are prepared by a laser-induced chemical vapor deposition (CVD) process. They are characterized as body-centered Fe and Fe{sub 2}O{sub 3} (maghemite/magnetite) particles with sizes {<=}5 and 10 nm, respectively. The Fe particles are embedded in a protective carbon matrix. Both kind of particles are dispersed by spin-coating on SiO{sub 2}/Si(1 0 0) flat substrates. They are used as catalyst to grow carbon nanotubes by a plasma- and filaments-assisted catalytic CVD process (PE-HF-CCVD). Vertically oriented and thin carbon nanotubes (CNTs) were grown with few differences between the two samples, except the diameter in relation to the initial size of the iron particles, and the density. The electron field emission of these samples exhibit quite interesting behavior with a low turn-on voltage at around 1 V/{mu}m.

  15. Aligned carbon nanotubes catalytically grown on iron-based nanoparticles obtained by laser-induced CVD

    Science.gov (United States)

    Le Normand, F.; Cojocaru, C. S.; Ersen, O.; Legagneux, P.; Gangloff, L.; Fleaca, C.; Alexandrescu, R.; Dumitrache, F.; Morjan, I.

    2007-12-01

    Iron-based nanoparticles are prepared by a laser-induced chemical vapor deposition (CVD) process. They are characterized as body-centered Fe and Fe 2O 3 (maghemite/magnetite) particles with sizes ≤5 and 10 nm, respectively. The Fe particles are embedded in a protective carbon matrix. Both kind of particles are dispersed by spin-coating on SiO 2/Si(1 0 0) flat substrates. They are used as catalyst to grow carbon nanotubes by a plasma- and filaments-assisted catalytic CVD process (PE-HF-CCVD). Vertically oriented and thin carbon nanotubes (CNTs) were grown with few differences between the two samples, except the diameter in relation to the initial size of the iron particles, and the density. The electron field emission of these samples exhibit quite interesting behavior with a low turn-on voltage at around 1 V/μm.

  16. Properties of electrophoretically deposited single wall carbon nanotube films

    Energy Technology Data Exchange (ETDEWEB)

    Lim, Junyoung; Jalali, Maryam; Campbell, Stephen A., E-mail: campb001@umn.edu

    2015-08-31

    This paper describes techniques for rapidly producing a carbon nanotube thin film by electrophoretic deposition at room temperature and determines the film mass density and electrical/mechanical properties of such films. The mechanism of electrophoretic deposition of thin layers is explained with experimental data. Also, film thickness is measured as a function of time, electrical field and suspension concentration. We use Rutherford backscattering spectroscopy to determine the film mass density. Films created in this manner have a resistivity of 2.14 × 10{sup −3} Ω·cm, a mass density that varies with thickness from 0.12 to 0.54 g/cm{sup 3}, and a Young's modulus between 4.72 and 5.67 GPa. The latter was found to be independent of thickness from 77 to 134 nm. We also report on fabricating free-standing films by removing the metal seed layer under the CNT film, and selectively etching a sacrificial layer. This method could be extended to flexible photovoltaic devices or high frequency RF MEMS devices. - Highlights: • We explain the electrophoretic deposition process and mechanism of thin SWCNT film deposition. • Characterization of the SWCNT film properties including density, resistivity, transmittance, and Young's modulus. • The film density and resistivity are found to be a function of the film thickness. • Techniques developed to create free standing layers of SW-CNTs for flexible electronics and mechanical actuators.

  17. Angular magnetoresistance in semiconducting undoped amorphous carbon thin films

    Energy Technology Data Exchange (ETDEWEB)

    Sagar, Rizwan Ur Rehman; Saleemi, Awais Siddique; Zhang, Xiaozhong, E-mail: xzzhang@tsinghua.edu.cn [Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, People' s Republic of China and Beijing National Center for Electron Microscopy, Beijing 100084 (China)

    2015-05-07

    Thin films of undoped amorphous carbon thin film were fabricated by using Chemical Vapor Deposition and their structure was investigated by using High Resolution Transmission Electron Microscopy and Raman Spectroscopy. Angular magnetoresistance (MR) has been observed for the first time in these undoped amorphous carbon thin films in temperature range of 2 ∼ 40 K. The maximum magnitude of angular MR was in the range of 9.5% ∼ 1.5% in 2 ∼ 40 K. The origin of this angular MR was also discussed.

  18. Flexible supercapacitor electrodes with vertically aligned carbon nanotubes grown on aluminum foils

    Directory of Open Access Journals (Sweden)

    Itir Bakis Dogru

    2016-06-01

    Full Text Available In this work, vertically aligned carbon nanotubes (VACNTs grown on aluminum foils were used as flexible supercapacitor electrodes. Aluminum foils were used as readily available, cheap and conductive substrates, and VACNTs were grown directly on these foils through chemical vapor deposition (CVD method. Solution based ultrasonic spray pyrolysis (USP method was used for the deposition of the CNT catalyst. Direct growth of VACNTs on aluminum foils ruled out both the internal resistance of the supercapacitor electrodes and the charge transfer resistance between the electrode and electrolyte. A specific capacitance of 2.61 mF/cm2 at a scan rate of 800 mV/s was obtained from the fabricated electrodes, which is further improved through the bending cycles.

  19. Electrochemical properties of seamless three-dimensional carbon nanotubes-grown graphene modified with horseradish peroxidase.

    Science.gov (United States)

    Komori, Kikuo; Terse-Thakoor, Trupti; Mulchandani, Ashok

    2016-10-01

    Horseradish peroxidase (HRP) was immobilized through sodium dodecyl sulfate (SDS) on the surface of a seamless three-dimensional hybrid of carbon nanotubes grown at the graphene surface (HRP-SDS/CNTs/G) and its electrochemical properties were investigated. Compared with graphene alone electrode modified with HRP via SDS (HRP-SDS/G electrode), the surface coverage of electroactive HRP at the CNTs/G electrode surface was approximately 2-fold greater because of CNTs grown at the graphene surface. Based on the increase in the surface coverage of electroactive HRP, the sensitivity to H2O2 at the HRP-SDS/CNTs/G electrode was higher than that at the HRP-SDS/G electrode. The kinetics of the direct electron transfer from the CNTs/G electrode to compound I and II of modified HRP was also analyzed.

  20. Epitaxially grown polycrystalline silicon thin-film solar cells on solid-phase crystallised seed layers

    Energy Technology Data Exchange (ETDEWEB)

    Li, Wei, E-mail: weili.unsw@gmail.com; Varlamov, Sergey; Xue, Chaowei

    2014-09-30

    Highlights: • Crystallisation kinetic is used to analyse seed layer surface cleanliness. • Simplified RCA cleaning for the seed layer can shorten the epitaxy annealing duration. • RTA for the seed layer can improve the quality for both seed layer and epi-layer. • Epitaxial poly-Si solar cell performance is improved by RTA treated seed layer. - Abstract: This paper presents the fabrication of poly-Si thin film solar cells on glass substrates using seed layer approach. The solid-phase crystallised P-doped seed layer is not only used as the crystalline template for the epitaxial growth but also as the emitter for the solar cell structure. This paper investigates two important factors, surface cleaning and intragrain defects elimination for the seed layer, which can greatly influence the epitaxial grown solar cell performance. Shorter incubation and crystallisation time is observed using a simplified RCA cleaning than the other two wet chemical cleaning methods, indicating a cleaner seed layer surface is achieved. Cross sectional transmission microscope images confirm a crystallographic transferal of information from the simplified RCA cleaned seed layer into the epi-layer. RTA for the SPC seed layer can effectively eliminate the intragrain defects in the seed layer and improve structural quality of both of the seed layer and the epi-layer. Consequently, epitaxial grown poly-Si solar cell on the RTA treated seed layer shows better solar cell efficiency, V{sub oc} and J{sub sc} than the one on the seed layer without RTA treatment.

  1. ALD grown nanostructured ZnO thin films: Effect of substrate temperature on thickness and energy band gap

    Directory of Open Access Journals (Sweden)

    Javed Iqbal

    2016-10-01

    Full Text Available Nanostructured ZnO thin films with high transparency have been grown on glass substrate by atomic layer deposition at various temperatures ranging from 100 °C to 300 °C. Efforts have been made to observe the effect of substrate temperature on the thickness of the deposited thin films and its consequences on the energy band gap. A remarkably high growth rate of 0.56 nm per cycle at a substrate temperature of 200 °C for ZnO thin films have been achieved. This is the maximum growth rate for ALD deposited ZnO thin films ever reported so far to the best of our knowledge. The studies of field emission scanning electron microscopy and X-ray diffractometry patterns confirm the deposition of uniform and high quality nanosturtured ZnO thin films which have a polycrystalline nature with preferential orientation along (100 plane. The thickness of the films deposited at different substrate temperatures was measured by ellipsometry and surface profiling system while the UV–visible and photoluminescence spectroscopy studies have been used to evaluate the optical properties of the respective thin films. It has been observed that the thickness of the thin film depends on the substrate temperatures which ultimately affect the optical and structural parameters of the thin films.

  2. Raman spectra of amorphous carbon films deposited by SWP

    Science.gov (United States)

    Xu, Junqi; Liu, Weiguo; Hang, Lingxia; Su, Junhong; Fan, Huiqing

    2010-10-01

    Amorphous carbon film is one of the most important anti-reflection protective films coated on infrared optical components. In this paper, hydrogen-free amorphous carbon films were deposited by new type surface-wave-sustained plasma (SWP) source with a graphite target at various experiment parameters. The laser Raman spectroscopy at wavelength of 514 nm was used to investigate the structure and bonding of these carbon films. The results showed consanguineous correlations between the intensity ratio ID/IG and the experiment parameters such as microwave power, target voltage and gas pressure applied to the SWP source. Raman spectra proved the structure of these carbon films prepared by SWP technique is typical diamond-like carbon (DLC). The analysis on G peak position and intensity ratio ID/IG indicated that Raman shifts moves to low wavenumber and ID/IG decreases with the increasing of microwave power from 150 W to 330 W. These results means the formation of sp3 bond prefers higher microwave power. DLC films prepared at target voltage of -200 V have higher sp3 content than that of -350 V, moreover, an increase of gas pressure during experiments yields higher sp3 content at the microwave power below 270 W, whereas the change of sp3 content is slight with the various conditions when microwave power exceeds 270 W.

  3. Green emission in carbon doped ZnO films

    Directory of Open Access Journals (Sweden)

    L. T. Tseng

    2014-06-01

    Full Text Available The emission behavior of C-doped ZnO films, which were prepared by implantation of carbon into ZnO films, is investigated. Orange/red emission is observed for the films with the thickness of 60–100 nm. However, the film with thickness of 200 nm shows strong green emission. Further investigations by annealing bulk ZnO single crystals under different environments, i.e. Ar, Zn or C vapor, indicated that the complex defects based on Zn interstitials are responsible for the strong green emission. The existence of complex defects was confirmed by electron spin resonance (ESR and low temperature photoluminescence (PL measurement.

  4. Green emission in carbon doped ZnO films

    Energy Technology Data Exchange (ETDEWEB)

    Tseng, L. T.; Yi, J. B., E-mail: jiabao.yi@unsw.edu.au; Zhang, X. Y.; Xing, G. Z.; Luo, X.; Li, S. [School of Materials Science and Engineering, University of New South Wales, Kensington, NSW, 2052 (Australia); Fan, H. M. [School of Chemical Engineering, Northwest University, Xi' an 710069 (China); Herng, T. S.; Ding, J. [Department of Materials Science and Engineering, National University of Singapore, 119260 (Singapore); Ionescu, M. [Australian Nuclear Science and Technology Organization, (ANSTO), New Illawarra Road, Lucas Heights, NSW 2234 (Australia)

    2014-06-15

    The emission behavior of C-doped ZnO films, which were prepared by implantation of carbon into ZnO films, is investigated. Orange/red emission is observed for the films with the thickness of 60–100 nm. However, the film with thickness of 200 nm shows strong green emission. Further investigations by annealing bulk ZnO single crystals under different environments, i.e. Ar, Zn or C vapor, indicated that the complex defects based on Zn interstitials are responsible for the strong green emission. The existence of complex defects was confirmed by electron spin resonance (ESR) and low temperature photoluminescence (PL) measurement.

  5. Investigation of bonded hydrogen defects in nanocrystalline diamond films grown with nitrogen/methane/hydrogen plasma at high power conditions

    Science.gov (United States)

    Tang, C. J.; Hou, Haihong; Fernandes, A. J. S.; Jiang, X. F.; Pinto, J. L.; Ye, H.

    2017-02-01

    In this work, we investigate the influence of some growth parameters such as high microwave power ranging from 3.0 to 4.0 kW and N2 additive on the incorporation of bonded hydrogen defects in nanocrystalline diamond (NCD) films grown through a small amount of pure N2 addition into conventional 4% CH4/H2 plasma using a 5 kW microwave plasma CVD system. Incorporation form and content of hydrogen point defects in the NCD films produced with pure N2 addition was analyzed by employing Fourier-transform infrared (FTIR) spectroscopy for the first time. A large amount of hydrogen related defects was detected in all the produced NCD films with N2 additive ranging from 29 to 87 μm thick with grain size from 47 nm to 31 nm. Furthermore, a specific new H related sharp absorption peak appears in all the NCD films grown with pure N2/CH4/H2 plasma at high powers and becomes stronger at powers higher than 3.0 kW and is even stronger than the 2920 cm-1 peak, which is commonly found in CVD diamond films. Based on these experimental findings, the role of high power and pure nitrogen addition on the growth of NCD films including hydrogen defect formation is analyzed and discussed.

  6. Annealing Effect on the Structural and Optical Properties of Sputter-Grown Bismuth Titanium Oxide Thin Films

    Directory of Open Access Journals (Sweden)

    José E. Alfonso

    2014-04-01

    Full Text Available The aim of this work is to assess the evolution of the structural and optical properties of BixTiyOz films grown by rf magnetron sputtering upon post-deposition annealing treatments in order to obtain good quality films with large grain size, low defect density and high refractive index similar to that of single crystals. Films with thickness in the range of 220–250 nm have been successfully grown. After annealing treatment at 600 °C the films show excellent transparency and full crystallization. It is shown that to achieve larger crystallite sizes, up to 17 nm, it is better to carry the annealing under dry air than under oxygen atmosphere, probably because the nucleation rate is reduced. The refractive index of the films is similar under both atmospheres and it is very high (n =2.5 at 589 nm. However it is still slightly lower than that of the single crystal value due to the polycrystalline morphology of the thin films.

  7. Modification of the Properties of Carbon Films for Photovoltaic Converters

    Directory of Open Access Journals (Sweden)

    S.O. Rudchenko

    2012-12-01

    Full Text Available The semiconductor materials with values of energy band gap in the range of 1-2 eV are the most suitable for manufacturing solar cells. These objects include some of the carbon allotropic modifications, as well as quantum dots on the surface of these materials, which use as the basis for the creation of new optoelectronic devices based on nanostructures. This paper presents the investigations of optical properties and structure of synthesized multilayer system diamond-like carbon film/ carbon quantum dots/C60film (DLC/Qdots/C60.

  8. Increasing mouse embryonic fibroblast cells adhesion on superhydrophilic vertically aligned carbon nanotube films

    Energy Technology Data Exchange (ETDEWEB)

    Lobo, A.O., E-mail: loboao@yahoo.com [Laboratory of Biomedical Nanotechnology (NanoBio), Instituto de Pesquisa e Desenvolvimento (IP and D), Universidade do Vale do Paraiba UniVap, Avenida Shishima Hifumi 2911, Sao Jose dos Campos, 12244-000, SP (Brazil) and Laboratory of Biomedical Vibrational Spectroscopy (LEVB), Instituto de Pesquisa e Desenvolvimento (IP and D), Universidade do Vale do Paraiba UniVap, Avenida Shishima Hifumi 2911, Sao Jose dos Campos, 12244-000, SP (Brazil); Marciano, F.R. [Laboratory of Biomedical Nanotechnology (NanoBio), Instituto de Pesquisa e Desenvolvimento (IP and D), Universidade do Vale do Paraiba UniVap, Avenida Shishima Hifumi 2911, Sao Jose dos Campos, 12244-000, SP (Brazil); Laboratory of Biomedical Vibrational Spectroscopy LEVB, Instituto de Pesquisa e Desenvolvimento (IP and D), Universidade do Vale do Paraiba (UniVap), Avenida Shishima Hifumi 2911, Sao Jose dos Campos, 12244-000, SP (Brazil); Ramos, S.C. [Laboratorio Associado de Sensores e Materiais (LAS), Instituto Nacional de Pesquisas Espaciais (INPE), Avenida dos Astronautas 1758, Sao Jose dos Campos, 12.245-970, SP (Brazil); Machado, M.M. [Centro Multidisciplinar para Investigacao Biologica na Area da Ciencia em Animais de Laboratorio (CEMIB), Universidade Estadual de Campinas (UNICAMP), Rua 05 de Junho s/no, Cidade Universitaria ' Zeferino Vaz' , 13083-877, Campinas (Brazil); Corat, E.J. [Laboratorio Associado de Sensores e Materiais (LAS), Instituto Nacional de Pesquisas Espaciais (INPE), Avenida dos Astronautas 1758, Sao Jose dos Campos, 12.245-970, SP (Brazil); Corat, M.A.F. [Centro Multidisciplinar para Investigacao Biologica na Area da Ciencia em Animais de Laboratorio (CEMIB), Universidade Estadual de Campinas (UNICAMP), Rua 05 de Junho s/no, Cidade Universitaria ' Zeferino Vaz' , 13083-877, Campinas (Brazil)

    2011-10-10

    We have analyzed the adhesion of mouse embryonic fibroblasts (MEFs) genetically modified by green fluorescence protein (GFP) gene cultured on vertically-aligned carbon nanotubes (VACNTs) after 6 days. The VACNTs films grown on Ti were obtained by microwave plasma chemical vapor deposition process using Fe catalyst and submitted to an oxygen plasma treatment, for 2 min, at 400 V and 80 mTorr, to convert them to superhydrophilic. Cellular adhesion and morphology were analyzed by scanning electron, fluorescence microscopy, and thermodynamics analysis. Characterizations of superhydrophilic VACNTs films were evaluated by contact angle and X-Ray Photoelectron Spectroscopy. Differences of crowd adhered cells, as well as their spreading on superhydrophilic VACNTs scaffolds, were evaluated using focal adhesion analysis. This study was the first to demonstrate, in real time, that the wettability of VACNTs scaffolds might have enhanced and differential adherence patterns to the MEF-GFP on VACNTs substrates. Highlights: {yields} A simple oxygen plasma treatment was used to obtain superhydrophilic CNT films. {yields} Superhydrophilic CNTs films were successfully produced by incorporation of carboxylic groups. {yields} Cellular adhesion on superhydrophilic VACNT films was analyzed in real time. {yields} Wettability of CNT films directly affects the cellular migration, proliferation and adhesion.

  9. Enhanced dielectric performance in polymer composite films with carbon nanotube-reduced graphene oxide hybrid filler.

    Science.gov (United States)

    Kim, Jin-Young; Kim, TaeYoung; Suk, Ji Won; Chou, Harry; Jang, Ji-Hoon; Lee, Jong Ho; Kholmanov, Iskandar N; Akinwande, Deji; Ruoff, Rodney S

    2014-08-27

    The electrical conductivity and the specific surface area of conductive fillers in conductor-insulator composite films can drastically improve the dielectric performance of those films through changing their polarization density by interfacial polarization. We have made a polymer composite film with a hybrid conductive filler material made of carbon nanotubes grown onto reduced graphene oxide platelets (rG-O/CNT). We report the effect of the rG-O/CNT hybrid filler on the dielectric performance of the composite film. The composite film had a dielectric constant of 32 with a dielectric loss of 0.051 at 0.062 wt% rG-O/CNT filler and 100 Hz, while the neat polymer film gave a dielectric constant of 15 with a dielectric loss of 0.036. This is attributed to the increased electrical conductivity and specific surface area of the rG-O/CNT hybrid filler, which results in an increase in interfacial polarization density between the hybrid filler and the polymer.

  10. Effect of Substrate Morphology on Growth and Field Emission Properties of Carbon Nanotube Films

    Directory of Open Access Journals (Sweden)

    Kumar Vikram

    2008-01-01

    Full Text Available AbstractCarbon nanotube (CNT films were grown by microwave plasma-enhanced chemical vapor deposition process on four types of Si substrates: (i mirror polished, (ii catalyst patterned, (iii mechanically polished having pits of varying size and shape, and (iv electrochemically etched. Iron thin film was used as catalytic material and acetylene and ammonia as the precursors. Morphological and structural characteristics of the films were investigated by scanning and transmission electron microscopes, respectively. CNT films of different morphology such as vertically aligned, randomly oriented flowers, or honey-comb like, depending on the morphology of the Si substrates, were obtained. CNTs had sharp tip and bamboo-like internal structure irrespective of growth morphology of the films. Comparative field emission measurements showed that patterned CNT films and that with randomly oriented morphology had superior emission characteristics with threshold field as low as ~2.0 V/μm. The defective (bamboo-structure structures of CNTs have been suggested for the enhanced emission performance of randomly oriented nanotube samples.

  11. A new carbon structure in annealed film coatings of the carbon-lead system

    Science.gov (United States)

    Volodin, V. N.; Tuleushev, Yu. Zh.; Zhakanbaev, E. A.; Tsai, K. V.; Rofman, O. V.

    2017-01-01

    Carbon-lead solid solutions coexisting with amorphous carbon have been obtained for the first time in a film coating deposited by ion-plasma sputtering. During subsequent vacuum annealing of carbon-lead films containing more than 68.5 at % Pb, this element almost completely evaporates to leave an amorphous carbon coating on a substrate. During annealing at 1100°C, this amorphous carbon crystallizes into a new hexagonal lattice with unit cell parameters a = 0.7603 nm and c = 0.8168 nm. Characteristic X-ray diffraction data for the identification of this phase are determined.

  12. Thickness dependence of critical current density in MgB{sub 2} films fabricated by ex situ annealing of CVD-grown B films in Mg vapor

    Energy Technology Data Exchange (ETDEWEB)

    Hanna, Mina; Salama, Kamel [Department of Mechanical Engineering and Texas Center for Superconductivity, University of Houston, Houston, TX 77204 (United States); Wang, Shufang; Xi, X X [Department of Physics, Pennsylvania State University, University Park, PA 16801 (United States); Redwing, Joan M [Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16801 (United States)], E-mail: ksalama@uh.edu

    2009-01-15

    A study was performed to examine the J{sub c} behavior as a function of thickness in MgB{sub 2} films fabricated by ex situ annealing at 840 deg. C of boron films, grown by chemical vapor deposition, in Mg vapor. The film thicknesses range between 300 nm and 10 {mu}m. The values of J{sub c} range from 1.2 x 10{sup 7} A cm{sup -2} for 300 nm to 1.9 x 10{sup 5} A cm{sup -2} for 10 {mu}m film thicknesses at 20 K and self-field. The study shows that the critical current density (J{sub c}) in MgB{sub 2} films decreases with increasing film thickness, similar to that observed in YBCO-coated conductors. Moreover, our study shows that critical current (I{sub c}) reaches its maximum value of 728 A cm{sup -1} width at {approx}1 {mu}m thick MgB{sub 2} films at 20 K and self-field, which is, interestingly, the same thickness of pulsed-laser-deposited YBCO-coated conductors at which I{sub c} reaches its maximum value. The high J{sub c} values carried by our films show that the ex situ fabrication method can produce high quality MgB{sub 2} films at low processing temperatures, which is promising for RF cavity applications and coated-conductor wires and tapes.

  13. Raman imaging of millimeter-long carbon nanotubes grown by a gas flow method

    Science.gov (United States)

    Kihara, Katsuya; Ishitani, Akihiro; Koyama, Tomohiro; Fukasawa, Mamoru; Inaba, Takumi; Shimizu, Maki; Homma, Yoshikazu

    2017-02-01

    Growing long carbon nanotubes (CNTs) is an important prerequisite for practical applications of CNTs. Although gas-flow-guided chemical vapor deposition can be used to produce millimeter-long CNTs, little is known regarding the associated growth mechanism. In the present work, Raman imaging was employed to characterize individual CNTs grown by the gas flow method, and Raman images of a CNT over 1.6 mm long were obtained. Two radial breathing modes were observed and the associated Raman images exhibited exactly identical distributions, indicating that the long CNT most likely had a double-walled structure, in which the CNT diameter was uniform along the whole length.

  14. Graphene films grown on sapphire substrates via solid source molecular beam epitaxy

    Institute of Scientific and Technical Information of China (English)

    Tang Jun; Kang Chao-Yang; Li Li-Min; Liu Zhong-Liang; Yan Wen-Sheng; Wei Shi-Qiang; Xu Peng-Shou

    2012-01-01

    A method for growing graphene on a sapphire substrate by depositing an SiC buffer layer and then annealing at high temperature in solid source molecular beam epitaxy(SSMBE)equipment was presented.The structural and electronic properties of the samples were characterized by reflection high energy diffraction(RHEED),X-ray diffractionφ scans,Raman spectroscopy,and near edge X-ray absorption fine structure(NEXAFS)spectroscopy.The results of the RHEED and φ scan,as well as the Raman spectra,showed that an epitaxial hexagonal α-SiC layer was grown on the sapphire substrate.The results of the Raman and NEXAFS spectra revealed that the graphene films with the AB Bernal stacking structure were formed on the sapphire substrate after annealing.The layer number of the graphene was between four and five,and the thickness of the unreacted SiC layer was about 1-1.5 mm.

  15. Influence of substrate on structural, morphological and optical properties of ZnO films grown by SILAR method

    Indian Academy of Sciences (India)

    F N Jiménez-García; C L Londoño-Calderón; D G Espinosa-Arbeláez; A Del Real; M E Rodríguez-García

    2014-10-01

    ZnO films were obtained by successive ionic layer adsorption and reaction (SILAR) method from four different substrates: glass microslides, corning glass, quartz and silicon with and without oxide layer. For films deposition, a precursor solution of ZnSO4 was used, complexed with ammonium hydroxide. Prior to the film deposition, wettability of the substrates was analysed using a CCD camera. It was found that the Si without the oxide layer substrate shows hydrophobic behaviour, which makes the films less adherent and not uniform, while in the other substrates, the behaviour was optimal for the growing process. ZnO films grown on glass microslides, corning glass, quartz and Si with oxide layer were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM) and UV–Vis techniques. According to the XRD patterns, the films were polycrystalline, with hexagonal wurtzite structure and the patterns mentioned showed significant differences in crystallite sizes, microstrain and texture coefficient with respect to the employed substrates. The morphology of the ZnO films constituted by rice-like and flower-like structures shows differences in form and size depending on the substrate. The UV–Vis spectroscopy results show that the substrate did not influence the band gap energy value obtained from films.

  16. Low-damping sub-10-nm thin films of lutetium iron garnet grown by molecular-beam epitaxy

    Science.gov (United States)

    Jermain, C. L.; Paik, H.; Aradhya, S. V.; Buhrman, R. A.; Schlom, D. G.; Ralph, D. C.

    2016-11-01

    We analyze the structural and magnetic characteristics of (111)-oriented lutetium iron garnet (Lu3Fe5O12) films grown by molecular-beam epitaxy, for films as thin as 2.8 nm. Thickness-dependent measurements of the in- and out-of-plane ferromagnetic resonance allow us to quantify the effects of two-magnon scattering, along with the surface anisotropy and the saturation magnetization. We achieve effective damping coefficients of 11.1 (9 )×10-4 for 5.3 nm films and 32 (3 )×10-4 for 2.8 nm films, among the lowest values reported to date for any insulating ferrimagnetic sample of comparable thickness.

  17. Transferring MBE-grown topological insulator films to arbitrary substrates and metal-insulator transition via Dirac gap.

    Science.gov (United States)

    Bansal, Namrata; Cho, Myung Rae; Brahlek, Matthew; Koirala, Nikesh; Horibe, Yoichi; Chen, Jing; Wu, Weida; Park, Yun Daniel; Oh, Seongshik

    2014-03-12

    Mechanical exfoliation of bulk crystals has been widely used to obtain thin topological insulator (TI) flakes for device fabrication. However, such a process produces only microsized flakes that are highly irregular in shape and thickness. In this work, we developed a process to transfer the entire area of TI Bi2Se3 thin films grown epitaxially on Al2O3 and SiO2 to arbitrary substrates, maintaining their pristine morphology and crystallinity. Transport measurements show that these transferred films have lower carrier concentrations and comparable or higher mobilities than before the transfer. Furthermore, using this process we demonstrated a clear metal-insulator transition in an ultrathin Bi2Se3 film by gate-tuning its Fermi level into the hybridization gap formed at the Dirac point. The ability to transfer large area TI films to any substrate will facilitate fabrication of TI heterostructure devices, which will help explore exotic phenomena such as Majorana fermions and topological magnetoelectricity.

  18. Effects of sapphire substrates surface treatment on the ZnO thin films grown by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Wang Yinzhen [School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou 510631 (China)], E-mail: agwyz@yahoo.com.cn; Chu Benli [School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou 510631 (China)

    2008-06-01

    The surface treatment effects of sapphire substrate on the ZnO thin films grown by magnetron sputtering were studied. The sapphire substrates properties have been investigated by means of atomic force microscopy (AFM) and X-ray diffraction rocking curves (XRCs). The results show that sapphire substrate surfaces have the best quality by CMP with subsequent chemical etching. The surface treatment effects of sapphire substrate on the ZnO thin films were examined by X-ray diffraction (XRD) and photoluminescence (PL) measurements. Results show that the intensity of (0 0 2) diffraction peak of ZnO thin films on sapphire substrates treated by CMP with subsequent chemical etching was strongest, FWHM of (0 0 2) diffraction peak is the narrowest and the intensity of UV peak of PL spectrum is strongest, indicating surface treatment on sapphire substrate preparation may improve ZnO thin films crystal quality and photoluminescent property.

  19. Etch Pits and Threading Dislocations in GaN Films Grown by Metal-Organic Chemical Vapor Deposition

    Institute of Scientific and Technical Information of China (English)

    陆敏; 常昕; 黎子兰; 杨志坚; 张国义; 章蓓

    2003-01-01

    High quality epitaxial GaN films on (0001) sapphire substrates were grown by a commercial metal-organic chemical vapour deposition system. The, etch pits and threading dislocations in GaN films is studied by a scanning electron microscope (SEM) and a transmission-electron microscope (TEM). The SEM images of GaN films, etched in mixed acid solution (H3PO4:H2SO4 = 1: 3) and molten KOH exhibit notably different, etching pit densities of 5 × 108/cm2 and 4 × 107/cm2, respectively, which probably indicate that more kinds of, etching pits were revealed when, etched in mixed acid solution (H3PO4:H2SO4 = 1: 3). Cross section TEM of GaN films with different g vectors showed the portions of different threading dislocations. Theoretical calculation indicates that the lattice and thermal expansion coefficient mismatch may be the main origins of pure edge threading dislocations.

  20. Epitaxial Properties of Co-Doped ZnO Thin Films Grown by Plasma Assisted Molecular Beam Epitaxy

    Institute of Scientific and Technical Information of China (English)

    CAO Qiang; DENG Jiang-Xia; LIU Guo-Lei; CHEN Yan-Xue; YAN Shi-Shen

    2007-01-01

    High quality Co-doped ZnO thin films are grown on single crystalline Al2O3(0001) and ZnO(0001) substrates by oxygen plasma assisted molecular beam epitaxy at a relatively lower substrate temperature of 450 ℃. The epitaxial conditions are examined with in-situ reflection high energy electron diffraction (RHEED) and ex-situ high resolution x-ray diffraction (HRXRD). The epitaxial thin films are single crystal at film thickness smaller than 500nm and nominal concentration of Co dopant up to 20%. It is indicated that the Co cation is incorporated into the ZnO matrix as Co2+ substituting Zn2+ ions. Atomic force microscopy shows smooth surfaces with rms roughness of 1.9nm. Room-temperature magnetization measurements reveal that the Co-doped ZnO thin films are ferromagnetic with Curie temperatures TC above room temperature.

  1. Perpendicular Magnetic Anisotropy and Spin Glass-like Behavior in Molecular Beam Epitaxy Grown Chromium Telluride Thin Films.

    Science.gov (United States)

    Roy, Anupam; Guchhait, Samaresh; Dey, Rik; Pramanik, Tanmoy; Hsieh, Cheng-Chih; Rai, Amritesh; Banerjee, Sanjay K

    2015-04-28

    Reflection high-energy electron diffraction (RHEED), scanning tunneling microscopy (STM), vibrating sample magnetometry, and other physical property measurements are used to investigate the structure, morphology, magnetic, and magnetotransport properties of (001)-oriented Cr2Te3 thin films grown on Al2O3(0001) and Si(111)-(7×7) surfaces by molecular beam epitaxy. Streaky RHEED patterns indicate flat smooth film growth on both substrates. STM studies show the hexagonal arrangements of surface atoms. Determination of the lattice parameter from the atomically resolved STM image is consistent with the bulk crystal structures. Magnetic measurements show the film is ferromagnetic, having a Curie temperature of about 180 K, and a spin glass-like behavior was observed below 35 K. Magnetotransport measurements show the metallic nature of the film with a perpendicular magnetic anisotropy along the c-axis.

  2. Characterization of Al2O3 Thin Films on GaAs Substrate Grown by Atomic Layer Deposition

    Institute of Scientific and Technical Information of China (English)

    LU Hong-Liang; LI Yan-Bo; XU Min; DING Shi-Jin; SUN Liang; ZHANG Wei; WANG Li-Kang

    2006-01-01

    @@ Al2O3 thin films are grown by atomic layer deposition on GaAs substrates at 300℃. The structural properties of the Al2O3 thin film and the Al2O3/GaAs interface are characterized using x-ray diffraction (XRD), highresolution transmission electron microscopy (HRTEM), and x-ray photoelectron spectroscopy (XPS). The XRD results show that the as-deposited Al2O3 film is amorphous. For 30 atomic layer deposition growth cycles, the thicknesses of the Al2O3 thin film and the interface layer from the HRTEM are 3.3nm and 0.5nm, respectively.XPS analyses reveal that the Al2O3/GaAs interface is almost free from As2O3.

  3. Hole-dominated transport in InSb nanowires grown on high-quality InSb films

    Science.gov (United States)

    Algarni, Zaina; George, David; Singh, Abhay; Lin, Yuankun; Philipose, U.

