WorldWideScience

Sample records for carbon films grown

  1. Microhardness studies on thin carbon films grown on P-type, (100) silicon

    Science.gov (United States)

    Kolecki, J. C.

    1982-01-01

    A program to grow thin carbon films and investigate their physical and electrical properties is described. Characteristics of films grown by rf sputtering and vacuum arc deposition on p type, (100) silicon wafers are presented. Microhardness data were obtained from both the films and the silicon via the Vickers diamond indentation technique. These data show that the films are always harder than the silicon, even when the films are thin (of the order of 1000 A). Vacuum arc films were found to contain black carbon inclusions of the order of a few microns in size, and clusters of inclusions of the order of tens of microns. Transmission electron diffraction showed that the films being studied were amorphous in structure.

  2. Ultrafast carrier dynamics in purified and as-grown single-walled carbon nanotube films

    Institute of Scientific and Technical Information of China (English)

    Long Yong-Bing; Song Li; Zhang Chun-Yu; Wang Li; Fu Pan-Ming; Zhang Zhi-Guo; Xie Si-Shen; Wang Guo-Ping

    2005-01-01

    Ultrafast time-resolved optical transmissions in purified and as-grown single-walled carbon nanotube films are measured at a temperature of 200K. The signal of the purified sample shows a crossover from photobleaching to photoabsorption. The former and the latter are interpreted as the state filling and the red shift of the π-plasmon,respectively. The signal of the as-grown sample can be perfectly fitted by a single-exponential with a time constant of 232fs. The disappearance of the negative component in the as-grown sample is attributed to the charge transfer between the semiconducting nanotubes and the impurities.

  3. Nanostructured Diamond-Like Carbon Films Grown by Off-Axis Pulsed Laser Deposition

    Directory of Open Access Journals (Sweden)

    Seong Shan Yap

    2015-01-01

    Full Text Available Nanostructured diamond-like carbon (DLC films instead of the ultrasmooth film were obtained by pulsed laser ablation of pyrolytic graphite. Deposition was performed at room temperature in vacuum with substrates placed at off-axis position. The configuration utilized high density plasma plume arriving at low effective angle for the formation of nanostructured DLC. Nanostructures with maximum size of 50 nm were deposited as compared to the ultrasmooth DLC films obtained in a conventional deposition. The Raman spectra of the films confirmed that the films were diamond-like/amorphous in nature. Although grown at an angle, ion energy of >35 eV was obtained at the off-axis position. This was proposed to be responsible for subplantation growth of sp3 hybridized carbon. The condensation of energetic clusters and oblique angle deposition correspondingly gave rise to the formation of nanostructured DLC in this study.

  4. Electron emission studies of CNTs grown on Ti and Ni containing amorphous carbon nanocomposite films

    International Nuclear Information System (INIS)

    Carbon nanotubes (CNTs) were grown successfully on the as-deposited dual metal (Ti and Ni) embedded films using a radio frequency plasma-enhanced chemical vapor deposition system. The microstructure of CNTs grown on the dual metal films proved to be heavily dependent on the percentages of metals included, varying both in size and in density. Electron emission tests carried out on the films with CNTs grown showed that the threshold field was dependent on the surface morphology of the CNTs, with the lowest threshold field at 3.5 V/μm from 2.5% Ti/Ni film with CNTs. The field enhancement factor, β, of the emitting tips was also calculated from the Fowler-Nordheim plots, where CNTs from the 2.5% Ti/Ni film gave the highest field enhancement factor. However, it was observed that films with a single metal of either Ti or Ni did not manage to grow CNTs, possibly due to a lack of catalyst centres at the surface of the films. It was believed that the Ni nanoclusters acted as catalysts centres giving a rather uniform but randomly orientated type of CNTs. Results obtained pointed that the fabricated nanocomposite material could be a possible choice for cold cathode emitters and the Ti/Ni mixture could be an effective composite for controlling the CNT density.

  5. Raman shift on n-doped amorphous carbon thin films grown by electron beam evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Rebollo P., B. [Departamento de Fisica, Pontificia Universidad Catolica de Rio de Janeiro (Brazil); Facultad de Ciencias Fisico-Matematicas, Benemerita Universidad Autonoma de Puebla (Mexico); Freire L., F. Jr. [Departamento de Fisica, Pontificia Universidad Catolica de Rio de Janeiro (Brazil); Lozada M., R.; Palomino M., R. [Facultad de Ciencias Fisico-Matematicas, Benemerita Universidad Autonoma de Puebla (Mexico); Jimenez S., S. [Centro de Investigacion y de Estudios Avanzados del IPN, Laboratorio de Investigacion en Materiales, Queretaro (Mexico); Zelaya A., O. [Centro de Investigacion y de Estudios Avanzados del IPN, Departamento de Fisica, CINVESTAV-IPN, P.O. Box 14-740, Mexico 07360 D.F. (Mexico)

    2007-04-15

    The structural properties of carbon thin films synthesized under an atmosphere of nitrogen by means of electron beam evaporation were studied by Raman scattering spectroscopy. The electron beam evaporation technique is an important alternative to grown layers of this material with interesting structural properties. The observed shift of the Raman G band shows that the structure of the films tends to become more graphitic upon the increase of the deposition time. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  6. Amorphous Interface Layer in Thin Graphite Films Grown on the Carbon Face of SiC

    Energy Technology Data Exchange (ETDEWEB)

    Colby, R.; Stach, E.; Bolen, M.L.; Capano, M.A.

    2011-09-05

    Cross-sectional transmission electron microscopy (TEM) is used to characterize an amorphous layer observed at the interface in graphite and graphene films grown via thermal decomposition of C-face 4H-SiC. The amorphous layer does not cover the entire interface, but uniform contiguous regions span microns of cross-sectional interface. Scanning transmission electron microscopy (STEM) images and electron energy loss spectroscopy (EELS) demonstrate that the amorphous layer is a carbon-rich composition of Si/C. The amorphous layer is clearly observed in samples grown at 1600 C for a range of growth pressures in argon, but not at 1500 C, suggesting a temperature-dependent formation mechanism.

  7. Nanostructured Diamond-Like Carbon Films Grown by Off-Axis Pulsed Laser Deposition

    OpenAIRE

    Seong Shan Yap; Chen Hon Nee; Seong Ling Yap; Teck Yong Tou

    2015-01-01

    Nanostructured diamond-like carbon (DLC) films instead of the ultrasmooth film were obtained by pulsed laser ablation of pyrolytic graphite. Deposition was performed at room temperature in vacuum with substrates placed at off-axis position. The configuration utilized high density plasma plume arriving at low effective angle for the formation of nanostructured DLC. Nanostructures with maximum size of 50 nm were deposited as compared to the ultrasmooth DLC films obtained in a conventional depos...

  8. Immobilization of carbon nanotubes on functionalized graphene film grown by chemical vapor deposition and characterization of the hybrid material

    Directory of Open Access Journals (Sweden)

    Prashanta Dhoj Adhikari

    2014-01-01

    Full Text Available We report the surface functionalization of graphene films grown by chemical vapor deposition and fabrication of a hybrid material combining multi-walled carbon nanotubes and graphene (CNT–G. Amine-terminated self-assembled monolayers were prepared on graphene by the UV-modification of oxidized groups introduced onto the film surface. Amine-termination led to effective interaction with functionalized CNTs to assemble a CNT–G hybrid through covalent bonding. Characterization clearly showed no defects of the graphene film after the immobilization reaction with CNT. In addition, the hybrid graphene material revealed a distinctive CNT–G structure and p–n type electrical properties. The introduction of functional groups on the graphene film surface and fabrication of CNT–G hybrids with the present technique could provide an efficient, novel route to device fabrication.

  9. Immobilization of carbon nanotubes on functionalized graphene film grown by chemical vapor deposition and characterization of the hybrid material

    International Nuclear Information System (INIS)

    We report the surface functionalization of graphene films grown by chemical vapor deposition and fabrication of a hybrid material combining multi-walled carbon nanotubes and graphene (CNT–G). Amine-terminated self-assembled monolayers were prepared on graphene by the UV-modification of oxidized groups introduced onto the film surface. Amine-termination led to effective interaction with functionalized CNTs to assemble a CNT–G hybrid through covalent bonding. Characterization clearly showed no defects of the graphene film after the immobilization reaction with CNT. In addition, the hybrid graphene material revealed a distinctive CNT–G structure and p–n type electrical properties. The introduction of functional groups on the graphene film surface and fabrication of CNT–G hybrids with the present technique could provide an efficient, novel route to device fabrication. (paper)

  10. Thin film transistors of single-walled carbon nanotubes grown directly on glass substrates

    International Nuclear Information System (INIS)

    We report a transistor of randomly networked single-walled carbon nanotubes on a glass substrate. The carbon nanotube networks acting as the active components of the thin film transistor were selectively formed on the transistor channel areas that were previously patterned with catalysts to avoid the etching process for isolating nanotubes. The nanotube density was more than 50 μm-2, which is much larger than the percolation threshold. Transistors were successfully fabricated with a conducting and transparent ZnO for the back-side gate and the top-side gate. This allows the transparent electronics or suggests thin film applications of nanotubes for future opto-electronics

  11. Interface study between nanostructured tantalum nitride films and carbon nanotubes grown by chemical vapour deposition

    International Nuclear Information System (INIS)

    Highlights: • Our paper deals with the understanding of the carbon nanotubes growth parameters following the use of specific thin nitride buffer films. • For a large choice of buffer, we use ultra thin films elaborated by the very new method: high power pulsed magnetron sputtering; it allows a larger nitrogen incorporation in the films and lead to out of equilibrium phase formation. • Then by a multiscale investigation, developing a structural, a chemical and a morphology approach, we lead to some conclusion on the correlation between the phase transition for the buffer and morphology transition for the CNTs. • That is a new and deep approach. - Abstract: We present the role of nitrogen content in tantalum nitride ultra-thin buffers, on the carbon nanotubes (CNTs) growth by chemical vapour deposition at 850 °C, assisted by ferrocene as catalyst source. Tantalum nitride (TaNx) films with a very large range of concentration x = [0, 1.8] and various nanostructures, from amorphous Ta(N) to Ta3N5, were deposited by Highly Pulsed Plasma Magnetron Sputtering. The buffer films are characterized after heat treatment at 850 °C, and after the CNT growth, by wide angle X-ray scattering in grazing incidence and scanning electron microscopy. The CNT diameter explored by transition electron microscopy shows an all-out value for under stoichiometric thin films (Ta1-N1−δ, Ta3-N5−δ) and a minimum value just above the stoichiometric phases (Ta1-N1+δ, Ta3-N5+δ). Firstly one shows that the buffer films under the heat treatment present surface modification highly dependent on their initial state, which influences the catalyst particles diffusion. Secondly at the stoichiometric TaN phase we show that a specific ternary phase FeTa2O6 is formed at the interface CNT/buffer, not present in the other cases, leading to a special CNT growth condition

  12. Properties of boron and phosphorous incorporated tetrahedral amorphous carbon films grown using filtered cathodic vacuum arc process

    International Nuclear Information System (INIS)

    This paper reports the electrical, mechanical, structural and field emission properties of as grown and also boron and phosphorous incorporated tetrahedral amorphous carbon (ta-C) films, deposited using a filtered cathodic vacuum arc process. The effect of varying boron and phosphorous content (up to 2.0 at.% in to ta-C) on the conductivity (σD), activation energy (ΔE1), hardness, microstructure, emission threshold (Eturn-ON) and emission current density (J) at 12.5 V/μm of ta-C: B and ta-C: P films deposited at a high negative substrate bias of -300 V are reported. It is observed that both boron and phosphorous incorporation leads to a nearly an order increase in σD and corresponding decrease in ΔE1 and a slight increase in hardness as compared to as grown ta-C films. In the case of field assisted electron emission, it is observed that Eturn-ON increases and J decreases. The changes are attributed to the changes in the sp3/sp2 ratio of the films due to boron and phosphorous incorporation. The effect of boron on ta-C is to give a p-type effect whereas the effect of phosphorous gives n-type doping effect.

  13. Enzyme biosensor based on plasma-polymerized film-covered carbon nanotube layer grown directly on a flat substrate.

    Science.gov (United States)

    Muguruma, Hitoshi; Hoshino, Tatsuya; Matsui, Yasunori

    2011-07-01

    We report a novel approach to fabrication of an amperometric biosensor with an enzyme, a plasma-polymerized film (PPF), and carbon nanotubes (CNTs). The CNTs were grown directly on an island-patterned Co/Ti/Cr layer on a glass substrate by microwave plasma enhanced chemical vapor deposition. The as-grown CNTs were subsequently treated by nitrogen plasma, which changed the surface from hydrophobic to hydrophilic in order to obtain an electrochemical contact between the CNTs and enzymes. A glucose oxidase (GOx) enzyme was then adsorbed onto the CNT surface and directly treated with acetonitrile plasma to overcoat the GOx layer with a PPF. This fabrication process provides a robust design of CNT-based enzyme biosensor, because of all processes are dry except the procedure for enzyme immobilization. The main novelty of the present methodology lies in the PPF and/or plasma processes. The optimized glucose biosensor revealed a high sensitivity of 38 μA mM(-1) cm(-2), a broad linear dynamic range of 0.25-19 mM (correlation coefficient of 0.994), selectivity toward an interferent (ascorbic acid), and a fast response time of 7 s. The background current was much smaller in magnitude than the current due to 10 mM glucose response. The low limit of detection was 34 μM (S/N = 3). All results strongly suggest that a plasma-polymerized process can provide a new platform for CNT-based biosensor design. PMID:21678995

  14. Surface morphology and grain analysis of successively industrially grown amorphous hydrogenated carbon films (a-C:H) on silicon

    Energy Technology Data Exchange (ETDEWEB)

    Catena, Alberto [Department of Physics, University of Koblenz-Landau, 56070 Koblenz (Germany); McJunkin, Thomas [Department of Physics, The Ohio State University, 43210 Columbus, Ohio (United States); Agnello, Simonpietro; Gelardi, Franco M. [Department of Physics and Chemistry, University of Palermo, 90100 Palermo (Italy); Wehner, Stefan [Department of Physics, University of Koblenz-Landau, 56070 Koblenz (Germany); Fischer, Christian B., E-mail: chrbfischer@uni-koblenz.de [Department of Physics, University of Koblenz-Landau, 56070 Koblenz (Germany)

    2015-08-30

    Graphical abstract: - Highlights: • Two different a-C:H coatings in various thicknesses on Si (1 0 0) have been studied. • For both types no significant difference in surface morphology is detectable. • The grain number with respect to their height appears randomly distributed. • In average no grain higher than 14 nm and larger than 0.05 μm{sup 2} was observed. • A height to area correlation confines all detected grains to a limited region. - Abstract: Silicon (1 0 0) has been gradually covered by amorphous hydrogenated carbon (a-C:H) films via an industrial process. Two types of these diamond-like carbon (DLC) coatings, one more flexible (f-DLC) and one more robust (r-DLC), have been investigated. Both types have been grown by a radio frequency plasma-enhanced chemical vapor deposition (RF-PECVD) technique with acetylene plasma. Surface morphologies have been studied in detail by atomic force microscopy (AFM) and Raman spectroscopy has been used to investigate the DLC structure. Both types appeared to have very similar morphology and sp{sup 2} carbon arrangement. The average height and area for single grains have been analyzed for all depositions. A random distribution of grain heights was found for both types. The individual grain structures between the f- and r-type revealed differences: the shape for the f-DLC grains is steeper than for the r-DLC grains. By correlating the average grain heights to the average grain areas for all depositions a limited region is identified, suggesting a certain regularity during the DLC deposition mechanisms that confines both values. A growth of the sp{sup 2} carbon entities for high r-DLC depositions is revealed and connected to a structural rearrangement of carbon atom hybridizations and hydrogen content in the DLC structure.

  15. Surface morphology and grain analysis of successively industrially grown amorphous hydrogenated carbon films (a-C:H) on silicon

    International Nuclear Information System (INIS)

    Graphical abstract: - Highlights: • Two different a-C:H coatings in various thicknesses on Si (1 0 0) have been studied. • For both types no significant difference in surface morphology is detectable. • The grain number with respect to their height appears randomly distributed. • In average no grain higher than 14 nm and larger than 0.05 μm2 was observed. • A height to area correlation confines all detected grains to a limited region. - Abstract: Silicon (1 0 0) has been gradually covered by amorphous hydrogenated carbon (a-C:H) films via an industrial process. Two types of these diamond-like carbon (DLC) coatings, one more flexible (f-DLC) and one more robust (r-DLC), have been investigated. Both types have been grown by a radio frequency plasma-enhanced chemical vapor deposition (RF-PECVD) technique with acetylene plasma. Surface morphologies have been studied in detail by atomic force microscopy (AFM) and Raman spectroscopy has been used to investigate the DLC structure. Both types appeared to have very similar morphology and sp2 carbon arrangement. The average height and area for single grains have been analyzed for all depositions. A random distribution of grain heights was found for both types. The individual grain structures between the f- and r-type revealed differences: the shape for the f-DLC grains is steeper than for the r-DLC grains. By correlating the average grain heights to the average grain areas for all depositions a limited region is identified, suggesting a certain regularity during the DLC deposition mechanisms that confines both values. A growth of the sp2 carbon entities for high r-DLC depositions is revealed and connected to a structural rearrangement of carbon atom hybridizations and hydrogen content in the DLC structure

  16. Carbon nanotube network film directly grown on carbon cloth for high-performance solid-state flexible supercapacitors

    International Nuclear Information System (INIS)

    Carbon nanotubes (CNTs) have received increasing attention as electrode materials for high-performance supercapacitors. We herein present a straightforward method to synthesize CNT films directly on carbon cloths as electrodes for all-solid-state flexible supercapacitors (AFSCs). The as-made highly conductive electrodes possess a three-dimensional (3D) network architecture for fast ion diffusion and good flexibility, leading to an AFSC with a specific capacitance of 106.1 F g−1, an areal capacitance of 38.75 mF cm−2, an ultralong cycle life of 100 000 times (capacitance retention: 99%), a good rate capability (can scan at 1000 mV s−1, at which the capacitance is still ∼37.8% of that at 5 mV s−1), a high energy density (2.4 μW h cm−2) and a high power density (19 mW cm−2). Moreover, our AFSC maintains excellent electrochemical attributes even with serious shape deformation (bending, folding, etc), high mechanical pressure (63 kPa) and a wide temperature window (up to 100 ° C). After charging for only 5 s, three such AFSC devices connected in series can efficiently power a red round LED for 60 s. Our work could pave the way for the design of practical AFSCs, which are expected to be used for various flexible portable/wearable electronic devices in the future. (paper)

  17. Effect of nitrogen pressure on optical properties and microstructure of diamond-like carbon films grown by pulsed laser deposition

    Institute of Scientific and Technical Information of China (English)

    DING Xu-Li; LI Qing-Shan; KONG Xiang-he

    2009-01-01

    The effect of nitrogen pressure on optical properties of hydrogen-free diamond-like carbon (DLC) films deposited by pulsed laser ablation graphite in different background pressures of nitrogen is reported. By varying nitrogen pressures from 0.05 to 15.00 Pa, the photoluminescence is gradually increased and optical transmittance is gradually decreased. Atomic force microscopy (AFM) is used to observe the surface morphology of the DLC films. The results indicate that the surface becomes unsmoothed and there are some globose particles on the films surface with the rise of nitrogen pressures. The microstructure of the films is characterized using Raman spectroscopy.

  18. Enhanced field emission characteristics of nitrogen-doped carbon nanotube films grown by microwave plasma enhanced chemical vapor deposition process

    International Nuclear Information System (INIS)

    Nitrogen-doped carbon nanotube (CNT) films have been synthesized by simple microwave plasma enhanced chemical vapor deposition technique. The morphology and structures were investigated by scanning electron microscopy and high resolution transmission electron microscopy. Morphology of the films was found to be greatly affected by the nature of the substrates. Vertically aligned CNTs were observed on mirror polished Si substrates. On the other hand, randomly oriented flower like morphology of CNTs was found on mechanically polished ones. All the CNTs were found to have bamboo structure with very sharp tips. These films showed very good field emission characteristics with threshold field in the range of 2.65-3.55 V/μm. CNT film with flower like morphology showed lower threshold field as compared to vertically aligned structures. Open graphite edges on the side surface of the bamboo-shaped CNT are suggested to enhance the field emission characteristics which may act as additional emission sites

  19. Role of surface-electrical properties on the cell-viability of carbon thin films grown in nanodomain morphology

    Science.gov (United States)

    Javid, Amjed; Kumar, Manish; Yoon, Seokyoung; Lee, Jung Heon; Tajima, Satomi; Hori, Masaru; Geon Han, Jeon

    2016-07-01

    Carbon thin films, having a combination of unique physical and chemical properties, exhibit an interesting biocompatibility and biological response to living entities. Here, the carbon films are developed in the morphology form of nano-domains with nanoscale inter-domain separations, tuned by plasma conditions in the facing target magnetron sputtering process. The wettability and surface energy are found to have a close relation to the inter-domain separations. The chemical structure of carbon films exhibited the relative enhancement of sp3 in comparison to sp2 with the increase of domain separations. The cell-viability of these films shows promising results for L929 mouse fibroblast and Saos-2 bone cells, when inter-domain separation is increased. Electrical conductivity and surface energy are identified to play the key role in different time-scales during the cell-proliferation process. The contribution from electrical conductivity is dominant in the beginning of the cultivation, whereas with the passage of time (~3–5 d) the surface energy takes control over conductivity to enhance the cell proliferation.

  20. Stress relief patterns of hydrogenated amorphous carbon films grown by dc-pulse plasma chemical vapor deposition

    International Nuclear Information System (INIS)

    Hydrogenated amorphous carbon films were prepared on Si (1 0 0) substrates by dc-pulse plasma chemical vapor deposition. The nature of the deposited films was characterized by Raman spectra and the stress relief patterns were observed by scanning electron microscope. Besides the well-known sinusoidal type and flower type patterns, etc., two different stress relief patterns, ring type and peg-top shape with exiguous tine on the top, were observed. The ring type in this paper was a clear ridge-cracked buckle and unusual. Two competing buckle delamination morphologies ring and sinusoidal buckling coexist. The ridge-cracked buckle in ring type was narrower than the sinusoidal buckling. Meanwhile peg-top shape with exiguous tine on the top in this paper was unusual. These different patterns supported the approach in which the stress relief forms have been analyzed using the theory of plate buckling.

  1. Pyrolyzed thin film carbon

    Science.gov (United States)

    Tai, Yu-Chong (Inventor); Liger, Matthieu (Inventor); Harder, Theodore (Inventor); Konishi, Satoshi (Inventor); Miserendino, Scott (Inventor)

    2010-01-01

    A method of making carbon thin films comprises depositing a catalyst on a substrate, depositing a hydrocarbon in contact with the catalyst and pyrolyzing the hydrocarbon. A method of controlling a carbon thin film density comprises etching a cavity into a substrate, depositing a hydrocarbon into the cavity, and pyrolyzing the hydrocarbon while in the cavity to form a carbon thin film. Controlling a carbon thin film density is achieved by changing the volume of the cavity. Methods of making carbon containing patterned structures are also provided. Carbon thin films and carbon containing patterned structures can be used in NEMS, MEMS, liquid chromatography, and sensor devices.

  2. Protolytic carbon film technology

    Energy Technology Data Exchange (ETDEWEB)

    Renschler, C.L.; White, C.A.

    1996-04-01

    This paper presents a technique for the deposition of polyacrylonitrile (PAN) on virtually any surface allowing carbon film formation with only the caveat that the substrate must withstand carbonization temperatures of at least 600 degrees centigrade. The influence of processing conditions upon the structure and properties of the carbonized film is discussed. Electrical conductivity, microstructure, and morphology control are also described.

  3. Optical properties of diamond like carbon films containing copper, grown by high power pulsed magnetron sputtering and direct current magnetron sputtering: Structure and composition effects

    Energy Technology Data Exchange (ETDEWEB)

    Meškinis, Š., E-mail: sarunas.meskinis@ktu.lt; Čiegis, A.; Vasiliauskas, A.; Šlapikas, K.; Tamulevičius, T.; Tamulevičienė, A.; Tamulevičius, S.

    2015-04-30

    In the present study chemical composition, structure and optical properties of hydrogenated diamond like carbon films containing copper (DLC:Cu films) deposited by reactive magnetron sputtering were studied. Different modes of deposition — direct current (DC) sputtering and high power pulsed magnetron sputtering (HIPIMS) as well as two configurations of the magnetron magnetic field (balanced and unbalanced) were applied. X-ray diffractometry, Raman scattering spectroscopy, energy-dispersive X-ray spectroscopy and atomic force microscopy were used to study the structure and composition of the films. It was shown that by using HIPIMS mode contamination of the cathode during the deposition of DLC:Cu films can be suppressed. In all cases oxygen atomic concentration in the films was in 5–10 at.% range and it increased with the copper atomic concentration. The highest oxygen content was observed in the films deposited employing low ion/neutral ratio balanced DC magnetron sputtering process. According to the analysis of the parameters of Raman scattering spectra, sp{sup 3}/sp{sup 2} bond ratio decreased with the increase of Cu atomic concentration in the DLC films. Clear dependence of the extinction, absorbance and reflectance spectra on copper atomic concentration in the films was observed independently of the method of deposition. Surface plasmon resonance effect was observed only when Cu atomic concentration in DLC:Cu film was at least 15 at.%. The maximum of the surface plasmon resonance peak of the absorbance spectra of DLC:Cu films was in 600–700 nm range and redshifted with the increase of Cu amount. The ratio between the intensities of the plasmonic peak and hydrogenated amorphous carbon related peak at ~ 220 nm both in the extinction and absorbance spectra as well as peak to background ratio of DLC:Cu films increased linearly with Cu amount in the investigated 0–40 at.% range. Reflectance of the plasmonic DLC:Cu films was in 30–50% range that could be

  4. Optical properties of diamond like carbon films containing copper, grown by high power pulsed magnetron sputtering and direct current magnetron sputtering: Structure and composition effects

    International Nuclear Information System (INIS)

    In the present study chemical composition, structure and optical properties of hydrogenated diamond like carbon films containing copper (DLC:Cu films) deposited by reactive magnetron sputtering were studied. Different modes of deposition — direct current (DC) sputtering and high power pulsed magnetron sputtering (HIPIMS) as well as two configurations of the magnetron magnetic field (balanced and unbalanced) were applied. X-ray diffractometry, Raman scattering spectroscopy, energy-dispersive X-ray spectroscopy and atomic force microscopy were used to study the structure and composition of the films. It was shown that by using HIPIMS mode contamination of the cathode during the deposition of DLC:Cu films can be suppressed. In all cases oxygen atomic concentration in the films was in 5–10 at.% range and it increased with the copper atomic concentration. The highest oxygen content was observed in the films deposited employing low ion/neutral ratio balanced DC magnetron sputtering process. According to the analysis of the parameters of Raman scattering spectra, sp3/sp2 bond ratio decreased with the increase of Cu atomic concentration in the DLC films. Clear dependence of the extinction, absorbance and reflectance spectra on copper atomic concentration in the films was observed independently of the method of deposition. Surface plasmon resonance effect was observed only when Cu atomic concentration in DLC:Cu film was at least 15 at.%. The maximum of the surface plasmon resonance peak of the absorbance spectra of DLC:Cu films was in 600–700 nm range and redshifted with the increase of Cu amount. The ratio between the intensities of the plasmonic peak and hydrogenated amorphous carbon related peak at ~ 220 nm both in the extinction and absorbance spectra as well as peak to background ratio of DLC:Cu films increased linearly with Cu amount in the investigated 0–40 at.% range. Reflectance of the plasmonic DLC:Cu films was in 30–50% range that could be important in

  5. Carbon thin film thermometry

    Science.gov (United States)

    Collier, R. S.; Sparks, L. L.; Strobridge, T. R.

    1973-01-01

    The work concerning carbon thin film thermometry is reported. Optimum film deposition parameters were sought on an empirical basis for maximum stability of the films. One hundred films were fabricated for use at the Marshall Space Flight Center; 10 of these films were given a precise quasi-continuous calibration of temperature vs. resistance with 22 intervals between 5 and 80 K using primary platinum and germanium thermometers. Sensitivity curves were established and the remaining 90 films were given a three point calibration and fitted to the established sensitivity curves. Hydrogen gas-liquid discrimination set points are given for each film.

  6. PLD-grown thin film saturable absorbers

    Energy Technology Data Exchange (ETDEWEB)

    Tellkamp, Friedjof

    2012-11-01

    The subject of this thesis is the preparation and characterization of thin films made of oxidic dielectrics which may find their application as saturable absorber in passively Q-switched lasers. The solely process applied for fabrication of the thin films was the pulsed laser deposition (PLD) which stands out against other processes by its flexibility considering the composition of the systems to be investigated. Within the scope of this thesis the applied saturable absorbers can be divided into two fundamentally different kinds of functional principles: On the one hand, saturable absorption can be achieved by ions embedded in a host medium. Most commonly applied bulk crystals are certain garnets like YAG (Y{sub 3}Al{sub 5}O{sub 12}) or the spinel forsterite (Mg{sub 2}SiO{sub 4}), in each case with chromium as dopant. Either of these media was investigated in terms of their behavior as PLD-grown saturable absorber. Moreover, experiments with Mg{sub 2}GeO{sub 4}, Ca{sub 2}GeO{sub 4}, Sc{sub 2}O{sub 3}, and further garnets like YSAG or GSGG took place. The absorption coefficients of the grown films of Cr{sup 4+}:YAG were determined by spectroscopic investigations to be one to two orders of magnitude higher compared to commercially available saturable absorbers. For the first time, passive Q-switching of a Nd:YAG laser at 1064 nm with Cr{sup 4+}:YAG thin films could be realized as well as with Cr:Sc{sub 2}O{sub 3} thin films. On the other hand, the desirable effect of saturable absorption can also be generated by quantum well structures. For this purpose, several layer system like YAG/LuAG, Cu{sub 2}O/MgO, and ZnO/corumdum were investigated. It turned out that layer systems with indium oxide (In{sub 2}O{sub 3}) did not only grew in an excellent way but also showed up a behavior regarding their photo luminescence which cannot be explained by classical considerations. The observed luminescence at roughly 3 eV (410 nm) was assumed to be of excitonic nature and its

  7. Superconducting YBa2Cu3O7 thin films grown in-situ by ion beam co-deposition

    International Nuclear Information System (INIS)

    Superconducting YBCO thin films have been grown in-situ by three ion beam co-deposition sputtering. Both metal and oxide targets of Cu and Y and BaF2 and BaCO3 targets have been investigated. Film composition was determined by RBS and AES analysis. Films grown using BaF2 show fluorine contamination, whereas the carbon concentration in films grown using BaCO3 is beneath the Auger detection limit. Superconducting films have been grown on SrTiO3(Tco = 78K) and on Si with SiO2 or Y2O3 buffer layers(Tco = 35K)

  8. Synthesis, structural and field emission properties of multiwall carbon nanotube-graphene-like nanocarbon hybrid films grown by microwave plasma enhanced chemical vapor deposition

    International Nuclear Information System (INIS)

    Multiwall carbon nanotube (MWCNT)-graphene-like nanocarbon hybrid films were directly deposited on nickel substrate without any pre-treatment in a single-step by microwave plasma enhanced chemical vapor deposition (MW PECVD) technique at 600 °C. The effects of hydrogen partial pressure on the growth of MWCNT-graphene-like nanocarbon hybrid films and their structural, morphological and field emission properties were investigated. High resolution scanning electron microscope revealed MWCNT structure. High resolution transmission electron microscope images and Raman spectra revealed graphene-like nanocarbon film. Raman spectra showed 2D, G, D and D + G peaks at approximately 2690, 1590, 1350 and 2930 cm−1, respectively. The minimum threshold field for electron emission was found to be 3.6 V/μm corresponding to 1 μA/cm2 current density for the MWCNT-graphene-like nanocarbon hybrid film deposited at 20 Torr pressure whereas the maximum current density of 0.12 mA/cm2 and field enhancement factor of ∼3356 was obtained for the sample deposited at 5 Torr pressure. - Highlights: • MWCNT-graphene-like nanocarbon hybrid films were synthesized by MWPECVD technique. • Effect of pressure on the structural and field emission properties has been studied. • FESEM revealed MWCNT and HRTEM revealed graphene-like nanocarbon film structure. • Minimum ET = 3.6 V/μm with β = 3164 has been obtained in the film deposited at 20 Torr. • Maximum J = 0.12 mA/cm2 with β = 3356 has been obtained in the film deposited at 5 Torr

  9. Low temperature CVD growth of ultrathin carbon films

    Science.gov (United States)

    Yang, Chao; Wu, Peng; Gan, Wei; Habib, Muhammad; Xu, Weiyu; Fang, Qi; Song, Li

    2016-05-01

    We demonstrate the low temperature, large area growth of ultrathin carbon films by chemical vapor deposition under atmospheric pressure on various substrates. In particularly, uniform and continuous carbon films with the thickness of 2-5 nm were successfully grown at a temperature as low as 500 oC on copper foils, as well as glass substrates coated with a 100 nm thick copper layer. The characterizations revealed that the low-temperature-grown carbon films consist on few short, curved graphene layers and thin amorphous carbon films. Particularly, the low-temperature grown samples exhibited over 90% transmittance at a wavelength range of 400-750 nm and comparable sheet resistance in contrast with the 1000oC-grown one. This low-temperature growth method may offer a facile way to directly prepare visible ultrathin carbon films on various substrate surfaces that are compatible with temperatures (500-600oC) used in several device processing technologies.

  10. Preparation of single-walled carbon nanotube reinforced magnesia films

    OpenAIRE

    Du, C S; Pan, Ning

    2004-01-01

    Single-walled carbon nanotube (SWNT)/MgO composite films were fabricated by growing carbon nanotubes while simultaneously sintering a MgO film. The effect of iron and molybdenum concentrations in liquid catalysts and the effect of the density of carbon nanotubes in the composite films on the quality of the films were investigated. Microstructure analysis showed that SWNTs were uniformly grown in the MgO film. The presence of a controlled amount of carbon nanotubes in MgO films is believed to ...

  11. Cuprous oxide thin films grown by hydrothermal electrochemical deposition technique

    International Nuclear Information System (INIS)

    Semiconducting cuprous oxide films were grown by a hydrothermal electro-deposition technique on metal (Cu) and glass (ITO) substrates between 60 °C and 100 °C. X-ray diffraction studies reveal the formation of cubic cuprous oxide films in different preferred orientations depending upon the deposition technique used. Film growth, uniformity, grain size, optical band gap and photoelectrochemical response were found to improve in the hydrothermal electrochemical deposition technique. - Highlights: • Cu2O thin films were grown on Cu and glass substrates. • Conventional and hydrothermal electrochemical deposition techniques were used. • Hydrothermal electrochemical growth showed improved morphology, thickness and optical band gap

  12. Beryllium nitride thin film grown by reactive laser ablation

    OpenAIRE

    G. Soto; Diaz, J.A.; Machorro, R.; Reyes-Serrato, A.; de la Cruz, W.

    2001-01-01

    Beryllium nitride thin films were grown on silicon substrates by laser ablating a beryllium foil in molecular nitrogen ambient. The composition and chemical state were determined with Auger (AES), X-Ray photoelectron (XPS) and energy loss (EELS) spectroscopies. A low absorption coefficient in the visible region, and an optical bandgap of 3.8 eV, determined by reflectance ellipsometry, were obtained for films grown at nitrogen pressures higher than 25 mTorr. The results show that the reaction ...

  13. Photosensitivity of nanocrystalline ZnO films grown by PLD

    Energy Technology Data Exchange (ETDEWEB)

    Ayouchi, R.; Bentes, L.; Casteleiro, C. [Departamento de Fisica, Instituto Superior Tecnico, Av. Rovisco Pais 1, P-1049-001 Lisboa (Portugal); Conde, O. [Departamento de Fisica, Faculdade de Ciencias da Universidade de Lisboa, P-1749-016 Lisboa (Portugal); Marques, C.P.; Alves, E. [Instituto Tecnologico e Nuclear, ITN, P-2686-953 Sacavem (Portugal); Moutinho, A.M.C.; Marques, H.P.; Teodoro, O. [CeFiTec, Departamento de Fisica, Universidade Nova de Lisboa, P-2829-516 Caparica (Portugal); Schwarz, R. [Departamento de Fisica, Instituto Superior Tecnico, Av. Rovisco Pais 1, P-1049-001 Lisboa (Portugal)], E-mail: rschwarz@fisica.ist.utl.pt

    2009-03-15

    We have studied the properties of ZnO thin films grown by laser ablation of ZnO targets on (0 0 0 1) sapphire (Al{sub 2}O{sub 3}), under substrate temperatures around 400 deg. C. The films were characterized by different methods including X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD) and atomic force microscopy (AFM). XPS analysis revealed that the films are oxygen deficient, and XRD analysis with {theta}-2{theta} scans and rocking curves indicate that the ZnO thin films are highly c-axis oriented. All the films are ultraviolet (UV) sensitive. Sensitivity is maximum for the films deposited at lower temperature. The films deposited at higher temperatures show crystallite sizes of typically 500 nm, a high dark current and minimum photoresponse. In all films we observe persistent photoconductivity decay. More densely packed crystallites and a faster decay in photocurrent is observed for films deposited at lower temperature.

  14. Pyrolyzed carbon film diodes.

    Science.gov (United States)

    Morton, Kirstin C; Tokuhisa, Hideo; Baker, Lane A

    2013-11-13

    We have previously reported pyrolyzed parylene C (PPC) as a conductive carbon electrode material for use with micropipets, atomic force microscopy probes, and planar electrodes. Advantages of carbon electrode fabrication from PPC include conformal coating of high-aspect ratio micro/nanoscale features and the benefits afforded by chemical vapor deposition of carbon polymers. In this work, we demonstrate chemical surface doping of PPC through the use of previously reported methods. Chemically treated PPC films are characterized by multiple spectroscopic and electronic measurements. Pyrolyzed parylene C and doped PPC are used to construct diodes that are examined as both p-n heterojunction and Schottky barrier diodes. Half-wave rectification is achieved with PPC diodes and demonstrates the applicability of PPC as a conductive and semiconductive material in device fabrication. PMID:24090451

  15. Laser patterning of vertically grown carbon nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Chang, Won Seok [Korea Institute of Machinery and Materials, Daejeon (Korea, Republic of)

    2012-12-15

    The selective patterning of a carbon nanotube (CNT) forest on a Si substrate has been performed using a femtosecond laser. The high shock wave generated by the femtosecond laser effectively removed the CNTs without damage to the Si substrate. This process has many advantages because it is performed without chemicals and can be easily applied to large area patterning. The CNTs grown by plasma enhanced chemical vapor deposition (PECVD) have a catalyst cap at the end of the nanotube owing to the tip growth mode mechanism. For the application of an electron emission and biosensor probe, the catalyst cap is usually removed chemically, which damages the surface of the CNT wall. Precise control of the femtosecond laser power and focal position could solve this problem. Furthermore, selective CNT cutting using a femtosecond laser is also possible without any phase change in the CNTs, which is usually observed in the focused ion beam irradiation of CNTs.

  16. Elastic properties of B-C-N films grown by N2-reactive sputtering from boron carbide targets

    International Nuclear Information System (INIS)

    Boron-carbon-nitrogen films were grown by RF reactive sputtering from a B4C target and N2 as reactive gas. The films present phase segregation and are mechanically softer than boron carbide films (a factor of more than 2 in Young's modulus). This fact can turn out as an advantage in order to select buffer layers to better anchor boron carbide films on substrates eliminating thermally induced mechanical tensions

  17. Lanthanum and yttrium oxisulfide films grown from the vapor phase

    International Nuclear Information System (INIS)

    For the first time lanthanum and yttrium oxysulfide films are grown by light evaporation. The structure, photoluminescence, optical IR transmission of these films are investigated. Luminescent films of Y2O2S:Eu; La2O2S:Tb; La2O2S:Yb, Er are grown on sapphire, molten quartz, barium fluoride sbstrates. It is shown that the films are characterized by intensive photoluminescence, and emission lines of activator rare earth ions belong to, at least, two centre types. While studying IR transmission of La2O2S:Tb thin films absorption lines are observed in the 8-18μm range, which cannot be observed in three-dimensional monocrystals

  18. Analysis of carbon in SrTiO3 grown by hybrid molecular beam epitaxy

    International Nuclear Information System (INIS)

    Secondary ion mass spectroscopy (SIMS) was used to investigate carbon impurity concentrations in stoichiometric SrTiO3 films grown by a hybrid molecular beam epitaxy approach that uses an effusion cell to supply strontium, a rf plasma source for oxygen and a metal organic titanium source (titanium tetra isopropoxide). The carbon concentration in the films was measured as a function of growth parameters. At sufficiently high growth temperatures (>800 degree sign C), the films contain a few ppm of carbon. The challenges in accurately quantifying low carbon concentrations are discussed. A carbon-containing contamination layer is detected on the surfaces of SrTiO3 substrates and air-exposed films by SIMS and in scanning transmission electron microscopy. The contamination layer could be removed by high-temperature predeposition oxygen plasma cleaning.

  19. Poisson Ratio of Epitaxial Germanium Films Grown on Silicon

    Science.gov (United States)

    Bharathan, Jayesh; Narayan, Jagdish; Rozgonyi, George; Bulman, Gary E.

    2013-01-01

    An accurate knowledge of elastic constants of thin films is important in understanding the effect of strain on material properties. We have used residual thermal strain to measure the Poisson ratio of Ge films grown on Si ⟨001⟩ substrates, using the sin2 ψ method and high-resolution x-ray diffraction. The Poisson ratio of the Ge films was measured to be 0.25, compared with the bulk value of 0.27. Our study indicates that use of Poisson ratio instead of bulk compliance values yields a more accurate description of the state of in-plane strain present in the film.

  20. Carbon Nanotube Microarrays Grown on Nanoflake Substrates

    Science.gov (United States)

    Schmidt, Howard K.; Hauge, Robert H.; Pint, Cary; Pheasant, Sean

    2013-01-01

    This innovation consists of a new composition of matter where single-walled carbon nanotubes (SWNTs) are grown in aligned arrays from nanostructured flakes that are coated in Fe catalyst. This method of growth of aligned SWNTs, which can yield well over 400 percent SWNT mass per unit substrate mass, exceeds current yields for entangled SWNT growth. In addition, processing can be performed with minimal wet etching treatments, leaving aligned SWNTs with superior properties over those that exist in entangled mats. The alignment of the nanotubes is similar to that achieved in vertically aligned nanotubes, which are called "carpets. " Because these flakes are grown in a state where they are airborne in a reactor, these flakes, after growing SWNTs, are termed "flying carpets. " These flakes are created in a roll-to-roll evaporator system, where three subsequent evaporations are performed on a 100-ft (approx. =30-m) roll of Mylar. The first layer is composed of a water-soluble "release layer, " which can be a material such as NaCl. After depositing NaCl, the second layer involves 40 nm of supporting layer material . either Al2O3 or MgO. The thickness of the layer can be tuned to synthesize flakes that are larger or smaller than those obtained with a 40-nm deposition. Finally, the third layer consists of a thin Fe catalyst layer with a thickness of 0.5 nm. The thickness of this layer ultimately determines the diameter of SWNT growth, and a layer that is too thick will result in the growth of multiwalled carbon nanotubes instead of single-wall nanotubes. However, between a thickness of 0.5 nm to 1 nm, single-walled carbon nanotubes are known to be the primary constituent. After this three-layer deposition process, the Mylar is rolled through a bath of water, which allows catalyst-coated flakes to detach from the Mylar. The flakes are then collected and dried. The method described here for making such flakes is analogous to that which is used to make birefringent ink that is

  1. Carbon incorporation process in GaAsN films grown by chemical beam epitaxy using MMHy or DMHy as the N source

    International Nuclear Information System (INIS)

    Crystal quality of GaAsN films can be improved by using CBE for low-temperature growth. However, low-temperature growth increases C incorporation in the films, which degrades their electrical properties. Consequently, C incorporation was investigated in view of the surface reaction of N sources on a substrate surface, and MMHy and DMHy were compared. When MMHy was used as an N source, C concentration in GaAsN drastically increases below 380 deg. C than that in GaAs due to insufficient CH x desorption. In the case of DMHy, N(CH3)2 is desorbed more readily than CH x, therefore, the C concentration can then be reduced using DMHy

  2. InSb thin films grown by electrodeposition

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Joginder, E-mail: joginderchauhan82@gmail.com; Rajaram, P., E-mail: joginderchauhan82@gmail.com [School of Studies in Physics, Jiwaji University, Gwalior-474011 (India)

    2014-04-24

    We have grown InSb thin films on Cu substrates using the electrodeposition technique. The electrochemical bath from which the InSb thin films were grown was made up of a mixture of aqueous solutions of 0.05 M InCl{sub 3} and 0.03M SbCl{sub 3}, 0 .20M citric acid and 0.30M sodium citrate. Citric acid and sodium citrate were used as complexing agents to bring the reduction potential of In and Sb closer to maintain binary growth. The electrodeposited films were characterized by structural, morphological and optical studies. X-ray diffraction studies show that the films are polycrystalline InSb having the zinc blende structure. Scanning electron microscopy (SEM) studies reveal that the surface of the films is uniformly covered with submicron sized spherical particles. FTIR spectra of InSb thin films show a sharp absorption peak at wave number 1022 cm{sup −1} corresponding to the band gap. Hot probe analysis shows that the InSb thin films have p type conductivity.

  3. Thermally grown thin nitride films as a gate dielectric

    CERN Document Server

    Shin, H C; Hwang, T K; Lee, K R

    1998-01-01

    High-quality very thin films ( <=6 nm) of silicon nitride were thermally grown in ammonia atmosphere with an IR (Infrared) gold image furnace. As-grown nitride film was analyzed using AES(Auger Emission Spectroscopy). Using MIS (Metal-Insulator-Semiconductor) devices, the growth rate was calculated using CV (Capacitance-Voltage) measurements and various electrical characteristics were obtained using CV, IV (Current-Voltage), trapping, time-dependent breakdown, high-field stress, constant current injection stress and dielectric breakdown techniques. These characteristics showed that very thin thermal silicon nitride films can be used as gate dielectrics for future highly scaled-down ULSI (Ultra Large Scale Integrated) devices, especially for EEPROM (Electrically Erasable and Programmable ROM)'s.

  4. Low temperature CVD growth of ultrathin carbon films

    Directory of Open Access Journals (Sweden)

    Chao Yang

    2016-05-01

    Full Text Available We demonstrate the low temperature, large area growth of ultrathin carbon films by chemical vapor deposition under atmospheric pressure on various substrates. In particularly, uniform and continuous carbon films with the thickness of 2-5 nm were successfully grown at a temperature as low as 500 oC on copper foils, as well as glass substrates coated with a 100 nm thick copper layer. The characterizations revealed that the low-temperature-grown carbon films consist on few short, curved graphene layers and thin amorphous carbon films. Particularly, the low-temperature grown samples exhibited over 90% transmittance at a wavelength range of 400-750 nm and comparable sheet resistance in contrast with the 1000oC-grown one. This low-temperature growth method may offer a facile way to directly prepare visible ultrathin carbon films on various substrate surfaces that are compatible with temperatures (500-600oC used in several device processing technologies.

  5. Optical detection of carbon dioxide adsorption on epitaxial CuFe1 -xGaxO2 Delafossite film grown by pulse laser deposition

    Science.gov (United States)

    Rojas, S.; Joshi, T.; Wheatley, R. A.; Sarabia, M.; Borisov, P.; Lederman, D.; Cabrera, A. L.

    2016-06-01

    A highly epitaxial delafossite CuFe1 -xGaxO2 film was made with pulse laser deposition in high vacuum. The sample thickness was around 48 nm and it was terminated with CuFeO2. This delafossite sample was exposed to a CO2 atmosphere under controlled conditions and chemisorption of CO2 on the surface was observed. Transmittance and reflectance spectroscopies were recorded for the sample post surface heat treatment held in a vacuum chamber (0.05 Kpa) and after exposure to CO2. Both spectra were recorded over a wavelength range of 350-1100 nm. Chemisorption of CO2 was correlated with an increase in transmittance and decrease in reflectance in the pressure range 0-60 kPa. These observations were confirmed with X-ray photoelectron spectroscopy and thermal programmed desorption data obtained in an independent experiment. The CO2 is bound to the surface forming a carboxylate structure via coordination of a bent CO2- δ molecule to a Cu center.

  6. Formation and electron field emission of graphene films grown by hot filament chemical vapor deposition

    International Nuclear Information System (INIS)

    Graphene films with different structures were catalytically grown on the silicon substrate pre-deposited with a gold film by hot filament chemical vapor deposition under different conditions, where methane, hydrogen and nitrogen were used as the reactive gases. The morphological and compositional properties of graphene films were studied using advanced instruments including field emission scanning electron microscopy, micro-Raman spectroscopy and X-ray photoelectron spectroscopy. The results indicate that the structure and composition of graphene films are changed with the variation of the growth conditions. According to the theory related to thermodynamics, the formation of graphene films was theoretically analyzed and the results indicate that the formation of graphene films is related to the fast incorporation and precipitation of carbon. The electron field emission (EFE) properties of graphene films were studied in a high vacuum system of ∼10−6 Pa and the EFE results show that the turn-on field is in a range of 5.2–5.64 V μm−1 and the maximum current density is about 63 μ A cm−2 at the field of 7.7 V μm−1. These results are important to control the structure of graphene films and have the potential applications of graphene in various nanodevices. - Highlights: • Graphene films are grown on gold films by hot filament chemical vapor deposition. • Hierarchical nanoflower structures made of graphene flakes are demonstrated. • The size of gold nanodroplets plays an important role in graphene flake formation. • The films show competitive electron field emission properties

  7. thin films grown with additional NaF layers

    Science.gov (United States)

    Kim, Gee Yeong; Kim, Juran; Jo, William; Son, Dae-Ho; Kim, Dae-Hwan; Kang, Jin-Kyu

    2014-10-01

    CZTS precursors [SLG/Mo (300 nm)/ZnS (460 nm)/SnS (480 nm)/Cu (240 nm)] were deposited by RF/DC sputtering, and then NaF layers (0, 15, and 30 nm) were grown by electron beam evaporation. The precursors were annealed in a furnace with Se metals at 590°C for 20 minutes. The final composition of the CZTSSe thin-films was of Cu/(Zn + Sn) ~ 0.88 and Zn/Sn ~ 1.05, with a metal S/Se ratio estimated at ~0.05. The CZTSSe thin-films have different NaF layer thicknesses in the range from 0 to 30 nm, achieving a ~3% conversion efficiency, and the CZTSSe thin-films contain ~3% of Na. Kelvin probe force microscopy was used to identify the local potential difference that varied according to the thickness of the NaF layer on the CZTSSe thin-films. The potential values at the grain boundaries were observed to increase as the NaF thickness increased. Moreover, the ratio of the positively charged GBs in the CZTSSe thin-films with an NaF layer was higher than that of pure CZTSSe thin-films. A positively charged potential was observed around the grain boundaries of the CZTSSe thin-films, which is a beneficial characteristic that can improve the performance of a device.

  8. Holmium titanium oxide thin films grown by atomic layer deposition

    International Nuclear Information System (INIS)

    Thin solid holmium titanium oxide films were grown by atomic layer deposition at 300 °C on silicon substrates. The precursors used were Ho(thd)3, Ti(OCH(CH3)2)4 and O3. The composition of the films was varied via changing the holmium–titanium ratio by variation of relative amounts of the sequential deposition cycles of constituent oxides, i.e. Ho2O3 and TiO2. The constituent oxides alone were crystallized in as-deposited states. After mixing the Ho2O3 or TiO2 layers the films were amorphous but were crystallized after annealing at 800–1000 °C, mostly transforming into the Ho2Ti2O7 phase. The stoichiometric ratio of 1:1 between Ti and Ho contents was achieved by application of at least twice as many Ho2O3 deposition cycles as TiO2 cycles. Magnetometry revealed that saturation magnetization could be observed in the films containing lower amounts of holmium compared to titanium. - Highlights: • Holmium-doped TiO2 and holmium titanates were deposited by ALD. • Crystallization temperature increased with the Ho:Ti ratio. • Holmium titanate films possessed pyrochlore phase. • The films could demonstrate saturative magnetization

  9. Epitaxial strontium titanate films grown by atomic layer deposition on SrTiO3-buffered Si(001) substrates

    International Nuclear Information System (INIS)

    Epitaxial strontium titanate (STO) films have been grown by atomic layer deposition (ALD) on Si(001) substrates with a thin STO buffer layer grown by molecular beam epitaxy (MBE). Four unit cells of STO grown by MBE serve as the surface template for ALD growth. The STO films grown by ALD are crystalline as-deposited with minimal, if any, amorphous SiOx layer at the STO-Si interface. The growth of STO was achieved using bis(triisopropylcyclopentadienyl)-strontium, titanium tetraisopropoxide, and water as the coreactants at a substrate temperature of 250 °C. In situ x-ray photoelectron spectroscopy (XPS) analysis revealed that the ALD process did not induce additional Si–O bonding at the STO-Si interface. Postdeposition XPS analysis also revealed sporadic carbon incorporation in the as-deposited films. However, annealing at a temperature of 250 °C for 30 min in moderate to high vacuum (10−6–10−9 Torr) removed the carbon species. Higher annealing temperatures (>275 °C) gave rise to a small increase in Si–O bonding, as indicated by XPS, but no reduced Ti species were observed. X-ray diffraction revealed that the as-deposited STO films were c-axis oriented and fully crystalline. A rocking curve around the STO(002) reflection gave a full width at half maximum of 0.30° ± 0.06° for film thicknesses ranging from 5 to 25 nm. Cross-sectional transmission electron microscopy revealed that the STO films were continuous with conformal growth to the substrate and smooth interfaces between the ALD- and MBE-grown STO. Overall, the results indicate that thick, crystalline STO can be grown on Si(001) substrates by ALD with minimal formation of an amorphous SiOx layer using a four-unit-cell STO buffer layer grown by MBE to serve as the surface template.

  10. Cathodic arc grown niobium films for RF superconducting cavity applications

    Science.gov (United States)

    Catani, L.; Cianchi, A.; Lorkiewicz, J.; Tazzari, S.; Langner, J.; Strzyzewski, P.; Sadowski, M.; Andreone, A.; Cifariello, G.; Di Gennaro, E.; Lamura, G.; Russo, R.

    2006-07-01

    Experimental results on the characterization of the linear and non-linear microwave properties of niobium film produced by UHV cathodic arc deposition are presented. Surface impedance Zs as a function of RF field and intermodulation distortion (IMD) measurement have been carried out by using a dielectrically loaded resonant cavity operating at 7 GHz. The experimental data show that these samples have a lower level of intrinsic non-linearities at low temperature and low circulating power in comparison with Nb samples grown by sputtering. These results make UHV cathodic arc deposition a promising technique for the improvement of RF superconducting cavities for particle accelerators.

  11. Cathodic arc grown niobium films for RF superconducting cavity applications

    Energy Technology Data Exchange (ETDEWEB)

    Catani, L. [INFN-Roma2, Rome (Italy); Cianchi, A. [INFN-Roma2, Rome (Italy); Lorkiewicz, J. [INFN-Roma2, Rome (Italy); Tazzari, S. [Universita di Roma ' Tor Vergata' and INFN-Roma2, Rome (Italy); Langner, J. [Soltan Institute for Nuclear Studies, Swierk (Poland); Strzyzewski, P. [Soltan Institute for Nuclear Studies, Swierk (Poland); Sadowski, M. [Soltan Institute for Nuclear Studies, Swierk (Poland); Andreone, A. [University of Napoli ' Federico II' and INFN-NA, Naples (Italy); Cifariello, G. [University of Napoli ' Federico II' and INFN-NA, Naples (Italy); Di Gennaro, E. [University of Napoli ' Federico II' and INFN-NA, Naples (Italy); Lamura, G. [University of Napoli ' Federico II' and INFN-NA, Naples (Italy); Russo, R. [Seconda Universita di Napoli, INFN-NA, Naples (Italy)

    2006-07-15

    Experimental results on the characterization of the linear and non-linear microwave properties of niobium film produced by UHV cathodic arc deposition are presented. Surface impedance Z {sub s} as a function of RF field and intermodulation distortion (IMD) measurement have been carried out by using a dielectrically loaded resonant cavity operating at 7 GHz. The experimental data show that these samples have a lower level of intrinsic non-linearities at low temperature and low circulating power in comparison with Nb samples grown by sputtering. These results make UHV cathodic arc deposition a promising technique for the improvement of RF superconducting cavities for particle accelerators.

  12. Fabrication of Ni-B alloy coated vapor-grown carbon nanofibers by electroless deposition

    OpenAIRE

    Arai, Susumu; Imoto, Yuzo; Suzuki, Yosuke; Endo, Morinobu

    2011-01-01

    Ni-B alloy coated vapor-grown carbon nanofibers (VGCNFs) were fabricated by electroless deposition and their microstructures were investigated. The effects of heat treatment on the coated VGCNFs were also studied. VGCNFs could be coated with a homogeneous Ni-B alloy film using a plating bath containing dimethylaminoborane (DMAB) as a reducing agent. The boron content of the Ni-B alloy film could be varied from 14 to 24 atom% B by varying the DMAB concentration of the plating bath. The VGCNFs ...

  13. Carbon film and its applications

    International Nuclear Information System (INIS)

    Diamond like carbon was prepared by the decomposition of methane in a microwave discharge. The effect of dilution gases, such as hydrogen, argon and helium, on the deposition was examined in the light of the identification of the deposits and the results of plasma diagnostics. When hydrogen was added, diamond like particles including large amounts of hydrogen were obtained. Diamond like films including graphitic carbon and a smaller amount of hydrogen were deposited from the methane-argon plasma. The correlation between the deposit and species present in the plasma is discussed. The deposition of diamond like carbon not including graphitic carbon from the methane-hydrogen plasma was succeeded because of the formation of CH3 radicals having sp3 hybrid orbital of carbon for diamond formation from the plasma and a removal of graphitic carbon from the deposit by sputtering. (author)

  14. Carbon nanotubes grown on bulk materials and methods for fabrication

    Science.gov (United States)

    Menchhofer, Paul A.; Montgomery, Frederick C.; Baker, Frederick S.

    2011-11-08

    Disclosed are structures formed as bulk support media having carbon nanotubes formed therewith. The bulk support media may comprise fibers or particles and the fibers or particles may be formed from such materials as quartz, carbon, or activated carbon. Metal catalyst species are formed adjacent the surfaces of the bulk support material, and carbon nanotubes are grown adjacent the surfaces of the metal catalyst species. Methods employ metal salt solutions that may comprise iron salts such as iron chloride, aluminum salts such as aluminum chloride, or nickel salts such as nickel chloride. Carbon nanotubes may be separated from the carbon-based bulk support media and the metal catalyst species by using concentrated acids to oxidize the carbon-based bulk support media and the metal catalyst species.

  15. Carbon incorporation in AlGaAs grown by CBE

    Science.gov (United States)

    Lee, B. J.; Houng, Y. M.; Miller, J. N.; Turner, J. E.

    1990-10-01

    The incorporation of carbon into unintentionally doped Al xGa 1- xAs epilayers grown by chemical beam epitaxy (CBE) using arsine and various combinations of group III sources was investigated. Growth of unintentionally doped Al xGa 1- xAs using triethylgallium (TEGa)+triisobutylaluminum (TIBAl) resulted in lower hole and carbon concentrations than those grown from TEGa+triethylaluminum (TEAl). The carbon concentration in AlGaAs epilayers increased with decreasing growth temperature below 560°C and increased with increasing growth temperature above 560°C. This "U-shaped" dependence of carbon concentration on growth temperature exhibited its minimum value at ˜ 560°C for both the TEGa+TEAl and TEGa+TIBAl systems. The alkyl-Al compounds are thought to be the controlling species for the carbon incorporation in the low temperature regime, while the AlCH 3 formed through β-methyl elimination is responsible for the carbon incorporation in the high temperature regime. Based on this study, we are able to grow high quality AlGaAs epilayers with reduced carbon contamination by using TIBAl instead of TEAl at the growth temperature of 560°C with a V/III ratio of 20. AlGaAs/GaAs modulation-doped structures grown from TEGa+TIBAl show a two-dimensional electron gas mobility as high as 88,600 cm 2/V·s at 77 K, which is a 40% improvement over that grown from TEGa+TEAl, with a sheet carrier concentration of 6x10 11 cm -2 and a spacer layer thickness of 150 Å.

  16. Laser annealing of amorphous carbon films

    International Nuclear Information System (INIS)

    Amorphous (a-C) Carbon thin films were deposited, using pulsed laser deposition (PLD) with a Nd:YAG laser (1064 nm, 7 ns), from a pyrolytic graphite target, on silicon and refractory metal (Mo) substrates to a film thickness of 55, 400 and 500 nm. Samples were grown at RT and then annealed by a laser annealing technique, to reduce residual stress and induce a locally confined 'graphitization' process. The films were exposed to irradiation, in vacuum, by a Nd:YAG pulsed laser, operating at different wavelengths (VIS, N-UV) and increasing values of energy from 6-100 mJ/pulse. The thinner films were completely destroyed by N-UV laser treatment also at lower energies, owing to the almost direct propagation of heat to the Si substrate with melting and ruinous blistering effects. For thicker films the Raman micro-analysis evidenced the influence of laser treatments on the sp3/sp2 content evolution, and established the formation of aromatic nano-structures of average dimension 4.1-4.7 nm (derived from the ID/IG peak ratio), at fluence values round 50 mJ/cm2 for N-UV and 165 mJ/cm2 for VIS laser irradiation. Higher fluences were not suitable for a-Carbon 'graphitization', since a strong ablation process was the prominent effect of irradiation. Grazing incidence XRD (GI-XRD) used to evaluate the dimension and texturing of nano-particles confirmed the findings of Raman analysis. The effects of irradiation on surface morphology were studied by SEM analysis

  17. Transparent ultrathin conducting carbon films

    International Nuclear Information System (INIS)

    Ultrathin conductive carbon layers (UCCLs) were created by spin coating resists and subsequently converting them to conductive films by pyrolysis. Homogeneous layers as thin as 3 nm with nearly atomically smooth surfaces could be obtained. Layer characterization was carried out with the help of atomic force microscopy, profilometry, four-point probe measurements, Raman spectroscopy and ultraviolet-visible spectroscopy. The Raman spectra and high-resolution transmission electron microscopy image indicated that a glassy carbon like material was obtained after pyrolysis. The electrical properties of the UCCL could be controlled over a wide range by varying the pyrolysis temperature. Variation in transmittance with conductivity was investigated for applications as transparent conducting films. It was observed that the layers are continuous down to a thickness below 10 nm, with conductivities of 1.6 x 104 S/m, matching the best values observed for pyrolyzed carbon films. Further, the chemical stability of the films and their utilization as transparent electrochemical electrodes has been investigated using cyclic voltammetry and electrochemical impedance spectroscopy.

  18. Doping of high quality c-BN films epitaxially grown on top of diamond(001)

    Energy Technology Data Exchange (ETDEWEB)

    Yin, Hong; Wang, Xuyang; Pongrac, Ivan; Ziemann, Paul [Institut fuer Festkoerperphysik, Universitaet Ulm (Germany); Renaux, Fabian; Hecq, Michel; Bittencourt, Carla [University of Mons-Hainaut, Mons (Belgium)

    2008-07-01

    Since it first synthesis in 1957 cubic boron nitride (c-BN) has attracted considerable interest due to its extreme physical and chemical properties. Besides as a superhard material second to diamond, it exhibits a wide band gap (6.4 eV) and high thermal conductivity making c-BN attractive as a high temperature electronic material. The recently achieved heteroepitaxial growth of c-BN films on top of diamond(001) opened a promising window for e.g. c-BN/diamond pn-junctions. We present results on the doping of high quality c-BN samples epitaxially grown on to diamond(001). XPS combined with ToF-SIMS results showed that metallic impurities within such epitaxial films are below several ppm leaving carbon and oxygen as the main impurities, which are homogeneously distributed inside the film. As a result, the nominally undoped c-BN films are p-type conducting as revealed by Hall effect. Si{sup +} was chosen to dope these epitaxial c-BN films by either in-situ adding Si{sup +} during film growth, or ex-situ doping by cold implantation and rapid thermal annealing (CIRA). In both cases, the electrical resistance of the samples is significantly decreased. Hall effect measurements indicate a related n-type conduction.

  19. Superconducting YBa sub 2 Cu sub 3 O sub 7 thin films grown in-situ by ion beam CO-deposition

    Energy Technology Data Exchange (ETDEWEB)

    Kellett, B.K.; James, J.H.; Gauzzi, A.; Dwir, B.; Pavuna, D. (Inst. of Micro and Optoelectronics, Dept. of Physics, Federal Inst. of Tech., Lausanne (Switzerland))

    1989-12-01

    Superconducting YBCO thin films have been grown in-situ by three ion beam co-deposition sputtering. Both metal and oxide targets of Cu and Y and BaF{sub 2} and BaCO{sub 3} targets have been investigated. Film composition was determined by RBS and AES analysis. Films grown using BaF{sub 2} show fluorine contamination, whereas the carbon concentration in films grown using BaCO{sub 3} is beneath the Auger detection limit. Superconducting films have been grown on SrTiO{sub 3} (T{sub co}=78K) and on Si with SiO{sub 2} or Y{sub 2}O{sub 3} buffer layers (T{sub co}=35K). (orig.).

  20. Deposition of diamondlike carbon films

    Science.gov (United States)

    Mirtich, M. J.; Sovey, J. S.; Banks, B. A. (Inventor)

    1984-01-01

    A diamondlike carbon film is deposited in the surface of a substrate by exposing the surface to an argon ion beam containing a hydrocarbon. The current density in the ion beam is low during initial deposition of the film. Subsequent to this initial low current condition, the ion beam is increased to full power. At the same time, a second argon ion beam is directed toward the surface of the substrate. The second ion beam has an energy level much greater than that of the ion beam containing the hydrocarbon. This addition of energy to the system increases mobility of the condensing atoms and serves to remove lesser bound atoms.

  1. Physical properties of chemical vapour deposited nanostructured carbon thin films

    Energy Technology Data Exchange (ETDEWEB)

    Mahadik, D.B.; Shinde, S.S.; Bhosale, C.H. [Electrochemical Materials Laboratory, Department of Physics, Shivaji University, Kolhapur, Maharashtra 416004 (India); Rajpure, K.Y., E-mail: rajpure@yahoo.com [Electrochemical Materials Laboratory, Department of Physics, Shivaji University, Kolhapur, Maharashtra 416004 (India)

    2011-02-03

    Research highlights: In the present paper, nanostructured carbon films are grown using a natural precursor 'turpentine oil (C{sub 10}H{sub 16})' as a carbon source in the simple thermal chemical vapour deposition method. The influence of substrate surface topography (viz. stainless steel, fluorine doped tin oxide coated quartz) and temperature on the evolution of carbon allotropes surfaces topography/microstructural and structural properties are investigated and discussed. - Abstract: A simple thermal chemical vapour deposition technique is employed for the deposition of carbon films by pyrolysing the natural precursor 'turpentine oil' on to the stainless steel (SS) and FTO coated quartz substrates at higher temperatures (700-1100 deg. C). In this work, we have studied the influence of substrate and deposition temperature on the evolution of structural and morphological properties of nanostructured carbon films. The films were characterized by using X-ray diffraction (XRD), scanning electron microscopy (SEM), contact angle measurements, Fourier transform infrared (FTIR) and Raman spectroscopy techniques. XRD study reveals that the films are polycrystalline exhibiting hexagonal and face-centered cubic structures on SS and FTO coated glass substrates respectively. SEM images show the porous and agglomerated surface of the films. Deposited carbon films show the hydrophobic nature. FTIR study displays C-H and O-H stretching vibration modes in the films. Raman analysis shows that, high ID/IG for FTO substrate confirms the dominance of sp{sup 3} bonds with diamond phase and less for SS shows graphitization effect with dominant sp{sup 2} bonds. It reveals the difference in local microstructure of carbon deposits leading to variation in contact angle and hardness, which is ascribed to difference in the packing density of carbon films, as observed also by Raman.

  2. Film quality improvement of CIGS thin film grown by mechanochemical process

    International Nuclear Information System (INIS)

    We have demonstrated a selenium treatment to enhance the film quality of CIGS films prepared by a mechanochemical process (MCP). It was confirmed that the selenium treatment was useful process in order to improve the film quality by enhancing the sintering and the grain growth. Although the film quality was improved, a selenium layer was deposited on CIGS surface during the selenium treatment. Consequently we developed a selenium removal technique using a Hot Filament Melting (HFM) process, and we succeeded in removing the remained selenium layer on the surface. These results suggested that the selenium treatment followed by the HFM process was useful to improve the film quality grown by the MCP. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  3. Structural and dielectric properties of Fe-substituted BST thin films grown by laser ablation

    International Nuclear Information System (INIS)

    BST thin films are grown by pulsed laser deposition technique at different temperatures and different oxygen deposition pressures. X-ray diffraction studies confirm the perovskite phase of the films. From the ε'-V characteristic tunability is calculated and the films grown at lower oxygen deposition pressure is found have higher tunability which is explained in terms of stress developed in the film and oxygen vacancies formed during deposition. The ε'-V variation is explained in terms of Devonshire's phenomenological theory

  4. MgB{sub 2} thin films grown on graphene/Ni–Mo alloy system

    Energy Technology Data Exchange (ETDEWEB)

    Linghu, Kehuan, E-mail: linghukehuan@126.com [School of Physics and State Key Laboratory for Artificial Structure and Mesoscopic Physics, Peking University, Beijing 100871 (China); Song, Qingjun [School of Physics and State Key Laboratory for Artificial Structure and Mesoscopic Physics, Peking University, Beijing 100871 (China); Collaborative Innovation Center of Quantum Matter, Beijing 100871 (China); Zhang, Huai [School of Physics and State Key Laboratory for Artificial Structure and Mesoscopic Physics, Peking University, Beijing 100871 (China); Yang, QianQian [College of Applied Sciences, Beijing University of Technology, Beijing 100124 (China); Zhang, Jibo; Wu, Qianhong; Nie, Ruijuan [School of Physics and State Key Laboratory for Artificial Structure and Mesoscopic Physics, Peking University, Beijing 100871 (China); Dai, Lun [School of Physics and State Key Laboratory for Artificial Structure and Mesoscopic Physics, Peking University, Beijing 100871 (China); Collaborative Innovation Center of Quantum Matter, Beijing 100871 (China); Feng, Qingrong; Wang, Furen [School of Physics and State Key Laboratory for Artificial Structure and Mesoscopic Physics, Peking University, Beijing 100871 (China)

    2015-09-15

    Highlights: • Depositing MgB{sub 2} thin films on graphene/Ni–Mo alloy substrate by HPCVD is a completely new method. • The growth of MgB{sub 2} thin films in this system lays a good foundation of depositing MgB{sub 2} thick films. • We directly deposite MgB{sub 2} films on graphene(without transferring) which keeps graphene’s original morphology and properties. - Abstract: 200 nm Ni film is coated on 25 μm thick Mo foil, and graphene is grown on the Ni–Mo system by CVD method. After the annealing process of CVD, the Ni/Mo bilayer transforms into Ni–Mo alloy, then we have successfully fabricated MgB{sub 2} films on graphene/Ni–Mo alloy system via the hybrid physical–chemical vapor deposition (HPCVD) technique. The transition temperature T{sub c} onset is 38.25 K with a corresponding transition width of 0.75 K. The average thickness of MgB{sub 2} films is 200 nm (25% concentration B{sub 2}H{sub 6}). The critical current density derives from the magnetization measurement at 5 K is, j{sub c} (5 K, 0 T) = 9.6 × 10{sup 6} A/cm{sup 2}. We can easily deposite MgB{sub 2} on graphene/Ni–Mo alloy system with a lower B{sub 2}H{sub 6} concentration and less gas flow, which lays a good foundation for depositing MgB{sub 2} thick films. The graphene in this system is multilayer and with defects, it may act like an intermediary film for the growth of MgB{sub 2}, or a carbon-doping source.

