WorldWideScience

Sample records for californium arsenides

  1. Metabolism and toxicity of californium

    International Nuclear Information System (INIS)

    Metabolism of californium can be compared with that of other transplutonium elements. The most important points are as follows: a fast blood clearance and fast bone uptake more important than liver uptake, a relatively high urinary excretion and kidney retention. Blood clearance of californium can be compared with that of americium. Distribution of californium 252 nitrate after intramuscular injection in rats was studied. There are very few experimental data on acute or long term toxicity of californium. (28 references)

  2. Magnetism in californium

    International Nuclear Information System (INIS)

    A SQUID-based magnetic susceptometer has been constructed for studying small radioactive samples at temperatures below 350 K and in magnetic fields up to 50 kilogauss. The device has been used to study californium (element 98) in a number of solid-state forms: the dhcp metal, several oxides (Cf2O3 in both the bcc and monoclinic structures, Cf7O12, CfO2 and BaCfO3), several monopnictides (CfN, CfAs and CfSb) and the trichloride (in both the hexagonal and orthorhombic structures). All of these materials were studied in polycrystalline form, and hexagonal CfCl3 was studied in single-crystal form as well. The susceptometer has the sensitivity to measure samples containing less than 10 micrograms of californium. The magnetic susceptibilities of all of the californium materials at temperatures above about 100 K are described well by the Curie-Weiss relationship. This behavior is consistent with the assumption that the magnetic 5f electrons are localized and that the paramagnetic behavior can be interpreted in terms of the properties of the free ion. The measured values of the effective paramagnetic moment, μ/sub eff/, for all the californium materials that were studied are reasonably consistent with theoretical values based on intermediate coupling models. All of the californium materials showed some indications of cooperative magnetic effects. The dhcp metal was observed to order ferromagnetically at 52 K, and all of the californium compounds studied showed signs of antiferromagnetic ordering, mostly at temperatures below 25 K. 91 refs., 50 figs., 19 tabs

  3. Californium Multiplier (CFX)

    International Nuclear Information System (INIS)

    The availability of 252Cf as an economical high-intensity neutron source has made it possible to construct compact neutron irradiation devices with widespread applications. The simplest such device consists of a single 252Cf source within a moderating and shielding medium. Higher neutron flux levels can be attained either through the use of more 252Cf or through source multiplication by means of a subcritical uranium assembly. Although the use of larger 252Cf sources to achieve higher neutron flux is technically straightforward, an economic penalty is paid as the source strength is increased. Larger californium sources imply larger initial investments to cover the cost of source material and larger operating costs resulting from the decay of the 252Cf source. A Californium Multiplier, the CFX, which produces a flux enhancement of 30 when compared to a conventional moderated 252Cf system has been designed, licensed, built, and tested by IRT Corporation. Such systems are now available on a commercial basis for both neutron radiography and neutron activation analysis. The first commercial CFX system was installed at the Research Laboratories of Eastman Kodak Company in Rochester, NY, in March 1975. This device, using 1 mg of 252Cf, is very stable and the neutron flux generated by the CFX is very reproducible. The performance characteristics of this system are summarized

  4. Gallium Arsenide

    Science.gov (United States)

    Brozel, Mike

    The history of gallium arsenide is complicated because the technology required to produce GaAs devices has been fraught with problems associated with the material itself and with difficulties in its fabrication. Thus, for many years, GaAs was labelled as "the semiconductor of the future, and it will always be that way." Recently, however, advances in compact-disc (CD) technology, fibre-optic communications and mobile telephony have boosted investment in GaAs research and development. Consequently, there have been advances in materials and fabrication technology and, as a result, GaAs devices now enjoy stable niche markets.

  5. Californium--palladium metal neutron source material

    Science.gov (United States)

    Dahlen, B.L.; Mosly, W.C. Jr.; Smith, P.K.; Albenesius, E.L.

    1974-01-22

    Californium, as metal or oxide, is uniformly dispersed throughout a noble metal matrix, provided in compact, rod or wire form. A solution of californium values is added to palladium metal powder, dried, blended and pressed into a compact having a uni-form distribution of californium. The californium values are decomposed to californium oxide or metal by heating in an inert or reducing atmosphere. Sintering the compact to a high density closes the matrix around the dispersed californium. The sintered compact is then mechanically shaped into an elongated rod or wire form. (4 claims, no drawings) (Official Gazette)

  6. Californium-252 Neutron Sources for Medical Applications

    International Nuclear Information System (INIS)

    Californium-252 neutron sources are being prepared to investigate the value of this radionuclide in diagnosing and treating diseases. A source resembling a cell-loaded radium needle was developed for neutron therapy. Since therapy needles are normally implanted in the body, very conservative design criteria were established to prevent leakage of radioactive. Methods are being developed to prepare very intense californium sources that could be used eventually for neutron radiography and for diagnosis by neutron activation analysis. This paper discusses these methods

  7. Californium Electrodepositions at Oak Ridge National Laboratory

    Energy Technology Data Exchange (ETDEWEB)

    Boll, Rose Ann [ORNL

    2015-01-01

    Electrodepositions of californium isotopes were successfully performed at Oak Ridge National Laboratory (ORNL) during the past year involving two different types of deposition solutions, ammonium acetate (NH4C2H3O2) and isobutanol ((CH3)2CHCH2OH). A californium product that was decay enriched in 251Cf was recovered for use in super-heavy element (SHE) research. This neutron-rich isotope, 251Cf, provides target material for SHE research for the potential discovery of heavier isotopes of Z=118. The californium material was recovered from aged 252Cf neutron sources in storage at ORNL. These sources have decayed for over 30 years, thus providing material with a very high 251Cf-to-252Cf ratio. After the source capsules were opened, the californium was purified and then electrodeposited using the isobutanol method onto thin titanium foils for use in an accelerator at the Joint Institute for Nuclear Research in Dubna, Russia. Another deposition method, ammonium acetate, was used to produce a deposition containing 1.7 0.1 Ci of 252Cf onto a stainless steel substrate. This was the largest single electrodeposition of 252Cf ever prepared. The 252Cf material was initially purified using traditional ion exchange media, such as AG50-AHIB and AG50-HCl, and further purified using a TEVA-NH4SCN system to remove any lanthanides, resulting in the recovery of 3.6 0.1 mg of purified 252Cf. The ammonium acetate deposition was run with a current of 1.0 amp, resulting in a 91.5% deposition yield. Purification and handling of the highly radioactive californium material created additional challenges in the production of these sources.

  8. Historical review of californium-252 discovery and development

    International Nuclear Information System (INIS)

    This paper discusses the discovery and history of californium 252. This isotope may be synthesized by irradiating plutonium 239, plutonium 242, americium 243, or curium 244 with neutrons in a nuclear reactor. Various experiments and inventions involving 252Cf conducted at the Savannah River Plant are discussed. The evolution of radiotherapy using californium 252 is reviewed

  9. Californium-252: a remarkable versatile radioisotope

    Energy Technology Data Exchange (ETDEWEB)

    Osborne-Lee, I.W.; Alexander, C.W.

    1995-10-10

    A product of the nuclear age, Californium-252 ({sup 252}Cf) has found many applications in medicine, scientific research, industry, and nuclear science education. Californium-252 is unique as a neutron source in that it provides a highly concentrated flux and extremely reliable neutron spectrum from a very small assembly. During the past 40 years, {sup 252}Cf has been applied with great success to cancer therapy, neutron radiography of objects ranging from flowers to entire aircraft, startup sources for nuclear reactors, fission activation for quality analysis of all commercial nuclear fuel, and many other beneficial uses, some of which are now ready for further growth. Californium-252 is produced in the High Flux Isotope Reactor (HFIR) and processed in the Radiochemical Engineering Development Center (REDC), both of which are located at the Oak Ridge National Laboratory (ORNL) in Oak Ridge, Tennessee. The REDC/HFIR facility is virtually the sole supplier of {sup 252}Cf in the western world and is the major supplier worldwide. Extensive exploitation of this product was made possible through the {sup 252}Cf Market Evaluation Program, sponsored by the United States Department of Energy (DOE) [then the Atomic Energy Commission (AEC) and later the Energy Research and Development Administration (ERDA)]. This program included training series, demonstration centers, seminars, and a liberal loan policy for fabricated sources. The Market Evaluation Program was instituted, in part, to determine if large-quantity production capability was required at the Savannah River Laboratory (SRL). Because of the nature of the product and the means by which it is produced, {sup 252}Cf can be produced only in government-owned facilities. It is evident at this time that the Oak Ridge research facility can meet present and projected near-term requirements. The production, shipment, and sales history of {sup 252}Cf from ORNL is summarized herein.

  10. Californium-252: a remarkable versatile radioisotope

    International Nuclear Information System (INIS)

    A product of the nuclear age, Californium-252 (252Cf) has found many applications in medicine, scientific research, industry, and nuclear science education. Californium-252 is unique as a neutron source in that it provides a highly concentrated flux and extremely reliable neutron spectrum from a very small assembly. During the past 40 years, 252Cf has been applied with great success to cancer therapy, neutron radiography of objects ranging from flowers to entire aircraft, startup sources for nuclear reactors, fission activation for quality analysis of all commercial nuclear fuel, and many other beneficial uses, some of which are now ready for further growth. Californium-252 is produced in the High Flux Isotope Reactor (HFIR) and processed in the Radiochemical Engineering Development Center (REDC), both of which are located at the Oak Ridge National Laboratory (ORNL) in Oak Ridge, Tennessee. The REDC/HFIR facility is virtually the sole supplier of 252Cf in the western world and is the major supplier worldwide. Extensive exploitation of this product was made possible through the 252Cf Market Evaluation Program, sponsored by the United States Department of Energy (DOE) [then the Atomic Energy Commission (AEC) and later the Energy Research and Development Administration (ERDA)]. This program included training series, demonstration centers, seminars, and a liberal loan policy for fabricated sources. The Market Evaluation Program was instituted, in part, to determine if large-quantity production capability was required at the Savannah River Laboratory (SRL). Because of the nature of the product and the means by which it is produced, 252Cf can be produced only in government-owned facilities. It is evident at this time that the Oak Ridge research facility can meet present and projected near-term requirements. The production, shipment, and sales history of 252Cf from ORNL is summarized herein

  11. Californium-252 Neutron Therapy in China

    International Nuclear Information System (INIS)

    Californium-252 brachytherapy, believed to be the most successful source for neutron therapy, gives most of the cures as well as long-term and complication-free survivals. Chinese radiation oncologists were interested in californium neutron therapy (Cf-NT) in the early 1980s, but 252Cf sources for medical use were not available in China until 1992 when a californium joint venture was established by the China Institute of Atomic Energy (Beijing) and the Research Institute for Nuclear Reactors (Dimitrovgrad) of Russia. In 1995, 25 seeds of 252Cf with a strength of 3 μg each were sent to China for preclinical investigation. Three years later, a high dose rate (HDR) 252Cf source was imported and transferred into a home-made remote after-loader for intracavitary treatment in Chongqing, and a clinical trail was started in February 1999. This is the first time that Cf-NT was performed for cancer patients in China. Since then, Cf-NT in China has developed rapidly. It is estimated that one-tenth of those radiation oncology centers with brachytherapy practice will be equipped with californium units in 5 yr. That means more than 30 units will be in use in hospitals. That is significant compared with other countries, but it is just one, on average, for each province or one per 40 million people in China. Progress also has been achieved in the 252Cf treatment delivery equipment. Preliminary clinical trails showed complete response observed in all cases treated, with a rapid clearance of tumors and mild reactions in normal tissues. The short-term results are quite encouraging. To deal with problems due to the demand for Cf-NT in China, attention should be paid to the following particulars: (1) A high-strength miniature source is needed for HDR/MDR interstitial therapy to extend the Cf-NT coverage. (2) Basic work on radiophysics and radiobiology needs to be done, including source calibration, clinical dosimetry, clinical RBE determination, and Cf-NT quality assurance

  12. Californium-252 sales and loans at Oak Ridge National Laboratory

    International Nuclear Information System (INIS)

    The production and distribution in the United States of 252Cf has recently been consolidated at the Oak Ridge National Laboratory (ORNL). The 252Cf Industrial Sales/Loan Program and the 252Cf University Load Program, which were formerly located at the Savannah River Plant (SRP), have been combined with the californium production and distribution activities of the Transuranium Element Production Program at ORNL. Californium-252 is sold to commercial users in the form of bulk californium oxide, palladium-californium alloy pellets, or alloy wires. Neutron source capsules, which are fabricated for loans to DOE or other US government agencies, are still available in all forms previously available. The consolidation of all 252Cf distribution activities at the production site is expected to result in better service to users. In particular, customers for neutrons sources will be ale to select from a wider range of neutron source forms, including custom designs, through a single contact point

  13. Indentation fracture of gallium arsenide

    OpenAIRE

    Pouvreau, Cédric; GIOVANOLA, Jacques; Breguet, Jean-Marc

    2008-01-01

    The scribe and break technique (or dicing) is a widely employed method in the industry of semiconductors to separate infrared laser diodes made from gallium arsenide (GaAs). The scribing step allows to create a precursor crack which is then propagated during the breaking step, along preferential {110} cleavage planes of GaAs. The main drawback of the scribing process is that it generates a lot of undesirable cracks and particles that degrade the performances of devices. In this dissertation, ...

  14. Californium-252 encapsulation at the Savannah River Laboratory

    International Nuclear Information System (INIS)

    More than 1 g of the neutron-emitting isotope californium-252 has been encapsulated at SRL for worldwide medical, industrial, and research uses. Bulk sales packages have been prepared for the USDOE sales program since 1971. Doubly-encapsulated sources have been prepared for USDOE's market evaluation program since 1968. Californium-252 sources for loan and sales packages satisfy the criteria for Special Form Radioactive Material. Encapsulation is performed in special neutron-shielded containment facilities at SRL. Development of improved source and shipping package designs and processes is continuing. 17 figures

  15. Production, distribution and applications of californium-252 neutron sources

    International Nuclear Information System (INIS)

    The radioisotope 252Cf is routinely encapsulated into compact, portable, intense neutron sources with a 2.6-yr half-life. A source the size of a person's little finger can emit up to 1011 neutrons s-1. Californium-252 is used commercially as a reliable, cost-effective neutron source for prompt gamma neutron activation analysis (PGNAA) of coal, cement and minerals, as well as for detection and identification of explosives, land mines and unexploded military ordnance. Other uses are neutron radiography, nuclear waste assays, reactor start-up sources, calibration standards and cancer therapy. The inherent safety of source encapsulations is demonstrated by 30 yr of experience and by US Bureau of Mines tests of source survivability during explosions. The production and distribution center for the US Department of Energy (DOE) Californium Program is the Radiochemical Engineering Development Center (REDC) at Oak Ridge National Laboratory (ORNL). DOE sells 252Cf to commercial reencapsulators domestically and internationally. Sealed 252Cf sources are also available for loan to agencies and subcontractors of the US government and to universities for educational, research and medical applications. The REDC has established the Californium User Facility (CUF) for Neutron Science to make its large inventory of 252Cf sources available to researchers for irradiations inside uncontaminated hot cells. Experiments at the CUF include a land mine detection system, neutron damage testing of solid-state detectors, irradiation of human cancer cells for boron neutron capture therapy experiments and irradiation of rice to induce genetic mutations

  16. Production, distribution and applications of californium-252 neutron sources.

    Science.gov (United States)

    Martin, R C; Knauer, J B; Balo, P A

    2000-01-01

    The radioisotope 252Cf is routinely encapsulated into compact, portable, intense neutron sources with a 2.6-yr half-life. A source the size of a person's little finger can emit up to 10(11) neutrons s(-1). Californium-252 is used commercially as a reliable, cost-effective neutron source for prompt gamma neutron activation analysis (PGNAA) of coal, cement and minerals, as well as for detection and identification of explosives, land mines and unexploded military ordinance. Other uses are neutron radiography, nuclear waste assays, reactor start-up sources, calibration standards and cancer therapy. The inherent safety of source encapsulations is demonstrated by 30 yr of experience and by US Bureau of Mines tests of source survivability during explosions. The production and distribution center for the US Department of Energy (DOE) Californium Program is the Radiochemical Engineering Development Center (REDC) at Oak Ridge National Laboratory (ORNL). DOE sells 252Cf to commercial reencapsulators domestically and internationally. Sealed 252Cf sources are also available for loan to agencies and subcontractors of the US government and to universities for educational, research and medical applications. The REDC has established the Californium User Facility (CUF) for Neutron Science to make its large inventory of 252Cf sources available to researchers for irradiations inside uncontaminated hot cells. Experiments at the CUF include a land mine detection system, neutron damage testing of solid-state detectors, irradiation of human cancer cells for boron neutron capture therapy experiments and irradiation of rice to induce genetic mutations. PMID:11003521

  17. Production, Distribution, and Applications of Californium-252 Neutron Sources

    Energy Technology Data Exchange (ETDEWEB)

    Balo, P.A.; Knauer, J.B.; Martin, R.C.

    1999-10-03

    The radioisotope {sup 252}Cf is routinely encapsulated into compact, portable, intense neutron sources with a 2.6-year half-life. A source the size of a person's little finger can emit up to 10{sup 11} neutrons/s. Californium-252 is used commercially as a reliable, cost-effective neutron source for prompt gamma neutron activation analysis (PGNAA) of coal, cement, and minerals, as well as for detection and identification of explosives, laud mines, and unexploded military ordnance. Other uses are neutron radiography, nuclear waste assays, reactor start-up sources, calibration standards, and cancer therapy. The inherent safety of source encapsulations is demonstrated by 30 years of experience and by U.S. Bureau of Mines tests of source survivability during explosions. The production and distribution center for the U. S Department of Energy (DOE) Californium Program is the Radiochemical Engineering Development Center (REDC) at Oak Ridge National Laboratory (ORNL). DOE sells The radioisotope {sup 252}Cf is routinely encapsulated into compact, portable, intense neutron sources with a 2.6- year half-life. A source the size of a person's little finger can emit up to 10 neutrons/s. Californium-252 is used commercially as a reliable, cost-effective neutron source for prompt gamma neutron activation analysis (PGNAA) of coal, cement, and minerals, as well as for detection and identification of explosives, laud mines, and unexploded military ordnance. Other uses are neutron radiography, nuclear waste assays, reactor start-up sources, calibration standards, and cancer therapy. The inherent safety of source encapsulations is demonstrated by 30 years of experience and by U.S. Bureau of Mines tests of source survivability during explosions. The production and distribution center for the U. S Department of Energy (DOE) Californium Program is the Radiochemical Engineering Development Center (REDC) at Oak Ridge National Laboratory(ORNL). DOE sells {sup 252}Cf to commercial

  18. Window structure for passivating solar cells based on gallium arsenide

    Science.gov (United States)

    Barnett, Allen M. (Inventor)

    1985-01-01

    Passivated gallium arsenide solar photovoltaic cells with high resistance to moisture and oxygen are provided by means of a gallium arsenide phosphide window graded through its thickness from arsenic rich to phosphorus rich.

  19. Spin Injection in Indium Arsenide

    Directory of Open Access Journals (Sweden)

    Mark eJohnson

    2015-08-01

    Full Text Available In a two dimensional electron system (2DES, coherent spin precession of a ballistic spin polarized current, controlled by the Rashba spin orbit interaction, is a remarkable phenomenon that’s been observed only recently. Datta and Das predicted this precession would manifest as an oscillation in the source-drain conductance of the channel in a spin-injected field effect transistor (Spin FET. The indium arsenide single quantum well materials system has proven to be ideal for experimental confirmation. The 2DES carriers have high mobility, low sheet resistance, and high spin orbit interaction. Techniques for electrical injection and detection of spin polarized carriers were developed over the last two decades. Adapting the proposed Spin FET to the Johnson-Silsbee nonlocal geometry was a key to the first experimental demonstration of gate voltage controlled coherent spin precession. More recently, a new technique measured the oscillation as a function of channel length. This article gives an overview of the experimental phenomenology of the spin injection technique. We then review details of the application of the technique to InAs single quantum well (SQW devices. The effective magnetic field associated with Rashba spin-orbit coupling is described, and a heuristic model of coherent spin precession is presented. The two successful empirical demonstrations of the Datta Das conductance oscillation are then described and discussed.

  20. Production of extra pure curium and californium preparations

    International Nuclear Information System (INIS)

    Preparations of curium-244,245,248 and californium-249,252 are used for the production of ionizing radiation sources for different applications and fundamental nuclear-physical investigations, placing high requirements on the radiochemical and chemical purity of the preparations. Extraction chromatography using di-(2-ethylhexyl)phosphoric acid (D2EHPA) as extractant was chosen to prepare extra pure curium and californium preparations. In order to identify the optimal conditions of Cm-Cf separation and to remove impurities from them (reagent and other impurities), investigations were performed into the effect of impurities (Na+, Ca2+, Al3+, Fe2+, Fe3+ taken as example), extractant and eluent concentration and solution flow rate on the efficiency of mutual purification of Cm and Cf. Both theoretical and experimental estimations were made of the maximum concentration at which the impurities do not affect the process. The conditions chosen allow mutual purification of milligram amounts of Cm and Cf from impurity elements at E(pur) =102 - 103 during a single chromatographic cycle (E(pur) =>103) using a column with 5 - 10 cm3 volume. In this case the production yield exceeds 98%. The purification of milligram amounts of curium and californium from fission products (lanthanides in general, cerium in particular) was performed in D2EHPA-decane-PbO2-HNO3 and D2EHPA-decane-DTPA-H3-Cit extraction chromatography systems. In order to establish the optimal conditions, the effect of [D2EHPA] and eluent on the mutual purification of Cm and Cf and on their purification from cerium and impurity elements was studied in the D2EHPA-decane-PbO2-HNO3 system. During a single chromatographic cycle the mutual purification factors of TPE and of their purification from impurity cations achieve 102-103, from cerium - E(pur) > 10. In the D2EHPA-decane-DTPA-H3Cit system, the effect of concentration of extractant and eluent pH on the efficiency of Cm and Cf purification from lanthanides was

  1. Prompt neutron spectrum of the spontaneous fission of californium-252

    International Nuclear Information System (INIS)

    The californium-252 spontaneous fission neutron spectrum was measured in the energy range of 0.01 to 10 MeV by the time-of-flight technique using various neutron detectors. The measurements of 252Cf neutron spectrum at energies of 0.01 to 5 MeV were performed as a function of fission fragment kinetic energy. The mean neutron spectrum energy in the range of 0.7 to 10 MeV was found from the results of measurements. The irregularity in the 252Cf neutron spectrum in the neutron energy range of less than 0.7 MeV compared to theoretical values is discussed. The mechanism of 252Cf neutron emission is also discussed on the basis of neutron yield angle measurements. 12 references

  2. Separation of californium from actinides and lanthanides in aqueous solution by electrochemical formation of amalgams

    International Nuclear Information System (INIS)

    The electrochemical reduction of transneptunium elements (Pu to Cf) and rare earths (Eu, Tm) from aqueous complexing solutions to amalgams was studied over a wide range of cathodic potentials in order to achieve optimal separation of californium. The reduction in acetate media (pH 4.5-4.6) at potentials around -1.7 to -1.9 V1 leads to a quantitative extraction of californium into the mercury phase, while more negative potentials are required for the reduction of the lighter transuranium elements and of the lanthanides. Hence, the optimal conditions for the separation of californium from the investigated actinides and lanthanides were determined. Separation factors α between 25 and 90 were found except in the case of Cf/Eu, where poor values (α varying from 7 to 12) were observed. More negative cathodic potentials decrease the selectivity of the reduction process. A similar study with lithium citrate solutions (pH ∝6) shows that satisfactory separation of californium from lighter and heavier actinides is achievable. A separation factor of 88 is obtained for Cf/Am at -1.98 V. The anodic stripping of mixed amalgams (Pu, Am, Cm, Bk, Tm and Cf) Hg in nitric and acetic acid soultions at potentials ranging from +0.1 to -0.7 V proceeds slowly and proved to be ineffective for the separation of californium from light actinides under conditions described. (orig.)

  3. On-line slurry analyses by californium-252

    International Nuclear Information System (INIS)

    In chemical processing technology on-line activation methods gain an increasing importance for process monitoring and control. A method is described according to which the different fluorspar contents at various strategic points of a flotation plant are determined through neutron activation by 100 μg californium-252. A continuous analytical system for onstream process control of slurries was designed and constructed. A compact facility, called SUSAC, allows continuous application of the method on an industrial scale. The main components of the SUSAC facility are the irradiation and measurement cells. The cells are equipped with multistage countercurrent stirrers ensuring a proper radial and vertical distribution of the sample. The hollow shaft of the stirrer of the irradiation cell houses the Cf-source. The NaI-detector has been installed in a recess in the bottom of the measuring cell. The volumes are 9 dm3 for the irradiation cell, 7.5 dm3 for the measuring cell, 1/2 dm3 for the vonnection line and 4 dm3 for feed and drainage lines including the pump. Investigations on the following topics are discussed: selection of stirrers, residence time, flow rate, pulp density, calibration measurements. (T.G.)

  4. Biomedical neutron research at the Californium User Facility for neutron science

    International Nuclear Information System (INIS)

    The Californium User Facility for Neutron Science has been established at Oak Ridge National Laboratory (ORNL). The Californium User Facility (CUF) is a part of the larger Californium Facility, which fabricates and stores compact 252Cf neutron sources for worldwide distribution. The CUF can provide a cost-effective option for research with 252Cf sources. Three projects at the CUF that demonstrate the versatility of 252Cf for biological and biomedical neutron-based research are described: future establishment of a 252Cf-based neutron activation analysis system, ongoing work to produce miniature high-intensity, remotely afterloaded 252Cf sources for tumor therapy, and a recent experiment that irradiated living human lung cancer cells impregnated with experimental boron compounds to test their effectiveness for boron neutron capture therapy

  5. Biomedical neutron research at the Californium User Facility for neutron science

    Energy Technology Data Exchange (ETDEWEB)

    Martin, R.C. [Oak Ridge National Lab., TN (United States); Byrne, T.E. [Roane State Community College, Harriman, TN (United States); Miller, L.F. [Univ. of Tennessee, Knoxville, TN (United States)

    1997-04-01

    The Californium User Facility for Neutron Science has been established at Oak Ridge National Laboratory (ORNL). The Californium User Facility (CUF) is a part of the larger Californium Facility, which fabricates and stores compact {sup 252}Cf neutron sources for worldwide distribution. The CUF can provide a cost-effective option for research with {sup 252}Cf sources. Three projects at the CUF that demonstrate the versatility of {sup 252}Cf for biological and biomedical neutron-based research are described: future establishment of a {sup 252}Cf-based neutron activation analysis system, ongoing work to produce miniature high-intensity, remotely afterloaded {sup 252}Cf sources for tumor therapy, and a recent experiment that irradiated living human lung cancer cells impregnated with experimental boron compounds to test their effectiveness for boron neutron capture therapy.

  6. Proposed Californium-252 User Facility for Neutron Science at Oak Ridge National Laboratory

    International Nuclear Information System (INIS)

    The Radiochemical Engineering Development Center (REDC) at ORNL has petitioned to establish a Californium-252 User Facility for Neutron Science for academic, industrial, and governmental researchers. The REDC Californium Facility (CF) stores the national inventory of sealed 252Cf neutron source for university and research loans. Within the CF, the 252Cf storage pool and two uncontaminated hot cells currently in service for the Californium Program will form the physical basis for the User Facility. Relevant applications include dosimetry and experiments for neutron tumor therapy; fast and thermal neutron activation analysis of materials; experimental configurations for prompt gamma neutron activation analysis; neutron shielding and material damage studies; and hardness testing of radiation detectors, cameras, and electronics. A formal User Facility simplifies working arrangements and agreements between US DOE facilities, academia, and commercial interests

  7. Emergence of californium as the second transitional element in the actinide series.

    Science.gov (United States)

    Cary, Samantha K; Vasiliu, Monica; Baumbach, Ryan E; Stritzinger, Jared T; Green, Thomas D; Diefenbach, Kariem; Cross, Justin N; Knappenberger, Kenneth L; Liu, Guokui; Silver, Mark A; DePrince, A Eugene; Polinski, Matthew J; Van Cleve, Shelley M; House, Jane H; Kikugawa, Naoki; Gallagher, Andrew; Arico, Alexandra A; Dixon, David A; Albrecht-Schmitt, Thomas E

    2015-01-01

    A break in periodicity occurs in the actinide series between plutonium and americium as the result of the localization of 5f electrons. The subsequent chemistry of later actinides is thought to closely parallel lanthanides in that bonding is expected to be ionic and complexation should not substantially alter the electronic structure of the metal ions. Here we demonstrate that ligation of californium(III) by a pyridine derivative results in significant deviations in the properties of the resultant complex with respect to that predicted for the free ion. We expand on this by characterizing the americium and curium analogues for comparison, and show that these pronounced effects result from a second transition in periodicity in the actinide series that occurs, in part, because of the stabilization of the divalent oxidation state. The metastability of californium(II) is responsible for many of the unusual properties of californium including the green photoluminescence. PMID:25880116

  8. Thin Films of Gallium Arsenide and Gallium Aluminum Arsenide by Metalorganic Chemical Vapor Deposition.

    Science.gov (United States)

    Look, Edward Gene Lun

    Low pressure metalorganic chemical vapor deposition (LPMOCVD) of thin films of gallium arsenide (GaAs) and gallium aluminum arsenide (GaAlAs) was performed in a horizontal cold wall chemical vapor deposition (CVD) reactor. The organometallic (group III) sources were triethylgallium (TEGa) and triethylaluminum (TEAl), used in conjunction with arsine (AsH_3) as the group V source. It was found that growth parameters such as growth temperature, pressure, source flow rates and temperatures have a profound effect on the film quality and composition. Depending on the particular combination of conditions, both the surface and overall morphologies may be affected. The films were nondestructively analyzed by Raman and photoreflectance spectroscopies, x-ray diffraction and rocking curve studies, scanning electron microscopy, energy dispersive spectroscopy, Hall measurements and film thicknesses were determined with a step profilometer.

  9. A terminal molybdenum arsenide complex synthesized from yellow arsenic.

    Science.gov (United States)

    Curley, John J; Piro, Nicholas A; Cummins, Christopher C

    2009-10-19

    A terminal molybdenum arsenide complex is synthesized in one step from the reactive As(4) molecule. The properties of this complex with its arsenic atom ligand are discussed in relation to the analogous nitride and phosphide complexes. PMID:19764796

  10. Fissile analysis of Hanford waste using Californium Multiplier/Delayed Neutron Counter system

    International Nuclear Information System (INIS)

    Measurement of low-level (10 ng/g or lower) fissile material (mainly plutonium) in Hanford waste and process samples is becoming increasingly important. A system has been designed consisting of a Californium Multiplier (CFX) and a Delayed Neutron Counter (DNC) to characterize these samples. This report describes hardware and analytical capability of the CFX/DNC system

  11. Study of the shielding for spontaneous fission sources of Californium-252

    International Nuclear Information System (INIS)

    A shielding study is made to attenuate, until maximum permissible levels, the neutrons radiation and photons emitted by spontaneous fission coming from a source of Californium-252. The compound package by a database (Library DLC-23) and the ANISNW code is used, in it version for personal computer. (Author)

  12. Gallium arsenide p-type low temperature thermometers

    International Nuclear Information System (INIS)

    The use of p-type gallium arsenide for resistance thermometry is discussed. This semiconductor can be used for creating a family of thermometers with sufficiently small magnetoresistance and high sensitivity for the 0.3 - 350 K range. Performance characteristics of gallium arsenide doped with zinc, cadmium and manganese in the 1016 - 1018 cm-3 range of concentration and magnetoresistance in fields of up to 5T are examined. (author)

  13. Californium (252Cf) and its use as neutron source in science medicine and technology

    International Nuclear Information System (INIS)

    The application of radionuclides in science and nuclear techniques basically is related to unstable isotopes, which are produced from stable elements in nuclear reactor. Their specifications are various from view point of application . Using of physical and chemical properties of radionuclides in chemistry, for with marking the organic compounds we can exactly explain the mechanism of chemical reactions in medical, biology and bio-chemistry. In these cases the behaviour of radionuclides is very important and the selection of the suitable radionuclides is determined between the elements for investigation aims. The special specification of radio-nuclides analysis such as, half-life, kind of ray and energy should be considered with an special accuracy as well as the laws security regulations from view point of ray-protection should be completely observed mean time working these radio-nuclides. It should be considered that application of radio-isotopes is very important from their special specifications point of view. Applying the radionuclides from technology point of view in sciences and nuclear techniques aren't only limited to three analyses of α, β, and γ, but we can use the share of neutron which are produced from spli ting of heavy nucleus such as Californium252 as a neutron source in the depths of the sea and also determining the concentration of low quantity elements on moon and other spheres. The radioisotope of Californium252 is a neutron useful radiator for investigation in nuclear medical and technology because of automatically rapid split to 3.2% Californium252 radiates 1.34 * 109N/m in each mil/GH which suitable replacement for neutron sources based on (a, n) reaction, for example, Radium-Brellium or Amersium-Brellium. The energy distribution of radiated neutrons from analyzing of Californium252 like the spectrum of neutron which is produced from splitting of U235, Pu239 nucleus has the maximum energy in quantity, En=1 MeV in the range of 1.5 MeV. The

  14. Maskless proton beam writing in gallium arsenide

    International Nuclear Information System (INIS)

    Proton beam writing (PBW) is a direct write technique that employs a focused MeV proton beam which is scanned in a pre-determined pattern over a target material which is subsequently electrochemically etched or chemically developed. By changing the energy of the protons the range of the protons can be changed. The ultimate depth of the structure is determined by the range of the protons in the material and this allows structures to be formed to different depths. PBW has been successfully employed on etchable glasses, polymers and semiconductor materials such as silicon (Si) and gallium arsenide (GaAs). This study reports on PBW in p-type GaAs and compares experimental results with computer simulations using the Atlas (copy right) semiconductor device package from SILVACO. It has already been proven that hole transport is required for the electrochemical etching of GaAs using Tiron (4,5-dihydroxy-m-benzenedisulfonic acid, di-sodium salt). PBW in GaAs results in carrier removal in the irradiated regions and consequently minimal hole transport (in these regions) during electrochemical etching. As a result the irradiated regions are significantly more etch resistant than the non-irradiated regions. This allows high aspect ratio structures to be formed

  15. Maskless proton beam writing in gallium arsenide

    Energy Technology Data Exchange (ETDEWEB)

    Mistry, P. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom) and Nano-Electronics Centre, Advanced Technology Institute, University of Surrey, Guildford GU2 7XH (United Kingdom)]. E-mail: p.mistry@surrey.ac.uk; Gomez-Morilla, I. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom); Smith, R.C. [Nano-Electronics Centre, Advanced Technology Institute, University of Surrey, Guildford GU2 7XH (United Kingdom); Thomson, D. [Advanced Technology Institute, University of Surrey, Guildford GU2 7XH (United Kingdom); Grime, G.W. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom); Webb, R.P. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom); Gwilliam, R. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom); Jeynes, C. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom); Cansell, A. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom); Merchant, M. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom); Kirkby, K.J. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom)

    2007-07-15

    Proton beam writing (PBW) is a direct write technique that employs a focused MeV proton beam which is scanned in a pre-determined pattern over a target material which is subsequently electrochemically etched or chemically developed. By changing the energy of the protons the range of the protons can be changed. The ultimate depth of the structure is determined by the range of the protons in the material and this allows structures to be formed to different depths. PBW has been successfully employed on etchable glasses, polymers and semiconductor materials such as silicon (Si) and gallium arsenide (GaAs). This study reports on PBW in p-type GaAs and compares experimental results with computer simulations using the Atlas (copy right) semiconductor device package from SILVACO. It has already been proven that hole transport is required for the electrochemical etching of GaAs using Tiron (4,5-dihydroxy-m-benzenedisulfonic acid, di-sodium salt). PBW in GaAs results in carrier removal in the irradiated regions and consequently minimal hole transport (in these regions) during electrochemical etching. As a result the irradiated regions are significantly more etch resistant than the non-irradiated regions. This allows high aspect ratio structures to be formed.

  16. Inhalation developmental toxicology studies: Gallium arsenide in mice and rats

    Energy Technology Data Exchange (ETDEWEB)

    Mast, T.J.; Greenspan, B.J.; Dill, J.A.; Stoney, K.H.; Evanoff, J.J.; Rommereim, R.L.

    1990-12-01

    Gallium arsenide is a crystalline compound used extensively in the semiconductor industry. Workers preparing solar cells and gallium arsenide ingots and wafers are potentially at risk from the inhalation of gallium arsenide dust. The potential for gallium arsenide to cause developmental toxicity was assessed in Sprague- Dawley rats and CD-1 (Swiss) mice exposed to 0, 10, 37, or 75 mg/m{sup 3} gallium arsenide, 6 h/day, 7 days/week. Each of the four treatment groups consisted of 10 virgin females (for comparison), and {approx}30 positively mated rats or {approx}24 positively mated mice. Mice were exposed on 4--17 days of gestation (dg), and rats on 4--19 dg. The day of plug or sperm detection was designated as 0 dg. Body weights were obtained throughout the study period, and uterine and fetal body weights were obtained at sacrifice (rats, 20 dg; mice, 18 dg). Implants were enumerated and their status recorded. Live fetuses were sexed and examined for gross, visceral, skeletal, and soft-tissue craniofacial defects. Gallium and arsenic concentrations were determined in the maternal blood and uterine contents of the rats (3/group) at 7, 14, and 20 dg. 37 refs., 11 figs., 30 tabs.

  17. Contribution to clinical dosimetry of californium 252 sources used at Gustave Roussy institute

    International Nuclear Information System (INIS)

    The main characteristics of californium 252 sources are presented in the first part of the report. Dose measurements around Californium sources were performed with a pair of ionization multiplication chambers: the first one has an Aluminium wall and is filled with Argon, the second one a plastic tissue-equivalent gas. A set of experiments was performed in order to investigate the relative influence of beta rays on the response of both chambers. Besides the experimental work a computer program was written to calculate the dose distribution around the actual sources made of a series of small active sources placed in catheters. Theoretical data around small sources can be found in the litterature. The comparison between experimental results and theoretical ones has shown a good agreement. The computer program will be included as a sub-routine in the more general computer program used for patients treated with interstitial therapy

  18. Safety Analysis Report for Packaging (SARP) of the Oak Ridge National Laboratory TRU Californium Shipping Container

    International Nuclear Information System (INIS)

    An analytical evaluation of the Oak Ridge National Laboratory TRU Californium Shipping Container was made in order to demonstrate its compliance with the regulations governing off-site shipment of packages that contain radioactive material. The evaluation encompassed five primary categories: structural integrity, thermal resistance, radiation shielding, nuclear criticality safety, and quality assurance. The results of this evaluation demonstrate that the container complies with the applicable regulations

  19. Emergence of californium as the second transitional element in the actinide series

    OpenAIRE

    Cary, Samantha K.; Vasiliu, Monica; Baumbach, Ryan E.; Stritzinger, Jared T.; GREEN, THOMAS D.; Diefenbach, Kariem; Cross, Justin N.; Knappenberger, Kenneth L.; Liu, Guokui; Silver, Mark A.; DePrince, A. Eugene; Polinski, Matthew J.; Van Cleve, Shelley M.; House, Jane H.; Kikugawa, Naoki

    2015-01-01

    A break in periodicity occurs in the actinide series between plutonium and americium as the result of the localization of 5f electrons. The subsequent chemistry of later actinides is thought to closely parallel lanthanides in that bonding is expected to be ionic and complexation should not substantially alter the electronic structure of the metal ions. Here we demonstrate that ligation of californium(III) by a pyridine derivative results in significant deviations in the properties of the resu...

  20. Metal Insulator Semiconductor Structures on Gallium Arsenide.

    Science.gov (United States)

    Connor, Sean Denis

    Available from UMI in association with The British Library. The compound semiconductor gallium arsenide and its associated aluminium alloys have been the subject of intensive research in recent years. These materials offer the advantage of high electron mobilities coupled with the ability to be 'barrier engineered' leading to high injection efficiencies in bipolar devices. From a technological viewpoint however these materials are difficult to work with and device realisation is a major problem. Both thermal and anodic oxidation of these materials fail to produce a dielectric of sufficient quality for device applications and as a result devices tend to be complex non planar, mesa structures. A technique is proposed whereby the electrical interface is separated from the dielectric by means of a thin layer of AlGaAs, carrier confinement in the active GaAs region being maintained by the potential barriers to holes and electrons formed by the GaAs-AlGaAs junction. The integrity of these barriers is maintained by the provision of a suitable 'capping' dielectric. The electrical characteristics of various dielectric systems on GaAs have been investigated by means of current -voltage, capacitance-voltage and electronic breakdown measurements. Transport mechanisms for leakage current through these systems are identified and the interface properties (viz Fermi level pinning etc.) assessed by means of a direct comparison between experimental capacitance-voltage curves and theoretical data obtained from classical theory. As a technique for producing a convenient, in house 'capping' dielectric with good electrical and mechanical properties, the plasma anodisation of deposited aluminium films has been investigated. The anodisation parameters have been optimised for oxidation of these films in a microwave sustained oxygen plasma to give alumina films of around 500 A. A qualitative model for the anodisation process, involving linear and parabolic growth kinetics is proposed and

  1. Measurements of integral cross sections in the californium-252 fission neutron spectrum

    International Nuclear Information System (INIS)

    In a low-scattering arrangement cross sections averaged over the californium-252 spontaneous fission neutron spectrum were measured. The reactions 27Al(n,α)46Ti, 47Ti, 48Ti(n,p), 54Fe,56Fe(n,p), 58Ni(n,p), 64Zn(n,p), 115In(n,n') were studied in order to obtain a consistent set of threshold detectors used in fast neutron flux density measurements. Overall uncertainties between 2 and 2.5% could be achieved; corrections due to neutron scattering in source and samples are discussed

  2. Measurement of californium-252 gamma photons depth dose distribution in tissue equivalent material. Vol. 4

    International Nuclear Information System (INIS)

    Phantom of tissue equivalent material with and without bone was used measuring depth dose distribution of gamma-rays from californium-252 source. The source was positioned at center of perspex walled phantom. Depth dose measurements were recorded for X, Y and Z planes at different distances from source. TLD 700 was used for measuring the dose distribution. Results indicate that implantation of bone in tissue equivalent medium cause changes in the gamma depth dose distribution which varies according to variation in bone geometry. 9 figs

  3. Gallium interstitial contributions to diffusion in gallium arsenide

    OpenAIRE

    Schick, J. T.; Morgan, C. G.; Papoulias, P

    2011-01-01

    Enthalpies of formation of gallium interstitials and all the other native point defects in gallium arsenide are calculated using the same well-converged \\emph{ab initio} techniques. Using these results, equilibrium concentrations of these defects are computed as a function of chemical potential from the arsenic rich limit to the gallium rich limit and as a function of the doping level from $p$-type to $n$-type. Gallium interstitial diffusion paths and migration barriers for diffusion are dete...

  4. Plasma chemical etching of gallium arsenide in chlorine

    International Nuclear Information System (INIS)

    One of the most promising methods, used for the examination of the kinetics and determination of the moments of the start and completion of the processes of plasma chemical etching of a wide range of inorganic materials is optical emission spectroscopy. Therefore, the aim of this work was to examine the kinetic relationships of etching of gallium arsenide in chlorine plasma and determine the possibilities of the optical emission spectroscopy for examination and control of the process

  5. Spontaneous Partitioning of Californium from Curium: Curious Cases from the Crystallization of Curium Coordination Complexes

    Energy Technology Data Exchange (ETDEWEB)

    Cary, Samantha K.; Silver, Mark A.; Liu, Guokui; Wang, Jamie C.; Bogart, Justin A.; Stritzinger, Jared T.; Arico, Alexandra A.; Hanson, Kenneth; Schelter, Eric J.; Albrecht-Schmitt, Thomas E.

    2015-12-07

    The reaction of 248CmCl3 with excess 2,6-pyridinedicarboxylic acid (DPA) under mild solvothermal conditions results in crystallization of the tris-chelate complex Cm(HDPA)3·H2O. Approximately half of the curium remains in solution at the end of this process, and evaporation of the mother liquor results in crystallization of the bis-chelate complex [Cm(HDPA)- (H2DPA)(H2O)2Cl]Cl·2H2O. 248Cm is the daughter of the α decay of 252Cf and is extracted in high purity from this parent. However, trace amounts of 249,250,251Cf are still present in all samples of 248Cm. During the crystallization of Cm(HDPA)3·H2O and [Cm(HDPA)(H2DPA)(H2O)2Cl]Cl·2H2O, californium(III) spontaneously separates itself from the curium complexes and is found doped within crystals of DPA in the form of Cf(HDPA)3. These results add to the growing body of evidence that the chemistry of californium is fundamentally different from that of earlier actinides.

  6. Testing of gallium arsenide solar cells on the CRRES vehicle

    International Nuclear Information System (INIS)

    A flight experiment was designed to determine the optimum design for gallium arsenide (GaAs) solar cell panels in a radiation environment. Elements of the experiment design include, different coverglass material and thicknesses, welded and soldered interconnects, different solar cell efficiencies, different solar cell types, and measurement of annealing properties. This experiment is scheduled to fly on the Combined Release and Radiation Effects Satellite (CRRES). This satellite will simultaneously measure the radiation environment and provide engineering data on solar cell degradation that can be directly related to radiation damage

  7. Liquid phase epitaxy of gallium arsenide - a review

    International Nuclear Information System (INIS)

    Liquid phase epitaxy of gallium arsenide has been investigated intensively from the late 1960's to the present and has now a special place in the manufacture of wide band, compound semiconductor radiation detectors. Although this particular process appears to have gained prominence in the last three decades, the authors point out that its origins reach back to 1836 when Frankenheim made his first observations. A brief review is presented from a semiconductor applications point of view on how this subject developed. 70 refs., 5 figs

  8. Macroscopic diffusion models for precipitation in crystalline gallium arsenide

    Energy Technology Data Exchange (ETDEWEB)

    Kimmerle, Sven-Joachim Wolfgang

    2009-09-21

    Based on a thermodynamically consistent model for precipitation in gallium arsenide crystals including surface tension and bulk stresses by Dreyer and Duderstadt, we propose two different mathematical models to describe the size evolution of liquid droplets in a crystalline solid. The first model treats the diffusion-controlled regime of interface motion, while the second model is concerned with the interface-controlled regime of interface motion. Our models take care of conservation of mass and substance. These models generalise the well-known Mullins- Sekerka model for Ostwald ripening. We concentrate on arsenic-rich liquid spherical droplets in a gallium arsenide crystal. Droplets can shrink or grow with time but the centres of droplets remain fixed. The liquid is assumed to be homogeneous in space. Due to different scales for typical distances between droplets and typical radii of liquid droplets we can derive formally so-called mean field models. For a model in the diffusion-controlled regime we prove this limit by homogenisation techniques under plausible assumptions. These mean field models generalise the Lifshitz-Slyozov-Wagner model, which can be derived from the Mullins-Sekerka model rigorously, and is well understood. Mean field models capture the main properties of our system and are well adapted for numerics and further analysis. We determine possible equilibria and discuss their stability. Numerical evidence suggests in which case which one of the two regimes might be appropriate to the experimental situation. (orig.)

  9. Point defects and electric compensation in gallium arsenide single crystals

    International Nuclear Information System (INIS)

    In the present thesis the point-defect budget of gallium arsenide single crystals with different dopings is studied. It is shown, in which way the concentration of the single point defects depende on the concentration of the dopants, the stoichiometry deviation, and the position of the Fermi level. For this serve the results of the measurement-technical characterization of a large number of samples, in the fabrication of which these parameters were directedly varied. The main topic of this thesis lies in the development of models, which allow a quantitative description of the experimentally studied electrical and optical properties of gallium arsenide single crystals starting from the point-defect concentrations. Because from point defects charge carriers can be set free, their concentration determines essentially the charge-carrier concentration in the bands. In the ionized state point defects act as scattering centers for free charge carriers and influence by this the drift mobility of the charge carriers. A thermodynamic modeling of the point-defect formation yields statements on the equilibrium concentrations of the point defects in dependence on dopant concentration and stoichiometry deviation. It is show that the electrical properties of the crystals observed at room temperature result from the kinetic suppression of processes, via which the adjustment of a thermodynamic equilibrium between the point defects is mediated

  10. Methods for forming group III-arsenide-nitride semiconductor materials

    Science.gov (United States)

    Major, Jo S. (Inventor); Welch, David F. (Inventor); Scifres, Donald R. (Inventor)

    2002-01-01

    Methods are disclosed for forming Group III-arsenide-nitride semiconductor materials. Group III elements are combined with group V elements, including at least nitrogen and arsenic, in concentrations chosen to lattice match commercially available crystalline substrates. Epitaxial growth of these III-V crystals results in direct bandgap materials, which can be used in applications such as light emitting diodes and lasers. Varying the concentrations of the elements in the III-V crystals varies the bandgaps, such that materials emitting light spanning the visible spectra, as well as mid-IR and near-UV emitters, can be created. Conversely, such material can be used to create devices that acquire light and convert the light to electricity, for applications such as full color photodetectors and solar energy collectors. The growth of the III-V crystals can be accomplished by growing thin layers of elements or compounds in sequences that result in the overall lattice match and bandgap desired.

  11. Temperature dependence of carrier capture by defects in gallium arsenide

    Energy Technology Data Exchange (ETDEWEB)

    Wampler, William R. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Modine, Normand A. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2015-08-01

    This report examines the temperature dependence of the capture rate of carriers by defects in gallium arsenide and compares two previously published theoretical treatments of this based on multi phonon emission (MPE). The objective is to reduce uncertainty in atomistic simulations of gain degradation in III-V HBTs from neutron irradiation. A major source of uncertainty in those simulations is poor knowledge of carrier capture rates, whose values can differ by several orders of magnitude between various defect types. Most of this variation is due to different dependence on temperature, which is closely related to the relaxation of the defect structure that occurs as a result of the change in charge state of the defect. The uncertainty in capture rate can therefore be greatly reduced by better knowledge of the defect relaxation.

  12. Surface-enhanced gallium arsenide photonic resonator with a quality factor of six million

    OpenAIRE

    Guha, Biswarup; Marsault, Felix; Cadiz, Fabian; Morgenroth, Laurence; Ulin, Vladimir; Berkovitz, Vladimir; Lemaître, Aristide; Gomez, Carmen; Amo, Alberto; Combrié, Sylvian; Gérard, Bruno; Leo, Giuseppe; Favero, Ivan

    2016-01-01

    Gallium Arsenide and related compound semiconductors lie at the heart of optoelectronics and integrated laser technologies. Shaped at the micro and nano-scale, they allow strong interaction with quantum dots and quantum wells, and promise to result in stunning devices. However gallium arsenide optical structures presently exhibit lower performances than their silicon-based counterparts, notably in nanophotonics where the surface plays a chief role. Here we report on advanced surface control o...

  13. Fast and efficient charge breeding of the Californium rare isotope breeder upgrade electron beam ion source

    Energy Technology Data Exchange (ETDEWEB)

    Ostroumov, P. N., E-mail: ostroumov@anl.gov; Barcikowski, A.; Dickerson, C. A.; Perry, A.; Sharamentov, S. I.; Vondrasek, R. C.; Zinkann, G. P. [Argonne National Laboratory, Argonne, Illinois 60439 (United States); Pikin, A. I. [Brookhaven National Laboratory, Upton, New York 11973 (United States)

    2015-08-15

    The Electron Beam Ion Source (EBIS), developed to breed Californium Rare Isotope Breeder Upgrade (CARIBU) radioactive beams at Argonne Tandem Linac Accelerator System (ATLAS), is being tested off-line. A unique property of the EBIS is a combination of short breeding times, high repetition rates, and a large acceptance. Overall, we have implemented many innovative features during the design and construction of the CARIBU EBIS as compared to the existing EBIS breeders. The off-line charge breeding tests are being performed using a surface ionization source that produces singly charged cesium ions. The main goal of the off-line commissioning is to demonstrate stable operation of the EBIS at a 10 Hz repetition rate and a breeding efficiency into single charge state higher than 15%. These goals have been successfully achieved and exceeded. We have measured (20% ± 0.7%) breeding efficiency into the single charge state of 28+ cesium ions with the breeding time of 28 ms. In general, the current CARIBU EBIS operational parameters can provide charge breeding of any ions in the full mass range of periodic table with high efficiency, short breeding times, and sufficiently low charge-to-mass ratio, 1/6.3 for the heaviest masses, for further acceleration in ATLAS. In this paper, we discuss the parameters of the EBIS and the charge breeding results in a pulsed injection mode with repetition rates up to 10 Hz.

  14. Fast and efficient charge breeding of the Californium rare isotope breeder upgrade electron beam ion source

    International Nuclear Information System (INIS)

    The Electron Beam Ion Source (EBIS), developed to breed Californium Rare Isotope Breeder Upgrade (CARIBU) radioactive beams at Argonne Tandem Linac Accelerator System (ATLAS), is being tested off-line. A unique property of the EBIS is a combination of short breeding times, high repetition rates, and a large acceptance. Overall, we have implemented many innovative features during the design and construction of the CARIBU EBIS as compared to the existing EBIS breeders. The off-line charge breeding tests are being performed using a surface ionization source that produces singly charged cesium ions. The main goal of the off-line commissioning is to demonstrate stable operation of the EBIS at a 10 Hz repetition rate and a breeding efficiency into single charge state higher than 15%. These goals have been successfully achieved and exceeded. We have measured (20% ± 0.7%) breeding efficiency into the single charge state of 28+ cesium ions with the breeding time of 28 ms. In general, the current CARIBU EBIS operational parameters can provide charge breeding of any ions in the full mass range of periodic table with high efficiency, short breeding times, and sufficiently low charge-to-mass ratio, 1/6.3 for the heaviest masses, for further acceleration in ATLAS. In this paper, we discuss the parameters of the EBIS and the charge breeding results in a pulsed injection mode with repetition rates up to 10 Hz

  15. Design of a homogeneous subcritical nuclear reactor based on thorium with a source of californium 252

    International Nuclear Information System (INIS)

    Full text: One of the energy alternatives to fossil fuels which do not produce greenhouse gases is the nuclear energy. One of the drawbacks of this alternative is the generation of radioactive wastes of long half-life and its relation to the generation of nuclear materials to produce weapons of mass destruction. An option to these drawbacks of nuclear energy is to use Thorium as part of the nuclear fuel which it becomes in U233 when capturing neutrons, that is a fissile material. In this paper Monte Carlo methods were used to design a homogeneous subcritical reactor based on thorium. As neutron reflector graphite was used. The reactor core is homogeneous and is formed of 70% light water as moderator, 12% of enriched uranium UO2(NO3)4 and 18% of thorium Th(NO3)4 as fuel. To start the nuclear fission chain reaction an isotopic source of californium 252 was used with an intensity of 4.6 x 107 s-1. In the design the value of the effective multiplication factor, whose value turned out keff <1 was calculated. Also, the neutron spectra at different distances from the source and the total fluence were calculated, as well as the values of the ambient dose equivalent in the periphery of the reactor. (Author)

  16. Fast and efficient charge breeding of the Californium rare isotope breeder upgrade electron beam ion source.

    Science.gov (United States)

    Ostroumov, P N; Barcikowski, A; Dickerson, C A; Perry, A; Pikin, A I; Sharamentov, S I; Vondrasek, R C; Zinkann, G P

    2015-08-01

    The Electron Beam Ion Source (EBIS), developed to breed Californium Rare Isotope Breeder Upgrade (CARIBU) radioactive beams at Argonne Tandem Linac Accelerator System (ATLAS), is being tested off-line. A unique property of the EBIS is a combination of short breeding times, high repetition rates, and a large acceptance. Overall, we have implemented many innovative features during the design and construction of the CARIBU EBIS as compared to the existing EBIS breeders. The off-line charge breeding tests are being performed using a surface ionization source that produces singly charged cesium ions. The main goal of the off-line commissioning is to demonstrate stable operation of the EBIS at a 10 Hz repetition rate and a breeding efficiency into single charge state higher than 15%. These goals have been successfully achieved and exceeded. We have measured (20% ± 0.7%) breeding efficiency into the single charge state of 28+ cesium ions with the breeding time of 28 ms. In general, the current CARIBU EBIS operational parameters can provide charge breeding of any ions in the full mass range of periodic table with high efficiency, short breeding times, and sufficiently low charge-to-mass ratio, 1/6.3 for the heaviest masses, for further acceleration in ATLAS. In this paper, we discuss the parameters of the EBIS and the charge breeding results in a pulsed injection mode with repetition rates up to 10 Hz. PMID:26329185

  17. Neutron activation analysis at the Californium User Facility for Neutron Science

    International Nuclear Information System (INIS)

    The Californium User Facility (CUF) for Neutron Science has been established to provide 252Cf-based neutron irradiation services and research capabilities including neutron activation analysis (NAA). A major advantage of the CUF is its accessibility and controlled experimental conditions compared with those of a reactor environment The CUF maintains the world's largest inventory of compact 252Cf neutron sources. Neutron source intensities of ≤ 1011 neutrons/s are available for irradiations within a contamination-free hot cell, capable of providing thermal and fast neutron fluxes exceeding 108 cm-2 s-1 at the sample. Total flux of ≥109 cm-2 s-1 is feasible for large-volume irradiation rabbits within the 252Cf storage pool. Neutron and gamma transport calculations have been performed using the Monte Carlo transport code MCNP to estimate irradiation fluxes available for sample activation within the hot cell and storage pool and to design and optimize a prompt gamma NAA (PGNAA) configuration for large sample volumes. Confirmatory NAA irradiations have been performed within the pool. Gamma spectroscopy capabilities including PGNAA are being established within the CUF for sample analysis

  18. Long-term effects of an intracavitary treatment with californium-252 on normal tissue

    International Nuclear Information System (INIS)

    About one hundred fifty swine were exposed to either radium-226 or californium-252 sources in the uterine cervix to determine an RBE for both acute and long-term effects. That value for early changes in the tissues at risk in the treatment of cervical cancer was between 6.2 and 6.8. The incidence of complications increased with time after exposure, especially among animals treated with 252Cf. Analysis of rectal injury showed that ulceration occurred frequently within a year postexposure at doses between 1600 and 2400 rad calculated at 2 cm lateral to the source midline. Fat necrosis and smooth muscle atrophy, resulting in a local rectal stricture, were delayed changes observed in some animals. The lower ureter was the site for a greater frequency of complications than the GI tract. Ureteral stricture often occurred at doses of 1200 rad from 252Cf and 7000 rad from 226Ra. Observation of delayed effects in the uterine-cervix in animals held up to 4 years postexposure indicate that the RBE for 252Cf may be increased to a value as high as 18, while repair may have even decreased it to about 5.6 in the rectum. Fifty swine are still being observed for long-term effects after doses above 800 rad from 252Cf and 5000 rad from 226Ra

  19. Manganese determination om minerals by activation analysis, using the californium-252 as a neutron source

    International Nuclear Information System (INIS)

    Neutron Activation Analysis, using a Californium-252 neutron source, has been applied for the determination of manganese in ores such as pyrolusite, rodonite (manganese silicate)' and blending used in dry-batteries The favorable nuclear properties of manganese, such as high thermal neutron cross-section for the reaction 55Mn (n.gamma)56 Mn, high concentration of manganese in the matrix and short half - life of 56Mn, are an ideal combination for non-destructive analysis of manganese in ores. Samples and standards of manganese dioxide were irradiated for about 20 minutes, followed by a 4 to 15 minutes decay and counted in a single channel pulse-height discrimination using a NaI(Tl) scintillation detector. Counting time was equal to 10 minutes. The interference of nuclear reactions 56Fe(n,p)56Mn and 59 Co (n, α)56 were studied, as well as problems in connection with neutron shadowing during irradiation, gamma-rays attenuation during counting and influence of granulometry of samples. One sample,was also analysed by wet-chemical method (sodium bismuthate) in order to compare results. As a whole, i t was shown that the analytical method of neutron activation for manganese in ores and blending, is a method simple, rapid and with good precision and accuracy. (author)

  20. Five-year cure of cervical cancer treated using californium-252 neutron brachytherapy

    International Nuclear Information System (INIS)

    Female pelvic carcinoma is one of the common malignancies seen at the University of Kentucky Medical Center and often presents in an advanced stage. In 1976, the authors began to test californium-252 neutron brachytherapy (NT) for its efficacy for control of primary and recurrent advanced uterine, cervix, and vaginal cancers. The first protocol used was 5000-5500 rad of whole pelvis irradiation followed by 1-2 Cf-252 insertions using a single tandem placed in the utero-cervico-vaginal region. Of 27 patients with primary carcinomas treated, 10 are alive and well 5 year later (37%). Two of two recurrent tumors were locally controlled but failed later. These patients had advanced cervical, vaginal, or endometrial carcinomas. In 1977, a transitional year, treatment of only unfavorable stages and presentations with NT was initiated. Similar results were obtained with NT as compared to conventional photon therapy (PT). Further improvement in treatment results can be anticipated as NT brachytherapy is used for advanced cancer therapy by more effective treatment schedules and radiation doses. Cf-252 can be used as a radium substitute and achieved similar rates of tumor control and 5-year survivals. 21 references, 2 tables

  1. Uptake and distribution of californium-252 chloride administered intraperitoneally, intravenously or intratracheally and the effect of in vivo DTPA chelation on intratracheal instillation in the rat

    International Nuclear Information System (INIS)

    The first phase of this investigation, comprising of three groups of animals, was designed to study the fate of californium-252 chloride administered intraperitoneally, intravenously or intratracheally. The second phase, which consisted of two groups of animals, was designed to examine the effectiveness of DTPA chelation therapy in accelerating the excretion and preventing the deposition of californium-252 chloride instilled into the lungs of rats. Immediately following the dose administration of 2 uCi of californium-252 chloride which was dissolved in 0.2 ml of 0.9% NaCl at pH 3.5, each rat was placed in a metabolism cage. Each rat in the first group of phase II was given intraperitoneal injection of CaNa3 DTPA (50 mg/kg) and each rat in the second group was given intraperitoneal injections of 0.9% NaCl. Injections of the DTPA or the NaCl sham were initiated immediately after the intratracheal administration of californium-252 chloride and were continued every three days until sacrifice. Following intraperitoneal, intravenous or intratracheal administration, the whole body retention of californium as a function of time was described by a three component exponential equation. For each mode of administration the short term component exhibited a biological half-life of between 5 and 10 hours; the intermediate component between 4 and 6 days; and the long term component between 200 and 300 days. The organ data obtained following intraperitoneal and intravenous administration were indistinguishable. On day one, the liver retained about 9% of the administered dose and the kidneys retained 2.4%. Retention for these organs decreased to about 1% by day 32. The femurs maintained an almost constant level of 4.5% of the injected dose over the 32 days. The lungs, spleen, heart, and testes showed significant retention of californium

  2. ENEA results in the international comparison organized by BIPM for the measurament of neutron fluxes of a Californium source

    International Nuclear Information System (INIS)

    During the period between May 1978 and August 1984 under the auspices of Section III of CCEMRI of CIPM it has been carried out the international intercomparison of Californium neutron source emission rate. The previous intercomparison was based on Ra-Be (α -n) source measuraments, which took place between 1959 and 1965, and the results showed a total spread of +- 3%. Owing to the better accuracy achived over the following decade the Ra-Be intercomparison was no longer representative of the state of the art, therefore it was decided to arrange the intercomparison based on Californium which in the meantime reached a wide use in the world. Contributions to the intercomparison were received from fourteen laboratories representative of twelve Nations plus the BIPM. The results put into evidence a considerable advance on accuracy in the neutron source emission rate measuraments. The standard deviation of the residuals obtained from least square fit of normalized data resulted +- 0,57%. In the present report it is widely described the Manganese bath method used at ENEA, CRE Casaccia in Roma, and the experimental procedure followed for its absolute calibration. All measuraments are reported and analysed, including those effectuated for corrective factors determination. The final results obtained at ENEA for the circulated Californium source is (3,457 +- 0,013) 10*H7 neutron/s. The analysis of data from all partecipantes has been effectuated and concluded by J. Axton in March 1986 and the conclusions which have been showed in the present report put in evidence the satisfactory results achived by the ENEA

  3. Feasibility and market potential of protein determination of wheat using californium-252

    International Nuclear Information System (INIS)

    To evaluate the feasibility of protein determination by capture gamma-ray analysis using californium-252 neutrons, an in-situ protein analysis system for use by grain handlers has been examined. Three 227 kilogram (approximately) lots of wheat were used to determine the amount of nitrogen present. Protein analyses by the Kjeldahl method were obtained from samples taken before and after the capture gamma-ray analyses. The 5.267-MeV gamma-ray was selected for use in this study as a compromise between efficiency and interference from other elements. The associated counting equipment was a multichannel analyzer with pulse shaping electronic and analysis computing equipment. A linear regression program was used to compare the regions of interest to the Kjeldahl protein averages. The counts composing each peak were summed and normalized using the total count of the hydrogen peak. The normalized nitrogen percentages indicate a significant correlation between the spectral regions and the Kjeldahl analyses. To a first approximation, the value of wheat is the wheat protein. At the present time, protein testing of wheat is destructive, cumbersome, and time-consuming as compared to the potential for capture gamma-ray analysis testing. Assuming that such a protein analysis unit can analyze 42 tonne of wheat per hour, over 120 units would be needed to monitor one-half the U.S. annual wheat production. A 0.5% improvement in processor realizations and grain throughput value of $167.00 per tonne will result in a projected savings of $150,000 per year per unit

  4. Oxygen enhancement ratio (OER) and therapeutic gain factor (GF) for californium-252 at low dose rate

    International Nuclear Information System (INIS)

    The potential benefit of the introduction of californium-252 in interstitial and intracavitary therapy is related to the greater efficiency of its neutron emission against anoxic cancer cells. In that respect, the oxygen enhancement ratio (OER) of the 252Cf emission has been determined for a continuous low dose rate irradiation. The biological system is growth inhibition in Vicia faba bean roots. A new Vicia faba ''BelB'' strain has been used, which better tolerates long periods (up to about 10 hours) of anoxia. In a first series of experiments, for a 252Cf (Dsub(n+γ)) dose rate of 0.11 Gy.h-1, an OER of 1.4+-0.1 was observed (the γ contribution Dγ to the total absorbed dose Dsub(n+γ) was 0.35 at the position of the root tips). In a second series of experiments, in somewhat different geometrical conditions with a 252Cf (Dsub(n+γ)) dose rate of 0.13 Gy.h-1, an OER of 1.5+-0.1 was observed (Dγ/Dsub(n+γ)=0.42). The OER values observed for similar irradiation times, with iridium-192 γ-rays, were 2.3+-0.2 and 2.6+-0.1 respectively, which leads to therapeutic gain factors (GF) of 1.6 and 1.7 respectively. These GF values are slightly lower than those previously obtained (GF=1.8) on the same system, with d(50)-Be p(75)-Be and 15 MeV neutron beams

  5. Application of TSH bioindicator for studying the biological efficiency of neutrons from californium-252 source

    International Nuclear Information System (INIS)

    The effectiveness of neutrons from a Californium-252 source in the induction of various abnormalities in the Tradescantia clone 4430 stamen hair cells (TSH-assay) was studied. The special attention was paid to check whether any enhancement in effects caused by process of boron neutron capture is visible in the cells enriched with boron ions. Two chemicals (borax and BSH) were applied to introduce boron-10 ions into cells. Inflorescence, normal or pretreated with chemicals containing boron, were irradiated in the air with neutrons from a Cf-252 source at KAERI, Taejon, Korea. To estimate the relative biological effectiveness (RBE) in the induction of gene mutations of the neutron beam under the study, Tradescantia inflorescences, without any chemical pretreatment, were irradiated with various doses of X-rays. The ranges of radiation doses used were 0-0.1 Gy in neutrons and 0-0.5 Gy in X-rays. After the time needed to complete the postirradiation repair Tradescantia cuttings were transferred to Cracow, where screening of gene and lethal; mutations, cell cycle alterations in somatic cells have been done, and dose response relationships were figured. The maximal RBE values were estimated in the range of 4.6-6.8. Alterations of RBE value were observed; from 6.8 to 7.8 in the case of plants pretreated with 240 ppm of B-10 from borax, and 4.6 to 6.1 in the case of 400 ppm of B-10 from BSH. Results showed a slight, although statistically insignificant increase in biological efficacy of radiation from the Cf-252 source in samples pretreated with boron containing chemicals. (author)

  6. Noble Metal Arsenides and Gold Inclusions in Northwest Africa 8186

    Science.gov (United States)

    Srinivasan, P.; Agee, C. B.; McCubbin, F. M.; Rahman, Z.; Keller, L. P.

