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Sample records for capacitance deep level

  1. A transient simulation approach to obtaining capacitance-voltage characteristics of GaN MOS capacitors with deep-level traps

    Science.gov (United States)

    Fukuda, Koichi; Asai, Hidehiro; Hattori, Junichi; Shimizu, Mitsuaki; Hashizume, Tamotsu

    2018-04-01

    In this study, GaN MOS capacitance-voltage device simulations considering various interface and bulk traps are performed in the transient mode. The simulations explain various features of capacitance-voltage curves, such as plateau, hysteresis, and frequency dispersions, which are commonly observed in measurements of GaN MOS capacitors and arise from complicated combinations of interface and bulk deep-level traps. The objective of the present study is to provide a good theoretical tool to understand the physics of various nonideal measured curves.

  2. Automated capacitive spectrometer for measuring the parameters of deep centers in semiconductor materials

    International Nuclear Information System (INIS)

    Shajmeev, S.S.

    1985-01-01

    An automated capacitive spectrometer for determining deep centers parameters in semiconductor materials and instruments is described. The facility can be used in studying electrically active defects (impurity, radiation, thermal) having deep levels in the forbidden semiconductor zone. The facility permits to determine the following parameters of the deep centers: concentration of each deep level taken separately within 5x10 -1 +-5x10 -15 of the alloying impurity concentration, level energy position in the forbidden semiconductor zone in the range from 0.08 MeV above the valency zone ceiling to 0.08 eV below the conductivity zone bottom, hole or electron capture cross-section on the deep center; concentration profile of deep levels

  3. Capacitance transient study of a bistable deep level in e--irradiated n-type 4H-SiC

    International Nuclear Information System (INIS)

    Beyer, F C; Hemmingsson, C G; Pedersen, H; Henry, A; Janzén, E; Isoya, J; Ohshima, T; Morishita, N

    2012-01-01

    Using capacitance transient techniques, a bistable centre, called FB centre here, was observed in electron irradiated 4H-SiC. In configuration A, the deep level known as EH5 (E a = E C - 1.07 eV) is detected in the deep level transient spectroscopy spectrum, whereas for configuration B no obvious deep level is observed in the accessible part of the band gap. Isochronal annealing revealed the transition temperatures to be T A→B > 730 K and for the opposite process T B→A ≈ 710 K. The energy needed to conduct the transformations were determined to be E A (A → B) = (2.1 ± 0.1) eV and E A (B → A) = (2.3 ± 0.1) eV, respectively. The pre-factor indicated an atomic jump process for the opposite transition A → B and a charge carrier-emission dominated process in the case of B → A. Minority charge carrier injection enhanced the transformation from configuration B to configuration A by lowering the transition barrier by about 1.4 eV. Since the bistable FB centre is already present after low-energy electron irradiation (200 keV), it is likely related to carbon.

  4. A novel capacitive micro-accelerometer with grid strip capacitances and sensing gap alterable capacitances

    International Nuclear Information System (INIS)

    Dong Linxi; Chen Jindan; Huo Weihong; Li Yongjie; Sun Lingling; Yan Haixia

    2009-01-01

    The comb capacitances fabricated by deep reactive ion etching (RIE) process have high aspect ratio which is usually smaller than 30: 1 for the complicated process factors, and the combs are usually not parallel due to the well-known micro-loading effect and other process factors, which restricts the increase of the seismic mass by increasing the thickness of comb to reduce the thermal mechanical noise and the decrease of the gap of the comb capacitances for increasing the sensitive capacitance to reduce the electrical noise. Aiming at the disadvantage of the deep RIE, a novel capacitive micro-accelerometer with grid strip capacitances and sensing gap alterable capacitances is developed. One part of sensing of inertial signal of the micro-accelerometer is by the grid strip capacitances whose overlapping area is variable and which do not have the non-parallel plate's effect caused by the deep RIE process. Another part is by the sensing gap alterable capacitances whose gap between combs can be reduced by the actuators. The designed initial gap of the alterable comb capacitances is relatively large to depress the effect of the maximum aspect ratio (30 : 1) of deep RIE process. The initial gap of the capacitance of the actuator is smaller than the one of the comb capacitances. The difference between the two gaps is the initial gap of the sensitive capacitor. The designed structure depresses greatly the requirement of deep RIE process. The effects of non-parallel combs on the accelerometer are also analyzed. The characteristics of the micro-accelerometer are discussed by field emission microscopy (FEM) tool ANSYS. The tested devices based on slide-film damping effect are fabricated, and the tested quality factor is 514, which shows that grid strip capacitance design can partly improve the resolution and also prove the feasibility of the designed silicon-glass anodically bonding process.

  5. A new interface weak-capacitance detection ASIC of capacitive liquid level sensor in the rocket

    Science.gov (United States)

    Yin, Liang; Qin, Yao; Liu, Xiao-Wei

    2017-11-01

    A new capacitive liquid level sensing interface weak-capacitance detection ASIC has been designed. This ASIC realized the detection of the output capacitance of the capacitive liquid level sensor, which converts the output capacitance of the capacitive liquid level sensor to voltage. The chip is fabricated in a standard 0.5μm CMOS process. The test results show that the linearity of capacitance detection of the ASIC is 0.05%, output noise is 3.7aF/Hz (when the capacitance which will be detected is 40 pF), the stability of capacitance detection is 7.4 × 10-5pF (1σ, 1h), the output zero position temperature coefficient is 4.5 uV/∘C. The test results prove that this interface ASIC can meet the requirement of high accuracy capacitance detection. Therefore, this interface ASIC can be applied in capacitive liquid level sensing and capacitive humidity sensing field.

  6. Studies on deep electronic levels in silicon and aluminium gallium arsenide alloys

    International Nuclear Information System (INIS)

    Pettersson, H.

    1993-01-01

    This thesis reports on investigations of the electrical and optical properties of deep impurity centers, related to the transition metals (TMs) Ti, Mo, W, V and Ni, in silicon. Emission rates, capture cross sections and photoionization cross sections for these impurities were determined by means of various Junction Space Charge Techniques (JSCTs), such as Deep Level Transient Spectroscopy (DLTS), dark capacitance transient and photo capacitance transient techniques. Changes in Gibbs free energy as a function of temperature were calculated for all levels. From this temperature dependence, the changes in enthalpy and entropy involved in the electron and hole transitions were deduced. The influence of high electric fields on the electronic levels in chalcogen-doped silicon were investigated using the dark capacitance transient technique. The enhancement of the electron emission from the deep centers indicated a more complex field enhancement model than the expected Poole-Frenkel effect for coulombic potentials. The possibility to determine charge states of defects using the Poole-Frenkel effect, as often suggested, is therefore questioned. The observation of a persistent decrease of the dark conductivity due to illumination in simplified AlGaAs/GaAs high Electron Mobility Transistors (HEMTs) over the temperature range 170K< T<300K is reported. A model for this peculiar behavior, based on the recombination of electrons in the two-dimensional electron gas (2DEG) located at the AlGaAs/GaAs interface with holes generated by a two-step excitation process via the deep EL2 center in the GaAs epilayer, is put forward

  7. Capacitance level probe, Type FSK 88

    International Nuclear Information System (INIS)

    Vogt, W.

    2001-01-01

    The aim of the capacitive level probe, Type FSK 88, is to supervise the level within vessels continuously and to signalize alterations immediately. Since 1987 the level probe is installed in the pool for burn up fuel elements and in the reactor containment sump of BWRs, PWRs and WWERs. The capacitive level probe of type FSK 88 was qualified for Loss of Coolant Accidents and seismic events according to international rules. The measuring principle takes credit from the fact that the dielectric with different dielectric constants in a condensator changes the capacity of the condensator. (Authors)

  8. Characterization of majority and minority carrier deep levels in p-type GaN:Mg grown by molecular beam epitaxy using deep level optical spectroscopy

    International Nuclear Information System (INIS)

    Armstrong, A.; Caudill, J.; Ringel, S. A.; Corrion, A.; Poblenz, C.; Mishra, U. K.; Speck, J. S.

    2008-01-01

    Deep level defects in p-type GaN:Mg grown by molecular beam epitaxy were characterized using steady-state photocapacitance and deep level optical spectroscopy (DLOS). Low frequency capacitance measurements were used to alleviate dispersion effects stemming from the deep Mg acceptor. Use of DLOS enabled a quantitative survey of both deep acceptor and deep donor levels, the latter being particularly important due to the limited understanding of minority carrier states for p-type GaN. Simultaneous electron and hole photoemissions resulted in a convoluted deep level spectrum that was decoupled by emphasizing either majority or minority carrier optical emission through control of the thermal filling time conditions. In this manner, DLOS was able to resolve and quantify the properties of deep levels residing near both the conduction and valence bandedges in the same sample. Bandgap states through hole photoemission were observed at E v +3.05 eV, E v +3.22 eV and E v +3.26 eV. Additionally, DLOS revealed levels at E c -3.24 eV and E c -2.97 eV through electron emission to the conduction band with the former attributed to the Mg acceptor itself. The detected deep donor concentration is less than 2% of activated [Mg] and demonstrates the excellent quality of the film

  9. Studies of deep levels in He+-irradiated silicon

    International Nuclear Information System (INIS)

    Schmidt, D.C.; Barbot, J.F.; Blanchard, C.

    1997-01-01

    Deep levels created in n-epitaxial silicon by alpha particle irradiation in the dose range from 10 9 to 10 13 particles/cm 2 have been investigated by the deep level transient spectroscopy technique and capacitance-voltage profiling. Under low fluence irradiation at least four main electron traps have been observed. With further increase in irradiation fluence, two new levels located at E c -0.56 eV and E c -0.64 eV appear on the high-temperature side of the DLTS signal. The slope change observed in the amplitude variations of the singly negative charge state of the divacancy versus the dose takes place when these two new levels appear. This suggests that both are multivacancy-related defects. After annealing at 350 C for 15 min, all electron traps have disappeared. Moreover, no shallow levels are created during the annealing. (orig.)

  10. Impact of proton irradiation on deep level states in n-GaN

    International Nuclear Information System (INIS)

    Zhang, Z.; Arehart, A. R.; Cinkilic, E.; Ringel, S. A.; Chen, J.; Zhang, E. X.; Fleetwood, D. M.; Schrimpf, R. D.; McSkimming, B.; Speck, J. S.

    2013-01-01

    Deep levels in 1.8 MeV proton irradiated n-type GaN were systematically characterized using deep level transient spectroscopies and deep level optical spectroscopies. The impacts of proton irradiation on the introduction and evolution of those deep states were revealed as a function of proton fluences up to 1.1 × 10 13 cm −2 . The proton irradiation introduced two traps with activation energies of E C - 0.13 eV and 0.16 eV, and a monotonic increase in the concentration for most of the pre-existing traps, though the increase rates were different for each trap, suggesting different physical sources and/or configurations for these states. Through lighted capacitance voltage measurements, the deep levels at E C - 1.25 eV, 2.50 eV, and 3.25 eV were identified as being the source of systematic carrier removal in proton-damaged n-GaN as a function of proton fluence

  11. Constant-resistance deep-level transient spectroscopy in Si and Ge JFET's

    International Nuclear Information System (INIS)

    Kolev, P.V.; Deen, J.

    1999-01-01

    The recently introduced constant-resistance deep-level transient spectroscopy (CR-DLTS) was successfully applied to study virgin and radiation-damaged junction field-effect transistors (JFET's). The authors have studied three groups of devices: commercially available-discrete silicon JFET's; virgin and exposed to high-level neutron radiation silicon JFET's, custom-made by using a monolithic technology; and commercially available discrete germanium p-channel JFET's. CR-DLTS is similar to both the conductance DLTs and to the constant-capacitance variation (CC-DLTS). Unlike the conductance and current DLTS, it is independent of the transistor size and does not require simultaneous measurement of the transconductance or the free-carrier mobility for calculation of the trap concentration. Compared to the CC-DLTS, it measures only the traps inside the gate-controlled part of the space charge region. Comparisons have also been made with the CC-DLTS and standard capacitance DLTS. In addition, possibilities for defect profiling in the channel have been demonstrated. CR-DLTS was found to be a simple, very sensitive, and device area-independent technique which is well suited for measurement of a wide range of deep level concentrations in transistors

  12. Admittance spectroscopy or deep level transient spectroscopy: A contrasting juxtaposition

    Science.gov (United States)

    Bollmann, Joachim; Venter, Andre

    2018-04-01

    A comprehensive understanding of defects in semiconductors remains of primary importance. In this paper the effectiveness of two of the most commonly used semiconductor defect spectroscopy techniques, viz. deep level transient spectroscopy (DLTS) and admittance spectroscopy (AS) are reviewed. The analysis of defects present in commercially available SiC diodes shows that admittance spectroscopy allows the identification of deep traps with reduced measurement effort compared to deep Level Transient Spectroscopy (DLTS). Besides the N-donor, well-studied intrinsic defects were detected in these diodes. Determination of their activation energy and defect density, using the two techniques, confirm that the sensitivity of AS is comparable to that of DLTS while, due to its well defined peak shape, the spectroscopic resolution is superior. Additionally, admittance spectroscopy can analyze faster emission processes which make the study of shallow defects more practical and even that of shallow dopant levels, possible. A comparative summary for the relevant spectroscopic features of the two capacitance methods are presented.

  13. New Type Multielectrode Capacitance Sensor for Liquid Level

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Y R [China University of Petroleum (Huadong), Qingdao (China); Shi, A P [Shandong University of Science and Technology, Qingdao (China); Chen, G Q [Shandong University of Science and Technology, Qingdao (China); Chang, Y Y [Shandong University of Science and Technology, Qingdao (China); Hang, Z [Shandong University of Science and Technology, Qingdao (China); Liu, B M [Binzhou University, Binzhou (China)

    2006-10-15

    This paper introduces the design of a new type multielectrode capacitance sensor for liquid level. The system regards electric field sensor MC33794 as the core and applies microcontroller MC9S12DJ128 to realize intelligent liquid level monitoring system, which overcomes the disadvantages of the traditional capacitance sensor, improves on the anti-jamming ability and the measurement precision and simplifies the system structure. Finally, the paper sums up the design of the system.

  14. Deep-depletion physics-based analytical model for scanning capacitance microscopy carrier profile extraction

    International Nuclear Information System (INIS)

    Wong, K. M.; Chim, W. K.

    2007-01-01

    An approach for fast and accurate carrier profiling using deep-depletion analytical modeling of scanning capacitance microscopy (SCM) measurements is shown for an ultrashallow p-n junction with a junction depth of less than 30 nm and a profile steepness of about 3 nm per decade change in carrier concentration. In addition, the analytical model is also used to extract the SCM dopant profiles of three other p-n junction samples with different junction depths and profile steepnesses. The deep-depletion effect arises from rapid changes in the bias applied between the sample and probe tip during SCM measurements. The extracted carrier profile from the model agrees reasonably well with the more accurate carrier profile from inverse modeling and the dopant profile from secondary ion mass spectroscopy measurements

  15. Deep levels induced by low energy B+ implantation into Ge-preamorphised silicon in correlation with end of range formation

    International Nuclear Information System (INIS)

    Benzohra, Mohamed; Olivie, Francois; Idrissi-Benzohra, Malika; Ketata, Kaouther; Ketata, Mohamed

    2002-01-01

    It is well established that low energy B + ion implantation into Ge- (or Si) implantation pre-amorphised silicon allows ultra-shallow p + n junctions formation. However, this process is known to generate defects such as dislocation loops, vacancies and interstitials which can act as vehicles to different mechanisms inducing electrically active levels into the silicon bulk. The junctions studied have been obtained using 3 keV/10 15 cm -2 B + implantation into Ge-implantation pre-amorphised substrates and into a reference crystalline substrate. Accurate measurements using deep level transient spectroscopy (DLTS) and isothermal transient capacitance ΔC(t,T) were performed to characterise these levels. Such knowledge is crucial to improve the device characteristics. In order to sweep the silicon band gap, various experimental conditions were considered. The analysis of DLTS spectra have first showed three deep levels associated to secondary induced defects. Their concentration profiles were derived from isothermal transient capacitance at depths up to 3.5 μm into the silicon bulk and allowed us to detect a new deep level. The evolution of such defect distribution in correlation with the technological steps is discussed. The end of range (EOR) defect influence on electrical activity of secondary induced defects in ultra-shallow p + n diodes is clearly demonstrated

  16. Characterization of defects in hydrogenated amorphous silicon deposited on different substrates by capacitance techniques

    International Nuclear Information System (INIS)

    Darwich, R.; Roca i Cabarrocas, P.

    2011-01-01

    Hydrogenated amorphous silicon (a-Si:H) thin films deposited on crystalline silicon and Corning glass substrate were analyzed using different capacitance techniques. The distribution of localized states and some electronic properties were studied using the temperature, frequency and bias dependence of the Schottky barrier capacitance and deep level transient spectroscopy. Our results show that the distribution of the gap states depends on the type of substrate. We have found that the films deposited on c-Si substrate represent only one positively charged or prerelaxed neutral deep state and one interface state, while the films deposited on glass substrate have one interface state and three types of deep defect states, positively or prerelaxed neutral, neutral and negatively charged.

  17. A capacitive level shifter for high voltage (2.5kV)

    DEFF Research Database (Denmark)

    Andersen, Thomas; Andersen, Michael A. E.; Thomsen, Ole Cornelius

    2012-01-01

    with focus on low power consumption as well as low capacitive load between the floating half-bridge node and ground (output capacitance). The operation of the level-shifter is tested and verified by measurements on a prototype half-bridge gate driver. Results conclude stabile operation at 2.44kV, 50k...

  18. Development of capacitive sensor for automatically measuring tumbler water level with FEA simulation.

    Science.gov (United States)

    Wei, Qun; Kim, Mi-Jung; Lee, Jong-Ha

    2018-01-01

    Drinking water has several advantages that have already been established, such as improving blood circulation, reducing acid in the stomach, etc. However, due to people not noticing the amount of water they consume every time they drink, most people drink less water than the recommended daily allowance. In this paper, a capacitive sensor for developing an automatic tumbler to measure water level is proposed. Different than in previous studies, the proposed capacitive sensor was separated into two sets: the main sensor for measuring the water level in the tumbler, and the reference sensor for measuring the incremental level unit. In order to confirm the feasibility of the proposed idea, and to optimize the shape of the sensor, a 3D model of the capacitive sensor with the tumbler was designed and subjected to Finite Element Analysis (FEA) simulation. According to the simulation results, the electrodes were made of copper and assembled in a tumbler manufactured by a 3D printer. The tumbler was filled with water and was subjected to experiments in order to assess the sensor's performance. The comparison of experimental results to the simulation results shows that the measured capacitance value of the capacitive sensor changed linearly as the water level varied. This proves that the proposed sensor can accurately measure the water level in the tumbler. Additionally, by use of the curve fitting method, a compensation algorithm was found to match the actual level with the measured level. The experimental results proved that the proposed capacitive sensor is able to measure the actual water level in the tumbler accurately. A digital control part with micro-processor will be designed and fixed on the bottom of the tumbler for developing a smart tumbler.

  19. Effect of deep dislocation levels in silicon on the properties of p-n junctions

    Energy Technology Data Exchange (ETDEWEB)

    Zakharov, A.G.; Dudko, V.G.; Nabokov, G.M.; Sechenov, D.A.

    1988-07-01

    We present the results of studies on the influence of deep levels, due to dislocations in electronic-grade silicon, on the lifetime of minority carriers and on the current-voltage and capacitance-voltage characteristics of p-n junctions. The parameters of the deep levels were determined by means of dynamic spectroscopy. The carrier lifetime in the high-resistance region of the p-n junction correlates well with the dislocation density and varies from 10/sup /minus/7/ sec to 3 /centered dot/10/sup /minus/6/ sec when the dislocation density N/sub d/ varies from 10/sup 7/ cm/sup /minus/2/ to 5 /centered dot/10/sup 3/ cm/sup /minus/2/. The voltage across the p-n junction at a high level of injection varies 1.6 to 6.2 v as a function of N/sub d/. The ionization energy of deep levels associated with dislocation in silicon is 0.44 and 0.57 eV, measured from the bottom of the conduction band.

  20. Growth temperature dependence of Si doping efficiency and compensating deep level defect incorporation in Al0.7Ga0.3N

    International Nuclear Information System (INIS)

    Armstrong, Andrew M.; Moseley, Michael W.; Allerman, Andrew A.; Crawford, Mary H.; Wierer, Jonathan J.

    2015-01-01

    The growth temperature dependence of Si doping efficiency and deep level defect formation was investigated for n-type Al 0.7 Ga 0.3 N. It was observed that dopant compensation was greatly reduced with reduced growth temperature. Deep level optical spectroscopy and lighted capacitance-voltage were used to understand the role of acceptor-like deep level defects on doping efficiency. Deep level defects were observed at 2.34 eV, 3.56 eV, and 4.74 eV below the conduction band minimum. The latter two deep levels were identified as the major compensators because the reduction in their concentrations at reduced growth temperature correlated closely with the concomitant increase in free electron concentration. Possible mechanisms for the strong growth temperature dependence of deep level formation are considered, including thermodynamically driven compensating defect formation that can arise for a semiconductor with very large band gap energy, such as Al 0.7 Ga 0.3 N

  1. The role of deep level traps in barrier height of 4H-SiC Schottky diode

    Energy Technology Data Exchange (ETDEWEB)

    Zaremba, G., E-mail: gzaremba@ite.waw.pl [Institute of Electron Technology, Al. Lotnikow 32/46, 02-668 Warsaw (Poland); Adamus, Z. [Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw (Poland); Jung, W.; Kaminska, E.; Borysiewicz, M.A.; Korwin-Mikke, K. [Institute of Electron Technology, Al. Lotnikow 32/46, 02-668 Warsaw (Poland)

    2012-09-01

    This paper presents a discussion about the influence of deep level defects on the height of Ni-Si based Schottky barriers to 4H-SiC. The defects were characterized by deep level transient spectroscopy (DLTS) in a wide range of temperatures (78-750 K). The numerical simulation of barrier height value as a function of dominant defect concentration was carried out to estimate concentration, necessary to 'pin' Fermi level and thus significantly influence the barrier height. From comparison of the results of simulation with barrier height values obtained by capacitance-voltage (C-V) measurements it seems that dominant defect in measured concentration has a very small impact on the barrier height and on the increase of reverse current.

  2. Design, Development and Testing of a Semi Cylindrical Capacitive Sensor for Liquid Level Measurement

    Directory of Open Access Journals (Sweden)

    Sagarika PAL

    2010-05-01

    Full Text Available In the present paper a low cost noncontact semi cylindrical capacitive type liquid level sensor has been designed, developed and tested. The semi cylindrical capacitive sensor consisting of two thin semi cylindrical metal plates separated by a gap distance and mounted around a non conducting storage tank, has been used to measure the liquid level in the tank. The measured capacitance variation with variation of liquid level is linear and obtained in the nano farad range which again has been converted into voltage variation by using proper signal conditioning circuit. Since the sensor is noncontact type it can be used for both conducting and non conducting type of liquid contained within a non conducting tank. For converting the capacitance variation in to voltage variation a series R-L-C resonating circuit has been used instead of conventional bridge circuit. Experimental results confirm the satisfactory performance of the sensor for liquid level measurement.

  3. Tutorial: Junction spectroscopy techniques and deep-level defects in semiconductors

    Science.gov (United States)

    Peaker, A. R.; Markevich, V. P.; Coutinho, J.

    2018-04-01

    The term junction spectroscopy embraces a wide range of techniques used to explore the properties of semiconductor materials and semiconductor devices. In this tutorial review, we describe the most widely used junction spectroscopy approaches for characterizing deep-level defects in semiconductors and present some of the early work on which the principles of today's methodology are based. We outline ab-initio calculations of defect properties and give examples of how density functional theory in conjunction with formation energy and marker methods can be used to guide the interpretation of experimental results. We review recombination, generation, and trapping of charge carriers associated with defects. We consider thermally driven emission and capture and describe the techniques of Deep Level Transient Spectroscopy (DLTS), high resolution Laplace DLTS, admittance spectroscopy, and scanning DLTS. For the study of minority carrier related processes and wide gap materials, we consider Minority Carrier Transient Spectroscopy (MCTS), Optical DLTS, and deep level optical transient spectroscopy together with some of their many variants. Capacitance, current, and conductance measurements enable carrier exchange processes associated with the defects to be detected. We explain how these methods are used in order to understand the behaviour of point defects and the determination of charge states and negative-U (Hubbard correlation energy) behaviour. We provide, or reference, examples from a wide range of materials including Si, SiGe, GaAs, GaP, GaN, InGaN, InAlN, and ZnO.

  4. Positron deep level transient spectroscopy — a new application of positron annihilation to semiconductor physics

    Science.gov (United States)

    Beling, C. D.; Fung, S.; Au, H. L.; Ling, C. C.; Reddy, C. V.; Deng, A. H.; Panda, B. K.

    1997-05-01

    Recent positron mobility and lifetime measurements made on ac-biased metal on semi-insulating GaAs junctions, which have identified the native EL2 defect through a determination of the characteristic ionization energy of the donor level, are reviewed. It is shown that these measurements point towards a new spectroscopy, tentatively named positron-DLTS (deep level transient spectroscopy), that is the direct complement to conventional DLTS in that it monitors transients in the electric field of the depletion region rather than the inversely related depletion width, as deep levels undergo ionization. In this new spectroscopy, which may be applied to doped material by use of a suitable positron beam, electric field transients are monitored through the Doppler shift of the annihilation radiation resulting from the drift velocity of the positron in the depletion region. Two useful extensions of the new spectroscopy beyond conventional capacitance-DLTS are suggested. The first is that in some instances information on the microstructure of the defect causing the deep level may be inferred from the sensitivity of the positron to vacancy defects of negative and neutral charge states. The second is that the positron annihilation technique is intrinsically much faster than conventional DLTS with the capability of observing transients some 10 6 times faster, thus allowing deep levels (and even shallow levels) to be investigated without problems associated with carrier freeze-out.

  5. Variations in creatine kinase activity and reactive oxygen species levels are involved in capacitation of bovine spermatozoa.

    Science.gov (United States)

    Córdoba, M; Pintos, L; Beconi, M T

    2008-12-01

    The generation of reactive oxygen species (ROS) is associated with some factors such as oxidative substrate sources, mitochondrial function and NAD(P)H oxidase activity. In bovine spermatozoa, heparin capacitation produces a respiratory burst sensitive to diphenyleneiodonium (DPI). Creatine kinase (CK) is related to extramitochondrial ATP disponibility. Our purpose was to determine the variation in ROS level and its relation with NAD(P)H oxidase sensitive to DPI and CK participation, as factors involved in redox state and energy generation in capacitation. The chlortetracycline technique was used to evaluate capacitation. CK activity and ROS level were measured by spectrophotometry and spectrofluorometry respectively. The capacitation percentage was increased by heparin or quercetin treatment (P level as control (238.62 +/- 23.47 arbitrary units per 10(8) spermatozoa) (P > 0.05). CK activity decreased by 50% with heparin or quercetin (P level variations were observed in heparin- or quercetin-treated samples (P bovine spermatozoa, capacitation requires equilibrium between oxidative damage susceptibility and ROS levels. CK activity is associated with redox state variation and energy sources. In conclusion, capacitation induction depends on NADPH oxidase and the shuttle creatine-creatine phosphate, both sensitive to DPI.

  6. DLTS and capacitance transients study of defects induced by neutron irradiation in MOS structures CCD process

    International Nuclear Information System (INIS)

    Ahaitouf, A.; Losson, E.; Charles, J.P.

    1999-01-01

    The aim of this paper is to study neutron irradiation effects on PMOS capacitors and NMOSFETs transistors. The characterization of induced defects was made by capacitance transients C(t) measurements, DLTS spectroscopy, and optical DLTS (ODLTS). DLTS spectra present three peaks due to deep levels created in the semiconductor and two peaks due to minority carrier generation. Two levels are reported in the literature. Two other minority carrier traps have been observed on ODLTS spectra after irradiation. This can explain the decrease of the minority carrier generation lifetime observed by capacitance transients measurements. (authors)

  7. MOS Capacitance—Voltage Characteristics III. Trapping Capacitance from 2-Charge-State Impurities

    International Nuclear Information System (INIS)

    Jie Binbin; Sah Chihtang

    2011-01-01

    Low-frequency and high-frequency capacitance—voltage curves of Metal—Oxide—Semiconductor Capacitors are presented to illustrate giant electron and hole trapping capacitances at many simultaneously present two-charge-state and one-trapped-carrier, or one-energy-level impurity species. Models described include a donor electron trap and an acceptor hole trap, both donors, both acceptors, both shallow energy levels, both deep, one shallow and one deep, and the identical donor and acceptor. Device and material parameters are selected to simulate chemically and physically realizable capacitors for fundamental trapping parameter characterizations and for electrical and optical signal processing applications. (invited papers)

  8. Capacitance-voltage characteristics of GaAs ion-implanted structures

    Directory of Open Access Journals (Sweden)

    Privalov E. N.

    2008-08-01

    Full Text Available A noniterative numerical method is proposed to calculate the barrier capacitance of GaAs ion-implanted structures as a function of the Schottky barrier bias. The features of the low- and high-frequency capacitance-voltage characteristics of these structures which are due to the presence of deep traps are elucidated.

  9. Impact of the silicon substrate resistivity and growth condition on the deep levels in Ni-Au/AlN/Si MIS Capacitors

    Science.gov (United States)

    Wang, Chong; Simoen, Eddy; Zhao, Ming; Li, Wei

    2017-10-01

    Deep levels formed under different growth conditions of a 200 nm AlN buffer layer on B-doped Czochralski Si(111) substrates with different resistivity were investigated by deep-level transient spectroscopy (DLTS) on metal-insulator-semiconductor capacitors. Growth-temperature-dependent Al diffusion in the Si substrate was derived from the free carrier density obtained by capacitance-voltage measurement on samples grown on p- substrates. The DLTS spectra revealed a high concentration of point and extended defects in the p- and p+ silicon substrates, respectively. This indicated a difference in the electrically active defects in the silicon substrate close to the AlN/Si interface, depending on the B doping concentration.

  10. Assessment of an ultrasonic sensor and a capacitance probe for measurement of two-phase mixture level

    International Nuclear Information System (INIS)

    Kim, Chang Hyun; Lee, Dong Won; No, Hee Cheon

    2004-01-01

    We perform a comparison of two-phase mixture levels measured by an ultrasonic sensor and a two-wire type capacitance probe with visual data under the same experimental conditions. A series of experiments are performed with various combinations of airflow and initial water level using a test vessel with a height of 2m and an inner diameter of 0.3 m under atmospheric pressure and room temperature. The ultrasonic sensor measures the two-phase mixture level with a maximum error of 1.77% with respect to the visual data. The capacitance probe severely under-predicts the level data in the high void fraction region. The cause of the error is identified as the change of the dielectric constant as the void fraction changes when the probe is applied to the measurement of the two-phase mixture levels. A correction method for the capacitance probe is proposed by correcting the change of dielectric constant of the two-phase mixture. The correction method for the capacitance probe produces a r.m.s. error of 5.4%. (author)

  11. Spectroscopy of Deep Traps in Cu2S-CdS Junction Structures

    Directory of Open Access Journals (Sweden)

    Eugenijus Gaubas

    2012-12-01

    Full Text Available Cu2S-CdS junctions of the polycrystalline material layers have been examined by combining the capacitance deep level transient spectroscopy technique together with white LED light additional illumination (C-DLTS-WL and the photo-ionization spectroscopy (PIS implemented by the photocurrent probing. Three types of junction structures, separated by using the barrier capacitance characteristics of the junctions and correlated with XRD distinguished precipitates of the polycrystalline layers, exhibit different deep trap spectra within CdS substrates.

  12. Scanning ion deep level transient spectroscopy: II. Ion irradiated Au-Si Schottky junctions

    International Nuclear Information System (INIS)

    Laird, J S; Jagadish, C; Jamieson, D N; Legge, G J F

    2006-01-01

    Here we introduce a new technique called scanning ion deep level transient spectroscopy (SIDLTS) for the spatial analysis of electrically active defects in devices. In the first part of this paper, a simple theory behind SIDLTS was introduced and factors determining its sensitivity and resolution were discussed. In this paper, we demonstrate the technique on MeV boron implantation induced defects in an Au-Si Schottky junction. SIDLTS measurements are compared with capacitance DLTS measurements over the temperature range, 100-300 K. SIDLTS analyses indicate the presence of two levels, one of which was positively identified as the E c - 0.23 eV divacancy level. The high sensitivity of SIDLTS is verified and the advantages and limitations of the technique are discussed in light of non-exponential components in the charge transient response. Reasons for several undetected levels are also discussed

  13. Levels of semenogelin in human spermatozoa decrease during capacitation: involvement of reactive oxygen species and zinc.

    Science.gov (United States)

    de Lamirande, E; Lamothe, G

    2010-07-01

    Semenogelin (Sg), the main protein of human semen coagulum, prevents sperm capacitation. The objective of this study was to examine the role of Sg and its mechanism of action. Sg blocked sperm capacitation triggered by various stimuli, via inhibition of superoxide anion (O(2)*-; luminescence assay) and nitric oxide (NO*; tested using diaminofluorescein) generation. Triton-soluble and -insoluble sperm fractions contained Sg and Sg peptides (immunoblotting), the level of which decreased with initiation of capacitation. This drop was prevented by superoxide dismutase and NO* synthase inhibitor and was reproduced by addition of O(2)*- and NO*. Zinc (Zn(2+)) blocked and a zinc chelator (TPEN) promoted the decline in Sg levels. There was a decreased labelling of Sg on the head in capacitating spermatozoa with the two fixation techniques tested (immunocytochemistry). Reactive oxygen species (ROS) (O(2)*- and NO*) caused, these changes, and zinc prevented them. Spermatozoa quickly internalized Sg upon incubation and Sg was then rapidly degraded in a zinc-inhibitable manner. Sg blocked capacitation mainly via inhibition of ROS generation. Spermatozoa appeared permeable to Sg and processed Sg in a zinc-inhibitable fashion. ROS themselves could promote sperm disposal of Sg which maybe one of the mechanisms that allows initiation of capacitation.

  14. Assessment of an ultrasonic sensor and a capacitance probe for measurement of two-phase mixture level

    International Nuclear Information System (INIS)

    Kim, Chang Hyun; Lee, Dong Won; No, Hee Cheon

    2004-01-01

    We performed a comparison of two-phase mixture levels measured by an ultrasonic sensor and a two-wire type capacitance probe with visual data under the same experimental conditions. A series of experiments are performed with various combinations of airflow and initial water level using a test vessel with a height of 2m and an inner diameter of 0.3m. The ultrasonic sensor measured the two-phase mixture level with a maximum error of 1.77% with respect to the visual data. The capacitance probe severely under-predicted the level data in the high void fraction region. The cause of the error was identified as the change of the dielectric constant as the void fraction changes when the probe is applied to the measurement of the two-phase mixture levels. A correction method for the capacitance probe is proposed by correcting the change of the dielectric constant of the two-phase mixture. The correction method for the capacitance probe produces a r.m.s. error of 5.4%. The present experimental data are compared with the existing pool void fraction correlations based on drift-flux model. The Kataoka-Ishii correlation has the best agreement with the present experimental data with an r.m.s error of 2.5%

  15. The capacitance of Pt/Pb0.65La0.28Ti0.96O3/Pt structures

    International Nuclear Information System (INIS)

    Shaw, T.M.; Laibowitz, R.B.; Beach, D.; Duncombe, P.R.

    1996-01-01

    The capacitance/voltage characteristics of thin paraelectric lead lanthanum titanate films are measured using platinum electrodes. The films have a maximum capacitance when either a small positive or negative bias voltage is applied. This characteristic is consistent with the electrode interfaces acting as Schottky-like barriers. The voltage at which the capacitance maxima occur increases linearly with film thickness indicating that the film is highly resistive. On the basis of the high apparent film resistance it is proposed that the voltage dependence of the capacitance of the electrode interfaces arises from the ionization of deep level traps within the film and not from depletion layers associated with shallow donor or acceptor states. Application of voltages larger than about 2 endash 3 V results in the disappearance of the capacitance maxima indicating that irreversible changes in the electrode interfaces occur at higher electric fields. copyright 1995 American Institute of Physics

  16. 3D capacitive tactile sensor using DRIE micromachining

    Science.gov (United States)

    Chuang, Chiehtang; Chen, Rongshun

    2005-07-01

    This paper presents a three dimensional micro capacitive tactile sensor that can detect normal and shear forces which is fabricated using deep reactive ion etching (DRIE) bulk silicon micromachining. The tactile sensor consists of a force transmission plate, a symmetric suspension system, and comb electrodes. The sensing character is based on the changes of capacitance between coplanar sense electrodes. High sensitivity is achieved by using the high aspect ratio interdigital electrodes with narrow comb gaps and large overlap areas. The symmetric suspension mechanism of this sensor can easily solve the coupling problem of measurement and increase the stability of the structure. In this paper, the sensor structure is designed, the capacitance variation of the proposed device is theoretically analyzed, and the finite element analysis of mechanical behavior of the structures is performed.

  17. Profiling of barrier capacitance and spreading resistance using a transient linearly increasing voltage technique.

    Science.gov (United States)

    Gaubas, E; Ceponis, T; Kusakovskij, J

    2011-08-01

    A technique for the combined measurement of barrier capacitance and spreading resistance profiles using a linearly increasing voltage pulse is presented. The technique is based on the measurement and analysis of current transients, due to the barrier and diffusion capacitance, and the spreading resistance, between a needle probe and sample. To control the impact of deep traps in the barrier capacitance, a steady state bias illumination with infrared light was employed. Measurements of the spreading resistance and barrier capacitance profiles using a stepwise positioned probe on cross sectioned silicon pin diodes and pnp structures are presented.

  18. High temperature annealing effects on deep-level defects in a high purity semi-insulating 4H-SiC substrate

    Energy Technology Data Exchange (ETDEWEB)

    Iwamoto, Naoya, E-mail: naoya.iwamoto@smn.uio.no; Azarov, Alexander; Svensson, Bengt G. [Department of Physics, Center for Materials Science and Nanotechnology, University of Oslo, P.O. Box 1048 Blindern, N-0316 Oslo (Norway); Ohshima, Takeshi [Japan Atomic Energy Agency, 1233 Watanuki, Takasaki, 370-1292 Gunma (Japan); Moe, Anne Marie M. [Washington Mills AS, N-7300 Orkanger (Norway)

    2015-07-28

    Effects of high-temperature annealing on deep-level defects in a high-purity semi-insulating 4H silicon carbide substrate have been studied by employing current-voltage, capacitance-voltage, junction spectroscopy, and chemical impurity analysis measurements. Secondary ion mass spectrometry data reveal that the substrate contains boron with concentration in the mid 10{sup 15 }cm{sup −3} range, while other impurities including nitrogen, aluminum, titanium, vanadium and chromium are below their detection limits (typically ∼10{sup 14 }cm{sup −3}). Schottky barrier diodes fabricated on substrates annealed at 1400–1700 °C exhibit metal/p-type semiconductor behavior with a current rectification of up to 8 orders of magnitude at bias voltages of ±3 V. With increasing annealing temperature, the series resistance of the Schottky barrier diodes decreases, and the net acceptor concentration in the substrates increases approaching the chemical boron content. Admittance spectroscopy results unveil the presence of shallow boron acceptors and deep-level defects with levels in lower half of the bandgap. After the 1400 °C annealing, the boron acceptor still remains strongly compensated at room temperature by deep donor-like levels located close to mid-gap. However, the latter decrease in concentration with increasing annealing temperature and after 1700 °C, the boron acceptor is essentially uncompensated. Hence, the deep donors are decisive for the semi-insulating properties of the substrates, and their thermal evolution limits the thermal budget for device processing. The origin of the deep donors is not well-established, but substantial evidence supporting an assignment to carbon vacancies is presented.

  19. Sensitivity Enhancement of a PPM Level Capacitive Moisture Sensor

    Directory of Open Access Journals (Sweden)

    Lokesh Kumar

    2017-05-01

    Full Text Available Measurement of moisture at ppm or ppb level is very difficult and the fabrication of such sensors at low cost is always challenging. High sensitivity is an important parameter for trace level (ppm humidity sensors. Anelectronic detection circuit for interfacing the humidity sensor with high sensitivity requires a simple hardware circuit with few active devices. The recent trends for increasing the sensitivity include fabricating nanoporous film with a very large surface area. In the present work, the sensitivity of a parallel plate capacitive type sensor with metal oxide sensing film has been significantly improved with an aim to detect moisture from 3 to 100 ppm in the industrial process gases used to fabricate semiconductors and other sensitive electronic devices. The sensitivity has been increased by (i fabricating a nanoporous film of aluminum oxide using the sol-gel method and (ii increasing the cross-sectional area of a parallel plate capacitor. A novel double sided capacitive structure has been proposed where two capacitors have been fabricated—one on the top and one on the bottom side of a flat alumina substrate—and then the capacitors are connected in parallel. The structure has twice the sensitivity of a single sensor in the same ppm range but the size of the structure remains unchanged. The important characteristics of the sensors such as the sensitivity (S = Δ C Δ p p m × 100 , the response time (tr, and the recovery time (tc are determined and compared with a commercial SHAW, UKdew point meter. The fabricated double sided sensor has comparable sensitivity (S = 100%, tr (s = 28, tc (s = 40 with the commercial meter (S = 100.5%, tr (s = 258 but has a faster response time. The proposed method of sensitivity enhancement is simple, and mass producible.

  20. Capacitance-voltage investigation of silicon photodiodes damaged by MeV energy light ions

    International Nuclear Information System (INIS)

    Kalinka, G.; Simon, A.; Novak, M.; Kiss, A.Z.

    2006-01-01

    Complete text of publication follows. Nuclear radiation creates not only deep centers, but in addition influences shallow dopant concentration in semiconductors, as well. At a given temperature the maximum frequency a center can respond to depends on its energy level, therefore the capacitance-voltage (C-V) characteristics of radiation damaged semiconductor diodes should ideally be measured as function of frequency in order to obtain the physical and energy depth distribution of ionized centers [1,2]. In our experiments C-V plots of MeV energy ion irradiated photodiodes were taken at fixed 1 kHz frequency, which is low enough to be sensitive at room temperature to some of the deep levels expected. During, for example, an irradiation with 5.5 MeV α particles the capacitance of a p + nn + diode increased significantly at low voltages, but showed rather small changes at higher ones. The former turned out to be merely related to a decrease of the built in voltage, corresponding to a lifetime to relaxation type transition of the semiconductor [3]. Rescaling C-V data for this change, the remaining, actual capacitance changes could be interpreted as related to nuclear recoil caused damage located around the end of particle tracks. C-V technique has also been used for follow up investigation of spontaneous self annealing at room temperature of irradiated samples. This is shown here by plotting capacitance data normalized to their virgin values as function of depletion depth for irradiation with 430 keV protons, whose range is about 5 μm. The sensitivity of the method is illustrated for low fluence of 6.5 MeV oxygen, whose range is 5 μm, too, and where the normalization is now made to data taken one week after the irradiation. Acknowledgement This work was supported by the Hungarian Research and Technology Innovation Fund and the Croatian Ministry of Science, Education and Sports within the framework of the Hungarian-Croatian Intergovernmental Science and Technology Co

  1. Capacitive Sensing of Glucose in Electrolytes Using Graphene Quantum Capacitance Varactors.

    Science.gov (United States)

    Zhang, Yao; Ma, Rui; Zhen, Xue V; Kudva, Yogish C; Bühlmann, Philippe; Koester, Steven J

    2017-11-08

    A novel graphene-based variable capacitor (varactor) that senses glucose based on the quantum capacitance effect was successfully developed. The sensor utilizes a metal-oxide-graphene varactor device structure that is inherently compatible with passive wireless sensing, a key advantage for in vivo glucose sensing. The graphene varactors were functionalized with pyrene-1-boronic acid (PBA) by self-assembly driven by π-π interactions. Successful surface functionalization was confirmed by both Raman spectroscopy and capacitance-voltage characterization of the devices. Through glucose binding to the PBA, the glucose concentration in the buffer solutions modulates the level of electrostatic doping of the graphene surface to different degrees, which leads to capacitance changes and Dirac voltage shifts. These responses to the glucose concentration were shown to be reproducible and reversible over multiple measurement cycles, suggesting promise for eventual use in wireless glucose monitoring.

  2. Seawater capacitance – a promising proxy for mapping and characterizing drifting hydrocarbon plumes in the deep ocean

    Directory of Open Access Journals (Sweden)

    J. A. Fleming

    2012-12-01

    Full Text Available Hydrocarbons released into the deep ocean are an inevitable consequence of natural seep, seafloor drilling, and leaking wellhead-to-collection-point pipelines. The Macondo 252 (Deepwater Horizon well blowout of 2010 was even larger than the Ixtoc event in the Gulf of Campeche in 1979. History suggests it will not be the last accidental release, as deepwater drilling expands to meet an ever-growing demand. For those who must respond to this kind of disaster, the first line of action should be to know what is going on. This includes knowing where an oil plume is at any given time, where and how fast it is moving, and how it is evolving or degrading. We have experimented in the laboratory with induced polarization as a method to track hydrocarbons in the seawater column and find that finely dispersed oil in seawater gives rise to a large distributed capacitance. From previous sea trials, we infer this could potentially be used to both map and characterize oil plumes, down to a ratio of less than 0.001 oil-to-seawater, drifting and evolving in the deep ocean. A side benefit demonstrated in some earlier sea trials is that this same approach in modified form can also map certain heavy placer minerals, as well as communication cables, pipelines, and wrecks buried beneath the seafloor.

  3. Effect of swift heavy ion irradiation on deep levels in Au /n-Si (100) Schottky diode studied by deep level transient spectroscopy

    Science.gov (United States)

    Kumar, Sandeep; Katharria, Y. S.; Kumar, Sugam; Kanjilal, D.

    2007-12-01

    In situ deep level transient spectroscopy has been applied to investigate the influence of 100MeV Si7+ ion irradiation on the deep levels present in Au/n-Si (100) Schottky structure in a wide fluence range from 5×109to1×1012ions cm-2. The swift heavy ion irradiation introduces a deep level at Ec-0.32eV. It is found that initially, trap level concentration of the energy level at Ec-0.40eV increases with irradiation up to a fluence value of 1×1010cm-2 while the deep level concentration decreases as irradiation fluence increases beyond the fluence value of 5×1010cm-2. These results are discussed, taking into account the role of energy transfer mechanism of high energy ions in material.

  4. Capacitive Feedthroughs for Medical Implants.

    Science.gov (United States)

    Grob, Sven; Tass, Peter A; Hauptmann, Christian

    2016-01-01

    Important technological advances in the last decades paved the road to a great success story for electrically stimulating medical implants, including cochlear implants or implants for deep brain stimulation. However, there are still many challenges in reducing side effects and improving functionality and comfort for the patient. Two of the main challenges are the wish for smaller implants on one hand, and the demand for more stimulation channels on the other hand. But these two aims lead to a conflict of interests. This paper presents a novel design for an electrical feedthrough, the so called capacitive feedthrough, which allows both reducing the size, and increasing the number of included channels. Capacitive feedthroughs combine the functionality of a coupling capacitor and an electrical feedthrough within one and the same structure. The paper also discusses the progress and the challenges of the first produced demonstrators. The concept bears a high potential in improving current feedthrough technology, and could be applied on all kinds of electrical medical implants, even if its implementation might be challenging.

  5. EFFECT OF DIESEL CONTAMINATION ON CAPACITANCE VALUES OF CRUDE PALM OIL

    Directory of Open Access Journals (Sweden)

    C. H. FIZURA

    2014-06-01

    Full Text Available Measurement of crude palm oil (CPO contamination is a major concern in CPO quality monitoring. In this study, capacitive sensing technique was used to monitor diesel contamination levels in CPO. A low cost capacitive sensing system was developed by using AD7746 capacitance to digital converter. The capacitance value of CPO samples with different contamination levels (v/v% ranged from 0% to 50% was collected at a room temperature (25°C. The objective of this study is to find a relationship between capacitance values and diesel contamination levels in CPO. The results showed that capacitance value decreased as the diesel contamination levels increased. For the 0% to 50% contamination range, the regression equation was y = 0.0002x2 - 0.0125x + 0.936 with R2 value of 0.96. For the 0% to 10% contamination range (where the percentage was the representative of potential contaminations levels found in CPO the correlation equation was y = -0.02x + 0.95 with R2 value of 0.95. These results indicated that capacitive sensing technique has potential for CPO quality monitoring.

  6. Sputtered Encapsulation as Wafer Level Packaging for Isolatable MEMS Devices: A Technique Demonstrated on a Capacitive Accelerometer

    Directory of Open Access Journals (Sweden)

    Azrul Azlan Hamzah

    2008-11-01

    Full Text Available This paper discusses sputtered silicon encapsulation as a wafer level packaging approach for isolatable MEMS devices. Devices such as accelerometers, RF switches, inductors, and filters that do not require interaction with the surroundings to function, could thus be fully encapsulated at the wafer level after fabrication. A MEMSTech 50g capacitive accelerometer was used to demonstrate a sputtered encapsulation technique. Encapsulation with a very uniform surface profile was achieved using spin-on glass (SOG as a sacrificial layer, SU-8 as base layer, RF sputtered silicon as main structural layer, eutectic gold-silicon as seal layer, and liquid crystal polymer (LCP as outer encapsulant layer. SEM inspection and capacitance test indicated that the movable elements were released after encapsulation. Nanoindentation test confirmed that the encapsulated device is sufficiently robust to withstand a transfer molding process. Thus, an encapsulation technique that is robust, CMOS compatible, and economical has been successfully developed for packaging isolatable MEMS devices at the wafer level.

  7. Interpretation of transconductance dispersion in AlGaAs/InGaAs pseudomorphic high electron mobility transistor by capacitance deep level transient spectroscopy

    CERN Document Server

    Choi, K J; Yoo, H M; Lee, G Y

    1998-01-01

    The transconductance dispersion in AlGaAs/InGaAs PHEMT grown by MBE was interpreted by means of capacitance DLTS technique. When the gate bias was -0.2 V, the transconductance decreased at a very broad frequency range of 5.5 Hz -1.7x10 sup 4 Hz. However, when a positive bias was applied to the gate, the transconductance increased at a low frequency range and then decreased at a high frequency range. In the transconductance dispersion measurement as a function of temperature, the transition frequency shifted to higher frequency region with the increase in temperature. The emission energy for the change in the transition frequency was determined to be 0.394 eV from the temperature dependency of the transition frequency. In the capacitance DLTS measurements, we observed DX-center with thermal activation energy of 0.420 eV and two hole trap-like signals. The DX-center peak decreased as the filling pulse decreased from +0.6 V and disappeared at the bias of -0.1 V. Comparing the activation energy of DX-center in DL...

  8. Investigation of deep levels in GaInNAs

    International Nuclear Information System (INIS)

    Abulfotuh, F.; Balcioglu, A.; Friedman, D.; Geisz, J.; Kurtz, S.

    1999-01-01

    This paper presents and discusses the first Deep-Level transient spectroscopy (DLTS) data obtained from measurements carried out on both Schottky barriers and homojunction devices of GaInNAs. The effect of N and In doping on the electrical properties of the GaNInAs devices, which results in structural defects and interface states, has been investigated. Moreover, the location and densities of deep levels related to the presence of N, In, and N+In are identified and correlated with the device performance. The data confirmed that the presence of N alone creates a high density of shallow hole traps related to the N atom and structural defects in the device. Doping by In, if present alone, also creates low-density deep traps (related to the In atom and structural defects) and extremely deep interface states. On the other hand, the co-presence of In and N eliminates both the interface states and levels related to structural defects. However, the device still has a high density of the shallow and deep traps that are responsible for the photocurrent loss in the GaNInAs device, together with the possible short diffusion length. copyright 1999 American Institute of Physics

  9. Investigation of Deep Levels in GaInNas

    International Nuclear Information System (INIS)

    Balcioglu, A.; Friedman, D.; Abulfotuh, F.; Geisz, J.; Kurtz, S.

    1998-01-01

    This paper presents and discusses the first Deep-Level transient spectroscopy (DLTS) data obtained from measurements carried out on both Schottky barriers and homojunction devices of GaInNAs. The effect of N and In doping on the electrical properties of the GaNInAs devices, which results in structural defects and interface states, has been investigated. Moreover, the location and densities of deep levels related to the presence of N, In, and N+In are identified and correlated with the device performance. The data confirmed that the presence of N alone creates a high density of shallow hole traps related to the N atom and structural defects in the device. Doping by In, if present alone, also creates low-density deep traps (related to the In atom and structural defects) and extremely deep interface states. On the other hand, the co-presence of In and N eliminates both the interface states and levels related to structural defects. However, the device still has a high density of the shallow and deep traps that are responsible for the photocurrent loss in the GaNInAs device, together with the possible short diffusion length

  10. Investigation of deep level defects in epitaxial semiconducting zinc sulpho-selenide. Progress report, 15 June 1979-14 June 1980

    International Nuclear Information System (INIS)

    Wessels, B.W.

    1980-01-01

    In an effort to understand the defect structure of the ternary II-VI compound zinc sulpho-selenide, the binary compound zinc selenide was investigated. Thin single crystalline films of zinc selenide were heteroepitaxially grown on (100) GaAs. Epitaxial layers from 5 to 50 microns thick could be readily grown using a chemical vapor transport technique. The layers had an excellent morphology with few stacking faults and hillocks. Detailed epitaxial growth kinetics were examined as a function of temperature and reactant concentration. It was found that hydrogen flow rate, source and substrate temperature affect the growth rate of the epitaxial films. Au - ZnSe Schottky barrier diodes and ZnSe - GaAs n-p heterojunctions were prepared from the epitaxial layers. Current-voltage characteristics were measured on both types of diodes. From capacitance-voltage measurements the residual doping density of the epitaxial layers were found to be of the order of 10 14 - 10 15 cm -3 . Finally, we have begun to measure the deep level spectrum of both the Schottky barrier diodes and the heterojunctions. Deep level transient spectroscopy appears to be well suited for determining trapping states in ZnSe provided the material has a low enough resistivity

  11. Surface-Level Diversity and Decision-Making in Groups: When Does Deep-Level Similarity Help?

    OpenAIRE

    2006-01-01

    Abstract We examined how surface-level diversity (based on race) and deep-level similarities influenced three-person decision-making groups on a hidden-profile task. Surface-level homogeneous groups perceived their information to be less unique and spent less time on the task than surface-level diverse groups. When the groups were given the opportunity to learn about their deep-level similarities prior to t...

  12. Deep levels in silicon–oxygen superlattices

    International Nuclear Information System (INIS)

    Simoen, E; Jayachandran, S; Delabie, A; Caymax, M; Heyns, M

    2016-01-01

    This work reports on the deep levels observed in Pt/Al 2 O 3 /p-type Si metal-oxide-semiconductor capacitors containing a silicon–oxygen superlattice (SL) by deep-level transient spectroscopy. It is shown that the presence of the SL gives rise to a broad band of hole traps occurring around the silicon mid gap, which is absent in reference samples with a silicon epitaxial layer. In addition, the density of states of the deep layers roughly scales with the number of SL periods for the as-deposited samples. Annealing in a forming gas atmosphere reduces the maximum concentration significantly, while the peak energy position shifts from close-to mid-gap towards the valence band edge. Based on the flat-band voltage shift of the Capacitance–Voltage characteristics it is inferred that positive charge is introduced by the oxygen atomic layers in the SL, indicating the donor nature of the underlying hole traps. In some cases, a minor peak associated with P b dangling bond centers at the Si/SiO 2 interface has been observed as well. (paper)

  13. Capacitance properties and simulation of the AlGaN/GaN Schottky heterostructure

    International Nuclear Information System (INIS)

    Harmatha, Ladislav; Ľubica, Stuchlíková; Juraj, Racko; Juraj, Marek; Juraj, Pecháček; Peter, Benko; Michal, Nemec; Juraj, Breza

    2014-01-01

    Highlights: • Dependences of CV characteristics of the AlGaN/GaN structure on frequency and temperature variations. • Identification of electrical activity of defects by capacitance DLTS. • Simulating the properties of the GaN/Al 0.2 GaN 0.8 /GaN Schottky heterostructure. - Abstract: The paper presents the results of capacitance measurements on GaN/AlGaN/GaN Schottky heterostructures grown on an Al 2 O 3 substrate by Low-Pressure Metal–Organic Vapour-Phase Epitaxy (LP-MOVPE). Dependences of the capacitance–voltage (CV) characteristics on the frequency of the measuring signal allow analysing the properties of the 2D electron gas (2DEG) at the AlGaN/GaN heterojunction. Exact location of the hetero-interface below the surface (20 nm) was determined from the concentration profile. Temperature variations of the CV curves reveal the influence of bulk defects in GaN and of the traps at the AlGaN/GaN interface. Electrical activity of these defects was characterized by capacitance Deep Level Transient Fourier Spectroscopy (DLTFS). Experimental results of CV measurements were supported by simulating the properties of the GaN/Al 0.2 GaN 0.8 /GaN Schottky heterostructure in dependence on the influence of the concentration of donor-like traps in GaN and of the temperature upon the CV curves

  14. PC operated acoustic transient spectroscopy of deep levels in MIS structures

    International Nuclear Information System (INIS)

    Bury, P.; Jamnicky, I.

    1996-01-01

    A new version of acoustic deep-level transient spectroscopy is presented to study the traps at the insulator-semiconductor interface. The acoustic deep-level transient spectroscopy uses an acoustoelectric response signal produced by the MIS structure interface when a longitudinal acoustic wave propagates through a structure. The acoustoelectric response signal is extremely sensitive to external conditions of the structure and reflects any changes in the charge distribution, connected also with charged traps. In comparison with previous version of acoustic deep-level transient spectroscopy that closely coincides with the principle of the original deep-level transient spectroscopy technique, the present technique is based on the computer-evaluated isothermal transients and represents an improved, more efficient and time saving technique. Many tests on the software used for calculation as well as on experimental setup have been performed. The improved acoustic deep-level transient spectroscopy method has been applied for the Si(p) MIS structures. The deep-level parameters as activation energy and capture cross-section have been determined. (authors)

  15. False capacitance of supercapacitors

    OpenAIRE

    Ragoisha, G. A.; Aniskevich, Y. M.

    2016-01-01

    Capacitance measurements from cyclic voltammetry, galvanostatic chronopotentiometry and calculation of capacitance from imaginary part of impedance are widely used in investigations of supercapacitors. The methods assume the supercapacitor is a capacitor, while real objects correspond to different equivalent electric circuits and show various contributions of non-capacitive currents to the current which is used for calculation of capacitance. Specific capacitances which are presented in F g-1...

  16. Deep Ocean Contribution to Sea Level Rise

    Science.gov (United States)

    Chang, L.; Sun, W.; Tang, H.; Wang, Q.

    2017-12-01

    The ocean temperature and salinity change in the upper 2000m can be detected by Argo floats, so we can know the steric height change of the ocean. But the ocean layers above 2000m represent only 50% of the total ocean volume. Although the temperature and salinity change are small compared to the upper ocean, the deep ocean contribution to sea level might be significant because of its large volume. There has been some research on the deep ocean rely on the very sparse situ observation and are limited to decadal and longer-term rates of change. The available observational data in the deep ocean are too spares to determine the temporal variability, and the long-term changes may have a bias. We will use the Argo date and combine the situ data and topographic data to estimate the temperature and salinity of the sea water below 2000m, so we can obtain a monthly data. We will analyze the seasonal and annual change of the steric height change due to the deep ocean between 2005 and 2016. And we will evaluate the result combination the present-day satellite and in situ observing systems. The deep ocean contribution can be inferred indirectly as the difference between the altimetry minus GRACE and Argo-based steric sea level.

  17. The correlation of the results of capacitance mapping and of sheet resistance mapping in semi-insulating 6H-SiC

    International Nuclear Information System (INIS)

    Lin Shenghuang; Chen Zhiming; Liang Peng; Jiang Dong; Xie Huajie; Yang Ying

    2010-01-01

    A combination of complex surface capacitance mapping and sheet resistance mapping is applied to establish the origin of resistance variations on semi-insulating (SI) 6H-SiC substrates. The direct correlation between the capacitance quadrature and the sheet resistance is found in vanadium-doped SI samples. Regions with low capacitance quadrature show high sheet resistance. This indicates, associated with the nonhomogeneity of sheet resistance on the substrate, that the quality of crystallization is not good enough, which also leads to resistivity nonhomogeneity when comparing with different types of deep defects. According to the capacitance mapping, the region with bad crystallization quality has a high radio absorption coefficient. Another correlation is established between the capacitance in-phase and sheet resistance for the vanadium-doped sample. In this sample, the capacitance in-phase map shows not only the surface topography, but also the same distribution trend as the sheet resistance, namely, regions of high capacitance in-phase reveal high sheet resistance.

  18. Negative quantum capacitance induced by midgap states in single-layer graphene.

    Science.gov (United States)

    Wang, Lin; Wang, Yang; Chen, Xiaolong; Zhu, Wei; Zhu, Chao; Wu, Zefei; Han, Yu; Zhang, Mingwei; Li, Wei; He, Yuheng; Xiong, Wei; Law, Kam Tuen; Su, Dangsheng; Wang, Ning

    2013-01-01

    We demonstrate that single-layer graphene (SLG) decorated with a high density of Ag adatoms displays the unconventional phenomenon of negative quantum capacitance. The Ag adatoms act as resonant impurities and form nearly dispersionless resonant impurity bands near the charge neutrality point (CNP). Resonant impurities quench the kinetic energy and drive the electrons to the Coulomb energy dominated regime with negative compressibility. In the absence of a magnetic field, negative quantum capacitance is observed near the CNP. In the quantum Hall regime, negative quantum capacitance behavior at several Landau level positions is displayed, which is associated with the quenching of kinetic energy by the formation of Landau levels. The negative quantum capacitance effect near the CNP is further enhanced in the presence of Landau levels due to the magnetic-field-enhanced Coulomb interactions.

  19. Low energy electron irradiation induced deep level defects in 6H-SiC: The implication for the microstructure of the deep levels E1/E2

    International Nuclear Information System (INIS)

    Chen, X.D.; Fung, S.; Beling, C.D.; Lui, M.K.; Ling, C.C.; Yang, C.L.; Ge, W.K.; Wang, J.N.; Gong, M.

    2004-01-01

    N-type 6H-SiC samples irradiated with electrons having energies of E e =0.2, 0.3, 0.5, and 1.7 were studied by deep level transient technique. No deep level was detected at below 0.2 MeV irradiation energy while for E e ≥0.3 MeV, deep levels ED1, E 1 /E 2 , and E i appeared. By considering the minimum energy required to displace the C atom or the Si atom in the SiC lattice, it is concluded that generation of the deep levels E 1 /E 2 , as well as ED1 and E i , involves the displacement of the C atom in the SiC lattice

  20. Distribution of coronary arterial capacitance in a canine model.

    Science.gov (United States)

    Lader, A S; Smith, R S; Phillips, G C; McNamee, J E; Abel, F L

    1998-03-01

    The capacitative properties of the major left coronary arteries, left main (LM), left anterior descending (LAD), and left circumflex (LCX), were studied in 19 open-chest isolated dog hearts. Capacitance was determined by using ramp perfusion and a left ventricular-to-coronary shunt diastolic decay method; both methods gave similar results, indicating a minimal systolic capacitative component. Increased pericardial pressure (PCP), 25 mmHg, was used to experimentally alter transmural wall pressure. The response to increased PCP was different in the LAD vs. LCX; increasing PCP decreased capacitance in the LCX but increased capacitance in the LAD. This may have been due to the different intramural vs. epicardial volume distribution of these vessels and a decrease in intramural tension during increased PCP. Increased PCP decreased LCX capacitance by approximately 13%, but no changes in conductance or zero flow pressure intercept occurred in any of the three vessels, i. e., evidence against the waterfall theory of vascular collapse at these levels of PCP. Coronary arterial capacitance was also linearly related to perfusion pressure.

  1. High resolution deep level transient spectroscopy and process-induced defects in silicon

    International Nuclear Information System (INIS)

    Evans-Freeman, J.H.; Emiroglu, D.; Vernon-Parry, K.D.