  5. Graphene film formation on insulating substrates using polymer films as carbon source

    International Nuclear Information System (INIS)

    Graphene films were formed on sapphire surfaces using polymethylmethacrylate (PMMA) polymer films as a carbon source and characterized by Raman spectroscopy. For large-scale, uniform growth, a spin-on-glass (SOG)/Cu-catalyst/PMMA/sapphire layered structure was annealed in Ar–H2 flow at atmospheric pressure. We found that the SOG cover layer is effective to suppress evaporation and agglomeration of the Cu film. We also confirmed that morphology and quality of grown graphene films are dramatically improved by hydrogen etching of buried bulky carbon produced by the polymer pyrolysis at the Cu/sapphire interfaces. Quality of graphene films grown at the catalyst-layer/sapphire interface was compared with that on the catalyst surface using Ni/PMMA, PMMA/Ni and Ni/PMMA/Ni layered structures. Quality of graphene films grown at the Ni/sapphire interfaces was found to be lower than that on the Ni surfaces, suggesting that strain engineering at the buried Ni/graphene/sapphire interfaces and/or etching technique to remove the wastes of polymer pyrolysis should be improved. (paper)

  6. Pt doping mechanism of vanadium oxide cathode film grown on ITO glass for thin film battery

    Energy Technology Data Exchange (ETDEWEB)

    Kim, H.K; Seong, T.Y. [Kwangju Institute of Science and Technology, Kwangju (Korea); Jeon, E.J.; Cho, W.I.; Yoon, Y.S. [Korea Institute of Science and Technology, Seoul (Korea)

    2001-01-01

    An all solid-state thin film battery (TFB) was fabricated by growing, undoped and Pt-doped vanadium oxide cathode film (V{sub 2}O{sub 5}) on In{sub 2}O{sub 3}:Sn coated glass, respectively. Room temperature charge-discharge measurements based on Li/Lipon/V{sub 2}O{sub 5} full-cell structure with a constant current clearly shows that the Pt-doped V{sub 2}O{sub 5} cathode film is superior, in terms of cyclibility. X-ray diffraction (XRD) results indicate that the pt doping process induces a more random amorphous structure than an undoped V{sub 2}O{sub 5} film. In addition to its modified structure, the Pt-doped V{sub 2}O{sub 5} film has a smoother surface than the undoped sample. Compared to an undoped V{sub 2}O{sub 5} film, the Pt doped V{sub 2}O{sub 5} cathode film has a higher electron conductivity. We hypothesize that the addition of Pt alters electrochemical performance in a manner of making more random amorphous structure and gives an excess electron by replacing the V{sup +5}. Possible mechanisms are discussed for the observed Pt doping effect on structural and electrochemical properties of vanadium oxide cathode films, which are grown on In{sub 2}O{sub 3}:Sn coated glass. (author). 16 refs., 1 tab. 9 figs.

  7. Structural anisotropy of magnetically aligned single wall carbon nanotube films

    International Nuclear Information System (INIS)

    Thick films of aligned single wall carbon nanotubes and ropes have been produced by filtration/deposition from suspension in strong magnetic fields. We measured mosaic distributions of rope orientations in the film plane, for samples of different thicknesses. For an ∼1 μm film the full width at half maximum (FWHM) derived from electron diffraction is 25 degree sign -28 degree sign . The FWHM of a thicker film (∼7 μm) measured by x-ray diffraction is slightly broader, 35±3 degree sign . Aligned films are denser than ordinary filter-deposited ones, and much denser than as-grown material. Optimization of the process is expected to yield smaller FWHMs and higher densities. (c) 2000 American Institute of Physics

  8. Evidence that an internal carbonic anhydrase is present in 5% CO2-grown and air-grown Chlamydomonas

    International Nuclear Information System (INIS)

    Inorganic carbon (C/sub i/) uptake was measured in wild-type cells of Chlamydomonas reinhardtii, and in cia-3, a mutant strain of C. reinhardtii that cannot grow with air levels of CO2. Both air-grown cells, that have a CO2 concentrating system, and 5% CO2-grown cells that do not have this system, were used. When the external pH was 5.1 or 7.3, air-grown, wild-type cells accumulated inorganic carbon (C/sub i/) and this accumulation was enhanced when the permeant carbonic anhydrase inhibitor, ethoxyzolamide, was added. When the external pH was 5.1, 5% CO2-grown cells also accumulated some C/sub i/, although not as much as air-grown cells and this accumulation was stimulated by the addition of ethoxyzolamide. At the same time, ethoxyzolamide inhibited CO2 fixation by high CO2-grown, wild-type cells at both pH 5.1 and 7.3. These observations imply that 5% CO2-grown, wild-type cells, have a physiologically important internal carbonic anhydrase, although the major carbonic anhydrase located in the periplasmic space is only present in air-grown cells. Inorganic carbon uptake by cia-3 cells supported this conclusion. This mutant strain, which is thought to lack an internal carbonic anhydrase, was unaffected by ethoxyzolamide at pH 5.1. Other physiological characteristics of cia-3 resemble those of wild-type cells that have been treated with ethoxyzolamide. It is concluded that an internal carbonic anhydrase is under different regulatory control than the periplasmic carbonic anhydrase

  9. Three-layer antireflection diamond-like carbon films on glass

    International Nuclear Information System (INIS)

    Three-layered diamond-like carbon films were grown on the glass from decomposition of toluene and nitrogen by Plasma Enhanced Chemical Vapor Deposition technique. Using the generalized transfer-matrix technique, the optimal parameters of three-layered structures, for which the reflection in the range of 400-750 nm has a minimum, were calculated theoretically. A dependence of the grown films refractive index on the plasma power and nitrogen concentration in the gas mixture was investigated

  10. Anisotropic conductivity of silver thin films grown on silicon (100) vicinal surfaces

    OpenAIRE

    López-Ríos, T.; Briggs, A.; Guillet, S.; Baró, A.M.; Luna, Mónica

    1995-01-01

    The electrical conductivity between 4 and 300 K of Ag thin films (up to 30 mm grown at room temperature on Si(100) vicinal surfaces has been measured and their morphology imaged with an atomic force microscope. A noticeable anisotropy of the resistivity of the films which is related to the structure of the films has been found)

  11. Effects of acetylene flow rate and processing temperature on graphene films grown by thermal chemical vapor deposition

    International Nuclear Information System (INIS)

    We used thermal chemical vapor deposition (CVD) to synthesize few-layer graphene (FLG) films at a low temperature (600 °C). The FLG films were synthesized on Ni foils using a gaseous mixture of various ratios of H2 to acetylene (C2H2). We investigated that the effects of C2H2 flow on the structural properties of graphene. The quality of low-temperature CVD FLG films was investigated by Raman spectroscopy, field-emission scanning electron microscopy, and high-resolution transmission electron microscopy. The results of Raman spectroscopy revealed that C2H2 flux clearly influences the features of FLG films. To enhance the quality of FLG films grown by low-temperature CVD, the films were grown under various gas flow ratios. The results demonstrated that the common thermal CVD method that uses C2H2 as a supplemental carbon source constitutes a low-cost and easy way to synthesize graphene films at low temperature for graphene-based applications. - Highlights: • We synthesized the graphene on nickel foil by thermal CVD method. • The graphene was successfully synthesized at a low temperature of 600 °C. • The acetylene flows were controlled to enhance the quality of graphene

  12. Defect Characterization in Ge/(001)Si Epitaxial Films Grown by Reduced-Pressure Chemical Vapor Deposition

    Science.gov (United States)

    Bharathan, Jayesh; Narayan, Jagdish; Rozgonyi, George; Bulman, Gary E.

    2013-10-01

    We studied the microstructural characteristics and electrical properties of epitaxial Ge films grown on Si(001) substrates by x-ray diffraction, atomic force microscopy, and transmission electron microscopy. The films were grown using a two-step technique by reduced-pressure chemical vapor deposition, where the first step promotes two-dimensional growth at a lower substrate temperature. We observed a decrease in defect density with increasing film thickness. Ge films with thickness of 3.5 μm exhibited threading dislocation densities of 5 × 106 cm-2, which yielded devices with dark current density of 5 mA cm-2 (1 V reverse bias). We also noted the presence of stacking faults in the form of lines in the films and establish that this is an important defect for Ge films grown by this deposition technique.

  13. Vertical single- and double-walled carbon nanotubes grown from modified porous anodic alumina templates

    International Nuclear Information System (INIS)

    Vertical single-walled and double-walled carbon nanotube (SWNT and DWNT) arrays have been grown using a catalyst embedded within the pore walls of a porous anodic alumina (PAA) template. The initial film structure consisted of a SiOx adhesion layer, a Ti layer, a bottom Al layer, a Fe layer, and a top Al layer deposited on a Si wafer. The Al and Fe layers were subsequently anodized to create a vertically oriented pore structure through the film stack. CNTs were synthesized from the catalyst layer by plasma-enhanced chemical vapour deposition (PECVD). The resulting structure is expected to form the basis for development of vertically oriented CNT-based electronics and sensors

  14. Microwave plasma CVD technology of carbon and carbon-nitrogen films

    International Nuclear Information System (INIS)

    Carbon and carbon-nitrogen films have been deposited by Microwave Plasma Chemical Vapor Deposition at 2.45 GHz. During the process methane-argon-hydrogen-nitrogen atmospheres were used. The films were grown in a wide temperature range from the room temperature up to 950oC in total gas pressure from 0.1 to 0.5 Tr. The materials were examined by means of FTIR and optical spectroscopy. The authors investigated the influence of technological conditions on composition, structure and optical properties. The chemical composition of films depended on the substrate temperature and plasma content. The carbon hydrogen bonds intensity decreased strongly at elevated temperature.The process of degradation of mechanical properties was also observed. The results indicate that there is a possibility of mechanical and electronic applications of these materials. (author)

  15. Residual stress stability in fiber textured stoichiometric AlN film grown using rf magnetron sputtering

    International Nuclear Information System (INIS)

    The authors report on the stability of mechanical stress with aging and thermal cycling for columnar structured stoichiometric and homogeneous aluminum nitride thin films grown using radio frequency magnetron sputtering technique. The set of deposition parameters were optimized for the best possible orientation of crystallites in the c axis of compositionally stoichiometric films. The as-grown stress in the slightly nitrogen-rich film does not change when exposed to the atmosphere following deposition, while that in the nitrogen-deficient film, it changes due to oxidation. Additionally, the magnitude of as-grown stress has been found to depend on the substrate material in addition to the deposition parameters. The stress in the film grown on a Si(001) substrate was more tensile than in the film grown on a semi-insulating (si) GaAs(001) substrate for a given set of deposition parameters. Furthermore, the stress in the film grown on Si decreased with temperature, while that on si GaAs increased, indicating the thermally induced stress component to be the major component in the residual stress. Upon subsequent cooling the stress changes in both substrates followed the same path as of heating, thus exhibiting no hysteresis with thermal cycles between room temperature and 400 deg. C.

  16. Structural transformation of vapor grown carbon nanofibers studied by HRTEM

    International Nuclear Information System (INIS)

    Vapor grown carbon nanofibers have been extensively manufactured and investigated in recent years. In this study commercially available vapor grown carbon nanofibers subjected to different processing and post processing conditions were studied employing high resolution TEM images. The analysis showed that the fibers consist primarily of conical nanofibers, but can contain a significant amount of bamboo nanofibers. Most conical nanofibers were found to consist of an ordered inner layer and a disordered outer layer, with the cone angle distribution of the inner layers indicating that these cannot have a stacked cone structure but are compatible with a cone-helix structure. Fibers that have been heat treated to temperatures above 1,500 oC undergo a structural transformation with the ordered inner layers changing from a cone-helix structure to a highly ordered multiwall stacked cone structure. The bamboo nanofibers were found to have a tapered multiwall nanotube structure for the wall and a multishell fullerene structure for the cap of each segment, surrounded by a disordered outer layer. When these fibers are heat treated the disordered outer layers transform to an ordered multiwall nanotube structure and merge with the wall of each segment. The end caps of each segment transform from a smooth multiwall fullerene structure to one consisting of disjointed graphene planes. A reaction-diffusion mechanism is proposed to explain the growth and structure of the bamboo nanofibers.

  17. Textured YBCO films grown on wires: application to superconducting cables

    International Nuclear Information System (INIS)

    Efforts to fabricate superconducting wires made of YBa2Cu3O7 (YBCO) on La2Zr2O7 (LZO) buffered and biaxially textured Ni-5 at.%W (NiW) are described. Wires were manually shaped from LZO buffered NiW tapes. Different diameters were produced: 1.5, 2 and 3 mm. The wires were further covered with YBCO grown by metal organic chemical vapor deposition (MOCVD). We developed an original device in which the round substrate undergoes an alternated rotation of 180° around its axis in addition to a reel-to-reel translation. This new approach allows covering the whole circumference of the wire with a YBCO layer. This was confirmed by energy dispersive x-ray spectroscopy (EDX) analysis coupled to a scanning electron microscope (SEM). For all wire diameters, the YBCO layer thickness varied from 300 to 450 nm, and the cationic composition was respected. Electron backscattering diffraction (EBSD) measurements were performed directly on an as-deposited wire without surface preparation allowing the investigation of the crystalline quality of the film surface. Combining EBSD with XRD results we show that YBCO grows epitaxially on the LZO buffered NiW wires. For the first time, superconductive behaviors have been detected on round substrates in both the rolling and circular direction. Jc reached 0.3 MA cm−2 as measured at 77 K by transport and third-harmonic detection. Those preliminary results confirm the effectiveness of the MOCVD for complex geometries, especially for YBCO deposition on small diameter wires. This approach opens huge perspectives for the elaboration of a new generation of YBCO-based round conductors. (paper)

  18. Vapor Phase Sensing Using Metal Nanorod Thin Films Grown by Cryogenic Oblique Angle Deposition

    Directory of Open Access Journals (Sweden)

    Piyush Shah

    2013-01-01

    Full Text Available We demonstrate the chemical sensing capability of silver nanostructured films grown by cryogenic oblique angle deposition (OAD. For comparison, the films are grown side by side at cryogenic (~100 K and at room temperature (~300 K by e-beam evaporation. Based on the observed structural differences, it was hypothesized that the cryogenic OAD silver films should show an increased surface enhanced Raman scattering (SERS sensitivity. COMSOL simulation results are presented to validate this hypothesis. Experimental SERS results of 4-aminobenzenethiol (4-ABT Raman test probe molecules in vapor phase show good agreement with the simulation and indicate promising SERS applications for these nanostructured thin films.

  19. Micro-porous TiO2 thin films grown on surface of Ti substrate

    Institute of Scientific and Technical Information of China (English)

    WU Xiao-hong; QIN Wei; JIANG Zhao-hua; HU Xin-guo; Li Qing-fen

    2004-01-01

    Microporous titanium dioxide thin films have been grown on titanium plates by the micro-plasma oxidation method with different current densities (4, 6, 10 and 14 A/dm2). X-ray diffraction, scanning electronic microscopy and UV-Vis spectrophotometry were used to characterize the films. It is found that the films grown are microporous and consist of crystalline titanium dioxide. The micropore size and the content of anatase and rutile TiO2 phase increase with the applied voltage. The relatively higher degradation efficiency for rhodamine B is obtained in the film produced with a current density of 10 A/dm2.

  20. Structural and optical properties of ZnS thin film grown by pulsed electrodeposition

    Energy Technology Data Exchange (ETDEWEB)

    Hennayaka, H.M.M.N.; Lee, Ho Seong, E-mail: hs.lee@knu.ac.kr

    2013-12-02

    ZnS thin films were grown on indium–tin-oxide coated glass substrates using pulsed electrodeposition and the effect of the deposition temperature on the structural and optical properties of the ZnS films was investigated. Polycrystalline cubic ZnS films were obtained at all the deposition temperatures. At temperatures below 70 °C, less dense films were obtained and particle agglomeration was visible. On the other hand, at temperatures above 70 °C, more dense films with well-defined grains were obtained. With increasing deposition temperatures, the optical transmittance and bandgap of the ZnS films decreased. These results are attributed to the increase in the thickness of ZnS films and their particle size. The ZnS films grown at 90 °C exhibited the highly (200) preferred orientation and n-type conductivity with a wide bandgap of 3.75 eV. - Highlights: • This study describes the effect of the deposition temperature on the growth of the ZnS thin films. • ZnS thin films were grown using pulsed electrodeposition. • ZnS thin films exhibited the good crystal quality and chemical composition. • ZnS thin films exhibited n-type conductivity with a wide bandgap of 3.75 eV.

  1. Post-annealing effects on pulsed laser deposition-grown GaN thin films

    Energy Technology Data Exchange (ETDEWEB)

    Cheng, Yu-Wen; Wu, Hao-Yu; Lin, Yu-Zhong; Lee, Cheng-Che; Lin, Ching-Fuh, E-mail: lincf@ntu.edu.tw

    2015-02-27

    In this work, the post-annealing effects on gallium nitride (GaN) thin films grown from pulsed laser deposition (PLD) are investigated. The as-deposited GaN thin films grown from PLD are annealed at different temperatures in nitrogen ambient. Significant changes of the GaN crystal properties are observed. Raman spectroscopy is used to observe the crystallinity, the change of residual stress, and the thermal decomposition of the annealed GaN thin films. X-ray diffraction is also applied to identify the crystal phase of GaN thin films, and the surface morphology of GaN thin films annealed at different temperatures is observed by scanning electron microscopy. Through the above analyses, the GaN thin films grown by PLD undergo three stages: phase transition, stress alteration, and thermal decomposition. At a low annealing temperature, the rock salt GaN in GaN films is transformed into wurtzite. The rock salt GaN diminishes with increasing annealing temperature. At a medium annealing temperature, the residual stress of the film changes significantly from compressive strain to tensile strain. As the annealing temperature further increases, the GaN undergoes thermal decomposition and the surface becomes granular. By investigating the annealing temperature effects and controlling the optimized annealing temperature of the GaN thin films, we are able to obtain highly crystalline and strain-free GaN thin films by PLD. - Highlights: • The GaN thin film is grown on sapphire by pulsed laser deposition. • The GaN film undergoes three stages with increasing annealing temperature. • In the first stage, the film transfers from rock salt to wurtzite phase. • In the second stage, the stress in film changes from compressive to tensile. • In the final stage, the film thermally decomposes and becomes granular.

  2. Post-annealing effects on pulsed laser deposition-grown GaN thin films

    International Nuclear Information System (INIS)

    In this work, the post-annealing effects on gallium nitride (GaN) thin films grown from pulsed laser deposition (PLD) are investigated. The as-deposited GaN thin films grown from PLD are annealed at different temperatures in nitrogen ambient. Significant changes of the GaN crystal properties are observed. Raman spectroscopy is used to observe the crystallinity, the change of residual stress, and the thermal decomposition of the annealed GaN thin films. X-ray diffraction is also applied to identify the crystal phase of GaN thin films, and the surface morphology of GaN thin films annealed at different temperatures is observed by scanning electron microscopy. Through the above analyses, the GaN thin films grown by PLD undergo three stages: phase transition, stress alteration, and thermal decomposition. At a low annealing temperature, the rock salt GaN in GaN films is transformed into wurtzite. The rock salt GaN diminishes with increasing annealing temperature. At a medium annealing temperature, the residual stress of the film changes significantly from compressive strain to tensile strain. As the annealing temperature further increases, the GaN undergoes thermal decomposition and the surface becomes granular. By investigating the annealing temperature effects and controlling the optimized annealing temperature of the GaN thin films, we are able to obtain highly crystalline and strain-free GaN thin films by PLD. - Highlights: • The GaN thin film is grown on sapphire by pulsed laser deposition. • The GaN film undergoes three stages with increasing annealing temperature. • In the first stage, the film transfers from rock salt to wurtzite phase. • In the second stage, the stress in film changes from compressive to tensile. • In the final stage, the film thermally decomposes and becomes granular

  3. LiFePO4 thin films grown by pulsed laser deposition: Effect of the substrate on the film structure and morphology

    International Nuclear Information System (INIS)

    Well crystallized and homogeneous LiFePO4/C (LFPO) thin films have been grown by pulsed laser deposition (PLD). The targets were prepared by the sol-gel process at 600 deg. C. The structure of the polycrystalline powders was analyzed with X-ray powder diffraction (XRD) data. The XRD patterns were indexed having a single phase olivine structure (Pnma). LFPO thin films have been deposited on three different substrates: aluminum (Al), stainless steel (SS) and silicon (Si) by pulsed laser deposition (PLD). The structure of the films was analyzed by X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM), transmission electron microscopy (TEM) and atomic force microscopy (AFM). It is found that the crystallinity of the thin films depends on the substrate temperature which was set at 500 deg. C. When annealed treatments were used, secondary phases were found, so, one step depositions at 500 deg. C were made. Stainless steel is demonstrated to be the best choice to act as substrate for phosphate deposition. LiFePO4 thin films grown on stainless steel plates exhibited the presence of carbon, inducing a slight conductivity enhancement that makes these films promising candidates as one step produced cathodes in Li-ion microbatteries.

  4. Intrinsic stress analysis of sputtered carbon film

    Institute of Scientific and Technical Information of China (English)

    Liqin Liu; Zhanshan Wang; Jingtao Zhu; Zhong Zhang; Moyan Tan; Qiushi Huang; Rui Chen; Jing Xu; Lingyan Chen

    2008-01-01

    Intrinsic stresses of carbon films deposited by direct current (DC) magnetron sputtering were investigated.The bombardments of energetic particles during the growth of films were considered to be the main reason for compressive intrinsic stresses.The values of intrinsic stresses were determined by measuring the radius of curvature of substrates before and after film deposition.By varying argon pressure and target-substrate distance,energies of neutral carbon atoms impinging on the growing films were optimized to control the intrinsic stresses level.The stress evolution in carbon films as a function of film thickness was investigated and a void-related stress relief mechanism was proposed to interpret this evolution.

  5. Opto-electrical properties of amorphous carbon thin film deposited from natural precursor camphor

    Energy Technology Data Exchange (ETDEWEB)

    Pradhan, Debabrata [Department of Chemistry, Indian Institute of Technology Bombay, Mumbai 400 076 (India)]. E-mail: dpradhan@sciborg.uwaterloo.ca; Sharon, Maheshwar [Department of Chemistry, Indian Institute of Technology Bombay, Mumbai 400 076 (India)

    2007-06-30

    A simple thermal chemical vapor deposition technique is employed for the pyrolysis of a natural precursor 'camphor' and deposition of carbon films on alumina substrate at higher temperatures (600-900 deg. C). X-ray diffraction measurement reveals the amorphous structure of these films. The carbon films properties are found to significantly vary with the deposition temperatures. At higher deposition temperature, films have shown predominately sp{sup 2}-bonded carbon and therefore, higher conductivity and lower optical band gap (Tauc gap). These amorphous carbon (a-C) films are also characterized with Raman and X-ray photoelectron spectroscopy. In addition, electrical and optical properties are measured. The thermoelectric measurement shows these as-grown a-C films are p-type in nature.

  6. Piezoresistive effect in carbon nanotube films

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    The piezoresistive effect of the pristine carbon nanotube (CNT) films has been studied. Carbon nanotubes were synthesized by hot filament chemical vapor deposition. The piezoresistive effect in the pristine CNT films was studied by a three-point bending test. The gauge factor for the pristine CNT films under 500 microstrains was found to be at least 65 at room temperature, and increased with temperature, exceeding that of polycrystalline silicon (30) at 35℃. The origin of the piezoresistivity in CNT films may be ascribed to a pressure-induced change in the band gap and the defects.

  7. Plasma deposition of amorphous hydrogenated carbon films on III-V semiconductors

    Science.gov (United States)

    Pouch, John J.; Warner, Joseph D.; Liu, David C.; Alterovitz, Samuel A.

    1988-01-01

    Amorphous hydrogenated carbon films were grown on GaAs, InP and fused silica substrates using plasmas generated from hydrocarbon gases. Methane and n-butane sources were utilized. The effects of flow rate and power density on film growth were investigated. Carbon was the major constituent in the films. The degree of asymmetry at the carbon-semiconductor interface was approximately independent of the power density. Different H-C bonding configurations were detected by the technique of secondary-ion mass spectrometry. Band gaps up to 3 eV were obtained from optical absorption studies. Breakdown strengths as high as 600 MV/m were measured.

  8. Microstructure of thermally grown and deposited alumina films probed with positrons

    Science.gov (United States)

    Somieski, Bertram; Hulett, Lester D.; Xu, Jun; Pint, Bruce A.; Tortorelli, Peter F.; Nielsen, Bent; Asoka-Kumar, Palakkal; Suzuki, Ryoichi; Ohdaira, Toshiyuki

    1999-03-01

    Aluminum oxide films used for corrosion protection of iron and nickel aluminides were generated by substrate oxidation as well as plasma and physical vapor depositions. The films grown by oxidation were crystalline. The others were amorphous. Defect structures of the films were studied by positron spectroscopy techniques. Lifetimes of the positrons, and Doppler broadening of the γ photons generated by their annihilation, were measured as functions of the energies with which they were injected. In this manner, densities and sizes of the defects were determined as functions of depths from the outer surfaces of the films. Alumina films generated by oxidation had high densities of open volume defects, mainly consisting of a few aggregated vacancies. In the outer regions of the films the structures of the defects did not depend on substrate compositions. Positron lifetime measurements, and the S and W parameters extracted from Doppler broadening spectra, showed uniform distributions of defects in the crystalline Al2O3 films grown on nickel aluminide substrates, but these data indicated intermediate layers of higher defect contents at the film/substrate interfaces of oxides grown on iron aluminide substrates. Amorphous films generated by plasma and physical vapor deposition had much larger open volume defects, which caused the average lifetimes of the injected positrons to be significantly longer. The plasma deposited film exhibited a high density of large cavities.

  9. Nanomechanical mapping of graphene layers and interfaces in suspended graphene nanostructures grown via carbon diffusion

    International Nuclear Information System (INIS)

    Graphene's remarkable mechanical, electronic and thermal properties are strongly determined by both the mechanism of its growth and its interaction with the underlying substrate. Evidently, in order to explore the fundamentals of these mechanisms, efficient nanoscale methods that enable observation of features hidden underneath the immediate surface are needed. In this paper we use nanomechanical mapping via ultrasonic force microscopy that employs MHz frequency range ultrasonic vibrations and allows the observation of surface composition and subsurface interfaces with nanoscale resolution, to elucidate the morphology of few layer graphene (FLG) films produced via a recently reported method of carbon diffusion growth (CDG) on platinum-metal based substrate. CDG is known to result in FLG suspended over large areas, which could be of high importance for graphene transfer and applications where a standalone graphene film is required. This study directly reveals the detailed mechanism of CDG three-dimensional growth and FLG film detachment, directly linking the level of graphene decoupling with variations of the substrate temperature during the annealing phase of growth. We also show that graphene initially and preferentially decouples at the substrate grain boundaries, likely due to its negative expansion coefficient at cooling, forming characteristic “nano-domes” at the intersections of the grain boundaries. Furthermore, quantitative nanomechanical mapping of flexural stiffness of suspended FLG “nano-domes” using kHz frequency range force modulation microscopy uncovers the progression of “nano-dome” stiffness from single to bi-modal distribution as CDG growth progresses, suggesting growth instability at advanced CDG stages. - Highlights: • Exploring growth and film-substrate decoupling in carbon diffusion grown graphene • Nanomechanical mapping of few layer graphene and graphene–substrate interfaces • Quantitative stiffness mapping of

  10. Surface phonons of NiO(001) ultrathin films grown pseudomorphically on Ag(001)

    OpenAIRE

    Kostov, K. L.; Polzin, S.; Schumann, F. O.; Widdra, W.

    2015-01-01

    For a ultrathin NiO(001) film of 4 monolayers (ML) thickness grown on Ag(001), the vibrational properties have been determined by high-resolution electron energy loss spectroscopy (HREELS). For the well-ordered pseudomorphically grown film, nine phonon modes have been identified and their dispersions have been revealed along the Gamma-X high-symmetry direction. The comparison with phonon data for a 25 ML thick NiO(001) film shows that the NiO (001) phonon properties are already fully develope...

  11. Electrical properties of ZnO thin films grown by MOCVD

    International Nuclear Information System (INIS)

    We report on the electrical characterization of ZnO films grown by MOCVD on glass and sapphire substrates. After correcting our temperature variable Hall measurements by applying the standard two-layer model, which takes into account an interfacial layer, scattering mechanisms in the ZnO films were studied as well as donor activation energies determined. ZnO films grown at different oxygen partial pressures indicated the importance of growth conditions on the defect structure by means of their conductivities and conductivity activation energies

  12. Optical characterization of a-Si:H thin films grown by Hg-Photo-CVD

    International Nuclear Information System (INIS)

    Mercury-Sensitized Photo-Assisted Chemical Vapor Deposition (Hg-Photo-CVD) technique opens new possibilities for reducing thin film growth temperature and producing novel semiconductor materials suitable for the future generation of high efficiency thin film solar cells onto low cost flexible plastic substrates. This paper provides some experimental data resulting from the optical characterization of hydrogenated amorphous silicon thin films grown by this deposition technique. Experiments have been performed on both as-deposited layers and thermal annealed ones. (author)

  13. As-grown magnesium diboride superconducting thin films deposited by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Grassano, G.; Ramadan, W.; Ferrando, V.; Bellingeri, E.; Marre, D.; Ferdeghini, C.; Grasso, G.; Putti, M.; Chincarini, A. [INFM, Dipartimento di Fisica, Genoa (Italy); Manfrinetti, P.; Palenzona, A. [INFM, Dipartimento di Chimica e Chimica Industriale, Genoa (Italy)

    2001-09-01

    As-grown superconducting MgB{sub 2} thin films were deposited by pulsed laser deposition on magnesium oxide and sapphire substrates. Starting from a non-stoichiometric, Mg and B mixed-powder target, we were able to grow the superconducting phase during the film deposition, without any further annealing process. So far, samples grown in the temperature range of 400-450 deg. C, and at an argon buffer pressure of the order of 10{sup -2} mbar turned out to be superconducting with an onset temperature of the resistive transition at about 25 K. Even if the deposition process still needs to be fully optimized, we have demonstrated that this method allows us to achieve in situ deposition of as-grown superconducting thin films. This procedure could therefore be promising for the deposition of high-quality epitaxial MgB{sub 2} thin films. (author)

  14. Piezoresistive Sensors Based on Carbon Nanotube Films

    Institute of Scientific and Technical Information of China (English)

    L(U) Jian-wei; WANG Wan-lu; LIAO Ke-jun; WANG Yong-tian; LIU CHang-lin; Zeng Qing-gao

    2005-01-01

    Piezoresistive effect of carbon nanotube films was investigated by a three-point bending test.Carbon nanotubes were synthesized by hot filament chemical vapor deposition.The experimental results showed that the carbon nanotubes have a striking piezoresistive effect.The relative resistance was changed from 0 to 10.5×10-2 and 3.25×10-2 for doped and undoped films respectively at room temperature when the microstrain under stress from 0 to 500. The gauge factors for doped and undoped carbon nanotube films under 500 microstrain were about 220 and 67 at room temperature, respectively, exceeding that of polycrystalline silicon (30) at 35℃.The origin of the resistance changes in the films may be attributed to a strain-induced change in the band gap for the doped tubes and the defects for the undoped tubes.

  15. Preparation of composite electroheat carbon film

    Institute of Scientific and Technical Information of China (English)

    XIA Jin-tong; TU Chuan-jun; LI Yan; HU Li-min; DENG Jiu-hua

    2005-01-01

    A kind of conductive and heating unit, which can reach a high surface electroheat temperature at a low voltage, was developed in view of the traditional electroheat coating which has a low surface electroheat temperature and an insufficient heat resistance of its binder. The coating molded electroheat carbon film(CMECF) was prepared by carbonizing the coating which was prepared by adding modified resin into flake graphite and carbon fiber, coating molded onto the surface of the heat resisting matrix after dried, while the hot pressing molded electroheat thick carbon film(HPMETCF) was prepared by carbonizing the bodies whose powders were hot pressing molded directly.The surface and inner microstructure of the carbon film was characterized and analyzed by SEM and DSC/TG, while electroheat property was tested by voltage-current volume resistivity tester and electrical parameter tester. The results show that, close-packed carbon network configuration is formed within the composite electroheat carbon film film after anti-oxidizable treatment reaches a higher surface electroheat temperature than that of the existing electroheat coatings at a low voltage, and has excellent electroheat property, high thermal efficiency as well as stable physicochemical property. It is found that, at room temperature(19± 2 ℃) and 22 V for 5 min, the surface electroheat temperature of the self-produced CMECF (mfiller/mresin = 1. 8/1) reaches 112 ℃ while HPMETCF (mfiller/mresin = 3. 6/1) reaches 265 ℃.

  16. Origin of graphitic filaments on improving the electron field emission properties of negative bias-enhanced grown ultrananocrystalline diamond films in CH4/Ar plasma

    International Nuclear Information System (INIS)

    Microstructural evolution of bias-enhanced grown (BEG) ultrananocrystalline diamond (UNCD) films has been investigated using microwave plasma enhanced chemical vapor deposition in gas mixtures of CH4 and Ar under different negative bias voltages ranging from −50 to −200 V. Scanning electron microscopy and Raman spectroscopy were used to characterize the morphology, growth rate, and chemical bonding of the synthesized films. Transmission electron microscopic investigation reveals that the application of bias voltage induced the formation of the nanographitic filaments in the grain boundaries of the films, in addition to the reduction of the size of diamond grains to ultra-nanosized granular structured grains. For BEG-UNCD films under −200 V, the electron field emission (EFE) process can be turned on at a field as small as 4.08 V/μm, attaining a EFE current density as large as 3.19 mA/cm2 at an applied field of 8.64 V/μm. But the films grown without bias (0 V) have mostly amorphous carbon phases in the grain boundaries, possessing poorer EFE than those of the films grown using bias. Consequently, the induction of nanographitic filaments in grain boundaries of UNCD films grown in CH4/Ar plasma due to large applied bias voltage of −200 V is the prime factor, which possibly forms interconnected paths for facilitating the transport of electrons that markedly enhance the EFE properties.

  17. Photoresponse in thin films of WO{sub 3} grown by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Roy Moulik, Samik [Unit for Nanoscience, Department of Condensed Matter Physics and Material Sciences, S. N. Bose National Centre for Basic Sciences, Kolkata (India); ICON Analytical Equipment Pvt. Ltd., Kolkata (India); Samanta, Sudeshna; Ghosh, Barnali, E-mail: barnali@bose.res.in [Unit for Nanoscience, Department of Condensed Matter Physics and Material Sciences, S. N. Bose National Centre for Basic Sciences, Kolkata (India)

    2014-06-09

    We report, the photoresponse behaviour of Tungsten trioxide (WO{sub 3}) films of different surface morphology, grown by using pulsed laser deposition (PLD). The Growth parameters for PLD were changed for two substrates SiO{sub 2}/Si (SO) and SrTiO{sub 3} (STO), such a way which, result nanocrystalline film on SO and needle like structured film on STO. The photoresponse is greatly modified in these two films because of two different surface morphologies. The nanocrystalline film (film on SO) shows distinct photocurrent (PC) ON/OFF states when light was turned on/off, the enhancement of PC is ∼27%. Whereas, the film with needle like structure (film on STO) exhibits significantly enhanced persistent photocurrent even in light off condition, in this case, the enhancement of PC ∼ 50% at room temperature at lowest wavelength (λ = 360 nm) at a nominal bias voltage of 0.1 V.

  18. Silicon nanocrystals embedded in oxide films grown by magnetron sputtering

    Directory of Open Access Journals (Sweden)

    Caroline Bonafos

    2016-05-01

    Full Text Available This paper presents a comparison of the results that we obtained and reported over the last few years on the structural, optical and light emitting properties of Si-SiO2 and Si-Al2O3 films that were fabricated using a specific configuration of RF magnetron sputtering. In these films the Si volume fraction, x, varies along the film (which is typically 14 cm long from a value of ~0.1 at one end to ~0.9 at the other end. For the films with x > 0.3, the formation of amorphous Si clusters was observed in as-deposited Si-SiO2 and Si-Al2O3 films. Si nanocrystals (Si-ncs were generated by high-temperature annealing of the films in nitrogen atmosphere. We found that two processes can contribute to the Si-ncs formation: (i the crystallization of the existing amorphous Si inclusions in the as-deposited films, and (ii the thermally stimulated phase separation. Process (i can be responsible for the independence of Si-ncs mean sizes on x in annealed films with x > 0.5. At the same time, difference in the structural and the light emitting properties of the two types of films was observed. For the samples of the same x, the Si-ncs embedded in the Al2O3 host were found to be larger than the Si-ncs in the SiO2 host. This phenomenon can be explained by the lower temperature required for phase separation in Si-Al2O3 or by the lower temperature of the crystallization of Si-ncs in alumina. The latter suggestion is supported by Raman scattering and electron paramagnetic resonance spectra. In contrast with the Si-SiO2, the Si-ncs embedded in Si-Al2O3 films were found to be under tensile stress. This effect was explained by the strains at the interfaces between the film and silica substrate as well as between the Si inclusions and the Al2O3 host. It was also shown that exciton recombination in Si-ncs is the dominant radiative channel in Si-SiO2 films, while the emission from the oxide defects dominates in Si-Al2O3 films. This can be due to the high number of non

  19. Structure and photoluminescence of films composed of carbon nanoflakes

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Yi, E-mail: wangyi@cqut.edu.cn [College of Mechanical Engineering, Chongqing University of Technology, 69 Hongguang Rd, Lijiatuo, Banan District, Chongqing 400054, P R China (China); Li, Lin [College of Chemistry, Chongqing Normal University, Chongqing 401331, P R China (China); Cheng, Qijin [School of Energy Research, Xiamen University, Xiamen 361005, P R China (China); He, Chunlin [Liaoning Provincial Key Laboratory of Advanced Materials, Shenyang University, Shenyang 110044, P R China (China)

    2015-05-15

    Carbon nanoflake films (CNFFs) were directly synthesized by plasma-enhanced hot filament chemical vapor deposition. The results of field emission scanning electron microscope, transmission electron microscope, micro-Raman spectroscope, X-ray photoelectron spectroscope and Fourier transform infrared spectroscope indicate that the CNFFs are composed of bending carbon nanoflakes with the hydrocarbon and hydroxyl functional groups, and the carbon nanoflakes become thin in a long deposition time. The structural change of carbon nanoflakes is related to the formation of structural units and the aggregation of hydrocarbon radicals near the carbon nanoflakes. Moreover, the photoluminescence (PL) properties of CNFFs were studied in a Ramalog system and a PL spectroscope. The PL results indicate that the PL intensity of CNFFs is lowered with the increase of thickness of CNFFs. The lowering of PL intensity for the thick CNFFs originates from the effect of more dangling bonds in the CNFFs. In addition, we studied the structural difference of carbon nanoflakes grown by different CVD systems and the PL difference of carbon nanoflakes in different measurement systems. The results achieved here are important to control the growth and structure of graphene-based materials and fabricate the optoelectronic devices related to carbon-based materials. - Highlights: • Carbon nanoflake films (CNFFs) were synthesized by PEHFCVD. • The structure of CNFFs is related to the aggregation of carbon hydrocarbon radicals. • The PL intensity of CNFFs is lowered with the thickness increase of CNFFs. • The change of PL intensity of CNFFs is due to the dangling bonds in CNFFs. • The widening of PL bands of CNFFs results from the diversity of carbon nanofalkes.

  20. Structure and photoluminescence of films composed of carbon nanoflakes

    International Nuclear Information System (INIS)

    Carbon nanoflake films (CNFFs) were directly synthesized by plasma-enhanced hot filament chemical vapor deposition. The results of field emission scanning electron microscope, transmission electron microscope, micro-Raman spectroscope, X-ray photoelectron spectroscope and Fourier transform infrared spectroscope indicate that the CNFFs are composed of bending carbon nanoflakes with the hydrocarbon and hydroxyl functional groups, and the carbon nanoflakes become thin in a long deposition time. The structural change of carbon nanoflakes is related to the formation of structural units and the aggregation of hydrocarbon radicals near the carbon nanoflakes. Moreover, the photoluminescence (PL) properties of CNFFs were studied in a Ramalog system and a PL spectroscope. The PL results indicate that the PL intensity of CNFFs is lowered with the increase of thickness of CNFFs. The lowering of PL intensity for the thick CNFFs originates from the effect of more dangling bonds in the CNFFs. In addition, we studied the structural difference of carbon nanoflakes grown by different CVD systems and the PL difference of carbon nanoflakes in different measurement systems. The results achieved here are important to control the growth and structure of graphene-based materials and fabricate the optoelectronic devices related to carbon-based materials. - Highlights: • Carbon nanoflake films (CNFFs) were synthesized by PEHFCVD. • The structure of CNFFs is related to the aggregation of carbon hydrocarbon radicals. • The PL intensity of CNFFs is lowered with the thickness increase of CNFFs. • The change of PL intensity of CNFFs is due to the dangling bonds in CNFFs. • The widening of PL bands of CNFFs results from the diversity of carbon nanofalkes

  1. Surface phonons of NiO(001) ultrathin films grown pseudomorphically on Ag(001)

    Science.gov (United States)

    Kostov, K. L.; Polzin, S.; Schumann, F. O.; Widdra, W.

    2016-01-01

    For an ultrathin NiO(001) film of 4 monolayer (ML) thickness grown on Ag(001), the vibrational properties have been determined by high-resolution electron energy loss spectroscopy (HREELS). For the well-ordered pseudomorphically grown film, nine phonon modes have been identified and their dispersions have been revealed along the ΓbarΧbar high-symmetry direction. The comparison with phonon data for a 25 ML thick NiO(001) film shows that the NiO(001) phonon properties are already fully developed at 4 ML. Significant differences are found for the surface-localized phonon S6 which has an increased dispersion for the ultrathin film. The dipole-active Fuchs-Kliewer phonon-polariton exhibits a narrower lineshape than the mode found for a single-crystal surface, which might hint to a reduced antiferromagnetic coupling in the ultrathin film.

  2. Optical properties of InN films grown by pressurized-reactor metalorganic vapor phase epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Yuantao, E-mail: ronaldo_zyt@hotmail.com [Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan); State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012 (China); Kimura, Takeshi; Prasertusk, Kiattiwut; Iwabuchi, Takuya; Kumar, Suresh; Liu, Yuhuai; Katayama, Ryuji; Matsuoka, Takashi [Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan)

    2013-06-01

    InN thin films have been grown using a pressurized-reactor metalorganic vapor phase epitaxy system at 500–700 °C under the pressure of 2.1 × 10{sup 5} Pa. Photoluminescence (PL), optical reflectance and transmission measurements were performed at room temperature. We found that optical properties of these as-grown films strongly depend on the growth temperature. By analyzing the reflectance spectra, it is found that the calculated carrier concentrations of the films increased with decreasing growth temperature. Room-temperature photoluminescence spectra show that the films grown at temperatures higher than 575 °C have strong emission peaks at 0.68–0.75 eV, while those grown at temperatures lower than and equal to 575 °C have negligible emission. The quenching of the emission is attributed to the existences of cubic InN and a high-density of nonradiative recombination centers in the films grown at low growth temperature region. Especially for the case of high temperature growth, the growth temperature dependence of the absorption-edge energy shows a similar tendency with that of the PL peak energy, both blue-shifted with decreasing the growth temperature possibly due to the well-known Burstein–Moss effects. From these results, an optimum growth temperature of 675 °C in the pressurized growth could be obtained. - Highlights: • InN films were grown by metalorganic vapor phase epitaxy under 2.1 × 10{sup 5} Pa. • Photoluminescence, optical reflectance and transmission were measured. • We found that optical properties of films strongly depend on growth temperature. • Optimum growth temperature of 675 °C in the pressurized growth was obtained.

  3. Grain size, texture, and crystallinity in lanthanum monosulfide thin films grown by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Fairchild, S., E-mail: steven.fairchild@wpafb.af.mil [Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright-Patterson Air Force Base, Ohio 45433 (United States); Cahay, M. [School of Electronics and Computing Systems, University of Cincinnati, Cincinnati, Ohio 45221 (United States); Murray, P.T. [Research Institute, University of Dayton, Dayton, OH 45469-0170 (United States); Grazulis, L. [Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright-Patterson Air Force Base, Ohio 45433 (United States); Wu, X.; Poitras, D.; Lockwood, D.J. [Institute for Microstructural Sciences, National Research Council, Ottawa, Ontario, Canada K1A OR6 (Canada)

    2012-12-01

    We report a detailed investigation of the growth of lanthanum monosulfide (LaS) thin films by pulsed laser deposition on (001) magnesium oxide (MgO) substrates in a background of H{sub 2}S for the purpose of optimizing their crystallinity, texture, and grain size. A variety of films were grown while varying the laser repetition rate, the temperature of the substrate, and the partial pressure of H{sub 2}S. The thin films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), Raman spectroscopy, and high resolution transmission electron microscopy. Films grown at 500 Degree-Sign C with a H{sub 2}S background pressure of 3.4 Multiplication-Sign 10{sup -4} Pa and a laser repetition rate of 8 Hz produced the LaS film with the largest grains whose size averaged 293 nm. The XRD pattern of these films revealed that their orientation was predominantly (200). AFM images of the surface of these films showed large plate-like grains. This contrasts with the fine grain structure observed in LaS films grown at a lower substrate temperature and lower H{sub 2}S pressure. - Highlights: Black-Right-Pointing-Pointer LaS thin films were grown by pulsed laser deposition on MgO substrates in H{sub 2}S. Black-Right-Pointing-Pointer Deposition parameters were substrate temperature, H{sub 2}S pressure and repetition rate. Black-Right-Pointing-Pointer Film crystallinity, texture, and grain size were investigated. Black-Right-Pointing-Pointer The growth conditions for optimal texture and grain size are reported.

  4. Epitaxial thin films grown by pulsed laser deposition

    OpenAIRE

    Blank, D. H. A.

    2005-01-01

    In this paper, we present the pulsed laser deposition (PLD) technique to control the growth of metal oxide materials at atomic level using high-pressure reflective high-energy electron diffraction and ellipsometry. These developments have helped to make PLD a grown-up technique to fabricate complex materials and structures

  5. Phase transition of bismuth telluride thin films grown by MBE

    DEFF Research Database (Denmark)

    Fülöp, Attila; Song, Yuxin; Charpentier, Sophie;

    2014-01-01

    A previously unreported phase transition between Bi2Te3 and Bi4Te3 in bismuth telluride grown by molecular beam epitaxy is recorded via XRD, AFM, and SIMS observations. This transition is found to be related to the Te/Bi beam equivalent pressure (BEP) ratio. BEP ratios below 17 favor the formatio...

  6. Fabrication and electrochemical properties of free-standing single-walled carbon nanotube film electrodes

    Institute of Scientific and Technical Information of China (English)

    Niu Zhi-Qiang; Ma Wen-Jun; Dong Hai-Bo; Li Jin-Zhu; Zhou Wei-Ya

    2011-01-01

    An easily manipulative approach was presented to fabricate electrodes using free-standing single-walled carbon nanotube (SWCNT) films grown directly by chemical vapor deposition. Electrochemical properties of the electrodes were investigated. In comparison with the post-deposited SWCNT papers, the directly grown SWCNT film electrodes manifested enhanced electrochemical properties and sensitivity of sensors as well as excellent electrocatalytic activities. A transition from macroelectrode to nanoelectrode behaviours was observed with the increase of scan rate. The heat treatment of the SWCNT film electrodes increased the current signals of electrochemical analyser and background current, because the heat-treatment of the SWCNTs in air could create more oxide defects on the walls of the SWCNTs and make the surfaces of SWCNTs more hydrophilic. The excellent electrochemical properties of the directly grown and heat-treated free-standing SWCNT film electrodes show the potentials in biological and electrocatalytic applications.

  7. High mobility InN films grown by metal-organic vapor phase epitaxy

    International Nuclear Information System (INIS)

    We have grown single crystalline InN films on sapphire substrate using metal-organic vapor phase epitaxy (MOVPE). Electron mobility exceeding 1100 cm2/V sec was obtained for the as-grown films, with a donor concentration of 1-2 x 1019 cm-3. The observed mobility was higher than other reports using the MOVPE technique, and was comparable to the best results with similar carrier concentration using molecular beam epitaxy. Photoluminescence measurement showed a broad emission near 1.6 μm, indicating a likely narrow bandgap similar to many recent reports on InN. X-ray photoelectron spectroscopic analysis revealed little oxygen in the InN films grown. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  8. Vacuum ultraviolet photoconductive detector based on pulse laser deposition-grown neodymium fluoride thin film

    International Nuclear Information System (INIS)

    A filterless vacuum ultraviolet photoconductive detector based on neodymium fluoride thin films was demonstrated. The thin films were deposited on quartz glass substrates by the pulsed laser deposition. Crystallinity and photoconductivity were improved by controlling the substrate temperature. The sample grown at 670 K showed the highest photoconductivity. It responded to wavelengths shorter than 180 nm without any filters. - Highlights: ► NdF3 thin films show photoconductivity under vacuum ultraviolet illumination. ► The substrate temperature affected the crystallinity of NdF3 thin films. ► The dark current was 0.63 pA at an applied bias voltage of 300 V

  9. Raman analyses of residual stress in diamond thin films grown on Ti6Al4V alloy

    Directory of Open Access Journals (Sweden)

    Azevedo Adriana F.

    2003-01-01

    Full Text Available The stress evolution in diamond films grown on Ti6Al4V was investigated in order to develop a comprehensive view of the residual stress formation. Residual stress is composed of intrinsic stress induced during diamond film growth and extrinsic stress caused by the different thermal expansion coefficients between the film and substrate. In the coalescence stage it has been observed that the residual stress is dominated by the microstructure, whereas on continuous films, the thermal stress is more important. In this work diamond thin films with small grain size and good size and good quality were obtained in a surface wave-guide microwave discharge, the Surfatron system, with a negative bias voltage applied between the plasma shell and substrate. For above of -100V applied bias, the ratio of carbon sp³/sp² bond may increase and the nucleation rate increase arising the high value at the -250V applied bias. Stress measurements and sp³ content in the film were studied by Raman scattering spectroscopy. The total residual stress is compressive and varied from -1.52 to -1.48 GPa between 0 and -200 V applied bias, respectively, and above the -200 V, the compressive residual stress increased drastically to -1.80 GPa. The diamond nucleation density was evaluated by top view SEM images.

  10. Atomic force microscopy study of thermal stability of silver selenide thin films grown on silicon

    International Nuclear Information System (INIS)

    Silver selenide thin films were grown on silicon substrates by the solid-state reaction of sequentially deposited Se and Ag films of suitable thickness. Transmission electron microscopy and particle-induced X-ray emission studies of the as-deposited films showed the formation of single phase polycrystalline silver selenide from the reaction of Ag and Se films. Atomic force microscopy images of the as-deposited and films annealed at different temperatures in argon showed the film morphology to evolve into an agglomerated state with annealing temperature. The results indicate that when annealed above 473 K, silver selenide films on silicon become unstable and agglomerate through holes generated at grain boundaries

  11. Coaxial carbon plasma gun deposition of amorphous carbon films

    International Nuclear Information System (INIS)

    A unique plasma gun employing coaxial carbon electrodes was used in an attempt to deposit thin films of amorphous diamond-like carbon. A number of different structural, compositional, and electrical characterization techniques were used to characterize these films. These included scanning electron microscopy, scanning transmission electron microscopy, X ray diffraction and absorption, spectrographic analysis, energy dispersive spectroscopy, and selected area electron diffraction. Optical absorption and electrical resistivity measurements were also performed. The films were determined to be primarily amorphous, with poor adhesion to fused silica substrates. Many inclusions of particulates were found to be present as well. Analysis of these particulates revealed the presence of trace impurities, such as Fe and Cu, which were also found in the graphite electrode material. The electrodes were the source of these impurities. No evidence of diamond-like crystallite structure was found in any of the film samples. Details of the apparatus, experimental procedure, and film characteristics are presented

  12. Coaxial carbon plasma gun deposition of amorphous carbon films

    Science.gov (United States)

    Sater, D. M.; Gulino, D. A.; Rutledge, S. K.

    1984-01-01

    A unique plasma gun employing coaxial carbon electrodes was used in an attempt to deposit thin films of amorphous diamond-like carbon. A number of different structural, compositional, and electrical characterization techniques were used to characterize these films. These included scanning electron microscopy, scanning transmission electron microscopy, X ray diffraction and absorption, spectrographic analysis, energy dispersive spectroscopy, and selected area electron diffraction. Optical absorption and electrical resistivity measurements were also performed. The films were determined to be primarily amorphous, with poor adhesion to fused silica substrates. Many inclusions of particulates were found to be present as well. Analysis of these particulates revealed the presence of trace impurities, such as Fe and Cu, which were also found in the graphite electrode material. The electrodes were the source of these impurities. No evidence of diamond-like crystallite structure was found in any of the film samples. Details of the apparatus, experimental procedure, and film characteristics are presented.

  13. Property modulation of NiO films grown by radio frequency magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Chen, T.F.; Wang, A.J.; Shang, B.Y. [Department of Physics, Beijing Normal University, Beijing 100875 (China); Wu, Z.L.; Li, Y.L. [Analytical and Testing Center, Beijing Normal University, Beijing 100875 (China); Wang, Y.S., E-mail: yswang@bnu.edu.cn [Department of Physics, Beijing Normal University, Beijing 100875 (China)

    2015-09-15

    Highlights: • Controllable and preferential growth of NiO films were performed successfully on Si substrates. • Oxygen partial pressure lower than 6% is crucial for transformation of the preferential growth. • The film deposition rate is very sensitive to the low oxygen partial pressure. • NiO lattice expands quadratically with the increasing of oxygen partial pressures. • The films contain high concentration of Ni vacancies and show a good rectifying behavior with p-Si. - Abstract: NiO films were grown on Si substrates by radio frequency magnetron sputtering. The films were analyzed by an X-ray diffractometer, scanning electron microscope, X-ray photoelectron spectroscopy and SCS-4200 semiconductor characterization system. Evolution of the growth mode, lattice strain, morphology, chemistry states and electrical properties were investigated systematically. The film deposition rates and properties are very sensitive to the oxygen partial pressure lower than 10%. It is crucial to decrease the oxygen partial pressure to 2% for (1 1 1) film growth and the films would transform from (1 1 1) to (1 0 0) as the oxygen partial pressure increases from 2% to 6%. The film lattice expands quadratically with the increase of oxygen partial pressure. Nickel vacancy concentration in (1 1 1) films is much higher than that in (1 0 0) films. All (1 0 0) films show good rectifying behavior with p-Si. The film growth modes and properties could be modulated flexibly by controlling the oxygen partial pressures.

  14. Property modulation of NiO films grown by radio frequency magnetron sputtering

    International Nuclear Information System (INIS)

    Highlights: • Controllable and preferential growth of NiO films were performed successfully on Si substrates. • Oxygen partial pressure lower than 6% is crucial for transformation of the preferential growth. • The film deposition rate is very sensitive to the low oxygen partial pressure. • NiO lattice expands quadratically with the increasing of oxygen partial pressures. • The films contain high concentration of Ni vacancies and show a good rectifying behavior with p-Si. - Abstract: NiO films were grown on Si substrates by radio frequency magnetron sputtering. The films were analyzed by an X-ray diffractometer, scanning electron microscope, X-ray photoelectron spectroscopy and SCS-4200 semiconductor characterization system. Evolution of the growth mode, lattice strain, morphology, chemistry states and electrical properties were investigated systematically. The film deposition rates and properties are very sensitive to the oxygen partial pressure lower than 10%. It is crucial to decrease the oxygen partial pressure to 2% for (1 1 1) film growth and the films would transform from (1 1 1) to (1 0 0) as the oxygen partial pressure increases from 2% to 6%. The film lattice expands quadratically with the increase of oxygen partial pressure. Nickel vacancy concentration in (1 1 1) films is much higher than that in (1 0 0) films. All (1 0 0) films show good rectifying behavior with p-Si. The film growth modes and properties could be modulated flexibly by controlling the oxygen partial pressures

  15. Perovskite thin films grown by direct liquid injection MOCVD

    International Nuclear Information System (INIS)

    The continuous scaling down of devices dimensions, in silicon technology, imposes to replace silicon dioxide. Among the potential candidates for new capacitors, some perovskite structure materials (such as titanate or zirconate) show interesting characteristics. The first way to develop perovskite films is to use a mixture of two β-diketonates by varying the solution's cationic ratio. However, our previous results on SrZrO3 showed that a wide parametric study had to be carried on. Another way is to design novel heterometallic precursors that contain both cations on the same molecule. The ligands could be chosen so that peculiar evaporation and decomposition temperatures could be obtained. Thus, perovskite films (SrZrO3) were deposited on plane Si(1 0 0) substrates by direct liquid injection MOCVD from two original heterometallic precursors Sr2Zr2(OnPr)8(thd)4(nPrOH)2 and Sr2Zr2(thd)4(OiPr)8. The oxide films were deposited at substrate temperature ranging from 550 to 900 deg. C. At the lowest temperatures (550 and 600 deg. C) the as-deposited films were amorphous. After a postannealing at 700 deg. C for 1 h under N2/O2, the films deposited at 550 deg. C were crystallized in the SrZrO3 orthorhombic phase. Crystallographic and chemical structures were controlled applying grazing X-ray diffraction and infrared spectroscopy measurements. Results are discussed with respect to experimental synthesis conditions

  16. Carbon films produced from ionic liquid carbon precursors

    Science.gov (United States)

    Dai, Sheng; Luo, Huimin; Lee, Je Seung

    2013-11-05

    The invention is directed to a method for producing a film of porous carbon, the method comprising carbonizing a film of an ionic liquid, wherein the ionic liquid has the general formula (X.sup.+a).sub.x(Y.sup.-b).sub.y, wherein the variables a and b are, independently, non-zero integers, and the subscript variables x and y are, independently, non-zero integers, such that ax=by, and at least one of X.sup.+ and Y.sup.- possesses at least one carbon-nitrogen unsaturated bond. The invention is also directed to a composition comprising a porous carbon film possessing a nitrogen content of at least 10 atom %.

  17. The Effect of Deposition Rate on Morphology and Structural Properties of Carbon-Nickel Composite Films

    OpenAIRE

    Smohammad Elahi; Vali Dalouji; Shahoo Valedbagi

    2013-01-01

    Carbon-nickel films were grown by radio frequency magnetron cosputtering on glass substrates. The films were deposited under different deposition times, from 50 to 600 sec, at room temperature. We noticed that up to 180 sec the sputtering occurs in more metal content mode and in greater than 180 sec it occurs in more nonmetal content mode. It is shown that the structural and morphological properties of carbon-nickel films were strongly influenced by this behavior.

  18. Pyroelectric and piezoelectric responses of thin AlN films epitaxy-grown on a SiC/Si substrate

    Science.gov (United States)

    Kukushkin, S. A.; Osipov, A. V.; Sergeeva, O. N.; Kiselev, D. A.; Bogomolov, A. A.; Solnyshkin, A. V.; Kaptelov, E. Yu.; Senkevich, S. V.; Pronin, I. P.

    2016-05-01

    This paper presents the results of pyroelectric and piezoelectric studies of AlN films formed by chloride-hydride epitaxy (CHE) and molecular beam epitaxy (MBE) on epitaxial SiC nanolayers grown on Si by the atom substitution method. The surface topography and piezoelectric and pyroelecrtric responses of AlN films have been analyzed. The results of the study have shown that the vertical component of the piezoresponse in CHE-grown AlN films is more homogeneous over the film area than that in MBE-grown AlN films. However, the signal from the MBE-synthesized AlN films proved to be stronger. The inversion of the polar axis (polarization vector) on passage from MBE-grown AlN films to CHE-grown AlN films has been found experimentally. It has been shown that the polar axis in MBE-grown films is directed from the free surface of the film toward the Si substrate while, in CHE-grown films, the polarization vector is directed toward the free surface.

  19. Grown of CdTe:Eu films by pulsed laser deposition

    OpenAIRE

    M. Zapata-Torres; M. González-Alcudia; Meléndez-Lira, M.; O. Calzadilla Amaya

    2006-01-01

    CdTe:Eu films were grown by the pulsed laser deposition method on glass substrates. The targets were prepared with three different concentrations of Cd, Te and Eu employing CdTe and EuTe powders, homogenized by ball milling. X-ray diffraction measurements showed that the samples grown with a mixture of phases related with the structure of CdTe and EuTe, with a little increase of the lattice parameter. Scanning Electron micrographs revealed that CdTe:Eu films presented a texture similar to sol...

  20. Nucleant layer effect on nanocolumnar ZnO films grown by electrodeposition

    OpenAIRE

    Reyes Tolosa, María Dolores; Damonte, Laura Cristina; Brine, Hicham; Bolink, Henk J.; Hernández Fenollosa, María De Los Ángeles

    2013-01-01

    Different ZnO nanostructured films were electrochemically grown, using an aqueous solution based on ZnCl2, on three types of transparent conductive oxides grow on commercial ITO (In2O3:Sn)-covered glass substrates: (1) ZnO prepared by spin coating, (2) ZnO prepared by direct current magnetron sputtering, and (3) commercial ITO-covered glass substrates. Although thin, these primary oxide layers play an important role on the properties of the nanostructured films grown on top of ...

  1. Structure of Cr film epitaxially grown on MgO(0 0 1)

    International Nuclear Information System (INIS)

    Cr(0 0 1) films of thickness ∼100 nm were epitaxially grown on MgO(0 0 1) using molecular beam epitaxy at both room temperature and 550 oC. The structure of the films was characterized using high-resolution transmission electron microscopy, electron diffraction and electron energy-loss spectroscopy. Room temperature growth leads to highly oriented columnar structured grains in the film, while growth at 550 oC yields high-quality single-crystal Cr film, possessing a 45o rotational epitaxial relationship between the film and the substrate. For the single-crystal film, the interface exhibited coherent regions separated by equally spaced misfit dislocations. When imaged from the MgO[1 0 0]//Cr[1 1 0] direction, the dislocation spacing is 5.38 and 4.64 nm for the films grown at room temperature and 550 oC, respectively, which is slightly smaller than the expected value of 6.25 nm calculated from the differences in lattice spacing based on known lattice constants. The results presented here indicate that the lattice mismatch between the film and the substrate is accommodated mainly by interface misfit dislocations above some critical thickness. The electronic structure of the interface between the film and the substrate is also explored using electron energy-loss spectroscopy.

  2. Nanocrystalline magnetite thin films grown by dual ion-beam sputtering

    International Nuclear Information System (INIS)

    Highlights: • We have grown tensile and compressive strained nanocrystalline magnetite thin films by dual ion beam sputtering. • The magnetic and thermoelectric properties can be controlled by the deposition conditions. • The magnetic anisotropy depends on the crystalline grain size. • The thermoelectric properties depend on the type of strain induced in the films. • In plane uniaxial magnetic anisotropy develops in magnetite thin films with grain sizes ⩽20 nm. - Abstract: We have explored the influence of an ion-assisted beam in the thermoelectric and magnetic properties of nanocrystalline magnetite thin films grown by ion-beam sputtering. The microstructure has been investigated by XRD. Tensile and compressive strained thin films have been obtained as a function of the parameters of the ion-assisted beam. The evolution of the in-plane magnetic anisotropy was attributed to crystalline grain size. In some films, magneto-optical Kerr effect measurements reveal the existence of uniaxial magnetic anisotropy induced by the deposition process related with a small grain size (⩽20 nm). Isotropic magnetic properties have observed in nanocrystalline magnetite thin film having larger grain sizes. The largest power factor of all the films prepared (0.47 μW/K2 cm), obtained from a Seebeck coefficient of −80 μV/K and an electrical resistivity of 13 mΩ cm, is obtained in a nanocrystalline magnetite thin film with an expanded out-of-plane lattice and with a grain size ≈30 nm

  3. The depth-profiled carrier concentration and scattering mechanism in undoped GaN film grown on sapphire

    OpenAIRE

    Fung, S; Beling, CD; Ling, CC; Xu, SJ; Huang, Y.; Chen, XD; Wei, ZF; Zhi, CY

    2004-01-01

    The carrier concentration and scattering mechanism in undoped GaN film grown on sapphire were investigated. The film was grown on sapphire using metal organic chemical vapor deposition (MOCVD). Confocal micro-Raman spectroscopic measurements and temperature-dependant Hall (TDH) measurements were performed for the study of the depth distribution of the carrier density across the GaN film. The existence of a nonuniform spatial distribution of free carriers in the film with a highly conductive l...

  4. Monocrystalline zinc oxide films grown by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Wachnicki, L., E-mail: lwachn@ifpan.edu.p [Polish Academy of Sciences, Institute of Physics, al. Lotnikow 32/46, Warszawa 02-668 (Poland); Krajewski, T.; Luka, G. [Polish Academy of Sciences, Institute of Physics, al. Lotnikow 32/46, Warszawa 02-668 (Poland); Witkowski, B. [Cardinal Stefan Wyszynski University, College of Science, Department of Mathematics and Natural Sciences, Warszawa (Poland); Kowalski, B.; Kopalko, K.; Domagala, J.Z. [Polish Academy of Sciences, Institute of Physics, al. Lotnikow 32/46, Warszawa 02-668 (Poland); Guziewicz, M. [Institute of Electron Technology (ITE), al. Lotnikow 32/46, Warsaw 02-668 (Poland); Godlewski, M. [Polish Academy of Sciences, Institute of Physics, al. Lotnikow 32/46, Warszawa 02-668 (Poland); Cardinal Stefan Wyszynski University, College of Science, Department of Mathematics and Natural Sciences, Warszawa (Poland); Guziewicz, E. [Polish Academy of Sciences, Institute of Physics, al. Lotnikow 32/46, Warszawa 02-668 (Poland)

    2010-06-01

    In the present work we report on the monocrystalline growth of (00.1) ZnO films on GaN template by the Atomic Layer Deposition technique. The ZnO films were obtained at temperature of 300 {sup o}C using dietylzinc (DEZn) as a zinc precursor and deionized water as an oxygen precursor. High resolution X-ray diffraction analysis proves that ZnO layers are monocrystalline with rocking curve FWHM of the 00.2 peak equals to 0.07{sup o}. Low temperature photoluminescence shows a sharp and bright excitonic line with FWHM of 13 meV.

  5. Epitaxial Cu(001) films grown on a Cr/Ag/Fe/GaAs(001) buffer system

    International Nuclear Information System (INIS)

    We present a procedure to prepare single-crystalline, high-purity Cu(001) films (templates) suitable as substrates for subsequent epitaxial thin-film growth. The template films were grown in a dedicated molecular-beam epitaxy system on a Cr/Ag/Fe/GaAs(001) buffer layer system. Low-energy electron diffraction and X-ray diffraction were applied to determine the surface orientation and the epitaxial relationship between all layers of the stack. Post-annealing at moderate temperatures enhances the quality of the film as shown by low-energy electron diffraction and atomic force microscopy. X-ray photoemission and Auger electron spectroscopy confirm that no atoms of the buffer layers diffuse into the Cu film during the initial preparation and the post-annealing treatment. The completed Cu(001) template system can be exposed to air and afterwards refurbished by Ar+-ion bombardment and annealing, enabling the transfer between vacuum systems. The procedure provides suitable conductive thin film templates for studies of epitaxial thin films, e.g. on the magnetic and magnetotransport properties of Co and Ni based films and multilayers. - Highlights: • Preparation of epitaxial Cu(001) template films on an insulating substrate • Characterization of template structure, orientation, cleanness, and roughness • Template films can be exposed to air and refurbished in different vacuum system. • Template films are suitable for further thin film growth at up to 570 K

  6. Resonant magnetic X-ray scattering from in situ grown holmium-metal films

    International Nuclear Information System (INIS)

    Resonant magnetic X-ray scattering (RMXS) experiments at the Ho-L3 and M5 thresholds have been performed on thin holmium-metal films grown in situ in ultra-high vacuum on W(110). The experimental set-up for these experiments as well as results for the magnetic structure of these films will be described. The magnetic structure stays bulk-like down to a thickness of 14 monolayers. (authors)

  7. One-step grown multi-walled carbon nanotubes with Ni filling and decoration

    Science.gov (United States)

    Baro, Mahananda; Pal, Arup R.

    2015-06-01

    A single step approach for the synthesis of multi-walled carbon nanotubes filled with Ni nanowires (Ni-MWCNTs) and decorated with Ni nanoparticles has been illustrated. The MWCNTs are grown by a PECVD-sputtering hybrid process at the low temperature of 450 °C having an average diameter of 55   ±   6 nm and length of 1.35   ±   0.08 µm. Thin Ni films of the thickness 10 nm have been used, which act as a catalyst as well as a source material for the filling of MWCNTs with Ni nanowires, whereas sputtering of Ni is the source of decorated Ni particles. This process facilitates the growth of aligned MWCNTs filled with Ni nanowires and also decorated with Ni nanoparticles on the walls. Magnetic properties of the Ni filled and decorated MWCNTs are measured using a vibrating sample magnetometer. Magnetic hysteresis loops of Ni containing MWCNTs show ferromagnetic behavior. These Ni-MWCNTs shows coercivity of 135 Oe, which is significantly greater than that of the bulk Ni at room temperature. The magnetic property measurement reveals that the coercivity of the as grown MWCNTs is dependent on the size and content of Ni. Thus, a novel method has been demonstrated for the synthesis of ferromagnetic Ni-MWCNT which has potential applications in various fields.

  8. Characterisation of molecular thin films grown by organic molecular beam deposition

    CERN Document Server

    Bayliss, S M

    2000-01-01

    This work concerns the growth and characterisation of molecular thin films in an ultra high vacuum regime by organic molecular beam deposition (OMBD). Films of three different molecular materials are grown, namely free base phthalocyanine (H sub 2 Pc), perylene 3,4,9,10-tetracarboxylic dianhydride (PTCDA) and aluminium tris-8-hydroxyquinoline (Alq sub 3). The relationship between the growth parameters such as film thickness, growth rate, and substrate temperature during and after growth, and the structural, optical and morphological properties of the film are investigated. These investigations are carried out using various ex-situ techniques. X-ray diffraction, Raman spectroscopy and electronic absorption spectroscopy are used to probe the bulk film characteristics, whilst Nomarski microscopy and atomic force microscopy are used to study the surface morphology. Three different levels of influence of the growth parameters on the film properties are observed. In the case of H sub 2 Pc, two crystal phases are fo...

  9. Crystalline thin films of transition metal hexacyanochromates grown under Langmuir monolayer

    International Nuclear Information System (INIS)

    Crystalline films of cobalt, nickel and iron hexacyanochromates (analogues of Prussian blue) were grown at air-water interface using a surfactant monolayer as a template. These films were transferred on suitable substrates and characterized by X-ray diffraction (XRD), cyclic voltammetry and magnetization measurements. XRD patterns confirmed the formation of oriented crystals in {100} direction for all these films. Magnetization data on nickel and iron hexacyanochromate films indicated ferromagnetic behaviour below Curie temperatures of 72 and 21 K, respectively. The methodology adopted by us to grow crystalline films is useful in obtaining magnetic thin films of analogues of Prussian blue with interesting magnetic properties with respect to transition temperatures and nature of magnetic ordering

  10. Growth and properties of amorphous silicon films grown using pulsed-flow reactive plasma beam epitaxy

    Science.gov (United States)

    Dalal, Vikram L.; Knox, Ralph; Kandalaft, Nabeeh; Baldwin, Greg

    1991-01-01

    The growth and properties of a-Si:H films grown using a novel deposition technique, reactive plasma beam epitaxy, are discussed. In this technique, a remote H plasma produced in a microwave-ECR reactor is used to grow a-Si:H films at low pressures. The H ions react with SiH4 introduced near the substrate to produce the film. The flow of SiH4 is pulsed on or off, thereby achieving in-situ annealing of the film during growth by H ions and radicals. The films produced by this technique appear to have good electronic quality, and are more stable than the standard glow discharge films.

