Chemical solution deposition of CaCu3Ti4O12 thin film

Indian Academy of Sciences (India)

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CaCu3Ti4O12; thin film; chemical solution deposition; dielectric properties. 1. Introduction. The CaCu3Ti4O12. (CCTO) compound has recently attracted considerable ... and Kelvin probe force microscopy (Chung et al 2004). Intrinsic .... SEM images of CCTO thin films as a function of sintering temperature. silicon based ...

Room temperature magnetic and dielectric properties of cobalt doped CaCu3Ti4O12 ceramics

Science.gov (United States)

Mu, Chunhong; Song, Yuanqiang; Wang, Haibin; Wang, Xiaoning

2015-05-01

CaCu3Ti4-xCoxO12 (x = 0, 0.2, 0.4) ceramics were prepared by a conventional solid state reaction, and the effects of cobalt doping on the room temperature magnetic and dielectric properties were investigated. Both X-ray diffraction and energy dispersive X-ray spectroscopy confirmed the presence of Cu and Co rich phase at grain boundaries of Co-doped ceramics. Scanning electron microscopy micrographs of Co-doped samples showed a striking change from regular polyhedral particle type in pure CaCu3Ti4O12 (CCTO) to sheet-like grains with certain growth orientation. Undoped CaCu3Ti4O12 is well known for its colossal dielectric constant in a broad temperature and frequency range. The dielectric constant value was slightly changed by 5 at. % and 10 at. % Co doping, whereas the second relaxation process was clearly separated in low frequency region at room temperature. A multirelaxation mechanism was proposed to be the origin of the colossal dielectric constant. In addition, the permeability spectra measurements indicated Co-doped CCTO with good magnetic properties, showing the initial permeability (μ') as high as 5.5 and low magnetic loss (μ″ < 0.2) below 3 MHz. And the interesting ferromagnetic superexchange coupling in Co-doped CaCu3Ti4O12 was discussed.

Experimental evidence of enhanced ferroelectricity in Ca doped BiFeO{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Costa, L.V.; Deus, R.C. [Universidade Estadual Paulista, UNESP, Faculdade de Engenharia de Guaratinguetá, Av. Dr. Ariberto Pereira da Cunha, 333, Bairro Portal das Colinas, CEP 12516-410 Guaratinguetá, SP (Brazil); Foschini, C.R.; Longo, E. [Universidade Estadual Paulista, UNESP, Faculdade de Engenharia de Bauru, Dept. de Eng. Mecânica, Av. Eng. Luiz Edmundo C. Coube 14-01, 17033-360 Bauru, SP (Brazil); Cilense, M. [Universidade Estadual Paulista, UNESP, Instituto de Química – Laboratório Interdisciplinar em Cerâmica (LIEC), Rua Professor Francisco Degni s/n, 14800-90 Araraquara, SP (Brazil); Simões, A.Z., E-mail: alezipo@yahoo.com [Universidade Estadual Paulista, UNESP, Faculdade de Engenharia de Guaratinguetá, Av. Dr. Ariberto Pereira da Cunha, 333, Bairro Portal das Colinas, CEP 12516-410 Guaratinguetá, SP (Brazil)

2014-04-01

Calcium (Ca)-doped bismuth ferrite (BiFeO{sub 3}) thin films prepared by using the polymeric precursor method (PPM) were characterized by X-ray diffraction (XRD), field emission gun scanning electron microscopy (FEG-SEM), transmission electron microscopy (TEM), polarization and piezoelectric measurements. Structural studies by XRD and TEM reveal the co-existence of distorted rhombohedral and tetragonal phases in the highest doped BiFeO{sub 3} where enhanced ferroelectric and piezoelectric properties are produced by internal strain. Resistive switching is observed in BFO and Ca-doped BFO which are affected by the barrier contact and work function of multiferroic materials and Pt electrodes. A high coercive field in the hysteresis loop is observed for the BiFeO{sub 3} film. Piezoelectric properties are improved in the highest Ca-doped sample due to changes in the crystal structure of BFO for a primitive cubic perovskite lattice with four-fold symmetry and a large tetragonal distortion within the crystal domain. This observation introduces magnetoelectronics at room temperature by combining electronic conduction with electric and magnetic degrees of freedom which are already present in the multiferroic BiFeO{sub 3}. - Highlights: • Ca doped BiFeO{sub 3} thin films were obtained by the polymeric precursor method. • Co-existence of distorted rhombohedral and tetragonal phases are evident. • Enhanced ferroelectric and piezoelectric properties are produced by the internal strain in the Ca doped BiFeO{sub 3} film.

Concentration effect of Ca2+ co-doping on Eu3+ doped YPO4 host nanoparticles

International Nuclear Information System (INIS)

Yaiphaba, N.; Phaomei, G.; Singh, N.R.

2013-01-01

YPO 4 doped Eu nanoparticles have been synthesized by ethylene glycol route at low temperature of 120 ℃. The host is co-doped with different concentration of Ca 2+ (Ca 2+ =0, 2, 3, 10 at.%). The samples were characterized by X-ray powder diffraction (XRD) and photoluminescence spectroscopy. XRD results show that the samples have only single tetragonal structure. Fig. 1 shows the expanded region of (hkl = 200) peak of all the samples in the range 25 to 27 ℃ in 2θ on the same day. The (200) peak position is shifted to higher 2θ from 25.8℃ to 26.2℃ when the concentration of Ca +2 increases upto 10 at.%. The crystallite size also decreases from 32 nm to 20 nm with increase in the concentration of Ca 2+ indicating decrease in the crystallinity of the prepared samples. Photoluminescence excitation spectra results show that the phosphor can be efficiently excited by ultra violet light from 250 to 400 nm including three peaks at 230, 255, and 394 nm. Emission spectra of Ca x Eu 0.05 Y 0.95-x PO 4 (x=0, 0.01, 0.03, 0.10) at 230 nm excitation shows that the intensity of the peak increases upto 1 atom % of Ca (x=0.01) and then decreases due to concentration quenching. These nanoparticles are found to be re-dispersible in water and ethanol and are incorporated into polyvinyl alcohol film homogeneously. This film showed bright red emission. (author)

Facile synthesis, structural characterization, and photoluminescence mechanism of Dy3+ doped YVO4 and Ca2+ co-doped YVO4:Dy3+ nano-lattices

Science.gov (United States)

Dhiren Meetei, Sanoujam; Deben Singh, Mutum; Dorendrajit Singh, Shougaijam

2014-05-01

Light plays a vital role in the evolution of life. From sunlight to candle-light and then to other form of lighting devices, human beings are utilizing light since time immemorial. Lighting devices such as conventional incandescent lamp and fluorescent lamp have been replaced by Light Emitting Diodes (LEDs) for the later is cheap, durable, etc. Now-a-days, phosphor converted LEDs have been burning issues in the fabrication of lighting devices. Especially, lanthanide ion(s) doped phosphors are of great interest for the same. However, doped phosphors have a limitation of luminescence quenching, i.e., instead of increasing luminescence on increasing dopant concentration, the luminescence decreases. Therefore, it must be rectified by one or other means so as to get maximum desirable intensity for uses in display or lighting devices. In the present work, YVO4:Dy3+ and YVO4:Dy3+/Ca2+ nano-lattices are synthesized by a facile technique. Structural characterizations such as x-ray diffraction, SEM, TEM, HRTEM, and Selected Area Electron Diffraction (SAED) of the samples are reported. Photoluminescence (PL) excitation and emission, enhanced mechanism, and lifetime are thoroughly discussed. PL intensity of the quenched YVO4:Dy3+ is made increased up to 432.63% by Ca2+ co-doping. Role of the Ca2+ on the luminescence enhanced mechanism of YVO4:Dy3+/Ca2+ is elucidated.

Phase evaluation of YSZ upon doping with Ta"5"+, Ti"4"+ and Ca"2"+ with combined Raman and XRD analysis

International Nuclear Information System (INIS)

Bhattacharya, A.; Shklover, V.; Wermelinger, T.

2012-01-01

To improve the phase stability of 7YSZ (7 wt%-Y_2O_3-doped ZrO_2), it has been doped with larger (Ca"2"+) and smaller (Ti"4"+ or Ta"5"+) ions. Complementary Raman and XRD studies of these stabilized systems have been performed. The tetragonal symmetry of the Ta"5"+-ion-doped YSZ sample and the Ti"4"+-doped YSZ sample, and the cubic symmetry of Ca"2"+-doped YSZ have been confirmed both by means of XRD and Raman analyses. Raman scattering measurements show shifts of characteristic peaks when the YSZ is doped with Ta"5"+, Ti"4"+ and Ca"2"+ cations. The peak shift increased with increasing dopant concentration in the ZrO_2 lattice. The Ta-doped YSZ sample heat-treated below 1500 C contained some YTaO_4 phase, which was confirmed by means of XRD as well as by Raman spectroscopy. The effect of Ca"2"+ ion doping on the Raman peak shift was much higher than that of Y"3"+ ion doping. In this work it has been highlighted that Raman spectroscopy is a useful tool complementing XRD, for qualitative comparison of the doping effect on the lattice parameters of ZrO_2.

Crystallographic Investigation of Ag (4 mol%) Doped ZnO (SZO) Thin Films by XRD

International Nuclear Information System (INIS)

Lwin Lwin Nwe; Sandar Dwe; Khant Khant Lin; Khin Thuzar; Than Than Win; Ko Ko Kyaw Soe

2008-03-01

Silver doped ZnO(SZO) thin films are prepared by sol-based method. The silver dopant concentration is 4 mol % in this case. XRD analysis carried out to determine, crystallographic properties such as lattice parameters and crystallite size of SZO thin films.

Structure and Dynamics Investigations of Sr/Ca-Doped LaPO₄ Proton Conductors

Energy Technology Data Exchange (ETDEWEB)

al-Wahish, Amal [Univ. of Missouri, Columbia, MO (United States). Research Reactor; al-Binni, U. [Univ. of Washington, Seattle, WA (United States). Dept. of Physics and Astronomy; Tetard, L. [Univ. of Central Florida, Orlando, FL (United States). NanoScience Technology Center; Bridges, Craig A. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Chemical Sciences Division; Kharel, Krishna [Lamar Univ., Beaumont, TX (United States). Dept. of Chemistry and Biochemistry; Günaydın-Şen, Özge [Lamar Univ., Beaumont, TX (United States). Dept. of Chemistry and Biochemistry; Huq, A. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Chemical and Engineering Materials Division; Musfeldt, J. L. [Univ. of Tennessee, Knoxville, TN (United States). Dept. of Chemistry; Univ. of Tennessee, Knoxville, TN (United States). Dept. of Physics and Astronomy; Paranthaman, M. P. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Chemical Sciences Division; Mandrus, D. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division; Univ. of Tennessee, Knoxville, TN (United States). Dept. of Physics and Astronomy; Univ. of Tennessee, Knoxville, TN (United States). Dept. of Materials Science and Engineering

2017-05-15

Proton conductors loom out of the pool of candidate materials with great potential to boost hydrogen alternatives to fossil-based resources for energy. Acceptor doped lanthanum orthophosphates are considered for solid oxide fuel cells (SOFCs) for their potential stability and conductivity at high temperature. By exploring the crystal and defect structure of x% Sr/Ca-doped LaPO₄ with different nominal Sr/Ca concentrations (x = 0 – 10) with Neutron powder diffraction (NPD) and X-ray powder diffraction (XRD), we confirm that Sr/Ca-doped LaPO₄ can exist as self-supported structures at high temperatures during solid oxide fuel cell operation. Thermal stability, surface topography, size distribution are also studied to better understand the proton conductivity for dry and wet compounds obtained at sintering temperatures ranging from 1200 to 1400 °C using a combination of scanning electron microscopy (SEM), Atomic Force Microscopy (AFM), Fourier transform infrared spectroscopy (FTIR) and electrochemical impedance spectroscopy (EIS). In conclusion, the results suggest that Sr doped samples exhibit the highest proton conductivity of our samples and illustrate the impact of material design and versatile characterization schemes on the development of proton conductors with superior functionality.

Lead-doped electron-beam-deposited Bi-Sr-Ca-Cu-O superconducting thin films

Energy Technology Data Exchange (ETDEWEB)

Agnihotry, S.A.; Saini, K.K.; Kant, C.; Sharma, C.P.; Ekbote, S.N.; Asthana, P.; Nagpal, K.C.; Chandra, S. (National Physical Lab., New Delhi (India))

1991-03-20

Superconducting thin films of the lead-doped Bi-Sr-Ca-Cu-O system have been prepared on (100) single-crystal SrTiO{sub 3} substrates by an electron beam deposition technique using a single sintered pellet as the evaporation source. As-deposited films are amorphous and non-superconducting; post-deposition annealing at an optimized temperature in air has been found to result in crystalline and superconducting films. The superconducting characteristics of the films have been observed to be sensitive not only to the duration and temperature of post-deposition annealing but also to the lead content and the sintering parameters for the pellet to be used as the evaporation source. A pellet with nominal composition Bi{sub 3}Pb{sub 1}Sr{sub 3}Ca{sub 3}Cu{sub 4}O{sub y} that had been sintered for 200 h zero resistivity Tc{sup 0}=112 K. However, films deposited using such a pellet as the evaporation source had Tc{sup 0} {approx equal} 73-78 K, as had the films deposited from a pellet without any lead. We investigated systematically films deposited from pellets with more lead and sintered for different durations. It is evident from these investigations that pellets with nominal composition Bi{sub 3}Pb{sub 2}Sr{sub 3}Ca{sub 3}Cu{sub 4}O{sub y}, i.e. with an excess of lead, and sintered for about 75 h when used as the evaporation source yield films with Tc{sup 0} {approx equal} 100 K when annealed between 835 and 840deg C for an optimized long duration. The films are characterized by X-ray diffraction and energy-dispersive spectroscopy techniques and have been found to be highly c axis oriented. The effect of lead in promoting a high Tc{sup 0}=110 K phase seems to be similar to that in bulk ceramics. (orig.).