    2004-01-01

    High resolution, or Laplace, deep level transient spectroscopy (LDLTS) enables the identification of very closely spaced energetic levels in a semiconductor bandgap. DLTS may resolve peaks with a separation of tens of electron volts, but LDLTS can resolve defect energy separations as low as a few MeV. In this paper, we present results from LDLTS applied to ion implantation-induced defects in silicon, with particular emphasis on characterisation of end-of-range interstitial type defects. Silicon was implanted with a variety of ions from mass 28 to 166. A combination of LDLTS and direct capture cross-section measurements was employed to show that electrically active small extended defects were present in the as-implanted samples. Larger dislocations were then generated in Si by oxygenation to act as a control sample. These stacking faults had typical lengths of microns, and their electrical activity was subsequently characterised by LDLTS. This was to establish the sensitivity of LDLTS to defects whose carrier capture is characterised by a non-exponential filling process and an evolving band structure as carrier capture proceeds. The LDLTS spectra show several components in capacitance transients originating from both the end-of-range defects, and the stacking faults, and also clearly show that the carrier emission rates reduce as these extended defects fill with carriers. The end-of-range defects and the stacking faults are shown to have the same electrical behaviour

  2. A piezoelectric micro control valve with integrated capacitive sensing for ambulant blood pressure waveform monitoring

    Science.gov (United States)

    Groen, Maarten S.; Wu, Kai; Brookhuis, Robert A.; van Houwelingen, Marc J.; Brouwer, Dannis M.; Lötters, Joost C.; Wiegerink, Remco J.

    2014-12-01

    We have designed and characterized a MEMS microvalve with built-in capacitive displacement sensing and fitted it with a miniature piezoelectric actuator to achieve active valve control. The integrated displacement sensor enables high bandwidth proportional control of the gas flow through the valve. This is an essential requirement for non-invasive blood pressure waveform monitoring based on following the arterial pressure with a counter pressure. Using the capacitive sensor, we demonstrate negligible hysteresis in the valve control characteristics. Fabrication of the valve requires only two mask steps for deep reactive ion etching (DRIE) and one release etch.

  3. A piezoelectric micro control valve with integrated capacitive sensing for ambulant blood pressure waveform monitoring

    International Nuclear Information System (INIS)

    Groen, Maarten S; Wu, Kai; Brookhuis, Robert A; Lötters, Joost C; Wiegerink, Remco J; Van Houwelingen, Marc J; Brouwer, Dannis M

    2014-01-01

    We have designed and characterized a MEMS microvalve with built-in capacitive displacement sensing and fitted it with a miniature piezoelectric actuator to achieve active valve control. The integrated displacement sensor enables high bandwidth proportional control of the gas flow through the valve. This is an essential requirement for non-invasive blood pressure waveform monitoring based on following the arterial pressure with a counter pressure. Using the capacitive sensor, we demonstrate negligible hysteresis in the valve control characteristics. Fabrication of the valve requires only two mask steps for deep reactive ion etching (DRIE) and one release etch. (paper)

  4. Impacts of Carrier Transport and Deep Level Defects on Delayed Cathodoluminescence in Droop-Mitigating InGaN/GaN LEDs

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Zhibo; Singh, Akshay; Chesin, Jordan; Armitage, Rob; Wildeson, Isaac; Deb, Parijat; Armstrong, Andrew; Kisslinger, Kim; Stach, Eric; Gradecak, Silvija

    2017-07-25

    Prevalent droop mitigation strategies in InGaN-based LEDs require structural and/or compositional changes in the active region but are accompanied by a detrimental reduction in external quantum efficiency (EQE) due to increased Shockley-Read-Hall recombination. Understanding the optoelectronic impacts of structural modifications in InGaN/GaN quantum wells (QW) remains critical for emerging high-power LEDs. In this work, we use a combination of electron microscopy tools along with standard electrical characterization to investigate a wide range of low-droop InGaN/GaN QW designs. We find that chip-scale EQE is uncorrelated with extended well-width fluctuations observed in scanning transmission electron microscopy. Further, we observe delayed cathodoluminescence (CL) response from designs in which calculated band profiles suggest facile carrier escape from individual QWs. Samples with the slowest CL responses also exhibit the lowest EQEs and highest QW defect densities in deep level optical spectroscopy. We propose a model in which the electron beam (i) passivates deep level defect states and (ii) drives charge carrier accumulation and subsequent reduction of the built-in field across the multi-QW active region, resulting in delayed radiative recombination. Finally, we correlate CL rise dynamics with capacitance-voltage measurements and show that certain early-time components of the CL dynamics reflect the open circuit carrier population within one or more QWs.

  5. Role of Catecholamine in Tumor Angiogenesis Linked to Capacitance Relaxation Phenomenon

    Directory of Open Access Journals (Sweden)

    Guangyue SHI

    2010-08-01

    Full Text Available The present paper deals with the CgA level during metastasis linked with Capacitance relaxation phenomenon in cancer cell. CgA co-stored and correlated by exocytosis with catecholamines is a precursor to peptides that exert feedback regulatory control on catecholamine secretion. It is to be noted that CgA was the most sensitive marker for detecting patients with tumor angiogenesis. The progressive rise in CgA increases with the tumor size and this fact has been correlated with the Capacitance relaxation phenomenon (T. K. Basak, US patent No. 5691178, 1997 in different stages. The experimental results of Capacitance relaxation phenomenon were given as inputs to a model for correlation with the CgA level. This model is a control system model, the output of which is the CgA level. It is to be noted that the model is simulated in MATLAB. The expression of tumorogenisis in prostate and liver is also linked to Capacitance relaxation phenomenon in respect of its correlation with the CgA level.

  6. Deep defect levels in standard and oxygen enriched silicon detectors before and after **6**0Co-gamma-irradiation

    CERN Document Server

    Stahl, J; Lindström, G; Pintilie, I

    2003-01-01

    Capacitance Deep Level Transient Spectroscopy (C-DLTS) measurements have been performed on standard and oxygen-doped silicon detectors manufactured from high-resistivity n-type float zone material with left angle bracket 111 right angle bracket and left angle bracket 100 right angle bracket orientation. Three different oxygen concentrations were achieved by the so-called diffusion oxygenated float zone (DOFZ) process initiated by the CERN-RD48 (ROSE) collaboration. Before the irradiation a material characterization has been performed. In contrast to radiation damage by neutrons or high- energy charged hadrons, were the bulk damage is dominated by a mixture of clusters and point defects, the bulk damage caused by **6**0Co-gamma-radiation is only due to the introduction of point defects. The dominant electrically active defects which have been detected after **6**0Co-gamma-irradiation by C-DLTS are the electron traps VO//i, C//iC//s, V//2( = /-), V //2(-/0) and the hole trap C//i O//i. The main difference betwe...

  7. Solar Cell Capacitance Determination Based on an RLC Resonant Circuit

    Directory of Open Access Journals (Sweden)

    Petru Adrian Cotfas

    2018-03-01

    Full Text Available The capacitance is one of the key dynamic parameters of solar cells, which can provide essential information regarding the quality and health state of the cell. However, the measurement of this parameter is not a trivial task, as it typically requires high accuracy instruments using, e.g., electrical impedance spectroscopy (IS. This paper introduces a simple and effective method to determine the electric capacitance of the solar cells. An RLC (Resistor Inductance Capacitor circuit is formed by using an inductor as a load for the solar cell. The capacitance of the solar cell is found by measuring the frequency of the damped oscillation that occurs at the moment of connecting the inductor to the solar cell. The study is performed through simulation based on National Instruments (NI Multisim application as SPICE simulation software and through experimental capacitance measurements of a monocrystalline silicon commercial solar cell and a photovoltaic panel using the proposed method. The results were validated using impedance spectroscopy. The differences between the capacitance values obtained by the two methods are of 1% for the solar cells and of 9.6% for the PV panel. The irradiance level effect upon the solar cell capacitance was studied obtaining an increase in the capacitance in function of the irradiance. By connecting different inductors to the solar cell, the frequency effect upon the solar cell capacitance was studied noticing a very small decrease in the capacitance with the frequency. Additionally, the temperature effect over the solar cell capacitance was studied achieving an increase in capacitance with temperature.

  8. Capacitive chemical sensor

    Science.gov (United States)

    Manginell, Ronald P; Moorman, Matthew W; Wheeler, David R

    2014-05-27

    A microfabricated capacitive chemical sensor can be used as an autonomous chemical sensor or as an analyte-sensitive chemical preconcentrator in a larger microanalytical system. The capacitive chemical sensor detects changes in sensing film dielectric properties, such as the dielectric constant, conductivity, or dimensionality. These changes result from the interaction of a target analyte with the sensing film. This capability provides a low-power, self-heating chemical sensor suitable for remote and unattended sensing applications. The capacitive chemical sensor also enables a smart, analyte-sensitive chemical preconcentrator. After sorption of the sample by the sensing film, the film can be rapidly heated to release the sample for further analysis. Therefore, the capacitive chemical sensor can optimize the sample collection time prior to release to enable the rapid and accurate analysis of analytes by a microanalytical system.

  9. Capacitance probe for detection of anomalies in non-metallic plastic pipe

    Science.gov (United States)

    Mathur, Mahendra P.; Spenik, James L.; Condon, Christopher M.; Anderson, Rodney; Driscoll, Daniel J.; Fincham, Jr., William L.; Monazam, Esmail R.

    2010-11-23

    The disclosure relates to analysis of materials using a capacitive sensor to detect anomalies through comparison of measured capacitances. The capacitive sensor is used in conjunction with a capacitance measurement device, a location device, and a processor in order to generate a capacitance versus location output which may be inspected for the detection and localization of anomalies within the material under test. The components may be carried as payload on an inspection vehicle which may traverse through a pipe interior, allowing evaluation of nonmetallic or plastic pipes when the piping exterior is not accessible. In an embodiment, supporting components are solid-state devices powered by a low voltage on-board power supply, providing for use in environments where voltage levels may be restricted.

  10. Damage related deep electron levels in ion implanted GaAs

    International Nuclear Information System (INIS)

    Allsopp, D.W.E.; Peaker, A.R.

    1986-01-01

    A study has been made of the deep electron levels in semi-insulating GaAs implanted with either 78 Se + or 29 Si + ions and rendered n-type by subsequent annealing without encapsulation in partial pressures of arsenic or arsine. Three implantation related deep states were detected with concentration profiles approximating to the type of Gaussian distributions expected for point defects related to ion implantation damage. Further heat treatment of the samples at 500 0 C in a gas ambient of U 2 /H 2 substantially reduced concentration of these deep levels. Two of these states were thought to be related to displacements of the substrate atoms. The third, at Esubc -0.67 eV, was found in only 78 Se + ion implanted GaAs substrates and was thought to be a defect involving both Se and As atoms, rather than intrinsic lattice disorder. It is proposed that the annealing rate of these implantation related deep levels depends crucially on the in-diffusion of arsenic vacancies during heat treatments. (author)

  11. Structural, electronic properties, and quantum capacitance of B, N and P-doped armchair carbon nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Mousavi-Khoshdel, S. Morteza, E-mail: mmousavi@iust.ac.ir [Department of Chemistry, Iran University of Science and Technology, Tehran (Iran, Islamic Republic of); Jahanbakhsh-bonab, Parisa [Department of Chemistry, Iran University of Science and Technology, Tehran (Iran, Islamic Republic of); Targholi, Ehsan [Young Researchers and Elite Club, Abhar Branch, Islamic Azad University, Abhar (Iran, Islamic Republic of)

    2016-10-07

    Using DFT calculations, we study the structural parameters, electronic properties and quantum capacitance of N, B, and P-doped armchair carbon nanotubes (CNTs). Fermi level shifts towards conduction band and valence band in N- and B-doped CNTs, respectively. While in the case of P atom, despite having an extra valence electron than carbon, there is no shift in Fermi level. The results revealed from a symmetric capacitance enhancement in P-doped CNT and an asymmetric capacitance enhancement in B and N-doped CNTs. The greatest amount of quantum capacitance of N-doped (6, 6) CNT could be achieved at the concentration range of 0.1–0.15. - Highlights: • Exploration of variation in quantum capacitance of CNTs through doping N, B and P atoms. • Quantum capacitance of CNTs is sensitive to impurities entered in carbon nanotubes. • Maximum quantum capacitance of N-doped CNTs is achieved at the concentration range of 0.1–0.15.

  12. An approach to evaluate capacitance, capacitive reactance and resistance of pivoted pads of a thrust bearing

    Science.gov (United States)

    Prashad, Har

    1992-07-01

    A theoretical approach is developed for determining the capacitance and active resistance between the interacting surfaces of pivoted pads and thrust collar, under different conditions of operation. It is shown that resistance and capacitive reactance of a thrust bearing decrease with the number of pads times the values of these parameters for an individual pad, and that capacitance increases with the number of pads times the capacitance of an individual pad. The analysis presented has a potential to diagnose the behavior of pivoted pad thrust bearings with the angle of tilt and the ratio of film thickness at the leading to trailing edge, by determining the variation of capacitance, resistance, and capacitive reactance.

  13. High Temperature Capacitive Pressure Sensor Employing a SiC Based Ring Oscillator

    Science.gov (United States)

    Meredith, Roger D.; Neudeck, Philip G.; Ponchak, George E.; Beheim, Glenn M.; Scardelletti, Maximilian; Jordan, Jennifer L.; Chen, Liang-Yu; Spry, David J.; Krawowski, Michael J.; Hunter, Gary W.

    2011-01-01

    In an effort to develop harsh environment electronic and sensor technologies for aircraft engine safety and monitoring, we have used capacitive-based pressure sensors to shift the frequency of a SiC-electronics-based oscillator to produce a pressure-indicating signal that can be readily transmitted, e.g. wirelessly, to a receiver located in a more benign environment. Our efforts target 500 C, a temperature well above normal operating conditions of commercial circuits but within areas of interest in aerospace engines, deep mining applications and for future missions to the Venus atmosphere. This paper reports for the first time a ring oscillator circuit integrated with a capacitive pressure sensor, both operating at 500 C. This demonstration represents a significant step towards a wireless pressure sensor that can operate at 500 C and confirms the viability of 500 C electronic sensor systems.

  14. Ferroelectric negative capacitance domain dynamics

    Science.gov (United States)

    Hoffmann, Michael; Khan, Asif Islam; Serrao, Claudy; Lu, Zhongyuan; Salahuddin, Sayeef; Pešić, Milan; Slesazeck, Stefan; Schroeder, Uwe; Mikolajick, Thomas

    2018-05-01

    Transient negative capacitance effects in epitaxial ferroelectric Pb(Zr0.2Ti0.8)O3 capacitors are investigated with a focus on the dynamical switching behavior governed by domain nucleation and growth. Voltage pulses are applied to a series connection of the ferroelectric capacitor and a resistor to directly measure the ferroelectric negative capacitance during switching. A time-dependent Ginzburg-Landau approach is used to investigate the underlying domain dynamics. The transient negative capacitance is shown to originate from reverse domain nucleation and unrestricted domain growth. However, with the onset of domain coalescence, the capacitance becomes positive again. The persistence of the negative capacitance state is therefore limited by the speed of domain wall motion. By changing the applied electric field, capacitor area or external resistance, this domain wall velocity can be varied predictably over several orders of magnitude. Additionally, detailed insights into the intrinsic material properties of the ferroelectric are obtainable through these measurements. A new method for reliable extraction of the average negative capacitance of the ferroelectric is presented. Furthermore, a simple analytical model is developed, which accurately describes the negative capacitance transient time as a function of the material properties and the experimental boundary conditions.

  15. Decadal trends in deep ocean salinity and regional effects on steric sea level

    Science.gov (United States)

    Purkey, S. G.; Llovel, W.

    2017-12-01

    We present deep (below 2000 m) and abyssal (below 4000 m) global ocean salinity trends from the 1990s through the 2010s and assess the role of deep salinity in local and global sea level budgets. Deep salinity trends are assessed using all deep basins with available full-depth, high-quality hydrographic section data that have been occupied two or more times since the 1980s through either the World Ocean Circulation Experiment (WOCE) Hydrographic Program or the Global Ship-Based Hydrographic Investigations Program (GO-SHIP). All salinity data is calibrated to standard seawater and any intercruise offsets applied. While the global mean deep halosteric contribution to sea level rise is close to zero (-0.017 +/- 0.023 mm/yr below 4000 m), there is a large regional variability with the southern deep basins becoming fresher and northern deep basins becoming more saline. This meridional gradient in the deep salinity trend reflects different mechanisms driving the deep salinity variability. The deep Southern Ocean is freshening owing to a recent increased flux of freshwater to the deep ocean. Outside of the Southern Ocean, the deep salinity and temperature changes are tied to isopycnal heave associated with a falling of deep isopycnals in recent decades. Therefore, regions of the ocean with a deep salinity minimum are experiencing both a halosteric contraction with a thermosteric expansion. While the thermosteric expansion is larger in most cases, in some regions the halosteric compensates for as much as 50% of the deep thermal expansion, making a significant contribution to local sea level rise budgets.

  16. Percoll gradient-centrifuged capacitated mouse sperm have increased fertilizing ability and higher contents of sulfogalactosylglycerolipid and docosahexaenoic acid-containing phosphatidylcholine compared to washed capacitated mouse sperm.

    Science.gov (United States)

    Furimsky, Anna; Vuong, Ngoc; Xu, Hongbin; Kumarathasan, Premkumari; Xu, Min; Weerachatyanukul, Wattana; Bou Khalil, Maroun; Kates, Morris; Tanphaichitr, Nongnuj

    2005-03-01

    Although Percoll gradient centrifugation has been used routinely to prepare motile human sperm, its use in preparing motile mouse sperm has been limited. Here, we showed that Percoll gradient-centrifuged (PGC) capacitated mouse sperm had markedly higher fertilizing ability (sperm-zona pellucida [ZP] binding and in vitro fertilization) than washed capacitated mouse sperm. We also showed that the lipid profiles of PGC capacitated sperm and washed capacitated sperm differed significantly. The PGC sperm had much lower contents of cholesterol and phospholipids. This resulted in relative enrichment of male germ cell-specific sulfogalactosylglycerolipid (SGG), a ZP-binding ligand, in PGC capacitated sperm, and this would explain, in part, their increased ZP-binding ability compared with that of washed capacitated sperm. Analyses of phospholipid fatty acyl chains revealed that PGC capacitated sperm were enriched in phosphatidylcholine (PC) molecular species containing highly unsaturated fatty acids (HUFAs), with docosahexaenoic acid (DHA; C22: 6n-3) being the predominant HUFA (42% of total hydrocarbon chains of PC). In contrast, the level of PC-HUFAs comprising arachidonic acid (20:4n-6), docosapentaenoic acid (C22:5n-6), and DHA in washed capacitated sperm was only 27%. Having the highest unsaturation degree among all HUFAs in PC, DHA would enhance membrane fluidity to the uppermost. Therefore, membranes of PGC capacitated sperm would undergo fertilization-related fusion events at higher rates than washed capacitated sperm. These results suggested that PGC mouse sperm should be used in fertilization experiments and that SGG and DHA should be considered to be important biomarkers for sperm fertilizing ability.

  17. Thermally stimulated capacitance in gamma irradiated epitaxial 4H-SiC Schottky barrier diodes

    Science.gov (United States)

    Vigneshwara Raja, P.; Narasimha Murty, N. V. L.

    2018-04-01

    Deep level defects in 4H-SiC Schottky barrier diodes (SBDs) fabricated on n-type epitaxial 4H-SiC have been identified by thermally stimulated capacitance (TSCAP) spectroscopy prior to and after 60Co-gamma irradiation. The TSCAP measurements on the non-irradiated SBDs reveal two electron traps at Ec-0.63 eV (˜250 K) and Ec-1.13 eV (˜525 K), whereas only one trap at Ec-0.63 eV is identified by conventional thermally stimulated current (TSC) measurements. Hence, TSCAP spectroscopy is more effective in identifying deep level defects in epitaxial 4 H-SiC SBDs as compared to the TSC spectroscopy. Upon exposure to 60Co-gamma rays up to a dose of 100 Mrad, significant changes in the concentration of the traps at Ec-0.63 eV, Ec-1.13 eV, and one new trap at Ec-0.89 eV (˜420 K) are observed. The electrical characteristics of the SBDs are considerably changed after gamma irradiation. The dominant mechanisms responsible for the irradiation induced changes in the SBD electrical characteristics are analyzed by incorporating the trap signatures in the commercial Silvaco® TCAD device simulator. The extracted trap parameters of the irradiated SBDs may be helpful in predicting the survival of 4H-SiC SBD detectors at higher irradiation levels.

  18. A hybrid algorithm for stochastic single-source capacitated facility location problem with service level requirements

    Directory of Open Access Journals (Sweden)

    Hosseinali Salemi

    2016-04-01

    Full Text Available Facility location models are observed in many diverse areas such as communication networks, transportation, and distribution systems planning. They play significant role in supply chain and operations management and are one of the main well-known topics in strategic agenda of contemporary manufacturing and service companies accompanied by long-lasting effects. We define a new approach for solving stochastic single source capacitated facility location problem (SSSCFLP. Customers with stochastic demand are assigned to set of capacitated facilities that are selected to serve them. It is demonstrated that problem can be transformed to deterministic Single Source Capacitated Facility Location Problem (SSCFLP for Poisson demand distribution. A hybrid algorithm which combines Lagrangian heuristic with adjusted mixture of Ant colony and Genetic optimization is proposed to find lower and upper bounds for this problem. Computational results of various instances with distinct properties indicate that proposed solving approach is efficient.

  19. Aspheric surface measurement using capacitive probes

    Science.gov (United States)

    Tao, Xin; Yuan, Daocheng; Li, Shaobo

    2017-02-01

    With the application of aspheres in optical fields, high precision and high efficiency aspheric surface metrology becomes a hot research topic. We describe a novel method of non-contact measurement of aspheric surface with capacitive probe. Taking an eccentric spherical surface as the object of study, the averaging effect of capacitive probe measurement and the influence of tilting the capacitive probe on the measurement results are investigated. By comparing measurement results from simultaneous measurement of the capacitive probe and contact probe of roundness instrument, this paper indicates the feasibility of using capacitive probes to test aspheric surface and proposes the compensation method of measurement error caused by averaging effect and the tilting of the capacitive probe.

  20. The Deep-Level-Reasoning-Question Effect: The Role of Dialogue and Deep-Level-Reasoning Questions during Vicarious Learning

    Science.gov (United States)

    Craig, Scotty D.; Sullins, Jeremiah; Witherspoon, Amy; Gholson, Barry

    2006-01-01

    We investigated the impact of dialogue and deep-level-reasoning questions on vicarious learning in 2 studies with undergraduates. In Experiment 1, participants learned material by interacting with AutoTutor or by viewing 1 of 4 vicarious learning conditions: a noninteractive recorded version of the AutoTutor dialogues, a dialogue with a…

  1. A Neural Network Approach to Fluid Level Measurement in Dynamic Environments Using a Single Capacitive Sensor

    Directory of Open Access Journals (Sweden)

    Edin TERZIC

    2010-03-01

    Full Text Available A measurement system has been developed using a single tube capacitive sensor to accurately determine the fluid level in vehicular fuel tanks. A novel approach based on artificial neural networks based signal pre-processing and classification has been described in this article. A broad investigation on the Backpropagation neural network and some selected signal pre-processing filters, namely, Moving Mean, Moving Median, and Wavelet Filter has also been presented. An on field drive trial was conducted under normal driving conditions at various fuel volumes ranging from 5 L to 50 L to acquire training samples from the capacitive sensor. A second field trial was conducted to obtain test samples to verify the performance of the neural network. The neural network was trained and verified with 50 % of the training and test samples. The results obtained using the neural network approach having different filtration methods are compared with the results obtained using simple Moving Mean and Moving Median functions. It is demonstrated that the Backpropagation neural network with Moving Median filter produced the most accurate outcome compared with the other signal filtration methods.

  2. Influence of oxidation level on capacitance of electrochemical capacitors fabricated with carbon nanotube/carbon paper composites

    International Nuclear Information System (INIS)

    Hsieh, C.-T.; Chen, W.-Y.; Cheng, Y.-S.

    2010-01-01

    Gaseous oxidation of carbon papers (CPs) decorated with carbon nanotubes (CNTs) with varying degrees of oxidation was conducted to investigate the influence of surface oxides on the performance of electrochemical capacitors fabricated with oxidized CNT/CP composites. The oxidation period was found to significantly enhance the O/C atomic ratio on the composites, and the increase in oxygen content upon oxidation is mainly contributed by the formation of C=O and C-O groups. The electrochemical behavior of the capacitors was tested in 1 M H 2 SO 4 within a potential of 0 and 1 V vs. Ag/AgCl. Both superhydrophilicity and specific capacitance of the oxidized CNT/CP composites were found to increase upon oxidation treatment. A linearity increase of capacitance with O/C ratio can be attributed to the increase of the population of surface oxides on CNTs, which imparts excess sites for redox reaction (pseudocapacitance) and for the formation of double-layer (double-layer capacitance). The technique of ac impedance combined with equivalent circuit clearly showed that oxidized CNT/CP capacitor imparts not only enhanced capacitance but also a low equivalent series resistance.

  3. Electrochemical capacitance performance of titanium nitride nanoarray

    Energy Technology Data Exchange (ETDEWEB)

    Xie, Yibing, E-mail: ybxie@seu.edu.cn [School of Chemistry and Chemical Engineering, Southeast University, Nanjing 211189 (China); Suzhou Research Institute of Southeast University, Suzhou 215123 (China); Wang, Yong [School of Chemistry and Chemical Engineering, Southeast University, Nanjing 211189 (China); Du, Hongxiu [School of Chemistry and Chemical Engineering, Southeast University, Nanjing 211189 (China); Suzhou Research Institute of Southeast University, Suzhou 215123 (China)

    2013-12-01

    Highlights: • TiN nanoarray is formed by a nitridation process of TiO{sub 2} in ammonia atmosphere. • TiN nanoarray exhibits much higher EDLC capacitance than TiO{sub 2} nanoarray. • The specific capacitance of TiN nanoarray achieves a high level of 99.7 mF cm{sup −2}. • A flexible solid-state supercapacitor is constructed by TiN nanoarray and PVA gel. -- Abstract: In this study, titanium nitride (TiN) nanoarrays with a short nanotube and long nanopore structure have been prepared by an anodization process of ultra thin titanium foil in ethylene glycol (EG) solution containing ammonium fluoride, subsequent calcination process in an air atmosphere, and final nitridation process in an ammonia atmosphere. The morphology and microstructure characterization has been conducted using field emission scanning electron microscope and X-ray diffraction. The electrochemical properties have been investigated through cyclic voltammetry and electrochemical impedance spectrum measurements. The electrochemical capacitance performance has been investigated by galvanostatic charge–discharge measurements in the acidic, neural and alkali electrolyte solution. Well-defined TiN nanoarrays contribute a much higher capacitance performance than titania (TiO{sub 2}) in the supercapacitor application due to the extraordinarily improved electrical conductivity. Such an electrochemical capacitance can be further enhanced by increasing aspect ratio of TiN nanoarray from short nanotubes to long nanopores. A flexible supercapacitor has been constructed using two symmetrical TiN nanoarray electrodes and a polyvinyl alcohol (PVA) gel electrolyte with H{sub 2}SO{sub 4}–KCl–H{sub 2}O–EG. Such a supercapacitor has a highly improved potential window and still keeps good electrochemical energy storage. TiN nanoarray with a high aspect ratio can act well as an ultra thin film electrode material of flexible supercapacitor to contribute a superior capacitance performance.

  4. Distinguishing bulk traps and interface states in deep-level transient spectroscopy

    International Nuclear Information System (INIS)

    Coelho, A V P; Adam, M C; Boudinov, H

    2011-01-01

    A new method for the distinction of discrete bulk deep levels and interface states related peaks in deep-level transient spectroscopy spectra is proposed. The measurement of two spectra using different reverse voltages while keeping pulse voltage fixed causes different peak maximum shifts in each case: for a reverse voltage modulus increase, a bulk deep-level related peak maximum will remain unchanged or shift towards lower temperatures while only interface states related peak maximum will be able to shift towards higher temperatures. This method has the advantage of being non-destructive and also works in the case of bulk traps with strong emission rate dependence on the electric field. Silicon MOS capacitors and proton implanted GaAs Schottky diodes were employed to experimentally test the method.

  5. Iron and intrinsic deep level states in Ga2O3

    Science.gov (United States)

    Ingebrigtsen, M. E.; Varley, J. B.; Kuznetsov, A. Yu.; Svensson, B. G.; Alfieri, G.; Mihaila, A.; Badstübner, U.; Vines, L.

    2018-01-01

    Using a combination of deep level transient spectroscopy, secondary ion mass spectrometry, proton irradiation, and hybrid functional calculations, we identify two similar deep levels that are associated with Fe impurities and intrinsic defects in bulk crystals and molecular beam epitaxy and hydride vapor phase epitaxi-grown epilayers of β-Ga2O3. First, our results indicate that FeGa, and not an intrinsic defect, acts as the deep acceptor responsible for the often dominating E2 level at ˜0.78 eV below the conduction band minimum. Second, by provoking additional intrinsic defect generation via proton irradiation, we identified the emergence of a new level, labeled as E2*, having the ionization energy very close to that of E2, but exhibiting an order of magnitude larger capture cross section. Importantly, the properties of E2* are found to be consistent with its intrinsic origin. As such, contradictory opinions of a long standing literature debate on either extrinsic or intrinsic origin of the deep acceptor in question converge accounting for possible contributions from E2 and E2* in different experimental conditions.

  6. Efficiency of Capacitively Loaded Converters

    DEFF Research Database (Denmark)

    Andersen, Thomas; Huang, Lina; Andersen, Michael A. E.

    2012-01-01

    This paper explores the characteristic of capacitance versus voltage for dielectric electro active polymer (DEAP) actuator, 2kV polypropylene film capacitor as well as 3kV X7R multi layer ceramic capacitor (MLCC) at the beginning. An energy efficiency for capacitively loaded converters...... is introduced as a definition of efficiency. The calculated and measured efficiency curves for charging DEAP actuator, polypropylene film capacitor and X7R MLCC are provided and compared. The attention has to be paid for the voltage dependent capacitive load, like X7R MLCC, when evaluating the charging...... polypropylene film capacitor can be the equivalent capacitive load. Because of the voltage dependent characteristic, X7R MLCC cannot be used to replace the DEAP actuator. However, this type of capacitor can be used to substitute the capacitive actuator with voltage dependent property at the development phase....

  7. Capacitance of circular patch resonator

    International Nuclear Information System (INIS)

    Miano, G.; Verolino, L.; Naples Univ.; Panariello, G.; Vaccaro, V.G.; Naples Univ.

    1995-11-01

    In this paper the capacitance of the circular microstrip patch resonator is computed. It is shown that the electrostatic problem can be formulated as a system of dual integral equations, and the most interesting techniques of solutions of these systems are reviewed. Some useful approximated formulas for the capacitance are derived and plots of the capacitance are finally given in a wide range of dielectric constants

  8. Intermittent-contact scanning capacitance microscopy imaging and modeling for overlay metrology

    International Nuclear Information System (INIS)

    Mayo, S.; Kopanski, J. J.; Guthrie, W. F.

    1998-01-01

    Overlay measurements of the relative alignment between sequential layers are one of the most critical issues for integrated circuit (IC) lithography. We have implemented on an AFM platform a new intermittent-contact scanning capacitance microscopy (IC-SCM) mode that is sensitive to the tip proximity to an IC interconnect, thus making it possible to image conductive structures buried under planarized dielectric layers. Such measurements can be used to measure IC metal-to-resist lithography overlay. The AFM conductive cantilever probe oscillating in a vertical plane was driven at frequency ω, below resonance. By measuring the tip-to-sample capacitance, the SCM signal is obtained as the difference in capacitance, ΔC(ω), at the amplitude extremes. Imaging of metallization structures was obtained with a bars-in-bars aluminum structure embedded in a planarized dielectric layer 1 μm thick. We have also modeled, with a two-dimensional (2D) electrostatic field simulator, IC-SCM overlay data of a metallization structure buried under a planarized dielectric having a patterned photoresist layer deposited on it. This structure, which simulates the metal-to-resist overlay between sequential IC levels, allows characterization of the technique sensitivity. The capacitance profile across identical size electrically isolated or grounded metal lines embedded in a dielectric was shown to be different. The floating line shows capacitance enhancement at the line edges, with a minimum at the line center. The grounded line shows a single capacitance maximum located at the line center, with no edge enhancement. For identical line dimensions, the capacitance is significantly larger for grounded lines making them easier to image. A nonlinear regression algorithm was developed to extract line center and overlay parameters with approximately 3 nm resolution at the 95% confidence level, showing the potential of this technique for sub-micrometer critical dimension metrology. Symmetric test

  9. First generation of deep n-well CMOS MAPS with in-pixel sparsification for the ILC vertex detector

    International Nuclear Information System (INIS)

    Traversi, Gianluca; Bulgheroni, Antonio; Caccia, Massimo; Jastrzab, Marcin; Manghisoni, Massimo; Pozzati, Enrico; Ratti, Lodovico; Re, Valerio

    2009-01-01

    In this paper we present the characterization results relevant to a deep n-well (DNW) CMOS active pixel sensor chip designed for vertexing applications at the International Linear Collider. In this chip, named sparsified digital readout (SDR0), for the first time we implemented a sparsification logic at the pixel level. The DNW available in deep submicron CMOS processes is used to collect the charge released in the substrate, and signal processing is performed by a classical optimum amplifying stage for capacitive detectors. In this work, the experimental characterization of the SDR0 chip, including data from radioactive source ( 55 Fe) tests, will be presented.

  10. Density Functional Theory Calculations of the Quantum Capacitance of Graphene Oxide as a Supercapacitor Electrode.

    Science.gov (United States)

    Song, Ce; Wang, Jinyan; Meng, Zhaoliang; Hu, Fangyuan; Jian, Xigao

    2018-03-31

    Graphene oxide has become an attractive electrode-material candidate for supercapacitors thanks to its higher specific capacitance compared to graphene. The quantum capacitance makes relative contributions to the specific capacitance, which is considered as the major limitation of graphene electrodes, while the quantum capacitance of graphene oxide is rarely concerned. This study explores the quantum capacitance of graphene oxide, which bears epoxy and hydroxyl groups on its basal plane, by employing density functional theory (DFT) calculations. The results demonstrate that the total density of states near the Fermi level is significantly enhanced by introducing oxygen-containing groups, which is beneficial for the improvement of the quantum capacitance. Moreover, the quantum capacitances of the graphene oxide with different concentrations of these two oxygen-containing groups are compared, revealing that more epoxy and hydroxyl groups result in a higher quantum capacitance. Notably, the hydroxyl concentration has a considerable effect on the capacitive behavior. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. The Design of Phase-Locked-Loop Circuit for Precision Capacitance Micrometer

    Directory of Open Access Journals (Sweden)

    Li Shujie

    2016-01-01

    Full Text Available High precision non-contact micrometer is normally divided into three categories: inductance micrometer, capacitance micrometer and optical interferometer micrometer. The capacitance micrometer is widely used because it has high performance to price ratio. With the improvement of automation level, precision of capacitance micrometer is required higher and higher. Generally, capacitance micrometer consists of the capacitance sensor, capacitance/voltage conversion circuit, and modulation and demodulation circuits. However, due to the existing of resistors, capacitors and other components in the circuit, the phase shift of the carrier signal and the modulated signal might occur. In this case, the specific value of phase shift cannot be determined. Therefore, error caused by the phase shift cannot be eliminated. This will reduce the accuracy of micrometer. In this design, in order to eliminate the impact of the phase shift, the phase-locked-loop (PLL circuit is employed. Through the experiment, the function of tracking the input signal phase and frequency is achieved by the phase-locked-loop circuit. This signal processing method can also be applied to tuber electrical resistance tomography system and other precision measurement circuit.

  12. Highly sensitive micromachined capacitive pressure sensor with reduced hysteresis and low parasitic capacitance

    DEFF Research Database (Denmark)

    Pedersen, Thomas; Fragiacomo, Giulio; Hansen, Ole

    2009-01-01

    This paper describes the design and fabrication of a capacitive pressure sensor that has a large capacitance signal and a high sensitivity of 76 pF/bar in touch mode operation. Due to the large signal, problems with parasitic capacitances are avoided and hence it is possible to integrate the sensor...... bonding to create vacuum cavities. The exposed part of the sensor is perfectly flat such that it can be coated with corrosion resistant thin films. Hysteresis is an inherent problem in touch mode capacitive pressure sensors and a technique to significantly reduce it is presented....... with a discrete components electronics circuit for signal conditioning. Using an AC bridge electronics circuit a resolution of 8 mV/mbar is achieved. The large signal is obtained due to a novel membrane structure utilizing closely packed hexagonal elements. The sensor is fabricated in a process based on fusion...

  13. Capacitive Biosensors and Molecularly Imprinted Electrodes.

    Science.gov (United States)

    Ertürk, Gizem; Mattiasson, Bo

    2017-02-17

    Capacitive biosensors belong to the group of affinity biosensors that operate by registering direct binding between the sensor surface and the target molecule. This type of biosensors measures the changes in dielectric properties and/or thickness of the dielectric layer at the electrolyte/electrode interface. Capacitive biosensors have so far been successfully used for detection of proteins, nucleotides, heavy metals, saccharides, small organic molecules and microbial cells. In recent years, the microcontact imprinting method has been used to create very sensitive and selective biorecognition cavities on surfaces of capacitive electrodes. This chapter summarizes the principle and different applications of capacitive biosensors with an emphasis on microcontact imprinting method with its recent capacitive biosensor applications.

  14. Theory of deep level trap effects on generation-recombination noise in HgCdTe photoconductors

    International Nuclear Information System (INIS)

    Iverson, A.E.; Smith, D.L.

    1985-01-01

    We present a theory of the effect of deep level centers on the generation-recombination (g-r) noise and responsivity of an intrinsic photoconductor. The deep level centers can influence the g-r noise and responsivity in three main ways: (i) they can shorten the bulk carrier lifetime by Shockley--Read--Hall recombination; (ii) for some values of the capture cross sections, deep level densities, and temperature, the deep levels can trap a significant fraction of the photogenerated minority carriers. This trapping reduces the effective minority carrier mobility and diffusivity and thus reduces the effect of carrier sweep out on both g-r noise and responsivity; (iii) the deep level centers add a new thermal noise source, which results from fluctuations between bound and free carriers. The strength of this new noise source decreases with decreasing temperature at a slower rate than band-to-band thermal g-r noise. Calculations have been performed for a X = 0.21, n-type Hg/sub 1-x/Cd/sub x/Te photoconductor using the parameters of a commonly occurring deep level center in this material. We find that for typical operating conditions photoconductive detector performance begins to degrade as the deep level density begins to exceed 10 16 cm -3

  15. A study of ion implanted gallium arsenide using deep level transient spectroscopy

    International Nuclear Information System (INIS)

    Emerson, N.G.

    1981-03-01

    This thesis is concerned with the study of deep energy levels in ion implanted gallium arsenide (GaAs) using deep level transient spectroscopy (D.L.T.S.). The D.L.T.S. technique is used to characterise deep levels in terms of their activation energies and capture cross-sections and to determine their concentration profiles. The main objective is to characterise the effects on deep levels, of ion implantation and the related annealing processes. In the majority of cases assessment is carried out using Schottky barrier diodes. Low doses of selenium ions 1 to 3 x 10 12 cm -2 are implanted into vapour phase epitaxial (V.P.E.) GaAs and the effects of post-implantation thermal and pulsed laser annealing are compared. The process of oxygen implantation with doses in the range 1 x 10 12 to 5 x 10 13 cm -2 followed by thermal annealing at about 750 deg C, introduces a deep level at 0.79 eV from the conduction band. Oxygen implantation, at doses of 5 x 10 13 cm -2 , into V.P.E. GaAs produces a significant increase in the concentration of the A-centre (0.83 eV). High doses of zinc (10 15 cm -2 ) are implanted into n-type V.P.E. GaAs to form shallow p-type layers. The D.L.T.S. system described in the text is used to measure levels in the range 0.16 to 1.1 eV (for GaAs) with a sensitivity of the order 1:10 3 . (U.K.)

  16. Intrinsic Low Hysteresis Touch Mode Capacitive Pressure Sensor

    DEFF Research Database (Denmark)

    Fragiacomo, Giulio; Pedersen, Thomas; Hansen, Ole

    2011-01-01

    Hysteresis has always been one of the main concerns when fabricating touch mode capacitive pressure sensors (TMCPS). This phenomenon can be fought at two different levels: during fabrication or after fabrication with the aid of a dedicated signal conditioning circuit. We will describe...... a microfabrication step that can be introduced in order to reduce drastically the hysteresis of this type of sensors without compromising their sensitivity. Medium-high range (0 to 10 bar absolute pressure) TMCPS with a capacitive signal span of over 100pF and less than 1 % hysteresis in the entire pressure range...

  17. Beating of magnetic oscillations in a graphene device probed by quantum capacitance

    KAUST Repository

    Tahir, M.; Schwingenschlö gl, Udo

    2012-01-01

    We report the quantum capacitance of a monolayergraphene device in an external perpendicular magnetic field including the effects of Rashba spin-orbit interaction(SOI). The SOI mixes the spin up and spin down states of neighbouring Landau levels into two (unequally spaced) energy branches. In order to investigate the role of the SOI for the electronic transport, we study the density of states to probe the quantum capacitance of monolayergraphene.SOIeffects on the quantum magnetic oscillations (Shubnikov de Haas and de Hass-van Alphen) are deduced from the quantum capacitance.

  18. Beating of magnetic oscillations in a graphene device probed by quantum capacitance

    KAUST Repository

    Tahir, M.

    2012-07-05

    We report the quantum capacitance of a monolayergraphene device in an external perpendicular magnetic field including the effects of Rashba spin-orbit interaction(SOI). The SOI mixes the spin up and spin down states of neighbouring Landau levels into two (unequally spaced) energy branches. In order to investigate the role of the SOI for the electronic transport, we study the density of states to probe the quantum capacitance of monolayergraphene.SOIeffects on the quantum magnetic oscillations (Shubnikov de Haas and de Hass-van Alphen) are deduced from the quantum capacitance.

  19. Nanoscale capacitance: A quantum tight-binding model

    Science.gov (United States)

    Zhai, Feng; Wu, Jian; Li, Yang; Lu, Jun-Qiang

    2017-01-01

    Landauer-Buttiker formalism with the assumption of semi-infinite electrodes as reservoirs has been the standard approach in modeling steady electron transport through nanoscale devices. However, modeling dynamic electron transport properties, especially nanoscale capacitance, is a challenging problem because of dynamic contributions from electrodes, which is neglectable in modeling macroscopic capacitance and mesoscopic conductance. We implement a self-consistent quantum tight-binding model to calculate capacitance of a nano-gap system consisting of an electrode capacitance C‧ and an effective capacitance Cd of the middle device. From the calculations on a nano-gap made of carbon nanotube with a buckyball therein, we show that when the electrode length increases, the electrode capacitance C‧ moves up while the effective capacitance Cd converges to a value which is much smaller than the electrode capacitance C‧. Our results reveal the importance of electrodes in modeling nanoscale ac circuits, and indicate that the concepts of semi-infinite electrodes and reservoirs well-accepted in the steady electron transport theory may be not applicable in modeling dynamic transport properties.

  20. Application of positron annihilation lifetime technique to the study of deep level transients in semiconductors

    Science.gov (United States)

    Deng, A. H.; Shan, Y. Y.; Fung, S.; Beling, C. D.

    2002-03-01

    Unlike its conventional applications in lattice defect characterization, positron annihilation lifetime technique was applied to study temperature-dependent deep level transients in semiconductors. Defect levels in the band gap can be determined as they are determined by conventional deep level transient spectroscopy (DLTS) studies. The promising advantage of this application of positron annihilation over the conventional DLTS is that it could further extract extra microstructure information of deep-level defects, such as whether a deep level defect is vacancy related or not. A demonstration of EL2 defect level transient study in GaAs was shown and the EL2 level of 0.82±0.02 eV was obtained by a standard Arrhenius analysis, similar to that in conventional DLTS studies.

  1. Determination of bulk and interface density of states in metal oxide semiconductor thin-film transistors by using capacitance-voltage characteristics

    Science.gov (United States)

    Wei, Xixiong; Deng, Wanling; Fang, Jielin; Ma, Xiaoyu; Huang, Junkai

    2017-10-01

    A physical-based straightforward extraction technique for interface and bulk density of states in metal oxide semiconductor thin film transistors (TFTs) is proposed by using the capacitance-voltage (C-V) characteristics. The interface trap density distribution with energy has been extracted from the analysis of capacitance-voltage characteristics. Using the obtained interface state distribution, the bulk trap density has been determined. With this method, for the interface trap density, it is found that deep state density nearing the mid-gap is approximately constant and tail states density increases exponentially with energy; for the bulk trap density, it is a superposition of exponential deep states and exponential tail states. The validity of the extraction is verified by comparisons with the measured current-voltage (I-V) characteristics and the simulation results by the technology computer-aided design (TCAD) model. This extraction method uses non-numerical iteration which is simple, fast and accurate. Therefore, it is very useful for TFT device characterization.

  2. Deep borehole disposal of high-level radioactive waste.

    Energy Technology Data Exchange (ETDEWEB)

    Stein, Joshua S.; Freeze, Geoffrey A.; Brady, Patrick Vane; Swift, Peter N.; Rechard, Robert Paul; Arnold, Bill Walter; Kanney, Joseph F.; Bauer, Stephen J.

    2009-07-01

    Preliminary evaluation of deep borehole disposal of high-level radioactive waste and spent nuclear fuel indicates the potential for excellent long-term safety performance at costs competitive with mined repositories. Significant fluid flow through basement rock is prevented, in part, by low permeabilities, poorly connected transport pathways, and overburden self-sealing. Deep fluids also resist vertical movement because they are density stratified. Thermal hydrologic calculations estimate the thermal pulse from emplaced waste to be small (less than 20 C at 10 meters from the borehole, for less than a few hundred years), and to result in maximum total vertical fluid movement of {approx}100 m. Reducing conditions will sharply limit solubilities of most dose-critical radionuclides at depth, and high ionic strengths of deep fluids will prevent colloidal transport. For the bounding analysis of this report, waste is envisioned to be emplaced as fuel assemblies stacked inside drill casing that are lowered, and emplaced using off-the-shelf oilfield and geothermal drilling techniques, into the lower 1-2 km portion of a vertical borehole {approx}45 cm in diameter and 3-5 km deep, followed by borehole sealing. Deep borehole disposal of radioactive waste in the United States would require modifications to the Nuclear Waste Policy Act and to applicable regulatory standards for long-term performance set by the US Environmental Protection Agency (40 CFR part 191) and US Nuclear Regulatory Commission (10 CFR part 60). The performance analysis described here is based on the assumption that long-term standards for deep borehole disposal would be identical in the key regards to those prescribed for existing repositories (40 CFR part 197 and 10 CFR part 63).

  3. Sea-level and deep-sea-temperature variability over the past 5.3 million years.

    Science.gov (United States)

    Rohling, E J; Foster, G L; Grant, K M; Marino, G; Roberts, A P; Tamisiea, M E; Williams, F

    2014-04-24

    Ice volume (and hence sea level) and deep-sea temperature are key measures of global climate change. Sea level has been documented using several independent methods over the past 0.5 million years (Myr). Older periods, however, lack such independent validation; all existing records are related to deep-sea oxygen isotope (δ(18)O) data that are influenced by processes unrelated to sea level. For deep-sea temperature, only one continuous high-resolution (Mg/Ca-based) record exists, with related sea-level estimates, spanning the past 1.5 Myr. Here we present a novel sea-level reconstruction, with associated estimates of deep-sea temperature, which independently validates the previous 0-1.5 Myr reconstruction and extends it back to 5.3 Myr ago. We find that deep-sea temperature and sea level generally decreased through time, but distinctly out of synchrony, which is remarkable given the importance of ice-albedo feedbacks on the radiative forcing of climate. In particular, we observe a large temporal offset during the onset of Plio-Pleistocene ice ages, between a marked cooling step at 2.73 Myr ago and the first major glaciation at 2.15 Myr ago. Last, we tentatively infer that ice sheets may have grown largest during glacials with more modest reductions in deep-sea temperature.

  4. Electronic relaxation of deep bulk trap and interface state in ZnO ceramics

    International Nuclear Information System (INIS)

    Yang Yan; Li Sheng-Tao; Ding Can; Cheng Peng-Fei

    2011-01-01

    This paper investigates the electronic relaxation of deep bulk trap and interface state in ZnO ceramics based on dielectric spectra measured in a wide range of temperature, frequency and bias, in addition to the steady state response. It discusses the nature of net current flowing over the barrier affected by interface state, and then obtains temperature-dependent barrier height by approximate calculation from steady I—V (current—voltage) characteristics. Additional conductance and capacitance arising from deep bulk trap relaxation are calculated based on the displacement of the cross point between deep bulk trap and Fermi level under small AC signal. From the resonances due to deep bulk trap relaxation on dielectric spectra, the activation energies are obtained as 0.22 eV and 0.35 eV, which are consistent with the electronic levels of the main defect interstitial Zn and vacancy oxygen in the depletion layer. Under moderate bias, another resonance due to interface relaxation is shown on the dielectric spectra. The DC-like conductance is also observed in high temperature region on dielectric spectra, and the activation energy is much smaller than the barrier height in steady state condition, which is attributed to the displacement current coming from the shallow bulk trap relaxation or other factors. (fluids, plasmas and electric discharges)

  5. Development of Image Reconstruction Algorithms in electrical Capacitance Tomography

    International Nuclear Information System (INIS)

    Fernandez Marron, J. L.; Alberdi Primicia, J.; Barcala Riveira, J. M.

    2007-01-01

    The Electrical Capacitance Tomography (ECT) has not obtained a good development in order to be used at industrial level. That is due first to difficulties in the measurement of very little capacitances (in the range of femto farads) and second to the problem of reconstruction on- line of the images. This problem is due also to the small numbers of electrodes (maximum 16), that made the usual algorithms of reconstruction has many errors. In this work it is described a new purely geometrical method that could be used for this purpose. (Author) 4 refs

  6. Identification of deep levels in GaN associated with dislocations

    International Nuclear Information System (INIS)

    Soh, C B; Chua, S J; Lim, H F; Chi, D Z; Liu, W; Tripathy, S

    2004-01-01

    To establish a correlation between dislocations and deep levels in GaN, a deep-level transient spectroscopy study has been carried out on GaN samples grown by metalorganic chemical vapour deposition. In addition to typical undoped and Si-doped GaN samples, high-quality crack-free undoped GaN film grown intentionally on heavily doped cracked Si-doped GaN and cracked AlGaN templates are also chosen for this study. The purpose of growth of such continuous GaN layers on top of the cracked templates is to reduce the screw dislocation density by an order of magnitude. Deep levels in these layers have been characterized and compared with emphasis on their thermal stabilities and capture kinetics. Three electron traps at E c -E T ∼0.10-0.11, 0.24-0.27 and 0.59-0.63 eV are detected common to all the samples while additional levels at E c -E T ∼0.18 and 0.37-0.40 eV are also observed in the Si-doped GaN. The trap levels exhibit considerably different stabilities under rapid thermal annealing. Based on the observations, the trap levels at E c -E T ∼0.18 and 0.24-0.27 eV can be associated with screw dislocations, whereas the level at E c -E T ∼0.59-0.63 eV can be associated with edge dislocations. This is also in agreement with the transmission electron microscopy measurements conducted on the GaN samples

  7. Carbon flow electrodes for continuous operation of capacitive deionization and capacitive mixing energy generation

    NARCIS (Netherlands)

    Porada, S.; Hamelers, H.V.M.; Bryjak, M.; Presser, V.; Biesheuvel, P.M.; Weingarth, D.

    2014-01-01

    Capacitive technologies, such as capacitive deionization and energy harvesting based on mixing energy (“capmix” and “CO2 energy”), are characterized by intermittent operation: phases of ion electrosorption from the water are followed by system regeneration. From a system application point of view,

  8. Characteristic features of the behaviour of deep centers in especially pure germanium

    International Nuclear Information System (INIS)

    Gloriozova, R.I.; Kolesnik, L.I.

    1993-01-01

    Method of capacitive relaxation spectroscopy was used to study spectrum of deep centers in germanium crystals of p-type conductivity with 10 11 -10 13 cm -3 charge carrier concentration, depending on dislocation density and thermal treatment. Existence of two types of centers with 0.24 and 0.32 eV ionization energies, dictating the maximum near 140 K, was established. Change of deep center concentration with time was revealed

  9. Improved capacitance sensor with variable operating frequency for scanning capacitance microscopy

    International Nuclear Information System (INIS)

    Kwon, Joonhyung; Kim, Joonhui; Jeong, Jong-Hwa; Lee, Euy-Kyu; Seok Kim, Yong; Kang, Chi Jung; Park, Sang-il

    2005-01-01

    Scanning capacitance microscopy (SCM) has been gaining attention for its capability to measure local electrical properties in doping profile, oxide thickness, trapped charges and charge dynamics. In many cases, stray capacitance produced by different samples and measurement conditions affects the resonance frequency of a capacitance sensor. The applications of conventional SCM are critically limited by the fixed operating frequency and lack of tunability in its SCM sensor. In order to widen SCM application to various samples, we have developed a novel SCM sensor with variable operating frequency. By performing variable frequency sweep over the band of 160 MHz, the SCM sensor is tuned to select the best and optimized resonance frequency and quality factor for each sample measurement. The fundamental advantage of the new variable frequency SCM sensor was demonstrated in the SCM imaging of silicon oxide nano-crystals. Typical sensitivity of the variable frequency SCM sensor was found to be 10 -19 F/V

  10. Bevacizumab-Based Chemotherapy Combined with Regional Deep Capacitive Hyperthermia in Metastatic Cancer Patients: A Pilot Study.

    Science.gov (United States)

    Ranieri, Girolamo; Ferrari, Cristina; Di Palo, Alessandra; Marech, Ilaria; Porcelli, Mariangela; Falagario, Gianmarco; Ritrovato, Fabiana; Ramunni, Luigi; Fanelli, Margherita; Rubini, Giuseppe; Gadaleta, Cosmo Damiano

    2017-07-06

    As an angiogenesis inhibitor, bevacizumab has been investigated in combination with different chemotherapeutic agents, achieving an established role for metastatic cancer treatment. However, potential synergic anti-angiogenic effects of hyperthermia have not tested to date in literature. The aim of our study was to analyze efficacy, safety, and survival of anti-angiogenic-based chemotherapy associated to regional deep capacitive hyperthermia (HT) in metastatic cancer patients. Twenty-three patients with metastatic colorectal ( n = 16), ovarian ( n = 5), and breast ( n = 2) cancer were treated with HT in addition to a standard bevacizumab-based chemotherapy regimen. Treatment response assessment was performed, according to the modified Response Evaluation Criteria for Solid Tumors (mRECIST), at 80 days (timepoint-1) and at 160 days (timepoint-2) after therapy. Disease Response Rate (DRR), considered as the proportion of patients who had the best response rating (complete response (CR), partial response (PR), or stable disease (SD)), was assessed at timepoint-1 and timepoint-2. Chi-squared for linear trend test was performed to evaluated the association between response groups (R/NR) and the number of previous treatment (none, 1, 2, 3), number of chemotherapy cycles (12), number of hyperthermia sessions (24), and lines of chemotherapy (I, II). Survival curves were estimated by Kaplan-Meier method. DRR was 85.7% and 72.2% at timepoint-1 and timepoint-2, respectively. HT was well tolerated without additional adverse effects on chemotherapy-related toxicity. Chi-squared for linear trend test demonstrated that the percentage of responders grew in relation to the number of chemotherapy cycles ( p = 0.015) and to number of HT sessions ( p chemotherapy cycles ( p chemotherapy with HT has a favorable tumor response, is feasible and well tolerated, and offers a potentially promising option for metastatic cancer patients.

  11. Convolutional Neural Networks for Text Categorization: Shallow Word-level vs. Deep Character-level

    OpenAIRE

    Johnson, Rie; Zhang, Tong

    2016-01-01

    This paper reports the performances of shallow word-level convolutional neural networks (CNN), our earlier work (2015), on the eight datasets with relatively large training data that were used for testing the very deep character-level CNN in Conneau et al. (2016). Our findings are as follows. The shallow word-level CNNs achieve better error rates than the error rates reported in Conneau et al., though the results should be interpreted with some consideration due to the unique pre-processing o...

  12. Correlation of a generation-recombination center with a deep level trap in GaN

    International Nuclear Information System (INIS)

    Nguyen, X. S.; Lin, K.; Zhang, Z.; Arehart, A. R.; Ringel, S. A.; McSkimming, B.; Speck, J. S.; Fitzgerald, E. A.; Chua, S. J.

    2015-01-01

    We report on the identification of a deep level trap centre which contributes to generation-recombination noise. A n-GaN epilayer, grown by MOCVD on sapphire, was measured by deep level transient spectroscopy (DLTS) and noise spectroscopy. DLTS found 3 well documented deep levels at E c  − 0.26 eV, E c  − 0.59 eV, and E c  − 0.71 eV. The noise spectroscopy identified a generation recombination centre at E c  − 0.65 ± 0.1 eV with a recombination lifetime of 65 μs at 300 K. This level is considered to be the same as the one at E c  − 0.59 eV measured from DLTS, as they have similar trap densities and capture cross section. This result shows that some deep levels contribute to noise generation in GaN materials

  13. In Situ High-Level Nitrogen Doping into Carbon Nanospheres and Boosting of Capacitive Charge Storage in Both Anode and Cathode for a High-Energy 4.5 V Full-Carbon Lithium-Ion Capacitor.

    Science.gov (United States)

    Sun, Fei; Liu, Xiaoyan; Wu, Hao Bin; Wang, Lijie; Gao, Jihui; Li, Hexing; Lu, Yunfeng

    2018-05-02

    To circumvent the imbalances of electrochemical kinetics and capacity between Li + storage anodes and capacitive cathodes for lithium-ion capacitors (LICs), we herein demonstrate an efficient solution by boosting the capacitive charge-storage contributions of carbon electrodes to construct a high-performance LIC. Such a strategy is achieved by the in situ and high-level doping of nitrogen atoms into carbon nanospheres (ANCS), which increases the carbon defects and active sites, inducing more rapidly capacitive charge-storage contributions for both Li + storage anodes and PF 6 - storage cathodes. High-level nitrogen-doping-induced capacitive enhancement is successfully evidenced by the construction of a symmetric supercapacitor using commercial organic electrolytes. Coupling a pre-lithiated ANCS anode with a fresh ANCS cathode enables a full-carbon LIC with a high operating voltage of 4.5 V and high energy and power densities thereof. The assembled LIC device delivers high energy densities of 206.7 and 115.4 Wh kg -1 at power densities of 0.225 and 22.5 kW kg -1 , respectively, as well as an unprecedented high-power cycling stability with only 0.0013% capacitance decay per cycle within 10 000 cycles at a high power output of 9 kW kg -1 .

  14. Implications of vegetation hydraulic capacitance as an indicator of water stress and drought recovery

    Science.gov (United States)

    Matheny, A. M.; Bohrer, G.

    2017-12-01

    Above-ground water storage in vegetation plays an integral role in the avoidance of hydraulic impairment to transpiration. New high temporal resolution measurements of dynamic changes in tree hydraulic capacitance are facilitating insights into vegetation water use strategies. Diurnal withdrawal from water storage in leaves, branches, stems, and roots significantly impacts sap flow, stomatal conductance, and transpiration. The ability to store and use water varies based on soil- and root-water availability, tree size, wood vessel anatomy and density, and stomatal response strategy (i.e. isohydricity). We present results from a three-year long study of stem capacitance dynamics in five species in a mixed deciduous forest in Michigan. The site receives 800mm of rainfall annually, but water potential in the well-drained sandy soil nears the permanent wilting point several times annually. We demonstrate radical differences in stored water use between drought tolerant and intolerant species. Red maple, a drought intolerant, isohydric species, showed a strong dependence on stem capacitance for transpiration during both wet and dry periods. Red oak, a more drought hearty, deep rooted, anisohydric species, was much less reliant on withdrawal from water storage during all conditions. During well-watered conditions, withdrawal from storage by red maple was 10 kg day-1, yet storage withdrawal from similarly sized red oaks was 1 kg day-1. Red oaks only drew strongly upon stored water during the driest extremes. Metrics of hydration status derived from capacitance provide a means to explore drought response and recovery. Declines in consecutive days' maximum capacitance indicate an inability to restore lost water and can be used to mark the onset of water stress. Drought recovery can be quantified as the time required for stem water content to return to pre-drought volumes. Capacitance withdrawal and depletion exhibit a clear threshold response to declining soil water

  15. Online monitoring of oil film using electrical capacitance tomography and level set method

    International Nuclear Information System (INIS)

    Xue, Q.; Ma, M.; Sun, B. Y.; Cui, Z. Q.; Wang, H. X.

    2015-01-01

    In the application of oil-air lubrication system, electrical capacitance tomography (ECT) provides a promising way for monitoring oil film in the pipelines by reconstructing cross sectional oil distributions in real time. While in the case of small diameter pipe and thin oil film, the thickness of the oil film is hard to be observed visually since the interface of oil and air is not obvious in the reconstructed images. And the existence of artifacts in the reconstructions has seriously influenced the effectiveness of image segmentation techniques such as level set method. Besides, level set method is also unavailable for online monitoring due to its low computation speed. To address these problems, a modified level set method is developed: a distance regularized level set evolution formulation is extended to image two-phase flow online using an ECT system, a narrowband image filter is defined to eliminate the influence of artifacts, and considering the continuity of the oil distribution variation, the detected oil-air interface of a former image can be used as the initial contour for the detection of the subsequent frame; thus, the propagation from the initial contour to the boundary can be greatly accelerated, making it possible for real time tracking. To testify the feasibility of the proposed method, an oil-air lubrication facility with 4 mm inner diameter pipe is measured in normal operation using an 8-electrode ECT system. Both simulation and experiment results indicate that the modified level set method is capable of visualizing the oil-air interface accurately online

  16. Preliminary analyses of the deep geoenvironmental characteristics for the deep borehole disposal of high-level radioactive waste in Korea

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Jong Youl; Lee, Min Soo; Choi, Heui Joo; Kim, Geon Young; Kim, Kyung Su [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2016-06-15

    Spent fuels from nuclear power plants, as well as high-level radioactive waste from the recycling of spent fuels, should be safely isolated from human environment for an extremely long time. Recently, meaningful studies on the development of deep borehole radioactive waste disposal system in 3-5 km depth have been carried out in USA and some countries in Europe, due to great advance in deep borehole drilling technology. In this paper, domestic deep geoenvironmental characteristics are preliminarily investigated to analyze the applicability of deep borehole disposal technology in Korea. To do this, state-of-the art technologies in USA and some countries in Europe are reviewed, and geological and geothermal data from the deep boreholes for geothermal usage are analyzed. Based on the results on the crystalline rock depth, the geothermal gradient and the spent fuel types generated in Korea, a preliminary deep borehole concept including disposal canister and sealing system, is suggested.

  17. Preliminary analyses of the deep geoenvironmental characteristics for the deep borehole disposal of high-level radioactive waste in Korea

    International Nuclear Information System (INIS)

    Lee, Jong Youl; Lee, Min Soo; Choi, Heui Joo; Kim, Geon Young; Kim, Kyung Su

    2016-01-01

    Spent fuels from nuclear power plants, as well as high-level radioactive waste from the recycling of spent fuels, should be safely isolated from human environment for an extremely long time. Recently, meaningful studies on the development of deep borehole radioactive waste disposal system in 3-5 km depth have been carried out in USA and some countries in Europe, due to great advance in deep borehole drilling technology. In this paper, domestic deep geoenvironmental characteristics are preliminarily investigated to analyze the applicability of deep borehole disposal technology in Korea. To do this, state-of-the art technologies in USA and some countries in Europe are reviewed, and geological and geothermal data from the deep boreholes for geothermal usage are analyzed. Based on the results on the crystalline rock depth, the geothermal gradient and the spent fuel types generated in Korea, a preliminary deep borehole concept including disposal canister and sealing system, is suggested

  18. Circuit and Measurement Technique for Radiation Induced Drift in Precision Capacitance Matching

    Science.gov (United States)

    Prasad, Sudheer; Shankar, Krishnamurthy Ganapathy

    2013-04-01

    In the design of radiation tolerant precision ADCs targeted for space market, a matched capacitor array is crucial. The drift of capacitance ratios due to radiation should be small enough not to cause linearity errors. Conventional methods for measuring capacitor matching may not achieve the desired level of accuracy due to radiation induced gain errors in the measurement circuits. In this work, we present a circuit and method for measuring capacitance ratio drift to a very high accuracy (<; 1 ppm) unaffected by radiation levels up to 150 krad.

