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Sample records for carbon films grown

  1. Ultrafast carrier dynamics in purified and as-grown single-walled carbon nanotube films

    Institute of Scientific and Technical Information of China (English)

    Long Yong-Bing; Song Li; Zhang Chun-Yu; Wang Li; Fu Pan-Ming; Zhang Zhi-Guo; Xie Si-Shen; Wang Guo-Ping

    2005-01-01

    Ultrafast time-resolved optical transmissions in purified and as-grown single-walled carbon nanotube films are measured at a temperature of 200K. The signal of the purified sample shows a crossover from photobleaching to photoabsorption. The former and the latter are interpreted as the state filling and the red shift of the π-plasmon,respectively. The signal of the as-grown sample can be perfectly fitted by a single-exponential with a time constant of 232fs. The disappearance of the negative component in the as-grown sample is attributed to the charge transfer between the semiconducting nanotubes and the impurities.

  2. Nanostructured Diamond-Like Carbon Films Grown by Off-Axis Pulsed Laser Deposition

    Directory of Open Access Journals (Sweden)

    Seong Shan Yap

    2015-01-01

    Full Text Available Nanostructured diamond-like carbon (DLC films instead of the ultrasmooth film were obtained by pulsed laser ablation of pyrolytic graphite. Deposition was performed at room temperature in vacuum with substrates placed at off-axis position. The configuration utilized high density plasma plume arriving at low effective angle for the formation of nanostructured DLC. Nanostructures with maximum size of 50 nm were deposited as compared to the ultrasmooth DLC films obtained in a conventional deposition. The Raman spectra of the films confirmed that the films were diamond-like/amorphous in nature. Although grown at an angle, ion energy of >35 eV was obtained at the off-axis position. This was proposed to be responsible for subplantation growth of sp3 hybridized carbon. The condensation of energetic clusters and oblique angle deposition correspondingly gave rise to the formation of nanostructured DLC in this study.

  3. Electron emission studies of CNTs grown on Ti and Ni containing amorphous carbon nanocomposite films

    International Nuclear Information System (INIS)

    Carbon nanotubes (CNTs) were grown successfully on the as-deposited dual metal (Ti and Ni) embedded films using a radio frequency plasma-enhanced chemical vapor deposition system. The microstructure of CNTs grown on the dual metal films proved to be heavily dependent on the percentages of metals included, varying both in size and in density. Electron emission tests carried out on the films with CNTs grown showed that the threshold field was dependent on the surface morphology of the CNTs, with the lowest threshold field at 3.5 V/μm from 2.5% Ti/Ni film with CNTs. The field enhancement factor, β, of the emitting tips was also calculated from the Fowler-Nordheim plots, where CNTs from the 2.5% Ti/Ni film gave the highest field enhancement factor. However, it was observed that films with a single metal of either Ti or Ni did not manage to grow CNTs, possibly due to a lack of catalyst centres at the surface of the films. It was believed that the Ni nanoclusters acted as catalysts centres giving a rather uniform but randomly orientated type of CNTs. Results obtained pointed that the fabricated nanocomposite material could be a possible choice for cold cathode emitters and the Ti/Ni mixture could be an effective composite for controlling the CNT density.

  4. Raman shift on n-doped amorphous carbon thin films grown by electron beam evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Rebollo P., B. [Departamento de Fisica, Pontificia Universidad Catolica de Rio de Janeiro (Brazil); Facultad de Ciencias Fisico-Matematicas, Benemerita Universidad Autonoma de Puebla (Mexico); Freire L., F. Jr. [Departamento de Fisica, Pontificia Universidad Catolica de Rio de Janeiro (Brazil); Lozada M., R.; Palomino M., R. [Facultad de Ciencias Fisico-Matematicas, Benemerita Universidad Autonoma de Puebla (Mexico); Jimenez S., S. [Centro de Investigacion y de Estudios Avanzados del IPN, Laboratorio de Investigacion en Materiales, Queretaro (Mexico); Zelaya A., O. [Centro de Investigacion y de Estudios Avanzados del IPN, Departamento de Fisica, CINVESTAV-IPN, P.O. Box 14-740, Mexico 07360 D.F. (Mexico)

    2007-04-15

    The structural properties of carbon thin films synthesized under an atmosphere of nitrogen by means of electron beam evaporation were studied by Raman scattering spectroscopy. The electron beam evaporation technique is an important alternative to grown layers of this material with interesting structural properties. The observed shift of the Raman G band shows that the structure of the films tends to become more graphitic upon the increase of the deposition time. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  5. Amorphous Interface Layer in Thin Graphite Films Grown on the Carbon Face of SiC

    Energy Technology Data Exchange (ETDEWEB)

    Colby, R.; Stach, E.; Bolen, M.L.; Capano, M.A.

    2011-09-05

    Cross-sectional transmission electron microscopy (TEM) is used to characterize an amorphous layer observed at the interface in graphite and graphene films grown via thermal decomposition of C-face 4H-SiC. The amorphous layer does not cover the entire interface, but uniform contiguous regions span microns of cross-sectional interface. Scanning transmission electron microscopy (STEM) images and electron energy loss spectroscopy (EELS) demonstrate that the amorphous layer is a carbon-rich composition of Si/C. The amorphous layer is clearly observed in samples grown at 1600 C for a range of growth pressures in argon, but not at 1500 C, suggesting a temperature-dependent formation mechanism.

  6. Effect of acetylene flow rate on morphology and structure of carbon nanotube thick films grown by thermal chemical vapor deposition

    Institute of Scientific and Technical Information of China (English)

    CAO Zhangyi; SUN Zhuo; GUO Pingsheng; CHEN Yiwei

    2007-01-01

    Carbon nanotube (CNT) films were grown on nickel foil substrates by thermal chemical vapor deposition (CVD) with acetylene and hydrogen as the precursors. The morphology and structure of CNTs depending on the acetylene flow rate were characterized by a scanning electron microscope (SEM),a transmission electron microscope (TEM) and a Raman spectrometer,respectively.The effect of acetylene flow rate on the morphology and structure of CNT films was investigated.By increasing the acetylene flow rate from 10 to 90 sccm (standard cubic centimeter perminute),the yield and the diameter of CNTs increase.Also, the defects and amorphous phase in CNT films increase with increasing acetylene flow rate.

  7. Immobilization of carbon nanotubes on functionalized graphene film grown by chemical vapor deposition and characterization of the hybrid material

    International Nuclear Information System (INIS)

    We report the surface functionalization of graphene films grown by chemical vapor deposition and fabrication of a hybrid material combining multi-walled carbon nanotubes and graphene (CNT–G). Amine-terminated self-assembled monolayers were prepared on graphene by the UV-modification of oxidized groups introduced onto the film surface. Amine-termination led to effective interaction with functionalized CNTs to assemble a CNT–G hybrid through covalent bonding. Characterization clearly showed no defects of the graphene film after the immobilization reaction with CNT. In addition, the hybrid graphene material revealed a distinctive CNT–G structure and p–n type electrical properties. The introduction of functional groups on the graphene film surface and fabrication of CNT–G hybrids with the present technique could provide an efficient, novel route to device fabrication. (paper)

  8. Enzyme biosensor based on plasma-polymerized film-covered carbon nanotube layer grown directly on a flat substrate.

    Science.gov (United States)

    Muguruma, Hitoshi; Hoshino, Tatsuya; Matsui, Yasunori

    2011-07-01

    We report a novel approach to fabrication of an amperometric biosensor with an enzyme, a plasma-polymerized film (PPF), and carbon nanotubes (CNTs). The CNTs were grown directly on an island-patterned Co/Ti/Cr layer on a glass substrate by microwave plasma enhanced chemical vapor deposition. The as-grown CNTs were subsequently treated by nitrogen plasma, which changed the surface from hydrophobic to hydrophilic in order to obtain an electrochemical contact between the CNTs and enzymes. A glucose oxidase (GOx) enzyme was then adsorbed onto the CNT surface and directly treated with acetonitrile plasma to overcoat the GOx layer with a PPF. This fabrication process provides a robust design of CNT-based enzyme biosensor, because of all processes are dry except the procedure for enzyme immobilization. The main novelty of the present methodology lies in the PPF and/or plasma processes. The optimized glucose biosensor revealed a high sensitivity of 38 μA mM(-1) cm(-2), a broad linear dynamic range of 0.25-19 mM (correlation coefficient of 0.994), selectivity toward an interferent (ascorbic acid), and a fast response time of 7 s. The background current was much smaller in magnitude than the current due to 10 mM glucose response. The low limit of detection was 34 μM (S/N = 3). All results strongly suggest that a plasma-polymerized process can provide a new platform for CNT-based biosensor design. PMID:21678995

  9. Effect of nitrogen pressure on optical properties and microstructure of diamond-like carbon films grown by pulsed laser deposition

    Institute of Scientific and Technical Information of China (English)

    DING Xu-Li; LI Qing-Shan; KONG Xiang-he

    2009-01-01

    The effect of nitrogen pressure on optical properties of hydrogen-free diamond-like carbon (DLC) films deposited by pulsed laser ablation graphite in different background pressures of nitrogen is reported. By varying nitrogen pressures from 0.05 to 15.00 Pa, the photoluminescence is gradually increased and optical transmittance is gradually decreased. Atomic force microscopy (AFM) is used to observe the surface morphology of the DLC films. The results indicate that the surface becomes unsmoothed and there are some globose particles on the films surface with the rise of nitrogen pressures. The microstructure of the films is characterized using Raman spectroscopy.

  10. Enhanced field emission characteristics of nitrogen-doped carbon nanotube films grown by microwave plasma enhanced chemical vapor deposition process

    International Nuclear Information System (INIS)

    Nitrogen-doped carbon nanotube (CNT) films have been synthesized by simple microwave plasma enhanced chemical vapor deposition technique. The morphology and structures were investigated by scanning electron microscopy and high resolution transmission electron microscopy. Morphology of the films was found to be greatly affected by the nature of the substrates. Vertically aligned CNTs were observed on mirror polished Si substrates. On the other hand, randomly oriented flower like morphology of CNTs was found on mechanically polished ones. All the CNTs were found to have bamboo structure with very sharp tips. These films showed very good field emission characteristics with threshold field in the range of 2.65-3.55 V/μm. CNT film with flower like morphology showed lower threshold field as compared to vertically aligned structures. Open graphite edges on the side surface of the bamboo-shaped CNT are suggested to enhance the field emission characteristics which may act as additional emission sites

  11. Role of surface-electrical properties on the cell-viability of carbon thin films grown in nanodomain morphology

    Science.gov (United States)

    Javid, Amjed; Kumar, Manish; Yoon, Seokyoung; Lee, Jung Heon; Tajima, Satomi; Hori, Masaru; Geon Han, Jeon

    2016-07-01

    Carbon thin films, having a combination of unique physical and chemical properties, exhibit an interesting biocompatibility and biological response to living entities. Here, the carbon films are developed in the morphology form of nano-domains with nanoscale inter-domain separations, tuned by plasma conditions in the facing target magnetron sputtering process. The wettability and surface energy are found to have a close relation to the inter-domain separations. The chemical structure of carbon films exhibited the relative enhancement of sp3 in comparison to sp2 with the increase of domain separations. The cell-viability of these films shows promising results for L929 mouse fibroblast and Saos-2 bone cells, when inter-domain separation is increased. Electrical conductivity and surface energy are identified to play the key role in different time-scales during the cell-proliferation process. The contribution from electrical conductivity is dominant in the beginning of the cultivation, whereas with the passage of time (~3–5 d) the surface energy takes control over conductivity to enhance the cell proliferation.

  12. Stress relief patterns of hydrogenated amorphous carbon films grown by dc-pulse plasma chemical vapor deposition

    Science.gov (United States)

    Wang, Qi; Wang, Chengbing; Wang, Zhou; Zhang, Junyan; He, Deyan

    2008-12-01

    Hydrogenated amorphous carbon films were prepared on Si (1 0 0) substrates by dc-pulse plasma chemical vapor deposition. The nature of the deposited films was characterized by Raman spectra and the stress relief patterns were observed by scanning electron microscope. Besides the well-known sinusoidal type and flower type patterns, etc., two different stress relief patterns, ring type and peg-top shape with exiguous tine on the top, were observed. The ring type in this paper was a clear ridge-cracked buckle and unusual. Two competing buckle delamination morphologies ring and sinusoidal buckling coexist. The ridge-cracked buckle in ring type was narrower than the sinusoidal buckling. Meanwhile peg-top shape with exiguous tine on the top in this paper was unusual. These different patterns supported the approach in which the stress relief forms have been analyzed using the theory of plate buckling.

  13. Pyrolyzed thin film carbon

    Science.gov (United States)

    Tai, Yu-Chong (Inventor); Liger, Matthieu (Inventor); Harder, Theodore (Inventor); Konishi, Satoshi (Inventor); Miserendino, Scott (Inventor)

    2010-01-01

    A method of making carbon thin films comprises depositing a catalyst on a substrate, depositing a hydrocarbon in contact with the catalyst and pyrolyzing the hydrocarbon. A method of controlling a carbon thin film density comprises etching a cavity into a substrate, depositing a hydrocarbon into the cavity, and pyrolyzing the hydrocarbon while in the cavity to form a carbon thin film. Controlling a carbon thin film density is achieved by changing the volume of the cavity. Methods of making carbon containing patterned structures are also provided. Carbon thin films and carbon containing patterned structures can be used in NEMS, MEMS, liquid chromatography, and sensor devices.

  14. Protolytic carbon film technology

    Energy Technology Data Exchange (ETDEWEB)

    Renschler, C.L.; White, C.A.

    1996-04-01

    This paper presents a technique for the deposition of polyacrylonitrile (PAN) on virtually any surface allowing carbon film formation with only the caveat that the substrate must withstand carbonization temperatures of at least 600 degrees centigrade. The influence of processing conditions upon the structure and properties of the carbonized film is discussed. Electrical conductivity, microstructure, and morphology control are also described.

  15. Optical properties of diamond like carbon films containing copper, grown by high power pulsed magnetron sputtering and direct current magnetron sputtering: Structure and composition effects

    International Nuclear Information System (INIS)

    In the present study chemical composition, structure and optical properties of hydrogenated diamond like carbon films containing copper (DLC:Cu films) deposited by reactive magnetron sputtering were studied. Different modes of deposition — direct current (DC) sputtering and high power pulsed magnetron sputtering (HIPIMS) as well as two configurations of the magnetron magnetic field (balanced and unbalanced) were applied. X-ray diffractometry, Raman scattering spectroscopy, energy-dispersive X-ray spectroscopy and atomic force microscopy were used to study the structure and composition of the films. It was shown that by using HIPIMS mode contamination of the cathode during the deposition of DLC:Cu films can be suppressed. In all cases oxygen atomic concentration in the films was in 5–10 at.% range and it increased with the copper atomic concentration. The highest oxygen content was observed in the films deposited employing low ion/neutral ratio balanced DC magnetron sputtering process. According to the analysis of the parameters of Raman scattering spectra, sp3/sp2 bond ratio decreased with the increase of Cu atomic concentration in the DLC films. Clear dependence of the extinction, absorbance and reflectance spectra on copper atomic concentration in the films was observed independently of the method of deposition. Surface plasmon resonance effect was observed only when Cu atomic concentration in DLC:Cu film was at least 15 at.%. The maximum of the surface plasmon resonance peak of the absorbance spectra of DLC:Cu films was in 600–700 nm range and redshifted with the increase of Cu amount. The ratio between the intensities of the plasmonic peak and hydrogenated amorphous carbon related peak at ~ 220 nm both in the extinction and absorbance spectra as well as peak to background ratio of DLC:Cu films increased linearly with Cu amount in the investigated 0–40 at.% range. Reflectance of the plasmonic DLC:Cu films was in 30–50% range that could be important in

  16. PLD-grown thin film saturable absorbers

    Energy Technology Data Exchange (ETDEWEB)

    Tellkamp, Friedjof

    2012-11-01

    The subject of this thesis is the preparation and characterization of thin films made of oxidic dielectrics which may find their application as saturable absorber in passively Q-switched lasers. The solely process applied for fabrication of the thin films was the pulsed laser deposition (PLD) which stands out against other processes by its flexibility considering the composition of the systems to be investigated. Within the scope of this thesis the applied saturable absorbers can be divided into two fundamentally different kinds of functional principles: On the one hand, saturable absorption can be achieved by ions embedded in a host medium. Most commonly applied bulk crystals are certain garnets like YAG (Y{sub 3}Al{sub 5}O{sub 12}) or the spinel forsterite (Mg{sub 2}SiO{sub 4}), in each case with chromium as dopant. Either of these media was investigated in terms of their behavior as PLD-grown saturable absorber. Moreover, experiments with Mg{sub 2}GeO{sub 4}, Ca{sub 2}GeO{sub 4}, Sc{sub 2}O{sub 3}, and further garnets like YSAG or GSGG took place. The absorption coefficients of the grown films of Cr{sup 4+}:YAG were determined by spectroscopic investigations to be one to two orders of magnitude higher compared to commercially available saturable absorbers. For the first time, passive Q-switching of a Nd:YAG laser at 1064 nm with Cr{sup 4+}:YAG thin films could be realized as well as with Cr:Sc{sub 2}O{sub 3} thin films. On the other hand, the desirable effect of saturable absorption can also be generated by quantum well structures. For this purpose, several layer system like YAG/LuAG, Cu{sub 2}O/MgO, and ZnO/corumdum were investigated. It turned out that layer systems with indium oxide (In{sub 2}O{sub 3}) did not only grew in an excellent way but also showed up a behavior regarding their photo luminescence which cannot be explained by classical considerations. The observed luminescence at roughly 3 eV (410 nm) was assumed to be of excitonic nature and its

  17. Beryllium nitride thin film grown by reactive laser ablation

    OpenAIRE

    G. Soto; Diaz, J.A.; Machorro, R.; Reyes-Serrato, A.; de la Cruz, W.

    2001-01-01

    Beryllium nitride thin films were grown on silicon substrates by laser ablating a beryllium foil in molecular nitrogen ambient. The composition and chemical state were determined with Auger (AES), X-Ray photoelectron (XPS) and energy loss (EELS) spectroscopies. A low absorption coefficient in the visible region, and an optical bandgap of 3.8 eV, determined by reflectance ellipsometry, were obtained for films grown at nitrogen pressures higher than 25 mTorr. The results show that the reaction ...

  18. Photosensitivity of nanocrystalline ZnO films grown by PLD

    Energy Technology Data Exchange (ETDEWEB)

    Ayouchi, R.; Bentes, L.; Casteleiro, C. [Departamento de Fisica, Instituto Superior Tecnico, Av. Rovisco Pais 1, P-1049-001 Lisboa (Portugal); Conde, O. [Departamento de Fisica, Faculdade de Ciencias da Universidade de Lisboa, P-1749-016 Lisboa (Portugal); Marques, C.P.; Alves, E. [Instituto Tecnologico e Nuclear, ITN, P-2686-953 Sacavem (Portugal); Moutinho, A.M.C.; Marques, H.P.; Teodoro, O. [CeFiTec, Departamento de Fisica, Universidade Nova de Lisboa, P-2829-516 Caparica (Portugal); Schwarz, R. [Departamento de Fisica, Instituto Superior Tecnico, Av. Rovisco Pais 1, P-1049-001 Lisboa (Portugal)], E-mail: rschwarz@fisica.ist.utl.pt

    2009-03-15

    We have studied the properties of ZnO thin films grown by laser ablation of ZnO targets on (0 0 0 1) sapphire (Al{sub 2}O{sub 3}), under substrate temperatures around 400 deg. C. The films were characterized by different methods including X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD) and atomic force microscopy (AFM). XPS analysis revealed that the films are oxygen deficient, and XRD analysis with {theta}-2{theta} scans and rocking curves indicate that the ZnO thin films are highly c-axis oriented. All the films are ultraviolet (UV) sensitive. Sensitivity is maximum for the films deposited at lower temperature. The films deposited at higher temperatures show crystallite sizes of typically 500 nm, a high dark current and minimum photoresponse. In all films we observe persistent photoconductivity decay. More densely packed crystallites and a faster decay in photocurrent is observed for films deposited at lower temperature.

  19. Pyrolyzed carbon film diodes.

    Science.gov (United States)

    Morton, Kirstin C; Tokuhisa, Hideo; Baker, Lane A

    2013-11-13

    We have previously reported pyrolyzed parylene C (PPC) as a conductive carbon electrode material for use with micropipets, atomic force microscopy probes, and planar electrodes. Advantages of carbon electrode fabrication from PPC include conformal coating of high-aspect ratio micro/nanoscale features and the benefits afforded by chemical vapor deposition of carbon polymers. In this work, we demonstrate chemical surface doping of PPC through the use of previously reported methods. Chemically treated PPC films are characterized by multiple spectroscopic and electronic measurements. Pyrolyzed parylene C and doped PPC are used to construct diodes that are examined as both p-n heterojunction and Schottky barrier diodes. Half-wave rectification is achieved with PPC diodes and demonstrates the applicability of PPC as a conductive and semiconductive material in device fabrication. PMID:24090451

  20. Laser patterning of vertically grown carbon nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Chang, Won Seok [Korea Institute of Machinery and Materials, Daejeon (Korea, Republic of)

    2012-12-15

    The selective patterning of a carbon nanotube (CNT) forest on a Si substrate has been performed using a femtosecond laser. The high shock wave generated by the femtosecond laser effectively removed the CNTs without damage to the Si substrate. This process has many advantages because it is performed without chemicals and can be easily applied to large area patterning. The CNTs grown by plasma enhanced chemical vapor deposition (PECVD) have a catalyst cap at the end of the nanotube owing to the tip growth mode mechanism. For the application of an electron emission and biosensor probe, the catalyst cap is usually removed chemically, which damages the surface of the CNT wall. Precise control of the femtosecond laser power and focal position could solve this problem. Furthermore, selective CNT cutting using a femtosecond laser is also possible without any phase change in the CNTs, which is usually observed in the focused ion beam irradiation of CNTs.

  1. Morphology in electrochemically grown conducting polymer films

    Science.gov (United States)

    Rubinstein, Israel; Gottesfeld, Shimshon; Sabatani, Eyal

    1992-01-01

    A conducting polymer film with an improved space filling is formed on a metal electrode surface. A self-assembling monolayer is formed directly on the metal surface where the monolayer has a first functional group that binds to the metal surface and a second chemical group that forms a chemical bonding site for molecules forming the conducting polymer. The conducting polymer is then conventioonally deposited by electrochemical deposition. In one example, a conducting film of polyaniline is formed on a gold electrode surface with an intermediate monolayer of p-aminothiophenol.

  2. InSb thin films grown by electrodeposition

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Joginder, E-mail: joginderchauhan82@gmail.com; Rajaram, P., E-mail: joginderchauhan82@gmail.com [School of Studies in Physics, Jiwaji University, Gwalior-474011 (India)

    2014-04-24

    We have grown InSb thin films on Cu substrates using the electrodeposition technique. The electrochemical bath from which the InSb thin films were grown was made up of a mixture of aqueous solutions of 0.05 M InCl{sub 3} and 0.03M SbCl{sub 3}, 0 .20M citric acid and 0.30M sodium citrate. Citric acid and sodium citrate were used as complexing agents to bring the reduction potential of In and Sb closer to maintain binary growth. The electrodeposited films were characterized by structural, morphological and optical studies. X-ray diffraction studies show that the films are polycrystalline InSb having the zinc blende structure. Scanning electron microscopy (SEM) studies reveal that the surface of the films is uniformly covered with submicron sized spherical particles. FTIR spectra of InSb thin films show a sharp absorption peak at wave number 1022 cm{sup −1} corresponding to the band gap. Hot probe analysis shows that the InSb thin films have p type conductivity.

  3. Thermally grown thin nitride films as a gate dielectric

    CERN Document Server

    Shin, H C; Hwang, T K; Lee, K R

    1998-01-01

    High-quality very thin films ( <=6 nm) of silicon nitride were thermally grown in ammonia atmosphere with an IR (Infrared) gold image furnace. As-grown nitride film was analyzed using AES(Auger Emission Spectroscopy). Using MIS (Metal-Insulator-Semiconductor) devices, the growth rate was calculated using CV (Capacitance-Voltage) measurements and various electrical characteristics were obtained using CV, IV (Current-Voltage), trapping, time-dependent breakdown, high-field stress, constant current injection stress and dielectric breakdown techniques. These characteristics showed that very thin thermal silicon nitride films can be used as gate dielectrics for future highly scaled-down ULSI (Ultra Large Scale Integrated) devices, especially for EEPROM (Electrically Erasable and Programmable ROM)'s.

  4. Nanocomposite oxide thin films grown by pulsed energy beam deposition

    Energy Technology Data Exchange (ETDEWEB)

    Nistor, M., E-mail: mnistor@infim.ro [National Institute for Lasers, Plasma and Radiation Physics, L22, P.O. Box MG-36, 77125 Bucharest-Magurele (Romania); Petitmangin, A.; Hebert, C. [INSP, Universite Pierre et Marie Curie - Paris 6, Campus Boucicaut, 140 rue de Lourmel, 75015 Paris (France); Seiler, W. [LIM, ENSAM, 151 boulevard de l' Hopital, 75013 Paris (France)

    2011-04-01

    Highly non-stoichiometric indium tin oxide (ITO) thin films were grown by pulsed energy beam deposition (pulsed laser deposition-PLD and pulsed electron beam deposition-PED) under low oxygen pressure. The analysis of the structure and electrical transport properties showed that ITO films with a large oxygen deficiency (more than 20%) are nanocomposite films with metallic (In, Sn) clusters embedded in a stoichiometric and crystalline oxide matrix. The presence of the metallic clusters induces specific transport properties, i.e. a metallic conductivity via percolation with a superconducting transition at low temperature (about 6 K) and the melting and freezing of the In-Sn clusters in the room temperature to 450 K range evidenced by large changes in resistivity and a hysteresis cycle. By controlling the oxygen deficiency and temperature during the growth, the transport and optical properties of the nanocomposite oxide films could be tuned from metallic-like to insulating and from transparent to absorbing films.

  5. Carbon Nanotube Microarrays Grown on Nanoflake Substrates

    Science.gov (United States)

    Schmidt, Howard K.; Hauge, Robert H.; Pint, Cary; Pheasant, Sean

    2013-01-01

    This innovation consists of a new composition of matter where single-walled carbon nanotubes (SWNTs) are grown in aligned arrays from nanostructured flakes that are coated in Fe catalyst. This method of growth of aligned SWNTs, which can yield well over 400 percent SWNT mass per unit substrate mass, exceeds current yields for entangled SWNT growth. In addition, processing can be performed with minimal wet etching treatments, leaving aligned SWNTs with superior properties over those that exist in entangled mats. The alignment of the nanotubes is similar to that achieved in vertically aligned nanotubes, which are called "carpets. " Because these flakes are grown in a state where they are airborne in a reactor, these flakes, after growing SWNTs, are termed "flying carpets. " These flakes are created in a roll-to-roll evaporator system, where three subsequent evaporations are performed on a 100-ft (approx. =30-m) roll of Mylar. The first layer is composed of a water-soluble "release layer, " which can be a material such as NaCl. After depositing NaCl, the second layer involves 40 nm of supporting layer material . either Al2O3 or MgO. The thickness of the layer can be tuned to synthesize flakes that are larger or smaller than those obtained with a 40-nm deposition. Finally, the third layer consists of a thin Fe catalyst layer with a thickness of 0.5 nm. The thickness of this layer ultimately determines the diameter of SWNT growth, and a layer that is too thick will result in the growth of multiwalled carbon nanotubes instead of single-wall nanotubes. However, between a thickness of 0.5 nm to 1 nm, single-walled carbon nanotubes are known to be the primary constituent. After this three-layer deposition process, the Mylar is rolled through a bath of water, which allows catalyst-coated flakes to detach from the Mylar. The flakes are then collected and dried. The method described here for making such flakes is analogous to that which is used to make birefringent ink that is

  6. Low temperature CVD growth of ultrathin carbon films

    Directory of Open Access Journals (Sweden)

    Chao Yang

    2016-05-01

    Full Text Available We demonstrate the low temperature, large area growth of ultrathin carbon films by chemical vapor deposition under atmospheric pressure on various substrates. In particularly, uniform and continuous carbon films with the thickness of 2-5 nm were successfully grown at a temperature as low as 500 oC on copper foils, as well as glass substrates coated with a 100 nm thick copper layer. The characterizations revealed that the low-temperature-grown carbon films consist on few short, curved graphene layers and thin amorphous carbon films. Particularly, the low-temperature grown samples exhibited over 90% transmittance at a wavelength range of 400-750 nm and comparable sheet resistance in contrast with the 1000oC-grown one. This low-temperature growth method may offer a facile way to directly prepare visible ultrathin carbon films on various substrate surfaces that are compatible with temperatures (500-600oC used in several device processing technologies.

  7. thin films grown with additional NaF layers

    Science.gov (United States)

    Kim, Gee Yeong; Kim, Juran; Jo, William; Son, Dae-Ho; Kim, Dae-Hwan; Kang, Jin-Kyu

    2014-10-01

    CZTS precursors [SLG/Mo (300 nm)/ZnS (460 nm)/SnS (480 nm)/Cu (240 nm)] were deposited by RF/DC sputtering, and then NaF layers (0, 15, and 30 nm) were grown by electron beam evaporation. The precursors were annealed in a furnace with Se metals at 590°C for 20 minutes. The final composition of the CZTSSe thin-films was of Cu/(Zn + Sn) ~ 0.88 and Zn/Sn ~ 1.05, with a metal S/Se ratio estimated at ~0.05. The CZTSSe thin-films have different NaF layer thicknesses in the range from 0 to 30 nm, achieving a ~3% conversion efficiency, and the CZTSSe thin-films contain ~3% of Na. Kelvin probe force microscopy was used to identify the local potential difference that varied according to the thickness of the NaF layer on the CZTSSe thin-films. The potential values at the grain boundaries were observed to increase as the NaF thickness increased. Moreover, the ratio of the positively charged GBs in the CZTSSe thin-films with an NaF layer was higher than that of pure CZTSSe thin-films. A positively charged potential was observed around the grain boundaries of the CZTSSe thin-films, which is a beneficial characteristic that can improve the performance of a device.

  8. Cathodic arc grown niobium films for RF superconducting cavity applications

    Science.gov (United States)

    Catani, L.; Cianchi, A.; Lorkiewicz, J.; Tazzari, S.; Langner, J.; Strzyzewski, P.; Sadowski, M.; Andreone, A.; Cifariello, G.; Di Gennaro, E.; Lamura, G.; Russo, R.

    2006-07-01

    Experimental results on the characterization of the linear and non-linear microwave properties of niobium film produced by UHV cathodic arc deposition are presented. Surface impedance Zs as a function of RF field and intermodulation distortion (IMD) measurement have been carried out by using a dielectrically loaded resonant cavity operating at 7 GHz. The experimental data show that these samples have a lower level of intrinsic non-linearities at low temperature and low circulating power in comparison with Nb samples grown by sputtering. These results make UHV cathodic arc deposition a promising technique for the improvement of RF superconducting cavities for particle accelerators.

  9. Cathodic arc grown niobium films for RF superconducting cavity applications

    Energy Technology Data Exchange (ETDEWEB)

    Catani, L. [INFN-Roma2, Rome (Italy); Cianchi, A. [INFN-Roma2, Rome (Italy); Lorkiewicz, J. [INFN-Roma2, Rome (Italy); Tazzari, S. [Universita di Roma ' Tor Vergata' and INFN-Roma2, Rome (Italy); Langner, J. [Soltan Institute for Nuclear Studies, Swierk (Poland); Strzyzewski, P. [Soltan Institute for Nuclear Studies, Swierk (Poland); Sadowski, M. [Soltan Institute for Nuclear Studies, Swierk (Poland); Andreone, A. [University of Napoli ' Federico II' and INFN-NA, Naples (Italy); Cifariello, G. [University of Napoli ' Federico II' and INFN-NA, Naples (Italy); Di Gennaro, E. [University of Napoli ' Federico II' and INFN-NA, Naples (Italy); Lamura, G. [University of Napoli ' Federico II' and INFN-NA, Naples (Italy); Russo, R. [Seconda Universita di Napoli, INFN-NA, Naples (Italy)

    2006-07-15

    Experimental results on the characterization of the linear and non-linear microwave properties of niobium film produced by UHV cathodic arc deposition are presented. Surface impedance Z {sub s} as a function of RF field and intermodulation distortion (IMD) measurement have been carried out by using a dielectrically loaded resonant cavity operating at 7 GHz. The experimental data show that these samples have a lower level of intrinsic non-linearities at low temperature and low circulating power in comparison with Nb samples grown by sputtering. These results make UHV cathodic arc deposition a promising technique for the improvement of RF superconducting cavities for particle accelerators.

  10. Oxygen deficiency in oxide films grown by PLD

    Energy Technology Data Exchange (ETDEWEB)

    Davila, Y., E-mail: DAVILA@insp.jussieu.fr [INSP, UMR 7188 CNRS Universite Paris VI, 140 rue de Lourmel, 75015 Paris (France); Petitmangin, A.; Hebert, C.; Perriere, J. [INSP, UMR 7188 CNRS Universite Paris VI, 140 rue de Lourmel, 75015 Paris (France); Seiler, W. [LIM, ENSAM-CNRS UMR 8006, 151 Bd de l' Hopital, 75013 Paris (France)

    2011-04-01

    The incorporation of oxygen atoms in oxide films grown by pulsed laser deposition depends upon the oxygen pressure and laser power density. By carefully controlling these two parameters it is possible to control the oxygen deficiency in the samples, and thus to change their physical properties from insulating and transparent to absorbing and conducting. By using X-ray diffraction, Rutherford backscattering spectroscopy and resistivity measurements, we show that depending upon the oxide materials oxygen deficiency in the films can induce either the growth of stable sub-oxide phases or the formation of nanocomposite films by phase separation. The first case corresponds to oxides with a mixed valency cation like Ti, which leads to the formation of stable, crystalline and highly conductive TiO{sub x} sub-oxide phases. The second case is well described by the indium tin oxides (ITO) in which a large oxygen deficiency leads to metallic clusters embedded into a stoichiometric matrix, i.e. nanocomposite films. This phenomenon is due to the fact that sub-oxides of these compounds are not stable and thus the oxygen deficiency induced a phase separation.

  11. Fabrication of Ni-B alloy coated vapor-grown carbon nanofibers by electroless deposition

    OpenAIRE

    Arai, Susumu; Imoto, Yuzo; Suzuki, Yosuke; Endo, Morinobu

    2011-01-01

    Ni-B alloy coated vapor-grown carbon nanofibers (VGCNFs) were fabricated by electroless deposition and their microstructures were investigated. The effects of heat treatment on the coated VGCNFs were also studied. VGCNFs could be coated with a homogeneous Ni-B alloy film using a plating bath containing dimethylaminoborane (DMAB) as a reducing agent. The boron content of the Ni-B alloy film could be varied from 14 to 24 atom% B by varying the DMAB concentration of the plating bath. The VGCNFs ...

  12. Doping of high quality c-BN films epitaxially grown on top of diamond(001)

    Energy Technology Data Exchange (ETDEWEB)

    Yin, Hong; Wang, Xuyang; Pongrac, Ivan; Ziemann, Paul [Institut fuer Festkoerperphysik, Universitaet Ulm (Germany); Renaux, Fabian; Hecq, Michel; Bittencourt, Carla [University of Mons-Hainaut, Mons (Belgium)

    2008-07-01

    Since it first synthesis in 1957 cubic boron nitride (c-BN) has attracted considerable interest due to its extreme physical and chemical properties. Besides as a superhard material second to diamond, it exhibits a wide band gap (6.4 eV) and high thermal conductivity making c-BN attractive as a high temperature electronic material. The recently achieved heteroepitaxial growth of c-BN films on top of diamond(001) opened a promising window for e.g. c-BN/diamond pn-junctions. We present results on the doping of high quality c-BN samples epitaxially grown on to diamond(001). XPS combined with ToF-SIMS results showed that metallic impurities within such epitaxial films are below several ppm leaving carbon and oxygen as the main impurities, which are homogeneously distributed inside the film. As a result, the nominally undoped c-BN films are p-type conducting as revealed by Hall effect. Si{sup +} was chosen to dope these epitaxial c-BN films by either in-situ adding Si{sup +} during film growth, or ex-situ doping by cold implantation and rapid thermal annealing (CIRA). In both cases, the electrical resistance of the samples is significantly decreased. Hall effect measurements indicate a related n-type conduction.

  13. Carbon nanotubes grown on bulk materials and methods for fabrication

    Science.gov (United States)

    Menchhofer, Paul A.; Montgomery, Frederick C.; Baker, Frederick S.

    2011-11-08

    Disclosed are structures formed as bulk support media having carbon nanotubes formed therewith. The bulk support media may comprise fibers or particles and the fibers or particles may be formed from such materials as quartz, carbon, or activated carbon. Metal catalyst species are formed adjacent the surfaces of the bulk support material, and carbon nanotubes are grown adjacent the surfaces of the metal catalyst species. Methods employ metal salt solutions that may comprise iron salts such as iron chloride, aluminum salts such as aluminum chloride, or nickel salts such as nickel chloride. Carbon nanotubes may be separated from the carbon-based bulk support media and the metal catalyst species by using concentrated acids to oxidize the carbon-based bulk support media and the metal catalyst species.

  14. Superconducting YBa sub 2 Cu sub 3 O sub 7 thin films grown in-situ by ion beam CO-deposition

    Energy Technology Data Exchange (ETDEWEB)

    Kellett, B.K.; James, J.H.; Gauzzi, A.; Dwir, B.; Pavuna, D. (Inst. of Micro and Optoelectronics, Dept. of Physics, Federal Inst. of Tech., Lausanne (Switzerland))

    1989-12-01

    Superconducting YBCO thin films have been grown in-situ by three ion beam co-deposition sputtering. Both metal and oxide targets of Cu and Y and BaF{sub 2} and BaCO{sub 3} targets have been investigated. Film composition was determined by RBS and AES analysis. Films grown using BaF{sub 2} show fluorine contamination, whereas the carbon concentration in films grown using BaCO{sub 3} is beneath the Auger detection limit. Superconducting films have been grown on SrTiO{sub 3} (T{sub co}=78K) and on Si with SiO{sub 2} or Y{sub 2}O{sub 3} buffer layers (T{sub co}=35K). (orig.).

  15. Structural and dielectric properties of Fe-substituted BST thin films grown by laser ablation

    International Nuclear Information System (INIS)

    BST thin films are grown by pulsed laser deposition technique at different temperatures and different oxygen deposition pressures. X-ray diffraction studies confirm the perovskite phase of the films. From the ε'-V characteristic tunability is calculated and the films grown at lower oxygen deposition pressure is found have higher tunability which is explained in terms of stress developed in the film and oxygen vacancies formed during deposition. The ε'-V variation is explained in terms of Devonshire's phenomenological theory

  16. MgB{sub 2} thin films grown on graphene/Ni–Mo alloy system

    Energy Technology Data Exchange (ETDEWEB)

    Linghu, Kehuan, E-mail: linghukehuan@126.com [School of Physics and State Key Laboratory for Artificial Structure and Mesoscopic Physics, Peking University, Beijing 100871 (China); Song, Qingjun [School of Physics and State Key Laboratory for Artificial Structure and Mesoscopic Physics, Peking University, Beijing 100871 (China); Collaborative Innovation Center of Quantum Matter, Beijing 100871 (China); Zhang, Huai [School of Physics and State Key Laboratory for Artificial Structure and Mesoscopic Physics, Peking University, Beijing 100871 (China); Yang, QianQian [College of Applied Sciences, Beijing University of Technology, Beijing 100124 (China); Zhang, Jibo; Wu, Qianhong; Nie, Ruijuan [School of Physics and State Key Laboratory for Artificial Structure and Mesoscopic Physics, Peking University, Beijing 100871 (China); Dai, Lun [School of Physics and State Key Laboratory for Artificial Structure and Mesoscopic Physics, Peking University, Beijing 100871 (China); Collaborative Innovation Center of Quantum Matter, Beijing 100871 (China); Feng, Qingrong; Wang, Furen [School of Physics and State Key Laboratory for Artificial Structure and Mesoscopic Physics, Peking University, Beijing 100871 (China)

    2015-09-15

    Highlights: • Depositing MgB{sub 2} thin films on graphene/Ni–Mo alloy substrate by HPCVD is a completely new method. • The growth of MgB{sub 2} thin films in this system lays a good foundation of depositing MgB{sub 2} thick films. • We directly deposite MgB{sub 2} films on graphene(without transferring) which keeps graphene’s original morphology and properties. - Abstract: 200 nm Ni film is coated on 25 μm thick Mo foil, and graphene is grown on the Ni–Mo system by CVD method. After the annealing process of CVD, the Ni/Mo bilayer transforms into Ni–Mo alloy, then we have successfully fabricated MgB{sub 2} films on graphene/Ni–Mo alloy system via the hybrid physical–chemical vapor deposition (HPCVD) technique. The transition temperature T{sub c} onset is 38.25 K with a corresponding transition width of 0.75 K. The average thickness of MgB{sub 2} films is 200 nm (25% concentration B{sub 2}H{sub 6}). The critical current density derives from the magnetization measurement at 5 K is, j{sub c} (5 K, 0 T) = 9.6 × 10{sup 6} A/cm{sup 2}. We can easily deposite MgB{sub 2} on graphene/Ni–Mo alloy system with a lower B{sub 2}H{sub 6} concentration and less gas flow, which lays a good foundation for depositing MgB{sub 2} thick films. The graphene in this system is multilayer and with defects, it may act like an intermediary film for the growth of MgB{sub 2}, or a carbon-doping source.

  17. Electrochemical Energy Storage Applications of CVD Grown Niobium Oxide Thin Films.

    Science.gov (United States)

    Fiz, Raquel; Appel, Linus; Gutiérrez-Pardo, Antonio; Ramírez-Rico, Joaquín; Mathur, Sanjay

    2016-08-24

    We report here on the controlled synthesis, characterization, and electrochemical properties of different polymorphs of niobium pentoxide grown by CVD of new single-source precursors. Nb2O5 films deposited at different temperatures showed systematic phase evolution from low-temperature tetragonal (TT-Nb2O5, T-Nb2O5) to high temperature monoclinic modifications (H-Nb2O5). Optimization of the precursor flux and substrate temperature enabled phase-selective growth of Nb2O5 nanorods and films on conductive mesoporous biomorphic carbon matrices (BioC). Nb2O5 thin films deposited on monolithic BioC scaffolds produced composite materials integrating the high surface area and conductivity of the carbonaceous matrix with the intrinsically high capacitance of nanostructured niobium oxide. Heterojunctions in Nb2O5/BioC composites were found to be beneficial in electrochemical capacitance. Electrochemical characterization of Nb2O5/BioC composites showed that small amounts of Nb2O5 (as low as 5%) in conjunction with BioCarbon resulted in a 7-fold increase in the electrode capacitance, from 15 to 104 F g(-1), while imparting good cycling stability, making these materials ideally suited for electrochemical energy storage applications. PMID:27420568

  18. Characteristics of atomic layer deposition grown HfO{sub 2} films after exposure to plasma treatments

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Y.W. [Kookje Electric Korea Co. LTD, 4-2 Chaam-Dong, Chonan-Si, Chungcheongnam-Do (Korea, Republic of)]. E-mail: ywkim@kekorea.co.kr; Roh, Y. [School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Yoo, Ji-Beom [School of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)]. E-mail: jibyoo@skku.ac.kr; Kim, Hyoungsub [School of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

    2007-01-22

    Ultra thin HfO{sub 2} films were grown by the atomic layer deposition (ALD) technique using tetrakismethylethylaminohafnium (Hf[N(CH){sub 3}(C{sub 2}H{sub 5})]{sub 4}) and ozone (O{sub 3}) as the precursors and subsequently exposed to various plasma conditions, i.e., CCP (capacitively coupled plasma) and MMT (modified magnetron typed plasma) in N{sub 2} or N{sub 2}/O{sub 2} ambient. The conventional CCP treatment was not effective in removing the carbon impurities, which were incorporated during the ALD process, from the HfO{sub 2} films. However, according to the X-ray photoelectron spectroscopy measurements, the MMT treated films exhibited a significant reduction in their carbon contents and the efficient incorporation of nitrogen atoms. Although the incorporated nitrogen was easily released during the post-thermal annealing of the MMT treated samples, it was more effective than the CCP treatment in removing the film impurities. Consequently, the MMT treated samples exhibited excellent electrical properties as compared to the as-deposited HfO{sub 2} films, including negligible hysteresis (flatband voltage shift), a low leakage current, and the reduced equivalent oxide thickness of the gate stack. In conclusion, MMT post treatment is more effective than conventional CCP treatment in improving the electrical properties of high-k films by reducing the carbon contamination and densifying the as-deposited defective films.

  19. Effects of acetylene flow rate and processing temperature on graphene films grown by thermal chemical vapor deposition

    International Nuclear Information System (INIS)

    We used thermal chemical vapor deposition (CVD) to synthesize few-layer graphene (FLG) films at a low temperature (600 °C). The FLG films were synthesized on Ni foils using a gaseous mixture of various ratios of H2 to acetylene (C2H2). We investigated that the effects of C2H2 flow on the structural properties of graphene. The quality of low-temperature CVD FLG films was investigated by Raman spectroscopy, field-emission scanning electron microscopy, and high-resolution transmission electron microscopy. The results of Raman spectroscopy revealed that C2H2 flux clearly influences the features of FLG films. To enhance the quality of FLG films grown by low-temperature CVD, the films were grown under various gas flow ratios. The results demonstrated that the common thermal CVD method that uses C2H2 as a supplemental carbon source constitutes a low-cost and easy way to synthesize graphene films at low temperature for graphene-based applications. - Highlights: • We synthesized the graphene on nickel foil by thermal CVD method. • The graphene was successfully synthesized at a low temperature of 600 °C. • The acetylene flows were controlled to enhance the quality of graphene

  20. Evidence that an internal carbonic anhydrase is present in 5% CO2-grown and air-grown Chlamydomonas

    International Nuclear Information System (INIS)

    Inorganic carbon (C/sub i/) uptake was measured in wild-type cells of Chlamydomonas reinhardtii, and in cia-3, a mutant strain of C. reinhardtii that cannot grow with air levels of CO2. Both air-grown cells, that have a CO2 concentrating system, and 5% CO2-grown cells that do not have this system, were used. When the external pH was 5.1 or 7.3, air-grown, wild-type cells accumulated inorganic carbon (C/sub i/) and this accumulation was enhanced when the permeant carbonic anhydrase inhibitor, ethoxyzolamide, was added. When the external pH was 5.1, 5% CO2-grown cells also accumulated some C/sub i/, although not as much as air-grown cells and this accumulation was stimulated by the addition of ethoxyzolamide. At the same time, ethoxyzolamide inhibited CO2 fixation by high CO2-grown, wild-type cells at both pH 5.1 and 7.3. These observations imply that 5% CO2-grown, wild-type cells, have a physiologically important internal carbonic anhydrase, although the major carbonic anhydrase located in the periplasmic space is only present in air-grown cells. Inorganic carbon uptake by cia-3 cells supported this conclusion. This mutant strain, which is thought to lack an internal carbonic anhydrase, was unaffected by ethoxyzolamide at pH 5.1. Other physiological characteristics of cia-3 resemble those of wild-type cells that have been treated with ethoxyzolamide. It is concluded that an internal carbonic anhydrase is under different regulatory control than the periplasmic carbonic anhydrase

  1. Photoresponse properties of BaSi2 film grown on Si (100) by vacuum evaporation

    Science.gov (United States)

    Thi Trinh, Cham; Nakagawa, Yoshihiko; Hara, Kosuke O.; Takabe, Ryota; Suemasu, Takashi; Usami, Noritaka

    2016-07-01

    We have succeeded in the observation of high photoresponsivity of orthorhombic BaSi2 film grown on crystalline Si by a vacuum evaporation method, raising the prospect of its promising application in high-efficiency thin-film solar cells. Photocurrent was observed at photon energies larger than 1.28 eV, which corresponds to the band gap of evaporated BaSi2 film, indicating that the photoresponsivity originates from the BaSi2 film. The effect of the substrate temperature on the film’s properties was also investigated. The films grown at a substrate temperature larger than 500 °C are single-phase polycrystalline BaSi2 films, while those grown at a substrate temperature of 400 °C is a mixture of phases. We confirmed that undoped evaporated BaSi2 films are an n-type material with high carrier concentration. High carrier lifetime of 4.8 and 2.7 μs can be found for the films grown at 500 °C and 400 °C, respectively. BaSi2 film grown at a substrate temperature of 500 °C, which is crack-free and single-phase, shows the best photoresponsivity. The maximum value of photocurrent was obtained at photon energy of 1.9 eV, corresponding to an external quantum efficiency of 22% under reverse applied voltage of 2 V.

  2. Optical characterization of sputtered carbon films

    Energy Technology Data Exchange (ETDEWEB)

    Ager, J.W. III.

    1992-05-01

    Spattered carbon films are widely used as protective overcoats for thin film disk media. Raman spectroscopy is nondestructive and relatively rapid and is well suited for the characterization of carbon films. Specific features in the Raman spectra are empirically correlated with the rates of specific types of mechanical wear for both hydrogenated and unhydrogenated films. This observation is interpreted in terms of a random covalent network, in which the mechanical performance of the film is determined by the nature of the bonding that links sp{sup 2}-bonded domains.

  3. Residual stress stability in fiber textured stoichiometric AlN film grown using rf magnetron sputtering

    International Nuclear Information System (INIS)

    The authors report on the stability of mechanical stress with aging and thermal cycling for columnar structured stoichiometric and homogeneous aluminum nitride thin films grown using radio frequency magnetron sputtering technique. The set of deposition parameters were optimized for the best possible orientation of crystallites in the c axis of compositionally stoichiometric films. The as-grown stress in the slightly nitrogen-rich film does not change when exposed to the atmosphere following deposition, while that in the nitrogen-deficient film, it changes due to oxidation. Additionally, the magnitude of as-grown stress has been found to depend on the substrate material in addition to the deposition parameters. The stress in the film grown on a Si(001) substrate was more tensile than in the film grown on a semi-insulating (si) GaAs(001) substrate for a given set of deposition parameters. Furthermore, the stress in the film grown on Si decreased with temperature, while that on si GaAs increased, indicating the thermally induced stress component to be the major component in the residual stress. Upon subsequent cooling the stress changes in both substrates followed the same path as of heating, thus exhibiting no hysteresis with thermal cycles between room temperature and 400 deg. C.

  4. Textured YBCO films grown on wires: application to superconducting cables

    International Nuclear Information System (INIS)

    Efforts to fabricate superconducting wires made of YBa2Cu3O7 (YBCO) on La2Zr2O7 (LZO) buffered and biaxially textured Ni-5 at.%W (NiW) are described. Wires were manually shaped from LZO buffered NiW tapes. Different diameters were produced: 1.5, 2 and 3 mm. The wires were further covered with YBCO grown by metal organic chemical vapor deposition (MOCVD). We developed an original device in which the round substrate undergoes an alternated rotation of 180° around its axis in addition to a reel-to-reel translation. This new approach allows covering the whole circumference of the wire with a YBCO layer. This was confirmed by energy dispersive x-ray spectroscopy (EDX) analysis coupled to a scanning electron microscope (SEM). For all wire diameters, the YBCO layer thickness varied from 300 to 450 nm, and the cationic composition was respected. Electron backscattering diffraction (EBSD) measurements were performed directly on an as-deposited wire without surface preparation allowing the investigation of the crystalline quality of the film surface. Combining EBSD with XRD results we show that YBCO grows epitaxially on the LZO buffered NiW wires. For the first time, superconductive behaviors have been detected on round substrates in both the rolling and circular direction. Jc reached 0.3 MA cm−2 as measured at 77 K by transport and third-harmonic detection. Those preliminary results confirm the effectiveness of the MOCVD for complex geometries, especially for YBCO deposition on small diameter wires. This approach opens huge perspectives for the elaboration of a new generation of YBCO-based round conductors. (paper)

  5. Micro-porous TiO2 thin films grown on surface of Ti substrate

    Institute of Scientific and Technical Information of China (English)

    WU Xiao-hong; QIN Wei; JIANG Zhao-hua; HU Xin-guo; Li Qing-fen

    2004-01-01

    Microporous titanium dioxide thin films have been grown on titanium plates by the micro-plasma oxidation method with different current densities (4, 6, 10 and 14 A/dm2). X-ray diffraction, scanning electronic microscopy and UV-Vis spectrophotometry were used to characterize the films. It is found that the films grown are microporous and consist of crystalline titanium dioxide. The micropore size and the content of anatase and rutile TiO2 phase increase with the applied voltage. The relatively higher degradation efficiency for rhodamine B is obtained in the film produced with a current density of 10 A/dm2.

  6. Vapor Phase Sensing Using Metal Nanorod Thin Films Grown by Cryogenic Oblique Angle Deposition

    Directory of Open Access Journals (Sweden)

    Piyush Shah

    2013-01-01

    Full Text Available We demonstrate the chemical sensing capability of silver nanostructured films grown by cryogenic oblique angle deposition (OAD. For comparison, the films are grown side by side at cryogenic (~100 K and at room temperature (~300 K by e-beam evaporation. Based on the observed structural differences, it was hypothesized that the cryogenic OAD silver films should show an increased surface enhanced Raman scattering (SERS sensitivity. COMSOL simulation results are presented to validate this hypothesis. Experimental SERS results of 4-aminobenzenethiol (4-ABT Raman test probe molecules in vapor phase show good agreement with the simulation and indicate promising SERS applications for these nanostructured thin films.

  7. Room temperature direct band gap emission characteristics of surfactant mediated grown compressively strained Ge films

    Science.gov (United States)

    Katiyar, Ajit K.; Grimm, Andreas; Bar, R.; Schmidt, Jan; Wietler, Tobias; Joerg Osten, H.; Ray, Samit K.

    2016-10-01

    Compressively strained Ge films have been grown on relaxed Si0.45Ge0.55 virtual substrates using molecular beam epitaxy in the presence of Sb as a surfactant. Structural characterization has shown that films grown in the presence of surfactant exhibit very smooth surfaces with a relatively higher strain value in comparison to those grown without any surfactant. The variation of strain with increasing Ge layer thickness was analyzed using Raman spectroscopy. The strain is found to be reduced with increasing film thickness due to the onset of island nucleation following Stranski-Krastanov growth mechanism. No phonon assisted direct band gap photoluminescence from compressively strained Ge films grown on relaxed Si0.45Ge0.55 has been achieved up to room temperature. Excitation power and temperature dependent photoluminescence have been studied in details to investigate the origin of different emission sub-bands.

  8. Post-annealing effects on pulsed laser deposition-grown GaN thin films

    Energy Technology Data Exchange (ETDEWEB)

    Cheng, Yu-Wen; Wu, Hao-Yu; Lin, Yu-Zhong; Lee, Cheng-Che; Lin, Ching-Fuh, E-mail: lincf@ntu.edu.tw

    2015-02-27

    In this work, the post-annealing effects on gallium nitride (GaN) thin films grown from pulsed laser deposition (PLD) are investigated. The as-deposited GaN thin films grown from PLD are annealed at different temperatures in nitrogen ambient. Significant changes of the GaN crystal properties are observed. Raman spectroscopy is used to observe the crystallinity, the change of residual stress, and the thermal decomposition of the annealed GaN thin films. X-ray diffraction is also applied to identify the crystal phase of GaN thin films, and the surface morphology of GaN thin films annealed at different temperatures is observed by scanning electron microscopy. Through the above analyses, the GaN thin films grown by PLD undergo three stages: phase transition, stress alteration, and thermal decomposition. At a low annealing temperature, the rock salt GaN in GaN films is transformed into wurtzite. The rock salt GaN diminishes with increasing annealing temperature. At a medium annealing temperature, the residual stress of the film changes significantly from compressive strain to tensile strain. As the annealing temperature further increases, the GaN undergoes thermal decomposition and the surface becomes granular. By investigating the annealing temperature effects and controlling the optimized annealing temperature of the GaN thin films, we are able to obtain highly crystalline and strain-free GaN thin films by PLD. - Highlights: • The GaN thin film is grown on sapphire by pulsed laser deposition. • The GaN film undergoes three stages with increasing annealing temperature. • In the first stage, the film transfers from rock salt to wurtzite phase. • In the second stage, the stress in film changes from compressive to tensile. • In the final stage, the film thermally decomposes and becomes granular.

  9. Investiagtion of Nanoscale Carbon Nitride Thin Films Grown Using DC HCD Hollow Cathode Discharge%用直流中空阴极放电方法(DC HCD)生长的纳米级碳的氮化物薄膜研究

    Institute of Scientific and Technical Information of China (English)

    YAN Y.H.; SHI Y.C.; YANG P.; TANG X.L.; FENG P.X.

    2005-01-01

    There is growing interest in the underlying physical processes in optoelectronic devices based on thin-film multilayer structures. Recently, many investigators have made great efforts on synthesizing the ultra - hard nanoscale carbon nitride thin films. Considering low cost and simple configuration, we used DC hollow cathode discharge (HCD) for deposition of nanoscale carbon nitride thin films.

  10. Intrinsic stress analysis of sputtered carbon film

    Institute of Scientific and Technical Information of China (English)

    Liqin Liu; Zhanshan Wang; Jingtao Zhu; Zhong Zhang; Moyan Tan; Qiushi Huang; Rui Chen; Jing Xu; Lingyan Chen

    2008-01-01

    Intrinsic stresses of carbon films deposited by direct current (DC) magnetron sputtering were investigated.The bombardments of energetic particles during the growth of films were considered to be the main reason for compressive intrinsic stresses.The values of intrinsic stresses were determined by measuring the radius of curvature of substrates before and after film deposition.By varying argon pressure and target-substrate distance,energies of neutral carbon atoms impinging on the growing films were optimized to control the intrinsic stresses level.The stress evolution in carbon films as a function of film thickness was investigated and a void-related stress relief mechanism was proposed to interpret this evolution.

  11. Bond strength of individual carbon nanotubes grown directly on carbon fibers

    Science.gov (United States)

    Kim, Kyoung Ju; Lee, Geunsung; Kim, Sung-Dae; Kim, Seong-Il; Youk, Ji Ho; Lee, Jinyong; Kim, Young-Woon; Yu, Woong-Ryeol

    2016-10-01

    The performance of carbon nanotube (CNT)-based devices strongly depends on the adhesion of CNTs to the substrate on which they were directly grown. We report on the bond strength of CNTs grown on a carbon fiber (T700SC Toray), measured via in situ pulling of individual CNTs inside a transmission electron microscope. The bond strength of an individual CNT, obtained from the measured pulling force and CNT cross-section, was very high (˜200 MPa), 8-10 times higher than that of an adhesion model assuming only van der Waals interactions (25 MPa), presumably due to carbon-carbon interactions between the CNT (its bottom atoms) and the carbon substrate.

  12. Surface morphologies of MOCVD-grown GaN films on sapphire studied by scanning tunneling microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, J.; Reddic, J.E.; Sinha, M.; Ricker, W.S.; Karlinsey, J.; Yang, J.-W.; Khan, M.A.; Chen, D.A

    2002-12-30

    The surface morphologies of MOCVD GaN films grown on sapphire substrates have been investigated by scanning tunneling microscopy (STM). High quality STM images could not be obtained prior to cleaning the les in HF, hot HCl or 2 M NaOH. STM images of the GaN films showed that the surfaces consisted of curved step edges and interlocking terraces, which were roughly 224 nm wide. Surface pits approximately 2-5 nm deep and 50-80 nm wide were observed on the GaN films, and these pits were preferentially located at a juncture between two step edges. Previous studies in the literature involving MOCVD-grown GaN on sapphire have demonstrated that the surface pits are associated with screw-component threading dislocations. Therefore, the number of screw-component threading dislocations in these GaN films is estimated as 6.3x10{sup 8} cm{sup -2} from the number surface pits observed in the STM images. X-ray photoelectron studies indicated that the major surface contaminants before cleaning were carbon and oxygen. Treatment in HF or HCl removed oxygen from the surface while treatment in NaOH was more effective at removing surface carbon.

  13. Piezoresistive effect in carbon nanotube films

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    The piezoresistive effect of the pristine carbon nanotube (CNT) films has been studied. Carbon nanotubes were synthesized by hot filament chemical vapor deposition. The piezoresistive effect in the pristine CNT films was studied by a three-point bending test. The gauge factor for the pristine CNT films under 500 microstrains was found to be at least 65 at room temperature, and increased with temperature, exceeding that of polycrystalline silicon (30) at 35℃. The origin of the piezoresistivity in CNT films may be ascribed to a pressure-induced change in the band gap and the defects.

  14. Opto-electrical properties of amorphous carbon thin film deposited from natural precursor camphor

    Energy Technology Data Exchange (ETDEWEB)

    Pradhan, Debabrata [Department of Chemistry, Indian Institute of Technology Bombay, Mumbai 400 076 (India)]. E-mail: dpradhan@sciborg.uwaterloo.ca; Sharon, Maheshwar [Department of Chemistry, Indian Institute of Technology Bombay, Mumbai 400 076 (India)

    2007-06-30

    A simple thermal chemical vapor deposition technique is employed for the pyrolysis of a natural precursor 'camphor' and deposition of carbon films on alumina substrate at higher temperatures (600-900 deg. C). X-ray diffraction measurement reveals the amorphous structure of these films. The carbon films properties are found to significantly vary with the deposition temperatures. At higher deposition temperature, films have shown predominately sp{sup 2}-bonded carbon and therefore, higher conductivity and lower optical band gap (Tauc gap). These amorphous carbon (a-C) films are also characterized with Raman and X-ray photoelectron spectroscopy. In addition, electrical and optical properties are measured. The thermoelectric measurement shows these as-grown a-C films are p-type in nature.

  15. Surface phonons of NiO(001) ultrathin films grown pseudomorphically on Ag(001)

    OpenAIRE

    Kostov, K. L.; Polzin, S.; Schumann, F. O.; Widdra, W.

    2015-01-01

    For a ultrathin NiO(001) film of 4 monolayers (ML) thickness grown on Ag(001), the vibrational properties have been determined by high-resolution electron energy loss spectroscopy (HREELS). For the well-ordered pseudomorphically grown film, nine phonon modes have been identified and their dispersions have been revealed along the Gamma-X high-symmetry direction. The comparison with phonon data for a 25 ML thick NiO(001) film shows that the NiO (001) phonon properties are already fully develope...

  16. Electrical properties of ZnO thin films grown by MOCVD

    International Nuclear Information System (INIS)

    We report on the electrical characterization of ZnO films grown by MOCVD on glass and sapphire substrates. After correcting our temperature variable Hall measurements by applying the standard two-layer model, which takes into account an interfacial layer, scattering mechanisms in the ZnO films were studied as well as donor activation energies determined. ZnO films grown at different oxygen partial pressures indicated the importance of growth conditions on the defect structure by means of their conductivities and conductivity activation energies

  17. Optical characterization of a-Si:H thin films grown by Hg-Photo-CVD

    International Nuclear Information System (INIS)

    Mercury-Sensitized Photo-Assisted Chemical Vapor Deposition (Hg-Photo-CVD) technique opens new possibilities for reducing thin film growth temperature and producing novel semiconductor materials suitable for the future generation of high efficiency thin film solar cells onto low cost flexible plastic substrates. This paper provides some experimental data resulting from the optical characterization of hydrogenated amorphous silicon thin films grown by this deposition technique. Experiments have been performed on both as-deposited layers and thermal annealed ones. (author)

  18. As-grown magnesium diboride superconducting thin films deposited by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Grassano, G.; Ramadan, W.; Ferrando, V.; Bellingeri, E.; Marre, D.; Ferdeghini, C.; Grasso, G.; Putti, M.; Chincarini, A. [INFM, Dipartimento di Fisica, Genoa (Italy); Manfrinetti, P.; Palenzona, A. [INFM, Dipartimento di Chimica e Chimica Industriale, Genoa (Italy)

    2001-09-01

    As-grown superconducting MgB{sub 2} thin films were deposited by pulsed laser deposition on magnesium oxide and sapphire substrates. Starting from a non-stoichiometric, Mg and B mixed-powder target, we were able to grow the superconducting phase during the film deposition, without any further annealing process. So far, samples grown in the temperature range of 400-450 deg. C, and at an argon buffer pressure of the order of 10{sup -2} mbar turned out to be superconducting with an onset temperature of the resistive transition at about 25 K. Even if the deposition process still needs to be fully optimized, we have demonstrated that this method allows us to achieve in situ deposition of as-grown superconducting thin films. This procedure could therefore be promising for the deposition of high-quality epitaxial MgB{sub 2} thin films. (author)

  19. Origin of graphitic filaments on improving the electron field emission properties of negative bias-enhanced grown ultrananocrystalline diamond films in CH4/Ar plasma

    International Nuclear Information System (INIS)

    Microstructural evolution of bias-enhanced grown (BEG) ultrananocrystalline diamond (UNCD) films has been investigated using microwave plasma enhanced chemical vapor deposition in gas mixtures of CH4 and Ar under different negative bias voltages ranging from −50 to −200 V. Scanning electron microscopy and Raman spectroscopy were used to characterize the morphology, growth rate, and chemical bonding of the synthesized films. Transmission electron microscopic investigation reveals that the application of bias voltage induced the formation of the nanographitic filaments in the grain boundaries of the films, in addition to the reduction of the size of diamond grains to ultra-nanosized granular structured grains. For BEG-UNCD films under −200 V, the electron field emission (EFE) process can be turned on at a field as small as 4.08 V/μm, attaining a EFE current density as large as 3.19 mA/cm2 at an applied field of 8.64 V/μm. But the films grown without bias (0 V) have mostly amorphous carbon phases in the grain boundaries, possessing poorer EFE than those of the films grown using bias. Consequently, the induction of nanographitic filaments in grain boundaries of UNCD films grown in CH4/Ar plasma due to large applied bias voltage of −200 V is the prime factor, which possibly forms interconnected paths for facilitating the transport of electrons that markedly enhance the EFE properties.

  20. Piezoresistive Sensors Based on Carbon Nanotube Films

    Institute of Scientific and Technical Information of China (English)

    L(U) Jian-wei; WANG Wan-lu; LIAO Ke-jun; WANG Yong-tian; LIU CHang-lin; Zeng Qing-gao

    2005-01-01

    Piezoresistive effect of carbon nanotube films was investigated by a three-point bending test.Carbon nanotubes were synthesized by hot filament chemical vapor deposition.The experimental results showed that the carbon nanotubes have a striking piezoresistive effect.The relative resistance was changed from 0 to 10.5×10-2 and 3.25×10-2 for doped and undoped films respectively at room temperature when the microstrain under stress from 0 to 500. The gauge factors for doped and undoped carbon nanotube films under 500 microstrain were about 220 and 67 at room temperature, respectively, exceeding that of polycrystalline silicon (30) at 35℃.The origin of the resistance changes in the films may be attributed to a strain-induced change in the band gap for the doped tubes and the defects for the undoped tubes.

  1. Influence of Annealing on Properties of ZnO Films Grown via Plasma-enhanced MOCVD

    Institute of Scientific and Technical Information of China (English)

    ZHAO Bai-jun; LIU Da-li; LI Wan-cheng; FANG Xiu-jun; DU Guo-tong; YANG Hong-jun; WANG Jinz-hong; ZHANG Yuan-tao; YANG Xiao-tian; LIU Bo-yang; MA Yan; YANG Tian-peng

    2003-01-01

    The structural and the optical properties of ZnO films with high quality grown via plasma-enhanced metal-organic chemical vapour deposition(MOCVD) on C-plane sapphire substrate were studied. The crystallinity and the optical properties of the films are greatly improved having been annealed in oxygen plasma atmosphere. The structure, the band gap and the binding energy of O1s electrons, and the molar ratio of O to Zn were determined by X-ray diffraction(XRD), photoluminescence(PL) and X-ray photoelectron scan methods. For both the annealed and the as-grown films, the exciton peak features were observed at room temperature. The band-edge photoluminescence of the annealed film is much stronger than that of the as-grown film, and the exciton peak relating to the deep level at 439 nm disappears. The molar ratio of O to Zn in the annealed film is 0.91, while it is 0.78 for the as-grown film.

  2. Preparation of composite electroheat carbon film

    Institute of Scientific and Technical Information of China (English)

    XIA Jin-tong; TU Chuan-jun; LI Yan; HU Li-min; DENG Jiu-hua

    2005-01-01

    A kind of conductive and heating unit, which can reach a high surface electroheat temperature at a low voltage, was developed in view of the traditional electroheat coating which has a low surface electroheat temperature and an insufficient heat resistance of its binder. The coating molded electroheat carbon film(CMECF) was prepared by carbonizing the coating which was prepared by adding modified resin into flake graphite and carbon fiber, coating molded onto the surface of the heat resisting matrix after dried, while the hot pressing molded electroheat thick carbon film(HPMETCF) was prepared by carbonizing the bodies whose powders were hot pressing molded directly.The surface and inner microstructure of the carbon film was characterized and analyzed by SEM and DSC/TG, while electroheat property was tested by voltage-current volume resistivity tester and electrical parameter tester. The results show that, close-packed carbon network configuration is formed within the composite electroheat carbon film film after anti-oxidizable treatment reaches a higher surface electroheat temperature than that of the existing electroheat coatings at a low voltage, and has excellent electroheat property, high thermal efficiency as well as stable physicochemical property. It is found that, at room temperature(19± 2 ℃) and 22 V for 5 min, the surface electroheat temperature of the self-produced CMECF (mfiller/mresin = 1. 8/1) reaches 112 ℃ while HPMETCF (mfiller/mresin = 3. 6/1) reaches 265 ℃.

  3. Silicon nanocrystals embedded in oxide films grown by magnetron sputtering

    Directory of Open Access Journals (Sweden)

    Caroline Bonafos

    2016-05-01

    Full Text Available This paper presents a comparison of the results that we obtained and reported over the last few years on the structural, optical and light emitting properties of Si-SiO2 and Si-Al2O3 films that were fabricated using a specific configuration of RF magnetron sputtering. In these films the Si volume fraction, x, varies along the film (which is typically 14 cm long from a value of ~0.1 at one end to ~0.9 at the other end. For the films with x > 0.3, the formation of amorphous Si clusters was observed in as-deposited Si-SiO2 and Si-Al2O3 films. Si nanocrystals (Si-ncs were generated by high-temperature annealing of the films in nitrogen atmosphere. We found that two processes can contribute to the Si-ncs formation: (i the crystallization of the existing amorphous Si inclusions in the as-deposited films, and (ii the thermally stimulated phase separation. Process (i can be responsible for the independence of Si-ncs mean sizes on x in annealed films with x > 0.5. At the same time, difference in the structural and the light emitting properties of the two types of films was observed. For the samples of the same x, the Si-ncs embedded in the Al2O3 host were found to be larger than the Si-ncs in the SiO2 host. This phenomenon can be explained by the lower temperature required for phase separation in Si-Al2O3 or by the lower temperature of the crystallization of Si-ncs in alumina. The latter suggestion is supported by Raman scattering and electron paramagnetic resonance spectra. In contrast with the Si-SiO2, the Si-ncs embedded in Si-Al2O3 films were found to be under tensile stress. This effect was explained by the strains at the interfaces between the film and silica substrate as well as between the Si inclusions and the Al2O3 host. It was also shown that exciton recombination in Si-ncs is the dominant radiative channel in Si-SiO2 films, while the emission from the oxide defects dominates in Si-Al2O3 films. This can be due to the high number of non

  4. Surface phonons of NiO(001) ultrathin films grown pseudomorphically on Ag(001)

    Science.gov (United States)

    Kostov, K. L.; Polzin, S.; Schumann, F. O.; Widdra, W.

    2016-01-01

    For an ultrathin NiO(001) film of 4 monolayer (ML) thickness grown on Ag(001), the vibrational properties have been determined by high-resolution electron energy loss spectroscopy (HREELS). For the well-ordered pseudomorphically grown film, nine phonon modes have been identified and their dispersions have been revealed along the ΓbarΧbar high-symmetry direction. The comparison with phonon data for a 25 ML thick NiO(001) film shows that the NiO(001) phonon properties are already fully developed at 4 ML. Significant differences are found for the surface-localized phonon S6 which has an increased dispersion for the ultrathin film. The dipole-active Fuchs-Kliewer phonon-polariton exhibits a narrower lineshape than the mode found for a single-crystal surface, which might hint to a reduced antiferromagnetic coupling in the ultrathin film.