    2016-12-01

    We have developed an effective strategy for synthesizing p-type indium antimonide (InSb) nanowires on a thin film of InSb grown on glass substrate. The InSb films were grown by a chemical reaction between S b 2 S 3 and I n and were characterized by structural, compositional, and optical studies. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) studies reveal that the surface of the substrate is covered with a polycrystalline InSb film comprised of sub-micron sized InSb islands. Energy dispersive X-ray (EDX) results show that the film is stoichiometric InSb. The optical constants of the InSb film, characterized using a variable-angle spectroscopic ellipsometer (VASE) shows a maximum value for refractive index at 3.7 near 1.8 eV, and the extinction coefficient (k) shows a maximum value 3.3 near 4.1 eV. InSb nanowires were subsequently grown on the InSb film with 20 nm sized Au nanoparticles functioning as the metal catalyst initiating nanowire growth. The InSb nanowires with diameters in the range of 40-60 nm exhibit good crystallinity and were found to be rich in Sb. High concentrations of anions in binary semiconductors are known to introduce acceptor levels within the band gap. This un-intentional doping of the InSb nanowire resulting in hole-dominated transport in the nanowires is demonstrated by the fabrication of a p-channel nanowire field effect transistor. The hole concentration and field effect mobility are estimated to be ≈1.3 × 1017 cm-3 and 1000 cm2 V-1 s-1, respectively, at room temperature, values that are particularly attractive for the technological implications of utilizing p-InSb nanowires in CMOS electronics.

  4. Luminescence properties of lanthanide and ytterbium lanthanide titanate thin films grown by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Hansen, Per-Anders, E-mail: p.a.hansen@kjemi.uio.no; Fjellvåg, Helmer; Nilsen, Ola [Department of Chemistry, Centre for Materials Science and Nanotechnology, University of Oslo, Sem Sælandsvei 26, 0371 Oslo (Norway); Finstad, Terje G. [Department of Physics, Centre for Materials Science and Nanotechnology, University of Oslo, Sem Sælandsvei 24, 0371 Oslo (Norway)

    2016-01-15

    Lanthanide based luminescent materials are highly suitable as down conversion materials in combination with a UV-absorbing host material. The authors have used TiO{sub 2} as the UV-absorbing host material and investigated the energy transfer between TiO{sub 2} and 11 different lanthanide ions, Ln{sup 3+} (Ln = La, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, Yb) in thin films grown by atomic layer deposition. They have also investigated the possibility to improve the overall energy transfer from TiO{sub 2} to Yb{sup 3+} with a second Ln{sup 3+}, in order to enhance down conversion. The films were grown at a substrate temperature of 300 °C, using the Ln(thd){sub 3}/O{sub 3} (thd = 2,2,6,6-tetramethyl-3,5-heptanedione) and TiCl{sub 4}/H{sub 2}O precursor pairs. The focus of the work is to explore the energy transfer from TiO{sub 2} to Ln{sup 3+} ions, and the energy transfer between Ln{sup 3+} and Yb{sup 3+} ions, which could lead to efficient down conversion. The samples have been characterized by x-ray diffraction, x-ray fluorescence, spectroscopic ellipsometry, and photoluminescence. All films were amorphous as deposited, and the samples have been annealed at 600, 800, and 1000 °C in order to investigate the correlation between the crystallinity and luminescence. The lanthanum titanium oxide samples showed a weak and broad emission centered at 540 nm, which was absent in all the other samples, indicating energy transfer from TiO{sub 2} to Ln{sup 3+} in all other lanthanide samples. In the amorphous phase, all samples, apart from La, Tb, and Tm, showed a typical f-f emission when excited by a 325 nm HeCd laser. None of the samples showed any luminescence after annealing at 1000 °C due to the formation of Ln{sub 2}Ti{sub 2}O{sub 7}. Samples containing Nd, Sm, and Eu show a change in emission spectrum when annealed at 800 °C compared to the as-deposited samples, indicating that the smaller lanthanides crystallize in a different manner than the larger

  5. Effects of growth temperature on the properties of atomic layer deposition grown ZrO2 films

    Science.gov (United States)

    Scarel, G.; Ferrari, S.; Spiga, S.; Wiemer, C.; Tallarida, G.; Fanciulli, M.

    2003-07-01

    Zirconium dioxide films are grown in 200 atomic layer deposition cycles. Zirconium tetrachloride (ZrCl4) and water (H2O) are used as precursors. A relatively high dielectric constant (κ=22), wide band gap, and conduction band offset (5.8 and 1.4 eV, respectively) indicate that zirconium dioxide is a most promising substitute for silicon dioxide as a dielectric gate in complementary metal-oxide-semiconductor devices. However, crystallization and chlorine ions in the films might affect their electrical properties. These ions are produced during atomic layer deposition in which the ZrCl4 precursor reacts with the growth surface. It is desirable to tune the composition, morphology, and structural properties in order to improve their benefit on the electrical ones. To address this issue it is necessary to properly choose the growth parameters. This work focuses on the effects of the growth temperature Tg. ZrO2 films are grown at different substrate temperatures: 160, 200, 250, and 350 °C. Relevant modification of the film structure with a change in substrate temperature during growth is expected because the density of reactive sites [mainly Si+1-(OH)-1 bonds] decreases with an increase in temperature [Y. B. Kim et al., Electrochem. Solid-State Lett. 3, 346 (2000)]. The amorphous film component, for example, that develops at Si+1-(OH)-1 sites on the starting growth surface, is expected to decrease with an increase in growth temperature. The size and consequences of film property modifications with the growth temperature are investigated in this work using x-ray diffraction and reflectivity, and atomic force microscopy. Time of flight-secondary ion mass spectrometry is used to study contaminant species in the films. From capacitance-voltage (CV) and current-voltage (IV) measurements, respectively, the dielectric constant κZrO2 and the leakage current are studied as a function of the film growth temperature.

  6. Structural, morphological and optical characterizations of ZnO:Al thin films grown on silicon substrates by pulsed laser deposition

    Science.gov (United States)

    Alyamani, A.; Sayari, A.; Albadri, A.; Albrithen, H.; El Mir, L.

    2016-09-01

    The pulsed laser deposition (PLD) technique is used to grow Al-doped ZnO (AZO) thin films at 500 ° C on silicon substrates under vacuum or oxygen gas background from ablating AZO nanoparticle targets synthesized via the sol-gel process. The structural, morphological and optical properties were characterized by using X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), atomic force microscopy (AFM) and spectroscopic ellipsometry (SE) techniques. XRD and TEM images show that AZO powder has a wurtzite-type structure and is composed of small prismatic-like shape nanoparticles with an average size of 30nm. The structural properties of the AZO films grown under oxygen show no significant changes compared to those of the film grown under vacuum. However, the optical properties show a dependence on the growth conditions of the AZO films. Highly c -axis-oriented AZO thin films were obtained with grain size ˜ 15 nm. The stress in the AZO films is tensile as measured from the c -parameter. The dielectric function, the refractive index and the extinction coefficient as a function of the photon energy for the AZO films were determined by using spectroscopic ellipsometry measurements in the photon energy region from 1 to 6eV. The band gap energy was observed to slightly decrease in the presence of the O2 gas background and this may be attributed to the stress. The surface and volume energy loss functions are calculated and exhibit different behaviors in the energy range 1-6eV. Refractive indices of 1.9-2.1 in the visible region were obtained for the AZO films. Also, the electronic carrier concentration appears to be related to the presence of O2 during the growth process.

  7. Nanogenerators consisting of direct-grown piezoelectrics on multi-walled carbon nanotubes using flexoelectric effects

    Science.gov (United States)

    Han, Jin Kyu; Jeon, Do Hyun; Cho, Sam Yeon; Kang, Sin Wook; Yang, Sun A.; Bu, Sang Don; Myung, Sung; Lim, Jongsun; Choi, Moonkang; Lee, Minbaek; Lee, Min Ku

    2016-07-01

    We report the first attempt to prepare a flexoelectric nanogenerator consisting of direct-grown piezoelectrics on multi-walled carbon nanotubes (mwCNT). Direct-grown piezoelectrics on mwCNTs are formed by a stirring and heating method using a Pb(Zr0.52Ti0.48)O3 (PZT)-mwCNT precursor solution. We studied the unit cell mismatch and strain distribution of epitaxial PZT nanoparticles, and found that lattice strain is relaxed along the growth direction. A PZT-mwCNT nanogenerator was found to produce a peak output voltage of 8.6 V and an output current of 47 nA when a force of 20 N is applied. Direct-grown piezoelectric nanogenerators generate a higher voltage and current than simple mixtures of PZT and CNTs resulting from the stronger connection between PZT crystals and mwCNTs and an enhanced flexoelectric effect caused by the strain gradient. These experiments represent a significant step toward the application of nanogenerators using piezoelectric nanocomposite materials.

  8. Hydroxyapatite growth on multiwall carbon nanotubes grown on titanium fibers from a titanium sheet

    KAUST Repository

    Chetibi, Loubna

    2013-09-27

    Nano-hydroxyapatite (HA) was grown on functionalized multiwalled carbon nanotubes (MWCNTs) deposited on TiO2 nanofibers (NFs) that were hydrothermally grown on Ti metal sheets. The HA was electrochemically grown on the MWCNTs/TiO2 porous layer. It was found that the HA grows on the MWCNTs/TiO2 NFs in the form of dense coating with nanorice grain-shaped. The incorporation of MWCNTs between HA and TiO2 NFs has led to higher adhesion strength as measured by micro-scratching test indicating the benefit of MWCNTs on the improving the bonding strength of HA layer. The obtained coatings exhibit excellent corrosion resistance in simulated body fluid. It is expected that this simple route for preparing the new HA/MWCNTs/TiO2/Ti-layered structure might be used not only in the biomedical field, but also in catalysis and biological sensing among others. © 2013 Springer Science+Business Media New York.

  9. Electric Characteristics of the Carbon Nanotube Network Transistor with Directly Grown ZnO Nanoparticles.

    Science.gov (United States)

    Kim, Un Jeong; Bae, Gi Yoon; Suh, Dong Ik; Park, Wanjun

    2016-03-01

    We report on the electrical characteristics of field effect transistors fabricated with random networks of single-walled carbon nanotubes with surfaces modified by ZnO nanoparticles. ZnO nanoparticles are directly grown on single-walled carbon nanotubes by atomic layer deposition using diethylzinc (DEZ) and water. Electrical observations show that ZnO nanoparticles act as charge transfer sources that provide electrons to the nanotube channel. The valley position in ambipolar transport of nanotube transistors is negatively shifted for 3V due to the electronic n-typed property of ZnO nanoparticles. However, the Raman resonance remains invariant despite the charge transfer effect produced by ZnO nanoparticles.

  10. Dissolved inorganic carbon enhanced growth, nutrient uptake, and lipid accumulation in wastewater grown microalgal biofilms.

    Science.gov (United States)

    Kesaano, Maureen; Gardner, Robert D; Moll, Karen; Lauchnor, Ellen; Gerlach, Robin; Peyton, Brent M; Sims, Ronald C

    2015-03-01

    Microalgal biofilms grown to evaluate potential nutrient removal options for wastewaters and feedstock for biofuels production were studied to determine the influence of bicarbonate amendment on their growth, nutrient uptake capacity, and lipid accumulation after nitrogen starvation. No significant differences in growth rates, nutrient removal, or lipid accumulation were observed in the algal biofilms with or without bicarbonate amendment. The biofilms possibly did not experience carbon-limited conditions because of the large reservoir of dissolved inorganic carbon in the medium. However, an increase in photosynthetic rates was observed in algal biofilms amended with bicarbonate. The influence of bicarbonate on photosynthetic and respiration rates was especially noticeable in biofilms that experienced nitrogen stress. Medium nitrogen depletion was not a suitable stimulant for lipid production in the algal biofilms and as such, focus should be directed toward optimizing growth and biomass productivities to compensate for the low lipid yields and increase nutrient uptake.

  11. Effects of vapor grown carbon nanofibers on electrical and mechanical properties of a thermoplastic elastomer

    Science.gov (United States)

    Basaldua, Daniel Thomas

    Carbon nanofiber (CNF) reinforced composites are exceptional materials that exhibit superior properties compared to conventional composites. This paper presents the development of a vapor grown carbon nanofiber (VGCNF) thermoplastic polyurethane (TPU) composite by a melt mixing process. Dispersion and distribution of CNFs inside the TPU matrix were examined through scanning electron microscopy to determine homogeneity. The composite material underwent durometer, thermal gravimetric analysis, differential scanning calorimetry, heat transfer, hysteresis, dynamic modulus, creep, tensile, abrasion, and electrical conductivity testing to characterize its properties and predict behavior. The motivation for this research is to develop an elastomer pad that is an electrically conductive alternative to the elastomer pads currently used in railroad service. The material had to be a completely homogenous electrically conductive CNF composite that could withstand a harsh dynamically loaded environment. The new material meets mechanical and conductive requirements for use as an elastomer pad in a rail suspension.

  12. Surface structure determinations of crystalline ionic thin films grown on transition metal single crystal surfaces by low energy electron diffraction

    Energy Technology Data Exchange (ETDEWEB)

    Roberts, Joel Glenn [Univ. of California, Berkeley, CA (United States)

    2000-05-01

    The surface structures of NaCl(100), LiF(100) and alpha-MgCl2(0001) adsorbed on various metal single crystals have been determined by low energy electron diffraction (LEED). Thin films of these salts were grown on metal substrates by exposing the heated metal surface to a molecular flux of salt emitted from a Knudsen cell. This method of investigating thin films of insulators (ionic salts) on a conducting substrate (metal) circumvents surface charging problems that plagued bulk studies, thereby allowing the use of electron-based techniques to characterize the surface.

  13. Interface morphology studies of liquid phase epitaxy grown HgCdTe films by atomic force microscopy

    Science.gov (United States)

    Azoulay, M.; George, M. A.; Burger, A.; Collins, W. E.; Silberman, E.

    1994-04-01

    In this paper we report an investigation of the morphology of the interfaces of liquid phase epitaxy (LPE) grown HgCdTe thin films on CdTe and CdZnTe substrates by atomic force microscopy (AFM) on freshly cleaved (110) crystallographic planes. An empirical observation which may be linked to lattice mismatch was indicated by an angle between the cleavage steps of the substrate to those of the film. The precipitates with size ranging from 5 nm to 20 nm were found to be most apparent near the interface.

  14. Dual ion beam deposition of carbon films with diamondlike properties

    Science.gov (United States)

    Mirtich, M. J.; Swec, D. M.; Angus, J. C.

    1984-01-01

    A single and dual ion beam system was used to generate amorphous carbon films with diamond like properties. A methane/argon mixture at a molar ratio of 0.28 was ionized in the low pressure discharge chamber of a 30-cm-diameter ion source. A second ion source, 8 cm in diameter was used to direct a beam of 600 eV Argon ions on the substrates (fused silica or silicon) while the deposition from the 30-cm ion source was taking place. Nuclear reaction and combustion analysis indicate H/C ratios for the films to be 1.00. This high value of H/C, it is felt, allowed the films to have good transmittance. The films were impervious to reagents which dissolve graphitic and polymeric carbon structures. Although the measured density of the films was approximately 1.8 gm/cu cm, a value lower than diamond, the films exhibited other properties that were relatively close to diamond. These films were compared with diamondlike films generated by sputtering a graphite target.

  15. Enhancement of supercapacitance property of electrochemically deposited MnO2 thin films grown in acidic medium

    Science.gov (United States)

    Jana, S. K.; Rao, V. P.; Banerjee, S.

    2014-02-01

    In this communication we present supercapacitance property of MnO2 thin-films which are fabricated on stainless steel (SS) substrate by electro-deposition method carried out in different pH of the electrolyte. A significant improvement of the device performance of acid mediated grown (AMG) MnO2 over normal MnO2 (grown in neutral medium) has been achieved. We have also investigated role of interfacial structure on the internal resistance of the device material. AMG MnO2 film exhibits superior device performance with specific capacitance of 652 F/g which is 2 times better than that obtained in normal MnO2 and also energy density of 90.69 Wh/kg.

  16. Electrical and Optical Studies of Defect Structure of HgCdTe Films Grown by Molecular Beam Epitaxy

    Science.gov (United States)

    Świątek, Z.; Ozga, P.; Izhnin, I. I.; Fitsych, E. I.; Voitsekhovskii, A. V.; Korotaev, A. G.; Mynbaev, K. D.; Varavin, V. S.; Dvoretsky, S. A.; Mikhailov, N. N.; Yakushev, M. V.; Bonchyk, A. Yu.; Savytsky, H. V.

    2016-07-01

    Electrical and optical studies of defect structure of HgCdTe films grown by molecular beam epitaxy (MBE) are performed. It is shown that the peculiarity of these films is the presence of neutral defects formed at the growth stage and inherent to the material grown by MBE. It is assumed that these neutral defects are the Te nanocomplexes. Under ion milling, they are activated by mercury interstitials and form the donor centers with the concentration of 1017 cm-3, which makes it possible to detect such defects by measurements of electrical parameters of the material. Under doping of HgCdTe with arsenic using high temperature cracking, the As2 dimers are present in the arsenic flow and block the neutral Te nanocomplexes to form donor As2Te3 complexes. The results of electrical studies are compared with the results of studies carried out by micro-Raman spectroscopy.

  17. The influence of epitaxial Ti buffer layers for fabricating as-grown MgB{sub 2} films

    Energy Technology Data Exchange (ETDEWEB)

    Oba, T. [Graduate School of Engineering, Iwate University, 4-3-5 Ueda, Morioka, Iwate 020-8551 (Japan)]. E-mail: t3806005@iwate-u.ac.jp; Sun, P. [Graduate School of Engineering, Iwate University, 4-3-5 Ueda, Morioka, Iwate 020-8551 (Japan); Harada, Y. [JST Satellite Iwate, 3-35-2 Iioka-shinden, Morioka, Iwate 020-0852 (Japan); Takahashi, T. [Graduate School of Engineering, Iwate University, 4-3-5 Ueda, Morioka, Iwate 020-8551 (Japan); Iriuda, H. [Graduate School of Engineering, Iwate University, 4-3-5 Ueda, Morioka, Iwate 020-8551 (Japan); Seki, M. [Graduate School of Engineering, Iwate University, 4-3-5 Ueda, Morioka, Iwate 020-8551 (Japan); Nakanishi, Y. [Graduate School of Engineering, Iwate University, 4-3-5 Ueda, Morioka, Iwate 020-8551 (Japan); Noguchi, S. [Department of Physics and Electronics, Osaka Prefecture University, 1-1 Gakuen-cho, Naka-ku, Sakai, Osaka 599-8531 (Japan); JST-CREST, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012 (Japan); Ishida, T. [Department of Physics and Electronics, Osaka Prefecture University, 1-1 Gakuen-cho, Naka-ku, Sakai, Osaka 599-8531 (Japan); JST-CREST, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012 (Japan); Yoshizawa, M. [Graduate School of Engineering, Iwate University, 4-3-5 Ueda, Morioka, Iwate 020-8551 (Japan); JST Satellite Iwate, 3-35-2 Iioka-shinden, Morioka, Iwate 020-0852 (Japan)

    2007-03-15

    We have measured the magnetic field dependence of the resistivity using a 35T pulsed magnet for the as-grown MgB{sub 2} films fabricated on the epitaxial Ti buffer layer grown on c-plane ZnO and Al{sub 2}O{sub 3} substrates by molecular beam epitaxy (MBE). We will report the upper critical fields (H{sub c2}) along H||c-axis and H||ab-plane. The anisotropy ratio were obtained from these H{sub c2} values. The effects of Ti buffer layer on the H{sub c2} and the anisotropy of MgB{sub 2} film were discussed.

  18. Synthesis of as-grown superconducting MgB{sub 2} thin films by molecular beam epitaxy in UHV conditions

    Energy Technology Data Exchange (ETDEWEB)

    Harada, Y.; Uduka, M.; Nakanishi, Y.; Yoshimoto, N.; Yoshizawa, M

    2004-10-01

    As-grown superconducting MgB{sub 2} thin films have been grown on SrTiO{sub 3}(0 0 1), MgO(0 0 1), and Al{sub 2}O{sub 3}(0 0 0 1) substrates by a molecular beam epitaxy (MBE) method with novel co-evaporation conditions of low deposition rate in ultra-high vacuum. The structural and physical properties of the films were studied by RHEED, XRD, electrical resistivity measurements, and SQUID magnetometer. The RHEED patterns indicate three-dimensional growth for MgB{sub 2}. The highest T{sub c} determined by resistivity measurement was about 36 K in these samples. And a clear Meissner effect below T{sub c} was observed using magnetic susceptibility measurement. We will discuss the influence of B buffer layer on the structural and physical properties.

  19. Dielectric and Structural Properties of SrTiO_3 Thin Films Grown by Laser Molecular Beam Epitaxy

    Institute of Scientific and Technical Information of China (English)

    2005-01-01

    Dielectric and Structural Properties of SrTiO_3 Thin Films Grown by Laser Molecular Beam Epitaxy[1]Hao J H,Gao J,Wang Z,et al.Interface structure and phase of epitaxial SrTi O3(110)thin fil ms grown directly on silicon[J].Appl Phys Lett,2005,87:131908. [2]Hao J H,Gao J,Wang HK.SrTi O3(110)thin fil ms grown directly on different oriented silicon substrates[J].Appl Phys A,2005,81:1233. [3]Aki mov I A,Sirenko A A,Clark A M,et al.Electric-field-induced soft-mode hardening in SrTi O3fil ms[J].Phys Rev Lett...

  20. Deposition of calcium carbonate films by a polymer-induced liquid-precursor (PILP) process

    Science.gov (United States)

    Gower, Laurie B.; Odom, Damian J.

    2000-03-01

    A polypeptide additive has been used to transform the solution crystallization of calcium carbonate to a solidification process of a liquid-phase mineral precursor. In situ observations reveal that polyaspartate induces liquid-liquid phase separation of droplets of a mineral precursor. The droplets deposit on the substrate and coalesce to form a coating, which then solidifies into calcitic tablets and films. Transition bars form during the amorphous to crystalline transition, leading to sectorization of calcite tablets, and the defect textures and crystal morphologies are atypical of solution grown crystals. The formation of nonequilibrium crystal morphologies using an acidic polypeptide may have implications in the field of biomineralization, and the environmentally friendly aspects of this polymer-induced liquid-precursor (PILP) process may offer new techniques for aqueous-based processing of ceramic films, coatings, and particulates.

  1. Terahertz Science and Technology of Macroscopically Aligned Carbon Nanotube Films

    Science.gov (United States)

    Kono, Junichiro

    One of the outstanding challenges in nanotechnology is how to assemble individual nano-objects into macroscopic architectures while preserving their extraordinary properties. For example, the one-dimensional character of electrons in individual carbon nanotubes leads to extremely anisotropic transport, optical, and magnetic phenomena, but their macroscopic manifestations have been limited. Here, we describe methods for preparing macroscopic films, sheets, and fibers of highly aligned carbon nanotubes and their applications to basic and applied terahertz studies. Sufficiently thick films act as ideal terahertz polarizers, and appropriately doped films operate as polarization-sensitive, flexible, powerless, and ultra-broadband detectors. Together with recently developed chirality enrichment methods, these developments will ultimately allow us to study dynamic conductivities of interacting one-dimensional electrons in macroscopic single crystals of single-chirality single-wall carbon nanotubes.

  2. Substrate dependent structural, optical and electrical properties of ZnS thin films grown by RF sputtering

    Science.gov (United States)

    Pathak, Trilok K.; Kumar, Vinod; Purohit, L. P.; Swart, H. C.; Kroon, R. E.

    2016-10-01

    Zinc sulphide (ZnS) films are of great importance for applications in various optoelectronic devices. ZnS thin films were grown on glass, indium tin oxide (ITO) and Corning glass substrates by radio-frequency magnetron sputtering at a temperature of 373 K and a comparative study of the structural, optical and electrical properties was performed using X-ray diffraction (XRD), scanning electron microscopy, optical and current-voltage (I-V) measurements. The XRD patterns showed that the sputtered thin films exhibited good crystallinity with the (111) peak around 2θ=28.3° indicating preferential orientation of the cubic structure. The maximum strain and most densely packed grains were obtained for the Corning glass substrate. The transmittance spectra of the films were measured in the wavelength range from 200 to 800 nm, showing that the films are about 77% transparent in the visible region. A slight change of 3.50 eV to 3.54 eV was found for the bandgap of the films deposited on different substrates. The ZnS thin films deposited on Corning glass show better crystallinity, morphology and I-V characteristics than that deposited on ordinary glass and ITO substrates.

  3. Structure and morphology of Ru films grown by atomic layer deposition from 1-ethyl-1’-methyl-ruthenocene

    Science.gov (United States)

    Kukli, Kaupo; Aarik, Jaan; Aidla, Aleks; Uustare, Teet; Jõgi, Indrek; Lu, Jun; Tallarida, Massimo; Kemell, Marianna; Kiisler, Alma-Asta; Ritala, Mikko; Leskelä, Markku

    2010-06-01

    Ru thin films were grown on TiO 2, Al 2O 3, HfO 2, and ZrO 2 films as well as on HF-etched silicon and SiO 2-covered silicon by atomic layer deposition from 1-ethyl-1'-methyl-ruthenocene, (CH 3C 5H 4)(C 2H 5C 5H 4)Ru, and oxygen. The growth of Ru was obtained and characterized at temperatures ranging from 250 to 325 °C. On epitaxial rutile, highly oriented growth of Ru with hexagonal structure was achieved, while on other substrates the films possessed nonoriented hexagonal structure. Ruthenium oxide was not detected in the films. The lowest resistivity value obtained for 5.0-6.6 nm thick films was 26 μΩ cm. The conductivity of the films depended somewhat on the deposition cycle time parameters and, expectedly, more strongly on the amount of deposition cycles. Increase in the deposition temperature of underlying metal oxide films increased the conductivity of Ru layers.

  4. Oxidation of fluorinated amorphous carbon (a-CF(x)) films.

    Science.gov (United States)

    Yun, Yang; Broitman, Esteban; Gellman, Andrew J

    2010-01-19

    Amorphous fluorinated carbon (a-CF(x)) films have a variety of potential technological applications. In most such applications these films are exposed to air and undergo partial surface oxidation. X-ray photoemission spectroscopy has been used to study the oxidation of fresh a-CF(x) films deposited by magnetron sputtering. The oxygen sticking coefficient measured by exposure to low pressures (<10(-3) Torr) of oxygen at room temperature is on the order of S approximately 10(-6), indicating that the surfaces of these films are relatively inert to oxidation when compared with most metals. The X-ray photoemission spectra indicate that the initial stages of oxygen exposure (<10(7) langmuirs) result in the preferential oxidation of the carbon atoms with zero or one fluorine atom, perhaps because these carbon atoms are more likely to be found in configurations with unsaturated double bonds and radicals than carbon atoms with two or three fluorine atoms. Exposure of the a-CF(x) film to atmospheric pressures of air (effective exposure of 10(12) langmuirs to O(2)) results in lower levels of oxygen uptake than the low pressure exposures (<10(7) langmuirs). It is suggested that this is the result of oxidative etching of the most reactive carbon atoms, leaving a relatively inert surface. Finally, low pressure exposures to air result in the adsorption of both nitrogen and oxygen onto the surface. Some of the nitrogen adsorbed on the surface at low pressures is in a reversibly adsorbed state in the sense that subsequent exposure to low pressures of O(2) results in the displacement of nitrogen by oxygen. Similarly, when an a-CF(x) film oxidized in pure O(2) is exposed to low pressures of air, some of the adsorbed oxygen is displaced by nitrogen. It is suggested that these forms of nitrogen and oxygen are bound to free radical sites in the film.

  5. Application of nitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous carbon composite films for ultraviolet detection

    Science.gov (United States)

    Zkria, Abdelrahman; Gima, Hiroki; Yoshitake, Tsuyoshi

    2017-03-01

    Nitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous carbon (UNCD/a-C:H) films were grown by coaxial arc plasma deposition in the ambient of nitrogen and hydrogen mixed gases. Synthesized films were structurally investigated by X-ray photoemission and near-edge X-ray absorption fine structure spectroscopies. A heterojunction with p-type Si substrate was fabricated to study the ultraviolet photodetection properties of the film. Capacitance-voltage measurements assure the expansion of a depletion region into the film side. Current-voltage curves in the dark showed a good rectifying behaviour in the bias voltages range between ±5 V. Under 254 nm monochromatic light, the heterojunction shows a capability of deep ultraviolet light detection, which can be attribute to the existence of UNCD grains. As the diode was cooled from 300 K down to 150 K, the detectivity has a notable enhancement from 1.94 × 105 cm Hz1/2 W-1 at 300 K to 5.11 × 1010 cm Hz1/2 W-1 at 150 K, which is mainly due to a remarkable reduction in the leakage current at low temperatures. It was experimentally demonstrated that nitrogen-doped UNCD/a-C:H film works as ultraviolet-range photovoltaic material.

  6. Improved field emission properties of carbon nanotubes grown on stainless steel substrate and its application in ionization gauge

    Science.gov (United States)

    Li, Detian; Cheng, Yongjun; Wang, Yongjun; Zhang, Huzhong; Dong, Changkun; Li, Da

    2016-03-01

    Vertically aligned carbon nanotube (CNT) arrays were fabricated by chemical vapor deposition (CVD) technique on different substrates. Microstructures and field emission characteristics of the as-grown CNT arrays were investigated systematically, and its application in ionization gauge was also evaluated preliminarily. The results indicate that the as-grown CNT arrays are vertically well-aligned relating to the substrate surfaces, but the CNTs grown on stainless steel substrate are longer and more crystalline than the ones grown on silicon wafer substrate. The field emission behaviors of the as-grown CNT arrays are strongly dependent upon substrate properties. Namely, the CNT array grown on stainless steel substrate has better field emission properties, including lower turn on and threshold fields, better emission stability and repeatability, compared with the one grown on silicon wafer substrate. The superior field emission properties of the CNT array grown on stainless steel substrate are mainly attributed to low contact resistance, high thermal conductivity, good adhesion strength, etc. In addition, the metrological behaviors of ionization gauge with the CNT array grown on stainless steel substrate as an electron source were investigated, and this novel cathode ionization gauge extends the lower limit of linear pressure measurement to 10-8 Pa, which is one order of magnitude lower than the result reported for the same of gauge with CNT cathode.

  7. Methods of Boron-carbon Deposited Film Removal

    Science.gov (United States)

    Airapetov, A.; Terentiev, V.; Voituk, A.; Zakharov, A.

    Boron carbide was proposed as a material for in-situ renewable protecting coating for tungsten tiles of the ITER divertor. It is necessary to develop a method of gasification of boron-carbon film which deposits during B4C sputtering. In this paper the results of the first stage investigation of gasification methods of boron-carbon films are presented. Two gasification methods of films are investigated: interaction with the ozone-oxygen mixture and irradiation in plasma with the working gas composed of oxygen, ethanol, and, in some cases, helium. The gasification rate in the ozone-oxygen mixture at 250 °C for B/C films with different B/C ratio and carbon fiber composite (CFC), was measured. For B/C films the gasification rate decreased with increasing B/C ratio (from 45 nm/h at B/C=0.7 to 4 nm/h at B/C=2.1; for CFC - 15 μm/h). Films gasification rates were measured under ion irradiation from ethanol-oxygen-helium plasma at different temperatures, with different ion energies and different gas mixtures. The maximum obtained removal rate was near 230 nm/h in case of ethanol-oxygen plasma and at 150°C of the sample temperature.

  8. Infrared analysis of thin films amorphous, hydrogenated carbon on silicon

    CERN Document Server

    Jacob, W; Schwarz-Selinger, T

    2000-01-01

    The infrared analysis of thin films on a thick substrate is discussed using the example of plasma-deposited, amorphous, hydrogenated carbon layers (a-C:H) on silicon substrates. The framework for the optical analysis of thin films is presented. The main characteristic of thin film optics is the occurrence of interference effects due to the coherent superposition of light multiply reflected at the various internal and external interfaces of the optical system. These interference effects lead to a sinusoidal variation of the transmitted and reflected intensity. As a consequence, the Lambert-Beer law is not applicable for the determination of the absorption coefficient of thin films. Furthermore, observable changes of the transmission and reflection spectra occur in the vicinity of strong absorption bands due to the Kramers-Kronig relation. For a sound data evaluation these effects have to be included in the analysis. To be able to extract the full information contained in a measured optical thin film spectrum, ...

  9. Acceleration sensing based on piezoresistive effect of carbon nanotube films

    Institute of Scientific and Technical Information of China (English)

    WEI Feng-yan; SHEN Hui-juan; CAO Chun-lan; LIAO Ke-jun; HU Chen-guo

    2006-01-01

    Based on piezoresistive effect,the acceleration sensitivity of multi-walled canbon nanotube (MWNT) films was investigated.A three-point bending technique was presented to measure the piezoresistivity,which used a bending stress applied to the samples while making MWNT films wheeling with a rotational machine.The experimental results showed that the fractional increase in resistance increases linearly versus the increase of centripetal acceleration,and there is a linear relationship between the acceleration and the strain.These shed light on using carbon nanotube films as acceleration sensors for many potential applications.

  10. Assembly and Applications of Carbon Nanotube Thin Films

    Institute of Scientific and Technical Information of China (English)

    Hongwei ZHU; Bingqing WEI

    2008-01-01

    The ultimate goal of current research on carbon nanotubes (CNTs) is to make breakthroughs that advance nanotechnological applications of bulk CNT materials. Especially, there has been growing interest in CNT thin films because of their unique and usually enhanced properties and tremendous potential as components for use in nano-electronic and nano-mechanical device applications or as structural elements in various devices. If a synthetic or a post processing method can produce high yield of nanotube thin films, these structures will provide tremendous potential for fundamental research on these devices. This review will address the synthesis, the post processing and the device applications of self-assembled nanotube thin films.

  11. Removal of Ozone by Carbon Nanotubes/Quartz Fiber Film.

    Science.gov (United States)

    Yang, Shen; Nie, Jingqi; Wei, Fei; Yang, Xudong

    2016-09-01

    Ozone is recognized as a harmful gaseous pollutant, which can lead to severe human health problems. In this study, carbon nanotubes (CNTs) were tested as a new approach for ozone removal. The CNTs/quartz fiber film was fabricated through growth of CNTs upon pure quartz fiber using chemical vapor deposition method. Ozone conversion efficiency of the CNTs/quartz fiber film was tested for 10 h and compared with that of quartz film, activated carbon (AC), and a potassium iodide (KI) solution under the same conditions. The pressure resistance of these materials under different airflow rates was also measured. The results showed that the CNTs/quartz fiber film had better ozone conversion efficiency but also higher pressure resistance than AC and the KI solution of the same weight. The ozone removal performance of the CNTs/quartz fiber film was comparable with AC at 20 times more weight. The CNTs played a dominant role in ozone removal by the CNTs/quartz fiber film. Its high ozone conversion efficiency, lightweight and free-standing properties make the CNTs/quartz fiber film applicable to ozone removal. Further investigation should be focused on reducing pressure resistance and studying the CNT mechanism for removing ozone.