  19. Electric double-layer capacitance between an ionic liquid and few-layer graphene.

    Science.gov (United States)

    Uesugi, Eri; Goto, Hidenori; Eguchi, Ritsuko; Fujiwara, Akihiko; Kubozono, Yoshihiro

    2013-01-01

    Ionic-liquid gates have a high carrier density due to their atomically thin electric double layer (EDL) and extremely large geometrical capacitance Cg. However, a high carrier density in graphene has not been achieved even with ionic-liquid gates because the EDL capacitance CEDL between the ionic liquid and graphene involves the series connection of Cg and the quantum capacitance Cq, which is proportional to the density of states. We investigated the variables that determine CEDL at the molecular level by varying the number of graphene layers n and thereby optimising Cq. The CEDL value is governed by Cq at n 4. This transition with n indicates a composite nature for CEDL. Our finding clarifies a universal principle that determines capacitance on a microscopic scale, and provides nanotechnological perspectives on charge accumulation and energy storage using an ultimately thin capacitor.

  20. Characterization of irradiation induced deep and shallow impurities

    Science.gov (United States)

    Treberspurg, Wolfgang; Bergauer, Thomas; Dragicevic, Marko; Krammer, Manfred; Valentan, Manfred

    2013-12-01

    Silicon Detectors close to the interaction point of the High Luminosity Large Hardron Collider (HL-LHC) have to withstand a harsh irradiation environment. In order to evaluate the behaviour of shallow and deep defects, induced by neutron irradiation, spreading resistance resistivity measurements and capacitance voltage measurements have been performed. These measurements, deliver information about the profile of shallow impurities after irradiation as well as indications of deep defects in the Space Charge Region (SCR) and the Electrical Neutral Bulk (ENB). By considering the theoretical background of the measurement both kinds of defects can be investigated independently from each other.

  1. Characterization of irradiation induced deep and shallow impurities

    Energy Technology Data Exchange (ETDEWEB)

    Treberspurg, Wolfgang, E-mail: wolfgang.treberspurg@oeaw.ac.at; Bergauer, Thomas; Dragicevic, Marko; Krammer, Manfred; Valentan, Manfred

    2013-12-21

    Silicon Detectors close to the interaction point of the High Luminosity Large Hardron Collider (HL-LHC) have to withstand a harsh irradiation environment. In order to evaluate the behaviour of shallow and deep defects, induced by neutron irradiation, spreading resistance resistivity measurements and capacitance voltage measurements have been performed. These measurements, deliver information about the profile of shallow impurities after irradiation as well as indications of deep defects in the Space Charge Region (SCR) and the Electrical Neutral Bulk (ENB). By considering the theoretical background of the measurement both kinds of defects can be investigated independently from each other.

  2. Characterization of irradiation induced deep and shallow impurities

    International Nuclear Information System (INIS)

    Treberspurg, Wolfgang; Bergauer, Thomas; Dragicevic, Marko; Krammer, Manfred; Valentan, Manfred

    2013-01-01

    Silicon Detectors close to the interaction point of the High Luminosity Large Hardron Collider (HL-LHC) have to withstand a harsh irradiation environment. In order to evaluate the behaviour of shallow and deep defects, induced by neutron irradiation, spreading resistance resistivity measurements and capacitance voltage measurements have been performed. These measurements, deliver information about the profile of shallow impurities after irradiation as well as indications of deep defects in the Space Charge Region (SCR) and the Electrical Neutral Bulk (ENB). By considering the theoretical background of the measurement both kinds of defects can be investigated independently from each other

  3. Scanning ion deep level transient spectroscopy: I. Theory

    International Nuclear Information System (INIS)

    Laird, J S; Jagadish, C; Jamieson, D N; Legge, G J F

    2006-01-01

    Theoretical aspects of a new technique for the MeV ion microbeam are described in detail for the first time. The basis of the technique, termed scanning ion deep level transient spectroscopy (SIDLTS), is the imaging of defect distributions within semiconductor devices. The principles of SIDLTS are similar to those behind other deep level transient spectroscopy (DLTS) techniques with the main difference stemming from the injection of carriers into traps using the localized energy-loss of a focused MeV ion beam. Energy-loss of an MeV ion generates an electron-hole pair plasma, providing the equivalent of a DLTS trap filling pulse with a duration which depends on space-charge screening of the applied electric field and ambipolar erosion of the plasma for short ranging ions. Some nanoseconds later, the detrapping current transient is monitored as a charge transient. Scanning the beam in conjunction with transient analysis allows the imaging of defect levels. As with DLTS, the temperature dependence of the transient can be used to extract trap activation levels. In this, the first of a two-part paper, we introduce the various stages of corner capture and derive a simple expression for the observed charge transient. The second paper will illustrate the technique on a MeV ion implanted Au-Si Schottky junction

  4. The compressibility and the capacitance coefficient of helium-oxygen atmospheres.

    Science.gov (United States)

    Imbert, G; Dejours, P; Hildwein, G

    1982-12-01

    The capacitance coefficient beta of an ideal gas mixture depends only on its temperature T, and its value is derived from the ideal gas law (i.e., beta = 1/RT, R being the ideal gas constant). But real gases behave as ideal gases only at low pressures, and this would not be the case in deep diving. High pressures of helium-oxygen are used in human and animal experimental dives (up to 7 or 12 MPa or more, respectively). At such pressures deviations from the ideal gas law cannot be neglected in hyperbaric atmospheres with respect to current accuracy of measuring instruments. As shown both theoretically and experimentally by this study, the non-ideal nature of helium-oxygen has a significant effect on the capacitance coefficient of hyperbaric atmospheres. The theoretical study is based on interaction energy in either homogeneous (He-He and O2-O2) or heterogeneous (He-O2) molecular pairs, and on the virial equation of state for gas mixtures. The experimental study is based on weight determination of samples of known volume of binary helium-oxygen mixtures, which are prepared in well-controlled pressure and temperature conditions. Our experimental results are in good agreement with theoretical predictions. 1) The helium compressibility factor ZHe increases linearly with pressure [ZHe = 1 + 0.0045 P (in MPa) at 30 degrees C]; and 2) in same temperature and pressure conditions (T = 303 K and P = 0.1 to 15 MPa), the same value for Z is valid for a helium-oxygen binary mixture and for pure helium. As derived from the equation of state of real gases, the capacitance coefficient is inversely related to Z (beta = 1/ZRT); therefore, for helium-oxygen mixtures, this coefficient would decrease with increasing pressure. A table is given for theoretical values of helium-oxygen capacitance coefficient, at pressures ranging from 0.1 to 15.0 MPa and at temperatures ranging from 25 degrees C to 37 degrees C.

  5. Setup for in situ deep level transient spectroscopy of semiconductors during swift heavy ion irradiation.

    Science.gov (United States)

    Kumar, Sandeep; Kumar, Sugam; Katharria, Y S; Safvan, C P; Kanjilal, D

    2008-05-01

    A computerized system for in situ deep level characterization during irradiation in semiconductors has been set up and tested in the beam line for materials science studies of the 15 MV Pelletron accelerator at the Inter-University Accelerator Centre, New Delhi. This is a new facility for in situ irradiation-induced deep level studies, available in the beam line of an accelerator laboratory. It is based on the well-known deep level transient spectroscopy (DLTS) technique. High versatility for data manipulation is achieved through multifunction data acquisition card and LABVIEW. In situ DLTS studies of deep levels produced by impact of 100 MeV Si ions on Aun-Si(100) Schottky barrier diode are presented to illustrate performance of the automated DLTS facility in the beam line.

  6. Deep Inelastic Scattering at the Amplitude Level

    International Nuclear Information System (INIS)

    Brodsky, Stanley J.

    2005-01-01

    The deep inelastic lepton scattering and deeply virtual Compton scattering cross sections can be interpreted in terms of the fundamental wavefunctions defined by the light-front Fock expansion, thus allowing tests of QCD at the amplitude level. The AdS/CFT correspondence between gauge theory and string theory provides remarkable new insights into QCD, including a model for hadronic wavefunctions which display conformal scaling at short distances and color confinement at large distances

  7. Impact of deep levels on the electrical conductivity and luminescence of gallium nitride codoped with carbon and silicon

    International Nuclear Information System (INIS)

    Armstrong, A.; Arehart, A.R.; Green, D.; Mishra, U.K.; Speck, J.S.; Ringel, S.A.

    2005-01-01

    The impact of C incorporation on the deep level spectrum of n-type and semi-insulating GaN:C:Si films grown by rf plasma-assisted molecular-beam epitaxy (MBE) was investigated by the combination of deep level transient spectroscopy, steady-state photocapacitance, and transient deep level optical spectroscopy. The deep level spectra of the GaN:C:Si samples exhibited several band-gap states. A monotonic relation between systematic doping with C and quantitative trap concentration revealed C-related deep levels. A deep acceptor at E c -2.05 eV and a deep donor at E c -0.11 eV are newly reported states, and the latter is the first directly observed deep level attributed to the C Ga defect. A configuration-coordinate model involving localized lattice distortion revealed strong evidence that C-related deep levels at E c -3.0 eV and E ν +0.9 eV are likely identical and associated with the yellow luminescence in C-doped GaN films. Of the deep levels whose trap concentration increase with C doping, the band-gap states at E c -3.0 and 3.28 eV had the largest concentration, implying that free-carrier compensation by these deep levels is responsible for the semi-insulating behavior of GaN:C:Si films grown by MBE. The differing manner by which C incorporation in GaN may impact electrical conductivity in films grown by MBE and metal-organic chemical-vapor deposition is discussed

  8. Decrease in the cytosolic NADP+-dependent isocitrate dehydrogenase activity through porcine sperm capacitation.

    Science.gov (United States)

    Katoh, Yuki; Tamba, Michiko; Matsuda, Manabu; Kikuchi, Kazuhiro; Okamura, Naomichi

    2018-02-26

    In order to understand the molecular mechanisms involved in the sperm capacitation, we have identified the proteins tyrosine-phosphorylated during the capacitation especially in conjunction with the regulation of the levels of reactive oxygen species (ROS) in sperm. In the present study, the effects of the tyrosine phosphorylation of cytosolic NADP + -dependent isocitrate dehydrogenase (IDPc) on its catalytic activity and on the levels of ROS in sperm have been studied. The tyrosine phosphorylated IDPc showed a significantly lowered enzymatic activity. The immunocytochemical analyses using the highly specific antisera against IDPc revealed that IDPc was mainly localized to the principal piece of the porcine sperm flagellum. As IDPc is one of the major NADPH regenerating enzymes in porcine sperm, it is strongly suggested that the decrease in IDPc activity is involved in the increased levels of ROS, which results in the induction of hyperactivated flagellar movement and capacitation. Copyright © 2018 Elsevier Inc. All rights reserved.

  9. The Capacitive Magnetic Field Sensor

    Science.gov (United States)

    Zyatkov, D. O.; Yurchenko, A. V.; Balashov, V. B.; Yurchenko, V. I.

    2016-01-01

    The results of a study of sensitive element magnetic field sensor are represented in this paper. The sensor is based on the change of the capacitance with an active dielectric (ferrofluid) due to the magnitude of magnetic field. To prepare the ferrofluid magnetic particles are used, which have a followingdispersion equal to 50 brand 5BDSR. The dependence of the sensitivity of the capacitive element from the ferrofluid with different dispersion of magnetic particles is considered. The threshold of sensitivity and sensitivity of a measuring cell with ferrofluid by a magnetic field was determined. The experimental graphs of capacitance change of the magnitude of magnetic field are presented.

  10. Virtual electrical capacitance tomography sensor

    International Nuclear Information System (INIS)

    Li, Y; Yang, W Q

    2005-01-01

    Electrical capacitance tomography (ECT) is an effective technique for elucidating the distribution of dielectric materials inside closed pipes or vessels. This paper describes a virtual electrical capacitance tomography (VECT) system, which can simulate a range of sensor and hardware configurations and material distributions. A selection of popular image reconstruction algorithms has been made available and image error and capacitance error tools enable their performance to be evaluated and compared. Series of frame-by-frame results can be stored for simulating real-time dynamic flows. The system is programmed in Matlab with DOS functions. It is convenient to use and low-cost to operate, providing an effective tool for engineering experiment

  11. Flexible PVDF ferroelectric capacitive temperature sensor

    KAUST Repository

    Khan, Naveed

    2015-08-02

    In this paper, a capacitive temperature sensor based on polyvinylidene fluoride (PVDF) capacitor is explored. The PVDF capacitor is characterized below its Curie temperature. The capacitance of the PVDF capacitor changes vs temperature with a sensitivity of 16pF/°C. The linearity measurement of the capacitance-temperature relation shows less than 0.7°C error from a best fit straight line. An LC oscillator based temperature sensor is demonstrated based on this capacitor.

  12. Bivariate quadratic method in quantifying the differential capacitance and energy capacity of supercapacitors under high current operation

    Science.gov (United States)

    Goh, Chin-Teng; Cruden, Andrew

    2014-11-01

    Capacitance and resistance are the fundamental electrical parameters used to evaluate the electrical characteristics of a supercapacitor, namely the dynamic voltage response, energy capacity, state of charge and health condition. In the British Standards EN62391 and EN62576, the constant capacitance method can be further improved with a differential capacitance that more accurately describes the dynamic voltage response of supercapacitors. This paper presents a novel bivariate quadratic based method to model the dynamic voltage response of supercapacitors under high current charge-discharge cycling, and to enable the derivation of the differential capacitance and energy capacity directly from terminal measurements, i.e. voltage and current, rather than from multiple pulsed-current or excitation signal tests across different bias levels. The estimation results the author achieves are in close agreement with experimental measurements, within a relative error of 0.2%, at various high current levels (25-200 A), more accurate than the constant capacitance method (4-7%). The archival value of this paper is the introduction of an improved quantification method for the electrical characteristics of supercapacitors, and the disclosure of the distinct properties of supercapacitors: the nonlinear capacitance-voltage characteristic, capacitance variation between charging and discharging, and distribution of energy capacity across the operating voltage window.

  13. Luminescence and deep-level transient spectroscopy of grown dislocation-rich Si layers

    Directory of Open Access Journals (Sweden)

    I. I. Kurkina

    2012-09-01

    Full Text Available The charge deep-level transient spectroscopy (Q-DLTS is applied to the study of the dislocation-rich Si layers grown on a surface composed of dense arrays of Ge islands prepared on the oxidized Si surface. This provides revealing three deep-level bands located at EV + 0.31 eV, EC – 0.35 eV and EC – 0.43 eV using the stripe-shaped p-i-n diodes fabricated on the basis of these layers. The most interesting observation is the local state recharging process which proceeds with low activation energy (∼50 meV or without activation. The recharging may occur by carrier tunneling within deep-level bands owing to the high dislocation density ∼ 1011 - 1012 cm-2. This result is in favor of the suggestion on the presence of carrier transport between the deep states, which was previously derived from the excitation dependence of photoluminescence (PL intensity. Electroluminescence (EL spectra measured from the stripe edge of the same diodes contain two peaks centered near 1.32 and 1.55 μm. Comparison with PL spectra indicates that the EL peaks are generated from arsenic-contaminated and pure areas of the layers, respectively.

  14. Reduced impact of induced gate noise on inductively degenerated LNAs in deep submicron CMOS technologies

    DEFF Research Database (Denmark)

    Rossi, P.; Svelto, F.; Mazzanti, A.

    2005-01-01

    Designers of radio-frequency inductively-degenerated CMOS low-noise-amplifiers have usually not followed the guidelines for achieving minimum noise figure. Nonetheless, state-of-the- art implementations display noise figure values very close to the theoretical minimum. In this paper, we point out...... that this is due to the effect of the parasitic overlap capacitances in the MOS device. In particular, we show that overlap capacitances lead to a significant induced-gate-noise reduction, especially when deep sub-micron CMOS processes are used....

  15. Spectroscopy of deep doping levels in Cd0.99Mn0.01Te:Ga

    International Nuclear Information System (INIS)

    Szatkowski, J.; Placzek-Popko, E.; Sieranski, K.; Bieg, B.

    1997-01-01

    The investigation results of deep energy levels in Cd 0.99 Mn 0.01 Te (n-type) doped with gallium have been presented. Deep level transient spectroscopy (DLTS) measurements have been carried out in temperature range 80-420 K. The results show five types of electron traps. The activation energy of trapping levels and electron trapping cross-sections have been determined for observed traps. 2 refs, 3 figs, 1 tab

  16. Deep levels in p-type InGaAsN lattice matched to GaAs

    International Nuclear Information System (INIS)

    Kwon, D.; Kaplar, R.J.; Ringel, S.A.; Allerman, A.A.; Kurtz, S.R.; Jones, E.D.

    1999-01-01

    Deep-level transient spectroscopy measurements were utilized to investigate deep-level defects in metal - organic chemical vapor deposition-grown, unintentionally doped p-type InGaAsN films lattice matched to GaAs. The as-grown material displayed a high concentration of deep levels distributed within the band gap, with a dominant hole trap at E v +0.10eV. Postgrowth annealing simplified the deep-level spectra, enabling the identification of three distinct hole traps at 0.10, 0.23, and 0.48 eV above the valence-band edge, with concentrations of 3.5x10 14 , 3.8x10 14 , and 8.2x10 14 cm -3 , respectively. A direct comparison between the as-grown and annealed spectra revealed the presence of an additional midgap hole trap, with a concentration of 4x10 14 cm -3 in the as-grown material. The concentration of this trap is sharply reduced by annealing, which correlates with improved material quality and minority-carrier properties after annealing. Of the four hole traps detected, only the 0.48 eV level is not influenced by annealing, suggesting this level may be important for processed InGaAsN devices in the future. copyright 1999 American Institute of Physics

  17. Hydrogen effects on deep level defects in proton implanted Cu(In,Ga)Se{sub 2} based thin films

    Energy Technology Data Exchange (ETDEWEB)

    Lee, D.W.; Seol, M.S.; Kwak, D.W.; Oh, J.S. [Department of Physics, Dongguk University, Seoul 100-715 (Korea, Republic of); Jeong, J.H. [Photo-electronic Hybrids Research Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Cho, H.Y., E-mail: hycho@dongguk.edu [Department of Physics, Dongguk University, Seoul 100-715 (Korea, Republic of)

    2012-08-01

    Hydrogen effects on deep level defects and a defect generation in proton implanted Cu(In,Ga)Se{sub 2} (CIGS) based thin films for solar cell were investigated. CIGS films with a thickness of 3 {mu}m were grown on a soda-lime glass substrate by a co-evaporation method, and then were implanted with protons. To study deep level defects in the proton implanted CIGS films, deep level transient spectroscopy measurements on the CIGS-based solar cells were carried out, these measurements found 6 traps (including 3 hole traps and 3 electron traps). In the proton implanted CIGS films, the deep level defects, which are attributed to the recombination centers of the CIGS solar cell, were significantly reduced in intensity, while a deep level defect was generated around 0.28 eV above the valence band maximum. Therefore, we suggest that most deep level defects in CIGS films can be controlled by hydrogen effects. - Highlights: Black-Right-Pointing-Pointer Proton implanted Cu(In,Ga)Se{sub 2} thin film and solar cell are prepared. Black-Right-Pointing-Pointer Deep level defects of Cu(In,Ga)Se{sub 2} thin film and solar cell are investigated. Black-Right-Pointing-Pointer Hydrogenation using proton implantation and H{sub 2} annealing reduces deep level defects. Black-Right-Pointing-Pointer Hydrogenation could enhance electrical properties and efficiency of solar cells.

  18. Calculation of secondary capacitance of compact Tesla pulse transformer

    International Nuclear Information System (INIS)

    Yu Binxiong; Liu Jinliang

    2013-01-01

    An analytic expression of the secondary capacitance of a compact Tesla pulse transformer is derived. Calculated result by the expression shows that two parts contribute to the secondary capacitance, namely the capacitance between inner and outer magnetic cores and the attached capacitance caused by the secondary winding. The attached capacitance equals to the capacitance of a coaxial line which is as long as the secondary coil, and whose outer and inner diameters are as large as the inner diameter of the outer magnetic and the outer diameter of the inner magnetic core respectively. A circuital model for analyzing compact Tesla transformer is built, and numeric calculation shows that the expression of the secondary capacitance is correct. Besides, a small compact Tesla transformer is developed, and related test is carried out. Test result confirms the calculated results by the expression derived. (authors)

  19. Quantum capacitance of the armchair-edge graphene nanoribbon

    Indian Academy of Sciences (India)

    Home; Journals; Pramana – Journal of Physics; Volume 81; Issue 2. Quantum capacitance of the ... Abstract. The quantum capacitance, an important parameter in the design of nanoscale devices, is derived for armchair-edge single-layer graphene nanoribbon with semiconducting property. The quantum capacitance ...

  20. Current and capacitance measurements as a fast diagnostic tool for evaluation of semiconductor parameters

    CERN Document Server

    Kemmer, J; Krause, N; Krieglmeyer, C; Yang Yi

    2000-01-01

    A fast qualitative method is described for evaluation of semiconductor parameters by analyzing both the capacitance/voltage (C/V) and current/voltage (I/V) characteristics of pn- or Schottky-diodes, which are fabricated on the material under investigation. The method is applied for measurement of recombination and generation lifetimes of minority charge carriers and for determination of doping profiles and distribution of active generation/recombination (G/R) centers after irradiation with Am-alpha particles and deep phosphorus implantation. Measurements on epitaxial silicon result in doping profiles and distributions of active impurities within the epi-layer.

  1. Resistive and Capacitive Based Sensing Technologies

    Directory of Open Access Journals (Sweden)

    Winncy Y. Du

    2008-04-01

    Full Text Available Resistive and capacitive (RC sensors are the most commonly used sensors. Their applications span homeland security, industry, environment, space, traffic control, home automation, aviation, and medicine. More than 30% of modern sensors are direct or indirect applications of the RC sensing principles. This paper reviews resistive and capacitive sensing technologies. The physical principles of resistive sensors are governed by several important laws and phenomena such as Ohm’s Law, Wiedemann-Franz Law; Photoconductive-, Piezoresistive-, and Thermoresistive Effects. The applications of these principles are presented through a variety of examples including accelerometers, flame detectors, pressure/flow rate sensors, RTDs, hygristors, chemiresistors, and bio-impedance sensors. The capacitive sensors are described through their three configurations: parallel (flat, cylindrical (coaxial, and spherical (concentric. Each configuration is discussed with respect to its geometric structure, function, and application in various sensor designs. Capacitance sensor arrays are also presented in the paper.

  2. Capacitance of carbon-based electrical double-layer capacitors.

    Science.gov (United States)

    Ji, Hengxing; Zhao, Xin; Qiao, Zhenhua; Jung, Jeil; Zhu, Yanwu; Lu, Yalin; Zhang, Li Li; MacDonald, Allan H; Ruoff, Rodney S

    2014-01-01

    Experimental electrical double-layer capacitances of porous carbon electrodes fall below ideal values, thus limiting the practical energy densities of carbon-based electrical double-layer capacitors. Here we investigate the origin of this behaviour by measuring the electrical double-layer capacitance in one to five-layer graphene. We find that the capacitances are suppressed near neutrality, and are anomalously enhanced for thicknesses below a few layers. We attribute the first effect to quantum capacitance effects near the point of zero charge, and the second to correlations between electrons in the graphene sheet and ions in the electrolyte. The large capacitance values imply gravimetric energy storage densities in the single-layer graphene limit that are comparable to those of batteries. We anticipate that these results shed light on developing new theoretical models in understanding the electrical double-layer capacitance of carbon electrodes, and on opening up new strategies for improving the energy density of carbon-based capacitors.

  3. Influence of growth temperature and temperature ramps on deep level defect incorporation in m-plane GaN

    International Nuclear Information System (INIS)

    Armstrong, A. M.; Kelchner, K.; Nakamura, S.; DenBaars, S. P.; Speck, J. S.

    2013-01-01

    The dependence of deep level defect incorporation in m-plane GaN films grown by metal-organic chemical vapor deposition on bulk m-plane GaN substrates as a function of growth temperature (T g ) and T g ramping method was investigated using deep level optical spectroscopy. Understanding the influence of T g on GaN deep level incorporation is important for InGaN/GaN multi-quantum well (MQW) light emitting diodes (LEDs) and laser diodes (LDs) because GaN quantum barrier (QB) layers are grown much colder than thin film GaN to accommodate InGaN QW growth. Deep level spectra of low T g (800 °C) GaN films grown under QB conditions were compared to deep level spectra of high T g (1150 °C) GaN. Reducing T g , increased the defect density significantly (>50×) through introduction of emergent deep level defects at 2.09 eV and 2.9 eV below the conduction band minimum. However, optimizing growth conditions during the temperature ramp when transitioning from high to low T g substantially reduced the density of these emergent deep levels by approximately 40%. The results suggest that it is important to consider the potential for non-radiative recombination in QBs of LED or LD active regions, and tailoring the transition from high T g GaN growth to active layer growth can mitigate such non-radiative channels

  4. Novel RF-MEMS capacitive switching structures

    NARCIS (Netherlands)

    Rottenberg, X.; Jansen, Henricus V.; Fiorini, P.; De Raedt, W.; Tilmans, H.A.C.

    2002-01-01

    This paper reports on novel RF-MEMS capacitive switching devices implementing an electrically floating metal layer covering the dielectric to ensure intimate contact with the bridge in the down state. This results in an optimal switch down capacitance and allows optimisation of the down/up

  5. The Pyramidal Capacitated Vehicle Routing Problem

    DEFF Research Database (Denmark)

    Lysgaard, Jens

    This paper introduces the Pyramidal Capacitated Vehicle Routing Problem (PCVRP) as a restricted version of the Capacitated Vehicle Routing Problem (CVRP). In the PCVRP each route is required to be pyramidal in a sense generalized from the Pyramidal Traveling Salesman Problem (PTSP). A pyramidal...

  6. The pyramidal capacitated vehicle routing problem

    DEFF Research Database (Denmark)

    Lysgaard, Jens

    2010-01-01

    This paper introduces the pyramidal capacitated vehicle routing problem (PCVRP) as a restricted version of the capacitated vehicle routing problem (CVRP). In the PCVRP each route is required to be pyramidal in a sense generalized from the pyramidal traveling salesman problem (PTSP). A pyramidal...

  7. Large lattice relaxation deep levels in neutron-irradiated GaN

    International Nuclear Information System (INIS)

    Li, S.; Zhang, J.D.; Beling, C.D.; Wang, K.; Wang, R.X.; Gong, M.; Sarkar, C.K.

    2005-01-01

    Deep level transient spectroscopy (DLTS) and deep level optical spectroscopy (DLOS) measurements have been carried out in neutron-irradiated n-type hydride-vapor-phase-epitaxy-grown GaN. A defect center characterized by a DLTS line, labeled as N1, is observed at E C -E T =0.17 eV. Another line, labeled as N2, at E C -E T =0.23 eV, seems to be induced at the same rate as N1 under irradiation and may be identified with E1. Other defects native to wurtzite GaN such as the C and E2 lines appear to enhance under neutron irradiation. The DLOS results show that the defects N1 and N2 have large Frank-Condon shifts of 0.64 and 0.67 eV, respectively, and hence large lattice relaxations. The as-grown and neutron-irradiated samples all exhibit the persistent photoconductivity effect commonly seen in GaN that may be attributed to DX centers. The concentration of the DX centers increases significantly with neutron dosage and is helpful in sustaining sample conductivity at low temperatures, thus making possible DLTS measurements on N1 an N2 in the radiation-induced deep-donor defect compensated material which otherwise are prevented by carrier freeze-out

  8. Scanning Capacitance Microscopy | Materials Science | NREL

    Science.gov (United States)

    obtained using scanning capacitance microscopy. Top Right: Image of p-type and n-type material, obtained 'fingers' of light-colored n-type material on a yellow and blue background representing p-type material material, obtained using scanning capacitance microscopy, in a sample semiconductor device; the image shows

  9. Adding Resistances and Capacitances in Introductory Electricity

    Science.gov (United States)

    Efthimiou, C. J.; Llewellyn, R. A.

    2005-09-01

    All introductory physics textbooks, with or without calculus, cover the addition of both resistances and capacitances in series and in parallel as discrete summations. However, none includes problems that involve continuous versions of resistors in parallel or capacitors in series. This paper introduces a method for solving the continuous problems that is logical, straightforward, and within the mathematical preparation of students at the introductory level.

  10. DLTS study of annihilation of oxidation induced deep-level defects ...

    Indian Academy of Sciences (India)

    Administrator

    microelectronics device technologies. As technology is ... an important role in manufacturing high-speed electronic ... DLTS is a capacitance transient thermal scanning tech- ... again dipped in methanol and dried using nitrogen gun. A.

  11. The study of the deep levels of In/CdTe Schottky diode

    International Nuclear Information System (INIS)

    Kim, Hey-kyeong; Jeen, Gwangsoo; Nam, S.H.

    2000-01-01

    p-type CdTe is an important component of II-VI compound based solar cells as well as a promising substance for X- and gamma-ray detector. Despite that a lot of researches has been performed on CdTe, the manufacture of large homogeneous ingots with high resistivity (ρ) and a high value of lifetime-mobility product (μτ) still difficult. Both ρ and μτ, which determine detection properties, are strongly dependent on the impurity and defect levels of crystals. As in general, deep defect levels act as recombination centers and influence strongly the efficiency of the detector material, so information about deep levels is an essential need. To estimate deep levels of semiconductor materials, the TSC (thermally stimulated current), TSCD (thermally stimulated capacitor discharges) and admittance spectroscopic method are used. In order to study the deep levels of CdTe, the samples were taken from a CdTe-crystal grown by the vertical Bridgman method. From this boule single crystalline samples of about 0.5 mm thickness were prepared. All samples were initially p-type which was determined by the hot-probe method. In-CdTe Schottky diodes were prepared by the process of evaporation of In in the vacuum of 10 -6 Torr on surface of CdTe. The area of the deposited contact was equal to 1.626 mm 2 . As ohmic contacts, dots of Au soldered for 30 min. in temperature 160 deg C. Measurements were carried out within a 100-250 K temperature and 1-10 kHz frequency range. Related Arrhenius plots, i.e. the experimentally determined emission rates corresponding to the signal maximum divided by the square of temperature as a function of reciprocal temperature are plotted. The experimental data were best fitted by the least-square method. The fitting yielded the defect level energies E T . In this study, by using admittance spectroscopy measurements, we presented the information about the energy and concentration of the defect levels inside the gap, in order to improve the quality of

  12. Capacitance densitometer for flow regime identification

    International Nuclear Information System (INIS)

    Shipp, R.L. Jr.

    1978-01-01

    This invention relates to a capacitance densitometer for determining the flow regime of a two-phase flow system. A two-element capacitance densitometer is used in conjunction with a conventional single-beam gamma densitometer to unambiguously identify the prevailing flow regime and the average density of a flowing fluid

  13. Resonant frequency detection and adjustment method for a capacitive transducer with differential transformer bridge

    Energy Technology Data Exchange (ETDEWEB)

    Hu, M.; Bai, Y. Z., E-mail: abai@mail.hust.edu.cn; Zhou, Z. B., E-mail: zhouzb@mail.hust.edu.cn; Li, Z. X.; Luo, J. [MOE Key Laboratory of Fundamental Physical Quantities Measurement, School of Physics, Huazhong University of Science and Technology, Wuhan 430074 (China)

    2014-05-15

    The capacitive transducer with differential transformer bridge is widely used in ultra-sensitive space accelerometers due to their simple structure and high resolution. In this paper, the front-end electronics of an inductive-capacitive resonant bridge transducer is analyzed. The analysis result shows that the performance of this transducer depends upon the case that the AC pumping frequency operates at the resonance point of the inductive-capacitive bridge. The effect of possible mismatch between the AC pumping frequency and the actual resonant frequency is discussed, and the theoretical analysis indicates that the output voltage noise of the front-end electronics will deteriorate by a factor of about 3 due to either a 5% variation of the AC pumping frequency or a 10% variation of the tuning capacitance. A pre-scanning method to determine the actual resonant frequency is proposed followed by the adjustment of the operating frequency or the change of the tuning capacitance in order to maintain expected high resolution level. An experiment to verify the mismatching effect and the adjustment method is provided.

  14. Resonant frequency detection and adjustment method for a capacitive transducer with differential transformer bridge

    International Nuclear Information System (INIS)

    Hu, M.; Bai, Y. Z.; Zhou, Z. B.; Li, Z. X.; Luo, J.

    2014-01-01

    The capacitive transducer with differential transformer bridge is widely used in ultra-sensitive space accelerometers due to their simple structure and high resolution. In this paper, the front-end electronics of an inductive-capacitive resonant bridge transducer is analyzed. The analysis result shows that the performance of this transducer depends upon the case that the AC pumping frequency operates at the resonance point of the inductive-capacitive bridge. The effect of possible mismatch between the AC pumping frequency and the actual resonant frequency is discussed, and the theoretical analysis indicates that the output voltage noise of the front-end electronics will deteriorate by a factor of about 3 due to either a 5% variation of the AC pumping frequency or a 10% variation of the tuning capacitance. A pre-scanning method to determine the actual resonant frequency is proposed followed by the adjustment of the operating frequency or the change of the tuning capacitance in order to maintain expected high resolution level. An experiment to verify the mismatching effect and the adjustment method is provided

  15. Deep levels in as-grown and electron-irradiated n-type GaN studied by deep level transient spectroscopy and minority carrier transient spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Duc, Tran Thien [Department of Physics, Chemistry and Biology (IFM), Linköping University, S-581 83 Linköping (Sweden); School of Engineering Physics, Hanoi University of Science and Technology, 1 Dai Co Viet Road, Hanoi (Viet Nam); Pozina, Galia; Son, Nguyen Tien; Kordina, Olof; Janzén, Erik; Hemmingsson, Carl [Department of Physics, Chemistry and Biology (IFM), Linköping University, S-581 83 Linköping (Sweden); Ohshima, Takeshi [Japan Atomic Energy Agency (JAEA), Takasaki, Gunma 370-1292 (Japan)

    2016-03-07

    Development of high performance GaN-based devices is strongly dependent on the possibility to control and understand defects in material. Important information about deep level defects is obtained by deep level transient spectroscopy and minority carrier transient spectroscopy on as-grown and electron irradiated n-type bulk GaN with low threading dislocation density produced by halide vapor phase epitaxy. One hole trap labelled H1 (E{sub V} + 0.34 eV) has been detected on as-grown GaN sample. After 2 MeV electron irradiation, the concentration of H1 increases and at fluences higher than 5 × 10{sup 14 }cm{sup −2}, a second hole trap labelled H2 is observed. Simultaneously, the concentration of two electron traps, labelled T1 (E{sub C} – 0.12 eV) and T2 (E{sub C} – 0.23 eV), increases. By studying the increase of the defect concentration versus electron irradiation fluence, the introduction rate of T1 and T2 using 2 MeV- electrons was determined to be 7 × 10{sup −3 }cm{sup −1} and 0.9 cm{sup −1}, respectively. Due to the low introduction rate of T1, it is suggested that the defect is associated with a complex. The high introduction rate of trap H1 and T2 suggests that the defects are associated with primary intrinsic defects or complexes. Some deep levels previously observed in irradiated GaN layers with higher threading dislocation densities are not detected in present investigation. It is therefore suggested that the absent traps may be related to primary defects segregated around dislocations.

  16. The calculation of deep levels in semiconductors by using a recursion method for super-cells

    International Nuclear Information System (INIS)

    Wong Yongliang.

    1987-01-01

    The paper presents the theory of deep levels in semiconductors, the super-cell approach to the theory of deep level impurities, the calculation of band structure by using the tight-binding method and the recursion method used to study the defects in the presence of lattice relaxation and extended defect complexes. 47 refs

  17. Should the U.S. proceed to consider licensing deep geological disposal of high-level nuclear waste

    International Nuclear Information System (INIS)

    Curtiss, J.R.

    1993-01-01

    The United States, as well as other countries facing the question of how to handle high-level nuclear waste, has decided that the most appropriate means of disposal is in a deep geologic repository. In recent years, the Radioactive Waste Management Committee of the Nuclear Energy Agency has developed several position papers on the technical achievability of deep geologic disposal, thus demonstrating the serious consideration of deep geologic disposal in the international community. The Committee has not, as yet, formally endorsed disposal in a deep geologic repository as the preferred method of handling high-level nuclear waste. The United States, on the other hand, has studied the various methods of disposing of high-level nuclear waste, and has determined that deep geologic disposal is the method that should be developed. The purpose of this paper is to present a review of the United States' decision on selecting deep geologic disposal as the preferred method of addressing the high-level waste problem. It presents a short history of the steps taken by the U.S. in determining what method to use, discusses the NRC's waste Confidence Decision, and provides information on other issues in the U.S. program such as reconsideration of the final disposal standard and the growing inventory of spent fuel in storage

  18. Rapid capacitive detection of femtomolar levels of bisphenol A using an aptamer-modified disposable microelectrode array

    International Nuclear Information System (INIS)

    Cui, Haochen; Wu, Jayne; Eda, Shigetoshi; Chen, Jiangang; Chen, Wei; Zheng, Lei

    2015-01-01

    A label-free and single-step method is reported for rapid and highly sensitive detection of bisphenol A (BPA) in aqueous samples. It utilizes an aptamer acting as a probe molecule immobilized on a commercially available array of interdigitated aluminum microelectrodes. BPA was quantified by measuring the interfacial capacitance change rate caused by the specific binding between bisphenol A and the immobilized aptamer. The AC signal also induces an AC electrokinetic effect to generate microfluidic motion for enhanced binding. The capacitive aptasensor achieves a limit of detection as low as 10 fM(2.8 fg ⋅ mL −1 ) with a 20 s response time. The method is inexpensive, highly sensitive, rapid and therefore provides a promising technology for on-site detection of BPA in food and water samples. (author)

  19. Voltage Dependence of Supercapacitor Capacitance

    Directory of Open Access Journals (Sweden)

    Szewczyk Arkadiusz

    2016-09-01

    Full Text Available Electronic Double-Layer Capacitors (EDLC, called Supercapacitors (SC, are electronic devices that are capable to store a relatively high amount of energy in a small volume comparing to other types of capacitors. They are composed of an activated carbon layer and electrolyte solution. The charge is stored on electrodes, forming the Helmholtz layer, and in electrolyte. The capacitance of supercapacitor is voltage- dependent. We propose an experimental method, based on monitoring of charging and discharging a supercapacitor, which enables to evaluate the charge in an SC structure as well as the Capacitance-Voltage (C-V dependence. The measurement setup, method and experimental results of charging/discharging commercially available supercapacitors in various voltage and current conditions are presented. The total charge stored in an SC structure is proportional to the square of voltage at SC electrodes while the charge on electrodes increases linearly with the voltage on SC electrodes. The Helmholtz capacitance increases linearly with the voltage bias while a sublinear increase of total capacitance was found. The voltage on SC increases after the discharge of electrodes due to diffusion of charges from the electrolyte to the electrodes. We have found that the recovery voltage value is linearly proportional to the initial bias voltage value.

  20. Ferroelectric Negative Capacitance Domain Dynamics

    OpenAIRE

    Hoffmann, Michael; Khan, Asif Islam; Serrao, Claudy; Lu, Zhongyuan; Salahuddin, Sayeef; Pešić, Milan; Slesazeck, Stefan; Schroeder, Uwe; Mikolajick, Thomas

    2017-01-01

    Transient negative capacitance effects in epitaxial ferroelectric Pb(Zr$_{0.2}$Ti$_{0.8}$)O$_3$ capacitors are investigated with a focus on the dynamical switching behavior governed by domain nucleation and growth. Voltage pulses are applied to a series connection of the ferroelectric capacitor and a resistor to directly measure the ferroelectric negative capacitance during switching. A time-dependent Ginzburg-Landau approach is used to investigate the underlying domain dynamics. The transien...

  1. Capacitive divider for output voltage measurement of intense electron beam accelerator

    International Nuclear Information System (INIS)

    Ding Desheng; Yi Lingzhi; Yu Binxiong; Hong Zhiqiang; Liu Jinliang

    2012-01-01

    A kind of simple-mechanism, easy-disassembly self-integrating capacitive divider used for measuring diode output voltage of intense electron beam accelerator (IEBA) is developed. The structure of the capacitive divider is described, and the capacitance value of the capacitive divider is calculated by theoretical analysis and electromagnetic simulation. The dependence of measurement voltage on electrical parameters such as stray capacitance, earth capacitance of front resistance is obtained by PSpice simulation. Measured waveforms appear overshoot phenomenon when stray capacitance of front resistance is larger, and the wavefront will be affected when earth capacitance of front resistance is larger. The diode output voltage waveforms of intense electron beam accelerator, are measured by capacitive divider and calibrated by water resistance divider, which is accordance with that measured by a resistive divider, the division ratio is about 563007. The designed capacitive divider can be used to measure high-voltage pulse with 100 ns full width at half maximum. (authors)

  2. Deep subcritical levels measurements dependents upon kinetic distortion factors

    International Nuclear Information System (INIS)

    Pan Shibiao; Li Xiang; Fu Guo'en; Huang Liyuan; Mu Keliang

    2013-01-01

    The measurement of deep subcritical levels, with the increase of subcriticality, showed that the results impact on the kinetic distortion effect, along with neutron flux strongly deteriorated. Using the diffusion theory, calculations have been carried out to quantify the kinetic distortion correction factors in subcritical systems, and these indicate that epithermal neutron distributions are strongly affected by kinetic distortion. Subcriticality measurements in four different rod-state combination at the zero power device was carried out. The test data analysis shows that, with increasing subcriticality, kinetic distortion effect correction factor gradually increases from 1.052 to 1.065, corresponding reactive correction amount of 0.78β eff ∼ 3.01β eff . Thus, it is necessary to consider the kinetic distortion effect in the deep subcritical reactivity measurements. (authors)

  3. Investigation of electrically-active deep levels in single-crystalline diamond by particle-induced charge transient spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Kada, W., E-mail: kada.wataru@gunma-u.ac.jp [Faculty of Science and Technology, Gunma University, Kiryu, Gunma 376-8515 (Japan); Kambayashi, Y.; Ando, Y. [Faculty of Science and Technology, Gunma University, Kiryu, Gunma 376-8515 (Japan); Japan Atomic Energy Agency, Takasaki, Gunma 370-1292 (Japan); Onoda, S. [Japan Atomic Energy Agency, Takasaki, Gunma 370-1292 (Japan); Umezawa, H.; Mokuno, Y. [National Institute of Advanced Industrial Science and Technology (AIST), 1-8-31 Midorigaoka, Ikeda, Osaka 563-8577 (Japan); Shikata, S. [Kwansei Gakuin Univ., 2-1, Gakuen, Mita, Hyogo 669-1337 (Japan); Makino, T.; Koka, M. [Japan Atomic Energy Agency, Takasaki, Gunma 370-1292 (Japan); Hanaizumi, O. [Faculty of Science and Technology, Gunma University, Kiryu, Gunma 376-8515 (Japan); Kamiya, T.; Ohshima, T. [Japan Atomic Energy Agency, Takasaki, Gunma 370-1292 (Japan)

    2016-04-01

    To investigate electrically-active deep levels in high-resistivity single-crystalline diamond, particle-induced charge transient spectroscopy (QTS) techniques were performed using 5.5 MeV alpha particles and 9 MeV carbon focused microprobes. For unintentionally-doped (UID) chemical vapor deposition (CVD) diamond, deep levels with activation energies of 0.35 eV and 0.43 eV were detected which correspond to the activation energy of boron acceptors in diamond. The results suggested that alpha particle and heavy ion induced QTS techniques are the promising candidate for in-situ investigation of deep levels in high-resistivity semiconductors.

  4. Deep-level transient spectroscopy of low-energy ion-irradiated silicon

    DEFF Research Database (Denmark)

    Kolkovsky, Vladimir; Privitera, V.; Nylandsted Larsen, Arne

    2009-01-01

     During electron-gun deposition of metal layers on semiconductors, the semiconductor is bombarded with low-energy metal ions creating defects in the outermost surface layer. For many years, it has been a puzzle why deep-level transient spectroscopy spectra of the as-deposited, electron-gun evapor...

  5. Deep-level optical spectroscopy investigation of N-doped TiO2 films

    International Nuclear Information System (INIS)

    Nakano, Yoshitaka; Morikawa, Takeshi; Ohwaki, Takeshi; Taga, Yasunori

    2005-01-01

    N-doped TiO 2 films were deposited on n + -GaN/Al 2 O 3 substrates by reactive magnetron sputtering and subsequently crystallized by annealing at 550 deg. C in flowing N 2 gas. The N-doping concentration was ∼8.8%, as determined from x-ray photoelectron spectroscopy measurements. Deep-level optical spectroscopy measurements revealed two characteristic deep levels located at ∼1.18 and ∼2.48 eV below the conduction band. The 1.18 eV level is probably attributable to the O vacancy state and can be active as an efficient generation-recombination center. Additionally, the 2.48 eV band is newly introduced by the N doping and contributes to band-gap narrowing by mixing with the O 2p valence band

  6. Study and microscopic characterization of the cadmium telluride deep levels

    International Nuclear Information System (INIS)

    Biglari, B.

    1989-05-01

    The spectroscopic methods PICTS, QTS and CTS were developed and perfected to investigate deep level analysis of high resistivity CdTe crystals which were either undoped, or doped with chlorine and copper. Crystals which were grown in space were also investigated. The main characterization of defect levels was determined and different correlations were established between the material's resistivity, chemical residues, dopant concentration and the nuclear radiation detector parameters. Using PICTS and CTS techniques, the generation of defects, under strong gamma-ray irradiation and particle bombardment was also studied. The influence of hydrogen on the main electrical characteristics of CdTe, in particular its ability to passivate the electrical activity of many deep defect and impurity states have been demonstrated. The compensation effects of Cl, Cu and H + are interpreted using the qualitative models based on different possibilities of pairing or triplet formation between the ions of these dopants and those of defects [fr

  7. Switchless charge-discharge circuit for electrical capacitance tomography

    International Nuclear Information System (INIS)

    Kryszyn, J; Smolik, W T; Radzik, B; Olszewski, T; Szabatin, R

    2014-01-01

    The main factor limiting the performance of electrical capacitance tomography (ECT) is an extremely low value of inter-electrode capacitances. The charge-discharge circuit is a well suited circuit for a small capacitance measurement due to its immunity to noise and stray capacitance, although it has a problem associated with a charge injected by the analogue switches, which results in a dc offset. This paper presents a new diode-based circuit for capacitance measurement in which a charge transfer method is realized without switches. The circuit was built and tested in one channel configuration with 16 multiplexed electrodes. The performance of the elaborated circuit and a comparison with a classic charge-discharge circuit are presented. The elaborated circuit can be used for sensors with inter-electrode capacitances not lower than 10 fF. The presented approach allows us to obtain a similar performance to the classic charge-discharge circuit, but has a simplified design. A lack of the need to synchronize the analogue switches in the transmitter and the receiver part of this circuit could be a desirable feature in the design of measurement systems integrated with electrodes. (paper)

  8. Lack of mutagens in deep-fat-fried foods obtained at the retail level.

    Science.gov (United States)

    Taylor, S L; Berg, C M; Shoptaugh, N H; Scott, V N

    1982-04-01

    The basic methylene chloride extract from 20 of 30 samples of foods fried in deep fat failed to elicit any mutagenic response that could be detected in the Salmonella typhimurium/mammalian microsome assay. The basic extracts of the remaining ten samples (all three chicken samples studied, two of the four potato-chip samples, one of four corn-chip samples, the sample of onion rings, two of six doughnuts, and one of three samples of french-fried potato) showed evidence of weak mutagenic activity. In these samples, amounts of the basic extract equivalent to 28.5-57 g of the original food sample were required to produce revertants at levels of 2.6-4.8 times the background level. Only two of the acidic methylene chloride extracts from the 30 samples exhibited mutagenic activity greater than 2.5 times the background reversion level, and in both cases (one corn-chip and one shrimp sample) the mutagenic response was quite weak. The basic extract of hamburgers fried in deep fat in a home-style fryer possessed higher levels of mutagenic activity (13 times the background reversion level). However, the mutagenic activity of deep-fried hamburgers is some four times lower than that of pan-fried hamburgers.

  9. Electrosorption capacitance of nanostructured carbon-based materials.

    Science.gov (United States)

    Hou, Chia-Hung; Liang, Chengdu; Yiacoumi, Sotira; Dai, Sheng; Tsouris, Costas

    2006-10-01

    The fundamental mechanism of electrosorption of ions developing a double layer inside nanopores was studied via a combination of experimental and theoretical studies. A novel graphitized-carbon monolithic material has proven to be a good electrical double-layer capacitor that can be applied in the separation of ions from aqueous solutions. An extended electrical double-layer model indicated that the pore size distribution plays a key role in determining the double-layer capacitance in an electrosorption process. Because of the occurrence of double-layer overlapping in narrow pores, mesopores and micropores make significantly different contributions to the double-layer capacitance. Mesopores show good electrochemical accessibility. Micropores present a slow mass transfer of ions and a considerable loss of double-layer capacitance, associated with a shallow potential distribution inside pores. The formation of the diffuse layer inside the micropores determines the magnitude of the double-layer capacitance at low electrolyte concentrations and at conditions close to the point of zero charge of the material. The effect of the double-layer overlapping on the electrosorption capacitance can be reduced by increasing the pore size, electrolyte concentration, and applied potential. The results are relevant to water deionization.

  10. A 45.8fJ/Step, energy-efficient, differential SAR capacitance-to-digital converter for capacitive pressure sensing

    KAUST Repository

    Alhoshany, Abdulaziz

    2016-05-03

    An energy-efficient readout circuit for a capacitive sensor is presented. The capacitive sensor is digitized by a 12-bit energy efficient capacitance-to-digital converter (CDC) that is based on a differential successive-approximation architecture. This CDC meets extremely low power requirements by using an operational transconductance amplifier (OTA) that is based on a current-starved inverter. It uses a charge-redistribution DAC that involves coarse-fine architecture. We split the DAC into a coarse-DAC and a fine-DAC to allow a wide capacitance range in a compact area. It covers a wide range of capacitance of 16.14 pF with a 4.5 fF absolute resolution. An analog comparator is implemented by cross-coupling two 3-input NAND gates to enable power and area efficient operation. The prototype CDC was fabricated using a standard 180 nm CMOS technology. The 12-bit CDC has a measurement time of 42.5 μs, and consumes 3.54 μW and 0.29 μW from analog and digital supplies, respectively. This corresponds to a state-of-the-art figure-of-merit (FoM) of 45.8 fJ/conversion-step. © 2016 Elsevier B.V. All rights reserved.

  11. A 45.8fJ/Step, energy-efficient, differential SAR capacitance-to-digital converter for capacitive pressure sensing

    KAUST Repository

    Alhoshany, Abdulaziz; Omran, Hesham; Salama, Khaled N.

    2016-01-01

    An energy-efficient readout circuit for a capacitive sensor is presented. The capacitive sensor is digitized by a 12-bit energy efficient capacitance-to-digital converter (CDC) that is based on a differential successive-approximation architecture. This CDC meets extremely low power requirements by using an operational transconductance amplifier (OTA) that is based on a current-starved inverter. It uses a charge-redistribution DAC that involves coarse-fine architecture. We split the DAC into a coarse-DAC and a fine-DAC to allow a wide capacitance range in a compact area. It covers a wide range of capacitance of 16.14 pF with a 4.5 fF absolute resolution. An analog comparator is implemented by cross-coupling two 3-input NAND gates to enable power and area efficient operation. The prototype CDC was fabricated using a standard 180 nm CMOS technology. The 12-bit CDC has a measurement time of 42.5 μs, and consumes 3.54 μW and 0.29 μW from analog and digital supplies, respectively. This corresponds to a state-of-the-art figure-of-merit (FoM) of 45.8 fJ/conversion-step. © 2016 Elsevier B.V. All rights reserved.

  12. The collisional capacitive RF sheath and the assumption of a sharp electron edge

    Science.gov (United States)

    Brinkmann, Ralf Peter

    2008-10-01

    The transition from quasi-neutrality to charge depletion is one of the characteristic features of the plasma boundary sheath. It is often described in terms of the so-called step model which assumes a transition point (electron step) where the electron density drops from a value equal to the ion density (in the bulk) to a value of zero (in the sheath). Inserted into Poisson's equation, the step model yields an expression for the field which is realistic deep in the sheath but fails to merge correctly into the ambipolar field of the bulk. This work studies the consequences of that approximation for the example of the collision-dominated, capacitive RF sheath by Lieberman [1]. First, the model is solved exactly, using a relaxation scheme. Then, the step approximation is applied which recovers Lieberman's semi-analytical solution. It is demonstrated that the step approximation induces a spurious divergence of the ion density at the sheath edge and prevents a matching of the sheath model to a bulk model. Integral sheath quantities, on the other hand, like the capacitance or the overall voltage drop, are faithfully reproduced. [1] M. A. Lieberman, IEEE Trans. Plasma Sci. 16, pp. 638-644 (1988).

  13. Deep-level transient spectroscopy on an amorphous InGaZnO4 Schottky diode

    NARCIS (Netherlands)

    Chasin, A.; Simoen, E.; Bhoolokam, A.; Nag, M.; Genoe, J.; Gielen, G.; Heremans, P.

    2014-01-01

    The first direct measurement is reported of the bulk density of deep states in amorphous IGZO (indium-gallium-zinc oxide) semiconductor by means of deep-level transient spectroscopy (DLTS). The device under test is a Schottky diode of amorphous IGZO semiconductor on a palladium (Pd) Schottky-barrier

  14. Localized deep levels in AlxGa1−xN epitaxial films with various Al compositions

    International Nuclear Information System (INIS)

    Shi Li-Yang; Shen Bo; Wang Ping; Yan Jian-Chang; Wang Jun-Xi

    2014-01-01

    By using high-temperature deep-level transient spectroscopy (HT-DLTS) and other electrical measurement techniques, localized deep levels in n-type Al x Ga 1−x N epitaxial films with various Al compositions (x = 0, 0.14, 0.24, 0.33, and 0.43) have been investigated. It is found that there are three distinct deep levels in Al x Ga 1−x N films, whose level position with respect to the conduction band increases as Al composition increases. The dominant defect level with the activation energy deeper than 1.0 eV below the conduction band closely follows the Fermi level stabilization energy, indicating that its origin may be related to the defect complex, including the anti-site defects and divacancies in Al x Ga 1−x N films. (condensed matter: structural, mechanical, and thermal properties)

  15. Deep-level transient spectroscopy of TiO2/CuInS2 heterojunctions

    NARCIS (Netherlands)

    Nanu, M.; Boulch, F.; Schoonman, J.; Goossens, A.

    2005-01-01

    Deep-level transient spectroscopy (DLTS) has been used to measure the concentration and energy position of deep electronic states in CuInS2. Flat TiO2?CuInS2 heterojunctions as well as TiO2-CuInS2 nanocomposites have been investigated. Subband-gap electronic states in CuInS2 films are mostly due to

  16. Multi-level deep supervised networks for retinal vessel segmentation.

    Science.gov (United States)

    Mo, Juan; Zhang, Lei

    2017-12-01

    Changes in the appearance of retinal blood vessels are an important indicator for various ophthalmologic and cardiovascular diseases, including diabetes, hypertension, arteriosclerosis, and choroidal neovascularization. Vessel segmentation from retinal images is very challenging because of low blood vessel contrast, intricate vessel topology, and the presence of pathologies such as microaneurysms and hemorrhages. To overcome these challenges, we propose a neural network-based method for vessel segmentation. A deep supervised fully convolutional network is developed by leveraging multi-level hierarchical features of the deep networks. To improve the discriminative capability of features in lower layers of the deep network and guide the gradient back propagation to overcome gradient vanishing, deep supervision with auxiliary classifiers is incorporated in some intermediate layers of the network. Moreover, the transferred knowledge learned from other domains is used to alleviate the issue of insufficient medical training data. The proposed approach does not rely on hand-crafted features and needs no problem-specific preprocessing or postprocessing, which reduces the impact of subjective factors. We evaluate the proposed method on three publicly available databases, the DRIVE, STARE, and CHASE_DB1 databases. Extensive experiments demonstrate that our approach achieves better or comparable performance to state-of-the-art methods with a much faster processing speed, making it suitable for real-world clinical applications. The results of cross-training experiments demonstrate its robustness with respect to the training set. The proposed approach segments retinal vessels accurately with a much faster processing speed and can be easily applied to other biomedical segmentation tasks.

  17. Deep Levels of Processing Elicit a Distinctiveness Heuristic: Evidence from the Criterial Recollection Task

    Science.gov (United States)

    Gallo, David A.; Meadow, Nathaniel G.; Johnson, Elizabeth L.; Foster, Katherine T.

    2008-01-01

    Thinking about the meaning of studied words (deep processing) enhances memory on typical recognition tests, relative to focusing on perceptual features (shallow processing). One explanation for this levels-of-processing effect is that deep processing leads to the encoding of more distinctive representations (i.e., more unique semantic or…

  18. Human-level control through deep reinforcement learning

    Science.gov (United States)

    Mnih, Volodymyr; Kavukcuoglu, Koray; Silver, David; Rusu, Andrei A.; Veness, Joel; Bellemare, Marc G.; Graves, Alex; Riedmiller, Martin; Fidjeland, Andreas K.; Ostrovski, Georg; Petersen, Stig; Beattie, Charles; Sadik, Amir; Antonoglou, Ioannis; King, Helen; Kumaran, Dharshan; Wierstra, Daan; Legg, Shane; Hassabis, Demis

    2015-02-01

    The theory of reinforcement learning provides a normative account, deeply rooted in psychological and neuroscientific perspectives on animal behaviour, of how agents may optimize their control of an environment. To use reinforcement learning successfully in situations approaching real-world complexity, however, agents are confronted with a difficult task: they must derive efficient representations of the environment from high-dimensional sensory inputs, and use these to generalize past experience to new situations. Remarkably, humans and other animals seem to solve this problem through a harmonious combination of reinforcement learning and hierarchical sensory processing systems, the former evidenced by a wealth of neural data revealing notable parallels between the phasic signals emitted by dopaminergic neurons and temporal difference reinforcement learning algorithms. While reinforcement learning agents have achieved some successes in a variety of domains, their applicability has previously been limited to domains in which useful features can be handcrafted, or to domains with fully observed, low-dimensional state spaces. Here we use recent advances in training deep neural networks to develop a novel artificial agent, termed a deep Q-network, that can learn successful policies directly from high-dimensional sensory inputs using end-to-end reinforcement learning. We tested this agent on the challenging domain of classic Atari 2600 games. We demonstrate that the deep Q-network agent, receiving only the pixels and the game score as inputs, was able to surpass the performance of all previous algorithms and achieve a level comparable to that of a professional human games tester across a set of 49 games, using the same algorithm, network architecture and hyperparameters. This work bridges the divide between high-dimensional sensory inputs and actions, resulting in the first artificial agent that is capable of learning to excel at a diverse array of challenging tasks.

  19. Human-level control through deep reinforcement learning.

    Science.gov (United States)

    Mnih, Volodymyr; Kavukcuoglu, Koray; Silver, David; Rusu, Andrei A; Veness, Joel; Bellemare, Marc G; Graves, Alex; Riedmiller, Martin; Fidjeland, Andreas K; Ostrovski, Georg; Petersen, Stig; Beattie, Charles; Sadik, Amir; Antonoglou, Ioannis; King, Helen; Kumaran, Dharshan; Wierstra, Daan; Legg, Shane; Hassabis, Demis

    2015-02-26

    The theory of reinforcement learning provides a normative account, deeply rooted in psychological and neuroscientific perspectives on animal behaviour, of how agents may optimize their control of an environment. To use reinforcement learning successfully in situations approaching real-world complexity, however, agents are confronted with a difficult task: they must derive efficient representations of the environment from high-dimensional sensory inputs, and use these to generalize past experience to new situations. Remarkably, humans and other animals seem to solve this problem through a harmonious combination of reinforcement learning and hierarchical sensory processing systems, the former evidenced by a wealth of neural data revealing notable parallels between the phasic signals emitted by dopaminergic neurons and temporal difference reinforcement learning algorithms. While reinforcement learning agents have achieved some successes in a variety of domains, their applicability has previously been limited to domains in which useful features can be handcrafted, or to domains with fully observed, low-dimensional state spaces. Here we use recent advances in training deep neural networks to develop a novel artificial agent, termed a deep Q-network, that can learn successful policies directly from high-dimensional sensory inputs using end-to-end reinforcement learning. We tested this agent on the challenging domain of classic Atari 2600 games. We demonstrate that the deep Q-network agent, receiving only the pixels and the game score as inputs, was able to surpass the performance of all previous algorithms and achieve a level comparable to that of a professional human games tester across a set of 49 games, using the same algorithm, network architecture and hyperparameters. This work bridges the divide between high-dimensional sensory inputs and actions, resulting in the first artificial agent that is capable of learning to excel at a diverse array of challenging tasks.

  20. Design of double capacitances infrasonic receiver

    International Nuclear Information System (INIS)

    Wang Changhai; Han Kuixia; Wang Fei

    2003-01-01

    The article introduces the theory of infrasonic generation and reception of nuclear explosion. An idea of the design of double capacitances infrasonic receiver using CPLD technology is given in it. Compare with the single capacitance infrasonic receiver, sensitivity of the improved receiver can be improved scores of times, dynamic range can be improved largely, and the whole performance gets improvement a lots

  1. Interdigitated electrodes as impedance and capacitance biosensors: A review

    Science.gov (United States)

    Mazlan, N. S.; Ramli, M. M.; Abdullah, M. M. A. B.; Halin, D. S. C.; Isa, S. S. M.; Talip, L. F. A.; Danial, N. S.; Murad, S. A. Z.

    2017-09-01

    Interdigitated electrodes (IDEs) are made of two individually addressable interdigitated comb-like electrode structures. IDEs are one of the most favored transducers, widely utilized in technological applications especially in the field of biological and chemical sensors due to their inexpensive, ease of fabrication process and high sensitivity. In order to detect and analyze a biochemical molecule or analyte, the impedance and capacitance signal need to be obtained. This paper investigates the working principle and influencer of the impedance and capacitance biosensors. The impedance biosensor depends on the resistance and capacitance while the capacitance biosensor influenced by the dielectric permittivity. However, the geometry and structures of the interdigitated electrodes affect both impedance and capacitance biosensor. The details have been discussed in this paper.

  2. Multi-Channel Capacitive Sensor Arrays

    Directory of Open Access Journals (Sweden)

    Bingnan Wang

    2016-01-01

    Full Text Available In this paper, multi-channel capacitive sensor arrays based on microstrip band-stop filters are studied. The sensor arrays can be used to detect the proximity of objects at different positions and directions. Each capacitive sensing structure in the array is connected to an inductive element to form resonance at different frequencies. The resonances are designed to be isolated in the frequency spectrum, such that the change in one channel does not affect resonances at other channels. The inductive element associated with each capacitive sensor can be surface-mounted inductors, integrated microstrip inductors or metamaterial-inspired structures. We show that by using metamaterial split-ring structures coupled to a microstrip line, the quality factor of each resonance can be greatly improved compared to conventional surface-mounted or microstrip meander inductors. With such a microstrip-coupled split-ring design, more sensing elements can be integrated in the same frequency spectrum, and the sensitivity can be greatly improved.

  3. Bioenergetics of mammalian sperm capacitation.

    Science.gov (United States)

    Ferramosca, Alessandra; Zara, Vincenzo

    2014-01-01

    After ejaculation, the mammalian male gamete must undergo the capacitation process, which is a prerequisite for egg fertilization. The bioenergetics of sperm capacitation is poorly understood despite its fundamental role in sustaining the biochemical and molecular events occurring during gamete activation. Glycolysis and mitochondrial oxidative phosphorylation (OXPHOS) are the two major metabolic pathways producing ATP which is the primary source of energy for spermatozoa. Since recent data suggest that spermatozoa have the ability to use different metabolic substrates, the main aim of this work is to present a broad overview of the current knowledge on the energy-producing metabolic pathways operating inside sperm mitochondria during capacitation in different mammalian species. Metabolism of glucose and of other energetic substrates, such as pyruvate, lactate, and citrate, is critically analyzed. Such knowledge, besides its obvious importance for basic science, could eventually translate into the development of novel strategies for treatment of male infertility, artificial reproduction, and sperm selection methods.

  4. A robust parasitic-insensitive successive approximation capacitance-to-digital converter

    KAUST Repository

    Omran, Hesham

    2014-09-01

    In this paper, we present a capacitive sensor digital interface circuit using true capacitance-domain successive approximation that is independent of supply voltage. Robust operation is achieved by using a charge amplifier stage and multiple comparison technique. The interface circuit is insensitive to parasitic capacitances, offset voltages, and charge injection, and is not prone to noise coupling. The proposed design achieves very low temperature sensitivity of 25ppm/oC. A coarse-fine programmable capacitance array allows digitizing a wide capacitance range of 16pF with 12.5-bit quantization limited resolution in a compact area of 0.07mm2. The fabricated prototype is experimentally verified using on-chip sensor and off-chip MEMS capacitive pressure sensor. © 2014 IEEE.

  5. A robust parasitic-insensitive successive approximation capacitance-to-digital converter

    KAUST Repository

    Omran, Hesham; Arsalan, Muhammad; Salama, Khaled N.