Luminescence properties of pure and doped CaSO4 nanorods irradiated by 15 MeV e-beam

International Nuclear Information System (INIS)

Salah, Numan; Alharbi, Najlaa D.; Enani, Mohammad A.

2014-01-01

Calcium sulfate (CaSO 4 ) doped with proper activators is a highly sensitive phosphor used in different fields mainly for radiation dosimetry, lighting and display applications. In this work pure and doped nanorods of CaSO 4 were produced by the co-precipitation technique. Samples from this material doped with Ag, Cu, Dy, Eu and Tb were exposed to different doses of 15 MeV e-beam and studied for their thermoluminesence (TL) and photoluminescence (PL) properties. Color center formation leading to PL emissions were investigated before and after e-beam irradiation. The samples doped with rare earths elements (i.e. Dy, Eu and Tb) were observed to have thinner nanorods than the other samples and have higher absorption in the UV region. The Ag and Tb doped samples have poor TL response to e-beam, while those activated by Cu, Dy and Eu have strong glow peaks at around 123 °C. Quite linear response curves in the whole studied exposures i.e. 0.1–100 Gy were also observed in Cu and Dy doped samples. The PL results show that pure CaSO 4 nanorods have active color centers without irradiation, which could be enriched/modified by these impurities mainly rare earths and further enhanced by e-beam irradiation. Eu 3+ → Eu 2+ conversion is clearly observed in Eu doped sample after e-beam irradiation. These results show that these nanorods might be useful in lighting and display devices development

Fabrication and properties of samarium doped calcium sulphate thin films using spray pyrolysis technique

Energy Technology Data Exchange (ETDEWEB)

Reghima, Meriem [Université Tunis El Manar, Faculté des Sciences de Tunis, Département de Physique, LR99ES13 Laboratoire de Physique de la Matière Condensée (LPMC), 2092 Tunis, Tunisie (Tunisia); Institut d' Electronique et des systèmes, Unité Mixte de Recherche 5214 UM2-CNRS (ST2i) – Université Montpellier, 860 rue de Saint Priest, Bâtiment 5, 34097 Montpellier (France); Faculté des Sciences de Bizerte, Université de Carthage, Zarzouna 7021 (Tunisia); Guasch, Cathy [Institut d' Electronique et des systèmes, Unité Mixte de Recherche 5214 UM2-CNRS (ST2i) – Université Montpellier, 860 rue de Saint Priest, Bâtiment 5, 34097 Montpellier (France); Azzaza, Sonia; Alleg, Safia [Laboratoire de Magnétisme et Spectroscopie des Solides (LM2S), Département de Physique, Faculté des Sciences, Université Badji Mokhtar Annaba, B.P. 12, 23000 Annaba (Algeria); Kamoun-Turki, Najoua [Université Tunis El Manar, Faculté des Sciences de Tunis, Département de Physique, LR99ES13 Laboratoire de Physique de la Matière Condensée (LPMC), 2092 Tunis, Tunisie (Tunisia)

2016-10-01

Using low cost spray pyrolysis technique, polycrystalline CaSO{sub 4} thin films were successfully grown on a glass substrate with a thickness of about 1 μm. Samarium doping has been performed on CaSO{sub 4} thin films to explore luminescence properties. The characterizations of these films were carried out using X-ray diffraction, Scanning Electron Microscopy and optical measurements. The structural analyses reveal the existence of hexagonal CaSO{sub 4} phase with a (200) preferred orientation belonging to CaS compound for substrate temperatures below 350 °C. It is shown that the crystallinity of the sprayed thin films can be improved by increasing substrate temperature up to 250 °C. Warren-Averbach analysis has been applied on X-ray diffractogram to determine structural parameters involving the phase with its amount, the grain size and the lattice parameters using Maud software. The surface topography shows a rough surface covered by densely packed agglomerated clusters having faceted and hexagonal shapes. Energy dispersive microscopy measurements confirm the presence of calcium and sulfur in equal proportions as well as high percentage of oxygen. Photoluminescence at room temperature revealed that luminescence peaks are attributed to the intrinsic emission of pure CaSO{sub 4} phase. - Highlights: • Warren Averbach analysis reveal the presence of hcp structure of CaSO{sub 4} phase. • A mixture of CaSO{sub 4} and CaHO{sub 4.5}S phases has been detected for lower T{sub s}. • For increasing T{sub s}, the CaHO{sub 4.5}S phase has been disappeared. • The origin of PL peaks has been identified.

Photoluminescence in solid solutions and thin films of tungstates CaWO{sub 4}-CdWO{sub 4}

Energy Technology Data Exchange (ETDEWEB)

Taoufyq, A.; Mauroy, V.; Guinneton, F.; Valmalette, J-C. [University of Toulon, IM2NP, UMR CNRS 7334, La Garde, (France); Fiorido, T. [Aix Marseille University, IM2NP, UMR CNRS, 7334, Marseille, (France); Benlhachemi, A. [IBN ZOHR University, Faculty of sciences, Environment and Materials Laboratory, Agadir, (Morocco); Lyoussi, A. [CEA of Cadarache, DEN, Departement of reactors studies, experimental physics, Instrumentation Sensors and Dosimetry Laboratory, (France); Nolibe, G. [Cesigma society, signals and systems, La Garde, (France); Gavarri, J-R. [University of Toulon, IM2NP, UMR CNRS 7334, La Garde, (France)

2015-07-01

In this study, we present two types of studies on the luminescence properties under UV and X-ray excitations of solid solutions Ca{sub 1-x}Cd{sub x}WO{sub 4} and of thin layers of CaWO{sub 4} and CdWO{sub 4}. These tungstate based solid solutions are susceptible to be integrated into new radiation sensors, in order to be used in different fields of applications such as reactor measurements, safeguards, homeland security, nuclear nondestructive assays, LINAC emission radiation measurement. However these complex materials were rarely investigated in the literature. One first objective of our studies was to establish correlations between luminescence efficiency, chemical substitution and the degree of crystallization resulting from elaboration conditions. A second objective will be to determine the efficiency of luminescence properties of thin layers of these materials. In the present work, we focus our attention on the role of chemical substitution on photon emissions under UV and X-ray irradiations. The luminescence spectra of Ca{sub 1-x}Cd{sub x}WO{sub 4} polycrystalline materials have been investigated at room temperature as a function of composition (0≤x≤1). In addition, we present a preliminary study of the luminescence of CaWO{sub 4} and CdWO{sub 4} thin layers: oscillations observed in the case of X-ray excitations in the luminescence spectra are discussed. (authors)

Optical spectroscopy of rare-earth ions doped KY(WO4)2 thin films

NARCIS (Netherlands)

García-Revilla, S.; Valiente, R.; Romanyuk, Y.E.; Utke, I.; Pollnau, Markus

KY(WO4)2 thin films doped with Dy3+, Tb3+, Yb3+, were grown onto KY(WO4)2 substrates using liquid-phase epitaxy. Spectroscopic investigations of the grown layers were performed. Obtained results were compared with spectra given for bulk crystals. Upconversion experiments after direct Yb3+ excitation

Low temperature synthesis, characterization and tunable optical properties of Eu3+, Tb3+ doped CaMoO4 nanoparticles

International Nuclear Information System (INIS)

Sharma, K. Gayatri; Singh, Th. Prasanta; Singh, N. Rajmuhon

2014-01-01

Highlights: • Red and green nanophosphors of CaMoO 4 :Eu 3+ and Tb 3+ were synthesized via an ethylene glycol route at very low temperature. • The prepared nanoparticles have tetragonal structure. • The luminescence properties of the nanoparticles are also studied extensively. • CIE chromaticity coordinates of the phosphors are also studied. • The blue-green emission of host could be easily tuned to red or green by varying the dopant ion used in the host. - Abstract: CaMoO 4 doped with Eu 3+ and Tb 3+ nanoparticles are obtained using ethylene glycol as the solvent. The synthesis has been carried out at 130 °C temperature. The XRD patterns reveal that all the doped samples are well assigned to the scheelite structure of the CaMoO 4 phase. Upon excitation by ultraviolet radiation, the CaMoO 4 :Eu 3+ , Tb 3+ phosphors show the characteristic emission lines of Eu 3+ and Tb 3+ . For Eu 3+ doped samples, red emission dominates over other transitions and for Tb 3+ doped, green emission is the predominant one. The blue-green emission of the host could be easily tuned to red and green by doping with activator ions. The emission intensity is also dependent on the concentration of the dopant ions. The prepared nanoparticles could find applications in LEDs and other optical devices

Growth of Yb3+, Lu3+, Gd3+ co-doped KY(WO4)2 thin layers

NARCIS (Netherlands)

Aravazhi, S.; Geskus, D.; Pollnau, Markus; Worhoff, Kerstin; Agazzi, L.; Ismail, N.; Leijtens, X

2008-01-01

Rare-earth-ion-doped $KY(WO_4)_2 (KYW)$ is an important candidate for solid-state lasers. Its high refractive indices of the order of 2.0 make it attractive also for applications as integrated optical devices. Liquid phase epitaxy was employed for growing mono-crystalline KYW thin films co-doped

Luminescence properties of pure and doped CaSO{sub 4} nanorods irradiated by 15 MeV e-beam

Energy Technology Data Exchange (ETDEWEB)

Salah, Numan, E-mail: nsalah@kau.edu.sa [Center of Nanotechnology, King Abdulaziz University, Jeddah 21589 (Saudi Arabia); Alharbi, Najlaa D. [Sciences Faculty for Girls, King Abdulaziz University, Jeddah 21589 (Saudi Arabia); Enani, Mohammad A. [Dept. of Nuclear Engineering, Faculty of Engineering, King Abdulaziz University, Jeddah 21589 (Saudi Arabia)

2014-01-15

Calcium sulfate (CaSO{sub 4}) doped with proper activators is a highly sensitive phosphor used in different fields mainly for radiation dosimetry, lighting and display applications. In this work pure and doped nanorods of CaSO{sub 4} were produced by the co-precipitation technique. Samples from this material doped with Ag, Cu, Dy, Eu and Tb were exposed to different doses of 15 MeV e-beam and studied for their thermoluminesence (TL) and photoluminescence (PL) properties. Color center formation leading to PL emissions were investigated before and after e-beam irradiation. The samples doped with rare earths elements (i.e. Dy, Eu and Tb) were observed to have thinner nanorods than the other samples and have higher absorption in the UV region. The Ag and Tb doped samples have poor TL response to e-beam, while those activated by Cu, Dy and Eu have strong glow peaks at around 123 °C. Quite linear response curves in the whole studied exposures i.e. 0.1–100 Gy were also observed in Cu and Dy doped samples. The PL results show that pure CaSO{sub 4} nanorods have active color centers without irradiation, which could be enriched/modified by these impurities mainly rare earths and further enhanced by e-beam irradiation. Eu{sup 3+} → Eu{sup 2+} conversion is clearly observed in Eu doped sample after e-beam irradiation. These results show that these nanorods might be useful in lighting and display devices development.

Improvement of routes and production of CaSO4-based dosimeters with unusual doping

International Nuclear Information System (INIS)

Junot, Danilo Oliveira

2017-01-01

The widespread use of ionizing radiation in medicine and industry, associated with the known risks that this type of radiation can cause, has motivated the search for new radiation detectors, seeking improvements in the dosimetric characteristics and in the cost of production in comparison with commercial dosimeters disseminated. The motivation of this work is, therefore, to produce new thermoluminescent detectors through improved routes. Unusual elements in CaSO 4 matrix doping, such as terbium (Tb) and ytterbium (Yb), were used as dopants in this matrix, as well as the europium (Eu), the thulium (Tm) and the silver (Ag), resulting in samples of CaSO 4 :Eu,Tb, CaSO 4 :Tb,Yb, CaSO 4 :Tm,Ag and CaSO 4 :Eu,Ag that were prepared by means of an adaptation of the method developed by Yamashita (1971). The route of synthesis is based on the mixture of calcium carbonate (CaCO 3 ) and dopant oxide (except for silver, incorporated in the form of metallic nanoparticles) in a solution of sulfuric acid. The mixture is heated until all the acid evaporates and only the powder of the material remains. In this route, the sulfuric acid is collected and can be reused. The phosphors produced were characterized by X-ray diffraction and radioluminescence techniques. The silver particles, produced by the polyol method, were characterized by scanning electron microscopy. Composites were obtained from the addition of Teflon to the phosphors. The thermoluminescence (TL) and the optically stimulated luminescence (OSL) of the new materials produced were investigated. Thermoluminescent characteristics such as sensitivity, linearity, reproducibility, minimum detectable dose, kinetic order and fading were evaluated and discussed. The CaSO 4 :Tb,Eu composites showed TL glow curves with peaks at temperatures of 170 °C, 270 °C and 340 °C. The CaSO 4 :Tb,Yb composites presented TL glow curves with peaks at temperatures of 90 °C, 160 °C, 240 °C and 340 °C. CaSO 4 :Tm showed peaks at

Facile synthesis, structural characterization, and photoluminescence mechanism of Dy{sup 3+} doped YVO{sub 4} and Ca{sup 2+} co-doped YVO{sub 4}:Dy{sup 3+} nano-lattices

Energy Technology Data Exchange (ETDEWEB)

Dhiren Meetei, Sanoujam, E-mail: sdmdhiren@gmail.com; Dorendrajit Singh, Shougaijam, E-mail: dorendrajit@yahoo.co.in, E-mail: mdebensingh@gmail.com [Department of Physics, Manipur University, Canchipur, Imphal-795003, Manipur (India); Deben Singh, Mutum, E-mail: dorendrajit@yahoo.co.in, E-mail: mdebensingh@gmail.com [Department of Physics, Thambal Marik College, Oinam-795134, Bishnupur, Manipur (India)

2014-05-28

Light plays a vital role in the evolution of life. From sunlight to candle-light and then to other form of lighting devices, human beings are utilizing light since time immemorial. Lighting devices such as conventional incandescent lamp and fluorescent lamp have been replaced by Light Emitting Diodes (LEDs) for the later is cheap, durable, etc. Now-a-days, phosphor converted LEDs have been burning issues in the fabrication of lighting devices. Especially, lanthanide ion(s) doped phosphors are of great interest for the same. However, doped phosphors have a limitation of luminescence quenching, i.e., instead of increasing luminescence on increasing dopant concentration, the luminescence decreases. Therefore, it must be rectified by one or other means so as to get maximum desirable intensity for uses in display or lighting devices. In the present work, YVO{sub 4}:Dy{sup 3+} and YVO{sub 4}:Dy{sup 3+}/Ca{sup 2+} nano-lattices are synthesized by a facile technique. Structural characterizations such as x-ray diffraction, SEM, TEM, HRTEM, and Selected Area Electron Diffraction (SAED) of the samples are reported. Photoluminescence (PL) excitation and emission, enhanced mechanism, and lifetime are thoroughly discussed. PL intensity of the quenched YVO{sub 4}:Dy{sup 3+} is made increased up to 432.63% by Ca{sup 2+} co-doping. Role of the Ca{sup 2+} on the luminescence enhanced mechanism of YVO{sub 4}:Dy{sup 3+}/Ca{sup 2+} is elucidated.