  11. Interfacial diffusion in a MOCVD grown barium titanate film[Metal Organic Chemical Vapor Deposition

    Energy Technology Data Exchange (ETDEWEB)

    Datta, A.; Chattopadhyay, S.; Richter, A.G.; Kmetko, J.; Lee, C.B.

    2000-07-01

    A combination of two nondestructive techniques, Grazing Incidence X-ray Reflectivity and High Resolution X-ray Diffraction, is used to study (at around 10{angstrom} resolution) the composition profile across a 500{angstrom} thick film of BaTiO{sub 3} grown epitaxially on (100) MgO by MOCVD. Results form both studies indicate diffusion of Mg to about 250{angstrom} into the film at film-substrate interface, consistent with the diffuse ferroelectric phase transition observed in this film. The lattice parameter a shows a progressive decrease as the authors move into the film from the interface, and an anomalously low value in the Mg-free portion of the film.

  12. Tungsten oxide nanowires grown on amorphous-like tungsten films.

    Science.gov (United States)

    Dellasega, D; Pietralunga, S M; Pezzoli, A; Russo, V; Nasi, L; Conti, C; Vahid, M J; Tagliaferri, A; Passoni, M

    2015-09-11

    Tungsten oxide nanowires have been synthesized by vacuum annealing in the range 500-710 °C from amorphous-like tungsten films, deposited on a Si(100) substrate by pulsed laser deposition (PLD) in the presence of a He background pressure. The oxygen required for the nanowires formation is already adsorbed in the W matrix before annealing, its amount depending on deposition parameters. Nanowire crystalline phase and stoichiometry depend on annealing temperature, ranging from W18O49-Magneli phase to monoclinic WO3. Sufficiently long annealing induces the formation of micrometer-long nanowires, up to 3.6 μm with an aspect ratio up to 90. Oxide nanowire growth appears to be triggered by the crystallization of the underlying amorphous W film, promoting their synthesis at low temperatures. PMID:26292084

  13. Electromagnetic characteristics of carbon nanotube film materials

    Directory of Open Access Journals (Sweden)

    Zhang Wei

    2015-08-01

    Full Text Available Carbon nanotube (CNT possesses remarkable electrical conductivity, which shows great potential for the application as electromagnetic shielding material. This paper aims to characterize the electromagnetic parameters of a high CNT loading film by using waveguide method. The effects of layer number of CNT laminate, CNT alignment and resin impregnation on the electromagnetic characteristics were analyzed. It is shown that CNT film exhibits anisotropic electromagnetic characteristic. Pristine CNT film shows higher real part of complex permittivity, conductivity and shielding effectiveness when the polarized direction of incident wave is perpendicular to the winding direction of CNT film. For the CNT film laminates, complex permittivity increases with increasing layer number, and correspondingly, shielding effectiveness decreases. The five-layer CNT film shows extraordinary shielding performance with shielding effectiveness ranging from 67 dB to 78 dB in X-band. Stretching process induces the alignment of CNTs. When aligned direction of CNTs is parallel to the electric field, CNT film shows negative permittivity and higher conductivity. Moreover, resin impregnation into CNT film leads to the decrease of conductivity and shielding effectiveness. This research will contribute to the structural design for the application of CNT film as electromagnetic shielding materials.

  14. Multiwalled carbon nanotube film for strain sensing

    International Nuclear Information System (INIS)

    We have studied the possibility of using multiwalled carbon nanotube (MWCNT) films as strain sensors. The MWCNT films were prepared by a solution/filtration method and were bonded directly onto specimens by a nonconductive adhesive. For comparison, conventional foil strain gages were also bonded to the structure on the opposite side. The specimens then underwent a uniaxial tensile load-unload cycle to evaluate them as strain sensors. To ensure good electrical contact between carbon nanotube film and the wires, a thin layer of copper was thermally deposited on both ends of the film as electrodes, and the wires were connected to the electrodes by silver ink. Wheatstone bridges were used to convert the resistance changes of the MWCNTs to voltage output. Results indicated that the output voltages were proportional to the strain readings from the stain indicator. The effect of temperature on the resistance was measured and the MWCNT film resistance was found to be independent of temperature over the range 273-363 K. The optimal film dimension for strain sensing was evaluated as well. Dynamic tests suggest that the MWCNTs were able to extract the structural signature. Our results indicate that MWCNT film is potentially useful for structural health monitoring and vibration control applications

  15. DEEP TRAPS SPECTRA IN UNDOPED GAN FILMS GROWN BY HYDRIDE VAPOR PHASE EPITAXY UNDER VARIOUS CONDITIONS

    Directory of Open Access Journals (Sweden)

    A. Y. Polyakov

    2014-01-01

    Full Text Available Decreasing the residual donors density and deep traps spectra densities in undoped GaN films grown by Hydride Vapor Phase Epitaxy (HVPE is very important for promoting the use of such material in high- voltage/high-power rectifiers, radiation detectors. In this study we studied the effects of changing the growth temperature of undoped HVPE GaN films on these properties. The two groups of undoped GaN HVPE samples analyzed in this study were grown at growth temperature being either 850ºC or 950ºC. Measurements by means of Capacitance-Voltage (C-V profiling, deep levels transient spectroscopy, Micro Cathode Luminescence (MCL spectroscopy and imaging and by Electron Beam Induced Current (EBIC showed a much lower density of residual donors (by almost two orders of magnitude, of deep electron traps and hole traps (by about an order of magnitude and considerably (about 1.5 times longer diffusion length of charge carriers in the films grown at 850ºC compared to samples prepared at 950ºC. The data obtained indicate that there is an optimal reduced growth temperature (close to 850ºC resulting in lower concentration of shallow donors and deep traps while still preserving the high crystalline quality of the layer. This is of paramount importance for device applications of HVPE grown undoped GaN films.

  16. Quasi-Freestanding multilayer graphene films on the carbon face of SiC

    Energy Technology Data Exchange (ETDEWEB)

    Siegel, D. A.; Hwang, C. G.; Fedorov, A. V.; Lanzara, A.

    2010-06-30

    The electronic band structure of as-grown and doped graphene grown on the carbon face of SiC is studied by high-resolution angle-resolved photoemission spectroscopy, where we observe both rotations between adjacent layers and AB-stacking. The band structure of quasi-freestanding AB-bilayers is directly compared with bilayer graphene grown on the Si-face of SiC to study the impact of the substrate on the electronic properties of epitaxial graphene. Our results show that the C-face films are nearly freestanding from an electronic point of view, due to the rotations between graphene layers.

  17. Hydrogen dilution effect on microstructure of Si thin film grown by catalyzer enhanced chemical vapor deposition

    International Nuclear Information System (INIS)

    The effect of hydrogen dilution on microstructure of in situ polycrystalline Si (poly-Si) films grown by catalyzer-enhanced chemical vapor deposition (CECVD) has been investigated by using transmission electron microscopy (TEM) and transmission electron diffraction (TED) analysis. It was shown that the increase of the hydrogen dilution ratio resulted in transition of microstructure of Si thin film from amorphous to polycrystalline in CECVD at low substrate temperature (∼80 deg. C). These results indicate that the CECVD technique is a promising candidate to grow high-quality in situ polycrystalline Si films on glass or a flexible substrate for low-temperature poly-Si (LTPS) and flexible displays

  18. Hydrogen dilution effect on microstructure of Si thin film grown by catalyzer enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Han-Ki [School of Advanced Materials and Systems Engineering, Kumoh National Institute of Technology (KIT), 1 Yangho-dong, Gumi, Gyeongbuk, 730-701 (Korea, Republic of)]. E-mail: hkkim@kumoh.ac.kr

    2006-12-15

    The effect of hydrogen dilution on microstructure of in situ polycrystalline Si (poly-Si) films grown by catalyzer-enhanced chemical vapor deposition (CECVD) has been investigated by using transmission electron microscopy (TEM) and transmission electron diffraction (TED) analysis. It was shown that the increase of the hydrogen dilution ratio resulted in transition of microstructure of Si thin film from amorphous to polycrystalline in CECVD at low substrate temperature ({approx}80 deg. C). These results indicate that the CECVD technique is a promising candidate to grow high-quality in situ polycrystalline Si films on glass or a flexible substrate for low-temperature poly-Si (LTPS) and flexible displays.

  19. Effect of source gas chemistry on tribological performance of diamond-like carbon films.

    Energy Technology Data Exchange (ETDEWEB)

    Erdemir, A.; Eryilmaz, O. L.; Fenske, G. R.; Nilufer, I. B.

    1999-08-23

    In this study, we investigated the effects of various source gases (i. e., methane, ethane, ethylene, acetylene and methane + hydrogen) on friction and wear performance of diamond-like carbon (DLC) films. Specifically, we described the anomalous nature and fundamental friction and wear mechanisms of DLC films derived from gas discharge plasmas with very low to very high hydrogen content. The films were deposited on steel substrates by a plasma enhanced chemical vapor deposition process at room temperature and the tribological tests were performed in dry nitrogen. The results of tribological tests revealed a close correlation between the friction and wear coefficients of the DLC films and the source gas chemistry. Specifically, films grown in source gases with higher hydrogen-to-carbon ratios had much lower friction coefficients and wear rates than the films derived from source gases with lower hydrogen-to-carbon ratios. The lowest friction coefficient (0.002) was achieved with a film derived from 25% methane--75% hydrogen while the films derived from acetylene had a coefficient of 0.15. Similar correlations were observed on wear rates. Specifically, the films derived from hydrogen rich plasmas had the least wear while the films derived from pure acetylene suffered the highest wear. We used a combination of scanning and transmission electron microscopy and Raman spectroscopy to characterize the structural chemistry of the resultant DLC films.

  20. Highly coercive L10-FePd thin films grown on MgO single crystal substrates

    International Nuclear Information System (INIS)

    L10-ordered systems are of great interest from both the technological and research point of view since their high magnetocrystalline anisotropy makes them suitable candidates for future high density recording media. FePd and FePt are isostructural alloys that in their ordered phase show very different magnetic behaviour. In this work ultra-thin films of FePd and FePt films have been grown showing very hard magnetic properties. The coercivity of FePd films grown at 7000C reaches values well above 10 kOe much greater than that obtained in FePt films grown in the same conditions.

  1. Properties of phosphorus-doped zinc oxide films grown by pulsed laser deposition

    International Nuclear Information System (INIS)

    Electrical and chemical bonding properties of P-doped ZnO thin films grown by pulsed laser deposition on sapphire substrates were systematically characterized utilizing the Hall effect and x-ray photoelectron spectroscopy (XPS) measurements. Oxygen growth pressure and postannealing processing play a great role in the properties of these films. Increasing oxygen growth pressure from 5 to 20 Pa enhanced the resistivity of P-doped ZnO films by three orders of magnitude. P-doped ZnO films grown at 700 deg. C under 20 Pa O2 exhibited p-type conductivity with hole concentration of 5x1017 cm-3 and hole mobility of 0.3 cm2/V s. Rapid thermal annealing processing decreased the electron density in the P-doped ZnO films. XPS binding energies of P 2s and 2p peaks showed formation of P-O bonds which increased with oxygen pressure in the films. This indicates formation of defect complexes of P dopants occupying zinc sites PZn and zinc vacancies VZn in the P-doped ZnO films.

  2. Structural properties of ZnO films grown by picosecond pulsed-laser deposition

    International Nuclear Information System (INIS)

    Highlights: ► Textured and epitaxial ZnO films grown by picosecond pulsed-laser deposition. ► Epitaxial relationships evidenced on c-cut and r-cut sapphire substrates. ► Nanocrystallised ZnO films obtained with a growth rate 10 times greater than in nanosecond PLD. - Abstract: Zinc oxide thin films have been grown on c-cut (0 0 0 1) and r-cut (11¯02) sapphire substrates by pulsed-laser deposition using a Nd:YAG laser operating at 355 nm in picosecond regime (pulse duration: 42 ps). The composition and the structural properties of the films have been investigated by scanning electron microscopy, Rutherford backscattering spectroscopy and X-ray diffraction according to different substrate temperatures. The RBS spectra show a Zn/O ratio close to 1.1 with a constant in-depth oxygen concentration. The XRD diagrams in Bragg–Brentano geometry display a preferred orientation depending on the used substrate. The large width of XRD peaks is indicative of a small coherence length. In addition, according to the pole figures recorded in asymmetric configuration, epitaxial relationships between substrate and film are evidenced. An increase in the substrate temperature leads to a film crystalline quality improvement. The results are discussed regarding the well-known properties of ZnO films obtained by nanosecond and femtosecond PLD.

  3. Ar ions irradiation effects in ZrN thin films grown by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Craciun, D.; Socol, G.; Dorcioman, G. [Laser Department, National Institute for Laser, Plasma, and Radiation Physics, Bucharest-Magurele (Romania); Simeone, D.; Gosset, D. [CEA/DEN/DANS/DM2S/SERMA/LEPP-LRC CARMEN CEN Saclay France & CNRS/SPMS UMR8785 LRC CARMEN, Ecole Centrale de Paris, F92292 Chatenay Malabry (France); Behdad, S.; Boesl, B. [Department of Mechanical and Materials Engineering, Florida International University, Miami, FL 33174 (United States); Craciun, V., E-mail: valentin.craciun@inflpr.ro [Laser Department, National Institute for Laser, Plasma, and Radiation Physics, Bucharest-Magurele (Romania)

    2015-05-01

    Highlights: • Polycrystalline and hard ZrN films were grown by pulsed laser deposition technique. • The effect of 800 keV Ar ion irradiation on properties of ZrN films was investigated. • ZrN films irradiated with 10{sup 14} Ar ions/cm{sup 2}did not show major structural changes. • Irradiation with 10{sup 15} Ar ions/cm{sup 2} induced large structural and mechanical changes. - Abstract: Thin ZrN films (<500 nm) were grown on (1 0 0)Si substrates at a substrate temperature of 500 °C by the pulsed laser deposition (PLD) technique using a KrF excimer laser under CH{sub 4} or N{sub 2} atmosphere. Glancing incidence X-ray diffraction showed that films were nanocrystalline, while X-ray reflectivity studies indicated that the films were very dense and with a smooth surface. The films were used to study the effect of 800 keV Ar ion irradiation on their structure and properties. After irradiation with a dose of 10{sup 14} at/cm{sup 2} the lattice parameter and crystallites size did marginally change. However, after irradiation with a 10{sup 15} at/cm{sup 2} dose, a clear increase in the lattice parameter accompanied by a significant decrease in nanohardness and Young modulus were observed.

  4. Ar ions irradiation effects in ZrN thin films grown by pulsed laser deposition

    International Nuclear Information System (INIS)

    Highlights: • Polycrystalline and hard ZrN films were grown by pulsed laser deposition technique. • The effect of 800 keV Ar ion irradiation on properties of ZrN films was investigated. • ZrN films irradiated with 1014 Ar ions/cm2did not show major structural changes. • Irradiation with 1015 Ar ions/cm2 induced large structural and mechanical changes. - Abstract: Thin ZrN films (<500 nm) were grown on (1 0 0)Si substrates at a substrate temperature of 500 °C by the pulsed laser deposition (PLD) technique using a KrF excimer laser under CH4 or N2 atmosphere. Glancing incidence X-ray diffraction showed that films were nanocrystalline, while X-ray reflectivity studies indicated that the films were very dense and with a smooth surface. The films were used to study the effect of 800 keV Ar ion irradiation on their structure and properties. After irradiation with a dose of 1014 at/cm2 the lattice parameter and crystallites size did marginally change. However, after irradiation with a 1015 at/cm2 dose, a clear increase in the lattice parameter accompanied by a significant decrease in nanohardness and Young modulus were observed

  5. Static and dynamic magnetic property of MBE-grown Co2FeAl films

    Science.gov (United States)

    Qiao, Shuang; Nie, Shuaihua; Huo, Yan; Zhao, Jianhua; Wu, Yizheng; Zhang, Xinhui

    2014-08-01

    In this work, the static and dynamic magnetic properties of Co2FeAl films grown by molecular beam epitaxy (MBE) were studied by employing the magneto-optical Kerr rotation and ferromagnetic resonance (FMR) measurements. The growth temperature dependent magnetocrystalline anisotropy of MBE-grown Co2FeAl films were first investigated by employing the rotating magneto-optical Kerr effect. Then the magnetization dynamics and Gilbert damping property for high quality Co2FeAl films were investigated in detail by combining both the FMR and time-resolved magneto-optical Kerr rotation techniques. The apparent damping parameter was found to show strong dependence on the strength of the applied magnetic field at low-field regime, but decrease drastically with increasing magnetic field and eventually become a constant value of 0.004 at high-field regime. The inhomogeneity of magnetocrystalline anisotropy and two-magnon scattering are suggested to be responsible for the observed abnormal damping properties observed especially at low field regime. The intrinsic damping parameter of 0.004 is deduced for our highly-ordered Co2FeAl film. Our results provide essential information for highly-ordered MBE-grown Co2FeA film and its possible application in spintronic devices.

  6. Structural characterization of InSb thin films grown by electrodeposition

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Joginder, E-mail: joginderchauhan82@gmail.com; Rajaram, P. [School of Studies in Physics, Jiwaji University, Gwalior-474011 (India)

    2015-06-24

    In the present work we have grown InSb thin films on brass substrates, using the electrodeposition technique. The electrochemical baths used in the growth were made up of aqueous solutions of InCl{sub 3} and SbCl{sub 3} mixed together in various proportions. The films grown were characterized by X-Ray diffraction (XRD), Scanning Electron Microscopy (SEM), and Energy Dispersive Analysis of X-rays (EDAX). Compositional studies show that stoichiometric InSb films can be prepared from a bath containing 0.05M InCl{sub 3} and 0.04M SbCl{sub 3}. XRD studies reveal that the films grown are polycrystalline having the zinc blende structure with (111) orientation. Crystallite size, dislocation density and strain were calculated using the XRD results. Optical transmission spectra were recorded using an FTIR spectrophotometer. The value of direct band gap was found to be around 0.20 eV for the thin films having the best stoichiometry.

  7. Structural, optical and electrochemical properties of TiO2 thin films grown by APCVD method

    International Nuclear Information System (INIS)

    Atmospheric pressure chemical vapor deposition (APCVD) of TiO2 thin films has been achieved onto glass and onto ITO-coated glass substrates, from the reaction of TiCl4 with ethyl acetate (EtOAc). The effect of the synthesis temperature on the optical, structural and electrochemical properties was studied through spectral transmittance, X-ray diffraction (XRD) and electrochemical impedance spectroscopy (EIS) measurements. It was established that the TiO2 films deposited onto glass substrate, at temperatures greater than 400 deg. C grown with rutile type tetragonal structure, whereas the TiO2 films deposited onto ITO-coated glass substrate grown with anatase type structure. EIS was applied as suitable method to determine the charge transfer resistance in the electrolyte/TiO2 interface, typically found in dye-sensitized solar cells.

  8. Do CVD grown graphene films have antibacterial activity on metallic substrates?

    CERN Document Server

    Dellieu, Louis; Reckinger, Nicolas; Didembourg, Christian; Letesson, Jean-Jacques; Sarrazin, Michael; Deparis, Olivier; Matroule, Jean-Yves; Colomer, Jean-François

    2014-01-01

    Accurate assessment of the antibacterial activity of graphene requires consideration of both the graphene fabrication method and, for supported films, the properties of the substrate. Large-area graphene films produced by chemical vapor deposition were grown directly on copper substrates or transferred on a gold substrate and their effect on the viability and proliferation of the Gram-positive bacteria Staphylococcus aureus and the Gram-negative bacteria Escherichia coli were assessed. The viability and the proliferation of both bacterial species were not affected when they were grown on a graphene film entirely covering the gold substrate, indicating that conductivity plays no role on bacterial viability and graphene has no antibacterial activity against S. aureus and E. coli. On the other hand, antibacterial activity was observed when graphene coated the copper substrates, resulting from the release of bactericidal cupric ions in inverse proportion to the graphene surface coverage.

  9. Titanyl phthalocyanine ambipolar thin film transistors making use of carbon nanotube electrodes

    International Nuclear Information System (INIS)

    The capability of efficiently injecting charge carriers into organic films and finely tuning their morphology and structure is crucial to improve the performance of organic thin film transistors (OTFTs). In this work, we investigate OTFTs employing carbon nanotubes (CNTs) as the source-drain electrodes and, as the organic semiconductor, thin films of titanyl phthalocyanine (TiOPc) grown by supersonic molecular beam deposition (SuMBD). While CNT electrodes have shown an unprecedented ability to improve charge injection in OTFTs, SuMBD is an effective technique to tune film morphology and structure. Varying the substrate temperature during deposition, we were able to grow both amorphous (low substrate temperature) and polycrystalline (high substrate temperature) films of TiOPc. Regardless of the film morphology and structure, CNT electrodes led to superior charge injection and transport performance with respect to benchmark Au electrodes. Vacuum annealing of polycrystalline TiOPc films with CNT electrodes yielded ambipolar OTFTs. (paper)

  10. Piezoresponse behavior of niobium doped bismuth ferrite thin films grown by chemical method

    International Nuclear Information System (INIS)

    This paper focuses on the piezoresponse characteristics at room temperature in niobium modified bismuth ferrite thin films (BFN) deposited on Pt/TiO2/SiO2/Si (1 0 0) substrates by the soft chemical method. The obtained films were grown at a temperature of 500 oC. The Nb dopant is effective in improving electrical properties of BFO films. XPS results show a single-phase Nb-doped BFO thin films with a Fe3+ valence state. It was found that Nb-doped BFO thin films exhibited good electrical properties, such as improved capacitance-voltage and high piezoeletric coefficient, indicating a promising material for use in future memories based on magnetic ferroelectrics.

  11. Ethylene hydrogenation on fcc Fe thin films grown on the Rh(100) surface

    Science.gov (United States)

    Egawa, C.; Katayama, S.; Oki, S.

    1997-10-01

    Ethylene hydrogenation on fcc Fe thin films grown on the Rh(100) surface has been studied as a function of film thickness by UPS and TPRS. With the increase of Fe coverage from 1 to 3 ML, the H 2 desorption temperature shifted from 210 to 270 K, in accordance with the growth of the electronic density of states just below the Fermi level. In TPR spectra from ethylene adsorbed at 80 K on the clean Fe thin films, ethylene desorbed at 230 K, although two desorption states were observed at 110 and 210 K for the adsorption of ethylene on H-precovered Fe thin films. Ethane formation is observed from weakly adsorbed ethylene with the destabilized H atoms characteristic of the Fe thin film of 1 ML. This clearly shows that the bonding of FeH as well as the state of adsorbed ethylene plays an important role in ethylene hydrogenation.

  12. Multiple delta doping of single crystal cubic boron nitride films heteroepitaxially grown on (001)diamonds

    Energy Technology Data Exchange (ETDEWEB)

    Yin, H., E-mail: hyin@jlu.edu.cn [State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012 (China); Ziemann, P. [Institute of Solid State Physics, Ulm University, D-89069 Ulm (Germany)

    2014-06-23

    Phase pure cubic boron nitride (c-BN) films have been epitaxially grown on (001) diamond substrates at 900 °C. The n-type doping of c-BN epitaxial films relies on the sequential growth of nominally undoped (p-) and Si doped (n-) layers with well-controlled thickness (down to several nanometer range) in the concept of multiple delta doping. The existence of nominally undoped c-BN overgrowth separates the Si doped layers, preventing Si dopant segregation that was observed for continuously doped epitaxial c-BN films. This strategy allows doping of c-BN films can be scaled up to multiple numbers of doped layers through atomic level control of the interface in the future electronic devices. Enhanced electronic transport properties with higher hall mobility (10{sup 2} cm{sup 2}/V s) have been demonstrated at room temperature as compared to the normally continuously Si doped c-BN films.

  13. Properties of ZnO thin films grown on Si substrates by photo-assisted MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Li Xiangping [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun 130012 (China)], E-mail: lxp2897871@126.com; Zhang Baolin [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun 130012 (China)], E-mail: zbl@jlu.edu.cn; Zhu Huichao [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun 130012 (China); Dong Xin [State Key Laboratory for Materials Modification by Laser, Ion, and Electron Beams and Department of Physics, Dalian University of Technology, Dalian 116024 (China); Xia Xiaochuan [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun 130012 (China); Cui Yongguo [State Key Laboratory for Materials Modification by Laser, Ion, and Electron Beams and Department of Physics, Dalian University of Technology, Dalian 116024 (China); Huang Keke [State Key Laboratory of Inorganic Synthesis and Preparation Chemistry, Jilin University, Qianjin Street 2699, Changchun 130012 (China); Du Guotong [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun 130012 (China); State Key Laboratory for Materials Modification by Laser, Ion, and Electron Beams and Department of Physics, Dalian University of Technology, Dalian 116024 (China)

    2008-01-30

    ZnO thin films were grown on (1 0 0) p-Si substrates by Photo-assisted Metal Organic Chemical Vapor Deposition (PA-MOCVD) using diethylzinc (DEZn) and O{sub 2} as source materials and tungsten-halogen lamp as a light source. The effects of tungsten-halogen lamp irradiation on the surface morphology, structural and optical properties of the deposited ZnO films have been investigated by means of atomic force microscope (AFM), X-ray diffraction and photoluminescence (PL) spectra measurements. Compared with the samples without irradiation, the several characteristics of ZnO films with irradiation are improved, including an improvement in the crystallinity of c-axis orientation, an increase in the grain size and an improvement in optical quality of ZnO films. These results indicated that light irradiation played an important role in the growth of ZnO films by PA-MOCVD.

  14. Properties of ZnO thin films grown on Si substrates by photo-assisted MOCVD

    International Nuclear Information System (INIS)

    ZnO thin films were grown on (1 0 0) p-Si substrates by Photo-assisted Metal Organic Chemical Vapor Deposition (PA-MOCVD) using diethylzinc (DEZn) and O2 as source materials and tungsten-halogen lamp as a light source. The effects of tungsten-halogen lamp irradiation on the surface morphology, structural and optical properties of the deposited ZnO films have been investigated by means of atomic force microscope (AFM), X-ray diffraction and photoluminescence (PL) spectra measurements. Compared with the samples without irradiation, the several characteristics of ZnO films with irradiation are improved, including an improvement in the crystallinity of c-axis orientation, an increase in the grain size and an improvement in optical quality of ZnO films. These results indicated that light irradiation played an important role in the growth of ZnO films by PA-MOCVD

  15. Amorphous indium gallium zinc oxide thin film grown by pulse laser deposition technique

    Science.gov (United States)

    Mistry, Bhaumik V.; Joshi, U. S.

    2016-05-01

    Highly electrically conducting and transparent in visible light IGZO thin film were grown on glass substrate at substrate temperature of 400 C by a pulse laser deposition techniques. Structural, surface, electrical, and optical properties of IGZO thin films were investigated at room temperature. Smooth surface morphology and amorphous nature of the film has been confirmed from the AFM and GIXRD analysis. A resistivity down to 7.7×10-3 V cm was reproducibly obtained while maintaining optical transmission exceeding 70% at wavelengths from 340 to 780 nm. The carrier densities of the film was obtain to the value 1.9×1018 cm3, while the Hall mobility of the IGZO thin film was 16 cm2 V-1S-1.

  16. Structural morphology of amorphous conducting carbon film

    Indian Academy of Sciences (India)

    P N Vishwakarma; V Prasad; S V Subramanyam; V Ganesan

    2005-10-01

    Amorphous conducting carbon films deposited over quartz substrates were analysed using X-ray diffraction and AFM technique. X-ray diffraction data reveal disorder and roughness in the plane of graphene sheet as compared to that of graphite. This roughness increases with decrease in preparation temperature. The AFM data shows surface roughness of carbon films depending on preparation temperatures. The surface roughness increases with decrease in preparation temperature. Also some nucleating islands were seen on the samples prepared at 900°C, which are not present on the films prepared at 700°C. Detailed analysis of these islands reveals distorted graphitic lattice arrangement. So we believe these islands to be nucleating graphitic. Power spectrum density (PSD) analysis of the carbon surface indicates a transition from the nonlinear growth mode to linear surface-diffusion dominated growth mode resulting in a relatively smoother surface as one moves from low preparation temperature to high preparation temperature. The amorphous carbon films deposited over a rough quartz substrate reveal nucleating diamond like structures. The density of these nucleating diamond like structures was found to be independent of substrate temperature (700–900°C).

  17. Nanostructured carbon films with oriented graphitic planes

    International Nuclear Information System (INIS)

    Nanostructured carbon films with oriented graphitic planes can be deposited by applying energetic carbon bombardment. The present work shows the possibility of structuring graphitic planes perpendicular to the substrate in following two distinct ways: (i) applying sufficiently large carbon energies for deposition at room temperature (E>10 keV), (ii) utilizing much lower energies for deposition at elevated substrate temperatures (T>200 deg. C). High resolution transmission electron microscopy is used to probe the graphitic planes. The alignment achieved at elevated temperatures does not depend on the deposition angle. The data provides insight into the mechanisms leading to the growth of oriented graphitic planes under different conditions.

  18. Surface morphology stabilization by chemical sputtering in carbon nitride film growth

    Energy Technology Data Exchange (ETDEWEB)

    Buijnsters, J G [Institute for Molecules and Materials (IMM), Radboud University Nijmegen, Toernooiveld 1, 6525 ED Nijmegen (Netherlands); Vazquez, L [Instituto de Ciencia de Materiales de Madrid (CSIC), C/Sor Juana Ines de la Cruz 3, 28049 Madrid (Spain)

    2008-01-07

    We have studied the influence of chemical sputtering effects on the morphology of carbon nitride films grown on silicon substrates by electron cyclotron resonance chemical vapour deposition. This study has been performed by comparing the evolution of their morphology with that of hydrogenated amorphous carbon films grown under similar conditions, where these effects are not present. When chemical sputtering effects operate we observe a film surface stabilization for length scales in the 60-750 nm range after a threshold roughness of about 3-4 nm has been developed. This stabilization is explained on the basis of the re-emission of nitrogen etching species, which is confirmed by growth experiments on microstructured substrates. (fast track communication)

  19. Swift heavy ion irradiation of metal containing tetrahedral amorphous carbon films

    Science.gov (United States)

    Karaseov, P. A.; Protopopova, V. S.; Karabeshkin, K. V.; Shubina, E. N.; Mishin, M. V.; Koskinen, J.; Mohapatra, S.; Tripathi, A.; Avasthi, D. K.; Titov, A. I.

    2016-07-01

    Thin carbon films were grown at room temperature on (0 0 1) n-Si substrate using dual cathode filtered vacuum arc deposition system. Graphite was used as a source of carbon atoms and separate metallic electrode was simultaneously utilized to introduce Ni or Cu atoms. Films were irradiated by 100 MeV Ag7+ ions to fluences in the range 1 × 1010-3 × 1011 cm-2. Rutherford backscattering spectroscopy, Raman scattering, scanning electron microscopy and atomic force microscopy in conductive mode were used to investigate film properties and structure change under irradiation. Some conductive channels having metallic conductivity type were found in the films. Number of such channels is less than number of impinged ions. Presence of Ni and Cu atoms increases conductivity of those conductive channels. Fluence dependence of all properties studied suggests different mechanisms of swift heavy ion irradiation-induced transformation of carbon matrix due to different chemical effect of nickel and copper atoms.

  20. Nanocrystalline thin films of CuInS2 grown by spray pyrolysis

    International Nuclear Information System (INIS)

    Nanocrystalline thin films of CuInS2 were grown on glass substrates using the spray pyrolysis technique. An aqueous mixture of solutions of CuCl2, InCl3 and CS(NH2)2 was converted into a fine colloidal solution by adding acetonitrile, and was then sprayed on to heated glass substrates, to produce the nanocrystalline films of CuInS2. The films were characterized using XRD, TEM, electron diffraction, SEM, EDAX, AFM and optical transmission spectra. AFM and TEM micrographs together with electron diffraction and XRD show that the films grown in the temperature range 275-325 deg. C are made up of single phase nano-sized (10-25 nm) particles of CuInS2. XRD calculations show that the crystallite size of the films ranges from 8 nm to about 15 nm. Optical absorption studies show that the band gap of the sprayed CuInS2 films is in the range 1.48-1.54 eV.

  1. Spectroscopic characterization of ZrO2 thin films grown by atomic layer deposition

    International Nuclear Information System (INIS)

    Zirconium dioxide films grown by atomic layer deposition from ZrCl4 and H2O at substrate temperatures of 500-870 K were characterized using spectroscopic methods. A significant influence of the phase composition on absorption and photoluminescence spectra was observed. The band-gap energies determined from absorption spectra of films with monoclinic structure grown at 670-870 K ranged from 5.25 to 5.28 eV. Low-temperature (10 K) photoexcitation of these films resulted in a non-elementary emission band with the maximum at 4.25-4.35 eV, tentatively assigned to the radiative decay of self-trapped excitons. The low-energy edges of the excitation spectra coincided with the edges of intrinsic absorption. A film that was grown at 500 K and contained tetragonal ZrO2 with large amounts of impurities had an absorption edge at 5.26 eV and wide emission band at 3.0 eV, which could be excited at as low photon energy as 4.9 eV. (author)

  2. Thermal stability of epitaxial Fe films grown on Si substrates by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Epitaxial Fe films are grown on Si(0 0 1) and Si(1 1 1) substrates by molecular beam epitaxy at room temperature. Several samples of one Fe/Si structure are subjected to rapid thermal annealing from 100 to 500 °C. The annealing impact on the morphological, magnetic properties and interfacial heterostructures of these samples is examined by atomic force microscopy, vibrating sample magnetometer and transmission electron microscopy, respectively. The results demonstrate that the material system Fe/Si grown at room temperature exhibits an abrupt interface and is thermally stable up to a temperature of 150 °C.

  3. Deep electron traps in CdTe:In films grown by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Zakrzewski, A.K.; Dobaczewski, L.; Karczewski, G.; Wojtowicz, T.; Kossut, J. [Institute of Physics, Polish Academy of Science, Warsaw (Poland)

    1995-12-31

    N-type indium CdTe grown on n{sup +}-GaAs molecular beam epitaxy has been studied by the standard deep level transient spectroscopy and the isothermal Laplace-transform deep level transient spectroscopy. It was found that the Cd/Te flux ratio strongly influences the deep level transient spectroscopy results. The unusual temperature dependence of the electron emission rate in films grown at nearly stoichiometric conditions may point out that the observed defect is resonant with the conduction band. (author). 5 refs, 1 fig.

  4. Studies of nanostructured copper/hydrogenated amorphous carbon multilayer films

    International Nuclear Information System (INIS)

    Research highlights: → Multilayer coatings have been grown by RF-PECVD and RF-sputtering techniques under varied bilayers from one to four. → After deposition these coatings were characterized for stress, hardness, elastic modulus, SEM, AFM, XPS, EDAX, SIMS, PL, transmission, and conductivity. → Observed results were correlated fairly with each other. - Abstract: Nanostructured copper/hydrogenated amorphous carbon (a-C:H) multilayer grown in a low base vacuum (1 x 10-3 Torr) system combining plasma-enhanced chemical vapor deposition and sputtering techniques. These nanostructured multilayer were found to exhibit improved electrical, optical, surface and structural properties, compared to that of monolayer a-C:H films. The residual stresses of such multilayer structure were found well below 1 GPa. Scanning electron microscopy and atomic force microscopy results revealed a nanostructured surface morphology and low surface roughnesses values. X-ray photoelectron spectroscopy, secondary ion mass spectroscopy and energy dispersive X-ray analysis confirmed a very small amount of copper in these films. These structures exhibited very high optical transparency in the near infrared region (∼90%) and the optical band gap varied from 1.35 to 1.7 eV. It was noticed that the temperature dependent conductivity improved due to the presence of both copper and the nano-structured morphology.

  5. Origin of graphitic filaments on improving the electron field emission properties of negative bias-enhanced grown ultrananocrystalline diamond films in CH{sub 4}/Ar plasma

    Energy Technology Data Exchange (ETDEWEB)

    Sankaran, K. J.; Tai, N. H., E-mail: inanlin@mail.tku.edu.tw, E-mail: nhtai@mse.nthu.edu.tw [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300, Taiwan (China); Huang, B. R.; Saravanan, A. [Graduate Institute of Electro-Optical Engineering and Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China); Lin, I. N., E-mail: inanlin@mail.tku.edu.tw, E-mail: nhtai@mse.nthu.edu.tw [Department of Physics, Tamkang University, Tamsui 251, Taiwan (China)

    2014-10-28

    Microstructural evolution of bias-enhanced grown (BEG) ultrananocrystalline diamond (UNCD) films has been investigated using microwave plasma enhanced chemical vapor deposition in gas mixtures of CH{sub 4} and Ar under different negative bias voltages ranging from −50 to −200 V. Scanning electron microscopy and Raman spectroscopy were used to characterize the morphology, growth rate, and chemical bonding of the synthesized films. Transmission electron microscopic investigation reveals that the application of bias voltage induced the formation of the nanographitic filaments in the grain boundaries of the films, in addition to the reduction of the size of diamond grains to ultra-nanosized granular structured grains. For BEG-UNCD films under −200 V, the electron field emission (EFE) process can be turned on at a field as small as 4.08 V/μm, attaining a EFE current density as large as 3.19 mA/cm{sup 2} at an applied field of 8.64 V/μm. But the films grown without bias (0 V) have mostly amorphous carbon phases in the grain boundaries, possessing poorer EFE than those of the films grown using bias. Consequently, the induction of nanographitic filaments in grain boundaries of UNCD films grown in CH{sub 4}/Ar plasma due to large applied bias voltage of −200 V is the prime factor, which possibly forms interconnected paths for facilitating the transport of electrons that markedly enhance the EFE properties.

  6. Microwave and Millimeter Wave Properties of Vertically-Aligned Single Wall Carbon Nanotubes Films

    Science.gov (United States)

    Haddadi, K.; Tripon-Canseliet, C.; Hivin, Q.; Ducournau, G.; Teo, E.; Coquet, P.; Tay, B. K.; Lepilliet, S.; Avramovic, V.; Chazelas, J.; Decoster, D.

    2016-05-01

    We present the experimental determination of the complex permittivity of vertically aligned single wall carbon nanotubes (SWCNTs) films grown on quartz substrates in the microwave regime from 10 MHz up to 67 GHz, with the electrical field perpendicular to the main axis of the carbon nanotubes (CNTs), based on coplanar waveguide transmission line approach together with the measurement of the microwave impedance of top metalized vertically—aligned SWCNTs grown on conductive silicon substrates up to 26 GHz. From coplanar waveguide measurements, we obtain a real part of the permittivity almost equal to unity, which is interpreted in terms of low carbon atom density (3 × 1019 at/cm3) associated with a very low imaginary part of permittivity (grown CNTs bundles.

  7. Structural and morphological characterizations of ZnO films grown on GaAs substrates by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Agouram, S.; Zuniga Perez, J.; Munoz-Sanjose, V. [Universitat de Valencia, Departamento de Fisica Aplicada y Electromagnetismo, Burjassot (Spain)

    2007-07-15

    ZnO films were grown on GaAs(100), GaAs(111)A and GaAs(111)B substrates by metal organic chemical vapour deposition (MOCVD). Diethylzinc (DEZn) and tertiarybutanol (t-butanol) were used as Zn and O precursors, respectively. The influence of the growth temperature and GaAs substrate orientation on the crystalline orientation and morphology of the ZnO grown films has been analysed. Crystallinity of grown films was studied by X-ray diffraction (XRD); thickness and morphology of ZnO films were investigated by scanning electron microscopy (SEM). SEM results reveal significant differences between morphologies depending on growth temperature but not significant differences were detected on the texture of grown films. (orig.)

  8. Optical and Structural Properties of Nanocrystalline CdS Thin Films Grown by Chemical Bath Deposition

    International Nuclear Information System (INIS)

    Nanocrystalline cadmium sulfide thin films are prepared using chemical bath deposition (CBD) technique in aqueous alkaline bath at 60 degree Celsius and their subsequent condensation on glass substrates. Effects of annealing on structural, morphological and optical properties are presented and discussed. The best annealing temperature for CBD grown CdS films is found to be 350 degree Celsius from optical properties. The optical and structural properties of CdS films are found to be sensitive to annealing temperature and are described in terms of XRD, SEM, transmission spectra and optical studies. The structural parameters such as crystallite size have been evaluated through XRD while SEM micrographs exhibit ordering of grains after annealing. The transmission spectra shift towards higher wavelength upon annealing indicating increase in crystallinity. Annealing over 350 degree Celsius is found to degrade the external structure and optical properties of the film. (author)

  9. Cd Te polycrystalline films grown by double process close-space vapor transport technique

    International Nuclear Information System (INIS)

    The characteristics of the Cd Te polycrystalline films grown by the new technique of double process-close-space vapor transport technique are presented. This process can be divided in two steps: at the first step, a graphite source boat packed with Cd Te powder act as the Cd Te source and other graphite block with or without Corning glass cover is used as auxiliary substrate. At the second step, the film deposited in the first step over graphite block or Corning glass is used as Cd Te source. Different substrates were used to obtain polycrystalline Cd Te films. we describe the oxygen and temperature influences on the structural and the morphological properties of different films: Cd Te/glass, Cd Te/SnO2/glass and Cd Te/CdS/SnO2/ glass. (Author)

  10. N-Type Conductive Ultrananocrystalline Diamond Films Grown by Hot Filament CVD

    Directory of Open Access Journals (Sweden)

    Michael Mertens

    2015-01-01

    Full Text Available We present the synthesis of ultrananocrystalline diamond (UNCD films by application of hot filament chemical vapor deposition (HFCVD. We furthermore studied the different morphological, structural, and electrical properties. The grown films are fine grained with grain sizes between 4 and 7 nm. The UNCD films exhibit different electrical conductivities, dependent on grain boundary structure. We present different contact metallizations exhibiting ohmic contact behavior and good adhesion to the UNCD surface. The temperature dependence of the electrical conductivity is presented between −200 and 900°C. We furthermore present spectroscopic investigations of the films, supporting that the origin of the conductivity is the structure and volume of the grain boundary.

  11. On detection of the Fermi edge in in situ grown thin films of high- Tc oxides

    Science.gov (United States)

    Abrecht, M.; Ariosa, D.; Saleh, S. A.; Rast, S.; Margaritondo, G.; Onellion, M.; Pavuna, D.

    2001-11-01

    We discuss our systematic series of experiments on the photoelectric detection of the Fermi edge using a cylindrical mirror analyser on films of high- Tc oxides, grown in situ by pulsed laser ablation. The Fermi edge (comparable to the edge of the reference Ag) is very easily observed even in the two-phase BSCCO-2212 film that exhibits onsets of superconducting transitions, at 85 and 45 K. In contrast, the Fermi edge is weaker and more difficult to observe even in the state-of-the-art, highly epitaxial, monophase YBa 2Cu 3O 7- y (YBCO) and NdBa 2Cu 3O 7- y (NBCO-123) films (both with Tc=92 K). So far we could not detect the Fermi edge in the films of the double-`chain' YBCO-124.

  12. Structural, optical and electrochromic properties of nickel oxide thin films grown from electrodeposited nickel sulphide

    International Nuclear Information System (INIS)

    Nickel oxide thin films were grown onto FTO-coated glass substrates by a two-step process: electrodeposition of nickel sulphide and their thermal oxidation at 425, 475 and 525 deg. C. The influence of thermal oxidation temperature on structural, optical, morphological and electrochromic properties was studied. The structural properties undoubtedly revealed NiO formation. The electrochromic properties were studied by means of cyclic voltammetry. The films exhibited anodic electrochromism, changing from a transparent state to a coloured state at +0.75 V versus SCE, i.e. by simultaneous ion and electron ejection. The transmittance in the coloured and bleached states was recorded to access electrochromic quality of the films. Colouration efficiency and electrochromic reversibility were found to be maximum (21 mC/cm2 and 89%, respectively) for the films oxidized at 425 deg. C. The optical band gap energy of nickel oxide slightly varies with increase in annealing temperature

  13. Structural, optical and electrochromic properties of nickel oxide thin films grown from electrodeposited nickel sulphide

    Energy Technology Data Exchange (ETDEWEB)

    Uplane, M.M.; Mujawar, S.H.; Inamdar, A.I.; Shinde, P.S.; Sonavane, A.C. [Thin Film Materials Laboratory, Department of Physics, Shivaji University, Kolhapur 416004, Maharashtra (India); Patil, P.S. [Thin Film Materials Laboratory, Department of Physics, Shivaji University, Kolhapur 416004, Maharashtra (India)], E-mail: psp_phy@unishivaji.ac.in

    2007-10-15

    Nickel oxide thin films were grown onto FTO-coated glass substrates by a two-step process: electrodeposition of nickel sulphide and their thermal oxidation at 425, 475 and 525 deg. C. The influence of thermal oxidation temperature on structural, optical, morphological and electrochromic properties was studied. The structural properties undoubtedly revealed NiO formation. The electrochromic properties were studied by means of cyclic voltammetry. The films exhibited anodic electrochromism, changing from a transparent state to a coloured state at +0.75 V versus SCE, i.e. by simultaneous ion and electron ejection. The transmittance in the coloured and bleached states was recorded to access electrochromic quality of the films. Colouration efficiency and electrochromic reversibility were found to be maximum (21 mC/cm{sup 2} and 89%, respectively) for the films oxidized at 425 deg. C. The optical band gap energy of nickel oxide slightly varies with increase in annealing temperature.

  14. Structural, optical and electrochromic properties of nickel oxide thin films grown from electrodeposited nickel sulphide

    Science.gov (United States)

    Uplane, M. M.; Mujawar, S. H.; Inamdar, A. I.; Shinde, P. S.; Sonavane, A. C.; Patil, P. S.

    2007-10-01

    Nickel oxide thin films were grown onto FTO-coated glass substrates by a two-step process: electrodeposition of nickel sulphide and their thermal oxidation at 425, 475 and 525 °C. The influence of thermal oxidation temperature on structural, optical, morphological and electrochromic properties was studied. The structural properties undoubtedly revealed NiO formation. The electrochromic properties were studied by means of cyclic voltammetry. The films exhibited anodic electrochromism, changing from a transparent state to a coloured state at +0.75 V versus SCE, i.e. by simultaneous ion and electron ejection. The transmittance in the coloured and bleached states was recorded to access electrochromic quality of the films. Colouration efficiency and electrochromic reversibility were found to be maximum (21 mC/cm 2 and 89%, respectively) for the films oxidized at 425 °C. The optical band gap energy of nickel oxide slightly varies with increase in annealing temperature.

  15. Free-standing thin film Ge single crystals grown by plasma-enhanced chemical vapor deposition

    Science.gov (United States)

    Outlaw, R. A.; Hopson, P., Jr.

    1984-01-01

    The films, which are approximately 10 microns in thickness, are grown epitaxially on polished (100) NaCl substrates at 450 C by plasma enhanced chemical vapor deposition. Upon cooling, the films are separated from the substrate by differential shear stress, leaving free-standing films of Ge which can be handled. Growths are attained by nucleating at minimum plasma power for very brief intervals and then raising the power to 65 W to increase the growth rate to approximately 10 microns/h. It is found that substrate exposure to the plasma at too high a power for too long a time sputters and erodes the surface, thereby substantially degrading the nucleation process and the ultimate growths. It is noted that the free-standing films are visually specular and exhibit a high degree of crystalline order when examined by X-ray diffraction. Auger electron spectroscopy and energy dispersive analysis of X-rays reveal no detectable bulk contamination.

  16. Reordering between tetrahedral and octahedral sites in ultrathin magnetite films grown on MgO(001)

    International Nuclear Information System (INIS)

    Magnetite ultrathin films were grown using different deposition rates and substrate temperatures. The structure of these films was studied using (grazing incidence) x-ray diffraction, while their surface structure was characterized by low energy electron diffraction. In addition to that, we performed x-ray photoelectron spectroscopy and magneto optic Kerr effect measurements to probe the stoichiometry of the films as well as their magnetic properties. The diffraction peaks of the inverse spinel structure, which originate exclusively from Fe ions on tetrahedral sites are strongly affected by the preparation conditions, while the octahedral sites remain almost unchanged. With both decreasing deposition rate as well as decreasing substrate temperature, the integrated intensity of the diffraction peaks originating exclusively from Fe on tetrahedral sites is decreasing. We propose that the ions usually occupying tetrahedral sites in magnetite are relocated to octahedral vacancies. Ferrimagnetic behaviour is only observed for well ordered magnetite films.

  17. High-quality AlN films grown on chemical vapor-deposited graphene films

    OpenAIRE

    Chen Bin-Hao; Hsu Hsiu-Hao; Lin David T.W.

    2016-01-01

    We report the growth of high-quality AlN films on graphene. The graphene films were synthesized by CVD and then transferred onto silicon substrates. Epitaxial aluminum nitride films were deposited by DC magnetron sputtering on both graphene as an intermediate layer and silicon as a substrate. The structural characteristics of the AlN films and graphene were investigated. Highly c-axis-oriented AlN crystal structures are investigated based on the XRDpatterns observations.

  18. High-quality AlN films grown on chemical vapor-deposited graphene films

    Directory of Open Access Journals (Sweden)

    Chen Bin-Hao

    2016-01-01

    Full Text Available We report the growth of high-quality AlN films on graphene. The graphene films were synthesized by CVD and then transferred onto silicon substrates. Epitaxial aluminum nitride films were deposited by DC magnetron sputtering on both graphene as an intermediate layer and silicon as a substrate. The structural characteristics of the AlN films and graphene were investigated. Highly c-axis-oriented AlN crystal structures are investigated based on the XRDpatterns observations.

  19. Adsorption properties of Mg-Al layered double hydroxides thin films grown by laser based techniques

    Energy Technology Data Exchange (ETDEWEB)

    Matei, A., E-mail: andreeapurice@nipne.ro [National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Str., 77125 Bucharest, Magurele (Romania); Birjega, R.; Vlad, A.; Filipescu, M.; Nedelcea, A.; Luculescu, C. [National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Str., 77125 Bucharest, Magurele (Romania); Zavoianu, R.; Pavel, O.D. [University of Bucharest, Faculty of Chemistry, Department of Chemical Technology and Catalysis, 4-12 Regina Elisabeta Bd., Bucharest (Romania); Dinescu, M. [National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Str., 77125 Bucharest, Magurele (Romania)

    2012-09-15

    Highlights: Black-Right-Pointing-Pointer Laser techniques MAPLE and PLD can successfully be used to produce LDHs thin films. Black-Right-Pointing-Pointer Hydration treatments of the PLD and MAPLE deposited films lead to the LDH reconstruction effect. Black-Right-Pointing-Pointer The Ni retention from aqueous solution occurs in the films via a dissolution-reconstruction mechanism. Black-Right-Pointing-Pointer The films are suitable for applications in remediation of contaminated drinking water or waste waters. - Abstract: Powdered layered double hydroxides (LDHs) have been widely studied due to their applications as catalysts, anionic exchangers or host materials for inorganic and/or organic molecules. Assembling nano-sized LDHs onto flat solid substrates forming thin films is an expanding area of research due to the prospects of novel applications as sensors, corrosion-resistant coatings, components in optical and magnetic devices. Continuous and adherent thin films were grown by laser techniques (pulsed laser deposition - PLD and matrix assisted pulsed laser evaporation - MAPLE) starting from targets of Mg-Al LDHs. The capacity of the grown thin films to retain a metal (Ni) from contaminated water has been also explored. The thin films were immersed in an Ni(NO{sub 3}){sub 2} aqueous solutions with Ni concentrations of 10{sup -3}% (w/w) (1 g/L) and 10{sup -4}% (w/w) (0.1 g/L), respectively. X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM) combined with energy dispersive X-ray analysis (EDX) were the techniques used to characterize the prepared materials.

  20. Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition.

    Science.gov (United States)

    Shih, Huan-Yu; Lin, Ming-Chih; Chen, Liang-Yih; Chen, Miin-Jang

    2015-01-01

    The growth of uniform gallium nitride (GaN) thin films was reported on (100) Si substrate by remote plasma atomic layer deposition (RP-ALD) using triethylgallium (TEG) and NH3 as the precursors. The self-limiting growth of GaN was manifested by the saturation of the deposition rate with the doses of TEG and NH3. The increase in the growth temperature leads to the rise of nitrogen content and improved crystallinity of GaN thin films, from amorphous at a low deposition temperature of 200 °C to polycrystalline hexagonal structures at a high growth temperature of 500 °C. No melting-back etching was observed at the GaN/Si interface. The excellent uniformity and almost atomic flat surface of the GaN thin films also infer the surface control mode of the GaN thin films grown by the RP-ALD technique. The GaN thin films grown by RP-ALD will be further applied in the light-emitting diodes and high electron mobility transistors on (100) Si substrate. PMID:25494474

  1. Effect of deposition temperature on the properties of sputtered YIG films grown on quartz

    International Nuclear Information System (INIS)

    Yttrium Iron Garnet (YIG), Y3Fe5O12, is an oxide material that has potential applications in the magneto-optical recording media and microwave device industries. These materials, when synthesized in thin film form, usually require post-deposition annealing in order to enhance their physical properties. Furthermore, integration of YIG based optical components requires the synthesis of high quality YIG material on quartz, a process that may be problematic due to poor adhesion and lattice mismatch. Thus, we have conducted a study on the effect of deposition temperature (from 25 to 800 deg. C) and post-deposition annealing (at 740 deg. C) on the crystalline quality and chemical composition of YIG thin films, grown by radio-frequency magnetron sputtering, on quartz substrates. X-ray diffraction (XRD) shows that as-grown layers are amorphous, and subsequent annealing is necessary to induce film crystallization. Rutherford backscattering spectrometry analyses were also conducted and the chemical composition of the films was found to depend on initial deposition temperature and is affected by post-deposition anneals. Comparison of the XRD and RBS results point out to the existence of an optimal deposition temperature at about 700 deg. C for the formation of high crystalline quality and stoichiometric YIG thin films. Magnetic measurements were found to correlate to the XRD and RBS analyses.

  2. Group III-nitride thin films grown using MBE and bismuth

    Science.gov (United States)

    Kisielowski, Christian K.; Rubin, Michael

    2000-01-01

    The present invention comprises growing gallium nitride films in the presence of bismuth using MBE at temperatures of about 1000 K or less. The present invention further comprises the gallium nitride films fabricated using the inventive fabrication method. The inventive films may be doped with magnesium or other dopants. The gallium nitride films were grown on sapphire substrates using a hollow anode Constricted Glow Discharge nitrogen plasma source. When bismuth was used as a surfactant, two-dimensional gallium nitride crystal sizes ranging between 10 .mu.m and 20 .mu.m were observed. This is 20 to 40 times larger than crystal sizes observed when GaN films were grown under similar circumstances but without bismuth. It is thought that the observed increase in crystal size is due bismuth inducing an increased surface diffusion coefficient for gallium. The calculated value of 4.7.times.10.sup.-7 cm.sup.2 /sec. reveals a virtual substrate temperature of 1258 K which is 260 degrees higher than the actual one.

  3. Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition

    International Nuclear Information System (INIS)

    The growth of uniform gallium nitride (GaN) thin films was reported on (100) Si substrate by remote plasma atomic layer deposition (RP-ALD) using triethylgallium (TEG) and NH3 as the precursors. The self-limiting growth of GaN was manifested by the saturation of the deposition rate with the doses of TEG and NH3. The increase in the growth temperature leads to the rise of nitrogen content and improved crystallinity of GaN thin films, from amorphous at a low deposition temperature of 200 °C to polycrystalline hexagonal structures at a high growth temperature of 500 °C. No melting-back etching was observed at the GaN/Si interface. The excellent uniformity and almost atomic flat surface of the GaN thin films also infer the surface control mode of the GaN thin films grown by the RP-ALD technique. The GaN thin films grown by RP-ALD will be further applied in the light-emitting diodes and high electron mobility transistors on (100) Si substrate. (paper)

  4. Yttria and ceria doped zirconia thin films grown by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Saporiti, F.; Juarez, R. E., E-mail: cididi@fi.uba.ar [Grupo de Materiales Avanzados, Facultad de Ingenieria, Universidad de Buenos Aires (Argentina); Audebert, F. [Consejo Nacional de Investigaciones Cientificas y Tecnicas (CONICET) (Argentina); Boudard, M. [Laboratoire des Materiaux et du Genie Physique (CNRS), Grenoble (France)

    2013-11-01

    The Yttria stabilized Zirconia (YSZ) is a standard electrolyte for solid oxide fuel cells (SOFCs), which are potential candidates for next generation portable and mobile power sources. YSZ electrolyte thin films having a cubic single phase allow reducing the SOFC operating temperature without diminishing the electrochemical power density. Films of 8 mol% Yttria stabilized Zirconia (8YSZ) and films with addition of 4 weight% Ceria (8YSZ + 4CeO{sub 2}) were grown by pulsed laser deposition (PLD) technique using 8YSZ and 8YSZ + 4CeO{sub 2} targets and a Nd-YAG laser (355 nm). Films have been deposited on Soda-Calcia-Silica glass and Si(100) substrates at room temperature. The morphology and structural characteristics of the samples have been studied by means of X-ray diffraction and scanning electron microscopy. Films of a cubic-YSZ single phase with thickness in the range of 1-3 Micro-Sign m were grown on different substrates (author)

  5. Chemical vapor deposition of high quality graphene films from carbon dioxide atmospheres.

    Science.gov (United States)

    Strudwick, Andrew James; Weber, Nils Eike; Schwab, Matthias Georg; Kettner, Michel; Weitz, R Thomas; Wünsch, Josef R; Müllen, Klaus; Sachdev, Hermann

    2015-01-27

    The realization of graphene-based, next-generation electronic applications essentially depends on a reproducible, large-scale production of graphene films via chemical vapor deposition (CVD). We demonstrate how key challenges such as uniformity and homogeneity of the copper metal substrate as well as the growth chemistry can be improved by the use of carbon dioxide and carbon dioxide enriched gas atmospheres. Our approach enables graphene film production protocols free of elemental hydrogen and provides graphene layers of superior quality compared to samples produced by conventional hydrogen/methane based CVD processes. The substrates and resulting graphene films were characterized by scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX) and Raman microscopy, sheet resistance and transport measurements. The superior quality of the as-grown graphene films on copper is indicated by Raman maps revealing average G band widths as low as 18 ± 8 cm(-1) at 514.5 nm excitation. In addition, high charge carrier mobilities of up to 1975 cm(2)/(V s) were observed for electrons in transferred films obtained from a carbon dioxide based growth protocol. The enhanced graphene film quality can be explained by the mild oxidation properties of carbon dioxide, which at high temperatures enables an uniform conditioning of the substrates by an efficient removal of pre-existing and emerging carbon impurities and a continuous suppression and in situ etching of carbon of lesser quality being co-deposited during the CVD growth. PMID:25398132

  6. Properties of Ferromagnetic Ga1-xMnxN Films Grown by Ammonia-MBE

    OpenAIRE

    Sonoda, Saki; Hori, Hidenobu; Yamamoto, Yoshiyuki; Sasaki, Takahiko; Sato, Masugu; Shimizu, Saburo; Suga, Ken-ichi; Kindo, Koichi

    2002-01-01

    Using ammonia as nitrogen source for molecular beam epitaxy, the GaN-based diluted magnetic semiconductor Ga1-xMnxN is successfully grown with Mn concentration up to x~6.8% and with p-type conductivity. The films have wurtzite structure with substitutional Mn on Ga site in GaN. Magnetization measurements revealed that Ga1-xMnxN is ferromagnetic at temperatures higher than room temperature. The ferromagnetic-paramagnetic transition temperature, Tc, depends on the Mn concentration of the film. ...

  7. Structural evolution of Re (0001) thin films grown on Nb (110) surfaces by molecular beam epitaxy

    OpenAIRE

    Welander, Paul B.

    2010-01-01

    The heteroepitaxial growth of Re (0001) films on Nb (110) surfaces has been investigated. Nb/Re bilayers were grown on A-plane sapphire -- alpha-Al2O3 (11-20) -- by molecular beam epitaxy. While Re grew with a (0001) surface, the in-plane epitaxial relationship with the underlying Nb could be best described as a combination of Kurdjumov-Sachs and Nishiyama-Wassermann orientations. This relationship was true regardless of Re film thickness. However, an evolution of the surface morphology with ...

  8. Irradiation induced improvement in crystallinity of epitaxially grown Ag thin films on Si substrates

    Energy Technology Data Exchange (ETDEWEB)

    Takahiro, Katsumi; Nagata, Shinji; Yamaguchi, Sadae [Tohoku Univ., Sendai (Japan). Inst. for Materials Research

    1997-03-01

    We report the improvement in crystallinity of epitaxially grown Ag films on Si(100) substrates with ion irradiation. The irradiation of 0.5 MeV Si ions to 2x10{sup 16}/cm{sup 2} at 200degC, for example, reduces the channeling minimum yield from 60% to 6% at Ag surface. The improvement originates from the decrease of mosaic spread in the Ag thin film. In our experiments, ion energy, ion species and irradiation temperature have been varied. The better crystallinity is obtained as the higher concentration of defect is generated. The mechanism involved in the irradiation induced improvement is discussed. (author)

  9. Solution-Grown Monocrystalline Hybrid Perovskite Films for Hole-Transporter-Free Solar Cells.

    Science.gov (United States)

    Peng, Wei; Wang, Lingfei; Murali, Banavoth; Ho, Kang-Ting; Bera, Ashok; Cho, Namchul; Kang, Chen-Fang; Burlakov, Victor M; Pan, Jun; Sinatra, Lutfan; Ma, Chun; Xu, Wei; Shi, Dong; Alarousu, Erkki; Goriely, Alain; He, Jr-Hau; Mohammed, Omar F; Wu, Tom; Bakr, Osman M

    2016-05-01

    High-quality perovskite monocrystalline films are successfully grown through cavitation-triggered asymmetric crystallization. These films enable a simple cell structure, ITO/CH3 NH3 PbBr3 /Au, with near 100% internal quantum efficiency, promising power conversion efficiencies (PCEs) >5%, and superior stability for prototype cells. Furthermore, the monocrystalline devices using a hole-transporter-free structure yield PCEs ≈6.5%, the highest among other similar-structured CH3 NH3 PbBr3 solar cells to date. PMID:26931100

  10. Solution-Grown Monocrystalline Hybrid Perovskite Films for Hole-Transporter-Free Solar Cells

    KAUST Repository

    Peng, Wei

    2016-03-02

    High-quality perovskite monocrystalline films are successfully grown through cavitation-triggered asymmetric crystallization. These films enable a simple cell structure, ITO/CH3NH3PbBr3/Au, with near 100% internal quantum efficiency, promising power conversion efficiencies (PCEs) >5%, and superior stability for prototype cells. Furthermore, the monocrystalline devices using a hole-transporter-free structure yield PCEs ≈6.5%, the highest among other similar-structured CH3NH3PbBr3 solar cells to date.

  11. Residual stress in AlN films grown on sapphire substrates by molecular beam epitaxy

    Science.gov (United States)

    Rong, Xin; Wang, Xinqiang; Chen, Guang; Pan, Jianhai; Wang, Ping; Liu, Huapeng; Xu, Fujun; Tan, Pingheng; Shen, Bo

    2016-05-01

    Residual stress in AlN films grown by molecular beam epitaxy (MBE) has been studied by Raman scattering spectroscopy. A strain-free Raman frequency and a biaxial stress coefficient for E2(high) mode are experimentally determined to be 657.8 ± 0.3 cm-1 and 2.4 ± 0.2 cm-1 / GPa, respectively. By using these parameters, the residual stress of a series of AlN layers grown under different buffer layer conditions has been investigated. The residual compressive stress is found to be obviously decreased by increasing the Al/N beam flux ratio of the buffer layer, indicating the generation of tensile stress due to stronger coalescence of AlN grains, as also confirmed by the in-situ reflection high energy electron diffraction (RHEED) monitoring observation. The stronger coalescence does lead to improved quality of AlN films as expected.

  12. Thin films of copper oxide and copper grown by atomic layer deposition for applications in metallization systems of microelectronic devices

    Energy Technology Data Exchange (ETDEWEB)

    Waechtler, Thomas

    2010-05-25

    Copper-based multi-level metallization systems in today's ultralarge-scale integrated electronic circuits require the fabrication of diffusion barriers and conductive seed layers for the electrochemical metal deposition. Such films of only several nanometers in thickness have to be deposited void-free and conformal in patterned dielectrics. The envisaged further reduction of the geometric dimensions of the interconnect system calls for coating techniques that circumvent the drawbacks of the well-established physical vapor deposition. The atomic layer deposition method (ALD) allows depositing films on the nanometer scale conformally both on three-dimensional objects as well as on large-area substrates. The present work therefore is concerned with the development of an ALD process to grow copper oxide films based on the metal-organic precursor bis(trin- butylphosphane)copper(I)acetylacetonate [({sup n}Bu{sub 3}P){sub 2}Cu(acac)]. This liquid, non-fluorinated {beta}-diketonate is brought to react with a mixture of water vapor and oxygen at temperatures from 100 to 160 C. Typical ALD-like growth behavior arises between 100 and 130 C, depending on the respective substrate used. On tantalum nitride and silicon dioxide substrates, smooth films and selfsaturating film growth, typical for ALD, are obtained. On ruthenium substrates, positive deposition results are obtained as well. However, a considerable intermixing of the ALD copper oxide with the underlying films takes place. Tantalum substrates lead to a fast self-decomposition of the copper precursor. As a consequence, isolated nuclei or larger particles are always obtained together with continuous films. The copper oxide films grown by ALD can be reduced to copper by vapor-phase processes. If formic acid is used as the reducing agent, these processes can already be carried out at similar temperatures as the ALD, so that agglomeration of the films is largely avoided. Also for an integration with subsequent

  13. Carrier dynamics in ZnxCd1-xO films grown by molecular beam epitaxy

    Science.gov (United States)

    Cheng, F. J.; Lee, Y. C.; Hu, S. Y.; Lin, Y. C.; Tiong, K. K.; Chou, W. C.

    2016-05-01

    In this work, the carrier dynamics in Zn1-xCdxO thin films with different Cd contents grown by molecular beam epitaxy system have been investigated using photoluminescence and time-resolved photoluminescence measurements. The carrier lifetime can be estimated from the PL decay curve fitted by triple exponential function. The emission energy dependence and temperature dependence of the PL decay time indicate that carrier localization dominate the luminescence mechanism of the ZnCdO alloy semiconductor.

  14. Drought Stress Effects on Water Relations of Rice Grown in Nutrient Film Technique

    OpenAIRE

    K. P. Halder; S. W Burrage

    2003-01-01

    Rice plants grown in nutrient film technique (NFT) to evaluate the effect of intermittent water stress on water relations, transpiration rate and leaf temperature. It was observed that the total water uptake by the plant, leaf relative water content (RWC), leaf water potential and rate of transpiration were decreased with increasing water stress. The transpiration rate was also decreased with increasing water stress but the leaf temperature increased. There was a positive correlation between ...

  15. In situ-grown hexagonal silicon nanocrystals in silicon carbide-based films

    OpenAIRE

    Kim, Tae-Youb; Huh, Chul; Park, Nae-Man; Choi, Cheol-Jong; Suemitsu, Maki

    2012-01-01

    Silicon nanocrystals (Si-NCs) were grown in situ in carbide-based film using a plasma-enhanced chemical vapor deposition method. High-resolution transmission electron microscopy indicates that these nanocrystallites were embedded in an amorphous silicon carbide-based matrix. Electron diffraction pattern analyses revealed that the crystallites have a hexagonal-wurtzite silicon phase structure. The peak position of the photoluminescence can be controlled within a wavelength of 500 to 650 nm by ...

  16. Auger and photoluminescence analysis of ZnO nanowires grown on AlN thin film

    Energy Technology Data Exchange (ETDEWEB)

    Yousefi, Ramin, E-mail: yousefi.ramin@gmail.com [Solid State Laboratory, Department of Physics, University of Malaya, 50603 Kuala Lumpur (Malaysia); Kamaluddin, Burhanuddin [Solid State Laboratory, Department of Physics, University of Malaya, 50603 Kuala Lumpur (Malaysia); Ghoranneviss, Mahmood; Hajakbari, Fatemeh [Plasma Physics Research Center, Science and Research Campus, Islamic Azad University, 14665-678 Tehran (Iran, Islamic Republic of)

    2009-05-15

    ZnO nanowires were grown on AlN thin film deposited on the glass substrates using a physical vapor deposition method in a conventional tube furnace without introducing any catalysts. The temperature of the substrates was maintained between 500 and 600 deg. C during the growth process. The typical average diameters of the obtained nanowires on substrate at 600 and 500 deg. C were about 57 and 22 nm respectively with several micrometers in length. X-ray diffraction and Auger spectroscopy results showed Al diffused from AlN thin film into the ZnO nanowires for the sample grown at 600 deg. C. Photoluminescence of the nanowires exhibits appearance of two emission bands, one related to ultraviolet emission with a strong peak at 380-382 nm, and the other related to deep level emission with a weak peak at 503-505 nm. The ultraviolet peak of the nanowires grown at 500 deg. C was blue shifted by 2 nm compared to those grown at 600 deg. C. This shift could be attributed to surface effect.

  17. Superconductive niobium films coating carbon nanotube fibers

    Science.gov (United States)

    Salvato, M.; Lucci, M.; Ottaviani, I.; Cirillo, M.; Behabtu, N.; Young, C. C.; Pasquali, M.; Vecchione, A.; Fittipaldi, R.; Corato, V.

    2014-11-01

    Superconducting niobium (Nb) has been successfully obtained by sputter deposition on carbon nanotube fibers. The transport properties of the niobium coating the fibers are compared to those of niobium thin films deposited on oxidized Si substrates during the same deposition run. For niobium films with thicknesses above 300 nm, the niobium coating the fibers and the thin films show similar normal state and superconducting properties with critical current density, measured at T = 4.2 K, of the order of 105 A cm-2. Thinner niobium layers coating the fibers also show the onset of the superconducting transition in the resistivity versus temperature dependence, but zero resistance is not observed down to T = 1 K. We evidence by scanning electron microscopy (SEM) and current-voltage measurements that the granular structure of the samples is the main reason for the lack of true global superconductivity for thicknesses below 300 nm.