    2014-01-01

    In this paper, we present a capacitive sensor digital interface circuit using true capacitance-domain successive approximation that is independent of supply voltage. Robust operation is achieved by using a charge amplifier stage and multiple comparison technique. The interface circuit is insensitive to parasitic capacitances, offset voltages, and charge injection, and is not prone to noise coupling. The proposed design achieves very low temperature sensitivity of 25ppm/oC. A coarse-fine programmable capacitance array allows digitizing a wide capacitance range of 16pF with 12.5-bit quantization limited resolution in a compact area of 0.07mm2. The fabricated prototype is experimentally verified using on-chip sensor and off-chip MEMS capacitive pressure sensor. © 2014 IEEE.

  6. A reciprocity-based formula for the capacitance with quadrupolar electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Cho, Sungbo [Gachon University of Medicine and Science, Incheon (Korea, Republic of)

    2011-11-15

    A new capacitance formula for the practical design and characterization of quadrupolar electrode arrays with capacitive structures was derived based on the reciprocal theorem. The reciprocity-based capacitance formula agreed with the empirical equations established to estimate the capacitance of a single strip line or disk electrode compensating for the fringing field effect that occurs at the electrode edge. The reciprocity-based formula was applied to compute the capacitance measurable by using a quadrupolar square electrode array with a symmetric dipole-dipole configuration and was compared with the analytical equation established based on the image method assuming that the electrodes were points. The results showed that the capacitance of the quadrupolar electrodes was determined by the size of the quadrupolar electrodes relative to the separation distance between the electrodes and that the reciprocity-based capacitance formula was in agreement with the established analytical equation if the separated distance between the electrodes relative to the electrode size was large enough.

  7. A reciprocity-based formula for the capacitance with quadrupolar electrodes

    International Nuclear Information System (INIS)

    Cho, Sungbo

    2011-01-01

    A new capacitance formula for the practical design and characterization of quadrupolar electrode arrays with capacitive structures was derived based on the reciprocal theorem. The reciprocity-based capacitance formula agreed with the empirical equations established to estimate the capacitance of a single strip line or disk electrode compensating for the fringing field effect that occurs at the electrode edge. The reciprocity-based formula was applied to compute the capacitance measurable by using a quadrupolar square electrode array with a symmetric dipole-dipole configuration and was compared with the analytical equation established based on the image method assuming that the electrodes were points. The results showed that the capacitance of the quadrupolar electrodes was determined by the size of the quadrupolar electrodes relative to the separation distance between the electrodes and that the reciprocity-based capacitance formula was in agreement with the established analytical equation if the separated distance between the electrodes relative to the electrode size was large enough.

  8. Measurement Error Estimation for Capacitive Voltage Transformer by Insulation Parameters

    Directory of Open Access Journals (Sweden)

    Bin Chen

    2017-03-01

    Full Text Available Measurement errors of a capacitive voltage transformer (CVT are relevant to its equivalent parameters for which its capacitive divider contributes the most. In daily operation, dielectric aging, moisture, dielectric breakdown, etc., it will exert mixing effects on a capacitive divider’s insulation characteristics, leading to fluctuation in equivalent parameters which result in the measurement error. This paper proposes an equivalent circuit model to represent a CVT which incorporates insulation characteristics of a capacitive divider. After software simulation and laboratory experiments, the relationship between measurement errors and insulation parameters is obtained. It indicates that variation of insulation parameters in a CVT will cause a reasonable measurement error. From field tests and calculation, equivalent capacitance mainly affects magnitude error, while dielectric loss mainly affects phase error. As capacitance changes 0.2%, magnitude error can reach −0.2%. As dielectric loss factor changes 0.2%, phase error can reach 5′. An increase of equivalent capacitance and dielectric loss factor in the high-voltage capacitor will cause a positive real power measurement error. An increase of equivalent capacitance and dielectric loss factor in the low-voltage capacitor will cause a negative real power measurement error.

  9. Anomalous Capacitive Sheath with Deep Radio Frequency Electric Field Penetration

    International Nuclear Information System (INIS)

    Kaganovich, Igor D.

    2002-01-01

    A novel nonlinear effect of anomalously deep penetration of an external radio-frequency electric field into a plasma is described. A self-consistent kinetic treatment reveals a transition region between the sheath and the plasma. Because of the electron velocity modulation in the sheath, bunches in the energetic electron density are formed in the transition region adjusted to the sheath. The width of the region is of order V(subscript T)/omega, where V(subscript T) is the electron thermal velocity, and w is frequency of the electric field. The presence of the electric field in the transition region results in a cooling of the energetic electrons and an additional heating of the cold electrons in comparison with the case when the transition region is neglected

  10. Development trends of combined inductance-capacitance electromechanical energy converters

    Directory of Open Access Journals (Sweden)

    Karayan Hamlet

    2018-01-01

    Full Text Available In the article the modern state of completely new direction of electromechanical science such as combined inductive-capacitive electromechanics is considered. The wide spectra of its possible practical applications and prospects for further development are analyzed. A new approach for mathematical description of transients in dualcon jugate dynamic systems is proposed. On the basis of the algorithm differential equations for inductive-capacitive compatible electromechanical energy converters are derived. The generalized Lagrangian theory of combined inductively-capacitive electric machines was developed as a union of generalized Lagrangian models of inductive and capacitive electro-mechanical energy converters developed on the basis of the basic principles of binary-conjugate electrophysics. The author gives equations of electrodynamics and electromechanics of combined inductive-capacitive electric machines in case there are active electrotechnical materials of dual purpose (ferroelectromagnets in the structure of their excitation system. At the same time, the necessary Lagrangian for combined inductive-capacitive forces was built using new technologies of interaction between inductive and capacitive subsystems. The joint solution of these equations completely determines the dynamic behavior and energy characteristics of the generalized model of combined machines of any design and in any modes of interaction of their functional elements

  11. Deep geologic storage of high level radioactive wastes: conceptual generic designs

    International Nuclear Information System (INIS)

    1995-01-01

    This report summarizes the studies on deep geologic storage of radioactive wastes and specially for the high-level radioactive wastes. The study is focussed to the geotechnical assessment and generic-conceptual designs. Methodology analysis, geotechnical feasibility, costs and operation are studied

  12. DeepPy: Pythonic deep learning

    DEFF Research Database (Denmark)

    Larsen, Anders Boesen Lindbo

    This technical report introduces DeepPy – a deep learning framework built on top of NumPy with GPU acceleration. DeepPy bridges the gap between highperformance neural networks and the ease of development from Python/NumPy. Users with a background in scientific computing in Python will quickly...... be able to understand and change the DeepPy codebase as it is mainly implemented using high-level NumPy primitives. Moreover, DeepPy supports complex network architectures by letting the user compose mathematical expressions as directed graphs. The latest version is available at http...

  13. Capacitance-Power-Hysteresis Trilemma in Nanoporous Supercapacitors

    Directory of Open Access Journals (Sweden)

    Alpha A. Lee

    2016-06-01

    Full Text Available Nanoporous supercapacitors are an important player in the field of energy storage that fill the gap between dielectric capacitors and batteries. The key challenge in the development of supercapacitors is the perceived trade-off between capacitance and power delivery. Current efforts to boost the capacitance of nanoporous supercapacitors focus on reducing the pore size so that they can only accommodate a single layer of ions. However, this tight packing compromises the charging dynamics and hence power density. We show via an analytical theory and Monte Carlo simulations that charging is sensitively dependent on the affinity of ions to the pores, and that high capacitances can be obtained for ionophobic pores of widths significantly larger than the ion diameter. Our theory also predicts that charging can be hysteretic with a significant energy loss per cycle for intermediate ionophilicities. We use these observations to explore the parameter regimes in which a capacitance-power-hysteresis trilemma may be avoided.

  14. A capacitive ECG array with visual patient feedback.

    Science.gov (United States)

    Eilebrecht, Benjamin; Schommartz, Antje; Walter, Marian; Wartzek, Tobias; Czaplik, Michael; Leonhardt, Steffen

    2010-01-01

    Capacitive electrocardiogram (ECG) sensing is a promising technique for less constraining vital signal measurement and close to a commercial application. Even bigger trials testing the diagnostic significance were already done with single lead systems. Anyway, most applications to be found in research are limited to one channel and thus limited in its diagnostic relevance as only diseases coming along with a change of the heart rate can be diagnosed adequately. As a consequence the need for capacitive multi-channel ECGs combining the diagnostic relevance and the advantages of capacitive ECG sensing emerges. This paper introduces a capacitive ECG measurement system which allows the recording of standardized ECG leads according to Einthoven and Goldberger by means of an electrode array with nine electrodes.

  15. High levels of natural radionuclides in a deep-sea infaunal xenophyophore

    Energy Technology Data Exchange (ETDEWEB)

    Swinbanks, D D; Shirayama, Y

    1986-03-27

    The paper concerns the high levels of natural radionuclides in a deep-sea infaunal xenophyophore from the Izu-Ogasawara Trench. Measured /sup 210/Po activities and barium contents of various parts of Occultammina profunda and the surrounding sediment are given, together with their estimated /sup 210/Pb and /sup 226/Ra activities. The data suggest that xenophyphores are probably subject to unusually high levels of natural radiation.

  16. Negative capacitance in a ferroelectric capacitor.

    Science.gov (United States)

    Khan, Asif Islam; Chatterjee, Korok; Wang, Brian; Drapcho, Steven; You, Long; Serrao, Claudy; Bakaul, Saidur Rahman; Ramesh, Ramamoorthy; Salahuddin, Sayeef

    2015-02-01

    The Boltzmann distribution of electrons poses a fundamental barrier to lowering energy dissipation in conventional electronics, often termed as Boltzmann Tyranny. Negative capacitance in ferroelectric materials, which stems from the stored energy of a phase transition, could provide a solution, but a direct measurement of negative capacitance has so far been elusive. Here, we report the observation of negative capacitance in a thin, epitaxial ferroelectric film. When a voltage pulse is applied, the voltage across the ferroelectric capacitor is found to be decreasing with time--in exactly the opposite direction to which voltage for a regular capacitor should change. Analysis of this 'inductance'-like behaviour from a capacitor presents an unprecedented insight into the intrinsic energy profile of the ferroelectric material and could pave the way for completely new applications.

  17. Membrane capacitive deionization

    NARCIS (Netherlands)

    Biesheuvel, P.M.; Wal, van der A.

    2010-01-01

    Membrane capacitive deionization (MCDI) is an ion-removal process based on applying an electrical potential difference across an aqueous solution which flows in between oppositely placed porous electrodes, in front of which ion-exchange membranes are positioned. Due to the applied potential, ions

  18. Quantum capacitance in topological insulators under strain in a tilted magnetic field

    KAUST Repository

    Tahir, M.

    2012-12-06

    Topological insulators exhibit unique properties due to surface states of massless Dirac fermions with conserved time reversal symmetry. We consider the quantum capacitance under strain in an external tilted magnetic field and demonstrate a minimum at the charge neutrality point due to splitting of the zeroth Landau level. We also find beating in the Shubnikov de Haas oscillations due to strain, which originate from the topological helical states. Varying the tilting angle from perpendicular to parallel washes out these oscillations with a strain induced gap at the charge neutrality point. Our results explain recent quantum capacitance and transport experiments.

  19. Quantum capacitance in topological insulators under strain in a tilted magnetic field

    KAUST Repository

    Tahir, M.; Schwingenschlö gl, Udo

    2012-01-01

    Topological insulators exhibit unique properties due to surface states of massless Dirac fermions with conserved time reversal symmetry. We consider the quantum capacitance under strain in an external tilted magnetic field and demonstrate a minimum at the charge neutrality point due to splitting of the zeroth Landau level. We also find beating in the Shubnikov de Haas oscillations due to strain, which originate from the topological helical states. Varying the tilting angle from perpendicular to parallel washes out these oscillations with a strain induced gap at the charge neutrality point. Our results explain recent quantum capacitance and transport experiments.

  20. cLite – A Capacitive Signal Conditioning IC

    Directory of Open Access Journals (Sweden)

    Krauss Gudrun

    2009-12-01

    Full Text Available The ZMD31210 cLite™ – a new member of the ZMDI’s Lite™ family of low-cost sensor signal conditioner (SSC integrated circuits – is described in this paper. The cLite™ is the first conditioner for capacitive sensors. Supporting sensor capacitances from 2 pF up to 260 pF, the new sensor signal conditioner covers a wide range of applications. An important aspect of conditioning a capacitance sensor input signal is the adaptation of the capacitive-to-digital converter (CDC input range to the sensor signal span and offset values in order to maximize accuracy. All typical features of the Lite™ family including the digital calibration math based on EEPROM-stored coefficients and a variety of outputs (I2C™, SPI, PDM, and programmable alarms are integrated in the cLite™ as well. Additional features including a sleep mode and low supply voltage range (down to 2.3 V support the low power concept. The paper focuses in particular on the capacitance sensor adaptation and high precision sensor conditioning.

  1. Extended deep level defects in Ge-condensed SiGe-on-Insulator structures fabricated using proton and helium implantations

    International Nuclear Information System (INIS)

    Kwak, D.W.; Lee, D.W.; Oh, J.S.; Lee, Y.H.; Cho, H.Y.

    2012-01-01

    SiGe-on-Insulator (SGOI) structures were created using the Ge condensation method, where an oxidation process is performed on the SiGe/Si structure. This method involves rapid thermal chemical vapor deposition and H + /He + ion-implantations. Deep level defects in these structures were investigated using deep level transient spectroscopy (DLTS) by varying the pulse injection time. According to the DLTS measurements, a deep level defect induced during the Ge condensation process was found at 0.28 eV above the valence band with a capture cross section of 2.67 × 10 −17 cm 2 , two extended deep levels were also found at 0.54 eV and 0.42 eV above the valence band with capture cross sections of 3.17 × 10 −14 cm 2 and 0.96 × 10 −15 cm 2 , respectively. In the SGOI samples with ion-implantation, the densities of the newly generated defects as well as the existing defects were decreased effectively. Furthermore, the Coulomb barrier heights of the extended deep level defects were drastically reduced. Thus, we suggest that the Ge condensation method with H + ion implantation could reduce deep level defects generated from the condensation and control the electrical properties of the condensed SiGe layers. - Highlights: ► We have fabricated low-defective SiGe-on-Insulator (SGOI) with implantation method. ► H + and He + -ions are used for ion-implantation method. ► We have investigated the deep level defects of SGOI layers. ► Ge condensation method using H + ion implantation could reduce extended defects. ► They could enhance electrical properties.

  2. Study on effective MOSFET channel length extracted from gate capacitance

    Science.gov (United States)

    Tsuji, Katsuhiro; Terada, Kazuo; Fujisaka, Hisato

    2018-01-01

    The effective channel length (L GCM) of metal-oxide-semiconductor field-effect transistors (MOSFETs) is extracted from the gate capacitances of actual-size MOSFETs, which are measured by charge-injection-induced-error-free charge-based capacitance measurement (CIEF CBCM). To accurately evaluate the capacitances between the gate and the channel of test MOSFETs, the parasitic capacitances are removed by using test MOSFETs having various channel sizes and a source/drain reference device. A strong linear relationship between the gate-channel capacitance and the design channel length is obtained, from which L GCM is extracted. It is found that L GCM is slightly less than the effective channel length (L CRM) extracted from the measured MOSFET drain current. The reason for this is discussed, and it is found that the capacitance between the gate electrode and the source and drain regions affects this extraction.

  3. Electrical and optical deep level spectroscopy on Os doped p-InP

    International Nuclear Information System (INIS)

    Parveen, S.; Zafar, N.; Khan, A.; Qureshi, U.S.; Iqbal, M.Z.

    1997-01-01

    Transition metal (TM) impurities are introduced for obtaining semi insulating (III-V) compound semiconductors used as base material for electronic and optoelectronic devices. TM doping introduces near mid gap levels which are used to compensate shallow level donors and acceptors in (III-V) compound semiconductors. The study of electrical properties of heavier transition metals in InP has been turned to an active field of research owing to their potential to produce thermally stable semi insulating substrate materials. Osmium has been tried for this purpose in our work. InP: Os samples have been grown by low pressure metalorganic chemical vapour deposition (LP-MOCVD). Optical and electrical Deep Level Transient Spectroscopy Techniques have been used to characterise osmium related deep level defects in the p-type samples. Three majority carrier (Hole) emitting levels OsA, OsB, OsC and one minority carrier (electron) emitting level Osl are observed in the DLTS and ODLTS measurements on p-type InP:Os. ON optical injection, only Osl appears and all other majority carrier emitting levels disappear dramatically. Special emphasis is given to the detailed comparison by ODLTS and EDLTS, which yields important information on the relative capture cross-sections of Osmium induced levels in p-InP. (author)

  4. Reducing the capacitance of piezoelectric film sensors

    Energy Technology Data Exchange (ETDEWEB)

    González, Martín G., E-mail: mggonza@fi.uba.ar [Grupo de Láser, Óptica de Materiales y Aplicaciones Electromagnéticas (GLOMAE), Departamento de Física, Facultad de Ingeniería, Universidad de Buenos Aires, Paseo Colón 850, C1063ACV Buenos Aires (Argentina); Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET), C1425FQB Buenos Aires (Argentina); Sorichetti, Patricio A.; Santiago, Guillermo D. [Grupo de Láser, Óptica de Materiales y Aplicaciones Electromagnéticas (GLOMAE), Departamento de Física, Facultad de Ingeniería, Universidad de Buenos Aires, Paseo Colón 850, C1063ACV Buenos Aires (Argentina)

    2016-04-15

    We present a novel design for large area, wideband, polymer piezoelectric sensor with low capacitance. The large area allows better spatial resolution in applications such as photoacoustic tomography and the reduced capacitance eases the design of fast transimpedance amplifiers. The metalized piezoelectric polymer thin film is segmented into N sections, electrically connected in series. In this way, the total capacitance is reduced by a factor 1/N{sup 2}, whereas the mechanical response and the active area of the sensor are not modified. We show the construction details for a two-section sensor, together with the impedance spectroscopy and impulse response experimental results that validate the design.

  5. Reducing the capacitance of piezoelectric film sensors

    International Nuclear Information System (INIS)

    González, Martín G.; Sorichetti, Patricio A.; Santiago, Guillermo D.

    2016-01-01

    We present a novel design for large area, wideband, polymer piezoelectric sensor with low capacitance. The large area allows better spatial resolution in applications such as photoacoustic tomography and the reduced capacitance eases the design of fast transimpedance amplifiers. The metalized piezoelectric polymer thin film is segmented into N sections, electrically connected in series. In this way, the total capacitance is reduced by a factor 1/N"2, whereas the mechanical response and the active area of the sensor are not modified. We show the construction details for a two-section sensor, together with the impedance spectroscopy and impulse response experimental results that validate the design.

  6. Theory of substrate, Zeeman, and electron-phonon interaction effects on the quantum capacitance in graphene

    KAUST Repository

    Tahir, M.; Sabeeh, K.; Schwingenschlö gl, Udo; Shaukat, A.

    2013-01-01

    Since the discovery of graphene, a lot of interest has been attracted by the zeroth Landau level, which has no analog in the conventional two dimensional electron gas. Recently, lifting of the spin and valley degeneracies has been confirmed experimentally by capacitance measurements, while in transport experiments, this is difficult due to the scattering in the device. In this context, we model interaction effects on the quantum capacitance of graphene in the presence of a perpendicular magnetic field, finding good agreement with experiments. We demonstrate that the valley degeneracy is lifted by the substrate and by Kekule distortion, whereas the spin degeneracy is lifted by Zeeman interaction. The two cases can be distinguished by capacitance measurements.

  7. Theory of substrate, Zeeman, and electron-phonon interaction effects on the quantum capacitance in graphene

    KAUST Repository

    Tahir, M.

    2013-12-10

    Since the discovery of graphene, a lot of interest has been attracted by the zeroth Landau level, which has no analog in the conventional two dimensional electron gas. Recently, lifting of the spin and valley degeneracies has been confirmed experimentally by capacitance measurements, while in transport experiments, this is difficult due to the scattering in the device. In this context, we model interaction effects on the quantum capacitance of graphene in the presence of a perpendicular magnetic field, finding good agreement with experiments. We demonstrate that the valley degeneracy is lifted by the substrate and by Kekule distortion, whereas the spin degeneracy is lifted by Zeeman interaction. The two cases can be distinguished by capacitance measurements.

  8. Theory of substrate, Zeeman, and electron-phonon interaction effects on the quantum capacitance in graphene

    International Nuclear Information System (INIS)

    Tahir, M.; Sabeeh, K.; Shaukat, A.; Schwingenschlögl, U.

    2013-01-01

    Since the discovery of graphene, a lot of interest has been attracted by the zeroth Landau level, which has no analog in the conventional two dimensional electron gas. Recently, lifting of the spin and valley degeneracies has been confirmed experimentally by capacitance measurements, while in transport experiments, this is difficult due to the scattering in the device. In this context, we model interaction effects on the quantum capacitance of graphene in the presence of a perpendicular magnetic field, finding good agreement with experiments. We demonstrate that the valley degeneracy is lifted by the substrate and by Kekule distortion, whereas the spin degeneracy is lifted by Zeeman interaction. The two cases can be distinguished by capacitance measurements

  9. Capacitive-discharge-pumped copper bromide vapour laser

    International Nuclear Information System (INIS)

    Sukhanov, V B; Fedorov, V F; Troitskii, V O; Gubarev, F A; Evtushenko, Gennadii S

    2007-01-01

    A copper bromide vapour laser pumped by a high-frequency capacitive discharge is developed. It is shown that, by using of a capacitive discharge, it is possible to built a sealed off metal halide vapour laser of a simple design allowing the addition of active impurities into the working medium. (letters)

  10. The split delivery capacitated team orienteering problem

    NARCIS (Netherlands)

    Archetti, C.; Bianchessi, N.; Speranza, M. G.; Hertz, A.

    2014-01-01

    In this article, we study the capacitated team orienteering problem where split deliveries are allowed. A set of potential customers is given, each associated with a demand and a profit. The set of customers to be served by a fleet of capacitated vehicles has to be identified in such a way that the

  11. Holey nickel-cobalt layered double hydroxide thin sheets with ultrahigh areal capacitance

    Science.gov (United States)

    Zhi, Lei; Zhang, Wenliang; Dang, Liqin; Sun, Jie; Shi, Feng; Xu, Hua; Liu, Zonghuai; Lei, Zhibin

    2018-05-01

    Strong coupling of electroactive components on conductive carbonaceous matrix to fabricate flexible hybrid electrodes represents a promising approach towards high performance supercapacitors. This work reports the fabrication of holey nickel cobalt layered double hydroxide (NiCo-LDH) nanosheets that are vertically grown on the cotton cloth-derived activated textile carbon (aTC). The abundant nanoholes on the thin-sheet NiCo-LDH not only enhance the electrode efficiency for efficient Faradaic redox reactions but also facilitate access of electrolyte to the electrode surface, thus giving rise to 70% capacitance arising from their outer surface. As a result, the aTC-NiCo hybrid electrode is capable of simultaneously achieving extremely high areal capacitance (6.37 F cm-2), mass capacitance (525 F g-1) and volumetric capacitance (249 F cm-3) at a practical level of mass loading (6.72 mg cm-2). Moreover, a solid-state asymmetric capacitor built with aTC-NiCo as positive electrode and active carbon-coated on aTC as negative electrode can deliver a volumetric energy density of 7.4 mWh cm-3 at a power density of 103 mW cm-3, while preserving a superior power performance, satisfying cycling stability and good mechanical flexibility.

  12. Assessment of azadirachtin-A, a neem tetranortritarpinoid, on rat spermatozoa during in vitro capacitation.

    Science.gov (United States)

    Katte, Teesta V; Rajyalakshmi, Malempati; Aladakatti, Ravindranath H

    2018-05-05

    The exploration of the biological assessment of technical azadirachtin, a tetranortritarpinoid from the neem seed kernel, was reviewed. The present study was, therefore, designed to evaluate the dose-dependent in vitro effects of azadirachtin-A, particularly on the functional studies and determination of molecular events, which are critical in the process of sperm capacitation. To assess the effects of the azadirachtin-A on the functional studies, sperm capacitation, the total sperm adenosine triphosphate levels, acrosome reaction (AR), the sperm-egg interaction and the determination of molecular events like cyclic adenosine-3',5'-monophosphate and calcium levels, the appropriate volumes of the sperm suspension were added to the medium to a final concentration of 1×106 sperm/mL and incubated in a humidified atmosphere of 5% CO2 in air at 37°C. The increasing quantities 0.5-2.0 mM/mL and the equivalent volumes of 50% dimethyl sulfoxide were added to the control dishes prior to the addition of spermatozoa and then observed at various time-points for motility and other analyses. Results revealed the dose- and time-dependent decrease in the functional consequence of capacitation, i.e. the percentage of motile spermatozoa, motility score and sperm motility index, levels of molecular events in spermatozoa, followed by declined spontaneous AR leading to lesser binding of the cauda epididymal sperm to the Zona pellucida. The findings confirm the inhibition of rat sperm motility by blocking some biochemical pathways like energy utilization. They also demonstrate that sperm capacitation is associated with the decrease in AR and that the levels of molecular events in spermatozoa can guide us towards the development of a new male contraceptive constituent.

  13. Can root electrical capacitance be used to predict root mass in soil?

    Science.gov (United States)

    Dietrich, R C; Bengough, A G; Jones, H G; White, P J

    2013-07-01

    Electrical capacitance, measured between an electrode inserted at the base of a plant and an electrode in the rooting substrate, is often linearly correlated with root mass. Electrical capacitance has often been used as an assay for root mass, and is conventionally interpreted using an electrical model in which roots behave as cylindrical capacitors wired in parallel. Recent experiments in hydroponics show that this interpretation is incorrect and a new model has been proposed. Here, the new model is tested in solid substrates. The capacitances of compost and soil were determined as a function of water content, and the capacitances of cereal plants growing in sand or potting compost in the glasshouse, or in the field, were measured under contrasting irrigation regimes. Capacitances of compost and soil increased with increasing water content. At water contents approaching field capacity, compost and soil had capacitances at least an order of magnitude greater than those of plant tissues. For plants growing in solid substrates, wetting the substrate locally around the stem base was both necessary and sufficient to record maximum capacitance, which was correlated with stem cross-sectional area: capacitance of excised stem tissue equalled that of the plant in wet soil. Capacitance measured between two electrodes could be modelled as an electrical circuit in which component capacitors (plant tissue or rooting substrate) are wired in series. The results were consistent with the new physical interpretation of plant capacitance. Substrate capacitance and plant capacitance combine according to standard physical laws. For plants growing in wet substrate, the capacitance measured is largely determined by the tissue between the surface of the substrate and the electrode attached to the plant. Whilst the measured capacitance can, in some circumstances, be correlated with root mass, it is not a direct assay of root mass.

  14. Carbon nanofiber supercapacitors with large areal capacitances

    KAUST Repository

    McDonough, James R.

    2009-01-01

    We develop supercapacitor (SC) devices with large per-area capacitances by utilizing three-dimensional (3D) porous substrates. Carbon nanofibers (CNFs) functioning as active SC electrodes are grown on 3D nickel foam. The 3D porous substrates facilitate a mass loading of active electrodes and per-area capacitance as large as 60 mg/ cm2 and 1.2 F/ cm2, respectively. We optimize SC performance by developing an annealing-free CNF growth process that minimizes undesirable nickel carbide formation. Superior per-area capacitances described here suggest that 3D porous substrates are useful in various energy storage devices in which per-area performance is critical. © 2009 American Institute of Physics.

  15. High-level radioactive waste disposal in the deep ocean

    International Nuclear Information System (INIS)

    Hill, H.W.

    1977-01-01

    A joint programme has begun between the Fisheries Laboratory, Lowestoft and the Institute of Oceanographic Sciences, Wormley to study the dispersion of radioactivity in the deep ocean arising from the possible dumping of high level waste on the sea bed in vitrified-glass form which would permit slow leakage over a long term scale. The programme consists firstly of the development of a simple diffusion/advection model for the dispersion of radioactivity in a closed and finite ocean, which overcomes many of the criticisms of the earlier model proposed by Webb and Morley. Preliminary results from this new model are comparable to those of the Webb-Morley model for radio isotopes with half-lives of 10-300 years but are considerably more restrictive outside this range, particularly for those which are much longer-lived. The second part of the programme, towards which the emphasis is directed, concerns the field programme planned to measure the advection and diffusion parameters in the deeper layers of the ocean to provide realistic input parameters to the model and increase our fundamental understanding of the environment in which the radioactive materials may be released. The first cruises of the programme will take place in late 1976 and involve deep current meter deployments and float dispersion experiments around the present NEA dump site with some sediment sampling, so that adsorption experiments can be started on typical deep sea sediments. The programme will expand the number of long-term deep moored stations over the next five years and include further float experiments, CTD profiling, and other physical oceanography. In the second half of the 5-year programme, attempts will be made to measure diffusion parameters in the deeper layers of the ocean using radioactive tracers

  16. Attofarad resolution capacitance-voltage measurement of nanometer scale field effect transistors utilizing ambient noise

    International Nuclear Information System (INIS)

    Gokirmak, Ali; Inaltekin, Hazer; Tiwari, Sandip

    2009-01-01

    A high resolution capacitance-voltage (C-V) characterization technique, enabling direct measurement of electronic properties at the nanoscale in devices such as nanowire field effect transistors (FETs) through the use of random fluctuations, is described. The minimum noise level required for achieving sub-aF (10 -18 F) resolution, the leveraging of stochastic resonance, and the effect of higher levels of noise are illustrated through simulations. The non-linear ΔC gate-source/drain -V gate response of FETs is utilized to determine the inversion layer capacitance (C inv ) and carrier mobility. The technique is demonstrated by extracting the carrier concentration and effective electron mobility in a nanoscale Si FET with C inv = 60 aF.

  17. A Review on the Recent Development of Capacitive Wireless Power Transfer Technology

    Directory of Open Access Journals (Sweden)

    Fei Lu

    2017-11-01

    Full Text Available Capacitive power transfer (CPT technology is an effective and important alternative to the conventional inductive power transfer (IPT. It utilizes high-frequency electric fields to transfer electric power, which has three distinguishing advantages: negligible eddy-current loss, relatively low cost and weight, and excellent misalignment performance. In recent years, the power level and efficiency of CPT systems has been significantly improved and has reached the power level suitable for electric vehicle charging applications. This paper reviews the latest developments in CPT technology, focusing on two key technologies: the compensation circuit topology and the capacitive coupler structure. The comparison with the IPT system and some critical issues in practical applications are also discussed. Based on these analyses, the future research direction can be developed and the applications of the CPT technology can be promoted.

  18. Radiation induced deep level defects in bipolar junction transistors under various bias conditions

    International Nuclear Information System (INIS)

    Liu, Chaoming; Yang, Jianqun; Li, Xingji; Ma, Guoliang; Xiao, Liyi; Bollmann, Joachim

    2015-01-01

    Bipolar junction transistor (BJT) is sensitive to ionization and displacement radiation effects in space. In this paper, 35 MeV Si ions were used as irradiation source to research the radiation damage on NPN and PNP bipolar transistors. The changing of electrical parameters of transistors was in situ measured with increasing irradiation fluence of 35 MeV Si ions. Using deep level transient spectroscopy (DLTS), defects in the bipolar junction transistors under various bias conditions are measured after irradiation. Based on the in situ electrical measurement and DLTS spectra, it is clearly that the bias conditions can affect the concentration of deep level defects, and the radiation damage induced by heavy ions.

  19. Capacitive behavior of highly-oxidized graphite

    Science.gov (United States)

    Ciszewski, Mateusz; Mianowski, Andrzej

    2014-09-01

    Capacitive behavior of a highly-oxidized graphite is presented in this paper. The graphite oxide was synthesized using an oxidizing mixture of potassium chlorate and concentrated fuming nitric acid. As-oxidized graphite was quantitatively and qualitatively analyzed with respect to the oxygen content and the species of oxygen-containing groups. Electrochemical measurements were performed in a two-electrode symmetric cell using KOH electrolyte. It was shown that prolonged oxidation causes an increase in the oxygen content while the interlayer distance remains constant. Specific capacitance increased with oxygen content in the electrode as a result of pseudo-capacitive effects, from 0.47 to 0.54 F/g for a scan rate of 20 mV/s and 0.67 to 1.15 F/g for a scan rate of 5 mV/s. Better cyclability was observed for the electrode with a higher oxygen amount.

  20. Deep impurity levels in n-type copper oxides

    International Nuclear Information System (INIS)

    Ovchinnikov, S.G.

    1994-01-01

    The density of Nd 2-x Ce x CuO 4 monoparticle states was calculated by the method of precise diagonalization of multielectron hamiltonian of 6-zone model for CuO cluster. Emergence of a deep impurity state of a symmetry in the middle of dielectric slit, which is a mixture of d z 2-states of copper and a 1 -molecular orbital of oxygen, is shown. Fluctuation of parameters of p-d jump and energies of charge transfer provide additional fine impurity levels near the bottom of conductivity zone and ceiling of valency zone. 30 refs., 4 figs

  1. Effect of calcium, bicarbonate, and albumin on capacitation-related events in equine sperm.

    Science.gov (United States)

    Macías-García, B; González-Fernández, L; Loux, S C; Rocha, A M; Guimarães, T; Peña, F J; Varner, D D; Hinrichs, K

    2015-01-01

    Repeatable methods for IVF have not been established in the horse, reflecting the failure of standard capacitating media to induce changes required for fertilization capacity in equine sperm. One important step in capacitation is membrane cholesterol efflux, which in other species is triggered by cholesterol oxidation and is typically enhanced using albumin as a sterol acceptor. We incubated equine sperm in the presence of calcium, BSA, and bicarbonate, alone or in combination. Bicarbonate induced an increase in reactive oxygen species (ROS) that was abolished by the addition of calcium or BSA. Bicarbonate induced protein tyrosine phosphorylation (PY), even in the presence of calcium or BSA. Incubation at high pH enhanced PY but did not increase ROS production. Notably, no combination of these factors was associated with significant cholesterol efflux, as assessed by fluorescent quantitative cholesterol assay and confirmed by filipin staining. By contrast, sperm treated with methyl-β-cyclodextrin showed a significant reduction in cholesterol levels, but no significant increase in PY or ROS. Presence of BSA increased sperm binding to bovine zonae pellucidae in all three stallions. These results show that presence of serum albumin is not associated with a reduction in membrane cholesterol levels in equine sperm, highlighting the failure of equine sperm to exhibit core capacitation-related changes in a standard capacitating medium. These data indicate an atypical relationship among cholesterol efflux, ROS production, and PY in equine sperm. Our findings may help to elucidate factors affecting failure of equine IVF under standard conditions. © 2015 Society for Reproduction and Fertility.

  2. Radiation effects on the current-voltage and capacitance-voltage characteristics of advanced p-n junction diodes surrounded by shallow trench isolation

    International Nuclear Information System (INIS)

    Poyai, A.; Simoen, E.; Claeys, C.; Hayama, K.; Kobayashi, K.; Ohyama, H.

    2002-01-01

    This paper investigates the impact of 20 MeV proton irradiation on the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of different geometry n + -p-well junction diodes surrounded by shallow trench isolation and processed in a 0.18 μm CMOS technology. From I-V characteristics, a higher current damage coefficient was found for the bulk than for the peripheral component. The radiation-induced boron de-activation resulted in a lowering of the p-well doping, which has been derived from high-frequency C-V measurements. This was confirmed by deep level transient spectroscopy (DLTS) analysis, revealing the presence of interstitial boron related radiation defects. As will be demonstrated for the bulk leakage-current damage coefficient, the electric field enhanced generation rate of charge carriers and the radiation-induced boron de-activation should be accounted for properly

  3. Design and Optimization of Capacitated Supply Chain Networks Including Quality Measures

    Directory of Open Access Journals (Sweden)

    Krystel K. Castillo-Villar

    2014-01-01

    Full Text Available This paper presents (1 a novel capacitated model for supply chain network design which considers manufacturing, distribution, and quality costs (named SCND-COQ model and (2 five combinatorial optimization methods, based on nonlinear optimization, heuristic, and metaheuristic approaches, which are used to solve realistic instances of practical size. The SCND-COQ model is a mixed-integer nonlinear problem which can be used at a strategic planning level to design a supply chain network that maximizes the total profit subject to meeting an overall quality level of the final product at minimum costs. The SCND-COQ model computes the quality-related costs for the whole supply chain network considering the interdependencies among business entities. The effectiveness of the proposed solution approaches is shown using numerical experiments. These methods allow solving more realistic (capacitated supply chain network design problems including quality-related costs (inspections, rework, opportunity costs, and others within a reasonable computational time.

  4. Deep geologic repository for low and intermediate radioactive level waste in Canada

    International Nuclear Information System (INIS)

    Liu Jianqin; Li Honghui; Sun Qinghong; Yang Zhongtian

    2012-01-01

    Ontario Power Generation (OPG) is undergoing a project for the long-term management of low and intermediate level waste (LILW)-a deep geologic repository (DGR) project for low and intermediate level waste. The waste source term disposed, geologic setting, repository layout and operation, and safety assessment are discussed. It is expected to provide reference for disposal of low and intermediate level waste that contain the higher concentration of long-lived radionuclides in China. (authors)

  5. Carrier Statistics and Quantum Capacitance Models of Graphene Nanoscroll

    Directory of Open Access Journals (Sweden)

    M. Khaledian

    2014-01-01

    schematic perfect scroll-like Archimedes spiral. The DOS model was derived at first, while it was later applied to compute the carrier concentration and quantum capacitance model. Furthermore, the carrier concentration and quantum capacitance were modeled for both degenerate and nondegenerate regimes, along with examining the effect of structural parameters and chirality number on the density of state and carrier concentration. Latterly, the temperature effect on the quantum capacitance was studied too.

  6. Programmable differential capacitance-to-voltage converter for MEMS accelerometers

    Science.gov (United States)

    Royo, G.; Sánchez-Azqueta, C.; Gimeno, C.; Aldea, C.; Celma, S.

    2017-05-01

    Capacitive MEMS sensors exhibit an excellent noise performance, high sensitivity and low power consumption. They offer a huge range of applications, being the accelerometer one of its main uses. In this work, we present the design of a capacitance-to-voltage converter in CMOS technology to measure the acceleration from the capacitance variations. It is based on a low-power, fully-differential transimpedance amplifier with low input impedance and a very low input noise.

  7. Reference design and operations for deep borehole disposal of high-level radioactive waste

    International Nuclear Information System (INIS)

    Herrick, Courtney Grant; Brady, Patrick Vane; Pye, Steven; Arnold, Bill Walter; Finger, John Travis; Bauer, Stephen J.

    2011-01-01

    A reference design and operational procedures for the disposal of high-level radioactive waste in deep boreholes have been developed and documented. The design and operations are feasible with currently available technology and meet existing safety and anticipated regulatory requirements. Objectives of the reference design include providing a baseline for more detailed technical analyses of system performance and serving as a basis for comparing design alternatives. Numerous factors suggest that deep borehole disposal of high-level radioactive waste is inherently safe. Several lines of evidence indicate that groundwater at depths of several kilometers in continental crystalline basement rocks has long residence times and low velocity. High salinity fluids have limited potential for vertical flow because of density stratification and prevent colloidal transport of radionuclides. Geochemically reducing conditions in the deep subsurface limit the solubility and enhance the retardation of key radionuclides. A non-technical advantage that the deep borehole concept may offer over a repository concept is that of facilitating incremental construction and loading at multiple perhaps regional locations. The disposal borehole would be drilled to a depth of 5,000 m using a telescoping design and would be logged and tested prior to waste emplacement. Waste canisters would be constructed of carbon steel, sealed by welds, and connected into canister strings with high-strength connections. Waste canister strings of about 200 m length would be emplaced in the lower 2,000 m of the fully cased borehole and be separated by bridge and cement plugs. Sealing of the upper part of the borehole would be done with a series of compacted bentonite seals, cement plugs, cement seals, cement plus crushed rock backfill, and bridge plugs. Elements of the reference design meet technical requirements defined in the study. Testing and operational safety assurance requirements are also defined. Overall

  8. Reference design and operations for deep borehole disposal of high-level radioactive waste.

    Energy Technology Data Exchange (ETDEWEB)

    Herrick, Courtney Grant; Brady, Patrick Vane; Pye, Steven; Arnold, Bill Walter; Finger, John Travis; Bauer, Stephen J.

    2011-10-01

    A reference design and operational procedures for the disposal of high-level radioactive waste in deep boreholes have been developed and documented. The design and operations are feasible with currently available technology and meet existing safety and anticipated regulatory requirements. Objectives of the reference design include providing a baseline for more detailed technical analyses of system performance and serving as a basis for comparing design alternatives. Numerous factors suggest that deep borehole disposal of high-level radioactive waste is inherently safe. Several lines of evidence indicate that groundwater at depths of several kilometers in continental crystalline basement rocks has long residence times and low velocity. High salinity fluids have limited potential for vertical flow because of density stratification and prevent colloidal transport of radionuclides. Geochemically reducing conditions in the deep subsurface limit the solubility and enhance the retardation of key radionuclides. A non-technical advantage that the deep borehole concept may offer over a repository concept is that of facilitating incremental construction and loading at multiple perhaps regional locations. The disposal borehole would be drilled to a depth of 5,000 m using a telescoping design and would be logged and tested prior to waste emplacement. Waste canisters would be constructed of carbon steel, sealed by welds, and connected into canister strings with high-strength connections. Waste canister strings of about 200 m length would be emplaced in the lower 2,000 m of the fully cased borehole and be separated by bridge and cement plugs. Sealing of the upper part of the borehole would be done with a series of compacted bentonite seals, cement plugs, cement seals, cement plus crushed rock backfill, and bridge plugs. Elements of the reference design meet technical requirements defined in the study. Testing and operational safety assurance requirements are also defined. Overall

  9. Positron deep-level transient spectroscopy in semi-insulating-GaAs using the positron velocity transient method

    International Nuclear Information System (INIS)

    Tsia, M.; Fung, S.; Beling, C.D.

    2001-01-01

    Recently a new semiconductor defect spectroscopy, namely positron deep level transient spectroscopy (PDLTS) has been proposed that combines the energy selectivity of deep level transient spectroscopy with the structural sensitivity of positron annihilation spectroscopy. This paper focuses on one variant of PDLTS, namely positron velocity PDLTS, which has no sensitivity towards vacancy defects but nevertheless is useful in studying deep levels in semi-insulators. In the present study the electric field within the depletion region of semi-insulating GaAs is monitored through the measurement of the small Doppler shift in the annihilation radiation that comes from this region as a result of positron drift. The drift is the result of an increasing electric field produced by space charge building up from ionizing deep level defects. Doppler shift transients are measured between 50-300 K. The EL2 level emission transients are clearly seen at temperatures around 300 K that yield E C -0.78±0.08eV for the energy of EL2. The EL2 electron capture rate is found to have an activation energy of 0.61±0.08eV which most probably arises from freeze out of conduction electrons. We find the surprising result that emission and capture transients can be seen at temperatures below 200 K. Possible reasons for these transients are discussed. (orig.)

  10. Human body capacitance: static or dynamic concept? [ESD

    DEFF Research Database (Denmark)

    Jonassen, Niels M

    1998-01-01

    A standing human body insulated from ground by footwear and/or floor covering is in principle an insulated conductor and has, as such, a capacitance, i.e. the ability to store a charge and possibly discharge the stored energy in a spark discharge. In the human body, the human body capacitance (HBC...... when a substantial part of the flux extends itself through badly defined stray fields. Since the concept of human body capacitance is normally used in a static (electric) context, it is suggested that the HBC be determined by a static method. No theoretical explanation of the observed differences...

  11. CAPACITANCE OF SUPERCAPACITORS WITH ELECTRODES BASED ON CARBON NANOCOMPOSITE MATERIAL

    OpenAIRE

    S.L Revo; B.I Rachiy; S Hamamda; T.G Avramenko; K.O Ivanenko

    2012-01-01

    This work presents the results of our research of the structure and practically important characteristics of a nanocomposite material on the basis of nanoporous carbon and thermally exfoliated graphite. This work shows that the use of the abovementioned composition in electrodes for supercapacitors allows to attain the level of their specific electrical capacitance at (155...160) F/g.

  12. Carrier accumulation and depletion in point-contact capacitance-voltage measurements

    Science.gov (United States)

    Naitou, Yuichi

    2017-11-01

    Scanning capacitance microscopy (SCM) is a variation of atomic force microscopy in which a conductive probe tip detects the bias modulated capacitance for the purpose of measuring the nanoscale semiconductor carrier concentration. SCM can be regarded as a point-contact capacitance-voltage system, and its capacitance-voltage properties are different from those of a conventional parallel-plate capacitor. In this study, the charge accumulation and depletion behavior of a semiconductor sample were closely investigated by SCM. By analyzing the tip-sample approach curve, the effective probe tip area and charge depletion depth could be quantitatively determined.

  13. Capacitance-based frequency adjustment of micro piezoelectric vibration generator.

    Science.gov (United States)

    Mao, Xinhua; He, Qing; Li, Hong; Chu, Dongliang

    2014-01-01

    Micro piezoelectric vibration generator has a wide application in the field of microelectronics. Its natural frequency is unchanged after being manufactured. However, resonance cannot occur when the natural frequencies of a piezoelectric generator and the source of vibration frequency are not consistent. Output voltage of the piezoelectric generator will sharply decline. It cannot normally supply power for electronic devices. In order to make the natural frequency of the generator approach the frequency of vibration source, the capacitance FM technology is adopted in this paper. Different capacitance FM schemes are designed by different locations of the adjustment layer. The corresponding capacitance FM models have been established. Characteristic and effect of the capacitance FM have been simulated by the FM model. Experimental results show that the natural frequency of the generator could vary from 46.5 Hz to 42.4 Hz when the bypass capacitance value increases from 0 nF to 30 nF. The natural frequency of a piezoelectric vibration generator could be continuously adjusted by this method.

  14. Capacitance-Based Frequency Adjustment of Micro Piezoelectric Vibration Generator

    Directory of Open Access Journals (Sweden)

    Xinhua Mao

    2014-01-01

    Full Text Available Micro piezoelectric vibration generator has a wide application in the field of microelectronics. Its natural frequency is unchanged after being manufactured. However, resonance cannot occur when the natural frequencies of a piezoelectric generator and the source of vibration frequency are not consistent. Output voltage of the piezoelectric generator will sharply decline. It cannot normally supply power for electronic devices. In order to make the natural frequency of the generator approach the frequency of vibration source, the capacitance FM technology is adopted in this paper. Different capacitance FM schemes are designed by different locations of the adjustment layer. The corresponding capacitance FM models have been established. Characteristic and effect of the capacitance FM have been simulated by the FM model. Experimental results show that the natural frequency of the generator could vary from 46.5 Hz to 42.4 Hz when the bypass capacitance value increases from 0 nF to 30 nF. The natural frequency of a piezoelectric vibration generator could be continuously adjusted by this method.

  15. Response to capacitating stimuli indicates extender-related differences in boar sperm function.

    Science.gov (United States)

    Schmid, S; Henning, H; Petrunkina, A M; Weitze, K F; Waberski, D

    2013-10-01

    Spermatozoa, especially those of the porcine species, are highly susceptible to in vitro chilling and ageing. Extenders are continuously developed to protect boar spermatozoa from chilling injury. New semen extenders and other modified preservation strategies require sensitive testing for essential sperm functions. The key process on the pathway of fertilization is capacitation. The aim of the present study was to examine whether the specific response to capacitating stimuli is sensitive enough to indicate different preservation capacities of extenders during hypothermic storage of boar spermatozoa. Semen was diluted in Beltsville Thawing Solution (BTS) and Androstar Plus and kept for 3 h at 22°C or stored at 17°C, 10°C, and 5°C. Semen was analyzed at 24 and 96 h of storage. Motility and membrane integrity remained at high levels, except for lower values when stored in BTS at 5°C. Washed subsamples were incubated in capacitating medium (Tyrode) and control medium and were assessed for intracellular calcium concentration and integrity of plasma membranes using a flow cytometer. On the basis of the loss of low-calcium live cells in a kinetic approach, the specific response to capacitation stimuli was determined. There was a higher loss of response in semen stored hypothermically in the standard extender BTS compared to Androstar Plus. Assessment of the extent of phospholipid disorder under capacitating and control conditions by use of merocyanine staining did not reveal any significant extender-related differences. A field insemination trial with 778 sows was performed to relate in vitro results to fertility. Fertility parameters did not differ in semen stored up to 48 h at 10°C in Androstar Plus compared to controls stored at 17°C in BTS. In conclusion, assessment of specific reactivity to capacitating stimuli appears to be a sensitive tool for detection of extender-dependent alterations in functionality of chilled boar spermatozoa.

  16. The capacitated team orienteering problem with incomplete service

    NARCIS (Netherlands)

    Archetti, Claudia; Bianchessi, Nicola; Speranza, M. Grazia

    2013-01-01

    In this paper we study the capacitated version of the Team Orienteering Problem (TOP), that is the Capacitated TOP (CTOP) and the impact of relaxing the assumption that a customer, if served, must be completely served. We prove that the profit collected by the CTOP with Incomplete Service (CTOP-IS)

  17. Capacitance for carbon capture

    International Nuclear Information System (INIS)

    Landskron, Kai

    2018-01-01

    Metal recycling: A sustainable, capacitance-assisted carbon capture and sequestration method (Supercapacitive Swing Adsorption) can turn scrap metal and CO 2 into metal carbonates at an attractive energy cost. (copyright 2018 Wiley-VCH Verlag GmbH and Co. KGaA, Weinheim)

  18. Automatic Power Factor Correction Using Capacitive Bank

    OpenAIRE

    Mr.Anant Kumar Tiwari,; Mrs. Durga Sharma

    2014-01-01

    The power factor correction of electrical loads is a problem common to all industrial companies. Earlier the power factor correction was done by adjusting the capacitive bank manually [1]. The automated power factor corrector (APFC) using capacitive load bank is helpful in providing the power factor correction. Proposed automated project involves measuring the power factor value from the load using microcontroller. The design of this auto-adjustable power factor correction is ...

  19. Scanning deep level transient spectroscopy using an MeV ion microprobe

    Energy Technology Data Exchange (ETDEWEB)

    Laird, J.S.; Bardos, R.A.; Saint, A.; Moloney, G.M.; Legge, G.F.J. [Melbourne Univ., Parkville, VIC (Australia)

    1993-12-31

    Traditionally the scanning ion microprobe has given little or no information regarding the electronic structure of materials in particular semiconductors. A new imaging technique called Scanning Ion Deep Level Transient Spectroscopy (SIDLTS) is presented which is able to spatially map alterations in the band gap structure of materials by lattice defects or impurities. 3 refs., 2 figs.

  20. Scanning deep level transient spectroscopy using an MeV ion microprobe

    Energy Technology Data Exchange (ETDEWEB)

    Laird, J S; Bardos, R A; Saint, A; Moloney, G M; Legge, G F.J. [Melbourne Univ., Parkville, VIC (Australia)

    1994-12-31

    Traditionally the scanning ion microprobe has given little or no information regarding the electronic structure of materials in particular semiconductors. A new imaging technique called Scanning Ion Deep Level Transient Spectroscopy (SIDLTS) is presented which is able to spatially map alterations in the band gap structure of materials by lattice defects or impurities. 3 refs., 2 figs.

  1. Electrostatic capacitance and Faraday cage behavior of carbon nanotube forests

    Energy Technology Data Exchange (ETDEWEB)

    Ya' akobovitz, A. [Mechanosynthesis Group, Department of Mechanical Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States); Department of Mechanical Engineering, Faculty of Engineering Sciences, Ben-Gurion University, Beer-Sheva (Israel); Bedewy, M. [Mechanosynthesis Group, Department of Mechanical Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States); Hart, A. J. [Mechanosynthesis Group, Department of Mechanical Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States); Department of Mechanical Engineering and Laboratory for Manufacturing and Productivity, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)

    2015-02-02

    Understanding of the electrostatic properties of carbon nanotube (CNT) forests is essential to enable their integration in microelectronic and micromechanical devices. In this study, we sought to understand how the hierarchical geometry and morphology of CNT forests determines their capacitance. First, we find that at small gaps, solid micropillars have greater capacitance, yet at larger gaps the capacitance of the CNT forests is greater. The surface area of the CNT forest accessible to the electrostatic field was extracted by analysis of the measured capacitance, and, by relating the capacitance to the average density of CNTs in the forest, we find that the penetration depth of the electrostatic field is on the order of several microns. Therefore, CNT forests can behave as a miniature Faraday cage. The unique electrostatic properties of CNT forests could therefore enable their use as long-range proximity sensors and as shielding elements for miniature electronic devices.

  2. Electrostatic capacitance and Faraday cage behavior of carbon nanotube forests

    International Nuclear Information System (INIS)

    Ya'akobovitz, A.; Bedewy, M.; Hart, A. J.

    2015-01-01

    Understanding of the electrostatic properties of carbon nanotube (CNT) forests is essential to enable their integration in microelectronic and micromechanical devices. In this study, we sought to understand how the hierarchical geometry and morphology of CNT forests determines their capacitance. First, we find that at small gaps, solid micropillars have greater capacitance, yet at larger gaps the capacitance of the CNT forests is greater. The surface area of the CNT forest accessible to the electrostatic field was extracted by analysis of the measured capacitance, and, by relating the capacitance to the average density of CNTs in the forest, we find that the penetration depth of the electrostatic field is on the order of several microns. Therefore, CNT forests can behave as a miniature Faraday cage. The unique electrostatic properties of CNT forests could therefore enable their use as long-range proximity sensors and as shielding elements for miniature electronic devices

  3. Electrostatic capacitance and Faraday cage behavior of carbon nanotube forests

    Science.gov (United States)

    Ya'akobovitz, A.; Bedewy, M.; Hart, A. J.

    2015-02-01

    Understanding of the electrostatic properties of carbon nanotube (CNT) forests is essential to enable their integration in microelectronic and micromechanical devices. In this study, we sought to understand how the hierarchical geometry and morphology of CNT forests determines their capacitance. First, we find that at small gaps, solid micropillars have greater capacitance, yet at larger gaps the capacitance of the CNT forests is greater. The surface area of the CNT forest accessible to the electrostatic field was extracted by analysis of the measured capacitance, and, by relating the capacitance to the average density of CNTs in the forest, we find that the penetration depth of the electrostatic field is on the order of several microns. Therefore, CNT forests can behave as a miniature Faraday cage. The unique electrostatic properties of CNT forests could therefore enable their use as long-range proximity sensors and as shielding elements for miniature electronic devices.

  4. High Voltage Bi-directional Flyback Converter for Capacitive Actuator

    DEFF Research Database (Denmark)

    Thummala, Prasanth; Zhang, Zhe; Andersen, Michael A. E.

    2013-01-01

    in the converter, including the most dominating parameters of the high voltage transformer viz., self-capacitance and leakage inductance. The specific capacitive load for this converter is a dielectric electro active polymer (DEAP) actuator, which can be used as an effective replacement for conventional actuators...... in a number of applications. In this paper, the discharging energy efficiency definition is introduced. The proposed converter has been experimentally tested with the film capacitive load and the DEAP actuator, and the experimental results are shown together with the efficiency measurements....

  5. Capacitance for carbon capture

    Energy Technology Data Exchange (ETDEWEB)

    Landskron, Kai [Department of Chemistry, Lehigh University, Bethlehem, PA (United States)

    2018-03-26

    Metal recycling: A sustainable, capacitance-assisted carbon capture and sequestration method (Supercapacitive Swing Adsorption) can turn scrap metal and CO{sub 2} into metal carbonates at an attractive energy cost. (copyright 2018 Wiley-VCH Verlag GmbH and Co. KGaA, Weinheim)

  6. Nanoscale capacitance imaging with attofarad resolution using ac current sensing atomic force microscopy

    International Nuclear Information System (INIS)

    Fumagalli, L; Ferrari, G; Sampietro, M; Casuso, I; MartInez, E; Samitier, J; Gomila, G

    2006-01-01

    Nanoscale capacitance imaging with attofarad resolution (∼1 aF) of a nano-structured oxide thin film, using ac current sensing atomic force microscopy, is reported. Capacitance images are shown to follow the topographic profile of the oxide closely, with nanometre vertical resolution. A comparison between experimental data and theoretical models shows that the capacitance variations observed in the measurements can be mainly associated with the capacitance probed by the tip apex and not with positional changes of stray capacitance contributions. Capacitance versus distance measurements further support this conclusion. The application of this technique to the characterization of samples with non-voltage-dependent capacitance, such as very thin dielectric films, self-assembled monolayers and biological membranes, can provide new insight into the dielectric properties at the nanoscale

  7. Nanoscale capacitance imaging with attofarad resolution using ac current sensing atomic force microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Fumagalli, L [Dipartimento di Elettronica e Informazione, Politecnico di Milano, Piazza Leonardo da Vinci 32, I-20133 (Italy); Ferrari, G [Dipartimento di Elettronica e Informazione, Politecnico di Milano, Piazza Leonardo da Vinci 32, I-20133 (Italy); Sampietro, M [Dipartimento di Elettronica e Informazione, Politecnico di Milano, Piazza Leonardo da Vinci 32, I-20133 (Italy); Casuso, I [Departament d' Electronica, Universitat de Barcelona, C/MartIi Franques 1, 08028 Barcelona (Spain); MartInez, E [Plataforma de Nanotecnologia, Parc Cientific de Barcelona, C/ Josep Samitier 1-5, 08028-Barcelona (Spain); Samitier, J [Departament d' Electronica, Universitat de Barcelona, C/MartIi Franques 1, 08028 Barcelona (Spain); Gomila, G [Departament d' Electronica, Universitat de Barcelona, C/MartIi Franques 1, 08028 Barcelona (Spain)

    2006-09-28

    Nanoscale capacitance imaging with attofarad resolution ({approx}1 aF) of a nano-structured oxide thin film, using ac current sensing atomic force microscopy, is reported. Capacitance images are shown to follow the topographic profile of the oxide closely, with nanometre vertical resolution. A comparison between experimental data and theoretical models shows that the capacitance variations observed in the measurements can be mainly associated with the capacitance probed by the tip apex and not with positional changes of stray capacitance contributions. Capacitance versus distance measurements further support this conclusion. The application of this technique to the characterization of samples with non-voltage-dependent capacitance, such as very thin dielectric films, self-assembled monolayers and biological membranes, can provide new insight into the dielectric properties at the nanoscale.

  8. Analyses of the deep borehole drilling status for a deep borehole disposal system

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Jong Youl; Choi, Heui Joo; Lee, Min Soo; Kim, Geon Young; Kim, Kyung Su [KAERI, Daejeon (Korea, Republic of)

    2016-05-15

    The purpose of disposal for radioactive wastes is not only to isolate them from humans, but also to inhibit leakage of any radioactive materials into the accessible environment. Because of the extremely high level and long-time scale radioactivity of HLW(High-level radioactive waste), a mined deep geological disposal concept, the disposal depth is about 500 m below ground, is considered as the safest method to isolate the spent fuels or high-level radioactive waste from the human environment with the best available technology at present time. Therefore, as an alternative disposal concept, i.e., deep borehole disposal technology is under consideration in number of countries in terms of its outstanding safety and cost effectiveness. In this paper, the general status of deep drilling technologies was reviewed for deep borehole disposal of high level radioactive wastes. Based on the results of these review, very preliminary applicability of deep drilling technology for deep borehole disposal analyzed. In this paper, as one of key technologies of deep borehole disposal system, the general status of deep drilling technologies in oil industry, geothermal industry and geo scientific field was reviewed for deep borehole disposal of high level radioactive wastes. Based on the results of these review, the very preliminary applicability of deep drilling technology for deep borehole disposal such as relation between depth and diameter, drilling time and feasibility classification was analyzed.

  9. Low Power/Low Voltage Interface Circuitry for Capacitive Sensors

    DEFF Research Database (Denmark)

    Furst, Claus Efdmann

    This thesis focuses mainly on low power/low voltage interface circuits, implemented in CMOS, for capacitive sensors. A brief discussion of demands and possibilities for analog signal processing in the future is presented. Techniques for low power design is presented. This is done by analyzing power...... power consumption. It is shown that the Sigma-Delta modulator is advantageous when embedded in a feedback loop with a mechanical sensor. Here a micro mechanical capacitive microphone. Feedback and detection circuitry for a capacitive microphone is presented. Practical implementations of low power....../low voltage interface circuitry is presented. It is demonstrated that an amplifier optimized for a capacitive microphone implemented in a standard 0.7 micron CMOS technology competes well with a traditional JFET amplifier. Furthermore a low power/low voltage 3rd order Sigma-Delta modulator is presented...

  10. Development of electrical capacitance sensor for tomography

    International Nuclear Information System (INIS)

    Rasif Mohd Zain; Jaafar Abdullah; Ismail Mustapha; Sazrol Azizee Ariff; Susan Maria Sipaun; Lojius Lombigit

    2004-01-01

    Electrical capacitance tomography (ECT) is one of the successful methods for imaging 2-phase liquid/gas mixture in oil pipelines and solids/gas mixture in fluidized bed and pneumatic conveying system for improvement of process plants. This paper presents the design development of an electrical capacitance sensor for use with an ECT system. This project is aimed at developing a demonstration ECT unit to be used in the oil pipe line. (Author)

  11. Capacitance-Power-Hysteresis Trilemma in Nanoporous Supercapacitors

    OpenAIRE

    Lee, Alpha A; Vella, Dominic; Goriely, Alain; Kondrat, Svyatoslav

    2015-01-01

    Nanoporous supercapacitors are an important player in the field of energy storage that fill the gap between dielectric capacitors and batteries. The key challenge in the development of supercapacitors is the perceived trade-off between capacitance and power delivery. Current efforts to boost the capacitance of nanoporous supercapacitors focus on reducing the pore size so that they can only accommodate a single layer of ions. However, this tight packing compromises the charging dynamics and he...

  12. Capacitance and surface of carbons in supercapacitors

    OpenAIRE

    Lobato Ortega, Belén; Suárez Fernández, Loreto; Guardia, Laura; Álvarez Centeno, Teresa

    2017-01-01

    This research is focused in the missing link between the specific surface area of carbons surface and their electrochemical capacitance. Current protocols used for the characterization of carbons applied in supercapacitors electrodes induce inconsistencies in the values of the interfacial capacitance (in F m−2), which is hindering the optimization of supercapacitors. The constraints of both the physisorption of N2 at 77 K and the standard methods used for the isotherm analysis frequently lead...

  13. Dispersion capacitive de l'interface H2SO4/Pt Capacitive dispersion ...

    African Journals Online (AJOL)

    Administrateur

    Département de Physique, Faculté des Sciences Exactes. Université des .... d'un comportement idéal de la capacité. Au vu .... Figure 2 : Photographie de la cellule Pt/0,5 MH2SO4 (fabriquée par Verre-Lab Constantine) plongée dans un bain.

  14. Deep Super Learner: A Deep Ensemble for Classification Problems

    OpenAIRE

    Young, Steven; Abdou, Tamer; Bener, Ayse

    2018-01-01

    Deep learning has become very popular for tasks such as predictive modeling and pattern recognition in handling big data. Deep learning is a powerful machine learning method that extracts lower level features and feeds them forward for the next layer to identify higher level features that improve performance. However, deep neural networks have drawbacks, which include many hyper-parameters and infinite architectures, opaqueness into results, and relatively slower convergence on smaller datase...

  15. Extracellular cAMP activates molecular signalling pathways associated with sperm capacitation in bovines.

    Science.gov (United States)

    Alonso, Carlos Agustín I; Osycka-Salut, Claudia E; Castellano, Luciana; Cesari, Andreína; Di Siervi, Nicolás; Mutto, Adrián; Johannisson, Anders; Morrell, Jane M; Davio, Carlos; Perez-Martinez, Silvina

    2017-08-01

    Is extracellular cAMP involved in the regulation of signalling pathways in bovine sperm capacitation? Extracellular cAMP induces sperm capacitation through the activation of different signalling pathways that involve phospholipase C (PLC), PKC/ERK1-2 signalling and an increase in sperm Ca2+ levels, as well as soluble AC and cAMP/protein kinase A (PKA) signalling. In order to fertilize the oocyte, ejaculated spermatozoa must undergo a series of changes in the female reproductive tract, known as capacitation. This correlates with a number of membrane and metabolic modifications that include an increased influx of bicarbonate and Ca2+, activation of a soluble adenylyl cyclase (sAC) to produce cAMP, PKA activation, protein tyrosine phosphorylation and the development of hyperactivated motility. We previously reported that cAMP efflux by Multidrug Resistance Protein 4 (MRP4) occurs during sperm capacitation and the pharmacological blockade of this inhibits the process. Moreover, the supplementation of incubation media with cAMP abolishes the inhibition and leads to sperm capacitation, suggesting that extracellular cAMP regulates crucial signalling cascades involved in this process. Bovine sperm were selected by the wool glass column method, and washed by centrifugation in BSA-Free Tyrode's Albumin Lactate Pyruvate (sp-TALP). Pellets were resuspended then diluted for each treatment. For in vitro capacitation, 10 to 15 × 106 SPZ/ml were incubated in 0.3% BSA sp-TALP at 38.5°C for 45 min under different experimental conditions. To evaluate the role of extracellular cAMP on different events associated with sperm capacitation, 10 nM cAMP was added to the incubation medium as well as different inhibitors of enzymes associated with signalling transduction pathways: U73122 (PLC inhibitor, 10 μM), Gö6983 (PKC inhibitor, 10 μM), PD98059 (ERK-1/2 inhibitor, 30 μM), H89 and KT (PKA inhibitors, 50 μM and 100 nM, respectively), KH7 (sAC inhibitor, 10 μM), BAPTA

  16. Clean energy generation using capacitive electrodes in reverse electrodialysis

    NARCIS (Netherlands)

    Vermaas, David; Bajracharya, S.; Bastos Sales, B.; Saakes, Michel; Hamelers, B.; Nijmeijer, Dorothea C.