Thermoelectric Properties of the Chemically Doped Ca3Co4O9 System: A Structural Perspective

Science.gov (United States)

Wu, Tao; Tyson, Trevor; Wang, Hsin; Li, Qiang

2010-03-01

Cu doped and Y doped [Ca2CoO3][CoO2]1.61 (referred to as Ca3Co4O9) were prepared by solid state reaction. Temperature dependent thermoelectric properties, resistivity (ρ), Seeback coefficient (S) and thermal conductivity (κ), were measured. As seen before, it is found that doping by Cu and Y significantly enhances the thermoelectric properties. In order to understand the origin of these changes in properties in terms of the atomic structure, synchrotron x-ray diffraction and x-ray absorption spectroscopy were applied to probe the change in the average structure and the location of the dopants. The details of the location and coordination of Co and Y in the host lattice and the effect on the figure of merit are discussed. This work is supported by DOE Grant DE-FG02-07ER46402.

Exchange stiffness of Ca-doped YIG

Science.gov (United States)

Avgin, I.; Huber, D. L.

1994-05-01

An effective medium theory for the zero-temperature exchange stiffness of uncompensated Ca-doped YIG is presented. The theory is based on the assumption that the effect of the Ca impurities is to produce strong, random ferromagnetic interactions between spins on the a and d sublattices. In the simplest version of the theory, a fraction, x, of the ad exchange integrals are large and positive, x being related to the Ca concentration. The stiffness is calculated as function of x for arbitrary perturbed ad exchange integral, Jxad. For Jxad≳(1/5)‖8Jaa+3Jdd‖, with Jaa and Jdd denoting the aa and dd exchange integrals, respectively, there is a critical concentration, Xc, such that when x≳Xc, the stiffness is complex. It is suggested that Xc delineates the region where there are significant departures from colinearity in the ground state of the Fe spins. Extension of the theory to a model where the Ca doping is assumed to generate Fe4+ ions on the tetrahedral sites is discussed. Possible experimental tests of the theory are mentioned.

Shape controlled synthesis of CaMoO4 thin films and their photoluminescence property

International Nuclear Information System (INIS)

Marques, Ana Paula de Azevedo; Longo, Valeria M.; Melo, Dulce M.A. de; Pizani, Paulo S.; Leite, Edson R.; Varela, Jose Arana; Longo, Elson

2008-01-01

CaMoO 4 (CMO) disordered and ordered thin films were prepared by the complex polymerization method (CPM). The films were annealed at different temperatures and time in a conventional resistive furnace (RF) and in a microwave (MW) oven. The microstructure and surface morphology of the structure were monitored by atomic force microscopy (AFM) and high-resolution scanning electron microscopy (HRSEM). Order and disorder were characterized by X-ray diffraction (XRD) and optical reflectance. A strong photoluminescence (PL) emission was observed in the disordered thin films and was attributed to complex cluster vacancies. The experimental results were compared with density functional and Hartree-Fock calculations. - Graphical abstract: CaMoO 4 thin films were prepared by the complex polymerization method (CPM). The films were annealed at different temperatures and time in a conventional resistive furnace and in a microwave oven. A strong photoluminescence emission was observed in the disordered thin films and was attributed to complex cluster vacancies. The experimental results were confirmed by high level first principle calculations

Influence of Al doping on structural and optical properties of Mg–Al co-doped ZnO thin films prepared by sol–gel method

International Nuclear Information System (INIS)

Fang, Dongyu; Lin, Kui; Xue, Tao; Cui, Can; Chen, Xiaoping; Yao, Pei; Li, Huijun

2014-01-01

Highlights: • Mg–Al co-doped ZnO thin films were prepared by sol–gel spin coating method. • The effects of Al doping on structural and optical properties of AMZO thin films were investigated. • The EDS spectra confirmed presence of Mg and Al elements in AMZO thin films. • The optical band gap of AMZO thin films increased with Al doping concentration increased. • The origin of the photoluminescence emissions was discussed. -- Abstract: Mg–Al co-doped ZnO (AMZO) thin films were successfully deposited onto quartz glass substrates by sol–gel spin coating method. The structure, surface morphology, composition, optical transmittance, and photoluminescence properties of AMZO thin films were characterized through X-ray diffraction, scanning electron microscopy with energy dispersive X-ray spectroscopy (EDS), transmission electron microscopy, UV–VIS–NIR spectrophotometry, and fluorescence spectrophotometry. The results indicated that AMZO thin films exhibited preferred orientation growth along the c-axis, and the full width at half maximum of the (0 0 2) diffraction peak decreased first and subsequently increased, reaching a minimum of approximately 0.275° at 3% Al content. The calculated crystallite size increased from 30.21 nm to 40.73 nm. Al doping content increased from 1% to 3% and subsequently reached 19.33 nm for Al doping content at 5%. The change in lattice parameters was demonstrated by the c/a ratio, residual stress, bond length, and volume per unit cell. EDS analysis confirmed the presence of Mg and Al elements in ZnO thin films. The atomic percentage of Mg and Al elements was nearly equal to their nominal stoichiometry within the experimental error. In addition, the optical transmittance of AMZO thin films was over 85% in the visible region, and the optical band gap increased with increasing Al doping concentration. Room temperature photoluminescence showed ultraviolet emission peak and defect emission peak. The defect emission peak of

Influence of film thickness and Fe doping on LPG sensing properties of Mn3O4 thin film grown by SILAR method

Science.gov (United States)

Belkhedkar, M. R.; Ubale, A. U.

2018-05-01

Nanocrystalline Fe doped and undoped Mn3O4 thin films have been deposited by Successive Ionic Layer Adsorption and Reaction (SILAR) method onto glass substrates using MnCl2 and NaOH as cationic and anionic precursors. The grazing incidence X-ray diffraction (GIXRD) and field emission scanning electron microscopy (FESEM)) have been carried out to analyze structural and surface morphological properties of the films. The LPG sensing performance of Mn3O4thin films have been studied by varying temperature, concentration of LPG, thickness of the film and doping percentage of Fe. The LPG response of the Mn3O4thin films were found to be enhances with film thickness and decreases with increased Fe doping (0 to 8 wt. %) at 573 K temperature.

Magnetic impurity effect on charge and magnetic order in doped La1.5Ca0.5CoO4

Science.gov (United States)

Horigane, K.; Hiraka, H.; Tomiyasu, K.; Ohoyama, K.; Louca, D.; Yamada, K.

2012-02-01

Neutron scattering experiments were performed on single crystals of magnetic impurity doped cobalt oxides La1.5Ca0.5CoO4 to characterize the charge and spin orders. We newly found contrasting impurity effects. Two types of magnetic peaks are observed at q = (0.5,0,L) with L = half-integer and integer in La1.5Ca0.5CoO4, while magnetic peak at L = half-integer (integer) was only observed in Mn (Fe)-substituted sample. Although Mn and Fe impurities degrade charge and magnetic order, Cr impurity stabilizes the ordering at x = 0.5. Based on the crystal structural analysis of Cr doped sample, we found that the excess oxygen and change of octahedron around Co3+ were realized in Cr doped sample.

Effects of Yttrium and Iron co-doping on the high temperature thermoelectric properties of Ca{sub 3}Co{sub 4}O{sub 9+δ}

Energy Technology Data Exchange (ETDEWEB)

Wu, NingYu, E-mail: niwu@dtu.dk; Van Nong, Ngo; Pryds, Nini; Linderoth, Søren

2015-07-25

Highlights: • The Fe and Fe/Y doping at the Co- and Ca-sites of Ca{sub 3}Co{sub 4}O{sub 9+δ} were investigated. • The rising ρ by Y doping can be mitigated by the coupled Fe doping. • The increased Seebeck coefficient by Y doping can be maintained in co-doped system. • The co-doped system leads to an improvement of the thermoelectric performance. • The co-doped system may preserve the merits from each component doping. - Abstract: A series of Y and Fe co-doped Ca{sub 3−x}Y{sub x}Co{sub 4−y}Fe{sub y}O{sub 9+δ} (0 ⩽ x ⩽ 0.3, 0 ⩽ y ⩽ 0.1) samples synthesized by auto-combustion reaction and followed by a spark plasma sintering (SPS) processing with the effects of Fe and Y doping on the high temperature (RT to 800 °C) thermoelectric properties were systematically investigated. For the Fe-doped system (x = 0, y ⩽ 0.1), the electrical resistivity (ρ) decreased over the whole measured temperature range, while the Seebeck coefficient (S) remained almost the same. For the co-doped system, at any fixed Fe doping content, both ρ and S tended to increase with increasing Y dopants, however, the effect is more substantial on ρ than on S, particularly in the low temperature regime. In contrast to ρ and S, the in-plane thermal conductivity (κ) is only slightly influenced by Y and Fe substitutions. Among all the investigated samples, the co-doped sample with x = 0.1 and y = 0.03 showed a decrease of ρ, enhanced power factor over the measured temperature range, and improved ZT at 800 °C as compared to un-doped Ca{sub 3}Co{sub 4}O{sub 9+δ}.

An investigation on photoluminescence and energy transfer of Eu{sup 3+}/Sm{sup 3+} single-doped and co-doped Ca{sub 4}YO(BO{sub 3}){sub 3} phosphors

Energy Technology Data Exchange (ETDEWEB)

Bandi, Vengala Rao; Grandhe, Bhaskar Kumar [Department of Physics, Changwon National University, Changwon 641-773 (Korea, Republic of); Jang, Kiwan, E-mail: kwjang@changwon.ac.kr [Department of Physics, Changwon National University, Changwon 641-773 (Korea, Republic of); Shin, Dong-Soo [Department of Chemistry, Changwon National University, Changwon (Korea, Republic of); Yi, Soung-Soo [Department of Photonics, Silla University, Busan (Korea, Republic of); Jeong, Jung-Hyun [Department of Physics, Pukyong National University, Busan (Korea, Republic of)

2013-07-15

The present investigation aims to demonstrate the potentiality of Eu{sup 3+}/Sm{sup 3+} single-doped and co-doped Ca{sub 4}YO(BO{sub 3}){sub 3} phosphors, which were prepared by a sol–gel method. The X-ray diffraction (XRD) profiles showed that all the observed peaks could be attributed to the monoclinic phase of Ca{sub 4}YO(BO{sub 3}){sub 3}. From the measured emission profiles, we have noticed that both the single-doped Eu{sup 3+}/Sm{sup 3+} phosphors shows four emission transitions of {sup 5}D{sub 0} → {sup 7}F{sub 0,1,2,3} and {sup 4}G{sub 5/2} → {sup 6}H{sub 5/2,7/2,9/2,11/2} respectively. Among them, the {sup 5}D{sub 0} → {sup 7}F{sub 2} of Eu{sup 3+} and {sup 4}G{sub 5/2} → {sup 6}H{sub 7/2} of Sm{sup 3+} are intense emission transitions, leading to an intense red color emission from the prepared phosphors. The excitation spectra showed that Eu{sup 3+}/Sm{sup 3+} doped samples can be excited efficiently by 394 nm and 402 nm respectively, incidentally which matches well with the characteristic emission from UVLED. The co-doping of Sm{sup 3+} ions can broaden and strengthen the absorption of near UV region and to be efficient to sensitize the emission of the Ca{sub 4}YO(BO{sub 3}){sub 3}:Eu{sup 3+} phosphor. The mechanism involved in the energy transfer between Eu{sup 3+} and Sm{sup 3+} has been explained and elucidated by an energy level diagram. - Highlights: • Eu{sup 3+} or/and Sm{sup 3+}:Ca{sub 4}YO(BO{sub 3}){sub 3} phosphors were prepared by sol–gel method. • The co-doping of Sm{sup 3+} to Ca{sub 4}YO(BO{sub 3}){sub 3}:Eu{sup 3+} extends its absorption of NUV region. • It has intense absorption in NUV region, which is suitable for NUV LED. • The energy transfer process between Eu{sup 3+} and Sm{sup 3+} ions were discussed.