  18. Superconductive niobium films coating carbon nanotube fibers

    International Nuclear Information System (INIS)

    Superconducting niobium (Nb) has been successfully obtained by sputter deposition on carbon nanotube fibers. The transport properties of the niobium coating the fibers are compared to those of niobium thin films deposited on oxidized Si substrates during the same deposition run. For niobium films with thicknesses above 300 nm, the niobium coating the fibers and the thin films show similar normal state and superconducting properties with critical current density, measured at T = 4.2 K, of the order of 105 A cm−2. Thinner niobium layers coating the fibers also show the onset of the superconducting transition in the resistivity versus temperature dependence, but zero resistance is not observed down to T = 1 K. We evidence by scanning electron microscopy (SEM) and current-voltage measurements that the granular structure of the samples is the main reason for the lack of true global superconductivity for thicknesses below 300 nm. (paper)

  19. Characterization of interference thin films grown on stainless steel surface by alternate pulse current in a sulphochromic solution

    Directory of Open Access Journals (Sweden)

    Rosa Maria Rabelo Junqueira

    2008-12-01

    Full Text Available The aim of this work was to characterize thin interference films grown on the surface of AISI 304 stainless steel for decorative purposes. Films were grown in a sulphochromic solution at room temperature by an alternating pulse current method. The morphology and chemical state of the elements in the films were investigated by field emission scanning electron microscopy (FESEM, atomic force microscopy (AFM, glow discharge optical emission spectrometry (GDOES, and infrared Fourier transform spectroscopy (FTIR. Depth-sensing indentation (DSI experiments and wear abrasion tests were employed to assess the mechanical resistance of the films. The coloration process resulted in porous thin films which increased the surface roughness of the substrate. The interference films mainly consisted of hydrated chromium oxide containing iron. Increasing film thickness produced different colors and affected the mechanical properties of the coating-substrate system. Thicker films, such as those producing gold and green colors, were softer but more abrasion resistant.

  20. Electronic structure of dysprosium silicide films grown on a Si(1 1 1) surface

    International Nuclear Information System (INIS)

    The thickness-dependent electronic structures of Dy silicide films grown on a Si(1 1 1) surface have been investigated by angle-resolved photoelectron spectroscopy. Two (1x1) periodic bands, both of them cross the Fermi level, have been observed in the silicide films formed by Dy coverages of 1.0 monolayer and below, and more than five (√(3)x√(3)) periodic bands have been observed in thicker films. Taking the (2√(3)x2√(3)) periodic structure of Dy atoms in the submonolayer silicide film into account, the periodicity of the two metallic bands indicate that they mainly originate from the orbitals of Si atoms, which form a (1x1) structure. Of the (√(3)x√(3)) periodic bands observed in thick films, four of them are well explained by the folding of the (1x1) bands into a (√(3)x√(3)) periodicity. Regarding the other band, the three (√(3)x√(3)) periodic bands would originate from the electronic states related to the inner Si layers that form a (√(3)x√(3)) structure, and the one observed in the 3.0 ML film only might originate from the electron located at the interface between bulk Si and the Dy silicide film.

  1. Photoinduced Br Desorption from CsBr Thin Films Grown on Cu(100)

    Energy Technology Data Exchange (ETDEWEB)

    Halliday, Matthew T.; Joly, Alan G.; Hess, Wayne P.; Shluger, AL

    2015-10-22

    Thin films of CsBr deposited onto metals such as copper are potential photocathode materials for light sources and other applications. We investigate desorption dynamics of Br atoms from CsBr films grown on insulator (KBr, LiF) and metal (Cu) substrates induced by sub-bandgap 6.4 eV laser pulses. The experimental results demonstrate that the peak kinetic energy of Br atoms desorbed from CsBr/Cu films is much lower than that for the hyperthermal desorption from CsBr/LiF films. Kelvin probe measurements indicate negative charge at the surface following Br desorption from CsBr/Cu films. Our ab initio calculations of excitons at CsBr surfaces demonstrate that this behavior can be explained by an exciton model of desorption including electron trapping at the CsBr surface. Trapped negative charges reduce the energy of surface excitons available for Br desorption. We examine the electron-trapping characteristics of low-coordinated sites at the surface, in particular, divacancies and kink sites. We also provide a model of cation desorption caused by Franck-Hertz excitation of F centers at the surface in the course of irradiation of CsBr/Cu films. These results provide new insights into the mechanisms of photoinduced structural evolution of alkali halide films on metal substrates and activation of metal photocathodes coated with CsBr.

  2. Thin film phosphor materials for future display devices: rare earth doped thin film phosphor grown by reactive evaporation method

    International Nuclear Information System (INIS)

    A reactive evaporation system consisting of an electron-beam, a resistive heater, a lamp heater and a gas source was built. Transparent rare earth (RE) doped phosphor thin films have been grown using this system. RE metal were vaporized by electron-beam bombardment and were allowed to react with O2 gas to obtained oxide-based films and SO2 gas to obtain oxysulfide based films. RE dopant was simultaneously supplied from a resistive heated boat containing (RE)Cl3 powder. Photoluminescence together with XRD results show that the samples were crystallized and suggest that the RE3+ ions substitute the cations in the host lattices and form good luminescence centers. (Author)

  3. Carrier transport in undoped CdO films grown by atmospheric-pressure chemical vapor deposition

    International Nuclear Information System (INIS)

    Temperature dependent Hall effect measurements were performed for the undoped CdO films with carrier concentrations (n) ranging from 2.4 × 1019 to 2.0 × 1020 cm−3 grown on c- and r-plane sapphire substrates by the atmospheric-pressure chemical vapor deposition using Cd powder and H2O as source materials. The n dependence of the optical gap energy (Eopt) could be explained by the combination of the band gap widening due to Burstein–Moss shift and the band gap shrinkages due to the electron–electron and electron–impurity interactions. For all the films, the carrier concentrations (n) were independent of measurement temperature (T), indicating that these films were n-type degenerate semiconductors. The barrier heights at grain boundaries determined from the 1000/T-ln(μT) curves were smaller than the thermal energy at 300 K, suggesting that the grain boundary scattering plays a minor role on the carrier transport in comparison with the intra-grain scattering. The n dependence of the gradient of the μ–T curve revealed the continuous transformation of the dominant intra-grain scattering mechanism from the phonon scattering to the ionized impurity scattering with increasing n. - Highlights: • Undoped CdO films were grown on c- and r-plane sapphire substrates by CVD. • Hall effect measurements were performed for the CdO films at 83–343 K. • For many CdO films, the carrier concentration n was independent of temperature. • The grain boundary scattering plays a minor role in the CdO films. • The dominant intra-grain scattering exhibited the continuous change with n

  4. Low-temperature grown graphene films by using molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Meng-Yu [Institute of Electronics, National Taiwan University, Taipei, Taiwan (China); Research Center for Applied Sciences, Academia Sinica, Nankang, Taipei, Taiwan (China); Guo, Wei-Ching; Wang, Pro-Yao [Institute of Optoelectronic Sciences, National Taiwan Ocean University, Keelung, Taiwan (China); Wu, Meng-Hsun [College of Photonics, National Chiao-Tung University, Tainan, Taiwan (China); Liu, Te-Huan; Chang, Chien-Cheng [Institute of Applied Mechanics, National Taiwan University, Taipei, Taiwan (China); Pao, Chun-Wei; Lin, Shih-Yen [Research Center for Applied Sciences, Academia Sinica, Nankang, Taipei, Taiwan (China); Lee, Si-Chen [Institute of Electronics, National Taiwan University, Taipei, Taiwan (China)

    2012-11-26

    Complete graphene film is prepared by depositing carbon atoms directly on Cu foils in a molecular beam epitaxy chamber at 300 Degree-Sign C. The Raman spectrum of the film has indicated that high-quality few-layer graphene is obtained. With back-gated transistor architecture, the characteristic current modulation of graphene transistors is observed. Following the similar growth procedure, graphitization is observed at room temperature, which is consistent with the molecular dynamics simulations of graphene growth.

  5. Ultrathin films of YBaCuO grown on YSZ substrates with a new buffer layer Nd-Cu-O

    OpenAIRE

    Chui, TC; Tang, WH; Gao, J.

    1999-01-01

    YSZ is one of the most widely used substrates to grow oxide superconducting thin films. However, the large lattice mismatch and occurrence of intermediate layer often degrade the quality of grown films. We used a new buffer material, neodymium copper oxide (Nd2 CuO4), to improve the quality of YBCO ultrathin films grown on YSZ. Good superconducting transitions have been obtained on these films with thickness 10-12 nanometers. Such a Nd2CuO 4 layer has a stable crystal structure and behaves as...

  6. Characterization of Carbon Nanotubes Grown by Chemical Vapor Deposition

    Science.gov (United States)

    Cochrane, J. C.; Zhu, Shen; Su, Ching-Hua; Lehoczky, S. L.; Rose, M. Franklin (Technical Monitor)

    2001-01-01

    Since the superior properties of multi-wall carbon nanotubes (MWCNT) could improve numerous devices such as electronics and sensors, many efforts have been made in investigating the growth mechanism of MWCNT to synthesize high quality MWCNT. Chemical vapor deposition (CVD) is widely used for MWCNT synthesis, and scanning electron microscopy (SEM) and energy dispersive x-ray spectroscopy (EDS) are useful methods for analyzing the structure, morphology and composition of MWCNT. Temperature and pressure are two important growth parameters for fabricating carbon nanotubes. In MWCNT growth by CVD, the plasma assisted method is normally used for low temperature growth. However a high temperature environment is required for thermal CVD. A systematic study of temperature and pressure-dependence is very helpful to understanding MWCNT growth. Transition metal particles are commonly used as catalysis in carbon nanotube growth. It is also interesting to know how temperature and pressure affect the interface of carbon species and catalyst particles

  7. X-ray photoelectron spectroscopy study of the growth kinetics of biomimetically grown hydroxyapatite thin-film coatings

    Science.gov (United States)

    McLeod, K.; Kumar, S.; Dutta, N. K.; Smart, R. St. C.; Voelcker, N. H.; Anderson, G. I.

    2010-09-01

    Hydroxyapatite (HA) thin-film coatings grown biomimetically using simulated body fluid (SBF) are desirable for a range of applications such as improved fixation of fine- and complex-shaped orthopedic and dental implants, tissue engineering scaffolds and localized and sustained drug delivery. There is a dearth of knowledge on two key aspects of SBF-grown HA coatings: (i) the growth kinetics over short deposition periods, hours rather than weeks; and (ii) possible difference between the coatings deposited with and without periodic SBF replenishment. A study centred on these aspects is reported. X-ray photoelectron spectroscopy (XPS) has been used to study the growth kinetics of SBF-grown HA coatings for deposition periods ranging from 0.5 h to 21 days. The coatings were deposited with and without periodic replenishment of SBF. The XPS studies revealed that: (i) a continuous, stable HA coating fully covered the titanium substrate after a growth period of 13 h without SBF replenishment; (ii) thicker HA coatings about 1 μm in thickness resulted after a growth period of 21 days, both with and without SBF replenishment; and (iii) the Ca/P ratio at the surface of the HA coating was significantly lower than that in its bulk. No significant difference between HA grown with and without periodic replenishment of SBF was found. The coatings were determined to be carbonated, a characteristic desirable for improved implant fixation. The atomic force and scanning electron microscopies results suggested that heterogeneous nucleation and growth are the primary deposition mode for these coatings. Primary osteoblast cell studies demonstrated the biocompatibility of these coatings, i.e., osteoblast colony coverage of approximately 80%, similar to the control substrate (tissue culture polystyrene).

  8. X-ray photoelectron spectroscopy study of the growth kinetics of biomimetically grown hydroxyapatite thin-film coatings

    International Nuclear Information System (INIS)

    Hydroxyapatite (HA) thin-film coatings grown biomimetically using simulated body fluid (SBF) are desirable for a range of applications such as improved fixation of fine- and complex-shaped orthopedic and dental implants, tissue engineering scaffolds and localized and sustained drug delivery. There is a dearth of knowledge on two key aspects of SBF-grown HA coatings: (i) the growth kinetics over short deposition periods, hours rather than weeks; and (ii) possible difference between the coatings deposited with and without periodic SBF replenishment. A study centred on these aspects is reported. X-ray photoelectron spectroscopy (XPS) has been used to study the growth kinetics of SBF-grown HA coatings for deposition periods ranging from 0.5 h to 21 days. The coatings were deposited with and without periodic replenishment of SBF. The XPS studies revealed that: (i) a continuous, stable HA coating fully covered the titanium substrate after a growth period of 13 h without SBF replenishment; (ii) thicker HA coatings about 1 μm in thickness resulted after a growth period of 21 days, both with and without SBF replenishment; and (iii) the Ca/P ratio at the surface of the HA coating was significantly lower than that in its bulk. No significant difference between HA grown with and without periodic replenishment of SBF was found. The coatings were determined to be carbonated, a characteristic desirable for improved implant fixation. The atomic force and scanning electron microscopies results suggested that heterogeneous nucleation and growth are the primary deposition mode for these coatings. Primary osteoblast cell studies demonstrated the biocompatibility of these coatings, i.e., osteoblast colony coverage of approximately 80%, similar to the control substrate (tissue culture polystyrene).

  9. X-ray photoelectron spectroscopy study of the growth kinetics of biomimetically grown hydroxyapatite thin-film coatings

    Energy Technology Data Exchange (ETDEWEB)

    McLeod, K. [Ian Wark Research Institute, University of South Australia, Mawson Lakes, SA 5095 (Australia); Kumar, S., E-mail: sunil.kumar@unisa.edu.au [Ian Wark Research Institute, University of South Australia, Mawson Lakes, SA 5095 (Australia); Dutta, N.K. [Ian Wark Research Institute, University of South Australia, Mawson Lakes, SA 5095 (Australia); Smart, R.St.C. [Applied Centre for Structural and Synchrotron Studies, University of South Australia, Mawson Lakes, SA 5095 (Australia); Voelcker, N.H. [School of Chemistry, Physics and Earth Sciences, Flinders University of South Australia, GPO Box 2100, Adelaide 5001 (Australia); Anderson, G.I. [School of Veterinary Science, University of Adelaide, Adelaide, SA 5005 (Australia)

    2010-09-15

    Hydroxyapatite (HA) thin-film coatings grown biomimetically using simulated body fluid (SBF) are desirable for a range of applications such as improved fixation of fine- and complex-shaped orthopedic and dental implants, tissue engineering scaffolds and localized and sustained drug delivery. There is a dearth of knowledge on two key aspects of SBF-grown HA coatings: (i) the growth kinetics over short deposition periods, hours rather than weeks; and (ii) possible difference between the coatings deposited with and without periodic SBF replenishment. A study centred on these aspects is reported. X-ray photoelectron spectroscopy (XPS) has been used to study the growth kinetics of SBF-grown HA coatings for deposition periods ranging from 0.5 h to 21 days. The coatings were deposited with and without periodic replenishment of SBF. The XPS studies revealed that: (i) a continuous, stable HA coating fully covered the titanium substrate after a growth period of 13 h without SBF replenishment; (ii) thicker HA coatings about 1 {mu}m in thickness resulted after a growth period of 21 days, both with and without SBF replenishment; and (iii) the Ca/P ratio at the surface of the HA coating was significantly lower than that in its bulk. No significant difference between HA grown with and without periodic replenishment of SBF was found. The coatings were determined to be carbonated, a characteristic desirable for improved implant fixation. The atomic force and scanning electron microscopies results suggested that heterogeneous nucleation and growth are the primary deposition mode for these coatings. Primary osteoblast cell studies demonstrated the biocompatibility of these coatings, i.e., osteoblast colony coverage of approximately 80%, similar to the control substrate (tissue culture polystyrene).

  10. Semiconductor-insulator transition in VO2 (B) thin films grown by pulsed laser deposition

    International Nuclear Information System (INIS)

    Thin films of B-phase VO2 were grown by pulsed-laser deposition on glass and (100)-cut MgO substrates in a temperature range from 375 to 425 °C and at higher gas pressures than usual for this technique. The films were strongly oriented, with ab-planes parallel to the substrate surface. Detailed study of surface morphology through Atomic Force Microscopy images suggest significant differences in evolution as a function of growth temperature for films on the two types of substrates. Measurements of electrical conductivities through cooling-heating cycles from room temperature to 120 K showed changes of five orders of magnitude, with steeper changes between room temperature and ∼150 K, which corresponds with the extended and reversible phase transition known to occur for this material. At lower temperatures conductivities exhibited Arrhenius behavior, indicating that no further structural change was occurring and that conduction is thermally activated. In this lower temperature range, conductivity of the samples can be described by the near-neighbor hopping model. No hysteresis was found between the cooling and heating braches of the cycles, which is at variance with previous results published for VO2 (B). This apparent lack of hysteresis for thin films grown in the manner described and the large conductivity variation as a function of temperature observed for the samples suggests this material could be of interest for infrared sensing applications

  11. Bismuth onion thin film in situ grown on silicon wafer synthesized through a hydrothermal approach

    International Nuclear Information System (INIS)

    Bismuth onion structured nanospheres with the same structure as carbon onions have been synthesized and observed. The nanospheres were synthesized through a hydrothermal method using bismuth hydroxide and silicon wafer as reactants. By controlling the heating temperature, heating time, and the pressure, nanoscale bismuth spheres can be in situ synthesized on silicon wafer, and forms a bismuth onion film on the substrate. The electronic property of the films was investigated. A formation mechanism of the formation of bismuth onions and the onion film has been proposed on the basis of experimental observations.

  12. Biomolecular papain thin films grown by matrix assisted and conventional pulsed laser deposition: A comparative study

    Science.gov (United States)

    György, E.; Pérez del Pino, A.; Sauthier, G.; Figueras, A.

    2009-12-01

    Biomolecular papain thin films were grown both by matrix assisted pulsed laser evaporation (MAPLE) and conventional pulsed laser deposition (PLD) techniques with the aid of an UV KrF∗ (λ =248 nm, τFWHM≅20 ns) excimer laser source. For the MAPLE experiments the targets submitted to laser radiation consisted on frozen composites obtained by dissolving the biomaterial powder in distilled water at 10 wt % concentration. Conventional pressed biomaterial powder targets were used in the PLD experiments. The surface morphology of the obtained thin films was studied by atomic force microscopy and their structure and composition were investigated by Fourier transform infrared spectroscopy. The possible physical mechanisms implied in the ablation processes of the two techniques, under comparable experimental conditions were identified. The results showed that the growth mode, surface morphology as well as structure of the deposited biomaterial thin films are determined both by the incident laser fluence value as well as target preparation procedure.

  13. Molecular-Beam Epitaxially Grown MgB2 Thin Films and Superconducting Tunnel Junctions

    International Nuclear Information System (INIS)

    Since the discovery of its superconducting properties in 2001, magnesium diboride has generated terrific scientific and engineering research interest around the world. With a TC of 39K and two superconducting gaps, MgB2 has great promise from the fundamental point of view, as well as immediate applications. Several techniques for thin film deposition and heterojunction formation have been established, each with its own advantages and drawbacks. Here, we will present a brief overview of research based on MgB2 thin films grown by molecular beam epitaxy coevaporation of Mg and B. The films are smooth and highly crystalline, and the technique allows for virtually any heterostructure to be formed, including all-MgB2 tunnel junctions. Such devices have been characterized, with both quasiparticle and Josephson tunneling reported. MgB2 remains a material of great potential for a multitude of further characterization and exploration research projects and applications.

  14. Raman spectroscopy of ZnMnO thin films grown by pulsed laser deposition

    Science.gov (United States)

    Orozco, S.; Riascos, H.; Duque, S.

    2016-02-01

    ZnMnO thin films were grown by Pulsed Laser Deposition (PLD) technique onto Silicon (100) substrates at different growth conditions. Thin films were deposited varying Mn concentration, substrate temperature and oxygen pressure. ZnMnO samples were analysed by using Raman Spectroscopy that shows a red shift for all vibration modes. Raman spectra revealed that nanostructure of thin films was the same of ZnO bulk, wurzite hexagonal structure. The structural disorder was manifested in the line width and shape variations of E2(high) and E2(low) modes located in 99 and 434cm-1 respectively, which may be due to the incorporation of Mn ions inside the ZnO crystal lattice. Around 570cm-1 was found a peak associated to E1(LO) vibration mode of ZnO. 272cm-1 suggest intrinsic host lattice defects. Additional mode centred at about 520cm-1 can be overlap of Si and Mn modes.

  15. Quantitative assessment of molecular dynamics-grown amorphous silicon and germanium films on silicon (111)

    Science.gov (United States)

    Käshammer, Peter; Borgardt, Nikolai I.; Seibt, Michael; Sinno, Talid

    2016-09-01

    Molecular dynamics based on the empirical Tersoff potential was used to simulate the deposition of amorphous silicon and germanium on silicon(111) at various deposition rates and temperatures. The resulting films were analyzed quantitatively by comparing one-dimensional atomic density profiles to experimental measurements. It is found that the simulations are able to capture well the structural features of the deposited films, which exhibit a gradual loss of crystalline order over several monolayers. A simple mechanistic model is used to demonstrate that the simulation temperature may be used to effectively accelerate the surface relaxation processes during deposition, leading to films that are consistent with experimental samples grown at deposition rates many orders-of-magnitude slower than possible in a molecular dynamics simulation.

  16. Electrical and optical properties of ZnO films grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Zinc oxide (ZnO) films have been grown on sapphire by molecular beam epitaxy (MBE), and it is found that the grain size of the ZnO films increased with increasing the growth temperature. Photoluminescence (PL) study shows that the intensity ratio of near-band-edge emission to deep-level-related emission (NBE/DL) of the ZnO is significantly enhanced with increasing the growth temperature, and the dependence of the carrier mobility on the growth temperature shows very similar trend, which implies that there is a community factor that determines the optical and electrical properties of ZnO, and this factor is suggested to be the grain boundary. The results obtained in this paper reveal that by reducing the grain boundaries, ZnO films with high optical and electrical properties may be acquired.

  17. Preparation and chemical characterization of neodymium-doped molybdenum oxide films grown using spray pyrolysis

    International Nuclear Information System (INIS)

    We studied the crystalline, morphology, and surface composition of Nd-doped molybdenum oxide films grown on glass slides through spray pyrolysis. After fabrication, the films were subjected to thermal treatment in oxygen for periods ranging from 2 to 20 hours. The films were structurally characterized though X-ray diffraction (XRD), their bulk chemical composition was determined using Energy-Dispersive X-ray analysis (EDX), and their surface composition was determined using X-ray Photoelectron Spectroscopy (XP S). The XRD results show that the films obtained from different dissolution volumes and at substrate temperature of 300 grades C exhibit the characteristics of the oxygen-deficient molybdenum trioxide Mo9O26 phase. The films subjected to different thermal treatments exhibit a mixture of Mo9O26 and Mo17O47 phases. EDX study shows the energy belonging to the L line of Nd. Finally, films doped with Nd and subjected to a thermal treatment of 20 h were analyzed through XP S, showing the binding energies at the crystalline lattice correspond to Nd2 (MoO4)3 and Nd2Mo2O7. (Author)

  18. Polycrystalline GaSb thin films grown by co-evaporation

    Institute of Scientific and Technical Information of China (English)

    Qiao Zaixiang; Sun Yun; He Weiyu; He Qing; Li Changjian

    2009-01-01

    We report optical and electrical properties of polycrystalline GaSb thin films which were successfully grown by co-evaporation on soda-lime glass substrates. The thin films have preferential orientation of the (111)direction. SEM results indicate that the average grain size of GaSb thin film is 500 nm with the substrate temperature of 560 ℃. The average reflectance of GaSb thin film is about 30% and the absorption coefficient is of the order of 104 cm-1. The optical bandgap of GaSb thin film is 0.726 eV. The hole concentration shows a clear increasing trend as the Ga-evaporation-temperature/Sb-evaporation-temperature (TGa/TSb) ratio increases. When the Ga crucible temperature is 810 ℃ and the antinomy crucible temperature is 415 ℃, the hole concentration of polycrystalline GaSb is 2 x 1017 cm-3 and the hole mobility is 130 cm2/(V-s). These results suggest that polycrystalline GaSb thin film is a good candidate for the use as a cheap material in TPV cells.

  19. Positron beam and RBS studies of thermally grown oxide films on stainless steel grade 304

    International Nuclear Information System (INIS)

    Highlights: • Using slow positron beam the S parameter profiles for samples oxidized in different atmospheres and times are shown. • The multi-layered character of oxide films is confirmed. • Characterization of the kind of layers and time evolution are proposed. • The thicknesses of oxide films are found. • The time dependencies of thermally grown oxides are presented. - Abstract: The formation of oxide films on surfaces of stainless steel 304 AISI annealed at 800 °C in vacuum, air and in flow N2 atmospheres was studied using variable energy positron beam technique (VEP) and Rutherford backscattering/nuclear reaction (RBS/NR) methods. In frame of these studies, Doppler broadening of annihilation line (DB) measurements were performed. For a sample heated in vacuum the oxide film ca. 8 nm is observed. For specimens oxidized in air and N2 the multi-layered oxide films of about a few hundred nanometers are recognized. The RBS/NR measurements have shown that the sample annealed in vacuum contains a lower quantity of oxygen while for samples heated in the air and N2 non-linear and rather linear time-dependency are observed, respectively. The thicknesses of total oxide films obtained from RBS/NR tests are in good agreement with the VEP results. Time evolution of the oxide growing was studied as well

  20. Magnetism of ultrathin Pd99Fe01 films grown on niobium

    International Nuclear Information System (INIS)

    Magnetic properties of ultrathin Pd99Fe01 films grown on niobium films are investigated by magneto-optic visualization, SQUID magnetometry, and Hall-voltage measurements in the temperature range from 3 to 40 K. We show that the films are ferromagnetic at thickness larger than 10 nm. The Curie temperature TC varies from 2 to 40 K with increase of film thickness to 80 nm. The value of spontaneous magnetization of the Pd99Fe01 depends on the PdFe film thickness. The estimated spin polarization is about 4 μB per Fe ion, which corresponds to the polarization of the Pd3Fe compound. In contrast to the homogenous bulk material, Pd99Fe01 films consist of ferromagnetic nano-clusters in a paramagnetic host, which is confirmed by characteristic features of the magnetization loops and by the increase of critical current density in the adjacent Nb layer. The size of the clusters is estimated as 10 nm, which is in agreement with the 30% increase of the supercurrent observed in the Nb. (paper)

  1. Single-crystalline BaTiO3 films grown by gas-source molecular beam epitaxy

    Science.gov (United States)

    Matsubara, Yuya; Takahashi, Kei S.; Tokura, Yoshinori; Kawasaki, Masashi

    2014-12-01

    Thin BaTiO3 films were grown on GdScO3 (110) substrates by metalorganic gas-source molecular beam epitaxy. Titanium tetra-isopropoxide (TTIP) was used as a volatile precursor that provides a wide growth window of the supplied TTIP/Ba ratio for automatic adjustment of the film composition. Within the growth window, compressively strained films can be grown with excellent crystalline quality, whereas films grown outside of the growth window are relaxed with inferior crystallinity. This growth method will provide a way to study the intrinsic properties of ferroelectric BaTiO3 films and their heterostructures by precise control of the stoichiometry, structure, and purity.

  2. Source Molecular Effect on Amorphous Carbon Film Deposition

    OpenAIRE

    Kawazoe, Hiroki; Inayoshi, Takanori; Shinohara, Masanori; Matsuda, Yoshinobu; Fujiyama, Hiroshi; Nitta, Yuki; Nakatani, Tatsuyuki

    2009-01-01

    We investigated deposition process of amorphous carbon films using acetylene and methane as a source molecule, by using infrared spectroscopy in multiple internal reflection geometry (MIR-IRAS). We found that deposited film structures were different due to source molecules.

  3. Electronic structure analysis of GaN films grown on r- and a-plane sapphire

    International Nuclear Information System (INIS)

    Graphical abstract: Substrate orientation induced changes in surface chemistry, band bending, hybridization states, electronic properties and surface morphology of epitaxially grown GaN were investigated via photoemission spectroscopic and Atomic Force Microscopic measurements. - Highlights: • Electronic structure and surface properties of GaN film grown on r/a-plane sapphire. • Downward band bending (0.5 eV) and high surface oxide is observed for GaN/a-sapphire. • Electron affinity and ionization energy is found to be higher for GaN/a-sapphire. - Abstract: The electronic structure and surface properties of epitaxial GaN films grown on r- and a-plane sapphire substrates were probed via spectroscopic and microscopic measurements. X-ray photoemission spectroscopic (XPS) measurements were performed to analyse the surface chemistry, band bending and valence band hybridization states. It was observed that GaN/a-sapphire display a downward band bending of 0.5 eV and possess higher amount of surface oxide compared to GaN/r-sapphire. The valence band (VB) investigation revealed that the hybridization corresponds to the interactions of Ga 4s and Ga 4p orbitals with N 2p orbital, and result in N2p–Ga4p, N2p–Ga4s∗, mixed and N2p–Ga4s states. The energy band structure and electronic properties were measured via ultraviolet photoemission spectroscopic (UPS) experiments. The band structure analysis and electronic properties calculations divulged that the electron affinity and ionization energy of GaN/a-sapphire were 0.3 eV higher than GaN/r-sapphire film. Atomic Force Microscopic (AFM) measurements revealed faceted morphology of GaN/r-sapphire while a smooth pitted surface was observed for GaN/a-sapphire film, which is closely related to surface oxide coverage

  4. Electronic structure analysis of GaN films grown on r- and a-plane sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Mishra, Monu; Krishna TC, Shibin; Aggarwal, Neha [Physics of Energy Harvesting Division, CSIR-National Physical Laboratory (CSIR-NPL), Dr. K.S. Krishnan Marg, New Delhi 110012 (India); Academy of Scientific and Innovative Research (AcSIR), CSIR-NPL Campus, Dr. K.S. Krishnan Marg, New Delhi 110012 (India); Vihari, Saket [Physics of Energy Harvesting Division, CSIR-National Physical Laboratory (CSIR-NPL), Dr. K.S. Krishnan Marg, New Delhi 110012 (India); Gupta, Govind, E-mail: govind@nplindia.org [Physics of Energy Harvesting Division, CSIR-National Physical Laboratory (CSIR-NPL), Dr. K.S. Krishnan Marg, New Delhi 110012 (India); Academy of Scientific and Innovative Research (AcSIR), CSIR-NPL Campus, Dr. K.S. Krishnan Marg, New Delhi 110012 (India)

    2015-10-05

    Graphical abstract: Substrate orientation induced changes in surface chemistry, band bending, hybridization states, electronic properties and surface morphology of epitaxially grown GaN were investigated via photoemission spectroscopic and Atomic Force Microscopic measurements. - Highlights: • Electronic structure and surface properties of GaN film grown on r/a-plane sapphire. • Downward band bending (0.5 eV) and high surface oxide is observed for GaN/a-sapphire. • Electron affinity and ionization energy is found to be higher for GaN/a-sapphire. - Abstract: The electronic structure and surface properties of epitaxial GaN films grown on r- and a-plane sapphire substrates were probed via spectroscopic and microscopic measurements. X-ray photoemission spectroscopic (XPS) measurements were performed to analyse the surface chemistry, band bending and valence band hybridization states. It was observed that GaN/a-sapphire display a downward band bending of 0.5 eV and possess higher amount of surface oxide compared to GaN/r-sapphire. The valence band (VB) investigation revealed that the hybridization corresponds to the interactions of Ga 4s and Ga 4p orbitals with N 2p orbital, and result in N2p–Ga4p, N2p–Ga4s{sup ∗}, mixed and N2p–Ga4s states. The energy band structure and electronic properties were measured via ultraviolet photoemission spectroscopic (UPS) experiments. The band structure analysis and electronic properties calculations divulged that the electron affinity and ionization energy of GaN/a-sapphire were 0.3 eV higher than GaN/r-sapphire film. Atomic Force Microscopic (AFM) measurements revealed faceted morphology of GaN/r-sapphire while a smooth pitted surface was observed for GaN/a-sapphire film, which is closely related to surface oxide coverage.

  5. Detection of Carbon Monoxide Using Polymer-Carbon Composite Films

    Science.gov (United States)

    Homer, Margie L.; Ryan, Margaret A.; Lara, Liana M.

    2011-01-01

    A carbon monoxide (CO) sensor was developed that can be incorporated into an existing sensing array architecture. The CO sensor is a low-power chemiresistor that operates at room temperature, and the sensor fabrication techniques are compatible with ceramic substrates. Sensors made from four different polymers were tested: poly (4-vinylpryridine), ethylene-propylene-diene-terpolymer, polyepichlorohydrin, and polyethylene oxide (PEO). The carbon black used for the composite films was Black Pearls 2000, a furnace black made by the Cabot Corporation. Polymers and carbon black were used as received. In fact, only two of these sensors showed a good response to CO. The poly (4-vinylpryridine) sensor is noisy, but it does respond to the CO above 200 ppm. The polyepichlorohydrin sensor is less noisy and shows good response down to 100 ppm.

  6. Nonhomogeneous morphology and the elastic modulus of aligned carbon nanotube films

    International Nuclear Information System (INIS)

    Carbon nanotube (CNT) arrays offer the potential to develop nanostructured materials that leverage their outstanding physical properties. Vertically aligned carbon nanotubes (VACNTs), also named CNT forests, CNT arrays, or CNT turfs, can provide high heat conductivity and sufficient mechanical compliance to accommodate thermal expansion mismatch for use as thermal interface materials (TIMs). This paper reports measurements of the in-plane moduli of vertically aligned, single-walled CNT (SWCNT) and multi-walled CNT (MWCNT) films. The mechanical response of these films is related to the nonhomogeneous morphology of the grown nanotubes, such as entangled nanotubes of a top crust layer, aligned CNTs in the middle region, and CNTs in the bottom layer. To investigate how the entanglements govern the overall mechanical moduli of CNT films, we remove the crust layer consisting of CNT entanglements by etching the CNT films from the top. A microfabricated cantilever technique shows that crust removal reduces the resulting moduli of the etched SWCNT films by as much as 40%, whereas the moduli of the etched MWCNT films do not change significantly, suggesting a minimal crust effect on the film modulus for thick MWCNT films (>90 μm). This improved understanding will allow us to engineer the mechanical moduli of CNT films for TIMs or packaging applications. (paper)

  7. Nonhomogeneous morphology and the elastic modulus of aligned carbon nanotube films

    Science.gov (United States)

    Won, Yoonjin; Gao, Yuan; Guzman de Villoria, Roberto; Wardle, Brian L.; Xiang, Rong; Maruyama, Shigeo; Kenny, Thomas W.; Goodson, Kenneth E.

    2015-11-01

    Carbon nanotube (CNT) arrays offer the potential to develop nanostructured materials that leverage their outstanding physical properties. Vertically aligned carbon nanotubes (VACNTs), also named CNT forests, CNT arrays, or CNT turfs, can provide high heat conductivity and sufficient mechanical compliance to accommodate thermal expansion mismatch for use as thermal interface materials (TIMs). This paper reports measurements of the in-plane moduli of vertically aligned, single-walled CNT (SWCNT) and multi-walled CNT (MWCNT) films. The mechanical response of these films is related to the nonhomogeneous morphology of the grown nanotubes, such as entangled nanotubes of a top crust layer, aligned CNTs in the middle region, and CNTs in the bottom layer. To investigate how the entanglements govern the overall mechanical moduli of CNT films, we remove the crust layer consisting of CNT entanglements by etching the CNT films from the top. A microfabricated cantilever technique shows that crust removal reduces the resulting moduli of the etched SWCNT films by as much as 40%, whereas the moduli of the etched MWCNT films do not change significantly, suggesting a minimal crust effect on the film modulus for thick MWCNT films (>90 μm). This improved understanding will allow us to engineer the mechanical moduli of CNT films for TIMs or packaging applications.

  8. A low-temperature synthesis of electrochemical active Pt nanoparticles and thin films by atomic layer deposition on Si(111) and glassy carbon surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Rui [Joint Center for Artificial Photosynthesis, California Institute of Technology, Pasadena, CA 91125 (United States); Han, Lihao [Joint Center for Artificial Photosynthesis, California Institute of Technology, Pasadena, CA 91125 (United States); Photovoltaic Materials and Devices (PVMD) Laboratory, Delft University of Technology, P.O. Box 5031, GA Delft 2600 (Netherlands); Huang, Zhuangqun; Ferrer, Ivonne M. [Joint Center for Artificial Photosynthesis, California Institute of Technology, Pasadena, CA 91125 (United States); Division of Chemistry and Chemical Engineering, California Institute of Technology, 210 Noyes Laboratory 127-72, Pasadena, CA 91125 (United States); Smets, Arno H.M.; Zeman, Miro [Photovoltaic Materials and Devices (PVMD) Laboratory, Delft University of Technology, P.O. Box 5031, GA Delft 2600 (Netherlands); Brunschwig, Bruce S., E-mail: bsb@caltech.edu [Beckman Institute, California Institute of Technology, Pasadena, CA 91125 (United States); Lewis, Nathan S., E-mail: nslewis@caltech.edu [Joint Center for Artificial Photosynthesis, California Institute of Technology, Pasadena, CA 91125 (United States); Beckman Institute, California Institute of Technology, Pasadena, CA 91125 (United States); Division of Chemistry and Chemical Engineering, California Institute of Technology, 210 Noyes Laboratory 127-72, Pasadena, CA 91125 (United States); Kavli Nanoscience Institute, California Institute of Technology, Pasadena, CA 91125 (United States)

    2015-07-01

    Atomic layer deposition (ALD) was used to deposit nanoparticles and thin films of Pt onto etched p-type Si(111) wafers and glassy carbon discs. Using precursors of MeCpPtMe{sub 3} and ozone and a temperature window of 200–300 °C, the growth rate was 80–110 pm/cycle. X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and scanning electron microscopy (SEM) were used to analyze the composition, structure, morphology, and thickness of the ALD-grown Pt nanoparticle films. The catalytic activity of the ALD-grown Pt for the hydrogen evolution reaction was shown to be equivalent to that of e-beam evaporated Pt on glassy carbon electrode. - Highlights: • Pure Pt films were grown by atomic layer deposition (ALD) using MeCpPtMe3 and ozone. • ALD-grown Pt thin films had high growth rates of 110 pm/cycle. • ALD-grown Pt films were electrocatalytic for hydrogen evolution from water. • Electrocatalytic activity of the ALD Pt films was equivalent to e-beam deposited Pt. • No carbon species were detected in the ALD-grown Pt films.

  9. A low-temperature synthesis of electrochemical active Pt nanoparticles and thin films by atomic layer deposition on Si(111) and glassy carbon surfaces

    International Nuclear Information System (INIS)

    Atomic layer deposition (ALD) was used to deposit nanoparticles and thin films of Pt onto etched p-type Si(111) wafers and glassy carbon discs. Using precursors of MeCpPtMe3 and ozone and a temperature window of 200–300 °C, the growth rate was 80–110 pm/cycle. X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and scanning electron microscopy (SEM) were used to analyze the composition, structure, morphology, and thickness of the ALD-grown Pt nanoparticle films. The catalytic activity of the ALD-grown Pt for the hydrogen evolution reaction was shown to be equivalent to that of e-beam evaporated Pt on glassy carbon electrode. - Highlights: • Pure Pt films were grown by atomic layer deposition (ALD) using MeCpPtMe3 and ozone. • ALD-grown Pt thin films had high growth rates of 110 pm/cycle. • ALD-grown Pt films were electrocatalytic for hydrogen evolution from water. • Electrocatalytic activity of the ALD Pt films was equivalent to e-beam deposited Pt. • No carbon species were detected in the ALD-grown Pt films

  10. Investigation of the Carbon Monoxide Gas Sensing Characteristics of Tin Oxide Mixed Cerium Oxide Thin Films

    Directory of Open Access Journals (Sweden)

    Muhammad B. Haider

    2012-02-01

    Full Text Available Thin films of tin oxide mixed cerium oxide were grown on unheated substrates by physical vapor deposition. The films were annealed in air at 500 °C for two hours, and were characterized using X-ray photoelectron spectroscopy, atomic force microscopy and optical spectrophotometry. X-ray photoelectron spectroscopy and atomic force microscopy results reveal that the films were highly porous and porosity of our films was found to be in the range of 11.6–21.7%. The films were investigated for the detection of carbon monoxide, and were found to be highly sensitive. We found that 430 °C was the optimum operating temperature for sensing CO gas at concentrations as low as 5 ppm. Our sensors exhibited fast response and recovery times of 26 s and 30 s, respectively.

  11. Novel platinum nanoparticles/vapor grown carbon fibers composite counter electrodes for high performance dye sensitized solar cells

    International Nuclear Information System (INIS)

    Highlights: • The Pt nanoparticles (PtNPs) are highly dispersed on vapor grown carbon fibers (VGCFs). • The power conversion efficiency of DSSCs depends substantially on the relative content of VGCFs to PtNPs. • Electrocatalytic activities of PtNPs/VGCFs are examined using impedance, cyclic voltammetry, and Tafel polarization techniques. • Moderate combination of PtNPs and VGCFs exhibits higher power conversion efficiency of DSSCs than that of PtNPs or VGCFs alone. - Abstract: A composite film composed of platinum nanoparticles (PtNPs) and vapor grown carbon fibers (VGCFs) was coated on FTO glass acted as a counter electrode (CE) for high performance dye-sensitized solar cell (DSSC) via a facially thermal approach. The PtNP/VGCF hybrid film was characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), thermogravimetry (TGA), X-ray diffraction (XRD), Raman, and X-ray photoelectroscopy (XPS). In addition, cyclic voltammetry (CV), Tafel polarization, and electrochemical impedance spectroscopy (EIS) were measured to correlate electrocatalytic activity to photovoltaic performance of DSSCs based on these PtNP/VGCF hybrid counter electrodes (CEs). Results indicated that PtNPs can enhance the thermal stability of VGCFs and were uniformly distributed over VGCFs with high porosity to provide large exposed surface area for redox reactions occurring within the films. VGCFs were found to benefit Pt reduction during annealing at 450 °C. A DSSC comprising the hybrid CE with a weight ratio of PtNPs to VGCFs of 3:7 (PV37) illustrated a higher solar-to-electricity efficiency of 7.77% in comparison to 7.31% for a conventional Pt CE or 3.79% for a pure VGCF CE. Electrochemical analyses demonstrated that PV37 CE featured the strongest electrocatalytic ability for the reduction of I3− to I− and the lowest Nernst diffusion resistance, confirming the highest power conversion efficiency among the samples evaluated

  12. Effect of Different Catalyst Deposition Technique on Aligned Multiwalled Carbon Nanotubes Grown by Thermal Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    Mohamed Shuaib Mohamed Saheed

    2014-01-01

    Full Text Available The paper reported the investigation of the substrate preparation technique involving deposition of iron catalyst by electron beam evaporation and ferrocene vaporization in order to produce vertically aligned multiwalled carbon nanotubes array needed for fabrication of tailored devices. Prior to the growth at 700°C in ethylene, silicon dioxide coated silicon substrate was prepared by depositing alumina followed by iron using two different methods as described earlier. Characterization analysis revealed that aligned multiwalled carbon nanotubes array of 107.9 µm thickness grown by thermal chemical vapor deposition technique can only be achieved for the sample with iron deposited using ferrocene vaporization. The thick layer of partially oxidized iron film can prevent the deactivation of catalyst and thus is able to sustain the growth. It also increases the rate of permeation of the hydrocarbon gas into the catalyst particles and prevents agglomeration at the growth temperature. Combination of alumina-iron layer provides an efficient growth of high density multiwalled carbon nanotubes array with the steady growth rate of 3.6 µm per minute for the first 12 minutes and dropped by half after 40 minutes. Thicker and uniform iron catalyst film obtained from ferrocene vaporization is attributed to the multidirectional deposition of particles in the gaseous form.

  13. A statistical mechanics model of carbon nanotube macro-films

    Institute of Scientific and Technical Information of China (English)

    2011-01-01

    Carbon nanotube macro-films are two-dimensional films with micrometer thickness and centimeter by centimeter in-plane dimension.These carbon nanotube macroscopic assemblies have attracted significant attention from the material and mechanics communities recently because they can be easily handled and tailored to meet specific engineering needs.This paper reports the experimental methods on the preparation and characterization of single-walled carbon nanotube macro-films,and a statistical mechanics model on ...

  14. ENHANCING ADHESION OF TETRAHEDRAL AMORPHOUS CARBON FILMS

    Institute of Scientific and Technical Information of China (English)

    Zhao Yuqing; Lin Yi; Wang Xiaoyan; Wang Yanwu; Wei Xinyu

    2005-01-01

    Objective The high energy ion bombardment technique is applied to enhancing the adhesion of the tetrahedral amorphous carbon (TAC) films deposited by the filtered cathode vacuum arc (FCVA). Methods The abrasion method, scratch method, heating and shaking method as well as boiling salt solution method is used to test the adhesion of the TAC films on various material substrates. Results The test results show that the adhesion is increased as the ion bombardment energy increases. However, if the bombardment energy were over the corresponding optimum value, the adhesion would be enhanced very slowly for the harder material substrates and drops quickly, for the softer ones. Conclusion The optimum values of the ion bombardment energy are larger for the harder materials than that for the softer ones.

  15. Heteroepitaxial film silicon solar cell grown on Ni-W foils

    Energy Technology Data Exchange (ETDEWEB)

    Wee, Sung Hun [ORNL; Cantoni, Claudia [ORNL; Fanning, Thomas [Ampulse Corporation; Teplin, Charles [National Renewable Energy Laboratory (NREL); Bogorin, Daniela Florentina [ORNL; Bornstein, Jon [Ampulse Corporation; Bowers, Karen [Ampulse Corporation; Schroeter, [Ampulse Corporation; Hasoon, Falah [National Renewable Energy Laboratory (NREL); Branz, Howard [National Renewable Energy Laboratory (NREL); Paranthaman, Mariappan Parans [ORNL; Goyal, Amit [ORNL

    2013-01-01

    Today, silicon-wafer-based technology dominates the photovoltaic (PV) industry because it enables high efficiency, is produced from abundant, non-toxic materials and is proven in the PV marketplace.[1] However, costs associated with the wafer itself limit ultimate cost reductions.[1,2] PV based on absorber layers of crystalline Si with only 2 to 10 m thickness are a promising route to reduce these costs, while maintaining efficiencies above 15%.[3-5] With the goal of fabricating low-cost film crystalline Si (c-Si), recent research has explored wafer peeling,[6,7] crystallization of amorphous silicon films on glass,[4,8-10] and seed and epitaxy approaches.[3,5,11] In this third approach, one initially forms a seed layer that establishes the grain size and crystalline order. The Si layer is then grown heteroepitaxially on the seed layer, so that it replicates the seed crystal structure. In all of these film c-Si approaches, the critical challenge is to grow c-Si with adequate material quality: specifically, the diffusion length (LD) must be at least three times the film thickness.[12] In polycrystalline Si films, grain boundaries (GBs) are recombination-active and significantly reduce LD. This adverse effects of GBs motivates research into growth of large grained c-Si [13,14] (for a low density of GBs) and biaxially-textured c-Si [11] (for low-angle GBs).

  16. Epitaxially-Grown Europium-Doped Barium Titanate Films on Various Substrates for Red Emission.

    Science.gov (United States)

    Hwang, Kyu-Seog; Jeon, Young-Sun; Lee, Young-Hwan; Hwangbo, Seung; Kim, Jin-Tae

    2015-10-01

    Intense red photoluminescence under ultraviolet excitation was observed in epitaxially-grown europium-doped perovskite BaTiO3 thin films deposited on the SrTiO3 (100), MgO (100) and sapphire (0001) substrates using metal carboxylate complexes. Precursor films prepared by spin coating were pyrolyzed at 250 °C for 120 min in argon, followed by final annealing at 850 °C for 60 min in argon. Crystallinity and epitaxy of the films were analyzed by X-ray diffraction θ-2θ scan and pole-figure analysis. Photoluminescence of the thin films at room temperature under 254 nm was confirmed by a fluorescent spectrophotometer. The obtained epitaxial BaTiO3 thin films on the SrTiO3 (100) and MgO (100) substrates show an intense red-emission lines at 615 nm corresponding to the (5)D0 --> (7)F2 transitions on Eu(3+) with broad bands at 595 and 650 nm. PMID:26726427

  17. Transparent conductive Al-doped ZnO thin films grown at room temperature

    Energy Technology Data Exchange (ETDEWEB)

    Wang Yuping; Lu Jianguo; Bie Xun; Gong Li; Li Xiang; Song Da; Zhao Xuyang; Ye Wenyi; Ye Zhizhen [State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China)

    2011-05-15

    Aluminum-doped ZnO (ZnO:Al, AZO) thin films were prepared on glass substrates by dc reactive magnetron sputtering from a Zn-Al alloy target at room temperature. The effects of the Ar-to-O{sub 2} partial pressure ratios on the structural, electrical, and optical properties of AZO films were studied in detail. AZO films grown using 100:4 to 100:8 Ar-to-O{sub 2} ratio result in acceptable quality films with c-axis orientated crystals, uniform grains, 10{sup -3} {Omega} cm resistivity, greater than 10{sup 20} cm{sup -3} electron concentration, and high transmittance, 90%, in the visible region. The lowest resistivity of 4.11x10{sup -3} {Omega} cm was obtained under the Ar-to-O{sub 2} partial pressure ratio of 100:4. A relatively strong UV emission at {approx}3.26 eV was observed in the room-temperature photoluminescence spectrum. X-ray photoelectron spectroscopy analysis confirmed that Al was introduced into ZnO and substitutes for Zn and doped the film n-type.

  18. Photoluminescence of localized excitons in ZnCdO thin films grown by molecular beam epitaxy

    Science.gov (United States)

    Wu, T. Y.; Huang, Y. S.; Hu, S. Y.; Lee, Y. C.; Tiong, K. K.; Chang, C. C.; Shen, J. L.; Chou, W. C.

    2016-07-01

    We have investigated the luminescence characteristics of Zn1-xCdxO thin films with different Cd contents grown by molecular beam epitaxy system. The temperature-dependent photoluminescence (PL) and excitation power-dependent PL spectra were measured to clarify the luminescence mechanisms of the Zn1-xCdxO thin films. The peak energy of the Zn1-xCdxO thin films with increasing the Cd concentration is observed as redshift and can be fitted by the quadratic function of alloy content. The broadened full-width at half-maximum (FWHM) estimated from the 15 K PL spectra as a function of Cd content shows a larger deviation between the experimental values and theoretical curve, which indicates that experimental FWHM values are affected not only by alloy compositional disorder but also by localized excitons occupying states in the tail of the density of states. The Urbach energy determined from an analysis of the lineshape of the low-energy side of the PL spectrum and the degree of localization effect estimated from the temperature-induced S-shaped PL peak position described an increasing mean exciton-localization effects in ZnCdO films with increasing the Cd content. In addition, the PL intensity and peak position as a function of excitation power are carried out to clarify the types of radiative recombination and the effects of localized exciton in the ZnCdO films with different Cd contents.

  19. Crystallinity Improvement of ZnO Thin Film on Different Buffer Layers Grown by MBE

    Directory of Open Access Journals (Sweden)

    Shao-Ying Ting

    2012-01-01

    Full Text Available The material and optical properties of ZnO thin film samples grown on different buffer layers on sapphire substrates through a two-step temperature variation growth by molecular beam epitaxy were investigated. The thin buffer layer between the ZnO layer and the sapphire substrate decreased the lattice mismatch to achieve higher quality ZnO thin film growth. A GaN buffer layer slightly increased the quality of the ZnO thin film, but the threading dislocations still stretched along the c-axis of the GaN layer. The use of MgO as the buffer layer decreased the surface roughness of the ZnO thin film by 58.8% due to the suppression of surface cracks through strain transfer of the sample. From deep level emission and rocking curve measurements it was found that the threading dislocations play a more important role than oxygen vacancies for high-quality ZnO thin film growth.

  20. Fabrication of horizontally grown silicon nanowires using a thin aluminum film as a catalyst

    International Nuclear Information System (INIS)

    We present a new method for the fabrication of horizontal silicon nanowires for application in nanoelectronic devices. A web of horizontally connected silicon nanowires is grown on a silicon substrate using a thin aluminum film as a catalyst. A thin layer of oxide is thermally grown on a silicon substrate. The oxide layer is then selectively etched using photolithography. A thin layer of aluminum is thermally evaporated on the substrate with the patterned oxide layer. When the sample is annealed above the eutectic temperature, we show that the silicon gets deposited along the grain boundaries of aluminum in the form of thin nanowires. We show that this phenomenon is due to the high solubility of silicon in aluminum at high temperatures. The surface morphology was analyzed using Scanning Electron Microscopy (SEM). The compositional analysis was done using Energy Dispersive X-ray spectroscopy (EDX).

  1. The magnetic and chemical structural property of the epitaxially-grown multilayered thin film

    Science.gov (United States)

    Lee, Hwachol

    L10 FePt- and Fe-related alloys such as FePtRh, FeRh and FeRhPd have been studied for the high magnetocrystalline anisotropy and magnetic phase transition property for the future application. In this work, the thin film structural and magnetic property is investigated for the selected FePtRh and FeRhPd alloys. The compositionally-modulated L10 FePtRh multilayered structure is grown epitaxially on a-plane Al2O3 with Cr and Pt buffer layer at 600degC growth temperature by DC sputtering technique and examined for the structural, interfacial and magnetic property. For the epitaxially grown L10 [Fe50Pt45Rh5 (FM) (10nm) / Fe50Pt25Rh25 (AFM) (20nm)]x8 superlattice, the magnetically and chemically sharp interface formation between layers was observed in X-ray diffraction, transmission electron microscopy and polarized neutron reflectivity measurements with the negligible exchange bias at room and a slight coupling effect at lower temperature regime. For FeRhPd, the magnetic phase transition of epitaxially-grown 111-oriented Fe46Rh48Pd6 thin film is studied. The applied Rhodium buffer layer on a-plane Al2O3 (11 20) at 600degC shows the extraordinarily high quality of epitaxial film in (111) orientation, where two broad and coherent peak in rocking curve, and Laue oscillations are observed. The epitaxially-grown Pd-doped FeRh on Pt (111) grown at 600degC, 700degC exhibits the co-existing stable L10 (111) and B2 (110) structures and magnetic phase transition around 300degC. On the other hand, the partially-ordered FeRhPd structure grown at 400degC, 500degC shows background high ferromagnetic state over 5K˜350K temperature. For the reduced thickness of Fe46Rh48Pd 6, the ferromagnetic state becomes dominant with a reduced portion of the film undergoing a magnetic phase transition. For some epitaxial FeRhPd film, the spin-glass-like disordered state is also observed in field dependent SQUID measurement. For the tri-layered FeRhPd with thin Pt spacer, the background

  2. Purification of Single-walled Carbon Nanotubes Grown by a Chemical Vapour Deposition (CVD) Method

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    A procedure for purification of single-walled carbon nanotubes(SWNTs) grown by the chemical vapour deposition (CVD) of carbon monooxide has been developed. Based on the result from TGA/DTA of as-prepared sample, the oxidation temperature was determined. The process included sonication, oxidation and acid washing steps. The purity and yield after purification were determined and estimated by TEM. Moreover, for the first time, a loop structure for CVD SWNTs has been observed.

  3. Structural and optical characterization of undoped and indium-doped CdS films grown by pulsed laser deposition

    International Nuclear Information System (INIS)

    Three types of CdS thin films, one undoped and two n-doped, have been grown on the quartz substrates by pulsed laser deposition technique. The two n-doped films have been deposited by laser ablating a home-made target obtained by mixing CdS and metallic Indium powders with two different concentrations of In powder weight (1 and 5%). The films were grown highly oriented along the (002) direction of the hexagonal phase. Raman spectra show that the LO peak broadens as the Indium doping increases, due to the increase of compositional disorder. Band filling effects characterize the absorption spectra of the heavily doped films: in particular, the band gap of the doped films presents an evident blue-shift with respect to the undoped film, due to Burstein-Moss effect. Photoluminescence spectra show the intrinsic radiative recombinations persisting up to room temperature

  4. Topological insulator Bi2Se3 thin films grown on double-layer graphene by molecular beam epitaxy

    OpenAIRE

    Song, Can-Li; Wang, Yi-Lin; Jiang, Ye-Ping; Zhang, Yi; Chang, Cui-Zu; Wang, Lili; He, Ke; Chen, Xi; Jia, Jin-Feng; Wang, Yayu; Fang, Zhong; Dai, Xi; Xie, Xin-Cheng; Qi, Xiao-Liang; Zhang, Shou-Cheng

    2010-01-01

    Atomically flat thin films of topological insulator Bi2Se3 have been grown on double-layer graphene formed on 6H-SiC(0001) substrate by molecular beam epitaxy. By a combined study of reflection high energy electron diffraction and scanning tunneling microscopy, we identified the Se-rich condition and temperature criterion for layer-by-layer growth of epitaxial Bi2Se3 films. The as-grown films without doping exhibit a low defect density of 1.0\\pm 0.2x1011/cm2, and become a bulk insulator at a ...

  5. Photoluminescence properties of ZnO films grown on InP by thermally oxidizing metallic Zn films

    CERN Document Server

    Chen, S J; Zhang, J Y; Lu, Y M; Shen, D Z; Fan, X W

    2003-01-01

    Photoluminescence (PL) properties of ZnO films grown on (001) InP substrates by thermal oxidization of metallic Zn films, in which oxygen vacancies and interstitial Zn ions are compensated by P ions diffusing from (001) InP substrates, are investigated. X-ray diffraction spectra indicate that P ions have diffused into the Zn films and chemically combined with Zn ions to form Zn sub 3 P sub 2. Intense free exciton emission dominates the PL spectra of ZnO films with very weak deep-level emission. Low-temperature PL spectra at 79 K are dominated by neutral-donor bound exciton emission at 3.299 eV (I sub 4) with a linewidth of 17.3 meV and neutral-acceptor bound exciton emission at 3.264 eV. The free exciton emission increases with increasing temperature and eventually dominates the emission spectrum for temperature higher than 170 K. Furthermore, the visible emission around 2.3 eV correlated with oxygen deficiencies and interstitial Zn defects was quenched to a remarkable degree by P diffusing from InP substrate...

  6. Polycrystalline ZnO: B grown by LPCVD as TCO for thin film silicon solar cells

    International Nuclear Information System (INIS)

    Conductive zinc oxide (ZnO) grown by low pressure chemical vapor deposition (LPCVD) technique possesses a rough surface that induces an efficient light scattering in thin film silicon (TF Si) solar cells, which makes this TCO an ideal candidate for contacting such devices. IMT-EPFL has developed an in-house LPCVD process for the deposition of nanotextured boron doped ZnO films used as rough TCO for TF Si solar cells. This paper is a general review and synthesis of the study of the electrical, optical and structural properties of the ZnO:B that has been performed at IMT-EPFL. The influence of the free carrier absorption and the grain size on the electrical and optical properties of LPCVD ZnO:B is discussed. Transport mechanisms at grain boundaries are studied. It is seen that high doping of the ZnO grains facilitates the tunnelling of the electrons through potential barriers that are located at the grain boundaries. Therefore, even if these potential barriers increase after an exposition of the film to a humid atmosphere, the heavily doped LPCVD ZnO:B layers show a remarkable stable conductivity. However, the introduction of diborane in the CVD reaction induces also a degradation of the intra-grain mobility and increases over-proportionally the optical absorption of the ZnO:B films. Hence, the necessity to finely tune the doping level of LPCVD ZnO:B films is highlighted. Finally, the next challenges to push further the optimization of LPCVD ZnO:B films for thin film silicon solar cells are discussed, as well as some remarkable record cell results achieved with LPCVD ZnO:B as front electrode.

  7. Polycrystalline ZnO: B grown by LPCVD as TCO for thin film silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Fay, Sylvie, E-mail: Sylvie.fay@epfl.c [Ecole Polytechnique Federale de Lausanne (EPFL), Institute of Microengineering (IMT), Photovoltaics and Thin Film Electronics Laboratory, Breguet 2, 2000 Neuchatel (Switzerland); Steinhauser, Jerome [Now at Oerlikon Solar Lab, Neuchatel CH-2000 (Switzerland); Nicolay, Sylvain; Ballif, Christophe [Ecole Polytechnique Federale de Lausanne (EPFL), Institute of Microengineering (IMT), Photovoltaics and Thin Film Electronics Laboratory, Breguet 2, 2000 Neuchatel (Switzerland)

    2010-03-31

    Conductive zinc oxide (ZnO) grown by low pressure chemical vapor deposition (LPCVD) technique possesses a rough surface that induces an efficient light scattering in thin film silicon (TF Si) solar cells, which makes this TCO an ideal candidate for contacting such devices. IMT-EPFL has developed an in-house LPCVD process for the deposition of nanotextured boron doped ZnO films used as rough TCO for TF Si solar cells. This paper is a general review and synthesis of the study of the electrical, optical and structural properties of the ZnO:B that has been performed at IMT-EPFL. The influence of the free carrier absorption and the grain size on the electrical and optical properties of LPCVD ZnO:B is discussed. Transport mechanisms at grain boundaries are studied. It is seen that high doping of the ZnO grains facilitates the tunnelling of the electrons through potential barriers that are located at the grain boundaries. Therefore, even if these potential barriers increase after an exposition of the film to a humid atmosphere, the heavily doped LPCVD ZnO:B layers show a remarkable stable conductivity. However, the introduction of diborane in the CVD reaction induces also a degradation of the intra-grain mobility and increases over-proportionally the optical absorption of the ZnO:B films. Hence, the necessity to finely tune the doping level of LPCVD ZnO:B films is highlighted. Finally, the next challenges to push further the optimization of LPCVD ZnO:B films for thin film silicon solar cells are discussed, as well as some remarkable record cell results achieved with LPCVD ZnO:B as front electrode.

  8. CVD growth and field emission properties of nanostructured carbon films

    International Nuclear Information System (INIS)

    An investigation of the growth mechanisms, electronical and structural properties, and field emissions of carbon films obtained by chemical vapour deposition showed that field emissions from films composed of spatially oriented carbon nanotubes and plate-like graphite nanocrystals exhibit non-metallic behaviour. The experimental evidence of work function local reduction for carbon film materials is reported here. A model of the emission site is proposed and the mechanism of field emission from nanostructured carbon materials is described. In agreement with the model proposed here, the electron emission in different carbon materials results from sp3-like defects in an sp2 network of their graphite-like component. (author)

  9. Impedance analysis of different cell monolayers grown on gold-film electrodes.

    Science.gov (United States)

    Reiss, Bjoern; Wegener, Joachim

    2015-08-01

    Impedance analysis of mammalian cells grown on planar film electrodes provides a label-free, non-invasive and unbiased observation of cell-based assays addressing the biological response to drugs, toxins or stressors in general. Whereas the time course of the measured impedance at one particular frequency has been used a lot for quantitative monitoring, in-depth analysis of the frequency-dependent impedance spectra is rarely performed. This study summarizes and validates the existing model for spectral analysis by applying it to eight different cell types from different mammalian tissues. Model parameters correctly predict the functional and/or structural properties of the individual cells under study. PMID:26737923

  10. Lutetium-doped EuO films grown by molecular-beam epitaxy

    OpenAIRE

    Melville, A; Mairoser, T.; Mannhart, J.; Schlom, D. G.; Schmehl, A.; Shai, D. E.; Monkman, E. J.; Harter, J. W.; Heeg, T.; Holländer, B; Schubert, J; Shen, K. M.

    2012-01-01

    The effect of lutetium doping on the structural, electronic, and magnetic properties of epitaxial EuO thin films grown by reactive molecular-beam epitaxy is experimentally investigated. The behavior of Lu-doped EuO is contrasted with doping by lanthanum and gadolinium. All three dopants are found to behave similarly despite differences in electronic configuration and ionic size. Andreev reflection measurements on Lu-doped EuO reveal a spin-polarization of 96% in the conduction band, despite n...

  11. Highly Strained Si Films with Ultra-low Dislocation Density Grown on Virtual Substrates of Thin Thickness

    Institute of Scientific and Technical Information of China (English)

    YANG Hong-Bin; ZHANG Xiang-Jiu

    2009-01-01

    @@ By using compositionally graded SiGe films as virtual substrates, tensile strained Si films with the strain of 1.5% and the threading dislocation density less than 1.0×105cm-2 are successfully grown in micron size windows by molecular beam epitaxy (MBE). The thickness of the virtual substrates was only 330nm. On the surface of the s-Si films no cross-hatched lines resulting from misfit dislocations could be observed. We attribute these results to the edge-induced strain relaxation of the epitaxial films in windows, and the patterned virtual substrates with compositionally graded SiGe films.

  12. Magnetic properties of MnAs thin films grown on GaAs (0 0 1) by MOVPE

    Energy Technology Data Exchange (ETDEWEB)

    Sterbinsky, G.E. [Department of Materials Science and Engineering, Northwestern University, 2220 Campus Drive, Evanston, IL 60208-3108 (United States); May, S.J. [Department of Materials Science and Engineering, Northwestern University, 2220 Campus Drive, Evanston, IL 60208-3108 (United States); Chiu, P.T. [Department of Materials Science and Engineering, Northwestern University, 2220 Campus Drive, Evanston, IL 60208-3108 (United States); Wessels, B.W. [Department of Materials Science and Engineering, Northwestern University, 2220 Campus Drive, Evanston, IL 60208-3108 (United States)]. E-mail: b-wessels@northwestern.edu

    2007-01-15

    The thickness dependence of the in-plane uniaxial anisotropy and coercive field of epitaxial MnAs thin films on GaAs (0 0 1) substrates has been determined from the magneto-optic Kerr effect. The metalorganic vapor phase epitaxy grown films are single {alpha} phase at room temperature with a B-type variant orientation. The coercive field of these films increases to a maximum for a film 35 nm thick and then decreases in thicker films. An increase in magnetic anisotropy field with increasing thickness is observed and is attributed to an increasing volume contribution to the anisotropy constant.

  13. Magnetic properties of MnAs thin films grown on GaAs (0 0 1) by MOVPE

    Science.gov (United States)

    Sterbinsky, G. E.; May, S. J.; Chiu, P. T.; Wessels, B. W.

    2007-01-01

    The thickness dependence of the in-plane uniaxial anisotropy and coercive field of epitaxial MnAs thin films on GaAs (0 0 1) substrates has been determined from the magneto-optic Kerr effect. The metalorganic vapor phase epitaxy grown films are single α phase at room temperature with a B-type variant orientation. The coercive field of these films increases to a maximum for a film 35 nm thick and then decreases in thicker films. An increase in magnetic anisotropy field with increasing thickness is observed and is attributed to an increasing volume contribution to the anisotropy constant.

  14. Growth and structure of MBE grown TiO2 anatase films with rutile nano-crystallites

    Energy Technology Data Exchange (ETDEWEB)

    Shao, Rui; Wang, Chong M.; McCready, David E.; Droubay, Timothy C.; Chambers, Scott A.

    2007-03-15

    We have grown TiO2 anatase films with rutile nanocrystalline inclusions using molecular beam epitaxy under different growth conditions. This model system is important for investigating the role of rutile/anatase interfaces in heterogeneous photocatalysis. To control the film structure, we grew a pure anatase (001) layer at a slow rate and then increased the growth rate to drive the nucleation of rutile particles. Structure analysis indicates that the rutile phase has four preferred orientations in the anatase film.

  15. Carbon nanotube thin film transistors based on aerosol methods

    International Nuclear Information System (INIS)

    We demonstrate a fabrication method for high-performance field-effect transistors (FETs) based on dry-processed random single-walled carbon nanotube networks (CNTNs) deposited at room temperature. This method is an advantageous alternative to solution-processed and direct CVD grown CNTN FETs, which allows using various substrate materials, including heat-intolerant plastic substrates, and enables an efficient, density-controlled, scalable deposition of as-produced single-walled CNTNs on the substrate directly from the aerosol (floating catalyst) synthesis reactor. Two types of thin film transistor (TFT) structures were fabricated to evaluate the FET performance of dry-processed CNTNs: bottom-gate transistors on Si/SiO2 substrates and top-gate transistors on polymer substrates. Devices exhibited on/off ratios up to 105 and field-effect mobilities up to 4 cm2 V-1 s-1. The suppression of hysteresis in the bottom-gate device transfer characteristics by means of thermal treatment in vacuum and passivation by an atomic layer deposited Al2O3 film was investigated. A 32 nm thick Al2O3 layer was found to be able to eliminate the hysteresis.

  16. Electrochemical impedance spectroscopy on nanostructured carbon electrodes grown by supersonic cluster beam deposition

    Energy Technology Data Exchange (ETDEWEB)

    Bettini, Luca Giacomo; Bardizza, Giorgio; Podesta, Alessandro; Milani, Paolo; Piseri, Paolo, E-mail: piseri@mi.infn.it [Universita degli Studi di Milano, Dipartimento di Fisica and CIMaINa (Italy)

    2013-02-15

    Nanostructured porous films of carbon with density of about 0.5 g/cm{sup 3} and 200 nm thickness were deposited at room temperature by supersonic cluster beam deposition (SCBD) from carbon clusters formed in the gas phase. Carbon film surface topography, determined by atomic force microscopy, reveals a surface roughness of 16 nm and a granular morphology arising from the low kinetic energy ballistic deposition regime. The material is characterized by a highly disordered carbon structure with predominant sp2 hybridization as evidenced by Raman spectroscopy. The interface properties of nanostructured carbon electrodes were investigated by cyclic voltammetry and electrochemical impedance spectroscopy employing KOH 1 M solution as aqueous electrolyte. An increase of the double layer capacitance is observed when the electrodes are heat treated in air or when a nanostructured nickel layer deposited by SCBD on top of a sputter deposited film of the same metal is employed as a current collector instead of a plain metallic film. This enhancement is consistent with an improved charge injection in the active material and is ascribed to the modification of the electrical contact at the interface between the carbon and the metal current collector. Specific capacitance values up to 120 F/g have been measured for the electrodes with nanostructured metal/carbon interface.

  17. Electrical and optical properties of carbon-doped GaN grown by MBE on MOCVD GaN templates using a CCl4 dopant source

    OpenAIRE

    Armitage, Rob; Yang, Qing; Feick, Henning; Park, Yeonjoon; Weber, Eicke R.

    2002-01-01

    Carbon-doped GaN was grown by plasma-assisted molecular-beam epitaxy using carbon tetrachloride vapor as the dopant source. For moderate doping mainly acceptors were formed, yielding semi-insulating GaN. However at higher concentrations p-type conductivity was not observed, and heavily doped films (>5x10^20 cm-3) were actually n-type rather than semi-insulating. Photoluminescence measurements showed two broad luminescence bands centered at 2.2 and 2.9 eV. The intensity of both bands inc...

  18. Magnetic anisotropy of epitaxially grown Co and its alloy thin films

    International Nuclear Information System (INIS)

    We have performed a systematic study on the correlation between magnetic anisotropy energy (MAE) and crystal structures, such as lattice parameters, stacking fault densities, lattice strain, and so on, for epitaxially grown Co, Co-Pt, and Co-Pd alloy thin films, and have found that the MAE strongly depends on the axial ratio c/a of the hcp crystal lattice. As the c/a of hcp Co decreases down to ∼1.61 which is smaller than 1.622 for bulk Co, the MAE becomes significantly enhanced up to ∼106 J m-3. Similar trends have also been verified for hcp Co-Pt and -Pd. These results, which are qualitatively consistent with the classic single-ion anisotropy model and the recent first principles calculation, suggest a new effective way to control the MAE of magnetic thin films.