  12. Enhanced nucleation and post-growth investigations on HFCVD diamond films grown on silicon single crystals pretreated with Zr:diamond mixed slurry

    Energy Technology Data Exchange (ETDEWEB)

    Dua, A.K.; Roy, M.; Nuwad, J.; George, V.C.; Sawant, S.N

    2004-05-15

    Two sets, one deposited for {approx}20 min and other for {approx}1 h of diamond thin film samples are prepared following pretreatment of silicon substrates using mixed slurry containing different weight ratio of zirconium and diamond particles. The films are characterized ex situ using XRD, Raman spectroscopy, photoluminescence (PL), FTIR and atomic force microscopy (AFM). As evidenced from AFM topography, nucleation density as high as 2.5x10{sup 9} particles/cm{sup 2} could be achieved in spite of posttreatment cleaning of the substrates with methanol. It has been found that the nucleation density increases, while particle size and RMS surface roughness subsides with increasing metal concentration in the mixed slurry. Raman and PL spectra of both the 20 min and 1 h samples have been recorded to check the quality of the deposits. Although a significant amount non-diamond carbon impurities is found to be present mostly at the grain boundaries of the films, the concentration of defects due to [Si-V]{sup 0} complex reduces substantially for full-grown samples and also for 20 min samples pretreated with metal-rich slurries. The plausible role of the intermediate layers behind these effects has been explored.

  13. Continuous Carbon Nanotube-Based Fibers and Films for Applications Requiring Enhanced Heat Dissipation.

    Science.gov (United States)

    Liu, Peng; Fan, Zeng; Mikhalchan, Anastasiia; Tran, Thang Q; Jewell, Daniel; Duong, Hai M; Marconnet, Amy M

    2016-07-13

    The production of continuous carbon nanotube (CNT) fibers and films has paved the way to leverage the superior properties of individual carbon nanotubes for novel macroscale applications such as electronic cables and multifunctional composites. In this manuscript, we synthesize fibers and films from CNT aerogels that are continuously grown by floating catalyst chemical vapor deposition (FCCVD) and measure thermal conductivity and natural convective heat transfer coefficient from the fiber and film. To probe the mechanisms of heat transfer, we develop a new, robust, steady-state thermal characterization technique that enables measurement of the intrinsic fiber thermal conductivity and the convective heat transfer coefficient from the fiber to the surrounding air. The thermal conductivity of the as-prepared fiber ranges from 4.7 ± 0.3 to 28.0 ± 2.4 W m(-1) K(-1) and depends on fiber volume fraction and diameter. A simple nitric acid treatment increases the thermal conductivity by as much as a factor of ∼3 for the fibers and ∼6.7 for the thin films. These acid-treated CNT materials demonstrate specific thermal conductivities significantly higher than common metals with the same absolute thermal conductivity, which means they are comparatively lightweight, thermally conductive fibers and films. Beyond thermal conductivity, the acid treatment enhances electrical conductivity by a factor of ∼2.3. Further, the measured convective heat transfer coefficients range from 25 to 200 W m(-2) K(-1) for all fibers, which is higher than expected for macroscale materials and demonstrates the impact of the nanoscale CNT features on convective heat losses from the fibers. The measured thermal and electrical performance demonstrates the promise for using these fibers and films in macroscale applications requiring effective heat dissipation.

  14. The Luminescent Properties and Atomic Structures of As-Grown and Annealed Nanostructured Silicon Rich Oxide Thin Films

    Directory of Open Access Journals (Sweden)

    N. D. Espinosa-Torres

    2016-01-01

    Full Text Available Not long ago, we developed a theoretical model to describe a set of chemical reactions that can potentially occur during the process of obtaining Silicon Rich Oxide (SRO films, an off stoichiometry material, notwithstanding the technique used to grow such films. In order to elucidate the physical chemistry properties of such material, we suggested the chemical reactions that occur during the process of growing of SRO films in particular for the case of the Low Pressure Chemical Vapor Deposition (LPCVD technique in the aforementioned model. The present paper represents a step further with respect to the previous (published work, since it is dedicated to the calculation by Density Functional Theory (DFT of the optical and electronic properties of the as-grown and annealed SRO structures theoretically predicted on the basis of the previous work. In this work, we suggest and evaluate either some types of molecules or resulting nanostructures and we predict theoretically, by applying the DFT, the contribution that they may have to the phenomenon of luminescence (PL, which is experimentally measured in SRO films. We evaluated the optical and electronic properties of both the as-grown and the annealed structures.

  15. Embedded polytypes in Bi2Sr2-xLaxCuO6 thin films grown by laser ablation

    Science.gov (United States)

    Cancellieri, C.; Lin, P. H.; Ariosa, D.; Pavuna, D.

    2007-11-01

    We investigate the presence of secondary phases in La-doped Bi-2201 thin films grown by laser ablation. The cation ratios in the target material, the oxygen pressure, and the substrate temperature during the deposition are the main parameters determining the presence of diluted intergrowth and/or polytype aggregates. A statistical model of random intergrowth is used to analyze the x-ray diffraction (XRD) anomalies caused by hidden defects and to characterize the latter. A detailed structural XRD refinement on oriented aggregates allows us to identify the guest phase as a Bi deficient phase, Bi-1201. The occurrence of this particular embedded polytype is accompanied by a global Bi deficiency introduced in the films by the growing process and/or by the annealing treatment. The presence of La favors the Bi-1201 formation mostly as La-rich c -axis oriented aggregates. Bi excess in the target material improves considerably the crystallographic structure of Bi-2201, avoids intergrowth formation, but does not prevent the phase separation of Bi-1201 in La-doped thin films. We also investigate the influence of the deposition parameters on the type of intergrowth as well as their variation with La doping. This work introduces a specific methodology for optimizing the growth of thin films grown by laser ablation, which applies to layered oxides that admit polytypes with close formation enthalpies in their phase diagram.

  16. Room temperature ferromagnetism in epitaxial Cr{sub 2}O{sub 3} thin films grown on r-sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Punugupati, Sandhyarani, E-mail: spunugu@ncsu.edu; Narayan, Jagdish; Hunte, Frank [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States)

    2015-05-21

    We report on the epitaxial growth and magnetic properties of Cr{sub 2}O{sub 3} thin films grown on r-sapphire substrate using pulsed laser deposition. The X-ray diffraction (XRD) (2θ and Φ) and TEM characterization confirm that the films are grown epitaxially. The r-plane (011{sup ¯}2) of Cr{sub 2}O{sub 3} grows on r-plane of sapphire. The epitaxial relations can be written as [011{sup ¯}2] Cr{sub 2}O{sub 3} ‖ [011{sup ¯}2] Al{sub 2}O{sub 3} (out-of-plane) and [1{sup ¯}1{sup ¯}20] Cr{sub 2}O{sub 3} ‖ [1{sup ¯}1{sup ¯}20] Al{sub 2}O{sub 3} (in-plane). The as-deposited films showed ferromagnetic behavior up to 400 K but ferromagnetism almost vanishes with oxygen annealing. The Raman spectroscopy data together with strain measurements using high resolution XRD indicate that ferromagnetism in r-Cr{sub 2}O{sub 3} thin films is due to the strain caused by defects, such as oxygen vacancies.

  17. Carbon dioxide and water adsorption on highly epitaxial Delafossite CuFeO2 thin film

    Science.gov (United States)

    Rojas, S.; Joshi, T.; Borisov, P.; Sarabia, M.; Lederman, D.; Cabrera, A. L.

    2015-03-01

    Thermal programmed desorption (TPD) of CO2 and H2O from a 200 nm thick CuFeO2 Delafossite surface was performed in a standard UHV chamber, The CuFeO2 thin film grown using Pulsed Laser Deposition (PLD) over an Al2O3 (0001) substrate with controlled O2 atmosphere resulted with highly epitaxial crystal structure. The adsorption/desorption of CO2 and H2O process was also monitored with X-ray Photoelectron Spectroscopy (XPS) and Auger Electron Spectroscopy (AES). Our results revealed that carbon dioxide interacts with CuFeO2 forming Fe carbonates compounds on its surface. Hydroxides were also formed on the surface due to water presence. Using TPD data, Arrhenius plots for CO2 and water desorption were done and activation energy for desorption was obtained. Funds FONDECyT 1130372; Thanks to P. Ferrari.

  18. Correlation of nanochemistry and electrical properties in HfO2 films grown by metalorganic molecular-beam epitaxy

    Science.gov (United States)

    Moon, Tae-Hyoung; Ham, Moon-Ho; Myoung, Jae-Min

    2005-03-01

    We present the annealing effects on nanochemistry and electrical properties in HfO2 dielectrics grown by metalorganic molecular-beam epitaxy. After the postannealing treatment of HfO2 films in the temperature range of 600-800°C, the thicknesses and chemical states of the films were examined by high-resolution transmission electron microscopy and angle-resolved x-ray photoelectron spectroscopy. By comparing the line shapes of core-level spectra for the samples with different annealing temperatures, the concentrations of SiO and Hf-silicate with high dielectric constant are found to be highest for HfO2 film annealed at 700°C. This result supports that the accumulation capacitance of the sample annealed at 700°C is not deteriorated in spite of a steep increase in interfacial layer thickness compared with that of the sample annealed at 600°C.

  19. Effects of nitrogen on the growth and optical properties of ZnO thin films grown by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Cui, J B; Thomas, M A; Soo, Y C; Kandel, H; Chen, T P [Department of Physics and Astronomy, University of Arkansas at Little Rock, Little Rock, AR 72204 (United States)

    2009-08-07

    ZnO thin films were grown using pulsed laser deposition by ablating a Zn target in various mixtures of O{sub 2} and N{sub 2}. The presence of N{sub 2} during deposition was found to affect the growth of the ZnO thin films and their optical properties. Small N{sub 2} concentrations during growth led to strong acceptor-related photoluminescence (PL), while larger concentrations affected both the intensity and temperature dependence of the emission peaks. In addition, the PL properties of the annealed ZnO thin films are associated with the N{sub 2} concentration during their growth. The possible role of nitrogen in ZnO growth and annealing is discussed.

  20. Unconventional magnetization of Fe3O4 thin film grown on amorphous SiO2 substrate

    Directory of Open Access Journals (Sweden)

    Jia-Xin Yin

    2016-06-01

    Full Text Available High quality single crystal Fe3O4 thin films with (111 orientation had been prepared on amorphous SiO2 substrate by pulsed laser deposition. The magnetization properties of the films are found to be unconventional. The Verwey transition temperature derived from the magnetization jump is around 140K, which is higher than the bulk value and it can be slightly suppressed by out-plane magnetic field; the out-of-plane magnetization, which is unexpectedly higher than the in-plane value, is also significantly increased as compared with the bulk value. Our findings highlight the unusual magnetization of Fe3O4 thin film grown on the amorphous SiO2 substrate.

  1. Positive magnetoresistance in ferromagnetic Nd-doped In2O3 thin films grown by pulse laser deposition

    KAUST Repository

    Xing, G. Z.

    2014-05-23

    We report the magnetic and magnetotransport properties of (In 0.985Nd0.015)2O2.89 thin films grown by pulse laser deposition. The clear magnetization hysteresis loops with the complementary magnetic domain structure reveal the intrinsic room temperature ferromagnetism in the as-prepared films. The strong sp-f exchange interaction as a result of the rare earth doping is discussed as the origin of the magnetotransport behaviours. A positive magnetoresistance (∼29.2%) was observed at 5 K and ascribed to the strong ferromagnetic sp-f exchange interaction in (In0.985Nd0.015)2O 2.89 thin films due to a large Zeeman splitting in an external magnetic field of 50 KOe. © 2014 AIP Publishing LLC.

  2. Novel stage in fabrication of as-grown MgB{sub 2} films by adopting Ti seed layer

    Energy Technology Data Exchange (ETDEWEB)

    Harada, Y. [JST Satellite Iwate, Japan Science and Technology Agency, 3-35-2 Iiokashinden, Morioka, Iwate 020-0852 (Japan)], E-mail: yharada@iwate-jst-satellite.jp; Yamaguchi, H. [National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba 305-8568 (Japan); Oba, T. [Graduate School of Engineering, Iwate University, 4-3-5 Ueda, Morioka, Iwate 020-8551 (Japan); Fujine, Y. [JST Satellite Iwate, Japan Science and Technology Agency, 3-35-2 Iiokashinden, Morioka, Iwate 020-0852 (Japan); Goto, S. [Lightom, Sugo 95-2, Takizawa 020-0173 (Japan); Iriuda, H. [Graduate School of Engineering, Iwate University, 4-3-5 Ueda, Morioka, Iwate 020-8551 (Japan); Yoshizawa, M. [National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba 305-8568 (Japan)

    2007-10-01

    We report that Ti buffer layer improves the structural quality and superconducting properties of MgB{sub 2} film deposited on ZnO (0 0 0 1) and Al{sub 2}O{sub 3} (0 0 0 1) substrates using molecular beam epitaxy. It was found that Ti layers were grown epitaxially on the substrates and the MgB{sub 2} films were c-axis oriented with two types of in-plane orientations. The crystal quality measured by the rocking curve width of X-ray diffraction peak was improved and superconducting transition temperature increased as the buffer layer thickness increased on both substrates. The highest T{sub c} observed in this study was 37 K and 35 K in the film deposited on the Ti buffer layer 50 nm thick with the ZnO and Al{sub 2}O{sub 3} substrates, respectively.

  3. Dislocation densities reduction in MBE-grown AlN thin films by high-temperature annealing

    Science.gov (United States)

    Nemoz, Maud; Dagher, Roy; Matta, Samuel; Michon, Adrien; Vennéguès, Philippe; Brault, Julien

    2017-03-01

    AlN thin films, grown on (0001) sapphire substrates by molecular beam epitaxy (MBE), were annealed at high temperature (up to 1650 °C) in flowing N2. X-ray diffraction (XRD) studies, combined with Williamson-Hall and Srikant plots, have shown that annealing leads to a strong reduction of both edge and mixed threading dislocation densities, as confirmed by transmission electron microscopy (TEM) images, up to 75%. Moreover, it is found that annealing at high temperatures allows the relaxation of the tensile strain in the AlN film due to the growth process. In addition, the morphological properties of the films were determined by atomic force microscopy (AFM) and show that the annealing conditions have a strong impact on the surface morphology and roughness. Finally, an annealing at 1550 °C for 20 min appears as an ideal tradeoff to enhance the structural properties while preserving the initial AlN surface morphology.

  4. Oxygen Pressure Dependence of Properties of Epitaxial LaAlO3 Films Grown on Si (100)

    Institute of Scientific and Technical Information of China (English)

    XIANG Wen-Feng; LU Hui-Bin; CHEN Zheng-Hao; HE Meng; ZHOU Yue-Liang

    2005-01-01

    @@ Heteroepitaxial LaAlO3 films were grown on a SrTiO3/Si (100) substrate by laser molecular beam epitaxy under different oxygen pressures, and their properties such as crystallinity and electrical characteristics were experimentally investigated using the various measurement methods. The results show that most properties depend mainly on the deposition oxygen pressure. The crystallinity and the C-V and I-V characteristics can be greatly improved with the increasing oxygen deposition pressure. Moreover, after annealed at 1050℃ in N2 ambient, the C-V and I-V characteristics of LAO films deposited at the lower oxygen pressure are also improved due to the decrease of oxygen vacancies in LAO films.

  5. Thermal property tuning in aligned carbon nanotube films and random entangled carbon nanotube films by ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Jing [Department of Materials Science and Engineering, Texas A& M University, College Station, Texas 77843 (United States); Chen, Di; Wang, Xuemei [Department of Nuclear Engineering, Texas A& M University, College Station, Texas 77843 (United States); Bykova, Julia S.; Zakhidov, Anvar A. [The Alan G. MacDiarmid NanoTech Institute, University of Texas at Dallas, Richardson, Texas 75080 (United States); Shao, Lin, E-mail: lshao@tamu.edu [Department of Materials Science and Engineering, Texas A& M University, College Station, Texas 77843 (United States); Department of Nuclear Engineering, Texas A& M University, College Station, Texas 77843 (United States)

    2015-10-12

    Ion irradiation effects on thermal property changes are compared between aligned carbon nanotube (A-CNT) films and randomly entangled carbon nanotube (R-CNT) films. After H, C, and Fe ion irradiation, a focusing ion beam with sub-mm diameter is used as a heating source, and an infrared signal is recorded to extract thermal conductivity. Ion irradiation decreases thermal conductivity of A-CNT films, but increases that of R-CNT films. We explain the opposite trends by the fact that neighboring CNT bundles are loosely bonded in A-CNT films, which makes it difficult to create inter-tube linkage/bonding upon ion irradiation. In a comparison, in R-CNT films, which have dense tube networking, carbon displacements are easily trapped between touching tubes and act as inter-tube linkage to promote off-axial phonon transport. The enhancement overcomes the phonon transport loss due to phonon-defect scattering along the axial direction. A model is established to explain the dependence of thermal conductivity changes on ion irradiation parameters including ion species, energies, and current.

  6. Magnetic properties of Sm-Co thin films grown on MgO(100) deposited from a single alloy target

    Energy Technology Data Exchange (ETDEWEB)

    Verhagen, T. G. A.; Boltje, D. B.; Ruitenbeek, J. M. van; Aarts, J., E-mail: aarts@physics.leidenuniv.nl [Huygens-Kamerlingh Onnes Laboratorium, Universiteit Leiden, P.O. Box 9504, 2300 RA Leiden (Netherlands)

    2014-08-07

    We have grown epitaxial Sm-Co thin films by sputter deposition from a single alloy target with a nominal SmCo{sub 5} composition on Cr(100)-buffered MgO(100) single-crystal substrates. By varying the Ar gas pressure, we can change the composition of the film from a SmCo{sub 5}-like to a Sm{sub 2}Co{sub 7}-like phase. The composition, crystal structure, morphology, and magnetic properties of these films have been determined using Rutherford Backscattering, X-ray diffraction, and magnetization measurements. We find that we can grow films with, at room temperature, coercive fields as high as 3.3 T, but with a remanent magnetization which is lower than can be expected from the texturing. This appears to be due to the Sm content of the films, which is higher than expected from the content of the target, even at the lowest possible sputtering pressures. Moreover, we find relatively large variations of film properties using targets of nominally the same composition. At low temperatures, the coercive fields increase, as expected for these hard magnets, but in the magnetization, we observe a strong background signal from the paramagnetic impurities in the MgO substrates.

  7. Magnetic properties of Sm-Co thin films grown on MgO(100) deposited from a single alloy target

    Science.gov (United States)

    Verhagen, T. G. A.; Boltje, D. B.; van Ruitenbeek, J. M.; Aarts, J.

    2014-08-01

    We have grown epitaxial Sm-Co thin films by sputter deposition from a single alloy target with a nominal SmCo5 composition on Cr(100)-buffered MgO(100) single-crystal substrates. By varying the Ar gas pressure, we can change the composition of the film from a SmCo5-like to a Sm2Co7-like phase. The composition, crystal structure, morphology, and magnetic properties of these films have been determined using Rutherford Backscattering, X-ray diffraction, and magnetization measurements. We find that we can grow films with, at room temperature, coercive fields as high as 3.3 T, but with a remanent magnetization which is lower than can be expected from the texturing. This appears to be due to the Sm content of the films, which is higher than expected from the content of the target, even at the lowest possible sputtering pressures. Moreover, we find relatively large variations of film properties using targets of nominally the same composition. At low temperatures, the coercive fields increase, as expected for these hard magnets, but in the magnetization, we observe a strong background signal from the paramagnetic impurities in the MgO substrates.

  8. Anomalous thickness-dependent optical energy gap of ALD-grown ultra-thin CuO films

    Science.gov (United States)

    Tripathi, T. S.; Terasaki, I.; Karppinen, M.

    2016-11-01

    Usually an inverse square relation between the optical energy gap and the size of crystallites is observed for semiconducting materials due to the strong quantum localization effect. Coulomb attraction that may lead to a proportional dependence is often ignored or considered less important to the optical energy gap when the crystallite size or the thickness of a thin film changes. Here we report a proportional dependence between the optical energy gap and the thickness of ALD-grown CuO thin films due to a strong Coulomb attraction. The ultrathin films deposited in the thickness range of 9-81 nm show a p-type semiconducting behavior when analyzed by Seebeck coefficient and electrical resistivity measurements. The indirect optical energy gap nature of the films is verified from UV-vis spectrophotometric measurements. A progressive increase in the indirect optical energy gap from 1.06 to 1.24 eV is observed with the increase in the thickness of the films. The data are analyzed in the presence of Coulomb attractions using the Brus model. The optical energy gap when plotted against the cubic root of the thickness of the films shows a linear dependence.

  9. Thin yttrium iron garnet films grown by pulsed laser deposition: Crystal structure, static, and dynamic magnetic properties

    Energy Technology Data Exchange (ETDEWEB)

    Sokolov, N. S., E-mail: nsokolov@fl.ioffe.ru; Fedorov, V. V.; Korovin, A. M.; Suturin, S. M.; Baranov, D. A.; Gastev, S. V.; Krichevtsov, B. B.; Bursian, V. E.; Lutsev, L. V. [Ioffe Physical-Technical Institute of Russian Academy of Sciences, St. Petersburg 194021 (Russian Federation); Maksimova, K. Yu.; Grunin, A. I. [Immanuel Kant Baltic Federal University, Kaliningrad 236041 (Russian Federation); Tabuchi, M. [Synchrotron Radiation Research Center, Nagoya University, Nagoya 464-8603 (Japan)

    2016-01-14

    Pulsed laser deposition has been used to grow thin (10–84 nm) epitaxial layers of Yttrium Iron Garnet Y{sub 3}Fe{sub 5}O{sub 12} (YIG) on (111)–oriented Gadolinium Gallium Garnet substrates at different growth conditions. Atomic force microscopy showed flat surface morphology both on micrometer and nanometer scales. X-ray diffraction measurements revealed that the films are coherent with the substrate in the interface plane. The interplane distance in the [111] direction was found to be by 1.2% larger than expected for YIG stoichiometric pseudomorphic film indicating presence of rhombohedral distortion in this direction. Polar Kerr effect and ferromagnetic resonance measurements showed existence of additional magnetic anisotropy, which adds to the demagnetizing field to keep magnetization vector in the film plane. The origin of the magnetic anisotropy is related to the strain in YIG films observed by XRD. Magneto-optical Kerr effect measurements revealed important role of magnetization rotation during magnetization reversal. An unusual fine structure of microwave magnetic resonance spectra has been observed in the film grown at reduced (0.5 mTorr) oxygen pressure. Surface spin wave propagation has been demonstrated in the in-plane magnetized films.

  10. Engineering the mechanical properties of ultrabarrier films grown by atomic layer deposition for the encapsulation of printed electronics

    Science.gov (United States)

    Bulusu, A.; Singh, A.; Wang, C. Y.; Dindar, A.; Fuentes-Hernandez, C.; Kim, H.; Cullen, D.; Kippelen, B.; Graham, S.

    2015-08-01

    Direct deposition of barrier films by atomic layer deposition (ALD) onto printed electronics presents a promising method for packaging devices. Films made by ALD have been shown to possess desired ultrabarrier properties, but face challenges when directly grown onto surfaces with varying composition and topography. Challenges include differing nucleation and growth rates across the surface, stress concentrations from topography and coefficient of thermal expansion mismatch, elastic constant mismatch, and particle contamination that may impact the performance of the ALD barrier. In such cases, a polymer smoothing layer may be needed to coat the surface prior to ALD barrier film deposition. We present the impact of architecture on the performance of aluminum oxide (Al2O3)/hafnium oxide (HfO2) ALD nanolaminate barrier films deposited on fluorinated polymer layer using an optical calcium (Ca) test under damp heat. It is found that with increasing polymer thickness, the barrier films with residual tensile stress are prone to cracking resulting in rapid failure of the Ca sensor at 50 °C/85% relative humidity. Inserting a SiNx layer with residual compressive stress between the polymer and ALD layers is found to prevent cracking over a range of polymer thicknesses with more than 95% of the Ca sensor remaining after 500 h of testing. These results suggest that controlling mechanical properties and film architecture play an important role in the performance of direct deposited ALD barriers.

  11. Engineering the mechanical properties of ultrabarrier films grown by atomic layer deposition for the encapsulation of printed electronics

    Energy Technology Data Exchange (ETDEWEB)

    Bulusu, A.; Singh, A.; Kim, H. [Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Wang, C. Y.; Dindar, A.; Fuentes-Hernandez, C.; Kippelen, B. [School of Electrical and Computer Engineering, Georgia Institute of Technology, and Center for Organic Photonics and Electronics, Atlanta, Georgia 30332 (United States); Cullen, D. [Oak Ridge National Laboratory, P.O. Box 2008 MS-6064, Oak Ridge, Tennessee 37831 (United States); Graham, S., E-mail: sgraham@gatech.edu [Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Oak Ridge National Laboratory, P.O. Box 2008 MS-6064, Oak Ridge, Tennessee 37831 (United States)

    2015-08-28

    Direct deposition of barrier films by atomic layer deposition (ALD) onto printed electronics presents a promising method for packaging devices. Films made by ALD have been shown to possess desired ultrabarrier properties, but face challenges when directly grown onto surfaces with varying composition and topography. Challenges include differing nucleation and growth rates across the surface, stress concentrations from topography and coefficient of thermal expansion mismatch, elastic constant mismatch, and particle contamination that may impact the performance of the ALD barrier. In such cases, a polymer smoothing layer may be needed to coat the surface prior to ALD barrier film deposition. We present the impact of architecture on the performance of aluminum oxide (Al{sub 2}O{sub 3})/hafnium oxide (HfO{sub 2}) ALD nanolaminate barrier films deposited on fluorinated polymer layer using an optical calcium (Ca) test under damp heat. It is found that with increasing polymer thickness, the barrier films with residual tensile stress are prone to cracking resulting in rapid failure of the Ca sensor at 50 °C/85% relative humidity. Inserting a SiN{sub x} layer with residual compressive stress between the polymer and ALD layers is found to prevent cracking over a range of polymer thicknesses with more than 95% of the Ca sensor remaining after 500 h of testing. These results suggest that controlling mechanical properties and film architecture play an important role in the performance of direct deposited ALD barriers.

  12. Structural and Optical Properties of ZnO Films with Different Thicknesses Grown on Sapphire by MOCVD

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    ZnO(002) films with different thicknesses, grown on Al2O3 (006) substrates by metal-organic chemical vapor deposition( MOCVD), were etched by Ar ion beams. The samples were examined by D8 X-ray diffraction, scanning electron microscopy(SEM), and photoluminescence (PL) spectrometry. The structural properties vary with the increasing thickness of the films. When the film thickness is thin, the phi(Φ) scanning curves for ZnO(103) and sapphire(116) substrate show the existence of two kinds of orientation relationships between ZnO films and sapphire,which are ZnO(002)//Al2O3 (006), ZnO(100)//Al2O3 (110) and ZnO(002)//Al2O3 (006), ZnO(110)//Al2O3(110). When the thickness increases to 500 nm there is only one orientation relationship, which is ZnO(002)//Al2O3 (006), ZnO [ 100 ]//Al2O3[ 110 ]. Their photoluminescence (PL) spectra at room temperature show that the optical properties of ZnO films have been greatly improved when increasing the thickness of films is increased.

  13. Photo- and Electrochromic Properties of Activated Reactive Evaporated MoO3 Thin Films Grown on Flexible Substrates

    Directory of Open Access Journals (Sweden)

    K. Hari Krishna

    2008-01-01

    Full Text Available The molybdenum trioxide (MoO3 thin films were grown onto ITO-coated flexible Kapton substrates using plasma assisted activated reactive evaporation technique. The film depositions were carried out at constant glow power and oxygen partial pressures of 8 W and 1×10−3 Torr, respectively. The influence of substrate temperature on the microstructural and optical properties was investigated. The MoO3 thin films prepared at a substrate temperature of 523 K were found to be composed of uniformly distributed nanosized grains with an orthorhombic structure of α-MoO3. These nanocrystalline MoO3 thin films exhibited higher optical transmittance of about 80% in the visible region with an evaluated optical band gap of 3.29 eV. With the insertion of 12.5 mC/cm2, the films exhibited an optical modulation of 40% in the visible region with coloration efficiency of 22 cm2/C at the wavelength of 550 nm. The MoO3 films deposited at 523 K demonstrated better photochromic properties and showed highest color center concentration for the irradiation time of 30 minutes at 100 mW/cm2.

  14. Magnetic and structural properties of Co{sub 2}FeAl thin films grown on Si substrate

    Energy Technology Data Exchange (ETDEWEB)

    Belmeguenai, Mohamed, E-mail: belmeguenai.mohamed@univ-paris13.fr [LSPM (CNRS-UPR 3407) 99 Avenue Jean-Baptiste Clément Université Paris 13, 93430 Villetaneuse (France); Tuzcuoglu, Hanife [LSPM (CNRS-UPR 3407) 99 Avenue Jean-Baptiste Clément Université Paris 13, 93430 Villetaneuse (France); Gabor, Mihai; Petrisor, Traian [Center for Superconductivity, Spintronics and Surface Science, Technical University of Cluj-Napoca, Street Memorandumului No. 28, RO-400114 Cluj-Napoca (Romania); Tiusan, Coriolan [Center for Superconductivity, Spintronics and Surface Science, Technical University of Cluj-Napoca, Street Memorandumului No. 28, RO-400114 Cluj-Napoca (Romania); Institut Jean Lamour, CNRS, Université de Nancy, BP 70239, F-54506 Vandoeuvre (France); Berling, Dominique [IS2M (CNRS-LRC 7228), 15 rue Jean Starcky, Université de Haute-Alsace, BP 2488, 68057 Mulhouse-Cedex (France); Zighem, Fatih; Mourad Chérif, Salim [LSPM (CNRS-UPR 3407) 99 Avenue Jean-Baptiste Clément Université Paris 13, 93430 Villetaneuse (France)

    2015-01-01

    The correlation between magnetic and structural properties of Co{sub 2}FeAl (CFA) thin films of different thicknesses (10 nmgrown at room temperature on MgO-buffered Si/SiO{sub 2} substrates and annealed at 600 °C has been studied. x-ray diffraction (XRD) measurements revealed an (011) out-of-plane textured growth of the films. The deduced lattice parameter increases with the film thickness. Moreover, pole figures showed no in-plane preferential growth orientation. The magneto-optical Kerr effect hysteresis loops showed the presence of a weak in-plane uniaxial anisotropy with a random easy axis direction. The coercive field, measured with the applied field along the easy axis direction, and the uniaxial anisotropy field increase linearly with the inverse of the CFA thickness. The microstrip line ferromagnetic resonance measurements for in-plane and perpendicular applied magnetic fields revealed that the effective magnetization and the uniaxial in-plane anisotropy field follow a linear variation versus the inverse CFA thickness. This allows deriving a perpendicular surface anisotropy coefficient of −1.86 erg/cm{sup 2}. - Highlights: • Various Co{sub 2}FeAl thin films were grown on a Si(001) substrates and annealed at 600 °C. • The thickness dependence of magnetic and structural properties has been studied. • X-ray measurements revealed an (011) out-of-plane textured growth of the films. • The easy axis coercive field varies linearly with the inverse CFA thickness. • The effective magnetization increases linearly with the inverse film thickness.

  15. Improved piezoelectricity of PVDF-HFP/carbon black composite films

    Science.gov (United States)

    Wu, Liangke; Yuan, Weifeng; Hu, Ning; Wang, Zhongchang; Chen, Chunlin; Qiu, Jianhui; Ying, Ji; Li, Yuan

    2014-04-01

    We report a substantial improvement of piezoelectricity for poly(vinylidene fluoride-hexafluoropropylene) (PVDF-HFP) copolymer films by introducing carbon black (CB) into the PVDF-HFP to form PVDF-HFP/CB composite films. The optimized output voltage of the composite film at an optimal CB content of 0.5 wt% is found to be 204% of the pristine PVDF-HFP film. Its harvested electrical power density is 464% and 561% of the pristine PVDF-HFP film by using ac and dc circuits, respectively. Through Fourier transform infrared spectroscopy analysis, differential scanning calorimetry analysis, and polarized optical microscopy observations, we clarify the enhancement mechanism of piezoelectricity for the PVDF-HFP/CB composite films. We find that the added CB acts as nucleating agent during the initial formation of crystals, but imposes an insignificant effect on the α-β phase transformation during stretching. We also demonstrate that the addition of optimal CB reduces crystal size yet increases the number of crystals in the composite films. This is beneficial for the formation of elongated, oriented and fibrillar crystalline morphology during stretching and consequently results in a highly efficient poling process. The addition of overdosed CB leads to the formation of undersized crystals, lowered crystallinity, and hence reduced piezoelectric performance of the PVDF-HFP/CB composite films.

