Sample records for carbide single crystals
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Single-Crystal Tungsten Carbide in High-Temperature In-Situ Additive Manufacturing Characterization
Energy Technology Data Exchange (ETDEWEB)
Kolopus, James A. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Boatner, Lynn A. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
2017-05-18
Nanoindenters are commonly used for measuring the mechanical properties of a wide variety of materials with both industrial and scientific applications. Typically, these instruments employ an indenter made of a material of suitable hardness bonded to an appropriate shaft or holder to create an indentation on the material being tested. While a variety of materials may be employed for the indenter, diamond and boron carbide are by far the most common materials used due to their hardness and other desirable properties. However, as the increasing complexity of new materials demands a broader range of testing capabilities, conventional indenter materials exhibit significant performance limitations. Among these are the inability of diamond indenters to perform in-situ measurements at temperatures above 600oC in air due to oxidation of the diamond material and subsequent degradation of the indenters mechanical properties. Similarly, boron carbide also fails at high temperature due to fracture. [1] Transition metal carbides possess a combination of hardness and mechanical properties at high temperatures that offer an attractive alternative to conventional indenter materials. Here we describe the technical aspects for the growth of single-crystal tungsten carbide (WC) for use as a high-temperature indenter material, and we examine a possible approach to brazing these crystals to a suitable mount for grinding and attachment to the indenter instrument. The use of a by-product of the recovery process is also suggested as possibly having commercial value.
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International Nuclear Information System (INIS)
Miyoshi, K.; Buckley, D.H.
1978-04-01
Sliding friction experiments were conducted with single-crystal silicon carbide in contact with transition metals (tungsten, iron, rhodium, nickel, titanium, and cobalt), copper, and aluminum. Results indicate the coefficient of friction for a silicon carbide-metal system is related to the d bond character and relative chemical activity of the metal. The more active the metal, the higher the coefficient of friction. All the metals examined transferred to the surface of silicon carbide in sliding. The chemical activity of metal to silicon and carbon and shear modulus of the metal may play important roles in metal transfer and the form of the wear debris. The less active metal is, and the greater resistance to shear it has, with the exception of rhodium and tungsten, the less transfer to silicon carbide
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Formation of carbides and their effects on stress rupture of a Ni-base single crystal superalloy
International Nuclear Information System (INIS)
Liu, L.R.; Jin, T.; Zhao, N.R.; Sun, X.F.; Guan, H.R.; Hu, Z.Q.
2003-01-01
Creep tests of a nickel-base single crystal superalloy with minor C addition and non-carbon were carried out at different temperatures and stresses. Correlations between microstructural change and testing temperature and stress were enabled through scanning electron microscopy (SEM) and transmission electron microscopy (TEM), detailing the rafting microstucture and carbides precipitation. The results showed that minor carbon addition prolonged the second stage of creep strain curves and improved creep properties. Some carbide was precipitated during creep tests in modified alloy. M 23 C 6 carbide precipitated at lower temperature (871-982 deg. C), while (M 6 C) 2 carbide precipitated at higher temperature (>1000 deg. C), all of which was considered to be beneficial to creep properties. A small amount of MC carbide formed during solidification and its decomposition product (M 6 C) 1 were detrimental to mechanical properties, which together with micropores provided the site of initiation of cracks and led to the final fracture
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Crystallization of nodular cast iron with carbides
Directory of Open Access Journals (Sweden)
S. Pietrowski
2008-12-01
Full Text Available In this paper a crystallization process of nodular cast iron with carbides having a different chemical composition have been presented. It have been found, that an increase of molybdenum above 0,30% causes the ledeburutic carbides crystallization after (γ+ graphite eutectic phase crystallization. When Mo content is lower, these carbides crystallize as a pre-eutectic phase. In this article causes of this effect have been given.
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Single-crystal growth of Group IVB and VB carbides by the floating-zone method
International Nuclear Information System (INIS)
Finch, C.B.; Chang, Y.K.; Abraham, M.M.
1989-02-01
The floating-zone method for the growth of Group IVB and VB carbides is described and reviewed. We have systematically investigated the technique and confirmed the growth of large single crystals of TiC/sub 0.95/, ZrC/sub 0.93/, ZrC/sub 0.98/, VC/sub 0.80/, NbC/sub 0.95/, TaC/sub 0.89/. Optimal growth conditions were in the 0.5-2.0 cm/h range under 8-12 atm helium. Good crystal growth results were achieved with hot-pressed starting rods of 90-95% density, using a ''double pancake'' induction coil and a 200-kHz/100- kW rf power supply. 36 refs., 5 figs., 3 tabs
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National Research Council Canada - National Science Library
Miyoshi, Kazuhisa
1978-01-01
An investigation was conducted to examine the removal and plastic deformation of metal as a function of the metal properties when the metal is in sliding contact with a single-crystal abrasive grit of silicon carbide...
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Study of a macrodefect in a silicon carbid single crystal by means of X-ray phase contrast
Energy Technology Data Exchange (ETDEWEB)
Argunova, T. S., E-mail: argunova2002@mail.ru [Russian Academy of Sciences, Ioffe Institute (Russian Federation); Kohn, V. G. [National Research Centre “Kurchatov Institute” (Russian Federation); Lim, J. H. [Pohang Accelerator Laboratory (Korea, Republic of); Je, J. H. [Pohang University of Science and Technology, Department of Materials Science and Engineering (Korea, Republic of)
2016-11-15
The morphology of a macrodefect in a single-crystal silicon carbide wafer has been investigated by the computer simulation of an experimental X-ray phase-contrast image. A micropipe, i.e., a long cavity with a small (elliptical in the general case) cross section, in a single crystal has been considered as a macrodefect. A far-field image of micropipe has been measured with the aid of synchrotron radiation without a monochromator. The parameters of micropipe elliptical cross section are determined based on one projection in two directions: parallel and perpendicular to the X-ray beam propagation direction, when scanning along the pipe axis. The results demonstrate the efficiency of the phase contrast method supplemented with computer simulation for studying such macrodefects when the defect position in the sample volume is unknown beforehand.
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Ultrasonically Assisted Single Point Diamond Turning of Optical Mold of Tungsten Carbide
Directory of Open Access Journals (Sweden)
Zhanjie Li
2018-02-01
Full Text Available To realize high efficiency, low/no damage and high precision machining of tungsten carbide used for lens mold, a high frequency ultrasonic vibration cutting system was developed at first. Then, tungsten carbide was precisely machined with a polycrystalline diamond (PCD tool assisted by the self-developed high frequency ultrasonic vibration cutting system. Tool wear mechanism was investigated in ductile regime machining of tungsten carbide. The cutter back-off phenomenon in the process was analyzed. The subsequent experimental results of ultra-precision machining with a single crystal diamond tool showed that: under the condition of high frequency ultrasonic vibration cutting, nano-scale surface roughness can be obtained by the diamond tool with smaller tip radius and no defects like those of ground surface were found on the machined surface. Tool wear mechanisms of the single crystal diamond tool are mainly abrasive wear and micro-chipping. To solve the problem, a method of inclined ultrasonic vibration cutting with negative rake angle was put forward according to force analysis, which can further reduce tool wear and roughness of the machined surface. The investigation was important to high efficiency and quality ultra-precision machining of tungsten carbide.
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Helium interaction with vacancy-type defects created in silicon carbide single crystal
Linez, F.; Gilabert, E.; Debelle, A.; Desgardin, P.; Barthe, M.-F.
2013-05-01
Generation of He bubbles or cavities in silicon carbide is an important issue for the use of this material in nuclear and electronic applications. To understand the mechanisms prior to the growth of these structures, an atomic-scale study has been conducted. 6H-SiC single crystals have been implanted with 50 keV-He ions at 2 × 1014 and 1015 cm-2 and successively annealed at various temperatures from 150 to 1400 °C. After each annealing, the defect distributions in the samples have been probed by positron annihilation spectroscopy. Four main evolution stages have been evidenced for the two investigated implantation fluences: at (1) 400 °C for both fluences, (2) at 850 °C for the low fluence and 950 °C for the high one, (3) at 950 °C for the low fluence and 1050 °C for the high one and (4) at 1300 °C for both fluences. The perfect correlation between the positron annihilation spectroscopy and the thermodesorption measurements has highlighted the He involvement in the first two stages corresponding respectively to its trapping by irradiation-induced divacancies and the detrapping from various vacancy-type defects generated by agglomeration processes.
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Helium interaction with vacancy-type defects created in silicon carbide single crystal
Energy Technology Data Exchange (ETDEWEB)
Linez, F., E-mail: florence.linez@aalto.fi [CEMHTI CNRS, 3A rue de la Férollerie, 45071 Orléans (France); Gilabert, E. [CENBG, U.R.A. 451 CNRS, Université de Bordeaux I, BP120, Le Haut Vigneau, 33175 Gradignan Cedex (France); Debelle, A. [CSNSM, Univ. Paris-Sud, CNRS-IN2P3, 91405 Orsay Campus (France); Desgardin, P.; Barthe, M.-F. [CEMHTI CNRS, 3A rue de la Férollerie, 45071 Orléans (France)
2013-05-15
Generation of He bubbles or cavities in silicon carbide is an important issue for the use of this material in nuclear and electronic applications. To understand the mechanisms prior to the growth of these structures, an atomic-scale study has been conducted. 6H–SiC single crystals have been implanted with 50 keV-He ions at 2 × 10{sup 14} and 10{sup 15} cm{sup −2} and successively annealed at various temperatures from 150 to 1400 °C. After each annealing, the defect distributions in the samples have been probed by positron annihilation spectroscopy. Four main evolution stages have been evidenced for the two investigated implantation fluences: at (1) 400 °C for both fluences, (2) at 850 °C for the low fluence and 950 °C for the high one, (3) at 950 °C for the low fluence and 1050 °C for the high one and (4) at 1300 °C for both fluences. The perfect correlation between the positron annihilation spectroscopy and the thermodesorption measurements has highlighted the He involvement in the first two stages corresponding respectively to its trapping by irradiation-induced divacancies and the detrapping from various vacancy-type defects generated by agglomeration processes.
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Khramtsov, Igor A.; Vyshnevyy, Andrey A.; Fedyanin, Dmitry Yu.
2018-03-01
Practical applications of quantum information technologies exploiting the quantum nature of light require efficient and bright true single-photon sources which operate under ambient conditions. Currently, point defects in the crystal lattice of diamond known as color centers have taken the lead in the race for the most promising quantum system for practical non-classical light sources. This work is focused on a different quantum optoelectronic material, namely a color center in silicon carbide, and reveals the physics behind the process of single-photon emission from color centers in SiC under electrical pumping. We show that color centers in silicon carbide can be far superior to any other quantum light emitter under electrical control at room temperature. Using a comprehensive theoretical approach and rigorous numerical simulations, we demonstrate that at room temperature, the photon emission rate from a p-i-n silicon carbide single-photon emitting diode can exceed 5 Gcounts/s, which is higher than what can be achieved with electrically driven color centers in diamond or epitaxial quantum dots. These findings lay the foundation for the development of practical photonic quantum devices which can be produced in a well-developed CMOS compatible process flow.
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Sintering of nano crystalline α silicon carbide by doping with boron ...
Indian Academy of Sciences (India)
Unknown
tions, they concluded that either reaction sintering or liquid phase .... α-6H silicon carbide single crystal by three different laboratories ... silicon carbide particles by the overall reaction .... layer displacement is likely to occur in such a manner as.
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Single-Event Effects in Silicon Carbide Power Devices
Lauenstein, Jean-Marie; Casey, Megan C.; LaBel, Kenneth A.; Ikpe, Stanley; Topper, Alyson D.; Wilcox, Edward P.; Kim, Hak; Phan, Anthony M.
2015-01-01
This report summarizes the NASA Electronic Parts and Packaging Program Silicon Carbide Power Device Subtask efforts in FY15. Benefits of SiC are described and example NASA Programs and Projects desiring this technology are given. The current status of the radiation tolerance of silicon carbide power devices is given and paths forward in the effort to develop heavy-ion single-event effect hardened devices indicated.
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Structure and single-phase regime of boron carbides
International Nuclear Information System (INIS)
Emin, D.
1988-01-01
The boron carbides are composed of twelve-atom icosahedral clusters which are linked by direct covalent bonds and through three-atom intericosahedral chains. The boron carbides are known to exist as a single phase with carbon concentrations from about 8 to about 20 at. %. This range of carbon concentrations is made possible by the substitution of boron and carbon atoms for one another within both the icosahedra and intericosahedral chains. The most widely accepted structural model for B 4 C (the boron carbide with nominally 20% carbon) has B/sub 11/C icosahedra with C-B-C intericosahedral chains. Here, the free energy of the boron carbides is studied as a function of carbon concentration by considering the effects of replacing carbon atoms within B 4 C with boron atoms. It is concluded that entropic and energetic considerations both favor the replacement of carbon atoms with boron atoms within the intericosahedral chains, C-B-C→C-B-B. Once the carbon concentration is so low that the vast majority of the chains are C-B-B chains, near B/sub 13/C 2 , subsequent substitutions of carbon atoms with boron atoms occur within the icosahedra, B/sub 11/C→B/sub 12/. Maxima of the free energy occur at the most ordered compositions: B 4 C,B/sub 13/C 2 ,B/sub 14/C. This structural model, determined by studying the free energy, agrees with that previously suggested by analysis of electronic and thermal transport data. These considerations also provide an explanation for the wide single-phase regime found for boron carbides
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Margarone, D.; Krása, J.; Giuffrida, L.; Picciotto, A.; Torrisi, L.; Nowak, T.; Musumeci, P.; Velyhan, A.; Prokůpek, J.; Láska, L.; Mocek, T.; Ullschmied, J.; Rus, B.
2011-05-01
Multi-MeV beams of light ions have been produced using the 300 picosecond, kJ-class iodine laser, operating at the Prague Asterix Laser System facility in Prague. Real-time ion diagnostics have been performed by the use of various time-of-flight (TOF) detectors: ion collectors (ICs) with and without absorber thin films, new prototypes of single-crystal diamond and silicon carbide detectors, and an electrostatic ion mass spectrometer (IEA). In order to suppress the long photopeak induced by soft X-rays and to avoid the overlap with the signal from ultrafast particles, the ICs have been shielded with Al foil filters. The application of large-bandgap semiconductor detectors (>3 eV) ensured cutting of the plasma-emitted visible and soft-UV radiation and enhancing the sensitivity to the very fast proton/ion beams. Employing the IEA spectrometer, various ion species and charge states in the expanding laser-plasma have been determined. Processing of the experimental data based on the TOF technique, including estimation of the plasma fast proton maximum and peak energy, ion beam currents and total charge, total number of fast protons, as well as deconvolution processes, ion stopping power, and ion/photon transmission calculations for the different metallic filters used, are reported.
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Influence of structures on fracture and fracture toughness of cemented tungsten carbides
International Nuclear Information System (INIS)
Zhao, W.; Zhang, X.
1987-01-01
A study was made of the influence of structures on fracture and fracture toughness of cemented tungsten carbides with different compositions and grain sizes. The measurement of the fracture toughness of cemented tungsten carbide was carried out using single edge notched beam. The microstructural parameters and the proportion for each fracture mode on the fracture surface were obtained. The brittle fracture of the alloy is mainly due to the interfacial decohesion fracture following the interface of the carbide crystals. It has been observed that there are localized fractures region ahead of the crack tip. The morphology of the crack propagation path as well as the slip structure in the cobalt phase of the deformed region have been investigated. In addition, a study of the correlation between the plane strain fracture toughness and microstructural parameters, such as mean free path of the cobalt phase, tungsten carbide grain size and the contiguity of tungsten carbide crystals was also made
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Single Photon Sources in Silicon Carbide
International Nuclear Information System (INIS)
Brett Johnson
2014-01-01
Single photon sources in semiconductors are highly sought after as they constitute the building blocks of a diverse range of emerging technologies such as integrated quantum information processing, quantum metrology and quantum photonics. In this presentation, we show the first observation of single photon emission from deep level defects in silicon carbide (SiC). The single photon emission is photo-stable at room temperature and surprisingly bright. This represents an exciting alternative to diamond color centers since SiC possesses well-established growth and device engineering protocols. The defect is assigned to the carbon vacancy-antisite pair which gives rise to the AB photoluminescence lines. We discuss its photo-physical properties and their fabrication via electron irradiation. Preliminary measurements on 3C SiC nano-structures will also be discussed. (author)
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Single-Event Effects in Silicon and Silicon Carbide Power Devices
Lauenstein, Jean-Marie; Casey, Megan C.; LaBel, Kenneth A.; Topper, Alyson D.; Wilcox, Edward P.; Kim, Hak; Phan, Anthony M.
2014-01-01
NASA Electronics Parts and Packaging program-funded activities over the past year on single-event effects in silicon and silicon carbide power devices are presented, with focus on SiC device failure signatures.
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A multistep single-crystal-to-single-crystal bromodiacetylene dimerization
Hoheisel, Tobias N.; Schrettl, Stephen; Marty, Roman; Todorova, Tanya K.; Corminboeuf, Clémence; Sienkiewicz, Andrzej; Scopelliti, Rosario; Schweizer, W. Bernd; Frauenrath, Holger
2013-04-01
Packing constraints and precise placement of functional groups are the reason that organic molecules in the crystalline state often display unusual physical or chemical properties not observed in solution. Here we report a single-crystal-to-single-crystal dimerization of a bromodiacetylene that involves unusually large atom displacements as well as the cleavage and formation of several bonds. Density functional theory computations support a mechanism in which the dimerization is initiated by a [2 + 1] photocycloaddition favoured by the nature of carbon-carbon short contacts in the crystal structure. The reaction proceeded up to the theoretical degree of conversion without loss of crystallinity, and it was also performed on a preparative scale with good yield. Moreover, it represents the first synthetic pathway to (E)-1,2-dibromo-1,2-diethynylethenes, which could serve as synthetic intermediates for the preparation of molecular carbon scaffolds. Our findings both extend the scope of single-crystal-to-single-crystal reactions and highlight their potential as a synthetic tool for complex transformations.
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Structure-Property Relationship in Metal Carbides and Bimetallic Alloys
Energy Technology Data Exchange (ETDEWEB)
Chen, Jingguan [University of Delaware
2014-03-04
The primary objective of our DOE/BES sponsored research is to use carbide and bimetallic catalysts as model systems to demonstrate the feasibility of tuning the catalytic activity, selectivity and stability. Our efforts involve three parallel approaches, with the aim at studying single crystal model surfaces and bridging the “materials gap” and “pressure gap” between fundamental surface science studies and real world catalysis. The utilization of the three parallel approaches has led to the discovery of many intriguing catalytic properties of carbide and bimetallic surfaces and catalysts. During the past funding period we have utilized these combined research approaches to explore the possibility of predicting and verifying bimetallic and carbide combinations with enhanced catalytic activity, selectivity and stability.
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DETERMINATION OF VICKERS MICROHARDNESS IN β-Ga2O3 SINGLE CRYSTALS GROWN FROM THEIR OWN MELT
Directory of Open Access Journals (Sweden)
L. I. Guzilova
2015-05-01
Full Text Available The results of microhardness measurements of β-Ga2O3 single crystals for (001 crystallographic face are reported. The crystals were grown by the free crystallization with the "Garnet-2M" equipment. Microhardness values were determined by the Vickers method at varying loads. A four-sided diamond pyramid was used as an indenter. The average value of gallium oxide microhardness was equal to 8.91 GPa. We have carried out comparison of the values obtained with the microhardness for the other wide bandgap semiconductors - epitaxial GaN layers grown on 6H-SiC and GaP layers grown on GaP:S. The findings are usable for machining process development of β-Ga2O3 single crystal substrates. In particular, silicon carbide and electrocorundum may be recommended for β-Ga2O3 machine processing.
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Energy Technology Data Exchange (ETDEWEB)
Sargent, G A; Freeman, G B; Chao, J L.R.
1980-01-01
A Ni(111) crystal with small angle boundaries was used to examine the adsorption of CO. The adsorption of CO on a perfect Ni(111) single crystal was used for reference. Auger spectra show that the boundary lines on the sample surface provide favorable sites for the adsorbed CO to dissociate at temperatures as low as 25/sup 0/C. The post-dissociation carbon appears mostly in the form of a nickel carbide on the surface. After heating the crystal to 850/sup 0/C, sulfur diffused to the surface and blocked the surface adsorption sites uniformly. The boundary-enhanced dissociation of absorbed CO is no longer observed after the diffusion of sulfur to the crystal surface. AES depth profiling of sulfur concentration at different positions on the crystal with respect to the boundary lines show no evidence that the boundary lines provide an enhanced path for sulfur diffusion. 7 figures.
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International Nuclear Information System (INIS)
Silva, F.T. da; Nunes, M.A.M.; Souza, C.P. de; Gomes, U.U.
2010-01-01
The tungsten carbide (WC) has wide application due to its properties like high melting point, high hardness, wear resistance, oxidation resistance and good electrical conductivity. The microstructural characteristics of the starting powders influences the final properties of the carbide. In this context, the use of nanoparticle powders is an efficient way to improve the final properties of the WC. The high energy milling stands out from other processes to obtain nanometric powders due to constant microstructural changes caused by this process. Therefore, the objective is to undertake an analysis of microstructural characteristics on the crystallite size and microdeformations of the crystal lattice using the technique of X-ray diffraction (XRD) using the Rietveld refinement. The results show an efficiency of the milling process to reduce the crystallite size, leading to a significant deformation in the crystal lattice of WC from 5h milling. (author)
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Growth of Ba-hexaferrite films on single crystal 6-H SiC
International Nuclear Information System (INIS)
Chen Zhoahui; Yang, Aria; Yoon, S.D.; Ziemer, Katherine; Vittoria, Carmine; Harris, V.G.
2006-01-01
Barium hexaferrite films have been processed by pulsed laser deposition on single crystal 6-H silicon carbide substrates. Atomic force microscopy images show hexagonal crystals (∼0.5μm in diameter) oriented with the c-axis perpendicular to the film plane. X-ray θ-2θ diffraction measurements indicate a strong (0,0,2n) alignment of crystallites. The magnetization for low-pressure deposition (20mTorr) is comparable to bulk values (4πM s ∼4320G). The loop squareness, important for self-bias microwave device applications, increases with oxygen pressure reaching a maximum value of 70%. This marks the first growth of a microwave ferrite on SiC substrates and offers a new approach in the design and development of μ-wave and mm-wave monolithic integrated circuits. c integrated circuits
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Indian Academy of Sciences (India)
2018-05-18
May 18, 2018 ... Abstract. 4-Nitrobenzoic acid (4-NBA) single crystals were studied for their linear and nonlinear optical ... studies on the proper growth, linear and nonlinear optical ..... between the optic axes and optic sign of the biaxial crystal.
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International Nuclear Information System (INIS)
Al-Jarba, K.A.; Fuchs, G.E.
2004-01-01
In an effort to reduce grain defects in large single crystal Ni-base superalloy components, carbon is intentionally added. In this study, the effect of carbon additions on the microstructure and solidification defect formation of a model Ni-based superalloy, LMSX-1, was examined. The results show that the tendency of the alloy to form all types of solidification defects decreased as the carbon content increased. The as-cast microstructures also exhibited a decrease in the amount of γ-γ' eutectic structure and an increase in the volume fraction of carbides and porosity, as the carbon content was increased. The carbides formed in these alloys were mostly of script-type MC carbides which formed continuous, dendritic networks in the interdendritic region. Microprobe analysis of the as-cast structures showed that the partitioning coefficients did not change with carbon additions. Therefore, the reduction in defect formation with increasing carbon content could not be attributed to changes in segregation behavior of alloying elements. Instead, the presence of these carbides in the interdendritic regions of the alloy appeared to have prevented the thermosolutal fluid flow
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Neutron irradiation induced amorphization of silicon carbide
International Nuclear Information System (INIS)
Snead, L.L.; Hay, J.C.
1998-01-01
This paper provides the first known observation of silicon carbide fully amorphized under neutron irradiation. Both high purity single crystal hcp and high purity, highly faulted (cubic) chemically vapor deposited (CVD) SiC were irradiated at approximately 60 C to a total fast neutron fluence of 2.6 x 10 25 n/m 2 . Amorphization was seen in both materials, as evidenced by TEM, electron diffraction, and x-ray diffraction techniques. Physical properties for the amorphized single crystal material are reported including large changes in density (-10.8%), elastic modulus as measured using a nanoindentation technique (-45%), hardness as measured by nanoindentation (-45%), and standard Vickers hardness (-24%). Similar property changes are observed for the critical temperature for amorphization at this neutron dose and flux, above which amorphization is not possible, is estimated to be greater than 130 C
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Latest Advances in the Generation of Single Photons in Silicon Carbide
Directory of Open Access Journals (Sweden)
Albert Boretti
2016-06-01
Full Text Available The major barrier for optical quantum information technologies is the absence of reliable single photons sources providing non-classical light states on demand which can be easily and reliably integrated with standard processing protocols for quantum device fabrication. New methods of generation at room temperature of single photons are therefore needed. Heralded single photon sources are presently being sought based on different methods built on different materials. Silicon Carbide (SiC has the potentials to serve as the preferred material for quantum applications. Here, we review the latest advances in single photon generation at room temperatures based on SiC.
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Growth and structure of carbide nanorods
International Nuclear Information System (INIS)
Lieber, C.M.; Wong, E.W.; Dai, H.; Maynor, B.W.; Burns, L.D.
1996-01-01
Recent research on the growth and structure of carbide nanorods is reviewed. Carbide nanorods have been prepared by reacting carbon nanotubes with volatile transition metal and main group oxides and halides. Using this approach it has been possible to obtain solid carbide nanorods of TiC, SiC, NbC, Fe 3 C, and BC x having diameters between 2 and 30 nm and lengths up to 20 microm. Structural studies of single crystal TiC nanorods obtained through reactions of TiO with carbon nanotubes show that the nanorods grow along both [110] and [111] directions, and that the rods can exhibit either smooth or saw-tooth morphologies. Crystalline SiC nanorods have been produced from reactions of carbon nanotubes with SiO and Si-iodine reactants. The preferred growth direction of these nanorods is [111], although at low reaction temperatures rods with [100] growth axes are also observed. The growth mechanisms leading to these novel nanomaterials have also been addressed. Temperature dependent growth studies of TiC nanorods produced using a Ti-iodine reactant have provided definitive proof for a template or topotactic growth mechanism, and furthermore, have yielded new TiC nanotube materials. Investigations of the growth of SiC nanorods show that in some cases a catalytic mechanism may also be operable. Future research directions and applications of these new carbide nanorod materials are discussed
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Observations on infiltration of silicon carbide compacts with an aluminium alloy
Asthana, R.; Rohatgi, P. K.
1992-01-01
The melt infiltration of ceramic particulates permits an opportunity to observe such fundamental materials phenomena as nucleation, dynamic wetting and growth in constrained environments. Experimental observations are presented on the infiltration behavior and matrix microstructures that form when porous compacts of platelet-shaped single crystals of alpha- (hexagonal) silicon carbide are infiltrated with a liquid 2014 Al alloy. The infiltration process involved counter gravity infiltration of suitably tamped and preheated compacts of silicon carbide platelets under an external pressure in a special pressure chamber for a set period, then by solidification of the infiltrant metal in the interstices of the bed at atmospheric pressure.
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Principles of crystallization, and methods of single crystal growth
International Nuclear Information System (INIS)
Chacra, T.
2010-01-01
Most of single crystals (monocrystals), have distinguished optical, electrical, or magnetic properties, which make from single crystals, key elements in most of technical modern devices, as they may be used as lenses, Prisms, or grating sin optical devises, or Filters in X-Ray and spectrographic devices, or conductors and semiconductors in electronic, and computer industries. Furthermore, Single crystals are used in transducer devices. Moreover, they are indispensable elements in Laser and Maser emission technology.Crystal Growth Technology (CGT), has started, and developed in the international Universities and scientific institutions, aiming at some of single crystals, which may have significant properties and industrial applications, that can attract the attention of international crystal growth centers, to adopt the industrial production and marketing of such crystals. Unfortunately, Arab universities generally, and Syrian universities specifically, do not give even the minimum interest, to this field of Science.The purpose of this work is to attract the attention of Crystallographers, Physicists and Chemists in the Arab universities and research centers to the importance of crystal growth, and to work on, in the first stage to establish simple, uncomplicated laboratories for the growth of single crystal. Such laboratories can be supplied with equipment, which are partly available or can be manufactured in the local market. Many references (Articles, Papers, Diagrams, etc..) has been studied, to conclude the most important theoretical principles of Phase transitions,especially of crystallization. The conclusions of this study, are summarized in three Principles; Thermodynamic-, Morphologic-, and Kinetic-Principles. The study is completed by a brief description of the main single crystal growth methods with sketches, of equipment used in each method, which can be considered as primary designs for the equipment, of a new crystal growth laboratory. (author)
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RBS/channeling analysis of hydrogen-implanted single crystals of FZ silicon and 6H silicon
International Nuclear Information System (INIS)
Irwin, R.B.
1984-01-01
Single crystals of FZ silicon and 6H silicon carbide were implanted with hydrogen ions (50 and 80 keV, respectively) to fluences from 2 x 10 16 H + /cm 2 to 2 x 10 18 H+/cm 2 . The implantations were carried out at three temperatures: approx.95K, 300 K, and approx.800 K. Swelling of the samples was measured by surface profilometry. RBS/channeling was used to obtain the damage profiles and to determine the amount of hydrogen retained in the lattice. The damage profiles are centered around X/sub m/ for the implants into silicon and around R/sub p/ for silicon carbide. For silicon carbide implanted at 95 K and 300 K and for silicon implanted at 95 K, the peak damage region is amorphous for fluences above 8 x 10 16 H + /cm 2 , 4 x 10 17 H + /cm 2 , and 2 x 10 17 H + /cm 2 , respectively. Silicon implanted at 300 and 800 K and silicon carbide implanted at 800 K remain crystalline up to fluences of 1 x 10 18 H + /cm 2 . The channeling damage results agree with previously reported TEM and electron diffraction data. The predictions of a simple disorder-accumulation model with a linear annealing term explains qualitatively the observed damage profiles in silicon carbide. Quantitatively, however, the model predicts faster development of the damage profiles than is observed at low fluences in both silicon and silicon carbide. For samples implanted at 300 and 800 K, the model also predicts substantially less peak disorder than is observed. The effect of the surface, the retained hydrogen, the shape of S/sub D/(X), and the need for a nonlinear annealing term may be responsible for the discrepancy
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Quantum mechanical theory of epitaxial transformation of silicon to silicon carbide
International Nuclear Information System (INIS)
Kukushkin, S A; Osipov, A V
2017-01-01
The paper focuses on the study of transformation of silicon crystal into silicon carbide crystal via substitution reaction with carbon monoxide gas. As an example, the Si(1 0 0) surface is considered. The cross section of the potential energy surface of the first stage of transformation along the reaction pathway is calculated by the method of nudged elastic bands. It is found that in addition to intermediate states associated with adsorption of CO and SiO molecules on the surface, there is also an intermediate state in which all the atoms are strongly bonded to each other. This intermediate state significantly reduces the activation barrier of transformation down to 2.6 eV. The single imaginary frequencies corresponding to the two transition states of this transformation are calculated, one of which is reactant-like, whereas the other is product-like. By methods of quantum chemistry of solids, the second stage of this transformation is described, namely, the transformation of precarbide silicon into silicon carbide. Energy reduction per one cell is calculated for this ‘collapse’ process, and bond breaking energy is also found. Hence, it is concluded that the smallest size of the collapsing islet is 30 nm. It is shown that the chemical bonds of the initial silicon crystal are coordinately replaced by the bonds between Si and C in silicon carbide, which leads to a high quality of epitaxy and a low concentration of misfit dislocations. (paper)
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The growth mechanism of grain boundary carbide in Alloy 690
International Nuclear Information System (INIS)
Li, Hui; Xia, Shuang; Zhou, Bangxin; Peng, Jianchao
2013-01-01
The growth mechanism of grain boundary M 23 C 6 carbides in nickel base Alloy 690 after aging at 715 °C was investigated by high resolution transmission electron microscopy. The grain boundary carbides have coherent orientation relationship with only one side of the matrix. The incoherent phase interface between M 23 C 6 and matrix was curved, and did not lie on any specific crystal plane. The M 23 C 6 carbide transforms from the matrix phase directly at the incoherent interface. The flat coherent phase interface generally lies on low index crystal planes, such as (011) and (111) planes. The M 23 C 6 carbide transforms from a transition phase found at curved coherent phase interface. The transition phase has a complex hexagonal crystal structure, and has coherent orientation relationship with matrix and M 23 C 6 : (111) matrix //(0001) transition //(111) carbide , ¯ > matrix // ¯ 10> transition // ¯ > carbide . The crystal lattice constants of transition phase are c transition =√(3)×a matrix and a transition =√(6)/2×a matrix . Based on the experimental results, the growth mechanism of M 23 C 6 and the formation mechanism of transition phase are discussed. - Highlights: • A transition phase was observed at the coherent interfaces of M 23 C 6 and matrix. • The transition phase has hexagonal structure, and is coherent with matrix and M 23 C 6 . • The M 23 C 6 transforms from the matrix directly at the incoherent phase interface
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DEFF Research Database (Denmark)
Christensen, Claus H.; Schmidt, I.; Carlsson, A.
2005-01-01
A major factor governing the performance of catalytically active particles supported on a zeolite carrier is the degree of dispersion. It is shown that the introduction of noncrystallographic mesopores into zeolite single crystals (silicalite-1, ZSM-5) may increase the degree of particle dispersion....... As representative examples, a metal (Pt), an alloy (PtSn), and a metal carbide (beta-Mo2C) were supported on conventional and mesoporous zeolite carriers, respectively, and the degree of particle dispersion was compared by TEM imaging. On conventional zeolites, the supported material aggregated on the outer surface...
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Microsegregation in Nodular Cast Iron with Carbides
Directory of Open Access Journals (Sweden)
S. Pietrowski
2012-12-01
Full Text Available In this paper results of microsegregation in the newly developed nodular cast iron with carbides are presented. To investigate the pearlitic and bainitic cast iron with carbides obtained by Inmold method were chosen. The distribution of linear elements on the eutectic cell radius was examined. To investigate the microsegregation pearlitic and bainitic cast iron with carbides obtained by Inmold method were chosen.The linear distribution of elements on the eutectic cell radius was examined. Testing of the chemical composition of cast iron metal matrix components, including carbides were carried out. The change of graphitizing and anti-graphitizing element concentrations within eutectic cell was determined. It was found, that in cast iron containing Mo carbides crystallizing after austenite + graphite eutectic are Si enriched.
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Microsegregation in Nodular Cast Iron with Carbides
Directory of Open Access Journals (Sweden)
Pietrowski S.
2012-12-01
Full Text Available In this paper results of microsegregation in the newly developed nodular cast iron with carbides are presented. To investigate the pearlitic and bainitic cast iron with carbides obtained by Inmold method were chosen. The distribution of linear elements on the eutectic cell radius was examined. To investigate the microsegregation pearlitic and bainitic cast iron with carbides obtained by Inmold method were chosen. The linear distribution of elements on the eutectic cell radius was examined. Testing of the chemical composition of cast iron metal matrix components, including carbides were carried out. The change of graphitizing and anti-graphitizing element concentrations within eutectic cell was determined. It was found, that in cast iron containing Mo carbides crystallizing after austenite + graphite eutectic are Si enriched.
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International Nuclear Information System (INIS)
Molnar, P.; Sittner, P.; Novak, V.; Lukas, P.
2008-01-01
A neutron single crystal diffraction method for inspecting the quality of martensite single crystals is introduced. True interface-free martensite single crystals are indispensable for, e.g. measurement of elastic constants of phases by ultrasonic techniques. The neutron diffraction method was used to detect and distinguish the presence of individual lattice correspondence variants of the 2H orthorhombic martensite phase in Cu-Al-Ni as well as to follow the activity of twinning processes during the deformation test on the martensite variant single crystals. When preparing the martensite single variant prism-shaped crystals by compression deformation method, typically a small fraction of second unwanted martensitic variant (compound twin) remains in the prism samples. Due to the very low stress (∼1 MPa) for the compound twinning in many shape memory alloys, it is quite difficult not only to deplete the martensite prisms of all internal interfaces but mainly to keep them in the martensite single variant state for a long time needed for further investigations
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Single-crystal growth of ceria-based materials
International Nuclear Information System (INIS)
Ulbrich, Gregor
2015-01-01
In this work it could be shown that Skull-Melting is a suitable method for growing ceria single crystals. Twenty different ceria-based single crystals could be manufactured. It was possible to dope ceria single crystals with Gd, Sm, Y, Zr, Ti, Ta, and Pr in different concentrations. Also co-doping with the named metals was realized. However, there remain some problems for growing ceria-based single crystals by Skull-Melting. As ignition metal zirconium was used because no ceria-based material works well. For that reason all single crystals show small zirconium contamination. Another problem is the formation of oxygen by the heat-induced reduction of ceria during the melting process. Because of that the skull of sintered material is often destroyed by gas pressure. This problem had to be solved individually for every single crystal. The obtained single crystals were characterized using different methods. To ensure the single crystal character the y were examined by Laue diffraction. All manufactured crystals are single crystals. Also powder diffraction patterns of the milled and oxidized samples were measured. For the determination of symmetry and metric the structural parameters were analyzed by the Rietveld method. All synthesized materials crystallize in space group Fm-3m known from calcium fluoride. The cubic lattice parameter a was determined for all crystals. In the case of series with different cerium and zirconium concentrations a linear correlation between cerium content and cubic lattice parameter was detected. The elemental composition was determined by WDX. All crystals show a homogeneous elemental distribution. The oxygen content was calculated because the WDX method isn't useful for determination.
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2017-10-09
for AGG should be minimal. For this purpose, the seeds for AGG may also be provided externally. This process is called the solid-state single...bonding process . Figure 31 shows (a) the growth of one large single crystal from one small single crystal seed as well as (b) the growth of one...one bi-crystal seed : One large bi-crystal can be grown from one small bi-crystal by SSCG process . Fig. 32. Diffusion bonding process for
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Nondestructive neutron activation analysis of silicon carbide
Energy Technology Data Exchange (ETDEWEB)
Vandergraaf, T. T.; Wikjord, A. G.
1973-10-15
Instrumentel neutron activation analysis was used to determine trace constituents in silicon carbide. Four commercial powders of different origin, an NBS reference material, and a single crystal were characterized. A total of 36 activation species were identified nondestructively by high resolution gamma spectrometry; quantitative results are given for 12 of the more predominant elements. The limitations of the method for certain elements are discussed. Consideration is given to the depression of the neutron flux by impurities with large neutron absorption cross sections. Radiation fields from the various specimens were estimated assuming all radionuclides have reached their saturation activities. (auth)
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Sonnenburg, Kirstin; Smarsly, Bernd M; Brezesinski, Torsten
2009-05-07
We report the preparation of nanoscale carbon-titanium carbide composites with carbide contents of up to 80 wt%. The synthesis yields single-crystalline TiC nanocubes 20-30 nm in diameter embedded in a hierarchical porous carbon matrix. These composites were generated in the form of cylindrical monoliths but can be produced in various shapes using modern sol-gel and nanocasting methods in conjunction with carbothermal reduction. The monolithic material is characterized by a combination of microscopy, diffraction and physisorption. Overall, the results presented in this work represent a concrete design template for the synthesis of non-oxidic nanoscale composites with high surface areas.
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Directory of Open Access Journals (Sweden)
Hui-Jun Guo
2014-09-01
Full Text Available Polytype stability is very important for high quality SiC single crystal growth. However, the growth conditions for the 4H, 6H and 15R polytypes are similar, and the mechanism of polytype stability is not clear. The kinetics aspects, such as surface-step nucleation, are important. The kinetic Monte Carlo method is a common tool to study surface kinetics in crystal growth. However, the present lattice models for kinetic Monte Carlo simulations cannot solve the problem of the competitive growth of two or more lattice structures. In this study, a competitive lattice model was developed for kinetic Monte Carlo simulation of the competition growth of the 4H and 6H polytypes of SiC. The site positions are fixed at the perfect crystal lattice positions without any adjustment of the site positions. Surface steps on seeds and large ratios of diffusion/deposition have positive effects on the 4H polytype stability. The 3D polytype distribution in a physical vapor transport method grown SiC ingot showed that the facet preserved the 4H polytype even if the 6H polytype dominated the growth surface. The theoretical and experimental results of polytype growth in SiC suggest that retaining the step growth mode is an important factor to maintain a stable single 4H polytype during SiC growth.
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Structure of single-chain single crystals of isotactic polystyrene and their radiation resistance
International Nuclear Information System (INIS)
Bu Haishan; Cao Jie; Xu Shengyong; Zhang Ze
1997-01-01
The structure of the single-chain single crystals of isotactic polystyrene (i-PS) was investigated by electron diffraction (ED) and high resolution electron microscopy (HREM). The nano-scale single-chain single crystals were found to be very stable to electron irradiation. According to the unit cell of i-PS crystals, the reflection rings in ED pattern and the lattice fringes in HREM images could be indexed, but the lower-index diffractions were not found. It is proposed that the single-chain single crystals are very small, thus secondary electrons may be allowed to escape and radiation damage is highly reduced, and that there are less lower-index lattice planes in the single-chain single crystals to provide sufficient diffraction intensity for recording. HREM images can be achieved at room temperature in the case of single-chain single crystals because of its stability to electron irradiation, therefore, this might be a novel experimental approach to the study of crystal structure of macromolecules
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Carbides in Nodular Cast Iron with Cr and Mo
Directory of Open Access Journals (Sweden)
S. Pietrowski
2007-07-01
Full Text Available In these paper results of elements microsegregation in carbidic nodular cast iron have been presented. A cooling rate in the centre of the cross-section and on the surface of casting and change of moulding sand temperature during casting crystallization and its self-cooling have been investigated. TDA curves have been registered. The linear distribution of elements concentration in an eutectic grain, primary and secondary carbides have been made. It was found, that there are two kinds of carbides: Cr and Mo enriched. A probable composition of primary and secondary carbides have been presented.
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Disorder and defects are not intrinsic to boron carbide
Mondal, Swastik; Bykova, Elena; Dey, Somnath; Ali, Sk Imran; Dubrovinskaia, Natalia; Dubrovinsky, Leonid; Parakhonskiy, Gleb; van Smaalen, Sander
2016-01-01
A unique combination of useful properties in boron-carbide, such as extreme hardness, excellent fracture toughness, a low density, a high melting point, thermoelectricity, semi-conducting behavior, catalytic activity and a remarkably good chemical stability, makes it an ideal material for a wide range of technological applications. Explaining these properties in terms of chemical bonding has remained a major challenge in boron chemistry. Here we report the synthesis of fully ordered, stoichiometric boron-carbide B13C2 by high-pressure-high-temperature techniques. Our experimental electron-density study using high-resolution single-crystal synchrotron X-ray diffraction data conclusively demonstrates that disorder and defects are not intrinsic to boron carbide, contrary to what was hitherto supposed. A detailed analysis of the electron density distribution reveals charge transfer between structural units in B13C2 and a new type of electron-deficient bond with formally unpaired electrons on the C-B-C group in B13C2. Unprecedented bonding features contribute to the fundamental chemistry and materials science of boron compounds that is of great interest for understanding structure-property relationships and development of novel functional materials.
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Growth of single crystals of BaFe12O19 by solid state crystal growth
International Nuclear Information System (INIS)
Fisher, John G.; Sun, Hengyang; Kook, Young-Geun; Kim, Joon-Seong; Le, Phan Gia
2016-01-01
Single crystals of BaFe 12 O 19 are grown for the first time by solid state crystal growth. Seed crystals of BaFe 12 O 19 are buried in BaFe 12 O 19 +1 wt% BaCO 3 powder, which are then pressed into pellets containing the seed crystals. During sintering, single crystals of BaFe 12 O 19 up to ∼130 μm thick in the c-axis direction grow on the seed crystals by consuming grains from the surrounding polycrystalline matrix. Scanning electron microscopy-energy dispersive spectroscopy analysis shows that the single crystal and the surrounding polycrystalline matrix have the same chemical composition. Micro-Raman scattering shows the single crystal to have the BaFe 12 O 19 structure. The optimum growth temperature is found to be 1200 °C. The single crystal growth behavior is explained using the mixed control theory of grain growth. - Highlights: • Single crystals of BaFe 12 O 19 are grown by solid state crystal growth. • A single crystal up to ∼130 μm thick (c-axis direction) grows on the seed crystal. • The single crystal and surrounding ceramic matrix have similar composition. • Micro-Raman scattering shows the single crystal has the BaFe 12 O 19 structure.
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Relaxor-PT Single Crystal Piezoelectric Sensors
Directory of Open Access Journals (Sweden)
Xiaoning Jiang
2014-07-01
Full Text Available Relaxor-PbTiO3 piezoelectric single crystals have been widely used in a broad range of electromechanical devices, including piezoelectric sensors, actuators, and transducers. This paper reviews the unique properties of these single crystals for piezoelectric sensors. Design, fabrication and characterization of various relaxor-PT single crystal piezoelectric sensors and their applications are presented and compared with their piezoelectric ceramic counterparts. Newly applicable fields and future trends of relaxor-PT sensors are also suggested in this review paper.
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Preparation of TiC single crystals
International Nuclear Information System (INIS)
Scheerer, B.; Fink, J.; Reichardt, W.
1975-07-01
TiC single crystals were prepared by vertical zone melting for measurements of the phonon dispersion by inelastic neutron scattering. The influence of the starting material and of the growing conditions on the growth of the crystal were studied. The crystals were characterized by chemical methods, EMX and neutron diffraction. It was possible to grow single crystals with a volume of up to 0.6 cm 3 and mosaic spread of less then 0.4 0 . (orig.) [de
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Structure and thermal expansion of NbC complex carbides
International Nuclear Information System (INIS)
Khatsinskaya, I.M.; Chaporova, I.N.; Cheburaeva, R.F.; Samojlov, A.I.; Logunov, A.V.; Ignatova, I.A.; Dodonova, L.P.
1983-01-01
Alloying dependences of the crystal lattice parameters at indoor temperature and coefficient of thermal linear exspansion within a 373-1273 K range are determined for complex NbC-base carbides by the method of mathematical expemental design. It is shown that temperature changes in the linear expansion coefficient of certain complex carbides as distinct from NbC have an anomaly (minimum) within 773-973 K caused by occurring reversible phase transformations. An increase in the coefficient of thermal linear expansion and a decrease in hardness of NbC-base tungsten-, molybdenum-, vanadium- and hafnium-alloyed carbides show a weakening of a total chemical bond in the complex carbides during alloying
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Electrically Anisotropic Layered Perovskite Single Crystal
Li, Ting-You
2016-04-01
Organic-inorganic hybrid perovskites (OIHPs), which are promising materials for electronic and optoelectronic applications (1-10), have made into layered organic-inorganic hybrid perovskites (LOIHPs). These LOIHPs have been applied to thin-film transistors, solar cells and tunable wavelength phosphors (11-18). It is known that devices fabricated with single crystal exhibit the superior performance, which makes the growth of large-sized single crystals critical for future device applications (19-23). However, the difficulty in growing large-sized LOIHPs single crystal with superior electrical properties limits their practical applications. Here, we report a method to grow the centimeter-scaled LOIHP single crystal of [(HOC2H4NH3)2PbI4], demonstrating the potentials in mass production. After that, we reveal anisotropic electrical and optoelectronic properties which proved the carrier propagating along inorganic framework. The carrier mobility of in-inorganic-plane (in-plane) devices shows the average value of 45 cm2 V–1 s–1 which is about 100 times greater than the record of LOIHP devices (15), showing the importance of single crystal in device application. Moreover, the LOIHP single crystals show its ultra-short carrier lifetime of 42.7 ps and photoluminescence quantum efficiency (PLQE) of 25.4 %. We expect this report to be a start of LOIHPs for advanced applications in which the anisotropic properties are needed (24-25), and meets the demand of high-speed applications and fast-response applications.
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International Nuclear Information System (INIS)
Utkina, T.G.
1995-01-01
Niobium carbide, NbC x , belongs to the family of so called interstital phases. Metal atoms form a face-centered cubic lattice, whose octahedral interstices are occupied by carbon atoms. The fraction (1 - x) of interstices remain vacant, and this determines the nonstoichiometry of these phases: most of them are characterized by a wide homogeneity range, 0.70 m ≅ 3308 - 3886 K). In contrast, the metalloid atoms exhibit high mobility at relatively low temperatures. For compositions close to Nb 6 C 5 (0.81 O-D ≅ 1300 K. The presence of vacancies in the carbon sublattice considerably affects the physical properties of carbides, which depend not only on total vacancy concentration but also on their distribution, i.e., on the degree of ordering (both short-range and long-range order) in the metalloid sublattice. The purpose of this work is to study the effects of such ordering on the superconducting properties of Nb 6 C 5 single crystals
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Crystal growth and scintillation properties of Pr-doped SrI2 single crystals
Yokota, Yuui; Ito, Tomoki; Yoshino, Masao; Yamaji, Akihiro; Ohashi, Yuji; Kurosawa, Shunsuke; Kamada, Kei; Yoshikawa, Akira
2018-04-01
Pr-doped SrI2 (Pr:SrI2) single crystals with various Pr concentrations were grown by the halide-micro-pulling-down (H-μ-PD) method, and the scintillation properties were investigated. Pr1%:SrI2 single crystal with high transparency could be grown by the H-μ-PD method while Pr2, 3 and 5%:SrI2 single crystals included some cracks and opaque parts. In the photoluminescence spectrum of the Pr1%:SrI2 single crystal, an emission peak originated from the Pr3+ ion was observed around 435 nm while the radioluminescence spectra showed an emission peak around 535 nm for the undoped SrI2 and Pr:SrI2 single crystals. Light yields of Pr1, 2, 3 and 5%:SrI2 single crystals under γ-ray irradiation were 7700, 8700, 7200 and 6700 photons/MeV, respectively. Decay times of Pr1 and 2%:SrI2 single crystals under γ-ray irradiation were 55.9 and 35.0 ns of the fast decay component, and 435 and 408 ns of the slow decay component, respectively.
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Distribution and characterization of iron in implanted silicon carbide
International Nuclear Information System (INIS)
Bentley, J.; Romana, L.J.; Horton, L.L.; McHargue, C.J.
1991-01-01
Analytical electron microscopy (AEM) and Rutherford backscattering spectroscopy-ion channeling (RBS-C) have been used to characterize single crystal α-silicon carbide implanted at room temperature with 160 keV 57 Fe ions to fluences of 1, 3, and 6 x 10 16 ions/cm 2 . Best correlations among AEM, RBS, and TRIM calculations were obtained assuming a density of the amorphized implanted regions equal to that of crystalline SiC. No iron-rich precipitates or clusters were detected by AEM. Inspection of the electron energy loss fine structure for iron in the implanted specimens suggests that the iron is not metallically-bonded, supporting conclusions from earlier conversion electron Moessbauer spectroscopy (CEMS) studies. In-situ annealing surprisingly resulted in crystallization at 600 degrees C with some redistribution of the implanted iron
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Free-standing nanomechanical and nanophotonic structures in single-crystal diamond
Burek, Michael John
Realizing complex three-dimensional structures in a range of material systems is critical to a variety of emerging nanotechnologies. This is particularly true of nanomechanical and nanophotonic systems, both relying on free-standing small-scale components. In the case of nanomechanics, necessary mechanical degrees of freedom require physically isolated structures, such as suspended beams, cantilevers, and membranes. For nanophotonics, elements like waveguides and photonic crystal cavities rely on light confinement provided by total internal reflection or distributed Bragg reflection, both of which require refractive index contrast between the device and surrounding medium (often air). Such suspended nanostructures are typically fabricated in a heterolayer structure, comprising of device (top) and sacrificial (middle) layers supported by a substrate (bottom), using standard surface nanomachining techniques. A selective, isotropic etch is then used to remove the sacrificial layer, resulting in free-standing devices. While high-quality, crystalline, thin film heterolayer structures are readily available for silicon (as silicon-on-insulator (SOI)) or III-V semiconductors (i.e. GaAs/AlGaAs), there remains an extensive list of materials with attractive electro-optic, piezoelectric, quantum optical, and other properties for which high quality single-crystal thin film heterolayer structures are not available. These include complex metal oxides like lithium niobate (LiNbO3), silicon-based compounds such as silicon carbide (SiC), III-V nitrides including gallium nitride (GaN), and inert single-crystals such as diamond. Diamond is especially attractive for a variety of nanoscale technologies due to its exceptional physical and chemical properties, including high mechanical hardness, stiffness, and thermal conductivity. Optically, it is transparent over a wide wavelength range (from 220 nm to the far infrared), has a high refractive index (n ~ 2.4), and is host to a vast
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Electrically Anisotropic Layered Perovskite Single Crystal
Li, Ting-You
2016-01-01
-23). However, the difficulty in growing large-sized LOIHPs single crystal with superior electrical properties limits their practical applications. Here, we report a method to grow the centimeter-scaled LOIHP single crystal of [(HOC2H4NH3)2PbI4], demonstrating
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Properties of single crystal beta''-aluminas
International Nuclear Information System (INIS)
Bates, J.B.; Brown, G.M.; Kaneda, T.; Brundage, W.E.; Wang, J.C.; Engstrom, H.
1979-01-01
Large single crystals of sodium beta''-alumina were grown by slow evaporation of Na 2 O at 1690 0 C from a mixture of Na 2 CO 3 , MgO, and Al 2 O 3 . Polarized Raman measurements were made on the Na β'' single crystals and on single crystals of Li, K, Rb, and Ag β'' prepared by ion exchange of Na β''. The low frequency Raman spectra of Na, K, Rb, and Ag β'' contained four or more bands due to vibrations of the mobile cations. These results were analyzed by assuming the spectra to be due to the normal modes of a defect cluster consisting of a cation vacancy surrounded by three cations. From model calculations, the Raman band of Na β'' at 33 cm -1 is assigned to the attempt mode for diffusion of Na + ions. The structure of a Ag β'' single crystal was investigated by neutron diffraction, and 20% of the Ag + ion sites were found to be vacant
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Ultra-large single crystals by abnormal grain growth.
Kusama, Tomoe; Omori, Toshihiro; Saito, Takashi; Kise, Sumio; Tanaka, Toyonobu; Araki, Yoshikazu; Kainuma, Ryosuke
2017-08-25
Producing a single crystal is expensive because of low mass productivity. Therefore, many metallic materials are being used in polycrystalline form, even though material properties are superior in a single crystal. Here we show that an extraordinarily large Cu-Al-Mn single crystal can be obtained by abnormal grain growth (AGG) induced by simple heat treatment with high mass productivity. In AGG, the sub-boundary energy introduced by cyclic heat treatment (CHT) is dominant in the driving pressure, and the grain boundary migration rate is accelerated by repeating the low-temperature CHT due to the increase of the sub-boundary energy. With such treatment, fabrication of single crystal bars 70 cm in length is achieved. This result ensures that the range of applications of shape memory alloys will spread beyond small-sized devices to large-scale components and may enable new applications of single crystals in other metallic and ceramics materials having similar microstructural features.Growing large single crystals cheaply and reliably for structural applications remains challenging. Here, the authors combine accelerated abnormal grain growth and cyclic heat treatments to grow a superelastic shape memory alloy single crystal to 70 cm.
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Directory of Open Access Journals (Sweden)
A.M. Kuzei
2017-12-01
Full Text Available Using the methods of electronic scanning microstructure and X-ray analysis, the influence of the structure of diamond-containing composite materials on the cutting ability of the tool for circular grinding of diamond single crystals has been studied. It is shown that the use of an oxide-hydroxide glass with a spreading temperature of 570–590 K as a precursor of the binder leads to the formation of melt films on the surface of silicon carbide and diamond particles at 600–630 K and the glass content in the batch is 10 vol. %. The conversion of oxidehydroxide glass films to oxide films proceeds at 700–775 K during the sintering of the composite material. Depending on the volume content of the glass in the charge, the porosity of the compact, three types of structure of composite materials are distinguished: a volumetric skeleton of glass-clad diamond particles and silicon carbide with pores at the sites of multiple compounds; a frame made of glass-clad diamond particles and silicon carbide with glass pores in places of multiple connections; a matrix of glass and the particles of diamond, silicon carbide and pores located in it. The maximum cutting ability of the tool for circular grinding of diamond is provided by a composite material with a structure of the first type.
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Isotopically pure single crystal epitaxial diamond films and their preparation
International Nuclear Information System (INIS)
Banholzer, W.F.; Anthony, T.R.; Williams, D.M.
1992-01-01
The present invention is directed to the production of single crystal diamond consisting of isotopically pure carbon-12 or carbon-13. In the present invention, isotopically pure single crystal diamond is grown on a single crystal substrate directly from isotopically pure carbon-12 or carbon-13. One method for forming isotopically pure single crystal diamond comprises the steps of placing in a reaction chamber a single substrate heated to an elevated diamond forming temperature. Another method for forming isotopically pure single crystal diamond comprises diffusing isotopically pure carbon-12 or carbon-13 through a metallic catalyst under high pressure to a region containing a single crystal substrate to form an isotopically pure single crystal diamond layer on said single crystal substrate
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Confinement stabilises single crystal vaterite rods.
Schenk, AS; Albarracin, EJ; Kim, YY; Ihli, J; Meldrum, FC
2014-01-01
Single-crystals of vaterite, the least-stable anhydrous polymorph of CaCO3, are rare in biogenic and synthetic systems. We here describe the synthesis of high aspect ratio single crystal vaterite rods under additive-free conditions by precipitating CaCO3 within the cylindrical pores of track-etch membranes.
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Reshock and release response of aluminum single crystal
International Nuclear Information System (INIS)
Huang, H.; Asay, J. R.
2007-01-01
Reshock and release experiments were performed on single crystal aluminum along three orientations and on polycrystalline 1050 aluminum with 50 μm grain size at shock stresses of 13 and 21 GPa to investigate the mechanisms for previously observed quasielastic recompression behavior. Particle velocity profiles obtained during reshocking both single crystals and polycrystalline aluminum from initial shock stresses of 13-21 GPa show similar quasielastic recompression behavior. Quasielastic release response is also observed in all single crystals, but the magnitude of the effect is crystal orientation dependent, with [111] and [110] exhibiting more ideal elastic-plastic release for unloading from the shocked state than for the [100] orientation and polycrystalline aluminum. The quasielastic response of 1050 aluminum is intermediate to that of the [100] and [111] orientations. Comparison of the wave profiles obtained for both unloading and reloading of single crystals and polycrystalline 1050 aluminum from shocked states suggests that the observed quasielastic response of polycrystalline aluminum results from the averaging response of single crystals for shock propagation along different orientations, and that the response of 1050 aluminum with large grain boundaries is not significantly different from the results obtained on single crystal aluminum. The yield strength of the single crystals and 1050 aluminum is found to increase with shock stress, which is consistent with previous results [H. Huang and I. R. Asay, J. Appl. Phys. 98, 033524 (2005)
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Growth of single crystals of BaFe12O19 by solid state crystal growth
Fisher, John G.; Sun, Hengyang; Kook, Young-Geun; Kim, Joon-Seong; Le, Phan Gia
2016-10-01
Single crystals of BaFe12O19 are grown for the first time by solid state crystal growth. Seed crystals of BaFe12O19 are buried in BaFe12O19+1 wt% BaCO3 powder, which are then pressed into pellets containing the seed crystals. During sintering, single crystals of BaFe12O19 up to ∼130 μm thick in the c-axis direction grow on the seed crystals by consuming grains from the surrounding polycrystalline matrix. Scanning electron microscopy-energy dispersive spectroscopy analysis shows that the single crystal and the surrounding polycrystalline matrix have the same chemical composition. Micro-Raman scattering shows the single crystal to have the BaFe12O19 structure. The optimum growth temperature is found to be 1200 °C. The single crystal growth behavior is explained using the mixed control theory of grain growth.
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Formation mechanism of spheroidal carbide in ultra-low carbon ductile cast iron
Directory of Open Access Journals (Sweden)
Bin-guo Fu
2016-09-01
Full Text Available The formation mechanism of the spheroidal carbide in the ultra-low carbon ductile cast iron fabricated by the metal mold casting technique was systematically investigated. The results demonstrated that the spheroidal carbide belonged to eutectic carbide and crystallized in the isolated eutectic liquid phase area. The formation process of the spheroidal carbide was related to the contact and the intersection between the primary dendrite and the secondary dendrite of austenite. The oxides of magnesium, rare earths and other elements can act as heterogeneous nucleation sites for the spheroidal carbide. It was also found that the amount of the spheroidal carbide would increase with an increase in carbon content. The cooling rate has an important influence on the spheroidal carbide under the same chemical composition condition.
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Self-templated synthesis of single-crystal and single-domain ferroelectric nanoplates
Chao, Chunying; Ren, Zhaohui; Zhu, Yihan; Xiao, Zhen; Liu, Zhenya; Xú , Gang; Mai, Jiangquan; Li, Xiang; Shen, Ge; Han, Gaorong
2012-01-01
Free-standing single-crystal PbTiO 3 nanoplates (see picture) were synthesized by a facile hydrothermal method. A "self-templated" crystal growth is presumed to lead to the formation of the PbTiO 3 nanoplates, which have ferroelectric single
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Morphology study of refractory carbide powders
International Nuclear Information System (INIS)
Vavrda, J.; Blazhikova, Ya.
1982-01-01
Refractory carbides were investigated using JSM-U3 electron microscope of Joelco company at 27 KV accelerating voltage. Some photographs of each powder were taken with different enlargements to characterise the sample upon the whole. It was shown that morphological and especially topographic study of powders enables to learn their past history (way of fabrication and treatment). The presence of steps of compact particle fractures and cracks is accompanied by occurence of fine dispersion of carbides subjected to machining after facrication. On the contrary, the character of crystallographic surfaces and features of surface growth testify to the way of crystallization
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Inkjet printing of single-crystal films.
Minemawari, Hiromi; Yamada, Toshikazu; Matsui, Hiroyuki; Tsutsumi, Jun'ya; Haas, Simon; Chiba, Ryosuke; Kumai, Reiji; Hasegawa, Tatsuo
2011-07-13
The use of single crystals has been fundamental to the development of semiconductor microelectronics and solid-state science. Whether based on inorganic or organic materials, the devices that show the highest performance rely on single-crystal interfaces, with their nearly perfect translational symmetry and exceptionally high chemical purity. Attention has recently been focused on developing simple ways of producing electronic devices by means of printing technologies. 'Printed electronics' is being explored for the manufacture of large-area and flexible electronic devices by the patterned application of functional inks containing soluble or dispersed semiconducting materials. However, because of the strong self-organizing tendency of the deposited materials, the production of semiconducting thin films of high crystallinity (indispensable for realizing high carrier mobility) may be incompatible with conventional printing processes. Here we develop a method that combines the technique of antisolvent crystallization with inkjet printing to produce organic semiconducting thin films of high crystallinity. Specifically, we show that mixing fine droplets of an antisolvent and a solution of an active semiconducting component within a confined area on an amorphous substrate can trigger the controlled formation of exceptionally uniform single-crystal or polycrystalline thin films that grow at the liquid-air interfaces. Using this approach, we have printed single crystals of the organic semiconductor 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C(8)-BTBT) (ref. 15), yielding thin-film transistors with average carrier mobilities as high as 16.4 cm(2) V(-1) s(-1). This printing technique constitutes a major step towards the use of high-performance single-crystal semiconductor devices for large-area and flexible electronics applications.