    2016-01-01

    CK carbonaceous chondrites are a highly thermally altered group of carbonaceous chondrites, experiencing temperatures ranging between approx.576-867 C. Additionally, the mineralogy of the CK chondrites record the highest overall oxygen fugacity of all chondrites, above the fayalite-magnetite-quartz (FMQ) buffer. Metallic Fe-Ni is extremely rare in CK chondrites, but magnetite and Fe,Ni sulfides are commonly observed. Noble metal-rich inclusions have previously been found in some magnetite and sulfide grains. These arsenides, tellurides, and sulfides, which contain varying amounts of Pt, Ru, Os, Te, As, Ir, and S, are thought to form either by condensation from a solar gas, or by exsolution during metamorphism on the chondritic parent body. Northwest Africa (NWA) 8186 is a highly metamorphosed CK chondrite. This meteorite is predominately composed of NiO-rich forsteritic olivine (Fo65), with lesser amounts of plagioclase (An52), augite (Fs11Wo49), magnetite (with exsolved titanomagnetite, hercynite, and titanohematite), monosulfide solid solution (with exsolved pentlandite), and the phosphate minerals Cl-apatite and merrillite. This meteorite contains coarse-grained, homogeneous silicates, and has 120deg triple junctions between mineral phases, which indicates a high degree of thermal metamorphism. The presence of NiO-rich olivine, oxides phases all bearing Fe3+, and the absence of metal, are consistent with an oxygen fugacity above the FMQ buffer. We also observed noble metal-rich phases within sulfide grains in NWA 8186, which are the primary focus of the present study.

  7. Divalent and trivalent gas-phase coordination complexes of californium: evaluating the stability of Cf(ii).

    Science.gov (United States)

    Dau, Phuong D; Shuh, David K; Sturzbecher-Hoehne, Manuel; Abergel, Rebecca J; Gibson, John K

    2016-08-01

    The divalent oxidation state is increasingly stable relative to the trivalent state for the later actinide elements, with californium the first actinide to exhibit divalent chemistry under moderate conditions. Although there is evidence for divalent Cf in solution and solid compounds, there are no reports of discrete complexes in which Cf(II) is coordinated by anionic ligands. Described here is the divalent Cf methanesulfinate coordination complex, Cf(II)(CH3SO2)3(-), prepared in the gas phase by reductive elimination of CH3SO2 from Cf(III)(CH3SO2)4(-). Comparison with synthesis of the corresponding Sm and Cm complexes reveals reduction of Cf(III) and Sm(III), and no evidence for reduction of Cm(III). This reflects the comparative 3+/2+ reduction potentials: Cf(3+) (-1.60 V) ≈ Sm(3+) (-1.55 V) ≫ Cm(3+) (-3.7 V). Association of O2 to the divalent complexes is attributed to formation of superoxides, with recovery of the trivalent oxidation state. The new gas-phase chemistry of californium, now the heaviest element to have been studied in this manner, provides evidence for Cf(II) coordination complexes and similar chemistry of Cf and Sm. PMID:27424652

  8. Hypoxic versus normoxic external-beam irradiation of cervical carcinoma combined with californium-252 neutron brachytherapy. Comparative treatment results of a 5-year randomized study

    Czech Academy of Sciences Publication Activity Database

    Tačev, T.; Vacek, Antonín; Ptáčková, B.; Strnad, V.

    2005-01-01

    Roč. 181, č. 5 (2005), s. 273-284. ISSN 0179-7158 Institutional research plan: CEZ:AV0Z50040507 Keywords : cervical carcinoma * hypoxyradiotherapy * californium-252 Subject RIV: BO - Biophysics Impact factor: 3.490, year: 2005

  9. The comparison between gallium arsenide and indium gallium arsenide as materials for solar cell performance using Silvaco application

    Energy Technology Data Exchange (ETDEWEB)

    Zahari, Suhaila Mohd; Norizan, Mohd Natashah; Mohamad, Ili Salwani; Osman, Rozana Aina Maulat; Taking, Sanna [School of Microelectronic Engineering, Universiti Malaysia Perlis, Kampus Pauh Putra, 02600 Arau, Perlis (Malaysia)

    2015-05-15

    The work presented in this paper is about the development of single and multilayer solar cells using GaAs and InGaAs in AM1.5 condition. The study includes the modeling structure and simulation of the device using Silvaco applications. The performance in term of efficiency of Indium Gallium Arsenide (InGaAs) and GaAs material was studied by modification of the doping concentration and thickness of material in solar cells. The efficiency of the GaAs solar cell was higher than InGaAs solar cell for single layer solar cell. Single layer GaAs achieved an efficiency about 25% compared to InGaAs which is only 2.65% of efficiency. For multilayer which includes both GaAs and InGaAs, the output power, P{sub max} was 8.91nW/cm² with the efficiency only 8.51%. GaAs is one of the best materials to be used in solar cell as a based compared to InGaAs.

  10. Surface-enhanced gallium arsenide photonic resonator with a quality factor of six million

    CERN Document Server

    Guha, Biswarup; Cadiz, Fabian; Morgenroth, Laurence; Ulin, Vladimir; Berkovitz, Vladimir; Lemaître, Aristide; Gomez, Carmen; Amo, Alberto; Combrié, Sylvian; Gérard, Bruno; Leo, Giuseppe; Favero, Ivan

    2016-01-01

    Gallium Arsenide and related compound semiconductors lie at the heart of optoelectronics and integrated laser technologies. Shaped at the micro and nano-scale, they allow strong interaction with quantum dots and quantum wells, and promise to result in stunning devices. However gallium arsenide optical structures presently exhibit lower performances than their silicon-based counterparts, notably in nanophotonics where the surface plays a chief role. Here we report on advanced surface control of miniature gallium arsenide optical resonators, using two distinct techniques that produce permanent results. One leads to extend the lifetime of free-carriers and enhance luminescence, while the other strongly reduces surface absorption originating from mid-gap states and enables ultra-low optical dissipation devices. With such surface control, the quality factor of wavelength-sized optical disk resonators is observed to rise up to six million at telecom wavelength, greatly surpassing previous realizations and opening n...

  11. Progress to a Gallium-Arsenide Deep-Center Laser

    Directory of Open Access Journals (Sweden)

    Janet L. Pan

    2009-10-01

    Full Text Available Although photoluminescence from gallium-arsenide (GaAs deep-centers was first observed in the 1960s, semiconductor lasers have always utilized conduction-to-valence-band transitions. Here we review recent materials studies leading to the first GaAs deep-center laser. First, we summarize well-known properties: nature of deep-center complexes, Franck-Condon effect, hotoluminescence. Second, we describe our recent work: insensitivity of photoluminescence with heating, striking differences between electroluminescence and photoluminescence, correlation between transitions to deep-states and absence of bandgap-emission. Room-temperature stimulated-emission from GaAs deep-centers was observed at low electrical injection, and could be tuned from the bandgap to half-the-bandgap (900–1,600 nm by changing the electrical injection. The first GaAs deep-center laser was demonstrated with electrical injection, and exhibited a threshold of less than 27 mA/cm2 in continuous-wave mode at room temperature at the important 1.54 μm fiber-optic wavelength. This small injection for laser action was explained by fast depopulation of the lower state of the optical transition (fast capture of free holes onto deep-centers, which maintains the population inversion. The evidence for laser action included: superlinear L-I curve, quasi-Fermi level separations satisfying Bernard-Duraffourg’s criterion, optical gains larger than known significant losses, clamping of the optical-emission from lossy modes unable to reach laser action, pinning of the population distribution during laser action.

  12. Greyscale proton beam writing in p-type Gallium Arsenide

    Energy Technology Data Exchange (ETDEWEB)

    Diering, D., E-mail: david.diering@gmx.de [Universität Leipzig, Institute for Experimental Physics II, Division of Nuclear Solid State Physics, Linnéstr. 5, 04103 Leipzig (Germany); Spemann, D., E-mail: spemann@uni-leipzig.de [Universität Leipzig, Institute for Experimental Physics II, Division of Nuclear Solid State Physics, Linnéstr. 5, 04103 Leipzig (Germany); Lenzner, J.; Müller, St.; Böntgen, T.; Wenckstern, H. von [Universität Leipzig, Institute for Experimental Physics II, Semiconductor Physics Group, Linnéstr. 5, 04103 Leipzig (Germany)

    2013-07-01

    Proton beam writing (PBW) is a well known method for micromachining, e.g. of semiconductors. Up to now, only few indication is given on how the resulting structure height in micromachined semiconductors can be controlled by means of fluence variation. This approach for 3D-microstructuring, called Greyscale PBW, was already successfully demonstrated for negative photoresists. In this study (1 0 0) p-type Gallium Arsenide (GaAs) was irradiated with 2.28 MeV protons and fluences in the range from 1.2×10{sup 14} H{sup +} cm{sup −2} to 1.0×10{sup 18} H{sup +} cm{sup −2} at the ion beam laboratory LIPSION and subsequently electrochemically etched with 10%-KOH. A linear dependency of structure height on ion fluence was established. In this way, pyramid-like structures as well as concave-shaped structures could be created. GaAs showed a lateral anisotropic etch behaviour during the development step with preferential etching along the [0 1 1] directions. On some structures the surface roughness and the change of conductivity were investigated by atomic force and scanning capacitance microscopy, respectively. The rms roughness of the surface of the structures was 5.4 nm and 10.6 nm for a fluence of 7.8×10{sup 15} H{sup +} cm{sup −2} and 1.2×10{sup 17} H{sup +} cm{sup −2}, respectively. We observed an increasing etching rate for fluences larger than 10{sup 16} H{sup +} cm{sup −2}.

  13. Indium Phosphide Window Layers for Indium Gallium Arsenide Solar Cells

    Science.gov (United States)

    Jain, Raj K.

    2005-01-01

    Window layers help in reducing the surface recombination at the emitter surface of the solar cells resulting in significant improvement in energy conversion efficiency. Indium gallium arsenide (In(x)Ga(1-x)As) and related materials based solar cells are quite promising for photovoltaic and thermophotovoltaic applications. The flexibility of the change in the bandgap energy and the growth of InGaAs on different substrates make this material very attractive for multi-bandgap energy, multi-junction solar cell approaches. The high efficiency and better radiation performance of the solar cell structures based on InGaAs make them suitable for space power applications. This work investigates the suitability of indium phosphide (InP) window layers for lattice-matched In(0.53)Ga(0.47)As (bandgap energy 0.74 eV) solar cells. We present the first data on the effects of the p-type InP window layer on p-on-n lattice-matched InGaAs solar cells. The modeled quantum efficiency results show a significant improvement in the blue region with the InP window. The bare InGaAs solar cell performance suffers due to high surface recombination velocity (10(exp 7) cm/s). The large band discontinuity at the InP/InGaAs heterojunction offers a great potential barrier to minority carriers. The calculated results demonstrate that the InP window layer effectively passivates the solar cell front surface, hence resulting in reduced surface recombination and therefore, significantly improving the performance of the InGaAs solar cell.

  14. Noble Metal Arsenides and Gold Inclusions in Northwest Africa 8186

    Science.gov (United States)

    Srinivasan, P.; McCubbin, F. M.; Rahman, Z.; Keller, L. P.; Agee, C. B.

    2016-01-01

    CK carbonaceous chondrites are a highly thermally altered group of carbonaceous chondrites, experiencing temperatures ranging between approximately 576-867 degrees Centigrade. Additionally, the mineralogy of the CK chondrites record the highest overall oxygen fugacity of all chondrites, above the fayalite-magnetite-quartz (FMQ) buffer. Me-tallic Fe-Ni is extremely rare in CK chondrites, but magnetite and Fe,Ni sulfides are commonly observed. Noble metal-rich inclusions have previously been found in some magnetite and sulfide grains. These arsenides, tellurides, and sulfides, which contain varying amounts of Pt, Ru, Os, Te, As, Ir, and S, are thought to form either by condensation from a solar gas, or by exsolution during metamorphism on the chondritic parent body. Northwest Africa (NWA) 8186 is a highly metamorphosed CK chondrite. This meteorite is predominately composed of NiO-rich forsteritic olivine (Fo65), with lesser amounts of plagioclase (An52), augite (Fs11Wo49), magnetite (with exsolved titanomagnetite, hercynite, and titanohematite), monosulfide solid solution (with exsolved pentlandite), and the phosphate minerals Cl-apatite and merrillite. This meteorite contains coarse-grained, homogeneous silicates, and has 120-degree triple junctions between mineral phases, which indicates a high degree of thermal metamorphism. The presence of NiO-rich olivine, oxides phases all bearing Fe3 plus, and the absence of metal, are consistent with an oxygen fugacity above the FMQ buffer. We also observed noble metal-rich phases within sulfide grains in NWA 8186, which are the primary focus of the present study.

  15. Solving the Hydration Structure of the Heaviest Actinide Aqua Ion Known: The Californium(III) Case

    Energy Technology Data Exchange (ETDEWEB)

    Den Auwer, Ch.; Guillaumont, D. [CEA Marcoule, Nucl Energy Div, Radiochem Proc Dept, SCPS LILA, 30 (France); Galbis, E.; Pappalardo, Rafael R.; Marcos Sanchez, E. [Univ Seville, Dept Quim Fis, E-41012 Seville (Spain); Hernandez-Cobos, J. [Inst Ciencias Fis, Cuernavaca 62251, Morelos (Mexico); Le Naour, C.; Simoni, E. [Univ Paris Sud, Inst Phys Nucl Orsay, Paris (France)

    2010-07-01

    In summary, the first MC simulation of the trivalent cation of californium, based on an exchangeable hydrated ion-water intermolecular potential, has been shown to extend and improve the hydrated ion model. Likewise, the CfL{sub III}-edge EXAFS spectrum of an acidic 1 mm Cf(ClO{sub 4}){sub 3} aqueous solution recorded under optimized experimental conditions has greatly improved the signal/noise ratio of the only previously recorded spectrum. The comparison of the experimental EXAFS spectrum with the two computed ones, obtained from two different intermolecular potentials that predict eight (BP86) or nine (MP2) water molecules in the first coordination shell, leads to the conclusion that the lowest hydration number is preferred. Then, as Cf{sup III} is the heaviest actinide aqua ion for which there is experimental information, the actinide contraction is supported by the present study. (For U{sup III}, R{sub U-O}=2.56 Angstroms, and CN=9{+-}1; for Pu{sup III}, R{sub Pu-O}=2.51 Angstroms and CN=9{+-}1; for Cm{sup III}, R{sub Cm-O}=2.47 Angstroms and CN=9{+-}1). The role of the second hydration shell is important in defining the structure and dynamics of the Cf{sup III} aqua ion, but the contribution of second-shell water molecules to the EXAFS signal as back-scatters is marginal. Finally, this work gives an illustrative example of the benefits which can be achieved from the combination of experimental X-ray absorption spectroscopy and computer simulations. The usefulness of the simultaneous analysis of the results as well as the importance of the structural statistical average has been clearly demonstrated herein. Each technique independently was not adequate. We believe that this study traces out a still poorly explored combined methodology which may be extremely useful for many other complexes and chemical problems. A systematic theoretical and experimental examination of the other known actinide cations on the same basis should be undertaken to confirm the

  16. Spontaneous atomic ordering in MOVPE grown gallium arsenide antimonide

    Science.gov (United States)

    Jiang, Weiyang

    process. It is unlikely that the ordering mechanism is similar to the dimer-induced strain models that have been successfully used to explain CuPt ordering in InGaP. We propose a simple model based on alternating incorporation of group V adatoms at step edges. Keywords. GaAsSb; MOVPE; Bi surfactant; TEM; CuAu ordering. Subject. Gallium Arsenide Antimonide; Metalorganic Vapor-phase Epitaxy; Bismuth Surfactant; Transmission Electron Microscopy; CuAu Ordering.

  17. Gallium arsenide integrated optical devices for high-speed diagnostic systems

    International Nuclear Information System (INIS)

    The design, fabrication, and evaluation of waveguide electro-optic modulators in gallium arsenide for application to high-speed diagnostic systems are discussed specifically. This paper is focused on high bandwidth, single event analog modulation, and radiation susceptibility of these devices

  18. Light transport through disordered layers of dense gallium arsenide submicron particles

    NARCIS (Netherlands)

    Van der Beek, T.; Barthelemy, P.J.C.; Johnson, P.M.; Wiersma, D.S.; Lagendijk, A.

    2012-01-01

    We present a study of optical transport properties of powder layers with submicrometer, strongly scattering gallium arsenide (GaAs) particles. Uniform, thin samples with well controlled thicknesses were created through the use of varying grinding times, sedimentation fractionation, annealing, and a

  19. Design, construction, and characterization of a facility for neutron capture gamma ray analysis of sulfur in coal using californium-252

    International Nuclear Information System (INIS)

    A study of neutron capture gamma ray analysis of sulfur in coal using californium-252 as a neutron source is reported. Both internal and external target geometries are investigated. The facility designed for and used in this study is described. The external target geometry is found to be inappropriate because of the low thermal neutron flux at the sample location, which must be outside the biological shielding. The internal target geometry is found to have a sufficient thermal neutron flux, but an excessive gamma ray background. A water filled plastic facility, rather than the paraffin filled steel one used in this study, is suggested as a means of increasing flexibility and decreasing the beackground in the internal target geometry

  20. Biological availability of nickel arsenides: toxic effects of particulate Ni/sub 5/As/sub 2/

    Energy Technology Data Exchange (ETDEWEB)

    Gurley, L.R.; Tobey, R.A.; Valdez, J.G.; Halleck, M.S.; Barham, S.S.

    1981-01-01

    Considerations of (1) oil shale retort operating conditions, (2) oil shale elemental composition, (3) nickel and arsenic physico-chemical properties, and (4) oil shale matrix structure lead to the suggestion that nickel arsenides may be formed during the oil shale retorting process. The biological effects of nickel arsenides have not been previously studied. However, similarities between nickel subarsenide and nickel subsulfide and nickel subselenimide, both of which are known potent carcinogens, have caused concern that nickel arsenides may have adverse effects on biological systems. To determine if fugitive nickel arsenides from an oil shale retort could pose a threat to personnel in the workplace or to other living organisms in the environment, a program to study the toxicity of nickel arsenides has been initiated. Five stable nickel arsenides (Ni/sub 5/As/sub 2/, Ni/sub 2/As, Ni/sub 11/As/sub 8/, NiAs, and NiAs/sub 2/) and nickel arsenic sulfide (NiAsS) are considered possible species for study.

  1. First-Principles Determination of Ultrahigh Thermal Conductivity of Boron Arsenide: A Competitor for Diamond?

    Science.gov (United States)

    Lindsay, L.; Broido, D. A.; Reinecke, T. L.

    2013-07-01

    We have calculated the thermal conductivities (κ) of cubic III-V boron compounds using a predictive first principles approach. Boron arsenide is found to have a remarkable room temperature κ over 2000Wm-1K-1; this is comparable to those in diamond and graphite, which are the highest bulk values known. We trace this behavior in boron arsenide to an interplay of certain basic vibrational properties that lie outside of the conventional guidelines in searching for high κ materials, and to relatively weak phonon-isotope scattering. We also find that cubic boron nitride and boron antimonide will have high κ with isotopic purification. This work provides new insight into the nature of thermal transport at a quantitative level and predicts a new ultrahigh κ material of potential interest for passive cooling applications.

  2. Suppression of decoherence in gallium arsenide multiple quantum wells by means of bang-bang control

    Energy Technology Data Exchange (ETDEWEB)

    Takasago, K. [Department of Physics, Tokyo Institute of Technology, Meguro-ku, Tokyo 152-8551 (Japan)], E-mail: takasago.k.aa@m.titech.ac.jp; Ogawa, Y.; Minami, F. [Department of Physics, Tokyo Institute of Technology, Meguro-ku, Tokyo 152-8551 (Japan)

    2008-05-15

    We performed a three-pulse six-wave mixing (SWM) measurement on a gallium arsenide (GaAs) multiple quantum well and observed the time-resolved SWM signal using the heterodyne detection technique. The second pulse acts as a {pi} pulse that reverses the time evolution of the non-Markovian dynamics. By changing the pulse interval conditions, we confirmed the suppression of exciton decoherence by {pi} pulse irradiation (bang-bang control)

  3. Operational experience with the Argonne National Laboratory Californium Rare Ion Breeder Upgrade facility and electron cyclotron resonance charge breeder

    Science.gov (United States)

    Vondrasek, R.; Clark, J.; Levand, A.; Palchan, T.; Pardo, R.; Savard, G.; Scott, R.

    2014-02-01

    The Californium Rare Ion Breeder Upgrade (CARIBU) of the Argonne National Laboratory Argonne Tandem Linac Accelerator System (ATLAS) facility provides low-energy and accelerated neutron-rich radioactive beams to address key nuclear physics and astrophysics questions. A 350 mCi 252Cf source produces fission fragments which are thermalized and collected by a helium gas catcher into a low-energy particle beam with a charge of 1+ or 2+. An electron cyclotron resonance (ECR) ion source functions as a charge breeder in order to raise the ion charge sufficiently for acceleration in the ATLAS linac. The ECR charge breeder has achieved stable beam charge breeding efficiencies of 10.1% for 23Na7+, 17.9% for 39K10+, 15.6% for 84Kr17+, and 12.4% for 133Cs27+. For the radioactive beams, a charge breeding efficiency of 11.7% has been achieved for 143Cs27+ and 14.7% for 143Ba27+. The typical breeding times are 10 ms/charge state, but the source can be tuned such that this value increases to 100 ms/charge state with the best breeding efficiency corresponding to the longest breeding times—the variation of efficiencies with breeding time will be discussed. Efforts have been made to characterize and reduce the background contaminants present in the ion beam through judicious choice of q/m combinations. Methods of background reduction are being investigated based upon plasma chamber cleaning and vacuum practices.

  4. Long-term effects of an intracavitary treatment with californium-252 on normal tissue. [Swine, /sup 226/Ra

    Energy Technology Data Exchange (ETDEWEB)

    Sullivan, M.F.; Beamer, J.L.; Mahony, T.D.; Cross, F.T.; Lund, J.E.; Endres, G.W.R.

    1976-01-01

    About one hundred fifty swine were exposed to either radium-226 or californium-252 sources in the uterine cervix to determine an RBE for both acute and long-term effects. That value for early changes in the tissues at risk in the treatment of cervical cancer was between 6.2 and 6.8. The incidence of complications increased with time after exposure, especially among animals treated with /sup 252/Cf. Analysis of rectal injury showed that ulceration occurred frequently within a year postexposure at doses between 1600 and 2400 rad calculated at 2 cm lateral to the source midline. Fat necrosis and smooth muscle atrophy, resulting in a local rectal stricture, were delayed changes observed in some animals. The lower ureter was the site for a greater frequency of complications than the GI tract. Ureteral stricture often occurred at doses of 1200 rad from /sup 252/Cf and 7000 rad from /sup 226/Ra. Observation of delayed effects in the uterine-cervix in animals held up to 4 years postexposure indicate that the RBE for /sup 252/Cf may be increased to a value as high as 18, while repair may have even decreased it to about 5.6 in the rectum. Fifty swine are still being observed for long-term effects after doses above 800 rad from /sup 252/Cf and 5000 rad from /sup 226/Ra.

  5. Design of Indium Arsenide nanowire sensors for pH and biological sensing and low temperature transport through p-doped Indium Arsenide nanowires

    DEFF Research Database (Denmark)

    Upadhyay, Shivendra

    H sensing, we apply the same to a more complex system - proteins. The sensing protocol involves the functionalization of the sensor surface with a receptor protein followed by the addition of the protein of interest. Sensor response to oppositely charged proteins is used to confirm the sensitivity of the......With the goal of real time electrical detection of chemical and biological species, nanowires have shown great promise with high sensitivity due to their large surface to volume ratio. While the focus of such electrical detection has shifted to one dimensional semiconductor nanostuctures, Silicon...... remains the primary material of choice. This research is about investigating Indium Arsenide nanowires as alternative platform for sensing charged species - chemical and biological, in solution. Starting with nanowires grown via molecular beam epitaxy in an ultra-high vacuum chamber, we discuss the...

  6. Results with the electron cyclotron resonance charge breeder for the 252Cf fission source project (Californium Rare Ion Breeder Upgrade) at Argonne Tandem Linac Accelerator System

    International Nuclear Information System (INIS)

    The construction of the Californium Rare Ion Breeder Upgrade, a new radioactive beam facility for the Argonne Tandem Linac Accelerator System (ATLAS), is nearing completion. The facility will use fission fragments from a 1 Ci 252Cf source; thermalized and collected into a low-energy particle beam by a helium gas catcher. In order to reaccelerate these beams, an existing ATLAS electron cyclotron resonance (ECR) ion source was redesigned to function as an ECR charge breeder. Thus far, the charge breeder has been tested with stable beams of rubidium and cesium achieving charge breeding efficiencies of 9.7% into 85Rb17+ and 2.9% into 133Cs20+.

  7. The metabolism of inorganic arsenic oxides, gallium arsenide, and arsine: a toxicochemical review

    International Nuclear Information System (INIS)

    The aim of this review is to compare the metabolism, chemistry, and biological effects to determine if either of the industrial arsenicals (arsine and gallium arsenide) act like the environmental arsenic oxides (arsenite and arsenate). The metabolism of the arsenic oxides has been extensively investigated in the past 4 years and the differences between the arsenic metabolites in the oxidation states +III versus +V and with one or two methyl groups added have shown increased importance. The arsenic oxide metabolism has been compared with arsine (oxidation state -III) and arsenide (oxidation state between 0 to -III). The different metabolites appear to have different strengths of reaction for binding aresenic (III) to thiol groups, their oxidation-reduction reactions and their forming an arsenic-carbon bond. It is unclear if the differences in parameters such as the presence or absence of methyl metabolities, the rates of AsV reduction compared to the rates of AsIII oxidation, or the competition of phosphate and arsenate for cellular uptake are large enough to change biological effects. The arsine rate of decomposition, products of metabolism, target organ of toxic action, and protein binding appeared to support an oxidized arsenic metabolite. This arsine metabolite was very different from anything made by the arsenic oxides. The gallium arsenide had a lower solubility than any other arsenic compound and it had a disproportionate intensity of lung damage to suggest that the GaAs had a site of contact interaction and that oxidation reactions were important in its toxicity. The urinary metabolites after GaAs exposure were the same as excreted by arsenic oxides but the chemical compounds responsible for the toxic effects of GaAs are different from the aresnic oxides. The review concludes that there is insufficient evidence to equate the different arsenic compounds. There are several differences in the toxicity of the arsenic compounds that will require substantial

  8. Indium arsenide nanowire field-effect transistors for pH and biological sensing

    International Nuclear Information System (INIS)

    Indium Arsenide is a high mobility semiconductor with a surface electron accumulation layer that allows ohmic electrical contact to metals. Here, we present nanowire devices based on this material as a platform for chemical and biological sensing. The sensing principle involves the binding of a charged species at the sensor surface transduced via field effect into a change in current flowing through the sensor. We show the sensitivity of the platform to the H+ ion concentration in solution as proof of principle and demonstrate the sensitivity to larger charged protein species. The sensors are highly reproducible and reach a detection limit of 10 pM for Avidin.

  9. Growth of Gold-assisted Gallium Arsenide Nanowires on Silicon Substrates via Molecular Beam Epitaxy

    Directory of Open Access Journals (Sweden)

    Ramon M. delos Santos

    2008-06-01

    Full Text Available Gallium arsenide nanowires were grown on silicon (100 substrates by what is called the vapor-liquid-solid (VLS growth mechanism using a molecular beam epitaxy (MBE system. Good quality nanowires with surface density of approximately 108 nanowires per square centimeter were produced by utilizing gold nanoparticles, with density of 1011 nanoparticles per square centimeter, as catalysts for nanowire growth. X-ray diffraction measurements, scanning electron microscopy, transmission electron microscopy and Raman spectroscopy revealed that the nanowires are epitaxially grown on the silicon substrates, are oriented along the [111] direction and have cubic zincblende structure.

  10. An examination of the reactive sputtering of silicon nitride on to gallium arsenide

    International Nuclear Information System (INIS)

    The deposition of silicon nitride thin films by the reactive sputtering of elemental silicon in a nitrogen/argon plasma has been investigated. The composition of the films has been examined using infra-red reflectance, X-ray photoelectron and Auger electron spectroscopies and spark source mass spectrometry. Oxygen has been found to be a major contaminant in these sputter deposited films, the oxygen concentration depending on the ambient gas pressure. The use of the silicon oxy-nitride films as annealing encapsulants for the activation of silicon ion implanted semi-insulating gallium arsenide has also been investigated. (author)

  11. Ab initio full-potential study of mechanical properties and magnetic phase stability of californium monopnictides (CfN and CfP)

    Science.gov (United States)

    Amari, S.; Bouhafs, B.

    2016-09-01

    Based on the first-principles methods, the structural, elastic, electronic, properties and magnetic ordering of californium monopnictides CfX (X = P) have been studied using the full-potential augmented plane wave plus local orbitals (FP-L/APW + lo) method within the framework of density functional theory (DFT). The electronic exchange correlation energy is described by generalized gradient approximation GGA and GGA+U (U is the Hubbard correction). The GGA+U method is applied to the rare-earth 5f states. We have calculated the lattice parameters, bulk modulii and the first pressure derivatives of the bulk modulii. The elastic properties of the studied compounds are only investigated in the most stable calculated phase. In order to gain further information, we have calculated Young's modulus, shear modulus, anisotropy factor and Kleinman parameter by the aid of the calculated elastic constants. The results mainly show that californium monopnictides CfX (X = P) have an antiferromagnetic spin ordering. Density of states (DOS) and charge densities for both compounds are also computed in the NaCl (B1) structure.

  12. Ab initio study of the unusual thermal transport properties of boron arsenide and related materials

    Science.gov (United States)

    Broido, D. A.; Lindsay, L.; Reinecke, T. L.

    2013-12-01

    Recently, using a first principles approach, we predicted that zinc blende boron arsenide (BAs) will have an ultrahigh lattice thermal conductivity, κ, of over 2000 Wm-1K-1 at room temperature (RT), comparable to that of diamond. Here, we provide a detailed ab initio examination of phonon thermal transport in boron arsenide, contrasting its unconventional behavior with that of other related materials, including the zinc blende crystals boron nitride (BN), boron phosphide, boron antimonide, and gallium nitride (GaN). The unusual vibrational properties of BAs contribute to its weak phonon-phonon scattering and phonon-isotope scattering, which are responsible for its exceptionally high κ. The thermal conductivity of BAs has contributions from phonons with anomalously large mean free paths (˜2 μm), two to three times those of diamond and BN. This makes κ in BAs sensitive to phonon scattering from crystal boundaries. An order of magnitude smaller RT thermal conductivity in a similar material, zinc blende GaN, is connected to more separated acoustic phonon branches, larger anharmonic force constants, and a large isotope mixture on the heavy rather than the light constituent atom. The striking difference in κ for BAs and GaN demonstrates the importance of using a microscopic first principles thermal transport approach for calculating κ. BAs also has an advantageous RT coefficient of thermal expansion, which, combined with the high κ value, suggests that it is a promising material for use in thermal management applications.

  13. THE QUANTUM-WELL STRUCTURES OF SELF ELECTROOPTIC-EFFECT DEVICES AND GALLIUM-ARSENIDE

    Directory of Open Access Journals (Sweden)

    Mustafa TEMİZ

    1996-02-01

    Full Text Available Multiple quantum-well (MQW electroabsorptive self electro optic-effect devices (SEEDs are being extensively studied for use in optical switching and computing. The self electro-optic-effect devices which has quantum-well structures is a new optoelectronic technology with capability to obtain both optical inputs and outputs for Gallium-Arsenide/Aluminum Gallium-Arsenide (GaAs/AlGaAs electronic circuits. The optical inputs and outputs are based on quantum-well absorptive properties. These quantum-well structures consist of many thin layers of semiconductors materials of GaAs/AlGaAs which have emerged some important directions recently. The most important advance in the physics of these materials since the early days has been invention of the heterojunction structures which is based at present on GaAs technology. GaAs/AlGaAs structures present some important advantages to relevant band gap and index of refraction which allow to form the quantum-well structures and also to make semiconductor lasers, dedectors and waveguide optical switches.

  14. Optimal power settings of aluminum gallium arsenide lasers in caries inhibition — An in vitro study

    Science.gov (United States)

    Sharma, Sonali; Hegde, Mithra N; Sadananda, Vandana; Mathews, Blessen

    2016-01-01

    Context: Incipient carious lesions are characterized by subsurface dissolution due to more fluoride ions in the 50-100 microns of the tooth's outer surface. Aims: To determine an optimal power setting for 810 nm aluminum gallium arsenide laser for caries inhibition. Materials and Methods: Fifty-four caries-free extracted teeth were sectioned mesiodistally. The samples were divided into 18 groups for each power setting being evaluated. Each group had six samples. The laser used is 810 nm aluminum gallium arsenide laser with power setting from 0.1 watts to 5 watts. Laser fluorescence based device was used to evaluate the effect of irradiation. Statistical Analysis Used: Paired “t” test, one-way analysis of variance (ANOVA), Tukey's post hoc test, and the Pearson's correlation test. Results: The paired t-test showed that there is minimum divergence from the control for 3.5 watts. Tukey's post hoc test also showed statistically significantly results for 3.5 watts. The Pearson's correlation test showed that there was negative correlation between the watts and irradiation. Conclusions: The power setting that gave statistically significant results was 3.5 watts. PMID:27099427

  15. NMR studies on the new iron arsenide superconductors including the superconducting state

    International Nuclear Information System (INIS)

    We summarize our Nuclear Magnetic Resonance (NMR) and Nuclear Quadrupole Resonance (NQR) results on the new iron arsenide superconductor LaO1-xFxFeAs in the normal state, and show new NMR data in the superconducting state. Beyond early evidence of nodes and spin-singlet pairing[2], we find evidence of a deviation of the T3 behaviour of the spin lattice relaxation rate, 1/T1, at temperatures significantly below Tc, which would agree with the suggested extended s-wave symmetry. The deviation of the T3 behaviour is induced by the pair breaking effect of impurities. Different amounts of impurities would lead to different temperature dependences of 1/T1, which would allow to differentiate between d-wave and extended s-wave symmetries.

  16. Electronic structure, magnetic and superconducting properties of co-doped iron-arsenide superconductors

    Energy Technology Data Exchange (ETDEWEB)

    Rosner, Helge; Schnelle, Walter; Nicklas, Michael; Leithe-Jasper, Andreas [MPI CPfS Dresden (Germany); Weikert, Franziska [Los Alamos National Laboratory, New Mexico (United States); HLD Dresden Rossendorf (Germany); Wosnitza, Joachim [HLD Dresden Rossendorf (Germany)

    2013-07-01

    We present a joint experimental and theoretical study of co-doped iron-arsenide superconductors of the 122 family A{sub 1-x}K{sub x}Fe{sub 2-y}T{sub y}As{sub 2} (A = Ba,Sr,Eu; T = Co,Ru,Rh). In these systems, the co-doping enables the separation of different parameters - like electron count, disorder or the specific geometry of the FeAs layer - with respect to the position of the respective compounds in the general 122 phase diagram. For a series of compounds, we investigate the relevance of the different parameters for the magnetic, thermodynamic and superconducting properties. Our experimental investigations are supported by density functional electronic structure calculations applying different approximations for doping and disorder.

  17. Gallium arsenide quantum well-based far infrared array radiometric imager

    Science.gov (United States)

    Forrest, Kathrine A.; Jhabvala, Murzy D.

    1991-01-01

    We have built an array-based camera (FIRARI) for thermal imaging (lambda = 8 to 12 microns). FIRARI uses a square format 128 by 128 element array of aluminum gallium arsenide quantum well detectors that are indium bump bonded to a high capacity silicon multiplexer. The quantum well detectors offer good responsivity along with high response and noise uniformity, resulting in excellent thermal images without compensation for variation in pixel response. A noise equivalent temperature difference of 0.02 K at a scene temperature of 290 K was achieved with the array operating at 60 K. FIRARI demonstrated that AlGaAS quantum well detector technology can provide large format arrays with performance superior to mercury cadmium telluride at far less cost.

  18. Methods for forming group III-V arsenide-nitride semiconductor materials

    Science.gov (United States)

    Major, Jo S. (Inventor); Welch, David F. (Inventor); Scifres, Donald R. (Inventor)

    2000-01-01

    Methods are disclosed for forming Group III--arsenide-nitride semiconductor materials. Group III elements are combined with group V elements, including at least nitrogen and arsenic, in concentrations chosen to lattice match commercially available crystalline substrates. Epitaxial growth of these III-V crystals results in direct bandgap materials, which can be used in applications such as light emitting diodes and lasers. Varying the concentrations of the elements in the III-V crystals varies the bandgaps, such that materials emitting light spanning the visible spectra, as well as mid-IR and near-UV emitters, can be created. Conversely, such material can be used to create devices that acquire light and convert the light to electricity, for applications such as full color photodetectors and solar energy collectors. The growth of the III-V crystals can be accomplished by growing thin layers of elements or compounds in sequences that result in the overall lattice match and bandgap desired.

  19. Ultrafast Relaxation Dynamics of Photo-excited Dirac Fermion in Three Dimensional Dirac Semimetal Cadmium Arsenide

    CERN Document Server

    Lu, Wei; Liu, Xuefeng; Lu, Hong; Li, Caizhen; Lai, Jiawei; Zhao, Chuan; Tian, Ye; Liao, Zhimin; Jia, Shuang; Sun, Dong

    2016-01-01

    Three dimensional (3D) Dirac semimetal exhibiting ultrahigh mobility has recently attracted enormous research interests as 3D analogues of graphene. From the prospects of future application toward electronic/optoelectronic devices with extreme performance, it is crucial to understand the relaxation dynamics of photo-excited carriers and their coupling with lattice. In this work, we report ultrafast transient reflection measurements of photo-excited carrier dynamics in cadmium arsenide (Cd3As2), which is among the most stable Dirac semimetals that have been confirmed experimentally. With low energy probe photon of 0.3 eV, photo-excited Dirac Fermions dynamics closing to Dirac point are probed. Through transient reflection measurements on bulk and nanoplate samples that have different doping intensities, and systematic probe wavelength, pump power and lattice temperature dependent measurements, the dynamical evolution of carrier distributions can be retrieved qualitatively using a two-temperature model. The pho...

  20. Quantum oscillations in the parent magnetic phase of an iron arsenide high temperature superconductor.

    Energy Technology Data Exchange (ETDEWEB)

    Sebastian, Suchitra [Cambridge University; Gillett, J [Cambridge University; Harrison, N [Los Alamos National Laboratory (LANL); Lau, P H C [Cambridge University; Singh, David J [ORNL; Mielke, C H [Los Alamos National Laboratory (LANL); Lonzarich, G G [Cambridge University

    2008-01-01

    We report measurements of quantum oscillations in SrFe{sub 2}As{sub 2}--which is an antiferromagnetic parent of the iron arsenide family of superconductors--known to become superconducting under doping and the application of pressure. The magnetic field and temperature dependences of the oscillations between 20 and 55 T in the liquid helium temperature range suggest that the electronic excitations are those of a Fermi liquid. We show that the observed Fermi surface comprising small pockets is consistent with the formation of a spin-density wave. Our measurements thus demonstrate that high T{sub c} superconductivity can occur on doping or pressurizing a conventional metallic spin-density wave state.

  1. Quantum oscillations in the parent magnetic phase of an iron arsenide high temperature superconductor

    Energy Technology Data Exchange (ETDEWEB)

    Sebastian, Suchitra E; Gillett, J; Lau, P H C; Lonzarich, G G [Cavendish Laboratory, Cambridge University, J J Thomson Avenue, Cambridge CB3 OHE (United Kingdom); Harrison, N; Mielke, C H [NHMFL, Los Alamos National Laboratory, MS E536, Los Alamos, NM 87545 (United States); Singh, D J [Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States)], E-mail: suchitra@phy.cam.ac.uk

    2008-10-22

    We report measurements of quantum oscillations in SrFe{sub 2}As{sub 2}-which is an antiferromagnetic parent of the iron arsenide family of superconductors-known to become superconducting under doping and the application of pressure. The magnetic field and temperature dependences of the oscillations between 20 and 55 T in the liquid helium temperature range suggest that the electronic excitations are those of a Fermi liquid. We show that the observed Fermi surface comprising small pockets is consistent with the formation of a spin-density wave. Our measurements thus demonstrate that high T{sub c} superconductivity can occur on doping or pressurizing a conventional metallic spin-density wave state. (fast track communication)

  2. Development of a dome Fresnel lens/gallium arsenide photovoltaic concentrator for space applications

    Science.gov (United States)

    O'Neill, Mark J.; Piszczor, Michael F.

    1987-01-01

    A novel photovoltaic concentrator system is currently being developed. Phase I of the program, completed in late 1986, produced a conceptual design for the concentrator system, including an array weight and performance estimates based on optical, electrical, and thermal analyses. Phase II of the program, just underway, concerns the fabrication and testing of prototype concentrator panels of the design. The concentrator system uses dome Fresnel lenses for optical concentration; gallium arsenide concentrator cells for power generation; prismatic cell covers to eliminate gridline obscuration losses; a backplane radiator for heat rejection; and a honeycomb structure for the deployable panel assembly. The conceptual design of the system, its anticipated performance, and its estimated weight are reported.

  3. Electronic structure, magnetic and superconducting properties of co-doped iron-arsenide superconductors

    International Nuclear Information System (INIS)

    We present a joint experimental and theoretical study of co-doped iron-arsenide superconductors of the 122 family A1-xKxFe2-yTyAs2 (A = Ba,Sr,Eu; T = Co,Ru,Rh). In these systems, the co-doping enables the separation of different parameters - like electron count, disorder or the specific geometry of the FeAs layer - with respect to the position of the respective compounds in the general 122 phase diagram. For a series of compounds, we investigate the relevance of the different parameters for the magnetic, thermodynamic and superconducting properties. Our experimental investigations are supported by density functional electronic structure calculations applying different approximations for doping and disorder.

  4. Outdoor Performance of a Thin-Film Gallium-Arsenide Photovoltaic Module

    Energy Technology Data Exchange (ETDEWEB)

    Silverman, T. J.; Deceglie, M. G.; Marion, B.; Cowley, S.; Kayes, B.; Kurtz, S.

    2013-06-01

    We deployed a 855 cm2 thin-film, single-junction gallium arsenide (GaAs) photovoltaic (PV) module outdoors. Due to its fundamentally different cell technology compared to silicon (Si), the module responds differently to outdoor conditions. On average during the test, the GaAs module produced more power when its temperature was higher. We show that its maximum-power temperature coefficient, while actually negative, is several times smaller in magnitude than that of a Si module used for comparison. The positive correlation of power with temperature in GaAs is due to temperature-correlated changes in the incident spectrum. We show that a simple correction based on precipitable water vapor (PWV) brings the photocurrent temperature coefficient into agreement with that measured by other methods and predicted by theory. The low operating temperature and small temperature coefficient of GaAs give it an energy production advantage in warm weather.

  5. Structure and electrical characterization of gallium arsenide nanowires with different V/III ratio growth parameters

    Energy Technology Data Exchange (ETDEWEB)

    Muhammad, R.; Ahamad, R. [Sustainability Research Alliance, Universiti Teknologi Malaysia, 81310 Skudai, Johor (Malaysia); Ibrahim, Z.; Othaman, Z. [Physic Department, Faculty of Science, Universiti Teknologi Malaysia, 81310 Skudai, Johor (Malaysia)

    2014-03-05

    Gallium arsenide (GaAs) nanowires were grown vertically on GaAs(111)B substrate by gold-assisted using metal-organic chemical vapour deposition. Field-emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM) and conductivity atomic force microscopy (CAFM) analysis were carried out to investigate the effects of V/III ratio on structural properties and current-voltage changes in the wires. Results show that GaAs NWs grow preferably in the wurtzite crystal structure than zinc blende crystal structure with increasing V/III ratio. Additionally, CAFM studies have revealed that zincblende nanowires indicate ohmic characteristic compared to oscillation current occurred for wurtzite structures. The GaAs NWs with high quality structures are needed in solar cells technology for trapping energy that directly converts of sunlight into electricity with maximum capacity.

  6. Ultrafast photocurrents and terahertz radiation in gallium arsenide and carbon based nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Prechtel, Hans Leonhard

    2011-08-15

    In this thesis we developed a measurement technique based on a common pump-probe scheme and coplanar stripline circuits that enables time-resolved photocurrent measurements of contacted nanosystems with a micrometer spatial and a picosecond time resolution. The measurement technique was applied to lowtemperature grown gallium arsenide (LT-GaAs), carbon nanotubes (CNTs), graphene, and p-doped gallium arsenide (GaAs) nanowires. The various mechanisms responsible for the generation of current pulses by pulsed laser excitation were reviewed. Furthermore the propagation of the resulting electromagnetic radiation along a coplanar stripline circuit was theoretically and numerically treated. The ultrafast photocurrent response of low-temperature grown GaAs was investigated. We found two photocurrent pulses in the time-resolved response. We showed that the first pulse is consistent with a displacement current pulse. We interpreted the second pulse to result from a transport current process. We further determined the velocity of the photo-generated charge carriers to exceed the drift, thermal and quantum velocities of single charge carriers. Hereby, we interpreted the transport current pulse to stem from an electron-hole plasma excitation. We demonstrated that the photocurrent response of CNTs comprises an ultrafast displacement current and a transport current. The data suggested that the photocurrent is finally terminated by the recombination lifetime of the charge carriers. To the best of our knowledge, we presented in this thesis the first recombination lifetime measurements of contacted, suspended, CVD grown CNT networks. In addition, we studied the ultrafast photocurrent dynamics of freely suspended graphene contacted by metal electrodes. At the graphene-metal interface, we demonstrated that built-in electric fields give rise to a photocurrent with a full-width-half-maximum of a few picoseconds and that a photo-thermoelectric effect generates a current with a decay time

  7. Thermal conductivity and Seebeck coefficients of icosahedral boron arsenide films on silicon carbide

    International Nuclear Information System (INIS)

    The thermal conductivity of icosahedral boron arsenide (B12As2) films grown on (0001) 6H-SiC substrates by chemical vapor deposition was studied by the 3ω technique. The room temperature thermal conductivity decreased from 27.0 to 15.3 W/m K as the growth temperature was decreased from 1450 to 1275 deg. C. This is mainly attributed to the differences in the impurity concentration and microstructure, determined from secondary ion mass spectrometry and high resolution transmission electron microscopy, respectively. Callaway's theory was applied to calculate the temperature-dependent thermal conductivity, and the results are in good agreement with the experimental data. Seebeck coefficients were determined as 107 μV/K and 136 μV/K for samples grown at 1350 deg. C with AsH3/B2H6 flow ratio equals to 1:1 and 3:5, respectively.

  8. Anatomy of a controversy: Application of the Langevin technique to the analysis of the Californium-252 Source-Driven Noise Analysis method for subcriticality determination

    International Nuclear Information System (INIS)

    The expressions for the power spectral density of the noise equivalent sources have been calculated explicitly for the (a) stochastic transport equation, (b) the one-speed transport equaton, (c) the one-speed P1 equations, (d) the one-speed diffusion equation and (e) the point kinetic equation. The stochastic nature of Fick's law in (d) has been emphasized. The Langevin technique has been applied at various levels of approximation to the interpretation of the Californium-252 Source-Driven Noise Analysis (CSDNA) experiment for determining the reactivity in subcritical media. The origin of the controversy surrounding this method has been explained. The foundations of the CSDNA method as a viable experimental technique to infer subcriticality from a measured ratio of power spectral densities of the outputs of two neutron detectors and a third external source detector has been examined by solving the one-speed stochastic diffusion equation for a point external Californium-252 source and two detectors in an infinite medium. The expression relating reactivity to the measured ratio of PSDs was found to depend implicitly on k itself. Through a numerical analysis fo this expression, the authors have demonstrated that for a colinear detector-source-detector configuration for neutron detectors far from the source, the expression for the subcritical multiplication factor becomes essentially insensitive to k, hence, demonstrating some possibility for the viability of this technique. However, under more realistic experimental conditions, i.e., for finite systems in which diffusion theroy is not applicable, the measurement of the subcritical multiplication factor from a single measured ratio of PSDs, without extensive transport calculations, remains doubtful

  9. Application of SCGE assay, classical cytogenetics and FISH for studying in vitro californium-252 neutrons irradiations and BSH pretreatment on human lymphocytes

    International Nuclear Information System (INIS)

    Recently, there has been observed a tendency to apply various energy neutrons for tumor therapy and particularly low energy neutrons from various sources, including californium-252 source, for cancer radiotherapy based on the neutron capture. In this study peripheral blood lymphocytes were used as a model for human cells and three methods were applied to assess the effectiveness of californium-252 neutrons irradiations in vitro in normal cells or pre-treated with compound enriched in B-10 ion. Human blood samples or isolated lymphocytes were irradiated with neutrons from isotopic 252Cf source at the Faculty of Nuclear Physics and Technics at University of Mining and Metallurgy (both neutron source and samples were placed in polyethylene block). Chemical pretreatment with BSH (Na210B12H11SH) was done to introduce boron-10 ion into cells in order to check any enhancement effect due to the process of boron neutron capture. Comet assay was done to investigate the DNA damage. Classical cytogenetics was applied to assess the frequencies of unstable aberrations (dicentrics and rings). Fluorescence in situ hybridization (FISH) with probes for chromosomes 1, 4 (14.3% of whole genome) and pancentromeric probe was performed to evaluate the frequencies of stable aberrations. Linear (or close to linear) increase of DNA damage and aberration frequency was observed with dose of radiation both for lymphocytes untreated or pre-treated with BSH. Very little differences (statistically insignificant) due to radiation dose and BSH pretreatment were observed in the frequencies of SCEs detected in the second mitosis. There is no significant difference between boron pre-treated and not treated cells, and even slightly higher effects were observed in case of the highest dose without BSH pretreatment. The level of translocations observed is comparable with the frequencies of dicentrics and rings. (author)

  10. In-Plane Electronic Anisotropy of Underdoped ___122___ Fe-Arsenide Superconductors Revealed by Measurements of Detwinned Single Crystals

    Energy Technology Data Exchange (ETDEWEB)

    Fisher, Ian Randal

    2012-05-08

    The parent phases of the Fe-arsenide superconductors harbor an antiferromagnetic ground state. Significantly, the Neel transition is either preceded or accompanied by a structural transition that breaks the four fold symmetry of the high-temperature lattice. Borrowing language from the field of soft condensed matter physics, this broken discrete rotational symmetry is widely referred to as an Ising nematic phase transition. Understanding the origin of this effect is a key component of a complete theoretical description of the occurrence of superconductivity in this family of compounds, motivating both theoretical and experimental investigation of the nematic transition and the associated in-plane anisotropy. Here we review recent experimental progress in determining the intrinsic in-plane electronic anisotropy as revealed by resistivity, reflectivity and ARPES measurements of detwinned single crystals of underdoped Fe arsenide superconductors in the '122' family of compounds.

  11. Californium-252 neutron sources

    International Nuclear Information System (INIS)

    Major production programs for the Savannah River reactors and the High Flux Isotopes Reactor at Oak Ridge have made 252Cf one of the most available and, at the USAEC's sales price of $10/μg, one of the least-expensive isotopic neutron sources. Reactor production has totaled approximately 2 g, and, based on expected demand, an additional 10 g will be produced in the next decade. The approximately 800 mg chemically separated to date has been used to prepare over 600 neutron sources. Most, about 500, have been medical sources containing 1 to 5 μg of 252Cf plated in needles for experimental cancer therapy studies. The remainder have generally been point sources containing 10 μg to 12 mg of oxide for activation, well logging, or radiography uses. Bulk sources have also been supplied to the commercial encapsulators. The latest development has been the production of 252Cf cermet wire which can be cut into almost contamination-free lengths of the desired 252Cf content. Casks are available for transport of sources up to 50 mg. Subcritical assemblies have been developed to multiply the source neutrons by a factor of 10 to 40, and collimators and thermalizers have also been extensively developed to shape the neutron flux and energy distributions for special applications. (U.S.)

  12. About some methods of obtaining of cheap gallium arsenide photo converters and solar batteries on their base

    International Nuclear Information System (INIS)

    The article presents the talk on some methods of obtaining cheap gallium arsenide photo-converters and solar batteries on their basis given at the International Workshop on applied solar energy held in Tashkent (Uzbekistan) in June 1997. The technology elaborated permits to obtain solar cells with efficiency of photo-conversion up to 20%. The electrical and photoelectrical properties of obtained cells were investigated. The elaborated solar cells are used in portable devices working in field conditions. (A.A.D.)

  13. Calculations of Nuclear Astrophysics and Californium Fission Neutron Spectrum Averaged Cross Section Uncertainties Using ENDF/B-VII.1, JEFF-3.1.2, JENDL-4.0 and Low-fidelity Covariances

    International Nuclear Information System (INIS)

    Nuclear astrophysics and californium fission neutron spectrum averaged cross sections and their uncertainties for ENDF materials have been calculated. Absolute values were deduced with Maxwellian and Mannhart spectra, while uncertainties are based on ENDF/B-VII.1, JEFF-3.1.2, JENDL-4.0 and Low-Fidelity covariances. These quantities are compared with available data, independent benchmarks, EXFOR library, and analyzed for a wide range of cases. Recommendations for neutron cross section covariances are given and implications are discussed

  14. Thermo-chemical properties and electrical resistivity of Zr-based arsenide chalcogenides

    Directory of Open Access Journals (Sweden)

    A. Schlechte, R. Niewa, M. Schmidt, G. Auffermann, Yu. Prots, W. Schnelle, D. Gnida, T. Cichorek, F. Steglich and R. Kniep

    2007-01-01

    Full Text Available Ternary phases in the systems Zr–As–Se and Zr–As–Te were studied using single crystals of ZrAs1.40(1Se0.50(1 and ZrAs1.60(2Te0.40(1 (PbFCl-type of structure, space group P4/nmm as well as ZrAs0.70(1Se1.30(1 and ZrAs0.75(1Te1.25(1 (NbPS-type of structure, space group Immm. The characterization covers chemical compositions, crystal structures, homogeneity ranges and electrical resistivities. At 1223 K, the Te-containing phases can be described with the general formula ZrAsxTe2−x, with 1.53(1≤x≤1.65(1 (As-rich and 0.58(1≤x≤0.75(1 (Te-rich. Both phases are located directly on the tie-line between ZrAs2 and ZrTe2, with no indication for any deviation. Similar is true for the Se-rich phase ZrAsxSe2−x with 0.70(1≤x≤0.75(1. However, the compositional range of the respective As-rich phase ZrAsx−ySe2−x (0.03(1≤y≤0.10(1; 1.42(1≤x≤1.70(1 is not located on the tie-line ZrAs2–ZrSe2, and exhibits a triangular region of existence with intrinsic deviation of the composition towards lower non-metal contents. Except for ZrAs0.75Se1.25, from the homogeneity range of the Se-rich phase, all compounds under investigation show metallic characteristics of electrical resistivity at temperatures >20 K. Related uranium and thorium arsenide selenides display a typical magnetic field-independent rise of the resistivity towards lower temperatures, which has been explained by a non-magnetic Kondo effect. However, a similar observation has been made for ZrAs1.40Se0.50, which, among the Zr-based arsenide chalcogenides, is the only system with a large concentration of intrinsic defects in the anionic substructure.

  15. Carbon doping of gallium arsenide and reflectance difference spectroscopy of compound semiconductors grown by metalorganic vapor-phase epitaxy

    Science.gov (United States)

    Begarney, Michael John

    The surface structure and chemistry of compound semiconductors used in heterojunction bipolar transistors was investigated. Lattice-matched, single crystal films of gallium arsenide and indium phosphide were deposited by metalorganic vapor-phase epitaxy in a horizontal-flow, quartz reactor. Two areas of the transistor fabrication process were studied: (1) carbon doping of the gallium arsenide base layer using carbon tetrachloride, and (2) in-situ monitoring of the surface reconstructions of gallium arsenide and indium phosphide by reflectance difference spectroscopy for improved heterointerface formation. Carbon tetrachloride was found to effect the growth of gallium arsenide in two ways: (1) reaction of chlorine with adsorbed gallium atoms to produce volatile GaCl, and (2) reaction of chlorine with the GaAs film to produce GaCl3. The latter of these reactions was found to be insignificant below a temperature-dependent threshold ratio of chlorine to gallium. At lower values of this ratio, step bunching and pinning was observed, while at higher values, pits ranging from 20 to 50 nm in diameter resulted. We show that these results arise due to the presence of the c(4 x 4) gallium arsenide reconstruction during crystal growth, and the site-specific adsorption of CCl4 at gallium atom sites, which are present only at step edges for this reconstruction. The relationship between the reflectance difference spectra and the atomic structure of arsenic-rich reconstructions of GaAs (001) were investigated. It was found that a roughening process, involving the desorption of arsenic and outdiffusion of gallium atoms to the surface, takes place as the surface structure changes with decreasing arsenic coverage. We determined that the intensity of the negative peak at 2.8 eV strongly depends on the presence of adsorbed alkyl groups and gallium atoms, while, by contrast, the intensity of the positive peak at 2.9 eV is directly proportional to the density of (2 x 4)-type dimers. We

  16. Structural anomalies in undoped Gallium Arsenide observed in high resolution diffraction imaging with monochromatic synchrotron radiation

    Science.gov (United States)

    Steiner, B.; Kuriyama, M.; Dobbyn, R. C.; Laor, U.; Larson, D.; Brown, M.