  16. A review of fabrication and applications of carbon nanotube film-based flexible electronics

    Science.gov (United States)

    Park, Steve; Vosguerichian, Michael; Bao, Zhenan

    2013-02-01

    Flexible electronics offer a wide-variety of applications such as flexible circuits, flexible displays, flexible solar cells, skin-like pressure sensors, and conformable RFID tags. Carbon nanotubes (CNTs) are a promising material for flexible electronics, both as the channel material in field-effect transistors (FETs) and as transparent electrodes, due to their high intrinsic carrier mobility, conductivity, and mechanical flexibility. In this feature article, we review the recent progress of CNTs in flexible electronics by describing both the processing and the applications of CNT-based flexible devices. To employ CNTs as the channel material in FETs, single-walled carbon nanotubes (SWNTs) are used. There are generally two methods of depositing SWNTs on flexible substrates--transferring CVD-grown SWNTs or solution-depositing SWNTs. Since CVD-grown SWNTs can be highly aligned, they often outperform solution-processed SWNT films that are typically in the form of random network. However, solution-based SWNTs can be printed at a large-scale and at low-cost, rendering them more appropriate for manufacturing. In either case, the removal of metallic SWNTs in an effective and a scalable manner is critical, which must still be developed and optimized. Nevertheless, promising results demonstrating SWNT-based flexible circuits, displays, RF-devices, and biochemical sensors have been reported by various research groups, proving insight into the exciting possibilities of SWNT-based FETs. In using carbon nanotubes as transparent electrodes (TEs), two main strategies have been implemented to fabricate highly conductive, transparent, and mechanically compliant films--superaligned films of CNTs drawn from vertically grown CNT forests using the ``dry-drawing'' technique and the deposition or embedding of CNTs onto flexible or stretchable substrates. The main challenge for CNT based TEs is to fabricate films that are both highly conductive and transparent. These CNT based TEs have

  17. Novel metal-carbon(60) nanocrystalline magnetic thin films

    Science.gov (United States)

    Zheng, Lingyi

    1999-11-01

    A novel type of nanocrystalline magnetic thin films consisting of ferromagnetic metals and C60 have been developed and investigated. CO-C 60, Fe-C60 and CoFe-C60 with different concentrations of C60 thin films have been manufactured by thermal vapor codeposition. The microstructures and magnetic properties of the films can be significantly enhanced by varying the concentrations of C60 in the films. The stability of C60 and the compatibility of C60 with the metallic matrices are confirmed by mass spectrometry, Raman, WDS, XRD and TEM. Strong metal- C60 interaction is indicated by higher desorption temperatures of C60 in the meta- C60 films than that in pure C60 and the peak shift in Raman spectra. TEM shows that the grain size of the matrix metal decreases proportionally with increasing C60 concentration. Nanosize uniform columnar grains with nanoscale dispersion of C60 on the grain boundaries are commonly observed in the metal-C60 films. A self- assembly grain growth model based on the size effect of C60 and the metal-C60 interaction is proposed to delineate the microstructural evolution by C60. Calculations based on this model are consistent with experimental observations and give a grain size vs. C60 (carbon) concentration relationship. Grain growth retardation by C60 is observed in a CO-C60 film. Out-plane magnetic remanence and coercivity are enhanced in both the CO-C60 and Fe-C60 films. In the in-plane direction, the coercivity deceases in CO- C60 films but increases slightly in Fe- C60 films with increasing C60 concentrations. In-plane magnetic anisotropy is detected in CO-C60 films but not in Fe-C60 films. Strong temperature-dependent magnetization remanence and saturation are found in both the Co- C60 and Fe-C60 films with high C60 concentrations due to the nanosize grain effects. Temperature effects on the coercivity of CO- C60 and Fe-C60 are different and determined by the intrinsic magnetocrystalline anisotropy energy. Coercivity of the CoFe-C60 films

  18. Carbon dioxide and water exchange of a soybean stand grown in the biomass production chamber

    Science.gov (United States)

    Corey, Kenneth A.

    1990-01-01

    Soybean plants were grown under metal halide lamps in NASA's biomass production chamber (BPC). Experiments were conducted to determine whole stand rates of carbon dioxide exchange and transpiration as influenced by time of day, CO2 concentration, irradiance, and temperature. Plants were grown at a population of 24 plants/sq m, a daily cycle of 12 hr light/12 hr dark, and average temperature regime of 26 C light/20 C dark, and a CO2 concentration enriched and maintained at 1000 ppm during the photoperiod. A distinct diurnal pattern in the rate of stand transpiration was measured at both ambient and enriched (1000 ppm) concentration of CO2. Data generated in this study represent true whole stand responses to key developmental and environmental variables and will be valuable in database construction for future working CELSS. Crop growth studies in the BPC were conducted with a high degree of environmental control, gas tightness during growth, and have used large plant stands. These characteristics have placed it in a unique position internationally as a research tool and as a preprototype subcomponent to a fully integrated CELSS. The results from the experiments are presented.

  19. Greater osteoblast functions on multiwalled carbon nanotubes grown from anodized nanotubular titanium for orthopedic applications

    Science.gov (United States)

    Sirivisoot, Sirinrath; Yao, Chang; Xiao, Xingcheng; Sheldon, Brian W.; Webster, Thomas J.

    2007-09-01

    Titanium (Ti) is the most widely implanted orthopedic material. However, current formulations of Ti have an average orthopedic implant functional lifetime of only 10-15 years. While there are many reasons why orthopedic implants fail, one is a lack of initial and sustained integration into juxtaposed bone. To improve the cytocompatibility properties of Ti for orthopedic applications, parallel multiwalled carbon nanotubes (CNTs) were grown from the pores of anodized nanotubular Ti by a chemical vapor deposition process in the present study. The results of this study provided evidence, for the first time, that osteoblast (bone forming cell) functions (specifically, alkaline phosphatase activity and calcium deposition) were significantly greater on CNTs grown from anodized Ti than on anodized Ti without CNTs and currently-used Ti in orthopedics for up to 21 days. In summary, this study showed that bone growth could possibly be enhanced on currently-used Ti implants with protruding CNTs and, thus, they should be further studied for orthopedic applications.

  20. Electrocatalytic activity of Pt grown by ALD on carbon nanotubes for Si-based DMFC applications

    DEFF Research Database (Denmark)

    Johansson, Alicia Charlotte; Dalslet, Bjarke Thomas; Yang, R.B.

    2012-01-01

    We present an anode design for silicon-based direct methanol fuel cell (DMFC) applications. Platinum was deposited conformally by atomic layer deposition (ALD) onto vertically aligned, nitrogendoped multi-walled carbon nanotubes (MWCNTs) grown on porous silicon. The deposition was carried out...... that ALD could be a MEMS compatible deposition technique for Si-based fuel cell applications. © The Electrochemical Society....... in a top-flow ALD reactor at 250°C, using MeCpPtMe3 and O2 as precursors. The anode was tested for the methanol oxidation reaction (MOR) in a three-electrode electrochemical set-up and it showed improved catalytic activity compared to a reference sample of Pt deposited on flat Si. It is demonstrated...

  1. Fracture Toughness of Vapor Grown Carbon Nanofiber-Reinforced Polyethylene Composites

    Directory of Open Access Journals (Sweden)

    A. R. Adhikari

    2009-01-01

    Full Text Available The impact fracture behavior of a vapor grown carbon nanofiber (VGCNF reinforced high-density polyethylene (PE composite was evaluated. The samples consisting of pure PE and composites with 10 wt% and 20 wt% of VGCNFs were prepared by a combination of hot-pressing and extrusion methods. Extrusion was used to produce samples with substantially different shear histories. The fracture behavior of these samples was analyzed using the essential work of fracture (EWF approach. The results showed an increase of 292% in the essential work of fracture for the loading of 10 wt%. Further increasing fiber loading to 20 wt% caused the essential work of fracture to increase only 193% with respect to the unmodified material. Evaluation of the fracture surface morphology indicated that the fibril frequency and microvoid size within the various fiber loadings depended strongly on processing conditions.

  2. Capacitive humidity sensing properties of carbon nanotubes grown on silicon nanoporous pillar array

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    Multi-walled carbon nanotubes (CNTs) were grown on silicon nanoporous pillar array (Si-NPA) by thermal chemical vapor deposition method, and the structural and capacitive humidity sensing properties of CNT/Si-NPA were studied. It was found that with the relative humidity (RH) changing from 11% to 95%, a device re-sponse of ~480% was achieved at the frequency of 50000 Hz, and a linear device response curve could be obtained by adopting longitudinal logarithmic coordinate. The response/recovery times were measured to be ~20 s and ~10 s, respectively, which indicated a rather fast response/recovery rate. The adsorption-desorption dynamic cycle experiments demonstrated the high measurement reproducibility of CNT/Si-NPA sensors. These excellent performances were attributed to the unique surface structure, morphology and chemical inertness of CNT/Si-NPA.

  3. Capacitive humidity sensing properties of carbon nanotubes grown on silicon nanoporous pillar array

    Institute of Scientific and Technical Information of China (English)

    JIANG WeiFen; XIAO ShunHua; ZHANG HuanYun; DONG YongFen; LI XinJian

    2007-01-01

    Multi-walled carbon nanotubes (CNTs) were grown on silicon nanoporous pillar array (Si-NPA) by thermal chemical vapor deposition method, and the structural and capacitive humidity sensing properties of CNT/Si-NPA were studied. It was found that with the relative humidity (RH) changing from 11% to 95%, a device response of ~480% was achieved at the frequency of 50000 Hz, and a linear device response curve could be obtained by adopting longitudinal logarithmic coordinate. The response/recovery times were measured to be ~20 s and ~10 s, respectively, which indicated a rather fast response/recovery rate. The adsorption-desorption dynamic cycle experiments demonstrated the high measurement reproducibility of CNT/Si-NPA sensors. These excellent performances were attributed to the unique surface structure, morphology and chemical inertness of CNT/Si-NPA.

  4. Reactive Bonding Film for Bonding Carbon Foam Through Metal Extrusion

    CERN Document Server

    Chertok, Maxwell; Irving, Michael; Neher, Christian; Tripathi, Mani; Wang, Ruby; Zheng, Gayle

    2016-01-01

    Future tracking detectors, such as those under development for the High Luminosity LHC, will require mechanical structures employing novel materials to reduce mass while providing excellent strength, thermal conductivity, and radiation tolerance. Adhesion methods for such materials are under study at present. This paper demonstrates the use of reactive bonding film as an adhesion method for bonding carbon foam.

  5. Flexible diamond-like carbon film coated on rubber

    NARCIS (Netherlands)

    Pei, Y.T.; Bui, X.L.; Pal, J.P. van der; Martinez-Martinez, D.; Hosson, J.Th.M. De

    2013-01-01

    Dynamic rubber seals are major sources of friction of lubrication systems and bearings, which may take up to 70% of the total friction. The solution we present is to coat rubbers with diamond-like carbon (DLC) thin films by which the coefficient of friction is reduced to less than one tenth. Coating

  6. Plasma-enhanced Deposition of Nano-Structured Carbon Films

    Institute of Scientific and Technical Information of China (English)

    Yang Qiaoqin (杨巧勤); Xiao Chijin (肖持进); A. Hirose

    2005-01-01

    By pre-treating substrate with different methods and patterning the catalyst, selective and patterned growth of diamond and graphitic nano-structured carbon films have been realized through DC Plasma-Enhanced Hot Filament Chemical Vapor Deposition (PE-HFCVD).Through two-step processing in an HFCVD reactor, novel nano-structured composite diamond films containing a nanocrystalline diamond layer on the top of a nanocone diamond layer have been synthesized. Well-aligned carbon nanotubes, diamond and graphitic carbon nanocones with controllable alignment orientations have been synthesized by using PE-HFCVD. The orientation of the nanostructures can be controlled by adjusting the working pressure. In a Microwave Plasma Enhanced Chemical Vapor Deposition (MW-PECVD) reactor, high-quality diamond films have been synthesized at low temperatures (310 ℃~550 ℃) without adding oxygen or halogen gas in a newly developed processing technique. In this process, carbon source originates from graphite etching, instead of hydrocarbon. The lowest growth temperature for the growth of nanocrystalline diamond films with a reasonable growth rate without addition of oxygen or halogen is 260 ℃.

  7. Scattering of terahertz radiation from oriented carbon nanotube films

    DEFF Research Database (Denmark)

    Eichhorn, Finn; Jepsen, Peter Uhd; Schroeder, Nicholas;

    2009-01-01

    Session title: IThC-THz Interactions with Condensed Matter. We report on the use of terahertz time-domain spectroscopy to measure scattering from multi-walled carbon nanotubes aligned normal to the film plane. Measurements indicate scattering from the nanotubes is significantly stronger than...

  8. Electrochemiluminescent Properties of Organic Films with Incorporated Carbon Nanotubes

    Directory of Open Access Journals (Sweden)

    Yu.T. Zholudov

    2012-06-01

    Full Text Available This work describes the study of the electrochemical and electrochemiluminescent properties of electrodes modified by films of polyvinyl alcohol containing luminophor tris-bipyridine ruthenium and carbon nanotubes. Studied electrode structures showed good applicability for the development of nanotechnological ECL-sensors intended for the assay in aqueous mediums.

  9. Improved thermoplastic composite by alignment of vapor-grown carbon fiber

    Science.gov (United States)

    Kuriger, Rex Jerrald

    2000-10-01

    Vapor grown carbon fiber (VGCF) is a new and inexpensive carbon fiber produced by vapor deposition of hydrocarbons on metal catalysts. Unlike continuous conventional PAN or pitch-derived carbon fibers, VGCF is discontinuous with diameters of about 200 nanometers and lengths ranging from 10 to 200 micrometers. The microscopic size and random entanglement of the fibers create several problems when processing VGCF composites. It is particularly difficult to disperse the entangled fibers in the matrix and orient them along a preferred axis to provide directional reinforcement. This work introduces a technique to produce an improved polymeric composite by alignment of vapor grown carbon nano-fibers in a polypropylene matrix. A twin-screw extruder was used to shear mix and disperse the fibers in the polymer matrix. The composite mixtures were extruded through a converging-annular die that generates flow-induced fiber alignment along the extrusion direction. The effect that the various extrusion conditions have on the bulk properties of the extrudate was investigated. It was found that the extrusion process is strongly dependent on the fiber content of the composite. The extrusion pressure increased and the flow rate decreased with fiber volume fraction. The tensile strength and modulus for the composite samples varied with extrusion temperature and screw speed, and the void content increased with fiber volume fraction. It was shown that fiber alignment could be improved by increasing the residence time in the die channel and was verified using x-ray diffraction. The mechanical properties of the aligned samples increased with fiber content. Also, the tensile strength improved with greater fiber orientation; however, more fiber alignment had little affect on the modulus. To better predict the strength of these partially aligned fiber composites, an experimental and theoretical approach was introduced. The experimental data correspond reasonably well when compared with the

  10. High conductivity transparent carbon nanotube films deposited from superacid

    Energy Technology Data Exchange (ETDEWEB)

    Hecht, David S; Lee, Roland; Hu Liangbing [Unidym Incorporated, 1244 Reamwood Drive, Sunnyvale, CA 94089 (United States); Heintz, Amy M; Moore, Bryon; Cucksey, Chad; Risser, Steven, E-mail: dhecht@gmail.com [Battelle, 505 King Avenue, Columbus, OH 43201 (United States)

    2011-02-18

    Carbon nanotubes (CNTs) were deposited from a chlorosulfonic superacid solution onto PET substrates by a filtration/transfer method. The sheet resistance and transmission (at 550 nm) of the films were 60 {Omega}/sq and 90.9% respectively, which corresponds to a DC conductivity of 12 825 S cm{sup -1} and a DC/optical conductivity ratio of 64.1. This is the highest DC conductivity reported for CNT thin films to date, and attributed to both the high quality of the CNT material and the exfoliation/doping by the superacid. This work demonstrates that CNT transparent films have not reached the conductivity limit; continued improvements will enable these films to be used as the transparent electrode for applications in solid state lighting, LCD displays, touch panels, and photovoltaics.

  11. High conductivity transparent carbon nanotube films deposited from superacid.

    Science.gov (United States)

    Hecht, David S; Heintz, Amy M; Lee, Roland; Hu, Liangbing; Moore, Bryon; Cucksey, Chad; Risser, Steven

    2011-02-18

    Carbon nanotubes (CNTs) were deposited from a chlorosulfonic superacid solution onto PET substrates by a filtration/transfer method. The sheet resistance and transmission (at 550 nm) of the films were 60 Ω/sq and 90.9% respectively, which corresponds to a DC conductivity of 12,825 S cm(-1) and a DC/optical conductivity ratio of 64.1. This is the highest DC conductivity reported for CNT thin films to date, and attributed to both the high quality of the CNT material and the exfoliation/doping by the superacid. This work demonstrates that CNT transparent films have not reached the conductivity limit; continued improvements will enable these films to be used as the transparent electrode for applications in solid state lighting, LCD displays, touch panels, and photovoltaics.

  12. Perpendicular magnetic anisotropy of Au/FePt thin films grown on Si substrates

    CERN Document Server

    Lee, Y W; Kim, C O

    1999-01-01

    FePt thin films show in plane magnetism with a very large coercive force when they are deposited on lattice-mismatched substrates, such as glass or Si In our research, FePt alloy thin films were deposited, using the coevaporation method, on a Au buffer layer which was evaporated onto a Si substrate at 500 .deg. C. The magnetic easy axis of the FePt film changed from the in-plane direction to the normal direction of the film. Therefore, it can be said that a Au buffer layer can enhance the perpendicular magnetic anisotropy of a FePt thin film on a lattice-mismatched substrate.

  13. Strength and Fracture Resistance of Amorphous Diamond-Like Carbon Films for MEMS

    Directory of Open Access Journals (Sweden)

    K. N. Jonnalagadda

    2009-01-01

    Full Text Available The mechanical strength and mixed mode I/II fracture toughness of hydrogen-free tetrahedral amorphous diamond-like carbon (ta-C films, grown by pulsed laser deposition, are discussed in connection to material flaws and its microstructure. The failure properties of ta-C were obtained from films with thicknesses 0.5–3 μm and specimen widths 10–20 μm. The smallest test samples with 10 μm gage section averaged a strength of 7.3 ± 1.2 GPa, while the strength of 20-μm specimens with thicknesses 0.5–3 μm varied between 2.2–5.7 GPa. The scaling of the mechanical strength with specimen thickness and dimensions was owed to deposition-induced surface flaws, and, only in the smallest specimens, RIE patterning generated specimen sidewall flaws. The mode I fracture toughness of ta-C films is KIc=4.4±0.4 MPam, while the results from mixed mode I/II fracture experiments with cracks arbitrarily oriented in the plane of the film compared very well with theoretical predictions.

  14. Carbon Nanotubes for Thin Film Transistor: Fabrication, Properties, and Applications

    Directory of Open Access Journals (Sweden)

    Yucui Wu

    2013-01-01

    Full Text Available We review the present status of single-walled carbon nanotubes (SWCNTs for their production and purification technologies, as well as the fabrication and properties of single-walled carbon nanotube thin film transistors (SWCNT-TFTs. The most popular SWCNT growth method is chemical vapor deposition (CVD, including plasma-enhanced chemical vapor deposition (PECVD, floating catalyst chemical vapor deposition (FCCVD, and thermal CVD. Carbon nanotubes (CNTs used to fabricate thin film transistors are sorted by electrical breakdown, density gradient ultracentrifugation, or gel-based separation. The technologies of applying CNT random networks to work as the channels of SWCNT-TFTs are also reviewed. Excellent work from global researchers has been benchmarked and analyzed. The unique properties of SWCNT-TFTs have been reviewed. Besides, the promising applications of SWCNT-TFTs have been explored. Finally, the key issues to be solved in future have been summarized.

  15. Preparation and properties of CdS thin films grown by ILGAR method

    Institute of Scientific and Technical Information of China (English)

    QIU Jijun; JIN Zhengguo; WU Weibing; LIU Xiaoxin; CHENG Zhijie

    2004-01-01

    CdS thin films were deposited by the ion layer gas reaction (ILGAR) method. Structural, chemical, topographical development as well as optical and electrical properties of as-deposited and annealed thin films were investigated by XRD,SEM, XPS, AFM and UV-VIS. The results showed that the thin films are uniform, compact and good in adhesion to the substrates, and the growth of the films is 2.8 nm/cycle. The evolution of structure undergoes from the cubic structure to the hexagonal one with a preferred orientation along the (002) plane after annealing at 673 K. An amount of C, O and Cl impuriries can be reduced by increasing the drying temperature or by annealing in N2 atmosphere. It was found that the band gap of the CdS films shifts to higher wavelength after annealing or increasing film thickness. The electrical resistivity decreases with increasing annealing temperature and film thickness.

  16. Cw and time-resolved spectroscopy in homoepitaxial GaN films and GaN-GaAlN quantum wells grown by molecular beam epitaxy.

    OpenAIRE

    Taliercio, Thierry; Gallart, Mathieu; Lefebvre, Pierre; Morel, Aurélien; Gil, Bernard; Allègre, Jacques; Grandjean, Nicolas; Massies, Jean; Grzegory, Izabella; Porowsky, Sylvester

    2001-01-01

    International audience; We have grown GaN films and GaN–AlGaN quantum wells (QWs) on homoepitaxial substrates, by molecular beam epitaxy using ammonia. Both the GaN film and the QW are found to have superior excitonic recombination properties which are extremely promising for the development of indium free ultra-violet lasers based on nitrides.

  17. Electrical and physicochemical properties of atomic-layer-deposited HfO{sub 2} film on Si substrate with interfacial layer grown by nitric acid oxidation

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Seung Hyun [Department of Advanced Materials Engineering, Hanyang University, Ansan 15588 (Korea, Republic of); Seok, Tae Jun; Jin, Hyun Soo [Department of Materials Science & Chemical Engineering, Hanyang University, Ansan 15588 (Korea, Republic of); Kim, Woo-Byoung, E-mail: woo7838@dankook.ac.kr [Department of Energy Engineering, Dankook University, Cheonan 330-714 (Korea, Republic of); Park, Tae Joo, E-mail: tjp@hanyang.ac.kr [Department of Advanced Materials Engineering, Hanyang University, Ansan 15588 (Korea, Republic of); Department of Materials Science & Chemical Engineering, Hanyang University, Ansan 15588 (Korea, Republic of)

    2016-03-01

    Graphical abstract: - Highlights: • Ultrathin SiO{sub 2} interfacial layers grown using nitric acid oxidation and O{sub 3} oxidation were adopted at the interface of HfO{sub 2}/Si. • Higher physical density of interfacial layer grown using nitric acid oxidation resulted in the suppressed Si diffusion from substrate into the film. • The interface properties as well as permittivity of the film were improved by adoption of interfacial layer grown using nitric acid oxidation. - Abstract: The ultrathin SiO{sub 2} interfacial layer (IL) was adopted at the interface between atomic-layer-deposited HfO{sub 2} gate dielectric film and a Si substrate, which was grown using nitric acid oxidation (NAO) and O{sub 3} oxidation (OZO) prior to HfO{sub 2} film deposition. X-ray photoelectron spectroscopy result revealed that Si diffusion from the substrate into the film was suppressed for the film with NAO compared to that with OZO, which was attributed to the higher physical density of IL. The electrical measurement using metal–insulator–semiconductor devices showed that the film with NAO exhibited higher effective permittivity and lower densities of fixed charge and slow state at the interface. Furthermore, the leakage current density at an equivalent electrical thickness was lower for the film with NAO than OZO.

  18. The effects of thermal annealing on the structure and the electrical transport properties of ultrathin gadolinia-doped ceria films grown by pulsed laser deposition

    DEFF Research Database (Denmark)

    Rodrigo, Katarzyna Agnieszka; Heiroth, S.; Pryds, Nini;

    2011-01-01

    Ultrathin crystalline films of 10 mol% gadolinia-doped ceria (CGO10) are grown on MgO (100) substrates by pulsed laser deposition at a moderate temperature of 400°C. As-deposited CGO10 layers of approximately 4 nm, 14 nm, and 22 nm thickness consist of fine grains with dimensions ≤∼11 nm. The films...

  19. Structural properties of strained YBa2Cu3O6+x superconducting films grown by pulsed laser deposition

    Science.gov (United States)

    Ariosa, Daniel; Abrecht, M.; Pavuna, Davor; Onellion, Marshall

    2000-09-01

    In YBa2Cu3O6+x compound the tetragonal to orthorhombic transition occurs around x equals 0.3, followed by a continuum variation of lattice parameters. Hence both, the structural and superconducting properties, depend upon the oxygen content in CuO chains. Conversely, the epitaxial stress, exerted by the substrate on YBCO films, modified the lattice parameters influencing the oxygen stability in the chains. The understanding of this mechanism is essential when growing epitaxial films for in- situ photoemission studies as well as for tunneling experiments, since the oxygen stability up to the top surface unit-cell is a central issue. We have studied this effect on c-axis oriented YBCO films grown by laser ablation on (001) STO single crystals. Accurate x-ray diffraction analysis of thick films (t GRT 500 angstrom) indicates the presence of two distinct layers, one strained and the other relaxed. Detailed analysis shows that the relaxed layer is as well oxidized as bulk samples, while the strained one is oxygen deficient. Furthermore, despite an oxygen content of about x equals 0.65, the strained layer is in the tetragonal phase (in bulk, the tetragonal phase exists for x < 0.3). We discuss these results in terms of competition between the chemical pressure induced by oxygen inclusion in the chains, and the uniaxial stress within the film.

  20. Structural, Optical Constants and Photoluminescence of ZnO Thin Films Grown by Sol-Gel Spin Coating

    Directory of Open Access Journals (Sweden)

    Abdel-Sattar Gadallah

    2013-01-01

    Full Text Available We report manufacturing and characterization of low cost ZnO thin films grown on glass substrates by sol-gel spin coating method. For structural properties, X-ray diffraction measurements have been utilized for evaluating the dominant orientation of the thin films. For optical properties, reflectance and transmittance spectrophotometric measurements have been done in the spectral range from 350 nm to 2000 nm. The transmittance of the prepared thin films is 92.4% and 88.4%. Determination of the optical constants such as refractive index, absorption coefficient, and dielectric constant in this wavelength range has been evaluated. Further, normal dispersion of the refractive index has been analyzed in terms of single oscillator model of free carrier absorption to estimate the dispersion and oscillation energy. The lattice dielectric constant and the ratio of free carrier concentration to free carrier effective mass have been determined. Moreover, photoluminescence measurements of the thin films in the spectral range from 350 nm to 900 nm have been presented. Electrical measurements for resistivity evaluation of the films have been done. An analysis in terms of order-disorder of the material has been presented to provide more consistency in the results.

  1. Thickness-Dependent Properties of YBCO Films Grown on GZO/CLO-Buffered NiW Substrates

    Science.gov (United States)

    Malmivirta, M.; Huhtinen, H.; Zhao, Y.; Grivel, J.-C.; Paturi, P.

    2017-01-01

    To study the role of novel Gd_2Zr_2O_7/Ce_{0.9}La_{0.1}O_2 buffer layer structure on a biaxially textured NiW substrate, a set of YBa_2Cu_3O_{7-δ } (YBCO) films with different thicknesses were prepared by pulsed laser deposition (PLD). Interface imperfections as well as thickness-dependent structural properties were observed in the YBCO thin films. The structure is also reflected into the improved superconducting properties with the highest critical current densities in films with intermediate thicknesses. Therefore, it can be concluded that the existing buffer layers need more optimization before they can be successfully used for films with various thicknesses. This issue is linked to the extremely susceptible growth method of PLD when compared to the commonly used chemical deposition methods. Nevertheless, PLD-grown films can give a hint on what to concentrate to be able to further improve the buffer layer structures for future coated conductor technologies.

  2. Superconducting properties of very high quality NbN thin films grown by high temperature chemical vapor deposition

    Science.gov (United States)

    Hazra, D.; Tsavdaris, N.; Jebari, S.; Grimm, A.; Blanchet, F.; Mercier, F.; Blanquet, E.; Chapelier, C.; Hofheinz, M.

    2016-10-01

    Niobium nitride (NbN) is widely used in high-frequency superconducting electronics circuits because it has one of the highest superconducting transition temperatures ({T}{{c}}˜ 16.5 {{K}}) and largest gap among conventional superconductors. In its thin-film form, the T c of NbN is very sensitive to growth conditions and it still remains a challenge to grow NbN thin films (below 50 nm) with high T c. Here, we report on the superconducting properties of NbN thin films grown by high-temperature chemical vapor deposition (HTCVD). Transport measurements reveal significantly lower disorder than previously reported, characterized by a Ioffe-Regel parameter ({k}{{F}}{\\ell }) ˜ 12. Accordingly we observe {T}{{c}}˜ 17.06 {{K}} (point of 50% of normal state resistance), the highest value reported so far for films of thickness 50 nm or less, indicating that HTCVD could be particularly useful for growing high quality NbN thin films.

  3. Optical and electrical properties of high-quality Ti2O3 epitaxial film grown on sapphire substrate

    Science.gov (United States)

    Fan, Haibo; Wang, Mingzi; Yang, Zhou; Ren, Xianpei; Yin, Mingli; Liu, Shengzhong

    2016-11-01

    Epitaxial film of Ti2O3 with high crystalline quality was grown on Al2O3 substrate by pulsed laser deposition process using a powder-pressed TiO2 target in active O2 flow. X-ray diffraction clearly reveals the (0006) crystalline Ti2O3 orientation and its (10overline{1} 0)_{{{{Ti}}_{ 2} {{O}}_{ 3} }} ||(10overline{1} 0)_{{sapphire}} in-plane epitaxial relationship with the substrate. Scanning electron microscopy images show that the film grew uniformly on the substrate with a Volmer-Weber mode. High-resolution transmission electron microscopy and selected area electron diffraction further confirm the high crystalline quality of the film. Transmittance spectrum shows that the Ti2O3 film is highly transparent in 400-800 nm with the optical band gap estimated to be 3.53 eV by Tauc plot. The temperature-dependent Hall effect measurement indicates that the Ti2O3 film appears to be n-type semiconductor with carrier concentration, mobility, and resistivity showing typical temperature-dependent behavior. The donor ionization energy was estimated to be 83.6 meV by linear relationship of conductivity versus temperature.

  4. Influence of an External Magnetic Field on the Growth of Nanocrystalline Silicon Films Grown by MF Magnetron Sputtering

    Institute of Scientific and Technical Information of China (English)

    Junhua Gao; Lin Zhang; Jinquan Xiao; Jun Gong; Chao Sun; Lishi Wen

    2012-01-01

    The effects of an external magnetic field originating from two solenoid coils on the magnetic field configuration, plasma state of a dual unbalanced magnetron sputter system and the structure of nanocrystalline Si films were examined. Numerical simulations of the magnetic field configuration showed that increasing the coil current significantly changed the magnetic field distribution between the substrate and targets. The saturated ion current density Ji in the substrate position measured by using a circular flat probe increased from 0.18 to 0.55 mA/cm2 with the coil current ranging from 0 to 6 A. X-ray diffraction and Raman results revealed that increasing the ion density near the substrate would benefit crystallization of films and the preferential growth along [lI1] orientation. From analysis of the surface morphology and the microstructure of Si films grown under different plasma conditions, it is found that with increasing the Ji, the surface of the film was smoothed and the alteration in the surface roughness was mainly correlated to the localized surface diffusion of the deposited species and the crystallization behavior of the films.

  5. STUDY OF RAY IRRADIATION ON DIAMOND-LIKE CARBON FILMS

    Institute of Scientific and Technical Information of China (English)

    G.A.Liu; T.M.Wang; E.Q.Xie

    2002-01-01

    Diamond-like carbon (DLC) films have been deposited on glass substrates using radio-frequency (rf) plasma deposition method, γ-ray, ultraviolet (UV) ray were used toirradiate the DLC films. Raman spectroscopy and infrared (IR) spectroscopy were usedto characterize the changing characteristics of SP3 C-H bond and hydrogen content inthe films due to the irradiations. The results show that, the damage degrees induced bythe UV ray on the SP3 C-H bonds are much stronger than that by the γ-ray. When theirradiation dose of γ-ray reaches 10× 104Gy, the SP3 C-H bond reduces about 50% innumber. The square electrical resistance of the films is reduced due to the irradiationof UV ray and this is caused by severe oxidation of the films. By using the results onoptical gap of the films and the fully constrained network theory, the hydrogen contentin the as-deposited films is estimated to be 10-25at.%.

  6. Nanotribological performance of fullerene-like carbon nitride films

    Energy Technology Data Exchange (ETDEWEB)

    Flores-Ruiz, Francisco Javier; Enriquez-Flores, Christian Ivan [Centro de Investigación y Estudios Avanzados (CINVESTAV) IPN, Unidad Querétaro, Lib. Norponiente 2000, Real de Juriquilla, C.P. 76230, Querétaro, Qro., México (Mexico); Chiñas-Castillo, Fernando, E-mail: fernandochinas@gmail.com [Department of Mechanical Engineering, Instituto Tecnológico de Oaxaca, Oaxaca, Oax. Calz. Tecnológico No. 125, CP. 68030, Oaxaca, Oax. (Mexico); Espinoza-Beltrán, Francisco Javier [Centro de Investigación y Estudios Avanzados (CINVESTAV) IPN, Unidad Querétaro, Lib. Norponiente 2000, Real de Juriquilla, C.P. 76230, Querétaro, Qro., México (Mexico)

    2014-09-30

    Highlights: • Fullerene-like CNx samples show an elastic recovery of 92.5% and 94.5% while amorphous CNx samples had only 75% elastic recovery. • Fullerene-like CNx films show an increment of 34.86% and 50.57% in fractions of C 1s and N 1s. • Fullerene-like CNx samples show a lower friction coefficient compared to amorphous CNx samples. • Friction reduction characteristics of fullerene-like CNx films are strongly related to the increase of sp{sup 3} CN bonds. - Abstract: Fullerene-like carbon nitride films exhibit high elastic modulus and low friction coefficient. In this study, thin CNx films were deposited on silicon substrate by DC magnetron sputtering and the tribological behavior at nanoscale was evaluated using an atomic force microscope. Results show that CNx films with fullerene-like structure have a friction coefficient (CoF ∼ 0.009–0.022) that is lower than amorphous CNx films (CoF ∼ 0.028–0.032). Analysis of specimens characterized by X-ray photoelectron spectroscopy shows that films with fullerene-like structure have a higher number of sp{sup 3} CN bonds and exhibit the best mechanical properties with high values of elastic modulus (E > 180 GPa) and hardness (H > 20 GPa). The elastic recovery determined on specimens with a fullerene-like CNx structure was of 95% while specimens of amorphous CNx structure had only 75% elastic recovery.

  7. Magnetic and Optical Properties of the TiO2-Co-TiO2 Composite Films Grown by Magnetron Sputtering

    Institute of Scientific and Technical Information of China (English)

    LIU Fa-min; DING Peng; SHI Wei-mei; WANG Tian-min

    2007-01-01

    The TiO2-Co-TiO2 sandwich films were successfully grown on glass and silicon substrata making alternate use of radio frequency reactive magnetron sputtering and direct current magnetron sputtering. The structures and properties of these films were identified with X-ray diffraction (XRD), Raman spectra and X-ray photoemission spectra (XPS). It is shown that the sandwich film consists of two anatase TiO2 films with an embedded Co nano-film. The fact that, when the Co nano-film thickens, varied red shifts appear in optical absorption spectra may well be explained by the quantum confinement and tunnel effects. As for magnetic properties, the saturation magnetization, remnant magnetic induction and coercivity vary with the thickness of the Co nano-films. Moreover, the Co nano-film has a critical thickness of about 8.6 nm, which makes the coercivity of the composite film reach the maximum of about 1413 Oe.