    2013-01-01

    Capacitive reverse electrodialysis (CRED) is a newly proposed technology to generate electricity from mixing of salt water and fresh water (salinity gradient energy) by using a membrane pile as in reverse electrodialysis (RED) and capacitive electrodes. The salinity difference between salt water and

  17. Accurate sizing of supercapacitors storage system considering its capacitance variation.

    OpenAIRE

    Trieste , Sony; Bourguet , Salvy; Olivier , Jean-Christophe; Loron , Luc; Le Claire , Jean-Claude

    2011-01-01

    International audience; This paper highlights the energy errors made for the design of supercapacitors used as a main energy source. First of all, the paper presents the two definitions of capacitance of a capacitance-voltage dependent material. The number of supercapacitors is important for the application purchasing cost. That is why the paper introduces an analytical model and an electrical model along with an identification method for the capacitance variation. This variation is presented...

  18. The Effects of Test Anxiety on Learning at Superficial and Deep Levels of Processing.

    Science.gov (United States)

    Weinstein, Claire E.; And Others

    1982-01-01

    Using a deep-level processing strategy, low test-anxious college students performed significantly better than high test-anxious students in learning a paired-associate word list. Using a superficial-level processing strategy resulted in no significant difference in performance. A cognitive-attentional theory and test anxiety mechanisms are…

  19. SeaWiFS Deep Blue Aerosol Optical Thickness Monthly Level 3 Climatology Data Gridded at 0.5 Degrees V004

    Data.gov (United States)

    National Aeronautics and Space Administration — The SeaWiFS Deep Blue Level 3 Monthly Climatology Product contains monthly global climatology gridded (0.5 x 0.5 deg) data derived from SeaWiFS Deep Blue Level 3...

  20. Dual-wavelength photo-Hall effect spectroscopy of deep levels in high resistive CdZnTe with negative differential photoconductivity

    Science.gov (United States)

    Musiienko, A.; Grill, R.; Moravec, P.; Korcsmáros, G.; Rejhon, M.; Pekárek, J.; Elhadidy, H.; Šedivý, L.; Vasylchenko, I.

    2018-04-01

    Photo-Hall effect spectroscopy was used in the study of deep levels in high resistive CdZnTe. The monochromator excitation in the photon energy range 0.65-1.77 eV was complemented by a laser diode high-intensity excitation at selected photon energies. A single sample characterized by multiple unusual features like negative differential photoconductivity and anomalous depression of electron mobility was chosen for the detailed study involving measurements at both the steady and dynamic regimes. We revealed that the Hall mobility and photoconductivity can be both enhanced and suppressed by an additional illumination at certain photon energies. The anomalous mobility decrease was explained by an excitation of the inhomogeneously distributed deep level at the energy Ev + 1.0 eV, thus enhancing potential non-uniformities. The appearance of negative differential photoconductivity was interpreted by an intensified electron occupancy of that level by a direct valence band-to-level excitation. Modified Shockley-Read-Hall theory was used for fitting experimental results by a model comprising five deep levels. Properties of the deep levels and their impact on the device performance were deduced.

  1. Determination of deep-level impurities and their effects on the small-single and LF noise properties of ion-implanted GaAs MESFETs

    International Nuclear Information System (INIS)

    Sriram, S.; Kim, B.; Ghosh, P.K.; Das, M.B.; Pennsylvania State Univ., University Park; Pennsylvania State Univ., University Park

    1982-01-01

    A large number of deep levels, with energies ranging from Esub(c)-0.19eV to Esub(c)-0.9eV, have been identified and characterized using ion-implanted MESFET's on undoped and Cr-doped LEC-grown semi-insulating GaAs substrates. Measurement techniques used include deep level transient (DLTS) and steady state spectroscopic (DLSS) methods. Large capture cross-section values are obtained for levels below Esub(c)-0.5eV, possibly due to high electric field. Spectral densities of LF noise with distinct bulges have been shown to be related to deep levels. In some samples, natural deep level related oscillations have been observed and their ionization energies have been determined. (author)

  2. Design of capacitance measurement module for determining critical cold temperature of tea leaves

    Directory of Open Access Journals (Sweden)

    Yongzong Lu

    2016-12-01

    Full Text Available Critical cold temperature is one of the most crucial control factors for crop frost protection. Tea leaf's capacitance has a significant response to cold injury and appears as a peak response to a typical low temperature which is the critical temperature. However, the testing system is complex and inconvenient. In view of these, a tea leaf's critical temperature detector based on capacitance measurement module was designed and developed to measure accurately and conveniently the capacitance. Software was also designed to measure parameters, record data, query data as well as data deletion module. The detector utilized the MSP430F149 MCU as the control core and ILI9320TFT as the display module, and its software was compiled by IAR5.3. Capacitance measurement module was the crucial part in the overall design which was based on the principle of oscillator. Based on hardware debugging and stability analysis of capacitance measurement module, it was found that the output voltage of the capacitance measurement circuit is stable with 0.36% average deviation. The relationship between capacitance and 1/Uc2 was found to be linear distribution with the determination coefficient above 0.99. The result indicated that the output voltage of capacitance measurement module well corresponded to the change in value of the capacitance. The measurement error of the circuit was also within the required range of 0 to 100 pF which meets the requirement of tea leaf's capacitance. Keywords: Tea leaves, Critical cold temperature, Capacitance peak response, Frost protection, Detector

  3. Measurement of gas-liquid two-phase flow in micro-pipes by a capacitance sensor.

    Science.gov (United States)

    Ji, Haifeng; Li, Huajun; Huang, Zhiyao; Wang, Baoliang; Li, Haiqing

    2014-11-26

    A capacitance measurement system is developed for the measurement of gas-liquid two-phase flow in glass micro-pipes with inner diameters of 3.96, 2.65 and 1.56 mm, respectively. As a typical flow regime in a micro-pipe two-phase flow system, slug flow is chosen for this investigation. A capacitance sensor is designed and a high-resolution and high-speed capacitance measurement circuit is used to measure the small capacitance signals based on the differential sampling method. The performance and feasibility of the capacitance method are investigated and discussed. The capacitance signal is analyzed, which can reflect the voidage variation of two-phase flow. The gas slug velocity is determined through a cross-correlation technique using two identical capacitance sensors. The simulation and experimental results show that the presented capacitance measurement system is successful. Research work also verifies that the capacitance sensor is an effective method for the measurement of gas liquid two-phase flow parameters in micro-pipes.

  4. The effects of deep level traps on the electrical properties of semi-insulating CdZnTe

    Energy Technology Data Exchange (ETDEWEB)

    Zha, Gangqiang; Yang, Jian; Xu, Lingyan; Feng, Tao; Wang, Ning; Jie, Wanqi [State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi' an (China)

    2014-01-28

    Deep level traps have considerable effects on the electrical properties and radiation detection performance of high resistivity CdZnTe. A deep-trap model for high resistivity CdZnTe was proposed in this paper. The high resistivity mechanism and the electrical properties were analyzed based on this model. High resistivity CdZnTe with high trap ionization energy E{sub t} can withstand high bias voltages. The leakage current is dependent on both the deep traps and the shallow impurities. The performance of a CdZnTe radiation detector will deteriorate at low temperatures, and the way in which sub-bandgap light excitation could improve the low temperature performance can be explained using the deep trap model.

  5. Electric field theory and the fallacy of void capacitance

    DEFF Research Database (Denmark)

    McAllister, Iain Wilson

    1991-01-01

    The concept of the capacitance of a gaseous void is discussed as applied to electrical insulation science. The most pertinent aspect of the capacitance definition is that of reference to a single-valued potential difference between surfaces. This implies that these surfaces must be surfaces...

  6. Numerical investigation of high level nuclear waste disposal in deep anisotropic geologic repositories

    KAUST Repository

    Salama, Amgad; El Amin, Mohamed F.; Sun, Shuyu

    2015-01-01

    One of the techniques that have been proposed to dispose high level nuclear waste (HLW) has been to bury them in deep geologic formations, which offer relatively enough space to accommodate the large volume of HLW accumulated over the years since

  7. A microfabricated fringing field capacitive pH sensor with an integrated readout circuit

    International Nuclear Information System (INIS)

    Arefin, Md Shamsul; Redoute, Jean-Michel; Rasit Yuce, Mehmet; Bulut Coskun, M.; Alan, Tuncay; Neild, Adrian

    2014-01-01

    This work presents a microfabricated fringe-field capacitive pH sensor using interdigitated electrodes and an integrated modulation-based readout circuit. The changes in capacitance of the sensor result from the permittivity changes due to pH variations and are converted to frequency shifts using a crossed-coupled voltage controlled oscillator readout circuit. The shift in resonant frequency of the readout circuit is 30.96 MHz for a change in pH of 1.0–5.0. The sensor can be used for the measurement of low pH levels, such as gastric acid, and can be integrated with electronic pills. The measurement results show high repeatability, low noise, and a stable output.

  8. A microfabricated fringing field capacitive pH sensor with an integrated readout circuit

    Energy Technology Data Exchange (ETDEWEB)

    Arefin, Md Shamsul, E-mail: md.arefin@monash.edu; Redoute, Jean-Michel; Rasit Yuce, Mehmet [Electrical and Computer Systems Engineering, Monash University, Melbourne (Australia); Bulut Coskun, M.; Alan, Tuncay; Neild, Adrian [Mechanical and Aerospace Engineering, Monash University, Melbourne (Australia)

    2014-06-02

    This work presents a microfabricated fringe-field capacitive pH sensor using interdigitated electrodes and an integrated modulation-based readout circuit. The changes in capacitance of the sensor result from the permittivity changes due to pH variations and are converted to frequency shifts using a crossed-coupled voltage controlled oscillator readout circuit. The shift in resonant frequency of the readout circuit is 30.96 MHz for a change in pH of 1.0–5.0. The sensor can be used for the measurement of low pH levels, such as gastric acid, and can be integrated with electronic pills. The measurement results show high repeatability, low noise, and a stable output.

  9. Capacitive Coupling in Double-Circuit Transmission Lines

    Directory of Open Access Journals (Sweden)

    Zdenka Benesova

    2004-01-01

    Full Text Available The paper describes an algorithm for calculation of capacitances and charges on conductors in systems with earth wires and in double-circuit overhead lines with respect to phase arrangement. A balanced voltage system is considered. A suitable transposition of individual conductors enables to reduce the electric and magnetic fields in vicinity of overhead lines and to limit the inductive and capacitive linkage. The procedure is illustrated on examples the results of which lead to particular recommendations for designers.

  10. Transparent Flexible Active Faraday Cage Enables In Vivo Capacitance Measurement in Assembled Microsensor.

    Science.gov (United States)

    Ahmadi, Mahdi; Rajamani, Rajesh; Sezen, Serdar

    2017-10-01

    Capacitive micro-sensors such as accelerometers, gyroscopes and pressure sensors are increasingly used in the modern electronic world. However, the in vivo use of capacitive sensing for measurement of pressure or other variables inside a human body suffers from significant errors due to stray capacitance. This paper proposes a solution consisting of a transparent thin flexible Faraday cage that surrounds the sensor. By supplying the active sensing voltage simultaneously to the deformable electrode of the capacitive sensor and to the Faraday cage, the stray capacitance during in vivo measurements can be largely eliminated. Due to the transparency of the Faraday cage, the top and bottom portions of a capacitive sensor can be accurately aligned and assembled together. Experimental results presented in the paper show that stray capacitance is reduced by a factor of 10 by the Faraday cage, when the sensor is subjected to a full immersion in water.

  11. An integrated energy-efficient capacitive sensor digital interface circuit

    KAUST Repository

    Omran, Hesham

    2014-06-19

    In this paper, we propose an energy-efficient 13-bit capacitive sensor interface circuit. The proposed design fully relies on successive approximation algorithm, which eliminates the need for oversampling and digital decimation filtering, and thus low-power consumption is achieved. The proposed architecture employs a charge amplifier stage to acheive parasitic insensitive operation and fine absolute resolution. Moreover, the output code is not affected by offset voltages or charge injection. The successive approximation algorithm is implemented in the capacitance-domain using a coarse-fine programmable capacitor array, which allows digitizing wide capacitance range in compact area. Analysis for the maximum achievable resolution due to mismatch is provided. The proposed design is insensitive to any reference voltage or current which translates to low temperature sensitivity. The operation of a prototype fabricated in a standard CMOS technology is experimentally verified using both on-chip and off-chip capacitive sensors. Compared to similar prior work, the fabricated prototype achieves and excellent energy efficiency of 34 pJ/step.

  12. Concentration Fluctuations and Capacitive Response in Dense Ionic Solutions.

    Science.gov (United States)

    Uralcan, Betul; Aksay, Ilhan A; Debenedetti, Pablo G; Limmer, David T

    2016-07-07

    We use molecular dynamics simulations in a constant potential ensemble to study the effects of solution composition on the electrochemical response of a double layer capacitor. We find that the capacitance first increases with ion concentration following its expected ideal solution behavior but decreases upon approaching a pure ionic liquid in agreement with recent experimental observations. The nonmonotonic behavior of the capacitance as a function of ion concentration results from the competition between the independent motion of solvated ions in the dilute regime and solvation fluctuations in the concentrated regime. Mirroring the capacitance, we find that the characteristic decay length of charge density correlations away from the electrode is also nonmonotonic. The correlation length first decreases with ion concentration as a result of better electrostatic screening but increases with ion concentration as a result of enhanced steric interactions. When charge fluctuations induced by correlated ion-solvent fluctuations are large relative to those induced by the pure ionic liquid, such capacitive behavior is expected to be generic.

  13. Conjugate Image Theory Applied on Capacitive Wireless Power Transfer

    Directory of Open Access Journals (Sweden)

    Ben Minnaert

    2017-01-01

    Full Text Available Wireless power transfer using a magnetic field through inductive coupling is steadily entering the market in a broad range of applications. However, for certain applications, capacitive wireless power transfer using electric coupling might be preferable. In order to obtain a maximum power transfer efficiency, an optimal compensation network must be designed at the input and output ports of the capacitive wireless link. In this work, the conjugate image theory is applied to determine this optimal network as a function of the characteristics of the capacitive wireless link, as well for the series as for the parallel topology. The results are compared with the inductive power transfer system. Introduction of a new concept, the coupling function, enables the description of the compensation network of both an inductive and a capacitive system in two elegant equations, valid for the series and the parallel topology. This approach allows better understanding of the fundamentals of the wireless power transfer link, necessary for the design of an efficient system.

  14. Constraints on sea level during the Pliocene: Records from the deep Pacific Ocean

    Science.gov (United States)

    Woodard, S. C.; Rosenthal, Y.; Miller, K. G.; Wright, J. D.; Chiu, B. K.

    2013-12-01

    To reconstruct sea level during the transition from peak late Pliocene warmth (~3.15 Ma) to the onset of N. Hemisphere glaciation (~2.75 Ma), we generated high resolution stable isotope (δ18O, δ13C) and trace metal (Mg/Ca) records using benthic foraminifera, Uvigerina sp., from northwest Pacific ODP Site 1208 (3350 m water depth). During the peak late Pliocene warmth Mg/Ca-derived temperature records indicate deep Pacific interglacial temperatures were not significantly warmer (+0.6 ×0.8°C) than modern and glacial temperatures were near freezing similar to the LGM. In contrast, the deep N. Atlantic (Site 607) was apparently ~3°C warmer than the modern during both Pliocene glacial and interglacial periods (Sosdian and Rosenthal, 2009), based on the Mg/Ca of P. wuellerstorfi, which may be influenced by carbonate ion effect (Elderfield et al., 2009 and refs therein). δ18O records indicate a significant long-term increase in benthic δ18O in both the N. Atlantic and N. Pacific, although the rate of increase (Δδ18O) in the N. Atlantic is approximately 3x that of the N. Pacific (Site 1208), based on least squares regressions of all glacial-interglacial data. The discrepancy in the Δδ18O between the two basins is explained by Mg/Ca-derived temperature records. Results from Site 1208 show that the deep Pacific experienced no long-term cooling over the period 3.15-2.7 Ma when the deep N. Atlantic cooled by ~2.5°C on average. The relatively stable Pacific deep-water record provides the more reliable reconstructions of sea-level changes. From 3.15-2.7 Ma, Pacific δ18O data records an average increase of ~0.19× 0.08 per mil implying a sea level drop of 19 m × 8 m. After correcting the N. Atlantic record for temperature, we find the long term δ18O change from 3.15-2.7 Ma is ~0.23×0.1 per mil which equates to a peak of 23 m × 10 m. Our estimates are further corroborated by foraminiferal calcite δ18O recorded during Pliocene peak interglacials KM3 and G17. The

  15. Improving accuracy of electrochemical capacitance and solvation energetics in first-principles calculations

    Science.gov (United States)

    Sundararaman, Ravishankar; Letchworth-Weaver, Kendra; Schwarz, Kathleen A.

    2018-04-01

    Reliable first-principles calculations of electrochemical processes require accurate prediction of the interfacial capacitance, a challenge for current computationally efficient continuum solvation methodologies. We develop a model for the double layer of a metallic electrode that reproduces the features of the experimental capacitance of Ag(100) in a non-adsorbing, aqueous electrolyte, including a broad hump in the capacitance near the potential of zero charge and a dip in the capacitance under conditions of low ionic strength. Using this model, we identify the necessary characteristics of a solvation model suitable for first-principles electrochemistry of metal surfaces in non-adsorbing, aqueous electrolytes: dielectric and ionic nonlinearity, and a dielectric-only region at the interface. The dielectric nonlinearity, caused by the saturation of dipole rotational response in water, creates the capacitance hump, while ionic nonlinearity, caused by the compactness of the diffuse layer, generates the capacitance dip seen at low ionic strength. We show that none of the previously developed solvation models simultaneously meet all these criteria. We design the nonlinear electrochemical soft-sphere solvation model which both captures the capacitance features observed experimentally and serves as a general-purpose continuum solvation model.

  16. Contribution of Dielectric Screening to the Total Capacitance of Few-Layer Graphene Electrodes.

    Science.gov (United States)

    Zhan, Cheng; Jiang, De-en

    2016-03-03

    We apply joint density functional theory (JDFT), which treats the electrode/electrolyte interface self-consistently, to an electric double-layer capacitor (EDLC) based on few-layer graphene electrodes. The JDFT approach allows us to quantify a third contribution to the total capacitance beyond quantum capacitance (CQ) and EDL capacitance (CEDL). This contribution arises from the dielectric screening of the electric field by the surface of the few-layer graphene electrode, and we therefore term it the dielectric capacitance (CDielec). We find that CDielec becomes significant in affecting the total capacitance when the number of graphene layers in the electrode is more than three. Our investigation sheds new light on the significance of the electrode dielectric screening on the capacitance of few-layer graphene electrodes.

  17. Development of an Intelligent Capacitive Mass Sensor Based on Co-axial Cylindrical Capacitor

    Directory of Open Access Journals (Sweden)

    Amir ABU AL AISH

    2009-06-01

    Full Text Available The paper presents a linear, robust and intelligent capacitive mass sensor made of a co-axial cylindrical capacitor. It is designed such that the mass under measurement is directly proportional to the capacitance of the sensor. The average value of the output voltage of a capacitance to voltage converter is proportional to the capacitance of the sensor. The output of the converter is measured and displayed, as mass, with the help of microcontroller. The results are free from the effect of stray capacitances which cause errors at low values of capacitances. Developed sensor is linear, free from errors due to temperature and highly flexible in design. The proto-type of the mass sensor can weigh up to 4 kilogram only.

  18. Electrochemical and Capacitive Properties of Carbon Dots/Reduced Graphene Oxide Supercapacitors.

    Science.gov (United States)

    Dang, Yong-Qiang; Ren, Shao-Zhao; Liu, Guoyang; Cai, Jiangtao; Zhang, Yating; Qiu, Jieshan

    2016-11-14

    There is much recent interest in graphene-based composite electrode materials because of their excellent mechanical strengths, high electron mobilities, and large specific surface areas. These materials are good candidates for applications in supercapacitors. In this work, a new graphene-based electrode material for supercapacitors was fabricated by anchoring carbon dots (CDs) on reduced graphene oxide (rGO). The capacitive properties of electrodes in aqueous electrolytes were systematically studied by galvanostatic charge-discharge measurements, cyclic voltammetry, and electrochemical impedance spectroscopy. The capacitance of rGO was improved when an appropriate amount of CDs were added to the material. The CD/rGO electrode exhibited a good reversibility, excellent rate capability, fast charge transfer, and high specific capacitance in 1 M H₂SO₄. Its capacitance was as high as 211.9 F/g at a current density of 0.5 A/g. This capacitance was 74.3% higher than that of a pristine rGO electrode (121.6 F/g), and the capacitance of the CD/rGO electrode retained 92.8% of its original value after 1000 cycles at a CDs-to-rGO ratio of 5:1.

  19. Electrochemical and Capacitive Properties of Carbon Dots/Reduced Graphene Oxide Supercapacitors

    Directory of Open Access Journals (Sweden)

    Yong-Qiang Dang

    2016-11-01

    Full Text Available There is much recent interest in graphene-based composite electrode materials because of their excellent mechanical strengths, high electron mobilities, and large specific surface areas. These materials are good candidates for applications in supercapacitors. In this work, a new graphene-based electrode material for supercapacitors was fabricated by anchoring carbon dots (CDs on reduced graphene oxide (rGO. The capacitive properties of electrodes in aqueous electrolytes were systematically studied by galvanostatic charge-discharge measurements, cyclic voltammetry, and electrochemical impedance spectroscopy. The capacitance of rGO was improved when an appropriate amount of CDs were added to the material. The CD/rGO electrode exhibited a good reversibility, excellent rate capability, fast charge transfer, and high specific capacitance in 1 M H2SO4. Its capacitance was as high as 211.9 F/g at a current density of 0.5 A/g. This capacitance was 74.3% higher than that of a pristine rGO electrode (121.6 F/g, and the capacitance of the CD/rGO electrode retained 92.8% of its original value after 1000 cycles at a CDs-to-rGO ratio of 5:1.

  20. Capacitive sensing of droplets for microfluidic devices based on thermocapillary actuation.

    Science.gov (United States)

    Chen, Jian Z; Darhuber, Anton A; Troian, Sandra M; Wagner, Sigurd

    2004-10-01

    The design and performance of a miniaturized coplanar capacitive sensor is presented whose electrode arrays can also function as resistive microheaters for thermocapillary actuation of liquid films and droplets. Optimal compromise between large capacitive signal and high spatial resolution is obtained for electrode widths comparable to the liquid film thickness measured, in agreement with supporting numerical simulations which include mutual capacitance effects. An interdigitated, variable width design, allowing for wider central electrodes, increases the capacitive signal for liquid structures with non-uniform height profiles. The capacitive resolution and time response of the current design is approximately 0.03 pF and 10 ms, respectively, which makes possible a number of sensing functions for nanoliter droplets. These include detection of droplet position, size, composition or percentage water uptake for hygroscopic liquids. Its rapid response time allows measurements of the rate of mass loss in evaporating droplets.

  1. Calculating and optimizing inter-electrode capacitances of charge division microchannel plate detectors

    Energy Technology Data Exchange (ETDEWEB)

    Xing, Yan [Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Chen, Bo, E-mail: chenb@ciomp.ac.cn [Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 (China); Zhang, Hong-Ji; Wang, Hai-Feng; He, Ling-Ping [Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 (China); Jin, Fang-Yuan [Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 (China); University of Chinese Academy of Sciences, Beijing 100049 (China)

    2016-04-01

    Based on the principle of charge division microchannel plate detectors, the inter-electrode capacitances of charge division anodes which are related to electronic noise of the charge sensitive amplifier and crosstalk effect of the anode are presented. Under all the requirements of charge division microchannel plate detectors such as the imaging linearity and spatial resolution, decreasing the inter-electrode capacitances is one way to improve the imaging performance. In this paper, we illustrate the simulation process of calculating the inter-electrode capacitances. Moreover, a Wedge and Strip (WSZ) anode is fabricated with the picosecond laser micromachining process. Comparing the simulated capacitances and measured capacitances, the three-dimensional finite element method is proved to be valid. Furthermore, by adjusting the design parameters of the anode, the effects of the substrate permittivity, insulation width and the size of pitch on the inter-electrode capacitances have been analysed. The structure of the charge division anode has been optimized based on the simulation data.

  2. Capacitive sensing of droplets for microfluidic devices based on thermocapillary actuation

    OpenAIRE

    Chen, Jian Z.; Darhuber, Anton A.; Troian, Sandra M.; Wagner, Sigurd

    2004-01-01

    The design and performance of a miniaturized coplanar capacitive sensor is presented whose electrode arrays can also function as resistive microheaters for thermocapillary actuation of liquid films and droplets. Optimal compromise between large capacitive signal and high spatial resolution is obtained for electrode widths comparable to the liquid film thickness measured, in agreement with supporting numerical simulations which include mutual capacitance effects. An interdigitated, variable wi...

  3. Subgap time of flight: A spectroscopic study of deep levels in semi-insulating CdTe:Cl

    Energy Technology Data Exchange (ETDEWEB)

    Pousset, J.; Farella, I.; Cola, A., E-mail: adriano.cola@le.imm.cnr.it [Institute for Microelectronics and Microsystems—Unit of Lecce, National Council of Research (IMM/CNR), Lecce I-73100 (Italy); Gambino, S. [Dipartimento di Matematica e Fisica “Ennio De Giorgi,” Università del Salento, Lecce I-73100 (Italy); CNR NANOTEC—Istituto di Nanotecnologia, Polo di Nanotecnologia c/o Campus Ecotekne, via Monteroni, 73100 Lecce (Italy)

    2016-03-14

    We report on a study of deep levels in semi-insulating CdTe:Cl by means of a time-of-flight spectral approach. By varying the wavelength of a pulsed optical source within the CdTe energy gap, transitions to/from localized levels generate free carriers which are analysed through the induced photocurrent transients. Both acceptor-like centers, related to the A-center, and a midgap level, 0.725 eV from the valence band, have been detected. The midgap level is close to the Fermi level and is possibly a recombination center responsible for the compensation mechanism. When the irradiance is varied, either linear or quadratic dependence of the electron and hole collected charge are observed, depending on the dominant optical transitions. The analysis discloses the potentiality of such a novel approach exploitable in the field of photorefractive materials as well as for deep levels spectroscopy.

  4. Subgap time of flight: A spectroscopic study of deep levels in semi-insulating CdTe:Cl

    International Nuclear Information System (INIS)

    Pousset, J.; Farella, I.; Cola, A.; Gambino, S.

    2016-01-01

    We report on a study of deep levels in semi-insulating CdTe:Cl by means of a time-of-flight spectral approach. By varying the wavelength of a pulsed optical source within the CdTe energy gap, transitions to/from localized levels generate free carriers which are analysed through the induced photocurrent transients. Both acceptor-like centers, related to the A-center, and a midgap level, 0.725 eV from the valence band, have been detected. The midgap level is close to the Fermi level and is possibly a recombination center responsible for the compensation mechanism. When the irradiance is varied, either linear or quadratic dependence of the electron and hole collected charge are observed, depending on the dominant optical transitions. The analysis discloses the potentiality of such a novel approach exploitable in the field of photorefractive materials as well as for deep levels spectroscopy.

  5. AlxGa1--xN/GaN band offsets determined by deep-level emission

    International Nuclear Information System (INIS)

    Hang, D. R.; Chen, C. H.; Chen, Y. F.; Jiang, H. X.; Lin, J. Y.

    2001-01-01

    We present studies of the compositional dependence of the optical properties of Al x Ga 1-x N(0 x Ga 1-x N. As aluminum concentration increases, the color of the band changes from yellow (2.2 eV) to blue (2.6 eV). The shift was less than that of the band gap. Together with previously published studies, it implies that the deep acceptor level is pinned to a common reference level to both materials, thus the deep level responsible for the yellow emission is used as a common reference level to determine the band alignment in Al x Ga 1-x N/GaN heterojunctions. Combining with the near-band-edge modulation spectra, the estimated ratio of conduction-to-valence band discontinuity is 65:35. Our results are close to the values obtained from PL measurements on Al 0.14 Ga 0.86 N/GaN quantum wells and those calculated by linear muffin-tin orbital method and linearized augmented plane wave method. copyright 2001 American Institute of Physics

  6. The relationship between the deep-level structure in crust and brewing of strong earthquakes in Xingtai area

    Science.gov (United States)

    Xiao, Lan-Xi; Zhu, Yuan-Qing; Zhang, Shao-Quan; Liu, Xu; Guo, Yu

    1999-11-01

    In this paper, crust medium is treated as Maxwell medium, and crust model includes hard inclusion, soft inclusion, deep-level fault. The stress concentration and its evolution with time are obtained by using three-dimensional finite element method and differential method. The conclusions are draw as follows: (1) The average stress concentration and maximum shear stress concentration caused by non-heterogeneous of crust are very high in hard inclusion and around the deep fault. With the time passing by, the concentration of average stress in the model gradually trends to uniform. At the same time, the concentration of maximum shear stress in hard inclusion increases gradually. This character is favorable to transfer shear strain energy from soft inclusion to hard inclusion. (2) When the upper mantle beneath the inclusion upheave at a certain velocity of 1 cm/a, the changes of average stress concentration with time become complex, and the boundary of the hard and soft inclusion become unconspicuous, but the maximum shear stress concentration increases much more in the hard inclusion with time at a higher velocity. This feature make for transformation of energy from the soft inclusion to the hard inclusion. (3) The changes of average stress concentration and maximum shear stress concentration with time around the deep-level fault result in further accumulation of maximum shear stress concentration and finally cause the deep-level fault instable and accelerated creep along fault direction. (4) The changes of vertical displacement on the surface of the model, which is caused by the accelerated creep of the deep-level fault, is similar to that of the observation data before Xingtai strong earthquake.

  7. Resolving the EH6/7 level in 4H-SiC by Laplace-transform deep level transient spectroscopy

    International Nuclear Information System (INIS)

    Alfieri, G.; Kimoto, T.

    2013-01-01

    We show that Laplace transform deep level transient spectroscopy (LDLTS) is an effective technique for the separation of the overlapping emission rates of the EH 6 and EH 7 levels, which are known to constitute EH 6/7 , a mid-gap level in n-type 4H-SiC. The analysis of the electron irradiation dose, electric field dependence, and the effects of carbon interstitials injection on the emission rates of EH 6 and EH 7 shows that EH 7 is dominant over EH 6 and confirms that their nature is related to a carbon vacancy.

  8. 3D printed biomimetic whisker-based sensor with co-planar capacitive sensing

    NARCIS (Netherlands)

    Delamare, John; Sanders, Remco G.P.; Krijnen, Gijsbertus J.M.

    2016-01-01

    This paper describes the development of a whisker sensor for tactile purposes and which is fabricated by 3D printing. Read-out consists of a capacitive measurement of a co-planar capacitance which is affected by a dielectric that is driven into the electric field of the capacitance. The current

  9. A new recontruction algorithm for use with capacitance-based tomography

    Directory of Open Access Journals (Sweden)

    Ø. Isaksen

    1994-01-01

    Full Text Available A new reconstruction algorithm for use with capacitance-based process tomography is proposed. A numerical simulator, capable of calculating the capacitances for a particular sensor configuration and flow regime is used together with a parameter representation of the dielectric distribution and an optimization algorithm. The algorithm calculates these parameters and hence the dielectric distribution, by minimizing a function defined as a weighted sum of square differences between the measured and estimated capacitances. The method is tested by using both synthetic and experimental data, and the results are compared with results from the commonly used Linear Back Projection (LBP algorithm. The method is capable of obtaining the correct parameter values for all the flow regimes tested, and does provide a better estimate than the LBP method. The method proves to be very promising, and is a step towards quantitative capacitance tomography.

  10. Preparation and electrochemical capacitance performances of super-hydrophilic conducting polyaniline

    Energy Technology Data Exchange (ETDEWEB)

    Li, Xingwei; Li, Xiaohan; Dai, Na; Wang, Gengchao; Wang, Zhun [Shanghai Key Laboratory of Advanced Polymeric Materials, Key Laboratory for Ultrafine Materials of Ministry of Education, School of Materials Science and Engineering, East China University of Science and Technology, Meilong Road 130, Shanghai 200237 (China)

    2010-08-15

    Super-hydrophilic conducting polyaniline was prepared by surface modification of polyaniline using tetraethyl orthosilicate in water/ethanol solution, whereas its conductivity was 4.16 S cm{sup -1} at 25 C. And its electrochemical capacitance performances as an electrode material were evaluated by the cyclic voltammetry and galvanostatic charge/discharge test in 0.1 M H{sub 2}SO{sub 4} aqueous solution. Its initial specific capacitance was 500 F g{sup -1} at a constant current density of 1.5 A g{sup -1}, and the capacitance still reached about 400 F g{sup -1} after 5000 consecutive cycles. Moreover, its capacitance retention ratio was circa 70% with the growth of current densities from 1.5 to 20 A g{sup -1}, indicating excellent rate capability. It would be a promising electrode material for aqueous redox supercapacitors. (author)

  11. Effect of Plasma Membrane Semipermeability in Making the Membrane Electric Double Layer Capacitances Significant.

    Science.gov (United States)

    Sinha, Shayandev; Sachar, Harnoor Singh; Das, Siddhartha

    2018-01-30

    Electric double layers (or EDLs) formed at the membrane-electrolyte interface (MEI) and membrane-cytosol interface (MCI) of a charged lipid bilayer plasma membrane develop finitely large capacitances. However, these EDL capacitances are often much larger than the intrinsic capacitance of the membrane, and all of these capacitances are in series. Consequently, the effect of these EDL capacitances in dictating the overall membrane-EDL effective capacitance C eff becomes negligible. In this paper, we challenge this conventional notion pertaining to the membrane-EDL capacitances. We demonstrate that, on the basis of the system parameters, the EDL capacitance for both the permeable and semipermeable membranes can be small enough to influence C eff . For the semipermeable membranes, however, this lowering of the EDL capacitance can be much larger, ensuring a reduction of C eff by more than 20-25%. Furthermore, for the semipermeable membranes, the reduction in C eff is witnessed over a much larger range of system parameters. We attribute such an occurrence to the highly nonintuitive electrostatic potential distribution associated with the recently discovered phenomena of charge-inversion-like electrostatics and the attainment of a positive zeta potential at the MCI for charged semipermeable membranes. We anticipate that our findings will impact the quantification and the identification of a large number of biophysical phenomena that are probed by measuring the plasma membrane capacitance.

  12. Capacitive properties of PANI/MnO2 synthesized via simultaneous-oxidation route

    International Nuclear Information System (INIS)

    Zhang Jie; Shu Dong; Zhang Tianren; Chen Hongyu; Zhao Haimin; Wang Yongsheng; Sun Zhenjie; Tang Shaoqing; Fang Xueming; Cao Xiufang

    2012-01-01

    Highlights: ► PANI/MnO 2 composite was synthesized by the simultaneous-oxidation route. ► Good contact in inter-molecule level between PANI and MnO 2 improves the conductivity. ► The separation between PANI and MnO 2 prevents the aggregation of nano-composite. ► The maximum specific capacitance of the PANI/MnO 2 electrode is 320 F/g. ► The as-prepared PANI/MnO 2 exhibits excellent cycle stability of 84% capacitance retention after 10,000 cycles. - Abstract: Polyaniline (PANI) and manganese dioxide (MnO 2 ) composite (PANI/MnO 2 ) was synthesized via a simultaneous-oxidation route. In this route, all reactants were dispersed homogenously in precursor solution and existed as ions and molecules, and involved reactions of ions and molecules generating PANI and MnO 2 simultaneously. In this way, PANI molecule and MnO 2 molecule contact each other and arrange alternately in the composite. The inter-molecule contact improves the conductivity of the composite. The alternative arrangement of PANI molecules and MnO 2 molecules separating each other, and prevents the aggregation of PANI and cluster of MnO 2 so as to decrease the particle size of the composite. The morphology, structure, porous and capacitive properties are characterized by scanning electron microscopy, X-ray diffraction spectroscopy, X-ray photoelectron spectroscopy, Branauer–Emmett–Teller test, thermogravimetric analysis, Fourier transform infrared spectroscopy, cyclic voltammetry, charge–discharge test and the electrochemical impedance measurements. The results show that MnO 2 is predominant in the PANI/MnO 2 composite and the composite exhibits larger specific surface area than pure MnO 2 . The maximum specific capacitance of the composite electrode reaches up to 320 F/g by charge–discharge test, 1.56 times higher than that of MnO 2 (125 F/g). The specific capacitance retains approximately 84% of the initial value after 10,000 cycles, indicating the good cycle stability.

  13. Nonlinear dynamics of capacitive charging and desalination by porous electrodes

    NARCIS (Netherlands)

    Biesheuvel, P.M.; Bazant, M.Z.

    2010-01-01

    The rapid and efficient exchange of ions between porous electrodes and aqueous solutions is important in many applications, such as electrical energy storage by supercapacitors, water desalination and purification by capacitive deionization, and capacitive extraction of renewable energy from a

  14. A Review of High Voltage Drive Amplifiers for Capacitive Actuators

    DEFF Research Database (Denmark)

    Huang, Lina; Zhang, Zhe; Andersen, Michael A. E.

    2012-01-01

    This paper gives an overview of the high voltage amplifiers, which are used to drive capacitive actuators. The amplifiers for both piezoelectric and DEAP (dielectric electroactive polymer) actuator are discussed. The suitable topologies for driving capacitive actuators are illustrated in detail...

  15. Capacitance Regression Modelling Analysis on Latex from Selected Rubber Tree Clones

    International Nuclear Information System (INIS)

    Rosli, A D; Baharudin, R; Hashim, H; Khairuzzaman, N A; Mohd Sampian, A F; Abdullah, N E; Kamaru'zzaman, M; Sulaiman, M S

    2015-01-01

    This paper investigates the capacitance regression modelling performance of latex for various rubber tree clones, namely clone 2002, 2008, 2014 and 3001. Conventionally, the rubber tree clones identification are based on observation towards tree features such as shape of leaf, trunk, branching habit and pattern of seeds texture. The former method requires expert persons and very time-consuming. Currently, there is no sensing device based on electrical properties that can be employed to measure different clones from latex samples. Hence, with a hypothesis that the dielectric constant of each clone varies, this paper discusses the development of a capacitance sensor via Capacitance Comparison Bridge (known as capacitance sensor) to measure an output voltage of different latex samples. The proposed sensor is initially tested with 30ml of latex sample prior to gradually addition of dilution water. The output voltage and capacitance obtained from the test are recorded and analyzed using Simple Linear Regression (SLR) model. This work outcome infers that latex clone of 2002 has produced the highest and reliable linear regression line with determination coefficient of 91.24%. In addition, the study also found that the capacitive elements in latex samples deteriorate if it is diluted with higher volume of water. (paper)

  16. TECHNICAL AND ECONOMIC EVALUATION OF OPTIMAL VOLTAGE LEVEL FOR THE POWER SUPPLY OF DEEP MINE OPERATING HORIZONS

    OpenAIRE

    Shkrabets, F. P.; Ostapchuk, O. V.; Kozhevnikov, A. V.; Akulov, A. V.

    2015-01-01

    The most perspective option for possible deep mine power supply is the one with the deep input of 35 kV voltage by installing of underground 35kV/6 kV substation. This option is caused by the expected level of electrical loads, provided by mine development, the power consumers’ deep layout (considering the distance from the source to the shaft on the surface and from the shaft to the underground substation chamber) and primary and the most responsible power consumers (blind shaft lifting devi...

  17. Capacitive Imaging For Skin Characterization and Solvent Penetration

    OpenAIRE

    Xiao, P; Zhang, X; Bontozoglou, C

    2016-01-01

    Capacitive contact imaging has shown potential in measuring skin properties including hydration, micro relief analysis, as well as solvent penetration measurements . Through calibration we can also measure the absolute permittivity of the skin, and from absolute permittivity we then work out the absolute water content (or solvent content) in skin. In this paper, we present our latest study of capacitive contact imaging for skin characterization, i.e. skin hydration and skin damages etc. The r...

  18. Introducing radiality constraints in capacitated location-routing problems

    Directory of Open Access Journals (Sweden)

    Eliana Mirledy Toro Ocampo

    2017-03-01

    Full Text Available In this paper, we introduce a unified mathematical formulation for the Capacitated Vehicle Routing Problem (CVRP and for the Capacitated Location Routing Problem (CLRP, adopting radiality constraints in order to guarantee valid routes and eliminate subtours. This idea is inspired by formulations already employed in electric power distribution networks, which requires a radial topology in its operation. The results show that the proposed formulation greatly improves the convergence of the solver.

  19. Dual deep modeling: multi-level modeling with dual potencies and its formalization in F-Logic.

    Science.gov (United States)

    Neumayr, Bernd; Schuetz, Christoph G; Jeusfeld, Manfred A; Schrefl, Michael

    2018-01-01

    An enterprise database contains a global, integrated, and consistent representation of a company's data. Multi-level modeling facilitates the definition and maintenance of such an integrated conceptual data model in a dynamic environment of changing data requirements of diverse applications. Multi-level models transcend the traditional separation of class and object with clabjects as the central modeling primitive, which allows for a more flexible and natural representation of many real-world use cases. In deep instantiation, the number of instantiation levels of a clabject or property is indicated by a single potency. Dual deep modeling (DDM) differentiates between source potency and target potency of a property or association and supports the flexible instantiation and refinement of the property by statements connecting clabjects at different modeling levels. DDM comes with multiple generalization of clabjects, subsetting/specialization of properties, and multi-level cardinality constraints. Examples are presented using a UML-style notation for DDM together with UML class and object diagrams for the representation of two-level user views derived from the multi-level model. Syntax and semantics of DDM are formalized and implemented in F-Logic, supporting the modeler with integrity checks and rich query facilities.

  20. Quantum decrease of capacitance in a nanometer-sized tunnel junction

    Science.gov (United States)

    Untiedt, C.; Saenz, G.; Olivera, B.; Corso, M.; Sabater, C.; Pascual, J. I.

    2013-03-01

    We have studied the capacitance of the tunnel junction defined by the tip and sample of a Scanning Tunnelling Microscope through the measurement of the electrostatic forces and impedance of the junction. A decrease of the capacitance when a tunnel current is present has shown to be a more general phenomenon as previously reported in other systems. On another hand, an unexpected reduction of the capacitance is also observed when increasing the applied voltage above the work function energy of the electrodes to the Field Emission (FE) regime, and the decrease of capacitance due to a single FE-Resonance has been characterized. All these effects should be considered when doing measurements of the electronic characteristics of nanometer-sized electronic devices and have been neglected up to date. Spanish government (FIS2010-21883-C02-01, CONSOLIDER CSD2007-0010), Comunidad Valenciana (ACOMP/2012/127 and PROMETEO/2012/011)

  1. Gas temperature of capacitance spark discharge in air

    International Nuclear Information System (INIS)

    Ono, Ryo; Nifuku, Masaharu; Fujiwara, Shuzo; Horiguchi, Sadashige; Oda, Tetsuji

    2005-01-01

    Capacitance spark discharge has been widely used for studying the ignition of flammable gas caused by electrostatic discharge. In the present study, the gas temperature of capacitance spark discharge is measured. The gas temperature is an important factor in understanding the electrostatic ignition process because it influences the reaction rate of ignition. Spark discharge is generated in air with a pulse duration shorter than 100 ns. The discharge energy is set to 0.03-1 mJ. The rotational and vibrational temperatures of the N 2 molecule are measured using the emission spectrum of the N 2 second positive system. The rotational and vibrational temperatures are estimated to be 500 and 5000 K, respectively, which are independent of the discharge energy. This result indicates that most of the electron energy is consumed in the excitation of vibrational levels of molecules rather than the heating of the gas. The gas temperature after discharge is also measured by laser-induced fluorescence of OH radicals. It is shown that the gas temperature increases after discharge and reaches approximately 1000 K at 3 μs after discharge. Then the temperature decreases at a rate in the range of 8-35 K/μs depending on the discharge energy

  2. A new capacitive/resistive probe method for studying magnetic surfaces

    International Nuclear Information System (INIS)

    Kitajima, Sumio; Takayama, Masakazu; Zama, Tatsuya; Takaya, Kazuhiro; Takeuchi, Nobunao; Watanabe, Hiroshige

    1991-01-01

    A new capacitive/resistive probe method for mapping the magnetic surfaces from resistance or capacitance between a magnetic surface and a vacuum vessel was developed and tested. Those resistances and capacitances can be regarded as components of a simple electrical bridge circuit. This method exploits electrical transient response of the bridge circuit for a square pulse. From equiresistance or equicapacitance points, the magnetic surface structure can be deduced. Measurements on the Tohoku University Heliac, which is a small-size standard heliac, show good agreement with numerical calculations. This method is particularly useful for pulse-operated machines. (author)

  3. Enhanced Capacitance of Hybrid Layered Graphene/Nickel Nanocomposite for Supercapacitors

    Science.gov (United States)

    Mohd Zaid, Norsaadatul Akmal; Idris, Nurul Hayati

    2016-08-01

    In this work, Ni nanoparticles were directly decorated on graphene (G) nanosheets via mechanical ball milling. Based on transmission electron microscopy observations, the Ni nanoparticles were well dispersed and attached to the G nanosheet without any agglomerations. Electrochemical results showed that the capacitance of a G/Ni nanocomposite was 275 F g-1 at a current density of 2 A g-1, which is higher than the capacitance of bare G (145 F g-1) and bare Ni (3 F g-1). The G/Ni electrode also showed superior performance at a high current density, exhibiting a capacitance of 190 F g-1 at a current density of 5 A g-1 and a capacitance of 144 F g-1 at a current density of 10 A g-1. The equivalent series resistance for G/Ni nanocomposites also decreased. The enhanced performance of this hybrid supercapacitor is best described by the synergistic effect, i.e. dual charge-storage mechanism, which is demonstrated by electrical double layer and pseudocapacitance materials. Moreover, a high specific surface area and electrical conductivity of the materials enhanced the capacitance. These results indicate that the G/Ni nanocomposite is a potential supercapacitor.

  4. Detecting size and shape of bodies capacitatively

    International Nuclear Information System (INIS)

    Walton, H.

    1980-01-01

    The size and shape of a body is determined by rolling it between the plates of capacitors and measuring the capacitance changes. A capacitor comprising two parallel, spaced wires inclined to the rolling direction and above and below the rolling body scans sections of the body along its longitudinal axis, another determines the body's lengths and a third comprising two non-parallel wires determines the position of the body. The capacitance changes are compared with those produced by a body of known size and shape so that the size and shape of the body can be determined. (author)

  5. Classic and Quantum Capacitances in Bernal Bilayer and Trilayer Graphene Field Effect Transistor

    Directory of Open Access Journals (Sweden)

    Hatef Sadeghi

    2013-01-01

    Full Text Available Our focus in this study is on characterizing the capacitance voltage (C-V behavior of Bernal stacking bilayer graphene (BG and trilayer graphene (TG as the channel of FET devices. The analytical models of quantum capacitance (QC of BG and TG are presented. Although QC is smaller than the classic capacitance in conventional devices, its contribution to the total metal oxide semiconductor capacitor in graphene-based FET devices becomes significant in the nanoscale. Our calculation shows that QC increases with gate voltage in both BG and TG and decreases with temperature with some fluctuations. However, in bilayer graphene the fluctuation is higher due to its tunable band structure with external electric fields. In similar temperature and size, QC in metal oxide BG is higher than metal oxide TG configuration. Moreover, in both BG and TG, total capacitance is more affected by classic capacitance as the distance between gate electrode and channel increases. However, QC is more dominant when the channel becomes thinner into the nanoscale, and therefore we mostly deal with quantum capacitance in top gate in contrast with bottom gate that the classic capacitance is dominant.

  6. Contamination of current-clamp measurement of neuron capacitance by voltage-dependent phenomena

    Science.gov (United States)

    White, William E.

    2013-01-01

    Measuring neuron capacitance is important for morphological description, conductance characterization, and neuron modeling. One method to estimate capacitance is to inject current pulses into a neuron and fit the resulting changes in membrane potential with multiple exponentials; if the neuron is purely passive, the amplitude and time constant of the slowest exponential give neuron capacitance (Major G, Evans JD, Jack JJ. Biophys J 65: 423–449, 1993). Golowasch et al. (Golowasch J, Thomas G, Taylor AL, Patel A, Pineda A, Khalil C, Nadim F. J Neurophysiol 102: 2161–2175, 2009) have shown that this is the best method for measuring the capacitance of nonisopotential (i.e., most) neurons. However, prior work has not tested for, or examined how much error would be introduced by, slow voltage-dependent phenomena possibly present at the membrane potentials typically used in such work. We investigated this issue in lobster (Panulirus interruptus) stomatogastric neurons by performing current clamp-based capacitance measurements at multiple membrane potentials. A slow, voltage-dependent phenomenon consistent with residual voltage-dependent conductances was present at all tested membrane potentials (−95 to −35 mV). This phenomenon was the slowest component of the neuron's voltage response, and failure to recognize and exclude it would lead to capacitance overestimates of several hundredfold. Most methods of estimating capacitance depend on the absence of voltage-dependent phenomena. Our demonstration that such phenomena make nonnegligible contributions to neuron responses even at well-hyperpolarized membrane potentials highlights the critical importance of checking for such phenomena in all work measuring neuron capacitance. We show here how to identify such phenomena and minimize their contaminating influence. PMID:23576698

  7. Lightweight linear alternators with and without capacitive tuning

    Science.gov (United States)

    Niedra, Janis M.

    1993-06-01

    Permanent magnet excited linear alternators rated tens of kW and coupled to free-piston Stirling engines are presently viewed as promising candidates for long term generation of electric power in both space and terrestrial applications. Series capacitive cancellation of the internal inductive reactance of such alternators was considered a viable way to both increase power extraction and to suppress unstable modes of the thermodynamic oscillation. Idealized toroidal and cylindrical alternator geometries are used for a comparative study of the issues of specific mass and capacitive tuning, subject to stability criteria. The analysis shows that the stator mass of an alternator designed to be capacitively tuned is always greater than the minimum achievable stator mass of an alternator designed with no capacitors, assuming equal utilization of materials ratings and the same frequency and power to a resistive load. This conclusion is not substantially altered when the usually lesser masses of the magnets and of any capacitors are added. Within the reported stability requirements and under circumstances of normal materials ratings, this study finds no clear advantage to capacitive tuning. Comparative plots of the various constituent masses are presented versus the internal power factor taken as a design degree of freedom. The explicit formulas developed for stator core, coil, capacitor, and magnet masses and for the degree of magnet utilization provide useful estimates of scaling effects.

  8. Mechanical strain can switch the sign of quantum capacitance from positive to negative.

    Science.gov (United States)

    Hanlumyuang, Yuranan; Li, Xiaobao; Sharma, Pradeep

    2014-11-14

    Quantum capacitance is a fundamental quantity that can directly reveal many-body interactions among electrons and is expected to play a critical role in nanoelectronics. One of the many tantalizing recent physical revelations about quantum capacitance is that it can possess a negative value, hence allowing for the possibility of enhancing the overall capacitance in some particular material systems beyond the scaling predicted by classical electrostatics. Using detailed quantum mechanical simulations, we found an intriguing result that mechanical strains can tune both signs and values of quantum capacitance. We used a small coaxially gated carbon nanotube as a paradigmatical capacitor system and showed that, for the range of mechanical strain considered, quantum capacitance can be adjusted from very large positive to very large negative values (in the order of plus/minus hundreds of attofarads), compared to the corresponding classical geometric value (0.31035 aF). This finding opens novel avenues in designing quantum capacitance for applications in nanosensors, energy storage, and nanoelectronics.

  9. Current source enhancements in Electrical Impedance Spectroscopy (EIS) to cancel unwanted capacitive effects

    Science.gov (United States)

    Zarafshani, Ali; Bach, Thomas; Chatwin, Chris; Xiang, Liangzhong; Zheng, Bin

    2017-03-01

    Electrical Impedance Spectroscopy (EIS) has emerged as a non-invasive imaging modality to detect and quantify functional or electrical properties related to the suspicious tumors in cancer screening, diagnosis and prognosis assessment. A constraint on EIS systems is that the current excitation system suffers from the effects of stray capacitance having a major impact on the hardware subsystem as the EIS is an ill-posed inverse problem which depends on the noise level in EIS measured data and regularization parameter in the reconstruction algorithm. There is high complexity in the design of stable current sources, with stray capacitance reducing the output impedance and bandwidth of the system. To confront this, we have designed an EIS current source which eliminates the effect of stray capacitance and other impacts of the capacitance via a variable inductance. In this paper, we present a combination of operational CCII based on a generalized impedance converter (OCCII-GIC) with a current source. The aim of this study is to use the EIS system as a biomedical imaging technique, which is effective in the early detection of breast cancer. This article begins with the theoretical description of the EIS structure, current source topologies and proposes a current conveyor in application of a Gyrator to eliminate the current source limitations and its development followed by simulation and experimental results. We demonstrated that the new design could achieve a high output impedance over a 3MHz frequency bandwidth when compared to other types of GIC circuits combined with an improved Howland topology.

  10. Decontamination by replacing soil and soil cover with deep-level soil in flower beds and vacant places in Northern Fukushima Prefecture

    International Nuclear Information System (INIS)

    Sugiura, Hiroyuki; Kawano, Keisuke; Kayama, Yukihiko; Koube, Nobuyuki

    2012-01-01

    Radioactivity decontamination by replacing soil and soil cover with deep-level soil and soil cover in flower beds and a vacant place in Northern Fukushima Prefecture were studied, which experienced radioactive contamination due to the accident at the TEPCO's Fukushima Daiichi Nuclear Power Plant. Radioactivity counting rate 1 cm above the soil surface after replacing surface soil with uncontaminated deep-level soil decreased to 13.7% of the control in gardens. The concentration of radioactive cesium in the cover soil increased after 132 days; however, it decreased in the old surface soil under the cover soil in flower beds. A 10 cm deep-level soil cover placed by heavy machinery decreased the radiation dose rate to 70.8% of the control and radioactivity counting rate to 24.6% in the vacant place. Replacing the radioactively contaminated surface soil and soil cover with a deep-level soil was a reasonable decontamination method for the garden and vacant place because it is quick, cost effective and labour efficient. (author)

  11. Field tests of electric survey using capacitive electrodes; Kyapashita denkyoku wo mochiita denki tansarei

    Energy Technology Data Exchange (ETDEWEB)

    Miyazaki, I; Iseki, S; Kobayashi, T [OYO Corp., Tokyo (Japan)

    1997-10-22

    This paper describes field test results of electric survey using capacitive electrodes. When two metal plates are approached without contacting with the ground and voltage is applied between the plates, current flows in the ground. The metal plates and the ground work as a capacitor. Charges are stored between them. These metal plates having insulation with the ground are called capacitive electrodes. When ac voltage is applied between a pair of capacitors, current flows continuously in the ground without saturating the capacitors. Resistivity of the ground can be determined by measuring the level of current flowing in the ground and the level of potential. As a result of the field tests, it was found that the present method is superior to the conventional method in around ten times. However, to obtain high quality data, water spraying, reduced towing speed at the low resistivity ground such as clay and soil, and grass mowing are required. 3 refs., 5 figs., 1 tab.

  12. The interfacial capacitance of an oxidised polycrystalline gold electrode in an aqueous HClO4 electrolyte

    International Nuclear Information System (INIS)

    Grdeń, M.

    2013-01-01

    The interfacial capacitance of a polycrystalline gold electrode electrochemically oxidised in an aqueous 0.1 M HClO 4 electrolyte has been investigated by means of the electrochemical impedance spectroscopy. From 1.3 to 3 monolayers of Au atoms were oxidised under constant potential conditions and for various oxidation times. The capacitance of the oxidised layers was analysed as a function of the electrode potential and the extent of the surface oxidation. It was found that the interfacial capacitance decreases upon surface oxidation. The components of the interfacial capacitance of the oxidised layer: the double layer capacitance and the capacitance of the oxidised layer; have been separated. The capacitance of the double layer of the oxidised surface was found to be comparable to the capacitance measured for the metallic surface. - Highlights: • The impedance spectra for thin layers of Au oxides/hydroxides were acquired. • Separate determination of the double layer and the oxide capacitances of oxidised Au • The double layer capacitances of oxidised and non-oxidised Au surfaces are comparable

  13. Low Capacitive Inductors for Fast Switching Devices in Active Power Factor Correction Applications

    DEFF Research Database (Denmark)

    Hernandez Botella, Juan Carlos; Petersen, Lars Press; Andersen, Michael A. E.

    2014-01-01

    This paper examines different winding strategies for reduced capacitance inductors in active power factor correction circuits (PFC). The effect of the parasitic capacitance is analyzed from an electro magnetic compatibility (EMI) and efficiency point of views. The purpose of this work is to inves......This paper examines different winding strategies for reduced capacitance inductors in active power factor correction circuits (PFC). The effect of the parasitic capacitance is analyzed from an electro magnetic compatibility (EMI) and efficiency point of views. The purpose of this work...... is to investigate different winding approaches and identify suitable solutions for high switching frequency/high speed transition PFC designs. A low parasitic capacitance PCB based inductor design is proposed to address the challenges imposed by high switching frequency PFC Boost converters....

  14. Development of a Capacitive Ice Sensor to Measure Ice Growth in Real Time

    Directory of Open Access Journals (Sweden)

    Xiang Zhi

    2015-03-01

    Full Text Available This paper presents the development of the capacitive sensor to measure the growth of ice on a fuel pipe surface in real time. The ice sensor consists of pairs of electrodes to detect the change in capacitance and a thermocouple temperature sensor to examine the ice formation situation. In addition, an environmental chamber was specially designed to control the humidity and temperature to simulate the ice formation conditions. From the humidity, a water film is formed on the ice sensor, which results in an increase in capacitance. Ice nucleation occurs, followed by the rapid formation of frost ice that decreases the capacitance suddenly. The capacitance is saturated. The developed ice sensor explains the ice growth providing information about the icing temperature in real time.

  15. Development of a capacitive ice sensor to measure ice growth in real time.

    Science.gov (United States)

    Zhi, Xiang; Cho, Hyo Chang; Wang, Bo; Ahn, Cheol Hee; Moon, Hyeong Soon; Go, Jeung Sang

    2015-03-19

    This paper presents the development of the capacitive sensor to measure the growth of ice on a fuel pipe surface in real time. The ice sensor consists of pairs of electrodes to detect the change in capacitance and a thermocouple temperature sensor to examine the ice formation situation. In addition, an environmental chamber was specially designed to control the humidity and temperature to simulate the ice formation conditions. From the humidity, a water film is formed on the ice sensor, which results in an increase in capacitance. Ice nucleation occurs, followed by the rapid formation of frost ice that decreases the capacitance suddenly. The capacitance is saturated. The developed ice sensor explains the ice growth providing information about the icing temperature in real time.

  16. Development of Pixel Front-End Electronics using Advanced Deep Submicron CMOS Technologies

    CERN Document Server

    Havránek, Miroslav; Dingfelder, Jochen

    The content of this thesis is oriented on the R&D; of microelectronic integrated circuits for processing the signal from particle sensors and partially on the sensors themselves. This work is motivated by ongoing upgrades of the ATLAS Pixel Detector at CERN laboratory and by exploration of new technologies for the future experiments in particle physics. Evolution of technologies for the fabrication of microelectronic circuits follows Moore’s laws. Transistors become smaller and electronic chips reach higher complexity. Apart from this, silicon foundries become more open to smaller customers and often provide non-standard process options. Two new directions in pixel technologies are explored in this thesis: design of pixel electronics using ultra deep submicron (65 nm) CMOS technology and Depleted Monolithic Active Pixel Sensors (DMAPS). An independent project concerning the measurement of pixel capacitance with a dedicated measurement chip is a part of this thesis. Pixel capacitance is one of the key pa...

  17. CMOS capacitive biosensors for highly sensitive biosensing applications.

    Science.gov (United States)

    Chang, An-Yu; Lu, Michael S-C

    2013-01-01

    Magnetic microbeads are widely used in biotechnology and biomedical research for manipulation and detection of cells and biomolecules. Most lab-on-chip systems capable of performing manipulation and detection require external instruments to perform one of the functions, leading to increased size and cost. This work aims at developing an integrated platform to perform these two functions by implementing electromagnetic microcoils and capacitive biosensors on a CMOS (complementary metal oxide semiconductor) chip. Compared to most magnetic-type sensors, our detection method requires no externally applied magnetic fields and the associated fabrication is less complicated. In our experiment, microbeads coated with streptavidin were driven to the sensors located in the center of microcoils with functionalized anti-streptavidin antibody. Detection of a single microbead was successfully demonstrated using a capacitance-to-frequency readout. The average capacitance changes for the experimental and control groups were -5.3 fF and -0.2 fF, respectively.

  18. Micromachined capacitive ultrasonic immersion transducer array

    Science.gov (United States)

    Jin, Xuecheng

    Capacitive micromachined ultrasonic transducers (cMUTs) have emerged as an attractive alternative to conventional piezoelectric ultrasonic transducers. They offer performance advantages of wide bandwidth and sensitivity that have heretofore been attainable. In addition, micromachining technology, which has benefited from the fast-growing microelectronics industry, enables cMUT array fabrication and electronics integration. This thesis describes the design and fabrication of micromachined capacitive ultrasonic immersion transducer arrays. The basic transducer electrical equivalent circuit is derived from Mason's theory. The effects of Lamb waves and Stoneley waves on cross coupling and acoustic losses are discussed. Electrical parasitics such as series resistance and shunt capacitance are also included in the model of the transducer. Transducer fabrication technology is systematically studied. Device dimension control in both vertical and horizontal directions, process alternatives and variations in membrane formation, via etch and cavity sealing, and metalization as well as their impact on transducer performance are summarized. Both 64 and 128 element 1-D array transducers are fabricated. Transducers are characterized in terms of electrical input impedance, bandwidth, sensitivity, dynamic range, impulse response and angular response, and their performance is compared with theoretical simulation. Various schemes for cross coupling reduction is analyzed, implemented, and verified with both experiments and theory. Preliminary results of immersion imaging are presented using 64 elements 1-D array transducers for active source imaging.

  19. CMOS capacitive sensors for lab-on-chip applications a multidisciplinary approach

    CERN Document Server

    Ghafar-Zadeh, Ebrahim

    2010-01-01

    The main components of CMOS capacitive biosensors including sensing electrodes, bio-functionalized sensing layer, interface circuitries and microfluidic packaging are verbosely explained in chapters 2-6 after a brief introduction on CMOS based LoCs in Chapter 1. CMOS Capacitive Sensors for Lab-on-Chip Applications is written in a simple pedagogical way. It emphasises practical aspects of fully integrated CMOS biosensors rather than mathematical calculations and theoretical details. By using CMOS Capacitive Sensors for Lab-on-Chip Applications, the reader will have circuit design methodologies,

  20. Energy-Efficient Capacitance-to-Digital Converters for Smart Sensor Applications

    KAUST Repository

    Alhoshany, Abdulaziz

    2017-12-01

    One of the key requirements in the design of wireless sensor nodes and miniature biomedical devices is energy efficiency. For a sensor node, which is a sensor and readout circuit, to survive on limited energy sources such as a battery or harvested energy, its energy consumption should be minimized. Capacitive sensors are candidates for use in energy-constrained applications, as they do not consume static power and can be used in a wide range of applications to measure different physical, chemical or biological quantities. However, the energy consumption is dominated by the capacitive interface circuit, i.e. the capacitance-to-digital converter (CDC). Several energy-efficient CDC architectures are introduced in this dissertation to meet the demand for high resolution and energy efficiency in smart capacitive sensors. First, we propose an energy-efficient CDC based on a differential successive-approximation data converter. The proposed differential CDC employs an energy-efficient operational transconductance amplifier (OTA) based on an inverter. A wide capacitance range with fine absolute resolution is implemented in the proposed coarse-fine DAC architecture which saves 89% of silicon area. The proposed CDC achieves an energy efficiency figure-of-merit () of 45.8fJ/step, which is the best reported energy efficiency to date. Second, we propose an energy efficient CDC for high-precision capacitive resolution by using oversampling and noise shaping. The proposed CDC achieves 150 aF absolute resolution and an energy efficiency of 187fJ/conversion-step which outperforms state of the art high-precision differential CDCs. In the third and last part, we propose an in-vitro cancer diagnostic biosensor-CMOS platform for low-power, rapid detection, and low cost. The introduced platform is the first to demonstrate the ability to screen and quantify the spermidine/spermine N1 acetyltransferase (SSAT) enzyme which reveals the presence of early-stage cancer, on the surface of a

  1. Inside-out electrical capacitance tomography

    DEFF Research Database (Denmark)

    Kjærsgaard-Rasmussen, Jimmy; Meyer, Knud Erik

    2011-01-01

    In this work we demonstrate the construction of an ‘inside-out’ sensor geometry for electrical capacitance tomography (ECT). The inside-out geometry has the electrodes placed around a tube, as usual, but measuring ‘outwards’. The flow between the electrodes and an outer tube is reconstructed...