    1988-01-01

    Novel, streak-like disruption features restricted to the plane of diffraction have recently been observed in images obtained by synchrotron radiation diffraction from undoped, semi-insulating gallium arsenide crystals. These features were identified as ensembles of very thin platelets or interfaces lying in (110) planes, and a structural model consisting of antiphase domain boundaries was proposed. We report here the other principal features observed in high resolution monochromatic synchrotron radiation diffraction images: (quasi) cellular structure; linear, very low-angle subgrain boundaries in (110) directions, and surface stripes in a (110) direction. In addition, we report systematic differences in the acceptance angle for images involving various diffraction vectors. When these observations are considered together, a unifying picture emerges. The presence of ensembles of thin (110) antiphase platelet regions or boundaries is generally consistent not only with the streak-like diffraction features but with the other features reported here as well. For the formation of such regions we propose two mechanisms, operating in parallel, that appear to be consistent with the various defect features observed by a variety of techniques.

  17. Transport-reaction model for defect and carrier behavior within displacement cascades in gallium arsenide

    Energy Technology Data Exchange (ETDEWEB)

    Wampler, William R. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Myers, Samuel M. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2014-02-01

    A model is presented for recombination of charge carriers at displacement damage in gallium arsenide, which includes clustering of the defects in atomic displacement cascades produced by neutron or ion irradiation. The carrier recombination model is based on an atomistic description of capture and emission of carriers by the defects with time evolution resulting from the migration and reaction of the defects. The physics and equations on which the model is based are presented, along with details of the numerical methods used for their solution. The model uses a continuum description of diffusion, field-drift and reaction of carriers and defects within a representative spherically symmetric cluster. The initial radial defect profiles within the cluster were chosen through pair-correlation-function analysis of the spatial distribution of defects obtained from the binary-collision code MARLOWE, using recoil energies for fission neutrons. Charging of the defects can produce high electric fields within the cluster which may influence transport and reaction of carriers and defects, and which may enhance carrier recombination through band-to-trap tunneling. Properties of the defects are discussed and values for their parameters are given, many of which were obtained from density functional theory. The model provides a basis for predicting the transient response of III-V heterojunction bipolar transistors to pulsed neutron irradiation.

  18. Resonant photo-thermal modification of vertical gallium arsenide nanowires studied using Raman spectroscopy

    Science.gov (United States)

    Walia, Jaspreet; Boulanger, Jonathan; Dhindsa, Navneet; LaPierre, Ray; (Shirley Tang, Xiaowu; Saini, Simarjeet S.

    2016-06-01

    Gallium arsenide nanowires have shown considerable promise for use in applications in which the absorption of light is required. When the nanowires are oriented vertically, a considerable amount of light can be absorbed, leading to significant heating effects. Thus, it is important to understand the threshold power densities that vertical GaAs nanowires can support, and how the nanowire morphology is altered under these conditions. Here, resonant photo-thermal modification of vertical GaAs nanowires was studied using both Raman spectroscopy and electron microscopy techniques. Resonant waveguiding, and subsequent absorption of the excited optical mode reduces the irradiance vertical GaAs nanowires can support relative to horizontal ones, by three orders of magnitude before the onset of structural changes occur. A power density of only 20 W mm‑2 was sufficient to induce local heating in the nanowires, resulting in the formation of arsenic species. Upon further increasing the power, a hollow nanowire morphology was realized. These findings are pertinent to all optical applications and spectroscopic measurements involving vertically oriented GaAs nanowires. Understanding the optical absorption limitations, and the effects of exceeding these limitations will help improve the development of all III–V nanowire devices.

  19. Monopole Charge Domain in High-Gain Gallium Arsenide Photoconductive Switches

    Institute of Scientific and Technical Information of China (English)

    施卫; 陈二柱; 张显斌; 李琦

    2002-01-01

    Considering that semi-insulating gallium arsenide photoconductive switches can be triggered into the high gain mode and no reliable theories can account for the observed transient characteristics, we propose the monopole charge domain model to explain the peculiar switching phenomena occurring in the high gain mode and we discuss the requirements for the lock-on switching. During operation on this mode, the applied field across the switch and the lock-on field are all larger than the Gunn threshold field. Our developed monopole charge domain is based on the transferred-electron effect, but the domain is only composed of large numbers of electrons piled up due to the negative differential mobility. Using the model and taking the physical mechanism of the avalanche impact ionization and recombination radiation into consideration, we interpret the typical phenomena of the lock-on effect, such as the time delay between the beginning of optical illumination and turning-on of the switch, and the conduction mechanism of the sustaining phase. Under different conditions of bias field intensity and incident light energy, the time delay of the switching is calculated. The results show that the physical mechanisms of impact ionization and recombination radiation occurring in the monopole charge domain are responsible for the lock-on switching.

  20. Discovery of a Weyl fermion state with Fermi arcs in niobium arsenide

    Science.gov (United States)

    Xu, Su-Yang; Alidoust, Nasser; Belopolski, Ilya; Yuan, Zhujun; Bian, Guang; Chang, Tay-Rong; Zheng, Hao; Strocov, Vladimir N.; Sanchez, Daniel S.; Chang, Guoqing; Zhang, Chenglong; Mou, Daixiang; Wu, Yun; Huang, Lunan; Lee, Chi-Cheng; Huang, Shin-Ming; Wang, Baokai; Bansil, Arun; Jeng, Horng-Tay; Neupert, Titus; Kaminski, Adam; Lin, Hsin; Jia, Shuang; Zahid Hasan, M.

    2015-09-01

    Three types of fermions play a fundamental role in our understanding of nature: Dirac, Majorana and Weyl. Whereas Dirac fermions have been known for decades, the latter two have not been observed as any fundamental particle in high-energy physics, and have emerged as a much-sought-out treasure in condensed matter physics. A Weyl semimetal is a novel crystal whose low-energy electronic excitations behave as Weyl fermions. It has received worldwide interest and is believed to open the next era of condensed matter physics after graphene and three-dimensional topological insulators. However, experimental research has been held back because Weyl semimetals are extremely rare in nature. Here, we present the experimental discovery of the Weyl semimetal state in an inversion-symmetry-breaking single-crystalline solid, niobium arsenide (NbAs). Utilizing the combination of soft X-ray and ultraviolet photoemission spectroscopy, we systematically study both the surface and bulk electronic structure of NbAs. We experimentally observe both the Weyl cones in the bulk and the Fermi arcs on the surface of this system. Our ARPES data, in agreement with our theoretical band structure calculations, identify the Weyl semimetal state in NbAs, which provides a real platform to test the potential of Weyltronics.

  1. A stress gettering mechanism in semi-insulating, copper-contaminated gallium arsenide

    Science.gov (United States)

    Kang, Nam Soo; Zirkle, Thomas E.; Schroder, Dieter K.

    1992-07-01

    We have demonstrated a stress gettering mechanism in semi-insulating, copper-contaminated gallium arsenide (GaAs) using cathodoluminescence (CL), thermally stimulated current spectroscopy (TSC), and low temperature Fourier transform infrared spectroscopy (FTIR). Cathodoluminescence shows a local gettering effect around dislocation cores in bulk semi-insulating GaAs qualitatively. This gettering result was confirmed by low temperature FTIR data, which show absorption features resulting from the transition of electrons from the valence band to copper levels. The energy level of each absorption shoulder corresponds to the various copper levels in GaAs. After gettering, the absorption depth at each shoulder decreases. Thermally stimulated current measurements show changes after copper doping. The characteristic returns to that of uncontaminated GaAs after gettering. On the basis of these qualitative and quantitative data, we conclude that copper was gettered, and we propose a stress gettering mechanism in semi-insulating, copper-contaminated GaAs on the basis of dislocation cores acting as localized gettering sites.

  2. Ab-initio Electronic, Transport and Related Properties of Zinc Blende Boron Arsenide (zb-BAs)

    Science.gov (United States)

    Nwigboji, Ifeanyi H.; Malozovsky, Yuriy; Bagayoko, Diola

    We present results from ab-initio, self-consistent density functional theory (DFT) calculations of electronic, transport, and bulk properties of zinc blende boron arsenide (zb-BAs). We utilized a local density approximation (LDA) potential and the linear combination of atomic orbital (LCAO) formalism. Our computational technique follows the Bagayoko, Zhao, and Williams method, as enhanced by Ekuma and Franklin. Our results include electronic energy bands, densities of states, and effective masses. We explain the agreement between these findings, including the indirect band gap, and available, corresponding, experimental ones. This work confirms the capability of DFT to describe accurately properties of materials, provided the computations adhere to the conditions of validity of DFT [AIP Advances, 4, 127104 (2014)]. Acknowledgments: This work was funded in part by the National Science Foundation (NSF) and the Louisiana Board of Regents, through LASiGMA [Award Nos. EPS- 1003897, NSF (2010-15)-RII-SUBR] and NSF HRD-1002541, the US Department of Energy - National, Nuclear Security Administration (NNSA) (Award No. DE- NA0002630), LaSPACE, and LONI-SUBR.

  3. On the understanding of irradiation effects in germanium, silicon and gallium arsenide semi-conductors

    International Nuclear Information System (INIS)

    We have studied the behaviour of germanium, silicon and gallium arsenide semiconductors irradiated by different projectiles (heavy ions, protons, electrons and fullerenes). At low doses, thanks to deep level transient spectroscopy (DLTS) and Hall effect electrical measurements, we were able to explicit the nature of the defects present in germanium after irradiation at room temperature. For different projectiles, we have determined the defect creation kinetics. At higher doses, the electrical measurements have brought to the fore the presence of a specific defect created only after an heavy ion (or proton) irradiation. Moreover, positron annihilation spectroscopy (PAS) measurements show that size of this specific defect increases with the fluence. The damage has also been quantified by channeling Rutherford backscaterring (RBS-C) measurements. At first sight, the obtained defect creation rates are normalized by the nuclear collisions. This normalization is also present in the inverse of the gain evolution in silicon bipolar transistors. Meanwhile, an extensive study shows an efficiency decrease of the defect creation at intermediate values of the electronic energy loss Se, then, at the opposite, an increasing at higher values of Se. In the three semiconductors, we have observed track formation after fullerenes irradiation. These tracks are amorphous cylinders which have been characterized by transmission and high resolution electronic microscopy. They are due to the very high values of the electronic energy density which can be deposited by fullerenes owing to their low velocity. (author)

  4. Californium interrogation prompt neutron (CIPN) instrument for non-destructive assay of spent nuclear fuel-Design concept and experimental demonstration

    Science.gov (United States)

    Henzlova, D.; Menlove, H. O.; Rael, C. D.; Trellue, H. R.; Tobin, S. J.; Park, Se-Hwan; Oh, Jong-Myeong; Lee, Seung-Kyu; Ahn, Seong-Kyu; Kwon, In-Chan; Kim, Ho-Dong

    2016-01-01

    This paper presents results of the first experimental demonstration of the Californium Interrogation Prompt Neutron (CIPN) instrument developed within a multi-year effort launched by the Next Generation Safeguards Initiative Spent Fuel Project of the United States Department of Energy. The goals of this project focused on developing viable non-destructive assay techniques with capabilities to improve an independent verification of spent fuel assembly characteristics. For this purpose, the CIPN instrument combines active and passive neutron interrogation, along with passive gamma-ray measurements, to provide three independent observables. This paper describes the initial feasibility demonstration of the CIPN instrument, which involved measurements of four pressurized-water-reactor spent fuel assemblies with different levels of burnup and two initial enrichments. The measurements were performed at the Post-Irradiation Examination Facility at the Korea Atomic Energy Institute in the Republic of Korea. The key aim of the demonstration was to evaluate CIPN instrument performance under realistic deployment conditions, with the focus on a detailed assessment of systematic uncertainties that are best evaluated experimentally. The measurements revealed good positioning reproducibility, as well as a high degree of insensitivity of the CIPN instrument's response to irregularities in a radial burnup profile. Systematic uncertainty of individual CIPN instrument signals due to assembly rotation was found to be orientation in the instrument.

  5. Magnetism of unconventional superconductors using the example of ruthenate and iron arsenide compounds

    International Nuclear Information System (INIS)

    The focus of this work lies on the magnetism in unconventional superconductors. The big question in this kind of superconductors is as magnetism influences the transition in the superconducting phase. During this thesis two different classes of compounds were investigated: iron-arsenides and ruthenates. The compounds of both have similarities to the famous cuprates. For the investigations of iron-arsenides the crystal structures of LiFeAs and Li0.95Fe0.05As were determined first. Afterwards the magnetic moments of both compounds as function of temperature and magnetic field and the spin density were measured. It was found out that the pure compound is a spin-singlet superconductor. The spin density is placed mainly at the iron atoms and can be described with the multipol-model. Additionally an impurity by iron atoms at interstitial places were found. For the non-stoichiometric compound the high magnetic moment below 156K could be confirmed. But the mail sin density is located at the position of the excess iron atom at interstitial positions. This positions changes with the magnetic field. This points to the fact that the high magnetic moment comes from the additional iron atoms which are formed in clusters. In addition, the crystal structure of REFeAsO (with RE=Ce, Pr and Nd) as a function of the temperature was examined. An orthorhombic transition was measured at 150 K. The precursors (which are also found in LaFeAsO) were seen. The strengthens of these precursors decreases with increasing size of the rare-earth atoms. For the ruthenates macroscopic investigations of the susceptibility and the electric resistivity of Ca3Ru0.9Ti0.1O7 were done. Moreover, the influence from the transition of the crystal structure was investigated. It turned out that the doping with titanium stabilizes the isolating phase which was already found in the pure connection. A jump by three scales was found in the electric resistivity and a change in the crystal structure (without changing

  6. Investigation on properties of ultrafast switching in a bulk gallium arsenide avalanche semiconductor switch

    International Nuclear Information System (INIS)

    Properties of ultrafast switching in a bulk gallium arsenide (GaAs) avalanche semiconductor switch based on semi-insulating wafer, triggered by an optical pulse, were analyzed using physics-based numerical simulations. It has been demonstrated that when a voltage with amplitude of 5.2 kV is applied, after an exciting optical pulse with energy of 1 μJ arrival, the structure with thickness of 650 μm reaches a high conductivity state within 110 ps. Carriers are created due to photons absorption, and electrons and holes drift to anode and cathode terminals, respectively. Static ionizing domains appear both at anode and cathode terminals, and create impact-generated carriers which contribute to the formation of electron-hole plasma along entire channel. When the electric field in plasma region increases above the critical value (∼4 kV/cm) at which the electrons drift velocity peaks, a domain comes into being. An increase in carrier concentration due to avalanche multiplication in the domains reduces the domain width and results in the formation of an additional domain as soon as the field outside the domains increases above ∼4 kV/cm. The formation and evolution of multiple powerfully avalanching domains observed in the simulations are the physical reasons of ultrafast switching. The switch exhibits delayed breakdown with the characteristics affected by biased electric field, current density, and optical pulse energy. The dependence of threshold energy of the exciting optical pulse on the biased electric field is discussed

  7. Coherent detection of THz waves based on THz-induced time-resolved luminescence quenching in bulk gallium arsenide.

    Science.gov (United States)

    Chu, Zheng; Liu, Jinsong; Wang, Kejia

    2012-05-01

    A kind of photoluminescence quenching, in which the time-resolved photoluminescence is modulated by a THz pulse, has been theoretically investigated by performing the ensemble Monte Carlo method in bulk gallium arsenide (GaAs) at room temperature. The quenching ratio could reach up to 50% under a strong THz field (100  kV/cm). The range in which luminescence quenching is linearly proportional to the THz field could be over 60  kV/cm. On the basis of these results, a principle for THz modulation and coherent detection is proposed. PMID:22555695

  8. Retinal alterations produced by low level gallium arsenide laser exposure. Interim report, 1 May--31 December 1976

    Energy Technology Data Exchange (ETDEWEB)

    Beatrice, E.S.; Lund, D.J.; Talsma, D.M.

    1977-02-01

    The retinas of rhesus monkeys were subjected to irradiation by a prototype gallium arsenide (GaAs) laser training device. The laser device operated at 1600 Hz (pulse repetition frequency mode) or 132 Hz (pulse code mode) with nominal peak pulse power of 1 watt and 10 watts. Exposure durations ranged from 1.0 sec to 90 sec. The tissue reaction at the exposure site was characterized by the development of a pale gray clouding within 10 sec of initiation of the exposure. The nature of the retinal change could not be determined by ophthalmoscopic, histologic, or flourescein leakage techniques.

  9. Revealing the optoelectronic and thermoelectric properties of the Zintl quaternary arsenides ACdGeAs{sub 2} (A = K, Rb)

    Energy Technology Data Exchange (ETDEWEB)

    Azam, Sikander; Khan, Saleem Ayaz [New Technologies—Research Center, University of West Bohemia, Univerzitni 8, 306 14 Pilsen (Czech Republic); Goumri-Said, Souraya, E-mail: Souraya.Goumri-Said@chemistry.gatech.edu [School of Chemistry and Biochemistry and Center for Organic Photonics and Electronics, Georgia Institute of Technology, Atlanta, GA 30332-0400 (United States)

    2015-10-15

    Highlights: • Zintl tetragonal phase ACdGeAs{sub 2} (A = K, Rb) are chalcopyrite and semiconductors. • Their direct band gap is suitable for PV, optolectronic and thermoelectric applications. • Combination of DFT and Boltzmann transport theory is employed. • The present arsenides are found to be covalent materials. - Abstract: Chalcopyrite semiconductors have attracted much attention due to their potential implications in photovoltaic and thermoelectric applications. First principle calculations were performed to investigate the electronic, optical and thermoelectric properties of the Zintl tetragonal phase ACdGeAs{sub 2} (A = K, Rb) using the full potential linear augmented plane wave method and the Engle–Vosko GGA (EV–GGA) approximation. The present compounds are found semiconductors with direct band gap and covalent bonding character. The optical transitions are investigated via the dielectric function (real and imaginary parts) along with other related optical constants including refractive index, reflectivity and energy-loss spectrum. Combining results from DFT and Boltzmann transport theory, we reported the thermoelectric properties such as the Seebeck’s coefficient, electrical and thermal conductivity, figure of merit and power factor as function of temperatures. The present chalcopyrite Zintl quaternary arsenides deserve to be explored for their potential applications as thermoelectric materials and for photovoltaic devices.

  10. Revealing the optoelectronic and thermoelectric properties of the Zintl quaternary arsenides ACdGeAs2 (A = K, Rb)

    International Nuclear Information System (INIS)

    Highlights: • Zintl tetragonal phase ACdGeAs2 (A = K, Rb) are chalcopyrite and semiconductors. • Their direct band gap is suitable for PV, optolectronic and thermoelectric applications. • Combination of DFT and Boltzmann transport theory is employed. • The present arsenides are found to be covalent materials. - Abstract: Chalcopyrite semiconductors have attracted much attention due to their potential implications in photovoltaic and thermoelectric applications. First principle calculations were performed to investigate the electronic, optical and thermoelectric properties of the Zintl tetragonal phase ACdGeAs2 (A = K, Rb) using the full potential linear augmented plane wave method and the Engle–Vosko GGA (EV–GGA) approximation. The present compounds are found semiconductors with direct band gap and covalent bonding character. The optical transitions are investigated via the dielectric function (real and imaginary parts) along with other related optical constants including refractive index, reflectivity and energy-loss spectrum. Combining results from DFT and Boltzmann transport theory, we reported the thermoelectric properties such as the Seebeck’s coefficient, electrical and thermal conductivity, figure of merit and power factor as function of temperatures. The present chalcopyrite Zintl quaternary arsenides deserve to be explored for their potential applications as thermoelectric materials and for photovoltaic devices

  11. Plasma enhanced deposition of 'silicon nitride' for use as an encapsulant for silicon ion-implanted gallium arsenide

    International Nuclear Information System (INIS)

    Silicon nitride films have been produced by plasma enhanced chemical vapour deposition using silane and ammonia as the reactant gases in a Plasma-Therm PK1250PD machine. The compositions of the films have been investigated as a function of the silane to ammonia flow rate ratio used for deposition, using infra-red transmission and Auger electron spectroscopies. These techniques indicated that the plasma deposited films were silicon-rich and contained hydrogen. The oxygen content of the films was below the detection limit of Auger electron spectroscopy implying that it was less than 1%. Silicon ion-implanted semi-insulating gallium arsenide has been annealed using an approximately 1000 A thick film of plasma deposited silicon nitride as an encapsulant. This capped annealing technique has achieved 70% activations of 4 x 1012 cm-2, 200 keV silicon implants with sheet Hall mobilities of 4000 cm2 V-1 s-1 at room temperature. Free carrier concentration and Hall mobility profiles are presented. Unimplanted semi-insulating gallium arsenide samples have also been capped annealed in the same manner and maintained a sheet resistivity of greater than 107 Ω/square after annealing. (author)

  12. Analysis of Time Dependent Low Level Exposure to Gallium Arsenide on Blood ALAD activity, Glutathione and Lipid per oxidation levels in Rat Blood, Liver and Kidney

    Directory of Open Access Journals (Sweden)

    Braham Deo Gupta

    2015-06-01

    Full Text Available Gallium arsenide (GaAs, an intermetallic semiconductor has widespread applications in the electronic industry. GaAs has the ability to dissociate into its constitutive moieties, arsenic and gallium which might be responsible for the oxidative stress. The present study was aimed at evaluating, effect of gallium arsenide on blood ALAD activity, glutathione and lipid per oxidation levels in rat blood, liver and kidney on exposure of 1, 2 and 6 months. Result indicated that arsenic moiety in GaAs was mainly responsible for causing oxidative stress via increased TBARS levels, decreased glutathione levels in blood and tissues. We also noted the decreased activity of ALAD in rat blood on exposure to gallium arsenide. The study demonstrates that the time dependent exposure to low level gallium arsenide led to increased in lipid per oxidation, decrease glutathione level and ALAD activity which concludes that the slow release of arsenic moiety from GaAs is mainly responsible for oxidative stress in rats and exerts its toxicity in time dependent manner related to its dissolution and maximum toxicity by increasing the time period of exposure.

  13. Biological Efficiency of Californium-252 Source Evaluated by Comet Assay, Classical Cytogenetics and FISH in Human Lymphocytes Irradiated without and with BSH Pretreatment

    International Nuclear Information System (INIS)

    Biological effectiveness of californium-252 source was evaluated after irradiations in vitro of normal or pre-treated with compound enriched in B-10 ion cells. Peripheral blood lymphocytes were used as a model for human cells. DNA and chromosomal damage were studied to compare biological effectiveness of irradiation. Human blood samples or isolated lymphocytes were irradiated with the isotopic source of 252Cf, at the Faculty of Physics and Nuclear Techniques at the University of Mining and Metallurgy (both neutron source and samples were placed in ''infinite'' polyethylene block). Chemical pretreatment with Na210B12H11SH (BSH) was performed to introduce boron-10 ion into cells in order to check any enhancement effect due to the process of boron neutron capture. Single cell gel electrophoresis also known as the Comet assay was done to investigate the DNA damage. Classical cytogenetic analysis was applied to assess the frequencies of unstable aberrations (dicentrics, rings and a centric fragments). To evaluate the frequencies of stable aberrations the fluorescence in situ hybridisation (FISH) with probes for chromosomes 1, 4 (14.3% of the whole genome) was performed. Linear (or close to linear) increase with radiation dose were observed for the DNA damage and aberration frequencies in lymphocytes both untreated or pre-treated with BSH. Levels of translocations evaluated for the whole genome were comparable with the frequencies of dicentrics and rings. No significant differences were detected due to radiation dose in the frequencies of sister chromatid exchanges (SCE) detected in the second mitosis. No statistically significant differences were observed in various biological end-points between normal or boron pre-treated cells. (author)

  14. Characteristics of trap-filled gallium arsenide photoconductive switches used in high gain pulsed power applications

    International Nuclear Information System (INIS)

    The electrical properties of semi-insulating (SI) Gallium Arsenide (GaAs) have been investigated for some time, particularly for its application as a substrate in microelectronics. Of late this material has found a variety of applications other than as an isolation region between devices, or the substrate of an active device. High resistivity SI GaAs is increasingly being used in charged particle detectors and photoconductive semiconductor switches (PCSS). PCSS made from these materials operating in both the linear and non-linear modes have applications such as firing sets, as drivers for lasers, and in high impedance, low current Q-switches or Pockels cells. In the non-linear mode, it has also been used in a system to generate Ultra-Wideband (UWB) High Power Microwaves (HPM). The choice of GaAs over silicon offers the advantage that its material properties allow for fast, repetitive switching action. Furthermore photoconductive switches have advantages over conventional switches such as improved jitter, better impedance matching, compact size, and in some cases, lower laser energy requirement for switching action. The rise time of the PCSS is an important parameter that affects the maximum energy transferred to the load and it depends, in addition to other parameters, on the bias or the average field across the switch. High field operation has been an important goal in PCSS research. Due to surface flashover or premature material breakdown at higher voltages, most PCSS, especially those used in high power operation, need to operate well below the inherent breakdown voltage of the material. The lifetime or the total number of switching operations before breakdown, is another important switch parameter that needs to be considered for operation at high bias conditions. A lifetime of ∼ 104 shots has been reported for PCSS's used in UWB-HPM generation [5], while it has exceeded 108 shots for electro-optic drivers. Much effort is currently being channeled in the study

  15. Pixel x-ray detectors in epitaxial gallium arsenide with high-energy resolution capabilities (Fano factor experiment determination)

    International Nuclear Information System (INIS)

    Gallium Arsenide pixel detectors with an area of 170 x 320 microm2 and thickness of 5 microm, realized by molecular beam epitaxy, have been designed and tested with X- and γ rays. No significant charge trapping effects have been observed, and a charge collection efficiency of 100% has been measured. At room temperature an energy resolution of 671 eV full width at half maximum (FWHM) at 59.54 keV has been obtained, with an electronic noise of 532 eV FWHM. With the detector cooled to 243 K, the electronic noise is reduced to 373 eV FWHM, and the Kα and Kβ lines of the 55Fe spectrum can be resolved. The Fano factor for GaAs has been measured at room temperature with 59.5 keV photons yielding F = 0.12 ± 0.01

  16. Laser modulation of human immune system: inhibition of lymphocyte proliferation by a gallium-arsenide laser at low energy

    International Nuclear Information System (INIS)

    Cultured human lymphocytes were subjected to irradiation with a gallium-arsenide laser at energy fluence varying from 2.17 to 651 mJ/cm2, and the cell proliferation was assessed by [3H]thymidine incorporation. Both mitogenic proliferation in response to phytohemagglutinin and spontaneous cell proliferation were markedly inhibited by the laser irradiation at energy fluence as low as 10.85 mJ/cm2. Similarly, the functional response of cells to antigen stimulation in a one-way mixed-lymphocyte reaction was also diminished as a result of laser irradiation. The results indicate that laser irradiation at low energy can interfere with immune system in vitro, and similar modulation could potentially occur in human subjects exposed to laser irradiation in vivo

  17. Electron tunneling transport across heterojunctions between europium sulfide and indium arsenide

    Science.gov (United States)

    Kallaher, Raymond L.

    This dissertation presents research done on utilizing the ferromagnetic semiconductor europium sulfide (EuS) to inject spin polarized electrons into the non-magnetic semiconductor indium arsenide (InAs). There is great interest in expanding the functionality of modern day electronic circuits by creating devices that depend not only on the flow of charge in the device, but also on the transport of spin through the device. Within this mindset, there is a concerted effort to establish an efficient means of injecting and detecting spin polarized electrons in a two dimensional electron system (2DES) as the first step in developing a spin based field effect transistor. Thus, the research presented in this thesis has focused on the feasibility of using EuS, in direct electrical contact with InAs, as a spin injecting electrode into an InAs 2DES. Doped EuS is a concentrated ferromagnetic semiconductor, whose conduction band undergoes a giant Zeeman splitting when the material becomes ferromagnetic. The concomitant difference in energy between the spin-up and spin-down energy bands makes the itinerant electrons in EuS highly spin polarized. Thus, in principle, EuS is a good candidate to be used as an injector of spin polarized electrons into non-magnetic materials. In addition, the ability to adjust the conductivity of EuS by varying the doping level in the material makes EuS particularly suited for injecting spins into non-magnetic semiconductors and 2DES. For this research, thin films of EuS have been grown via e-beam evaporation of EuS powder. This growth technique produces EuS films that are sulfur deficient; these sulfur vacancies act as intrinsic electron donors and the resulting EuS films behave like heavily doped ferromagnetic semiconductors. The growth parameters and deposition procedures were varied and optimized in order to fabricate films that have minimal crystalline defects. Various properties and characteristics of these EuS films were measured and compared to

  18. Study of the structure of a thin aluminum layer on the vicinal surface of a gallium arsenide substrate by high-resolution electron microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Lovygin, M. V., E-mail: lemi@miee.ru; Borgardt, N. I. [National Research University of Electronic Technology “MIET” (Russian Federation); Seibt, M. [Universität Göttingen, IV Physikalisches Institut (Germany); Kazakov, I. P.; Tsikunov, A. V. [Russian Academy of Sciences, Lebedev Physical Institute (Russian Federation)

    2015-12-15

    The results of electron-microscopy studies of a thin epitaxial aluminum layer deposited onto a misoriented gallium-arsenide substrate are reported. It is established that the layer consists of differently oriented grains, whose crystal lattices are coherently conjugated with the substrate with the formation of misfit dislocations, as in the case of a layer on a singular substrate. Atomic steps on the substrate surface are visualized, and their influence on the growth of aluminum crystal grains is discussed.

  19. Observation of persistent photoconductivity in bulk Gallium Arsenide and Gallium Phosphide samples at cryogenic temperatures using the Whispering Gallery mode method

    CERN Document Server

    Hartnett, J G; Floch, J -M Le; Krupka, J; Tobar, M E; Cros, D

    2009-01-01

    Whispering Gallery modes in bulk cylindrical Gallium Arsenide and Gallium Phosphide samples have been examined both in darkness and under white light at cryogenics temperatures < 50 K. In both cases persistent photoconductivity was observed after initially exposing semiconductors to white light from a halogen lamp. Photoconductance decay time constants for GaP and GaAs were determined to be 0.900 +/- 0.081 ns and 1.098 +/- 0.063 ns, respectively, using this method.

  20. Point defects and electric compensation in gallium arsenide single crystals; Punktdefekte und elektrische Kompensation in Galliumarsenid-Einkristallen

    Energy Technology Data Exchange (ETDEWEB)

    Kretzer, Ulrich

    2007-12-10

    In the present thesis the point-defect budget of gallium arsenide single crystals with different dopings is studied. It is shown, in which way the concentration of the single point defects depende on the concentration of the dopants, the stoichiometry deviation, and the position of the Fermi level. For this serve the results of the measurement-technical characterization of a large number of samples, in the fabrication of which these parameters were directedly varied. The main topic of this thesis lies in the development of models, which allow a quantitative description of the experimentally studied electrical and optical properties of gallium arsenide single crystals starting from the point-defect concentrations. Because from point defects charge carriers can be set free, their concentration determines essentially the charge-carrier concentration in the bands. In the ionized state point defects act as scattering centers for free charge carriers and influence by this the drift mobility of the charge carriers. A thermodynamic modeling of the point-defect formation yields statements on the equilibrium concentrations of the point defects in dependence on dopant concentration and stoichiometry deviation. It is show that the electrical properties of the crystals observed at room temperature result from the kinetic suppression of processes, via which the adjustment of a thermodynamic equilibrium between the point defects is mediated. [German] In der vorliegenden Arbeit wird der Punktdefekthaushalt von Galliumarsenid-Einkristallen mit unterschiedlichen Dotierungen untersucht. Es wird gezeigt, in welcher Weise die Konzentration der einzelnen Punktdefekte von der Konzentration der Dotierstoffe, der Stoechiometrieabweichung und der Lage des Ferminiveaus abhaengen. Dazu dienen die Ergebnisse der messtechnischen Charakterisierung einer grossen Anzahl von Proben, bei deren Herstellung diese Parameter gezielt variiert wurden. Der Schwerpunkt der Arbeit liegt in der Entwicklung

  1. Structural anomalies in undoped gallium arsenide observed in high-resolution diffraction imaging with monochromatic synchrotron radiation

    Science.gov (United States)

    Steiner, B.; Kuriyama, M.; Dobbyn, R. C.; Laor, U.; Larson, D.

    1989-01-01

    Novel, streak-like disruption features restricted to the plane of diffraction have recently been observed in images obtained by synchrotron radiation diffraction from undoped, semi-insulating gallium arsenide crystals. These features were identified as ensembles of very thin platelets or interfaces lying in (110) planes, and a structural model consisting of antiphase domain boundaries was proposed. We report here the other principal features observed in high resolution monochromatic synchrotron radiation diffraction images: (quasi) cellular structure; linear, very low-angle subgrain boundaries in (110) directions, and surface stripes in a (110) direction. In addition, we report systematic differences in the acceptance angle for images involving various diffraction vectors. When these observations are considered together, a unifying picture emerges. The presence of ensembles of thin (110) antiphase platelet regions or boundaries is generally consistent not only with the streak-like diffraction features but with the other features reported here as well. For the formation of such regions we propose two mechanisms, operating in parallel, that appear to be consistent with the various defect features observed by a variety of techniques.

  2. Non-local exchange correlation functionals impact on the structural, electronic and optical properties of III-V arsenides

    KAUST Repository

    Anua, N. Najwa

    2013-08-20

    Exchange correlation (XC) energy functionals play a vital role in the efficiency of density functional theory (DFT) calculations, more soundly in the calculation of fundamental electronic energy bandgap. In the present DFT study of III-arsenides, we investigate the implications of XC-energy functional and corresponding potential on the structural, electronic and optical properties of XAs (X = B, Al, Ga, In). Firstly we report and discuss the optimized structural lattice parameters and the band gap calculations performed within different non-local XC functionals as implemented in the DFT-packages: WIEN2k, CASTEP and SIESTA. These packages are representative of the available code in ab initio studies. We employed the LDA, GGA-PBE, GGA-WC and mBJ-LDA using WIEN2k. In CASTEP, we employed the hybrid functional, sX-LDA. Furthermore LDA, GGA-PBE and meta-GGA were employed using SIESTA code. Our results point to GGA-WC as a more appropriate approximation for the calculations of structural parameters. However our electronic bandstructure calculations at the level of mBJ-LDA potential show considerable improvements over the other XC functionals, even the sX-LDA hybrid functional. We report also the optical properties within mBJ potential, which show a nice agreement with the experimental measurements in addition to other theoretical results. © 2013 IOP Publishing Ltd.

  3. High-performance organic/inorganic hybrid heterojunction based on Gallium Arsenide (GaAs) substrates and a conjugated polymer

    Science.gov (United States)

    Jameel, D. A.; Felix, J. F.; Aziz, M.; Al Saqri, N.; Taylor, D.; de Azevedo, W. M.; da Silva, E. F.; Albalawi, H.; Alghamdi, H.; Al Mashary, F.; Henini, M.

    2015-12-01

    In this paper, we present an extensive study of the electrical properties of organic-inorganic hybrid heterojunctions. Polyaniline (PANI) thin films were deposited by a very simple technique on (1 0 0) and (3 1 1)B n-type Gallium Arsenide (GaAs) substrates to fabricate hybrid devices with excellent electrical properties. The hybrid devices were electrically characterized using current-voltage (I-V), capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS) measurements in the temperature range 20-440 K. The analysis of I-V characteristics based on the thermionic emission mechanism has shown a decrease of the barrier height and an increase of the ideality factor at lower temperatures for both hybrid devices. The interface states were analyzed by series resistance obtained using the C-G-V methods. The interface state density (Dit) of PANI/(1 0 0) GaAs devices is approximately one order of magnitude higher than that of PANI/(3 1 1)B GaAs devices. This behaviour is attributed to the effect of crystallographic orientation of the substrates, and was confirmed by DLTS results as well. Additionally, the devices show excellent air stability, with rectification ratio values almost unaltered after two years of storage under ambient conditions, making the polyaniline an interesting conductor polymer for future devices applications.

  4. Enhancement of metal - semiconductor barrier height with superthin silicon dioxide films deposited on gallium arsenide by liquid phase deposition

    International Nuclear Information System (INIS)

    This study presents a method for surface passivation using silicon dioxide (SiO2). The proposed method has shown great effectiveness on metal - semiconductor barrier height enhancement. A high quality SiO2 layer is developed via liquid phase deposition, a method which naturally leaves a doping-level fluorine residue in the SiO2. The addition of fluorine to enhance the Schottky barrier height (SBH) is first discussed. Experimental results are presented. It is found that this fluorine addition enhances the Schottky barrier height, which allows a larger positive gate bias for enhancement mode metal - semiconductor field-effect transistors, thus permitting the fabrication of digital logic circuits with improved noise margins and relaxed tolerance with regard to device threshold voltage uniformity. The SBH to n-gallium arsenide (GaAS) is found to be approximately 0.7 eV. Finally, the effective barrier height of the metal - insulator - semiconductor structure reached 1.03 eV after annealing. The enhancement of SBH has been attributed to the formation of these stable interface layers. A model for fluorine-enhanced SiO2 SBH enhancement is also presented. [copyright] 2001 American Institute of Physics

  5. CO2 laser-based dispersion interferometer utilizing orientation-patterned gallium arsenide for plasma density measurements

    International Nuclear Information System (INIS)

    A dispersion interferometer based on the second-harmonic generation of a carbon dioxide laser in orientation-patterned gallium arsenide has been developed for measuring electron density in plasmas. The interferometer includes two nonlinear optical crystals placed on opposite sides of the plasma. This instrument has been used to measure electron line densities in a pulsed radio-frequency generated argon plasma. A simple phase-extraction technique based on combining measurements from two successive pulses of the plasma has been used. The noise-equivalent line density was measured to be 1.7 × 1017 m−2 in a detection bandwidth of 950 kHz. One of the orientation-patterned crystals produced 13 mW of peak power at the second-harmonic wavelength from a carbon dioxide laser with 13 W of peak power. Two crystals arranged sequentially produced 58 mW of peak power at the second-harmonic wavelength from a carbon dioxide laser with 37 W of peak power

  6. Emergence of spin-orbit fields in magnetotransport of quasi-two-dimensional iron on gallium arsenide

    Science.gov (United States)

    Hupfauer, T.; Matos-Abiague, A.; Gmitra, M.; Schiller, F.; Loher, J.; Bougeard, D.; Back, C. H.; Fabian, J.; Weiss, D.

    2015-06-01

    The desire for higher information capacities drives the components of electronic devices to ever smaller dimensions so that device properties are determined increasingly more by interfaces than by the bulk structure of the constituent materials. Spintronic devices, especially, benefit from the presence of interfaces--the reduced structural symmetry creates emergent spin-orbit fields that offer novel possibilities to control device functionalities. But where does the bulk end, and the interface begin? Here we trace the interface-to-bulk transition, and follow the emergence of the interfacial spin-orbit fields, in the conducting states of a few monolayers of iron on top of gallium arsenide. We observe the transition from the interface- to bulk-induced lateral crystalline magnetoanisotropy, each having a characteristic symmetry pattern, as the epitaxially grown iron channel increases from four to eight monolayers. Setting the upper limit on the width of the interface-imprinted conducting channel is an important step towards an active control of interfacial spin-orbit fields.

  7. Californium Recovery from Palladium Wire

    Energy Technology Data Exchange (ETDEWEB)

    Burns, Jon D. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

    2014-08-01

    The recovery of 252Cf from palladium-252Cf cermet wires was investigated to determine the feasibility of implementing it into the cermet wire production operation at Oak Ridge National Laboratory’s Radiochemical Engineering Development Center. The dissolution of Pd wire in 8 M HNO3 and trace amounts of HCl was studied at both ambient and elevated temperatures. These studies showed that it took days to dissolve the wire at ambient temperature and only 2 hours at 60°C. Adjusting the ratio of the volume of solvent to the mass of the wire segment showed little change in the kinetics of dissolution, which ranged from 0.176 mL/mg down to 0.019 mL/mg. A successful chromatographic separation of 153Gd, a surrogate for 252Cf, from Pd was demonstrated using AG 50x8 cation exchange resin with a bed volume of 0.5 mL and an internal diameter of 0.8 cm.

  8. Light-trapping and recycling for extraordinary power conversion in ultra-thin gallium-arsenide solar cells.

    Science.gov (United States)

    Eyderman, Sergey; John, Sajeev

    2016-01-01

    We demonstrate nearly 30% power conversion efficiency in ultra-thin (~200 nm) gallium arsenide photonic crystal solar cells by numerical solution of the coupled electromagnetic Maxwell and semiconductor drift-diffusion equations. Our architecture enables wave-interference-induced solar light trapping in the wavelength range from 300-865 nm, leading to absorption of almost 90% of incoming sunlight. Our optimized design for 200 nm equivalent bulk thickness of GaAs, is a square-lattice, slanted conical-pore photonic crystal (lattice constant 550 nm, pore diameter 600 nm, and pore depth 290 nm), passivated with AlGaAs, deposited on a silver back-reflector, with ITO upper contact and encapsulated with SiO2. Our model includes both radiative and non-radiative recombination of photo-generated charge carriers. When all light from radiative recombination is assumed to escape the structure, a maximum achievable photocurrent density (MAPD) of 27.6 mA/cm(2) is obtained from normally incident AM 1.5 sunlight. For a surface non-radiative recombination velocity of 10(3) cm/s, this corresponds to a solar power conversion efficiency of 28.3%. When all light from radiative recombination is trapped and reabsorbed (complete photon recycling) the power conversion efficiency increases to 29%. If the surface recombination velocity is reduced to 10 cm/sec, photon recycling is much more effective and the power conversion efficiency reaches 30.6%. PMID:27334045

  9. Light-trapping and recycling for extraordinary power conversion in ultra-thin gallium-arsenide solar cells

    Science.gov (United States)

    Eyderman, Sergey; John, Sajeev

    2016-01-01

    We demonstrate nearly 30% power conversion efficiency in ultra-thin (~200 nm) gallium arsenide photonic crystal solar cells by numerical solution of the coupled electromagnetic Maxwell and semiconductor drift-diffusion equations. Our architecture enables wave-interference-induced solar light trapping in the wavelength range from 300–865 nm, leading to absorption of almost 90% of incoming sunlight. Our optimized design for 200 nm equivalent bulk thickness of GaAs, is a square-lattice, slanted conical-pore photonic crystal (lattice constant 550 nm, pore diameter 600 nm, and pore depth 290 nm), passivated with AlGaAs, deposited on a silver back-reflector, with ITO upper contact and encapsulated with SiO2. Our model includes both radiative and non-radiative recombination of photo-generated charge carriers. When all light from radiative recombination is assumed to escape the structure, a maximum achievable photocurrent density (MAPD) of 27.6 mA/cm2 is obtained from normally incident AM 1.5 sunlight. For a surface non-radiative recombination velocity of 103 cm/s, this corresponds to a solar power conversion efficiency of 28.3%. When all light from radiative recombination is trapped and reabsorbed (complete photon recycling) the power conversion efficiency increases to 29%. If the surface recombination velocity is reduced to 10 cm/sec, photon recycling is much more effective and the power conversion efficiency reaches 30.6%. PMID:27334045

  10. Design of a homogeneous subcritical nuclear reactor based on thorium with a source of californium 252; Diseno de un reactor nuclear subcritico homogeneo a base de Torio con una fuente de Californio 252

    Energy Technology Data Exchange (ETDEWEB)

    Delgado H, C. E.; Vega C, H. R. [Universidad Autonoma de Zacatecas, Unidad Academica de Estudios Nucleares, Cipres No. 10, Fracc. La Penuela, 98068 Zacatecas, Zac. (Mexico); Sajo B, L., E-mail: ce_delgado89@hotmail.com [Universidad Simon Bolivar, Laboratorio de Fisica Nuclear, Apdo. 89000, 1080A Caracas (Venezuela, Bolivarian Republic of)

    2015-10-15

    Full text: One of the energy alternatives to fossil fuels which do not produce greenhouse gases is the nuclear energy. One of the drawbacks of this alternative is the generation of radioactive wastes of long half-life and its relation to the generation of nuclear materials to produce weapons of mass destruction. An option to these drawbacks of nuclear energy is to use Thorium as part of the nuclear fuel which it becomes in U{sup 233} when capturing neutrons, that is a fissile material. In this paper Monte Carlo methods were used to design a homogeneous subcritical reactor based on thorium. As neutron reflector graphite was used. The reactor core is homogeneous and is formed of 70% light water as moderator, 12% of enriched uranium UO{sub 2}(NO{sub 3}){sub 4} and 18% of thorium Th(NO{sub 3}){sub 4} as fuel. To start the nuclear fission chain reaction an isotopic source of californium 252 was used with an intensity of 4.6 x 10{sup 7} s{sup -1}. In the design the value of the effective multiplication factor, whose value turned out k{sub eff} <1 was calculated. Also, the neutron spectra at different distances from the source and the total fluence were calculated, as well as the values of the ambient dose equivalent in the periphery of the reactor. (Author)

  11. Manganese determination om minerals by activation analysis, using the californium-252 as a neutron source; Determinacao de manganes em minerios, por analise por ativacao, usando californio-252 como fonte de neutrons

    Energy Technology Data Exchange (ETDEWEB)

    Cardoso, Antonio

    1976-07-01

    Neutron Activation Analysis, using a Californium-252 neutron source, has been applied for the determination of manganese in ores such as pyrolusite, rodonite (manganese silicate)' and blending used in dry-batteries The favorable nuclear properties of manganese, such as high thermal neutron cross-section for the reaction {sup 55}Mn (n.gamma){sup 56} Mn, high concentration of manganese in the matrix and short half - life of {sup 56}Mn, are an ideal combination for non-destructive analysis of manganese in ores. Samples and standards of manganese dioxide were irradiated for about 20 minutes, followed by a 4 to 15 minutes decay and counted in a single channel pulse-height discrimination using a NaI(Tl) scintillation detector. Counting time was equal to 10 minutes. The interference of nuclear reactions {sup 56}Fe(n,p){sup 56}Mn and {sup 59} Co (n, {alpha}){sup 56} were studied, as well as problems in connection with neutron shadowing during irradiation, gamma-rays attenuation during counting and influence of granulometry of samples. One sample,was also analysed by wet-chemical method (sodium bismuthate) in order to compare results. As a whole, i t was shown that the analytical method of neutron activation for manganese in ores and blending, is a method simple, rapid and with good precision and accuracy. (author)

  12. A final report for: Gallium arsenide P-I-N detectors for high-sensitivity imaging of thermal neutrons

    International Nuclear Information System (INIS)

    This SBIR Phase I developed neutron detectors made FR-om gallium arsenide (GaAs) p-type/ intrinsic/n-type (P-I-N) diodes grown by metalorganic chemical vapor deposition (MOCVD) onto semi-insulating (S1) bulk GaAs wafers. A layer of isotonically enriched boron-10 evaporated onto the FR-ont surface serves to convert incoming neutrons into lithium ions and a 1.47 MeV alpha particle which creates electron-hole pairs that are detected by the GaAs diode. Various thicknesses of ''intrinsic'' (I) undoped GaAs were tested, as was use of a back-surface field (BSF) formed FR-om a layer of AlxGa1-xAs. Schottky-barrier diodes formed FR-om the same structures without the p+ GaAs top layer were tested as a comparison. After mesa etching and application of contacts, devices were tested in visible light before application of the boron coating. Internal quantum efficiency (IQE) of the best diode near the GaAs bandedge is over 90%. The lowest dark current measured is 1 x 10-12 amps at -1 V on a 3mm x 3mm diode, or a density of 1.1 x 10-11 amps cm-2, with many of the diode structures tested having nearly similar results. The PIN diodes were significantly better than the Schottky barrier device, which had six orders of magnitude higher dark current. Diodes were characterized in terms of their current-mode response to 5.5 MeV alpha particles FR-om 241-Americium. These radiation-induced currents were as high as 9.78 x 10-7 A cm-1 on a PIN device with an AlxGa1-xAs BSF. Simple PIN diodes had currents as high as 2.44 x 10-7 A cm-2, with thicker undoped layers showing better sensitivity. Boron coatings were applied, and response to neutrons tested at University of Michigan by Dr. Doug McGregor. Devices with PIN and Schottky barrier designs showed neutron detection efficiencies as high as 2% on 5 (micro)m thick devices, with no need for external bias voltages. PIN diodes showed higher breakdown voltages and lower noise characteristics than did the Schottky barrier design. Uniformity of

  13. Ternary arsenides based on platinum–indium and palladium–indium fragments of the Cu{sub 3}Au-type: Crystal structures and chemical bonding

    Energy Technology Data Exchange (ETDEWEB)

    Zakharova, Elena Yu.; Andreeva, Natalia A.; Kazakov, Sergey M. [Department of Chemistry, Lomonosov Moscow State University, Leninskie Gory 1-3, GSP-1, 119991 Moscow (Russian Federation); Kuznetsov, Alexey N., E-mail: alexei@inorg.chem.msu.ru [Department of Chemistry, Lomonosov Moscow State University, Leninskie Gory 1-3, GSP-1, 119991 Moscow (Russian Federation); N.S. Kurnakov Institute of General and Inorganic Chemistry of Russian Academy of Sciences, Leninskii pr. 31, 119991 Moscow (Russian Federation)

    2015-02-05

    Highlights: • Three metal-rich platinum–indium and palladium–indium arsenides were synthesized. • Their crystal structures were determined from powder XRD. • Electronic structures and bonding were studied using DFT/FP-LAPW calculations. • Multi-centered Pt–In or Pd–In bonding was revealed using ELF and ELI-D analysis. • Extra pairwise Pt–Pt interactions are observed only for Pt-based compounds. - Abstract: Three metal-rich palladium–indium and platinum–indium arsenides, Pd{sub 5}InAs, Pt{sub 5}InAs, and Pt{sub 8}In{sub 2}As, were synthesized using a high-temperature ampoule technique. Their crystal structures were determined from Rietveld analysis of powder diffraction data. All the compounds crystallize in tetragonal system with P4/mmm space group (Pd{sub 5}InAs: a = 3.9874(1) Å, c = 6.9848(2) Å, Z = 1, R{sub p} = 0.053; R{sub b} = 0.013; Pt{sub 5}InAs: a = 3.9981(2) Å, c = 7.0597(4) Å, Z = 1, R{sub p} = 0.058, R{sub b} = 0.016; Pt{sub 8}In{sub 2}As: a = 3.9872(3) Å, c = 11.1129(7) Å, Z = 1, R{sub p} = 0.047; R{sub b} = 0.014). The first two compounds belong to the Pd{sub 5}TlAs structure type, while the third one is isotypic with the recently discovered Pd{sub 8}In{sub 2}Se. Main structural units in all arsenides are indium-centered [TM{sub 12}In] cuboctahedra (TM = Pd, Pt) of the Cu{sub 3}Au type, single- and double-stacked along the c axis in TM{sub 5}InAs and Pt{sub 8}In{sub 2}As, respectively, alternating with [TM{sub 8}As] rectangular prisms. DFT electronic structure calculations predict all three compounds to be 3D metallic conductors and Pauli-like paramagnets. According to the bonding analysis based on the electron localization function and electron localizability indicator topologies, all compounds feature multi-centered interactions between transition metal and indium in their heterometallic fragments. Additionally, pairwise interactions between platinum atoms are also observed, indicating a somewhat more localized bonding

  14. Indium Arsenide Nanowires

    DEFF Research Database (Denmark)

    Madsen, Morten Hannibal

    substrates. The crystal structure of the NWs has also been investigated, and a method for obtaining pure wurtzite NWs with a well controlled diameter and length is presented. For self-assisted growth of InAs NWs a method for enhanced control of the nanowire morphology by pre-treatment of the oxide layer...... is presented. A series of experiments with formation of a droplet on top of the wires has been carried out and pyramidal shaped structures at the NW top with pure zinc blende crystal structure are observed. A novel in-situ experiment with fabrication of NWs and simultanous characterization using x...

  15. Gallium arsenide pixel detectors

    Energy Technology Data Exchange (ETDEWEB)

    Bates, R.; DaVia, C.; O`Shea, V.; Raine, C.; Smith, K. [Glasgow Univ. (United Kingdom). Dept. of Physics and Astronomy; Campbell, M.; Cantatore, E.; Heijne, E.M.; Middelkamp, P.; Ropotar, I.; Scharfetter, L.; Snoeys, W. [CERN, ECP Div., CH-1211 Geneva 23 (Switzerland); D`Auria, S.; Papa, C. del [Department of Physics, University of Udine and INFN Trieste, Via delle Scienze 208, I-33100 Udine (Italy); RD8 Collaboration

    1998-06-01

    GaAs detectors can be fabricated with bidimensional single-sided electrode segmentation. They have been successfully bonded using flip-chip technology to the Omega-3 silicon read-out chip. We present here the design features of the GaAs pixel detectors and results from a test performed at the CERN SpS with a 120 GeV {pi}{sup -} beam. The detection efficiency was 99.2% with a nominal threshold of 5000 e{sup -}. (orig.) 10 refs.

  16. Atmospheric pressure chemical vapour deposition of vanadium arsenide thin films via the reaction of VCl4 or VOCl3 with tBuAsH2

    International Nuclear Information System (INIS)

    Thin films of vanadium arsenide were deposited via the dual-source atmospheric pressure chemical vapour deposition reactions of VCl4 or VOCl3 with tBuAsH2. Using the vanadium precursor VCl4, films were deposited at substrate temperatures of 550–600 °C, which were black-gold in appearance and were found to be metal-rich with high levels of chlorine incorporation. The use of VOCl3 as the vanadium source resulted in films being deposited between 450 and 600 °C and, unlike when using VCl4, were silver in appearance. The films deposited using VOCl3 demonstrated vanadium to arsenic ratios close to 1:1, and negligible chlorine incorporation. Films deposited using either vanadium precursor were identified as VAs using powder X-ray diffraction and possessed borderline metallic/semiconductor resistivities. - Highlights: • Formation of VAs films via atmospheric pressure chemical vapour deposition. • Films formed using VCl4 or VOCl3 and tBuAsH2. • Powder X-ray diffraction showed that crystalline VAs films were deposited. • Films from VOCl3 had a V:As ratio close to 1 with negligible Cl incorporation. • Films were silver and possessed borderline metallic/semiconductor resistivities

  17. A novel wide range, real-time neutron fluence monitor based on commercial off the shelf gallium arsenide light emitting diodes

    International Nuclear Information System (INIS)

    Displacement damage produced by high-energy neutrons in gallium arsenide (GaAs) light emitting diodes (LED) results in the reduction of light output. Based on this principle we have developed a simple, cost effective, neutron detector using commercial off the shelf (COTS) GaAs-LED for the assessment of neutron fluence and KERMA at critical locations in the vicinity of the 230 MeV proton therapy cyclotron operated by Westdeutsches Protonentherapiezentrum Essen (WPE). The LED detector response (mV) was found to be linear within the neutron fluence range of 3.0x108-1.0x1011 neutron cm-2. The response of the LED detector was proportional to neutron induced displacement damage in LED; hence, by using the differential KERMA coefficient of neutrons in GaAs, we have rescaled the calibration curve for two mono-energetic sources, i.e. 1 MeV neutrons and 14 MeV neutrons generated by D+T fusion reaction. In this paper we present the principle of the real-time GaAs-LED based neutron fluence monitor as mentioned above. The device was calibrated using fast neutrons produced by bombarding a thick beryllium target with 14 MeV deuterons from a TCC CV 28 medical cyclotron of the Strahlenklinik University Hospital Essen.

  18. Generation System of Concentrator Photovoltaic Based on Gallium Arsenide Cells%基于砷化镓电池的聚光光伏发电系统

    Institute of Scientific and Technical Information of China (English)

    宁铎; 王辉辉; 黄建兵; 李明勇

    2011-01-01

    Solar photovoltaic power generation system for the problem of low utilization, a generation system of concentrator photovoltaic (CPV) based on gallium arsenide (GaAs) cells can be designed. The system consists of concentrating power modules, solar tracking module, inverter module. Fresnel lens concentrator power generation module 400 times by concentrating light in lcm2 GaAs after the battery,the realization of power function; sun-tracking modules and optical sensors from the head to ensure that the basic vertical sunlight through the Fresnel lens; GaAs inverter module converts DC battery AC issued. After testing, the system reached 20. 2% conversion efficiency of solar, inverter part of the realization of the exchange function of the DC variable.%针对光伏发电系统中太阳能利用率低的问题,设计了一种基于砷化镓(GaAs)电池的聚光光伏(CPV)发电系统;该系统由聚光发电模块、太阳跟踪模块和逆变模块组成;聚光发电模块采用菲涅尔透镜400倍聚光以后照射在1Cmz的砷化镓电池上,实现发电功能;太阳跟踪模块由云台和光电传感器组成,保证太阳光基本垂直通过菲涅尔透镜,逆变模块将砷化镓电池发出的直流电转换成交流电;经过测试.该系统太阳能转换效率达到20.2%,逆变部分实现了直流变交流功能.

  19. Quantificaion of ion diffusion in gallium arsenide-based spintronic Light-Emitting Diode devices using time-of-flight secondary ion mass spectrometry

    Science.gov (United States)

    Cogswell, Jeffrey Ryan

    Depth profiling using Secondary Ion Mass Spectrometry (SIMS) is a direct method to measure diffusion of atomic or molecular species that have migrated distances of nanometers/micrometers in a specific material. For this research, the diffusion of Mn, sequentially Ga ions, in Gallium Arsenide (GaAs)-based spin Light Emitting Diode (LED) devices is studied by quantitative Time-of-Flight (ToF) SIMS. The goal is to prove conclusively the driving force and mechanism behind Mn diffusion in GaAs by quantifying the diffusion of these ions in each device. Previous work has identified two competing processes for the movement of Mn in GaAs: diffusion and phase separation. The process is dependent on the temperature the sample is exposed to, either by post-annealing, or during the molecular beam epitaxy (MBE) growth process. The hypothesis is that Manganese Arsenide (MnAs) is thermodynamically more stable than randomly distributed Mn ions in GaAs, and that by annealing at a certain temperature, a pure MnAs layer can be produced from a GaMnAs layer in a working spin LED device. Secondly, the spin efficiencies will be measured and the difference will be related to the formation of a pure MnAs layer. The first chapter of this dissertation discusses the history of spintronic devices, including details on the established methods for characterization, the importance for potential application to the semiconductor industry, and the requirements for the full implementation of spintronic devices in modern-day computers. MnAs and GaMnAs devices are studied, their preparation and properties are described, and the study's experimental design is covered in the latter part of Chapter 1. Chapter 2 includes a review of diffusion in semiconductors, including the types of diffusion, mechanisms they follow, and the different established experimental methods for studying diffusion. The later sections include summaries of Mn diffusion and previous studies investigating Mn diffusion in different

  20. Growing Gallium Arsenide On Silicon

    Science.gov (United States)

    Radhakrishnan, Gouri

    1989-01-01

    Epitaxial layers of high quality formed on crystal plane. Present work reports successful growth of 1- and 2-micrometer thick layers of n-type, 7-ohms per cm, 2-inch diameter, Si substrate. Growth conducted in Riber-2300(R) MBE system. Both doped and undoped layers of GaAs grown. Chamber equipped with electron gun and camera for in-situ reflection high-energy-electron diffraction measurements. RHEED patterns of surface monitored continuously during slow growth stage.

  1. (121,123)Sb and (75)As NMR and NQR investigation of the tetrahedrite (Cu12Sb4S13)--Tennantite (Cu12As4S13) system and other metal arsenides.

    Science.gov (United States)

    Bastow, T J; Lehmann-Horn, J A; Miljak, D G

    2015-10-01

    This work is motivated by the recent developments in online minerals analysis in the mining and minerals processing industry via nuclear quadrupole resonance (NQR). Here we describe a nuclear magnetic resonance (NMR) and NQR study of the minerals tennantite (Cu12As4S13) and tetrahedrite (Cu12 Sb4S13). In the first part NQR lines associated with (75)As in tennantite and (121,123)Sb isotopes in tetrahedrite are reported. The spectroscopy has been restricted to an ambient temperature studies in accord with typical industrial conditions. The second part of this contribution reports nuclear quadrupole-perturbed NMR findings on further, only partially characterised, metal arsenides. The findings enhance the detection capabilities of NQR based analysers for online measurement applications and may aid to control arsenic and antimony concentrations in metal processing stages. PMID:26453410

  2. Superconducting properties of iron–platinum–arsenides Ca{sub 10}(Pt{sub n}As{sub 8})(Fe{sub 2−x}Pt{sub x}As{sub 2}){sub 5} (n = 3, 4)

    Energy Technology Data Exchange (ETDEWEB)

    Tamegai, T., E-mail: tamegai@ap.t.u-tokyo.ac.jp [Department of Applied Physics, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Ding, Q.P.; Taen, T.; Ohtake, F.; Inoue, H.; Tsuchiya, Y.; Mohan, S.; Sun, Y.; Nakajima, Y.; Pyon, S. [Department of Applied Physics, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Kitamura, H. [Radiation Measurement Research Section, National Institute of Radiological Sciences, 4-9-1 Anagawa, Inage-ku, Chiba 263-8555 (Japan)

    2013-11-15

    Highlights: •Iron–platinum arsenides Ca{sub 10}(Pt{sub n}As{sub 8})(Fe{sub 2−x}Pt{sub x}As{sub 2}){sub 5} (n = 3, 4) have been grown and characterized. •Due to modest electromagnetic anisotropy, resistive transition shows broadening. •Magneto-optical imaging confirm homogeneous superconducting states. •Proton irradiation into n = 3 compound leads to T{sub c} suppression by ∼2 K and J{sub c} enhancement by a factor of three. -- Abstract: High-quality single crystals of iron–platinum arsenides Ca{sub 10}(Pt{sub n}As{sub 8})(Fe{sub 2−x}Pt{sub x}As{sub 2}){sub 5} (n = 3, 4) have been grown and their superconducting properties are characterized. The n = 4 and n = 3 compounds have T{sub c}’s ∼ 30 K and 13 K, respectively. Reflecting a modest anisotropy of the system, resistive transition for H//c-axis shows modest broadening in both systems. Magneto-optical imaging shows that superconductivity in both compounds is rather homogeneous, with the critical current density, J{sub c}, ∼1 × 10{sup 5} A/cm{sup 2} at 5 K under self-field. Proton irradiation up to 4 × 10{sup 16} cm{sup −2} into n = 3 compound is found to have T{sub c} suppression by ∼2 K and J{sub c} enhancement by a factor of three at low temperatures.

  3. Barium iron arsenide, barium cobalt arsenide, barium nickel arsenide single crystals and superconductivity upon cobalt doping

    Energy Technology Data Exchange (ETDEWEB)

    Ronning, Filip [Los Alamos National Laboratory; Sefat, A S [ORNL; Mcguire, M M [ORNL; Sales, B [ORNL; Jin, R [ORNL; Mandrus, D [ORNL

    2009-01-01

    The crystal structure and physical properties of BaFe{sub 2}As{sub 2}, BaCo{sub 2}As{sub 2}, and BaNi{sub 2}As{sub 2} single crystals are surveyed. BaFe{sub 2}As{sub 2} gives a magnetic and structural transition at T{sub N} = 132(1) K, BaCo{sub 2}As{sub 2} is a paramagnetic metal, while BaNi{sub 2}As{sub 2} has a structural phase transition at T{sub 0} = 131 K, followed by superconductivity below {Tc} = 0.69 K. The bulk superconductivity in Co-doped BaFe{sub 2}As{sub 2} below {Tc} = 22 K is demonstrated by resistivity, magnetic susceptibility, and specific heat data. In contrast to the cuprates, the Fe-based system appears to tolerate considerable disorder in the transition metal layers. First principles calculations for BaFe{sub 1.84}Co{sub 0.16}As{sub 2} inter-band scattering due to Co is weak.