  8. High-quality β-Ga2O3 single crystals grown by edge-defined film-fed growth

    Science.gov (United States)

    Kuramata, Akito; Koshi, Kimiyoshi; Watanabe, Shinya; Yamaoka, Yu; Masui, Takekazu; Yamakoshi, Shigenobu

    2016-12-01

    β-Ga2O3 bulk crystals were grown by the edge-defined film-fed growth (EFG) process and the floating zone process. Semiconductor substrates containing no twin boundaries with sizes up to 4 in. in diameter were fabricated. It was found that Si was the main residual impurity in the EFG-grown crystals and that the effective donor concentration (N d - N a) of unintentionally doped crystals was governed by the Si concentration. Intentional n-type doping was shown to be possible. An etch pit observation revealed that the dislocation density was on the order of 103 cm-3. N d - N a for the samples annealed in nitrogen ambient was almost the same as the Si concentration, while for the samples annealed in oxygen ambient, it was around 1 × 1017 cm-3 and independent of the Si concentration.

  9. Microstructural and conductivity comparison of Ag films grown on amorphous TiO2 and polycrystalline ZnO

    Energy Technology Data Exchange (ETDEWEB)

    Dannenberg, Rand; Stach, Eric; Glenn, Darin; Sieck, Peter; Hukari, Kyle

    2001-03-26

    8 nm thick Ag films were sputter deposited onto amorphous TiO{sub 2} underlayers 25 nm thick, and also amorphous TiO{sub 2} (25 nm)/ZnO (5 nm) multiunderlayers. The substrates were back-etched Si with a 50 nm thick LPCVD Si{sub 3}N{sub 4} electron transparent membrane. The ZnO, sputtered onto amorphous TiO{sub 2}, formed a continuous layer with a grain size of 5 nm in diameter, on the order of the film thickness. There are several microstructural differences in the Ag dependent on the underlayers, revealed by TEM. First a strong {l_brace}0001{r_brace} ZnO to {l_brace}111{r_brace} Ag fibre-texture relationship exists. On TiO{sub 2} the Ag microstructure shows many abnormal grains whose average diameter is about 60-80 nm, whereas the films on ZnO show few abnormal grains. The background matrix of normal grains on the TiO{sub 2} is roughly 15 nm, while the normal grain size on the ZnO is about 25 nm. Electron diffraction patterns show that the film on ZnO has a strong {l_brace}111{r_brace} orientation, and dark field images with this diffraction condition have a grain size of about 30 nm. In a region near the center of the TEM grid where there is the greatest local heating during deposition, Ag films grown on amorphous TiO{sub 2} are discontinuous, whereas on ZnO, the film is continuous. When films 8 nm films are grown on solid glass substrates, those with ZnO underlayers have sheet resistances of 5.68 {Omega}/, whereas those on TiO{sub 2} are 7.56 {Omega}/, and when 16 nm thick, the corresponding sheet resistances are 2.7 {Omega}/ and 3.3 {Omega}/. The conductivity difference is very repeatable. The improved conductivity is thought to be a combined effect of reduced grain boundary area per unit volume, the predominance of low grain boundary resistivity Coincidence Site Lattice boundaries from the Ag {l_brace}111{r_brace} orientation, and Ag planarization on ZnO resulting in less groove formation on deposition, concluded from atomic force microscopy.

  10. Selective synthesis of double helices of carbon nanotube bundles grown on treated metallic substrates

    Energy Technology Data Exchange (ETDEWEB)

    Cervantes-Sodi, Felipe; Iniguez-Rabago, Agustin; Rosas-Melendez, Samuel; Ballesteros-Villarreal, Monica [Departamento de Fisica y Matematicas, Universidad Iberoamericana, Prolongacion Paseo de la Reforma 880, Lomas de Santa Fe (Mexico); Vilatela, Juan J. [IMDEA Materials Institute, E.T.S. de Ingenieros de Caminos, Madrid (Spain); Reyes-Gutierrez, Lucio G.; Jimenez-Rodriguez, Jose A. [Ingenieria Industrial, Grupo JUMEX, Ecatepec de Morelos, Estado de Mexico (Mexico); Palacios, Eduardo [Lab. de Microscopia Electronica de Ultra Alta Resolucion, Instituto Mexicano del Petroleo, San Bartolo Atepehuacan (Mexico); Terrones, Mauricio [Department of Physics, Department of Materials Science and Engineering and Materials Research Institute, Pennsylvania State University, University Park, PA (United States); Research Center for Exotic Nanocarbons (JST), Shinshu University, Nagano (Japan)

    2012-12-15

    Double-helix microstructures consisting of two parallel strands of hundreds of multi-walled carbon nanotubes (MWCNTs) have been synthesized by chemical vapour deposition of ferrocene/toluene vapours on metal substrates. Growth of coiled carbon nanostructures with site selectivity is achieved by varying the duration of thermochemical pretreatment to deposit a layer of SiO{sub x} on the metallic substrate. Production of multibranched structures of MWCNTs converging in SiO{sub x} microstructure is also reported. In the abstract figure, panel (a) shows a coloured micrograph of a typical double-helix coiled microstructure of MWCNTs grown on SiO{sub x} covered steel substrate. Green and blue show each of the two individual strands of MWCNTs. Panel (b) is an amplification of a SiO{sub x} microparticle (white) on the tip of the double-stranded coil (green and blue). The microparticle guides the collective growth of hundreds of MWCNTs to form the coiled structure. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  11. Nanostructured and wide bandgap CdS:O thin films grown by reactive RF sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Islam, M. A.; Rahman, K. S.; Haque, F.; Rashid, M. J.; Akhtaruzzaman, M.; Sopian, K.; Sulaiman, Y. [Solar Energy Research Institute (SERI), National University of Malaysia, 43600 Bangi (Malaysia); Amin, N. [Solar Energy Research Institute (SERI), National University of Malaysia, 43600 Bangi (Malaysia); Department of Electrical, Electronic and System Engineering, Faculty of Engineering and Built Environment, National University of Malaysia, 43600 Bangi (Malaysia)

    2015-05-15

    In this study, CdS:O thin films were prepared from a 99.999% CdS target by reactive sputtering in a Ar:O{sub 2} (99:1) ambient with different RF power at room temperature. The deposited films were studied by means of XRD, SEM, EDX, Hall Effect and UV-Vis spectrometry. The incorporations of O{sub 2} into the films were observed to increase with the decrease of deposition power. The cryatallinity of the films were reduced, whereas the band gaps of the films were increased by the increase of O{sub 2} content on the films. The films were found in nano-structured grains with a compact surface. It has been seen that the highest carrier density is observed in the film with O{sub 2} at.% 21.10, while the values decreased with the further increase or decrease of O{sub 2} content on the films; indicating that specific amount of donor like O{sub 2} atoms substitute to the S atoms can improve the carrier density of the CdS:O thin film.

  12. Carbide-Derived Carbon Films for Integrated Electrochemical Energy Storage

    Science.gov (United States)

    Heon, Min

    Active RFID tags, which can communicate over tens or even hundreds of meters, MEMS devices of several microns in size, which are designed for the medical and pharmaceutical purposes, and sensors working in wireless monitoring systems, require microscale power sources that are able to provide enough energy and to satisfy the peak power demands in those applications. Supercapacitors have not been an attractive candidate for micro-scale energy storage, since most nanoporous carbon electrode materials are not compatible with micro-fabrication techniques and have failed to meet the requirements of high volumetric energy density and small form factor for power supplies for integrated circuits or microelectronic devices or sensors. However, supercapacitors can provide high power density, because of fast charging/discharging, which can enable self-sustaining micro-modules when combined with energy-harvesting devices, such as solar cell, piezoelectric or thermoelectric micro-generators. In this study, carbide-derived carbon (CDC) films were synthesized via vacuum decomposition of carbide substrates and gas etching of sputtered carbide thin films. This approach allowed manufacturing of porous carbon films on SiC and silicon substrates. CDC films were studied for micro-supercapacitor electrodes, and showed good double layer capacitance. Since the gas etching technique is compatible with conventional micro-device fabrication processes, it can be implemented to manufacture integrated on-chip supercapacitors on silicon wafers.

  13. High Resistive ZnO/Diamond/Si Films Grown via Metal-organic Chemical Vapour Deposition

    Institute of Scientific and Technical Information of China (English)

    YANG Hong-jun; ZHAO Bai-jun; FANG Xiu-jun; DU Guo-tong; LIU Da-li; GAO Chun-xiao; LIU Xi-zhe

    2005-01-01

    Piezoelectric ZnO layers with high resistivity for surface acoustic wave applications were prepared on polycrystalline diamond/Si substrates with (111) orientation via metal-organic chemical vapour deposition.The characteristics of the films were optimized through different growth methods. The comparative study of the X-ray diffraction spectra and scanning electron microscopic images showed that the final-prepared ZnO films were dominantly c-axis oriented. Zn and O elements in the final prepared ZnO films were investigated through X-ray photoelectron spectroscopy. According to the statistical results, the n(Zn)/n(O) ratio is near 1. The Raman scattering was also performed in back scattering configuration. E2 mode was observed for the final films, which indicated that the better quality ZnO films had been obtained. The resistivity of the films was also enhanced via the modification of the growth methods.

  14. Nanostructured and amorphous-like tungsten films grown by pulsed laser deposition

    Science.gov (United States)

    Dellasega, D.; Merlo, G.; Conti, C.; Bottani, C. E.; Passoni, M.

    2012-10-01

    An experimental investigation of nanostructured, micrometer-thick, tungsten films deposited by pulsed laser deposition is presented. The films are compact and pore-free, with crystal grain sizes ranging from 14 nm to less than 2 nm. It is shown how, by properly tailoring deposition rate and kinetic energy of ablated species, it is possible to achieve a detailed and separate control of both film morphology and structure. The role of the main process parameters, He background pressure, laser fluence, and energy, is elucidated. In contrast with W films produced with other PVD techniques, β-phase growth is avoided and the presence of impurities and contaminants, like oxygen, is not correlated with film structure. These features make these films interesting for the development of coatings with improved properties, like increased corrosion resistance and enhanced diffusion barriers.

  15. Structural and Optical Properties of CdS Thin Film Grown by Chemical Bath Deposition

    Directory of Open Access Journals (Sweden)

    S. Rajpal

    2013-07-01

    Full Text Available In this work we report synthesis and optical characterization of CdS thin films coated on glass substrate. The films were deposited using chemical bath deposition method. Scanning Electron microscopy shows a uniform film of CdS film at particular concentration and dipping time. The Energy Dispersive spectroscopy reveals the presence of Cd and S in the CdS film. X-Ray diffraction confirms the cubic structure of CdS deposited on glass and amorphous nature of glass. Optical and photoluminescence studies were done using UV-Visible spectroscopy and Photoluminescence spectroscopy respectively. We have determined bandgap by analyzing UV-Visible spectra results. Wettability studies were done using Optical Contact Angle, which confirms the hydrophobic nature of the CdS films.

  16. Structural and electrical properties of ultrathin niobium nitride films grown by atomic layer deposition

    Science.gov (United States)

    Linzen, S.; Ziegler, M.; Astafiev, O. V.; Schmelz, M.; Hübner, U.; Diegel, M.; Il’ichev, E.; Meyer, H.-G.

    2017-03-01

    We studied and optimised the properties of ultrathin superconducting niobium nitride films fabricated with a plasma-enhanced atomic layer deposition (PEALD) process. By adjusting process parameters, the chemical embedding of undesired oxygen into the films was minimised and a film structure consisting of mainly polycrystalline niobium nitride with a small fraction of amorphous niobium oxide and niobium oxo-nitrides were formed. For this composition a critical temperature of 13.8 K and critical current densities of 7 × 106 A cm–2 at 4.2 K were measured on 40 nm thick films. A fundamental correlation between these superconducting properties and the crystal lattice size of the cubic δ-niobium-nitride grains were found. Moreover, the film thickness variation between 40 and 2 nm exhibits a pronounced change of the electrical conductivity at room temperature and reveals a superconductor–insulator-transition in the vicinity of 3 nm film thickness at low temperatures. The thicker films with resistances up to 5 kΩ per square in the normal state turn to the superconducting one at low temperatures. The perfect thickness control and film homogeneity of the PEALD growth make such films extremely promising candidates for developing novel devices on the coherent quantum phase slip effect.

  17. Fractal features of CdTe thin films grown by RF magnetron sputtering

    Science.gov (United States)

    Hosseinpanahi, Fayegh; Raoufi, Davood; Ranjbarghanei, Khadijeh; Karimi, Bayan; Babaei, Reza; Hasani, Ebrahim

    2015-12-01

    Cadmium telluride (CdTe) thin films were prepared by RF magnetron sputtering on glass substrates at room temperature (RT). The film deposition was performed for 5, 10, and 15 min at power of 30 W with a frequency of 13.56 MHz. The crystal structure of the prepared CdTe thin films was studied by X-ray diffraction (XRD) technique. XRD analyses indicate that the CdTe films are polycrystalline, having zinc blende structure of CdTe irrespective of their deposition time. All CdTe films showed a preferred orientation along (1 1 1) crystalline plane. The surface morphology characterization of the films was studied using atomic force microscopy (AFM). The quantitative AFM characterization shows that the RMS surface roughness of the prepared CdTe thin films increases with increasing the deposition time. The detrended fluctuation analysis (DFA) and also multifractal detrended fluctuation analysis (MFDFA) methods showed that prepared CdTe thin films have multifractal nature. The complexity, roughness of the CdTe thin films and strength of the multifractality increase as deposition time increases.

  18. Characterization of ZnO:Si nanocomposite films grown by thermal evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Siddiqui, Shabnam; Kant, Chhaya Ravi [Department of Applied Sciences, Indira Gandhi Institute of Technology, Guru Gobind Singh Indraprastha University, Delhi 110 006 (India); Arun, P. [Department of Physics and Electronics, S.G.T.B. Khalsa College, University of Delhi, Delhi-110 007 (India)], E-mail: arunp92@physics.du.ac.in; Mehra, N.C. [University Science Instrumentation Centre, University of Delhi, Delhi 110 007 (India)

    2008-11-24

    Composite films were fabricated by co-evaporating Zinc Oxide with Silicon at room temperatures. The resulting films had polycrystalline grains of Zinc Oxide whose grain size were few hundred nanometers, embedded in the silicon matrix. These nanocrystalline grains of ZnO showed good photoluminescence emission at 520 nm along with a photoluminescence emission at 620 nm being contributed by the silicon background. Thus, the nanocomposite films gave a board emission, making it a potentially useful candidate for optoelectronic devices. The photo-luminescent property of the films was found to be stable since the homgenously dispersed ZnO nanocrystals were not allowed to agglomerate by the silicon background.

  19. Structural and electronic properties of polar MnO ultrathin film grown on Ag(111)

    Science.gov (United States)

    Kundu, Asish K.; Menon, Krishnakumar S. R.

    2016-05-01

    Surface electronic structure of ultrathin polar MnO film was studied by Low-energy Electron Diffraction (LEED) and Photoemission Spectroscopic (PES) techniques. Epitaxial monolayer to facet formation with increasing film thickness has been observed by LEED. Our LEED result shows p(2x2) surface reconstruction along with facet formation, stabilize the polar MnO(111) surface. The core levels and the valence band electronic structure of MnO films have been studied as a function of film thickness using X-ray and ultraviolet photoelectron spectroscopy techniques.

  20. Structural and biological properties of carbon nanotube composite films

    Energy Technology Data Exchange (ETDEWEB)

    Narayan, Roger J. [School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0245 (United States)]. E-mail: roger.narayan@mse.gatech.edu; Berry, C.J. [Environmental Biotechnology Section, Savannah River National Laboratory, Aiken, SC 29808 (United States); Brigmon, R.L. [Environmental Biotechnology Section, Savannah River National Laboratory, Aiken, SC 29808 (United States)

    2005-11-20

    Carbon nanotube composite films have been developed that exhibit unusual structural and biological properties. These novel materials have been created by pulsed laser ablation of graphite and bombardment of nitrogen ions at temperatures between 600 and 700 deg. C. High-resolution transmission electron microscopy and radial distribution function analysis demonstrate that this material consists of sp{sup 2}-bonded concentric ribbons that are wrapped approximately 15 deg. normal to the silicon substrate. The interlayer order in this material extends to approximately 15-30 A. X-ray photoelectron spectroscopy and Raman spectroscopy data suggest that this material is predominantly trigonally coordinated. The carbon nanotube composite structure results from the use of energetic ions, which allow for non-equilibrium growth of graphitic planes. In vitro testing has revealed significant antimicrobial activity of carbon nanotube composite films against Staphylococcus aureus and Staphylococcus warneri colonization. Carbon nanotube composite films may be useful for inhibiting microorganism attachment and biofilm formation in hemodialysis catheters and other medical devices.

  1. Magnetic anisotropy of crystalline Fe films grown on (001 GaAs substrates using Ge buffer layers

    Directory of Open Access Journals (Sweden)

    Seul-Ki Bac

    2016-05-01

    Full Text Available Magnetic anisotropy of Fe films grown on (001 GaAs substrates using Ge buffer layers were investigated by planar Hall effect measurements. In addition to phenomena arising from dominant cubic symmetry of the Fe specimen, the study of angular dependence of magnetization reversal revealed breaking of this symmetry in the form of systematic asymmetric shifts of magnetic hysteresis loops around the crystallographic directions. We ascribe such symmetry breaking to an admixture of uniaxial anisotropy associated with the [100] direction in the Fe film. To determine the parameters associated with this uniaxial anisotropy, we quantitatively analyze the asymmetric shifts of the hysteresis loop centers from the directions. Even though the value of these parameters turns out to be relatively small compared to that of the cubic anisotropy (by about two orders of magnitude, they survive up to room temperature.

  2. Magnetic anisotropy of crystalline Fe films grown on (001) GaAs substrates using Ge buffer layers

    Science.gov (United States)

    Bac, Seul-Ki; Lee, Hakjoon; Lee, Sangyeop; Choi, Seonghoon; Yoo, Taehee; Lee, Sanghoon; Liu, X.; Furdyna, J. K.

    2016-05-01

    Magnetic anisotropy of Fe films grown on (001) GaAs substrates using Ge buffer layers were investigated by planar Hall effect measurements. In addition to phenomena arising from dominant cubic symmetry of the Fe specimen, the study of angular dependence of magnetization reversal revealed breaking of this symmetry in the form of systematic asymmetric shifts of magnetic hysteresis loops around the crystallographic directions. We ascribe such symmetry breaking to an admixture of uniaxial anisotropy associated with the [100] direction in the Fe film. To determine the parameters associated with this uniaxial anisotropy, we quantitatively analyze the asymmetric shifts of the hysteresis loop centers from the directions. Even though the value of these parameters turns out to be relatively small compared to that of the cubic anisotropy (by about two orders of magnitude), they survive up to room temperature.

  3. Compositional dependence of Raman scattering and photoluminescence emission in Cu-Ga-Se films grown by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Grossberg, M., E-mail: mgross@staff.ttu.e [Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn (Estonia); Krustok, J. [Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn (Estonia); Siebentritt, S. [Universite du Luxembourg, 162a avenue de la Faiencerie, L-1511 Luxembourg (Luxembourg); Albert, J. [Helmholtz Centre Berlin, Glienicker Strasse 100, 14109 Berlin (Germany)

    2009-07-01

    This paper presents Raman scattering and photoluminescence (PL) analysis of polycrystalline Cu-Ga-Se films grown epitaxially on the GaAs substrate. In the compositional dependence of the Raman spectra of the CuGaSe{sub 2} films, the appearance of the ordered vacancy compounds (OVCs) CuGa{sub 3}Se{sub 5} and CuGa{sub 5}Se{sub 8} was observed. The dominating A{sub 1} Raman modes were detected at 185, 166 and 159 cm{sup -1}, respectively. The PL bands of CuGaSe{sub 2}, CuGa{sub 3}Se{sub 5} and CuGa{sub 5}Se{sub 8} at T=10 K were detected at 1.615, 1.72 and 1.76 eV, respectively. The dominating PL emission channel is the band-to-tail (BT) type recombination.

  4. Nucleation and Growth of MOCVD Grown (Cr, Zn)O Films – Uniform Doping vs. Secondary Phase Formation

    Energy Technology Data Exchange (ETDEWEB)

    Saraf, Laxmikant V.; Engelhard, Mark H.; Nachimuthu, Ponnusamy; Shutthanandan, V.; Wang, Chong M.; Heald, Steve M.; McCready, David E.; Lea, Alan S.; Baer, Donald R.; Chambers, Scott A.

    2007-01-17

    We report a detailed study of chromium solubility and secondary phase formation in MOCVD grown (Cr, Zn)O-based films on silicon (100). Simultaneous deposition of 0.15M Cr(TMHD) and 0.025M Zn(TMHD) based precursors in an oxidizing environment with a flow ratio of 1:10 resulted in secondary phase formation rather than uniform Cr doping. Based on several surface and micro-structural techniques, we have identified nano-crystalline ZnCr2O4 and disordered Cr2O3 as the secondary Cr-containing phases that nucleate. Analysis suggests that ZnCr2O4 crystallites are dispersed throughout the film and that disordered Cr2O3 layer may form at the interface. These results reveal a strong tendency for Cr to exist in octahedral, rather than tetrahedral coordination.

  5. Effect of deposition conditions on the growth rate and electrical properties of ZnO thin films grown by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Roro, K.T.; Botha, J.R.; Leitch, A.W.R. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa)

    2008-07-01

    ZnO thin films have been grown on glass substrates by MOCVD. The effect of deposition conditions such as VI/II molar ratio, DEZn flow rate and total reactor pressure on the growth rate and electrical properties of the films was studied. It is found that the growth rate decreases with an increase in the VI/II molar ratio. This behaviour is ascribed to the competitive adsorption of reactant species on the growth surface. The growth rate increases with an increase in DEZn flow rate, as expected. It is shown that the carrier concentration is independent of the DEZn flow rate. An increase in the total reactor pressure yields a decrease in growth rate. This phenomenon is attributed to the depletion of the gas phase due to parasitic prereactions between zinc and oxygen species at high pressure. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  6. Upper critical field of as-grown MgB{sub 2} thin films by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Harada, Y. [Department of Material Science and Engineering, Iwate University, Iwate Industrial Promotion Center, Iioka shinden 3-35-2, Morioka 020-0852 (Japan)]. E-mail: yharada@luck.ocn.ne.jp; Udsuka, M. [Graduate School of Engineering, Iwate University, Ueda 4-3-5, Morioka 020-8551 (Japan); Takahashi, T. [Graduate School of Engineering, Iwate University, Ueda 4-3-5, Morioka 020-8551 (Japan); Nakanishi, Y. [Graduate School of Engineering, Iwate University, Ueda 4-3-5, Morioka 020-8551 (Japan); Yoshizawa, M. [Graduate School of Engineering, Iwate University, Ueda 4-3-5, Morioka 020-8551 (Japan)

    2005-04-30

    Superconducting thin films of magnesium diboride (MgB{sub 2}) were prepared on MgO(001) substrate by molecular beam epitaxy in the co-evaporation conditions of low deposition rate and ultra-high vacuum. A superconducting transition with the onset temperature of 31.2K was confirmed by both transport and magnetization measurements. The upper critical fields are obtained from measurement of the field dependence of the resistivity. It was estimated that the upper critical field at 0K was more than 15T. The upper critical field anisotropy ratio, H{sub C2,ab}(0)/H{sub C2,c}(0), was estimated to be 1.78 from the magnetic field-temperature phase diagram for as-grown MgB{sub 2} thin films.

  7. Crystallographic and electronic contribution to the apparent step height in nanometer-thin Pb(111) films grown on Cu(111)

    Energy Technology Data Exchange (ETDEWEB)

    Calleja, Fabian; Parga, Amadeo L Vazquez de; Anglada, Eduardo; Hinarejos, Juan Jose; Miranda, Rodolfo; Yndurain, Felix [Departamento de Fisica de la Materia Condensada, Universidad Autonoma de Madrid, Cantoblanco 28049, Madrid (Spain)], E-mail: al.vazquezdeparga@uam.es

    2009-12-15

    Thermal roughening of Pb(111) films grown on Cu(111) produces three-dimensional (3D) islands of different number of layers allowing the simultaneous and direct measurement by scanning tunneling microscopy (STM) of the step height for different thicknesses in real space. The apparent step heights separating adjacent layers show several oscillations with amplitudes of up to 0.8-1.4 A around the bulk interlayer distance as a function of film thickness. The oscillations have bilayer periodicity with a superimposed longer beating period that produces a phase slip every eight layers. Based on first-principles calculations of Pb(111) free standing slabs, we can identify the relevant electronic states responsible for these quantum size effects. In addition, we can distinguish between geometric and electronic contributions to the apparent step heights measured on the STM images.

  8. Impact of low temperature annealing on structural, optical, electrical and morphological properties of ZnO thin films grown by RF sputtering for photovoltaic applications

    Science.gov (United States)

    Purohit, Anuradha; Chander, S.; Sharma, Anshu; Nehra, S. P.; Dhaka, M. S.

    2015-11-01

    This paper presents effect of low temperature annealing on the physical properties of ZnO thin films for photovoltaic applications. The thin films of thickness 50 nm were grown on glass and indium tin oxide (ITO) coated glass substrates employing radio frequency magnetron sputtering technique followed by thermal annealing within low temperature range 150-450 °C. These as-grown and annealed films were subjected to the X-ray diffraction (XRD), UV-Vis spectrophotometer, source meter and scanning electron microscopy (SEM) for structural, optical, electrical and surface morphological analysis respectively. The compositional analysis of the as-grown ZnO film was also carried out using energy dispersive spectroscopy (EDS). The XRD patterns reveal that the films have wurtzite structure of hexagonal phase with preferred orientation (1 0 0) and polycrystalline in nature. The crystallographic and optical parameters are calculated and discussed in detail. The optical band gap was found in the range 3.30-3.52 eV and observed to decrease with annealing temperature except 150 °C. The current-voltage characteristics show that the films exhibit approximately ohmic behavior. The SEM studies show that the films are uniform, homogeneous and free from crystal defects and voids. The experimental results reveal that ZnO thin films may be used as alternative materials for eco-friendly buffer layer to the thin film solar cell applications.

  9. Growth, Nitrogen Uptake and Carbon Isotope Discrimination in Barley Genotypes Grown under Saline Conditions

    Directory of Open Access Journals (Sweden)

    Kurdali Fawaz

    2012-08-01

    Full Text Available The effect of different salinity levels of irrigation water (ECw range 1-12 dS/m on dry matter yield, nitrogen uptake, fertilizer nitrogen use efficiency (%NUE, stomatal conductance and carbon isotope discrimination (Δ13C‰ in three barley genotypes originating from different geographic areas (Arabi.Abiad, Syria; Pk-30-136, Pakistan and WI-2291, Australia was investigated in a pot experiment. An increase in salinity resulted in a decrease in Δ13C in all the genotypes. Increasing salinity reduced leaf stomatal conductance which was less pronounced in WI-2291 comparing to other genotypes. At high salinity level, the reduction in Δ13C corresponded to a considerable decrease in the ratio (Ci/Ca of intercellular (Ci and atmospheric (Ca partial pressures of CO2 in all the genotypes indicating that such a decrease was mainly due to the stomatal closure. Moreover, since the reduction in dry matter yield in all the genotypes grown at 12 dS/m did not exceed 50% in comparison with their controls, the photosynthetic apparatus of all studied genotypes seemed to be quit tolerant to salinity. At the moderate salinity level (8 dS/m, the enhancement of leaf dry matter yield in the WI2291 genotype might have been due to positive nutritional effects of the salt as indicated by a significant increase in nitrogen uptake and NUE. Thus, the lower Ci/Ca ratio could result mainly from higher rates of photosynthetic capacity rather than stomatal closure. On the other hand, relationships between dry matter yield or NUE and Δ13C seemed to be depending on plant genotype, plant organ and salinity level. Based on growth, nutritional and Δ13C data, selection of barley genotypes for saline environments was affected by salinity level. Therefore, such a selection must be achieved for each salinity level under which the plants have been grown.

  10. The irradiation studies on diamond-like carbon films

    CERN Document Server

    LiuGuIang; Xie Er Qin

    2002-01-01

    Diamond-like carbon (DLC) films have been deposited on glass substrates using radio-frequency (r.f.) plasma deposition method. gamma-ray, ultraviolet (UV) ray and neutron beam were used to irradiate the DLC films. Raman spectroscopy and infrared (IR) spectroscopy were used to characterize the changing characteristics of SP sup 3 C-H bond and hydrogen content in the films due to the irradiations. It showed that, the damage degrees of the gamma-ray, UV ray and neutron beam on the SP sup 3 C-H bonds are different. Among them, the damage of gamma-ray on the SP sup 3 C-H bond is the weakest. When the irradiation dose of gamma-ray reaches 10x10 sup 4 Gy, the SP sup 3 C-H bond reduces about 50% in number. The square resistance of the films is reduced due to the irradiation of UV ray and this is caused by severe oxidation of the films. Compared with that of the as-deposited one, the IR transmittance of the films irradiated by both gamma-ray and neutron beam is increased to some extent. By using the results on optical...

  11. Formation of conducting nanochannels in diamond-like carbon films

    Science.gov (United States)

    Evtukh, A.; Litovchenko, V.; Semenenko, M.; Yilmazoglu, O.; Mutamba, K.; Hartnagel, H. L.; Pavlidis, D.

    2006-09-01

    A sharp increase of the emission current at high electric fields and a decrease of the threshold voltage after pre-breakdown conditioning of diamond-like carbon (DLC) films have been measured. This effect was observed for DLC-coated silicon tips and GaAs wedges. During electron field emission (EFE) at high electric fields the energy barriers caused by an sp3 phase between sp2 inclusions can be broken, resulting in the formation of conducting nanochannels between the semiconductor-DLC interface and the surface of the DLC film. At high current densities and the resulting local heating, the diamond-like sp3 phase transforms into a conducting graphite-like sp2 phase. As a result an electrical conducting nanostructured channel is formed in the DLC film. The diameter of the conducting nanochannel was estimated from the reduced threshold voltage after pre-breakdown conditioning to be in the range of 5-25 nm. The presence of this nanochannel in an insulating matrix leads to a local enhancement of the electric field and a reduced threshold voltage for EFE. Based on the observed features an efficient method of conducting nanochannel matrix formation in flat DLC films for improved EFE efficiency is proposed. It mainly uses a silicon tip array as an upper electrode in contact with the DLC film. The formation of nanochannels starts at the interface between the tips and the DLC film. This opens new possibilities of aligned and high-density conducting channel formation.

  12. Raman scattering of polycrystalline GaSb thin films grown by the co-evaporation process

    Institute of Scientific and Technical Information of China (English)

    Qiao Zai-Xiang; Sun Yun; He Wei-Yu; Liu Wei; He Qing; Li Chang-Jian

    2009-01-01

    This paper reports that GaSb thin films have been co-deposited on soda-lime glass substrates. The GaSb thin film structural properties are characterized by Raman spectroscopy. The Sb-A1g/GaSb-TO ratio decreases rapidly with the increase of substrate temperature, which suggests a small amount of crystalline Sb in the GaSb thin film and suggests that Sb atoms in the thin film decrease. In Raman spectra, the transverse optical (TO) mode intensity is stronger than that of the longitudinal optical (LO) mode, which indicates that all the samples arc disordered. The LO/TO intensity ratio increases with increasing substrate temperature which suggests the improved polycrystalline quality of the GaSb thin film. A downshift of the TO and LO frequencies of the polycrystalline GaSb thin film to single crystalline bulk GaSb Raman spectra is also observed. The uniaxial stress in GaSb thin film is calculated and the value is around 1.0 Gpa. The uniaxial stress decreases with increasing substrate temperature. These results suggest that a higher substrate temperature is beneficial in relaxing the stress in GaSb thin film.

  13. Depth dependent properties of ITO thin films grown by pulsed DC sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Sytchkova, A., E-mail: anna.sytchkova@enea.it [ENEA Optical Coatings Laboratory, via Anguillarese 301, 00123 Rome (Italy); Zola, D. [ENEA Optical Coatings Laboratory, via Anguillarese 301, 00123 Rome (Italy); Bailey, L.R.; Mackenzie, B.; Proudfoot, G. [Oxford Instruments Plasma Technology, Yatton, Bristol, BS49 4AP (United Kingdom); Tian, M. [NT-MDT Europe BV, High Tech Campus 83, 5656 AG Eindhoven (Netherlands); Ulyashin, A. [SINTEF Materials and Chemistry, Forskningsveien 1, P.O. 124 Blindern, NO-0314 Oslo (Norway)

    2013-05-15

    A systematically prepared set of ITO layers for solar cell applications has been analyzed by spectroscopic variable angle ellipsometry in order to trace the dependence of free carriers’ distribution along the film depth as a function of film thickness as well as its change upon annealing. Samples were deposited on silicon substrates with various thicknesses in steps of approximately 10–20 nm. This set was duplicated and these samples were annealed, so that for each thickness an as-deposited and an annealed sample is available. Conventionally measured electrical conductivity and morphological properties (AFM measurements) of the films have been compared with the optical constants’ inhomogeneity, i.e. material properties along the film thickness modelled by variable-angle spectroscopic ellipsometry. The obtained results show that the optical as well as electrical properties of thin ITO films prepared by pulsed DC sputtering are depth dependent. For the deposition conditions used a well-determined reproducible non-uniform distribution of free carriers within the film thickness was determined. In particular it has been found that the majority of free carriers in as-deposited ultra-thin ITO films is concentrated at sample half-depth, while their distribution becomes asymmetric for the thicker films, with a maximum located at approximately 40 nm depth. The distribution of free carriers in annealed samples is qualitatively different from that of as-deposited layers.

  14. Ultrathin diamond-like carbon films deposited by filtered carbon vacuum arcs

    Energy Technology Data Exchange (ETDEWEB)

    Anders, Andre; Fong, Walton; Kulkarni, Ashok; Ryan, Francis W.; Bhatia, C. Singh

    2001-07-13

    Ultrathin (< 5 nm) hard carbon films are of great interest to the magnetic storage industry as the areal density approaches 100 Gbit/in{sup 2}. These films are used as overcoats to protect the magnetic layers on disk media and the active elements of the read-write slider. Tetrahedral amorphous carbon films can be produced by filtered cathodic arc deposition, but the films will only be accepted by the storage industry only if the ''macroparticle'' issue has been solved. Better plasma filters have been developed over recent years. Emphasis is put on the promising twist filter system - a compact, open structure that operates with pulsed arcs and high magnetic field. Based on corrosion tests it is shown that the macroparticle reduction by the twist filter is satisfactory for this demanding application, while plasma throughput is very high. Ultrathin hard carbon films have been synthesized using S-filter and twist filter systems. Film properties such as hardness, elastic modulus, wear, and corrosion resistance have been tested.