  2. Triboelectricity in capacitive biopotential measurements.

    Science.gov (United States)

    Wartzek, Tobias; Lammersen, Thomas; Eilebrecht, Benjamin; Walter, Marian; Leonhardt, Steffen

    2011-05-01

    Capacitive biopotential measurements suffer from strong motion artifacts, which may result in long time periods during which a reliable measurement is not possible. This study examines contact electrification and triboelectricity as possible reasons for these artifacts and discusses local triboelectric effects on the electrode-body interface as well as global electrostatic effects as common-mode interferences. It will be shown that most probably the triboelectric effects on the electrode-body interface are the main reason for artifacts, and a reduction of artifacts can only be achieved with a proper design of the electrode-body interface. For a deeper understanding of the observed effects, a mathematical model for triboelectric effects in highly isolated capacitive biopotential measurements is presented and verified with experiments. Based on these analyses of the triboelectric effects on the electrode-body interface, different electrode designs are developed and analyzed in order to minimize artifacts due to triboelectricity on the electrode-body interface. © 2011 IEEE

  3. Nonlinear dynamics of capacitive charging and desalination by porous electrodes

    Science.gov (United States)

    Biesheuvel, P. M.; Bazant, M. Z.

    2010-03-01

    The rapid and efficient exchange of ions between porous electrodes and aqueous solutions is important in many applications, such as electrical energy storage by supercapacitors, water desalination and purification by capacitive deionization, and capacitive extraction of renewable energy from a salinity difference. Here, we present a unified mean-field theory for capacitive charging and desalination by ideally polarizable porous electrodes (without Faradaic reactions or specific adsorption of ions) valid in the limit of thin double layers (compared to typical pore dimensions). We illustrate the theory for the case of a dilute, symmetric, binary electrolyte using the Gouy-Chapman-Stern (GCS) model of the double layer, for which simple formulae are available for salt adsorption and capacitive charging of the diffuse part of the double layer. We solve the full GCS mean-field theory numerically for realistic parameters in capacitive deionization, and we derive reduced models for two limiting regimes with different time scales: (i) in the “supercapacitor regime” of small voltages and/or early times, the porous electrode acts like a transmission line, governed by a linear diffusion equation for the electrostatic potential, scaled to the RC time of a single pore, and (ii) in the “desalination regime” of large voltages and long times, the porous electrode slowly absorbs counterions, governed by coupled, nonlinear diffusion equations for the pore-averaged potential and salt concentration.

  4. Quality assessment of MOZAIC and IAGOS capacitive hygrometers: insights from airborne field studies

    Directory of Open Access Journals (Sweden)

    Patrick Neis

    2015-10-01

    Full Text Available In 2011, the MOZAIC (Measurement of Ozone by AIRBUS In-Service Aircraft successor programme IAGOS (In-service Aircraft for a Global Observing System started to equip their long-haul passenger aircraft with the modified capacitive hygrometer Vaisala HUMICAP® of type H. The assurance of the data quality and the consistency of the data set during the transition from MOZAIC Capacitive Hygrometers to IAGOS Capacitive Hygrometers were evaluated within the CIRRUS-III and AIRTOSS-ICE field studies. During these performance tests, the capacitive hygrometers were operated aboard a Learjet 35A aircraft together with a closed-cell Lyman-α fluorescence hygrometer, an open-path tunable diode laser (TDL system and a closed-cell, direct TDL absorption hygrometer for water vapour measurement. For MOZAIC-typical operation conditions, the comparison of relative humidity (RH data from the capacitive hygrometers and reference instruments yielded remarkably good agreement with an uncertainty of 5% RH. The temperature dependence of the sensor's response time was derived from the cross-correlation of capacitive hygrometer data and smoothed data from the fast-responding reference instruments. The resulting exponential moving average function could explain the major part of the observed deviations between the capacitive hygrometers and the reference instruments.

  5. Integrated microelectronic capacitive readout subsystem for lab-on-a-chip applications

    International Nuclear Information System (INIS)

    Spathis, Christos; Georgakopoulou, Konstantina; Petrellis, Nikos; Efstathiou, Konstantinos; Birbas, Alexios

    2014-01-01

    A mixed-signal capacitive biosensor readout system is presented with its main readout functionality embedded in an integrated circuit, compatible with complementary metal oxide semiconductor-type biosensors. The system modularity allows its usage as a consumable since it eventually leads to a system-on-chip where sensor and readout circuitry are hosted on the same die. In this work, a constant current source is used for measuring the input capacitance. Compared to most capacitive biosensor readout circuits, this method offers the convenience of adjusting both the range and the resolution, depending on the requirements dictated by the application. The chip consumes less than 5 mW of power and the die area is 0.06 mm 2 . It shows a broad input capacitance range (capable of measuring bio-capacitances from 6 pF to 9.8 nF), configurable resolution (down to 1 fF), robustness to various biological experiments and good linearity. The integrated nature of the readout system is proven to be sufficient both for one-time in situ (consumable-type) bio-measurements and its incorporation into a point-of-care system. (paper)

  6. Fully integrated low-noise readout circuit with automatic offset cancellation loop for capacitive microsensors.

    Science.gov (United States)

    Song, Haryong; Park, Yunjong; Kim, Hyungseup; Cho, Dong-Il Dan; Ko, Hyoungho

    2015-10-14

    Capacitive sensing schemes are widely used for various microsensors; however, such microsensors suffer from severe parasitic capacitance problems. This paper presents a fully integrated low-noise readout circuit with automatic offset cancellation loop (AOCL) for capacitive microsensors. The output offsets of the capacitive sensing chain due to the parasitic capacitances and process variations are automatically removed using AOCL. The AOCL generates electrically equivalent offset capacitance and enables charge-domain fine calibration using a 10-bit R-2R digital-to-analog converter, charge-transfer switches, and a charge-storing capacitor. The AOCL cancels the unwanted offset by binary-search algorithm based on 10-bit successive approximation register (SAR) logic. The chip is implemented using 0.18 μm complementary metal-oxide-semiconductor (CMOS) process with an active area of 1.76 mm². The power consumption is 220 μW with 3.3 V supply. The input parasitic capacitances within the range of -250 fF to 250 fF can be cancelled out automatically, and the required calibration time is lower than 10 ms.

  7. Fully Integrated Low-Noise Readout Circuit with Automatic Offset Cancellation Loop for Capacitive Microsensors

    Directory of Open Access Journals (Sweden)

    Haryong Song

    2015-10-01

    Full Text Available Capacitive sensing schemes are widely used for various microsensors; however, such microsensors suffer from severe parasitic capacitance problems. This paper presents a fully integrated low-noise readout circuit with automatic offset cancellation loop (AOCL for capacitive microsensors. The output offsets of the capacitive sensing chain due to the parasitic capacitances and process variations are automatically removed using AOCL. The AOCL generates electrically equivalent offset capacitance and enables charge-domain fine calibration using a 10-bit R-2R digital-to-analog converter, charge-transfer switches, and a charge-storing capacitor. The AOCL cancels the unwanted offset by binary-search algorithm based on 10-bit successive approximation register (SAR logic. The chip is implemented using 0.18 μm complementary metal-oxide-semiconductor (CMOS process with an active area of 1.76 mm2. The power consumption is 220 μW with 3.3 V supply. The input parasitic capacitances within the range of −250 fF to 250 fF can be cancelled out automatically, and the required calibration time is lower than 10 ms.

  8. Large Capacitance Measurement by Multiple Uses of MBL Charge Sensor

    Science.gov (United States)

    Lee, Jung Sook; Chae, Min; Kim, Jung Bog

    2010-01-01

    A recent article by Morse described interesting electrostatics experiments using an MBL charge sensor. In this application, the charge sensor has a large capacitance compared to the charged test object, so nearly all charges can be transferred to the sensor capacitor from the capacitor to be measured. However, the typical capacitance of commercial…

  9. Sensitivity of on-resistance and threshold voltage to buffer-related deep level defects in AlGaN/GaN high electron mobility transistors

    International Nuclear Information System (INIS)

    Armstrong, Andrew M; Allerman, Andrew A; Baca, Albert G; Sanchez, Carlos A

    2013-01-01

    The influence of deep levels defects located in highly resistive GaN:C buffers on the on-resistance (R ON ) and threshold voltage (V th ) of AlGaN/GaN high electron mobility transistors (HEMTs) power devices was studied by a combined photocapacitance deep level optical spectroscopy (C-DLOS) and photoconductance deep level optical spectroscopy (G-DLOS) methodology as a function of electrical stress. Two carbon-related deep levels at 1.8 and 2.85 eV below the conduction band energy minimum were identified from C-DLOS measurements under the gate electrode. It was found that buffer-related defects under the gate shifted V th positively by approximately 10%, corresponding to a net areal density of occupied defects of 8 × 10 12 cm −2 . The effect of on-state drain stress and off-state gate stress on buffer deep level occupancy and R ON was also investigated via G-DLOS. It was found that the same carbon-related deep levels observed under the gate were also active in the access region. Off-state gate stress produced significantly more trapping and degradation of R ON (∼140%) compared to on-state drain stress (∼75%). Greater sensitivity of R ON to gate stress was explained by a more sharply peaked lateral distribution of occupied deep levels between the gate and drain compared to drain stress. The overall greater sensitivity of R ON compared to V th to buffer defects suggests that electron trapping is significantly greater in the access region compared to under the gate, likely due to the larger electric fields in the latter region. (invited paper)

  10. Capacitors and Resistance-Capacitance Networks.

    Science.gov (United States)

    Balabanian, Norman; Root, Augustin A.

    This programed textbook was developed under a contract with the United States Office of Education as Number 5 in a series of materials for use in an electrical engineering sequence. It is divided into three parts--(1) capacitors, (2) voltage-current relationships, and (3) simple resistance-capacitance networks. (DH)

  11. A new normalization method based on electrical field lines for electrical capacitance tomography

    International Nuclear Information System (INIS)

    Zhang, L F; Wang, H X

    2009-01-01

    Electrical capacitance tomography (ECT) is considered to be one of the most promising process tomography techniques. The image reconstruction for ECT is an inverse problem to find the spatially distributed permittivities in a pipe. Usually, the capacitance measurements obtained from the ECT system are normalized at the high and low permittivity for image reconstruction. The parallel normalization model is commonly used during the normalization process, which assumes the distribution of materials in parallel. Thus, the normalized capacitance is a linear function of measured capacitance. A recently used model is a series normalization model which results in the normalized capacitance as a nonlinear function of measured capacitance. The newest presented model is based on electrical field centre lines (EFCL), and is a mixture of two normalization models. The multi-threshold method of this model is presented in this paper. The sensitivity matrices based on different normalization models were obtained, and image reconstruction was carried out accordingly. Simulation results indicate that reconstructed images with higher quality can be obtained based on the presented model

  12. Effect of hysteretic and non-hysteretic negative capacitance on tunnel FETs DC performance

    Science.gov (United States)

    Saeidi, Ali; Jazaeri, Farzan; Stolichnov, Igor; Luong, Gia V.; Zhao, Qing-Tai; Mantl, Siegfried; Ionescu, Adrian M.

    2018-03-01

    This work experimentally demonstrates that the negative capacitance effect can be used to significantly improve the key figures of merit of tunnel field effect transistor (FET) switches. In the proposed approach, a matching condition is fulfilled between a trained-polycrystalline PZT capacitor and the tunnel FET (TFET) gate capacitance fabricated on a strained silicon-nanowire technology. We report a non-hysteretic switch configuration by combining a homojunction TFET and a negative capacitance effect booster, suitable for logic applications, for which the on-current is increased by a factor of 100, the transconductance by 2 orders of magnitude, and the low swing region is extended. The operation of a hysteretic negative capacitance TFET, when the matching condition for the negative capacitance is fulfilled only in a limited region of operation, is also reported and discussed. In this late case, a limited improvement in the device performance is observed. Overall, the paper demonstrates the main beneficial effects of negative capacitance on TFETs are the overdrive and transconductance amplification, which exactly address the most limiting performances of current TFETs.

  13. Large area, low capacitance Si(Li) detectors for high rate x-ray applications

    International Nuclear Information System (INIS)

    Rossington, C.S.; Fine, P.M.; Madden, N.W.

    1992-10-01

    Large area, single-element Si(Li) detectors have been fabricated using a novel geometry which yields detectors with reduced capacitance and hence reduced noise at short amplifier pulse-processing times. A typical device employing the new geometry with a thickness of 6 mm and an active area of 175 mm 2 has a capacitance of only 0.5 pf, compared to 2.9 pf for a conventional planar device with equivalent dimensions. These new low capacitance detectors, used in conjunction with low capacitance field effect transistors, will result in x-ray spectrometers capable of operating at very high count rates while still maintaining excellent energy resolution. The spectral response of the low capacitance detectors to a wide range of x-ray energies at 80 K is comparable to typical state-of-the-art conventional Si(Li) devices. In addition to their low capacitance, the new devices offer other advantages over conventional detectors. Detector fabrication procedures, I-V and C-V characteristics, noise performance, and spectral response to 2-60 keV x-rays are described

  14. Capacitance enhancement via electrode patterning

    International Nuclear Information System (INIS)

    Ho, Tuan A.; Striolo, Alberto

    2013-01-01

    The necessity of increasing the energy density in electric double layer capacitors to meet current demand is fueling fundamental and applied research alike. We report here molecular dynamics simulation results for aqueous electrolytes near model electrodes. Particular focus is on the effect of electrode patterning on the structure of interfacial electrolytes, and on the potential drop between the solid electrodes and the bulk electrolytes. The latter is estimated by numerically integrating the Poisson equation using the charge densities due to water and ions accumulated near the interface as input. We considered uniform and patterned electrodes, both positively and negatively charged. The uniformly charged electrodes are modeled as graphite. The patterned ones are obtained by removing carbon atoms from the top-most graphene layer, yielding nanoscopic squares and stripes patterns. For simplicity, the patterned electrodes are effectively simulated as insulators (the charge remains localized on the top-most layer of carbon atoms). Our simulations show that the patterns alter the structure of water and the accumulation of ions at the liquid-solid interfaces. Using aqueous NaCl solutions, we found that while the capacitance calculated for three positively charged electrodes did not change much, that calculated for the negatively charged electrodes significantly increased upon patterning. We find that both water structure and orientation, as well as ion accumulation affect the capacitance. As electrode patterning affects differently water structure and ion accumulation, it might be possible to observe ion-specific effects. These results could be useful for advancing our understanding of electric double layer capacitors, capacitive desalination processes, as well as of fundamental interfacial electrolytes properties

  15. Capacitive Cells for Dielectric Constant Measurement

    Science.gov (United States)

    Aguilar, Horacio Munguía; Maldonado, Rigoberto Franco

    2015-01-01

    A simple capacitive cell for dielectric constant measurement in liquids is presented. As an illustrative application, the cell is used for measuring the degradation of overheated edible oil through the evaluation of their dielectric constant.

  16. Multi-level gene/MiRNA feature selection using deep belief nets and active learning.

    Science.gov (United States)

    Ibrahim, Rania; Yousri, Noha A; Ismail, Mohamed A; El-Makky, Nagwa M

    2014-01-01

    Selecting the most discriminative genes/miRNAs has been raised as an important task in bioinformatics to enhance disease classifiers and to mitigate the dimensionality curse problem. Original feature selection methods choose genes/miRNAs based on their individual features regardless of how they perform together. Considering group features instead of individual ones provides a better view for selecting the most informative genes/miRNAs. Recently, deep learning has proven its ability in representing the data in multiple levels of abstraction, allowing for better discrimination between different classes. However, the idea of using deep learning for feature selection is not widely used in the bioinformatics field yet. In this paper, a novel multi-level feature selection approach named MLFS is proposed for selecting genes/miRNAs based on expression profiles. The approach is based on both deep and active learning. Moreover, an extension to use the technique for miRNAs is presented by considering the biological relation between miRNAs and genes. Experimental results show that the approach was able to outperform classical feature selection methods in hepatocellular carcinoma (HCC) by 9%, lung cancer by 6% and breast cancer by around 10% in F1-measure. Results also show the enhancement in F1-measure of our approach over recently related work in [1] and [2].

  17. Capacitive sensing of droplets for microfluidic devices based on thermocapillary actuation

    NARCIS (Netherlands)

    Chen, J.-Z.; Darhuber, A.A.; Troian, S.M.; Wagner, S.

    2004-01-01

    The design and performance of a miniaturized coplanar capacitive sensor is presented whose electrode arrays can also function as resistive microheaters for thermocapillary actuation of liquid films and droplets. Optimal compromise between large capacitive signal and high spatial resolution is

  18. Carbon Nanofiber versus Graphene-Based Stretchable Capacitive Touch Sensors for Artificial Electronic Skin.

    Science.gov (United States)

    Cataldi, Pietro; Dussoni, Simeone; Ceseracciu, Luca; Maggiali, Marco; Natale, Lorenzo; Metta, Giorgio; Athanassiou, Athanassia; Bayer, Ilker S

    2018-02-01

    Stretchable capacitive devices are instrumental for new-generation multifunctional haptic technologies particularly suited for soft robotics and electronic skin applications. A majority of elongating soft electronics still rely on silicone for building devices or sensors by multiple-step replication. In this study, fabrication of a reliable elongating parallel-plate capacitive touch sensor, using nitrile rubber gloves as templates, is demonstrated. Spray coating both sides of a rubber piece cut out of a glove with a conductive polymer suspension carrying dispersed carbon nanofibers (CnFs) or graphene nanoplatelets (GnPs) is sufficient for making electrodes with low sheet resistance values (≈10 Ω sq -1 ). The electrodes based on CnFs maintain their conductivity up to 100% elongation whereas the GnPs-based ones form cracks before 60% elongation. However, both electrodes are reliable under elongation levels associated with human joints motility (≈20%). Strikingly, structural damages due to repeated elongation/recovery cycles could be healed through annealing. Haptic sensing characteristics of a stretchable capacitive device by wrapping it around the fingertip of a robotic hand (ICub) are demonstrated. Tactile forces as low as 0.03 N and as high as 5 N can be easily sensed by the device under elongation or over curvilinear surfaces.

  19. A Flexible Capacitive Sensor with Encapsulated Liquids as Dielectrics

    Directory of Open Access Journals (Sweden)

    Yasunari Hotta

    2012-03-01

    Full Text Available Flexible and high-sensitive capacitive sensors are demanded to detect pressure distribution and/or tactile information on a curved surface, hence, wide varieties of polymer-based flexible MEMS sensors have been developed. High-sensitivity may be achieved by increasing the capacitance of the sensor using solid dielectric material while it deteriorates the flexibility. Using air as the dielectric, to maintain the flexibility, sacrifices the sensor sensitivity. In this paper, we demonstrate flexible and highly sensitive capacitive sensor arrays that encapsulate highly dielectric liquids as the dielectric. Deionized water and glycerin, which have relative dielectric constants of approximately 80 and 47, respectively, could increase the capacitance of the sensor when used as the dielectric while maintaining flexibility of the sensor with electrodes patterned on flexible polymer substrates. A reservoir of liquids between the electrodes was designed to have a leak path, which allows the sensor to deform despite of the incompressibility of the encapsulated liquids. The proposed sensor was microfabricated and demonstrated successfully to have a five times greater sensitivity than sensors that use air as the dielectric.

  20. Deep level transient spectroscopic investigation of phosphorus-doped silicon by self-assembled molecular monolayers.

    Science.gov (United States)

    Gao, Xuejiao; Guan, Bin; Mesli, Abdelmadjid; Chen, Kaixiang; Dan, Yaping

    2018-01-09

    It is known that self-assembled molecular monolayer doping technique has the advantages of forming ultra-shallow junctions and introducing minimal defects in semiconductors. In this paper, we report however the formation of carbon-related defects in the molecular monolayer-doped silicon as detected by deep-level transient spectroscopy and low-temperature Hall measurements. The molecular monolayer doping process is performed by modifying silicon substrate with phosphorus-containing molecules and annealing at high temperature. The subsequent rapid thermal annealing drives phosphorus dopants along with carbon contaminants into the silicon substrate, resulting in a dramatic decrease of sheet resistance for the intrinsic silicon substrate. Low-temperature Hall measurements and secondary ion mass spectrometry indicate that phosphorus is the only electrically active dopant after the molecular monolayer doping. However, during this process, at least 20% of the phosphorus dopants are electrically deactivated. The deep-level transient spectroscopy shows that carbon-related defects are responsible for such deactivation.

  1. Albedo Neutron Dosimetry in a Deep Geological Disposal Repository for High-Level Nuclear Waste.

    Science.gov (United States)

    Pang, Bo; Becker, Frank

    2017-04-28

    Albedo neutron dosemeter is the German official personal neutron dosemeter in mixed radiation fields where neutrons contribute to personal dose. In deep geological repositories for high-level nuclear waste, where neutrons can dominate the radiation field, it is of interest to investigate the performance of albedo neutron dosemeter in such facilities. In this study, the deep geological repository is represented by a shielding cask loaded with spent nuclear fuel placed inside a rock salt emplacement drift. Due to the backscattering of neutrons in the drift, issues concerning calibration of the dosemeter arise. Field-specific calibration of the albedo neutron dosemeter was hence performed with Monte Carlo simulations. In order to assess the applicability of the albedo neutron dosemeter in a deep geological repository over a long time scale, spent nuclear fuel with different ages of 50, 100 and 500 years were investigated. It was found out, that the neutron radiation field in a deep geological repository can be assigned to the application area 'N1' of the albedo neutron dosemeter, which is typical in reactors and accelerators with heavy shielding. © The Author 2016. Published by Oxford University Press. All rights reserved. For Permissions, please email: journals.permissions@oup.com.

  2. Probing 2D black phosphorus by quantum capacitance measurements

    International Nuclear Information System (INIS)

    Kuiri, Manabendra; Kumar, Chandan; Chakraborty, Biswanath; Gupta, Satyendra N; Naik, Mit H; Jain, Manish; Sood, A K; Das, Anindya

    2015-01-01

    Two-dimensional materials and their heterostructures have emerged as a new class of materials, not only for fundamental physics but also for electronic and optoelectronic applications. Black phosphorus (BP) is a relatively new addition to this class of materials. Its strong in-plane anisotropy makes BP a unique material for making conceptually new types of electronic devices. However, the global density of states (DOS) of BP in device geometry has not been measured experimentally. Here, we report the quantum capacitance measurements together with the conductance measurements on an hBN-protected few-layer BP (∼six layers) in a dual-gated field effect transistor (FET) geometry. The measured DOS from our quantum capacitance is compared with density functional theory (DFT). Our results reveal that the transport gap for quantum capacitance is smaller than that in conductance measurements due to the presence of localized states near the band edge. The presence of localized states is confirmed by the variable range hopping seen in our temperature dependence conductivity. A large asymmetry is observed between the electron and hole side. This asymmetric nature is attributed to the anisotropic band dispersion of BP. Our measurements establish the uniqueness of quantum capacitance in probing the localized states near the band edge, hitherto not seen in conductance measurements. (paper)

  3. A Micro Dynamically Tuned Gyroscope with Adjustable Static Capacitance

    Directory of Open Access Journals (Sweden)

    Lun Kong

    2013-02-01

    Full Text Available This paper presents a novel micro dynamically tuned gyroscope (MDTG with adjustable static capacitance. First, the principle of MDTG is theoretically analyzed. Next, some simulations under the optimized structure parameters are given as a reference for the mask design of the rotor wafer and electrode plates. As two key components, the process flows of the rotor wafer and electrode plates are described in detail. All the scanning electron microscopy (SEM photos show that the fabrication process is effective and optimized. Then, an assembly model is designed for the static capacitance adjustable MDTG, whose static capacitance can be changed by rotating the lower electrode plate support and substituting gasket rings of different thicknesses. Thus, the scale factor is easily changeable. Afterwards, the digitalized closed-loop measurement circuit is simulated. The discrete correction and decoupling modules are designed to make the closed-loop stable and cross-coupling effect small. The dual axis closed-loop system bandwidths can reach more than 60 Hz and the dual axis scale factors are completely symmetrical. All the simulation results demonstrate the proposed fabrication of the MDTG can meet the application requirements. Finally, the paper presents the test results of static and dynamic capacitance values which are consistent with the simulation values.

  4. Fabrication of a printed capacitive air-gap touch sensor

    Science.gov (United States)

    Lee, Sang Hoon; Seo, Hwiwon; Lee, Sangyoon

    2018-05-01

    Unlike lithography-based processes, printed electronics does not require etching, which makes it difficult to fabricate electronic devices with an air gap. In this study, we propose a method to fabricate capacitive air-gap touch sensors via printing and coating. First, the bottom electrode was fabricated on a flexible poly(ethylene terephthalate) (PET) substrate using roll-to-roll gravure printing with silver ink. Then poly(dimethylsiloxane) (PDMS) was spin coated to form a sacrificial layer. The top electrode was fabricated on the sacrificial layer by spin coating with a stretchable silver ink. The sensor samples were then put in a tetrabutylammonium (TBAF) bath to generate the air gap by removing the sacrificial layer. The capacitance of the samples was measured for verification, and the results show that the capacitance increases in proportion to the applied force from 0 to 2.5 N.

  5. A microcontroller-based interface circuit for lossy capacitive sensors

    International Nuclear Information System (INIS)

    Reverter, Ferran; Casas, Òscar

    2010-01-01

    This paper introduces and analyses a low-cost microcontroller-based interface circuit for lossy capacitive sensors, i.e. sensors whose parasitic conductance (G x ) is not negligible. Such a circuit relies on a previous circuit also proposed by the authors, in which the sensor is directly connected to a microcontroller without using either a signal conditioner or an analogue-to-digital converter in the signal path. The novel circuit uses the same hardware, but it performs an additional measurement and executes a new calibration technique. As a result, the sensitivity of the circuit to G x decreases significantly (a factor higher than ten), but not completely due to the input capacitances of the port pins of the microcontroller. Experimental results show a relative error in the capacitance measurement below 1% for G x x ) shows the effectiveness of the circuit

  6. Capacitive density measurement for supercritical hydrogen

    Science.gov (United States)

    Funke, Th; Haberstroh, Ch; Szoucsek, K.; Schott, S.; Kunze, K.

    2017-12-01

    A new approach for automotive hydrogen storage systems is the so-called cryo-compressed hydrogen storage (CcH2). It has a potential for increased energy densities and thus bigger hydrogen amounts onboard, which is the main attractiveness for car manufacturers such as BMW. This system has further advantages in terms of safety, refueling and cooling potential. The current filling level measurement by means of pressure and temperature measurement and subsequent density calculation faces challenges especially in terms of precision. A promising alternative is the capacitive gauge. This measuring principle can determine the filling level of the CcH2 tank with significantly smaller tolerances. The measuring principle is based on different dielectric constants of gaseous and liquid hydrogen. These differences are successfully leveraged in liquid hydrogen storage systems (LH2). The present theoretical analysis shows that the dielectric values of CcH2 in the relevant operating range are comparable to LH2, thus achieving similarly good accuracy. The present work discusses embodiments and implementations for such a sensor in the CcH2 tank.

  7. Conjugate Image Theory Applied on Capacitive Wireless Power Transfer

    OpenAIRE

    Ben Minnaert; Nobby Stevens

    2017-01-01

    Wireless power transfer using a magnetic field through inductive coupling is steadily entering the market in a broad range of applications. However, for certain applications, capacitive wireless power transfer using electric coupling might be preferable. In order to obtain a maximum power transfer efficiency, an optimal compensation network must be designed at the input and output ports of the capacitive wireless link. In this work, the conjugate image theory is applied to determine this opti...

  8. Development and Application of the Single-Spiral Inductive-Capacitive Resonant Circuit Sensor for Wireless, Real-Time Characterization of Moisture in Sand

    Directory of Open Access Journals (Sweden)

    Andrew J. DeRouin

    2013-01-01

    Full Text Available A wireless, passive embedded sensor was designed and fabricated for monitoring moisture in sand. The sensor, consisted of an inductive-capacitive (LC resonant circuit, was made of a printed spiral inductor embedded inside sand. When exposed to an electromagnetic field, the sensor resonated at a specific frequency dependent on the inductance of the inductor and its parasitic capacitance. Since the permittivity of water was much higher than dry sand, moisture in sample increased the parasitic capacitance, thus decreasing the sensor’s resonant frequency. Therefore, the internal moisture level of the sample could be easily measured through tracking the resonant frequency using a detection coil. The fabrication process of this sensor is much simpler compared to LC sensors that contain both capacitive and inductive elements, giving it an economical advantage. A study was conducted to investigate the drying rate of sand samples of different grain sizes. The experimental data showed a strong correlation with the actual moisture content in the samples. The described sensor technology can be applied for long term monitoring of localized water content inside soils and sands to understand the environmental health in these media, or monitoring moisture levels within concrete supports and road pavement.

  9. Plan of deep underground construction for investigations on high-level radioactive waste storage

    International Nuclear Information System (INIS)

    Mayanovskij, M.S.

    1996-01-01

    The program of studies of the Japanese PNC corporation on construction of deep underground storage for high-level radioactive wastes is presented. The program is intended for 20 years. The total construction costs equal about 20 billion yen. The total cost of the project is equal to 60 billion yen. The underground part is planned to reach 1000 m depth

  10. An Enhanced Sensing Application Based on a Flexible Projected Capacitive-Sensing Mattress

    Directory of Open Access Journals (Sweden)

    Wen-Ying Chang

    2014-04-01

    Full Text Available This paper presents a cost-effective sensor system for mattresses that can classify the sleeping posture of an individual and prevent pressure ulcers. This system applies projected capacitive sensing to the field of health care. The charge time (CT method was used to sensitively and accurately measure the capacitance of the projected electrodes. The required characteristics of the projected capacitor were identified to develop large-area applications for sensory mattresses. The area of the electrodes, the use of shielding, and the increased length of the transmission line were calibrated to more accurately measure the capacitance of the electrodes in large-size applications. To offer the users comfort in the prone position, a flexible substrate was selected and covered with 16 × 20 electrodes. Compared with the static charge sensitive bed (SCSB, our proposed system-flexible projected capacitive-sensing mattress (FPCSM comes with more electrodes to increase the resolution of posture identification. As for the body pressure system (BPS, the FPCSM has advantages such as lower cost, higher aging-resistance capability, and the ability to sense the capacitance of the covered regions without physical contact. The proposed guard ring design effectively absorbs the noise and interrupts leakage paths. The projected capacitive electrode is suitable for proximity-sensing applications and succeeds at quickly recognizing the sleeping pattern of the user.

  11. Capacitive Sensors for Feedback Control of Microfluidic Devices

    Science.gov (United States)

    Chen, J. Z.; Darhuber, A. A.; Troian, S. M.; Wagner, S.

    2003-11-01

    Automation of microfluidic devices based on thermocapillary flow [1] requires feedback control and detection techniques for monitoring the location, and ideally also composition and volume of liquid droplets. For this purpose we have developed a co-planar capacitance technique with a sensitivity of 0.07 pF at a frequency of 370 kHz. The variation in capacitance due to the presence of a droplet is monitored by the output frequency of an RC relaxation oscillator consisting of two inverters, one resistor and one capacitor. We discuss the performance of this coplanar sensor as a function of the electrode dimensions and geometry. These geometric variables determine the electric field penetration depth within the liquid, which in our studies ranged from 30 to 450 microns. Numerical solutions for the capacitance corresponding to the exact fabricated geometry agree very well with experimental data. An approximate analytic solution, which ignores fringe field effects, provides a simple but excellent guide for design development. [1] A. A. Darhuber et al., Appl. Phys. Lett. 82, 657 (2003).

  12. Vitrification treatment options for disposal of greater-than-Class-C low-level waste in a deep geologic repository

    International Nuclear Information System (INIS)

    Fullmer, K.S.; Fish, L.W.; Fischer, D.K.

    1994-11-01

    The Department of Energy (DOE), in keeping with their responsibility under Public Law 99-240, the Low-Level Radioactive Waste Policy Amendments Act of 1985, is investigating several disposal options for greater-than-Class C low-level waste (GTCC LLW), including emplacement in a deep geologic repository. At the present time vitrification, namely borosilicate glass, is the standard waste form assumed for high-level waste accepted into the Civilian Radioactive Waste Management System. This report supports DOE's investigation of the deep geologic disposal option by comparing the vitrification treatments that are able to convert those GTCC LLWs that are inherently migratory into stable waste forms acceptable for disposal in a deep geologic repository. Eight vitrification treatments that utilize glass, glass ceramic, or basalt waste form matrices are identified. Six of these are discussed in detail, stating the advantages and limitations of each relative to their ability to immobilize GTCC LLW. The report concludes that the waste form most likely to provide the best composite of performance characteristics for GTCC process waste is Iron Enriched Basalt 4 (IEB4)

  13. A branch-and-cut-and-price algorithm for the mixed capacitated general routing problem

    DEFF Research Database (Denmark)

    Bach, Lukas; Wøhlk, Sanne; Lysgaard, Jens

    2016-01-01

    In this paper, we consider the Mixed Capacitated General Routing Problem which is a combination of the Capacitated Vehicle Routing Problem and the Capacitated Arc Routing Problem. The problem is also known as the Node, Edge, and Arc Routing Problem. We propose a Branch-and-Cut-and-Price algorithm...

  14. Radon 222 levels in deep well waters of Toluca municipality (county)

    International Nuclear Information System (INIS)

    Olguin Gutierrez, Maria Teresa.

    1990-01-01

    The levels of Radon 222 were determined in 46 deep (50-180m) wells in the city and county of Toluca, as well as the annual radiation dose that the stomach admits when ingesting such water. The method used for the quantification of Radon 222 was liquid scintillation counting. The result revealed that levels of Radon 222 in the studied area in the range of 0 to 320 pCi l -1 . In the case of the equivalent annual dose that the stomach (empty) admits due to ingestion of water from the wells, values are in an interval between 0 to 95 mrem a -1 . This values are well below the level established by the International Commission of Radiological Protection (ICRP). The wells that had the higher concentration of Radon 222 were found in the regions of Lodo Prieto, Seminario; San Antonio Buenavista and La Trinidad Huichochitlan. (Author)

  15. Capacitive properties of polypyrrole/activated carbon composite

    Directory of Open Access Journals (Sweden)

    Porjazoska-Kujundziski Aleksandra

    2014-01-01

    Full Text Available Electrochemical synthesis of polypyrrole (PPy and polypyrrole / activated carbon (PPy / AC - composite films, with a thickness between 0.5 and 15 μm were performed in a three electrode cell containing 0.1 mol dm-3 Py, 0.5 mol dm-3 NaClO4 dissolved in ACN, and dispersed particles of AC (30 g dm-3. Electrochemical characterization of PPy and PPy / AC composites was performed using cyclic voltammetry (CV and electrochemical impedance spectroscopy (EIS techniques. The linear dependences of the capacitance (qC, redox capacitance (qred, and limiting capacitance (CL of PPy and PPy / AC - composite films on their thickness (L, obtained by electrochemical and impedance analysis, indicate a nearly homogeneous distribution of the incorporated AC particles in the composite films (correlation coefficient between 0.991 and 0.998. The significant enhancement of qC, qred, and CL, was observed for composite films (for ∼40 ± 5% in respect to that of the “pure” PPy. The decreased values of a volume resistivity in the reduced state of the composite film, ρ = 1.3 ⋅ 106 Ω cm (for L = 7.5 μm, for two orders of magnitude, compared to that of PPy - film with the same thickness, ρ ∼ 108 Ω cm, was also noticed.

  16. A Closer Look at Deep Learning Neural Networks with Low-level Spectral Periodicity Features

    DEFF Research Database (Denmark)

    Sturm, Bob L.; Kereliuk, Corey; Pikrakis, Aggelos

    2014-01-01

    Systems built using deep learning neural networks trained on low-level spectral periodicity features (DeSPerF) reproduced the most “ground truth” of the systems submitted to the MIREX 2013 task, “Audio Latin Genre Classification.” To answer why this was the case, we take a closer look...

  17. Flexible PVDF ferroelectric capacitive temperature sensor

    KAUST Repository

    Khan, Naveed; Omran, Hesham; Yao, Yingbang; Salama, Khaled N.

    2015-01-01

    sensitivity of 16pF/°C. The linearity measurement of the capacitance-temperature relation shows less than 0.7°C error from a best fit straight line. An LC oscillator based temperature sensor is demonstrated based on this capacitor.

  18. Ultrahigh Temperature Capacitive Pressure Sensor

    Science.gov (United States)

    Harsh, Kevin

    2014-01-01

    Robust, miniaturized sensing systems are needed to improve performance, increase efficiency, and track system health status and failure modes of advanced propulsion systems. Because microsensors must operate in extremely harsh environments, there are many technical challenges involved in developing reliable systems. In addition to high temperatures and pressures, sensing systems are exposed to oxidation, corrosion, thermal shock, fatigue, fouling, and abrasive wear. In these harsh conditions, sensors must be able to withstand high flow rates, vibration, jet fuel, and exhaust. In order for existing and future aeropropulsion turbine engines to improve safety and reduce cost and emissions while controlling engine instabilities, more accurate and complete sensor information is necessary. High-temperature (300 to 1,350 C) capacitive pressure sensors are of particular interest due to their high measurement bandwidth and inherent suitability for wireless readout schemes. The objective of this project is to develop a capacitive pressure sensor based on silicon carbon nitride (SiCN), a new class of high-temperature ceramic materials, which possesses excellent mechanical and electric properties at temperatures up to 1,600 C.

  19. Using Deep Learning Techniques to Forecast Environmental Consumption Level

    Directory of Open Access Journals (Sweden)

    Donghyun Lee

    2017-10-01

    Full Text Available Artificial intelligence is a promising futuristic concept in the field of science and technology, and is widely used in new industries. The deep-learning technology leads to performance enhancement and generalization of artificial intelligence technology. The global leader in the field of information technology has declared its intention to utilize the deep-learning technology to solve environmental problems such as climate change, but few environmental applications have so far been developed. This study uses deep-learning technologies in the environmental field to predict the status of pro-environmental consumption. We predicted the pro-environmental consumption index based on Google search query data, using a recurrent neural network (RNN model. To verify the accuracy of the index, we compared the prediction accuracy of the RNN model with that of the ordinary least square and artificial neural network models. The RNN model predicts the pro-environmental consumption index better than any other model. We expect the RNN model to perform still better in a big data environment because the deep-learning technologies would be increasingly sophisticated as the volume of data grows. Moreover, the framework of this study could be useful in environmental forecasting to prevent damage caused by climate change.

  20. A Possible Minimum Toy Model with Negative Differential Capacitance for Self-sustained Current Oscillation

    International Nuclear Information System (INIS)

    Xiong Gang; Sun Zhouzhou; Wang Xiangrong

    2007-01-01

    We generalize a simple model for superlattices to include the effect of differential capacitance. It is shown that the model always has a stable steady-state solution (SSS) if all differential capacitances are positive. On the other hand, when negative differential capacitance is included, the model can have no stable SSS and be in a self-sustained current oscillation behavior. Therefore, we find a possible minimum toy model with both negative differential resistance and negative differential capacitance which can include the phenomena of both self-sustained current oscillation and I-V oscillation of stable SSSs.

  1. A multichannel portable ECG system with capacitive sensors

    International Nuclear Information System (INIS)

    Oehler, M; Schilling, M; Ling, V; Melhorn, K

    2008-01-01

    Capacitive sensors can be employed for measuring the electrocardiogram of a human heart without electric contact with the skin. This configuration avoids contact problems experienced by conventional electrocardiography. In our studies, we integrated these capacitive electrocardiogram electrodes in a 15-sensor array and combined this array with a tablet personal computer. By placing the system on the patient's body, we can measure a 15-channel electrocardiogram even through clothes and without any preparation. The goal of this development is to provide a new diagnostic tool that offers the user a reproducible, easy access to a fast and spatially resolved diagnostic 'heart view'

  2. A highly sensitive and specific capacitive aptasensor for rapid and label-free trace analysis of Bisphenol A (BPA) in canned foods.

    Science.gov (United States)

    Mirzajani, Hadi; Cheng, Cheng; Wu, Jayne; Chen, Jiangang; Eda, Shigotoshi; Najafi Aghdam, Esmaeil; Badri Ghavifekr, Habib

    2017-03-15

    A rapid, highly sensitive, specific and low-cost capacitive affinity biosensor is presented here for label-free and single step detection of Bisphenol A (BPA). The sensor design allows rapid prototyping at low-cost using printed circuit board material by benchtop equipment. High sensitivity detection is achieved through the use of a BPA-specific aptamer as probe molecule and large electrodes to enhance AC-electroelectrothermal effect for long-range transport of BPA molecules toward electrode surface. Capacitive sensing technique is used to determine the bounded BPA level by measuring the sample/electrode interfacial capacitance of the sensor. The developed biosensor can detect BPA level in 20s and exhibits a large linear range from 1 fM to 10 pM, with a limit of detection (LOD) of 152.93 aM. This biosensor was applied to test BPA in canned food samples and could successfully recover the levels of spiked BPA. This sensor technology is demonstrated to be highly promising and reliable for rapid, sensitive and on-site monitoring of BPA in food samples. Copyright © 2016 Elsevier B.V. All rights reserved.

  3. The roles of the temperature on the structural and electronic properties of deep-level V{sub As}V{sub Ga} defects in gallium arsenide

    Energy Technology Data Exchange (ETDEWEB)

    Ma, Deming, E-mail: xautmdm@163.com; Chen, Xi; Qiao, Hongbo; Shi, Wei; Li, Enling

    2015-07-15

    Highlights: • The energy gap of the Ga{sub As}As{sub Ga}V{sub As}V{sub Ga} is 0.82 eV. • Proves that the Ga{sub As}As{sub Ga}V{sub As}V{sub Ga} belongs to EL2 deep-level defect in GaAs. • Proves that EL2 and EL6 deep-level defects can transform into each other. • Temperature has an important effect on the microstructure of deep-level defects. - Abstract: The roles of temperature on the structural and electronic properties of V{sub As}V{sub Ga} defects in gallium arsenide have been studied by using ab-initio molecular dynamic (MD) simulation. Our calculated results show that the relatively stable quaternary complex defect of Ga{sub As}As{sub Ga}V{sub As}V{sub Ga} can be converted from the V{sub As}V{sub Ga} complex clusters defect between 300 K and 1173 K; however, from 1173 K to 1373 K, the decomposition of the complex defect Ga{sub As}As{sub Ga}V{sub As}V{sub Ga} occurs, turning into a deep-level V{sub As}V{sub Ga} cluster defect and an isolated As{sub Ga} antisite defect, and relevant defect of Ga{sub As} is recovered. The properties of Ga{sub As}As{sub Ga}V{sub As}V{sub Ga} defect has been studied by first-principles calculations based on hybrid density functional theory. Our calculated results show that the Ga{sub As}As{sub Ga}V{sub As}V{sub Ga} belongs to EL2 deep-level defect in GaAs. Thus, we reveal that the temperature has an important effect on the microstructure of deep-level defects and defect energy level in gallium arsenide that EL2 and EL6 deep-level defects have a certain correlation, which means they could transform into each other. Controlling temperature in the growth process of GaAs could change the microstructure of deep-level defects and defect energy levels in gallium arsenide materials, whereby affects the electron transport properties of materials.

  4. Capacitive sensor for continuous monitoring of high-volume droplet microfluidic generation

    KAUST Repository

    Conchouso Gonzalez, David

    2016-12-19

    This paper presents a capacitive sensor for monitoring parallel microfluidic droplet generation. The great electric permittivity difference between common droplet microfluidic fluids such as air, oil and water (ϵoil ≈ 2–3 and ϵwater ≈ 80.4), allows for accurate detection of water in oil concentration changes. Capacitance variations as large as 10 pF between a channel filled with water or dodecane, are used to continuously monitor the output of a parallelization system producing 150 µl/min of water in dodecane emulsions. We also discuss a low cost fabrication process to manufacture these capacitive sensors, which can be integrated to different substrates.

  5. Performance relations in Capacitive Deionization systems

    NARCIS (Netherlands)

    Limpt, van B.

    2010-01-01

    Capacitive Deionization (CDI) is a relatively new deionization technology based on the temporary storage of ions on an electrically charged surface. By directing a flow between two oppositely charged surfaces, negatively charged ions will adsorb onto the positively charged surface, and positively

  6. Comparison of gate capacitance extraction methodologies

    NARCIS (Netherlands)

    Kazmi, S.N.R.; Schmitz, Jurriaan

    2008-01-01

    In recent years, many new capacitance-voltage measurement approaches have been presented in literature. New approaches became necessary with the rapidly increasing gate current density in newer CMOS generations. Here we present a simulation platform using Silvaco software, to describe the full chain

  7. Current Progress of Capacitive Deionization for Removal of Pollutant Ions

    Science.gov (United States)

    Gaikwad, Mahendra S.; Balomajumder, Chandrajit

    2016-08-01

    A mini review of a recently developing water purification technology capacitive deionization (CDI) applied for removal of pollutant ions is provided. The current progress of CDI for removal of different pollutant ions such as arsenic, fluoride, boron, phosphate, lithium, copper, cadmium, ferric, and nitrate ions is presented. This paper aims at motivating new research opportunities in capacitive deionization technology for removal of pollutant ions from polluted water.

  8. Functional human sperm capacitation requires both bicarbonate-dependent PKA activation and down-regulation of Ser/Thr phosphatases by Src family kinases.

    Science.gov (United States)

    Battistone, M A; Da Ros, V G; Salicioni, A M; Navarrete, F A; Krapf, D; Visconti, P E; Cuasnicú, P S

    2013-09-01

    In all mammalian species studied so far, sperm capacitation correlates with an increase in protein tyrosine (Tyr) phosphorylation mediated by a bicarbonate-dependent cAMP/protein kinase A (PKA) pathway. Recent studies in mice revealed, however, that a Src family kinase (SFK)-induced inactivation of serine/threonine (Ser/Thr) phosphatases is also involved in the signaling pathways leading to Tyr phosphorylation. In view of these observations and with the aim of getting a better understanding of the signaling pathways involved in human sperm capacitation, in the present work we investigated the involvement of both the cAMP/PKA and SFK/phosphatase pathways in relation to the capacitation state of the cells. For this purpose, different signaling events and sperm functional parameters were analyzed as a function of capacitation time. Results revealed a very early bicarbonate-dependent activation of PKA indicated by the rapid (1 min) increase in both phospho-PKA substrates and cAMP levels (P < 0.05). However, a complete pattern of Tyr phosphorylation was detected only after 6-h incubation at which time sperm exhibited the ability to undergo the acrosome reaction (AR) and to penetrate zona-free hamster oocytes. Sperm capacitated in the presence of the SFK inhibitor SKI606 showed a decrease in both PKA substrate and Tyr phosphorylation levels, which was overcome by exposure of sperm to the Ser/Thr phosphatase inhibitor okadaic acid (OA). However, OA was unable to induce phosphorylation when sperm were incubated under PKA-inhibitory conditions (i.e. in the absence of bicarbonate or in the presence of PKA inhibitor). Moreover, the increase in PKA activity by exposure to a cAMP analog and a phosphodiesterase inhibitor did not overcome the inhibition produced by SKI606. Whereas the presence of SKI606 during capacitation produced a negative effect (P < 0.05) on sperm motility, progesterone-induced AR and fertilizing ability, none of these inhibitions were observed when sperm

  9. Towards ultrahigh volumetric capacitance: graphene derived highly dense but porous carbons for supercapacitors

    Science.gov (United States)

    Tao, Ying; Xie, Xiaoying; Lv, Wei; Tang, Dai-Ming; Kong, Debin; Huang, Zhenghong; Nishihara, Hirotomo; Ishii, Takafumi; Li, Baohua; Golberg, Dmitri; Kang, Feiyu; Kyotani, Takashi; Yang, Quan-Hong

    2013-10-01

    A small volumetric capacitance resulting from a low packing density is one of the major limitations for novel nanocarbons finding real applications in commercial electrochemical energy storage devices. Here we report a carbon with a density of 1.58 g cm-3, 70% of the density of graphite, constructed of compactly interlinked graphene nanosheets, which is produced by an evaporation-induced drying of a graphene hydrogel. Such a carbon balances two seemingly incompatible characteristics: a porous microstructure and a high density, and therefore has a volumetric capacitance for electrochemical capacitors (ECs) up to 376 F cm-3, which is the highest value so far reported for carbon materials in an aqueous electrolyte. More promising, the carbon is conductive and moldable, and thus could be used directly as a well-shaped electrode sheet for the assembly of a supercapacitor device free of any additives, resulting in device-level high energy density ECs.

  10. Locating Depots for Capacitated Vehicle Routing

    DEFF Research Database (Denmark)

    Gørtz, Inge Li; Nagarajan, Viswanath

    2016-01-01

    We study a location-routing problem in the context of capacitated vehicle routing. The input to the k-location capacitated vehicle routing problem (k-LocVRP) consists of a set of demand locations in a metric space and a fleet of k identical vehicles, each of capacity Q. The objective is to locate k...... depots, one for each vehicle, and compute routes for the vehicles so that all demands are satisfied and the total cost is minimized. Our main result is a constant-factor approximation algorithm for k-LocVRP. In obtaining this result, we introduce a common generalization of the k-median and minimum...... spanning tree problems (called k median forest), which might be of independent interest. We give a local-search based (3+ε)-approximation algorithm for k median forest, which leads to a (12+ε)-approximation algorithm for k-LocVRP, for any constant ε>0....

  11. Locating Depots for Capacitated Vehicle Routing

    DEFF Research Database (Denmark)

    Gørtz, Inge Li; Nagarajan, Viswanath

    2016-01-01

    depots, one for each vehicle, and compute routes for the vehicles so that all demands are satisfied and the total cost is minimized. Our main result is a constant-factor approximation algorithm for k-LocVRP. In obtaining this result, we introduce a common generalization of the k-median and minimum...... spanning tree problems (called k median forest), which might be of independent interest. We give a local-search based (3+ε)-approximation algorithm for k median forest, which leads to a (12+ε)-approximation algorithm for k-LocVRP, for any constant ε>0.......We study a location-routing problem in the context of capacitated vehicle routing. The input to the k-location capacitated vehicle routing problem (k-LocVRP) consists of a set of demand locations in a metric space and a fleet of k identical vehicles, each of capacity Q. The objective is to locate k...

  12. Effect of noncovalent basal plane functionalization on the quantum capacitance in graphene.

    Science.gov (United States)

    Ebrish, Mona A; Olson, Eric J; Koester, Steven J

    2014-07-09

    The concentration-dependent density of states in graphene allows the capacitance in metal-oxide-graphene structures to be tunable with the carrier concentration. This feature allows graphene to act as a variable capacitor (varactor) that can be utilized for wireless sensing applications. Surface functionalization can be used to make graphene sensitive to a particular species. In this manuscript, the effect on the quantum capacitance of noncovalent basal plane functionalization using 1-pyrenebutanoic acid succimidyl ester and glucose oxidase is reported. It is found that functionalized samples tested in air have (1) a Dirac point similar to vacuum conditions, (2) increased maximum capacitance compared to vacuum but similar to air, (3) and quantum capacitance "tuning" that is greater than that in vacuum and ambient atmosphere. These trends are attributed to reduced surface doping and random potential fluctuations as a result of the surface functionalization due to the displacement of H2O on the graphene surface and intercalation of a stable H2O layer beneath graphene that increases the overall device capacitance. The results are important for future application of graphene as a platform for wireless chemical and biological sensors.

  13. Design, Development and Testing of a Semicircular Type Capacitive Angular Position Sensor

    Directory of Open Access Journals (Sweden)

    Nikhil GAURAV

    2011-06-01

    Full Text Available A low cost semicircular type capacitive angular position sensor has been designed, developed and tested. It is made of two semicircular parallel plates where one plate is fixed and another plate is connected with the rotor whose angular position is to be measured. When the angular position of the rotor changes with respect to the fixed plate, the overlapping area between the two plates of the capacitor is varied causing a change in capacitance value. Capacitance variation obtained due to the change in angular position is in the nano farad range. For signal conditioning, series R-L-C resonating circuit instead of conventional bridge circuit has been used to convert the sensor capacitance variation in to voltage. Experimental result shows that the capacitance for change in angular position 0º-180º increases linearly and for 180º-360º it decreases linearly. To get a linearly increasing response of same slope for the full scale of 0º-360º, a suitable linearising circuit has been designed, developed and tested. Sensor output along with the signal conditioning shows good linearity and repeatability.

  14. Development and analysis of a capacitive touch sensor using a liquid metal droplet

    International Nuclear Information System (INIS)

    Baek, Seungbum; Won, Dong-Joon; Kim, Joong Gil; Kim, Joonwon

    2015-01-01

    In this paper, we introduce a small-sized capacitive touch sensor with large variations in its capacitance. This sensor uses the changes in capacitance caused by the variation of the overlap area between a liquid metal (LM) droplet and a flat electrode while keeping the gap between the droplet and the bottom electrode at a small constant value (i.e. thickness of dielectric layer). Initially, the droplet is placed inside a polydimethylsiloxane (PDMS) chamber, and a thin silicon dioxide film separates the droplet and the electrode. Owing to the high surface tension of the LM, the droplet retains its spherical shape and the overlap area remains small, which means that the capacitance between the droplet and the electrode also remains small. When normal force is applied, the pressure on the membrane pushes the droplet downward, thus spreading the droplet to the bottom of the chamber and increasing the capacitance. To verify our concept, we performed theoretical analyses and experiments using a 2 mm  ×  2 mm  ×  2 mm 1-cell touch sensor. Finally, we obtained a capacitance variation of ∼30 pF by applying forces between 0 N and 1 N. (paper)

  15. Anomalous effects on radiation detectors and capacitance measurements inside a modified Faraday cage

    Energy Technology Data Exchange (ETDEWEB)

    Milián-Sánchez, V., E-mail: vicmisan@iqn.upv.es [Institute for Industrial, Radiophysical and Environmental Safety, Universitat Politècnica de València, Camino de Vera, s/n, Valencia (Spain); Mocholí-Salcedo, A., E-mail: amocholi@eln.upv.es [Traffic Control Systems Group, ITACA Institute, Universitat Politécnica de, Camino de Vera, s/n, Valencia (Spain); Milián, C., E-mail: carles.milian@cpht.polytechnique.fr [Centre de Physique Théorique, CNRS, École Polytechnique, F-91128 Palaiseau (France); Kolombet, V.A., E-mail: kolombet@iteb.ru [Institute of Theoretical and Experimental Biophysics, Russian Academy of Science, Moscow Region, Pushchino 142290 (Russian Federation); Verdú, G., E-mail: gverdu@iqn.upv.es [Institute for Industrial, Radiophysical and Environmental Safety, Universitat Politècnica de València, Camino de Vera, s/n, Valencia (Spain); Chemical and Nuclear Engineering Department, Universitat Politécnica de Valencia, Camino de Vera, s/n, Valencia (Spain)

    2016-08-21

    We present experimental results showing certain anomalies in the measurements performed inside a modified Faraday cage of decay rates of Ra-226, Tl-204 and Sr-90/I-90, of the gamma spectrum of a Cs-137 preparation, and of the capacitance of both a class-I multilayer ceramic capacitor and of the interconnection cable between the radiation detector and the scaler. Decay rates fluctuate significantly up to 5% around the initial value and differently depending on the type of nuclide, and the spectrum photopeak increases in 4.4%. In the case of the capacitor, direct capacitance measurements at 100 Hz, 10 kHz and 100 kHz show variations up to 0.7%, the most significant taking place at 100 Hz. In the case of the interconnection cable, the capacitance varies up to 1%. Dispersion also tends to increase inside the enclosure. However, the measured capacitance variations do not explain the variations observed in decay rates. - Highlights: • Background counts and decay rates changes of different nuclides are described. • Those changes are observed inside a multilayer modified Faraday cage. • Noise in a multichannel analyzer increases inside the multilayer enclosure. • Capacitance of a class-I multilayer ceramic capacitor varies inside the enclosure. • Capacitance changes depend on the used frequency.

  16. Anomalous effects on radiation detectors and capacitance measurements inside a modified Faraday cage

    International Nuclear Information System (INIS)

    Milián-Sánchez, V.; Mocholí-Salcedo, A.; Milián, C.; Kolombet, V.A.; Verdú, G.

    2016-01-01

    We present experimental results showing certain anomalies in the measurements performed inside a modified Faraday cage of decay rates of Ra-226, Tl-204 and Sr-90/I-90, of the gamma spectrum of a Cs-137 preparation, and of the capacitance of both a class-I multilayer ceramic capacitor and of the interconnection cable between the radiation detector and the scaler. Decay rates fluctuate significantly up to 5% around the initial value and differently depending on the type of nuclide, and the spectrum photopeak increases in 4.4%. In the case of the capacitor, direct capacitance measurements at 100 Hz, 10 kHz and 100 kHz show variations up to 0.7%, the most significant taking place at 100 Hz. In the case of the interconnection cable, the capacitance varies up to 1%. Dispersion also tends to increase inside the enclosure. However, the measured capacitance variations do not explain the variations observed in decay rates. - Highlights: • Background counts and decay rates changes of different nuclides are described. • Those changes are observed inside a multilayer modified Faraday cage. • Noise in a multichannel analyzer increases inside the multilayer enclosure. • Capacitance of a class-I multilayer ceramic capacitor varies inside the enclosure. • Capacitance changes depend on the used frequency.

  17. Manganese oxide micro-supercapacitors with ultra-high areal capacitance

    Science.gov (United States)

    Wang, Xu; Myers, Benjamin D.; Yan, Jian; Shekhawat, Gajendra; Dravid, Vinayak; Lee, Pooi See

    2013-05-01

    A symmetric micro-supercapacitor is constructed by electrochemically depositing manganese oxide onto micro-patterned current collectors. High surface-to-volume ratio of manganese oxide and short diffusion distance between electrodes give an ultra-high areal capacitance of 56.3 mF cm-2 at a current density of 27.2 μA cm-2.A symmetric micro-supercapacitor is constructed by electrochemically depositing manganese oxide onto micro-patterned current collectors. High surface-to-volume ratio of manganese oxide and short diffusion distance between electrodes give an ultra-high areal capacitance of 56.3 mF cm-2 at a current density of 27.2 μA cm-2. Electronic supplementary information (ESI) available: Experimental procedures; optical images of micro-supercapacitors; areal capacitances of samples M-0.3C, M-0.6C and M-0.9C; illustration of interdigital finger electrodes; Nyquist plot of Co(OH)2 deposited on micro-electrodes. See DOI: 10.1039/c3nr00210a

  18. Considerations affecting deep-well disposal of tritium-bearing low-level aqueous waste from nuclear fuel reprocessing plants

    International Nuclear Information System (INIS)

    Trevorrow, L.E.; Warner, D.L.; Steindler, M.J.

    1977-03-01

    Present concepts of disposal of low-level aqueous wastes (LLAW) that contain much of the fission-product tritium from light water reactors involve dispersal to the atmosphere or to surface streams at fuel reprocessing plants. These concepts have been challenged in recent years. Deep-well injection of low-level aqueous wastes, an alternative to biospheric dispersal, is the subject of this presentation. Many factors must be considered in assessing its feasibility, including technology, costs, environmental impact, legal and regulatory constraints, and siting. Examination of these factors indicates that the technology of deep-well injection, extensively developed for other industrial wastes, would require little innovation before application to low-level aqueous wastes. Costs would be low, of the order of magnitude of 10 -4 mill/kWh. The environmental impact of normal deep-well disposal would be small, compared with dispersal to the atmosphere or to surface streams; abnormal operation would not be expected to produce catastrophic results. Geologically suitable sites are abundant in the U.S., but a well would best be co-located with the fuel-reprocessing plant where the LLAW is produced. Legal and regulatory constraints now being developed will be the most important determinants of the feasibility of applying the method

  19. CMOS MEMS capacitive absolute pressure sensor

    International Nuclear Information System (INIS)

    Narducci, M; Tsai, J; Yu-Chia, L; Fang, W

    2013-01-01

    This paper presents the design, fabrication and characterization of a capacitive pressure sensor using a commercial 0.18 µm CMOS (complementary metal–oxide–semiconductor) process and postprocess. The pressure sensor is capacitive and the structure is formed by an Al top electrode enclosed in a suspended SiO 2 membrane, which acts as a movable electrode against a bottom or stationary Al electrode fixed on the SiO 2 substrate. Both the movable and fixed electrodes form a variable parallel plate capacitor, whose capacitance varies with the applied pressure on the surface. In order to release the membranes the CMOS layers need to be applied postprocess and this mainly consists of four steps: (1) deposition and patterning of PECVD (plasma-enhanced chemical vapor deposition) oxide to protect CMOS pads and to open the pressure sensor top surface, (2) etching of the sacrificial layer to release the suspended membrane, (3) deposition of PECVD oxide to seal the etching holes and creating vacuum inside the gap, and finally (4) etching of the passivation oxide to open the pads and allow electrical connections. This sensor design and fabrication is suitable to obey the design rules of a CMOS foundry and since it only uses low-temperature processes, it allows monolithic integration with other types of CMOS compatible sensors and IC (integrated circuit) interface on a single chip. Experimental results showed that the pressure sensor has a highly linear sensitivity of 0.14 fF kPa −1 in the pressure range of 0–300 kPa. (paper)

  20. Thermodynamic cycle analysis for capacitive deionization

    NARCIS (Netherlands)

    Biesheuvel, P.M.