Dosimeter properties of Ce and Eu doped LiCaAlF6

International Nuclear Information System (INIS)

Yanagida, Takayuki; Fujimoto, Yutaka; Watanabe, Kenichi; Fukuda, Kentaro

2014-01-01

Optical, scintillation properties, optical stimulated luminescence, and thermally stimulated luminescence of Ce 1, 3, and 5% doped and Eu 1, 1.5, and 2% doped LiCaAlF 6 crystals fabricated by Tokuyama Corp. were investigated. In transmittance, absorption was proportional to dopant concentrations and typical optical quantum yield of Ce and Eu-doped LiCaAlF 6 were 40 and 100%, respectively. Scintillation wavelength and decay time profiles were investigated under X-ray irradiation. Ce 3+ and Eu 2+ 5d-4f luminescence appeared around 300 nm and 370 nm with typical decay time of 40 ns and 1.5 μs, respectively. Optically stimulated luminescence of Ce-doped ones appeared under 405 nm stimulation with detectable intensity while those of Eu doped ones were quite weak. Thermally stimulated luminescence of Ce- and Eu-doped LiCaAlF 6 were enough strong and they exhibited good response function from 1 to 1000 mGy exposure. - Highlights: • Optical, scintillation, OSL, and TSL properties of Ce or Eu differently doped LiCaAlF6 were studied. • PL quantum yield of Ce and Eu doped LiCaAlF6 showed 40% and 100%, respectively. • OSL was observed in Ce-doped LiCaAlF6. • TSL was observed in both material systems and exhibited a good dose response from 1 to 1000 mGy

Development of sintered composites CaSO4 doped with Dy and Nd

International Nuclear Information System (INIS)

Chagas, M.A.P.; Parente, L.J.; Souza, D.N.

2007-01-01

The main of this work was the developing of sintered composites in order to use as thermoluminescent dosimeters using a simple route to preparation, employing high temperature. The composites were prepared with CaSO 4 .2H 2 O doped with Dy 2 O 3 and NdO 3 . Initially CaSO 4 .2H 2 O was dehydrated in oven at 100 deg C by 1h. After the addiction dopants and homogenization of compounds, PVA was incorporated to make easy to compaction of composites. The pellets with 6 mm of diameter and 1 mm thickness were sintered at 900 deg C and 1000 deg C by 6 h. The TL emission showed two peaks when the samples were irradiated with beta source (Sr 90 +Y 90 ). In all cases, the calibration curves presented responses proportional to absorbed dose. The results showed that this material have potential to be used in dosimetry. (author)

Donor doping process and white light generation in CaMoO4 powders with multivalence Pr codoping

International Nuclear Information System (INIS)

Zhu Fang; Xiao Zhisong; Zhang Feng; Yan Lu; Huang Anping

2011-01-01

Both trivalent praseodymium (Pr 3+ ) and quadrivalent praseodymium (Pr 4+ ) were doped in molybdate powders. Visible emission from matrix was enhanced by multivalent Pr codoping. It was proposed that Pr 3+ ions was donor and supplied quasi-free electron when Pr 3+ took place the Pr 4+ sites. The result showed that multivalence codoping would be an effective way to enhance emission of CaMoO 4 . White light can be generated from Ca 0.98 Pr 0.02 MoO 4 powder via combination of broadband emissions originated from CaMoO 4 matrix and radiative transition of Pr 3+ . It showed warm white light with T c of 3450 K that implies promising application in white light emitting diodes (LEDs).

Enhanced ultraviolet photo-response in Dy doped ZnO thin film

Science.gov (United States)

Kumar, Pawan; Singh, Ranveer; Pandey, Praveen C.

2018-02-01

In the present work, a Dy doped ZnO thin film deposited by the spin coating method has been studied for its potential application in a ZnO based UV detector. The investigations on the structural property and surface morphology of the thin film ensure that the prepared samples are crystalline and exhibit a hexagonal crystal structure of ZnO. A small change in crystallite size has been observed due to Dy doping in ZnO. AFM analysis ascertains the grain growth and smooth surface of the thin films. The Dy doped ZnO thin film exhibits a significant enhancement in UV region absorption as compared to the pure ZnO thin film, which suggests that Dy doped ZnO can be used as a UV detector. Under UV irradiation of wavelength 325 nm, the photocurrent value of Dy doped ZnO is 105.54 μA at 4.5 V, which is 31 times greater than that of the un-doped ZnO thin film (3.39 μA). The calculated value of responsivity is found to increase significantly due to the incorporation of Dy in the ZnO lattice. The observed higher value of photocurrent and responsivity could be attributed to the substitution of Dy in the ZnO lattice, which enhances the conductivity, electron mobility, and defects in ZnO and benefits the UV sensing property.

Improve photovoltaic performance of titanium dioxide nanorods based dye-sensitized solar cells by Ca-doping

International Nuclear Information System (INIS)

Li, Weixin; Yang, Junyou; Zhang, Jiaqi; Gao, Sheng; Luo, Yubo; Liu, Ming

2014-01-01

Highlights: • TiO 2 nanorods doped with Ca ions were synthesized by one-step hydrothermal method. • The flat band edge of rutile TiO 2 shifted positively via Ca-doping. • The photoelectric conversion efficiency of dye-sensitized solar cells (DSSCs) based on TiO 2 electrode was much enhanced by Ca-doping. • A relatively high open circuit voltage was obtained by adopting Ca-doped TiO 2 nanorods electrode. - Abstract: Ca-doped TiO 2 nanorod arrays were prepared via the one-step hydrothermal method successfully, and the effect of Ca ions content on the photovoltaic conversion efficiency of dye-sensitized solar cells has been fully discussed in the paper. Although no obvious change on the microstructure and morphology was observed by field emission scanning electron microscope and transmission electron microscope for the Ca-doped samples, the results of X-ray diffraction and X-ray photoelectron spectroscopy confirmed that Ti 4+ was substituted with Ca 2+ successfully. UV–vis spectroscopy results revealed that the flat band edge shifted positively by Ca ions doping. The photovoltaic conversion efficiency of the dye-sensitized solar cells based on the 2 mol% Ca-doped TiO 2 electrode was 43% higher than that of the undoped one due to the less recombination possibility

Low-temperature liquid phase epitaxy of rare-earth-ion doped KY(WO4)2 thin layers

NARCIS (Netherlands)

Romanyuk, Y.E.; Utke, I.; Ehrentraut, D.; Pollnau, Markus; Garcia-Revilla, S.; Valiente, R.; Kuleshov, N.V.

2004-01-01

Rare-earth-ion doped KY(WO4)2 (hereafter KYW) is a promising material for novel solid-state lasers. Low laser threshold, high efficiency, high output powers, and third-order nonlinear effects have stimulated research towards miniaturized thin-film waveguide lasers and amplifiers for future photonic

Investigation of the Optoelectronic Properties of Ti-doped Indium Tin Oxide Thin Film

Directory of Open Access Journals (Sweden)

Nen-Wen Pu

2015-09-01

Full Text Available : In this study, direct-current magnetron sputtering was used to fabricate Ti-doped indium tin oxide (ITO thin films. The sputtering power during the 350-nm-thick thin-film production process was fixed at 100 W with substrate temperatures increasing from room temperature to 500 °C. The Ti-doped ITO thin films exhibited superior thin-film resistivity (1.5 × 10−4 Ω/cm, carrier concentration (4.1 × 1021 cm−3, carrier mobility (10 cm2/Vs, and mean visible-light transmittance (90% at wavelengths of 400–800 nm at a deposition temperature of 400 °C. The superior carrier concentration of the Ti-doped ITO alloys (>1021 cm−3 with a high figure of merit (81.1 × 10−3 Ω−1 demonstrate the pronounced contribution of Ti doping, indicating their high suitability for application in optoelectronic devices.

Quantum effect on the energy levels of Eu2+ doped K2Ca2(SO4)3 nanoparticles.

Science.gov (United States)

Salah, Numan; Habib, Sami S; Khan, Zishan H

2010-09-01

Quantum confinement effect on the energy levels of Eu(2+) doped K(2)Ca(2)(SO(4))(3) nanoparticles has been observed. The broad photoluminescence (PL) emission band of Eu(2+) doped K(2)Ca(2)(SO(4))(3) microcrystalline sample observed at ∼436 nm is found to split into two narrow well resolved bands, located at 422 and 445 nm in the nanostructure form of this material. This has been attributed to the reduction in the crystal field strength of the nanomaterials, which results in widening the energy band gap and splitting the broad 4f(6)5d energy level of Eu(2+). Energy band gap values of the micro and nanocrystalline K(2)Ca(2)(SO(4))(3) samples were also determined by measuring the UV-visible absorption spectra. These values are 3.34 and 3.44 eV for the micro and nanocrystalline samples, respectively. These remarkable results suggest that activators having wide emission bands might be subjected to weak crystal strength via nanostructure materials to modify their electronic transitions. This might prove a powerful technique for producing new-advanced materials for use in the fields of solid state lasers and optoelectronic devises.

Structural and optical properties of ITO and Cu doped ITO thin films

Science.gov (United States)

Chakraborty, Deepannita; Kaleemulla, S.; Rao, N. Madhusudhana; Subbaravamma, K.; Rao, G. Venugopal

2018-04-01

(In0.95Sn0.05)2O3 and (In0.90Cu0.05Sn0.05)2O3 thin films were coated onto glass substrate by electron beam evaporation technique. The structural and optical properties of ITO and Cu doped ITO thin films have been studied by X-ray diffractometer (XRD) and UV-Vis-NIR spectrophotometer. The crystallite size obtained for ITO and Cu doped ITO thin films was in the range of 24 nm to 22 nm. The optical band gap of 4 eV for ITO thin film sample has been observed. The optical band gap decreases to 3.85 eV by doping Cu in ITO.

Ag- and Cu-doped multifunctional bioactive nanostructured TiCaPCON films

Energy Technology Data Exchange (ETDEWEB)

Shtansky, D.V., E-mail: shtansky@shs.misis.ru [National University of Science and Technology “MISIS”, Leninsky prospekt 4, Moscow 119049 (Russian Federation); Batenina, I.V.; Kiryukhantsev-Korneev, Ph.V.; Sheveyko, A.N.; Kuptsov, K.A. [National University of Science and Technology “MISIS”, Leninsky prospekt 4, Moscow 119049 (Russian Federation); Zhitnyak, I.Y.; Anisimova, N.Yu.; Gloushankova, N.A. [N.N. Blokhin Russian Cancer Research Center of RAMS, Kashirskoe shosse 24, Moscow 115478 (Russian Federation)

2013-11-15

A key property of multicomponent bioactive nanostructured Ti(C,N)-based films doped with Ca, P, and O (TiCaPCON) that can be improved further is their antibacterial effect that should be achieved without compromising the implant bioactivity and biocompatibility. The present work is focused on the study of structure, chemical, mechanical, tribological, and biological properties of Ag- and Cu-doped TiCaPCON films. The films with Ag (0.4–4 at.%) and Cu (13 at.%) contents were obtained by simultaneous sputtering of a TiC{sub 0.5}–Ca{sub 3}(PO{sub 4}){sub 2} target and either an Ag or a Cu target. The film structure was studied using X-ray diffraction, transmission and scanning electron microscopy, energy dispersive X-ray spectroscopy, glow discharge optical emission spectroscopy, and Raman-shift and IR spectroscopy. The films were characterized in terms of their hardness, elastic modulus, dynamic impact resistance, friction coefficient and wear rate (both in air and normal saline), surface wettability, electrochemical behavior and Ag or Cu ion release in normal saline. Particular attention was paid to the influence of inorganic bactericides (Ag and Cu ions) on the bactericidal activity against unicellular yeast fungus Saccharomyces cerevisiae and gram-positive bacteria Lactobacillus acidophilus, as well as on the attachment, spreading, actin cytoskeleton organization, focal adhesions, and early stages of osteoblastic cell differentiation. The obtained results show that the Ag-doped films are more suitable for the protection of metallic surfaces against bacterial infection compared with their Cu-doped counterpart. In particular, an excellent combination of mechanical, tribological, and biological properties makes Ag-doped TiCaPCON film with 1.2 at.% of Ag very attractive material for bioengineering and modification of load-bearing metal implant surfaces.