  15. Epitaxial LaFeAsO{sub 1-x}F{sub x} thin films grown by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Kidszun, M; Haindl, S; Reich, E; Haenisch, J; Iida, K; Schultz, L; Holzapfel, B, E-mail: M.Kidszun@ifw-dresden.d [IFW Dresden, Institute for Metallic Materials, PO Box 270116, D-01171 Dresden (Germany)

    2010-02-15

    Superconducting and epitaxially grown LaFeAsO{sub 1-x}F{sub x} thin films were successfully prepared on (001)-oriented LaAlO{sub 3} substrates using pulsed laser deposition. The prepared thin films show exclusively a single in-plane orientation with the epitaxial relation (001)[100]||(001)[100] and a full width at half-maximum value of 1{sup 0}. Furthermore, resistive measurement of the superconducting transition temperature revealed a T{sub c,90%} of 25 K with a high residual resistive ratio of 6.8. The preparation technique applied, standard thin film pulsed laser deposition at room temperature in combination with a subsequent post-annealing process, is suitable for fabrication of high quality LaFeAsO{sub 1-x}F{sub x} thin films. A high upper critical field of 76.2 T was evaluated for magnetic fields applied perpendicular to the c-axis and the anisotropy was calculated to be 3.3 assuming single band superconductivity. (rapid communication)

  16. Structure analysis of Ni thin films epitaxially grown on bcc metal underlayers formed on MgO(100 substrates

    Directory of Open Access Journals (Sweden)

    Futamoto Masaaki

    2013-01-01

    Full Text Available Ni thin films are prepared on Cr, V, and Nb underlayers with bcc structure formed on MgO(100 single-crystal substrates by molecular beam epitaxy. The growth behavior and the crystallographic properties are investigated by in-situ reflection high-energy electron diffraction and pole-figure X-ray diffraction. Cr(100 and V(100 single-crystal underlayers grow epitaxially on the substrates, whereas an Nb epitaxial_underlayer consisting of two bcc(110 variants is formed on the MgO(100 substrate. Metastable crystals nucleate on the Cr and the V underlayers, where the metastable hcp structure is stabilized through heteroepitaxial growth. With increasing the film thickness, the hcp structure starts to transform into more stable fcc structure by atomic displacement parallel to the hcp(0001 close-packed plane. The resulting films are consisting of mixtures of hcp and fcc crystals. On the other hand, only the formation of fcc crystal is recognized for the Ni film grown on Nb(110 underlayer.

  17. Surfactant controlled switching of water-in-oil wetting behaviour of porous silica films grown at oil-water interfaces

    Indian Academy of Sciences (India)

    Manish M Kulkarni; Rajdip Bandyopadhyaya; Ashutosh Sharma

    2008-11-01

    Selective permeation of oil and water across a porous medium, as in oil recovery operations, depends on the preferential wetting properties of the porous medium. We show a profound influence of surfactants in wetting of porous media and thus demonstrate a new route for the control of water-in-oil wetting of porous substrates by changing the concentration of surfactants in an aqueous sub-phase below the substrate. This strategy is employed to engineer partial reversible wetting transitions on a porous silica film. The film itself is grown and stabilized on a flat, macroscopic interface between an oil phase and an aqueous sub-phase. On increasing the surfactant (CTAB) concentration in the sub-phase, contact angle of a water drop (placed on the oil side of the film) changes from 140° to 16° in 25 min by diffusion of the surfactant across the porous film. On further replacement of the sub-phase with pure water, diffusion of the surfactant from the water drop back to the sub-phase was slower, increasing the contact angle in the process from 16° to 90° in 2 h. Wettability control by a cationic surfactant (CTAB) was found to be much faster (6 deg/min) than that offered by an anionic surfactant, SDS (0.05 deg/min). Switching of the surface wettability due to the surfactant diffusion may have implications in oil-water separation, chemical bed reactors and microfluidic devices.

  18. Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method

    Directory of Open Access Journals (Sweden)

    Yang Tieying

    2011-01-01

    Full Text Available Abstract Cracks appeared in GaN epitaxial layers which were grown by a novel method combining metal organic vapor-phase epitaxy (MOCVD and hydride vapor-phase epitaxy (HVPE in one chamber. The origin of cracks in a 22-μm thick GaN film was fully investigated by high-resolution X-ray diffraction (XRD, micro-Raman spectra, and scanning electron microscopy (SEM. Many cracks under the surface were first observed by SEM after etching for 10 min. By investigating the cross section of the sample with high-resolution micro-Raman spectra, the distribution of the stress along the depth was determined. From the interface of the film/substrate to the top surface of the film, several turnings were found. A large compressive stress existed at the interface. The stress went down as the detecting area was moved up from the interface to the overlayer, and it was maintained at a large value for a long depth area. Then it went down again, and it finally increased near the top surface. The cross-section of the film was observed after cleaving and etching for 2 min. It was found that the crystal quality of the healed part was nearly the same as the uncracked region. This indicated that cracking occurred in the growth, when the tensile stress accumulated and reached the critical value. Moreover, the cracks would heal because of high lateral growth rate.

  19. Electrical characterization of gadolinia doped ceria films grown by pulsed laser deposition

    DEFF Research Database (Denmark)

    Rodrigo, Katarzyna Agnieszka; Heiroth, Sebastian; Lundberg, Mats

    2010-01-01

    Electrical characterization of 10 mol% gadolinia doped ceria (CGO10) films of different thicknesses prepared on MgO(100) substrates by pulsed laser deposition is presented. Dense, polycrystalline and textured films characterized by fine grains (grain sizes ... thickness. The conductivity of the nanocrystalline films is lower (7.0×10−4 S/cm for the 20-nm film and 3.6×10−3 S/cm for the 435-nm film, both at 500°C) than that of microcrystalline, bulk samples ( S/cm at 500°C). The activation energy for the conduction is found to be 0.83 eV for the bulk material, while...

  20. Structural and morphological properties of metallic thin films grown by pulsed laser deposition for photocathode application

    Science.gov (United States)

    Lorusso, A.; Gontad, F.; Caricato, A. P.; Chiadroni, E.; Broitman, E.; Perrone, A.

    2016-03-01

    In this work yttrium and lead thin films have been deposited by pulsed laser deposition technique and characterized by ex situ different diagnostic methods. All the films were adherent to the substrates and revealed a polycrystalline structure. Y films were uniform with a very low roughness and droplet density, while Pb thin films were characterized by a grain morphology with a relatively high roughness and droplet density. Such metallic materials are studied because they are proposed as a good alternative to copper and niobium photocathodes which are generally used in radiofrequency and superconducting radiofrequency guns, respectively. The photoemission performances of the photocathodes based on Y and Pb thin films have been also studied and discussed.

  1. Metastable fcc-Fe film epitaxially grown on Cu(100) single-crystal underlayer

    Science.gov (United States)

    Ohtake, Mitsuru; Shimamoto, Kohei; Futamoto, Masaaki

    2013-05-01

    Fe film of 40 nm thickness is prepared on fcc-Cu(100) single-crystal underlayer at room temperature by ultra-high vacuum molecular beam epitaxy. The film growth and the detailed structure are investigated by reflection high-energy electron diffraction, cross-sectional high-resolution transmission electron microscopy (HR-TEM), and x-ray diffraction (XRD). An Fe single-crystal with metastable fcc structure nucleates on the underlayer. The HR-TEM shows that fcc lattice is formed from the Fe/Cu interface up to the film surface. A large number of misfit dislocations are introduced around the Fe/Cu interface due to an accommodation of lattice mismatch. Dislocations exist up to the film near surface. The lattice constant is estimated by XRD to be a = 0.3607 nm. The film shows a ferromagnetic property, which reflects the property of fcc-Fe crystal with high-spin ferromagnetic state.

  2. Properties of CdTe nanocrystalline thin films grown on different substrates by low temperature sputtering

    Institute of Scientific and Technical Information of China (English)

    Chen Huimin; Guo Fuqiang; Zhang Baohua

    2009-01-01

    CdTe nanocrystalline thin films have been prepared on glass, Si and Al2O3 substrates by radio-frequency magnetron sputtering at liquid nitrogen temperature. The crystal structure and morphology of the films were characterized by X-ray diffraction (XRD) and field-emission scanning electron microscopy (FESEM). The XRD examinations revealed that CdTe films on glass and Si had a better crystal quality and higher preferential orientation along the (111) plane than the Al2O3. FESEM observations revealed a continuous and dense morphology of CdTe films on glass and Si substrates. Optical properties of nanocrystalline CdTe films deposited on glass substrates for different deposited times were studied.

  3. Study of structural and optical properties of ZnO films grown by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Lemlikchi, S., E-mail: lemlikchi_safo@yahoo.fr [Advanced Technology Development Centre, Cite 20 Aout 1956 BP 17 Baba Hassen, Algiers (Algeria); Abdelli-Messaci, S.; Lafane, S.; Kerdja, T. [Advanced Technology Development Centre, Cite 20 Aout 1956 BP 17 Baba Hassen, Algiers (Algeria); Guittoum, A.; Saad, M. [Nuclear Research Centre of Algiers, 2 Bd Frantz-Fanon, Algiers (Algeria)

    2010-07-01

    Wurtzite zinc oxides films (ZnO) were deposited on silicon (0 0 1) and corning glass substrates using the pulsed laser deposition technique. The laser fluence, target-substrate distance, substrate temperature of 300 deg. C were fixed while varying oxygen pressures from 2 to 500 Pa were used. It is observed that the structural properties of ZnO films depend strongly on the oxygen pressure and the substrate nature. The film crystallinity improves with decreasing oxygen pressure. At high oxygen pressure, the films are randomly oriented, whereas, at low oxygen pressures they are well oriented along [0 0 1] axis for Si substrates and along [1 0 3] axis for glass substrates. A honeycomb structure is obtained at low oxygen pressures, whereas microcrystalline structures were obtained at high oxygen pressures. The effect of oxygen pressure on film transparency, band gap E{sub g} and Urbach energies was investigated.

  4. Crack-free and scalable transfer of carbon nanotube arrays into flexible and highly thermal conductive composite film.

    Science.gov (United States)

    Wang, Miao; Chen, Hongyuan; Lin, Wei; Li, Zhuo; Li, Qiang; Chen, Minghai; Meng, Fancheng; Xing, Yajuan; Yao, Yagang; Wong, Ching-ping; Li, Qingwen

    2014-01-08

    Carbon nanotube (CNT) arrays show great promise in developing anisotropic thermal conductive composites for efficiently dissipating heat from high-power devices along thickness direction. However, CNT arrays are always grown on some substrates and liable to be deformed and broken into pieces during transfer and solution treatment. In the present study, we intentionally synthesized well-crystallized and large-diameter (~80 nm) multiwalled CNT (MWCNT) arrays by floating catalyst chemical vapor deposition (FCCVD) method. Such arrays provided high packing density and robust structure from collapse and crack formation during post solution treatment and therefore favored to maintain original thermal and electrical conductive paths. Under optimized condition, the CNT arrays can be transferred into flexible composite films. Furthermore, the composite film also exhibited excellent thermal conductivity at 8.2 W/(m·K) along thickness direction. Such robust, flexible, and highly thermal conductive composite film may enable some prospective applications in advanced thermal management.

  5. Filtered pulsed cathodic arc deposition of fullerene-like carbon and carbon nitride films

    Science.gov (United States)

    Tucker, Mark D.; Czigány, Zsolt; Broitman, Esteban; Näslund, Lars-Åke; Hultman, Lars; Rosen, Johanna

    2014-04-01

    Carbon and carbon nitride films (CNx, 0 ≤ x ≤ 0.26) were deposited by filtered pulsed cathodic arc and were investigated using transmission electron microscopy and X-ray photoelectron spectroscopy. A "fullerene-like" (FL) structure of ordered graphitic planes, similar to that of magnetron sputtered FL-CNx films, was observed in films deposited at 175 °C and above, with N2 pressures of 0 and 0.5 mTorr. Higher substrate temperatures and significant nitrogen incorporation are required to produce similar FL structure by sputtering, which may, at least in part, be explained by the high ion charge states and ion energies characteristic of arc deposition. A gradual transition from majority sp3-hybridized films to sp2 films was observed with increasing substrate temperature. High elastic recovery, an attractive characteristic mechanical property of FL-CNx films, is evident in arc-deposited films both with and without nitrogen content, and both with and without FL structure.

  6. Filtered pulsed cathodic arc deposition of fullerene-like carbon and carbon nitride films

    Energy Technology Data Exchange (ETDEWEB)

    Tucker, Mark D., E-mail: martu@ifm.liu.se; Broitman, Esteban; Näslund, Lars-Åke; Hultman, Lars; Rosen, Johanna [Thin Film Physics Division, Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-58183 Linköping (Sweden); Czigány, Zsolt [Institute for Technical Physics and Materials Science, RCNS, Hungarian Academy of Sciences, P.O. Box 49, H-1525 Budapest (Hungary)

    2014-04-14

    Carbon and carbon nitride films (CN{sub x}, 0 ≤ x ≤ 0.26) were deposited by filtered pulsed cathodic arc and were investigated using transmission electron microscopy and X-ray photoelectron spectroscopy. A “fullerene-like” (FL) structure of ordered graphitic planes, similar to that of magnetron sputtered FL-CN{sub x} films, was observed in films deposited at 175 °C and above, with N{sub 2} pressures of 0 and 0.5 mTorr. Higher substrate temperatures and significant nitrogen incorporation are required to produce similar FL structure by sputtering, which may, at least in part, be explained by the high ion charge states and ion energies characteristic of arc deposition. A gradual transition from majority sp{sup 3}-hybridized films to sp{sup 2} films was observed with increasing substrate temperature. High elastic recovery, an attractive characteristic mechanical property of FL-CN{sub x} films, is evident in arc-deposited films both with and without nitrogen content, and both with and without FL structure.

  7. Carbon Nanotube Film-Based Speaker Developed in Tsinghua University

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    @@ A research group from Tsinghua University led by Prof.Fan Shoushan,Member of the Chinese Academy of Sciences,and Jiang Kaili,associate professor of Physics,found that carbon nanotube thin film could act as a speaker once fed by audio frequency electric currents.These carbon nanotube loudspeakers are only tens of a nanometer thick,transparent,flexible and stretchable,which can be further tailored into any shape and size.These results have been published in the journal Nano Letter.

  8. Carbon Nanotube Thin Film Transistors for Flat Panel Display Application.

    Science.gov (United States)

    Liang, Xuelei; Xia, Jiye; Dong, Guodong; Tian, Boyuan; Peng, Lianmao

    2016-12-01

    Carbon nanotubes (CNTs) are promising materials for both high performance transistors for high speed computing and thin film transistors for macroelectronics, which can provide more functions at low cost. Among macroelectronics applications, carbon nanotube thin film transistors (CNT-TFT) are expected to be used soon for backplanes in flat panel displays (FPDs) due to their superior performance. In this paper, we review the challenges of CNT-TFT technology for FPD applications. The device performance of state-of-the-art CNT-TFTs are compared with the requirements of TFTs for FPDs. Compatibility of the fabrication processes of CNT-TFTs and current TFT technologies are critically examined. Though CNT-TFT technology is not yet ready for backplane production line of FPDs, the challenges can be overcome by close collaboration between research institutes and FPD manufacturers in the short term.

  9. Optical Properties of Pyrolytic Carbon Films Versus Graphite and Graphene.

    Science.gov (United States)

    Dovbeshko, Galyna I; Romanyuk, Volodymyr R; Pidgirnyi, Denys V; Cherepanov, Vsevolod V; Andreev, Eugene O; Levin, Vadim M; Kuzhir, Polina P; Kaplas, Tommi; Svirko, Yuri P

    2015-12-01

    We report a comparative study of optical properties of 5-20 nm thick pyrolytic carbon (PyC) films, graphite, and graphene. The complex dielectric permittivity of PyC is obtained by measuring polarization-sensitive reflectance and transmittance spectra of the PyC films deposited on silica substrate. The Lorentz-Drude model describes well the general features of the optical properties of PyC from 360 to 1100 nm. By comparing the obtained results with literature data for graphene and highly ordered pyrolytic graphite, we found that in the visible spectral range, the effective dielectric permittivity of the ultrathin PyC films are comparable with those of graphite and graphene.

  10. Characterization of ZnO thin films grown on different p-Si substrate elaborated by solgel spin-coating method

    Energy Technology Data Exchange (ETDEWEB)

    Chebil, W., E-mail: Chbil.widad@live.fr [Laboratoire Physico-chimie des Matériaux, Unité de Service Commun de Recherche “High resolution X-ray diffractometer”, Département de Physique, Université de Monastir, Faculté des Sciences de Monastir, Avenue de l’Environnement, 5019 Monastir (Tunisia); Fouzri, A. [Laboratoire Physico-chimie des Matériaux, Unité de Service Commun de Recherche “High resolution X-ray diffractometer”, Département de Physique, Université de Monastir, Faculté des Sciences de Monastir, Avenue de l’Environnement, 5019 Monastir (Tunisia); Institut Supérieur des Sciences Appliquées et de Technologie de Sousse, Université de Sousse (Tunisia); Fargi, A. [Laboratoire de Microélectronique et Instrumentation, Faculté des Sciences de Monastir, Université de Monastir, Avenue de l’environnement, 5019 Monastir (Tunisia); Azeza, B.; Zaaboub, Z. [Laboratoire Micro-Optoélectroniques et Nanostructures, Faculté des Sciences de Monastir, Université de Monastir, Avenue de l' environnement, 5019 Monastir (Tunisia); and others

    2015-10-15

    Highlights: • High quality ZnO thin films grown on different p-Si substrates were successful obtained by sol–gel process. • PL measurement revealed that ZnO thin film grown on porous Si has the better optical quality. • I–V characteristics for all heterojunctions exhibit successful diode formation. • The diode ZnO/PSi shows a better photovoltaic effect under illumination with a maximum {sub Voc} of 0.2 V. - Abstract: In this study, ZnO thin films are deposited by sol–gel technique on p-type crystalline silicon (Si) with [100] orientation, etched silicon and porous silicon. The structural analyses showed that the obtained thin films were polycrystalline with a hexagonal wurtzite structure and preferentially oriented along the c-axis direction. Morphological study revealed the presence of rounded and facetted grains irregularly distributed on the surface of all samples. PL spectra at room temperature revealed that ZnO thin film grown on porous Si has a strong UV emission with low defects in the visible region comparing with ZnO grown on plat Si and etched Si surface. The heterojunction parameters were evaluated from the (I–V) under dark and illumination at room temperature. The ideality factor, barrier height and series resistance of heterojunction grown on different p-Si substrates are determined by using different methods. Best electrical properties are obtained for ZnO layer deposited on porous silicon.

  11. Effects of Annealing Ambient on the Characteristics of LaAlO3 Films Grown by Atomic Layer Deposition

    Science.gov (United States)

    Zhao, Lu; Liu, Hong-xia; Wang, Xing; Fei, Chen-xi; Feng, Xing-yao; Wang, Yong-te

    2017-02-01

    We investigated the effects of different annealing ambients on the physical and electrical properties of LaAlO3 films grown by atomic layer deposition. Post-grown rapid thermal annealing (RTA) was carried out at 600 °C for 1 min in vacuum, N2, and O2, respectively. It was found that the chemical bonding states at the interfacial layers (ILs) between LaAlO3 films and Si substrate were affected by the different annealing ambients. The formation of IL was enhanced during the RTA process, resulting in the decrease of accumulation capacitance, especially in O2 ambient. Furthermore, based on the capacitance-voltage characteristics of LaAlO3/Si MIS capacitors, positive V FB shifting tendency could be observed, indicating the decrease of positive oxide charges. Meanwhile, both trapped charge density and interface trap density showed decreased trends after annealing treatments. In addition, RTA process in various gaseous ambients can reduce the gate leakage current due to the enhancement of valence band offset and the reduction of defects in the LaAlO3/Si structure in varying degrees.

  12. Characterization of diamond-like nanocomposite thin films grown by plasma enhanced chemical vapor deposition

    Science.gov (United States)

    Santra, T. S.; Liu, C. H.; Bhattacharyya, T. K.; Patel, P.; Barik, T. K.

    2010-06-01

    Diamond-like nanocomposite (DLN) thin films, comprising the networks of a-C:H and a-Si:O were deposited on pyrex glass or silicon substrate using gas precursors (e.g., hexamethyldisilane, hexamethyldisiloxane, hexamethyldisilazane, or their different combinations) mixed with argon gas, by plasma enhanced chemical vapor deposition technique. Surface morphology of DLN films was analyzed by atomic force microscopy. High-resolution transmission electron microscopic result shows that the films contain nanoparticles within the amorphous structure. Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy, and x-ray photoelectron spectroscopy (XPS) were used to determine the structural change within the DLN films. The hardness and friction coefficient of the films were measured by nanoindentation and scratch test techniques, respectively. FTIR and XPS studies show the presence of CC, CH, SiC, and SiH bonds in the a-C:H and a-Si:O networks. Using Raman spectroscopy, we also found that the hardness of the DLN films varies with the intensity ratio ID/IG. Finally, we observed that the DLN films has a better performance compared to DLC, when it comes to properties like high hardness, high modulus of elasticity, low surface roughness and low friction coefficient. These characteristics are the critical components in microelectromechanical systems (MEMS) and emerging nanoelectromechanical systems (NEMS).

  13. Random lasing of ZnO thin films grown by pulsed-laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Cachoncinlle, C., E-mail: christophe.cachoncinlle@univ-orleans.fr [GREMI, UMR 7344 CNRS—Université Orléans, 45067 Orléans Cedex 2 (France); Hebert, C.; Perrière, J. [Sorbonne Universités, UPMC Université Paris 06, UMR 7588, INSP, 75005 Paris (France); CNRS, UMR 7588, INSP, 75005 Paris (France); Nistor, M. [NILPRP, L 22 PO Box. MG-36, 77125 Bucharest—Magurele (Romania); Petit, A.; Millon, E. [GREMI, UMR 7344 CNRS—Université Orléans, 45067 Orléans Cedex 2 (France)

    2015-05-01

    Highlights: • Random lasing at RT in nanocrystalline ZnO PLD thin film (<100 nm). • Low optical pumping threshold (<30 kW cm{sup −2}) for UV random lasing. • Random lasing interpreted by the electron-hole plasma (EHP) model. - Abstract: Low-dimensional semiconductor structures on nanometer scale are of great interest because of their strong potential applications in nanotechnologies. We report here optical and structural properties on UV lasing in ZnO thin films. The ZnO films, 110 nm thick, were prepared using pulsed-laser deposition on c-cut sapphire substrates at 500 °C under 10{sup −2} oxygen pressure. The ZnO films are nearly stoichiometric, dense and display the wurtzite phase. The films are highly textured along the ZnO c-axis and are constituted of nanocrystallites. According to Hall measurements these films are conductive (0.11 Ω cm). Photoluminescence measurements reveals a so-called random lasing in the range 390 to 410 nm, when illuminating at 355 nm with a tripled frequency pulsed Nd-YAG laser. Such random lasing is obtained at rather low optical pumping, 45 kW cm{sup −2}, a value lower than those classically reported for pulsed-laser deposition thin films.

  14. Tribology of carbide derived carbon films synthesized on tungsten carbide

    Science.gov (United States)

    Tlustochowicz, Marcin

    Tribologically advantageous films of carbide derived carbon (CDC) have been successfully synthesized on binderless tungsten carbide manufactured using the plasma pressure compaction (P2CRTM) technology. In order to produce the CDC films, tungsten carbide samples were reacted with chlorine containing gas mixtures at temperatures ranging from 800°C to 1000°C in a sealed tube furnace. Some of the treated samples were later dechlorinated by an 800°C hydrogenation treatment. Detailed mechanical and structural characterizations of the CDC films and sliding contact surfaces were done using a series of analytical techniques and their results were correlated with the friction and wear behavior of the CDC films in various tribosystems, including CDC-steel, CDC-WC, CDC-Si3N4 and CDC-CDC. Optimum synthesis and treatment conditions were determined for use in two specific environments: moderately humid air and dry nitrogen. It was found that CDC films first synthesized at 1000°C and then hydrogen post-treated at 800°C performed best in air with friction coefficient values as low as 0.11. However, for dry nitrogen applications, no dechlorination was necessary and both hydrogenated and as-synthesized CDC films exhibited friction coefficients of approximately 0.03. A model of tribological behavior of CDC has been proposed that takes into consideration the tribo-oxidation of counterface material, the capillary forces from adsorbed water vapor, the carbon-based tribofilm formation, and the lubrication effect of both chlorine and hydrogen.

  15. Surface reactions of molecular and atomic oxygen with carbon phosphide films.

    Science.gov (United States)

    Gorham, Justin; Torres, Jessica; Wolfe, Glenn; d'Agostino, Alfred; Fairbrother, D Howard

    2005-11-01

    The surface reactions of atomic and molecular oxygen with carbon phosphide films have been studied using X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). Carbon phosphide films were produced by ion implantation of trimethylphosphine into polyethylene. Atmospheric oxidation of carbon phosphide films was dominated by phosphorus oxidation and generated a carbon-containing phosphate surface film. This oxidized surface layer acted as an effective diffusion barrier, limiting the depth of phosphorus oxidation within the carbon phosphide film to phosphorus atoms as well as the degree of phosphorus oxidation. For more prolonged AO exposures, a highly oxidized phosphate surface layer formed that appeared to be inert toward further AO-mediated erosion. By utilizing phosphorus-containing hydrocarbon thin films, the phosphorus oxides produced during exposure to AO were found to desorb at temperatures >500 K under vacuum conditions. Results from this study suggest that carbon phosphide films can be used as AO-resistant surface coatings on polymers.

  16. Studies on Gold Doped Lead Sulphide Thin Films Grown by Silar Technique

    Science.gov (United States)

    Preetha, K. C.; Murali, K. V.; Ragina, A. J.; Deepa, K.; Remadevi, T. L.

    2011-10-01

    Narrow band gap lead chalcogenide semiconductors have been widely used in various solid state midinfrared devices, such as light emitting devices (LEDs), laser diodes (LDs), detectors, and thermoelectric generators. In this article, the subject of research is the synthesis and characterization of PbS thin films doped with gold nanoparticles and nanorods. The successive ionic layer adsorption and reaction (SILAR) technique was used to deposit PbS nanostructured films on glass substrates. The optimization of various preparative parameters resulted in mirror like smooth, uniform films with metallic appearance. Characterization of the films has been carried out using x-ray diffraction, scanning electron microscopy, optical and electrical resistivity studies. Experimental results showed that the growth parameters and doping influenced the structure, the morphology and the optical properties of PbS films. X-ray diffraction studies confirmed the cubic nanocrystalline PbS phase formation with average crystallite size in the range 16-20 nm. Doping induced increase in the grain size, which is in agreement with SEM morphology also. EDAX studies confirmed the presence of lead, sulfur along with gold crystallites in the films. All films show higher absorption in the visible-near infrared region of the spectrum. The low transmittance in the UV-VIS region offers the possibility of using the samples as solar control coatings. The films are found to be p type and the electrical conductivity decreases slightly on doping. The observed conductivity is of the order of 10-8 (Ω cm)-1. The present work established the flexibility of SILAR method to prepare good quality thin films by cost effective technique.

  17. The Geometry Variation of As-Grown Carbon Coils with Ni Layer Thickness and Hydrogen Plasma Pretreatment

    Directory of Open Access Journals (Sweden)

    Young-Chul Jeon

    2013-01-01

    Full Text Available Carbon coils could be synthesized using C2H2/H2 as source gases and SF6 as an incorporated additive gas under thermal chemical vapor deposition system. Ni layer on SiO2 substrate was used as a catalyst for the formation of carbon coils. Ni powder was evaporated to form Ni layer on the substrate. The characteristics (formation densities, morphologies, and geometries of as-grown carbon coils on the substrate were investigated as a function of the evaporation time for Ni catalyst layer formation. By hydrogen plasma pretreatment prior to carbon coils synthesis reaction, the dominant formation of the nanosized wave-like geometry of carbon coils could be achieved. The characteristics of as-grown carbon coils with or without hydrogen plasma pretreatment process were investigated. The cause for the control of the carbon coils geometries from the microsized type to the nanosized wave-like one by H2 plasma pretreatment was discussed in association with the stress of Ni catalyst layer on the substrate.

  18. Schottky Junction Methane Sensors Using Electrochemically Grown Nanocrystalline-Nanoporous ZnO Thin Films

    Directory of Open Access Journals (Sweden)

    P. K. Basu

    2009-01-01

    Full Text Available Nanocrystalline-nanoporous ZnO thin films were prepared by an electrochemical anodization method, and the films were tested as methane sensors. It was found that Pd-Ag catalytic contacts showed better sensing performance compared to other noble metal contacts like Pt and Rh. The methane sensing temperature could be reduced to as low as 100∘C by sensitizing nanocrystalline ZnO thin films with Pd, deposited by chemical method. The sensing mechanism has been discussed briefly.

  19. Nitrogen doping in atomic layer deposition grown titanium dioxide films by using ammonium hydroxide

    Energy Technology Data Exchange (ETDEWEB)

    Kaeaeriaeinen, M.-L., E-mail: marja-leena.kaariainen@lut.fi; Cameron, D.C.

    2012-12-30

    Titanium dioxide films have been created by atomic layer deposition using titanium chloride as the metal source and a solution of ammonium hydroxide in water as oxidant. Ammonium hydroxide has been used as a source of nitrogen for doping and three thickness series have been deposited at 350 Degree-Sign C. A 15 nm anatase dominated film was found to possess the highest photocatalytic activity in all film series. Furthermore almost three times better photocatalytic activity was discovered in the doped series compared to undoped films. The doped films also had lower resistivity. The results from X-ray photoemission spectroscopy showed evidence for interstitial nitrogen in the titanium dioxide structure. Besides, there was a minor red shift observable in the thickest samples. In addition the film conductivity was discovered to increase with the feeding pressure of ammonium hydroxide in the oxidant precursor. This may indicate that nitrogen doping has caused the decrease in the resistivity and therefore has an impact as an enhanced photocatalytic activity. The hot probe test showed that all the anatase or anatase dominant films were p-type and all the rutile dominant films were n-type. The best photocatalytic activity was shown by anatase-dominant films containing a small amount of rutile. It may be that p-n-junctions are formed between p-type anatase and n-type rutile which cause carrier separation and slow down the recombination rate. The combination of nitrogen doping and p-n junction formation results in superior photocatalytic performance. - Highlights: Black-Right-Pointing-Pointer We found all N-doped and undoped anatase dominating films p-type. Black-Right-Pointing-Pointer We found all N-doped and undoped rutile dominating films n-type. Black-Right-Pointing-Pointer We propose that p-n junctions are formed in anatase-rutile mixture films. Black-Right-Pointing-Pointer We found that low level N-doping has increased TiO{sub 2} conductivity. Black

  20. Silicon carbide thin films as nuclear ceramics grown by laser ablation

    Energy Technology Data Exchange (ETDEWEB)

    Filipescu, M., E-mail: morarm@nipne.ro [National Institute for Laser, Plasma and Radiation Physics, P.O. Box MG 16, RO 77125, Magurele - Bucharest (Romania); Velisa, G. [Horia Hulubei National Institute of Physics and Nuclear Engineering, P.O.BOX MG-6, Bucharest - Magurele (Romania); Ion, V.; Andrei, A. [National Institute for Laser, Plasma and Radiation Physics, P.O. Box MG 16, RO 77125, Magurele - Bucharest (Romania); Scintee, N.; Ionescu, P. [Horia Hulubei National Institute of Physics and Nuclear Engineering, P.O.BOX MG-6, Bucharest - Magurele (Romania); Stanciu, S.G. [Center for Microscopy- Microanalysis and Information Processing, University ' POLITEHNICA' of Bucharest, Bucharest (Romania); Pantelica, D. [Horia Hulubei National Institute of Physics and Nuclear Engineering, P.O.BOX MG-6, Bucharest - Magurele (Romania); Dinescu, M. [National Institute for Laser, Plasma and Radiation Physics, P.O. Box MG 16, RO 77125, Magurele - Bucharest (Romania)

    2011-09-01

    Silicon carbide has been identified as a potential inert matrix candidate for advanced fuel. In this work, the growth of SiC thin films by pulsed laser deposition is reported. The stoicheometry and thickness of deposited films was investigated by non-Rutherford backscattering spectrometry. The influence of the deposition parameters, i.e. substrate temperature and laser fluence on the structure, morphology and optical properties of the deposited thin layers was studied. It was found that polycrystalline SiC thin films with uniform surface morphology were obtained at 873 K.

  1. Amorphization and recrystallization of epitaxial ReSi2 films grown on Si(100)

    Science.gov (United States)

    Kim, Kun HO; Bai, G.; Nicolet, MARC-A.; Mahan, John E.; Geib, Kent M.

    1991-01-01

    The effects of implantation damage and the chemical species of the implant on structural and electrical properties of epitaxial ReSi2 films on Si(100) implanted with Si-28 or Ar-40 ions, at doses ranging from 10 to the 13th/sq cm to 10 to the 15th/sq cm, were investigated using the backscattering spectrometry, XRD, and the van der Pauw techniques. Results showed that ion implantation produces damage in the film, which increases monotonically with dose; the resistivity of the film decreases monotonically with dose.