    2009-01-01

    Capacitive deionization (CDI) is an ion removal technology based on temporarily storing ions in the polarization layers of two oppositely positioned electrodes. Here we present a thermodynamic model for the minimum work required for ion separation in the fully reversible case by describing the ionic

  1. Capacitive properties of PANI/MnO{sub 2} synthesized via simultaneous-oxidation route

    Energy Technology Data Exchange (ETDEWEB)

    Zhang Jie [School of Chemistry and Environment, South China Normal University, Guangzhou 510006 (China); Shu Dong, E-mail: dshu@scnu.edu.cn [School of Chemistry and Environment, South China Normal University, Guangzhou 510006 (China); Tianneng Group, Changxing 313100, Zhejiang Province (China); Base of Production, Education and Research on Energy Storage and Power Battery of Guangdong Higher Education Institutes, Guangzhou 510006 (China); Key Laboratory of Electrochemical Technology on Energy Storage and Power Generation of Guangdong Higher Education Institutes, South China Normal University, Guangzhou 510006 (China); Zhang Tianren [Tianneng Group, Changxing 313100, Zhejiang Province (China); Chen Hongyu [School of Chemistry and Environment, South China Normal University, Guangzhou 510006 (China); Base of Production, Education and Research on Energy Storage and Power Battery of Guangdong Higher Education Institutes, Guangzhou 510006 (China); Key Laboratory of Electrochemical Technology on Energy Storage and Power Generation of Guangdong Higher Education Institutes, South China Normal University, Guangzhou 510006 (China); Zhao Haimin; Wang Yongsheng [Tianneng Group, Changxing 313100, Zhejiang Province (China); Sun Zhenjie; Tang Shaoqing [School of Chemistry and Environment, South China Normal University, Guangzhou 510006 (China); Fang Xueming [Tianneng Group, Changxing 313100, Zhejiang Province (China); Cao Xiufang [School of Chemistry and Environment, South China Normal University, Guangzhou 510006 (China)

    2012-08-15

    Highlights: Black-Right-Pointing-Pointer PANI/MnO{sub 2} composite was synthesized by the simultaneous-oxidation route. Black-Right-Pointing-Pointer Good contact in inter-molecule level between PANI and MnO{sub 2} improves the conductivity. Black-Right-Pointing-Pointer The separation between PANI and MnO{sub 2} prevents the aggregation of nano-composite. Black-Right-Pointing-Pointer The maximum specific capacitance of the PANI/MnO{sub 2} electrode is 320 F/g. Black-Right-Pointing-Pointer The as-prepared PANI/MnO{sub 2} exhibits excellent cycle stability of 84% capacitance retention after 10,000 cycles. - Abstract: Polyaniline (PANI) and manganese dioxide (MnO{sub 2}) composite (PANI/MnO{sub 2}) was synthesized via a simultaneous-oxidation route. In this route, all reactants were dispersed homogenously in precursor solution and existed as ions and molecules, and involved reactions of ions and molecules generating PANI and MnO{sub 2} simultaneously. In this way, PANI molecule and MnO{sub 2} molecule contact each other and arrange alternately in the composite. The inter-molecule contact improves the conductivity of the composite. The alternative arrangement of PANI molecules and MnO{sub 2} molecules separating each other, and prevents the aggregation of PANI and cluster of MnO{sub 2} so as to decrease the particle size of the composite. The morphology, structure, porous and capacitive properties are characterized by scanning electron microscopy, X-ray diffraction spectroscopy, X-ray photoelectron spectroscopy, Branauer-Emmett-Teller test, thermogravimetric analysis, Fourier transform infrared spectroscopy, cyclic voltammetry, charge-discharge test and the electrochemical impedance measurements. The results show that MnO{sub 2} is predominant in the PANI/MnO{sub 2} composite and the composite exhibits larger specific surface area than pure MnO{sub 2}. The maximum specific capacitance of the composite electrode reaches up to 320 F/g by charge-discharge test, 1.56 times

  2. A New Wide Frequency Band Capacitance Transducer with Application to Measuring Metal Fill Time

    Directory of Open Access Journals (Sweden)

    Wael DEABES

    2009-01-01

    Full Text Available A novel low cost, high frequency circuit for measuring capacitance is proposed in this paper. This new capacitance measuring circuit is able to measure small coupling capacitance variations with high stray-immunity. Hence, it could be used in many potential applications such as measuring the metal fill time in the Lost Foam Casting (LFC process and Electrical Capacitive Tomography (ECT system. The proposed circuit is based on differential charging/discharging method using current feedback amplifier and a synchronous demodulation stage. The circuit has a wide high frequency operating range with zero phase shift; hence multiple circuits can work at different frequencies simultaneously to measure the capacitance. The non-ideal characteristic of the circuit has been analyzed and the results verified through LTSpice simulation. Results from the tests on a prototype and a simulation elucidate the practicality of the proposed circuit.

  3. Capacitive MEMS-based sensors : thermo-mechanical stability and charge trapping

    OpenAIRE

    van Essen, M.C.

    2009-01-01

    Micro-Electro Mechanical Systems (MEMS) are generally characterized as miniaturized systems with electrostatically driven moving parts. In many cases, the electrodes are capacitively coupled. This basic scheme allows for a plethora of specifications and functionality. This technology has presently matured and is widely employed in industry. A voltage across the electrodes will attract the movable part. This relation between electric field and separation (or capacitance) can be conveniently em...

  4. Greedy Deep Dictionary Learning

    OpenAIRE

    Tariyal, Snigdha; Majumdar, Angshul; Singh, Richa; Vatsa, Mayank

    2016-01-01

    In this work we propose a new deep learning tool called deep dictionary learning. Multi-level dictionaries are learnt in a greedy fashion, one layer at a time. This requires solving a simple (shallow) dictionary learning problem, the solution to this is well known. We apply the proposed technique on some benchmark deep learning datasets. We compare our results with other deep learning tools like stacked autoencoder and deep belief network; and state of the art supervised dictionary learning t...

  5. Compensation of the detector capacitance presented to charge-sensitive preamplifiers using the Miller effect

    Energy Technology Data Exchange (ETDEWEB)

    Kwon, Inyong, E-mail: iykwon@umich.edu [University of Michigan, Ann Arbor, MI (United States); Kang, Taehoon, E-mail: thnkang@umich.edu [University of Michigan, Ann Arbor, MI (United States); Wells, Byron T., E-mail: wells@galtresearch.com [Galt LLC, Ypsilanti, MI (United States); D’Aries, Lawrence J., E-mail: lawrence.j.daries.civ@mail.mil [Picatinny Arsenal, Rockaway Township, NJ (United States); Hammig, Mark D., E-mail: hammig@umich.edu [University of Michigan, Ann Arbor, MI (United States)

    2015-06-01

    This paper describes an integrated circuit design for a modified charge-sensitive amplifier (CSA) that compensates for the effect of capacitance presented by nuclear radiation detectors and other sensors. For applications that require large area semiconductor detectors or for those semiconductor sensors derived from high permittivity materials such as PbSe, the detector capacitance can degrade the system gain and bandwidth of a front-end preamplifier, resulting in extended rise times and attenuated output voltage signals during pulse formation. In order to suppress the effect of sensor capacitance, we applied a bootstrap technique into a traditional CSA. The technique exploits the Miller effect by reducing the effective voltage difference between the two sides of a radiation detector which minimizes the capacitance presented to the differential common-source amplifier. This new configuration is successfully designed to produce effective gain even at high detector capacitance. The entire circuit, including a core CSA with feedback components and a bootstrap amplifier, are implemented in a 0.18 μm CMOS process with a 3.3 V supply voltage. - Highlights: • A modified CSA was implemented for detector capacitance compensation. • Increasing detector capacitance degrades gain and rise time. • A bootstrap amplifier exploiting the Miller effect is described. • It allows using large area radiation sensors for high radiation-interaction rates. • Intensive noise analyses show that SNR is much better with the technique.

  6. Capacitive performance of molybdenum nitride/titanium nitride nanotube array for supercapacitor

    Energy Technology Data Exchange (ETDEWEB)

    Xie, Yibing, E-mail: ybxie@seu.edu.cn; Tian, Fang

    2017-01-15

    Highlights: • MoN{sub x}/TiN NTA is fully converted from MoO{sub 2}/TiO{sub 2} NTA by one-step nitridation process. • MoN{sub x}/TiN NTA is used as feasible electrode material of high-performance supercapacitor. • MoN{sub x}/TiN NTA shows high capacitance, rate capability and cycling stability. - Abstract: Molybdenum nitride (MoN{sub x}) depositing on titanium nitride nanotube array (TiN NTA) was designed as MoN{sub x}/TiN NTA for supercapacitor electrode material. MoN{sub x}/TiN NTA was fabricated by electrodepositing molybdenum oxide onto titanium dioxide NTA and one-step nitridation treatment in ammonia. MoN{sub x}/TiN NTA involved top-surface layer of MoN{sub x} nanoparticles and underlying layer of TiN NTA, which contributed to electric double layer capacitance in aqueous lithium-ion electrolyte solution. The specific capacitance was increased from 69.05 mF cm{sup −2} for TiN NTA to 121.50 mF cm{sup −2} for MoN{sub x}/TiN NTA at 0.3 mA cm{sup −2}, presenting the improved capacitance performance. MoN{sub x} exhibited the capacitance of 174.83 F g{sup −1} at 1.5 A g{sup −1} and slightly declined to 109.13 F g{sup −1} at 30 A g{sup −1}, presenting high rate capability. MoN{sub x}/TiN NTA exhibited the capacitance retention ratio of 93.8% at 3.0 mA cm{sup −2} after 1000 cycles, presenting high cycling stability. MoN{sub x}/TiN NTA could act as a promising electrode material of supercapacitor.

  7. DNA Nucleotides Detection via capacitance properties of Graphene

    Science.gov (United States)

    Khadempar, Nahid; Berahman, Masoud; Yazdanpanah, Arash

    2016-05-01

    In the present paper a new method is suggested to detect the DNA nucleotides on a first-principles calculation of the electronic features of DNA bases which chemisorbed to a graphene sheet placed between two gold electrodes in a contact-channel-contact system. The capacitance properties of graphene in the channel are surveyed using non-equilibrium Green's function coupled with the Density Functional Theory. Thus, the capacitance properties of graphene are theoretically investigated in a biological environment, and, using a novel method, the effect of the chemisorbed DNA nucleotides on electrical charges on the surface of graphene is deciphered. Several parameters in this method are also extracted including Electrostatic energy, Induced density, induced electrostatic potential, Electron difference potential and Electron difference density. The qualitative and quantitative differences among these parameters can be used to identify DNA nucleotides. Some of the advantages of this approach include its ease and high accuracy. What distinguishes the current research is that it is the first experiment to investigate the capacitance properties of gaphene changes in the biological environment and the effect of chemisorbed DNA nucleotides on the surface of graphene on the charge.

  8. I–V, C–V and deep level transient spectroscopy study of 24 MeV ...

    Indian Academy of Sciences (India)

    This paper describes the effect of 24 MeV proton irradiation on the electrical characteristics of a pnp bipolar junction transistor 2N 2905A. –, – and DLTS measurements are carried out to characterize the transistor before and after irradiation. The properties of deep level defects observed in the bulk of the transistor are ...

  9. Inverter-based successive approximation capacitance-to-digital converter

    KAUST Repository

    Omran, Hesham

    2017-03-23

    An energy-efficient capacitance-to-digital converter (CDC) is provided that utilizes a capacitance-domain successive approximation (SAR) technique. Unlike SAR analog- to-digital converters (ADCs), analysis shows that for SAR CDCs, the comparator offset voltage will result in signal-dependent and parasitic-dependent conversion errors, which necessitates an op-amp-based implementation. The inverter-based SAR CDC contemplated herein provides robust, energy-efficient, and fast operation. The inverter- based SAR CDC may include a hybrid coarse-fine programmable capacitor array. The design of example embodiments is insensitive to analog references, and thus achieves very low temperature sensitivity without the need for calibration. Moreover, this design achieves improved energy efficiency.

  10. Actuatable capacitive transducer for quantitative nanoindentation combined with transmission electron microscopy

    Science.gov (United States)

    Warren, Oden L.; Asif, S. A. Syed; Cyrankowski, Edward; Kounev, Kalin

    2010-09-21

    An actuatable capacitive transducer including a transducer body, a first capacitor including a displaceable electrode and electrically configured as an electrostatic actuator, and a second capacitor including a displaceable electrode and electrically configured as a capacitive displacement sensor, wherein the second capacitor comprises a multi-plate capacitor. The actuatable capacitive transducer further includes a coupling shaft configured to mechanically couple the displaceable electrode of the first capacitor to the displaceable electrode of the second capacitor to form a displaceable electrode unit which is displaceable relative to the transducer body, and an electrically-conductive indenter mechanically coupled to the coupling shaft so as to be displaceable in unison with the displaceable electrode unit.-

  11. A Capacitive Humidity Sensor Based on Multi-Wall Carbon Nanotubes (MWCNTs

    Directory of Open Access Journals (Sweden)

    Zhen-Gang Zhao

    2009-09-01

    Full Text Available A new type of capacitive humidity sensor is introduced in this paper. The sensor consists of two plate electrodes coated with MWCNT films and four pieces of isolating medium at the four corners of the sensor. According to capillary condensation, the capacitance signal of the sensor is sensitive to relative humidity (RH, which could be transformed to voltage signal by a capacitance to voltage converter circuit. The sensor is tested using different saturated saline solutions at the ambient temperature of 25 °C, which yielded approximately 11% to 97% RH, respectively. The function of the MWCNT films, the effect of electrode distance, the temperature character and the repeatability of the sensor are discussed in this paper.

  12. Absolute Position Sensing Based on a Robust Differential Capacitive Sensor with a Grounded Shield Window

    Directory of Open Access Journals (Sweden)

    Yang Bai

    2016-05-01

    Full Text Available A simple differential capacitive sensor is provided in this paper to measure the absolute positions of length measuring systems. By utilizing a shield window inside the differential capacitor, the measurement range and linearity range of the sensor can reach several millimeters. What is more interesting is that this differential capacitive sensor is only sensitive to one translational degree of freedom (DOF movement, and immune to the vibration along the other two translational DOFs. In the experiment, we used a novel circuit based on an AC capacitance bridge to directly measure the differential capacitance value. The experimental result shows that this differential capacitive sensor has a sensitivity of 2 × 10−4 pF/μm with 0.08 μm resolution. The measurement range of this differential capacitive sensor is 6 mm, and the linearity error are less than 0.01% over the whole absolute position measurement range.

  13. Characterization of deep level defects and thermally stimulated depolarization phenomena in La-doped TlInS2 layered semiconductor

    International Nuclear Information System (INIS)

    Seyidov, MirHasan Yu.; Suleymanov, Rauf A.; Mikailzade, Faik A.; Kargın, Elif Orhan; Odrinsky, Andrei P.

    2015-01-01

    Lanthanum-doped high quality TlInS 2 (TlInS 2 :La) ferroelectric-semiconductor was characterized by photo-induced current transient spectroscopy (PICTS). Different impurity centers are resolved and identified. Analyses of the experimental data were performed in order to determine the characteristic parameters of the extrinsic and intrinsic defects. The energies and capturing cross section of deep traps were obtained by using the heating rate method. The observed changes in the Thermally Stimulated Depolarization Currents (TSDC) near the phase transition points in TlInS 2 :La ferroelectric-semiconductor are interpreted as a result of self-polarization of the crystal due to the internal electric field caused by charged defects. The TSDC spectra show the depolarization peaks, which are attributed to defects of dipolar origin. These peaks provide important information on the defect structure and localized energy states in TlInS 2 :La. Thermal treatments of TlInS 2 :La under an external electric field, which was applied at different temperatures, allowed us to identify a peak in TSDC which was originated from La-dopant. It was established that deep energy level trap BTE43, which are active at low temperature (T ≤ 156 K) and have activation energy 0.29 eV and the capture cross section 2.2 × 10 −14 cm 2 , corresponds to the La dopant. According to the PICTS results, the deep level trap center B5 is activated in the temperature region of incommensurate (IC) phases of TlInS 2 :La, having the giant static dielectric constant due to the structural disorders. From the PICTS simulation results for B5, native deep level trap having an activation energy of 0.3 eV and the capture cross section of 1.8 × 10 −16 cm 2 were established. A substantial amount of residual space charges is trapped by the deep level localized energy states of B5 in IC-phase. While the external electric field is applied, permanent dipoles, which are originated from the charged B5

  14. Overview of capacitive couplings in windings

    NARCIS (Netherlands)

    Djukic, N.; Encica, L.; Paulides, J.J.H.

    2015-01-01

    The use of electrical machines (EMs) with variable-frequency drives (VFDs) results in electromagnetic interference (EMI). At high frequencies (HFs) of conducted EMI, the impedance of an EM insulation system fed from a VFD is small due to the parasitic capacitive couplings. Thus, the conducted EMI

  15. Dynamics of the deep-level emission in ZnO nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Hou, Dongchao; Rueckmann, Ilja; Voss, Tobias [Institut fuer Festkoerperphysik, Universitaet Bremen (Germany)

    2010-07-01

    Due to its wide direct band gap and large exciton binding energy (60 meV), ZnO nanowires possess an efficient near band-edge emission (NBE) in UV range. Additional energy levels in the band gap of ZnO, commonly introduced by point defects such as oxygen or zinc vacancies and Cu impurities, can largely weaken the UV emission by providing extra recombination routes for the electrons in conduction band. In ZnO nanowires this deep-level emission band (DLE) is expected to be largely activated by tunneling processes of holes trapped in the surface depletion layer after optical excitation. We studied the dependence of the DLE and NBE intensities of ZnO nanowires on the excitation power at different temperatures. For the experiments, the fundamental (1064 nm) and frequency-tripled (355 nm) pulses of an Nd:YAG microchip laser were used. The additional infrared laser radiation was used to directly populate the defect levels with electrons from the valence band. Our results show that the additional infrared photons lead to a reduction of the DLE while the NBE is enhanced. We discuss the implications of our results for the models of DLE in ZnO nanowires.

  16. Studies on the deep-level defects in CdZnTe crystals grown by travelling heater method

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Boru; Jie, Wanqi; Wang, Tao; Xu, Lingyan; Yang, Fan; Yin, Liying; Fu, Xu [State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi' an (China); Key Laboratory of Radiation Detection Materials and Devices, Ministry of Industry and Information Technology, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi' an, Shaanxi (China); Nan, Ruihua [State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi' an (China); Shaanxi Key Laboratory of Optoelectronic Functional Materials and Devices, School of Materials and Chemical Engineering, Xi' an Technological University, Xi' an (China)

    2017-05-15

    The variation of deep level defects along the axis of CZT:In ingots grown by Travelling Heater Method was investigated by the means of thermally stimulated current (TSC) spectra. Models for the reaction among different defects In, Te{sub i}, and V{sub Cd} were used to analyze the variation of deep level defects along the growth direction. It was found that the density of In dopant-related defects is lower in the tip, but those of Te antisites and Te interstitials are higher in the tip. The density of cadmium vacancy exhibits an initial increase followed by a decrease from the tip to tail of the ingot. In PL spectra, the intensities of (D{sub 0}, X), (DAP) and D{sub complex} peaks obviously increase from the tip to the tail, due to the increase of the density of In dopant-related defects (IN{sup +}{sub CD}), Cd vacancies, and impurities. The low concentration of net free holes was found by Hall measurements, and high resistivity with p-type conduction was demonstrated from I-V analysis. The mobility for electrons was found to increase significantly from 634 ± 26 cm{sup 2} V{sup -1} s{sup -1} in the tip to 860 ± 10 cm{sup 2} V{sup -1} s{sup -1} in the tail, due to the decrease of the deep level defect densities. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  17. Simulation and optimization of a dc SQUID with finite capacitance

    Energy Technology Data Exchange (ETDEWEB)

    de Waal, V.J.; Schrijner, P.; Llurba, R.

    1984-02-01

    This paper deals with the calculations of the noise an the optimization of the energy resolution of a dc SQUID with finite junction capacitance. Up to now noise calculations of dc SQUIDs were performed using a model without parasitic capacitances across the Josephson junctions. As the capacitances limit the performance of the SQUID, for a good optimization one must take them into account. The model consists of two coupled nonlinear second-order differential equations. The equations are very suitable for simulation with an analog circuit. We implemented the model on a hybrid computer. The noise spectrum from the model is calculated with a fast Fourier transform. A calculation of the energy resolution for one set of parameters takes about 6 min of computer time. Detailed results of the optimization are given for products of inductance and temperature of LT = 1.2 and 5 nHK. Within a range of ..beta.. and ..beta../sub c/ between 1 and 2, which is optimum, the energy resolution is nearly independent of these variables. In this region the energy resolution is near the value calculated without parasitic capacitances. Results of the optimized energy resolution are given as a function of LT between 1.2 and 10 nHK.

  18. Simulation and optimization of a dc SQUID with finite capacitance

    Science.gov (United States)

    de Waal, V. J.; Schrijner, P.; Llurba, R.

    1984-02-01

    This paper deals with the calculations of the noise and the optimization of the energy resolution of a dc SQUID with finite junction capacitance. Up to now noise calculations of dc SQUIDs were performed using a model without parasitic capacitances across the Josephson junctions. As the capacitances limit the performance of the SQUID, for a good optimization one must take them into account. The model consists of two coupled nonlinear second-order differential equations. The equations are very suitable for simulation with an analog circuit. We implemented the model on a hybrid computer. The noise spectrum from the model is calculated with a fast Fourier transform. A calculation of the energy resolution for one set of parameters takes about 6 min of computer time. Detailed results of the optimization are given for products of inductance and temperature of LT=1.2 and 5 nH K. Within a range of β and β c between 1 and 2, which is optimum, the energy resolution is nearly independent of these variables. In this region the energy resolution is near the value calculated without parasitic capacitances. Results of the optimized energy resolution are given as a function of LT between 1.2 and 10 mH K.

  19. In-Line Capacitance Sensor for Real-Time Water Absorption Measurements

    Science.gov (United States)

    Nurge, Mark A.; Perusich, Stephen A.

    2010-01-01

    A capacitance/dielectric sensor was designed, constructed, and used to measure in real time the in-situ water concentration in a desiccant water bed. Measurements were carried out with two experimental setups: (1) passing nitrogen through a humidity generator and allowing the gas stream to become saturated at a measured temperature and pressure, and (2) injecting water via a syringe pump into a nitrogen stream. Both water vapor generating devices were attached to a downstream vertically-mounted water capture bed filled with 19.5 g of Moisture Gone desiccant. The sensor consisted of two electrodes: (1) a 1/8" dia stainless steel rod placed in the middle of the bed and (2) the outer shell of the stainless steel bed concentric with the rod. All phases of the water capture process (background, heating, absorption, desorption, and cooling) were monitored with capacitance. The measured capacitance was found to vary linearly with the water content in the bed at frequencies above 100 kHz indicating dipolar motion dominated the signal; below this frequency, ionic motion caused nonlinearities in the water concentration/capacitance relationship. The desiccant exhibited a dielectric relaxation whose activation energy was lowered upon addition of water indicating either a less hindered rotational motion or crystal reorientation.

  20. Changes in Sperm Motility and Capacitation Induce Chromosomal Aberration of the Bovine Embryo following Intracytoplasmic Sperm Injection.

    Directory of Open Access Journals (Sweden)

    Yoku Kato

    Full Text Available Intracytoplasmic sperm injection (ICSI has become the method of choice to treat human male infertility. One of the outstanding problems associated with this technique is our current lack of knowledge concerning the effect of sperm capacitation and motility upon the subsequent development of oocytes following ICSI. In the present study, we first examined the capacitation state of sperm exhibiting normal motility, along with sperm that had been activated, and examined the effect of reactive oxygen species (ROS produced by these sperm types upon embryogenesis following bovine in vitro fertilization (IVF and ICSI. Data showed that activated sperm reduced the chromosomal integrity of IVF/ICSI embryos at the blastocyst stage, while capacitated sperm produced ROS in capacitation media. Secondly, we treated sperm with carbonyl cyanide m-chlorophenyl hydrazine (CCCP, a chemical known to uncouple cell respiration within the mitochondria, and investigated the effect of this treatment upon blastocyst formation and chromosomal integrity at the blastocyst stage. Activated sperm in which the mitochondria had been treated with CCCP reduced levels of chromosomal aberration at the blastocyst stage following ICSI, by reducing mitochondrial activity in activated sperm. In conclusion, these findings suggest that capacitated sperm exhibiting activated motility induced chromosomal aberration during development to the blastocyst stage following ICSI. The injection of sperm exhibiting normal motility, or activated sperm in which mitochondrial activity had been reduced, improved the quality of ICSI-derived embryos. Therefore, the selection of sperm exhibiting progressive motility may not always be better for early embryo development and fetal growth following human ICSI, and that the use of a bovine model may contribute to a deeper understanding of sperm selection for human ICSI embryo development.

  1. Novel High Temperature Capacitive Pressure Sensor Utilizing SiC Integrated Circuit Twin Ring Oscillators

    Science.gov (United States)

    Scardelletti, M.; Neudeck, P.; Spry, D.; Meredith, R.; Jordan, J.; Prokop, N.; Krasowski, M.; Beheim, G.; Hunter, G.

    2017-01-01

    This paper describes initial development and testing of a novel high temperature capacitive pressure sensor system. The pressure sensor system consists of two 4H-SiC 11-stage ring oscillators and a SiCN capacitive pressure sensor. One oscillator has the capacitive pressure sensor fixed at one node in its feedback loop and varies as a function of pressure and temperature while the other provides a pressure-independent reference frequency which can be used to temperature compensate the output of the first oscillator. A two-day repeatability test was performed up to 500C on the oscillators and the oscillator fundamental frequency changed by only 1. The SiCN capacitive pressure sensor was characterized at room temperature from 0 to 300 psi. The sensor had an initial capacitance of 3.76 pF at 0 psi and 1.75 pF at 300 psi corresponding to a 54 change in capacitance. The integrated pressure sensor system was characterized from 0 to 300 psi in steps of 50 psi over a temperature range of 25 to 500C. The pressure sensor system sensitivity was 0.113 kHzpsi at 25C and 0.026 kHzpsi at 500C.

  2. Evaluation of Capacitive Markers Fabricated by 3D Printing, Laser Cutting and Prototyping

    Directory of Open Access Journals (Sweden)

    Julian Kreimeier

    2018-01-01

    Full Text Available With Tangible User Interfaces, the computer user is able to interact in a fundamentally different and more intuitive way than with usual 2D displays. By grasping real physical objects, information can also be conveyed haptically, i.e., the user not only sees information on a 2D display, but can also grasp physical representations. To recognize such objects (“tangibles” it is skillful to use capacitive sensing, as it happens in most touch screens. Thus, real objects can be located and identified by the touch screen display automatically. Recent work already addressed such capacitive markers, but focused on their coding scheme and automated fabrication by 3D printing. This paper goes beyond the fabrication by 3D printers and, for the first time, applies the concept of capacitive codes to laser cutting and another immediate prototyping approach using modeling clay. Beside the evaluation of additional properties, we adapt recent research results regarding the optimized detection of tangible objects on capacitive screens. As a result of our comprehensive study, the detection performance is affected by the type of capacitive signal processing (respectively the device and the geometry of the marker. 3D printing revealed to be the most reliable technique, though laser cutting and immediate prototyping of markers showed promising results. Based on our findings, we discuss individual strengths of each capacitive marker type.

  3. A Multifunction Low-Power Preamplifier for MEMS Capacitive Microphones

    DEFF Research Database (Denmark)

    Jawed, Syed Arsalan; Nielsen, Jannik Hammel; Gottardi, Massimo

    2009-01-01

    A multi-function two-stage chopper-stabilized preamplifier (PAMP) for MEMS capacitive microphones (MCM) is presented. The PAMP integrates digitally controllable gain, high-pass filtering and offset control, adding flexibility to the front-end readout of MCMs. The first stage of the PAMP consists...... of a source-follower (SF) while the second-stage is a capacitive gain stage. The second-stage employs chopper-stabilization (CHS), while SF buffer shields the MCM sensor from the switching spurs. The PAMP uses M poly bias resistors for the second-stage, exploiting Miller effect to achieve flat audio...

  4. Stray capacitances in the watt balance operation: electrostatic forces

    DEFF Research Database (Denmark)

    Quagliotti, Danilo; Mana, G.

    2014-01-01

    In a watt balance, stray capacitances exist between the coil and the magnet. Since the electric current flowing in the coil creates a difference in electric potentials between the coil and magnet, their electrostatic interactions must be taken into account. This paper reports the results of a fin......In a watt balance, stray capacitances exist between the coil and the magnet. Since the electric current flowing in the coil creates a difference in electric potentials between the coil and magnet, their electrostatic interactions must be taken into account. This paper reports the results...

  5. The application of the csamt method in the tectonic transformation of the deep-level fore exploration in the shandongkeng area in Nanxiong basin

    International Nuclear Information System (INIS)

    Xu Zhan

    2010-01-01

    With the national policy efforts on the strengthening of mining exploration, uranium exploration has also ushered in its second s pring . The topic of the new round exploration is P rospect the deeply minerals . Therefore, the changes of the deep structure of the mining area are the premise to carry out survey work. This article states briefly the working principle and characteristics of CSAMT method. The Application of the CSAMT Method in the Tectonic Transformation of The Deep-Level Exploration in the Shangdongkeng area in Nanxiong basin expresses that the method has a good application and effectiveness in research of deep geological objectives. It provides design basis for the mining exploration of deep-level area. (authors)

  6. Double resonance capacitance spectroscopy (DORCAS): A new experimental technique for assignment of X-ray absorption peaks to surface sites of semiconductor

    CERN Document Server

    Ishii, M

    2003-01-01

    As a new microspectroscopy for semiconductor surface analysis using an X-ray beam, double resonance capacitance spectroscopy (DORCAS) is proposed. For a microscopic X-ray absorption measurement, a local capacitance change owing to X-ray induced emission of localized electrons is detected by a microprobe. The applied bias voltage V sub b dependence of the capacitance also provides information on the surface density of state. The resonance of the Fermi energy with a surface level by V sub b control makes possible the selection of the observable surface site in the X-ray absorption measurements, i.e. site-specific spectroscopy. The double resonance of the surface site selection (V sub b resonance) and the resonant X-ray absorption of the selected site (photon energy h nu resonance) enhances the capacitance signal. The DORCAS measurement of the GaAs surface shows correlation peaks at h nu=10.402 keV and V sub b =-0.4 V and h nu=10.429 keV and V sub b =+0.1 V, indicating that these resonant X-ray absorption peaks ...

  7. Design of a MEMS Capacitive Comb-drive Micro-accelerometer with Sag Optimization

    Directory of Open Access Journals (Sweden)

    B. D. PANT

    2009-10-01

    Full Text Available The current paper presents an optimization study for the designing of a highly sensitive inertial grade capacitive accelerometer based on comb-drive actuation and sensing. The proof mass, suspension system (beams or tethers, stators and rotors have to be realized through an HAR (high aspect ratio DRIE (deep reactive ion etching process for which process optimization has already been done at our laboratory. As the proof mass is a bulk micro-machined structure having a mass in milligram range, the optimum positioning of the tethers on the proof mass is important to have minimum sag, necessary to reduce the off-axis sensitivity. The optimization for the positioning of the tethers has been carried out using a commercial software tool ANSYSTM Multiphysics. The accelerometer has been modeled analytically to predict its characteristics. The dependency of sensitivity on the dimensions of the suspension beams (tethers has also been verified using the above FEM software tool. The present device has been designed to deliver a high sensitivity of 13.6 mV/g/V for low-g applications.

  8. Characteristics Study of In-Situ Capacitive Sensor for Monitoring Lubrication Oil Debris.

    Science.gov (United States)

    Han, Zhibin; Wang, Yishou; Qing, Xinlin

    2017-12-08

    As an essential part of engine health monitoring (EHM), online lubrication oil debris monitoring has recently received great attention for the assessment of rotating and reciprocating parts in aero-engines, due to its high integration, low cost and safe characteristics. However, it is be a challenge to find a suitable sensor operating in such a complex environment. We present an unconventional novel approach, in which a cylinder capacitive sensor is designed and integrated with the pipeline of an engine lubrication system, so that the capacitive sensor can effectively detect changes in the lubrication oil condition. In this paper, an attempt to illustrate the performance characteristics of the developed cylinder capacitive sensor is made, through an experiment system that simulates a real scenario of a lubrication oil system. The main aim of the research was to qualitatively describe the relationship between the sensor parameter and the lubrication oil debris. In addition, the effect of the temperature and flow rate of the lubrication oil on capacitance change was performed by several experiments and we figured out a compensation method. The experimental results demonstrated that the cylinder capacitive sensor can potentially be used for lubrication oil debris monitoring of the health condition of an aero-engine.

  9. A High-Efficient Low-Cost Converter for Capacitive Wireless Power Transfer Systems

    Directory of Open Access Journals (Sweden)

    Il-Oun Lee

    2017-09-01

    Full Text Available Growth of the Internet of Things (IoT spurs need for new ways of delivering power. Wireless power transfer (WPT has come into the spotlight from both academia and industry as a promising way to power the IoT devices. As one of the well-known WPT techniques, the capacitive power transfer (CPT has the merit of low electromagnetic radiation and amenability of combined power and data transfer over a capacitive interface. However, applying the CPT to the IoT devices is still challenging in reality. One of the major issues is due to the small capacitance of the capacitive interface, which results in low efficiency of the power transfer. To tackle this problem, we present a new step-up single-switch quasi-resonant (SSQR converter for the CPT system. To enhance the CPT efficiency, the proposed converter is designed to operate at low frequency and drive small current into the capacitive interfaces. In addition, by eliminating resistor-capacitor-diode (RCD snubber in the converter, we reduce the implementation cost of the CPT system. Based on intensive experimental work with a CPT system prototype that supports maximum 50 W (100 V/0.5 A power transfer, we demonstrate the functional correctness of the converter that achieves up to 93% efficiency.

  10. Electropolymerized Star-Shaped Benzotrithiophenes Yield π-Conjugated Hierarchical Networks with High Areal Capacitance

    KAUST Repository

    Ringk, Andreas

    2016-03-30

    High-surface-area π-conjugated polymeric networks have the potential to lend outstanding capacitance to supercapacitors because of the pronounced faradaic processes that take place across the dense intimate interface between active material and electrolytes. In this report, we describe how benzo[1,2-b:3,4-b’:5,6-b’’]trithiophene (BTT) and tris-EDOT-benzo[1,2-b:3,4-b’:5,6-b’’]trithiophene (TEBTT) can serve as 2D (trivalent) building blocks in the development of electropolymerized hierarchical π-conjugated frameworks with particularly high areal capacitance. In comparing electropolymerized networks of BTT, TEBTT, and their copolymers with EDOT, we show that P(TEBTT/EDOT)-based frameworks can achieve higher areal capacitance (e.g., as high as 443.8 mF cm-2 at 1 mA cm-2) than those achieved by their respective homopolymers (PTEBTT and PEDOT) in the same experimental conditions of electrodeposition (PTEBTT: 271.1 mF cm-2 (at 1 mA cm-2) and PEDOT: 12.1 mF cm-2 (at 1 mA cm-2)). For example, P(TEBTT/EDOT)-based frameworks synthesized in a 1:1 monomer-to-comonomer ratio show a ca. 35x capacitance improvement over PEDOT. The high areal capacitance measured for P(TEBTT/EDOT) copolymers can be explained by the open, highly porous hierarchical morphologies formed during the electropolymerization step. With >70% capacitance retention over 1,000 cycles (up to 89% achieved), both PTEBTT- and P(TEBTT/EDOT)-based frameworks are resilient to repeated electrochemical cycling and can be considered promising systems for high life cycle capacitive electrode applications.

  11. Electropolymerized Star-Shaped Benzotrithiophenes Yield π-Conjugated Hierarchical Networks with High Areal Capacitance

    KAUST Repository

    Ringk, Andreas; Lignie, Adrien; Hou, Yuanfang; Alshareef, Husam N.; Beaujuge, Pierre

    2016-01-01

    High-surface-area π-conjugated polymeric networks have the potential to lend outstanding capacitance to supercapacitors because of the pronounced faradaic processes that take place across the dense intimate interface between active material and electrolytes. In this report, we describe how benzo[1,2-b:3,4-b’:5,6-b’’]trithiophene (BTT) and tris-EDOT-benzo[1,2-b:3,4-b’:5,6-b’’]trithiophene (TEBTT) can serve as 2D (trivalent) building blocks in the development of electropolymerized hierarchical π-conjugated frameworks with particularly high areal capacitance. In comparing electropolymerized networks of BTT, TEBTT, and their copolymers with EDOT, we show that P(TEBTT/EDOT)-based frameworks can achieve higher areal capacitance (e.g., as high as 443.8 mF cm-2 at 1 mA cm-2) than those achieved by their respective homopolymers (PTEBTT and PEDOT) in the same experimental conditions of electrodeposition (PTEBTT: 271.1 mF cm-2 (at 1 mA cm-2) and PEDOT: 12.1 mF cm-2 (at 1 mA cm-2)). For example, P(TEBTT/EDOT)-based frameworks synthesized in a 1:1 monomer-to-comonomer ratio show a ca. 35x capacitance improvement over PEDOT. The high areal capacitance measured for P(TEBTT/EDOT) copolymers can be explained by the open, highly porous hierarchical morphologies formed during the electropolymerization step. With >70% capacitance retention over 1,000 cycles (up to 89% achieved), both PTEBTT- and P(TEBTT/EDOT)-based frameworks are resilient to repeated electrochemical cycling and can be considered promising systems for high life cycle capacitive electrode applications.

  12. Fringe Capacitance of a Parallel-Plate Capacitor.

    Science.gov (United States)

    Hale, D. P.

    1978-01-01

    Describes an experiment designed to measure the forces between charged parallel plates, and determines the relationship among the effective electrode area, the measured capacitance values, and the electrode spacing of a parallel plate capacitor. (GA)

  13. Protein phosphatases decrease their activity during capacitation: a new requirement for this event.

    Directory of Open Access Journals (Sweden)

    Janetti R Signorelli

    Full Text Available There are few reports on the role of protein phosphatases during capacitation. Here, we report on the role of PP2B, PP1, and PP2A during human sperm capacitation. Motile sperm were resuspended in non-capacitating medium (NCM, Tyrode's medium, albumin- and bicarbonate-free or in reconstituted medium (RCM, NCM plus 2.6% albumin/25 mM bicarbonate. The presence of the phosphatases was evaluated by western blotting and the subcellular localization by indirect immunofluorescence. The function of these phosphatases was analyzed by incubating the sperm with specific inhibitors: okadaic acid, I2, endothall, and deltamethrin. Different aliquots were incubated in the following media: 1 NCM; 2 NCM plus inhibitors; 3 RCM; and 4 RCM plus inhibitors. The percent capacitated sperm and phosphatase activities were evaluated using the chlortetracycline assay and a phosphatase assay kit, respectively. The results confirm the presence of PP2B and PP1 in human sperm. We also report the presence of PP2A, specifically, the catalytic subunit and the regulatory subunits PR65 and B. PP2B and PP2A were present in the tail, neck, and postacrosomal region, and PP1 was present in the postacrosomal region, neck, middle, and principal piece of human sperm. Treatment with phosphatase inhibitors rapidly (≤1 min increased the percent of sperm depicting the pattern B, reaching a maximum of ∼40% that was maintained throughout incubation; after 3 h, the percent of capacitated sperm was similar to that of the control. The enzymatic activity of the phosphatases decreased during capacitation without changes in their expression. The pattern of phosphorylation on threonine residues showed a sharp increase upon treatment with the inhibitors. In conclusion, human sperm express PP1, PP2B, and PP2A, and the activity of these phosphatases decreases during capacitation. This decline in phosphatase activities and the subsequent increase in threonine phosphorylation may be an important

  14. Capacitance-voltage characterization of fully silicided gated MOS capacitor

    International Nuclear Information System (INIS)

    Wang Baomin; Ru Guoping; Jiang Yulong; Qu Xinping; Li Bingzong; Liu Ran

    2009-01-01

    This paper investigates the capacitance-voltage (C-V) measurement on fully silicided (FUSI) gated metal-oxide-semiconductor (MOS) capacitors and the applicability of MOS capacitor models. When the oxide leakage current of an MOS capacitor is large, two-element parallel or series model cannot be used to obtain its real C-V characteristic. A three-element model simultaneously consisting of parallel conductance and series resistance or a four-element model with further consideration of a series inductance should be used. We employed the three-element and the four-element models with the help of two-frequency technique to measure the Ni FUSI gated MOS capacitors. The results indicate that the capacitance of the MOS capacitors extracted by the three-element model still shows some frequency dispersion, while that extracted by the four-element model is close to the real capacitance, showing little frequency dispersion. The obtained capacitance can be used to calculate the dielectric thickness with quantum effect correction by NCSU C-V program. We also investigated the influence of MOS capacitor's area on the measurement accuracy. The results indicate that the decrease of capacitor area can reduce the dissipation factor and improve the measurement accuracy. As a result, the frequency dispersion of the measured capacitance is significantly reduced, and real C-V characteristic can be obtained directly by the series model. In addition, this paper investigates the quasi-static C-V measurement and the photonic high-frequency C-V measurement on Ni FUSI metal gated MOS capacitor with a thin leaky oxide. The results indicate that the large tunneling current through the gate oxide significantly perturbs the accurate measurement of the displacement current, which is essential for the quasi-static C-V measurement. On the other hand, the photonic high-frequency C-V measurement can bypass the leakage problem, and get reliable low-frequency C-V characteristic, which can be used to

  15. DeepMirTar: a deep-learning approach for predicting human miRNA targets.

    Science.gov (United States)

    Wen, Ming; Cong, Peisheng; Zhang, Zhimin; Lu, Hongmei; Li, Tonghua

    2018-06-01

    MicroRNAs (miRNAs) are small noncoding RNAs that function in RNA silencing and post-transcriptional regulation of gene expression by targeting messenger RNAs (mRNAs). Because the underlying mechanisms associated with miRNA binding to mRNA are not fully understood, a major challenge of miRNA studies involves the identification of miRNA-target sites on mRNA. In silico prediction of miRNA-target sites can expedite costly and time-consuming experimental work by providing the most promising miRNA-target-site candidates. In this study, we reported the design and implementation of DeepMirTar, a deep-learning-based approach for accurately predicting human miRNA targets at the site level. The predicted miRNA-target sites are those having canonical or non-canonical seed, and features, including high-level expert-designed, low-level expert-designed, and raw-data-level, were used to represent the miRNA-target site. Comparison with other state-of-the-art machine-learning methods and existing miRNA-target-prediction tools indicated that DeepMirTar improved overall predictive performance. DeepMirTar is freely available at https://github.com/Bjoux2/DeepMirTar_SdA. lith@tongji.edu.cn, hongmeilu@csu.edu.cn. Supplementary data are available at Bioinformatics online.

  16. Molecular Insights into Carbon Nanotube Supercapacitors: Capacitance Independent of Voltage and Temperature

    Energy Technology Data Exchange (ETDEWEB)

    Feng, Guang [Vanderbilt Univ., Nashville, TN (United States). Dept. of Chemical and Biomolecular Engineering; Li, Song [Vanderbilt Univ., Nashville, TN (United States). Dept. of Chemical and Biomolecular Engineering; Atchison, Jennifer S. [Leibniz Inst. for New Materials (INM), Saarbrücken (Germany); Presser, Volker [Leibniz Inst. for New Materials (INM), Saarbrücken (Germany); Cummings, Peter T. [Vanderbilt Univ., Nashville, TN (United States). Dept. of Chemical and Biomolecular Engineering; Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science

    2013-04-12

    Molecular dynamics (MD) simulations of supercapacitors with single-walled carbon nanotube (SWCNT) electrodes in room-temperature ionic liquids were performed to investigate the influences of the applied electrical potential, the radius/curvature of SWCNTs, and temperature on their capacitive behavior. It is found that (1) SWCNTs-based supercapacitors exhibit a near-flat capacitance–potential curve, (2) the capacitance increases as the tube radius decreases, and (3) the capacitance depends little on the temperature. We report the first MD study showing the influence of the electrode curvature on the capacitance–potential curve and negligible dependence of temperature on capacitance of tubular electrode. The latter is in good agreement with recent experimental findings and is attributed to the similarity of the electrical double layer (EDL) microstructure with temperature varying from 260 to 400 K. The electrode curvature effect is explained by the dominance of charge overscreening and increased ion density per unit area of electrode surface.

  17. 3D simulations and modeling of new low capacitance silicon pixel detectors

    Energy Technology Data Exchange (ETDEWEB)

    Xiong, Bo; Li, Yu Yun [School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105 (China); Center for Semiconductor Particle and photon Imaging Detector Development and Fabrication, Xiangtan University, Xiangtan 411105 (China); Li, Zheng, E-mail: zhengli58@gmail.com [School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105 (China); Center for Semiconductor Particle and photon Imaging Detector Development and Fabrication, Xiangtan University, Xiangtan 411105 (China)

    2016-09-21

    With signal to noise ratio (S/N) being a key parameter of a high performance detector, reducing the detector noise has been one of the main tasks in detector development. A new low capacitance silicon pixel detector is proposed, which is based on a new electrode geometry with reduced effective electrode area while keeping the sensitive volume unchanged. Detector electrical characteristics including electrostatic potential, electric field, full depletion voltage, and capacitance have been simulated in detail using a 3D TCAD tool. From these simulations and calculations, we confirm that the new detector structure has a much reduced capacitance (by a factor of 3) as compared to the traditional pixel detectors with the same sensitive volume. This reduction in detector capacitance can certainly improve the detector signal to noise ratio. However, the full depletion voltage for the new structure is larger than that of the traditional one due to the small electrode effect.

  18. Charge deep-level transient spectroscopy study of high-energy-electron-beam-irradiated hydrogenated amorphous silicon

    NARCIS (Netherlands)

    Klaver, A.; Nádaždy, V.; Zeman, M.; Swaaiij, R.A.C.M.M.

    2006-01-01

    We present a study of changes in the defect density of states in hydrogenated amorphous silicon (a-Si:H) due to high-energy electron irradiation using charged deep-level transient spectroscopy. It was found that defect states near the conduction band were removed, while in other band gap regions the

  19. Effects of electrolytic composition on the electric double-layer capacitance at smooth-surface carbon electrodes in organic media

    International Nuclear Information System (INIS)

    Kim, In-Tae; Egashira, Minato; Yoshimoto, Nobuko; Morita, Masayuki

    2010-01-01

    As a fundamental research on the optimization of electrolyte composition in practical electrochemical capacitor device, double-layer capacitance at Glassy Carbon (GC) and Boron-doped Diamond (BDD), as typical smooth-surface carbon electrodes, has been studied as a function of the electrolyte composition in organic media. Specific capacitance (differential capacitance: F cm -2 ) determined by an AC impedance method, in which no contribution of mass-transport effects is included, corresponded well to integrated capacitance evaluated by conventional cyclic voltammetry. The specific capacitance at the GC electrode varied with polarized potential and showed clear PZC (potential of zero charge), while the potential dependence of the capacitance at BDD was very small. The effects of the solvent and the electrolytic salt on the capacitance behavior were common for both electrodes. That is, the sizes of the solvent molecule and the electrolytic ion (cation) strongly affected the capacitance at these smooth-surface carbon electrodes.

  20. Assessing the Level of Disability, Deep Cervical Flexor Endurance and Fear Avoidance Beliefs in Bankers with Neck Pain

    Directory of Open Access Journals (Sweden)

    Deptee Warikoo

    2013-08-01

    Full Text Available Objective: To assess the level of disability, the deep cervical flexor endurance and fear avoidance beliefs (FAB in bankers with neck pain and to find a correlation between disability and deep cervical muscle endurance, FAB and disability, FAB and deep flexor muscle endurance. Methods: It ws an observational study. The Subjects who had neck pain and minimum 5 years’ experience as a Banker participated in the study. Total 100 subjects were selected. All the subjects were assessed for their disability by the neck pain and disability score (NPDI, their deep cervical flexor endurance using Pressure Biofeedback using Cranio-Cervical flexion test (CCFT and Fear Avoidance Belief by using questionnaire( FABQ. Results: It was found that bankers have a moderate level of disability. The results showed an elevated fear avoidance belief with a mean value of FABQ-PA 21.61±4.42 and FABQ-W 37.81± 5.69. The results indicated that a negative correlation was found between NPDI and CCFT (r=0.855. A positive correlation was found between NPDI and FABQ-PA(r=0.337, FABQ-W(r=0.500. In the present study a negative correlation was found between CCFT and FABQ-W(r=0.553, FABQ-PA (0.348 and positive correlation (r=0.540 was found between FABQ-PA and FABQ-W. Conclusion: The present study concluded that there was a significant level of disability and significantly decreased endurance level and increased fear avoidance beliefs (both work and physical activity related among bankers with neck pain. In addition to that there was a significant correlation found between NPDI and CCFT, NPDI and FABQ, CCFT and FABQ, FABQ-W and FABQ-PA.

  1. Na/K-ATPase regulates bovine sperm capacitation through raft- and non-raft-mediated signaling mechanisms.

    Science.gov (United States)

    Rajamanickam, Gayathri D; Kastelic, John P; Thundathil, Jacob C

    2017-11-01

    Highly dynamic lipid microdomains (rafts) in the sperm plasma membrane contain several signaling proteins that regulate sperm capacitation. Na/K-ATPase isoforms (testis-specific isoform ATP1A4 and ubiquitous isoform ATP1A1) are abundant in bovine sperm plasma membrane. We previously reported that incubation of bovine sperm with ouabain, a specific Na/K-ATPase ligand, induced tyrosine phosphorylation of several sperm proteins during capacitation. The objective of this study was to investigate the roles of lipid rafts and non-rafts in Na/K-ATPase enzyme activity and signaling during bovine sperm capacitation. Content of ATP1A4 and, to a lesser extent, ATP1A1 was increased in raft and non-raft fractions of capacitated sperm, although non-raft enzyme activities of both isoforms were higher than the corresponding activities in rafts from capacitated sperm. Yet, ATP1A4 was the predominant isoform responsible for total Na/K-ATPase activity in both rafts and non-rafts. A comparative increase in phosphorylation of signaling molecules was observed in both raft (CAV1) and non-raft (EGFR and ERK1/2) membrane fractions during capacitation. Although SRC was phosphorylated in both membrane fractions, the non-raft fraction possessed more of this activated form. We also inferred, by immunoprecipitation, that ATP1A4 interacted with CAV1 and EGFR in the raft fraction, whereas interactions of ATP1A4 with SRC, EGFR, and ERK1/2 occurred in the non-raft fraction of ouabain-capacitated sperm; conversely, ATP1A1 interacted only with CAV1 in both fractions of uncapacitated and capacitated sperm. In conclusion, both raft and non-raft cohorts of Na/K-ATPase isoforms contributed to phosphorylation of signaling molecules during bovine sperm capacitation. © 2017 Wiley Periodicals, Inc.

  2. Robust and conductive two-dimensional metal-organic frameworks with exceptionally high volumetric and areal capacitance

    Science.gov (United States)

    Feng, Dawei; Lei, Ting; Lukatskaya, Maria R.; Park, Jihye; Huang, Zhehao; Lee, Minah; Shaw, Leo; Chen, Shucheng; Yakovenko, Andrey A.; Kulkarni, Ambarish; Xiao, Jianping; Fredrickson, Kurt; Tok, Jeffrey B.; Zou, Xiaodong; Cui, Yi; Bao, Zhenan

    2018-01-01

    For miniaturized capacitive energy storage, volumetric and areal capacitances are more important metrics than gravimetric ones because of the constraints imposed by device volume and chip area. Typically used in commercial supercapacitors, porous carbons, although they provide a stable and reliable performance, lack volumetric performance because of their inherently low density and moderate capacitances. Here we report a high-performing electrode based on conductive hexaaminobenzene (HAB)-derived two-dimensional metal-organic frameworks (MOFs). In addition to possessing a high packing density and hierarchical porous structure, these MOFs also exhibit excellent chemical stability in both acidic and basic aqueous solutions, which is in sharp contrast to conventional MOFs. Submillimetre-thick pellets of HAB MOFs showed high volumetric capacitances up to 760 F cm-3 and high areal capacitances over 20 F cm-2. Furthermore, the HAB MOF electrodes exhibited highly reversible redox behaviours and good cycling stability with a capacitance retention of 90% after 12,000 cycles. These promising results demonstrate the potential of using redox-active conductive MOFs in energy-storage applications.

  3. Point defects in gallium arsenide characterized by positron annihilation spectroscopy and deep level transient spectroscopy

    International Nuclear Information System (INIS)

    Mih, R.; Gronsky, R.; Sterne, P.A.

    1995-01-01

    Positron annihilation lifetime spectroscopy (PALS) is a unique technique for detection of vacancy related defects in both as-grown and irradiated materials. The authors present a systematic study of vacancy defects in stoichiometrically controlled p-type Gallium Arsenide grown by the Hot-Wall Czochralski method. Microstructural information based on PALS, was correlated to crystallographic data and electrical measurements. Vacancies were detected and compared to electrical levels detected by deep level transient spectroscopy and stoichiometry based on crystallographic data

  4. Capacitive Structures for Gas and Biological Sensing

    KAUST Repository

    Sapsanis, Christos

    2015-04-01

    The semiconductor industry was benefited by the advances in technology in the last decades. This fact has an impact on the sensors field, where the simple transducer was evolved into smart miniaturized multi-functional microsystems. However, commercially available gas and biological sensors are mostly bulky, expensive, and power-hungry, which act as obstacles to mass use. The aim of this work is gas and biological sensing using capacitive structures. Capacitive sensors were selected due to its design simplicity, low fabrication cost, and no DC power consumption. In the first part, the dominant structure among interdigitated electrodes (IDEs), fractal curves (Peano and Hilbert) and Archimedean spiral was investigated from capacitance density perspective. The investigation consists of geometrical formula calculations, COMSOL Multiphysics simulations and cleanroom fabrication of the capacitors on a silicon substrate. Moreover, low-cost fabrication on flexible plastic PET substrate was conducted outside cleanroom with rapid prototyping using a maskless laser etching. The second part contains the humidity, Volatile Organic compounds (VOCs) and Ammonia sensing of polymers, Polyimide and Nafion, and metal-organic framework (MOF), Cu(bdc)2.xH2O using IDEs and tested in an automated gas setup for experiment control and data extraction. The last part includes the biological sensing of C - reactive protein (CRP) quantification, which is considered as a biomarker of being prone to cardiac diseases and Bovine serum albumin (BSA) protein quantification, which is used as a reference for quantifying unknown proteins.

  5. Complementary surface charge for enhanced capacitive deionization

    NARCIS (Netherlands)

    Gao, X.; Porada, S.; Omosebi, A.; Liu, K.L.; Biesheuvel, P.M.; Landon, J.

    2016-01-01

    Commercially available activated carbon cloth electrodes are treated using nitric acid and ethylenediamine solutions, resulting in chemical surface charge enhanced carbon electrodes for capacitive deionization (CDI) applications. Surface charge enhanced electrodes are then configured in a CDI

  6. Electrochemical capacitive performances of nanoporous carbon derived from sunflower seed shell

    Energy Technology Data Exchange (ETDEWEB)

    Li, X; Xing, W.; Zhuo, S.; Zhou, J. [Shandong Univ. of Technology, Zibo (China). School of Chemical Engineering

    2010-07-01

    Electrochemical double-layer capacitances (EDLCs) are used in applications were high power density and long cycle life are required. Nanoporous materials are typically used to prepare EDLC electrodes due to their high surface area, good physicochemical stability, and high conductivity. In this study, nanoporous carbon materials were prepared from sunflower seed shells and used as an electrode material for an EDLC. The surface and structural properties of the carbon materials were analyzed using N{sub 2} adsorption and scanning electron microscopy (SEM) techniques. The study showed that AC-X-Y carbons prepared using the impregnation-activation process had a better capacitive behaviour and higher capacitance retention ratio at fast charge-discharge rates than carbons made using the carbonization-activation process. The improved electrochemical performance of the carbons was attributed to the abundant macroscopic pores and decreased interior micropore surface. The specific capacitances of the carbon was approximately twice that of a hard-templated mesoporous carbon in all current densities ranging from 0.25 to 10 A per g. Results indicated that sunflower seed shells can be used to prepare EDLCs. 2 refs., 1 fig.

  7. Nanocomposite of polyaniline nanorods grown on graphene nanoribbons for highly capacitive pseudocapacitors.

    Science.gov (United States)

    Li, Lei; Raji, Abdul-Rahman O; Fei, Huilong; Yang, Yang; Samuel, Errol L G; Tour, James M

    2013-07-24

    A facile and cost-effective approach to the fabrication of a nanocomposite material of polyaniline (PANI) and graphene nanoribbons (GNRs) has been developed. The morphology of the composite was characterized by scanning electron microscopy, transmission electron microscopy, X-ray photoelectron microscopy, and X-ray diffraction analysis. The resulting composite has a high specific capacitance of 340 F/g and stable cycling performance with 90% capacitance retention over 4200 cycles. The high performance of the composite results from the synergistic combination of electrically conductive GNRs and highly capacitive PANI. The method developed here is practical for large-scale development of pseudocapacitor electrodes for energy storage.

  8. Influence of deposition conditions on electrical and mechanical properties of Sm2O3-doped CeO2 thin films prepared by EB-PVD (+IBAD) methods. Part 1: Effective relative permittivity

    Science.gov (United States)

    Hartmanová, Mária; Nádaždy, Vojtech; Kundracik, František; Mansilla, Catina

    2013-03-01

    Study is devoted to the effective relative permittivity ɛr of CeO2 + x. Sm2O3 thin films prepared by electron-beam physical vapour deposition and ionic beam-assisted deposition methods; ɛr was investigated by three independent ways from the bulk parallel capacitance Cp, impedance capacitance Cimp, and accumulation capacitance Cacc in dependence on the deposition conditions (deposition temperature, dopant amount x and Ar+ ion bombardment during the film deposition) used. Investigations were performed using impedance spectroscopy, capacitance-voltage and current-voltage characteristics as well as deep level transient spectroscopy. Results obtained are described and discussed.

  9. Deep Vein Thrombosis

    African Journals Online (AJOL)

    OWNER

    Deep Vein Thrombosis: Risk Factors and Prevention in Surgical Patients. Deep Vein ... preventable morbidity and mortality in hospitalized surgical patients. ... the elderly.3,4 It is very rare before the age ... depends on the risk level; therefore an .... but also in the post-operative period. ... is continuing uncertainty regarding.

  10. Large capacitance enhancement induced by metal-doping in graphene-based supercapacitors: a first-principles-based assessment.

    Science.gov (United States)

    Paek, Eunsu; Pak, Alexander J; Hwang, Gyeong S

    2014-08-13

    Chemically doped graphene-based materials have recently been explored as a means to improve the performance of supercapacitors. In this work, we investigate the effects of 3d transition metals bound to vacancy sites in graphene with [BMIM][PF6] ionic liquid on the interfacial capacitance; these results are compared to the pristine graphene case with particular attention to the relative contributions of the quantum and electric double layer capacitances. Our study highlights that the presence of metal-vacancy complexes significantly increases the availability of electronic states near the charge neutrality point, thereby enhancing the quantum capacitance drastically. In addition, the use of metal-doped graphene electrodes is found to only marginally influence the microstructure and capacitance of the electric double layer. Our findings indicate that metal-doping of graphene-like electrodes can be a promising route toward increasing the interfacial capacitance of electrochemical double layer capacitors, primarily by enhancing the quantum capacitance.

  11. Development of Image Reconstruction Algorithms in electrical Capacitance Tomography; Desarrollo de algoritmos de reconstruccion de imagenes en tomografia de capacitancia electrica

    Energy Technology Data Exchange (ETDEWEB)

    Fernandez Marron, J. L.; Alberdi Primicia, J.; Barcala Riveira, J. M.

    2007-12-28

    The Electrical Capacitance Tomography (ECT) has not obtained a good development in order to be used at industrial level. That is due first to difficulties in the measurement of very little capacitances (in the range of femto farads) and second to the problem of reconstruction on- line of the images. This problem is due also to the small numbers of electrodes (maximum 16), that made the usual algorithms of reconstruction has many errors. In this work it is described a new purely geometrical method that could be used for this purpose. (Author) 4 refs.

  12. Acrosin release and acrosin activity during incubation in capacitating media using fresh and frozen-thawed dog sperm

    Directory of Open Access Journals (Sweden)

    Mónica de los Reyes

    2011-01-01

    Full Text Available We evaluated the effect of time and temperature on acrosin release from the acrosomal cap and the activity of this enzyme during in vitro capacitation in fresh and frozen/thawed dog sperm. Sperm-rich fractions of six ejaculates from three dogs were processed as fresh and frozen samples. Each sperm sample was incubated in canine capacitation medium (CCM for 0, 1, 2 and 3 h at 20°C and at 37°C. After incubation, the samples were assessed by the indirect immunofluorescent staining technique. The probability of having unlabeled sperm (PUS, indicating acrosin loss, was modelled by a binomial distribution using logistic regression. There was a linear relationship between PUS and time at both temperatures (p<0.001; however, a major percentage of unlabeled sperm was observed in frozen/thawed samples soon after incubation, indicating that the release of acrosin was affected by capacitation time, mainly in frozen samples. Temperature influenced acrosin release only in cryopreserved sperm (p<0.05. Acrosin activity was measured by digestion halos on slides coated with gelatin-substrate film during each time period; a significant increase in the number of large halos was observed in fresh samples throughout the experiment, whereas frozen/thawed sperm showed a decreased rate of halo diameters during culture. Thus, there appears to differences between fresh and frozen dog sperm in terms of acrosin release and the level of acrosin activity in the course of in vitro capacitation.

  13. Direct-conversion switching-mode audio power amplifier with active capacitive voltage clamp

    Energy Technology Data Exchange (ETDEWEB)

    Ljusev, P.; Andersen, Michael A.E.

    2005-07-01

    This paper discusses the advantages and problems when implementing direct energy conversion switching-mode audio power amplifiers. It is shown that the total integration of the power supply and Class D audio power amplifier into one compact direct converter can simplify design, increase efficiency and integration level, reduce product volume and lower its cost. As an example, the principle of operation and the measurements made on a direct-conversion switching-mode audio power amplifier with active capacitive voltage clamp are presented. (au)

  14. Characterization of deep level defects and thermally stimulated depolarization phenomena in La-doped TlInS{sub 2} layered semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Seyidov, MirHasan Yu., E-mail: smirhasan@gyte.edu.tr; Suleymanov, Rauf A.; Mikailzade, Faik A. [Department of Physics, Gebze Technical University, Gebze, Kocaeli 41400 (Turkey); Institute of Physics of NAS of Azerbaijan, H. Javid ave. 33, Baku AZ-1143 (Azerbaijan); Kargın, Elif Orhan [Department of Physics, Gebze Technical University, Gebze, Kocaeli 41400 (Turkey); Odrinsky, Andrei P. [Institute of Technical Acoustics, National Academy of Sciences of Belarus, Lyudnikov ave. 13, Vitebsk 210717 (Belarus)

    2015-06-14

    Lanthanum-doped high quality TlInS{sub 2} (TlInS{sub 2}:La) ferroelectric-semiconductor was characterized by photo-induced current transient spectroscopy (PICTS). Different impurity centers are resolved and identified. Analyses of the experimental data were performed in order to determine the characteristic parameters of the extrinsic and intrinsic defects. The energies and capturing cross section of deep traps were obtained by using the heating rate method. The observed changes in the Thermally Stimulated Depolarization Currents (TSDC) near the phase transition points in TlInS{sub 2}:La ferroelectric-semiconductor are interpreted as a result of self-polarization of the crystal due to the internal electric field caused by charged defects. The TSDC spectra show the depolarization peaks, which are attributed to defects of dipolar origin. These peaks provide important information on the defect structure and localized energy states in TlInS{sub 2}:La. Thermal treatments of TlInS{sub 2}:La under an external electric field, which was applied at different temperatures, allowed us to identify a peak in TSDC which was originated from La-dopant. It was established that deep energy level trap BTE43, which are active at low temperature (T ≤ 156 K) and have activation energy 0.29 eV and the capture cross section 2.2 × 10{sup −14} cm{sup 2}, corresponds to the La dopant. According to the PICTS results, the deep level trap center B5 is activated in the temperature region of incommensurate (IC) phases of TlInS{sub 2}:La, having the giant static dielectric constant due to the structural disorders. From the PICTS simulation results for B5, native deep level trap having an activation energy of 0.3 eV and the capture cross section of 1.8 × 10{sup −16} cm{sup 2} were established. A substantial amount of residual space charges is trapped by the deep level localized energy states of B5 in IC-phase. While the external electric field is applied, permanent dipoles

  15. Designing a robust high-speed CMOS-MEMS capacitive humidity sensor

    International Nuclear Information System (INIS)

    Lazarus, N; Fedder, G K

    2012-01-01

    In our previous work (Lazarus and Fedder 2011 J. Micromech. Microeng. 21 0650281), we demonstrated a CMOS-MEMS capacitive humidity sensor with a 72% improvement in sensitivity over the highest previously integrated on a CMOS die. This paper explores a series of methods for creating a faster and more manufacturable high-sensitivity capacitive humidity sensor. These techniques include adding oxide pillars to hold the plates apart, spin coating polymer to allow sensors to be fabricated more cheaply, adding a polysilicon heater and etching away excess polymer in the release holes. In most cases a tradeoff was found between sensitivity and other factors such as response time or robustness. A robust high-speed sensor was designed with a sensitivity of 0.21% change in capacitance per per cent relative humidity, while dropping the response time constant from 70 to 4s. Although less sensitive than our design, the sensor remains 17% more sensitive than the most sensitive interdigitated designs successfully integrated with CMOS. (paper)

  16. Deep and shallow acceptor levels in solid solutions Pb0.98Sm0.02S

    International Nuclear Information System (INIS)

    Hasanov, H.A.; Rahimov, R.Sh.

    2010-01-01

    It is well known that the metal vacancies the energy levels of which take place between permitted energies of valency band, are the main acceptor centers in the led salts and solid solutions on their base. The aim of the given paper is founding of character of acceptor levels in single crystals Pb 0 .98Sm 0 .02S with low concentrations of charge carrier. The deep and shallow acceptor levels are found at investigation of Hall effect in Pb 0 .98Sm 0 .02S solid solution with character of low concentrations of charge carriers in crystals

  17. Deep levels in a-plane, high Mg-content MgxZn1−xO epitaxial layers grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Gür, Emre; Tabares, G.; Hierro, A.; Arehart, A.; Ringel, S. A.; Chauveau, J. M.