  19. STM/STS study of graphene directly grown on h-BN films on Cu foils

    Science.gov (United States)

    Jang, Won-Jun; Wang, Min; Jang, Seong-Gyu; Kim, Minwoo; Park, Seong-Yong; Kim, Sang-Woo; Kahng, Se-Jong; Choi, Jae-Young; Song, Young; Lee, Sungjoo; Sanit Collaboration; Department Of Physics, Korea University Collaboration; Graphene Research Center, Samsung Advanced Institute Of Technology Collaboration

    2013-03-01

    Graphene-based devices on standard SiO2 substrate commonly exhibit inferior characteristics relative to the expected intrinsic properties of graphene, due to the disorder existing at graphene-SiO2 interface. Recently, it has been shown that exfoliated and chemical vapor deposition (CVD) graphene transferred onto hexagonal boron nitride (h-BN) possesses significantly reduced charge inhomogeneity, and yields improved device performance. Here we report the scanning tunneling microscopy (STM) and spectroscopy (STS) results obtained from a graphene layer directly grown on h-BN insulating films on Cu foils. STS measurements illustrate that graphene/h-BN film is charge neutral without electronic perturbation from h-BN/Cu substrate. Corresponding Author

  20. Thermal stability of CdZnO thin films grown by molecular-beam epitaxy

    International Nuclear Information System (INIS)

    CdZnO thin films with near-band-edge (NBE) photoluminescence (PL) emission from 2.39 eV to 2.74 eV were grown by plasma-assisted molecular-beam epitaxy on c-plane sapphire substrates with 800 deg. C in situ annealing. CdZnO thin films evolve from pure wurtzite (wz) structure, to mixture of wz and rock-salt (rs) structures confirmed by X-ray diffraction studies. Rapid-thermo-annealing (RTA) was performed on in situ annealed CdZnO samples. Pure wz CdZnO shows insignificant NBE PL peak shift after RTA, while mixture structure CdZnO shows evident blue shifts due to phase change after annealing, indicating the rs phase CdZnO changes to wz phase CdZnO during RTA process.

  1. In situ-grown hexagonal silicon nanocrystals in silicon carbide-based films.

    Science.gov (United States)

    Kim, Tae-Youb; Huh, Chul; Park, Nae-Man; Choi, Cheol-Jong; Suemitsu, Maki

    2012-01-01

    Silicon nanocrystals (Si-NCs) were grown in situ in carbide-based film using a plasma-enhanced chemical vapor deposition method. High-resolution transmission electron microscopy indicates that these nanocrystallites were embedded in an amorphous silicon carbide-based matrix. Electron diffraction pattern analyses revealed that the crystallites have a hexagonal-wurtzite silicon phase structure. The peak position of the photoluminescence can be controlled within a wavelength of 500 to 650 nm by adjusting the flow rate of the silane gas. We suggest that this phenomenon is attributed to the quantum confinement effect of hexagonal Si-NCs in silicon carbide-based film with a change in the sizes and emission states of the NCs. PMID:23171576

  2. Improved efficiency of aluminum doping in ZnO thin films grown by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Park, Hui Kyung; Heo, Jaeyeong, E-mail: jheo@jnu.ac.kr

    2014-08-01

    The improved efficiency of aluminum doping in ZnO (AZO) thin films grown by atomic layer deposition was demonstrated by controlling the number of surface reaction sites for trimethylalumium (TMA). Prolonged purge time (120 s) for deionized water used as an oxidant decreased the number of hydroxyl groups on the surface via dehydration reaction, resulting in the reduced chemisorption of TMA. The enhanced doping efficiency by sparse distribution of Al dopants was demonstrated by the increased carrier concentration from ~4 × 10²⁰ to ~6 × 10²⁰ cm⁻³ for the same Al doping cycle ratio. A comparison was made among the AZO films formed by using the control and modified recipes, focusing on their electrical, structural, and optical properties.

  3. Effect of external stress on phase diagrams and dielectric properties of epitaxial ferroelectric thin films grown on orthorhombic substrates

    Institute of Scientific and Technical Information of China (English)

    L(U) Ye-gang; DENG Shui-feng; GONG Lun-jun; YANG Jian-tao

    2006-01-01

    A Landau-Ginsburg-Devonshire(LD)-type thermodynamic theory was used to describe the effect of external stress on phase diagrams and dielectric properties of epitaxial ferroelectric thin films grown on orthorhombic substrates which induce nonequally biaxial misfit strains in the films plane. The "misfit strain-external stress" and "external stress-temperature" phase diagrams were constructed for single-domain BaTiO3(BT) and PbTiO3(PT) thin films. It is shown that the external stress may lead to the rotation of the spontaneous polarization and a gradual change of its magnitude, which may result in phase transition. Nonequally biaxial misfit strains dependence of the stability of polarization states may be governed by external stress. At room temperature,stress-induced ferroelectric/paraelectric phase transition which occurs in film on cubic substrate does not take place in the ferroelectric thin film grown on orthorhombic substrate. It is also shown that the nonequally misfit strains in the film plane may lead to the appearance of new phases which do not form in films grown on cubic substrates under external stress. The dependence of the dielectric response on the external stress is also studied. It is shown that the dielectric constants of single-domain PT and BT films are very sensitive to the external stress under the given anisotropic misfit strains-temperature conditions. It presents theoretical evidence that the external stress and anisotropic misfit strains can be employed for improving the thin films physical properties.

  4. Properties of nitrogen containing diamond-like carbon films

    International Nuclear Information System (INIS)

    Optical and mechanical properties of nitrogen containing diamond- like carbon (NC-DLC) films deposited by RF plasma decomposition of CH4:H2:N2 gas mixture were investigated. Nitrogen was incorporated into DLC films both during film growth and after deposition of film by implantation of nitrogen ions. It was shown that both optical and mechanical properties of the films strongly depend on nitrogen content in the films. In some cases the mechanical properties of nitrogen implanted films were improved in comparison with unimplanted samples. (author). 7 refs., 2 figs

  5. Nondestructive characterization of GaN films grown at low and high temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Yan, C.H.; Yao, H.W.; Hove, J.M. van; Wowchak, A.M.; Chow, P.P.; Han, J.; Zavada, J.M.

    2000-07-01

    GaN films grown on GaAs and sapphire substrates by molecular beam epitaxy (MBE) and metalorganic vapor phase epitaxy (MOVPE) at both low and high temperatures (LT and HT) were characterized by Raman scattering and variable angle spectroscopic ellipsometry (VASE). Optical phonon spectra of GaN films are obtained through back-scattering geometry. Crystal quality of these films was qualitatively examined using phonon line-width. Phonon spectra showed that the HT GaN has wurtzite crystal structure, while LT GaN and GaN/GaAs have cubic-like structures. Thickness nonuniformity and defect-related absorption can be characterized by pseudo dielectric functions directly. Surface roughness also can be determined by using an effective-medium approximation (EMA) over-layer in a VASE analysis. Anisotropic optical constants of GaN, both ordinary and extraordinary, were obtained in the spectral range of 0.75 to 6.5 eV with the consideration of surface roughness, through the small and large angles of incidence, respectively. The film thickness of the GaN was accurately determined via the analysis as well.

  6. Induced polarized state in intentionally grown oxygen deficient KTaO{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Mota, D. A.; Romaguera-Barcelay, Y.; Tkach, A.; Agostinho Moreira, J.; Almeida, A. [IFIMUP and IN-Institute of Nanoscience and Nanotechnology, Department of Physics and Astronomy, Faculty of Science of University of Porto, Rua do Campo Alegre, 687, 4169-007 Porto (Portugal); Perez de la Cruz, J. [INESC TEC, Rua do Campo Alegre, 687, 4169-007 Porto (Portugal); Vilarinho, P. M. [Department of Ceramics and Glass Engineering, CICECO, University of Aveiro, 3810-193 Aveiro (Portugal); Tavares, P. B. [Centro de Quimica, Universidade de Tras-os-Montes e Alto Douro, Apartado 1013, 5001-801 Vila Real (Portugal)

    2013-07-21

    Deliberately oxygen deficient potassium tantalate thin films were grown by RF magnetron sputtering on Si/SiO{sub 2}/Ti/Pt substrates. Once they were structurally characterized, the effect of oxygen vacancies on their electric properties was addressed by measuring leakage currents, dielectric constant, electric polarization, and thermally stimulated depolarization currents. By using K{sub 2}O rich KTaO{sub 3} targets and specific deposition conditions, KTaO{sub 3-{delta}} oxygen deficient thin films with a K/Ta = 1 ratio were obtained. Room temperature X-ray diffraction patterns show that KTaO{sub 3-{delta}} thin films are under a compressive strain of 2.3% relative to KTaO{sub 3} crystals. Leakage current results reveal the presence of a conductive mechanism, following the Poole-Frenkel formalism. Furthermore, dielectric, polarization, and depolarization current measurements yield the existence of a polarized state below T{sub pol} {approx} 367 Degree-Sign C. A Cole-Cole dipolar relaxation was also ascertained apparently due to oxygen vacancies induced dipoles. After thermal annealing the films in an oxygen atmosphere at a temperature above T{sub pol}, the aforementioned polarized state is suppressed, associated with a drastic oxygen vacancies reduction emerging from annealing process.

  7. SPM Study and Growth Mechanism of Graphene Directly CVD-Grown on h-BN Film

    Science.gov (United States)

    Song, Young Jae; Kim, Minwoo; Wu, Qinke; Lee, Joohyun; Lee, Sungjoo; Wang, Min

    2014-03-01

    We present our Scanning Tunneling Microscopy (STM)/Spectroscopy (STS) and Kelvin Probe Force Microscope (KPFM) study for graphene directly CVD-grown on h-BN film. High resolution STM image shows perfect honeycomb lattice structure of graphene on top surface and Moiré pattern indicating the structural interference patter with the underlying h-BN crystal. Non-disturbed electronic structure of graphene on h-BN film is also confirmed by spatially-resolved STS measurements, which show very sharp and symmetric V shape with a Dirac point at Fermi level. To confirm the graphene growth mechanism on h-BN film/Cu foil, careful Atomic Force Microscopy (AFM) and Kelvin Probe Force Microscopy (KPFM) measurements were performed on different thickness of h-BN film on a SiO2 substrate to unveil the catalytic origin of graphene growth on h-BN/Cu. This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Korean government (MSIP) (Grant Numbers: 2009-0083540, 2011-0030046, 2012R1A1A2020089 and 2012R1A1A1041416).

  8. Effect of annealing on the properties of zinc oxide nanofiber thin films grown by spray pyrolysis technique

    Science.gov (United States)

    Sadananda Kumar, N.; Bangera, Kasturi V.; Shivakumar, G. K.

    2013-01-01

    Zinc oxide nanofiber thin films have been deposited on glass substrate by spray pyrolysis technique. The X-ray diffraction studies revealed that the films are polycrystalline with the hexagonal structure and a preferred orientation along (002) direction for films annealed for 1 h at 450 °C. Further increase in annealing time changes the preferred orientation to (100) direction. The scanning electron microscopic analysis showed the formation of ZnO nanofiber with an average diameter of approximately 800 nm for annealed films. The compositional analysis of nanofiber ZnO thin films were studied by time of flight secondary ion mass spectroscopy, which indicated oxygen deficiency in the films. The optical properties of annealed films have shown a variation in the band gap between 3.29 and 3.20 eV. The electrical conductivity of the as grown and annealed films showed an increase in the conductivity by two orders of magnitude with increase in annealing duration.

  9. Electronic properties of high-temperature superconducting thin films grown by pulsed laser deposition

    Science.gov (United States)

    Abrecht, M.; Ariosa, Daniel; Cloetta, D.; Margaritondo, Giorgio; Pavuna, Davor

    2002-11-01

    We use a pulsed laser deposition (PLD) setup to grow ultra-thin films of high temperature superconductors (HTSC) and transfer them in-situ into a photoemission chamber. Photoemission measurements on such films allow us to study non-cleavable materials, but can also give insights into aspects never measured before, like the influence of strain on the low energy electronic structure. Systematic studies of many different materials grown as films showed that Bi2Sr2CaCu2O8+x, Bi2Sr2Cu1O6+x, Bi2Sr2Ca2Cu3O10+x and La2-xSrxCuO4 films exhibit a conductor-like Fermi edge, but materials containing chains (such as YBa2Cu3O7-x) are prone to very rapid surface degradation, possibly related to critical oxygen loss at the surface. Among HTSC materials, La2-xSrxCuO4 is extremely interesting because of its rather simple structure and the fact that its critical temperature Tc can be enhanced by epitaxial strain. Here we present our first high resolution angular resolved photoemission spectroscopy (ARPES) results on 8 unit-cell thin La2-xSrxCuO4 films on SrLaAlO4 [001] substrates. Due to the lattice mismatch, such films are compressed in the copper oxygen planes and expanded in the c-axis direction. Results show a surprisingly modified Fermi surface compared to the one of non-strained samples.

  10. IR study on surface chemical properties of catalytic grown carbon nanotubes and nanofibers

    Institute of Scientific and Technical Information of China (English)

    Li-hua TENG; Tian-di TANG

    2008-01-01

    In this study, the surface chemical properties of carbon nanotubes (CNTs) and carbon nanofibers (CNFs) grown by catalytic decomposition of methane on nickel and cobalt based catalysts were studied by DRIFT (Diffuse Reflectance Infrared Fourier Transform) and transmission Infrared (IR) spectroscopy. The results show that the surface exists not only carbon-hydrogen groups, but also carboxyl, ketene or quinone (carbonyl) oxygen-containing groups. These functional groups were formed in the process of the material growth, which result in large amount of chemical defect sites on the walls.

  11. Carbon Doped MgB2 Thin Films using TMB

    Science.gov (United States)

    Wilke, R. H. T.; Li, Qi; Xi, X. X.; Lamborn, D. R.; Redwing, J.

    2007-03-01

    The most effective method to enhance the upper critical field in MgB2 is through carbon doping. In the case of thin films, ``alloying'' with carbon has resulted in enhanced Hc2 values estimated to be as high as 70 T for H parallel to ab and 40 T for H perpendicular ab [1]. ``Alloying'' refers to the in-situ Hybrid Physical-Chemical Vapor Deposition (HPCVD) of carbon containing MgB2 films using (C5H5)2Mg as the carbon source. While these films exhibit enhanced Hc2 values, there are amorphous boron- carbon phases in the grain boundaries that reduce the cross section area for superconducting current. We present here the results of our attempts to make more homogeneously carbon doped thin films using gaseuous trimethyl-boron (TMB) as the carbon source. Initial results indicate different behavior upon carbon doping using TMB from carbon-alloying. The microstructures and upper critical fields of the carbon doped films using TMB and carbon alloyed films will be compared. [1] V. Braccini et al., Phys. Rev. B 71 (2005) 012504. [2] A.V. Pogrebnyakov et al., Appl. Phys. Lett 85 (2004) 2017.

  12. Comparisons of Structural and Optical Properties of ZnO Films Grown on Sapphire and Si(001)

    Institute of Scientific and Technical Information of China (English)

    邱东江; 吴惠桢; 徐晓玲; 陈奶波

    2002-01-01

    Zinc oxide films were grown on sapphire and Si(001) substrates by reactive electron beam evaporation at low substrate temperatures. Atomic force microscopy (AFM), x-ray diffraction (XRD), and photoluminescence excitation (PLE) are employed to characterize the as-grown films. The AFM measurements have shown that all of the ZnO films present pillar-like growth properties, but the dimensional uniformity of the ZnO crystal pillars grown on sapphire was better than that on Si(001). The XRD results indicated that the prepared ZnO films both on sapphire and Si(001) were all highly c-axis oriented; the linewidths of ZnO (002) are only 0.19° and 0.28°, respectively. The PLE characterizations revealed the continuum absorption of the samples grown on sapphire. However, in the PLE spectra of the ZnO films grown on Si(001) substrates, a broad peak appears at the high-energy region, which indicates the formation of ZnO quantum dot structures on Si(001).

  13. Growth of graphene films from non-gaseous carbon sources

    Science.gov (United States)

    Tour, James; Sun, Zhengzong; Yan, Zheng; Ruan, Gedeng; Peng, Zhiwei

    2015-08-04

    In various embodiments, the present disclosure provides methods of forming graphene films by: (1) depositing a non-gaseous carbon source onto a catalyst surface; (2) exposing the non-gaseous carbon source to at least one gas with a flow rate; and (3) initiating the conversion of the non-gaseous carbon source to the graphene film, where the thickness of the graphene film is controllable by the gas flow rate. Additional embodiments of the present disclosure pertain to graphene films made in accordance with the methods of the present disclosure.

  14. Field emission characteristics of vertically aligned carbon nanotubes with honeycomb configuration grown onto glass substrate with titanium coating

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Yung-Jui [Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan (China); Chang, Hsin-Yueh; Chang, Hsuan-Chen [Department of Electronic and computer Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan (China); Shih, Yi-Ting; Su, Wei-Jhih [Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan (China); Ciou, Chen-Hong [Department of Electronic and computer Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan (China); Chen, Yi-Ling [Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan (China); Honda, Shin-ichi [Graduate School of Engineering, University of Hyogo, Himeji, Hyogo 671-2280 (Japan); Huang, Ying-Sheng [Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan (China); Department of Electronic and computer Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan (China); Lee, Kuei-Yi, E-mail: kylee@mail.ntust.edu.tw [Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan (China); Department of Electronic and computer Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan (China)

    2014-03-15

    Highlights: • We have successfully designed the honeycomb patterns on glass substrate by photolithography technique. • Honeycomb-VACNTs were synthesized successfully onto glass substrate by using thermal CVD and covered different Ti films on VACNTs by e-beam evaporation. • After coating the Ti films, the current density reached 7 mA/cm{sup 2} when the electric field was 2.5 V/μm. • The fluorescence of VACNTs with Ti 15 nm films exhibits the high brightness screen and emission uniformity. -- Abstract: Carbon nanotubes (CNTs) were grown successfully onto a glass substrate using thermal chemical vapor deposition (TCVD) with C{sub 2}H{sub 2} gas at 700 °C. The synthesized CNTs exhibited good crystallinity and a vertically aligned morphology. The vertically aligned CNTs (VACNTs) were patterned with a honeycomb configuration using photolithography and characterized using field emission (FE) applications. Owing to the electric field concentration, the FE current density of VACNTs with honeycomb configuration was higher than that of the un-patterned VACNTs. Ti was coated onto the VACNT surface utilizing the relatively lower work function property to enhance the FE current density. The FE current density reached up to 7.0 mA/cm{sup 2} at an applied electric field of 2.5 V/μm. A fluorescent screen was monitored to demonstrate uniform FE VACNTs with a honeycomb configuration. The designed field emitter provided an admirable example for FE applications.

  15. Surface reconstructions and transport of epitaxial PtLuSb (001) thin films grown by MBE

    Science.gov (United States)

    Patel, Sahil J.; Logan, John A.; Harrington, Sean D.; Schultz, Brian D.; Palmstrøm, Chris J.

    2016-02-01

    This work presents the surface reconstructions and transport properties of the topological insulator PtLuSb grown on Al0.1In0.9Sb/GaAs (001). Two stable surface reconstructions, (1×3) and c(2×2), were observed on PtLuSb (001) surfaces. Antimony-dimerization was determined to be the nature of the (1×3) surface reconstruction as evidenced by chemical binding energy shifts in the antimony 4d core-level for surface bonding components. The two surface reconstructions were studied as a function of Sb4 overpressure and substrate temperature to create a reconstruction phase diagram. From this reconstruction phase diagram, a growth window from 320 °C to 380 °C using an antimony overpressure was identified. Within this window, the highest quality films were grown at a growth temperature of 380 °C. These films exhibited lower p-type carrier concentrations as well as relatively high hole mobilities.

  16. Optical and mechanical characterization of zirconia-carbon nanocomposite films

    International Nuclear Information System (INIS)

    The focus of the present work is the study of carbon co-deposition effect on the optical and mechanical properties of zirconia films. Optical and dielectric constant, band gap and transition lifetime of such composite systems were determined, as well as their elasticity properties. The thin ZrO2-x-C films were sputter-deposited on silicon and polycarbonate, from a pure ZrO2 and graphite targets in a radio-frequency argon plasma. Besides the zirconia phase and crystalline parameter changes induced by carbon addition, the electronic properties to the films were significantly modified: a drastical optical gap lowering was observed along an increased electronic dielectric constant and refractive index. The invariance of the film elasticity modulus and the similarity of the optical transition lifetime values with those of pure amorphous carbon films indicate an immiscibility of the ceramic and carbon components of the film structure

  17. Optical and mechanical characterization of zirconia-carbon nanocomposite films

    Energy Technology Data Exchange (ETDEWEB)

    Laidani, N. [ITC-IRST, Divisione Fisica-Chimica delle Superfici ed Interfacce, Via Sommarive 18, 38050 Povo (Trento) (Italy)], E-mail: laidani@itc.it; Micheli, V.; Bartali, R.; Gottardi, G.; Anderle, M. [ITC-IRST, Divisione Fisica-Chimica delle Superfici ed Interfacce, Via Sommarive 18, 38050 Povo (Trento) (Italy)

    2008-02-15

    The focus of the present work is the study of carbon co-deposition effect on the optical and mechanical properties of zirconia films. Optical and dielectric constant, band gap and transition lifetime of such composite systems were determined, as well as their elasticity properties. The thin ZrO{sub 2-x}-C films were sputter-deposited on silicon and polycarbonate, from a pure ZrO{sub 2} and graphite targets in a radio-frequency argon plasma. Besides the zirconia phase and crystalline parameter changes induced by carbon addition, the electronic properties to the films were significantly modified: a drastical optical gap lowering was observed along an increased electronic dielectric constant and refractive index. The invariance of the film elasticity modulus and the similarity of the optical transition lifetime values with those of pure amorphous carbon films indicate an immiscibility of the ceramic and carbon components of the film structure.

  18. Dynamic scaling and optical properties of Zn(S, O,OH) thin film grown by chemical bath deposition

    Institute of Scientific and Technical Information of China (English)

    Zhang Yi; Li Bo-Yan; Dang Xiang-Yu; Wu Li; Jin Jing; Li Feng-Yan; Ao Jian-Ping; Sun Yun

    2011-01-01

    The scaling behavior and optical properties of Zn(S,O and OH) thin films deposited on soda-lime glass substrates by chemical bath deposition method were studied by combined roughness measurements,scanning electron microscopy and optical properties measurement.From the scaling behaviour,the value of growth scaling exponent β,0.38±0.06,was determined.This value indicated that the Zn(S,O,OH) film growth in the heterogeneous process was influenced by the surface diffusion and shadowing effect.Results of the optical properties measurements disclosed that the transmittance of the film was in the region of 70%-88% and the optical properties of the film grown for 40 min were better than those grown under other conditions.The energy band gap of the film deposited with 40 min was around 3.63 eV.

  19. ELECTROCHEMICAL INVESTIGATION ON CARBON NANOTUBE FILM WITH DIFFERENT PRETREATMENTS

    Institute of Scientific and Technical Information of China (English)

    C.G. Hu; W.L. Wang; Y. Ma; W. Zhu

    2003-01-01

    Wide potential windows were found at carbon nanotube film electrodes in neutral solutions after being treated with nitric acid and mixed acid. Electrochemical reversibility was investigated at carbon nanotube films with different pretreatments for ferri/ferrocyanide and quinone /hydroquinone. Carbon nanotube film electrodes presented quasi-reversible electrochemical behavior for both electrolytes. In the range of scan rate, carbon nanotube film electrodes treated with acids showed heterogeneous electron-transfer properties, which was mainly controlled by its electron state density on the surface of the film. On the whole, the carbon nanotube electrode with nitric acid treatment presented the best electrochemical behaviors, so we chose it as an analytical electrode to determine the trace compound in dilute solution. The results demonstrated that this new electrode material exhibits superior performance characteristics for the detection of azide anion.

  20. Comparative study on the thickness-dependent properties of ITO and GZO thin films grown on glass and PET substrates

    International Nuclear Information System (INIS)

    The thickness-dependent properties of amorphous Sn-doped In2O3 (ITO) and polycrystalline Ga-doped ZnO (GZO) films grown on polyethylene terephthalate (PET) with a polymeric hard coating were compared with those deposited on Corning glass. The film thickness varied from 20 to 1310 nm. The electrical properties of the ITO films on PET were almost similar to those of the ITO films on glass. On the other hand, GZO films showed slightly poorer electrical properties when deposited on PET, but the difference was marginal. The electrical properties of amorphous ITO films were independent of film thickness, but polycrystalline GZO films exhibited monotonically improving behavior with increasing thickness, mainly due to enhanced crystallinity and increased grain size with increasing film thickness. Although the air-referenced transmittance spectra of films on PET were about 2 - 3% lower than those on glass due to the lower transmittance of PET, the substrate-referenced optical transmittances of films on PET were higher than those on glass, reflecting the somewhat coarse structure of films on PET. Both the ITO and the GZO films on PET with a polymeric hard coating were shown to yield properties comparable to those of both films on glass.

  1. Characterization of AISI 1005 corrosion films grown under cyclic voltammetry of low sulfide ion concentrations

    International Nuclear Information System (INIS)

    Highlights: •The corrosion of AISI 1005 in sulfide solutions was investigated. •The mechanism of film growth on carbon steel in sulfide solutions was studied. •Film growth was characterized using SEM, EDX, XRD and Mössbauer spectroscopy. •Growth of AISI 1005 corrosion films under cyclic voltammetry. -- Abstract: The mechanism of AISI 1005 corrosion in sulfide ion solutions has been investigated using cyclic voltammetry, electrochemical impedance spectroscopy, X-ray diffraction (XRD) and Mössbauer spectroscopy (MS). The proposed mechanism occurs with the initial formation of oxygenated ferrous species followed by adsorption of HS− species, precipitation of iron monosulfides and their partial conversion to bisulfide iron. This mechanism was demonstrated by XRD results that revealed Fe-O and Fe-S phases and by MS results that detected pyrite as the major proportion (94%) of the iron species in the corrosion product

  2. The Surface Interface Characteristics of Vertically Aligned Carbon Nanotube and Graphitic Carbon Fiber Arrays Grown by Thermal and Plasma Enhanced Chemical Vapor Deposition

    Science.gov (United States)

    Delzeit, Lance; Nguyen, Cattien; Li, Jun; Han, Jie; Meyyappan, M.

    2002-01-01

    The development of nano-arrays for sensors and devices requires the growth of arrays with the proper characteristics. One such application is the growth of vertically aligned carbon nanotubes (CNTs) and graphitic carbon fibers (GCFs) for the chemical attachment of probe molecules. The effectiveness of such an array is dependent not only upon the effectiveness of the probe and the interface between that probe and the array, but also the array and the underlaying substrate. If that array is a growth of vertically aligned CNTs or GCFs then the attachment of that array to the surface is of the utmost importance. This attachment provides the mechanical stability and durability of the array, as well as, the electrical properties of that array. If the detection is to be acquired through an electrical measurement, then the appropriate resistance between the array and the surface need to be fabricated into the device. I will present data on CNTs and GCFs grown from both thermal and plasma enhanced chemical vapor deposition. The focus will be on the characteristics of the metal film from which the CNTs and GCFs are grown and the changes that occur due to changes within the growth process.

  3. Grain size dependent mechanical properties of nanocrystalline diamond films grown by hot-filament CVD

    Energy Technology Data Exchange (ETDEWEB)

    Wiora, M; Bruehne, K; Floeter, A; Gluche, P; Willey, T M; Kucheyev, S O; Van Buuren, A W; Hamza, A V; Biener, J; Fecht, H

    2008-08-01

    Nanocrystalline diamond (NCD) films with a thickness of {approx}6 {micro}m and with average grain sizes ranging from 60 to 9 nm were deposited on silicon wafers using a hot-filament chemical vapor deposition (HFCVD) process. These samples were then characterized with the goal to identify correlations between grain size, chemical composition and mechanical properties. The characterization reveals that our films are phase pure and exhibit a relatively smooth surface morphology. The levels of sp{sup 2}-bonded carbon and hydrogen impurities are low, and showed a systematic variation with the grain size. The hydrogen content increases with decreasing grain size, whereas the sp{sup 2} carbon content decreases with decreasing grain size. The material is weaker than single crystalline diamond, and both stiffness and hardness decrease with decreasing grain size. These trends suggest gradual changes of the nature of the grain boundaries, from graphitic in the case of the 60 nm grain size material to hydrogen terminated sp{sup 3} carbon for the 9 nm grain size material. The films exhibit low levels of internal stress and freestanding structures with a length of several centimeters could be fabricated without noticeable bending.

  4. Non-vacuum growth of graphene films using solid carbon source

    Energy Technology Data Exchange (ETDEWEB)

    Nguyen, Ba-Son [Department of Mechanical Engineering, National Cheng Kung University, 1 University Road, Tainan 701, Taiwan (China); Faculty of Mechatronics – Electronics, Lac Hong University, 10 Huynh Van Nghe Road, Bienhoa (Viet Nam); Lin, Jen-Fin, E-mail: jflin@mail.ncku.edu.tw, E-mail: dcperng@ee.ncku.edu.tw [Department of Mechanical Engineering, National Cheng Kung University, 1 University Road, Tainan 701, Taiwan (China); Center for Micro/Nano Science and Technology, National Cheng Kung University, 1 University Road, Tainan 701, Taiwan (China); Perng, Dung-Ching, E-mail: jflin@mail.ncku.edu.tw, E-mail: dcperng@ee.ncku.edu.tw [Center for Micro/Nano Science and Technology, National Cheng Kung University, 1 University Road, Tainan 701, Taiwan (China); Institute of Microelectronics and Electrical Engineering Department, National Cheng Kung University, 1 University Road, Tainan 701, Taiwan (China)

    2015-06-01

    This study demonstrates that air annealing can grow high-quality graphene films on the surface of polycrystalline nickel film with the help of an effective SiO{sub 2} capping layer. The number of graphene layers can be modulated by the amount of carbon embedded in the Ni film before annealing. Raman analysis results, transmission electron microscopy images, and electron diffraction patterns of the samples confirm that graphene films can be grown in air with an oxygen blocking layer and a 10 °C/s cooling rate in an open-vented rapid thermal annealing chamber or an open tube furnace. The high-quality low-defect air-annealing grown graphene is comparable to commercially available graphene grown via chemical vapor deposition. The proposed graphene growth using air annealing technique is simple and low-cost, making it highly attractive for mass production. It is transfer-free to a silicon substrate and can speed up graphene development, opening up new applications.

  5. Structural and optical characterization of ZrO2 thin films grown on silicon and quartz substrates

    Science.gov (United States)

    Hojabri, Alireza

    2016-09-01

    Zirconium oxide thin films were grown successfully by thermal annealing of zirconium thin films deposited on quartz and silicon substrates by direct current magnetron sputtering technique. The structural and optical properties in relation to thermal annealing times were investigated. The X-ray diffraction patterns revealed that structure of films changes from amorphous to crystalline by increase of annealing times in range 60-240 min. The composition of films was determined by Rutherford back scattering spectroscopy. Atomic force microscopy results exhibited that surface morphology and roughness of films depend on the annealing time. The refractive index of the films was calculated using Swanepoel's method. The optical band gap energy of annealed films decreased from 5.50 to 5.34 eV with increasing thermal annealing time.

  6. Poly(lactide-co-trimethylene carbonate) and Polylactide/Polytrimethylene Carbonate Blown Films

    OpenAIRE

    Li, Hongli; Chang, Jiangping; Qin, Yuyue; Wu, Yan; Yuan, Minglong; Zhang, Yingjie

    2014-01-01

    In this work, poly(lactide-co-trimethylene carbonate) and polylactide/ polytrimethylene carbonate films are prepared using a film blowing method. The process parameters, including temperature and screw speed, are studied, and the structures and properties of the P(LA-TMC) and PLA/PTMC films are investigated. The scanning electron microscope (SEM) images show that upon improving the content of TMC and PTMC, the lamellar structures of the films are obviously changed. With increasing TMC monomer...

  7. A kinetic model for stress generation in thin films grown from energetic vapor fluxes

    Science.gov (United States)

    Chason, E.; Karlson, M.; Colin, J. J.; Magnfält, D.; Sarakinos, K.; Abadias, G.

    2016-04-01

    We have developed a kinetic model for residual stress generation in thin films grown from energetic vapor fluxes, encountered, e.g., during sputter deposition. The new analytical model considers sub-surface point defects created by atomic peening, along with processes treated in already existing stress models for non-energetic deposition, i.e., thermally activated diffusion processes at the surface and the grain boundary. According to the new model, ballistically induced sub-surface defects can get incorporated as excess atoms at the grain boundary, remain trapped in the bulk, or annihilate at the free surface, resulting in a complex dependence of the steady-state stress on the grain size, the growth rate, as well as the energetics of the incoming particle flux. We compare calculations from the model with in situ stress measurements performed on a series of Mo films sputter-deposited at different conditions and having different grain sizes. The model is able to reproduce the observed increase of compressive stress with increasing growth rate, behavior that is the opposite of what is typically seen under non-energetic growth conditions. On a grander scale, this study is a step towards obtaining a comprehensive understanding of stress generation and evolution in vapor deposited polycrystalline thin films.

  8. Magnetic and structural properties of Co2FeAl thin films grown on Si substrate

    Science.gov (United States)

    Belmeguenai, Mohamed; Tuzcuoglu, Hanife; Gabor, Mihai; Petrisor, Traian; Tiusan, Coriolan; Berling, Dominique; Zighem, Fatih; Mourad Chérif, Salim

    2015-01-01

    The correlation between magnetic and structural properties of Co2FeAl (CFA) thin films of different thicknesses (10 nmgrown at room temperature on MgO-buffered Si/SiO2 substrates and annealed at 600 °C has been studied. x-ray diffraction (XRD) measurements revealed an (011) out-of-plane textured growth of the films. The deduced lattice parameter increases with the film thickness. Moreover, pole figures showed no in-plane preferential growth orientation. The magneto-optical Kerr effect hysteresis loops showed the presence of a weak in-plane uniaxial anisotropy with a random easy axis direction. The coercive field, measured with the applied field along the easy axis direction, and the uniaxial anisotropy field increase linearly with the inverse of the CFA thickness. The microstrip line ferromagnetic resonance measurements for in-plane and perpendicular applied magnetic fields revealed that the effective magnetization and the uniaxial in-plane anisotropy field follow a linear variation versus the inverse CFA thickness. This allows deriving a perpendicular surface anisotropy coefficient of -1.86 erg/cm2.

  9. Low-temperature-grown continuous graphene films from benzene by chemical vapor deposition at ambient pressure

    Science.gov (United States)

    Jang, Jisu; Son, Myungwoo; Chung, Sunki; Kim, Kihyeun; Cho, Chunhum; Lee, Byoung Hun; Ham, Moon-Ho

    2015-12-01

    There is significant interest in synthesizing large-area graphene films at low temperatures by chemical vapor deposition (CVD) for nanoelectronic and flexible device applications. However, to date, low-temperature CVD methods have suffered from lower surface coverage because micro-sized graphene flakes are produced. Here, we demonstrate a modified CVD technique for the production of large-area, continuous monolayer graphene films from benzene on Cu at 100-300 °C at ambient pressure. In this method, we extended the graphene growth step in the absence of residual oxidizing species by introducing pumping and purging cycles prior to growth. This led to continuous monolayer graphene films with full surface coverage and excellent quality, which were comparable to those achieved with high-temperature CVD; for example, the surface coverage, transmittance, and carrier mobilities of the graphene grown at 300 °C were 100%, 97.6%, and 1,900-2,500 cm2 V-1 s-1, respectively. In addition, the growth temperature was substantially reduced to as low as 100 °C, which is the lowest temperature reported to date for pristine graphene produced by CVD. Our modified CVD method is expected to allow the direct growth of graphene in device manufacturing processes for practical applications while keeping underlying devices intact.

  10. Ag films grown by remote plasma enhanced atomic layer deposition on different substrates

    Energy Technology Data Exchange (ETDEWEB)

    Amusan, Akinwumi A., E-mail: akinwumi.amusan@ovgu.de; Kalkofen, Bodo; Burte, Edmund P. [Institute of Micro and Sensor Systems, Otto-von-Guericke University, Universitätsplatz 2, 39106 Magdeburg (Germany); Gargouri, Hassan; Wandel, Klaus; Pinnow, Cay [SENTECH Instruments GmbH, Schwarzschildstraße 2, 12489 Berlin (Germany); Lisker, Marco [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany)

    2016-01-15

    Silver (Ag) layers were deposited by remote plasma enhanced atomic layer deposition (PALD) using Ag(fod)(PEt{sub 3}) (fod = 2,2-dimethyl-6,6,7,7,8,8,8-heptafluorooctane-3,5-dionato) as precursor and hydrogen plasma on silicon substrate covered with thin films of SiO{sub 2}, TiN, Ti/TiN, Co, Ni, and W at different deposition temperatures from 70  to 200 °C. The deposited silver films were analyzed by x-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), scanning electron microscopy (SEM), transmission electron microscopy (TEM) with energy dispersive x-ray spectroscopy, four point probe measurement, ellipsometric measurement, x-ray fluorescence (XRF), and x-ray diffraction (XRD). XPS revealed pure Ag with carbon and oxygen contamination close to the detection limit after 30 s argon sputtering for depositions made at 120 and 200 °C substrate temperatures. However, an oxygen contamination was detected in the Ag film deposited at 70 °C after 12 s argon sputtering. A resistivity of 5.7 × 10{sup −6} Ω cm was obtained for approximately 97 nm Ag film on SiO{sub 2}/Si substrate. The thickness was determined from the SEM cross section on the SiO{sub 2}/Si substrate and also compared with XRF measurements. Polycrystalline cubic Ag reflections were identified from XRD for PALD Ag films deposited at 120 and 200 °C. Compared to W surface, where poor adhesion of the films was found, Co, Ni, TiN, Ti/TiN and SiO{sub 2} surfaces had better adhesion for silver films as revealed by SEM, TEM, and AFM images.

  11. Ag films grown by remote plasma enhanced atomic layer deposition on different substrates

    International Nuclear Information System (INIS)

    Silver (Ag) layers were deposited by remote plasma enhanced atomic layer deposition (PALD) using Ag(fod)(PEt3) (fod = 2,2-dimethyl-6,6,7,7,8,8,8-heptafluorooctane-3,5-dionato) as precursor and hydrogen plasma on silicon substrate covered with thin films of SiO2, TiN, Ti/TiN, Co, Ni, and W at different deposition temperatures from 70  to 200 °C. The deposited silver films were analyzed by x-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), scanning electron microscopy (SEM), transmission electron microscopy (TEM) with energy dispersive x-ray spectroscopy, four point probe measurement, ellipsometric measurement, x-ray fluorescence (XRF), and x-ray diffraction (XRD). XPS revealed pure Ag with carbon and oxygen contamination close to the detection limit after 30 s argon sputtering for depositions made at 120 and 200 °C substrate temperatures. However, an oxygen contamination was detected in the Ag film deposited at 70 °C after 12 s argon sputtering. A resistivity of 5.7 × 10−6 Ω cm was obtained for approximately 97 nm Ag film on SiO2/Si substrate. The thickness was determined from the SEM cross section on the SiO2/Si substrate and also compared with XRF measurements. Polycrystalline cubic Ag reflections were identified from XRD for PALD Ag films deposited at 120 and 200 °C. Compared to W surface, where poor adhesion of the films was found, Co, Ni, TiN, Ti/TiN and SiO2 surfaces had better adhesion for silver films as revealed by SEM, TEM, and AFM images

  12. Characterization for rbs of Titanium Oxide thin films grown by Dip Coating in a coloidal suspension of nano structured Titanium Oxide

    International Nuclear Information System (INIS)

    The depth of Titanium Oxide thin films grown by Dip Coating in a coloidal suspension of nano structured Titanium Oxide was characterized using Rutherford Backscattering Spectrometry. Film depths are compared in function of bath and suspension parameters

  13. Effect of silane flow rate on structural, electrical and optical properties of silicon thin films grown by VHF PECVD technique

    International Nuclear Information System (INIS)

    Hydrogenated silicon thin films deposited by VHF PECVD process for various silane flow rates have been investigated. The silane flow rate was varied from 5 sccm to 30 sccm, maintaining all other parameters constant. The electrical, structural and optical properties of these films were systematically studied as a function of silane flow rate. These films were characterized by Raman spectroscopy, Scanning Electron Microscopy (SEM), atomic force microscopy (AFM), Fourier transform infrared (FTIR) spectroscopy and UV–visible (UV–Vis) spectroscopy. Different crystalline volume fraction (22%–60%) and band gap (∼1.58 eV–∼1.96 eV) were achieved for silicon thin films by varying the silane concentration. A transition from amorphous to nanocrystalline silicon has been confirmed by Raman and FTIR analysis. The film grown at this transition region shows the high conductivity in the order of 10−4 Ω−1 cm−1. - Highlights: • Silicon films grown using VHF PECVD at various Fsilane (silane flow rate). • Amorphous to nanocrystalline silicon transition at Fsilane ∼5 sccm–10 sccm. • Deposition rate increases with the increase of Fsilane. • Powder formation occurred beyond 20 sccm of Fsilane. • Film grown at 20 sccm shows max. crystalline fraction ∼60% with Eg ∼1.58 eV

  14. Electrical and mechanical stability of aluminum-doped ZnO films grown on flexible substrates by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Luka, G., E-mail: gluka@ifpan.edu.pl [Institute of Physics, Polish Academy of Sciences, Warsaw (Poland); Witkowski, B.S.; Wachnicki, L.; Jakiela, R. [Institute of Physics, Polish Academy of Sciences, Warsaw (Poland); Virt, I.S. [University of Rzeszow, Rzeszow (Poland); Drohobych Ivan Franko State Pedagogical University, Drohobych (Ukraine); Andrzejczuk, M.; Lewandowska, M. [Faculty of Materials Science and Engineering, Warsaw University of Technology, Warsaw (Poland); Godlewski, M. [Institute of Physics, Polish Academy of Sciences, Warsaw (Poland); Department of Mathematics and Natural Sciences, College of Science, Cardinal Stefan Wyszynski University, Warsaw (Poland)

    2014-08-01

    Highlights: • Transparent and conductive ZnO:Al films were grown by atomic layer deposition. • The films were grown on flexible substrates at low growth temperatures (110–140 °C). • So-obtained films have low resistivities, of the order of 10{sup −3} Ω cm. • Bending tests indicated a critical bending radius of ≈1.2 cm. • Possible sources of the film resistivity changes upon bending are proposed. - Abstract: Aluminum-doped zinc oxide (AZO) films were grown on polyethylene terephthalate (PET) substrates by atomic layer deposition (ALD) at low deposition temperatures (110–140 °C). The films have low resistivities, ∼10{sup −3} Ω cm, and high transparency (∼90%) in the visible range. Bending tests indicated a critical bending radius of ≈1.2 cm, below which the resistivity changes became irreversible. The films deposited on PET with additional buffer layer are more stable upon bending and temperature changes.

  15. Delafossite CuFeO2 thin films electrochemically grown from a DMSO based solution

    International Nuclear Information System (INIS)

    Highlights: • A detailed electrochemical study about the electrodeposition of CuFeO2 from DMSO solution is presented. • The use of a precise quantity of chloride ion as complexing agent is decisive in order to obtain stoichiometric compounds (Cu:Fe ratio 1:1). • As-grown compounds were amorphous. Thus, a thermal treatment was required in order to obtain crystalline CuFeO2 with delafossite structure. • The formation of CuFeO2 was confirmed by XRD and XPS analyses. • Through optical measurements, four absorption in different spectrum regions were characterized: A IR absorption (Eg(IR) = 1.64 eV), two visible absorptions (Egdir(vis) = 2.35 eV, and Egind(vis) = 2.03 eV) and an UV absorption (Egind(UV) = 3.37 eV). - Abstract: This study shows the results obtained in the direct electrodeposition of CuFeO2 thin films from a DMSO based solution. First, a detailed electrochemical study was carried out in order to determinate the best condition for the CuFeO2 electrodeposition. The films were obtained potentiostatically from a 0.01 M CuCl2 + 0.005 M Fe(ClO4)3 + 0.1 M LiClO4 solution in the presence of molecular oxygen at 50 °C onto FTO/glass substrates. In all cases, the time of electrodeposition was 1000 s. The grown films presented a yellow-reddish color and exhibit an homogeneous aspect. Analyses of composition carried out through EDS, shown that a stoichiometric composition (atomic relation Cu:Fe = 1:1) is obtained at a potential of –0.6 V. However, as-grown films analyzed through XRD experiences did not evidence the presence of CuFeO2 compound presumably because it is amorphous. An annealing treatment at 650° C for 30 minutes in an argon atmosphere was necessary to transform the solid phase of the as grown films in crystalline CuFeO2. Furthermore, the presence of CuFeO2 has been confirmed through XPS analyses. UV-vis analyzes shown a ladder-like appearance due to the presence of several absorption edges from the IR to the UV spectrum region. The most

  16. Structural and interfacial characteristics of thin (2 films grown by electron cyclotron resonance plasma oxidation on [100] Si substrates

    International Nuclear Information System (INIS)

    The feasibility of fabricating ultra-thin SiO2 films on the order of a few nanometer thickness has been demonstrated. SiO2 thin films of approximately 7 nm thickness have been produced by ion flux-controlled Electron Cyclotron Resonance plasma oxidation at low temperature on [100] Si substrates, in reproducible fashion. Electrical measurements of these films indicate that they have characteristics comparable to those of thermally grown oxides. The thickness of the films was determined by ellipsometry, and further confirmed by cross-sectional High-Resolution Transmission Electron Microscopy. Comparison between the ECR and the thermal oxide films shows that the ECR films are uniform and continuous over at least a few microns in lateral direction, similar to the thermal oxide films grown at comparable thickness. In addition, HRTEM images reveal a thin (1--1.5 nm) crystalline interfacial layer between the ECR film and the [100] substrate. Thinner oxide films of approximately 5 nm thickness have also been attempted, but so far have resulted in nonuniform coverage. Reproducibility at this thickness is difficult to achieve

  17. Carbon nitride films by RF plasma assisted PLD: Spectroscopic and electronic analysis

    International Nuclear Information System (INIS)

    Carbon nitride (CNx) thin films have been grown on Si by 193 nm ArF ns pulsed laser ablation of a pure graphite target in a low pressure atmosphere of a RF generated N2 plasma and compared with samples grown by PLD in pure nitrogen atmosphere. Composition, structure and bonding of the deposited materials have been evaluated by X-ray photoelectron spectroscopy (XPS), and Raman scattering. Significant chemical and micro-structural changes have been registered, associated to different nitrogen incorporation in the two types of films analyzed. The intensity of the reactive activated species is, indeed, increased by the presence of the bias confined RF plasma, as compared to the bare nitrogen atmosphere, thus resulting in a different nitrogen uptake in the growing films. The process has been also investigated by some preliminary optical emission studies of the carbon plume expanding in the nitrogen atmosphere. Optical emission spectroscopy reveals the presence of many excited species like C+ ions, C atoms, C2, N2; and CN radicals, and N2+ molecular ions, whose relative intensity appears to be increased in the presence of the RF plasma. The films were also characterised for electrical properties by the 'four-probe-test method' determining sheet resistivity and correlating surface conductivity with chemical composition.

  18. Structural and Magnetic Phase Transitions in Manganese Arsenide Thin-Films Grown by Molecular Beam Epitaxy

    Science.gov (United States)

    Jaeckel, Felix Till

    Phase transitions play an important role in many fields of physics and engineering, and their study in bulk materials has a long tradition. Many of the experimental techniques involve measurements of thermodynamically extensive parameters. With the increasing technological importance of thin-film technology there is a pressing need to find new ways to study phase transitions at smaller length-scales, where the traditional methods are insufficient. In this regard, the phase transitions observed in thin-films of MnAs present interesting challenges. As a ferromagnetic material that can be grown epitaxially on a variety of technologically important substrates, MnAs is an interesting material for spintronics applications. In the bulk, the first order transition from the low temperature ferromagnetic alpha-phase to the beta-phase occurs at 313 K. The magnetic state of the beta-phase has remained controversial. A second order transition to the paramagnetic gamma-phase takes place at 398 K. In thin-films, the anisotropic strain imposed by the substrate leads to the interesting phenomenon of coexistence of alpha- and beta-phases in a regular array of stripes over an extended temperature range. In this dissertation these phase transitions are studied in films grown by molecular beam epitaxy on GaAs (001). The films are confirmed to be of high structural quality and almost purely in the A0 orientation. A diverse set of experimental techniques, germane to thin-film technology, is used to probe the properties of the film: Temperature-dependent X-ray diffraction and atomic-force microscopy (AFM), as well as magnetotransport give insights into the structural properties, while the anomalous Hall effect is used as a probe of magnetization during the phase transition. In addition, reflectance difference spectroscopy (RDS) is used as a sensitive probe of electronic structure. Inductively coupled plasma etching with BCl3 is demonstrated to be effective for patterning MnAs. We show

  19. Enhanced Carrier Generation in Nb-Doped SnO2 Thin Films Grown on Strain-Inducing Substrates

    Science.gov (United States)

    Nakao, Shoichiro; Yamada, Naoomi; Hirose, Yasushi; Hasegawa, Tetsuya

    2012-06-01

    We report the effect of lattice strain from the substrate on carrier generation in Nb-doped SnO2 (NTO) transparent conductive oxide (TCO) thin films. The carrier activation efficiency of Nb was strongly affected by in-plane tensile strain, and the NTO films grown on c-Al2O3 and anatase TiO2 seed layers had carrier density (ne) as high as 3×1020 cm-3. In contrast, strain-free NTO films grown on glass exhibited much smaller ne due to the formation of deep impurity levels. These results imply that NTO has potential as a practical TCO in the presence of substrate-film epitaxial interaction.

  20. Injection Molding of Polystyrene Matrix Composites Filled with Vapor Grown Carbon Fiber

    Science.gov (United States)

    Enomoto, Kazuki; Yasuhara, Toshiyuki; Ohtake, Naoto; Kato, Kazunori

    Vapor grown carbon fiber (VGCF) is a kind of carbon nanotube (CNT), which has outstanding properties such as high mechanical strength and high electrical conductivity. In this study, injection molding properties of polystyrene (PS) filled with VGCF and evaluation of mechanical and electrical properties are discussed in comparison with composites in which conventional carbon fillers were filled. As a result, volume resistivity of VGCF/PS composites dropped significantly between VGCF concentration of 3 and 4vol.%. Resistivity of the composites filled with VGCF was 1.2×102Ω·cm when VGCF concentration was 11.6vol.%. The resistivity was significantly lower than that of composites which were filled with conventional carbon fillers. The elastic modulus slightly increases with increasing VGCF concentration, whereas the tensile strength slightly decreases in the VGCF concentration in the range from 0 to 12vol.%.

  1. Evidences for liquid encapsulation in PMMA ultra-thin film grown by liquid injection Photo-CVD

    OpenAIRE

    Manole, Claudiu Constantin; Marsan, Olivier; Charvillat, Cédric; Demetrescu, Ioana; Maury, Francis

    2013-01-01

    This paper deals with the characterization of ultra-thin films of PMMA grown by an original photoassisted Chemical Vapor Deposition process equipped with a pulsed liquid injection system to deliver the monomer. The nanometric thick films showed a good ability to encapsulate a liquid phase as microdroplets protected by a thin polymeric tight membrane in the form of blisters. Techniques that are capable to analyze these heterogeneous structures at micro- and nanoscopic scale such as Raman Confo...

  2. Superconducting property and Fe valence state of FeSe thick films grown from high temperature solution

    International Nuclear Information System (INIS)

    Highlights: → Thick FeSe films (1-2 μm) of pure β-phase were grown from high temperature solution with SeSn as flux. → Electron backscatter diffraction showed the films of high crystallinity. → Superconducting transition was observed with onset Tc of 6.1 K for as-grown films and rising to 6.9 K after post-growth annealing at 400 deg. C. → X-ray photoelectron spectroscopy showed that Fe had two valence states in FeSe and their ratio may have some correlation with the critical temperature. - Abstract: Thick FeSe films (1-2 μm) were grown from high temperature solution with SeSn as the flux. Electron backscatter diffraction confirmed the films of tetragonal β phase with high crystallinity. Superconducting transition was observed by magnetic measurements, with the onset Tc of 6.1 K for the as-grown films and rising to 6.9 K after post-growth annealing at 400 deg. C, which was still 1.5 K lower than the sintered powder samples. X-ray photoelectron spectroscopy showed that the Fe 2p3/2 binding energy in the FeSe compound was composed of two peaks at 707.8 eV and 706.6 eV, respectively. The former was close to the value of Fe in polarized ionic bonds, while the later had the typical value in metallic bondings. The ratio of the two bondings was 1.56 and 1.94 for the films and sintered powders, respectively. The critical temperature may have some correlation with the ratio of the two bondings. A lower average Fe valence was probably the cause for the lower Tc observed in thick films.

  3. TEM characterization of organic nanocrystals grown in sol-gel thin films

    International Nuclear Information System (INIS)

    The tetracene molecule (2,3-benzanthracene, C8H12) was used to synthesize nanocrystals grown in sol-gel thin films, ranging from 10 to 100 nm of diameter. This confined nucleation and growth was compared to microcrystallizations of the same molecule in free solution. Transmission electron microscopy (TEM) was used to characterize these two kinds of tetracene crystals. The observation was performed under low-dose illumination to avoid amorphization of the samples during electron irradiation. Spatial confinement and size distribution of micro- and nanocrystals were compared. Using electron microdiffraction and diffraction patterns simulations, we showed that free microcrystals and nanocrystals confined in gel glasses exhibit the same triclinic P-bar 1 structure. In addition, time-resolved spectroscopy was used to record fluorescence decays, showing a monoexponential fluorescence decay for nanocrystals while microcrystals exhibit a multiexponential decay. The simple signature of nanocrystals luminescence is promising for the future development of chemical or biological sensors

  4. Surface phonon polariton characteristics of wurtzite ZnO thin film grown on silicon substrate

    Energy Technology Data Exchange (ETDEWEB)

    Ng, Sha Shiong; Ooi, Poh Kok; Lee, Sai Cheong; Abdullah, Mat Johar; Hassan, Zainuriah; Hassan, Haslan Abu [Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Penang (Malaysia)

    2012-05-15

    In this work, p-polarized far infrared attenuated total reflection (ATR) with Otto configuration technique is employed to study the surface phonon polariton (SPP) characteristics of wurtzite ZnO thin film grown on Si(111) substrate. One prominent dip corresponding to the leaky SPP mode of the ZnO is detected at 532 cm{sup -1}. The obtained result is in good agreement with the calculated ATR spectrum simulated based on the transfer matrix formulation. The origin of the observed dip is verified with the surface polariton dispersion curves based on a three anisotropic layer model (air-ZnO-Si). The results also reveal that the real SPP and the interface phonon polariton modes for this studied structure are barely observable experimentally. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  5. High electron mobility in Ga(In)NAs films grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    We report the highest mobility values above 2000 cm2/Vs in Si doped GaNAs film grown by molecular beam epitaxy. To understand the feature of the origin which limits the electron mobility in GaNAs, temperature dependences of mobility were measured for high mobility GaNAs and referential low mobility GaInNAs. Temperature dependent mobility for high mobility GaNAs is similar to the GaAs case, while that for low mobility GaInNAs shows large decrease in lower temperature region. The electron mobility of high quality GaNAs can be explained by intrinsic limiting factor of random alloy scattering and extrinsic factor of ionized impurity scattering.

  6. Vortex oscillations in TFA-grown YBCO thin-films with BZO nanoparticles

    International Nuclear Information System (INIS)

    An ac susceptibility methodology has been applied to investigate the vortex dynamics of YBa2Cu3O7-x-BaZrO3 nanocomposites grown by the chemical solution deposition TFA route, close to the irreversibility line. By analysing the linear, non-dissipative Campbell regime at low ac fields, we determined the temperature and field dependence of the restoring pinning constant, αL(Hdc, T), characterising the harmonic oscillation of vortices inside their potential wells. Different than standard TFA-YBCO films, BZO nanocomposites displayed increasing αL(Hdc) curves in the whole studied (Hdc, T) phase diagram, a behavior not predicted by the standard collective theory. We suggest results may be explained by the softening of the vortex-lattice, owed to the microstrain induced by the nanoparticles in the YBCO matrix.

  7. Thermal activation of nitrogen acceptors in ZnO thin films grown by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Dangbegnon, J.K.; Talla, K.; Botha, J.R. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth (South Africa)

    2010-06-15

    Nitrogen doping in ZnO is inhibited by spontaneous formation of compensating defects. Perfect control of the nitrogen doping concentration is required, since a high concentration of nitrogen could induce the formation of donor defects involving nitrogen. In this work, the effect of post-growth annealing in oxygen ambient on ZnO thin films grown by Metalorganic Chemical Vapor Deposition, using NO as both oxidant and nitrogen dopant, is studied. After annealing at 700 C and above, low-temperature photoluminescence shows the appearance of a transition at {proportional_to}3.23 eV which is interpreted as pair emission involving a nitrogen acceptor. A second transition at {proportional_to}3.15 eV is also discussed. This work suggests annealing as a potential means for p-type doping using nitrogen (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  8. Alignment of muscle precursor cells on the vertical edges of thick carbon nanotube films

    Energy Technology Data Exchange (ETDEWEB)

    Holt, Ian, E-mail: ian.holt@rjah.nhs.uk [Wolfson Centre for Inherited Neuromuscular Disease, RJAH Orthopaedic Hospital, Oswestry, Shropshire SY10 7AG (United Kingdom); Institute for Science and Technology in Medicine, Keele University, Keele, Staffordshire ST5 5BG (United Kingdom); Gestmann, Ingo, E-mail: Ingo.Gestmann@fei.com [FEI Europe B.V., Achtseweg Noord 5, 5651 Eindhoven (Netherlands); Wright, Andrew C., E-mail: a.wright@glyndwr.ac.uk [Advanced Materials Research Laboratory, Glyndwr University, Plas Coch, Mold Rd, Wrexham LL11 2AW (United Kingdom)

    2013-10-15

    The development of scaffolds and templates is an essential aspect of tissue engineering. We show that thick (> 0.5 mm) vertically aligned carbon nanotube films, made by chemical vapour deposition, can be used as biocompatible substrates for the directional alignment of mouse muscle cells where the cells grow on the exposed sides of the films. Ultra high resolution scanning electron microscopy reveals that the films themselves consist mostly of small diameter (10 nm) multi-wall carbon nanotubes of wavy morphology with some single wall carbon nanotubes. Our findings show that for this alignment to occur the nanotubes must be in pristine condition. Mechanical wiping of the films to create directional alignment is detrimental to directional bioactivity. Larger areas for study have been formed from a composite of multiply stacked narrow strips of nanotubes wipe-transferred onto elastomer supports. These composite substrates appear to show a useful degree of alignment of the cells. Highlights: • Highly oriented muscle precursor cells grown on edges of carbon nanotube pads • Mechanical treatment of nanotube pads highly deleterious to cell growth on edges • Larger areas created from wipe-transfer of narrow strips of nanotubes onto elastomer supports • Very high resolution SEM reveals clues to aligned cell growth.

  9. Alignment of muscle precursor cells on the vertical edges of thick carbon nanotube films

    International Nuclear Information System (INIS)

    The development of scaffolds and templates is an essential aspect of tissue engineering. We show that thick (> 0.5 mm) vertically aligned carbon nanotube films, made by chemical vapour deposition, can be used as biocompatible substrates for the directional alignment of mouse muscle cells where the cells grow on the exposed sides of the films. Ultra high resolution scanning electron microscopy reveals that the films themselves consist mostly of small diameter (10 nm) multi-wall carbon nanotubes of wavy morphology with some single wall carbon nanotubes. Our findings show that for this alignment to occur the nanotubes must be in pristine condition. Mechanical wiping of the films to create directional alignment is detrimental to directional bioactivity. Larger areas for study have been formed from a composite of multiply stacked narrow strips of nanotubes wipe-transferred onto elastomer supports. These composite substrates appear to show a useful degree of alignment of the cells. Highlights: • Highly oriented muscle precursor cells grown on edges of carbon nanotube pads • Mechanical treatment of nanotube pads highly deleterious to cell growth on edges • Larger areas created from wipe-transfer of narrow strips of nanotubes onto elastomer supports • Very high resolution SEM reveals clues to aligned cell growth

  10. Field Emission Properties of Ball-Like Nano-Carbon Thin Films Deposited on Mo Films with Accidented Topography

    International Nuclear Information System (INIS)

    Ball-like nano-carhon thin films (BNCTs) are grown on Mo layers by microwave plasma chemical vapour deposition (MPCVD) system. The Mo layers are deposited on ceramic substrates by electron beam deposition method and are pretreated by ultrasonically scratching. The optimization effects of ultrasonically scratching pretreat-ment on the surface micro-structures of carbon films are studied. It is found from field-emission scanning electron microscope (FE-SEM) images and Raman spectra that the surface structures of the carbon films deposited on Mo pretreated are improved, which are composed of highly uniform nano-structured carbon balls with considerable disorder structures. Field emission (FE) measurements are carried out using a diode structure. The experimental results indicate that the BNCTs exhibit good FE properties, which have the turn on field of 1.56 V/μm, and the current density of 1.0mA/cm2 at electric field of 4.0 V/μm, the uniformly distributed emission site density from a broad well-proportioned emission area of 4 cm2 are also obtained. Linearity is observed in Fowler–Nordheim (F–N) plots in higher Geld region, and the possible emission mechanism of BNCTs is discussed. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  11. The local crystallization in nanoscale diamond-like carbon films during annealing

    International Nuclear Information System (INIS)

    The local crystallization during annealing at 600 °C in nanoscale diamond-like carbon coatings films grown by pulsed vacuum-arc deposition method was observed using modern techniques of high-resolution transmission electron microscopy. The crystallites formed by annealing have a face-centred cubic crystal structure and grow in the direction [01¯1¯] as a normal to the film surface. The number and size of the crystallites depend on the initial values of the intrinsic stresses before annealing, which in turn depend on the conditions of film growth. The sizes of crystallites are 10 nm for films with initial compressive stresses of 3 GPa and 17 nm for films with initial compressive stresses of 12 GPa. Areas of local crystallization arising during annealing have a structure different from the graphite. Additionally, the investigation results of the structure of nanoscale diamond-like carbon coatings films using Raman spectroscopy method are presented, which are consistent with the transmission electron microscopy research results

  12. Nematic liquid crystalline alignment on graphitic carbon film surfaces and its electrooptical characteristics

    Science.gov (United States)

    Nakagaki, Takamitsu; Yamada, Kenji; Nakamura, Atsushi; Temmyo, Jiro; Kubono, Atsushi

    2015-09-01

    A graphitic carbon (g-C) film directly grown on a synthetic quartz glass substrate was applied to a liquid crystal (LC) device as an alignment layer combined with a transparent electrode for a demonstration of high performance. The as-grown g-C films showed a nanometer-size domain with 91.6% transmittance at 550 nm and with a sheet resistance of 5.9 kΩ/sq. The nanodomain of the g-C film surface was associated with a random orientation of the twisted nematic LC (4-pentyl-4‧-n-cyanobiphenyl, 5CB) molecules in an in-plane randomly parallel alignment that was analyzed by polarized optical microscopy (POM). We also demonstrated an LC display (LCD) in an in-plane random hybrid twisted nematic (IPR-HTN) configuration using the g-C films compared with a previously proposed configuration using a hydroxypropyl cellulose (HPC) sublayer and a TN configuration using a polyimide film with a rubbing treatment. It was found that the combined g-C alignment layer/electrode provides a low turn-on voltage, a fast response, and a wide viewing angle as an orientation sublayer and an electrode.

  13. Monitoring structural defects and crystallinity of carbon nanotubes in thin films

    Indian Academy of Sciences (India)

    S S Mahajan; M D Bambole; S P Gokhale; A B Gaikwad

    2010-03-01

    We report the influence of catalyst formulation and reaction temperature on the formation of carbon nanotube (CNT) thin films by the chemical vapour deposition (CVD) method. Thin films of CNTs were grown on Fe–Mo/Al2O3-coated silicon wafer by thermal decomposition of methane at different temperatures ranging from 800 to 1000°C. The electron microscopic investigations, SEM as well as HRTEM, of the as-grown CNT thin films revealed the growth of uniform multi-walled CNTs in abundance. The intensity ratio of D-band to G-band and FWHM of G-band through Raman measurements clearly indicated the dependency of structural defects and crystallinity of CNTs in thin films on the catalyst formulation and CVD growth temperature. The results suggest that thin films of multi-walled CNTs with negligible amount of defects in the nanotube structure and very high crystallinity can be obtained by thermal CVD process at 925°C.

  14. Synthesis of nanocrystalline Cu2ZnSnS4 thin films grown by the spray-pyrolysis technique

    International Nuclear Information System (INIS)

    Spray pyrolysis was used to deposit Cu2ZnSnS4 (CZTS) thin films on soda lime glass substrates at 300 °C. Aqueous solutions of copper chloride, zinc chloride, stannous chloride and thiourea were mixed together to form the spray liquid. The sprayed films were annealed under vacuum at 350 °C, 400 °C and 450 °C. Structural and optical characterization was performed on the CZTS films using X-ray diffraction (XRD) and UV-VIS spectrophotometry. XRD results indicate that the films are single phase nanocrystalline CZTS. Optical studies show that the optical gap values are 1.44 eV for the as-grown film and 1.46 eV, 1.48 eV and 1.49 eV for the films annealed at 350 °C, 400 °C and 450 °C, respectively

  15. Synthesis of nanocrystalline Cu2ZnSnS4 thin films grown by the spray-pyrolysis technique

    Science.gov (United States)

    Chandel, Tarun; Singh, Joginder; Rajaram, P.

    2015-08-01

    Spray pyrolysis was used to deposit Cu2ZnSnS4 (CZTS) thin films on soda lime glass substrates at 300 °C. Aqueous solutions of copper chloride, zinc chloride, stannous chloride and thiourea were mixed together to form the spray liquid. The sprayed films were annealed under vacuum at 350 °C, 400 °C and 450 °C. Structural and optical characterization was performed on the CZTS films using X-ray diffraction (XRD) and UV-VIS spectrophotometry. XRD results indicate that the films are single phase nanocrystalline CZTS. Optical studies show that the optical gap values are 1.44 eV for the as-grown film and 1.46 eV, 1.48 eV and 1.49 eV for the films annealed at 350 °C, 400 °C and 450 °C, respectively.

  16. Properties of MgB2 films grown at various temperatures by hybrid physical chemical vapour deposition

    Science.gov (United States)

    Chen, Ke; Veldhorst, Menno; Lee, Che-Hui; Lamborn, Daniel R.; DeFrain, Raymond; Redwing, Joan M.; Li, Qi; Xi, X. X.

    2008-09-01

    A hybrid physical-chemical vapour deposition (HPCVD) system consisting of separately controlled Mg-source heater and substrate heater is used to grow MgB2 thin films and thick films at various temperatures. We are able to grow superconducting MgB2 thin films at temperatures as low as 350 °C with a Tc0 of 35.5 K. MgB2 films up to 4 µm in thickness grown at 550 °C have Jc over 106 A cm-2 at 5 K and zero applied field. The low deposition temperature of MgB2 films is desirable for all-MgB2 tunnel junctions and MgB2 thick films are important for applications in coated conductors.

  17. Properties of MgB{sub 2} films grown at various temperatures by hybrid physical-chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Ke; Veldhorst, Menno; Li, Qi; Xi, X X [Department of Physics, Pennsylvania State University, University Park, PA 16802 (United States); Lee, Che-Hui; Lamborn, Daniel R; DeFrain, Raymond; Redwing, Joan M [Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802 (United States)

    2008-09-15

    A hybrid physical-chemical vapour deposition (HPCVD) system consisting of separately controlled Mg-source heater and substrate heater is used to grow MgB{sub 2} thin films and thick films at various temperatures. We are able to grow superconducting MgB{sub 2} thin films at temperatures as low as 350 deg. C with a T{sub c0} of 35.5 K. MgB{sub 2} films up to 4 {mu}m in thickness grown at 550 deg. C have J{sub c} over 10{sup 6} A cm{sup -2} at 5 K and zero applied field. The low deposition temperature of MgB{sub 2} films is desirable for all-MgB{sub 2} tunnel junctions and MgB{sub 2} thick films are important for applications in coated conductors.

  18. Properties of MgB2 films grown at various temperatures by hybrid physical-chemical vapour deposition

    International Nuclear Information System (INIS)

    A hybrid physical-chemical vapour deposition (HPCVD) system consisting of separately controlled Mg-source heater and substrate heater is used to grow MgB2 thin films and thick films at various temperatures. We are able to grow superconducting MgB2 thin films at temperatures as low as 350 deg. C with a Tc0 of 35.5 K. MgB2 films up to 4 μm in thickness grown at 550 deg. C have Jc over 106 A cm-2 at 5 K and zero applied field. The low deposition temperature of MgB2 films is desirable for all-MgB2 tunnel junctions and MgB2 thick films are important for applications in coated conductors

  19. Zinc sulfide and terbium-doped zinc sulfide films grown by traveling wave reactor atomic layer epitaxy

    International Nuclear Information System (INIS)

    Zinc sulfide (ZnS) and terbium-doped ZnS (ZnS:Tb) thin films were grown by traveling wave reactor atomic layer epitaxy (ALE). In the present work, ZnCl2, H2S, and tris (2,2,6,6-tetramethyl-3,5-heptandionato) terbium (Tb(tmhd)3) were used as the precursors. The dependence of crystallinity and Cl content of ZnS films was investigated on the growth temperature. ZnS and ZnS:Tb films grown at temperatures ranging from 400 to 500 .deg. C showed a hexagonal-2H crystalline structure. The crystallinity of ZnS film was greatly enhanced as the temperature increased. At growth temperatures higher than 450.deg.C, the films showed preferred orientation with mainly (002) diffraction peak. The Cl content decreased from approximately 9 to 1 at.% with the increase in growth temperature from 400 to 500 .deg. C. The segregation of Cl near the surface region and the incorporation of O from Tb(tmhd)3 during ALE process were also observed using Auger electron spectroscopy. The ALE-grown ZnS and ZnS:Tb films revealed very uniform thickness and smooth surface morphology in the observation using atomic force microscopy and transmission electron microscopy

  20. Zinc sulfide and terbium-doped zinc sulfide films grown by traveling wave reactor atomic layer epitaxy

    CERN Document Server

    Yun, S J; Nam, K S

    1998-01-01

    Zinc sulfide (ZnS) and terbium-doped ZnS (ZnS:Tb) thin films were grown by traveling wave reactor atomic layer epitaxy (ALE). In the present work, ZnCl sub 2 , H sub 2 S, and tris (2,2,6,6-tetramethyl-3,5-heptandionato) terbium (Tb(tmhd) sub 3) were used as the precursors. The dependence of crystallinity and Cl content of ZnS films was investigated on the growth temperature. ZnS and ZnS:Tb films grown at temperatures ranging from 400 to 500 .deg. C showed a hexagonal-2H crystalline structure. The crystallinity of ZnS film was greatly enhanced as the temperature increased. At growth temperatures higher than 450.deg.C, the films showed preferred orientation with mainly (002) diffraction peak. The Cl content decreased from approximately 9 to 1 at.% with the increase in growth temperature from 400 to 500 .deg. C. The segregation of Cl near the surface region and the incorporation of O from Tb(tmhd) sub 3 during ALE process were also observed using Auger electron spectroscopy. The ALE-grown ZnS and ZnS:Tb films re...