Photocatalytic characteristics for the nanocrystalline TiO{sub 2} on the Ag-doped CaAl{sub 2}O{sub 4}:(Eu,Nd) phosphor

Energy Technology Data Exchange (ETDEWEB)

Kim, Jung-Sik, E-mail: jskim@uos.ac.kr; Sung, Hyun-Je; Kim, Bum-Joon

2015-04-15

Highlights: • The photocatalytic reactivity of the TiO{sub 2}-coated on the Ag-doped long-lasting phosphor (CaAl{sub 2}O{sub 4}:Eu{sup 2+},Nd{sup 3+}). • The photodecomposition of benzene gas under visible light irradiation. • The TiO{sub 2}-coated on the Ag-doped long-lasting phosphor showed much higher photocatalytic reactivity. • The light emitted from the long-lasting phosphors contributed to the photo generation of TiO{sub 2}. - Abstract: This study investigated the photocatalytic behavior of nanocrystalline TiO{sub 2} deposited on Ag-doped long-lasting phosphor (CaAl{sub 2}O{sub 4}:Eu{sup 2+},Nd{sup 3+}). The CaAl{sub 2}O{sub 4}:Eu{sup 2+},Nd{sup 3+} phosphor powders were prepared via conventional sintering using CaCO{sub 3}, Al{sub 2}O{sub 3}, Eu{sub 2}O{sub 3}, and Nd{sub 2}O{sub 3} as raw materials according to the appropriate molar ratios. Silver nanoparticles were loaded on the phosphor by mixing with an aqueous Ag-dispersion solution. Nanocrystalline TiO{sub 2} was deposited on Ag-doped CaAl{sub 2}O{sub 4}:Eu{sup 2+},Nd{sup 3+} powders via low-pressure chemical vapor deposition (LPCVD). The TiO{sub 2} coated on the phosphor was actively photo-reactive under irradiation with visible light and showed much faster benzene degradation than pure TiO{sub 2}, which is almost non-reactive. The coupling of TiO{sub 2} with phosphor may result in an energy band bending in the junction region, which then induces the TiO{sub 2} crystal at the interface to be photo-reactive under irradiation with visible light. In addition, the intermetallic compound of CaTiO{sub 3} that formed at the interface between TiO{sub 2} and the CaAl{sub 2}O{sub 4}:(Eu{sup 2+},Nd{sup 3+}) phosphor results in the formation of oxygen vacancies and additional electrons that promote the photodecomposition of benzene gas. The addition of Ag nanoparticles enhanced the photocatalytic reactivity of the TiO{sub 2}/CaAl{sub 2}O{sub 4}:Eu{sup 2+},Nd{sup 3+} phosphor. TiO{sub 2} on the Ag-doped

Luminescence properties of Eu2+- and Ce3+-doped CaAl2S4 and application in white LEDs

International Nuclear Information System (INIS)

Yu Ruijin; Wang Jing; Zhang Jianhui; Yuan Haibin; Su Qiang

2008-01-01

The Eu 2+ - and Ce 3+ -doped CaAl 2 S 4 phosphors were comparatively synthesized by conventional solid-state reaction and the evacuated sealed quartz ampoule. The X-ray diffraction (XRD) patterns show that the sample with better crystalline quality was prepared by the evacuated sealed quartz ampoule, resulting in the enhancement of the emission intensity of Eu 2+ ion by a factor of 1.7. The intensive green LEDs were also fabricated by combining CaAl 2 S 4 :Eu 2+ with near-ultraviolet InGaN chips (λ em =395 nm). The dependence of as-fabricated green LEDs on forward-bias currents shows that it presents good chromaticity stability and luminance saturation, indicating that CaAl 2 S 4 :Eu 2+ is a promising green-emitting phosphor for a near-UV InGaN-based LED. In addition, the optical properties of CaAl 2 S 4 :Ce 3+ were systematically investigated by means of diffuse reflectance, photoluminescence excitation and emission, concentrating quenching and the decay curve. - Graphical abstract: The Eu 2+ - and Ce 3+ -doped CaAl 2 S 4 phosphors were comparatively synthesized by two methods. The emission intensity of Eu 2+ ion in sample synthesized by the evacuated sealed quartz ampoule method is by a factor of 1.7 as strong as that of Eu 2+ ion in sample prepared by the conventional solid-state reaction method

Development of sintered composites CaSO{sub 4} doped with Dy and Nd

Energy Technology Data Exchange (ETDEWEB)

Chagas, M.A.P.; Parente, L.J.; Souza, D.N. [Universidade Federal de Sergipe (UFS), Aracaju, SE (Brazil). Dept. de Fisica]. E-mails: mchagas@fisica.ufs.br; divanizi@ufs.br

2007-07-01

The main of this work was the developing of sintered composites in order to use as thermoluminescent dosimeters using a simple route to preparation, employing high temperature. The composites were prepared with CaSO{sub 4}.2H{sub 2}O doped with Dy{sub 2}O{sub 3} and NdO{sub 3}. Initially CaSO{sub 4}.2H{sub 2}O was dehydrated in oven at 100 deg C by 1h. After the addiction dopants and homogenization of compounds, PVA was incorporated to make easy to compaction of composites. The pellets with 6 mm of diameter and 1 mm thickness were sintered at 900 deg C and 1000 deg C by 6 h. The TL emission showed two peaks when the samples were irradiated with beta source (Sr{sup 90}+Y{sup 90}). In all cases, the calibration curves presented responses proportional to absorbed dose. The results showed that this material have potential to be used in dosimetry. (author)

Tensile Strain Effects on the Magneto-transport in Calcium Manganese Oxide Thin Films: Comparison with its Hole-doped Counterpart

Science.gov (United States)

Lawson, Bridget; Neubauer, Samuel; Chaudhry, Adeel; Hart, Cacie; Ferrone, Natalie; Houston, David; Yong, Grace; Kolagani, Rajeswari

Magnetoresistance properties of the epitaxial thin films of doped rare earth manganites are known to be influenced by the effect of bi-axial strain induced by lattice mismatch with the substrate. In hole-doped manganites, the effect of both compressive and tensile strain is qualitatively consistent with the expected changes in unit cell symmetry from cubic to tetragonal, leading to Jahn-Teller strain fields that affect the energy levels of Mn3 + energy levels. Recent work in our laboratory on CaMnO3 thin films has pointed out that tetragonal distortions introduced by tensile lattice mismatch strain may also have the effect of modulating the oxygen content of the films in agreement with theoretical models that propose such coupling between strain and oxygen content. Our research focuses on comparing the magneto-transport properties of hole-doped manganite LaCaMnO3 thin films with that of its electron doped counter parts, in an effort to delineate the effects of oxygen stoichiometry changes on magneto-transport from the effects of Jahn-Teller type strain. Towson University Office of Undergraduate Research, Fisher Endowment Grant and Undergraduate Research Grant from the Fisher College of Science and Mathematics, Seed Funding Grant from the School of Emerging technologies and the NSF Grant ECCS 112856.

Study the effect of sintering temperature on structural, microstructural and electromagnetic properties of 10% Ca-doped Mn_0_._6Zn_0_._4Fe_2O_4

International Nuclear Information System (INIS)

Rahaman, Md. D.; Dalim Mia, Md.; Khan, M.N.I.; Akther Hossain, A.K.M.

2016-01-01

Calcium doped manganese–zinc ferrite having the nominal composition Mn_0_._6_−_xCa_xZn_0_._4Fe_2O_4 (x=0.0, 0.1) were prepared via the conventional solid-state sintering method, which were sintered at 1150, 1200 and 1250 °C for 5 h. The microstructure and surface morphology were characterized by X-ray diffraction (XRD), Fourier Transform Infrared Spectroscopy (FTIR) and scanning electron microscope (SEM). XRD patterns revealed the formation of pure spinel phase ferrites with α-Fe_2O_3 impurity phase. FTIR spectra showed two absorption bands (ν_1 and ν_2) attributed to stretching vibration of tetrahedral and octahedral complex Fe"3"+–O"2"−, respectively. SEM micrographs displayed non-homogeneous grains of polyhedral shape but with increased grain size along with the increase of sintering temperature. Pure and calcium doped samples exhibit the highest dielectric constant at 1250 °C. Calcium doped sample has lower dielectric constant as compared to the pristine sample which is attributed to the retardation in electron exchange mechanism caused by lockup among iron and calcium ion. The dielectric loss peaks in pristine sample is attributed to the hopping frequency of Fe"2"+/Fe"3"+ between the tetrahedral and octahedral sites nearly equal to the frequency of the applied field. Calcium doped sample exhibits improved AC conductivity compare to the undoped sample at 1200 °C and 1250 °C because the electron hopping between Fe"3"+ and Fe"2"+ increases as the migration of Fe"3"+ to the B-sites increases with the occupancy of Ca"2"+ in the A-sites. Complex impedance spectra revealed that the conduction process is mainly attributed due to the processes which are associated with the grain and grain boundary in pristine sample and in calcium doped sample is associated with the grain only at 1150 and 1200 °C. Calcium substituted sample has lower permeability than that of pristine sample because Ca"2"+ can segregate the grain boundaries and creates an insulating

Structural, morphological and optical properties of spray deposited Mn-doped CeO2 thin films

International Nuclear Information System (INIS)

Pavan Kumar, CH.S.S.; Pandeeswari, R.; Jeyaprakash, B.G.

2014-01-01

Highlights: • Spray deposited undoped and Mn-doped CeO 2 thin films were polycrystalline. • Complete changeover of surface morphology upon 4 wt% Mn doping. • 4 wt% Mn-doped CeO 2 thin film exhibited a hydrophobic nature. • Optical band-gap decreases beyond 2 wt% Mn doping. - Abstract: Cerium oxide and manganese (Mn) doped cerium oxide thin films on glass substrates were prepared by home built spray pyrolysis system. The effect of Mn doping on the structural, morphological and optical properties of CeO 2 films were studied. It was found that both the undoped and doped CeO 2 films were polycrystalline in nature but the preferential orientation and grain size changed upon doping. Atomic force micrograph showed a complete changeover of surface morphology from spherical to flake upon doping. A water contact angle result displayed the hydrophobic nature of the doped CeO 2 film. Optical properties indicated an increase in band-gap and a decrease in transmittance upon doping owing to Moss–Burstein effect and inverse Moss–Burstein effects. Other optical properties such as refractive index, extinction coefficient and dielectric constant as a function of doping were analysed and reported

Effects of Mn doping on the ferroelectric properties of PZT thin films

International Nuclear Information System (INIS)

Zhang Qi

2004-01-01

The effects of Mn doping on the ferroelectric properties of Pb(Zr 0.3 Ti 0.7 )O 3 (PZT) thin films on Pt/Ti/SiO 2 /Si substrates have been investigated. The composition of the PZT and Mn doping level are Pb(Zr 0.3 Ti 0.7 ) 1-x Mn x O 3 (x = 0,0.2,0.5,1,2,4 mol%). The PZT thin films doped with a small amount of Mn 2+ (x ≤ 1) showed almost no hysteretic fatigue up to 10 10 switching bipolar pulse cycles, coupled with excellent retention properties. However, excessive additions of manganese made the fatigue behaviour worse. We propose that the addition of small amounts of Mn is able to reduce the oxygen vacancy concentration due to the combination of Mn 2+ and oxygen vacancies in PZT films, forming Mn 4+ ions. The interfacial layer between the Pt electrode and PZT films and Mn-doped PZT (x = 4) was detected by measuring the dielectric constant of thin films of different thickness. However, this interfacial layer was not detected in Mn-doped PZT (x = 1). These observations support the concept of the preferential electromigration of oxygen vacancies into sites in planes parallel to the electrodes, which is probably responsible for the hysteretic fatigue

Investigation of the Optoelectronic Properties of Ti-doped Indium Tin Oxide Thin Film.

Science.gov (United States)

Pu, Nen-Wen; Liu, Wei-Sheng; Cheng, Huai-Ming; Hu, Hung-Chun; Hsieh, Wei-Ting; Yu, Hau-Wei; Liang, Shih-Chang

2015-09-21

: In this study, direct-current magnetron sputtering was used to fabricate Ti-doped indium tin oxide (ITO) thin films. The sputtering power during the 350-nm-thick thin-film production process was fixed at 100 W with substrate temperatures increasing from room temperature to 500 °C. The Ti-doped ITO thin films exhibited superior thin-film resistivity (1.5 × 10 - ⁴ Ω/cm), carrier concentration (4.1 × 10 21 cm - ³), carrier mobility (10 cm²/Vs), and mean visible-light transmittance (90%) at wavelengths of 400-800 nm at a deposition temperature of 400 °C. The superior carrier concentration of the Ti-doped ITO alloys (>10 21 cm - ³) with a high figure of merit (81.1 × 10 - ³ Ω - ¹) demonstrate the pronounced contribution of Ti doping, indicating their high suitability for application in optoelectronic devices.

Morphological differences in transparent conductive indium-doped zinc oxide thin films deposited by ultrasonic spray pyrolysis

International Nuclear Information System (INIS)

Jongthammanurak, Samerkhae; Cheawkul, Tinnaphob; Witana, Maetapa

2014-01-01

In-doped ZnO thin films were deposited on glass substrates by an ultrasonic spray pyrolysis technique, using indium chloride (InCl 3 ) as a dopant and zinc acetate solution as a precursor. Increasing the [at.% In]/[at.% Zn] ratio changed the crystal orientations of thin films, from the (100) preferred orientation in the undoped, to the (101) and (001) preferred orientations in the In-doped ZnO thin films with 4 at.% and 6–8 at.%, respectively. Undoped ZnO thin film shows relatively smooth surface whereas In-doped ZnO thin films with 4 at.% and 6–8 at.% show surface features of pyramidal forms and hexagonal columns, respectively. X-ray diffraction patterns of the In-doped ZnO thin films with [at.% In]/[at.% Zn] ratios of 6–8% presented an additional peak located at 2-theta of 32.95°, which possibly suggested that a metastable Zn 7 In 2 O 10 phase was present with the ZnO phase. ZnO thin films doped with 2 at.% In resulted in a sheet resistance of ∼ 645 Ω/sq, the lowest value among thin films with [at.% In]/[at.% Zn] ratio in a range of 0–8%. The precursor molarity was changed between 0.05 M and 0.20 M at an [at.% In]/[at.% Zn] ratio of 2%. Increasing the precursor molarity in a range of 0.10 M–0.20 M resulted in In-doped ZnO thin films with the (100) preferred orientation. An In-doped ZnO thin film deposited by 0.20 M precursor showed a sheet resistance of 25 Ω/sq, and an optical transmission of 75% at 550 nm wavelength. The optical band gap estimated from the transmission result was 3.292 eV. - Highlights: • Indium-doped ZnO thin films were grown on glass using ultrasonic spray pyrolysis. • Thin films' orientations depend on In doping and Zn molarity of precursor solution. • Highly c-axis or a-axis orientations were found in the In-doped ZnO thin films. • In doping of 6–8 at.% may have resulted in ZnO and a metastable Zn 7 In 2 O 10 phases. • Increasing precursor molarity reduced sheet resistance of In-doped ZnO thin films

Effects of the F4TCNQ-Doped Pentacene Interlayers on Performance Improvement of Top-Contact Pentacene-Based Organic Thin-Film Transistors

Directory of Open Access Journals (Sweden)

Ching-Lin Fan

2016-01-01

Full Text Available In this paper, the top-contact (TC pentacene-based organic thin-film transistor (OTFT with a tetrafluorotetracyanoquinodimethane (F4TCNQ-doped pentacene interlayer between the source/drain electrodes and the pentacene channel layer were fabricated using the co-evaporation method. Compared with a pentacene-based OTFT without an interlayer, OTFTs with an F4TCNQ:pentacene ratio of 1:1 showed considerably improved electrical characteristics. In addition, the dependence of the OTFT performance on the thickness of the F4TCNQ-doped pentacene interlayer is weaker than that on a Teflon interlayer. Therefore, a molecular doping-type F4TCNQ-doped pentacene interlayer is a suitable carrier injection layer that can improve the TC-OTFT performance and facilitate obtaining a stable process window.