    2012-01-01

    Deep level defects in n-type unintentionally doped a-plane Mg x Zn 1−x O, grown by molecular beam epitaxy on r-plane sapphire were fully characterized using deep level optical spectroscopy (DLOS) and related methods. Four compositions of Mg x Zn 1−x O were examined with x = 0.31, 0.44, 0.52, and 0.56 together with a control ZnO sample. DLOS measurements revealed the presence of five deep levels in each Mg-containing sample, having energy levels of E c − 1.4 eV, 2.1 eV, 2.6 V, and E v + 0.3 eV and 0.6 eV. For all Mg compositions, the activation energies of the first three states were constant with respect to the conduction band edge, whereas the latter two revealed constant activation energies with respect to the valence band edge. In contrast to the ternary materials, only three levels, at E c − 2.1 eV, E v + 0.3 eV, and 0.6 eV, were observed for the ZnO control sample in this systematically grown series of samples. Substantially higher concentrations of the deep levels at E v + 0.3 eV and E c − 2.1 eV were observed in ZnO compared to the Mg alloyed samples. Moreover, there is a general invariance of trap concentration of the E v + 0.3 eV and 0.6 eV levels on Mg content, while at least and order of magnitude dependency of the E c − 1.4 eV and E c − 2.6 eV levels in Mg alloyed samples.

  18. Design and test of a capacitance detection circuit based on a transimpedance amplifier

    International Nuclear Information System (INIS)

    Mu Linfeng; Zhang Wendong; He Changde; Zhang Rui; Song Jinlong; Xue Chenyang

    2015-01-01

    This paper presents a transimpedance amplifier (TIA) capacitance detection circuit aimed at detecting micro-capacitance, which is caused by ultrasonic stimulation applied to the capacitive micro-machined ultrasonic transducer (CMUT). In the capacitance interface, a TIA is adopted to amplify the received signal with a center frequency of 400 kHz, and finally detect ultrasound pressure. The circuit has a strong anti-stray property and this paper also studies the calculation of compensation capacity in detail. To ensure high resolution, noise analysis is conducted. After optimization, the detected minimum ultrasound pressure is 2.1 Pa, which is two orders of magnitude higher than the former. The test results showed that the circuit was sensitive to changes in ultrasound pressure and the distance between the CMUT and stumbling block, which also successfully demonstrates the functionality of the developed TIA of the analog-front-end receiver. (paper)

  19. Capacitive mixing power production from salinity gradient energy enhanced through exoelectrogen-generated ionic currents

    KAUST Repository

    Hatzell, Marta C.; Cusick, Roland D.; Logan, Bruce E.

    2014-01-01

    Several approaches to generate electrical power directly from salinity gradient energy using capacitive electrodes have recently been developed, but power densities have remained low. By immersing the capacitive electrodes in ionic fields generated by exoelectrogenic microorganisms in bioelectrochemical reactors, we found that energy capture using synthetic river and seawater could be increased ∼65 times, and power generation ∼46 times. Favorable electrochemical reactions due to microbial oxidation of organic matter, coupled to oxygen reduction at the cathode, created an ionic flow field that enabled more effective passive charging of the capacitive electrodes and higher energy capture. This ionic-based approach is not limited to the use of river water-seawater solutions. It can also be applied in industrial settings, as demonstrated using thermolytic solutions that can be used to capture waste heat energy as salinity gradient energy. Forced charging of the capacitive electrodes, using energy generated by the bioelectrochemical system and a thermolytic solution, further increased the maximum power density to 7 W m -2 (capacitive electrode). © 2014 The Royal Society of Chemistry.

  20. Two models of the capacitated vehicle routing problem

    Directory of Open Access Journals (Sweden)

    Zuzana Borčinova

    2017-01-01

    Full Text Available The aim of the Capacitated Vehicle Routing Problem (CVRP is to find a set of minimum total cost routes for a fleet of capacitated vehicles based at a single depot, to serve a set of customers. There exist various integer linear programming models of the CVRP. One of the main differences lies in the way to eliminate sub-tours, i.e. cycles that do not go through the depot. In this paper, we describe a well-known flow formulation of CVRP, where sub-tour elimination constraints have a cardinality exponentially growing with the number of customers. Then we present a mixed linear programming formulation with polynomial cardinality of sub-tour elimination constraints. Both of the models were implemented and compared on several benchmarks.

  1. Spin-orbit controlled capacitance of a polar heterostructure

    Energy Technology Data Exchange (ETDEWEB)

    Steffen, Kevin; Kopp, Thilo [Center for Electronic Correlations and Magnetism, EP VI, Institute of Physics, University of Augsburg, 86135 Augsburg (Germany); Loder, Florian [Center for Electronic Correlations and Magnetism, EP VI and TP III, Institute of Physics, University of Augsburg, 86135 Augsburg (Germany)

    2015-07-01

    Oxide heterostructures with polar films display special electronic properties, such as the electronic reconstruction at their internal interfaces with the formation of two-dimensional metallic states. Moreover, the electrical field from the polar layers is inversion-symmetry breaking and may generate a strong Rashba spin-orbit coupling (RSOC) in the interfacial electronic system. We investigate the capacitance of a heterostructure in which a strong RSOC at a metallic interface is controlled by the electric field of a surface electrode. Such a structure is for example given by a LaAlO{sub 3} film on a SrTiO{sub 3} substrate which is gated by a top electrode. We find that due to a strong RSOC the capacitance can be larger than the classical geometric value.

  2. Programmable Low-Power Low-Noise Capacitance to Voltage Converter for MEMS Accelerometers.

    Science.gov (United States)

    Royo, Guillermo; Sánchez-Azqueta, Carlos; Gimeno, Cecilia; Aldea, Concepción; Celma, Santiago

    2016-12-30

    In this work, we present a capacitance-to-voltage converter (CVC) for capacitive accelerometers based on microelectromechanical systems (MEMS). Based on a fully-differential transimpedance amplifier (TIA), it features a 34-dB transimpedance gain control and over one decade programmable bandwidth, from 75 kHz to 1.2 MHz. The TIA is aimed for low-cost low-power capacitive sensor applications. It has been designed in a standard 0.18-μm CMOS technology and its power consumption is only 54 μW. At the maximum transimpedance configuration, the TIA shows an equivalent input noise of 42 fA/ Hz at 50 kHz, which corresponds to 100 μg/ Hz .

  3. Programmable Low-Power Low-Noise Capacitance to Voltage Converter for MEMS Accelerometers

    Directory of Open Access Journals (Sweden)

    Guillermo Royo

    2016-12-01

    Full Text Available In this work, we present a capacitance-to-voltage converter (CVC for capacitive accelerometers based on microelectromechanical systems (MEMS. Based on a fully-differential transimpedance amplifier (TIA, it features a 34-dB transimpedance gain control and over one decade programmable bandwidth, from 75 kHz to 1.2 MHz. The TIA is aimed for low-cost low-power capacitive sensor applications. It has been designed in a standard 0.18-μm CMOS technology and its power consumption is only 54 μW. At the maximum transimpedance configuration, the TIA shows an equivalent input noise of 42 fA/ Hz at 50 kHz, which corresponds to 100 μg/ Hz .

  4. Capacitive system detects and locates fluid leaks

    Science.gov (United States)

    1966-01-01

    Electronic monitoring system automatically detects and locates minute leaks in seams of large fluid storage tanks and pipelines covered with thermal insulation. The system uses a capacitive tape-sensing element that is adhesively bonded over seams where fluid leaks are likely to occur.

  5. Maximizing the value of gate capacitance in field-effect devices using an organic interface layer

    Science.gov (United States)

    Kwok, H. L.

    2015-12-01

    Past research has confirmed the existence of negative capacitance in organics such as tris (8-Hydroxyquinoline) Aluminum (Alq3). This work explored using such an organic interface layer to enhance the channel voltage in the field-effect transistor (FET) thereby lowering the sub-threshold swing. In particular, if the values of the positive and negative gate capacitances are approximately equal, the composite negative capacitance will increase by orders of magnitude. One concern is the upper frequency limit (∼100 Hz) over which negative capacitance has been observed. Nonetheless, this frequency limit can be raised to kHz when the organic layer is subjected to a DC bias.

  6. Deep traps at GaAs/GaAs interface grown by MBE-interruption growth technique

    International Nuclear Information System (INIS)

    Kaniewska, M.; Engstroem, O.

    2007-01-01

    Electron trapping centers at the GaAs/GaAs interface grown by molecular beam epitaxy (MBE)-interruption growth technique have been studied by capacitance versus voltage (C-V) measurements and deep level transient spectroscopy (DLTS). Two main electron traps have been revealed with activation energies at 0.16 eV and 0.52 eV from the conduction band. Inhomogeneous spatial distributions of the traps, obtained by DLTS profiling, indicate that they are agglomerated at the interrupted interface on a concentration level of (2-3) x 10 15 cm -3 at their maximum. Their behaviour is typical of acceptor-like traps when investigating by C-V profiling as a function of temperature. Based on a comparison made with electron traps in MBE-GaAs as well as with the traps in InAs/GaAs quantum dot/quantum well (QD/QW) structures, we conclude they are the well-known EL10 and EL4 defects, respectively, and their concentrations are growth condition dependent. They may be point defect-impurity complexes. Their presence may cause interpretation and application problems of the low-dimensional InAs/GaAs structures

  7. Deep traps at GaAs/GaAs interface grown by MBE-interruption growth technique

    Energy Technology Data Exchange (ETDEWEB)

    Kaniewska, M. [Department of Analysis of Semicoductor Nanostructures, Institute of Electron Technology, Al. Lotnikow 32/46, 02-668 Warsaw (Poland)], E-mail: kaniew@ite.waw.pl; Engstroem, O. [Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-412 96 Goeteborg (Sweden)

    2007-09-15

    Electron trapping centers at the GaAs/GaAs interface grown by molecular beam epitaxy (MBE)-interruption growth technique have been studied by capacitance versus voltage (C-V) measurements and deep level transient spectroscopy (DLTS). Two main electron traps have been revealed with activation energies at 0.16 eV and 0.52 eV from the conduction band. Inhomogeneous spatial distributions of the traps, obtained by DLTS profiling, indicate that they are agglomerated at the interrupted interface on a concentration level of (2-3) x 10{sup 15} cm{sup -3} at their maximum. Their behaviour is typical of acceptor-like traps when investigating by C-V profiling as a function of temperature. Based on a comparison made with electron traps in MBE-GaAs as well as with the traps in InAs/GaAs quantum dot/quantum well (QD/QW) structures, we conclude they are the well-known EL10 and EL4 defects, respectively, and their concentrations are growth condition dependent. They may be point defect-impurity complexes. Their presence may cause interpretation and application problems of the low-dimensional InAs/GaAs structures.

  8. MEMS capacitive force sensors for cellular and flight biomechanics

    International Nuclear Information System (INIS)

    Sun Yu; Nelson, Bradley J

    2007-01-01

    Microelectromechanical systems (MEMS) are playing increasingly important roles in facilitating biological studies. They are capable of providing not only qualitative but also quantitative information on the cellular, sub-cellular and organism levels, which is instrumental to understanding the fundamental elements of biological systems. MEMS force sensors with their high bandwidth and high sensitivity combined with their small size, in particular, have found a role in this domain, because of the importance of quantifying forces and their effect on the function and morphology of many biological structures. This paper describes our research in the development of MEMS capacitive force sensors that have already demonstrated their effectiveness in the areas of cell mechanics and Drosophila flight dynamics studies. (review article)

  9. Compressed magnetic flux amplifier with capacitive load

    International Nuclear Information System (INIS)

    Stuetzer, O.M.

    1980-03-01

    A first-order analysis is presented for a compressed magnetic flux (CMF) current amplifier working into a load with a capacitive component. Since the purpose of the investigation was to gain a general understanding of the arrangement, a number of approximations and limitations were accepted. The inductance of the transducer varies with time; the inductance/resistance/capacitance (LRC) circuit therefore is parametric and solutions are different for the stable regime (high C), the oscillation regime (low C), and the transition case. Solutions and performance depend strongly on circuit boundary conditions, i.e., energization of the circuit by either an injected current or by an applied capacitor charge. The behavior of current and energy amplification for the various cases are discussed in detail. A number of experiments with small CMF devices showed that the first-order theory presented predicts transducer performance well in the linear regime

  10. Investigation of capacitance voltage characteristics of strained Si/SiGe n-channel MODFET varactor

    Science.gov (United States)

    Elogail, Y.; Kasper, E.; Gunzer, F.; Shaker, A.; Schulze, J.

    2016-06-01

    This work is concerned with the investigation of Capacitance-Voltage (CV) behavior of n-channel Si/SiGe MODFET varactors. This investigation provides a valuable insight into the high frequency response of the device under test and its dependence on design parameters; especially regarding the modulation layer doping concentration. The heterostructure under consideration is much more complicated than conventional MOS varactor with respect to non-uniform doping, energy band offsets and the pn-junction in series. Subsequently, CV characterization has never been applied to such MODFET varactor structure. Experimental CV measurements have shown a non-monotonic behavior with a transition point minimum and higher saturation levels on both sides, in contradiction to the conventional high frequency MOS characteristics. This behavior was confirmed qualitatively using simulations. Moreover, we explain some fundamental capacitance properties of the structure, which provide already very interesting perceptions of the MODFET varactor operation, modeling and possible applications using the obtained stimulating results.

  11. A current driven capacitively coupled chlorine discharge

    International Nuclear Information System (INIS)

    Huang, Shuo; Gudmundsson, J T

    2014-01-01

    The effect of driving current, driving frequency and secondary electrons on capacitively coupled chlorine discharge is systematically investigated using a hybrid approach consisting of a particle-in-cell/Monte Carlo simulation and a volume-averaged global model. The driving current is varied from 20 to 80 A m −2 , the driving frequency is varied from 13.56 to 60 MHz and the secondary electron emission coefficient is varied from 0.0 to 0.4. Key plasma parameters including electron energy probability function, electron heating rate, ion energy and angular distributions are explored and their variations with control parameters are analyzed and compared with other discharges. Furthermore, we extend our study to dual-frequency (DF) capacitively coupled chlorine discharge by adding a low-frequency current source and explore the effect of the low-frequency source on the discharge. The low-frequency current density is increased from 0 to 4 A m −2 . The flux of Cl 2 + ions to the surface increases only slightly while the average energy of Cl 2 + ions to the surface increases almost linearly with increasing low-frequency current, which shows possible independent control of the flux and energy of Cl 2 + ions by varying the low-frequency current in a DF capacitively coupled chlorine discharge. However, the increase in the flux of Cl + ions with increasing low-frequency current, which is mainly due to the increased dissociation fraction of the background gas caused by extra power supplied by the low-frequency source, is undesirable. (paper)

  12. Capacitance spectroscopy on n-type GaNAs/GaAs embedded quantum structure solar cells

    Science.gov (United States)

    Venter, Danielle; Bollmann, Joachim; Elborg, Martin; Botha, J. R.; Venter, André

    2018-04-01

    In this study, both deep level transient spectroscopy (DLTS) and admittance spectroscopy (AS) have been used to study the properties of electrically active deep level centers present in GaNAs/GaAs quantum wells (QWs) embedded in p-i-n solar cells. The structures were grown by molecular beam epitaxy (MBE). In particular, the electrical properties of samples with Si (n-type) doping of the QWs were investigated. DLTS revealed four deep level centers in the material, whereas only three were detected by AS. NextNano++ simulation software was used to model the sample band-diagrams to provide reasoning for the origin of the signals produced by both techniques.

  13. A Capacitance-To-Digital Converter for MEMS Sensors for Smart Applications.

    Science.gov (United States)

    Pérez Sanjurjo, Javier; Prefasi, Enrique; Buffa, Cesare; Gaggl, Richard

    2017-06-07

    The use of MEMS sensors has been increasing in recent years. To cover all the applications, many different readout circuits are needed. To reduce the cost and time to market, a generic capacitance-to-digital converter (CDC) seems to be the logical next step. This work presents a configurable CDC designed for capacitive MEMS sensors. The sensor is built with a bridge of MEMS, where some of them function with pressure. Then, the capacitive to digital conversion is realized using two steps. First, a switched-capacitor (SC) preamplifier is used to make the capacitive to voltage (C-V) conversion. Second, a self-oscillated noise-shaping integrating dual-slope (DS) converter is used to digitize this magnitude. The proposed converter uses time instead of amplitude resolution to generate a multibit digital output stream. In addition it performs noise shaping of the quantization error to reduce measurement time. This article shows the effectiveness of this method by measurements performed on a prototype, designed and fabricated using standard 0.13 µm CMOS technology. Experimental measurements show that the CDC achieves a resolution of 17 bits, with an effective area of 0.317 mm², which means a pressure resolution of 1 Pa, while consuming 146 µA from a 1.5 V power supply.

  14. Varying carbon structures templated from KIT-6 for optimum electrochemical capacitance

    Energy Technology Data Exchange (ETDEWEB)

    Li Fujun; Laak, Nicole van der; Ting, S.-W. [Department of Chemistry, University of Hong Kong, Pokfulam Road, Hong Kong (Hong Kong); Chan, K.-Y., E-mail: hrsccky@hku.h [Department of Chemistry, University of Hong Kong, Pokfulam Road, Hong Kong (Hong Kong)

    2010-03-01

    Bicontinuous ordered mesoporous carbons (OMCs), fabricated from a KIT-6 template using aluminosilicate as catalyst and furfuryl alcohol as carbon source, were successfully prepared and studied as electrodes in supercapacitors. Their structures were characterized by transmission electron microscopy (TEM), small-angle X-ray diffraction (SAXD) and N{sub 2} cryosorption methods. Using cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS), the capacitive performance of the OMCs was found to be strongly dependent on the mesostructure. Specific capacitance value greater than 130 F g{sup -1} at 20 mV s{sup -1} were obtained from an OMC that featured high surface area with the existence of additional large pores to enhance the specific capacitance at high discharge rate. For the OMC with the best performance, we found that a power density as high as 4.5 kW kg{sup -1} at an energy density of 6.1 Wh kg{sup -1} can be delivered when the discharge current density is 20 A g{sup -1} and can also be continuously charged and discharged with little variation in capacitance after 2500 cycles. These results indicate that this OMC with optimized structure has potential to be used as a power component in electric vehicles.

  15. Label-free detection of sex determining region Y (SRY) via capacitive biosensor

    KAUST Repository

    Sivashankar, Shilpa

    2016-10-20

    In this work, we present for the first time, the use of a simple fractal capacitive biosensor for the quantification and detection of sex-determining region Y (SRY) genes. This section of genetic code, which is found on the Y chromosome, finds importance for study as it causes fetuses to develop characteristics of male sex-like gonads when a mutation occurs. It is also an important genetic code in men, and disorders involving the SRY gene can cause infertility and sexual malfunction that lead to a variety of gene mutational disorders. We have therefore designed silicon-based, label-free fractal capacitive biosensors to quantify various proteins and genes. We take advantage of a good dielectric material, Parylene C for enhancing the performance of the sensors. We have integrated these sensors with a simple microchannel for easy handling of fluids on the detection area. The read-out value of an Agilent LCR meter used to measure capacitance of the sensor at a frequency of 1 MHz determined gene specificity and gene quantification. These data revealed that the capacitance measurement of the capacitive biosensor for the SRY gene depended on both the target and the concentration of DNA. The experimental outcomes in the present study can be used to detect DNA and its variations in crucial fields that have a great impact on our daily lives, such as clinical and veterinary diagnostics, industrial and environmental testing and forensic sciences.

  16. Analysis of small deflection touch mode behavior in capacitive pressure sensors

    DEFF Research Database (Denmark)

    Fragiacomo, Giulio; Ansbæk, Thor; Pedersen, Thomas

    2010-01-01

    Due to an increasing need for devices with low power consumption, capacitive pressure sensors have become good substitutes for the well known piezoresistive pressure sensors. Mathematical models are necessary to design and characterize the device, preferably the model is analytical...... such that geometrical scalings are revealed. We show that, in the case of linear elastic behavior, a simple analytical model can be found for a touch mode capacitive pressure sensor (TMCPS). With this model it is possible to readily evaluate the main features of a TMCPS such as: sensitivity (both in normal and touch...... mode), touch point pressure and parasitic capacitance. Therefore, the desired device can be designed without using finite element modeling (FEM). This reduces the effort needed to design a micromachined TMCPS. Finally, the model has been compared with a micromachined TMCPS showing an excellent...

  17. Influence of quantizing magnetic field and Rashba effect on indium arsenide metal-oxide-semiconductor structure accumulation capacitance

    Science.gov (United States)

    Kovchavtsev, A. P.; Aksenov, M. S.; Tsarenko, A. V.; Nastovjak, A. E.; Pogosov, A. G.; Pokhabov, D. A.; Tereshchenko, O. E.; Valisheva, N. A.

    2018-05-01

    The accumulation capacitance oscillations behavior in the n-InAs metal-oxide-semiconductor structures with different densities of the built-in charge (Dbc) and the interface traps (Dit) at temperature 4.2 K in the magnetic field (B) 2-10 T, directed perpendicular to the semiconductor-dielectric interface, is studied. A decrease in the oscillation frequency and an increase in the capacitance oscillation amplitude are observed with the increase in B. At the same time, for a certain surface accumulation band bending, the influence of the Rashba effect, which is expressed in the oscillations decay and breakdown, is traced. The experimental capacitance-voltage curves are in a good agreement with the numeric simulation results of the self-consistent solution of Schrödinger and Poisson equations in the magnetic field, taking into account the quantization, nonparabolicity of dispersion law, and Fermi-Dirac electron statistics, with the allowance for the Rashba effect. The Landau quantum level broadening in a two-dimensional electron gas (Lorentzian-shaped density of states), due to the electron scattering mechanism, linearly depends on the magnetic field. The correlation between the interface electronic properties and the characteristic scattering times was established.

  18. High resolution capacitance detection circuit for rotor micro-gyroscope

    Directory of Open Access Journals (Sweden)

    Ming-Yuan Ren

    2014-03-01

    Full Text Available Conventional methods for rotor position detection of micro-gyroscopes include common exciting electrodes (single frequency and common sensing electrodes (frequency multiplex, but they have encountered some problems. So we present a high resolution and low noise pick-off circuit for micro-gyroscopes which utilizes the time multiplex method. The detecting circuit adopts a continuous-time current sensing circuit for capacitance measurement, and its noise analysis of the charge amplifier is introduced. The equivalent output noise power spectral density of phase-sensitive demodulation is 120 nV/Hz1/2. Tests revealed that the whole circuitry has a relative capacitance resolution of 1 × 10−8.

  19. Comparison of the nonradiative deep levels in silicon solar cells made of monocrystalline, polycrystalline and amorphous silicon using deep level transient spectroscopy (DLTS)

    International Nuclear Information System (INIS)

    Hammadeh, H.; Darwich, R.

    2005-03-01

    The aim of this work is to study the defects in solar cells fabricated from crystalline, polycrystalline and amorphous silicon. Using Deep Level Transient Spectroscopy technique, (DLTS), we have determined their activation energies, concentrations and their effect on the solar cell efficiency. Our results show a DLTS peak in crystalline silicon which we could attribute to tow peaks originating from iron contamination. In the polycrystalline based solar cells we observed a series of non conventional DLTS peaks while in amorphous silicon we observed a peak using low measurement frequencies (between 8 kHz and 20 kHz). We studied these defects and determined their activation energies as well as the capture cross section for one of them. We suggest a possible configuration of these defects. We cannot able to study the effect of these defects on the solar cell efficiency because we have not the experimental set-up which measure the solar cell efficiency. (Authors)

  20. A capacitive CMOS-MEMS sensor designed by multi-physics simulation for integrated CMOS-MEMS technology

    Science.gov (United States)

    Konishi, Toshifumi; Yamane, Daisuke; Matsushima, Takaaki; Masu, Kazuya; Machida, Katsuyuki; Toshiyoshi, Hiroshi

    2014-01-01

    This paper reports the design and evaluation results of a capacitive CMOS-MEMS sensor that consists of the proposed sensor circuit and a capacitive MEMS device implemented on the circuit. To design a capacitive CMOS-MEMS sensor, a multi-physics simulation of the electromechanical behavior of both the MEMS structure and the sensing LSI was carried out simultaneously. In order to verify the validity of the design, we applied the capacitive CMOS-MEMS sensor to a MEMS accelerometer implemented by the post-CMOS process onto a 0.35-µm CMOS circuit. The experimental results of the CMOS-MEMS accelerometer exhibited good agreement with the simulation results within the input acceleration range between 0.5 and 6 G (1 G = 9.8 m/s2), corresponding to the output voltages between 908.6 and 915.4 mV, respectively. Therefore, we have confirmed that our capacitive CMOS-MEMS sensor and the multi-physics simulation will be beneficial method to realize integrated CMOS-MEMS technology.

  1. Anomalous effects on radiation detectors and capacitance measurements inside a modified Faraday cage

    Science.gov (United States)

    Milián-Sánchez, V.; Mocholí-Salcedo, A.; Milián, C.; Kolombet, V. A.; Verdú, G.

    2016-08-01

    We present experimental results showing certain anomalies in the measurements performed inside a modified Faraday cage of decay rates of Ra-226, Tl-204 and Sr-90/I-90, of the gamma spectrum of a Cs-137 preparation, and of the capacitance of both a class-I multilayer ceramic capacitor and of the interconnection cable between the radiation detector and the scaler. Decay rates fluctuate significantly up to 5% around the initial value and differently depending on the type of nuclide, and the spectrum photopeak increases in 4.4%. In the case of the capacitor, direct capacitance measurements at 100 Hz, 10 kHz and 100 kHz show variations up to 0.7%, the most significant taking place at 100 Hz. In the case of the interconnection cable, the capacitance varies up to 1%. Dispersion also tends to increase inside the enclosure. However, the measured capacitance variations do not explain the variations observed in decay rates.

  2. Morphological reason for enhancement of electrochemical double layer capacitances of various acetylene blacks by electrochemical polarization

    International Nuclear Information System (INIS)

    Kim, Taegon; Ham, Chulho; Rhee, Choong Kyun; Yoon, Seong-Ho; Tsuji, Masaharu; Mochida, Isao

    2008-01-01

    Enhancement of electrochemical capacitance and morphological variations of various acetylene blacks caused by electrochemical polarization are presented. Acetylene blacks of different mean particle diameters were modified by air-oxidation and heat treatment to diversify the morphologies of the acetylene blacks before electrochemical polarization. The various acetylene blacks were electrochemically oxidized at 1.6 V (vs. Ag/AgCl) for 10 s and the polarization step was repeated until the capacitance values did not change any longer. These polarization steps enhanced the capacitances of the acetylene blacks and the specific enhancement factors range from 2 to 5.5. Such an enhancement is strongly related to morphological modification as revealed by transmission electron microscopic observations. The electrochemical polarization resulted in formation of tiny graphene sheets on the wide graphitic carbon surfaces, which were most responsible for the observed capacitive enhancement. Although the pseudo-capacitance increased after polarization by forming oxygenated species on the surfaces, its contribution to the total capacitance was less than 10%. The mechanism of the formation of the tiny graphene sheets during the electrochemical oxidation is described schematically

  3. Closed-loop feedback control for microfluidic systems through automated capacitive fluid height sensing.

    Science.gov (United States)

    Soenksen, L R; Kassis, T; Noh, M; Griffith, L G; Trumper, D L

    2018-03-13

    Precise fluid height sensing in open-channel microfluidics has long been a desirable feature for a wide range of applications. However, performing accurate measurements of the fluid level in small-scale reservoirs (sensor contact needs to be avoided. In particular, gravity-driven systems used in several microfluidic applications to establish pressure gradients and impose flow remain open-loop and largely unmonitored due to these sensing limitations. Here we present an optimized self-shielded coplanar capacitive sensor design and automated control system to provide submillimeter fluid-height resolution (∼250 μm) and control of small-scale open reservoirs without the need for direct fluid contact. Results from testing and validation of our optimized sensor and system also suggest that accurate fluid height information can be used to robustly characterize, calibrate and dynamically control a range of microfluidic systems with complex pumping mechanisms, even in cell culture conditions. Capacitive sensing technology provides a scalable and cost-effective way to enable continuous monitoring and closed-loop feedback control of fluid volumes in small-scale gravity-dominated wells in a variety of microfluidic applications.

  4. Deep level centers in electron-irradiated silicon crystals doped with copper at different temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Yarykin, Nikolai [Institute of Microelectronics Technology, RAS, Chernogolovka (Russian Federation); Weber, Joerg [Technische Universitaet Dresden (Germany)

    2017-07-15

    The effect of bombardment with energetic particles on the deep-level spectrum of copper-contaminated silicon wafers is studied by space charge spectroscopy methods. The p-type FZ-Si wafers were doped with copper in the temperature range of 645-750 C and then irradiated with the 10{sup 15} cm{sup -2} fluence of 5 MeV electrons at room temperature. Only the mobile Cu{sub i} species and the Cu{sub PL} centers are detected in significant concentrations in the non-irradiated Cu-doped wafers. The properties of the irradiated samples are found to qualitatively depend on the copper in-diffusion temperature T{sub diff}. For T{sub diff} > 700 C, the irradiation partially reduces the Cu{sub i} concentration and introduces additional Cu{sub PL} centers while no standard radiation defects are detected. If T{sub diff} was below ∝700 C, the irradiation totally removes the mobile Cu{sub i} species. Instead, the standard radiation defects and their complexes with copper appear in the deep-level spectrum. A model for the defects reaction scheme during the irradiation is derived and discussed. DLTS spectrum of the Cu-contaminated and then irradiated silicon qualitatively depends on the copper in-diffusion temperature. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  5. Automatic recognition of severity level for diagnosis of diabetic retinopathy using deep visual features.

    Science.gov (United States)

    Abbas, Qaisar; Fondon, Irene; Sarmiento, Auxiliadora; Jiménez, Soledad; Alemany, Pedro

    2017-11-01

    Diabetic retinopathy (DR) is leading cause of blindness among diabetic patients. Recognition of severity level is required by ophthalmologists to early detect and diagnose the DR. However, it is a challenging task for both medical experts and computer-aided diagnosis systems due to requiring extensive domain expert knowledge. In this article, a novel automatic recognition system for the five severity level of diabetic retinopathy (SLDR) is developed without performing any pre- and post-processing steps on retinal fundus images through learning of deep visual features (DVFs). These DVF features are extracted from each image by using color dense in scale-invariant and gradient location-orientation histogram techniques. To learn these DVF features, a semi-supervised multilayer deep-learning algorithm is utilized along with a new compressed layer and fine-tuning steps. This SLDR system was evaluated and compared with state-of-the-art techniques using the measures of sensitivity (SE), specificity (SP) and area under the receiving operating curves (AUC). On 750 fundus images (150 per category), the SE of 92.18%, SP of 94.50% and AUC of 0.924 values were obtained on average. These results demonstrate that the SLDR system is appropriate for early detection of DR and provide an effective treatment for prediction type of diabetes.

  6. Radiation-induced bistable centers with deep levels in silicon n{sup +}–p structures

    Energy Technology Data Exchange (ETDEWEB)

    Lastovskii, S. B., E-mail: lastov@ifttp.bas-net.by [Scientific and Practical Materials Research Center of the National Academy of Sciences of Belarus (Belarus); Markevich, V. P. [Manchester University, Photon Science Institute (United Kingdom); Yakushevich, H. S.; Murin, L. I. [Scientific and Practical Materials Research Center of the National Academy of Sciences of Belarus (Belarus); Krylov, V. P. [Vladimir State University (Russian Federation)

    2016-06-15

    The method of deep level transient spectroscopy is used to study electrically active defects in p-type silicon crystals irradiated with MeV electrons and α particles. A new radiation-induced defect with the properties of bistable centers is determined and studied. After keeping the irradiated samples at room temperature for a long time or after their short-time annealing at T ∼ 370 K, this defect does not display any electrical activity in p-type silicon. However, as a result of the subsequent injection of minority charge carriers, this center transforms into the metastable configuration with deep levels located at E{sub V} + 0.45 and E{sub V} + 0.54 eV. The reverse transition to the main configuration occurs in the temperature range of 50–100°C and is characterized by the activation energy ∼1.25 eV and a frequency factor of ∼5 × 10{sup 15} s{sup –1}. The determined defect is thermally stable at temperatures as high as T ∼ 450 K. It is assumed that this defect can either be a complex of an intrinsic interstitial silicon atom with an interstitial carbon atom or a complex consisting of an intrinsic interstitial silicon atom with an interstitial boron atom.

  7. Analysis of a Segmented Annular Coplanar Capacitive Tilt Sensor with Increased Sensitivity.

    Science.gov (United States)

    Guo, Jiahao; Hu, Pengcheng; Tan, Jiubin

    2016-01-21

    An investigation of a segmented annular coplanar capacitor is presented. We focus on its theoretical model, and a mathematical expression of the capacitance value is derived by solving a Laplace equation with Hankel transform. The finite element method is employed to verify the analytical result. Different control parameters are discussed, and each contribution to the capacitance value of the capacitor is obtained. On this basis, we analyze and optimize the structure parameters of a segmented coplanar capacitive tilt sensor, and three models with different positions of the electrode gap are fabricated and tested. The experimental result shows that the model (whose electrode-gap position is 10 mm from the electrode center) realizes a high sensitivity: 0.129 pF/° with a non-linearity of design.

  8. A Superresolution Image Reconstruction Algorithm Based on Landweber in Electrical Capacitance Tomography

    Directory of Open Access Journals (Sweden)

    Chen Deyun

    2013-01-01

    Full Text Available According to the image reconstruction accuracy influenced by the “soft field” nature and ill-conditioned problems in electrical capacitance tomography, a superresolution image reconstruction algorithm based on Landweber is proposed in the paper, which is based on the working principle of the electrical capacitance tomography system. The method uses the algorithm which is derived by regularization of solutions derived and derives closed solution by fast Fourier transform of the convolution kernel. So, it ensures the certainty of the solution and improves the stability and quality of image reconstruction results. Simulation results show that the imaging precision and real-time imaging of the algorithm are better than Landweber algorithm, and this algorithm proposes a new method for the electrical capacitance tomography image reconstruction algorithm.

  9. Layout Capacitive Coupling and Structure Impacts on Integrated High Voltage Power MOSFETs

    DEFF Research Database (Denmark)

    Fan, Lin; Knott, Arnold; Jørgensen, Ivan Harald Holger

    2016-01-01

    The switching performances of the integrated high voltage power MOSFETs that have prevailing interconnection matrices are being heavily influenced by the parasitic capacitive coupling of on-chip metal wires. The mechanism of the side-byside coupling is generally known, however, the layer-to-layer......The switching performances of the integrated high voltage power MOSFETs that have prevailing interconnection matrices are being heavily influenced by the parasitic capacitive coupling of on-chip metal wires. The mechanism of the side-byside coupling is generally known, however, the layer...... extraction tool shows that the side-by-side coupling dominated structure can perform better than the layer-to-layer coupling dominated structure, in terms of on-resistance times input or output capacitance, by 9.2% and 4.9%, respectively....

  10. Whole-tree water transport scales with sapwood capacitance in tropical forest canopy trees.

    Science.gov (United States)

    F.C. Meinzer; S.A. James; G. Goldstein; D. Woodruff

    2003-01-01

    The present study examines the manner in which several whole-tree water transport properties scale with species specific variation in sapwood water storage capacity. The hypothesis that constraints on relationships between sapwood capacitance and other water relations characteristics lead to predictable scaling relationships between intrinsic capacitance and whole-tree...

  11. Mesoporous nanocrystalline film architecture for capacitive storage devices

    Science.gov (United States)

    Dunn, Bruce S.; Tolbert, Sarah H.; Wang, John; Brezesinski, Torsten; Gruner, George

    2017-05-16

    A mesoporous, nanocrystalline, metal oxide construct particularly suited for capacitive energy storage that has an architecture with short diffusion path lengths and large surface areas and a method for production are provided. Energy density is substantially increased without compromising the capacitive charge storage kinetics and electrode demonstrates long term cycling stability. Charge storage devices with electrodes using the construct can use three different charge storage mechanisms immersed in an electrolyte: (1) cations can be stored in a thin double layer at the electrode/electrolyte interface (non-faradaic mechanism); (2) cations can interact with the bulk of an electroactive material which then undergoes a redox reaction or phase change, as in conventional batteries (faradaic mechanism); or (3) cations can electrochemically adsorb onto the surface of a material through charge transfer processes (faradaic mechanism).

  12. Origin of Negative Capacitance in Bipolar Organic Diodes

    Science.gov (United States)

    Niu, Quan; Crǎciun, N. Irina; Wetzelaer, Gert-Jan A. H.; Blom, Paul W. M.

    2018-03-01

    Negative differential capacitance (NC) occurring at low frequencies in organic light-emitting diodes (OLEDs) is a poorly understood phenomenon. We study the origin of the NC effect by systematically varying the number of electron traps in OLEDs based on the polymeric semiconductor poly(p -phenylene vinylene). Increasing the electron trap density enhances the NC effect. The magnitude and observed decrease of the relaxation time is consistent with the (inverse) rate of trap-assisted recombination. The absence of NC in a nearly trap-free light-emitting diode unambiguously shows that trap-assisted recombination is the responsible mechanism for the negative contribution to the capacitance in bipolar organic diodes. Our results reveal that the NC effect can be exploited to quantitatively determine the number of traps in organic semiconductors in a nondestructive fashion.

  13. Soil capacitance sensors and stem dendrometers. Useful tools for irrigation scheduling of commercial orchards?

    Energy Technology Data Exchange (ETDEWEB)

    Bonet, L.; Ferrer, P.; Castel, J. R.; Intrigliolo, D. S.

    2010-07-01

    Irrigation scheduling is often performed based on a soil water balance, where orchard evapotranspiration is estimated using the reference evapotranspiration (ETo) times the crop coefficient (Kc). This procedure, despite being widely spread, has some uncertainties. Because of this, plant and soil water status monitoring could be alternatively or complementarity used to schedule irrigation. The usefulness of capacitance probes was evaluated during several seasons in large irrigation districts where irrigation practices were changed over years from the ETo * Kc model to the analysis of soil water status trend. This area corresponds to drip irrigated orchards planted with citrus, peach, nectarine and persimmon. Around 25% less irrigation was applied with no substantial yield penalty when the information provided by capacitance probes was correctly applied for irrigation management. On the other hand, the usefulness of stem dendrometers for continuously monitoring plant water status was evaluated in a young plum experimental orchard. Over two years, irrigation was scheduled using exclusively trunk shrinkage via the signal intensity approach by means of a baseline equation previously obtained in the orchard. Results showed that it was not always possible to schedule irrigation based on the trunk shrinkage signal intensity due to the temporal changes in the reference values that occurred as trees aged. Overall, results obtained are discussed in terms of the possible extrapolation at field level of both capacitance probes and stem dendrometers. Advantages and drawbacks of each technique are analyzed and discussed. (Author) 34 refs.

  14. Energy-Efficient Capacitance-to-Digital Converters for Low-Energy Sensor Nodes

    KAUST Repository

    Omran, Hesham

    2015-11-01

    Energy efficiency is a key requirement for wireless sensor nodes, biomedical implants, and wearable devices. The energy consumption of the sensor node needs to be minimized to avoid battery replacement, or even better, to enable the device to survive on energy harvested from the ambient. Capacitive sensors do not consume static power; thus, they are attractive from an energy efficiency perspective. In addition, they can be employed in a wide range of sensing applications. However, the sensor readout circuit–i.e., the capacitance-to-digital converter (CDC)–can be the dominant source of energy consumption in the system. Thus, the development of energy-efficient CDCs is crucial to minimizing the energy consumption of capacitive sensor nodes. In the first part of this dissertation, we propose several energy-efficient CDC architectures for low-energy sensor nodes. First, we propose a digitally-controlled coarsefine multislope CDC that employs both current and frequency scaling to achieve significant improvement in energy efficiency. Second, we analyze the limitations of successive approximation (SAR) CDC, and we address these limitations by proposing a robust parasitic-insensitive opamp-based SAR CDC. Third, we propose an inverter-based SAR CDC that achieves an energy efficiency figure-of-merit (FoM) of 31fJ/Step, which is the best energy efficiency FoM reported to date. Fourth, we propose a differential SAR CDC with quasi-dynamic operation to maintain excellent energy efficiency for a scalable sample rate. In the second part of this dissertation, we study the matching properties of small integrated capacitors, which are an integral component of energy-efficient CDCs. Despite conventional wisdom, we experimentally illustrate that the mismatch of small capacitors can be directly measured, and we report mismatch measurements for subfemtofarad integrated capacitors. We also correct the common misconception that lateral capacitors match better than vertical capacitors

  15. A Capacitance-Based Methodology for the Estimation of Piezoelectric Coefficients of Poled Piezoelectric Materials

    KAUST Repository

    Al Ahmad, Mahmoud; Alshareef, Husam N.

    2010-01-01

    A methodology is proposed to estimate the piezoelectric coefficients of bulk piezoelectric materials using simple capacitance measurements. The extracted values of d33 and d31 from the capacitance measurements were 506 pC/N and 247 p

  16. Capacitive discharge exciplex lamps

    Energy Technology Data Exchange (ETDEWEB)

    Sosnin, E A; Erofeev, M V; Tarasenko, V F [High Current Electronics Institute, 2/3, Akademichesky Ave., Tomsk 634055 (Russian Federation)

    2005-09-07

    Simple-geometry exciplex lamps of a novel type excited by a capacitive discharge (CD-excilamps) have been investigated. An efficient radiation has been obtained on KrBr*, KrCl*, XeBr*, XeCl* molecules and I* atom. The highest values of efficiency of various working molecules are approximately 10-18%. The lifetime of the operating gas mixture in KrCl*, XeCl*, I* and XeBr* exciplex lamps excited by a CD is above 1000 h. Owing to the above-mentioned characteristics, the exciplex lamps excited by a CD are supposed to be very promising for various applications.

  17. Capacitive discharge exciplex lamps

    International Nuclear Information System (INIS)

    Sosnin, E A; Erofeev, M V; Tarasenko, V F

    2005-01-01

    Simple-geometry exciplex lamps of a novel type excited by a capacitive discharge (CD-excilamps) have been investigated. An efficient radiation has been obtained on KrBr*, KrCl*, XeBr*, XeCl* molecules and I* atom. The highest values of efficiency of various working molecules are approximately 10-18%. The lifetime of the operating gas mixture in KrCl*, XeCl*, I* and XeBr* exciplex lamps excited by a CD is above 1000 h. Owing to the above-mentioned characteristics, the exciplex lamps excited by a CD are supposed to be very promising for various applications

  18. Preparatory research for development of a capacitance sensor monitoring the liquid fraction in an inclined pipe

    International Nuclear Information System (INIS)

    Ko, Min Seok; Lee, Bo An; Kim, Sin; Yun, Byong Jo

    2012-01-01

    Two phase flow is a highly general phenomenon in various engineering fields including thermal hydraulic systems of the nuclear power plant. In particular, the liquid fraction in two phase system is one of the most important parameters to be considered for efficient system design and analysis. There have been various methods for the liquid fraction measurement. Wojtan et al. employed an optical fiber for liquid fraction measurement. Elbow and Rezkallah adopted the capacitance signal, Tsochatzidis et al. and Fossa used the conductance response in order to monitor the liquid fraction in various two phase flow regimes. The electrical methods are based on the fact that the liquid and gas have different conductivity and permittivity values, and these electrical properties directly correspond to phase distributions. In the capacitance method, in particular, one or more pairs of electrodes attached inside or outside the pipe wall measure the capacitance between electrode pairs and this measured capacitance signal is directly converted to the liquid fraction. In this work, as a preparatory research for development of a capacitance sensor monitoring the liquid fraction in an inclined pipe whose diameter and inclination angle are 45mm and 3rad, respectively, a capacitance is designed. Also, data evaluation procedures of a wire mesh sensor which would be employed for the verification of capacitance sensor performance are verified by comparing static experiments

  19. Focal adhesion kinase is required for actin polymerization and remodeling of the cytoskeleton during sperm capacitation

    Science.gov (United States)

    Roa-Espitia, Ana L.; Hernández-Rendón, Eva R.; Baltiérrez-Hoyos, Rafael; Muñoz-Gotera, Rafaela J.; Cote-Vélez, Antonieta; Jiménez, Irma; González-Márquez, Humberto

    2016-01-01

    ABSTRACT Several focal adhesion proteins are known to cooperate with integrins to link the extracellular matrix to the actin cytoskeleton; as a result, many intracellular signaling pathways are activated and several focal adhesion complexes are formed. However, how these proteins function in mammalian spermatozoa remains unknown. We confirm the presence of focal adhesion proteins in guinea pig spermatozoa, and we explore their role during capacitation and the acrosome reaction, and their relationship with the actin cytoskeleton. Our results suggest the presence of a focal adhesion complex formed by β1-integrin, focal adhesion kinase (FAK), paxillin, vinculin, talin, and α-actinin in the acrosomal region. Inhibition of FAK during capacitation affected the protein tyrosine phosphorylation associated with capacitation that occurs within the first few minutes of capacitation, which caused the acrosome reaction to become increasingly Ca2+ dependent and inhibited the polymerization of actin. The integration of vinculin and talin into the complex, and the activation of FAK and paxillin during capacitation, suggests that the complex assembles at this time. We identify that vinculin and α-actinin increase their interaction with F-actin while it remodels during capacitation, and that during capacitation focal adhesion complexes are structured. FAK contributes to acrosome integrity, likely by regulating the polymerization and the remodeling of the actin cytoskeleton. PMID:27402964

  20. Fabrication of a capacitive relative humidity sensor using aluminum thin films deposited on etched printed circuit board

    Directory of Open Access Journals (Sweden)

    Lee Jacqueline Ann L.

    2016-01-01

    Full Text Available A capacitive humidity-sensing device was created by thermal evaporation of 99.999% aluminum. The substrate used for the coating was etched double-sided printed circuit board. The etched printed circuit board serves as the dielectric of the capacitor while the aluminum thin films deposited on either side serve as the plates of the capacitor. The capacitance was measured before and after exposure to humidity. The device was then calibrated by comparing the readings of capacitance with that of the relative humidity sensor of the Vernier LabQuest2. It was found that there is a linear relationship between the capacitance and relative humidity given by the equation C=1.418RH+29.139 where C is the capacitance and RH is the relative humidity. The surface of the aluminum films is porous and it is through these pores that water is adsorbed and capillary condensation occurs, thereby causing the capacitance to change upon exposure to humidity.

  1. Asymmetric flows over symmetric surfaces: capacitive coupling in induced-charge electro-osmosis

    Energy Technology Data Exchange (ETDEWEB)

    Mansuripur, T S [Department of Physics, University of California, Santa Barbara, CA 93106 (United States); Pascall, A J; Squires, T M [Department of Chemical Engineering, University of California, Santa Barbara, CA 93106 (United States)], E-mail: squires@engineering.ucsb.edu

    2009-07-15

    We report curious asymmetric induced-charge electro-osmotic (ICEO) flows over a symmetric, planar gate electrode under applied ac electric fields, whereas symmetric, counter-rotating rolls are expected. Furthermore, the asymmetric component of the flow is consistently directed towards the grounded electrode. We propose that capacitive coupling of the gate electrode to the microscope stage-a comparatively large equipotential surface that acts effectively as a ground-is responsible for this symmetry breaking. This stray capacitance drives the formation of a double layer whose zeta potential is proportional to the potential drop from the electrolyte directly above the gate electrode to the external stage. Therefore, the charge in this 'stray' double layer varies in phase with the driving field, resulting in a rectified, steady flow as with standard ICEO. We experimentally vary the stray capacitance, the electric potential of the stage and the location of the gate electrode, and find that the effect on the stray flow is qualitatively consistent with the predictions of the proposed mechanism. In the process, we demonstrate that capacitive coupling offers an additional means of manipulating fluid flow over a polarizable surface.

  2. Asymmetric flows over symmetric surfaces: capacitive coupling in induced-charge electro-osmosis

    International Nuclear Information System (INIS)

    Mansuripur, T S; Pascall, A J; Squires, T M

    2009-01-01

    We report curious asymmetric induced-charge electro-osmotic (ICEO) flows over a symmetric, planar gate electrode under applied ac electric fields, whereas symmetric, counter-rotating rolls are expected. Furthermore, the asymmetric component of the flow is consistently directed towards the grounded electrode. We propose that capacitive coupling of the gate electrode to the microscope stage-a comparatively large equipotential surface that acts effectively as a ground-is responsible for this symmetry breaking. This stray capacitance drives the formation of a double layer whose zeta potential is proportional to the potential drop from the electrolyte directly above the gate electrode to the external stage. Therefore, the charge in this 'stray' double layer varies in phase with the driving field, resulting in a rectified, steady flow as with standard ICEO. We experimentally vary the stray capacitance, the electric potential of the stage and the location of the gate electrode, and find that the effect on the stray flow is qualitatively consistent with the predictions of the proposed mechanism. In the process, we demonstrate that capacitive coupling offers an additional means of manipulating fluid flow over a polarizable surface.

  3. Enhanced specific capacitance of modified needle cokes by controlling oxidation treatment

    International Nuclear Information System (INIS)

    Yang, Sunhye; Kim, Ick-Jun; Choi, In-Sik; Soo Kim, Hyun; Tack Kim, Yu

    2010-01-01

    The electric double-layer performance of needle cokes can be affected by the morphology of structures. Hence, we introduce modified needle cokes by using simple oxidation treatment. The degree of graphitization with high specific capacitance is controlled by acid and heat treatment. The active sites of cokes are increased with increasing oxidation time. Dilute nitric acid (HNO 3 ) and sodium chlorate (NaClO 3 ) are used for the activation of cokes. In this case, the interlayer distance is dramatically increased from 3.5 to 8.9 A. The specific capacitances are 33 F g -1 and 30 F ml -1 , respectively, on a two-electrode system with a potential range of 0-2.5 V. The behaviors of double-layer capacitance are demonstrated by the charge-discharge process and the morphologies of modified needle cokes are analyzed by XRD, FE-SEM, BET and elemental analysis.

  4. Scanning capacitance microscopy investigations of InGaAs/InP quantum wells

    International Nuclear Information System (INIS)

    Douheret, O.; Maknys, K.; Anand, S.

    2004-01-01

    In this work, cross-sectional scanning capacitance microscopy (SCM) is used to investigate InGaAs/InP (latticed matched) quantum wells grown by metal-organic vapor phase epitaxy. Using n-doped InP as barriers with different doping levels, different InGaAs wells structures (5, 10 and 20 nm) were investigated. The capability of SCM to detect electrons in the quantum wells is demonstrated, showing in addition, a systematic and consistent trend for the different well widths and barrier doping levels. The SCM results are qualitatively consistent with electron distribution obtained for 1D Poisson/Schroedinger simulation. Finally, resolution issues in SCM are discussed in terms of tip averaging effects

  5. CMOS based capacitance to digital converter circuit for MEMS sensor

    Science.gov (United States)

    Rotake, D. R.; Darji, A. D.

    2018-02-01

    Most of the MEMS cantilever based system required costly instruments for characterization, processing and also has large experimental setups which led to non-portable device. So there is a need of low cost, highly sensitive, high speed and portable digital system. The proposed Capacitance to Digital Converter (CDC) interfacing circuit converts capacitance to digital domain which can be easily processed. Recent demand microcantilever deflection is part per trillion ranges which change the capacitance in 1-10 femto farad (fF) range. The entire CDC circuit is designed using CMOS 250nm technology. Design of CDC circuit consists of a D-latch and two oscillators, namely Sensor controlled oscillator (SCO) and digitally controlled oscillator (DCO). The D-latch is designed using transmission gate based MUX for power optimization. A CDC design of 7-stage, 9-stage and 11-stage tested for 1-18 fF and simulated using mentor graphics Eldo tool with parasitic. Since the proposed design does not use resistance component, the total power dissipation is reduced to 2.3621 mW for CDC designed using 9-stage SCO and DCO.

  6. The effects of illumination on deep levels observed in as-grown and low-energy electron irradiated high-purity semi-insulating 4H-SiC

    Science.gov (United States)

    Alfieri, G.; Knoll, L.; Kranz, L.; Sundaramoorthy, V.

    2018-05-01

    High-purity semi-insulating 4H-SiC can find a variety of applications, ranging from power electronics to quantum computing applications. However, data on the electronic properties of deep levels in this material are scarce. For this reason, we present a deep level transient spectroscopy study on HPSI 4H-SiC substrates, both as-grown and irradiated with low-energy electrons (to displace only C-atoms). Our investigation reveals the presence of four deep levels with activation energies in the 0.4-0.9 eV range. The concentrations of three of these levels increase by at least one order of magnitude after irradiation. Furthermore, we analyzed the behavior of these traps under sub- and above-band gap illumination. The nature of the traps is discussed in the light of the present data and results reported in the literature.

  7. Local Void Fractions and Bubble Velocity in Vertical Air-Water Two-Phase Flows Measured by Needle-Contact Capacitance Probe

    Directory of Open Access Journals (Sweden)

    Shanfang Huang

    2018-01-01

    Full Text Available Multiphase flow measurements have become increasingly important in a wide range of industrial fields. In the present study, a dual needle-contact capacitance probe was newly designed to measure local void fractions and bubble velocity in a vertical channel, which was verified by digital high-speed camera system. The theoretical analyses and experiments show that the needle-contact capacitance probe can reliably measure void fractions with the readings almost independent of temperature and salinity for the experimental conditions. In addition, the trigger-level method was chosen as the signal processing method for the void fraction measurement, with a minimum relative error of −4.59%. The bubble velocity was accurately measured within a relative error of 10%. Meanwhile, dynamic response of the dual needle-contact capacitance probe was analyzed in detail. The probe was then used to obtain raw signals for vertical pipe flow regimes, including plug flow, slug flow, churn flow, and bubbly flow. Further experiments indicate that the time series of the output signals vary as the different flow regimes and are consistent with each flow structure.

  8. Recalling the origins of DLTS

    International Nuclear Information System (INIS)

    Lang, David V.

    2007-01-01

    This paper recalls the events leading up to the author's 1973 discovery of Deep Level Transient Spectroscopy (DLTS). It discusses the status of junction capacitance techniques in the late 1960s and points out why the typical capacitance instrumentation of that era would not have lead the author to the DLTS discovery. This discovery is discussed in the context of the novel NMR-inspired instrumentation used by the author to study fast capacitance transients of the ZnO center in GaP LEDs. Finally, the author makes some general comments about the innovation process

  9. Capacitive VAr requirements for wind driven self-excited induction generators

    International Nuclear Information System (INIS)

    Singaravelu, S.; Velusami, S.

    2007-01-01

    This paper presents the capacitive VAr requirements of a three phase pole changing self-excited induction generator and a single phase self-excited induction generator, used as isolated power sources by a constant speed or a variable speed prime mover, to obtain the desired voltage regulation at various values of load and speed. Different performance criteria such as constant terminal voltage or constant air gap flux have been considered. The developed mathematical model using nodal analysis based on graph theory is quite general in nature and can be used for any combination of the unknown variables such as magnetizing reactance (X M ) and frequency (F) or capacitive reactance (X C ) and frequency (F) or capacitive reactance (X C ) and speed (υ). The proposed model completely avoids the tedious and erroneous manual work of segregating the real and imaginary components of the complex impedance of the machine for deriving the specific model for each operating modes. Moreover, any element, like the core loss component, can be included or excluded from the model if required. Next, to obtain the capacitive VAr requirements of a three phase pole changing self-excited induction generator and a single phase self-excited induction generator, a fuzzy logic approach is used for the first time to find the unknown variables using the above model. The results are presented in a normalized form so that they are valid for a wide range of machines and would be useful for the design of voltage regulators for such generators

  10. [Sequelae of unilateral deep venous thrombosis in plethysmography of the calf].

    Science.gov (United States)

    Zicot, M; Depairon, M

    1982-01-01

    Twenty four patients suffering from unilateral venous disturbances revealed by Doppler and secondary to a deep venous thrombosis were examined. The calf venous haemodynamics was analyzed by use of a strain-jauge plethysmograph. We determined the increase in venous volume due to the inflation of a thigh pneumatic cuff (pressure at 20, 40 and 60 mm Hg; delta V20, delta V40, delta V60). The maximal venous output (Vout) was measured after a quick release of the 60 mm Hg pressure. The maximal venous drainage (VMM) was assessed during a rhythmic exercise (tiptoeing) while standing; delta V20, delta V40 and delta V60 were nearly constantly reduced on the abnormal side (t of Student respectively 3.49; 6.09 and 5.07). Vout dropped proportionaly to delta V60. Some abnormalities due to valvular insufficiency were frequently present in the beginning of the inflation curve at the level of the abnormal limbs. VMM was nearly always largely decreased on the affected side (t = 5.43). The unilateral flow disturbances displayed by the Doppler were regularly going with abnormalities of the capacitive system, well demonstrated by comparison with the non-affected limbs.

  11. Investigation of capacitance characteristics in metal/high-k ...

    Indian Academy of Sciences (India)

    MS received 4 May 2016; accepted 10 January 2017; published online 21 August 2017. Abstract. Capacitance vs. ... with high-k materials is the prime technological challenge. [2]. ... reliability of MOS devices are strongly dependent on the for-.

  12. Deep Learning and Developmental Learning: Emergence of Fine-to-Coarse Conceptual Categories at Layers of Deep Belief Network.

    Science.gov (United States)

    Sadeghi, Zahra

    2016-09-01

    In this paper, I investigate conceptual categories derived from developmental processing in a deep neural network. The similarity matrices of deep representation at each layer of neural network are computed and compared with their raw representation. While the clusters generated by raw representation stand at the basic level of abstraction, conceptual categories obtained from deep representation shows a bottom-up transition procedure. Results demonstrate a developmental course of learning from specific to general level of abstraction through learned layers of representations in a deep belief network. © The Author(s) 2016.

  13. Direct observation and measurements of neutron induced deep levels responsible for N{sub eff} changes in high resistivity silicon detectors using TCT

    Energy Technology Data Exchange (ETDEWEB)

    Li, Z.; Li, C.J. [Brookhaven National Lab., Upton, NY (United States); Eremin, V.; Verbitskaya, E. [AN SSSR, Leningrad (Russian Federation). Fiziko-Tekhnicheskij Inst.

    1996-03-01

    Neutron induced deep levels responsible for changes of space charge concentration {ital N{sub eff}} in high resistivity silicon detectors have been observed directly using the transient current technique (TCT). It has been observed by TCT that the absolute value and sign of {ital N{sub eff}} experience changes due to the trapping of non- equilibrium free carriers generated near the surface (about 5 micrometers depth into the silicon) by short wavelength laser pulses in fully depleted detectors. Electron trapping causes {ital N{sub eff}} to change toward negative direction (or more acceptor-like space charges) and hole trapping causes {ital N{sub eff}} to change toward positive direction (or more donor-like space charges). The specific temperature associated with these {ital N{sub eff}} changes are those of the frozen-up temperatures for carrier emission of the corresponding deep levels. The carrier capture cross sections of various deep levels have been measured directly using different free carrier injection schemes. 10 refs., 12 figs., 3 tabs.

  14. Amorphous carbon nanofibres inducing high specific capacitance of deposited hydrous ruthenium oxide

    International Nuclear Information System (INIS)

    Barranco, V.; Pico, F.; Ibanez, J.; Lillo-Rodenas, M.A.; Linares-Solano, A.; Kimura, M.; Oya, A.; Rojas, R.M.; Amarilla, J.M.; Rojo, J.M.

    2009-01-01

    Composites consisting of ruthenium oxide particles deposited on amorphous carbon nanofibres are prepared by a repetitive impregnation procedure. The choice of amorphous carbon nanofibres as support of amorphous ruthenium oxide leads to composites in which the deposited oxide consists of aggregates of extremely small primary particles (1-1.5 nm-size) and showing high porosity (specific surface area of 450 m 2 g -1 ). This special deposition of the oxide seems to favour: (i) high oxide capacitance (1000 Fg -1 ) at high oxide loadings (up to 20 wt%) and (ii) high capacitance retention (ca. 80% from the initial oxide capacitance) at high current densities (200 mA cm -2 ). Amorphous carbon nanofibres are suitable supports for amorphous ruthenium oxide and perhaps for other amorphous oxides acting as active electrode materials.

  15. Fabrication of a thin-film capacitive force sensor array for tactile feedback in robotic surgery.

    Science.gov (United States)

    Paydar, Omeed H; Wottawa, Christopher R; Fan, Richard E; Dutson, Erik P; Grundfest, Warren S; Culjat, Martin O; Candler, Rob N

    2012-01-01

    Although surgical robotic systems provide several advantages over conventional minimally invasive techniques, they are limited by a lack of tactile feedback. Recent research efforts have successfully integrated tactile feedback components onto surgical robotic systems, and have shown significant improvement to surgical control during in vitro experiments. The primary barrier to the adoption of tactile feedback in clinical use is the unavailability of suitable force sensing technologies. This paper describes the design and fabrication of a thin-film capacitive force sensor array that is intended for integration with tactile feedback systems. This capacitive force sensing technology could provide precise, high-sensitivity, real-time responses to both static and dynamic loads. Capacitive force sensors were designed to operate with optimal sensitivity and dynamic range in the range of forces typical in minimally invasive surgery (0-40 N). Initial results validate the fabrication of these capacitive force-sensing arrays. We report 16.3 pF and 146 pF for 1-mm(2) and 9-mm(2) capacitive areas, respectively, whose values are within 3% of theoretical predictions.

  16. A Generic Topology Derivation Method for Single-phase Converters with Active Capacitive DC-links

    DEFF Research Database (Denmark)

    Wang, Haoran; Wang, Huai; Zhu, Guorong

    2016-01-01

    capacitive DCDC- link solutions, but important aspects of the topology assess-ment, such as the total energy storage, overall capacitive energy buffer ratio, cost, and reliability are still not available. This paper proposes a generic topology derivation method of single-phase power converters...

  17. Parallel double-plate capacitive proximity sensor modelling based on effective theory

    International Nuclear Information System (INIS)

    Li, Nan; Zhu, Haiye; Wang, Wenyu; Gong, Yu

    2014-01-01

    A semi-analytical model for a double-plate capacitive proximity sensor is presented according to the effective theory. Three physical models are established to derive the final equation of the sensor. Measured data are used to determine the coefficients. The final equation is verified by using measured data. The average relative error of the calculated and the measured sensor capacitance is less than 7.5%. The equation can be used to provide guidance to engineering design of the proximity sensors

  18. [Impact of sperm capacitation on various populations of human spermatozoa].

    Science.gov (United States)

    Villanueva Díaz, C; Suárez Juárez, M; Díaz, M A; Ayala Ruiz, A

    1989-02-01

    With the purpose of evaluating the impact of spermatic capacitation on different spermatozooa populations, 49 samples of semen, before and after in vitro spermatic capacitation with Ham F-10 medium, were studied; motility of cells was evaluated according to WHO criteria. There was diminution of percentage of immobile cells, 27.8 to 20.0, as well as increase in population of cells with more mobility, 28.6% to 39.1%. Both difference were statistically significant (p = less than 0.05 and p = less than 0.005, respectively). These data suggest that spermatic capacitacion activates "in cascade" all groups of gametes.

  19. Reduction of parasitic capacitance in 10 kV SiC MOSFET power modules using 3D FEM

    DEFF Research Database (Denmark)

    Jørgensen, Asger Bjørn; Christensen, Nicklas; Dalal, Dipen Narendrabhai

    2017-01-01

    The benefits of emerging wide-band gap semiconductors can only be utilized if the semiconductor is properly packaged. Capacitive coupling in the package causes electromagnetic interference during high dv/dt switching. This paper investigates the current flowing in the parasitic capacitance between...... the output node and the grounded heat sink for a custom silicon carbide power module. A circuit model of the capacitive coupling path is presented, using parasitic capacitances extracted from ANSYS Q3D. Simulated values are compared with experimental results. A new iteration of the silicon carbide power...

  20. Ultrahigh volumetric capacitance and cyclic stability of fluorine and nitrogen co-doped carbon microspheres

    Science.gov (United States)

    Zhou, Junshuang; Lian, Jie; Hou, Li; Zhang, Junchuan; Gou, Huiyang; Xia, Meirong; Zhao, Yufeng; Strobel, Timothy A.; Tao, Lu; Gao, Faming

    2015-09-01

    Highly porous nanostructures with large surface areas are typically employed for electrical double-layer capacitors to improve gravimetric energy storage capacity; however, high surface area carbon-based electrodes result in poor volumetric capacitance because of the low packing density of porous materials. Here, we demonstrate ultrahigh volumetric capacitance of 521 F cm-3 in aqueous electrolytes for non-porous carbon microsphere electrodes co-doped with fluorine and nitrogen synthesized by low-temperature solvothermal route, rivaling expensive RuO2 or MnO2 pseudo-capacitors. The new electrodes also exhibit excellent cyclic stability without capacitance loss after 10,000 cycles in both acidic and basic electrolytes at a high charge current of 5 A g-1. This work provides a new approach for designing high-performance electrodes with exceptional volumetric capacitance with high mass loadings and charge rates for long-lived electrochemical energy storage systems.