  1. Stoichiometry and characterization of aluminum oxynitride thin films grown by ion-beam-assisted pulsed laser deposition

    International Nuclear Information System (INIS)

    Oxides are inherently stable in air at elevated temperatures and may serve as wear resistant matrices for solid lubricants. Aluminum oxide is a particularly good candidate for a matrix because it has good diffusion barrier properties and modest hardness. Most thin film deposition techniques that are used to grow alumina require high temperatures to impart crystallinity. Crystalline films are about twice as hard as amorphous ones. Unfortunately, the mechanical properties of most engineering steels are degraded at temperatures above 250-350 deg. C. This work is focused on using energetic reactive ion bombardment during simultaneous pulsed laser deposition to enhance film crystallization at low temperatures. Alumina films were grown at several background gas pressures and temperatures, with and without Ar ion bombardment. The films were nearly stoichiometric except for depositions in vacuum. Using nitrogen ion bombardment, nitrogen was incorporated into the films and formed the Al-O-N matrix. Nitrogen concentration could be controlled through selection of gas pressure and ion energy. Crystalline Al-O-N films were grown at 330 deg. C with a negative bias voltage to the substrate, and showed improved hardness in comparison to amorphous films

  2. Comparison of stress states in GaN films grown on different substrates: Langasite, sapphire and silicon

    Science.gov (United States)

    Park, Byung-Guon; Saravana Kumar, R.; Moon, Mee-Lim; Kim, Moon-Deock; Kang, Tae-Won; Yang, Woo-Chul; Kim, Song-Gang

    2015-09-01

    We demonstrate the evolution of GaN films on novel langasite (LGS) substrate by plasma-assisted molecular beam epitaxy, and assessed the quality of grown GaN film by comparing the experimental results obtained using LGS, sapphire and silicon (Si) substrates. To study the substrate effect, X-ray diffraction (XRD), scanning electron microscopy (SEM), Raman spectroscopy and photoluminescence (PL) spectra were used to characterize the microstructure and stress states in GaN films. Wet etching of GaN films in KOH solution revealed that the films deposited on GaN/LGS, AlN/sapphire and AlN/Si substrates possess Ga-polarity, while the film deposited on GaN/sapphire possess N-polarity. XRD, Raman and PL analysis demonstrated that a compressive stress exist in the films grown on GaN/LGS, AlN/sapphire, and GaN/sapphire substrates, while a tensile stress appears on AlN/Si substrate. Comparative analysis showed the growth of nearly stress-free GaN films on LGS substrate due to the very small lattice mismatch (~3.2%) and thermal expansion coefficient difference (~7.5%). The results presented here will hopefully provide a new framework for the further development of high performance III-nitride-related devices using GaN/LGS heteroepitaxy.

  3. Effect of growth temperature on defects in epitaxial GaN film grown by plasma assisted molecular beam epitaxy

    Directory of Open Access Journals (Sweden)

    S. S. Kushvaha

    2014-02-01

    Full Text Available We report the effect of growth temperature on defect states of GaN epitaxial layers grown on 3.5 μm thick GaN epi-layer on sapphire (0001 substrates using plasma assisted molecular beam epitaxy. The GaN samples grown at three different substrate temperatures at 730, 740 and 750 °C were characterized using atomic force microscopy and photoluminescence spectroscopy. The atomic force microscopy images of these samples show the presence of small surface and large hexagonal pits on the GaN film surfaces. The surface defect density of high temperature grown sample is smaller (4.0 × 108 cm−2 at 750 °C than that of the low temperature grown sample (1.1 × 109 cm−2 at 730 °C. A correlation between growth temperature and concentration of deep centre defect states from photoluminescence spectra is also presented. The GaN film grown at 750 °C exhibits the lowest defect concentration which confirms that the growth temperature strongly influences the surface morphology and affects the optical properties of the GaN epitaxial films.

  4. Tribology of diamond-like carbon films fundamentals and applications

    CERN Document Server

    Donnet, Christophe

    2007-01-01

    Despite being in the spotlight for a very long time; there is no such book that is dedicated to the Tribology and applications of DLC films. Both scientifically and industrially, interest in these films has grown rapidly in recent years and this trend is expected to grow even further with increasing industrial applications. This book contains some of the most relevant and fundamental information on the Tribology and applications of DLC films. It also provides reliable and up-to-date information on different DLC coatings and their tribological properties which are available for use in various i

  5. Optical and structural properties of CdS films grown by CSVT technique

    International Nuclear Information System (INIS)

    CdS films were grown on glass substrates by the close spaced vapor transport technique (CSVT). We deposited two series of samples: a) with a substrate temperature of 150 C (group A) and b) with a variation of substrate temperature between 200 C and 550 C, at intervals of 50 C (group B). The samples of group A were annealed in N2 atmosphere, from 200 C to 400 C, at intervals of 50 C. All samples were measured by X-ray diffraction and optical transmission. X-ray diffraction patterns show that the films had a mixture of cubic and hexagonal structure remained unchanged after the thermal annealing, the main phase present was cubic. The energy band gap shows a thermal stability. The substrate temperature has no effect over the crystal structure and band gap energy. Transmittance and X-ray measurements show a thermal stability of the crystal structure and band gap energy. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  6. Electrons diffusion study on the nitrogen-doped nanocrystalline diamond film grown by MPECVD method

    International Nuclear Information System (INIS)

    Nitrogen-doped nanocrystalline diamond (NNCD) films were deposited onto p-type silicon substrates with three different layer structures: (i) directly onto the silicon substrate (NNCD/Si), (ii) silicon with undoped nanocrystalline diamond layer which was deposited in the same way as the above mentioned NNCD by the recipe Ar/CH4/H2 with a ratio of 98%/1%/1% (NNCD/NCD/Si), and (iii) silicon wafer with 100 nm thickness SiO2 layer (NNCD/SiO2/Si). Atomic force microscopy (AFM), X-ray diffraction (XRD) and Raman spectroscopy were employed to characterize the morphology and microstructure of the as-grown nitrogen-doped diamond films. Silver colloid/silver contacts were made at to measure the current-voltage (I-V) characteristics for the three different structures. Electrons from a CVD reactor hydrogen plasma diffuse toward the p-type silicon substrate during a deposition process under the high temperature (∼800 deg. C). The study concluded that the SiO2 layer could effectively prevents the diffusion of electrons.

  7. Electrons diffusion study on the nitrogen-doped nanocrystalline diamond film grown by MPECVD method

    Energy Technology Data Exchange (ETDEWEB)

    Hu Qiang, E-mail: qhu@mail.usf.edu [Department of Mechanical Engineering, University of South Florida, Tampa, FL 33620-5350 (United States); Joshi, Rakesh K. [Department of Mechanical Engineering, University of South Florida, Tampa, FL 33620-5350 (United States); Kumar, Ashok [Department of Mechanical Engineering, University of South Florida, Tampa, FL 33620-5350 (United States); Nanomaterials and Nanomanufacturing Research Center, University of South Florida, Tampa, FL 33620-5350 (United States)

    2010-08-15

    Nitrogen-doped nanocrystalline diamond (NNCD) films were deposited onto p-type silicon substrates with three different layer structures: (i) directly onto the silicon substrate (NNCD/Si), (ii) silicon with undoped nanocrystalline diamond layer which was deposited in the same way as the above mentioned NNCD by the recipe Ar/CH{sub 4}/H{sub 2} with a ratio of 98%/1%/1% (NNCD/NCD/Si), and (iii) silicon wafer with 100 nm thickness SiO{sub 2} layer (NNCD/SiO{sub 2}/Si). Atomic force microscopy (AFM), X-ray diffraction (XRD) and Raman spectroscopy were employed to characterize the morphology and microstructure of the as-grown nitrogen-doped diamond films. Silver colloid/silver contacts were made at to measure the current-voltage (I-V) characteristics for the three different structures. Electrons from a CVD reactor hydrogen plasma diffuse toward the p-type silicon substrate during a deposition process under the high temperature ({approx}800 deg. C). The study concluded that the SiO{sub 2} layer could effectively prevents the diffusion of electrons.

  8. Nonequilibrium critical behavior of magnetic thin films grown in a temperature gradient

    International Nuclear Information System (INIS)

    We investigate the irreversible growth of (2 + 1)-dimensional magnetic thin films under the influence of a transverse temperature gradient, which is maintained by thermal baths across a direction perpendicular to the direction of growth. Therefore, different longitudinal layers grow at different temperatures between T1 and T2, where T1 chom 2 and Tchom=0.6 9(1) is the critical temperature of films grown in homogeneous thermal baths. We find a far-from-equilibrium continuous order–disorder phase transition driven by the thermal bath gradient. We characterize this gradient-induced critical behavior by means of standard finite-size scaling procedures, which lead to the critical temperature Tc = 0.84(2) and a new universality class consistent with the set of critical exponents ν = 3/2, γ = 5/2, and β = 1/4. In order to gain further insight into the effects of the temperature gradient, we also develop a bond model that captures the magnetic film’s growth dynamics. Our findings show that the interplay of geometry and thermal bath asymmetries leads to growth bond flux asymmetries and the onset of transverse ordering effects that explain qualitatively the shift observed in the critical temperature. The relevance of these mechanisms is further confirmed by a finite-size scaling analysis of the interface width, which shows that the growing sites of the system define a self-affine interface. (paper)

  9. Low-temperature, vapor-liquid-solid, laterally grown silicon films using alloyed catalysts

    Science.gov (United States)

    LeBoeuf, Jerome L.; Brodusch, Nicolas; Gauvin, Raynald; Quitoriano, Nathaniel J.

    2014-12-01

    Using amorphous oxide templates known as micro-crucibles which confine a vapor-liquid-solid catalyst to a specific geometry, two-dimensional silicon thin-films of a single orientation have been grown laterally over an amorphous substrate and defects within crystals have been necked out. The vapor-liquid-solid catalysts consisted nominally of 99% gold with 1% titanium, chromium, or aluminum, and each alloy affected the processing of micro-crucibles and growth within them significantly. It was found that chromium additions inhibited the catalytic effect of the gold catalysts, titanium changed the morphology of the catalyst during processing and aluminum stabilized a potential third phase in the gold-silicon system upon cooling. Two mechanisms for growing undesired nanowires were identified both of which hindered the VLS film growth, fast silane cracking rates and poor gold etching, which left gold nanoparticles near the gold-vapor interface. To reduce the silane cracking rates, growth was done at a lower temperature while an engineered heat and deposition profile helped to reduce NWs caused by the second mechanism. Through experimenting with catalyst compositions, the fundamental mechanisms which produce concentration gradients across the gold-silicon alloy within a given micro-crucible have been proposed. Using the postulated mechanisms, micro-crucibles were designed which promote high-quality, single crystal growth of semiconductors.

  10. Voigt effect measurement on PLD grown NiO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Scarlat, Camelia; Mok, Kah Ming; Zhou, Shengqiang; Vinnichenko, Mykola; Helm, Manfred; Schmidt, Heidemarie [Institute for Ion Beam Physics and Materials Research, Forschungszentrum Dresden-Rossendorf, Bautzner Landstrasse 400, 01328 Dresden (Germany); Lorenz, Michael; Grundmann, Marius [Institut fuer Experimentelle Physik II, Fakultaet fuer Physik und Geowissenschaften, 04103 Leipzig (Germany); Schubert, Mathias [Department of Electrical Engineering, University of Nebraska-Lincoln, 68588-0511, Nebraska (United States)

    2010-02-15

    NiO has great potential applications in spin valves, magnetooptical sensors, optical fibers, solar thermal absorbers, and in nonvolatile resistive random access memory devices. In our study NiMnO and NiMnLiO films have been grown on double-side polished r-plane sapphire substrates by pulsed laser deposition (PLD). We measured the complex Voigt angle using the polarized light from a HeCd laser, a Glan Taylor polarizer, a Hinds PEM-100[1] and two Lock-Ins. The Voigt effect is a second order magnetooptic effect[2]. The polarization state of light after transmission through a sample consisting of ca. 1 {mu}m thick, weak ferromagnetic NiO thin on purely diamagnetic r-plane sapphire substrates has been modelled using the 4 x 4 matrix formalism[3] in dependence of an external magnetic field applied in-plane, i.e. in Voigt configuration. The modelling results revealed that for the diamagnetic sapphire substrate the Voigt angle depends parabolically on the external magnetic field and that the weak ferromagnetic NiO thin films change the parabolic dependence of the Voigt angle in the range of {+-}0.1 T to a flat-top shape in agreement with the experimentally determined Voigt angle (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  11. Electrical properties of GaAsN film grown by chemical beam epitaxy

    International Nuclear Information System (INIS)

    The local vibrational modes (LVMs) observed by Fourier transform infrared (FTIR) spectroscopy in GaAsN films grown by chemical beam epitaxy (CBE) was studied, and the influence of the nitrogen-hydrogen bond (N-H) concentration on the hole concentration was investigated. The absorption peak around 936 cm-1 is suggested to be the second harmonic mode of the substitutional N, NAs, LVM around 469 cm-1. The absorption peak around 960 cm-1 is suggested to be the wagging mode of the N-H, where the stretch mode is observed around 3098 cm-1. The hole concentration linearly increases with increasing N-H concentration, and the slope increases with increasing growth temperature. It indicates that the hole concentration in GaAsN film is determined by both the number of the N-H and unknown defect, such as impurities, vacancies, and interstitials. This defect concentration increases with increasing growth temperature, suggesting that it is determined by Arrhenius type reaction

  12. Phase and disorder investigations in boron nitride thin films grown by PECVD

    International Nuclear Information System (INIS)

    Based on X-ray diffraction and infrared spectroscopy measurements, BN thin films grown by PECVD on silicon substrates have been studied with the aim of identifying the thin film phase. In a set of samples, while the infrared spectra showed characteristic bands of the hexagonal phase, X-ray diffraction patterns only displayed reflections belonging to the cubic BN phase. Therefore, structural models have been developed to explain the apparent inconsistency between the two sets of experimental data. In particular, static disorder effects--which have been introduced in the model starting from the sp2 hybridization of the ordered hexagonal phase, as suggested by the infra-red spectroscopy results--allowed a consistent interpretation of the X-ray diffraction patterns. For another set of samples, which also showed a characteristic hexagonal signal in the IR data, the XRD pattern could not be indexed with any of the BN phases. In this case, the presence of molecular and ionic phases, associated with impurities, was considered in structural modeling studies

  13. Effect of residual stress on the microstructure of GaN epitaxial films grown by pulsed laser deposition

    Science.gov (United States)

    Wang, Haiyan; Wang, Wenliang; Yang, Weijia; Zhu, Yunnong; Lin, Zhiting; Li, Guoqiang

    2016-04-01

    The stress-free GaN epitaxial films have been directly grown by pulsed laser deposition (PLD) at 850 °C, and the effect of different stress on the microstructure of as-grown GaN epitaxial films has been explored in detail. The as-grown stress-free GaN epitaxial films exhibit very smooth surface without any particles and grains, which is confirmed by the smallest surface root-mean-square roughness of 2.3 nm measured by atomic force microscopy. In addition, they also have relatively high crystalline quality, which is proved by the small full-width at half maximum values of GaN(0002) and GaN (10 1 bar 2) X-ray rocking curves as 0.27° and 0.68°, respectively. However, when the growth temperature is lower or higher than 850 °C, internal or thermal stress would be increased in as-grown GaN epitaxial films. To release the larger stress, a great number of dislocations are generated. Many irregular particulates, hexagonal GaN gains and pits are therefore produced on the films surface, and the crystalline quality is greatly reduced consequently. This work has demonstrated the direct growth of stress-free GaN epitaxial films with excellent surface morphology and high crystalline quality by PLD, and presented a comprehensive study on the origins and the effect of stress in GaN layer. It is instructional to achieve high-quality nitride films by PLD, and shows great potential and broad prospect for the further development of high-performance GaN-based devices.

  14. Fast and non-catalytic growth of transparent and conductive graphene-like carbon films on glass at low temperature

    International Nuclear Information System (INIS)

    This article presents the synthesis and systematic study of graphene-like carbon thin films directly grown on commercial glass by using remote electron cyclotron resonance plasma-assisted chemical vapour deposition. The fabrication process is extremely rapid and performed on 2 inch scale dielectric substrate at relatively low temperature (<550 °C) without using metal catalyst. This method avoids damaging and expensive transfer processes of graphene based films and improves compatibility with current fabrication technologies. Nanostructural characterization by transmission electron microscopy indicates the formation of layered graphene-like carbon material. Raman spectroscopy shows that the film consists of nanocrystals with a mean domain size close to 2 nm, probably interconnected by amorphous material. These graphene-like carbon based films are transparent and conductive. Functional optoelectric characterization of these films confirms their high transparency over 95% and relative high conductivity around 5 kΩ, exceeding the properties of non-doped small domain graphene based films grown at low temperatures reported so far. (paper)

  15. Fabrication and electron field-emission of carbon nanofibers grown on silicon nanoporous pillar array

    International Nuclear Information System (INIS)

    Highlights: ► Carbon nanofibers were grown on silicon nanoporous pillar array by a CVD method.► Low turn-on field, high density and stable FE current were obtained in CNTs/Si-NPA.► Defects in CNTs and Si array substrate contributes the excellent FE property. - Abstract: Random orientation carbon nanofibers (CNFs) were grown on silicon nanoporous pillar array (Si-NPA) by thermal chemical vapor deposition (CVD) method with acetylene (C2H2) as carbon precursor and Ni as the catalyst. The synthesized CNFs were mainly composed of amorphous carbon and disordered graphite layers with a core–shell like structure. And, the tangled CNFs and the regular silicon-pillar array formed a nanometer-micron hierarchy structure. The electron field-emission (FE) property of CNFs/Si-NPA was measured and low turn-on field, high-density and stable FE current, high enhancement factor were obtained. The outstanding FE performance of the CNFs/Si-NPA emitters was attributed to the random orientation and defects of CNFs, the undulate surface of the Si-NPA substrate.

  16. The uniformity of Al distribution in aluminum-doped zinc oxide films grown by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Luka, G., E-mail: gluka@ifpan.edu.pl [Institute of Physics, Polish Academy of Sciences, Warsaw (Poland); Wachnicki, L.; Witkowski, B.S.; Krajewski, T.A.; Jakiela, R.; Guziewicz, E. [Institute of Physics, Polish Academy of Sciences, Warsaw (Poland); Godlewski, M. [Institute of Physics, Polish Academy of Sciences, Warsaw (Poland); Department of Mathematics and Natural Sciences, College of Science, Cardinal Stefan Wyszynski University, Warsaw (Poland)

    2011-02-25

    We investigated the aluminum distribution in aluminum-doped zinc oxide films grown by atomic layer deposition. Surface morphology, structure, composition and electrical properties of obtained films were studied. For the aluminum content less than 2 at.%, a periodicity of Al distribution along the layer depth was observed. This periodicity diminished significantly after annealing the samples in nitrogen atmosphere at 300 deg. C. For the Al content higher than 2 at.%, its distribution in ZnO:Al films was uniform within the depth measurement accuracy of {approx}5-10 nm.

  17. Effects of oxygen pressure on La_3Ga_5SiO_(14) thin films grown by pulsed laser deposition

    Institute of Scientific and Technical Information of China (English)

    张雯; 王继扬; 季振国; 李红霞; 娄垚; 姚淑华

    2010-01-01

    La3Ga5SiO14 thin films were grown on Si(100) substrates by pulsed laser deposition at several oxygen pressures(5,10,and 20 Pa).The effects of oxygen pressure on the structural and morphological characteristics of the films were investigated using X-ray diffraction,atomic force microscopy,and scanning electron microscopy.X-ray diffraction results showed the intensity of lines from crystallites oriented along the(300) and(220) planes increased as the oxygen pressure was increased to 20 Pa.The deposited films ...

  18. Low-temperature transport in ultra-thin tungsten films grown by focused-ion-beam deposition

    OpenAIRE

    Chiatti, O.; Warburton, P. A.

    2010-01-01

    We have fabricated tungsten-containing films by focused-ion-beam (FIB)-induced chemical vapour deposition. By using ion-beam doses below 50 pC/μm² on a substrate of amorphous silicon, we have grown continuous films with thickness below 20 nm. The low-temperature electron transport properties were investigated by measuring current-voltage characteristics for temperatures down to 400 mK and in magnetic fields up to 8 T. FIB-deposited tungsten films are known to have an enhanced transition tem­p...

  19. Superconducting properties of very high quality NbN thin films grown by high temperature chemical vapor deposition

    OpenAIRE

    Hazra, D.; Tsavdaris, N.; Jebari, S.; Grimm, A.; Blanchet, F.; Mercier, F.; Blanquet, E.; Chapelier, C.; Hofheinz, M.

    2016-01-01

    Niobium nitride (NbN) is widely used in high-frequency superconducting electronics circuits because it has one of the highest superconducting transition temperatures ($T_c$ $\\sim$ 16.5 K) and largest gap among conventional superconductors. In its thin-film form, the $T_c$ of NbN is very sensitive to growth conditions and it still remains a challenge to grow NbN thin film (below 50 nm) with high $T_c$. Here, we report on the superconducting properties of NbN thin films grown by high-temperatur...

  20. Laser MBE-grown yttrium iron garnet films on GaN: characterization of the crystal structure and magnetic properties

    Science.gov (United States)

    Kaveev, A. K.; Bursian, V. E.; Gastev, S. V.; Krichevtsov, B. B.; Suturin, S. M.; Volkov, M. P.; Sokolov, N. S.

    2016-07-01

    Yttrium iron garnet (YIG) films were grown on GaN substrates using the laser molecular beam epitaxy method. X-ray diffraction data showed polycrystalline YIG layers without additional structural modifications. The magnetic properties of the YIG films were studied at room temperature with the aid of a vibration sample magnetometer, the magneto-optical Kerr effect and ferromagnetic resonance methods. ‘Easy-plane’-type magnetic anisotropy was found in the films. The gyromagnetic ratio and 4 πMS value were calculated.

  1. Luminescence properties of lanthanide and ytterbium lanthanide titanate thin films grown by atomic layer deposition

    International Nuclear Information System (INIS)

    Lanthanide based luminescent materials are highly suitable as down conversion materials in combination with a UV-absorbing host material. The authors have used TiO2 as the UV-absorbing host material and investigated the energy transfer between TiO2 and 11 different lanthanide ions, Ln3+ (Ln = La, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, Yb) in thin films grown by atomic layer deposition. They have also investigated the possibility to improve the overall energy transfer from TiO2 to Yb3+ with a second Ln3+, in order to enhance down conversion. The films were grown at a substrate temperature of 300 °C, using the Ln(thd)3/O3 (thd = 2,2,6,6-tetramethyl-3,5-heptanedione) and TiCl4/H2O precursor pairs. The focus of the work is to explore the energy transfer from TiO2 to Ln3+ ions, and the energy transfer between Ln3+ and Yb3+ ions, which could lead to efficient down conversion. The samples have been characterized by x-ray diffraction, x-ray fluorescence, spectroscopic ellipsometry, and photoluminescence. All films were amorphous as deposited, and the samples have been annealed at 600, 800, and 1000 °C in order to investigate the correlation between the crystallinity and luminescence. The lanthanum titanium oxide samples showed a weak and broad emission centered at 540 nm, which was absent in all the other samples, indicating energy transfer from TiO2 to Ln3+ in all other lanthanide samples. In the amorphous phase, all samples, apart from La, Tb, and Tm, showed a typical f-f emission when excited by a 325 nm HeCd laser. None of the samples showed any luminescence after annealing at 1000 °C due to the formation of Ln2Ti2O7. Samples containing Nd, Sm, and Eu show a change in emission spectrum when annealed at 800 °C compared to the as-deposited samples, indicating that the smaller lanthanides crystallize in a different manner than the larger lanthanides. Energy transfer from Ln3+ to Yb3+ was observed neither in the amorphous or annealed samples. On the

  2. Piezoresistive Effect of Doped carbon Nanotube/Cellulose Films

    Institute of Scientific and Technical Information of China (English)

    王万录; 廖克俊; 李勇; 王永田

    2003-01-01

    The strain-induced resistance changes in iodine-doped and undoped carbon nanotube films were investigated by a three-point bending test. Carbon nanotubes were fabricated by hot filament chemical vapour deposition. The experimental results showed that there has a striking piezoresistive effect in carbon nanotube films. The gauge factor for I-doped and undoped carbon nanotube films under 500 microstrain was about 125 and 65 respectively at room temperature, exceeding that of polycrystalline silicon (30) at 35℃. The origin of the piezoresistivity in the films may be ascribed to a strain-induced change in the band gap for the doped tubes and to the intertube contact resistance for the undoped tubes.

  3. Wetting behaviour of carbon nitride nanostructures grown by plasma enhanced chemical vapour deposition technique

    International Nuclear Information System (INIS)

    Highlights: • Carbon nitride films were prepared by using radio frequency plasma enhanced chemical vapour deposition system by altering the electrode distance. • The effect of electrode distance on surface morphology, surface roughness, chemical bonding and hydrophobic behaviour has been studied. • Hydrophobic behaviour were studied by measuring contact angle and calculating surface energy. • CNx nanostructures show super-hydrophobic behaviour. • We report a tunable transition of hydrophilic to super-hydrophobic behaviour of film as electrode distance is reduced. - Abstract: Tuning the wettability of various coating materials by simply controlling the deposition parameters is essential for various specific applications. In this work, carbon nitride (CNx) films were deposited on silicon (1 1 1) substrates using radio-frequency plasma enhanced chemical vapour deposition employing parallel plate electrode configuration. Effects of varying the electrode distance (DE) on the films’ structure and bonding properties were investigated using Field emission scanning electron microscopy, Atomic force microscopy, Fourier transform infrared and X-ray photoemission spectroscopy. The wettability of the films was analyzed using water contact angle measurements. At high DE, the CNx films’ surface was smooth and uniform. This changed into fibrous nanostructures when DE was decreased. Surface roughness of the films increased with this morphological transformation. Nitrogen incorporation increased with decrease in DE which manifested the increase in both relative intensities of C=N to C=C and N−H to O−H bonds. sp2-C to sp3-C ratio increased as DE decreased due to greater deformation of sp2 bonded carbon at lower DE. The films’ characteristics changed from hydrophilic to super-hydrophobic with the decrease in DE. Roughness ratio, surface porosity and surface energy calculated from contact angle measurements were strongly dependent on the morphology, surface

  4. Intrinsic graphene field effect transistor on amorphous carbon films

    OpenAIRE

    Tinchev, Savcho

    2013-01-01

    Fabrication of graphene field effect transistor is described which uses an intrinsic graphene on the surface of as deposited hydrogenated amorphous carbon films. Ambipolar characteristic has been demonstrated typical for graphene devices, which changes to unipolar characteristic if the surface graphene was etched in oxygen plasma. Because amorphous carbon films can be growth easily, with unlimited dimensions and no transfer of graphene is necessary, this can open new perspective for graphene ...

  5. Epitaxial ZnO films grown on ZnO-buffered c-plane sapphire substrates by hydrothermal method

    International Nuclear Information System (INIS)

    ZnO films are hydrothermally grown on ZnO-buffered c-plane sapphire substrates at a low temperature of 70 deg. C. A radio-frequency (RF) reactive magnetron sputtering has been used to grow the ZnO buffer layers. X-ray diffraction, scanning electron microscopy, and room temperature photoluminescence are carried out to characterize the structure, morphology and optical property of the films. It is found that the films are stress-free. The epitaxial relationship between the ZnO film and the c-plane sapphire substrate is found to be ZnO (0 0 0 1)||Al2O3 (0 0 0 1) in the surface normal and ZnO[101-bar 0]||Al2O3[112-bar 0] in plane. Sapphire treatment, as such acid etching, nitridation, and oxidation are found to influence the nucleation of the film growth, and the buffer layers determine the crystalline quality of the ZnO films. The maximum PL quantum efficiency of ZnO films grown with hydrothermal method is found to be about 80% of single-crystal ZnO.

  6. Optical properties of aluminum nitride thin films grown by direct-current magnetron sputtering close to epitaxy

    International Nuclear Information System (INIS)

    Low-temperature Aluminum Nitride (AlN) thin films with a thickness of 3 μm were deposited by Direct-Current magnetron sputtering on sapphire substrate. They present optical properties similar to those of epitaxially grown films. Different characterization methods such as X-Ray Diffraction, Transmission Electron Microscopy and Atomic Force Microscopy were used to determine the structural properties of the films such as its roughness and crystallinity. Newton interferometer was used for stress measurement of the films. Non-destructive prism-coupling technique was used to determine refractive index and thickness homogeneity by a mapping on the whole sample area. Results show that AlN films grown on AlGaN layer have a high crystallinity close to epitaxial films, associated to a low intrinsic stress for low thickness. These results highlight that it is possible to grow thick sample with microstructure and optical properties close to epitaxy, even on a large surface. - Highlights: ► Aluminum Nitride sputtering technique with a low temperature growth process ► Epitaxial quality of two microns sputtered Aluminum Nitride film ► Optics as a non-destructive accurate tool for acoustic wave investigation

  7. Josephson junctions fabricated by focused ion beam from ex situ grown MgB2 thin films

    International Nuclear Information System (INIS)

    We prepared MgB2 thin films on SrTiO3 (1 0 0) and Al2O3 (1 1-bar 0 2) substrates by e-beam evaporation of MgB2 pellet. The films were deposited at room temperature and post-annealed at 900 deg. C in Mg vapour for 5-30 min. Superconducting transition temperatures were observed between 22 and 30 K. Structure and surface morphology of the films were investigated by X-ray diffraction (XRD) and atomic force microscopy (AFM). The films grown on Al2O3 substrates are c-axis oriented while a film grown on SrTiO3 substrate is aligned with the (1 0 1) direction normal to the substrate planes. The films have grain sizes of about 70 nm. The films were patterned into 4 and 8 μm wide microbridges. The microbridges were observed to carry large critical current densities of approximately 1 MA/cm2 at 6.7 K. Focused ion beam (FIB) was used on the bridges in order to fabricate Josephson junctions. A cut 50 nm in width was made across the microbridges followed by an in situ platinum (Pt) deposition into the cut made. SNS-like weak-link junctions were formed in the process

  8. Optical properties of aluminum nitride thin films grown by direct-current magnetron sputtering close to epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Stolz, A. [Institut d' Electronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, PRES Lille, Université Nord de France, Avenue Poincaré, 59652 Villeneuve d' Ascq Cedex (France); Soltani, A., E-mail: ali.soltani@iemn.univ-lille1.fr [Institut d' Electronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, PRES Lille, Université Nord de France, Avenue Poincaré, 59652 Villeneuve d' Ascq Cedex (France); Abdallah, B. [Department of Materials Physics, Atomic Energy Commission of Syria, Damascus, P.O. Box 6091 (Syrian Arab Republic); Charrier, J. [Fonctions Optiques pour les Technologies de l' informatiON (FOTON), UMR CNRS 6082, 6, rue de Kerampont CS 80518, 22305 Lannion Cedex (France); Deresmes, D. [Institut d' Electronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, PRES Lille, Université Nord de France, Avenue Poincaré, 59652 Villeneuve d' Ascq Cedex (France); Jouan, P.-Y.; Djouadi, M.A. [Institut des Matériaux Jean Rouxel – IMN, UMR CNRS 6502, 2, rue de la Houssinère BP 32229, 44322 Nantes (France); Dogheche, E.; De Jaeger, J.-C. [Institut d' Electronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, PRES Lille, Université Nord de France, Avenue Poincaré, 59652 Villeneuve d' Ascq Cedex (France)

    2013-05-01

    Low-temperature Aluminum Nitride (AlN) thin films with a thickness of 3 μm were deposited by Direct-Current magnetron sputtering on sapphire substrate. They present optical properties similar to those of epitaxially grown films. Different characterization methods such as X-Ray Diffraction, Transmission Electron Microscopy and Atomic Force Microscopy were used to determine the structural properties of the films such as its roughness and crystallinity. Newton interferometer was used for stress measurement of the films. Non-destructive prism-coupling technique was used to determine refractive index and thickness homogeneity by a mapping on the whole sample area. Results show that AlN films grown on AlGaN layer have a high crystallinity close to epitaxial films, associated to a low intrinsic stress for low thickness. These results highlight that it is possible to grow thick sample with microstructure and optical properties close to epitaxy, even on a large surface. - Highlights: ► Aluminum Nitride sputtering technique with a low temperature growth process ► Epitaxial quality of two microns sputtered Aluminum Nitride film ► Optics as a non-destructive accurate tool for acoustic wave investigation.

  9. Photoluminescence and Raman Spectroscopy Studies of Carbon Nitride Films

    OpenAIRE

    Hernández-Torres, J.; Gutierrez-Franco, A.; P. G. González; L. García-González; Hernandez-Quiroz, T.; Zamora-Peredo, L.; V.H. Méndez-García; A. Cisneros-de la Rosa

    2016-01-01

    Amorphous carbon nitride films with N/C ratios ranging from 2.24 to 3.26 were deposited by reactive sputtering at room temperature on corning glass, silicon, and quartz as substrates. The average chemical composition of the films was obtained from the semiquantitative energy dispersive spectroscopy analysis. Photoluminescence measurements were performed to determine the optical band gap of the films. The photoluminescence spectra displayed two peaks: one associated with the substrate and the ...

  10. Stretchable transistors with buckled carbon nanotube films as conducting channels

    Science.gov (United States)

    Arnold, Michael S; Xu, Feng

    2015-03-24

    Thin-film transistors comprising buckled films comprising carbon nanotubes as the conductive channel are provided. Also provided are methods of fabricating the transistors. The transistors, which are highly stretchable and bendable, exhibit stable performance even when operated under high tensile strains.

  11. Graphene diamond-like carbon films heterostructure

    Science.gov (United States)

    Zhao, Fang; Afandi, Abdulkareem; Jackman, Richard B.

    2015-03-01

    A limitation to the potential use of graphene as an electronic material is the lack of control over the 2D materials properties once it is deposited on a supporting substrate. Here, the use of Diamond-like Carbon (DLC) interlayers between the substrate and the graphene is shown to offer the prospect of overcoming this problem. The DLC films used here, more properly known as a-C:H with ˜25% hydrogen content, have been terminated with N or F moieties prior to graphene deposition. It is found that nitrogen terminations lead to an optical band gap shrinkage in the DLC, whilst fluorine groups reduce the DLC's surface energy. CVD monolayer graphene subsequently transferred to DLC, N terminated DLC, and F terminated DLC has then been studied with AFM, Raman and XPS analysis, and correlated with Hall effect measurements that give an insight into the heterostructures electrical properties. The results show that different terminations strongly affect the electronic properties of the graphene heterostructures. G-F-DLC samples were p-type and displayed considerably higher mobility than the other heterostructures, whilst G-N-DLC samples supported higher carrier densities, being almost metallic in character. Since it would be possible to locally pattern the distribution of these differing surface terminations, this work offers the prospect for 2D lateral control of the electronic properties of graphene layers for device applications.

  12. Graphene diamond-like carbon films heterostructure

    International Nuclear Information System (INIS)

    A limitation to the potential use of graphene as an electronic material is the lack of control over the 2D materials properties once it is deposited on a supporting substrate. Here, the use of Diamond-like Carbon (DLC) interlayers between the substrate and the graphene is shown to offer the prospect of overcoming this problem. The DLC films used here, more properly known as a-C:H with ∼25% hydrogen content, have been terminated with N or F moieties prior to graphene deposition. It is found that nitrogen terminations lead to an optical band gap shrinkage in the DLC, whilst fluorine groups reduce the DLC's surface energy. CVD monolayer graphene subsequently transferred to DLC, N terminated DLC, and F terminated DLC has then been studied with AFM, Raman and XPS analysis, and correlated with Hall effect measurements that give an insight into the heterostructures electrical properties. The results show that different terminations strongly affect the electronic properties of the graphene heterostructures. G-F-DLC samples were p-type and displayed considerably higher mobility than the other heterostructures, whilst G-N-DLC samples supported higher carrier densities, being almost metallic in character. Since it would be possible to locally pattern the distribution of these differing surface terminations, this work offers the prospect for 2D lateral control of the electronic properties of graphene layers for device applications

  13. Graphene diamond-like carbon films heterostructure

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Fang; Afandi, Abdulkareem; Jackman, Richard B., E-mail: r.jackman@ucl.ac.uk [London Centre for Nanotechnology, Electronic and Electrical Engineering Department, University College London, 17-19 Gordon Street, London WC1H 0AH (United Kingdom)

    2015-03-09

    A limitation to the potential use of graphene as an electronic material is the lack of control over the 2D materials properties once it is deposited on a supporting substrate. Here, the use of Diamond-like Carbon (DLC) interlayers between the substrate and the graphene is shown to offer the prospect of overcoming this problem. The DLC films used here, more properly known as a-C:H with ∼25% hydrogen content, have been terminated with N or F moieties prior to graphene deposition. It is found that nitrogen terminations lead to an optical band gap shrinkage in the DLC, whilst fluorine groups reduce the DLC's surface energy. CVD monolayer graphene subsequently transferred to DLC, N terminated DLC, and F terminated DLC has then been studied with AFM, Raman and XPS analysis, and correlated with Hall effect measurements that give an insight into the heterostructures electrical properties. The results show that different terminations strongly affect the electronic properties of the graphene heterostructures. G-F-DLC samples were p-type and displayed considerably higher mobility than the other heterostructures, whilst G-N-DLC samples supported higher carrier densities, being almost metallic in character. Since it would be possible to locally pattern the distribution of these differing surface terminations, this work offers the prospect for 2D lateral control of the electronic properties of graphene layers for device applications.

  14. Electrical and optical properties of carbon-doped GaN grown by MBE on MOCVD GaN templates using a CCl4 dopant source

    Energy Technology Data Exchange (ETDEWEB)

    Armitage, Rob; Yang, Qing; Feick, Henning; Park, Yeonjoon; Weber, Eicke R.

    2002-04-15

    Carbon-doped GaN was grown by plasma-assisted molecular-beam epitaxy using carbon tetrachloride vapor as the dopant source. For moderate doping mainly acceptors were formed, yielding semi-insulating GaN. However at higher concentrations p-type conductivity was not observed, and heavily doped films (>5 x 10{sup 20} cm{sup -3}) were actually n-type rather than semi-insulating. Photoluminescence measurements showed two broad luminescence bands centered at 2.2 and 2.9 eV. The intensity of both bands increased with carbon content, but the 2.2 eV band dominated in n-type samples. Intense, narrow ({approx}6 meV) donor-bound exciton peaks were observed in the semi-insulating samples.

  15. Hard carbon films: Deposition and diagnostics

    OpenAIRE

    Frgala Zdeněk; Kudrle Vít; Janča Jan; Meško Marcel; Eliáš Marek; Buršík Jiří

    2003-01-01

    We studied the growth of microcrystalline diamond films on pre-treated Si and WC-Co substrates by microwave plasma chemical vapour deposition (MPCVD). The pre-treatment was varied and its effect on diamond film was studied.

  16. Topological insulator Bi2Se3 thin films grown on double-layer graphene by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Atomically flat thin films of topological insulator Bi2Se3 have been grown on double-layer graphene formed on 6H-SiC(0001) substrate by molecular beam epitaxy. By a combined study of reflection high energy electron diffraction and scanning tunneling microscopy, we identified the Se-rich condition and temperature criterion for layer-by-layer growth of epitaxial Bi2Se3 films. The as-grown films without doping exhibit a low defect density of 1.0±0.2x1011/cm2, and become a bulk insulator at a thickness of ten quintuple layers, as revealed by in situ angle resolved photoemission spectroscopy measurement.

  17. Electrical and photovoltaic properties of ZnO/Si heterostructures with ZnO films grown by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Pietruszka, R., E-mail: pietruszka@ifpan.edu.pl [Institute of Physics, Polish Academy of Sciences, Warsaw (Poland); Luka, G.; Witkowski, B.S.; Kopalko, K. [Institute of Physics, Polish Academy of Sciences, Warsaw (Poland); Zielony, E.; Bieganski, P.; Placzek-Popko, E. [Institute of Physics, Wroclaw University of Technology, Wroclaw (Poland); Godlewski, M. [Institute of Physics, Polish Academy of Sciences, Warsaw (Poland); Department of Mathematics and Natural Sciences College of Science, Cardinal Stefan Wyszynski University, Warsaw (Poland)

    2014-07-31

    We report on the properties of photovoltaic (PV) structures based on thin films of n-type zinc oxide grown by atomic layer deposition method on a cheap silicon substrate. Thin films of ZnO are used as n-type partner to p-type Si (110) and, when doped with Al, as a transparent electrode. PV structures with different thicknesses of ZnO layers (from 600 nm to 1600 nm) were deposited to determine the optimal performance of PV structures. The best response we obtained for the structure with ZnO layer thickness of 800 nm. The so-obtained PV structures show 6% efficiency. - Highlights: • Zinc oxide thin films grown by atomic layer deposition for solar cells application • Optimization of ZnO properties for an efficient photovoltaic response • Evaluation of electrical and photovoltaic performance of fabricated photovoltaic devices.

  18. X-ray Investigation of Ferromagnetic MnAs Thin Films Grown on GaAs(001) by MBE

    Science.gov (United States)

    Huang, S.; Ming, Z. H.; Soo, Y. L.; Kao, Y. H.; Tanaka, M.; Munekata, H.

    1996-03-01

    Quantitative characterization of the microstructures in epitaxial layers grown by MBE is essential for understanding the dynamical processes of epitaxy and surface morphology. In the present study, various x-ray techniques including grazing incidence x-ray scattering (GIXS), x-ray diffraction (XRD), and extended x-ray absorption fine structure (EXAFS) have been employed to investigate the microstructures of two MnAs thin films grown on GaAs(001) by using two different growth templates. The film structures are compared in terms of the interfacial roughness, lattice constants, epilayer thickness, local environment surrounding the Mn atoms, coordination number, and local disorder. These results provide quantitative evidence for the effects of template on the local structure and crystallinity of the MnAs films which can be correlated with the observed difference in their physical properties such as the easy magnetization direction, etc.. * Research is supported in part by DOE.

  19. Formation of Ultrananocrystalline Diamond/Amorphous Carbon Composite Films in Vacuum Using Coaxial Arc Plasma Gun

    Science.gov (United States)

    Hanada, Kenji; Yoshida, Tomohiro; Nakagawa, You; Yoshitake, Tsuyoshi

    2010-12-01

    Ultrananocrystalline diamond (UNCD)/nonhydrogenated amorphous carbon (a-C) composite films were grown in vacuum using a coaxial arc plasma gun. From the X-ray diffraction measurement, the UNCD crystallite size was estimated to be 1.6 nm. This size is dramatically reduced from that (2.3 nm) of UNCD/hydrogenated amorphous carbon (a-C:H) composite films grown in a hydrogen atmosphere. The sp3/(sp3 + sp2) value, which was estimated from the X-ray photoemission spectrum, was also reduced to be 41%. A reason for it might be the reduction in the UNCD crystallite size. From the near-edge X-ray absorption fine-structure (NEXAFS) spectrum, it was found that the π*C=C and π*C≡C bonds are preferentially formed instead of the σ*C-H bonds in the UNCD/a-C:H films. Since the extremely small UNCD crystallites (1.6 nm) correspond to the nuclei of diamond, we consider that UNCD crystallite formation should be due predominantly to nucleation. The supersaturated condition required for nucleation is expected to be realized in the deposition using the coaxial arc plasma gun.

  20. Ferroelectric properties and dielectric responses of multiferroic BiFeO{sub 3} films grown by RF magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Qi Xiaoding; Tsai, P-C; Chen, I-G [Department of Materials Science and Engineering, National Cheng Kung University, Taiwan (China); Chen, Y-C; Ko, C-H; Huang, J-C-A [Department of Physics, National Cheng Kung University, Taiwan (China)], E-mail: xqi045@mail.ncku.edu.tw

    2008-12-07

    Multiferroic BiFeO{sub 3} films have been grown on LaNiO{sub 3-x}/SrTiO{sub 3} and Pt/Si substrates by RF magnetron sputtering. The films showed fully saturated ferroelectric hysteresis loops with large remanent polarization of 64 {mu}C cm{sup -2}, suitable for most device applications. Piezoresponse force microscopy confirmed that the films were electrically writable. In addition to the high-frequency intrinsic dielectric loss of epitaxial films, the Argand diagram also revealed low-frequency contributions from both dc conductivity and interfacial polarization at electrodes. For polycrystalline films on Pt/Si, the dominant contribution to dielectric loss was space charge polarization at grain boundaries. (fast track communication)

  1. Nanomechanical properties of SiC films grown from C{sub 60} precursors using atomic force microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Morse, K. [Colorado School of Mines, Golden, CO (United States); Balooch, M.; Hamza, A.V.; Belak, J. [Lawrence Livermore National Lab., CA (United States)

    1994-12-01

    The mechanical properties of SiC films grown via C{sub 60} precursors were determined using atomic force microscopy (AFM). Conventional silicon nitride and modified diamond cantilever AFM tips were employed to determine the film hardness, friction coefficient, and elastic modulus. The hardness is found to be between 26 and 40 GPa by nanoindentation of the film with the diamond tip. The friction coefficient for the silicon nitride tip on the SiC film is about one third that for silicon nitride sliding on a silicon substrate. By combining nanoindentation and AFM measurements an elastic modulus of {approximately}300 GPa is estimated for these SiC films. In order to better understand the atomic scale mechanisms that determine the hardness and friction of SiC, we simulated the molecular dynamics of a diamond indenting a crystalline SiC substrate.

  2. Flexible supercapacitor electrodes with vertically aligned carbon nanotubes grown on aluminum foils

    Institute of Scientific and Technical Information of China (English)

    Itir Bakis Dogru; Mete Batuhan Durukan; Onur Turel; Husnu Emrah Unalan

    2016-01-01

    In this work, vertically aligned carbon nanotubes (VACNTs) grown on aluminum foils were used as flexible supercapacitor electrodes. Aluminum foils were used as readily available, cheap and conductive substrates, and VACNTs were grown directly on these foils through chemical vapor deposition (CVD) method. Solution based ultrasonic spray pyrolysis (USP) method was used for the deposition of the CNT catalyst. Direct growth of VACNTs on aluminum foils ruled out both the internal resistance of the su-percapacitor electrodes and the charge transfer resistance between the electrode and electrolyte. A specific capacitance of 2.61 mF/cm2 at a scan rate of 800 mV/s was obtained from the fabricated elec-trodes, which is further improved through the bending cycles.

  3. Electrochemical properties of seamless three-dimensional carbon nanotubes-grown graphene modified with horseradish peroxidase.

    Science.gov (United States)

    Komori, Kikuo; Terse-Thakoor, Trupti; Mulchandani, Ashok

    2016-10-01

    Horseradish peroxidase (HRP) was immobilized through sodium dodecyl sulfate (SDS) on the surface of a seamless three-dimensional hybrid of carbon nanotubes grown at the graphene surface (HRP-SDS/CNTs/G) and its electrochemical properties were investigated. Compared with graphene alone electrode modified with HRP via SDS (HRP-SDS/G electrode), the surface coverage of electroactive HRP at the CNTs/G electrode surface was approximately 2-fold greater because of CNTs grown at the graphene surface. Based on the increase in the surface coverage of electroactive HRP, the sensitivity to H2O2 at the HRP-SDS/CNTs/G electrode was higher than that at the HRP-SDS/G electrode. The kinetics of the direct electron transfer from the CNTs/G electrode to compound I and II of modified HRP was also analyzed. PMID:27224430

  4. Superior capacitive characteristics of RuO2 nanorods grown on carbon nanotubes

    International Nuclear Information System (INIS)

    Carbon nanotubes (CNTs) were used as the electric double layer capacitor (EDLC) material and were synthesized by using thermal chemical vapor deposition (TCVD). To enhance the EDLC capacity, the ruthenium dioxide (RuO2) nanorods were grown on CNTs by using metal organic chemical vapor deposition (MOCVD). The synthesized CNTs were the principal part and template, and the RuO2 nanorods were grown outwardly from CNTs. The increase of effective specific area between electrode and electrolyte played an important role in enhancing the capacitance. Different concentrations of KOH were used as electrolyte to measure the capacitance to find the variation of capacitance. Moreover, the RuO2/CNT composites demonstrated a stable cycle life. The results showed that the RuO2/CNT composites were a promising supercapacitor device material.

  5. Flexible supercapacitor electrodes with vertically aligned carbon nanotubes grown on aluminum foils

    Directory of Open Access Journals (Sweden)

    Itir Bakis Dogru

    2016-06-01

    Full Text Available In this work, vertically aligned carbon nanotubes (VACNTs grown on aluminum foils were used as flexible supercapacitor electrodes. Aluminum foils were used as readily available, cheap and conductive substrates, and VACNTs were grown directly on these foils through chemical vapor deposition (CVD method. Solution based ultrasonic spray pyrolysis (USP method was used for the deposition of the CNT catalyst. Direct growth of VACNTs on aluminum foils ruled out both the internal resistance of the supercapacitor electrodes and the charge transfer resistance between the electrode and electrolyte. A specific capacitance of 2.61 mF/cm2 at a scan rate of 800 mV/s was obtained from the fabricated electrodes, which is further improved through the bending cycles.

  6. Growth processes and surface properties of diamondlike carbon films

    International Nuclear Information System (INIS)

    In this study, we compare the deposition processes and surface properties of tetrahedral amorphous carbon (ta-C) films from filtered pulsed cathodic arc discharge (PCAD) and hydrogenated amorphous carbon (a-C:H) films from electron cyclotron resonance (ECR)-plasma source ion implantation. The ion energy distributions (IEDs) of filtered-PCAD at various filter inductances and Ar gas pressures were measured using an ion energy analyzer. The IEDs of the carbon species in the absence of background gas and at low gas pressures are well fitted by shifted Maxwellian distributions. Film hardness and surface properties show a clear dependence on the IEDs. ta-C films with surface roughness at an atomic level and thin (0.3-0.9 nm) graphitelike layers at the film surfaces were deposited at various filter inductances in the highly ionized plasmas with the full width at half maximum ion energy distributions of 9-16 eV. The a-C:H films deposited at higher H/C ratios of reactive gases were covered with hydrogen and sp3 bonded carbon-enriched layers due to the simultaneous interaction of hydrocarbon species and atomic hydrogen. The effects of deposited species and ion energies on film surface properties were analyzed. Some carbon species have insufficient energies to break the delocalized π(nC) bonds at the graphitelike film surface, and they can govern film formation via surface diffusion and coalescence of nuclei. Dangling bonds created by atomic hydrogen lead to uniform chemisorption of hydrocarbon species from the ECR plasmas. The deposition processes of ta-C and a-C:H films are discussed on the basis of the experimental results

  7. Co-sputtered MoRe thin films for carbon nanotube growth-compatible superconducting coplanar resonators.

    Science.gov (United States)

    Götz, K J G; Blien, S; Stiller, P L; Vavra, O; Mayer, T; Huber, T; Meier, T N G; Kronseder, M; Strunk, Ch; Hüttel, A K

    2016-04-01

    Molybdenum rhenium alloy thin films can exhibit superconductivity up to critical temperatures of [Formula: see text]. At the same time, the films are highly stable in the high-temperature methane/hydrogen atmosphere typically required to grow single wall carbon nanotubes. We characterize molybdenum rhenium alloy films deposited via simultaneous sputtering from two sources, with respect to their composition as function of sputter parameters and their electronic dc as well as GHz properties at low temperature. Specific emphasis is placed on the effect of the carbon nanotube growth conditions on the film. Superconducting coplanar waveguide resonators are defined lithographically; we demonstrate that the resonators remain functional when undergoing nanotube growth conditions, and characterize their properties as function of temperature. This paves the way for ultra-clean nanotube devices grown in situ onto superconducting coplanar waveguide circuit elements. PMID:26901846

  8. Co-sputtered MoRe thin films for carbon nanotube growth-compatible superconducting coplanar resonators

    Science.gov (United States)

    Götz, K. J. G.; Blien, S.; Stiller, P. L.; Vavra, O.; Mayer, T.; Huber, T.; Meier, T. N. G.; Kronseder, M.; Strunk, Ch; Hüttel, A. K.

    2016-04-01

    Molybdenum rhenium alloy thin films can exhibit superconductivity up to critical temperatures of {T}{{c}}=15 {{K}}. At the same time, the films are highly stable in the high-temperature methane/hydrogen atmosphere typically required to grow single wall carbon nanotubes. We characterize molybdenum rhenium alloy films deposited via simultaneous sputtering from two sources, with respect to their composition as function of sputter parameters and their electronic dc as well as GHz properties at low temperature. Specific emphasis is placed on the effect of the carbon nanotube growth conditions on the film. Superconducting coplanar waveguide resonators are defined lithographically; we demonstrate that the resonators remain functional when undergoing nanotube growth conditions, and characterize their properties as function of temperature. This paves the way for ultra-clean nanotube devices grown in situ onto superconducting coplanar waveguide circuit elements.

  9. Carbon nanotube film anodes for flexible lithium ion batteries

    Science.gov (United States)

    Yoon, Sora; Lee, Sehyun; Kim, Soyoung; Park, Kyung-Won; Cho, Daehwan; Jeong, Youngjin

    2015-04-01

    In this study, carbon nanotube (CNT) film anodes are prepared for use in flexible lithium ion batteries, and the electrochemical performance of the CNT film anodes is evaluated. The CNT films are synthesized via chemical vapor deposition and direct spinning. The films are heat-treated under a nitrogen atmosphere at a high temperature to study the effects of heat treatment on the battery performance. The electrodes made with the CNT films are characterized via charge-discharge test, cyclic voltammetry, and impedance measurement. The results indicate that batteries with films heat-treated under a nitrogen atmosphere show a higher capacity, which can be a result of their high crystalline perfection. The impedance analysis shows that a lower resistance at the interface can be obtained by using heat-treated films. The charge-discharge tests are carried out by adjusting the rate from C/2 to 10C, and when the rate slows from 10C to 1C, the capacity of the samples largely recovers. The nitrogen/heat-treated CNT film electrodes present a capacity that is twice as high, such as 2C, 5C, and 10C, than untreated CNT film electrodes. These results indicate that the carbon nanotube film anodes have high potential for use in portable and wearable computers due to their flexibility.

  10. Properties of electrophoretically deposited single wall carbon nanotube films

    Energy Technology Data Exchange (ETDEWEB)

    Lim, Junyoung; Jalali, Maryam; Campbell, Stephen A., E-mail: campb001@umn.edu

    2015-08-31

    This paper describes techniques for rapidly producing a carbon nanotube thin film by electrophoretic deposition at room temperature and determines the film mass density and electrical/mechanical properties of such films. The mechanism of electrophoretic deposition of thin layers is explained with experimental data. Also, film thickness is measured as a function of time, electrical field and suspension concentration. We use Rutherford backscattering spectroscopy to determine the film mass density. Films created in this manner have a resistivity of 2.14 × 10{sup −3} Ω·cm, a mass density that varies with thickness from 0.12 to 0.54 g/cm{sup 3}, and a Young's modulus between 4.72 and 5.67 GPa. The latter was found to be independent of thickness from 77 to 134 nm. We also report on fabricating free-standing films by removing the metal seed layer under the CNT film, and selectively etching a sacrificial layer. This method could be extended to flexible photovoltaic devices or high frequency RF MEMS devices. - Highlights: • We explain the electrophoretic deposition process and mechanism of thin SWCNT film deposition. • Characterization of the SWCNT film properties including density, resistivity, transmittance, and Young's modulus. • The film density and resistivity are found to be a function of the film thickness. • Techniques developed to create free standing layers of SW-CNTs for flexible electronics and mechanical actuators.

  11. Properties of electrophoretically deposited single wall carbon nanotube films

    International Nuclear Information System (INIS)

    This paper describes techniques for rapidly producing a carbon nanotube thin film by electrophoretic deposition at room temperature and determines the film mass density and electrical/mechanical properties of such films. The mechanism of electrophoretic deposition of thin layers is explained with experimental data. Also, film thickness is measured as a function of time, electrical field and suspension concentration. We use Rutherford backscattering spectroscopy to determine the film mass density. Films created in this manner have a resistivity of 2.14 × 10−3 Ω·cm, a mass density that varies with thickness from 0.12 to 0.54 g/cm3, and a Young's modulus between 4.72 and 5.67 GPa. The latter was found to be independent of thickness from 77 to 134 nm. We also report on fabricating free-standing films by removing the metal seed layer under the CNT film, and selectively etching a sacrificial layer. This method could be extended to flexible photovoltaic devices or high frequency RF MEMS devices. - Highlights: • We explain the electrophoretic deposition process and mechanism of thin SWCNT film deposition. • Characterization of the SWCNT film properties including density, resistivity, transmittance, and Young's modulus. • The film density and resistivity are found to be a function of the film thickness. • Techniques developed to create free standing layers of SW-CNTs for flexible electronics and mechanical actuators

  12. Influence of the incident angle of energetic carbon ions on the properties of tetrahedral amorphous carbon (ta-C) films

    Science.gov (United States)

    Liu, Dongping; Benstetter, Günther; Lodermeier, Edgar; Vancea, Johann

    2003-09-01

    Tetrahedral amorphous carbon (ta-C) films have been grown on Ar+-beam-cleaned silicon substrates by changing the incident angle of energetic carbon ions produced in the plasma of pulsed cathodic vacuum arc discharge. Their surface roughness, deposition rate, composition, and mechanical and frictional properties as a function of the incident angle of energetic carbon ions were reported. The substrate holder can be rotated, and so an angle of deposition was defined as the angle of ion flux with respect to the substrate surface. While the deposition angle is varied from 20° to 59°, the root-mean-square (rms) roughness decreases from 0.5 to 0.1 nm, then it turns to increase at a slow rate when the deposition angle is over 77°. The variation correlates well with the one of hardness with the deposition angle and the films with lower rms roughness exhibit the higher hardness. The soft graphite-like surface layers existing at the surfaces of these films were revealed by atomic force microscopy-based nanowear tests and their thickness increases from 0.35 to 2.9 nm with the deposition angle decreasing from 90° to 30°. The soft surface layer thickness can have a great effect on the sp3 contents measured by x-ray photoelectron spectra. Nanoscale friction coefficient measurements were performed from lateral force microscopy by using a V-shaped Si3N4 cantilever. The low friction coefficients (0.076-0.093) of ta-C films can be attributed to their graphite-like surface structure. The implications of these results on the mechanisms proposed for the film formation were discussed.

  13. X-ray photoelectron spectroscopy on the Co film grown on the nitrogen pre-covered Cu(100) surface

    International Nuclear Information System (INIS)

    Full text: Surface structures and electronic structures have been characterized on the Co thin films grown on the nitrogen pre-covered Cu(100) surface by means mainly of the X-ray photoelectron spectroscopy (XPS). From the analysis of the XPS signal ratio of N1s/Cu2p and N1s/Cu3p, it is concluded that the most nitrogen atoms segregate onto the top of the deposited Co films, like as the case of the Co deposition on the oxygen pre-covered Cu(100) surface. While it has been known that the clean and oxygen- adsorbed Co thin film shows the satellite peaks on the Co2p spectrum with the separation of 3eV from the main peaks, we observed the separation of 4eV on the nitrogen-adsorbed Co film. Figure 1 shows the series of the XPS spectra of Co2p taken on the nitrogenadsorbed Co films with changing the Co film thickness. While the 3eV satellite is seen on the submonolayer Co film, the 4eV satellite appears on the thicker Co films ( > 4.5ML). We may ascribe this newly found 4eV satellite to the adsorbate-induced two hole binding sate, instead of the size effect suggested on the clean and oxygen-adsorbed Co film

  14. Semipolar and nonpolar GaN epi-films grown on m-sapphire by plasma assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    We hereby report the development of non-polar epi-GaN films of usable quality, on an m-plane sapphire. Generally, it is difficult to obtain high-quality nonpolar material due to the planar anisotropic nature of the growth mode. However, we could achieve good quality epi-GaN films by involving controlled steps of nitridation. GaN epilayers were grown on m-plane (10-10) sapphire substrates using plasma assisted molecular beam epitaxy. The films grown on the nitridated surface resulted in a nonpolar (10-10) orientation while without nitridation caused a semipolar (11-22) orientation. Room temperature photoluminescence study showed that nonpolar GaN films have higher value of compressive strain as compared to semipolar GaN films, which was further confirmed by room temperature Raman spectroscopy. The room temperature UV photodetection of both films was investigated by measuring the I-V characteristics under UV light illumination. UV photodetectors fabricated on nonpolar GaN showed better characteristics, including higher external quantum efficiency, compared to photodetectors fabricated on semipolar GaN. X-ray rocking curves confirmed better crystallinity of semipolar as compared to nonpolar GaN which resulted in faster transit response of the device

  15. Stacking faults in an epitaxially grown PbTiO3 thick film and their size distribution

    International Nuclear Information System (INIS)

    Highlights: ► We investigate the microstructure of an epitaxially grown PbTiO3 thick film by using TEM. ► We observed a number of stacking faults parallel to the (0 0 1) plane of the PbTiO3 in the film. ► We determined the size distribution of stacking faults as a function of the position in the film. - Abstract: The microstructure of an epitaxial PbTiO3 thick film, grown on a SrRuO3/SrTiO3 substrate at 600 °C by pulsed-MOCVD method, was investigated by using transmission electron microscopy. A number of extrinsic or intrinsic stacking faults were observed in the epitaxial PbTiO3 thick film and they were parallel to the (0 0 1) plane of the PbTiO3. We also investigated the size distribution of these stacking faults. The width of these stacking faults along the [1 0 0] axis of the PbTiO3 was very small, ranging from 2 to 13 nm. It was also revealed that the size distribution of stacking faults depends on the position in the film: near the surface, near the substrate, near threading dislocations, and near 90° domain boundaries.

  16. Annealing Effect on the Structural and Optical Properties of Sputter-Grown Bismuth Titanium Oxide Thin Films

    Directory of Open Access Journals (Sweden)

    José E. Alfonso

    2014-04-01

    Full Text Available The aim of this work is to assess the evolution of the structural and optical properties of BixTiyOz films grown by rf magnetron sputtering upon post-deposition annealing treatments in order to obtain good quality films with large grain size, low defect density and high refractive index similar to that of single crystals. Films with thickness in the range of 220–250 nm have been successfully grown. After annealing treatment at 600 °C the films show excellent transparency and full crystallization. It is shown that to achieve larger crystallite sizes, up to 17 nm, it is better to carry the annealing under dry air than under oxygen atmosphere, probably because the nucleation rate is reduced. The refractive index of the films is similar under both atmospheres and it is very high (n =2.5 at 589 nm. However it is still slightly lower than that of the single crystal value due to the polycrystalline morphology of the thin films.

  17. Comparative study of magnetite (Fe3O4) thin films grown by pulsed laser ablation and sputtering

    Science.gov (United States)

    Bohra, Murtaza; Varun Karthik Y., S.; Haveesh, G.; Tarun Y. S., N.; Prasad, D. V. B.; Chowdhury, D. Roy; Prasad, K. Eswar

    2016-05-01

    Comparative study of magnetite (Fe3O4) thin films grown by pulsed laser ablation (PLD) and radio frequency (RF)-sputtering of α-Fe2O3 target have been investigated. We have found strong correlation between RF power (P) of sputtering and substrate temperature (Ts) of PLD films on their structural and magnetic properties. Films grown at low P and Ts are dominated by antiferromagnetic α-Fe2O3 phase while ferrimagnetic Fe3O4 phase is dominant at high P and Ts Post-annealing in H2/H2O atmosphere at 450 °C, these films show single phase Fe3O4 but RF power and substrate temperature still play a significant role. With increasing P and Ts values, the orientation of Fe3O4 films change from (110) to (111) followed by complete randomizations. These (110) to (111) orientations affect magnetic properties differently above Verwey transition temperature of 120 K. The RF-power and substrate temperature have the same influence on the physical properties of Fe3O4 films, as both are related to thermal energy.

  18. Interfacially engineered oxygen octahedral rotations and their impact on strain relief in coherently grown SrRu O3 films

    Science.gov (United States)

    Kan, Daisuke; Wakabayashi, Yusuke; Tajiri, Hiroo; Shimakawa, Yuichi

    2016-07-01

    We report synchrotron x-ray diffraction investigations of interfacially engineered oxygen octahedral rotations and their impact on strain relief in perovskite SrRu O3 films. We show that octahedral rotations with distinct patterns and magnitudes can be accommodated into coherently grown films. The SrRu O3 film grown directly on the GdSc O3 substrate has the Ru O6 octahedral rotation with the a-b+c- pattern in the Glazer notation and the rotation angles of αrot=6.6 ±0 .2∘ , βrot=5.5 ±0 .2∘ , and γrot=3.6 ±0 .2∘ . On the other hand, when a 1-nm-thick BaTi O3 layer without Ti O6 rotations is inserted between the SrRu O3 and GdSc O3 , the SrRu O3 has the Ru O6 rotation with a-b0c+ , and αrot=5.6 ±0 .8∘ and γrot=3.6 ±0 .8∘ . These results indicate that there are some degrees of freedom in the octahedral rotations accommodated in SrRu O3 depending on the interface structure and that the γrot rotations play the important roles in the film's structural properties when the rotation about the [010] pc axis is blocked. We also found that the strain relief in the film is influenced by the interfacially engineered octahedral rotations. The interfacial BaTi O3 layer results in the in-plane periodic lattice modulation in the t-SRO film, allowing for the anisotropic relief of the substrate-induced strain. The results highlight the importance of the interface structure as a factor, determining not only octahedral rotations in coherently grown SRO films but also the strain reliefs in them.

  19. Deposition And Characterization Of Ultra Thin Diamond Like Carbon Films

    Science.gov (United States)

    Tomcik, B.

    2010-07-01

    Amorphous hydrogenated and/or nitrogenated carbon films, a-C:H/a-C:N, in overall thickness up to 2 nm are materials of choice as a mechanical and corrosion protection layer of the magnetic media in modern hard disk drive disks. In order to obtain high density and void-free films the sputtering technology has been replaced by different plasma and ion beam deposition techniques. Hydrocarbon gas precursors, like C2H2 or CH4 with H2 and N2 as reactive gases are commonly used in Kaufman DC ion and RF plasma beam sources. Optimum incident energy of carbon ions, C+, is up to 100 eV while the typical ion current densities during the film formation are in the mA/cm2 range. Other carbon deposition techniques, like filtered cathodic arc, still suffer from co-deposition of fine nanosized carbon clusters (nano dust) and their improvements are moving toward arc excitation in the kHz and MHz frequency range. Non-destructive film analysis like μ-Raman optical spectroscopy, spectroscopic ellipsometry, FTIR and optical surface analysis are mainly used in the carbon film characterization. Due to extreme low film thicknesses the surface enhanced Raman spectroscopy (SERS) with pre-deposited layer of Au can reduce the signal collection time and minimize photon-induced damage during the spectra acquisition. Standard approach in the μ-Raman film evaluation is the measurement of the position (shift) and area of D and G-peaks under the deconvoluted overall carbon spectrum. Also, a slope of the carbon spectrum in the 1000-2000 cm-1 wavenumber range is used as a measure of the hydrogen intake within a film. Diamond like carbon (DLC) film should possess elasticity and self-healing properties during the occasional crash of the read-write head flying only couple of nanometers above the spinning film. Film corrosion protection capabilities are mostly evaluated by electrochemical tests, potentio-dynamic and linear polarization method and by business environmental method. Corrosion mechanism

  20. Study on Methods to Strenthen and Toughen Sapphire Crystal by Carbon Doped Grown by Temperature Gradient Technique (TGT

    Directory of Open Access Journals (Sweden)

    HU Ke-Yan, XU Jun, TANG Hui-Li, LI Hong-Jun, ZOU Yu-Qi, YANG Qiu-Hong

    2013-03-01

    Full Text Available Mechanical properties of carbon-doped sapphire crystals with different carbon concentrations were studied at room temperature. The present work showed that the fracture strength and fracture toughness of as grown crystals were significantly improved by carbon doping and the visible-infrared optical property did not adversely affect. When the concentration of doped carbon was 5×10-3, the fracture strength and fracture toughness were increased to 752 MPa and 2.81 MPa·m1/2 in average, respectively, and the transmition of visible-infrared was about 80%. Appropriate carbon dopant in the crystals played the roles of clearance ions and created blocking effect to the sapphires cracking, which improved fracture strength and fracture toughness of sapphires at room temperature. However the mechanical properties and optical properties declined when carbon dopant was excessive, due to carbon inclusions grown from composition segregation.

  1. Field Emission Properties of Nitrogen-doped Amorphous Carbon Films

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    Nitrogen-doped amorphous carbon thin films are deposited on the ceramic substrates coated with Ti film by using direct current magnetron sputtering technique at N2 and Ar gas mixture atmosphere during deposition. The field emission properties of the deposited films have been investigated. The threshold field as low as 5.93V/μm is obtained and the maximum current density increases from 4μA/cm2 to 20.67μA/cm2 at 10.67V/μm comparing with undoped amorphous film. The results show that nitrogen doping plays an important role in field emission of amorphous carbon thin films.

  2. Green emission in carbon doped ZnO films

    Energy Technology Data Exchange (ETDEWEB)

    Tseng, L. T.; Yi, J. B., E-mail: jiabao.yi@unsw.edu.au; Zhang, X. Y.; Xing, G. Z.; Luo, X.; Li, S. [School of Materials Science and Engineering, University of New South Wales, Kensington, NSW, 2052 (Australia); Fan, H. M. [School of Chemical Engineering, Northwest University, Xi' an 710069 (China); Herng, T. S.; Ding, J. [Department of Materials Science and Engineering, National University of Singapore, 119260 (Singapore); Ionescu, M. [Australian Nuclear Science and Technology Organization, (ANSTO), New Illawarra Road, Lucas Heights, NSW 2234 (Australia)

    2014-06-15

    The emission behavior of C-doped ZnO films, which were prepared by implantation of carbon into ZnO films, is investigated. Orange/red emission is observed for the films with the thickness of 60–100 nm. However, the film with thickness of 200 nm shows strong green emission. Further investigations by annealing bulk ZnO single crystals under different environments, i.e. Ar, Zn or C vapor, indicated that the complex defects based on Zn interstitials are responsible for the strong green emission. The existence of complex defects was confirmed by electron spin resonance (ESR) and low temperature photoluminescence (PL) measurement.

  3. Green emission in carbon doped ZnO films

    Directory of Open Access Journals (Sweden)

    L. T. Tseng

    2014-06-01

    Full Text Available The emission behavior of C-doped ZnO films, which were prepared by implantation of carbon into ZnO films, is investigated. Orange/red emission is observed for the films with the thickness of 60–100 nm. However, the film with thickness of 200 nm shows strong green emission. Further investigations by annealing bulk ZnO single crystals under different environments, i.e. Ar, Zn or C vapor, indicated that the complex defects based on Zn interstitials are responsible for the strong green emission. The existence of complex defects was confirmed by electron spin resonance (ESR and low temperature photoluminescence (PL measurement.