  5. Structure and photoluminescence of films composed of carbon nanoflakes

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Yi, E-mail: wangyi@cqut.edu.cn [College of Mechanical Engineering, Chongqing University of Technology, 69 Hongguang Rd, Lijiatuo, Banan District, Chongqing 400054, P R China (China); Li, Lin [College of Chemistry, Chongqing Normal University, Chongqing 401331, P R China (China); Cheng, Qijin [School of Energy Research, Xiamen University, Xiamen 361005, P R China (China); He, Chunlin [Liaoning Provincial Key Laboratory of Advanced Materials, Shenyang University, Shenyang 110044, P R China (China)

    2015-05-15

    Carbon nanoflake films (CNFFs) were directly synthesized by plasma-enhanced hot filament chemical vapor deposition. The results of field emission scanning electron microscope, transmission electron microscope, micro-Raman spectroscope, X-ray photoelectron spectroscope and Fourier transform infrared spectroscope indicate that the CNFFs are composed of bending carbon nanoflakes with the hydrocarbon and hydroxyl functional groups, and the carbon nanoflakes become thin in a long deposition time. The structural change of carbon nanoflakes is related to the formation of structural units and the aggregation of hydrocarbon radicals near the carbon nanoflakes. Moreover, the photoluminescence (PL) properties of CNFFs were studied in a Ramalog system and a PL spectroscope. The PL results indicate that the PL intensity of CNFFs is lowered with the increase of thickness of CNFFs. The lowering of PL intensity for the thick CNFFs originates from the effect of more dangling bonds in the CNFFs. In addition, we studied the structural difference of carbon nanoflakes grown by different CVD systems and the PL difference of carbon nanoflakes in different measurement systems. The results achieved here are important to control the growth and structure of graphene-based materials and fabricate the optoelectronic devices related to carbon-based materials. - Highlights: • Carbon nanoflake films (CNFFs) were synthesized by PEHFCVD. • The structure of CNFFs is related to the aggregation of carbon hydrocarbon radicals. • The PL intensity of CNFFs is lowered with the thickness increase of CNFFs. • The change of PL intensity of CNFFs is due to the dangling bonds in CNFFs. • The widening of PL bands of CNFFs results from the diversity of carbon nanofalkes.

  6. Grain size, texture, and crystallinity in lanthanum monosulfide thin films grown by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Fairchild, S., E-mail: steven.fairchild@wpafb.af.mil [Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright-Patterson Air Force Base, Ohio 45433 (United States); Cahay, M. [School of Electronics and Computing Systems, University of Cincinnati, Cincinnati, Ohio 45221 (United States); Murray, P.T. [Research Institute, University of Dayton, Dayton, OH 45469-0170 (United States); Grazulis, L. [Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright-Patterson Air Force Base, Ohio 45433 (United States); Wu, X.; Poitras, D.; Lockwood, D.J. [Institute for Microstructural Sciences, National Research Council, Ottawa, Ontario, Canada K1A OR6 (Canada)

    2012-12-01

    We report a detailed investigation of the growth of lanthanum monosulfide (LaS) thin films by pulsed laser deposition on (001) magnesium oxide (MgO) substrates in a background of H{sub 2}S for the purpose of optimizing their crystallinity, texture, and grain size. A variety of films were grown while varying the laser repetition rate, the temperature of the substrate, and the partial pressure of H{sub 2}S. The thin films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), Raman spectroscopy, and high resolution transmission electron microscopy. Films grown at 500 Degree-Sign C with a H{sub 2}S background pressure of 3.4 Multiplication-Sign 10{sup -4} Pa and a laser repetition rate of 8 Hz produced the LaS film with the largest grains whose size averaged 293 nm. The XRD pattern of these films revealed that their orientation was predominantly (200). AFM images of the surface of these films showed large plate-like grains. This contrasts with the fine grain structure observed in LaS films grown at a lower substrate temperature and lower H{sub 2}S pressure. - Highlights: Black-Right-Pointing-Pointer LaS thin films were grown by pulsed laser deposition on MgO substrates in H{sub 2}S. Black-Right-Pointing-Pointer Deposition parameters were substrate temperature, H{sub 2}S pressure and repetition rate. Black-Right-Pointing-Pointer Film crystallinity, texture, and grain size were investigated. Black-Right-Pointing-Pointer The growth conditions for optimal texture and grain size are reported.

  7. Phase transition of bismuth telluride thin films grown by MBE

    DEFF Research Database (Denmark)

    Fülöp, Attila; Song, Yuxin; Charpentier, Sophie;

    2014-01-01

    A previously unreported phase transition between Bi2Te3 and Bi4Te3 in bismuth telluride grown by molecular beam epitaxy is recorded via XRD, AFM, and SIMS observations. This transition is found to be related to the Te/Bi beam equivalent pressure (BEP) ratio. BEP ratios below 17 favor the formatio...

  8. SnO{sub 2} thin films grown by atomic layer deposition using a novel Sn precursor

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Min-Jung [Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul, 136-791 (Korea, Republic of); Department of Materials Science and Engineering, Yonsei University, Seoul, 120-749 (Korea, Republic of); Cho, Cheol Jin [Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul, 136-791 (Korea, Republic of); Department of Materials Science and Engineering, Seoul National University, Seoul, 151-744 (Korea, Republic of); Kim, Kwang-Chon; Pyeon, Jung Joon [Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul, 136-791 (Korea, Republic of); Park, Hyung-Ho [Department of Materials Science and Engineering, Yonsei University, Seoul, 120-749 (Korea, Republic of); Kim, Hyo-Suk; Han, Jeong Hwan; Kim, Chang Gyoun; Chung, Taek-Mo [Division of Advanced Materials, Korea Research Institute of Chemical Technology (KRICT), Daejeon, 305-600 (Korea, Republic of); Park, Tae Joo [Department of Materials Science and Engineering, Hanyang University, Ansan, 426-791 (Korea, Republic of); Kwon, Beomjin [Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul, 136-791 (Korea, Republic of); Jeong, Doo Seok; Baek, Seung-Hyub [Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul, 136-791 (Korea, Republic of); Department of Nanomaterials, Korea University of Science and Technology, Daejeon, 305-333 (Korea, Republic of); Kang, Chong-Yun; Kim, Jin-Sang [Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul, 136-791 (Korea, Republic of); Kim, Seong Keun, E-mail: s.k.kim@kist.re.kr [Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul, 136-791 (Korea, Republic of); Department of Nanomaterials, Korea University of Science and Technology, Daejeon, 305-333 (Korea, Republic of)

    2014-11-30

    Highlights: • We developed a new ALD process for SnO{sub 2} films using dimethylamino-2-methyl-2-propoxy-tin(II) as a novel Sn precursor. • The SnO{sub 2} films grown from Sn(dmamp){sub 2} has negligible impurity contents. • Sn ions in the films had a single binding state corresponding to Sn{sup 4+} in SnO{sub 2}. - Abstract: SnO{sub 2} thin films were grown by atomic layer deposition (ALD) with dimethylamino-2-methyl-2-propoxy-tin(II) (Sn(dmamp){sub 2}) and O{sub 3} in a temperature range of 100–230 °C. The ALD window was found to be in the range of 100–200 °C. The growth per cycle of the films in the ALD window increased with temperature in the range from 0.018 to 0.042 nm/cycle. Above 230 °C, the self-limiting behavior which is a unique characteristic of ALD, was not observed in the growth because of the thermal decomposition of the Sn(dmamp){sub 2} precursor. The SnO{sub 2} films were amorphous in the ALD window and exhibited quite a smooth surface. Sn ions in all films had a single binding state corresponding to Sn{sup 4+} in SnO{sub 2}. The concentration of carbon and nitrogen in the all SnO{sub 2} films was below the detection limit of the auger electron spectroscopy technique and a very small amount of carbon, nitrogen, and hydrogen was detected by secondary ions mass spectroscopy only. The impurity contents decreased with increasing the growth temperature. This is consistent with the increase in the density of the SnO{sub 2} films with respect to the growth temperature. The ALD process with Sn(dmamp){sub 2} and O{sub 3} shows excellent conformality on a hole structure with an aspect ratio of ∼9. This demonstrates that the ALD process with Sn(dmamp){sub 2} and O{sub 3} is promising for growth of robust and highly pure SnO{sub 2} films.

  9. Property modulation of NiO films grown by radio frequency magnetron sputtering

    International Nuclear Information System (INIS)

    Highlights: • Controllable and preferential growth of NiO films were performed successfully on Si substrates. • Oxygen partial pressure lower than 6% is crucial for transformation of the preferential growth. • The film deposition rate is very sensitive to the low oxygen partial pressure. • NiO lattice expands quadratically with the increasing of oxygen partial pressures. • The films contain high concentration of Ni vacancies and show a good rectifying behavior with p-Si. - Abstract: NiO films were grown on Si substrates by radio frequency magnetron sputtering. The films were analyzed by an X-ray diffractometer, scanning electron microscope, X-ray photoelectron spectroscopy and SCS-4200 semiconductor characterization system. Evolution of the growth mode, lattice strain, morphology, chemistry states and electrical properties were investigated systematically. The film deposition rates and properties are very sensitive to the oxygen partial pressure lower than 10%. It is crucial to decrease the oxygen partial pressure to 2% for (1 1 1) film growth and the films would transform from (1 1 1) to (1 0 0) as the oxygen partial pressure increases from 2% to 6%. The film lattice expands quadratically with the increase of oxygen partial pressure. Nickel vacancy concentration in (1 1 1) films is much higher than that in (1 0 0) films. All (1 0 0) films show good rectifying behavior with p-Si. The film growth modes and properties could be modulated flexibly by controlling the oxygen partial pressures

  10. Raman analyses of residual stress in diamond thin films grown on Ti6Al4V alloy

    Directory of Open Access Journals (Sweden)

    Azevedo Adriana F.

    2003-01-01

    Full Text Available The stress evolution in diamond films grown on Ti6Al4V was investigated in order to develop a comprehensive view of the residual stress formation. Residual stress is composed of intrinsic stress induced during diamond film growth and extrinsic stress caused by the different thermal expansion coefficients between the film and substrate. In the coalescence stage it has been observed that the residual stress is dominated by the microstructure, whereas on continuous films, the thermal stress is more important. In this work diamond thin films with small grain size and good size and good quality were obtained in a surface wave-guide microwave discharge, the Surfatron system, with a negative bias voltage applied between the plasma shell and substrate. For above of -100V applied bias, the ratio of carbon sp³/sp² bond may increase and the nucleation rate increase arising the high value at the -250V applied bias. Stress measurements and sp³ content in the film were studied by Raman scattering spectroscopy. The total residual stress is compressive and varied from -1.52 to -1.48 GPa between 0 and -200 V applied bias, respectively, and above the -200 V, the compressive residual stress increased drastically to -1.80 GPa. The diamond nucleation density was evaluated by top view SEM images.

  11. Fabrication and electrochemical properties of free-standing single-walled carbon nanotube film electrodes

    Institute of Scientific and Technical Information of China (English)

    Niu Zhi-Qiang; Ma Wen-Jun; Dong Hai-Bo; Li Jin-Zhu; Zhou Wei-Ya

    2011-01-01

    An easily manipulative approach was presented to fabricate electrodes using free-standing single-walled carbon nanotube (SWCNT) films grown directly by chemical vapor deposition. Electrochemical properties of the electrodes were investigated. In comparison with the post-deposited SWCNT papers, the directly grown SWCNT film electrodes manifested enhanced electrochemical properties and sensitivity of sensors as well as excellent electrocatalytic activities. A transition from macroelectrode to nanoelectrode behaviours was observed with the increase of scan rate. The heat treatment of the SWCNT film electrodes increased the current signals of electrochemical analyser and background current, because the heat-treatment of the SWCNTs in air could create more oxide defects on the walls of the SWCNTs and make the surfaces of SWCNTs more hydrophilic. The excellent electrochemical properties of the directly grown and heat-treated free-standing SWCNT film electrodes show the potentials in biological and electrocatalytic applications.

  12. Nanocrystalline magnetite thin films grown by dual ion-beam sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Prieto, Pilar, E-mail: pilar.prieto@uam.es [Departamento de Física Aplicada M-12, Universidad Autónoma de Madrid, Cantoblanco, 28049 Madrid (Spain); Ruiz, Patricia [Departamento de Física Aplicada M-12, Universidad Autónoma de Madrid, Cantoblanco, 28049 Madrid (Spain); Ferrer, Isabel J. [Departamento de Física de Materiales M-4, Universidad Autónoma de Madrid, Cantoblanco, 28049 Madrid (Spain); Figuera, Juan de la; Marco, José F. [Instituto de Química Física “Rocasolano”, CSIC, Serrano 119, 28006 Madrid (Spain)

    2015-07-05

    Highlights: • We have grown tensile and compressive strained nanocrystalline magnetite thin films by dual ion beam sputtering. • The magnetic and thermoelectric properties can be controlled by the deposition conditions. • The magnetic anisotropy depends on the crystalline grain size. • The thermoelectric properties depend on the type of strain induced in the films. • In plane uniaxial magnetic anisotropy develops in magnetite thin films with grain sizes ⩽20 nm. - Abstract: We have explored the influence of an ion-assisted beam in the thermoelectric and magnetic properties of nanocrystalline magnetite thin films grown by ion-beam sputtering. The microstructure has been investigated by XRD. Tensile and compressive strained thin films have been obtained as a function of the parameters of the ion-assisted beam. The evolution of the in-plane magnetic anisotropy was attributed to crystalline grain size. In some films, magneto-optical Kerr effect measurements reveal the existence of uniaxial magnetic anisotropy induced by the deposition process related with a small grain size (⩽20 nm). Isotropic magnetic properties have observed in nanocrystalline magnetite thin film having larger grain sizes. The largest power factor of all the films prepared (0.47 μW/K{sup 2} cm), obtained from a Seebeck coefficient of −80 μV/K and an electrical resistivity of 13 mΩ cm, is obtained in a nanocrystalline magnetite thin film with an expanded out-of-plane lattice and with a grain size ≈30 nm.

  13. Pyroelectric and piezoelectric responses of thin AlN films epitaxy-grown on a SiC/Si substrate

    Science.gov (United States)

    Kukushkin, S. A.; Osipov, A. V.; Sergeeva, O. N.; Kiselev, D. A.; Bogomolov, A. A.; Solnyshkin, A. V.; Kaptelov, E. Yu.; Senkevich, S. V.; Pronin, I. P.

    2016-05-01

    This paper presents the results of pyroelectric and piezoelectric studies of AlN films formed by chloride-hydride epitaxy (CHE) and molecular beam epitaxy (MBE) on epitaxial SiC nanolayers grown on Si by the atom substitution method. The surface topography and piezoelectric and pyroelecrtric responses of AlN films have been analyzed. The results of the study have shown that the vertical component of the piezoresponse in CHE-grown AlN films is more homogeneous over the film area than that in MBE-grown AlN films. However, the signal from the MBE-synthesized AlN films proved to be stronger. The inversion of the polar axis (polarization vector) on passage from MBE-grown AlN films to CHE-grown AlN films has been found experimentally. It has been shown that the polar axis in MBE-grown films is directed from the free surface of the film toward the Si substrate while, in CHE-grown films, the polarization vector is directed toward the free surface.

  14. Grown of CdTe:Eu films by pulsed laser deposition

    OpenAIRE

    M. Zapata-Torres; M. González-Alcudia; Meléndez-Lira, M.; O. Calzadilla Amaya

    2006-01-01

    CdTe:Eu films were grown by the pulsed laser deposition method on glass substrates. The targets were prepared with three different concentrations of Cd, Te and Eu employing CdTe and EuTe powders, homogenized by ball milling. X-ray diffraction measurements showed that the samples grown with a mixture of phases related with the structure of CdTe and EuTe, with a little increase of the lattice parameter. Scanning Electron micrographs revealed that CdTe:Eu films presented a texture similar to sol...

  15. Nucleant layer effect on nanocolumnar ZnO films grown by electrodeposition

    OpenAIRE

    Reyes Tolosa, María Dolores; Damonte, Laura Cristina; Brine, Hicham; Bolink, Henk J.; Hernández Fenollosa, María De Los Ángeles

    2013-01-01

    Different ZnO nanostructured films were electrochemically grown, using an aqueous solution based on ZnCl2, on three types of transparent conductive oxides grow on commercial ITO (In2O3:Sn)-covered glass substrates: (1) ZnO prepared by spin coating, (2) ZnO prepared by direct current magnetron sputtering, and (3) commercial ITO-covered glass substrates. Although thin, these primary oxide layers play an important role on the properties of the nanostructured films grown on top of ...

  16. Coaxial carbon plasma gun deposition of amorphous carbon films

    International Nuclear Information System (INIS)

    A unique plasma gun employing coaxial carbon electrodes was used in an attempt to deposit thin films of amorphous diamond-like carbon. A number of different structural, compositional, and electrical characterization techniques were used to characterize these films. These included scanning electron microscopy, scanning transmission electron microscopy, X ray diffraction and absorption, spectrographic analysis, energy dispersive spectroscopy, and selected area electron diffraction. Optical absorption and electrical resistivity measurements were also performed. The films were determined to be primarily amorphous, with poor adhesion to fused silica substrates. Many inclusions of particulates were found to be present as well. Analysis of these particulates revealed the presence of trace impurities, such as Fe and Cu, which were also found in the graphite electrode material. The electrodes were the source of these impurities. No evidence of diamond-like crystallite structure was found in any of the film samples. Details of the apparatus, experimental procedure, and film characteristics are presented

  17. Coaxial carbon plasma gun deposition of amorphous carbon films

    Science.gov (United States)

    Sater, D. M.; Gulino, D. A.; Rutledge, S. K.

    1984-01-01

    A unique plasma gun employing coaxial carbon electrodes was used in an attempt to deposit thin films of amorphous diamond-like carbon. A number of different structural, compositional, and electrical characterization techniques were used to characterize these films. These included scanning electron microscopy, scanning transmission electron microscopy, X ray diffraction and absorption, spectrographic analysis, energy dispersive spectroscopy, and selected area electron diffraction. Optical absorption and electrical resistivity measurements were also performed. The films were determined to be primarily amorphous, with poor adhesion to fused silica substrates. Many inclusions of particulates were found to be present as well. Analysis of these particulates revealed the presence of trace impurities, such as Fe and Cu, which were also found in the graphite electrode material. The electrodes were the source of these impurities. No evidence of diamond-like crystallite structure was found in any of the film samples. Details of the apparatus, experimental procedure, and film characteristics are presented.

  18. Epitaxial Cu(001) films grown on a Cr/Ag/Fe/GaAs(001) buffer system

    International Nuclear Information System (INIS)

    We present a procedure to prepare single-crystalline, high-purity Cu(001) films (templates) suitable as substrates for subsequent epitaxial thin-film growth. The template films were grown in a dedicated molecular-beam epitaxy system on a Cr/Ag/Fe/GaAs(001) buffer layer system. Low-energy electron diffraction and X-ray diffraction were applied to determine the surface orientation and the epitaxial relationship between all layers of the stack. Post-annealing at moderate temperatures enhances the quality of the film as shown by low-energy electron diffraction and atomic force microscopy. X-ray photoemission and Auger electron spectroscopy confirm that no atoms of the buffer layers diffuse into the Cu film during the initial preparation and the post-annealing treatment. The completed Cu(001) template system can be exposed to air and afterwards refurbished by Ar+-ion bombardment and annealing, enabling the transfer between vacuum systems. The procedure provides suitable conductive thin film templates for studies of epitaxial thin films, e.g. on the magnetic and magnetotransport properties of Co and Ni based films and multilayers. - Highlights: • Preparation of epitaxial Cu(001) template films on an insulating substrate • Characterization of template structure, orientation, cleanness, and roughness • Template films can be exposed to air and refurbished in different vacuum system. • Template films are suitable for further thin film growth at up to 570 K

  19. Carbon films produced from ionic liquid carbon precursors

    Science.gov (United States)

    Dai, Sheng; Luo, Huimin; Lee, Je Seung

    2013-11-05

    The invention is directed to a method for producing a film of porous carbon, the method comprising carbonizing a film of an ionic liquid, wherein the ionic liquid has the general formula (X.sup.+a).sub.x(Y.sup.-b).sub.y, wherein the variables a and b are, independently, non-zero integers, and the subscript variables x and y are, independently, non-zero integers, such that ax=by, and at least one of X.sup.+ and Y.sup.- possesses at least one carbon-nitrogen unsaturated bond. The invention is also directed to a composition comprising a porous carbon film possessing a nitrogen content of at least 10 atom %.

  20. Growth and properties of amorphous silicon films grown using pulsed-flow reactive plasma beam epitaxy

    Science.gov (United States)

    Dalal, Vikram L.; Knox, Ralph; Kandalaft, Nabeeh; Baldwin, Greg

    1991-01-01

    The growth and properties of a-Si:H films grown using a novel deposition technique, reactive plasma beam epitaxy, are discussed. In this technique, a remote H plasma produced in a microwave-ECR reactor is used to grow a-Si:H films at low pressures. The H ions react with SiH4 introduced near the substrate to produce the film. The flow of SiH4 is pulsed on or off, thereby achieving in-situ annealing of the film during growth by H ions and radicals. The films produced by this technique appear to have good electronic quality, and are more stable than the standard glow discharge films.

  1. Interfacial diffusion in a MOCVD grown barium titanate film[Metal Organic Chemical Vapor Deposition

    Energy Technology Data Exchange (ETDEWEB)

    Datta, A.; Chattopadhyay, S.; Richter, A.G.; Kmetko, J.; Lee, C.B.

    2000-07-01

    A combination of two nondestructive techniques, Grazing Incidence X-ray Reflectivity and High Resolution X-ray Diffraction, is used to study (at around 10{angstrom} resolution) the composition profile across a 500{angstrom} thick film of BaTiO{sub 3} grown epitaxially on (100) MgO by MOCVD. Results form both studies indicate diffusion of Mg to about 250{angstrom} into the film at film-substrate interface, consistent with the diffuse ferroelectric phase transition observed in this film. The lattice parameter a shows a progressive decrease as the authors move into the film from the interface, and an anomalously low value in the Mg-free portion of the film.

  2. Characterisation of molecular thin films grown by organic molecular beam deposition

    CERN Document Server

    Bayliss, S M

    2000-01-01

    This work concerns the growth and characterisation of molecular thin films in an ultra high vacuum regime by organic molecular beam deposition (OMBD). Films of three different molecular materials are grown, namely free base phthalocyanine (H sub 2 Pc), perylene 3,4,9,10-tetracarboxylic dianhydride (PTCDA) and aluminium tris-8-hydroxyquinoline (Alq sub 3). The relationship between the growth parameters such as film thickness, growth rate, and substrate temperature during and after growth, and the structural, optical and morphological properties of the film are investigated. These investigations are carried out using various ex-situ techniques. X-ray diffraction, Raman spectroscopy and electronic absorption spectroscopy are used to probe the bulk film characteristics, whilst Nomarski microscopy and atomic force microscopy are used to study the surface morphology. Three different levels of influence of the growth parameters on the film properties are observed. In the case of H sub 2 Pc, two crystal phases are fo...

  3. Purification of carbon nanotubes grown by thermal CVD

    Science.gov (United States)

    Porro, S.; Musso, S.; Vinante, M.; Vanzetti, L.; Anderle, M.; Trotta, F.; Tagliaferro, A.

    2007-03-01

    We show the results of a set of purifications on carbon nanotubes (CNT) by acid and basic treatments. CNTs were obtained by thermal decomposition of camphor at 850 °C in a CVD growth system, by means of a growth process catalyzed by iron clusters originating from the addition of ferrocene in the precursors mixture. The purification procedures involved HNO 3, H 2SO 4, HSO 3Cl and NaOH for different process temperatures. As-grown CNTs showed a consistent presence of metal catalyst (about 6 wt%), evidenced by TGA. The purification treatments led to a certain amount of opening of the CNT tips, with a consequent loss of metal catalyst encapsulated in tips. This is also confirmed by BET analysis, which showed an increase of the surface area density of CNT after the purification. FT-IR and XPS revealed the presence of carboxylic groups on the CNT surface chemically modified by the harsh environment of the purification process. Among the various treatments that have been tested, the 1:3 solution of nitric and sulphuric acid was the most effective in modifying the CNT surface and inducing the formation of functional groups.

  4. Microstructure, Photoluminescent Properties and Application of ZnO Films Grown on Al Foils

    Institute of Scientific and Technical Information of China (English)

    WU Hongyan; ZHAO Jiayu; XIE Aigen; XU Linhua; ZHONG Kun; SHEN Tongtong

    2015-01-01

    To obtain safety working before long-term early warning, we proposed a process for the preparation of luminescent films on metal substrate to detect the wear life. ZnO films were prepared on aluminum (Al) foils by the magnetron sputtering technique. The microstructure, tribological properties and photoluminescence (PL) spectra of ZnO films before and after the friction test were investigated. The microstructure of ZnO films grown on Al foils exhibited a closely packed hexagonal cone shape. ZnO films were grown along the orientation perpendicular to the substrate. The tribometric tests revealed that the average friction coefficient of ZnO films was lower and more stable than that of the substrate. The results of PL spectra indicated that the effect of Al element on ZnO films led to shifts of the defect related visible band. The luminescent center of ZnO films shifted from the emission peak at 510 nm before the friction to 647 nm after the friction, indicating that the green light shifted into the red light as the friction occurred. The visible light was helpful to understanding the failure characteristics during the friction and wear, and provide an early indicator of the impending failure.

  5. Tungsten oxide nanowires grown on amorphous-like tungsten films.

    Science.gov (United States)

    Dellasega, D; Pietralunga, S M; Pezzoli, A; Russo, V; Nasi, L; Conti, C; Vahid, M J; Tagliaferri, A; Passoni, M

    2015-09-11

    Tungsten oxide nanowires have been synthesized by vacuum annealing in the range 500-710 °C from amorphous-like tungsten films, deposited on a Si(100) substrate by pulsed laser deposition (PLD) in the presence of a He background pressure. The oxygen required for the nanowires formation is already adsorbed in the W matrix before annealing, its amount depending on deposition parameters. Nanowire crystalline phase and stoichiometry depend on annealing temperature, ranging from W18O49-Magneli phase to monoclinic WO3. Sufficiently long annealing induces the formation of micrometer-long nanowires, up to 3.6 μm with an aspect ratio up to 90. Oxide nanowire growth appears to be triggered by the crystallization of the underlying amorphous W film, promoting their synthesis at low temperatures. PMID:26292084

  6. Electromagnetic characteristics of carbon nanotube film materials

    Directory of Open Access Journals (Sweden)

    Zhang Wei

    2015-08-01

    Full Text Available Carbon nanotube (CNT possesses remarkable electrical conductivity, which shows great potential for the application as electromagnetic shielding material. This paper aims to characterize the electromagnetic parameters of a high CNT loading film by using waveguide method. The effects of layer number of CNT laminate, CNT alignment and resin impregnation on the electromagnetic characteristics were analyzed. It is shown that CNT film exhibits anisotropic electromagnetic characteristic. Pristine CNT film shows higher real part of complex permittivity, conductivity and shielding effectiveness when the polarized direction of incident wave is perpendicular to the winding direction of CNT film. For the CNT film laminates, complex permittivity increases with increasing layer number, and correspondingly, shielding effectiveness decreases. The five-layer CNT film shows extraordinary shielding performance with shielding effectiveness ranging from 67 dB to 78 dB in X-band. Stretching process induces the alignment of CNTs. When aligned direction of CNTs is parallel to the electric field, CNT film shows negative permittivity and higher conductivity. Moreover, resin impregnation into CNT film leads to the decrease of conductivity and shielding effectiveness. This research will contribute to the structural design for the application of CNT film as electromagnetic shielding materials.

  7. Magnetization reversal of ultrathin Fe film grown on Si(111) using iron silicide template

    Institute of Scientific and Technical Information of China (English)

    He Wei; Zhan Qing-Feng; Wang De-Yong; Chen Li-Jun; Sun Young; Cheng Zhao-Hua

    2007-01-01

    Ultrathin Fe films were epitaxially grown on Si(111) by using an ultrathin iron silicide film with p(2 × 2) surface reconstruction as a template. The surface structure and magnetic properties were investigated in situ by low energy electron diffraction (LEED), scanning tunnelling microscopy (STM), and surface magneto-optical effect (SMOKE). Polar SMOKE hysteresis loops demonstrate that the Fe ultrathin films with thickness t< 6 ML (monolayers) exhibit perpendicular magnetic anisotropy. The characters of M-H loops with the external magnetic field at difference angles and the angular dependence of coercivity suggest that the domain-wall pinning plays a dominant role in the magnetization reversal process.

  8. Hydrogen dilution effect on microstructure of Si thin film grown by catalyzer enhanced chemical vapor deposition

    International Nuclear Information System (INIS)

    The effect of hydrogen dilution on microstructure of in situ polycrystalline Si (poly-Si) films grown by catalyzer-enhanced chemical vapor deposition (CECVD) has been investigated by using transmission electron microscopy (TEM) and transmission electron diffraction (TED) analysis. It was shown that the increase of the hydrogen dilution ratio resulted in transition of microstructure of Si thin film from amorphous to polycrystalline in CECVD at low substrate temperature (∼80 deg. C). These results indicate that the CECVD technique is a promising candidate to grow high-quality in situ polycrystalline Si films on glass or a flexible substrate for low-temperature poly-Si (LTPS) and flexible displays

  9. Hydrogen dilution effect on microstructure of Si thin film grown by catalyzer enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Han-Ki [School of Advanced Materials and Systems Engineering, Kumoh National Institute of Technology (KIT), 1 Yangho-dong, Gumi, Gyeongbuk, 730-701 (Korea, Republic of)]. E-mail: hkkim@kumoh.ac.kr

    2006-12-15

    The effect of hydrogen dilution on microstructure of in situ polycrystalline Si (poly-Si) films grown by catalyzer-enhanced chemical vapor deposition (CECVD) has been investigated by using transmission electron microscopy (TEM) and transmission electron diffraction (TED) analysis. It was shown that the increase of the hydrogen dilution ratio resulted in transition of microstructure of Si thin film from amorphous to polycrystalline in CECVD at low substrate temperature ({approx}80 deg. C). These results indicate that the CECVD technique is a promising candidate to grow high-quality in situ polycrystalline Si films on glass or a flexible substrate for low-temperature poly-Si (LTPS) and flexible displays.

  10. Properties of phosphorus-doped zinc oxide films grown by pulsed laser deposition

    International Nuclear Information System (INIS)

    Electrical and chemical bonding properties of P-doped ZnO thin films grown by pulsed laser deposition on sapphire substrates were systematically characterized utilizing the Hall effect and x-ray photoelectron spectroscopy (XPS) measurements. Oxygen growth pressure and postannealing processing play a great role in the properties of these films. Increasing oxygen growth pressure from 5 to 20 Pa enhanced the resistivity of P-doped ZnO films by three orders of magnitude. P-doped ZnO films grown at 700 deg. C under 20 Pa O2 exhibited p-type conductivity with hole concentration of 5x1017 cm-3 and hole mobility of 0.3 cm2/V s. Rapid thermal annealing processing decreased the electron density in the P-doped ZnO films. XPS binding energies of P 2s and 2p peaks showed formation of P-O bonds which increased with oxygen pressure in the films. This indicates formation of defect complexes of P dopants occupying zinc sites PZn and zinc vacancies VZn in the P-doped ZnO films.

  11. Structural properties of ZnO films grown by picosecond pulsed-laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Lansiart, L. [GREMI, UMR 6606 CNRS-Universite d' Orleans, 14 rue d' Issoudun, 45067 Orleans Cedex 2 (France); Millon, E., E-mail: eric.millon@univ-orleans.fr [GREMI, UMR 6606 CNRS-Universite d' Orleans, 14 rue d' Issoudun, 45067 Orleans Cedex 2 (France); Perriere, J. [INSP, UMR 7588 CNRS-Universite Paris VI, 4 Place Jussieu, 75252 Paris Cedex 5 (France); Mathias, J.; Petit, A. [GREMI, UMR 6606 CNRS-Universite d' Orleans, 14 rue d' Issoudun, 45067 Orleans Cedex 2 (France); Seiler, W. [PIMM, UMR 8006 CNRS-ENSAM Paris, 151 bd de l' Hopital, 75013 Paris (France); Boulmer-Leborgne, C. [GREMI, UMR 6606 CNRS-Universite d' Orleans, 14 rue d' Issoudun, 45067 Orleans Cedex 2 (France)

    2012-09-15

    Highlights: Black-Right-Pointing-Pointer Textured and epitaxial ZnO films grown by picosecond pulsed-laser deposition. Black-Right-Pointing-Pointer Epitaxial relationships evidenced on c-cut and r-cut sapphire substrates. Black-Right-Pointing-Pointer Nanocrystallised ZnO films obtained with a growth rate 10 times greater than in nanosecond PLD. - Abstract: Zinc oxide thin films have been grown on c-cut (0 0 0 1) and r-cut (11{sup Macron }02) sapphire substrates by pulsed-laser deposition using a Nd:YAG laser operating at 355 nm in picosecond regime (pulse duration: 42 ps). The composition and the structural properties of the films have been investigated by scanning electron microscopy, Rutherford backscattering spectroscopy and X-ray diffraction according to different substrate temperatures. The RBS spectra show a Zn/O ratio close to 1.1 with a constant in-depth oxygen concentration. The XRD diagrams in Bragg-Brentano geometry display a preferred orientation depending on the used substrate. The large width of XRD peaks is indicative of a small coherence length. In addition, according to the pole figures recorded in asymmetric configuration, epitaxial relationships between substrate and film are evidenced. An increase in the substrate temperature leads to a film crystalline quality improvement. The results are discussed regarding the well-known properties of ZnO films obtained by nanosecond and femtosecond PLD.

  12. Ar ions irradiation effects in ZrN thin films grown by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Craciun, D.; Socol, G.; Dorcioman, G. [Laser Department, National Institute for Laser, Plasma, and Radiation Physics, Bucharest-Magurele (Romania); Simeone, D.; Gosset, D. [CEA/DEN/DANS/DM2S/SERMA/LEPP-LRC CARMEN CEN Saclay France & CNRS/SPMS UMR8785 LRC CARMEN, Ecole Centrale de Paris, F92292 Chatenay Malabry (France); Behdad, S.; Boesl, B. [Department of Mechanical and Materials Engineering, Florida International University, Miami, FL 33174 (United States); Craciun, V., E-mail: valentin.craciun@inflpr.ro [Laser Department, National Institute for Laser, Plasma, and Radiation Physics, Bucharest-Magurele (Romania)

    2015-05-01

    Highlights: • Polycrystalline and hard ZrN films were grown by pulsed laser deposition technique. • The effect of 800 keV Ar ion irradiation on properties of ZrN films was investigated. • ZrN films irradiated with 10{sup 14} Ar ions/cm{sup 2}did not show major structural changes. • Irradiation with 10{sup 15} Ar ions/cm{sup 2} induced large structural and mechanical changes. - Abstract: Thin ZrN films (<500 nm) were grown on (1 0 0)Si substrates at a substrate temperature of 500 °C by the pulsed laser deposition (PLD) technique using a KrF excimer laser under CH{sub 4} or N{sub 2} atmosphere. Glancing incidence X-ray diffraction showed that films were nanocrystalline, while X-ray reflectivity studies indicated that the films were very dense and with a smooth surface. The films were used to study the effect of 800 keV Ar ion irradiation on their structure and properties. After irradiation with a dose of 10{sup 14} at/cm{sup 2} the lattice parameter and crystallites size did marginally change. However, after irradiation with a 10{sup 15} at/cm{sup 2} dose, a clear increase in the lattice parameter accompanied by a significant decrease in nanohardness and Young modulus were observed.

  13. Effect of source gas chemistry on tribological performance of diamond-like carbon films.

    Energy Technology Data Exchange (ETDEWEB)

    Erdemir, A.; Eryilmaz, O. L.; Fenske, G. R.; Nilufer, I. B.

    1999-08-23

    In this study, we investigated the effects of various source gases (i. e., methane, ethane, ethylene, acetylene and methane + hydrogen) on friction and wear performance of diamond-like carbon (DLC) films. Specifically, we described the anomalous nature and fundamental friction and wear mechanisms of DLC films derived from gas discharge plasmas with very low to very high hydrogen content. The films were deposited on steel substrates by a plasma enhanced chemical vapor deposition process at room temperature and the tribological tests were performed in dry nitrogen. The results of tribological tests revealed a close correlation between the friction and wear coefficients of the DLC films and the source gas chemistry. Specifically, films grown in source gases with higher hydrogen-to-carbon ratios had much lower friction coefficients and wear rates than the films derived from source gases with lower hydrogen-to-carbon ratios. The lowest friction coefficient (0.002) was achieved with a film derived from 25% methane--75% hydrogen while the films derived from acetylene had a coefficient of 0.15. Similar correlations were observed on wear rates. Specifically, the films derived from hydrogen rich plasmas had the least wear while the films derived from pure acetylene suffered the highest wear. We used a combination of scanning and transmission electron microscopy and Raman spectroscopy to characterize the structural chemistry of the resultant DLC films.

  14. Static and dynamic magnetic property of MBE-grown Co2FeAl films

    Science.gov (United States)

    Qiao, Shuang; Nie, Shuaihua; Huo, Yan; Zhao, Jianhua; Wu, Yizheng; Zhang, Xinhui

    2014-08-01

    In this work, the static and dynamic magnetic properties of Co2FeAl films grown by molecular beam epitaxy (MBE) were studied by employing the magneto-optical Kerr rotation and ferromagnetic resonance (FMR) measurements. The growth temperature dependent magnetocrystalline anisotropy of MBE-grown Co2FeAl films were first investigated by employing the rotating magneto-optical Kerr effect. Then the magnetization dynamics and Gilbert damping property for high quality Co2FeAl films were investigated in detail by combining both the FMR and time-resolved magneto-optical Kerr rotation techniques. The apparent damping parameter was found to show strong dependence on the strength of the applied magnetic field at low-field regime, but decrease drastically with increasing magnetic field and eventually become a constant value of 0.004 at high-field regime. The inhomogeneity of magnetocrystalline anisotropy and two-magnon scattering are suggested to be responsible for the observed abnormal damping properties observed especially at low field regime. The intrinsic damping parameter of 0.004 is deduced for our highly-ordered Co2FeAl film. Our results provide essential information for highly-ordered MBE-grown Co2FeA film and its possible application in spintronic devices.

  15. Quasi-Freestanding multilayer graphene films on the carbon face of SiC

    Energy Technology Data Exchange (ETDEWEB)

    Siegel, D. A.; Hwang, C. G.; Fedorov, A. V.; Lanzara, A.

    2010-06-30

    The electronic band structure of as-grown and doped graphene grown on the carbon face of SiC is studied by high-resolution angle-resolved photoemission spectroscopy, where we observe both rotations between adjacent layers and AB-stacking. The band structure of quasi-freestanding AB-bilayers is directly compared with bilayer graphene grown on the Si-face of SiC to study the impact of the substrate on the electronic properties of epitaxial graphene. Our results show that the C-face films are nearly freestanding from an electronic point of view, due to the rotations between graphene layers.

  16. Annealing effects of sapphire substrate on properties of ZnO films grown by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Y.Z. [South China Normal University, School of Physics and Telecommunication Engineering, Guangzhou (China); Xu, J. [Chinese Academy of Sciences, Shanghai Institute of Optics and Fine Mechanics, P.O. Box 800-211, Shanghai (China)

    2007-09-15

    The annealing effects of sapphire substrates on the quality of epitaxial ZnO films grown by dc reactive magnetron sputtering were studied. The atomic steps formed on (0001) sapphire ({alpha}-Al{sub 2}O{sub 3}) substrates surface by annealing at high temperature were analyzed by atomic force microscopy. Their influence on the growth of ZnO films was examined by X-ray diffraction and photoluminescence measurements. Experimental results indicate that the film quality is strongly affected by annealing treatment of the sapphire substrate surface. The optimum annealing temperature of sapphire substrates for ZnO grown by magnetron sputtering is 1400 C for 1 h in air. (orig.)

  17. Do CVD grown graphene films have antibacterial activity on metallic substrates?

    CERN Document Server

    Dellieu, Louis; Reckinger, Nicolas; Didembourg, Christian; Letesson, Jean-Jacques; Sarrazin, Michael; Deparis, Olivier; Matroule, Jean-Yves; Colomer, Jean-François

    2014-01-01

    Accurate assessment of the antibacterial activity of graphene requires consideration of both the graphene fabrication method and, for supported films, the properties of the substrate. Large-area graphene films produced by chemical vapor deposition were grown directly on copper substrates or transferred on a gold substrate and their effect on the viability and proliferation of the Gram-positive bacteria Staphylococcus aureus and the Gram-negative bacteria Escherichia coli were assessed. The viability and the proliferation of both bacterial species were not affected when they were grown on a graphene film entirely covering the gold substrate, indicating that conductivity plays no role on bacterial viability and graphene has no antibacterial activity against S. aureus and E. coli. On the other hand, antibacterial activity was observed when graphene coated the copper substrates, resulting from the release of bactericidal cupric ions in inverse proportion to the graphene surface coverage.

  18. Mechanically tunable magnetic properties of Fe81Ga19 films grown on flexible substrates

    Science.gov (United States)

    Dai, Guohong; Zhan, Qingfeng; Liu, Yiwei; Yang, Huali; Zhang, Xiaoshan; Chen, Bin; Li, Run-Wei

    2012-03-01

    We investigated on magnetic properties of magnetostrictive Fe81Ga19 films grown on flexible polyethylene terephthalate (PET) substrates under various mechanical strains. The unstrained Fe81Ga19 films exhibit a significant uniaxial magnetic anisotropy due to a residual stress in PET substrates. It was found that the squareness of hysteresis loops can be tuned by an application of strains, inward/compressive or outward/tensile bending of the films. A modified Stoner-Wohlfarth model with considering a distribution of easy axes in polycrystalline films was developed to account for the mechanically tunable magnetic properties in flexible Fe81Ga19 films. These results provide an alternative way to tune mechanically magnetic properties, which is particularly important for developing flexible magnetoelectronic devices.

  19. Multiple delta doping of single crystal cubic boron nitride films heteroepitaxially grown on (001)diamonds

    Energy Technology Data Exchange (ETDEWEB)

    Yin, H., E-mail: hyin@jlu.edu.cn [State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012 (China); Ziemann, P. [Institute of Solid State Physics, Ulm University, D-89069 Ulm (Germany)

    2014-06-23

    Phase pure cubic boron nitride (c-BN) films have been epitaxially grown on (001) diamond substrates at 900 °C. The n-type doping of c-BN epitaxial films relies on the sequential growth of nominally undoped (p-) and Si doped (n-) layers with well-controlled thickness (down to several nanometer range) in the concept of multiple delta doping. The existence of nominally undoped c-BN overgrowth separates the Si doped layers, preventing Si dopant segregation that was observed for continuously doped epitaxial c-BN films. This strategy allows doping of c-BN films can be scaled up to multiple numbers of doped layers through atomic level control of the interface in the future electronic devices. Enhanced electronic transport properties with higher hall mobility (10{sup 2} cm{sup 2}/V s) have been demonstrated at room temperature as compared to the normally continuously Si doped c-BN films.

  20. Amorphous indium gallium zinc oxide thin film grown by pulse laser deposition technique

    Science.gov (United States)

    Mistry, Bhaumik V.; Joshi, U. S.

    2016-05-01

    Highly electrically conducting and transparent in visible light IGZO thin film were grown on glass substrate at substrate temperature of 400 C by a pulse laser deposition techniques. Structural, surface, electrical, and optical properties of IGZO thin films were investigated at room temperature. Smooth surface morphology and amorphous nature of the film has been confirmed from the AFM and GIXRD analysis. A resistivity down to 7.7×10-3 V cm was reproducibly obtained while maintaining optical transmission exceeding 70% at wavelengths from 340 to 780 nm. The carrier densities of the film was obtain to the value 1.9×1018 cm3, while the Hall mobility of the IGZO thin film was 16 cm2 V-1S-1.

  1. Carbon Nanotube Thin-Film Antennas.

    Science.gov (United States)

    Puchades, Ivan; Rossi, Jamie E; Cress, Cory D; Naglich, Eric; Landi, Brian J

    2016-08-17

    Multiwalled carbon nanotube (MWCNT) and single-walled carbon nanotube (SWCNT) dipole antennas have been successfully designed, fabricated, and tested. Antennas of varying lengths were fabricated using flexible bulk MWCNT sheet material and evaluated to confirm the validity of a full-wave antenna design equation. The ∼20× improvement in electrical conductivity provided by chemically doped SWCNT thin films over MWCNT sheets presents an opportunity for the fabrication of thin-film antennas, leading to potentially simplified system integration and optical transparency. The resonance characteristics of a fabricated chlorosulfonic acid-doped SWCNT thin-film antenna demonstrate the feasibility of the technology and indicate that when the sheet resistance of the thin film is >40 ohm/sq no power is absorbed by the antenna and that a sheet resistance of antenna. The dependence of the return loss performance on the SWCNT sheet resistance is consistent with unbalanced metal, metal oxide, and other CNT-based thin-film antennas, and it provides a framework for which other thin-film antennas can be designed.

  2. Structural morphology of amorphous conducting carbon film

    Indian Academy of Sciences (India)

    P N Vishwakarma; V Prasad; S V Subramanyam; V Ganesan

    2005-10-01

    Amorphous conducting carbon films deposited over quartz substrates were analysed using X-ray diffraction and AFM technique. X-ray diffraction data reveal disorder and roughness in the plane of graphene sheet as compared to that of graphite. This roughness increases with decrease in preparation temperature. The AFM data shows surface roughness of carbon films depending on preparation temperatures. The surface roughness increases with decrease in preparation temperature. Also some nucleating islands were seen on the samples prepared at 900°C, which are not present on the films prepared at 700°C. Detailed analysis of these islands reveals distorted graphitic lattice arrangement. So we believe these islands to be nucleating graphitic. Power spectrum density (PSD) analysis of the carbon surface indicates a transition from the nonlinear growth mode to linear surface-diffusion dominated growth mode resulting in a relatively smoother surface as one moves from low preparation temperature to high preparation temperature. The amorphous carbon films deposited over a rough quartz substrate reveal nucleating diamond like structures. The density of these nucleating diamond like structures was found to be independent of substrate temperature (700–900°C).

  3. Structural and nonlinear optical properties of as-grown and annealed metallophthalocyanine thin films

    Energy Technology Data Exchange (ETDEWEB)

    Zawadzka, A., E-mail: azawa@fizyka.umk.pl [Institute of Physics, Faculty of Physics, Astronomy and Informatics, Nicolaus Copernicus University, Grudziadzka 5, 87-100 Torun (Poland); Płóciennik, P.; Strzelecki, J. [Institute of Physics, Faculty of Physics, Astronomy and Informatics, Nicolaus Copernicus University, Grudziadzka 5, 87-100 Torun (Poland); Pranaitis, M.; Dabos-Seignon, S.; Sahraoui, B. [LUNAM Université, Université d' Angers, CNRS UMR 6200, Laboratoire MOLTECH-Anjou, 2 bd Lavoisier, 49045 Angers cedex (France)

    2013-10-31

    The paper presents the Third Harmonic Generation investigation of four metallophtalocyanine (MPc, M = Cu, Co, Mg and Zn) thin films. The investigated films were fabricated by Physical Vapor Deposition in high vacuum onto quartz substrates. MPc thin films were annealed after fabrication in ambient atmosphere for 12 h at the temperature equal to 150 °C or 250 °C. The Third Harmonic Generation spectra were measured to investigate the nonlinear optical properties and their dependence on the structure of the thin film after the annealing process. This approach allowed us to determine the electronic contribution of the third-order nonlinear optical susceptibility χ{sup <3>}{sub elec} of these MPc films and to investigate two theoretical models for explanation of the observed results. We find that the annealing process significantly changes the optical and structural properties of MPc thin films. - Highlights: • Metallophtalocyanine thin films were grown by Physical Vapor Deposition technique. • MPcs thin films were undergone an annealing process in ambient atmosphere. • Third Harmonic spectra were measured to investigate nonlinear optical properties. • The third order nonlinear optical susceptibility χ{sup <3>}{sub elec} was determined. • We report changing both nonlinear optical and structural properties of thin films.

  4. Nanocrystalline thin films of CuInS2 grown by spray pyrolysis

    International Nuclear Information System (INIS)

    Nanocrystalline thin films of CuInS2 were grown on glass substrates using the spray pyrolysis technique. An aqueous mixture of solutions of CuCl2, InCl3 and CS(NH2)2 was converted into a fine colloidal solution by adding acetonitrile, and was then sprayed on to heated glass substrates, to produce the nanocrystalline films of CuInS2. The films were characterized using XRD, TEM, electron diffraction, SEM, EDAX, AFM and optical transmission spectra. AFM and TEM micrographs together with electron diffraction and XRD show that the films grown in the temperature range 275-325 deg. C are made up of single phase nano-sized (10-25 nm) particles of CuInS2. XRD calculations show that the crystallite size of the films ranges from 8 nm to about 15 nm. Optical absorption studies show that the band gap of the sprayed CuInS2 films is in the range 1.48-1.54 eV.

  5. Optical characterization of nanocrystalline boron nitride thin films grown by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Snure, Michael, E-mail: michael.snure.1@us.af.mil [Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH (United States); Paduano, Qing; Hamilton, Merle [Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH (United States); Shoaf, Jodie [Wyle Laboratories, Inc., Wright-Patterson AFB, OH (United States); Mann, J. Matthew [Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH (United States)

    2014-11-28

    Boron nitride thin films were grown on sapphire and Si substrates by atomic layer deposition from triethylborane (TEB) and NH{sub 3} precursors in the temperature range of 500 to 900 °C. By varying the TEB exposure the film thickness can be controlled with< 1 nm precision. At 600 °C the process is self-limiting, but films are found to be amorphous. Films grown at higher temperatures were identified as sp{sup 2} BN, but the process is no longer self-limiting. From Raman and IR absorption spectroscopy films deposited at 900 °C were identified as nanocrystalline sp{sup 2} BN with crystallite sizes in the range of 3 to 8 nm depending on the NH{sub 3} dosage. Films deposited at lower temperatures had broad red shifted IR absorption peaks indicating the lack of long range ordering. The visible and UV optical properties of these films were characterized by UV–Vis transmission measurements over the range of 800 to 190 nm. Nanocrystalline films are highly transparent over this range up to the band gap, which was measured to be in the range of 5.83 to 5.65 eV depending on the NH{sub 3} dosage. - Highlights: • Atomic layer deposition of BN with< 1 nm per cycle deposition rates • A narrow self-limiting temperature window was found. • Nanocrystalline h-BN films with a wide transparence window with E{sub g} up to 5.85 eV.

  6. Spectroscopic characterization of ZrO2 thin films grown by atomic layer deposition

    International Nuclear Information System (INIS)

    Zirconium dioxide films grown by atomic layer deposition from ZrCl4 and H2O at substrate temperatures of 500-870 K were characterized using spectroscopic methods. A significant influence of the phase composition on absorption and photoluminescence spectra was observed. The band-gap energies determined from absorption spectra of films with monoclinic structure grown at 670-870 K ranged from 5.25 to 5.28 eV. Low-temperature (10 K) photoexcitation of these films resulted in a non-elementary emission band with the maximum at 4.25-4.35 eV, tentatively assigned to the radiative decay of self-trapped excitons. The low-energy edges of the excitation spectra coincided with the edges of intrinsic absorption. A film that was grown at 500 K and contained tetragonal ZrO2 with large amounts of impurities had an absorption edge at 5.26 eV and wide emission band at 3.0 eV, which could be excited at as low photon energy as 4.9 eV. (author)

  7. Thermal stability of epitaxial Fe films grown on Si substrates by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Epitaxial Fe films are grown on Si(0 0 1) and Si(1 1 1) substrates by molecular beam epitaxy at room temperature. Several samples of one Fe/Si structure are subjected to rapid thermal annealing from 100 to 500 °C. The annealing impact on the morphological, magnetic properties and interfacial heterostructures of these samples is examined by atomic force microscopy, vibrating sample magnetometer and transmission electron microscopy, respectively. The results demonstrate that the material system Fe/Si grown at room temperature exhibits an abrupt interface and is thermally stable up to a temperature of 150 °C.

  8. Deep electron traps in CdTe:In films grown by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Zakrzewski, A.K.; Dobaczewski, L.; Karczewski, G.; Wojtowicz, T.; Kossut, J. [Institute of Physics, Polish Academy of Science, Warsaw (Poland)

    1995-12-31

    N-type indium CdTe grown on n{sup +}-GaAs molecular beam epitaxy has been studied by the standard deep level transient spectroscopy and the isothermal Laplace-transform deep level transient spectroscopy. It was found that the Cd/Te flux ratio strongly influences the deep level transient spectroscopy results. The unusual temperature dependence of the electron emission rate in films grown at nearly stoichiometric conditions may point out that the observed defect is resonant with the conduction band. (author). 5 refs, 1 fig.

  9. Surface morphology stabilization by chemical sputtering in carbon nitride film growth

    Energy Technology Data Exchange (ETDEWEB)

    Buijnsters, J G [Institute for Molecules and Materials (IMM), Radboud University Nijmegen, Toernooiveld 1, 6525 ED Nijmegen (Netherlands); Vazquez, L [Instituto de Ciencia de Materiales de Madrid (CSIC), C/Sor Juana Ines de la Cruz 3, 28049 Madrid (Spain)

    2008-01-07

    We have studied the influence of chemical sputtering effects on the morphology of carbon nitride films grown on silicon substrates by electron cyclotron resonance chemical vapour deposition. This study has been performed by comparing the evolution of their morphology with that of hydrogenated amorphous carbon films grown under similar conditions, where these effects are not present. When chemical sputtering effects operate we observe a film surface stabilization for length scales in the 60-750 nm range after a threshold roughness of about 3-4 nm has been developed. This stabilization is explained on the basis of the re-emission of nitrogen etching species, which is confirmed by growth experiments on microstructured substrates. (fast track communication)

  10. Swift heavy ion irradiation of metal containing tetrahedral amorphous carbon films

    Science.gov (United States)

    Karaseov, P. A.; Protopopova, V. S.; Karabeshkin, K. V.; Shubina, E. N.; Mishin, M. V.; Koskinen, J.; Mohapatra, S.; Tripathi, A.; Avasthi, D. K.; Titov, A. I.

    2016-07-01

    Thin carbon films were grown at room temperature on (0 0 1) n-Si substrate using dual cathode filtered vacuum arc deposition system. Graphite was used as a source of carbon atoms and separate metallic electrode was simultaneously utilized to introduce Ni or Cu atoms. Films were irradiated by 100 MeV Ag7+ ions to fluences in the range 1 × 1010-3 × 1011 cm-2. Rutherford backscattering spectroscopy, Raman scattering, scanning electron microscopy and atomic force microscopy in conductive mode were used to investigate film properties and structure change under irradiation. Some conductive channels having metallic conductivity type were found in the films. Number of such channels is less than number of impinged ions. Presence of Ni and Cu atoms increases conductivity of those conductive channels. Fluence dependence of all properties studied suggests different mechanisms of swift heavy ion irradiation-induced transformation of carbon matrix due to different chemical effect of nickel and copper atoms.

  11. Biocidal Silver and Silver/Titania Composite Films Grown by Chemical Vapour Deposition

    Directory of Open Access Journals (Sweden)

    D. W. Sheel

    2008-01-01

    Full Text Available This paper describes the growth and testing of highly active biocidal films based on photocatalytically active films of TiO2, grown by thermal CVD, functionally and structurally modified by deposition of nanostructured silver via a novel flame assisted combination CVD process. The resulting composite films are shown to be highly durable, highly photocatalytically active and are also shown to possess strong antibacterial behaviour. The deposition control, arising from the described approach, offers the potential to control the film nanostructure, which is proposed to be crucial in determining the photo and bioactivity of the combined film structure, and the transparency of the composite films. Furthermore, we show that the resultant films are active to a range of organisms, including Gram-negative and Gram-positive bacteria, and viruses. The very high-biocidal activity is above that expected from the concentrations of silver present, and this is discussed in terms of nanostructure of the titania/silver surface. These properties are especially significant when combined with the well-known durability of CVD deposited thin films, offering new opportunities for enhanced application in areas where biocidal surface functionality is sought.

  12. High-quality AlN films grown on chemical vapor-deposited graphene films

    Directory of Open Access Journals (Sweden)

    Chen Bin-Hao

    2016-01-01

    Full Text Available We report the growth of high-quality AlN films on graphene. The graphene films were synthesized by CVD and then transferred onto silicon substrates. Epitaxial aluminum nitride films were deposited by DC magnetron sputtering on both graphene as an intermediate layer and silicon as a substrate. The structural characteristics of the AlN films and graphene were investigated. Highly c-axis-oriented AlN crystal structures are investigated based on the XRDpatterns observations.

  13. High-quality AlN films grown on chemical vapor-deposited graphene films

    OpenAIRE

    Chen Bin-Hao; Hsu Hsiu-Hao; Lin David T.W.

    2016-01-01

    We report the growth of high-quality AlN films on graphene. The graphene films were synthesized by CVD and then transferred onto silicon substrates. Epitaxial aluminum nitride films were deposited by DC magnetron sputtering on both graphene as an intermediate layer and silicon as a substrate. The structural characteristics of the AlN films and graphene were investigated. Highly c-axis-oriented AlN crystal structures are investigated based on the XRDpatterns observations.

  14. Structural and morphological characterizations of ZnO films grown on GaAs substrates by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Agouram, S.; Zuniga Perez, J.; Munoz-Sanjose, V. [Universitat de Valencia, Departamento de Fisica Aplicada y Electromagnetismo, Burjassot (Spain)

    2007-07-15

    ZnO films were grown on GaAs(100), GaAs(111)A and GaAs(111)B substrates by metal organic chemical vapour deposition (MOCVD). Diethylzinc (DEZn) and tertiarybutanol (t-butanol) were used as Zn and O precursors, respectively. The influence of the growth temperature and GaAs substrate orientation on the crystalline orientation and morphology of the ZnO grown films has been analysed. Crystallinity of grown films was studied by X-ray diffraction (XRD); thickness and morphology of ZnO films were investigated by scanning electron microscopy (SEM). SEM results reveal significant differences between morphologies depending on growth temperature but not significant differences were detected on the texture of grown films. (orig.)

  15. Optical and Structural Properties of Nanocrystalline CdS Thin Films Grown by Chemical Bath Deposition

    International Nuclear Information System (INIS)

    Nanocrystalline cadmium sulfide thin films are prepared using chemical bath deposition (CBD) technique in aqueous alkaline bath at 60 degree Celsius and their subsequent condensation on glass substrates. Effects of annealing on structural, morphological and optical properties are presented and discussed. The best annealing temperature for CBD grown CdS films is found to be 350 degree Celsius from optical properties. The optical and structural properties of CdS films are found to be sensitive to annealing temperature and are described in terms of XRD, SEM, transmission spectra and optical studies. The structural parameters such as crystallite size have been evaluated through XRD while SEM micrographs exhibit ordering of grains after annealing. The transmission spectra shift towards higher wavelength upon annealing indicating increase in crystallinity. Annealing over 350 degree Celsius is found to degrade the external structure and optical properties of the film. (author)

  16. On detection of the Fermi edge in in situ grown thin films of high- Tc oxides

    Science.gov (United States)

    Abrecht, M.; Ariosa, D.; Saleh, S. A.; Rast, S.; Margaritondo, G.; Onellion, M.; Pavuna, D.

    2001-11-01

    We discuss our systematic series of experiments on the photoelectric detection of the Fermi edge using a cylindrical mirror analyser on films of high- Tc oxides, grown in situ by pulsed laser ablation. The Fermi edge (comparable to the edge of the reference Ag) is very easily observed even in the two-phase BSCCO-2212 film that exhibits onsets of superconducting transitions, at 85 and 45 K. In contrast, the Fermi edge is weaker and more difficult to observe even in the state-of-the-art, highly epitaxial, monophase YBa 2Cu 3O 7- y (YBCO) and NdBa 2Cu 3O 7- y (NBCO-123) films (both with Tc=92 K). So far we could not detect the Fermi edge in the films of the double-`chain' YBCO-124.

  17. Structural, optical and electrochromic properties of nickel oxide thin films grown from electrodeposited nickel sulphide

    International Nuclear Information System (INIS)

    Nickel oxide thin films were grown onto FTO-coated glass substrates by a two-step process: electrodeposition of nickel sulphide and their thermal oxidation at 425, 475 and 525 deg. C. The influence of thermal oxidation temperature on structural, optical, morphological and electrochromic properties was studied. The structural properties undoubtedly revealed NiO formation. The electrochromic properties were studied by means of cyclic voltammetry. The films exhibited anodic electrochromism, changing from a transparent state to a coloured state at +0.75 V versus SCE, i.e. by simultaneous ion and electron ejection. The transmittance in the coloured and bleached states was recorded to access electrochromic quality of the films. Colouration efficiency and electrochromic reversibility were found to be maximum (21 mC/cm2 and 89%, respectively) for the films oxidized at 425 deg. C. The optical band gap energy of nickel oxide slightly varies with increase in annealing temperature

  18. Structural, optical and electrochromic properties of nickel oxide thin films grown from electrodeposited nickel sulphide

    Energy Technology Data Exchange (ETDEWEB)

    Uplane, M.M.; Mujawar, S.H.; Inamdar, A.I.; Shinde, P.S.; Sonavane, A.C. [Thin Film Materials Laboratory, Department of Physics, Shivaji University, Kolhapur 416004, Maharashtra (India); Patil, P.S. [Thin Film Materials Laboratory, Department of Physics, Shivaji University, Kolhapur 416004, Maharashtra (India)], E-mail: psp_phy@unishivaji.ac.in

    2007-10-15

    Nickel oxide thin films were grown onto FTO-coated glass substrates by a two-step process: electrodeposition of nickel sulphide and their thermal oxidation at 425, 475 and 525 deg. C. The influence of thermal oxidation temperature on structural, optical, morphological and electrochromic properties was studied. The structural properties undoubtedly revealed NiO formation. The electrochromic properties were studied by means of cyclic voltammetry. The films exhibited anodic electrochromism, changing from a transparent state to a coloured state at +0.75 V versus SCE, i.e. by simultaneous ion and electron ejection. The transmittance in the coloured and bleached states was recorded to access electrochromic quality of the films. Colouration efficiency and electrochromic reversibility were found to be maximum (21 mC/cm{sup 2} and 89%, respectively) for the films oxidized at 425 deg. C. The optical band gap energy of nickel oxide slightly varies with increase in annealing temperature.

  19. Structural, optical and electrochromic properties of nickel oxide thin films grown from electrodeposited nickel sulphide

    Science.gov (United States)

    Uplane, M. M.; Mujawar, S. H.; Inamdar, A. I.; Shinde, P. S.; Sonavane, A. C.; Patil, P. S.

    2007-10-01

    Nickel oxide thin films were grown onto FTO-coated glass substrates by a two-step process: electrodeposition of nickel sulphide and their thermal oxidation at 425, 475 and 525 °C. The influence of thermal oxidation temperature on structural, optical, morphological and electrochromic properties was studied. The structural properties undoubtedly revealed NiO formation. The electrochromic properties were studied by means of cyclic voltammetry. The films exhibited anodic electrochromism, changing from a transparent state to a coloured state at +0.75 V versus SCE, i.e. by simultaneous ion and electron ejection. The transmittance in the coloured and bleached states was recorded to access electrochromic quality of the films. Colouration efficiency and electrochromic reversibility were found to be maximum (21 mC/cm 2 and 89%, respectively) for the films oxidized at 425 °C. The optical band gap energy of nickel oxide slightly varies with increase in annealing temperature.

  20. N-Type Conductive Ultrananocrystalline Diamond Films Grown by Hot Filament CVD

    Directory of Open Access Journals (Sweden)

    Michael Mertens

    2015-01-01

    Full Text Available We present the synthesis of ultrananocrystalline diamond (UNCD films by application of hot filament chemical vapor deposition (HFCVD. We furthermore studied the different morphological, structural, and electrical properties. The grown films are fine grained with grain sizes between 4 and 7 nm. The UNCD films exhibit different electrical conductivities, dependent on grain boundary structure. We present different contact metallizations exhibiting ohmic contact behavior and good adhesion to the UNCD surface. The temperature dependence of the electrical conductivity is presented between −200 and 900°C. We furthermore present spectroscopic investigations of the films, supporting that the origin of the conductivity is the structure and volume of the grain boundary.

  1. Temperature dependent photoluminescence characteristics of nanocrystalline ZnO films grown by sol-gel technique

    Energy Technology Data Exchange (ETDEWEB)

    Mandal, S.; Goswami, M.L.N.; Das, K.; Dhar, A. [Department of Physics and Meteorology, IIT Kharagpur 721 302 (India); Ray, S.K. [Department of Physics and Meteorology, IIT Kharagpur 721 302 (India)], E-mail: physkr@phy.iitkgp.ernet.in

    2008-10-01

    The structural as well as optical properties of nanocrystalline ZnO films, with hexagonal shaped particles of size 30-35 nm grown on p-Si (100) substrates by sol-gel technique, are investigated. Selected-area electron diffraction and X-ray diffraction patterns of annealed films reveal the formation of wurtzite structure. The mechanism of ultraviolet (UV) and green emission from ZnO thin films, post-annealed at various temperatures, is investigated using photoluminescence spectra. The oxygen content in annealed ZnO films plays an important role to suppress the green band emission. Temperature dependent photoluminescence spectra are recorded in the temperature range 10 K to 300 K to investigate different excitonic peaks in the UV-region.

  2. Adsorption properties of Mg-Al layered double hydroxides thin films grown by laser based techniques

    Energy Technology Data Exchange (ETDEWEB)

    Matei, A., E-mail: andreeapurice@nipne.ro [National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Str., 77125 Bucharest, Magurele (Romania); Birjega, R.; Vlad, A.; Filipescu, M.; Nedelcea, A.; Luculescu, C. [National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Str., 77125 Bucharest, Magurele (Romania); Zavoianu, R.; Pavel, O.D. [University of Bucharest, Faculty of Chemistry, Department of Chemical Technology and Catalysis, 4-12 Regina Elisabeta Bd., Bucharest (Romania); Dinescu, M. [National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Str., 77125 Bucharest, Magurele (Romania)

    2012-09-15

    Highlights: Black-Right-Pointing-Pointer Laser techniques MAPLE and PLD can successfully be used to produce LDHs thin films. Black-Right-Pointing-Pointer Hydration treatments of the PLD and MAPLE deposited films lead to the LDH reconstruction effect. Black-Right-Pointing-Pointer The Ni retention from aqueous solution occurs in the films via a dissolution-reconstruction mechanism. Black-Right-Pointing-Pointer The films are suitable for applications in remediation of contaminated drinking water or waste waters. - Abstract: Powdered layered double hydroxides (LDHs) have been widely studied due to their applications as catalysts, anionic exchangers or host materials for inorganic and/or organic molecules. Assembling nano-sized LDHs onto flat solid substrates forming thin films is an expanding area of research due to the prospects of novel applications as sensors, corrosion-resistant coatings, components in optical and magnetic devices. Continuous and adherent thin films were grown by laser techniques (pulsed laser deposition - PLD and matrix assisted pulsed laser evaporation - MAPLE) starting from targets of Mg-Al LDHs. The capacity of the grown thin films to retain a metal (Ni) from contaminated water has been also explored. The thin films were immersed in an Ni(NO{sub 3}){sub 2} aqueous solutions with Ni concentrations of 10{sup -3}% (w/w) (1 g/L) and 10{sup -4}% (w/w) (0.1 g/L), respectively. X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM) combined with energy dispersive X-ray analysis (EDX) were the techniques used to characterize the prepared materials.

  3. Yttria and ceria doped zirconia thin films grown by pulsed laser deposition

    Directory of Open Access Journals (Sweden)

    F. Saporiti

    2013-06-01

    Full Text Available The Yttria stabilized Zirconia (YSZ is a standard electrolyte for solid oxide fuel cells (SOFCs, which are potential candidates for next generation portable and mobile power sources. YSZ electrolyte thin films having a cubic single phase allow reducing the SOFC operating temperature without diminishing the electrochemical power density. Films of 8 mol% Yttria stabilized Zirconia (8YSZ and films with addition of 4 weight% Ceria (8YSZ + 4CeO2 were grown by pulsed laser deposition (PLD technique using 8YSZ and 8YSZ + 4CeO2 targets and a Nd-YAG laser (355 nm. Films have been deposited on Soda-Calcia-Silica glass and Si(100 substrates at room temperature. The morphology and structural characteristics of the samples have been studied by means of X-ray diffraction and scanning electron microscopy. Films of a cubic-YSZ single phase with thickness in the range of 1-3 µm were grown on different substrates.

  4. Effect of deposition temperature on the properties of sputtered YIG films grown on quartz

    International Nuclear Information System (INIS)

    Yttrium Iron Garnet (YIG), Y3Fe5O12, is an oxide material that has potential applications in the magneto-optical recording media and microwave device industries. These materials, when synthesized in thin film form, usually require post-deposition annealing in order to enhance their physical properties. Furthermore, integration of YIG based optical components requires the synthesis of high quality YIG material on quartz, a process that may be problematic due to poor adhesion and lattice mismatch. Thus, we have conducted a study on the effect of deposition temperature (from 25 to 800 deg. C) and post-deposition annealing (at 740 deg. C) on the crystalline quality and chemical composition of YIG thin films, grown by radio-frequency magnetron sputtering, on quartz substrates. X-ray diffraction (XRD) shows that as-grown layers are amorphous, and subsequent annealing is necessary to induce film crystallization. Rutherford backscattering spectrometry analyses were also conducted and the chemical composition of the films was found to depend on initial deposition temperature and is affected by post-deposition anneals. Comparison of the XRD and RBS results point out to the existence of an optimal deposition temperature at about 700 deg. C for the formation of high crystalline quality and stoichiometric YIG thin films. Magnetic measurements were found to correlate to the XRD and RBS analyses.

  5. Yttria and ceria doped zirconia thin films grown by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Saporiti, F.; Juarez, R. E., E-mail: cididi@fi.uba.ar [Grupo de Materiales Avanzados, Facultad de Ingenieria, Universidad de Buenos Aires (Argentina); Audebert, F. [Consejo Nacional de Investigaciones Cientificas y Tecnicas (CONICET) (Argentina); Boudard, M. [Laboratoire des Materiaux et du Genie Physique (CNRS), Grenoble (France)

    2013-11-01

    The Yttria stabilized Zirconia (YSZ) is a standard electrolyte for solid oxide fuel cells (SOFCs), which are potential candidates for next generation portable and mobile power sources. YSZ electrolyte thin films having a cubic single phase allow reducing the SOFC operating temperature without diminishing the electrochemical power density. Films of 8 mol% Yttria stabilized Zirconia (8YSZ) and films with addition of 4 weight% Ceria (8YSZ + 4CeO{sub 2}) were grown by pulsed laser deposition (PLD) technique using 8YSZ and 8YSZ + 4CeO{sub 2} targets and a Nd-YAG laser (355 nm). Films have been deposited on Soda-Calcia-Silica glass and Si(100) substrates at room temperature. The morphology and structural characteristics of the samples have been studied by means of X-ray diffraction and scanning electron microscopy. Films of a cubic-YSZ single phase with thickness in the range of 1-3 Micro-Sign m were grown on different substrates (author)

  6. Group III-nitride thin films grown using MBE and bismuth

    Science.gov (United States)

    Kisielowski, Christian K.; Rubin, Michael

    2000-01-01

    The present invention comprises growing gallium nitride films in the presence of bismuth using MBE at temperatures of about 1000 K or less. The present invention further comprises the gallium nitride films fabricated using the inventive fabrication method. The inventive films may be doped with magnesium or other dopants. The gallium nitride films were grown on sapphire substrates using a hollow anode Constricted Glow Discharge nitrogen plasma source. When bismuth was used as a surfactant, two-dimensional gallium nitride crystal sizes ranging between 10 .mu.m and 20 .mu.m were observed. This is 20 to 40 times larger than crystal sizes observed when GaN films were grown under similar circumstances but without bismuth. It is thought that the observed increase in crystal size is due bismuth inducing an increased surface diffusion coefficient for gallium. The calculated value of 4.7.times.10.sup.-7 cm.sup.2 /sec. reveals a virtual substrate temperature of 1258 K which is 260 degrees higher than the actual one.

  7. One-dimensional edge state of Bi thin film grown on Si(111)

    Energy Technology Data Exchange (ETDEWEB)

    Kawakami, Naoya; Lin, Chun-Liang; Kawai, Maki; Takagi, Noriaki [Department of Advanced Materials Science, Graduate School of Frontier Science, The University of Tokyo, Kashiwa 5-1-5, Chiba 277-8561 (Japan); Arafune, Ryuichi [International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science, 1-1 Namiki, Ibaraki 305-0044 (Japan)

    2015-07-20

    The geometric and electronic structures of the Bi thin film grown on Si(111) were investigated by using scanning tunneling microscopy and spectroscopy. We have found two types of edges, one of which hosts an electronic state localized one-dimensionally. We also revealed the energy dispersion of the localized edge state from the evolution of quasiparticle interference patterns as a function of energy. These spectroscopic findings well reproduce those acquired for the cleaved surface of the bulk Bi crystal [I. K. Drozdov et al., Nat. Phys. 10, 664 (2014)]. The present results indicate that the deposited Bi film provides a tractable stage for further scrutiny of the one-dimensional edge state.