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Controlled growth of filamentary crystals and fabrication of single-crystal whisker probes
International Nuclear Information System (INIS)
Givargizov, E. I.
2006-01-01
The growth of filamentary crystals (whiskers) on a single-crystal substrate through the vapour-liquid-solid mechanism is described. The possibility of fabricating oriented systems of whiskers on the basis of this mechanism of crystal growth is noted. A phenomenon that is important for nanotechnology is noted: the existence of a critical diameter of whiskers, below which they are not formed. The phenomenon of radial periodic instability, which is characteristic of nanowhiskers, is described and the ways of its elimination are shown. The possibility of transforming whiskers into single-crystal tips and the growth of crystalline diamond particles at their apices are noted as important for practice. Possible applications of systems of whiskers and tips are described briefly. Particular attention is paid to the latest direction in whisker technology-fabrication of single-crystal whisker probes for atomic force microscopy
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Crystal structure and magnetic susceptibility of UOSe single crystals
International Nuclear Information System (INIS)
Kaczorowski, D.; Muenster Univ.; Poettgen, R.; Jeitschko, W.; Gajek, Z.; Zygmunt, A.
1993-01-01
The crystal structure and magnetic susceptibility behaviour of UOSe single crystals have been studied. UOSe crystalizes in the tetragonal PbFC1-type structure (space group P4/nmm) with the lattice parameters: a = 390.38(5) pm and c = 698.05(9) pm. It orders antiferromagnetically at T N =100±2 K and exhibits a very strong anisotropy in the susceptibility vs temperature variation. The magnetic and thermodynamic properties of UOSe are successfully interpreted in the framework of a perturbative ab initio crystal field approach. (Author)
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Crystal structure and magnetic susceptibility of UOSe single crystals
Energy Technology Data Exchange (ETDEWEB)
Kaczorowski, D. (Polish Academy of Sciences, Wroclaw (Poland). Inst. for Low Temperature and Structure Research Muenster Univ. (Germany). Anorganisch-Chemisches Inst.); Poettgen, R.; Jeitschko, W. (Muenster Univ. (Germany). Anorganisch-Chemisches Inst.); Gajek, Z.; Zygmunt, A. (Polish Academy of Sciences, Wroclaw (Poland). Inst. for Low Temperature and Structure Research)
1993-01-01
The crystal structure and magnetic susceptibility behaviour of UOSe single crystals have been studied. UOSe crystalizes in the tetragonal PbFC1-type structure (space group P4/nmm) with the lattice parameters: a = 390.38(5) pm and c = 698.05(9) pm. It orders antiferromagnetically at T[sub N]=100[+-]2 K and exhibits a very strong anisotropy in the susceptibility vs temperature variation. The magnetic and thermodynamic properties of UOSe are successfully interpreted in the framework of a perturbative ab initio crystal field approach. (Author).
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Energy Technology Data Exchange (ETDEWEB)
Pharr, M.; Katoh, Y.; Bei, H.
2006-01-01
Along with other desirable properties, the ability of silicon carbide (SiC) to retain high strength after elevated temperature exposures to neutron irradiation renders it potentially applicable in fusion and advanced fission reactors. However, properties of the material such as room temperature fracture toughness must be thoroughly characterized prior to such practical applications. The objective of this work is to investigate the dependence of fracture toughness on crystallographic orientation for single-crystalline β-SiC. X-ray diffraction was first performed on the samples to determine the orientation of the crystal. Nanoindentation was used to determine a hardness of 39.1 and 35.2 GPa and elastic modulus of 474 and 446 GPa for the single-crystalline and polycrystalline samples, respectively. Additionally, crack lengths and indentation diagonals were measured via a Vickers micro-hardness indenter under a load of 100 gf for different crystallographic orientations with indentation diagonals aligned along fundamental cleavage planes. Upon examination of propagation direction of cracks, the cracks usually did not initiate and propagate from the corners of the indentation where the stresses are concentrated but instead from the indentation sides. Such cracks clearly moved along the {1 1 0} family of planes (previously determined to be preferred cleavage plane), demonstrating that the fracture toughness of SiC is comparatively so much lower along this set of planes that the lower energy required to cleave along this plane overpowers the stress-concentration at indentation corners. Additionally, fracture toughness in the <1 1 0> direction was 1.84 MPa·m1/2, lower than the 3.46 MPa·m1/2 measured for polycrystalline SiC (which can serve as an average of a spectrum of orientations), further demonstrating that single-crystalline β-SiC has a strong fracture toughness anisotropy.
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Energy Technology Data Exchange (ETDEWEB)
Wang, Tao; Zhuang, Hao; Jiang, Xin, E-mail: xin.jiang@uni-siegen.de
2015-12-30
Graphical abstract: - Highlights: • Novel diamond/beta-silicon carbide composite gradient interlayers were synthesized. • The interlayer features a cross-sectional gradient with increasing diamond content. • Diamond top layers and the interlayers were deposited in one single process. • The adhesion of the diamond film is drastically improved by employing the interlayer. • The stress was suppressed by manipulating the distribution of diamond and silicon carbide. - Abstract: Deposition of adherent diamond films on cobalt-cemented tungsten carbide substrates has been realized by application of diamond/beta-silicon carbide composite interlayers. Diamond top layers and the interlayers were deposited in one single process by hot filament chemical vapor deposition technique. Two different kinds of interlayers have been employed, namely, gradient interlayer and interlayer with constant composition. The distribution of diamond and beta-silicon carbide phases was precisely controlled by manipulating the gas phase composition. X-ray diffraction and Raman spectroscopy were employed to determine the existence of diamond, beta-silicon carbide and cobalt silicides (Co{sub 2}Si, CoSi) phases, as well as the quality of diamond crystal and the residual stress in the films. Rockwell-C indentation tests were carried out to evaluate the film adhesion. It is revealed that the adhesion of the diamond film is drastically improved by employing the interlayer. This is mainly influenced by the residual stress in the diamond top layer, which is induced by the different thermal expansion coefficient of the film and the substrate. It is even possible to further suppress the stress by manipulating the distribution of diamond and beta-silicon carbide in the interlayer. The most adhesive diamond film on cemented carbide is thus obtained by employing a gradient composite interlayer.
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Distributed Feedback Laser Based on Single Crystal Perovskite
Sun, Shang; Xiao, Shumin; Song, Qinghai
2017-06-01
We demonstrate a single crystal perovskite based, with grating-structured photoresist on top, highly polarized distributed feedback laser. A lower laser threshold than the Fabry-Perot mode lasers from the same single crystal CH3NH3PbBr3 microplate was obtained. Single crystal CH3NH3PbBr3 microplates was synthesized with one-step solution processed precipitation method. Once the photoresist on top of the microplate was patterned with electron beam, the device was realized. This one-step fabrication process utilized the advantage of single crystal to the greatest extend. The ultra-low defect density in single crystalline microplate offer an opportunity for lower threshold lasing action compare with poly-crystal perovskite films. In the experiment, the lasing action based on the distributed feedback grating design was found with lower threshold and higher intensity than the Fabry-Perot mode lasers supported by the flat facets of the same microplate.
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Growth and surface topography of WSe_2 single crystal
International Nuclear Information System (INIS)
Dixit, Vijay; Vyas, Chirag; Pataniya, Pratik; Jani, Mihir; Pathak, Vishal; Patel, Abhishek; Pathak, V. M.; Patel, K. D.; Solanki, G. K.
2016-01-01
Tungsten Di-Selenide belongs to the family of TMDCs showing their potential applications in the fields of Optoelectronics and PEC solar cells. Here in the present investigation single crystals of WSe_2 were grown by Direct Vapour Transport Technique in a dual zone furnace having temperature difference of 50 K between the two zones. These single crystals were characterized by EDAX which confirms the stiochiometry of the grown crystals. Surface topography of the crystal was studied by optical micrograph showing the left handed spirals on the surface of WSe_2 crystals. Single crystalline nature of the crystals was confirmed by SAED.
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Single Crystals Grown Under Unconstrained Conditions
Sunagawa, Ichiro
Based on detailed investigations on morphology (evolution and variation in external forms), surface microtopography of crystal faces (spirals and etch figures), internal morphology (growth sectors, growth banding and associated impurity partitioning) and perfection (dislocations and other lattice defects) in single crystals, we can deduce how and by what mechanism the crystal grew and experienced fluctuation in growth parameters through its growth and post-growth history under unconstrained condition. The information is useful not only in finding appropriate way to growing highly perfect and homogeneous single crystals, but also in deciphering letters sent from the depth of the Earth and the Space. It is also useful in discriminating synthetic from natural gemstones. In this chapter, available methods to obtain molecular information are briefly summarized, and actual examples to demonstrate the importance of this type of investigations are selected from both natural minerals (diamond, quartz, hematite, corundum, beryl, phlogopite) and synthetic crystals (SiC, diamond, corundum, beryl).
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Production and several properties of single crystal austenitic stainless steels
International Nuclear Information System (INIS)
Okamoto, Kazutaka; Yoshinari, Akira; Kaneda, Junya; Aono, Yasuhisa; Kato, Takahiko
1998-01-01
The single crystal austenitic stainless steels Type 316L and 304L were grown in order to improve the resistance to stress corrosion cracking (SCC) using a unidirectional solidification method which can provide the large size single crystals. The mechanical properties and the chemical properties were examined. The orientation and temperature dependence of tensile properties of the single crystals were measured. The yield stress of the single crystal steels are lower than those of the conventional polycrystal steels because of the grain boundary strength cannot be expected in the single crystal steels. The tensile properties of the single crystal austenitic stainless steel Type 316L depend strongly on the orientation. The tensile strength in orientation are about 200 MPa higher than those in the and orientations. The microstructure of the single crystal consists of a mixture of the continuous γ-austenitic single crystal matrix and the δ-ferrite phase so that the effects of the γ/δ boundaries on the chemical properties were studied. The effects of the δ-ferrite phases and the γ/δ boundaries on the resistance to SCC were examined by the creviced bent beam test (CBB test). No crack is observed in all the CBB test specimens of the single crystals, even at the γ/δ boundaries. The behavior of the radiation induced segregation (RIS) at the γ/δ boundaries in the single crystal austenitic stainless steel Type 316L was evaluated by the electron irradiation test in the high voltage electron microscope (HVEM). The depletion of oversized solute chromium at the γ/δ boundary in the single crystal austenitic stainless steel Type 316L is remarkably lower than that at the grain boundary in the polycrystalline-type 316L. (author)
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Thermionic emission of cermets made of refractory carbides
International Nuclear Information System (INIS)
Samsonow, G.W.; Bogomol, I.W.; Ochremtschuk, L.N.; Podtschernjajewa, I.A.; Fomenko, W.S.
1975-01-01
In order to improve the resistance to thermal variations of refractory carbides having good behavior for thermionic emission, they have been combined with transition metals d. Thermionic emission was studied with cermets in compact samples. Following systems were examined: TiC-Nb, TiC-Mo, TiC-W, ZrC-Nb, ZrC-Mo, ZrC-W, WC-Mo with compositions of: 75% M 1 C-25% M 2 , 50%M 1 C-50%M 2 , 25%M 1 C-75%M 2 . When following the variation of electron emission energy phi versus the composition, it appears that in the range of mixed crystals (M 1 M 2 )C, phi decreases and the resistance to thermal variations of these phases is higher than that of individual carbides. The study of obtained cermets shows that their resistance to thermal variations is largely superior to the one of starting carbides; TiC and ZrC carbides, combined with molybdenum and tungsten support the highest number of thermic cycles
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Organic field-effect transistors using single crystals
International Nuclear Information System (INIS)
Hasegawa, Tatsuo; Takeya, Jun
2009-01-01
Organic field-effect transistors using small-molecule organic single crystals are developed to investigate fundamental aspects of organic thin-film transistors that have been widely studied for possible future markets for 'plastic electronics'. In reviewing the physics and chemistry of single-crystal organic field-effect transistors (SC-OFETs), the nature of intrinsic charge dynamics is elucidated for the carriers induced at the single crystal surfaces of molecular semiconductors. Materials for SC-OFETs are first reviewed with descriptions of the fabrication methods and the field-effect characteristics. In particular, a benchmark carrier mobility of 20-40 cm 2 Vs -1 , achieved with thin platelets of rubrene single crystals, demonstrates the significance of the SC-OFETs and clarifies material limitations for organic devices. In the latter part of this review, we discuss the physics of microscopic charge transport by using SC-OFETs at metal/semiconductor contacts and along semiconductor/insulator interfaces. Most importantly, Hall effect and electron spin resonance (ESR) measurements reveal that interface charge transport in molecular semiconductors is properly described in terms of band transport and localization by charge traps. (topical review)
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Prospects for the synthesis of large single-crystal diamonds
International Nuclear Information System (INIS)
Khmelnitskiy, R A
2015-01-01
The unique properties of diamond have stimulated the study of and search for its applications in many fields, including optics, optoelectronics, electronics, biology, and electrochemistry. Whereas chemical vapor deposition allows the growth of polycrystalline diamond plates more than 200 mm in diameter, most current diamond application technologies require large-size (25 mm and more) single-crystal diamond substrates or films suitable for the photolithography process. This is quite a challenge, because the largest diamond crystals currently available are 10 mm or less in size. This review examines three promising approaches to fabricating large-size diamond single crystals: growing large-size single crystals, the deposition of heteroepitaxial diamond films on single-crystal substrates, and the preparation of composite diamond substrates. (reviews of topical problems)
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Growth of Ga2O3 single crystal
龍見, 雅美; 小池, 裕之; 市木, 伸明; Tatsumi, Masami; Koike, Hiroyuki; Ichiki, Nobuaki
2010-01-01
Single crystals of β-Ga2O3 for substrates of GaN LED were grown by Floating Zone(FZ) method. The transparent single crystals of 5-6 mm in diameter were reproducibly obtained by applying necking procedure and the preferential growth direction was . Many cracks were induced along the cleavage plane of (100) in slicing process, which is related to thermal stress and the growth direction. However, this preliminary growth experiments suggested that β-Ga2O3 single crystal is promising as a substrat...
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Oxidation of mullite-zirconia-alumina-silicon carbide composites
International Nuclear Information System (INIS)
Baudin, C.; Moya, J.S.
1990-01-01
This paper reports the isothermal oxidation of mullite-alumina-zirconia-silicon carbide composites obtained by reaction sintering studied in the temperature interval 800 degrees to 1400 degrees C. The kinetics of the oxidation process was related to the viscosity of the surface glassy layer as well as to the crystallization of the surface film. The oxidation kinetics was halted to T ≤ 1300 degrees C, presumably because of crystallization
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Energy Technology Data Exchange (ETDEWEB)
Nakamura, Daisuke; Suzumura, Akitoshi; Shigetoh, Keisuke [Toyota Central R and D Labs., Inc., Nagakute, Aichi 480-1192 (Japan)
2015-02-23
Highly reliable low-cost protective coatings have been sought after for use in crucibles and susceptors for bulk and epitaxial film growth processes involving wide bandgap materials. Here, we propose a production technique for ultra-thick (50–200 μmt) tantalum carbide (TaC) protective coatings on graphite substrates, which consists of TaC slurry application and subsequent sintering processes, i.e., a wet ceramic process. Structural analysis of the sintered TaC layers indicated that they have a dense granular structure containing coarse grain with sizes of 10–50 μm. Furthermore, no cracks or pinholes penetrated through the layers, i.e., the TaC layers are highly reliable protective coatings. The analysis also indicated that no plastic deformation occurred during the production process, and the non-textured crystalline orientation of the TaC layers is the origin of their high reliability and durability. The TaC-coated graphite crucibles were tested in an aluminum nitride (AlN) sublimation growth process, which involves extremely corrosive conditions, and demonstrated their practical reliability and durability in the AlN growth process as a TaC-coated graphite. The application of the TaC-coated graphite materials to crucibles and susceptors for use in bulk AlN single crystal growth, bulk silicon carbide (SiC) single crystal growth, chemical vapor deposition of epitaxial SiC films, and metal-organic vapor phase epitaxy of group-III nitrides will lead to further improvements in crystal quality and reduced processing costs.
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International Nuclear Information System (INIS)
Nakamura, Daisuke; Suzumura, Akitoshi; Shigetoh, Keisuke
2015-01-01
Highly reliable low-cost protective coatings have been sought after for use in crucibles and susceptors for bulk and epitaxial film growth processes involving wide bandgap materials. Here, we propose a production technique for ultra-thick (50–200 μmt) tantalum carbide (TaC) protective coatings on graphite substrates, which consists of TaC slurry application and subsequent sintering processes, i.e., a wet ceramic process. Structural analysis of the sintered TaC layers indicated that they have a dense granular structure containing coarse grain with sizes of 10–50 μm. Furthermore, no cracks or pinholes penetrated through the layers, i.e., the TaC layers are highly reliable protective coatings. The analysis also indicated that no plastic deformation occurred during the production process, and the non-textured crystalline orientation of the TaC layers is the origin of their high reliability and durability. The TaC-coated graphite crucibles were tested in an aluminum nitride (AlN) sublimation growth process, which involves extremely corrosive conditions, and demonstrated their practical reliability and durability in the AlN growth process as a TaC-coated graphite. The application of the TaC-coated graphite materials to crucibles and susceptors for use in bulk AlN single crystal growth, bulk silicon carbide (SiC) single crystal growth, chemical vapor deposition of epitaxial SiC films, and metal-organic vapor phase epitaxy of group-III nitrides will lead to further improvements in crystal quality and reduced processing costs
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Saidaminov, Makhsud I.
2015-07-06
Single crystals of methylammonium lead trihalide perovskites (MAPbX3; MA=CH3NH3+, X=Br− or I−) have shown remarkably low trap density and charge transport properties; however, growth of such high-quality semiconductors is a time-consuming process. Here we present a rapid crystal growth process to obtain MAPbX3 single crystals, an order of magnitude faster than previous reports. The process is based on our observation of the substantial decrease of MAPbX3 solubility, in certain solvents, at elevated temperatures. The crystals can be both size- and shape-controlled by manipulating the different crystallization parameters. Despite the rapidity of the method, the grown crystals exhibit transport properties and trap densities comparable to the highest quality MAPbX3 reported to date. The phenomenon of inverse or retrograde solubility and its correlated inverse temperature crystallization strategy present a major step forward for advancing the field on perovskite crystallization.
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Attenuation of thermal neutrons by an imperfect single crystal
Energy Technology Data Exchange (ETDEWEB)
Naguib, K.; Adib, M. [National Research Centre, Cairo (Egypt). Reactor and Neutron Physics Dept.
1996-06-14
A semi-empirical formula is given which allows one to calculate the total thermal cross section of an imperfect single crystal as a function of crystal constants, temperature and neutron energy E, in the energy range between 3 meV and 10 eV. The formula also includes the contribution of the parasitic Bragg scattering to the total cross section that takes into account the crystal mosaic spread value and its orientation with respect to the neutron beam direction. A computer program (ISCANF) was developed to calculate the total attenuation of neutrons using the proposed formula. The ISCANF program was applied to investigate the neutron attenuation through a copper single crystal. The calculated values of the neutron transmission through the imperfect copper single crystal were fitted to the measured ones in the energy range 3-40 meV at different crystal orientations. The result of fitting shows that use of the computer program ISCANF allows one to predict the behaviour of the total cross section of an imperfect copper single crystal for the whole energy range. (author).
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Attenuation of thermal neutrons by an imperfect single crystal
Naguib, K.; Adib, M.
1996-06-01
A semi-empirical formula is given which allows one to calculate the total thermal cross section of an imperfect single crystal as a function of crystal constants, temperature and neutron energy E, in the energy range between 3 meV and 10 eV. The formula also includes the contribution of the parasitic Bragg scattering to the total cross section that takes into account the crystal mosaic spread value and its orientation with respect to the neutron beam direction. A computer program (ISCANF) was developed to calculate the total attenuation of neutrons using the proposed formula. The ISCANF program was applied to investigate the neutron attenuation through a copper single crystal. The calculated values of the neutron transmission through the imperfect copper single crystal were fitted to the measured ones in the energy range 3 - 40 meV at different crystal orientations. The result of fitting shows that use of the computer program ISCANF allows one to predict the behaviour of the total cross section of an imperfect copper single crystal for the whole energy range.
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How far could energy transport within a single crystal
Zhang, Yifan; Che, Yanke; Zhao, Jincai; Steve, Granick
Efficient transport of excitation energy over long distance is a vital process in light-harvesting systems and molecular electronics. The energy transfer distance is largely restricted by the probability decay of the exciton when hopping within a single crystal. Here, we fabricated an organic single crystal within which the energy could transfer more than 100 μm, a distance only limited by its crystal size. Our system could be regarded as a ``Sprint relay game'' performing on different surface of tracks. Photoinduced ``athletes'' (excitons) triggered intermolecular ``domino'' reaction to propagate energy for a long distance. In addition, athletes with the same ability runs much farther on smooth ideal track (single crystal assembled from merely van der Waals interaction) than bumpy mud track (crystal assembled from combination of pi-stacking, hydrogen bond and van der Waals interactions). Our finding presents new physics on enhancing energy transfer length within a single crystal. Current Affiliation: Institute for Basic Science, South Korea.
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Ordering effects on structure and specific heat of nonstoichiometric titanium carbide
International Nuclear Information System (INIS)
Lipatnikov, V.N.; Gusev, A.I.
1999-01-01
The experimental results on the change in the crystal structure and specific heat of the nonstoichiometric titanium carbide TiC y (0.5 2 C phases with cubic and trigonal symmetry and the rhombic ordered Ti 3 C 2 phase are formed in the titanium carbide at the temperature below 1000 K by the phase transitions mechanism. The temperatures and heats of the order-disorder phase transitions are determined [ru
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Studies on the structure of zirconium carbide powders subjected to vibration grinding
International Nuclear Information System (INIS)
Kravchik, A.E.; Neshpor, V.S.
1976-01-01
The present work is a study of zirconium carbide powders subjected to vibratory milling in various media. The powders were comminuted in air (dry milling), benzene, trichloroethylene, and distilled water. The milling time was 10-160 h. The chemical compositions, specific surfaces, and crystal lattice parameters of the powder in the initial condition and after milling for 100 h in the various media are given. Vibratory milling of zirconium carbide powder can be successfully performed in benzene. Comminution in benzene enables a large specific surface to be attained, with practically no chemical reaction between the medium and the milling products. In milling in trichloroethylene the latter decomposes, with the formation of hydrochloric acid which reacts with the milling products. In a study of the fine structure parameters of zirconium carbide in the , , and directions the smallest crystal lattice strains and block sizes were observed in the direction. This may be taken as evidence that under such disintegration conditions the (110) planes constitute cleavage planes. An evaluation of internal and surface energies established that the strained crystal lattice energy reaches values which must be allowed for in any subsequent uses of the powder
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Role of crystal orientation on chemical mechanical polishing of single crystal copper
Energy Technology Data Exchange (ETDEWEB)
Zhu, Aibin, E-mail: abzhu@mail.xjtu.edu.cn; He, Dayong; Luo, Wencheng; Liu, Yangyang
2016-11-15
Highlights: • The role of crystal orientation in cooper CMP by quasi-continuum was studied. • The atom displacement diagrams were obtained and analyzed. • The stress distribution diagrams and load-displacement curves were analyzed. • This research is helpful to revealing the material removal mechanism of CMP. - Abstract: The material removal mechanism of single crystal copper in chemical mechanical polishing (CMP) has not been intensively investigated. And the role of crystal orientation in CMP of single crystal cooper is not quite clear yet. Quasi-continuum method was adopted in this paper to simulate the process of nano-particles grinding on single crystal copper in CMP process. Three different crystal orientations, i.e. x[100]y[001], x[001]y[110] and x[–211]y[111], were chosen for analysis. The atom displacement diagrams, stress distribution diagrams and load-displacement curves were obtained. After analyzing the deformation mechanism, residual stress of the work piece material and cutting force, results showed that, the crystal orientation of work piece has great influence on the deformation characteristics and surface quality of work piece during polishing. In the A(001)[100] orientation, the residual stress distribution after polishing is deeper, and the stress is larger than that in the B(110)[001] and C(111)[–211] orientations. And the average tangential cutting force in the A(001)[100] orientation is much larger than those in the other two crystal orientation. This research is helpful to revealing the material removal mechanism of CMP process.
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Organic field-effect transistors using single crystals
Directory of Open Access Journals (Sweden)
Tatsuo Hasegawa and Jun Takeya
2009-01-01
Full Text Available Organic field-effect transistors using small-molecule organic single crystals are developed to investigate fundamental aspects of organic thin-film transistors that have been widely studied for possible future markets for 'plastic electronics'. In reviewing the physics and chemistry of single-crystal organic field-effect transistors (SC-OFETs, the nature of intrinsic charge dynamics is elucidated for the carriers induced at the single crystal surfaces of molecular semiconductors. Materials for SC-OFETs are first reviewed with descriptions of the fabrication methods and the field-effect characteristics. In particular, a benchmark carrier mobility of 20–40 cm2 Vs−1, achieved with thin platelets of rubrene single crystals, demonstrates the significance of the SC-OFETs and clarifies material limitations for organic devices. In the latter part of this review, we discuss the physics of microscopic charge transport by using SC-OFETs at metal/semiconductor contacts and along semiconductor/insulator interfaces. Most importantly, Hall effect and electron spin resonance (ESR measurements reveal that interface charge transport in molecular semiconductors is properly described in terms of band transport and localization by charge traps.
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Single-Event Effect Testing of the Cree C4D40120D Commercial 1200V Silicon Carbide Schottky Diode
Lauenstein, J.-M.; Casey, M. C.; Wilcox, E. P.; Kim, Hak; Topper, A. D.
2014-01-01
This study was undertaken to determine the single event effect (SEE) susceptibility of the commercial silicon carbide 1200V Schottky diode manufactured by Cree, Inc. Heavy-ion testing was conducted at the Texas A&M University Cyclotron Single Event Effects Test Facility (TAMU). Its purpose was to evaluate this device as a candidate for use in the Solar-Electric Propulsion flight project.
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Crystal ball single event display
International Nuclear Information System (INIS)
Grosnick, D.; Gibson, A.; Allgower, C.; Alyea, J.; Argonne National Lab., IL
1997-01-01
The Single Event Display (SED) is a routine that is designed to provide information graphically about a triggered event within the Crystal Ball. The SED is written entirely in FORTRAN and uses the CERN-based HICZ graphing package. The primary display shows the amount of energy deposited in each of the NaI crystals on a Mercator-like projection of the crystals. Ten different shades and colors correspond to varying amounts of energy deposited within a crystal. Information about energy clusters is displayed on the crystal map by outlining in red the thirteen (or twelve) crystals contained within a cluster and assigning each cluster a number. Additional information about energy clusters is provided in a series of boxes containing useful data about the energy distribution among the crystals within the cluster. Other information shown on the event display include the event trigger type and data about π o 's and η's formed from pairs of clusters as found by the analyzer. A description of the major features is given, along with some information on how to install the SED into the analyzer
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International Nuclear Information System (INIS)
Manikandan, M.; Santhosh, M.; Rajeswarapalanichamy, R.
2016-01-01
Ab initio calculations are performed to investigate the structural stability, electronic structure and mechanical properties of actinide carbides AnC (An=U, Np) for three different crystal structures, namely NaCl, CsCl and ZnS. Among the considered structures, NaCl structure is found to be the most stable structure for these carbides at normal pressure. A pressure induced structural phase transition from NaCl to ZnS is observed. The electronic structure reveals that these carbides are metals. The calculated elastic constants indicate that these carbides are mechanically stable at normal pressure.
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On change of vanadium carbide state during 20Kh3MVF steel heat treatment
International Nuclear Information System (INIS)
Gitgarts, M.I.; Maksimenko, V.N.
1975-01-01
The Xray diffraction study of vanadium carbide MC has been made in the steel-20KH3MVF quenched from 970 and 1040 deg and tempered at 660 deg for 210 hrs. It has been found that the constant of the MC crystal lattice regularly varies with the temperature of isothermal hold-up. In the steel tempered after quenching two vanadium carbides of different content could co-exist simultaneously: carbide formed in the quenching process and carbide formed during tempering. The discovered effect of the temperature dependence of the MC content is, evidently, inherent also to other steels containing vanadium
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Tensile properties of electron-beam-welded single crystals of molybdenum
International Nuclear Information System (INIS)
Hiraoka, Yutaka; Okada, Masatoshi; Irie, Hirosada; Fujii, Tadayuki.
1987-01-01
The purpose of this study is to investigate the macro- and microstructures and the tensile properties of electron-beam-welded single crystals of molybdenum. The single-crystal sheets were prepared by means of secondary recrystallization. The welding was carried out by a melt-run technique. The weld metal had the same crystallographic orientation as the base metal, and no grain boundary was observed. However, many large weld pores were formed mostly along the weld bond. The strength and ductility of the welded joints of single crystals were almost the same as those of the base metal (''annealed'' single crystals). It is concluded that the joint efficiency of molybdenum single crystals at room temperature or above was excellent and nearly 100 %. (author)
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Khoshaim, Ahmed Bakr
The demand for Silicon Carbide ceramics (SiC) has increased significantly in the last decade due to its reliable physical and chemical properties. The silicon carbide is widely used for aerospace segments in addition to many uses in the industry. Sometimes, a single side grinding is preferable than conventional grinding, for it has the ability to produce flat ceramics. However, the manufacturing cost is still high because of the high tool wear and long machining time. Part of the solution is to use electrolytic in process dressing (ELID) to reduce the processing time. The study on ELID single side grinding of ceramics has never been attempted before. The study involves four variables with three levels each. One of the variables, which is the eccentricity, is being investigated for the first time on ceramics. A full factorial design, for both the surface roughness and material removal rate, guides to calculate mathematical models that can predict future results. Three grinding wheel mesh sizes are used. An investigation of the influence of different grain size on the results can then be evaluated. The kinematics of the process was studied based on eccentricity in order to optimize the pattern of the diamond grains. The experiment is performed with the assist of the proposed specialized ELID fluid, TRIM C270E.
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Electroerosion impulse effect on W single crystal structure
International Nuclear Information System (INIS)
Aleshina, S.A.; Khvostikova, V.D.; Zolotykh, B.N.; Marchuk, A.I.
1977-01-01
The mechanism has been studied of brittle failure of single crystal tungsten on planes of crystallographic orientations [100], [110]; [111] in the process of electro-erosion machining by pulses of energies ranging from 1200 to 5000 μJ and of duration of 1 μs. It is shown that the electro-erosion machining of single crystal tungsten is characterized by the formation of a defect layer with a grid of microcracks which lie at a depth of approximately 80 μm. The appearance and the distribution of cracks on the surface of single crystals depends on the crystallogrpahic orientation
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Nanomechanical resonant structures in single-crystal diamond
Burek, Michael J.; Ramos, Daniel; Patel, Parth; Frank, Ian W.; Lončar, Marko
2013-01-01
With its host of outstanding material properties, single-crystal diamond is an attractive material for nanomechanical systems. Here, the mechanical resonance characteristics of freestanding, single-crystal diamond nanobeams fabricated by an angled-etching methodology are reported. Resonance frequencies displayed evidence of significant compressive stress in doubly clamped diamond nanobeams, while cantilever resonance modes followed the expected inverse-length-squared trend. Q-factors on the o...
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Crystal growth, spectral and laser properties of Nd:LSAT single crystal
Hu, P. C.; Yin, J. G.; Zhao, C. C.; Gong, J.; He, X. M.; Zhang, L. H.; Liang, X. Y.; Hang, Y.
2011-10-01
Nd:(La, Sr)(Al, Ta)O3 (Nd:LSAT) crystal was grown by the Czochralski method. The absorption and fluorescence spectra of Nd:LSAT crystal at room temperature were investigated. With a fiber-coupled diode laser as pump source, the continuous-wave (CW) laser action of Nd:LSAT crystal was demonstrated. The result of diode-pumped laser operation of Nd:LSAT crystal single crystal is reported for what is to our knowledge the first time. The maximum output power at 1064 nm was obtained to be 165 mW under the incident pump power of 3 W, with the slope efficiency 10.9%.
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International Nuclear Information System (INIS)
Sangeetha, K.; Babu, R. Ramesh; Bhagavannarayana, G.; Ramamurthi, K.
2011-01-01
Highlights: → L-Arginine monohydrochloride monohydrate (LAHCl) single crystal was grown successfully by unidirectional solution growth method for the first time. → High crystalline perfection was observed for UDS grown crystal compared to CS grown crystal. → The optical transparency and mechanical stability are high for UDS grown LAHCl single crystal. → Optical birefringence measurement on this material. → The piezoelectric resonance frequencies observation - first time observation on this material. - Abstract: L-Arginine monohydrochloride monohydrate (LAHCl) single crystals were grown successfully by conventional and unidirectional solution growth methods. The crystalline perfection of grown crystals was analyzed by high-resolution X-ray diffraction. The linear optical transmittance, mechanical stability of conventional and unidirectional grown LAHCl single crystals were analyzed and compared along (0 0 1) plane. The refractive index and birefringence of LAHCl single crystals were also measured using He-Ne laser source. From the dielectric studies, piezoelectric resonance frequencies were observed in kHz frequency range for both conventional and unidirectional grown LAHCl single crystals along (0 0 1) plane.
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Mesoporous Zeolite Single Crystals for Catalytic Hydrocarbon Conversion
DEFF Research Database (Denmark)
Schmidt, I.; Christensen, Claus H.; Kustova, Marina
2005-01-01
Recently, mesoporous zeolite single crystals were discovered. They constitute a novel family of materials that features a combined micropore and mesopore architecture within each individual crystal. Here, we briefly summarize recent catalytic results from cracking and isomerization of alkalies......, alkylation of aromatics and present new results on isomerization of aromatics. Specifically, the shape-selective isomerization of meta-xylenc into para-xylene and ortho-xylene is studied. In all these reactions, rnesoporous zeolite single crystals prove to be unique catalysts since they provide easy...... transport to and from active sites and at the same time maintain the shape-selectivity required. Thus, all these results support the idea that the beneficial effect of the mesopores system in the mesoporous zeolite single crystals call be solely attributed to enhanced mass transport....
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Resistivity distribution of silicon single crystals using codoping
Wang, Jong Hoe
2005-07-01
Numerous studies including continuous Czochralski method and double crucible technique have been reported on the control of macroscopic axial resistivity distribution in bulk crystal growth. The simple codoping method for improving the productivity of silicon single-crystal growth by controlling axial specific resistivity distribution was proposed by Wang [Jpn. J. Appl. Phys. 43 (2004) 4079]. Wang [J. Crystal Growth 275 (2005) e73] demonstrated using numerical analysis and by experimental results that the axial specific resistivity distribution can be modified in melt growth of silicon crystals and relatively uniform profile is possible by B-P codoping method. In this work, the basic characteristic of 8 in silicon single crystal grown using codoping method is studied and whether proposed method has advantage for the silicon crystal growth is discussed.
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Solar cell structure incorporating a novel single crystal silicon material
Pankove, Jacques I.; Wu, Chung P.
1983-01-01
A novel hydrogen rich single crystal silicon material having a band gap energy greater than 1.1 eV can be fabricated by forming an amorphous region of graded crystallinity in a body of single crystalline silicon and thereafter contacting the region with atomic hydrogen followed by pulsed laser annealing at a sufficient power and for a sufficient duration to recrystallize the region into single crystal silicon without out-gassing the hydrogen. The new material can be used to fabricate semiconductor devices such as single crystal silicon solar cells with surface window regions having a greater band gap energy than that of single crystal silicon without hydrogen.
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Volz, T.; Schwaiger, R.; Wang, J.; Weygand, S. M.
2018-05-01
Tungsten is a promising material for plasma facing components in future nuclear fusion reactors. In the present work, we numerically investigate the deformation behavior of unirradiated tungsten (a body-centered cubic (bcc) single crystal) underneath nanoindents. A finite element (FE) model is presented to simulate wedge indentation. Crystal plasticity finite element (CPFE) simulations were performed for face-centered and body-centered single crystals accounting for the slip system family {110} in the bcc crystal system and the {111} slip family in the fcc system. The 90° wedge indenter was aligned parallel to the [1 ¯01 ]-direction and indented the crystal in the [0 1 ¯0 ]-direction up to a maximum indentation depth of 2 µm. In both, the fcc and bcc single crystals, the activity of slip systems was investigated and compared. Good agreement with the results from former investigations on fcc single crystals was observed. Furthermore, the in-plane lattice rotation in the material underneath an indent was determined and compared for the fcc and bcc single crystals.
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Reciprocating grinders can grind single maize kernels by shaking the kernel in a vial with a ball bearing. This process results in a grind quality that is not satisfactory for many experiments. Tungesten carbide ball bearings are nearly twice as dense as steel, so we compared their grinding performa...
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High-quality single crystals for neutron experiments
Indian Academy of Sciences (India)
studies and our collaborative research projects with other UK and international groups will be discussed. Keywords. Crystal growth; floating zone method; neutron scattering. ... of single crystals of new materials is a highly competitive business.
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Self-templated synthesis of single-crystal and single-domain ferroelectric nanoplates
Chao, Chunying
2012-08-15
Free-standing single-crystal PbTiO 3 nanoplates (see picture) were synthesized by a facile hydrothermal method. A "self-templated" crystal growth is presumed to lead to the formation of the PbTiO 3 nanoplates, which have ferroelectric single-domain structures, whose polarization areas can be manipulated by writing and reading. The nanoplates are also effective catalysts for the oxidation of carbon monoxide. © 2012 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.
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Gallium arsenide single crystal solar cell structure and method of making
Stirn, Richard J. (Inventor)
1983-01-01
A production method and structure for a thin-film GaAs crystal for a solar cell on a single-crystal silicon substrate (10) comprising the steps of growing a single-crystal interlayer (12) of material having a closer match in lattice and thermal expansion with single-crystal GaAs than the single-crystal silicon of the substrate, and epitaxially growing a single-crystal film (14) on the interlayer. The material of the interlayer may be germanium or graded germanium-silicon alloy, with low germanium content at the silicon substrate interface, and high germanium content at the upper surface. The surface of the interface layer (12) is annealed for recrystallization by a pulsed beam of energy (laser or electron) prior to growing the interlayer. The solar cell structure may be grown as a single-crystal n.sup.+ /p shallow homojunction film or as a p/n or n/p junction film. A Ga(Al)AS heteroface film may be grown over the GaAs film.
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International Nuclear Information System (INIS)
Lukishova, S.G.; Knox, R.P.; Freivald, P.; McNamara, A.; Boyd, R.W.; Stroud, Jr. C.R.; Schmid, A.W.; Marshall, K.L.
2006-01-01
This paper describes a new application for liquid crystals: quantum information technology. A deterministically polarized single-photon source that efficiently produces photons exhibiting antibunching is a pivotal hardware element in absolutely secure quantum communication. Planar-aligned nematic liquid crystal hosts deterministically align the single dye molecules which produce deterministically polarized single (antibunched) photons. In addition, 1-D photonic bandgap cholesteric liquid crystals will increase single-photon source efficiency. The experiments and challenges in the observation of deterministically polarized fluorescence from single dye molecules in planar-aligned glassy nematic-liquid-crystal oligomer as well as photon antibunching in glassy cholesteric oligomer are described for the first time
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Crystal plasticity study of single crystal tungsten by indentation tests
International Nuclear Information System (INIS)
Yao, Weizhi
2012-01-01
Owing to its favorable material properties, tungsten (W) has been studied as a plasma-facing material in fusion reactors. Experiments on W heating in plasma sources and electron beam facilities have shown an intense micro-crack formation at the heated surface and sub-surface. The cracks go deep inside the irradiated sample, and often large distorted areas caused by local plastic deformation are present around the cracks. To interpret the crack-induced microscopic damage evolution process in W, one needs firstly to understand its plasticity on a single grain level, which is referred to as crystal plasticity. In this thesis, the crystal plasticity of single crystal tungsten (SCW) has been studied by spherical and Berkovich indentation tests and the finite element method with a crystal plasticity model. Appropriate values of the material parameters included in the crystal plasticity model are determined by fitting measured load-displacement curves and pile-up profiles with simulated counterparts for spherical indentation. The numerical simulations reveal excellent agreement with experiment. While the load-displacement curves and the deduced indentation hardness exhibit little sensitivity to the indented plane at small indentation depths, the orientation of slip directions within the crystals governs the development of deformation hillocks at the surface. It is found that several factors like friction, indentation depth, active slip systems, misoriented crystal orientation, misoriented sample surface and azimuthal orientation of the indenter can affect the indentation behavior of SCW. The Berkovich indentation test was also used to study the crystal plasticity of SCW after deuterium irradiation. The critical load (pop-in load) for triggering plastic deformation under the indenter is found to depend on the crystallographic orientation. The pop-in loads decrease dramatically after deuterium plasma irradiation for all three investigated crystallographic planes.
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Photoluminescence properties of boron doped InSe single crystals
International Nuclear Information System (INIS)
Ertap, H.; Bacıoğlu, A.; Karabulut, M.
2015-01-01
Undoped and boron doped InSe single crystals were grown by Bridgman–Stockbarger technique. The PL properties of undoped, 0.1% and 0.5% boron doped InSe single crystals have been investigated at different temperatures. PL measurements revealed four emission bands labeled as A, B, C and D in all the single crystals studied. These emission bands were associated with the radiative recombination of direct free excitons (n=1), impurity-band transitions, donor–acceptor recombinations and structural defect related band (impurity atoms, defects, defect complexes, impurity-vacancy complex etc.), respectively. The direct free exciton (A) bands of undoped, 0.1% and 0.5% boron doped InSe single crystals were observed at 1.337 eV, 1.335 eV and 1.330 eV in the PL spectra measured at 12 K, respectively. Energy positions and PL intensities of the emission bands varied with boron addition. The FWHM of direct free exciton band increases while the FWHM of the D emission band decreases with boron doping. Band gap energies of undoped and boron doped InSe single crystals were calculated from the PL measurements. It was found that the band gap energies of InSe single crystals decreased with increasing boron content. - Highlights: • PL spectra of InSe crystals have been studied as a function of temperature. • Four emission bands were observed in the PL spectra at low temperatures. • PL intensity and position of free exciton band vary with doping and temperature. • Temperature dependences of the bands observed in the PL spectra were analyzed
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Capillarity creates single-crystal calcite nanowires from amorphous calcium carbonate.
Kim, Yi-Yeoun; Hetherington, Nicola B J; Noel, Elizabeth H; Kröger, Roland; Charnock, John M; Christenson, Hugo K; Meldrum, Fiona C
2011-12-23
Single-crystal calcite nanowires are formed by crystallization of morphologically equivalent amorphous calcium carbonate (ACC) particles within the pores of track etch membranes. The polyaspartic acid stabilized ACC is drawn into the membrane pores by capillary action, and the single-crystal nature of the nanowires is attributed to the limited contact of the intramembrane ACC particle with the bulk solution. The reaction environment then supports transformation to a single-crystal product. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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Single-crystal study of the charge density wave metal LuNiC2
Steiner, S.; Michor, H.; Sologub, O.; Hinterleitner, B.; Höfenstock, F.; Waas, M.; Bauer, E.; Stöger, B.; Babizhetskyy, V.; Levytskyy, V.; Kotur, B.
2018-05-01
We report on single-crystal growth, single-crystal x-ray diffraction, physical properties, and density functional theory (DFT) electronic structure as well as Fermi surface calculations for two ternary carbides, LuCoC2 and LuNiC2. Electrical resistivity measurements reveal for LuNiC2 a charge density wave (CDW) transition at TCDW≃450 K and, for T >TCDW , a significant anisotropy of the electrical resistivity, which is lowest along the orthorhombic a axis. The analysis of x-ray superstructure reflections suggest a commensurate CDW state with a Peierls-type distortion of the Ni atom periodicity along the orthorhombic a axis. DFT calculations based on the CDW modulated monoclinic structure model of LuNiC2 as compared to results of the orthorhombic parent type reveal the formation of a partial CDW gap at the Fermi level which reduces the electronic density of states from N (EF)=1.03 states/eV f.u. without CDW to N (EF)=0.46 states/eV f.u. in the CDW state. The corresponding bare DFT Sommerfeld value of the latter, γDFTCDW=0.90 mJ/mol K2, reaches reasonable agreement with the experimental value γ =0.83 (5 ) mJ/mol K2 of LuNiC2. LuCoC2 displays a simple metallic behavior with neither CDW ordering nor superconductivity above 0.4 K. Its experimental Sommerfeld coefficient, γ =5.9 (1) mJ/mol K2, is in realistic correspondence with the calculated, bare Sommerfeld coefficient, γDFT=3.82 mJ/mol K2, of orthorhombic LuCoC2.
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Carbide-reinforced metal matrix composite by direct metal deposition
Novichenko, D.; Thivillon, L.; Bertrand, Ph.; Smurov, I.
Direct metal deposition (DMD) is an automated 3D laser cladding technology with co-axial powder injection for industrial applications. The actual objective is to demonstrate the possibility to produce metal matrix composite objects in a single-step process. Powders of Fe-based alloy (16NCD13) and titanium carbide (TiC) are premixed before cladding. Volume content of the carbide-reinforced phase is varied. Relationships between the main laser cladding parameters and the geometry of the built-up objects (single track, 2D coating) are discussed. On the base of parametric study, a laser cladding process map for the deposition of individual tracks was established. Microstructure and composition of the laser-fabricated metal matrix composite objects are examined. Two different types of structures: (a) with the presence of undissolved and (b) precipitated titanium carbides are observed. Mechanism of formation of diverse precipitated titanium carbides is studied.
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Synthesis and phase transformation mechanism of Nb{sub 2}C carbide phases
Energy Technology Data Exchange (ETDEWEB)
Vishwanadh, B., E-mail: visubathula@gmail.com [Materials Science Division, Bhabha Atomic Research Centre, Mumbai 400 094 (India); Murthy, T.S.R.Ch. [Materials Processing Division, Bhabha Atomic Research Centre, Mumbai 400 094 (India); Arya, A.; Tewari, R.; Dey, G.K. [Materials Science Division, Bhabha Atomic Research Centre, Mumbai 400 094 (India)
2016-06-25
In the present work, Niobium carbide samples were prepared through powder metallurgy route using spark plasma sintering technique. Some of these samples were heat treated at 900 °C up to 7 days. In order to investigate the phase transformation in Nb{sub 2}C carbide, the as-prepared and heat treated samples were characterized by X-ray diffraction, scanning electron microscopy and electron back scattered diffraction (EBSD) and transmission electron microscopy techniques. EBSD could index the same area of the sample in terms of any of the three allotropes of Nb{sub 2}C carbide phases (γ-Nb{sub 2}C, β-Nb{sub 2}C and α-Nb{sub 2}C) with good confidence index. From the EBSD patterns orientation relationships (OR) among γ, β and α-Nb{sub 2}C have been determined. Based on this OR when crystals of the three allotropes were superimposed, it has revealed that the basic Nb metal atom lattice (hcp lattice) in all the Nb{sub 2}C phases is same. The only difference exists in the carbides is the ordering of carbon atoms and vacancies in the octahedral positions of the hcp Nb metal atom lattice. Crystallographic analysis showed that for the transformation of γ-Nb{sub 2}C → β-Nb{sub 2}C → α-Nb{sub 2}C, large movement of Nb atoms is not required; but only by ordering of carbon atoms ensues the phase transformation. Literature shows that in the Nb–C system formation of the α-Nb{sub 2}C is not well established. Therefore, first principle calculations were carried out on these carbides. It revealed that the formation energy for α-Nb{sub 2}C is lower than the β and γ-Nb{sub 2}C carbides which indicate that the formation of α-Nb{sub 2}C is thermodynamically feasible. - Highlights: • Nb{sub 2}C carbide was produced by Spark Plasma Sintering in a single process. • Phase transformation mechanism of different Nb{sub 2}C carbide phases is studied. • In all the three Nb{sub 2}C carbides (γ, β, α), the base Nb lattice remains same. • Among γ, β and α-Nb{sub 2}C
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Crystallization and structure of chromium cast iron with addition of Mo and Ni
International Nuclear Information System (INIS)
Pietrowski, S.
1998-01-01
The aim of the presented paper is to show the results of examination of the crystallization process using the method of thermal-derivative analysis (ATD) and the structure examination of chromium cast iron, chromium molybdenum c. i. and chromium molybdenum nickel c.i. It was found that molybdenum in amount over 2 wt % causes the crystallization of eutectic carbides M 23 C 6 and M 6 C. The M 23 C 6 carbide crystallizes upon the crystallization of eutectic carbides M 3 C and M 7 C 3 . It is shown that ATD method facilitates both interpretation and control of the crystallization as well as formation of the cast iron structure at the solid state. (author)
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LASER PROCESSING ON SINGLE CRYSTALS BY UV PULSE LASER
龍見, 雅美; 佐々木, 徹; 高山, 恭宜
2009-01-01
Laser processing by using UV pulsed laser was carried out on single crystal such as sapphire and diamond in order to understand the fundamental laser processing on single crystal. The absorption edges of diamond and sapphire are longer and shorter than the wave length of UV laser, respectively. The processed regions by laser with near threshold power of processing show quite different state in each crystal.
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Crystal growth and characterization of new semiorganic nonlinear optical single crystals
Energy Technology Data Exchange (ETDEWEB)
Kulshrestha, Shobha, E-mail: shobha011986@gmail.com; Shrivastava, A. K., E-mail: ashwaniaks@rediffmail.com [School of Studies in Physics, Jiwaji University Gwalior (M.P.) – 474 011 (India)
2016-05-06
An organic material of a L-histidine monohydrochloride single crystal was grown in a distilled water solution using the slow evaporation method at 40–45°C. The grown crystal was transparent and colourless, with a size of about 20 × 9 × 5 mm{sup 3}, obtained within a period of 21 days. The solubility of grown crystals have found out at various temperatures. The UV-visible transmittance studies show that the grown crystals have wide optical transparency in the entire visible region It is observed that the crystal has transparency window from 255nm to 700nm and its energy gap (Eg) found to be is 3.1eV. The grown crystal was subjected to powder X-ray diffraction analysis, confirming that the orthorhombic crystalline nature of the crystal. To identify the surface morphology, the as grown crystal was subjected to FE-SEM technique. The chemical composition of the grown crystal was estimated by Energy dispersive X-ray analysis. The optical behaviour of the grown crystal was analyzed by PL study.
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Dielectric and baric characteristics of TlS single crystal
Energy Technology Data Exchange (ETDEWEB)
Mustafaeva, S.N., E-mail: solmust@gmail.com [Institute of Physics, ANAS, G. Javid prosp. 33, Az 1143 Baku (Azerbaijan); Asadov, M.M. [Institute of Chemical Problems, ANAS, G. Javid prosp. 29, Az 1143 Baku (Azerbaijan); Ismailov, A.A. [Institute of Physics, ANAS, G. Javid prosp. 33, Az 1143 Baku (Azerbaijan)
2014-11-15
The investigation of the frequency dependences of the dielectric coefficients and ac-conductivity of the TlS single crystals made it possible to elucidate the nature of dielectric loss and the charge transfer mechanism. Moreover, we evaluated the density and energy spread of localized states near the Fermi level, the average hopping time and the average hopping length. It was shown that the dc-conductivity of the TlS single crystals can be controlled by varying the hydrostatic pressure. This has opened up possibilities for using TlS single crystals as active elements of pressure detectors.
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Neutron transmission of single-crystal sapphire filters
International Nuclear Information System (INIS)
Adib, M.; Kilany, M.; Habib, N.; Fathallah, M.
2005-01-01
An additive formula is given that permits the calculation of the nuclear capture, thermal diffuse and Bragg scattering cross-sections as a function of sapphire temperature and crystal parameters. We have developed a computer program that allows calculations of the thermal neutron transmission for the sapphire rhombohedral structure and its equivalent trigonal structure. The calculated total cross-section values and effective attenuation coefficient for single-crystalline sapphire at different temperatures are compared with measured values. Overall agreement is indicated between the formula fits and experimental data. We discuss the use of sapphire single crystal as a thermal neutron filter in terms of the optimum crystal thickness, mosaic spread, temperature, cutting plane and tuning for efficient transmission of thermal-reactor neutrons. (author)
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Friction stir welding of single crystal aluminium
DEFF Research Database (Denmark)
Fonda, Richard Warren; Wert, John A.; Reynolds, A.P.
2007-01-01
Friction stir welds were prepared in different orientations in an aluminium single crystal. The welds were quenched to preserve the microstructure surrounding the tool and then electron backscattered diffraction was used to reveal the generation of grain boundaries and the evolution...... of crystallographic texture around the tool in each weld. The extent of both dynamic recrystallisation and conventional recrystallisation varied considerably as a function of weld orientation. As the base plate begins to interact with the deformation field surrounding the tool, regions of the single crystal rotate...
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Czochralski method of growing single crystals. State-of-art
International Nuclear Information System (INIS)
Bukowski, A.; Zabierowski, P.
1999-01-01
Modern Czochralski method of single crystal growing has been described. The example of Czochralski process is given. The advantages that caused the rapid progress of the method have been presented. The method limitations that motivated the further research and new solutions are also presented. As the example two different ways of the technique development has been described: silicon single crystals growth in the magnetic field; continuous liquid feed of silicon crystals growth. (author)
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Mixed Uranium/Refractory Metal Carbide Fuels for High Performance Nuclear Reactors
International Nuclear Information System (INIS)
Knight, Travis; Anghaie, Samim
2002-01-01
Single phase, solid-solution mixed uranium/refractory metal carbides have been proposed as an advanced nuclear fuel for advanced, high-performance reactors. Earlier studies of mixed carbides focused on uranium and either thorium or plutonium as a fuel for fast breeder reactors enabling shorter doubling owing to the greater fissile atom density. However, the mixed uranium/refractory carbides such as (U, Zr, Nb)C have a lower uranium densities but hold significant promise because of their ultra-high melting points (typically greater than 3700 K), improved material compatibility, and high thermal conductivity approaching that of the metal. Various compositions of (U, Zr, Nb)C were processed with 5% and 10% metal mole fraction of uranium. Stoichiometric samples were processed from the constituent carbide powders, while hypo-stoichiometric samples with carbon-to-metal (C/M) ratios of 0.92 were processed from uranium hydride, graphite, and constituent refractory carbide powders. Processing techniques of cold uniaxial pressing, dynamic magnetic compaction, sintering, and hot pressing were investigated to optimize the processing parameters necessary to produce high density (low porosity), single phase, solid-solution mixed carbide nuclear fuels for testing. This investigation was undertaken to evaluate and characterize the performance of these mixed uranium/refractory metal carbides for high performance, ultra-safe nuclear reactor applications. (authors)
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Atomic structure of non-stoichiometric transition metal carbides
International Nuclear Information System (INIS)
Moisy-Maurice, Virginie.
1981-10-01
Different kinds of experimental studies of the atomic arrangement in non-stoichiometric transition metal carbides are proposed: the ordering of carbon vacancies and the atomic static displacements are the main subjects studied. Powder neutron diffraction on TiCsub(1-x) allowed us to determine the order-disorder transition critical temperature -Tsub(c) approximately 770 0 C- in the TiCsub(0.52-0.67) range, and to analyze at 300 K the crystal structure of long-range ordered samples. A neutron diffuse scattering quantitative study at 300 K of short-range order in TiCsub(0.76), TiCsub(0.79) and NbCsub(0.73) single crystals is presented: as in Ti 2 Csub(1+x) and Nb 6 C 5 superstructures, vacancies avoid to be on each side of a metal atom. Besides, the mean-square carbon atom displacements from their sites are small, whereas metal atoms move radially about 0.03 A away from vacancies. These results are in qualitative agreement with EXAFS measurements at titanium-K edge of TiCsub(1-x). An interpretation of ordering in term of short-range interaction pair potentials between vacancies is proposed [fr
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Single crystal and optical ceramic multicomponent garnet scintillators: A comparative study
International Nuclear Information System (INIS)
Wu, Yuntao; Luo, Zhaohua; Jiang, Haochuan; Meng, Fang; Koschan, Merry; Melcher, Charles L.
2015-01-01
Multicomponent garnet materials can be made in optical ceramic as well as single crystal form due to their cubic crystal structure. In this work, high-quality Gd 3 Ga 3 Al 2 O 12 :0.2 at% Ce (GGAG:Ce) single crystal and (Gd,Lu) 3 Ga 3 Al 2 O 12 :1 at% Ce (GLuGAG:Ce) optical ceramics were fabricated by the Czochralski method and a combination of hot isostatic pressing (HIPing) and annealing treatment, respectively. Under optical and X-ray excitation, the GLuGAG:Ce optical ceramic exhibits a broad Ce 3+ transition emission centered at 550 nm, while the emission peak of the GGAG:Ce single crystal is centered at 540 nm. A self-absorption effect in GLuGAG:Ce optical ceramic results in this red-shift of the Ce 3+ emission peak compared to that in the GGAG:Ce single crystal. The light yield under 662 keV γ-ray excitation was 45,000±2500 photons/MeV and 48,200±2410 photons/MeV for the GGAG:Ce single crystal and GLuGAG:Ce optical ceramic, respectively. An energy resolution of 7.1% for 662 keV γ-rays was achieved in the GLuGAG:Ce optical ceramic with a Hamamatsu R6231 PMT, which is superior to the value of 7.6% for a GGAG:Ce single crystal. Scintillation decay time measurements under 137 Cs irradiation show two exponential decay components of 58 ns (47%) and 504 ns (53%) for the GGAG:Ce single crystal, and 84 ns (76%) and 148 ns (24%) for the GLuGAG:Ce optical ceramic. The afterglow level after X-ray cutoff in the GLuGAG:Ce optical ceramic is at least one order of magnitude lower than in the GGAG:Ce single crystal. - Highlights: • GGAG:Ce single crystal and GLuGAG:Ce optical ceramics were fabricated. • The light yield of both ceramic and crystal G(Lu)GAG:Ce reached the level of 45,000 photons/MeV. • GLuGAG:Ce optical ceramic showed a better energy resolution of 7.1% for 662 keV. • GLuGAG:Ce ceramics exhibited lower afterglow level than that of GGAG:Ce single crystals. • The possible optimization strategies for multicomponent aluminate garnets are discussed
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Spherical Nb single crystals containerlessly grown by electrostatic levitation
International Nuclear Information System (INIS)
Sung, Y.S.; Takeya, H.; Hirata, K.; Togano, K.
2003-01-01
Spherical Nb (T m =2750 K) single crystals were grown via containerless electrostatic levitation (ESL). Samples became spherical at melting in levitation and undercooled typically 300-450 K prior to nucleation. As-processed samples were still spherical without any macroscopic shape change by solidification showing a uniform dendritic surface morphology. Crystallographic {111} planes exposed in equilateral triangular shapes on the surface by preferential macroetching and spotty back-reflection Laue patterns confirm the single crystal nature of the ESL-processed Nb samples. No hysteresis in magnetization between zero field and field cooling also implies a clean defect-free condition of the spherical Nb single crystals
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Directory of Open Access Journals (Sweden)
Zhang Changrui
2016-07-01
Full Text Available An entirely aqueous solution-gel route has been developed for the synthesis of zirconium carbide, hafnium carbide and their ternary carbide powders. Zirconium oxychloride (ZrOCl₂.8H₂O, malic acid (MA and ethylene glycol (EG were dissolved in water to form the aqueous zirconium carbide precursor. Afterwards, this aqueous precursor was gelled and transformed into zirconium carbide at a relatively low temperature (1200 °C for achieving an intimate mixing of the intermediate products. Hafnium and the ternary carbide powders were also synthesized via the same aqueous route. All the zirconium, hafnium and ternary carbide powders exhibited a particle size of ∼100 nm.
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Ektarawong, A.; Simak, S. I.; Alling, B.
2018-05-01
We perform first-principles calculations to investigate the phase stability of boron carbide, concentrating on the recently proposed alternative structural models composed not only of the regularly studied B11Cp (CBC) and B12(CBC), but also of B12(CBCB) and B12( B4 ). We find that a combination of the four structural motifs can result in low-energy electron precise configurations of boron carbide. Among several considered configurations within the composition range of B10.5C and B4C , we identify in addition to the regularly studied B11Cp (CBC) at the composition of B4C two low-energy configurations, resulting in a new view of the B-C convex hull. Those are [B12 (CBC)]0.67[B12(B4)] 0.33 and [B12 (CBC)]0.67[ B12 (CBCB)]0.33, corresponding to compositions of B10.5C and B6.67C , respectively. As a consequence, B12(CBC) at the composition of B6.5C , previously suggested in the literature as a stable configuration of boron carbide, is no longer part of the B -C convex hull. By inspecting the electronic density of states as well as the elastic moduli, we find that the alternative models of boron carbide can provide a reasonably good description for electronic and elastic properties of the material in comparison with the experiments, highlighting the importance of considering B12(CBCB) and B12( B4 ), together with the previously proposed B11Cp (CBC) and B12(CBC), as the crucial ingredients for modeling boron carbide with compositions throughout the single-phase region.
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Metal Halide Perovskite Single Crystals: From Growth Process to Application
Directory of Open Access Journals (Sweden)
Shuigen Li
2018-05-01
Full Text Available As a strong competitor in the field of optoelectronic applications, organic-inorganic metal hybrid perovskites have been paid much attention because of their superior characteristics, which include broad absorption from visible to near-infrared region, tunable optical and electronic properties, high charge mobility, long exciton diffusion length and carrier recombination lifetime, etc. It is noted that perovskite single crystals show remarkably low trap-state densities and long carrier diffusion lengths, which are even comparable with the best photovoltaic-quality silicon, and thus are expected to provide better optoelectronic performance. This paper reviews the recent development of crystal growth in single-, mixed-organic-cation and fully inorganic halide perovskite single crystals, in particular the solution approach. Furthermore, the application of metal hybrid perovskite single crystals and future perspectives are also highlighted.
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Anisotropy of Single-Crystal Silicon in Nanometric Cutting.
Wang, Zhiguo; Chen, Jiaxuan; Wang, Guilian; Bai, Qingshun; Liang, Yingchun
2017-12-01
The anisotropy exhibited by single-crystal silicon in nanometric cutting is very significant. In order to profoundly understand the effect of crystal anisotropy on cutting behaviors, a large-scale molecular dynamics model was conducted to simulate the nanometric cutting of single-crystal silicon in the (100)[0-10], (100)[0-1-1], (110)[-110], (110)[00-1], (111)[-101], and (111)[-12-1] crystal directions in this study. The simulation results show the variations of different degrees in chip, subsurface damage, cutting force, and friction coefficient with changes in crystal plane and crystal direction. Shear deformation is the formation mechanism of subsurface damage, and the direction and complexity it forms are the primary causes that result in the anisotropy of subsurface damage. Structurally, chips could be classified into completely amorphous ones and incompletely amorphous ones containing a few crystallites. The formation mechanism of the former is high-pressure phase transformation, while the latter is obtained under the combined action of high-pressure phase transformation and cleavage. Based on an analysis of the material removal mode, it can be found that compared with the other crystal direction on the same crystal plane, the (100)[0-10], (110)[-110], and (111)[-101] directions are more suitable for ductile cutting.