  4. How do vapor grown carbon nanofibers nucleate and grow from deoiled asphalt?

    International Nuclear Information System (INIS)

    Research highlights: → A modified growth mechanism of carbon nanofibers was proposed. → Growth process includes (1) pyrolysis and aggregation, (2) nucleation, coalescence and self-assembly and (3) deveplopment and maturation. → The nucleation and rearrangement of graphitic layers depend on the crystal orientation of the metal nanoparticles. - Abstract: During the experiments aimed at understanding the evolution mechanism by which vapor grown carbon nanofibers (VGCNFs) nucleate and grow, a series of carbon nanomaterials were synthesized by chemical vapor deposition (CVD) using deoiled asphalt (DOA) as carbon source and ferrocene as catalyst precursor with an experimental strategy developed to quench the CVD at different deposition times (3-30 min). The morphology and microstructure of the products were investigated by field emission scanning electron microscope, high resolution transmission electron microscope and X-ray powder diffractometer. The formation of hollow/metal-encapsulating carbon nanoparticles at short deposition time (3 min) of CVD and the subsequent evolution of these nanoparticles into carbon nanotubes/nanofibers at longer deposition time suggest a multi-step growth model for VGCNFs, which includes the stages of (1) pyrolysis and aggregation, (2) nucleation, coalescence and self-assembly, and (3) development and maturation. At first, C, Fe and Fe/C clusters are produced by decomposition and agglomeration of C and Fe species from the pyrolysis of DOA and ferrocene; second, the carbon nanoparticles are self-assembled into nanowires with dispersive metal nanoparticles, which are further developed into nanotubes for structural stability and minimum surface energy, meanwhile fishbone-like CNFs might be formed by rearranging carbon layers at an angle against the tube axis under the nucleation of small graphitic layers on certain crystal orientation of the metal particles; finally, CNFs are formed by the synergistic action of metal catalysis and

  5. Effect of tin doping on optical properties of nanostructured ZnO thin films grown by spray pyrolysis technique

    Energy Technology Data Exchange (ETDEWEB)

    Bedia, F.Z.; Bedia, A. [URMER, Abou-Bakr Belkaid University, 13000 Tlemcen (Algeria); Maloufi, N., E-mail: nabila.maloufi@univ-lorraine.fr [Laboratoire d’Étude des Microstructures et de Mécanique des Matériaux (LEM3), UMR-CNRS 7239, Université de Lorraine, 57045 Metz (France); Laboratory of Excellence on Design of Alloy Metals for low-mAss Structures (DAMAS), Université de Lorraine (France); Aillerie, M.; Genty, F. [LMOPS-EA 4423, Université de Lorraine, 57070 Metz (France); Supelec, LMOPS, 57070 Metz (France); Benyoucef, B. [URMER, Abou-Bakr Belkaid University, 13000 Tlemcen (Algeria)

    2014-12-15

    Highlights: • (0–2%) Sn-doped ZnO films grown by spray pyrolysis on glass substrates. • Transmittance up to 93% in visible region, sharp absorption edge at 360 nm. • Blue shift of optical band gap: E{sub g} = 3.27 eV for 0% Sn; Eg{sub max} = 3.30 eV for 0.5% Sn. • All the optical parameters reach threshold values for 0.5% Sn-doped ZnO films. • Good physical properties suited for films integration in optoelectronic devices. - Abstract: Sn-doped ZnO thin films with 0%, 0.5%, 1%, 1.5% and 2% Sn were grown by spray pyrolysis method on glass substrates under optimized conditions. High resolution Field Effect Scanning Electron Microscopy characterization showed that the films consist of hexagonal-like grains. A comprehensive study of the optical properties was performed and the dispersion constants were determined. The effect of Sn content on the optical band gap and the optical constants (refractive index, extinction coefficient, dielectric constants, and dispersion parameters) was studied. These Sn-doped ZnO thin films are highly transparent (73–93%) in the visible region. A blue shift of the optical band gap, attributed to the Burstein Moss effect, was observed for the Sn-doped films. All the optical dispersion parameters depend on the Sn content of the films, but were found to reach threshold values at a Sn content of 0.5%. These optical parameters are discussed in terms of the single oscillator model. This study demonstrated that this 0.5% Sn-doped ZnO thin film has enhanced physical properties, allowing its better integration in optoelectronic devices.

  6. Effect of tin doping on optical properties of nanostructured ZnO thin films grown by spray pyrolysis technique

    International Nuclear Information System (INIS)

    Highlights: • (0–2%) Sn-doped ZnO films grown by spray pyrolysis on glass substrates. • Transmittance up to 93% in visible region, sharp absorption edge at 360 nm. • Blue shift of optical band gap: Eg = 3.27 eV for 0% Sn; Egmax = 3.30 eV for 0.5% Sn. • All the optical parameters reach threshold values for 0.5% Sn-doped ZnO films. • Good physical properties suited for films integration in optoelectronic devices. - Abstract: Sn-doped ZnO thin films with 0%, 0.5%, 1%, 1.5% and 2% Sn were grown by spray pyrolysis method on glass substrates under optimized conditions. High resolution Field Effect Scanning Electron Microscopy characterization showed that the films consist of hexagonal-like grains. A comprehensive study of the optical properties was performed and the dispersion constants were determined. The effect of Sn content on the optical band gap and the optical constants (refractive index, extinction coefficient, dielectric constants, and dispersion parameters) was studied. These Sn-doped ZnO thin films are highly transparent (73–93%) in the visible region. A blue shift of the optical band gap, attributed to the Burstein Moss effect, was observed for the Sn-doped films. All the optical dispersion parameters depend on the Sn content of the films, but were found to reach threshold values at a Sn content of 0.5%. These optical parameters are discussed in terms of the single oscillator model. This study demonstrated that this 0.5% Sn-doped ZnO thin film has enhanced physical properties, allowing its better integration in optoelectronic devices

  7. Effect of growth temperature on defects in epitaxial GaN film grown by plasma assisted molecular beam epitaxy

    OpenAIRE

    S. S. Kushvaha; P.Pal; Shukla, A. K.; Joshi, Amish G; Govind Gupta; M. Kumar; Singh, S.; Bipin K. Gupta; Haranath, D.

    2014-01-01

    We report the effect of growth temperature on defect states of GaN epitaxial layers grown on 3.5 μm thick GaN epi-layer on sapphire (0001) substrates using plasma assisted molecular beam epitaxy. The GaN samples grown at three different substrate temperatures at 730, 740 and 750 °C were characterized using atomic force microscopy and photoluminescence spectroscopy. The atomic force microscopy images of these samples show the presence of small surface and large hexagonal pits on the GaN film s...

  8. Increasing mouse embryonic fibroblast cells adhesion on superhydrophilic vertically aligned carbon nanotube films

    International Nuclear Information System (INIS)

    We have analyzed the adhesion of mouse embryonic fibroblasts (MEFs) genetically modified by green fluorescence protein (GFP) gene cultured on vertically-aligned carbon nanotubes (VACNTs) after 6 days. The VACNTs films grown on Ti were obtained by microwave plasma chemical vapor deposition process using Fe catalyst and submitted to an oxygen plasma treatment, for 2 min, at 400 V and 80 mTorr, to convert them to superhydrophilic. Cellular adhesion and morphology were analyzed by scanning electron, fluorescence microscopy, and thermodynamics analysis. Characterizations of superhydrophilic VACNTs films were evaluated by contact angle and X-Ray Photoelectron Spectroscopy. Differences of crowd adhered cells, as well as their spreading on superhydrophilic VACNTs scaffolds, were evaluated using focal adhesion analysis. This study was the first to demonstrate, in real time, that the wettability of VACNTs scaffolds might have enhanced and differential adherence patterns to the MEF-GFP on VACNTs substrates. Highlights: → A simple oxygen plasma treatment was used to obtain superhydrophilic CNT films. → Superhydrophilic CNTs films were successfully produced by incorporation of carboxylic groups. → Cellular adhesion on superhydrophilic VACNT films was analyzed in real time. → Wettability of CNT films directly affects the cellular migration, proliferation and adhesion.

  9. Increasing mouse embryonic fibroblast cells adhesion on superhydrophilic vertically aligned carbon nanotube films

    Energy Technology Data Exchange (ETDEWEB)

    Lobo, A.O., E-mail: loboao@yahoo.com [Laboratory of Biomedical Nanotechnology (NanoBio), Instituto de Pesquisa e Desenvolvimento (IP and D), Universidade do Vale do Paraiba UniVap, Avenida Shishima Hifumi 2911, Sao Jose dos Campos, 12244-000, SP (Brazil) and Laboratory of Biomedical Vibrational Spectroscopy (LEVB), Instituto de Pesquisa e Desenvolvimento (IP and D), Universidade do Vale do Paraiba UniVap, Avenida Shishima Hifumi 2911, Sao Jose dos Campos, 12244-000, SP (Brazil); Marciano, F.R. [Laboratory of Biomedical Nanotechnology (NanoBio), Instituto de Pesquisa e Desenvolvimento (IP and D), Universidade do Vale do Paraiba UniVap, Avenida Shishima Hifumi 2911, Sao Jose dos Campos, 12244-000, SP (Brazil); Laboratory of Biomedical Vibrational Spectroscopy LEVB, Instituto de Pesquisa e Desenvolvimento (IP and D), Universidade do Vale do Paraiba (UniVap), Avenida Shishima Hifumi 2911, Sao Jose dos Campos, 12244-000, SP (Brazil); Ramos, S.C. [Laboratorio Associado de Sensores e Materiais (LAS), Instituto Nacional de Pesquisas Espaciais (INPE), Avenida dos Astronautas 1758, Sao Jose dos Campos, 12.245-970, SP (Brazil); Machado, M.M. [Centro Multidisciplinar para Investigacao Biologica na Area da Ciencia em Animais de Laboratorio (CEMIB), Universidade Estadual de Campinas (UNICAMP), Rua 05 de Junho s/no, Cidade Universitaria ' Zeferino Vaz' , 13083-877, Campinas (Brazil); Corat, E.J. [Laboratorio Associado de Sensores e Materiais (LAS), Instituto Nacional de Pesquisas Espaciais (INPE), Avenida dos Astronautas 1758, Sao Jose dos Campos, 12.245-970, SP (Brazil); Corat, M.A.F. [Centro Multidisciplinar para Investigacao Biologica na Area da Ciencia em Animais de Laboratorio (CEMIB), Universidade Estadual de Campinas (UNICAMP), Rua 05 de Junho s/no, Cidade Universitaria ' Zeferino Vaz' , 13083-877, Campinas (Brazil)

    2011-10-10

    We have analyzed the adhesion of mouse embryonic fibroblasts (MEFs) genetically modified by green fluorescence protein (GFP) gene cultured on vertically-aligned carbon nanotubes (VACNTs) after 6 days. The VACNTs films grown on Ti were obtained by microwave plasma chemical vapor deposition process using Fe catalyst and submitted to an oxygen plasma treatment, for 2 min, at 400 V and 80 mTorr, to convert them to superhydrophilic. Cellular adhesion and morphology were analyzed by scanning electron, fluorescence microscopy, and thermodynamics analysis. Characterizations of superhydrophilic VACNTs films were evaluated by contact angle and X-Ray Photoelectron Spectroscopy. Differences of crowd adhered cells, as well as their spreading on superhydrophilic VACNTs scaffolds, were evaluated using focal adhesion analysis. This study was the first to demonstrate, in real time, that the wettability of VACNTs scaffolds might have enhanced and differential adherence patterns to the MEF-GFP on VACNTs substrates. Highlights: {yields} A simple oxygen plasma treatment was used to obtain superhydrophilic CNT films. {yields} Superhydrophilic CNTs films were successfully produced by incorporation of carboxylic groups. {yields} Cellular adhesion on superhydrophilic VACNT films was analyzed in real time. {yields} Wettability of CNT films directly affects the cellular migration, proliferation and adhesion.

  10. Effect of Substrate Morphology on Growth and Field Emission Properties of Carbon Nanotube Films

    Directory of Open Access Journals (Sweden)

    Kumar Vikram

    2008-01-01

    Full Text Available AbstractCarbon nanotube (CNT films were grown by microwave plasma-enhanced chemical vapor deposition process on four types of Si substrates: (i mirror polished, (ii catalyst patterned, (iii mechanically polished having pits of varying size and shape, and (iv electrochemically etched. Iron thin film was used as catalytic material and acetylene and ammonia as the precursors. Morphological and structural characteristics of the films were investigated by scanning and transmission electron microscopes, respectively. CNT films of different morphology such as vertically aligned, randomly oriented flowers, or honey-comb like, depending on the morphology of the Si substrates, were obtained. CNTs had sharp tip and bamboo-like internal structure irrespective of growth morphology of the films. Comparative field emission measurements showed that patterned CNT films and that with randomly oriented morphology had superior emission characteristics with threshold field as low as ~2.0 V/μm. The defective (bamboo-structure structures of CNTs have been suggested for the enhanced emission performance of randomly oriented nanotube samples.

  11. Spatially resolved localized vibrational mode spectroscopy of carbon in liquid encapsulated Czochralski grown gallium arsenide wafers

    International Nuclear Information System (INIS)

    Substitutional carbon on an arsenic lattice site is the shallowest and one of the most dominant acceptors in semi-insulating Liquid Encapsulated Czochralski (LEC) GaAs. However, the role of this acceptor in determining the well known ''W'' shape spatial variation of neutral EL2 concentration along the diameter of a LEC wafer is not known. In this thesis, we attempt to clarify the issue of the carbon acceptor's effect on this ''W'' shaped variation by measuring spatial profiles of this acceptor along the radius of three different as-grown LEC GaAs wafers. With localized vibrational mode absorption spectroscopy, we find that the profile of the carbon acceptor is relatively constant along the radius of each wafer. Average values of concentration are 8 x 10E15 cm-3, 1.1 x 10E15 cm-3, and 2.2 x 10E15 cm-3, respectively. In addition, these carbon acceptor LVM measurements indicate that a residual donor with concentration comparable to carbon exists in these wafers and it is a good candidate for the observed neutral EL2 concentration variation. 22 refs., 39 figs

  12. Structural and magnetic properties of SmCo-based magnetic films grown by electron-beam evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Saravanan, P., E-mail: psdrdo@gmail.com [Defence Metallurgical Research Laboratory, Hyderabad 500058 (India); Vinod, V.T.P.; Černík, Miroslav [Institute for Nanomaterials, Advanced Technologies and Innovation, Department of Natural Sciences, Technical University of Liberec, Studentská 1402/2, Liberec 1, 461 17 (Czech Republic); Vishnuraj, R.; Arout Chelvane, J.; Kamat, S.V. [Defence Metallurgical Research Laboratory, Hyderabad 500058 (India); Hsu, Jen-Hwa, E-mail: jhhsu@phys.ntu.edu.tw [Department of Physics, National Taiwan University, Taipei 106, Taiwan (China)

    2015-07-01

    Sub-micron thick Sm–Co films (200 and 300 nm) with selective phase composition are grown on Si (100) substrates by electron-beam evaporation using Sm-lean alloy targets such as Sm{sub 4}Co{sub 96} and Sm{sub 8}Co{sub 92}. The structural and magnetic properties of Sm–Co films are characterized by x-ray diffraction (XRD), field-emission scanning electron microscopy (FESEM) and super-conducting quantum interference device (SQUID) magnetometer. The Sm–Co films obtained with the Sm{sub 4}Co{sub 96} target exhibit Sm{sub 2}Co{sub 17} as a prominent phase; while the films produced with the Sm{sub 8}Co{sub 92} target show Sm{sub 2}Co{sub 7} as a major phase. Both the Sm–Co films reveal granular morphology; however, the estimated grain size values are slightly lower in the case of Sm{sub 2}Co{sub 7} films, irrespective of their thicknesses. Coercivity (H{sub c}) values of 1.48 and 0.9 kOe are achieved for the as-grown 200-nm thick Sm{sub 2}Co{sub 17} and Sm{sub 2}Co{sub 7}-films. Temperature-dependent magnetization studies confirm that the demagnetization behaviors of these films are consistent with respect to the identified phase composition. Upon rapid thermal annealing, maximum H{sub c} value of 8.4 kOe is achieved for the 200 nm thick Sm{sub 2}Co{sub 17}-films. As far as e-beam evaporated Sm–Co films are concerned, this H{sub c} value is one of the best values reported so far. - Highlights: • Electron-beam evaporation was exploited to grow sub-μm thick Sm–Co films. • Sm{sub 2}Co{sub 7} and Sm{sub 2}Co{sub 17} magnetic phases were crystallized using Sm-lean alloy targets. • Both 200 and 300-nm thick Sm–Co films revealed distinct granular morphology. • Sm–Co films of lower thickness exhibited high H{sub c} and low M{sub s} and vice-versa. • Coercivity value of 8.4 kOe achieved for the 200-nm thick Sm{sub 2}Co{sub 17}-films after RTA.

  13. Hydroxyapatite growth on multiwall carbon nanotubes grown on titanium fibers from a titanium sheet

    KAUST Repository

    Chetibi, Loubna

    2013-09-27

    Nano-hydroxyapatite (HA) was grown on functionalized multiwalled carbon nanotubes (MWCNTs) deposited on TiO2 nanofibers (NFs) that were hydrothermally grown on Ti metal sheets. The HA was electrochemically grown on the MWCNTs/TiO2 porous layer. It was found that the HA grows on the MWCNTs/TiO2 NFs in the form of dense coating with nanorice grain-shaped. The incorporation of MWCNTs between HA and TiO2 NFs has led to higher adhesion strength as measured by micro-scratching test indicating the benefit of MWCNTs on the improving the bonding strength of HA layer. The obtained coatings exhibit excellent corrosion resistance in simulated body fluid. It is expected that this simple route for preparing the new HA/MWCNTs/TiO2/Ti-layered structure might be used not only in the biomedical field, but also in catalysis and biological sensing among others. © 2013 Springer Science+Business Media New York.

  14. Optical study of defects in nano-diamond films grown in linear antenna microwave plasma CVD from H2/CH4/CO2 gas mixture

    International Nuclear Information System (INIS)

    We present the study on optical quality of nanocrystalline diamond (NCD) films with submicron grain size grown from H2/CH4/CO2 gas mixture on alkali-free borosilicate glass substrates using the commercially available large area linear antenna pulsed microwave plasma chemical vapor deposition (CVD) system. The NCD films were characterized by Raman spectroscopy, atomic force microscopy, and scanning electron microscopy. The NCD layers are optically transparent and show low optical scattering. The defect states measured by photo-thermal deflection spectroscopy (PDS) and dual beam photocurrent spectroscopy (DBPS) are dominated by the non-diamond carbon phases localized at grain boundaries with the characteristic shape of the optical absorption spectrum and the photo-ionization threshold in a near infrared region. The sp2-related defect density increases for samples grown at higher pressure. From DBPS we estimate the concentration of substitutional nitrogen to be below 10 ppm. The optimized NCD layers show the photoionization threshold in UV region above 5 eV and a broad exponential tail below 5 eV. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  15. Effects of vapor grown carbon nanofibers on electrical and mechanical properties of a thermoplastic elastomer

    Science.gov (United States)

    Basaldua, Daniel Thomas

    Carbon nanofiber (CNF) reinforced composites are exceptional materials that exhibit superior properties compared to conventional composites. This paper presents the development of a vapor grown carbon nanofiber (VGCNF) thermoplastic polyurethane (TPU) composite by a melt mixing process. Dispersion and distribution of CNFs inside the TPU matrix were examined through scanning electron microscopy to determine homogeneity. The composite material underwent durometer, thermal gravimetric analysis, differential scanning calorimetry, heat transfer, hysteresis, dynamic modulus, creep, tensile, abrasion, and electrical conductivity testing to characterize its properties and predict behavior. The motivation for this research is to develop an elastomer pad that is an electrically conductive alternative to the elastomer pads currently used in railroad service. The material had to be a completely homogenous electrically conductive CNF composite that could withstand a harsh dynamically loaded environment. The new material meets mechanical and conductive requirements for use as an elastomer pad in a rail suspension.

  16. Electric Characteristics of the Carbon Nanotube Network Transistor with Directly Grown ZnO Nanoparticles.

    Science.gov (United States)

    Kim, Un Jeong; Bae, Gi Yoon; Suh, Dong Ik; Park, Wanjun

    2016-03-01

    We report on the electrical characteristics of field effect transistors fabricated with random networks of single-walled carbon nanotubes with surfaces modified by ZnO nanoparticles. ZnO nanoparticles are directly grown on single-walled carbon nanotubes by atomic layer deposition using diethylzinc (DEZ) and water. Electrical observations show that ZnO nanoparticles act as charge transfer sources that provide electrons to the nanotube channel. The valley position in ambipolar transport of nanotube transistors is negatively shifted for 3V due to the electronic n-typed property of ZnO nanoparticles. However, the Raman resonance remains invariant despite the charge transfer effect produced by ZnO nanoparticles. PMID:27455727

  17. Effect of oxygen plasma on field emission characteristics of single-wall carbon nanotubes grown by plasma enhanced chemical vapour deposition system

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Avshish; Parveen, Shama; Husain, Samina; Ali, Javid; Zulfequar, Mohammad [Department of Physics, Jamia Millia Islamia (A Central University), New Delhi 110025 (India); Harsh [Centre for Nanoscience and Nanotechnology, Jamia Millia Islamia, New Delhi 110025 (India); Husain, Mushahid, E-mail: mush-reslab@rediffmail.com [Department of Physics, Jamia Millia Islamia (A Central University), New Delhi 110025 (India); Centre for Nanoscience and Nanotechnology, Jamia Millia Islamia, New Delhi 110025 (India)

    2014-02-28

    Field emission properties of single wall carbon nanotubes (SWCNTs) grown on iron catalyst film by plasma enhanced chemical vapour deposition system were studied in diode configuration. The results were analysed in the framework of Fowler-Nordheim theory. The grown SWCNTs were found to be excellent field emitters, having emission current density higher than 20 mA/cm{sup 2} at a turn-on field of 1.3 V/μm. The as grown SWCNTs were further treated with Oxygen (O{sub 2}) plasma for 5 min and again field emission characteristics were measured. The O{sub 2} plasma treated SWCNTs have shown dramatic improvement in their field emission properties with emission current density of 111 mA/cm{sup 2} at a much lower turn on field of 0.8 V/μm. The as grown as well as plasma treated SWCNTs were also characterized by various techniques, such as scanning electron microscopy, high resolution transmission electron microscopy, Raman spectroscopy, and Fourier transform infrared spectroscopy before and after O{sub 2} plasma treatment and the findings are being reported in this paper.

  18. Influence of substrate on structural, morphological and optical properties of ZnO films grown by SILAR method

    Indian Academy of Sciences (India)

    F N Jiménez-García; C L Londoño-Calderón; D G Espinosa-Arbeláez; A Del Real; M E Rodríguez-García

    2014-10-01

    ZnO films were obtained by successive ionic layer adsorption and reaction (SILAR) method from four different substrates: glass microslides, corning glass, quartz and silicon with and without oxide layer. For films deposition, a precursor solution of ZnSO4 was used, complexed with ammonium hydroxide. Prior to the film deposition, wettability of the substrates was analysed using a CCD camera. It was found that the Si without the oxide layer substrate shows hydrophobic behaviour, which makes the films less adherent and not uniform, while in the other substrates, the behaviour was optimal for the growing process. ZnO films grown on glass microslides, corning glass, quartz and Si with oxide layer were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM) and UV–Vis techniques. According to the XRD patterns, the films were polycrystalline, with hexagonal wurtzite structure and the patterns mentioned showed significant differences in crystallite sizes, microstrain and texture coefficient with respect to the employed substrates. The morphology of the ZnO films constituted by rice-like and flower-like structures shows differences in form and size depending on the substrate. The UV–Vis spectroscopy results show that the substrate did not influence the band gap energy value obtained from films.

  19. Electrical properties of scandium nitride epitaxial films grown on (100) magnesium oxide substrates by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Scandium nitride (ScN) films were grown on (100) MgO single crystals by a molecular beam epitaxy method. The effects of growth conditions, including [Sc]/[N] ratio, growth temperature, and nitrogen radical state, on the electrical properties of the ScN films were studied. The ScN films comprised many small columnar grains. Hall coefficient measurements confirmed that the ScN films were highly degenerate n-type semiconductors and that the carrier concentration of the ScN films was sensitive to the growth temperature and the nitrogen radical states during the film growth. The carrier concentrations of the ScN films ranged from 1019–1021 cm−3 while the Hall mobilities ranged from 50–130 cm2·V−1·s−1 for undoped films. The temperature-dependent Hall coefficient measurements showed that the carrier concentration is nearly independent of temperature, indicating that the change in resistivity with temperature is explained by a change in the Hall mobility. The temperature-dependence of the Hall mobility was strongly affected by the growth conditions

  20. Critical thickness and strain relaxation in molecular beam epitaxy-grown SrTiO3 films

    Science.gov (United States)

    Wang, Tianqi; Ganguly, Koustav; Marshall, Patrick; Xu, Peng; Jalan, Bharat

    2013-11-01

    We report on the study of the critical thickness and the strain relaxation in epitaxial SrTiO3 film grown on (La0.3Sr0.7)(Al0.65Ta0.35)O3 (001) (LSAT) substrate using the hybrid molecular beam epitaxy approach. No change in the film's lattice parameter (both the in-plane and the out-of-plane) was observed up to a film thickness of 180 nm, which is in sharp contrast to the theoretical critical thickness of ˜12 nm calculated using the equilibrium theory of strain relaxation. For film thicknesses greater than 180 nm, the out-of-plane lattice parameter was found to decrease hyperbolically in an excellent agreement with the relaxation via forming misfit dislocations. Possible mechanisms are discussed by which the elastic strain energy can be accommodated prior to forming misfit dislocations leading to such anomalously large critical thickness.

  1. Study of optical and structural properties of CZTS thin films grown by co-evaporation and spray pyrolysis

    Science.gov (United States)

    Moreno, R.; Ramirez, E. A.; Gordillo Guzmán, G.

    2016-02-01

    Results regarding optical and structural properties of Cu2ZnSnS4 (CZTS) thin films prepared by co-evaporation using a novel procedure are compared with those obtained with CZTS films grown using a solution based route. The lattice strain ε and crystallite size D of CZTS films prepared by co-evaporation and by spray pyrolysis were estimated through X-ray diffraction (XRD) measurements using Williamson-Hall-isotropic strain model. The results of estimated average crystallite size of CZTS films by Scherrer and Williamson-Hall plot methods were compared with AFM (atomic force microscopy) measurements. It was found that the average crystallite size measured by Williamson-Hall plot methods agree quite well with AFM results. Further, information regarding the influence of preparation method on both, crystalline phases and the formation of structural defects was achieved through Raman and Urbach energy measurements.

  2. Plasmonic enhancement of CO2 conversion to methane using sculptured copper thin films grown directly on TiO2

    International Nuclear Information System (INIS)

    Columnar Cu nanostructures with tunable lengths are formed directly on porous TiO2 by oblique-angle electron beam evaporation and used as a cocatalyst for photocatalytic conversion of CO2 to methane. A remarkable enhancement in methane production rate is measured using the sculptured copper films with a maximum of 124.3 ppm · cm−2 · h−1 for 160 nm long Cu columnar structures under AM 1.5 illumination. This high methane production rate is attributed to a plasmonic enhancement effect due to the columnar Cu nanostructures. - Highlights: • Cu sculptured thin films (STFs) directly grown on TiO2 catalytic films • Excellent performance in methane production rate by TiO2/Cu STFs films • Enhancement in methane production by plasmonic effect of Cu STFs

  3. Band gap energy and bowing parameter of In-rich InAlN films grown by magnetron sputtering

    International Nuclear Information System (INIS)

    The crystal structure, band gap energy and bowing parameter of In-rich InxAl1-xN (0.7 xAl1-xN films were obtained from absorption spectra. Band gap tailing due to compositional fluctuation in the films was observed. The band gap of the as-grown InN measured by optical absorption method is 1.34 eV, which is larger than the reported 0.7 eV for pure InN prepared by molecular beam epitaxy (MBE) method. This could be explained by the Burstein-Moss effect under carrier concentration of 1020 cm-3 of our sputtered films. The bowing parameter of 3.68 eV is obtained for our InxAl1-xN film which is consistent with the previous experimental reports and theoretical calculations.

  4. Low-relaxation spin waves in laser-molecular-beam epitaxy grown nanosized yttrium iron garnet films

    Science.gov (United States)

    Lutsev, L. V.; Korovin, A. M.; Bursian, V. E.; Gastev, S. V.; Fedorov, V. V.; Suturin, S. M.; Sokolov, N. S.

    2016-05-01

    Synthesis of nanosized yttrium iron garnet (Y3Fe5O12, YIG) films followed by the study of ferromagnetic resonance (FMR) and spin wave propagation in these films is reported. The YIG films were grown on gadolinium gallium garnet substrates by laser molecular beam epitaxy. It has been shown that spin waves propagating in YIG deposited at 700 °C have low damping. At the frequency of 3.29 GHz, the spin-wave damping parameter is less than 3.6 × 10-5. Magnetic inhomogeneities of the YIG films give the main contribution to the FMR linewidth. The contribution of the relaxation processes to the FMR linewidth is as low as 1.2%.

  5. Characterization of Al2O3 Thin Films on GaAs Substrate Grown by Atomic Layer Deposition

    Institute of Scientific and Technical Information of China (English)

    LU Hong-Liang; LI Yan-Bo; XU Min; DING Shi-Jin; SUN Liang; ZHANG Wei; WANG Li-Kang

    2006-01-01

    @@ Al2O3 thin films are grown by atomic layer deposition on GaAs substrates at 300℃. The structural properties of the Al2O3 thin film and the Al2O3/GaAs interface are characterized using x-ray diffraction (XRD), highresolution transmission electron microscopy (HRTEM), and x-ray photoelectron spectroscopy (XPS). The XRD results show that the as-deposited Al2O3 film is amorphous. For 30 atomic layer deposition growth cycles, the thicknesses of the Al2O3 thin film and the interface layer from the HRTEM are 3.3nm and 0.5nm, respectively.XPS analyses reveal that the Al2O3/GaAs interface is almost free from As2O3.

  6. Sensing and identification of carbon monoxide using carbon films fabricated by methane arc discharge decomposition technique.

    Science.gov (United States)

    Akbari, Elnaz; Buntat, Zolkafle; Enzevaee, Aria; Yazdi, Mahsa Khoshkhooy; Bahadoran, Mahdi; Nikoukar, Ali

    2014-01-01

    Carbonaceous materials have recently received attention in electronic applications and measurement systems. In this work, we demonstrate the electrical behavior of carbon films fabricated by methane arc discharge decomposition technique. The current-voltage (I-V) characteristics of carbon films are investigated in the presence and absence of gas. The experiment reveals that the current passing through the carbon films increases when the concentration of CO2 gas is increased from 200 to 800 ppm. This phenomenon which is a result of conductance changes can be employed in sensing applications such as gas sensors. PMID:25177219

  7. Luminescence properties of lanthanide and ytterbium lanthanide titanate thin films grown by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Hansen, Per-Anders, E-mail: p.a.hansen@kjemi.uio.no; Fjellvåg, Helmer; Nilsen, Ola [Department of Chemistry, Centre for Materials Science and Nanotechnology, University of Oslo, Sem Sælandsvei 26, 0371 Oslo (Norway); Finstad, Terje G. [Department of Physics, Centre for Materials Science and Nanotechnology, University of Oslo, Sem Sælandsvei 24, 0371 Oslo (Norway)

    2016-01-15

    Lanthanide based luminescent materials are highly suitable as down conversion materials in combination with a UV-absorbing host material. The authors have used TiO{sub 2} as the UV-absorbing host material and investigated the energy transfer between TiO{sub 2} and 11 different lanthanide ions, Ln{sup 3+} (Ln = La, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, Yb) in thin films grown by atomic layer deposition. They have also investigated the possibility to improve the overall energy transfer from TiO{sub 2} to Yb{sup 3+} with a second Ln{sup 3+}, in order to enhance down conversion. The films were grown at a substrate temperature of 300 °C, using the Ln(thd){sub 3}/O{sub 3} (thd = 2,2,6,6-tetramethyl-3,5-heptanedione) and TiCl{sub 4}/H{sub 2}O precursor pairs. The focus of the work is to explore the energy transfer from TiO{sub 2} to Ln{sup 3+} ions, and the energy transfer between Ln{sup 3+} and Yb{sup 3+} ions, which could lead to efficient down conversion. The samples have been characterized by x-ray diffraction, x-ray fluorescence, spectroscopic ellipsometry, and photoluminescence. All films were amorphous as deposited, and the samples have been annealed at 600, 800, and 1000 °C in order to investigate the correlation between the crystallinity and luminescence. The lanthanum titanium oxide samples showed a weak and broad emission centered at 540 nm, which was absent in all the other samples, indicating energy transfer from TiO{sub 2} to Ln{sup 3+} in all other lanthanide samples. In the amorphous phase, all samples, apart from La, Tb, and Tm, showed a typical f-f emission when excited by a 325 nm HeCd laser. None of the samples showed any luminescence after annealing at 1000 °C due to the formation of Ln{sub 2}Ti{sub 2}O{sub 7}. Samples containing Nd, Sm, and Eu show a change in emission spectrum when annealed at 800 °C compared to the as-deposited samples, indicating that the smaller lanthanides crystallize in a different manner than the larger

  8. Orientation and morphology of chloroaluminum phthalocyanine films grown by vapor deposition: Electrical field-induced molecular alignment

    International Nuclear Information System (INIS)

    Graphical abstract: The external electric field applied during the physical vapor deposition process of thin chloroaluminum(III) phthalocyanine films modified noticeably the molecular orientation and the surface morphology of the films. These effects were studied by combining both experimental (polarized Raman spectroscopy and atomic force microscopy) and theoretical (quantum chemical calculations) techniques. Research highlights: → The electric field was applied during the PVD of thin AlClPc films. → The electric field of 1.4 kV mm-1 modified the film structure noticeably. → Tilt angles of the molecules were measured using polarised Raman spectroscopy. → Assignments in vibrational spectra were performed using DFT computations. - Abstract: The electric field influence on the molecular orientation and the surface morphology of the chloroaluminum(III) phthalocyanine (AlClPc) films has been studied using polarization dependent Raman spectroscopy and atomic force microscopy. The experimental studies were supported by DFT quantum chemical computations of the AlClPc vibrational spectra and 15N isotopic shifts. The electric field of 1.4 kV mm-1 applied parallel to the substrate plane during the physical vapour deposition modified the film structure noticeable. The AlClPc molecules were aligned nearly perpendicular to the substrate surface (the mean tilt angle increased to ∼80 deg. from ∼20 deg. in the films grown without the electric field). The AFM images of the AlClPc films grown in the absence of electric field revealed a predominant amount of crystallites of polyhedron shape, whereas in the case of the applied electric field the surface was more ordered and consisted of the crystallites of a smoother shape.

  9. Orientation and morphology of chloroaluminum phthalocyanine films grown by vapor deposition: Electrical field-induced molecular alignment

    Energy Technology Data Exchange (ETDEWEB)

    Basova, Tamara V., E-mail: basova@niic.nsc.ru [Nikolaev Institute of Inorganic Chemistry, 3 Lavrentiev Ave., Novosibirsk 630090 (Russian Federation); Kiselev, Vitaly G., E-mail: vitaly.kiselev@kinetics.nsc.ru [Institute of Chemical Kinetics and Combustion, 3 Institutskaya Str., Novosibirsk 630090 (Russian Federation); Novosibirsk State University, 2 Pirogova Str., Novosibirsk 630090 (Russian Federation); Plyashkevich, Vladimir A. [Nikolaev Institute of Inorganic Chemistry, 3 Lavrentiev Ave., Novosibirsk 630090 (Russian Federation); Cheblakov, Pavel B. [Institute of Chemical Kinetics and Combustion, 3 Institutskaya Str., Novosibirsk 630090 (Russian Federation); Novosibirsk State University, 2 Pirogova Str., Novosibirsk 630090 (Russian Federation); Latteyer, Florian; Peisert, Heiko; Chasse, Thomas [Institute of Physical and Theoretical Chemistry, University of Tuebingen, D-72074 Tubingen (Germany)

    2011-02-28

    Graphical abstract: The external electric field applied during the physical vapor deposition process of thin chloroaluminum(III) phthalocyanine films modified noticeably the molecular orientation and the surface morphology of the films. These effects were studied by combining both experimental (polarized Raman spectroscopy and atomic force microscopy) and theoretical (quantum chemical calculations) techniques. Research highlights: {yields} The electric field was applied during the PVD of thin AlClPc films. {yields} The electric field of 1.4 kV mm{sup -1} modified the film structure noticeably. {yields} Tilt angles of the molecules were measured using polarised Raman spectroscopy. {yields} Assignments in vibrational spectra were performed using DFT computations. - Abstract: The electric field influence on the molecular orientation and the surface morphology of the chloroaluminum(III) phthalocyanine (AlClPc) films has been studied using polarization dependent Raman spectroscopy and atomic force microscopy. The experimental studies were supported by DFT quantum chemical computations of the AlClPc vibrational spectra and {sup 15}N isotopic shifts. The electric field of 1.4 kV mm{sup -1} applied parallel to the substrate plane during the physical vapour deposition modified the film structure noticeable. The AlClPc molecules were aligned nearly perpendicular to the substrate surface (the mean tilt angle increased to {approx}80 deg. from {approx}20 deg. in the films grown without the electric field). The AFM images of the AlClPc films grown in the absence of electric field revealed a predominant amount of crystallites of polyhedron shape, whereas in the case of the applied electric field the surface was more ordered and consisted of the crystallites of a smoother shape.

  10. Microstructures and growth mechanisms of GaN films epitaxially grown on AlN/Si hetero-structures by pulsed laser deposition at different temperatures

    OpenAIRE

    Wenliang Wang; Weijia Yang; Yunhao Lin; Shizhong Zhou; Guoqiang Li

    2015-01-01

    2 inch-diameter GaN films with homogeneous thickness distribution have been grown on AlN/Si(111) hetero-structures by pulsed laser deposition (PLD) with laser rastering technique. The surface morphology, crystalline quality, and interfacial property of as-grown GaN films are characterized in detail. By optimizing the laser rastering program, the ~300 nm-thick GaN films grown at 750 °C show a root-mean-square (RMS) thickness inhomogeneity of 3.0%, very smooth surface with a RMS surface roughne...

  11. Deposition temperature dependence of the deep defect density for a-Si:H films grown by electron cyclotron resonance microwave plasma

    Science.gov (United States)

    Essick, J. M.; Pool, F. S.; Shing, Y. H.

    1992-01-01

    The dependence on deposition temperature of the mobility gap density of states has been determined for hydrogenated amorphous silicon (a-Si:H) films grown by electron cyclotron resonance (ECR) microwave plasma CVD. A minimum in the integrated deep defect density of 1 x 10 exp 16/cu cm was found to occur at a temperature of approximately 250 C, while an Urbach slope minimum of 52 meV was observed at 175 C under our deposition conditions. Based on these measurements the ECR-grown films were found to be of excellent device quality and comparable to a-Si:H films grown by RF plasma-enhanced CVD.

  12. Effect of substrate temperature on the texture of MgO films grown by ion beam assisted deposition

    International Nuclear Information System (INIS)

    In this paper, the role of substrate temperature in the crystalline texture of MgO films grown by ion beam assisted deposition (IBAD) is investigated. This study reveals that the best in-plane alignment for MgO films grown on Y2O3/Si is obtained at ∼25 deg. C. At this temperature, MgO films with an in-plane orientation distribution as low as 3.70 full width at half maximum (FWHM) have been attained. MgO films deposited at temperatures higher than 100 deg. C have broad in-plane alignment. Although the deposition at the lowest temperature (-150 deg. C) did not improve the in-plane texture, the acceptable deviation from the optimum ion to molecule ratio for achieving biaxially textured films was the largest. As a trend, the acceptable ion to molecule deviation decreases with increasing substrate temperature. This study is especially important for continuous IBAD MgO depositions where less restrictive conditions are desired

  13. Effect of substrate temperature on the texture of MgO films grown by ion beam assisted deposition

    Energy Technology Data Exchange (ETDEWEB)

    Stan, Liliana; Arendt, Paul N; DePaula, Raymond F; Usov, Igor O; Groves, James R [Superconductivity Technology Center, Los Alamos National Laboratory, Los Alamos, NM 87545 (United States)

    2006-04-15

    In this paper, the role of substrate temperature in the crystalline texture of MgO films grown by ion beam assisted deposition (IBAD) is investigated. This study reveals that the best in-plane alignment for MgO films grown on Y{sub 2}O{sub 3}/Si is obtained at {approx}25 deg. C. At this temperature, MgO films with an in-plane orientation distribution as low as 3.7{sup 0} full width at half maximum (FWHM) have been attained. MgO films deposited at temperatures higher than 100 deg. C have broad in-plane alignment. Although the deposition at the lowest temperature (-150 deg. C) did not improve the in-plane texture, the acceptable deviation from the optimum ion to molecule ratio for achieving biaxially textured films was the largest. As a trend, the acceptable ion to molecule deviation decreases with increasing substrate temperature. This study is especially important for continuous IBAD MgO depositions where less restrictive conditions are desired.

  14. Thermally grown oxide films and corrosion performance of ferritic stainless steels under simulated exhaust gas condensate conditions

    International Nuclear Information System (INIS)

    Highlights: • Five ferritic stainless steels with dissimilar composition included. • Thermal oxide films and performance under exhaust gas condensate conditions studied. • Oxide films grown at 300 and 600 °C show differences in structure and properties. • Performance of alloys with >11.5 wt.% Cr is related to elements Ti, Si, Nb and Mo. • Compositional optimization requires knowledge on several linked processes. - Abstract: Five ferritic stainless steels are characterized in terms of thermally grown oxide films and corrosion performance under simulated exhaust gas condensate conditions. Oxide films developed at 300 °C show only little variation in microstructure and properties between the alloys, whereas those evolved at 600 °C exhibit clear differences. Especially in alloys with >11.5 wt.% chromium, the presence and distribution of such alloying elements as titanium, silicon, niobium and molybdenum are crucial for the film properties and the overall corrosion performance. The results may be exploited in the compositional optimization of the alloys for the cold-end components of automotive exhaust system

  15. Conductive porous carbon film as a lithium metal storage medium

    International Nuclear Information System (INIS)

    Highlights: • Conductive porous carbon films were prepared by distributing amorphous carbon nanoparticles. • The porous film provides enough conductive surfaces and reduces the effective current density. • By using the film, dendritic Li growth can be effectively prevented. • The use of the porous framework can be extended for use in other 3D structured materials for efficient Li metal storage. - Abstract: The Li metal anode boasts attractive electrochemical characteristics for use in rechargeable Li batteries, such as a high theoretical capacity and a low redox potential. However, poor cycle efficiency and safety problems relating to dendritic Li growth during cycling should be addressed. Here we propose a strategy to increase the coulombic efficiency of the Li metal electrode. Conductive porous carbon films (CPCFs) were prepared by distributing amorphous carbon nanoparticles within a polymer binder. This porous structure is able to provide enough conductive surfaces for Li deposition and dissolution, which reduce the effective current density. Moreover, the pores in these films enable the electrolyte to easily penetrate into the empty space, and Li can be densely deposited between the carbon particles. As a result, dendritic Li growth can be effectively prevented. Electrochemical tests demonstrate that the coulombic efficiency of the porous electrode can be greatly improved compared to that of the pure Cu electrode. By allowing for the development of robust Li metal electrodes, this approach provides key insight into the design of high-capacity anodes for Li metal batteries, such as Li-air and Li-S systems

  16. Microstructure and polarity of epitaxial ZnO films grown on LSAT(111) substrate studied by transmission electron microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Liu Yuzi [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 (China)]. E-mail: yzliu@blem.ac.cn; Ying, M.J. [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 (China); Du, X.L. [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 (China)]. E-mail: xldu@aphy.iphy.ac.cn; Zeng, Z.Q. [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 (China); Mei, Z.X. [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 (China); Jia, J.F. [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 (China); Xue, Q.K. [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 (China); Zhang, Z. [Beijing University of Technology, 100 Pingle Yuan, Chao Yang District, Beijing 100022 (China)

    2005-05-30

    Transmission electron microscopy is used to investigate the structural characteristics of epitaxial ZnO thin films grown on (LaAlO{sub 3}){sub 0.3}(Sr{sub 0.5}Ta{sub 0.5}O{sub 3}){sub 0.7}(111) (LSAT) by rf plasma-assisted molecular beam epitaxy. It is found that the growth temperature plays a key role in the formation of microstructures in ZnO film. Growth temperature dependence of rotation domain, interface and dislocation structures is studied, and the mechanism for polarity selection is discussed.

  17. Surface structure determinations of crystalline ionic thin films grown on transition metal single crystal surfaces by low energy electron diffraction

    Energy Technology Data Exchange (ETDEWEB)

    Roberts, J.G.

    2000-05-01

    The surface structures of NaCl(100), LiF(100) and alpha-MgCl2(0001) adsorbed on various metal single crystals have been determined by low energy electron diffraction (LEED). Thin films of these salts were grown on metal substrates by exposing the heated metal surface to a molecular flux of salt emitted from a Knudsen cell. This method of investigating thin films of insulators (ionic salts) on a conducting substrate (metal) circumvents surface charging problems that plagued bulk studies, thereby allowing the use of electron-based techniques to characterize the surface.

  18. Room temperature weak ferromagnetism in Sn1-xMnxSe2 2D films grown by molecular beam epitaxy

    Science.gov (United States)

    Dong, Sining; Liu, Xinyu; Li, Xiang; Kanzyuba, Vasily; Yoo, Taehee; Rouvimov, Sergei; Vishwanath, Suresh; Xing, Huili G.; Jena, Debdeep; Dobrowolska, Margaret; Furdyna, Jacek K.

    2016-03-01

    We discuss growth and magnetic properties of high-quality two dimensional (2D) Sn1-xMnxSe2 films. Thin films of this 2D ternary alloy with a wide range of Mn concentrations were successfully grown by molecular beam epitaxy. Mn concentrations up to x ≈ 0.60 were achieved without destroying the crystal structure of the parent SnSe2 2D system. Most important, the specimens show clear weak ferromagnetic behavior above room temperature, which should be of interest for 2D spintronic applications.

  19. Microstructure and strain in thin ferroelectric BaTiO3 films epitaxially grown on MgO substrates

    International Nuclear Information System (INIS)

    High-resolution x-ray diffraction and high-resolution scanning electron microscopy have been applied to characterize BaTiO3 films of different thicknesses, metal-organic chemical vapour deposition grown on MgO substrates. We found a strong correlation between the strain state of the films and the amount of specific material discontinuities, the latter serving as an effective channel of strain relaxation. The results obtained are explained by considering the structural misfit arising at the interface between in-plane oriented 90 deg. domains

  20. Electrical and Optical Studies of Defect Structure of HgCdTe Films Grown by Molecular Beam Epitaxy

    Science.gov (United States)

    Świątek, Z.; Ozga, P.; Izhnin, I. I.; Fitsych, E. I.; Voitsekhovskii, A. V.; Korotaev, A. G.; Mynbaev, K. D.; Varavin, V. S.; Dvoretsky, S. A.; Mikhailov, N. N.; Yakushev, M. V.; Bonchyk, A. Yu.; Savytsky, H. V.

    2016-07-01

    Electrical and optical studies of defect structure of HgCdTe films grown by molecular beam epitaxy (MBE) are performed. It is shown that the peculiarity of these films is the presence of neutral defects formed at the growth stage and inherent to the material grown by MBE. It is assumed that these neutral defects are the Te nanocomplexes. Under ion milling, they are activated by mercury interstitials and form the donor centers with the concentration of 1017 cm-3, which makes it possible to detect such defects by measurements of electrical parameters of the material. Under doping of HgCdTe with arsenic using high temperature cracking, the As2 dimers are present in the arsenic flow and block the neutral Te nanocomplexes to form donor As2Te3 complexes. The results of electrical studies are compared with the results of studies carried out by micro-Raman spectroscopy.

  1. Analysis of copper (I) oxide thin films grown in a photo-assisted chemical vapor deposition reactor for photovoltaic applications

    Science.gov (United States)

    Mohiuddin, Omar H.

    Copper (I) oxide (Cu2O) has enormous potenetial for photovoltaic applications. Cu2O is a p-type semiconductor with a direct band gap of 2.2 eV. When grown on silicon, thin film Cu2O has the potential to increase photovoltaic eciency. Cu2O is a suitable photovoltaic material because it is inexpensive, non-toxic and abundant in the earth's crust. A model was developed based on a stagnation flow reactor with a reduction in activation energy for the precursor decomposition due to the light irradiation to model the light irradiation. The parameters that were tested were substrate temperature (200 to 700° C), gas temperature (100 and 150 °C) and carrier gas flow rate (25 to 100 sccm). The model was tested with a 480 nm and 172 nm light irradiation source and without any light irradiation source. This thesis utilizes a photo assisted chemical vapor deposition reactor to deposit films of Cu2O on silicon. The films were grown with a surface temperature of 700 °C, a gas temperature of 150 °C and an oxygen gas flow rate of 100 sccm. One deposition was done without the use of any light irradiation and another deposition was done with a 480 nm light irradiation source. X-ray diffraction, ellipsometry and transmission electron microscopy (TEM) were used to investigate the light irradiation eect on the lm growth and morphology. When grown with light irradiation, the ellipsometer showed that the film thickness increased to 98 +/- 6 nm from 74 +/- 10 nm, which shows that there is greater uniformity with a higher thickness when grown with light irradiation. The XRD results showed an increase in crystallinity in Cu2O grown with light irradiation, and the TEM results showed the grain sizes double when grown with light irradiation. The UV irradiation has been shown to increase the copper (I) oxide film quality and lm thickness. The model showed that the effect of the light irradiation was maximized at a surface temperature of 400 °C After this temperature the thermal eects become

  2. Preparation and evaluation of medicinal carbon oral films.

    Science.gov (United States)

    Sakuda, Yoko; Ito, Akihiko; Sasatsu, Masanaho; Machida, Yoshiharu

    2010-04-01

    Medicinal carbon (MC) films, which can be taken more easily than other dosage forms, were prepared using sodium carboxymethyl cellulose (CMC), hydroxypropylmethyl cellulose (HPMC) and alginic acid sodium (ALG) as film base materials. Brilliant blue FCF (BB) was used as a model drug. The films containing MC had sufficient strength and disintegration time, but their ability to adsorb BB was clearly inhibited compared to that of MC in powder form. When ALG was used as the film base, the BB adsorption capacity of MC film was approximately 50% of that of MC powder. In an attempt to improve this adsorption ability, two saccharides, sorbitol (SOR) and maltitol (MT), were separately added to MC at a mixing ratio of 1 : 1 by weight. When ALG was the film base, MC films containing SOR or MT showed rapid adsorption profiles and had greatly increased capacities for BB adsorption compared with films containing MC alone. SOR was superior to MT as an additive, though both gave MC-containing films a BB adsorption capacity almost equal to that of MC powder after 24 h, and physical mixtures tended to have better BB adsorption capacities than pre-treatment mixture. In addition, both SOR and MT tended to increase vertical strength of films, but neither additive in either type of mixture had a clear effect on disintegration time. When CMC or HPMC was used as the film base, on the other hand, the addition of SOR or MT caused hardly any improvement in adsorption ability. The above results demonstrate that ALG is useful as a film base material for the preparation of MC films, and that MC films with sufficient strength and adsorption capacities equal to those of MC powders can be produced using a physical mixture of MC and SOR on an ALG base. PMID:20410622

  3. Co2FeAl Heusler thin films grown on Si and MgO substrates: Annealing temperature effect

    Science.gov (United States)

    Belmeguenai, M.; Tuzcuoglu, H.; Gabor, M. S.; Petrisor, T.; Tiusan, C.; Zighem, F.; Chérif, S. M.; Moch, P.

    2014-01-01

    10 nm and 50 nm Co2FeAl (CFA) thin films have been deposited on MgO(001) and Si(001) substrates by magnetron sputtering and annealed at different temperatures. X-rays diffraction revealed polycrystalline or epitaxial growth (according to CFA(001)[110]//MgO(001)[100] epitaxial relation) for CFA films grown on a Si and on a MgO substrate, respectively. For these later, the chemical order varies from the A2 phase to the B2 phase when increasing the annealing temperature (Ta), while only the A2 disorder type has been observed for CFA grown on Si. Microstrip ferromagnetic resonance (MS-FMR) measurements revealed that the in-plane anisotropy results from the superposition of a uniaxial and a fourfold symmetry term for CFA grown on MgO substrates. This fourfold anisotropy, which disappears completely for samples grown on Si, is in accord with the crystal structure of the samples. The fourfold anisotropy field decreases when increasing Ta, while the uniaxial anisotropy field is nearly unaffected by Ta within the investigated range. The MS-FMR data also allow for concluding that the gyromagnetic factor remains constant and that the exchange stiffness constant increases with Ta. Finally, the FMR linewidth decreases when increasing Ta, due to the enhancement of the chemical order. We derive a very low intrinsic damping parameter (1.1×10-3 and 1.3×10-3 for films of 50 nm thickness annealed at 615 °C grown on MgO and on Si, respectively).

  4. Co2FeAl Heusler thin films grown on Si and MgO substrates: Annealing temperature effect

    International Nuclear Information System (INIS)

    10 nm and 50 nm Co2FeAl (CFA) thin films have been deposited on MgO(001) and Si(001) substrates by magnetron sputtering and annealed at different temperatures. X-rays diffraction revealed polycrystalline or epitaxial growth (according to CFA(001)[110]//MgO(001)[100] epitaxial relation) for CFA films grown on a Si and on a MgO substrate, respectively. For these later, the chemical order varies from the A2 phase to the B2 phase when increasing the annealing temperature (Ta), while only the A2 disorder type has been observed for CFA grown on Si. Microstrip ferromagnetic resonance (MS-FMR) measurements revealed that the in-plane anisotropy results from the superposition of a uniaxial and a fourfold symmetry term for CFA grown on MgO substrates. This fourfold anisotropy, which disappears completely for samples grown on Si, is in accord with the crystal structure of the samples. The fourfold anisotropy field decreases when increasing Ta, while the uniaxial anisotropy field is nearly unaffected by Ta within the investigated range. The MS-FMR data also allow for concluding that the gyromagnetic factor remains constant and that the exchange stiffness constant increases with Ta. Finally, the FMR linewidth decreases when increasing Ta, due to the enhancement of the chemical order. We derive a very low intrinsic damping parameter (1.1×10−3 and 1.3×10−3 for films of 50 nm thickness annealed at 615 °C grown on MgO and on Si, respectively)

  5. Dislocation Behavior in AlGaN/GaN Multiple Quantum-Well Films Grown with Different Interlayers

    International Nuclear Information System (INIS)

    Dislocation behaviors are analyzed in AlGaN/GaN multiple-quantum-well films grown with different strain-modified interlayers. In the case of multiple-quantum-well layers grown on a GaN buffer layer without the interlayer, many threading dislocations interact and annihilate within about 100 nm below the multiple quantum well layer. For multiple-quantum-well layers grown with the AlGaN interlayer, misfit dislocations between the GaN buffer layer and the AlGaN interlayer enter multiple-quantum-well layers and result in an increase of threading dislocation density. Besides misfit dislocations, the edge-type dislocation is another dislocation origin attributed to the dissociation of Shockley partials bounding the stacking fault in AlN/GaN superlattices below the interlayer interface

  6. Dual ion beam deposition of carbon films with diamondlike properties

    Science.gov (United States)

    Mirtich, M. J.; Swec, D. M.; Angus, J. C.

    1984-01-01

    A single and dual ion beam system was used to generate amorphous carbon films with diamond like properties. A methane/argon mixture at a molar ratio of 0.28 was ionized in the low pressure discharge chamber of a 30-cm-diameter ion source. A second ion source, 8 cm in diameter was used to direct a beam of 600 eV Argon ions on the substrates (fused silica or silicon) while the deposition from the 30-cm ion source was taking place. Nuclear reaction and combustion analysis indicate H/C ratios for the films to be 1.00. This high value of H/C, it is felt, allowed the films to have good transmittance. The films were impervious to reagents which dissolve graphitic and polymeric carbon structures. Although the measured density of the films was approximately 1.8 gm/cu cm, a value lower than diamond, the films exhibited other properties that were relatively close to diamond. These films were compared with diamondlike films generated by sputtering a graphite target.

  7. Effect of Drought Stress on Photosynthesis and Leaf Gas Exchange of Rice Grown in Nutrient Film Technique (NFT)

    OpenAIRE

    K. P. Halder; S. W Burrage

    2004-01-01

    Rice plants grown in nutrient film technique (NFT) to evaluate the effect of intermittent water stress on net photosynthesis rate and leaf gas exchange. Stomatal conductance, net photosynthesis rate and mesophyll conductance decreased with increasing water stress. Internal CO2 concentration was not affected by water stress. A weak relationship (R2= 0.60) between net photosynthesis rate and stomatal conductance suggested that non-stomatal limitations to photosynthesis

  8. Nanostructured Pt–CeO2 thin film catalyst grown on graphite foil by magnetron sputtering

    International Nuclear Information System (INIS)

    Layers of different thickness of CeO2 doped by Pt were prepared by magnetron sputtering on different substrates: Si (1 0 0) and a graphite foil. The structure and chemical composition of the Pt–CeO2 catalysts have been investigated by scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS) and hard X-ray photoelectron spectroscopy (HAXPES). SEM showed that the layers prepared on different substrates had very different morphology. XPS and HAXPES studies demonstrated that Pt was dispersed only in Pt2+ and Pt4+ oxidation states in CeO2. Intensity of Pt2+- and Pt4+-peaks was affected by the plasma substrate interaction effects showing that carbon substrate played an active role by determining the film structure. The Pt2+/Pt4+ and Ce3+/Ce4+ ratios depend on the layer thickness and increases in the case of the graphite substrate. The reduced character of porous layer was explained by a general effect of formation of defects and oxygen vacancies at oxide edges and steps, and oxygen reaction with carbon which is responsible of formation of oxygen deficient cerium oxide at the interface.

  9. Characterization of titanium thin films anodically grown in phosphoric acid; Caracterisation des films d'oxyde de titane obtenus anodiquement dans l'acide phosphorique

    Energy Technology Data Exchange (ETDEWEB)

    Khadiri, M.E.; Benyaich [Faculte des Sciences Semlalia, Lab. d' Electrochimie et Chimie Analytique, Marakech (Morocco); Oueriagli, A.; Outzourhit, A.; Ameziane, E.L. [Faculte des Sciences Semlalia, Lab. de Physique du Solide et des Couches Minces, Marakech (Morocco)

    2004-08-01

    Ti-Cu(2%) alloy was anodized in a 5 M phosphoric acid solution under various voltages ranging from 10 to 35 V. The composition, the structural and optical properties of the as-grown oxide films were studied. It was found that the color of the anodized substrates varied from yellow to blue depending on the anodizing voltage. The films formed on the alloy are amorphous and the oxidation state of Ti on their surface is mainly +4. On the other hand it was found that the thickness of the films increases linearly with anodization voltage at rate of 1.94 nm/V, while the refractive index at the wavelength corresponding to the reflectance minimum was practically constant. These films were also found to have excellent protective properties for the examined alloy. (authors)

  10. Immune response and disease resistance of shrimp fed biofloc grown on different carbon sources.

    Science.gov (United States)

    Ekasari, Julie; Hanif Azhar, Muhammad; Surawidjaja, Enang H; Nuryati, Sri; De Schryver, Peter; Bossier, Peter

    2014-12-01

    The objective of this study was to document the immunological effects of growing shrimp in biofloc systems. The experiment consisted of four types of biofloc systems in which bioflocs were produced by daily supplementation of four different carbon sources, i.e. molasses, tapioca, tapioca-by-product, and rice bran, at an estimated C/N ratio of 15 and a control system without any organic carbon addition. Each biofloc system was stocked with Pacific white shrimp (Litopenaeus vannamei) juveniles that were reared for 49 days. The use of tapioca-by-product resulted in a higher survival (93%) of the shrimp as compared to the other carbon sources and the control. The highest yield and protein assimilation was observed when tapioca was used as the carbon source. After 49 days, phenoloxidase (PO) activity of the shrimp grown in all biofloc systems was higher than that of the shrimp from the control system. Following a challenge test by injection with infectious myonecrosis virus (IMNV), the levels of PO and respiratory burst (RB) activity in the shrimp of all biofloc treatments were higher than that of the challenged shrimp from the control treatment. An increased immunity was also suggested by the survival of the challenged shrimp from the experimental biofloc groups that was significantly higher as compared to the challenged shrimp from the control treatment, regardless of the organic carbon source used to grow the bioflocs. Overall, this study demonstrated that the application of biofloc technology may contribute to the robustness of cultured shrimp by immunostimulation and that this effect is independent of the type of carbon source used to grow the flocs. PMID:25218685

  11. Deposition of calcium carbonate films by a polymer-induced liquid-precursor (PILP) process

    Science.gov (United States)

    Gower, Laurie B.; Odom, Damian J.

    2000-03-01

    A polypeptide additive has been used to transform the solution crystallization of calcium carbonate to a solidification process of a liquid-phase mineral precursor. In situ observations reveal that polyaspartate induces liquid-liquid phase separation of droplets of a mineral precursor. The droplets deposit on the substrate and coalesce to form a coating, which then solidifies into calcitic tablets and films. Transition bars form during the amorphous to crystalline transition, leading to sectorization of calcite tablets, and the defect textures and crystal morphologies are atypical of solution grown crystals. The formation of nonequilibrium crystal morphologies using an acidic polypeptide may have implications in the field of biomineralization, and the environmentally friendly aspects of this polymer-induced liquid-precursor (PILP) process may offer new techniques for aqueous-based processing of ceramic films, coatings, and particulates.

  12. Nanomechanical characterization of amorphous hydrogenated carbon thin films

    International Nuclear Information System (INIS)

    Amorphous hydrogenated carbon (a-C:H) thin films deposited on a silicon substrate under various mixtures of methane-hydrogen gas by electron cyclotron resonance microwave plasma chemical vapor deposition (ECR-MPCVD) was investigated. Microstructure, surface morphology and mechanical characterizations of the a-C:H films were analyzed using Raman spectroscopy, atomic force microscopy (AFM) and nanoindentation technique, respectively. The results indicated there was an increase of the hydrogen content, the ratio of the D-peak to the G-peak (I D/I G) increased but the surface roughness of the films was reduced. Both hardness and Young's modulus increased as the hydrogen content was increased. In addition, the contact stress-strain analysis is reported. The results confirmed that the mechanical properties of the amorphous hydrogenated carbon thin films improved using a higher H2 content in the source gas

  13. Angle-resolved photoemission spectroscopy for VO2 thin films grown on TiO2 (0 0 1) substrates

    International Nuclear Information System (INIS)

    We present the results of angle-resolved photoemission spectroscopy (ARPES) measurements of metallic VO2 thin films. The VO2 thin films have been grown on TiO2 (0 0 1) single crystal substrates using pulsed laser deposition. The films exhibit a first-order metal-insulator transition (MIT) at 305 K. In the ARPES spectra of the metallic phase for the films, the O 2p band shows highly dispersive feature in the binding energy range of 3-8 eV along the Γ-Z direction. The periodicity of the dispersive band is found to be 2.2 A-1 which is almost identical with the periodicity expected from the c-axis length of the VO2 thin films. The overall feature of the experimental band structure is similar to the band structure calculations, supporting that we have succeeded in observing the dispersive band of the O 2p state in the metallic VO2 thin film. The present work indicates that the ARPES measurements using epitaxial thin films are promising for determining the band structure of VO2.

  14. Quantification of oxygen and carbon in high Tc superconducting films by (α,α) elastic resonance technique

    International Nuclear Information System (INIS)

    The quantification of oxygen and carbon in high-temperature (Tc) superconducting oxide thin films was made by employing elastic resonance in He backscattering analysis. A method combining the oxygen resonance technique and channeling was presented for measuring the nature of the oxygen disorder near the surface and the interface in a YBCO superconducting film grown on an MgO substrate. The oxygen resonance technique was used to quantify the oxygen profiling in the metal/YBCO contacts, showing that Zr and Nb act as sinks to oxygen from YBCO films and are oxidized in the forms Zr/ZrO2/YBCO/MgO and Nb0.2O/YBCO/MgO after annealing in a vacuum at 350oC. We combined the carbon and oxygen resonances to determine the carbon contamination and oxygen concentration changes on the YBCO surface after coating and baking the photoresist. Residual carbon on the surface and a thin layer of oxygen depletion near the YBCO surface have been observed. The residual carbon in Bi2Sr2CaCu2O8 films made by the decomposition of metallo-organic precursors was quantified using carbon resonance. (author)

  15. The influence of radio frequency power on the characteristics of carbon-rich hydrogenated amorphous silicon carbide films

    International Nuclear Information System (INIS)

    A series of carbon-rich hydrogenated amorphous silicon carbide (a-Si1-xCx:H) films were prepared at different radio frequency (RF) powers from silane-ethylene-hydrogen plasma. The effect of the RF power on the bonding configurations and microstructures has been investigated. The grown films were characterized by a collection of techniques including Scanning Electron Microscope, Fourier transform infrared(FTIR) spectroscopy, Raman scattering and photoluminescence spectroscopy. The deposition rate increases upon RF power due to the enhancement of chemical reactivity of plasma. The carbon to silicon ratio increases, for more C2H4 molecules decompose with the enhancement of RF power and more carbon atoms are bonded into the films. Raman G peak position shifts to a higher wavenumber, which indicates that the size and concentration of sp2 carbon clusters increase as the RF power becomes stronger. Blue-green photoluminescence is detected at room temperature. The PL band can be attributed to the existence of the amorphous carbon clusters in films with high carbon concentrations.

  16. Super H2O-barrier film using Cat-CVD (HWCVD)-grown SiCN for film-based electronics

    International Nuclear Information System (INIS)

    'Super H2O-barrier film' with a water vapor transmission rate (WVTR) less than 1 mg/m2/day has been developed. The barrier layer is a single layer of amorphous SiCN grown by organic Cat-CVD (O-Cat-CVD) with a thickness of 100 nm. SiCN has been grown by using a gas mixture of monomethylsilane (MMS; Si (CH3)H3), NH3 and H2 on polyethylene-naphthalate (PEN) film substrates. It has been found that the WVTR drastically depends on the W-filament temperature of O-Cat-CVD. The WVTR changed from 5 x 10-1 to 1 x 10-3, corresponding to the W-filament temperature increase from 1100 to 1200 C. We have recently succeeded in developing the 'super H2O-barrier film' by the coating of single layers of SiCN for both sides of the PEN film without using the widely used polymer/inorganic multilayer coating. The both-side coating has been found to be crucial to avoid the H2O penetration into PEN films and also to avoid the breakdown of the SiCN/PEN interface caused by the H2O accumulation at the interface.

  17. Terahertz Science and Technology of Macroscopically Aligned Carbon Nanotube Films

    Science.gov (United States)

    Kono, Junichiro

    One of the outstanding challenges in nanotechnology is how to assemble individual nano-objects into macroscopic architectures while preserving their extraordinary properties. For example, the one-dimensional character of electrons in individual carbon nanotubes leads to extremely anisotropic transport, optical, and magnetic phenomena, but their macroscopic manifestations have been limited. Here, we describe methods for preparing macroscopic films, sheets, and fibers of highly aligned carbon nanotubes and their applications to basic and applied terahertz studies. Sufficiently thick films act as ideal terahertz polarizers, and appropriately doped films operate as polarization-sensitive, flexible, powerless, and ultra-broadband detectors. Together with recently developed chirality enrichment methods, these developments will ultimately allow us to study dynamic conductivities of interacting one-dimensional electrons in macroscopic single crystals of single-chirality single-wall carbon nanotubes.

  18. Computational and experimental studies of strain sensitive carbon nanotube films

    OpenAIRE

    Bu, Lei

    2014-01-01

    The excellent electrical and mechanical properties of carbon nanotubes (CNTs) provide interesting opportunities to realize new types of strain gauges. However, there are still challenges for the further development of CNT film strain gauges, for instance the lack of design rules, the homogeneity, stability and reproducibility of CNT films. This thesis aims to address these issues from two sides: simulation and experiment. Monte Carlo simulations show that both the sheet resistance and gauge f...

  19. Reaction of coadsorbed NO and CO on fcc ultra-thin Fe films grown on a Rh(100) surface

    Science.gov (United States)

    Egawa, C.; Katayama, S.; Oki, S.

    1997-11-01

    We have studied the reaction of coadsorbed NO and CO on ultra-thin Fe films (1-3 ML, ML = monolayer) grown on Rh(100) surface in order to examine the reactivity of Fe thin-films having fcc structure. TD spectra obtained from NO adsorbed Fe thin-films gave an evolution of N 2 below 300 K concomitant with a desorption of NO at 350 K and a recombinative desorption of atomic nitrogen above 800 K. The peak temperature of the recombinative desorption shifted from 800 K to 1000 K with increasing Fe coverage from 1 to 3 ML. Similarly, the desorption temperature of dissociatively adsorbed CO moved from 700 K to 900 K upon the increase in film thickness. These are correlated with a growth of the electronic density of states just below the Fermi level observed for these Fe thin-films. The coverage of dissociatively adsorbed CO is always less than 0.05 on 1 and 3 ML films, which is only one-fourth of that reported on bcc Fe(100) surface. It indicates that the dissociation of CO does not effectively proceed on fcc Fe thin-films. TPR spectra of NO and CO coadsorbed Fe thin-films show the dependence of position and shape of product peaks on the film thickness. In particular, TPR spectra from Fe thin-films with nearly equal amounts of coadsorbed NO and CO display a sharp desorption of CO and CO 2 above 500 K followed by a broad evolution of CO 2 and N 2. The increase of Fe coverage induced the higher temperature shift and intensity growth of this sharp desorption. XPS and UPS spectra show that this is derived from molecularly adsorbed CO coexisting with dissociated N and O atoms. These results strongly suggest an attractive interaction between a pair of CO molecule and N atom in a mixed phase through surface Fe layer or a formation of surface complex like NCO species.

  20. Methods of Boron-carbon Deposited Film Removal

    Science.gov (United States)

    Airapetov, A.; Terentiev, V.; Voituk, A.; Zakharov, A.

    Boron carbide was proposed as a material for in-situ renewable protecting coating for tungsten tiles of the ITER divertor. It is necessary to develop a method of gasification of boron-carbon film which deposits during B4C sputtering. In this paper the results of the first stage investigation of gasification methods of boron-carbon films are presented. Two gasification methods of films are investigated: interaction with the ozone-oxygen mixture and irradiation in plasma with the working gas composed of oxygen, ethanol, and, in some cases, helium. The gasification rate in the ozone-oxygen mixture at 250 °C for B/C films with different B/C ratio and carbon fiber composite (CFC), was measured. For B/C films the gasification rate decreased with increasing B/C ratio (from 45 nm/h at B/C=0.7 to 4 nm/h at B/C=2.1; for CFC - 15 μm/h). Films gasification rates were measured under ion irradiation from ethanol-oxygen-helium plasma at different temperatures, with different ion energies and different gas mixtures. The maximum obtained removal rate was near 230 nm/h in case of ethanol-oxygen plasma and at 150°C of the sample temperature.

  1. Photoluminescent characteristics of ion beam synthesized Ge nanoparticles in thermally grown SiO2 films

    International Nuclear Information System (INIS)

    Prospects of developing into numerous silicon-based optoelectronic applications have prompted many studies on the optical properties of Ge nanoparticles within a silicon oxide (SiO2) matrix. Even with such abundant studies, the fundamental mechanism underlying the Ge nanoparticle-induced photoluminescence (PL) is still an open question. In order to elucidate the mechanism, we dedicate this study to investigating the correlation between the PL properties and microstructure of the Ge nanoparticles synthesized in thermally grown SiO2 films. Our spectral data show that the peak position, at ∼3.1 eV or 400 nm, of the PL band arising from the Ge nanoparticles was essentially unchanged under different Ge implantation fluences and the temperatures of the following annealing process, whereas the sample preparation parameters modified or even fluctuated (in the case of the annealing temperature) the peak intensity considerably. Given the microscopically observed correlation between the nanoparticle structure and the sample preparation parameters, this phenomenon is consistent with the mechanism in which the oxygen-deficiency-related defects in the Ge/SiO2 interface act as the major luminescence centers; this mechanism also successfully explains the peak intensity fluctuation with the annealing temperature. Moreover, our FTIR data indicate the formation of GeOx upon ion implantation. Since decreasing of the oxygen-related defects by the GeOx formation is expected to be correlated with the annealing temperature, presence of the GeOx renders further experimental support to the oxygen defect mechanism. This understanding may assist the designing of the manufacturing process to optimize the Ge nanoparticle-based PL materials for different technological applications

  2. Assembly and Applications of Carbon Nanotube Thin Films

    Institute of Scientific and Technical Information of China (English)

    Hongwei ZHU; Bingqing WEI

    2008-01-01

    The ultimate goal of current research on carbon nanotubes (CNTs) is to make breakthroughs that advance nanotechnological applications of bulk CNT materials. Especially, there has been growing interest in CNT thin films because of their unique and usually enhanced properties and tremendous potential as components for use in nano-electronic and nano-mechanical device applications or as structural elements in various devices. If a synthetic or a post processing method can produce high yield of nanotube thin films, these structures will provide tremendous potential for fundamental research on these devices. This review will address the synthesis, the post processing and the device applications of self-assembled nanotube thin films.