  8. Non-destructive characterization of films grown on Zircaloy-2 by annealing in air

    Energy Technology Data Exchange (ETDEWEB)

    McNatt, J.S.; Shepard, M.J.; Farkas, N.; Morgan, J.M.; Ramsier, R.D. [Departments of Physics, Chemistry, and Chemical Engineering, University of Akron, Akron, OH (United States)]. E-mail: rex@uakron.edu

    2002-08-07

    Zircaloy-2 is often used in engineering applications because of its corrosion resistance; a property attributable to a protective oxide film that grows on its surface. Variable angle infrared (IR) reflection spectroscopy and atomic force microscopy are used to determine the thickness and roughness of such films grown thermally on Zircaloy-2 surfaces in air. We find cubic growth kinetics in the temperature range 500-600 deg. C with an apparent activation energy of 227 kJ mol{sup -1}. We also demonstrate how an increase in microscopic surface roughness at higher temperatures correlates with a loss of oxide homogeneity as sampled by the IR method. (author)

  9. Solution-Grown Monocrystalline Hybrid Perovskite Films for Hole-Transporter-Free Solar Cells

    KAUST Repository

    Peng, Wei

    2016-03-02

    High-quality perovskite monocrystalline films are successfully grown through cavitation-triggered asymmetric crystallization. These films enable a simple cell structure, ITO/CH3NH3PbBr3/Au, with near 100% internal quantum efficiency, promising power conversion efficiencies (PCEs) >5%, and superior stability for prototype cells. Furthermore, the monocrystalline devices using a hole-transporter-free structure yield PCEs ≈6.5%, the highest among other similar-structured CH3NH3PbBr3 solar cells to date.

  10. Irradiation induced improvement in crystallinity of epitaxially grown Ag thin films on Si substrates

    Energy Technology Data Exchange (ETDEWEB)

    Takahiro, Katsumi; Nagata, Shinji; Yamaguchi, Sadae [Tohoku Univ., Sendai (Japan). Inst. for Materials Research

    1997-03-01

    We report the improvement in crystallinity of epitaxially grown Ag films on Si(100) substrates with ion irradiation. The irradiation of 0.5 MeV Si ions to 2x10{sup 16}/cm{sup 2} at 200degC, for example, reduces the channeling minimum yield from 60% to 6% at Ag surface. The improvement originates from the decrease of mosaic spread in the Ag thin film. In our experiments, ion energy, ion species and irradiation temperature have been varied. The better crystallinity is obtained as the higher concentration of defect is generated. The mechanism involved in the irradiation induced improvement is discussed. (author)

  11. Thin films of copper oxide and copper grown by atomic layer deposition for applications in metallization systems of microelectronic devices

    Energy Technology Data Exchange (ETDEWEB)

    Waechtler, Thomas

    2010-05-25

    Copper-based multi-level metallization systems in today's ultralarge-scale integrated electronic circuits require the fabrication of diffusion barriers and conductive seed layers for the electrochemical metal deposition. Such films of only several nanometers in thickness have to be deposited void-free and conformal in patterned dielectrics. The envisaged further reduction of the geometric dimensions of the interconnect system calls for coating techniques that circumvent the drawbacks of the well-established physical vapor deposition. The atomic layer deposition method (ALD) allows depositing films on the nanometer scale conformally both on three-dimensional objects as well as on large-area substrates. The present work therefore is concerned with the development of an ALD process to grow copper oxide films based on the metal-organic precursor bis(trin- butylphosphane)copper(I)acetylacetonate [({sup n}Bu{sub 3}P){sub 2}Cu(acac)]. This liquid, non-fluorinated {beta}-diketonate is brought to react with a mixture of water vapor and oxygen at temperatures from 100 to 160 C. Typical ALD-like growth behavior arises between 100 and 130 C, depending on the respective substrate used. On tantalum nitride and silicon dioxide substrates, smooth films and selfsaturating film growth, typical for ALD, are obtained. On ruthenium substrates, positive deposition results are obtained as well. However, a considerable intermixing of the ALD copper oxide with the underlying films takes place. Tantalum substrates lead to a fast self-decomposition of the copper precursor. As a consequence, isolated nuclei or larger particles are always obtained together with continuous films. The copper oxide films grown by ALD can be reduced to copper by vapor-phase processes. If formic acid is used as the reducing agent, these processes can already be carried out at similar temperatures as the ALD, so that agglomeration of the films is largely avoided. Also for an integration with subsequent

  12. Residual stress in AlN films grown on sapphire substrates by molecular beam epitaxy

    Science.gov (United States)

    Rong, Xin; Wang, Xinqiang; Chen, Guang; Pan, Jianhai; Wang, Ping; Liu, Huapeng; Xu, Fujun; Tan, Pingheng; Shen, Bo

    2016-05-01

    Residual stress in AlN films grown by molecular beam epitaxy (MBE) has been studied by Raman scattering spectroscopy. A strain-free Raman frequency and a biaxial stress coefficient for E2(high) mode are experimentally determined to be 657.8 ± 0.3 cm-1 and 2.4 ± 0.2 cm-1 / GPa, respectively. By using these parameters, the residual stress of a series of AlN layers grown under different buffer layer conditions has been investigated. The residual compressive stress is found to be obviously decreased by increasing the Al/N beam flux ratio of the buffer layer, indicating the generation of tensile stress due to stronger coalescence of AlN grains, as also confirmed by the in-situ reflection high energy electron diffraction (RHEED) monitoring observation. The stronger coalescence does lead to improved quality of AlN films as expected.

  13. Carrier dynamics in ZnxCd1-xO films grown by molecular beam epitaxy

    Science.gov (United States)

    Cheng, F. J.; Lee, Y. C.; Hu, S. Y.; Lin, Y. C.; Tiong, K. K.; Chou, W. C.

    2016-05-01

    In this work, the carrier dynamics in Zn1-xCdxO thin films with different Cd contents grown by molecular beam epitaxy system have been investigated using photoluminescence and time-resolved photoluminescence measurements. The carrier lifetime can be estimated from the PL decay curve fitted by triple exponential function. The emission energy dependence and temperature dependence of the PL decay time indicate that carrier localization dominate the luminescence mechanism of the ZnCdO alloy semiconductor.

  14. Chemical vapor deposition of high quality graphene films from carbon dioxide atmospheres.

    Science.gov (United States)

    Strudwick, Andrew James; Weber, Nils Eike; Schwab, Matthias Georg; Kettner, Michel; Weitz, R Thomas; Wünsch, Josef R; Müllen, Klaus; Sachdev, Hermann

    2015-01-27

    The realization of graphene-based, next-generation electronic applications essentially depends on a reproducible, large-scale production of graphene films via chemical vapor deposition (CVD). We demonstrate how key challenges such as uniformity and homogeneity of the copper metal substrate as well as the growth chemistry can be improved by the use of carbon dioxide and carbon dioxide enriched gas atmospheres. Our approach enables graphene film production protocols free of elemental hydrogen and provides graphene layers of superior quality compared to samples produced by conventional hydrogen/methane based CVD processes. The substrates and resulting graphene films were characterized by scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX) and Raman microscopy, sheet resistance and transport measurements. The superior quality of the as-grown graphene films on copper is indicated by Raman maps revealing average G band widths as low as 18 ± 8 cm(-1) at 514.5 nm excitation. In addition, high charge carrier mobilities of up to 1975 cm(2)/(V s) were observed for electrons in transferred films obtained from a carbon dioxide based growth protocol. The enhanced graphene film quality can be explained by the mild oxidation properties of carbon dioxide, which at high temperatures enables an uniform conditioning of the substrates by an efficient removal of pre-existing and emerging carbon impurities and a continuous suppression and in situ etching of carbon of lesser quality being co-deposited during the CVD growth. PMID:25398132

  15. Auger and photoluminescence analysis of ZnO nanowires grown on AlN thin film

    Energy Technology Data Exchange (ETDEWEB)

    Yousefi, Ramin, E-mail: yousefi.ramin@gmail.com [Solid State Laboratory, Department of Physics, University of Malaya, 50603 Kuala Lumpur (Malaysia); Kamaluddin, Burhanuddin [Solid State Laboratory, Department of Physics, University of Malaya, 50603 Kuala Lumpur (Malaysia); Ghoranneviss, Mahmood; Hajakbari, Fatemeh [Plasma Physics Research Center, Science and Research Campus, Islamic Azad University, 14665-678 Tehran (Iran, Islamic Republic of)

    2009-05-15

    ZnO nanowires were grown on AlN thin film deposited on the glass substrates using a physical vapor deposition method in a conventional tube furnace without introducing any catalysts. The temperature of the substrates was maintained between 500 and 600 deg. C during the growth process. The typical average diameters of the obtained nanowires on substrate at 600 and 500 deg. C were about 57 and 22 nm respectively with several micrometers in length. X-ray diffraction and Auger spectroscopy results showed Al diffused from AlN thin film into the ZnO nanowires for the sample grown at 600 deg. C. Photoluminescence of the nanowires exhibits appearance of two emission bands, one related to ultraviolet emission with a strong peak at 380-382 nm, and the other related to deep level emission with a weak peak at 503-505 nm. The ultraviolet peak of the nanowires grown at 500 deg. C was blue shifted by 2 nm compared to those grown at 600 deg. C. This shift could be attributed to surface effect.

  16. Characterization of interference thin films grown on stainless steel surface by alternate pulse current in a sulphochromic solution

    Directory of Open Access Journals (Sweden)

    Rosa Maria Rabelo Junqueira

    2008-12-01

    Full Text Available The aim of this work was to characterize thin interference films grown on the surface of AISI 304 stainless steel for decorative purposes. Films were grown in a sulphochromic solution at room temperature by an alternating pulse current method. The morphology and chemical state of the elements in the films were investigated by field emission scanning electron microscopy (FESEM, atomic force microscopy (AFM, glow discharge optical emission spectrometry (GDOES, and infrared Fourier transform spectroscopy (FTIR. Depth-sensing indentation (DSI experiments and wear abrasion tests were employed to assess the mechanical resistance of the films. The coloration process resulted in porous thin films which increased the surface roughness of the substrate. The interference films mainly consisted of hydrated chromium oxide containing iron. Increasing film thickness produced different colors and affected the mechanical properties of the coating-substrate system. Thicker films, such as those producing gold and green colors, were softer but more abrasion resistant.

  17. Dysprosium oxide and dysprosium-oxide-doped titanium oxide thin films grown by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Tamm, Aile, E-mail: aile.tamm@ut.ee; Kozlova, Jekaterina; Aarik, Lauri; Aarik, Jaan [Institute of Physics, University of Tartu, Ravila 14c, EE-50411 Tartu (Estonia); Kukli, Kaupo [University of Helsinki, FI-00014 Helsinki (Finland); Link, Joosep; Stern, Raivo [National Institute of Chemical Physics and Biophysics, Akadeemia tee 23, EE-12618 Tallinn (Estonia)

    2015-01-15

    Dysprosium oxide and dysprosium-oxide-doped titanium oxide thin films were grown by atomic layer deposition on silicon substrates. For depositing dysprosium and titanium oxides Dy(thd){sub 3}-O{sub 3} and TiCl{sub 4}-O{sub 3} were used as precursors combinations. Appropriate parameters for Dy(thd){sub 3}-O{sub 3} growth process were obtained by using a quartz crystal microbalance system. The Dy{sub 2}O{sub 3} films were deposited on planar substrates and on three-dimensional substrates with aspect ratio 1:20. The Dy/Ti ratio of Dy{sub 2}O{sub 3}-doped TiO{sub 2} films deposited on a planar silicon substrate ranged from 0.04 to 0.06. Magnetometry studies revealed that saturation of magnetization could not be observed in planar Dy{sub 2}O{sub 3} films, but it was observable in Dy{sub 2}O{sub 3} films on 3D substrates and in doped TiO{sub 2} films with a Dy/Ti atomic ratio of 0.06. The latter films exhibited saturation magnetization 10{sup −6} A cm{sup 2} and coercivity 11 kA/m at room temperature.

  18. Superconductive niobium films coating carbon nanotube fibers

    Science.gov (United States)

    Salvato, M.; Lucci, M.; Ottaviani, I.; Cirillo, M.; Behabtu, N.; Young, C. C.; Pasquali, M.; Vecchione, A.; Fittipaldi, R.; Corato, V.

    2014-11-01

    Superconducting niobium (Nb) has been successfully obtained by sputter deposition on carbon nanotube fibers. The transport properties of the niobium coating the fibers are compared to those of niobium thin films deposited on oxidized Si substrates during the same deposition run. For niobium films with thicknesses above 300 nm, the niobium coating the fibers and the thin films show similar normal state and superconducting properties with critical current density, measured at T = 4.2 K, of the order of 105 A cm-2. Thinner niobium layers coating the fibers also show the onset of the superconducting transition in the resistivity versus temperature dependence, but zero resistance is not observed down to T = 1 K. We evidence by scanning electron microscopy (SEM) and current-voltage measurements that the granular structure of the samples is the main reason for the lack of true global superconductivity for thicknesses below 300 nm.

  19. Superconductive niobium films coating carbon nanotube fibers

    International Nuclear Information System (INIS)

    Superconducting niobium (Nb) has been successfully obtained by sputter deposition on carbon nanotube fibers. The transport properties of the niobium coating the fibers are compared to those of niobium thin films deposited on oxidized Si substrates during the same deposition run. For niobium films with thicknesses above 300 nm, the niobium coating the fibers and the thin films show similar normal state and superconducting properties with critical current density, measured at T = 4.2 K, of the order of 105 A cm−2. Thinner niobium layers coating the fibers also show the onset of the superconducting transition in the resistivity versus temperature dependence, but zero resistance is not observed down to T = 1 K. We evidence by scanning electron microscopy (SEM) and current-voltage measurements that the granular structure of the samples is the main reason for the lack of true global superconductivity for thicknesses below 300 nm. (paper)

  20. Buckling instability in amorphous carbon films

    Science.gov (United States)

    Zhu, X. D.; Narumi, K.; Naramoto, H.

    2007-06-01

    In this paper, we report the buckling instability in amorphous carbon films on mirror-polished sapphire (0001) wafers deposited by ion beam assisted deposition at various growth temperatures. For the films deposited at 150 °C, many interesting stress relief patterns are found, which include networks, blisters, sinusoidal patterns with π-shape, and highly ordered sinusoidal waves on a large scale. Starting at irregular buckling in the centre, the latter propagate towards the outer buckling region. The maximum length of these ordered patterns reaches 396 µm with a height of ~500 nm and a wavelength of ~8.2 µm. However, the length decreases dramatically to 70 µm as the deposition temperature is increased to 550 °C. The delamination of the film appears instead of sinusoidal waves with a further increase of the deposition temperature. This experimental observation is correlated with the theoretic work of Crosby (1999 Phys. Rev. E 59 R2542).

  1. Carrier transport in undoped CdO films grown by atmospheric-pressure chemical vapor deposition

    International Nuclear Information System (INIS)

    Temperature dependent Hall effect measurements were performed for the undoped CdO films with carrier concentrations (n) ranging from 2.4 × 1019 to 2.0 × 1020 cm−3 grown on c- and r-plane sapphire substrates by the atmospheric-pressure chemical vapor deposition using Cd powder and H2O as source materials. The n dependence of the optical gap energy (Eopt) could be explained by the combination of the band gap widening due to Burstein–Moss shift and the band gap shrinkages due to the electron–electron and electron–impurity interactions. For all the films, the carrier concentrations (n) were independent of measurement temperature (T), indicating that these films were n-type degenerate semiconductors. The barrier heights at grain boundaries determined from the 1000/T-ln(μT) curves were smaller than the thermal energy at 300 K, suggesting that the grain boundary scattering plays a minor role on the carrier transport in comparison with the intra-grain scattering. The n dependence of the gradient of the μ–T curve revealed the continuous transformation of the dominant intra-grain scattering mechanism from the phonon scattering to the ionized impurity scattering with increasing n. - Highlights: • Undoped CdO films were grown on c- and r-plane sapphire substrates by CVD. • Hall effect measurements were performed for the CdO films at 83–343 K. • For many CdO films, the carrier concentration n was independent of temperature. • The grain boundary scattering plays a minor role in the CdO films. • The dominant intra-grain scattering exhibited the continuous change with n

  2. Low-temperature grown graphene films by using molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Meng-Yu [Institute of Electronics, National Taiwan University, Taipei, Taiwan (China); Research Center for Applied Sciences, Academia Sinica, Nankang, Taipei, Taiwan (China); Guo, Wei-Ching; Wang, Pro-Yao [Institute of Optoelectronic Sciences, National Taiwan Ocean University, Keelung, Taiwan (China); Wu, Meng-Hsun [College of Photonics, National Chiao-Tung University, Tainan, Taiwan (China); Liu, Te-Huan; Chang, Chien-Cheng [Institute of Applied Mechanics, National Taiwan University, Taipei, Taiwan (China); Pao, Chun-Wei; Lin, Shih-Yen [Research Center for Applied Sciences, Academia Sinica, Nankang, Taipei, Taiwan (China); Lee, Si-Chen [Institute of Electronics, National Taiwan University, Taipei, Taiwan (China)

    2012-11-26

    Complete graphene film is prepared by depositing carbon atoms directly on Cu foils in a molecular beam epitaxy chamber at 300 Degree-Sign C. The Raman spectrum of the film has indicated that high-quality few-layer graphene is obtained. With back-gated transistor architecture, the characteristic current modulation of graphene transistors is observed. Following the similar growth procedure, graphitization is observed at room temperature, which is consistent with the molecular dynamics simulations of graphene growth.

  3. Influence of solution viscosity on hydrothermally grown ZnO thin films for DSSC applications

    Science.gov (United States)

    Marimuthu, T.; Anandhan, N.; Thangamuthu, R.; Surya, S.

    2016-10-01

    Zinc oxide (ZnO) nanowire arrays (NWAs) were grown onto zinc oxide-titanium dioxide (ZnO-TiO2) seeded fluorine doped tin oxide (FTO) conductive substrate by hydrothermal technique. X-ray diffraction (XRD) patterns depict that ZnO thin films are preferentially oriented along the (002) plane with hexagonal wurtzite structure. Viscosity measurements reveal that viscosity of the solutions linearly increases as the concentrations of the polyvinyl alcohol (PVA) increase in the growth solution. Field emission scanning electron microscope (FE-SEM) images show that the NWAs are vertically grown to seeded FTO substrate with hexagonal structure, and the growth of NWAs decreases as the concentration of the PVA increases. Stylus profilometer and atomic force microscopic (AFM) studies predict that the thickness and roughness of the films decrease with increasing the PVA concentrations. The NWAs prepared at 0.1% of PVA exhibits a lower transmittance and higher absorbance than that of the other films. The band gap of the optimized films prepared at 0.0 and 0.1% of PVA is found to be 3.270 and 3.268 eV, respectively. The photo to current conversion efficiency of the DSSC based on photoanodes prepared at 0.0 and 0.1% of PVA exhibits about 0.64 and 0.82%, respectively. Electrochemical impedance spectra reveal that the DSSC based on photoanode prepared at 0.1% of PVA has the highest charge transfer recombination resistance.

  4. Surface state conductivity in epitaxially grown Bi1-x Sb x (111) films

    Science.gov (United States)

    Koch, Julian; Kröger, Philipp; Pfnür, Herbert; Tegenkamp, Christoph

    2016-09-01

    Topologically non-trivial surface states were reported first on {{Bi}}1-xSb x bulk crystals. In this study we present transport measurements performed on thin {{Bi}}1-xSb x -films (up to 24 nm thickness) grown epitaxially on Si(111) with various Sb-concentrations (up to x = 0.22). The analysis of the temperature dependency allowed us to distinguish between different transport channels originating from surface and bulk bands as well as impurity states. At temperatures below 30 K the transport is mediated by surface states while at higher temperatures activated transport via bulk channels sets in. The surface state conductivity and bulk band gaps can be tuned by the Sb-concentration and film thickness, respectively. For films as thin as 4 nm the surface state transport is strongly suppressed in contrast to Bi(111) films grown under identical conditions. The impurity channel is of intrinsic origin due to the growth and alloy formation process and turns out to be located at the buried interface.

  5. Biomolecular papain thin films grown by matrix assisted and conventional pulsed laser deposition: A comparative study

    Science.gov (United States)

    György, E.; Pérez del Pino, A.; Sauthier, G.; Figueras, A.

    2009-12-01

    Biomolecular papain thin films were grown both by matrix assisted pulsed laser evaporation (MAPLE) and conventional pulsed laser deposition (PLD) techniques with the aid of an UV KrF∗ (λ =248 nm, τFWHM≅20 ns) excimer laser source. For the MAPLE experiments the targets submitted to laser radiation consisted on frozen composites obtained by dissolving the biomaterial powder in distilled water at 10 wt % concentration. Conventional pressed biomaterial powder targets were used in the PLD experiments. The surface morphology of the obtained thin films was studied by atomic force microscopy and their structure and composition were investigated by Fourier transform infrared spectroscopy. The possible physical mechanisms implied in the ablation processes of the two techniques, under comparable experimental conditions were identified. The results showed that the growth mode, surface morphology as well as structure of the deposited biomaterial thin films are determined both by the incident laser fluence value as well as target preparation procedure.

  6. Structural and optical properties of yttria-stabilized-zirconia films grown by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Garcia, G.; Figueras, A. [ICMAB/CSIC, Bellaterra (Spain); Merino, R.I.; Orera, V.M. [University de Zaragoza, U.E.I. IV Espectroscopia de Solidos, Fac. de Ciencias, ICMA/CSIC, Plaza San Francisco, 50009, Zaragoza (Spain); Llibre, J. [S.E. de Carburos Metalicos, Passeig Zona Franca, 14-20, 08038, Barcelona (Spain)

    2000-07-17

    The morphology of yttria doped zirconia thin films deposited by metal organic chemical vapour deposition (MOCVD) in two different substrate materials, glassy quartz and sapphire single crystals has been examined. The Y{sub 2}O{sub 3} doping concentration has been varied from 3 to 12 mol percent. Structural characterization has been realized by X-ray diffraction, raman spectroscopy and scanning electron microscopy. The structure of the films corresponds to that of bulk crystals of the same composition. Refractive index has been determined by the optical transmission method. Refractive index close to those of bulk crystals are obtained for epitaxially grown zirconia on sapphire substrates, whereas low refractive index values, related with low packing densities, are obtained for thin films in the glassy substrate. (orig.)

  7. Quantitative assessment of molecular dynamics-grown amorphous silicon and germanium films on silicon (111)

    Science.gov (United States)

    Käshammer, Peter; Borgardt, Nikolai I.; Seibt, Michael; Sinno, Talid

    2016-09-01

    Molecular dynamics based on the empirical Tersoff potential was used to simulate the deposition of amorphous silicon and germanium on silicon(111) at various deposition rates and temperatures. The resulting films were analyzed quantitatively by comparing one-dimensional atomic density profiles to experimental measurements. It is found that the simulations are able to capture well the structural features of the deposited films, which exhibit a gradual loss of crystalline order over several monolayers. A simple mechanistic model is used to demonstrate that the simulation temperature may be used to effectively accelerate the surface relaxation processes during deposition, leading to films that are consistent with experimental samples grown at deposition rates many orders-of-magnitude slower than possible in a molecular dynamics simulation.

  8. Raman spectroscopy of ZnMnO thin films grown by pulsed laser deposition

    Science.gov (United States)

    Orozco, S.; Riascos, H.; Duque, S.

    2016-02-01

    ZnMnO thin films were grown by Pulsed Laser Deposition (PLD) technique onto Silicon (100) substrates at different growth conditions. Thin films were deposited varying Mn concentration, substrate temperature and oxygen pressure. ZnMnO samples were analysed by using Raman Spectroscopy that shows a red shift for all vibration modes. Raman spectra revealed that nanostructure of thin films was the same of ZnO bulk, wurzite hexagonal structure. The structural disorder was manifested in the line width and shape variations of E2(high) and E2(low) modes located in 99 and 434cm-1 respectively, which may be due to the incorporation of Mn ions inside the ZnO crystal lattice. Around 570cm-1 was found a peak associated to E1(LO) vibration mode of ZnO. 272cm-1 suggest intrinsic host lattice defects. Additional mode centred at about 520cm-1 can be overlap of Si and Mn modes.

  9. Molecular-Beam Epitaxially Grown MgB2 Thin Films and Superconducting Tunnel Junctions

    Directory of Open Access Journals (Sweden)

    Jean-Baptiste Laloë

    2011-01-01

    Full Text Available Since the discovery of its superconducting properties in 2001, magnesium diboride has generated terrific scientific and engineering research interest around the world. With a of 39 K and two superconducting gaps, MgB2 has great promise from the fundamental point of view, as well as immediate applications. Several techniques for thin film deposition and heterojunction formation have been established, each with its own advantages and drawbacks. Here, we will present a brief overview of research based on MgB2 thin films grown by molecular beam epitaxy coevaporation of Mg and B. The films are smooth and highly crystalline, and the technique allows for virtually any heterostructure to be formed, including all-MgB2 tunnel junctions. Such devices have been characterized, with both quasiparticle and Josephson tunneling reported. MgB2 remains a material of great potential for a multitude of further characterization and exploration research projects and applications.

  10. X-ray photoelectron spectroscopy study of the growth kinetics of biomimetically grown hydroxyapatite thin-film coatings

    Science.gov (United States)

    McLeod, K.; Kumar, S.; Dutta, N. K.; Smart, R. St. C.; Voelcker, N. H.; Anderson, G. I.

    2010-09-01

    Hydroxyapatite (HA) thin-film coatings grown biomimetically using simulated body fluid (SBF) are desirable for a range of applications such as improved fixation of fine- and complex-shaped orthopedic and dental implants, tissue engineering scaffolds and localized and sustained drug delivery. There is a dearth of knowledge on two key aspects of SBF-grown HA coatings: (i) the growth kinetics over short deposition periods, hours rather than weeks; and (ii) possible difference between the coatings deposited with and without periodic SBF replenishment. A study centred on these aspects is reported. X-ray photoelectron spectroscopy (XPS) has been used to study the growth kinetics of SBF-grown HA coatings for deposition periods ranging from 0.5 h to 21 days. The coatings were deposited with and without periodic replenishment of SBF. The XPS studies revealed that: (i) a continuous, stable HA coating fully covered the titanium substrate after a growth period of 13 h without SBF replenishment; (ii) thicker HA coatings about 1 μm in thickness resulted after a growth period of 21 days, both with and without SBF replenishment; and (iii) the Ca/P ratio at the surface of the HA coating was significantly lower than that in its bulk. No significant difference between HA grown with and without periodic replenishment of SBF was found. The coatings were determined to be carbonated, a characteristic desirable for improved implant fixation. The atomic force and scanning electron microscopies results suggested that heterogeneous nucleation and growth are the primary deposition mode for these coatings. Primary osteoblast cell studies demonstrated the biocompatibility of these coatings, i.e., osteoblast colony coverage of approximately 80%, similar to the control substrate (tissue culture polystyrene).

  11. X-ray photoelectron spectroscopy study of the growth kinetics of biomimetically grown hydroxyapatite thin-film coatings

    International Nuclear Information System (INIS)

    Hydroxyapatite (HA) thin-film coatings grown biomimetically using simulated body fluid (SBF) are desirable for a range of applications such as improved fixation of fine- and complex-shaped orthopedic and dental implants, tissue engineering scaffolds and localized and sustained drug delivery. There is a dearth of knowledge on two key aspects of SBF-grown HA coatings: (i) the growth kinetics over short deposition periods, hours rather than weeks; and (ii) possible difference between the coatings deposited with and without periodic SBF replenishment. A study centred on these aspects is reported. X-ray photoelectron spectroscopy (XPS) has been used to study the growth kinetics of SBF-grown HA coatings for deposition periods ranging from 0.5 h to 21 days. The coatings were deposited with and without periodic replenishment of SBF. The XPS studies revealed that: (i) a continuous, stable HA coating fully covered the titanium substrate after a growth period of 13 h without SBF replenishment; (ii) thicker HA coatings about 1 μm in thickness resulted after a growth period of 21 days, both with and without SBF replenishment; and (iii) the Ca/P ratio at the surface of the HA coating was significantly lower than that in its bulk. No significant difference between HA grown with and without periodic replenishment of SBF was found. The coatings were determined to be carbonated, a characteristic desirable for improved implant fixation. The atomic force and scanning electron microscopies results suggested that heterogeneous nucleation and growth are the primary deposition mode for these coatings. Primary osteoblast cell studies demonstrated the biocompatibility of these coatings, i.e., osteoblast colony coverage of approximately 80%, similar to the control substrate (tissue culture polystyrene).

  12. X-ray photoelectron spectroscopy study of the growth kinetics of biomimetically grown hydroxyapatite thin-film coatings

    Energy Technology Data Exchange (ETDEWEB)

    McLeod, K. [Ian Wark Research Institute, University of South Australia, Mawson Lakes, SA 5095 (Australia); Kumar, S., E-mail: sunil.kumar@unisa.edu.au [Ian Wark Research Institute, University of South Australia, Mawson Lakes, SA 5095 (Australia); Dutta, N.K. [Ian Wark Research Institute, University of South Australia, Mawson Lakes, SA 5095 (Australia); Smart, R.St.C. [Applied Centre for Structural and Synchrotron Studies, University of South Australia, Mawson Lakes, SA 5095 (Australia); Voelcker, N.H. [School of Chemistry, Physics and Earth Sciences, Flinders University of South Australia, GPO Box 2100, Adelaide 5001 (Australia); Anderson, G.I. [School of Veterinary Science, University of Adelaide, Adelaide, SA 5005 (Australia)

    2010-09-15

    Hydroxyapatite (HA) thin-film coatings grown biomimetically using simulated body fluid (SBF) are desirable for a range of applications such as improved fixation of fine- and complex-shaped orthopedic and dental implants, tissue engineering scaffolds and localized and sustained drug delivery. There is a dearth of knowledge on two key aspects of SBF-grown HA coatings: (i) the growth kinetics over short deposition periods, hours rather than weeks; and (ii) possible difference between the coatings deposited with and without periodic SBF replenishment. A study centred on these aspects is reported. X-ray photoelectron spectroscopy (XPS) has been used to study the growth kinetics of SBF-grown HA coatings for deposition periods ranging from 0.5 h to 21 days. The coatings were deposited with and without periodic replenishment of SBF. The XPS studies revealed that: (i) a continuous, stable HA coating fully covered the titanium substrate after a growth period of 13 h without SBF replenishment; (ii) thicker HA coatings about 1 {mu}m in thickness resulted after a growth period of 21 days, both with and without SBF replenishment; and (iii) the Ca/P ratio at the surface of the HA coating was significantly lower than that in its bulk. No significant difference between HA grown with and without periodic replenishment of SBF was found. The coatings were determined to be carbonated, a characteristic desirable for improved implant fixation. The atomic force and scanning electron microscopies results suggested that heterogeneous nucleation and growth are the primary deposition mode for these coatings. Primary osteoblast cell studies demonstrated the biocompatibility of these coatings, i.e., osteoblast colony coverage of approximately 80%, similar to the control substrate (tissue culture polystyrene).

  13. Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends

    Science.gov (United States)

    Miikkulainen, Ville; Leskelä, Markku; Ritala, Mikko; Puurunen, Riikka L.

    2013-01-01

    Atomic layer deposition (ALD) is gaining attention as a thin film deposition method, uniquely suitable for depositing uniform and conformal films on complex three-dimensional topographies. The deposition of a film of a given material by ALD relies on the successive, separated, and self-terminating gas-solid reactions of typically two gaseous reactants. Hundreds of ALD chemistries have been found for depositing a variety of materials during the past decades, mostly for inorganic materials but lately also for organic and inorganic-organic hybrid compounds. One factor that often dictates the properties of ALD films in actual applications is the crystallinity of the grown film: Is the material amorphous or, if it is crystalline, which phase(s) is (are) present. In this thematic review, we first describe the basics of ALD, summarize the two-reactant ALD processes to grow inorganic materials developed to-date, updating the information of an earlier review on ALD [R. L. Puurunen, J. Appl. Phys. 97, 121301 (2005)], and give an overview of the status of processing ternary compounds by ALD. We then proceed to analyze the published experimental data for information on the crystallinity and phase of inorganic materials deposited by ALD from different reactants at different temperatures. The data are collected for films in their as-deposited state and tabulated for easy reference. Case studies are presented to illustrate the effect of different process parameters on crystallinity for representative materials: aluminium oxide, zirconium oxide, zinc oxide, titanium nitride, zinc zulfide, and ruthenium. Finally, we discuss the general trends in the development of film crystallinity as function of ALD process parameters. The authors hope that this review will help newcomers to ALD to familiarize themselves with the complex world of crystalline ALD films and, at the same time, serve for the expert as a handbook-type reference source on ALD processes and film crystallinity.

  14. Polycrystalline GaSb thin films grown by co-evaporation

    Institute of Scientific and Technical Information of China (English)

    Qiao Zaixiang; Sun Yun; He Weiyu; He Qing; Li Changjian

    2009-01-01

    We report optical and electrical properties of polycrystalline GaSb thin films which were successfully grown by co-evaporation on soda-lime glass substrates. The thin films have preferential orientation of the (111)direction. SEM results indicate that the average grain size of GaSb thin film is 500 nm with the substrate temperature of 560 ℃. The average reflectance of GaSb thin film is about 30% and the absorption coefficient is of the order of 104 cm-1. The optical bandgap of GaSb thin film is 0.726 eV. The hole concentration shows a clear increasing trend as the Ga-evaporation-temperature/Sb-evaporation-temperature (TGa/TSb) ratio increases. When the Ga crucible temperature is 810 ℃ and the antinomy crucible temperature is 415 ℃, the hole concentration of polycrystalline GaSb is 2 x 1017 cm-3 and the hole mobility is 130 cm2/(V-s). These results suggest that polycrystalline GaSb thin film is a good candidate for the use as a cheap material in TPV cells.

  15. Magnetism of ultrathin Pd99Fe01 films grown on niobium

    International Nuclear Information System (INIS)

    Magnetic properties of ultrathin Pd99Fe01 films grown on niobium films are investigated by magneto-optic visualization, SQUID magnetometry, and Hall-voltage measurements in the temperature range from 3 to 40 K. We show that the films are ferromagnetic at thickness larger than 10 nm. The Curie temperature TC varies from 2 to 40 K with increase of film thickness to 80 nm. The value of spontaneous magnetization of the Pd99Fe01 depends on the PdFe film thickness. The estimated spin polarization is about 4 μB per Fe ion, which corresponds to the polarization of the Pd3Fe compound. In contrast to the homogenous bulk material, Pd99Fe01 films consist of ferromagnetic nano-clusters in a paramagnetic host, which is confirmed by characteristic features of the magnetization loops and by the increase of critical current density in the adjacent Nb layer. The size of the clusters is estimated as 10 nm, which is in agreement with the 30% increase of the supercurrent observed in the Nb. (paper)

  16. Positron beam and RBS studies of thermally grown oxide films on stainless steel grade 304

    Energy Technology Data Exchange (ETDEWEB)

    Horodek, P., E-mail: pawel.horodek@ifj.edu.pl [Joint Institute for Nuclear Research, Joliot-Curie 6, 141980 Dubna, Moscow Region (Russian Federation); Institute of Nuclear Physics PAS, E. Radzikowskiego 152, 31-342 Krakow (Poland); Siemek, K. [Institute of Nuclear Physics PAS, E. Radzikowskiego 152, 31-342 Krakow (Poland); Kobets, A.G. [Joint Institute for Nuclear Research, Joliot-Curie 6, 141980 Dubna, Moscow Region (Russian Federation); Institute of Electrophysics and Radiation Technologies NAS of Ukraine, Chernyshevsky St. 28, 61002 Kharkov (Ukraine); Kulik, M. [Joint Institute for Nuclear Research, Joliot-Curie 6, 141980 Dubna, Moscow Region (Russian Federation); Institute of Physics, Maria Curie-Skłodowska University, Pl. Marii Curie-Sklodowskiej 1, 20-031 Lublin (Poland); Meshkov, I.N. [Joint Institute for Nuclear Research, Joliot-Curie 6, 141980 Dubna, Moscow Region (Russian Federation)

    2015-04-01

    Highlights: • Using slow positron beam the S parameter profiles for samples oxidized in different atmospheres and times are shown. • The multi-layered character of oxide films is confirmed. • Characterization of the kind of layers and time evolution are proposed. • The thicknesses of oxide films are found. • The time dependencies of thermally grown oxides are presented. - Abstract: The formation of oxide films on surfaces of stainless steel 304 AISI annealed at 800 °C in vacuum, air and in flow N{sub 2} atmospheres was studied using variable energy positron beam technique (VEP) and Rutherford backscattering/nuclear reaction (RBS/NR) methods. In frame of these studies, Doppler broadening of annihilation line (DB) measurements were performed. For a sample heated in vacuum the oxide film ca. 8 nm is observed. For specimens oxidized in air and N{sub 2} the multi-layered oxide films of about a few hundred nanometers are recognized. The RBS/NR measurements have shown that the sample annealed in vacuum contains a lower quantity of oxygen while for samples heated in the air and N{sub 2} non-linear and rather linear time-dependency are observed, respectively. The thicknesses of total oxide films obtained from RBS/NR tests are in good agreement with the VEP results. Time evolution of the oxide growing was studied as well.

  17. Hybrid Graphene and Single-Walled Carbon Nanotube Films for Enhanced Phase-Change Heat Transfer.

    Science.gov (United States)

    Seo, Han; Yun, Hyung Duk; Kwon, Soon-Yong; Bang, In Cheol

    2016-02-10

    Nucleate boiling is an effective heat transfer method in power generation systems and cooling devices. In this letter, hybrid graphene/single-walled carbon nanotube (SWCNT), graphene, and SWCNT films deposited on indium tin oxide (ITO) surfaces were fabricated to investigate the enhancement of nucleate boiling phenomena described by the critical heat flux and heat transfer coefficient. The graphene films were grown on Cu foils and transferred to ITO surfaces. Furthermore, SWCNTs were deposited on the graphene layer to fabricate hybrid graphene/SWCNT films. We determined that the hybrid graphene/SWCNT film deposited on an ITO surface is the most effective heat transfer surface in pool boiling because of the interconnected network of carbon structures.

  18. Single-crystalline BaTiO3 films grown by gas-source molecular beam epitaxy

    Science.gov (United States)

    Matsubara, Yuya; Takahashi, Kei S.; Tokura, Yoshinori; Kawasaki, Masashi

    2014-12-01

    Thin BaTiO3 films were grown on GdScO3 (110) substrates by metalorganic gas-source molecular beam epitaxy. Titanium tetra-isopropoxide (TTIP) was used as a volatile precursor that provides a wide growth window of the supplied TTIP/Ba ratio for automatic adjustment of the film composition. Within the growth window, compressively strained films can be grown with excellent crystalline quality, whereas films grown outside of the growth window are relaxed with inferior crystallinity. This growth method will provide a way to study the intrinsic properties of ferroelectric BaTiO3 films and their heterostructures by precise control of the stoichiometry, structure, and purity.

  19. Source Molecular Effect on Amorphous Carbon Film Deposition

    OpenAIRE

    Kawazoe, Hiroki; Inayoshi, Takanori; Shinohara, Masanori; Matsuda, Yoshinobu; Fujiyama, Hiroshi; Nitta, Yuki; Nakatani, Tatsuyuki

    2009-01-01

    We investigated deposition process of amorphous carbon films using acetylene and methane as a source molecule, by using infrared spectroscopy in multiple internal reflection geometry (MIR-IRAS). We found that deposited film structures were different due to source molecules.

  20. Nonhomogeneous morphology and the elastic modulus of aligned carbon nanotube films

    International Nuclear Information System (INIS)

    Carbon nanotube (CNT) arrays offer the potential to develop nanostructured materials that leverage their outstanding physical properties. Vertically aligned carbon nanotubes (VACNTs), also named CNT forests, CNT arrays, or CNT turfs, can provide high heat conductivity and sufficient mechanical compliance to accommodate thermal expansion mismatch for use as thermal interface materials (TIMs). This paper reports measurements of the in-plane moduli of vertically aligned, single-walled CNT (SWCNT) and multi-walled CNT (MWCNT) films. The mechanical response of these films is related to the nonhomogeneous morphology of the grown nanotubes, such as entangled nanotubes of a top crust layer, aligned CNTs in the middle region, and CNTs in the bottom layer. To investigate how the entanglements govern the overall mechanical moduli of CNT films, we remove the crust layer consisting of CNT entanglements by etching the CNT films from the top. A microfabricated cantilever technique shows that crust removal reduces the resulting moduli of the etched SWCNT films by as much as 40%, whereas the moduli of the etched MWCNT films do not change significantly, suggesting a minimal crust effect on the film modulus for thick MWCNT films (>90 μm). This improved understanding will allow us to engineer the mechanical moduli of CNT films for TIMs or packaging applications. (paper)

  1. Photoelectrochemical cell using dye sensitized zinc oxide nanowires grown on carbon fibers

    Science.gov (United States)

    Unalan, Husnu Emrah; Wei, Di; Suzuki, Kenichi; Dalal, Sharvari; Hiralal, Pritesh; Matsumoto, Hidetoshi; Imaizumi, Shinji; Minagawa, Mie; Tanioka, Akihiko; Flewitt, Andrew J.; Milne, William I.; Amaratunga, Gehan A. J.

    2008-09-01

    Zinc oxide (ZnO) nanowires (NWs) grown on carbon fibers using a vapor transport and condensation approach are used as the cathode of a photoelectrochemical cell. The carbon fibers were obtained by electrospray deposition and take the form of a flexible carbon fabric. The ZnO NW on carbon fiber anode is combined with a "black dye" photoabsorber, an electrolyte, and a platinum (Pt) counterelectrode to complete the cell. The results show that ZnO NW and carbon fibers can be used for photoinduced charge separation/charge transport and current collection, respectively, in a photoelectrochemical cell.

  2. Detection of Carbon Monoxide Using Polymer-Carbon Composite Films

    Science.gov (United States)

    Homer, Margie L.; Ryan, Margaret A.; Lara, Liana M.

    2011-01-01

    A carbon monoxide (CO) sensor was developed that can be incorporated into an existing sensing array architecture. The CO sensor is a low-power chemiresistor that operates at room temperature, and the sensor fabrication techniques are compatible with ceramic substrates. Sensors made from four different polymers were tested: poly (4-vinylpryridine), ethylene-propylene-diene-terpolymer, polyepichlorohydrin, and polyethylene oxide (PEO). The carbon black used for the composite films was Black Pearls 2000, a furnace black made by the Cabot Corporation. Polymers and carbon black were used as received. In fact, only two of these sensors showed a good response to CO. The poly (4-vinylpryridine) sensor is noisy, but it does respond to the CO above 200 ppm. The polyepichlorohydrin sensor is less noisy and shows good response down to 100 ppm.

  3. A low-temperature synthesis of electrochemical active Pt nanoparticles and thin films by atomic layer deposition on Si(111) and glassy carbon surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Rui [Joint Center for Artificial Photosynthesis, California Institute of Technology, Pasadena, CA 91125 (United States); Han, Lihao [Joint Center for Artificial Photosynthesis, California Institute of Technology, Pasadena, CA 91125 (United States); Photovoltaic Materials and Devices (PVMD) Laboratory, Delft University of Technology, P.O. Box 5031, GA Delft 2600 (Netherlands); Huang, Zhuangqun; Ferrer, Ivonne M. [Joint Center for Artificial Photosynthesis, California Institute of Technology, Pasadena, CA 91125 (United States); Division of Chemistry and Chemical Engineering, California Institute of Technology, 210 Noyes Laboratory 127-72, Pasadena, CA 91125 (United States); Smets, Arno H.M.; Zeman, Miro [Photovoltaic Materials and Devices (PVMD) Laboratory, Delft University of Technology, P.O. Box 5031, GA Delft 2600 (Netherlands); Brunschwig, Bruce S., E-mail: bsb@caltech.edu [Beckman Institute, California Institute of Technology, Pasadena, CA 91125 (United States); Lewis, Nathan S., E-mail: nslewis@caltech.edu [Joint Center for Artificial Photosynthesis, California Institute of Technology, Pasadena, CA 91125 (United States); Beckman Institute, California Institute of Technology, Pasadena, CA 91125 (United States); Division of Chemistry and Chemical Engineering, California Institute of Technology, 210 Noyes Laboratory 127-72, Pasadena, CA 91125 (United States); Kavli Nanoscience Institute, California Institute of Technology, Pasadena, CA 91125 (United States)

    2015-07-01

    Atomic layer deposition (ALD) was used to deposit nanoparticles and thin films of Pt onto etched p-type Si(111) wafers and glassy carbon discs. Using precursors of MeCpPtMe{sub 3} and ozone and a temperature window of 200–300 °C, the growth rate was 80–110 pm/cycle. X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and scanning electron microscopy (SEM) were used to analyze the composition, structure, morphology, and thickness of the ALD-grown Pt nanoparticle films. The catalytic activity of the ALD-grown Pt for the hydrogen evolution reaction was shown to be equivalent to that of e-beam evaporated Pt on glassy carbon electrode. - Highlights: • Pure Pt films were grown by atomic layer deposition (ALD) using MeCpPtMe3 and ozone. • ALD-grown Pt thin films had high growth rates of 110 pm/cycle. • ALD-grown Pt films were electrocatalytic for hydrogen evolution from water. • Electrocatalytic activity of the ALD Pt films was equivalent to e-beam deposited Pt. • No carbon species were detected in the ALD-grown Pt films.

  4. A statistical mechanics model of carbon nanotube macro-films

    Institute of Scientific and Technical Information of China (English)

    2011-01-01

    Carbon nanotube macro-films are two-dimensional films with micrometer thickness and centimeter by centimeter in-plane dimension.These carbon nanotube macroscopic assemblies have attracted significant attention from the material and mechanics communities recently because they can be easily handled and tailored to meet specific engineering needs.This paper reports the experimental methods on the preparation and characterization of single-walled carbon nanotube macro-films,and a statistical mechanics model on ...

  5. Epitaxially-Grown Europium-Doped Barium Titanate Films on Various Substrates for Red Emission.

    Science.gov (United States)

    Hwang, Kyu-Seog; Jeon, Young-Sun; Lee, Young-Hwan; Hwangbo, Seung; Kim, Jin-Tae

    2015-10-01

    Intense red photoluminescence under ultraviolet excitation was observed in epitaxially-grown europium-doped perovskite BaTiO3 thin films deposited on the SrTiO3 (100), MgO (100) and sapphire (0001) substrates using metal carboxylate complexes. Precursor films prepared by spin coating were pyrolyzed at 250 °C for 120 min in argon, followed by final annealing at 850 °C for 60 min in argon. Crystallinity and epitaxy of the films were analyzed by X-ray diffraction θ-2θ scan and pole-figure analysis. Photoluminescence of the thin films at room temperature under 254 nm was confirmed by a fluorescent spectrophotometer. The obtained epitaxial BaTiO3 thin films on the SrTiO3 (100) and MgO (100) substrates show an intense red-emission lines at 615 nm corresponding to the (5)D0 --> (7)F2 transitions on Eu(3+) with broad bands at 595 and 650 nm. PMID:26726427

  6. Crystallinity Improvement of ZnO Thin Film on Different Buffer Layers Grown by MBE

    Directory of Open Access Journals (Sweden)

    Shao-Ying Ting

    2012-01-01

    Full Text Available The material and optical properties of ZnO thin film samples grown on different buffer layers on sapphire substrates through a two-step temperature variation growth by molecular beam epitaxy were investigated. The thin buffer layer between the ZnO layer and the sapphire substrate decreased the lattice mismatch to achieve higher quality ZnO thin film growth. A GaN buffer layer slightly increased the quality of the ZnO thin film, but the threading dislocations still stretched along the c-axis of the GaN layer. The use of MgO as the buffer layer decreased the surface roughness of the ZnO thin film by 58.8% due to the suppression of surface cracks through strain transfer of the sample. From deep level emission and rocking curve measurements it was found that the threading dislocations play a more important role than oxygen vacancies for high-quality ZnO thin film growth.

  7. Photoluminescence of localized excitons in ZnCdO thin films grown by molecular beam epitaxy

    Science.gov (United States)

    Wu, T. Y.; Huang, Y. S.; Hu, S. Y.; Lee, Y. C.; Tiong, K. K.; Chang, C. C.; Shen, J. L.; Chou, W. C.

    2016-07-01

    We have investigated the luminescence characteristics of Zn1-xCdxO thin films with different Cd contents grown by molecular beam epitaxy system. The temperature-dependent photoluminescence (PL) and excitation power-dependent PL spectra were measured to clarify the luminescence mechanisms of the Zn1-xCdxO thin films. The peak energy of the Zn1-xCdxO thin films with increasing the Cd concentration is observed as redshift and can be fitted by the quadratic function of alloy content. The broadened full-width at half-maximum (FWHM) estimated from the 15 K PL spectra as a function of Cd content shows a larger deviation between the experimental values and theoretical curve, which indicates that experimental FWHM values are affected not only by alloy compositional disorder but also by localized excitons occupying states in the tail of the density of states. The Urbach energy determined from an analysis of the lineshape of the low-energy side of the PL spectrum and the degree of localization effect estimated from the temperature-induced S-shaped PL peak position described an increasing mean exciton-localization effects in ZnCdO films with increasing the Cd content. In addition, the PL intensity and peak position as a function of excitation power are carried out to clarify the types of radiative recombination and the effects of localized exciton in the ZnCdO films with different Cd contents.

  8. Heteroepitaxial film silicon solar cell grown on Ni-W foils

    Energy Technology Data Exchange (ETDEWEB)

    Wee, Sung Hun [ORNL; Cantoni, Claudia [ORNL; Fanning, Thomas [Ampulse Corporation; Teplin, Charles [National Renewable Energy Laboratory (NREL); Bogorin, Daniela Florentina [ORNL; Bornstein, Jon [Ampulse Corporation; Bowers, Karen [Ampulse Corporation; Schroeter, [Ampulse Corporation; Hasoon, Falah [National Renewable Energy Laboratory (NREL); Branz, Howard [National Renewable Energy Laboratory (NREL); Paranthaman, Mariappan Parans [ORNL; Goyal, Amit [ORNL

    2013-01-01

    Today, silicon-wafer-based technology dominates the photovoltaic (PV) industry because it enables high efficiency, is produced from abundant, non-toxic materials and is proven in the PV marketplace.[1] However, costs associated with the wafer itself limit ultimate cost reductions.[1,2] PV based on absorber layers of crystalline Si with only 2 to 10 m thickness are a promising route to reduce these costs, while maintaining efficiencies above 15%.[3-5] With the goal of fabricating low-cost film crystalline Si (c-Si), recent research has explored wafer peeling,[6,7] crystallization of amorphous silicon films on glass,[4,8-10] and seed and epitaxy approaches.[3,5,11] In this third approach, one initially forms a seed layer that establishes the grain size and crystalline order. The Si layer is then grown heteroepitaxially on the seed layer, so that it replicates the seed crystal structure. In all of these film c-Si approaches, the critical challenge is to grow c-Si with adequate material quality: specifically, the diffusion length (LD) must be at least three times the film thickness.[12] In polycrystalline Si films, grain boundaries (GBs) are recombination-active and significantly reduce LD. This adverse effects of GBs motivates research into growth of large grained c-Si [13,14] (for a low density of GBs) and biaxially-textured c-Si [11] (for low-angle GBs).

  9. Transparent conductive Al-doped ZnO thin films grown at room temperature

    Energy Technology Data Exchange (ETDEWEB)

    Wang Yuping; Lu Jianguo; Bie Xun; Gong Li; Li Xiang; Song Da; Zhao Xuyang; Ye Wenyi; Ye Zhizhen [State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China)

    2011-05-15

    Aluminum-doped ZnO (ZnO:Al, AZO) thin films were prepared on glass substrates by dc reactive magnetron sputtering from a Zn-Al alloy target at room temperature. The effects of the Ar-to-O{sub 2} partial pressure ratios on the structural, electrical, and optical properties of AZO films were studied in detail. AZO films grown using 100:4 to 100:8 Ar-to-O{sub 2} ratio result in acceptable quality films with c-axis orientated crystals, uniform grains, 10{sup -3} {Omega} cm resistivity, greater than 10{sup 20} cm{sup -3} electron concentration, and high transmittance, 90%, in the visible region. The lowest resistivity of 4.11x10{sup -3} {Omega} cm was obtained under the Ar-to-O{sub 2} partial pressure ratio of 100:4. A relatively strong UV emission at {approx}3.26 eV was observed in the room-temperature photoluminescence spectrum. X-ray photoelectron spectroscopy analysis confirmed that Al was introduced into ZnO and substitutes for Zn and doped the film n-type.

  10. ENHANCING ADHESION OF TETRAHEDRAL AMORPHOUS CARBON FILMS

    Institute of Scientific and Technical Information of China (English)

    Zhao Yuqing; Lin Yi; Wang Xiaoyan; Wang Yanwu; Wei Xinyu

    2005-01-01

    Objective The high energy ion bombardment technique is applied to enhancing the adhesion of the tetrahedral amorphous carbon (TAC) films deposited by the filtered cathode vacuum arc (FCVA). Methods The abrasion method, scratch method, heating and shaking method as well as boiling salt solution method is used to test the adhesion of the TAC films on various material substrates. Results The test results show that the adhesion is increased as the ion bombardment energy increases. However, if the bombardment energy were over the corresponding optimum value, the adhesion would be enhanced very slowly for the harder material substrates and drops quickly, for the softer ones. Conclusion The optimum values of the ion bombardment energy are larger for the harder materials than that for the softer ones.

  11. The magnetic and chemical structural property of the epitaxially-grown multilayered thin film

    Science.gov (United States)

    Lee, Hwachol

    L10 FePt- and Fe-related alloys such as FePtRh, FeRh and FeRhPd have been studied for the high magnetocrystalline anisotropy and magnetic phase transition property for the future application. In this work, the thin film structural and magnetic property is investigated for the selected FePtRh and FeRhPd alloys. The compositionally-modulated L10 FePtRh multilayered structure is grown epitaxially on a-plane Al2O3 with Cr and Pt buffer layer at 600degC growth temperature by DC sputtering technique and examined for the structural, interfacial and magnetic property. For the epitaxially grown L10 [Fe50Pt45Rh5 (FM) (10nm) / Fe50Pt25Rh25 (AFM) (20nm)]x8 superlattice, the magnetically and chemically sharp interface formation between layers was observed in X-ray diffraction, transmission electron microscopy and polarized neutron reflectivity measurements with the negligible exchange bias at room and a slight coupling effect at lower temperature regime. For FeRhPd, the magnetic phase transition of epitaxially-grown 111-oriented Fe46Rh48Pd6 thin film is studied. The applied Rhodium buffer layer on a-plane Al2O3 (11 20) at 600degC shows the extraordinarily high quality of epitaxial film in (111) orientation, where two broad and coherent peak in rocking curve, and Laue oscillations are observed. The epitaxially-grown Pd-doped FeRh on Pt (111) grown at 600degC, 700degC exhibits the co-existing stable L10 (111) and B2 (110) structures and magnetic phase transition around 300degC. On the other hand, the partially-ordered FeRhPd structure grown at 400degC, 500degC shows background high ferromagnetic state over 5K˜350K temperature. For the reduced thickness of Fe46Rh48Pd 6, the ferromagnetic state becomes dominant with a reduced portion of the film undergoing a magnetic phase transition. For some epitaxial FeRhPd film, the spin-glass-like disordered state is also observed in field dependent SQUID measurement. For the tri-layered FeRhPd with thin Pt spacer, the background

  12. Photoluminescence properties of ZnO films grown on InP by thermally oxidizing metallic Zn films

    CERN Document Server

    Chen, S J; Zhang, J Y; Lu, Y M; Shen, D Z; Fan, X W

    2003-01-01

    Photoluminescence (PL) properties of ZnO films grown on (001) InP substrates by thermal oxidization of metallic Zn films, in which oxygen vacancies and interstitial Zn ions are compensated by P ions diffusing from (001) InP substrates, are investigated. X-ray diffraction spectra indicate that P ions have diffused into the Zn films and chemically combined with Zn ions to form Zn sub 3 P sub 2. Intense free exciton emission dominates the PL spectra of ZnO films with very weak deep-level emission. Low-temperature PL spectra at 79 K are dominated by neutral-donor bound exciton emission at 3.299 eV (I sub 4) with a linewidth of 17.3 meV and neutral-acceptor bound exciton emission at 3.264 eV. The free exciton emission increases with increasing temperature and eventually dominates the emission spectrum for temperature higher than 170 K. Furthermore, the visible emission around 2.3 eV correlated with oxygen deficiencies and interstitial Zn defects was quenched to a remarkable degree by P diffusing from InP substrate...

  13. Preparation and Thermal Characterization of Diamond-Like Carbon Films

    Institute of Scientific and Technical Information of China (English)

    BAI Su-Yuan; TANG Zhen-An; HUANG Zheng-Xing; Yu Jun; WANG Jing; LIU Gui-Chang

    2009-01-01

    Diamond-like carbon (DLC) films are prepared on silicon substrates by microwave electron cyclotron resonance plasma enhanced chemical vapor deposition. Raman spectroscopy indicates that the films have an amorphous structure and typical characteristics. The topographies of the films are presented by AFM images. Effective thermal conductivities of the films are measured using a nanosecond pulsed photothermal reflectance method. The results show that thermal conductivity is dominated by the microstructure of the films.

  14. Deposition of carbon nitride films for space application

    Institute of Scientific and Technical Information of China (English)

    Feng Yu-Dong; Xu Chao; Wang Yi; Zhang Fu-Jia

    2006-01-01

    Carbon nitride thin films were prepared by electron-beam evaporation assisted with nitrogen ion bombardment and TiN/CNx composite films were by unbalanced dc magnetron sputtering, respectively. It was found that the sputtered films were better than the evaporated films in hardness and adhesion. The experiments of atomic oxygen action, cold welding, friction and wearing were emphasized, and the results proved that the sputtered TiN/CNx composite films were suitable for space application.

  15. Topological insulator Bi2Se3 thin films grown on double-layer graphene by molecular beam epitaxy

    OpenAIRE

    Song, Can-Li; Wang, Yi-Lin; Jiang, Ye-Ping; Zhang, Yi; Chang, Cui-Zu; Wang, Lili; He, Ke; Chen, Xi; Jia, Jin-Feng; Wang, Yayu; Fang, Zhong; Dai, Xi; Xie, Xin-Cheng; Qi, Xiao-Liang; Zhang, Shou-Cheng

    2010-01-01

    Atomically flat thin films of topological insulator Bi2Se3 have been grown on double-layer graphene formed on 6H-SiC(0001) substrate by molecular beam epitaxy. By a combined study of reflection high energy electron diffraction and scanning tunneling microscopy, we identified the Se-rich condition and temperature criterion for layer-by-layer growth of epitaxial Bi2Se3 films. The as-grown films without doping exhibit a low defect density of 1.0\\pm 0.2x1011/cm2, and become a bulk insulator at a ...

  16. Highly Strained Si Films with Ultra-low Dislocation Density Grown on Virtual Substrates of Thin Thickness

    Institute of Scientific and Technical Information of China (English)

    YANG Hong-Bin; ZHANG Xiang-Jiu

    2009-01-01

    @@ By using compositionally graded SiGe films as virtual substrates, tensile strained Si films with the strain of 1.5% and the threading dislocation density less than 1.0×105cm-2 are successfully grown in micron size windows by molecular beam epitaxy (MBE). The thickness of the virtual substrates was only 330nm. On the surface of the s-Si films no cross-hatched lines resulting from misfit dislocations could be observed. We attribute these results to the edge-induced strain relaxation of the epitaxial films in windows, and the patterned virtual substrates with compositionally graded SiGe films.

  17. Magnetic properties of MnAs thin films grown on GaAs (0 0 1) by MOVPE

    Energy Technology Data Exchange (ETDEWEB)

    Sterbinsky, G.E. [Department of Materials Science and Engineering, Northwestern University, 2220 Campus Drive, Evanston, IL 60208-3108 (United States); May, S.J. [Department of Materials Science and Engineering, Northwestern University, 2220 Campus Drive, Evanston, IL 60208-3108 (United States); Chiu, P.T. [Department of Materials Science and Engineering, Northwestern University, 2220 Campus Drive, Evanston, IL 60208-3108 (United States); Wessels, B.W. [Department of Materials Science and Engineering, Northwestern University, 2220 Campus Drive, Evanston, IL 60208-3108 (United States)]. E-mail: b-wessels@northwestern.edu

    2007-01-15

    The thickness dependence of the in-plane uniaxial anisotropy and coercive field of epitaxial MnAs thin films on GaAs (0 0 1) substrates has been determined from the magneto-optic Kerr effect. The metalorganic vapor phase epitaxy grown films are single {alpha} phase at room temperature with a B-type variant orientation. The coercive field of these films increases to a maximum for a film 35 nm thick and then decreases in thicker films. An increase in magnetic anisotropy field with increasing thickness is observed and is attributed to an increasing volume contribution to the anisotropy constant.

  18. Magnetic properties of MnAs thin films grown on GaAs (0 0 1) by MOVPE

    Science.gov (United States)

    Sterbinsky, G. E.; May, S. J.; Chiu, P. T.; Wessels, B. W.

    2007-01-01

    The thickness dependence of the in-plane uniaxial anisotropy and coercive field of epitaxial MnAs thin films on GaAs (0 0 1) substrates has been determined from the magneto-optic Kerr effect. The metalorganic vapor phase epitaxy grown films are single α phase at room temperature with a B-type variant orientation. The coercive field of these films increases to a maximum for a film 35 nm thick and then decreases in thicker films. An increase in magnetic anisotropy field with increasing thickness is observed and is attributed to an increasing volume contribution to the anisotropy constant.

  19. Effect of Different Catalyst Deposition Technique on Aligned Multiwalled Carbon Nanotubes Grown by Thermal Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    Mohamed Shuaib Mohamed Saheed

    2014-01-01

    Full Text Available The paper reported the investigation of the substrate preparation technique involving deposition of iron catalyst by electron beam evaporation and ferrocene vaporization in order to produce vertically aligned multiwalled carbon nanotubes array needed for fabrication of tailored devices. Prior to the growth at 700°C in ethylene, silicon dioxide coated silicon substrate was prepared by depositing alumina followed by iron using two different methods as described earlier. Characterization analysis revealed that aligned multiwalled carbon nanotubes array of 107.9 µm thickness grown by thermal chemical vapor deposition technique can only be achieved for the sample with iron deposited using ferrocene vaporization. The thick layer of partially oxidized iron film can prevent the deactivation of catalyst and thus is able to sustain the growth. It also increases the rate of permeation of the hydrocarbon gas into the catalyst particles and prevents agglomeration at the growth temperature. Combination of alumina-iron layer provides an efficient growth of high density multiwalled carbon nanotubes array with the steady growth rate of 3.6 µm per minute for the first 12 minutes and dropped by half after 40 minutes. Thicker and uniform iron catalyst film obtained from ferrocene vaporization is attributed to the multidirectional deposition of particles in the gaseous form.

  20. Growth and structure of MBE grown TiO2 anatase films with rutile nano-crystallites

    Energy Technology Data Exchange (ETDEWEB)

    Shao, Rui; Wang, Chong M.; McCready, David E.; Droubay, Timothy C.; Chambers, Scott A.

    2007-03-15

    We have grown TiO2 anatase films with rutile nanocrystalline inclusions using molecular beam epitaxy under different growth conditions. This model system is important for investigating the role of rutile/anatase interfaces in heterogeneous photocatalysis. To control the film structure, we grew a pure anatase (001) layer at a slow rate and then increased the growth rate to drive the nucleation of rutile particles. Structure analysis indicates that the rutile phase has four preferred orientations in the anatase film.

  1. Lutetium-doped EuO films grown by molecular-beam epitaxy

    OpenAIRE

    Melville, A; Mairoser, T.; Mannhart, J.; Schlom, D. G.; Schmehl, A.; Shai, D. E.; Monkman, E. J.; Harter, J. W.; Heeg, T.; Holländer, B; Schubert, J; Shen, K. M.

    2012-01-01

    The effect of lutetium doping on the structural, electronic, and magnetic properties of epitaxial EuO thin films grown by reactive molecular-beam epitaxy is experimentally investigated. The behavior of Lu-doped EuO is contrasted with doping by lanthanum and gadolinium. All three dopants are found to behave similarly despite differences in electronic configuration and ionic size. Andreev reflection measurements on Lu-doped EuO reveal a spin-polarization of 96% in the conduction band, despite n...

  2. SEM, EDS, PL and absorbance study of CdTe thin films grown by CSS method

    Energy Technology Data Exchange (ETDEWEB)

    Hernandez-Torres, M.E.; Silva-Gonzalez, R.; Gracia-Jimenez, J.M. [Instituto de Fisica, BUAP, Apdo. Postal J-48, San Manuel, 72570 Puebla, Pue. (Mexico); Casarrubias-Segura, G. [CIE- UNAM, 62580 Temixco, Morelos (Mexico)

    2006-09-22

    Oxygen-doped CdTe films were grown on conducting glass substrates by the close spaced sublimation (CSS) method and characterized using SEM, EDS, photoluminescence (PL) and absorbance. A significant change in the polycrystalline morphology is observed when the oxygen proportion is increased in the deposition atmosphere. The EDS analysis showed that all samples are nonstoichiometric with excess Te. The PL spectra show emission bands associated with Te vacancies (V{sub Te}), whose intensities decrease as the oxygen proportion in the CSS chamber is increased. The oxygen impurities occupy Te vacancies and modify the surfaces states, improving the nonradiative process. (author)

  3. Impedance analysis of different cell monolayers grown on gold-film electrodes.

    Science.gov (United States)

    Reiss, Bjoern; Wegener, Joachim

    2015-08-01

    Impedance analysis of mammalian cells grown on planar film electrodes provides a label-free, non-invasive and unbiased observation of cell-based assays addressing the biological response to drugs, toxins or stressors in general. Whereas the time course of the measured impedance at one particular frequency has been used a lot for quantitative monitoring, in-depth analysis of the frequency-dependent impedance spectra is rarely performed. This study summarizes and validates the existing model for spectral analysis by applying it to eight different cell types from different mammalian tissues. Model parameters correctly predict the functional and/or structural properties of the individual cells under study. PMID:26737923

  4. Thermal stability of CdZnO thin films grown by molecular-beam epitaxy

    International Nuclear Information System (INIS)

    CdZnO thin films with near-band-edge (NBE) photoluminescence (PL) emission from 2.39 eV to 2.74 eV were grown by plasma-assisted molecular-beam epitaxy on c-plane sapphire substrates with 800 deg. C in situ annealing. CdZnO thin films evolve from pure wurtzite (wz) structure, to mixture of wz and rock-salt (rs) structures confirmed by X-ray diffraction studies. Rapid-thermo-annealing (RTA) was performed on in situ annealed CdZnO samples. Pure wz CdZnO shows insignificant NBE PL peak shift after RTA, while mixture structure CdZnO shows evident blue shifts due to phase change after annealing, indicating the rs phase CdZnO changes to wz phase CdZnO during RTA process.

  5. Nanocolumnar association and domain formation in porous thin films grown by evaporation at oblique angles

    Science.gov (United States)

    Lopez-Santos, C.; Alvarez, R.; Garcia-Valenzuela, A.; Rico, V.; Loeffler, M.; Gonzalez-Elipe, A. R.; Palmero, A.

    2016-09-01

    Porous thin films grown at oblique angles by evaporation techniques are formed by tilted nanocolumnar structures which, depending on the material type and growth conditions, associate along certain preferential directions, giving rise to large domains. This arrangement, commonly denoted as bundling association, is investigated in the present work by performing fundamental experiments and growth simulations. It is proved that trapping processes of vapor species at the film surface, together with the shadowing mechanism, mediate the anisotropic widening of the nanocolumns and promote their preferential coalescence along certain directions, giving rise to domains with different shape and size. The role of these two processes is thoroughly studied in connection with the formation of these domains in materials as different as SiO2 and TiO2.

  6. Growth and Characterization of Semi-Insulating GaN Films Grown by MOCVD

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    High resistivity unintentionally doped GaN films were grown on (0001) sapphire substrates by metalorganic chemical vapor deposition. The surface morphology of the layer was measured by both atomic force microscopy and scanning electron microscopy. The results show that the films have mirror-like surface morphology with root mean square of 0.3 nm. The full width at half maximum of double crystal X-ray diffraction rocking curve for (0002) GaN is about 5.22 arcmin, indicative of high crystal quality. The resistivity of the GaN epilayers at room temperature and at 250 ℃ was measured to be approximate 109 and 106 Ω·cm respectively, by variable temperature Hall measurement. Deep level traps in the GaN epilayers were investigated by thermally stimulated current and resistivity measurements.

  7. STM/STS study of graphene directly grown on h-BN films on Cu foils

    Science.gov (United States)

    Jang, Won-Jun; Wang, Min; Jang, Seong-Gyu; Kim, Minwoo; Park, Seong-Yong; Kim, Sang-Woo; Kahng, Se-Jong; Choi, Jae-Young; Song, Young; Lee, Sungjoo; Sanit Collaboration; Department Of Physics, Korea University Collaboration; Graphene Research Center, Samsung Advanced Institute Of Technology Collaboration

    2013-03-01

    Graphene-based devices on standard SiO2 substrate commonly exhibit inferior characteristics relative to the expected intrinsic properties of graphene, due to the disorder existing at graphene-SiO2 interface. Recently, it has been shown that exfoliated and chemical vapor deposition (CVD) graphene transferred onto hexagonal boron nitride (h-BN) possesses significantly reduced charge inhomogeneity, and yields improved device performance. Here we report the scanning tunneling microscopy (STM) and spectroscopy (STS) results obtained from a graphene layer directly grown on h-BN insulating films on Cu foils. STS measurements illustrate that graphene/h-BN film is charge neutral without electronic perturbation from h-BN/Cu substrate. Corresponding Author

  8. Chemical structure of microcrystalline CdTe films grown by RF sputtering

    Science.gov (United States)

    Hernández-Calderón, I.; Jiménez-Sandoval, S.; Peña, J. L.; Sailer, V.

    1990-01-01

    We have applied X-ray photoemission and Auger spectroscopy techniques to the study of the stoichiometric properties of CdTe thin films grown by RF sputtering. The microcrystalline films were deposited on glass substrates held at temperatures between 50 and 200°C. They contain a mixture of the cubic (zinc-blende) and hexagonal (wurtzite) phases which are nearly stoichiometric. By using bulk and surface sensitive photoemission geometries it is shown that a tellurium oxide overlayer is always formed after exposure to air. A simple calculation shows that this overlayer is at most 10 Å thick. Cadmium seems to be insensitive to the presence of oxygen, as demonstrated by the absence of shifted Cd peaks in the X-ray spectra. It is shown that the low kinetic energy features in the Auger spectra ( oxide overlayer and contamination.

  9. Effect of external stress on phase diagrams and dielectric properties of epitaxial ferroelectric thin films grown on orthorhombic substrates

    Institute of Scientific and Technical Information of China (English)

    L(U) Ye-gang; DENG Shui-feng; GONG Lun-jun; YANG Jian-tao

    2006-01-01

    A Landau-Ginsburg-Devonshire(LD)-type thermodynamic theory was used to describe the effect of external stress on phase diagrams and dielectric properties of epitaxial ferroelectric thin films grown on orthorhombic substrates which induce nonequally biaxial misfit strains in the films plane. The "misfit strain-external stress" and "external stress-temperature" phase diagrams were constructed for single-domain BaTiO3(BT) and PbTiO3(PT) thin films. It is shown that the external stress may lead to the rotation of the spontaneous polarization and a gradual change of its magnitude, which may result in phase transition. Nonequally biaxial misfit strains dependence of the stability of polarization states may be governed by external stress. At room temperature,stress-induced ferroelectric/paraelectric phase transition which occurs in film on cubic substrate does not take place in the ferroelectric thin film grown on orthorhombic substrate. It is also shown that the nonequally misfit strains in the film plane may lead to the appearance of new phases which do not form in films grown on cubic substrates under external stress. The dependence of the dielectric response on the external stress is also studied. It is shown that the dielectric constants of single-domain PT and BT films are very sensitive to the external stress under the given anisotropic misfit strains-temperature conditions. It presents theoretical evidence that the external stress and anisotropic misfit strains can be employed for improving the thin films physical properties.