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Creating and Controlling Single Spins in Silicon Carbide
Christle, David
Silicon carbide (SiC) is a well-established commercial semiconductor used in high-power electronics, optoelectronics, and nanomechanical devices, and has recently shown promise for semiconductor-based implementations of quantum information technologies. In particular, a set of divacancy-related point defects have improved coherence properties relative to the prominent nitrogen-vacancy center in diamond, are addressable at near-telecom wavelengths, and reside in a material for which there already exist advanced growth, doping, and microfabrication capabilities. These properties suggest divacancies in SiC have compelling advantages for photonics and micromechanical applications, yet their relatively recent discovery means crucial aspects of their fundamental physics for these applications are not well understood. I will review our progress on manipulating spin defects in SiC, and discuss efforts towards isolating and controlling them at the single defect limit. In particular, our most recent experimental results demonstrate isolation and control of long-lived (T2 = 0 . 9 ms) divacancies in a form of SiC that can be grown epitaxially on silicon. By studying the time-resolved photoluminescence of a single divacancy, we reveal its fundamental orbital structure and characterize in detail the dynamics of its special optical cycle. Finally, we probe individual divacancies using resonant laser techniques and reveal an efficient spin-photon interface with figures of merit comparable to those reported for NV centers in diamond. These results suggest a pathway towards photon-mediated entanglement of SiC defect spins over long distances. This work was supported by NSF, AFOSR, the Argonne CNM, the Knut & Alice Wallenberg Foundation, the Linköping Linnaeus Initiative, the Swedish Government Strategic Research Area, and the Ministry of Education, Science, Sports and Culture of Japan.
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Composition and microstructure of beryllium carbide films prepared by thermal MOCVD
Energy Technology Data Exchange (ETDEWEB)
He, Yu-dan; Luo, Jiang-shan; Li, Jia; Meng, Ling-biao; Luo, Bing-chi; Zhang, Ji-qiang; Zeng, Yong; Wu, Wei-dong, E-mail: wuweidongding@163.com
2016-02-15
Highlights: • Non-columnar-crystal Be{sub 2}C films were firstly prepared by thermal MOCVD. • Beryllium carbide was always the dominant phase in the films. • α-Be and carbon existed in films deposited below and beyond 400 °C, respectively. • Morphology evolved with temperatures and no columnar grains were characterized. • The preferred substrate temperature for depositing high quality Be{sub 2}C films was 400 °C. - Abstract: Beryllium carbide films without columnar-crystal microstructures were prepared on the Si (1 0 0) substrate by thermal metal organic chemical vapor deposition using diethylberyllium as precursor. The influence of the substrate temperature on composition and microstructure of beryllium carbide films was systematically studied. Crystalline beryllium carbide is always the dominant phase according to XRD analysis. Meanwhile, a small amount of α-Be phase exists in films when the substrate temperature is below 400 °C, and hydrocarbon or amorphous carbon exists when the temperature is beyond 400 °C. Surfaces morphology shows transition from domes to cylinders, to humps, and to tetraquetrous crystalline needles with the increase of substrate temperature. No columnar grains are characterized throughout the thickness as revealed from the cross-section views. The average densities of these films are determined to be 2.04–2.17 g/cm{sup 3}. The findings indicate the substrate temperature has great influences on the composition and microstructure of the Be{sub 2}C films grown by thermal MOCVD.
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Neutron transmission measurements of zinc and lead single crystals
International Nuclear Information System (INIS)
Adib, M.; Abdel-Kawy, A.
1988-01-01
Neutron transmission measurements of zinc and lead single crystals have been carried out in a neutron wavelength band from 0.03 to 0.55 nm at different orientations of the crystal with regard to the beam direction. The measurements were performed using both time-of-flight and fixed-angle scattering spectrometers installed in front of the ET-RR-1 reactor horizontal channels. It was found that the position of the observed dips in the neutron transmission measurements corresponded to the reflections from the (h k l) planes of the hexagonal zinc single crystal which was cut along the (0 0 2) plane, while in the case of lead, the single crystal was cut perpendicular to the (3 1 1) plane. The reflectivity from the (0 0 2) plane of zinc was determined using both transmission and reflection methods. The maximum reflectivity was found to be 55% when the zinc crystal was orientated at 45 0 to the beam direction. The wavelength spread of the observed reflectivity curve was found to be in agreement with the calculated one, taking into consideration the spectrometer's resolution and the crystal mosaic spread. (author)
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Single-Crystal Diamond Nanobeam Waveguide Optomechanics
Khanaliloo, Behzad; Jayakumar, Harishankar; Hryciw, Aaron C.; Lake, David P.; Kaviani, Hamidreza; Barclay, Paul E.
2015-10-01
Single-crystal diamond optomechanical devices have the potential to enable fundamental studies and technologies coupling mechanical vibrations to both light and electronic quantum systems. Here, we demonstrate a single-crystal diamond optomechanical system and show that it allows excitation of diamond mechanical resonances into self-oscillations with amplitude >200 nm . The resulting internal stress field is predicted to allow driving of electron spin transitions of diamond nitrogen-vacancy centers. The mechanical resonances have a quality factor >7 ×105 and can be tuned via nonlinear frequency renormalization, while the optomechanical interface has a 150 nm bandwidth and 9.5 fm /√{Hz } sensitivity. In combination, these features make this system a promising platform for interfacing light, nanomechanics, and electron spins.
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Seeded growth of boron arsenide single crystals with high thermal conductivity
Tian, Fei; Song, Bai; Lv, Bing; Sun, Jingying; Huyan, Shuyuan; Wu, Qi; Mao, Jun; Ni, Yizhou; Ding, Zhiwei; Huberman, Samuel; Liu, Te-Huan; Chen, Gang; Chen, Shuo; Chu, Ching-Wu; Ren, Zhifeng
2018-01-01
Materials with high thermal conductivities are crucial to effectively cooling high-power-density electronic and optoelectronic devices. Recently, zinc-blende boron arsenide (BAs) has been predicted to have a very high thermal conductivity of over 2000 W m-1 K-1 at room temperature by first-principles calculations, rendering it a close competitor for diamond which holds the highest thermal conductivity among bulk materials. Experimental demonstration, however, has proved extremely challenging, especially in the preparation of large high quality single crystals. Although BAs crystals have been previously grown by chemical vapor transport (CVT), the growth process relies on spontaneous nucleation and results in small crystals with multiple grains and various defects. Here, we report a controllable CVT synthesis of large single BAs crystals (400-600 μm) by using carefully selected tiny BAs single crystals as seeds. We have obtained BAs single crystals with a thermal conductivity of 351 ± 21 W m-1 K-1 at room temperature, which is almost twice as conductive as previously reported BAs crystals. Further improvement along this direction is very likely.
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Effect of indium and antimony doping in SnS single crystals
Energy Technology Data Exchange (ETDEWEB)
Chaki, Sunil H., E-mail: sunilchaki@yahoo.co.in; Chaudhary, Mahesh D.; Deshpande, M.P.
2015-03-15
Highlights: • Single crystals growth of pure SnS, indium doped SnS and antimony doped SnS by direct vapour transport (DVT) technique. • Doping of In and Sb occurred in SnS single crystals by cation replacement. • The replacement mechanism ascertained by EDAX, XRD and substantiated by Raman spectra analysis. • Dopants concentration affects the optical energy bandgap. • Doping influences electrical transport properties. - Abstract: Single crystals of pure SnS, indium (In) doped SnS and antimony (Sb) doped SnS were grown by direct vapour transport (DVT) technique. Two doping concentrations of 5% and 15% each were employed for both In and Sb dopants. Thus in total five samples were studied viz., pure SnS (S1), 5% In doped SnS (S2), 15% In doped SnS (S3), 5% Sb doped SnS (S4) and 15% Sb doped SnS (S5). The grown single crystal samples were characterized by evaluating their surface microstructure, stoichiometric composition, crystal structure, Raman spectroscopy, optical and electrical transport properties using appropriate techniques. The d.c. electrical resistivity and thermoelectric power variations with temperature showed semiconducting and p-type nature of the as-grown single crystal samples. The room temperature Hall Effect measurements further substantiated the semiconducting and p-type nature of the as-grown single crystal samples. The obtained results are deliberated in detail.
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Groth, Benjamin Peter
Machining is a necessary post-processing step in the manufacturing of many ceramic materials. Parts are machined to meet specific dimensions, with tight tolerances, not attainable from forming alone, as well as to achieve a desired surface finish. However, the machining process is very harsh, often employing the use of high temperatures and pressures to achieve the wanted result. In the case of silicon carbide, a material with extremely high hardness and stiffness, machining is very difficult and requires machining conditions that are highly aggressive. This can leave behind residual stresses in the surface of the material, cause unwanted phase transformations, and produce sub-surface deformation that can lead to failure. This thesis seeks to determine the effect of various machining conditions on the Raman spectra and elastic properties of sintered silicon carbide materials. Sample sets examined included hot-pressed silicon carbide tiles with four different surface finishes, as well as "ideal" single crystal silicon carbide wafers. The surface finishes studied were as follows: an as-pressed finish; a grit blast finish; a harsh rotary ground finish; and a mirror polish. Each finish imparts a different amount, as well as type, of deformation to the sample and are each utilized for a specific application. The sample surfaces were evaluated using a combination of Raman spectroscopy, for phase identification and stress analysis, and nanoindentation, for obtaining elastic properties and imparting uniform controlled deformation to the samples. Raman spectroscopy was performed over each sample surface using 514- and 633-nm wavelength excitation, along with confocal and non-confocal settings to study depth variation. Surfaces stresses were determined using peak shift information extracted from Raman spectra maps, while other spectral variations were used to compare levels of machining damage. Elastic modulus, hardness, and plastic work of indentation maps were generated
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CH3NH3PbCl3 Single Crystals: Inverse Temperature Crystallization and Visible-Blind UV-Photodetector
Maculan, Giacomo
2015-09-02
Single crystals of hybrid perovskites have shown remarkably improved physical properties compared to their polycrystalline film counterparts, underscoring their importance in the further development of advanced semiconductor devices. Here we present a new method of sizeable CH3NH3PbCl3 single crystal growth based on retrograde solubility behavior of hybrid perovskites. We show, for the first time, the energy band structure, charge-carrier recombination and transport properties of single crystal CH3NH3PbCl3. The chloride-based perovskite crystals exhibit trap-state density, charge carriers concentration, mobility and diffusion length comparable with the best quality crystals of methylammonium lead iodide or bromide perovskites reported so far. The high quality of the crystal along with its suitable optical bandgap enabled us to design and build an efficient visible-blind UV-photodetector, demonstrating the potential of this material to be employed in optoelectronic applications.
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Atomic structures and mechanical properties of single-crystal GaN nanotubes
International Nuclear Information System (INIS)
Xu, B.; Lu, A.J.; Pan, B.C.; Yu, Q.X.
2005-01-01
An approach is proposed to theoretically construct a realistic single-crystal GaN nanotube at atomic scale. The generated atomic structures of the single-crystal GaN nanotubes match the structural aspects from experiment very well. Our energetic calculations show that a single-crystal GaN nanotube with [100]-oriented lateral facets is more stable than that with [110]-oriented lateral facets, when they have around the same wall thickness. For a specified orientation of the lateral facets on the single-crystal GaN nanotubes, the energetic stabilities of the tubes obey a P rule, in which P is the ratio of the number of four-coordinated atoms to the number of three-coordinated atoms. Furthermore, the Young's modulus of the considered GaN nanotubes decrease with increasing the ratio of the number of bulk atoms to the number of surface atoms in each type of tube. Our calculations and analysis demonstrate that the surface effect of a single-crystal nanotube enhances its Young's modulus significantly
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Growth and characterization of nonlinear optical single crystal: Nicotinic L-tartaric
Energy Technology Data Exchange (ETDEWEB)
Sheelarani, V.; Shanthi, J., E-mail: shanthinelson@gmail.com [Department of Physics, Avinashilingam Institute for Home Science and Higher Education for Women, Coimbatore-641043 (India)
2015-06-24
Nonlinear optical single crystals were grown from Nicotinic and L-Tartaric acid by slow evaporation technique at room temperature. Structure of the grown crystal was confirmed by single crystal X-ray diffraction studies, The crystallinity of the Nicotinic L-Tartaric (NLT) crystals was confirmed from the powder XRD pattern. The transparent range and cut off wavelength of the grown crystal was studied by the UV–Vis spectroscopic analysis.The thermal stability of the crystal was studied by TG-DTA. The second harmonic generation (SHG) efficiency of NLT was confirmed by Kurtz Perry technique.
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Hafnium carbide nanocrystal chains for field emitters
International Nuclear Information System (INIS)
Tian, Song; Li, Hejun; Zhang, Yulei; Ren, Jincui; Qiang, Xinfa; Zhang, Shouyang
2014-01-01
A hafnium carbide (HfC) nanostructure, i.e., HfC nanocrystal chain, was synthesized by a chemical vapor deposition (CVD) method. X-ray diffractometer, field-emission scanning electron microscope, transmission electron microscope, and energy-dispersive X-ray spectrometer were employed to characterize the product. The synthesized one-dimensional (1D) nanostructures with many faceted octahedral nanocrystals possess diameters of tens of nanometers to 500 nm and lengths of a few microns. The chain-like structures possess a single crystalline structure and preferential growth direction along the [1 0 0] crystal orientation. The growth of the chains occurred through the vapor–liquid–solid process along with a negative-feedback mechanism. The field emission (FE) properties of the HfC nanocrystal chains as the cold cathode emitters were examined. The HfC nanocrystal chains display good FE properties with a low turn-on field of about 3.9 V μm −1 and a high field enhancement factor of 2157, implying potential applications in vacuum microelectronics.
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Heterogeneous Monolithic Integration of Single-Crystal Organic Materials.
Park, Kyung Sun; Baek, Jangmi; Park, Yoonkyung; Lee, Lynn; Hyon, Jinho; Koo Lee, Yong-Eun; Shrestha, Nabeen K; Kang, Youngjong; Sung, Myung Mo
2017-02-01
Manufacturing high-performance organic electronic circuits requires the effective heterogeneous integration of different nanoscale organic materials with uniform morphology and high crystallinity in a desired arrangement. In particular, the development of high-performance organic electronic and optoelectronic devices relies on high-quality single crystals that show optimal intrinsic charge-transport properties and electrical performance. Moreover, the heterogeneous integration of organic materials on a single substrate in a monolithic way is highly demanded for the production of fundamental organic electronic components as well as complex integrated circuits. Many of the various methods that have been designed to pattern multiple heterogeneous organic materials on a substrate and the heterogeneous integration of organic single crystals with their crystal growth are described here. Critical issues that have been encountered in the development of high-performance organic integrated electronics are also addressed. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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Influence of nonstoichiometry and ordering on basic structure parameter of cubic titanium carbide
International Nuclear Information System (INIS)
Zueva, L.V.; Gusev, A.I.
1999-01-01
Effect of nonstoichiometry and phase transformations of the disorder-order type on the basis (B1 type) structure period of TiC y (0.5 y titanium carbide with formation of the Ti 2 C and Ti 3 C 2 superstructures leads to growth of the basic crystal lattice period as compared to disordered carbide. The problem on trends in static atomic displacement near vacancy is discussed with an account of the lattice period change [ru
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Hydrothermal growth of PbSO4 (Anglesite) single crystal
International Nuclear Information System (INIS)
Kikuta, Ko-ichi; Yoneta, Yasuhito; Yogo, Toshinobu; Hirano, Shin-ichi
1994-01-01
Hydrothermal growth of single crystals of PbSO 4 , which is known as a natural mineral called anglesite, was investigated. Lead nitrate and nitric acid solutions were found to be useful for the growth of angle-site on the basis of the experimental results on the dissolution behavior. Relatively large euhedral single crystals bound by {210} and {101} planes were successfully grown in 1.5 mol/kg Pb(NO 3 ) 2 at 400degC and 100 MPa. Optical characterization revealed that the grown anglesite crystals can be useful for scintillators material. (author)
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International Nuclear Information System (INIS)
Prakash, J. Thomas Joseph; Kumararaman, S.
2008-01-01
Gamma glycine has been successfully synthesized by taking glycine and potassium chloride and single crystals have been grown by solvent evaporation method for the first time. The grown single crystals have been analyzed with XRD, Fourier transform infrared (FTIR), and thermo gravimetric and differential thermal analyses (TG/DTA) measurements. Its mechanical behavior has been assessed by Vickers microhardness measurements. Its nonlinear optical property has been tested by Kurtz powder technique. Its optical behavior was examined by UV-vis., and found that the crystal is transparent in the region between 240 and 1200 nm. Hence, it may be very much useful for the second harmonic generation (SHG) applications
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Growth of single crystals from solutions using semi-permeable membranes
Varkey, A. J.; Okeke, C. E.
1983-05-01
A technique suitable for growth of single crystals from solutions using semi-preamble membranes is described. Using this technique single crystals of copper sulphate, potassium bromide and ammonium dihydrogen phosphate have been successfully grown. Advantages of this technique over other methods are discussed.
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Azeotropic binary solvent mixtures for preparation of organic single crystals
Li, X.; Kjellander, B.K.C.; Anthony, J.E.; Bastiaansen, C.W.M.; Broer, D.J.; Gelinck, G.H.
2009-01-01
Here, a new approach is introduced to prepare large single crystals of π-conjugated organic molecules from solution. Utilizing the concept of azeotropism, single crystals of tri-isopropylsilylethynyl pentacene (TIPS-PEN) with dimensions up to millimeters are facilely self-assembled from homogeneous
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Azeotropic binary solvent mixtures for preparation of organic single crystals
Li, X.; Kjellander, B.K.C.; Anthony, J.E.; Bastiaansen, C.W.M.; Broer, D.J.; Gelinck, G.H.
2009-01-01
Here, a new approach is introduced to prepare large single crystals of p-conjugated organic molecules from solution. Utilizing the concept of azeotropism, single crystals of tri-isopropylsilylethynyl pentacene (TIPS-PEN) with dimensions up to millimeters are facilely self-assembled from homogeneous
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Light emission from organic single crystals operated by electrolyte doping
Matsuki, Keiichiro; Sakanoue, Tomo; Yomogida, Yohei; Hotta, Shu; Takenobu, Taishi
2018-03-01
Light-emitting devices based on electrolytes, such as light-emitting electrochemical cells (LECs) and electric double-layer transistors (EDLTs), are solution-processable devices with a very simple structure. Therefore, it is necessary to apply this device structure into highly fluorescent organic materials for future printed applications. However, owing to compatibility problems between electrolytes and organic crystals, electrolyte-based single-crystal light-emitting devices have not yet been demonstrated. Here, we report on light-emitting devices based on organic single crystals and electrolytes. As the fluorescent materials, α,ω-bis(biphenylyl)terthiophene (BP3T) and 5,6,11,12-tetraphenylnaphthacene (rubrene) single crystals were selected. Using ionic liquids as electrolytes, we observed clear light emission from BP3T LECs and rubrene EDLTs.
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Parasitic neutron bragg reflections from large imperfect single crystals
Energy Technology Data Exchange (ETDEWEB)
Naguib, K.; Adib, M
1998-12-01
A formula is given which allows to calculate the contribution of the total Bragg scattering from different (hkl) planes to the neutron transmission through a large imperfect single crystals. The formula takes into account the crystal structure type, its mosaic spread value, the plane along which the crystal surface is cut along and its orientation with respect to the neutron beam direction. A computer program ISCANF-1 was developed to calculate the total parasitic scattering cross-section from different (hkl) planes as well as the nuclear and diffuse scattering cross-sections. The ISCANF-1 program was applied to calculate the neutron attenuation through Cu and Zn single crystals, each of them cut along (002) planes. The calculated values of the neutron transmission through Cu and Zn crystals were compared with the measured ones in the wavelength range 0.21-0.47 nm and 0.04-0.52 nm respectively. The measured and calculated values were found to be in reasonable agreement within the statistical accuracy. The computer program ISCANF-1 was also applied to investigate the effect of parasitic Bragg scattering on the neutron filtering characteristics of both Zn and Cu single crystals as a function of their physical parameters.
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Parasitic neutron bragg reflections from large imperfect single crystals
International Nuclear Information System (INIS)
Naguib, K.; Adib, M.
1998-01-01
A formula is given which allows to calculate the contribution of the total Bragg scattering from different (hkl) planes to the neutron transmission through a large imperfect single crystals. The formula takes into account the crystal structure type, its mosaic spread value, the plane along which the crystal surface is cut along and its orientation with respect to the neutron beam direction. A computer program ISCANF-1 was developed to calculate the total parasitic scattering cross-section from different (hkl) planes as well as the nuclear and diffuse scattering cross-sections. The ISCANF-1 program was applied to calculate the neutron attenuation through Cu and Zn single crystals, each of them cut along (002) planes. The calculated values of the neutron transmission through Cu and Zn crystals were compared with the measured ones in the wavelength range 0.21-0.47 nm and 0.04-0.52 nm respectively. The measured and calculated values were found to be in reasonable agreement within the statistical accuracy. The computer program ISCANF-1 was also applied to investigate the effect of parasitic Bragg scattering on the neutron filtering characteristics of both Zn and Cu single crystals as a function of their physical parameters
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Very High Cycle Fatigue of Ni-Based Single-Crystal Superalloys at High Temperature
Cervellon, A.; Cormier, J.; Mauget, F.; Hervier, Z.; Nadot, Y.
2018-05-01
Very high cycle fatigue (VHCF) properties at high temperature of Ni-based single-crystal (SX) superalloys and of a directionally solidified (DS) superalloy have been investigated at 20 kHz and a temperature of 1000 °C. Under fully reversed conditions (R = - 1), no noticeable difference in VHCF lifetimes between all investigated alloys has been observed. Internal casting pores size is the main VHCF lifetime-controlling factor whatever the chemical composition of the alloys. Other types of microstructural defects (eutectics, carbides), if present, may act as stress concentration sites when the number of cycles exceed 109 cycles or when porosity is absent by applying a prior hot isostatic pressing treatment. For longer tests (> 30 hours), oxidation also controls the main crack initiation sites leading to a mode I crack initiation from oxidized layer. Under such conditions, alloy's resistance to oxidation has a prominent role in controlling the VHCF. When creep damage is present at high ratios (R ≥ 0.8), creep resistance of SX/DS alloys governs VHCF lifetime. Under such high mean stress conditions, SX alloys developed to retard the initiation and creep propagation of mode I micro-cracks from pores have better VHCF lifetimes.
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Growth and microtopographic study of CuInSe{sub 2} single crystals
Energy Technology Data Exchange (ETDEWEB)
Chauhan, Sanjaysinh M.; Chaki, Sunil, E-mail: sunilchaki@yahoo.co.in; Deshpande, M. P. [Department of Physics, Sardar Patel University, Vallabh Vidyanagar, Gujarat - 388120 (India); Tailor, J. P. [Applied Physics Department, S.V.N.I.T., Surat, Gujarat - 395007 (India)
2016-05-23
The CuInSe{sub 2} single crystals were grown by chemical vapour transport (CVT) technique using iodine as transporting agent. The elemental composition of the as-grown CuInSe{sub 2} single crystals was determined by energy dispersive analysis of X-ray (EDAX). The unit cell crystal structure and lattice parameters were determined by X-ray diffraction (XRD) technique. The surface microtopographic study of the as-grown CuInSe{sub 2} single crystals surfaces were done to study the defects, growth mechanism, etc. of the CVT grown crystals.
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Mechanical properties of hydroxyapatite single crystals from nanoindentation data
Zamiri, A.; De, S.
2011-01-01
In this paper we compute elasto-plastic properties of hydroxyapatite single crystals from nanindentation data using a two-step algorithm. In the first step the yield stress is obtained using hardness and Young’s modulus data, followed by the computation of the flow parameters. The computational approach is first validated with data from existing literature. It is observed that hydroxyapatite single crystals exhibit anisotropic mechanical response with a lower yield stress along the [1010] crystallographic direction compared to the [0001] direction. Both work hardening rate and work hardening exponent are found to be higher for indentation along the [0001] crystallographic direction. The stress-strain curves extracted here could be used for developing constitutive models for hydroxyapatite single crystals. PMID:21262492
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Single-Crystal Diamond Nanobeam Waveguide Optomechanics
Directory of Open Access Journals (Sweden)
Behzad Khanaliloo
2015-12-01
Full Text Available Single-crystal diamond optomechanical devices have the potential to enable fundamental studies and technologies coupling mechanical vibrations to both light and electronic quantum systems. Here, we demonstrate a single-crystal diamond optomechanical system and show that it allows excitation of diamond mechanical resonances into self-oscillations with amplitude >200 nm. The resulting internal stress field is predicted to allow driving of electron spin transitions of diamond nitrogen-vacancy centers. The mechanical resonances have a quality factor >7×10^{5} and can be tuned via nonlinear frequency renormalization, while the optomechanical interface has a 150 nm bandwidth and 9.5 fm/sqrt[Hz] sensitivity. In combination, these features make this system a promising platform for interfacing light, nanomechanics, and electron spins.
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Ordered macro-microporous metal-organic framework single crystals
Shen, Kui
2018-01-16
We constructed highly oriented and ordered macropores within metal-organic framework (MOF) single crystals, opening up the area of three-dimensional-ordered macro-microporous materials (that is, materials containing both macro- and micropores) in single-crystalline form. Our methodology relies on the strong shaping effects of a polystyrene nanosphere monolith template and a double-solvent-induced heterogeneous nucleation approach. This process synergistically enabled the in situ growth of MOFs within ordered voids, rendering a single crystal with oriented and ordered macro-microporous structure. The improved mass diffusion properties of such hierarchical frameworks, together with their robust single-crystalline nature, endow them with superior catalytic activity and recyclability for bulky-molecule reactions, as compared with conventional, polycrystalline hollow, and disordered macroporous ZIF-8.
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Ordered macro-microporous metal-organic framework single crystals
Shen, Kui; Zhang, Lei; Chen, Xiaodong; Liu, Lingmei; Zhang, Daliang; Han, Yu; Chen, Junying; Long, Jilan; Luque, Rafael; Li, Yingwei; Chen, Banglin
2018-01-01
We constructed highly oriented and ordered macropores within metal-organic framework (MOF) single crystals, opening up the area of three-dimensional–ordered macro-microporous materials (that is, materials containing both macro- and micropores) in single-crystalline form. Our methodology relies on the strong shaping effects of a polystyrene nanosphere monolith template and a double-solvent–induced heterogeneous nucleation approach. This process synergistically enabled the in situ growth of MOFs within ordered voids, rendering a single crystal with oriented and ordered macro-microporous structure. The improved mass diffusion properties of such hierarchical frameworks, together with their robust single-crystalline nature, endow them with superior catalytic activity and recyclability for bulky-molecule reactions, as compared with conventional, polycrystalline hollow, and disordered macroporous ZIF-8.
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Ordered macro-microporous metal-organic framework single crystals
Shen, Kui; Zhang, Lei; Chen, Xiaodong; Liu, Lingmei; Zhang, Daliang; Han, Yu; Chen, Junying; Long, Jilan; Luque, Rafael; Li, Yingwei; Chen, Banglin
2018-01-01
We constructed highly oriented and ordered macropores within metal-organic framework (MOF) single crystals, opening up the area of three-dimensional-ordered macro-microporous materials (that is, materials containing both macro- and micropores) in single-crystalline form. Our methodology relies on the strong shaping effects of a polystyrene nanosphere monolith template and a double-solvent-induced heterogeneous nucleation approach. This process synergistically enabled the in situ growth of MOFs within ordered voids, rendering a single crystal with oriented and ordered macro-microporous structure. The improved mass diffusion properties of such hierarchical frameworks, together with their robust single-crystalline nature, endow them with superior catalytic activity and recyclability for bulky-molecule reactions, as compared with conventional, polycrystalline hollow, and disordered macroporous ZIF-8.
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International Nuclear Information System (INIS)
Mammadov, Kh.; Mirzayev, M.; Garibov, R.; Allahverdiyev, G.
2017-01-01
The territories of the Trans Caucasian Republics are characterized by high seismic activity. Therefore, the occurrence of cases of anthropogenic catastrophe including in the territories of nuclear reactors is not ruled out in case of natural disasters. Studies to create detectors based on B 4 C for recording ''cold'', ''hot'' and ''fast'' neutrons in order to increase the safety of nuclear reactors have been carried out in recent years. The B 4 C crystal structure is highly stable at relatively large intervals of temperature and pressure. The study of the thermo physical properties of samples of boron carbide irradiated with ionizing beams is interesting from the point of view to study of the stability of the structure and the stability of this compound. The thermal properties of B 4 C irradiated with ionizing γ radiation from a 60''Co source were investigated using the differential scanning calorimetric (DSC) methods. Upon irradiation with ionizing γ rays, a discrete change in the energy of the atoms occurs at the sites of the crystal lattice, the formation of active centers (radicals, ions, electrons), defects in the crystal lattice, the evaporation of crystalline hydrates, which are present in small amounts in bulk and crystalline compounds. The melting point of B 2 O 3 is 723 K, for boron 2348 K, for B 4 C 2623 K. The melting enthalpy for B 2 O 3 is 24.6 kJ/mol. With increasing temperature, the heat capacity and entropy of the non irradiated and irradiated B 4 C samples are increased. The nature of the change in the enthalpy and the Gibbs potential with increasing temperature depends on the presence of oxygen upon irradiation and during thermogravimetric analysis in the temperature range 298-1300 K. Changes in the values of thermodynamic functions occur due to the formation (under the influence of ionizing radiation) of excited atoms, active centers, defects in the crystal structure of
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Tzeng, Biing-Chiau; Chao, An
2015-01-26
The treatment of [AuCl(SMe2 )] with an equimolar amount of NaO5 NCS2 (O5 NCS2 =(aza-[18]crown-6)dithiocarbamate) in CH3 CN gave [Au2 (O5 NCS2 )2 ]⋅2 CH3 CN (2⋅2 CH3 CN), and its crystal structure displays a dinuclear gold(I)-azacrown ether ring and an intermolecular gold(I)⋅⋅⋅gold(I) contact of 2.8355(3) Å in crystal lattices. It is noted that two other single crystals of 2⋅tert-butylbenzene⋅H2 O and 2⋅0.5 m-xylene can be successfully obtained from a single-crystal-to-single-crystal (SCSC) transformation process by immersing single crystals of 2⋅2 CH3 CN in the respective solvents, and both also show intermolecular gold(I)⋅⋅⋅gold(I) contacts of 2.9420(5) and 2.890(2)-2.902(2) Å, respectively. Significantly, the emissions of all three 2⋅solvates are well correlated with their respective intermolecular gold(I)⋅⋅⋅gold(I) contacts, where such contacts increase with 2⋅2 CH3 CN (2.8355(3) Å)energies increase with 2⋅2 CH3 CN (602 nm)<2⋅0.5 m-xylene (583 nm)<2⋅tert-butylbenzene⋅H2 O (546 nm) as well. In this regard, we further examine the solvochromic luminescence for some other aromatics, and finally their emissions are within 546-602 nm. Obviously, the above results are mostly ascribed to the occurrence of intermolecular gold(I)⋅⋅⋅gold(I) contacts in 2⋅solvates, which are induced by the presence of various solvates in the solid state, as a key role to be responsible for their solvochromic luminescence. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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From nitrides to carbides: topotactic synthesis of the eta-carbides Fe3Mo3C and Co3Mo3C.
Alconchel, Silvia; Sapiña, Fernando; Martínez, Eduardo
2004-08-21
The molybdenum bimetallic interstitial carbides Fe(3)Mo(3)C and Co(3)Mo(3)C have been synthesized by temperature-programmed reaction (TPR) between the molybdenum bimetallic interstitial nitrides Fe(3)Mo(3)N and Co(3)Mo(3)N and a flowing mixture of CH(4) and H(2) diluted in Ar. These compounds have been characterized by X-ray diffraction, laser Raman spectroscopy, elemental analysis, energy dispersive analysis of X rays, thermal analysis (in air) and scanning electron microscopy (field emission). Their structures have been refined from X-ray powder diffraction data. These carbides crystallize in the cubic system, space group Fd3m[a= 11.11376(6) and 11.0697(3)[Angstrom] for Fe and Co compounds, respectively].
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Mesoscale martensitic transformation in single crystals of topological defects
Energy Technology Data Exchange (ETDEWEB)
Li, Xiao; Martínez-González, José A.; Hernández-Ortiz, Juan P.; Ramírez-Hernández, Abelardo; Zhou, Ye; Sadati, Monirosadat; Zhang, Rui; Nealey, Paul F.; de Pablo, Juan J.
2017-09-05
Liquid crystal blue phases (BPs) are highly ordered at two levels. Molecules exhibit orientational order at nanometer length scales, while chirality leads to ordered arrays of doubletwisted cylinders over micrometer scales. Past studies of polycrystalline BPs were challenged by grain boundaries between randomly oriented crystalline nanodomains. Here, the nucleation of BPs is controlled with considerable precision by relying on chemically nano-patterned surfaces, leading to macroscopic single-crystal BP specimens where the dynamics of meso-crystal formation can be directly observed. Theory and experiments show that transitions between two BPs having a different network structure proceed through local re-organization of the crystalline array, without diffusion of the double twisted cylinders. In solid crystals, martensitic transformations between crystal structures involve the concerted motion of a few atoms, without diffusion. The transformation between BPs, where crystal features arise in the sub-micron regime, is found to be martensitic in nature, with the diffusion-less feature associated to the collective behavior of the double twist cylinders. Single-crystal BPs are shown to offer fertile grounds for the study of directed crystal-nucleation and the controlled growth of soft matter.
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Feng, Wei; Wang, Zhigang; Zhang, Wenke
2017-02-28
Understanding the relationship between polymer chain conformation as well as the chain composition within the single crystal and the mechanical properties of the corresponding single polymer chain will facilitate the rational design of high performance polymer materials. Here three model systems of polymer single crystals, namely poly(ethylene oxide) (PEO), polyethylene (PE), and nylon-66 (PA66) have been chosen to study the effects of chain conformation, helical (PEO) versus planar zigzag conformation (PE, PA66), and chain composition (PE versus PA66) on the mechanical properties of a single polymer chain. To do that, steered molecular dynamics simulations were performed on those polymer single crystals by pulling individual polymer chains out of the crystals. Our results show that the patterns of force-extension curve as well as the chain moving mode are closely related to the conformation of the polymer chain in the single crystal. In addition, hydrogen bonds can enhance greatly the force required to stretch the polymer chain out of the single crystal. The dynamic breaking and reformation of multivalent hydrogen bonds have been observed for the first time in PA66 at the single molecule level.
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Two convenient low-temperature routes to single crystals of plutonium dioxide
Energy Technology Data Exchange (ETDEWEB)
Meredith, Nathan A. [Departments of Chemistry and Biochemistry, University of Notre Dame, Notre Dame, IN 46556 (United States); Wang, Shuao; Diwu, Juan [School of Radiation Medicine and Protection and School of Radiological and Interdisciplinary Sciences, Soochow University, Suzhou, Jiangsu 215123 (China); Albrecht-Schmitt, Thomas E., E-mail: talbrechtschmitt@gmail.com [Department of Chemistry and Biochemistry, Florida State University, Tallahassee, FL 32306 (United States)
2014-11-15
Highlights: • Two low-temperature routes to the growth single crystals of plutonium dioxide. • Safer methods of preparing PuO{sub 2} single crystals that do not involve solid-state synthetic techniques. • Solvothermal crystal growth of plutonium dioxide. - Abstract: During the solvothermal synthesis of a low-dimensional borate, KB{sub 5}O{sub 7}(OH){sub 2}⋅2H{sub 2}O, in the presence of Pu(III), single crystals of plutonium dioxide unexpectedly formed. Single crystals of PuO{sub 2} also formed during the hydrothermal synthesis of another borate, Na{sub 2}B{sub 5}O{sub 8}(OH)⋅2H{sub 2}O, in the presence of Pu(III). The reactions were conducted at 170 °C and 150 °C, respectively, which are much lower temperature than previously reported preparations of crystalline PuO{sub 2}. Yellow–green crystals with a tablet habit were characterized by single crystal X-ray diffraction and solid-state UV–vis–NIR absorption spectroscopy. The crystal structure was solved by direct methods with R{sub 1} = 1.26% for 19 unique observed reflections. PuO{sub 2} is cubic, space group Fm3{sup ‾}m, and adopts the fluorite structure type. The lattice parameter was determined to be a = 5.421(5) Å giving a volume of 159.3(2) Å{sup 3}. The absorption spectrum is consistent with Pu(IV)
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High definition TV projection via single crystal faceplate technology
Kindl, H. J.; St. John, Thomas
1993-03-01
Single crystal phosphor faceplates are epitaxial phosphors grown on crystalline substrates with the advantages of high light output, resolution, and extended operational life. Single crystal phosphor faceplate industrial technology in the United States is capable of providing a faceplate appropriate to the projection industry of up to four (4) inches in diameter. Projection systems incorporating cathode ray tubes utilizing single crystal phosphor faceplates will produce 1500 lumens of white light with 1000 lines of resolution, non-interlaced. This 1500 lumen projection system will meet all of the currently specified luminance and resolution requirements of Visual Display systems for flight simulators. Significant logistic advantages accrue from the introduction of single crystal phosphor faceplate CRT's. Specifically, the full performance life of a CRT is expected to increase by a factor of five (5); ie, from 2000 to 10,000 hours of operation. There will be attendant reductions in maintenance time, spare CRT requirements, system down time, etc. The increased brightness of the projection system will allow use of lower gain, lower cost simulator screen material. Further, picture performance characteristics will be more balanced across the full simulator.
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Perovskite single crystals and thin films for optoelectronic devices (Conference Presentation)
Li, Gang; Han, Qifeng; Yang, Yang; Bae, Sang-Hoon; Sun, Pengyu
2016-09-01
Hybrid organolead trihalide perovskite (OTP) solar cells have developed as a promising candidate in photovoltaics due to their excellent properties including a direct bandgap, strong absorption coefficient, long carrier lifetime, and high mobility. Most recently, formamidinium (NH2CH=NH2+ or FA) lead iodide (FAPbI3) has attracted significant attention due to several advantages: (1) the larger organic FA cation can replace the MA cation and form a more symmetric crystal structure, (2) the smaller bandgap of FAPbI3 allows for near infrared (NIR) absorption, and (3) FAPbI3 has an elevated decomposition temperature and thus potential to improve stability. Single crystals provide an excellent model system to study the intrinsic electrical and optical properties of these materials due to their high purity, which is particularly important to understand the limits of these materials. In this work, we report the growth of large ( 5 millimeter size) single crystal FAPbI3 using a novel liquid based crystallization method. The single crystal FAPbI3 demonstrated a δ-phase to α-phase transition with a color change from yellow to black when heated to 185°C within approximately two minutes. The crystal structures of the two phases were identified and the PL emission peak of the α-phase FAPbI3 (820 nm) shows clear red-shift compared to the FAPbI3 thin film (805 nm). The FAPbI3 single crystal shows a long carrier lifetime of 484 ns, a high carrier mobility of 4.4 cm2·V-1·s-1, and even more interestingly a conductivity of 1.1 × 10-7(ohm·cm)-1, which is approximately one order of magnitude higher than that of the MAPbI3 single crystal. Finally, high performance photoconductivity type photodetectors were successfully demonstrated using the single crystal FAPbI3.
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Elastic properties of Ti-24Nb-4Zr-8Sn single crystals with bcc crystal structure
International Nuclear Information System (INIS)
Zhang, Y.W.; Li, S.J.; Obbard, E.G.; Wang, H.; Wang, S.C.; Hao, Y.L.; Yang, R.
2011-01-01
Research highlights: → The single crystals of Ti2448 alloy with the bcc crystal structure were prepared. → The elastic moduli and constants were measured by several resonant methods. → The crystal shows significant elastic asymmetry in tension and compression. → The crystal exhibits weak nonlinear elasticity with large elastic strain ∼2.5%. → The crystal has weak atomic interactions against crystal distortion to low symmetry. - Abstract: Single crystals of Ti2448 alloy (Ti-24Nb-4Zr-8Sn in wt.%) were grown successfully using an optical floating-zone furnace. Several kinds of resonant methods gave consistent Young's moduli of 27.1, 56.3 and 88.1 GPa and shear moduli of 34.8, 11.0 and 14.6 GPa for the , and oriented single crystals, and C 11 , C 12 and C 44 of 57.2, 36.1 and 35.9 GPa respectively. Uniaxial testing revealed asymmetrical elastic behaviors of the crystals: tension caused elastic softening with a large reversible strain of ∼4% and a stress plateau of ∼250 MPa, whereas compression resulted in gradual elastic stiffening with much smaller reversible strain. The crystals exhibited weak nonlinear elasticity with a large elastic strain of ∼2.5% and a high strength, approaching ∼20% and ∼30% of its ideal shear and ideal tensile strength respectively. The crystals showed linear elasticity with a small elastic strain of ∼1%. These elastic deformation characteristics have been interpreted in terms of weakened atomic interactions against crystal distortion to low crystal symmetry under external applied stresses. These results are consistent with the properties of polycrystalline Ti2448, including high strength, low elastic modulus, large recoverable strain and weak strengthening effect due to grain refinement.
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Defect free single crystal thin layer
Elafandy, Rami Tarek Mahmoud
2016-01-28
A gallium nitride film can be a dislocation free single crystal, which can be prepared by irradiating a surface of a substrate and contacting the surface with an etching solution that can selectively etch at dislocations.
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Defect free single crystal thin layer
Elafandy, Rami Tarek Mahmoud; Ooi, Boon S.
2016-01-01
A gallium nitride film can be a dislocation free single crystal, which can be prepared by irradiating a surface of a substrate and contacting the surface with an etching solution that can selectively etch at dislocations.
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Arakere, Nagaraj K.; Swanson, Gregory R.
2000-01-01
High Cycle Fatigue (HCF) induced failures in aircraft gas-turbine engines is a pervasive problem affecting a wide range of components and materials. HCF is currently the primary cause of component failures in gas turbine aircraft engines. Turbine blades in high performance aircraft and rocket engines are increasingly being made of single crystal nickel superalloys. Single-crystal Nickel-base superalloys were developed to provide superior creep, stress rupture, melt resistance and thermomechanical fatigue capabilities over polycrystalline alloys previously used in the production of turbine blades and vanes. Currently the most widely used single crystal turbine blade superalloys are PWA 1480/1493 and PWA 1484. These alloys play an important role in commercial, military and space propulsion systems. PWA1493, identical to PWA1480, but with tighter chemical constituent control, is used in the NASA SSME (Space Shuttle Main Engine) alternate turbopump, a liquid hydrogen fueled rocket engine. Objectives for this paper are motivated by the need for developing failure criteria and fatigue life evaluation procedures for high temperature single crystal components, using available fatigue data and finite element modeling of turbine blades. Using the FE (finite element) stress analysis results and the fatigue life relations developed, the effect of variation of primary and secondary crystal orientations on life is determined, at critical blade locations. The most advantageous crystal orientation for a given blade design is determined. Results presented demonstrates that control of secondary and primary crystallographic orientation has the potential to optimize blade design by increasing its resistance to fatigue crack growth without adding additional weight or cost.
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Investigations on the nucleation kinetics of γ-glycine single crystal
International Nuclear Information System (INIS)
Yogambal, C.; Rajan Babu, D.; Ezhil Vizhi, R.
2014-01-01
Single crystals of γ-glycine were grown by slow evaporation technique. The crystalline system was confirmed by single crystal X-ray diffraction analysis. The optical absorption study has shown that the grown crystal possesses lower cut-off wavelength. Solubility and metastable zone width were estimated for different temperatures. The induction period of title compound was determined by varying the temperature and concentration. Nucleation parameters such as Gibbs volume free energy change (ΔG v ), interfacial tension (γ), critical free energy change of the nucleus (ΔG ⁎ ), nucleation rate (J), number of molecules in the critical nucleus (i ⁎ ) have been calculated for the aqueous solution grown γ-glycine single crystals. The second harmonic generation (SHG) of γ-glycine was confirmed by Q-switched Nd:YAG laser technique
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International Nuclear Information System (INIS)
Arun Kumar, R.; Senthilkumar, M.; Dhanasekaran, R.
2007-01-01
Yttrium calcium oxy borate single crystals were grown by the flux technique for the first time. Polycrystalline YCOB material was prepared by solid state reaction method. Single crystals of YCOB were grown using boron-tri-oxide flux. Several transparent single crystals of dimensions 10 x 5 x 5 mm 3 were obtained. The grown crystals were characterized by powder XRD and UV- VIS-NIR studies. The results of powder XRD confirm the crystalline structure of YCOB. The UV- VIS-NIR transmission spectrum reveals that the crystal is highly transparent (above 75%) from ultraviolet (220 nm) to near IR regions enabling it as a suitable candidate for high power UV applications
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High Performance Relaxor-Based Ferroelectric Single Crystals for Ultrasonic Transducer Applications
Directory of Open Access Journals (Sweden)
Yan Chen
2014-07-01
Full Text Available Relaxor-based ferroelectric single crystals Pb(Mg1/3Nb2/3O3-PbTiO3 (PMN-PT have drawn much attention in the ferroelectric field because of their excellent piezoelectric properties and high electromechanical coupling coefficients (d33~2000 pC/N, kt~60% near the morphotropic phase boundary (MPB. Ternary Pb(In1/2Nb1/2O3-Pb(Mg1/3Nb2/3O3-PbTiO3 (PIN-PMN-PT single crystals also possess outstanding performance comparable with PMN-PT single crystals, but have higher phase transition temperatures (rhombohedral to tetragonal Trt, and tetragonal to cubic Tc and larger coercive field Ec. Therefore, these relaxor-based single crystals have been extensively employed for ultrasonic transducer applications. In this paper, an overview of our work and perspectives on using PMN-PT and PIN-PMN-PT single crystals for ultrasonic transducer applications is presented. Various types of single-element ultrasonic transducers, including endoscopic transducers, intravascular transducers, high-frequency and high-temperature transducers fabricated using the PMN-PT and PIN-PMN-PT crystals and their 2-2 and 1-3 composites are reported. Besides, the fabrication and characterization of the array transducers, such as phased array, cylindrical shaped linear array, high-temperature linear array, radial endoscopic array, and annular array, are also addressed.
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CH3NH3PbCl3 Single Crystals: Inverse Temperature Crystallization and Visible-Blind UV-Photodetector
Maculan, Giacomo; Sheikh, Arif D.; Abdelhady, Ahmed L.; Saidaminov, Makhsud I.; Haque, Mohammed; Banavoth, Murali; Alarousu, Erkki; Mohammed, Omar F.; Wu, Tao; Bakr, Osman
2015-01-01
a new method of sizeable CH3NH3PbCl3 single crystal growth based on retrograde solubility behavior of hybrid perovskites. We show, for the first time, the energy band structure, charge-carrier recombination and transport properties of single crystal
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Highly efficient single-pass sum frequency generation by cascaded nonlinear crystals
DEFF Research Database (Denmark)
Hansen, Anders Kragh; Andersen, Peter E.; Jensen, Ole Bjarlin
2015-01-01
, despite differences in the phase relations of the involved fields. An unprecedented 5.5 W of continuous-wave diffraction-limited green light is generated from the single-pass sum frequency mixing of two diode lasers in two periodically poled nonlinear crystals (conversion efficiency 50%). The technique......The cascading of nonlinear crystals has been established as a simple method to greatly increase the conversion efficiency of single-pass second-harmonic generation compared to a single-crystal scheme. Here, we show for the first time that the technique can be extended to sum frequency generation...... is generally applicable and can be applied to any combination of fundamental wavelengths and nonlinear crystals....
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International Nuclear Information System (INIS)
Montney, Matthew R.; Supkowski, Ronald M.; Staples, Richard J.; LaDuca, Robert L.
2009-01-01
Hydrothermal reaction of divalent metal chlorides with glutaric acid and 4,4'-dipyridylamine (dpa) has afforded an isostructural family of coordination polymers with formulation [M(glu)(dpa)] n (M=Co (1), Ni (2), Cu (3); glu=glutarate). Square pyramidal coordination is seen in 1-3, with semi-ligation of a sixth donor to produce a '5+1' extended coordination sphere. Neighboring metal atoms are linked into 1D [M(glu)] n neutral chains through chelating/monodentate bridging glutarate moieties with a syn-anti binding mode, and semi-chelation of the pendant carboxylate oxygen. These chains further connect into 2D layers through dipodal dpa ligands. Neighboring layers stack into the pseudo 3D crystal structure of 1-3 through supramolecular hydrogen bonding between dpa amine units and the semi-chelated glutarate oxygen atoms. The variable temperature magnetic behavior of 1-3 was explored and modeled as infinite 1D Heisenberg chains. Notably, complex 3 undergoes a thermally induced single crystal-to-single crystal transformation between centric and acentric space groups, with a conformationally disordered unilayer structure at 293 K and an ordered bilayer structure at 173 K. All materials were further characterized via infrared spectroscopy and elemental and thermogravimetric analyses. - Graphical abstract: The coordination polymers [M(glu)(dpa)] n (M=Co (1), Ni (2), Cu (3); glu=glutarate, dpa=4,4'-dipyridylamine) exhibit 2D layer structures based on 1D [M(glu)] n chains linked through dpa tethers. Antiferromagnetic coupling is observed for 2 and 3, while ferromagnetism is predominant in 1. Compound 3 undergoes a thermally induced single crystal-to-single crystal transformation from an acentric to a centrosymmetric space group
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Irradiation creep in zirconium single crystals
International Nuclear Information System (INIS)
MacEwen, S.R.; Fidleris, V.
1976-07-01
Two identical single crystals of crystal bar zirconium have been creep tested in reactor. Both specimens were preirradiated at low stress to a dose of about 4 x 10 23 n/m 2 (E > 1 MeV), and were then loaded to 25 MPa. The first specimen was loaded with reactor at full power, the second during a shutdown. The loading strain for both crystals was more than an order of magnitude smaller than that observed when an identical unirradiated crystal was loaded to the same stress. Both crystals exhibited periods of primary creep, after which their creep rates reached nearly constant values when the reactor was at power. During shutdowns the creep rates decreased rapidly with time. Electron microscopy revealed that the irradiation damage consisted of prismatic dislocation loops, approximately 13.5 nm in diameter. Cleared channels, identified as lying on (1010) planes, were also observed. The results are discussed in terms of the current theories for flux enhanced creep in the light of the microstructures observed. (author)
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Patterning of Perovskite Single Crystals
Corzo, Daniel
2017-06-12
As the internet-of-things hardware integration continues to develop and the requirements for electronics keep diversifying and expanding, the necessity for specialized properties other than the classical semiconductor performance becomes apparent. The success of emerging semiconductor materials depends on the manufacturability and cost as much as on the properties and performance they offer. Solution-based semiconductors are an emerging concept that offers the advantage of being compatible with large-scale manufacturing techniques and have the potential to yield high-quality electronic devices at a lower cost than currently available solutions. In this work, patterns of high-quality MAPbBr3 perovskite single crystals in specific locations are achieved through the modification of the substrate properties and solvent engineering. The fabrication of the substrates involved modifying the surface adhesion forces through functionalization with self-assembled monolayers and patterning them by photolithography processes. Spin coating and blade coating were used to deposit the perovskite solution on the modified silicon substrates. While single crystal perovskites were obtained with the modification of substrates alone, solvent engineering helped with improving the Marangoni flows in the deposited droplets by increasing the contact angle and lowering the evaporation rate, therefore controlling and improving the shape of the grown perovskite crystals. The methodology is extended to other types of perovskites such as the transparent MAPbCl3 and the lead-free MABi2I9, demonstrating the adaptability of the process. Adapting the process to electrode arrays opened up the path towards the fabrication of optoelectronic devices including photodetectors and field-effect transistors, for which the first iterations are demonstrated. Overall, manufacturing and integration techniques permitting the fabrication of single crystalline devices, such as the method in this thesis work, are
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Growth and characterization of nonlinear optical single crystals: bis ...
Indian Academy of Sciences (India)
Administrator
molecules have received great attention for NLO applica- tions. However ... Figure 3. Single crystals of bis(cyclohexylammonium) terephthalate (crystal a) and cyclohexylammo- .... from ground state to higher energy states.17 Optical window ...
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Electrolytic coloration and spectral properties of hydroxyl-doped potassium chloride single crystals
International Nuclear Information System (INIS)
Gu Hongen; Wu Yanru
2011-01-01
Hydroxyl-doped potassium chloride single crystals are colored electrolytically at various temperatures and voltages using a pointed cathode and a flat anode. Characteristic OH - spectral band is observed in the absorption spectrum of uncolored single crystal. Characteristic O - , OH - , U, V 2 , V 3 , O 2- -V a + , F, R 2 and M spectral bands are observed simultaneously in absorption spectra of colored single crystals. Current-time curve for electrolytic coloration of hydroxyl-doped potassium chloride single crystal and its relationship with electrolytic coloration process are given. Production and conversion of color centers are explained. - Highlights: → Expanded the traditional electrolysis method. → Hydroxyl-doped potassium chloride crystals were colored electrolytically for the first time. → Useful V, F and F-aggregate color centers were produced in colored crystals. → V color centers were produced directly and F and F-aggregate color centers indirectly.
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X-ray dosimetry of TlGaSe2 single crystals
International Nuclear Information System (INIS)
Kerimova, E.M.; Mustafaeva, S.N.; Mamedbeili, S.D.; Jabarov, J.N.; Iskenderova, P.M.; Kazimov, S.B.
2002-01-01
TlGaSe 2 compound belongs to group of layered semiconductors of A 3 B 3 C 2 6 -type. Photoelectric and optical properties of TlGaSe 2 single crystals were investigated in detail. Influence of gamma-, electron and neutron radiation on photoelectric properties of TlGaSe 2 single crystals is investigated too. The present work deals with experimental results relative to X-ray dosimetric characteristics of TlGaSe 2 crystals at 300 K. X-ray conductivity and X-ray dosimetric characteristic measurements are carried out in low load resistance regime. The source of X-ray radiation is the installation of X-ray diffraction analysis (URS-55a) with the BCV-2(Cu). Intensity of X-ray radiation (E) is regulated by measurement with current variation in tube at each given value of X-ray radiation dose E (R/min) are measured by crystal dosimeter DRGZ-02. X-ray conductivity coefficients K σ characterising X-ray sensitivity of investigated crystals are determined as the relative change of conductivity under X-ray radiation a per dose. There have been determined values of characteristic coefficients of TlGaSe 2 single crystal X-ray conductivity at different values of accelerating voltage (V a ) on the tube and corresponding doses of X-ray radiation. Analysis of obtained data showed that X-ray conductivity coefficients K σ in studied crystals are regularly decreased (from 0.276 to 0.033) as with the rise of dose (E=0.75-78.0 R/min) as with the increase of values of V a on X-ray tube (V a =254-50 keV). One of the possible reasons of observed regularities is that X-ray conductivity in investigated crystals, especially at comparatively low V a is due predominantly to radiation of thin layer of crystal. In this case with the rise of radiation intensity there have been started to prevail the mechanism of surface quadratic recombination which leads to observed decrease of X-ray conductivity. With the rise of accelerating potential 'effective hardness' is increased, as a result of which there
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Laser generation in opal-like single-crystal and heterostructure photonic crystals
Kuchyanov, A. S.; Plekhanov, A. I.
2016-11-01
This study describes the laser generation of a 6Zh rhodamine in artificial opals representing single-crystal and heterostructure films. The spectral and angular properties of emission and the threshold characteristics of generation are investigated. In the case where the 6Zh rhodamine was in a bulk opal, the so-called random laser generation was observed. In contrast to this, the laser generation caused by a distributed feedback inside the structure of the photonic bandgap was observed in photonic-crystal opal films.
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Laser induced single-crystal transition in polycrystalline silicon
International Nuclear Information System (INIS)
Vitali, G.; Bertolotti, M.; Foti, G.; Rimini, E.
1978-01-01
Transition to single crystal of polycrystalline Si material underlying a Si crystal substrate of 100 orientation was obtained via laser irradiation. The changes in the structure were analyzed by reflection high energy electron diffraction and by channeling effect technique using 2.0 MeV He Rutherford scattering. The power density required to induce the transition in a 4500 A thick polycrystalline layer is about 70 MW/cm 2 (50ns). The corresponding amorphous to single transition has a threshold of about 45 MW/cm 2 . (orig.) 891 HPOE [de
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Cyclic saturation dislocation structures of multiple-slip-oriented copper single crystals
International Nuclear Information System (INIS)
Li, X.W.; Chinese Academy of Sciences, Shenyang; Umakoshi, Y.; Li, S.X.; Wang, Z.G.
2001-01-01
The dislocation structures of [011] and [ anti 111] multiple-slip-oriented Cu single crystals cyclically saturated at constant plastic strain amplitudes were investigated through transmission electron microscopy. The results obtained on [001] multiple-slip-oriented Cu single crystals were also included for summarization. Unlike the case for single-slip-oriented Cu single crystals, the crystallographic orientation has a strong effect on the saturation dislocation structure in these three multiple-slip-oriented crystals. For the [011] crystal, different dislocation patterns such as veins, PSB walls, labyrinths and PSB ladders were observed. The formation of PSB ladders is believed to be a major reason for the existence of a plateau region in the cyclic stress-strain (CSS) curve for the [011] crystal. The cyclic saturation dislocation structure of a [ anti 111] crystal cycled at a low applied strain amplitude γ pl of 2.0 x 10 -4 was found to consist of irregular cells, which would develop into a more regular arrangement (e. g. PSB ladder-like) and the scale of which tends to decrease with increasing γ pl . Finally, three kinds of representative micro-deformation mode were summarized and termed as labyrinth-mode (or [001]-mode), cell-mode (or [ anti 111]-mode) and PSB ladder-mode (or [011]-mode). (orig.)
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Sample Size Induced Brittle-to-Ductile Transition of Single-Crystal Aluminum Nitride
2015-08-01
ARL-RP-0528 ● AUG 2015 US Army Research Laboratory Sample Size Induced Brittle-to- Ductile Transition of Single-Crystal Aluminum...originator. ARL-RP-0528 ● AUG 2015 US Army Research Laboratory Sample Size Induced Brittle-to- Ductile Transition of Single-Crystal...Sample Size Induced Brittle-to- Ductile Transition of Single-Crystal Aluminum Nitride 5a. CONTRACT NUMBER 5b. GRANT NUMBER 5c. PROGRAM ELEMENT
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Oriented growing and anisotropy of emission properties of lanthanum hexaboride single crystals
International Nuclear Information System (INIS)
Lazorenko, V.I.; Lotsko, D.V.; Platonov, V.F.; Kovalev, A.V.; Galasun, A.P.; Matvienko, A.A.; Klinkov, A.E.
1987-01-01
Single crystals of lanthanum hexaboride with preset crystallographic orientation are grown by the method of crucible-free zone melting. It is shown that oriented growing of single crystals of the given compound is possible only when using seed crystals of the required orientation because no predominant orientation of the LaB 6 growth is found in case of spontaneous crystallization. Orientation of spontaneously growing LaB 6 crystals does not depend on their growth rate, degree of the melt diffusion annealing, purity of the inital powder. Anisotropy of the electronic work function for single crystal lanthanum hexaboride is confirmed. Its value grows as (100)<(110)<(111). Conditions of the preliminary thermovacuum purification of the surface are shown to affect the measured work function
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Neutron Transmission of Single-crystal Sapphire Filters
Adib, M.; Kilany, M.; Habib, N.; Fathallah, M.
2005-05-01
An additive formula is given that permits the calculation of the nuclear capture, thermal diffuse and Bragg scattering cross-sections as a function of sapphire temperature and crystal parameters. We have developed a computer program that allows calculations of the thermal neutron transmission for the sapphire rhombohedral structure and its equivalent trigonal structure. The calculated total cross-section values and effective attenuation coefficient for single-crystalline sapphire at different temperatures are compared with measured values. Overall agreement is indicated between the formula and experimental data. We discuss the use of sapphire single crystal as a thermal neutron filter in terms of the optimum cystal thickness, mosaic spread, temperature, cutting plane and tuning for efficient transmission of thermal-reactor neutrons.
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Effect of Metal Dopant on Ninhydrin—Organic Nonlinear Optical Single Crystals
Directory of Open Access Journals (Sweden)
R. S. Sreenivasan
2013-01-01
Full Text Available In the present work, metal (Cu2+-substituted ninhydrin single crystals were grown by slow evaporation method. The grown crystals have been subjected to single crystal XRD, powder X-ray diffraction, FTIR, dielectric and SHG studies. Single crystal X-ray diffraction analysis reveals that the compound crystallizes in monoclinic system with noncentrosymmetric space group P21 with lattice parameters a=11.28 Å, b=5.98 Å, c=5.71 Å, α=90∘, β=98.57, γ=90∘, and V=381 (Å3, which agrees very well with the reported value. The sharp and strong peaks in the powder X-ray diffraction pattern confirm the good crystallinity of the grown crystals. The presence of dopants marginally altered the lattice parameters without affecting the basic structure of the crystal. The UV-Vis transmittance spectrum shows that the crystal has a good optical transmittance in the entire visible region with lower cutoff wavelength 314 nm. The vibrational frequencies of various functional groups in the crystals have been derived from FT-IR analysis. Based on the shifts in the vibrations, the presence of copper in the lattice of the grown crystal is clearly established from the pure ninhydrin crystals. Both dielectric constant and dielectric loss decrease with the increase in frequency. The second harmonic generation efficiency was measured by employing powder Kurtz method.
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Single Crystal Filters for Neutron Spectrometry
International Nuclear Information System (INIS)
Habib, N.
2008-01-01
A study of neutron transmission properties trough a large single crystals specimens of Si, Ge, Pb, Bi and sapphire at 300 K and 80 K have been made for a wide range of neutron energies. The effectiveness of such filters is given by the ratio of the total cross-section of unwanted epithermal neutrons to that the desired thermal neutron beam and by the optimum choice of the crystal orientation, its mosaic spread, thickness and temperature.Our study indicates that sapphire is significantly more effective than the others for a wide range of neutron energies
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Helium generation and diffusion in graphite and some carbides
International Nuclear Information System (INIS)
Holt, J.B.; Guinan, M.W.; Hosmer, D.W.; Condit, R.H.; Borg, R.J.
1976-01-01
The cross section for the generation of helium in neutron irradiated carbon was found to be 654 mb at 14.4 MeV and 744 mb at 14.9 MeV. Extrapolating to 14.1 MeV (the fusion reactor spectrum) gives 615 mb. The diffusion of helium in dense polycrystalline graphite and in pyrographite was measured and found to be D = 7.2 x 10 -7 m 2 s -1 exp (-80 kJ/RT). It is assumed that diffusion is primarily in the basal plane direction in crystals of the graphite. In polycrystalline graphite the path length is a factor of √2 longer than the measured distance due to the random orientation mismatch between successive grains. Isochronal anneals (measured helium release as the specimen is steadily heated) were run and maximum release rates were found at 200 0 C in polycrystalline graphite, 1000 0 C in pyrographite, 1350 0 C in boron carbide, and 1350 0 and 2400 0 C (two peaks) in silicon carbide. It is concluded that in these candidates for curtain materials in fusion reactors the helium releases can probably occur without bubble formation in graphites, may occur in boron carbide, but will probably cause bubble formation in silicon carbide. 7 figures
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Iron single crystal growth from a lithium-rich melt
Fix, M.; Schumann, H.; Jantz, S. G.; Breitner, F. A.; Leineweber, A.; Jesche, A.