  4. New quaternary arsenide oxides with square planar coordination of gold(I) - structure, (197)Au Mössbauer spectroscopic, XANES and XPS characterization of Nd10Au3As8O10 and Sm10Au3As8O10.

    Science.gov (United States)

    Bartsch, Timo; Niehaus, Oliver; Johrendt, Dirk; Kobayashi, Yasuhiro; Seto, Makoto; Abdala, Paula M; Bartsch, Manfred; Zacharias, Helmut; Hoffmann, Rolf-Dieter; Gerke, Birgit; Rodewald, Ute Ch; Pöttgen, Rainer

    2015-03-28

    The quaternary gold(I) arsenide oxides Nd10Au3As8O10 and Sm10Au3As8O10 were synthesized in sealed quartz ampoules from the rare earth (RE) elements, their appropriate sesquioxides, arsenic, arsenic(III) oxide and finely dispersed gold at maximum annealing temperatures of 1223 K. Both structures were refined from X-ray single crystal diffractometer data at room temperature and at 90 K. Nd10Au3As8O10 and Sm10Au3As8O10 crystallize with a new structure type that derives from the BaAl4 structure through distortions and formation of ordered vacancies. The structures consist of stacked polycationic [RE10O10](10+) layers with oxygen in tetrahedral rare earth coordination and polyanionic [Au(I)3(As2)4](10-) layers with gold in square planar or rectangular planar coordination of four arsenic dumbbells (255 pm As1-As2). In contrast to the well known ionic rare earth oxide layers, the gold arsenide layers rather show covalent bonding and account for the metallic nature of these two new arsenide oxides. This is confirmed by electronic structure calculations and resistivity measurements. The oxidation state of gold was investigated by (197)Au Mössbauer, X-ray absorption near edge structure (XANES) and photoelectron (XPS) spectroscopy. Due to missing comparative gold arsenide compounds, the monovalent gold phosphide oxides RE2AuP2O were measured for comparison. The XANES measurements additionally comprise monovalent gold arsenides REAuAs2. The XPS study contains BaAuAs as reference compound instead. Combination of all data clearly indicates Au(I), which was not observed in square planar coordination up to now. Temperature dependent magnetic susceptibility data show Curie-Weiss paramagnetism for Nd10Au3As8O10 and no magnetic ordering down to 2.5 K. Sm10Au3As8O10 shows the typical Van Vleck type paramagnetism for samarium compounds along with a transition to an antiferromagnetically ordered state at TN = 8.6 K. PMID:25716906

  5. Non-stoichiometric nickel arsenides in nature: The structure of orcelite, Ni5−xAs2 (x = 0.25), from the Bon Accord oxide body, South Africa

    International Nuclear Information System (INIS)

    Highlights: • The structure of natural orcelite has been solved for the first time. • The non-stoichiometry for orcelite previously reported was confirmed. • Non-stoichiometry could cause disorder phenomena during the crystal growth. - Abstract: The crystal structure of the mineral orcelite, a rare nickel arsenide reported in the literature with the formula Ni5−xAs2 (with x = 0.23), was refined using intensity data collected from a crystal from the Bon Accord body, South Africa. This study revealed that the structure is hexagonal, space group P63mc, with a = 6.7922(2), c = 12.4975(5) Å, and V = 499.31(3) Å3. The refinement of an anisotropic model led to an R index of 0.028 for 412 independent reflections. The orcelite structure can be described as a distorted variant of the Pd5Sb2 structure. The smaller As atoms are in the centres of distorted tetragonal antiprisms, formed by only Ni atoms. The coordination sphere is completed with two additional Ni atoms opposite to the rectangular faces. Electron microprobe data carried out on the same crystal used for the structural study point to the following formula [on the basis of Σ(As + Fe + Sb)=2]: Ni4.75(As1.93Fe0.05Sb0.02). According to the high-quality structure refinement, the minor elements were found to replace As in the structure. An atomic position for Ni was found to be partially occupied (75%), thus confirming the non-stoichiometry for the mineral orcelite previously reported in literature. Such a deviation from the stoichiometry could represent the driving force favouring disorder phenomena during the growth of the mineral

  6. Non-stoichiometric nickel arsenides in nature: The structure of orcelite, Ni{sub 5−x}As{sub 2} (x = 0.25), from the Bon Accord oxide body, South Africa

    Energy Technology Data Exchange (ETDEWEB)

    Bindi, Luca, E-mail: luca.bindi@unifi.it [Dipartimento di Scienze della Terra, Università degli Studi di Firenze, via La Pira 4, I-50121 Firenze (Italy); Tredoux, Marian [Department of Geology, University of the Free State, Bloemfontein 9300 (South Africa); Zaccarini, Federica [Department of Applied Geosciences and Geophysics, University of Leoben, Peter Tunner str. 5, A-8700 Leoben (Austria); Miller, Duncan E. [Department of Geology, University of the Free State, Bloemfontein 9300 (South Africa); Garuti, Giorgio [Department of Applied Geosciences and Geophysics, University of Leoben, Peter Tunner str. 5, A-8700 Leoben (Austria)

    2014-07-15

    Highlights: • The structure of natural orcelite has been solved for the first time. • The non-stoichiometry for orcelite previously reported was confirmed. • Non-stoichiometry could cause disorder phenomena during the crystal growth. - Abstract: The crystal structure of the mineral orcelite, a rare nickel arsenide reported in the literature with the formula Ni{sub 5−x}As{sub 2} (with x = 0.23), was refined using intensity data collected from a crystal from the Bon Accord body, South Africa. This study revealed that the structure is hexagonal, space group P6{sub 3}mc, with a = 6.7922(2), c = 12.4975(5) Å, and V = 499.31(3) Å{sup 3}. The refinement of an anisotropic model led to an R index of 0.028 for 412 independent reflections. The orcelite structure can be described as a distorted variant of the Pd{sub 5}Sb{sub 2} structure. The smaller As atoms are in the centres of distorted tetragonal antiprisms, formed by only Ni atoms. The coordination sphere is completed with two additional Ni atoms opposite to the rectangular faces. Electron microprobe data carried out on the same crystal used for the structural study point to the following formula [on the basis of Σ(As + Fe + Sb)=2]: Ni{sub 4.75}(As{sub 1.93}Fe{sub 0.05}Sb{sub 0.02}). According to the high-quality structure refinement, the minor elements were found to replace As in the structure. An atomic position for Ni was found to be partially occupied (75%), thus confirming the non-stoichiometry for the mineral orcelite previously reported in literature. Such a deviation from the stoichiometry could represent the driving force favouring disorder phenomena during the growth of the mineral.

  7. Survey of potential markets for devices using Californium-252

    International Nuclear Information System (INIS)

    Potential applications for devices or systems containing 252Cf in the years from 1975 to 1980 are estimated. The estimated number of devices and associated business value were derived from a survey of 46 industrial, educational and governmental organizations conducted from Jan. to May, 1975. Applications for devices and systems based on 252Cf are expected to increase by a factor of 7 in the 6-y period from 1975 to 1980. The annual business value of 252Cf devices should increase from 1.5 million dollars in 1975 to 10.8 million dollars in 1980. The potential European market should be several times as large as the US market, based on actual sales of 252Cf, which have been two to four times greater in Europe than in the US

  8. The protective cell petrus for the production of californium 252

    International Nuclear Information System (INIS)

    The alpha, beta, gamma, neutron cell which is described in the present paper is devoted to the transplutonium element production and study. It is located at the CEN in Fontenay-aux-Roses (France). The 4 feet ordinary concrete shielding made of stacked blocs allows the manipulation of radioactive sources as high as 1000 curies of 1 MeV gamma rays and with a fast neutrons flux of 109 n.cm-2.s-1. The airtight alpha containment box is equipped with two transfer systems, one consists of a parallelepiped shaped airtight box located in a turntable, the other uses standard cylindrical containers made of polyethylene. The general equipment and the main setting up are also described. (authors)

  9. Californium-252 neutron activation facility at the Savannah River Laboratory

    International Nuclear Information System (INIS)

    A neutron irradiation facility has been established to develop new analytical methods and for the support of research programs. A major component of this facility is a 252Cf source which provides both fission spectrum and thermal neutrons. (U.S.)

  10. Californium-252 brachytherapy for anal and ano-rectal carcinoma

    International Nuclear Information System (INIS)

    Surgery has historically been the standard treatment for anal, ano-rectal and rectal carcinoma but is prone to local or regional failure. Over the past 15 years there has been increasing interest in and success with radiation therapy and combined chemoradiotherapy for treatment of anal and ano-rectal cancers. Cf-252 brachytherapy combined with external beam teletherapy has been investigated for anal and ano-rectal lesions at the Univ. of Kentucky with encouraging results

  11. Mobile equipment for neutron radiography using a californium-252 source

    International Nuclear Information System (INIS)

    The basic requirements for successful neutron radiography are first summarised and the use of 252Cf is placed in perspective by comparing its properties with those of sources based on the Be (γ, n) and Be (α, n) reactions which have a broadly similar range of applications. The more essential design features of mobile neutron radiography equipment are next examined in some detail, to show how the often conflicting requirements of optimum beam production and adequate shielding may be reconciled. An assembly with a maximum dimension around 1 m with a source of 1 mg is used as an example. The design data used are reproduced in graphical form to permit designs to be scaled to suit the source available and the requirements. The selection of suitable image recorders for 252Cf radiography is discussed with the conclusion that the gadolinium foil-film combinations are likely to remain the normal choice. Demonstration radiographs are presented with particular reference to the location of residual casting sand in gas-cooled turbine blades. Finally, it is suggested that other applications for mobile 252Cf-based neutron radiography equipment will be found in the ordnance, aero-space, chemical and nuclear fuel manufacturing industries. (author)

  12. Automated absolute activation analysis with californium-252 sources

    Energy Technology Data Exchange (ETDEWEB)

    MacMurdo, K.W.; Bowman, W.W.

    1978-09-01

    A 100-mg /sup 252/Cf neutron activation analysis facility is used routinely at the Savannah River Laboratory for multielement analysis of many solid and liquid samples. An absolute analysis technique converts counting data directly to elemental concentration without the use of classical comparative standards and flux monitors. With the totally automated pneumatic sample transfer system, cyclic irradiation-decay-count regimes can be pre-selected for up to 40 samples, and samples can be analyzed with the facility unattended. An automatic data control system starts and stops a high-resolution gamma-ray spectrometer and/or a delayed-neutron detector; the system also stores data and controls output modes. Gamma ray data are reduced by three main programs in the IBM 360/195 computer: the 4096-channel spectrum and pertinent experimental timing, counting, and sample data are stored on magnetic tape; the spectrum is then reduced to a list of significant photopeak energies, integrated areas, and their associated statistical errors; and the third program assigns gamma ray photopeaks to the appropriate neutron activation product(s) by comparing photopeak energies to tabulated gamma ray energies. Photopeak areas are then converted to elemental concentration by using experimental timing and sample data, calculated elemental neutron capture rates, absolute detector efficiencies, and absolute spectroscopic decay data. Calculational procedures have been developed so that fissile material can be analyzed by cyclic neutron activation and delayed-neutron counting procedures. These calculations are based on a 6 half-life group model of delayed neutron emission; calculations include corrections for delayed neutron interference from /sup 17/O. Detection sensitivities of < or = 400 ppB for natural uranium and 8 ppB (< or = 0.5 (nCi/g)) for /sup 239/Pu were demonstrated with 15-g samples at a throughput of up to 140 per day. Over 40 elements can be detected at the sub-ppM level.

  13. Californium-based neutron radiography for corrosion detection in aircraft

    International Nuclear Information System (INIS)

    In support of an overall program aimed at minimizing disassembly and reducing inspection time during aircraft maintenance, a series of projects has been carried out to determine the feasibility of applying neutron radiographic techniques to the nondestructive (NDT) inspection of aircraft and aircraft components. These investigations have clearly demonstrated the superiority of neutron radiography over all other NDT techniques in its ability to detect surface and subsurface corrosion in aircraft structure. This capability is particularly significant where the corrosion is hidden behind thick metallic structural members. The neutron radiographic technique has been applied successfully to detect corrosion in the wing tank of E-2C, C-130, and DC-9 aircraft; rear stabilators of F-4 and F-111 aircraft; aft spar, starboard and port wing, and rudder of the F-8; fuselage skin of the 727; rotary blades of AH-1 and SH-3 helicopters; rotary tail flaps of the UH-2 helicopter; and nose landing gear of A-7 aircraft

  14. Automated absolute activation analysis with californium-252 sources

    International Nuclear Information System (INIS)

    A 100-mg 252Cf neutron activation analysis facility is used routinely at the Savannah River Laboratory for multielement analysis of many solid and liquid samples. An absolute analysis technique converts counting data directly to elemental concentration without the use of classical comparative standards and flux monitors. With the totally automated pneumatic sample transfer system, cyclic irradiation-decay-count regimes can be pre-selected for up to 40 samples, and samples can be analyzed with the facility unattended. An automatic data control system starts and stops a high-resolution gamma-ray spectrometer and/or a delayed-neutron detector; the system also stores data and controls output modes. Gamma ray data are reduced by three main programs in the IBM 360/195 computer: the 4096-channel spectrum and pertinent experimental timing, counting, and sample data are stored on magnetic tape; the spectrum is then reduced to a list of significant photopeak energies, integrated areas, and their associated statistical errors; and the third program assigns gamma ray photopeaks to the appropriate neutron activation product(s) by comparing photopeak energies to tabulated gamma ray energies. Photopeak areas are then converted to elemental concentration by using experimental timing and sample data, calculated elemental neutron capture rates, absolute detector efficiencies, and absolute spectroscopic decay data. Calculational procedures have been developed so that fissile material can be analyzed by cyclic neutron activation and delayed-neutron counting procedures. These calculations are based on a 6 half-life group model of delayed neutron emission; calculations include corrections for delayed neutron interference from 17O. Detection sensitivities of 239Pu were demonstrated with 15-g samples at a throughput of up to 140 per day. Over 40 elements can be detected at the sub-ppM level

  15. Efficient injection of spin-polarized electrons from manganese arsenide contacts into aluminum gallium arsenide/gallium arsenide spin LEDs

    Science.gov (United States)

    Schweidenback, Lars

    In this thesis we describe two spectroscopic projects project on semiconductor heterostructures, as well as putting together and testing a micro-photoluminescence/7 tesla magnet system for the study of micron size two-dimensional crystals. Below we discuss the three parts in more detail. i) MnAs-based spin light emitting diodes. We have studied the injection of spin-polarized electrons from a ferromagnetic MnAs contact into an AlGaAs(n)/GaAs(i)/AlGaAs(p) n-i-p light emitting diode. We have recorder the emitted electroluminescence as function of magnetic field applied at right angles to the device plane in the 7-300 K temperature range. It was found that at 7 Kelvin the emitted light is circularly polarized with a polarization that is proportional to the MnAs contact magnetization with a saturation value of 26% for B > 1.25 tesla. The polarization persists up to room temperature with a saturation value of 6%. ii) Optical Aharonov-Bohm effect in InGaAs quantum wells. The excitonic photoluminescence intensity from InGaAs quantum wells as function of magnetic field exhibits two local maxima superimposed on a decreasing background. The maxima are attributed to the optical Aharonov-Bohm effect of electrons orbiting around a hole localized at the center of an Indium rich InGaAs islands detected by cross sectional scanning tunneling microscopy. Analysis of the position of the maxima yields a value of the electron orbit radius. iii) Micro-Photoluminescence. We have put together a micro-photoluminescence /7 tesla system for the study of two dimensional crystals. The samples are placed inside a continuous flow cryostat whose tail is positioned in the bore of the 7 tesla magnet. A microscope objective is used to focus the exciting laser light and collect the emitted photoluminescence. The system was tested by recording the photoluminescence spectra of WS2 and WSe 2 monolayers at T = 77 K.

  16. Nonlocal ordinary magnetoresistance in indium arsenide

    International Nuclear Information System (INIS)

    Deflection of carriers by Lorentz force results in an ordinary magnetoresistance (OMR) of (μB)2 at low field. Here we demonstrate that the OMR in high mobility semiconductor InAs could be enhanced by measurement geometry where two probes of voltmeter were both placed on one outer side of two probes of current source. The nonlocal OMR was 3.6 times as large as the local one, reaching 1.8×104% at 5 T. The slope of the linear field dependence of the nonlocal OMR was improved from 12.6 T−1 to 45.3 T−1. The improvement was ascribed to polarity-conserved charges accumulating on boundaries in nonlocal region due to Hall effect. This InAs device with nonlocal geometry could be competitive in B-sensors due to its high OMR ratio, linear field dependence and simple structure. - Highlights: • Ordinary magnetoresistance could be enhanced by nonlocal geometry by 3.6 times. • Linear field dependence at high field could be realized in nonlocal geometry. • Nonlocal MR was realized by polarity-conserved accumulating charges on boundaries • Nonlocal MR in InAs reached 1.8×104% at 5 T. • Nonlocal MR devices could be used in high-field sensing applications

  17. Phonon heat transport in gallium arsenide

    Indian Academy of Sciences (India)

    Richa Saini; Vinod Ashokan; B D Indu; R Kumar

    2012-03-01

    The lifetimes of quantum excitations are directly related to the electron and phonon energy linewidths of a particular scattering event. Using the versatile double time thermodynamic Green’s function approach based on many-body theory, an ab-initio formulation of relaxation times of various contributing processes has been investigated with newer understanding in terms of the linewidths of electrons and phonons. The energy linewidth is found to be an extremely sensitive quantity in the transport phenomena of crystalline solids as a collection of large number of scattering processes, namely, boundary scattering, impurity scattering, multiphonon scattering, interference scattering, electron–phonon processes and resonance scattering. The lattice thermal conductivities of three samples of GaAs have been analysed on the basis of modified Callaway model and a fairly good agreement between theory and experimental observations has been reported.

  18. Epitaxial growth dynamics in gallium arsenide

    Science.gov (United States)

    Ballestad, Anders

    The problem of a complete theory describing the far-from-equilibrium statistical mechanics of epitaxial crystal growth remains unsolved. Besides its academic importance, this problem is also interesting from the point of view of device manufacturing. In order to improve on the quality and performance of lateral nanostructures at the lengthscales required by today's technology, a better understanding of the physical mechanisms at play during epitaxial growth and their influence on the evolution of the large-scale morphology is required. In this thesis, we present a study of the morphological evolution of GaAs (001) during molecular beam epitaxy by experimental investigation, theoretical considerations and computational modeling. Experimental observations show that initially rough substrates smooth during growth and annealing towards a steady-state interface roughness, as dictated by kinetic roughening theory. This smoothing indicates that there is no need for a destabilizing step-edge barrier in this material system. In fact, generic surface growth models display a much better agreement with experiments when a weak, negative barrier is used. We also observe that surface features grow laterally, as well as vertically during epitaxy. A growth equation that models smoothing combined with lateral growth is the nonlinear, stochastic Kardar-Parisi-Zhang (KPZ) equation. Simulation fits match the experimentally observed surface morphologies quite well, but we argue that this agreement is coincidental and possibly a result of limited dynamic range in our experimental measurements. In light of these findings, we proceed by developing a coupled growth equations (CGE) model that describes the full morphological evolution of both flat and patterned starting surfaces. The resulting fundamental model consists of two coupled, spatially dependent rate equations that describe the interaction between diffusing adatoms and the surface through physical processes such as adatom diffusion, deposition, and incorporation and detachment at step edges. In the low slope, small amplitude limit, the CGE model reduces to a nonlinear growth equation similar to the KPZ equation. From this, the apparent applicability of the KPZ equation to surface shape evolution is explained. The CGE model is based on fundamental physical processes, and can therefore explain the underlying physics, as well as describe macroscopic pattern evolution during growth.

  19. Nonlocal ordinary magnetoresistance in indium arsenide

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Pan [School of Physical Science and Technology, Inner Mongolia University, Hohhot 010021 (China); Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Yuan, Zhonghui; Wu, Hao; Ali, S.S. [Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Wan, Caihua, E-mail: wancaihua@iphy.ac.cn [Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Ban, Shiliang, E-mail: slban@imu.edu.cn [School of Physical Science and Technology, Inner Mongolia University, Hohhot 010021 (China)

    2015-07-01

    Deflection of carriers by Lorentz force results in an ordinary magnetoresistance (OMR) of (μB){sup 2} at low field. Here we demonstrate that the OMR in high mobility semiconductor InAs could be enhanced by measurement geometry where two probes of voltmeter were both placed on one outer side of two probes of current source. The nonlocal OMR was 3.6 times as large as the local one, reaching 1.8×10{sup 4}% at 5 T. The slope of the linear field dependence of the nonlocal OMR was improved from 12.6 T{sup −1} to 45.3 T{sup −1}. The improvement was ascribed to polarity-conserved charges accumulating on boundaries in nonlocal region due to Hall effect. This InAs device with nonlocal geometry could be competitive in B-sensors due to its high OMR ratio, linear field dependence and simple structure. - Highlights: • Ordinary magnetoresistance could be enhanced by nonlocal geometry by 3.6 times. • Linear field dependence at high field could be realized in nonlocal geometry. • Nonlocal MR was realized by polarity-conserved accumulating charges on boundaries • Nonlocal MR in InAs reached 1.8×10{sup 4}% at 5 T. • Nonlocal MR devices could be used in high-field sensing applications.

  20. Optical Spectroscopy of Indium Gallium Arsenide/gallium Arsenide Quantum Wells

    Science.gov (United States)

    Adams, Stephen J. A.

    1992-01-01

    Available from UMI in association with The British Library. In_{rm x}Ga _{rm 1-x}As/GaAs quantum wells have been studied using optical and magneto -optical techniques. Photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopy have been used to determine the valence band offset in these heterostructures which was found to vary between 0.4 for wells with indium concentration x = 0.08 to 0.2 for wells with x = 0.21. An interband magneto-luminescence oscillation (IMLO) technique has been applied to the study of undoped 'multi-single' quantum well samples and the theoretically predicted peaked nature of the exciton binding energy as a function of well width has been observed for the first time in any material system. The conduction band effective mass was also determined in the same samples using Optically Detected Cyclotron Resonance (ODCR) and found to be constant over the range of well widths studied at a value close to that of the bulk, with a suitable correction for strain effects. This result was then combined with the IMLO data, fitted to the theory of Akimoto and Hasegawa, to deduce the hole mass as a function of well width, which was found to increase significantly in narrower wells. PL and PLE data was also obtained from modulation doped quantum wells. The PL involving transitions from highly populated subbands was found to be much broader than the PLE data from unpopulated subbands, where the transitions were strongly excitonic. Furthermore the PL linewidth in n-type samples was somewhat greater than that in p-type samples because of the difference in particle effective mass. Comparison of the Fermi energy deduced from PL in n-type samples with Hall and Shubnikov-de Haas measurements suggested an enhancement in the density-of -states over the value in undoped wells. Interesting effects were also observed in the quantum well luminescence arising from an interaction with GaAs deep levels in the barrier layers. A novel method was used to determine the effective mass renormalisation due to the presence of a two-dimensional electron gas in modulation-doped quantum wells. The technique took advantage of the presence, in the samples studied, of parity-allowed transitions between the two lowest conduction subbands and the lowest valence subband. Landau splittings were observed in the n_{rm c } = 1 to n_{rm v } = 1 recombination in PL and in the n _{rm c} = 2 to n _{rm v} = 1 recombination in PLE, and a comparison of the reduced masses derived from the two sets of Landau fans allowed the effective mass enhancement to be determined. Enhancements of the order of 20%, independent of magnetic field, have been observed in samples with well sheet carrier density of approximately 10^{12}cm ^{-2}.

  1. Galvanomagnetic Properties and Magnetic Domain Structure of Epitaxial Manganese Arsenide Films on Gallium ARSENIDE(001)

    Science.gov (United States)

    Park, Moon Chan

    We have studied galvanomagnetic properties and magnetic domain structure of epitaxial ferromagnetic MnAs thin films on GaAs(001) substrates by molecular beam epitaxy in the thickness range 20-200nm. Using data reported here on ordinary and extraordinary Hall effect to determine the field required for perpendicular saturation and using saturation magnetizations reported elsewhere, we determined the shape anisotropy constant in the basal plane of the hexagonal structure to be 3.7(0.6)times10 ^5 erg/cm^3 and the surface anisotropy constant to be -1.3(0.4) erg/cm^2. The negative sign indicates thin enough films will be perpendicularly magnetized. By using magnetic force microscopy on a 100 nm type-B MnAs film we found stripe domains with 180^circ Bloch walls parallel to the easy direction, thereby avoiding the hard c-axis, which in type-B is tilted up 39^circ. out of the film plane. The widths of the domains and the walls are 4.0(0.3) μm and 95(6) nm, respectively. Similar MFM results were obtained for a 100 nm type-A MnAs thin film having hard c-axis in plane, with an average domain width of 11.7(1.2) mum. This domain width agrees with a calculated value using the effective anisotropy constant data. Magnetoresistance versus field shows a linear past beyond the coercive field H _{c} (VSM value +/-324Oe) due to s-d electron scattering as explained by N. F. Mott. Peaks occur at the transition region observed in the vicinity of H_ {c} in the VSM hysteresis loop and are centered at about H_{c}. The peaks are attributed to electron scattering from the domain walls. The electrical resistance showed a rapid increase with temperature beginning about 5 degrees below the Curie temperature (40^circ C) caused by the change in crystal structure from hexagonal to orthorhombic. The resistivities are, respectively, 300(24) and 375(30) muOmega -cm. Comparison with bulk values indicates the large lower temperature value is partly due to the presence of some orthorhombic phase observed in x-ray studies.

  2. Clinical evaluation of dentin hypersensitivity treatment with the low intensity Gallium-Aluminum-Arsenide laser - AsGaAl Avaliação clínica do tratamento da hiperestesia dentinária com laser de baixa potência de Arseniato de Gálio-Alumínio - AsGaAl

    Directory of Open Access Journals (Sweden)

    Luciana Chucre Gentile

    2004-12-01

    Full Text Available The dentin hypersensitivity is a painful condition rather prevalent in the general population. There are several ways of treatment for such condition, including the low intensity lasers. The proposal of this study was to verify the effectiveness of the Gallium-Aluminum-Arsenide diode laser in the treatment of this painful condition, using a placebo as control. MATERIALS AND METHODS: Thirty-two patients were selected, 22 females and 10 males, with ages ranging from 20 to 52 years old. The 32 patients were randomly distributed into two groups, treated and control; the sample consisted of 68 teeth, 35 in the treated group and 33 in the control group. The treated group was exposed to six laser applications with intervals from 48 to 72 hours, and the control group received, as placebo, applications of a curing light. RESULTS: A significant reduction was observed in the pain condition between the initial phase and after six laser applications; however, such reduction could also be observed for the control group exposed to the placebo. CONCLUSION: Therapy with the low intensity Gallium-Aluminum-Arsenide laser - AsGaAl induces a statistically significant reduction in the painful condition after each application and between the beginning and end of treatment, although there was no statistically significant difference between the treated group (laser and the control group (placebo at the end of treatment and after the mediate evaluation results (after 6 weeks, this way impairing the real measurement of laser effectiveness and placebo effect.A hiperestesia dentinária trata-se de uma condição dolorosa bastante prevalente nas populações mundiais. Várias são as modalidades de tratamento para tal condição, entre elas, os lasers de baixa potência. A proposta deste estudo foi a de verificar a efetividade do laser de diodo de Arseniato de Gálio-Alumínio no tratamento desta condição dolorosa, utilizando-se um placebo como controle. MATERIAIS E M

  3. THE EFFECT OF GALLIUM-ARSENIDE LASER IRRADIATION ON ODONTOGENESIS

    OpenAIRE

    Eman Adnan Mustafa; Sausan Al Kawas

    2010-01-01

    The applications of lasers in dentistry show that dental structures react differently to various types of laser. This study explores the effect of gallium-arsenate (GaAs) laser radiation on rats’ incisor teeth.A total number of 20 rats, aged 1-21 days, are divided into five groups; one control group (4 rats) and four laser groups (a total of 16 rats). Laser groups were exposed to 60 seconds of laser radiation on alternate days from day 1 till day 19. The groups were sacrificed at different ag...

  4. Radiation annealing of gallium arsenide implanted with sulphur

    CERN Document Server

    Ardyshev, V M

    2002-01-01

    Sulfur ions were implanted in a semi-insulating GaAs. Photon annealing (805 deg C/(10-12) s) and the thermal one (800 deg C/30 min) were conducted under SiO sub 2 -films coating obtained by different ways. Contents of GaAs components in films were determined from Rutherford backscattering spectra; concentration profiles of electrons were measured by the voltage-capacitance method. Diffusion of sulfur was shown to go in two directions - to the surface and into bulk of GaAs. The first process was induced by vacancies that had been formed near the surface of semiconductors during the dielectric coating. The coefficient of the bulk-diffusion and diffusion-to-surface of sulfur ions under photon annealing was twice as much as that under thermal one. The doping efficiency was also larger

  5. Investigation of spin transport and accumulation in aluminum gallium arsenide

    Science.gov (United States)

    Misuraca, Jennifer

    This dissertation describes spin injection, transport, and detection experiments from Fe electrodes into a bulk AlGaAs channel. This semiconducting alloy is one of a class of persistent photoconductors, chosen as the spin transport medium because its carrier density can be tuned in a controlled manner via photoexcitation through the metal to insulator transition (MIT) in situ. This allows one to determine the dependence of spin lifetime on a variety of external parameters including carrier density, all on one sample. This research represents the first electrical spin-dependent measurements in this material and describes the dependence of the Hanle signal size and spin lifetime on bias, temperature, and carrier density. The photoexcitation needed to change the carrier density in this material comes from an infrared light-emitting diode (IR LED). The first step of this project was to characterize the new, highly Si doped Al0.3Ga 0.7As heterostructures, in order to determine how the illumination of the sample will affect the parameters of the material. To complete this study, Hall crosses were fabricated from the AlGaAs material and the transport properties were measured between 350 mK and 165 K. The resistivity, carrier density, and mobility were determined as a function of temperature for a variety of different illumination times. From this data, the MIT, scattering mechanisms, and the shape of the band tail of the density of states (DOS) were investigated. In fact, this is the first work to electrically probe the DOS in AlGaAs. Once the materials were characterized, they were used to fabricate lateral spin transport devices. Spin transport and accumulation were studied in detail via Hanle effect measurements, which measure the dephasing of electron spins in a perpendicular magnetic field. From these measurements, the spin lifetime of the material can be calculated, and is in the nanosecond range for all measured carrier densities. The spin lifetimes are measured using three distinct measurement configurations which all give consistent results. The dependence of spin lifetime and Hanle signal size are reported as a function of bias, temperature, and carrier density. This is the first spin transport experiment using a persistently photoconductive material as the spin transport channel in order to change the carrier density of the material in situ. The research in this dissertation successfully provides a framework for the continuation of spin injection and detection studies in this and other alloy semiconductors, and provides insight into how the spin lifetime depends on the doping levels in semiconductors.

  6. Gallium arsenide based surface plasmon resonance for glucose monitoring

    Science.gov (United States)

    Patil, Harshada; Sane, Vani; Sriram, G.; Indumathi, T. S; Sharan, Preeta

    2015-07-01

    The recent trends in the semiconductor and microwave industries has enabled the development of scalable microfabrication technology which produces a superior set of performance as against its counterparts. Surface Plasmon Resonance (SPR) based biosensors are a special class of optical sensors that become affected by electromagnetic waves. It is found that bio-molecular recognition element immobilized on the SPR sensor surface layer reveals a characteristic interaction with various sample solutions during the passage of light. The present work revolves around developing painless glucose monitoring systems using fluids containing glucose like saliva, urine, sweat or tears instead of blood samples. Non-invasive glucose monitoring has long been simulated using label free detection mechanisms and the same concept is adapted. In label-free detection, target molecules are not labeled or altered, and are detected in their natural forms. Label-free detection mechanisms involves the measurement of refractive index (RI) change induced by molecular interactions. These interactions relates the sample concentration or surface density, instead of total sample mass. After simulation it has been observed that the result obtained is highly accurate and sensitive. The structure used here is SPR sensor based on channel waveguide. The tools used for simulation are RSOFT FULLWAVE, MEEP and MATLAB etc.

  7. The effects of radiation on gallium arsenide radiation detectors

    International Nuclear Information System (INIS)

    Semi-insulating, undoped, liquid encapsulated Czochralski (SI-U LEC) GaAs detectors have been irradiated with 1 MeV neutrons, 24 GeV/c protons, and 300 MeV/c pions. The maximum fluences used were 6 x 1014, 3 x 1014, and 1.8 x 1014 particles/cm2, respectively. For all three types of irradiation, the charge collection efficiencies (cce) of the detector are reduced due to the reduction in the electron and hole mean free paths. Pion and proton irradiations produce a greater reduction in cce than neutron irradiation, with the pions having the greatest effect. The effect of annealing the detectors at room temperature, at 200 C and at 450 C with a flash lamp have been shown to reduce the leakage current and increase the cce of the irradiated detectors. The flash-lamp anneal produced the greatest increase in the cce from 26% to 70% by increasing the mean free path of the electrons. Two indium-doped samples were irradiated with 24 GeV/c protons and demonstrated no improvement over SI-U GaAs with respect to post-irradiation cce. (orig.)

  8. Radiative recombination and photon recycling in gallium arsenide solar cells

    Science.gov (United States)

    Lundstrom, M. S.; Melloch, M. R.; Lush, G. B.; Patkar, M. P.; Young, M.; Durbin, S. M.; Gray, J. L.; MacMillan, H. F.; Keyes, B. M.; Levi, D. H.; Ahrenkiel, R. K.

    1992-12-01

    This talk reviews experimental work to develop a detailed understanding of radiative recombination in n-GaAs. Photoluminescence decay studies of minority carrier lifetimes versus doping in n-GaAs are presented. We show that when the substrate is removed by etching, photon recycling is enhanced, and lifetimes increase by nearly a factor of 10. The doping-dependent absorption coefficient is measured, and detailed balance arguments are used to relate absorption and recombination. Modeling surfaces, verified by comparison with experiments, are used to examine the effects of recycling in conventional solar cells and to explore new design options.

  9. Ion implantation fabrication of gallium arsenide integrated optical components

    International Nuclear Information System (INIS)

    Proton implantation of n-type GaAs produces compensation of the free carriers in the implanted region. This compensation leads to a change in the refractive index of the implanted layer, making it suitable for optical waveguiding. Based upon the solid-state theories criteria presented, low-loss single-mode optical waveguides were developed. The results of this work include cutoff conditions and a relation for propagation loss versus substitute doping for both planar and channel waveguides at three particular wavelengths of interest. The design techniques are applicable for obtaining waveguide designs for the entire infrared range of 1 to 12 μm. These waveguides can then be used to form the integrated optical building block in a variety of optoelectronic device applications, such as the parallel-channel directional coupler analyzed as part of this work. Excellent agreement between theory and experiment was obtained. Results indicate that optimum optical and electrical properties can be obtained in planar and channel waveguides through use of the design and analysis techniques developed, and through careful control of implantation and substrate parameters

  10. Spontaneous low frequency oscillation studies in gallium arsenide fast photoconductors

    CERN Document Server

    Foulon, F; Brullot, B; Petit, P; Bergonzo, P; Rubbelynck, C

    1999-01-01

    We have investigated the influence of spontaneous low frequency oscillations (LFO, f approx 0.01 Hz) occurring at high electric field (>1 kV/cm) in resistive photoconductors (PCD) made from semi-insulating GaAs on the response of the PCDs under pulsed gamma-ray irradiation (E approx 1.2 MeV, tau sub F sub W sub H sub M =30 ns). The PCDs were fabricated using GaAs from five commercially available sources. The PCDs were irradiated with fission neutrons in order to reduce their response time down to less than 100 ps. The amplitude of the LFOs was found to be related to the carrier lifetime, and thus defect concentration in the GaAs material. It was larger for material exhibiting high carrier lifetime. Increasing the localised defect concentration, such as EL2 type defect, through GaAs irradiation with fission neutrons was found to decrease the amplitude of the LFOs. PCDs irradiated at high neutron doses (>1x10 sup 1 sup 5 neutrons/cm sup 2) showed no LFOs. It is suggested that interactions between the propagatin...

  11. Spontaneous low frequency oscillation studies in gallium arsenide fast photoconductors

    Energy Technology Data Exchange (ETDEWEB)

    Foulon, F.; Flicstein, J.; Brullot, B.; Petit, P.; Bergonzo, P.; Rubbelynck, C

    1999-07-01

    We have investigated the influence of spontaneous low frequency oscillations (LFO, f{approx}0.01 Hz) occurring at high electric field (>1 kV/cm) in resistive photoconductors (PCD) made from semi-insulating GaAs on the response of the PCDs under pulsed gamma-ray irradiation (E{approx}1.2 MeV, {tau}{sub FWHM}=30 ns). The PCDs were fabricated using GaAs from five commercially available sources. The PCDs were irradiated with fission neutrons in order to reduce their response time down to less than 100 ps. The amplitude of the LFOs was found to be related to the carrier lifetime, and thus defect concentration in the GaAs material. It was larger for material exhibiting high carrier lifetime. Increasing the localised defect concentration, such as EL2 type defect, through GaAs irradiation with fission neutrons was found to decrease the amplitude of the LFOs. PCDs irradiated at high neutron doses (>1x10{sup 15} neutrons/cm{sup 2}) showed no LFOs. It is suggested that interactions between the propagating domains and the highly defective GaAs bulk control the LFO characteristics. Gamma-ray sensitivity, in transient mode, versus bias voltage of PCDs was also found to be correlated to LFOs, showing that high-field behavior of GaAs can be used to predict the optimum operating bias of the PCDs.

  12. Spontaneous low frequency oscillation studies in gallium arsenide fast photoconductors

    International Nuclear Information System (INIS)

    We have investigated the influence of spontaneous low frequency oscillations (LFO, f∼0.01 Hz) occurring at high electric field (>1 kV/cm) in resistive photoconductors (PCD) made from semi-insulating GaAs on the response of the PCDs under pulsed gamma-ray irradiation (E∼1.2 MeV, τFWHM=30 ns). The PCDs were fabricated using GaAs from five commercially available sources. The PCDs were irradiated with fission neutrons in order to reduce their response time down to less than 100 ps. The amplitude of the LFOs was found to be related to the carrier lifetime, and thus defect concentration in the GaAs material. It was larger for material exhibiting high carrier lifetime. Increasing the localised defect concentration, such as EL2 type defect, through GaAs irradiation with fission neutrons was found to decrease the amplitude of the LFOs. PCDs irradiated at high neutron doses (>1x1015 neutrons/cm2) showed no LFOs. It is suggested that interactions between the propagating domains and the highly defective GaAs bulk control the LFO characteristics. Gamma-ray sensitivity, in transient mode, versus bias voltage of PCDs was also found to be correlated to LFOs, showing that high-field behavior of GaAs can be used to predict the optimum operating bias of the PCDs

  13. Gallium arsenide 55Fe X-ray-photovoltaic battery

    OpenAIRE

    Butera, S.; Lioliou, G; Barnett, A M

    2016-01-01

    The effects of temperature on the key parameters of a prototype GaAs 55Fe radioisotope X-ray microbattery were studied over the temperature range -20 °C to 70 °C. A p-i-n GaAs structure was used to collect the photons from a 254 Bq 55Fe radioisotope X-ray source. Experimental results showed that the open circuit voltage and the short circuit current decreased with increased temperature. The maximum output power and the conversion efficiency of the device decreased at higher temperatures. For ...

  14. a 9-BIT, Pipelined Gallium Arsenide Analog-Digital Converter

    Science.gov (United States)

    Breevoort, Cornelius Marius

    1992-01-01

    Excellent Short Take-Off and Landing (STOL) performance is achieved by Upper Surface Blowing (USB) aircraft as a result of mounting high by-pass turbofan engines over the forward part of the wing. High lift levels are generated by directing the engine exhaust over the wing upper surface to entrain additional airflow and by using the Coanda effect to turn the exhaust flow downward over a large radius "Coanda" flap. Commercial application of USB technology could reduce airport congestion and community noise if future configurations can be designed with economically acceptable cruise drag levels. An experimental investigation of the high speed aerodynamics of USB aircraft configurations has been conducted to accurately define the magnitude and causes of the powered configuration cruise drag. A highly instrumented wind tunnel model of a realistic USB configuration has been used which permitted parametric variations in the number and spanwise location of the nacelles and accurately modeled the engine power effects with turbofan propulsion simulators. The measured force data provides an accurate definition of the cruise drag penalty associated with each configuration and the constructed pressure contour plots provide detailed insight into their causes. It was found that the high speed aerodynamics of USB configurations is a complex interaction of jet induced and wing transonic flowfields. The presence of the nacelles on the wing upper surface created a severe drag penalty which increased with freestream Mach number, power setting and angle of attack. The more widely spaced two nacelle configurations exhibited improved flowfields at moderate Mach numbers but suffered from drag levels comparable to the baseline configuration for high speed cruise conditions. At high Mach numbers and power settings, all of the tested configurations displayed strong shocks and separated zones in the wing/nacelle junction regions. Detailed discussions of the causes of the cruise drag penalty and recommended future design improvements are presented.

  15. Nickel-gallium arsenide high-voltage power Schottky diodes

    Science.gov (United States)

    Ashkinazi, G.; Hadas, Tz.; Meyler, B.; Nathan, M.; Zolotarevski, L.; Zolotarevski, O.

    1993-01-01

    A power GaAs Schottky diode (SD) with a chemically deposited Ni barrier was designed, fabricated and tested. The diode has a reverse breakdown voltage VBR of 140 V, forward voltage drop VF (at 50 A/cm 2) of 0.7 V at 23°C, 0.5 V at 150°C and 0.3 V at 250°C, and reverse leakage current densities jR (at -50 V) of 0.1 μA/cm 2 at 23°C and 1 mA/cm 2 at 150°C. Calculated forward and reverse I- V characteristics using a simple self-consistent computer model are in good agreement with measured values. Calculated characteristics of a silicon SD with identical structure parameters, using the same model, show much poorer VBR, VF and jR values. The theoretical maximum value of VBR is physically limited by the largest allowed VF. For a V Fof ⋍1.6 V, V BR.maxis ⋍200 V in Si and ⋍800 simple technology allows manufacturing of large area GaAs Schottky diodes with average currents up to V in GaAs SDs. Our relatively 100 A.

  16. Thermophotovoltaic converters on indium arsenide-based compounds

    Science.gov (United States)

    Gevorkyan, V. A.; Aroutiounian, V. M.; Gambaryan, K. M.; Arakelyan, A. O.; Andreev, I. A.; Golubev, L. V.; Yakovlev, Yu. P.

    2007-03-01

    Thermophotovoltaic converters based on multicomponent solid solutions of III V compounds, specifically, InAsSbP/InAs heterostructures ( E g = 0.35 0.60 eV), that are intended for fabricating IR emitters heated to 1000 2000°C are studied. The use of such narrow-gap heterostructures makes it possible to advance the sensitivity of the elements into the long-wave range and utilize the thermal energy of low-temperature sources more efficiently. Fresh physical approaches to fabricating epitaxial quaternary InAs-based InAsSbP solid solutions with a low carrier concentration and heterostructures with sharp interfaces are presented. Quaternary InAsSbP solid solutions and other related heterostructures offer a number of advantages, such as the possibility of growing perfect structures lattice-matched with the substrate, stress-free interfaces, good electrical and photoelectrical properties (low dark currents and a high external quantum efficiency), and the possibility of flexibly controlling the energy gap by varying the composition of the solid solution. It is shown that InAsSbP films grown on an InAs substrate by liquid-phase epitaxy from supercooled liquid solution and liquid-phase electro-epitaxy with replenishment of liquid solution by growing layer components are uniform in composition and have a perfect crystal structure. Thermophotovolatic p-InAsSbP/ n-InAs diode-type heterostructures obtained by the above methods are found to have saturation dark currents close to theoretically predicted values and a wide range of spectral sensitivity, which makes them candidates for thermophotovoltaic elements.

  17. Nanoscale characterisation of electronic and spintronic nitrides and arsenides

    International Nuclear Information System (INIS)

    The limits of applicability of the nanoscale spatial resolution analysis techniques of EFTEM, CBED and dark field imaging as applied to ohmic contacts to AlGaN/GaN and Mn distribution within Ga1-xMnxAs epilayers are considered. EFTEM can be limited by acquisition times necessitating the post processing of images to compensate for sample drift. Complementary technique of assessment are required to address problems of peak overlaps in energy loss spectra or signal to noise problems for low elemental concentrations. The use of 002 dark field imaging to appraise Ga1-xMnxAs epilayers is demonstrated

  18. Long wavelength gallium indium nitrogen arsenide and gallium-indium-nitrogen-arsenic-antimony lasers on gallium arsenide

    Science.gov (United States)

    Ha, Wonill

    The boom in fiber optic communications has created a high demand for much lower cost lasers in the 1.3--1.6 mum wavelength range for both low cost vertical-cavity surface-emitting lasers (VCSELs) and high-power Raman pumps. This has led to the introduction of dilute nitrogen into GaInAs to reduce the bandgap sufficiently, resulting in a new long wavelength material grown on GaAs. This new material will provide a new platform for low cost and high-speed directly-modulated lasers that are essential for the rapid expansion of optical wide area networks, metro area networks, and local area networks. The requirements for these lasers are a broad operating temperature range (-10 to 90°C) and moderate output power (˜10 mW) in the fundamental mode. There is also a growing interest in higher power lasers, at similar wavelengths, as pumps for Raman amplifiers to expand the available bandwidth and increase power budgets. Research has shown that GaInNAs can be coherently lattice matched to GaAs while providing the proper bandgap energy. These GaAs-based lasers with dilute N can take advantage of the well-developed GaAs processing techniques and superior distributed Bragg reflector mirror technology for VCSELs. This thesis presents new structures utilizing GaNAs barriers and a new quantum well material, GaInNAsSb, to achieve long-wavelength optical emission in post-annealed material. This increase is accompanied by a blue-shift in the bandgap energy. As a result, the distinct challenge of this material system is to achieve high quality material with sufficiently long wavelength emission. Introduction of nitrogen into the barriers reduces the blue-shift of luminescence by suppressing nitrogen out-diffusion from the quantum wells and decreasing carrier confinement in the quantum wells. We utilize antimony, both incorporated into the crystal and used as a surfactant, to enable higher indium incorporation. GaNAs or GaNAsSb barriers also reduce the overall strain of the active region because high indium mole fraction quantum wells, GaInNAs and GaInNAsSb, are compressively strained and the GaNAs barriers are tensely strained. The Molecular Beam Epitaxial growth and demonstration of high-efficiency long-wavelength multiple quantum well GaInNAs(Sb) ridge-waveguide laser diodes using GaNAs(Sb) barriers on GaAs substrate and longer wavelength photoluminescence are described in this work. The wide wavelength range coverage and high output power of GaInNAs and GaInNAsSb lasers grown on GaAs developed in this thesis make these great candidates for both transmitters and optical amplifiers for telecommunications.

  19. Photoinduced Dissociation Of N-alkyl Bromides On Gallium Arsenide(110) And Gallium Arsenide(100) Electron And Fragment Dynamics

    CERN Document Server

    Khan, K A

    1999-01-01

    In this study we investigate the UV-initiated electron transfer and dissociation fragment dynamics of selected n-alkyl bromides physisorbed on single crystals of GaAs. By systematically varying different chemical and structural parameters of the adsorbate/substrate system we explore a number of fundamental questions regarding the basic physics and chemistry of photochemical processes on surfaces. Monolayers of methyl, ethyl and propyl bromide were deposited on the (110), Ga-terminated (100) and As- terminated (100) surfaces of GaAs without thermal decomposition at 80 K. Substrate-mediated electron transfer to the molecule, induced by exposure to UV light at 193, 248 and 351 nm, causes C-Br bond cleavage. The electron transfer dynamics of this mechanism are examined as a function of wavelength and molecular complexity of the adsorbate to better understand the flow of energy and charge across the adsorbate/substrate interface. The photodynamics of the alkyl fragments are studied using mass-, energy- and angle-r...

  20. Chemical mechanical polishing of Indium phosphide, Gallium arsenide and Indium gallium arsenide films and related environment and safety aspects

    Science.gov (United States)

    Matovu, John Bogere

    As scaling continues with advanced technology nodes in the microelectronic industry to enhance device performance, the performance limits of the conventional substrate materials such as silicon as a channel material in the front-end-of-the-line of the complementary metal oxide semiconductor (CMOS) need to be surmounted. These challenges have invigorated research into new materials such as III-V materials consisting of InP, GaAs, InGaAs for n-channel CMOS and Ge for p-channels CMOS to enhance device performance. These III-V materials have higher electron mobility that is required for the n-channel while Ge has high hole mobility that is required for the p-channel. Integration of these materials in future devices requires chemical mechanical polishing (CMP) to achieve a smooth and planar surface to enable further processing. The CMP process of these materials has been associated with environment, health and safety (EH&S) issues due to the presence of P and As that can lead to the formation of toxic gaseous hydrides. The safe handling of As contaminated consumables and post-CMP slurry waste is essential. In this work, the chemical mechanical polishing of InP, GaAs and InGaAs films and the associated environment, health and safety (EH&S) issues are discussed. InP removal rates (RRs) and phosphine generation during the CMP of blanket InP films in hydrogen peroxide-based silica particle dispersions in the presence and absence of three different multifunctional chelating carboxylic acids, namely oxalic acid, tartaric acid, and citric acid are reported. The presence of these acids in the polishing slurry resulted in good InP removal rates (about 400 nm min-1) and very low phosphine generation (surfaces (0.1 nm RMS surface roughness). The optimized slurry compositions consisting of 3 wt % silica, 1 wt % hydrogen peroxide and 0.08 M oxalic acid or citric acid that provided the best results on blanket InP films were used to evaluate their planarization capability of patterned InP-STI structures of 200 mm diameter wafers. Cross sectional scanning electron microscope (SEM) images showed that InP in the shallow trench isolation structures was planarized and scratches, slurry particles and smearing of InP were absent. Additionally, wafers polished at pH 6 showed very low dishing values of about 12-15 nm, determined by cross sectional SEM. During the polishing of blanket GaAs, GaAs RRs were negligible with deionized water or with silica slurries alone. They were relatively high in aq. solutions of H2O2 alone and showed a strong pH dependence, with significantly higher RRs in the alkaline region. The addition of silica particles to aq. H2O2 did not increase the GaAs RRs significantly. The evolution of arsenic trihydride (AsH3) during the dissolution of GaAs in aq. H2O2 solution was similarly higher in the basic pH range than in neutral pH or in the acidic pH range. However, no AsH3 was measured during polishing, evidently because of the relatively high water solubility of AsH3. The work done on InGaAs polishing shows that InGaAs RR trends are different from those observed for InP or GaAs. InGaAs RRs at pH 2 are higher than those at pH 10 and highest at pH 4. Dissolution rates (DRs), Fourier Transform Infrared Spectroscopy (FTIR), contact angles, X-Ray Photoelectron Spectroscopy (XPS), X-Ray Fluorescence Spectroscopy (XRF), zeta potential measurements and calculated Gibbs free energy changes of the reactions involved during polishing and gas formation were used to discuss the observed RRs and hydride gas generation trends and to propose the reaction pathways involved in the material removal and in hydride gas generation mechanisms.

  1. Capture cross section measurement analysis in the Californium-252 spectrum with the Monte Carlo method

    International Nuclear Information System (INIS)

    Absolute average capture cross sections of gold, thorium, tantalum, molybdenum, copper and strontium in 252Cf spontaneous fission neutron spectrum were simulated for two types of experiment setups preformed by Z. Dezso and J. Csikai and by L. Green. The experiments were simulated with MCNP5 using cross section data from the ENDF/B-VII.0 library. The determination of neutron backscattering was calculated with the use of neutron flagging. Correction factors to experimentally measured values were determined to obtain average cross sections in a pure 252Cf spontaneous fission spectrum. Influence of concrete wall thickness, air moisture and room size on the average cross section was analyzed. Correction factors amounted to about 30%. Corrected values corresponding to average cross sections in a pure 252Cf spectrum were calculated for 197Au, 232Th, 181Ta, 98Mo, 65Cu and 84Sr. Average cross sections were also calculated with the RR-UNC software using IRDFF-v.1.05 and ENDF/B-VII.0 libraries. The revised average radiative capture cross sections are 75.5±0.1 mb for 197Au, 87.0±1.6 mb for 232Th , 98.0±4.5 mb for 181Ta, 21.2±0.5 mb for 98Mo, 10.3±0.3 mb for 63Cu, and 34.9±6.5 mb for 84Sr. - Highlights: • Average capture cross sections in 252Cf spontaneous fission spectrum were simulated. • Calculations were done using MCNP5 code and ENDF/B-VII.0 library. • Correction factors for self-shielding and room return effects were taken into account. • The revised average radiative capture cross sections for different materials are published

  2. Multi-element neutron activation analysis of sediment using a californium-252 source

    International Nuclear Information System (INIS)

    The application of a 252Cf source to the neutron activation analysis of several elements in small (approximately 1.5 in. in dia) cores was studied using high-resolution gamma ray spectroscopy and manual data reduction. (U.S.)

  3. OER of californium-252 at low dose rate for growth inhibition in Vicia faba

    International Nuclear Information System (INIS)

    OER of 252Cf, at low dose rate, has been determined for growth inhibition in Vicia faba roots. A new strain ''BelB'' was used; it was found to be more resistant to prolonged anoxia. Two sets of linear 252Cf sources were used (linear activity 0.31 and 0.47 (μg.cm-1)) in somewhat different geometrical arrangements. The (n+γ) 252Cf dose rates at the level of the root tips were 0.11 and 0.13 Gy.h-1 respectively. The relative contribution of the γ component Dsub(γ) to the total absorbed dose Dsub(n+γ) at the level of the root tips was evaluated Dsub(γ)/Dsub(n+γ)=0.35 for the first source-geometry and 0.42 for the second source-geometry. The reference radiation was the γ emission of 192Ir, used in the same geometrical conditions and for similar irradiation times. Irradiations performed in aerobic and anoxic conditions were alternated. OER values of 1.4 +- 0.1 and 1.5 +- 0.1 were observed for the 252Cf emission with the first and second source-geometry respectively. The corresponding OER values for 192Ir were 2.3 +- 0.2 and 2.6 +- 0.1; the derived oxygen gain factors were then equal to 1.6 and 1.7 repectively

  4. 铟镓砷焦平面阵列在微光夜视应用中的潜力及前景%The Potential and Prospect of Indium Gallium Arsenide Focal Plane Array Applied to Low Light Level Night Vision

    Institute of Scientific and Technical Information of China (English)

    潘京生; 孙建宁; 金戈; 任玲; 毛汉祺; 顾燕; 郭一亮; 苏德坦

    2014-01-01

    得益于夜气辉在短波红外(SWIR)0.9~1.7μm波段的自然辐射数十倍强于夜天空在可见光和近红外(NIR)0.4~0.9μm波段的辐射,SWIR成像成为应用于微光条件下的成像探测的最佳选择,由晶格匹配In0.53Ga0.47As/InP制作InGaAs焦平面阵列(Focal Plane Array,FPA),灵敏于0.9~1.7μm波段,在整个响应波段具有超过70%的量子效率,和室温非制冷工作的极低的暗电流。通过减薄基底,还可将InGaAs FPA的短波限延伸至可见光波段的0.4μm。最近几年,超低暗电流、低读出噪声、大面阵和小像素尺寸的InGaAs FPA的开发取得了实质性的进展,特别是暗电流得到了数量级的降低,InGaAs FPA探测器已经显露出应用于微光夜视的极大潜力,并且还通过采用更复杂的温度相关的非均匀校正算法实现了无TEC的低功耗工作,基于超低噪声的密集阵列InGaAs FPA的SWIR成像技术有望成为新一代夜视技术的一个重要组成部份。%The shortwave infrared(SWIR)spectral irradiance in the 0.9μm to 1.7μm band which caused by night airglow is several ten times stronger than the irradiance in the visible and near infrared realm of 0.4μm to 0.9μm of the night sky, so SWIR imaging is the best choice for the imaging detection under low light level condition. The Indium Gallium Arsenide(InGaAs)focal plane array(FPA)sensors based on lattice matched In0.53Ga0.47As/InP is sensitive to SWIR light whose wavelength is from 0.9μm to 1.7μm, matching the spectral irradiance caused by night airglow, and have exceeded quantum efficiency of 70%over whole response spectral range, as well as with very low dark current while working at room temperature. Removing the InP substrate from the FPA allows extending cutoff wavelength to visible region of 0.4μm. The work on InGaAs FPA with ultra low dark current, low readout noise, large format and small pixel size has been progressing substantially in

  5. Efeito da terapia com laser de arsenieto de gálio e alumínio (660Nm sobre a recuperação do nervo ciático de ratos após lesão por neurotmese seguida de anastomose epineural: análise funcional Effect of gallium-aluminum-arsenide laser therapy (660Nm on recovery of the sciatic nerve in rats following neurotmesis lesion and epineural anastomosis: functional analysis

    Directory of Open Access Journals (Sweden)

    FA Reis

    2008-06-01

    Full Text Available CONTEXTUALIZAÇÃO: As lesões nervosas periféricas podem comprometer atividades diárias de um indivíduo e resultam em perda da sensibilidade e motricidade do território inervado. OBJETIVO: Com o intuito de acelerar os processos regenerativos, objetivou-se analisar a influência da aplicação do laser de arsenieto de gálio e alumínio (AsGaAl, 660Nm sobre a recuperação funcional do nervo ciático de ratos. MATERIAIS E MÉTODOS: O nervo ciático de 12 ratos Wistar foi submetido à lesão por neurotmese e anastomose epineural e divididos em dois grupos: controle e laserterapia. Após a lesão, utilizou-se o laser de GaAlAs, 660Nm, 4J/cm², 26,3mW, feixe de 0,63cm², em três pontos eqüidistantes sobre a lesão, por 20 dias. As impressões das pegadas dos animais foram obtidas antes e após (sete, 14 e 21 dias pós-operatórios o procedimento cirúrgico e calculou-se o índice funcional do ciático (IFC. RESULTADOS: A comparação do IFC não resultou em diferença significante (p>0,05 entre os grupos. CONCLUSÕES: Conclui-se que os parâmetros e métodos empregados na laserterapia demonstram resultados nulos sobre o IFC no período avaliado.CONTEXT: Peripheral nerve injuries result in sensory and motor losses in the innervated area and can hinder individuals’ daily activities. Objective: The objective was to analyze the influence of applying gallium-aluminum-arsenide (GaAlAs laser (660Nm on the functional recovery of the sciatic nerve in rats. METHODS: The sciatic nerve of 12 Wistar rats was subjected to injury consisting of neurotmesis and epineural anastomosis. The rats were divided into two groups: control and laser therapy. After the injury, a GaAlAs laser was used (660Nm, 4J/cm², 26.3mW and 0.63cm² beam at three equidistant points on the injury, for 20 days. Footprint impressions were obtained from the animals before and seven, 14 and 21 days after the surgical procedure and the sciatic functional index (SFI was calculated

  6. The determination of americium, curium and californium in biological samples by combined solvent extraction-liquid scintillation counting

    International Nuclear Information System (INIS)

    A method has been developed to extract Am, Cm and Cf from ashed biological samples dissolved in 8 M LiN03-10-2 M HN03 into a liquid/scintillation cocktail. This new method reduces tissue and instrument background and allows use of a larger sample for analysis than when using a commercial gelling cocktail. The extractant cocktail is 20% N,N,N-trioctyl-N-methylammonium chloride dissolved in toluene containing the scintillators p-terphenyl and 1,4-bis-2-(5-phenyl-oxazolyl)-benzene. Several different types of biological samples were analyzed and radionuclide recoveries greater than 90% were obtained in all cases. (author)

  7. Oxidation-reduction properties of americium, curium, berkelium, californium, einsteinium and fermium, and thermodynamic consequences for the 5f series

    International Nuclear Information System (INIS)

    The amalgamation of 5f elements from Am to Fm has been studied by using 241Am, 244Cm, 249Bk, 249Cf, 252Cf, 253Es, 254Es, 252Fm and 255Fm with two electrochemical methods, radiocoulometry and radiopolarography, perfectly adapted to investigate extremely diluted solutions when the concentration of electroactive species is as low as 10-16M. The theory of radiocoulometry has been developed in the general cases of reversible and irreversible electrode process. It has been used to interpret the experimental data on the kinetic curves of amalgamation, and to estimate the standard rate constant of the electrode process in complexing medium (citric). On the other hand the radiopolarographic method has been applied to study the mechanism of reduction at the dropping mercury electrode of cations M3+ in aqueous medium to the metal M with formation of amalgam. The results are exploited into two directions: 1- Acquisition of some data concerning the oxidation-reduction properties of elements from Am to Fm. Therefore the standard electrode E0 [M(III-0)] potentials for Bk, Cf and Es, and the standard electrode E0 [M(II-0)] potential for Fm are estimated and the relative stability of each oxidation state (from II to VII) of 5f elements is discussed; 2- Acquisition of unknown thermodynamic data on transcalifornium elements. Correlations between 4f and 5f elements are precised and some divergences appear for the second half of 4f and 5f series (i.e. for 65<=Z<=71 and 97<=Z<=103)

  8. Raman and absorption spectrophotometric studies of selected lanthanide, californium-doped lanthanide, and actinide trihalides in the solid state

    International Nuclear Information System (INIS)

    The solid-state absorption spectra of Cf(III) ions as a dopant in lanthanide trihalide hosts (LnCl3: Ln = Ce, Sm, and Y; LnBr3: Ln = Ce, Sm, Tb, and Y; LnI3: Ln = Ce and Y) have been recorded. The spectra of Cf(III) have been correlated with the various crystal structures. The phonon Raman spectra and solid-state absorption spectra of PmF3, PmCl3, PmBr3, and two crystal modifications of PmI3 have been recorded. Symmetry assignments have been made for the Raman-active bands for these trihalides and also the sesquioxide. The room-temperature absorption spectra have been correlated to crystal field effects. The symmetry assignments of the Raman-active phonon modes have been made based on polarized Raman spectra from single crystals of YF3-type orthorhombic TbF3 and PuBr3-type orthorhombic NdBr3. Raman spectra of other isostructural lanthanide compounds have been recorded and compared. Symmetry assignments for these compounds have been made by analogy to the single-crystal assignments. Raman spectra have been obtained and catalogued for a number of actinide compounds. Symmetry assignments have been made for the observed Raman-active phonon bands in this work based on the assignments made for isostructural lanthanide compounds. 29 figs., 22 tabs

  9. Optical Transitions in Highly Charged Californium Ions with High Sensitivity to Variation of the Fine-Structure Constant

    Science.gov (United States)

    Berengut, J. C.; Dzuba, V. A.; Flambaum, V. V.; Ong, A.