  10. CVD growth and field emission properties of nanostructured carbon films

    International Nuclear Information System (INIS)

    An investigation of the growth mechanisms, electronical and structural properties, and field emissions of carbon films obtained by chemical vapour deposition showed that field emissions from films composed of spatially oriented carbon nanotubes and plate-like graphite nanocrystals exhibit non-metallic behaviour. The experimental evidence of work function local reduction for carbon film materials is reported here. A model of the emission site is proposed and the mechanism of field emission from nanostructured carbon materials is described. In agreement with the model proposed here, the electron emission in different carbon materials results from sp3-like defects in an sp2 network of their graphite-like component. (author)

  11. Carbon nanotube thin film transistors based on aerosol methods

    International Nuclear Information System (INIS)

    We demonstrate a fabrication method for high-performance field-effect transistors (FETs) based on dry-processed random single-walled carbon nanotube networks (CNTNs) deposited at room temperature. This method is an advantageous alternative to solution-processed and direct CVD grown CNTN FETs, which allows using various substrate materials, including heat-intolerant plastic substrates, and enables an efficient, density-controlled, scalable deposition of as-produced single-walled CNTNs on the substrate directly from the aerosol (floating catalyst) synthesis reactor. Two types of thin film transistor (TFT) structures were fabricated to evaluate the FET performance of dry-processed CNTNs: bottom-gate transistors on Si/SiO2 substrates and top-gate transistors on polymer substrates. Devices exhibited on/off ratios up to 105 and field-effect mobilities up to 4 cm2 V-1 s-1. The suppression of hysteresis in the bottom-gate device transfer characteristics by means of thermal treatment in vacuum and passivation by an atomic layer deposited Al2O3 film was investigated. A 32 nm thick Al2O3 layer was found to be able to eliminate the hysteresis.

  12. Properties of nitrogen containing diamond-like carbon films

    International Nuclear Information System (INIS)

    Optical and mechanical properties of nitrogen containing diamond- like carbon (NC-DLC) films deposited by RF plasma decomposition of CH4:H2:N2 gas mixture were investigated. Nitrogen was incorporated into DLC films both during film growth and after deposition of film by implantation of nitrogen ions. It was shown that both optical and mechanical properties of the films strongly depend on nitrogen content in the films. In some cases the mechanical properties of nitrogen implanted films were improved in comparison with unimplanted samples. (author). 7 refs., 2 figs

  13. SPM Study and Growth Mechanism of Graphene Directly CVD-Grown on h-BN Film

    Science.gov (United States)

    Song, Young Jae; Kim, Minwoo; Wu, Qinke; Lee, Joohyun; Lee, Sungjoo; Wang, Min

    2014-03-01

    We present our Scanning Tunneling Microscopy (STM)/Spectroscopy (STS) and Kelvin Probe Force Microscope (KPFM) study for graphene directly CVD-grown on h-BN film. High resolution STM image shows perfect honeycomb lattice structure of graphene on top surface and Moiré pattern indicating the structural interference patter with the underlying h-BN crystal. Non-disturbed electronic structure of graphene on h-BN film is also confirmed by spatially-resolved STS measurements, which show very sharp and symmetric V shape with a Dirac point at Fermi level. To confirm the graphene growth mechanism on h-BN film/Cu foil, careful Atomic Force Microscopy (AFM) and Kelvin Probe Force Microscopy (KPFM) measurements were performed on different thickness of h-BN film on a SiO2 substrate to unveil the catalytic origin of graphene growth on h-BN/Cu. This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Korean government (MSIP) (Grant Numbers: 2009-0083540, 2011-0030046, 2012R1A1A2020089 and 2012R1A1A1041416).

  14. Nondestructive characterization of GaN films grown at low and high temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Yan, C.H.; Yao, H.W.; Hove, J.M. van; Wowchak, A.M.; Chow, P.P.; Han, J.; Zavada, J.M.

    2000-07-01

    GaN films grown on GaAs and sapphire substrates by molecular beam epitaxy (MBE) and metalorganic vapor phase epitaxy (MOVPE) at both low and high temperatures (LT and HT) were characterized by Raman scattering and variable angle spectroscopic ellipsometry (VASE). Optical phonon spectra of GaN films are obtained through back-scattering geometry. Crystal quality of these films was qualitatively examined using phonon line-width. Phonon spectra showed that the HT GaN has wurtzite crystal structure, while LT GaN and GaN/GaAs have cubic-like structures. Thickness nonuniformity and defect-related absorption can be characterized by pseudo dielectric functions directly. Surface roughness also can be determined by using an effective-medium approximation (EMA) over-layer in a VASE analysis. Anisotropic optical constants of GaN, both ordinary and extraordinary, were obtained in the spectral range of 0.75 to 6.5 eV with the consideration of surface roughness, through the small and large angles of incidence, respectively. The film thickness of the GaN was accurately determined via the analysis as well.

  15. Induced polarized state in intentionally grown oxygen deficient KTaO{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Mota, D. A.; Romaguera-Barcelay, Y.; Tkach, A.; Agostinho Moreira, J.; Almeida, A. [IFIMUP and IN-Institute of Nanoscience and Nanotechnology, Department of Physics and Astronomy, Faculty of Science of University of Porto, Rua do Campo Alegre, 687, 4169-007 Porto (Portugal); Perez de la Cruz, J. [INESC TEC, Rua do Campo Alegre, 687, 4169-007 Porto (Portugal); Vilarinho, P. M. [Department of Ceramics and Glass Engineering, CICECO, University of Aveiro, 3810-193 Aveiro (Portugal); Tavares, P. B. [Centro de Quimica, Universidade de Tras-os-Montes e Alto Douro, Apartado 1013, 5001-801 Vila Real (Portugal)

    2013-07-21

    Deliberately oxygen deficient potassium tantalate thin films were grown by RF magnetron sputtering on Si/SiO{sub 2}/Ti/Pt substrates. Once they were structurally characterized, the effect of oxygen vacancies on their electric properties was addressed by measuring leakage currents, dielectric constant, electric polarization, and thermally stimulated depolarization currents. By using K{sub 2}O rich KTaO{sub 3} targets and specific deposition conditions, KTaO{sub 3-{delta}} oxygen deficient thin films with a K/Ta = 1 ratio were obtained. Room temperature X-ray diffraction patterns show that KTaO{sub 3-{delta}} thin films are under a compressive strain of 2.3% relative to KTaO{sub 3} crystals. Leakage current results reveal the presence of a conductive mechanism, following the Poole-Frenkel formalism. Furthermore, dielectric, polarization, and depolarization current measurements yield the existence of a polarized state below T{sub pol} {approx} 367 Degree-Sign C. A Cole-Cole dipolar relaxation was also ascertained apparently due to oxygen vacancies induced dipoles. After thermal annealing the films in an oxygen atmosphere at a temperature above T{sub pol}, the aforementioned polarized state is suppressed, associated with a drastic oxygen vacancies reduction emerging from annealing process.

  16. Thermal stability of MBE-grown epitaxial MoSe2 and WSe2 thin films

    Science.gov (United States)

    Chang, Young Jun; Choy, Byoung Ki; Phark, Soo-Hyon; Kim, Minu

    Layered transition metal dichalcogenides (TMDs) draw much attention, because of its unique optical properties and band structures depending on the layer thicknesses. However, MBE growth of epitaxial films demands information about thermal stability of stoichiometry and related electronic structure for high temperature range. We grow epitaxial MoSe2 and WSe2 ultrathin films by using molecular beam epitaxy (MBE). We characterize stoichiometry of films grown at various growth temperature by using various methods, XPS, EDX, and TOF-MEIS. We further test high temperature stability of electronic structure for those films by utilizing in-situ ellipsometry attached to UHV chamber. We discuss threshold temperatures up to 700~1000oC, at which electronic phases changes from semiconductor to metal due to selenium deficiency. This information can be useful for potential application of TMDs for fabrication of Van der Waals multilayers and related devices. This research was supported by Nano.Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning. (2009-0082580), NRF-2014R1A1A1002868.

  17. Electronic properties of high-temperature superconducting thin films grown by pulsed laser deposition

    Science.gov (United States)

    Abrecht, M.; Ariosa, Daniel; Cloetta, D.; Margaritondo, Giorgio; Pavuna, Davor

    2002-11-01

    We use a pulsed laser deposition (PLD) setup to grow ultra-thin films of high temperature superconductors (HTSC) and transfer them in-situ into a photoemission chamber. Photoemission measurements on such films allow us to study non-cleavable materials, but can also give insights into aspects never measured before, like the influence of strain on the low energy electronic structure. Systematic studies of many different materials grown as films showed that Bi2Sr2CaCu2O8+x, Bi2Sr2Cu1O6+x, Bi2Sr2Ca2Cu3O10+x and La2-xSrxCuO4 films exhibit a conductor-like Fermi edge, but materials containing chains (such as YBa2Cu3O7-x) are prone to very rapid surface degradation, possibly related to critical oxygen loss at the surface. Among HTSC materials, La2-xSrxCuO4 is extremely interesting because of its rather simple structure and the fact that its critical temperature Tc can be enhanced by epitaxial strain. Here we present our first high resolution angular resolved photoemission spectroscopy (ARPES) results on 8 unit-cell thin La2-xSrxCuO4 films on SrLaAlO4 [001] substrates. Due to the lattice mismatch, such films are compressed in the copper oxygen planes and expanded in the c-axis direction. Results show a surprisingly modified Fermi surface compared to the one of non-strained samples.

  18. Purification of Single-walled Carbon Nanotubes Grown by a Chemical Vapour Deposition (CVD) Method

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    A procedure for purification of single-walled carbon nanotubes(SWNTs) grown by the chemical vapour deposition (CVD) of carbon monooxide has been developed. Based on the result from TGA/DTA of as-prepared sample, the oxidation temperature was determined. The process included sonication, oxidation and acid washing steps. The purity and yield after purification were determined and estimated by TEM. Moreover, for the first time, a loop structure for CVD SWNTs has been observed.

  19. Surface reconstructions and transport of epitaxial PtLuSb (001) thin films grown by MBE

    Science.gov (United States)

    Patel, Sahil J.; Logan, John A.; Harrington, Sean D.; Schultz, Brian D.; Palmstrøm, Chris J.

    2016-02-01

    This work presents the surface reconstructions and transport properties of the topological insulator PtLuSb grown on Al0.1In0.9Sb/GaAs (001). Two stable surface reconstructions, (1×3) and c(2×2), were observed on PtLuSb (001) surfaces. Antimony-dimerization was determined to be the nature of the (1×3) surface reconstruction as evidenced by chemical binding energy shifts in the antimony 4d core-level for surface bonding components. The two surface reconstructions were studied as a function of Sb4 overpressure and substrate temperature to create a reconstruction phase diagram. From this reconstruction phase diagram, a growth window from 320 °C to 380 °C using an antimony overpressure was identified. Within this window, the highest quality films were grown at a growth temperature of 380 °C. These films exhibited lower p-type carrier concentrations as well as relatively high hole mobilities.

  20. Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors

    Science.gov (United States)

    Härkönen, J.; Ott, J.; Mäkelä, M.; Arsenovich, T.; Gädda, A.; Peltola, T.; Tuovinen, E.; Luukka, P.; Tuominen, E.; Junkes, A.; Niinistö, J.; Ritala, M.

    2016-09-01

    In this report we cover two special applications of Atomic Layer Deposition (ALD) thin films to solve these challenges of the very small size pixel detectors. First, we propose to passivate the p-type pixel detector with ALD grown Al2O3 field insulator with a negative oxide charge instead of using the commonly adopted p-stop or p-spray technologies with SiO2, and second, to use plasma-enhanced ALD grown titanium nitride (TiN) bias resistors instead of the punch through biasing structures. Surface passivation properties of Al2O3 field insulator was studied by Photoconductive Decay (PCD) method and our results indicate that after appropriate annealing Al2O3 provides equally low effective surface recombination velocity as thermally oxidized Si/SiO2 interface. Furthermore, with properly designed annealing steps, the TiN thin film resistors can be tuned to have up to several MΩ resistances with a few μm of physical size required in ultra-fine pitch pixel detectors.

  1. Comparisons of Structural and Optical Properties of ZnO Films Grown on Sapphire and Si(001)

    Institute of Scientific and Technical Information of China (English)

    邱东江; 吴惠桢; 徐晓玲; 陈奶波

    2002-01-01

    Zinc oxide films were grown on sapphire and Si(001) substrates by reactive electron beam evaporation at low substrate temperatures. Atomic force microscopy (AFM), x-ray diffraction (XRD), and photoluminescence excitation (PLE) are employed to characterize the as-grown films. The AFM measurements have shown that all of the ZnO films present pillar-like growth properties, but the dimensional uniformity of the ZnO crystal pillars grown on sapphire was better than that on Si(001). The XRD results indicated that the prepared ZnO films both on sapphire and Si(001) were all highly c-axis oriented; the linewidths of ZnO (002) are only 0.19° and 0.28°, respectively. The PLE characterizations revealed the continuum absorption of the samples grown on sapphire. However, in the PLE spectra of the ZnO films grown on Si(001) substrates, a broad peak appears at the high-energy region, which indicates the formation of ZnO quantum dot structures on Si(001).

  2. Electrochemical impedance spectroscopy on nanostructured carbon electrodes grown by supersonic cluster beam deposition

    Energy Technology Data Exchange (ETDEWEB)

    Bettini, Luca Giacomo; Bardizza, Giorgio; Podesta, Alessandro; Milani, Paolo; Piseri, Paolo, E-mail: piseri@mi.infn.it [Universita degli Studi di Milano, Dipartimento di Fisica and CIMaINa (Italy)

    2013-02-15

    Nanostructured porous films of carbon with density of about 0.5 g/cm{sup 3} and 200 nm thickness were deposited at room temperature by supersonic cluster beam deposition (SCBD) from carbon clusters formed in the gas phase. Carbon film surface topography, determined by atomic force microscopy, reveals a surface roughness of 16 nm and a granular morphology arising from the low kinetic energy ballistic deposition regime. The material is characterized by a highly disordered carbon structure with predominant sp2 hybridization as evidenced by Raman spectroscopy. The interface properties of nanostructured carbon electrodes were investigated by cyclic voltammetry and electrochemical impedance spectroscopy employing KOH 1 M solution as aqueous electrolyte. An increase of the double layer capacitance is observed when the electrodes are heat treated in air or when a nanostructured nickel layer deposited by SCBD on top of a sputter deposited film of the same metal is employed as a current collector instead of a plain metallic film. This enhancement is consistent with an improved charge injection in the active material and is ascribed to the modification of the electrical contact at the interface between the carbon and the metal current collector. Specific capacitance values up to 120 F/g have been measured for the electrodes with nanostructured metal/carbon interface.

  3. Dynamic scaling and optical properties of Zn(S, O,OH) thin film grown by chemical bath deposition

    Institute of Scientific and Technical Information of China (English)

    Zhang Yi; Li Bo-Yan; Dang Xiang-Yu; Wu Li; Jin Jing; Li Feng-Yan; Ao Jian-Ping; Sun Yun

    2011-01-01

    The scaling behavior and optical properties of Zn(S,O and OH) thin films deposited on soda-lime glass substrates by chemical bath deposition method were studied by combined roughness measurements,scanning electron microscopy and optical properties measurement.From the scaling behaviour,the value of growth scaling exponent β,0.38±0.06,was determined.This value indicated that the Zn(S,O,OH) film growth in the heterogeneous process was influenced by the surface diffusion and shadowing effect.Results of the optical properties measurements disclosed that the transmittance of the film was in the region of 70%-88% and the optical properties of the film grown for 40 min were better than those grown under other conditions.The energy band gap of the film deposited with 40 min was around 3.63 eV.

  4. Electrocatalytic activity of Pt grown by ALD on carbon nanotubes for Si-based DMFC applications

    DEFF Research Database (Denmark)

    Johansson, Alicia Charlotte; Dalslet, Bjarke Thomas; Yang, R.B.;

    2012-01-01

    We present an anode design for silicon-based direct methanol fuel cell (DMFC) applications. Platinum was deposited conformally by atomic layer deposition (ALD) onto vertically aligned, nitrogendoped multi-walled carbon nanotubes (MWCNTs) grown on porous silicon. The deposition was carried out...

  5. Preparation of Electrically Conductive Polystyrene/Carbon Nanofiber Nanocomposite Films

    Science.gov (United States)

    Sun, Luyi; O'Reilly, Jonathan Y.; Tien, Chi-Wei; Sue, Hung-Jue

    2008-01-01

    A simple and effective approach to prepare conductive polystyrene/carbon nanofiber (PS/CNF) nanocomposite films via a solution dispersion method is presented. Inexpensive CNF, which has a structure similar to multi-walled carbon nanotubes, is chosen as a nanofiller in this experiment to achieve conductivity in PS films. A good dispersion is…

  6. Growth of graphene films from non-gaseous carbon sources

    Science.gov (United States)

    Tour, James; Sun, Zhengzong; Yan, Zheng; Ruan, Gedeng; Peng, Zhiwei

    2015-08-04

    In various embodiments, the present disclosure provides methods of forming graphene films by: (1) depositing a non-gaseous carbon source onto a catalyst surface; (2) exposing the non-gaseous carbon source to at least one gas with a flow rate; and (3) initiating the conversion of the non-gaseous carbon source to the graphene film, where the thickness of the graphene film is controllable by the gas flow rate. Additional embodiments of the present disclosure pertain to graphene films made in accordance with the methods of the present disclosure.

  7. Electrical and optical properties of carbon-doped GaN grown by MBE on MOCVD GaN templates using a CCl4 dopant source

    OpenAIRE

    Armitage, Rob; Yang, Qing; Feick, Henning; Park, Yeonjoon; Weber, Eicke R.

    2002-01-01

    Carbon-doped GaN was grown by plasma-assisted molecular-beam epitaxy using carbon tetrachloride vapor as the dopant source. For moderate doping mainly acceptors were formed, yielding semi-insulating GaN. However at higher concentrations p-type conductivity was not observed, and heavily doped films (>5x10^20 cm-3) were actually n-type rather than semi-insulating. Photoluminescence measurements showed two broad luminescence bands centered at 2.2 and 2.9 eV. The intensity of both bands inc...

  8. Characterization of AISI 1005 corrosion films grown under cyclic voltammetry of low sulfide ion concentrations

    International Nuclear Information System (INIS)

    Highlights: •The corrosion of AISI 1005 in sulfide solutions was investigated. •The mechanism of film growth on carbon steel in sulfide solutions was studied. •Film growth was characterized using SEM, EDX, XRD and Mössbauer spectroscopy. •Growth of AISI 1005 corrosion films under cyclic voltammetry. -- Abstract: The mechanism of AISI 1005 corrosion in sulfide ion solutions has been investigated using cyclic voltammetry, electrochemical impedance spectroscopy, X-ray diffraction (XRD) and Mössbauer spectroscopy (MS). The proposed mechanism occurs with the initial formation of oxygenated ferrous species followed by adsorption of HS− species, precipitation of iron monosulfides and their partial conversion to bisulfide iron. This mechanism was demonstrated by XRD results that revealed Fe-O and Fe-S phases and by MS results that detected pyrite as the major proportion (94%) of the iron species in the corrosion product

  9. ELECTROCHEMICAL INVESTIGATION ON CARBON NANOTUBE FILM WITH DIFFERENT PRETREATMENTS

    Institute of Scientific and Technical Information of China (English)

    C.G. Hu; W.L. Wang; Y. Ma; W. Zhu

    2003-01-01

    Wide potential windows were found at carbon nanotube film electrodes in neutral solutions after being treated with nitric acid and mixed acid. Electrochemical reversibility was investigated at carbon nanotube films with different pretreatments for ferri/ferrocyanide and quinone /hydroquinone. Carbon nanotube film electrodes presented quasi-reversible electrochemical behavior for both electrolytes. In the range of scan rate, carbon nanotube film electrodes treated with acids showed heterogeneous electron-transfer properties, which was mainly controlled by its electron state density on the surface of the film. On the whole, the carbon nanotube electrode with nitric acid treatment presented the best electrochemical behaviors, so we chose it as an analytical electrode to determine the trace compound in dilute solution. The results demonstrated that this new electrode material exhibits superior performance characteristics for the detection of azide anion.

  10. Grain size dependent mechanical properties of nanocrystalline diamond films grown by hot-filament CVD

    Energy Technology Data Exchange (ETDEWEB)

    Wiora, M; Bruehne, K; Floeter, A; Gluche, P; Willey, T M; Kucheyev, S O; Van Buuren, A W; Hamza, A V; Biener, J; Fecht, H

    2008-08-01

    Nanocrystalline diamond (NCD) films with a thickness of {approx}6 {micro}m and with average grain sizes ranging from 60 to 9 nm were deposited on silicon wafers using a hot-filament chemical vapor deposition (HFCVD) process. These samples were then characterized with the goal to identify correlations between grain size, chemical composition and mechanical properties. The characterization reveals that our films are phase pure and exhibit a relatively smooth surface morphology. The levels of sp{sup 2}-bonded carbon and hydrogen impurities are low, and showed a systematic variation with the grain size. The hydrogen content increases with decreasing grain size, whereas the sp{sup 2} carbon content decreases with decreasing grain size. The material is weaker than single crystalline diamond, and both stiffness and hardness decrease with decreasing grain size. These trends suggest gradual changes of the nature of the grain boundaries, from graphitic in the case of the 60 nm grain size material to hydrogen terminated sp{sup 3} carbon for the 9 nm grain size material. The films exhibit low levels of internal stress and freestanding structures with a length of several centimeters could be fabricated without noticeable bending.

  11. Structural and optical characterization of ZrO2 thin films grown on silicon and quartz substrates

    Science.gov (United States)

    Hojabri, Alireza

    2016-09-01

    Zirconium oxide thin films were grown successfully by thermal annealing of zirconium thin films deposited on quartz and silicon substrates by direct current magnetron sputtering technique. The structural and optical properties in relation to thermal annealing times were investigated. The X-ray diffraction patterns revealed that structure of films changes from amorphous to crystalline by increase of annealing times in range 60-240 min. The composition of films was determined by Rutherford back scattering spectroscopy. Atomic force microscopy results exhibited that surface morphology and roughness of films depend on the annealing time. The refractive index of the films was calculated using Swanepoel's method. The optical band gap energy of annealed films decreased from 5.50 to 5.34 eV with increasing thermal annealing time.

  12. Field emission characteristics of vertically aligned carbon nanotubes with honeycomb configuration grown onto glass substrate with titanium coating

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Yung-Jui [Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan (China); Chang, Hsin-Yueh; Chang, Hsuan-Chen [Department of Electronic and computer Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan (China); Shih, Yi-Ting; Su, Wei-Jhih [Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan (China); Ciou, Chen-Hong [Department of Electronic and computer Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan (China); Chen, Yi-Ling [Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan (China); Honda, Shin-ichi [Graduate School of Engineering, University of Hyogo, Himeji, Hyogo 671-2280 (Japan); Huang, Ying-Sheng [Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan (China); Department of Electronic and computer Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan (China); Lee, Kuei-Yi, E-mail: kylee@mail.ntust.edu.tw [Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan (China); Department of Electronic and computer Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan (China)

    2014-03-15

    Highlights: • We have successfully designed the honeycomb patterns on glass substrate by photolithography technique. • Honeycomb-VACNTs were synthesized successfully onto glass substrate by using thermal CVD and covered different Ti films on VACNTs by e-beam evaporation. • After coating the Ti films, the current density reached 7 mA/cm{sup 2} when the electric field was 2.5 V/μm. • The fluorescence of VACNTs with Ti 15 nm films exhibits the high brightness screen and emission uniformity. -- Abstract: Carbon nanotubes (CNTs) were grown successfully onto a glass substrate using thermal chemical vapor deposition (TCVD) with C{sub 2}H{sub 2} gas at 700 °C. The synthesized CNTs exhibited good crystallinity and a vertically aligned morphology. The vertically aligned CNTs (VACNTs) were patterned with a honeycomb configuration using photolithography and characterized using field emission (FE) applications. Owing to the electric field concentration, the FE current density of VACNTs with honeycomb configuration was higher than that of the un-patterned VACNTs. Ti was coated onto the VACNT surface utilizing the relatively lower work function property to enhance the FE current density. The FE current density reached up to 7.0 mA/cm{sup 2} at an applied electric field of 2.5 V/μm. A fluorescent screen was monitored to demonstrate uniform FE VACNTs with a honeycomb configuration. The designed field emitter provided an admirable example for FE applications.

  13. Synthesis of diamond-like carbon films on Si substrates by photoemission-assisted plasma-enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Meng [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan); Ogawa, Shuichi, E-mail: ogasyu@tagen.tohoku.ac.jp [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan); Takabayashi, Susumu; Otsuji, Taiichi [Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan); Core Research for Evolutionary Science and Technology, Japan Science and Technology Agency, K' s Gobancho Bldg., 7 Gobancho, Chiyoda-ku, Tokyo 102-0076 (Japan); Takakuwa, Yuji [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan)

    2012-11-15

    Diamond-like carbon (DLC) films grown by photoemission-assisted plasma-enhanced chemical vapor deposition (PA-PECVD) have attracted attention as a gate insulator for graphene-channel field effect transistors (GFETs). In this study, the possibility of using PA-PECVD to grow insulating DLC films for GFETs is explored by focusing on the growth rate and uniformity of DLC films on Si substrates. Initially, the DLC films were formed at a constant rate but the growth rate decreased rapidly when the thickness reached approximately 400 nm. This is because of a decrease in photoelectron emissions from the Si substrates as they are covered by DLC films which absorb UV photons. However, the DLC films formed uniformly at thicknesses less than 16%. This result indicates that PA-PECVD is a promising method for growing DLC films as the gate dielectric layer of GFETs.

  14. Ag films grown by remote plasma enhanced atomic layer deposition on different substrates

    International Nuclear Information System (INIS)

    Silver (Ag) layers were deposited by remote plasma enhanced atomic layer deposition (PALD) using Ag(fod)(PEt3) (fod = 2,2-dimethyl-6,6,7,7,8,8,8-heptafluorooctane-3,5-dionato) as precursor and hydrogen plasma on silicon substrate covered with thin films of SiO2, TiN, Ti/TiN, Co, Ni, and W at different deposition temperatures from 70  to 200 °C. The deposited silver films were analyzed by x-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), scanning electron microscopy (SEM), transmission electron microscopy (TEM) with energy dispersive x-ray spectroscopy, four point probe measurement, ellipsometric measurement, x-ray fluorescence (XRF), and x-ray diffraction (XRD). XPS revealed pure Ag with carbon and oxygen contamination close to the detection limit after 30 s argon sputtering for depositions made at 120 and 200 °C substrate temperatures. However, an oxygen contamination was detected in the Ag film deposited at 70 °C after 12 s argon sputtering. A resistivity of 5.7 × 10−6 Ω cm was obtained for approximately 97 nm Ag film on SiO2/Si substrate. The thickness was determined from the SEM cross section on the SiO2/Si substrate and also compared with XRF measurements. Polycrystalline cubic Ag reflections were identified from XRD for PALD Ag films deposited at 120 and 200 °C. Compared to W surface, where poor adhesion of the films was found, Co, Ni, TiN, Ti/TiN and SiO2 surfaces had better adhesion for silver films as revealed by SEM, TEM, and AFM images

  15. Ag films grown by remote plasma enhanced atomic layer deposition on different substrates

    Energy Technology Data Exchange (ETDEWEB)

    Amusan, Akinwumi A., E-mail: akinwumi.amusan@ovgu.de; Kalkofen, Bodo; Burte, Edmund P. [Institute of Micro and Sensor Systems, Otto-von-Guericke University, Universitätsplatz 2, 39106 Magdeburg (Germany); Gargouri, Hassan; Wandel, Klaus; Pinnow, Cay [SENTECH Instruments GmbH, Schwarzschildstraße 2, 12489 Berlin (Germany); Lisker, Marco [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany)

    2016-01-15

    Silver (Ag) layers were deposited by remote plasma enhanced atomic layer deposition (PALD) using Ag(fod)(PEt{sub 3}) (fod = 2,2-dimethyl-6,6,7,7,8,8,8-heptafluorooctane-3,5-dionato) as precursor and hydrogen plasma on silicon substrate covered with thin films of SiO{sub 2}, TiN, Ti/TiN, Co, Ni, and W at different deposition temperatures from 70  to 200 °C. The deposited silver films were analyzed by x-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), scanning electron microscopy (SEM), transmission electron microscopy (TEM) with energy dispersive x-ray spectroscopy, four point probe measurement, ellipsometric measurement, x-ray fluorescence (XRF), and x-ray diffraction (XRD). XPS revealed pure Ag with carbon and oxygen contamination close to the detection limit after 30 s argon sputtering for depositions made at 120 and 200 °C substrate temperatures. However, an oxygen contamination was detected in the Ag film deposited at 70 °C after 12 s argon sputtering. A resistivity of 5.7 × 10{sup −6} Ω cm was obtained for approximately 97 nm Ag film on SiO{sub 2}/Si substrate. The thickness was determined from the SEM cross section on the SiO{sub 2}/Si substrate and also compared with XRF measurements. Polycrystalline cubic Ag reflections were identified from XRD for PALD Ag films deposited at 120 and 200 °C. Compared to W surface, where poor adhesion of the films was found, Co, Ni, TiN, Ti/TiN and SiO{sub 2} surfaces had better adhesion for silver films as revealed by SEM, TEM, and AFM images.

  16. Magnetic and structural properties of Co2FeAl thin films grown on Si substrate

    Science.gov (United States)

    Belmeguenai, Mohamed; Tuzcuoglu, Hanife; Gabor, Mihai; Petrisor, Traian; Tiusan, Coriolan; Berling, Dominique; Zighem, Fatih; Mourad Chérif, Salim

    2015-01-01

    The correlation between magnetic and structural properties of Co2FeAl (CFA) thin films of different thicknesses (10 nmgrown at room temperature on MgO-buffered Si/SiO2 substrates and annealed at 600 °C has been studied. x-ray diffraction (XRD) measurements revealed an (011) out-of-plane textured growth of the films. The deduced lattice parameter increases with the film thickness. Moreover, pole figures showed no in-plane preferential growth orientation. The magneto-optical Kerr effect hysteresis loops showed the presence of a weak in-plane uniaxial anisotropy with a random easy axis direction. The coercive field, measured with the applied field along the easy axis direction, and the uniaxial anisotropy field increase linearly with the inverse of the CFA thickness. The microstrip line ferromagnetic resonance measurements for in-plane and perpendicular applied magnetic fields revealed that the effective magnetization and the uniaxial in-plane anisotropy field follow a linear variation versus the inverse CFA thickness. This allows deriving a perpendicular surface anisotropy coefficient of -1.86 erg/cm2.

  17. Low-temperature-grown continuous graphene films from benzene by chemical vapor deposition at ambient pressure

    Science.gov (United States)

    Jang, Jisu; Son, Myungwoo; Chung, Sunki; Kim, Kihyeun; Cho, Chunhum; Lee, Byoung Hun; Ham, Moon-Ho

    2015-12-01

    There is significant interest in synthesizing large-area graphene films at low temperatures by chemical vapor deposition (CVD) for nanoelectronic and flexible device applications. However, to date, low-temperature CVD methods have suffered from lower surface coverage because micro-sized graphene flakes are produced. Here, we demonstrate a modified CVD technique for the production of large-area, continuous monolayer graphene films from benzene on Cu at 100-300 °C at ambient pressure. In this method, we extended the graphene growth step in the absence of residual oxidizing species by introducing pumping and purging cycles prior to growth. This led to continuous monolayer graphene films with full surface coverage and excellent quality, which were comparable to those achieved with high-temperature CVD; for example, the surface coverage, transmittance, and carrier mobilities of the graphene grown at 300 °C were 100%, 97.6%, and 1,900-2,500 cm2 V-1 s-1, respectively. In addition, the growth temperature was substantially reduced to as low as 100 °C, which is the lowest temperature reported to date for pristine graphene produced by CVD. Our modified CVD method is expected to allow the direct growth of graphene in device manufacturing processes for practical applications while keeping underlying devices intact.

  18. IR study on surface chemical properties of catalytic grown carbon nanotubes and nanofibers

    Institute of Scientific and Technical Information of China (English)

    Li-hua TENG; Tian-di TANG

    2008-01-01

    In this study, the surface chemical properties of carbon nanotubes (CNTs) and carbon nanofibers (CNFs) grown by catalytic decomposition of methane on nickel and cobalt based catalysts were studied by DRIFT (Diffuse Reflectance Infrared Fourier Transform) and transmission Infrared (IR) spectroscopy. The results show that the surface exists not only carbon-hydrogen groups, but also carboxyl, ketene or quinone (carbonyl) oxygen-containing groups. These functional groups were formed in the process of the material growth, which result in large amount of chemical defect sites on the walls.

  19. Characterization for rbs of Titanium Oxide thin films grown by Dip Coating in a coloidal suspension of nano structured Titanium Oxide

    International Nuclear Information System (INIS)

    The depth of Titanium Oxide thin films grown by Dip Coating in a coloidal suspension of nano structured Titanium Oxide was characterized using Rutherford Backscattering Spectrometry. Film depths are compared in function of bath and suspension parameters

  20. Ultrafast carrier dynamics and the role of grain boundaries in polycrystalline silicon thin films grown by molecular beam epitaxy

    Science.gov (United States)

    Titova, Lyubov V.; Cocker, Tyler L.; Xu, Sijia; Baribeau, Jean-Marc; Wu, Xiaohua; Lockwood, David J.; Hegmann, Frank A.

    2016-10-01

    We have used time-resolved terahertz spectroscopy to study microscopic photoconductivity and ultrafast photoexcited carrier dynamics in thin, pure, non-hydrogenated silicon films grown by molecular beam epitaxy on quartz substrates at temperatures ranging from 335 °C to 572 °C. By controlling the growth temperature, thin silicon films ranging from completely amorphous to polycrystalline with minimal amorphous phase can be achieved. Film morphology, in turn, determines its photoconductive properties: in the amorphous phase, carriers are trapped in bandtail states on sub-picosecond time scales, while the carriers excited in crystalline grains remain free for tens of picoseconds. We also find that in polycrystalline silicon the photoexcited carrier mobility is carrier-density-dependent, with higher carrier densities mitigating the effects of grain boundaries on inter-grain transport. In a film grown at the highest temperature of 572 °C, the morphology changes along the growth direction from polycrystalline with needles of single crystals in the bulk of the film to small crystallites interspersed with amorphous silicon at the top of the film. Depth profiling using different excitation wavelengths shows corresponding differences in the photoconductivity: the photoexcited carrier lifetime and mobility are higher in the first 100-150 nm from the substrate, suggesting that thinner, low-temperature grown polycrystalline silicon films are preferable for photovoltaic applications.

  1. Delafossite CuFeO2 thin films electrochemically grown from a DMSO based solution

    International Nuclear Information System (INIS)

    Highlights: • A detailed electrochemical study about the electrodeposition of CuFeO2 from DMSO solution is presented. • The use of a precise quantity of chloride ion as complexing agent is decisive in order to obtain stoichiometric compounds (Cu:Fe ratio 1:1). • As-grown compounds were amorphous. Thus, a thermal treatment was required in order to obtain crystalline CuFeO2 with delafossite structure. • The formation of CuFeO2 was confirmed by XRD and XPS analyses. • Through optical measurements, four absorption in different spectrum regions were characterized: A IR absorption (Eg(IR) = 1.64 eV), two visible absorptions (Egdir(vis) = 2.35 eV, and Egind(vis) = 2.03 eV) and an UV absorption (Egind(UV) = 3.37 eV). - Abstract: This study shows the results obtained in the direct electrodeposition of CuFeO2 thin films from a DMSO based solution. First, a detailed electrochemical study was carried out in order to determinate the best condition for the CuFeO2 electrodeposition. The films were obtained potentiostatically from a 0.01 M CuCl2 + 0.005 M Fe(ClO4)3 + 0.1 M LiClO4 solution in the presence of molecular oxygen at 50 °C onto FTO/glass substrates. In all cases, the time of electrodeposition was 1000 s. The grown films presented a yellow-reddish color and exhibit an homogeneous aspect. Analyses of composition carried out through EDS, shown that a stoichiometric composition (atomic relation Cu:Fe = 1:1) is obtained at a potential of –0.6 V. However, as-grown films analyzed through XRD experiences did not evidence the presence of CuFeO2 compound presumably because it is amorphous. An annealing treatment at 650° C for 30 minutes in an argon atmosphere was necessary to transform the solid phase of the as grown films in crystalline CuFeO2. Furthermore, the presence of CuFeO2 has been confirmed through XPS analyses. UV-vis analyzes shown a ladder-like appearance due to the presence of several absorption edges from the IR to the UV spectrum region. The most

  2. Non-vacuum growth of graphene films using solid carbon source

    Energy Technology Data Exchange (ETDEWEB)

    Nguyen, Ba-Son [Department of Mechanical Engineering, National Cheng Kung University, 1 University Road, Tainan 701, Taiwan (China); Faculty of Mechatronics – Electronics, Lac Hong University, 10 Huynh Van Nghe Road, Bienhoa (Viet Nam); Lin, Jen-Fin, E-mail: jflin@mail.ncku.edu.tw, E-mail: dcperng@ee.ncku.edu.tw [Department of Mechanical Engineering, National Cheng Kung University, 1 University Road, Tainan 701, Taiwan (China); Center for Micro/Nano Science and Technology, National Cheng Kung University, 1 University Road, Tainan 701, Taiwan (China); Perng, Dung-Ching, E-mail: jflin@mail.ncku.edu.tw, E-mail: dcperng@ee.ncku.edu.tw [Center for Micro/Nano Science and Technology, National Cheng Kung University, 1 University Road, Tainan 701, Taiwan (China); Institute of Microelectronics and Electrical Engineering Department, National Cheng Kung University, 1 University Road, Tainan 701, Taiwan (China)

    2015-06-01

    This study demonstrates that air annealing can grow high-quality graphene films on the surface of polycrystalline nickel film with the help of an effective SiO{sub 2} capping layer. The number of graphene layers can be modulated by the amount of carbon embedded in the Ni film before annealing. Raman analysis results, transmission electron microscopy images, and electron diffraction patterns of the samples confirm that graphene films can be grown in air with an oxygen blocking layer and a 10 °C/s cooling rate in an open-vented rapid thermal annealing chamber or an open tube furnace. The high-quality low-defect air-annealing grown graphene is comparable to commercially available graphene grown via chemical vapor deposition. The proposed graphene growth using air annealing technique is simple and low-cost, making it highly attractive for mass production. It is transfer-free to a silicon substrate and can speed up graphene development, opening up new applications.

  3. Poly(lactide-co-trimethylene carbonate) and Polylactide/Polytrimethylene Carbonate Blown Films

    OpenAIRE

    Li, Hongli; Chang, Jiangping; Qin, Yuyue; Wu, Yan; Yuan, Minglong; Zhang, Yingjie

    2014-01-01

    In this work, poly(lactide-co-trimethylene carbonate) and polylactide/ polytrimethylene carbonate films are prepared using a film blowing method. The process parameters, including temperature and screw speed, are studied, and the structures and properties of the P(LA-TMC) and PLA/PTMC films are investigated. The scanning electron microscope (SEM) images show that upon improving the content of TMC and PTMC, the lamellar structures of the films are obviously changed. With increasing TMC monomer...

  4. Fabricating superconducting interfaces between artificially grown LaAlO3 and SrTiO3 thin films

    Directory of Open Access Journals (Sweden)

    Danfeng Li

    2014-01-01

    Full Text Available Realization of a fully metallic two-dimensional electron gas (2DEG at the interface between artificially grown LaAlO3 and SrTiO3 thin films has been an exciting challenge. Here we present for the first time the successful realization of a superconducting 2DEG at interfaces between artificially grown LaAlO3 and SrTiO3 thin films. Our results highlight the importance of two factors—the growth temperature and the SrTiO3 termination. We use local friction force microscopy and transport measurements to determine that in normal growth conditions the absence of a robust metallic state at low temperature in the artificially grown LaAlO3/SrTiO3 interface is due to the nanoscale SrO segregation occurring on the SrTiO3 film surface during the growth and the associated defects in the SrTiO3 film. By adopting an extremely high SrTiO3 growth temperature, we demonstrate a way to realize metallic, down to the lowest temperature, and superconducting 2DEG at interfaces between LaAlO3 layers and artificially grown SrTiO3 thin films. This study paves the way to the realization of functional LaAlO3/SrTiO3 superlattices and/or artificial LaAlO3/SrTiO3 interfaces on other substrates.

  5. Structural and Magnetic Phase Transitions in Manganese Arsenide Thin-Films Grown by Molecular Beam Epitaxy

    Science.gov (United States)

    Jaeckel, Felix Till

    Phase transitions play an important role in many fields of physics and engineering, and their study in bulk materials has a long tradition. Many of the experimental techniques involve measurements of thermodynamically extensive parameters. With the increasing technological importance of thin-film technology there is a pressing need to find new ways to study phase transitions at smaller length-scales, where the traditional methods are insufficient. In this regard, the phase transitions observed in thin-films of MnAs present interesting challenges. As a ferromagnetic material that can be grown epitaxially on a variety of technologically important substrates, MnAs is an interesting material for spintronics applications. In the bulk, the first order transition from the low temperature ferromagnetic alpha-phase to the beta-phase occurs at 313 K. The magnetic state of the beta-phase has remained controversial. A second order transition to the paramagnetic gamma-phase takes place at 398 K. In thin-films, the anisotropic strain imposed by the substrate leads to the interesting phenomenon of coexistence of alpha- and beta-phases in a regular array of stripes over an extended temperature range. In this dissertation these phase transitions are studied in films grown by molecular beam epitaxy on GaAs (001). The films are confirmed to be of high structural quality and almost purely in the A0 orientation. A diverse set of experimental techniques, germane to thin-film technology, is used to probe the properties of the film: Temperature-dependent X-ray diffraction and atomic-force microscopy (AFM), as well as magnetotransport give insights into the structural properties, while the anomalous Hall effect is used as a probe of magnetization during the phase transition. In addition, reflectance difference spectroscopy (RDS) is used as a sensitive probe of electronic structure. Inductively coupled plasma etching with BCl3 is demonstrated to be effective for patterning MnAs. We show

  6. Studies to Enhance Superconductivity in Thin Film Carbon

    Science.gov (United States)

    Pierce, Benjamin; Brunke, Lyle; Burke, Jack; Vier, David; Steckl, Andrew; Haugan, Timothy

    2012-02-01

    With research in the area of superconductivity growing, it is no surprise that new efforts are being made to induce superconductivity or increase transition temperatures (Tc) in carbon given its many allotropic forms. Promising results have been published for boron doping in diamond films, and phosphorus doping in highly oriented pyrolytic graphite (HOPG) films show hints of superconductivity.. Following these examples in the literature, we have begun studies to explore superconductivity in thin film carbon samples doped with different elements. Carbon thin films are prepared by pulsed laser deposition (PLD) on amorphous SiO2/Si and single-crystal substrates. Doping is achieved by depositing from (C1-xMx) single-targets with M = B4C and BN, and also by ion implantation into pure-carbon films. Previous research had indicated that Boron in HOPG did not elicit superconducting properties, but we aim to explore that also in thin film carbon and see if there needs to be a higher doping in the sample if trends were able to be seen in diamond films. Higher onset temperatures, Tc , and current densities, Jc, are hoped to be achieved with doping of the thin film carbon with different elements.

  7. Optical properties of metal oxynitride thin films grown with atmospheric plasma deposition

    Science.gov (United States)

    Hovish, Michael Q.; Dauskardt, Reinhold H.

    2016-10-01

    Thin films of tantalum oxynitride (TaO x N y ) and titanium oxynitride (TiO x N y ) are deposited using atmospheric plasma deposition and a suite of optical properties are reported. Tantalum and titanium ethoxide are introduced into the afterglow of a radio-frequency capacitively coupled plasma, facilitating the growth of oxynitride films on silicon and polycarbonate at temperatures below 180 °C. The plasma power and nitrogen flow within the plasma are varied between 60 and 120 W and between 0.1 and 0.3 LPM respectively. We use spectroscopic ellipsometry to show that the optical properties of the metal oxynitride films grown in this study are comparable to those synthesized with sol-gel methods. Measurement of both the extinction coefficient and the transmission on polycarbonate substrates indicates good transparency in the visible wavelengths of light. Additionally, the refractive index increases when increasing the number of reactive nitrogen species within the discharge. We use x-ray photoelectron spectroscopy to correlate the higher indexes observed at large secondary gas flows to the presence of metal oxynitride bonding. Single layer anti-reflection coatings are deposited on silicon, with a five-fold and seven-fold reduction in reflection for TaO x N y and TiO x N y coatings, respectively. In total, we have found that the modulation of nitrogen concentration within the plasma discharge results in good control over optical constants. In addition, we observe similarities between films deposited with atmospheric plasma and those reported for sol-gel, indicating an alternative processing route where solution chemistries are currently applied.

  8. Carbon nitride films by RF plasma assisted PLD: Spectroscopic and electronic analysis

    International Nuclear Information System (INIS)

    Carbon nitride (CNx) thin films have been grown on Si by 193 nm ArF ns pulsed laser ablation of a pure graphite target in a low pressure atmosphere of a RF generated N2 plasma and compared with samples grown by PLD in pure nitrogen atmosphere. Composition, structure and bonding of the deposited materials have been evaluated by X-ray photoelectron spectroscopy (XPS), and Raman scattering. Significant chemical and micro-structural changes have been registered, associated to different nitrogen incorporation in the two types of films analyzed. The intensity of the reactive activated species is, indeed, increased by the presence of the bias confined RF plasma, as compared to the bare nitrogen atmosphere, thus resulting in a different nitrogen uptake in the growing films. The process has been also investigated by some preliminary optical emission studies of the carbon plume expanding in the nitrogen atmosphere. Optical emission spectroscopy reveals the presence of many excited species like C+ ions, C atoms, C2, N2; and CN radicals, and N2+ molecular ions, whose relative intensity appears to be increased in the presence of the RF plasma. The films were also characterised for electrical properties by the 'four-probe-test method' determining sheet resistivity and correlating surface conductivity with chemical composition.

  9. Superconducting property and Fe valence state of FeSe thick films grown from high temperature solution

    International Nuclear Information System (INIS)

    Highlights: → Thick FeSe films (1-2 μm) of pure β-phase were grown from high temperature solution with SeSn as flux. → Electron backscatter diffraction showed the films of high crystallinity. → Superconducting transition was observed with onset Tc of 6.1 K for as-grown films and rising to 6.9 K after post-growth annealing at 400 deg. C. → X-ray photoelectron spectroscopy showed that Fe had two valence states in FeSe and their ratio may have some correlation with the critical temperature. - Abstract: Thick FeSe films (1-2 μm) were grown from high temperature solution with SeSn as the flux. Electron backscatter diffraction confirmed the films of tetragonal β phase with high crystallinity. Superconducting transition was observed by magnetic measurements, with the onset Tc of 6.1 K for the as-grown films and rising to 6.9 K after post-growth annealing at 400 deg. C, which was still 1.5 K lower than the sintered powder samples. X-ray photoelectron spectroscopy showed that the Fe 2p3/2 binding energy in the FeSe compound was composed of two peaks at 707.8 eV and 706.6 eV, respectively. The former was close to the value of Fe in polarized ionic bonds, while the later had the typical value in metallic bondings. The ratio of the two bondings was 1.56 and 1.94 for the films and sintered powders, respectively. The critical temperature may have some correlation with the ratio of the two bondings. A lower average Fe valence was probably the cause for the lower Tc observed in thick films.

  10. Evidences for liquid encapsulation in PMMA ultra-thin film grown by liquid injection Photo-CVD

    OpenAIRE

    Manole, Claudiu Constantin; Marsan, Olivier; Charvillat, Cédric; Demetrescu, Ioana; Maury, Francis

    2013-01-01

    This paper deals with the characterization of ultra-thin films of PMMA grown by an original photoassisted Chemical Vapor Deposition process equipped with a pulsed liquid injection system to deliver the monomer. The nanometric thick films showed a good ability to encapsulate a liquid phase as microdroplets protected by a thin polymeric tight membrane in the form of blisters. Techniques that are capable to analyze these heterogeneous structures at micro- and nanoscopic scale such as Raman Confo...

  11. Surface phonon polariton characteristics of wurtzite ZnO thin film grown on silicon substrate

    Energy Technology Data Exchange (ETDEWEB)

    Ng, Sha Shiong; Ooi, Poh Kok; Lee, Sai Cheong; Abdullah, Mat Johar; Hassan, Zainuriah; Hassan, Haslan Abu [Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Penang (Malaysia)

    2012-05-15

    In this work, p-polarized far infrared attenuated total reflection (ATR) with Otto configuration technique is employed to study the surface phonon polariton (SPP) characteristics of wurtzite ZnO thin film grown on Si(111) substrate. One prominent dip corresponding to the leaky SPP mode of the ZnO is detected at 532 cm{sup -1}. The obtained result is in good agreement with the calculated ATR spectrum simulated based on the transfer matrix formulation. The origin of the observed dip is verified with the surface polariton dispersion curves based on a three anisotropic layer model (air-ZnO-Si). The results also reveal that the real SPP and the interface phonon polariton modes for this studied structure are barely observable experimentally. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  12. Thermal activation of nitrogen acceptors in ZnO thin films grown by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Dangbegnon, J.K.; Talla, K.; Botha, J.R. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth (South Africa)

    2010-06-15

    Nitrogen doping in ZnO is inhibited by spontaneous formation of compensating defects. Perfect control of the nitrogen doping concentration is required, since a high concentration of nitrogen could induce the formation of donor defects involving nitrogen. In this work, the effect of post-growth annealing in oxygen ambient on ZnO thin films grown by Metalorganic Chemical Vapor Deposition, using NO as both oxidant and nitrogen dopant, is studied. After annealing at 700 C and above, low-temperature photoluminescence shows the appearance of a transition at {proportional_to}3.23 eV which is interpreted as pair emission involving a nitrogen acceptor. A second transition at {proportional_to}3.15 eV is also discussed. This work suggests annealing as a potential means for p-type doping using nitrogen (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  13. Vortex oscillations in TFA-grown YBCO thin-films with BZO nanoparticles

    International Nuclear Information System (INIS)

    An ac susceptibility methodology has been applied to investigate the vortex dynamics of YBa2Cu3O7-x-BaZrO3 nanocomposites grown by the chemical solution deposition TFA route, close to the irreversibility line. By analysing the linear, non-dissipative Campbell regime at low ac fields, we determined the temperature and field dependence of the restoring pinning constant, αL(Hdc, T), characterising the harmonic oscillation of vortices inside their potential wells. Different than standard TFA-YBCO films, BZO nanocomposites displayed increasing αL(Hdc) curves in the whole studied (Hdc, T) phase diagram, a behavior not predicted by the standard collective theory. We suggest results may be explained by the softening of the vortex-lattice, owed to the microstrain induced by the nanoparticles in the YBCO matrix.

  14. TEM characterization of organic nanocrystals grown in sol-gel thin films

    International Nuclear Information System (INIS)

    The tetracene molecule (2,3-benzanthracene, C8H12) was used to synthesize nanocrystals grown in sol-gel thin films, ranging from 10 to 100 nm of diameter. This confined nucleation and growth was compared to microcrystallizations of the same molecule in free solution. Transmission electron microscopy (TEM) was used to characterize these two kinds of tetracene crystals. The observation was performed under low-dose illumination to avoid amorphization of the samples during electron irradiation. Spatial confinement and size distribution of micro- and nanocrystals were compared. Using electron microdiffraction and diffraction patterns simulations, we showed that free microcrystals and nanocrystals confined in gel glasses exhibit the same triclinic P-bar 1 structure. In addition, time-resolved spectroscopy was used to record fluorescence decays, showing a monoexponential fluorescence decay for nanocrystals while microcrystals exhibit a multiexponential decay. The simple signature of nanocrystals luminescence is promising for the future development of chemical or biological sensors

  15. Properties of MgB{sub 2} films grown at various temperatures by hybrid physical-chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Ke; Veldhorst, Menno; Li, Qi; Xi, X X [Department of Physics, Pennsylvania State University, University Park, PA 16802 (United States); Lee, Che-Hui; Lamborn, Daniel R; DeFrain, Raymond; Redwing, Joan M [Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802 (United States)

    2008-09-15

    A hybrid physical-chemical vapour deposition (HPCVD) system consisting of separately controlled Mg-source heater and substrate heater is used to grow MgB{sub 2} thin films and thick films at various temperatures. We are able to grow superconducting MgB{sub 2} thin films at temperatures as low as 350 deg. C with a T{sub c0} of 35.5 K. MgB{sub 2} films up to 4 {mu}m in thickness grown at 550 deg. C have J{sub c} over 10{sup 6} A cm{sup -2} at 5 K and zero applied field. The low deposition temperature of MgB{sub 2} films is desirable for all-MgB{sub 2} tunnel junctions and MgB{sub 2} thick films are important for applications in coated conductors.

  16. Synthesis of nanocrystalline Cu2ZnSnS4 thin films grown by the spray-pyrolysis technique

    International Nuclear Information System (INIS)

    Spray pyrolysis was used to deposit Cu2ZnSnS4 (CZTS) thin films on soda lime glass substrates at 300 °C. Aqueous solutions of copper chloride, zinc chloride, stannous chloride and thiourea were mixed together to form the spray liquid. The sprayed films were annealed under vacuum at 350 °C, 400 °C and 450 °C. Structural and optical characterization was performed on the CZTS films using X-ray diffraction (XRD) and UV-VIS spectrophotometry. XRD results indicate that the films are single phase nanocrystalline CZTS. Optical studies show that the optical gap values are 1.44 eV for the as-grown film and 1.46 eV, 1.48 eV and 1.49 eV for the films annealed at 350 °C, 400 °C and 450 °C, respectively

  17. Synthesis of nanocrystalline Cu2ZnSnS4 thin films grown by the spray-pyrolysis technique

    Science.gov (United States)

    Chandel, Tarun; Singh, Joginder; Rajaram, P.

    2015-08-01

    Spray pyrolysis was used to deposit Cu2ZnSnS4 (CZTS) thin films on soda lime glass substrates at 300 °C. Aqueous solutions of copper chloride, zinc chloride, stannous chloride and thiourea were mixed together to form the spray liquid. The sprayed films were annealed under vacuum at 350 °C, 400 °C and 450 °C. Structural and optical characterization was performed on the CZTS films using X-ray diffraction (XRD) and UV-VIS spectrophotometry. XRD results indicate that the films are single phase nanocrystalline CZTS. Optical studies show that the optical gap values are 1.44 eV for the as-grown film and 1.46 eV, 1.48 eV and 1.49 eV for the films annealed at 350 °C, 400 °C and 450 °C, respectively.

  18. Hydrogen influence on the electrical and optical properties of ZnO thin films grown under different atmospheres

    Energy Technology Data Exchange (ETDEWEB)

    Lorite, I., E-mail: lorite@physik.uni-leipzig; Wasik, J.; Michalsky, T.; Schmidt-Grund, R.; Esquinazi, P.

    2014-04-01

    In this work we studied the changes of the electrical and optical properties after hydrogen plasma treatment of polycrystalline ZnO thin films grown under different atmosphere conditions. The obtained results show that the gas used during the growth process plays an important role in the way hydrogen is incorporated in the films. The hydrogen doping can produce radiative and non-radiative defects that reduce the UV emission in ZnO films grown in oxygen atmosphere but it passivates defects created when the films are grown in nitrogen atmosphere. Impedance spectroscopy measurements show that these effects are related to regions where hydrogen is mostly located, either at the grain cores or boundaries. We discuss how hydrogen strongly influences the initial semiconducting behavior of the ZnO thin films. - Highlights: • Effectiveness of hydrogen treatment depends on the thin film growth conditions. • There is no detection of secondary phases after treatment by IS. • Hydrogen incorporation changes optical and electrical ZnO properties.

  19. Zinc sulfide and terbium-doped zinc sulfide films grown by traveling wave reactor atomic layer epitaxy

    CERN Document Server

    Yun, S J; Nam, K S

    1998-01-01

    Zinc sulfide (ZnS) and terbium-doped ZnS (ZnS:Tb) thin films were grown by traveling wave reactor atomic layer epitaxy (ALE). In the present work, ZnCl sub 2 , H sub 2 S, and tris (2,2,6,6-tetramethyl-3,5-heptandionato) terbium (Tb(tmhd) sub 3) were used as the precursors. The dependence of crystallinity and Cl content of ZnS films was investigated on the growth temperature. ZnS and ZnS:Tb films grown at temperatures ranging from 400 to 500 .deg. C showed a hexagonal-2H crystalline structure. The crystallinity of ZnS film was greatly enhanced as the temperature increased. At growth temperatures higher than 450.deg.C, the films showed preferred orientation with mainly (002) diffraction peak. The Cl content decreased from approximately 9 to 1 at.% with the increase in growth temperature from 400 to 500 .deg. C. The segregation of Cl near the surface region and the incorporation of O from Tb(tmhd) sub 3 during ALE process were also observed using Auger electron spectroscopy. The ALE-grown ZnS and ZnS:Tb films re...

  20. Epitaxially grown polycrystalline silicon thin-film solar cells on solid-phase crystallised seed layers

    Science.gov (United States)

    Li, Wei; Varlamov, Sergey; Xue, Chaowei

    2014-09-01

    This paper presents the fabrication of poly-Si thin film solar cells on glass substrates using seed layer approach. The solid-phase crystallised P-doped seed layer is not only used as the crystalline template for the epitaxial growth but also as the emitter for the solar cell structure. This paper investigates two important factors, surface cleaning and intragrain defects elimination for the seed layer, which can greatly influence the epitaxial grown solar cell performance. Shorter incubation and crystallisation time is observed using a simplified RCA cleaning than the other two wet chemical cleaning methods, indicating a cleaner seed layer surface is achieved. Cross sectional transmission microscope images confirm a crystallographic transferal of information from the simplified RCA cleaned seed layer into the epi-layer. RTA for the SPC seed layer can effectively eliminate the intragrain defects in the seed layer and improve structural quality of both of the seed layer and the epi-layer. Consequently, epitaxial grown poly-Si solar cell on the RTA treated seed layer shows better solar cell efficiency, Voc and Jsc than the one on the seed layer without RTA treatment.

  1. Comparison of stress states in GaN films grown on different substrates: Langasite, sapphire and silicon

    Science.gov (United States)

    Park, Byung-Guon; Saravana Kumar, R.; Moon, Mee-Lim; Kim, Moon-Deock; Kang, Tae-Won; Yang, Woo-Chul; Kim, Song-Gang

    2015-09-01

    We demonstrate the evolution of GaN films on novel langasite (LGS) substrate by plasma-assisted molecular beam epitaxy, and assessed the quality of grown GaN film by comparing the experimental results obtained using LGS, sapphire and silicon (Si) substrates. To study the substrate effect, X-ray diffraction (XRD), scanning electron microscopy (SEM), Raman spectroscopy and photoluminescence (PL) spectra were used to characterize the microstructure and stress states in GaN films. Wet etching of GaN films in KOH solution revealed that the films deposited on GaN/LGS, AlN/sapphire and AlN/Si substrates possess Ga-polarity, while the film deposited on GaN/sapphire possess N-polarity. XRD, Raman and PL analysis demonstrated that a compressive stress exist in the films grown on GaN/LGS, AlN/sapphire, and GaN/sapphire substrates, while a tensile stress appears on AlN/Si substrate. Comparative analysis showed the growth of nearly stress-free GaN films on LGS substrate due to the very small lattice mismatch (~3.2%) and thermal expansion coefficient difference (~7.5%). The results presented here will hopefully provide a new framework for the further development of high performance III-nitride-related devices using GaN/LGS heteroepitaxy.

  2. Field Emission Properties of Ball-Like Nano-Carbon Thin Films Deposited on Mo Films with Accidented Topography

    International Nuclear Information System (INIS)

    Ball-like nano-carhon thin films (BNCTs) are grown on Mo layers by microwave plasma chemical vapour deposition (MPCVD) system. The Mo layers are deposited on ceramic substrates by electron beam deposition method and are pretreated by ultrasonically scratching. The optimization effects of ultrasonically scratching pretreat-ment on the surface micro-structures of carbon films are studied. It is found from field-emission scanning electron microscope (FE-SEM) images and Raman spectra that the surface structures of the carbon films deposited on Mo pretreated are improved, which are composed of highly uniform nano-structured carbon balls with considerable disorder structures. Field emission (FE) measurements are carried out using a diode structure. The experimental results indicate that the BNCTs exhibit good FE properties, which have the turn on field of 1.56 V/μm, and the current density of 1.0mA/cm2 at electric field of 4.0 V/μm, the uniformly distributed emission site density from a broad well-proportioned emission area of 4 cm2 are also obtained. Linearity is observed in Fowler–Nordheim (F–N) plots in higher Geld region, and the possible emission mechanism of BNCTs is discussed. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  3. The local crystallization in nanoscale diamond-like carbon films during annealing

    International Nuclear Information System (INIS)

    The local crystallization during annealing at 600 °C in nanoscale diamond-like carbon coatings films grown by pulsed vacuum-arc deposition method was observed using modern techniques of high-resolution transmission electron microscopy. The crystallites formed by annealing have a face-centred cubic crystal structure and grow in the direction [01¯1¯] as a normal to the film surface. The number and size of the crystallites depend on the initial values of the intrinsic stresses before annealing, which in turn depend on the conditions of film growth. The sizes of crystallites are 10 nm for films with initial compressive stresses of 3 GPa and 17 nm for films with initial compressive stresses of 12 GPa. Areas of local crystallization arising during annealing have a structure different from the graphite. Additionally, the investigation results of the structure of nanoscale diamond-like carbon coatings films using Raman spectroscopy method are presented, which are consistent with the transmission electron microscopy research results

  4. Nematic liquid crystalline alignment on graphitic carbon film surfaces and its electrooptical characteristics

    Science.gov (United States)

    Nakagaki, Takamitsu; Yamada, Kenji; Nakamura, Atsushi; Temmyo, Jiro; Kubono, Atsushi

    2015-09-01

    A graphitic carbon (g-C) film directly grown on a synthetic quartz glass substrate was applied to a liquid crystal (LC) device as an alignment layer combined with a transparent electrode for a demonstration of high performance. The as-grown g-C films showed a nanometer-size domain with 91.6% transmittance at 550 nm and with a sheet resistance of 5.9 kΩ/sq. The nanodomain of the g-C film surface was associated with a random orientation of the twisted nematic LC (4-pentyl-4‧-n-cyanobiphenyl, 5CB) molecules in an in-plane randomly parallel alignment that was analyzed by polarized optical microscopy (POM). We also demonstrated an LC display (LCD) in an in-plane random hybrid twisted nematic (IPR-HTN) configuration using the g-C films compared with a previously proposed configuration using a hydroxypropyl cellulose (HPC) sublayer and a TN configuration using a polyimide film with a rubbing treatment. It was found that the combined g-C alignment layer/electrode provides a low turn-on voltage, a fast response, and a wide viewing angle as an orientation sublayer and an electrode.

  5. Monitoring structural defects and crystallinity of carbon nanotubes in thin films

    Indian Academy of Sciences (India)

    S S Mahajan; M D Bambole; S P Gokhale; A B Gaikwad

    2010-03-01

    We report the influence of catalyst formulation and reaction temperature on the formation of carbon nanotube (CNT) thin films by the chemical vapour deposition (CVD) method. Thin films of CNTs were grown on Fe–Mo/Al2O3-coated silicon wafer by thermal decomposition of methane at different temperatures ranging from 800 to 1000°C. The electron microscopic investigations, SEM as well as HRTEM, of the as-grown CNT thin films revealed the growth of uniform multi-walled CNTs in abundance. The intensity ratio of D-band to G-band and FWHM of G-band through Raman measurements clearly indicated the dependency of structural defects and crystallinity of CNTs in thin films on the catalyst formulation and CVD growth temperature. The results suggest that thin films of multi-walled CNTs with negligible amount of defects in the nanotube structure and very high crystallinity can be obtained by thermal CVD process at 925°C.

  6. Pulsed laser deposition of nano-glassy carbon films

    Energy Technology Data Exchange (ETDEWEB)

    Ossi, P.M. [Dip. Ingegneria Nucleare and Centre of Excellence, NanoEngineered Materials and Surfaces (NEMAS), Politecnico di Milano, via Ponzio, 34-3, 20133 Milan (Italy)]. E-mail: paolo.ossi@polimi.it; Bottani, C.E. [Dip. Ingegneria Nucleare and Centre of Excellence, NanoEngineered Materials and Surfaces (NEMAS), Politecnico di Milano, via Ponzio, 34-3, 20133 Milan (Italy); Miotello, A. [Dip. Fisica, Universita di Trento, 38050 Povo (TN) (Italy)

    2005-07-30

    Carbon films have been deposited at room temperature on (1 0 0) Si substrates by pulsed laser ablation (PLA) from a highly oriented pyrolitic graphite source. Changing the laser power density from 8.5 to 19 MW mm{sup -2} and using various ambient atmospheres (helium, argon from 0.6 Pa to 2 kPa), nano-sized cluster-assembled films were obtained. Scanning electron microscopy shows that the film morphology, changes with increasing ambient gas pressure. We observed in the sequence: dense columns, node-like morphology, platelets (only in argon) and an open dendritic structure. By atomic force microscopy, on representative films, we evaluated the size distribution and relative abundancy of aggregates of carbon clusters, as well as film roughness. Raman spectroscopy shows that all the films are sp{sup 2} coordinated, structurally disordered and belong to the family of carbon nano-glasses. The estimated film coherence length gives an average size of about 5 nm for the agglomerated carbon clusters in the films. The average number of carbon atoms per cluster depends on ambient gas pressure, but is nearly independent of laser intensity.

  7. Reinforcement of CVD grown multi-walled carbon nanotubes by high temperature annealing

    Directory of Open Access Journals (Sweden)

    K. V. Elumeeva

    2013-11-01

    Full Text Available We report on the increase of the Young's modulus (E of chemical vapor deposition (CVD grown multi-walled carbon nanotubes (MWNTs upon high temperature heat treatment. The post heat-treatment at 2200–2800ºC in a controlled atmosphere results in a considerable improvement of the microstructure, chemical stability and electro-physical properties of the nanotubes. The Young's modulus of MWNTs of different diameters was measured by the deflection of a single tube suspended across the hole of silicon nitride membrane and loaded by an atomic force microscope tip. Contrary to previous reports, a strong increase of E was feasible due to the improved growth conditions of pristine carbon nanotubes and to the improved heat treatment conditions. However, the elastic modulus of CVD grown MWNTs still shows strong diameter dependence resulting from the remaining structural inhomogeneities in large diameter nanotubes.

  8. Evidence of wettability variation on carbon nanofiber layers grown on oxidized silicon substrates

    NARCIS (Netherlands)

    Nair, H.; Tiggelaar, R.M.; Thakur, D.B.; Gardeniers, J.G.E.; Houselt, van A.; Lefferts, L.

    2013-01-01

    This paper describes how layers of carbon nanofibers (CNFs) with a controllable wettability can be synthesized by means of thermal catalytic chemical vapor deposition on nickel-based thin films on oxidized silicon supports. In order to achieve well-adhesive CNF-layers with a uniform surface coverage

  9. Effect of growth temperature on defects in epitaxial GaN film grown by plasma assisted molecular beam epitaxy

    Directory of Open Access Journals (Sweden)

    S. S. Kushvaha

    2014-02-01

    Full Text Available We report the effect of growth temperature on defect states of GaN epitaxial layers grown on 3.5 μm thick GaN epi-layer on sapphire (0001 substrates using plasma assisted molecular beam epitaxy. The GaN samples grown at three different substrate temperatures at 730, 740 and 750 °C were characterized using atomic force microscopy and photoluminescence spectroscopy. The atomic force microscopy images of these samples show the presence of small surface and large hexagonal pits on the GaN film surfaces. The surface defect density of high temperature grown sample is smaller (4.0 × 108 cm−2 at 750 °C than that of the low temperature grown sample (1.1 × 109 cm−2 at 730 °C. A correlation between growth temperature and concentration of deep centre defect states from photoluminescence spectra is also presented. The GaN film grown at 750 °C exhibits the lowest defect concentration which confirms that the growth temperature strongly influences the surface morphology and affects the optical properties of the GaN epitaxial films.

  10. Voigt effect measurement on PLD grown NiO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Scarlat, Camelia; Mok, Kah Ming; Zhou, Shengqiang; Vinnichenko, Mykola; Helm, Manfred; Schmidt, Heidemarie [Institute for Ion Beam Physics and Materials Research, Forschungszentrum Dresden-Rossendorf, Bautzner Landstrasse 400, 01328 Dresden (Germany); Lorenz, Michael; Grundmann, Marius [Institut fuer Experimentelle Physik II, Fakultaet fuer Physik und Geowissenschaften, 04103 Leipzig (Germany); Schubert, Mathias [Department of Electrical Engineering, University of Nebraska-Lincoln, 68588-0511, Nebraska (United States)

    2010-02-15

    NiO has great potential applications in spin valves, magnetooptical sensors, optical fibers, solar thermal absorbers, and in nonvolatile resistive random access memory devices. In our study NiMnO and NiMnLiO films have been grown on double-side polished r-plane sapphire substrates by pulsed laser deposition (PLD). We measured the complex Voigt angle using the polarized light from a HeCd laser, a Glan Taylor polarizer, a Hinds PEM-100[1] and two Lock-Ins. The Voigt effect is a second order magnetooptic effect[2]. The polarization state of light after transmission through a sample consisting of ca. 1 {mu}m thick, weak ferromagnetic NiO thin on purely diamagnetic r-plane sapphire substrates has been modelled using the 4 x 4 matrix formalism[3] in dependence of an external magnetic field applied in-plane, i.e. in Voigt configuration. The modelling results revealed that for the diamagnetic sapphire substrate the Voigt angle depends parabolically on the external magnetic field and that the weak ferromagnetic NiO thin films change the parabolic dependence of the Voigt angle in the range of {+-}0.1 T to a flat-top shape in agreement with the experimentally determined Voigt angle (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  11. Low-temperature, vapor-liquid-solid, laterally grown silicon films using alloyed catalysts

    Science.gov (United States)

    LeBoeuf, Jerome L.; Brodusch, Nicolas; Gauvin, Raynald; Quitoriano, Nathaniel J.

    2014-12-01

    Using amorphous oxide templates known as micro-crucibles which confine a vapor-liquid-solid catalyst to a specific geometry, two-dimensional silicon thin-films of a single orientation have been grown laterally over an amorphous substrate and defects within crystals have been necked out. The vapor-liquid-solid catalysts consisted nominally of 99% gold with 1% titanium, chromium, or aluminum, and each alloy affected the processing of micro-crucibles and growth within them significantly. It was found that chromium additions inhibited the catalytic effect of the gold catalysts, titanium changed the morphology of the catalyst during processing and aluminum stabilized a potential third phase in the gold-silicon system upon cooling. Two mechanisms for growing undesired nanowires were identified both of which hindered the VLS film growth, fast silane cracking rates and poor gold etching, which left gold nanoparticles near the gold-vapor interface. To reduce the silane cracking rates, growth was done at a lower temperature while an engineered heat and deposition profile helped to reduce NWs caused by the second mechanism. Through experimenting with catalyst compositions, the fundamental mechanisms which produce concentration gradients across the gold-silicon alloy within a given micro-crucible have been proposed. Using the postulated mechanisms, micro-crucibles were designed which promote high-quality, single crystal growth of semiconductors.

  12. Optical and structural properties of CdS films grown by CSVT technique

    International Nuclear Information System (INIS)

    CdS films were grown on glass substrates by the close spaced vapor transport technique (CSVT). We deposited two series of samples: a) with a substrate temperature of 150 C (group A) and b) with a variation of substrate temperature between 200 C and 550 C, at intervals of 50 C (group B). The samples of group A were annealed in N2 atmosphere, from 200 C to 400 C, at intervals of 50 C. All samples were measured by X-ray diffraction and optical transmission. X-ray diffraction patterns show that the films had a mixture of cubic and hexagonal structure remained unchanged after the thermal annealing, the main phase present was cubic. The energy band gap shows a thermal stability. The substrate temperature has no effect over the crystal structure and band gap energy. Transmittance and X-ray measurements show a thermal stability of the crystal structure and band gap energy. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  13. Effect of residual stress on the microstructure of GaN epitaxial films grown by pulsed laser deposition

    Science.gov (United States)

    Wang, Haiyan; Wang, Wenliang; Yang, Weijia; Zhu, Yunnong; Lin, Zhiting; Li, Guoqiang

    2016-04-01

    The stress-free GaN epitaxial films have been directly grown by pulsed laser deposition (PLD) at 850 °C, and the effect of different stress on the microstructure of as-grown GaN epitaxial films has been explored in detail. The as-grown stress-free GaN epitaxial films exhibit very smooth surface without any particles and grains, which is confirmed by the smallest surface root-mean-square roughness of 2.3 nm measured by atomic force microscopy. In addition, they also have relatively high crystalline quality, which is proved by the small full-width at half maximum values of GaN(0002) and GaN (10 1 bar 2) X-ray rocking curves as 0.27° and 0.68°, respectively. However, when the growth temperature is lower or higher than 850 °C, internal or thermal stress would be increased in as-grown GaN epitaxial films. To release the larger stress, a great number of dislocations are generated. Many irregular particulates, hexagonal GaN gains and pits are therefore produced on the films surface, and the crystalline quality is greatly reduced consequently. This work has demonstrated the direct growth of stress-free GaN epitaxial films with excellent surface morphology and high crystalline quality by PLD, and presented a comprehensive study on the origins and the effect of stress in GaN layer. It is instructional to achieve high-quality nitride films by PLD, and shows great potential and broad prospect for the further development of high-performance GaN-based devices.