2018-03-01
α -Fe single crystals of rhombic dodecahedral habit were grown from a Li84N12Fe∼3 melt. Crystals of several millimeter along a side form at temperatures around T ≈ 800 ° C. Upon further cooling the growth competes with the formation of Fe-doped Li3N. The b.c.c. structure and good sample quality of α -Fe single crystals were confirmed by X-ray and electron diffraction as well as magnetization measurements and chemical analysis. A nitrogen concentration of 90 ppm was detected by means of carrier gas hot extraction. Scanning electron microscopy did not reveal any sign of iron nitride precipitates.
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Strengthening mechanisms of Fe nanoparticles for single crystal Cu–Fe alloy
International Nuclear Information System (INIS)
Shi, Guodong; Chen, Xiaohua; Jiang, Han; Wang, Zidong; Tang, Hao; Fan, Yongquan
2015-01-01
A single crystal Cu–Fe alloy with finely dispersed precipitate Fe nanoparticles was fabricated in this study. The interface relationship of iron nanoparticle and copper matrix was analyzed with a high-resolution transmission electron microscope (HRTEM), and the effect of Fe nanoparticles on mechanical properties of single crystal Cu–Fe alloy was discussed. Results show that, the finely dispersed Fe nanoparticles can be obtained under the directional solidification condition, with the size of 5–50 nm and the coherent interface between the iron nanoparticle and the copper matrix. Single crystal Cu–Fe alloy possesses improved tensile strength of 194.64 MPa, and total elongation of 44.72%, respectively, at room temperature, in contrast to pure Cu sample. Nanoparticles which have coherent interface with matrix can improve the dislocation motion state. Some dislocations can slip through the nanoparticle along the coherent interface and some dislocations can enter into the nanoparticles. Thus to improve the tensile strength of single crystal Cu–Fe alloy without sacrificing the ductility simultaneously. Based on the above analyses, strengthening mechanisms of Fe nanoparticles for single crystal Cu–Fe alloy was described
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Growth and characterization of Sm3+ doped cerium oxalate single crystals
Directory of Open Access Journals (Sweden)
Minu Mary C
2016-07-01
Full Text Available Single crystals of Sm3+ doped cerium oxalate decahydrate were synthesized using single diffusion gel technique and the conditions influencing the size, morphology, nucleation density and quality of the crystals were optimized. Highly transparent single crystals of average size 3 mm × 2 mm × 1 mm with well-defined hexagonal morphology were grown during a time period of two weeks. X-ray powder diffraction analysis revealed that the grown crystals crystallize in the monoclinic system with space group P21/c as identical with the pure cerium oxalate. The various functional groups of the oxalate ligand and the water of crystallization were identified by Fourier transform infrared spectroscopy. The photoluminescence spectrum of the Sm3+ doped cerium oxalate indicated that the Sm3+ ions are optically active in the cerium oxalate matrix. The crystal has a strong and efficient orange red emission with a wavelength peak at 595 nm and hence can be effectively used for optical amplification. Microhardness measurements of the crystal revealed that they belong to the soft material category.
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Electrolytic coloration and spectral properties of hydroxyl-doped potassium bromide single crystals
International Nuclear Information System (INIS)
Qi, Lan; Song, Cuiying; Gu, Hongen
2013-01-01
Hydroxyl-doped potassium bromide single crystals are colored electrolytically at various temperatures and voltages by using a pointed cathode and a flat anode. The characteristic OH − spectral band is observed in absorption spectrum of uncolored single crystal. The characteristic O − , OH − , U, V 2 , O 2− −V a + , M L1 , F and M spectral bands are observed simultaneously in absorption spectra of colored single crystals. Current–time curve for electrolytic coloration of hydroxyl-doped potassium bromide single crystal and its relationship with electrolytic coloration processes are given. Production and conversion of color centers are explained. - Highlights: ► We expanded the traditional electrolysis method. ► Hydroxyl-doped potassium bromide crystals were colored electrolytically for the first time. ► Useful V, F and F-aggregate color centers were produced in colored crystals. ► V color centers were produced directly and F as well as F-aggregate color centers indirectly.
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Tungsten carbide and tungsten-molybdenum carbides as automobile exhaust catalysts
International Nuclear Information System (INIS)
Leclercq, L.; Daubrege, F.; Gengembre, L.; Leclercq, G.; Prigent, M.
1987-01-01
Several catalyst samples of tungsten carbide and W, Mo mixed carbides with different Mo/W atom ratios, have been prepared to test their ability to remove carbon monoxide, nitric oxide and propane from a synthetic exhaust gas simulating automobile emissions. Surface characterization of the catalysts has been performed by X-ray photoelectron spectroscopy (XPS) and selective chemisorption of hydrogen and carbon monoxide. Tungsten carbide exhibits good activity for CO and NO conversion, compared to a standard three-way catalyst based on Pt and Rh. However, this W carbide is ineffective in the oxidation of propane. The Mo,W mixed carbides are markedly different having only a very low activity. 9 refs.; 10 figs.; 5 tabs
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Crystal growth and optical properties of Sm:CaNb2O6 single crystal
International Nuclear Information System (INIS)
Di Juqing; Xu Xiaodong; Xia Changtai; Zeng Huidan; Cheng Yan; Li Dongzhen; Zhou Dahua; Wu Feng; Cheng Jimeng; Xu Jun
2012-01-01
Highlights: ► Sm:CaNb 2 O 6 single crystal was grown by the Czochralski method. ► Thermal expansion coefficients and J–O parameters were calculated. ► We found that this crystal had high quantum efficiency of 97%. - Abstract: Sm:CaNb 2 O 6 single crystal has been grown by the Czochralski method. Its high-temperature X-ray powder diffraction, optical absorption, emission spectroscopic as well as lifetime have been studied. Thermal expansion coefficients (α), J–O parameters (Ω i ), radiative lifetime (τ rad ), branching ratios (β) and stimulated emission cross-sections (σ e ) were calculated. The quantum efficiency (η) was calculated to be 97%. The intense peak emission cross section at 610, 658 nm were calculated to be 2.40 × 10 −21 , 2.42 × 10 −21 cm 2 . These results indicate that Sm:CaNb 2 O 6 crystal has potential use in visible laser and photonic devices area.
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Energy Technology Data Exchange (ETDEWEB)
Li, X.W.; Liu, T. [Superalloys Division, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016 (China); Wang, L., E-mail: wangli@imr.ac.cn [Superalloys Division, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016 (China); Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016 (China); Liu, X.G.; Lou, L.H. [Superalloys Division, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016 (China); Zhang, J. [Superalloys Division, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016 (China); Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016 (China)
2015-07-15
Effect of carbon content on the microstructure and creep properties of a 3rd generation single crystal nickel-base superalloy has been investigated by the scanning electron microscope, X-ray computed tomography and electron probe microanalyzer. With the increase of the carbon content, MC carbides evolve from octahedral to well-developed dendrite, which promotes the formation of microporosity. Moreover, the volume fraction of porosity increases in the experimental alloys after solution heat treatment. As a result, the increase in the size of MC carbides and the porosity has a detrimental effect on the low temperature and high stress creep behavior of the alloys. The specimen crept at 850 °C and 586 MPa with the carbon content of 430 ppm shows the shortest rupture life due to the largest primary creep strain. However, the creep behavior of the alloy at 1120 °C and 140 MPa gets better as the carbon content increases from 88 to 430 ppm. TCP phase is observed near the fracture surfaces of the alloys, which explores as a potential cause for the creep rupture. However, the formation of TCP phase is effectively suppressed for decreasing segregation of the alloying elements, which results in the improvement of the creep life in the alloy with 430 ppm carbon at 1120 °C and 140 MPa.
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Single Crystals of Organolead Halide Perovskites: Growth, Characterization, and Applications
Peng, Wei
2017-04-01
With the soaring advancement of organolead halide perovskite solar cells rising from a power conversion efficiency of merely 3% to more than 22% shortly in five years, researchers’ interests on this big material family have been greatly spurred. So far, both in-depth studies on the fundamental properties of organolead halide perovskites and their extended applications such as photodetectors, light emitting diodes, and lasing have been intensively reported. The great successes have been ascribed to various superior properties of organolead halide hybrid perovskites such as long carrier lifetimes, high carrier mobility, and solution-processable high quality thin films, as will be discussed in Chapter 1. Notably, most of these studies have been limited to their polycrystalline thin films. Single crystals, as a counter form of polycrystals, have no grain boundaries and higher crystallinity, and thus less defects. These characteristics gift single crystals with superior optical, electrical, and mechanical properties, which will be discussed in Chapter 2. For example, organolead halide perovskite single crystals have been reported with much longer carrier lifetimes and higher carrier mobilities, which are especially intriguing for optoelectronic applications. Besides their superior optoelectronic properties, organolead halide perovskites have shown large composition versatility, especially their organic components, which can be controlled to effectively adjust their crystal structures and further fundamental properties. Single crystals are an ideal platform for such composition-structure-property study since a uniform structure with homogeneous compositions and without distraction from grain boundaries as well as excess defects can provide unambiguously information of material properties. As a major part of work of this dissertation, explorative work on the composition-structure-property study of organic-cation-alloyed organolead halide perovskites using their single
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Study of structural and optical properties of YAG and Nd:YAG single crystals
Energy Technology Data Exchange (ETDEWEB)
Kostić, S. [Institute of Physics, University of Belgrade, P.O. Box 68, Pregrevica 118, Zemun, Belgrade (Serbia); Lazarević, Z.Ž., E-mail: lzorica@yahoo.com [Institute of Physics, University of Belgrade, P.O. Box 68, Pregrevica 118, Zemun, Belgrade (Serbia); Radojević, V. [Faculty of Technology and Metallurgy, University of Belgrade, Belgrade (Serbia); Milutinović, A.; Romčević, M.; Romčević, N.Ž. [Institute of Physics, University of Belgrade, P.O. Box 68, Pregrevica 118, Zemun, Belgrade (Serbia); Valčić, A. [Faculty of Technology and Metallurgy, University of Belgrade, Belgrade (Serbia)
2015-03-15
Highlights: • Transparent YAG and pale pink Nd:YAG single crystals were produced by the Czochralski technique. • Growth mechanisms and shape of the liquid/solid interface and incorporation of Nd{sup 3+} were studied. • The structure of the crystals was investigated by X-ray diffraction, Raman and IR spectroscopy. • The 15 Raman and 17 IR modes were observed. • The obtained YAG and Nd:YAG single crystals were without core and of good optical quality. - Abstract: Yttrium aluminum garnet (YAG, Y{sub 3}Al{sub 5}O{sub 12}) and yttrium aluminum garnet doped with neodymium (Nd:YAG) single crystals were grown by the Czochralski technique. The critical diameter and the critical rate of rotation were calculated. Suitable polishing and etching solutions were determined. As a result of our experiments, the transparent YAG and pale pink Nd:YAG single crystals were produced. The obtained crystals were studied by X-ray diffraction, Raman and IR spectroscopy. The crystal structure was confirmed by XRD. The 15 Raman and 17 IR modes were observed. The Raman and IR spectroscopy results are in accordance with X-ray diffraction analysis. The obtained YAG and Nd:YAG single crystals were without core and of good optical quality. The absence of a core was confirmed by viewing polished crystal slices. Also, it is important to emphasize that the obtained Nd:YAG single crystal has a concentration of 0.8 wt.% Nd{sup 3+} that is characteristic for laser materials.
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Directory of Open Access Journals (Sweden)
Chih-Chieh Wang
2017-12-01
Full Text Available A 3D supramolecular network, [Cd(bipy(C4O4(H2O2]·3H2O (1 (bipy = 4,4′-bipyridine and C4O42− = dianion of H2C4O4, constructed by mixed-ligand two-dimensional (2D metal-organic frameworks (MOFs has been reported and structurally determined by the single-crystal X-ray diffraction method and characterized by other physicochemical methods. In 1, the C4O42− and bipy both act as bridging ligands connecting the Cd(II ions to form a 2D layered MOF, which are then extended to a 3D supramolecular network via the mutually parallel and interpenetrating arrangements among the 2D-layered MOFs. Compound 1 shows a two-step dehydration process with weight losses of 11.0% and 7.3%, corresponding to the weight-loss of three guest and two coordinated water molecules, respectively, and exhibits an interesting reversible single-crystal-to-single-crystal (SCSC structural transformation upon de-hydration and re-hydration for guest water molecules. The SCSC structural transformation have been demonstrated and monitored by single-crystal and X-ray powder diffraction, and thermogravimetic analysis studies.
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Mechanism of the superior mechanical strength of nanometer-sized metal single crystals revealed
Afify, N. D.
2013-10-01
Clear understanding of the superior mechanical strength of nanometer-sized metal single crystals is required to derive advanced mechanical components retaining such superiority. Although high quality studies have been reported on nano-crystalline metals, the superiority of small single crystals has neither been fundamentally explained nor quantified to this date. Here we present a molecular dynamics study of aluminum single crystals in the size range from 4.1 nm to 40.5 nm. We show that the ultimate mechanical strength deteriorates exponentially as the single crystal size increases. The small crystals superiority is explained by their ability to continuously form vacancies and to recover them. © 2013 Published by Elsevier B.V.
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Regularities of recrystallization in rolled Zr single crystals
International Nuclear Information System (INIS)
Isaenkova, M; Perlovich, Yu; Fesenko, V; Krymskaya, O; Krapivka, N; Thu, S S
2015-01-01
Experiments by rolled single crystals give a more visible conception of the operating mechanisms of plastic deformation and the following recrystallization, than experiments by polycrystals. Studies by usage of X-ray diffraction methods were conducted by Zr single crystals. It was revealed, that regions of the α-Zr matrix, deformed mainly by twinning, are characterized with decreased tendency to recrystallization. Orientations of recrystallized α-Zr grains correspond to “slopes” of maxima in the rolling texture, where the level of crystalline lattice distortion is maximal and the number of recrystallization nuclei is most of all. (paper)
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The use of single-crystal iron frames in transient field measurements
International Nuclear Information System (INIS)
Zalm, P.C.; Laan, J. van der; Middelkoop, G. van
1979-01-01
Single-crystal Fe frames have been investigated for use as a ferromagnetic backing in transient magnetic field experiments. For this purpose the surface magnetization as a function of applied magnetic field has been determined with the magneto-optical Kerr effect. The frames, which have two sides parallel to the crystal axis, can be fully magnetized at low external fields such that fringing fields are negligibly small. These single-crystal Fe backings have been used in several transient magnetic field experiments. Comparison of the measured precession angles with previous results, obtained in polycrystalline Fe foils at high external magnetic fields, shows that the single-crystal backings are satisfactory. After extended periods of heavy-ion bombardment the crystals exhibited no radiation damage effects. The absence of fringing fields leads to a reduction of a factor of four in the measuring time for transient field experiments. (Auth.)
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Growth features of ammonium hydrogen d-tartrate single crystals
Indian Academy of Sciences (India)
Unknown
Abstract. Ammonium hydrogen d-tartrate (d-AHT) single crystals were grown in silica gel. The growth fea- ... solution (specific gravity, 1⋅04 g/cc) with d-tartaric acid solution having ... resulting in the production of crystal nuclei. The interface.
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The crystal structure and twinning of neodymium gallium perovskite single crystals
International Nuclear Information System (INIS)
Ubizskii, S.B.; Vasylechko, L.O.; Savytskii, D.I.; Matkovskii, A.O.; Syvorotka, I.M.
1994-01-01
By means of X-ray structure analysis, the crystal structure of neodymium gallium perovskite (NGP) single crystals (NdGaO 3 ) being used as a substrate for HTSC film epitaxy has been refined and the position of atoms has been determined. The possibility of YBa 2 Cu 3 O 7-x film epitaxy on the plane (110) of NGP crystal as well as its advantages and pitfalls are analysed from structural data. The twinning types in the NGP crystal were established. The twinning structure of NGP substrates is found to be stable up to a temperature of 1173 K, as differentiated from the LaGaO 3 and LaAlO 3 substrates. It is intimated that the twinning in the NGP substrates oriented as (001) can result in creation of 90 degrees twin bonds in a film, and in the case of (110)-oriented plates it is possible to ignore the twinning presence in substrate completely. (author)
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Production and mechanical properties of sintered carbides (hard steels WC-Co)
International Nuclear Information System (INIS)
Batalha, G.F.
1987-09-01
Densification and mechanical characteristics or WC-Co Cemented Carbides, were investigated by dilatometry, Hardness and bending tests, as a function of the two principal micro-structural parameters: the cobalt content and the particle size of carbide crystals. Vickers hardness of the studied compositions showed a linear variation with the increase of the cobalt content. By three point bending, the transverse rupture strenght increases with cobalt content, however, for larger grain size reaches a maximum, eventually reduced by brittle phases and incomplete dispersion. The results of brittle facture tests were statistically analised and fitted better to the 'Weakest Link Model' (Weibull distribution) than the 'Chain Model' (Gaussian distribution). (author) [pt
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Types of defect ordering in undoped and lanthanum-doped Bi2201 single crystals
International Nuclear Information System (INIS)
Martovitsky, V. P.
2006-01-01
Undoped and lanthanum-doped Bi2201 single crystals having a perfect average structure have been comparatively studied by x-ray diffraction. The undoped Bi2201 single crystals exhibit very narrow satellite reflections; their half-width is five to six times smaller than that of Bi2212 single crystals grown by the same technique. This narrowness indicates three-dimensional defect ordering in the former crystals. The lanthanumdoped Bi2201 single crystals with x = 0.7 and T c = 8-10 K exhibit very broad satellite reflections consisting of two systems (modulations) misoriented with respect to each other. The modulation-vector components of these two modulations are found to be q 1 = 0.237b* + 0.277c* and q 2 = 0.238b* + 0.037c*. The single crystals having a perfect average structure and a homogeneous average distribution of doping lanthanum consist of 70-to 80-A-thick layers that alternate along the c axis and have two different types of modulated superlattice. The crystals having a less perfect average structure also consist of alternating layers, but they have different lanthanum concentrations. The low value of T c in the undoped Bi2201 single crystals (9.5 K) correlates with three-dimensional defect ordering in them, and an increase in T c to 33 K upon lanthanum doping can be related to a thin-layer structure of these crystals and to partial substitution of lanthanum for the bismuth positions
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Disappearing Enantiomorphs: Single Handedness in Racemate Crystals.
Parschau, Manfred; Ernst, Karl-Heinz
2015-11-23
Although crystallization is the most important method for the separation of enantiomers of chiral molecules in the chemical industry, the chiral recognition involved in this process is poorly understood at the molecular level. We report on the initial steps in the formation of layered racemate crystals from a racemic mixture, as observed by STM at submolecular resolution. Grown on a copper single-crystal surface, the chiral hydrocarbon heptahelicene formed chiral racemic lattice structures within the first layer. In the second layer, enantiomerically pure domains were observed, underneath which the first layer contained exclusively the other enantiomer. Hence, the system changed from a 2D racemate into a 3D racemate with enantiomerically pure layers after exceeding monolayer-saturation coverage. A chiral bias in form of a small enantiomeric excess suppressed the crystallization of one double-layer enantiomorph so that the pure minor enantiomer crystallized only in the second layer. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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Corrosion resistant cemented carbide
International Nuclear Information System (INIS)
Hong, J.
1990-01-01
This paper describes a corrosion resistant cemented carbide composite. It comprises: a granular tungsten carbide phase, a semi-continuous solid solution carbide phase extending closely adjacent at least a portion of the grains of tungsten carbide for enhancing corrosion resistance, and a substantially continuous metal binder phase. The cemented carbide composite consisting essentially of an effective amount of an anti-corrosion additive, from about 4 to about 16 percent by weight metal binder phase, and with the remaining portion being from about 84 to about 96 percent by weight metal carbide wherein the metal carbide consists essentially of from about 4 to about 30 percent by weight of a transition metal carbide or mixtures thereof selected from Group IVB and of the Periodic Table of Elements and from about 70 to about 96 percent tungsten carbide. The metal binder phase consists essentially of nickel and from about 10 to about 25 percent by weight chromium, the effective amount of an anti-corrosion additive being selected from the group consisting essentially of copper, silver, tine and combinations thereof
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Czech Academy of Sciences Publication Activity Database
Molnar, P.; Šittner, P.; Novák, V.; Lukáš, Petr
2008-01-01
Roč. 481, Sp.Iss.SI (2008), s. 513-517 ISSN 0921-5093 R&D Projects: GA AV ČR IAA100480704 Institutional research plan: CEZ:AV0Z10480505 Keywords : Cu-Al-Ni * single crystals * neutron diffraction Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 1.806, year: 2008
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Electronic transport properties of single crystal thallium-2201 superconductors
International Nuclear Information System (INIS)
Yandrofski, R.M.
1992-01-01
Four-probe resistance measurements on single crystals of the calcium-free thallium-based superconducting Tl 2 Ba 2 CuO 6+σ phase (Tl-2201) were performed in magnetic fields up to 12 Telsa. Single crystals of sizes were grown by a self-flux technique and were characterized by single crystal X-ray diffraction and X-ray Dispersive Analysis. Field measurements were taken at dc and at low frequencies using a lock-in technique. Techniques were developed to oxygen-anneal the as-grown single crystals to generate single crystal samples of the same Tl-2201 phase with varying transition interaction effect against appropriate composite general alternatives are developed for the standard two-way layout with a single observation per cell. Nonparametric aligned-rank test procedures are introduced. One of the new procedures is shown to be equivalent to a slight modification of the previously studied Latin square procedures when the factors have the same number of levels. The equal in distribution technique is used to show that any statistic based on the joint ranks should not be used to test the hypotheses of interest. The tests based on aligning with the averages do not depend on the nuisance main effects, while those based on aligning with the median do depend on the nuisance main effects. The relative power performance of the competing tests are examined via Monte Carlo simulation. Power studies conducted on the 5 x 5, 5 x 6, and 5 x 9 two-way layouts with one observation per cell show that the new procedures based on a comparison of all possible pairs of rank-profiles perform quite well for two types of product interaction, a general class of interaction effects proposed by Martin, and several sets of specific interaction effects. Approximate critical values for some of the proposed procedures are explored in the special case when the main effect parameters for one factor are known
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BiI{sub 3} single crystal for room-temperature gamma ray detectors
Energy Technology Data Exchange (ETDEWEB)
Saito, T., E-mail: saito.tatsuya125@canon.co.jp [Frontier Research Center, Canon Inc., 3-30-2, Shimomaruko, Ohta-ku, Tokyo 146-8501 (Japan); Iwasaki, T. [Frontier Research Center, Canon Inc., 3-30-2, Shimomaruko, Ohta-ku, Tokyo 146-8501 (Japan); Kurosawa, S.; Yoshikawa, A. [Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); New Industry Creation Hatchery Center (NICHe), Tohoku University, 6-6-10 Aoba, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579 (Japan); Den, T. [Frontier Research Center, Canon Inc., 3-30-2, Shimomaruko, Ohta-ku, Tokyo 146-8501 (Japan)
2016-01-11
BiI{sub 3} single crystals were grown by the physical vapor transport method. The repeated sublimation of the starting material reduced impurities in the BiI{sub 3} single crystal to sub-ppm levels. The detector was fabricated by depositing Au electrodes on both surfaces of the 100-μm-thick BiI{sub 3} single crystal platelet. The resistivity of the BiI{sub 3} single crystal was increased by post-annealing in an iodine atmosphere (ρ=1.6×10{sup 11} Ω cm). Pulse height spectroscopy measurements showed clear peaks in the energy spectrum of alpha particles or gamma rays. It was estimated that the mobility-lifetime product was μ{sub e}τ{sub e}=3.4–8.5×10{sup −6} cm{sup 2}/V and the electron–hole pair creation energy was 5.8 eV. Our results show that BiI{sub 3} single crystals are promising candidates for detectors used in radiographic imaging or gamma ray spectroscopy.
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Bloch walls in a nickel single crystal
International Nuclear Information System (INIS)
Peters, J.; Treimer, W.
2001-01-01
We present a consistent theory for the dependence of the magnetic structure in bulk samples on external static magnetic fields and corresponding experimental results. We applied the theory of micromagnetism to this crystal and calculated the Bloch wall thickness as a function of external magnetic fields. The theoretical results agree well with the experimental data, so that the Bloch wall thickness of a 71 deg. nickel single crystal was definitely determined with some hundred of nanometer
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Thermopower, electrical and Hall conductivity of undoped and doped iron disilicide single crystals
Energy Technology Data Exchange (ETDEWEB)
Heinrich, A; Behr, G; Griessmann, H; Teichert, S; Lange, H
1997-07-01
The electrical transport properties of {beta}-FeSi{sub 2} single crystals have been investigated in dependence on the purity of the source material and on doping with 3d transition metals. The transport properties included are electrical conductivity, Hall conductivity and thermopower mainly in the temperature range from 4K to 300K. The single crystals have been prepared by chemical transport reaction in a closed system with iodine as transport agent. In undoped single crystals prepared with 5N Fe both electrical conductivity and thermopower depend on the composition within the homogeneity range of {beta}-FeSi{sub 2} which is explained by different intrinsic defects at the Si-rich and Fe-rich phase boundaries. In both undoped and doped single crystals impurity band conduction is observed at low temperatures but above 100K extrinsic behavior determined by shallow impurity states. The thermopower shows between 100K and 200K a significant phonon drag contribution which depends on intrinsic defects and additional doping. The Hall resistivity is considered mainly with respect to an anomalous contribution found in p-type and n-type single crystals and thin films. In addition doped single crystals show at temperatures below about 130K an hysteresis of the Hall voltage. These results make former mobility data uncertain. Comparison will be made between the transport properties of single crystals and polycrystalline material.
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Growth and characterization of isotopically enriched 70Ge and 74Ge single crystals
International Nuclear Information System (INIS)
Itoh, K.
1992-10-01
Isotopically enriched 70 Ge and 74 Ge single crystals were successfully gown by a newly developed vertical Bridgman method. The system allows us to reliably grow high purity Ge single crystals of approximately 1 cm 3 volume. To our knowledge, we have grown the first 70 Ge single crystal. The electrically active chemical impurity concentration for both crystals was found to be ∼2 x cm -3 which is two order of magnitude better that of 74 Ge crystals previously grown by two different groups. Isotopic enrichment of the 70 Ge and the 74 Ge crystals is 96.3% and 96.8%, respectively. The residual chemical impurities present in both crystals were identified as phosphorus, copper, aluminum, and indium. A wide variety of experiments which take advantage of the isotopic purity of our crystals are discussed
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Self-cavity lasing in optically pumped single crystals of p-sexiphenyl
International Nuclear Information System (INIS)
Yanagi, Hisao; Tamura, Kenji; Sasaki, Fumio
2016-01-01
Organic single-crystal self-cavities are prepared by solution growth of p-sexiphenyl (p-6P). Based on Fabry-Pérot feedback inside a quasi-lozenge-shaped platelet crystal, edge-emitting laser is obtained under optical pumping. The multimode lasing band appears at the 0-1 or 0-2 vibronic progressions depending on the excitation conditions which affect the self-absorption effect. Cavity-size dependence of amplified spontaneous emission (ASE) is investigated with laser-etched single crystals of p-6P. As the cavity length of square-shaped crystal is reduced from 100 to 10 μm, ASE threshold fluence is decreased probably due to size-dependent light confinement in the crystal cavity.
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Energy Technology Data Exchange (ETDEWEB)
Silva, F.T. da; Nunes, M.A.M. [Universidade Federal do Rio Grande do Norte (PPGCEM/UFRN), Natal (Brazil). Programa de Pos-Graduacao em Ciencia e Engenharia de Materiais; Oliveira, R.M.V. de; Silva, G.G. da [Instituto Federal do Rio Grande do Norte (IFRN), Natal (Brazil); Souza, C.P. de; Gomes, U.U. [Universidade Federal do Rio Grande do Norte (UFRN), Natal (Brazil)
2010-07-01
The tungsten carbide (WC) has wide application due to its properties like high melting point, high hardness, wear resistance, oxidation resistance and good electrical conductivity. The microstructural characteristics of the starting powders influences the final properties of the carbide. In this context, the use of nanoparticle powders is an efficient way to improve the final properties of the WC. The high energy milling stands out from other processes to obtain nanometric powders due to constant microstructural changes caused by this process. Therefore, the objective is to undertake an analysis of microstructural characteristics on the crystallite size and microdeformations of the crystal lattice using the technique of X-ray diffraction (XRD) using the Rietveld refinement. The results show an efficiency of the milling process to reduce the crystallite size, leading to a significant deformation in the crystal lattice of WC from 5h milling. (author)
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Ferromagnetism in CVT grown tungsten diselenide single crystals with nickel doping
Habib, Muhammad; Muhammad, Zahir; Khan, Rashid; Wu, Chuanqiang; Rehman, Zia ur; Zhou, Yu; Liu, Hengjie; Song, Li
2018-03-01
Two dimensional (2D) single crystal layered transition materials have had extensive consideration owing to their interesting magnetic properties, originating from their lattices and strong spin-orbit coupling, which make them of vital importance for spintronic applications. Herein, we present synthesis of a highly crystalline tungsten diselenide layered single crystal grown by chemical vapor transport technique and doped with nickel (Ni) to tailor its magnetic properties. The pristine WSe2 single crystal and Ni-doped crystal were characterized and analyzed for magnetic properties using both experimental and computational aspects. It was found that the magnetic behavior of the 2D layered WSe2 crystal changed from diamagnetic to ferromagnetic after Ni-doping at all tested temperatures. Moreover, first principle density functional theory (DFT) calculations further confirmed the origin of room temperature ferromagnetism of Ni-doped WSe2, where the d-orbitals of the doped Ni atom promoted the spin moment and thus largely contributed to the magnetism change in the 2D layered material.
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Self-Aligned Growth of Organic Semiconductor Single Crystals by Electric Field.
Kotsuki, Kenji; Obata, Seiji; Saiki, Koichiro
2016-01-19
We proposed a novel but facile method for growing organic semiconductor single-crystals via solvent vapor annealing (SVA) under electric field. In the conventional SVA growth process, nuclei of crystals appeared anywhere on the substrate and their crystallographic axes were randomly distributed. We applied electric field during the SVA growth of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) on the SiO2/Si substrate on which a pair of electrodes had been deposited beforehand. Real-time observation of the SVA process revealed that rodlike single crystals grew with their long axes parallel to the electric field and bridged the prepatterned electrodes. As a result, C8-BTBT crystals automatically formed a field effect transistor (FET) structure and the mobility reached 1.9 cm(2)/(V s). Electric-field-assisted SVA proved a promising method for constructing high-mobility single-crystal FETs at the desired position by a low-cost solution process.
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Single Crystals of Organolead Halide Perovskites: Growth, Characterization, and Applications
Peng, Wei
2017-01-01
Despite their outstanding charge transport characteristics, organolead halide perovskite single crystals grown by hitherto reported crystallization methods are not suitable for most optoelectronic devices due to their small aspect ratios
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Energy Technology Data Exchange (ETDEWEB)
Ulbrich, Gregor
2015-07-23
In this work it could be shown that Skull-Melting is a suitable method for growing ceria single crystals. Twenty different ceria-based single crystals could be manufactured. It was possible to dope ceria single crystals with Gd, Sm, Y, Zr, Ti, Ta, and Pr in different concentrations. Also co-doping with the named metals was realized. However, there remain some problems for growing ceria-based single crystals by Skull-Melting. As ignition metal zirconium was used because no ceria-based material works well. For that reason all single crystals show small zirconium contamination. Another problem is the formation of oxygen by the heat-induced reduction of ceria during the melting process. Because of that the skull of sintered material is often destroyed by gas pressure. This problem had to be solved individually for every single crystal. The obtained single crystals were characterized using different methods. To ensure the single crystal character the y were examined by Laue diffraction. All manufactured crystals are single crystals. Also powder diffraction patterns of the milled and oxidized samples were measured. For the determination of symmetry and metric the structural parameters were analyzed by the Rietveld method. All synthesized materials crystallize in space group Fm-3m known from calcium fluoride. The cubic lattice parameter a was determined for all crystals. In the case of series with different cerium and zirconium concentrations a linear correlation between cerium content and cubic lattice parameter was detected. The elemental composition was determined by WDX. All crystals show a homogeneous elemental distribution. The oxygen content was calculated because the WDX method isn't useful for determination.
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Growth and characterization of air annealing Mn-doped YAG:Ce single crystal for LED
International Nuclear Information System (INIS)
Xiang, Weidong; Zhong, Jiasong; Zhao, Yinsheng; Zhao, Binyu; Liang, Xiaojuan; Dong, Yongjun; Zhang, Zhimin; Chen, Zhaoping; Liu, Bingfeng
2012-01-01
Highlights: ► The YAG:Ce,Mn single crystal was well synthesized by the Czochralski (CZ) method. ► The emission intensity of the sample has been influenced after annealing. ► Annealed in the air at 1200 °C was the most optimal annealing condition. ► The single crystal could be used in the white light LED which emitted by blue light. - Abstract: The growth of Mn-doped YAG:Ce (yttrium aluminum garnet doped cerium) single crystal by the Czochralski (CZ) method and the characterization of its spectroscopy and color-electric parameters are presented. The absorption spectra indicate that the crystal absorbed highly in the 300–500 nm wavelength range. The emission spectrum of the crystal consists of a peak around 538 nm when excited by 460 nm blue light, which prove the YAG:Ce,Mn single crystal could be used in the white light emitting doides (LED). The different charges of Mn ions have different luminescence properties, and the air annealing process for the single crystal would change the concentration of Mn ions with different charges, which could influence the emission intensity of the single crystal.
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Growth of methyl 2-(2,4-dinitrophenyl)aminopropanoate single crystals
Perigaud, A.; Nicolau, Y. F.
1986-12-01
Methyl 2-(2,4-dinitrophenyl)aminopropanoate single crystals, 1 cm in diameter and 7 cm in length have been grown by a travelling-heater-Bridgman method in polyethylene tubes introduced into glass ampoules, at a growth rate of 1.5-6 mm/day. The starting material was synthesised and purified by recrystallization from methanol and by vacuum evaporation to a purity of 99.994%. The period of growth, and hence the length of the crystal, is limited due to melt decomposition and polycondensation. The b-axis of the crystals is always oriented at about 72° to the ampoule axis. Good quality single crystals have been obtained giving a FWHM of the Cu Kα (040) rocking curve of about 1'.
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Annealing effect on superconductivity of La2CuO4 single crystals
International Nuclear Information System (INIS)
Tanaka, I.; Takahashi, H.; Kojima, H.
1992-01-01
This paper reports that La 2 CuO 4 single crystals grown at an oxygen pressure of 0.2 MPa by TSFZ method are superconducting below 32 K, and show a semiconducting behavior in nonsuperconducting state. The single crystals of La 2 CuO 4 are changed from superconductors to semiconductors by annealing in argon, and are returned to superconductors by annealing at ambient pressure of oxygen. Therefore, superconductivity of the La 2 CuO 4 single crystals is due to excess oxygen
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Annealing effect on superconductivity of La2CuO4 single crystals
International Nuclear Information System (INIS)
Tanaka, L.; Takahashi, H.; Kojima, H.
1992-01-01
La 2 CuO 4 single crystals grown at an oxygen pressure of 0.2 MPa by TSFZ method are superconducting below 32 K, and show a semiconducting behavior in nonsuperconducting state. The single crystals of La 2 CuO 4 are changed from superconductors to semiconductors by annealing in argon, and are returned to superconductors by annealing at ambient pressure of oxygen. Therefore, superconductivity of the La 2 CuO 4 single crystals is due to excess oxygen. (orig.)
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Hopping conduction in gamma-irradiated InSe and InSe:Sn single crystals
International Nuclear Information System (INIS)
MUSTAFAEVA, S.N.; ISMAILOV, A.A.; ASADOV, M.M.
2010-01-01
Full text : The semiconductive InSe layer compound is characterized by a strong covalent bond inside the layers and a weak Van der Waals bonding between them. It was shown that across the layers of InSe single crystals at low temperatures (T ≤ 200 K) at direct current (dc) hopping conduction through localized states near the Fermi level takes place. The results of dc-conductivity of gamma-irradiated p-InSe and n-InSe : Sn layer single crystals have been presented in this work. ρ-InSe single crystal specimens grown by the Bridgman method were used in the experiments. Plates of the crystals under study were obtained by cleaving along the layers of single crystal ingots. The single-crystal InSe samples for electric measurements had the form of planar capacitors normal to the C axis of the crystals, with silver-paste electrodes. The thickness of the InSe samples was 300 mkm. Co 60 serves as the source of irradiation with energy of gamma-quantum equal to 1.3 MeV. The electric properties of non-irradiated and gamma-irradiated InSe crystals were measured under the same conditions. It is revealed that InSe and InSe : Sn (0.2 and 0.4 mole percent Sn) single crystals exhibit a variable range hopping conduction along a normal to their natural layers at temperatures T≤200 K in a dc electric field. From experimental data the parameters of localized states of p-InSe and n-InSe : Sn were calculated before and after gamma-irradiation. It is revealed that gamma-irradiation of p-InSe and n-InSe : Sn (0.2 and 0.4 mole percent Sn) single crystals leads to significant change of localized states parameters. After gamma-irradiation the density of states near the Fermi level increased, but their energy spread and the average jump distance decreased. The concentrations of radiated defects were estimated in p-InSe (5.18*10 1 7 sm - 3) and n-InSe : Sn (2.5*10 1 7 - 2.7*10 1 8 sm - 3) single crystals. The present results demonstrate that gamma-irradiation offers the possibility of tuning
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Trapezoidal diffraction grating beam splitters in single crystal diamond
Kiss, Marcell; Graziosi, Teodoro; Quack, Niels
2018-02-01
Single Crystal Diamond has been recognized as a prime material for optical components in high power applications due to low absorption and high thermal conductivity. However, diamond microstructuring remains challenging. Here, we report on the fabrication and characterization of optical diffraction gratings exhibiting a symmetric trapezoidal profile etched into a single crystal diamond substrate. The optimized grating geometry diffracts the transmitted optical power into precisely defined proportions, performing as an effective beam splitter. We fabricate our gratings in commercially available single crystal CVD diamond plates (2.6mm x 2.6mm x 0.3mm). Using a sputter deposited hard mask and patterning by contact lithography, the diamond is etched in an inductively coupled oxygen plasma with zero platen power. The etch process effectively reveals the characteristic {111} diamond crystal planes, creating a precisely defined angled (54.7°) profile. SEM and AFM measurements of the fabricated gratings evidence the trapezoidal shape with a pitch of 3.82μm, depth of 170 nm and duty cycle of 35.5%. Optical characterization is performed in transmission using a 650nm laser source perpendicular to the sample. The recorded transmitted optical power as function of detector rotation angle shows a distribution of 21.1% in the 0th order and 23.6% in each +/-1st order (16.1% reflected, 16.6% in higher orders). To our knowledge, this is the first demonstration of diffraction gratings with trapezoidal profile in single crystal diamond. The fabrication process will enable beam splitter gratings of custom defined optical power distribution profiles, while antireflection coatings can increase the efficiency.
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Young's Modulus of Single-Crystal Fullerene C Nanotubes
Directory of Open Access Journals (Sweden)
Tokushi Kizuka
2012-01-01
Full Text Available We performed bending tests on single-crystal nanotubes composed of fullerene C70 molecules by in situ transmission electron microscopy with measurements of loading forces by an optical deflection method. The nanotubes with the outer diameters of 270–470 nm were bent using simple-beam and cantilever-beam loading by the piezomanipulation of silicon nanotips. Young's modulus of the nanotubes increased from 61 GPa to 110 GPa as the outer diameter decreased from 470 nm to 270 nm. Young's modulus was estimated to be 66% of that of single-crystal C60 nanotubes of the same outer diameter.
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Growth and characterization of 2-Methylimidazolium D-tartrate single crystal
Srinivasan, T. P.; Anandhi, S.; Gopalakrishnan, R.
2011-03-01
Single crystal of 2-Methylimidazolium D-tartrate (2MImdT; C8N2O6H12) has been grown by slow evaporation solution growth technique at room temperature using mixed solvents of ethanol and deionized water. Single crystal X-ray diffraction study confirms that 2-Methylimidazolium D-tartrate belongs to monoclinic crystal system with non-centrosymmetric space group P21. The Fourier transform infrared spectrum of 2-Methylimidazolium D-tartrate reveals the presence of methyl and carboxyl functional groups in the compound. The mechanical properties of 2MImdT crystal were studied. The theoretical factor group analysis predicts 168 optical modes in the title compound. The dielectric behavior of 2MImdT crystals was studied at different frequencies and temperatures. Decomposition and melting point of 2MImdT were found using thermal measurements. SHG behavior of the title compound was demonstrated using Q-switched Nd:YAG laser.
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Priyadharshini, A.; Kalainathan, S.
2018-04-01
2-(4-fluorobenzylidene) malononitrile (FBM), an organic third order nonlinear (TONLO) single crystal with the dimensions of 32 × 7 × 11 mm3, has been successfully grown in acetone solution by slow evaporation technique at 35 °C. The crystal system (triclinic), space group (P-1) and crystalline purity of the titular crystal were measured by single crystal and powder X-ray diffraction, respectively. The molecular weight and the multiple functional groups of the FBM material were confirmed through the mass and FT-IR spectral analysis. UV-Vis-NIR spectral study enroles that the FBM crystal exhibits excellent transparency (83%) in the entire visible and near infra-red region with a wide bandgap 2.90 eV. The low dielectric constant (εr) value of FBM crystal is appreciable for microelectronics industry applications. Thermal stability and melting point (130.09 °C) were ascertained by TGA-DSC analysis. The laser-induced surface damage threshold (LDT) value of FBM specimen is found to be 2.14 GW/cm2, it is fairly good compared to other reported NLO crystals. The third - order nonlinear optical character of the FBM crystal was confirmed through the typical single beam Z-scan technique. All these finding authorized that the organic crystal of FBM is favorably suitable for NLO applications.
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Annealing effect of H+ -implanted single crystal silicon on strain and crystal structure
International Nuclear Information System (INIS)
Duo Xinzhong; Liu Weili; Zhang Miao; Gao Jianxia; Fu Xiaorong; Lin Chenglu
2000-01-01
The work focuses on the rocking curves of H + -implanted single silicon crystal detected by Four-Crystal X-ray diffractometer. The samples were annealed under different temperatures. Lattice defect in H + -implanted silicon crystals was detected by Rutherford Backscattering Spectrometry. It appeared that H-related complex did not crush until annealing temperature reached about 400 degree C. At that temperature H 2 was formed, deflated in silicon lattice and strained the lattice. But defects did not come into being in large quantity. The lattice was undamaged. When annealing temperature reached 500 degree C, strain induced by H 2 deflation crashed the silicon lattice. A large number of defects were formed. At the same time bubbles in the crystal and blister/flaking on the surface could be observed
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Karthigha, S.; Krishnamoorthi, C.
2018-03-01
An organic quinolinium derivative nonlinear optical (NLO) crystal, 1-ethyl-2-[2-(4-nitro-phenyl)-vinyl]-quinolinium iodide (PNQI) was synthesized and successfully grown by slow evaporation solution growth technique. Formation of a crystalline compound was confirmed by single crystal X-ray diffraction. The quinolinium compound PNQI crystallizes in the triclinic crystal system with a centrosymmetric space group of P-1 symmetry. The molecular structure of PNQI was confirmed by 1H NMR and 13C NMR spectral studies. The thermal properties of the crystal have been investigated by thermogravimetric (TG) and differential scanning calorimetry (DSC) studies. The optical characteristics obtained from UV-Vis-NIR spectral data were described and the cut-off wavelength observed at 506 nm. The etching study was performed to analyse the growth features of PNQI single crystal. The third order NLO properties such as nonlinear refractive index (n2), nonlinear absorption coefficient (β) and nonlinear susceptibility (χ (3)) of the crystal were investigated using Z-scan technique at 632.8 nm of Hesbnd Ne laser.
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Metal Immiscibility Route to Synthesis of Ultrathin Carbides, Borides, and Nitrides.
Wang, Zixing; Kochat, Vidya; Pandey, Prafull; Kashyap, Sanjay; Chattopadhyay, Soham; Samanta, Atanu; Sarkar, Suman; Manimunda, Praveena; Zhang, Xiang; Asif, Syed; Singh, Abhisek K; Chattopadhyay, Kamanio; Tiwary, Chandra Sekhar; Ajayan, Pulickel M
2017-08-01
Ultrathin ceramic coatings are of high interest as protective coatings from aviation to biomedical applications. Here, a generic approach of making scalable ultrathin transition metal-carbide/boride/nitride using immiscibility of two metals is demonstrated. Ultrathin tantalum carbide, nitride, and boride are grown using chemical vapor deposition by heating a tantalum-copper bilayer with corresponding precursor (C 2 H 2 , B powder, and NH 3 ). The ultrathin crystals are found on the copper surface (opposite of the metal-metal junction). A detailed microscopy analysis followed by density functional theory based calculation demonstrates the migration mechanism, where Ta atoms prefer to stay in clusters in the Cu matrix. These ultrathin materials have good interface attachment with Cu, improving the scratch resistance and oxidation resistance of Cu. This metal-metal immiscibility system can be extended to other metals to synthesize metal carbide, boride, and nitride coatings. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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Steady-state crack growth in single crystals under Mode I loading
DEFF Research Database (Denmark)
Juul, Kristian Jørgensen; Nielsen, Kim Lau; Niordson, Christian Frithiof
2017-01-01
The active plastic zone that surrounds the tip of a sharp crack growing under plane strain Mode I loading conditions at a constant velocity in a single crystal is studied. Both the characteristics of the plastic zone and its effect on the macroscopic toughness is investigated in terms of crack tip...... that the largest shielding effect develops in HCP crystals, while the lowest shielding exists for FCC crystals. Rate-sensitivity is found to affect the plastic zone size, but the characteristics overall remain similar for each individual crystal structure. An increasing rate-sensitivity at low crack velocities...... shielding due to plasticity (quantified by employing the Suo, Shih, and Varias set-up). Three single crystals (FCC, BCC, HCP) are modelled in a steady-state elastic visco-plastic framework, with emphasis on the influence of rate-sensitivity and crystal structures. Distinct velocity discontinuities...
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Colour centre-free perovskite single crystals
International Nuclear Information System (INIS)
Petit, Pierre-Olivier; Petit, Johan; Goldner, Philippe; Viana, Bruno
2009-01-01
Yb 3+ :YAlO 3 (YAP) and Yb 3+ :GdAlO 3 (GAP) are interesting 1 μm high-power laser media thanks to their very good thermo-mechanical properties. However, as-grown perovskite single crystals exhibit colour centres. Parasitic thermal load generated by these centres is deleterious for high-power laser action and can lead to crystal damages. Moreover these defects decrease Yb 3+ lifetime. They are related to trapped holes on the oxygen network. In the present work, several schemes to remove colour centres are presented. Attention is focused on cerium codoping, thermal annealing under reducing atmosphere and growth of non-stoechiometric compounds.
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Radiation effects in corundum single crystals
International Nuclear Information System (INIS)
Gevorkyan, V.A.; Harutunyan, V.V.; Hakhverdyan, E.A.
2005-01-01
On the basis of new experimental results and analysis of publications it is shown that in the lattice of corundum crystals the high-energy particles create stable structural defects due to knocking out of atoms from normal sites of the anionic sublattice; this leads to the formation of F and F '+ centers as well as to other complex [Al i '+ F] type color centers. The essence of 'radiation memory' effect in corundum single crystals is that the high-energy particles irradiation, annealing at high temperatures and additional irradiation by X-rays result in the restoration of some spectral bands of the optical absorption in the range 200-650 nm
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Synthesis and structural characterization of bulk Sb2Te3 single crystal
Sultana, Rabia; Gahtori, Bhasker; Meena, R. S.; Awana, V. P. S.
2018-05-01
We report the growth and characterization of bulk Sb2Te3 single crystal synthesized by the self flux method via solid state reaction route from high temperature melt (850˚C) and slow cooling (2˚C/hour) of constituent elements. The single crystal X-ray diffraction pattern showed the 00l alignment and the high crystalline nature of the resultant sample. The rietveld fitted room temperature powder XRD revealed the phase purity and rhombohedral structure of the synthesized crystal. The formation and analysis of unit cell structure further verified the rhombohedral structure composed of three quintuple layers stacked one over the other. The SEM image showed the layered directional growth of the synthesized crystal carried out using the ZEISS-EVOMA-10 scanning electron microscope The electrical resistivity measurement was carried out using the conventional four-probe method on a quantum design Physical Property Measurement System (PPMS). The temperature dependent electrical resistivity plot for studied Sb2Te3 single crystal depicts metallic behaviour in the absence of any applied magnetic field. The synthesis as well as the structural characterization of as grown Sb2Te3 single crystal is reported and discussed in the present letter.
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Crystal-field analysis of U3+ ions in K2LaX5 (X=Cl, Br or I) single crystals
Karbowiak, M.; Edelstein, N.; Gajek, Z.; Drożdżyński, J.
1998-11-01
An analysis of low temperature absorption spectra of U3+ ions doped in K2LaX5 (X=Cl, Br or I) single crystals is reported. The energy levels of the U3+ ion in the single crystals were assigned and fitted to a semiempirical Hamiltonian representing the combined atomic and crystal-field interactions at the Cs symmetry site. An analysis of the nephelauxetic effect and crystal-field splittings in the series of compounds is also reported.
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Encapsulation of nanoparticles into single-crystal ZnO nanorods and microrods.
Liu, Jinzhang; Notarianni, Marco; Rintoul, Llew; Motta, Nunzio
2014-01-01
One-dimensional single crystal incorporating functional nanoparticles of other materials could be an interesting platform for various applications. We studied the encapsulation of nanoparticles into single-crystal ZnO nanorods by exploiting the crystal growth of ZnO in aqueous solution. Two types of nanodiamonds with mean diameters of 10 nm and 40 nm, respectively, and polymer nanobeads with size of 200 nm have been used to study the encapsulation process. It was found that by regrowing these ZnO nanorods with nanoparticles attached to their surfaces, a full encapsulation of nanoparticles into nanorods can be achieved. We demonstrate that our low-temperature aqueous solution growth of ZnO nanorods do not affect or cause degradation of the nanoparticles of either inorganic or organic materials. This new growth method opens the way to a plethora of applications combining the properties of single crystal host and encapsulated nanoparticles. We perform micro-photoluminescence measurement on a single ZnO nanorod containing luminescent nanodiamonds and the spectrum has a different shape from that of naked nanodiamonds, revealing the cavity effect of ZnO nanorod.
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Method for single crystal growth of photovoltaic perovskite material and devices
Huang, Jinsong; Dong, Qingfeng
2017-11-07
Systems and methods for perovskite single crystal growth include using a low temperature solution process that employs a temperature gradient in a perovskite solution in a container, also including at least one small perovskite single crystal, and a substrate in the solution upon which substrate a perovskite crystal nucleates and grows, in part due to the temperature gradient in the solution and in part due to a temperature gradient in the substrate. For example, a top portion of the substrate external to the solution may be cooled.
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Single-crystal charge transfer interfaces for efficient photonic devices (Conference Presentation)
Alves, Helena; Pinto, Rui M.; Maçôas, Ermelinda M. S.; Baleizão, Carlos; Santos, Isabel C.
2016-09-01
Organic semiconductors have unique optical, mechanical and electronic properties that can be combined with customized chemical functionality. In the crystalline form, determinant features for electronic applications such as molecular purity, the charge mobility or the exciton diffusion length, reveal a superior performance when compared with materials in a more disordered form. Combining crystals of two different conjugated materials as even enable a new 2D electronic system. However, the use of organic single crystals in devices is still limited to a few applications, such as field-effect transistors. In 2013, we presented the first system composed of single-crystal charge transfer interfaces presenting photoconductivity behaviour. The system composed of rubrene and TCNQ has a responsivity reaching 1 A/W, corresponding to an external quantum efficiency of nearly 100%. A similar approach, with a hybrid structure of a PCBM film and rubrene single crystal also presents high responsivity and the possibility to extract excitons generated in acceptor materials. This strategy led to an extended action towards the near IR. By adequate material design and structural organisation of perylediimides, we demonstrate that is possible to improve exciton diffusion efficiency. More recently, we have successfully used the concept of charge transfer interfaces in phototransistors. These results open the possibility of using organic single-crystal interfaces in photonic applications.
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Synthesis and photocatalytic activity of mesoporous – (001) facets TiO_2 single crystals
International Nuclear Information System (INIS)
Dong, Yeshuo; Fei, Xuening; Zhou, Yongzhu
2017-01-01
Highlights: • The (001) facets of TiO_2 single crystals with mesoporous structure. • The (010) and (100) facets of TiO_2 single crystals were covered by the flower – shaped TiO_2 crystals. • This special structure could promote charge separation and provide more active sites, which will lead to a substantial increase in photocatalytic activity. - Abstract: In this work, the mesoporous – (001) facets TiO_2 single crystals have been successfully synthesized through a two-step solvothermal route without any template. Their structure and morphology were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), ultraviolet-visible (UV–vis) diffuse reflectance spectroscopy and energy dispersive X-ray spectrometer (EDX). Based on the different characteristics and atomic arrangements on each facet of anatase TiO_2 single crystals, we synthesized these mesoporous – (001) facets TiO_2 single crystals by controlling the interaction characteristics of hydrofluoric acid (HF) and isopropanol (i-PrOH) on the crystal facets. It can been seen that the (001) facets of these as-synthesized TiO_2 single crystals have a clear mesoporous structure through the SEM images and BET methods. Moreover, the other four facets were covered by the flower – shaped TiO_2 crystals with the generation of the mesoporous – (001) facets. This special and interesting morphology could promote charge separation and provide more active sites, which will lead to a substantial increase in photocatalytic activity. Moreover, it is more intuitive to reflect that the different crystal facets possess the different properties due to their atomic arrangement. Besides, according to the different synthetic routes, we proposed and discussed a plausible synthesis mechanism of these mesoporous – (001) facets TiO_2 single crystals.
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A study on the development of silicon carbide materials for nuclear application
International Nuclear Information System (INIS)
Won, Dong Yeon; Kim, Chan Jung; Lee, Jae Choon; Kim, Joon Hyung; Lim, Kyung Soo; Kim, Ki Baik
1987-12-01
Silicon carbide was synthesized by reaction sintering process from carbon and silicon powders as starting materials. The effects of two processing parameters, i.e., heat treatment time and temperature, were examined (to characterize the reaction sintering process) in terms of the degree of reaction and phase developed during heat treatment. The final products after reaction of silicon and carbon powders were identified as β-SiC having ZnS crystal structure. Sintering of cordierite ceramics which was used as an high temperature inorganic binder to fabricate ceramically bound silicon carbide, and phase identification of the sintered ceramics by X-ray powder diffraction techniques. (Author)
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Neutron transmission of single-crystal sapphire filters
International Nuclear Information System (INIS)
Adib, M.; Kilany, M.; Habib, N.; Fathallah, M.
2004-01-01
A simple additive formula is given that permits the calculation of the nuclear capture, thermal diffuse and Bragg scattering cross-sections as a function of sapphire temperature and crystal parameters. We have developed a computer program that allows calculations of the thermal neutron transmission for the sapphire rhombohedral structure and its equivalent trigonal structure. The calculated total cross-section values and effective attenuation coefficient for mono-crystalline sapphire at different temperatures are compared with measured values. Overall agreement is indicated between the formula fits and experimental data. We discuss the use of sapphire single-crystal as a thermal neutron filter in terms of the optimum crystal thickness, mosaic spread, temperature, cutting plane and tuning for efficient transmission of thermal-reactor neutrons
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Muonium states in silicon carbide
International Nuclear Information System (INIS)
Patterson, B.D.; Baumeler, H.; Keller, H.; Kiefl, R.F.; Kuendig, W.; Odermatt, W.; Schneider, J.W.; Estle, T.L.; Spencer, D.P.; Savic, I.M.
1986-01-01
Implanted muons in samples of silicon carbide have been observed to form paramagnetic muonium centers (μ + e - ). Muonium precession signals in low applied magnetic fields have been observed at 22 K in a granular sample of cubic β-SiC, however it was not possible to determine the hyperfine frequency. In a signal crystal sample of hexagonal 6H-SiC, three apparently isotropic muonium states were observed at 20 K and two at 300 K, all with hyperfine frequencies intermediate between those of the isotropic muonium centers in diamond and silicon. No evidence was seen of an anisotropic muonium state analogous to the Mu * state in diamond and silicon. (orig.)
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Preparation of hafnium carbide by chemical vapor deposition
International Nuclear Information System (INIS)
Hertz, Dominique.
1974-01-01
Hard, adhesive coatings of single-phase hafnium carbide were obtained by chemical vapor reaction in an atmosphere containing hafnium tetrachloride, methane and a large excess of hydrogen. By varying the gas phase composition and temperature the zones of formation of the different solid phases were studied and the growth of elementary hafnium and carbon deposits evaluated separately. The results show that the mechanism of hafnium carbide deposition does not hardly involve phenomene of homogeneous-phase methane decomposition or tetrachloride reduction by hydrogen unless the atmosphere is very rich or very poor in methane with respect to tetrachloride. However, hydrogen acting inversely on these two reactions, affects the stoichiometry of the substance deposited. The methane decomposition reaction is fairly slow, the reaction leading to hafnium carbide deposition is faster and that of tetrachloride reduction by hydrogen is quite fast [fr
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Microscopic single-crystal refractometry as a function of wavelength
International Nuclear Information System (INIS)
DeLoach, L.D.
1994-01-01
The refractive indices of crystal fragments 50--200 μm in size can be measured for light wavelengths between 365 and 1100 nm with a spindle-stage refractometer. Established methods from optical crystallograpy are used to orient a crystal on the microscope spindle stage and then to match its refractive index to an immersion fluid. The refractive index of the fluid for the wavelength of light and matching temperature is determined by comparison of a reference crystal on a second spindle axis with the fluid under the match conditions. Investigations of new nonlinear-optical crystals admirably demonstrate the advantages of measuring the refractive index to ± 0.0004 in small single crystals
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AFM studies on heavy ion irradiated YBCO single crystals
International Nuclear Information System (INIS)
Lakhani, Archana; Marhas, M.K.; Saravanan, P.; Ganesan, V.; Srinivasan, R.; Kanjilal, D.; Mehta, G.K.; Elizabeth, Suja; Bhat, H.L.
2000-01-01
Atomic Force Microscopy (AFM) is extensively used to characterise the surface morphology of high energy ion irradiated single crystals of high temperature superconductor - YBCO. Our earlier systematic studies on thin films of YBCO under high energy and heavy ion irradiation shows clear evidence of ion induced sputtering or erosion, even though the effect is more on the grain boundaries. These earlier results were supported by electrical resistance measurements. In order to understand more clearly, the nature of surface modification at these high energies, AFM studies were carried out on single crystals of YBCO. Single crystals were chosen in order to see the effect on crystallites alone without interference from grain boundaries. 200 MeV gold ions were used for investigation using the facilities available at Nuclear Science Centre, New Delhi. The type of ion and the range of energies were chosen to meet the threshold for electronically mediated defect production. The results are in conformity with our earlier studies and will be described in detail in the context of electronic energy loss mediated sputtering or erosion. (author)
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Observation of plastic deformation in freestanding single crystal Au nanowires
International Nuclear Information System (INIS)
Lee, Dongyun; Zhao Manhong; Wei Xiaoding; Chen Xi; Jun, Seong C.; Hone, James; Herbert, Erik G.; Oliver, Warren C.; Kysar, Jeffrey W.
2006-01-01
Freestanding single crystal nanowires of gold were fabricated from a single grain of pure gold leaf by standard lithographic techniques, with center section of 7 μm in length, 250 nm in width, and 100 nm in thickness. The ends remained anchored to a silicon substrate. The specimens were deflected via nanoindenter until plastic deformation was achieved. Nonlocalized and localized plastic deformations were observed. The resulting force-displacement curves were simulated using continuum single crystal plasticity. A set of material parameters which closely reproduce the experimental results suggests that the initial critical resolved shear stress was as high as 135 MPa
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Sun, Enwei; Cao, Wenwu
2014-01-01
In the past decade, domain engineered relaxor-PT ferroelectric single crystals, including (1-x)Pb(Mg1/3Nb2/3)O3-xPbTiO3 (PMN-PT), (1-x)Pb(Zn1/3Nb2/3)O3-xPbTiO3 (PZN-PT) and (1-x-y)Pb(In1/2Nb1/2)O3-yPb(Mg1/3Nb2/3)O3-xPbTiO3 (PIN-PMN-PT), with compositions near the morphotropic phase boundary (MPB) have triggered a revolution in electromechanical devices owing to their giant piezoelectric properties and ultra-high electromechanical coupling factors. Compared to traditional PbZr1-xTixO3 (PZT) ceramics, the piezoelectric coefficient d33 is increased by a factor of 5 and the electromechanical coupling factor k33 is increased from 90%. Many emerging rich physical phenomena, such as charged domain walls, multi-phase coexistence, domain pattern symmetries, etc., have posed challenging fundamental questions for scientists. The superior electromechanical properties of these domain engineered single crystals have prompted the design of a new generation electromechanical devices, including sensors, transducers, actuators and other electromechanical devices, with greatly improved performance. It took less than 7 years from the discovery of larger size PMN-PT single crystals to the commercial production of the high-end ultrasonic imaging probe “PureWave”. The speed of development is unprecedented, and the research collaboration between academia and industrial engineers on this topic is truly intriguing. It is also exciting to see that these relaxor-PT single crystals are being used to replace traditional PZT piezoceramics in many new fields outside of medical imaging. The new ternary PIN-PMN-PT single crystals, particularly the ones with Mn-doping, have laid a solid foundation for innovations in high power acoustic projectors and ultrasonic motors, hinting another revolution in underwater SONARs and miniature actuation devices. This article intends to provide a comprehensive review on the development of relaxor-PT single crystals, spanning material discovery, crystal growth
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Energy Technology Data Exchange (ETDEWEB)
Dhanaraj, P.V. [Centre for Crystal Growth, SSN College of Engineering, Kalavakkam 603 110 (India); Rajesh, N.P., E-mail: rajeshnp@hotmail.com [Centre for Crystal Growth, SSN College of Engineering, Kalavakkam 603 110 (India); Sundar, J. Kalyana; Natarajan, S. [Department of Physics, Madurai Kamaraj University, Madurai 625 021 (India); Vinitha, G. [Department of Physics, Crescent Engineering College, Chennai 600 048 (India)
2011-09-15
Highlights: {yields} Good quality crystals of nicotinium trifluoroacetate in monoclinic system were grown for first time. {yields} Nicotinium trifluoroacetate crystal exhibits third order nonlinear optical properties. {yields} The optical spectrum of nicotinium trifluoroacetate crystal reveals the wide transmission in the entire range with cutoff wavelength at 286 nm. {yields} Nicotinium trifluoroacetate is a low dielectric constant material. - Abstract: An organic material, nicotinium trifluoroacetate (NTF) was synthesized and single crystals in monoclinic system were grown from aqueous solution for the first time. Its solubility and metastable zone width were estimated. The crystal structure of NTF was analyzed to reveal the molecular arrangements and the formation of hydrogen bonds in the crystal. High-resolution X-ray diffraction rocking curve measurements were performed to analyze the structural perfection of the grown crystals. Functional groups in NTF were identified by Fourier transform infrared spectral analysis. Thermal behaviour and stability of NTF were studied by thermogravimetric and differential thermal analysis and differential scanning calorimetry. Mechanical and dielectric properties of NTF crystals were analyzed. Optical studies reveal that NTF crystals are transparent in the wavelength range 286-1100 nm. The third order nonlinear optical parameters of NTF were derived by the Z-scan technique.