    2012-08-01

    We study electronic transitions in highly charged Cf ions that are within the frequency range of optical lasers and have very high sensitivity to potential variations in the fine-structure constant, α. The transitions are in the optical range despite the large ionization energies because they lie on the level crossing of the 5f and 6p valence orbitals in the thallium isoelectronic sequence. Cf16+ is a particularly rich ion, having several narrow lines with properties that minimize certain systematic effects. Cf16+ has very large nuclear charge and large ionization energy, resulting in the largest α sensitivity seen in atomic systems. The lines include positive and negative shifters.

  10. Optical transitions in highly-charged californium ions with high sensitivity to variation of the fine-structure constant

    CERN Document Server

    Berengut, J C; Flambaum, V V; Ong, A

    2012-01-01

    We study electronic transitions in highly-charged Cf ions that are within the frequency range of optical lasers and have very high sensitivity to potential variations in the fine-structure constant, alpha. The transitions are in the optical despite the large ionisation energies because they lie on the level-crossing of the 5f and 6p valence orbitals in the thallium isoelectronic sequence. Cf16+ is a particularly rich ion, having several narrow lines with properties that minimize certain systematic effects. Cf16+ has very large nuclear charge and large ionisation energy, resulting in the largest alpha-sensitivity seen in atomic systems. The lines include positive and negative shifters.

  11. AN INTEGRAL REACTOR PHYSICS EXPERIMENT TO INFER ACTINIDE CAPTURE CROSS-SECTIONS FROM THORIUM TO CALIFORNIUM WITH ACCELERATOR MASS SPECTROMETRY

    International Nuclear Information System (INIS)

    The principle of the proposed experiment is to irradiate very pure actinide samples in the Advanced Test Reactor (ATR) at INL and, after a given time, determine the amount of the different transmutation products. The determination of the nuclide densities before and after neutron irradiation will allow inference of effective neutron capture cross-sections. This approach has been used in the past and the novelty of this experiment is that the atom densities of the different transmutation products will be determined using the Accelerator Mass Spectroscopy (AMS) technique at the ATLAS facility located at ANL. It is currently planned to irradiate the following isotopes: 232Th, 235U, 236U, 238U, 237Np, 238Pu, 239Pu, 240Pu, 241Pu, 242Pu, 241Am, 243Am and 248Cm.

  12. Integral range, energy, residual range, and linear energy transfer distributions for Californium fission fragments in microelectronics materials

    International Nuclear Information System (INIS)

    This report discusses the advantages and limitations of using Cf-252 radiation sources for single event testing of microelectronics for space environments. Integral distributions for the range, energy, residual range, and linear energy transfer of Cf-252 fission fragments in absorber and microelectronic materials have been calculated. Techniques are suggested for determining when single event testing using Cf-252 is appropriate; also, techniques are given for estimating the saturation cross section and thresh old linear energy transfer from test data. 10 refs., 25 figs., 2 tabs

  13. Research and experimental work at Groote Schuur Hospital and the University of Cape Town using californium-252 sources

    International Nuclear Information System (INIS)

    Experiments have been undertaken to determine the high-LET and low-LET components of the absorbed dose from neutron beams. This is achieved by measuring the fluxes of the high-LET and low-LET radiations in a tissue-equivalent phantom individually and simultaneously using a scintillation probe fitted with a pulse shape discriminator. This system was successfully used with a 22 MeV neutron beam from the T(d,n) reaction and has been employed with 252Cf sources. Results obtained in the low-energy ranges (up to 3 MeV) indicate that the electron counts exceed the high-LET counts by a factor of 2 to 3. These results are related to the absorbed dose. Calculations have also been undertaken to establish whether the Paterson-Parker system could be used for the design of 252Cf treatments and the optimum needle activities to yield the desired dose. Experiments are under way to determine the variation of RBE and OER for 252Cf radiations around the source. The inhibition of root growth in Vicia Faba is being used to determine any such effects. Dose rates comparable to that employed in interstitial radiotherapy are being aimed at. A study of dose fractionation effects is also being undertaken. (author)

  14. In situ TEM observations of heavy ion damage in gallium arsenide

    International Nuclear Information System (INIS)

    Transmission electron microscopy experiments have been performed to investigate the lattice damage created by heavy-ion bombardments in GaAs. These experiments have been performed in situ by using the HVEM - Ion Accelerator Facility at Argonne National Laboratory. The ion bombardments (50 keV Ar+ and Kr+) and the microscopy have been carried out at temperatures ranging from 30 to 3000K. Ion fluences ranged from 2 x 1011 to 5 x 1013 ions cm-2. Direct-impact amorphization is observed to occur in both n-type and semi-insulating GaAs irradiated to low ion doses at 300K and room temperature. The probability of forming a visible defect is higher for low temperature irradiations than for room temperature irradiations. The amorphous zones formed at low temperature are stable to temperatures above 2500K. Post-implantation annealing is seen to occur at room temperature for all samples irradiated to low doses until eventually all visible damage disappears. 14 refs., 3 figs., 1 tab

  15. Density functional study of optical properties of beryllium chalcogenides compounds in nickel arsenide B8 structure

    International Nuclear Information System (INIS)

    The structural, electronic and optical properties of beryllium chalcogenides BeS, BeSe and BeTe using the full-potential linear augmented plane wave (FP-LAPW) method are investigated. The exchange-correlation energy within the local density approximation (LDA) and the generalized gradient approximation (GGA) are described. The Engel-Vosko (EVGGA) formalism is applied for electronic and optical properties. The structural parameters of our model and the transition pressure from zinc-blende (B3) to the NiAs (B8) phase are confirmed. It is found that these compounds have indirect band gaps except for BeTe in NiAs (B8) phase. The results of reflectivity, refractive index and optical dielectric functions of Be compounds are investigated. An agreement is found between our results and those of other theoretical calculations and the experimental data.

  16. Design and implementation of high sensitive CCD on gallium arsenide based miniaturized spectrometer

    Science.gov (United States)

    Zheng, Jiamin; Shen, Jianhua; Guo, Fangmin

    2013-08-01

    In this paper, a method on how to design and implement a miniaturized spectrometer with low-light-level (LLL) CCD on GaAs is introduced. The optical system uses a blazed grating as the dispersive element and a 1×64 CCD on GaAs as the sensor. We apply a highly integrated Cortex-M4 MCU (STM32F407), to build the data acquisition and analysis unit, providing Wi-Fi interface to communicate with the PC software. It can complete the tasks like data acquisition, digital filtering, spectral display, network communication, human-computer interaction etc.

  17. Trapping of positron in gallium arsenide: evidencing of vacancies and of ions with a negative charge

    International Nuclear Information System (INIS)

    Vacancy type defects in Ga As as grown and irradiated by electrons are characterized by lifetime of positrons. Positron lifetime increases from 230 ps to 258 and 295 ps in presence of native vacancies in n type Ga As. Configuration of native vacancies changes when Fermi level crosses energy levels localized in the forbidden zone at 0.035eV and at 0.10eV from the bottom of the conduction band. Native vacancies are identified to arsenic vacancies with or without other point defects. Positron lifetime increases from 230 to 260 ps in presence of vacancies produced by low temperature irradiation negative ions are also produced. In irradiated Ga As, these ions trap positrons in competition with vacancies produced by irradiation, showing they have a negative charge. Two annealing zones between 180-300K and 300-600K are presented by vacancies. Ions do not anneal below ambient temperature. Vacancies and negative ions are identified respectively to gallium vacancies and gallium antisite

  18. Formation of defects at high temperature plastic deformation of gallium arsenide

    Energy Technology Data Exchange (ETDEWEB)

    Mikhnovich, V.V.

    2006-03-14

    The purpose of the present thesis consists in acquiring more concrete information concerning the mechanism of the movement of dislocations and types of defects that appear during the process of dislocation motion on the basis of systematic experimental studies of the GaAs deformation. Experimental studies concerning the dependence of the stress of the samples from their deformation at different values of the deformation parameters (like temperature and deformation speed) were conducted in this paper. To determine the concentration of defects introduced in samples during the deformation process the positron annihilation spectroscopy (PAS) method was used. The second chapter of this paper deals with models of movement of dislocations and origination of defects during deformation of the samples. In the third chapter channels and models of positron annihilation in the GaAs samples are investigated. In the forth chapter the used experimental methods, preparation procedure of test samples and technical data of conducted experiments are described. The fifth chapter shows the results of deformation experiments. The sixth chapter shows the results of positron lifetime measurements by the PAS method. In the seventh chapter one can find analyses of the values of defects concentration that were introduced in samples during deformation. (orig.)

  19. Spatially resolved localized vibrational mode spectroscopy of carbon in liquid encapsulated Czochralski grown gallium arsenide wafers

    International Nuclear Information System (INIS)

    Substitutional carbon on an arsenic lattice site is the shallowest and one of the most dominant acceptors in semi-insulating Liquid Encapsulated Czochralski (LEC) GaAs. However, the role of this acceptor in determining the well known ''W'' shape spatial variation of neutral EL2 concentration along the diameter of a LEC wafer is not known. In this thesis, we attempt to clarify the issue of the carbon acceptor's effect on this ''W'' shaped variation by measuring spatial profiles of this acceptor along the radius of three different as-grown LEC GaAs wafers. With localized vibrational mode absorption spectroscopy, we find that the profile of the carbon acceptor is relatively constant along the radius of each wafer. Average values of concentration are 8 x 10E15 cm-3, 1.1 x 10E15 cm-3, and 2.2 x 10E15 cm-3, respectively. In addition, these carbon acceptor LVM measurements indicate that a residual donor with concentration comparable to carbon exists in these wafers and it is a good candidate for the observed neutral EL2 concentration variation. 22 refs., 39 figs

  20. Optimization of the structure of gallium-arsenide-based detectors with taking into account recombination losses

    International Nuclear Information System (INIS)

    The model describing the physical processes accompanying the interaction of heavy charged particles with an ionizing-radiation semiconductor detector is proposed. The problem of optimization of electrical characteristics and construction of the detector cell is solved. The model makes it possible to calculate the output current of the detector as a function of its active-region's thickness and the voltage applied across the sensor under conditions of the presence of recombination processes.

  1. Studies on deep electronic levels in silicon and aluminium gallium arsenide alloys

    International Nuclear Information System (INIS)

    This thesis reports on investigations of the electrical and optical properties of deep impurity centers, related to the transition metals (TMs) Ti, Mo, W, V and Ni, in silicon. Emission rates, capture cross sections and photoionization cross sections for these impurities were determined by means of various Junction Space Charge Techniques (JSCTs), such as Deep Level Transient Spectroscopy (DLTS), dark capacitance transient and photo capacitance transient techniques. Changes in Gibbs free energy as a function of temperature were calculated for all levels. From this temperature dependence, the changes in enthalpy and entropy involved in the electron and hole transitions were deduced. The influence of high electric fields on the electronic levels in chalcogen-doped silicon were investigated using the dark capacitance transient technique. The enhancement of the electron emission from the deep centers indicated a more complex field enhancement model than the expected Poole-Frenkel effect for coulombic potentials. The possibility to determine charge states of defects using the Poole-Frenkel effect, as often suggested, is therefore questioned. The observation of a persistent decrease of the dark conductivity due to illumination in simplified AlGaAs/GaAs high Electron Mobility Transistors (HEMTs) over the temperature range 170K< T<300K is reported. A model for this peculiar behavior, based on the recombination of electrons in the two-dimensional electron gas (2DEG) located at the AlGaAs/GaAs interface with holes generated by a two-step excitation process via the deep EL2 center in the GaAs epilayer, is put forward

  2. Low-noise gallium-arsenide field-effect transistor preamplifiers for stochastic beam cooling systems

    International Nuclear Information System (INIS)

    The present noise performance, bandwidth capability and gain stability of bipolar and field-effect transistors, parametric amplifier, Schottky diode mixer and maser are summarized and compared in the 100 MHz to 40 GHz frequency range for stochastic beam cooling systems. Stability factor of GaAs FET's as a function of ambient temperature is presented and discussed. Performance data of several low-noise wide-band cryogenically cooled preamplifiers are presented including one with a noise figure of 0.35 dB over a bandwidth range of 150500 MHz operating at ambient temperature of 200K. Also, data are given on a broadband 1-2 GHz preamplifier having a noise figure of approximately 0.2 dB. The gain, operating noise temperature, stability, gain nonuniformity and phase-shift as function of frequency of interest for beam cooling systems are discussed

  3. Size-effects in indium gallium arsenide nanowire field-effect transistors

    Science.gov (United States)

    Zota, Cezar B.; Lind, E.

    2016-08-01

    We fabricate and analyze InGaAs nanowire MOSFETs with channel widths down to 18 nm. Low-temperature measurements reveal quantized conductance due to subband splitting, a characteristic of 1D systems. We relate these features to device performance at room-temperature. In particular, the threshold voltage versus nanowire width is explained by direct observation of quantization of the first sub-band, i.e., band gap widening. An analytical effective mass quantum well model is able to describe the observed band structure. The results reveal a compromise between reliability, i.e., VT variability, and on-current, through the mean free path, in the choice of the channel material.

  4. Electroreflectance of indium gallium arsenide phosphide lattice matched to indium phosphide

    International Nuclear Information System (INIS)

    We report the first systematic measurement of the electroreflectance spectra of In/sub u/Ga/sub 1-u/P/sub v/As/sub 1-v/ over the range of compositions that lattice-match InP substrates, at room temperature and for energies between 0.7 and 3.5 eV. Analysis of the spectra has enabled us to determine the composition dependence of E0, E0+Δ0, E1, E1+Δ1, Δ0, and Δ1. Experimentally determined values of E0, E0+Δ0, and m*/m0 have been used to predict the values of the g factors for these compounds

  5. Soft-mask fabrication of gallium arsenide nanomembranes for integrated quantum photonics

    CERN Document Server

    Midolo, Leonardo; Kiršanskė, Gabija; Stobbe, Søren

    2015-01-01

    We report on the fabrication of quantum photonic integrated circuits based on suspended GaAs membranes. The fabrication process consists of a single lithographic step followed by inductively-coupled-plasma dry etching through an electron-beam-resist mask and wet etching of a sacrificial layer. This method does not require depositing, etching, and stripping a hard mask, greatly reducing fabrication time and costs, while at the same time yielding devices of excellent structural quality. We discuss in detail the procedures for cleaning the resist residues caused by the plasma etching and present a statistical analysis of the etched feature size after each fabrication step.

  6. Soft-mask fabrication of gallium arsenide nanomembranes for integrated quantum photonics

    Science.gov (United States)

    Midolo, L.; Pregnolato, T.; Kiršanskė, G.; Stobbe, S.

    2015-12-01

    We report on the fabrication of quantum photonic integrated circuits based on suspended GaAs membranes. The fabrication process consists of a single lithographic step followed by inductively coupled-plasma dry etching through an electron-beam-resist mask and wet etching of a sacrificial layer. This method does not require depositing, etching, and stripping a hard mask, greatly reducing fabrication time and costs, while at the same time yielding devices of excellent structural quality. We discuss in detail the procedures for cleaning the resist residues caused by the plasma etching and present a statistical analysis of the etched feature size after each fabrication step.

  7. Structural and Magnetic Phase Transitions in Manganese Arsenide Thin-Films Grown by Molecular Beam Epitaxy

    Science.gov (United States)

    Jaeckel, Felix Till

    Phase transitions play an important role in many fields of physics and engineering, and their study in bulk materials has a long tradition. Many of the experimental techniques involve measurements of thermodynamically extensive parameters. With the increasing technological importance of thin-film technology there is a pressing need to find new ways to study phase transitions at smaller length-scales, where the traditional methods are insufficient. In this regard, the phase transitions observed in thin-films of MnAs present interesting challenges. As a ferromagnetic material that can be grown epitaxially on a variety of technologically important substrates, MnAs is an interesting material for spintronics applications. In the bulk, the first order transition from the low temperature ferromagnetic alpha-phase to the beta-phase occurs at 313 K. The magnetic state of the beta-phase has remained controversial. A second order transition to the paramagnetic gamma-phase takes place at 398 K. In thin-films, the anisotropic strain imposed by the substrate leads to the interesting phenomenon of coexistence of alpha- and beta-phases in a regular array of stripes over an extended temperature range. In this dissertation these phase transitions are studied in films grown by molecular beam epitaxy on GaAs (001). The films are confirmed to be of high structural quality and almost purely in the A0 orientation. A diverse set of experimental techniques, germane to thin-film technology, is used to probe the properties of the film: Temperature-dependent X-ray diffraction and atomic-force microscopy (AFM), as well as magnetotransport give insights into the structural properties, while the anomalous Hall effect is used as a probe of magnetization during the phase transition. In addition, reflectance difference spectroscopy (RDS) is used as a sensitive probe of electronic structure. Inductively coupled plasma etching with BCl3 is demonstrated to be effective for patterning MnAs. We show that the evolution of electrical resistivity in the coexistence regime of alpha- and beta-phase can be understood in terms of a simple model. These measurements allow accurate extraction of the order-parameter "phase fraction" and thus permit us to study the hysteresis of the phase transition in detail. Major features in the hysteresis can be correlated to the ordering observed in the array of alpha- and beta-stripes. As the continuous ferromagnetic film breaks up into isolated stripes of alpha-phase, a hysteresis in the out-of-plane magnetization is detected from measurements of the anomalous Hall effect. The appearance of out-of-plane domains can be understood from simple shape-anisotropy arguments. Remarkably, an anomaly of the Hall effect at low fields persists far into the beta-phase. Signatures of the more elusive beta- to gamma-transition are found in the temperature-dependence of resistivity, the out-of-plane lattice constant, and reflectance difference spectra. The transition temperature is significantly lowered compared to the bulk, consistent with the strained state of the material. The negative temperature coefficient of resistivity, as well as its anisotropic changes, lend support to the idea of an antiferromagnetic order within the beta-phase.

  8. Lattice constant variation and complex formation in zincblende gallium manganese arsenide

    Science.gov (United States)

    Schott, G. M.; Faschinger, W.; Molenkamp, L. W.

    2001-09-01

    We perform high resolution x-ray diffraction on GaMnAs mixed crystals as well as on GaMnAs/GaAs and GaAs/MnAs superlattices for samples grown by low-temperature molecular-beam epitaxy under different growth conditions. Although all samples are of high crystalline quality and show narrow rocking curve widths and pronounced finite thickness fringes, the lattice constant variation with increasing manganese concentration depends strongly on the growth conditions: For samples grown at substrate temperatures of 220 and 270 °C, the extrapolated relaxed lattice constant of Zincblende MnAs is 0.590 nm and 0.598 nm, respectively. This is in contrast to low-temperature GaAs, for which the lattice constant decreases with increasing substrate temperature.

  9. Lattice constant variation and complex formation in zincblende Gallium Manganese Arsenide

    OpenAIRE

    Schott, G. M.; Faschinger, W.; Molenkamp, L.W.

    2001-01-01

    We perform high resolution X-ray diffraction on GaMnAs mixed crystals as well as on GaMnAs/GaAs and GaAs/MnAs superlattices for samples grown by low temperature molecular beam epitaxy under different growth conditions. Although all samples are of high crystalline quality and show narrow rocking curve widths and pronounced finite thickness fringes, the lattice constant variation with increasing manganese concentration depends strongly on the growth conditions: For samples grown at substrate te...

  10. Ferromagnetism in indium manganese arsenide magnetic semiconductor thin films deposited by metalorganic vapor phase epitaxy

    Science.gov (United States)

    Blattner, Aaron J.

    The structure-property relationships of (In,Mn)As magnetic semiconductor thin films have been investigated to elucidate the mechanism of ferromagnetism and to assess its viability for use in spintronic device applications. Single phase, epitaxial (In,Mn)As films were deposited for the first time using atmospheric pressure metalorganic vapor phase epitaxy. The microstructure and phase composition of these films were determined using X-ray diffraction, transmission electron microscopy, and extended x-ray absorption fine structure measurements. Magnetic properties of the films were examined using superconducting quantum interference device magnetometery. Room temperature ferromagnetism was observed in single-phase In1-xMn xAs films with x ≤ 0.10. Magnetization measurements indicated that these (In,Mn)As samples had a transition temperature of 298--333 K. The Curie temperature was effectively independent of Mn concentration over the range of 1--10%. The temperature dependent magnetization along with the magnitude of the saturation magnetization and microstructural analysis indicated that the source of the high-temperature ferromagnetism in single-phase films is not attributable to MnAs nanoprecipitates. The Curie temperatures for these films are nearly constant for hole concentrations of 8 x 1017--1.6 x 1018 cm -3. In addition, the hole concentration is at least two orders of magnitude smaller than what is required under the conventional hole-mediated theory of ferromagnetism to obtain room-temperature ferromagnetism. Consequently, this model in its current form is not sufficient to describe the ferromagnetism in (In,Mn)As deposited using MOVPE. A model based upon interacting atomic scale ferromagnetic clusters was developed. The ferromagnetic coupling between these clusters may be a hole-mediated mechanism. This model of interacting ferromagnetic clusters was very successful in describing both the temperature and field dependence of the magnetization. In addition, this model is able to explain the high Curie temperatures and the Mn concentration independence of the Curie temperature in these (In,Mn)As films. This work has shown that the MOVPE deposited (In,Mn)As films are significantly different than those obtained by molecular beam epitaxy. The higher deposition temperature has been shown to significantly improve Mn solubility and allow for the formation of atomic scale clusters as predicted by recent theoretical calculations. These clusters stabilize the ferromagnetism to much higher temperatures than was previously observed in (In,Mn)As with random Mn substitution.

  11. Manipulating the magnetic anisotropy in the ferromagnetic semiconductor Gallium Manganese Arsenide

    OpenAIRE

    Casiraghi, Arianna

    2012-01-01

    Since its first successful growth in 1996, the ferromagnetic semiconductor (Ga,Mn)- As has had a great inuence on the research field of semiconductor spintronics. Among the outstanding characteristics of this material the large spin-orbit interaction for the holes in the valence band plays a major role, since it is responsible for some of the most interesting properties of (Ga,Mn)As, like the magnetocrystalline anisotropy, the magnetoelastic coupling and the extraordinary contributions to ...

  12. The electronic and structural properties of the silicon-gallium arsenide(110) interface

    Science.gov (United States)

    Dunstan, P. R.; Wilks, S. P.; Burgess, S. R.; Pan, M.; Williams, R. H.; Cammack, D. S.; Clark, S. A.

    1998-01-01

    The passivation properties of the Sisbnd GaAs(110) interface have been studied using scanning tunnelling microscopy/spectroscopy (STM/STS) and soft X-ray photoemission spectroscopy (SXPS). Silicon has been deposited at room temperature and STM images show the sub-monolayer growth of silicon islands on the GaAs substrate. The electrical properties of these islands together with the clean surface have been investigated using scanning tunnelling spectroscopy (STS). The spectroscopy clearly illustrates the difference in electrical properties between atomically flat regions of GaAs as compared to those containing defects or steps, i.e. where surface band bending occurs. We have investigated the use of sub-monolayer Si coverages to modify the electronic structure of the surface. Height variations of 3-4Åacross Si islands and 2Åacross steps on the GaAs surface have also been observed using the STM. STS spectra, collected simultaneously with the STM image, showed the Si to have semiconducting properties differing from that of crystalline Si and the GaAs substrate. Comparisons between the STM and STS results together with SXPS have provided a correlation between the structural, electrical and chemical nature of the Si/GaAs(110) interface.

  13. Double-Q spin-density wave in iron arsenide superconductors

    Science.gov (United States)

    Allred, J. M.; Taddei, K. M.; Bugaris, D. E.; Krogstad, M. J.; Lapidus, S. H.; Chung, D. Y.; Claus, H.; Kanatzidis, M. G.; Brown, D. E.; Kang, J.; Fernandes, R. M.; Eremin, I.; Rosenkranz, S.; Chmaissem, O.; Osborn, R.

    2016-05-01

    Elucidating the nature of the magnetic ground state of iron-based superconductors is of paramount importance in unveiling the mechanism behind their high-temperature superconductivity. Until recently, it was thought that superconductivity emerges only from an orthorhombic antiferromagnetic stripe phase, which can in principle be described in terms of either localized or itinerant spins. However, we recently reported that tetragonal symmetry is restored inside the magnetically ordered state of certain hole-doped compounds, revealing the existence of a new magnetic phase at compositions close to the onset of superconductivity. Here, we present Mössbauer data that show that half of the iron sites in this tetragonal phase are non-magnetic, establishing conclusively the existence of a novel magnetic ground state with a non-uniform magnetization that is inconsistent with localized spins. Instead, this state is naturally explained as the interference between two commensurate spin-density waves, a rare example of collinear double-Q magnetic order. Our results demonstrate the itinerant character of the magnetism of the iron pnictides, and the primary role played by magnetic degrees of freedom in determining their phase diagram.

  14. Online neutron fluence measurement at University Hospital Essen neutron therapy facility using gallium arsenide LEDs

    International Nuclear Information System (INIS)

    The detector and sensor group of the West German Proton Therapy Centre (WPE) has developed a novel real-time neutron fluence monitor based on tiny, inexpensive, commercially available GaAs-LEDs. The linear detection range for d(14)+Be neutrons was evaluated to be 5.0 × 108–2.0 × 1011 neutron.cm−2. However, this monitor can be used universally for neutrons of any energy distribution. Using scaling factors, fluence calibration curves for 1 MeV and 14 MeV D+T fusion neutrons have been calculated. The sensitivity of the detector increases with increasing neutron energy. This makes it suitable for the detection of high-energy neutrons, providing an extra advantage for use at a proton therapy facility where there is a high proportion of high-energy neutrons. The detector is practically not sensitive to photons. A prototype of the online GaAs-LED based neutron fluence monitor has been tested successfully at University Hospital Essen neutron therapy facility and will be implemented at WPE in the near future.

  15. The selective trapping of arsenic interstitial atoms by impurities in gallium arsenide

    International Nuclear Information System (INIS)

    Carbon doped GaAs is irradiated either with (a) fast neutrons (1 MeV) or (b) electrons (2 MeV). Complexes previously labelled C(1) are produced and the fine structure of the two LVM (infrared active localized vibrational mode) lines is discussed. A comparison is made with the BGa-Asi (boron impurity-interstitial arsenic) complex and it is concluded that the C(1) centre is a CAs-Asi (carbon acceptor-interstitial arsenic) defect. The defect dissociates at about 150 0C. (author)

  16. Superconductor-semiconductor-superconductor planar junctions of aluminium on DELTA-doped gallium arsenide

    DEFF Research Database (Denmark)

    Taboryski, Rafael Jozef; Clausen, Thomas; Kutchinsky, jonatan;

    1997-01-01

    We have fabricated and characterized planar superconductor-semiconductor-superconductor (S-Sm-S) junctions with a high quality (i.e. low barrier) interface between an n++ modulation doped conduction layer in MBE grown GaAs and in situ deposited Al electrodes. The Schottky barrier at the S...

  17. Growth and characterization of epitaxial aluminum layers on gallium-arsenide substrates for superconducting quantum bits

    Science.gov (United States)

    Tournet, J.; Gosselink, D.; Miao, G.-X.; Jaikissoon, M.; Langenberg, D.; McConkey, T. G.; Mariantoni, M.; Wasilewski, Z. R.

    2016-06-01

    The quest for a universal quantum computer has renewed interest in the growth of superconducting materials on semiconductor substrates. High-quality superconducting thin films will make it possible to improve the coherence time of superconducting quantum bits (qubits), i.e., to extend the time a qubit can store the amplitude and phase of a quantum state. The electrical losses in superconducting qubits highly depend on the quality of the metal layers the qubits are made from. Here, we report on the epitaxy of single-crystal Al (011) layers on GaAs (001) substrates. Layers with 110 nm thickness were deposited by means of molecular beam epitaxy at low temperature and monitored by in situ reflection high-energy electron diffraction performed simultaneously at four azimuths. The single-crystal nature of the layers was confirmed by ex situ high-resolution x-ray diffraction. Differential interference contrast and atomic force microscopy analysis of the sample’s surface revealed a featureless surface with root mean square roughness of 0.55 nm. A detailed in situ study allowed us to gain insight into the nucleation mechanisms of Al layers on GaAs, highlighting the importance of GaAs surface reconstruction in determining the final Al layer crystallographic orientation and quality. A highly uniform and stable GaAs (001)-(2× 4) reconstruction reproducibly led to a pure Al (011) phase, while an arsenic-rich GaAs (001)-(4× 4) reconstruction yielded polycrystalline films with an Al (111) dominant orientation. The near-atomic smoothness and single-crystal character of Al films on GaAs, in combination with the ability to trench GaAs substrates, could set a new standard for the fabrication of superconducting qubits.

  18. Simple inverted band structure model for cadmium arsenide (Cd3As2)

    International Nuclear Information System (INIS)

    The development of a simple Hamiltonian yielding the inverted band structure of Cd3As2 in the 4 mm (C4v12) low-temperature phase is proposed. The presented theory takes into account the spin orbit interaction and tetragonal distortion of lattice in the low symmetry. The authors obtain k-linear terms in the band structure and therefore a splitting in k-space of spin degenerate energy bands. The reported band model contains only one new crystal field parameter d = cr|Z> in addition to well known Kildal's set. The first evaluation of this shows that (0.028 < d < 0.072) eV using optical absorption edge data. The finite width of the anisotropic heavy and light hole bands is pointed out. (authors)

  19. Close-spaced vapor transport and photoelectrochemistry of gallium arsenide for photovoltaic applications

    Science.gov (United States)

    Ritenour, Andrew J.

    The high balance-of-system costs of photovoltaic installations indicate that reductions in absorber cost alone are likely insufficient for photovoltaic electricity to reach grid parity unless energy conversion efficiency is also increased. Technologies which both yield high-efficiency cells (>25%) and maintain low costs are needed. GaAs and related III--V semiconductors are used in the highest-efficiency single- and multi-junction photovoltaics, but the technology is too expensive for non-concentrated terrestrial applications. This is due in part to the limited scalability of traditional syntheses, which rely on expensive reactors and employ toxic and pyrophoric gas-phase precursors such as arsine and trimethyl gallium. This work describes GaAs films made by close-spaced vapor transport, a potentially scalable technique which is carried out at atmospheric pressure and requires only bulk GaAs, water vapor, and a temperature gradient to deposit crystalline films with similar electronic properties to GaAs prepared using traditional syntheses. Although close-spaced vapor transport of GaAs was first developed in 1963, there were few examples of GaAs photovoltaic devices made using this method in the literature at the onset of this project. Furthermore, it was unclear whether close-spaced vapor transport could produce GaAs films appropriate for use in photovoltaics. The goal of this project was to create and study GaAs devices made using close-spaced vapor transport and determine whether the technique could be used for production of grid-connected GaAs photovoltaics. In Chapter I the design of the vapor transport reactor, the chemistry of crystal growth, and optoelectronic characterization techniques are discussed. Chapter II focuses on compositional measurements, doping, and improved electronic quality in CSVT GaAs. Chapter III describes several aspects of the interplay between structure and electronic properties of photoelectrochemical devices. Chapter IV addresses heteroepitaxial growth of GaAs on "virtual" Ge-on-Si substrates. This is a topic of importance for the broader III--V community as well as the photovoltaic community, as Si is the substrate of choice in many areas of industry. This dissertation includes unpublished and previously published co-authored material.

  20. Electrical and photoelectrical properties of p-gallium arsenide-n-zinc selenide heterojunctions

    Energy Technology Data Exchange (ETDEWEB)

    Gaugash, P.V.; Kas' yan, V.A.; Korol' kov, V.I.; Rakhimov, N.K.

    1975-01-01

    Two types of p-GaAs-n-ZnSe heterojunctions were obtained by the method of liquid-phase epitaxy of GaAs from Sn solutions. One type had a thin high-resistance layer located near the interface in ZnSe, and the other type did not. The current--voltage and capacitance--voltage characteristics were studied at 77 to 430/sup 0/K. (WDM)

  1. Gallium arsenide digital integrated circuits for controlling SLAC CW-RF systems

    International Nuclear Information System (INIS)

    In order to fill the PEP and SPEAR storage rings with beams from the SLC linac and damping rings, precise control of the linac subharmonic buncher and the damping ring RF is required. Recently several companies have developed resettable GaAs master/slave D-type flip-flops which are capable of operating at frequencies of 3 GHz and higher. Using these digital devices as frequency dividers, one can phase shift the SLAC CW-RF systems to optimize the timing for filling the storage rings. We have evaluated the performance of integrated circuits from two vendors for our particular application. Using microstrip circuit techniques, we have built and operated in the accelerator several chassis to synchronize a reset signal from the storage rings to the SLAC 2.856 GHz RF and to phase shift divide-by-four and divide-by-sixteen frequency dividers to the nearest 350 psec bucket required for filling. 4 refs., 4 figs., 2 tabs

  2. Dual-band technology on indium gallium arsenide focal plane arrays

    Science.gov (United States)

    Dixon, Peter; Hess, Cory D.; Li, Chuan; Ettenberg, Martin; Trezza, John

    2011-06-01

    While InGaAs-based SWIR imaging technology has been improved dramatically over the past 10 years, the motivation remains to reduce Size Weight and Power (SWaP) for applications in Intelligence Surveillance and Reconnaissance (ISR). Goodrich ISR Systems, Princeton (Sensors Unlimited, Inc.) has continued to improve detector sensitivity. Additionally, SUI is working jointly with DRS-RSTA to develop innovative techniques for manufacturing dual-band focal planes to provide next generation technology for not only reducing SWaP for SWIR imagers, but also to combine imaging solutions for providing a single imager for Visible Near-SWIR (VNS) + LW imaging solutions. Such developments are targeted at reducing system SWaP, cost and complexity for imaging payloads on board UASs as well as soldier deployed systems like weapon sights. Our motivation is to demonstrate capability in providing superior image quality in fused LWIR and SWIR imaging systems, while reducing the total system SWaP and cost by enabling Short Wave and Thermal imaging in a single uncooled imager. Under DARPA MTO awarded programs, a LW bolometer (DRS-RSTA) is fabricated on a Short Wave (SW) InGaAs Vis-SWIR (SUI-Goodrich) Imager. The combined imager is a dual-band Sensor-Chip Assembly which is capable of imaging in VIS-SWIR + LW. Both DRS and Goodrich have developed materials and process enhancements to support these dual-band platform investigations. The two imagers are confocal and coaxial with respect to the incident image plane. Initial work has completed a single Read Out Integrated Circuit (ROIC) capable of running both imagers. The team has hybridized InGaAs Focal planes to 6" full ROIC wafers to support bolometer fabrication onto the SW array.

  3. Accurate determination of Curium and Californium isotopic ratios by inductively coupled plasma quadrupole mass spectrometry (ICP-QMS) in 248Cm samples for transmutation studies

    International Nuclear Information System (INIS)

    The French Atomic Energy Commission has carried out several experiments including the mini-INCA (INcineration of Actinides) project for the study of minor-actinide transmutation processes in high intensity thermal neutron fluxes, in view of proposing solutions to reduce the radiotoxicity of long-lived nuclear wastes. In this context, a Cm sample enriched in 248Cm (∼97 %) was irradiated in thermal neutron flux at the High Flux Reactor (HFR) of the Laue-Langevin Institute (ILL). This work describes a quadrupole ICP-MS (ICP-QMS) analytical procedure for precise and accurate isotopic composition determination of Cm before sample irradiation and of Cm and Cf after sample irradiation. The factors that affect the accuracy and reproducibility of isotopic ratio measurements by ICP-QMS, such as peak centre correction, detector dead time, mass bias, abundance sensitivity and hydrides formation, instrumental background, and memory blank were carefully evaluated and corrected. Uncertainties of the isotopic ratios, taking into account internal precision of isotope ratio measurements, peak tailing, and hydrides formations ranged from 0.3% to 1.3%. This uncertainties range is quite acceptable for the nuclear data to be used in transmutation studies.

  4. MANTRA: An Integral Reactor Physics Experiment to Infer Actinide Capture Cross-sections from Thorium to Californium with Accelerator Mass Spectrometry

    Energy Technology Data Exchange (ETDEWEB)

    G. Youinou; C. McGrath; G. Imel; M. Paul; R. Pardo; F. Kondev; M. Salvatores; G. Palmiotti

    2011-08-01

    The principle of the proposed experiment is to irradiate very pure actinide samples in the Advanced Test Reactor at INL and, after a given time, determine the amount of the different transmutation products. The determination of the nuclide densities before and after neutron irradiation will allow inference of effective neutron capture cross-sections. This approach has been used in the past and the novelty of this experiment is that the atom densities of the different transmutation products will be determined using the Accelerator Mass Spectrometry technique at the ATLAS facility located at ANL. It is currently planned to irradiate the following isotopes: 232Th, 235U, 236U, 238U, 237Np, 238Pu, 239Pu, 240Pu, 241Pu, 242Pu, 241Am, 243Am, 244Cm and 248Cm.

  5. Radiological Characterization Technical Report on Californium-252 Sealed Source Transuranic Debris Waste for the Off-Site Source Recovery Project at Los Alamos National Laboratory

    Energy Technology Data Exchange (ETDEWEB)

    Feldman, Alexander [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

    2014-04-24

    This document describes the development and approach for the radiological characterization of Cf-252 sealed sources for shipment to the Waste Isolation Pilot Plant. The report combines information on the nuclear material content of each individual source (mass or activity and date of manufacture) with information and data on the radionuclide distributions within the originating nuclear material. This approach allows for complete and accurate characterization of the waste container without the need to take additional measurements. The radionuclide uncertainties, developed from acceptable knowledge (AK) information regarding the source material, are applied to the summed activities in the drum. The AK information used in the characterization of Cf-252 sealed sources has been qualified by the peer review process, which has been reviewed and accepted by the Environmental Protection Agency.

  6. The development and medical applications of a simple facility for partial body in vivo neutron activation analysis using californium-252 sources

    International Nuclear Information System (INIS)

    A simple and cheap facility for partial body neutron activation analysis has been designed, based on the use of two 100 μg 252Cf neutron sources. The results reported show that calcium can be measured in parts of the body such as the tibia with a precision as good as +- 1.6 % for a radiation dose of 2 rem. The uniformity of the thermal neutron flux density is better than +- 3 % over 10 cm. Some applications of this irradiation facility for studies of trace elements, in particular cadmium in liver and aluminium in liver or brain, have also been explored. However, the sensitivity attainable is not yet sufficient for the study of normal levels, but could be of interest in toxicological investigations

  7. Accurate determination of Curium and Californium isotopic ratios by inductively coupled plasma quadrupole mass spectrometry (ICP-QMS) in Cm-248 samples for transmutation studies

    International Nuclear Information System (INIS)

    The French Atomic Energy Commission has carried out several experiments including the mini-INCA (Incineration of Actinides) project for the study of minor-actinide transmutation processes in high intensity thermal neutron fluxes, in view of proposing solutions to reduce the radiotoxicity of long-lived nuclear wastes. In this context, a Cm sample enriched in 248Cm (similar to 97%) was irradiated in thermal neutron flux at the High Flux Reactor (HFR) of the Laue-Langevin Institute (ILL). This work describes a quadrupole ICP-MS (ICP-QMS) analytical procedure for precise and accurate isotopic composition determination of Cm before sample irradiation and of Cm and Cf after sample irradiation. The factors that affect the accuracy and reproducibility of isotopic ratio measurements by ICP-QMS, such as peak centre correction, detector dead time, mass bias, abundance sensitivity and hydrides formation, instrumental background, and memory blank were carefully evaluated and corrected. Uncertainties of the isotopic ratios, taking into account internal precision of isotope ratio measurements, peak tailing, and hydrides' formations ranged from 0. 3% to 1. 3%. This uncertainties' range is quite acceptable for the nuclear data to be used in transmutation studies. (authors)

  8. MANTRA: An Integral Reactor Physics Experiment to Infer Actinide Capture Cross-sections from Thorium to Californium with Accelerator Mass Spectrometry

    International Nuclear Information System (INIS)

    The principle of the proposed experiment is to irradiate very pure actinide samples in the Advanced Test Reactor at INL and, after a given time, determine the amount of the different transmutation products. The determination of the nuclide densities before and after neutron irradiation will allow inference of effective neutron capture cross-sections. This approach has been used in the past and the novelty of this experiment is that the atom densities of the different transmutation products will be determined using the Accelerator Mass Spectrometry technique at the ATLAS facility located at ANL. It is currently planned to irradiate the following isotopes: 232Th, 235U, 236U, 238U, 237Np, 238Pu, 239Pu, 240Pu, 241Pu, 242Pu, 241Am, 243Am, 244Cm and 248Cm.

  9. Development of a unique laboratory standard indium gallium arsenide detector for the 500 to 1700 micron spectral region, phase 2

    Science.gov (United States)

    Ban, Vladimir S.; Olsen, Gregory H.

    1990-01-01

    In the course of this work, 5 mm diameter InGaAs pin detectors were produced which met or exceeded all of the goals of the program. The best results achieved were: shunt resistance of over 300 K ohms; rise time of less than 300 ns; contact resistance of less than 20 ohms; quantum efficiency of over 50 percent in the 0.5 to 1.7 micron range; and devices were maintained and operated at 125 C without deterioration for over 100 hours. In order to achieve the goals of this program, several major technological advances were realized, among them: successful design, construction and operation of a hydride VPE reactor capable of growing epitaxial layers on 2 inch diameter InP substrates with a capacity of over 8 wafers per day; wafer processing was upgraded to handle 2 inch wafers; a double layer Si3N4/SiO2 antireflection coating which enhances response over the 0.5 to 1.7 micron range was developed; a method for anisotropic, precisely controlled CH4/H2 plasma etching for enhancement of response at short wavelengths was developed; and electronic and optical testing methods were developed to allow full characterization of detectors with size and spectral response characteristics. On the basis of the work and results achieved in this program, it is concluded that large size, high shunt resistance, high quantum efficiency InGaAs pin detectors are not only feasible but also manufacturable on industrial scale. This device spans a significant portion of visible and near infrared spectral range and it will allow a single detector to be used for the 0.5 to 1.7 micron spectral region, rather than the presently used silicon (for 0.5 to 1.1 microns) and germanium (0.8 to 1.7 microns).

  10. Boron, bismuth co-doping of gallium arsenide and other compounds for photonic and heterojunction bipolar transistor devices

    Science.gov (United States)

    Mascarenhas, Angelo

    2015-07-07

    Isoelectronic co-doping of semiconductor compounds and alloys with acceptors and deep donors is sued to decrease bandgap, to increase concentration of the dopant constituents in the resulting alloys, and to increase carrier mobilities lifetimes. For example, Group III-V compounds and alloys, such as GaAs and GaP, are isoelectronically co-doped with, for example, B and Bi, to customize solar cells, and other semiconductor devices. Isoelectronically co-doped Group II-VI compounds and alloys are also included.

  11. Analysis of two-phonon infrared spectral features of gallium arsenide and indium phosphide by first-principles calculations

    International Nuclear Information System (INIS)

    We perform a self-consistent calculation based on density functional perturbation theory to analyze the infrared spectral features of GaAs and InP arising from two-phonon processes. The features are identified and assigned the critical points in the first Brillouin zone. Distribution of the critical points is investigated. The analysis demonstrates that collections of phonons of wave vectors around symmetry points and along symmetry lines are responsible for strong infrared features in two-phonon processes. (paper)

  12. Surfactant-assisted growth and properties of rare-earth arsenide InGaAs nanocomposites for terahertz generation

    Science.gov (United States)

    Salas, R.; Guchhait, S.; McNicholas, K. M.; Sifferman, S. D.; Dasika, V. D.; Jung, D.; Krivoy, E. M.; Lee, M. L.; Bank, S. R.

    2016-05-01

    We explore the effects of surfactant-mediated epitaxy on the structural, electrical, and optical properties of fast metal-semiconductor superlattice photoconductors. Specifically, application of a bismuth flux during growth was found to significantly improve the properties of superlattices of LuAs nanoparticles embedded in In0.53Ga0.47As. These improvements are attributed to the enhanced structural quality of the overgrown InGaAs over the LuAs nanoparticles. The use of bismuth enabled a 30% increase in the number of monolayers of LuAs that could be deposited before the InGaAs overgrowth degraded. Dark resistivity increased by up to ˜15× while carrier mobility remained over 2300 cm2/V-s and carrier lifetimes were reduced by >2× at comparable levels of LuAs deposition. These findings demonstrate that surfactant-mediated epitaxy is a promising approach to enhance the properties of ultrafast photoconductors for terahert generation.

  13. Ohmic contact formation process on low n-type gallium arsenide (GaAs) using indium gallium zinc oxide (IGZO)

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Seong-Uk [Samsung-SKKU Graphene Center and School of Electronics and Electrical Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Product and Test Engineering Team, System LSI Division, Samsung Electronics Co., Ltd, Yongin 446-711 (Korea, Republic of); Jung, Woo-Shik [Department of Electrical Engineering, Stanford University, Stanford, CA 94305 (United States); Lee, In-Yeal; Jung, Hyun-Wook; Kim, Gil-Ho [Samsung-SKKU Graphene Center and School of Electronics and Electrical Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Park, Jin-Hong, E-mail: jhpark9@skku.edu [Samsung-SKKU Graphene Center and School of Electronics and Electrical Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

    2014-02-01

    Highlights: • We propose a method to fabricate non-gold Ohmic contact on low n-type GaAs with IGZO. • 0.15 A/cm{sup 2} on-current and 1.5 on/off-current ratio are achieved in the junction. • InAs and InGaAs formed by this process decrease an electron barrier height. • Traps generated by diffused O atoms also induce a trap-assisted tunneling phenomenon. - Abstract: Here, an excellent non-gold Ohmic contact on low n-type GaAs is demonstrated by using indium gallium zinc oxide and investigating through time of flight-secondary ion mass spectrometry, X-ray photoelectron spectroscopy, transmission electron microscopy, J–V measurement, and H [enthalpy], S [entropy], Cp [heat capacity] chemistry simulation. In is diffused through GaAs during annealing and reacts with As, forming InAs and InGaAs phases with lower energy bandgap. As a result, it decreases the electron barrier height, eventually increasing the reverse current. In addition, traps generated by diffused O atoms induce a trap-assisted tunneling phenomenon, increasing generation current and subsequently the reverse current. Therefore, an excellent Ohmic contact with 0.15 A/cm{sup 2} on-current density and 1.5 on/off-current ratio is achieved on n-type GaAs.

  14. Low-noise gallium-arsenide field-effect transistor preamplifiers for stochastic beam-cooling systems

    International Nuclear Information System (INIS)

    The present noise performance, bandwidth capability and gain stability of bipolar and field-effect transistors, parametric amplifier, Schottky diode mixer and maser are summarized and compared in the 100 MHz to 40 GHz frequency range for stochastic beam cooling systems. Stability factor of GaAs FET's as a function of ambient temperature is presented and discussed. Performance data of several low-noise wide-band cryogenically cooled preamplifiers are presented including one with a noise figure of 0.35 dB over a bandwidth range of 150 to 500 MHz operating at ambient temperature of 200K. Also, data are given on a broadband 1 to 2 GHz preamplifier having a noise figure of approximately 0.2 dB. The gain, operating noise temperature, stability, gain nonuniformity and phase-shift as function of frequency of interest for beam cooling systems are discussed

  15. Deterministic control of the quantum properties of single indium arsenide artificial atoms with indium phosphide nanoscale architectures

    Science.gov (United States)

    Kim, Danny

    This thesis presents optical spectra of single InAs quantum dots on InP with an unprecedented signal-to-noise ratio and spectral resolution that has facilitated comprehensive characterization and made a significant contribution to their understanding. InAs quantum dots on InP are the leading contenders for a variety of quantum electrooptic devices that require wavelengths in the 1.5 mum range, most notably triggered single/entangled photon sources for quantum key distribution. As of yet, spectroscopic data for InAs on InP has only provided proof of emission, but no high quality data has been available, preventing any conclusive understanding of their properties. The work presented in this thesis dramatically improves upon previous reports by key optimizations at each experimental stage: growth, processing, and optical setup. The spectra clearly resolve, for the first time, the structure within the s-shell and p-shell, with fine resolution, allowing quantitative evaluation of exciton complexes such as trions, biexcitons, and triplet states. By measuring numerous dots, the behavioral trends of these species with respect to dot geometry is deduced. Also, for the first time, magnetic-field dependent spectra are obtained for individual InAs/InP dots. A remarkable discovery was the strong relation of the exciton g-factor to dot height. This thesis also demonstrates deterministic nanometer-scale control of the quantum dot dimensions---with the goal being to exploit the structure/quantum property relation in these dots. This was accomplished by using the apex of an in-situ grown nanoscale InP pyramid as a nucleation site. The dimension of this top (001) surface on which the dot nucleates is responsive to manometer-scale changes in the pyramid base dimensions, which can be precisely controlled with lithography. The InAs grown on top of these mesas then conform to the size, where the available area can be purposely relaxed or constrained. For similar height, the resulting dots have diameters larger or smaller as compared to dots formed on planar substrates, ultimately allowing control of the aspect ratio. Control of lateral dot dimensions is corroborated by SEM images and also by magneto-optical spectra, thereby demonstrating deterministic control of the quantum properties.

  16. Devices using ballistic transport of two dimensional electron gas in delta doped gallium arsenide high electron mobility transistor structures

    Science.gov (United States)

    Kang, Sungmu

    In this thesis, devices using the ballistic transport of two dimensional electron gas (2DEG) in GaAs High Electron Mobility Transistor(HEMT) structure is fabricated and their dc and ac properties are characterized. This study gives insight on operation and applications of modern submicron devices with ever reduced gate length comparable to electron mean free path. The ballistic transport is achieved using both temporal and spatial limits in this thesis. In temporal limit, when frequency is higher than the scattering frequency (1/(2pitau)), ballistic transport can be achieved. At room temperature, generally the scattering frequency is around 500 GHz but at cryogenic temperature (≤4K) with high mobility GaAs HEMT structure, the frequency is much lower than 2 GHz. On this temporal ballistic transport regime, effect of contact impedance and different dc mobility on device operation is characterized with the ungated 2DEG of HEMT structure. In this ballistic regime, impedance and responsivity of plasma wave detector are investigated using the gated 2DEG of HEMT at different ac boundary conditions. Plasma wave is generated at asymmetric ac boundary conditions of HEMTs, where source is short to ground and drain is open while rf power is applied to gate. The wave velocity can be tuned by gate bias voltage and induced drain to source voltage(Vds ) shows the resonant peak at odd number of fundamental frequency. Quantitative power coupling to plasma wave detector leads to experimental characterization of resonant response of plasma wave detector as a function of frequency. Because plasma wave resonance is not limited by transit time, the physics learned in this study can be directly converted to room temperature terahertz detection by simply reducing gate length(Lgate) to submicron for the terahertz application such as non destructive test, bio medical analysis, homeland security, defense and space. In same HEMT structure, the dc and rf characterization on device is also carried out in order to compare the conventional HEMT and plasma wave detector. Additionally in spatial limit, the ballistic transport is achieved when gate length is shorter than mean free path of electron. Using depletion gates in GaAs/AlGaAs structure, we make quasi one dimensional channel (quantum point contact) at cryogenic temperature and investigate dc and ac(rf frequency) of 2DEG in spatial ballistic transport.

  17. Investigation of Epitaxial Lift-Off Gallium Arsenide and Langmuir-Blodgett Films for Optoelectronic Device Applications

    Science.gov (United States)

    Shah, Divyang Manharlal

    Epitaxial lift-off (ELO), a technique of removing an epitaxially grown GaAs layer from its growth substrate by selective etching of an AlAs sacrificial layer, is described for field-effect transistor fabrication independent of the GaAs growth substrate. Metal Semiconductor Field-Effect Transistors (MESFETs) and High Electron Mobility Transistors (HEMTs) fabricated on silicon and sapphire substrates using ELO are investigated. A 0.1 μm gate length depletion mode MESFET made on silicon exhibited a unity current gain frequency f_{ rm t} = 34 GHz. Excellent device isolation with subpicoampere leakage currents is obtained. A high input impedance amplifier has been implemented on silicon substrate using ELO GaAs MESFETs. The amplifier had an input RC time constant limited bandwidth of 500 MHz. Results of investigation of a novel source of cadmium and zinc diffusion for shallow p^ {+}-n junction fabrication in In _{0.53}Ga_{0.47 }As/InP are also presented. Langmuir-Blodgett (LB) deposited monolayers of Cadmium and Zinc arachidate have been used as a source of Cd and Zn dopants in InGaAs/InP. This new source provides precise control of the dopant dose through the number of LB film monolayers deposited and it is also a safer method of handling toxic Cd. The LB film can be patterned by lift-off for a patterned diffusion without a mask. Highly doped (N_{ rm a}= 2-4 times 10^{19} cm^ {-3}), shallow (0.1-0.4 mu m) p^{+}-n junctions have been obtained. Junction field-effect transistors (JFETs) and PIN photodetectors have been fabricated as a demonstration of the usefulness of the technique. A PIN photodetector had a 100 pA dark current at -5 V DC bias and a bandwidth of 2 GHz. A new technique for fabricating optoelectronic integrated circuit (OEIC) photoreceivers for 1.3-1.55 μm wavelength optical communication has also been proposed. The proposed OEIC uses ELO GaAs MESFETs and InGaAs/InP PIN photodetectors.

  18. Ohmic contact formation process on low n-type gallium arsenide (GaAs) using indium gallium zinc oxide (IGZO)

    International Nuclear Information System (INIS)

    Highlights: • We propose a method to fabricate non-gold Ohmic contact on low n-type GaAs with IGZO. • 0.15 A/cm2 on-current and 1.5 on/off-current ratio are achieved in the junction. • InAs and InGaAs formed by this process decrease an electron barrier height. • Traps generated by diffused O atoms also induce a trap-assisted tunneling phenomenon. - Abstract: Here, an excellent non-gold Ohmic contact on low n-type GaAs is demonstrated by using indium gallium zinc oxide and investigating through time of flight-secondary ion mass spectrometry, X-ray photoelectron spectroscopy, transmission electron microscopy, J–V measurement, and H [enthalpy], S [entropy], Cp [heat capacity] chemistry simulation. In is diffused through GaAs during annealing and reacts with As, forming InAs and InGaAs phases with lower energy bandgap. As a result, it decreases the electron barrier height, eventually increasing the reverse current. In addition, traps generated by diffused O atoms induce a trap-assisted tunneling phenomenon, increasing generation current and subsequently the reverse current. Therefore, an excellent Ohmic contact with 0.15 A/cm2 on-current density and 1.5 on/off-current ratio is achieved on n-type GaAs

  19. Distribution of elastic strains appearing in gallium arsenide as a result of doping with isovalent impurities of phosphorus and indium

    Energy Technology Data Exchange (ETDEWEB)

    Pavlov, D. A. [Nizhni Novgorod Lobachevsky State University (Russian Federation); Bidus, N. V. [Nizhny Novgorod State University, Physicotechnical Research Institute (Russian Federation); Bobrov, A. I., E-mail: bobrov@phys.unn.ru [Nizhni Novgorod Lobachevsky State University (Russian Federation); Vikhrova, O. V. [Nizhny Novgorod State University, Physicotechnical Research Institute (Russian Federation); Volkova, E. I. [Nizhni Novgorod Lobachevsky State University (Russian Federation); Zvonkov, B. N. [Nizhny Novgorod State University, Physicotechnical Research Institute (Russian Federation); Malekhonova, N. V.; Sorokin, D. S. [Nizhni Novgorod Lobachevsky State University (Russian Federation)

    2015-01-15

    The distribution of elastic strains in a system consisting of a quantum-dot layer and a buried GaAs{sub x}P{sub 1−x} layer is studied using geometric phase analysis. A hypothesis is offered concerning the possibility of controlling the process of the formation of InAs quantum dots in a GaAs matrix using a local isovalent phosphorus impurity.

  20. Superconductivity and upper fields in Na-doped iron arsenides Eu1-xNaxFe2As2

    International Nuclear Information System (INIS)

    In this paper, we report a systematic investigation of the crystal structure and superconducting properties of iron-based superconductors Eu1-xNaxFe2As2 (x = 0-0.5). X-ray diffraction patterns indicate that the compounds form the ThCr2Si2-type structure with space group I4/mmm. The systematic evolution of the lattice constant demonstrates that the Eu ions are successfully replaced by Na. The use of alkali metal substitution into the Eu site allows us to suppress the magnetic/structural phase transition in the parent compounds and superconductivity reaches as high as 35 K with a doping level of x = 0.5. In addition, single crystals of Eu1-xNaxFe2As2 (x = 0, 0.5) have been successfully synthesized using the self-flux method. The upper critical fields have been determined with the magnetic field along the ab-plane and the c-axis, yielding an anisotropy of 1.7. The high upper critical fields and the low superconducting anisotropy of the Na-doped EuFe2As2 compounds indicate a potential for applications such as the generation of high magnetic fields. (paper)

  1. Estimation of various scattering parameters and 2-DEG mobilities from electron mobility calculations in the three conduction bands , L and X of gallium arsenide

    Indian Academy of Sciences (India)

    Sonal Singhal; A K Saxena; S Dasgupta

    2007-10-01

    The electron drift mobility in conduction band of GaAs has been calculated before, but for the first time, we have made attempts to estimate the electron mobilities in higher energy L and X minima. We have also calculated the value of mobility of two-dimensional electron gas needed to predict hetero-structure device characteristics using GaAs. Best scattering parameters have been derived by close comparison between experimental and theoretical mobilities. Room temperature electron mobilities in , L and X valleys are found to be nearly 9094, 945 and 247 cm2 /V-s respectively. For the above valleys, the electron masses, deformation potentials and polar phonon temperatures have been determined to be (0.067, 0.22, 0.39m 0 ), (8.5, 9.5, 6.5 eV), and (416, 382, 542 K) as best values, respectively. The 2-DEG electron mobility in minimum increases to 1.54 × 106 from 1.59 × 105 cm2 /V-s (for impurity concentration of 1014 cm-3) at 10 K. Similarly, the 2-DEG electron mobility values in L and X minima are estimated to be 2.28 × 105 and 1.44 × 105 cm2 /V-s at 10 K, which are about ∼ 4.5 and ∼ 3.9 times higher than normal value with impurity scattering present.

  2. Characterization of YBaCuO and ErBaCuO thin films deposited on silicon and gallium arsenide substrates

    International Nuclear Information System (INIS)

    YBaCuO and ErBaCuO films have been deposited on Si substrates with and without a ZrO/sub 2/ buffer layer and on GaAs substrates by RF diode sputtering from stoichiometric oxide targets. The films and interface between the films and semiconductor substrates are analyzed by Rutherford backscattering spectrometry (RBS), X-ray fluorescence spectroscopy (XRF), Auger electron spectroscopy (AES), energy dispersive X-ray spectrometry (EDAX), and scanning electron microscopy (SEM). The films grown on Si substrates with a ZrO/sub 2/ buffer layer show superconductivity above 65 K and no significant interaction at the interface is observed. High-T/sub c/ films can be obtained either by slow furnace annealing or by rapid heat-pulse annealing. No significant interaction is observed between YBaCuO (ErBaCuO) and GaAs after rapid thermal annealing at temperatures below 7500C

  3. Effect of Heat Treatment on Electrical Properties and Charge Collection Efficiency of X-Ray Sensors Based on Chrome-Compensated Gallium Arsenide

    Science.gov (United States)

    Zarubin, A. N.; Kolesnikova, I. I.; Lozinskaya, A. D.; Novikov, V. A.; Skakunov, M. S.; Tolbanov, O. P.; Tyazhev, A. V.; Shemeryankina, A. V.

    2016-06-01

    We present the results of experimental studies of the dependences of the specific resistance, charge collection efficiency, product of the mobility on the lifetime (μ×τ)n, and current-voltage characteristics on the heat treatment regimes of X-ray Me-GaAs:Cr-Me-sensors. Experimental samples were the pad-sensors with the area of 0.1-0.25 cm2 and sensitive-layer thickness in the range of 400-500 μm. The values of (μ×τ)n were evaluated by measuring the dependence of the charge collection efficiency on the bias voltage when exposed to gamma rays from the source of 241Am. It is shown that heat treatment in the temperature range 200-500°C does not lead to a significant degradation of properties of Me-GaAs:Cr-Me-sensors and can be used in the manufacturing technology of matrix detectors of ionizing radiation.

  4. Advanced radiation detector development: Advanced semiconductor detector development: Development of a oom-temperature, gamma ray detector using gallium arsenide to develop an electrode detector

    International Nuclear Information System (INIS)

    The advanced detector development project at the University of Michigan has completed the first full year of its current funding. Our general goals are the development of radiation detectors and spectrometers that are capable of portable room temperature operation. Over the past 12 months, we have worked primarily in the development of semiconductor spectrometers with open-quotes single carrierclose quotes response that offer the promise of room temperature operation and good energy resolution in gamma ray spectroscopy. We have also begun a small scale effort at investigating the properties of a small non-spectroscopic detector system with directional characteristics that will allow identification of the approximate direction in which gamma rays are incident. These activities have made use of the extensive clean room facilities at the University of Michigan for semiconductor device fabrication, and also the radiation measurement capabilities provided in our laboratory in the Phoenix Building on the North Campus. In addition to our laboratory based activities, Professor Knoll has also been a participant in several Department of Energy review activities held in the Forrestal Building and at the Germantown site. The most recent of these has been service on a DOE review panel chaired by Dr. Hap Lamonds that is reviewing the detector development programs supported through the Office of Arms Control and International Security

  5. Synergic phototoxic effect of visible light or Gallium-Arsenide laser in the presence of different photo-sensitizers on Porphyromonas gingivalis and Fusobacterium nucleatum

    Directory of Open Access Journals (Sweden)

    Habibollah Ghanbari

    2015-01-01

    Conclusion: Within the limitations of this study, the synergic phototoxic effect of visible light in combination with each of the photosensitizers on P. gingivalis and F. nucleatum. However, the synergic phototoxic effect of laser exposure and hydrogen peroxide and curcumin as photosensitizers on F. nucleatum was not shown.

  6. Materials Integration and Metamorphic Substrate Engineering from Silicon to Gallium Arsenide to Indium Phosphide for Advanced III-V/Silicon Photovoltaics

    Science.gov (United States)

    Carlin, Andrew M.