Effects of the F4TCNQ-Doped Pentacene Interlayers on Performance Improvement of Top-Contact Pentacene-Based Organic Thin-Film Transistors

Science.gov (United States)

Fan, Ching-Lin; Lin, Wei-Chun; Chang, Hsiang-Sheng; Lin, Yu-Zuo; Huang, Bohr-Ran

2016-01-01

In this paper, the top-contact (TC) pentacene-based organic thin-film transistor (OTFT) with a tetrafluorotetracyanoquinodimethane (F4TCNQ)-doped pentacene interlayer between the source/drain electrodes and the pentacene channel layer were fabricated using the co-evaporation method. Compared with a pentacene-based OTFT without an interlayer, OTFTs with an F4TCNQ:pentacene ratio of 1:1 showed considerably improved electrical characteristics. In addition, the dependence of the OTFT performance on the thickness of the F4TCNQ-doped pentacene interlayer is weaker than that on a Teflon interlayer. Therefore, a molecular doping-type F4TCNQ-doped pentacene interlayer is a suitable carrier injection layer that can improve the TC-OTFT performance and facilitate obtaining a stable process window. PMID:28787845

Europium and samarium doped calcium sulfide thin films grown by PLD

International Nuclear Information System (INIS)

Christoulakis, S.; Suchea, M; Katsarakis, N.; Koudoumas, E

2007-01-01

Europium and samarium doped calcium sulfide thin films (CaS:Eu,Sm) with different thickness were prepared by the pulsed laser deposition technique using sintered targets. A typical homemade deposition chamber and XeCl excimer laser (308 nm) were employed and the films were deposited in helium atmosphere onto silicon and corning glass substrates. Structural investigations carried out by X-ray diffraction and atomic force microscopy showed a strong influence of the deposition parameters on the film properties. The films grown had an amorphous or polycrystalline structure depending on growth temperature and the number of pulses used, the same parameters affecting the film roughness, the grain shape and dimensions, the film thickness and the optical transmittance. This work indicates that pulsed laser deposition can be a suitable technique for the preparation of CaS:Eu,Sm thin films, the film characteristics being controlled by the growth conditions

Synthesis, characterization and optical properties of ATiO{sub 3}–Pr thin films prepared by a photochemical method (where A = Ba and Ca)

Energy Technology Data Exchange (ETDEWEB)

Cabello, G., E-mail: gerardocabelloguzman@hotmail.com [Departamento de Ciencias Básicas, Facultad de Ciencias, Universidad del Bío-Bío, Chillán (Chile); Lillo, L.; Caro, C.; Seguel, M. [Departamento de Ciencias Básicas, Facultad de Ciencias, Universidad del Bío-Bío, Chillán (Chile); Buono-Core, G.E.; Huentupil, Y. [Instituto de Química, Pontificia Universidad Católica de Valparaíso, Valparaíso (Chile); Chornik, B. [Departamento de Física, Facultad de Ciencias Físicas y Matemáticas, Universidad de Chile, Santiago 8370415 (Chile); Carrasco, C.; Rodríguez, C.A. [Departamento de Ingeniería de Materiales, Facultad de Ingeniería, Universidad de Concepción, Edmundo Larenas 270, Concepción (Chile)

2015-10-15

Highlights: • A method of photochemical deposition has been used to the preparation of (Ba,Ca)TiO{sub 3} thin films doped Pr(III). • The (Ba,Ca)TiO{sub 3}/Pr(III) films under 375 nm excitation shows emissions attributable to {sup 1}D{sub 2} → {sup 3}H{sub 4} transition of Pr ion. • These PL signals decreased above 10 mol% of Pr(III). • Analysis suggests the presence of intermediate energy levels in the band gap influences in the PL processes. - Abstract: This article reports the characterization and optical properties of (Ba,Ca)TiO{sub 3} thin films doped with Pr at different proportions (0–15 mol%). The films were deposited on Si (1 0 0) and quartz substrates using a photochemical method and post-annealed at 900 °C. The evaluation of photo-reactivity of the precursor complexes was monitored by UV–vis and FT-IR spectroscopy. The obtained films were characterized by X-ray diffraction and X-ray photoelectron spectroscopy. The results indicate that Ba, Ca, Ti, O and Pr are present in the form of perovskite. Under UV light excitation (375 nm) the (Ba,Ca)TiO{sub 3}–Pr films show the characteristic emissions ascribed to {sup 1}D{sub 2} → {sup 3}H{sub 4} transition of Pr{sup 3+} ion. The optical measurements show the presence of intermediate energy levels in the band gap which influence the emission processes.

Electrical Properties of Photodiode Ba0.25Sr0.75TiO3 (BST Thin Film Doped with Ferric Oxide on p-type Si (100 Substrate using Chemical Solution Deposition Method

Directory of Open Access Journals (Sweden)

Irzaman

2011-12-01

Full Text Available In this paper we have grown pure Ba0.25Sr0.75TiO3 (BST and BST doped by Ferric Oxide Fe2O3 (BFST with doping variations of 5%, 10%, and 15% above type-p Silicon (100 substrate using the chemical solution deposition (CSD method with spin coating technique at rotation speed of 3000 rpm, for 30 seconds. BST thin film are made with a concentration of 1 M 2-methoxyethanol and annealing temperature of 850OC for the Si (100 substrate. Characterization of the thin film is performed for the electrical properties such as the current-voltage (I-V curve using Keithley model 2400 as well as dielectric constant, time constant, pyroelectric characteristics, and depth measurement. The results show that the thin film depth increases if the concentration of the Ferric Oxide doping increases. The I-V characterization shows that the BST and BFST thin film has photodiode properties. The dielectric constant increases with the addition of doping. The maximum dielectric constant value is obtained for 15 % doping concentration namely 83.1 for pure BST and 6.89, 11.1, 41.63 and 83.1, respectively for the Ferric Oxide doping based BST with concentration of 5%, 10%, and 15%. XRD spectra of 15 % of ferric oxide doped BST thin film tetragonal phase, we carried out the lattice constant were a = b = 4.203 Å; c = 4.214 Å; c/a ratio = 1.003

Scintillation and optical stimulated luminescence of Ce-doped CaF2

International Nuclear Information System (INIS)

Yanagida, Takayuki; Fujimoto, Yutaka; Watanabe, Kenichi; Fukuda, Kentaro; Kawaguchi, Noriaki; Miyamoto, Yuka; Nanto, Hidehito

2014-01-01

Scintillation and optical stimulated luminescence of Ce 0.1–20% doped CaF 2 crystals prepared by Tokuyama Corp. were investigated. In X-ray induced scintillation spectra, luminescence due to Ce 3+ 5d–4f transition appeared around 320 nm with typically 40 ns decay time. By 241 Am 5.5 MeV α-ray irradiation, 0.1% doped one showed the highest scintillation light yield and the light yield monotonically decreased with Ce concentrations. Optically stimulated luminescence after X-ray irradiation was observed around 320 nm under 550 or 830 nm stimulation in all samples. As a result, intensities of optically stimulated luminescence were proportional to Ce concentrations. Consequently, scintillation and optically stimulated luminescence resulted to have a complementary relation in Ce-doped CaF 2 system. - Highlights: • Optical, scintillation, and OSL properties of Ce 0.1–20% doped CaF 2 were studied. • Scintillation light yield exhibited inverse proportionality to Ce concentrations. • OSL intensities showed proportionality to Ce concentrations. • Complementary relation of scintillation and OSL was experimentally confirmed

Dielectric properties of Zr doped CaCu{sub 3}Ti{sub 4}O{sub 12} synthesized by sol-gel route

Energy Technology Data Exchange (ETDEWEB)

Jesurani, S. [Department of Physics, Jeyaraj Annapackium College for Women, Periyakulam 625 601, Tamil Nadu (India); Center for Material Science and Nano Devices, Department of Physics, SRM University, Kattankulathur 603 203, Tamil Nadu (India); Kanagesan, S., E-mail: kanagu1980@gmail.com [Materials Synthesis and Characterization Laboratory (MSCL), Institute of Advanced Technology (ITMA), Universiti Putra Malaysia, 43400 Serdang, Selangor (Malaysia); Hashim, M. [Materials Synthesis and Characterization Laboratory (MSCL), Institute of Advanced Technology (ITMA), Universiti Putra Malaysia, 43400 Serdang, Selangor (Malaysia); Physics Department, Faculty of Science, Universiti Putra Malaysia, 43400 Serdang, Selangor (Malaysia); Ismail, I. [Materials Synthesis and Characterization Laboratory (MSCL), Institute of Advanced Technology (ITMA), Universiti Putra Malaysia, 43400 Serdang, Selangor (Malaysia)

2013-02-25

Highlights: Black-Right-Pointing-Pointer Zr doped CaCu{sub 3}Ti{sub 4}O{sub 12} samples have been synthesized using sol-gel process. Black-Right-Pointing-Pointer The particle size of the powder ranges from 47 to 85 nm. Black-Right-Pointing-Pointer Less sintering at 1040 Degree-Sign C results in high density and high dielectric constant. - Abstract: Zr substituted CaCu{sub 3}Ti{sub 4-x}Zr{sub x}O{sub 12} (CCTZO) with x = 0.00, 0.02, 0.10, 0.20 and 0.50 mol% were prepared by sol-gel route from the metal nitrate solutions, Titanium isoproxide, and zirconium oxy chloride. XRD analysis confirmed the formation of a single phase material in the samples calcinated at 800 Degree-Sign C for 3 h. The crystal structure did not change on doping with zirconium and it remained cubic in all the four studied compositions. The permittivity and dielectric loss of 0.1 mol% Zr doped CaCu{sub 3}Ti{sub 4}O{sub 12} were improved for K Almost-Equal-To 6020 and tan {delta} Almost-Equal-To 0.52 at 1 kHz after the sample had been sintered at 1040 Degree-Sign C for 4 h. AFM studies showed that the particle size of the CCTZO powder ranged from 47 to 85 nm. FE-SEM micrographs of the CaCu{sub 3}Ti{sub 4-x}Zr{sub x}O{sub 12} samples showed that the grain size was in the range of 250 nm to 5 {mu}m for these samples. EDX studies showed the presence of calcium, copper, titanium, oxygen and zirconium. Remarkably, the dielectric constant increased and dielectric loss had lower values compared to the undoped CCTO.

On the photo-luminescence properties of sol–gel derived undoped and Dy3+ ion doped nanocrystalline Scheelite type AMoO4 (A = Ca, Sr and Ba)

International Nuclear Information System (INIS)

Jena, Paramananda; Gupta, Santosh K.; Natarajan, V.; Padmaraj, O.; Satyanarayana, N.; Venkateswarlu, M.

2015-01-01

Nanocrystalline Scheelite type Dy doped AMoO 4 [where A = Ba, Sr and Ca] samples were prepared by acrylamide assisted sol–gel process and characterized by XRD, FT-Raman, FTIR, SEM and photoluminescence (PL). PL of undoped sample shows blue/green emission in CaMoO 4 and SrMoO 4 but multicolour visible emission leading to near white light in BaMoO 4 nanoparticles; the origin of which is explained. It was observed that on doping 0.5 mol% of Dy 3+ in molybdate samples complete energy transfer takes place in case of SrMoO 4 and BaMoO 4 , but host contributed substantially in Dy doped BaMoO 4 sample, resulting in biexponential decay. It was also observed that symmetry around Dy 3+ decreases as the size of alkaline earth ion increases. Due to combined blue, yellow and red colour emission in dysprosium doped sample; all samples showed near white light emission under UV and near UV excitation

Non-destructive reversible resistive switching in Cr doped Mott insulator Ca2RuO4: Interface vs bulk effects

KAUST Repository

Shen, Shida; Williamson, Morgan; Cao, Gang; Zhou, Jianshi; Goodenough, John; Tsoi, Maxim

2017-01-01

A non-destructive reversible resistive switching is demonstrated in single crystals of Cr-doped Mott insulator Ca2RuO4. An applied electrical bias was shown to reduce the DC resistance of the crystal by as much as 75%. The original resistance

Thickness-modulated anisotropic ferromagnetism in Fe-doped epitaxial HfO2 thin films

Science.gov (United States)

Liu, Wenlong; Liu, Ming; Zhang, Ruyi; Ma, Rong; Wang, Hong

2017-10-01

Epitaxial tetragonal Fe-doped Hf0.95Fe0.05O2 (FHO) thin films with various thicknesses were deposited on (001)-oriented NdCaAlO4 (NCAO) substrates by using a pulsed laser deposition (PLD) system. The crystal structure and epitaxial nature of the FHO thin films were confirmed by typical x-ray diffraction (XRD) θ-2θ scan and reciprocal space mapping (RSM). The results indicate that two sets of lattice sites exist with two different crystal orientations [(001) and (100)] in the thicker FHO thin films. Further, the intensity of the (100) direction increases with the increase in thicknesses, which should have a significant effect on the anisotropic magnetization of the FHO thin films. Meanwhile, all the FHO thin films possess a tetragonal phase structure. An anisotropy behavior in magnetization has been observed in the FHO thin films. The anisotropic magnetization of the FHO thin films is slowly weakened as the thickness increases. Meanwhile, the saturation magnetization (Ms) of both in-plane and out-of-plane decreases with the increase in the thickness. The change in the anisotropic magnetization and Ms is attributed to the crystal lattice and the variation in the valence of Fe ions. These results indicate that the thickness-modulated anisotropic ferromagnetism of the tetragonal FHO epitaxial thin films is of potential use for the integration of metal-oxide semiconductors with spintronics.