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Cross-section of single-crystal materials used as thermal neutron filters
International Nuclear Information System (INIS)
Adib, M.
2005-01-01
Transmission properties of several single crystal materials important for neutron scattering instrumentation are presented. A computer codes are developed which permit the calculation of thermal diffuse and Bragg-scattering cross-sections of silicon., and sapphire as a function of material's constants, temperature and neutron energy, E, in the range 0.1 MeV .A discussion of the use of their single-crystal as a thermal neutron filter in terms of the optimum crystal thickness, mosaic spread, temperature, cutting plane and tuning for efficient transmission of thermal-reactor neutrons is given
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Investigations of morphological changes during annealing of polyethylene single crystals
Tian, M.; Loos, J.
2001-01-01
The morphological evolution of isolated individual single crystals deposited on solid substrates was investigated during annealing experiments using in situ and ex situ atomic force microscopy techniques. The crystal morphology changed during annealing at temperatures slightly above the original
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Antiferromagnetism in chromium alloy single crystals
DEFF Research Database (Denmark)
Bjerrum Møller, Hans; Trego, A.L.; Mackintosh, A.R.
1965-01-01
The antiferromagnetism of single crystals of dilute alloys of V, Mn and Re in Cr has been studied at 95°K and 300°K by neutron diffraction. The addition of V causes the diffraction peaks to decrease in intensity and move away from (100), while Mn and Re cause them to increase and approach (100) s...
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Optical properties of Sulfur doped InP single crystals
El-Nahass, M. M.; Youssef, S. B.; Ali, H. A. M.
2014-05-01
Optical properties of InP:S single crystals were investigated using spectrophotometric measurements in the spectral range of 200-2500 nm. The absorption coefficient and refractive index were calculated. It was found that InP:S crystals exhibit allowed and forbidden direct transitions with energy gaps of 1.578 and 1.528 eV, respectively. Analysis of the refractive index in the normal dispersion region was discussed in terms of the single oscillator model. Some optical dispersion parameters namely: the dispersion energy (Ed), single oscillator energy (Eo), high frequency dielectric constant (ɛ∞), and lattice dielectric constant (ɛL) were determined. The volume and the surface energy loss functions (VELF & SELF) were estimated. Also, the real and imaginary parts of the complex conductivity were calculated.
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International Nuclear Information System (INIS)
Lau, S.T.; Lam, K.H.; Chan, H.L.W.; Choy, C.L.; Luo, H.S.; Yin, Q.R.; Yin, Z.W.
2004-01-01
Ferroelectric lead magnesium niobate-lead titanate (PMN-PT) single crystals with a composition around the rhombohedral-tetragonal morphotropic phase boundary (65 mol% of PMN) were used to fabricate single-element needle-type hydrophones for measuring the spatial and temporal characteristics of medical ultrasonic transducers. PMN-PT single crystal was grown by a modified Bridgman method. Discs (0.5 mm thick) with normal along the direction were cut and then poled by a dc field in the thickness direction. The single crystal has a high relative permittivity (ε r ∼4000) making it appropriate for small area hydrophone applications. Single-element needle-type hydrophones with this material as the sensing element have been fabricated and characterized. The hydrophones have flat frequency response and good receiving sensitivity over certain frequency range in the megahertz region
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Silicon Carbide Power Devices and Integrated Circuits
Lauenstein, Jean-Marie; Casey, Megan; Samsel, Isaak; LaBel, Ken; Chen, Yuan; Ikpe, Stanley; Wilcox, Ted; Phan, Anthony; Kim, Hak; Topper, Alyson
2017-01-01
An overview of the NASA NEPP Program Silicon Carbide Power Device subtask is given, including the current task roadmap, partnerships, and future plans. Included are the Agency-wide efforts to promote development of single-event effect hardened SiC power devices for space applications.
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On the growth of calcium tartrate tetrahydrate single crystals
Indian Academy of Sciences (India)
Unknown
Abstract. Calcium tartrate single crystals were grown using silica gel as the growth medium. Calcium for- mate mixed with formic acid was taken as the supernatant solution. It was observed that the nucleation den- sity was reduced and the size of the crystals was improved to a large extent compared to the conventional way.
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Commensurability oscillations in NdBa2Cu3Oy single crystals
Indian Academy of Sciences (India)
gated by angular dependent magnetization in very pure twinned and twin-free NdBa2 Cu3 Oy single ... The layered structure and the c-axis coherence length, ξc ≈ 4 ˚A, smaller than the lattice ... The high quality of both crystals is demonstrated by ... Commensurability oscillations in NdBa2Cu3Oy single crystals. 2. 3. 4. 5. 6.
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Cryogenic motion performances of a piezoelectric single crystal micromotor
Li, Xiaotian; Wu, Yuting; Chen, Zhijiang; Wei, Xiaoyong; Luo, Haosu; Dong, Shuxiang
2014-04-01
This study investigates the cryogenic performances of a millimeter-size piezoelectric ultrasonic linear micromotor. The piezoelectric vibrator of the micromotor is made of Pb(In1/2Nb1/2)O3 -Pb(Mg1/3Nb2/3)-PbTiO3 single crystal and operated in first-bending wobbling mode. Experiments show that the piezoelectric single crystal micromotor works effectively even at extremely low temperature of -175 °C, although its resonance peaks vary with temperature significantly. This work confirms the feasibility of cryogenic operation of the piezo-micromotor, which is meaningful for aerospace or superconducting microwave application.
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Preparation of single-crystal copper ferrite nanorods and nanodisks
International Nuclear Information System (INIS)
Du Jimin; Liu Zhimin; Wu Weize; Li Zhonghao; Han Buxing; Huang Ying
2005-01-01
This article, for the first time, reports the preparation of single-crystal copper ferrite nanorods and nanodisks. Using amorphous copper ferrite nanoparticles synthesized by reverse micelle as reaction precursor, single-crystal copper ferrite nanorods were synthesized via hydrothermal method in the presence of surfactant polyethylene glycol (PEG), however, copper ferrite nanodisks were prepared through the same procedures except the surfactant PEG. The resulting nanomaterials have been characterized by powder X-ray diffraction (XRD), selected electron area diffraction (SEAD), and transmission electron microscopy (TEM). The bulk composition of the samples was determined by means of X-ray photoelectron spectroscopy (XPS)
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Directory of Open Access Journals (Sweden)
Jinghui Li
2015-01-01
Full Text Available In order to investigate the anisotropic micromechanical properties of single-crystal nickel-based superalloy DD99 of four crystallographic orientations, (001, (215, (405, and (605, microindentation test (MIT was conducted with different loads and loading velocities by a sharp Berkovich indenter. Some material parameters reflecting the micromechanical behavior of DD99, such as microhardness H, Young’s modulus E, yield stress σy, strain hardening component n, and tensile strength σb, can be obtained from load-displacement relations. H and E of four different crystal planes evidently decrease with the increase of h. The reduction of H is due to dislocation hardening while E is related to interplanar spacing and crystal variable. σy of (215 is the largest among four crystal planes, followed by (605, and (001 has the lowest value. n of (215 is the lowest, followed by (605, and that of (001 is the largest. Subsequently, a simplified elastic-plastic material model was employed for 3D microindentation simulation of DD99 with various crystal orientations. The simulation results agreed well with experimental, which confirmed the accuracy of the simplified material model.
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Huang, Chao; Wu, Jie; Song, Chuanjun; Ding, Ran; Qiao, Yan; Hou, Hongwei; Chang, Junbiao; Fan, Yaoting
2015-06-28
Upon single-crystal-to-single-crystal (SCSC) oxidation/reduction, reversible structural transformations take place between the anionic porous zeolite-like Cu(I) framework and a topologically equivalent neutral Cu(I)Cu(II) mixed-valent framework. The unique conversion behavior of the Cu(I) framework endowed it as a redox-switchable catalyst for the direct arylation of heterocycle C-H bonds.
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Surface relief grating formation on a single crystal of 4-(dimethylamino)azobenzene
International Nuclear Information System (INIS)
Nakano, Hideyuki; Tanino, Takahiro; Shirota, Yasuhiko
2005-01-01
Surface relief grating (SRG) formation on an organic single crystal by irradiation with two coherent laser beams has been demonstrated by using 4-(dimethylamino)azobenzene (DAAB). It was found that the SRG formation was greatly depending upon both the coordination of the crystal and the polarization of the writing beams. The dependence of the polarization of writing beams on the SRG formation using the single crystal was found to be quite different from that reported for amorphous polymers and photochromic amorphous molecular materials, suggesting that the mechanism of the SRG formation on the organic crystal is somewhat different from that on amorphous materials
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Encapsulation of nanoparticles into single-crystal ZnO nanorods and microrods
Directory of Open Access Journals (Sweden)
Jinzhang Liu
2014-04-01
Full Text Available One-dimensional single crystal incorporating functional nanoparticles of other materials could be an interesting platform for various applications. We studied the encapsulation of nanoparticles into single-crystal ZnO nanorods by exploiting the crystal growth of ZnO in aqueous solution. Two types of nanodiamonds with mean diameters of 10 nm and 40 nm, respectively, and polymer nanobeads with size of 200 nm have been used to study the encapsulation process. It was found that by regrowing these ZnO nanorods with nanoparticles attached to their surfaces, a full encapsulation of nanoparticles into nanorods can be achieved. We demonstrate that our low-temperature aqueous solution growth of ZnO nanorods do not affect or cause degradation of the nanoparticles of either inorganic or organic materials. This new growth method opens the way to a plethora of applications combining the properties of single crystal host and encapsulated nanoparticles. We perform micro-photoluminescence measurement on a single ZnO nanorod containing luminescent nanodiamonds and the spectrum has a different shape from that of naked nanodiamonds, revealing the cavity effect of ZnO nanorod.
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International Nuclear Information System (INIS)
Sharonov, G.V.; Petrov, S.A.; Bol'shakov, A.P.; Ral'chenko, V.G.; Kazyuchits, N.M.
2010-01-01
The prospects for use of CVD-technology for epitaxial growth of single-crystal diamond films of instrumental quality in UHF plasma for the production of optoelectronic devices are discussed. A technology for processing diamond single crystals that provides a perfect surface crystal structure with roughness less than 0,5 nm was developed. It was demonstrated that selective UV detectors based on synthetic single-crystal diamond substrates coated with single-crystal films can be produced. A criterion for selecting clean and structurally perfect single crystals of synthetic diamond was developed for the epitaxial growth technology. (authors)
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Blue luminescence in Tm3+-doped KGd(WO4)2 single crystals
International Nuclear Information System (INIS)
Gueell, F.; Mateos, X.; Gavalda, Jna.; Sole, R.; Aguilo, M.; Diaz, F.; Massons, J.
2004-01-01
Up-conversion blue emissions of trivalent thulium ions in monoclinic KGd(WO 4 ) 2 single crystals at 454 and 479 nm are reported for a single pump laser source at 688 nm. We grew thulium-doped KGd(WO 4 ) 2 single crystals at several concentrations from 0.1% to 10%. We recorded a polarized optical absorption spectrum for the 3 F 2 + 3 F 3 energy levels of thulium at room temperature and low temperature (6 K). From the low temperature emission spectra we determined the splitting of the 3 H 6 ground state. The blue emissions are characterized as a function of the dopant concentration and temperature from 10 K to room temperature. To our knowledge, this is the first time that sequential two-photon excitation process (STEP) generated blue emissions in thulium-doped single crystals with a single excitation wavelength
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Sudhakar, K.; Nandhini, S.; Muniyappan, S.; Arumanayagam, T.; Vivek, P.; Murugakoothan, P.
2018-04-01
Ammonium sulfate hydrogen sulphamate (ASHS), an inorganic nonlinear optical crystal, was grown from the aqueous solution by slow evaporation solution growth technique. The single-crystal XRD confirms that the grown single crystal belongs to the orthorhombic system with the space group of Pna21. Powder XRD confirms the crystalline nature and the diffraction planes were indexed. Crystalline perfection of grown crystal was analysed by high-resolution X-ray diffraction rocking curve technique. UV-Vis-NIR studies revealed that ASHS crystal has optical transparency 65% and lower cut-off wavelength at 218 nm. The violet light emission of the crystal was identified by photoluminescence studies. The particle size-dependent second-harmonic generation efficiency for ASHS crystal was evaluated by Kurtz-Perry powder technique using Nd:YAG laser which established the existence of phase matching. Surface laser damage threshold value was evaluated using Nd:YAG laser. Optical homogeneity of the crystal was evaluated using modified channel spectrum method through birefringence study. Thermal analysis reveals that ASHS crystal is stable up to 213 °C. The mechanical behaviour of the ASHS crystal was analysed using Vickers microhardness study.
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Beryllium, zinc and lead single crystals as a thermal neutron monochromators
Energy Technology Data Exchange (ETDEWEB)
Adib, M.; Habib, N. [Reactor Physics Department, NRC, Atomic Energy Authority, Cairo (Egypt); Bashter, I.I. [Physics Department, Faculty of Science, Zagazig University (Egypt); Morcos, H.N.; El-Mesiry, M.S. [Reactor Physics Department, NRC, Atomic Energy Authority, Cairo (Egypt); Mansy, M.S., E-mail: drmohamedmansy88@hotmail.com [Physics Department, Faculty of Science, Zagazig University (Egypt)
2015-03-15
Highlights: •Monochromatic features of Be, Zn and Pb single crystals. •Calculations of neutron reflectivity using a computer program MONO. •Optimum mosaic spread, thickness and cutting plane of single crystals. -- Abstract: The monochromatic features of Be, Zn and Pb single crystals are discussed in terms of orientation, mosaic spread, and thickness within the wavelength band from 0.04 up to 0.5 nm. A computer program MONO written in “FORTRAN-77”, has been adapted to carry out the required calculations. Calculations show that a 5 mm thick of beryllium (HCP structure) single crystal cut along its (0 0 2) plane having 0.6° FWHM are the optimum parameters when it is used as a monochromator with high reflected neutron intensity from a thermal neutron flux. Furthermore, at wavelengths shorter than 0.16 nm it is free from the accompanying higher order ones. Zinc (HCP structure) has the same parameters, with intensity much less than the latter. The same features are seen with lead (FCC structure) cut along its (3 1 1) plane with less reflectivity than the former. However, Pb (3 1 1) is more preferable than others at neutron wavelengths ⩽ 0.1 nm, since the glancing angle (θ ∼ 20°) is more suitable to carry out diffraction experiments. For a cold neutron flux, the first-order neutrons reflected from beryllium is free from the higher orders up to 0.36 nm. While for Zn single crystal is up to 0.5 nm.
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Welding and Weldability of Directionally Solidified Single Crystal Nickel-Base Superalloys
Energy Technology Data Exchange (ETDEWEB)
Vitek, J M; David, S A; Reed, R W; Burke, M A; Fitzgerald, T J
1997-09-01
Nickel-base superalloys are used extensively in high-temperature service applications, and in particular, in components of turbine engines. To improve high-temperature creep properties, these alloys are often used in the directionally-solidified or single-crystal form. The objective of this CRADA project was to investigate the weldability of both experimental and commercial nickel-base superalloys in polycrystalline, directionally-solidified, and single-crystal forms.
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Fischer, M.; Sperlich, A.; Kraus, H.; Ohshima, T.; Astakhov, G. V.; Dyakonov, V.
2018-05-01
We investigate the pump efficiency of silicon-vacancy-related spins in silicon carbide. For a crystal inserted into a microwave cavity with a resonance frequency of 9.4 GHz, the spin population inversion factor of 75 with the saturation optical pump power of about 350 mW is achieved at room temperature. At cryogenic temperature, the pump efficiency drastically increases, owing to an exceptionally long spin-lattice relaxation time exceeding one minute. Based on the experimental results, we find realistic conditions under which a silicon carbide maser can operate in continuous-wave mode and serve as a quantum microwave amplifier.
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Solid phase epitaxy of amorphous silicon carbide: Ion fluence dependence
International Nuclear Information System (INIS)
Bae, I.-T.; Ishimaru, Manabu; Hirotsu, Yoshihiko; Sickafus, Kurt E.
2004-01-01
We have investigated the effect of radiation damage and impurity concentration on solid phase epitaxial growth of amorphous silicon carbide (SiC) as well as microstructures of recrystallized layer using transmission electron microscopy. Single crystals of 6H-SiC with (0001) orientation were irradiated with 150 keV Xe ions to fluences of 10 15 and 10 16 /cm 2 , followed by annealing at 890 deg. C. Full epitaxial recrystallization took place in a specimen implanted with 10 15 Xe ions, while retardation of recrystallization was observed in a specimen implanted with 10 16 /cm 2 Xe ions. Atomic pair-distribution function analyses and energy dispersive x-ray spectroscopy results suggested that the retardation of recrystallization of the 10 16 Xe/cm 2 implanted sample is attributed to the difference in amorphous structures between the 10 15 and 10 16 Xe/cm 2 implanted samples, i.e., more chemically disordered atomistic structure and higher Xe impurity concentration in the 10 16 Xe/cm 2 implanted sample
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Synthesis and ultrastructure of plate-like apatite single crystals as a model for tooth enamel
International Nuclear Information System (INIS)
Zhuang, Zhi; Yoshimura, Hideyuki; Aizawa, Mamoru
2013-01-01
Hydroxyapatite (HAp) is an inorganic constituent compound of human bones and teeth, with superior biocompatibility and bioactivity characteristics. Its crystal structure is hexagonal, characterized by a(b)- and c-planes. In vertebrate long bones, HAp crystals have a c-axis orientation, while in tooth enamel, they have an a(b)-axis orientation. Many methods can be used to synthesize c-axis oriented HAp single crystals; however, to the best of our knowledge, there have been no reports on a synthesis method for a(b)-axis oriented HAp single crystals. In this study, we successfully synthesized plate-like HAp crystals at the air–liquid interface of a starting solution via an enzyme reaction of urea with urease. Crystal phase analysis and ultrastructure observations were carried out, and the results indicated that the particles were single crystals, with almost the same a(b)-axis orientation as tooth enamel. It is hoped that by utilizing their unique surface charge and atomic arrangement, the resulting particles can be used as a high-performance biomaterial, capable of adsorbing bio-related substances and a model for tooth enamel. - Highlights: ► Synthesis of plate-like hydroxyapatite crystals at air–liquid interface ► Ultrastructural analysis of plate-like hydroxyapatite crystals ► Plate-like hydroxyapatite single crystals with a high a(b)-axis orientation ► Plate-like hydroxyapatite single crystals as a model for tooth enamel
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Synthesis and ultrastructure of plate-like apatite single crystals as a model for tooth enamel
Energy Technology Data Exchange (ETDEWEB)
Zhuang, Zhi, E-mail: zhuang@meiji.ac.jp [Department of Applied Chemistry, School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki, Kanagawa 214-8571 (Japan); Yoshimura, Hideyuki, E-mail: hyoshi@isc.meiji.ac.jp [Department of Physics, School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki, Kanagawa 214-8571 (Japan); Aizawa, Mamoru, E-mail: mamorua@isc.meiji.ac.jp [Department of Applied Chemistry, School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki, Kanagawa 214-8571 (Japan)
2013-07-01
Hydroxyapatite (HAp) is an inorganic constituent compound of human bones and teeth, with superior biocompatibility and bioactivity characteristics. Its crystal structure is hexagonal, characterized by a(b)- and c-planes. In vertebrate long bones, HAp crystals have a c-axis orientation, while in tooth enamel, they have an a(b)-axis orientation. Many methods can be used to synthesize c-axis oriented HAp single crystals; however, to the best of our knowledge, there have been no reports on a synthesis method for a(b)-axis oriented HAp single crystals. In this study, we successfully synthesized plate-like HAp crystals at the air–liquid interface of a starting solution via an enzyme reaction of urea with urease. Crystal phase analysis and ultrastructure observations were carried out, and the results indicated that the particles were single crystals, with almost the same a(b)-axis orientation as tooth enamel. It is hoped that by utilizing their unique surface charge and atomic arrangement, the resulting particles can be used as a high-performance biomaterial, capable of adsorbing bio-related substances and a model for tooth enamel. - Highlights: ► Synthesis of plate-like hydroxyapatite crystals at air–liquid interface ► Ultrastructural analysis of plate-like hydroxyapatite crystals ► Plate-like hydroxyapatite single crystals with a high a(b)-axis orientation ► Plate-like hydroxyapatite single crystals as a model for tooth enamel.
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Single Crystal Synthesis and STM Studies of High Temperature Superconductors
Barrientos, Alfonso
1997-01-01
This is a final report for the work initiated in September of 1994 under the grant NAG8-1085 - NASA/OMU, on the fabrication of bulk and single crystal synthesis, specific heat measuring and STM studies of high temperature superconductors. Efforts were made to fabricate bulk and single crystals of mercury based superconducting material. A systematic thermal analysis on the precursors for the corresponding oxides and carbonates were carried out to synthesized bulk samples. Bulk material was used as seed in an attempt to grow single crystals by a two-step self flux process. On the other hand bulk samples were characterized by x-ray diffraction, electrical resistivity and magnetic susceptibility, We studied the specific heat behavior in the range from 80 to 300 K. Some preliminary attempts were made to study the atomic morphology of our samples. As part of our efforts we built an ac susceptibility apparatus for measuring the transition temperature of our sintered samples.
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The diffusion bonding of silicon carbide and boron carbide using refractory metals
International Nuclear Information System (INIS)
Cockeram, B.V.
1999-01-01
Joining is an enabling technology for the application of structural ceramics at high temperatures. Metal foil diffusion bonding is a simple process for joining silicon carbide or boron carbide by solid-state, diffusive conversion of the metal foil into carbide and silicide compounds that produce bonding. Metal diffusion bonding trials were performed using thin foils (5 microm to 100 microm) of refractory metals (niobium, titanium, tungsten, and molybdenum) with plates of silicon carbide (both α-SiC and β-SiC) or boron carbide that were lapped flat prior to bonding. The influence of bonding temperature, bonding pressure, and foil thickness on bond quality was determined from metallographic inspection of the bonds. The microstructure and phases in the joint region of the diffusion bonds were evaluated using SEM, microprobe, and AES analysis. The use of molybdenum foil appeared to result in the highest quality bond of the metal foils evaluated for the diffusion bonding of silicon carbide and boron carbide. Bonding pressure appeared to have little influence on bond quality. The use of a thinner metal foil improved the bond quality. The microstructure of the bond region produced with either the α-SiC and β-SiC polytypes were similar
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Crystal growth and luminescence properties of Pr-doped LuLiF4 single crystal
International Nuclear Information System (INIS)
Sugiyama, Makoto; Yanagida, Takayuki; Yokota, Yuui; Kurosawa, Shunsuke; Fujimoto, Yutaka; Yoshikawa, Akira
2013-01-01
0.1, 1, and 3% Pr (with respect to Lu) doped LuLiF 4 (Pr:LuLiF 4 ) single crystals were grown by the micro-pulling-down (μ-PD) method. Transparency of the grown crystals was higher than 70% in the visible wavelength region with some absorption bands due to Pr 3+ 4f-4f transitions. Intense absorption bands related with the Pr 3+ 4f-5d transitions were observed at 190 and 215 nm. In radioluminescence spectra, Pr 3+ 5d-4f emissions were observed at 220, 240, 340, and 405 nm. In the pulse height spectra recorded under 137 Cs γ-ray excitation, the Pr 3% doped sample showed the highest light yield of 2050 photons/MeV and the scintillation decay time of it exhibited 23 and 72 ns also excited by 137 Cs γ-ray. -- Highlights: ► 0.1, 1, and 3% Pr-doped LuLiF 4 single crystals were grown by the μ-PD method. ► Pr 3+ 5d-4f emission peaks appeared at 220, 240, 340, and 405 nm ► The Pr 3%:LuLiF 4 crystal showed the highest light yield of 2050 photons/MeV
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Stacking fault tetrahedron induced plasticity in copper single crystal
Energy Technology Data Exchange (ETDEWEB)
Zhang, Liang, E-mail: lz592@uowmail.edu.au [School of Mechanical, Materials and Mechatronic Engineering, University of Wollongong, Wollongong, NSW 2522 (Australia); Lu, Cheng, E-mail: chenglu@uow.edu.au [School of Mechanical, Materials and Mechatronic Engineering, University of Wollongong, Wollongong, NSW 2522 (Australia); Tieu, Kiet; Su, Lihong; Zhao, Xing [School of Mechanical, Materials and Mechatronic Engineering, University of Wollongong, Wollongong, NSW 2522 (Australia); Pei, Linqing [Department of Mechanical Engineering, Chongqing University, Chongqing 400044 (China)
2017-01-05
Stacking fault tetrahedron (SFT) is the most common type of vacancy clustered defects in fcc metals and alloys, and can play an important role in the mechanical properties of metallic materials. In this study, molecular dynamics (MD) simulations were carried out to investigate the incipience of plasticity and the underlying atomic mechanisms in copper single crystals with SFT. Different deformation mechanisms of SFT were reported due to the crystal orientations and loading directions (compression and tension). The results showed that the incipient plasticity in crystals with SFT resulted from the heterogeneous dislocation nucleation from SFT, so the stress required for plastic deformation was less than that needed for perfect single crystals. Three crystal orientations ([1 0 0], [1 1 0] and [1 1 1]) were specified in this study because they can represent most of the typical deformation mechanisms of SFT. MD simulations revealed that the structural transformation of SFT was frequent under the applied loading; a metastable SFT structure and the collapse of SFT were usually observed. The structural transformation resulted in a different reduction of yield stress in compression and tension, and also caused a decreased or reversed compression/tension asymmetry. Compressive stress can result in the unfaulting of Frank loop in some crystal orientations. According to the elastic theory of dislocation, the process of unfaulting was closely related to the size of the dislocation loop and the stacking fault energy.
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Preparation and characterization of single-crystal multiferroic nanofiber composites
Energy Technology Data Exchange (ETDEWEB)
Ren, Zhaohui; Xiao, Zhen; Yin, Simin; Mai, Jiangquan; Liu, Zhenya; Xu, Gang; Li, Xiang; Shen, Ge [State Key Lab of Silicon Materials, Department of Material Science and Engineering, Cyrus Tang Center for Sensor Materials and Applications, Zhejiang University, Hangzhou 310027 (China); Han, Gaorong, E-mail: hgr@zju.edu.cn [State Key Lab of Silicon Materials, Department of Material Science and Engineering, Cyrus Tang Center for Sensor Materials and Applications, Zhejiang University, Hangzhou 310027 (China)
2013-03-05
Graphical abstract: One-dimensional single-crystal multiferroic composites composed of PbTiO{sub 3} nanofiber-CoFe{sub 2}O{sub 4} nanodot have been prepared for the first time by a facile in situ solid state sintering method. The composites demonstrate ferroelectricity and ferromagnetism as well as strong coupling between them. Highlights: ► 1D single-crystal multiferroic PTO-CFO was prepared via in situ solid state sintering method. ► A simple epitaxial growth relation has been found between the PTO–CFO composites. ► The composites reveal ferroelectricity and ferromagnetism as well as coupling between them. -- Abstract: One-dimensional single-crystal multiferroic composites consisting of PbTiO{sub 3} (PTO) nanofiber-CoFe{sub 2}O{sub 4} (CFO) nanodot were prepared using an in situ solid state sintering method, where pre-perovskite PTO nanofibers and CFO nanodots were used as precursors. Structural analyses by using transmission electron microscopy, scanning electron microscopy and X-ray diffraction determined a epitaxial growth relation between the PTO nanofiber and the CFO nanodot. Ferromagnetism and ferroelectricity of the nanofiber composites were investigated by using vibarting sample magnetometer (VSM) and piezoresponse force microscopy (PFM)
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Welding and joining of single crystals of BCC refractory metals
International Nuclear Information System (INIS)
Hiraoka, Yutaka; Fujii, Tadayuki
1989-01-01
Welding and joining is one of key technologies for the wider utilizations of a material. In the present work, the applicability of welding and joining for a single crystal of BCC refractory metal was investigated. Electron-beam welding and tungsten-inert-gas welding by a melt-run technique, and high-temperature brazing by using brazing metals such as Mo-40%Ru alloy, vanadium or platinum were conducted for molybdenum single crystal which had been prepared by means of secondary recrystallization. 12 refs.,12 figs., 2 tabs. (Author)
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Elastic neutron diffraction study of transforming and non-transforming single crystal ZrV2
International Nuclear Information System (INIS)
Bostock, J.; Wong, M.; MacVicar, M.L.A.; Levinson, M.
1980-01-01
The mosaic spread of single crystal ZrV 2 is unusually narrow, approx. 1' from room temperature to 130K. For non-transforming perfect single crystal the mosaic gradually increases to approx. 1.86' at 4.2K; for transforming, twinned single crystal the room temperature mosaic is maintained to 110K, then increases to 2.76' at 94K when the crystal transforms to a mixed cubic (30%) and rhombohedral state (70%). The onset of the electronic instability (approx. 100K) is accompanied by an increase in diffuse scattering background which, for the twinned crystal, peaks at the structural transformation. The electronic instability coupled to the localized lattice stress appears to be the driving mechanism for the transformation
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Self-reporting inhibitors: single crystallization process to get two optically pure enantiomers.
Wan, Xinhua; Ye, Xichong; Cui, Jiaxi; Li, Bowen; Li, Na; Zhang, Jie
2018-05-22
Collection of two optically pure enantiomers in a single crystallization process can significantly increase the chiral separation efficiency but it's hard to realize nowadays. Herein we describe, for the first time, a self-reporting strategy for visualizing the crystallization process by a kind of dyed self-assembled inhibitors made from the copolymers with tri(ethylene glycol)-grafting polymethylsiloxane as main chains and poly(N6-methacryloyl-L-lysine) as side chains. When applied with seeds together for the fractional crystallization of conglomerates, the inhibitors can label the formation of the secondary crystals and guide us to completely separate the crystallization process of two enantiomers with colorless crystals as the first product and red crystals as the secondary product. This method leads to high optical purity of D/L-Asn·H2O (99.9 ee% for D-crystals and 99.5 ee% for L-crystals) in a single crystallization process. Moreover, it requires low feeding amount of additives and shows excellent recyclability. We foresee its great potential in developing novel chiral separation methods that can be used in different scales. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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Single crystal magnetisation of UFe10Mo2
International Nuclear Information System (INIS)
Estrela, P.; Godinho, M.; Spirlet, J.C.
1997-01-01
Magnetisation measurements have been performed for different directions on aligned UFe 10 Mo 2 single crystals. The results confirm a basal plane anisotropy and suggest an important magnetic contribution from the uranium sublattice. (orig.)
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Growth Stresses in Thermally Grown Oxides on Nickel-Based Single-Crystal Alloys
Rettberg, Luke H.; Laux, Britta; He, Ming Y.; Hovis, David; Heuer, Arthur H.; Pollock, Tresa M.
2016-03-01
Growth stresses that develop in α-Al2O3 scale that form during isothermal oxidation of three Ni-based single crystal alloys have been studied to elucidate their role in coating and substrate degradation at elevated temperatures. Piezospectroscopy measurements at room temperature indicate large room temperature compressive stresses in the oxides formed at 1255 K or 1366 K (982 °C or 1093 °C) on the alloys, ranging from a high of 4.8 GPa for René N4 at 1366 K (1093 °C) to a low of 3.8 GPa for René N5 at 1255 K (982 °C). Finite element modeling of each of these systems to account for differences in coefficients of thermal expansion of the oxide and substrate indicates growth strains in the range from 0.21 to 0.44 pct at the oxidation temperature, which is an order of magnitude higher than the growth strains measured in the oxides on intermetallic coatings that are typically applied to these superalloys. The magnitudes of the growth strains do not scale with the parabolic oxidation rate constants measured for the alloys. Significant spatial inhomogeneities in the growth stresses were observed, due to (i) the presence of dendritic segregation and (ii) large carbides in the material that locally disrupts the structure of the oxide scale. The implications of these observations for failure during cyclic oxidation, fatigue cycling, and alloy design are considered.
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Solid-melt interface structure and growth of Cu alloy single crystals
International Nuclear Information System (INIS)
Tomimitsu, Hiroshi; Kamada, Kohji.
1983-01-01
Crystal-melt interface behavior during the growth of Cu-base solid solutions by the Bridgman method is discussed on the basis of experimental evidence obtained by neutron diffraction topography. Advantages of neutron diffraction topography for the characterization of large single crystals, such as dealt with in this paper, are emphasized. Evidence was odserved of extremely regular crystal growth along directions, irrespective of the macroscopic growth direction. This contrasts with the previously believed (110) normal growth which is a conclusion of growth theory based on molecular kinetics at the solid-melt interface. In consequence, we believe that the kinetics at the interface is a minor factor in the meltgrowth of metal single crystals. Revised melt-growth theory should include both the growth and the formation of the regular structure as evidenced by neutron diffraction topography. (author)
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Patterning solution-processed organic single-crystal transistors with high device performance
Directory of Open Access Journals (Sweden)
Yun Li
2011-06-01
Full Text Available We report on the patterning of organic single-crystal transistors with high device performance fabricated via a solution process under ambient conditions. The semiconductor was patterned on substrates via surface selective deposition. Subsequently, solvent-vapor annealing was performed to reorganize the semiconductor into single crystals. The transistors exhibited field-effect mobility (μFET of up to 3.5 cm2/V s. Good reliability under bias-stress conditions indicates low density of intrinsic defects in crystals and low density of traps at the active interfaces. Furthermore, the Y function method clearly suggests that the variation of μFET of organic crystal transistors was caused by contact resistance. Further improvement of the device with higher μFET with smaller variation can be expected when lower and more uniform contact resistance is achieved.
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Lattice effects in YVO3 single crystal
Marquina, C; Sikora, M; Ibarra, MR; Nugroho, AA; Palstra, TTM
In this paper we report on the lattice effects in the Mott insulator yttrium orthovanadate (YVO3). Linear thermal expansion and magnetostriction experiments have been performed on a single crystal, in the temperature range from 5 K to room temperature. The YVO3 orders antiferromagnetically at T-N =
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Dynamic Actuation of Single-Crystal Diamond Nanobeams
Sohn, Young-Ik; Burek, Michael J.; Kara, Vural; Kearns, Ryan; Lončar, Marko
2014-01-01
We show the dielectrophoretic actuation of single-crystal diamond nanomechanical devices. Gradient radio-frequency electromagnetic forces are used to achieve actuation of both cantilever and doubly clamped beam structures, with operation frequencies ranging from a few MHz to ~50MHz. Frequency tuning and parametric actuation are also studied.
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Method for manufacturing a single crystal nanowire
van den Berg, Albert; Bomer, Johan G.; Carlen, Edwin; Chen, S.; Kraaijenhagen, Roderik Adriaan; Pinedo, Herbert Michael
2013-01-01
A method for manufacturing a single crystal nano-structure is provided comprising the steps of providing a device layer with a 100 structure on a substrate; providing a stress layer onto the device layer; patterning the stress layer along the 110 direction of the device layer; selectively removing
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Method for manufacturing a single crystal nanowire
van den Berg, Albert; Bomer, Johan G.; Carlen, Edwin; Chen, S.; Kraaijenhagen, R.A.; Pinedo, Herbert Michael
2010-01-01
A method for manufacturing a single crystal nano-structure is provided comprising the steps of providing a device layer with a 100 structure on a substrate; providing a stress layer onto the device layer; patterning the stress layer along the 110 direction of the device layer; selectively removing
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International Nuclear Information System (INIS)
Gong, Maogao; Xiang, Weidong; Liang, Xiaojuan; Zhong, Jiasong; Chen, Daqin; Huang, Jun; Gu, Guorui; Yang, Cheng; Xiang, Run
2015-01-01
Highlights: • We report preparation of transparent Ce,Tb:YAG single crystal by Czochralski method. • The effect of annealing on Ce,Tb:YAG single crystal had been investigated. • The Ce,Tb:YAG single crystal after annealing exhibited better optical performance. • The Ce,Tb:YAG single crystal could be used as an ideal candidate for WLED. - Abstract: We report the preparation of transparent Ce and Tb co-doped Y 3 Al 5 O 12 single crystal by the Czochralski method. The characterization of the resulting single crystal was accomplished by using X-ray powder diffractometer, scanning electron microscopy and energy dispersive X-ray spectroscopy. Absorption peak of the single crystal at about 460 nm has been obtained from ultraviolet–visible absorption spectrometer and their intensity is changed with different annealing condition. Its optical properties also have been investigated using fluorescence spectrometer. What’s more, its photoelectric parameters were studied by LED fast spectrometer. The constructed single crystal based white-light-emitting diode exhibits a high luminous efficiency of 140.89 lm/W, and a correlated color temperature of 4176 K as well as a color rendering index of 56.7, which reveal the prominent feasibility of the present single crystal material in white-light-emitting diode application
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Energy Technology Data Exchange (ETDEWEB)
Gong, Maogao [College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou 325035 (China); Xiang, Weidong, E-mail: xiangweidong001@126.com [College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou 325035 (China); Liang, Xiaojuan [College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou 325035 (China); Zhong, Jiasong; Chen, Daqin [College of Materials & Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018 (China); Huang, Jun; Gu, Guorui; Yang, Cheng; Xiang, Run [College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou 325035 (China)
2015-08-05
Highlights: • We report preparation of transparent Ce,Tb:YAG single crystal by Czochralski method. • The effect of annealing on Ce,Tb:YAG single crystal had been investigated. • The Ce,Tb:YAG single crystal after annealing exhibited better optical performance. • The Ce,Tb:YAG single crystal could be used as an ideal candidate for WLED. - Abstract: We report the preparation of transparent Ce and Tb co-doped Y{sub 3}Al{sub 5}O{sub 12} single crystal by the Czochralski method. The characterization of the resulting single crystal was accomplished by using X-ray powder diffractometer, scanning electron microscopy and energy dispersive X-ray spectroscopy. Absorption peak of the single crystal at about 460 nm has been obtained from ultraviolet–visible absorption spectrometer and their intensity is changed with different annealing condition. Its optical properties also have been investigated using fluorescence spectrometer. What’s more, its photoelectric parameters were studied by LED fast spectrometer. The constructed single crystal based white-light-emitting diode exhibits a high luminous efficiency of 140.89 lm/W, and a correlated color temperature of 4176 K as well as a color rendering index of 56.7, which reveal the prominent feasibility of the present single crystal material in white-light-emitting diode application.
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Structural and optical properties of WTe2 single crystals synthesized by DVT technique
Dixit, Vijay; Vyas, Chirag; Pathak, V. M.; Soalanki, G. K.; Patel, K. D.
2018-05-01
Layered transition metal di-chalcogenide (LTMDCs) crystals have attracted much attention due to their potential in optoelectronic device applications recently due to realization of their monolayer based structures. In the present investigation we report growth of WTe2 single crystals by direct vapor transport (DVT) technique. These crystals are then characterized by energy dispersive analysis of x-rays (EDAX) to study stoichiometric composition after growth. The structural properties are studied by x-ray diffraction (XRD) and selected area electron diffraction (SAED) is used to confirm orthorhombic structure of grown WTe2 crystal. Surface morphological properties of the crystals are also studied by scanning electron microscope (SEM). The optical properties of the grown crystals are studied by UV-Visible spectroscopy which gives direct band gap of 1.44 eV for grown WTe2 single crystals.
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Single-crystal neutron diffraction at the Australian Replacement Research Reactor
International Nuclear Information System (INIS)
Klooster, W.T.
2001-01-01
The purpose of the workshop was to: identify the future needs and opportunities for single-crystal neutron diffraction, and specify instrument requirements. important number of experiments. The conclusion of the workshop deliberation was that Australia has a diverse community of users of single-crystal neutron diffraction. A (quasi)-Laue image-plate diffractometer allows the fastest throughput by far, but would exclude an important number of experiments. Most of these could be covered by the additional possibility to locate the image-plate detector on a monochromatic beam. Therefore it was recommend both a white thermal beam and a monochromatic beam (λ= 1 to 2.4 Angstroms) for an image-plate detector. At little additional cost the existing 2TanA instrument could be located semi-permanently on the same monochromatic beam, thus offering three quite different types of single-crystal instruments. Small improvements could be made to the 2TanA instrument to cater for the remaining experiments not suited to an image-plate diffractometer: exchange of the Eulerian cradle for an automated tilt goniometer for extremely bulky sample environment (cryomagnets, large pressure cells), optional larger area detector, analyser crystal. It was recommended that an Instrument Advisory Team will be assembled, and will help in specifying, designing and commissioning the instrument
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International Nuclear Information System (INIS)
Vinnik, D.A.; Zherebtsov, D.A.; Mashkovtseva, L.S.; Nemrava, S.; Bischoff, M.; Perov, N.S.; Semisalova, A.S.; Krivtsov, I.V.; Isaenko, L.I.; Mikhailov, G.G.; Niewa, R.
2014-01-01
Highlights: • Growth of large Al-substituted crystals BaFe 12−x Al x O 19. • Al-content controllable by flux composition. • Crystallographic site preference of Al unraveled. • Magnetic characterization depending on Al-content. - Abstract: Large single crystals of aluminum-substituted M-type barium hexaferrite BaFe 12−x Al x O 19 were obtained from carbonate flux. The Al content in the crystals can be controlled via the Al content of the flux up to x = 1.1 according to single crystal X-ray structure refinements. Al shows a distinct preference to substitute Fe on crystallographic sites with high coordination numbers by oxygen atoms, whereas no significant amounts of Al can be found on a tetrahedrally coordinated site. An increasing amount of the aluminum dopant results in a monotonous reduction of the Curie temperature from 440 to 415 °C and the saturation magnetization at room temperature from 68 to 57 emu/g for single crystal and from 61 to 53 emu/g for powder samples
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Ueda, Hiroyuki; Takeuchi, Keita; Kikuchi, Akihiko
2018-04-01
We report an organic single crystal growth technique, which uses a nonvolatile liquid thin film as a crystal growth field and supplies fine droplets containing solute from the surface of the liquid thin film uniformly and continuously by electrospray deposition. Here, we investigated the relationships between the solute concentration of the supplied solution and the morphology and size of precipitated crystals for four types of fluorescent organic low molecule material [tris(8-hydroxyquinoline)aluminum (Alq3), 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (PBD), N,N‧-bis(3-methylphenyl)-N,N‧-diphenylbenzidine (TPD), and N,N-bis(naphthalene-1-yl)-N,N-diphenyl-benzidine (NPB)] using an ionic liquid as the nonvolatile liquid. As the concentration of the supplied solution decreased, the morphology of precipitated crystals changed from dendritic or leaf shape to platelike one. At the solution concentration of 0.1 mg/ml, relatively large platelike single crystals with a diagonal length of over 100 µm were obtained for all types of material. In the experiment using ionic liquid and dioctyl sebacate as nonvolatile liquids, it was confirmed that there is a clear positive correlation between the maximum volume of the precipitated single crystal and the solubility of solute under the same solution supply conditions.
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Stark tuning and electrical charge state control of single divacancies in silicon carbide
de las Casas, Charles F.; Christle, David J.; Ul Hassan, Jawad; Ohshima, Takeshi; Son, Nguyen T.; Awschalom, David D.
2017-12-01
Neutrally charged divacancies in silicon carbide (SiC) are paramagnetic color centers whose long coherence times and near-telecom operating wavelengths make them promising for scalable quantum communication technologies compatible with existing fiber optic networks. However, local strain inhomogeneity can randomly perturb their optical transition frequencies, which degrades the indistinguishability of photons emitted from separate defects and hinders their coupling to optical cavities. Here, we show that electric fields can be used to tune the optical transition frequencies of single neutral divacancy defects in 4H-SiC over a range of several GHz via the DC Stark effect. The same technique can also control the charge state of the defect on microsecond timescales, which we use to stabilize unstable or non-neutral divacancies into their neutral charge state. Using fluorescence-based charge state detection, we show that both 975 nm and 1130 nm excitation can prepare their neutral charge state with near unity efficiency.
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Single-crystal diffraction instrument TriCS at SINQ
Schefer, J.; Könnecke, M.; Murasik, A.; Czopnik, A.; Strässle, Th; Keller, P.; Schlumpf, N.
2000-03-01
The single-crystal diffractometer TriCS at the Swiss Continuous Spallation Source (SINQ) is presently in the commissioning phase. A two-dimensional wire detector produced by EMBL was delivered in March 1999. The instrument is presently tested with a single detector. First measurements on magnetic structures have been performed. The instrument is remotely controlled using JAVA-based software and a UNIX DEC-α host computer.
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Fergusonite-type CeNbO{sub 4+δ}: Single crystal growth, symmetry revision and conductivity
Energy Technology Data Exchange (ETDEWEB)
Bayliss, Ryan D. [Department of Materials, Imperial College London, Prince Consort Road, London, SW7 2BP (United Kingdom); Pramana, Stevin S.; An, Tao; Wei, Fengxia; Kloc, Christian L. [School of Materials Science and Engineering, 50 Nanyang Avenue, Nanyang Technological University, 639798 (Singapore); White, Andrew J.P. [Chemical Crystallography Laboratory, Department of Chemistry, Imperial College London, Exhibition Road, London, SW7 2AZ (United Kingdom); Skinner, Stephen J. [Department of Materials, Imperial College London, Prince Consort Road, London, SW7 2BP (United Kingdom); White, Timothy J. [School of Materials Science and Engineering, 50 Nanyang Avenue, Nanyang Technological University, 639798 (Singapore); Baikie, Tom, E-mail: tbaikie@ntu.edu.sg [School of Materials Science and Engineering, 50 Nanyang Avenue, Nanyang Technological University, 639798 (Singapore)
2013-08-15
Large fergusonite-type (ABO{sub 4}, A=Ce, B=Nb) oxide crystals, a prototype electrolyte composition for solid oxide fuel cells (SOFC), were prepared for the first time in a floating zone mirror furnace under air or argon atmospheres. While CeNbO{sub 4} grown in air contained CeNbO{sub 4.08} as a minor impurity that compromised structural analysis, the argon atmosphere yielded a single phase crystal of monoclinic CeNbO{sub 4}, as confirmed by selected area electron diffraction, powder and single crystal X-ray diffraction. The structure was determined in the standard space group setting C12/c1 (No. 15), rather than the commonly adopted I12/a1. AC impedance spectroscopy conducted under argon found that stoichiometric CeNbO{sub 4} single crystals showed lower conductivity compared to CeNbO{sub 4+δ} confirming interstitial oxygen can penetrate through fergusonite and is responsible for the higher conductivity associated with these oxides. - Graphical abstract: Large fergusonite-type CeNbO{sub 4} crystals were prepared for the first time in a floating zone mirror furnace. Crystal growth in an argon atmosphere yielded a single phase monoclinic CeNbO4, as confirmed by selected area electron diffraction, powder and single crystal X-ray diffraction. The structure was determined in the standard space group setting C12/c1 (No. 15), rather than the commonly adopted I12/a1. AC impedance spectroscopy found CeNbO{sub 4} single crystals showed lower conductivity compared to CeNbO{sub 4+δ} confirming interstitial oxygen can penetrate through fergusonite and is responsible for the higher conductivity associated with these oxides. Highlights: • Preparation of single crystals of CeNbO{sub 4} using a floating zone mirror furnace. • Correction to the crystal symmetry of the monoclinic form of CeNbO{sub 4}. • Report the conductivity of a single crystal of CeNbO{sub 4}.
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Saidaminov, Makhsud I.; Abdelhady, Ahmed L.; Banavoth, Murali; Alarousu, Erkki; Burlakov, Victor M.; Peng, Wei; Dursun, Ibrahim; Wang, Lingfei; He, Yao; Maculan, Giacomo; Goriely, Alain; Wu, Tao; Mohammed, Omar F.; Bakr, Osman
2015-01-01
Single crystals of methylammonium lead trihalide perovskites (MAPbX3; MA=CH3NH3+, X=Br− or I−) have shown remarkably low trap density and charge transport properties; however, growth of such high-quality semiconductors is a time-consuming process
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Synthesis and Single Crystal X-Ray Structure Determination of 3,3',5 ...
African Journals Online (AJOL)
Single crystal structure determination at 100 K revealed needle-like crystals in an orthorhombic crystal system. The asymmetric unit of the cell consists of an isolated chloride ion, one half of a tetrahedral [MnCl4]2- anion, a [H2Me4bpz]2+ dication and one half of a molecule of water. Keywords: Crystal Engineering, Hydrogen ...
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Characterisation of irradiation-induced defects in ZnO single crystals
International Nuclear Information System (INIS)
Prochazka, I; Cizek, J; Lukac, F; Melikhova, O; Valenta, J; Havranek, V; Anwand, W; Skuratov, V A; Strukova, T S
2016-01-01
Positron annihilation spectroscopy (PAS) combined with optical methods was employed for characterisation of defects in the hydrothermally grown ZnO single crystals irradiated by 167 MeV Xe 26+ ions to fluences ranged from 3×10 12 to 1×10 14 cm -2 . The positron lifetime (LT), Doppler broadening as well as slow-positron implantation spectroscopy (SPIS) techniques were involved. The ab-initio theoretical calculations were utilised for interpretation of LT results. The optical transmission and photoluminescence measurements were conducted, too. The virgin ZnO crystal exhibited a single component LT spectrum with a lifetime of 182 ps which is attributed to saturated positron trapping in Zn vacancies associated with hydrogen atoms unintentionally introduced into the crystal during the crystal growth. The Xe ion irradiated ZnO crystals have shown an additional component with a longer lifetime of ≈ 360 ps which comes from irradiation-induced larger defects equivalent in size to clusters of ≈10 to 12 vacancies. The concentrations of these clusters were estimated on the basis of combined LT and SPIS data. The PAS data were correlated with irradiation induced changes seen in the optical spectroscopy experiments. (paper)
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Characterisation of irradiation-induced defects in ZnO single crystals
Prochazka, I.; Cizek, J.; Lukac, F.; Melikhova, O.; Valenta, J.; Havranek, V.; Anwand, W.; Skuratov, V. A.; Strukova, T. S.
2016-01-01
Positron annihilation spectroscopy (PAS) combined with optical methods was employed for characterisation of defects in the hydrothermally grown ZnO single crystals irradiated by 167 MeV Xe26+ ions to fluences ranged from 3×1012 to 1×1014 cm-2. The positron lifetime (LT), Doppler broadening as well as slow-positron implantation spectroscopy (SPIS) techniques were involved. The ab-initio theoretical calculations were utilised for interpretation of LT results. The optical transmission and photoluminescence measurements were conducted, too. The virgin ZnO crystal exhibited a single component LT spectrum with a lifetime of 182 ps which is attributed to saturated positron trapping in Zn vacancies associated with hydrogen atoms unintentionally introduced into the crystal during the crystal growth. The Xe ion irradiated ZnO crystals have shown an additional component with a longer lifetime of ≈ 360 ps which comes from irradiation-induced larger defects equivalent in size to clusters of ≈10 to 12 vacancies. The concentrations of these clusters were estimated on the basis of combined LT and SPIS data. The PAS data were correlated with irradiation induced changes seen in the optical spectroscopy experiments.
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Effect of Ion Beam Irradiation on Silicon Carbide with Different Microstructures
International Nuclear Information System (INIS)
Park, Kyeong Hwan; Park, Ji Yeon; Kim, Weon Ju; Jung, Choong Hwan; Ryu, Woo Seog
2006-01-01
SiC and SiC/SiC composites are one of promising candidates for structural materials of the next generation energy systems such as the gas-cooled reactors and fusion reactors. This anticipation yields many material issues, and radiation effects of silicon carbide are recognized as an important research subject. Silicon carbide has diverse crystal structures (called polytypes), such as α-SiC (hexagonal structure), β-SiC (cubic structure) and amorphous SiC. Among these polytypes, β-SiC has been studied as matrix material in SiC/SiC composites. Near-stoichiometric β-SiC with high crystallinity and purity is considered as suitable material in the next generation energy system and matrix material in SiC/SiC composites because of its excellent radiation resistance. Highly pure and crystalline β-SiC and SiC/SiC composites could be obtained by the chemical vapor deposition (CVD) and Infiltration (CVI) process using a gas mixture of methyltrichlorosilane (CH 3 SiCl 3 , MTS) and purified H 2 . SiC produced by the CVD method has different grain size and microstructural morphology depended on the process conditions such as temperature, pressure and the input gas ratio. In this work, irradiation effects of silicon carbide were investigated using ion beam irradiation with emphasis on the influence of grain size and grain boundary. MeV ion irradiation at low temperature makes amorphous phase in silicon carbide. The microstructures and mechanical property changes of silicon carbide with different structures were analyzed after ion beam irradiation
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Crystal growth and mechanical hardness of In{sub 2}Se{sub 2.7}Sb{sub 0.3} single crystal
Energy Technology Data Exchange (ETDEWEB)
Patel, Piyush, E-mail: piyush-patel130@yahoo.com; Vyas, S. M., E-mail: s-m-vyas-gu@hotmail.com; Patel, Vimal; Pavagadhi, Himanshu [Department of Physics, School of Science, Gujarat University, Ahmedabad, Gujarat, India-380009 (India); Solanki, Mitesh [panditdindayal Petroleum University, Gandhinagar. Gujarat (India); Jani, Maunik P. [BITS Edu Campus, Varnama, Vadodara, Gujarat (India)
2015-08-28
The III-VI compound semiconductors is important for the fabrication of ionizing radiation detectors, solid-state electrodes, and photosensitive heterostructures, solar cell and ionic batteries. In this paper, In{sub 2}Se{sub 2.7} Sb{sub 0.3} single crystals were grown by the Bridgman method with temperature gradient of 60 °C/cm and the growth velocity 0.5cm/hr. The as-grown crystals were examined under the optical microscope for surface study, a various growth features observed on top free surface of the single crystal which is predominant of layers growth mechanism. The lattice parameters of as-grown crystal was determined by the XRD analysis. A Vickers’ projection microscope were used for the study of microhardness on the as-cleaved, cold-worked and annealed samples of the crystals, the results were discussed, and reported in detail.
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Neutron forward diffraction by single crystal prisms
Indian Academy of Sciences (India)
We have derived analytic expressions for the deflection as well as transmitted fraction of monochromatic neutrons forward diffracted by a single crystal prism. In the vicinity of a Bragg reflection, the neutron deflection deviates sharply from that for an amorphous prism, exhibiting three orders of magnitude greater sensitivity to ...
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Energy Technology Data Exchange (ETDEWEB)
Umeda, Minoru, E-mail: mumeda@vos.nagaokaut.ac.jp [Nagaoka University of Technology, Kamitomioka, Nagaoka, Niigata 940-2188 (Japan); Katagiri, Mitsuhiko; Shironita, Sayoko [Nagaoka University of Technology, Kamitomioka, Nagaoka, Niigata 940-2188 (Japan); Nagayama, Norio [Nagaoka University of Technology, Kamitomioka, Nagaoka, Niigata 940-2188 (Japan); Ricoh Company, Ltd., Nishisawada, Numazu, Shizuoka 410-0007 (Japan)
2016-12-01
Highlights: • A hole transport molecule was investigated based on its electrochemical redox characteristics. • The solubility and supersolubility curves of the molecule were measured in order to prepare a large crystal. • The polarization micrograph and XRD results revealed that a single crystal was obtained. • An anisotropic surface conduction, in which the long-axis direction exceeds that of the amorphous layer, was observed. • The anisotropic surface conduction was well explained by the molecular stacked structure. - Abstract: This paper reports the anisotropic hole transport at the triphenylamine-derivative single crystal surface prepared by a solution method. Triphenylamine derivatives are commonly used in a hole-transport material for organic photoconductors of laser-beam printers, in which the materials are used as an amorphous form. For developing organic photovoltaics using the photoconductor’s technology, preparation of a single crystal seems to be a specific way by realizing the high mobility of an organic semiconductor. In this study, a single crystal of 4-(2,2-diphenylethenyl)-N,N-bis(4-methylphenyl)-benzenamine (TPA) was prepared and its anisotropic hole-transport property measured. First, the hole-transport property of the TPA was investigated based on its chemical structure and electrochemical redox characteristics. Next, a large-scale single crystal formation at a high rate was developed by employing a solution method based on its solubility and supersolubility curves. The grown TPA was found to be a single crystal based on the polarization micrograph observation and crystallographic analysis. For the TPA single crystal, an anisotropic surface conduction was found, which was well explained by its molecular stack structure. The measured current in the long-axis direction is one order of magnitude greater than that of amorphous TPA.
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Fabrication of uranium carbide/beryllium carbide/graphite experimental-fuel-element specimens
International Nuclear Information System (INIS)
Muenzer, W.A.
1978-01-01
A method has been developed for fabricating uranium carbide/beryllium carbide/graphite fuel-element specimens for reactor-core-meltdown studies. The method involves milling and blending the raw materials and densifying the resulting blend by conventional graphite-die hot-pressing techniques. It can be used to fabricate specimens with good physical integrity and material dispersion, with densities of greater than 90% of the theoretical density, and with a uranium carbide particle size of less than 10 μm
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Plastic deformation of Ni3Nb single crystals
International Nuclear Information System (INIS)
Hagihara, Kouji; Nakano, Takayoshi; Umakoshi, Yukichi
1999-01-01
Temperature dependence of yield stress and operative slip system in Ni 3 Nb single crystals with the D0 a structure was investigated in comparison with that in an analogous L1 2 structure. Compression tests were performed at temperatures between 20 C and 1,200 C for specimens with loading axes perpendicular to (110), (331) and (270). (010)[100] slip was operative for three orientations, while (010)[001] slip for (331) and [211] twin for (270) orientations were observed, depending on deformation temperature. The critical resolved shear stress (CRSS) for the (010)[100] slip anomaly increased with increasing temperature showing a maximum peak between 400 C and 800 C depending on crystal orientation. The CRSS showed orientation dependence and no significant strain rate dependence in the temperature range for anomalous strengthening. The [100] dislocations with a screw character were aligned on the straight when the anomalous strengthening occurred. The anomalous strengthening mechanism for (010)[100] slip in Ni 3 Nb single crystals is discussed on the basis of a cross slip model which has been widely accepted for some L1 2 -type compounds
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International Nuclear Information System (INIS)
Hauk, V.; Kockelmann, H.
1979-01-01
Methods of calculation are developed for determination of single crystal elastic compliance or stiffness constants of cubic and hexagonal materials from mechanical and X-ray elastic constants of polycrystals. The calculations are applied to pure, cubic iron and hexagonal WC. There are no single crystal constants in the literature for WC, because no single crystals suitable for measurement are available. (orig.) [de
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International Nuclear Information System (INIS)
Kobayashi, Nobuhiko P.; Lohn, Andrew; Onishi, Takehiro; Mathai, Sagi; Li, Xuema; Straznicky, Joseph; Wang, Shih-Yuan; Williams, R.S.; Logeeswaran, V.J.; Islam, M.S.
2009-01-01
A new route to grow an ensemble of indium phosphide single-crystal semiconductor nanowires is described. Unlike conventional epitaxial growth of single-crystal semiconductor films, the proposed route for growing semiconductor nanowires does not require a single-crystal semiconductor substrate. In the proposed route, instead of using single-crystal semiconductor substrates that are characterized by their long-range atomic ordering, a template layer that possesses short-range atomic ordering prepared on a non-single-crystal substrate is employed. On the template layer, epitaxial information associated with its short-range atomic ordering is available within an area that is comparable to that of a nanowire root. Thus the template layer locally provides epitaxial information required for the growth of semiconductor nanowires. In the particular demonstration described in this paper, hydrogenated silicon was used as a template layer for epitaxial growth of indium phosphide nanowires. The indium phosphide nanowires grown on the hydrogenerated silicon template layer were found to be single crystal and optically active. Simple photoconductors and pin-diodes were fabricated and tested with the view towards various optoelectronic device applications where group III-V compound semiconductors are functionally integrated onto non-single-crystal platforms. (orig.)
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Energy Technology Data Exchange (ETDEWEB)
Kobayashi, Nobuhiko P.; Lohn, Andrew; Onishi, Takehiro [University of California, Santa Cruz (United States). Baskin School of Engineering; NASA Ames Research Center, Nanostructured Energy Conversion Technology and Research (NECTAR), Advanced Studies Laboratories, Univ. of California Santa Cruz, Moffett Field, CA (United States); Mathai, Sagi; Li, Xuema; Straznicky, Joseph; Wang, Shih-Yuan; Williams, R.S. [Hewlett-Packard Laboratories, Information and Quantum Systems Laboratory, Palo Alto, CA (United States); Logeeswaran, V.J.; Islam, M.S. [University of California Davis, Electrical and Computer Engineering, Davis, CA (United States)
2009-06-15
A new route to grow an ensemble of indium phosphide single-crystal semiconductor nanowires is described. Unlike conventional epitaxial growth of single-crystal semiconductor films, the proposed route for growing semiconductor nanowires does not require a single-crystal semiconductor substrate. In the proposed route, instead of using single-crystal semiconductor substrates that are characterized by their long-range atomic ordering, a template layer that possesses short-range atomic ordering prepared on a non-single-crystal substrate is employed. On the template layer, epitaxial information associated with its short-range atomic ordering is available within an area that is comparable to that of a nanowire root. Thus the template layer locally provides epitaxial information required for the growth of semiconductor nanowires. In the particular demonstration described in this paper, hydrogenated silicon was used as a template layer for epitaxial growth of indium phosphide nanowires. The indium phosphide nanowires grown on the hydrogenerated silicon template layer were found to be single crystal and optically active. Simple photoconductors and pin-diodes were fabricated and tested with the view towards various optoelectronic device applications where group III-V compound semiconductors are functionally integrated onto non-single-crystal platforms. (orig.)
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Influence of solvents on the habit modification of alpha lactose monohydrate single crystals
Parimaladevi, P.; Srinivasan, K.
2013-02-01
Restricted evaporation of solvent method was adopted for the growth of alpha lactose monohydrate single crystals from different solvents. The crystal habits of grown crystals were analysed. The form of crystallization was confirmed by powder x-ray diffraction analysis. Thermal behaviour of the grown crystals was studied by using differential scanning calorimetry.
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Optical properties of GaS:Ho3+ and GaS:Tm3+ single crystals
International Nuclear Information System (INIS)
Jin, Moon-Seog; Kim, Chang-Dae; Kim, Wha-Tek
2004-01-01
GaS:Ho 3+ and GaS:Tm 3+ single crystals were grown by using the chemical transport reaction method. We measured the optical absorption, the infra-red absorption, and the photoluminescence spectra of the single crystals. The direct and the indirect energy band gaps of the single crystals at 13 K were identified. Infra-red absorption peaks at 6 K appeared in the single crystals. Broad emission bands at 6 K were observed at 464 nm and 580 nm for GaS:Ho 3+ and 462 nm and 581 nm for GaS:Tm 3+ . These broad emission bands were identified as originating from donor-acceptor pair recombinations. Sharp emission peak groups were observed near 435 nm, 495 nm, and 660 nm for GaS:Ho 3+ and near 672 nm for GaS:Tm 3+ . These sharp emission peak groups were identified as being due to the electron transitions between the energy levels of Ho 3+ and Tm 3+ . Especially, white photoluminescence was obtained in the GaS:Ho 3+ single crystal.