    Lattice-mismatched epitaxy in the III-V compound semiconductor system based on III-AsP and related alloys are of enormous importance, and considerable research interest, for many years. The reason is straightforward if one considers the limitations placed on available materials properties for devices dictated by lattice matching to the dominant substrate technologies - Si, GaAs (and/or Ge) and InP. For III-V epitaxy, the lattice constants of these substrates have defined a generation or more of device advances since growth of heterostructures possessing the same equilibrium lattice constants as the substrate yields essentially defect-free (specifically extended defect-free) materials and devices. Removing the restriction of lattice matching to current substrate technology opens a rich spectrum of bandgaps, bandgap combinations, conduction and valence band offsets, etc., that are desirable and exploitable for advancing device technologies for new functionality and greater performance. However successful exploitation of these properties requires mitigation of a variety of extended defects that result from the lattice mismatch between substrate and epitaxial heterostructures. A well known method to achieve this solution is through the use of compositionally (lattice constant-graded) buffer interlayers, in which the equilibrium lattice constants of interlayers are slowly altered by controlled changes in layer composition so that the mismatch strain between the initial substrate and the final device layers is spread across a thickness of buffer. The research accomplished has yielded success for both lattice constant ranges Si - GaAs and GaAs - InP. For the Si - GaAs system, a three step GaP nucleation process on Si has been developed and demonstrated, which maintains total avoidance of creating coalescence-related defects such as antiphase domains and stacking faults resulting from the initial III-V/IV interfaces while reducing overall threading dislocation density by ~10x, to a range of 1×107 cm-2, compared to current state of the art. This reduction can now enable future III-V/Si solar cells based on GaAsP metamorphic buffers in which the underlying Si substrate can participate as an active sub-cell, and such buffers have been demonstrated in this research. Second, in this same lattice constant range, novel GaP/SiGe interfaces on Si were grown and demonstrated to eliminate the small, but not negligible lattice misfit between GaP and Si, and provides a second pathway for future III-V/Si solar cell integration through subsequent metamorphic buffer growth. For the GaAs-InP range of lattice constants, multiple metamorphic buffer strategies, including those based on anion-specific quaternary GaInAsP, combinations of step and linearly-graded buffers, and buffers with multiple ternary alloys were all investigated. Micro-scale phase separation within quaternary anion-graded GaInAsP was identified as a mechanism to significantly inhibit proper lattice misfit strain relaxation, which was explained by thermodynamic arguments consistent with theoretical phase separation. This led to the creation of hybrid step and linearly graded InGaAs/InGaP metamorphic buffers through which phase separation was totally eliminated by avoiding specific compositions that were identified as sources for phase separation. These findings have enabled a realistic path for accessing the full range of bandgaps needed for future high efficiency III-V solar cells through optimized metamorphic III-V grading strategies.

  7. Optical and transient capacitance study of EL2 in the absence and presence of other midgap levels. [in gallium arsenide crystals

    Science.gov (United States)

    Skowronski, M.; Lagowski, J.; Gatos, H. C.

    1986-01-01

    A high-resolution optical study was carried out on GaAs crystals grown by horizontal Bridgman and liquid-encapsulated-Czochralski methods. An excellent correlation was found between the intensity of the 1.039-eV no-phonon line and the characteristic absorption of EL2, the major deep donor level in GaAs. A correlation was also found between the characteristic optical absorption of EL2 and its concentration as determined by junction capacitance measurements. The presence of EL0, another midgap level contained in heavily oxygen-doped crystals at concentration always less than those of EL2, had no effect on the optical spectra, but altered the capacitance measurements. Accordingly, an accurate calibration for the determination of EL2 by optical absorption was obtained from capacitance measurements on crystals containing only EL2; in this way the uncertainties introduced by other midgap levels were eliminated.

  8. Etch rates for (100) gallium arsenide using aqueous H2SO4:H2O2 and aqua regia based etchants

    International Nuclear Information System (INIS)

    Etch rate experiments were carried out for (100) GaAs using etching solutions of H2SO4 :H2O2 :H2 O (3:1:1, 3:1:15), HCl:HNO3 (3:1), HCl:HNO3 :H2 O (1:1:1) and HCl:HNO3 :glycerol (with various dilutions of glycerol). Several differences were seen for the (100) plane compared to previous results for other crystal orientations. The sulphuric acid solutions showed much lower activation energies for etching the (100) plane. The HCl:HNO3 :glycerol solutions showed considerably lower etch rates for the (100) plane, probably indicating that they etch GaAs anisotropically. For a 1:1:2 solution of HCl:HNO3 :glycerol a decrease in the etch rate of (100) GaAs was observed in the presence of stirring. This is the opposite result to what is commonly assumed for this polishing etchant. It indicates that the main polishing process attributed to this etchant is not present, and in fact, the polishing quality of the etchant is probably limited by the etching process which is present. 14 refs., 8 figs

  9. Inflammatory process decrease by gallium-aluminium-arsenide (GaAlAs) low intensity laser irradiation on postoperative extraction of impacted lower third molar

    International Nuclear Information System (INIS)

    This study aimed the observation of inflammatory process decrease by the use of GaAlAs Low Intensity Laser (λ=830 nm; 40 mW) irradiation. Five patients were selected and submitted to surgery of impacted lower third molars, both right and left sides at different occasions. On a first stage, a tooth of a random chosen side - right or left - was extracted by conventional surgery, without LILT. The inflammatory process was measured at postoperative on the first, third and seventh days. This side was then called 'control side'. After 21 days, period in which the inflammatory process of the first surgery was terminated, the other side surgery took place, this time using LILT (4 J at four spots) at postoperative, first and third days. As the previous surgery, the inflammatory process was also measured at postoperative on the first, third and seventh days. This side was called 'experimental or lased side'. The inflammatory process was evaluated by measuring its four characteristic signs: swelling, pain, color and temperature. It was clearly observed a decrease for swelling, pain and color on the lased side which presented significant inference and descriptive statistics. It can be concluded that GaAlAs Low Intensity Laser (λ=830 nm) can surely be used as an additional and important anti-inflammatory source on impacted lower third molar surgeries. (author)

  10. Molecular beam epitaxy of gallium arsenide antimonide-based ultra-high-speed double heterojunction bipolar transistors and light emitting transistors

    Science.gov (United States)

    Wu, Bing-Ruey

    In this work, GaAsSb-based double heterojunction bipolar transistors (DHBTs) and light emitting transistors (LETs) are grown using gas source molecular beam epitaxy (GSMBE). High-speed GaAs0.5Sb0.5/InP DHBTs are developed through the exercise of GSMBE growth optimization, device fabrication, and characterization. By adjusting the growth temperature and V/III flux ratio, the optimal conditions for growing GaAs0.5Sb0.5 base are found to be at high growth temperature and low V/III ratio. The switching sequence is also optimized so that the Sb segregation effect is minimized. By using GaAs0.5Sb0.5-In0.2Ga0.8As 0.7Sb0.3 compositional grading in the base of the GaAsSb/InP DHBT, a significant improvement of fT from 380 GHz to 500 GHz was achieved compared to a uniform GaAs0.5Sb 0.5 DHBT, while maintaining a high breakdown voltage BVCEO ˜ 4V. The cutoff frequency---breakdown voltage product, fT·BVCEO, of over 2000 GHz-V, is the record value for DHBTs of any material system. Incorporating graded InAs-InGaAs emitter contact layer is also shown to effectively reduce the total emitter resistance, further improving the DHBT high speed performance. LET characteristics with quantum wells (QWs) inserted into the base region of GaAsSb/InP DHBTs are also investigated and the preliminary results are presented. An LET with a tensile strained InGaAsSb/GaAs0.65Sb 0.35 DQW in the base was designed and achieved the emission wavelength of ˜1.6 mum, despite of its low light output intensity. The potential and limitation of realizing a transistor laser with an emission wavelength of 1.55 mum using GaAsSb/InP material system will be discussed.

  11. Single crystal growth and characterizations of iron arsenide superconductor BaFe2−xNixAs2 (0.0 ≤ x ≤ 0.12)

    International Nuclear Information System (INIS)

    A series of big single crystals of BaFe2−xNixAs2 have been prepared by the FeAs self-flux method, with nominal nickel doping x = 0–0.12. The dimensions of the cleaved crystals are over 10 mm along ab plane and ∼2 mm in maximum along the c direction. The measurements of x-ray diffraction, electrical resistance and magnetic property are carried out on the crystals. For the undoped parent compound BaFe2As2, both resistance and magnetization data display an anomaly associated with spin density wave and/or structural phase transition, with the transition temperatures at ∼138 K. For Ni-doped BaFe2−xNixAs2 crystals, the superconducting critical temperature Tc ranges from 4.3 K for x = 0.06 sample to 20 K for the optimally doped x = 0.10 crystal. (condensed matter: structure, thermal and mechanical properties)

  12. Freeze drying method for preparing radiation source material

    International Nuclear Information System (INIS)

    Fabrication of a neutron source is specifically claimed. A palladium/californium solution is freeze dried to form a powder which, through conventional powder metallurgy, is shaped into a source containing the californium evenly distributed through a palladium metal matrix. (E.C.B.)

  13. Review of RBE and OER values for Cf-neutrons

    International Nuclear Information System (INIS)

    Californium-252, an isotope emitting neutrons, gamma photons and alpha particles, is being investigated for its practical use in intracavitary and interstitial brachytherapy. A review of published RBE and OER values for californium neutrons as a function of dose rate for a variety of biological endpoints is given. (Auth.)

  14. Inelastic Neutron Scattering Study of a Nonmagnetic Collapsed Tetragonal Phase in Nonsuperconducting CaFe2As2: Evidence of the Impact of Spin Fluctuations on Superconductivity in the Iron-Arsenide Compounds

    Science.gov (United States)

    Soh, J. H.; Tucker, G. S.; Pratt, D. K.; Abernathy, D. L.; Stone, M. B.; Ran, S.; Bud'ko, S. L.; Canfield, P. C.; Kreyssig, A.; McQueeney, R. J.; Goldman, A. I.

    2013-11-01

    The relationship between antiferromagnetic spin fluctuations and superconductivity has become a central topic of research in studies of superconductivity in the iron pnictides. We present unambiguous evidence of the absence of magnetic fluctuations in the nonsuperconducting collapsed tetragonal phase of CaFe2As2 via inelastic neutron scattering time-of-flight data, which is consistent with the view that spin fluctuations are a necessary ingredient for unconventional superconductivity in the iron pnictides. We demonstrate that the collapsed tetragonal phase of CaFe2As2 is nonmagnetic, and discuss this result in light of recent reports of high-temperature superconductivity in the collapsed tetragonal phase of closely related compounds.

  15. Advanced radiation detector development: Advanced semiconductor detector development: Development of a room-temperature, gamma ray detector using gallium arsenide to develop an electrode detector. Annual progress report, September 30, 1994--September 29, 1995

    International Nuclear Information System (INIS)

    The advanced detector development project at the University of Michigan has completed the first full year of its current funding. The general goals are the development of radiation detectors and spectrometers that are capable of portable room temperature operation. Over the past 12 months, the authors have worked primarily in the development of semiconductor spectrometers with ''single carrier'' response that offer the promise of room temperature operation and good energy resolution in gamma ray spectroscopy. They have also begun a small scale effort at investigating the properties of a small non-spectroscopic detector system with directional characteristics that will allow identification of the approximate direction in which gamma rays are incident. These activities have made use of the extensive clean room facilities at the University of Michigan for semiconductor device fabrication, and also the radiation measurement capabilities provided in the laboratory in the Phoenix Building on the North Campus

  16. Advanced semiconductor detector development: Development of a room-temperature, gamma ray detector using gallium arsenide to develop an electrode detector. Progress report, September 30, 1994--September 29, 1995

    International Nuclear Information System (INIS)

    Devices fabricated from wide bandgap materials that can be operated without cooling suffer from poor energy resolution and are limited to very small volumes; this arises largely from poor hole mobility in compound semiconductors. Three different device configurations are being investigated for possibly overcoming this limitation: buried grid-single carrier devices, trenched single carrier devices, and devices using patterned coplanar electrodes (CdZnTe). In the first, leakage problems were encountered. For the second, a set of specifications has been completed, and electron cyclotron resonance etching will be done at an off-campus facility. For the third, Aurora will supply 3 different CdZnTe detectors. An analytical study was done of the patterned electrode approach

  17. Superconducting LaRu 2P 2 and other alkaline earth and rare earth metal ruthenium and osmium phosphides and arsenides with ThCr 2Si 2 structure

    Science.gov (United States)

    Jeitschko, W.; Glaum, R.; Boonk, L.

    1987-07-01

    The ThCr 2Si 2-type compounds MRu 2P 2 ( M = Ca, Sr, Ba, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Yb), MOs 2P 2 ( M = Sr, Ba, Eu), and MRu 2As 2 ( M = Ca, Sr, Ba, La, Eu) were prepared by sintering techniques and/or by reaction of the elemental components in a tin flux. The crystal structures of SrRu 2P 2 and LaRu 2P 2 were refined from single-crystal diffractometer data to residuals of R = 0.019 (224 structure factors, 11 variable parameters) and R = 0.028 (510 F's, 11 variables), respectively. LaRu 2P 2 is diamagnetic and becomes superconducting at 4.1 K. No transition to a superconducting state was observed down to 1.8 K for the compounds MFe 2P 2 ( M = Ca, Sr, Ba, La), MRu 2P 2 ( M = Ca, Sr, Ba, Y), and MOs 2P 2 ( M = Sr, Ba).

  18. A new shipping container for an intense neutron emitter

    International Nuclear Information System (INIS)

    Californium-252 is an intense neutron emitter (2.34 x 1012 n/s·g) used in medicine, research, and industry. The western world's sole source of this rare radioisotope is the Californium Facility at Oak Ridge National Laboratory's Radiochemical Engineering Development Center (REDC). A project has been initiated at the REDC to design a new Type B Californium Shipping Container. This effort is essential for future transportation of californium to meet the needs of users all over the world. The shipping container must meet all requirements for transport by motor freight, air, vessel, and rail, both domestic and foreign. There are unique problems in the design, fabrication, and licensing of a new Type B shipping container that will accommodate up to 60 milligrams of californium-252. One of the first challenges in the design phase of the project is the selection of a material to shield the high neutron flux. The more stringent safety precautions of today's world impel us to consider more exotic materials for such a purpose. The candidate materials must be examined not just for their neutron shielding properties, but also in conjunction with other properties such as thermal and structural requirements to withstand the hypothetical accident conditions. The design and building of such a container is a formidable task requiring much planning. The licensing process, with the complex, interactive federal codes, is a special challenge and may be the biggest on the project in terms of time and money

  19. Application of Cf for the quantitative measurement of nuclear reactor fuel materials

    International Nuclear Information System (INIS)

    Sensitive and rapid measurements of the quantity and geometric distribution of nuclear reactor fuel materials can be made using neutrons from californium. The neutron-induced fission rate in these materials may be measured by detection of either prompt radiations from fission or delayed radiations from radioactive fission products. A number of californium-based instruments are presently in use by the nuclear industry for purposes of process control, quality control, nuclear materials safeguards, and environmentl assessment. An Automated Fuel Rod Scanner (AFRS) is used for high-speed measurement of the uniformity of loading and total fissile content of reactor fuel rods. The fuel rods are moved first through an irradiator containing about 1 mg of californium, and subsequently through high-efficiency detectors for the measurement of fission-product gamma-rays. Multiple detectors on each of two irradiation channels are used to reduce the californium source strength requirement. The fuel loading of each 15-mm-long pellet is tested to +-10% on 100% of the plant throughput. By summing the response over length, the total fissile material content of the fuel rod is measured to better than 0.5%. An on-line computer for data processing allows the instrument to measure about 150 rods per hour with a single operator. The same activation concept is used with a 25-μg californium source in a Small Sample Assay System (SSAS) which measures the fissile content of fuel pellet sized samples with a precision of 0.5%

  20. Application of PGNAA to preincineration assay of combustible waste for chlorine

    Energy Technology Data Exchange (ETDEWEB)

    Gehrke, R.J.; Pawelko, R.J.; Greenwood, R.C. [Idaho National Engineering Lab., Idaho Falls, ID (United States)

    1995-12-31

    A prompt gamma neutron activation analysis method is being developed for on-stream pre-incineration assay of low level radioactive combustible waste for it`s chlorine content. The assay system consists of three californium 252 sources and a germanium or scintillation gamma-ray spectrometer.

  1. Magnetic measurements of the transuranium elements. Progress report, January 1, 1984-December 31, 1984

    International Nuclear Information System (INIS)

    Measurements of the magnetic properties of dhcp californium-249 metal indicated the presence of three regions of differing magnetic character. Additional measurements are also reported. Magnetic moments and valence states of terbium in TbF3, BaTbO3, and TbO18 are discussed. Progress on high-field operation of the micro-magnetic susceptometer is reported

  2. Source storage and transfer cask: Users Guide

    International Nuclear Information System (INIS)

    The storage and shield cask for the dual californium source is designed to shield and transport up to 3.7 mg (2 Ci) of 252Cf. the cask meets Department of Transportation (DOT) license requirements for Type A materials (DOT-7A). The cask is designed to transfer sources to and from the Flourinel and Fuel Storage (FAST) facility delayed-neutron interrogator. Californium sources placed in the cask must be encapsulated in the SR-CF-100 package and attached to Teleflex cables. The cask contains two source locations. Each location contains a gear box that allows a Teleflex cable to be remotely moved by a hand crank into and out of the cask. This transfer procedure permits sources to be easily removed and inserted into the delayed-neutron interrogator and reduces personnel radiation exposure during transfer. The radiation dose rate with the maximum allowable quantity of californium (3.7 mg) in the cask is 30 mR/h at the surface and less than 2 mR/h 1 m from the cask surface. This manual contains information about the cask, californium sources, describes the method to ship the cask, and how to insert and remove sources from the cask. 28 figs

  3. Discovery of Isotopes of the Transuranium Elements with 93 <= Z <= 98

    OpenAIRE

    Fry, C; Thoennessen, M

    2012-01-01

    One hundred and five isotopes of the transuranium elements neptunium, plutonium, americium, curium, berkelium and californium have so far been observed; the discovery of these isotopes is discussed. For each isotope a brief summary of the first refereed publication, including the production and identification method, is presented.

  4. Inflammatory process decrease by gallium-aluminium-arsenide (GaAlAs) low intensity laser irradiation on postoperative extraction of impacted lower third molar; Reducao de processo inflamatorio com aplicacao de laser de arseneto de galio aluminio ({lambda}=830 nm) em pos-operatorio de exodontia de terceiros molares inferiores inclusos ou semi-inclusos

    Energy Technology Data Exchange (ETDEWEB)

    Atihe, Mauricio Martins

    2002-07-01

    This study aimed the observation of inflammatory process decrease by the use of GaAlAs Low Intensity Laser ({lambda}=830 nm; 40 mW) irradiation. Five patients were selected and submitted to surgery of impacted lower third molars, both right and left sides at different occasions. On a first stage, a tooth of a random chosen side - right or left - was extracted by conventional surgery, without LILT. The inflammatory process was measured at postoperative on the first, third and seventh days. This side was then called 'control side'. After 21 days, period in which the inflammatory process of the first surgery was terminated, the other side surgery took place, this time using LILT (4 J at four spots) at postoperative, first and third days. As the previous surgery, the inflammatory process was also measured at postoperative on the first, third and seventh days. This side was called 'experimental or lased side'. The inflammatory process was evaluated by measuring its four characteristic signs: swelling, pain, color and temperature. It was clearly observed a decrease for swelling, pain and color on the lased side which presented significant inference and descriptive statistics. It can be concluded that GaAlAs Low Intensity Laser ({lambda}=830 nm) can surely be used as an additional and important anti-inflammatory source on impacted lower third molar surgeries. (author)

  5. High-power X- and Ka-band Gallium Nitride Amplifiers with Exceptional Efficiency Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Achieving very high-power amplification with maximum efficiency at X- and Ka-band is challenging using solid-state technology. Gallium Arsenide (GaAs) has been the...

  6. Pulse transformer for GaAs laser

    Science.gov (United States)

    Rutz, E. M.

    1976-01-01

    High-radiance gallium arsenide (GaAs) laser operating at room temperature is utilized in optical navigation system. For efficient transformer-to-laser impedance match, laser should be connected directly to pulse transformer secondary winding.

  7. NREL preprints for the 23rd IEEE Photovoltaic Specialists Conference

    Energy Technology Data Exchange (ETDEWEB)

    Fitzgerald, M. [ed.

    1993-05-01

    Topics covered include various aspects of solar cell fabrication and performance. Aluminium-gallium arsenides, cadmium telluride, amorphous silicon, and copper-indium-gallium selenides are all characterized in their applicability in solar cells.

  8. NASA-OAST photovoltaic energy conversion program

    Science.gov (United States)

    Mullin, J. P.; Loria, J. C.

    1984-01-01

    The NASA program in photovoltaic energy conversion research is discussed. Solar cells, solar arrays, gallium arsenides, space station and spacecraft power supplies, and state of the art devices are discussed.

  9. Highly strained InAs quantum wells on InP substrates for mid-IR emission

    Science.gov (United States)

    Kim, Sangho; Kirch, Jeremy; Mawst, Luke

    2010-04-01

    Optical emission characteristics of indium arsenide (InAs) quantum wells were studied using organometallic vapor phase epitaxy (OMVPE). Low growth temperature (DQW) in a separate confinement hetero-structure (SCH) structure.

  10. The radiation influence on physical properties in photosensitive structure

    International Nuclear Information System (INIS)

    It was shown experimentally that in photosensitive structures with gallium arsenides - cadmium sulfides heterojunction the physical properties after γ-radiation exposure could be changed essentially and their photoelectrical characteristics improved. (author). 3 refs.; 2 figs

  11. Activities of the Solid State Physics Research Institute

    Science.gov (United States)

    1985-01-01

    Topics addressed include: muon spin rotation; annealing problems in gallium arsenides; Hall effect in semiconductors; computerized simulation of radiation damage; single-nucleon removal from Mg-24; and He-3 reaction at 200 and 400 MeV.

  12. Influence of capping layer thickness on electronic states in self assembled MOVPE grown InAs quantum dots in GaAs

    Czech Academy of Sciences Publication Activity Database

    Hazdra, P.; Oswald, Jiří; Komarnitskyy, V.; Kuldová, Karla; Hospodková, Alice; Hulicius, Eduard; Pangrác, Jiří

    2009-01-01

    Roč. 46, 1-2 (2009), 324-327. ISSN 0749-6036 R&D Projects: GA ČR GA202/06/0718; GA AV ČR IAA100100719 Institutional research plan: CEZ:AV0Z10100521 Keywords : quantum dots * metal-organic vapor phase epitaxy * indium arsenide * gallium arsenide * photoluminescence * AFM Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.910, year: 2009

  13. Type-I InAs quantum dots covered by GaAsSb strain reducing layer

    Czech Academy of Sciences Publication Activity Database

    Pokorný, M.; Kozák, M.; Trojánek, F.; Pangrác, Jiří; Hospodková, Alice

    Bellingham : SPIE, 2014 - (Cabrini, S.; Lerondel, G.; Schwartzberg, A.; Mokari, T.), s. 916113 ISBN 978-1-62841-188-1. ISSN 0277-786X. - (Proceedings of SPIE. 9161). [Conference on Nanophotonic Materials XI. San Diego, CA (US), 20.08.2014-21.08.2014] Institutional support: RVO:68378271 Keywords : indium arsenide * quantum dots * gallium arsenide * luminescence * near infrared * telecommunications * upconversion Subject RIV: BM - Solid Matter Physics ; Magnetism

  14. Performance of a Double Gate Nanoscale MOSFET (DG-MOSFET) Based on Novel Channel Materials

    OpenAIRE

    Rakesh Prasher; Devi Dass; Rakesh Vaid

    2013-01-01

    In this paper, we have studied a double gate nanoscale MOSFET for various channel materials using simulation approach. The device metrics considered at the nanometer scale are subthreshold swing (SS), drain induced barrier lowering (DIBL), on and off current, carrier injection velocity (vinj), etc. The channel materials studied are Silicon (Si), Germanium (Ge), Gallium Arsenide (GaAs), Zinc Oxide (ZnO), Zinc Sulfide (ZnS), Indium Arsenide (InAs), Indium Phosphide (InP) and Indium Antimonide (...

  15. Oxidation of microquantities of transplutonium elements to tetravalent state in mineral acid solutions and their stability

    International Nuclear Information System (INIS)

    Kinetics of americium(3) microquantity oxidation and stability of forming americium(4), as well as possibility of curium and californium oxidation to tetravalent state in solutions of sulfuric and nitric acids depending on the concentration of mineral acid, potassium tungstophosphate and ammonium persulfate are studied by the extraction method. It is shown that curium(3) and californium(3) in solutions of 0.05-2.5 mol/l H2SO4 and HNO3 containing 10-3 mol/l potassium tungstophosphate is not practically oxidized by the mixture of silver nitrate and ammonium persulfate. Americium(3) is oxidized to the utmost to Am(4) for 2-3 min at room temperature, but stability of Am(4) depends on the concentration of sulfuric acid and potassium tungstophosphate

  16. Characterization of berkelium(III) dipicolinate and borate compounds in solution and the solid state.

    Science.gov (United States)

    Silver, Mark A; Cary, Samantha K; Johnson, Jason A; Baumbach, Ryan E; Arico, Alexandra A; Luckey, Morgan; Urban, Matthew; Wang, Jamie C; Polinski, Matthew J; Chemey, Alexander; Liu, Guokui; Chen, Kuan-Wen; Van Cleve, Shelley M; Marsh, Matthew L; Eaton, Teresa M; van de Burgt, Lambertus J; Gray, Ashley L; Hobart, David E; Hanson, Kenneth; Maron, Laurent; Gendron, Frédéric; Autschbach, Jochen; Speldrich, Manfred; Kögerler, Paul; Yang, Ping; Braley, Jenifer; Albrecht-Schmitt, Thomas E

    2016-08-26

    Berkelium is positioned at a crucial location in the actinide series between the inherently stable half-filled 5f(7) configuration of curium and the abrupt transition in chemical behavior created by the onset of a metastable divalent state that starts at californium. However, the mere 320-day half-life of berkelium's only available isotope, (249)Bk, has hindered in-depth studies of the element's coordination chemistry. Herein, we report the synthesis and detailed solid-state and solution-phase characterization of a berkelium coordination complex, Bk(III)tris(dipicolinate), as well as a chemically distinct Bk(III) borate material for comparison. We demonstrate that berkelium's complexation is analogous to that of californium. However, from a range of spectroscopic techniques and quantum mechanical calculations, it is clear that spin-orbit coupling contributes significantly to berkelium's multiconfigurational ground state. PMID:27563098

  17. Neutron activation determination of gold in technogenic raw materials with different mineral composition

    OpenAIRE

    Yudakov Aleksandr A.; Ivannikov Sergey I.; Zheleznov Veniamin V.; Taskin Andrei V.; Tsybulskaya Oksana N.

    2015-01-01

    The methods used to determine the gold content in the technogenic objects of gold mining were analyzed regarding their non-homogeneity and complexity of chemical and mineral compositions. A possible application of the neutron activation analysis with the use of the californium source of neutrons for determining the content of fine-grained and extra-fine-grained gold in the technogenic objects, including the bottom-ash waste of energy providers, is considere...

  18. Jak bylo objeveno spontánní štěpení

    Czech Academy of Sciences Publication Activity Database

    Vobecký, Miloslav

    Praha: Spektroskopická společnost J.M. Marci, 2010 - (Vobecký, M.), s. 5-10 ISBN 978-80-904539-0-6. [Seminář Radioanalytické metody IAA 10. Praha (CZ), 30.06.2010-01.07.2010] Institutional research plan: CEZ:AV0Z40310501 Keywords : spontaneous fission * fission -track dating method * californium 252 neutron source Subject RIV: CB - Analytical Chemistry, Separation

  19. Study of heavy particle decay from superheavy elements by SK model

    International Nuclear Information System (INIS)

    Heavy nuclei usually decay by alpha decay or spontaneous fission. These two decay modes are generally the most probable competing processes. Another less probable decay process is cluster radioactivity in which nuclei from carbon to silicon are emitted from Radium to Californium leading to the most stable daughter nucleus, lead. This work reports such a study using the cubic plus Yukawa plus exponential model of Shanmugam and Kamalaharan (SK)

  20. Measurement of the energy spectra of fission fragments using nuclear track detectors and digital image processing

    International Nuclear Information System (INIS)

    Energy spectra of fission fragments were determined using a Nuclear Track Methodology (NTM) supported by digital image analysis and numerical data processing using a standard personal computer. The analysis of a californium (252Cf) spectrum with this approach shows improvement compared with the values reported previously using the standard procedure, in terms of resolution and accuracy. This new method adds full automation to the technical advantages and cost effectiveness of an NTM.

  1. Heavy ion tests on programmable VLSI

    International Nuclear Information System (INIS)

    The radiation from space environment induces operation damages in onboard computers systems. The definition of a strategy, for the Very Large Scale Integrated Circuitry (VLSI) qualification and choice, is needed. The 'upset' phenomena is known to be the most critical integrated circuit radiation effect. The strategies for testing integrated circuits are reviewed. A method and a test device were developed and applied to space applications candidate circuits. Cyclotron, synchrotron and Californium source experiments were carried out

  2. Properties of neutron sources

    International Nuclear Information System (INIS)

    The Conference presentations were divided into sessions devoted to the following topics: white neutron sources, primarily pulsed (6 papers); fast neutron fields (5 papers); Californium-252 prompt fission neutron spectra (14 papers); monoenergetic sources and filtered beams (11 papers); 14 MeV neutron sources (10 papers); selected special application (one paper); and a general interest session (4 papers). Individual abstracts were prepared separately for the papers

  3. Neutron multiplicities for the transplutonium nuclides

    International Nuclear Information System (INIS)

    This paper continues, with respect to the transplutonium nuclides, earlier efforts to collate and evaluate data from the scientific literature on the prompt neutron multiplicity distribution from fission and its first moment = ΣnuPnu. The isotopes considered here for which P/sub nu/ and or data (or both) were found in the literature are of americium (Am), curium (Cm), berkelium (Bk), californium (Cf), einsteinium (Es), fermium (Fm), and nobelium (No)

  4. Peeled film GaAs solar cell development

    International Nuclear Information System (INIS)

    Thin film, single crystal gallium arsenide (GaAs) solar cells could exhibit a specific power approaching 700 W/Kg including coverglass. A simple process has been described whereby epitaxial GaAs layers are peeled from a reusable substrate. This process takes advantage of the extreme selectivity (>106) of the etching rate of aluminum arsenide (AlAs) over GaAs in dilute hydrofloric acid (HF). The intent of this work is to demonstrate the feasibility of using the peeled film technique to fabricate high efficiency, low mass GaAs solar cells. We have successfully produced a peeled film GaAs solar cell. The device, although fractured and missing the aluminum gallium arsenide (Alx Ga1-x As) window and antireflective (AR) coating, had a Voc of 874 mV and a fill factor of 68% under AMO illumination

  5. Semiconducting III-V compounds

    CERN Document Server

    Hilsum, C; Henisch, Heinz R

    1961-01-01

    Semiconducting III-V Compounds deals with the properties of III-V compounds as a family of semiconducting crystals and relates these compounds to the monatomic semiconductors silicon and germanium. Emphasis is placed on physical processes that are peculiar to III-V compounds, particularly those that combine boron, aluminum, gallium, and indium with phosphorus, arsenic, and antimony (for example, indium antimonide, indium arsenide, gallium antimonide, and gallium arsenide).Comprised of eight chapters, this book begins with an assessment of the crystal structure and binding of III-V compounds, f

  6. Film germanium strain gauges for cryogenic temperatures

    International Nuclear Information System (INIS)

    Strain-measuring characteristics of strain gauges (SG) based on germanium films on gallium arsenide designed for operation in 4-100 K temperature interval and strain range ε∼(±0.3%) are presented. SG are characterized by weak temperature dependences of resistance and strain sensitivity in the temperature range measured. It is shown that in the low-temperature region SG based on heteroepitaxial germanium films on gallium arsenide are no worse than the best domestic and foreign semiconducting and metal SG and are perspective for cryogenic object diagnostics under magnetic field effect

  7. The effect of different solar simulators on the measurement of short-circuit current temperature coefficients

    Science.gov (United States)

    Curtis, H. B.; Hart, R. E., Jr.

    1982-01-01

    Gallium arsenide solar cells are considered for several high temperature missions in space. Both near-Sun and concentrator missions could involve cell temperatures on the order of 200 C. Performance measurements of cells at elevated temperatures are usually made using simulated sunlight and a matched reference cell. Due to the change in bandgap with increasing temperature at portions of the spectrum where considerable simulated irradiance is present, there are significant differences in measured short circuit current at elevated temperatures among different simulators. To illustrate this, both experimental and theoretical data are presented for gallium arsenide cells.

  8. Application and development of density functional theory.

    OpenAIRE

    Choudhury, R.

    2006-01-01

    This thesis concerns developments and applications using the density functional theory (DFT) ab initio electronic structure method. Implementation of a pseudo atomic orbital (PAO) basis set in the linear scaling DFT program CONQUEST is reported and used to test aspects of the linear scaling algorithm. Also a separate study using plane-wave DFT (VASP code) to model the strained growth of Indium Arsenide (InAs) on the (110) surface of Gallium Arsenide (GaAs), in particular the formation of a st...

  9. Isovalent impurities in A3B5 compounds

    International Nuclear Information System (INIS)

    Results of investigation of properties in gallium arsenide alloyed with isovalent additions (antimony and indium) are considered. An attempt to interpret the results obtained with provision for changes in groups of point defects induced by isovalent additions (JA) introduction is made. An assumption is confirmed that JA change relation between concentrations of intrinsic defects. For example, in the hole-type GaAs:Ge material introduction of Sb leads to hole concentration increase at the expense of a decrease of Ga self-compensation degree. Effect of additions on electrical and optical properties of gallium arsenide is explained

  10. Space station automation study: Automation requriements derived from space manufacturing concepts,volume 2

    Science.gov (United States)

    1984-01-01

    Automation reuirements were developed for two manufacturing concepts: (1) Gallium Arsenide Electroepitaxial Crystal Production and Wafer Manufacturing Facility, and (2) Gallium Arsenide VLSI Microelectronics Chip Processing Facility. A functional overview of the ultimate design concept incoporating the two manufacturing facilities on the space station are provided. The concepts were selected to facilitate an in-depth analysis of manufacturing automation requirements in the form of process mechanization, teleoperation and robotics, sensors, and artificial intelligence. While the cost-effectiveness of these facilities was not analyzed, both appear entirely feasible for the year 2000 timeframe.

  11. Angle - resolved photoemission study of two phases of the GaAs(100)-c(4x4) surface

    Czech Academy of Sciences Publication Activity Database

    Cukr, Miroslav; Jiříček, Petr; Bartoš, Igor; Sadowski, J.

    2008-01-01

    Roč. 100, - (2008), 072017/1-072017/4. ISSN 1742-6588 R&D Projects: GA AV ČR IAA100100628; GA ČR GA202/07/0601 Institutional research plan: CEZ:AV0Z10100521 Keywords : gallium arsenide * molecular beam epitaxy * photoelectron spectroscopy * surface reconstruction * surface phases * electron states Subject RIV: BM - Solid Matter Physics ; Magnetism

  12. Advanced infrared photomultiplier

    Science.gov (United States)

    Sonnenberg, H.; Taynal, J. D.

    1972-01-01

    Photocathode for the 8500 angstrom through 9000 angstrom range, improving efficiency by an order of magnitude, is achieved with a gallium arsenide cesium oxide photocathode. Protection of the GaAs surface from contamination during bake-out is another important function.

  13. Scratch encourages selective doping

    Science.gov (United States)

    Hawrylo, F. Z.; Kressel, H.

    1980-01-01

    Dislocations induced by scratching produce deep narrow spikes of zinc diffused in gallium arsenide. Density of defects formed locally increases zinc diffusion coefficient. Enhancements by factor of 6 have been observed. Technique works for other dopants than zinc and for other semiconductors besides GaAs.

  14. Fast Clock Recovery for Digital Communications

    Science.gov (United States)

    Tell, R. G.

    1985-01-01

    Circuit extracts clock signal from random non-return-to-zero data stream, locking onto clock within one bit period at 1-gigabitper-second data rate. Circuit used for synchronization in opticalfiber communications. Derives speed from very short response time of gallium arsenide metal/semiconductor field-effect transistors (MESFET's).

  15. Low level laser therapy on experimental myopathy

    OpenAIRE

    Dávila, Soledad; Vignola, María Belén; Cremonezzi, David; Simes, Juan C.; Soriano, Fernando; Campana, Vilma R.

    2011-01-01

    Purpose: The aim of the present work was to study the effect of Helium-Neon (HeNe) and Gallium Arsenide (GaAs) laser upon nitric oxide (NO) plasma levels, an inflammatory biomarker associated with oxidative stress, in rats with experimental myopathy. These were evaluated through histological assessment.

  16. Tunable structures and modulators for THz light

    Czech Academy of Sciences Publication Activity Database

    Kužel, Petr; Kadlec, Filip

    2008-01-01

    Roč. 9, - (2008), 197-214. ISSN 1631-0705 R&D Projects: GA AV ČR KJB100100512; GA MŠk LC512 Institutional research plan: CEZ:AV0Z10100520 Keywords : terahertz radiation * tunable devices * photonic crystals * strontium titanate * gallium arsenide Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.164, year: 2008

  17. High-resolution X-ray diffraction and electron microscopy study of porous GaAs substrates

    Czech Academy of Sciences Publication Activity Database

    Lomov, A. A.; Grym, Jan; Nohavica, Dušan; Orehov, A.S.; Vasil'ev, A. L.; Novikov, D. V.

    BELLINGHAM: SPIE, 2013 - (Orlikovsky, A.) ISBN 9780819494870. ISSN 0277-786X. [International Conference Micro- and Nano-Electronics 2012. Zvenlgorod (RU), 01.10.2012-5.10.2012] R&D Projects: GA MŠk LD12014 Institutional support: RVO:67985882 Keywords : Etching * Diffraction * Galllium arsenide Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering

  18. First principles study of structural, electronic and magnetic properties of magnesium

    Science.gov (United States)

    Abdel Rahim, G. P.; Rodríguez M, J. A.; Moreno-Armenta, M. G.

    2016-02-01

    We investigated the structural, electronic, and magnetic properties of Mg, in the CS (simple cubic), NiAs (Nickel arsenide), FCC (rock-salt), R (Rhombohedral), Diamond and WZ (wurtzite) phases. Calculations were performed using the first-principles pseudo-potential method within the framework of spin-density functional theory (DFT).

  19. Satellite Power System Concept Development and Evaluation Program, Critical Supporting Investigations. Summary

    Science.gov (United States)

    Seyl, J. W.

    1980-01-01

    Investigations in critical technology of the solar power satellite (SPS) concept development program are summarized. Studies of the potential application of fiber optics transmission links across the SPS one kilometer antenna and evaluation of gallium arsenide field effect transistors and their associated power amplifier circuitry are discussed in more detail.

  20. InP solar cell with window layer

    Science.gov (United States)

    Jain, Raj K. (Inventor); Landis, Geoffrey A. (Inventor)

    1994-01-01

    The invention features a thin light transmissive layer of the ternary semiconductor indium aluminum arsenide (InAlAs) as a front surface passivation or 'window' layer for p-on-n InP solar cells. The window layers of the invention effectively reduce front surface recombination of the object semiconductors thereby increasing the efficiency of the cells.

  1. Efficient frequency comb generation in AlGaAs-on-insulator

    DEFF Research Database (Denmark)

    Pu, Minhao; Ottaviano, Luisa; Semenova, Elizaveta;

    2016-01-01

    The combination of nonlinear and integrated photonics enables Kerr frequency comb generation in stable chip-based microresonators. Such a comb system will revolutionize applications, including multi-wavelength lasers, metrology, and spectroscopy. Aluminum gallium arsenide (AlGaAs) exhibits very h...

  2. Preliminary materials assessment for the Satellite Power System (SPS)

    Energy Technology Data Exchange (ETDEWEB)

    Teeter, R.R.; Jamieson, W.M.

    1980-01-01

    Presently, there are two SPS reference design concepts (one using silicon solar cells; the other using gallium arsenide solar cells). A materials assessment of both systems was performed based on the materials lists set forth in the DOE/NASA SPS Reference System Report: Concept Development and Evaluation Program. This listing identified 22 materials (plus miscellaneous and organics) used in the SPS. Tracing the production processes for these 22 materials, a total demand for over 20 different bulk materials (copper, silicon, sulfuric acid, etc.) and nealy 30 raw materials (copper ore, sand, sulfur ore, etc.) was revealed. Assessment of these SPS material requirements produced a number of potential material supply problems. The more serious problems are those associated with the solar cell materials (gallium, gallium arsenide, sapphire, and solar grade silicon), and the graphite fiber required for the satellite structure and space construction facilities. In general, the gallium arsenide SPS option exhibits more serious problems than the silicon option, possibly because gallium arsenide technology is not as well developed as that for silicon. Results are presented and discussed in detail. (WHK)

  3. Modeling of High Efficiency Solar Cells Under Laser Pulse for Power Beaming Applications

    Science.gov (United States)

    Jain, Raj K.; Landis, Geoffrey A.

    1994-01-01

    Solar cells may be used as receivers for laser power beaming. To understand the behavior of solar cells when illuminated by a pulsed laser, the time response of gallium arsenide and silicon solar cells to pulsed monochromatic input has been modeled using a finite element solar cell model.

  4. Low temperature transport in p-doped InAs nanowires

    DEFF Research Database (Denmark)

    Upadhyay, Shivendra; Jespersen, Thomas Sand; Madsen, Morten Hannibal;

    2013-01-01

    We present low temperature electrical measurements of p-type Indium Arsenide nanowires grown via molecular beam epitaxy using Beryllium as a dopant. Growth of p-type wires without stacking faults is demonstrated. Devices in field-effect geometries exhibit ambipolar behavior, and the temperature...

  5. 500 MHz transient digitizers based on GaAs CCDs

    International Nuclear Information System (INIS)

    A system of 500 MHz transient digitizers based on gallium arsenide resistive gate charged coupled devices has been developed for an experiment studying rare K decays. CCDs with dynamic range of 8-bits and 128 or 320 pixels are used as analog pipelines. The CCD's are driven by a single phase transport system. Data readout and manipulation occurs at 15.6 MHz. (authors)

  6. 500 MHz transient digitizers based on GaAs CCDs

    International Nuclear Information System (INIS)

    A wide bandwidth transient digitizer based on a recently produced gallium arsenide charged coupled device is under development. The CCDs have 128 pixels and operate at 500 MHz. Initial testing of prototype modules in Experiment 787 at Brookhaven National Laboratory is reported. (Author) (8 refs., 10 figs.)

  7. Simple intrinsic defects in InAs : numerical predictions.

    Energy Technology Data Exchange (ETDEWEB)

    Schultz, Peter Andrew

    2013-03-01

    This Report presents numerical tables summarizing properties of intrinsic defects in indium arsenide, InAs, as computed by density functional theory using semi-local density functionals, intended for use as reference tables for a defect physics package in device models.

  8. Quantum dot photonic crystal lasers

    OpenAIRE

    Yoshie, T.; Shchekin, O. B.; Chen, H.; Deppe, D. G.; Scherer, A.

    2002-01-01

    Coupled cavity designs on two-dimensional square lattice photonic crystal slabs were used to demonstrate optically pumped indium arsenide quantum dot photonic crystal lasers at room temperature. Threshold pump powers of 120 and 370 μW were observed for coupled cavities including two and four defect cavities defined in optimised photonic crystals.

  9. An in-vacuum diffractometer for resonant elastic soft x-ray scattering

    Czech Academy of Sciences Publication Activity Database

    Hawthorn, D.G.; He, F.; Venema, L.; Davis, H.; Achkar, A.J.; Zhang, J.; Sutarto, R.; Wadati, H.; Radi, A.; Wilson, T.; Wright, G.; Shen, K.M.; Geck, J.; Zhang, H.; Novák, Vít; Sawatzky, G.A.

    2011-01-01

    Roč. 82, č. 7 (2011), 073104/1-073104/8. ISSN 0034-6748 Institutional research plan: CEZ:AV0Z10100521 Keywords : gallium arsenide * lanthanum compounds * manganese compounds * neodymium * reflectivity * semiconductor thin films * strontium compounds * X-ray diffraction Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.367, year: 2011

  10. High-temperature optically activated GaAs power switching for aircraft digital electronic control

    Science.gov (United States)

    Berak, J. M.; Grantham, D. H.; Swindal, J. L.; Black, J. F.; Allen, L. B.

    1983-01-01

    Gallium arsenide high-temperature devices were fabricated and assembled into an optically activated pulse-width-modulated power control for a torque motor typical of the kinds used in jet engine actuators. A bipolar heterojunction phototransistor with gallium aluminum arsenide emitter/window, a gallium arsenide junction field-effect power transistor and a gallium arsenide transient protection diode were designed and fabricated. A high-temperature fiber optic/phototransistor coupling scheme was implemented. The devices assembled into the demonstrator were successfully tested at 250 C, proving the feasibility of actuator-located switching of control power using optical signals transmitted by fibers. Assessments of the efficiency and technical merits were made for extension of this high-temperature technology to local conversion of optical power to electrical power and its control at levels useful for driving actuators. Optical power sources included in the comparisons were an infrared light-emitting diode, an injection laser diode, tungsten-halogen lamps and arc lamps. Optical-to-electrical power conversion was limited to photovoltaics located at the actuator. Impedance matching of the photovoltaic array to the load was considered over the full temperature range, -55 C to 260 C. Loss of photovoltaic efficiency at higher temperatures was taken into account. Serious losses in efficiency are: (1) in the optical source and the cooling which they may require in the assumed 125 C ambient, (2) in the decreased conversion efficiency of the gallium arsenide photovoltaic at 260 C, and (3) in impedance matching. Practical systems require improvements in these areas.

  11. Dependence of metal partition coefficients in D2EHPA capacity on extraction from acid solutions

    International Nuclear Information System (INIS)

    In devising solvent-extraction schemes for extracting the transplutonium elements (TPE), one usually employs the partition coefficients K/sub p/ for trace amounts; when the results are transferred to weighable amounts of the elements, there are difficulties because one lacks capacity characteristics for the extractants under the conditions used. They have determined the capacity of D2EHPA over a wide range in acidity (0.001-2 mole/liter) in relation to dysprosium (the analog of californium) in the system formed by D2EHPA with nitric acid by saturating a set volume of the extractant with dysprosium in nitric acid containing the necessary amount of free acid

  12. TOWARD AN IMPROVED UNDERSTANDING OF STRUCTURE AND MAGNETISM IN NEPTUNIUM AND PLUTONIUM PHOSPHONATES AND SULFONATES

    Energy Technology Data Exchange (ETDEWEB)

    Albrecht-Schmitt, Thomas

    2012-03-01

    This grant supported the exploratory synthesis of new actinide materials with all of the actinides from thorium to californium with the exceptions of protactinium and berkelium. We developed detailed structure-property relationships that allowed for the identification of novel materials with selective ion-exchange, selective oxidation, and long-range magnetic ordering. We found novel bonding motifs and identified periodic trends across the actinide series. We identified structural building units that would lead to desired structural features and novel topologies. We also characterized many different spectroscopic trends across the actinide series. The grant support the preparation of approximately 1200 new compounds all of which were structurally characterized.

  13. NONDESTRUCTIVE IDENTIFICATION OF CHEMICAL WARFARE AGENTS AND EXPLOSIVES BY NEUTRON GENERATOR-DRIVEN PGNAA

    International Nuclear Information System (INIS)

    Prompt gamma-ray neutron activation analysis (PGNAA) is now a proven method for the identification of chemical warfare agents and explosives in military projectiles and storage containers. Idaho National Laboratory is developing a next-generation PGNAA instrument based on the new Ortec Detective mechanically-cooled HPGe detector and a neutron generator. In this paper we review PGNAA analysis of suspect chemical warfare munitions, and we discuss the advantages and disadvantages of replacing the californium-252 radioisotopic neutron source with a compact accelerator neutron generator

  14. NONDESTRUCTIVE IDENTIFICATION OF CHEMICAL WARFARE AGENTS AND EXPLOSIVES BY NEUTRON GENERATOR-DRIVEN PGNAA

    Energy Technology Data Exchange (ETDEWEB)

    T. R. Twomey; A. J. Caffrey; D. L. Chichester

    2007-02-01

    Prompt gamma-ray neutron activation analysis (PGNAA) is now a proven method for the identification of chemical warfare agents and explosives in military projectiles and storage containers. Idaho National Laboratory is developing a next-generation PGNAA instrument based on the new Ortec Detective mechanically-cooled HPGe detector and a neutron generator. In this paper we review PGNAA analysis of suspect chemical warfare munitions, and we discuss the advantages and disadvantages of replacing the californium-252 radioisotopic neutron source with a compact accelerator neutron generator.

  15. Composition containing transuranic elements for use in the homeopathic treatment of aids

    International Nuclear Information System (INIS)

    A homeopathic remedy consisting of a composition containing one or more transuranic elements, particularly plutonium, for preventing and treating acquired immunodeficiency syndrome (AIDS) in humans, as well as seropositivity for human immunodeficiency virus (HIV). Said composition is characterized in that it uses any chemical or isotopic form of one or more transuranic elements (neptunium, plutonium, americium, curium, berkelium, californium or einsteinium), particularly plutonium, said form being diluted and dynamized according to conventional homeopathic methods, particularly the so-called Hahnemann and Korsakov methods, and provided preferably but not exclusively in the form of lactose and/or saccharose globules or granules impregnated with the active principle of said composition. (author)

  16. Neutron nondestructive essay of the plutonium metal parts

    International Nuclear Information System (INIS)

    Based on the principle of neutron multiplicity and data unfolding mathematics, this paper developed the software which can execute the neutron multiplicity analysis, neutron attenuation analysis, parameter calibration, Pu mass solution with the neutron pulse sequence acquisition method. The measurement system consisted of detector,nuclear electronic apparatus, pulsed sequence acquisition and analysis software was tested and calibrated by californium source. Three mental plutonium components with different mass were used for experimental assay and validation, which showed that the assay bias was within 15% against the nominal value of the samples. (authors)

  17. Physical-chemical studies of transuranium elements. Progress report, April 1, 1982-March 31, 1983

    International Nuclear Information System (INIS)

    Progress is reported on the following topics: electrochemical and spectroscopic studies of less-stable higher oxidation states of transuranium elements in complexing aqueous media; spectroscopic and electrochemical studies of selected lanthanides and actinides in molten dimethyl sulfone; spectroelectronchemical studies of the Ce(IV)/Ce(III) couple in aqueous carbonate solutions; characterization of actinide orthophosphates by Raman and absorption spectrophotometries and by x-ray diffraction; relativistic multiple scattering calculations on transuranium element compounds; Raman spectroscopic studies of natural minerals containing the uranyl ion; and solution calorimetry of californium metal

  18. Transuranium element production. II. Chemical processing of targets

    International Nuclear Information System (INIS)

    The chemical processing described concerns small experimental targets irradiated in OSIRIS or EL-III and industrial targets irradiated in the CELESTIN reactors. In view of the difficulties encountered when processing highly irradiated targets (760MWd.kg-1) by liquid-liquid extraction (interface sludges leading to stable emulsion) the new processes developed are based on inverse phase chromatography. This technique applied to targets of americium 241, plutonium 239 and a plutonium mixture rich in isotope 242 has given tens of milligrams of curium 242, grams of americium 243 and curium 244 and micrograms of californium 252

  19. Detection of rare earth elements in Powder River Basin sub-bituminous coal ash using laser-induced breakdown spectroscopy (LIBS)

    Energy Technology Data Exchange (ETDEWEB)

    Tran, Phuoc [National Energy Technology Lab. (NETL), Pittsburgh, PA, (United State; Mcintyre, Dustin [National Energy Technology Lab. (NETL), Pittsburgh, PA, (United State

    2015-10-01

    We reported our preliminary results on the use of laser-induced breakdown spectroscopy to analyze the rare earth elements contained in ash samples from Powder River Basin sub-bituminous coal (PRB-coal). We have identified many elements in the lanthanide series (cerium, europium, holmium, lanthanum, lutetium, praseodymium, promethium, samarium, terbium, ytterbium) and some elements in the actinide series (actinium, thorium, uranium, plutonium, berkelium, californium) in the ash samples. In addition, various metals were also seen to present in the ash samples

  20. Radiation protection data sheet. Radiation protection data sheets for the use of radionuclides in unsealed sources

    International Nuclear Information System (INIS)

    These radiation protection data sheet are devoted to responsible persons and employees of various laboratories or medical, pharmaceutical, university and industrial departments where radionuclides are handled as well as all the persons who attend to satisfy in this field. They contain the essential radiation protection data for the use of unsealed sources: physical characteristics, risk assessment, administrative procedures, recommendations, regulations and bibliography. This new series includes the following radionuclides: californium 252, curium 244, gallium 67, indium 113m, plutonium 238, plutonium 239, polonium 210, potassium 42, radium 226, thorium 232, uranium 238 and zinc 65. (O.M.)

  1. Study by thermochromatography of fluorides of transuranium elements

    International Nuclear Information System (INIS)

    Thermochromatography was made suitable for fluoride study. So, an investigation of actinide tetrafluorides was accomplished from uranium to californium. Pentavalent and hexavalent fluorospecies of uranium, neptunium, plutonium and ruthenium were studied. Some new compounds have been identified in gaseous phase, whose: PuF5, PuOF3 and PaOF3. Furthermore, some presomptions as for the existence in gaseous phase of EsF4 and of an heptavalent fluorospecies of plutonium have been established. An important analogy between plutonium and ruthenium behaviour with fluorine have been shown, these results could explain the difficulties encountered in the fluoride-volatility processes

  2. PROCEEDINGS OF THE SYMPOSIUM COMMEMORATING THE 25th ANNIVERSARY OF ELEMENTS 97 and 98 HELD ON JAN. 20, 1975

    Energy Technology Data Exchange (ETDEWEB)

    Seaborg, Glenn T.; Street Jr., Kenneth; Thompson, Stanley G.; Ghiorso, Albert

    1976-07-01

    This volume includes the talks given on January 20, 1975, at a symposium in Berkeley on the occasion of the celebration of the 25th anniversary of the discovery of berkelium and californium. Talks were given at this symposium by the four people involved in the discovery of these elements and by a number of people who have made significant contributions in the intervening years to the investigation of their nuclear and chemical properties. The papers are being published here, without editing, in the form in which they were submitted by the authors in the months following the anniversary symposium, and they reflect rather faithfully the remarks made on that occasion.

  3. Method for measuring multiple scattering corrections between liquid scintillators

    Science.gov (United States)

    Verbeke, J. M.; Glenn, A. M.; Keefer, G. J.; Wurtz, R. E.

    2016-07-01

    A time-of-flight method is proposed to experimentally quantify the fractions of neutrons scattering between scintillators. An array of scintillators is characterized in terms of crosstalk with this method by measuring a californium source, for different neutron energy thresholds. The spectral information recorded by the scintillators can be used to estimate the fractions of neutrons multiple scattering. With the help of a correction to Feynman's point model theory to account for multiple scattering, these fractions can in turn improve the mass reconstruction of fissile materials under investigation.

  4. Surface fission tracks in diamond

    International Nuclear Information System (INIS)

    Scanning Probe Microscope (SPM) images reveal important fingerprint features of latent tracks induced in diamond by fission fragments from a californium source. Collimated fission fragments with a binary distribution of the predominant energies of 79.4 and 103.8 MeV, are assumed. Cavities, reticular formations around these cavities, and black spots of graphite were found. A brief discussion on the possible track formation mechanism is given on the basis of the explosion spike theory; an attempt to determine latent track core and halo parameters is included

  5. Use of trioctylphosphine oxide for transplutonium element extraction and purification

    International Nuclear Information System (INIS)

    Investigated was extraction of tri-valent curium, berkelium, californium, einsteinium as well as cerium and europium with trioctylphosphin oxide from lactic acid solutions, containing DTPA and aluminium nitrate depending on the aluminium nitrate and TOPO concentrations and nitric acid solutions of variable concentration as well. Under optimum conditions of extraction chromatography of berkelium studied was the distribution of cobalt, nickel, chromium, iron, aluminium, titanium, zirconium and niobium ions, and the coefficients of berkelium purification from cations investigated were determined. The effect of weight quantities of cation impurities on extraction chromatographic yield of berkelium has been investigated. Examples of practice application of the extraction chromatography with the use of TOPO are given

  6. Monte Carlo aided enhanced design of an neutron scatterometer

    International Nuclear Information System (INIS)

    This paper will present a particular example for the use of the Monte Carlo Method to enhance the performance of a neutron scatterometer, currently employed to detect the void fraction in fast-transient high-pressure water-vapour flow in a rod-bundle channel. The scatterometer relies on measuring the slowing-down of californium-252 neutrons by the hydrogen in the water to determine the liquid, hence vapour (void) content. However, californium-252 is a relatively fast-decaying source and alternative isotopic sources are typically too energetic to provide sufficient moderation given the small amount of liquid in the channel. Monte Carlo simulation were utilized to examine various design enhancement possibilities, including: filtering out unthermalized fast neutrons, amplifying by a fissionable material the amount of detected thermal neutrons, adding a dissolvable contrast material to the liquid phase, or relying on the scattering of fast neutrons by oxygen in water. In addition, methods to determine the distribution of the pattern of liquid-vapour phase in the channel are devised

  7. Development of electrochemical photovoltaic cells. Third technical progress report, November 1, 1979-January 31, 1980

    Energy Technology Data Exchange (ETDEWEB)

    Byker, H.J.; Schwerzel, R.E.; Wood, V.E.; Austin, A.E.; Brooman, E.W.

    1980-03-07

    The development of stable, efficient, electrochemical photovoltaic cells based on silicon and gallium arsenide in non-aqueous electrolyte systems is being investigated. The effect of surface condition of silicon electrodes on electrochemical and physical characteristics has been studied. An electrode-supporting electrolyte interaction in acetonitrile has been identified which leads to etching of the surface. Improved performance can result, which has practical significance. Gallium arsenide electrodes have been electrochemically characterized in cells containing propylene carbonate with a ferrocene/ferricenium redox additive. Degradation of the ferricenium salt under illumination has been investigated. Other redox couples studied to date have not given promising results. Long-term stability experiments have been deferred while a better understanding of electrode behavior is being obtained.

  8. Direct imaging of the structural domains in the iron pnictides AFe2As2 (A=Ca, Sr, Ba)

    International Nuclear Information System (INIS)

    The parent compounds of recently discovered iron-arsenide superconductors, AFe2As2 with alkaline earth A=Ca,Sr,Ba, undergo simultaneous structural and magnetic phase transitions at a temperature TSM. Using a combination of polarized light microscopy and spatially resolved high-energy synchrotron x-ray diffraction we show that the orthorhombic distortion leads to the formation of 45o-type structural domains in all parent compounds. Domains penetrate through the sample thickness in the c direction and are not affected by crystal imperfections such as growth terraces. The domains form regular stripe patterns in the plane with a characteristic dimension of 10--50 μm. The direction of the stripes is fixed with respect to the tetragonal (100) and (010) directions but can change by 90o on thermal cycling through the transition. This domain pattern may have profound implications for intrinsic disorder and anisotropy of iron arsenides.

  9. Inter-granular current in iron-oxypnictide superconductors

    Energy Technology Data Exchange (ETDEWEB)

    Tamegai, T., E-mail: tamegai@ap.t.u-tokyo.ac.j [Department of Applied Physics, University of Tokyo, Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); JST, Transformative Research-Project on Iron Pnictides (TRIP), Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Tsuchiya, Y. [Department of Applied Physics, University of Tokyo, Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Nakajima, Y. [Department of Applied Physics, University of Tokyo, Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); JST, Transformative Research-Project on Iron Pnictides (TRIP), Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Kamihara, Y. [JST, Transformative Research-Project on Iron Pnictides (TRIP), Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); Hosono, H. [Frontier Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); ERATO-SORST, JST in Frontier Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan)

    2010-11-01

    Inter- and intragranular currents, J{sub c}{sup inter} and J{sub c}{sup intra}, in LaFePO{sub 0.94}F{sub 0.06} polycrystalline sample are evaluated by measuring the remanent-state field profile using magneto-optical imaging method. Obtained images show the absence of magnetic field modulation associated with the weak-link nature of grain boundaries, indicating that J{sub c}{sup inter} and J{sub c}{sup intra} are comparable in magnitude in contrast to other iron-arsenide superconductors. J{sub c}{sup inter} is estimated to be 2 x 10{sup 4} A/cm{sup 2} in the limit of T = 0 K, which is larger than the values in other iron-arsenide superconductors. Implication of these J{sub c} behavior is discussed in relation with possible pairing symmetries.

  10. Magneto-optical imaging of polycrystalline LaFePO{sub 1-x}F{sub x}

    Energy Technology Data Exchange (ETDEWEB)

    Tsuchiya, Y., E-mail: tt097125@mail.ecc.u-tokyo.ac.j [Department of Applied Physics, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Nakajima, Y.; Tamegai, T. [Department of Applied Physics, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); JST, Transformative Research-Project on Iron Pnictides (TRIP), 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Kamihara, Y. [TRIP, JST in Materials and Structure Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); Hirao, M. [Frontier Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); ERATO-SORST, JST in Frontier Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); Hosono, H. [Frontier Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); ERATO-SORST, JST in Frontier Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan)

    2010-12-15

    The remanent state field profile has been observed in polycrystalline LaFePO{sub 0.94}F{sub 0.06} by magneto-optical (MO) imaging method. MO images show the absence of magnetic field modulation associated with weak-link nature of grain boundaries, indicating that the inter-grain critical current density J{sub c}{sup inter} is comparable to intra-grain critical current density J{sub c}{sup intra} in contrast to iron-arsenide superconductors. J{sub c}{sup inter} is estimated as 1.9 x 10{sup 4} A/cm{sup 2} at T = 0 K from magnetization measurement, which is similar to the values in iron-arsenide superconductors. Implication of these J{sub c} behavior is discussed in relation to the possible pairing symmetry.

  11. Coherent Cancellation of Photothermal Noise in GaAs/Al$_{0.92}$Ga$_{0.08}$As Bragg Mirrors

    CERN Document Server

    Chalermsongsak, Tara; Cole, Garrett D; Follman, David; Seifert, Frank; Arai, Koji; Gustafson, Eric K; Smith, Joshua R; Aspelmeyer, Markus; Adhikari, Rana X

    2015-01-01

    Thermal noise is a limiting factor in many high-precision optical experiments. A search is underway for novel optical materials with reduced thermal noise. One such pair of materials, gallium arsenide and aluminum-alloyed gallium arsenide (collectively referred to as AlGaAs), shows promise for its low Brownian noise when compared to conventional materials such as silica and tantala. However, AlGaAs has the potential to produce a high level of thermo-optic noise. We have fabricated a set of AlGaAs crystalline coatings, transferred to fused silica substrates, whose layer structure has been optimized to reduce thermo-optic noise by inducing coherent cancellation of the thermoelastic and thermorefractive effects. By measuring the photothermal transfer function of these mirrors, we find evidence that this optimization has been successful.

  12. Coherent cancellation of photothermal noise in GaAs/Al0.92Ga0.08As Bragg mirrors

    Science.gov (United States)

    Chalermsongsak, Tara; Hall, Evan D.; Cole, Garrett D.; Follman, David; Seifert, Frank; Arai, Koji; Gustafson, Eric K.; Smith, Joshua R.; Aspelmeyer, Markus; Adhikari, Rana X.

    2016-04-01

    Thermal noise is a limiting factor in many high-precision optical experiments. A search is underway for novel optical materials with reduced thermal noise. One such pair of materials, gallium arsenide and aluminum-alloyed gallium arsenide (collectively referred to as AlGaAs), shows promise for its low Brownian noise when compared to conventional materials such as silica and tantala. However, AlGaAs has the potential to produce a high level of thermo-optic noise. We have fabricated a set of AlGaAs crystalline coatings, transferred to fused silica substrates, whose layer structure has been optimized to reduce thermo-optic noise by inducing coherent cancellation of the thermoelastic and thermorefractive effects. By measuring the photothermal transfer function of these mirrors, we find evidence that this optimization has been successful.

  13. Pseudogap and its critical point in the heavily doped Ba(Fe1-xCox)2As2 from c -axis resistivity measurements

    Science.gov (United States)

    Tanatar, M. A.; Ni, N.; Thaler, A.; Bud'Ko, S. L.; Canfield, P. C.; Prozorov, R.