  2. Properties of CdS thin films grown by CBD as a function of thiourea concentration

    Energy Technology Data Exchange (ETDEWEB)

    Ximello-Quiebras, J.N.; Contreras-Puente, G.; Rueda-Morales, G.; Vigil, O. [Escuela Superior de Fisica y Matematicas-Instituto Politecnico Nacional, Edificio 9, U.P.A.L.M. 07738 DF (Mexico); Santana-Rodriguez, G. [Instituto de Investigaciones en Materiales, UNAM, CP 04510 (Mexico DF); Morales-Acevedo, A. [CINVESTAV-IPN, Depto. Ingenieria Electrica-SEES, Av. IPN 2508,CP 07360 Mexico, DF (Mexico)

    2006-04-14

    This paper reports a study of the growth rate and optical properties of CdS thin films prepared by the chemical bath deposition technique. For the deposition an aqueous solution of cadmium chloride, ammonium chloride, ammonium hydroxide and thiourea were used, the films were deposited on conducting glass (SnO{sub 2}: F). The growth kinetics is relatively fast when the quantity of thiourea is increased in the deposition solution and higher value of band gap is obtained (E{sub g}=2.44eV). The films show good transmittance in the visible region. (author)

  3. Thin-Film Solar Cells with InP Absorber Layers Directly Grown on Nonepitaxial Metal Substrates

    KAUST Repository

    Zheng, Maxwell

    2015-08-25

    The design and performance of solar cells based on InP grown by the nonepitaxial thin-film vapor-liquid-solid (TF-VLS) growth technique is investigated. The cell structure consists of a Mo back contact, p-InP absorber layer, n-TiO2 electron selective contact, and indium tin oxide transparent top electrode. An ex situ p-doping process for TF-VLS grown InP is introduced. Properties of the cells such as optoelectronic uniformity and electrical behavior of grain boundaries are examined. The power conversion efficiency of first generation cells reaches 12.1% under simulated 1 sun illumination with open-circuit voltage (VOC) of 692 mV, short-circuit current (JSC) of 26.9 mA cm-2, and fill factor (FF) of 65%. The FF of the cell is limited by the series resistances in the device, including the top contact, which can be mitigated in the future through device optimization. The highest measured VOC under 1 sun is 692 mV, which approaches the optically implied VOC of ≈795 mV extracted from the luminescence yield of p-InP. The design and performance of solar cells based on indium phosphide (InP) grown by the nonepitaxial thin-film vapor-liquid-solid growth technique is investigated. The cell structure consists of a Mo back contact, p-InP absorber layer, n-TiO2 electron selective contact, and an indium tin oxide transparent top electrode. The highest measured open circuit voltage (VOC) under 1 sun is 692 mV, which approaches the optically implied VOC of ≈795 mV extracted from the luminescence yield of p-InP.

  4. In situ grown carbon nanotubes on carbon paper as integrated gas diffusion and catalyst layer for proton exchange membrane fuel cells

    Energy Technology Data Exchange (ETDEWEB)

    Tang Zhe [Department of Materials Science and Engineering, National University of Singapore, 7 Engineering Drive 1, Singapore 117574 (Singapore); Poh, Chee Kok; Tian Zhiqun; Lin Jianyi [Institute of Chemical and Engineering Sciences, 1 Pesek Road, Jurong Island, Singapore 627833 (Singapore); Ng, How Y. [Division of Environmental Science and Engineering, 9 Engineering Drive 2, Singapore 117576 (Singapore); Chua, Daniel H.C., E-mail: msechcd@nus.edu.s [Department of Materials Science and Engineering, National University of Singapore, 7 Engineering Drive 1, Singapore 117574 (Singapore)

    2011-04-15

    In situ grown carbon nanotubes (CNTs) on carbon paper as an integrated gas diffusion layer (GDL) and catalyst layer (CL) were developed for proton exchange membrane fuel cell (PEMFC) applications. The effect of their structure and morphology on cell performance was investigated under real PEMFC conditions. The in situ grown CNT layers on carbon paper showed a tunable structure under different growth processes. Scanning electron microscopy (SEM) and Brunauer-Emmett-Teller (BET) demonstrated that the CNT layers are able to provide extremely high surface area and porosity to serve as both the GDL and the CL simultaneously. This in situ grown CNT support layer can provide enhanced Pt utilization compared with the carbon black and free-standing CNT support layers. An optimum maximum power density of 670 mW cm{sup -2} was obtained from the CNT layer grown under 20 cm{sup 3} min{sup -1} C{sub 2}H{sub 4} flow with 0.04 mg cm{sup -2} Pt sputter-deposited at the cathode. Furthermore, electrochemical impedance spectroscopy (EIS) results confirmed that the in situ grown CNT layer can provide both enhanced charge transfer and mass transport properties for the Pt/CNT-based electrode as an integrated GDL and CL, in comparison with previously reported Pt/CNT-based electrodes with a VXC72R-based GDL and a Pt/CNT-based CL. Therefore, this in situ grown CNT layer shows a great potential for the improvement of electrode structure and configuration for PEMFC applications.

  5. Electrical Transport Properties of Ni95Ti5 Catalyzed Multi wall Carbon Nanotubes Film

    Directory of Open Access Journals (Sweden)

    Zishan Husain Khan

    2009-01-01

    Full Text Available Carbon nanotubes (CNTs can be understood as one or more graphite sheets rolled up into a seamless cylinder. CNTs have gained much attention and scientific interest due to their unique properties and potential applications since their discovery in 1991. In the present work, we have deposited Ni95Ti5 film using thermal deposition method. Finally, the Ni95Ti5 catalyzed multi wall carbon nanotubes (MWNTs are grown on silicon substrate using low pressure chemical vapor deposition (LPCVD method and the electrical transport properties of this MWNTs film are studied over a temperature range (284–4K to explain the conduction mechanism. We have suggested two types of conduction mechanism for the entire temperature range. For the temperature region (284–220K, the conduction is due to thermally activated process, whereas the conduction takes place via variable range hopping (VRH for the temperature range of (220–4K. The VRH mechanism changes from three dimensions to two dimensions as we move down to the temperature below 50K. Therefore, the data for the temperature region (220–50K is plotted for three dimensional variable range hopping (3D VRH model and the two dimensional variable range hopping (2D VRH for lower temperature range of (50–4K. These VRH models give a good fit to the experimental data. Using these models, we have calculated various interesting electrical parameters such as activation energy, density of states, hopping distance and hopping energy.

  6. Extended width in discontinuously connected polymer-free carbon nanotubes grown between electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Chang, Wen-Teng, E-mail: wtchang@nuk.edu.tw; Yang, Fu-Siang

    2015-02-15

    Polymer-free carbon nanotubes (CNTs) grown between single-gap (SG) and interdigital-gap (IG) electrodes were used to develop miniature strain gauges. The strain and stress of the gauges were approximated according to the distance lift of a screw on a cantilever silicon substrate. In our preliminary study, electrical characterization indicated the gauge factors (GFs) of SG and IG devices to be approximately 36 and 1500, respectively. This result suggests that an extended width in IG electrodes, generating a larger amount of CNTs, provides a smaller minimum tunneling distance than does the width in SG electrodes. The distance shift under a small distance is expected to generate a high ratio of tunneling resistance change. The sparser and denser distributions of CNTs in SG and IG electrodes probably caused the gauges to exhibit capacitive and inductive features, respectively. Despite having substantial GFs, the gauge may require improvement in packaging to resist environmental effects and the growth of homogeneous CNTs and, thus, be reproducible.

  7. Glutamate biosensor based on carbon nanowalls grown using plasma enhanced chemical vapor deposition

    Science.gov (United States)

    Tomatsu, Masakazu; Hiramatsu, Mineo; Kondo, Hiroki; Hori, Masaru

    2015-09-01

    Carbon nanowalls (CNWs) are composed of few-layer graphene standing almost vertically on the substrate. Due to the large surface area of vertical nanographene network, CNWs draw attention as platform for electrochemical sensing, biosensing and energy conversion applications. In this work, CNWs were grown on nickel substrate using inductively coupled plasma with methane/Ar mixture. After the CNW growth, the surface of CNWs was oxidized using Ar atmospheric pressure plasma to obtain super-hydrophilic surface. For the biosensing application, the surface of CNWs was decorated with platinum (Pt) nanoparticles by the reduction of hydrogen hexachloroplatinate (IV) solution. The resultant Pt particle size was estimated to be 3-4 nm. From the XPS analysis, pure Pt existed without being oxidized on the CNW surface. Electrochemical surface area of the Pt catalyst was evaluated by cyclic voltammetry. Pt-decorated CNWs will be used as an electrode for electrochemical glutamate biosensing. L-glutamate is one of the most important in the mammalian central nervous system, playing a vital role in many physiological processes. Nanoplatform based on vertical nanographene offers great promise for providing a new class of nanostructured electrodes for electrochemical sensing.

  8. Structural, optical, and electrical properties of tin sulfide thin films grown by spray pyrolysis

    Energy Technology Data Exchange (ETDEWEB)

    Calixto-Rodriguez, M. [Instituto de Ciencias Fisicas-Universidad Nacional Autonoma de Mexico, Apartado Postal 48-3, 62210, Cuernavaca, Morelos (Mexico)], E-mail: manuela@fis.unam.mx; Martinez, H. [Instituto de Ciencias Fisicas-Universidad Nacional Autonoma de Mexico, Apartado Postal 48-3, 62210, Cuernavaca, Morelos (Mexico); Sanchez-Juarez, A.; Campos-Alvarez, J. [Centro de Investigacion en Energia-Universidad Nacional Autonoma de Mexico, 62580, Temixco, Morelos (Mexico); Tiburcio-Silver, A. [Instituto Tecnologico de Toluca-SEP, Apartado Postal 20, 52176, Metepec 3, Estado de Mexico (Mexico); Calixto, M.E. [Consultant, Cuernavaca, Morelos (Mexico)

    2009-02-02

    Tin sulfide (SnS) thin films have been prepared by spray pyrolysis (SP) technique using tin chloride and N, N-dimethylthiourea as precursor compounds. Thin films prepared at different temperatures have been characterized using several techniques. X-ray diffraction studies have shown that substrate temperature (T{sub s}) affects the crystalline structure of the deposited material as well as the optoelectronic properties. The calculated optical band gap (E{sub g}) value for films deposited at T{sub s} = 320-396 deg. C was 1.70 eV (SnS). Additional phases of SnS{sub 2} at 455 deg. C and SnO{sub 2} at 488 deg. C were formed. The measured electrical resistivity value for SnS films was {approx} 1 x 10{sup 4} {omega}-cm.

  9. Layer-dependent supercapacitance of graphene films grown by chemical vapor deposition on nickel foam

    KAUST Repository

    Chen, Wei

    2013-03-01

    High-quality, large-area graphene films with few layers are synthesized on commercial nickel foams under optimal chemical vapor deposition conditions. The number of graphene layers is adjusted by varying the rate of the cooling process. It is found that the capacitive properties of graphene films are related to the number of graphene layers. Owing to the close attachment of graphene films on the nickel substrate and the low charge-transfer resistance, the specific capacitance of thinner graphene films is almost twice that of the thicker ones and remains stable up to 1000 cycles. These results illustrate the potential for developing high-performance graphene-based electrical energy storage devices. © 2012 Elsevier B.V. All rights reserved.

  10. Characterization of (100)-orientated diamond film grown by HFCVD method with a positive DC bias voltage

    Institute of Scientific and Technical Information of China (English)

    MA Ying; WANG Lin-jun; LIU Jian-min; SU Qing-feng; XU Run; PENG Hong-yan; SHI Wei-min; XIA Yi-ben

    2006-01-01

    The (100)-orientated diamond film was deposited by hot-filament chemical vapor deposition (HFCVD) technology with a positive DC bias voltage. The morphology,X-ray diffraction (XRD),RAMAN spectrum and dark current versus applied voltage characteristics analysis show that the positive dc bias can increase the nucleation density and (100)-orientated growth,making the growth of the high quality diamond film easier and cheaper than using other methods.

  11. Continuous Ultra-Thin MOS2 Films Grown by Low-Temperature Physical Vapor Deposition (Postprint)

    Science.gov (United States)

    2014-07-01

    films are composed of nano -scale domains with strong chemical binding between domain boundaries, allowing lift-off from the substrate and electronic...process yields materials with key optical and electronic properties identical to exfoliated layers. The films are composed of nano -scale domains with...with a layered atomic structure giving rise to remarkable me- chanical (e.g., low shear strength for solid lubrication )1 and catalytic (e.g

  12. Synthesis and Characterization of Magnetite/Carbon Nanocomposite Thin Films for Electrochemical Applications

    Institute of Scientific and Technical Information of China (English)

    Suh Cem Pang; Wai Hwa Khoh; Suk Fun Chin

    2011-01-01

    Stable colloidal suspension of magnetite/starch nanocomposite was prepared by a facile and aqueous-based chemical precipitation method, Magnetite/carbon nanocomposite thin films were subsequently formed upon carbonization of the starch component by heat treatment under controlled conditions. The initial content of native sago starch as the carbon source was found to affect the microstructure and electrochemical properties of the resulted magnetite/carbon nanocomposite thin films, A specific capacitance of 124 F/g was achieved for the magnetite/carbon nanocomposite thin films as compared to that of 82 F/g for pure magnetite thin films in Na2SO4 aqueous electrolyte.

  13. Graphene-carbon nanotube hybrid materials and use as electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Tour, James M.; Zhu, Yu; Li, Lei; Yan, Zheng; Lin, Jian

    2016-09-27

    Provided are methods of making graphene-carbon nanotube hybrid materials. Such methods generally include: (1) associating a graphene film with a substrate; (2) applying a catalyst and a carbon source to the graphene film; and (3) growing carbon nanotubes on the graphene film. The grown carbon nanotubes become covalently linked to the graphene film through carbon-carbon bonds that are located at one or more junctions between the carbon nanotubes and the graphene film. In addition, the grown carbon nanotubes are in ohmic contact with the graphene film through the carbon-carbon bonds at the one or more junctions. The one or more junctions may include seven-membered carbon rings. Also provided are the formed graphene-carbon nanotube hybrid materials.

  14. Preparation and characterization of TiO{sub 2} thin films grown by RF magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Selmi, M.; Chaabouni, F.; Abaab, M.; Rezig, B. [Photovoltaic and Semiconductor Materials Laboratory, Enit (Tunisia)

    2008-07-01

    Titanium dioxide (TiO{sub 2}) thin films were obtained by RF sputtering technique. The samples were deposited on glass and p- silicon substrates at an argon flow rate of 4.9 sccm and at room temperature during 4 h. In this work, the influences of RF power density and annealing temperature on properties of obtained thin films were investigated. The morphological, structural and optical properties were studied by Atomic Force Microscope (AFM), X-ray Diffractometer and UV-VIS-NIR spectrophotometer respectively. A high transmission (about 80%) in the visible region, crystalline structure and a direct band gap (between 3.4 and 3.5 eV) were ob- served by the measurements. Thin films were annealed at different temperatures (from 300 to 500 C) during 30 minutes in order to investigate the annealing effect on properties of TiO{sub 2} thin films. The refractive index and the roughness increase with increasing annealing temperature. The results of this work suggest that the properties of TiO{sub 2} thin films are sensitive to sputtering parameters. It is possible to obtain sputter-deposited TiO{sub 2} films at room temperature, without using reactive oxygen, with a good predominance of anatase (101) structure after the annealing at 400 C. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  15. Dislocation Reduction Mechanisms in Gallium Nitride Films Grown by Canti-Bridge Epitaxy Method

    Institute of Scientific and Technical Information of China (English)

    XING Zhi-Gang; WANG Jing; PEI Xiao-Jiang; WAN Wei; CHEN Hong; ZHOU Jun-Ming

    2007-01-01

    @@ By using the special maskless V-grooved c-plane sapphire as the substrate, we previously developed a novel GaN LEO method, or the so-called canti-bridge epitaxy (CBE), and consequently wing-tilt-free GaN films were obtained with low dislocation densities, with which all the conventional difficulties can be overcome [J. Vacuum Sci.Technol. B 23 (2005) 2476]. Here the evolution manner of dislocations in the CBE GaN films is investigated using transmission electron microscopy. The mechanisms of dislocation reduction are discussed. Dislocation behaviour is found to be similar to that in the conventional LEO GaN films except the enhanced dislocation-combination at the coalescence boundary that is a major dislocation-reduction mechanism for the bent horizontal-propagating dislocations in the CBE GaN films. The enhancement of this dislocation-combination probability is believed to result from the inclined shape and the undulate morphology of the sidewalls, which can be readily obtained in a wide range of applicable film-growth conditions during the GaN CBE process. Further development of the GaN CBE method and better crystal-quality of the GaN film both are expected.

  16. Fabrication and characterization of borocarbide thin films grown by in-situ process

    CERN Document Server

    Arisawa, S; Togano, K

    1999-01-01

    We have reported on the fabrication of thin films of YNi sub 2 B sub 2 C for the first time. The process, however, requires the post-annealing at 1050 .deg. C. It is preferable to avoid such a high temperature for practical device applications and we are aiming at establishing an in-situ process at lower temperatures. To obtain films with higher T sub c , it is very important to know the relationship between what we choose as substrates and what we get on them. Three kinds of substrates, polished MgO, unpolished MgO, and polished SrTiO sub 3 were adopted. As for former 2 kinds of substates, superconductive films were successfully fabricated with the T sub c of approx 11K. Further, we discuss the fabrication of thin films of YPd sub 2 B sub 2 C on SrTiO sub 3 substrate. We tried to synthesize the films of the Pd system by RF sputtering technique as well. So far, it is uncertain whether or not the 1221 phase exists in the films. However, the slight reduction of the resistance was observed at 23 K, which is almo...

  17. The effect of deposition parameters on the phase of TiO{sub 2} films grown by RF magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Lim, Ji Chon; Song, Kyu Jeong [Chonbuk National University, Jeonju (Korea, Republic of); Park, Chan [Seoul National University, Seoul (Korea, Republic of)

    2014-12-15

    TiO{sub 2} thin films were deposited on Si substrates by using conventional radio-frequency (RF) magnetron sputtering with either metallic Ti or TiO{sub 2} targets, and the effect of the deposition parameters (substrate temperature (T{sub s}), RF sputtering power, gas flow ratio of O{sub 2}/(Ar+O{sub 2}) and deposition time) on the phase of the film was investigated. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to obtain information on the phase of the films and on the surface image/thickness of films, respectively. TiO{sub 2} films deposited at a T{sub s} higher than 300 .deg. C by using a metallic Ti target showed the dominant presence of the rutile phase. For films grown at a constant T{sub s} of 300 .deg. C with different gas flow ratios of O{sub 2}/(Ar+O{sub 2}), the amount of the rutile phase gradually decreased as the oxygen gas flow was decreased. The anatase phase, however, was formed when the O{sub 2}/(Ar+O{sub 2}) was 0.2. On the other hand, for TiO{sub 2} films deposited at T{sub s}'s between 50 .deg. C and 200 .deg. C with an O{sub 2}/(Ar+O{sub 2}) of 0.1 by using a TiO{sub 2} target, both the anatase and the rutile phases gradually decreased as the T{sub s} was increased. For TiO{sub 2} films deposited with various gas flow ratios of O{sub 2}/(Ar+O{sub 2}) between 0 and 0.4 at a constant T{sub s} of 200 .deg. C by using a TiO{sub 2} target, the anatase phase gradually decreased, but the rutile phase gradually increased, as the gas flow ratio was increased.

  18. Deposition and characterization of carbon nanotubes (CNTS) based films for sensing applications

    Science.gov (United States)

    Dissanayake, Amila C.

    The advent of carbon nanotubes (CNTs) has opened up lot of novel applications because of their unique electrical and mechanical properties. CNTs are well known material for its exceptional electrical, mechanical, optical, thermal and chemical properties. A single-wall nanotube (SWNT) can be either semiconducting, metallic or semi-metallic, based on its chirality and diameter. SWNTs can be used in transistor device as active channels due to high electron mobility (~10000 cm2/(V s), electrical interconnects, nano-scale circuits, field-emission displays, light-emitting devices and thermal heat sinks due to low resistivity, high current density (~109A cm-2 ) and high thermal conductivity (~3500 W m-1). Further, their high Young's modulus and fracture stress is suitable for various sensing applications such as strain/pressure and use in chemical/biological sensors. This work mainly involves the deposition of CNT-based films following two different methods via a conventional microwave chemical vapor deposition (MWCVD) and spinning CNT-composites, and explored the possibility of using CNT-based films in strain gauge applications. Deposited films are characterized and analyzed for their structure, microstructure, composition and electrical properties. Rutherford Backscattering Spectrometry (RBS), X-ray Reflectivity (XRR), Scanning Electron Microscopy (SEM), X-ray Diffraction (XRD), X-ray Photoelectron Spectroscopy (XPS), Atomic Force Microscopy (AFM) and electrical impedance measurement techniques are used to characterize the films prepared by both the above mentioned methods. The synthesis/deposition process is improved based on the observed films properties. A carbon nanotube forest grown on the Si (100) substrate with Ni as a catalyst using CVD system shows an amorphous nature due to loss of catalytic activity of Ni nano-islands. XPS and RBS data show Ni nano-particles diffused into the Si substrate and surface layer of Ni particles turns out to nickel silicide. The

  19. Effects of Precursor Concentration on Structural and Optical Properties of ZnO Thin Films Grown on Muscovite Mica Substrates by Sol-Gel Spin-Coating.

    Science.gov (United States)

    Kim, Younggyu; Leem, Jae-Young

    2016-05-01

    The structural and optical properties of the ZnO thin films grown on mica substrates for different precursor concentrations were investigated. The surface morphologies of all the samples indicated that they consisted of granular structures with spherical nano-sized crystallites. The thickness of the ZnO thin films increased significantly and the optical band gap exhibited a blue shift with an increase in the precursor concentration. It is remarkable that the highest I(NBE)/I(DLE) ratio was observed for the ZnO thin film with 0.8 M precursor concentration, even though cracks formed on the surface of this film.

  20. Characterization and antibacterial activity of nanocrystalline Mn doped Fe2O3 thin films grown by successive ionic layer adsorption and reaction method

    OpenAIRE

    2016-01-01

    Successive ionic layer adsorption and reaction (SILAR) method have been successfully employed to grow nanocrystalline Mn doped α-Fe2O3 thin films onto glass substrates. The structural analysis revealed that, the films are nanocrystalline in nature with rhombohedral structure. The optical studies showed that α-Fe2O3 thin film exhibits 3.02 eV band gap energy and it decreases to 2.95 eV as the Mn doping percentage in it was increased from 0 to 8 wt.%. The SILAR grown α-Fe2O3 film exhibits antib...

  1. Bicontinuous Porous Carbon Films Templated with ABC Triblock Copolymers

    Science.gov (United States)

    Cavicchi, Kevin; Deng, Guodong; Vogt, Bryan

    2014-03-01

    Mesoporous carbons are useful for a range of applications such as separation and catalysis. A route to prepare porous materials is through cooperative self-assembly of a carbon precursor (e.g. phenolic resin) and a block copolymer, in which the precursor is selectively soluble, to drive mesophase formation. Typical soft templating uses AB or ABA block copolymers, which form classical morphologies, such as spheres, cylinders, and lamellae. Switching to an ABC type block copolymer provides greater flexibility in the design of the morphology potentially opening up larger processing windows for complex structures, such as bicontinuous morphologies. This presentation will discuss efforts to prepare bicontinuous porous carbon thin films using an ABC triblock copolymer of poly(ethylene oxide)-block-poly(ethyl acrylate)-block-polystyrene via spin-coating and a series of thermal annealing steps. It will be shown that direct thermal annealing can produce high porosity (~60%) carbon fiber networks. In addition, adding a solvent annealing step prior to the thermal annealing steps is able to produce longer range order structures with a small window of an ordered bicontinuous morphology. These high porosity films with organized fibers are promising for energy and separation applications.

  2. Flexible Carbon Nanotube Films for High Performance Strain Sensors

    Directory of Open Access Journals (Sweden)

    Olfa Kanoun

    2014-06-01

    Full Text Available Compared with traditional conductive fillers, carbon nanotubes (CNTs have unique advantages, i.e., excellent mechanical properties, high electrical conductivity and thermal stability. Nanocomposites as piezoresistive films provide an interesting approach for the realization of large area strain sensors with high sensitivity and low manufacturing costs. A polymer-based nanocomposite with carbon nanomaterials as conductive filler can be deposited on a flexible substrate of choice and this leads to mechanically flexible layers. Such sensors allow the strain measurement for both integral measurement on a certain surface and local measurement at a certain position depending on the sensor geometry. Strain sensors based on carbon nanostructures can overcome several limitations of conventional strain sensors, e.g., sensitivity, adjustable measurement range and integral measurement on big surfaces. The novel technology allows realizing strain sensors which can be easily integrated even as buried layers in material systems. In this review paper, we discuss the dependence of strain sensitivity on different experimental parameters such as composition of the carbon nanomaterial/polymer layer, type of polymer, fabrication process and processing parameters. The insights about the relationship between film parameters and electromechanical properties can be used to improve the design and fabrication of CNT strain sensors.

  3. TiN films grown by reactive magnetron sputtering with enhanced ionization at low discharge pressures

    Energy Technology Data Exchange (ETDEWEB)

    Kadlec, S.; Musil, J. (Ceskoslovenska Akademie Ved, Prague (Czechoslovakia). Fyzikalni Ustav); Valvoda, V. (Karlova Univ., Prague (Czechoslovakia). Fakulta Matematicko-Fyzikalni); Muenz, W.-D.; Petersein, H.; Schroeder, J. (Leybold A.G., Hanau (Germany, F.R.))

    1990-01-01

    TiN films were produced by reactive magnetron sputtering at a discharge pressure of 0.09 Pa on substrates placed 200 mm away from the magnetron target, using a sputtering system with enhanced ionization by means of multipolar magnetic confinement. The effects on film properties are reported for two ranges of values: an external substrate bias U{sub s} of from -35 to -150 V, and a floating potential U{sub fl} of from -24 to -45 V. All films show a dense microstructure, a smooth surface and shiny golden color. The microhardness HV is between 2000 and 2600 kg mm{sup -1}, a high critical load of up to L{sub c} = 58 N in scratch tests and the coefficient of friction against a cemented carbide counter ball is between 0.12 and 0.22. The color co-ordinated L{sup *}, A{sup *} and B{sup *} depend on the bias voltage. The brightness L{sup *} reaches 78 CIELAB units. The properties of films prepared at U{sub s} between -60 and -150 V compare well to those of ion-plated films. The films prepared at U{sub s} < 60 V, or at any of the values for U{sub fl}, exhibit comparatively low compressive microstresses down to 2.2 GPa and low microstrain down to 3.5 x 10{sup -3}. These films show single (111), (200) or (220) textures, or a mixed (200) + (111) texture, depending on the U value at which they were prepared. (author).

  4. Nanocomposite fibers and film containing polyolefin and surface-modified carbon nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Chu,Benjamin (Setauket, NY); Hsiao, Benjamin S. (Setauket, NY)

    2010-01-26

    Methods for modifying carbon nanotubes with organic compounds are disclosed. The modified carbon nanotubes have enhanced compatibility with polyolefins. Nanocomposites of the organo-modified carbon nanotubes and polyolefins can be used to produce both fibers and films having enhanced mechanical and electrical properties, especially the elongation-to-break ratio and the toughness of the fibers and/or films.

  5. Out-of-plane magnetic anisotropy in columnar grown Fe-Ni films

    Science.gov (United States)

    Pires, M. J. M.; Araújo Filho, M. S.; Tedesco, J. C. G.; Ardisson, J. D.; Macedo, W. A. A.

    2014-10-01

    Polycrystalline thin films usually present magnetic anisotropy resulting from a conjunction of textures, residual stresses, surface effects, and magnetic dipole distribution. The shape anisotropy, which is caused by the magnetic dipole distribution, is dominant in most of the cases, and it forces the occurrence of in-plane easy axes for the magnetization. Contrary to this common expectation, we have found predominant out-of-plane easy axes in a series of Fe-Ni thin films produced by DC sputtering. Films with different thicknesses, from 40 to 1000 nm, and different deposition temperatures have been tested and show similar results. These unusual characteristics are results of a particular columnar structure formed during the films growth. The magnetic characterization of the samples has been done by Mössbauer spectroscopy, magnetometry, and ferromagnetic resonance. The unusual anisotropy observed is not believed to be uniform along the film thickness. This interpretation comes from the comparison of the experimental results with hysteresis obtained by micromagnetic simulations. Five distinct configurations for the anisotropies have been simulated for this comparison.

  6. Influence of annealing temperature on ZnO thin films grown by dual ion beam sputtering

    Indian Academy of Sciences (India)

    Sushil Kumar Pandey; Saurabh Kumar Pandey; Vishnu Awasthi; Ashish Kumar; Uday P Deshpande; Mukul Gupta; Shaibal Mukherjee

    2014-08-01

    We have investigated the influence of in situ annealing on the optical, electrical, structural and morphological properties of ZnO thin films prepared on -type Si(100) substrates by dual ion beam sputtering deposition (DIBSD) system. X-ray diffraction (XRD) measurements showed that all ZnO films have (002) preferred orientation. Full-width at half-maximum (FWHM) of XRD from the (002) crystal plane was observed to reach to a minimum value of 0.139° from ZnO film, annealed at 600 °C. Photoluminescence (PL) measurements demonstrated sharp near-band-edge emission (NBE) at ∼ 380 nm along with broad deep level emissions (DLEs) at room temperature. Moreover, when the annealing temperature was increased from 400 to 600 °C, the ratio of NBE peak intensity to DLE peak intensity initially increased, however, it reduced at further increase in annealing temperature. In electrical characterization as well, when annealing temperature was increased from 400 to 600 °C, room temperature electron mobility enhanced from 6.534 to 13.326 cm2/V s, and then reduced with subsequent increase in temperature. Therefore, 600 °C annealing temperature produced good-quality ZnO film, suitable for optoelectronic devices fabrication. X-ray photoelectron spectroscopy (XPS) study revealed the presence of oxygen interstitials and vacancies point defects in ZnO film annealed at 400 °C.

  7. Peculiarities of the initial stages of carbonization processes in polyimide-based nanocomposite films containing carbon nanoparticles

    Directory of Open Access Journals (Sweden)

    I.V. Gofman

    2015-12-01

    Full Text Available Carbonization of the polyimide-based composite films containing carbon nanoparticles, namely nanofibers and nanocones/disks, in the temperature range 500–550°C was studied and the kinetics of the initial stage of carbonization and the effect of the filler on the mechanical properties of the carbonized films were evaluated. Two polyimides (PIs characterized by different macrochains’ rigidity and different degrees of ordering of the intermolecular structure were used. The character of the nanofiller’s action on the kinetics of the carbonization process depends on the heating rate. In this work, the intensity of the destruction of the PI matrix of the composite films was shown to be slightly higher than that of films of the same polymers with no filler. The introduction of the carbon nanoparticles into both PIs provokes the increase in the ultimate deformation values of the partially carbonized films, while the carbonization of the unfilled PI films yields the brittle materials. The Young’s modulus values of the materials based on the rigid-rod PI do not increase after carbonization, while those for compositions based on the PI with semi-rigid chains increase substantially. Carbon nanocones/disks are characterized by the best compatibility with matrix PIs in comparison with carbon nanofibers.

  8. Impact of film thickness on the morphology of mesoporous carbon films using organic-organic self-assembly.

    Science.gov (United States)

    Vogt, Bryan D; Chavez, Vicki L; Dai, Mingzhi; Arreola, M Regina Croda; Song, Lingyan; Feng, Dan; Zhao, Dongyuan; Perera, Ginusha M; Stein, Gila E

    2011-05-03

    Mesoporous polymer and carbon thin films are prepared by the organic-organic self-assembly of an oligomeric phenolic resin with an amphiphilic triblock copolymer template, Pluronic F127. The ratio of resin to template is selected such that a body-centered cubic (Im3m) mesostructure is formed in the bulk. However, well-ordered mesoporous films are not always obtained for thin films (body-centered cubic symmetry with a preferential orientation of the closest-packed (110) plane parallel to the substrate. Film thickness and initial composition of the carbonizable precursors in the template are critical factors in determining the morphology of mesoporous carbon films. These results provide insight into why difficulties have been reported in producing ultrathin ordered mesoporous carbon films using cooperative organic-organic self-assembly.

  9. Fabrication of periodical surface structures by picosecond laser irradiation of carbon thin films: transformation of amorphous carbon in nanographite

    Science.gov (United States)

    Popescu, C.; Dorcioman, G.; Bita, B.; Besleaga, C.; Zgura, I.; Himcinschi, C.; Popescu, A. C.

    2016-12-01

    Thin films of carbon were synthesized by ns pulsed laser deposition in vacuum on silicon substrates, starting from graphite targets. Further on, the films were irradiated with a picosecond laser source emitting in visible at 532 nm. After tuning of laser parameters, we obtained a film surface covered by laser induced periodical surface structures (LIPSS). They were investigated by optical, scanning electron and atomic force microscopy. It was observed that changing the irradiation angle influences the LIPSS covered area. At high magnification it was revealed that the LIPSS pattern was quite complex, being composed of other small LIPSS islands, interconnected by bridges of nanoparticles. Raman spectra for the non-irradiated carbon films were typical for a-C type of diamond-like carbon, while the LIPSS spectra were characteristic to nano-graphite. The pristine carbon film was hydrophilic, while the LIPSS covered film surface was hydrophobic.

  10. Preparation and characterization of LaNiO3 films grown by metal–organic deposition

    Indian Academy of Sciences (India)

    Yao Wang; Guofang Zhang; Chengshan Li; Guo Yan; Yafeng Lu

    2011-12-01

    We have investigated the synthesis and characterization of LaNiO3 (LNO) layers deposited on YSZ (100) substrate by metal–organic deposition (MOD). Texture, morphology and electrical properties of the LaNiO3 films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM) and electrical resistivity measurement. It has been found that the formation of (ℎ00) orientation depends on pyrolysis temperature, annealing temperature and thickness of LaNiO3 layers. The LaNiO3 films prepared under optimal condition indicate highly (ℎ00) orientation and a rather smooth surface. The LaNiO3 films show a metallic behaviour in the measured temperature range.

  11. Structure and optical properties of ZnS thin films grown by glancing angle deposition

    Science.gov (United States)

    Wang, Sumei; Fu, Xiaoyong; Xia, Guodong; Wang, Jianguo; Shao, Jianda; Fan, Zhengxiu

    2006-10-01

    The glancing angle deposition (GLAD) technique was used to deposit ZnS films by electron beam evaporation method. The cross sectional scanning electron microscopy (SEM) image illustrated a highly orientated microstructure composed of slanted column. The atomic force microscopy (AFM) analysis indicated that incident flux angle had significant effects on the nodule size and surface roughness. Under identical nominal thickness, the actual thickness of the GLAD films is related to the incident flux angle. The refractive index and in-plane birefringence of the GLAD ZnS films were discussed, and the maximum birefringence Δ n = 0.036 was obtained at incident flux angle of α = 80°. Therefore, the glancing angle deposition technique is a promising way to create a columnar structure with enhanced birefringent property.

  12. Modeling the transport properties of epitaxially grown thermoelectric oxide thin films using spectroscopic ellipsometry

    KAUST Repository

    Sarath Kumar, S. R.