  14. Tribology of diamond-like carbon films fundamentals and applications

    CERN Document Server

    Donnet, Christophe

    2007-01-01

    Despite being in the spotlight for a very long time; there is no such book that is dedicated to the Tribology and applications of DLC films. Both scientifically and industrially, interest in these films has grown rapidly in recent years and this trend is expected to grow even further with increasing industrial applications. This book contains some of the most relevant and fundamental information on the Tribology and applications of DLC films. It also provides reliable and up-to-date information on different DLC coatings and their tribological properties which are available for use in various i

  15. Low-temperature transport in ultra-thin tungsten films grown by focused-ion-beam deposition

    OpenAIRE

    Chiatti, O.; Warburton, P. A.

    2010-01-01

    We have fabricated tungsten-containing films by focused-ion-beam (FIB)-induced chemical vapour deposition. By using ion-beam doses below 50 pC/μm² on a substrate of amorphous silicon, we have grown continuous films with thickness below 20 nm. The low-temperature electron transport properties were investigated by measuring current-voltage characteristics for temperatures down to 400 mK and in magnetic fields up to 8 T. FIB-deposited tungsten films are known to have an enhanced transition tem­p...

  16. Superconducting properties of very high quality NbN thin films grown by high temperature chemical vapor deposition

    OpenAIRE

    Hazra, D.; Tsavdaris, N.; Jebari, S.; Grimm, A.; Blanchet, F.; Mercier, F.; Blanquet, E.; Chapelier, C.; Hofheinz, M.

    2016-01-01

    Niobium nitride (NbN) is widely used in high-frequency superconducting electronics circuits because it has one of the highest superconducting transition temperatures ($T_c$ $\\sim$ 16.5 K) and largest gap among conventional superconductors. In its thin-film form, the $T_c$ of NbN is very sensitive to growth conditions and it still remains a challenge to grow NbN thin film (below 50 nm) with high $T_c$. Here, we report on the superconducting properties of NbN thin films grown by high-temperatur...

  17. Effects of oxygen pressure on La_3Ga_5SiO_(14) thin films grown by pulsed laser deposition

    Institute of Scientific and Technical Information of China (English)

    张雯; 王继扬; 季振国; 李红霞; 娄垚; 姚淑华

    2010-01-01

    La3Ga5SiO14 thin films were grown on Si(100) substrates by pulsed laser deposition at several oxygen pressures(5,10,and 20 Pa).The effects of oxygen pressure on the structural and morphological characteristics of the films were investigated using X-ray diffraction,atomic force microscopy,and scanning electron microscopy.X-ray diffraction results showed the intensity of lines from crystallites oriented along the(300) and(220) planes increased as the oxygen pressure was increased to 20 Pa.The deposited films ...

  18. Laser MBE-grown yttrium iron garnet films on GaN: characterization of the crystal structure and magnetic properties

    Science.gov (United States)

    Kaveev, A. K.; Bursian, V. E.; Gastev, S. V.; Krichevtsov, B. B.; Suturin, S. M.; Volkov, M. P.; Sokolov, N. S.

    2016-07-01

    Yttrium iron garnet (YIG) films were grown on GaN substrates using the laser molecular beam epitaxy method. X-ray diffraction data showed polycrystalline YIG layers without additional structural modifications. The magnetic properties of the YIG films were studied at room temperature with the aid of a vibration sample magnetometer, the magneto-optical Kerr effect and ferromagnetic resonance methods. ‘Easy-plane’-type magnetic anisotropy was found in the films. The gyromagnetic ratio and 4 πMS value were calculated.

  19. Electron backscatter diffraction analysis applied to [0 0 1] magnetite thin films grown on MgO substrates

    Science.gov (United States)

    Koblischka-Veneva, A.; Koblischka, M. R.; Zhou, Y.; Murphy, S.; Mücklich, F.; Hartmann, U.; Shvets, I. V.

    2007-09-01

    Electron backscatter diffraction (EBSD) analysis is applied to [0 0 1] oriented magnetite thin films grown on MgO substrates. A high image quality of the Kikuchi patterns was achieved enabling multi-phase scans. Several types of magnetite thin films were analyzed; one as-grown and the others after different annealing steps in oxygen atmosphere. From the EBSD mappings, we learn that the optimum orientation in [0 0 1]-direction is not yet achieved for the as-grown sample, but develops upon oxygen treatment. Furthermore, the distribution of misorientation angles within the investigated area (=1 grain) is found to change during the annealing steps. After 3 min of annealing, most of the misorientations around 30°-40° have vanished, and some islands with high misorientation angles remain, which may play a role as antiferromagnetic pinning centers.

  20. Injection Molding of Polystyrene Matrix Composites Filled with Vapor Grown Carbon Fiber

    Science.gov (United States)

    Enomoto, Kazuki; Yasuhara, Toshiyuki; Ohtake, Naoto; Kato, Kazunori

    Vapor grown carbon fiber (VGCF) is a kind of carbon nanotube (CNT), which has outstanding properties such as high mechanical strength and high electrical conductivity. In this study, injection molding properties of polystyrene (PS) filled with VGCF and evaluation of mechanical and electrical properties are discussed in comparison with composites in which conventional carbon fillers were filled. As a result, volume resistivity of VGCF/PS composites dropped significantly between VGCF concentration of 3 and 4vol.%. Resistivity of the composites filled with VGCF was 1.2×102Ω·cm when VGCF concentration was 11.6vol.%. The resistivity was significantly lower than that of composites which were filled with conventional carbon fillers. The elastic modulus slightly increases with increasing VGCF concentration, whereas the tensile strength slightly decreases in the VGCF concentration in the range from 0 to 12vol.%.

  1. Optical properties of aluminum nitride thin films grown by direct-current magnetron sputtering close to epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Stolz, A. [Institut d' Electronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, PRES Lille, Université Nord de France, Avenue Poincaré, 59652 Villeneuve d' Ascq Cedex (France); Soltani, A., E-mail: ali.soltani@iemn.univ-lille1.fr [Institut d' Electronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, PRES Lille, Université Nord de France, Avenue Poincaré, 59652 Villeneuve d' Ascq Cedex (France); Abdallah, B. [Department of Materials Physics, Atomic Energy Commission of Syria, Damascus, P.O. Box 6091 (Syrian Arab Republic); Charrier, J. [Fonctions Optiques pour les Technologies de l' informatiON (FOTON), UMR CNRS 6082, 6, rue de Kerampont CS 80518, 22305 Lannion Cedex (France); Deresmes, D. [Institut d' Electronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, PRES Lille, Université Nord de France, Avenue Poincaré, 59652 Villeneuve d' Ascq Cedex (France); Jouan, P.-Y.; Djouadi, M.A. [Institut des Matériaux Jean Rouxel – IMN, UMR CNRS 6502, 2, rue de la Houssinère BP 32229, 44322 Nantes (France); Dogheche, E.; De Jaeger, J.-C. [Institut d' Electronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, PRES Lille, Université Nord de France, Avenue Poincaré, 59652 Villeneuve d' Ascq Cedex (France)

    2013-05-01

    Low-temperature Aluminum Nitride (AlN) thin films with a thickness of 3 μm were deposited by Direct-Current magnetron sputtering on sapphire substrate. They present optical properties similar to those of epitaxially grown films. Different characterization methods such as X-Ray Diffraction, Transmission Electron Microscopy and Atomic Force Microscopy were used to determine the structural properties of the films such as its roughness and crystallinity. Newton interferometer was used for stress measurement of the films. Non-destructive prism-coupling technique was used to determine refractive index and thickness homogeneity by a mapping on the whole sample area. Results show that AlN films grown on AlGaN layer have a high crystallinity close to epitaxial films, associated to a low intrinsic stress for low thickness. These results highlight that it is possible to grow thick sample with microstructure and optical properties close to epitaxy, even on a large surface. - Highlights: ► Aluminum Nitride sputtering technique with a low temperature growth process ► Epitaxial quality of two microns sputtered Aluminum Nitride film ► Optics as a non-destructive accurate tool for acoustic wave investigation.

  2. Epitaxial ZnO films grown on ZnO-buffered c-plane sapphire substrates by hydrothermal method

    International Nuclear Information System (INIS)

    ZnO films are hydrothermally grown on ZnO-buffered c-plane sapphire substrates at a low temperature of 70 deg. C. A radio-frequency (RF) reactive magnetron sputtering has been used to grow the ZnO buffer layers. X-ray diffraction, scanning electron microscopy, and room temperature photoluminescence are carried out to characterize the structure, morphology and optical property of the films. It is found that the films are stress-free. The epitaxial relationship between the ZnO film and the c-plane sapphire substrate is found to be ZnO (0 0 0 1)||Al2O3 (0 0 0 1) in the surface normal and ZnO[101-bar 0]||Al2O3[112-bar 0] in plane. Sapphire treatment, as such acid etching, nitridation, and oxidation are found to influence the nucleation of the film growth, and the buffer layers determine the crystalline quality of the ZnO films. The maximum PL quantum efficiency of ZnO films grown with hydrothermal method is found to be about 80% of single-crystal ZnO.

  3. Piezoresistive Effect of Doped carbon Nanotube/Cellulose Films

    Institute of Scientific and Technical Information of China (English)

    王万录; 廖克俊; 李勇; 王永田

    2003-01-01

    The strain-induced resistance changes in iodine-doped and undoped carbon nanotube films were investigated by a three-point bending test. Carbon nanotubes were fabricated by hot filament chemical vapour deposition. The experimental results showed that there has a striking piezoresistive effect in carbon nanotube films. The gauge factor for I-doped and undoped carbon nanotube films under 500 microstrain was about 125 and 65 respectively at room temperature, exceeding that of polycrystalline silicon (30) at 35℃. The origin of the piezoresistivity in the films may be ascribed to a strain-induced change in the band gap for the doped tubes and to the intertube contact resistance for the undoped tubes.

  4. Photoluminescence and Raman Spectroscopy Studies of Carbon Nitride Films

    OpenAIRE

    Hernández-Torres, J.; Gutierrez-Franco, A.; P. G. González; L. García-González; Hernandez-Quiroz, T.; Zamora-Peredo, L.; V.H. Méndez-García; A. Cisneros-de la Rosa

    2016-01-01

    Amorphous carbon nitride films with N/C ratios ranging from 2.24 to 3.26 were deposited by reactive sputtering at room temperature on corning glass, silicon, and quartz as substrates. The average chemical composition of the films was obtained from the semiquantitative energy dispersive spectroscopy analysis. Photoluminescence measurements were performed to determine the optical band gap of the films. The photoluminescence spectra displayed two peaks: one associated with the substrate and the ...

  5. N-doped ZnO films grown from hybrid target by the pulsed laser deposition technique

    Science.gov (United States)

    Martín-Tovar, E. A.; Chan y Díaz, E.; Acosta, M.; Castro-Rodríguez, R.; Iribarren, A.

    2016-10-01

    ZnO thin films were grown by the pulsed laser deposition technique on glass substrate using a hybrid target composed of ZnO powder embedded into a poly(ethyl cyanoacrylate) matrix. The resulting thin film presented ZnO wurtzite structure with very low stress and diffractogram very similar to that of the powder pattern. From comparing with ZnO thin films grown from traditional sintered target, it is suggested that the use of this hybrid target with a soft matrix led to ejection of ZnO clusters that conveniently disposed and adhered to substrate and previous deposited layers. Chemical measurements showed the presence of Zn-N bonds, besides Zn-O ones. Optical absorption profile confirmed the presence of low-polymerized zinc oxynitride molecular subunits, besides ZnO.

  6. Topological insulator Bi2Se3 thin films grown on double-layer graphene by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Atomically flat thin films of topological insulator Bi2Se3 have been grown on double-layer graphene formed on 6H-SiC(0001) substrate by molecular beam epitaxy. By a combined study of reflection high energy electron diffraction and scanning tunneling microscopy, we identified the Se-rich condition and temperature criterion for layer-by-layer growth of epitaxial Bi2Se3 films. The as-grown films without doping exhibit a low defect density of 1.0±0.2x1011/cm2, and become a bulk insulator at a thickness of ten quintuple layers, as revealed by in situ angle resolved photoemission spectroscopy measurement.

  7. X-ray Investigation of Ferromagnetic MnAs Thin Films Grown on GaAs(001) by MBE

    Science.gov (United States)

    Huang, S.; Ming, Z. H.; Soo, Y. L.; Kao, Y. H.; Tanaka, M.; Munekata, H.

    1996-03-01

    Quantitative characterization of the microstructures in epitaxial layers grown by MBE is essential for understanding the dynamical processes of epitaxy and surface morphology. In the present study, various x-ray techniques including grazing incidence x-ray scattering (GIXS), x-ray diffraction (XRD), and extended x-ray absorption fine structure (EXAFS) have been employed to investigate the microstructures of two MnAs thin films grown on GaAs(001) by using two different growth templates. The film structures are compared in terms of the interfacial roughness, lattice constants, epilayer thickness, local environment surrounding the Mn atoms, coordination number, and local disorder. These results provide quantitative evidence for the effects of template on the local structure and crystallinity of the MnAs films which can be correlated with the observed difference in their physical properties such as the easy magnetization direction, etc.. * Research is supported in part by DOE.

  8. Intrinsic graphene field effect transistor on amorphous carbon films

    OpenAIRE

    Tinchev, Savcho

    2013-01-01

    Fabrication of graphene field effect transistor is described which uses an intrinsic graphene on the surface of as deposited hydrogenated amorphous carbon films. Ambipolar characteristic has been demonstrated typical for graphene devices, which changes to unipolar characteristic if the surface graphene was etched in oxygen plasma. Because amorphous carbon films can be growth easily, with unlimited dimensions and no transfer of graphene is necessary, this can open new perspective for graphene ...

  9. Stretchable transistors with buckled carbon nanotube films as conducting channels

    Science.gov (United States)

    Arnold, Michael S; Xu, Feng

    2015-03-24

    Thin-film transistors comprising buckled films comprising carbon nanotubes as the conductive channel are provided. Also provided are methods of fabricating the transistors. The transistors, which are highly stretchable and bendable, exhibit stable performance even when operated under high tensile strains.

  10. Development of uniformly grown ZnO NPs films using single precursor solution by pulsed spray pyrolysis technique

    Energy Technology Data Exchange (ETDEWEB)

    Babu, M. Sekhar [Indian Institute of Science, Department of Inorganic and Physical Chemistry (India); Prashantha, M. [Indian Institute of Science, Department of Physics (India); Reddy, N. Koteeswara, E-mail: dr_nkreddy@rediffmail.com [Center for Nanoscience and Engineering, Indian Institute of Science (India); Ramesh, K. [Indian Institute of Science, Department of Physics (India)

    2013-03-15

    In this article, we have reported the controlled synthesis of uniformly grown zinc oxide nanoparticles (ZnO NPs) films by a simple, low-cost, and scalable pulsed spray pyrolysis technique. From the surface analysis it is noticed that the as-deposited films have uniformly dispersed NPs-like morphology. The structural studies reveal that these NPs films have highly crystalline hexagonal crystal structure, which are preferentially orientated along the (001) planes. The size of the NPs varied between 5 and 100 nm, and exhibited good stoichiometric chemical composition. Raman spectroscopic analysis reveals that these ZnO NPs films have pure single phase and hexagonal crystal structure. These unique nanostructured films exhibited a low electrical resistivity (5 {Omega}cm) and high light transmittance (90 %) in visible region.

  11. Nanomechanical properties of SiC films grown from C{sub 60} precursors using atomic force microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Morse, K. [Colorado School of Mines, Golden, CO (United States); Balooch, M.; Hamza, A.V.; Belak, J. [Lawrence Livermore National Lab., CA (United States)

    1994-12-01

    The mechanical properties of SiC films grown via C{sub 60} precursors were determined using atomic force microscopy (AFM). Conventional silicon nitride and modified diamond cantilever AFM tips were employed to determine the film hardness, friction coefficient, and elastic modulus. The hardness is found to be between 26 and 40 GPa by nanoindentation of the film with the diamond tip. The friction coefficient for the silicon nitride tip on the SiC film is about one third that for silicon nitride sliding on a silicon substrate. By combining nanoindentation and AFM measurements an elastic modulus of {approximately}300 GPa is estimated for these SiC films. In order to better understand the atomic scale mechanisms that determine the hardness and friction of SiC, we simulated the molecular dynamics of a diamond indenting a crystalline SiC substrate.

  12. Structural properties of SrO thin films grown by molecular beam epitaxy on LaAlO3 substrates

    Science.gov (United States)

    Maksimov, O.; Heydemann, V. D.; Fisher, P.; Skowronski, M.; Salvador, P. A.

    2006-12-01

    SrO films were grown on LaAlO3 substrates by molecular beam epitaxy and characterized using reflection high-energy electron diffraction (RHEED) and x-ray diffraction (XRD). The evolution of the RHEED pattern is discussed as a function of film thickness. 500Å thick SrO films were relaxed and exhibited RHEED patterns indicative of an atomically smooth surface having uniform terrace heights. Films had the epitaxial relationship (001)SrO‖(001)LaAlO3; [010]SrO‖[110]LaAlO3. This 45° in-plane rotation minimizes mismatch and leads to films of high crystalline quality, as verified by Kikuchi lines in the RHEED patterns and narrow rocking curves of the (002) XRD peak.

  13. Ferroelectric properties and dielectric responses of multiferroic BiFeO{sub 3} films grown by RF magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Qi Xiaoding; Tsai, P-C; Chen, I-G [Department of Materials Science and Engineering, National Cheng Kung University, Taiwan (China); Chen, Y-C; Ko, C-H; Huang, J-C-A [Department of Physics, National Cheng Kung University, Taiwan (China)], E-mail: xqi045@mail.ncku.edu.tw

    2008-12-07

    Multiferroic BiFeO{sub 3} films have been grown on LaNiO{sub 3-x}/SrTiO{sub 3} and Pt/Si substrates by RF magnetron sputtering. The films showed fully saturated ferroelectric hysteresis loops with large remanent polarization of 64 {mu}C cm{sup -2}, suitable for most device applications. Piezoresponse force microscopy confirmed that the films were electrically writable. In addition to the high-frequency intrinsic dielectric loss of epitaxial films, the Argand diagram also revealed low-frequency contributions from both dc conductivity and interfacial polarization at electrodes. For polycrystalline films on Pt/Si, the dominant contribution to dielectric loss was space charge polarization at grain boundaries. (fast track communication)

  14. Graphene diamond-like carbon films heterostructure

    Science.gov (United States)

    Zhao, Fang; Afandi, Abdulkareem; Jackman, Richard B.

    2015-03-01

    A limitation to the potential use of graphene as an electronic material is the lack of control over the 2D materials properties once it is deposited on a supporting substrate. Here, the use of Diamond-like Carbon (DLC) interlayers between the substrate and the graphene is shown to offer the prospect of overcoming this problem. The DLC films used here, more properly known as a-C:H with ˜25% hydrogen content, have been terminated with N or F moieties prior to graphene deposition. It is found that nitrogen terminations lead to an optical band gap shrinkage in the DLC, whilst fluorine groups reduce the DLC's surface energy. CVD monolayer graphene subsequently transferred to DLC, N terminated DLC, and F terminated DLC has then been studied with AFM, Raman and XPS analysis, and correlated with Hall effect measurements that give an insight into the heterostructures electrical properties. The results show that different terminations strongly affect the electronic properties of the graphene heterostructures. G-F-DLC samples were p-type and displayed considerably higher mobility than the other heterostructures, whilst G-N-DLC samples supported higher carrier densities, being almost metallic in character. Since it would be possible to locally pattern the distribution of these differing surface terminations, this work offers the prospect for 2D lateral control of the electronic properties of graphene layers for device applications.

  15. Graphene diamond-like carbon films heterostructure

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Fang; Afandi, Abdulkareem; Jackman, Richard B., E-mail: r.jackman@ucl.ac.uk [London Centre for Nanotechnology, Electronic and Electrical Engineering Department, University College London, 17-19 Gordon Street, London WC1H 0AH (United Kingdom)

    2015-03-09

    A limitation to the potential use of graphene as an electronic material is the lack of control over the 2D materials properties once it is deposited on a supporting substrate. Here, the use of Diamond-like Carbon (DLC) interlayers between the substrate and the graphene is shown to offer the prospect of overcoming this problem. The DLC films used here, more properly known as a-C:H with ∼25% hydrogen content, have been terminated with N or F moieties prior to graphene deposition. It is found that nitrogen terminations lead to an optical band gap shrinkage in the DLC, whilst fluorine groups reduce the DLC's surface energy. CVD monolayer graphene subsequently transferred to DLC, N terminated DLC, and F terminated DLC has then been studied with AFM, Raman and XPS analysis, and correlated with Hall effect measurements that give an insight into the heterostructures electrical properties. The results show that different terminations strongly affect the electronic properties of the graphene heterostructures. G-F-DLC samples were p-type and displayed considerably higher mobility than the other heterostructures, whilst G-N-DLC samples supported higher carrier densities, being almost metallic in character. Since it would be possible to locally pattern the distribution of these differing surface terminations, this work offers the prospect for 2D lateral control of the electronic properties of graphene layers for device applications.

  16. Graphene diamond-like carbon films heterostructure

    International Nuclear Information System (INIS)

    A limitation to the potential use of graphene as an electronic material is the lack of control over the 2D materials properties once it is deposited on a supporting substrate. Here, the use of Diamond-like Carbon (DLC) interlayers between the substrate and the graphene is shown to offer the prospect of overcoming this problem. The DLC films used here, more properly known as a-C:H with ∼25% hydrogen content, have been terminated with N or F moieties prior to graphene deposition. It is found that nitrogen terminations lead to an optical band gap shrinkage in the DLC, whilst fluorine groups reduce the DLC's surface energy. CVD monolayer graphene subsequently transferred to DLC, N terminated DLC, and F terminated DLC has then been studied with AFM, Raman and XPS analysis, and correlated with Hall effect measurements that give an insight into the heterostructures electrical properties. The results show that different terminations strongly affect the electronic properties of the graphene heterostructures. G-F-DLC samples were p-type and displayed considerably higher mobility than the other heterostructures, whilst G-N-DLC samples supported higher carrier densities, being almost metallic in character. Since it would be possible to locally pattern the distribution of these differing surface terminations, this work offers the prospect for 2D lateral control of the electronic properties of graphene layers for device applications

  17. Wetting behaviour of carbon nitride nanostructures grown by plasma enhanced chemical vapour deposition technique

    International Nuclear Information System (INIS)

    Highlights: • Carbon nitride films were prepared by using radio frequency plasma enhanced chemical vapour deposition system by altering the electrode distance. • The effect of electrode distance on surface morphology, surface roughness, chemical bonding and hydrophobic behaviour has been studied. • Hydrophobic behaviour were studied by measuring contact angle and calculating surface energy. • CNx nanostructures show super-hydrophobic behaviour. • We report a tunable transition of hydrophilic to super-hydrophobic behaviour of film as electrode distance is reduced. - Abstract: Tuning the wettability of various coating materials by simply controlling the deposition parameters is essential for various specific applications. In this work, carbon nitride (CNx) films were deposited on silicon (1 1 1) substrates using radio-frequency plasma enhanced chemical vapour deposition employing parallel plate electrode configuration. Effects of varying the electrode distance (DE) on the films’ structure and bonding properties were investigated using Field emission scanning electron microscopy, Atomic force microscopy, Fourier transform infrared and X-ray photoemission spectroscopy. The wettability of the films was analyzed using water contact angle measurements. At high DE, the CNx films’ surface was smooth and uniform. This changed into fibrous nanostructures when DE was decreased. Surface roughness of the films increased with this morphological transformation. Nitrogen incorporation increased with decrease in DE which manifested the increase in both relative intensities of C=N to C=C and N−H to O−H bonds. sp2-C to sp3-C ratio increased as DE decreased due to greater deformation of sp2 bonded carbon at lower DE. The films’ characteristics changed from hydrophilic to super-hydrophobic with the decrease in DE. Roughness ratio, surface porosity and surface energy calculated from contact angle measurements were strongly dependent on the morphology, surface

  18. Thermal conductivity of low temperature grown vertical carbon nanotube bundles measured using the three-ω method

    NARCIS (Netherlands)

    Vollebregt, S.; Banerjee, S.; Beenakker, K.; Ishihara, R.

    2013-01-01

    The thermal conductivity of as-grown vertical multi-walled carbon nanotubes (CNT) bundles fabricated at low temperature (500 °C) was measured using a vertical 3ω-method. For this, CNT were selectively grown inside an oxide opening and sandwiched between two metal electrodes. The validity of the meth

  19. Formation of Ultrananocrystalline Diamond/Amorphous Carbon Composite Films in Vacuum Using Coaxial Arc Plasma Gun

    Science.gov (United States)

    Hanada, Kenji; Yoshida, Tomohiro; Nakagawa, You; Yoshitake, Tsuyoshi

    2010-12-01

    Ultrananocrystalline diamond (UNCD)/nonhydrogenated amorphous carbon (a-C) composite films were grown in vacuum using a coaxial arc plasma gun. From the X-ray diffraction measurement, the UNCD crystallite size was estimated to be 1.6 nm. This size is dramatically reduced from that (2.3 nm) of UNCD/hydrogenated amorphous carbon (a-C:H) composite films grown in a hydrogen atmosphere. The sp3/(sp3 + sp2) value, which was estimated from the X-ray photoemission spectrum, was also reduced to be 41%. A reason for it might be the reduction in the UNCD crystallite size. From the near-edge X-ray absorption fine-structure (NEXAFS) spectrum, it was found that the π*C=C and π*C≡C bonds are preferentially formed instead of the σ*C-H bonds in the UNCD/a-C:H films. Since the extremely small UNCD crystallites (1.6 nm) correspond to the nuclei of diamond, we consider that UNCD crystallite formation should be due predominantly to nucleation. The supersaturated condition required for nucleation is expected to be realized in the deposition using the coaxial arc plasma gun.

  20. Growth processes and surface properties of diamondlike carbon films

    International Nuclear Information System (INIS)

    In this study, we compare the deposition processes and surface properties of tetrahedral amorphous carbon (ta-C) films from filtered pulsed cathodic arc discharge (PCAD) and hydrogenated amorphous carbon (a-C:H) films from electron cyclotron resonance (ECR)-plasma source ion implantation. The ion energy distributions (IEDs) of filtered-PCAD at various filter inductances and Ar gas pressures were measured using an ion energy analyzer. The IEDs of the carbon species in the absence of background gas and at low gas pressures are well fitted by shifted Maxwellian distributions. Film hardness and surface properties show a clear dependence on the IEDs. ta-C films with surface roughness at an atomic level and thin (0.3-0.9 nm) graphitelike layers at the film surfaces were deposited at various filter inductances in the highly ionized plasmas with the full width at half maximum ion energy distributions of 9-16 eV. The a-C:H films deposited at higher H/C ratios of reactive gases were covered with hydrogen and sp3 bonded carbon-enriched layers due to the simultaneous interaction of hydrocarbon species and atomic hydrogen. The effects of deposited species and ion energies on film surface properties were analyzed. Some carbon species have insufficient energies to break the delocalized π(nC) bonds at the graphitelike film surface, and they can govern film formation via surface diffusion and coalescence of nuclei. Dangling bonds created by atomic hydrogen lead to uniform chemisorption of hydrocarbon species from the ECR plasmas. The deposition processes of ta-C and a-C:H films are discussed on the basis of the experimental results

  1. Fabrication and electron field-emission of carbon nanofibers grown on silicon nanoporous pillar array

    International Nuclear Information System (INIS)

    Highlights: ► Carbon nanofibers were grown on silicon nanoporous pillar array by a CVD method.► Low turn-on field, high density and stable FE current were obtained in CNTs/Si-NPA.► Defects in CNTs and Si array substrate contributes the excellent FE property. - Abstract: Random orientation carbon nanofibers (CNFs) were grown on silicon nanoporous pillar array (Si-NPA) by thermal chemical vapor deposition (CVD) method with acetylene (C2H2) as carbon precursor and Ni as the catalyst. The synthesized CNFs were mainly composed of amorphous carbon and disordered graphite layers with a core–shell like structure. And, the tangled CNFs and the regular silicon-pillar array formed a nanometer-micron hierarchy structure. The electron field-emission (FE) property of CNFs/Si-NPA was measured and low turn-on field, high-density and stable FE current, high enhancement factor were obtained. The outstanding FE performance of the CNFs/Si-NPA emitters was attributed to the random orientation and defects of CNFs, the undulate surface of the Si-NPA substrate.

  2. [FTIR spectroscopic studies of inner stress on boron carbon nitride thin films].

    Science.gov (United States)

    Wang, Yu-Xin; Zheng, Ya-Ru; Song, Zhe; Feng, Ke-Cheng; Zhao, Yong-Nian

    2008-07-01

    Boron carbon nitride thin films were deposited by radio frequency (RF) magnetron sputtering technique using a 50 mm-diameter composite target consisting of h-BN and graphite in an Ar-N2 gas mixture. The composite target was composed of two semi disks: one of h-BN and the other one of graphite. The distance between the target and the substrate was kept at 50 mm. The chamber base pressure was below 5 x 10(-4) Pa. During the deposition, the mixture of Ar (80%) and N2 (20%) was injected into the vacuum chamber and the total pressure was 1.3 Pa. The films were grown on silicon substrates at different deposition parameters, including sputtering power of 80-130 W, deposition temperature of 300-500 degrees C and deposition time of 1-4 h. The chemical bonding state of the samples was characterized by Fourier transform infrared absorption spectroscopy (FTIR). The results suggested that all of the films deposited at these deposition parameters are atomic-level hybrids composed of B, C and N atoms. Besides BN and carbons bonds, the boron carbide and carbon nitride bonds were formed in the BCN thin films. And the deposition parameters have important influences on the growth and inner stress of BCN thin films. That is the higher the sputtering power, the larger the inner stress; the higher or lower the deposition temperature, the larger the inner stress; the longer the deposition time, the larger the inner stress. So changing deposition parameters properly is a feasible method to relax the inner stress between the films and substrate. In the conditions of changing one parameter each time, the optimum deposition parameters to prepare BCN thin films with lower inner stress were obtained: sputtering power of 80 W, deposition temperature of 400 degrees C and deposition time of 2 h.

  3. Epitaxially grown polycrystalline silicon thin-film solar cells on solid-phase crystallised seed layers

    Energy Technology Data Exchange (ETDEWEB)

    Li, Wei, E-mail: weili.unsw@gmail.com; Varlamov, Sergey; Xue, Chaowei

    2014-09-30

    Highlights: • Crystallisation kinetic is used to analyse seed layer surface cleanliness. • Simplified RCA cleaning for the seed layer can shorten the epitaxy annealing duration. • RTA for the seed layer can improve the quality for both seed layer and epi-layer. • Epitaxial poly-Si solar cell performance is improved by RTA treated seed layer. - Abstract: This paper presents the fabrication of poly-Si thin film solar cells on glass substrates using seed layer approach. The solid-phase crystallised P-doped seed layer is not only used as the crystalline template for the epitaxial growth but also as the emitter for the solar cell structure. This paper investigates two important factors, surface cleaning and intragrain defects elimination for the seed layer, which can greatly influence the epitaxial grown solar cell performance. Shorter incubation and crystallisation time is observed using a simplified RCA cleaning than the other two wet chemical cleaning methods, indicating a cleaner seed layer surface is achieved. Cross sectional transmission microscope images confirm a crystallographic transferal of information from the simplified RCA cleaned seed layer into the epi-layer. RTA for the SPC seed layer can effectively eliminate the intragrain defects in the seed layer and improve structural quality of both of the seed layer and the epi-layer. Consequently, epitaxial grown poly-Si solar cell on the RTA treated seed layer shows better solar cell efficiency, V{sub oc} and J{sub sc} than the one on the seed layer without RTA treatment.

  4. ALD grown nanostructured ZnO thin films: Effect of substrate temperature on thickness and energy band gap

    Directory of Open Access Journals (Sweden)

    Javed Iqbal

    2016-10-01

    Full Text Available Nanostructured ZnO thin films with high transparency have been grown on glass substrate by atomic layer deposition at various temperatures ranging from 100 °C to 300 °C. Efforts have been made to observe the effect of substrate temperature on the thickness of the deposited thin films and its consequences on the energy band gap. A remarkably high growth rate of 0.56 nm per cycle at a substrate temperature of 200 °C for ZnO thin films have been achieved. This is the maximum growth rate for ALD deposited ZnO thin films ever reported so far to the best of our knowledge. The studies of field emission scanning electron microscopy and X-ray diffractometry patterns confirm the deposition of uniform and high quality nanosturtured ZnO thin films which have a polycrystalline nature with preferential orientation along (100 plane. The thickness of the films deposited at different substrate temperatures was measured by ellipsometry and surface profiling system while the UV–visible and photoluminescence spectroscopy studies have been used to evaluate the optical properties of the respective thin films. It has been observed that the thickness of the thin film depends on the substrate temperatures which ultimately affect the optical and structural parameters of the thin films.

  5. Properties of electrophoretically deposited single wall carbon nanotube films

    Energy Technology Data Exchange (ETDEWEB)

    Lim, Junyoung; Jalali, Maryam; Campbell, Stephen A., E-mail: campb001@umn.edu

    2015-08-31

    This paper describes techniques for rapidly producing a carbon nanotube thin film by electrophoretic deposition at room temperature and determines the film mass density and electrical/mechanical properties of such films. The mechanism of electrophoretic deposition of thin layers is explained with experimental data. Also, film thickness is measured as a function of time, electrical field and suspension concentration. We use Rutherford backscattering spectroscopy to determine the film mass density. Films created in this manner have a resistivity of 2.14 × 10{sup −3} Ω·cm, a mass density that varies with thickness from 0.12 to 0.54 g/cm{sup 3}, and a Young's modulus between 4.72 and 5.67 GPa. The latter was found to be independent of thickness from 77 to 134 nm. We also report on fabricating free-standing films by removing the metal seed layer under the CNT film, and selectively etching a sacrificial layer. This method could be extended to flexible photovoltaic devices or high frequency RF MEMS devices. - Highlights: • We explain the electrophoretic deposition process and mechanism of thin SWCNT film deposition. • Characterization of the SWCNT film properties including density, resistivity, transmittance, and Young's modulus. • The film density and resistivity are found to be a function of the film thickness. • Techniques developed to create free standing layers of SW-CNTs for flexible electronics and mechanical actuators.

  6. Angular magnetoresistance in semiconducting undoped amorphous carbon thin films

    Energy Technology Data Exchange (ETDEWEB)

    Sagar, Rizwan Ur Rehman; Saleemi, Awais Siddique; Zhang, Xiaozhong, E-mail: xzzhang@tsinghua.edu.cn [Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, People' s Republic of China and Beijing National Center for Electron Microscopy, Beijing 100084 (China)

    2015-05-07

    Thin films of undoped amorphous carbon thin film were fabricated by using Chemical Vapor Deposition and their structure was investigated by using High Resolution Transmission Electron Microscopy and Raman Spectroscopy. Angular magnetoresistance (MR) has been observed for the first time in these undoped amorphous carbon thin films in temperature range of 2 ∼ 40 K. The maximum magnitude of angular MR was in the range of 9.5% ∼ 1.5% in 2 ∼ 40 K. The origin of this angular MR was also discussed.

  7. Characterization of MgZnO films grown by plasma enhanced metal-organic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Asahara, Hirokazu, E-mail: hirokazu.asahara@dsn.rohm.co.j [New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aza Aoba, Aramaki, Aoba-ku, Sendai, 980-8579 (Japan); Graduate School of Engineering, Tohoku University, 6-6-05 Aza Aoba, Aramaki, Aoba-ku, Sendai, 980-8579 (Japan); ROHM Co., Ltd., 21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto, 615-8585 (Japan); Takamizu, Daiju [ROHM Co., Ltd., 21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto, 615-8585 (Japan); Inokuchi, Atsutoshi [New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aza Aoba, Aramaki, Aoba-ku, Sendai, 980-8579 (Japan); Tokyo Electron, Ltd., 650 Mitsusawa, Hosaka, Nirasaki, Yamanashi, 407-0192 (Japan); Hirayama, Masaki; Teramoto, Akinobu [New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aza Aoba, Aramaki, Aoba-ku, Sendai, 980-8579 (Japan); Saito, Shin; Takahashi, Migaku [Graduate School of Engineering, Tohoku University, 6-6-05 Aza Aoba, Aramaki, Aoba-ku, Sendai, 980-8579 (Japan); Ohmi, Tadahiro [New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aza Aoba, Aramaki, Aoba-ku, Sendai, 980-8579 (Japan); WPI Research Center, Tohoku University, 6-6-10 Aza Aoba, Aramaki, Aoba-ku, Sendai, 980-8579 (Japan)

    2010-03-31

    MgZnO (magnesium-zinc-oxide) films were grown on (11-20) sapphire substrates and Zn-polar ZnO substrates by plasma enhanced metal-organic chemical vapor deposition (PE-MOCVD) employing microwave-excited plasma. Structural, electrical and optical properties were investigated by X-ray diffraction, atomic force microscope, Hall, transmittance and photoluminescence measurement. The c-axis lattice constant decreases proportionally to an increase in the Mg content of Mg{sub x}Zn{sub 1-x}O films. Therefore, this indicates that Mg atoms can be substituted in the Zn sites. Mg contents in films on ZnO substrates increase up to 0.11. In addition, Ga doped ZnO films were grown on (11-20) sapphire substrates. The resistivity of the films on (11-20) sapphire is controlled between 1.2 x 10{sup -3} {Omega} cm to 1 {Omega} cm by changing the process conditions. The overall results indicate the promising potential of this PE-MOCVD method for related (Zn, Mg)O films formation because of the reactivity of the radicals, such as oxygen radicals (O*).

  8. Annealing Effect on the Structural and Optical Properties of Sputter-Grown Bismuth Titanium Oxide Thin Films

    Directory of Open Access Journals (Sweden)

    José E. Alfonso

    2014-04-01

    Full Text Available The aim of this work is to assess the evolution of the structural and optical properties of BixTiyOz films grown by rf magnetron sputtering upon post-deposition annealing treatments in order to obtain good quality films with large grain size, low defect density and high refractive index similar to that of single crystals. Films with thickness in the range of 220–250 nm have been successfully grown. After annealing treatment at 600 °C the films show excellent transparency and full crystallization. It is shown that to achieve larger crystallite sizes, up to 17 nm, it is better to carry the annealing under dry air than under oxygen atmosphere, probably because the nucleation rate is reduced. The refractive index of the films is similar under both atmospheres and it is very high (n =2.5 at 589 nm. However it is still slightly lower than that of the single crystal value due to the polycrystalline morphology of the thin films.

  9. Carbon nanowalls grown by microwave plasma enhanced chemical vapor deposition during the carbonization of polyacrylonitrile fibers

    Energy Technology Data Exchange (ETDEWEB)

    Li Jiangling; Su Shi; Kundrat, Vojtech; Abbot, Andrew M.; Ye, Haitao [School of Engineering and Applied Science, Aston University, Birmingham B4 7ET (United Kingdom); Zhou Lei [Department of Metallurgy and Materials, University of Birmingham, Birmingham B15 2TT (United Kingdom); Mushtaq, Fajer [Department of Mechanical Engineering, ETH Zurich, Zurich 8092 (Switzerland); Ouyang Defang [School of Life and Health Science, Aston University, Birmingham B4 7ET (United Kingdom); James, David; Roberts, Darren [Thermo Fisher Scientific, Stafford House, Hemel Hempstead HP2 7GE (United Kingdom)

    2013-01-14

    We used microwave plasma enhanced chemical vapor deposition (MPECVD) to carbonize an electrospun polyacrylonitrile (PAN) precursor to form carbon fibers. Scanning electron microscopy, Raman spectroscopy, and Fourier transform infrared spectroscopy were used to characterize the fibers at different evolution stages. It was found that MPECVD-carbonized PAN fibers do not exhibit any significant change in the fiber diameter, whilst conventionally carbonized PAN fibers show a 33% reduction in the fiber diameter. An additional coating of carbon nanowalls (CNWs) was formed on the surface of the carbonized PAN fibers during the MPECVD process without the assistance of any metallic catalysts. The result presented here may have a potential to develop a novel, economical, and straightforward approach towards the mass production of carbon fibrous materials containing CNWs.

  10. Carbon nanowalls grown by microwave plasma enhanced chemical vapor deposition during the carbonization of polyacrylonitrile fibers

    Science.gov (United States)

    Li, Jiangling; Su, Shi; Zhou, Lei; Kundrát, Vojtěch; Abbot, Andrew M.; Mushtaq, Fajer; Ouyang, Defang; James, David; Roberts, Darren; Ye, Haitao

    2013-01-01

    We used microwave plasma enhanced chemical vapor deposition (MPECVD) to carbonize an electrospun polyacrylonitrile (PAN) precursor to form carbon fibers. Scanning electron microscopy, Raman spectroscopy, and Fourier transform infrared spectroscopy were used to characterize the fibers at different evolution stages. It was found that MPECVD-carbonized PAN fibers do not exhibit any significant change in the fiber diameter, whilst conventionally carbonized PAN fibers show a 33% reduction in the fiber diameter. An additional coating of carbon nanowalls (CNWs) was formed on the surface of the carbonized PAN fibers during the MPECVD process without the assistance of any metallic catalysts. The result presented here may have a potential to develop a novel, economical, and straightforward approach towards the mass production of carbon fibrous materials containing CNWs.

  11. Interfacially engineered oxygen octahedral rotations and their impact on strain relief in coherently grown SrRu O3 films

    Science.gov (United States)

    Kan, Daisuke; Wakabayashi, Yusuke; Tajiri, Hiroo; Shimakawa, Yuichi

    2016-07-01

    We report synchrotron x-ray diffraction investigations of interfacially engineered oxygen octahedral rotations and their impact on strain relief in perovskite SrRu O3 films. We show that octahedral rotations with distinct patterns and magnitudes can be accommodated into coherently grown films. The SrRu O3 film grown directly on the GdSc O3 substrate has the Ru O6 octahedral rotation with the a-b+c- pattern in the Glazer notation and the rotation angles of αrot=6.6 ±0 .2∘ , βrot=5.5 ±0 .2∘ , and γrot=3.6 ±0 .2∘ . On the other hand, when a 1-nm-thick BaTi O3 layer without Ti O6 rotations is inserted between the SrRu O3 and GdSc O3 , the SrRu O3 has the Ru O6 rotation with a-b0c+ , and αrot=5.6 ±0 .8∘ and γrot=3.6 ±0 .8∘ . These results indicate that there are some degrees of freedom in the octahedral rotations accommodated in SrRu O3 depending on the interface structure and that the γrot rotations play the important roles in the film's structural properties when the rotation about the [010] pc axis is blocked. We also found that the strain relief in the film is influenced by the interfacially engineered octahedral rotations. The interfacial BaTi O3 layer results in the in-plane periodic lattice modulation in the t-SRO film, allowing for the anisotropic relief of the substrate-induced strain. The results highlight the importance of the interface structure as a factor, determining not only octahedral rotations in coherently grown SRO films but also the strain reliefs in them.

  12. Electrical and optical properties of carbon-doped GaN grown by MBE on MOCVD GaN templates using a CCl4 dopant source

    Energy Technology Data Exchange (ETDEWEB)

    Armitage, Rob; Yang, Qing; Feick, Henning; Park, Yeonjoon; Weber, Eicke R.

    2002-04-15

    Carbon-doped GaN was grown by plasma-assisted molecular-beam epitaxy using carbon tetrachloride vapor as the dopant source. For moderate doping mainly acceptors were formed, yielding semi-insulating GaN. However at higher concentrations p-type conductivity was not observed, and heavily doped films (>5 x 10{sup 20} cm{sup -3}) were actually n-type rather than semi-insulating. Photoluminescence measurements showed two broad luminescence bands centered at 2.2 and 2.9 eV. The intensity of both bands increased with carbon content, but the 2.2 eV band dominated in n-type samples. Intense, narrow ({approx}6 meV) donor-bound exciton peaks were observed in the semi-insulating samples.

  13. Effect of tin doping on optical properties of nanostructured ZnO thin films grown by spray pyrolysis technique

    Energy Technology Data Exchange (ETDEWEB)

    Bedia, F.Z.; Bedia, A. [URMER, Abou-Bakr Belkaid University, 13000 Tlemcen (Algeria); Maloufi, N., E-mail: nabila.maloufi@univ-lorraine.fr [Laboratoire d’Étude des Microstructures et de Mécanique des Matériaux (LEM3), UMR-CNRS 7239, Université de Lorraine, 57045 Metz (France); Laboratory of Excellence on Design of Alloy Metals for low-mAss Structures (DAMAS), Université de Lorraine (France); Aillerie, M.; Genty, F. [LMOPS-EA 4423, Université de Lorraine, 57070 Metz (France); Supelec, LMOPS, 57070 Metz (France); Benyoucef, B. [URMER, Abou-Bakr Belkaid University, 13000 Tlemcen (Algeria)

    2014-12-15

    Highlights: • (0–2%) Sn-doped ZnO films grown by spray pyrolysis on glass substrates. • Transmittance up to 93% in visible region, sharp absorption edge at 360 nm. • Blue shift of optical band gap: E{sub g} = 3.27 eV for 0% Sn; Eg{sub max} = 3.30 eV for 0.5% Sn. • All the optical parameters reach threshold values for 0.5% Sn-doped ZnO films. • Good physical properties suited for films integration in optoelectronic devices. - Abstract: Sn-doped ZnO thin films with 0%, 0.5%, 1%, 1.5% and 2% Sn were grown by spray pyrolysis method on glass substrates under optimized conditions. High resolution Field Effect Scanning Electron Microscopy characterization showed that the films consist of hexagonal-like grains. A comprehensive study of the optical properties was performed and the dispersion constants were determined. The effect of Sn content on the optical band gap and the optical constants (refractive index, extinction coefficient, dielectric constants, and dispersion parameters) was studied. These Sn-doped ZnO thin films are highly transparent (73–93%) in the visible region. A blue shift of the optical band gap, attributed to the Burstein Moss effect, was observed for the Sn-doped films. All the optical dispersion parameters depend on the Sn content of the films, but were found to reach threshold values at a Sn content of 0.5%. These optical parameters are discussed in terms of the single oscillator model. This study demonstrated that this 0.5% Sn-doped ZnO thin film has enhanced physical properties, allowing its better integration in optoelectronic devices.

  14. Effect of tin doping on optical properties of nanostructured ZnO thin films grown by spray pyrolysis technique

    International Nuclear Information System (INIS)

    Highlights: • (0–2%) Sn-doped ZnO films grown by spray pyrolysis on glass substrates. • Transmittance up to 93% in visible region, sharp absorption edge at 360 nm. • Blue shift of optical band gap: Eg = 3.27 eV for 0% Sn; Egmax = 3.30 eV for 0.5% Sn. • All the optical parameters reach threshold values for 0.5% Sn-doped ZnO films. • Good physical properties suited for films integration in optoelectronic devices. - Abstract: Sn-doped ZnO thin films with 0%, 0.5%, 1%, 1.5% and 2% Sn were grown by spray pyrolysis method on glass substrates under optimized conditions. High resolution Field Effect Scanning Electron Microscopy characterization showed that the films consist of hexagonal-like grains. A comprehensive study of the optical properties was performed and the dispersion constants were determined. The effect of Sn content on the optical band gap and the optical constants (refractive index, extinction coefficient, dielectric constants, and dispersion parameters) was studied. These Sn-doped ZnO thin films are highly transparent (73–93%) in the visible region. A blue shift of the optical band gap, attributed to the Burstein Moss effect, was observed for the Sn-doped films. All the optical dispersion parameters depend on the Sn content of the films, but were found to reach threshold values at a Sn content of 0.5%. These optical parameters are discussed in terms of the single oscillator model. This study demonstrated that this 0.5% Sn-doped ZnO thin film has enhanced physical properties, allowing its better integration in optoelectronic devices

  15. Green emission in carbon doped ZnO films

    Directory of Open Access Journals (Sweden)

    L. T. Tseng

    2014-06-01

    Full Text Available The emission behavior of C-doped ZnO films, which were prepared by implantation of carbon into ZnO films, is investigated. Orange/red emission is observed for the films with the thickness of 60–100 nm. However, the film with thickness of 200 nm shows strong green emission. Further investigations by annealing bulk ZnO single crystals under different environments, i.e. Ar, Zn or C vapor, indicated that the complex defects based on Zn interstitials are responsible for the strong green emission. The existence of complex defects was confirmed by electron spin resonance (ESR and low temperature photoluminescence (PL measurement.

  16. Field Emission from Nanostructured Carbon Films on Si Tips

    Institute of Scientific and Technical Information of China (English)

    王万录; 廖克俊; 胡成果; 方亮

    2001-01-01

    Nanostructured carbon thin films on Si tips were prepared by hot filament chemical vapour deposition at different substrate temperatures. The Si tips and films were obtained under various deposition conditions in the same reaction chamber. It was found that the field emission properties from graphite-like nanostructured carbon on Si tips were greatly improved, compared with those of nanodiamond films on Si tips. A turn-on field of 1.2 V. cm-1was observed for high sp2 content thin films on Si tips. The analysis showed that the field emission enhancement effect was caused by the tip geometry, tunnel effect and sp2 content in the films. However, the geometrical enhancement was greater than that of the tunnel and sp2 content effects.

  17. Field Emission Properties of Nitrogen-doped Amorphous Carbon Films

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    Nitrogen-doped amorphous carbon thin films are deposited on the ceramic substrates coated with Ti film by using direct current magnetron sputtering technique at N2 and Ar gas mixture atmosphere during deposition. The field emission properties of the deposited films have been investigated. The threshold field as low as 5.93V/μm is obtained and the maximum current density increases from 4μA/cm2 to 20.67μA/cm2 at 10.67V/μm comparing with undoped amorphous film. The results show that nitrogen doping plays an important role in field emission of amorphous carbon thin films.

  18. Thickness dependence of critical current density in MgB{sub 2} films fabricated by ex situ annealing of CVD-grown B films in Mg vapor

    Energy Technology Data Exchange (ETDEWEB)

    Hanna, Mina; Salama, Kamel [Department of Mechanical Engineering and Texas Center for Superconductivity, University of Houston, Houston, TX 77204 (United States); Wang, Shufang; Xi, X X [Department of Physics, Pennsylvania State University, University Park, PA 16801 (United States); Redwing, Joan M [Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16801 (United States)], E-mail: ksalama@uh.edu

    2009-01-15

    A study was performed to examine the J{sub c} behavior as a function of thickness in MgB{sub 2} films fabricated by ex situ annealing at 840 deg. C of boron films, grown by chemical vapor deposition, in Mg vapor. The film thicknesses range between 300 nm and 10 {mu}m. The values of J{sub c} range from 1.2 x 10{sup 7} A cm{sup -2} for 300 nm to 1.9 x 10{sup 5} A cm{sup -2} for 10 {mu}m film thicknesses at 20 K and self-field. The study shows that the critical current density (J{sub c}) in MgB{sub 2} films decreases with increasing film thickness, similar to that observed in YBCO-coated conductors. Moreover, our study shows that critical current (I{sub c}) reaches its maximum value of 728 A cm{sup -1} width at {approx}1 {mu}m thick MgB{sub 2} films at 20 K and self-field, which is, interestingly, the same thickness of pulsed-laser-deposited YBCO-coated conductors at which I{sub c} reaches its maximum value. The high J{sub c} values carried by our films show that the ex situ fabrication method can produce high quality MgB{sub 2} films at low processing temperatures, which is promising for RF cavity applications and coated-conductor wires and tapes.

  19. Flexible supercapacitor electrodes with vertically aligned carbon nanotubes grown on aluminum foils

    Directory of Open Access Journals (Sweden)

    Itir Bakis Dogru

    2016-06-01

    Full Text Available In this work, vertically aligned carbon nanotubes (VACNTs grown on aluminum foils were used as flexible supercapacitor electrodes. Aluminum foils were used as readily available, cheap and conductive substrates, and VACNTs were grown directly on these foils through chemical vapor deposition (CVD method. Solution based ultrasonic spray pyrolysis (USP method was used for the deposition of the CNT catalyst. Direct growth of VACNTs on aluminum foils ruled out both the internal resistance of the supercapacitor electrodes and the charge transfer resistance between the electrode and electrolyte. A specific capacitance of 2.61 mF/cm2 at a scan rate of 800 mV/s was obtained from the fabricated electrodes, which is further improved through the bending cycles.

  20. Electrochemical properties of seamless three-dimensional carbon nanotubes-grown graphene modified with horseradish peroxidase.

    Science.gov (United States)

    Komori, Kikuo; Terse-Thakoor, Trupti; Mulchandani, Ashok

    2016-10-01

    Horseradish peroxidase (HRP) was immobilized through sodium dodecyl sulfate (SDS) on the surface of a seamless three-dimensional hybrid of carbon nanotubes grown at the graphene surface (HRP-SDS/CNTs/G) and its electrochemical properties were investigated. Compared with graphene alone electrode modified with HRP via SDS (HRP-SDS/G electrode), the surface coverage of electroactive HRP at the CNTs/G electrode surface was approximately 2-fold greater because of CNTs grown at the graphene surface. Based on the increase in the surface coverage of electroactive HRP, the sensitivity to H2O2 at the HRP-SDS/CNTs/G electrode was higher than that at the HRP-SDS/G electrode. The kinetics of the direct electron transfer from the CNTs/G electrode to compound I and II of modified HRP was also analyzed. PMID:27224430

  1. Flexible supercapacitor electrodes with vertically aligned carbon nanotubes grown on aluminum foils

    Institute of Scientific and Technical Information of China (English)

    Itir Bakis Dogru; Mete Batuhan Durukan; Onur Turel; Husnu Emrah Unalan

    2016-01-01

    In this work, vertically aligned carbon nanotubes (VACNTs) grown on aluminum foils were used as flexible supercapacitor electrodes. Aluminum foils were used as readily available, cheap and conductive substrates, and VACNTs were grown directly on these foils through chemical vapor deposition (CVD) method. Solution based ultrasonic spray pyrolysis (USP) method was used for the deposition of the CNT catalyst. Direct growth of VACNTs on aluminum foils ruled out both the internal resistance of the su-percapacitor electrodes and the charge transfer resistance between the electrode and electrolyte. A specific capacitance of 2.61 mF/cm2 at a scan rate of 800 mV/s was obtained from the fabricated elec-trodes, which is further improved through the bending cycles.

  2. Superior capacitive characteristics of RuO2 nanorods grown on carbon nanotubes

    International Nuclear Information System (INIS)

    Carbon nanotubes (CNTs) were used as the electric double layer capacitor (EDLC) material and were synthesized by using thermal chemical vapor deposition (TCVD). To enhance the EDLC capacity, the ruthenium dioxide (RuO2) nanorods were grown on CNTs by using metal organic chemical vapor deposition (MOCVD). The synthesized CNTs were the principal part and template, and the RuO2 nanorods were grown outwardly from CNTs. The increase of effective specific area between electrode and electrolyte played an important role in enhancing the capacitance. Different concentrations of KOH were used as electrolyte to measure the capacitance to find the variation of capacitance. Moreover, the RuO2/CNT composites demonstrated a stable cycle life. The results showed that the RuO2/CNT composites were a promising supercapacitor device material.

  3. Effect of Substrate Morphology on Growth and Field Emission Properties of Carbon Nanotube Films

    Directory of Open Access Journals (Sweden)

    Kumar Vikram

    2008-01-01

    Full Text Available AbstractCarbon nanotube (CNT films were grown by microwave plasma-enhanced chemical vapor deposition process on four types of Si substrates: (i mirror polished, (ii catalyst patterned, (iii mechanically polished having pits of varying size and shape, and (iv electrochemically etched. Iron thin film was used as catalytic material and acetylene and ammonia as the precursors. Morphological and structural characteristics of the films were investigated by scanning and transmission electron microscopes, respectively. CNT films of different morphology such as vertically aligned, randomly oriented flowers, or honey-comb like, depending on the morphology of the Si substrates, were obtained. CNTs had sharp tip and bamboo-like internal structure irrespective of growth morphology of the films. Comparative field emission measurements showed that patterned CNT films and that with randomly oriented morphology had superior emission characteristics with threshold field as low as ~2.0 V/μm. The defective (bamboo-structure structures of CNTs have been suggested for the enhanced emission performance of randomly oriented nanotube samples.

  4. Increasing mouse embryonic fibroblast cells adhesion on superhydrophilic vertically aligned carbon nanotube films

    Energy Technology Data Exchange (ETDEWEB)

    Lobo, A.O., E-mail: loboao@yahoo.com [Laboratory of Biomedical Nanotechnology (NanoBio), Instituto de Pesquisa e Desenvolvimento (IP and D), Universidade do Vale do Paraiba UniVap, Avenida Shishima Hifumi 2911, Sao Jose dos Campos, 12244-000, SP (Brazil) and Laboratory of Biomedical Vibrational Spectroscopy (LEVB), Instituto de Pesquisa e Desenvolvimento (IP and D), Universidade do Vale do Paraiba UniVap, Avenida Shishima Hifumi 2911, Sao Jose dos Campos, 12244-000, SP (Brazil); Marciano, F.R. [Laboratory of Biomedical Nanotechnology (NanoBio), Instituto de Pesquisa e Desenvolvimento (IP and D), Universidade do Vale do Paraiba UniVap, Avenida Shishima Hifumi 2911, Sao Jose dos Campos, 12244-000, SP (Brazil); Laboratory of Biomedical Vibrational Spectroscopy LEVB, Instituto de Pesquisa e Desenvolvimento (IP and D), Universidade do Vale do Paraiba (UniVap), Avenida Shishima Hifumi 2911, Sao Jose dos Campos, 12244-000, SP (Brazil); Ramos, S.C. [Laboratorio Associado de Sensores e Materiais (LAS), Instituto Nacional de Pesquisas Espaciais (INPE), Avenida dos Astronautas 1758, Sao Jose dos Campos, 12.245-970, SP (Brazil); Machado, M.M. [Centro Multidisciplinar para Investigacao Biologica na Area da Ciencia em Animais de Laboratorio (CEMIB), Universidade Estadual de Campinas (UNICAMP), Rua 05 de Junho s/no, Cidade Universitaria ' Zeferino Vaz' , 13083-877, Campinas (Brazil); Corat, E.J. [Laboratorio Associado de Sensores e Materiais (LAS), Instituto Nacional de Pesquisas Espaciais (INPE), Avenida dos Astronautas 1758, Sao Jose dos Campos, 12.245-970, SP (Brazil); Corat, M.A.F. [Centro Multidisciplinar para Investigacao Biologica na Area da Ciencia em Animais de Laboratorio (CEMIB), Universidade Estadual de Campinas (UNICAMP), Rua 05 de Junho s/no, Cidade Universitaria ' Zeferino Vaz' , 13083-877, Campinas (Brazil)

    2011-10-10

    We have analyzed the adhesion of mouse embryonic fibroblasts (MEFs) genetically modified by green fluorescence protein (GFP) gene cultured on vertically-aligned carbon nanotubes (VACNTs) after 6 days. The VACNTs films grown on Ti were obtained by microwave plasma chemical vapor deposition process using Fe catalyst and submitted to an oxygen plasma treatment, for 2 min, at 400 V and 80 mTorr, to convert them to superhydrophilic. Cellular adhesion and morphology were analyzed by scanning electron, fluorescence microscopy, and thermodynamics analysis. Characterizations of superhydrophilic VACNTs films were evaluated by contact angle and X-Ray Photoelectron Spectroscopy. Differences of crowd adhered cells, as well as their spreading on superhydrophilic VACNTs scaffolds, were evaluated using focal adhesion analysis. This study was the first to demonstrate, in real time, that the wettability of VACNTs scaffolds might have enhanced and differential adherence patterns to the MEF-GFP on VACNTs substrates. Highlights: {yields} A simple oxygen plasma treatment was used to obtain superhydrophilic CNT films. {yields} Superhydrophilic CNTs films were successfully produced by incorporation of carboxylic groups. {yields} Cellular adhesion on superhydrophilic VACNT films was analyzed in real time. {yields} Wettability of CNT films directly affects the cellular migration, proliferation and adhesion.

  5. Dynamics of surface evolution in semiconductor thin films grown from a chemical bath.

    Science.gov (United States)

    Gupta, Indu; Mohanty, Bhaskar Chandra

    2016-01-01

    Dynamics of surface evolution in CdS thin films grown by chemical bath deposition technique has been studied from time sequence of atomic force micrographs. Detailed scaling analysis of surface fluctuation in real and Fourier space yielded characteristic exponents αloc = 0.78 ± 0.07, α = 2.20 ± 0.08, αs = 1.49 ± 0.22, β = 0.86 ± 0.05 and βloc = 0.43 ± 0.10, which are very different from those predicted by the local growth models and are not related to any known universality classes. The observed anomalous scaling pattern, characterized by power law scaling dependence of interface width on deposition time differently at local and global scale, with rapid roughening of the growth front has been discussed to arise as a consequence of a nonlocal effect in the form of diffusional instability. PMID:27615367

  6. Graphene films grown on sapphire substrates via solid source molecular beam epitaxy

    Institute of Scientific and Technical Information of China (English)

    Tang Jun; Kang Chao-Yang; Li Li-Min; Liu Zhong-Liang; Yan Wen-Sheng; Wei Shi-Qiang; Xu Peng-Shou

    2012-01-01

    A method for growing graphene on a sapphire substrate by depositing an SiC buffer layer and then annealing at high temperature in solid source molecular beam epitaxy(SSMBE)equipment was presented.The structural and electronic properties of the samples were characterized by reflection high energy diffraction(RHEED),X-ray diffractionφ scans,Raman spectroscopy,and near edge X-ray absorption fine structure(NEXAFS)spectroscopy.The results of the RHEED and φ scan,as well as the Raman spectra,showed that an epitaxial hexagonal α-SiC layer was grown on the sapphire substrate.The results of the Raman and NEXAFS spectra revealed that the graphene films with the AB Bernal stacking structure were formed on the sapphire substrate after annealing.The layer number of the graphene was between four and five,and the thickness of the unreacted SiC layer was about 1-1.5 mm.

  7. Influence of substrate on structural, morphological and optical properties of ZnO films grown by SILAR method

    Indian Academy of Sciences (India)

    F N Jiménez-García; C L Londoño-Calderón; D G Espinosa-Arbeláez; A Del Real; M E Rodríguez-García

    2014-10-01

    ZnO films were obtained by successive ionic layer adsorption and reaction (SILAR) method from four different substrates: glass microslides, corning glass, quartz and silicon with and without oxide layer. For films deposition, a precursor solution of ZnSO4 was used, complexed with ammonium hydroxide. Prior to the film deposition, wettability of the substrates was analysed using a CCD camera. It was found that the Si without the oxide layer substrate shows hydrophobic behaviour, which makes the films less adherent and not uniform, while in the other substrates, the behaviour was optimal for the growing process. ZnO films grown on glass microslides, corning glass, quartz and Si with oxide layer were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM) and UV–Vis techniques. According to the XRD patterns, the films were polycrystalline, with hexagonal wurtzite structure and the patterns mentioned showed significant differences in crystallite sizes, microstrain and texture coefficient with respect to the employed substrates. The morphology of the ZnO films constituted by rice-like and flower-like structures shows differences in form and size depending on the substrate. The UV–Vis spectroscopy results show that the substrate did not influence the band gap energy value obtained from films.

  8. Electrical properties of scandium nitride epitaxial films grown on (100) magnesium oxide substrates by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Ohgaki, Takeshi; Watanabe, Ken; Adachi, Yutaka; Sakaguchi, Isao; Hishita, Shunichi; Ohashi, Naoki; Haneda, Hajime [Environment and Energy Materials Research Division, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)

    2013-09-07

    Scandium nitride (ScN) films were grown on (100) MgO single crystals by a molecular beam epitaxy method. The effects of growth conditions, including [Sc]/[N] ratio, growth temperature, and nitrogen radical state, on the electrical properties of the ScN films were studied. The ScN films comprised many small columnar grains. Hall coefficient measurements confirmed that the ScN films were highly degenerate n-type semiconductors and that the carrier concentration of the ScN films was sensitive to the growth temperature and the nitrogen radical states during the film growth. The carrier concentrations of the ScN films ranged from 10{sup 19}–10{sup 21} cm{sup −3} while the Hall mobilities ranged from 50–130 cm{sup 2}·V{sup −1}·s{sup −1} for undoped films. The temperature-dependent Hall coefficient measurements showed that the carrier concentration is nearly independent of temperature, indicating that the change in resistivity with temperature is explained by a change in the Hall mobility. The temperature-dependence of the Hall mobility was strongly affected by the growth conditions.

  9. Critical thickness and strain relaxation in molecular beam epitaxy-grown SrTiO3 films

    Science.gov (United States)

    Wang, Tianqi; Ganguly, Koustav; Marshall, Patrick; Xu, Peng; Jalan, Bharat

    2013-11-01

    We report on the study of the critical thickness and the strain relaxation in epitaxial SrTiO3 film grown on (La0.3Sr0.7)(Al0.65Ta0.35)O3 (001) (LSAT) substrate using the hybrid molecular beam epitaxy approach. No change in the film's lattice parameter (both the in-plane and the out-of-plane) was observed up to a film thickness of 180 nm, which is in sharp contrast to the theoretical critical thickness of ˜12 nm calculated using the equilibrium theory of strain relaxation. For film thicknesses greater than 180 nm, the out-of-plane lattice parameter was found to decrease hyperbolically in an excellent agreement with the relaxation via forming misfit dislocations. Possible mechanisms are discussed by which the elastic strain energy can be accommodated prior to forming misfit dislocations leading to such anomalously large critical thickness.

  10. Study of optical and structural properties of CZTS thin films grown by co-evaporation and spray pyrolysis

    Science.gov (United States)

    Moreno, R.; Ramirez, E. A.; Gordillo Guzmán, G.

    2016-02-01

    Results regarding optical and structural properties of Cu2ZnSnS4 (CZTS) thin films prepared by co-evaporation using a novel procedure are compared with those obtained with CZTS films grown using a solution based route. The lattice strain ε and crystallite size D of CZTS films prepared by co-evaporation and by spray pyrolysis were estimated through X-ray diffraction (XRD) measurements using Williamson-Hall-isotropic strain model. The results of estimated average crystallite size of CZTS films by Scherrer and Williamson-Hall plot methods were compared with AFM (atomic force microscopy) measurements. It was found that the average crystallite size measured by Williamson-Hall plot methods agree quite well with AFM results. Further, information regarding the influence of preparation method on both, crystalline phases and the formation of structural defects was achieved through Raman and Urbach energy measurements.

  11. Effects of sapphire substrates surface treatment on the ZnO thin films grown by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Wang Yinzhen [School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou 510631 (China)], E-mail: agwyz@yahoo.com.cn; Chu Benli [School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou 510631 (China)

    2008-06-01

    The surface treatment effects of sapphire substrate on the ZnO thin films grown by magnetron sputtering were studied. The sapphire substrates properties have been investigated by means of atomic force microscopy (AFM) and X-ray diffraction rocking curves (XRCs). The results show that sapphire substrate surfaces have the best quality by CMP with subsequent chemical etching. The surface treatment effects of sapphire substrate on the ZnO thin films were examined by X-ray diffraction (XRD) and photoluminescence (PL) measurements. Results show that the intensity of (0 0 2) diffraction peak of ZnO thin films on sapphire substrates treated by CMP with subsequent chemical etching was strongest, FWHM of (0 0 2) diffraction peak is the narrowest and the intensity of UV peak of PL spectrum is strongest, indicating surface treatment on sapphire substrate preparation may improve ZnO thin films crystal quality and photoluminescent property.

  12. Low-relaxation spin waves in laser-molecular-beam epitaxy grown nanosized yttrium iron garnet films

    Science.gov (United States)

    Lutsev, L. V.; Korovin, A. M.; Bursian, V. E.; Gastev, S. V.; Fedorov, V. V.; Suturin, S. M.; Sokolov, N. S.

    2016-05-01

    Synthesis of nanosized yttrium iron garnet (Y3Fe5O12, YIG) films followed by the study of ferromagnetic resonance (FMR) and spin wave propagation in these films is reported. The YIG films were grown on gadolinium gallium garnet substrates by laser molecular beam epitaxy. It has been shown that spin waves propagating in YIG deposited at 700 °C have low damping. At the frequency of 3.29 GHz, the spin-wave damping parameter is less than 3.6 × 10-5. Magnetic inhomogeneities of the YIG films give the main contribution to the FMR linewidth. The contribution of the relaxation processes to the FMR linewidth is as low as 1.2%.

  13. Band gap energy and bowing parameter of In-rich InAlN films grown by magnetron sputtering

    International Nuclear Information System (INIS)

    The crystal structure, band gap energy and bowing parameter of In-rich InxAl1-xN (0.7 xAl1-xN films were obtained from absorption spectra. Band gap tailing due to compositional fluctuation in the films was observed. The band gap of the as-grown InN measured by optical absorption method is 1.34 eV, which is larger than the reported 0.7 eV for pure InN prepared by molecular beam epitaxy (MBE) method. This could be explained by the Burstein-Moss effect under carrier concentration of 1020 cm-3 of our sputtered films. The bowing parameter of 3.68 eV is obtained for our InxAl1-xN film which is consistent with the previous experimental reports and theoretical calculations.

  14. Characterization of Al2O3 Thin Films on GaAs Substrate Grown by Atomic Layer Deposition

    Institute of Scientific and Technical Information of China (English)

    LU Hong-Liang; LI Yan-Bo; XU Min; DING Shi-Jin; SUN Liang; ZHANG Wei; WANG Li-Kang

    2006-01-01

    @@ Al2O3 thin films are grown by atomic layer deposition on GaAs substrates at 300℃. The structural properties of the Al2O3 thin film and the Al2O3/GaAs interface are characterized using x-ray diffraction (XRD), highresolution transmission electron microscopy (HRTEM), and x-ray photoelectron spectroscopy (XPS). The XRD results show that the as-deposited Al2O3 film is amorphous. For 30 atomic layer deposition growth cycles, the thicknesses of the Al2O3 thin film and the interface layer from the HRTEM are 3.3nm and 0.5nm, respectively.XPS analyses reveal that the Al2O3/GaAs interface is almost free from As2O3.

  15. Luminescence properties of lanthanide and ytterbium lanthanide titanate thin films grown by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Hansen, Per-Anders, E-mail: p.a.hansen@kjemi.uio.no; Fjellvåg, Helmer; Nilsen, Ola [Department of Chemistry, Centre for Materials Science and Nanotechnology, University of Oslo, Sem Sælandsvei 26, 0371 Oslo (Norway); Finstad, Terje G. [Department of Physics, Centre for Materials Science and Nanotechnology, University of Oslo, Sem Sælandsvei 24, 0371 Oslo (Norway)

    2016-01-15

    Lanthanide based luminescent materials are highly suitable as down conversion materials in combination with a UV-absorbing host material. The authors have used TiO{sub 2} as the UV-absorbing host material and investigated the energy transfer between TiO{sub 2} and 11 different lanthanide ions, Ln{sup 3+} (Ln = La, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, Yb) in thin films grown by atomic layer deposition. They have also investigated the possibility to improve the overall energy transfer from TiO{sub 2} to Yb{sup 3+} with a second Ln{sup 3+}, in order to enhance down conversion. The films were grown at a substrate temperature of 300 °C, using the Ln(thd){sub 3}/O{sub 3} (thd = 2,2,6,6-tetramethyl-3,5-heptanedione) and TiCl{sub 4}/H{sub 2}O precursor pairs. The focus of the work is to explore the energy transfer from TiO{sub 2} to Ln{sup 3+} ions, and the energy transfer between Ln{sup 3+} and Yb{sup 3+} ions, which could lead to efficient down conversion. The samples have been characterized by x-ray diffraction, x-ray fluorescence, spectroscopic ellipsometry, and photoluminescence. All films were amorphous as deposited, and the samples have been annealed at 600, 800, and 1000 °C in order to investigate the correlation between the crystallinity and luminescence. The lanthanum titanium oxide samples showed a weak and broad emission centered at 540 nm, which was absent in all the other samples, indicating energy transfer from TiO{sub 2} to Ln{sup 3+} in all other lanthanide samples. In the amorphous phase, all samples, apart from La, Tb, and Tm, showed a typical f-f emission when excited by a 325 nm HeCd laser. None of the samples showed any luminescence after annealing at 1000 °C due to the formation of Ln{sub 2}Ti{sub 2}O{sub 7}. Samples containing Nd, Sm, and Eu show a change in emission spectrum when annealed at 800 °C compared to the as-deposited samples, indicating that the smaller lanthanides crystallize in a different manner than the larger

  16. Structural, morphological and optical characterizations of ZnO:Al thin films grown on silicon substrates by pulsed laser deposition

    Science.gov (United States)

    Alyamani, A.; Sayari, A.; Albadri, A.; Albrithen, H.; El Mir, L.