    2010-10-01

    Temperature-dependent interplane resistivity, ρc(T) , was used to characterize the normal state of the iron-arsenide superconductor Ba(Fe1-xCox)2As2 over a broad doping range 0≤xTCG , vanishes at xCG≃0.30 , paving the way to metallic, T linear, ρc(T) close to xCG and superlinear T dependence for x>xCG . None of these features are evident in the in-plane resistivity ρa(T) . For doping levels xxCG . These features are consistent with the existence of a charge gap, accompanying formation of the magnetic pseudogap, and its critical suppression with doping. The inferred c -axis charge gap reflects the three-dimensional character of the electronic structure and of the magnetism in the iron arsenides.

  14. Multi-spectral optical absorption in substrate-free nanowire arrays

    International Nuclear Information System (INIS)

    A method is presented of fabricating gallium arsenide (GaAs) nanowire arrays of controlled diameter and period by reactive ion etching of a GaAs substrate containing an indium gallium arsenide (InGaP) etch stop layer, allowing the precise nanowire length to be controlled. The substrate is subsequently removed by selective etching, using the same InGaP etch stop layer, to create a substrate-free GaAs nanowire array. The optical absorptance of the nanowire array was then directly measured without absorption from a substrate. We directly observe absorptance spectra that can be tuned by the nanowire diameter, as explained with rigorous coupled wave analysis. These results illustrate strong optical absorption suitable for nanowire-based solar cells and multi-spectral absorption for wavelength discriminating photodetectors. The solar-weighted absorptance above the bandgap of GaAs was 94% for a nanowire surface coverage of only 15%.

  15. Experimental '' of As at 170, 200, 250 and 300 K from the Bijvoet pairs of GaAs

    Indian Academy of Sciences (India)

    G Raja Sudha; K Vimala Devi; D Arthi; S Prasanna Subramanian; N Srinivasan; R Saravanan

    2002-08-01

    Anomalous dispersion effects lead to the modification of the measured X-ray structure factors. In this work, we have determined the imaginary part of the anomalous dispersion correction terms ('' ) of arsenide atom (As), through the X-ray data collected using spherical single crystal of GaAs, at various temperatures, i.e. 170, 200, 250 and 300 K. It is stressed that more measurements of '' of the elements are needed to confirm the theoretical calculations.

  16. Monolithic AlGaAs second-harmonic nanoantennas

    CERN Document Server

    Gili, V F; Locatelli, A; Rocco, D; Finazzi, M; Ghirardini, L; Favero, I; Gomez, C; Lemaître, A; Celebrano, M; De Angelis, C; Leo, G

    2016-01-01

    We demonstrate monolithic aluminum gallium arsenide (AlGaAs) optical anoantennas. Using a selective oxidation technique, we fabricate such epitaxial semiconductor nanoparticles on an aluminum oxide substrate. Second harmonic generation from an AlGaAs nanocylinder of height h=400 nm and varying radius pumped with femtosecond pulses delivered at 1554-nm wavelength has been measured, revealing a peak conversion efficiency exceeding 10-5 for nanocylinders with an otpimized geometry.

  17. Rapid, Sensitive, and Reusable Detection of Glucose by a Robust Radiofrequency Integrated Passive Device Biosensor Chip

    OpenAIRE

    Nam-Young Kim; Kishor Kumar Adhikari; Rajendra Dhakal; Zorigt Chuluunbaatar; Cong Wang; Eun-Soo Kim

    2015-01-01

    Tremendous demands for sensitive and reliable label-free biosensors have stimulated intensive research into developing miniaturized radiofrequency resonators for a wide range of biomedical applications. Here, we report the development of a robust, reusable radiofrequency resonator based integrated passive device biosensor chip fabricated on a gallium arsenide substrate for the detection of glucose in water-glucose solutions and sera. As a result of the highly concentrated electromagnetic ener...

  18. Preparation and properties of GaInP.sub.2./sub./GaAs heterostructures

    Czech Academy of Sciences Publication Activity Database

    Nohavica, Dušan; Gladkov, Petar; Žďánský, Karel

    Praha: MAXDORF, 2004 - (Nitsch, K.; Rodová, M.), s. 45-46 ISBN 80-7345-032-1. [Development of Materials Science in Research and Education - DMS -RE 2004 /14./. Lednice (CZ), 31.08.2004-03.09.2004] R&D Projects: GA MŠk(CZ) ME 610 Institutional research plan: CEZ:AV0Z2067918 Keywords : gallium arsenide * indium compounds * semiconductors Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering

  19. Determination of the effective mechanism of chemically stimulated diffusion in semiconductors at their interaction with an atomic hydrogen

    International Nuclear Information System (INIS)

    Paper is devoted to calculate coefficients of chemically stimulated diffusion (CSD) of some impurities in near-the-surface layers of germanium and gallium arsenide following well-known mechanisms to determine governing mechanism of CSD depending on type of diffusing impurity and conditions to carry out experiment. Calculation results of CSD coefficients following the mentioned mechanisms for copper in germanium showed that their efficiency was rather unimpressive in contrast to CSD mechanisms associated with energy transfer to crystal atomic subsystem

  20. Laser therapy in the treatment of nonspecific lung diseases in children.

    OpenAIRE

    Lola Muhamadieva

    2010-01-01

    Endobronchial laser therapy was used in children with nonspecific lung diseases. Effectiveness of laser therapy was evaluated by use of cytogram of bronchoalveolar lavage fluid (BALF). There was observation of 29 children with nonspecific lung diseases: they had been performed endobronchial laser therapy with use of gallium arsenide laser. This investigation has proved the effectiveness of laser therapy, and the method is recommended for treatment of nonspecific lung diseases in children.

  1. Use of accelerated helium-3 ions for determining oxygen and carbon impurities in some pure materials

    Science.gov (United States)

    Aleksandrova, G. I.; Borisov, G. I.; Demidov, A. M.; Zakharov, Y. A.; Sukhov, G. V.; Shmanenkova, G. I.; Shchelkova, V. P.

    1978-01-01

    Methods are developed for the determination of O impurity in Be and Si carbide and concurrent determination of C and O impurities in Si and W by irradiation with accelerated He-3 ions and subsequent activity measurements of C-11 and F-18 formed from C and O with the aid of a gamma-gamma coincidence spectrometer. Techniques for determining O in Ge and Ga arsenide with radiochemical separation of F-18 are also described.

  2. Time-resolved lasing action from single and coupled photonic crystal nanocavity array lasers emitting in the telecom-band

    CERN Document Server

    Englund, Dirk; Vuckovic, Jelena

    2008-01-01

    We measure the lasing dynamics of single and coupled photonic crystal nanocavity array lasers fabricated in the indium gallium arsenide phosphide material system. Under short optical excitation, single cavity lasers produce pulses as fast as 11 ps (FWHM), while coupled cavity lasers show significantly longer lasing duration which is not explained by a simple rate equations model. A Finite Difference Time Domain simulation including carrier gain and diffusion suggests that asynchronous lasing across the nanocavity array extends the laser's pulse duration.

  3. Improved optomechanical disk resonator sitting on a pedestal mechanical shield

    International Nuclear Information System (INIS)

    We experimentally demonstrate the controlled enhancement of the mechanical quality factor Q of gallium arsenide disk optomechanical resonators. Disks vibrating at 1.3 GHz with a mechanical shield integrated in their pedestal show a Q improvement by a factor 10–16. The structure is modeled numerically and different modes of vibration are observed, which shed light on the Q enhancement mechanism. An optimized double-disk geometry is presented that promises Q above the million for a large parameter range. (paper)

  4. Single and multiband THz Metamaterial Polarizers

    OpenAIRE

    Sangala, Bagvanth Reddy; Nagarajan, Arvind; Deshmukh, Prathmesh; Surdi, Harshad; Rana, Goutam; Gopal, Achanta Venu; Prabhu, S. S.

    2015-01-01

    We report single and multiband linear polarizers for terahertz (THz) frequencies using cut-wire metamaterials (MM). The MMs are designed by finite element method, fabricated by electron beam lithography, and characterized by THz time-domain spectroscopy. The MM unit cells consist of single or multiple length cut-wire pads of gold on semi-insulating Gallium Arsenide for single or multiple band polarizers. The dependence of the resonance frequency of the single band polarizer on the length of t...

  5. Description of an Immersed Photovoltaic Concentrating Solar Power System

    OpenAIRE

    Falbel, Gerald

    1998-01-01

    Recent advancements in photovoltaic solar cells made from Gallium Arsenide (GaAs) have shown that with concentration ratios greater than one solar constant, overall efficiencies up to 23% can be achieved. A second issue applicable to solar power systems for spacecraft is the cost driver, which requires that the efficiency/weight ratio be improved so that solar panels with high output, weighing less, will reduce payload weights, which, in turn, reduces launch costs. This has resulted in a "Fig...

  6. Embedment of metal nanoparticles in GaAs and Si for plasmonic absorption enhancement in intermediate band solar cells

    OpenAIRE

    Moura Dias Mendes, Manuel Joao de; Hernández Martín, Estela; Tobías Galicia, Ignacio; Martí Vega, Antonio; Luque López, Antonio

    2010-01-01

    The high near-field enhancement occurring in the vicinity of metallic nanoparticles (MNPs) sustaining surface plasmons can only be fully exploited in photovoltaic devices if the MNPs are placed inside their semiconducting material, in the photoactive region. In this work an experimental procedure is studied to embed MNPs in gallium arsenide (GaAs) and silicon (Si), which can be applied to other semiconductor host materials. The approach consists in spin-coating colloidal MNPs dispersed i...

  7. Anisotropic magneto-capacitance in ferromagnetic-plate capacitors

    OpenAIRE

    Haigh, J. A.; Ciccarelli, C; Betz, A. C.; Irvine, A; Novák, V.; Jungwirth, T.; Wunderlich, J.

    2015-01-01

    The capacitance of a parallel plate capacitor can depend on applied magnetic field. Previous studies have identified capacitance changes induced via classical Lorentz force or spin-dependent Zeeman effects. Here we measure a magnetization direction dependent capacitance in parallel-plate capacitors where one plate is a ferromagnetic semiconductor, gallium manganese arsenide. This anisotropic magneto-capacitance is due to the anisotropy in the density of states dependent on the magnetization t...

  8. Small Business Innovations (Photodetector)

    Science.gov (United States)

    1991-01-01

    Epitaxx, Inc. of Princeton, NJ, developed the Epitaxx Near Infrared Room Temperature Indium-Gallium-Arsenide (InGaAs) Photodetector based on their Goddard Space Flight Center Small Business Innovation Research (SBIR) contract work to develop a linear detector array for satellite imaging applications using InGaAs alloys that didn't need to be cooled to (difficult and expensive) cryogenic temperatures. The photodetectors can be used for remote sensing, fiber optic and laser position-sensing applications.

  9. Use of a semiconductor-diode laser in urology

    Science.gov (United States)

    Watson, Graham M.

    1994-05-01

    The gallium arsenide semiconductor laser can emit in the near infrared where the depth of penetration into tissue is great although scattering is less than with the Nd:YAG laser. The laser is highly compact. It runs off a normal electrical outlet with no cooling requirement. It is therefore quiet and convenient. The laser has been assessed in a wide variety of applications in our urological department.

  10. Near K-edge linear attenuation coefficients for amorphous and crystalline GaAs

    International Nuclear Information System (INIS)

    We present tabulated near K-edge linear attenuation coefficients for stoichiometric crystalline and amorphous gallium arsenide. The coefficients were derived from total electron yield photocurrent measurements at the Daresbury Synchrotron Radiation Source and show considerable near-edge structure when compared to curves generated from standard atomic data tables. However, very little difference is found between the crystalline and amorphous samples, suggesting that the bulk of the structure arises from the local coordination environment

  11. Satellite power system: Concept development and evaluation program, reference system report

    Science.gov (United States)

    1979-01-01

    The Satellite Power System (SPS) Reference System is discussed and the technical and operational information required in support of environmental, socioeconomic, and comparative assessment studies are emphasized. The reference System concept features a gallium-aluminum-arsenide, and silicon solar cell options. Other aspects of an SPS are the construction of bases in space, launch and mission control bases on earth, and fleets of various transportation vehicles to support the construction and maintenance operations of the satellites.

  12. Results from the high efficiency solar panel experiment flown on CRRES

    International Nuclear Information System (INIS)

    This paper presents results from the High Efficiency Solar Panel Experiment (HESP) flown on the Combined Release and Radiation Effects Satellite (CRRES). The on-orbit solar cell degradation is correlated with the proton and electron environments. Comparisons between gallium arsenide germanium (GaAs/Ge) and silicon (Si) solar cells are presented, and results from three different annealing methods of like GaAs solar cells are compared

  13. Improved retrieval of gas abundances from near-infrared solar FTIR spectra measured at the Karlsruhe TCCON station

    OpenAIRE

    Kiel, M.; Wunch, D.; Wennberg, P. O.; Toon, G. C.; Hase, F.; Blumenstock, T.

    2016-01-01

    We present a modified retrieval strategy for solar absorption spectra recorded by the Karlsruhe Fourier Transform Infrared (FTIR) spectrometer, which is operational within the Total Carbon Column Observing Network (TCCON). In typical TCCON stations, the 3800–11 000 cm−1 spectral region is measured on a single extended Indium Gallium Arsenide (InGaAs) detector. The Karlsruhe setup instead splits the spectrum across an Indium Antimonide (InSb) and InGaAs detecto...

  14. High-Temperature Superconductivity in Doped BaFe2As2

    International Nuclear Information System (INIS)

    This thesis provides a detailed look on the synthesis, structural features and physical properties of iron arsenides. Especially the properties of BaFe2As2 and the solid solutions (Ba1-xKx)Fe2As2, (Ba1-xSrx)Fe2As2 and BaFe2(As1-xPx)2 which were all synthesized by solid state reactions by heating mixtures of the elements, were intensively investigated.

  15. Thermionic photovoltaic energy converter

    Science.gov (United States)

    Chubb, D. L. (Inventor)

    1985-01-01

    A thermionic photovoltaic energy conversion device comprises a thermionic diode mounted within a hollow tubular photovoltaic converter. The thermionic diode maintains a cesium discharge for producing excited atoms that emit line radiation in the wavelength region of 850 nm to 890 nm. The photovoltaic converter is a silicon or gallium arsenide photovoltaic cell having bandgap energies in this same wavelength region for optimum cell efficiency.

  16. The effectiveness of low laser therapy in subacromial impingement syndrome: a randomized placebo controlled double‐blind prospective study

    OpenAIRE

    Sebnem Koldas Dogan; Saime Ay; Deniz Evcik

    2010-01-01

    OBJECTIVES: Conflicting results were reported about the effectiveness of Low level laser therapy on musculoskeletal disorders. The aim of this study was to investigate the effectiveness of 850-nm gallium arsenide aluminum (Ga-As-Al) laser therapy on pain, range of motion and disability in subacromial impingement syndrome. METHODS: A total of 52 patients (33 females and 19 males with a mean age of 53.59±11.34 years) with subacromial impingement syndrome were included. The patients were randoml...

  17. Spatial light modulation in compound semiconductor materials

    Science.gov (United States)

    Cheng, Li-Jen (Inventor); Gheen, Gregory O. (Inventor); Partovi, Afshin (Inventor)

    1990-01-01

    Spatial light modulation (22) in a III-V single crystal (12), e.g., gallium arsenide, is achieved using the photorefractive effect. Polarization rotation created by beam coupling is utilized in one embodiment. In particular, information (16)on a control beam (14) incident on the crystal is transferred to an input beam (10), also incident on the crystal. An output beam (18) modulated in intensity is obtained by passing the polarization-modulated input beam through a polarizer (20).

  18. Low temperature transport in p-doped InAs nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Upadhyay, S.; Jespersen, T. S.; Madsen, M. H.; Krogstrup, P.; Nygård, J. [Center for Quantum Devices and Nano-Science Center, Niels Bohr Institute, University of Copenhagen, Universitetsparken 5, DK-2100 Copenhagen (Denmark)

    2013-10-14

    We present low temperature electrical measurements of p-type Indium Arsenide nanowires grown via molecular beam epitaxy using Beryllium as a dopant. Growth of p-type wires without stacking faults is demonstrated. Devices in field-effect geometries exhibit ambipolar behavior, and the temperature dependence of electron and hole field effect mobilities are extracted. At low temperatures, we observe reproducible conductance fluctuations as a result of quantum interference, and magnetoconductance data show weak antilocalization.

  19. System testing for a high speed 1024 channel transient digitizer system

    International Nuclear Information System (INIS)

    A test system for a 1024 channel high speed (500MHz) transient digitizer system is described. Each channel consists of a 128 element gallium arsenide charge coupled device which is read out (at 32MHz) into a FASTBUS module incorporating a custom gate array for data compaction. The transient digitizer is designed for use in Experiment 787 at Brookhaven National Laboratory. Results are presented from both prototype and production testing. (author). 4 refs., 6 figs

  20. Textural, mineralogical and stable isotope studies of hydrothermal alteration in the main sulfide zone of the Great Dyke, Zimbabwe and the precious metals zone of the Sonju Lake Intrusion, Minnesota, USA

    Science.gov (United States)

    Li, C.; Ripley, E.M.; Oberthur, T.; Miller, J.D., Jr.; Joslin, G.D.

    2008-01-01

    Stratigraphic offsets in the peak concentrations of platinum-group elements (PGE) and base-metal sulfides in the main sulfide zone of the Great Dyke and the precious metals zone of the Sonju Lake Intrusion have, in part, been attributed to the interaction between magmatic PGE-bearing base-metal sulfide assemblages and hydrothermal fluids. In this paper, we provide mineralogical and textural evidence that indicates alteration of base-metal sulfides and mobilization of metals and S during hydrothermal alteration in both mineralized intrusions. Stable isotopic data suggest that the fluids involved in the alteration were of magmatic origin in the Great Dyke but that a meteoric water component was involved in the alteration of the Sonju Lake Intrusion. The strong spatial association of platinum-group minerals, principally Pt and Pd sulfides, arsenides, and tellurides, with base-metal sulfide assemblages in the main sulfide zone of the Great Dyke is consistent with residual enrichment of Pt and Pd during hydrothermal alteration. However, such an interpretation is more tenuous for the precious metals zone of the Sonju Lake Intrusion where important Pt and Pd arsenides and antimonides occur as inclusions within individual plagioclase crystals and within alteration assemblages that are free of base-metal sulfides. Our observations suggest that Pt and Pd tellurides, antimonides, and arsenides may form during both magmatic crystallization and subsolidus hydrothermal alteration. Experimental studies of magmatic crystallization and hydrothermal transport/deposition in systems involving arsenides, tellurides, antimonides, and base metal sulfides are needed to better understand the relative importance of magmatic and hydrothermal processes in controlling the distribution of PGE in mineralized layered intrusions of this type. ?? Springer-Verlag 2007.

  1. High-Speed Semiconductor Lasers based on Low-Dimensional Active Materials for Optical Telecommunication

    OpenAIRE

    Gilfert, Christian Jürgen

    2012-01-01

    The scope of this work is the fundamental growth, tailoring and characterization of self-organized indium arsenide quantum dots (QDs) and their exploitation as active region for diode lasers emitting in the 1.55 µm range. This wavelength regime is especially interesting for long-haul telecommunications as optical fibers made from silica glass have the lowest optical absorption. Molecular Beam Epitaxy is utilized as fabrication technique for the quantum dots and laser structures. The results p...

  2. Integrated Semiconductor Optical Sensors for Chronic, Minimally-Invasive Imaging of Brain Function

    OpenAIRE

    Lee, Thomas T.; Levi, Ofer; Cang, Jianhua; Kaneko, Megumi; Stryker, Michael P.; Smith, Stephen J; Shenoy, Krishna V.; Harris, James S.

    2006-01-01

    Intrinsic Optical Signal (IOS) imaging is a widely accepted technique for imaging brain activity. We propose an integrated device consisting of interleaved arrays of gallium arsenide (GaAs) based semiconductor light sources and detectors operating at telecommunications wavelengths in the near-infrared. Such a device will allow for long-term, minimally invasive monitoring of neural activity in freely behaving subjects, and will enable the use of structured illumination patterns to improve syst...

  3. Photocurrent response of B12As2 crystals to blue light, and its temperature- dependent electrical characterizations

    OpenAIRE

    R. Gul; CUI, Y.; A. E. Bolotnikov; Camarda, G.S.; S. U. Egarievwe; Hossain, A.; U. N. Roy; G. Yang; Edgar, J. H.; U. Nwagwu; James, R. B.

    2016-01-01

    With the global shortage of 3He gas, researchers worldwide are looking for alternative materials for detecting neutrons. Among the candidate materials, semiconductors are attractive because of their light weight and ease in handling. Currently, we are looking into the suitability of boron arsenide (B12As2) for this specific application. As the first step in evaluating the material qualitatively, the photo-response of B12As2 bulk crystals to light with different wavelengths was examined. The ...

  4. EFFECTS OF OPERATING CONDITIONS ON THE DEPOSITION OF GaAs IN A VERTICAL CVD REACTOR

    OpenAIRE

    JAE-SANG BAEK; JIN-HYO BOO; YOUN-JEA KIM

    2008-01-01

    A numerical study is needed to gain insight into the growth mechanism and improve the reactor design or optimize the deposition condition in chemical vapor deposition (CVD). In this study, we have performed a numerical analysis of the deposition of gallium arsenide (GaAs) from trimethyl gallium (TMG) and arsine in a vertical CVD reactor. The effects of operating parameters, such as the rotation velocity of susceptor, inlet velocity, and inlet TMG fraction, are investigated and presented. The ...

  5. On-Chip Picosecond Pulse Detection and Generation Using Graphene Photoconductive Switches

    OpenAIRE

    Hunter, Nicholas; Mayorov, Alexander S.; Christopher D. Wood; Russell, Christopher; Li, Lianhe; Linfield, Edmund H.; Davies, A. Giles; Cunningham, John E.

    2015-01-01

    We report on the use of graphene for room temperature on-chip detection and generation of pulsed terahertz (THz) frequency radiation, exploiting the fast carrier dynamics of light-generated hot carriers, and compare our results with conventional low-temperature-grown gallium arsenide (LT-GaAs) photoconductive (PC) switches. Coupling of picosecond-duration pulses from a biased graphene PC switch into Goubau line waveguides is also demonstrated. A Drude transport model based on the transient ph...

  6. Low power laser irradiation does not affect the generation of signals in a sensory receptor

    Energy Technology Data Exchange (ETDEWEB)

    Lundeberg, T.; Zhou, J.

    1989-01-01

    The effect of low power Helium-Neon (He-Ne) and Gallium-Arsenide (Ga-As) laser on the slowly adapting crustacean stretch receptor was studied. The results showed that low power laser irradiation did not affect the membrane potential of the stretch receptor. These results are discussed in relation to the use of low power laser irradiation on the skin overlaying acupuncture points in treatment of pain syndrome.

  7. Space station automation study. Automation requirements derived from space manufacturing concepts. Volume 1: Executive summary

    Science.gov (United States)

    1984-01-01

    The two manufacturing concepts developed represent innovative, technologically advanced manufacturing schemes. The concepts were selected to facilitate an in depth analysis of manufacturing automation requirements in the form of process mechanization, teleoperation and robotics, and artificial intelligence. While the cost effectiveness of these facilities has not been analyzed as part of this study, both appear entirely feasible for the year 2000 timeframe. The growing demand for high quality gallium arsenide microelectronics may warrant the ventures.

  8. Heat load of a GaAs photocathode in an SRF electron gun

    Institute of Scientific and Technical Information of China (English)

    WANG Er-Dong; ZHAO Kui; J(o)rg Kewisch; Ilan Ben-Zvi; Andrew Burrill; Trivini Rao; WU Qiong; Animesh Jain; Ramesh Gupta; Doug Holmes

    2011-01-01

    A great deal of effort has been made over the last decades to develop a better polarized electron source for high energy physics. Several laboratories operate DC guns with a gallium arsenide photocathode, which yield a highly polarized electron beam. However, the beam's emittance might well be improved by using a superconducting radio frequency (SRF) electron gun, which delivers beams of a higher brightness than that from DC guns because the field gradient at the cathode is higher. SRF guns with metal and CsTe cathodes have been tested successfully. To produce polarized electrons, a Gallium-Arsenide photo-cathode must be used: an experiment to do so in a superconducting RF gun is under way at BNL. Since a bulk gallium arsenide (GaAs) photocathode is normal conducting, a problem arises from the heat load stemming from the cathode. We present our measurements of the electrical resistance of GaAs at cryogenic temperatures, a prediction of the heat load and verification by measuring the quality factor of the gun with and without the cathode at 2 K. We simulate heat generation and flow from the GaAs cathode using the ANSYS program. By following the findings with the heat load model, we designed and fabricated a new cathode holder (plug) to decrease the heat load from GaAs.

  9. Neutron radiography for nondestructive testing

    International Nuclear Information System (INIS)

    Neutron radiography is similar to X-ray inspection in that both depend upon use of radiation that penetrates some materials and is absorbed by others to provide a contrast image of conditions not readily available for visual inspection. X-rays are absorbed by dense materials, such as metals, whereas neutrons readily penetrate metals, but are absorbed by materials containing hydrogen. The neutron radiography has been successfully applied to a number of inspection situations. These include the inspection of explosives, advanced composites, adhesively bonded structures and a number of aircraft engine components. With the availability of Californium-252, it has become feasible to construct mobile neutron radiography systems suitable for field use. Such systems have been used for in-situ inspection of flight line aircraft, particularly to locate and measure hidden corrosion

  10. Preparation of actinide targets by electrodeposition

    Science.gov (United States)

    Trautmann, N.; Folger, H.

    1989-10-01

    Actinide targets with varying thicknesses on different substrates have been prepared by electrodeposition either from aqueous solutions or from solutions of their nitrates in isopropyl alcohol. With these techniques the actinides can be deposited almost quantitatively on various backing materials within 15 to 30 min. Targets of thorium, uranium, neptunium, plutonium, americium, curium and californium with areal densities from almost carrier-free up to 1.4 mg/cm 2 on thin beryllium, carbon, titanium, tantalum and platinum foils have been prepared. In most cases, prior to the deposition, the actinides had to be purified chemically and for some of them, due to the limited amount of material available, recycling procedures were required. Applications of actinide targets in heavy-ion reactions are briefly discussed.

  11. An atomic beam source for actinide elements: concept and realization

    International Nuclear Information System (INIS)

    For ultratrace analysis of actinide elements and studies of their atomic properties with resonance ionization mass spectroscopy (RIMS), efficient and stable sources of actinide atomic beams are required. The thermodynamics and kinetics of the evaporation of actinide elements and oxides from a variety of metals were considered, including diffusion, desorption, and associative desorption. On this basis various sandwich-type filaments were studied. The most promising system was found to consist of tantalum as the backing material, an electrolytically deposited actinide hydroxide as the source of the element, and a titanium covering layer for its reduction to the metal. Such sandwich sources were experimentally proven to be well suited for the production of atomic beams of plutonium, curium, berkelium and californium at relatively low operating temperatures and with high and reproducible yields. (orig.)

  12. Environmental assessment of the thermal neutron activation explosive detection system for concourse use at US airports

    International Nuclear Information System (INIS)

    This document is an environmental assessment of a system designed to detect the presence of explosives in checked airline baggage or cargo. The system is meant to be installed at the concourse or lobby ticketing areas of US commercial airports and uses a sealed radioactive source of californium-252 to irradiate baggage items. The major impact of the use of this system arises from direct exposure of the public to scattered or leakage radiation from the source and to induced radioactivity in baggage items. Under normal operation and the most likely accident scenarios, the environmental impacts that would be created by the proposed licensing action would not be significant. 44 refs., 19 figs., 18 tabs

  13. A comparative study of bulk etch rate measurement methods in polycarbonate detectors

    International Nuclear Information System (INIS)

    The response of a plastic detector to an incoming charged particle is given by the ratio of track etch rate vt to bulk etch rate vg along its path. Although the accurate determination of vt offers no difficulty as cone length can be comfortably measured, there seems to be a certain ambiguity as how to measure vg. Several LEXAN and TUFFAK polycarbonate plates have been exposed to normally incident Californium-252 fission fragments, etched in a stirred aqueous NaOH solution saturated with etch products and with a 0.05% of Dowfax surfactant, for different etching times, concentrations and temperatures. We have used three methods to measure vg and we obtain consistent results in agreement with those published in the literature. Surface quality and, consequently, ellipses neatness, are far superior in TUFFAK than in LEXAN. (author)

  14. A Novel Approach to β-delayed Neutron Spectroscopy Using the Beta-decay Paul Trap

    International Nuclear Information System (INIS)

    A new approach to β-delayed neutron spectroscopy has been demonstrated that circumvents the many limitations associated with neutron detection by instead inferring the decay branching ratios and energy spectra of the emitted neutrons by studying the nuclear recoil. Using the Beta-decay Paul Trap, fission-product ions were trapped and confined to within a 1-mm3 volume under vacuum using only electric fields. Results from recent measurements of 137I+ and plans for development of a dedicated ion trap for future experiments using the intense fission fragment beams from the Californium Rare Isotope Breeder Upgrade (CARIBU) facility at Argonne National Laboratory are summarized. The improved nuclear data that can be collected is needed in many fields of basic and applied science such as nuclear energy, nuclear astrophysics, and stockpile stewardship

  15. Devices for rapid protein determination in grain products and mixed feeds by the neutron method

    International Nuclear Information System (INIS)

    Protein determination should be carried out using rapid techniques so that each truckful of grain can be checked for protein while mixed feeds can be checked for protein directly in the product flow lines with automatic correction of their work. The existing methods of protein determination do not meet the above requirements. In this connection, the Azot analyzer has beem developed based on the reaction of capture of thermal neutrons by the nuclei of the nitrogen present in the analyzed product and the registration of the resulting gamma-quanta emission of 10.8 Mev. Readings of the nitrogen will be converted to those of protein with the help of standard conversion coefficients. Alongside with protein content, the Azot can measure the test weight of the grain by absorbing californium 252 neutrons

  16. Probe for the exploration of deposits

    International Nuclear Information System (INIS)

    The exploration probes work by means of a prompt (n,γ) analysis, activation analysis or X-ray fluorescence analysis. The neutrons or gamma radiation are provided by a californium-252 source or a cobalt-57 source which are placed in the probe. The probe is in the form of a pipe consisting of single modules. Each module contains a part of the whole radiation producing, shielding, detector, detector cooling and detector electronic system. They can be screwed onto one another and can be exchanged for other parts. A melt cryostatat or a compressor is used as cooling device, a germanium-(Li) detector as detector, and bismuth and heavy water as shielding. All measuring process can thus be carried out in situ in a relatively short measuring time. (DG)

  17. Robotics and remote systems applications

    International Nuclear Information System (INIS)

    This article is a review of numerous remote inspection techniques in use at the Savannah River (and other) facilities. These include: (1) reactor tank inspection robot, (2) californium waste removal robot, (3) fuel rod lubrication robot, (4) cesium source manipulation robot, (5) tank 13 survey and decontamination robots, (6) hot gang valve corridor decontamination and junction box removal robots, (7) lead removal from deionizer vessels robot, (8) HB line cleanup robot, (9) remote operation of a front end loader at WIPP, (10) remote overhead video extendible robot, (11) semi-intelligent mobile observing navigator, (12) remote camera systems in the SRS canyons, (13) cameras and borescope for the DWPF, (14) Hanford waste tank camera system, (15) in-tank precipitation camera system, (16) F-area retention basin pipe crawler, (17) waste tank wall crawler and annulus camera, (18) duct inspection, and (19) deionizer resin sampling

  18. Utilization of radiation facilities at TNRC for shielding researches and related topics

    International Nuclear Information System (INIS)

    This paper presents the running shielding research activities at Tajura Nuclear research center. The main area of researches are concentrated on the investigation of different types of concrete made from local materials such as conventional concrete, Magnetite-Limonite concrete, and heat resistant concrete. The measuring techniques used were neutron-gamma spectrometry, and activation foils. The measurements were performed using collimated beam of reactor neutrons emitted from one of the horizontal channels, as well as from californium-252 neutron source. The transmitted neutron spectra through concrete barriers of different thicknesses were measured by a scintillation spectrometer with NE-213 liquid organic scintillator. A non-destructive testing of some reactor materials were also carried out using neutron and gamma ray computerized tomography technique (CT). Some experiments were also carried out related to measurements of neutron depth dose distributions inside tissue equivalent materials. 10 figs

  19. Nuclear fission and the transuranium elements

    International Nuclear Information System (INIS)

    Many of the transuranium elements are produced and isolated in large quantities through the use of neutrons furnished by nuclear fission reactions: plutonium (atomic number 94) in ton quantities; neptunium (93), americium (95), and curium (96) in kilogram quantities; berkelium (97) in 100 milligram quantities; californium (98) in gram quantities; and einsteinium (99) in milligram quantities. Transuranium isotopes have found many practical applications---as nuclear fuel for the large-scale generation of electricity, as compact, long-lived power sources for use in space exploration, as means for diagnosis and treatment in the medical area, and as tools in numerous industrial processes. Of particular interest is the unusual chemistry and impact of these heaviest elements on the periodic table. This account will feature these aspects. 9 refs., 5 figs

  20. Potential nuclear safeguards applications for neutron generators

    International Nuclear Information System (INIS)

    Many nuclear safeguards inspection instruments use neutron sources to interrogate the fissile material (commonly 235U and 239Pu) to be measured. The neutron sources currently used in these instruments are isotopics such as Californium-252, Americium-Lithium, etc. It is becoming increasingly more difficult to transport isotopic sources from one measurement location to another. This represents a significant problem for the International Atomic Energy Agency (IAEA) safeguards inspectors because they must take their safeguards instruments with them to each nuclear installation to make an independent measurement. Purpose of this paper is to review the possibility of replacing isotopic neutron sources now used in IAEA safeguards instruments with electric neutron sources such as deuterium-tritium (D-T, 14-MeV neutrons) or deuterium-deuterium (D-D, 2-MeV neutrons). The potential for neutron generators to interrogate spent-light water reactor fuel assemblies in storage pools is also reviewed

  1. Reliability of semiconductor and gas-filled diodes for over-voltage protection exposed to ionizing radiation

    Directory of Open Access Journals (Sweden)

    Stanković Koviljka

    2009-01-01

    Full Text Available The wide-spread use of semiconductor and gas-filled diodes for non-linear over-voltage protection results in a variety of possible working conditions. It is therefore essential to have a thorough insight into their reliability in exploitation environments which imply exposure to ionizing radiation. The aim of this paper is to investigate the influence of irradiation on over-voltage diode characteristics by exposing the diodes to californium-252 combined neutron/gamma radiation field. The irradiation of semiconductor over-voltage diodes causes severe degradation of their protection characteristics. On the other hand, gas-filled over-voltage diodes exhibit a temporal improvement of performance. The results are presented with the accompanying theoretical interpretations of the observed changes in over-voltage diode behaviour, based on the interaction of radiation with materials constituting the diodes.

  2. Measurements of the neutron capture cross sections and incineration potentials of minor-actinides in high thermal neutron fluxes: Impact on the transmutation of nuclear wastes

    International Nuclear Information System (INIS)

    This thesis comes within the framework of minor-actinide nuclear transmutation studies. First of all, we have evaluated the impact of minor actinide nuclear data uncertainties within the cases of 241Am and 237Np incineration in three different reactor spectra: EFR (fast), GT-MHR (epithermal) and HI-HWR (thermal). The nuclear parameters which give the highest uncertainties were thus highlighted. As a result of fact, we have tried to reduce data uncertainties, in the thermal energy region, for one part of them through experimental campaigns in the moderated high intensity neutron fluxes of ILL reactor (Grenoble). These measurements were focused onto the incineration and transmutation of the americium-241, the curium-244 and the californium-249 isotopes. Finally, the values of 12 different cross sections and the 241Am isomeric branching ratio were precisely measured at thermal energy point. (author)

  3. Multi-purpose neutron radiography system

    International Nuclear Information System (INIS)

    A conceptual design is given for a low cost, multipurpose radiography system suited for the needs of the Los Alamos National Laboratory (LANL). The proposed neutron source is californium-252. One purpose is to provide an in-house capability for occasional, reactor quality, neutron radiography thus replacing the recently closed Omega-West Reactor. A second purpose is to provide a highly reliable standby transportable neutron radiography system. A third purpose is to provide for transportable neutron probe gamma spectroscopy techniques. The cost is minimized by shared use of an existing x-ray facility, and by use of an existing transport cask. The achievable neutron radiography and radioscopy performance characteristics have been verified. The demonstrated image qualities range from high resolution gadolinium - SR film, with L:D = 100:1, to radioscopy using a LIXI image with L:D = 30:1 and neutron fluence 3.4 x 105 n/cm2

  4. Measurements of the neutron capture cross sections and incineration potentials of minor-actinides in high thermal neutron fluxes: Impact on the transmutation of nuclear wastes; Mesures des sections efficaces de capture et potentiels d'incineration des actinides mineurs dans les hauts flux de neutrons: Impact sur la transmutation des dechets

    Energy Technology Data Exchange (ETDEWEB)

    Bringer, O

    2007-10-15

    This thesis comes within the framework of minor-actinide nuclear transmutation studies. First of all, we have evaluated the impact of minor actinide nuclear data uncertainties within the cases of {sup 241}Am and {sup 237}Np incineration in three different reactor spectra: EFR (fast), GT-MHR (epithermal) and HI-HWR (thermal). The nuclear parameters which give the highest uncertainties were thus highlighted. As a result of fact, we have tried to reduce data uncertainties, in the thermal energy region, for one part of them through experimental campaigns in the moderated high intensity neutron fluxes of ILL reactor (Grenoble). These measurements were focused onto the incineration and transmutation of the americium-241, the curium-244 and the californium-249 isotopes. Finally, the values of 12 different cross sections and the {sup 241}Am isomeric branching ratio were precisely measured at thermal energy point. (author)

  5. Triton and alpha-particle contribution from LiF converter for neutron dosimeter

    CERN Document Server

    Camacho, M E; Balcazar, M

    1999-01-01

    A personnel neutron dosimeter prototype based on chemical and electrochemical etched CR-39 detector, combined with LiF converter, has been calibrated using an ICRP-like phantom, under a heavy-water moderated Californium source neutron spectra; A conversion factor of 1.052+-126 spots cm sup - sup 2 mSv sup - sup 1 was obtained. The sealing properties of the detector holder showed a ten-fold reduction in radon background when it was tested in a high radon atmosphere. A convenient mechanical shock resistance was achieved in LiF converters by sintering to 11 tons pressure LiF powder at 650 deg. C, during one hour.

  6. Nuclear fission and the transuranium elements

    Energy Technology Data Exchange (ETDEWEB)

    Seaborg, G.T.

    1989-02-01

    Many of the transuranium elements are produced and isolated in large quantities through the use of neutrons furnished by nuclear fission reactions: plutonium (atomic number 94) in ton quantities; neptunium (93), americium (95), and curium (96) in kilogram quantities; berkelium (97) in 100 milligram quantities; californium (98) in gram quantities; and einsteinium (99) in milligram quantities. Transuranium isotopes have found many practical applications---as nuclear fuel for the large-scale generation of electricity, as compact, long-lived power sources for use in space exploration, as means for diagnosis and treatment in the medical area, and as tools in numerous industrial processes. Of particular interest is the unusual chemistry and impact of these heaviest elements on the periodic table. This account will feature these aspects. 9 refs., 5 figs.

  7. General purpose nuclear irradiation chamber

    International Nuclear Information System (INIS)

    Nuclear technology has found a great need for use in medicine, industry, and research. Smoke detectors in our homes, medical treatments and new varieties of plants by irradiating its seeds are just a few examples of the benefits of nuclear technology. Portable neutron source such as Californium-252, available at Industrial Technology Division (BTI/ PAT), Malaysian Nuclear Agency, has a 2.645 year half-life. However, 252Cf is known to emit gamma radiation from the source. Thus, this chamber aims to provide a proper gamma shielding for samples to distinguish the use of mixed neutron with gamma-rays or pure neutron radiation. The chamber is compatible to be used with other portable neutron sources such as 241Am-Be as well as the reactor TRIGA PUSPATI for higher neutron dose. This chamber was designed through a collaborative effort of Kulliyyah Engineering, IIUM with the Industrial Technology Division (BTI) team, Malaysian Nuclear Agency. (Author)

  8. Experimental survey of the potential energy surfaces associated with fission

    International Nuclear Information System (INIS)

    Progress in the experimental determination of the properties of the potential energy surface associated with fission is reviewed. The importance of nuclear symmetry effects on the calculation of fission widths is demonstrated. Evidence is presented for the fragmentation of the mass-asymmetric second barrier in the thorium region and the axial asymmetric first barrier in the californium region. Detailed analyses of experimental data suggest the presence of two parallel second barriers; the normal mass-asymmetric, axial-symmetric barrier and a slightly higher mass-symmetric, axial-asymmetric barrier. Experimental barrier parameters are determined systematically and compared with calculations from various theoretical models. Techniques for expanding fission probability measurements to higher energies are discussed. (author)

  9. Separation of 248Cm (III) from 252Cf (III) and its use in time resolved fluorescence spectroscopic (TRFS) studies

    International Nuclear Information System (INIS)

    The present report gives a description of the methodology for the separation of 248Cm(III) from decayed 252Cf (III) waste solution. The waste solution was first assayed for 252Cf content by neutron counting using a neutron well coincidence counter. The sample was subjected to the chemical separation of 248Cm (III) from 252Cf (III) following anion and cation exchange chromatography. The alpha spectrum of the separated curium fraction showed peaks due to 246Cm and 248Cm while the corresponding alpha spectrum of californium fraction showed 249,250,251,252Cf. The gamma ray abundances of 249Cf were determined with respect to its gamma rays of 387 keV and the data agreed well with that in literature. Separated Cm(III) was further characterized by recording its time resolved fluorescence spectrum (TRFS) in aqueous medium. (author)

  10. Effects of 252Cf neutrons, transmitted through an iron block on human lymphocyte chromosome

    International Nuclear Information System (INIS)

    Chromosome aberration of human peripheral blood lymphocytes exposed to californium-252 (252Cf) neutrons transmitted through a 15 cm thick iron block was analysed. The spectrum of the filtered neutrons ranged from 0.1 to 2MeV with a peak at 0.7 MeV, simulating the Hiroshima atomic bomb neutron spectrum as shown in the Dosimetry System 1986 (DS86). Chromosome aberration frequencies after exposure to filtered and unfiltered 252Cf radiation were compared. Acentric ring chromosomes were significantly increased (p 0.1). The relative biological effectiveness (RBE) of the neutrons with respect to the formation of dicentrics and centric rings was 10.9 and 12.3 in the filtered and unfiltered conditions respectively, but the difference was not statistically significant. These results provide useful information for the re-evaluation of the biological effect of the Hiroshima atomic bomb radiations. (Author)

  11. Test and evaluation results of the 252Cf shuffler at the Savannah River Plant

    International Nuclear Information System (INIS)

    The 252Cf Shuffler, a nondestructive assay instrument employing californium neutron source irradiation and delayed-neutron counting, was developed for measuring 235U content of scrap and waste items generated at the Savannah River Plant (SRP) reactor fuel fabrication facility. The scrap and waste items include high-purity uranium-aluminum alloy ingots as well as pieces of castings, saw and lathe chips from machining operations, low-purity items such as oxides of uranium or uranium intermixed with flux materials found in recovery operations, and materials not recoverable at SRP such as floor sweepings or residues from the uranium scrap recovery operation. The uranium contains about 60% 235U with the remaining isotopes being 236U, 238U, and 234U in descending order. The test and evaluation at SRP concluded that the accuracy, safety, reliability, and ease of use made the 252Cf Shuffler a suitable instrument for routine use in an industrial, production-oriented plant

  12. Highly charged ions for atomic clocks and search for variation of the fine structure constant

    CERN Document Server

    Dzuba, V A

    2015-01-01

    We review a number of highly charged ions which have optical transitions suitable for building extremely accurate atomic clocks. This includes ions from Hf$^{12+}$ to U$^{34+}$, which have the $4f^{12}$ configuration of valence electrons, the Ir$^{17+}$ ion, which has a hole in almost filled $4f$ subshell, the Ho$^{14+}$, Cf$^{15+}$, Es$^{17+}$ and Es$^{16+}$ ions. Clock transitions in most of these ions are sensitive to variation of the fine structure constant, $\\alpha$ ($\\alpha = e^2/\\hbar c$). E.g., californium and einsteinium ions have largest known sensitivity to $\\alpha$-variation while holmium ion looks as the most suitable ion for experimental study. We study the spectra of the ions and their features relevant to the use as frequency standards.

  13. The CARIBU EBIS control and synchronization system

    Science.gov (United States)

    Dickerson, Clayton; Peters, Christopher

    2015-01-01

    The Californium Rare Isotope Breeder Upgrade (CARIBU) Electron Beam Ion Source (EBIS) charge breeder has been built and tested. The bases of the CARIBU EBIS electrical system are four voltage platforms on which both DC and pulsed high voltage outputs are controlled. The high voltage output pulses are created with either a combination of a function generator and a high voltage amplifier, or two high voltage DC power supplies and a high voltage solid state switch. Proper synchronization of the pulsed voltages, fundamental to optimizing the charge breeding performance, is achieved with triggering from a digital delay pulse generator. The control system is based on National Instruments realtime controllers and LabVIEW software implementing Functional Global Variables (FGV) to store and access instrument parameters. Fiber optic converters enable network communication and triggering across the platforms.

  14. Neutrons in cancer therapy

    Science.gov (United States)

    Allen, Barry J.

    1995-03-01

    The role of neutrons in the management of cancer has a long history. However, it is only in recent years that neutrons are beginning to find an accepted place as an efficacious radiation modality. Fast neutron therapy is already well established for the treatment of certain cancers, and clinical trials are ongoing. Californium neutron sources are being used in brachytherapy. Boron neutron capture therapy has been well tested with thermal neutrons and epithermal neutron dose escalation studies are about to commence in the USA and Europe. Possibilities of neutron induced auger electron therapy are also discussed. With respect to chemotherapy, prompt neutron capture analysis is being used to study the dose optimization of chemotherapy in the management of breast cancer. The rationales behind these applications of neutrons in the management of cancer are examined.

  15. Study of reproducibility of measurements with the spectrometer of Bonner multispheres

    Energy Technology Data Exchange (ETDEWEB)

    Azevedo, G.A.; Pereira, W.W.; Patrao, K.C.S.; Fonseca, E.S., E-mail: geisadeazevedo@gmail.com, E-mail: walsan@ird.gov.br, E-mail: karla@ird.gov.br, E-mail: evaldo@ird.gov.br [Instituto de Radionprotecao e Dosimetria (IRD/CNEN-RJ), Rio de Janeiro, RJ (Brazil)

    2013-07-01

    This work aims to study the metrological behavior of the Bonner Multisphere Spectrometer (BMS) of the LN / LNMRI / IRD - Laboratorio Metrologia de Neutrons / Laboratorio Nacional de Metrologia e Radiacao Ionizante / Instituto de Radioprotecao e Dosimetria, for measurements in repeatability and reproducibility conditions. Initially, a simulation was done by applying the Monte Carlo method, using the MCNP code and respecting the ISO 8529-1 (2001), using the sources of Californium ({sup 252} Cf), Americium-Beryllium ({sup 241} AmBe) and californium in heavy water (Cf + D{sub 2}O), all located at a distance of 100 cm from the neutron detector ({sup 6}Li (Eu) - crystal scintillator). In this program, the counting of neutrons that are captured by the detector was made. The source is located in the center of a sphere of radius 300 cm. Analyzes the impact of these neutrons in a point of the sphere wall, which in this case acted as a neutron detector and from there, it is estimated the number of neutrons that collide in the whole sphere. The purpose is to obtain the neutron count for different energy bands in a solid field of neutrons, since they have a spectrum ranging from a low to a high energy that can also vary within a particular environment. Wishes to obtain new fields with different sources and moderators materials to be used as new reference fields. Measurements are being conducted for these fields, with the aim of analyzing the variability conditions of the measurement (repeatability and reproducibility) in LEN - Laboratorio de Espectrometria de Neutrons of the LN/LMNRI/IRD. Thus, the spectrometer will be used to improve both the knowledge of the spectrum as the standard of neutrons of the lab, proving that a spectrometry is essential for correct measurement.

  16. Medical Applications and Toxicities of Gallium Compounds

    Directory of Open Access Journals (Sweden)

    Christopher R. Chitambar

    2010-05-01

    Full Text Available Over the past two to three decades, gallium compounds have gained importance in the fields of medicine and electronics. In clinical medicine, radioactive gallium and stable gallium nitrate are used as diagnostic and therapeutic agents in cancer and disorders of calcium and bone metabolism. In addition, gallium compounds have displayed anti-inflammatory and immunosuppressive activity in animal models of human disease while more recent studies have shown that gallium compounds may function as antimicrobial agents against certain pathogens. In a totally different realm, the chemical properties of gallium arsenide have led to its use in the semiconductor industry. Gallium compounds, whether used medically or in the electronics field, have toxicities. Patients receiving gallium nitrate for the treatment of various diseases may benefit from such therapy, but knowledge of the therapeutic index of this drug is necessary to avoid clinical toxicities. Animals exposed to gallium arsenide display toxicities in certain organ systems suggesting that environmental risks may exist for individuals exposed to this compound in the workplace. Although the arsenic moiety of gallium arsenide appears to be mainly responsible for its pulmonary toxicity, gallium may contribute to some of the detrimental effects in other organs. The use of older and newer gallium compounds in clinical medicine may be advanced by a better understanding of their mechanisms of action, drug resistance, pharmacology, and side-effects. This review will discuss the medical applications of gallium and its mechanisms of action, the newer gallium compounds and future directions for development, and the toxicities of gallium compounds in current use.

  17. The origin of the Avram Iancu U-Ni-Co-Bi-As mineralization, Băiţa (Bihor) metallogenic district, Bihor Mts., Romania

    Science.gov (United States)

    Zajzon, Norbert; Szentpéteri, Krisztián; Szakáll, Sándor; Kristály, Ferenc

    2015-10-01

    The Băiţa metallogenic district in the Bihor Mountains is a historically important mining area in Romania. Uranium mining took place between 1952 and 1998 from various deposits, but very little is known about the geology and mineralogy of these deposits. In this paper, we describe geology and mineralogy of uranium mineralization of the Avram Iancu uranium mine from waste dump samples collected before complete remediation of the site. Texturally and mineralogically complex assemblages of nickeline, cobaltite-gersdorffite solid solution, native Bi, Bi-sulfosalts, molybdenite, and pyrite-chalcopyrite-sphalerite occur with uraninite, "pitchblende," and brannerite in most of the ore samples. The association of nickel, cobalt, and arsenic with uranium is reminiscent of five-element association of vein type U-Ni-Co-Bi-As deposits; however, the Avram Iancu ores appear to be more replacement-type stratiform/stratabound. Avram Iancu ore samples contain multistage complex, skarn, uranium sulfide, arsenide assemblages that can be interpreted to have been formed in the retrograde cooling stages of the skarn hydrothermal system. This mineralizing system may have built-up along Upper Cretaceous-Paleogene "Banatite" intrusions of diorite-to-granite composition. The intrusions crosscut the underlying uraniferous Permian formations in the stacked NW-verging Biharia Nappe System. The mineralization forms stacked, multilayer replacement horizons, along carbonate-rich lithologies within the metavolcanic (tuffaceous) Muncel Series. Mineral paragenesis and some mineral chemistry suggest moderate-to-high solid solutions associated with minute but abundant uranium minerals. Within the later arsenide-sulfarsenide mineral assemblage, there is great variation in Ni, Co, and S content with generally increasing arsenic content. Uranium minerals in this late-stage assemblage include very fine euhedral uraninite and brannerite inclusions in arsenide-sulfarsenide minerals. Native bismuth and Bi

  18. Nonlinear THz spectroscopy on n-type GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Gaal, Peter

    2008-06-23

    In this thesis, the ultrafast dynamics of conduction band electrons in semiconductors are investigated by nonlinear terahertz (THz) spectroscopy. In particular, n-doped gallium arsenide samples with doping concentrations in the range of 10{sup 16} cm{sup -3} to 10{sup 17} cm{sup -3} are studied. A novel source for the generation of intense THz radiation is developed which yields single-cycle THz transients with field amplitudes of more then 400 kV/cm. The THz source uses ultrashort optical laser pulses provided by a Ti:sapphire oscillator. In addition, a two-color THz-pump mid-infrared-probe setup is implemented, which allows for two-dimensional time-resolved experiments in the far-infrared wavelength range. Field ionization of neutral shallow donors in gallium arsenide with intense, ultrashort THz pulses and subsequent coherent radiative recombination of electrons to impurity ground states is observed at room temperature. The superradiant decay of the nonlinear polarization results in the emission of a coherent signal with picosecond lifetimes. Such nonlinear signals, which exhibit a lifetime ten times longer than in the linear regime are observed for the first time. At low temperatures and THz field strengths below 5 kV/cm, Rabi flopping on shallow donor transitions is demonstrated. For the first time, the polar electron-LO phonon interaction is directly measured in the quantum kinetic transport regime. Quasi-instantaneous acceleration of conduction band electrons in the polar gallium arsenide lattice by the electric field of intense THz pulses and subsequent probing of the mid-infrared transmission reveals a modulation of the transmission along the THz-mid-infrared delay coordinate with the frequency of the LO phonon. These modulations directly display the relative phase between the electron motion and its surrounding virtual phonon cloud. Quantum kinetic model calculations fully account for the observed phenomena. (orig.)

  19. Microscopic analysis of the valence band and impurity band theories of (Ga,Mn)As

    Czech Academy of Sciences Publication Activity Database

    Mašek, Jan; Máca, František; Kudrnovský, Josef; Makarovský, O.; Eaves, L.; Campion, R. P.; Edmonds, K. W.; Rushforth, A.W.; Foxon, C. T.; Gallagher, B. L.; Novák, Vít; Sinova, Jairo; Jungwirth, Tomáš

    2010-01-01

    Roč. 105, č. 22 (2010), 227202/1-227202/4. ISSN 0031-9007 R&D Projects: GA ČR GA202/07/0456; GA MŠk LC510; GA AV ČR KAN400100652 Grant ostatní: EU FP7(XE) #215368; EU FP7 NAMASTE(XE) No.214499 Institutional research plan: CEZ:AV0Z10100520 Keywords : gallium arsenide * semiconductors Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 7.621, year: 2010

  20. Electric field and space-charge distribution in SI GaAs: effect of high-energy proton irradiation

    CERN Document Server

    Castaldini, A; Polenta, L; Canali, C; Nava, F

    1999-01-01

    The effect of irradiation on semi-insulating gallium arsenide Schottky diodes has been investigated by means of surface potential measurements and spectroscopic techniques. Before and after irradiation the electric field exhibits a Mott barrier-like distribution, and the box-shaped space charge modifies its distribution with irradiation. The increase in density or the generation of some traps changes the compensation ratio producing a deeper active region and a more homogeneous distribution of the electric field. The latter phenomenon is also observed by EBIC images of edge-mounted diodes.

  1. Ab-initio study of the electronic structure of sup 1 sup 9 F implanted in GaAs and GaN crystals

    CERN Document Server

    Park, J H; Cho, H S; Shin, Y N

    1998-01-01

    We have studied the nuclear quadrupole interaction of a fluorine atom implanted in gallium arsenide and gallium nitride cluster models using the ab-initio Hartree-Fock theory. For the three possible fluorine sites in GaAs and GaN, we have determined the location of the implanted fluorine atom by using a self-consistent calculation, the electric field gradient at the implanted atom, and the electronic structure. Good agreement is found with experimental data wherever they are available. Predictions are made for the implanted fluorine site associated with the total energy and the electric field gradient which are expected to be measurable by a variety of experimental techniques.

  2. Studies of the phase transitions in UAs with neutron scattering

    International Nuclear Information System (INIS)

    Uranium arsenide is known to order with the type-I antiferromagnetic (AF) structure at approx. 126 K, and exhibit a first-order transition to the type-IA AF structure at T/sub N//2. We have now reexamined these transitions with a single crystal. Above T/sub N/ UAs exhibits critical scattering suggesting a tendency to order with an incommensurate wavevector, but then suddenly orders with the AF-I structure. The analysis of the data shows the need to consider anisotropic exchange interactions of cubic symmetry between U moments

  3. Tunable Cobalt Vacancies and Related Properties in LaCoxAs2

    OpenAIRE

    Shen, Shijie; Wang, Gang; Jin, Shifeng; Huang, Qingzhen; Ying, Tianping; Dandan LI; Lai, Xiaofang; Zhou, Tingting; Zhang, Han; Lin, Zhiping; Wu, Xiaozhi; Chen, Xiaolong

    2014-01-01

    The origin of transition metal vacancies and their effects on the properties of ThCr2Si2-type compounds have been less studied and poorly understood. Here we carefully investigate the structure, physical properties, and electronic structure for a series of lanthanum cobalt arsenides with nominal composition of LaCoxAs2 (1.6 < = x < = 2.1). It is revealed that the occupancy of Co can be tuned between 1.98(1) and 1.61(1). The structural analyses based on X-ray and neutron diffractions show the ...

  4. Study of the background noise in microwave GaAsFET devices

    International Nuclear Information System (INIS)

    One of the most important properties of the gallium arsenide field effect transistor is its low noise figure in the microwave frequency range (approx. 1 dB, 4 GHz). The applications of this device in components and systems in the high frequency range require analysis of background noise in terms of basic static and dynamic properties of the device. The purpose of this paper is to review GaAsFET noise properties; from this review, a description of precise noise measurement techniques is made. Some experimental and theoretical results on the minimum noise figure are shown for several GaAsFET devices. (author)

  5. STUDY ON OCCURENCE FORM OF PLATINUM IN XINJIE Cu—Pt DEPOSIT BY NAA AND SCANNING PROTON MICROPROBE

    Institute of Scientific and Technical Information of China (English)

    李晓林; 童纯菡; 等

    1995-01-01

    A combination of NAA and micro-PIXE was used to study concentrations and distributions of platinum group elements (PGE) in ores from Xinjie Cu-Pt deposit.The NAA results of the bulk indicate that the ores belong to the enriched Pt-Pd type.The element concentration maps of scanning micro-PIXE for the ores show that the occurence form of Pt is independent arsenide minerals.No PGE were detected in chalcopyrite of Xinjie Cu-Pt deposit.These information are economically beneficial to the mineral smelting process.

  6. Cell Libraries

    Science.gov (United States)

    1994-01-01

    A NASA contract led to the development of faster and more energy efficient semiconductor materials for digital integrated circuits. Gallium arsenide (GaAs) conducts electrons 4-6 times faster than silicon and uses less power at frequencies above 100-150 megahertz. However, the material is expensive, brittle, fragile and has lacked computer automated engineering tools to solve this problem. Systems & Processes Engineering Corporation (SPEC) developed a series of GaAs cell libraries for cell layout, design rule checking, logic synthesis, placement and routing, simulation and chip assembly. The system is marketed by Compare Design Automation.

  7. Surface Patterning and Nanowire Biosensor Construction

    DEFF Research Database (Denmark)

    Iversen, Lars

    2008-01-01

    submicron feature sizes, varying linearly in size with laser power and irradiation time. In Part II - “Nanoscale Biosensors” - Indium Arsenide (InAs) nanowires (NW) incorporated in field effect transistor (FET) devices provide a sensitive platform for detection of charged analyte species binding to the NW...... surface. A central limitation to this biosensor principle is the screening of analyte charge by mobile ions in electrolytes with physiological ionic strength. To overcome this problem, we propose to use as capture agents proteins which undergo large conformational changes. Using structure based protein...

  8. Radiation tests of semiconductor detectors

    OpenAIRE

    Chmill, Valery

    2006-01-01

    This thesis investigates the response of Gallium Arsenide (GaAs) detectors to ionizing irradiation. Detectors based on π-υ junction formed by deep level centers doping. The detectors have been irradiated with 137Cs γ-rays up to 110 kGy, with 6 MeV mean energy neutron up to approximately 6 · 1014 n/cm2, with protons and mixed beam up to 1015 p/cm2. Results are presented for the effects on leakage currents and charge collection efficiencies for minimum ionizing electrons and alpha particles. Th...

  9. Heterogeneously integrated optical detection platform for on-chip sensing applications

    Science.gov (United States)

    Chaudhuri, Ritesh Ray; Song, Youngsik; Seo, Sang-Woo

    2015-10-01

    This paper introduces a resonant waveguide grating (RWG) integrated with a photodetector for on-chip sensing applications. An inverted thin film indium gallium arsenide (InGaAs) metal-semiconductor-metal photodetector is heterogeneously integrated on silicon dioxide (SiO2)/ silicon substrate using fluidic self-assembly. The inverted optical waveguide and the RWG structure are subsequently fabricated utilizing layer-by-layer post-processing techniques. Detailed electrical, optical, and optoelectronic characterization were performed to analyze the functionality of the sensing platform. This approach can open new avenues allowing the development of low-cost complementary metal-oxide semiconductor compatible integrated optical sensors.

  10. Low-level laser therapy affects osseointegration in titanium implants: resonance frequency, removal torque, and histomorphometric analysis in rabbits

    OpenAIRE

    Kim, Jong-Ryoul; Kim, Sung-Hee; Kim, In-Ryoung; Park, Bong-Soo; Kim, Yong-Deok

    2016-01-01

    Objectives The purpose of this study was to investigate the effects of low-level laser therapy (LLLT) with a diode gallium-aluminum-arsenide (Ga-Al-As) low-level laser device on the healing and attachment of titanium implants in bone. Materials and Methods Thirteen New Zealand white male rabbits weighing 3.0±0.5 kg were used for this study. Dental titanium implants (3.75 mm in diameter and 8.5 mm in length, US II RBM plus fixture; Osstem, Seoul, Korea) were implanted into both femurs of each ...

  11. Semiconductor Nanomembranes for Quantum Photonics: Quantum Light Sources and Optomechanics

    DEFF Research Database (Denmark)

    Liu, Jin

    optomechanical nanomembranes for cavity cooling experiments. For PC cavities, several important processes have been extensively optimized such as the inductively coupled plasma (ICP) dry etch, the release of the membranes and the post-cleaning of the samples. GaAs optomechanical nanomembranes with a world......This thesis describes the fabrication and characterizations of semiconductor nanomembranes, i.e., gallium arsenide (GaAs) photonic crystal (PC) and optomechanical nanomemebranes. Processing techniques are developed and optimized in order to fabricate PC membranes for quantum light sources and...

  12. Site control technique for quantum dots using electron beam induced deposition

    Science.gov (United States)

    Iizuka, Kanji; Jung, JaeHun; Yokota, Hiroshi

    2014-05-01

    To develop simple and high throughput sit definition technique for quantum dots (QDs), the electron beam induced deposition (EBID) method was used as desorption guide of phosphorus atoms form InP substrate. As the results one or a few indium (In) droplets (DLs) were created in the carbon grid pattern by thermal annealing at a temperature of 450°C for 10 min in the ultra high vacuum condition. The size of In DLs was larger than QDs, but arsenide DLs by molecular beam in growth chamber emitted wavelength of 1.028μm at 50K by photoluminescence measurement.