  3. A TEM investigation of the nucleation, growth and structure of HWE grown lead-tin telluride films

    Science.gov (United States)

    Snyman, H. C.; Gouws, G. J.; Muller, R. J.

    1984-12-01

    The epitaxial growth of thin films is usually explained in terms of the interfacial energy of the critical nucleus. In a systematic TEM study of the nucleation and growth of (PbSn)Te on (111) BaF 2 substrates strong evidence is found that the post nucleation stage of recrystallisation and reorientation, rather than nucleation, is dominant in determining the degree of epitaxy. Thin films of various thicknesses were grown, in a hot wall epitaxial (HWE) system, onto (111) BaF 2 substrates at 250°C. Using dark field techniques and microdiffraction the recrystallisation processes and degree of epitaxy were studied as a function of overgrowth thickness. It was found that the degree of epitaxy was critically dependent on the film thickness. Films grown on pre-baked substrates changed from completely polycrystalline at an average thickness of 10 nm to a good epitaxially oriented overgrowth at 150 nm. The driving force for this recrystallisation process is explained in terms of the relative stability of (001) and (111) islands. Electron microscopy and microdiffraction provides direct confirmation of the proposed mechanism and its direction.

  4. Embedded polytypes in Bi2Sr2-xLaxCuO6 thin films grown by laser ablation

    International Nuclear Information System (INIS)

    We investigate the presence of secondary phases in La-doped Bi-2201 thin films grown by laser ablation. The cation ratios in the target material, the oxygen pressure, and the substrate temperature during the deposition are the main parameters determining the presence of diluted intergrowth and/or polytype aggregates. A statistical model of random intergrowth is used to analyze the x-ray diffraction (XRD) anomalies caused by hidden defects and to characterize the latter. A detailed structural XRD refinement on oriented aggregates allows us to identify the guest phase as a Bi deficient phase, Bi-1201. The occurrence of this particular embedded polytype is accompanied by a global Bi deficiency introduced in the films by the growing process and/or by the annealing treatment. The presence of La favors the Bi-1201 formation mostly as La-rich c-axis oriented aggregates. Bi excess in the target material improves considerably the crystallographic structure of Bi-2201, avoids intergrowth formation, but does not prevent the phase separation of Bi-1201 in La-doped thin films. We also investigate the influence of the deposition parameters on the type of intergrowth as well as their variation with La doping. This work introduces a specific methodology for optimizing the growth of thin films grown by laser ablation, which applies to layered oxides that admit polytypes with close formation enthalpies in their phase diagram

  5. Embedded polytypes in Bi2Sr2-xLaxCuO6 thin films grown by laser ablation

    Science.gov (United States)

    Cancellieri, C.; Lin, P. H.; Ariosa, D.; Pavuna, D.

    2007-11-01

    We investigate the presence of secondary phases in La-doped Bi-2201 thin films grown by laser ablation. The cation ratios in the target material, the oxygen pressure, and the substrate temperature during the deposition are the main parameters determining the presence of diluted intergrowth and/or polytype aggregates. A statistical model of random intergrowth is used to analyze the x-ray diffraction (XRD) anomalies caused by hidden defects and to characterize the latter. A detailed structural XRD refinement on oriented aggregates allows us to identify the guest phase as a Bi deficient phase, Bi-1201. The occurrence of this particular embedded polytype is accompanied by a global Bi deficiency introduced in the films by the growing process and/or by the annealing treatment. The presence of La favors the Bi-1201 formation mostly as La-rich c -axis oriented aggregates. Bi excess in the target material improves considerably the crystallographic structure of Bi-2201, avoids intergrowth formation, but does not prevent the phase separation of Bi-1201 in La-doped thin films. We also investigate the influence of the deposition parameters on the type of intergrowth as well as their variation with La doping. This work introduces a specific methodology for optimizing the growth of thin films grown by laser ablation, which applies to layered oxides that admit polytypes with close formation enthalpies in their phase diagram.

  6. Orientation and morphology of chloroaluminum phthalocyanine films grown by vapor deposition: Electrical field-induced molecular alignment

    Science.gov (United States)

    Basova, Tamara V.; Kiselev, Vitaly G.; Plyashkevich, Vladimir A.; Cheblakov, Pavel B.; Latteyer, Florian; Peisert, Heiko; Chassè, Thomas

    2011-02-01

    The electric field influence on the molecular orientation and the surface morphology of the chloroaluminum(III) phthalocyanine (AlClPc) films has been studied using polarization dependent Raman spectroscopy and atomic force microscopy. The experimental studies were supported by DFT quantum chemical computations of the AlClPc vibrational spectra and 15N isotopic shifts. The electric field of 1.4 kV mm -1 applied parallel to the substrate plane during the physical vapour deposition modified the film structure noticeable. The AlClPc molecules were aligned nearly perpendicular to the substrate surface (the mean tilt angle increased to ˜80° from ˜20° in the films grown without the electric field). The AFM images of the AlClPc films grown in the absence of electric field revealed a predominant amount of crystallites of polyhedron shape, whereas in the case of the applied electric field the surface was more ordered and consisted of the crystallites of a smoother shape.

  7. Characterization of carbon-doped InSb diode grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Carbon-doped p-type InSb layers grown by solid source molecular beam epitaxy are characterized using a p+-n diode structure. Based on the combination of current-voltage, secondary ion mass spectroscopy and x-ray diffraction measurements, carbon is proven to be an effective p-type dopant for InSb with hole concentration reaching the range of 1019 cm-3. It is also proven that the use of the Hall effect to determine the hole concentration in the p-type InSb layer may be unreliable in cases where the leakage current in the p+-n junction is high. A thermal trap-assisted tunnelling model with two trap levels successfully explains the origin of leakage current mechanisms in the carbon-doped InSb samples. Good agreement between measured and calculated dc characteristics of the diodes at reverse bias up to -3 V from 30 to 120 K supports the validity of the current transport model

  8. Transport and magnetotransport in PLD and CSD grown La0.5Pr0.2Sr0.3MnO3 manganite films: a comparative study

    International Nuclear Information System (INIS)

    A comparative study on the transport and magnetotransport properties of La0.5Pr0.2Sr0.3MnO3 (LPSMO) manganite films grown on single crystalline LAO substrates using Chemical Solution Deposition (CSD) and Pulsed Laser Deposition (PLD) techniques shows the dependence of TIM and MR at low temperature on the film microstructure and the strain at the film-lattice substrate in CSD and PLD grown films. The results of the XRD, AFM, ρ-T and MR measurements on CSD grown LPSMO/LAO film have been compared with those of PLD grown LPSMO/LAO film. (author)

  9. Continuous Carbon Nanotube-Based Fibers and Films for Applications Requiring Enhanced Heat Dissipation.

    Science.gov (United States)

    Liu, Peng; Fan, Zeng; Mikhalchan, Anastasiia; Tran, Thang Q; Jewell, Daniel; Duong, Hai M; Marconnet, Amy M

    2016-07-13

    The production of continuous carbon nanotube (CNT) fibers and films has paved the way to leverage the superior properties of individual carbon nanotubes for novel macroscale applications such as electronic cables and multifunctional composites. In this manuscript, we synthesize fibers and films from CNT aerogels that are continuously grown by floating catalyst chemical vapor deposition (FCCVD) and measure thermal conductivity and natural convective heat transfer coefficient from the fiber and film. To probe the mechanisms of heat transfer, we develop a new, robust, steady-state thermal characterization technique that enables measurement of the intrinsic fiber thermal conductivity and the convective heat transfer coefficient from the fiber to the surrounding air. The thermal conductivity of the as-prepared fiber ranges from 4.7 ± 0.3 to 28.0 ± 2.4 W m(-1) K(-1) and depends on fiber volume fraction and diameter. A simple nitric acid treatment increases the thermal conductivity by as much as a factor of ∼3 for the fibers and ∼6.7 for the thin films. These acid-treated CNT materials demonstrate specific thermal conductivities significantly higher than common metals with the same absolute thermal conductivity, which means they are comparatively lightweight, thermally conductive fibers and films. Beyond thermal conductivity, the acid treatment enhances electrical conductivity by a factor of ∼2.3. Further, the measured convective heat transfer coefficients range from 25 to 200 W m(-2) K(-1) for all fibers, which is higher than expected for macroscale materials and demonstrates the impact of the nanoscale CNT features on convective heat losses from the fibers. The measured thermal and electrical performance demonstrates the promise for using these fibers and films in macroscale applications requiring effective heat dissipation. PMID:27322344

  10. Friction of diamond-like carbon films in different atmospheres

    International Nuclear Information System (INIS)

    Diamond-like carbon (DLC) films constitute a class of new materials with a wide range of compositions, properties, and performance. In particular, the tribological properties of these films are rather intriguing and can be strongly influenced by the test conditions and environment. In this paper, we performed a series of model experiments in high vacuum and with various added gases to elucidate the influence of different test environments on the tribological behavior of three DLC films. Specifically, we studied the behavior of a hydrogen-free film produced by a cathodic arc process and two highly hydrogenated films produced by plasma-enhanced chemical-vapor deposition. Flats and balls used in our experiments were coated with DLC and tested in a pin-on-disc machine under a load of 1 N and at constant rotational frequency. With a low background pressure, in the 10(sup -6) Pa range, the highly hydrogenated films exhibited a friction coefficient of less than 0.01, whereas the hydrogen-free film gave a friction coefficient of approximately 0.6. Adding oxygen or hydrogen to the experimental environment changed the friction to some extent. However, admission of water vapor into the test chamber caused large changes: the friction coefficient decreased drastically for the hydrogen-free DLC film whereas it increased a bit for one of the highly hydrogenated films. These results indicate that water molecules play a prominent role in the frictional behavior of DLC films-most notably for hydrogen-free films but also for highly hydrogenated films

  11. Compensation mechanism of undoped GaAs films grown by molecular beam epitaxy using an As-valved cracker cell

    Science.gov (United States)

    Hong, C. U.; Gozu, S.; Okayasu, J.; Koyano, M.; Katayama, S.; Hori, H.; Yamada, S.

    1998-06-01

    We have investigated GaAs films epitaxially grown by molecular beam epitaxy (MBE) using a valved As-cracker source. When the cracking temperature ( Tc) of the As-valved cracker cell is raised, which means the dominant As species changes from As 4 to As 2, the conduction type of the films changed from p - to n -. In order to clarify the origins of the change of compensation mechanism of those GaAs films, estimations were made using electrical (Hall effect) and optical (photoluminescence and far-infrared) measurements. Impurity incorporation behaviors suggested by these estimations are found to give a reasonable explanation for the change of conduction type, that is, the change of compensation mechanism.

  12. Studies of zinc-blende type MnAs thin films grown on InP(001) substrates by XRD

    Science.gov (United States)

    Oomae, H.; Irizawa, S.; Jinbo, Y.; Toyota, H.; Kambayashi, T.; Uchitomi, N.

    2013-09-01

    The detailed crystalline structure of molecular beam epitaxially grown MnAs thin films on InP(001) substrate has been investigated using high resolution X-ray diffraction techniques. Reciprocal space mapping of the MnAs/InP(001) samples indicates that the MnAs has a cubic zinc-blende (zb) structure with the epitaxial relationship zb-MnAs[110]|InP[110]. The lattice constant of zb-MnAs is ˜6.06 Å. The MnAs lattice is relaxed and is mosaic-like likely due to large lattice mismatch between the film and InP substrate. The isotropic nature of the magnetic properties supported our conjecture that the MnAs epitaxial film under study has indeed a cubic structure.

  13. Study of electrical and optical properties of zinc oxide thin films grown by the reactive magnetron sputtering method

    International Nuclear Information System (INIS)

    Zinc oxide (ZnO) which is very perspective for practical application, because of its property of high transparency in a visible light and simultaneously high electric conductance, is researched in this paper. Min purposes of the study of ZnO films grown by a reactive magnetron deposition method were to define the thin films parameters - preparation condition relationship. The discharge power dependence as well as total pressure and oxygen partial pressure dependence od deposition speed is defined. The optimal regimes for obtaining of minimum resistivity are determined. P-n-junctions are formed by an ion-beam deposition of films ZnO on p-type silicon substrates, their volt-ampere characteristics are measured. The value of forbidden gap is obtained from optical transmission measurement. (author)

  14. Positive magnetoresistance in ferromagnetic Nd-doped In2O3 thin films grown by pulse laser deposition

    KAUST Repository

    Xing, G. Z.

    2014-05-23

    We report the magnetic and magnetotransport properties of (In 0.985Nd0.015)2O2.89 thin films grown by pulse laser deposition. The clear magnetization hysteresis loops with the complementary magnetic domain structure reveal the intrinsic room temperature ferromagnetism in the as-prepared films. The strong sp-f exchange interaction as a result of the rare earth doping is discussed as the origin of the magnetotransport behaviours. A positive magnetoresistance (∼29.2%) was observed at 5 K and ascribed to the strong ferromagnetic sp-f exchange interaction in (In0.985Nd0.015)2O 2.89 thin films due to a large Zeeman splitting in an external magnetic field of 50 KOe. © 2014 AIP Publishing LLC.

  15. Epitaxially grown crystalline silicon thin-film solar cells reaching 16.5% efficiency with basic cell process

    International Nuclear Information System (INIS)

    We report about the current performance of crystalline silicon thin-film (cSiTF) solar cells that are a very attractive alternative to conventional wafer-based silicon solar cells if sufficiently high cell efficiencies are achieved at acceptable cost of production. Applying a standard cell process (diffused POCl3 emitter, front contacts by photolithography, no surface texture) to thin-films deposited with a lab-type reactor, specifically designed for high-throughput photovoltaic applications, on highly-doped Cz substrates we routinely obtain efficiencies above 16%. On 1 Ω cm FZ material substrates we reach efficiencies up to 18.0%, which is among the highest thin-film efficiencies ever reported. Additionally, a comparison to microelectronic-grade epitaxially grown cSiTF material underlines the excellent electrical quality of the epitaxial layers deposited.

  16. Measured and modelled carbon and water fluxes in hybrid willows grown for biofuel production

    Science.gov (United States)

    Wertin, T. M.; LeBauer, D.; Volk, T.; Long, S.; Leakey, A. D.

    2014-12-01

    Biofuels have the potential to meet future energy needs. Worldwide, up to 75% of biofuels produced are derived from woody sources. Coppiced hybrid willow is among the most promising woody biofuel sources due to its ability to rapidly regenerate after cutting, high biomass yields, low nutrient requirements and ability to be grown on marginal land, abandoned land and land easily erodible under annual cultivation. However, models used to assess the potential viability and sustainability of commercial biomass production by willow in the northeastern, northern and northwestern USA remain unsophisticated and lack key parameterization data. Most significantly, models do not explicitly represent the coppiced growth form. This study tests the ability of a canopy model to predict carbon and water fluxes in two highly productive, but structurally distinct hybrid willows (Salix miyabeana and Salix purpurea) grown in central NY. S. miyaneana has only a few, large diameter stems per stool prior to harvest, while S. purpurea maintains numerous, small diameter stems until harvest. Canopy structure also varies substantially within a growing season. For example, in S. miyabeana stem number decreased by 40% while total basal area increased by 50% within year 2 of the third coppice cycle. Model predictions of water use are compared with stand transpiration measured by sap flow. Model predictions of biomass production are compared to destructive harvest data. Sensitivity of predicted fluxes to variation between genotypes in key physiological parameters is also tested.

  17. Greater osteoblast functions on multiwalled carbon nanotubes grown from anodized nanotubular titanium for orthopedic applications

    Science.gov (United States)

    Sirivisoot, Sirinrath; Yao, Chang; Xiao, Xingcheng; Sheldon, Brian W.; Webster, Thomas J.

    2007-09-01

    Titanium (Ti) is the most widely implanted orthopedic material. However, current formulations of Ti have an average orthopedic implant functional lifetime of only 10-15 years. While there are many reasons why orthopedic implants fail, one is a lack of initial and sustained integration into juxtaposed bone. To improve the cytocompatibility properties of Ti for orthopedic applications, parallel multiwalled carbon nanotubes (CNTs) were grown from the pores of anodized nanotubular Ti by a chemical vapor deposition process in the present study. The results of this study provided evidence, for the first time, that osteoblast (bone forming cell) functions (specifically, alkaline phosphatase activity and calcium deposition) were significantly greater on CNTs grown from anodized Ti than on anodized Ti without CNTs and currently-used Ti in orthopedics for up to 21 days. In summary, this study showed that bone growth could possibly be enhanced on currently-used Ti implants with protruding CNTs and, thus, they should be further studied for orthopedic applications.

  18. Films, Buckypapers and Fibers from Clay, Chitosan and Carbon Nanotubes

    OpenAIRE

    Marc in het Panhuis; Holly Warren; Higgins, Thomas M.

    2011-01-01

    The mechanical and electrical characteristics of films, buckypapers and fiber materials from combinations of clay, carbon nanotubes (CNTs) and chitosan are described. The rheological time-dependent characteristics of clay are maintained in clay–carbon nanotube–chitosan composite dispersions. It is demonstrated that the addition of chitosan improves their mechanical characteristics, but decreases electrical conductivity by three-orders of magnitude compared to clay–CNT materials. We show that ...

  19. Capacitive humidity sensing properties of carbon nanotubes grown on silicon nanoporous pillar array

    Institute of Scientific and Technical Information of China (English)

    JIANG WeiFen; XIAO ShunHua; ZHANG HuanYun; DONG YongFen; LI XinJian

    2007-01-01

    Multi-walled carbon nanotubes (CNTs) were grown on silicon nanoporous pillar array (Si-NPA) by thermal chemical vapor deposition method, and the structural and capacitive humidity sensing properties of CNT/Si-NPA were studied. It was found that with the relative humidity (RH) changing from 11% to 95%, a device response of ~480% was achieved at the frequency of 50000 Hz, and a linear device response curve could be obtained by adopting longitudinal logarithmic coordinate. The response/recovery times were measured to be ~20 s and ~10 s, respectively, which indicated a rather fast response/recovery rate. The adsorption-desorption dynamic cycle experiments demonstrated the high measurement reproducibility of CNT/Si-NPA sensors. These excellent performances were attributed to the unique surface structure, morphology and chemical inertness of CNT/Si-NPA.

  20. CVD-grown horizontally aligned single-walled carbon nanotubes: synthesis routes and growth mechanisms.

    Science.gov (United States)

    Ibrahim, Imad; Bachmatiuk, Alicja; Warner, Jamie H; Büchner, Bernd; Cuniberti, Gianaurelio; Rümmeli, Mark H

    2012-07-01

    Single-walled carbon nanotubes (SWCNTs) have attractive electrical and physical properties, which make them very promising for use in various applications. For some applications however, in particular those involving electronics, SWCNTs need to be synthesized with a high degree of control with respect to yield, length, alignment, diameter, and chirality. With this in mind, a great deal of effort is being directed to the precision control of vertically and horizontally aligned nanotubes. In this review the focus is on the latter, horizontally aligned tubes grown by chemical vapor deposition (CVD). The reader is provided with an in-depth review of the established vapor deposition orientation techniques. Detailed discussions on the characterization routes, growth parameters, and growth mechanisms are also provided. PMID:22619167

  1. Capacitive humidity sensing properties of carbon nanotubes grown on silicon nanoporous pillar array

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    Multi-walled carbon nanotubes (CNTs) were grown on silicon nanoporous pillar array (Si-NPA) by thermal chemical vapor deposition method, and the structural and capacitive humidity sensing properties of CNT/Si-NPA were studied. It was found that with the relative humidity (RH) changing from 11% to 95%, a device re-sponse of ~480% was achieved at the frequency of 50000 Hz, and a linear device response curve could be obtained by adopting longitudinal logarithmic coordinate. The response/recovery times were measured to be ~20 s and ~10 s, respectively, which indicated a rather fast response/recovery rate. The adsorption-desorption dynamic cycle experiments demonstrated the high measurement reproducibility of CNT/Si-NPA sensors. These excellent performances were attributed to the unique surface structure, morphology and chemical inertness of CNT/Si-NPA.

  2. Electrocatalytic activity of Pt grown by ALD on carbon nanotubes for Si-based DMFC applications

    DEFF Research Database (Denmark)

    Johansson, Alicia Charlotte; Dalslet, Bjarke Thomas; Yang, R.B.;

    2012-01-01

    We present an anode design for silicon-based direct methanol fuel cell (DMFC) applications. Platinum was deposited conformally by atomic layer deposition (ALD) onto vertically aligned, nitrogendoped multi-walled carbon nanotubes (MWCNTs) grown on porous silicon. The deposition was carried out in a...... top-flow ALD reactor at 250°C, using MeCpPtMe3 and O2 as precursors. The anode was tested for the methanol oxidation reaction (MOR) in a three-electrode electrochemical set-up and it showed improved catalytic activity compared to a reference sample of Pt deposited on flat Si. It is demonstrated that...... ALD could be a MEMS compatible deposition technique for Si-based fuel cell applications. © The Electrochemical Society....

  3. Structural properties of the titanium dioxide thin films grown by atomic layer deposition at various numbers of reaction cycles

    International Nuclear Information System (INIS)

    A dependence of structural properties of TiO2 films grown on both Si- and Ti-substrates by atomic layer deposition (ALD) at the temperature range of 250-300 deg. C from titanium ethoxide and water on the number of reaction cycles N was investigated using Fourier-transform infrared (FTIR) spectroscopy and X-Ray diffraction (XRD). TiO2 films grown on both Si- and Ti-substrates revealed amorphous structure at low values of N 2 with structure of anatase on both types of substrates and according to XRD-measurements the sizes of crystallites rose with the increase of N. The maximum anatase crystallite size for TiO2 grown on Ti-substrate was found to be on ∼35% lower in comparing with that for TiO2 grown on Si-substrate. A use of titanium methoxide as a Ti precursor with the ligand size smaller than in case of titanium ethoxide allowed to observe an influence of the ligand size on both the growth per cycle and structural properties of TiO2. The average growth per cycle of TiO2 deposited from titanium methoxide and water (0.052 ± 0.01 nm/cycle) was essentially higher than that for TiO2 grown from titanium ethoxide and water (0.043 ± 0.01 nm/cycle). Ligands of smaller sizes were found to promote the higher crystallinity of TiO2 in comparison with the case of using the titanium precursor with ligands of bigger sizes.

  4. Thin yttrium iron garnet films grown by pulsed laser deposition: Crystal structure, static, and dynamic magnetic properties

    Energy Technology Data Exchange (ETDEWEB)

    Sokolov, N. S., E-mail: nsokolov@fl.ioffe.ru; Fedorov, V. V.; Korovin, A. M.; Suturin, S. M.; Baranov, D. A.; Gastev, S. V.; Krichevtsov, B. B.; Bursian, V. E.; Lutsev, L. V. [Ioffe Physical-Technical Institute of Russian Academy of Sciences, St. Petersburg 194021 (Russian Federation); Maksimova, K. Yu.; Grunin, A. I. [Immanuel Kant Baltic Federal University, Kaliningrad 236041 (Russian Federation); Tabuchi, M. [Synchrotron Radiation Research Center, Nagoya University, Nagoya 464-8603 (Japan)

    2016-01-14

    Pulsed laser deposition has been used to grow thin (10–84 nm) epitaxial layers of Yttrium Iron Garnet Y{sub 3}Fe{sub 5}O{sub 12} (YIG) on (111)–oriented Gadolinium Gallium Garnet substrates at different growth conditions. Atomic force microscopy showed flat surface morphology both on micrometer and nanometer scales. X-ray diffraction measurements revealed that the films are coherent with the substrate in the interface plane. The interplane distance in the [111] direction was found to be by 1.2% larger than expected for YIG stoichiometric pseudomorphic film indicating presence of rhombohedral distortion in this direction. Polar Kerr effect and ferromagnetic resonance measurements showed existence of additional magnetic anisotropy, which adds to the demagnetizing field to keep magnetization vector in the film plane. The origin of the magnetic anisotropy is related to the strain in YIG films observed by XRD. Magneto-optical Kerr effect measurements revealed important role of magnetization rotation during magnetization reversal. An unusual fine structure of microwave magnetic resonance spectra has been observed in the film grown at reduced (0.5 mTorr) oxygen pressure. Surface spin wave propagation has been demonstrated in the in-plane magnetized films.

  5. Thin yttrium iron garnet films grown by pulsed laser deposition: Crystal structure, static, and dynamic magnetic properties

    Science.gov (United States)

    Sokolov, N. S.; Fedorov, V. V.; Korovin, A. M.; Suturin, S. M.; Baranov, D. A.; Gastev, S. V.; Krichevtsov, B. B.; Maksimova, K. Yu.; Grunin, A. I.; Bursian, V. E.; Lutsev, L. V.; Tabuchi, M.

    2016-01-01

    Pulsed laser deposition has been used to grow thin (10-84 nm) epitaxial layers of Yttrium Iron Garnet Y3Fe5O12 (YIG) on (111)-oriented Gadolinium Gallium Garnet substrates at different growth conditions. Atomic force microscopy showed flat surface morphology both on micrometer and nanometer scales. X-ray diffraction measurements revealed that the films are coherent with the substrate in the interface plane. The interplane distance in the [111] direction was found to be by 1.2% larger than expected for YIG stoichiometric pseudomorphic film indicating presence of rhombohedral distortion in this direction. Polar Kerr effect and ferromagnetic resonance measurements showed existence of additional magnetic anisotropy, which adds to the demagnetizing field to keep magnetization vector in the film plane. The origin of the magnetic anisotropy is related to the strain in YIG films observed by XRD. Magneto-optical Kerr effect measurements revealed important role of magnetization rotation during magnetization reversal. An unusual fine structure of microwave magnetic resonance spectra has been observed in the film grown at reduced (0.5 mTorr) oxygen pressure. Surface spin wave propagation has been demonstrated in the in-plane magnetized films.

  6. Thin yttrium iron garnet films grown by pulsed laser deposition: Crystal structure, static, and dynamic magnetic properties

    International Nuclear Information System (INIS)

    Pulsed laser deposition has been used to grow thin (10–84 nm) epitaxial layers of Yttrium Iron Garnet Y3Fe5O12 (YIG) on (111)–oriented Gadolinium Gallium Garnet substrates at different growth conditions. Atomic force microscopy showed flat surface morphology both on micrometer and nanometer scales. X-ray diffraction measurements revealed that the films are coherent with the substrate in the interface plane. The interplane distance in the [111] direction was found to be by 1.2% larger than expected for YIG stoichiometric pseudomorphic film indicating presence of rhombohedral distortion in this direction. Polar Kerr effect and ferromagnetic resonance measurements showed existence of additional magnetic anisotropy, which adds to the demagnetizing field to keep magnetization vector in the film plane. The origin of the magnetic anisotropy is related to the strain in YIG films observed by XRD. Magneto-optical Kerr effect measurements revealed important role of magnetization rotation during magnetization reversal. An unusual fine structure of microwave magnetic resonance spectra has been observed in the film grown at reduced (0.5 mTorr) oxygen pressure. Surface spin wave propagation has been demonstrated in the in-plane magnetized films

  7. Engineering the mechanical properties of ultrabarrier films grown by atomic layer deposition for the encapsulation of printed electronics

    International Nuclear Information System (INIS)

    Direct deposition of barrier films by atomic layer deposition (ALD) onto printed electronics presents a promising method for packaging devices. Films made by ALD have been shown to possess desired ultrabarrier properties, but face challenges when directly grown onto surfaces with varying composition and topography. Challenges include differing nucleation and growth rates across the surface, stress concentrations from topography and coefficient of thermal expansion mismatch, elastic constant mismatch, and particle contamination that may impact the performance of the ALD barrier. In such cases, a polymer smoothing layer may be needed to coat the surface prior to ALD barrier film deposition. We present the impact of architecture on the performance of aluminum oxide (Al2O3)/hafnium oxide (HfO2) ALD nanolaminate barrier films deposited on fluorinated polymer layer using an optical calcium (Ca) test under damp heat. It is found that with increasing polymer thickness, the barrier films with residual tensile stress are prone to cracking resulting in rapid failure of the Ca sensor at 50 °C/85% relative humidity. Inserting a SiNx layer with residual compressive stress between the polymer and ALD layers is found to prevent cracking over a range of polymer thicknesses with more than 95% of the Ca sensor remaining after 500 h of testing. These results suggest that controlling mechanical properties and film architecture play an important role in the performance of direct deposited ALD barriers

  8. Engineering the mechanical properties of ultrabarrier films grown by atomic layer deposition for the encapsulation of printed electronics

    Energy Technology Data Exchange (ETDEWEB)

    Bulusu, A.; Singh, A.; Kim, H. [Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Wang, C. Y.; Dindar, A.; Fuentes-Hernandez, C.; Kippelen, B. [School of Electrical and Computer Engineering, Georgia Institute of Technology, and Center for Organic Photonics and Electronics, Atlanta, Georgia 30332 (United States); Cullen, D. [Oak Ridge National Laboratory, P.O. Box 2008 MS-6064, Oak Ridge, Tennessee 37831 (United States); Graham, S., E-mail: sgraham@gatech.edu [Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Oak Ridge National Laboratory, P.O. Box 2008 MS-6064, Oak Ridge, Tennessee 37831 (United States)

    2015-08-28

    Direct deposition of barrier films by atomic layer deposition (ALD) onto printed electronics presents a promising method for packaging devices. Films made by ALD have been shown to possess desired ultrabarrier properties, but face challenges when directly grown onto surfaces with varying composition and topography. Challenges include differing nucleation and growth rates across the surface, stress concentrations from topography and coefficient of thermal expansion mismatch, elastic constant mismatch, and particle contamination that may impact the performance of the ALD barrier. In such cases, a polymer smoothing layer may be needed to coat the surface prior to ALD barrier film deposition. We present the impact of architecture on the performance of aluminum oxide (Al{sub 2}O{sub 3})/hafnium oxide (HfO{sub 2}) ALD nanolaminate barrier films deposited on fluorinated polymer layer using an optical calcium (Ca) test under damp heat. It is found that with increasing polymer thickness, the barrier films with residual tensile stress are prone to cracking resulting in rapid failure of the Ca sensor at 50 °C/85% relative humidity. Inserting a SiN{sub x} layer with residual compressive stress between the polymer and ALD layers is found to prevent cracking over a range of polymer thicknesses with more than 95% of the Ca sensor remaining after 500 h of testing. These results suggest that controlling mechanical properties and film architecture play an important role in the performance of direct deposited ALD barriers.

  9. Magnetic and structural properties of Co{sub 2}FeAl thin films grown on Si substrate

    Energy Technology Data Exchange (ETDEWEB)

    Belmeguenai, Mohamed, E-mail: belmeguenai.mohamed@univ-paris13.fr [LSPM (CNRS-UPR 3407) 99 Avenue Jean-Baptiste Clément Université Paris 13, 93430 Villetaneuse (France); Tuzcuoglu, Hanife [LSPM (CNRS-UPR 3407) 99 Avenue Jean-Baptiste Clément Université Paris 13, 93430 Villetaneuse (France); Gabor, Mihai; Petrisor, Traian [Center for Superconductivity, Spintronics and Surface Science, Technical University of Cluj-Napoca, Street Memorandumului No. 28, RO-400114 Cluj-Napoca (Romania); Tiusan, Coriolan [Center for Superconductivity, Spintronics and Surface Science, Technical University of Cluj-Napoca, Street Memorandumului No. 28, RO-400114 Cluj-Napoca (Romania); Institut Jean Lamour, CNRS, Université de Nancy, BP 70239, F-54506 Vandoeuvre (France); Berling, Dominique [IS2M (CNRS-LRC 7228), 15 rue Jean Starcky, Université de Haute-Alsace, BP 2488, 68057 Mulhouse-Cedex (France); Zighem, Fatih; Mourad Chérif, Salim [LSPM (CNRS-UPR 3407) 99 Avenue Jean-Baptiste Clément Université Paris 13, 93430 Villetaneuse (France)

    2015-01-01

    The correlation between magnetic and structural properties of Co{sub 2}FeAl (CFA) thin films of different thicknesses (10 nmgrown at room temperature on MgO-buffered Si/SiO{sub 2} substrates and annealed at 600 °C has been studied. x-ray diffraction (XRD) measurements revealed an (011) out-of-plane textured growth of the films. The deduced lattice parameter increases with the film thickness. Moreover, pole figures showed no in-plane preferential growth orientation. The magneto-optical Kerr effect hysteresis loops showed the presence of a weak in-plane uniaxial anisotropy with a random easy axis direction. The coercive field, measured with the applied field along the easy axis direction, and the uniaxial anisotropy field increase linearly with the inverse of the CFA thickness. The microstrip line ferromagnetic resonance measurements for in-plane and perpendicular applied magnetic fields revealed that the effective magnetization and the uniaxial in-plane anisotropy field follow a linear variation versus the inverse CFA thickness. This allows deriving a perpendicular surface anisotropy coefficient of −1.86 erg/cm{sup 2}. - Highlights: • Various Co{sub 2}FeAl thin films were grown on a Si(001) substrates and annealed at 600 °C. • The thickness dependence of magnetic and structural properties has been studied. • X-ray measurements revealed an (011) out-of-plane textured growth of the films. • The easy axis coercive field varies linearly with the inverse CFA thickness. • The effective magnetization increases linearly with the inverse film thickness.

  10. Thermal property tuning in aligned carbon nanotube films and random entangled carbon nanotube films by ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Jing [Department of Materials Science and Engineering, Texas A& M University, College Station, Texas 77843 (United States); Chen, Di; Wang, Xuemei [Department of Nuclear Engineering, Texas A& M University, College Station, Texas 77843 (United States); Bykova, Julia S.; Zakhidov, Anvar A. [The Alan G. MacDiarmid NanoTech Institute, University of Texas at Dallas, Richardson, Texas 75080 (United States); Shao, Lin, E-mail: lshao@tamu.edu [Department of Materials Science and Engineering, Texas A& M University, College Station, Texas 77843 (United States); Department of Nuclear Engineering, Texas A& M University, College Station, Texas 77843 (United States)

    2015-10-12

    Ion irradiation effects on thermal property changes are compared between aligned carbon nanotube (A-CNT) films and randomly entangled carbon nanotube (R-CNT) films. After H, C, and Fe ion irradiation, a focusing ion beam with sub-mm diameter is used as a heating source, and an infrared signal is recorded to extract thermal conductivity. Ion irradiation decreases thermal conductivity of A-CNT films, but increases that of R-CNT films. We explain the opposite trends by the fact that neighboring CNT bundles are loosely bonded in A-CNT films, which makes it difficult to create inter-tube linkage/bonding upon ion irradiation. In a comparison, in R-CNT films, which have dense tube networking, carbon displacements are easily trapped between touching tubes and act as inter-tube linkage to promote off-axial phonon transport. The enhancement overcomes the phonon transport loss due to phonon-defect scattering along the axial direction. A model is established to explain the dependence of thermal conductivity changes on ion irradiation parameters including ion species, energies, and current.

  11. Thermal property tuning in aligned carbon nanotube films and random entangled carbon nanotube films by ion irradiation

    International Nuclear Information System (INIS)

    Ion irradiation effects on thermal property changes are compared between aligned carbon nanotube (A-CNT) films and randomly entangled carbon nanotube (R-CNT) films. After H, C, and Fe ion irradiation, a focusing ion beam with sub-mm diameter is used as a heating source, and an infrared signal is recorded to extract thermal conductivity. Ion irradiation decreases thermal conductivity of A-CNT films, but increases that of R-CNT films. We explain the opposite trends by the fact that neighboring CNT bundles are loosely bonded in A-CNT films, which makes it difficult to create inter-tube linkage/bonding upon ion irradiation. In a comparison, in R-CNT films, which have dense tube networking, carbon displacements are easily trapped between touching tubes and act as inter-tube linkage to promote off-axial phonon transport. The enhancement overcomes the phonon transport loss due to phonon-defect scattering along the axial direction. A model is established to explain the dependence of thermal conductivity changes on ion irradiation parameters including ion species, energies, and current

  12. Effects of energetic species during the growth of nitrogenated amorphous carbon thin films on their nanomechanical properties

    International Nuclear Information System (INIS)

    Amorphous carbon nitride (CN x) films are promising materials either as wear-resistant or as solid-lubricant coatings, depending on their mechanical and tribological behavior. In this work, we produced amorphous CN x films by reactive magnetron sputtering, and we varied independently the film density, sp3/sp2 content and [N] concentration. The morphology, density and hybridization state of the CN x films were studied ex situ by X-ray reflectivity (XRR). Also, the effects of energetic species (mainly N+ or Ar+) on their microstructure and composition were investigated. Using the assumptions of the subplantation model and the results of SRIM simulations, we correlated the density of the films and [N] with the N+ ion energy. The nanomechanical and tribological properties of CN x films were studied by nanoindentation and nanoscratch tests. While both adhesion and ploughing mechanisms contribute to the friction behavior in the intermediate and high load ranges, the dominant friction mechanism in the low-load range was attributed to adhesion of the film to the substrate. CN x films grown without ion bombardment (IBD), depending on the normal load, will deform either elastically or elastically-plastically, and may even delaminate. For loads below 5 mN, nanoscratching showed mainly elastic behavior of the film, while above 5 mN, a mixed elastic-plastic behavior was identified. However, the scratch and friction response of the films grown under high-energy ion bombardment (IBD) during ion beam assisted deposition showed a load-dependent transition. The results will be discussed in detail

  13. Characterization of oxide film layers formed on A106 B carbon steel in simulated secondary coolant conditions of nuclear power plants

    International Nuclear Information System (INIS)

    The water chemistry of the secondary coolant in the majority Nuclear Power Plants is controlled by AVT (All Volatile Treatment) procedure, wherein volatile amines are use to maintain the alkaline pH required for minimizing the corrosion of structural materials which one of them is Carbon Steel. In this procedure: hydrazine, morpholine and ethanolamine are used commonly as conditioning reagents. In this context, experiments were carried out by exposing carbon steel A106 B samples in a simulated secondary coolant in order to study the nature of the oxide films. The tests were performed in a static autoclave at 260 ºC using two media: 1) Hydrazine + morpholine and 2) Hydrazine + ethanolamine during different exposure periods up to ≈1020 h. The composition, surface morphology, X-ray diffraction, a chemical descaling procedure were used- XPS, was also employed, to analyze the films grown during ≈1020 h in both media. The characterization showed that magnetite was the main corrosion product formed in the films grown in the two media. The material weight loss (W) could be fitted by a law of the type W = k tn, up to 1020 h of exposure, resulting in n =0,42, k = 6,24 for films grown in medium 1) and n = 0,39, k =6,08 for films grown in medium 2); where W is in mg/d m2 and t in h. (author)

  14. Humidity resistant hydrogenated carbon nitride films

    Czech Academy of Sciences Publication Activity Database

    Mikmeková, Eliška; Polčák, J.; Sobota, Jaroslav; Müllerová, Ilona; Peřina, Vratislav; Caha, O.

    2013-01-01

    Roč. 275, 15 June (2013), s. 7-13. ISSN 0169-4332 R&D Projects: GA MŠk ED0017/01/01 Institutional support: RVO:68081731 ; RVO:61389005 Keywords : thin films * corrosion behanior * delamination * stress Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering; BH - Optics, Masers, Lasers (UJF-V) Impact factor: 2.538, year: 2013

  15. Preparation of thin carbon films (1963)

    International Nuclear Information System (INIS)

    Carbon deposits have been prepared on silica glass supports in order to determine more accurately than by weighing the losses liable to occur during oxidation, for example under irradiation in the presence of CO2. Several processes have been studied with a view to obtaining deposits for which the variation in optical density as a function of carbon departure shall be reproducible for each sample. Among the methods used, the most satisfactory is that in which the pyrolytic carbon deposited on a carbon filament is evaporated; however only the samples prepared simultaneously exhibit the required identical behaviour. The carbonaceous deposits have been studied by micro-electronic diffraction. An examination of the photographs shows the presence of graphite monocrystals of about (30 μ)2. (author)

  16. Tribological behavior and film formation mechanisms of carbon nanopearls

    Science.gov (United States)

    Hunter, Chad Nicholas

    Carbon nanopearls (CNPs) are amorphous carbon spheres that contain concentrically-oriented nanometer-sized graphitic flakes. Because of their spherical shape, size (˜150 nm), and structure consisting of concentrically oriented nano-sized sp2 flakes, CNPs are of interest for tribological applications, in particular for use in solid lubricant coatings. These studies were focused on investigating mechanisms of CNP lubrication, development of methods to deposit CNP onto substrates, synthesizing CNP-gold hybrid films using Matrix Assisted Pulsed Laser Evaporation (MAPLE) and magnetron sputtering, and studying plasmas and other species present during film deposition using an Electrostatic Quadrupole Plasma (EQP) analyzer. CNPs deposited onto silicon using drop casting with methanol showed good lubricating properties in sliding contacts under dry conditions, where a transfer film was created in which morphology changed from nano-sized spheres to micron-sized agglomerates consisting of many highly deformed CNPs in which the nano-sized graphene flakes are sheared from the wrapped layer structure of the CNPs. The morphology of carbon nanopearl films deposited using a MAPLE system equipped with a 248 nm KrF excimer laser source was found to be influenced by multiple factors, including composition of the matrix solvent, laser energy and repetition rate, background pressure, and substrate temperature. The best parameters for depositing CNP films that are disperse, droplet-free and have the maximum amount of material deposited are as follows: toluene matrix, 700 mJ, 1 Hz, 100°C substrate temperature, and unregulated vacuum pressure. During depositions using MAPLE and sputtering in argon, electron ionization of toluene vapor generated from the MAPLE target and charge exchange reactions between toluene vapor and the argon plasma generated by the magnetron caused carbon to be deposited onto the gold sputter target. Thin films deposited under these conditions contained high

  17. Scattering of terahertz radiation from oriented carbon nanotube films

    DEFF Research Database (Denmark)

    Eichhorn, Finn; Jepsen, Peter Uhd; Schroeder, Nicholas;

    2009-01-01

    Session title: IThC-THz Interactions with Condensed Matter. We report on the use of terahertz time-domain spectroscopy to measure scattering from multi-walled carbon nanotubes aligned normal to the film plane. Measurements indicate scattering from the nanotubes is significantly stronger than for...

  18. Reactive Bonding Film for Bonding Carbon Foam Through Metal Extrusion

    CERN Document Server

    Chertok, Maxwell; Irving, Michael; Neher, Christian; Tripathi, Mani; Wang, Ruby; Zheng, Gayle

    2016-01-01

    Future tracking detectors, such as those under development for the High Luminosity LHC, will require mechanical structures employing novel materials to reduce mass while providing excellent strength, thermal conductivity, and radiation tolerance. Adhesion methods for such materials are under study at present. This paper demonstrates the use of reactive bonding film as an adhesion method for bonding carbon foam.

  19. Plasma-enhanced Deposition of Nano-Structured Carbon Films

    Institute of Scientific and Technical Information of China (English)

    Yang Qiaoqin (杨巧勤); Xiao Chijin (肖持进); A. Hirose

    2005-01-01

    By pre-treating substrate with different methods and patterning the catalyst, selective and patterned growth of diamond and graphitic nano-structured carbon films have been realized through DC Plasma-Enhanced Hot Filament Chemical Vapor Deposition (PE-HFCVD).Through two-step processing in an HFCVD reactor, novel nano-structured composite diamond films containing a nanocrystalline diamond layer on the top of a nanocone diamond layer have been synthesized. Well-aligned carbon nanotubes, diamond and graphitic carbon nanocones with controllable alignment orientations have been synthesized by using PE-HFCVD. The orientation of the nanostructures can be controlled by adjusting the working pressure. In a Microwave Plasma Enhanced Chemical Vapor Deposition (MW-PECVD) reactor, high-quality diamond films have been synthesized at low temperatures (310 ℃~550 ℃) without adding oxygen or halogen gas in a newly developed processing technique. In this process, carbon source originates from graphite etching, instead of hydrocarbon. The lowest growth temperature for the growth of nanocrystalline diamond films with a reasonable growth rate without addition of oxygen or halogen is 260 ℃.

  20. Fabrication and Cytocompatibility of In Situ Crosslinked Carbon Nanomaterial Films

    Science.gov (United States)

    Patel, Sunny C.; Lalwani, Gaurav; Grover, Kartikey; Qin, Yi-Xian; Sitharaman, Balaji

    2015-05-01

    Assembly of carbon nanomaterials into two-dimensional (2D) coatings and films that harness their unique physiochemical properties may lead to high impact energy capture/storage, sensors, and biomedical applications. For potential biomedical applications, the suitability of current techniques such as chemical vapor deposition, spray and dip coating, and vacuum filtration, employed to fabricate macroscopic 2D all carbon coatings or films still requires thorough examination. Each of these methods presents challenges with regards to scalability, suitability for a large variety of substrates, mechanical stability of coatings or films, or biocompatibility. Herein we report a coating process that allow for rapid, in situ chemical crosslinking of multi-walled carbon nanotubes (MWCNTs) into macroscopic all carbon coatings. The resultant coatings were found to be continuous, electrically conductive, significantly more robust, and cytocompatible to human adipose derived stem cells. The results lay groundwork for 3D layer-on-layer nanomaterial assemblies (including various forms of graphene) and also opens avenues to further explore the potential of MWCNT films as a novel class of nano-fibrous mats for tissue engineering and regenerative medicine.

  1. Nanometer-thick copper films grown by thermal atomic layer deposition

    International Nuclear Information System (INIS)

    Because of the superior properties of copper, it has been of great interest as a conducting material to replace aluminum in device manufacturing. In this study, we investigated the influence of substrate temperature, film thickness, and rapid thermal annealing (RTA) on the deposition of Cu films of thickness less than 10 nm. Compared to thicker films, the electrical properties of nanometer-thick films were found to be very sensitive to the deposition temperature. Further, we determined the optimal deposition temperature to obtain low-resistivity nanometer-thick Cu films. The Cu films were deposited with island-type growth, and the interconnection between grains plays a major role in the resistivity of the films. We also determined the critical thickness at which Cu films exhibit continuous growth as 8 nm. After RTA, the film color darkened, electron scattering became weak, and the resistivity reduced more than 20% with annealing at 300–350 °C, because of the growth of Cu grains. The results of this study indicate that thermal ALD can be used in conjunction with RTA to produce low-resistivity Cu thin films, the thickness, uniformity, and conformality of which can be easily controlled. - Highlights: • Resistance of nanometer-thick Cu film was sensitive to deposition temperature. • Optimal temperature deposition was determined to obtain low-resistivity. • Critical thickness at which Cu films exhibit continuous growth was determined. • Resistivity reduced with annealing at 300–350 °C

  2. Optical properties and structure of HfO{sub 2} thin films grown by high pressure reactive sputtering

    Energy Technology Data Exchange (ETDEWEB)

    MartInez, F L [Departamento de Electronica y TecnologIa de Computadoras, Universidad Politecnica de Cartagena, Campus Universitario Muralla del Mar, E-30202 Cartagena (Spain); Toledano-Luque, M [Departamento de Fisica Aplicada III, Universidad Complutense de Madrid, E-28040 Madrid (Spain); GandIa, J J [Departamento de EnergIa, CIEMAT, Avda. Complutense 22, E-28040 Madrid (Spain); Carabe, J [Departamento de EnergIa, CIEMAT, Avda. Complutense 22, E-28040 Madrid (Spain); Bohne, W [Hahn-Meitner-Institut Berlin, Abteilung SF4, D-14109 Berlin (Germany); Roehrich, J [Hahn-Meitner-Institut Berlin, Abteilung SF4, D-14109 Berlin (Germany); Strub, E [Hahn-Meitner-Institut Berlin, Abteilung SF4, D-14109 Berlin (Germany); Martil, I [Departamento de Fisica Aplicada III, Universidad Complutense de Madrid, E-28040 Madrid (Spain)

    2007-09-07

    Thin films of hafnium oxide (HfO{sub 2}) have been grown by high pressure reactive sputtering on transparent quartz substrates (UV-grade silica) and silicon wafers. Deposition conditions were adjusted to obtain polycrystalline as well as amorphous films. Optical properties of the films deposited on the silica substrates were investigated by transmittance and reflectance spectroscopy in the ultraviolet, visible and near infrared range. A numerical analysis method that takes into account the different surface roughness of the polycrystalline and amorphous films was applied to calculate the optical constants (refractive index and absorption coefficient). Amorphous films were found to have a higher refractive index and a lower transparency than polycrystalline films. This is attributed to a higher density of the amorphous samples, which was confirmed by atomic density measurements performed by heavy-ion elastic recoil detection analysis. The absorption coefficient gave an excellent fit to the Tauc law (indirect gap), which allowed a band gap value of 5.54 eV to be obtained. The structure of the films (amorphous or polycrystalline) was found to have no significant influence on the nature of the band gap. The Tauc plots also give information about the structure of the films, because the slope of the plot (the Tauc parameter) is related to the degree of order in the bond network. The amorphous samples had a larger value of the Tauc parameter, i.e. more order than the polycrystalline samples. This is indicative of a uniform bond network with percolation of the bond chains, in contrast to the randomly oriented polycrystalline grains separated by grain boundaries.

  3. Poly(lactide-co-trimethylene carbonate) and polylactide/polytrimethylene carbonate blown films.

    Science.gov (United States)

    Li, Hongli; Chang, Jiangping; Qin, Yuyue; Wu, Yan; Yuan, Minglong; Zhang, Yingjie

    2014-01-01

    In this work, poly(lactide-co-trimethylene carbonate) and polylactide/ polytrimethylene carbonate films are prepared using a film blowing method. The process parameters, including temperature and screw speed, are studied, and the structures and properties of the P(LA-TMC) and PLA/PTMC films are investigated. The scanning electron microscope (SEM) images show that upon improving the content of TMC and PTMC, the lamellar structures of the films are obviously changed. With increasing TMC monomer or PTMC contents, the elongation at the break is improved, and the maximum is up to 525%. The water vapor permeability (WVP) results demonstrate that the WVP of the PLA/PTMC film increased with the increase in the PTMC content, whereas the WVP of the P(LA-TMC) film decreased. Thermogravimetric (TG) measurements reveal that the decomposition temperatures of the P(LA-TMC) and PLA/PTMC films decrease with increases in the TMC and PTMC contents, respectively, but the processing temperature is significantly lower than the initial decomposition temperature. P(LA-TMC) or PLA/PTMC film can extend the shelf life of apples, for instance, like commercial LDPE film used in fruit packaging in supermarkets. PMID:24534806

  4. Selective synthesis of double helices of carbon nanotube bundles grown on treated metallic substrates

    Energy Technology Data Exchange (ETDEWEB)

    Cervantes-Sodi, Felipe; Iniguez-Rabago, Agustin; Rosas-Melendez, Samuel; Ballesteros-Villarreal, Monica [Departamento de Fisica y Matematicas, Universidad Iberoamericana, Prolongacion Paseo de la Reforma 880, Lomas de Santa Fe (Mexico); Vilatela, Juan J. [IMDEA Materials Institute, E.T.S. de Ingenieros de Caminos, Madrid (Spain); Reyes-Gutierrez, Lucio G.; Jimenez-Rodriguez, Jose A. [Ingenieria Industrial, Grupo JUMEX, Ecatepec de Morelos, Estado de Mexico (Mexico); Palacios, Eduardo [Lab. de Microscopia Electronica de Ultra Alta Resolucion, Instituto Mexicano del Petroleo, San Bartolo Atepehuacan (Mexico); Terrones, Mauricio [Department of Physics, Department of Materials Science and Engineering and Materials Research Institute, Pennsylvania State University, University Park, PA (United States); Research Center for Exotic Nanocarbons (JST), Shinshu University, Nagano (Japan)

    2012-12-15

    Double-helix microstructures consisting of two parallel strands of hundreds of multi-walled carbon nanotubes (MWCNTs) have been synthesized by chemical vapour deposition of ferrocene/toluene vapours on metal substrates. Growth of coiled carbon nanostructures with site selectivity is achieved by varying the duration of thermochemical pretreatment to deposit a layer of SiO{sub x} on the metallic substrate. Production of multibranched structures of MWCNTs converging in SiO{sub x} microstructure is also reported. In the abstract figure, panel (a) shows a coloured micrograph of a typical double-helix coiled microstructure of MWCNTs grown on SiO{sub x} covered steel substrate. Green and blue show each of the two individual strands of MWCNTs. Panel (b) is an amplification of a SiO{sub x} microparticle (white) on the tip of the double-stranded coil (green and blue). The microparticle guides the collective growth of hundreds of MWCNTs to form the coiled structure. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  5. Spectroscopic and microscopic studies of self-assembled nc-Si/a-SiC thin films grown by low pressure high density spontaneous plasma processing.

    Science.gov (United States)

    Das, Debajyoti; Kar, Debjit

    2014-12-14

    In view of suitable applications in the window layer of nc-Si p-i-n solar cells in superstrate configuration, the growth of nc-Si/a-SiC composite films was studied, considering the trade-off relation between individual characteristics of its a-SiC component to provide a wide optical-gap and electrically conducting nc-Si component to simultaneously retain enough crystalline linkages to facilitate proper crystallization to the i-nc-Si absorber-layer during its subsequent growth. Self-assembled nc-Si/a-SiC thin films were spontaneously grown by low-pressure planar inductively coupled plasma CVD, operating in electromagnetic mode, providing high atomic-H density. Spectroscopic simulations of ellipsometry and Raman data, and systematic chemical and structural analysis by XPS, TEM, SEM and AFM were performed. Corresponding to optimized inclusion of C essentially incorporated as Si-C bonds in the network, the optical-gap of the a-SiC component widened, void fraction including the incubation layer thickness reduced. While the bulk crystallinity decreased only marginally, Si-ncs diminished in size with narrower distribution and increased number density. With enhanced C-incorporation, formation of C-C bonds in abundance deteriorates the Si continuous bonding network and persuades growth of an amorphous dominated silicon-carbon heterostructure containing high-density tiny Si-ncs. Stimulated nanocrystallization identified in the Si-network, induced by a limited amount of carbon incorporation, makes the material most suitable for applications in nc-Si solar cells. The novelty of the present work is to enable spontaneous growth of self-assembled superior quality nc-Si/a-SiC thin films and simultaneous spectroscopic simulation-based optimization of properties for utilization in devices. PMID:25342429

  6. Synthesis and properties of ZnS-EuS films grown from volatile complex compounds

    Energy Technology Data Exchange (ETDEWEB)

    Bessergenev, V.G.; Ivanova, E.N.; Kovalevskaya, Y.A. [Siberian Branch of Russian Academy of Sciences, Novosibirsk (Russian Federation). Inst. of Inorganic Chemistry

    1997-10-01

    Deposition and characterization of films of ZnS, EuS and ZnS:Eu are described. The films have been prepared by chemical vapor deposition using new volatile complex compounds, dithiocarbamates of Zn and Eu, as precursors. Characterization includes X-ray diffraction, chemical analysis of the film composition, Raman spectroscopy, ellipsometry, and spectrophotometry. The spatial chemical homogeneity of the films has been determined using a recently developed method of differential dissolution and found to be uniform. Doping of ZnS by Eu with dopant concentration up to 0.3 at.% has been achieved. Effects of Eu doping on structural and optical properties of the films are presented.

  7. Special Polymer/Carbon Composite Films for Detecting SO2

    Science.gov (United States)

    Homer, Margie; Ryan, Margaret; Yen, Shiao-Pin; Kisor, Adam; Jewell, April; Shevade, Abhijit; Manatt, Kenneth; Taylor, Charles; Blanco, Mario; Goddard, William

    2008-01-01

    A family of polymer/carbon films has been developed for use as sensory films in electronic noses for detecting SO2 gas at concentrations as low as 1 part per million (ppm). Most previously reported SO2 sensors cannot detect SO2 at concentrations below tens of ppm; only a few can detect SO2 at 1 ppm. Most of the sensory materials used in those sensors (especially inorganic ones that include solid oxide electrolytes, metal oxides, and cadmium sulfide) must be used under relatively harsh conditions that include operation and regeneration at temperatures greater than 100 C. In contrast, the present films can be used to detect 1 ppm of SO2 at typical opening temperatures between 28 and 32 C and can be regenerated at temperatures between 36 and 40 C. The basic concept of making sensing films from polymer/carbon composites is not new. The novelty of the present family of polymer/carbon composites lies in formulating the polymer components of these composites specifically to optimize their properties for detecting SO2. First-principles quantum-mechanical calculations of the energies of binding of SO2 molecules to various polymer functionalities are used as a guide for selecting polymers and understanding the role of polymer functionalities in sensing. The polymer used in the polymer-carbon composite is a copolymer of styrene derivative units with vinyl pyridine or substituted vinyl pyridine derivative units. To make a substituted vinyl pyridine for use in synthesizing such a polymer, poly(2-vinyl pyridine) that has been dissolved in methanol is reacted with 3-chloropropylamine that has been dissolved in a solution of methanol. The methanol is then removed to obtain the copolymer. Later, the copolymer can be dissolved in an appropriate solvent with a suspension of carbon black to obtain a mixture that can be cast and then dried to obtain a sensory film.

  8. Magnetotransport in MBE-grown topological insulator (Bi1-xSbx)2Te3 thin films

    International Nuclear Information System (INIS)

    We report on the magnetotransport study of topological insulator (Bi1-xSbx)2Te3 thin films. The films were grown on a silicon on insulator (SOI) substrate with a Si(111)-layer on top by molecular beam epitaxy. In Bi2Te3 samples, we observed a positive magnetoresistance at low magnetic fields with a cusplike minimum at B=0 (weak antilocalization) as well as positive magnetoresistance in the entire magnetic field range (up to 12 T). The weak antilocalization effect disappears when an in-plane field is applied, showing the anisotropy between the transport parallel and perpendicular to the quintuple-layers. The estimated phase coherent lengths up to 250 nm at low temperatures are comparable to those previously obtained for Bi2Te3. The magnetotransport measurements were also performed on MBE-grown films of Sb2Te3 (p-doped) as well as on the ternary compound (Bi1-xSbx)2Te3 (0< x<1). A transition from n- to p-doping depending on x has been seen in the measurements.

  9. The carbonization of thin polyaniline films

    Czech Academy of Sciences Publication Activity Database

    Morávková, Zuzana; Trchová, Miroslava; Exnerová, Milena; Stejskal, Jaroslav

    2012-01-01

    Roč. 520, č. 19 (2012), s. 6088-6094. ISSN 0040-6090 R&D Projects: GA AV ČR IAA400500905; GA AV ČR IAA100500902; GA ČR GAP205/12/0911 Institutional research plan: CEZ:AV0Z40500505 Institutional support: RVO:61389013 Keywords : polyaniline * thin films * infrared spectroscopy Subject RIV: CD - Macromolecular Chemistry Impact factor: 1.604, year: 2012

  10. Modified carbon nanoparticle-chitosan film electrodes: Physisorption versus chemisorption

    Energy Technology Data Exchange (ETDEWEB)

    Rassaei, Liza; Sillanpaeae, Mika [Laboratory of Applied Environmental Chemistry, Department of Environmental Sciences, University of Kuopio, Patteristonkatu 1, 50101 Mikkeli (Finland); Marken, Frank [Department of Chemistry, University of Bath, Bath BA2 7AY (United Kingdom)

    2008-08-01

    Surface functionalised carbon nanoparticles of ca. 8 nm diameter co-assemble with chitosan into stable thin film electrodes at glassy carbon surfaces. Robust electrodes for application in sensing or electrocatalysis are obtained in a simple solvent evaporation process. The ratio of chitosan binder backbone to carbon nanoparticle conductor determines the properties of the resulting films. Chitosan (a poly-D-glucosamine) has a dual effect (i) as the binder for the mesoporous carbon composite structure and (ii) as binding site for redox active probes. Physisorption due to the positively charged ammonium group (pK{sub A} {approx} 6.5) occurs, for example, with anionic indigo carmine (a reversible 2e{sup -}-2H{sup +} reduction system in aqueous media). Chemisorption at the amine functionalities is demonstrated with 2-bromo-methyl-anthraquinone in acetonitrile (resulting in a reversible 2e{sup -}-2H{sup +} anthraquinone reduction system in aqueous media). Redox processes within the carbon nanoparticle-chitosan films are studied and at sufficiently high scan rates diffusion of protons (buffer concentration depended) is shown to be rate limiting. The chemisorption process provides a much more stable interfacial redox system with a characteristic and stable pH response over a pH 2-12 range. Chemisorption and physisorption can be employed simultaneously in a complementary binding process. (author)

  11. Carbon isotope discrimination is positively correlated with grain yield and dry matter production in field-grown wheat

    International Nuclear Information System (INIS)

    Carbon isotope discrimination (Δ) is a measure of the ratio of the intercellular and atmospheric partial pressures of CO2. Variation in Δ within some C3 species, including wheat (Triticum aestivum L.), has recently been correlated with variation in water use efficiency of droughted plants grown in the glasshouse. The objectives of this study were to assess genotypic variation in a larger group of wheat genotypes grown at three locations, and to determine the relationship between yield of field-grown plants and Δ when water was not a limitation to growth. Twenty-four bread wheat genotypes, one durum (Triticum turgidum L. durum), and two triticale genotypes (x Triticosecale rimpaui Wittm.) were grown in replicated plots at two locations in southern New South Wales, Australia, in 1984. The growing season had above average rainfall, especially in the period preceding antbesis. Carbon isotope discrimination was measured on stem material for each plot. Final aboveground biological yield and grain yield were also measured. There was substantial genotypic variation in Δ. Genotypic ranking for Δ was consistent across field sites and between field-grown plants and plants grown in pots at another location. A potential source of variation in Δ is variation in stomatal conductance. For pot-grown plants, the relationship between Δ and total leaf conductance was poor. However, Δ and conductance of the abaxial leaf surface were positively correlated. Under field conditions of nonlimiting water, biological yield and grain yield were both positively correlated with Δ. This latter result indicates that carbon isotope discrimination may be used to select for increased yield in wheat. (author)

  12. Strength and Fracture Resistance of Amorphous Diamond-Like Carbon Films for MEMS

    Directory of Open Access Journals (Sweden)

    K. N. Jonnalagadda

    2009-01-01

    Full Text Available The mechanical strength and mixed mode I/II fracture toughness of hydrogen-free tetrahedral amorphous diamond-like carbon (ta-C films, grown by pulsed laser deposition, are discussed in connection to material flaws and its microstructure. The failure properties of ta-C were obtained from films with thicknesses 0.5–3 μm and specimen widths 10–20 μm. The smallest test samples with 10 μm gage section averaged a strength of 7.3 ± 1.2 GPa, while the strength of 20-μm specimens with thicknesses 0.5–3 μm varied between 2.2–5.7 GPa. The scaling of the mechanical strength with specimen thickness and dimensions was owed to deposition-induced surface flaws, and, only in the smallest specimens, RIE patterning generated specimen sidewall flaws. The mode I fracture toughness of ta-C films is KIc=4.4±0.4 MPam, while the results from mixed mode I/II fracture experiments with cracks arbitrarily oriented in the plane of the film compared very well with theoretical predictions.

  13. Characterization of thick GaN films directly grown on wet-etching patterned sapphire by HVPE

    International Nuclear Information System (INIS)

    Thick GaN films of high quality are directly grown on wet-etching patterned sapphire in a vertical hydride vapour phase epitaxy reactor. The optical and structural properties of GaN films are studied using scanning electronic microscopy and cathodoluminescence. Test results show that initial growth of hydride vapour phase epitaxy GaN occurs not only on the mesas but also on the two asymmetric sidewalls of the V-shaped grooves without selectivity. After the two-step coalescence near the interface, the GaN films near the surface keep on growing along the direction perpendicular to the long sidewall. Based on Raman results, GaN of the coalescence region in the grooves has the maximum residual stress and poor crystalline quality over the whole GaN film, and the coalescence process can release the stress. Therefore, stress-free thick GaN films are prepared with smooth and crack-free surfaces by this particular growth mode on wet-etching patterned sapphire substrates. (authors)

  14. Characterization of Thick GaN Films Directly Grown on Wet-Etching Patterned Sapphire by HVPE

    International Nuclear Information System (INIS)

    Thick GaN films of high quality are directly grown on wet-etching patterned sapphire in a vertical hydride vapour phase epitaxy reactor. The optical and structural properties of GaN films are studied using scanning electronic microscopy and cathodoluminescence. Test results show that initial growth of hydride vapour phase epitaxy GaN occurs not only on the mesas but also on the two asymmetric sidewalls of the V-shaped grooves without selectivity. After the two-step coalescence near the interface, the GaN films near the surface keep on growing along the direction perpendicular to the long sidewall. Based on Raman results, GaN of the coalescence region in the grooves has the maximum residual stress and poor crystalline quality over the whole GaN film, and the coalescence process can release the stress. Therefore, stress-free thick GaN films are prepared with smooth and crack-free surfaces by this particular growth mode on wet-etching patterned sapphire substrates

  15. Electrical, optical, and structural properties of InZnSnO electrode films grown by unbalanced radio frequency magnetron sputtering

    International Nuclear Information System (INIS)

    We have investigated the electrical, optical, structural, and annealing properties of indium zinc tin oxide (IZTO) films prepared by an unbalanced radio frequency (RF) magnetron sputtering at room temperature, in a pure Ar ambient environment. It was found that the electrical and optical properties of unbalanced RF sputter grown IZTO films at room temperature were influenced by RF power and working pressure. At optimized growth condition, we could obtain the IZTO film with the low resistivity of 3.77 x 10-4 Ω cm, high transparency of ∼ 87% and figure of merit value of 21.2 x 10-3Ω-1, without the post annealing process, even though it was completely an amorphous structure due to low substrate temperature. In addition, the field emission scanning electron microscope analysis results showed that all IZTO films are amorphous structures with very smooth surfaces regardless of the RF power and working pressure. However, the rapid thermal annealing process above the temperature of 400 oC lead to an abrupt increase in resistivity and sheet resistance due to the transition of film structure from amorphous to crystalline, which was confirmed by X-ray diffraction examination.

  16. Structural properties of strained YBa2Cu3O6+x superconducting films grown by pulsed laser deposition

    Science.gov (United States)

    Ariosa, Daniel; Abrecht, M.; Pavuna, Davor; Onellion, Marshall

    2000-09-01

    In YBa2Cu3O6+x compound the tetragonal to orthorhombic transition occurs around x equals 0.3, followed by a continuum variation of lattice parameters. Hence both, the structural and superconducting properties, depend upon the oxygen content in CuO chains. Conversely, the epitaxial stress, exerted by the substrate on YBCO films, modified the lattice parameters influencing the oxygen stability in the chains. The understanding of this mechanism is essential when growing epitaxial films for in- situ photoemission studies as well as for tunneling experiments, since the oxygen stability up to the top surface unit-cell is a central issue. We have studied this effect on c-axis oriented YBCO films grown by laser ablation on (001) STO single crystals. Accurate x-ray diffraction analysis of thick films (t GRT 500 angstrom) indicates the presence of two distinct layers, one strained and the other relaxed. Detailed analysis shows that the relaxed layer is as well oxidized as bulk samples, while the strained one is oxygen deficient. Furthermore, despite an oxygen content of about x equals 0.65, the strained layer is in the tetragonal phase (in bulk, the tetragonal phase exists for x < 0.3). We discuss these results in terms of competition between the chemical pressure induced by oxygen inclusion in the chains, and the uniaxial stress within the film.

  17. Production and characterization of Nd,Cr:GSGG thin films on Si(001) grown by pulsed laser ablation

    Science.gov (United States)

    Willmott, P. R.; Manoravi, P.; Holliday, K.

    Nd,Cr:Gd3Sc2Ga3O12 (GSGG) thin films have been produced for the first time. They were grown on Si(001) substrates at 650 °C by pulsed laser ablation at 248 nm of a crystalline Nd,Cr:GSGG target rod. The laser plume was analyzed using time-of-flight quadrupole mass spectroscopy, and consisted of elemental and metal oxide fragments with kinetic energies typically in the range 10 to 40 eV, though extending up to 100 eV. Although films deposited in vacuum using laser fluences of 0.8+/-0.1 Jcm-2 reproduced the Nd,Cr:GSGG bulk stoichiometry, those deposited using fluences above 3 Jcm-2 resulted in noncongruent material transfer and were deficient in Ga and Cr. Attempts to grow films using synchronized oxygen or oxygen/argon pulses yielded mixed oxide phases. Under optimal growth conditions, the films were heteroepitaxial, with GSGG(001)[100]∥Si(001)[100], and exhibited Volmer-Weber-type growth. Room-temperature emission spectra of the films suggest efficient non-radiative energy transfer between Cr3+ and Nd3+ ions, similar to that of the bulk crystal.

  18. Effects of growth temperature on the properties of HfO2 films grown by atomic layer deposition

    International Nuclear Information System (INIS)

    A relatively high dielectric constant (κ=20-25), wide band gap and conduction band offset (6.0 eV and 1.5 eV, respectively), and good thermal stability upon contact with silicon indicate hafnium dioxide as one of the most promising candidates to substitute silicon dioxide as dielectric gate in complementary metal-oxide-semiconductor devices. To investigate the properties of thin films suitable for application in microelectronics, HfO2 films were grown by atomic layer deposition. Hafnium tetrachloride (HfCl4) and water (H2O) were used as precursors. Film structural, morphological, and compositional properties were then investigated focusing on their dependence on growth temperature in the range between 150 degrees C and 350 degrees C. A modification of the film structure with growth temperature is expected because the density of the reactive OH sites is known to decrease with increasing temperature. The extent and consequences of these modifications were investigated using X-ray diffraction and reflectivity, and atomic force microscopy. Time of flight-secondary ion mass spectrometry was used to study film composition. (author)

  19. Structural, morphological, and optoelectrical characterization of Bi2S3 thin films grown by co-evaporation

    Science.gov (United States)

    Mesa, F.; Arredondo, C. A.; Vallejo, W.

    2016-03-01

    This work presents the results of synthesis and characterization of polycrystalline n-type Bi2S3 thin films. The films were grown through a chemical reaction from co-evaporation of their precursor elements in a soda-lime glass substrate. The effect of the experimental conditions on the optical, morphological structural properties, the growth rate, and the electrical conductivity (σ) was studied through spectral transmittance, X-ray diffraction (XRD), atomic force microscopy (AFM) and σ versus T measurements, respectively. The results showed that the films grow only in the orthorhombic Bi2S3 bismuthinite phase. It was also found that the Bi2S3 films present an energy band gap (Eg) of about 1.38 eV. In addition to these results, the electrical conductivity of the Bi2S3 films was affected by both the transport of free carriers in extended states of the conduction band and for variable range hopping transport mechanisms, each one predominating in a different temperature range.

  20. Spectroscopic and magnetic properties of Mn doped GaN epitaxial films grown by plasma assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    Graphical abstract: We report here that micro-Raman scattering spectrum for Mn doped GaN thin film has displayed a new peak manifested at 578 cm−1, by which it is attributed to interior LVM originated by the incorporation of Mn ions in place of Ga sites. Mn doped GaN thin film also showed the typical negative magnetoresistance up to ∼50 K, revealing that the film showed magnetic ordering of spins below 50 K. Display Omitted Highlights: ► GaN and Mn doped GaN single phase wurtzite structures grown by PAMBE. ► The phase purity of the epilayers investigated by HRXRD, HRSEM and EDX. ► The red shift in near band edge emission has been observed using micro-PL. ► A new peak related LVM at 578 cm−1 in micro-Raman scattering measurements confirmed Mn doped into GaN. ► Negative-magnetoresistance investigations have showed that the film has Tc −1, which is attributed to the vacancy-related local vibrational mode of Mn occupying the Ga site. Temperature dependent negative magnetoresistance measurements provide a direct evidence of magnetic ordering below 50 K for the Mn doped GaN thin film.