    2016-09-01

    The pulsed laser deposition (PLD) technique is used to grow Al-doped ZnO (AZO) thin films at 500 ° C on silicon substrates under vacuum or oxygen gas background from ablating AZO nanoparticle targets synthesized via the sol-gel process. The structural, morphological and optical properties were characterized by using X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), atomic force microscopy (AFM) and spectroscopic ellipsometry (SE) techniques. XRD and TEM images show that AZO powder has a wurtzite-type structure and is composed of small prismatic-like shape nanoparticles with an average size of 30nm. The structural properties of the AZO films grown under oxygen show no significant changes compared to those of the film grown under vacuum. However, the optical properties show a dependence on the growth conditions of the AZO films. Highly c -axis-oriented AZO thin films were obtained with grain size ˜ 15 nm. The stress in the AZO films is tensile as measured from the c -parameter. The dielectric function, the refractive index and the extinction coefficient as a function of the photon energy for the AZO films were determined by using spectroscopic ellipsometry measurements in the photon energy region from 1 to 6eV. The band gap energy was observed to slightly decrease in the presence of the O2 gas background and this may be attributed to the stress. The surface and volume energy loss functions are calculated and exhibit different behaviors in the energy range 1-6eV. Refractive indices of 1.9-2.1 in the visible region were obtained for the AZO films. Also, the electronic carrier concentration appears to be related to the presence of O2 during the growth process.

  17. Orientation and morphology of chloroaluminum phthalocyanine films grown by vapor deposition: Electrical field-induced molecular alignment

    Energy Technology Data Exchange (ETDEWEB)

    Basova, Tamara V., E-mail: basova@niic.nsc.ru [Nikolaev Institute of Inorganic Chemistry, 3 Lavrentiev Ave., Novosibirsk 630090 (Russian Federation); Kiselev, Vitaly G., E-mail: vitaly.kiselev@kinetics.nsc.ru [Institute of Chemical Kinetics and Combustion, 3 Institutskaya Str., Novosibirsk 630090 (Russian Federation); Novosibirsk State University, 2 Pirogova Str., Novosibirsk 630090 (Russian Federation); Plyashkevich, Vladimir A. [Nikolaev Institute of Inorganic Chemistry, 3 Lavrentiev Ave., Novosibirsk 630090 (Russian Federation); Cheblakov, Pavel B. [Institute of Chemical Kinetics and Combustion, 3 Institutskaya Str., Novosibirsk 630090 (Russian Federation); Novosibirsk State University, 2 Pirogova Str., Novosibirsk 630090 (Russian Federation); Latteyer, Florian; Peisert, Heiko; Chasse, Thomas [Institute of Physical and Theoretical Chemistry, University of Tuebingen, D-72074 Tubingen (Germany)

    2011-02-28

    Graphical abstract: The external electric field applied during the physical vapor deposition process of thin chloroaluminum(III) phthalocyanine films modified noticeably the molecular orientation and the surface morphology of the films. These effects were studied by combining both experimental (polarized Raman spectroscopy and atomic force microscopy) and theoretical (quantum chemical calculations) techniques. Research highlights: {yields} The electric field was applied during the PVD of thin AlClPc films. {yields} The electric field of 1.4 kV mm{sup -1} modified the film structure noticeably. {yields} Tilt angles of the molecules were measured using polarised Raman spectroscopy. {yields} Assignments in vibrational spectra were performed using DFT computations. - Abstract: The electric field influence on the molecular orientation and the surface morphology of the chloroaluminum(III) phthalocyanine (AlClPc) films has been studied using polarization dependent Raman spectroscopy and atomic force microscopy. The experimental studies were supported by DFT quantum chemical computations of the AlClPc vibrational spectra and {sup 15}N isotopic shifts. The electric field of 1.4 kV mm{sup -1} applied parallel to the substrate plane during the physical vapour deposition modified the film structure noticeable. The AlClPc molecules were aligned nearly perpendicular to the substrate surface (the mean tilt angle increased to {approx}80 deg. from {approx}20 deg. in the films grown without the electric field). The AFM images of the AlClPc films grown in the absence of electric field revealed a predominant amount of crystallites of polyhedron shape, whereas in the case of the applied electric field the surface was more ordered and consisted of the crystallites of a smoother shape.

  18. Orientation and morphology of chloroaluminum phthalocyanine films grown by vapor deposition: Electrical field-induced molecular alignment

    International Nuclear Information System (INIS)

    Graphical abstract: The external electric field applied during the physical vapor deposition process of thin chloroaluminum(III) phthalocyanine films modified noticeably the molecular orientation and the surface morphology of the films. These effects were studied by combining both experimental (polarized Raman spectroscopy and atomic force microscopy) and theoretical (quantum chemical calculations) techniques. Research highlights: → The electric field was applied during the PVD of thin AlClPc films. → The electric field of 1.4 kV mm-1 modified the film structure noticeably. → Tilt angles of the molecules were measured using polarised Raman spectroscopy. → Assignments in vibrational spectra were performed using DFT computations. - Abstract: The electric field influence on the molecular orientation and the surface morphology of the chloroaluminum(III) phthalocyanine (AlClPc) films has been studied using polarization dependent Raman spectroscopy and atomic force microscopy. The experimental studies were supported by DFT quantum chemical computations of the AlClPc vibrational spectra and 15N isotopic shifts. The electric field of 1.4 kV mm-1 applied parallel to the substrate plane during the physical vapour deposition modified the film structure noticeable. The AlClPc molecules were aligned nearly perpendicular to the substrate surface (the mean tilt angle increased to ∼80 deg. from ∼20 deg. in the films grown without the electric field). The AFM images of the AlClPc films grown in the absence of electric field revealed a predominant amount of crystallites of polyhedron shape, whereas in the case of the applied electric field the surface was more ordered and consisted of the crystallites of a smoother shape.

  19. Effect of substrate temperature on the texture of MgO films grown by ion beam assisted deposition

    International Nuclear Information System (INIS)

    In this paper, the role of substrate temperature in the crystalline texture of MgO films grown by ion beam assisted deposition (IBAD) is investigated. This study reveals that the best in-plane alignment for MgO films grown on Y2O3/Si is obtained at ∼25 deg. C. At this temperature, MgO films with an in-plane orientation distribution as low as 3.70 full width at half maximum (FWHM) have been attained. MgO films deposited at temperatures higher than 100 deg. C have broad in-plane alignment. Although the deposition at the lowest temperature (-150 deg. C) did not improve the in-plane texture, the acceptable deviation from the optimum ion to molecule ratio for achieving biaxially textured films was the largest. As a trend, the acceptable ion to molecule deviation decreases with increasing substrate temperature. This study is especially important for continuous IBAD MgO depositions where less restrictive conditions are desired

  20. Effect of substrate temperature on the texture of MgO films grown by ion beam assisted deposition

    Energy Technology Data Exchange (ETDEWEB)

    Stan, Liliana; Arendt, Paul N; DePaula, Raymond F; Usov, Igor O; Groves, James R [Superconductivity Technology Center, Los Alamos National Laboratory, Los Alamos, NM 87545 (United States)

    2006-04-15

    In this paper, the role of substrate temperature in the crystalline texture of MgO films grown by ion beam assisted deposition (IBAD) is investigated. This study reveals that the best in-plane alignment for MgO films grown on Y{sub 2}O{sub 3}/Si is obtained at {approx}25 deg. C. At this temperature, MgO films with an in-plane orientation distribution as low as 3.7{sup 0} full width at half maximum (FWHM) have been attained. MgO films deposited at temperatures higher than 100 deg. C have broad in-plane alignment. Although the deposition at the lowest temperature (-150 deg. C) did not improve the in-plane texture, the acceptable deviation from the optimum ion to molecule ratio for achieving biaxially textured films was the largest. As a trend, the acceptable ion to molecule deviation decreases with increasing substrate temperature. This study is especially important for continuous IBAD MgO depositions where less restrictive conditions are desired.

  1. Thermally grown oxide films and corrosion performance of ferritic stainless steels under simulated exhaust gas condensate conditions

    International Nuclear Information System (INIS)

    Highlights: • Five ferritic stainless steels with dissimilar composition included. • Thermal oxide films and performance under exhaust gas condensate conditions studied. • Oxide films grown at 300 and 600 °C show differences in structure and properties. • Performance of alloys with >11.5 wt.% Cr is related to elements Ti, Si, Nb and Mo. • Compositional optimization requires knowledge on several linked processes. - Abstract: Five ferritic stainless steels are characterized in terms of thermally grown oxide films and corrosion performance under simulated exhaust gas condensate conditions. Oxide films developed at 300 °C show only little variation in microstructure and properties between the alloys, whereas those evolved at 600 °C exhibit clear differences. Especially in alloys with >11.5 wt.% chromium, the presence and distribution of such alloying elements as titanium, silicon, niobium and molybdenum are crucial for the film properties and the overall corrosion performance. The results may be exploited in the compositional optimization of the alloys for the cold-end components of automotive exhaust system

  2. Microstructure and polarity of epitaxial ZnO films grown on LSAT(111) substrate studied by transmission electron microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Liu Yuzi [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 (China)]. E-mail: yzliu@blem.ac.cn; Ying, M.J. [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 (China); Du, X.L. [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 (China)]. E-mail: xldu@aphy.iphy.ac.cn; Zeng, Z.Q. [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 (China); Mei, Z.X. [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 (China); Jia, J.F. [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 (China); Xue, Q.K. [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 (China); Zhang, Z. [Beijing University of Technology, 100 Pingle Yuan, Chao Yang District, Beijing 100022 (China)

    2005-05-30

    Transmission electron microscopy is used to investigate the structural characteristics of epitaxial ZnO thin films grown on (LaAlO{sub 3}){sub 0.3}(Sr{sub 0.5}Ta{sub 0.5}O{sub 3}){sub 0.7}(111) (LSAT) by rf plasma-assisted molecular beam epitaxy. It is found that the growth temperature plays a key role in the formation of microstructures in ZnO film. Growth temperature dependence of rotation domain, interface and dislocation structures is studied, and the mechanism for polarity selection is discussed.

  3. Surface structure determinations of crystalline ionic thin films grown on transition metal single crystal surfaces by low energy electron diffraction

    Energy Technology Data Exchange (ETDEWEB)

    Roberts, J.G.

    2000-05-01

    The surface structures of NaCl(100), LiF(100) and alpha-MgCl2(0001) adsorbed on various metal single crystals have been determined by low energy electron diffraction (LEED). Thin films of these salts were grown on metal substrates by exposing the heated metal surface to a molecular flux of salt emitted from a Knudsen cell. This method of investigating thin films of insulators (ionic salts) on a conducting substrate (metal) circumvents surface charging problems that plagued bulk studies, thereby allowing the use of electron-based techniques to characterize the surface.

  4. Deposition temperature dependence of the deep defect density for a-Si:H films grown by electron cyclotron resonance microwave plasma

    Science.gov (United States)

    Essick, J. M.; Pool, F. S.; Shing, Y. H.

    1992-01-01

    The dependence on deposition temperature of the mobility gap density of states has been determined for hydrogenated amorphous silicon (a-Si:H) films grown by electron cyclotron resonance (ECR) microwave plasma CVD. A minimum in the integrated deep defect density of 1 x 10 exp 16/cu cm was found to occur at a temperature of approximately 250 C, while an Urbach slope minimum of 52 meV was observed at 175 C under our deposition conditions. Based on these measurements the ECR-grown films were found to be of excellent device quality and comparable to a-Si:H films grown by RF plasma-enhanced CVD.

  5. Electrical and Optical Studies of Defect Structure of HgCdTe Films Grown by Molecular Beam Epitaxy

    Science.gov (United States)

    Świątek, Z.; Ozga, P.; Izhnin, I. I.; Fitsych, E. I.; Voitsekhovskii, A. V.; Korotaev, A. G.; Mynbaev, K. D.; Varavin, V. S.; Dvoretsky, S. A.; Mikhailov, N. N.; Yakushev, M. V.; Bonchyk, A. Yu.; Savytsky, H. V.

    2016-07-01

    Electrical and optical studies of defect structure of HgCdTe films grown by molecular beam epitaxy (MBE) are performed. It is shown that the peculiarity of these films is the presence of neutral defects formed at the growth stage and inherent to the material grown by MBE. It is assumed that these neutral defects are the Te nanocomplexes. Under ion milling, they are activated by mercury interstitials and form the donor centers with the concentration of 1017 cm-3, which makes it possible to detect such defects by measurements of electrical parameters of the material. Under doping of HgCdTe with arsenic using high temperature cracking, the As2 dimers are present in the arsenic flow and block the neutral Te nanocomplexes to form donor As2Te3 complexes. The results of electrical studies are compared with the results of studies carried out by micro-Raman spectroscopy.

  6. Enhancement of supercapacitance property of electrochemically deposited MnO2 thin films grown in acidic medium

    Science.gov (United States)

    Jana, S. K.; Rao, V. P.; Banerjee, S.

    2014-02-01

    In this communication we present supercapacitance property of MnO2 thin-films which are fabricated on stainless steel (SS) substrate by electro-deposition method carried out in different pH of the electrolyte. A significant improvement of the device performance of acid mediated grown (AMG) MnO2 over normal MnO2 (grown in neutral medium) has been achieved. We have also investigated role of interfacial structure on the internal resistance of the device material. AMG MnO2 film exhibits superior device performance with specific capacitance of 652 F/g which is 2 times better than that obtained in normal MnO2 and also energy density of 90.69 Wh/kg.

  7. How do vapor grown carbon nanofibers nucleate and grow from deoiled asphalt?

    International Nuclear Information System (INIS)

    Research highlights: → A modified growth mechanism of carbon nanofibers was proposed. → Growth process includes (1) pyrolysis and aggregation, (2) nucleation, coalescence and self-assembly and (3) deveplopment and maturation. → The nucleation and rearrangement of graphitic layers depend on the crystal orientation of the metal nanoparticles. - Abstract: During the experiments aimed at understanding the evolution mechanism by which vapor grown carbon nanofibers (VGCNFs) nucleate and grow, a series of carbon nanomaterials were synthesized by chemical vapor deposition (CVD) using deoiled asphalt (DOA) as carbon source and ferrocene as catalyst precursor with an experimental strategy developed to quench the CVD at different deposition times (3-30 min). The morphology and microstructure of the products were investigated by field emission scanning electron microscope, high resolution transmission electron microscope and X-ray powder diffractometer. The formation of hollow/metal-encapsulating carbon nanoparticles at short deposition time (3 min) of CVD and the subsequent evolution of these nanoparticles into carbon nanotubes/nanofibers at longer deposition time suggest a multi-step growth model for VGCNFs, which includes the stages of (1) pyrolysis and aggregation, (2) nucleation, coalescence and self-assembly, and (3) development and maturation. At first, C, Fe and Fe/C clusters are produced by decomposition and agglomeration of C and Fe species from the pyrolysis of DOA and ferrocene; second, the carbon nanoparticles are self-assembled into nanowires with dispersive metal nanoparticles, which are further developed into nanotubes for structural stability and minimum surface energy, meanwhile fishbone-like CNFs might be formed by rearranging carbon layers at an angle against the tube axis under the nucleation of small graphitic layers on certain crystal orientation of the metal particles; finally, CNFs are formed by the synergistic action of metal catalysis and

  8. Characterization of titanium thin films anodically grown in phosphoric acid; Caracterisation des films d'oxyde de titane obtenus anodiquement dans l'acide phosphorique

    Energy Technology Data Exchange (ETDEWEB)

    Khadiri, M.E.; Benyaich [Faculte des Sciences Semlalia, Lab. d' Electrochimie et Chimie Analytique, Marakech (Morocco); Oueriagli, A.; Outzourhit, A.; Ameziane, E.L. [Faculte des Sciences Semlalia, Lab. de Physique du Solide et des Couches Minces, Marakech (Morocco)

    2004-08-01

    Ti-Cu(2%) alloy was anodized in a 5 M phosphoric acid solution under various voltages ranging from 10 to 35 V. The composition, the structural and optical properties of the as-grown oxide films were studied. It was found that the color of the anodized substrates varied from yellow to blue depending on the anodizing voltage. The films formed on the alloy are amorphous and the oxidation state of Ti on their surface is mainly +4. On the other hand it was found that the thickness of the films increases linearly with anodization voltage at rate of 1.94 nm/V, while the refractive index at the wavelength corresponding to the reflectance minimum was practically constant. These films were also found to have excellent protective properties for the examined alloy. (authors)

  9. Co2FeAl Heusler thin films grown on Si and MgO substrates: Annealing temperature effect

    Science.gov (United States)

    Belmeguenai, M.; Tuzcuoglu, H.; Gabor, M. S.; Petrisor, T.; Tiusan, C.; Zighem, F.; Chérif, S. M.; Moch, P.

    2014-01-01

    10 nm and 50 nm Co2FeAl (CFA) thin films have been deposited on MgO(001) and Si(001) substrates by magnetron sputtering and annealed at different temperatures. X-rays diffraction revealed polycrystalline or epitaxial growth (according to CFA(001)[110]//MgO(001)[100] epitaxial relation) for CFA films grown on a Si and on a MgO substrate, respectively. For these later, the chemical order varies from the A2 phase to the B2 phase when increasing the annealing temperature (Ta), while only the A2 disorder type has been observed for CFA grown on Si. Microstrip ferromagnetic resonance (MS-FMR) measurements revealed that the in-plane anisotropy results from the superposition of a uniaxial and a fourfold symmetry term for CFA grown on MgO substrates. This fourfold anisotropy, which disappears completely for samples grown on Si, is in accord with the crystal structure of the samples. The fourfold anisotropy field decreases when increasing Ta, while the uniaxial anisotropy field is nearly unaffected by Ta within the investigated range. The MS-FMR data also allow for concluding that the gyromagnetic factor remains constant and that the exchange stiffness constant increases with Ta. Finally, the FMR linewidth decreases when increasing Ta, due to the enhancement of the chemical order. We derive a very low intrinsic damping parameter (1.1×10-3 and 1.3×10-3 for films of 50 nm thickness annealed at 615 °C grown on MgO and on Si, respectively).

  10. Conductive porous carbon film as a lithium metal storage medium

    International Nuclear Information System (INIS)

    Highlights: • Conductive porous carbon films were prepared by distributing amorphous carbon nanoparticles. • The porous film provides enough conductive surfaces and reduces the effective current density. • By using the film, dendritic Li growth can be effectively prevented. • The use of the porous framework can be extended for use in other 3D structured materials for efficient Li metal storage. - Abstract: The Li metal anode boasts attractive electrochemical characteristics for use in rechargeable Li batteries, such as a high theoretical capacity and a low redox potential. However, poor cycle efficiency and safety problems relating to dendritic Li growth during cycling should be addressed. Here we propose a strategy to increase the coulombic efficiency of the Li metal electrode. Conductive porous carbon films (CPCFs) were prepared by distributing amorphous carbon nanoparticles within a polymer binder. This porous structure is able to provide enough conductive surfaces for Li deposition and dissolution, which reduce the effective current density. Moreover, the pores in these films enable the electrolyte to easily penetrate into the empty space, and Li can be densely deposited between the carbon particles. As a result, dendritic Li growth can be effectively prevented. Electrochemical tests demonstrate that the coulombic efficiency of the porous electrode can be greatly improved compared to that of the pure Cu electrode. By allowing for the development of robust Li metal electrodes, this approach provides key insight into the design of high-capacity anodes for Li metal batteries, such as Li-air and Li-S systems

  11. Dielectric and Structural Properties of SrTiO_3 Thin Films Grown by Laser Molecular Beam Epitaxy

    Institute of Scientific and Technical Information of China (English)

    2005-01-01

    Dielectric and Structural Properties of SrTiO_3 Thin Films Grown by Laser Molecular Beam Epitaxy[1]Hao J H,Gao J,Wang Z,et al.Interface structure and phase of epitaxial SrTi O3(110)thin fil ms grown directly on silicon[J].Appl Phys Lett,2005,87:131908. [2]Hao J H,Gao J,Wang HK.SrTi O3(110)thin fil ms grown directly on different oriented silicon substrates[J].Appl Phys A,2005,81:1233. [3]Aki mov I A,Sirenko A A,Clark A M,et al.Electric-field-induced soft-mode hardening in SrTi O3fil ms[J].Phys Rev Lett...

  12. Dislocation Behavior in AlGaN/GaN Multiple Quantum-Well Films Grown with Different Interlayers

    International Nuclear Information System (INIS)

    Dislocation behaviors are analyzed in AlGaN/GaN multiple-quantum-well films grown with different strain-modified interlayers. In the case of multiple-quantum-well layers grown on a GaN buffer layer without the interlayer, many threading dislocations interact and annihilate within about 100 nm below the multiple quantum well layer. For multiple-quantum-well layers grown with the AlGaN interlayer, misfit dislocations between the GaN buffer layer and the AlGaN interlayer enter multiple-quantum-well layers and result in an increase of threading dislocation density. Besides misfit dislocations, the edge-type dislocation is another dislocation origin attributed to the dissociation of Shockley partials bounding the stacking fault in AlN/GaN superlattices below the interlayer interface

  13. Spatially resolved localized vibrational mode spectroscopy of carbon in liquid encapsulated Czochralski grown gallium arsenide wafers

    International Nuclear Information System (INIS)

    Substitutional carbon on an arsenic lattice site is the shallowest and one of the most dominant acceptors in semi-insulating Liquid Encapsulated Czochralski (LEC) GaAs. However, the role of this acceptor in determining the well known ''W'' shape spatial variation of neutral EL2 concentration along the diameter of a LEC wafer is not known. In this thesis, we attempt to clarify the issue of the carbon acceptor's effect on this ''W'' shaped variation by measuring spatial profiles of this acceptor along the radius of three different as-grown LEC GaAs wafers. With localized vibrational mode absorption spectroscopy, we find that the profile of the carbon acceptor is relatively constant along the radius of each wafer. Average values of concentration are 8 x 10E15 cm-3, 1.1 x 10E15 cm-3, and 2.2 x 10E15 cm-3, respectively. In addition, these carbon acceptor LVM measurements indicate that a residual donor with concentration comparable to carbon exists in these wafers and it is a good candidate for the observed neutral EL2 concentration variation. 22 refs., 39 figs

  14. Nanostructured Pt–CeO2 thin film catalyst grown on graphite foil by magnetron sputtering

    International Nuclear Information System (INIS)

    Layers of different thickness of CeO2 doped by Pt were prepared by magnetron sputtering on different substrates: Si (1 0 0) and a graphite foil. The structure and chemical composition of the Pt–CeO2 catalysts have been investigated by scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS) and hard X-ray photoelectron spectroscopy (HAXPES). SEM showed that the layers prepared on different substrates had very different morphology. XPS and HAXPES studies demonstrated that Pt was dispersed only in Pt2+ and Pt4+ oxidation states in CeO2. Intensity of Pt2+- and Pt4+-peaks was affected by the plasma substrate interaction effects showing that carbon substrate played an active role by determining the film structure. The Pt2+/Pt4+ and Ce3+/Ce4+ ratios depend on the layer thickness and increases in the case of the graphite substrate. The reduced character of porous layer was explained by a general effect of formation of defects and oxygen vacancies at oxide edges and steps, and oxygen reaction with carbon which is responsible of formation of oxygen deficient cerium oxide at the interface.

  15. Nanogenerators consisting of direct-grown piezoelectrics on multi-walled carbon nanotubes using flexoelectric effects

    Science.gov (United States)

    Han, Jin Kyu; Jeon, Do Hyun; Cho, Sam Yeon; Kang, Sin Wook; Yang, Sun A.; Bu, Sang Don; Myung, Sung; Lim, Jongsun; Choi, Moonkang; Lee, Minbaek; Lee, Min Ku

    2016-07-01

    We report the first attempt to prepare a flexoelectric nanogenerator consisting of direct-grown piezoelectrics on multi-walled carbon nanotubes (mwCNT). Direct-grown piezoelectrics on mwCNTs are formed by a stirring and heating method using a Pb(Zr0.52Ti0.48)O3 (PZT)-mwCNT precursor solution. We studied the unit cell mismatch and strain distribution of epitaxial PZT nanoparticles, and found that lattice strain is relaxed along the growth direction. A PZT-mwCNT nanogenerator was found to produce a peak output voltage of 8.6 V and an output current of 47 nA when a force of 20 N is applied. Direct-grown piezoelectric nanogenerators generate a higher voltage and current than simple mixtures of PZT and CNTs resulting from the stronger connection between PZT crystals and mwCNTs and an enhanced flexoelectric effect caused by the strain gradient. These experiments represent a significant step toward the application of nanogenerators using piezoelectric nanocomposite materials.

  16. Hydroxyapatite growth on multiwall carbon nanotubes grown on titanium fibers from a titanium sheet

    KAUST Repository

    Chetibi, Loubna

    2013-09-27

    Nano-hydroxyapatite (HA) was grown on functionalized multiwalled carbon nanotubes (MWCNTs) deposited on TiO2 nanofibers (NFs) that were hydrothermally grown on Ti metal sheets. The HA was electrochemically grown on the MWCNTs/TiO2 porous layer. It was found that the HA grows on the MWCNTs/TiO2 NFs in the form of dense coating with nanorice grain-shaped. The incorporation of MWCNTs between HA and TiO2 NFs has led to higher adhesion strength as measured by micro-scratching test indicating the benefit of MWCNTs on the improving the bonding strength of HA layer. The obtained coatings exhibit excellent corrosion resistance in simulated body fluid. It is expected that this simple route for preparing the new HA/MWCNTs/TiO2/Ti-layered structure might be used not only in the biomedical field, but also in catalysis and biological sensing among others. © 2013 Springer Science+Business Media New York.

  17. Substrate dependent structural, optical and electrical properties of ZnS thin films grown by RF sputtering

    Science.gov (United States)

    Pathak, Trilok K.; Kumar, Vinod; Purohit, L. P.; Swart, H. C.; Kroon, R. E.

    2016-10-01

    Zinc sulphide (ZnS) films are of great importance for applications in various optoelectronic devices. ZnS thin films were grown on glass, indium tin oxide (ITO) and Corning glass substrates by radio-frequency magnetron sputtering at a temperature of 373 K and a comparative study of the structural, optical and electrical properties was performed using X-ray diffraction (XRD), scanning electron microscopy, optical and current-voltage (I-V) measurements. The XRD patterns showed that the sputtered thin films exhibited good crystallinity with the (111) peak around 2θ=28.3° indicating preferential orientation of the cubic structure. The maximum strain and most densely packed grains were obtained for the Corning glass substrate. The transmittance spectra of the films were measured in the wavelength range from 200 to 800 nm, showing that the films are about 77% transparent in the visible region. A slight change of 3.50 eV to 3.54 eV was found for the bandgap of the films deposited on different substrates. The ZnS thin films deposited on Corning glass show better crystallinity, morphology and I-V characteristics than that deposited on ordinary glass and ITO substrates.

  18. Electric Characteristics of the Carbon Nanotube Network Transistor with Directly Grown ZnO Nanoparticles.

    Science.gov (United States)

    Kim, Un Jeong; Bae, Gi Yoon; Suh, Dong Ik; Park, Wanjun

    2016-03-01

    We report on the electrical characteristics of field effect transistors fabricated with random networks of single-walled carbon nanotubes with surfaces modified by ZnO nanoparticles. ZnO nanoparticles are directly grown on single-walled carbon nanotubes by atomic layer deposition using diethylzinc (DEZ) and water. Electrical observations show that ZnO nanoparticles act as charge transfer sources that provide electrons to the nanotube channel. The valley position in ambipolar transport of nanotube transistors is negatively shifted for 3V due to the electronic n-typed property of ZnO nanoparticles. However, the Raman resonance remains invariant despite the charge transfer effect produced by ZnO nanoparticles. PMID:27455727

  19. Dissolved inorganic carbon enhanced growth, nutrient uptake, and lipid accumulation in wastewater grown microalgal biofilms.

    Science.gov (United States)

    Kesaano, Maureen; Gardner, Robert D; Moll, Karen; Lauchnor, Ellen; Gerlach, Robin; Peyton, Brent M; Sims, Ronald C

    2015-03-01

    Microalgal biofilms grown to evaluate potential nutrient removal options for wastewaters and feedstock for biofuels production were studied to determine the influence of bicarbonate amendment on their growth, nutrient uptake capacity, and lipid accumulation after nitrogen starvation. No significant differences in growth rates, nutrient removal, or lipid accumulation were observed in the algal biofilms with or without bicarbonate amendment. The biofilms possibly did not experience carbon-limited conditions because of the large reservoir of dissolved inorganic carbon in the medium. However, an increase in photosynthetic rates was observed in algal biofilms amended with bicarbonate. The influence of bicarbonate on photosynthetic and respiration rates was especially noticeable in biofilms that experienced nitrogen stress. Medium nitrogen depletion was not a suitable stimulant for lipid production in the algal biofilms and as such, focus should be directed toward optimizing growth and biomass productivities to compensate for the low lipid yields and increase nutrient uptake.

  20. Electric Characteristics of the Carbon Nanotube Network Transistor with Directly Grown ZnO Nanoparticles.

    Science.gov (United States)

    Kim, Un Jeong; Bae, Gi Yoon; Suh, Dong Ik; Park, Wanjun

    2016-03-01

    We report on the electrical characteristics of field effect transistors fabricated with random networks of single-walled carbon nanotubes with surfaces modified by ZnO nanoparticles. ZnO nanoparticles are directly grown on single-walled carbon nanotubes by atomic layer deposition using diethylzinc (DEZ) and water. Electrical observations show that ZnO nanoparticles act as charge transfer sources that provide electrons to the nanotube channel. The valley position in ambipolar transport of nanotube transistors is negatively shifted for 3V due to the electronic n-typed property of ZnO nanoparticles. However, the Raman resonance remains invariant despite the charge transfer effect produced by ZnO nanoparticles.

  1. Effects of vapor grown carbon nanofibers on electrical and mechanical properties of a thermoplastic elastomer

    Science.gov (United States)

    Basaldua, Daniel Thomas

    Carbon nanofiber (CNF) reinforced composites are exceptional materials that exhibit superior properties compared to conventional composites. This paper presents the development of a vapor grown carbon nanofiber (VGCNF) thermoplastic polyurethane (TPU) composite by a melt mixing process. Dispersion and distribution of CNFs inside the TPU matrix were examined through scanning electron microscopy to determine homogeneity. The composite material underwent durometer, thermal gravimetric analysis, differential scanning calorimetry, heat transfer, hysteresis, dynamic modulus, creep, tensile, abrasion, and electrical conductivity testing to characterize its properties and predict behavior. The motivation for this research is to develop an elastomer pad that is an electrically conductive alternative to the elastomer pads currently used in railroad service. The material had to be a completely homogenous electrically conductive CNF composite that could withstand a harsh dynamically loaded environment. The new material meets mechanical and conductive requirements for use as an elastomer pad in a rail suspension.

  2. Effect of oxygen plasma on field emission characteristics of single-wall carbon nanotubes grown by plasma enhanced chemical vapour deposition system

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Avshish; Parveen, Shama; Husain, Samina; Ali, Javid; Zulfequar, Mohammad [Department of Physics, Jamia Millia Islamia (A Central University), New Delhi 110025 (India); Harsh [Centre for Nanoscience and Nanotechnology, Jamia Millia Islamia, New Delhi 110025 (India); Husain, Mushahid, E-mail: mush-reslab@rediffmail.com [Department of Physics, Jamia Millia Islamia (A Central University), New Delhi 110025 (India); Centre for Nanoscience and Nanotechnology, Jamia Millia Islamia, New Delhi 110025 (India)

    2014-02-28

    Field emission properties of single wall carbon nanotubes (SWCNTs) grown on iron catalyst film by plasma enhanced chemical vapour deposition system were studied in diode configuration. The results were analysed in the framework of Fowler-Nordheim theory. The grown SWCNTs were found to be excellent field emitters, having emission current density higher than 20 mA/cm{sup 2} at a turn-on field of 1.3 V/μm. The as grown SWCNTs were further treated with Oxygen (O{sub 2}) plasma for 5 min and again field emission characteristics were measured. The O{sub 2} plasma treated SWCNTs have shown dramatic improvement in their field emission properties with emission current density of 111 mA/cm{sup 2} at a much lower turn on field of 0.8 V/μm. The as grown as well as plasma treated SWCNTs were also characterized by various techniques, such as scanning electron microscopy, high resolution transmission electron microscopy, Raman spectroscopy, and Fourier transform infrared spectroscopy before and after O{sub 2} plasma treatment and the findings are being reported in this paper.

  3. Effect of oxygen plasma on field emission characteristics of single-wall carbon nanotubes grown by plasma enhanced chemical vapour deposition system

    Science.gov (United States)

    Kumar, Avshish; Parveen, Shama; Husain, Samina; Ali, Javid; Zulfequar, Mohammad; Harsh; Husain, Mushahid

    2014-02-01

    Field emission properties of single wall carbon nanotubes (SWCNTs) grown on iron catalyst film by plasma enhanced chemical vapour deposition system were studied in diode configuration. The results were analysed in the framework of Fowler-Nordheim theory. The grown SWCNTs were found to be excellent field emitters, having emission current density higher than 20 mA/cm2 at a turn-on field of 1.3 V/μm. The as grown SWCNTs were further treated with Oxygen (O2) plasma for 5 min and again field emission characteristics were measured. The O2 plasma treated SWCNTs have shown dramatic improvement in their field emission properties with emission current density of 111 mA/cm2 at a much lower turn on field of 0.8 V/μm. The as grown as well as plasma treated SWCNTs were also characterized by various techniques, such as scanning electron microscopy, high resolution transmission electron microscopy, Raman spectroscopy, and Fourier transform infrared spectroscopy before and after O2 plasma treatment and the findings are being reported in this paper.

  4. Deposition of calcium carbonate films by a polymer-induced liquid-precursor (PILP) process

    Science.gov (United States)

    Gower, Laurie B.; Odom, Damian J.

    2000-03-01

    A polypeptide additive has been used to transform the solution crystallization of calcium carbonate to a solidification process of a liquid-phase mineral precursor. In situ observations reveal that polyaspartate induces liquid-liquid phase separation of droplets of a mineral precursor. The droplets deposit on the substrate and coalesce to form a coating, which then solidifies into calcitic tablets and films. Transition bars form during the amorphous to crystalline transition, leading to sectorization of calcite tablets, and the defect textures and crystal morphologies are atypical of solution grown crystals. The formation of nonequilibrium crystal morphologies using an acidic polypeptide may have implications in the field of biomineralization, and the environmentally friendly aspects of this polymer-induced liquid-precursor (PILP) process may offer new techniques for aqueous-based processing of ceramic films, coatings, and particulates.

  5. Computational and experimental studies of strain sensitive carbon nanotube films

    OpenAIRE

    Bu, Lei

    2014-01-01

    The excellent electrical and mechanical properties of carbon nanotubes (CNTs) provide interesting opportunities to realize new types of strain gauges. However, there are still challenges for the further development of CNT film strain gauges, for instance the lack of design rules, the homogeneity, stability and reproducibility of CNT films. This thesis aims to address these issues from two sides: simulation and experiment. Monte Carlo simulations show that both the sheet resistance and gauge f...

  6. Quantification of oxygen and carbon in high Tc superconducting films by (α,α) elastic resonance technique

    International Nuclear Information System (INIS)

    The quantification of oxygen and carbon in high-temperature (Tc) superconducting oxide thin films was made by employing elastic resonance in He backscattering analysis. A method combining the oxygen resonance technique and channeling was presented for measuring the nature of the oxygen disorder near the surface and the interface in a YBCO superconducting film grown on an MgO substrate. The oxygen resonance technique was used to quantify the oxygen profiling in the metal/YBCO contacts, showing that Zr and Nb act as sinks to oxygen from YBCO films and are oxidized in the forms Zr/ZrO2/YBCO/MgO and Nb0.2O/YBCO/MgO after annealing in a vacuum at 350oC. We combined the carbon and oxygen resonances to determine the carbon contamination and oxygen concentration changes on the YBCO surface after coating and baking the photoresist. Residual carbon on the surface and a thin layer of oxygen depletion near the YBCO surface have been observed. The residual carbon in Bi2Sr2CaCu2O8 films made by the decomposition of metallo-organic precursors was quantified using carbon resonance. (author)

  7. Methods of Boron-carbon Deposited Film Removal

    Science.gov (United States)

    Airapetov, A.; Terentiev, V.; Voituk, A.; Zakharov, A.

    Boron carbide was proposed as a material for in-situ renewable protecting coating for tungsten tiles of the ITER divertor. It is necessary to develop a method of gasification of boron-carbon film which deposits during B4C sputtering. In this paper the results of the first stage investigation of gasification methods of boron-carbon films are presented. Two gasification methods of films are investigated: interaction with the ozone-oxygen mixture and irradiation in plasma with the working gas composed of oxygen, ethanol, and, in some cases, helium. The gasification rate in the ozone-oxygen mixture at 250 °C for B/C films with different B/C ratio and carbon fiber composite (CFC), was measured. For B/C films the gasification rate decreased with increasing B/C ratio (from 45 nm/h at B/C=0.7 to 4 nm/h at B/C=2.1; for CFC - 15 μm/h). Films gasification rates were measured under ion irradiation from ethanol-oxygen-helium plasma at different temperatures, with different ion energies and different gas mixtures. The maximum obtained removal rate was near 230 nm/h in case of ethanol-oxygen plasma and at 150°C of the sample temperature.

  8. Embedded polytypes in Bi2Sr2-xLaxCuO6 thin films grown by laser ablation

    Science.gov (United States)

    Cancellieri, C.; Lin, P. H.; Ariosa, D.; Pavuna, D.

    2007-11-01

    We investigate the presence of secondary phases in La-doped Bi-2201 thin films grown by laser ablation. The cation ratios in the target material, the oxygen pressure, and the substrate temperature during the deposition are the main parameters determining the presence of diluted intergrowth and/or polytype aggregates. A statistical model of random intergrowth is used to analyze the x-ray diffraction (XRD) anomalies caused by hidden defects and to characterize the latter. A detailed structural XRD refinement on oriented aggregates allows us to identify the guest phase as a Bi deficient phase, Bi-1201. The occurrence of this particular embedded polytype is accompanied by a global Bi deficiency introduced in the films by the growing process and/or by the annealing treatment. The presence of La favors the Bi-1201 formation mostly as La-rich c -axis oriented aggregates. Bi excess in the target material improves considerably the crystallographic structure of Bi-2201, avoids intergrowth formation, but does not prevent the phase separation of Bi-1201 in La-doped thin films. We also investigate the influence of the deposition parameters on the type of intergrowth as well as their variation with La doping. This work introduces a specific methodology for optimizing the growth of thin films grown by laser ablation, which applies to layered oxides that admit polytypes with close formation enthalpies in their phase diagram.

  9. Semiconductor-insulator transition in VO{sub 2} (B) thin films grown by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Rúa, Armando; Díaz, Ramón D.; Lysenko, Sergiy; Fernández, Félix E., E-mail: felix.fernandez@upr.edu [Department of Physics, University of Puerto Rico, Mayagüez, Puerto Rico 00681-9000 (United States)

    2015-09-28

    Thin films of B-phase VO{sub 2} were grown by pulsed-laser deposition on glass and (100)-cut MgO substrates in a temperature range from 375 to 425 °C and at higher gas pressures than usual for this technique. The films were strongly oriented, with ab-planes parallel to the substrate surface. Detailed study of surface morphology through Atomic Force Microscopy images suggest significant differences in evolution as a function of growth temperature for films on the two types of substrates. Measurements of electrical conductivities through cooling-heating cycles from room temperature to 120 K showed changes of five orders of magnitude, with steeper changes between room temperature and ∼150 K, which corresponds with the extended and reversible phase transition known to occur for this material. At lower temperatures conductivities exhibited Arrhenius behavior, indicating that no further structural change was occurring and that conduction is thermally activated. In this lower temperature range, conductivity of the samples can be described by the near-neighbor hopping model. No hysteresis was found between the cooling and heating braches of the cycles, which is at variance with previous results published for VO{sub 2} (B). This apparent lack of hysteresis for thin films grown in the manner described and the large conductivity variation as a function of temperature observed for the samples suggests this material could be of interest for infrared sensing applications.

  10. Infrared analysis of thin films amorphous, hydrogenated carbon on silicon

    CERN Document Server

    Jacob, W; Schwarz-Selinger, T

    2000-01-01

    The infrared analysis of thin films on a thick substrate is discussed using the example of plasma-deposited, amorphous, hydrogenated carbon layers (a-C:H) on silicon substrates. The framework for the optical analysis of thin films is presented. The main characteristic of thin film optics is the occurrence of interference effects due to the coherent superposition of light multiply reflected at the various internal and external interfaces of the optical system. These interference effects lead to a sinusoidal variation of the transmitted and reflected intensity. As a consequence, the Lambert-Beer law is not applicable for the determination of the absorption coefficient of thin films. Furthermore, observable changes of the transmission and reflection spectra occur in the vicinity of strong absorption bands due to the Kramers-Kronig relation. For a sound data evaluation these effects have to be included in the analysis. To be able to extract the full information contained in a measured optical thin film spectrum, ...

  11. Field Emission Properties of Multi-walled Carbon Nanotubes Grown on Silicon Nanoporous Pillar Array

    Science.gov (United States)

    Jiang, Wei-fen; Li, Long-yu; Xiao, Shun-hua; Yang, Xiao-hui; Jia, Min; Li, Xin-jian

    2007-12-01

    Multi-walled carbon nanotubes (CNTs) were grown on a silicon nanoporous pillar array (Si-NPA) by thermal chemical vapor deposition. Surface morphologies and microstructure of the resultant were studied by a field emission scanning electron microscope, Raman spectrum, transmission electron microscope, and high-resolution transmission electron microscopy. The composition of samples was determined by energy dispersive X-ray spectroscopy (EDS). The results showed that a great deal of CNTs, with diameter in the range of 20-70 nm, incorporated with Si-NPA and a large scale nest array of CNTs/Si-NPA (NACNT/Si-NPA) was formed. EDS analysis showed that the composition of carbon nanotubes was carbon. Field emission measurements showed that a current density of 5 mA/cm2 was obtained at an electric field of 4.26 V/μm, with a turn-on field of 1.3 V/μm. The enhancement factor calculated according to the Fowler-Nordheim theory was ~11,000. This excellent field emission performance is attributed to the unique structure and morphology of NACNT/Si-NPA, especially the formation of a nest-shaped carbon nanotube array. A schematic drawing that illustrates the experimental configuration is given. These results indicate that NACNT/Si-NPA might be an ideal candidate cathode for potential applications in flat panel displays.

  12. Assembly and Applications of Carbon Nanotube Thin Films

    Institute of Scientific and Technical Information of China (English)

    Hongwei ZHU; Bingqing WEI

    2008-01-01

    The ultimate goal of current research on carbon nanotubes (CNTs) is to make breakthroughs that advance nanotechnological applications of bulk CNT materials. Especially, there has been growing interest in CNT thin films because of their unique and usually enhanced properties and tremendous potential as components for use in nano-electronic and nano-mechanical device applications or as structural elements in various devices. If a synthetic or a post processing method can produce high yield of nanotube thin films, these structures will provide tremendous potential for fundamental research on these devices. This review will address the synthesis, the post processing and the device applications of self-assembled nanotube thin films.

  13. Removal of Ozone by Carbon Nanotubes/Quartz Fiber Film.

    Science.gov (United States)

    Yang, Shen; Nie, Jingqi; Wei, Fei; Yang, Xudong

    2016-09-01

    Ozone is recognized as a harmful gaseous pollutant, which can lead to severe human health problems. In this study, carbon nanotubes (CNTs) were tested as a new approach for ozone removal. The CNTs/quartz fiber film was fabricated through growth of CNTs upon pure quartz fiber using chemical vapor deposition method. Ozone conversion efficiency of the CNTs/quartz fiber film was tested for 10 h and compared with that of quartz film, activated carbon (AC), and a potassium iodide (KI) solution under the same conditions. The pressure resistance of these materials under different airflow rates was also measured. The results showed that the CNTs/quartz fiber film had better ozone conversion efficiency but also higher pressure resistance than AC and the KI solution of the same weight. The ozone removal performance of the CNTs/quartz fiber film was comparable with AC at 20 times more weight. The CNTs played a dominant role in ozone removal by the CNTs/quartz fiber film. Its high ozone conversion efficiency, lightweight and free-standing properties make the CNTs/quartz fiber film applicable to ozone removal. Further investigation should be focused on reducing pressure resistance and studying the CNT mechanism for removing ozone.

  14. Positive magnetoresistance in ferromagnetic Nd-doped In2O3 thin films grown by pulse laser deposition

    KAUST Repository

    Xing, G. Z.

    2014-05-23

    We report the magnetic and magnetotransport properties of (In 0.985Nd0.015)2O2.89 thin films grown by pulse laser deposition. The clear magnetization hysteresis loops with the complementary magnetic domain structure reveal the intrinsic room temperature ferromagnetism in the as-prepared films. The strong sp-f exchange interaction as a result of the rare earth doping is discussed as the origin of the magnetotransport behaviours. A positive magnetoresistance (∼29.2%) was observed at 5 K and ascribed to the strong ferromagnetic sp-f exchange interaction in (In0.985Nd0.015)2O 2.89 thin films due to a large Zeeman splitting in an external magnetic field of 50 KOe. © 2014 AIP Publishing LLC.

  15. Thickness-Dependent Properties of YBCO Films Grown on GZO/CLO-Buffered NiW Substrates

    DEFF Research Database (Denmark)

    Malmivirta, M.; Huhtinen, H.; Yue, Zhao;

    2016-01-01

    To study the role of novel Gd2Zr2O7/Ce0.9La0.1O2 buffer layer structure on a biaxially textured NiW substrate, a set of YBa2Cu3O7−δ (YBCO) films with different thicknesses were prepared by pulsed laser deposition (PLD). Interface imperfections as well as thickness-dependent structural properties...... be successfully used for films with various thicknesses. This issue is linked to the extremely susceptible growth method of PLD when compared to the commonly used chemical deposition methods. Nevertheless, PLD-grown films can give a hint on what to concentrate to be able to further improve the buffer layer...

  16. Correlation of nanochemistry and electrical properties in HfO2 films grown by metalorganic molecular-beam epitaxy

    Science.gov (United States)

    Moon, Tae-Hyoung; Ham, Moon-Ho; Myoung, Jae-Min

    2005-03-01

    We present the annealing effects on nanochemistry and electrical properties in HfO2 dielectrics grown by metalorganic molecular-beam epitaxy. After the postannealing treatment of HfO2 films in the temperature range of 600-800°C, the thicknesses and chemical states of the films were examined by high-resolution transmission electron microscopy and angle-resolved x-ray photoelectron spectroscopy. By comparing the line shapes of core-level spectra for the samples with different annealing temperatures, the concentrations of SiO and Hf-silicate with high dielectric constant are found to be highest for HfO2 film annealed at 700°C. This result supports that the accumulation capacitance of the sample annealed at 700°C is not deteriorated in spite of a steep increase in interfacial layer thickness compared with that of the sample annealed at 600°C.

  17. Studies of zinc-blende type MnAs thin films grown on InP(001) substrates by XRD

    Science.gov (United States)

    Oomae, H.; Irizawa, S.; Jinbo, Y.; Toyota, H.; Kambayashi, T.; Uchitomi, N.

    2013-09-01

    The detailed crystalline structure of molecular beam epitaxially grown MnAs thin films on InP(001) substrate has been investigated using high resolution X-ray diffraction techniques. Reciprocal space mapping of the MnAs/InP(001) samples indicates that the MnAs has a cubic zinc-blende (zb) structure with the epitaxial relationship zb-MnAs[110]|InP[110]. The lattice constant of zb-MnAs is ˜6.06 Å. The MnAs lattice is relaxed and is mosaic-like likely due to large lattice mismatch between the film and InP substrate. The isotropic nature of the magnetic properties supported our conjecture that the MnAs epitaxial film under study has indeed a cubic structure.

  18. Epitaxially grown crystalline silicon thin-film solar cells reaching 16.5% efficiency with basic cell process

    International Nuclear Information System (INIS)

    We report about the current performance of crystalline silicon thin-film (cSiTF) solar cells that are a very attractive alternative to conventional wafer-based silicon solar cells if sufficiently high cell efficiencies are achieved at acceptable cost of production. Applying a standard cell process (diffused POCl3 emitter, front contacts by photolithography, no surface texture) to thin-films deposited with a lab-type reactor, specifically designed for high-throughput photovoltaic applications, on highly-doped Cz substrates we routinely obtain efficiencies above 16%. On 1 Ω cm FZ material substrates we reach efficiencies up to 18.0%, which is among the highest thin-film efficiencies ever reported. Additionally, a comparison to microelectronic-grade epitaxially grown cSiTF material underlines the excellent electrical quality of the epitaxial layers deposited.

  19. Oxygen Pressure Dependence of Properties of Epitaxial LaAlO3 Films Grown on Si (100)

    Institute of Scientific and Technical Information of China (English)

    XIANG Wen-Feng; LU Hui-Bin; CHEN Zheng-Hao; HE Meng; ZHOU Yue-Liang

    2005-01-01

    @@ Heteroepitaxial LaAlO3 films were grown on a SrTiO3/Si (100) substrate by laser molecular beam epitaxy under different oxygen pressures, and their properties such as crystallinity and electrical characteristics were experimentally investigated using the various measurement methods. The results show that most properties depend mainly on the deposition oxygen pressure. The crystallinity and the C-V and I-V characteristics can be greatly improved with the increasing oxygen deposition pressure. Moreover, after annealed at 1050℃ in N2 ambient, the C-V and I-V characteristics of LAO films deposited at the lower oxygen pressure are also improved due to the decrease of oxygen vacancies in LAO films.

  20. Transport and magnetotransport in PLD and CSD grown La0.5Pr0.2Sr0.3MnO3 manganite films: a comparative study

    International Nuclear Information System (INIS)

    A comparative study on the transport and magnetotransport properties of La0.5Pr0.2Sr0.3MnO3 (LPSMO) manganite films grown on single crystalline LAO substrates using Chemical Solution Deposition (CSD) and Pulsed Laser Deposition (PLD) techniques shows the dependence of TIM and MR at low temperature on the film microstructure and the strain at the film-lattice substrate in CSD and PLD grown films. The results of the XRD, AFM, ρ-T and MR measurements on CSD grown LPSMO/LAO film have been compared with those of PLD grown LPSMO/LAO film. (author)

  1. Friction of diamond-like carbon films in different atmospheres

    International Nuclear Information System (INIS)

    Diamond-like carbon (DLC) films constitute a class of new materials with a wide range of compositions, properties, and performance. In particular, the tribological properties of these films are rather intriguing and can be strongly influenced by the test conditions and environment. In this paper, we performed a series of model experiments in high vacuum and with various added gases to elucidate the influence of different test environments on the tribological behavior of three DLC films. Specifically, we studied the behavior of a hydrogen-free film produced by a cathodic arc process and two highly hydrogenated films produced by plasma-enhanced chemical-vapor deposition. Flats and balls used in our experiments were coated with DLC and tested in a pin-on-disc machine under a load of 1 N and at constant rotational frequency. With a low background pressure, in the 10(sup -6) Pa range, the highly hydrogenated films exhibited a friction coefficient of less than 0.01, whereas the hydrogen-free film gave a friction coefficient of approximately 0.6. Adding oxygen or hydrogen to the experimental environment changed the friction to some extent. However, admission of water vapor into the test chamber caused large changes: the friction coefficient decreased drastically for the hydrogen-free DLC film whereas it increased a bit for one of the highly hydrogenated films. These results indicate that water molecules play a prominent role in the frictional behavior of DLC films-most notably for hydrogen-free films but also for highly hydrogenated films

  2. Immune response and disease resistance of shrimp fed biofloc grown on different carbon sources.

    Science.gov (United States)

    Ekasari, Julie; Hanif Azhar, Muhammad; Surawidjaja, Enang H; Nuryati, Sri; De Schryver, Peter; Bossier, Peter

    2014-12-01

    The objective of this study was to document the immunological effects of growing shrimp in biofloc systems. The experiment consisted of four types of biofloc systems in which bioflocs were produced by daily supplementation of four different carbon sources, i.e. molasses, tapioca, tapioca-by-product, and rice bran, at an estimated C/N ratio of 15 and a control system without any organic carbon addition. Each biofloc system was stocked with Pacific white shrimp (Litopenaeus vannamei) juveniles that were reared for 49 days. The use of tapioca-by-product resulted in a higher survival (93%) of the shrimp as compared to the other carbon sources and the control. The highest yield and protein assimilation was observed when tapioca was used as the carbon source. After 49 days, phenoloxidase (PO) activity of the shrimp grown in all biofloc systems was higher than that of the shrimp from the control system. Following a challenge test by injection with infectious myonecrosis virus (IMNV), the levels of PO and respiratory burst (RB) activity in the shrimp of all biofloc treatments were higher than that of the challenged shrimp from the control treatment. An increased immunity was also suggested by the survival of the challenged shrimp from the experimental biofloc groups that was significantly higher as compared to the challenged shrimp from the control treatment, regardless of the organic carbon source used to grow the bioflocs. Overall, this study demonstrated that the application of biofloc technology may contribute to the robustness of cultured shrimp by immunostimulation and that this effect is independent of the type of carbon source used to grow the flocs. PMID:25218685

  3. Structural and optoelectrical properties of Ga-doped ZnO semiconductor thin films grown by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, J.; Zhong, Z.Y. [College of Electronic Information Engineering, South-Central University for Nationalities (SCUN), Wuhan (China)

    2012-09-15

    Transparent conductive gallium-doped zinc oxide (Ga-doped ZnO) films were prepared on glass substrate by magnetron sputtering. The influence of substrate temperature on structural, optoelectrical and surface properties of the films were investigated by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), spectrophotometer, four-point probe and goniometry, respectively. Experimental results show that all the films are found to be oriented along the c-axis. The grain size and optical transmittance of the films increase with increasing substrate temperature. The average transmittance in the visible wavelength range is above 83% for all the samples. It is observed that the optoelectrical property is correlated with the film structure. The Ga-doped ZnO film grown at the substrate temperature of 400 C has the highest figure of merit of 1.25 x 10{sup -2} {Omega}{sup -1}, the lowest resistivity of 1.56 x 10{sup -3} {Omega}.cm and the highest surface energy of 32.3 mJ/m{sup 2}. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  4. Thin yttrium iron garnet films grown by pulsed laser deposition: Crystal structure, static, and dynamic magnetic properties

    Energy Technology Data Exchange (ETDEWEB)

    Sokolov, N. S., E-mail: nsokolov@fl.ioffe.ru; Fedorov, V. V.; Korovin, A. M.; Suturin, S. M.; Baranov, D. A.; Gastev, S. V.; Krichevtsov, B. B.; Bursian, V. E.; Lutsev, L. V. [Ioffe Physical-Technical Institute of Russian Academy of Sciences, St. Petersburg 194021 (Russian Federation); Maksimova, K. Yu.; Grunin, A. I. [Immanuel Kant Baltic Federal University, Kaliningrad 236041 (Russian Federation); Tabuchi, M. [Synchrotron Radiation Research Center, Nagoya University, Nagoya 464-8603 (Japan)

    2016-01-14

    Pulsed laser deposition has been used to grow thin (10–84 nm) epitaxial layers of Yttrium Iron Garnet Y{sub 3}Fe{sub 5}O{sub 12} (YIG) on (111)–oriented Gadolinium Gallium Garnet substrates at different growth conditions. Atomic force microscopy showed flat surface morphology both on micrometer and nanometer scales. X-ray diffraction measurements revealed that the films are coherent with the substrate in the interface plane. The interplane distance in the [111] direction was found to be by 1.2% larger than expected for YIG stoichiometric pseudomorphic film indicating presence of rhombohedral distortion in this direction. Polar Kerr effect and ferromagnetic resonance measurements showed existence of additional magnetic anisotropy, which adds to the demagnetizing field to keep magnetization vector in the film plane. The origin of the magnetic anisotropy is related to the strain in YIG films observed by XRD. Magneto-optical Kerr effect measurements revealed important role of magnetization rotation during magnetization reversal. An unusual fine structure of microwave magnetic resonance spectra has been observed in the film grown at reduced (0.5 mTorr) oxygen pressure. Surface spin wave propagation has been demonstrated in the in-plane magnetized films.

  5. Engineering the mechanical properties of ultrabarrier films grown by atomic layer deposition for the encapsulation of printed electronics

    International Nuclear Information System (INIS)

    Direct deposition of barrier films by atomic layer deposition (ALD) onto printed electronics presents a promising method for packaging devices. Films made by ALD have been shown to possess desired ultrabarrier properties, but face challenges when directly grown onto surfaces with varying composition and topography. Challenges include differing nucleation and growth rates across the surface, stress concentrations from topography and coefficient of thermal expansion mismatch, elastic constant mismatch, and particle contamination that may impact the performance of the ALD barrier. In such cases, a polymer smoothing layer may be needed to coat the surface prior to ALD barrier film deposition. We present the impact of architecture on the performance of aluminum oxide (Al2O3)/hafnium oxide (HfO2) ALD nanolaminate barrier films deposited on fluorinated polymer layer using an optical calcium (Ca) test under damp heat. It is found that with increasing polymer thickness, the barrier films with residual tensile stress are prone to cracking resulting in rapid failure of the Ca sensor at 50 °C/85% relative humidity. Inserting a SiNx layer with residual compressive stress between the polymer and ALD layers is found to prevent cracking over a range of polymer thicknesses with more than 95% of the Ca sensor remaining after 500 h of testing. These results suggest that controlling mechanical properties and film architecture play an important role in the performance of direct deposited ALD barriers

  6. Engineering the mechanical properties of ultrabarrier films grown by atomic layer deposition for the encapsulation of printed electronics

    Energy Technology Data Exchange (ETDEWEB)

    Bulusu, A.; Singh, A.; Kim, H. [Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Wang, C. Y.; Dindar, A.; Fuentes-Hernandez, C.; Kippelen, B. [School of Electrical and Computer Engineering, Georgia Institute of Technology, and Center for Organic Photonics and Electronics, Atlanta, Georgia 30332 (United States); Cullen, D. [Oak Ridge National Laboratory, P.O. Box 2008 MS-6064, Oak Ridge, Tennessee 37831 (United States); Graham, S., E-mail: sgraham@gatech.edu [Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Oak Ridge National Laboratory, P.O. Box 2008 MS-6064, Oak Ridge, Tennessee 37831 (United States)

    2015-08-28

    Direct deposition of barrier films by atomic layer deposition (ALD) onto printed electronics presents a promising method for packaging devices. Films made by ALD have been shown to possess desired ultrabarrier properties, but face challenges when directly grown onto surfaces with varying composition and topography. Challenges include differing nucleation and growth rates across the surface, stress concentrations from topography and coefficient of thermal expansion mismatch, elastic constant mismatch, and particle contamination that may impact the performance of the ALD barrier. In such cases, a polymer smoothing layer may be needed to coat the surface prior to ALD barrier film deposition. We present the impact of architecture on the performance of aluminum oxide (Al{sub 2}O{sub 3})/hafnium oxide (HfO{sub 2}) ALD nanolaminate barrier films deposited on fluorinated polymer layer using an optical calcium (Ca) test under damp heat. It is found that with increasing polymer thickness, the barrier films with residual tensile stress are prone to cracking resulting in rapid failure of the Ca sensor at 50 °C/85% relative humidity. Inserting a SiN{sub x} layer with residual compressive stress between the polymer and ALD layers is found to prevent cracking over a range of polymer thicknesses with more than 95% of the Ca sensor remaining after 500 h of testing. These results suggest that controlling mechanical properties and film architecture play an important role in the performance of direct deposited ALD barriers.

  7. Continuous Carbon Nanotube-Based Fibers and Films for Applications Requiring Enhanced Heat Dissipation.

    Science.gov (United States)

    Liu, Peng; Fan, Zeng; Mikhalchan, Anastasiia; Tran, Thang Q; Jewell, Daniel; Duong, Hai M; Marconnet, Amy M

    2016-07-13

    The production of continuous carbon nanotube (CNT) fibers and films has paved the way to leverage the superior properties of individual carbon nanotubes for novel macroscale applications such as electronic cables and multifunctional composites. In this manuscript, we synthesize fibers and films from CNT aerogels that are continuously grown by floating catalyst chemical vapor deposition (FCCVD) and measure thermal conductivity and natural convective heat transfer coefficient from the fiber and film. To probe the mechanisms of heat transfer, we develop a new, robust, steady-state thermal characterization technique that enables measurement of the intrinsic fiber thermal conductivity and the convective heat transfer coefficient from the fiber to the surrounding air. The thermal conductivity of the as-prepared fiber ranges from 4.7 ± 0.3 to 28.0 ± 2.4 W m(-1) K(-1) and depends on fiber volume fraction and diameter. A simple nitric acid treatment increases the thermal conductivity by as much as a factor of ∼3 for the fibers and ∼6.7 for the thin films. These acid-treated CNT materials demonstrate specific thermal conductivities significantly higher than common metals with the same absolute thermal conductivity, which means they are comparatively lightweight, thermally conductive fibers and films. Beyond thermal conductivity, the acid treatment enhances electrical conductivity by a factor of ∼2.3. Further, the measured convective heat transfer coefficients range from 25 to 200 W m(-2) K(-1) for all fibers, which is higher than expected for macroscale materials and demonstrates the impact of the nanoscale CNT features on convective heat losses from the fibers. The measured thermal and electrical performance demonstrates the promise for using these fibers and films in macroscale applications requiring effective heat dissipation. PMID:27322344

  8. Structural properties of the titanium dioxide thin films grown by atomic layer deposition at various numbers of reaction cycles

    International Nuclear Information System (INIS)

    A dependence of structural properties of TiO2 films grown on both Si- and Ti-substrates by atomic layer deposition (ALD) at the temperature range of 250-300 deg. C from titanium ethoxide and water on the number of reaction cycles N was investigated using Fourier-transform infrared (FTIR) spectroscopy and X-Ray diffraction (XRD). TiO2 films grown on both Si- and Ti-substrates revealed amorphous structure at low values of N 2 with structure of anatase on both types of substrates and according to XRD-measurements the sizes of crystallites rose with the increase of N. The maximum anatase crystallite size for TiO2 grown on Ti-substrate was found to be on ∼35% lower in comparing with that for TiO2 grown on Si-substrate. A use of titanium methoxide as a Ti precursor with the ligand size smaller than in case of titanium ethoxide allowed to observe an influence of the ligand size on both the growth per cycle and structural properties of TiO2. The average growth per cycle of TiO2 deposited from titanium methoxide and water (0.052 ± 0.01 nm/cycle) was essentially higher than that for TiO2 grown from titanium ethoxide and water (0.043 ± 0.01 nm/cycle). Ligands of smaller sizes were found to promote the higher crystallinity of TiO2 in comparison with the case of using the titanium precursor with ligands of bigger sizes.

  9. Thermal property tuning in aligned carbon nanotube films and random entangled carbon nanotube films by ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Jing [Department of Materials Science and Engineering, Texas A& M University, College Station, Texas 77843 (United States); Chen, Di; Wang, Xuemei [Department of Nuclear Engineering, Texas A& M University, College Station, Texas 77843 (United States); Bykova, Julia S.; Zakhidov, Anvar A. [The Alan G. MacDiarmid NanoTech Institute, University of Texas at Dallas, Richardson, Texas 75080 (United States); Shao, Lin, E-mail: lshao@tamu.edu [Department of Materials Science and Engineering, Texas A& M University, College Station, Texas 77843 (United States); Department of Nuclear Engineering, Texas A& M University, College Station, Texas 77843 (United States)

    2015-10-12

    Ion irradiation effects on thermal property changes are compared between aligned carbon nanotube (A-CNT) films and randomly entangled carbon nanotube (R-CNT) films. After H, C, and Fe ion irradiation, a focusing ion beam with sub-mm diameter is used as a heating source, and an infrared signal is recorded to extract thermal conductivity. Ion irradiation decreases thermal conductivity of A-CNT films, but increases that of R-CNT films. We explain the opposite trends by the fact that neighboring CNT bundles are loosely bonded in A-CNT films, which makes it difficult to create inter-tube linkage/bonding upon ion irradiation. In a comparison, in R-CNT films, which have dense tube networking, carbon displacements are easily trapped between touching tubes and act as inter-tube linkage to promote off-axial phonon transport. The enhancement overcomes the phonon transport loss due to phonon-defect scattering along the axial direction. A model is established to explain the dependence of thermal conductivity changes on ion irradiation parameters including ion species, energies, and current.

  10. Films, Buckypapers and Fibers from Clay, Chitosan and Carbon Nanotubes

    OpenAIRE

    Marc in het Panhuis; Holly Warren; Higgins, Thomas M.

    2011-01-01

    The mechanical and electrical characteristics of films, buckypapers and fiber materials from combinations of clay, carbon nanotubes (CNTs) and chitosan are described. The rheological time-dependent characteristics of clay are maintained in clay–carbon nanotube–chitosan composite dispersions. It is demonstrated that the addition of chitosan improves their mechanical characteristics, but decreases electrical conductivity by three-orders of magnitude compared to clay–CNT materials. We show that ...

  11. Nanometer-thick copper films grown by thermal atomic layer deposition

    International Nuclear Information System (INIS)

    Because of the superior properties of copper, it has been of great interest as a conducting material to replace aluminum in device manufacturing. In this study, we investigated the influence of substrate temperature, film thickness, and rapid thermal annealing (RTA) on the deposition of Cu films of thickness less than 10 nm. Compared to thicker films, the electrical properties of nanometer-thick films were found to be very sensitive to the deposition temperature. Further, we determined the optimal deposition temperature to obtain low-resistivity nanometer-thick Cu films. The Cu films were deposited with island-type growth, and the interconnection between grains plays a major role in the resistivity of the films. We also determined the critical thickness at which Cu films exhibit continuous growth as 8 nm. After RTA, the film color darkened, electron scattering became weak, and the resistivity reduced more than 20% with annealing at 300–350 °C, because of the growth of Cu grains. The results of this study indicate that thermal ALD can be used in conjunction with RTA to produce low-resistivity Cu thin films, the thickness, uniformity, and conformality of which can be easily controlled. - Highlights: • Resistance of nanometer-thick Cu film was sensitive to deposition temperature. • Optimal temperature deposition was determined to obtain low-resistivity. • Critical thickness at which Cu films exhibit continuous growth was determined. • Resistivity reduced with annealing at 300–350 °C

  12. Comprehensive analysis of the metabolome of Pseudomonas putida S12 grown on different carbon sources.

    Science.gov (United States)

    van der Werf, Mariët J; Overkamp, Karin M; Muilwijk, Bas; Koek, Maud M; van der Werff-van der Vat, Bianca J C; Jellema, Renger H; Coulier, Leon; Hankemeier, Thomas

    2008-04-01

    Metabolomics is an emerging, powerful, functional genomics technology that involves the comparative non-targeted analysis of the complete set of metabolites in an organism. We have set-up a robust quantitative metabolomics platform that allows the analysis of 'snapshot' metabolomes. In this study, we have applied this platform for the comprehensive analysis of the metabolite composition of Pseudomonas putida S12 grown on four different carbon sources, i.e. fructose, glucose, gluconate and succinate. This paper focuses on the microbial aspects of analyzing comprehensive metabolomes, and demonstrates that metabolomes can be analyzed reliably. The technical (i.e. sample work-up and analytical) reproducibility was on average 10%, while the biological reproducibility was approximately 40%. Moreover, the energy charge values of the microbial samples generated were determined, and indicated that no biotic or abiotic changes had occurred during sample work-up and analysis. In general, the metabolites present and their concentrations were very similar after growth on the different carbon sources. However, specific metabolites showed large differences in concentration, especially the intermediates involved in the degradation of the carbon sources studied. Principal component discriminant analysis was applied to identify metabolites that are specific for, i.e. not necessarily the metabolites that show those largest differences in concentration, cells grown on either of these four carbon sources. For selected enzymatic reactions, i.e. the glucose-6-phosphate isomerase, triosephosphate isomerase and phosphoglyceromutase reactions, the apparent equilibrium constants (K(app)) were calculated. In several instances a carbon source-dependent deviation between the apparent equilibrium constant (K(app)) and the thermodynamic equilibrium constant (K(eq)) was observed, hinting towards a potential point of metabolic regulation or towards bottlenecks in biosynthesis routes. For glucose-6

  13. Optical properties and structure of HfO{sub 2} thin films grown by high pressure reactive sputtering

    Energy Technology Data Exchange (ETDEWEB)

    MartInez, F L [Departamento de Electronica y TecnologIa de Computadoras, Universidad Politecnica de Cartagena, Campus Universitario Muralla del Mar, E-30202 Cartagena (Spain); Toledano-Luque, M [Departamento de Fisica Aplicada III, Universidad Complutense de Madrid, E-28040 Madrid (Spain); GandIa, J J [Departamento de EnergIa, CIEMAT, Avda. Complutense 22, E-28040 Madrid (Spain); Carabe, J [Departamento de EnergIa, CIEMAT, Avda. Complutense 22, E-28040 Madrid (Spain); Bohne, W [Hahn-Meitner-Institut Berlin, Abteilung SF4, D-14109 Berlin (Germany); Roehrich, J [Hahn-Meitner-Institut Berlin, Abteilung SF4, D-14109 Berlin (Germany); Strub, E [Hahn-Meitner-Institut Berlin, Abteilung SF4, D-14109 Berlin (Germany); Martil, I [Departamento de Fisica Aplicada III, Universidad Complutense de Madrid, E-28040 Madrid (Spain)

    2007-09-07

    Thin films of hafnium oxide (HfO{sub 2}) have been grown by high pressure reactive sputtering on transparent quartz substrates (UV-grade silica) and silicon wafers. Deposition conditions were adjusted to obtain polycrystalline as well as amorphous films. Optical properties of the films deposited on the silica substrates were investigated by transmittance and reflectance spectroscopy in the ultraviolet, visible and near infrared range. A numerical analysis method that takes into account the different surface roughness of the polycrystalline and amorphous films was applied to calculate the optical constants (refractive index and absorption coefficient). Amorphous films were found to have a higher refractive index and a lower transparency than polycrystalline films. This is attributed to a higher density of the amorphous samples, which was confirmed by atomic density measurements performed by heavy-ion elastic recoil detection analysis. The absorption coefficient gave an excellent fit to the Tauc law (indirect gap), which allowed a band gap value of 5.54 eV to be obtained. The structure of the films (amorphous or polycrystalline) was found to have no significant influence on the nature of the band gap. The Tauc plots also give information about the structure of the films, because the slope of the plot (the Tauc parameter) is related to the degree of order in the bond network. The amorphous samples had a larger value of the Tauc parameter, i.e. more order than the polycrystalline samples. This is indicative of a uniform bond network with percolation of the bond chains, in contrast to the randomly oriented polycrystalline grains separated by grain boundaries.

  14. Characterization of oxide film layers formed on A106 B carbon steel in simulated secondary coolant conditions of nuclear power plants

    International Nuclear Information System (INIS)

    The water chemistry of the secondary coolant in the majority Nuclear Power Plants is controlled by AVT (All Volatile Treatment) procedure, wherein volatile amines are use to maintain the alkaline pH required for minimizing the corrosion of structural materials which one of them is Carbon Steel. In this procedure: hydrazine, morpholine and ethanolamine are used commonly as conditioning reagents. In this context, experiments were carried out by exposing carbon steel A106 B samples in a simulated secondary coolant in order to study the nature of the oxide films. The tests were performed in a static autoclave at 260 ºC using two media: 1) Hydrazine + morpholine and 2) Hydrazine + ethanolamine during different exposure periods up to ≈1020 h. The composition, surface morphology, X-ray diffraction, a chemical descaling procedure were used- XPS, was also employed, to analyze the films grown during ≈1020 h in both media. The characterization showed that magnetite was the main corrosion product formed in the films grown in the two media. The material weight loss (W) could be fitted by a law of the type W = k tn, up to 1020 h of exposure, resulting in n =0,42, k = 6,24 for films grown in medium 1) and n = 0,39, k =6,08 for films grown in medium 2); where W is in mg/d m2 and t in h. (author)

  15. Preparation of thin carbon films (1963)

    International Nuclear Information System (INIS)

    Carbon deposits have been prepared on silica glass supports in order to determine more accurately than by weighing the losses liable to occur during oxidation, for example under irradiation in the presence of CO2. Several processes have been studied with a view to obtaining deposits for which the variation in optical density as a function of carbon departure shall be reproducible for each sample. Among the methods used, the most satisfactory is that in which the pyrolytic carbon deposited on a carbon filament is evaporated; however only the samples prepared simultaneously exhibit the required identical behaviour. The carbonaceous deposits have been studied by micro-electronic diffraction. An examination of the photographs shows the presence of graphite monocrystals of about (30 μ)2. (author)

  16. Synthesis and properties of ZnS-EuS films grown from volatile complex compounds

    Energy Technology Data Exchange (ETDEWEB)

    Bessergenev, V.G.; Ivanova, E.N.; Kovalevskaya, Y.A. [Siberian Branch of Russian Academy of Sciences, Novosibirsk (Russian Federation). Inst. of Inorganic Chemistry

    1997-10-01

    Deposition and characterization of films of ZnS, EuS and ZnS:Eu are described. The films have been prepared by chemical vapor deposition using new volatile complex compounds, dithiocarbamates of Zn and Eu, as precursors. Characterization includes X-ray diffraction, chemical analysis of the film composition, Raman spectroscopy, ellipsometry, and spectrophotometry. The spatial chemical homogeneity of the films has been determined using a recently developed method of differential dissolution and found to be uniform. Doping of ZnS by Eu with dopant concentration up to 0.3 at.% has been achieved. Effects of Eu doping on structural and optical properties of the films are presented.