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Mechanical and optical nanodevices in single-crystal quartz
Sohn, Young-Ik; Miller, Rachel; Venkataraman, Vivek; Lončar, Marko
2017-12-01
Single-crystal α-quartz, one of the most widely used piezoelectric materials, has enabled a wide range of timing applications. Owing to the fact that an integrated thin-film based quartz platform is not available, most of these applications rely on macroscopic, bulk crystal-based devices. Here, we show that the Faraday cage angled-etching technique can be used to realize nanoscale electromechanical and photonic devices in quartz. Using this approach, we demonstrate quartz nanomechanical cantilevers and ring resonators featuring Qs of 4900 and 8900, respectively.
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Magnetic structure of URhSi single crystal
Czech Academy of Sciences Publication Activity Database
Prokeš, K.; Andreev, Alexander V.; Honda, F.; Sechovský, V.
2003-01-01
Roč. 261, - (2003), s. 131-138 ISSN 0304-8853 R&D Projects: GA ČR GA202/02/0739 Institutional research plan: CEZ:AV0Z1010914 Keywords : URhSi single crystal * magnetization * neutron diffraction * magnetic structure determination Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.910, year: 2003
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Aluminum-rich mesoporous MFI - type zeolite single crystals
DEFF Research Database (Denmark)
Kustova, Marina; Kustov, Arkadii; Christensen, Christina Hviid
2005-01-01
Zeolitcs are crystalline materials, which are widely used as solid acid catalysts and supports in many industrial processes. Recently, mesoporous MFI-type zeolite single crystals were synthesized by use of carbon particles as a mesopore template and sodium aluminate as the aluminum Source....... With this technique, only zeolites with relatively low Al contents were reported (Si/Al ratio about 100). In this work, the preparation of aluminum-rich mesoporous MFI-type zeolite single crystals (Si/Al similar to 16-50) using aluminum isopropoxide as the aluminum Source is reported for the first time. All samples...... are characterized by X-ray powder diffraction (XRD), scanning electron microscopy (SEM), ammonia temperature programmed desorption (NH3-TPD), and N-2 adsorption measurements. The obtained zeolites combine the high crystallinity and the characteristic micropores of zeolites with an intracrystalline mesopore system...
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Thermal stability of radiation-induced free radicals in γ-irradiated l-alanine single crystals
International Nuclear Information System (INIS)
Maltar-Strmecki, N.; Rakvin, B.
2005-01-01
Decay of the radiation-induced stable free radicals in l-alanine single crystals and powders at the temperatures from 379 to 476K was examined by electron paramagnetic resonance. For single crystals, the calculated activation energy of the radical decay is 104.3±1.7kJ/mol (i.e. 12 538+/-202K) and the frequency factor lnν 0 is 24.1±0.4min -1 . The lifetime of the radical in single crystals at 296K is 162 years. The results confirm the long-term stability of the radicals, but the decay was found to be faster in large crystals than in powders
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Directory of Open Access Journals (Sweden)
S. Reena Devi
2017-06-01
Full Text Available Organic single crystal of 2-aminopyridinium 2,4-dinitrophenolate single crystal was grown by slow evaporation technique. The cell parameters and space group (P were determined from single X-ray diffraction analysis. HRXRD studies ascertained the crystalline quality. UV-Visible and PL spectral studies revealed the emission in red region, transparency (75% cutoff wavelength around 440 nm respectively. The laser damage threshold of grown crystal was estimated by using Nd:YAG laser beam and these results were mutually related with specific heat capacity of the grown crystal. The third-order nonlinear optical parameters were estimated by Z-scan technique which is useful for optical applications.
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Crystal orientation mapping applied to the Y-TZP/WC composite
Faryna, M; Sztwiertnia, K
2002-01-01
Crystal orientation measurements made by electron backscattered diffraction (EBSD) in the scanning electron microscope (SEM) and microscopic observations provided the basis for a quantitative investigation of microstructure in an yttria stabilized, tetragonal zirconia-based (Y-TZP) composite. Automatic crystal orientation mapping (ACOM) in a SEM can be preferable to transmission electron microscopy (TEM) for microstructural characterization, since no sample thinning is required, extensive crystal data is already available, and the analysis area is greatly increased. A composite with a 20 vol.% tungsten carbide (WC) content was chosen since it revealed crystal relationships between the matrix and carbide phase already established by TEM analysis. However, this composite was difficult to investigate in the EBSD/ SEM since it is non-conductive, the Y-TZP grain size is of the order of the system resolution, and the sample surface, though carefully prepared, reveals a distinctive microtopography. In this paper, so...
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Kim, Jaekyun; Kang, Jingu; Cho, Sangho; Yoo, Byungwook; Kim, Yong-Hoon; Park, Sung Kyu
2014-11-01
High-performance microrod single crystal organic transistors based on a p-type 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) semiconductor are fabricated and the effects of grain boundaries on the carrier transport have been investigated. The spin-coating of C8-BTBT and subsequent solvent vapor annealing process enabled the formation of organic single crystals with high aspect ratio in the range of 10 - 20. It was found that the organic field-effect transistors (OFETs) based on these single crystals yield a field-effect mobility and an on/off current ratio of 8.04 cm2/Vs and > 10(5), respectively. However, single crystal OFETs with a kink, in which two single crystals are fused together, exhibited a noticeable drop of field-effect mobility, and we claim that this phenomenon results from the carrier scattering at the grain boundary.
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Energy Technology Data Exchange (ETDEWEB)
Pietrowski, S. [Instytut Inzynierii Materialowej i Technik Bezwiorowych, Politechnika Lodzka, Lodz (Poland)
1998-12-31
The aim of the presented paper is to show the results of examination of the crystallization process using the method of thermal-derivative analysis (ATD) and the structure examination of chromium cast iron, chromium molybdenum c. i. and chromium molybdenum nickel c.i. It was found that molybdenum in amount over 2 wt % causes the crystallization of eutectic carbides M{sub 23}C{sub 6} and M{sub 6}C. The M{sub 23}C{sub 6} carbide crystallizes upon the crystallization of eutectic carbides M{sub 3}C and M{sub 7}C{sub 3}. It is shown that ATD method facilitates both interpretation and control of the crystallization as well as formation of the cast iron structure at the solid state. (author) 14 refs, 16 figs, 5 tabs
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Modeling Nonlinear Elastic-plastic Behavior of RDX Single Crystals During Indentation
2012-01-01
single crystals has also been probed using shock experiments (6, 12) and molecular dynamics simulations (12–14). RDX undergoes a polymorphic phase...Patterson, J.; Dreger, Z.; Gupta, Y. Shock-wave Induced Phase Transition in RDX Single Crystals. J. Phys. Chem. B 2007, 111, 10897–10904. 17. Bedrov, D...and Volume Compression of β - HMX and RDX . In Proc. Int. Symp. High Dynamic Pressures; Commissariat a l’Energie Atomique: Paris, 1978; pp 3–8. 24
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Room temperature exchange bias in SmFeO_3 single crystal
International Nuclear Information System (INIS)
Wang, Xiaoxiong; Cheng, Xiangyi; Gao, Shang; Song, Junda; Ruan, Keqing; Li, Xiaoguang
2016-01-01
Exchange bias phenomenon is generally ascribed to the unidirectional magnetic shift along the field axes at interface of two magnetic materials. Room temperature exchange bias is found in SmFeO_3 single crystal. The behavior after different cooling procedure is regular, and the training behavior is attributed to the athermal training and its pinning origin is attributed to the antiferromagnetic clusters. Its being single phase and occurring at room temperature make it an appropriate candidate for application. - Graphical abstract: Room temperature exchange bias was found in oxide single crystal. Highlights: • Room temperature exchange bias has been discovered in single-crystalline SmFeO_3. • Its pinning origin is attributed to the antiferromagnetic clusters. • Its being single phase and occurring at room temperature make it an appropriate candidate for application.
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A diamond-anvil high-pressure cell for X-ray diffraction on a single crystal
International Nuclear Information System (INIS)
Malinowski, M.
1987-01-01
A new diamond-anvil high-pressure cell is described which can be used in single-crystal X-ray diffraction instruments to collect X-ray intensity data from single-crystal samples up to hydrostatic pressures of about 10 GPa. A unique design allows two types of diffraction geometry to be applied in single-crystal high-pressure diffraction experiments. More than 85% of the Ewald sphere is accessible, and a continuous range of 2θ values is available from 0 up to about 160 0 . Pressure may be calibrated by the ruby fluorescence technique or by the use of an internal X-ray-standard single crystal. The design of our diamond-anvil cell would allow, with little or no modification, operation at high and low temperatures, optical studies and powder diffractometer work. (orig.)
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Characteristics evaluation of stilbene single crystal grown by vertical bridgman technique
International Nuclear Information System (INIS)
Jo, Kwang Ho
2012-02-01
As the nature of organic scintillator, stilbene single crystal's decay time is only a couple of nano seconds, which makes it suitable for fast neutron detection. However, the entire amount of stilbene single crystal being used relies on import currently. As the necessity of fast neutron detection equipment such as KSTAR and Sodium-cooled Fast Reactor system increases, the goal is to have our own domestic technology through the growth of stilbene single crystal. The emission wavelength of grown stilbene single crystal is confirmed, and the property of grown stilbene single crystal is assessed compared to commercial stilbene (Ukraine ISMA research center) through gamma ray and neutron tests. In this research, we have grown stilbenes through Bridgman technique, and obtained three stilbenes out of two amples. (Two ones of Φ 30 mm x 15 mm, and Φ 40 mm x 17 mm from the first ample, and size of Φ 25 mm x 13 mm from the other) The grown stilbene's emission wavelength and inherent property of stilbene are confirmed. As the result of gamma ray test, we have confirmed linearity of grown stilbene's scintillator, and the relative light yield ratio is proven 101% efficiency to reference stilbene. Neutron detection efficiency of the three stilbenes amounts to 80% of reference stilbene, and FOM of them is 108% efficiency to reference stilbene's one. Although Ukraine ISMA research center still holds a dominant position with world-class efficiency and performance of its stilbene, we expect to produce a better stilbene with our domestic technology development. Through this, fast neutron detection technique can be obtained, which opens up an opportunity to be used not only in neutron monitoring system in nuclear fusion reactor, but also in alternative measurement technique as the unit price of He-3 increases recently
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Recent progress in large grain/single crystal high RRR niobium
International Nuclear Information System (INIS)
Ganapati Rao Myneni; Peter Kneisel; Tadeu Carneiro; S.R. Agnew; F. Stevie
2005-01-01
High RRR bulk niobium Superconducting Radio Frequency (SRF) cavity technology is chosen for the International Linear Collider (ILC). The SRF community was convinced until now that fine grain polycrystalline RRR niobium sheets obtained via forging and cross rolling are essential for forming the SRF Cavities. However, it was recently discovered under a joint Reference Metals Company, Inc., - JLAB CRADA that large grain/single crystal RRR niobium sliced directly from ingots is highly ductile reaching 100 percent elongation. This discovery led to the successful fabrication of several SRF single and/or multi cell structures, formed with sliced RRR discs from the ingots, operating at 2.3, 1.5 and 1.3 GHz. This new exciting development is expected to offer high performance accelerator structures not only at reduced costs but also with simpler fabrication and processing conditions. As a result there is a renewed interest in the evaluation and understanding of the large grain and single crystal niobium with respect to their mechanical and physical properties as well as the oxidation behavior and the influence of impurities such as hydrogen and Ta. In this paper the results of many collaborative studies on large grain and single crystal high RRR niobium between JLAB, Universities and Industry are presented
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Annealing behavior of solution grown polyethylene single crystals
Loos, J.; Tian, M.
2006-01-01
The morphology evolution of solution grown polyethylene single crystals has been studied upon annealing below their melting temperature by using atomic force microscopy (AFM). AFM investigations have been performed ex situ, which means AFM investigations at room temperature after the annealing
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Anisotropic charge transport in large single crystals of π-conjugated organic molecules.
Hourani, Wael; Rahimi, Khosrow; Botiz, Ioan; Koch, Felix Peter Vinzenz; Reiter, Günter; Lienerth, Peter; Heiser, Thomas; Bubendorff, Jean-Luc; Simon, Laurent
2014-05-07
The electronic properties of organic semiconductors depend strongly on the nature of the molecules, their conjugation and conformation, their mutual distance and the orientation between adjacent molecules. Variations of intramolecular distances and conformation disturb the conjugation and perturb the delocalization of charges. As a result, the mobility considerably decreases compared to that of a covalently well-organized crystal. Here, we present electrical characterization of large single crystals made of the regioregular octamer of 3-hexyl-thiophene (3HT)8 using a conductive-atomic force microscope (C-AFM) in air. We find a large anisotropy in the conduction with charge mobility values depending on the crystallographic orientation of the single crystal. The smaller conduction is in the direction of π-π stacking (along the long axis of the single crystal) with a mobility value in the order of 10(-3) cm(2) V(-1) s(-1), and the larger one is along the molecular axis (in the direction normal to the single crystal surface) with a mobility value in the order of 0.5 cm(2) V(-1) s(-1). The measured current-voltage (I-V) curves showed that along the molecular axis, the current followed an exponential dependence corresponding to an injection mode. In the π-π stacking direction, the current exhibits a space charge limited current (SCLC) behavior, which allows us to estimate the charge carrier mobility.
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Formation of oriented nitrides by N+ ion implantation in iron single crystals
International Nuclear Information System (INIS)
Costa, A.R.G.; Silva, R.C. da; Ferreira, L.P.; Carvalho, M.D.; Silva, C.; Franco, N.; Godinho, M.
2014-01-01
Iron single crystals were implanted with nitrogen at room temperature, with a fluence of 5×10 17 cm −2 and 50 keV energy, to produce iron nitride phases and characterize the influence of the crystal orientation. The stability and evolution of the nitride phases and diffusion of implanted nitrogen were studied as a function of successive annealing treatments at 250 °C in vacuum. The composition, structure and magnetic properties were characterized using RBS/channeling, X-Ray Diffraction, Magnetic Force Microscopy, Magneto-optical Kerr Effect and Conversion Electron Mössbauer Spectroscopy. In the as-implanted state the formation of Fe 2 N phase was clearly identified in all single crystals. This phase is not stable at 250 °C and annealing at this temperature promotes the formation of ε-Fe 3 N, or γ′-Fe 4 N, depending on the orientation of the substrate. - Highlights: • Oriented magnetic iron nitrides were obtained by nitrogen implantation into iron single crystals. • The stable magnetic nitride phase at 250 °C depends on the orientation of the host single crystal, being γ'-Fe 4 N or ε-Fe 3 N. • The easy magnetization axis was found to lay in the (100) plane for cubic γ'-Fe 4 N and out of (100) plane for hexagonal ε-Fe 3 N
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Growth and study of some gel grown group II single crystals of iodate
Indian Academy of Sciences (India)
Unknown
Abstract. Single crystals of calcium iodate and barium iodate were grown by simple gel technique by single diffusion method. The optimum conditions were established by varying various parameters such as pH of gel solution, gel concentration, gel setting time, concentration of the reactants etc. Crystals having different.
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Thermal shock cracking of GSO single crystal
International Nuclear Information System (INIS)
Miyazaki, Noriyuki; Yamamoto, Kazunari; Tamura, Takaharu; Kurashige, Kazuhisa; Ishibashi, Hiroyuki; Susa, Kenzo
1998-01-01
The quantitative estimation of the failure stress of a gadolinium orthosilicate (Gd 2 SiO 5 , hereafter abbreviated as GSO) single crystal due to thermal shock was investigated. A cylindrical test specimen was heated in a silicone oil bath, then subjected to thermal shock by pouring room temperature silicone oil. Cracking occurred during cooling. The heat conduction analysis was performed to obtain temperature distribution in a GSO single crystal at cracking, using the surface temperatures measured in the thermal shock cracking test. Then the thermal stress was calculated using temperature profile of the test specimen obtained from the heat conduction analysis. It is found from the results of the thermal stress analysis and the observation of the cracking in test specimens that the thermal shock cracking occurs in a cleavage plane due to the stress normal to the plane. Three-point bending tests were also performed to examine the relationship between the critical stress for thermal shock cracking and the three-point bending strength obtained from small-sized test specimens. (author)
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Nucleation of recrystallisation in castings of single crystal Ni-based superalloys
International Nuclear Information System (INIS)
Mathur, Harshal N.; Panwisawas, Chinnapat; Jones, C. Neil; Reed, Roger C.; Rae, Catherine M.F.
2017-01-01
Recrystallisation in single crystal Ni-based superalloys during solution heat treatment results in a significant cost to the investment casting industry. In this paper two sources of surface nucleation have been identified in the alloy CMSX-4 ® . Firstly, Electron Backscattered Diffraction (EBSD) has revealed micro-grains of γ′, between 2 and 30 μm diameter in the layer of surface eutectic found in the upper part of the casting. These have high angle boundaries with respect to the bulk single crystal and a fraction coarsen during solution heat treatment. Secondly, in the lower regions where surface eutectic does not form, locally deformed regions, 5–20 μm deep, form where the metal adheres to the mould. The local strain causes misorientations up to ≈20° with respect the bulk single crystal, and after heat treatment these regions develop into small grains of similar low-angle misorientations. However, they also form twins to produce further grains which have mobile high-angle boundaries with respect to the bulk single crystal. Experiments have shown that micro-grains at the surface grow to cause full recrystallisation where there is sufficient strain in the bulk material, and by removing these surface defects, recrystallisation can be completely mitigated. Etching of the cast surface is demonstrated to be an effective method of achieving this.
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Neutron-Phonon Interaction Studies in Copper, Zinc and Magnesium Single Crystals
International Nuclear Information System (INIS)
Maliszewski, E.; Sosnowski, J.; Blinowski, K.; Kozubowski, J.; Padlo, L.; Sledziewska, D.
1963-01-01
The phonon dispersion relations in copper single crystals has been studied by means of a triple-axis crystal neutron spectrometer. In the [100] direction the transversal branch, not reported in the papers of Cabie and Jacrot, has been found. This branch fits well to the recent data of sound velocity; however, it differs partly from the X-ray results of Jacobsen. For the longitudinal branch in the [100] direction the dispersion curve obtained by Cribier and Jacrot is lying well above the Jacobsen's curve, and the experimental points reported in the present paper support the results of Cribier and Jacrot. The phonon dispersion relations in zinc and magnesium single crystals has been studied using the cold neutron method and by means of a triple-axis crystal neutron spectrometer as well. The scattering surfaces in the [1010] plane were traced, the AT and AL branches found and the phonon dispersion relations in the [001] and [010] directions obtained. The results have been compared with those obtained by Johnson with X-rays. In the [001] direction the present results fit well lo Johnson's foe the AL branch. In the [010] direction for the AT branch a large discrepancy has been found between Johnson's and the present results. Some explanation of this discrepancy is given. Similar measurements in the same directions in magnesium single crystals are under way and will be reported. (author) [fr
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Growth and characterization of high-purity SiC single crystals
Augustine, G.; Balakrishna, V.; Brandt, C. D.
2000-04-01
High-purity SiC single crystals with diameter up to 50 mm have been grown by the physical vapor transport method. Finite element analysis was used for thermal modeling of the crystal growth cavity in order to reduce stress in the grown crystal. Crystals are grown in high-purity growth ambient using purified graphite furniture and high-purity SiC sublimation sources. Undoped crystals up to 50 mm in diameter with micropipe density less than 100 cm -2 have been grown using this method. These undoped crystals exhibit resistivities in the 10 3 Ω cm range and are p-type due to the presence of residual acceptor impurities, mainly boron. Semi-insulating SiC material is obtained by doping the crystal with vanadium. Vanadium has a deep donor level located near the middle of the band gap, which compensates the residual acceptor resulting in semi-insulating behavior.
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Angular and magnetic field dependences of critical current in irradiated YBaCuO single crystals
International Nuclear Information System (INIS)
Petrusenko, Yu.
2010-01-01
The investigation of mechanisms responsible for the current-carrying capability of irradiated high-temperature superconductors (HTSC) was realized. For the purpose, experiments were made to investigate the effect of point defects generated by high-energy electron irradiation on the critical temperature and the critical current in high-Tc superconducting single crystals YBa 2 Cu 3 O 7-x . The transport current density measured in HTSC single crystals YBa 2 Cu 3 O 7-x by the dc-method was found to exceed 80000 A/cm 2 . The experiments have demonstrated a more than 30-fold increase in the critical current density in single crystals irradiated with 2.5 MeV electrons to a dose of 3·10 18 el/cm 2 . Detailed studies were made into the anisotropy of critical current and the dependence of critical current on the external magnetic field strength in irradiated single crystals. A high efficiency of point defects as centers of magnetic vortex pinning in HTSC single crystals was first demonstrated.
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Energy Technology Data Exchange (ETDEWEB)
Pang, Judy W.L., E-mail: pangj@ornl.gov [Materials Science and Technology Division, Oak Ridge National Laboratory, 1 Behtel Valley Road, Oak Ridge, TN 37831 (United States); Ice, Gene E. [Materials Science and Technology Division, Oak Ridge National Laboratory, 1 Behtel Valley Road, Oak Ridge, TN 37831 (United States); Liu Wenjun [Advanced Photon Source, Argonne National Laboratory, Argonne, IL 60439 (United States)
2010-11-25
We report on novel 3D spatially resolved X-ray diffraction microscopy studies of self-affine behavior in deformed single crystals. This study extends surface profile measurements of self-affined morphology changes in single crystals during deformation to include local lattice rotations and sub-surface behavior. Investigations were made on the spatial correlation of the local lattice rotations in 8% tensile deformed Cu single crystals oriented with [1 2 3], [1 1 1] and [0 0 1] axes parallel to the tensile axis. The nondestructive depth-resolved measurements were made over a length scale of one to hundreds of micrometers. Self-affined correlation was found both at the surface and below the surface of the samples. A universal exponent for the power-law similar to that observed with surface profile methods is found at the surface of all samples but crystallographically sensitive changes are observed as a function of depth. Correlation lengths of the self-affine behavior vary with the [1 2 3] crystal exhibiting the longest self-affine length scale of 70 {mu}m with only 18 {mu}m for the [1 1 1] and [0 0 1] crystals. These measurements illuminate the transition from surface-like to bulk-like deformation behavior and provide new quantitative information to guide emerging models of self-organized structures in plasticity.
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Experimental study and numerical simulation of the plastic deformation of zirconium single crystals
International Nuclear Information System (INIS)
Lebon, C.
2011-01-01
There is only few experimental data in the literature on the zirconium single crystals and no constitutive laws for this single crystal material are provided. The goal of this work is then to create an experimental database like the Critical Resolved Shear Stress (CRSS) for the prismatic slip, the strain-hardening, the activation of the prismatic glide system and the activation volumes. We determine theses parameters from image correlation method. Then, we develop a new multi-scale approach using dislocations dynamics concept and finite element computations. Finally, a first single crystal constitutive law for the zirconium is proposed and a good agreement with the experimental data is obtained. (author) [fr
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Neutron monochromators of BeO, MgO and ZnO single crystals
Energy Technology Data Exchange (ETDEWEB)
Adib, M.; Habib, N. [Reactor Physics Department, NRC, AEAE, Cairo (Egypt); Bashter, I.I. [Physics Department, Faculty of Science, Zagazig University (Egypt); Morcos, H.N.; El-Mesiry, M.S. [Reactor Physics Department, NRC, AEAE, Cairo (Egypt); Mansy, M.S., E-mail: mohamedmansy_np@yahoo.com [Physics Department, Faculty of Science, Zagazig University (Egypt)
2014-05-21
The monochromatic features of BeO, MgO and ZnO single crystals are discussed in terms of orientation, mosaic spread, and thickness within the wavelength band from 0.05 up to 0.5 nm. A computer program MONO, written in “FORTRAN”, has been developed to carry out the required calculations. Calculation shows that a 5 mm thick MgO single crystal cut along its (2 0 0) plane having mosaic spread of 0.5° FWHM has the optimum parameters when it is used as a neutron monochromator. Moreover, at wavelengths shorter than 0.24 nm the reflected monochromatic neutrons are almost free from the higher order ones. The same features are seen with BeO (0 0 2) with less reflectivity than that of the former. Also, ZnO cut along its (0 0 2) plane is preferred over the others only at wavelengths longer than 0.20 nm. When the selected monochromatic wavelength is longer than 0.24 nm, the neutron intensities of higher orders from a thermal reactor flux are higher than those of the first-order one. For a cold reactor flux, the first order of BeO and MgO single crystals is free from the higher orders up to 0.4 nm, and ZnO at wavelengths up to 0.5 nm. - Highlights: • Monochromatic features of BeO, MgO and ZnO single crystals. • Calculations of neutron reflectivity using a computer program MONO. • Optimum mosaic spread, thickness and cutting plane of single crystals.
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Results on the Coherent Interaction of High Energy Electrons and Photons in Oriented Single Crystals
Apyan, A.; Badelek, B.; Ballestrero, S.; Biino, C.; Birol, I.; Cenci, P.; Connell, S.H.; Eichblatt, S.; Fonseca, T.; Freund, A.; Gorini, B.; Groess, R.; Ispirian, K.; Ketel, T.J.; Kononets, Yu.V.; Lopez, A.; Mangiarotti, A.; van Rens, B.; Sellschop, J.P.F.; Shieh, M.; Sona, P.; Strakhovenko, V.; Uggerhoj, E.; Uggerhj, Ulrik Ingerslev; Unel, G.; Velasco, M.; Vilakazi, Z.Z.; Wessely, O.; Kononets, Yu.V.
2005-01-01
The CERN-NA-59 experiment examined a wide range of electromagnetic processes for multi-GeV electrons and photons interacting with oriented single crystals. The various types of crystals and their orientations were used for producing photon beams and for converting and measuring their polarisation. The radiation emitted by 178 GeV unpolarised electrons incident on a 1.5 cm thick Si crystal oriented in the Coherent Bremsstrahlung (CB) and the String-of-Strings (SOS) modes was used to obtain multi-GeV linearly polarised photon beams. A new crystal polarimetry technique was established for measuring the linear polarisation of the photon beam. The polarimeter is based on the dependence of the Coherent Pair Production (CPP) cross section in oriented single crystals on the direction of the photon polarisation with respect to the crystal plane. Both a 1 mm thick single crystal of Germanium and a 4 mm thick multi-tile set of synthetic Diamond crystals were used as analyzers of the linear polarisation. A birefringence ...
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Dhavamurthy, M.; Peramaiyan, G.; Babu, K. Syed Suresh; Mohan, R.
2015-04-01
Organosulfur nonlinear optical single crystals of orthorhombic bis(guanidinium) 5-sulfosalicylate (2CH6N3 +·C7H4O6S2-·H2O) with dimension 14 mm × 4 mm × 5 mm have been grown from methanol and water solvents in 1:1 ratio by the slow evaporation growth technique. The crystal structure and morphology of the crystals have been studied by single-crystal X-ray diffraction. FTIR spectroscopic studies were carried out to identify the functional groups and vibrational modes present in the grown crystals. The UV-Vis spectrum was studied to analyze the linear optical properties of the grown crystals. The thermal gravimetric analysis was conducted on the grown crystals, and the result revealed that the grown crystal is thermally stable up to 65 °C. The dielectric tensor components ɛ 11, ɛ 22 and ɛ 33 of BG5SS crystal were evaluated as a function of frequency at 40 °C. The surface laser damage threshold for the grown crystal was measured using Nd:YAG laser. Further, Vickers micro-hardness study was carried out to analyze the mechanical strength of the grown crystals for various loads.
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Single crystal spectrometer FOX at KENS
International Nuclear Information System (INIS)
Takahashi, M.
2001-01-01
Single crystal spectrometer FOX installed at H1 thermal neutron line on KENS has been renewed recently for the measurement of very weak scattering. We have installed a multidetector system of 36 linearly placed 3 He detectors with collimators instead of former four-circle diffractometer and scintillator detectors. Though the system is quite simple, a large two-dimensional reciprocal space is observed effectively with high S/N rate on new FOX. (author)
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Narayanan, A.; Titus, J.; Rajagopalan, H.; Vippa, P.; Thakur, M.
2006-03-01
Single-crystal film of DAST (4'-dimethylamino-N-methyl-4-stilbazolium tosylate) has been shown [1] to have exceptionally large electro-optic coefficients (r11 ˜ 770 pm/V at 633 nm). In this report, single crystal film of a combination of materials (co-crystal) involving DAST and a dye molecule IR-125 will be discussed. Modified shear method was used to prepare the co-crystal films. The film has been characterized using polarized optical microscopy, optical absorption spectroscopy and x-ray diffraction. The optical absorption spectrum has two major bands: one at about 350--600 nm corresponding to DAST and the other at about 600-900 nm corresponding to IR-125. The x-ray diffraction results show peaks involving the presence of DAST and IR-125 within the co-crystal film. Since the co-crystal has strong absorption at longer wavelengths it is expected to show higher electro-optic coefficients at longer wavelengths. Preliminary measurements at 1.55 μm indicate a high electro-optic coefficient of the co-crystal film. [1] Swamy, Kutty, Titus, Khatavkar, Thakur, Appl. Phys. Lett. 2004, 85, 4025; Kutty, Thakur, Appl. Phys. Lett. 2005, 87, 191111.
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Low-leakage superconducting tunnel junctions with a single-crystal Al{sub 2}O{sub 3} barrier
Energy Technology Data Exchange (ETDEWEB)
Oh, S [National Institute of Standards and Technology, Boulder, CO 80305 (United States); Department of Physics, University of Illinois, Urbana, IL 61801 (United States); Cicak, K; Osborn, K D; Simmonds, R W; Pappas, D P [National Institute of Standards and Technology, Boulder, CO 80305 (United States); McDermott, R; Cooper, K B; Steffen, M; Martinis, J M [University of California, Santa Barbara, CA 93106 (United States)
2005-10-01
We have developed a two-step growth scheme for single-crystal Al{sub 2}O{sub 3} tunnel barriers. The barriers are epitaxially grown on single-crystal rhenium (Re) base electrodes that are grown epitaxially on a sapphire substrate, while polycrystalline Al is used as the top electrode. We show that by first growing an amorphous aluminium (Al) oxide layer at room temperature and crystallizing it at a high temperature in oxygen environment, a morphologically intact single-crystal Al{sub 2}O{sub 3} layer is obtained. Tunnel junctions fabricated from these trilayers show very low subgap leakage current. This single-crystal Al{sub 2}O{sub 3} junction may open a new venue for coherent quantum devices.
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Porous silicon carbide (SIC) semiconductor device
Shor, Joseph S. (Inventor); Kurtz, Anthony D. (Inventor)
1996-01-01
Porous silicon carbide is fabricated according to techniques which result in a significant portion of nanocrystallites within the material in a sub 10 nanometer regime. There is described techniques for passivating porous silicon carbide which result in the fabrication of optoelectronic devices which exhibit brighter blue luminescence and exhibit improved qualities. Based on certain of the techniques described porous silicon carbide is used as a sacrificial layer for the patterning of silicon carbide. Porous silicon carbide is then removed from the bulk substrate by oxidation and other methods. The techniques described employ a two-step process which is used to pattern bulk silicon carbide where selected areas of the wafer are then made porous and then the porous layer is subsequently removed. The process to form porous silicon carbide exhibits dopant selectivity and a two-step etching procedure is implemented for silicon carbide multilayers.
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Electronic transport properties of pentacene single crystals upon exposure to air
Jurchescu, OD; Baas, J; Palstra, TTM; Jurchescu, Oana D.
2005-01-01
We report the effect of air exposure on the electronic properties of pentacene single crystals. Air can diffuse reversibly in and out of the crystals and influences the physical properties. We discern two competing mechanisms that modulate the electronic transport. The presence of oxygen increases
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Crystallinity of the epitaxial heterojunction of C60 on single crystal pentacene
Tsuruta, Ryohei; Mizuno, Yuta; Hosokai, Takuya; Koganezawa, Tomoyuki; Ishii, Hisao; Nakayama, Yasuo
2017-06-01
The structure of pn heterojunctions is an important subject in the field of organic semiconductor devices. In this work, the crystallinity of an epitaxial pn heterojunction of C60 on single crystal pentacene is investigated by non-contact mode atomic force microscopy and high-resolution grazing incidence x-ray diffraction. Analysis shows that the C60 molecules assemble into grains consisting of single crystallites on the pentacene single crystal surface. The in-plane mean crystallite size exceeds 0.1 μm, which is at least five time larger than the size of crystallites deposited onto polycrystalline pentacene thin films grown on SiO2. The results indicate that improvement in the crystal quality of the underlying molecular substrate leads to drastic promotion of the crystallinity at the organic semiconductor heterojunction.
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Yao Xin; Shiohara, Y
2003-01-01
Sm sub 1 sub + sub x Ba sub 2 sub - sub x Cu sub 3 O sub z (SmBCO) single crystals were grown under atmospheric ambient by the top-seeded solution growth method. Inductively coupled plasma results indicate that there is negligible Sm substitution for Ba sites in the grown SmBCO crystals, although they crystallized from different Ba-Cu-O solvents with a wide composition range (Ba/Cu ratio of 0.5-0.6). As a result, these crystals show high superconducting critical transition temperature values (T sub c) of over 93 K with a sharp transition width after oxygenation. A large-sized crystal with an a-b plane of 23 x 22 mm sup 2 and a c-axis of 19 mm was obtained at a high growth rate of nearly 0.13 mm h sup - sup 1. In short, with more controllable thermodynamic parameters, SmBCO single crystals can readily achieve both large size and high superconducting properties. (rapid communication)
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Wrinkle-Free Single-Crystal Graphene Wafer Grown on Strain-Engineered Substrates.
Deng, Bing; Pang, Zhenqian; Chen, Shulin; Li, Xin; Meng, Caixia; Li, Jiayu; Liu, Mengxi; Wu, Juanxia; Qi, Yue; Dang, Wenhui; Yang, Hao; Zhang, Yanfeng; Zhang, Jin; Kang, Ning; Xu, Hongqi; Fu, Qiang; Qiu, Xiaohui; Gao, Peng; Wei, Yujie; Liu, Zhongfan; Peng, Hailin
2017-12-26
Wrinkles are ubiquitous for graphene films grown on various substrates by chemical vapor deposition at high temperature due to the strain induced by thermal mismatch between the graphene and substrates, which greatly degrades the extraordinary properties of graphene. Here we show that the wrinkle formation of graphene grown on Cu substrates is strongly dependent on the crystallographic orientations. Wrinkle-free single-crystal graphene was grown on a wafer-scale twin-boundary-free single-crystal Cu(111) thin film fabricated on sapphire substrate through strain engineering. The wrinkle-free feature of graphene originated from the relatively small thermal expansion of the Cu(111) thin film substrate and the relatively strong interfacial coupling between Cu(111) and graphene, based on the strain analyses as well as molecular dynamics simulations. Moreover, we demonstrated the transfer of an ultraflat graphene film onto target substrates from the reusable single-crystal Cu(111)/sapphire growth substrate. The wrinkle-free graphene shows enhanced electrical mobility compared to graphene with wrinkles.
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Orientation dependence of dispersion and band gap of PIMNT single crystals
He, Chongjun; Chen, Hongbing; Wang, Jiming; Gu, Xiaorong; Wu, Tong; Liu, Youwen
2018-01-01
As piezoelectric materials, optical properties of xPb(In1/2Nb1/2)O3-(1-x-y)Pb(Mg1/3Nb2/3)O3-yPbTiO3 single crystals were not perfectly known. Here refractive indices and optical transmission of 0.25Pb(In1/2Nb1/2)O3-0.42Pb(Mg1/3Nb2/3)O3- 0.33PbTiO3 (PIMNT) single crystal are investigated after poled along different directions. Cauchy dispersion equations of the refractive indices were obtained by least square fitting, which can be used to calculate the refractive indices in the low absorption wavelength range. After poled along [011] direction, the optical transmission of PIMNT single crystal is more than 65% above 0.5 μm, which is much higher than that of [001] and [111] directions. Energy band gap was obtained from absorption coefficient.
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Growth, structural, optical and surface analysis of piperazinium tartrate: A NLO single crystal
Gupta, Apurva; Raseel Rahman M., K.; Nair, Lekha
2018-05-01
Single crystal of piperazinium tartrate (PPZT) was grown by the slow evaporation solution growth technique at room temperature. Crystallinity of grown crystal was examined by powder X-ray diffraction. High transparency and wide band gap were observed in the UV-Visible spectroscopic studies. Intense and broad emissions were observed in the blue region, as that is indicated by photoluminescence spectroscopy. The quality of the grown PPZT single crystals were analyzed by the etching studies using the water as the etchant.
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Three-point bending fatigue behavior of WC–Co cemented carbides
International Nuclear Information System (INIS)
Li, Anhai; Zhao, Jun; Wang, Dong; Gao, Xinliang; Tang, Hongwei
2013-01-01
Highlights: ► Mechanical fatigue tests were conducted on a specific designed jig. ► Three-point bending fatigue behavior of WC–Co cemented carbides was studied. ► Fatigue mechanisms of WC–Co cemented carbides with different WC grain sizes and Co binder contents were revealed. -- Abstract: WC–Co cemented carbides with different WC grain sizes and Co binder contents were sintered and fabricated. The three-point bending specimens with a single edge notch were prepared for tests. In the experiments, the mechanical properties of materials were investigated under static and cyclic loads (20 Hz) in air at room temperature. The fatigue behaviors of the materials under the same applied loading conditions are presented and discussed. Optical microscope and scanning electron microscopy were used to investigate the micro-mechanisms of damage during fatigue, and the results were used to correlate with the mechanical fatigue behavior of WC–Co cemented carbides. Experimental results indicated that the fatigue fracture surfaces exhibited more fracture origins and diversification of crack propagation paths than the static strength fracture surfaces. The fatigue fracture typically originates from inhomogeneities or defects such as micropores or aggregates of WC grains near the notch tip. Moreover, due to the diversity and complexity of the fatigue mechanisms, together with the evolution of the crack tip and the ductile deformation zone, the fatigue properties of WC–Co cemented carbides were largely relevant with the combination of transverse rupture strength and fracture toughness, rather than only one of them. Transverse rupture strength dominated the fatigue behavior of carbides with low Co content, whilst the fatigue behavior of carbides with high Co content was determined by fracture toughness.
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Magnetostriction of Hexagonal HoMnO3 and YMnO3 Single Crystals
Pavlovskii, N. S.; Dubrovskii, A. A.; Nikitin, S. E.; Semenov, S. V.; Terent'ev, K. Yu.; Shaikhutdinov, K. A.
2018-03-01
We report on the magnetostriction of hexagonal HoMnO3 and YMnO3 single crystals in a wide range of applied magnetic fields (up to H = 14 T) at all possible combinations of the mutual orientations of magnetic field H and magnetostriction Δ L/L. The measured Δ L/L( H, T) data agree well with the magnetic phase diagram of the HoMnO3 single crystal reported previously by other authors. It is shown that the nonmonotonic behavior of magnetostriction of the HoMnO3 crystal is caused by the Ho3+ ion; the magnetic moment of the Mn3+ ion parallel to the hexagonal crystal axis. The anomalies established from the magnetostriction measurements of HoMnO3 are consistent with the phase diagram of these compounds. For the isostructural YMnO3 single crystal with a nonmagnetic rare-earth ion, the Δ L/L( H, T) dependences are described well by a conventional quadratic law in a wide temperature range (4-100 K). In addition, the magnetostriction effect is qualitatively estimated with regard to the effect of the crystal electric field on the holmium ion.
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Electrically-pumped, broad-area, single-mode photonic crystal lasers.
Zhu, Lin; Chak, Philip; Poon, Joyce K S; DeRose, Guy A; Yariv, Amnon; Scherer, Axel
2007-05-14
Planar broad-area single-mode lasers, with modal widths of the order of tens of microns, are technologically important for high-power applications and improved coupling efficiency into optical fibers. They may also find new areas of applications in on-chip integration with devices that are of similar size scales, such as for spectroscopy in microfluidic chambers or optical signal processing with micro-electromechanical systems. An outstanding challenge is that broad-area lasers often require external means of control, such as injection-locking or a frequency/spatial filter to obtain single-mode operation. In this paper, we propose and demonstrate effective index-guided, large-area, edge-emitting photonic crystal lasers driven by pulsed electrical current injection at the optical telecommunication wavelength of 1550 nm. By suitable design of the photonic crystal lattice, our lasers operate in a single mode with a 1/e(2) modal width of 25 microm and a length of 600 microm.
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Growth and characterization of lead-free (K,Na)NbO3-based piezoelectric single crystals
International Nuclear Information System (INIS)
Liu, Hairui
2016-01-01
Lead-free piezoelectric materials have received increasing attention in the last decade, driven by environmental issues and health concerns. Of considerable interest is the (K,Na)NbO 3 (KNN)-based system, which possesses a relatively high Curie temperature and good piezoelectric properties. Abundant publications on KNN-based polycrystalline ceramics increased the interest in studying their single-crystalline form, based on two major concerns. The first concern refers to the negative role of grain interactions on the electromechanical response. The second concern deals with domain engineering. The relationship between external electric field direction, crystallographic orientation, and spontaneous polarization vectors for a specific structure can be more readily established in single crystals and thus offers a pathway for an in-depth understanding of fundamental mechanism and potential applications. The exciting enhancement of both piezoelectric and ferroelectric response in lead-based single crystals also encourages the further exploration of KNN-based piezoelectric crystals, as they possess the same perovskite structure. The main goal of this thesis is to find possible approaches for improved electromechanical properties in KNN-based piezoelectric single crystals. In Chapter 2, the current development of KNN-based single crystals as piezoelectrics is reviewed, following a short introduction of fundamental knowledge on piezoelectrics and ferroelectrics. Both submerged-seed solution growth and top-seeded solution growth techniques were employed to produce single crystals, as described detailed in Chapter 3. Emphasis is subsequently placed on issues of the crystal growth process, effective methods to enhance electrical properties, and crystallographic orientation-dependent electrical properties in Li-, Ta-, and/or Sb-substituted KNN single crystals. The main conclusions from the crystal growth aspect are presented in Chapter 4 and can be summarized as follows: (i
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Linear, non-linear and thermal properties of single crystal of LHMHCl
Kulshrestha, Shobha; Shrivastava, A. K.
2018-05-01
The single crystal of amino acid of L-histidine monohydrochloride was grown by slow evaporation technique at room temperature. High optical quality and appropriate size of crystals were grown under optimized growth conditions. The grown crystals were transparent. Crystals are characterized with different characterizations such as Solubility test, UV-Visible, optical band gap (Eg). With the help of optical data to be calculate absorption coefficient (α), extinction coefficient (k), refractive index (n), dielectric constant (ɛ). These optical constants are shows favorable conditions for photonics devices. Second harmonic generation (NLO) test show the green light emission which is confirm that crystal have properties for laser application. Thermal stability of grown crystal is confirmed by TG/DTA.
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Growth and characterisation of lead iodide single crystals
International Nuclear Information System (INIS)
Tonn, Justus
2012-01-01
The work in hand deals with the growth and characterisation of lead iodide (PbI 2 ) single crystals. PbI 2 is regarded as a promising candidate for low-noise X- and gamma ray detection at room temperature. Its benefits if compared to conventional materials like HgI 2 , CdTe, Si, or GaAs lie in a band gap energy of 2.32 eV, an excellent ability to absorb radiation, and a high electrical resistivity. For an application of PbI 2 as detector material the growth and characterisation of crystals with high chemical and structural quality is extremely challenging. In light of this, the effectiveness of zone purification of the PbI 2 used for crystal growth was confirmed by spectroscopic analysis. Furthermore, technological aspects during processing of purified PbI 2 were investigated. With the help of thermal analysis, a correlation was found between the degree of exposing the source material to oxygen from the air and the structural quality of the resulting crystals. A hydrogen treatment was applied to PbI 2 as an effective method for the removal of oxidic pollutions, which resulted in a significant reduction of structural defects like polytypic growth and stress-induced cracking. The growth of PbI 2 single crystals was, among others, carried out by the Bridgman-Stockbarger method. In this context, much effort was put on the investigation of influences resulting from the design and preparation of ampoules. For the first time, crystal growth of PbI 2 was also carried out by the Czochralski method. If compared to the Bridgman-Stockbarger method, the Czochralski technique allowed a significantly faster growth of nearly crack-free crystals with a reproducible predetermination of crystallographic orientation. By an optimised sample preparation of PbI 2 , surface orientations perpendicular to the usually cleaved (0001) plane were realised. It is now possible to determine the material properties along directions which were so far not accessible. Thus, for example, the ratio of
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Advances in the Growth and Characterization of Relaxor-PT-Based Ferroelectric Single Crystals
Directory of Open Access Journals (Sweden)
Jun Luo
2014-07-01
Full Text Available Compared to Pb(Zr1−xTixO3 (PZT polycrystalline ceramics, relaxor-PT single crystals offer significantly improved performance with extremely high electromechanical coupling and piezoelectric coefficients, making them promising materials for piezoelectric transducers, sensors and actuators. The recent advances in crystal growth and characterization of relaxor-PT-based ferroelectric single crystals are reviewed in this paper with emphases on the following topics: (1 the large crystal growth of binary and ternary relaxor-PT-based ferroelectric crystals for commercialization; (2 the composition segregation in the crystals grown from such a solid-solution system and possible solutions to reduce it; (3 the crystal growth from new binary and ternary compositions to expand the operating temperature and electric field; (4 the crystallographic orientation dependence and anisotropic behaviors of relaxor-PT-based ferroelectriccrystals; and (5 the characterization of the dielectric, elastic and piezoelectric properties of the relaxor-PT-based ferroelectriccrystals under small and large electric fields.
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Growth of rare-earth doped single crystal yttrium aluminum garnet fibers
Bera, Subhabrata; Nie, Craig D.; Harrington, James A.; Cheng, Long; Rand, Stephen C.; Li, Yuan; Johnson, Eric G.
2018-02-01
Rare-earth doped single crystal (SC) yttrium aluminum garnet (YAG) fibers have great potential as high-power laser gain media. SC fibers combine the superior material properties of crystals with the advantages of a fiber geometry. Improving processing techniques, growth of low-loss YAG SC fibers have been reported. A low-cost technique that allows for the growth of optical quality Ho:YAG single crystal (SC) fibers with different dopant concentrations have been developed and discussed. This technique is a low-cost sol-gel based method which offers greater flexibility in terms of dopant concentration. Self-segregation of Nd ions in YAG SC fibers have been observed. Such a phenomenon can be utilized to fabricate monolithic SC fibers with graded index.
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Doping of silicon carbide by ion implantation
International Nuclear Information System (INIS)
Gimbert, J.
1999-01-01
It appeared that in some fields, as the hostile environments (high temperature or irradiation), the silicon compounds showed limitations resulting from the electrical and mechanical properties. Doping of 4H and 6H silicon carbide by ion implantation is studied from a physicochemical and electrical point of view. It is necessary to obtain n-type and p-type material to realize high power and/or high frequency devices, such as MESFETs and Schottky diodes. First, physical and electrical properties of silicon carbide are presented and the interest of developing a process technology on this material is emphasised. Then, physical characteristics of ion implantation and particularly classical dopant implantation, such as nitrogen, for n-type doping, and aluminium and boron, for p-type doping are described. Results with these dopants are presented and analysed. Optimal conditions are extracted from these experiences so as to obtain a good crystal quality and a surface state allowing device fabrication. Electrical conduction is then described in the 4H and 6H-SiC polytypes. Freezing of free carriers and scattering processes are described. Electrical measurements are carried out using Hall effect on Van der Panw test patterns, and 4 point probe method are used to draw the type of the material, free carrier concentrations, resistivity and mobility of the implanted doped layers. These results are commented and compared to the theoretical analysis. The influence of the technological process on electrical conduction is studied in view of fabricating implanted silicon carbide devices. (author)
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Study of photoluminescence from annealed bulk-ZnO single crystals
Energy Technology Data Exchange (ETDEWEB)
Yoneta, M.; Ohishi, M.; Saito, H. [Department of Applied Physics, Okayama University of Science, 1-1 Ridai-cho, Okayama 700-0005 (Japan); Yoshino, K. [Department of Electrical and Electronic Engineering, Miyazaki University, 1-1 Gakuen Kibanadai-nishi, Miyazaki 889-2192 (Japan); Honda, M. [Faculty of Science, Naruto University of Education, 748 Nakajima, Takashima, Naruto-cho, Naruto-shi 772-8502 (Japan)
2006-03-15
We have investigated the influence of rapid thermal annealing on the photoluminescence of bulk-ZnO single crystal. As-grown ZnO wafer, illuminated by 325 nm ultraviolet light at 4.2 K, emitted the visible luminescence of pale green centered of 2.29 eV. The luminescence was observed by the anneal at the temperature range between 400 C and 1000 C, however, its intensity decreased with anneal temperature. The free-exciton and the 2.18 eV emission line were obtained by the anneal at 1200 C for 60 sec. From the X-ray diffraction and the surface morphology measurements, the improvement of the crystallinity of bulk-ZnO crystal were confirmed. We suggest that a rapid thermal annealing technique is convenience to improve the the quality of bul-ZnO single crystals. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)
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Synthesis and single crystal X-ray analysis of two griseofulvin metabolites
DEFF Research Database (Denmark)
Rønnest, Mads Holger; Harris, Pernille; Gotfredsen, Charlotte Held
2010-01-01
The two phenols, 6-O-desmethyl griseofulvin and 4-O-desmethyl griseofulvin are metabolites of the antifungal drug griseofulvin. Herein, we present an improved synthesis of the 6-phenol derivative, and an unequivocal proof of both structures by single-crystal X-ray analysis.......The two phenols, 6-O-desmethyl griseofulvin and 4-O-desmethyl griseofulvin are metabolites of the antifungal drug griseofulvin. Herein, we present an improved synthesis of the 6-phenol derivative, and an unequivocal proof of both structures by single-crystal X-ray analysis....
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Orientation dependence of the thermal fatigue of nickel alloy single crystals
Energy Technology Data Exchange (ETDEWEB)
Dul' nev, R A; Svetlov, I L; Bychkov, N G; Rybina, T V; Sukhanov, N N
1988-11-01
The orientation dependence of the thermal stability and the thermal fatigue fracture characteristics of single crystals of MAR-M200 nickel alloy are investigated experimentally using X-ray diffraction analysis and optical and scanning electron microscopy. It is found that specimens with the 111-line orientation have the highest thermal stability and fatigue strength. Under similar test conditions, the thermal fatigue life of single crystals is shown to be a factor of 1.5-2 higher than that of the directionally solidified and equiaxed alloys. 6 references.
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Silicon carbide transparent chips for compact atomic sensors
Huet, L.; Ammar, M.; Morvan, E.; Sarazin, N.; Pocholle, J.-P.; Reichel, J.; Guerlin, C.; Schwartz, S.
2017-11-01
Atom chips [1] are an efficient tool for trapping, cooling and manipulating cold atoms, which could open the way to a new generation of compact atomic sensors addressing space applications. This is in particular due to the fact that they can achieve strong magnetic field gradients near the chip surface, hence strong atomic confinement at moderate electrical power. However, this advantage usually comes at the price of reducing the optical access to the atoms, which are confined very close to the chip surface. We will report at the conference experimental investigations showing how these limits could be pushed farther by using an atom chip made of a gold microcircuit deposited on a single-crystal Silicon Carbide (SiC) substrate [2]. With a band gap energy value of about 3.2 eV at room temperature, the latter material is transparent at 780nm, potentially restoring quasi full optical access to the atoms. Moreover, it combines a very high electrical resistivity with a very high thermal conductivity, making it a good candidate for supporting wires with large currents without the need of any additional electrical insulation layer [3].
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Plasma spraying of zirconium carbide – hafnium carbide – tungsten cermets
Czech Academy of Sciences Publication Activity Database
Brožek, Vlastimil; Ctibor, Pavel; Cheong, D.-I.; Yang, S.-H.
2009-01-01
Roč. 9, č. 1 (2009), s. 49-64 ISSN 1335-8987 Institutional research plan: CEZ:AV0Z20430508 Keywords : Plasma spraying * cermet coatings * microhardness * zirconium carbide * hafnium carbide * tungsten * water stabilized plasma Subject RIV: JH - Ceramics, Fire-Resistant Materials and Glass
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Ultralow Self-Doping in 2D Hybrid Perovskite Single Crystals
Peng, Wei; Yin, Jun; Ho, Kang-Ting; Ouellette, Olivier; de Bastiani, Michele; Banavoth, Murali; El Tall, Omar; Shen, Chao; Miao, Xiaohe; Pan, Jun; Alarousu, Erkki; He, Jr-Hau; Ooi, Boon S.; Mohammed, Omar F.; Sargent, Edward H.; Bakr, Osman
2017-01-01
-processed semiconductors, including hybrid perovskites, which are usually high in defects due to rapid crystallization. Here, we uncover extremely low self-doping concentrations in single crystals of (C6H5C2H4NH3)2PbI4･(CH3NH3PbI3)n-1 (n=1, 2, and 3)—over three orders
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Monte Carlo Modelling of Single-Crystal Diffuse Scattering from Intermetallics
Directory of Open Access Journals (Sweden)
Darren J. Goossens
2016-02-01
Full Text Available Single-crystal diffuse scattering (SCDS reveals detailed structural insights into materials. In particular, it is sensitive to two-body correlations, whereas traditional Bragg peak-based methods are sensitive to single-body correlations. This means that diffuse scattering is sensitive to ordering that persists for just a few unit cells: nanoscale order, sometimes referred to as “local structure”, which is often crucial for understanding a material and its function. Metals and alloys were early candidates for SCDS studies because of the availability of large single crystals. While great progress has been made in areas like ab initio modelling and molecular dynamics, a place remains for Monte Carlo modelling of model crystals because of its ability to model very large systems; important when correlations are relatively long (though still finite in range. This paper briefly outlines, and gives examples of, some Monte Carlo methods appropriate for the modelling of SCDS from metallic compounds, and considers data collection as well as analysis. Even if the interest in the material is driven primarily by magnetism or transport behaviour, an understanding of the local structure can underpin such studies and give an indication of nanoscale inhomogeneity.
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Single-Crystal Diffraction from Two-Dimensional Block Copolymer Arrays
International Nuclear Information System (INIS)
Stein, G. E.; Kramer, E. J.; Li, X.; Wang, J.
2007-01-01
The structure of oriented 2D block copolymer single crystals is characterized by grazing-incidence small-angle x-ray diffraction, demonstrating long-range sixfold orientational order. From line shape analysis of the higher-order Bragg diffraction peaks, we determine that translational order decays algebraically with a decay exponent η=0.2, consistent with the Kosterlitz-Thouless-Halperin-Nelson-Young theory for a 2D crystal with a shear modulus μ=2x10 -4 N/m
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The Taylor relation in compression deformed Ge single crystals
International Nuclear Information System (INIS)
Nyilas, K; Ungar, T; Dupas, C; Martin, J L; Kruml, T
2010-01-01
Ge single crystals are deformed in compression at 850K and the same strain rate to various extents of strains. In each sample, the internal stress is measured through stress reduction tests and the dislocation densities by X-ray measurements. Data about these two parameters follow fairly well the Taylor-Saada relation, provided a correction term is added. It probably corresponds to dislocations which are seen by X-rays, though they do not contribute to crystal hardening.
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Preparation of HfC single crystals by a floating zone technique
International Nuclear Information System (INIS)
Otani, S.; Tanaka, T.
1981-01-01
HfC single crystals have been prepared using a floating zone technique by controlling the compositions of the initial molten zone and the feed rod. The obtained crystal rods were 6 cm long and 0.9 cm in diameter. The various parts of the crystal rods have nearly constant compositions (C/Hf(ZR) = 0.956-0.977), and do not contain any free carbon. The impurities in the crystal, evaporation product, and starting material were examined by fluorescence X-ray spectroscopy. The refining effect due to evaporation was discussed. (orig.)
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Structural Characterization of Doped GaSb Single Crystals by X-ray Topography
Energy Technology Data Exchange (ETDEWEB)
Honnicke, M.G.; Mazzaro, I.; Manica, J.; Benine, E.; M da Costa, E.; Dedavid, B. A.; Cusatis, C.; Huang, X. R.
2009-09-13
We characterized GaSb single crystals containing different dopants (Al, Cd and Te), grown by the Czochralski method, by x-ray topography and high angular resolution x-ray diffraction. Lang topography revealed dislocations parallel and perpendicular to the crystal's surface. Double-crystal GaSb 333 x-ray topography shows dislocations and vertical stripes than can be associated with circular growth bands. We compared our high-angular resolution x-ray diffraction measurements (rocking curves) with the findings predicted by the dynamical theory of x-ray diffraction. These measurements show that our GaSb single crystals have a relative variation in the lattice parameter ({Delta}d/d) on the order of 10{sup -5}. This means that they can be used as electronic devices (detectors, for example) and as x-ray monochromators.
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Correlative microscopy of a carbide-free bainitic steel.
Hofer, Christina; Bliznuk, Vitaliy; Verdiere, An; Petrov, Roumen; Winkelhofer, Florian; Clemens, Helmut; Primig, Sophie
2016-02-01
In this work a carbide-free bainitic steel was examined by a novel correlative microscopy approach using transmission Kikuchi diffraction (TKD) and transmission electron microscopy (TEM). The individual microstructural constituents could be identified by TKD based on their different crystal structure for bainitic ferrite and retained austenite and by image quality for the martensite-austenite (M-A) constituent. Subsequently, the same area was investigated in the TEM and a good match of these two techniques regarding the identification of the area position and crystal orientation could be proven. Additionally, the M-A constituent was examined in the TEM for the first time after preceded unambiguous identification using a correlative microscopy approach. The selected area diffraction pattern showed satellites around the main reflexes which might indicate a structural modulation. Copyright © 2015 Elsevier Ltd. All rights reserved.
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Twinning behavior in the Ti-5at.% Al single crystals during cyclic loading along [0001
International Nuclear Information System (INIS)
Xiao Lin
2005-01-01
Cyclic deformation behavior of Ti-5at.% Al single crystals subjected to pull-push cyclic load along [0001] crystallographic orientation was studied. A higher cyclic stress response was displayed in the Ti-5Al single crystal oriented for [0001] than that oriented for single prism slip. Optical microscopy and transmission electron microscopy examinations show that twinning is a dominant plastic deformation mode in the single crystals during cycling. Trace analysis of prepolished surfaces was used to identify the twin systems primarily responsible for deformation. The major twin type observed was {101-bar 2}, {112-bar 2}, {101-bar 1} and {112-bar 1}. slip was observed in the neighboring region of twins in the fatigued specimens. The activation of multiple twinning systems contributed to the higher cyclic saturation stress in Ti-5Al single crystals oriented for [0001
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A High-Rate, Single-Crystal Model including Phase Transformations, Plastic Slip, and Twinning
Energy Technology Data Exchange (ETDEWEB)
Addessio, Francis L. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States). Theoretical Division; Bronkhorst, Curt Allan [Los Alamos National Lab. (LANL), Los Alamos, NM (United States). Theoretical Division; Bolme, Cynthia Anne [Los Alamos National Lab. (LANL), Los Alamos, NM (United States). Explosive Science and Shock Physics Division; Brown, Donald William [Los Alamos National Lab. (LANL), Los Alamos, NM (United States). Materials Science and Technology Division; Cerreta, Ellen Kathleen [Los Alamos National Lab. (LANL), Los Alamos, NM (United States). Materials Science and Technology Division; Lebensohn, Ricardo A. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States). Materials Science and Technology Division; Lookman, Turab [Los Alamos National Lab. (LANL), Los Alamos, NM (United States). Theoretical Division; Luscher, Darby Jon [Los Alamos National Lab. (LANL), Los Alamos, NM (United States). Theoretical Division; Mayeur, Jason Rhea [Los Alamos National Lab. (LANL), Los Alamos, NM (United States). Theoretical Division; Morrow, Benjamin M. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States). Materials Science and Technology Division; Rigg, Paulo A. [Washington State Univ., Pullman, WA (United States). Dept. of Physics. Inst. for Shock Physics
2016-08-09
An anisotropic, rate-dependent, single-crystal approach for modeling materials under the conditions of high strain rates and pressures is provided. The model includes the effects of large deformations, nonlinear elasticity, phase transformations, and plastic slip and twinning. It is envisioned that the model may be used to examine these coupled effects on the local deformation of materials that are subjected to ballistic impact or explosive loading. The model is formulated using a multiplicative decomposition of the deformation gradient. A plate impact experiment on a multi-crystal sample of titanium was conducted. The particle velocities at the back surface of three crystal orientations relative to the direction of impact were measured. Molecular dynamics simulations were conducted to investigate the details of the high-rate deformation and pursue issues related to the phase transformation for titanium. Simulations using the single crystal model were conducted and compared to the high-rate experimental data for the impact loaded single crystals. The model was found to capture the features of the experiments.
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International Nuclear Information System (INIS)
Agamaliyev, Z.A.; Tahirov, V.I.; Hasanov, Z.Y.; Quliyev, A.F.
2007-01-01
A binary solid solution single crystal growth method has been worked out. Cylinder feeding alloy with complex content distribution and truncated cone crucible are used. Second component distribution coefficient is more than unit. Content distribution along grown crystal is found by solving continuity equation. After reaching dynamic equilibrium state second component concentration in grown crystal is saturated the value of which is less than the average ona in the feeding alloy. Using the method Ge-Si perfect single crystals has been grown. Calculation method of melt surface displacement velocity has been offered as well
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Characteristics of trapped electrons and electron traps in single crystals
International Nuclear Information System (INIS)
Budzinski, E.E.; Potter, W.R.; Potienko, G.; Box, H.C.
1979-01-01
Two additional carbohydrates are reported whose crystal structures trap electrons intermolecularly in single crystals x irradiated at low temperature, namely sucrose and rhamnose. Five carbohydrate and polyhydroxy compounds are now known which exhibit this phenomenon. The following characteristics of the phenomenon were investigated: (1) the hyperfine couplings of the electron with protons of the polarized hydroxy groups forming the trap; (2) the distances between these protons and the trapped electron; (3) the spin density of the electron at the protons and (4) the relative stabilities of the electron trapped in various crystal structures
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Probing the crossover in CO desorption from single crystal to nanoparticulate Ru model catalysts
DEFF Research Database (Denmark)
Murphy, Shane; Strebel, Christian Ejersbo; Vendelbo, Søren Bastholm
2011-01-01
Crossover in CO desorption behavior and nanoscale structure probed with STM from ruthenium single crystals to PVD and mass-selected nanoparticles.......Crossover in CO desorption behavior and nanoscale structure probed with STM from ruthenium single crystals to PVD and mass-selected nanoparticles....
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Metal Carbides for Biomass Valorization
Directory of Open Access Journals (Sweden)
Carine E. Chan-Thaw
2018-02-01
Full Text Available Transition metal carbides have been utilized as an alternative catalyst to expensive noble metals for the conversion of biomass. Tungsten and molybdenum carbides have been shown to be effective catalysts for hydrogenation, hydrodeoxygenation and isomerization reactions. The satisfactory activities of these metal carbides and their low costs, compared with noble metals, make them appealing alternatives and worthy of further investigation. In this review, we succinctly describe common synthesis techniques, including temperature-programmed reaction and carbothermal hydrogen reduction, utilized to prepare metal carbides used for biomass transformation. Attention will be focused, successively, on the application of transition metal carbide catalysts in the transformation of first-generation (oils and second-generation (lignocellulose biomass to biofuels and fine chemicals.