Application of nanostructured Ca doped CeO2 for ultraviolet filtration

International Nuclear Information System (INIS)

Truffault, Laurianne; Ta, Minh-Tri; Devers, Thierry; Konstantinov, Konstantin; Harel, Valerie; Simmonard, Cyriaque; Andreazza, Caroline; Nevirkovets, Ivan P.; Pineau, Alain; Veron, Olivier; Blondeau, Jean-Philippe

2010-01-01

Calcium doped CeO 2 nanoparticles with doping concentrations between 0 and 50 mol% were synthesized by a co-precipitation method for ultraviolet filtration application. Below 20 mol% doping concentration, the samples were single-phase. From 30 mol%, CaCO 3 appears as a secondary phase. The calculated CeO 2 mean crystallite size was 9.3 nm for the pure and 5.7 nm for the 50 mol% Ca-doped sample. Between 250 and 330 nm, the absorbance increased for the 10, 30, and 40 mol% Ca-doped samples compared to the pure one. The band-gap was found to be 3.20 eV for the undoped, and between 3.36 and 3.51 eV for the doped samples. The blue shifts are attributed to the quantum confinement effect. X-ray photoelectron spectroscopy showed that the Ce 3+ atomic concentration in the pure sample was higher than that of the 20 mol% Ca-doped sample.

Synthesis and characterization of Fe doped cadmium selenide thin films by spray pyrolysis

Energy Technology Data Exchange (ETDEWEB)

Yadav, Abhijit A., E-mail: aay_physics@yahoo.co.in [Thin Film Physics Laboratory, Department of Physics, Electronics and Photonics, Rajarshi Shahu Mahavidyalaya, Latur 413 512, Maharashtra (India)

2012-12-05

Highlights: Black-Right-Pointing-Pointer Simple and inexpensive method to dope trivalent Fe in CdSe thin films. Black-Right-Pointing-Pointer Fe doped CdSe thin films are highly photosensitive. Black-Right-Pointing-Pointer AFM analysis shows uniform deposition of film over the entire substrate surface. Black-Right-Pointing-Pointer The band gap energy decreases from 1.74 to 1.65 eV with Fe doping. Black-Right-Pointing-Pointer Film resistivity decreases to 6.76 Multiplication-Sign 10{sup 4} {Omega}-cm with Fe doping in CdSe thin films. - Abstract: Undoped and Fe doped CdSe thin films have been deposited onto the amorphous and fluorine doped tin oxide coated glass substrates by spray pyrolysis. The Fe doping concentration has been optimized by photoelectrochemical (PEC) characterization technique. The structural, surface morphological, compositional, optical and electrical properties of undoped and Fe doped CdSe thin films have been studied. X-ray diffraction study reveals that the as deposited CdSe films possess hexagonal crystal structure with preferential orientation along (1 0 0) plane. AFM analysis shows uniform deposition of the film over the entire substrate surface with minimum surface roughness of 7.90 nm. Direct allowed type of transition with band gap decreasing from 1.74 to 1.65 eV with Fe doping has been observed. The activation energy of the films has been found to be in the range of 0.14-0.19 eV at low temperature and 0.27-0.44 eV at high temperature. Semi-conducting behavior has been observed from resistivity measurements. The thermoelectric power measurements reveal that the films are of n type.

Structural, morphological and optical properties of spray deposited Mn-doped CeO{sub 2} thin films

Energy Technology Data Exchange (ETDEWEB)

Pavan Kumar, CH.S.S.; Pandeeswari, R.; Jeyaprakash, B.G., E-mail: jp@ece.sastra.edu

2014-07-25

Highlights: • Spray deposited undoped and Mn-doped CeO{sub 2} thin films were polycrystalline. • Complete changeover of surface morphology upon 4 wt% Mn doping. • 4 wt% Mn-doped CeO{sub 2} thin film exhibited a hydrophobic nature. • Optical band-gap decreases beyond 2 wt% Mn doping. - Abstract: Cerium oxide and manganese (Mn) doped cerium oxide thin films on glass substrates were prepared by home built spray pyrolysis system. The effect of Mn doping on the structural, morphological and optical properties of CeO{sub 2} films were studied. It was found that both the undoped and doped CeO{sub 2} films were polycrystalline in nature but the preferential orientation and grain size changed upon doping. Atomic force micrograph showed a complete changeover of surface morphology from spherical to flake upon doping. A water contact angle result displayed the hydrophobic nature of the doped CeO{sub 2} film. Optical properties indicated an increase in band-gap and a decrease in transmittance upon doping owing to Moss–Burstein effect and inverse Moss–Burstein effects. Other optical properties such as refractive index, extinction coefficient and dielectric constant as a function of doping were analysed and reported.

Sorption properties and reversibility of Ti(IV) and Nb(V)-fluoride doped-Ca(BH4)2-MgH2 system

International Nuclear Information System (INIS)

Bonatto Minella, Christian; Garroni, Sebastiano; Pistidda, Claudio; Baró, Maria Dolors; Gutfleisch, Oliver; Klassen, Thomas; Dornheim, Martin

2015-01-01

Highlights: • Faster desorption reaction for doped materials vs. the pure composite system. • Kinetic improvement concerning re-hydrogenation reaction showed by the addition of NbF 5 . • Full characterization of the de-hydrogenation reaction pathway by means of both SR-PXD and 11 B{ 1 H} MAS-NMR. • Study of the evolution of the chemical state of the additives upon both milling and sorption reactions. - Abstract: In the last decade, alkaline and alkaline earth metal tetrahydroborates have been the focuses of the research due to their high gravimetric and volumetric hydrogen densities. Among them, Ca(BH 4 ) 2 and the Ca(BH 4 ) 2 + MgH 2 reactive hydride composites (RHC), were calculated to have the ideal thermodynamic properties which fall within the optimal range for mobile applications. In this study, the addition of NbF 5 or TiF 4 to the Ca(BH 4 ) 2 + MgH 2 reactive hydride composite system was attempted aiming to obtain a full reversible system with the simultaneous suppression of CaB 12 H 12 . Structural characterization of the specimens was performed by means of in-situ Synchrotron Radiation Powder X-ray diffraction (SR-PXD) and 11 B{ 1 H} Solid State Magic Angle Spinning-Nuclear Magnetic Resonance (MAS-NMR). The evolution of the chemical state of the Nb- and Ti-based additives was monitored by X-ray Absorption Near Edge Structure (XANES). The addition of NbF 5 or TiF 4 to the Ca(BH 4 ) 2 + MgH 2 system have not suppressed completely the formation of CaB 12 H 12 and only a slight improvement concerning the reversible reaction was displayed just in the case of Nb-doped composite material

Polarized spectra calculation and continuous wave laser operation of Yb-doped disordered Ca3La2(BO3)4 crystal

Science.gov (United States)

Wang, Yeqing; Chen, Aixi; You, Zhenyu; Tu, Chaoyang

2015-12-01

A notable disorder crystal Yb:Ca3La2(BO3)4 crystal with Yb3+ ion doping concentration of 10 at.% was grown by the Czochralski method. The polarized absorption, polarized emission, and polarized gain cross sections were systematically calculated. The laser operations were investigated with Yb:Ca3La2(BO3)4 crystals cut along the a, b, and c crystallographic axes. The highest output power of 3.88 W was obtained by using the b-cut Yb:Ca3La2(BO3)4 crystal, with a slope efficiency of 62%. Additionally, it was confirmed that the output laser spectra were largely dependent on the output coupler.

Polarized spectra calculation and continuous wave laser operation of Yb-doped disordered Ca3La2(BO3)4 crystal

International Nuclear Information System (INIS)

Wang, Yeqing; Chen, Aixi; You, Zhenyu; Tu, Chaoyang

2015-01-01

A notable disorder crystal Yb:Ca 3 La 2 (BO 3 ) 4 crystal with Yb 3+ ion doping concentration of 10 at.% was grown by the Czochralski method. The polarized absorption, polarized emission, and polarized gain cross sections were systematically calculated. The laser operations were investigated with Yb:Ca 3 La 2 (BO 3 ) 4 crystals cut along the a, b, and c crystallographic axes. The highest output power of 3.88 W was obtained by using the b-cut Yb:Ca 3 La 2 (BO 3 ) 4 crystal, with a slope efficiency of 62%. Additionally, it was confirmed that the output laser spectra were largely dependent on the output coupler. (paper)

The synthesis and luminescence properties of a novel red-emitting phosphor: Eu3+-doped Ca9La(PO4)7

Science.gov (United States)

Liang, Zehui; Mu, Zhongfei; Wang, Qiang; Zhu, Daoyun; Wu, Fugen

2017-10-01

A series of novel red-emitting phosphors Ca9La1- x (PO4)7: xEu3+ were synthesized by high-temperature solid state reactions. The photoluminescence excitation and photoluminescence spectra of these phosphors were investigated in detail. O2--Eu3+ charge transfer band peaking at about 261 nm is dominant in the PLE spectra of Eu3+-doped Ca9La(PO4)7, indicating that the phosphors are suitable for tricolor fluorescent lamps. The phosphors also show a good absorption in near ultraviolet (around 395 nm) and blue (around 465 nm) spectral region, which indicates that it can be pumped with NUV and blue chips for white light-emitting diodes. The transition of 5D0 → 7F2 of Eu3+ in this lattice can emit bright red light. Ca9La(PO4)7 could accommodate a large amount of Eu3+ with an optimal concentration of 60 mol%. The dipole-dipole interaction between Eu3+ is the dominant mechanism for concentration quenching of Eu3+. The calculated color coordinates lie in red region ( x = 0.64, y = 0.36), which is close to Y2O3: 0.05Eu3+ ( x = 0.65, y = 0.34). The integral emission intensity of Ca9La0.4(PO4)7: 0.6Eu3+ is 1.9 times stronger than that of widely used commercial red phosphor Y2O3: 0.05Eu3+. All these results indicate that Eu3+-doped Ca9La(PO4)7 is a promising red-emitting phosphor which can be used in tricolor fluorescent lamps and white light-emitting diodes.

In situ ellipsometry — A powerful tool for monitoring alkali doping of organic thin films

International Nuclear Information System (INIS)

Haidu, F.; Ludemann, M.; Schäfer, P.; Gordan, O.D.; Zahn, D.R.T.

2014-01-01

The changes of the optical properties of several organic thin films induced by potassium doping were monitored using in situ spectroscopic ellipsometry. The samples were prepared in a high vacuum chamber by organic molecular deposition. Then, potassium (K) was evaporated by passing current through K getters. The three different organic molecules used, show very distinct and different spectral behaviour upon doping. While for Tris-(8-hydroxyquinoline)-aluminium(III) and N,N′-Di-[(1-naphthyl)-N,N′-diphenyl]-(1,1′-biphenyl)-4,4′-diamine only small shifts of the spectral features were noticed, Manganese Phthalocyanine revealed significant changes of the optical properties induced by the K doping. This work indicates that the K doping process can have a dramatic effect on the electronic and the optical properties of the organic molecules, but the effect on the optical spectra remains specific for each organic molecule used, and cannot be easily predicted. - Highlights: • Monitoring organic film growth and doping with in situ spectroscopic ellipsometry • K doped organic thin films • Optical properties of organic thin films change by K doping. • The changes in the optical spectra remain specific for each organic molecule used

Low-temperature liquid-phase epitaxy and optical waveguiding of rare-earth-ion-doped KY(WO4)2 thin layers

NARCIS (Netherlands)

Romanyuk, Y.E.; Utke, I.; Ehrentraut, D.; Apostolopoulos, V.; Pollnau, Markus; Garcia-Revilla, S.; Valiente, B.

2004-01-01

Crystalline $KY(WO_{4})_{2}$ thin layers doped with different rare-earth ions were grown on b-oriented, undoped $KY(WO_{4})_{2}$ substrates by liquid-phase epitaxy employing a low-temperature flux. The ternary chloride mixture of NaCl, KCl, and CsCl with a melting point of 480°C was used as a

Theoretical investigation of electronic, magnetic and optical properties of Fe doped GaN thin films

International Nuclear Information System (INIS)

Salmani, E.; Mounkachi, O.; Ez-Zahraouy, H.; Benyoussef, A.; Hamedoun, M.; Hlil, E.K.