  17. Reactive Bonding Film for Bonding Carbon Foam Through Metal Extrusion

    CERN Document Server

    Chertok, Maxwell; Irving, Michael; Neher, Christian; Tripathi, Mani; Wang, Ruby; Zheng, Gayle

    2016-01-01

    Future tracking detectors, such as those under development for the High Luminosity LHC, will require mechanical structures employing novel materials to reduce mass while providing excellent strength, thermal conductivity, and radiation tolerance. Adhesion methods for such materials are under study at present. This paper demonstrates the use of reactive bonding film as an adhesion method for bonding carbon foam.

  18. Plasma-enhanced Deposition of Nano-Structured Carbon Films

    Institute of Scientific and Technical Information of China (English)

    Yang Qiaoqin (杨巧勤); Xiao Chijin (肖持进); A. Hirose

    2005-01-01

    By pre-treating substrate with different methods and patterning the catalyst, selective and patterned growth of diamond and graphitic nano-structured carbon films have been realized through DC Plasma-Enhanced Hot Filament Chemical Vapor Deposition (PE-HFCVD).Through two-step processing in an HFCVD reactor, novel nano-structured composite diamond films containing a nanocrystalline diamond layer on the top of a nanocone diamond layer have been synthesized. Well-aligned carbon nanotubes, diamond and graphitic carbon nanocones with controllable alignment orientations have been synthesized by using PE-HFCVD. The orientation of the nanostructures can be controlled by adjusting the working pressure. In a Microwave Plasma Enhanced Chemical Vapor Deposition (MW-PECVD) reactor, high-quality diamond films have been synthesized at low temperatures (310 ℃~550 ℃) without adding oxygen or halogen gas in a newly developed processing technique. In this process, carbon source originates from graphite etching, instead of hydrocarbon. The lowest growth temperature for the growth of nanocrystalline diamond films with a reasonable growth rate without addition of oxygen or halogen is 260 ℃.

  19. Scattering of terahertz radiation from oriented carbon nanotube films

    DEFF Research Database (Denmark)

    Eichhorn, Finn; Jepsen, Peter Uhd; Schroeder, Nicholas;

    2009-01-01

    Session title: IThC-THz Interactions with Condensed Matter. We report on the use of terahertz time-domain spectroscopy to measure scattering from multi-walled carbon nanotubes aligned normal to the film plane. Measurements indicate scattering from the nanotubes is significantly stronger than...

  20. Tribological behavior and film formation mechanisms of carbon nanopearls

    Science.gov (United States)

    Hunter, Chad Nicholas

    Carbon nanopearls (CNPs) are amorphous carbon spheres that contain concentrically-oriented nanometer-sized graphitic flakes. Because of their spherical shape, size (˜150 nm), and structure consisting of concentrically oriented nano-sized sp2 flakes, CNPs are of interest for tribological applications, in particular for use in solid lubricant coatings. These studies were focused on investigating mechanisms of CNP lubrication, development of methods to deposit CNP onto substrates, synthesizing CNP-gold hybrid films using Matrix Assisted Pulsed Laser Evaporation (MAPLE) and magnetron sputtering, and studying plasmas and other species present during film deposition using an Electrostatic Quadrupole Plasma (EQP) analyzer. CNPs deposited onto silicon using drop casting with methanol showed good lubricating properties in sliding contacts under dry conditions, where a transfer film was created in which morphology changed from nano-sized spheres to micron-sized agglomerates consisting of many highly deformed CNPs in which the nano-sized graphene flakes are sheared from the wrapped layer structure of the CNPs. The morphology of carbon nanopearl films deposited using a MAPLE system equipped with a 248 nm KrF excimer laser source was found to be influenced by multiple factors, including composition of the matrix solvent, laser energy and repetition rate, background pressure, and substrate temperature. The best parameters for depositing CNP films that are disperse, droplet-free and have the maximum amount of material deposited are as follows: toluene matrix, 700 mJ, 1 Hz, 100°C substrate temperature, and unregulated vacuum pressure. During depositions using MAPLE and sputtering in argon, electron ionization of toluene vapor generated from the MAPLE target and charge exchange reactions between toluene vapor and the argon plasma generated by the magnetron caused carbon to be deposited onto the gold sputter target. Thin films deposited under these conditions contained high

  1. Capacitive humidity sensing properties of carbon nanotubes grown on silicon nanoporous pillar array

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    Multi-walled carbon nanotubes (CNTs) were grown on silicon nanoporous pillar array (Si-NPA) by thermal chemical vapor deposition method, and the structural and capacitive humidity sensing properties of CNT/Si-NPA were studied. It was found that with the relative humidity (RH) changing from 11% to 95%, a device re-sponse of ~480% was achieved at the frequency of 50000 Hz, and a linear device response curve could be obtained by adopting longitudinal logarithmic coordinate. The response/recovery times were measured to be ~20 s and ~10 s, respectively, which indicated a rather fast response/recovery rate. The adsorption-desorption dynamic cycle experiments demonstrated the high measurement reproducibility of CNT/Si-NPA sensors. These excellent performances were attributed to the unique surface structure, morphology and chemical inertness of CNT/Si-NPA.

  2. CVD-grown horizontally aligned single-walled carbon nanotubes: synthesis routes and growth mechanisms.

    Science.gov (United States)

    Ibrahim, Imad; Bachmatiuk, Alicja; Warner, Jamie H; Büchner, Bernd; Cuniberti, Gianaurelio; Rümmeli, Mark H

    2012-07-01

    Single-walled carbon nanotubes (SWCNTs) have attractive electrical and physical properties, which make them very promising for use in various applications. For some applications however, in particular those involving electronics, SWCNTs need to be synthesized with a high degree of control with respect to yield, length, alignment, diameter, and chirality. With this in mind, a great deal of effort is being directed to the precision control of vertically and horizontally aligned nanotubes. In this review the focus is on the latter, horizontally aligned tubes grown by chemical vapor deposition (CVD). The reader is provided with an in-depth review of the established vapor deposition orientation techniques. Detailed discussions on the characterization routes, growth parameters, and growth mechanisms are also provided. PMID:22619167

  3. Fracture Toughness of Vapor Grown Carbon Nanofiber-Reinforced Polyethylene Composites

    Directory of Open Access Journals (Sweden)

    A. R. Adhikari

    2009-01-01

    Full Text Available The impact fracture behavior of a vapor grown carbon nanofiber (VGCNF reinforced high-density polyethylene (PE composite was evaluated. The samples consisting of pure PE and composites with 10 wt% and 20 wt% of VGCNFs were prepared by a combination of hot-pressing and extrusion methods. Extrusion was used to produce samples with substantially different shear histories. The fracture behavior of these samples was analyzed using the essential work of fracture (EWF approach. The results showed an increase of 292% in the essential work of fracture for the loading of 10 wt%. Further increasing fiber loading to 20 wt% caused the essential work of fracture to increase only 193% with respect to the unmodified material. Evaluation of the fracture surface morphology indicated that the fibril frequency and microvoid size within the various fiber loadings depended strongly on processing conditions.

  4. Capacitive humidity sensing properties of carbon nanotubes grown on silicon nanoporous pillar array

    Institute of Scientific and Technical Information of China (English)

    JIANG WeiFen; XIAO ShunHua; ZHANG HuanYun; DONG YongFen; LI XinJian

    2007-01-01

    Multi-walled carbon nanotubes (CNTs) were grown on silicon nanoporous pillar array (Si-NPA) by thermal chemical vapor deposition method, and the structural and capacitive humidity sensing properties of CNT/Si-NPA were studied. It was found that with the relative humidity (RH) changing from 11% to 95%, a device response of ~480% was achieved at the frequency of 50000 Hz, and a linear device response curve could be obtained by adopting longitudinal logarithmic coordinate. The response/recovery times were measured to be ~20 s and ~10 s, respectively, which indicated a rather fast response/recovery rate. The adsorption-desorption dynamic cycle experiments demonstrated the high measurement reproducibility of CNT/Si-NPA sensors. These excellent performances were attributed to the unique surface structure, morphology and chemical inertness of CNT/Si-NPA.

  5. Effects of growth temperature on the properties of HfO2 films grown by atomic layer deposition

    International Nuclear Information System (INIS)

    A relatively high dielectric constant (κ=20-25), wide band gap and conduction band offset (6.0 eV and 1.5 eV, respectively), and good thermal stability upon contact with silicon indicate hafnium dioxide as one of the most promising candidates to substitute silicon dioxide as dielectric gate in complementary metal-oxide-semiconductor devices. To investigate the properties of thin films suitable for application in microelectronics, HfO2 films were grown by atomic layer deposition. Hafnium tetrachloride (HfCl4) and water (H2O) were used as precursors. Film structural, morphological, and compositional properties were then investigated focusing on their dependence on growth temperature in the range between 150 degrees C and 350 degrees C. A modification of the film structure with growth temperature is expected because the density of the reactive OH sites is known to decrease with increasing temperature. The extent and consequences of these modifications were investigated using X-ray diffraction and reflectivity, and atomic force microscopy. Time of flight-secondary ion mass spectrometry was used to study film composition. (author)

  6. Structural properties of strained YBa2Cu3O6+x superconducting films grown by pulsed laser deposition

    Science.gov (United States)

    Ariosa, Daniel; Abrecht, M.; Pavuna, Davor; Onellion, Marshall

    2000-09-01

    In YBa2Cu3O6+x compound the tetragonal to orthorhombic transition occurs around x equals 0.3, followed by a continuum variation of lattice parameters. Hence both, the structural and superconducting properties, depend upon the oxygen content in CuO chains. Conversely, the epitaxial stress, exerted by the substrate on YBCO films, modified the lattice parameters influencing the oxygen stability in the chains. The understanding of this mechanism is essential when growing epitaxial films for in- situ photoemission studies as well as for tunneling experiments, since the oxygen stability up to the top surface unit-cell is a central issue. We have studied this effect on c-axis oriented YBCO films grown by laser ablation on (001) STO single crystals. Accurate x-ray diffraction analysis of thick films (t GRT 500 angstrom) indicates the presence of two distinct layers, one strained and the other relaxed. Detailed analysis shows that the relaxed layer is as well oxidized as bulk samples, while the strained one is oxygen deficient. Furthermore, despite an oxygen content of about x equals 0.65, the strained layer is in the tetragonal phase (in bulk, the tetragonal phase exists for x < 0.3). We discuss these results in terms of competition between the chemical pressure induced by oxygen inclusion in the chains, and the uniaxial stress within the film.

  7. Superconducting properties of very high quality NbN thin films grown by high temperature chemical vapor deposition

    Science.gov (United States)

    Hazra, D.; Tsavdaris, N.; Jebari, S.; Grimm, A.; Blanchet, F.; Mercier, F.; Blanquet, E.; Chapelier, C.; Hofheinz, M.

    2016-10-01

    Niobium nitride (NbN) is widely used in high-frequency superconducting electronics circuits because it has one of the highest superconducting transition temperatures ({T}{{c}}˜ 16.5 {{K}}) and largest gap among conventional superconductors. In its thin-film form, the T c of NbN is very sensitive to growth conditions and it still remains a challenge to grow NbN thin films (below 50 nm) with high T c. Here, we report on the superconducting properties of NbN thin films grown by high-temperature chemical vapor deposition (HTCVD). Transport measurements reveal significantly lower disorder than previously reported, characterized by a Ioffe-Regel parameter ({k}{{F}}{\\ell }) ˜ 12. Accordingly we observe {T}{{c}}˜ 17.06 {{K}} (point of 50% of normal state resistance), the highest value reported so far for films of thickness 50 nm or less, indicating that HTCVD could be particularly useful for growing high quality NbN thin films.

  8. Production and characterization of Nd,Cr:GSGG thin films on Si(001) grown by pulsed laser ablation

    Science.gov (United States)

    Willmott, P. R.; Manoravi, P.; Holliday, K.

    Nd,Cr:Gd3Sc2Ga3O12 (GSGG) thin films have been produced for the first time. They were grown on Si(001) substrates at 650 °C by pulsed laser ablation at 248 nm of a crystalline Nd,Cr:GSGG target rod. The laser plume was analyzed using time-of-flight quadrupole mass spectroscopy, and consisted of elemental and metal oxide fragments with kinetic energies typically in the range 10 to 40 eV, though extending up to 100 eV. Although films deposited in vacuum using laser fluences of 0.8+/-0.1 Jcm-2 reproduced the Nd,Cr:GSGG bulk stoichiometry, those deposited using fluences above 3 Jcm-2 resulted in noncongruent material transfer and were deficient in Ga and Cr. Attempts to grow films using synchronized oxygen or oxygen/argon pulses yielded mixed oxide phases. Under optimal growth conditions, the films were heteroepitaxial, with GSGG(001)[100]∥Si(001)[100], and exhibited Volmer-Weber-type growth. Room-temperature emission spectra of the films suggest efficient non-radiative energy transfer between Cr3+ and Nd3+ ions, similar to that of the bulk crystal.

  9. Characterization of thick GaN films directly grown on wet-etching patterned sapphire by HVPE

    International Nuclear Information System (INIS)

    Thick GaN films of high quality are directly grown on wet-etching patterned sapphire in a vertical hydride vapour phase epitaxy reactor. The optical and structural properties of GaN films are studied using scanning electronic microscopy and cathodoluminescence. Test results show that initial growth of hydride vapour phase epitaxy GaN occurs not only on the mesas but also on the two asymmetric sidewalls of the V-shaped grooves without selectivity. After the two-step coalescence near the interface, the GaN films near the surface keep on growing along the direction perpendicular to the long sidewall. Based on Raman results, GaN of the coalescence region in the grooves has the maximum residual stress and poor crystalline quality over the whole GaN film, and the coalescence process can release the stress. Therefore, stress-free thick GaN films are prepared with smooth and crack-free surfaces by this particular growth mode on wet-etching patterned sapphire substrates. (authors)

  10. Characterization of Thick GaN Films Directly Grown on Wet-Etching Patterned Sapphire by HVPE

    International Nuclear Information System (INIS)

    Thick GaN films of high quality are directly grown on wet-etching patterned sapphire in a vertical hydride vapour phase epitaxy reactor. The optical and structural properties of GaN films are studied using scanning electronic microscopy and cathodoluminescence. Test results show that initial growth of hydride vapour phase epitaxy GaN occurs not only on the mesas but also on the two asymmetric sidewalls of the V-shaped grooves without selectivity. After the two-step coalescence near the interface, the GaN films near the surface keep on growing along the direction perpendicular to the long sidewall. Based on Raman results, GaN of the coalescence region in the grooves has the maximum residual stress and poor crystalline quality over the whole GaN film, and the coalescence process can release the stress. Therefore, stress-free thick GaN films are prepared with smooth and crack-free surfaces by this particular growth mode on wet-etching patterned sapphire substrates

  11. Electrical, optical, and structural properties of InZnSnO electrode films grown by unbalanced radio frequency magnetron sputtering

    International Nuclear Information System (INIS)

    We have investigated the electrical, optical, structural, and annealing properties of indium zinc tin oxide (IZTO) films prepared by an unbalanced radio frequency (RF) magnetron sputtering at room temperature, in a pure Ar ambient environment. It was found that the electrical and optical properties of unbalanced RF sputter grown IZTO films at room temperature were influenced by RF power and working pressure. At optimized growth condition, we could obtain the IZTO film with the low resistivity of 3.77 x 10-4 Ω cm, high transparency of ∼ 87% and figure of merit value of 21.2 x 10-3Ω-1, without the post annealing process, even though it was completely an amorphous structure due to low substrate temperature. In addition, the field emission scanning electron microscope analysis results showed that all IZTO films are amorphous structures with very smooth surfaces regardless of the RF power and working pressure. However, the rapid thermal annealing process above the temperature of 400 oC lead to an abrupt increase in resistivity and sheet resistance due to the transition of film structure from amorphous to crystalline, which was confirmed by X-ray diffraction examination.

  12. Structural, Optical Constants and Photoluminescence of ZnO Thin Films Grown by Sol-Gel Spin Coating

    Directory of Open Access Journals (Sweden)

    Abdel-Sattar Gadallah

    2013-01-01

    Full Text Available We report manufacturing and characterization of low cost ZnO thin films grown on glass substrates by sol-gel spin coating method. For structural properties, X-ray diffraction measurements have been utilized for evaluating the dominant orientation of the thin films. For optical properties, reflectance and transmittance spectrophotometric measurements have been done in the spectral range from 350 nm to 2000 nm. The transmittance of the prepared thin films is 92.4% and 88.4%. Determination of the optical constants such as refractive index, absorption coefficient, and dielectric constant in this wavelength range has been evaluated. Further, normal dispersion of the refractive index has been analyzed in terms of single oscillator model of free carrier absorption to estimate the dispersion and oscillation energy. The lattice dielectric constant and the ratio of free carrier concentration to free carrier effective mass have been determined. Moreover, photoluminescence measurements of the thin films in the spectral range from 350 nm to 900 nm have been presented. Electrical measurements for resistivity evaluation of the films have been done. An analysis in terms of order-disorder of the material has been presented to provide more consistency in the results.

  13. Structural, morphological, and optoelectrical characterization of Bi2S3 thin films grown by co-evaporation

    Science.gov (United States)

    Mesa, F.; Arredondo, C. A.; Vallejo, W.

    2016-03-01

    This work presents the results of synthesis and characterization of polycrystalline n-type Bi2S3 thin films. The films were grown through a chemical reaction from co-evaporation of their precursor elements in a soda-lime glass substrate. The effect of the experimental conditions on the optical, morphological structural properties, the growth rate, and the electrical conductivity (σ) was studied through spectral transmittance, X-ray diffraction (XRD), atomic force microscopy (AFM) and σ versus T measurements, respectively. The results showed that the films grow only in the orthorhombic Bi2S3 bismuthinite phase. It was also found that the Bi2S3 films present an energy band gap (Eg) of about 1.38 eV. In addition to these results, the electrical conductivity of the Bi2S3 films was affected by both the transport of free carriers in extended states of the conduction band and for variable range hopping transport mechanisms, each one predominating in a different temperature range.

  14. Spectroscopic and microscopic studies of self-assembled nc-Si/a-SiC thin films grown by low pressure high density spontaneous plasma processing.

    Science.gov (United States)

    Das, Debajyoti; Kar, Debjit

    2014-12-14

    In view of suitable applications in the window layer of nc-Si p-i-n solar cells in superstrate configuration, the growth of nc-Si/a-SiC composite films was studied, considering the trade-off relation between individual characteristics of its a-SiC component to provide a wide optical-gap and electrically conducting nc-Si component to simultaneously retain enough crystalline linkages to facilitate proper crystallization to the i-nc-Si absorber-layer during its subsequent growth. Self-assembled nc-Si/a-SiC thin films were spontaneously grown by low-pressure planar inductively coupled plasma CVD, operating in electromagnetic mode, providing high atomic-H density. Spectroscopic simulations of ellipsometry and Raman data, and systematic chemical and structural analysis by XPS, TEM, SEM and AFM were performed. Corresponding to optimized inclusion of C essentially incorporated as Si-C bonds in the network, the optical-gap of the a-SiC component widened, void fraction including the incubation layer thickness reduced. While the bulk crystallinity decreased only marginally, Si-ncs diminished in size with narrower distribution and increased number density. With enhanced C-incorporation, formation of C-C bonds in abundance deteriorates the Si continuous bonding network and persuades growth of an amorphous dominated silicon-carbon heterostructure containing high-density tiny Si-ncs. Stimulated nanocrystallization identified in the Si-network, induced by a limited amount of carbon incorporation, makes the material most suitable for applications in nc-Si solar cells. The novelty of the present work is to enable spontaneous growth of self-assembled superior quality nc-Si/a-SiC thin films and simultaneous spectroscopic simulation-based optimization of properties for utilization in devices. PMID:25342429

  15. Magnetic and Optical Properties of the TiO2-Co-TiO2 Composite Films Grown by Magnetron Sputtering

    Institute of Scientific and Technical Information of China (English)

    LIU Fa-min; DING Peng; SHI Wei-mei; WANG Tian-min

    2007-01-01

    The TiO2-Co-TiO2 sandwich films were successfully grown on glass and silicon substrata making alternate use of radio frequency reactive magnetron sputtering and direct current magnetron sputtering. The structures and properties of these films were identified with X-ray diffraction (XRD), Raman spectra and X-ray photoemission spectra (XPS). It is shown that the sandwich film consists of two anatase TiO2 films with an embedded Co nano-film. The fact that, when the Co nano-film thickens, varied red shifts appear in optical absorption spectra may well be explained by the quantum confinement and tunnel effects. As for magnetic properties, the saturation magnetization, remnant magnetic induction and coercivity vary with the thickness of the Co nano-films. Moreover, the Co nano-film has a critical thickness of about 8.6 nm, which makes the coercivity of the composite film reach the maximum of about 1413 Oe.

  16. Poly(lactide-co-trimethylene carbonate) and polylactide/polytrimethylene carbonate blown films.

    Science.gov (United States)

    Li, Hongli; Chang, Jiangping; Qin, Yuyue; Wu, Yan; Yuan, Minglong; Zhang, Yingjie

    2014-01-01

    In this work, poly(lactide-co-trimethylene carbonate) and polylactide/ polytrimethylene carbonate films are prepared using a film blowing method. The process parameters, including temperature and screw speed, are studied, and the structures and properties of the P(LA-TMC) and PLA/PTMC films are investigated. The scanning electron microscope (SEM) images show that upon improving the content of TMC and PTMC, the lamellar structures of the films are obviously changed. With increasing TMC monomer or PTMC contents, the elongation at the break is improved, and the maximum is up to 525%. The water vapor permeability (WVP) results demonstrate that the WVP of the PLA/PTMC film increased with the increase in the PTMC content, whereas the WVP of the P(LA-TMC) film decreased. Thermogravimetric (TG) measurements reveal that the decomposition temperatures of the P(LA-TMC) and PLA/PTMC films decrease with increases in the TMC and PTMC contents, respectively, but the processing temperature is significantly lower than the initial decomposition temperature. P(LA-TMC) or PLA/PTMC film can extend the shelf life of apples, for instance, like commercial LDPE film used in fruit packaging in supermarkets. PMID:24534806

  17. Special Polymer/Carbon Composite Films for Detecting SO2

    Science.gov (United States)

    Homer, Margie; Ryan, Margaret; Yen, Shiao-Pin; Kisor, Adam; Jewell, April; Shevade, Abhijit; Manatt, Kenneth; Taylor, Charles; Blanco, Mario; Goddard, William

    2008-01-01

    A family of polymer/carbon films has been developed for use as sensory films in electronic noses for detecting SO2 gas at concentrations as low as 1 part per million (ppm). Most previously reported SO2 sensors cannot detect SO2 at concentrations below tens of ppm; only a few can detect SO2 at 1 ppm. Most of the sensory materials used in those sensors (especially inorganic ones that include solid oxide electrolytes, metal oxides, and cadmium sulfide) must be used under relatively harsh conditions that include operation and regeneration at temperatures greater than 100 C. In contrast, the present films can be used to detect 1 ppm of SO2 at typical opening temperatures between 28 and 32 C and can be regenerated at temperatures between 36 and 40 C. The basic concept of making sensing films from polymer/carbon composites is not new. The novelty of the present family of polymer/carbon composites lies in formulating the polymer components of these composites specifically to optimize their properties for detecting SO2. First-principles quantum-mechanical calculations of the energies of binding of SO2 molecules to various polymer functionalities are used as a guide for selecting polymers and understanding the role of polymer functionalities in sensing. The polymer used in the polymer-carbon composite is a copolymer of styrene derivative units with vinyl pyridine or substituted vinyl pyridine derivative units. To make a substituted vinyl pyridine for use in synthesizing such a polymer, poly(2-vinyl pyridine) that has been dissolved in methanol is reacted with 3-chloropropylamine that has been dissolved in a solution of methanol. The methanol is then removed to obtain the copolymer. Later, the copolymer can be dissolved in an appropriate solvent with a suspension of carbon black to obtain a mixture that can be cast and then dried to obtain a sensory film.

  18. Microstructural and conductivity comparison of Ag films grown on amorphous TiO2 and polycrystalline ZnO

    Energy Technology Data Exchange (ETDEWEB)

    Dannenberg, Rand; Stach, Eric; Glenn, Darin; Sieck, Peter; Hukari, Kyle

    2001-03-26

    8 nm thick Ag films were sputter deposited onto amorphous TiO{sub 2} underlayers 25 nm thick, and also amorphous TiO{sub 2} (25 nm)/ZnO (5 nm) multiunderlayers. The substrates were back-etched Si with a 50 nm thick LPCVD Si{sub 3}N{sub 4} electron transparent membrane. The ZnO, sputtered onto amorphous TiO{sub 2}, formed a continuous layer with a grain size of 5 nm in diameter, on the order of the film thickness. There are several microstructural differences in the Ag dependent on the underlayers, revealed by TEM. First a strong {l_brace}0001{r_brace} ZnO to {l_brace}111{r_brace} Ag fibre-texture relationship exists. On TiO{sub 2} the Ag microstructure shows many abnormal grains whose average diameter is about 60-80 nm, whereas the films on ZnO show few abnormal grains. The background matrix of normal grains on the TiO{sub 2} is roughly 15 nm, while the normal grain size on the ZnO is about 25 nm. Electron diffraction patterns show that the film on ZnO has a strong {l_brace}111{r_brace} orientation, and dark field images with this diffraction condition have a grain size of about 30 nm. In a region near the center of the TEM grid where there is the greatest local heating during deposition, Ag films grown on amorphous TiO{sub 2} are discontinuous, whereas on ZnO, the film is continuous. When films 8 nm films are grown on solid glass substrates, those with ZnO underlayers have sheet resistances of 5.68 {Omega}/, whereas those on TiO{sub 2} are 7.56 {Omega}/, and when 16 nm thick, the corresponding sheet resistances are 2.7 {Omega}/ and 3.3 {Omega}/. The conductivity difference is very repeatable. The improved conductivity is thought to be a combined effect of reduced grain boundary area per unit volume, the predominance of low grain boundary resistivity Coincidence Site Lattice boundaries from the Ag {l_brace}111{r_brace} orientation, and Ag planarization on ZnO resulting in less groove formation on deposition, concluded from atomic force microscopy.

  19. Nanostructured and wide bandgap CdS:O thin films grown by reactive RF sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Islam, M. A.; Rahman, K. S.; Haque, F.; Rashid, M. J.; Akhtaruzzaman, M.; Sopian, K.; Sulaiman, Y. [Solar Energy Research Institute (SERI), National University of Malaysia, 43600 Bangi (Malaysia); Amin, N. [Solar Energy Research Institute (SERI), National University of Malaysia, 43600 Bangi (Malaysia); Department of Electrical, Electronic and System Engineering, Faculty of Engineering and Built Environment, National University of Malaysia, 43600 Bangi (Malaysia)

    2015-05-15

    In this study, CdS:O thin films were prepared from a 99.999% CdS target by reactive sputtering in a Ar:O{sub 2} (99:1) ambient with different RF power at room temperature. The deposited films were studied by means of XRD, SEM, EDX, Hall Effect and UV-Vis spectrometry. The incorporations of O{sub 2} into the films were observed to increase with the decrease of deposition power. The cryatallinity of the films were reduced, whereas the band gaps of the films were increased by the increase of O{sub 2} content on the films. The films were found in nano-structured grains with a compact surface. It has been seen that the highest carrier density is observed in the film with O{sub 2} at.% 21.10, while the values decreased with the further increase or decrease of O{sub 2} content on the films; indicating that specific amount of donor like O{sub 2} atoms substitute to the S atoms can improve the carrier density of the CdS:O thin film.

  20. Strength and Fracture Resistance of Amorphous Diamond-Like Carbon Films for MEMS

    Directory of Open Access Journals (Sweden)

    K. N. Jonnalagadda

    2009-01-01

    Full Text Available The mechanical strength and mixed mode I/II fracture toughness of hydrogen-free tetrahedral amorphous diamond-like carbon (ta-C films, grown by pulsed laser deposition, are discussed in connection to material flaws and its microstructure. The failure properties of ta-C were obtained from films with thicknesses 0.5–3 μm and specimen widths 10–20 μm. The smallest test samples with 10 μm gage section averaged a strength of 7.3 ± 1.2 GPa, while the strength of 20-μm specimens with thicknesses 0.5–3 μm varied between 2.2–5.7 GPa. The scaling of the mechanical strength with specimen thickness and dimensions was owed to deposition-induced surface flaws, and, only in the smallest specimens, RIE patterning generated specimen sidewall flaws. The mode I fracture toughness of ta-C films is KIc=4.4±0.4 MPam, while the results from mixed mode I/II fracture experiments with cracks arbitrarily oriented in the plane of the film compared very well with theoretical predictions.

  1. Hydorgen sputtering of carbon thin films deposited on platinum

    International Nuclear Information System (INIS)

    Carbon has been suggested as a suitable low Z element for the lining of the first walls of controlled thermonuclear reactors in order to reduce radiative plasma losses due to sputtering. In this paper the measurement of sputtering of carbon thin films by protons in the energy range 0.6-10.0 keV, is described. H2+ or H3+ ions were used as bombarding ions to obtain equivalent H+ sputtering yields at energies below that at which the ion source provides sufficient proton current. The sputter yield was found to range from 7x10-3-1.5x10-2 atoms/proton with a broad maximum in the 2.0 keV region with the carbon film kept near ambient temperature. (B.D.)

  2. Carbon Nanotubes for Thin Film Transistor: Fabrication, Properties, and Applications

    Directory of Open Access Journals (Sweden)

    Yucui Wu

    2013-01-01

    Full Text Available We review the present status of single-walled carbon nanotubes (SWCNTs for their production and purification technologies, as well as the fabrication and properties of single-walled carbon nanotube thin film transistors (SWCNT-TFTs. The most popular SWCNT growth method is chemical vapor deposition (CVD, including plasma-enhanced chemical vapor deposition (PECVD, floating catalyst chemical vapor deposition (FCCVD, and thermal CVD. Carbon nanotubes (CNTs used to fabricate thin film transistors are sorted by electrical breakdown, density gradient ultracentrifugation, or gel-based separation. The technologies of applying CNT random networks to work as the channels of SWCNT-TFTs are also reviewed. Excellent work from global researchers has been benchmarked and analyzed. The unique properties of SWCNT-TFTs have been reviewed. Besides, the promising applications of SWCNT-TFTs have been explored. Finally, the key issues to be solved in future have been summarized.

  3. Nanotribological performance of fullerene-like carbon nitride films

    Energy Technology Data Exchange (ETDEWEB)

    Flores-Ruiz, Francisco Javier; Enriquez-Flores, Christian Ivan [Centro de Investigación y Estudios Avanzados (CINVESTAV) IPN, Unidad Querétaro, Lib. Norponiente 2000, Real de Juriquilla, C.P. 76230, Querétaro, Qro., México (Mexico); Chiñas-Castillo, Fernando, E-mail: fernandochinas@gmail.com [Department of Mechanical Engineering, Instituto Tecnológico de Oaxaca, Oaxaca, Oax. Calz. Tecnológico No. 125, CP. 68030, Oaxaca, Oax. (Mexico); Espinoza-Beltrán, Francisco Javier [Centro de Investigación y Estudios Avanzados (CINVESTAV) IPN, Unidad Querétaro, Lib. Norponiente 2000, Real de Juriquilla, C.P. 76230, Querétaro, Qro., México (Mexico)

    2014-09-30

    Highlights: • Fullerene-like CNx samples show an elastic recovery of 92.5% and 94.5% while amorphous CNx samples had only 75% elastic recovery. • Fullerene-like CNx films show an increment of 34.86% and 50.57% in fractions of C 1s and N 1s. • Fullerene-like CNx samples show a lower friction coefficient compared to amorphous CNx samples. • Friction reduction characteristics of fullerene-like CNx films are strongly related to the increase of sp{sup 3} CN bonds. - Abstract: Fullerene-like carbon nitride films exhibit high elastic modulus and low friction coefficient. In this study, thin CNx films were deposited on silicon substrate by DC magnetron sputtering and the tribological behavior at nanoscale was evaluated using an atomic force microscope. Results show that CNx films with fullerene-like structure have a friction coefficient (CoF ∼ 0.009–0.022) that is lower than amorphous CNx films (CoF ∼ 0.028–0.032). Analysis of specimens characterized by X-ray photoelectron spectroscopy shows that films with fullerene-like structure have a higher number of sp{sup 3} CN bonds and exhibit the best mechanical properties with high values of elastic modulus (E > 180 GPa) and hardness (H > 20 GPa). The elastic recovery determined on specimens with a fullerene-like CNx structure was of 95% while specimens of amorphous CNx structure had only 75% elastic recovery.

  4. Effects of annealing time on infrared emissivity of the Pt film grown on Ni alloy

    Energy Technology Data Exchange (ETDEWEB)

    Huang Zhibin, E-mail: huangzhibin83@163.com [State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi' an 710072 (China); Zhou Wancheng; Tang Xiufeng [State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi' an 710072 (China)

    2010-01-15

    Platinum films were sputter-deposited on polished nickel alloy substrates. The platinum thin films were applied to serve as low-emissivity layers to reflect thermal radiation. The platinum-coated samples were then heated in the air at 600 deg. C to explore the effects of annealing time on the emissivity of platinum films. The results show that the grain size of the Pt films increased with the increasing annealing time while their dc electrical resistivity decreased. Besides, the IR emissivitiy of the films gradually decreased with the increasing annealing time. Especially, when the annealing time reached 150 h, the average IR emissivity at the wavelength of 3-14 {mu}m was only about 0.1. Moreover, the chemical analysis indicated that the Pt films on Ni-based alloy exhibit a good resistance against oxidation at 600 deg. C.

  5. Effects of annealing time on infrared emissivity of the Pt film grown on Ni alloy

    International Nuclear Information System (INIS)

    Platinum films were sputter-deposited on polished nickel alloy substrates. The platinum thin films were applied to serve as low-emissivity layers to reflect thermal radiation. The platinum-coated samples were then heated in the air at 600 deg. C to explore the effects of annealing time on the emissivity of platinum films. The results show that the grain size of the Pt films increased with the increasing annealing time while their dc electrical resistivity decreased. Besides, the IR emissivitiy of the films gradually decreased with the increasing annealing time. Especially, when the annealing time reached 150 h, the average IR emissivity at the wavelength of 3-14 μm was only about 0.1. Moreover, the chemical analysis indicated that the Pt films on Ni-based alloy exhibit a good resistance against oxidation at 600 deg. C.

  6. Post-annealing effects on ZnS thin films grown by using the CBD method

    Science.gov (United States)

    Ahn, Heejin; Um, Youngho

    2015-09-01

    Herein, the structural, morphological, and optical properties of zinc sulfide (ZnS) thin films deposited via the chemical bath deposition method are reported. These films were deposited on soda-lime glass (SLG) substrates by using ZnSO4, thiourea, and 25% ammonia at 90 °C. The effect of changing the annealing temperature from 100 °C to 300 °C on the properties of the ZnS thin films was investigated. X-ray diffraction (XRD) patterns showed that the ZnS thin film annealed at 100 °C had an amorphous structure; however, as the annealing temperature was increased, the crystalline quality of the thin film was enhanced. Moreover, transmission measurements showed that the optical transmittance was about 80% for wavelengths above 500 nm. The band gap energy (E g ) value of the film annealed at 300 °C was decreased to about 3.82 eV.

  7. Characterization of ZnO:Si nanocomposite films grown by thermal evaporation

    International Nuclear Information System (INIS)

    Composite films were fabricated by co-evaporating Zinc Oxide with Silicon at room temperatures. The resulting films had polycrystalline grains of Zinc Oxide whose grain size were few hundred nanometers, embedded in the silicon matrix. These nanocrystalline grains of ZnO showed good photoluminescence emission at 520 nm along with a photoluminescence emission at 620 nm being contributed by the silicon background. Thus, the nanocomposite films gave a board emission, making it a potentially useful candidate for optoelectronic devices. The photo-luminescent property of the films was found to be stable since the homgenously dispersed ZnO nanocrystals were not allowed to agglomerate by the silicon background

  8. Thermally driven stability of octadecylphosphonic acid thin films grown on SS316L.

    Science.gov (United States)

    Lim, Min Soo; Smiley, Katelyn J; Gawalt, Ellen S

    2010-01-01

    Stainless steel 316L is widely used as a biomedical implant material; however, there is concern about the corrosion of metallic implants in the physiological environment. The corrosion process can cause mechanical failure due to resulting cracks and cavities in the implant. Alkyl phosphonic acid forms a thin film by self-assembly on the stainless steel surface and this report conclusively shows that thermal treatment of the octadecylphosphonic acid (ODPA) film greatly enhances the stability of the ODPA molecules on the substrate surface. AFM images taken from the modified substrates revealed that thermally treated films remain intact after methanol, THF, and water flushes, whereas untreated films suffer substantial loss. Water contact angles also show that the hydrophobicity of thermally treated films does not diminish after being incubated in a dynamic flow of water for a 3-hour period, whereas the untreated film becomes increasingly hydrophilic due to loss of ODPA. IR spectra taken of both treated and untreated films after water and THF flushes show that the remaining film retains its initial crystallinity. A model is suggested to explain the stability of ODPA film enhanced by thermal treatment. An ODPA molecule is physisorbed to the surface weakly by hydrogen bonding. Heating drives away water molecules leading to the formation of strong monodentate or mixed mono/bi-dentate bonds of ODPA molecule to the surface. PMID:20648546

  9. Preparation and properties of YSZ-doped YBCO films grown by the TFA-MOD method

    International Nuclear Information System (INIS)

    YBa2Cu3O7-δ (YBCO) films with Zr doping have been prepared successfully by the trifluoroacetate metal-organic deposition (TFA-MOD) method through dissolving Zr acetylacetonate in the precursor solution. Yttria-stabilized zirconia (YSZ) nanoparticles were detected in the doped YBCO films by x-ray diffraction (XRD) and scanning electron microscopy (SEM). From the analysis of XRD ω and ψ scans, the doped films have better out-of-plane and in-plane textures than those of the un-doped YBCO film. Although the doped YBCO films have a lower critical transition temperature (Tc) than that of un-doped YBCO film, a very significant enhancement of critical current density (Jc) is displayed as compared to the un-doped film at high applied fields. A high Jc near 106 A cm-2 at 1 T and a Jc of 105 A cm-2 at 5 T were observed in 6% doped Zr film, which are 5 times and 25 times the Jc values of the un-doped film in the same applied fields, respectively, indicating an optimal defect density created by 6% Zr doping.

  10. Nucleation and Growth of MOCVD Grown (Cr, Zn)O Films – Uniform Doping vs. Secondary Phase Formation

    Energy Technology Data Exchange (ETDEWEB)

    Saraf, Laxmikant V.; Engelhard, Mark H.; Nachimuthu, Ponnusamy; Shutthanandan, V.; Wang, Chong M.; Heald, Steve M.; McCready, David E.; Lea, Alan S.; Baer, Donald R.; Chambers, Scott A.

    2007-01-17

    We report a detailed study of chromium solubility and secondary phase formation in MOCVD grown (Cr, Zn)O-based films on silicon (100). Simultaneous deposition of 0.15M Cr(TMHD) and 0.025M Zn(TMHD) based precursors in an oxidizing environment with a flow ratio of 1:10 resulted in secondary phase formation rather than uniform Cr doping. Based on several surface and micro-structural techniques, we have identified nano-crystalline ZnCr2O4 and disordered Cr2O3 as the secondary Cr-containing phases that nucleate. Analysis suggests that ZnCr2O4 crystallites are dispersed throughout the film and that disordered Cr2O3 layer may form at the interface. These results reveal a strong tendency for Cr to exist in octahedral, rather than tetrahedral coordination.

  11. Crystallographic and electronic contribution to the apparent step height in nanometer-thin Pb(111) films grown on Cu(111)

    Energy Technology Data Exchange (ETDEWEB)

    Calleja, Fabian; Parga, Amadeo L Vazquez de; Anglada, Eduardo; Hinarejos, Juan Jose; Miranda, Rodolfo; Yndurain, Felix [Departamento de Fisica de la Materia Condensada, Universidad Autonoma de Madrid, Cantoblanco 28049, Madrid (Spain)], E-mail: al.vazquezdeparga@uam.es

    2009-12-15

    Thermal roughening of Pb(111) films grown on Cu(111) produces three-dimensional (3D) islands of different number of layers allowing the simultaneous and direct measurement by scanning tunneling microscopy (STM) of the step height for different thicknesses in real space. The apparent step heights separating adjacent layers show several oscillations with amplitudes of up to 0.8-1.4 A around the bulk interlayer distance as a function of film thickness. The oscillations have bilayer periodicity with a superimposed longer beating period that produces a phase slip every eight layers. Based on first-principles calculations of Pb(111) free standing slabs, we can identify the relevant electronic states responsible for these quantum size effects. In addition, we can distinguish between geometric and electronic contributions to the apparent step heights measured on the STM images.

  12. Electrical property measurements of Cr-N codoped TiO2 epitaxial thin films grown by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Jacimovic, J [EPFL, Lausanne, Switzerland; Gaal, R [Institute of Condensed Matter Physics, EPFL, Lausanne, Switzerland; Magrez, Arnaud [ORNL; Forro, Laszlo [ORNL; Regmi, Murari [Oak Ridge National Laboratory (ORNL); Eres, Gyula [ORNL

    2013-01-01

    The temperature dependent resistivity and thermo-electric power of Cr-N codoped TiO2 were compared with that of single element N and Cr doped and undoped TiO2 using epitaxial anatase thin films grown by pulsed laser deposition on (100) LaAlO3 substrates. The resistivity plots and especially the thermoelectric power data confirm that codoping is not a simple sum of single element doping. However, the negative sign of the Seebeck coefficient indicates electron dominated transport independent of doping. The narrowing distinction among the effects of different doping methods combined with increasing resistivity of the films with improving crystalline quality of TiO2 suggest that structural defects play a critical role in the doping process.

  13. Fano interference of the Raman phonon in heavily boron-doped diamond films grown by chemical vapor deposition

    International Nuclear Information System (INIS)

    A series of boron-doped polycrystalline diamond films grown by direct current and microwave plasma deposition was studied with Raman and infrared (IR) absorption spectroscopy. A Fano line shape is observed in the Raman spectra for films with a boron concentration in a narrow range near 1021 cm-3. The appearance of the Fano line shape is correlated with the disappearance of discrete electronic transitions of the boron acceptor observed in the IR spectrum and the shift of the broadened peak to lower energy. The Fano interaction is attributed to a quantum mechanical interference between the Raman phonon (0.165 eV) and transitions from the broadened impurity band to continuum states composed of excited acceptor and valence band states

  14. Carbide-Derived Carbon Films for Integrated Electrochemical Energy Storage

    Science.gov (United States)

    Heon, Min

    Active RFID tags, which can communicate over tens or even hundreds of meters, MEMS devices of several microns in size, which are designed for the medical and pharmaceutical purposes, and sensors working in wireless monitoring systems, require microscale power sources that are able to provide enough energy and to satisfy the peak power demands in those applications. Supercapacitors have not been an attractive candidate for micro-scale energy storage, since most nanoporous carbon electrode materials are not compatible with micro-fabrication techniques and have failed to meet the requirements of high volumetric energy density and small form factor for power supplies for integrated circuits or microelectronic devices or sensors. However, supercapacitors can provide high power density, because of fast charging/discharging, which can enable self-sustaining micro-modules when combined with energy-harvesting devices, such as solar cell, piezoelectric or thermoelectric micro-generators. In this study, carbide-derived carbon (CDC) films were synthesized via vacuum decomposition of carbide substrates and gas etching of sputtered carbide thin films. This approach allowed manufacturing of porous carbon films on SiC and silicon substrates. CDC films were studied for micro-supercapacitor electrodes, and showed good double layer capacitance. Since the gas etching technique is compatible with conventional micro-device fabrication processes, it can be implemented to manufacture integrated on-chip supercapacitors on silicon wafers.

  15. Impact of low temperature annealing on structural, optical, electrical and morphological properties of ZnO thin films grown by RF sputtering for photovoltaic applications

    Science.gov (United States)

    Purohit, Anuradha; Chander, S.; Sharma, Anshu; Nehra, S. P.; Dhaka, M. S.

    2015-11-01

    This paper presents effect of low temperature annealing on the physical properties of ZnO thin films for photovoltaic applications. The thin films of thickness 50 nm were grown on glass and indium tin oxide (ITO) coated glass substrates employing radio frequency magnetron sputtering technique followed by thermal annealing within low temperature range 150-450 °C. These as-grown and annealed films were subjected to the X-ray diffraction (XRD), UV-Vis spectrophotometer, source meter and scanning electron microscopy (SEM) for structural, optical, electrical and surface morphological analysis respectively. The compositional analysis of the as-grown ZnO film was also carried out using energy dispersive spectroscopy (EDS). The XRD patterns reveal that the films have wurtzite structure of hexagonal phase with preferred orientation (1 0 0) and polycrystalline in nature. The crystallographic and optical parameters are calculated and discussed in detail. The optical band gap was found in the range 3.30-3.52 eV and observed to decrease with annealing temperature except 150 °C. The current-voltage characteristics show that the films exhibit approximately ohmic behavior. The SEM studies show that the films are uniform, homogeneous and free from crystal defects and voids. The experimental results reveal that ZnO thin films may be used as alternative materials for eco-friendly buffer layer to the thin film solar cell applications.

  16. Co-effects of amines molecules and chitosan films on in vitro calcium carbonate mineralization.

    Science.gov (United States)

    Cui, Jifei; Kennedy, John F; Nie, Jun; Ma, Guiping

    2015-11-20

    Amines monomers, N,N-dimethylaminoethyl methacrylate (DMAEMA), N,N-dimethylethanolamine (DMEA), 2-dimethylaminoethylamine (DMEDA) and N-methiyldiethanolamine (MDEA) were used to induce the formation of calcium carbonate (CaCO3) crystals on chitosan films, by using (NH4)2CO3 diffusion method at ambient temperature. The obtained CaCO3 particles were characterized by scanning electron microscope (SEM), X-ray diffraction (XRD) and Energy dispersive spectroscopy (EDS). The influence of reaction variables, such as the additive concentration and their types were also investigated on the products. The morphologies of CaCO3 crystals, inter-grown in cube-shape, were controlled by DMAEMA and DMEA. It was observed that the morphologies of CaCO3 changed from the cube grown arms to massive calcite with a hole on the face by increasing the concentrations of DMEDA and MDEA. While the precipitation grew on chitosan film without any organic additive, only single cube-shaped crystals were obtained. By these results the possible mechanisms can be proposed that electronic movement of the groups on the monomer effected ions configuration and molecules absorbed on the exposed surface, resulted the change of the surface energy, which caused the change in the morphology of CaCO3. PMID:26344256

  17. Selective synthesis of double helices of carbon nanotube bundles grown on treated metallic substrates

    Energy Technology Data Exchange (ETDEWEB)

    Cervantes-Sodi, Felipe; Iniguez-Rabago, Agustin; Rosas-Melendez, Samuel; Ballesteros-Villarreal, Monica [Departamento de Fisica y Matematicas, Universidad Iberoamericana, Prolongacion Paseo de la Reforma 880, Lomas de Santa Fe (Mexico); Vilatela, Juan J. [IMDEA Materials Institute, E.T.S. de Ingenieros de Caminos, Madrid (Spain); Reyes-Gutierrez, Lucio G.; Jimenez-Rodriguez, Jose A. [Ingenieria Industrial, Grupo JUMEX, Ecatepec de Morelos, Estado de Mexico (Mexico); Palacios, Eduardo [Lab. de Microscopia Electronica de Ultra Alta Resolucion, Instituto Mexicano del Petroleo, San Bartolo Atepehuacan (Mexico); Terrones, Mauricio [Department of Physics, Department of Materials Science and Engineering and Materials Research Institute, Pennsylvania State University, University Park, PA (United States); Research Center for Exotic Nanocarbons (JST), Shinshu University, Nagano (Japan)

    2012-12-15

    Double-helix microstructures consisting of two parallel strands of hundreds of multi-walled carbon nanotubes (MWCNTs) have been synthesized by chemical vapour deposition of ferrocene/toluene vapours on metal substrates. Growth of coiled carbon nanostructures with site selectivity is achieved by varying the duration of thermochemical pretreatment to deposit a layer of SiO{sub x} on the metallic substrate. Production of multibranched structures of MWCNTs converging in SiO{sub x} microstructure is also reported. In the abstract figure, panel (a) shows a coloured micrograph of a typical double-helix coiled microstructure of MWCNTs grown on SiO{sub x} covered steel substrate. Green and blue show each of the two individual strands of MWCNTs. Panel (b) is an amplification of a SiO{sub x} microparticle (white) on the tip of the double-stranded coil (green and blue). The microparticle guides the collective growth of hundreds of MWCNTs to form the coiled structure. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  18. Method and apparatus for making diamond-like carbon films

    Science.gov (United States)

    Pern, Fu-Jann; Touryan, Kenell J.; Panosyan, Zhozef Retevos; Gippius, Aleksey Alekseyevich

    2008-12-02

    Ion-assisted plasma enhanced deposition of diamond-like carbon (DLC) films on the surface of photovoltaic solar cells is accomplished with a method and apparatus for controlling ion energy. The quality of DLC layers is fine-tuned by a properly biased system of special electrodes and by exact control of the feed gas mixture compositions. Uniform (with degree of non-uniformity of optical parameters less than 5%) large area (more than 110 cm.sup.2) DLC films with optical parameters varied within the given range and with stability against harmful effects of the environment are achieved.

  19. Raman scattering of polycrystalline GaSb thin films grown by the co-evaporation process

    Institute of Scientific and Technical Information of China (English)

    Qiao Zai-Xiang; Sun Yun; He Wei-Yu; Liu Wei; He Qing; Li Chang-Jian

    2009-01-01

    This paper reports that GaSb thin films have been co-deposited on soda-lime glass substrates. The GaSb thin film structural properties are characterized by Raman spectroscopy. The Sb-A1g/GaSb-TO ratio decreases rapidly with the increase of substrate temperature, which suggests a small amount of crystalline Sb in the GaSb thin film and suggests that Sb atoms in the thin film decrease. In Raman spectra, the transverse optical (TO) mode intensity is stronger than that of the longitudinal optical (LO) mode, which indicates that all the samples arc disordered. The LO/TO intensity ratio increases with increasing substrate temperature which suggests the improved polycrystalline quality of the GaSb thin film. A downshift of the TO and LO frequencies of the polycrystalline GaSb thin film to single crystalline bulk GaSb Raman spectra is also observed. The uniaxial stress in GaSb thin film is calculated and the value is around 1.0 Gpa. The uniaxial stress decreases with increasing substrate temperature. These results suggest that a higher substrate temperature is beneficial in relaxing the stress in GaSb thin film.

  20. Terahertz and M4PP conductivity mapping of large area CVD grown graphene films

    DEFF Research Database (Denmark)

    Buron, Jonas Christian Due; Petersen, Dirch Hjorth; Bøggild, Peter;

    We demonstrate mapping of magnitude and variation of the electrical conductance of large area CVD graphene films by terahertz time-domain spectroscopy (THz-TDS) and micro four-point-probe (M4PP). Non-trivial correlations between results obtained with the two techniques are discussed in relation to...... electrical properties of the graphene films....

  1. Hafnium Oxide Thin films On Polymer Substrates Grown by Dual Ion Beam Sputtering

    International Nuclear Information System (INIS)

    Dual ion beam sputtering technique has been used to deposit hafnium oxide films on polycarbonate substrates. We have investigated the effect of deposition parameters on the residual stress and optical properties of these films. Residual stress values were obtained using the deflection method. Optical parameters including refractive index, extinction coefficient, and film thickness were determined from spectrophotometric measurements. The packing density was derived using the Kinosita Nishibori equation. The data reveal that densification process and compressive stress at the film/substrate interface are stimulated by the sputtering ion beam, being enhanced on increasing the sputtering ion beam current density. Moreover, the data shows that increasing the energy of the assisting ion beam causes an increase of the film packing density and refractive index. Whereas the residual stress shows a more complex behavior, changing from compressive to tensile to compressive, being compressive for films prepared without ion beam assistance. These results indicate the possibility of growing stress- free films of high packing density and desirable optical properties on plastic substrates. Such films are of high potential for an immense number of applications, specifically as antireflection coatings. A simple explanation of the results is proposed modal calculations, using Transport of Ions in Matter (TRIM) simulation show that the effect of the atoms sputtered from the target is comparable to that direct ion beam bombardment. (authors). 23 refs., 4 figs , 1 Tabs

  2. Structural and biological properties of carbon nanotube composite films

    Energy Technology Data Exchange (ETDEWEB)

    Narayan, Roger J. [School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0245 (United States)]. E-mail: roger.narayan@mse.gatech.edu; Berry, C.J. [Environmental Biotechnology Section, Savannah River National Laboratory, Aiken, SC 29808 (United States); Brigmon, R.L. [Environmental Biotechnology Section, Savannah River National Laboratory, Aiken, SC 29808 (United States)

    2005-11-20

    Carbon nanotube composite films have been developed that exhibit unusual structural and biological properties. These novel materials have been created by pulsed laser ablation of graphite and bombardment of nitrogen ions at temperatures between 600 and 700 deg. C. High-resolution transmission electron microscopy and radial distribution function analysis demonstrate that this material consists of sp{sup 2}-bonded concentric ribbons that are wrapped approximately 15 deg. normal to the silicon substrate. The interlayer order in this material extends to approximately 15-30 A. X-ray photoelectron spectroscopy and Raman spectroscopy data suggest that this material is predominantly trigonally coordinated. The carbon nanotube composite structure results from the use of energetic ions, which allow for non-equilibrium growth of graphitic planes. In vitro testing has revealed significant antimicrobial activity of carbon nanotube composite films against Staphylococcus aureus and Staphylococcus warneri colonization. Carbon nanotube composite films may be useful for inhibiting microorganism attachment and biofilm formation in hemodialysis catheters and other medical devices.

  3. Effect of CoSi2 buffer layer on structure and magnetic properties of Co films grown on Si (001) substrate

    International Nuclear Information System (INIS)

    Buffer layer provides an opportunity to enhance the quality of ultrathin magnetic films. In this paper, Co films with different thickness of CoSi2 buffer layers were grown on Si (001) substrates. In order to investigate morphology, structure, and magnetic properties of films, scanning tunneling microscope (STM), low energy electron diffraction (LEED), high resolution transmission electron microscopy (HRTEM), and surface magneto-optical Kerr effect (SMOKE) were used. The results show that the crystal quality and magnetic anisotropies of the Co films are strongly affected by the thickness of CoSi2 buffer layers. Few CoSi2 monolayers can prevent the interdiffusion of Si substrate and Co film and enhance the Co film quality. Furthermore, the in-plane magnetic anisotropy of Co film with optimal buffer layer shows four-fold symmetry and exhibits the two-jumps of magnetization reversal process, which is the typical phenomenon in cubic (001) films. (paper)

  4. Study of structural and optical properties of ZnO films grown by pulsed laser deposition

    International Nuclear Information System (INIS)

    Wurtzite zinc oxides films (ZnO) were deposited on silicon (0 0 1) and corning glass substrates using the pulsed laser deposition technique. The laser fluence, target-substrate distance, substrate temperature of 300 deg. C were fixed while varying oxygen pressures from 2 to 500 Pa were used. It is observed that the structural properties of ZnO films depend strongly on the oxygen pressure and the substrate nature. The film crystallinity improves with decreasing oxygen pressure. At high oxygen pressure, the films are randomly oriented, whereas, at low oxygen pressures they are well oriented along [0 0 1] axis for Si substrates and along [1 0 3] axis for glass substrates. A honeycomb structure is obtained at low oxygen pressures, whereas microcrystalline structures were obtained at high oxygen pressures. The effect of oxygen pressure on film transparency, band gap Eg and Urbach energies was investigated.

  5. Metastable fcc-Fe film epitaxially grown on Cu(100) single-crystal underlayer

    Science.gov (United States)

    Ohtake, Mitsuru; Shimamoto, Kohei; Futamoto, Masaaki

    2013-05-01

    Fe film of 40 nm thickness is prepared on fcc-Cu(100) single-crystal underlayer at room temperature by ultra-high vacuum molecular beam epitaxy. The film growth and the detailed structure are investigated by reflection high-energy electron diffraction, cross-sectional high-resolution transmission electron microscopy (HR-TEM), and x-ray diffraction (XRD). An Fe single-crystal with metastable fcc structure nucleates on the underlayer. The HR-TEM shows that fcc lattice is formed from the Fe/Cu interface up to the film surface. A large number of misfit dislocations are introduced around the Fe/Cu interface due to an accommodation of lattice mismatch. Dislocations exist up to the film near surface. The lattice constant is estimated by XRD to be a = 0.3607 nm. The film shows a ferromagnetic property, which reflects the property of fcc-Fe crystal with high-spin ferromagnetic state.

  6. Tribological properties of diamond films grown by plasma-enhanced chemical vapor deposition

    International Nuclear Information System (INIS)

    Uniform and continuous diamond films have been deposited on Si, Mo, and many other substrates by plasma-enhanced chemical vapor deposition. We have developed processes to enhance the adhesion of diamond films to metal substrates for tribological applications. The tribological properties of the diamond films are found to be significantly different depending on their morphology, grain size, and roughness. However, under all cases tested using a ring-on-block tribotester, it is found that for diamond films with a small grain size of 1--3 μm, the coefficient of friction of the diamond films sliding against a steel ring under lubrication of a jet of mineral oil is about 0.04

  7. Properties of CdTe nanocrystalline thin films grown on different substrates by low temperature sputtering

    Institute of Scientific and Technical Information of China (English)

    Chen Huimin; Guo Fuqiang; Zhang Baohua

    2009-01-01

    CdTe nanocrystalline thin films have been prepared on glass, Si and Al2O3 substrates by radio-frequency magnetron sputtering at liquid nitrogen temperature. The crystal structure and morphology of the films were characterized by X-ray diffraction (XRD) and field-emission scanning electron microscopy (FESEM). The XRD examinations revealed that CdTe films on glass and Si had a better crystal quality and higher preferential orientation along the (111) plane than the Al2O3. FESEM observations revealed a continuous and dense morphology of CdTe films on glass and Si substrates. Optical properties of nanocrystalline CdTe films deposited on glass substrates for different deposited times were studied.

  8. Critical thickness and strain relaxation in molecular beam epitaxy-grown SrTiO{sub 3} films

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Tianqi; Ganguly, Koustav; Marshall, Patrick; Xu, Peng; Jalan, Bharat [Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455 (United States)

    2013-11-18

    We report on the study of the critical thickness and the strain relaxation in epitaxial SrTiO{sub 3} film grown on (La{sub 0.3}Sr{sub 0.7})(Al{sub 0.65}Ta{sub 0.35})O{sub 3} (001) (LSAT) substrate using the hybrid molecular beam epitaxy approach. No change in the film's lattice parameter (both the in-plane and the out-of-plane) was observed up to a film thickness of 180 nm, which is in sharp contrast to the theoretical critical thickness of ∼12 nm calculated using the equilibrium theory of strain relaxation. For film thicknesses greater than 180 nm, the out-of-plane lattice parameter was found to decrease hyperbolically in an excellent agreement with the relaxation via forming misfit dislocations. Possible mechanisms are discussed by which the elastic strain energy can be accommodated prior to forming misfit dislocations leading to such anomalously large critical thickness.

  9. Growth parameters effect on the electric and thermoelectric characteristics of Bi 2Se 3 thin films grown by MOCVD system

    Science.gov (United States)

    Al Bayaz, A.; Giani, A.; Artaud, M. C.; Foucaran, A.; Pascal-Delannoy, F.; Boyer, A.

    2002-06-01

    Bi 2Se 3 thin films were grown by metal organic chemical vapour deposition (MOCVD) on pyrex substrate in an horizontal reactor using Trimethylbismuth (TMBi) and Diethylselinium (DESe) as metal-organic sources. The effect of the growth parameters such as substrate temperature, Tg, and TMBi partial pressure, PTMBi, on the structural, electrical and thermoelectrical properties of Bi 2Se 3 films, has been investigated. We noticed that a high growth temperature is very important for a good orientation of crystallites, which can be directly related to the best values of Hall mobility and Seebeck coefficient found. Therefore, a large stability of the reactions over the substrates with following growth conditions: 455°C⩽ Tg⩽485°C,0.5×10 -4⩽ PTMBi⩽1×10 -4 atm and a total hydrogen flow rate DT=3 slm, is achieved. In these optimal growth conditions, we found a better crystalline structure of Bi 2Se 3 thin films using X-ray diffraction. Thus, these layers always displayed n-type conduction using Hall effect, with carrier concentration close to 2×10 19 cm -3 and maximum values of Hall mobility and Seebeck coefficient of μ=247 cm 2/V s and | α|=120 μV/K respectively. Then, these films appear to be very promising for thermoelectric applications.

  10. Surfactant controlled switching of water-in-oil wetting behaviour of porous silica films grown at oil-water interfaces

    Indian Academy of Sciences (India)

    Manish M Kulkarni; Rajdip Bandyopadhyaya; Ashutosh Sharma

    2008-11-01

    Selective permeation of oil and water across a porous medium, as in oil recovery operations, depends on the preferential wetting properties of the porous medium. We show a profound influence of surfactants in wetting of porous media and thus demonstrate a new route for the control of water-in-oil wetting of porous substrates by changing the concentration of surfactants in an aqueous sub-phase below the substrate. This strategy is employed to engineer partial reversible wetting transitions on a porous silica film. The film itself is grown and stabilized on a flat, macroscopic interface between an oil phase and an aqueous sub-phase. On increasing the surfactant (CTAB) concentration in the sub-phase, contact angle of a water drop (placed on the oil side of the film) changes from 140° to 16° in 25 min by diffusion of the surfactant across the porous film. On further replacement of the sub-phase with pure water, diffusion of the surfactant from the water drop back to the sub-phase was slower, increasing the contact angle in the process from 16° to 90° in 2 h. Wettability control by a cationic surfactant (CTAB) was found to be much faster (6 deg/min) than that offered by an anionic surfactant, SDS (0.05 deg/min). Switching of the surface wettability due to the surfactant diffusion may have implications in oil-water separation, chemical bed reactors and microfluidic devices.

  11. The irradiation studies on diamond-like carbon films

    CERN Document Server

    LiuGuIang; Xie Er Qin

    2002-01-01

    Diamond-like carbon (DLC) films have been deposited on glass substrates using radio-frequency (r.f.) plasma deposition method. gamma-ray, ultraviolet (UV) ray and neutron beam were used to irradiate the DLC films. Raman spectroscopy and infrared (IR) spectroscopy were used to characterize the changing characteristics of SP sup 3 C-H bond and hydrogen content in the films due to the irradiations. It showed that, the damage degrees of the gamma-ray, UV ray and neutron beam on the SP sup 3 C-H bonds are different. Among them, the damage of gamma-ray on the SP sup 3 C-H bond is the weakest. When the irradiation dose of gamma-ray reaches 10x10 sup 4 Gy, the SP sup 3 C-H bond reduces about 50% in number. The square resistance of the films is reduced due to the irradiation of UV ray and this is caused by severe oxidation of the films. Compared with that of the as-deposited one, the IR transmittance of the films irradiated by both gamma-ray and neutron beam is increased to some extent. By using the results on optical...

  12. Growth, Nitrogen Uptake and Carbon Isotope Discrimination in Barley Genotypes Grown under Saline Conditions

    Directory of Open Access Journals (Sweden)

    Kurdali Fawaz

    2012-08-01

    Full Text Available The effect of different salinity levels of irrigation water (ECw range 1-12 dS/m on dry matter yield, nitrogen uptake, fertilizer nitrogen use efficiency (%NUE, stomatal conductance and carbon isotope discrimination (Δ13C‰ in three barley genotypes originating from different geographic areas (Arabi.Abiad, Syria; Pk-30-136, Pakistan and WI-2291, Australia was investigated in a pot experiment. An increase in salinity resulted in a decrease in Δ13C in all the genotypes. Increasing salinity reduced leaf stomatal conductance which was less pronounced in WI-2291 comparing to other genotypes. At high salinity level, the reduction in Δ13C corresponded to a considerable decrease in the ratio (Ci/Ca of intercellular (Ci and atmospheric (Ca partial pressures of CO2 in all the genotypes indicating that such a decrease was mainly due to the stomatal closure. Moreover, since the reduction in dry matter yield in all the genotypes grown at 12 dS/m did not exceed 50% in comparison with their controls, the photosynthetic apparatus of all studied genotypes seemed to be quit tolerant to salinity. At the moderate salinity level (8 dS/m, the enhancement of leaf dry matter yield in the WI2291 genotype might have been due to positive nutritional effects of the salt as indicated by a significant increase in nitrogen uptake and NUE. Thus, the lower Ci/Ca ratio could result mainly from higher rates of photosynthetic capacity rather than stomatal closure. On the other hand, relationships between dry matter yield or NUE and Δ13C seemed to be depending on plant genotype, plant organ and salinity level. Based on growth, nutritional and Δ13C data, selection of barley genotypes for saline environments was affected by salinity level. Therefore, such a selection must be achieved for each salinity level under which the plants have been grown.

  13. Random lasing of ZnO thin films grown by pulsed-laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Cachoncinlle, C., E-mail: christophe.cachoncinlle@univ-orleans.fr [GREMI, UMR 7344 CNRS—Université Orléans, 45067 Orléans Cedex 2 (France); Hebert, C.; Perrière, J. [Sorbonne Universités, UPMC Université Paris 06, UMR 7588, INSP, 75005 Paris (France); CNRS, UMR 7588, INSP, 75005 Paris (France); Nistor, M. [NILPRP, L 22 PO Box. MG-36, 77125 Bucharest—Magurele (Romania); Petit, A.; Millon, E. [GREMI, UMR 7344 CNRS—Université Orléans, 45067 Orléans Cedex 2 (France)

    2015-05-01

    Highlights: • Random lasing at RT in nanocrystalline ZnO PLD thin film (<100 nm). • Low optical pumping threshold (<30 kW cm{sup −2}) for UV random lasing. • Random lasing interpreted by the electron-hole plasma (EHP) model. - Abstract: Low-dimensional semiconductor structures on nanometer scale are of great interest because of their strong potential applications in nanotechnologies. We report here optical and structural properties on UV lasing in ZnO thin films. The ZnO films, 110 nm thick, were prepared using pulsed-laser deposition on c-cut sapphire substrates at 500 °C under 10{sup −2} oxygen pressure. The ZnO films are nearly stoichiometric, dense and display the wurtzite phase. The films are highly textured along the ZnO c-axis and are constituted of nanocrystallites. According to Hall measurements these films are conductive (0.11 Ω cm). Photoluminescence measurements reveals a so-called random lasing in the range 390 to 410 nm, when illuminating at 355 nm with a tripled frequency pulsed Nd-YAG laser. Such random lasing is obtained at rather low optical pumping, 45 kW cm{sup −2}, a value lower than those classically reported for pulsed-laser deposition thin films.

  14. Polycrystalline SrFe12O19 thin films grown by pulsed laser deposition

    Science.gov (United States)

    Garcia, Tupac; de Posada, E.; Jimenez, Ernesto; Sanchez Ll., J. L.; Diaz Castanon, S.; Bartolo-Perez, Pascual; Cauich, W.; Oliva, I.; Pena, J. L.; Ceh, O.

    1999-07-01

    Polycrystalline SrFe12O19 thin films were deposited on Si (100) substrates by PLD using a Nd-YAG laser ((lambda) equals 1064 nm). During the deposition process substrates were kept at room temperature. As-deposited films were annealed in air at temperatures between 600 degree(s)C and 840 degree(s)C. Samples were characterized by AES, ESCA, SEM, AFM, x-ray diffraction and VSM. It is presented the relevance of the preparation of the target surface on the film quality. Some differences in the chemical composition of as-deposited films, compared with the target and the annealed films, were observed. The x-ray diffraction spectra show a textured as- deposited films. Samples annealed at 600 degree(s)C, and below, showed a very weak magnetic response. In contrast annealing in the temperature range 700 degree(s)C - 840 degree(s)C led to the formation of a nanocrystalline particle system (average particle size 150 - 350 nm) which behave as a single domain in the thermally demagnetized state. The obtained coercivities (5750 - 6850 Oe) are among the highest values reported for films, powders and sintered samples.

  15. Characterization of ZnO thin films grown on different p-Si substrate elaborated by solgel spin-coating method

    Energy Technology Data Exchange (ETDEWEB)

    Chebil, W., E-mail: Chbil.widad@live.fr [Laboratoire Physico-chimie des Matériaux, Unité de Service Commun de Recherche “High resolution X-ray diffractometer”, Département de Physique, Université de Monastir, Faculté des Sciences de Monastir, Avenue de l’Environnement, 5019 Monastir (Tunisia); Fouzri, A. [Laboratoire Physico-chimie des Matériaux, Unité de Service Commun de Recherche “High resolution X-ray diffractometer”, Département de Physique, Université de Monastir, Faculté des Sciences de Monastir, Avenue de l’Environnement, 5019 Monastir (Tunisia); Institut Supérieur des Sciences Appliquées et de Technologie de Sousse, Université de Sousse (Tunisia); Fargi, A. [Laboratoire de Microélectronique et Instrumentation, Faculté des Sciences de Monastir, Université de Monastir, Avenue de l’environnement, 5019 Monastir (Tunisia); Azeza, B.; Zaaboub, Z. [Laboratoire Micro-Optoélectroniques et Nanostructures, Faculté des Sciences de Monastir, Université de Monastir, Avenue de l' environnement, 5019 Monastir (Tunisia); and others

    2015-10-15

    Highlights: • High quality ZnO thin films grown on different p-Si substrates were successful obtained by sol–gel process. • PL measurement revealed that ZnO thin film grown on porous Si has the better optical quality. • I–V characteristics for all heterojunctions exhibit successful diode formation. • The diode ZnO/PSi shows a better photovoltaic effect under illumination with a maximum {sub Voc} of 0.2 V. - Abstract: In this study, ZnO thin films are deposited by sol–gel technique on p-type crystalline silicon (Si) with [100] orientation, etched silicon and porous silicon. The structural analyses showed that the obtained thin films were polycrystalline with a hexagonal wurtzite structure and preferentially oriented along the c-axis direction. Morphological study revealed the presence of rounded and facetted grains irregularly distributed on the surface of all samples. PL spectra at room temperature revealed that ZnO thin film grown on porous Si has a strong UV emission with low defects in the visible region comparing with ZnO grown on plat Si and etched Si surface. The heterojunction parameters were evaluated from the (I–V) under dark and illumination at room temperature. The ideality factor, barrier height and series resistance of heterojunction grown on different p-Si substrates are determined by using different methods. Best electrical properties are obtained for ZnO layer deposited on porous silicon.

  16. Ultrathin diamond-like carbon films deposited by filtered carbon vacuum arcs

    Energy Technology Data Exchange (ETDEWEB)

    Anders, Andre; Fong, Walton; Kulkarni, Ashok; Ryan, Francis W.; Bhatia, C. Singh

    2001-07-13

    Ultrathin (< 5 nm) hard carbon films are of great interest to the magnetic storage industry as the areal density approaches 100 Gbit/in{sup 2}. These films are used as overcoats to protect the magnetic layers on disk media and the active elements of the read-write slider. Tetrahedral amorphous carbon films can be produced by filtered cathodic arc deposition, but the films will only be accepted by the storage industry only if the ''macroparticle'' issue has been solved. Better plasma filters have been developed over recent years. Emphasis is put on the promising twist filter system - a compact, open structure that operates with pulsed arcs and high magnetic field. Based on corrosion tests it is shown that the macroparticle reduction by the twist filter is satisfactory for this demanding application, while plasma throughput is very high. Ultrathin hard carbon films have been synthesized using S-filter and twist filter systems. Film properties such as hardness, elastic modulus, wear, and corrosion resistance have been tested.