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Non-destructive local determination of doping additions and main components in single crystals
International Nuclear Information System (INIS)
Ehksperiandova, L.P.; Blank, A.B.; Kukhtina, N.N.; Afanasiadi, L.I.
1994-01-01
Procedures for local non-destructive determination of elements in optical and scintillation single crystals are developed. They are applied for determination of the main components (in cadmium tungstate) and doping additions (tellurium in zinc selenide, europium in gadolinium silicate). The metrological characteristics of the developed micro-analysis methods are estimated. Segregation of the main components and doping additions in the objects under consideration are investigated. Tellurium is found to be distributed uniformly on the cross-sections of bulk zinc selenide single crystals. The segregation of europium along gadolinium silicate ingots is almost absent. On the cross-section surface of cadmium tungstate single crystals the microregions are found characterized by the prevailing contents of cadmium or tungsten
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Low trap-state density and long carrier diffusion in organolead trihalide perovskite single crystals
Shi, Dong
2015-01-29
The fundamental properties and ultimate performance limits of organolead trihalide MAPbX3(MA = CH3NH3 +; X = Br- or I- ) perovskites remain obscured by extensive disorder in polycrystalline MAPbX3 films. We report an antisolvent vapor-assisted crystallization approach that enables us to create sizable crack-free MAPbX3 single crystals with volumes exceeding 100 cubic millimeters. These large single crystals enabled a detailed characterization of their optical and charge transport characteristics.We observed exceptionally low trap-state densities on the order of 109 to 1010 per cubic centimeter in MAPbX3 single crystals (comparable to the best photovoltaic-quality silicon) and charge carrier diffusion lengths exceeding 10 micrometers. These results were validated with density functional theory calculations.
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Low trap-state density and long carrier diffusion in organolead trihalide perovskite single crystals
Shi, Dong; Adinolfi, Valerio; Comin, Riccardo; Yuan, Mingjian; Alarousu, Erkki; Buin, Andrei K.; Chen, Yin; Hoogland, Sjoerd H.; Rothenberger, Alexander; Katsiev, Khabiboulakh; Losovyj, Yaroslav B.; Zhang, Xin; Dowben, Peter A.; Mohammed, Omar F.; Sargent, E. H.; Bakr, Osman
2015-01-01
The fundamental properties and ultimate performance limits of organolead trihalide MAPbX3(MA = CH3NH3 +; X = Br- or I- ) perovskites remain obscured by extensive disorder in polycrystalline MAPbX3 films. We report an antisolvent vapor-assisted crystallization approach that enables us to create sizable crack-free MAPbX3 single crystals with volumes exceeding 100 cubic millimeters. These large single crystals enabled a detailed characterization of their optical and charge transport characteristics.We observed exceptionally low trap-state densities on the order of 109 to 1010 per cubic centimeter in MAPbX3 single crystals (comparable to the best photovoltaic-quality silicon) and charge carrier diffusion lengths exceeding 10 micrometers. These results were validated with density functional theory calculations.
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Multiphysical simulation analysis of the dislocation structure in germanium single crystals
Podkopaev, O. I.; Artemyev, V. V.; Smirnov, A. D.; Mamedov, V. M.; Sid'ko, A. P.; Kalaev, V. V.; Kravtsova, E. D.; Shimanskii, A. F.
2016-09-01
To grow high-quality germanium crystals is one of the most important problems of growth industry. The dislocation density is an important parameter of the quality of single crystals. The dislocation densities in germanium crystals 100 mm in diameter, which have various shapes of the side surface and are grown by the Czochralski technique, are experimentally measured. The crystal growth is numerically simulated using heat-transfer and hydrodynamics models and the Alexander-Haasen dislocation model in terms of the CGSim software package. A comparison of the experimental and calculated dislocation densities shows that the dislocation model can be applied to study lattice defects in germanium crystals and to improve their quality.
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Detonation Synthesis of Alpha-Variant Silicon Carbide
Langenderfer, Martin; Johnson, Catherine; Fahrenholtz, William; Mochalin, Vadym
2017-06-01
A recent research study has been undertaken to develop facilities for conducting detonation synthesis of nanomaterials. This process involves a familiar technique that has been utilized for the industrial synthesis of nanodiamonds. Developments through this study have allowed for experimentation with the concept of modifying explosive compositions to induce synthesis of new nanomaterials. Initial experimentation has been conducted with the end goal being synthesis of alpha variant silicon carbide (α-SiC) in the nano-scale. The α-SiC that can be produced through detonation synthesis methods is critical to the ceramics industry because of a number of unique properties of the material. Conventional synthesis of α-SiC results in formation of crystals greater than 100 nm in diameter, outside nano-scale. It has been theorized that the high temperature and pressure of an explosive detonation can be used for the formation of α-SiC in the sub 100 nm range. This paper will discuss in detail the process development for detonation nanomaterial synthesis facilities, optimization of explosive charge parameters to maximize nanomaterial yield, and introduction of silicon to the detonation reaction environment to achieve first synthesis of nano-sized alpha variant silicon carbide.
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Spectroscopic and crystallographic studies of YAG:Pr4+ single crystals
International Nuclear Information System (INIS)
Pawlak, D.; Frukacz, Z.; Mierczyk, Z.; Suchocki, A.; Zachara, J.
1998-01-01
Y 3 Al 5 O 12 single crystals doped with praseodymium and magnesium ions have been prepared. The reversible color change of this crystal is observed when annealing in oxidizing or reducing atmospheres. The change is ascribed to the formation of Pr 4+ in the as-grown crystal, caused by the second dopant, Mg 2+ . The absorption spectra of YAG:Pr,Mg in the range 200-1100 nm, as grown and annealed in air and H 2 /N 2 atmosphere, are presented and discussed. Additional broad absorption bands are observed for the as-grown crystals and those annealed in oxidizing atmosphere. Crystallographic investigations of the original crystal and after annealing in a reducing atmosphere as described above, show no distinct structural differences. A redox mechanism is proposed to explain the color change during annealing. (orig.)
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Growth of tourmaline single crystals containing transition metal elements in hydrothermal solutions
Setkova, Tatiana; Shapovalov, Yury; Balitsky, Vladimir
2011-03-01
Interest in the growth of tourmaline single crystals is based on the promising piezoelectric and pyroelectric properties of this material compared to quartz crystals currently in use. Moreover, synthetic tourmaline can be used as a substitute for the natural stone in the jewelry industry similar to other synthetic analogues of gemstones. Single crystals of colored Co-, Ni-, Fe-, (Ni,Cr)-, (Ni,Fe)-, and (Co,Ni,Cr)-containing tourmalines with concentration of transition metal elements up to 16 wt% on a seed have been grown from complex boron-containing hydrothermal solutions at a range of temperatures 400-750 °C and pressures 100 MPa. Experiments were conducted under conditions of a thermal gradient in titanium and chromium-nickel autoclaves. Tourmaline growth on a seed crystal occurs only if separate tourmaline-forming components (monocrystalline corundum and quartz bars) are used as charge. All tourmalines specified above grow in analogous (+) direction of the optical axis with a speed of 0.05 mm/day by faces of the trigonal pyramid, except tourmalines containing chromium. They grow in analogous (+0001) direction with a speed 0.05 mm/day, and in antilogous (-0001) direction with a speed of 0.01 mm/day by faces of the trigonal pyramid and in prism direction with a speed of 0.001 mm/day. Along with the large single crystals, a great amount of finest (30-150 μm in size) tourmaline crystals was formed during the runs by spontaneous nucleation both on the surface of the seed crystals and in the charge.
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Babu Rao, G.; P., Rajesh; Ramasamy, P.
2018-04-01
The 0.1 mol% amaranth added KAP single crystals were grown from aqueous solutions by both slow evaporation solution technique and Sankaranarayanan-Ramasamy method. The single crystal having dimension of 45 mm length and 12 mm diameter was grown with growth rate of 1.5 mm/day using SR method. 87 % transmittance is obtained for SR method grown amaranth added KAP single crystal. The high intense luminescence at 661 nm is obtained from amaranth added conventional and SR method grown KAP single crystal. The amaranth added KAP single crystal possesses good mechanical and laser damage threshold stability.
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Computational Modeling of Photonic Crystal Microcavity Single-Photon Emitters
Saulnier, Nicole A.
Conventional cryptography is based on algorithms that are mathematically complex and difficult to solve, such as factoring large numbers. The advent of a quantum computer would render these schemes useless. As scientists work to develop a quantum computer, cryptographers are developing new schemes for unconditionally secure cryptography. Quantum key distribution has emerged as one of the potential replacements of classical cryptography. It relics on the fact that measurement of a quantum bit changes the state of the bit and undetected eavesdropping is impossible. Single polarized photons can be used as the quantum bits, such that a quantum system would in some ways mirror the classical communication scheme. The quantum key distribution system would include components that create, transmit and detect single polarized photons. The focus of this work is on the development of an efficient single-photon source. This source is comprised of a single quantum dot inside of a photonic crystal microcavity. To better understand the physics behind the device, a computational model is developed. The model uses Finite-Difference Time-Domain methods to analyze the electromagnetic field distribution in photonic crystal microcavities. It uses an 8-band k · p perturbation theory to compute the energy band structure of the epitaxially grown quantum dots. We discuss a method that combines the results of these two calculations for determining the spontaneous emission lifetime of a quantum dot in bulk material or in a microcavity. The computational models developed in this thesis are used to identify and characterize microcavities for potential use in a single-photon source. The computational tools developed are also used to investigate novel photonic crystal microcavities that incorporate 1D distributed Bragg reflectors for vertical confinement. It is found that the spontaneous emission enhancement in the quasi-3D cavities can be significantly greater than in traditional suspended slab
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Induced defects in neutron irradiated GaN single crystals
International Nuclear Information System (INIS)
Park, I. W.; Koh, E. K.; Kim, Y. M.; Choh, S. H.; Park, S. S.; Kim, B. G.; Sohn, J. M.
2005-01-01
The local structure of defects in undoped, Si-doped, and neutron irradiated free standing GaN bulk crystals, grown by hydride vapor phase epitaxy, has been investigated by employing Raman scattering and cathodoluminescence. The GaN samples were irradiated to a dose of 2 x 10 17 neutrons in an atomic reactor at Korea Atomic Energy Research Institute. There was no appreciable change in the Raman spectra for undoped GaN samples before and after neutron irradiation. However, a forbidden transition, A 1 (TO) mode, appeared for a neutron irradiated Si-doped GaN crystal. Cathodoluminescence spectrum for the neutron irradiated Si-doped GaN crystal became much more broadened than that for the unirradiated one. The experimental results reveal the generation of defects with locally deformed structure in the wurtzite Si-doped GaN single crystal
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Effect of manganese doping on PIN-PMN-PT single crystals for high power applications
Sahul, Raffi
Single crystals based on relaxor-lead titanate (relaxor-PT) solid solutions have advanced the world of piezoelectric materials for the past two decades with their giant piezoelectric properties achieved by domain engineered configurations. When single crystals of lead magnesium niobate-lead titanate (PMN-PT) solid solution in the rhombohedral phase were poled along [001]c direction with "4R" domain configuration, they exhibited high piezoelectric charge coefficient (d33 >2000 pC/N) and high electromechanical coupling (k33 >0.9) which led to their widespread use in advanced medical imaging systems and underwater acoustic devices. However, PMN-PT crystals suffer from low phase transition temperature (Trt ˜85-95 °C) and lower coercive field (depolarizing electric field, Ec ˜2-3 kV/cm). Lead indium niobate - lead magnesium niobate - lead titanate (PIN-PMN-PT) ternary single crystals formed by adding indium as another constituent exhibit higher coercive field (E c ˜5kV/cm) and higher Curie temperature (Tc >210 °C) than the binary PMN-PT crystals (Ec ˜2.5 kV/cm and Tc high mechanical Q-factor (Qm >600) compared to the undoped binary crystals (Qm of PMN-PT 2000 pC/N for PMN-PT) occurs in the [001]c poled crystals, which is attributed to the polarization rotation mechanisms. Hence, domain engineering configurations induced by poling these crystals in orientations other than their polarization axis are critical for achieving large piezoelectric effects. Based on the phase diagram of these solid solutions, with the increase in PT content beyond the rhombohedral phase region, orthorhombic/monoclinic and tetragonal phases are formed. In the orthorhombic and tetragonal phases, the spontaneous polarization directions are in the [011]c and [001] c directions respectively. Similar to the "4R" domain configuration achieved in [001]c poled rhombohedral crystals, other domain configurations can be achieved by poling the single crystals in different orientations, leading to
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Strong exciton-photon coupling in organic single crystal microcavity with high molecular orientation
Energy Technology Data Exchange (ETDEWEB)
Goto, Kaname [Department of Electronics, Graduate School of Science and Technology, Kyoto Institute of Technology, Matsugasaki, Sakyo-ku, Kyoto 606-8585 (Japan); Yamashita, Kenichi, E-mail: yamasita@kit.ac.jp [Faculty of Electrical Engineering and Electronics, Kyoto Institute of Technology, Matsugasaki, Sakyo-ku, Kyoto 606-8585 (Japan); Yanagi, Hisao [Graduate School of Materials Science, Nara Institute of Science and Technology (NAIST), 8916-5 Takayama, Ikoma, Nara 630-0192 (Japan); Yamao, Takeshi; Hotta, Shu [Faculty of Materials Science and Technology, Kyoto Institute of Technology, Matsugasaki, Sakyo-ku, Kyoto 606-8585 (Japan)
2016-08-08
Strong exciton-photon coupling has been observed in a highly oriented organic single crystal microcavity. This microcavity consists of a thiophene/phenylene co-oligomer (TPCO) single crystal laminated on a high-reflection distributed Bragg reflector. In the TPCO crystal, molecular transition dipole was strongly polarized along a certain horizontal directions with respect to the main crystal plane. This dipole polarization causes significantly large anisotropies in the exciton transition and optical constants. Especially the anisotropic exciton transition was found to provide the strong enhancement in the coupling with the cavity mode, which was demonstrated by a Rabi splitting energy as large as ∼100 meV even in the “half-vertical cavity surface emitting lasing” microcavity structure.
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Strong exciton-photon coupling in organic single crystal microcavity with high molecular orientation
Goto, Kaname; Yamashita, Kenichi; Yanagi, Hisao; Yamao, Takeshi; Hotta, Shu
2016-08-01
Strong exciton-photon coupling has been observed in a highly oriented organic single crystal microcavity. This microcavity consists of a thiophene/phenylene co-oligomer (TPCO) single crystal laminated on a high-reflection distributed Bragg reflector. In the TPCO crystal, molecular transition dipole was strongly polarized along a certain horizontal directions with respect to the main crystal plane. This dipole polarization causes significantly large anisotropies in the exciton transition and optical constants. Especially the anisotropic exciton transition was found to provide the strong enhancement in the coupling with the cavity mode, which was demonstrated by a Rabi splitting energy as large as ˜100 meV even in the "half-vertical cavity surface emitting lasing" microcavity structure.
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Strong exciton-photon coupling in organic single crystal microcavity with high molecular orientation
International Nuclear Information System (INIS)
Goto, Kaname; Yamashita, Kenichi; Yanagi, Hisao; Yamao, Takeshi; Hotta, Shu
2016-01-01
Strong exciton-photon coupling has been observed in a highly oriented organic single crystal microcavity. This microcavity consists of a thiophene/phenylene co-oligomer (TPCO) single crystal laminated on a high-reflection distributed Bragg reflector. In the TPCO crystal, molecular transition dipole was strongly polarized along a certain horizontal directions with respect to the main crystal plane. This dipole polarization causes significantly large anisotropies in the exciton transition and optical constants. Especially the anisotropic exciton transition was found to provide the strong enhancement in the coupling with the cavity mode, which was demonstrated by a Rabi splitting energy as large as ∼100 meV even in the “half-vertical cavity surface emitting lasing” microcavity structure.
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The new single crystal diffractometer SC3
International Nuclear Information System (INIS)
Schefer, J.; Koch, M.; Keller, P.; Fischer, S.; Thut, R.
1996-01-01
Single crystal diffraction is a powerful method for the determination of precise structure parameters, superlattices, stress. Neutron single crystal diffraction gives additionally to X-rays information on magnetic structures, both commensurate and incommensurate, hydrogen positions, hydrogen bonding behavior and accurate bondlengths, e.g. important in cuprates. The method is therefore especially powerful if combined with X-ray diffraction results. The new instrument at SINQ has been designed for inorganic materials and is positioned at a thermal beam tube, pointing on a water scatterer. This scatterer is presently operating with H 2 O at ambient temperature, but a change to another medium at different temperature is possible. The instrument will be equipped with three area detectors, moving at fixed difference in 2Θ. each detector may be individually moved around a vertical circle (tilting angle γ), allowing to use not only 4-circle geometry in the temperature range from 1.5 to 380 K, but also any equipment from a dilution refrigerator (7 mK) to a heavy magnet. A high temperature furnace for 4-circle geometry is foreseen as a future option. (author) 6 figs., 1 tab., 7 refs
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The new single crystal diffractometer SC3
Energy Technology Data Exchange (ETDEWEB)
Schefer, J; Koch, M; Keller, P; Fischer, S; Thut, R [Lab. for Neutron Scattering ETH Zurich, Zurich (Switzerland) and Paul Scherrer Institute, Villigen (Switzerland)
1996-11-01
Single crystal diffraction is a powerful method for the determination of precise structure parameters, superlattices, stress. Neutron single crystal diffraction gives additionally to X-rays information on magnetic structures, both commensurate and incommensurate, hydrogen positions, hydrogen bonding behavior and accurate bondlengths, e.g. important in cuprates. The method is therefore especially powerful if combined with X-ray diffraction results. The new instrument at SINQ has been designed for inorganic materials and is positioned at a thermal beam tube, pointing on a water scatterer. This scatterer is presently operating with H{sub 2}O at ambient temperature, but a change to another medium at different temperature is possible. The instrument will be equipped with three area detectors, moving at fixed difference in 2{Theta}. each detector may be individually moved around a vertical circle (tilting angle {gamma}), allowing to use not only 4-circle geometry in the temperature range from 1.5 to 380 K, but also any equipment from a dilution refrigerator (7 mK) to a heavy magnet. A high temperature furnace for 4-circle geometry is foreseen as a future option. (author) 6 figs., 1 tab., 7 refs.
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International Nuclear Information System (INIS)
Tian, Song; Li, Hejun; Zhang, Yulei; Liu, Sen; Fu, Yangxi; Li, Yixian; Qiang, Xinfa
2013-01-01
Graphical abstract: Novel HfC microcrystal chains have been synthesized via a catalyst-assisted chemical vapor deposition process. SEM results show the chains have a periodically changing diameter and a nanoscale sharpening tip. Analysis of TEM/SAED/EELS/EDX data shows the single-crystal chains grow along a [0 0 1] direction and consist of a HfC core and a thin carbon-rich shell with embedded HfC nanocrystallites surrounding the core. This work achieves the controllable preparation of nanoscale HfC sharpening tips for application as a point electron emission source and facilitates the application of HfC ultrafast laser-triggered tips in attosecond science. Highlights: •HfC microcrystal chains were synthesized by a catalyst-assisted CVD. •The chains grow along a [0 0 1] direction and have a periodically changing diameter. •Single-crystal HfC core is sheathed by a thin carbon-rich shell. •A growth mechanism model is proposed to explain the growth of microcrystal chians. •This work achieves the controllable preparation of nanoscale HfC sharpening tips. -- Abstract: Novel hafnium carbide (HfC) microcrystal chains, with a periodically changing diameter and a nanoscale sharpening tip at the chain end, have been synthesized via a catalyst-assisted chemical vapor deposition (CVD) process. The as-synthesized chains with many octahedral microcrystals have diameters of between several hundreds of nm and 6 μm and lengths of ∼500 μm. TEM diffraction studies show that the chains are single-crystalline HfC and preferentially grow along a [0 0 1] crystal orientation. TEM/EELS/EDX analysis proves the chains are composed of a HfC core and a thin (several tens of nm to 100 nm) carbon-rich shell with the embedded HfC nanocrystallites (typically below 10 nm) surrounding the core. The growth mechanism model for the chains based on the vapor–liquid–solid process, the vapor–solid process, and the HfC crystal growth characteristics is discussed
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International Nuclear Information System (INIS)
Meng, Fang; Koschan, Merry; Melcher, Charles L.; Cohen, Peter
2015-01-01
Highlights: • Sintered pellets were firstly used to predict the performance of single crystals. • Similar properties between sintered pellets and single crystals were investigated. • B and Ba increase luminescence intensity in pellets and light yield in crystals. • Ca shortens photoluminescence decay in pellets and scintillation decay in crystals. - Abstract: Polycrystalline Gd 3 Ga 3 Al 2 O 12 :Ce (GGAG:Ce) pellets with various codopants were prepared via solid-state synthesis and characterized by X-ray diffraction, radioluminescence (RL), photoluminescence (PL), reflectivity and PL decay measurements. GGAG:Ce pellets codoped with B and Ba were found to have higher RL intensity than pellets with other codopants, while Ca codoping improved the decay time but reduced the RL intensity. These results were strongly correlated with the performance of these codopants in GGAG:Ce single crystals. The light yield of the single crystals codoped with B or Ba was ∼15% higher than the light yield of the GGAG:Ce crystal without codoping, while Ca codoping in single crystals resulted in lower light yield but shorter scintillation decay time (43 ns vs. 56 ns). The consistent performance of these codopants in both matrix forms indicates that sintering pellets may be used as a simple cost effective technique to evaluate compositions for likely single crystal scintillator performance
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METHOD FOR MANUFACTURING A SINGLE CRYSTAL NANO-WIRE
Van Den Berg, Albert; Bomer, Johan; Carlen Edwin, Thomas; Chen, Songyue; Kraaijenhagen Roderik, Adriaan; Pinedo Herbert, Michael
2012-01-01
A method for manufacturing a single crystal nano-structure includes providing a device layer with a 100 structure on a substrate; providing a stress layer onto the device layer; patterning the stress layer along the 110 direction of the device layer; selectively removing parts of the stress layer to
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METHOD FOR MANUFACTURING A SINGLE CRYSTAL NANO-WIRE.
Van Den Berg, Albert; Bomer, Johan; Carlen Edwin, Thomas; Chen, Songyue; Kraaijenhagen Roderik, Adriaan; Pinedo Herbert, Michael
2011-01-01
A method for manufacturing a single crystal nano-structure is provided comprising the steps of providing a device layer with a 100 structure on a substrate; providing a stress layer onto the device layer; patterning the stress layer along the 110 direction of the device layer; selectively removing
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Spall response of single-crystal copper
Turley, W. D.; Fensin, S. J.; Hixson, R. S.; Jones, D. R.; La Lone, B. M.; Stevens, G. D.; Thomas, S. A.; Veeser, L. R.
2018-02-01
We performed a series of systematic spall experiments on single-crystal copper in an effort to determine and isolate the effects of crystal orientation, peak stress, and unloading strain rate on the tensile spall strength. Strain rates ranging from 0.62 to 2.2 × 106 s-1 and peak shock stresses in the 5-14 GPa range, with one additional experiment near 50 GPa, were explored as part of this work. Gun-driven impactors, called flyer plates, generated flat top shocks followed by spall. This work highlights the effect of crystal anisotropy on the spall strength by showing that the spall strength decreases in the following order: [100], [110], and [111]. Over the range of stresses and strain rates explored, the spall strength of [100] copper depends strongly on both the strain rate and shock stress. Except at the very highest shock stress, the results for the [100] orientation show linear relationships between the spall strength and both the applied compressive stress and the strain rate. In addition, hydrodynamic computer code simulations of the spall experiments were performed to calculate the relationship between the strain rate near the spall plane in the target and the rate of free surface velocity release during the pullback. As expected, strain rates at the spall plane are much higher than the strain rates estimated from the free surface velocity release rate. We have begun soft recovery experiments and molecular dynamics calculations to understand the unusual recompression observed in the spall signature for [100] crystals.
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Large-scale single-crystal growth of (CH3)2NH2CuCl3 for neutron scattering experiments
Park, Garam; Oh, In-Hwan; Park, J. M. Sungil; Park, Seong-Hun; Hong, Chang Seop; Lee, Kwang-Sei
2016-05-01
Neutron scattering studies on low-dimensional quantum spin systems require large-size single-crystals. Single-crystals of (CH3)2NH2CuCl3 showing low-dimensional magnetic behaviors were grown by a slow solvent evaporation method in a two-solvent system at different temperature settings. The best results were obtained for the bilayer solution of methanol and isopropanol with a molar ratio of 2:1 at 35 °C. The quality of the obtained single-crystals was tested by powder and single-crystal X-ray diffraction and single-crystal neutron diffraction. In addition, to confirm structural phase transitions (SPTs), thermal analysis and single-crystal X-ray diffraction at 300 K and 175 K, respectively, were conducted, confirming the presence of a SPT at Tup=288 K on heating and Tdown=285 K on cooling.
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Growth of NH4Cl Single Crystal from Vapor Phase in Vertical Furnace
Nigara, Yutaka; Yoshizawa, Masahito; Fujimura, Tadao
1983-02-01
A pure and internally stress-free single crystal of NH4Cl was grown successfully from the vapor phase. The crystal measured 1.6 cmφ× 2 cm and had the disordered CsCl structure, which was stable below 184°C. The crystal was grown in an ampoule in a vertical furnace, in which the vapor was efficiently transported both by diffusion and convection. In line with the growth mechanism of a single crystal, the temperature fluctuation (°C/min) on the growth interface was kept smaller than the product of the temperature gradient (°C/cm) and the growth rate (cm/min). The specific heat of the crystal was measured around -31°C (242 K) during cooling and heating cycles by AC calorimetry. The thermal hysteresis (0.4 K) obtained here was smaller than that (0.89 K) of an NH4Cl crystal grown from its aqueous solution with urea added as a habit modifier.
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Energy Technology Data Exchange (ETDEWEB)
Gao, Qi; Gong, Yadong; Zhou, Yun Guang; Wen, Xue Long [School of Mechanical Engineering and Automation, Northeastern University, Shenyang (China)
2017-01-15
Micro-milling is widely used as a method for machining of micro-parts with high precision and efficiency. Taking the nickel-based single-crystal superalloy DD98 as the research object, the crystal characteristics of single-crystal materials were analysed, and the removal mechanism of single-crystal micro-milled parts was described. Based on molecular dynamics, a simulation model for nickel-based single-crystal superalloy DD98 micro-milling was established. Based on the response surface method of central composite design, the influences of spindle speed, feed rate, and milling depth on the surface roughness were examined, and a second-order regression model of the DD98 surface roughness was established. Using analysis of variance and the residuals of the model, a significant influence on surface roughness was found in the following order from large to small: Feed rate, spindle speed, and milling depth. Comparisons were conducted between the micro-milling experimental values and the predicted model values for different process parameters. The results show that the model fit is relatively high, and the adaptability is good. Scanning electron microscopy analysis of the micro-milling surfaces was performed to verify the slip and the removal mechanism of single-crystal materials. These results offer a theoretical reference and experimental basis for micro-milling of single-crystal materials.
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Nanosecond X-ray detector based on high resistivity ZnO single crystal semiconductor
Energy Technology Data Exchange (ETDEWEB)
Zhao, Xiaolong; He, Yongning, E-mail: yongning@mail.xjtu.edu.cn; Peng, Wenbo; Huang, Zhiyong; Qi, Xiaomeng; Pan, Zijian; Zhang, Wenting [School of Electronic and Information Engineering, Xi' an Jiaotong University, Xi' an 710049 (China); Chen, Liang; Liu, Jinliang; Zhang, Zhongbing; Ouyang, Xiaoping [Radiation Detection Research Center, Northwest Institute of Nuclear Technology, Xi' an 710024 (China)
2016-04-25
The pulse radiation detectors are sorely needed in the fields of nuclear reaction monitoring, material analysis, astronomy study, spacecraft navigation, and space communication. In this work, we demonstrate a nanosecond X-ray detector based on ZnO single crystal semiconductor, which emerges as a promising compound-semiconductor radiation detection material for its high radiation tolerance and advanced large-size bulk crystal growth technique. The resistivity of the ZnO single crystal is as high as 10{sup 13} Ω cm due to the compensation of the donor defects (V{sub O}) and acceptor defects (V{sub Zn} and O{sub i}) after high temperature annealing in oxygen. The photoconductive X-ray detector was fabricated using the high resistivity ZnO single crystal. The rise time and fall time of the detector to a 10 ps pulse electron beam are 0.8 ns and 3.3 ns, respectively, indicating great potential for ultrafast X-ray detection applications.
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Electrical conduction studies in ferric-doped KHSO 4 single crystals
Sharon, M.; Kalia, A. K.
1980-03-01
Direct-current conductivity of ferric-doped (138, 267, and 490 ppm) single crystals of KHSO 4 has been studied. The mechanism for the dc conduction process is discussed. It is observed that the ferric ion forms a (Fe 3+-two vacancies) complex and the enthaply for its formation is 0.09 ± 0.01 eV. It is proposed that each ferric ion removes two protons from each HSO 4 dimer. The conductivity plot shows the presence of intrinsic and extrinsic regions. It is proposed that in the intrinsic region the dimer of HSO -4 breaks reversibly to form a long-chain monomer-type structure. The conductivity in the KHSO 4 crystal is proposed to be controlled by the rotation of HSO -4 tetrahedra along the axis which contains no hydrogen atom. Isotherm calculation for the trivalent-doped system is applied to this crystal and the results are compared with Co 2+-doped KHSO 4 crystal. The distribution coefficient of ferric ion in the KHSO 4 single crystal is calculated to be 4.5 × 10 -1. Ferric ion causes tapering in the crystal growth habit of KHSO 4 and it is believed to be due to the presence of (Fe 3+-two vacancies) complex. The enthalpy values for the various other processes are as follows: enthalpy for the breakage of HSO -4 dimer ( Hi) = 1.28 ± 0.01 eV; enthalpy for the rotation of HSO -4 tetrahedron ( Hm) = 0.58 ± 0.01 eV.
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International Nuclear Information System (INIS)
Schachtner, R.
1981-01-01
Tracer diffusion coefficients of Mg, Si and O in monocrystalline forsterite were determined by Sims as a function of temperature and crystal orientation. Former results on oxygen diffusion in SiO 2 single crystals using nuclear activation methods were confirmed by Sims data. The influence of crystal defects and impurities is discussed. (TW)
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Time-resolved luminescent spectroscopy of YAG:Ce single crystal and single crystalline films
International Nuclear Information System (INIS)
Zorenko, Yu.; Gorbenko, V.; Savchyn, V.; Vozniak, T.; Puzikov, V.; Danko, A.; Nizhankovski, S.
2010-01-01
The peculiarities of the luminescence and energy transfer from YAG host to the emission centers formed by the Y Al antisite defects and Ce 3+ ions have been studied in YAG:Ce single crystals, grown from the melt by modified Bridgman method in Ar and CO 2 + H 2 atmospheres, and YAG:Ce single crystalline film, grown by liquid phase epitaxy method, using the comparative time-resolved luminescent spectroscopy under excitation by synchrotron radiation in the range of fundamental adsorption of this garnet.
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Ellipsometric studies of ErMnO3 single crystals
DEFF Research Database (Denmark)
Babonas, G.-J.; Grivel, Jean-Claude; Reza, A.
2007-01-01
Ellipsometric studies of ErMnO3 single crystals have been carried out in the spectral range of 1-5 eV by means of photometric ellipsometers. Experimental ellipsometric data were analysed in the uniaxial crystal model. For the first time, the components of dielectric function of ErMnO3 were...
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Growth of high quality Bi2Sr2CaCu2Oy single crystals by the modified vertical Bridgman method
International Nuclear Information System (INIS)
Nagashima, O.; Tanaka, H.; Echizen, Y.; Kishida, S.
2004-01-01
We grew Bi 2 Sr 2 CaCu 2 O y (Bi-2212) single crystals by the modified vertical Bridgman (VB) method, and investigated their characteristics in order to clarify the optimum growth conditions for obtaining high-quality Bi-2212 single crystals. The Bi-2212 single crystals were grown changing pulling rates or using starting materials after pre-treatments. We found that the superconducting critical temperature (T c ) of the single crystal prepared at a slow growth rate of 0.25 mm/h was about 88 K and that the single crystals were a Bi-2212 single phase. Moreover, the single crystals grown using the starting materials pre-treated in Ar and O 2 atmospheres, had the T c of about 88 and 86 K, respectively. In addition, both of single crystals were Bi-2212 single phase
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International Nuclear Information System (INIS)
Jin, Geng Bang; Soderholm, L.
2015-01-01
Colorless crystals of ThSiO 4 (huttonite) (1) and (Ca 0.5 Na 0.5 ) 2 NaThSi 8 O 20 (2) have been synthesized by the solid-state reactions of ThO 2 , CaSiO 3 , and Na 2 WO 4 at 1073 K. Green crystals of (Ca 0.5 Na 0.5 ) 2 NaUSi 8 O 20 (3) have been synthesized by the solid-state reactions of UO 2 , CaSiO 3 , and Na 2 WO 4 at 1003 K. All three compounds have been characterized by single-crystal X-ray diffraction. Compound 1 adopts a monazite-type three-dimensional condensed structure, which is built from edge- and corner-shared ThO 9 polyhedra and SiO 4 tetrahedra. Compounds 2 and 3 are isostructural and they crystallize in a steacyite-type structure. The structure consists of discrete pseudocubic [Si 8 O 20 ] 8− polyanions, which are connected by An 4+ cations into a three-dimensional framework. Each An atom coordinates to eight monodentate [Si 8 O 20 ] 8− moieties in a square antiprismatic geometry. Na + and Ca 2+ ions reside in the void within the framework. Raman spectra of 1, 2, and 3 were collected on single crystal samples. 1 displays more complex vibrational bands than thorite. Raman spectra of 2 and 3 are analogous with most of vibrational bands located at almost the same regions. - Graphical abstract: A Raman spectrum and crystal structures of (Ca 0.5 Na 0.5 ) 2 NaAnSi 8 O 20 (An=Th, U), which contain pseudocubic [Si 8 O 20 ] 8− polyanions and eight-coordinate An 4+ cations. - Highlights: • Single crystal growth of three tetravalent actinide silicates from melts. • Single-crystal structures and Raman spectra of (Ca 0.5 Na 0.5 ) 2 NaAnSi 8 O 20 (An=Th, U). • First report of Raman spectrum of huttonite on single crystal samples
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Luminescence and scintillation properties of YAG:Ce single crystal and optical ceramics
Mihóková, E; Mareš, J A; Beitlerová, A; Vedda, A; Nejezchleb, K; Blažek, K; D’Ambrosio, C
2007-01-01
We use various techniques to study optical and scintillation properties of Ce-doped yttrium aluminum garnet, Y3Al5O12 (YAG:Ce), in the form of a high-quality industrial single crystal. This was compared to optical ceramics prepared from YAG:Ce nanopowders. We present experimental data in the areas of optical absorption, radioluminescence, scintillation decay, photoelectron yield, thermally stimulated luminescence and radiation-induced absorption. The results point to an interesting feature—the absence of antisite (YAl, i.e. Y at the Al site) defects in optical ceramics. The scintillation decay of the ceramics is faster than that of the single crystal, but its photoelectron yield (measured with 1 μs integration time) is about 30–40% lower. Apart from the photoelectron yield value the YAG:Ce optical ceramic is fully comparable to a high quality industrial YAG:Ce single crystal and can become a competitive scintillator material.
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Scintillation activity in an unirradiated single crystal of 3-hydroxyxanthine
International Nuclear Information System (INIS)
Cooke, D.W.; Jahan, M.S.; Alexander, C. Jr.
1976-01-01
A method of growing single crystals (approximately 4mm long) of 3-hydroxyxanthine is described. Observed scintillations occurring in an unirradiated single crystal of this potent oncogen as the temperature is lowered from 300 to 90 K are shown. It was found that these scintillations occur upon heating or cooling and do not diminish in activity as the number of heating and cooling cycles increase. It was found that a short duration u.v. exposure would terminate the scintillation activity and various attempts (such as annealing and pressure changes) to rejuvenate them were unsuccessful. With these observations in mind speculation is made concerning the mechanisms associated with the production of purine N-oxide derivatives. (U.K.)
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Raman analysis of gold on WSe2 single crystal film
International Nuclear Information System (INIS)
Mukherjee, Bablu; Sun Leong, Wei; Li, Yida; Thong, John T L; Gong, Hao; Sun, Linfeng; Xiang Shen, Ze; Simsek, Ergun
2015-01-01
Synthesis and characterization of high-quality single-crystal tungsten diselenide (WSe 2 ) films on a highly insulating substrate is presented. We demonstrate for the first time that the presence of gold (Au) nanoparticles in the basal plane of a WSe 2 film can enhance its Raman scattering intensity. The experimentally observed enhancement ratio in the Raman signal correlates well with the simulated electric field intensity using both three-dimensional electromagnetic software and theoretical calculation considering layered medium coupled-dipole approximation (LM-CDA). This work serves as a guideline for the use of Au nanoparticles on WSe 2 single-crystal thin films for surface enhanced Raman scattering (SERS) applications in the future. (paper)
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Corelli: Efficient single crystal diffraction with elastic discrimination
Indian Academy of Sciences (India)
Here, we discuss the potential of the cross-correlation technique for efficient measurement of single crystal diffuse scattering with energy discrimination, as will be implemented in a novel instrument, Corelli. Utilizing full experiment simulations, we show that this technique readily leads up to a fifty-fold gain in efficiency, ...
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A continuum model for the anisotropic creep of single crystal nickel-based superalloys
International Nuclear Information System (INIS)
Prasad, Sharat C.; Rajagopal, K.R.; Rao, I.J.
2006-01-01
In this paper, we extend the constitutive theory developed by Prasad et al. [Prasad SC, Rao IJ, Rajagopal KR. A continuum model for the creep of single crystal nickel-base superalloys. Acta Mater 2005;53(3):669-79], to describe the creep anisotropy associated with crystallographic orientation in single crystal nickel-based superalloys. The constitutive theory is cast within a general thermodynamic framework that has been developed to describe the response of materials capable of existing in multiple stress free configurations ('natural configurations'). Central to the theory is the prescription of the forms for the stored energy and rate of dissipation functions. The stored energy reflects the fact that the elastic response exhibits cubic symmetry. The model takes into account the fact that the symmetry of single crystals does not change with inelastic deformation. The rate of dissipation function is also chosen to be anisotropic, in that it reflects invariance to transformations that belong to the cubic symmetry group. The model is used to simulate uniaxial creep of single crystal nickel-based superalloy CMSX-4 for loading along the , and orientations. The predictions of the theory agree well with the experimental data
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Chiral multichromic single crystals for optical devices (LDRD 99406).
Energy Technology Data Exchange (ETDEWEB)
Kemp, Richard Alan; Felix, Ana M. (University of New Mexico, Albuquerque, NM)
2006-12-01
This report summarizes our findings during the study of a novel system that yields multi-colored materials as products. This system is quite unusual as it leads to multi-chromic behavior in single crystals, where one would expect that only a single color would exist. We have speculated that these novel solids might play a role in materials applications such as non-linear optics, liquid crystal displays, piezoelectric devices, and other similar applications. The system examined consisted of a main-group alkyl compound (a p block element such as gallium or aluminum) complexed with various organic di-imines. The di-imines had substituents of two types--either alkyl or aromatic groups attached to the nitrogen atoms. We observed that single crystals, characterized by X-ray crystallography, were obtained in most cases. Our research during January-July, 2006, was geared towards understanding the factors leading to the multi-chromic nature of the complexes. The main possibilities put forth initially considered (a) the chiral nature of the main group metal, (b) possible reduction of the metal to a lower-valent, radical state, (c) the nature of the ligand(s) attached to the main group metal, and (d) possible degradation products of the ligand leading to highly-colored products. The work carried out indicates that the most likely explanation considered involves degradation of the aromatic ligands (a combination of (c) and (d)), as the experiments performed can clearly rule out (a) and (b).
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Acquisition of Single Crystal Growth and Characterization Equipment. Final report
International Nuclear Information System (INIS)
Maple, M. Brian; Zocco, Diego A.
2008-01-01
Final Report for DOE Grant No. DE-FG02-04ER46178 'Acquisition of Single Crystal Growth and Characterization Equipment'. There is growing concern in the condensed matter community that the need for quality crystal growth and materials preparation laboratories is not being met in the United States. It has been suggested that there are too many researchers performing measurements on too few materials. As a result, many user facilities are not being used optimally. The number of proficient crystal growers is too small. In addition, insufficient attention is being paid to the enterprise of finding new and interesting materials, which is the driving force behind much of condensed matter research and, ultimately, technology. While a detailed assessment of this situation is clearly needed, enough evidence of a problem already exists to compel a general consensus that the situation must be addressed promptly. This final report describes the work carried out during the last four years in our group, in which a state-of-the-art single crystal growth and characterization facility was established for the study of novel oxides and intermetallic compounds of rare earth, actinide and transition metal elements. Research emphasis is on the physics of superconducting (SC), magnetic, heavy fermion (HF), non-Fermi liquid (NFL) and other types of strongly correlated electron phenomena in bulk single crystals. Properties of these materials are being studied as a function of concentration of chemical constituents, temperature, pressure, and magnetic field, which provide information about the electronic, lattice, and magnetic excitations at the root of various strongly correlated electron phenomena. Most importantly, the facility makes possible the investigation of material properties that can only be achieved in high quality bulk single crystals, including magnetic and transport phenomena, studies of the effects of disorder, properties in the clean limit, and spectroscopic and scattering
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Diamond turning of Si and Ge single crystals
Energy Technology Data Exchange (ETDEWEB)
Blake, P.; Scattergood, R.O.
1988-12-01
Single-point diamond turning studies have been completed on Si and Ge crystals. A new process model was developed for diamond turning which is based on a critical depth of cut for plastic flow-to-brittle fracture transitions. This concept, when combined with the actual machining geometry for single-point turning, predicts that {open_quotes}ductile{close_quotes} machining is a combined action of plasticity and fracture. Interrupted cutting experiments also provide a meant to directly measure the critical depth parameter for given machining conditions.
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Solidification behaviors of a single-crystal superalloy under lateral constraints
International Nuclear Information System (INIS)
Zhuangqi Hu; Huaming Wang
1993-01-01
The effect of lateral constraints ahead of solidification interface on the solidification behaviors of a newly developed hot corrosion resistant single-crystal nickel-base superalloy was investigated under commercial single-crystal production conditions. The lateral constraints or section variations ahead of solidification front were found to have drastic influences both on the modes of solidification and the profiles of solute segregation. As lateral constraints were imposed ahead of the directionally solidifying interface, the solidification microstructure of the single-crystal superalloy changed suddenly, through a γ/γ' eutectic-free zone which is characterized by an extremely-fine and highly-developed dendrite network, from the original well-branched dendritic structure to a fine cellular-dendrite or regular cell structure, accompanying which the primary arm spacing, the severity of segregation and the amount of microporosity decreased remarkably. The newly formed cellular dendrite or cell structure transforms always gradually to the initial coarse dendrite structure as the lateral constraint is finally released whether gradually or sharply. Moreover, an abnormal porosity zone was readily observed in the initial section beneath and away from the eutectic-free zone. The solidification microstructural changes were attributed to the drastic dynamical changes in local solidification cooling conditions and in momentum transport during solidification due to the presence of lateral constraint
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Structural peculiarities and point defects of bulk-ZnO single crystals
International Nuclear Information System (INIS)
Kaurova, I.A.; Kuz’micheva, G.M.; Rybakov, V.B.; Cousson, A.; Gayvoronsky, V.Ya.
2014-01-01
Highlights: • ZnO single crystals of different color were grown by the hydrothermal method. • Point defects in ZnO have been firstly investigated by neutron diffraction. • Presence of additional reflections caused by kinetic growth effects was revealed. • The relationship between the color and zinc and oxygen vacancies was found. • Photoinduced variation of transmittance versus the CW laser intensity was analyzed. - Abstract: ZnO single crystals are related to promising direct wide band gap semiconductor materials belonging to the A II B VI type of compounds with wurtzite structure. “Unintentional” n-type conductivity in ZnO may be caused by zinc and oxygen vacancies, and interstitial zinc atoms. To date, the comprehensive structural investigation and analysis of point defects in ZnO is absent in literature. Green, light green and almost colorless ZnO single crystals grown by the hydrothermal method in concentrated alkali solutions 4M(KOH) + 1M(LiOH) + 0.1M(NH 4 OH) on monohedral seeds [0 0 0 1] at crystallization temperatures in the range of 330–350 °C and pressures in the range of 30–50 MPa have been firstly investigated by neutron diffraction. It was revealed the presence of additional reflections (∼12–∼16%) for all the crystals caused by kinetic growth effects that give grounds to assign them to the space group P3 rather than to P6 3 mc. Analysis of the refined compositions together with the color of ZnO crystals does not rule out the relationship between the color and vacancies in the zinc and oxygen positions whose concentration decreases with the discoloration of the samples. The analysis of the photoinduced variation of the total and on-axis transmittance versus the CW laser intensity showed that the colored samples have profound deep defects related to oxygen vacancies
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Kozlova, S. A.; Gubin, S. A.; Maklashova, I. V.; Selezenev, A. A.
2017-11-01
Molecular dynamic simulations of isothermal compression parameters are performed for a hexanitrohexaazaisowurtzitane single crystal (C6H6O12N12) using a modified ReaxFF-log reactive force field. It is shown that the pressure-compression ratio curve for a single C6H6O12N12 crystal at constant temperature T = 300 K in pressure range P = 0.05-40 GPa is in satisfactory agreement with experimental compression isotherms obtained for a single C6H6O12N12 crystal. Hugoniot molecular-dynamic simulations of the shock-wave hydrostatic compression of a single C6H6O12N12 crystal are performed. Along with Hugoniot temperature-pressure curves, calculated shock-wave pressure-compression ratios for a single C6H6O12N12 crystal are obtained for a wide pressure range of P = 1-40 GPa. It is established that the percussive adiabat obtained for a single C6H6O12N12 crystal is in a good agreement with the experimental data. All calculations are performed using a LAMMPS molecular dynamics simulation software package that provides a ReaxFF-lg reactive force field to support the approach.
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Wu, Chaoxing; Li, Fushan; Chen, Wei; Veeramalai, Chandrasekar Perumal; Ooi, Poh Choon; Guo, Tailiang
2015-03-01
The direct observation of single crystal graphene growth and its shape evolution is of fundamental importance to the understanding of graphene growth physicochemical mechanisms and the achievement of wafer-scale single crystalline graphene. Here we demonstrate the controlled formation of single crystal graphene with varying shapes, and directly observe the shape evolution of single crystal graphene by developing a localized-heating and rapid-quenching chemical vapor deposition (CVD) system based on electromagnetic induction heating. Importantly, rational control of circular, hexagonal, and dendritic single crystalline graphene domains can be readily obtained for the first time by changing the growth condition. Systematic studies suggest that the graphene nucleation only occurs during the initial stage, while the domain density is independent of the growth temperatures due to the surface-limiting effect. In addition, the direct observation of graphene domain shape evolution is employed for the identification of competing growth mechanisms including diffusion-limited, attachment-limited, and detachment-limited processes. Our study not only provides a novel method for morphology-controlled graphene synthesis, but also offers fundamental insights into the kinetics of single crystal graphene growth.
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Lan, Ya-Qian; Jiang, Hai-Long; Li, Shun-Li; Xu, Qiang
2012-07-16
In this work, for the first time, we have systematically demonstrated that solvent plays crucial roles in both controllable synthesis of metal-organic frameworks (MOFs) and their structural transformation process. With solvent as the only variable, five new MOFs with different structures have been constructed, in which one MOF undergoes solvent-induced single-crystal to single-crystal (SCSC) transformation that involves not only solvent exchange but also the cleavage and formation of coordination bonds. Particularly, a significant crystallographic change has been realized through an unprecedented three-step SCSC transformation process. Furthermore, we have demonstrated that the obtained MOF could be an excellent host for chromophores such as Alq3 for modulated luminescent properties.
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Microstructural Study of Titanium Carbide Coating on Cemented Carbide
DEFF Research Database (Denmark)
Vuorinen, S.; Horsewell, Andy
1982-01-01
Titanium carbide coating layers on cemented carbide substrates have been investigated by transmission electron microscopy. Microstructural variations within the typically 5µm thick chemical vapour deposited TiC coatings were found to vary with deposit thickness such that a layer structure could...... be delineated. Close to the interface further microstructural inhomogeneities were obsered, there being a clear dependence of TiC deposition mechanism on the chemical and crystallographic nature of the upper layers of the multiphase substrate....
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Energy Technology Data Exchange (ETDEWEB)
Xie, Tao [School of Materials Science and Engineering, Shanghai Institute of Technology, Shanghai 201418 (China); Synthetio Single Crystal Research Center, Shanghai Institute of Ceramic, Chinese Academy of Sciences, Shanghai 200050 (China); Key Laboratory of Transparent and Opto-functional Inorganic Materials, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); Shen, Hui, E-mail: hshen@sit.edu.cn [School of Materials Science and Engineering, Shanghai Institute of Technology, Shanghai 201418 (China); Zhao, Xiangyang; Man, Peiwen [Synthetio Single Crystal Research Center, Shanghai Institute of Ceramic, Chinese Academy of Sciences, Shanghai 200050 (China); Key Laboratory of Transparent and Opto-functional Inorganic Materials, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); Wu, Anhua, E-mail: wuanhua@mail.sic.ac.cn [Synthetio Single Crystal Research Center, Shanghai Institute of Ceramic, Chinese Academy of Sciences, Shanghai 200050 (China); Key Laboratory of Transparent and Opto-functional Inorganic Materials, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); Su, Liangbi [Synthetio Single Crystal Research Center, Shanghai Institute of Ceramic, Chinese Academy of Sciences, Shanghai 200050 (China); Key Laboratory of Transparent and Opto-functional Inorganic Materials, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); Xu, Jiayue, E-mail: xujiayue@sit.edu.cn [School of Materials Science and Engineering, Shanghai Institute of Technology, Shanghai 201418 (China)
2016-11-01
High quality YFe{sub 0.6}Mn{sub 0.4}O{sub 3} single crystal was grown by floating zone technique using a four-mirror-image-furnace under flowing air. Powder X-ray diffraction gives well evidence that the specimen has an orthorhombic structure, with space group Pbnm. Temperature dependence of the magnetizations of YFe{sub 0.6}Mn{sub 0.4}O{sub 3} single crystal were studied under ZFC and FC modes in the temperature range from 5 K to 400 K. A clear spin reorientation transition behavior (Γ{sub 4}→Γ{sub 1}) is observed in the temperature range of 322–316 K, due to the substitution of Mn at the Fe site of YFeO{sub 3}. Its Néel temperature is around 385 K. Moreover, the spin reorientation is verified by the change of magnetic hysteresis loops of the sample along [001] axis in the temperature range of 50–385 K. The thermal properties of the sample were measured by the differential scanning calorimeter (DSC) from 300 K to 500 K, which also clearly appear anomaly in the spin reorientation region. - Highlights: • High quality YFe{sub 0.6}Mn{sub 0.4}O{sub 3} single crystal was grown by floating zone technique. • The thermal properties appear anomaly in the spin reorientation region. • A clear spin reorientation transition behavior (Γ{sub 4}→Γ{sub 1}) is observed in the temperature range of 322–316 K, due to the substitution of Mn at the Fe site of YFeO{sub 3}.
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Neutron transmission and reflection at a copper single crystal
Energy Technology Data Exchange (ETDEWEB)
Adib, M.; Maayouf, R.M.A.; Abdel-Kawy, A.; Fayek, M.; Habib, N. (Atomic Energy Establishment, Cairo (Egypt). Reactor and Neutron Physics Dept.); Wahba, M. (Ain Shams Univ., Cairo (Egypt). Dept. of Engineering Physics and Mathematics)
1991-06-01
Neutron transmission and reflection at a copper single crystal cut along the (111) plane were studied with the fixed-scattering-angle spectrometer installed at the ET-RR-1 reactor. The transmission was measured for neutron wavelengths between 0.15 and 0.46 nm and various orientations of the (111) plane with respect to the incident beam. When used as a neutron band pass filter, the crystal is optimally oriented when the neutron beam is incident parallel to the (111) direction. The reflectivity was measured for the (111) plane at 45deg with respect to the incident beam. The results were found to be in reasonable agreement with a value predicted for the reflected intensity at an imperfect crystal with finite absorption. (orig.).
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Neutron transmission and reflection at a copper single crystal
International Nuclear Information System (INIS)
Adib, M.; Maayouf, R.M.A.; Abdel-Kawy, A.; Fayek, M.; Habib, N.; Wahba, M.
1991-01-01
Neutron transmission and reflection at a copper single crystal cut along the (111) plane were studied with the fixed-scattering-angle spectrometer installed at the ET-RR-1 reactor. The transmission was measured for neutron wavelengths between 0.15 and 0.46 nm and various orientations of the (111) plane with respect to the incident beam. When used as a neutron band pass filter, the crystal is optimally oriented when the neutron beam is incident parallel to the [111] direction. The reflectivity was measured for the (111) plane at 45deg with respect to the incident beam. The results were found to be in reasonable agreement with a value predicted for the reflected intensity at an imperfect crystal with finite absorption. (orig.) [de
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Twinning structures in near-stoichiometric lithium niobate single crystals
International Nuclear Information System (INIS)
Yao, Shuhua; Chen, Yanfeng
2010-01-01
A near-stoichiometric lithium niobate single crystal has been grown by the Czochralski method in a hanging double crucible with a continuous powder supply system. Twins were found at one of the three characteristic growth ridges of the as-grown crystal. The twin structure was observed and analyzed by transmission synchrotron topography. The image shifts ΔX and ΔY in the transmission synchrotron topograph were calculated for the 3 anti 2 anti 12 and 0 anti 222 reflections based on results from high-resolution X-ray diffractometry. It is confirmed that one of the {01 anti 1 anti 2} m planes is the composition face of the twin and matrix crystals. The formation mechanism of these twins is discussed. (orig.)
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Growth and characterization of lead-free (K,Na)NbO{sub 3}-based piezoelectric single crystals
Energy Technology Data Exchange (ETDEWEB)
Liu, Hairui
2016-10-19
Lead-free piezoelectric materials have received increasing attention in the last decade, driven by environmental issues and health concerns. Of considerable interest is the (K,Na)NbO{sub 3} (KNN)-based system, which possesses a relatively high Curie temperature and good piezoelectric properties. Abundant publications on KNN-based polycrystalline ceramics increased the interest in studying their single-crystalline form, based on two major concerns. The first concern refers to the negative role of grain interactions on the electromechanical response. The second concern deals with domain engineering. The relationship between external electric field direction, crystallographic orientation, and spontaneous polarization vectors for a specific structure can be more readily established in single crystals and thus offers a pathway for an in-depth understanding of fundamental mechanism and potential applications. The exciting enhancement of both piezoelectric and ferroelectric response in lead-based single crystals also encourages the further exploration of KNN-based piezoelectric crystals, as they possess the same perovskite structure. The main goal of this thesis is to find possible approaches for improved electromechanical properties in KNN-based piezoelectric single crystals. In Chapter 2, the current development of KNN-based single crystals as piezoelectrics is reviewed, following a short introduction of fundamental knowledge on piezoelectrics and ferroelectrics. Both submerged-seed solution growth and top-seeded solution growth techniques were employed to produce single crystals, as described detailed in Chapter 3. Emphasis is subsequently placed on issues of the crystal growth process, effective methods to enhance electrical properties, and crystallographic orientation-dependent electrical properties in Li-, Ta-, and/or Sb-substituted KNN single crystals. The main conclusions from the crystal growth aspect are presented in Chapter 4 and can be summarized as follows
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International Nuclear Information System (INIS)
Wang, Zhuqing; Stoica, Alexandru D.; Ma, Dong; Beese, Allison M.
2016-01-01
In this work, diffraction and single-crystal elastic constants of Inconel 625 have been determined by means of in situ loading at room and elevated temperatures using time-of-flight neutron diffraction. Theoretical models proposed by Voigt, Reuss, and Kroner were used to determine single-crystal elastic constants from measured diffraction elastic constants, with the Kroner model having the best ability to capture experimental data. The magnitude of single-crystal elastic moduli, computed from single-crystal elastic constants, decreases and the single crystal anisotropy increases as temperature increases, indicating the importance of texture in affecting macroscopic stress at elevated temperatures. The experimental data reported here are of great importance in understanding additive manufacturing of metallic components as: diffraction elastic constants are required for computing residual stresses from residual lattice strains measured using neutron diffraction, which can be used to validate thermomechanical models of additive manufacturing, while single-crystal elastic constants can be used in crystal plasticity modeling, for example, to understand mechanical deformation behavior of additively manufactured components.
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Energy Technology Data Exchange (ETDEWEB)
Wang, Zhuqing [Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802 (United States); Stoica, Alexandru D. [Chemical and Engineering Materials Division, Neutron Sciences Directorate, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States); Ma, Dong, E-mail: dongma@ornl.gov [Chemical and Engineering Materials Division, Neutron Sciences Directorate, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States); Beese, Allison M., E-mail: amb961@psu.edu [Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802 (United States)
2016-09-30
In this work, diffraction and single-crystal elastic constants of Inconel 625 have been determined by means of in situ loading at room and elevated temperatures using time-of-flight neutron diffraction. Theoretical models proposed by Voigt, Reuss, and Kroner were used to determine single-crystal elastic constants from measured diffraction elastic constants, with the Kroner model having the best ability to capture experimental data. The magnitude of single-crystal elastic moduli, computed from single-crystal elastic constants, decreases and the single crystal anisotropy increases as temperature increases, indicating the importance of texture in affecting macroscopic stress at elevated temperatures. The experimental data reported here are of great importance in understanding additive manufacturing of metallic components as: diffraction elastic constants are required for computing residual stresses from residual lattice strains measured using neutron diffraction, which can be used to validate thermomechanical models of additive manufacturing, while single-crystal elastic constants can be used in crystal plasticity modeling, for example, to understand mechanical deformation behavior of additively manufactured components.
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International Nuclear Information System (INIS)
Haldipur, P.; Margetan, F. J.; Thompson, R. B.
2006-01-01
Single-crystal elastic stiffness constants are important input parameters for many calculations in material science. There are well established methods to measure these constants using single-crystal specimens, but such specimens are not always readily available. The ultrasonic properties of metal polycrystals, such as velocity, attenuation, and backscattered grain noise characteristics, depend in part on the single-crystal elastic constants. In this work we consider the estimation of elastic constants from UT measurements and grain-sizing data. We confine ourselves to a class of particularly simple polycrystalline microstructures, found in some jet-engine Nickel alloys, which are single-phase, cubic, equiaxed, and untextured. In past work we described a method to estimate the single-crystal elastic constants from measured ultrasonic velocity and attenuation data accompanied by metallographic analysis of grain size. However, that methodology assumes that all attenuation is due to grain scattering, and thus is not valid if appreciable absorption is present. In this work we describe an alternative approach which uses backscattered grain noise data in place of attenuation data. Efforts to validate the method using a pure copper specimen are discussed, and new results for two jet-engine Nickel alloys are presented
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Structural templating in a nonplanar phthalocyanine using single crystal copper iodide
Rochford, L. A. (Luke A.); Ramadan, Alexandra J.; Keeble, Dean S.; Ryan, Mary P.; Heutz, Sandrine; Jones, T. S. (Tim S.)
2015-01-01
Solution-grown copper iodide crystals are used as substrates for the templated growth of the nonplanar vanadyl phthalocyanine using organic molecular beam deposition. Structural characterization reveals a single molecular orientation produced by the (111) Miller plane of the copper iodide crystals. These fundamental measurements show the importance of morphology and structure in templating interactions for organic electronics applications.
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Spiro-OMeTAD single crystals: Remarkably enhanced charge-carrier transport via mesoscale ordering
Shi, Dong; Qin, X.; Li, Yuan; He, Yao; Zhong, Cheng; Pan, Jun; Dong, H.; Xu, Wei; Li, T.; Hu, W.; Bredas, Jean-Luc; Bakr, Osman
2016-01-01
bottleneck for advancing cell efficiencies. We devised an antisolvent crystallization strategy to grow single crystals of spiro-OMeTAD, which allowed us to experimentally elucidate its molecular packing and transport properties. Electronic structure
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Single mode dye-doped polymer photonic crystal lasers
DEFF Research Database (Denmark)
Christiansen, Mads Brøkner; Buss, Thomas; Smith, Cameron
2010-01-01
Dye-doped polymer photonic crystal (PhC) lasers fabricated by combined nanoimprint and photolithography are studied for their reproducibility and stability characteristics. We introduce a phase shift in the PhC lattice that substantially improves the yield of single wavelength emission. Single mode...... emission and reproducibility of laser characteristics are important if the lasers are to be mass produced in, e. g., optofluidic sensor chips. The fabrication yield is above 85% with highly reproducible wavelengths (within 0.5%), and the temperature dependence on the wavelength is found to be -0.045 or -0...
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Photon emission by electrons and positrons traversing thin single crystal
International Nuclear Information System (INIS)
Ol'chak, A.S.
1984-01-01
Radiation emission by planar channeled particles (electrons, positrons) in a thin single crystal of thickness L is considered. It is shown that for L approximately πb/THETAsub(L) (b is the lattice constant, THETA sub(L) the Lindhard angle) besides the main spontaneous channeling maxima there exist auxiliary interference maxima, the positions of all the maxima depending on L. The dependence of the radiation spectral intensity on crystal thickness is discussed
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International Nuclear Information System (INIS)
Pankin, G.N.; Esin, V.O.; Ponomarev, V.V.
1996-01-01
A study was made into specific features of cellular - dendritic structure formation in single crystals of nickel base alloy ZhS26 which had been crystallized following the pattern of solid solution. The single crystals in growing were subjected to periodic partial remelting to suppress the transition of cellular structure into a cellular - dendritic one during directional solidification. The results obtained showed the possibility to stabilize cellular growth of solid solution by way of inversion of interphase surface motion in the process of directional crystallization. 4 refs.; 5 figs
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Lattice effects in HoVo(3) single crystal
Sikora, M.; Marquina, C.; Ibarra, M. R.; Nugroho, A. A.; Palstra, T. T. M.