    2012-02-01

    The influence of oxygen vacancies on the transport properties of epitaxial thermoelectric (Sr,La)TiO3 thin films is determined using electrical and spectroscopic ellipsometry (SE) measurements. Oxygen vacancy concentration was varied by ex-situ annealing in Ar and Ar/H2. All films exhibited degenerate semiconducting behavior, and electrical conductivity decreased (258–133 S cm−1) with increasing oxygen content. Similar decrease in the Seebeck coefficient is observed and attributed to a decrease in effective mass (7.8–3.2 me ), as determined by SE. Excellent agreement between transport properties deduced from SE and direct electrical measurements suggests that SE is an effective tool for studying oxide thin film thermoelectrics.

  13. Highly efficient Cu(In,Ga)Se2 solar cells grown on flexible polymer films.

    Science.gov (United States)

    Chirilă, Adrian; Buecheler, Stephan; Pianezzi, Fabian; Bloesch, Patrick; Gretener, Christina; Uhl, Alexander R; Fella, Carolin; Kranz, Lukas; Perrenoud, Julian; Seyrling, Sieghard; Verma, Rajneesh; Nishiwaki, Shiro; Romanyuk, Yaroslav E; Bilger, Gerhard; Tiwari, Ayodhya N

    2011-09-18

    Solar cells based on polycrystalline Cu(In,Ga)Se(2) absorber layers have yielded the highest conversion efficiency among all thin-film technologies, and the use of flexible polymer films as substrates offers several advantages in lowering manufacturing costs. However, given that conversion efficiency is crucial for cost-competitiveness, it is necessary to develop devices on flexible substrates that perform as well as those obtained on rigid substrates. Such comparable performance has not previously been achieved, primarily because polymer films require much lower substrate temperatures during absorber deposition, generally resulting in much lower efficiencies. Here we identify a strong composition gradient in the absorber layer as the main reason for inferior performance and show that, by adjusting it appropriately, very high efficiencies can be obtained. This implies that future manufacturing of highly efficient flexible solar cells could lower the cost of solar electricity and thus become a significant branch of the photovoltaic industry.

  14. Surface morphology and composition studies in InGaN/GaN film grown by MOCVD

    Institute of Scientific and Technical Information of China (English)

    Tao Tao; Han Ping; Shi Yi; Zheng Youdou; Zhang Zhao; Liu Lian; Su Hui; Xie Zili; Zhang Rong; Liu Bin; Xiu Xiangqian; Li Yi

    2011-01-01

    InGaN filmsweredepositedon(0001)sapphiresubstrates with GaN buffer layers under different growth temperatures by metalorganic chemical vapor deposition.The In-composition of InGaN film was approximately controlled by changing the growth temperature.The connection between the growth temperature,In content,surface morphology and defect formation was obtained by X-ray diffraction,scanning electron microscopy (SEM) and atomic force microscopy (AFM).Meanwhile,by comparing the SEM and AFM surface morphology images,we proposed several models of three different defects and discussed the mechanism of formation.The prominent effect of higher growth temperature on the quality of the InGaN films and defect control were found by studying InGaN films at various growth temperatures.

  15. High-Mobility Aligned Pentacene Films Grown by Zone-Casting

    DEFF Research Database (Denmark)

    Duffy, Claudia M.; Andreasen, Jens Wenzel; Breiby, Dag W.;

    2008-01-01

    We investigate the growth and field-effect transistor performance of aligned pentacene thin films deposited by zone-casting from a solution of unsubstituted pentacene molecules in a chlorinated solvent. Polarized optical microscopy shows that solution processed pentacene films grow as large......-of-plane 00n reflections up to at least the seventh order, and a pronounced in-plane anisotropy with the a-axis of the triclinic unit cell predominantly aligned parallel to the zone-casting direction and the ab-plane parallel to the substrate. The average charge carrier mobility of the zone-cast pentacene...... devices depends strongly on the underlying dielectric. Divinylsiloxane-bis-benzocyclobutene (BCB) resin is found to be a suitable gate dielectric allowing reproducible film deposition and high field-effect mobilities up to 0.4−0.7 cm2/(V s) and on/off ratios of 106−107. A small mobility anisotropy...

  16. Field-Emission Study of Multi-Walled Carbon Nanotubes Grown On Si Substrate by Low Pressure Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    J. Ali

    2011-01-01

    Full Text Available CNTs are synthesized by Low Pressure Chemical Vapor Deposition (LPCVD method at 600 °C. The Si substrate is coated with Fe, used as a catalyst, by RF- sputtering. The thickness of the catalyst film is measured to be approximately 15 nm. Three precursor gases Acetylene (C2H2, Ammonia (NH3 and Hydrogen (H2 with flow rates 15 sccm, 100 sccm and 100 sccm respectively are allowed to flow through the tube reactor for 20 minutes. The as grown CNTs sample was characterized by Scanning Electron Microscope (SEM. SEM images show that the diameter of as grown CNTs is in the range of 20-50 nm. Field emission properties of as grown sample have also been studied. The CNTs film shows good field emission with turn on field Eα = 2.10 V/μm at the current density of 4.59 mA/cm2 with enhancement factor β = 1.37 × 102.

  17. Characterization of CBD grown ZnO films with high c-axis orientation

    Energy Technology Data Exchange (ETDEWEB)

    Kahraman, S., E-mail: suleymanmku@gmail.com [Physics Department, Mustafa Kemal University, 31034 Hatay (Turkey); Bayansal, F.; Cetinkara, H.A.; Cakmak, H.M.; Gueder, H.S. [Physics Department, Mustafa Kemal University, 31034 Hatay (Turkey)

    2012-06-15

    Highly c-axis oriented ZnO films were deposited on seeded glass substrates. Successive ionic layer adsorption and reaction (SILAR) method and chemical bath deposition (CBD) method were used to obtain seed layers and ZnO films. To see the effects of seed layer and deposition time, structural (e.g. grain size, microstrain and dislocation density), morphological, and electrical (e.g. resistivity, activation energy) properties of the films were investigated by scanning electron microscopy, X-ray diffraction, and four point probe method. From the SEM images, resultant structures were found as well defined nanorods nearly perpendicular to the substrate surfaces and densely cover the substrates. The XRD patterns showed that ZnO films have hexagonal wurtzite structure with a preferred c-axis orientation along (002) plane. C-axis orientation was also supported by texture coefficient calculations. The lattice parameters of the structures were determined as a = 3.2268 A, b = 5.2745 A, {alpha} = {beta} = 90 Degree-Sign and {gamma} = 120 Degree-Sign . From the XRD patterns, it was revealed that, microstrain and dislocation density values of the structures decreased whereas grain size increased. This was attributed to enhancement occurred in lattice structure of the ZnO films. Activation energy values of the films were found in between 0.12 and 0.15 eV from the dark electrical resistivity-temperature characteristics in a temperature range of 300-500 K. - Highlights: Black-Right-Pointing-Pointer Hexagonal wurtzite structured ZnO nanorods (preferred orientation along (002) plane). Black-Right-Pointing-Pointer Electrical activation energies were calculated in between 0.12 and 0.15 eV. Black-Right-Pointing-Pointer Microstrain and dislocation density decreased with increasing deposition time. Black-Right-Pointing-Pointer Increasing deposition time was resulted in an increase in preferred orientation.

  18. Fluence dependent electrical conductivity in aluminium thin films grown by infrared pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Rebollar, Esther, E-mail: e.rebollar@csic.es [Instituto de Química Física Rocasolano, IQFR-CSIC, Serrano 19, 28006 Madrid (Spain); Martínez-Tong, Daniel E. [Instituto de Estructura de la Materia, IEM-CSIC, Serrano 121, 28006 Madrid (Spain); Sanz, Mikel; Oujja, Mohamed; Marco, José F. [Instituto de Química Física Rocasolano, IQFR-CSIC, Serrano 19, 28006 Madrid (Spain); Ezquerra, Tiberio A. [Instituto de Estructura de la Materia, IEM-CSIC, Serrano 121, 28006 Madrid (Spain); Castillejo, Marta [Instituto de Química Física Rocasolano, IQFR-CSIC, Serrano 19, 28006 Madrid (Spain)

    2016-11-30

    Highlights: • IR pulsed laser ablation of aluminium gives rise to smooth layers of several tens of nanometers. • Irradiation at fluences around 2.7 J/cm{sup 2} and above 7 J/cm{sup 2} resulted in deposition of amorphous aluminium oxide films and metallic aluminium films respectively. • Highly ionized species are more abundant in the ablation plumes generated at higher fluences. • It is possible to control by PLD the metal or dielectric character of the films. - Abstract: We studied the effect of laser fluence on the morphology, composition, structure and electric conductivity of deposits generated by pulsed laser ablation of a metallic aluminium target in vacuum using a Q-switched Nd:YAG laser (1064 nm, 15 ns). Upon irradiation for one hour at a repetition rate of 10 Hz, a smooth layer of several tens of nanometres, as revealed by atomic force microscopy (AFM) was deposited on glass. Surface chemical composition was determined by X-ray photoelectron spectroscopy, and to study the conductivity of deposits both I–V curves and conductive-AFM measurements were performed. Irradiation at fluences around 2.7 J/cm{sup 2} resulted in deposition of amorphous aluminium oxide films. Differently, at higher fluences above 7 J/cm{sup 2}, the films are constituted by metallic aluminium. Optical emission spectroscopy revealed that highly ionized species are more abundant in the ablation plumes generated at higher fluences. The results demonstrate the possibility to control by PLD the metal or dielectric character of the films.

  19. CZTS(e) thin films grown by chemical methods for photovoltaic application

    OpenAIRE

    Tombolato,

    2015-01-01

    Le kesteriti sono una classe di semiconduttori con un band gap diretto compresa tra 1,0 e 1,5 eV e un coefficiente di assorbimento dell'ordine di 10^4 cm^ -1 nello spettro visibile e durante gli ultimi vent’anni hanno ricevuto parecchia attenzione a causa della loro potenziale applicabilità come materiali a film sottile nel fotovoltaico. Un altro calcogenuro a film sottile, il CIGS, di composizione Cu2InxGa (1-x)Se2 è già prodotto a livello industriale, ma il costante aumento del prezzo dell...

  20. Multiferroic YCrO3 thin films grown on glass substrate: Resistive switching characteristics

    Science.gov (United States)

    Seo, Jeongdae; Ahn, Yoonho; Son, Jong Yeog

    2016-01-01

    Polycrystalline YCrO3 thin films were deposited on (111) Pt/Ta/glass substrates by pulsed laser deposition. The YCrO3 thin films exhibited good ferroelectric properties with remnant polarization of about 5 µC/cm2. Large leakage current was observed by I- V curve and ferroelectric hysteresis loop. The YCrO3 resistive random access memory (RRAM) capacitor showed unipolar switching behaviors with SET and RESET voltages higher than those of general NiO RRAM capacitors. [Figure not available: see fulltext.

  1. Stress generation in thermally grown oxide films. [oxide scale spalling from superalloy substrates

    Science.gov (United States)

    Kumnick, A. J.; Ebert, L. J.

    1981-01-01

    A three dimensional finite element analysis was conducted, using the ANSYS computer program, of the stress state in a thin oxide film thermally formed on a rectangular piece of NiCrAl alloy. The analytical results indicate a very high compressive stress in the lateral directions of the film (approximately 6200 MPa), and tensile stresses in the metal substrate that ranged from essentially zero to about 55 MPa. It was found further that the intensity of the analytically determined average stresses could be approximated reasonably well by the modification of an equation developed previously by Oxx for stresses induced into bodies by thermal gradients.

  2. Structural properties of Cu2O epitaxial films grown on c-axis single crystal ZnO by magnetron sputtering

    Science.gov (United States)

    Gan, J.; Gorantla, S.; Riise, H. N.; Fjellvâg, Ø. S.; Diplas, S.; Løvvik, O. M.; Svensson, B. G.; Monakhov, E. V.; Gunnæs, A. E.

    2016-04-01

    Epitaxial Cu2O films grown by reactive and ceramic radio frequency magnetron sputtering on single crystalline ZnO (0001) substrates are investigated. The films are grown on both O- and Zn-polar surface of the ZnO substrates. The Cu2O films exhibit a columnar growth manner apart from a ˜5 nm thick CuO interfacial layer. In comparison to the reactively sputtered Cu2O, the ceramic-sputtered films are less strained and appear to contain nanovoids. Irrespective of polarity, the Cu2O grown by reactive sputtering is observed to have (111)Cu2O||(0001)ZnO epitaxial relationship, but in the case of ceramic sputtering the films are found to show additional (110)Cu2O reflections when grown on O-polar surface. The observed CuO interfacial layer can be detrimental for the performance of Cu2O/ZnO heterojunction solar cells reported in the literature.

  3. A dense and strong bonding collagen film for carbon/carbon composites

    Energy Technology Data Exchange (ETDEWEB)

    Cao, Sheng; Li, Hejun, E-mail: lihejun@nwpu.edu.cn; Li, Kezhi; Lu, Jinhua; Zhang, Leilei

    2015-08-30

    Graphical abstract: - Highlights: • Significantly enhancement of biocompatibility on C/C composites by preparing a collagen film. • The dense and continuous collagen film had a strong bonding strength with C/C composites after dehydrathermal treatment (DHT) crosslink. • Numerous oxygen-containing functional groups formed on the surface of C/C composites without matrix damage. - Abstract: A strong bonding collagen film was successfully prepared on carbon/carbon (C/C) composites. The surface conditions of the modified C/C composites were detected by contact angle measurements, scanning electron microscope (SEM), X-ray photoelectron spectroscopy (XPS) and Raman spectra. The roughness, optical morphology, bonding strength and biocompatibility of collagen films at different pH values were detected by confocal laser scanning microscope (CLSM), universal test machine and cytology tests in vitro. After a 4-h modification in 30% H{sub 2}O{sub 2} solution at 100 °C, the contact angle on the surface of C/C composites was decreased from 92.3° to 65.3°. Large quantities of hydroxyl, carboxyl and carbonyl functional groups were formed on the surface of the modified C/C composites. Then a dense and continuous collagen film was prepared on the modified C/C substrate. Bonding strength between collagen film and C/C substrate was reached to 8 MPa level when the pH value of this collagen film was 2.5 after the preparing process. With 2-day dehydrathermal treatment (DHT) crosslinking at 105 °C, the bonding strength was increased to 12 MPa level. At last, the results of in vitro cytological test showed that this collagen film made a great improvement on the biocompatibility on C/C composites.

  4. Effect of annealing temperature on the optical loss and the optical constants of RF-magnetron sputtered carbon — nickel composite films

    Science.gov (United States)

    Dalouji, V.; Elahi, S. M.

    2014-03-01

    In this work, the optical properties of carbon — nickel films annealed at different temperatures (300-1000 °C) were investigated. The films were grown on quartz substrates by radio frequency magnetron co-sputtering at room temperature with a deposition time of 600 second. The optical transmittance spectra in the wavelength range 300-1000 nm were used to compute the refractive index by using the Swanepoel's method. The films annealed at 500 °C showed considerable optical loss due to optical absorption by nickel atoms and to scattering caused by surface roughness. However, the film annealed at 800 °C had a very small optical loss in spite of the high surface roughness. The dispersion curves of the refractive indices of the films had anomalous dispersion in the absorption region and normal dispersion in the transparent region. The dissipation rate of the electromagnetic wave at 500 °C was shown to have maximum value.

  5. Growth of a single-wall carbon nanotube film and its patterning as an n-type field effect transistor device using an integrated circuit compatible process

    Energy Technology Data Exchange (ETDEWEB)

    Shiau, S H; Gau, C [Institute of Aeronautics and Astronautics, and Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan, Taiwan (China); Liu, C W; Dai, B T [National Nano Device Laboratories, No. 27, Nanke 3rd Road, Science-based Industrial Park, Hsin-shi, Tainan, Taiwan (China)], E-mail: gauc@mail.ncku.edu.tw

    2008-03-12

    This study presents the synthesis of a dense single-wall carbon nanotube (SWNT) network on a silicon substrate using alcohol as the source gas. The nanosize catalysts required are made by the reduction of metal compounds in ethanol. The key point in spreading the nanoparticles on the substrate, so that the SWNT network can be grown over the entire wafer, is making the substrate surface hydrophilic. This SWNT network is so dense that it can be treated like a thin film. Methods of patterning this SWNT film with integrated circuit compatible processes are presented and discussed for the first time in the literature. Finally, fabrication and characteristic measurements of a field effect transistor (FET) using this SWNT film are also demonstrated. This FET is shown to have better electronic properties than any other kind of thin film transistor. This thin film with good electronic properties can be readily applied in the processing of many other SWNT electronic devices.

  6. Studies of field and secondary electron emission from nanocomposite carbon films

    Science.gov (United States)

    Gonzalez Berrios, Adolfo

    The Electron Field Emission (EFE) and Secondary Electron Emission (SEE) properties of sulfur-incorporated nanocomposite carbon films (n-C:S) grown by hot filament CVD were studied. First, as a foundation for the experimental EFE studies, the electrostatic field gradients present in measuring configurations were numerically studied using the finite element method. Especially, the generally assumed validity of the V/dCA approximation for the cathode surface electric field (ES) under commonly employed electron field emission configurations was investigated. Results indicate that the V/d CA approximation is far from being universally applicable to all the field emission measuring configurations, and that only one configuration (the flat cylindrical probe) gives a sufficiently uniform ES, which nearly equals V/dCA over most of the cathode area under the probe. Second, the effect of adsorbates on EFE was investigated by inducing adsorption on a set of n-C:S films with similar EFE properties by liquid treatment at standard conditions. Adsorbates caused an increase in the turn-on field that was found to depend on the polarity of the liquid used: the larger [smaller] the polarity, the smaller [larger] the increase in turn-on field. The analysis of the data indicates that the increase in turn-on field is due to an increase in work function caused by adsorbates. Also, the hysteresis behavior, present in the field emission measurements, changes from clockwise to counterclockwise due to the adsorbates. This is due to the adsorption-desorption process occurring on the films' surface during emission. Third, the role of Mo2C (present between the Mo substrate and the carbon film) in the EFE properties of nanocomposite carbon films was studied. A relation between the relative thickness of Mo2C (002) planes, obtained using weighed intensities, and the field emission turn-on fields was found. In general, the relation is direct: the turn-on field increases as the thickness of the Mo2C

  7. Titania Nanotubes Grown on Carbon Fibers for Photocatalytic Decomposition of Gas-Phase Aromatic Pollutants

    Directory of Open Access Journals (Sweden)

    Wan-Kuen Jo

    2014-03-01

    Full Text Available This study aimed to prepare titania (TiO2 nanotube (TNT arrays grown on un-activated carbon fibers (UCFs, with the application of different TiO2 loadings based on the coating-hydrothermal process, and to evaluate their photocatalytic activity for the degradation of sub-ppm levels of aromatic pollutants (benzene, toluene, ethyl benzene, and o-xylene (BTEX using a plug-flow photocatalytic reactor. The characteristics of the prepared photocatalysts were determined by scanning electron microscopy (SEM, energy-dispersive X-ray (EDX, transmission electron microscopy (TEM, UV-visible absorption spectroscopy (UV-Vis and X-ray diffraction (XRD analyses. Spectral analysis showed that the prepared photocatalysts were closely associated with the characteristics of one-dimensional nanostructured TiO2 nanotubes for TNTUCFs and spherical shapes for TiO2-coated UCF (TUCF. The photocatalytic activities of BTEX obtained from TNTUCFs were higher than those obtained from a reference photocatalyst, TUCF. Specifically, the average degradation efficiencies of BTEX observed for TNTUCF-10 were 81%, 97%, 99%, and 99%, respectively, while those observed for TUCF were 14%, 42%, 52%, and 79%, respectively. Moreover, the photocatalytic activities obtained for TNTUCFs suggested that the degradation efficiencies of BTEX varied with changes in TiO2 loadings, allowing for the optimization of TiO2 loading. Another important finding was that input concentrations and air flow rates could be important parameters for the treatment of BTEX, which should be considered for the optimization of TNTUCFs application. Taken together, TNTUCFs can be applied to effectively degrade sub-ppm levels of gas-phase aromatic pollutants through the optimization of operational conditions.

  8. Carbon nanofibers with radially grown graphene sheets derived from electrospinning for aqueous supercapacitors with high working voltage and energy density.

    Science.gov (United States)

    Zhao, Lei; Qiu, Yejun; Yu, Jie; Deng, Xianyu; Dai, Chenglong; Bai, Xuedong

    2013-06-07

    Improvement of energy density is an urgent task for developing advanced supercapacitors. In this paper, aqueous supercapacitors with high voltage of 1.8 V and energy density of 29.1 W h kg(-1) were fabricated based on carbon nanofibers (CNFs) and Na2SO4 electrolyte. The CNFs with radially grown graphene sheets (GSs) and small average diameter down to 11 nm were prepared by electrospinning and carbonization in NH3. The radially grown GSs contain between 1 and a few atomic layers with their edges exposed on the surface. The CNFs are doped with nitrogen and oxygen with different concentrations depending on the carbonizing temperature. The supercapacitors exhibit excellent cycling performance with the capacity retention over 93.7% after 5000 charging-discharging cycles. The unique structure, possessing radially grown GSs, small diameter, and heteroatom doping of the CNFs, and application of neutral electrolyte account for the high voltage and energy density of the present supercapacitors. The present supercapacitors are of high promise for practical application due to the high energy density and the advantages of neutral electrolyte including low cost, safety, low corrosivity, and convenient assembly in air.

  9. Terahertz and M4PP conductivity mapping of large area CVD grown graphene films

    DEFF Research Database (Denmark)

    Buron, Jonas Christian Due; Petersen, Dirch Hjorth; Bøggild, Peter;

    We demonstrate mapping of magnitude and variation of the electrical conductance of large area CVD graphene films by terahertz time-domain spectroscopy (THz-TDS) and micro four-point-probe (M4PP). Non-trivial correlations between results obtained with the two techniques are discussed in relation...

  10. Influence of interface reactions on the YBCO films grown by fluorine-free solution route

    DEFF Research Database (Denmark)

    Zhao, Yue; Wu, Wei; Tang, Xiao;

    2015-01-01

    Fabrication of full-stacked coated conductors by all-chemical-solution routes exhibit a great potential in view of further reducing the cost and increasing the throughput for industrialization. Growth of YBa2Cu3O7−x (YBCO) superconducting films by fluorine-free metal organic deposition routes (FF......-MOD) which are environmental friendly has attracted more attentions recently. In this work, comparison study was performed on the YBCO-Ag superconducting thin films deposited on two types of single crystal substrates, LaAlO3 and Ce0.9La0.9O2−y/YSZ. The structural characterization and superconducting...... properties studies reveal that the interface reactions between the YBCO-Ag film and the CLO cap layer play an essential role on the nucleation and growth of YBCO-Ag films from the FF solution. Weak texture caused by serious interface reactions at high growth temperature is the main explanations for the poor...

  11. Structural transformations in MoO{sub x} thin films grown by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Camacho-Lopez, M.A.; Haro-Poniatowski, E. [Departamento de Fisica, Laboratorio de Optica Cuantica, Universidad Autonoma Metropolitana Iztapalapa, Apdo. Postal 55-534, 09340, Mexico D. F. (Mexico); Escobar-Alarcon, L. [Departamento de Fisica, Instituto Nacional de Investigaciones Nucleares, Apdo. Postal 18-1027, 11801, Mexico D. F. (Mexico)

    2004-01-01

    In this work, laser-induced crystallization in MoO{sub x} thin films (1.8{<=}x{<=}2.1) is reported. This transformation involves a MoO{sub x} oxidation and subsequently a crystallization process from amorphous MoO{sub 3} to crystalline {alpha}MoO{sub 3}. For comparison purposes crystallization is induced thermally, in an oven, as well. The crystallization kinetics is monitored by Raman spectroscopy; a threshold in the energy density necessary to induce the phase transformation is determined in the case of photo-crystallization. This threshold depends on the type of substrate on which the film is deposited. For the thin films deposited on glass substrates, the structural transformation is from amorphous MoO{sub x} to the thermodynamically stable {alpha}MoO{sub 3} crystalline phase. For the thin films deposited on Si(100) the structural transformation is from amorphous MoO{sub x} to a mixture of {alpha}MoO{sub 3} and the thermodynamically unstable {beta}MoO{sub 3} crystalline phases. The structural transformations are also characterized by scanning electron microscopy and light-transmission experiments. (orig.)

  12. Tungsten oxide thin films grown by thermal evaporation with high resistance to leaching

    Energy Technology Data Exchange (ETDEWEB)

    Correa, Diogo S. [Universidade Federal de Pelotas (UFPel), RS (Brazil). Centro de Ciencias Quimicas, Farmaceuticas e de Alimentos; Pazinato, Julia C.O.; Freitas, Mauricio A. de; Radtke, Claudio; Garcia, Irene T.S., E-mail: irene@iq.ufrgs.br [Universidade Federal do Rio Grande do Sul (UFRGS), Porto Alegre, RS (Brazil). Instituto de Quimica; Dorneles, Lucio S. [Universidade Federal de Santa Maria (UFSM), RS (Brazil). Centro de Ciencias Naturais e Exatas

    2014-05-15

    Tungsten oxides show different stoichiometries, crystal lattices and morphologies. These characteristics are important mainly when they are used as photocatalysts. In this work tungsten oxide thin films were obtained by thermal evaporation on (100) silicon substrates covered with gold and heated at 350 and 600 °C, with different deposition times. The stoichiometry of the films, morphology, crystal structure and resistance to leaching were characterized through X-ray photoelectron spectroscopy, micro-Raman spectroscopy, scanning and transmission electron microscopy, X-ray diffractometry, Rutherford backscattering spectrometry and O{sup 16} (α,α')O{sup 16} resonant nuclear reaction. Films obtained at higher temperatures show well-defined spherical nanometric structure; they are composed of WO{sub 3.1} and the presence of hydrated tungsten oxide was also observed. The major crystal structure observed is the hexagonal. Thin films obtained through thermal evaporation present resistance to leaching in aqueous media and excellent performance as photocatalysts, evaluated through the degradation of the methyl orange dye. (author)

  13. Thermally induced evolution of sol–gel grown WO3 films on ITO/glass substrates

    NARCIS (Netherlands)

    Caruso, T.; Castriota, M.; Policicchio, A.; Fasanella, A.; Santo, M.P. De; Ciuchi, F.; Desiderio, G.; Rosa, S. La; Rudolf, P.; Agostino, R.G.; Cazzanelli, E.

    2014-01-01

    The electronic, morphological and structural properties of WO3 thin films, synthesized via a sol-gel route and deposited on ITO/glass substrates by spin-coating, were analyzed as a function of annealing temperature (100-700 degrees C range) by Scanning Electron Microscopy, Atomic Force Microscopy, m

  14. The annealing induced extraordinary properties of SI based ZNO film grown by RF sputtering

    CERN Document Server

    Li, Jing; Wu, Suntao

    2007-01-01

    Pb(Zr0.52Ti0.48)O3 (PZT) thin films were in situ deposited by pulsed laser deposition (PLD) on Pt/Ti/SiO2/Si substrates using a template layer derived by sol-gel method. A 0.1-$\\mu$m-thick PZT layer with (111) or (100)-preferred orientation was first deposited onto Pt/Ti/SiO2/Si substrates using the sol-gel method, and than a PZT layer with thickness of 1$\\mu$m was in situ deposited by PLD on the above-mentioned PZT layer. The crystalline phases and the preferred orientations of the PZT films were investigated by X-ray diffraction analysis. Surface and cross-sectional morphologies were observed by scanning electron microscopy and transmission electron microscopy. The electrical properties of the films were evaluated by measuring their P-E hysteresis loops and dielectric constants. The preferred orientation of the films can be controlled using the template layer derived by the sol-gel method. The deposition temperature required to obtain the perovskite phase in this process is approximately 460 degrees C, and ...

  15. Charged vacancy induced enhanced piezoelectric response of reactive assistive IBSD grown AlN thin films

    Science.gov (United States)

    Sharma, Neha; Rath, Martando; Ilango, S.; Ravindran, T. R.; Ramachandra Rao, M. S.; Dash, S.; Tyagi, A. K.

    2017-01-01

    Piezoelectric response of AlN thin films was investigated in a AlN/Ti/Si(1 0 0) layer structure prepared by ion beam sputter deposition (IBSD) in reactive assistance of N+/\\text{N}2+ ions. The samples were characterized for their microstructure, piezoelectric response and charged defects using high resolution x-ray diffraction (HR-XRD), piezo force microscopy (PFM) and photoluminescence (PL) spectroscopy respectively. Our results show that the films are highly textured along the a-axis and charged native point defects are present in the microstructure. Phase images of these samples obtained from PFM show that the films are predominantly N-polar. The measured values of piezoelectric coefficient d 33(eff) for these samples are as high as 206  ±  20 pm V-1 and 668  ±  60 pm V-1 calculated by piezo response loop for AlN films of a thickness of 235 nm and 294 nm respectively. A mechanism for high d 33(eff) values is proposed with a suitable model based on the charged defects induced enhanced polarization in the dielectric continuum of AlN.

  16. Electronic Power System Application of Diamond-Like Carbon Films

    Science.gov (United States)

    Wu, Richard L. C.; Kosai, H.; Fries-Carr, S.; Weimer, J.; Freeman, M.; Schwarze, G. E.

    2003-01-01

    A prototype manufacturing technology for producing high volume efficiency and high energy density diamond-like carbon (DLC) capacitors has been developed. Unique dual ion-beam deposition and web-handling systems have been designed and constructed to deposit high quality DLC films simultaneously on both sides of capacitor grade aluminum foil and aluminum-coated polymer films. An optimized process, using inductively coupled RF ion sources, has been used to synthesize electrically robust DLC films. DLC films are amorphous and highly flexible, making them suitable for the production of wound capacitors. DLC capacitors are reliable and stable over a wide range of AC frequencies from 20 Hz to 1 MHz, and over a temperature range from .500 C to 3000 C. The compact DLC capacitors offer at least a 50% decrease in weight and volume and a greater than 50% increase in temperature handling capability over equal value capacitors built with existing technologies. The DLC capacitors will be suitable for high temperature, high voltage, pulsed power and filter applications.

  17. Iron nanoparticles embedded in carbon films: structural and optical properties

    Science.gov (United States)

    Mashayekhi, Fatemeh; Shafiekhani, Azizollah; Sebt, Seyed Ali

    2016-06-01

    In the present work amorphous hydrogenated carbon films with sputtered iron nanoparticles (Fe NPs @ a-C:H) were deposited by co-deposition of RF-sputtering and RF-plasma enhanced chemical vapor deposition methods using acetylene gas and iron target on quartz and silicon substrates. Samples were prepared in different initial pressures and during constant deposition time. The crystalline structure of Fe NPs @ a-C:H was studied using X-ray diffraction and selected area electron diffraction patterns. The X-ray photoelectron spectroscopy analysis presents that increasing the initial pressure decreases the atomic ratio of Fe/C and the sp3-hybridized carbon content in prepared samples. The transmission electron microscope image shows the encapsulated Fe NPs in carbon films. The optical properties and localized surface plasmon resonance (LSPR) of samples were studied using UV-visible spectrophotometry, which is shown that increasing of Fe content decreases the intensity of LSPR peak and increases the optical band gap.

  18. Photoluminescence associated with basal stacking faults in c-plane ZnO epitaxial film grown by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Yang, S.; Kuo, C. C.; Hsieh, W. F. [Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan (China); Liu, W.-R. [Scientific Research Division, National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan (China); Lin, B. H. [Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan (China); Scientific Research Division, National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan (China); Hsu, H.-C. [Institute of Electro-Optical Science and Engineering and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan (China); Hsu, C.-H. [Scientific Research Division, National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan (China); Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan (China)

    2012-03-05

    Basal plane stacking faults (BSFs) with density of {approx}1 x 10{sup 6} cm{sup -1} are identified as the dominant defect in the annealed ZnO thin films grown on c-plane sapphire by atomic layer deposition. The dominant peak centered at 3.321 eV in low-temperature photoluminescence measurements is attributed to the emission from the BSFs. The emission mechanism is considered to be the confined indirect excitons in the region of quantum-well-like structure formed by the BSFs. The observed energy shift of 19 meV with respect to the BSF-bounded exciton at low temperature may be caused by the localization effect associated with the coupling between BSF quantum wells.

  19. Spin-resolved photoemssion study of epitaxially grown MoSe2 and WSe2 thin films

    Science.gov (United States)

    Mo, Sung-Kwan; Hwang, Choongyu; Zhang, Yi; Fanciulli, Mauro; Muff, Stefan; Dil, J. Hugo; Shen, Zhi-Xun; Hussain, Zahid

    2016-11-01

    Few-layer thick MoSe2 and WSe2 possess non-trivial spin textures with sizable spin splitting due to the inversion symmetry breaking embedded in the crystal structure and strong spin-orbit coupling. We report a spin-resolved photoemission study of MoSe2 and WSe2 thin film samples epitaxially grown on a bilayer graphene substrate. We only found spin polarization in the single- and trilayer samples—not in the bilayer sample—mostly along the out-of-plane direction of the sample surface. The measured spin polarization is found to be strongly dependent on the light polarization as well as the measurement geometry, which reveals intricate coupling between the spin and orbital degrees of freedom in this class of material.

  20. Properties of La and Nb-modified PZT thin films grown by radio frequency assisted pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Verardi, P. [CNR-Istituto di Acustica, Via del Fosso del Cavaliere 100, I-00133 Rome (Italy); Craciun, F. [CNR-Istituto dei Sistemi Complessi, Via del Fosso del Cavaliere 100, I-00133 Rome (Italy); Dinescu, M. [NILPRP, Bucharest, PO Box MG-16, RO-76900 (Romania)]. E-mail: dinescum@ifin.nipne.ro; Scarisoreanu, N. [NILPRP, Bucharest, PO Box MG-16, RO-76900 (Romania); Moldovan, A. [NILPRP, Bucharest, PO Box MG-16, RO-76900 (Romania); Purice, A. [NILPRP, Bucharest, PO Box MG-16, RO-76900 (Romania); Galassi, C. [CNR-ISTEC, Via Granarolo 64, I 48018 Faenza (Italy)

    2005-04-25

    Lead zirconate titanate ferroelectric thin films added with La and Nb has been grown by radio frequency assisted pulsed laser deposition on Pt/Si, starting from sintered targets. The dielectric properties were measured in a large frequency range and their dependence on the a.c. driving field amplitude has been investigated. A linear decreasing of the dielectric permittivity with frequency logarithm increasing has been evidenced. The most important factor for the driving field amplitude influence on the dielectric properties is the type of vacancies introduced by La and Nb substitutions, which indicates that the dynamics involved in a.c. field behavior is controlled by interaction mechanisms between ferroelectric domain or nanodomain walls and pinning (vacancies) centers.