  17. High electron mobility thin-film transistors based on Ga{sub 2}O{sub 3} grown by atmospheric ultrasonic spray pyrolysis at low temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Thomas, Stuart R., E-mail: s.thomas09@imperial.ac.uk, E-mail: thomas.anthopoulos@imperial.ac.uk; Lin, Yen-Hung; Faber, Hendrik; Anthopoulos, Thomas D., E-mail: s.thomas09@imperial.ac.uk, E-mail: thomas.anthopoulos@imperial.ac.uk [Department of Physics, Blackett Laboratory, Imperial College London, London SW7 2BW (United Kingdom); Adamopoulos, George [Department of Engineering, Engineering Building, Lancaster University, Bailrigg, Lancaster LA1 4YR (United Kingdom); Sygellou, Labrini [Institute of Chemical Engineering and High Temperature Processes (ICEHT), Foundation of Research and Technology Hellas (FORTH), Stadiou Strasse Platani, P.O. Box 1414, Patras GR-265 04 (Greece); Stratakis, Emmanuel [Institute of Electronic Structure and Laser (IESL), Foundation for Research and Technology-Hellas (FORTH), Heraklion 71003 (Greece); Materials Science and Technology Department, University, of Crete, Heraklion 71003 (Greece); Pliatsikas, Nikos; Patsalas, Panos A. [Laboratory of Applied Physics, Department of Physics, Aristotle University of Thessaloniki, Thessaloniki GR-54124 (Greece)

    2014-09-01

    We report on thin-film transistors based on Ga{sub 2}O{sub 3} films grown by ultrasonic spray pyrolysis in ambient atmosphere at 400–450 °C. The elemental, electronic, optical, morphological, structural, and electrical properties of the films and devices were investigated using a range of complementary characterisation techniques, whilst the effects of post deposition annealing at higher temperature (700 °C) were also investigated. Both as-grown and post-deposition annealed Ga{sub 2}O{sub 3} films are found to be slightly oxygen deficient, exceptionally smooth and exhibit a wide energy bandgap of ∼4.9 eV. Transistors based on as-deposited Ga{sub 2}O{sub 3} films show n-type conductivity with the maximum electron mobility of ∼2 cm{sup 2}/V s.

  18. Schottky Junction Methane Sensors Using Electrochemically Grown Nanocrystalline-Nanoporous ZnO Thin Films

    Directory of Open Access Journals (Sweden)

    P. K. Basu

    2009-01-01

    Full Text Available Nanocrystalline-nanoporous ZnO thin films were prepared by an electrochemical anodization method, and the films were tested as methane sensors. It was found that Pd-Ag catalytic contacts showed better sensing performance compared to other noble metal contacts like Pt and Rh. The methane sensing temperature could be reduced to as low as 100∘C by sensitizing nanocrystalline ZnO thin films with Pd, deposited by chemical method. The sensing mechanism has been discussed briefly.

  19. High-quality, faceted cubic boron nitride films grown by chemical vapor deposition

    Science.gov (United States)

    Zhang, W. J.; Jiang, X.; Matsumoto, S.

    2001-12-01

    Thick cubic boron nitride (cBN) films showing clear crystal facets were achieved by chemical vapor deposition. The films show the highest crystallinity of cBN films ever achieved from gas phase. Clear evidence for the growth via a chemical route is obtained. A growth mechanism is suggested, in which fluorine preferentially etches hBN and stabilizes the cBN surface. Ion bombardment of proper energy activates the cBN surface bonded with fluorine so as to enhance the bonding probability of nitrogen-containing species on the F-stabilized B (111) surface.

  20. Amorphization and recrystallization of epitaxial ReSi2 films grown on Si(100)

    Science.gov (United States)

    Kim, Kun HO; Bai, G.; Nicolet, MARC-A.; Mahan, John E.; Geib, Kent M.

    1991-01-01

    The effects of implantation damage and the chemical species of the implant on structural and electrical properties of epitaxial ReSi2 films on Si(100) implanted with Si-28 or Ar-40 ions, at doses ranging from 10 to the 13th/sq cm to 10 to the 15th/sq cm, were investigated using the backscattering spectrometry, XRD, and the van der Pauw techniques. Results showed that ion implantation produces damage in the film, which increases monotonically with dose; the resistivity of the film decreases monotonically with dose.

  1. Properties of CdS thin films grown by CBD as a function of thiourea concentration

    Energy Technology Data Exchange (ETDEWEB)

    Ximello-Quiebras, J.N.; Contreras-Puente, G.; Rueda-Morales, G.; Vigil, O. [Escuela Superior de Fisica y Matematicas-Instituto Politecnico Nacional, Edificio 9, U.P.A.L.M. 07738 DF (Mexico); Santana-Rodriguez, G. [Instituto de Investigaciones en Materiales, UNAM, CP 04510 (Mexico DF); Morales-Acevedo, A. [CINVESTAV-IPN, Depto. Ingenieria Electrica-SEES, Av. IPN 2508,CP 07360 Mexico, DF (Mexico)

    2006-04-14

    This paper reports a study of the growth rate and optical properties of CdS thin films prepared by the chemical bath deposition technique. For the deposition an aqueous solution of cadmium chloride, ammonium chloride, ammonium hydroxide and thiourea were used, the films were deposited on conducting glass (SnO{sub 2}: F). The growth kinetics is relatively fast when the quantity of thiourea is increased in the deposition solution and higher value of band gap is obtained (E{sub g}=2.44eV). The films show good transmittance in the visible region. (author)

  2. Silicon carbide thin films as nuclear ceramics grown by laser ablation

    Energy Technology Data Exchange (ETDEWEB)

    Filipescu, M., E-mail: morarm@nipne.ro [National Institute for Laser, Plasma and Radiation Physics, P.O. Box MG 16, RO 77125, Magurele - Bucharest (Romania); Velisa, G. [Horia Hulubei National Institute of Physics and Nuclear Engineering, P.O.BOX MG-6, Bucharest - Magurele (Romania); Ion, V.; Andrei, A. [National Institute for Laser, Plasma and Radiation Physics, P.O. Box MG 16, RO 77125, Magurele - Bucharest (Romania); Scintee, N.; Ionescu, P. [Horia Hulubei National Institute of Physics and Nuclear Engineering, P.O.BOX MG-6, Bucharest - Magurele (Romania); Stanciu, S.G. [Center for Microscopy- Microanalysis and Information Processing, University ' POLITEHNICA' of Bucharest, Bucharest (Romania); Pantelica, D. [Horia Hulubei National Institute of Physics and Nuclear Engineering, P.O.BOX MG-6, Bucharest - Magurele (Romania); Dinescu, M. [National Institute for Laser, Plasma and Radiation Physics, P.O. Box MG 16, RO 77125, Magurele - Bucharest (Romania)

    2011-09-01

    Silicon carbide has been identified as a potential inert matrix candidate for advanced fuel. In this work, the growth of SiC thin films by pulsed laser deposition is reported. The stoicheometry and thickness of deposited films was investigated by non-Rutherford backscattering spectrometry. The influence of the deposition parameters, i.e. substrate temperature and laser fluence on the structure, morphology and optical properties of the deposited thin layers was studied. It was found that polycrystalline SiC thin films with uniform surface morphology were obtained at 873 K.

  3. Charge transport and magnetic ordering in laser ablated Co2FeSi thin films epitaxially grown on (1 0 0) SrTiO3

    International Nuclear Information System (INIS)

    We have successfully deposited epitaxial thin films of the Heusler alloy Co2FeSi on (1 0 0) cut SrTiO3 single crystal substrates by pulsed laser deposition. X-ray diffraction reveals the L21 cubic crystal structure for the films grown at 400 and 600 0C, with a better crystallographic quality at the higher growth temperature. The magnetic moment in saturation of the 600 0C grown film is 5.0 μB/fu at 5 K with the easy axis of magnetization in the (1 0 0) plane. Inplane hysteresis measurements suggest a soft magnetic state with a coercive field HC ∼ 250 Oe at 5 K for the 600 0C film which decreases on lowering the growth temperature. The normalized magnetization of thin films follows the well-known Bloch T3/2 law due to spin wave excitation. Electrical resistivity measurements on the films with the L21 crystal structure show a pronounced metallic behaviour down to the lowest temperature of measurement (∼5 K), and enhanced metallicity in the 600 0C film as indicated by its lower residual resistivity (∼0.16 μΩ cm) and higher residual resistivity ratio (RRR ∼ 1280). These results suggest that films grown at the higher temperature may be better suited for the fabrication of magnetic tunnel junctions.

  4. Crack-free and scalable transfer of carbon nanotube arrays into flexible and highly thermal conductive composite film.

    Science.gov (United States)

    Wang, Miao; Chen, Hongyuan; Lin, Wei; Li, Zhuo; Li, Qiang; Chen, Minghai; Meng, Fancheng; Xing, Yajuan; Yao, Yagang; Wong, Ching-ping; Li, Qingwen

    2014-01-01

    Carbon nanotube (CNT) arrays show great promise in developing anisotropic thermal conductive composites for efficiently dissipating heat from high-power devices along thickness direction. However, CNT arrays are always grown on some substrates and liable to be deformed and broken into pieces during transfer and solution treatment. In the present study, we intentionally synthesized well-crystallized and large-diameter (~80 nm) multiwalled CNT (MWCNT) arrays by floating catalyst chemical vapor deposition (FCCVD) method. Such arrays provided high packing density and robust structure from collapse and crack formation during post solution treatment and therefore favored to maintain original thermal and electrical conductive paths. Under optimized condition, the CNT arrays can be transferred into flexible composite films. Furthermore, the composite film also exhibited excellent thermal conductivity at 8.2 W/(m·K) along thickness direction. Such robust, flexible, and highly thermal conductive composite film may enable some prospective applications in advanced thermal management.

  5. Optical Properties of Pyrolytic Carbon Films Versus Graphite and Graphene.

    Science.gov (United States)

    Dovbeshko, Galyna I; Romanyuk, Volodymyr R; Pidgirnyi, Denys V; Cherepanov, Vsevolod V; Andreev, Eugene O; Levin, Vadim M; Kuzhir, Polina P; Kaplas, Tommi; Svirko, Yuri P

    2015-12-01

    We report a comparative study of optical properties of 5-20 nm thick pyrolytic carbon (PyC) films, graphite, and graphene. The complex dielectric permittivity of PyC is obtained by measuring polarization-sensitive reflectance and transmittance spectra of the PyC films deposited on silica substrate. The Lorentz-Drude model describes well the general features of the optical properties of PyC from 360 to 1100 nm. By comparing the obtained results with literature data for graphene and highly ordered pyrolytic graphite, we found that in the visible spectral range, the effective dielectric permittivity of the ultrathin PyC films are comparable with those of graphite and graphene.

  6. Thin-Film Solar Cells with InP Absorber Layers Directly Grown on Nonepitaxial Metal Substrates

    KAUST Repository

    Zheng, Maxwell

    2015-08-25

    The design and performance of solar cells based on InP grown by the nonepitaxial thin-film vapor-liquid-solid (TF-VLS) growth technique is investigated. The cell structure consists of a Mo back contact, p-InP absorber layer, n-TiO2 electron selective contact, and indium tin oxide transparent top electrode. An ex situ p-doping process for TF-VLS grown InP is introduced. Properties of the cells such as optoelectronic uniformity and electrical behavior of grain boundaries are examined. The power conversion efficiency of first generation cells reaches 12.1% under simulated 1 sun illumination with open-circuit voltage (VOC) of 692 mV, short-circuit current (JSC) of 26.9 mA cm-2, and fill factor (FF) of 65%. The FF of the cell is limited by the series resistances in the device, including the top contact, which can be mitigated in the future through device optimization. The highest measured VOC under 1 sun is 692 mV, which approaches the optically implied VOC of ≈795 mV extracted from the luminescence yield of p-InP. The design and performance of solar cells based on indium phosphide (InP) grown by the nonepitaxial thin-film vapor-liquid-solid growth technique is investigated. The cell structure consists of a Mo back contact, p-InP absorber layer, n-TiO2 electron selective contact, and an indium tin oxide transparent top electrode. The highest measured open circuit voltage (VOC) under 1 sun is 692 mV, which approaches the optically implied VOC of ≈795 mV extracted from the luminescence yield of p-InP.

  7. Ion beam deposition of amorphous carbon films with diamond like properties

    Science.gov (United States)

    Angus, John C.; Mirtich, Michael J.; Wintucky, Edwin G.

    1982-01-01

    Carbon films were deposited on silicon, quartz, and potassium bromide substrates from an ion beam. Growth rates were approximately 0.3 micron/hour. The films were featureless and amorphous and contained only carbon and hydrogen in significant amounts. The density and carbon/hydrogen ratio indicate the film is a hydrogen deficient polymer. One possible structure, consistent with the data, is a random network of methylene linkages and tetrahedrally coordinated carbon atoms.

  8. Films, Buckypapers and Fibers from Clay, Chitosan and Carbon Nanotubes

    Directory of Open Access Journals (Sweden)

    Marc in het Panhuis

    2011-04-01

    Full Text Available The mechanical and electrical characteristics of films, buckypapers and fiber materials from combinations of clay, carbon nanotubes (CNTs and chitosan are described. The rheological time-dependent characteristics of clay are maintained in clay–carbon nanotube–chitosan composite dispersions. It is demonstrated that the addition of chitosan improves their mechanical characteristics, but decreases electrical conductivity by three-orders of magnitude compared to clay–CNT materials. We show that the electrical response upon exposure to humid atmosphere is influenced by clay-chitosan interactions, i.e., the resistance of clay–CNT materials decreases, whereas that of clay–CNT–chitosan increases.

  9. Carbon Nanotube Film-Based Speaker Developed in Tsinghua University

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    @@ A research group from Tsinghua University led by Prof.Fan Shoushan,Member of the Chinese Academy of Sciences,and Jiang Kaili,associate professor of Physics,found that carbon nanotube thin film could act as a speaker once fed by audio frequency electric currents.These carbon nanotube loudspeakers are only tens of a nanometer thick,transparent,flexible and stretchable,which can be further tailored into any shape and size.These results have been published in the journal Nano Letter.

  10. Extraordinary self-lubrication properties of non-hydrogenated diamond-like carbon films under humid atmosphere

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    Tribological properties of non-hydrogenated diamond-like carbon (DLC) films were investigated under humid (RH=80%) and dry (RH=5%) air. These films were deposited by pulsed laser deposition (PLD) at different substrate temperatures. Tribological properties of DLC fabricated by PLD is not sensitive to the relative humidity of testing environment. Because of the unique growth mechanism of DLC pre- pared by PLD, DLC is of "soft-hard" double layers, having a very low friction coefficient and wear rate under humid atmosphere. The minimum coefficient and wear rate of film under humid circumstance are 0.045 and 5.94×10?10 mm3N-1m-1, respectively, just a little bit more than those under dry condition. The root means square roughness of film is less than 1 nm. The sp3 content of film grown at room tem- perature (RT) is 72%, and the sp3 content decreases with temperature. Raman spectrum shows that the micro-structure is amorphous network. The largest hardness and elastic modulus of film are 51 GPa and 350 GPa, respectively and they reduce with increase of deposition temperature too. Water contact angles on surface are more than 90° which indicates that films fabricated by PLD are hydrophobic with low surface energy.

  11. Layer-dependent supercapacitance of graphene films grown by chemical vapor deposition on nickel foam

    KAUST Repository

    Chen, Wei

    2013-03-01

    High-quality, large-area graphene films with few layers are synthesized on commercial nickel foams under optimal chemical vapor deposition conditions. The number of graphene layers is adjusted by varying the rate of the cooling process. It is found that the capacitive properties of graphene films are related to the number of graphene layers. Owing to the close attachment of graphene films on the nickel substrate and the low charge-transfer resistance, the specific capacitance of thinner graphene films is almost twice that of the thicker ones and remains stable up to 1000 cycles. These results illustrate the potential for developing high-performance graphene-based electrical energy storage devices. © 2012 Elsevier B.V. All rights reserved.

  12. Advanced functional oxide thin films grown by pulsed-laser deposition

    International Nuclear Information System (INIS)

    Pulsed-laser deposition is now a largely used growth method to prepare functional and multifunctional oxide films for application in microelectronics, spintronics, optics, materials for energy… The functional properties of such oxide films are strongly depending on the crystalline structure, and on the chemical composition through the local environment of cationic species surrounded by oxygen. While large oxygen deficiency cannot be obtained by classical growth method or in bulk state, oxide films with a high content of oxygen vacancies may be obtained by PLD. For oxide systems presenting possible stable sub-oxides, the formation of oxygen vacancies is linked to a decrease of the cationic valence state. A complete reduction can be observed leading to particular electronic properties: the case of TiOx (1.5 2Ox (2.1 < x < 3) films and their related physical (electrical and optical) properties are discussed.

  13. High-Mobility Aligned Pentacene Films Grown by Zone-Casting

    DEFF Research Database (Denmark)

    Duffy, Claudia M.; Andreasen, Jens Wenzel; Breiby, Dag W.;

    2008-01-01

    We investigate the growth and field-effect transistor performance of aligned pentacene thin films deposited by zone-casting from a solution of unsubstituted pentacene molecules in a chlorinated solvent. Polarized optical microscopy shows that solution processed pentacene films grow as large...... crystalline domains with pronounced anisotropy in the substrate plane, in contrast to vacuum sublimed pentacene films, which consist of small crystalline grains with random in-plane orientation. The high structural alignment is confirmed by in-plane and out-of-plane X-ray diffraction analysis, with out...... devices depends strongly on the underlying dielectric. Divinylsiloxane-bis-benzocyclobutene (BCB) resin is found to be a suitable gate dielectric allowing reproducible film deposition and high field-effect mobilities up to 0.4−0.7 cm2/(V s) and on/off ratios of 106−107. A small mobility anisotropy...

  14. Synthesis and characterization of carbon nanotube reinforced copper thin films

    OpenAIRE

    Otto, Cornelia

    2006-01-01

    Two model composites of copper and carbon nanotubes were fabricated by very different deposition methods. Copper electrodeposition in a plating bath containing nanotubes created a 3D matrix of randomly oriented CNTs within a thick, 20 micron Cu film. In contrast, sandwiching a layer of well-separated nanotubes between two sub-micron sputtered Cu layers produced a 2D-composite with nanotubes lying parallel to the substrate surface. These composites, which were mechanically tested using var...

  15. Photoluminescence and Raman Spectroscopy Studies of Carbon Nitride Films

    Directory of Open Access Journals (Sweden)

    J. Hernández-Torres

    2016-01-01

    Full Text Available Amorphous carbon nitride films with N/C ratios ranging from 2.24 to 3.26 were deposited by reactive sputtering at room temperature on corning glass, silicon, and quartz as substrates. The average chemical composition of the films was obtained from the semiquantitative energy dispersive spectroscopy analysis. Photoluminescence measurements were performed to determine the optical band gap of the films. The photoluminescence spectra displayed two peaks: one associated with the substrate and the other associated with CNx films located at ≈2.13±0.02 eV. Results show an increase in the optical band gap from 2.11 to 2.15 eV associated with the increase in the N/C ratio. Raman spectroscopy measurements showed a dominant D band. ID/IG ratio reaches a maximum value for N/C ≈ 3.03 when the optical band gap is 2.12 eV. Features observed by the photoluminescence and Raman studies have been associated with the increase in the carbon sp2/sp3 ratio due to presence of high nitrogen content.

  16. Influence of oxygen background pressure on crystalline quality of SrTiO3 films grown on MgO by pulsed laser deposition

    International Nuclear Information System (INIS)

    We have systematically investigated the effect of oxygen partial pressure (PO2) on the crystalline quality of SrTiO3 films grown on MgO (001) substrates using pulsed laser deposition and established optimized conditions for the growth of high-quality epitaxial films. The crystalline quality is found to improve significantly in the O2 pressure range of 0.5 endash 1 mTorr, compared to the films deposited at higher pressures of 10 endash 100 mTorr. The x-ray diffraction rocking curves for the films grown at PO2 of 1 mTorr and 100 mTorr yielded full width at half-maximum (FWHM) of 0.7 degree and 1.4 degree, respectively. The in-plane x-ray φ scans showed epitaxial cube-on-cube alignment of the films. Channeling yields χmin were found to be 3 films in oxygen further improves the quality, and the 1 mTorr films give FWHM of 0.13 degree and χmin of 1.7%. In-plane misorientations of the annealed SrTiO3 films calculated using results of transmission electron microscopy are ±0.7 degree for 1 mTorr and ±1.7 degree for the 10 mTorr film. The high temperature superconducting (high-Tc) Y1Ba2Cu3O7-δ films grown on these SrTiO3/MgO substrates showed a χmin of 2.0% and transition temperature of ∼92K, indicating that SrTiO3 buffer layers on MgO can be used for growth of high-quality Y1Ba2Cu3O7-δ thin film heterostructures for use in high-Tc devices and next generation microelectronics devices requiring films with high dielectric constants. copyright 1997 American Institute of Physics

  17. Dislocation Reduction Mechanisms in Gallium Nitride Films Grown by Canti-Bridge Epitaxy Method

    Institute of Scientific and Technical Information of China (English)

    XING Zhi-Gang; WANG Jing; PEI Xiao-Jiang; WAN Wei; CHEN Hong; ZHOU Jun-Ming

    2007-01-01

    @@ By using the special maskless V-grooved c-plane sapphire as the substrate, we previously developed a novel GaN LEO method, or the so-called canti-bridge epitaxy (CBE), and consequently wing-tilt-free GaN films were obtained with low dislocation densities, with which all the conventional difficulties can be overcome [J. Vacuum Sci.Technol. B 23 (2005) 2476]. Here the evolution manner of dislocations in the CBE GaN films is investigated using transmission electron microscopy. The mechanisms of dislocation reduction are discussed. Dislocation behaviour is found to be similar to that in the conventional LEO GaN films except the enhanced dislocation-combination at the coalescence boundary that is a major dislocation-reduction mechanism for the bent horizontal-propagating dislocations in the CBE GaN films. The enhancement of this dislocation-combination probability is believed to result from the inclined shape and the undulate morphology of the sidewalls, which can be readily obtained in a wide range of applicable film-growth conditions during the GaN CBE process. Further development of the GaN CBE method and better crystal-quality of the GaN film both are expected.

  18. Atomically-Smooth MgO films grown on Epitaxial Graphene by Pulsed Laser Deposition

    Science.gov (United States)

    Stuart, Sean; Sandin, Andreas; Rowe, Jack; Dougherty, Dan; Ulrich, Marc

    2013-03-01

    The growth of high quality insulating films on graphene is a crucial materials science task for graphene electronic and spintronic applications. It has been demonstrated that direct spin injection from a magnetic electrode to graphene is possible using MgO tunnel barriers of sufficient quality. We have used pulsed laser deposition (PLD) to grow thin magnesium oxide films directly on epitaxial graphene on SiC(0001). We observe very smooth film morphologies (typical rms roughness of ~ 0.4 nm) that are nearly independent of film thickness and conform to the substrate surface which had ~ 0.2 nm rms roughness. Surface roughness of 0.04 nm have been recorded for ~ 1nm films with no pinholes seen by AFM. XPS and XRD data show non crystalline, hydroxylated MgO films with uniform coverage. This work shows that PLD is a good technique to produce graphene-oxide interfaces without pre-deposition of an adhesion layer or graphene functionalization. The details and kinetics of the deposition process will be described with comparisons being made to other dielectric-on-graphene deposition approaches. Funded by ARO Staff Research Contract # W911NF.

  19. Layered double hydroxides/polymer thin films grown by matrix assisted pulsed laser evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Birjega, R.; Matei, A.; Mitu, B.; Ionita, M.D.; Filipescu, M.; Stokker-Cheregi, F.; Luculescu, C.; Dinescu, M. [National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Str., 77125 Bucharest–Magurele (Romania); Zavoianu, R.; Pavel, O.D. [University of Bucharest, Faculty of Chemistry, Department of Chemical Technology and Catalysis, 4-12 Regina Elisabeta Bd., Bucharest (Romania); Corobea, M.C. [National R. and S. Institute for Chemistry and Petrochemistry, ICECHIM, 202 Splaiul Independentei Str., CP-35-274, 060021, Bucharest (Romania)

    2013-09-30

    Due to their highly tunable properties, layered double hydroxides (LDHs) are an emerging class of the favorably layered crystals used for the preparation of multifunctional polymer/layered crystal nanocomposites. In contrast to cationic clay materials with negatively charge layers, LDHs are the only host lattices with positively charged layers (brucite-like), with interlayer exchangeable anions and intercalated water. In this work, the deposition of thin films of Mg and Al based LDH/polymers nanocomposites by laser techniques is reported. Matrix assisted pulsed laser evaporation was the method used for thin films deposition. The Mg–Al LDHs capability to act as a host for polymers and to produce hybrid LDH/polymer films has been investigated. Polyethylene glycol with different molecular mass compositions and ethylene glycol were used as polymers. The structure and surface morphology of the deposited LDH/polymers films were examined by X-ray diffraction, Fourier transform infra-red spectroscopy, atomic force microscopy and scanning electron microscopy. - Highlights: • Hybrid composites deposited by matrix assisted pulsed laser evaporation (MAPLE). • Mg–Al layered double hydroxides (LDH) and polyethylene glycol (PEG) are used. • Mixtures of PEG1450 and LDH were deposited by MAPLE. • Deposited thin films preserve the properties of the starting material. • The film wettability can be controlled by the amount of PEG.

  20. Surface reactions of molecular and atomic oxygen with carbon phosphide films.

    Science.gov (United States)

    Gorham, Justin; Torres, Jessica; Wolfe, Glenn; d'Agostino, Alfred; Fairbrother, D Howard

    2005-11-01

    The surface reactions of atomic and molecular oxygen with carbon phosphide films have been studied using X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). Carbon phosphide films were produced by ion implantation of trimethylphosphine into polyethylene. Atmospheric oxidation of carbon phosphide films was dominated by phosphorus oxidation and generated a carbon-containing phosphate surface film. This oxidized surface layer acted as an effective diffusion barrier, limiting the depth of phosphorus oxidation within the carbon phosphide film to phosphorus atoms as well as the degree of phosphorus oxidation. For more prolonged AO exposures, a highly oxidized phosphate surface layer formed that appeared to be inert toward further AO-mediated erosion. By utilizing phosphorus-containing hydrocarbon thin films, the phosphorus oxides produced during exposure to AO were found to desorb at temperatures >500 K under vacuum conditions. Results from this study suggest that carbon phosphide films can be used as AO-resistant surface coatings on polymers.

  1. The effect of deposition parameters on the phase of TiO{sub 2} films grown by RF magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Lim, Ji Chon; Song, Kyu Jeong [Chonbuk National University, Jeonju (Korea, Republic of); Park, Chan [Seoul National University, Seoul (Korea, Republic of)

    2014-12-15

    TiO{sub 2} thin films were deposited on Si substrates by using conventional radio-frequency (RF) magnetron sputtering with either metallic Ti or TiO{sub 2} targets, and the effect of the deposition parameters (substrate temperature (T{sub s}), RF sputtering power, gas flow ratio of O{sub 2}/(Ar+O{sub 2}) and deposition time) on the phase of the film was investigated. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to obtain information on the phase of the films and on the surface image/thickness of films, respectively. TiO{sub 2} films deposited at a T{sub s} higher than 300 .deg. C by using a metallic Ti target showed the dominant presence of the rutile phase. For films grown at a constant T{sub s} of 300 .deg. C with different gas flow ratios of O{sub 2}/(Ar+O{sub 2}), the amount of the rutile phase gradually decreased as the oxygen gas flow was decreased. The anatase phase, however, was formed when the O{sub 2}/(Ar+O{sub 2}) was 0.2. On the other hand, for TiO{sub 2} films deposited at T{sub s}'s between 50 .deg. C and 200 .deg. C with an O{sub 2}/(Ar+O{sub 2}) of 0.1 by using a TiO{sub 2} target, both the anatase and the rutile phases gradually decreased as the T{sub s} was increased. For TiO{sub 2} films deposited with various gas flow ratios of O{sub 2}/(Ar+O{sub 2}) between 0 and 0.4 at a constant T{sub s} of 200 .deg. C by using a TiO{sub 2} target, the anatase phase gradually decreased, but the rutile phase gradually increased, as the gas flow ratio was increased.

  2. MBE Grown In x Ga1- x N Thin Films with Bright Visible Emission Centered at 550 nm

    Science.gov (United States)

    Dasari, K.; Thapa, B.; Wang, J.; Wright, J.; Kaya, S.; Jadwisienczak, W. M.; Palai, R.

    2016-04-01

    The In x Ga1- x N thin films with indium content of x = 14-18 at.% were successfully grown by using molecular beam epitaxy (MBE) at high growth temperatures from 650°C to 800°C. In situ reflection high-energy electron diffraction (RHEED) of the In x Ga1- x N films confirmed the Stranski-Krastanov growth mode. X-ray diffraction (XRD) of the films confirmed their highly crystalline nature having c-axis orientation with a small fraction of secondary InN phase admixture. High-resolution cross-sectional scanning electron microscopy images showed two-dimensional epilayers growth with thickness of about ˜260 nm. The high growth temperature of In x Ga1- x N epilayers is found to be favorable to facilitate more GaN phase than InN phase. All the fundamental electronic states of In, Ga, and N were identified by x-ray photoelectron spectroscopy (XPS) and the indium composition has been calculated from the obtained XPS spectra with CASAXPS software. The composition calculations from XRD, XPS and photoluminescence closely match each other. The biaxial strain has been calculated and found to be increasing with the In content. Growing In x Ga1- x N at high temperatures resulted in the reduction in stress/strain which affects the radiative electron-hole pair recombination. The In x Ga1- x N film with lesser strain showed a brighter and stronger green emission than films with the larger built-in strain. A weak S-shaped near band edge emission profile confirms the relatively homogeneous distribution of indium.

  3. Wall-like hierarchical metal oxide nanosheet arrays grown on carbon cloth for excellent supercapacitor electrodes

    Science.gov (United States)

    Huang, Zongyu; Zhang, Zhen; Qi, Xiang; Ren, Xiaohui; Xu, Guanghua; Wan, Pengbo; Sun, Xiaoming; Zhang, Han

    2016-07-01

    Recently, considerable efforts have been made to satisfy the future requirements of electrochemical energy storage using novel functional electrode materials. Binary transition metal oxides (BTMOs) possess multiple oxidation states that enable multiple redox reactions, showing higher supercapacitive properties than single component metal oxides. In this work, a facile hydrothermal method is provided for the synthesis of wall-like hierarchical metal oxide MMoO4 (M = Ni, Co) nanosheet arrays, which are directly grown on flexible carbon cloth for use as advanced binder-free electrodes for supercapacitors. By virtue of their intriguing structure, the resulted active material nanosheets with a high specific surface area can provide a large electroactive region, which could facilitate easy accession of electrolyte ions and fast charge transport, resulting in an enhanced electrochemical performance. Separately, the as-synthesized MMoO4 (M = Ni, Co) samples have exhibited superior specific capacitances (1483 F g-1 of NiMoO4 and 452 F g-1 of CoMoO4 at a current density of 2 A g-1), as well as excellent cycling stability (93.1% capacitance retention of NiMoO4 and 95.9% capacitance retention of CoMoO4 after 2000 cycles). The results show that the binder-free electrodes constructed by deposition of MMoO4 (M = Ni, Co) nanosheets on carbon cloth are promising candidates for the application of supercapacitors.Recently, considerable efforts have been made to satisfy the future requirements of electrochemical energy storage using novel functional electrode materials. Binary transition metal oxides (BTMOs) possess multiple oxidation states that enable multiple redox reactions, showing higher supercapacitive properties than single component metal oxides. In this work, a facile hydrothermal method is provided for the synthesis of wall-like hierarchical metal oxide MMoO4 (M = Ni, Co) nanosheet arrays, which are directly grown on flexible carbon cloth for use as advanced binder

  4. Highly textured Gd2Zr2O7 films grown on textured Ni-5 at.%W substrates by solution deposition route: Growth, texture evolution, and microstructure dependency

    DEFF Research Database (Denmark)

    Yue, Zhao; Grivel, Jean-Claude; Napari, M.;

    2012-01-01

    or crystallization in the thicker films. This work not only demonstrates a route for producing textured Gd2Zr2O7 buffer layers with dense structure directly on technical substrates, but also provides some fundamental understandings related to chemical solution derived films grown on metallic substrates.......Growth, texture evolution and microstructure dependency of solution derived Gd2Zr2O7 films deposited on textured Ni-5 at.%W substrates have been extensively studied. Influence of processing parameters, in particular annealing temperature and dwell time, as well as thickness effect on film texture...

  5. Strain-induced photoconductivity in thin films of Co doped amorphous carbon.

    Science.gov (United States)

    Jiang, Y C; Gao, J

    2014-01-01

    Traditionally, strain effect was mainly considered in the materials with periodic lattice structure, and was thought to be very weak in amorphous semiconductors. Here, we investigate the effects of strain in films of cobalt-doped amorphous carbon (Co-C) grown on 0.7PbMg(1/3)Nb(2/3)O3-0.3PbTiO3 (PMN-PT) substrates. The electric transport properties of the Co-C films were effectively modulated by the piezoelectric substrates. Moreover, we observed, for the first time, strain-induced photoconductivity in such an amorphous semiconductor. Without strain, no photoconductivity was observed. When subjected to strain, the Co-C films exhibited significant photoconductivity under illumination by a 532-nm monochromatic light. A strain-modified photoconductivity theory was developed to elucidate the possible mechanism of this remarkable phenomenon. The good agreement between the theoretical and experimental results indicates that strain-induced photoconductivity may derive from modulation of the band structure via the strain effect. PMID:25338641

  6. The performance of in situ grown Schottky-barrier single wall carbon nanotube field-effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Zhixian [ORNL; Eres, Gyula [ORNL; Jin, Rongying [ORNL; Subedi, Alaska P [ORNL; Mandrus, David [ORNL; Kim, Eugene [ORNL

    2009-01-01

    Electrical transport measurements were used to study device behavior that results from the interplay of defects and inadvertent contact variance that develops in as-grown semiconducting single wall carbon nanotube devices with nominally identical Au contacts. The transport measurements reveal that as-grown nanotubes contain defects that limit the performance of field-effect transistors with ohmic contacts. In Schottky-barrier field-effect transistors the device performance is dominated by the Schottky barrier and the nanotube defects have little effect. We also observed strong rectifying behavior attributed to extreme contact asymmetry due to the different nanoscale roughness of the gold contacts formed during nanotube growth.

  7. The performance of in situ grown Schottky-barrier single wall carbon nanotube field-effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Zhou Zhixian [Department of Physics and Astronomy, Wayne State University, Detroit, MI 48201 (United States); Eres, Gyula; Jin Rongying; Subedi, Alaska; Mandrus, David [Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States); Kim, Eugene H [Department of Physics, University of Windsor, Windsor, ON, N9B 3P4 (Canada)], E-mail: zxzhou@wayne.edu

    2009-02-25

    Electrical transport measurements were used to study device behavior that results from the interplay of defects and inadvertent contact variance that develops in as-grown semiconducting single wall carbon nanotube devices with nominally identical Au contacts. The transport measurements reveal that as-grown nanotubes contain defects that limit the performance of field-effect transistors with ohmic contacts. In Schottky-barrier field-effect transistors the device performance is dominated by the Schottky barrier and the nanotube defects have little effect. We also observed strong rectifying behavior attributed to extreme contact asymmetry due to the different nanoscale roughness of the gold contacts formed during nanotube growth.

  8. The performance of in situ grown Schottky-barrier single wall carbon nanotube field-effect transistors

    International Nuclear Information System (INIS)

    Electrical transport measurements were used to study device behavior that results from the interplay of defects and inadvertent contact variance that develops in as-grown semiconducting single wall carbon nanotube devices with nominally identical Au contacts. The transport measurements reveal that as-grown nanotubes contain defects that limit the performance of field-effect transistors with ohmic contacts. In Schottky-barrier field-effect transistors the device performance is dominated by the Schottky barrier and the nanotube defects have little effect. We also observed strong rectifying behavior attributed to extreme contact asymmetry due to the different nanoscale roughness of the gold contacts formed during nanotube growth.

  9. Electrochemical capacitance characteristics of patterned ruthenium dioxide-carbon nanotube nanocomposites grown onto graphene

    Energy Technology Data Exchange (ETDEWEB)

    Shih, Yi-Ting [Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, No. 43, Section 4, Keelung Road, Taipei 10607, Taiwan (China); Lee, Kuei-Yi, E-mail: kylee@mail.ntust.edu.tw [Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, No. 43, Section 4, Keelung Road, Taipei 10607, Taiwan (China); Department of Electronic Engineering, National Taiwan University of Science and Technology, No. 43, Section 4, Keelung Road, Taipei 10607, Taiwan (China); Huang, Ying-Sheng [Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, No. 43, Section 4, Keelung Road, Taipei 10607, Taiwan (China); Department of Electronic Engineering, National Taiwan University of Science and Technology, No. 43, Section 4, Keelung Road, Taipei 10607, Taiwan (China)

    2014-03-01

    Highlights: • Graphene was grown on Cu foil by mobile thermal chemical vapor deposition system. • CNT was synthesized on graphene for RuO{sub 2} nanostructure growth by thermal chemical vapor deposition system. • The CNT growth location was fixed through the use of photolithography technique, thereby increasing the specific area. • RuO{sub 2} nanostructures were coated onto CNT bundle arrays through metal organic chemical vapor deposition, in order to utilize its pseudo capacitive property. - Abstract: In this study, graphene was used as a conductive substrate for vertically aligned carbon nanotube (CNT) bundle arrays growth, to be used as an electrode for electrochemical double layer capacitor (EDLC), as graphene and CNT exhibit good conductivity and excellent chemical stability. Both of them are composed of carbon, therefore making a superior adhesion between them. The configuration of bundle arrays provided a relatively higher specific surface area in contact with electrolyte, thereby resulting in demonstratively higher capacitance. Moreover, as the RuO{sub 2} nanostructures have good pseudocapacitance characteristics, they were coated onto vertically aligned CNT bundle arrays in order to effectively enhance the EDLC performances. The characteristics of CNT/graphene, CNT bundle/graphene, and RuO{sub 2}/CNT bundle/graphene electrodes were examined with the use of scanning electron microscopy (SEM), transmission electron microscopy (TEM), and Raman spectroscopy. Furthermore, their electrochemical properties were investigated by an electrochemical analyzer. The specific capacitances of CNT/graphene, CNT bundle/graphene, and RuO{sub 2}/CNT bundle/graphene were 4.64, 6.65, and 128.40 F/g at the scan rate of 0.01 V/s, respectively.

  10. The Geometry Variation of As-Grown Carbon Coils with Ni Layer Thickness and Hydrogen Plasma Pretreatment

    Directory of Open Access Journals (Sweden)

    Young-Chul Jeon

    2013-01-01

    Full Text Available Carbon coils could be synthesized using C2H2/H2 as source gases and SF6 as an incorporated additive gas under thermal chemical vapor deposition system. Ni layer on SiO2 substrate was used as a catalyst for the formation of carbon coils. Ni powder was evaporated to form Ni layer on the substrate. The characteristics (formation densities, morphologies, and geometries of as-grown carbon coils on the substrate were investigated as a function of the evaporation time for Ni catalyst layer formation. By hydrogen plasma pretreatment prior to carbon coils synthesis reaction, the dominant formation of the nanosized wave-like geometry of carbon coils could be achieved. The characteristics of as-grown carbon coils with or without hydrogen plasma pretreatment process were investigated. The cause for the control of the carbon coils geometries from the microsized type to the nanosized wave-like one by H2 plasma pretreatment was discussed in association with the stress of Ni catalyst layer on the substrate.

  11. CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES: Field Emission Properties of Ball-Like Nano-Carbon Thin Films Deposited on Mo Films with Accidented Topography

    Science.gov (United States)

    Wang, Long-Yang; Wang, Xiao-Ping; Wang, Li-Jun; Zhang, Lei

    2008-11-01

    Ball-like nano-carhon thin films (BNCTs) are grown on Mo layers by microwave plasma chemical vapour deposition (MPCVD) system. The Mo layers are deposited on ceramic substrates by electron beam deposition method and are pretreated by ultrasonically scratching. The optimization effects of ultrasonically scratching pretreat-ment on the surface micro-structures of carbon films are studied. It is found from field-emission scanning electron microscope (FE-SEM) images and Raman spectra that the surface structures of the carbon films deposited on Mo pretreated are improved, which are composed of highly uniform nano-structured carbon balls with considerable disorder structures. Field emission (FE) measurements are carried out using a diode structure. The experimental results indicate that the BNCTs exhibit good FE properties, which have the turn on field of 1.56 V/μm, and the current density of 1.0mA/cm2 at electric field of 4.0 V/μm, the uniformly distributed emission site density from a broad well-proportioned emission area of 4 cm2 are also obtained. Linearity is observed in Fowler-Nordheim (F-N) plots in higher Geld region, and the possible emission mechanism of BNCTs is discussed.

  12. Characterization of Optical and Electrical Properties of Transparent Conductive Boron-Doped Diamond thin Films Grown on Fused Silica

    Directory of Open Access Journals (Sweden)

    Bogdanowicz Robert

    2014-12-01

    Full Text Available Abstract A conductive boron-doped diamond (BDD grown on a fused silica/quartz has been investigated. Diamond thin films were deposited by the microwave plasma enhanced chemical vapor deposition (MW PECVD. The main parameters of the BDD synthesis, i.e. the methane admixture and the substrate temperature were investigated in detail. Preliminary studies of optical properties were performed to qualify an optimal CVD synthesis and film parameters for optical sensing applications. The SEM micro-images showed the homogenous, continuous and polycrystalline surface morphology; the mean grain size was within the range of 100-250 nm. The fabricated conductive boron-doped diamond thin films displayed the resistivity below 500 mOhm cm-1 and the transmittance over 50% in the VIS-NIR wavelength range. The studies of optical constants were performed using the spectroscopic ellipsometry for the wavelength range between 260 and 820 nm. A detailed error analysis of the ellipsometric system and optical modelling estimation has been provided. The refractive index values at the 550 nm wavelength were high and varied between 2.24 and 2.35 depending on the percentage content of methane and the temperature of deposition.

  13. Permeation barrier performance of Hot Wire-CVD grown silicon-nitride films treated by argon plasma

    Energy Technology Data Exchange (ETDEWEB)

    Majee, S., E-mail: subimal.majee@polytechnique.edu [Laboratoire de Physique des Interfaces et des Couches Minces, CNRS UMR 7647, Ecole polytechnique, 91128 Palaiseau (France); Cerqueira, M.F. [Centro de Física, Universidade do Minho, 4710-057 Braga (Portugal); Tondelier, D.; Vanel, J.C. [Laboratoire de Physique des Interfaces et des Couches Minces, CNRS UMR 7647, Ecole polytechnique, 91128 Palaiseau (France); Geffroy, B. [Laboratoire de Physique des Interfaces et des Couches Minces, CNRS UMR 7647, Ecole polytechnique, 91128 Palaiseau (France); Laboratoire de Chimie des Surfaces et Interfaces, IRAMIS/SPCSI CEA Saclay, 91191 Gif-sur-Yvette (France); Bonnassieux, Y. [Laboratoire de Physique des Interfaces et des Couches Minces, CNRS UMR 7647, Ecole polytechnique, 91128 Palaiseau (France); Alpuim, P. [Centro de Física, Universidade do Minho, 4710-057 Braga (Portugal); INL–International Iberian Nanotechnology Laboratory, 4715-330 Braga (Portugal); Bourée, J.E., E-mail: jean-eric.bouree@polytechnique.edu [Laboratoire de Physique des Interfaces et des Couches Minces, CNRS UMR 7647, Ecole polytechnique, 91128 Palaiseau (France)

    2015-01-30

    In this work SiN{sub x} thin films have been deposited by Hot-Wire Chemical Vapor Deposition (HW-CVD) technique to be used as encapsulation barriers for flexible organic electronic devices fabricated on polyethylene terephthalate (PET) substrates. First results of SiN{sub x} multilayers stacked and stacks of SiN{sub x} single-layers (50 nm each) separated by an Ar-plasma surface treatment are reported. The encapsulation barrier properties of these different multilayers are assessed using the electrical calcium degradation test by monitoring changes in the electrical conductance of encapsulated Ca sensors with time. The water vapor transmission rate is found to be slightly minimized (7 × 10{sup −3} g/m{sup 2}day) for stacked SiN{sub x} single-layers exposed to argon plasma treatment during a short time (2 min) as compared to that for stacked SiN{sub x} single-layers without Ar plasma treatment. - Highlights: • SiN{sub x} films are grown using HW-CVD to be used as permeation barrier layer. • Ar plasma treatment is made between two successive SiN{sub x} films. • Electrical calcium degradation test is used to evaluate the WVTR values. • Lowest WVTR value of ~ 7 × 10{sup -3} g/m{sup 2}.day is reported.

  14. Permeation barrier performance of Hot Wire-CVD grown silicon-nitride films treated by argon plasma

    International Nuclear Information System (INIS)

    In this work SiNx thin films have been deposited by Hot-Wire Chemical Vapor Deposition (HW-CVD) technique to be used as encapsulation barriers for flexible organic electronic devices fabricated on polyethylene terephthalate (PET) substrates. First results of SiNx multilayers stacked and stacks of SiNx single-layers (50 nm each) separated by an Ar-plasma surface treatment are reported. The encapsulation barrier properties of these different multilayers are assessed using the electrical calcium degradation test by monitoring changes in the electrical conductance of encapsulated Ca sensors with time. The water vapor transmission rate is found to be slightly minimized (7 × 10−3 g/m2day) for stacked SiNx single-layers exposed to argon plasma treatment during a short time (2 min) as compared to that for stacked SiNx single-layers without Ar plasma treatment. - Highlights: • SiNx films are grown using HW-CVD to be used as permeation barrier layer. • Ar plasma treatment is made between two successive SiNx films. • Electrical calcium degradation test is used to evaluate the WVTR values. • Lowest WVTR value of ~ 7 × 10-3 g/m2.day is reported

  15. Thermal stability of SiGe films on an ultra thin Ge buffer layer on Si grown at low temperature

    International Nuclear Information System (INIS)

    The thermal stability of SiGe films on an ultra thin Ge buffer layer on Si fabricated at low temperature has been studied. The microstructure and morphology of the samples were investigated by high-resolution X-ray diffraction, Raman spectra and atomic force microscopy, and using a diluted Secco etchant to reveal dislocation content. After thermal annealing processing, it is observed that undulated surface, threading dislocations (TDs) and stacking faults (SFs) appeared at the strained SiGe layer, which developed from the propagation of a misfit dislocation (MD) during thermal annealing, and no SFs but only TDs formed in strain-relaxed sample. And it is found that the SiGe films on the Ge layer grown at 300 deg. C has crosshatch-free surface and is more stable than others, with a root mean square surface roughness of less than 2 nm and the threading dislocation densities as low as ∼105 cm-2. The results show that the thermal stability of the SiGe films is associated with the Ge buffer layer, the relaxation extent and morphology of the SiGe layer.

  16. Synthesis and Characterization of Magnetite/Carbon Nanocomposite Thin Films for Electrochemical Applications

    Institute of Scientific and Technical Information of China (English)

    Suh Cem Pang; Wai Hwa Khoh; Suk Fun Chin

    2011-01-01

    Stable colloidal suspension of magnetite/starch nanocomposite was prepared by a facile and aqueous-based chemical precipitation method, Magnetite/carbon nanocomposite thin films were subsequently formed upon carbonization of the starch component by heat treatment under controlled conditions. The initial content of native sago starch as the carbon source was found to affect the microstructure and electrochemical properties of the resulted magnetite/carbon nanocomposite thin films, A specific capacitance of 124 F/g was achieved for the magnetite/carbon nanocomposite thin films as compared to that of 82 F/g for pure magnetite thin films in Na2SO4 aqueous electrolyte.

  17. Controlled synthesis of high quality carbon nanotubes and their applications in transparent conductive films

    Science.gov (United States)

    Dervishi, Enkeleda

    carbon formation, and higher crystallinity compared with the ones grown by the external furnace cCVD method. Lastly, this research presents the development and characterization of carbon nanotube polymer composites and conductive transparent nanotube thin film coatings. Electrostatic charge dissipation presents a major problem for applications ranging from electronics to space exploration. Nanotube polymer composites with new and improved bulk and surface properties were found to have the highest charge dissipation rates with decay times of seconds. Moreover, a comparative study of conductive transparent thin coatings on glass substrates using different types of CNTs is also discussed. The optoelectronic performance of the carbon nanotube films was found to strongly depend on many effects; including the ratio of metallic-to-semiconducting tubes, dispersion, length, diameter, wall number, and defects.

  18. Influence of annealing temperature on ZnO thin films grown by dual ion beam sputtering

    Indian Academy of Sciences (India)

    Sushil Kumar Pandey; Saurabh Kumar Pandey; Vishnu Awasthi; Ashish Kumar; Uday P Deshpande; Mukul Gupta; Shaibal Mukherjee

    2014-08-01

    We have investigated the influence of in situ annealing on the optical, electrical, structural and morphological properties of ZnO thin films prepared on -type Si(100) substrates by dual ion beam sputtering deposition (DIBSD) system. X-ray diffraction (XRD) measurements showed that all ZnO films have (002) preferred orientation. Full-width at half-maximum (FWHM) of XRD from the (002) crystal plane was observed to reach to a minimum value of 0.139° from ZnO film, annealed at 600 °C. Photoluminescence (PL) measurements demonstrated sharp near-band-edge emission (NBE) at ∼ 380 nm along with broad deep level emissions (DLEs) at room temperature. Moreover, when the annealing temperature was increased from 400 to 600 °C, the ratio of NBE peak intensity to DLE peak intensity initially increased, however, it reduced at further increase in annealing temperature. In electrical characterization as well, when annealing temperature was increased from 400 to 600 °C, room temperature electron mobility enhanced from 6.534 to 13.326 cm2/V s, and then reduced with subsequent increase in temperature. Therefore, 600 °C annealing temperature produced good-quality ZnO film, suitable for optoelectronic devices fabrication. X-ray photoelectron spectroscopy (XPS) study revealed the presence of oxygen interstitials and vacancies point defects in ZnO film annealed at 400 °C.

  19. Intermediate phase evolution in YBCO thin films grown by the TFA process

    International Nuclear Information System (INIS)

    The YBCO thin film growth process from TFA precursors involves a complex reaction path which includes several oxide, fluoride and oxyfluoride intermediate phases, and the final microstructure and properties of the films are strongly influenced by the morphological and chemical evolution of these intermediate phases. In this work we present a study of the evolution of the intermediate phases involved in the TFA YBCO growth process under normal pressure conditions and we show that the oxygen partial pressure during pyrolysis of the TFA precursors is an important parameter. The Cu phase after the TFA pyrolysis can be either CuO, Cu2O or a mixture of both as the oxygen partial pressure is modified. The kinetics evolution of the intermediate phases has been determined for films pyrolysed in oxygen and nitrogen atmospheres and it is concluded that non-equilibrium phase transformations influence the reaction path towards epitaxial YBCO films and its microstructure. The intermediate phase evolution in these two series of films is summarized in kinetic phase diagrams.

  20. Deposition and characterization of carbon nanotubes (CNTS) based films for sensing applications

    Science.gov (United States)

    Dissanayake, Amila C.

    The advent of carbon nanotubes (CNTs) has opened up lot of novel applications because of their unique electrical and mechanical properties. CNTs are well known material for its exceptional electrical, mechanical, optical, thermal and chemical properties. A single-wall nanotube (SWNT) can be either semiconducting, metallic or semi-metallic, based on its chirality and diameter. SWNTs can be used in transistor device as active channels due to high electron mobility (~10000 cm2/(V s), electrical interconnects, nano-scale circuits, field-emission displays, light-emitting devices and thermal heat sinks due to low resistivity, high current density (~109A cm-2 ) and high thermal conductivity (~3500 W m-1). Further, their high Young's modulus and fracture stress is suitable for various sensing applications such as strain/pressure and use in chemical/biological sensors. This work mainly involves the deposition of CNT-based films following two different methods via a conventional microwave chemical vapor deposition (MWCVD) and spinning CNT-composites, and explored the possibility of using CNT-based films in strain gauge applications. Deposited films are characterized and analyzed for their structure, microstructure, composition and electrical properties. Rutherford Backscattering Spectrometry (RBS), X-ray Reflectivity (XRR), Scanning Electron Microscopy (SEM), X-ray Diffraction (XRD), X-ray Photoelectron Spectroscopy (XPS), Atomic Force Microscopy (AFM) and electrical impedance measurement techniques are used to characterize the films prepared by both the above mentioned methods. The synthesis/deposition process is improved based on the observed films properties. A carbon nanotube forest grown on the Si (100) substrate with Ni as a catalyst using CVD system shows an amorphous nature due to loss of catalytic activity of Ni nano-islands. XPS and RBS data show Ni nano-particles diffused into the Si substrate and surface layer of Ni particles turns out to nickel silicide. The

  1. Oxygen measurements in thin ribbon silicon. [edge-defined film-fed grown

    Science.gov (United States)

    Hyland, S. L.; Ast, D. G.; Baghdadi, A.

    1987-01-01

    The oxygen content of thin silicon ribbons grown by the dendritic web technique was measured using a modification of the ASTM method based on Fourier transform infrared spectroscopy. Web silicon was found to have a high oxygen content, ranging from 13 to 19 ppma, calculated from the absorption peak associated with interstitial oxygen and using the new ASTM conversion coefficient. The oxygen concentration changed by about 10 percent along the growth direction of the ribbon. In some samples, a shoulder was detected on the absorption peak. A similar shoulder in Czochralski grown material has been variously interpreted in the literature as due to a complex of silicon, oxygen, and vacancies, or to a phase of SiO2 developed along dislocations in the material. In the case of web silicon, it is not clear which is the correct interpretation.

  2. Investigation on the structural properties of GaN films grown on La0.3Sr1.7AlTaO6 substrates

    Science.gov (United States)

    Wang, Wenliang; Zhou, Shizhong; Liu, Zuolian; Yang, Weijia; Lin, Yunhao; Qian, Huirong; Gao, Fangliang; Li, Guoqiang

    2014-04-01

    Gallium nitride (GaN) films with excellent structural, electrical and optical properties have been epitaxially grown on La0.3Sr1.7AlTaO6 (LSAT) (111) substrates by radio-frequency molecular beam epitaxy at low temperature. The GaN films grown at 500 °C exhibits high crystalline quality with the (0002) and (10-12) full width at half maximum of 0.056° and 0.071°. There is a maximum of 1.1-nm-thick interfacial layer existing between the as-grown GaN and LSAT (111) substrate, and the as-grown about 300-nm-thick GaN films are almost fully relaxed only with a 0.0094% in-plane tensile strain. Hall and photoluminescence (PL) measurements also reveal outstanding electrical and optical properties of the as-grown GaN films on LSAT. This achievement brings the prospect for achieving highly-efficient GaN-based optoelectronic devices on LSAT (111) substrates.

  3. Surface morphology and composition studies in InGaN/GaN film grown by MOCVD

    Institute of Scientific and Technical Information of China (English)

    Tao Tao; Han Ping; Shi Yi; Zheng Youdou; Zhang Zhao; Liu Lian; Su Hui; Xie Zili; Zhang Rong; Liu Bin; Xiu Xiangqian; Li Yi

    2011-01-01

    InGaN filmsweredepositedon(0001)sapphiresubstrates with GaN buffer layers under different growth temperatures by metalorganic chemical vapor deposition.The In-composition of InGaN film was approximately controlled by changing the growth temperature.The connection between the growth temperature,In content,surface morphology and defect formation was obtained by X-ray diffraction,scanning electron microscopy (SEM) and atomic force microscopy (AFM).Meanwhile,by comparing the SEM and AFM surface morphology images,we proposed several models of three different defects and discussed the mechanism of formation.The prominent effect of higher growth temperature on the quality of the InGaN films and defect control were found by studying InGaN films at various growth temperatures.

  4. Preparation and characterization of LaNiO3 films grown by metal–organic deposition

    Indian Academy of Sciences (India)

    Yao Wang; Guofang Zhang; Chengshan Li; Guo Yan; Yafeng Lu

    2011-12-01

    We have investigated the synthesis and characterization of LaNiO3 (LNO) layers deposited on YSZ (100) substrate by metal–organic deposition (MOD). Texture, morphology and electrical properties of the LaNiO3 films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM) and electrical resistivity measurement. It has been found that the formation of (ℎ00) orientation depends on pyrolysis temperature, annealing temperature and thickness of LaNiO3 layers. The LaNiO3 films prepared under optimal condition indicate highly (ℎ00) orientation and a rather smooth surface. The LaNiO3 films show a metallic behaviour in the measured temperature range.

  5. Ferroelectric properties of barium strontium titanate thin films grown by RF co-sputtering

    International Nuclear Information System (INIS)

    In this work, we present the variation of the ferroelectric properties of Ba1-xSrxTiO3 films deposited on Pt/TiO2/SiO2/Si substrates by RF co-sputtering with 0≤x≤1. The co-sputtering was done using a single magnetron with BaTiO3/SrTiO3 targets in a pie mosaics configuration. Smooth and uniform films were obtained using the same conditions of growth and annealing temperature. The X-ray diffraction and EDS results show that the processes were managed to obtain crystalline materials with x from 0 to 1. The behaviour of P-E loops suggests that the ferroelectric properties of the films were tuned by changing the concentration of the cation. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  6. Photonic bandgap amorphous chalcogenide thin films with multilayered structure grown by pulsed laser deposition method

    Science.gov (United States)

    Zhang, Shao-qian; Němec, Petre; Nazabal, Virginie; Jin, Yu-qi

    2016-05-01

    Amorphous chalcogenide thin films were fabricated by the pulsed laser deposition technique. Thereafter, the stacks of multilayered thin films for reflectors and microcavity were designed for telecommunication wavelength. The prepared multilayered thin films for reflectors show good compatibility. The microcavity structure consists of Ge25Ga5Sb10S65 (doped with Er3+) spacer layer surrounded by two 5-layer As40Se60/Ge25Sb5S70 reflectors. Scanning/transmission electron microscopy results show good periodicity, great adherence and smooth interfaces between the alternating dielectric layers, which confirms a suitable compatibility between different materials. The results demonstrate that the chalcogenides can be used for preparing vertical Bragg reflectors and microcavity with high quality.

  7. Modeling the transport properties of epitaxially grown thermoelectric oxide thin films using spectroscopic ellipsometry

    KAUST Repository

    Sarath Kumar, S. R.

    2012-02-01

    The influence of oxygen vacancies on the transport properties of epitaxial thermoelectric (Sr,La)TiO3 thin films is determined using electrical and spectroscopic ellipsometry (SE) measurements. Oxygen vacancy concentration was varied by ex-situ annealing in Ar and Ar/H2. All films exhibited degenerate semiconducting behavior, and electrical conductivity decreased (258–133 S cm−1) with increasing oxygen content. Similar decrease in the Seebeck coefficient is observed and attributed to a decrease in effective mass (7.8–3.2 me ), as determined by SE. Excellent agreement between transport properties deduced from SE and direct electrical measurements suggests that SE is an effective tool for studying oxide thin film thermoelectrics.

  8. Thickness dependent transport and magnetotransport in CSD grown La0.7Pb0.3MnO3 manganite films

    International Nuclear Information System (INIS)

    Highlights: → Thickness dependent transport and MR of CSD grown La0.7Pb0.3MnO3 manganite films. → Chemical Solution Deposition (CSD) is the low cost, simple and easy to handle. → Prominent strain effect in lower thickness films. → 3D lattice strain and microstructure govern the transport and MR in the films. → Low temperature resistivity minima is also affected by 3D lattice strain. -- Abstract: We report the effect of film thickness on transport and magnetotransport in La0.7Pb0.3MnO3 (LPMO) manganite films grown on single crystalline LaAlO3 substrate using chemical solution deposition (CSD) technique. AFM measurements show the island type grain growth responsible for the strain at the film-substrate interface, while structural studies using XRD shows the presence of thickness dependent compressive strain in the films which modifies the transport and magnetotransport in LPMO/LAO films. The observation of low temperature resistivity minima behavior in all the LPMO films has been explained in the context of electron-electron scattering mechanism. The ZFC-FC magnetization measurements show the glassy state behavior below Tmin.

  9. Enhancement in the photocatalytic nature of nitrogen-doped PVD-grown titanium dioxide thin films

    International Nuclear Information System (INIS)

    Nitrogen-doped titanium dioxide semiconductor photocatalytic thin films have been deposited by unbalanced reactive magnetron physical vapor deposition on glass substrates for self-cleaning applications. In order to increase the photocatalytic efficiency of the titania coatings, it is important to enhance the catalysts absorption of light from the solar spectra. Bearing this fact in mind, a reduction in the titania semiconductor band-gap has been attempted by using nitrogen doping from a coreactive gas mixture of N2:O2 during the titanium sputtering process. Rutherford backscattering spectroscopy was used in order to assess the composition of the titania thin films, whereas heavy-ion elastic recoil detection analysis granted the evaluation of the doping level of nitrogen. X-ray photoelectron spectroscopy provided valuable information about the cation-anion binding within the semiconductor lattice. The as-deposited thin films were mostly amorphous, however, after a thermal annealing in vacuum at 500 deg. C the crystalline polymorph anatase and rutile phases have been developed, yielding an enhancement in the crystallinity. Spectroscopic ellipsometry experiments enabled the determination the refractive index of the thin films as a function of the wavelength, while from the optical transmittance it was possible to estimate the semiconductor indirect band-gap of these coatings, which has been proven to decrease as the N-doping increases. The photocatalytic performance of the titania films has been characterized by the degradation rate of an organic reactive dye under UV/visible irradiation. It has been found that for a certain critical limit of 1.19 at. % of nitrogen doping in the titania anatase crystalline lattice enhances the photocatalytic behavior of the thin films and it is in accordance with the observed semiconductor band-gap narrowing to 3.18 eV. By doping the titania lattice with nitrogen, the photocatalytic activity is enhanced under both UV and visible light.

  10. Metabolomics reveals differences of metal toxicity in cultures of Pseudomonas pseudoalcaligenes KF707 grown on different carbon sources

    Directory of Open Access Journals (Sweden)

    Sean Cameron Booth

    2015-08-01

    Full Text Available Co-contamination of metals and organic pollutants is a global problem as metals interfere with the metabolism of complex organics by bacteria. Based on a prior observation that metal tolerance was altered by the sole carbon source being used for growth, we sought to understand how metal toxicity specifically affects bacteria using an organic pollutant as their sole carbon source. To this end metabolomics was used to compare cultures of Pseudomonas pseudoalcaligenes KF707 grown on either biphenyl or succinate as the sole carbon source in the presence of either aluminum or copper. Using multivariate statistical analysis it was found that the metals caused perturbations to more cellular processes in the cultures grown on biphenyl than those grown on succinate. Aluminum induced many changes that were indicative of increased oxidative stress as metabolites involved in DNA damage and protection, the Krebs cycle and anti-oxidant production were altered. Copper also caused metabolic changes that were indicative of similar stress, as well as appearing to disrupt other key enzymes such as fumarase. Additionally, both metals caused the accumulation of biphenyl degradation intermediates indicating that they interfered with biphenyl metabolism. Together these results provide a basic understanding of how metal toxicity specifically affects bacteria at a biochemical level during the degradation of an organic pollutant and implicate the catabolism of this carbon source as a major factor that exacerbates metal toxicity.

  11. Metabolomics reveals differences of metal toxicity in cultures of Pseudomonas pseudoalcaligenes KF707 grown on different carbon sources.

    Science.gov (United States)

    Booth, Sean C; Weljie, Aalim M; Turner, Raymond J

    2015-01-01

    Co-contamination of metals and organic pollutants is a global problem as metals interfere with the metabolism of complex organics by bacteria. Based on a prior observation that metal tolerance was altered by the sole carbon source being used for growth, we sought to understand how metal toxicity specifically affects bacteria using an organic pollutant as their sole carbon source. To this end metabolomics was used to compare cultures of Pseudomonas pseudoalcaligenes KF707 grown on either biphenyl (Bp) or succinate (Sc) as the sole carbon source in the presence of either aluminum (Al) or copper (Cu). Using multivariate statistical analysis it was found that the metals caused perturbations to more cellular processes in the cultures grown on Bp than those grown on Sc. Al induced many changes that were indicative of increased oxidative stress as metabolites involved in DNA damage and protection, the Krebs cycle and anti-oxidant production were altered. Cu also caused metabolic changes that were indicative of similar stress, as well as appearing to disrupt other key enzymes such as fumarase. Additionally, both metals caused the accumulation of Bp degradation intermediates indicating that they interfered with Bp metabolism. Together these results provide a basic understanding of how metal toxicity specifically affects bacteria at a biochemical level during the degradation of an organic pollutant and implicate the catabolism of this carbon source as a major factor that exacerbates metal toxicity. PMID:26347721

  12. Carbon on Quartz Grain Boundaries: Continuous Films versus Isolated Plates

    Science.gov (United States)

    Price, J. D.; Watson, E. B.; Wark, D. A.

    2003-12-01

    Piston-cylinder experiments on quartzites containing a small amount of carbon were conducted at 1.0-1.4 GPa and 850-1500° C in order to assess the microstructure of graphite along grain boundaries in deep crustal materials. In one series of experiments, polished 3mm diameter single-crystal quartz discs were coated with ˜50 to 150 nm of evaporated carbon or 500 to 1000 nm of alcohol-based carbon paint. Stacks of these were subjected to high P-T conditions for durations ranging from 5 minutes to 10 days. Observations from our earlier experiments suggested that the coatings become discontinuous with time at high temperature. However, more recent observations show that coated disc boundaries contain a dark, interconnected material: those subjected to lower temperatures and shorter durations exhibited continuous films; those run at higher temperatures for longer durations contained thicker, yet still interconnected dendrite and plate structures. In contrast, relatively fine-grained synthetic quartzites produced at similar conditions typically do not contain continuous films. Quartz powder with an initial grain size between 75-150 μ m, coated with 30-50 nm of evaporated carbon, was subjected to 850-1300° C for durations ranging from 1 hour to 6 days. Only very short runs at low temperatures contained irregular boundaries still darkened by a connected film; longer duration and higher temperature quartzites exhibited texturally-equilibrated quartz grains accompanied by isolated small opaque carbon plates located along grain corners, edges, and grain boundaries. Identical features are seen in additional quartzite materials constructed in graphite cylinders using uncoated powdered silica glass or smaller quartz crystals (<22 μ m) taken to 1000° C and 1.4 GPa for 14 days. The results suggest that carbon may remain as a connected surface, at least metastably, on silicate mineral boundaries in the absence of grain boundary movement. With grain growth, carbon diffuses

  13. Multiferroic YCrO3 thin films grown on glass substrate: Resistive switching characteristics

    Science.gov (United States)

    Seo, Jeongdae; Ahn, Yoonho; Son, Jong Yeog

    2016-01-01

    Polycrystalline YCrO3 thin films were deposited on (111) Pt/Ta/glass substrates by pulsed laser deposition. The YCrO3 thin films exhibited good ferroelectric properties with remnant polarization of about 5 µC/cm2. Large leakage current was observed by I- V curve and ferroelectric hysteresis loop. The YCrO3 resistive random access memory (RRAM) capacitor showed unipolar switching behaviors with SET and RESET voltages higher than those of general NiO RRAM capacitors. [Figure not available: see fulltext.

  14. CZTS(e) thin films grown by chemical methods for photovoltaic application

    OpenAIRE

    Tombolato,

    2015-01-01

    Le kesteriti sono una classe di semiconduttori con un band gap diretto compresa tra 1,0 e 1,5 eV e un coefficiente di assorbimento dell'ordine di 10^4 cm^ -1 nello spettro visibile e durante gli ultimi vent’anni hanno ricevuto parecchia attenzione a causa della loro potenziale applicabilità come materiali a film sottile nel fotovoltaico. Un altro calcogenuro a film sottile, il CIGS, di composizione Cu2InxGa (1-x)Se2 è già prodotto a livello industriale, ma il costante aumento del prezzo dell...

  15. Nickel Thin Films Grown by MOCVD Using Ni(dmg)2 as Precursor

    OpenAIRE

    Becht, M.; Gallus, J.; Hunziker, M.; Atamny, F.; Dahmen, K.-H.

    1995-01-01

    The aim of this study was (i) to investigate alternatives to the very toxic Ni(CO)4, (ii) optimization of the parameters for Ni film growth, and (iii) characterization of the film morphology. The thermal behaviour of the precursors bis(dimethylglyoximato)Ni(II), [Ni(dmg)2], bis(2,2,6,6-tetramethyl-3,5-heptandionato)Ni(II), [Ni(thd)2], N,N'-ethylenebis(2,4-pentandioniminoato)Ni(II), [Ni(enacac)], and bis(2-amino-pent-2-en-4-onato)Ni(II), [Ni(apo)2] were investigated in a model reactor. Further...

  16. Thermal oxidation-grown vanadium dioxide thin films on FTO (Fluorine-doped tin oxide) substrates

    Science.gov (United States)

    Tong, Guoxiang; Li, Yi; Wang, Feng; Huang, Yize; Fang, Baoying; Wang, Xiaohua; Zhu, Huiqun; Li, Liu; Shen, Yujian; Zheng, Qiuxin; Liang, Qian; Yan, Meng; Qin, Yuan; Ding, Jie

    2013-11-01

    By deposition of metallic vanadium on FTO substrate in Argon atmosphere at room temperature, the sample was then annealed in furnace for 2 h at the temperature of 410 °C in air ambient. (1 1 0) -orientated vanadium dioxide films were prepared on the FTO surface. A maximum transmittance of ˜40% happened at 900-1250 nm region at room temperature. The change of optical transmittance at this region was ˜25% between semiconducting and metallic states. In particular, vanadium dioxide thin films on FTO exhibit semiconductor-metal phase transition at ˜51 °C, the width of the hysteresis loop is ˜8 °C.

  17. Preparation of self-supporting carbon thin films

    CERN Document Server

    Lommel, B; Kindler, B; Klemm, J; Steiner, J

    2002-01-01

    For heavy-ion beam experiments, self-supporting carbon thin films are needed as targets, stripper foils and as backings (Nucl. Instr. and Meth. A 334 (1993) 69) for materials which cannot be produced self-supporting. Using resistance evaporation under high vacuum, self-supporting carbon foils with a thickness of 5 mu g/cm sup 2 and a diameter of 10 mm, a thickness of 10 mu g/cm sup 2 and a diameter of 50 mm up to a thickness of 50 mu g/cm sup 2 and a diameter of 300 mm can be obtained. Due to the energy impact of the heavy-ion beam, the amorphous carbon is restructured into textured graphite, as was found already by Dollinger et al. (Nucl. Instr. and Meth. A 303 (1991) 79). The discuss the production process as well as the change of the layer structure caused by the energy deposit.

  18. Nanocomposite fibers and film containing polyolefin and surface-modified carbon nanotubes

    Science.gov (United States)

    Chu,Benjamin; Hsiao, Benjamin S.

    2010-01-26

    Methods for modifying carbon nanotubes with organic compounds are disclosed. The modified carbon nanotubes have enhanced compatibility with polyolefins. Nanocomposites of the organo-modified carbon nanotubes and polyolefins can be used to produce both fibers and films having enhanced mechanical and electrical properties, especially the elongation-to-break ratio and the toughness of the fibers and/or films.

  19. Structural properties of Cu2O epitaxial films grown on c-axis single crystal ZnO by magnetron sputtering

    Science.gov (United States)

    Gan, J.; Gorantla, S.; Riise, H. N.; Fjellvâg, Ø. S.; Diplas, S.; Løvvik, O. M.; Svensson, B. G.; Monakhov, E. V.; Gunnæs, A. E.

    2016-04-01

    Epitaxial Cu2O films grown by reactive and ceramic radio frequency magnetron sputtering on single crystalline ZnO (0001) substrates are investigated. The films are grown on both O- and Zn-polar surface of the ZnO substrates. The Cu2O films exhibit a columnar growth manner apart from a ˜5 nm thick CuO interfacial layer. In comparison to the reactively sputtered Cu2O, the ceramic-sputtered films are less strained and appear to contain nanovoids. Irrespective of polarity, the Cu2O grown by reactive sputtering is observed to have (111)Cu2O||(0001)ZnO epitaxial relationship, but in the case of ceramic sputtering the films are found to show additional (110)Cu2O reflections when grown on O-polar surface. The observed CuO interfacial layer can be detrimental for the performance of Cu2O/ZnO heterojunction solar cells reported in the literature.

  20. Graphene-carbon nanotube hybrid materials and use as electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Tour, James M.; Zhu, Yu; Li, Lei; Yan, Zheng; Lin, Jian

    2016-09-27

    Provided are methods of making graphene-carbon nanotube hybrid materials. Such methods generally include: (1) associating a graphene film with a substrate; (2) applying a catalyst and a carbon source to the graphene film; and (3) growing carbon nanotubes on the graphene film. The grown carbon nanotubes become covalently linked to the graphene film through carbon-carbon bonds that are located at one or more junctions between the carbon nanotubes and the graphene film. In addition, the grown carbon nanotubes are in ohmic contact with the graphene film through the carbon-carbon bonds at the one or more junctions. The one or more junctions may include seven-membered carbon rings. Also provided are the formed graphene-carbon nanotube hybrid materials.