We report the study of lattice effects in the Mott insulator HoVO3 performed by means of linear thermal expansion on a single crystal in the temperature range 10-290 K. The holmium orthovanadate HoVO3 reveals gradual orbital ordering (OO) below T-OO = 200K and orders antiferromagnetically at T-N =
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Peculiarities of linear thermal expansion of CuInS2 single crystal
International Nuclear Information System (INIS)
Akira, Nagaoka; Kenji, Yoshino; Hideto, Miyake
2010-01-01
Full text : I-III-VI 2 chalcopyrire semiconductors have made rapid progress in recent years. In addition chalcopyrite semiconductors show unique thermal properties. Usually, liner thermal expansion in semiconductors increases with increasing temperature. However, liner thermal expansion of most chalcopyrite semiconductors decreases at low temperature. For example, AgGaSe 2 shows decreasing the liner thermal expansion below 100 K 1 , 2). It is well known that high-quality single crystals of the I-III-VI 2 compounds are difficult to grow because most of the compounds grow through a peritectic reaction or a solid state transition during the cooling process. CuInS 2 single crystal can be grown by traveling heater method (THM), which is one of the solution growth techniques. Advantages of the THM growth are following that growth temperature is low compared with that of the other melt growth and larger crystals can be grown compared with a conventional solution growth. In a previous study, CuGaS 2 , CuGaSe 2 , CuGaTe 2 , CuInSe 2 ternary compounds have been obtained by the THM technique. In this work, it is investigated a liner thermal expansion of single crystal CuInS 2 by using X-ray diffraction. Measurement temperature was changed from 10 K to 300 K. From results of XRD measurement, it is calculated lattice constants of a and c axes and the liner thermal expansion. As a result, lattice constants of a axis increase with increasing temperature, that of c axis decreases with increasing temperature. The liner thermal expansion decreases for T 2 single crystal at low temperature
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Raghavan, Chinnambedu Murugesan; Chen, Tzu-Pei; Li, Shao-Sian; Chen, Wei-Liang; Lo, Chao-Yuan; Liao, Yu-Ming; Haider, Golam; Lin, Cheng-Chieh; Chen, Chia-Chun; Sankar, Raman; Chang, Yu-Ming; Chou, Fang-Cheng; Chen, Chun-Wei
2018-05-09
Organic-inorganic hybrid two-dimensional (2D) perovskites have recently attracted great attention in optical and optoelectronic applications due to their inherent natural quantum-well structure. We report the growth of high-quality millimeter-sized single crystals belonging to homologous two-dimensional (2D) hybrid organic-inorganic Ruddelsden-Popper perovskites (RPPs) of (BA) 2 (MA) n-1 Pb n I 3 n+1 ( n = 1, 2, and 3) by a slow evaporation at a constant-temperature (SECT) solution-growth strategy. The as-grown 2D hybrid perovskite single crystals exhibit excellent crystallinity, phase purity, and spectral uniformity. Low-threshold lasing behaviors with different emission wavelengths at room temperature have been observed from the homologous 2D hybrid RPP single crystals. Our result demonstrates that solution-growth homologous organic-inorganic hybrid 2D perovskite single crystals open up a new window as a promising candidate for optical gain media.
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Gao, Libo; Ren, Wencai; Xu, Huilong; Jin, Li; Wang, Zhenxing; Ma, Teng; Ma, Lai-Peng; Zhang, Zhiyong; Fu, Qiang; Peng, Lian-Mao; Bao, Xinhe; Cheng, Hui-Ming
2012-02-28
Large single-crystal graphene is highly desired and important for the applications of graphene in electronics, as grain boundaries between graphene grains markedly degrade its quality and properties. Here we report the growth of millimetre-sized hexagonal single-crystal graphene and graphene films joined from such grains on Pt by ambient-pressure chemical vapour deposition. We report a bubbling method to transfer these single graphene grains and graphene films to arbitrary substrate, which is nondestructive not only to graphene, but also to the Pt substrates. The Pt substrates can be repeatedly used for graphene growth. The graphene shows high crystal quality with the reported lowest wrinkle height of 0.8 nm and a carrier mobility of greater than 7,100 cm(2) V(-1) s(-1) under ambient conditions. The repeatable growth of graphene with large single-crystal grains on Pt and its nondestructive transfer may enable various applications.
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Dielectric behavior and phase transition in [111]-oriented PIN–PMN–PT single crystals under dc bias
Directory of Open Access Journals (Sweden)
Yuhui Wan
2014-01-01
Full Text Available Temperature and electric field dependences of the dielectric behavior and phase transition for [111]-oriented 0.23PIN–0.52PMN–0.25PT (PIN-PMN–0.25PT and 0.24PIN–0.43PMN–0.33PT (PIN–PMN–0.33PT single crystals were investigated over a temperature range from -100°C to 250°C using field-heating (FH dielectric measurements. The transition phenomenon from ferroelectric microdomain to macrodomain was found in rhombohedra (R phase region in the single crystals under dc bias. This transition temperature Tf of micro-to-macrodomain is sensitive to dc bias and move quickly to lower temperature with increasing dc bias. The phase transition temperatures in the two single crystals shift toward high temperature and the dielectric permittivities at the phase transition temperature decrease with increasing dc bias. Especially, the phase transition peaks are gradually broad in PIN–PMN–0.33PT single crystal with the increasing dc bias. Effects of dc bias on the dielectric behavior and phase transition in PIN–PMN–PT single crystals are discussed.
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Dielectric Losses and Charge Transfer in Antimony-Doped TlGaS2 Single Crystal
Asadov, S. M.; Mustafaeva, S. N.
2018-03-01
Effect of semimetallic antimony (0.5 mol % Sb) on the dielectric properties and ac-conductivity of TlGaS2-based single crystals grown by the Bridgman-Stockbarger method has been studied. The experimental results on the frequency dispersion of dielectric coefficients and the conductivity of TlGa0.995Sb0.005S2 single crystals allowed the revealing of the dielectric loss nature, the charge transfer mechanism, and the estimation of the parameters of the states localized in the energy gap. The antimony-doping of the TlGaS2 single crystal leads to an increase in the density of states near the Fermi level and a decrease in the average time and average distance of hopes.
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Epitaxial Growth of an Organic p-n Heterojunction: C60 on Single-Crystal Pentacene.
Nakayama, Yasuo; Mizuno, Yuta; Hosokai, Takuya; Koganezawa, Tomoyuki; Tsuruta, Ryohei; Hinderhofer, Alexander; Gerlach, Alexander; Broch, Katharina; Belova, Valentina; Frank, Heiko; Yamamoto, Masayuki; Niederhausen, Jens; Glowatzki, Hendrik; Rabe, Jürgen P; Koch, Norbert; Ishii, Hisao; Schreiber, Frank; Ueno, Nobuo
2016-06-01
Designing molecular p-n heterojunction structures, i.e., electron donor-acceptor contacts, is one of the central challenges for further development of organic electronic devices. In the present study, a well-defined p-n heterojunction of two representative molecular semiconductors, pentacene and C60, formed on the single-crystal surface of pentacene is precisely investigated in terms of its growth behavior and crystallographic structure. C60 assembles into a (111)-oriented face-centered-cubic crystal structure with a specific epitaxial orientation on the (001) surface of the pentacene single crystal. The present experimental findings provide molecular scale insights into the formation mechanisms of the organic p-n heterojunction through an accurate structural analysis of the single-crystalline molecular contact.
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Synthesis of formamidinium lead iodide perovskite bulk single crystal and its optical properties
Zheng, Hongge; Duan, Junjie; Dai, Jun
2017-07-01
Formamidinium lead iodide (FAPbI3) is a promising hybrid perovskite material for optoelectronic devices. We synthesized bulk single crystal FAPbI3 by a rapid solution crystallization method. X-ray diffraction (XRD) was performed to characterize the crystal structure. Temperature-dependent photoluminescence (PL) spectra of the bulk single crystal FAPbI3 were measured from 10 to 300 K to explain PL recombination mechanism. It shows that near band edge emission blueshifts with the temperature increasing from 10 to 120 K and from 140 K to room temperature, a sudden emission band redshift demonstrates near 140 K because of the phase transition from orthorhombic phase to cubic phase. From the temperature-dependent PL spectra, the temperature coefficients of the bandgap and thermal activation energies of FAPbI3 perovskite are fitted.
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Structural science using single crystal and pulse neutron scattering
International Nuclear Information System (INIS)
Noda, Yukio; Kimura, Hiroyuki; Watanabe, Masashi; Ishikawa, Yoshihisa; Tamura, Itaru; Arai, Masatoshi; Takahashi, Miwako; Ohshima, Ken-ichi; Abe, Hiroshi; Kamiyama, Takashi
2008-01-01
The application to single crystal neutron structural analysis is overviewed. Special attention is paid to the pulse neutron method, which will be available soon under J-PARC project in Japan. New proposal and preliminary experiment using Sirius at KENS are described. (author)
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Bulk study of a DyNiAl single crystal
Czech Academy of Sciences Publication Activity Database
Prchal, J.; Andreev, Alexander V.; Javorský, P.; Honda, F.; Jurek, Karel
272-276, - (2004), e419-e420 ISSN 0304-8853 R&D Projects: GA ČR GA106/02/0943 Keywords : rare-earth * DyNiAl * magnetic anisotropy * single crystal Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.031, year: 2004
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Single-crystal FCC and DHCP phases in Ce/Pr superlattices
International Nuclear Information System (INIS)
Lee, S.; Goff, J.P.; Ward, R.C.C.; Wells, M.R.; McIntyre, G.J.
2002-01-01
Cerium usually comprises a mixture of polycrystalline FCC and DHCP allotropes. Single-crystal Ce has been stabilised in Ce/Pr superlattices grown using molecular beam epitaxy. It is found that FCC or DHCP phases can be obtained depending on superlattice composition and growth conditions. Low-temperature neutron scattering was performed on Ce/Pr samples using the triple-axis spectrometer D10 at the ILL. Such measurements revealed one sample, [Ce 20 Pr 20 ] 60 , to be a single crystal with a DHCP unit cell; while another, [Ce 30 Pr 10 ] 56 , was a mixture of FCC and DHCP phases. Antiferromagnetic ordering of magnetic moments was observed in the DHCP sample (T N =11.1 K) with a magnetic structure similar to that found in bulk β-Ce. Surprisingly, the magnetic ordering was found to be confined to single Ce blocks. Furthermore, it was found that, at low temperatures, the lattice contraction observed for bulk FCC Ce was suppressed in Ce/Pr superlattices. (orig.)
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Mechanism of band-edge luminescence in cuprous iodide single crystals
International Nuclear Information System (INIS)
Gao, Pan; Gu, Mu; Liu, Xi; Liu, Bo; Zheng, Yan-Qing; Shi, Er-Wei; Shi, Jun-Yan; Zhang, Guo-bin
2014-01-01
Highlights: • The luminescence properties of CuI crystals are influenced by the quality of the as-grown crystals. • The emission peaks of free-exciton and bound-exciton are observed in the CuI single crystals. • The ultrafast component luminescence is warranted to the donor-acceptor pair recombination. • The exciton absorption and electron excitation multiplication processes were observed in CuI. - Abstract: The photoluminescence spectra of CuI crystals using synchrotron radiation as an excitation light source were obtained at 60 K. The emission peaks at 405, 415, 420 and 443 nm were observed. The possible origins of these peaks were discussed by the temperature dependence of luminescence spectra for CuI material. Meanwhile, the photoluminescence spectra of CuI powder with different excitation intensity were measured and the ultrafast luminescence component of CuI crystals was warranted to be attributed to the recombination of donor acceptor pair. Furthermore, the excitation process was studied by measuring the photoluminescence excitation spectra of CuI crystals and powder
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Defects of diamond single crystal grown under high temperature and high pressure
Energy Technology Data Exchange (ETDEWEB)
Su, Qingcai, E-mail: suqc@sdu.edu.cn [Key Laboratory of Liquid Structure and Heredity of Materials (Ministry of Education), Shandong University, Jinan, P. R. China, 250061 (China); School of Materials Science and Engineering, Shandong University, Jinan, P. R. China, 250061 (China); Shandong Engineering Research Center for Superhard Materials, Zoucheng, P. R. China 273500 (China); Zhang, Jianhua [School of Mechanical Engineering, Shandong University, Jinan, P. R. China, 250061 (China); Li, Musen [Key Laboratory of Liquid Structure and Heredity of Materials (Ministry of Education), Shandong University, Jinan, P. R. China, 250061 (China); School of Materials Science and Engineering, Shandong University, Jinan, P. R. China, 250061 (China); Shandong Engineering Research Center for Superhard Materials, Zoucheng, P. R. China 273500 (China)
2013-11-01
The diamond single crystal, synthesized with Fe–Ni–C–B system of catalyst under high temperature and high pressure, had been observed by field emission scanning electron microscope and transmission electron microscope. The presence of a cellular structure suggested that the diamond grew from melted catalyst solution and there existed a zone of component supercooling zone in front of the solid–liquid interface. The main impurities in the diamond crystal was (FeNi){sub 23}C{sub 6}. The triangle screw pit revealed on the (111) plane was generated by the screw dislocation meeting the diamond (111) plane at the points of emergence of dislocations. A narrow twin plane was formed between the two (111) plane. - Highlights: • High pressure, high temperature synthesis of diamond single crystal. • Fe–Ni–C–B used as catalyst, graphite as carbon source. • The main impurity in the diamond crystal was (FeNi){sub 23}C{sub 6}. • Surface defects arose from screw dislocations and stacking faults.
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Oriented hydroxyapatite single crystals produced by the electrodeposition method
Energy Technology Data Exchange (ETDEWEB)
Santos, E.A. dos, E-mail: euler@ufs.br [INSA - Groupe Ingenierie des Surfaces, 24, Bld de la Victoire, 67084 Strasbourg (France); IPCMS - Departement de Surfaces et Interfaces, 23, rue du Loess, BP 43, 67034 Strasbourg (France); Moldovan, M.S. [INSA - Groupe Ingenierie des Surfaces, 24, Bld de la Victoire, 67084 Strasbourg (France); IPCMS - Departement de Surfaces et Interfaces, 23, rue du Loess, BP 43, 67034 Strasbourg (France); Jacomine, L. [INSA - Groupe Ingenierie des Surfaces, 24, Bld de la Victoire, 67084 Strasbourg (France); Mateescu, M. [IS2M - Equipe Interaction Surface-Matiere Vivant, 15, rue Jean Starcky, BP 2488, 68057 Mulhouse (France); Werckmann, J. [IPCMS - Departement de Surfaces et Interfaces, 23, rue du Loess, BP 43, 67034 Strasbourg (France); Anselme, K. [IS2M - Equipe Interaction Surface-Matiere Vivant, 15, rue Jean Starcky, BP 2488, 68057 Mulhouse (France); Mille, P.; Pelletier, H. [INSA - Groupe Ingenierie des Surfaces, 24, Bld de la Victoire, 67084 Strasbourg (France)
2010-05-25
We propose here the use of cathodic electrodeposition as tool to fabricate implant coatings consisting in nano/micro single crystals of hydroxyapatite (HA), preferentially orientated along the c-axis. Coating characterization is the base of this work, where we discuss the mechanisms related to the deposition of oriented hydroxyapatite thin films. It is shown that when deposited on titanium alloys, the HA coating is constituted by two distinct regions with different morphologies: at a distance of few microns from the substrate, large HA single crystals are oriented along the c-axis and appear to grow up from a base material, consisting in an amorphous HA. This organized system has a great importance for cell investigation once the variables involved in the cell/surface interaction are reduced. The use of such systems could give a new insight on the effect of particular HA orientation on the osteoblast cells.
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International Nuclear Information System (INIS)
Yu, Guangbin; Tang, Chaolong; Song, Jinhui; Lu, Wenqiang
2014-01-01
Based on conductivity characterization of single crystal zinc oxide (ZnO) micro/nanobelt (MB/NB), we further investigate the physical mechanism of nonlinear intrinsic resistance-length characteristic using finite element method. By taking the same parameters used in experiment, a model of nonlinear anisotropic resistance change with single crystal MB/NB has been deduced, which matched the experiment characterization well. The nonlinear resistance-length comes from the different electron moving speed in various crystal planes. As the direct outcome, crystallography of the anisotropic semiconducting MB/NB has been identified, which could serve as a simple but effective method to identify crystal growth direction of single crystal semiconducting or conductive nanomaterial
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Spiro-OMeTAD single crystals: Remarkably enhanced charge-carrier transport via mesoscale ordering
Shi, Dong
2016-04-15
We report the crystal structure and hole-transport mechanism in spiro-OMeTAD [2,2′,7,7′-tetrakis(N,N-di-p-methoxyphenyl-amine)9,9′-spirobifluorene], the dominant hole-transporting material in perovskite and solid-state dye-sensitized solar cells. Despite spiro-OMeTAD’s paramount role in such devices, its crystal structure was unknown because of highly disordered solution-processed films; the hole-transport pathways remained ill-defined and the charge carrier mobilities were low, posing a major bottleneck for advancing cell efficiencies. We devised an antisolvent crystallization strategy to grow single crystals of spiro-OMeTAD, which allowed us to experimentally elucidate its molecular packing and transport properties. Electronic structure calculations enabled us to map spiro-OMeTAD’s intermolecular charge-hopping pathways. Promisingly, single-crystal mobilities were found to exceed their thin-film counterparts by three orders of magnitude. Our findings underscore mesoscale ordering as a key strategy to achieving breakthroughs in hole-transport material engineering of solar cells.
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Study of the possibility of growing germanium single crystals under low temperature gradients
Moskovskih, V. A.; Kasimkin, P. V.; Shlegel, V. N.; Vasiliev, Y. V.; Gridchin, V. A.; Podkopaev, O. I.; Zhdankov, V. N.
2014-03-01
The possibility of growing germanium single crystals under low temperature gradients in order to produce a dislocation-free material has been studied. Germanium crystals with a dislocation density of about 100-200 cm-2 have been grown in a system with a weight control of crystal growth at maximum axial gradients of about 1.5 K/cm.
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Chromium and molybdenum diffusion in tungsten single crystals
International Nuclear Information System (INIS)
Klotsman, S.M.; Koloskov, V.M.; Osetrov, S.V.; Polikarpova, I.P.; Tatarinova, G.N.; Timofeev, A.N.
1989-01-01
Consideration is given to results of measuring temperature dependences of diffusion coefficients of homovalent impurities of chromium and molybdenum in tungsten single crystals. It is concluded that the difference of activation energies of selfdiffusion and impurity diffusion in the system 'tungsten-homovalent impurity' is conditioned by interaction of screened potentials of impurity and vacancy with Lazarus-Le Claire model
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Surface structure modification of single crystal graphite after slow, highly charged ion irradiation
Alzaher, I.; Akcöltekin, S.; Ban-d'Etat, B.; Manil, B.; Dey, K. R.; Been, T.; Boduch, P.; Rothard, H.; Schleberger, M.; Lebius, H.
2018-04-01
Single crystal graphite was irradiated by slow, highly charged ions. The modification of the surface structure was studied by means of Low-Energy Electron Diffraction. The observed damage cross section increases with the potential energy, i.e. the charge state of the incident ion, at a constant kinetic energy. The potential energy is more efficient for the damage production than the kinetic energy by more than a factor of twenty. Comparison with earlier results hints to a strong link between early electron creation and later target atom rearrangement. With increasing ion fluence, the initially large-scale single crystal is first transformed into μ m-sized crystals, before complete amorphisation takes place.
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Energy Technology Data Exchange (ETDEWEB)
Miah, M. Idrish, E-mail: m.miah@griffith.edu.a [Nanoscale Science and Technology Centre, Griffith University, Nathan, Brisbane, QLD 4111 (Australia)] [Biomolecular and Physical Sciences, Griffith University, Nathan, Brisbane, QLD 4111 (Australia)] [Department of Physics, University of Chittagong, Chittagong 4331 (Bangladesh)
2009-09-14
Optical limiting properties of the single crystals of cadmium iodide are investigated using ns laser pulses. It is found that the transmissions in the crystals increase with increasing temperature. However, they limit the transmissions at high input powers. The limiting power is found to be higher at higher temperature. From the measured transmission data, the photon absorption coefficients are estimated. The temperature dependence of the coefficients shows a decrease in magnitude with increasing temperature. This might be due to the temperature-dependent bandgap shift of the material. The results demonstrate that the cadmium iodide single crystals are promising materials for applications in optical power limiting devices.
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International Nuclear Information System (INIS)
Miah, M. Idrish
2009-01-01
Optical limiting properties of the single crystals of cadmium iodide are investigated using ns laser pulses. It is found that the transmissions in the crystals increase with increasing temperature. However, they limit the transmissions at high input powers. The limiting power is found to be higher at higher temperature. From the measured transmission data, the photon absorption coefficients are estimated. The temperature dependence of the coefficients shows a decrease in magnitude with increasing temperature. This might be due to the temperature-dependent bandgap shift of the material. The results demonstrate that the cadmium iodide single crystals are promising materials for applications in optical power limiting devices.
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Studies on various properties of pure and Li-doped Barium Hydrogen Phosphate (BHP) single crystals
Energy Technology Data Exchange (ETDEWEB)
Nallamuthu, D. [Department of Physics, Aditanar College of Arts and Science, Tiruchendur 628216, Tamil Nadu (India); Selvarajan, P., E-mail: pselvarajanphy@yahoo.co.i [Department of Physics, Aditanar College of Arts and Science, Tiruchendur 628216, Tamil Nadu (India); Freeda, T.H. [Physics Research Centre, S.T. Hindu College, Nagercoil 629002 (India)
2010-12-15
Single crystals of pure and Li-doped barium hydrogen phosphate (BHP) were grown by solution method with gel technique. Various properties of the harvested crystals were studied by carrying out single crystal and powder XRD, FTIR, TG/DTA, microhardness and dielectric studies. Atomic absorption study was carried out for Li-doped BHP crystal to check the presence of Li dopants. Unit cell dimensions and diffracting planes of the grown crystals have been identified from XRD studies. Functional groups of the title compounds have been identified from FTIR studies. Density of the grown crystals was calculated using the XRD data. Thermal stability of the samples was checked by TG/DTA studies. Mechanical and dielectric characterizations of the harvested pure and Li-doped BHP crystals reveal the mechanical strength and ferroelectric transition. The observed results are reported and discussed.
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Reactive Stresses in Ni49Fe18Ga27Co6 Shape-Memory-Alloy Single Crystals
Averkin, A. I.; Krymov, V. M.; Guzilova, L. I.; Timashov, R. B.; Soldatov, A. V.; Nikolaev, V. I.
2018-03-01
The reactive stresses induced in Ni49Fe18Ga27Co6-alloy single crystals during martensitic transformations with a limited possibility of shape-memory-strain recovery have been experimentally studied. The data on these crystals are compared with the results obtained previously for Cu-Al-Ni, Ni-Ti, and Ni‒Fe-Ga crystals. The potential of application of the Ni49Fe18Ga27Co6 single crystals in designing drives and power motors is demonstrated.
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International Nuclear Information System (INIS)
Winkler, Justin M; Lukishova, Svetlana G; Bissell, Luke J
2013-01-01
Definite circular and linear polarizations of room-temperature single-photon sources, which can serve as polarization bases for quantum key distribution, are produced by doping planar-aligned liquid crystal hosts with single fluorescence emitters. Chiral 1-D photonic bandgap microcavities for a single handedness of circularly polarized light were prepared from both monomeric and oligomeric cholesteric liquid crystals. Fluorescent emitters, such as nanocrystal quantum dots, nitrogen vacancy color centers in nanodiamonds, and rare-earth ions in nanocrystals, were doped into these microcavity structures and used to produce circularly polarized fluorescence of definite handedness. Additionally, we observed circularly polarized resonances in the spectrum of nanocrystal quantum dot fluorescence at the edge of the cholesteric microcavity's photonic stopband. For this polarization we obtained a ∼4.9 enhancement of intensity compared to the polarization of the opposite handedness that propagates without photonic bandgap microcavity effects. Such a resonance is indicative of coupling of quantum dot fluorescence to the cholesteric microcavity mode. We have also used planar-aligned nematic liquid crystal hosts to align DiI dye molecules doped into the host, thereby providing a single-photon source of linear polarization of definite direction. Antibunching is demonstrated for fluorescence of nanocrystal quantum dots, nitrogen vacancy color centers, and dye molecules in these liquid crystal structures.
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Single-crystal elastic constants of a plutonium-gallium alloy
International Nuclear Information System (INIS)
Moment, R.L.
1976-01-01
The single-crystal elastic constants of a plutonium-1 wt % gallium alloy were determined at room temperature by measuring ultrasonic sound-wave velocities. The three independent elastic constants of this face-centered cubic delta-phase alloy were determined from the longitudinal and the two shear-wave velocities, all along a direction. Their values are C 11 =3.628, C 12 =2.673 and C 44 =3.359 in units of 10 10 N/m 2 ; the respective errors are estimated to be 1%, 1%, and 0.3 %. The Zener anisotropy ratio is 7.03, almost twice that known for any other fcc metal, and falls among the ratios for the body centered cubic alkali metals, which are noted for their high elastic anisotropy. Polycrystalline elastic constants calculated from the single-crystal data are Young's modulus E=4.064, the shear modulus G=1.596 and the bulk modulus (reciprocal compressibility) B=2.991, all in units of 10 10 N/m 2 , and Poisson's ratio γ=0.27. These values of E and G are both lower than those obtained by Taylor, Linford and Dean from measurements on polycrystalline specimens. Within a single crystal, the longitudinal sound velocity varies with direction by a factor of 1.4 and the transverse velocity by a factor of 2.6. The maximum Young's modulus (along ) was 5.4 times larger than the minimum (along ). The Debye temperature was calculated to be 105.7 K at 293 K and estimated to be 114 K at 0.K. (Auth.)
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Liang, Guoying; Shen, Jie; Zhang, Jie; Zhong, Haowen; Cui, Xiaojun; Yan, Sha; Zhang, Xiaofu; Yu, Xiao; Le, Xiaoyun
2017-10-01
Improving antifatigue performance of silicon substrate is very important for the development of semiconductor industry. The cracking behavior of silicon under intense pulsed ion beam irradiation was studied by numerical simulation in order to understand the mechanism of induced surface peeling observed by experimental means. Using molecular dynamics simulation based on Stillinger Weber potential, tensile effect on crack growth and propagation in single crystal silicon was investigated. Simulation results reveal that stress-strain curves of single crystal silicon at a constant strain rate can be divided into three stages, which are not similar to metal stress-strain curves; different tensile load velocities induce difference of single silicon crack formation speed; the layered stress results in crack formation in single crystal silicon. It is concluded that the crack growth and propagation is more sensitive to strain rate, tensile load velocity, stress distribution in single crystal silicon.
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Method of Promoting Single Crystal Growth During Melt Growth of Semiconductors
Su, Ching-Hua (Inventor)
2013-01-01
The method of the invention promotes single crystal growth during fabrication of melt growth semiconductors. A growth ampoule and its tip have a semiconductor source material placed therein. The growth ampoule is placed in a first thermal environment that raises the temperature of the semiconductor source material to its liquidus temperature. The growth ampoule is then transitioned to a second thermal environment that causes the semiconductor source material in the growth ampoule's tip to attain a temperature that is below the semiconductor source material's solidus temperature. The growth ampoule so-transitioned is then mechanically perturbed to induce single crystal growth at the growth ampoule's tip.
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Large rotating magnetocaloric effect in ErAlO3 single crystal
Directory of Open Access Journals (Sweden)
X. Q. Zhang
2017-05-01
Full Text Available Magnetic and magnetocaloric properties of ErAlO3 single crystal were investigated. Magnetization of ErAlO3 shows obvious anisotropy when magnetic field is applied along the a, b and c axes, which leads to large anisotropic magnetic entropy change. In particular, large rotating field entropy change from the b to c axis within the bc plane is obtained and reaches 9.7 J/kg K at 14 K in a field of 5 T. This suggests the possibility of using ErAlO3 single crystal for magnetic refrigerators by rotating its magnetization vector rather than moving it in and out of the magnet.
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Defect studies of ZnO single crystals electrochemically doped with hydrogen
Čížek, J.; Žaludová, N.; Vlach, M.; Daniš, S.; Kuriplach, J.; Procházka, I.; Brauer, G.; Anwand, W.; Grambole, D.; Skorupa, W.; Gemma, R.; Kirchheim, R.; Pundt, A.
2008-03-01
Various defect studies of hydrothermally grown (0001) oriented ZnO crystals electrochemically doped with hydrogen are presented. The hydrogen content in the crystals is determined by nuclear reaction analysis and it is found that already 0.3at.% H exists in chemically bound form in the virgin ZnO crystals. A single positron lifetime of 182ps is detected in the virgin crystals and attributed to saturated positron trapping at Zn vacancies surrounded by hydrogen atoms. It is demonstrated that a very high amount of hydrogen (up to ˜30at.%) can be introduced into the crystals by electrochemical doping. More than half of this amount is chemically bound, i.e., incorporated into the ZnO crystal lattice. This drastic increase of the hydrogen concentration is of marginal impact on the measured positron lifetime, whereas a contribution of positrons annihilated by electrons belonging to O-H bonds formed in the hydrogen doped crystal is found in coincidence Doppler broadening spectra. The formation of hexagonal shape pyramids on the surface of the hydrogen doped crystals by optical microscopy is observed and discussed.
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Orientation effect on recovery and recrystallization of cold rolled niobium single crystals
Energy Technology Data Exchange (ETDEWEB)
Srinivasan, R. [Center for Accelerated Maturation of Materials, Department of Materials Science and Engineering, Ohio State University, Columbus, OH 43210 (United States)], E-mail: rajagopalan.5@osu.edu; Viswanathan, G.B.; Levit, V.I.; Fraser, H.L. [Center for Accelerated Maturation of Materials, Department of Materials Science and Engineering, Ohio State University, Columbus, OH 43210 (United States)
2009-05-15
Single crystal sheets of niobium with initial orientations of (0 0 1) [11-bar0], (1 1 0) [11-bar 0] and (1 1 1) [11-bar0] were rolled at room temperature in the strain range of 25-50%. The deformed specimens were vacuum annealed at temperatures of 800 deg. C, 1000 deg. C, and 1200 deg. C for 3 h. TEM, SEM-OIM and optical microscopy revealed orientation stability in (0 0 1) and (1 1 0) rolled samples with no recrystallization observed after annealing. Samples rolled along (1 1 1) partially recrystallized after annealing at 1000 deg. C and 1200 deg. C. A relatively small increase was observed in hardness of (0 0 1) rolled crystals between 25% and 50% strain, implying low work hardening rates. (1 1 1) rolled samples showed higher hardening rates, and enhanced recovery in hardness values after annealing, due to partial recrystallization. Conditions have been identified for the deformation and annealing of niobium single crystals, enabling the preservation of single crystal structure and near-complete recovery of mechanical properties. A simple crystallographic model is proposed, giving an explanation for the observed orientation stability in (0 0 1) and (1 1 0) rolled samples, and the tendency towards instability and recrystallization in (1 1 1) rolled samples.
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Matsuzaki, Tomoya; Shibata, Yosei; Takeda, Risa; Ishinabe, Takahiro; Fujikake, Hideo
2017-01-01
For directional control of organic single crystals, we propose a crystal growth method using liquid crystal as the solvent. In this study, we examined the formation of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) single crystals using a parallel aligned liquid crystal (LC) cell and rubbing-treated polyimide films in order to clarify the effects of LC alignment on anisotropic C8-BTBT crystal growth. Based on the results, we found that the crystal growth direction of C8-BTBT single crystals was related to the direction of the aligned LC molecules because of rubbing treatment. Moreover, by optical evaluation, we found that the C8-BTBT single crystals have a aligned molecular structure.
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Directory of Open Access Journals (Sweden)
Xiang Shi
2016-11-01
Full Text Available This work discussed the optimized cut of single crystal lead magnoniobate titanate (PMNT for use of ring type travelling wave ultrasonic motors (USMs, according to anisotropic analysis on electromechanical properties. The selection criterion of crystal orientation relies on the circular uniformity of the induced travelling wave amplitude on the stator surface. By calculating the equivalent elastic coefficient c11 and lateral piezoelectric constant d31, the optimal crystal orientations were proposed for PMNT single crystals poled along different directions. For single crystal poled along c directions, the optimal orientation lies along [001]c with d31=-1335pC/N and k31=0.87. The crystallographic orientation [025]c is the optimized orientation for single crystals poled along c direction with d31=199pC/N and k31=0.55. The optimal orientation of 1R configuration is [332¯]c with a large enhancement of d31 = 1201 and k31=0.92.
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Growth and characterization of unidirectional benzil single crystal for photonic applications
Saranraj, A.; Thirupathy, J.; Dhas, S. Sahaya Jude; Jose, M.; Vinitha, G.; Dhas, S. A. Martin Britto
2018-06-01
Organic nonlinear optical benzil single crystal of fine quality with the dimensions of 168 × 14 mm2 was successfully grown in (100) plane from saturated solution by unidirectional SR method. The structural identity of the grown crystal was confirmed by powder XRD. High-resolution X-ray diffraction analysis indicates the crystalline perfection of the grown benzil crystal. The optical analysis was carried out by UV-visible spectroscopy which shows that the benzil crystal's cut off wavelength is 437 nm. The dielectric constant and dielectric loss of benzil crystal are found to be very much depending upon temperature and frequency. Ferroelectric nature of grown crystal was identified by P- E hysteresis analysis and to find the values of spontaneous polarization and coercive field. The laser damage threshold energy was studied with the help of Nd:YAG laser. The presence of third harmonic generation was identified by z-scan techniques.
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A dislocation-based crystal plasticity framework for dynamic ductile failure of single crystals
Nguyen, Thao; Luscher, D. J.; Wilkerson, J. W.
2017-11-01
A framework for dislocation-based viscoplasticity and dynamic ductile failure has been developed to model high strain rate deformation and damage in single crystals. The rate-dependence of the crystal plasticity formulation is based on the physics of relativistic dislocation kinetics suited for extremely high strain rates. The damage evolution is based on the dynamics of void growth, which are governed by both micro-inertia as well as dislocation kinetics and dislocation substructure evolution. An averaging scheme is proposed in order to approximate the evolution of the dislocation substructure in both the macroscale as well as its spatial distribution at the microscale. Additionally, a concept of a single equivalent dislocation density that effectively captures the collective influence of dislocation density on all active slip systems is proposed here. Together, these concepts and approximations enable the use of semi-analytic solutions for void growth dynamics developed in (Wilkerson and Ramesh, 2014), which greatly reduce the computational overhead that would otherwise be required. The resulting homogenized framework has been implemented into a commercially available finite element package, and a validation study against a suite of direct numerical simulations was carried out.
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Ultraviolet laser-induced voltages in LaSrAlO4 single crystal
International Nuclear Information System (INIS)
Zhi-Qing, Lü; Kun, Zhao; Song-Qing, Zhao; Hui, Zhao; Qing-Li, Zhou
2009-01-01
Laser-induced ultrafast photovoltaic effect is observed in LaSrAlO 4 single crystal at ambient temperature without any applied bias. An open-circuit photovoltage is obtained when the wafer is irradiated by a 248-nm-KrF laser pulse of 20 ns duration. The response time and full width at half maximum of the photovoltage pulse are 6 ns and 19 ns, respectively, indicating that LaSrAlO 4 single crystal has potential application in ultraviolet detector. (condensed matter: electronic structure, electrical, magnetic, and optical properties)
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Cavity Pull Rod: Device to Promote Single Crystal Growth from the Melt
Goldsby, Jon (Inventor)
2017-01-01
A pull rod for use in producing a single crystal from a molten alloy is provided that includes an elongated rod having a first end and a second end, a first cavity defined at the first end and a second cavity defined at the first end and in communication with the first cavity. The first cavity receives the molten alloy and the second cavity vents a gas from the molten alloy to thereby template a single crystal when the pull rod is dipped into and extracted from the molten alloy.
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Synthesis and Single Crystal Structures of Substituted-1,3-Selenazol-2-amines
Directory of Open Access Journals (Sweden)
Guoxiong Hua
2016-12-01
Full Text Available The synthesis and X-ray single crystal structures of a series of new 4-substituted-1,3-selenazol-2-amines is reported. The efficient preparation of these compounds was carried out by two-component cyclization of the selenoureas with equimolar amounts of α-haloketones. The selenoureas were obtained from the reaction of Woollins’ reagent with cyanamides, followed by hydrolysis with water. All new compounds have been characterized by IR spectroscopy, multi-NMR (1H, 13C, 77Se spectroscopy, accurate mass measurement and single crystal X-ray structure analysis.
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International Nuclear Information System (INIS)
Wan Xinming; Zhao Xiangyong; Chan, H.L.W.; Choy, C.L.; Luo Haosu
2005-01-01
The transmission spectra of rhombohedral 0.71Pb(Mg 1/3 Nb 2/3 )O 3 -0.29PbTiO 3 (PMN-0.29PT) and tetragonal PMN-0.38PT single crystals were obtained in the main crystallographic directions , and . The absorption coefficients were computed and the optical bandgaps were calculated in both direct and indirect transitions. The energy of phonons contributing in the indirect transition was also calculated. For PMN-0.38PT single crystal in all the three directions, the values of direct bandgaps E gd are all slightly lower than those of PMN-0.29PT single crystal, while the indirect bandgaps E gi are all higher. For different crystallographic directions, the values of E gi for -direction are lower compared with and directions, both for PMN-0.29PT and PMN-0.38PT single crystals. Some discussions about the B-site cation d-orbits and the O-anion 2p orbits that determine the basic energy level of the single crystals are presented. The optical transition mechanism was also discussed
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The measurement of Ksub(IC) in single crystal SiC using the indentation method
International Nuclear Information System (INIS)
Henshall, J.L.; Brookes, C.A.
1985-01-01
The present work has concentrated on investigating the underlying fracture toughness behaviour of SiC single crystals. This material was chosen because of the commercial importance of the various polycrystalline forms of SiC and the relative ready availability of reasonably sized single crystals. This study has examined the feasibility of using the indentation technique to determine Ksub(IC) in SiC single crystals. This requires much more less complex experimentation and also affords the possibility of being able to use this method to study the orientation dependence of Ksub(IC) in a similar manner to that used to investigate anisotropy in indentation hardness behaviour. A single crystal of 6H-SiC was used for all the hardness and conventional Ksub(IC) results reported here. The particular polytype and orientation were determined using the Laue X-ray method. All the measurements were made under ambient conditions. Three-point bend tests, with a 6 mm span on single edge notched beams, SENB, orientated such that the plane of the notch was brace 112-bar0 brace and the crack propagation direction were used for the conventional Ksub(IC) tests. The hardness indentations were all made on one particular SENB test piece after it had been fractured. The results are discussed. (author)
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Fluorescent detection of single tracks of alpha particles using lithium fluoride crystals
International Nuclear Information System (INIS)
Bilski, P.; Marczewska, B.
2017-01-01
Lithium fluoride single crystals were successfully used for fluorescent imaging of single tracks of alpha particles. This was realized with a standard wide-field fluorescent microscope equipped with a 100× objective. Alpha particles create F_2 and F_3"+ color centers in LiF crystals. The subsequent illumination with the blue light (wavelength around 445 nm), excites these centers and produces fluorescence with a broad band peaked at 670 nm. The observed tracks of alpha particles have diameter of about 500 nm. Focusing of the microscope at different depths in a LiF crystal, enables imaging changes of shape and position of tracks, allowing for visualization of their paths. These encouraging results are the first step towards practical application of LiF as fluorescent nuclear track detectors.
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Sliding three-phase contact line of printed droplets for single-crystal arrays
International Nuclear Information System (INIS)
Kuang, Minxuan; Wu, Lei; Li, Yifan; Gao, Meng; Zhang, Xingye; Jiang, Lei; Song, Yanlin
2016-01-01
Controlling the behaviours of printed droplets is an essential requirement for inkjet printing of delicate three-dimensional (3D) structures or high-resolution patterns. In this work, molecular deposition and crystallization are regulated by manipulating the three-phase contact line (TCL) behaviour of the printed droplets. The results show that oriented single-crystal arrays are fabricated based on the continuously sliding TCL. Owing to the sliding of the TCL on the substrate, the outward capillary flow within the evaporating droplet is suppressed and the molecules are brought to the centre of the droplet, resulting in the formation of a single crystal. This work provides a facile strategy for controlling the structures of printed units by manipulating the TCL of printed droplets, which is significant for realizing high-resolution patterns and delicate 3D structures. (paper)
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Phonon anomalies in optical spectra of LiNbO3 single crystals
Directory of Open Access Journals (Sweden)
ANDREJA VALCIC
2004-06-01
Full Text Available LiNbO3 single crystals were grown by the Czochralski technique in an air atmosphere. The critical crystal diameter Dc = 1.5 cm and the critical rate of rotation wc = 35 rpm were calculated by equations from the hydrodynamics of the melt. The domain inversion was carried out at 1430 K using a 3.75 V/cm electric field for 10 min. The obtained crystals were cut, polished and etched to determine the presence of dislocations and single domain structures. The optical properties were studied by infrared and Raman spectroscopy as a function of temperature. With decreasing temperature, an atypical behaviour of the phonon modes could be seen in the ferroelectrics LiNbO3. The obtained results are discussed and compared with published data.
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Growth and characterization of LiInSe2 single crystals
Ma, Tianhui; Zhu, Chongqiang; Lei, Zuotao; Yang, Chunhui; Sun, Liang; Zhang, Hongchen
2015-04-01
Large and crack-free LiInSe2 single crystals were obtained by the vertical gradient freezing method with adding a temperature oscillation technology in a two-zone furnace. X-ray diffraction data showed that the pure LiInSe2 compound was synthesized. The grown crystals had different color depending on melt composition. The atomic ratios of elements of LiInSe2 crystals were obtained by an Inductively Coupled Plasma-Atomic Emission Spectrometry (ICP-AES), and the structural formula were calculated according to the relative contents of elements. The average absorption coefficients were estimated by using average reflection indices. The absorption coefficients of the thermal annealing samples are 0.6 cm-1 at 2-3 μm. The transparent range of our LiInSe2 crystals is from 0.6 μm to 13.5 μm.
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Mahadevan, M.; Arivanandhan, M.; Elangovan, K.; Anandan, P.; Ramachandran, K.
2017-07-01
Good quality single crystals of sodium acid phthalate (NaAP) were grown by slow evaporation technique. Single crystal X-ray diffraction study of the grown crystal reveals that the crystal belongs to orthorhombic system with space group B2ab. Fourier transform infrared spectrum confirms the presence of the functional groups of the grown material. Inductively coupled plasma emission spectroscopy analysis is used to confirm the presence of Na element in the sample. Thermal analysis of the NaAP crystal shows that the crystal is stable up to 140°C. Optical transmittance of the grown crystal was recorded in the wavelength range from 200 and 800 nm using UV-Vis-NIR spectrophotometer. The second harmonic generation of NaAP was analysed using Kurtz powder technique.
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Helium diffusion in irradiated boron carbide
International Nuclear Information System (INIS)
Hollenberg, G.W.
1981-03-01
Boron carbide has been internationally adopted as the neutron absorber material in the control and safety rods of large fast breeder reactors. Its relatively large neutron capture cross section at high neutron energies provides sufficient reactivity worth with a minimum of core space. In addition, the commercial availability of boron carbide makes it attractive from a fabrication standpoint. Instrumented irradiation experiments in EBR-II have provided continuous helium release data on boron carbide at a variety of operating temperatures. Although some microstructural and compositional variations were examined in these experiments most of the boron carbide was prototypic of that used in the Fast Flux Test Facility. The density of the boron carbide pellets was approximately 92% of theoretical. The boron carbide pellets were approximately 1.0 cm in diameter and possessed average grain sizes that varied from 8 to 30 μm. Pellet centerline temperatures were continually measured during the irradiation experiments
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Synthesis and single crystal growth of perovskite semiconductor CsPbBr3
Zhang, Mingzhi; Zheng, Zhiping; Fu, Qiuyun; Chen, Zheng; He, Jianle; Zhang, Sen; Chen, Cheng; Luo, Wei
2018-02-01
As a typical representative of all-inorganic lead halide perovskites, cesium lead bromine (CsPbBr3) has attracted significant attention in recent years. The direct band gap semiconductor CsPbBr3 has a wide band gap of 2.25 eV and high average atomic number (Cs: 55, Pb: 82 and Br: 35), which meet most of the requirements for detection of X- and γ-ray radiation, such as high attenuation, high resistivity, and significant photoconductivity response. However, the growth of large volume CsPbBr3 single crystals remains a challenge. In this paper, the synthesis of CsPbBr3 polycrystalline powders by a chemical co-precipitation method was investigated and the optimum synthesis conditions were obtained. A large CsPbBr3 single crystal of 8 mm diameter and 60 mm length was obtained by a creative electronic dynamic gradient (EDG) method. X-ray diffraction (XRD) patterns and X-ray rocking curve showed that the CsPbBr3 crystal preferentially oriented in the (1 1 0) direction and had a low dislocation density and small residual stress in the crystal. The IR and UV-Vis transmittance and temperature-dependent photoluminescence (PL) spectra showed the crystal had a good basic optical performance. The almost linear current-voltage (I-V) curves implied good ohmic contact between the electrodes and crystal surfaces. The resistivity of the crystal was calculated 109-1010 Ω cm. The above results showed that the quality of the obtained crystal had met the demand of optoelectronic applications.
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Numerical modelling of micro-machining of f.c.c. single crystal: Influence of strain gradients
Demiral, Murat; Roy, Anish; El Sayed, Tamer S.; Silberschmidt, Vadim V.
2014-01-01
of orthogonal micro-machining of f.c.c. single crystal copper was developed. The model was implemented in a commercial software ABAQUS/Explicit employing a user-defined subroutine VUMAT. Strain-gradient crystal-plasticity and conventional crystal
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International Nuclear Information System (INIS)
Pan, L.M.; Ghosh, R.N.; McLean, M.
1993-01-01
A physics based model has been developed that accounts for the principal features of anisotropic creep deformation of single crystal superalloys. The present paper extends this model to simulate other types of high temperature deformation under strain controlled test conditions, such as stress relaxation and tension tests at constant strain rate in single crystals subject to axial loading along an arbitrary crystal direction. The approach is applied to the SRR99 single crystal superalloy where a model parameter database is available, determined via analysis of a database of constant stress creep curves. A software package has been generated to simulate the deformation behaviour under complex stress-strain conditions taking into account anisotropic elasticity. (orig.)
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Jia, Bao-Rui; Qin, Ming-Li; Li, Shu-Mei; Zhang, Zi-Li; Lu, Hui-Feng; Chen, Peng-Qi; Wu, Hao-Yang; Lu, Xin; Zhang, Lin; Qu, Xuan-Hui
2016-06-22
A new class of mesoporous single crystalline (MSC) material, Co(OH)2 nanoplates, is synthesized by a soft template method, and it is topotactically converted to dual-pore MSC Co3O4. Most mesoporous materials derived from the soft template method are reported to be amorphous or polycrystallined; however, in our synthesis, Co(OH)2 seeds grow to form single crystals, with amphiphilic block copolymer F127 colloids as the pore producer. The single-crystalline nature of material can be kept during the conversion from Co(OH)2 to Co3O4, and special dual-pore MSC Co3O4 nanoplates can be obtained. As the anode of lithium-ion batteries, such dual-pore MSC Co3O4 nanoplates possess exceedingly high capacity as well as long cyclic performance (730 mAh g(-1) at 1 A g(-1) after the 350th cycle). The superior performance is because of the unique hierarchical mesoporous structure, which could significantly improve Li(+) diffusion kinetics, and the exposed highly active (111) crystal planes are in favor of the conversion reaction in the charge/discharge cycles.
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Chadwick, F Mark; McKay, Alasdair I; Martinez-Martinez, Antonio J; Rees, Nicholas H; Krämer, Tobias; Macgregor, Stuart A; Weller, Andrew S
2017-08-01
Single-crystal to single-crystal solid/gas reactivity and catalysis starting from the precursor sigma-alkane complex [Rh(Cy 2 PCH 2 CH 2 PCy 2 )(η 2 η 2 -NBA)][BAr F 4 ] (NBA = norbornane; Ar F = 3,5-(CF 3 ) 2 C 6 H 3 ) is reported. By adding ethene, propene and 1-butene to this precursor in solid/gas reactions the resulting alkene complexes [Rh(Cy 2 PCH 2 CH 2 PCy 2 )(alkene) x ][BAr F 4 ] are formed. The ethene ( x = 2) complex, [Rh(Cy 2 PCH 2 CH 2 PCy 2 )(ethene) 2 ][BAr F 4 ]-Oct , has been characterized in the solid-state (single-crystal X-ray diffraction) and by solution and solid-state NMR spectroscopy. Rapid, low temperature recrystallization using solution methods results in a different crystalline modification, [Rh(Cy 2 PCH 2 CH 2 PCy 2 )(ethene) 2 ][BAr F 4 ]-Hex , that has a hexagonal microporous structure ( P 6 3 22). The propene complex ( x = 1) [Rh(Cy 2 PCH 2 CH 2 PCy 2 )(propene)][BAr F 4 ] is characterized as having a π-bound alkene with a supporting γ-agostic Rh···H 3 C interaction at low temperature by single-crystal X-ray diffraction, variable temperature solution and solid-state NMR spectroscopy, as well as periodic density functional theory (DFT) calculations. A fluxional process occurs in both the solid-state and solution that is proposed to proceed via a tautomeric allyl-hydride. Gas/solid catalytic isomerization of d 3 -propene, H 2 C 0000000000000000000000000000000000 0000000000000000000000000000000000 0000000000000000000000000000000000 0000000000000000000000000000000000 0000000000000000000000000000000000 0000000000000000000000000000000000 0000000000000000000000000000000000 0000000000000000000000000000000000 0000000000000000000000000000000000 0000000000000000000000000000000000 0000000000000000000000000000000000 0000000000000000000000000000000000 0000000000000000000000000000000000 0000000000000000000000000000000000 0000000000000000000000000000000000 1111111111111111111111111111111111 1111111111111111111111111111111111
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International Nuclear Information System (INIS)
Witt, A.F.; Becla, P.; Counterman, C.; DiFrancesco, J.; Landahl, G.; Morse, K.; Sanchez, J.
1996-01-01
The ultimate objective of the conducted research is to ascertain the potential of AlSb (in single crystal form) for application as γ-detector material operating at room temperature. To this end approaches to crystal growth were to be developed which permit control of growth parameters affecting critical application specific properties of AlSb. The research was focused on exploration of the effectiveness of the Czochralski method and on the development of methods and procedures leading to AlSb crystals with low free carrier concentration and a high mobility-lifetime product. Conventional melt growth of AlSb by the Czochralski technique (from stoichiometric charges) generally yielded material with high net carrier concentrations and low mobility-lifetime products. Significant improvement in crystal properties was achieved, when operating with non-stoichiometric melts, containing Sb in excess at levels of 3 to 10 mol%, further improvements were obtained when changing ambient argon pressure from atmospheric to 300 psi, and using high purity alumina crucibles which were inductively heated with a graphite susceptor CVD coated with silicon-carbide. Initial efforts to reduce evaporative loss of Sb through application of the LEC technique (liquid encapsulated Czochralski) with conventional encapsulants (B 2 O 3 , LiF, CaF 2 ) failed because of their interaction with the crucible and the AlSb melt. Compensation techniques (based on extrinsic doping) were found to lead to the desired reduction of free carriers in AlSb. Such material, however, exhibits a significant decrease of charge carrier mobility and lifetime. Early termination of this research program prevented optimization of critical materials properties in AlSb and precluded at this time a realistic assessment of the potential of this material for solid state detector applications
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Single mode dye-doped polymer photonic crystal lasers
International Nuclear Information System (INIS)
Christiansen, Mads B; Buß, Thomas; Smith, Cameron L C; Petersen, Sidsel R; Jørgensen, Mette M; Kristensen, Anders
2010-01-01
Dye-doped polymer photonic crystal (PhC) lasers fabricated by combined nanoimprint and photolithography are studied for their reproducibility and stability characteristics. We introduce a phase shift in the PhC lattice that substantially improves the yield of single wavelength emission. Single mode emission and reproducibility of laser characteristics are important if the lasers are to be mass produced in, e.g., optofluidic sensor chips. The fabrication yield is above 85% with highly reproducible wavelengths (within 0.5%), and the temperature dependence on the wavelength is found to be −0.045 or −0.066 nm K -1 , depending on the material
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Ultrafast nonlinear response of silicon carbide to intense THz fields
DEFF Research Database (Denmark)
Tarekegne, Abebe Tilahun; Iwaszczuk, Krzysztof; Kaltenecker, Korbinian J.
2017-01-01
We demonstrate ultrafast nonlinear absorption induced by strong, single-cycle THz fields in bulk, lightly doped 4H silicon carbide. A combination of Zener tunneling and intraband transitions makes the effect as at least as fast as the excitation pulse. The sub-picosecond recovery time makes...
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Synthesis and growth of single crystals of PrCl3
International Nuclear Information System (INIS)
Pei, Jen Shieh.
1984-01-01
An efficient method for growth of high optical quality single crystals of PrCl 3 . The method consists in careful drying of the hydrated chloride, PrCl 3 . 7H 2 O, with a protective atmosphere of anhydrous HCl and Ar. A subsequent growth was done by the zone melting technique. The hydrated chloride had prepared from dissolution of the oxide Pr 6 O 11 in hydrochloric acid. The grown crystals had characterized fluorescence and x-ray diffraction measurements. (Author) [pt
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Method of growing yttrium aluminate and/or lanthanide single crystals with perovskite structure
International Nuclear Information System (INIS)
Kvapil, Jiri; Perner, B.; Kvapil, Josef; Blazek, K.
1989-01-01
Single crystals of yttrium aluminate and/or lanthanide with perovskite structure are grown from melt in a vacuum at a pressure of gas residues of max. 0.01 Pa. The melt contains 1±0.05 gram-ions of aluminium per gram-ion of yttrium and/or lanthanides. The single crystals are then heated in a vacuum (0.01 Pa) at temperatures of 1,450 to 1,800 degC for 2 to 3 hours. (B.S.)
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Creep in single crystals of γ single phase Ni-20Cr alloy and evolution of dynamic recrystallization
International Nuclear Information System (INIS)
Matsuo, T.; Terada, Y.; Takahashi, S.; Ishiwari, Y.
2000-01-01
The creep rate - time and the creep rate - strain curves of the single crystals of γ single phase Ni-20 mass%Cr alloy have been investigated at 1173 K under the wide stress range of 19.6 to 98 MPa, and compared with those of polycrystals. The orientation corresponding to the stress axis of the single crystals were chosen within the standard stereographic triangle. The creep curve in the Ni-20 mass%Cr single crystal consists of a transient stage and an accelerating stage without a steady state stage. The transient stage has two steps. In the first step, the creep rate slightly decreases, and in the second step, the decrease in creep rate becomes prominent with increasing the testing time. With decreasing the stress, the extension of transient stage becomes prominent, and by this extension, the decreasing ratio of the creep rate in transient stage is enlarged. At the lowest stress of 19.6 MPa, the most prominent extension of transient stage and the more than two order decrease in creep rate in transient stage are detected. The creep interrupting tests have been conducted at the stress of 29.4 MPa in the strain range of 0.1 to 0.6 to examine the appearance of dynamically recrystallized grains. At the strain of 0.1 corresponding to the end of the first step in transient stage, a straight subboundary parallel to slip plane appears in a wide distance of a few hundreds micrometers. With increasing the strain, the straight subboundary turns to waved one. At the strain showing the minimum creep rate, a lot of evolved subgrains appear. At the strain corresponding to the early stage of accelerating creep, dynamically recrystallized grains appear. It is confirmed that the onset of accelerating creep well corresponds to the appearance of dynamically recrystallized grains. In the single crystal creep ruptured, the whole gage portion turns to polycrystal with equiaxed grains having a diameter of 150 μm. (orig.)
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Advances in Single-Crystal Fibers and Thin Rods Grown by Laser Heated Pedestal Growth
Directory of Open Access Journals (Sweden)
Gisele Maxwell
2017-01-01
Full Text Available Single-crystal fibers are an intermediate between laser crystals and doped glass fibers. They have the advantages of both guiding laser light and matching the efficiencies found in bulk crystals, which is making them ideal candidates for high-power laser and fiber laser applications. This work focuses on the growth of a flexible fiber with a core of dopant (Er, Nd, Yb, etc. and a polycrystalline clad of yttrium aluminum garnet (YAG that will exhibit good wave guiding properties. Direct growth or a combination of growth and cladding experiments are described. Scattering loss measurements at visible wavelengths, along with dopant profile characterization with damage threshold results, are also presented. For single-pass amplification, a single-pass linear gain of 7.4 was obtained for 29 nJ pulses of 5 ns duration at 1 MHz repetition rate. We also obtained a laser efficiency of over 58% in a diode-pumped configuration. These results confirm the potential for single-crystal fibers to overcome the limitations of the glass fibers commonly used in fiber lasers, making them prime candidates for high-power compact fiber lasers and amplifiers.
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Optical properties of Ni-doped MgGa2O4 single crystals grown by floating zone method
International Nuclear Information System (INIS)
Suzuki, Takenobu; Hughes, Mark; Ohishi, Yasutake
2010-01-01
The single crystal growth conditions and spectroscopic characterization of Ni-doped MgGa 2 O 4 with inverse-spinel structure crystal family are described. Single crystals of this material have been grown by floating zone method. Ni-doped MgGa 2 O 4 single crystals have broadband fluorescence in the 1100-1600 nm wavelength range, 1.6 ms room temperature lifetime, 56% quantum efficiency and 1.05x10 -21 cm 2 stimulated emission cross section at the emission peak. This new material is very promising for tunable laser applications covering the important optical communication and eye safe wavelength region.
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Cu-Al-Ni Shape Memory Single Crystal Wires with High Transformation Temperature
Hautcoeur, Alain; Fouché, Florian; Sicre, Jacques
2016-01-01
CN-250X is a new material with higher performance than Nickel-Titanium Shape Memory Alloy (SMA). For space mechanisms, the main disadvantage of Nickel-Titanium Shape Memory Alloy is the limited transformation temperature. The new CN-250X Nimesis alloy is a Cu-Al-Ni single crystal wire available in large quantity because of a new industrial process. The triggering of actuators made with this Cu-Al-Ni single crystal wire can range from ambient temperature to 200 C in cycling and even to 250 C in one-shot mode. Another advantage of CN-250X is a better shape recovery (8 to 10%) than Ni-Ti (6 to 7%). Nimesis is the first company able to produce this type of material with its new special industrial process. A characterization study is presented in this work, including the two main solicitation modes for this material: tensile and torsion. Different tests measure the shape recovery of Cu-Al-Ni single crystals wires during heating from room temperature to a temperature higher than temperature of end of martensitic transformation.
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Giant anisotropy of magnetocaloric effect in TbMnO3 single crystals
Jin, Jin-Ling; Zhang, Xiang-Qun; Li, Guo-Ke; Cheng, Zhao-Hua; Zheng, Lin; Lu, Yi
2011-05-01
The magnetocaloric effect (MCE) in TbMnO3 single crystals was investigated by isothermal magnetization curves for the ab plane at low temperatures. Large magnetic entropy change, ΔSM = -18.0 J/kg K, and the refrigerant capacity, RC = 390.7 J/kg, are achieved near the ordering temperature of Tb3+ moment (TNTb) under 70 kOe along the a axis. Furthermore, the TbMnO3 single crystal exhibits a giant MCE anisotropy. The difference of ΔSMand RC between the a and b axes is field and temperature dependent, which reaches maximum values of 11.4 J/kg K and 304.1 J/kg, respectively. By taking magnetocrystalline anisotropy into account, the rotating ΔSMwithin the ab plane can be well simulated, indicating that the anisotropy of ΔSMis directly contributed from the magnetocrystalline anisotropy. Our finding for giant MCE anisotropy in TbMnO3 single crystals explores the possibility of using this material for magnetic refrigerators by rotating its magnetization vector rather than moving it in and out of the magnet.
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Energy Technology Data Exchange (ETDEWEB)
Balakrishnan, T., E-mail: balacrystalgrowth@gmail.com [Crystal Growth Laboratory, PG & Research Department of Physics, Periyar EVR College (Autonomous), Tiruchirappalli, 620 023, Tamil Nadu (India); Sathiskumar, S. [Crystal Growth Laboratory, PG & Research Department of Physics, Periyar EVR College (Autonomous), Tiruchirappalli, 620 023, Tamil Nadu (India); Ramamurthi, K. [Crystal Growth and Thin Film Laboratory, Department of Physics and Nanotechnology, SRM University, Kattankulathur, 603 203, Kancheepuram, Tamil Nadu (India); Thamotharan, S. [Department of Bioinformatics, School of Chemical and Biotechnology, SASTRA University, Thanjavur, 613 401 (India)
2017-01-15
Single crystal of a novel metal organic nonlinear optical (NLO) cadmium (II) dibromide L - proline monohydrate (CBLPM) of size 7 × 7 × 5 mm{sup 3} was grown from slow evaporation technique. Single crystal X – ray diffraction analysis reveals that the crystal belongs to orthorhombic system with lattice parameters a = 10.1891 (8) Å, b = 13.4961 (11) Å, c = 7.4491 (5) Å and space group P2{sub 1}2{sub 1}2{sub 1}. The powder X – ray diffraction pattern of CBLPM was recorded and the X – ray diffraction peaks were indexed. The various functional groups of CBLPM were identified by the FT – IR and FT – Raman spectral analyses. The optical transmittance window and lower cut off wavelength of CBLPM were identified from UV – Vis – NIR studies. The mechanical strength of the grown crystal was estimated using Vickers microhardness test. Dielectric constant and dielectric loss measurements were carried out at different temperatures in the frequency range of 50 Hz - 2 MHz. The photoluminescence spectrum was recorded in the wavelength range 200–400 nm and the estimated optical band gap was ∼4.1 eV. Etching studies were carried out for different etching time. Thermal stability of CBLPM was determined using thermogravimetric analysis. Laser induced damage threshold study was carried out for the grown crystal using Nd:YAG laser. Size dependent second harmonic generation efficiency of the grown crystal was determined by Kurtz and Perry powder technique with different particle size using Nd:YAG laser with wavelength 1064 nm. Second harmonic generation efficiency of the powdered CBLPM crystal was ∼2.3 times that of potassium dihydrogen orthophosphate. - Highlights: • CBLPM crystal belongs to orthorhombic crystal system with space group P2{sub 1}2{sub 1}2{sub 1.} • Transmittance of CBLPM is ∼80% in the 650–1100 nm range. • Powder SHG efficiency of CBLPM increases with increase in particle size. • SHG efficiency of 0.57 μm size powdered CBLPM is ∼2
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Pyroelectric properties of phosphoric acid-doped TGS single crystals
International Nuclear Information System (INIS)
Saxena, Aparna; Fahim, M; Gupta, Vinay; Sreenivas, K
2003-01-01
Pyroelectric properties of phosphoric acid (H 3 PO 4 )-doped triglycine sulfate (TGSP) single crystals grown from solutions containing 0.1-0.5 mol of H 3 PO 4 have been studied. Incorporation of H 3 PO 4 into the crystal lattice is found to induce an internal bias field (E b ) and is observed through the presence of a sustained polarization and pyroelectricity beyond the transition temperature. The internal bias field has been estimated theoretically by fitting the experimentally measured data on temperature dependence of the pyroelectric coefficient (λ), dielectric constant (ε') and polarization (P). A high E b value in the range 9 x 10 3 -15.5 x 10 4 V m -1 is obtained for crystals grown with 0.1-0.5 mol of H 3 PO 4 in the solution, and a specific concentration of 0.2-0.25 mol of H 3 PO 4 in the solution during crystal growth is found to be optimum for a high figure of merit for detectivity, F d = 428 μC m -2 K -1
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Thickness-dependent photovoltaic effects in miscut Nb-doped SrTiO3 single crystals
International Nuclear Information System (INIS)
Yue Zengji; Zhao Kun; Zhao Songqing; Lu Zhiqing; Li Xiaoming; Ni Hao; Wang Aijun
2010-01-01
The photovoltaic effects of Nb-doped SrTiO 3 single crystals with different thicknesses were investigated under the illumination of ultraviolet pulsed lasers. The peak photovoltage increased and then decreased quickly with the decrease in crystal thickness, and a maximum photovoltage occurred for the 180 μm-thick crystal. The photovoltaic response time decreased monotonically with decreasing crystal thickness. The present results suggested the promising potential of reducing crystal thickness in high sensitivity detectors with fast response.