  13. Photovoltaics and solar thermal conversion to electricity - Status and prospects

    Science.gov (United States)

    Alper, M. E.

    1979-01-01

    Photovoltaic power system technology development includes flat-plate silicon solar arrays and concentrating solar cell systems, which use silicon and other cell materials such as gallium arsenide. System designs and applications include small remote power systems ranging in size from tens of watts to tens of kilowatts, intermediate load-center applications ranging in size from tens to hundreds of kilowatts, and large central plant installations, as well as grid-connected rooftop applications. The thermal conversion program is concerned with large central power systems and small power applications.

  14. Modeling distributed feedback GaAs-based lasers in dentistry

    Science.gov (United States)

    Shih, Meng-Mu

    2012-01-01

    Distributed-feedback gallium-arsenide-based lasers with metal-gratings can generate stable wavelength at 980nm for applications in dentistry. This model uses the periodic optical waveguide method to calculate the coupling coefficient, which is a key parameter of laser performance. This model shows how the optical, geometrical, and material parameters depending on each other and how they affect the coupling coefficients in the laser waveguides. Numerical results compare the coupling coefficients of 980 nm lasers with those of 810 nm lasers. The modeling processes, including results, discussions, and physical interpretations, help to design and analyze lasers for more clinical and research applications in dentistry.

  15. Studies of III-V ferromagnetic semiconductors

    OpenAIRE

    Wang, Mu

    2012-01-01

    The III-V ferromagnetic semiconductor Gallium Manganese Arsenide ((Ga,Mn)As) is one of the most interesting and well studied materials in spintronics research area. The first chapter is a brief introduction to spintronics, the properties of (Ga,Mn)As and the growth technique molecular beam epitaxy (MBE). Then the thesis presents a detailed study of the effect on the Curie temperature (TC) of varying the growth conditions and post-growth annealing procedures for epitaxially grown (Ga,Mn)As ...

  16. On-chip terahertz Goubau-line waveguides with integrated photoconductive emitters and mode-discriminating detectors

    Science.gov (United States)

    Dazhang, L.; Cunningham, J.; Byrne, M. B.; Khanna, S.; Wood, C. D.; Burnett, A. D.; Ershad, S. M.; Linfield, E. H.; Davies, A. G.

    2009-08-01

    We have measured the picosecond time-domain response of Goubau-line waveguides, formed on quartz substrates, by integrating regions of low-temperature-grown gallium arsenide into the waveguides to act both as pulsed current emitters and detectors. Using one pair of photoconductive switches for excitation and a second pair for detection, pulsed signal propagation of a low dispersion electric field mode was demonstrated in the Goubau-lines, with the signal bandwidth extending beyond 800 GHz. Furthermore, it was demonstrated that terahertz bandstop filters can be integrated into a Goubau-line for removal of specific frequencies from the transmitted pulses.

  17. Growth and characterization of Cd3-xZnxAs2 undoped and Se-doped films

    International Nuclear Information System (INIS)

    For preparation of Cd3-xZnxAs2 films vapour condensation in vacuum as the one that is broadly applied to obtain films and epitaxial layer of semiconductors was chosen. The films have been grown and subsequently subjected to the evaporation of copper contact by means of vacuum evaporation system. The initial material was made of single crystals grown by the Bridgman method. Preliminary calculations of the evaporation flux density and the condensation of Cd3-xZnxAs2 alloys were made by the known equations for the pressures of zinc and cadmium arsenides saturated steam and sufficiently agree with experimentally obtained data.

  18. The state of the art of thin-film photovoltaics

    International Nuclear Information System (INIS)

    Thin-film photovoltaic technologies, based on materials such as amorphous or polycrystalline silicon, copper indium diselenide, cadmium telluride, and gallium arsenide, offer the potential for significantly reducing the cost of electricity generated by photovoltaics. The significant progress in the technologies, from the laboratory to the marketplace, is reviewed. The common concerns and questions raised about thin films are addressed. Based on the progress to date and the potential of these technologies, along with continuing investments by the private sector to commercialize the technologies, one can conclude that thin-film PV will provide a competitive alternative for large-scale power generation in the future

  19. Errors in short circuit measurements due to spectral mismatch between sunlight and solar simulators

    Science.gov (United States)

    Curtis, H. B.

    1976-01-01

    Errors in short circuit current measurement were calculated for a variety of spectral mismatch conditions. The differences in spectral irradiance between terrestrial sunlight and three types of solar simulator were studied, as well as the differences in spectral response between three types of reference solar cells and various test cells. The simulators considered were a short arc xenon lamp AMO sunlight simulator, an ordinary quartz halogen lamp, and an ELH-type quartz halogen lamp. Three types of solar cells studied were a silicon cell, a cadmium sulfide cell and a gallium arsenide cell.

  20. Manifestation of the long-range action effect in ion-irradiated transistor structures based on GaAs

    International Nuclear Information System (INIS)

    The effect of ion irradiation on the parameters of the field transistors active layers with the Schottky barrier produced on the basis of the epitaxial gallium arsenide is studied. The transistors were irradiated by the argon ions with the energy of 90 eV with different doses and current densities. The change in the electron concentration and mobility is determined when current densities of argon ions are above 0.5 μA/cm2 and doses are above 5 x 1015 cm-2 . Besides, the more sharper profile of the electron concentration distribution is formed in the depth of the active layer near the interface boundary with the buffer

  1. Features of manifestation of the long-range action in As-Ga transistor structures under combined action by different mass ions

    International Nuclear Information System (INIS)

    Anomalous differences in measurements of distribution profiles of charge carriers concentration over the depth of active regions of arsenide-gallium structures after irradiation on the side of substrate by molecular hydrogen and argon ions, separately and in a combined sequence, were detected. The greatest effect of irradiation was observed in the structures with increase content of defects in the buffer layer. The results are explained by restructuring of impurity-defective complexes near interfaces induced by elastic waves appearing due to relaxation of displacement peaks in the area of ion braking

  2. Single and multiband THz Metamaterial Polarizers

    CERN Document Server

    Sangala, Bagvanth Reddy; Deshmukh, Prathmesh; Surdi, Harshad; Rana, Goutam; Gopal, Achanta Venu; Prabhu, S S

    2015-01-01

    We report single and multiband linear polarizers for terahertz (THz) frequencies using cut-wire metamaterials (MM). The MMs are designed by finite element method, fabricated by electron beam lithography, and characterized by THz time-domain spectroscopy. The MM unit cells consist of single or multiple length cut-wire pads of gold on semi-insulating Gallium Arsenide for single or multiple band polarizers. The dependence of the resonance frequency of the single band polarizer on the length of the cut-wires is explained based a transmission line model.

  3. An interim report on the NTS-2 solar cell experiment

    Science.gov (United States)

    Statler, R. L.; Walker, D. H.

    1979-01-01

    Data obtained from the fourteen solar cell modules on the NTS-2 satellite are presented together with a record of panel temperature and sun inclination. The following flight data are discussed: (1) state of the art solar cell configurations which embody improvements in solar cell efficiency through new silicon surface and bulk technology, (2) improved coverslip materials and coverslip bonding techniques, (3) short and long term effects of ultraviolet rejection filters vs. no filters on the cells, (4) degradation on a developmental type of liquid epitaxy gallium-aluminum-arsenide solar cell, and (5) space radiation effects.

  4. Infrared spectra of some sulfides and their analogs of binary composition in the long-wave region

    Science.gov (United States)

    Povarennykh, A. S.; Sidorenko, G. A.; Solntseva, L. S.; Solntsev, B. P.

    1981-01-01

    The far infrared spectra (500-60/cm) of some simple sulfides and their analogs were studied. In all, 22 minerals with different structure types were investigated, out of which 14 are sulfides (galena, alabandite, pyrrhotite, sphalerite, wurtzite, cinnabar, realgar, orpiment, getchelite antimonite, molybdenite, pyrite, marcasite and heazlewoodite) 6 arsenides (niccolite, domeykite, arsenopyrite, lollingite, rammelsbergite and skutterudite), one telluride (tetradymite) and native arsenic. The main bands of infrared absorption spectra of the minerals are compared with the relative strength of the interatomic bonds and their interpretation is given.

  5. Microwave monolithic integrated circuit development for future spaceborne phased array antennas

    Science.gov (United States)

    Anzic, G.; Kascak, T. J.; Downey, A. N.; Liu, D. C.; Connolly, D. J.

    1984-01-01

    The development of fully monolithic gallium arsenide (GaAs) receive and transmit modules suitable for phased array antenna applications in the 30/20 gigahertz bands is presented. Specifications and various design approaches to achieve the design goals are described. Initial design and performance of submodules and associated active and passive components are presented. A tradeoff study summary is presented, highlighting the advantages of a distributed amplifier approach compared to the conventional single power source designs. Previously announced in STAR as N84-13399

  6. Displacement energy for various ions in particle detector materials

    CERN Document Server

    Chilingarov, A G; Meyer, J S; Sloan, T

    2000-01-01

    The total displacement energy or total non-ionising energy loss has been calculated for a variety of ions during their slowing down to rest in the detector materials carbon, silicon and gallium arsenide. The calculations, based on the theory of Lindhard et al., have been performed using a Monte Carlo method and a simple parameterisation of the results is presented. Such a parameterisation will simplify considerably the future computation of the differential non-ionising energy loss by fast particles in particle detectors.

  7. Photoelectrochemical decomposition of water utilizing monolithic tandem cells

    Energy Technology Data Exchange (ETDEWEB)

    Kocha, Shyam S.; Montgomery, Don; Peterson, Mark W.; Turner, John A. [National Renewable Energy Laboratory, Golden, CO (United States)

    1998-04-30

    Photovoltaic tandem cells consisting of a gallium indium phosphide (GaInP{sub 2}) homojunction grown epitaxially upon a gallium arsenide (GaAs) homojunction, with a GaAs tunnel-diode interconnection were utilized to photoelectrochemically decompose water in a 1 M sulfuric acid electrolyte solution. Using a sol-gel process, a platinum colloid in water was used to modify the illuminated front surface of the device to catalyze the water decomposition process. A unique feature of this device is that the hydrogen and oxygen are co-evolved from the illuminated surface. The exact mechanism of the water decomposition process is not fully understood at this time

  8. Study of the background noise in microwave GaAsFET devices

    Energy Technology Data Exchange (ETDEWEB)

    Serrano S, A. (Centro de Investigacion Cientifica y de Educacion Superior de Ensenada, B.C. (Mexico))

    1984-01-01

    One of the most important properties of the gallium arsenide field effect transistor is its low noise figure in the microwave frequency range (approx. 1 dB, 4 GHz). The applications of this device in components and systems in the high frequency range require analysis of background noise in terms of basic static and dynamic properties of the device. The purpose of this paper is to review GaAsFET noise properties; from this review, a description of precise noise measurement techniques is made. Some experimental and theoretical results on the minimum noise figure are shown for several GaAsFET devices.

  9. Ordered arrangements of selective-area grown MnAs nanoclusters as components for novel, planar magneto-electronic devices

    OpenAIRE

    Fischer, Martin

    2015-01-01

    Novel concepts such as racetrack memory devices or planar logic elements based on ferromagnetic materials are subject of today’s research. However, there are certain limits which will have to be faced by the established technology. A very attractive model kit for planar magneto-electronic devices can be found in Manganese arsenide (MnAs ) nanoclusters grown by selective-area metal-organic vapor-phase epitaxy (SA-MOVPE). MnAs exposes ferromagnetism at room temperature and below, and the growt...

  10. Use of a semiconductor diode laser in urology

    Science.gov (United States)

    Watson, Graham M.; Anson, K.

    1993-05-01

    The gallium arsenide semiconductor laser at 805 nm has been used with a variety of delivery fibers to produce actions varying from incision to interstitial coagulation. Clinical experience at this early stage suggests that the laser can be used to cut skin and connective tissue efficiently in air. It may prove at least as effective as the neodymium YAG laser for interstitial coagulation of tumors or prostate. Further efforts are required to promote its action cutting underwater and as a coagulator both in air and water.

  11. New developments in the applications of proton beam writing

    Energy Technology Data Exchange (ETDEWEB)

    Mistry, P. [Ion Beam Centre, Advanced Technology Institute, School of Electronics and Physical Sciences, University of Surrey, Guildford GU2 7XH (United Kingdom)]. E-mail: p.mistry@surrey.ac.uk; Gomez-Morilla, I. [Department of Physics, School of Electronics and Physical Sciences, University of Surrey, Guildford GU2 7XH (United Kingdom); Grime, G.W. [Department of Physics, School of Electronics and Physical Sciences, University of Surrey, Guildford GU2 7XH (United Kingdom); Webb, R.P. [Ion Beam Centre, Advanced Technology Institute, School of Electronics and Physical Sciences, University of Surrey, Guildford GU2 7XH (United Kingdom); Gwilliam, R. [Ion Beam Centre, Advanced Technology Institute, School of Electronics and Physical Sciences, University of Surrey, Guildford GU2 7XH (United Kingdom); Cansell, A. [Ion Beam Centre, Advanced Technology Institute, School of Electronics and Physical Sciences, University of Surrey, Guildford GU2 7XH (United Kingdom); Merchant, M. [Department of Physics, School of Electronics and Physical Sciences, University of Surrey, Guildford GU2 7XH (United Kingdom); Kirkby, K.J. [Ion Beam Centre, Advanced Technology Institute, School of Electronics and Physical Sciences, University of Surrey, Guildford GU2 7XH (United Kingdom); Teo, E.J. [Centre for Ion Beam Applications, 2 Science Drive 3, Department of Physics, National University of Singapore, Singapore 117542 (Singapore); Breese, M.B.H. [Centre for Ion Beam Applications, 2 Science Drive 3, Department of Physics, National University of Singapore, Singapore 117542 (Singapore); Bettiol, A.A. [Centre for Ion Beam Applications, 2 Science Drive 3, Department of Physics, National University of Singapore, Singapore 117542 (Singapore); Blackwood, D.J. [Dept. of Materials Science, National Univ. of Singapore, Singapore 117542 (Singapore); Watt, F. [Centre for Ion Beam Applications, 2 Science Drive 3, Dept. of Physics, National Univ. of Singapore, Singapore 117542 (Singapore)

    2005-08-01

    This report describes how proton beam writing can be used to produce direct write, high resolution three dimensional structures on the nano and micron scales in semiconductor materials such as p-type (1 0 0) bulk silicon and gallium arsenide. The lattice damage caused by the proton irradiation increases the electrical resistance of the semiconductors resulting in a raised structure of the scanned area after an electrochemical etch. Advances in this field over the past few years and its relevance to future technology mean that it is now a powerful contender for direct write technology for future nodes 45 nm and below.

  12. New developments on the Surrey microbeam applications to lithography

    Energy Technology Data Exchange (ETDEWEB)

    Mistry, P. [ATI, Ion Beam Centre, University of Surrey, Guildford, GU2 7XH (United Kingdom)]. E-mail: p.mistry@surrey.ac.uk; Gomez-Morilla, I. [Department of Physics, University of Surrey, Guildford, GU2 7XH (United Kingdom); Grime, G.W. [Department of Physics, University of Surrey, Guildford, GU2 7XH (United Kingdom); Webb, R. [ATI, Ion Beam Centre, University of Surrey, Guildford, GU2 7XH (United Kingdom); Jeynes, C. [ATI, Ion Beam Centre, University of Surrey, Guildford, GU2 7XH (United Kingdom); Gwilliam, R. [ATI, Ion Beam Centre, University of Surrey, Guildford, GU2 7XH (United Kingdom); Cansell, A. [ATI, Ion Beam Centre, University of Surrey, Guildford, GU2 7XH (United Kingdom); Merchant, M. [Department of Physics, University of Surrey, Guildford, GU2 7XH (United Kingdom); Kirkby, K.J. [ATI, Ion Beam Centre, University of Surrey, Guildford, GU2 7XH (United Kingdom)

    2005-04-01

    Investigations using MeV protons for lithography applications are being performed at the Ion Beam Centre of the University of Surrey, UK. High aspect ratio three dimensional structures have been produced by protons in gallium arsenide (GaAs) and Poly(methyl methacrylate) (PMMA). Structures produced in PMMA require significantly lower fluences than GaAs and behave positively to etching, whereas GaAs shows a negative behaviour. Variable fluence studies on GaAs show a transition from low to high aspect ratio three dimensional structures as the fluence increases.

  13. New developments in the applications of proton beam writing

    International Nuclear Information System (INIS)

    This report describes how proton beam writing can be used to produce direct write, high resolution three dimensional structures on the nano and micron scales in semiconductor materials such as p-type (1 0 0) bulk silicon and gallium arsenide. The lattice damage caused by the proton irradiation increases the electrical resistance of the semiconductors resulting in a raised structure of the scanned area after an electrochemical etch. Advances in this field over the past few years and its relevance to future technology mean that it is now a powerful contender for direct write technology for future nodes 45 nm and below

  14. New developments on the Surrey microbeam applications to lithography

    International Nuclear Information System (INIS)

    Investigations using MeV protons for lithography applications are being performed at the Ion Beam Centre of the University of Surrey, UK. High aspect ratio three dimensional structures have been produced by protons in gallium arsenide (GaAs) and Poly(methyl methacrylate) (PMMA). Structures produced in PMMA require significantly lower fluences than GaAs and behave positively to etching, whereas GaAs shows a negative behaviour. Variable fluence studies on GaAs show a transition from low to high aspect ratio three dimensional structures as the fluence increases

  15. Plating on difficult-to-plate metals: what's new

    International Nuclear Information System (INIS)

    Some of the changes since 1970 in procedures for plating on such materials as titanium, molybdenum, silicon, aluminum, and gallium arsenide are summarized. While basic procedures for plating some of these materials were developed as many as 30 to 40 years ago, changes in the end uses of the plated products have necessitated new plating processes. In some cases, vacuum techniques - such as ion bombardment, ion implantation, and vacuum metallization - have been introduced to improve the adhesion of electrodeposits. In other cases, these techniques have been used to deposit materials upon which electrodeposits are required

  16. Magnetic properties changes of MnAs thin films irradiated with highly charged ions

    OpenAIRE

    Trassinelli, Martino; Gafton, V.; Eddrief, Mahmoud; Eddrief, M.; Etgens, Victor H.; Etgens, V. H.; Hidki, S.; Lacaze, Emmanuelle; Lamour, Emily; Luo, X.; Marangolo, M.; Marangolo, Massimiliano; Merot, Jacques; Prigent, Christophe; Reuschl, Regina

    2013-01-01

    We present the first investigation on the effect of highly charged ion bombardment on a manganese arsenide thin film. The MnAs films, 150~nm thick, are irradiated with 90 keV Ne$^{9+}$ ions with a dose varying from $1.6\\times10^{12}$ to $1.6\\times10^{15}$~ions/cm$^2$. The structural and magnetic properties of the film after irradiation are investigated using different techniques, namely, X-ray diffraction, magneto-optic Kerr effect and magnetic force microscope. Preliminary results are presen...

  17. X-ray detection with GaAs RGCCDs

    CERN Document Server

    Passmore, S; Rogalla, M; Runge, K; Bryman, D; Cresswell, J

    1999-01-01

    Gallium-Arsenide Resistive-Gate CCDs with an active depth of up to 30 mu m were used to detect X-rays with energies between 14 and 60 keV. Five different X-ray sources were used to investigate the signal-to-noise ratio, energy resolution and linearity of the device. An energy resolution better than 11% at 60 keV was observed. The charge transport efficiency (CTE) of these 128 pixel CCDs was determined using two independent methods to be CTE>0.9992. (author)

  18. X-ray detection with GaAs RGCCDs

    Energy Technology Data Exchange (ETDEWEB)

    Passmore, S. E-mail: s.passmore@physics.gla.ac.uk; Ludwig, J.; Rogalla, M.; Runge, K.; Bryman, D.; Cresswell, J

    1999-09-11

    Gallium-Arsenide Resistive-Gate CCDs with an active depth of up to 30 {mu}m were used to detect X-rays with energies between 14 and 60 keV. Five different X-ray sources were used to investigate the signal-to-noise ratio, energy resolution and linearity of the device. An energy resolution better than 11% at 60 keV was observed. The charge transport efficiency (CTE) of these 128 pixel CCDs was determined using two independent methods to be CTE>0.9992. (author)

  19. Characterization of GaAlAs-GaAs solar cell in the system with fresnel lens

    International Nuclear Information System (INIS)

    The operation of gallium arsenide concentrator solar cell in the system with Fresnel lens is investigated. It is determined that efficiency of concentrating system strongly depends on the presence of an atmospheric steams. The obtained results show that the focusing ability of optical system decreases with the increases of dispersed component of solar radiation. This lowers short-circuit current and output power of the photo converter. The measured angular dependence of I/sub sc/ and U/sub oc/ of the concentrator module was utilized to optimize the operation of the Sun tracking system. (author)

  20. Development of a Fresnel lens concentrator for space application

    Science.gov (United States)

    Oneill, Mark J.; Piszczor, Michael F.

    1987-01-01

    The selected conceptual design of the dome lens photovoltaic concentrator for space applications uses a 3.7 cm square aperture dome lens to focus onto a 0.4 cm active diameter gallium arsenide cell. The selected configuration will provide 91.5 percent lens optical efficiency and 21.4 percent cell efficiency at 100 suns irradiance and 100 C cell temperature, for an overall cell efficiency of 19.6 percent. The selected configuration will tolerate 1 degree tracking errors with negligible loss of performance. The selected panel weight is 2.5 kg/sq.m.

  1. The mini-dome lens space concentrator array - Recent component test results and current array development status

    Science.gov (United States)

    O'Neill, M. J.; Mcdanal, A. J.; Perry, J. L.; Flood, D. J.; Piszczor, M. F.; Swartz, C. K.

    1989-01-01

    The development of a high-performance, lightweight space photovoltaic concentrator array is described. The array is the first space photovoltaic concentrator system to use a refractive optical concentrator in the form of a dome-shaped, point-focus, Fresnel lens. In addition, it is the first such concentrator system to utilize prismatic cell covers to eliminate gridline obscuration losses. By combining these array features with state-of-the-art gallium arsenide cell technology, array areal power values (in watts per square meter) well in excess of present space power system levels are anticipated. In addition, the array has the potential for extremely high specific power values (in watts per kilogram).

  2. Molecular beam epitaxy

    CERN Document Server

    Pamplin, Brian R

    1980-01-01

    Molecular Beam Epitaxy introduces the reader to the use of molecular beam epitaxy (MBE) in the generation of III-V and IV-VI compounds and alloys and describes the semiconductor and integrated optics reasons for using the technique. Topics covered include semiconductor superlattices by MBE; design considerations for MBE systems; periodic doping structure in gallium arsenide (GaAs); nonstoichiometry and carrier concentration control in MBE of compound semiconductors; and MBE techniques for IV-VI optoelectronic devices. The use of MBE to fabricate integrated optical devices and to study semicond

  3. Role of substrate quality on IC performance and yields

    Science.gov (United States)

    Thomas, R. N.

    1981-01-01

    The development of silicon and gallium arsenide crystal growth for the production of large diameter substrates are discussed. Large area substrates of significantly improved compositional purity, dopant distribution and structural perfection on a microscopic as well as macroscopic scale are important requirements. The exploratory use of magnetic fields to suppress convection effects in Czochralski crystal growth is addressed. The growth of large crystals in space appears impractical at present however the efforts to improve substrate quality could benefit from the experiences gained in smaller scale growth experiments conducted in the zero gravity environment of space.

  4. Synthese und Eigenschaften von Trimethylsilylarsanen (Trimethylsilylverbindungen der Vb-Elemente ; 1)

    OpenAIRE

    Becker, Gerd; Gutekunst, Gerhard; Wessely, Hans Jürgen

    1980-01-01

    Aus Natrium-Kalium-Legierung und pulverisiertem Arsen in Dimethoxyäthan dargestelltes „Na3As/K3As” setzt sich mit Trimethylchlorsilan in 80 bis 90%iger Ausbeute zu Tris(trimethylsilyl)arsan 4 um. 4 reagiert mit Methyllithium in THF oder Dimethoxyäthan zu Lithiumbis(trimethylsilyl)arsenid 5, das mit zwei Molekülen THF – 5a – oder einem Molekül Dimethoxyäthan – 5b – pro Formeleinheit kristallisiert. Das Dimethoxyäthan-Addukt ist dimer in Benzol. Die Umsetzung von 5 mit primären und sekundären A...

  5. Raman spectroscopy and electrical properties of InAs nanowires with local oxidation enabled by substrate micro-trenches and laser irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Tanta, R.; Krogstrup, P.; Nygård, J.; Jespersen, T. S., E-mail: tsand@fys.ku.dk [Center for Quantum Devices and Nano Science Center, Niels Bohr Institute, University of Copenhagen, Copenhagen 2100 (Denmark); Madsen, M. H. [Danish Fundamental Metrology, Matematiktorvet 307, Kgs. Lyngby 2800 (Denmark); Liao, Z.; Vosch, T. [Nano-Science Center, Department of Chemistry, University of Copenhagen, Copenhagen 2100 (Denmark)

    2015-12-14

    The thermal gradients along indium arsenide nanowires were engineered by a combination of fabricated micro-trenches in the supporting substrate and focused laser irradiation. This allowed local spatial control of thermally activated oxidation reactions of the nanowire on the scale of the diffraction limit. The locality of the oxidation was detected by micro-Raman mapping, and the results were found to be consistent with numerical simulations of the temperature profile. Applying the technique to nanowires in electrical devices the locally oxidized nanowires remained conducting with a lower conductance as expected for an effectively thinner conducting core.

  6. Raman spectroscopy and electrical properties of InAs nanowires with local oxidation enabled by substrate micro-trenches and laser irradiation

    CERN Document Server

    Tanta, R; Liao, Z; Krogstrup, P; Vosch, T; Nygard, J; Jespersen, T S

    2016-01-01

    The thermal gradient along indium-arsenide nanowires was engineered by a combination of fabricated micro- trenches in the supporting substrate and focused laser irradiation. This allowed local control of thermally activated oxidation reactions of the nanowire on the scale of the diffraction limit. The locality of the oxidation was detected by micro-Raman mapping, and the results were found consistent with numerical simulations of the temperature profile. Applying the technique to nanowires in electrical devices the locally oxidized nanowires remained conducting with a lower conductance as expected for an effectively thinner conducting core.

  7. Cameras Reveal Elements in the Short Wave Infrared

    Science.gov (United States)

    2010-01-01

    Goodrich ISR Systems Inc. (formerly Sensors Unlimited Inc.), based out of Princeton, New Jersey, received Small Business Innovation Research (SBIR) contracts from the Jet Propulsion Laboratory, Marshall Space Flight Center, Kennedy Space Center, Goddard Space Flight Center, Ames Research Center, Stennis Space Center, and Langley Research Center to assist in advancing and refining indium gallium arsenide imaging technology. Used on the Lunar Crater Observation and Sensing Satellite (LCROSS) mission in 2009 for imaging the short wave infrared wavelengths, the technology has dozens of applications in military, security and surveillance, machine vision, medical, spectroscopy, semiconductor inspection, instrumentation, thermography, and telecommunications.

  8. Raman spectroscopy of boron carbides and related boron-containing materials

    International Nuclear Information System (INIS)

    Raman spectra of crystalline boron, boron carbide, boron arsenide (B12As2), and boron phosphide (B12P2) are reported. The spectra are compared with other boron-containing materials containing the boron icosahedron as a structural unit. The spectra exhibit similar features some of which correlate with the structure of the icosahedral units of the crystals. The highest Raman lines appear to be especially sensitive to the B-B distance in the polar triangle of the icosahedron. Such Raman structural markers are potentially useful in efforts to tailor electronic properties of these high temperature semiconductors and thermoelectrics

  9. Comparative High Field Magneto-transport Of Rare Earth Oxypnictides With Maximum Transition Temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Balakirev, Fedor F [Los Alamos National Laboratory; Migliori, A [MPA-NHMFL; Riggs, S [NHMFL-FSU; Hunte, F [NHMFL-FSU; Gurevich, A [NHMFL-FSU; Larbalestier, D [NHMFL-FSU; Boebinger, G [NHMFL-FSU; Jaroszynski, J [NHMFL-FSU; Ren, Z [CHINA; Lu, W [CHINA; Yang, J [CHINA; Shen, X [CHINA; Dong, X [CHINA; Zhao, Z [CHINA; Jin, R [ORNL; Sefat, A [ORNL; Mcguire, M [ORNL; Sales, B [ORNL; Christen, D [ORNL; Mandrus, D [ORNL

    2008-01-01

    We compare magnetotransport of the three iron-arsenide-based compounds ReFeAsO (Re=La, Sm, Nd) in very high DC and pulsed magnetic fields up to 45 and 54 T, respectively. Each sample studied exhibits a superconducting transition temperature near the maximum reported to date for that particular compound. While high magnetic fields do not suppress the superconducting state appreciably, the resistivity, Hall coefficient, and critical magnetic fields, taken together, suggest that the phenomenology and superconducting parameters of the oxypnictide superconductors bridges the gap between MgB{sub 2} and YBCO.

  10. Influence of Cr doping on the magnetic structure of the FeAs-strips compound CaFe4As3: A single-crystal neutron diffraction study

    Science.gov (United States)

    Manuel, P.; Chapon, L. C.; Trimarchi, G.; Todorov, I. S.; Chung, D. Y.; Ouladdiaf, B.; Gutmann, M. J.; Freeman, A. J.; Kanatzidis, M. G.

    2013-09-01

    We have studied the magnetic structure of a Cr-doped iron-arsenide compound CaFe4As3 by means of single crystal neutron diffraction. The neutron data reveal that below 90 K, an antiferromagnetic structure with propagation vector k=0 is adopted. Refinement of the magnetic structure using one of the modes allowed by symmetry analysis indicates that two of the four Fe sites, including the one where the selective substitution Fe/Cr happens, bear reduced magnetic moments. Density functional theory calculations confirm the stability of such a magnetic arrangement.

  11. Fabrication and characterization of high aspect ratio perpendicular patterned information storage media in an Al2O3/GaAs substrate

    OpenAIRE

    Wong, Joyce; Scherer, Axel; Todorovic, Mladen; Schultz, Sheldon

    1999-01-01

    In a new approach, we have fabricated 6:1 aspect ratio magnetic nanocolumns, 60–250 nm in diameter, embedded in a hard aluminum-oxide/gallium-arsenide (Al2O3/GaAs) substrate. The fabrication technique uses the highly selective etching properties of GaAs and AlAs, and highly efficient masking properties of Al2O3 to create small diameter, high aspect ratio holes. Nickel (Ni) is subsequently electroplated into the holes, followed by polishing, which creates a smooth and hard surface appropriate ...

  12. Laser-Ablated Ba(0.50)Sr(0.50)TiO3/LaAlO3 Films Analyzed Statistically for Microwave Applications

    Science.gov (United States)

    Romanofsky, Robert R.

    2003-01-01

    Scanning phased-array antennas represent a highly desirable solution for futuristic near-Earth and deep space communication scenarios requiring vibration-free, rapid beam steering and enhanced reliability. The current state-of-practice in scanning phased arrays is represented by gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) technology or ferrite phase shifters. Cost and weight are significant impediments to space applications. Moreover, conventional manifold-fed arrays suffer from beam-forming loss that places considerable burden on MMIC amplifiers. The inefficiency can result in severe thermal management problems.

  13. Effect of laser radiation on thymus hormones production

    International Nuclear Information System (INIS)

    Irradiation of the epithelial cells from human (cell line HTSC) by arsenid-gallium laser (0.89 nm, 1500 Hz) induces an enhancement of thymic hormone production. The concentration of α-1-thymosin was substantionally increased on the days 1 and 5 in culture after irradiation. The increase of thymulin level in cultural supernatants was less pronounced and displayed after irradiation during 3-4 minutes. Local laser irradiation of thymus region of rats (5 minutes, 10 times) induce the increase of serum concentration of α-1-thymosin and the decrease of serum level of thymulin 2 days after irradiation. 10 refs.; 2 figs

  14. Multichannel, time-resolved picosecond laser ultrasound imaging and spectroscopy with custom complementary metal-oxide-semiconductor detector

    International Nuclear Information System (INIS)

    This paper presents a multichannel, time-resolved picosecond laser ultrasound system that uses a custom complementary metal-oxide-semiconductor linear array detector. This novel sensor allows parallel phase-sensitive detection of very low contrast modulated signals with performance in each channel comparable to that of a discrete photodiode and a lock-in amplifier. Application of the instrument is demonstrated by parallelizing spatial measurements to produce two-dimensional thickness maps on a layered sample, and spectroscopic parallelization is demonstrated by presenting the measured Brillouin oscillations from a gallium arsenide wafer. This paper demonstrates the significant advantages of our approach to pump probe systems, especially picosecond ultrasonics.

  15. An EXAFS spectrometer on beam line 10B at the Photon Factory

    International Nuclear Information System (INIS)

    An EXAFS spectrometer installed on the beam line 10B at the Photon Factory is designed to cover the photon energy between 4 and 30 keV. Utilizing either a channel-cut or two flat silicon crystals as a monochromator, a beam intensity between 108 and 109 photons/sec is obtained at 9 keV with a resolution of 1 eV. The performance of the spectrometer, such as a signal-to-noise ratio or an energy resolution is demonstrated with examples of K edge absorption spectra of bromine, germanium, gallium arsenide, and zinc selenide. (author)

  16. Absence of phase-dependent noise in time-domain reflectivity studies of impulsively excited phonons

    KAUST Repository

    Hussain, A.

    2010-06-17

    There have been several reports of phase-dependent noise in time-domain reflectivity studies of optical phonons excited by femtosecond laser pulses in semiconductors, semimetals, and superconductors. It was suggested that such behavior is associated with the creation of squeezed phonon states although there is no theoretical model that directly supports such a proposal. We have experimentally re-examined the studies of phonons in bismuth and gallium arsenide, and find no evidence of any phase-dependent noise signature associated with the phonons. We place an upper limit on any such noise at least 40–50 dB lower than previously reported.

  17. A W-band RF-MEMS switched LNA in a 70 nm mHEMT process

    OpenAIRE

    Reyaz, Shakila; Gustafsson, Andreas; Samuelsson, Carl; Malmqvist, Robert; Grandchamp, Brice; Rantakari, Pekka; Vaha-Heikkila, Tauno

    2015-01-01

    This work presents a monolithic integrated reconfigurable active circuit consisting of a W-band RF micro-electro-mechanical-systems (MEMS) Dicke switch network and a wideband low-noise amplifier (LNA) realized in a 70 nm gallium arsenide (GaAs) metamorphic high electron mobility transistor process technology. The RF-MEMS LNA has a measured gain of 10.2-15.6 dB and 1.3-8.2 dB at 79-96 GHz when the Dicke switch is switched ON and OFF, respectively. Compared with the three-stage LNA used in this...

  18. Quantum interference and control of the dynamic Franz-Keldysh effect: Generation and detection of terahertz space-charge fields

    Science.gov (United States)

    Wang, Rui; Jacobs, Paul; Zhao, Hui; Smirl, Arthur L.

    2013-06-01

    The Dynamic Franz Keldysh Effect (DFKE) is produced and controlled in bulk gallium arsenide by quantum interference without the aid of externally applied fields and is spatially and temporally resolved using ellipsometric pump-probe techniques. The ˜3 THz internal driving field for the DFKE is a transient space-charge field that is associated with a critically damped coherent plasma oscillation produced by oppositely traveling ballistic electron and hole currents that are injected by two-color quantum interference techniques. The relative phase and polarization of the two pump pulses can be used to control the DFKE.

  19. Localized 3d states in spintronic materials - studies with use of synchrotron radiation

    International Nuclear Information System (INIS)

    Role of the open (partly occupied) d shells in solids containing transition metal atoms is of great importance. This shell contributes markedly to the valence band and determines the magnetic properties of the crystal. So, the properties of the system strongly depend on the relative strength of two competing factors: intra-shell correlation effects and interaction between d states and the electronic states of neighbouring atoms. In the paper, the investigations of an interesting example of such a compound - manganese arsenide - are presented

  20. Infrared and millimeter waves v.14 millimeter components and techniques, pt.V

    CERN Document Server

    Button, Kenneth J

    1985-01-01

    Infrared and Millimeter Waves, Volume 14: Millimeter Components and Techniques, Part V is concerned with millimeter-wave guided propagation and integrated circuits. In addition to millimeter-wave planar integrated circuits and subsystems, this book covers transducer configurations and integrated-circuit techniques, antenna arrays, optoelectronic devices, and tunable gyrotrons. Millimeter-wave gallium arsenide (GaAs) IMPATT diodes are also discussed. This monograph is comprised of six chapters and begins with a description of millimeter-wave integrated-circuit transducers, focusing on vario

  1. Transformational III-V Electronics

    KAUST Repository

    Nour, Maha A.

    2014-04-01

    Flexible electronics using III-V materials for nano-electronics with high electron mobility and optoelectronics with direct band gap are attractive for many applications. This thesis describes a complementary metal oxide semiconductor (CMOS) compatible process for transforming traditional III-V materials based electronics into flexible one. The thesis reports releasing 200 nm of Gallium Arsenide (GaAs) from 200 nm GaAs / 300 nm Aluminum Arsenide (AlAs) stack on GaAs substrate using diluted hydrofluoric acid (HF). This process enables releasing a single top layer compared to peeling off all layers with small sizes at the same time. This is done utilizing a network of release holes that contributes to the better transparency (45 % at 724 nm wavelengths) observed. Fabrication of metal oxide semiconductor capacitor (MOSCAPs) on GaAs is followed by releasing it to have devices on flexible 200 nm GaAs. Similarly, flexible GaSb and InP fabrication process is also reported to transform traditional electronics into large-area flexible electronics.

  2. Configuration dependence of band-gap narrowing and localization in dilute GaAs1 -xBix alloys

    Science.gov (United States)

    Bannow, Lars C.; Rubel, Oleg; Badescu, Stefan C.; Rosenow, Phil; Hader, Jörg; Moloney, Jerome V.; Tonner, Ralf; Koch, Stephan W.

    2016-05-01

    Anion substitution with bismuth (Bi) in III-V semiconductors is an effective method for experimental engineering of the band gap Eg at low Bi concentrations (≤2 % ), in particular in gallium arsenide (GaAs). The inverse Bi-concentration dependence of Eg has been found to be linear at low concentrations x and dominated by a valence band defect level anticrossing between As and Bi occupied p levels. Predictive models for the valence band hybridization require a first-principle understanding which can be obtained by density functional theory with the main challenges being the proper description of Eg and the spin-orbit coupling. By using an efficient method to include these effects, it is shown here that at high concentrations Eg is modified mainly by a Bi-Bi p orbital interaction and by the large Bi atom-induced strain. In particular, we find that at high concentrations, the Bi-Bi interactions depend strongly on model periodic cluster configurations, which are not captured by tight-binding models. Averaging over various configurations supports the defect level broadening picture. This points to the role of different atomic configurations obtained by varying the experimental growth conditions in engineering arsenide band gaps, in particular for telecommunication laser technology.

  3. Hybrid solar collector using nonimaging optics and photovoltaic components

    Science.gov (United States)

    Winston, Roland; Yablonovitch, Eli; Jiang, Lun; Widyolar, Bennett K.; Abdelhamid, Mahmoud; Scranton, Gregg; Cygan, David; Kozlov, Alexandr

    2015-08-01

    The project team of University of California at Merced (UC-M), Gas Technology Institute, and Dr. Eli Yablonovitch of University of California at Berkeley developed a novel hybrid concentrated solar photovoltaic thermal (PV/T) collector using nonimaging optics and world record single-junction Gallium arsenide (GaAs) PV components integrated with particle laden gas as thermal transfer and storage media, to simultaneously generate electricity and high temperature dispatchable heat. The collector transforms a parabolic trough, commonly used in CSP plants, into an integrated spectrum-splitting device. This places a spectrum-sensitive topping element on a secondary reflector that is registered to the thermal collection loop. The secondary reflector transmits higher energy photons for PV topping while diverting the remaining lower energy photons to the thermal media, achieving temperatures of around 400°C even under partial utilization of the solar spectrum. The collector uses the spectral selectivity property of Gallium arsenide (GaAs) cells to maximize the exergy output of the system, resulting in an estimated exergy efficiency of 48%. The thermal media is composed of fine particles of high melting point material in an inert gas that increases heat transfer and effectively stores excess heat in hot particles for later on-demand use.

  4. The quantum Hall effect branches out

    International Nuclear Information System (INIS)

    It is surprising when five theoretical papers all concerned with a single experimental result appear in the same journal. It is perhaps even more surprising when the topic is the quantum Hall effect - a phenomenon that is now over two decades old and has already yielded two Nobel prizes. The great excitement stems from the fact that this experiment and the new theories elegantly intertwine the quantum Hall effect with ferromagnetism, Bose condensation, superfluidity and the Josephson effect. Last year our group at the California Institute of Technology teamed up with Loren Pfeiffer and Ken West of Bell Labs to study how electrons tunnel between two parallel 2-D electron gases. These electrons reside in a semiconductor heterostructure consisting of two thin layers of gallium arsenide separated by a barrier layer of aluminium gallium arsenide. Surprisingly, we observed a huge enhancement in the tunnelling current when just the right magnetic field was applied perpendicular to the 2-D planes in which the electrons were confined (I B Spielman et al. 2000 Phys. Rev. Lett. 84 5808). In the June issue of Physics World, James P Eisenstein of the California Institute of Technology, USA, describes the experiment and explains where it may lead. (U.K.)

  5. Voltage adjusting characteristics in terahertz transmission through Fabry-Pérot-based metamaterials

    Directory of Open Access Journals (Sweden)

    Jun Luo

    2015-10-01

    Full Text Available Metallic electric split-ring resonators (SRRs with featured size in micrometer scale, which are connected by thin metal wires, are patterned to form a periodically distributed planar array. The arrayed metallic SRRs are fabricated on an n-doped gallium arsenide (n-GaAs layer grown directly over a semi-insulating gallium arsenide (SI-GaAs wafer. The patterned metal microstructures and n-GaAs layer construct a Schottky diode, which can support an external voltage applied to modify the device properties. The developed architectures present typical functional metamaterial characters, and thus is proposed to reveal voltage adjusting characteristics in the transmission of terahertz waves at normal incidence. We also demonstrate the terahertz transmission characteristics of the voltage controlled Fabry-Pérot-based metamaterial device, which is composed of arrayed metallic SRRs. To date, many metamaterials developed in earlier works have been used to regulate the transmission amplitude or phase at specific frequencies in terahertz wavelength range, which are mainly dominated by the inductance-capacitance (LC resonance mechanism. However, in our work, the external voltage controlled metamaterial device is developed, and the extraordinary transmission regulation characteristics based on both the Fabry-Pérot (FP resonance and relatively weak surface plasmon polariton (SPP resonance in 0.025-1.5 THz range, are presented. Our research therefore shows a potential application of the dual-mode-resonance-based metamaterial for improving terahertz transmission regulation.

  6. Strongly correlated electron phenomena in Pr-based filled skutterudite compounds

    International Nuclear Information System (INIS)

    Recent experiments on the Pr-based filled skutterudite arsenides and antimonides PrOs4Sb12, Pr(Os1-xRux)4Sb12, Pr1-xNdxOs4Sb12, PrFe4As12, PrRu4As12, and PrOs4As12 are reviewed. The heavy fermion compound PrOs4Sb12 exhibits unconventional strong-coupling superconductivity below Tc=1.85K that breaks time reversal symmetry, apparently consists of several distinct superconducting phases, and may involve triplet spin pairing of electrons. Studies of the alloy systems Pr(Os1-xRux)4Sb12 and Pr1-xNdxOs4Sb12 revealed rich T-x phase diagrams and a strong suppression of the high field ordered phase and the unconventional superconductivity of PrOs4Sb12 with Ru substitution. Among the three Pr-based filled skutterudite arsenides, PrFe4As12 has a ferromagnetic ground state, PrRu4As12 exhibits conventional BCS superconductivity, and PrOs4As12 is an antiferromagnet

  7. Strongly correlated electron phenomena in Pr-based filled skutterudite compounds

    Energy Technology Data Exchange (ETDEWEB)

    Maple, M.B. [Department of Physics and Institute for Pure and Applied Physical Sciences, University of California, San Diego, La Jolla, CA (United States)]. E-mail: mbmaple@physics.ucsd.edu; Henkie, Z. [Institute of Low Temperature and Structure Research, Polish Academy of Sciences, Wroclaw (Poland); Yuhasz, W.M. [Department of Physics and Institute for Pure and Applied Physical Sciences, University of California, San Diego, La Jolla, CA (United States); Ho, P.-C. [Department of Physics and Institute for Pure and Applied Physical Sciences, University of California, San Diego, La Jolla, CA (United States); Yanagisawa, T. [Department of Physics and Institute for Pure and Applied Physical Sciences, University of California, San Diego, La Jolla, CA (United States); Sayles, T.A. [Department of Physics and Institute for Pure and Applied Physical Sciences, University of California, San Diego, La Jolla, CA (United States); Butch, N.P. [Department of Physics and Institute for Pure and Applied Physical Sciences, University of California, San Diego, La Jolla, CA (United States); Jeffries, J.R. [Department of Physics and Institute for Pure and Applied Physical Sciences, University of California, San Diego, La Jolla, CA (United States); Pietraszko, A. [Institute of Low Temperature and Structure Research, Polish Academy of Sciences, Wroclaw (Poland)

    2007-03-15

    Recent experiments on the Pr-based filled skutterudite arsenides and antimonides PrOs{sub 4}Sb{sub 12}, Pr(Os{sub 1-x}Ru{sub x}){sub 4}Sb{sub 12}, Pr{sub 1-x}Nd{sub x}Os{sub 4}Sb{sub 12}, PrFe{sub 4}As{sub 12}, PrRu{sub 4}As{sub 12}, and PrOs{sub 4}As{sub 12} are reviewed. The heavy fermion compound PrOs{sub 4}Sb{sub 12} exhibits unconventional strong-coupling superconductivity below T{sub c}=1.85K that breaks time reversal symmetry, apparently consists of several distinct superconducting phases, and may involve triplet spin pairing of electrons. Studies of the alloy systems Pr(Os{sub 1-x}Ru{sub x}){sub 4}Sb{sub 12} and Pr{sub 1-x}Nd{sub x}Os{sub 4}Sb{sub 12} revealed rich T-x phase diagrams and a strong suppression of the high field ordered phase and the unconventional superconductivity of PrOs{sub 4}Sb{sub 12} with Ru substitution. Among the three Pr-based filled skutterudite arsenides, PrFe{sub 4}As{sub 12} has a ferromagnetic ground state, PrRu{sub 4}As{sub 12} exhibits conventional BCS superconductivity, and PrOs{sub 4}As{sub 12} is an antiferromagnet.

  8. Generalized Synthesis of EAs [E = Fe, Co, Mn, Cr] Nanostructures and Investigating Their Morphology Evolution

    Directory of Open Access Journals (Sweden)

    P. Desai

    2015-01-01

    Full Text Available This paper illustrates a novel route for the synthesis of nanostructured transition metal arsenides including those of FeAs, CoAs, MnAs, and CrAs through a generalized protocol. The key feature of the method is the use of one-step hot-injection and the clever use of a combination of precursors which are low-melting and highly reactive such as metal carbonyls and triphenylarsine in a solventless setup. This method also facilitates the formation of one-dimensional nanostructures as we move across the periodic table from CrAs to CoAs. The chemical basis of this reaction is simple redox chemistry between the transition metals, wherein the transition metal is oxidized from elemental state (E0 to E3+in lieu of reduction of As3+ to As3−. While the thermodynamic analysis reveals that all these conversions are spontaneous, it is the kinetics of the process that influences morphology of the product nanostructures, which varies from extremely small nanoparticles to nanorods. Transition metal pnictides show interesting magnetic properties and these nanostructures can serve as model systems for the exploration of their intricate magnetism as well as their applications and can also function as starting materials for the arsenide based nanosuperconductors.

  9. Diffusion in Intrinsic and Highly Doped III-V Semiconductors

    CERN Multimedia

    Stolwijk, N

    2002-01-01

    %title\\\\ \\\\Diffusion plays a key role in the fabrication of semiconductor devices. The diffusion of atoms in crystals is mediated by intrinsic point defects. Investigations of the diffusion behaviour of self- and solute atoms on the Ga sublattice of gallium arsenide led to the conclusion that in intrinsic and n-type material charged Ga vacancies are involved in diffusion processes whereas in p-type material diffusion if governed by charged Ga self-interstitials. Concerning the As sublattice of gallium arsenide there is a severe lack of reliable diffusion data. The few available literature data on intrinsic GaAs are not mutually consistent. A systematic study of the doping dependence of diffusion is completely missing. The most basic diffusion process - self-diffusion of As and its temperature and doping dependence - is practically not known. For GaP a similar statement holds.\\\\ \\\\The aim of the present project is to perform a systematic diffusion study of As diffusion in intrinsic and doped GaAs and in GaP. P...

  10. Heat load of a P-doped GaAs photocathode in SRF electron gun

    Energy Technology Data Exchange (ETDEWEB)

    Wang, E.; Ben-Zvi, I.; Kewisch, J.; Burrill, A.; Rao, T.; Wu, Q.; Jain, A.; Gupta, R.; Holmes, D.

    2010-05-23

    Many efforts were made over the last decades to develop a better polarized electron source for the high energy physics. Several laboratories operate DC guns with the Gallium-Arsenide photo-cathode, which yield a highly polarized electron beam. However, the beam's emittance might well be improved using a Superconducting RF electron gun, which delivers beams of higher brightness than DC guns does, because the field gradient at the cathode is higher. SRF guns with metal cathodes and CsTe cathodes have been tested successfully. To produce polarized electrons, a Gallium-Arsenide photo-cathode must be used: an experiment to do so in a superconducting RF gun is under way at BNL. Since the cathode will be normal conducting, the problem about the heat load stemming from the cathode arises. We present our measurements of the electrical resistance of GaAs at cryogenic temperatures, a prediction of the heat load and the verification by measuring the quality factor of the gun with and without cathode.

  11. Design of Ceramic Springs for Use in Semiconductor Crystal Growth in Microgravity

    Science.gov (United States)

    Kaforey, M. F.; Deeb, C. W.; Matthiesen, D. H.

    1999-01-01

    Segregation studies can be done in microgravity to reduce buoyancy driven convection and investigate diffusion-controlled growth during the growth of semiconductor crystals. During these experiments, it is necessary to prevent free surface formation in order to avoid surface tension driven convection (Marangoni convection). Semiconductor materials such as gallium arsenide and germanium shrink upon melting, so a spring is necessary to reduce the volume of the growth chamber and prevent the formation of a free surface when the sample melts. A spring used in this application must be able to withstand both the high temperature and the processing atmosphere. During the growth of gallium arsenide crystals during the GTE Labs/USAF/NASA GaAs GAS Program and during the CWRU GaAs programs aboard the First and Second United States microgravity Laboratories, springs made of pyrolytic boron nitride (PBN) leaves were used. The mechanical properties of these PBN springs have been investigated and springs having spring constants ranging from 0.25 N/mm to 25 N/mm were measured. With this improved understanding comes the ability to design springs for more general applications, and guidelines are given for optimizing the design of PBN springs for crystal growth applications.

  12. T-shaped emitter metal heterojunction bipolar transistors for submillimeter wave applications

    Science.gov (United States)

    Fung, Andy; Samoska, Lorene; Velebir, Jim; Siege, Peter; Rodwell, Mark; Paidi, Vamsi; Griffth, Zach; Urteaga, Miguel; Malik, Roger

    2004-01-01

    We report on the development of submillimeter wave transistors at JPL. The goal of the effort is to produce advance-reliable high frequency and high power amplifiers, voltage controlled oscillators, active multipliers, and high-speed mixed-signal circuits for space borne applications. The technology in development to achieve this is based on the Indium Phosphide (InP) Heterojunction Bipolar Transistor (HBT). The HBT is well suited for high speed, high power and uniform (across wafer) performance, due to the ability to tailor the material structure that electrons traverse through by well-controlled epitaxial growth methods. InP with its compatible lattice matched alloys such as indium gallium arsenide (InGaAs) and indium aluminium arsenide (InAlAs) provides for high electron velocities and high voltage breakdown capabilities. The epitaxial methods for this material system are fairly mature, however the implementation of high performance and reliable transistors are still under development by many laboratories. Our most recently fabricated, second generation mesa HBTs at JPL have extrapolated current gain cutoff frequency (FJ of 142GHz and power gain cutoff frequency (Fm,) of approximately 160GHz. This represents a 13% and 33% improvement of Ft and F, respectively, compared to the first generation mesa HBTs [l]. Analysis based on the University of California, Santa Barbara (UCSB) device model, RF device characteristics can be significantly improved by reducing base contact resistance and base metal contact width. We will describe our effort towards increasing transistor performance and yield.

  13. Rapid Progress of High Speed Short Haul Optical Interconnections in Optical Communication Systems

    Directory of Open Access Journals (Sweden)

    Ahmed Nabih Zaki Rashed

    2012-06-01

    Full Text Available This paper has proposed the new progress of optical interconnections is processed, taking into account the following items such as its ultimate device bandwidth, its available transmission bit rates based on either soliton or maximum time division multiplexing (MTDM transmission techniques, its ultimate transmission link bandwidth, and the product of the link bandwidth and its transmission length. Two items of special emphasis in the basic design of optical interconnection are: aluminum gallium arsenide (AlGaAs and Barium Fluoride (BaF2 waveguides, and the optical source cast as Vertical Cavity Surface Emitting Laser Diodes (VCSELD, made of either AlGaAs at operating wavelength of 0.85 µm or indium gallium arsenide phosphors (InGaAsP at operating wavelength of 0.65 µm, special emphasis is focused on the both above two items under different operating conditions including both the thermal and electrical effects. The optical interconnect is built up on the bases of two VCSELD and one optical link where thermal effects of both diodes and links are included. The good performance of the optical interconnect is deeply and parametrically investigated under wide ranges of the affecting parameters. The high speed performance is processed through three different effects, namely the device 3-dB bandwidth, and the link dispersion characteristics.

  14. “The Thermal Wave” in Technology of Crystal Growth from the Melt

    Directory of Open Access Journals (Sweden)

    V.G. Kosushkin

    2013-12-01

    Full Text Available It was found that the temperature fluctuations at the interface crystal-melt are the main reason for the formation of single crystals inhomogeneity grown by the Czochralski method. To reduce the heterogeneity of the layered method is proposed to reduce temperature fluctuations in the melt through the creation of artificial heat wave formed by the modulation of the heater temperature setting of growing single crystals. This paper describes the experimental technique to measure the temperature directly in the field of crystal growth of gallium arsenide from the melt. We investigated the possibility of special control actions for decreasing the temperature fluctuations at the crystallization front. These actions relate to the modification of the thermal and kinetic control parameters normally used in the Czochralski method of crystal growth, such as heater temperature, as well as crystal and crucible rotation rates. Unsteady low energetic thermal control actions (thermal waves, induced by periodic changes of the heater temperature are able to eliminate temperature fluctuations near the crystal / melt interface and may be a potential tool for the growth of striation-free gallium arsenide single crystals.

  15. Performance of a Double Gate Nanoscale MOSFET (DG-MOSFET Based on Novel Channel Materials

    Directory of Open Access Journals (Sweden)

    Rakesh Prasher

    2013-03-01

    Full Text Available In this paper, we have studied a double gate nanoscale MOSFET for various channel materials using simulation approach. The device metrics considered at the nanometer scale are subthreshold swing (SS, drain induced barrier lowering (DIBL, on and off current, carrier injection velocity (vinj, etc. The channel materials studied are Silicon (Si, Germanium (Ge, Gallium Arsenide (GaAs, Zinc Oxide (ZnO, Zinc Sulfide (ZnS, Indium Arsenide (InAs, Indium Phosphide (InP and Indium Antimonide (InSb. The results suggest that InSb and InAs materials have highest Ion and lowest Ioff values when used in the channel of the proposed MOSFET. Besides, InSb has the highest values for Ion / Ioff ratio, vinj, transconductance (gm and improved short channel effects (SS = 59.71 and DIBL = 1.14, both are very close to ideal values. More results such as effect of quantum capacitance verses gate voltage (Vgs, drain current (Ids vs. gate voltage and drain voltage (Vds, ratio of transconductance (gm and drain current (Id vs. gate voltage, average velocity vs. gate voltage and injection velocity (Vinj for the mentioned channel materials have been investigated. Various results obtained indicate that InSb and InAs as channel material appear to be suitable for high performance logic and even low operating power requirements for future nanoscale devices as suggested by latest ITRS reports.

  16. A new type-B cask design for transporting 252Cf

    International Nuclear Information System (INIS)

    A project to design, certify, and build a new US Department of Energy (DOE) Type B container for transporting >5 mg of 252Cf is more than halfway to completion. This project was necessitated by the fact that the existing Oak Ridge National Laboratory (ORNL) Type B containers were designed and built many years ago and thus do not have the records and supporting data that current regulations require. Once the new cask is available, it will replace the existing Type B containers. The cask design is driven by the unique properties of 252Cf, which is a very intense spontaneous fission neutron source and necessitates a large amount of neutron shielding. The cask is designed to contain up to 60 mg of 252Cf in the form of californium oxide or californium oxysulfate, in pellet, wire, or sintered material forms that are sealed inside small special-form capsules. The new cask will be capable of all modes of transport (land, sea, and air). The ORNL team, composed of technical and purchasing personnel and using rigorous selection criteria, chose NAC, International (NAC), as the subcontractor for the project. In January 1997, NAC started work on developing the conceptual design and performing the analyses. The original design concept was for a tungsten alloy gamma shield surrounded by two concentric shells of NS-4-FR neutron shield material. A visit to US Nuclear Regulatory Commission (NRC) regulators in November 1997 to present the conceptual design for their comments resulted in a design modification when the question of potential straight-line cracking in the NS-4-FR neutron shield material arose. NAC's modified design includes offset, wedgelike segments of the neutron shield material. The new geometry eliminates concerns about straight-line cracking but increases the weight of the packaging and makes the fabrication more complex. NAC has now completed the cask design and performed the analyses (shielding, structural, thermal, etc.) necessary to certify the cask. The cask

  17. The Development of Neutron Radiography and Tomography on a SLOWPOKE-2 Reactor

    Science.gov (United States)

    Bennett, L. G. I.; Lewis, W. J.; Hungler, P. C.

    Development of neutron radiography at the Royal Military College of Canada (RMC) started by trying to interest the Royal Canadian Air Force (RCAF) in this new non-destructive testing (NDT) technique. A Californium-252 based device was ordered and then installed at RMC for development of applicable techniques for aircraft by the first author. A second and transportable device was then designed, modified and used in trials at RCAF Bases and other locations for one year. This activity was the only foreign loan of the U.S. Californium Loan Program. Around this time, SLOWPOKE-2 reactors were being installed at four Canadian universities, while a new science and engineering building was being built at RMC. A reactor pool was incorporated and efforts to procure a reactor succeeded a decade later with a SLOWPOKE-2 reactor being installed at RMC. The only modification by the vendor for RMC was a thermal column replacing an irradiation site inside the reactor container for a later installation of a neutron beam tube (NBT). Development of a working NBT took several years, starting with the second author. A demonstration of the actual worth of neutron radiography took place with a CF-18 Hornet aircraft being neutron and X-radiographed at McClellan Air Force Base, Sacramento, CA. This inspection was followed by one of the rudders that had indications of water ingress being radiographed successfully at RMC just after the NBT became functional. The next step was to develop a neutron radioscopy system (NRS), initially employing film and then digital imaging, and is in use today for all flight control surfaces (FCS). With the third author, a technique capable of removing water from affected FCS was developed at RMC. Heating equipment and a vacuum system were utilized to carefully remove the water. This technique was proven using a sequence of near real time neutron images obtained during the drying process. The results of the drying process were correlated with a relative humidity

  18. Use of plasma desorption time-of-flight mass spectrometry to screen for products of prohormone processing in crude tissue extracts

    International Nuclear Information System (INIS)

    Californium-252 plasma desorption mass spectrometry (252Cf PDMS) of a crude, desalted, extract of piscine endocrine pancreas provided mass information for the major biologically active peptide hormones present in this tissue. An extraction procedure compatible with 252Cf PDMS analysis was developed. In extracts of catfish pancreas, strong molecular ions were identified in the positive mode for somatostatin-14 (1638 amu), O-glycosylated somatostatin-22 (2944 amu), glucagon (3512 amu), glucagon-like peptide (3785 amu), insulin (ca. 5550 amu), and other prohormone-derived peptides. Both protonated species and sodium adducts were apparent in the mass spectrum. A number of other molecular ions were observed including somatostatin-26, 1-10 (1014 amu) and the entire portion of prosomatostatin-22 remaining after removal of somatostatin-22 (6465 amu). The data obtained by this method also resulted in the identification of the third major product of proglucagon processing in catfish pancreas, glicentin-related polypeptide. Subtractive Edman degradation analyzed by 252Cf PDMS was also used to confirm a mass assignment

  19. Nuclear Chemistry Institute, Mainz University. Annual Report 1995

    International Nuclear Information System (INIS)

    The annual report of the Institut fuer Kernchemie addresses inter alia three main research activities. The first belongs to the area of basic research, covering studies in the fields of nuclear fission, chemistry of the super-heavy elements and of heavy-ion reactions extending from the Coulomb barrier to relativistic energies, and nuclear astrophysics in connection with the ''r process''. By means of laser technology, high-precision data could be measured of the ionization energies of berkelium and californium. Studies of atomic clusters in the vacuum of an ionization trap revealed interesting aspects. The second major activity was devoted to the analysis of environmental media, applying inter alia neutron activation analysis and resonance ionization mass spectroscopy (RIMS). The third activity resulted in the development of novel processes, or the enhancement of existing processes or methods, for applications in basic research work and in environmental analytics. Another item of interest is the summarizing report on the operation of the TRIGA research reactor. (orig./SR)

  20. Evolution of the Argonne Tandem Linear Accelerator System (ATLAS) control system

    International Nuclear Information System (INIS)

    Given that the Argonne Tandem Linear Accelerator System (ATLAS) recently celebrated its 25. anniversary, this paper will explore the past, present, and future of the ATLAS Control System, and how it has evolved along with the accelerator and control system technology. ATLAS as we know it today, originated with a Tandem Van de Graff in the sixties. With the addition of the Booster section in the late seventies, came the first computerized control. ATLAS itself was placed into service on June 25, 1985, and was the world's first superconducting linear accelerator for ions. Since its dedication as a National User Facility, more than a thousand experiments by more than 2,000 users worldwide, have taken advantage of the unique capabilities it provides. Today, ATLAS continues to be a user facility for physicists who study the particles that form the heart of atoms. Its most recent addition, CARIBU (Californium Rare Isotope Breeder Upgrade), creates special beams that feed into ATLAS. ATLAS is similar to a living organism, changing and responding to new technological challenges and research needs. As it continues to evolve, so does the control system: from the original days using a DEC PDP-11/34 computer and two CAMAC crates, to a DEC Alpha computer running Vsystem software and more than twenty CAMAC crates, to distributed computers and VME systems. Future upgrades are also in the planning stages that will continue to evolve the control system. (authors)