2013-01-01

Highlights: •Magnetic and optical properties Fe-doped GaN thin films are studied using DFT. •The band gaps of GaN thin films are larger than the one of the bulk. •The layer thickness and acceptor defect can switch the magnetic ordering. -- Abstract: Using first principles calculations based on spin-polarized density functional theory, the magnetic and optical properties of GaN and Fe-doped GaN thin films with and without acceptor defect is studied. The band structure calculations show that the band gaps of GaN thin films with 2, 4 and 6 layers are larger than the one of the bulk with wurtzite structure and decreases with increasing the film thickness. In Fe doped GaN thin films, we show that layer of thickness and acceptor defect can switch the magnetic ordering from disorder local moment (DLM) to ferromagnetic (FM) order. Without acceptor defect Fe doped GaN exhibits spin glass phase in 4 layers form and ferromagnetic state for 2 layers form of the thin films, while it exhibits ferromagnetic phase with acceptor defect such as vacancies defect for 2 and 4 layers. In the FM ordering, the thin films is half-metallic and is therefore ideal for spin application. The different energy between ferromagnetic state and disorder local moment state was evaluated. Moreover, the optical absorption spectra obtained by ab initio calculations confirm the ferromagnetic stability based on the charge state of magnetic impurities

Improvement of routes and production of CaSO{sub 4}-based dosimeters with unusual doping; Aprimoramento de rotas e producao de dosimetros a base de CaSO{sub 4} com dopagens nao usuais

Energy Technology Data Exchange (ETDEWEB)

Junot, Danilo Oliveira

2017-07-01

The widespread use of ionizing radiation in medicine and industry, associated with the known risks that this type of radiation can cause, has motivated the search for new radiation detectors, seeking improvements in the dosimetric characteristics and in the cost of production in comparison with commercial dosimeters disseminated. The motivation of this work is, therefore, to produce new thermoluminescent detectors through improved routes. Unusual elements in CaSO{sub 4} matrix doping, such as terbium (Tb) and ytterbium (Yb), were used as dopants in this matrix, as well as the europium (Eu), the thulium (Tm) and the silver (Ag), resulting in samples of CaSO{sub 4}:Eu,Tb, CaSO{sub 4}:Tb,Yb, CaSO{sub 4}:Tm,Ag and CaSO{sub 4}:Eu,Ag that were prepared by means of an adaptation of the method developed by Yamashita (1971). The route of synthesis is based on the mixture of calcium carbonate (CaCO{sub 3}) and dopant oxide (except for silver, incorporated in the form of metallic nanoparticles) in a solution of sulfuric acid. The mixture is heated until all the acid evaporates and only the powder of the material remains. In this route, the sulfuric acid is collected and can be reused. The phosphors produced were characterized by X-ray diffraction and radioluminescence techniques. The silver particles, produced by the polyol method, were characterized by scanning electron microscopy. Composites were obtained from the addition of Teflon to the phosphors. The thermoluminescence (TL) and the optically stimulated luminescence (OSL) of the new materials produced were investigated. Thermoluminescent characteristics such as sensitivity, linearity, reproducibility, minimum detectable dose, kinetic order and fading were evaluated and discussed. The CaSO{sub 4}:Tb,Eu composites showed TL glow curves with peaks at temperatures of 170 °C, 270 °C and 340 °C. The CaSO{sub 4}:Tb,Yb composites presented TL glow curves with peaks at temperatures of 90 °C, 160 °C, 240 °C and 340 °C. Ca

Physical properties of Fe doped Mn3O4 thin films synthesized by SILAR method and their antibacterial performance against E. coli

Directory of Open Access Journals (Sweden)

M.R. Belkhedkar

2016-09-01

Full Text Available Nanocrystalline Fe doped Mn3O4 thin films were deposited by successive ionic layer adsorption and reaction method onto glass substrates. The X-ray diffraction study revealed that Fe doped Mn3O4 films are nanocrystalline in nature. The morphological investigations were carried out by using field emission scanning electron and atomic force microscopy studies. The optical absorption measurements showed that Mn3O4 films exhibit direct band gap energy of the order of 2.78 eV and it increased to 2.89 eV as the percentage of Fe doping in it increases from 0 to 8 wt.%. The room temperature electrical resistivity of Mn3O4 increases from 1.84 × 103 to 2.64 × 104 Ω cm as Fe doping increases from 0 to 8 wt.%. The SILAR grown Mn3O4 showed antibacterial performance against Escherichia coli bacteria which improved remarkably with doping.

Magnetic hysteresis of cerium doped bismuth ferrite thin films

International Nuclear Information System (INIS)

Gupta, Surbhi; Tomar, Monika; Gupta, Vinay

2015-01-01

The influence of Cerium doping on the structural and magnetic properties of BiFeO 3 thin films have been investigated. Rietveld refinement of X-ray diffraction data and successive de-convolution of Raman scattering spectra of Bi 1−x Ce x FeO 3 (BCFO) thin films with x=0–0.20 reflect the single phase rhombohedral (R3c) formation for x<0.08, whereas concentration-driven gradual structural phase transition from rhombohedral (R3c) to partial tetragonal (P4mm) phase follows for x≥0.08. All low wavenumber Raman modes (<300 cm −1 ) showed a noticeable shift towards higher wavenumber with increase in doping concentration, except Raman E-1 mode (71 cm −1 ), shows a minor shift. Sudden evolution of Raman mode at 668 cm −1 , manifested as A 1 -tetragonal mode, accompanied by the shift to higher wavenumber with increase in doping concentration (x) affirm partial structural phase transition. Anomalous wasp waist shaped (M–H) hysteresis curves with improved saturation magnetization (M s ) for BCFO thin films is attributed to antiferromagnetic interaction/hybridization between Ce 4f and Fe 3d electronic states. The contribution of both hard and soft phase to the total coercivity is calculated. Polycrystalline Bi 0.88 Ce 0.12 FeO 3 thin film found to exhibit better magnetic properties with M s =15.9 emu/g without any impure phase. - Highlights: • Synthesis of single phase Bi 1−x Ce x FeO 3 thin films with (x=0–0.2) on cost effective corning glass and silicon substrates using CSD technique. • Structural modification studies using Rietveld refinement of XRD and de-convolution of Raman spectra revealed partial phase transition from rhombohedral (R3c) to tetragonal (P4mm) phase. • Possible reasons for origin of pinched magnetic behavior of BCFO thin films are identified. • Contribution of both hard and soft magnetic phase in coercivity of BCFO thin films is calculated and practical applications of such materials exhibiting pinching behavior are conferred

Magnetic hysteresis of cerium doped bismuth ferrite thin films

Energy Technology Data Exchange (ETDEWEB)

Gupta, Surbhi [Department of Physics and Astrophysics, University of Delhi (India); Tomar, Monika [Physics Department, Miranda House, University of Delhi (India); Gupta, Vinay, E-mail: drguptavinay@gmail.com [Department of Physics and Astrophysics, University of Delhi (India)

2015-03-15

The influence of Cerium doping on the structural and magnetic properties of BiFeO{sub 3} thin films have been investigated. Rietveld refinement of X-ray diffraction data and successive de-convolution of Raman scattering spectra of Bi{sub 1−x}Ce{sub x}FeO{sub 3} (BCFO) thin films with x=0–0.20 reflect the single phase rhombohedral (R3c) formation for x<0.08, whereas concentration-driven gradual structural phase transition from rhombohedral (R3c) to partial tetragonal (P4mm) phase follows for x≥0.08. All low wavenumber Raman modes (<300 cm{sup −1}) showed a noticeable shift towards higher wavenumber with increase in doping concentration, except Raman E-1 mode (71 cm{sup −1}), shows a minor shift. Sudden evolution of Raman mode at 668 cm{sup −1}, manifested as A{sub 1}-tetragonal mode, accompanied by the shift to higher wavenumber with increase in doping concentration (x) affirm partial structural phase transition. Anomalous wasp waist shaped (M–H) hysteresis curves with improved saturation magnetization (M{sub s}) for BCFO thin films is attributed to antiferromagnetic interaction/hybridization between Ce 4f and Fe 3d electronic states. The contribution of both hard and soft phase to the total coercivity is calculated. Polycrystalline Bi{sub 0.88}Ce{sub 0.12}FeO{sub 3} thin film found to exhibit better magnetic properties with M{sub s}=15.9 emu/g without any impure phase. - Highlights: • Synthesis of single phase Bi{sub 1−x}Ce{sub x}FeO{sub 3} thin films with (x=0–0.2) on cost effective corning glass and silicon substrates using CSD technique. • Structural modification studies using Rietveld refinement of XRD and de-convolution of Raman spectra revealed partial phase transition from rhombohedral (R3c) to tetragonal (P4mm) phase. • Possible reasons for origin of pinched magnetic behavior of BCFO thin films are identified. • Contribution of both hard and soft magnetic phase in coercivity of BCFO thin films is calculated and practical

Tantalum-doped hydroxyapatite thin films: Synthesis and characterization

International Nuclear Information System (INIS)

Ligot, S.; Godfroid, T.; Music, D.; Bousser, E.; Schneider, J.M.; Snyders, R.

2012-01-01

To achieve a good bioactivity, magnetron-sputtered (MS) hydroxyapatite (HA) coatings have to be stoichiometric and crystalline. It has also been suggested that doping HA with metallic elements improves its bioactivity but frequently reduces its Young’s modulus. Therefore, efforts are still necessary to identify adequate growth conditions, good doping elements and finally to grow doped HA films. In a first attempt, HA films have been synthesized by MS. Our conditions enabled us to grow at ∼10 nm min −1 stoichiometric and crystallized HA coatings that presented a strong texture. The latter is discussed in view of the competitive growth of the material under the strong electron and ion bombardments used here. Based on ab initio calculations identifying Ta as a promising doping element, we then investigated the growth of Ta-doped hydroxyapatite (HA:Ta) by magnetron co-sputtering. The HA:Ta films were in situ crystallized. Our data reveals that for Ta contents <4.5 at.%, Ta could substitute Ca in the HA cell. For higher doping contents, a deviation from the stoichiometric compound is observed and CaO appears. By nanoindentation, we have measured an elastic modulus of 120 ± 9 GPa for a Ta content of 3 at.%. This value is very close to the value of 110 GPa calculated by ab initio calculations, supporting the substitution scenario. The elasticity drop may be understood by screening of the ionic interaction between constituents in HA upon Ta incorporation.

Thermoluminescence response of K{sub 2}Ca{sub 2}(SO{sub 4}){sub 3} nanophosphor Co-doped with Eu and Ce for gamma ray dosimetry

Energy Technology Data Exchange (ETDEWEB)

Patil, B. J. [Dept. of Physics, Abasaheb Garware College, Pune-411004 (India); Bhadane, Mahesh S.; Dahiwale, S. S.; Bhoraskar, V. N.; Dhole, S. D., E-mail: sanjay@physics.unipune.ac.in [Department of Physics, University of Pune, Pune 411007 (India); Mandlik, N. T. [Dept. of Physics, Fergusson College, Pune-411004 (India); Kulkarni, M. S. [Radiation Safety Systems Division, Bhabha Atomic Research Centre, Mumbai 400 085 (India); Bhatt, B. C. [Radiological Physics and Advisory Division, Bhabha Atomic Research Centre, Mumbai 400 085 (India)

2015-06-24

K{sub 2}Ca{sub 2}(SO{sub 4}){sub 3} nanophosphors co-doped with Eu and Ce were synthesized by the chemical co-precipitation method. These samples were further annealed at 700 °C structural reformation. The structural and morphological characteristics were studied using XRD and TEM techniques. The particle size calculated from XRD spectra was around 35 nm. The as synthesized sample shows cubic structure annealed at 700 °C. The as synthesized and annealed sample of K{sub 2}Ca{sub 2}(SO{sub 4}){sub 3}: EuCe were irradiated with Co{sup 60} gamma rays for the doses from 2Gy to 1kGy. The TL characteristic sample of co-doped were studied for the dosimetric application by gamma radiation. The TL spectrum of annealed sample has single peaked at 160 °C. The Eu doped sample has a high TL sensitivity than Ce doped sample. But after co-doping with Eu and Ce, TL intensity observed to be decreased. The decrees in TL peak intensity of the phosphor on co-doping of Eu and Ce gives an insight into the emission mechanism of the phosphor which involves energy transfer from Eu to Ce. The TL response of all the samples were found to be linear for the dose from 2 Gy to 1 KGy. Therefore, K{sub 2}Ca{sub 2}(SO{sub 4}){sub 3}: EuCe nanophosphor can be used for the measurement of high dose of gamma radiation.

Surface properties of Co-doped BaFe{sub 2}As{sub 2} thin films deposited on MgO with Fe buffer layer and CaF{sub 2} substrates

Energy Technology Data Exchange (ETDEWEB)

Sobota, R. [Department of Experimental Physics, FMPI, Comenius University, 842 48 Bratislava (Slovakia); Plecenik, T., E-mail: tomas.plecenik@fmph.uniba.sk [Department of Experimental Physics, FMPI, Comenius University, 842 48 Bratislava (Slovakia); Gregor, M.; Truchly, M.; Satrapinskyy, L.; Vidis, M.; Secianska, K. [Department of Experimental Physics, FMPI, Comenius University, 842 48 Bratislava (Slovakia); Kurth, F.; Holzapfel, B.; Iida, K. [Institute for Metallic Materials, IFW Dresden, PO Box 270116, D-01171 Dresden (Germany); Kus, P.; Plecenik, A. [Department of Experimental Physics, FMPI, Comenius University, 842 48 Bratislava (Slovakia)

2014-09-01

Highlights: • Surfaces of Co-doped Ba-122 films on various substrates were studied. • Substrate influences topography and surface conductivity distribution of the films. • Surface conductivity of Co-doped Ba-122 is highly inhomogeneous. • Point contact spectroscopy results can be affected by the surface differences. - Abstract: Surface properties of Co-doped BaFe{sub 2}As{sub 2} (Ba-122) thin films prepared by pulsed laser deposition on MgO with Fe buffer layer and CaF{sub 2} substrates were inspected by atomic force microscopy, scanning spreading resistance microscopy, scanning tunneling microscopy, X-ray photoelectron spectroscopy, auger electron spectroscopy/microscopy and point contact spectroscopy (PCS). Selected PCS spectra were fitted by extended 1D BTK model. The measurements were done on as-received as well as ion beam etched surfaces. Our results show that the substrate is considerably influencing the surface properties of the films, particularly the topography and surface conductivity distribution, what can affect results obtained by surface-sensitive techniques like PCS.

Evaluation of the Antimicrobial Activity of Different Antibiotics Enhanced with Silver-Doped Hydroxyapatite Thin Films

Directory of Open Access Journals (Sweden)

Daniela Predoi

2016-09-01

Full Text Available The inhibitory and antimicrobial effects of silver particles have been known since ancient times. In the last few years, a major health problem has arisen due to pathogenic bacteria resistance to antimicrobial agents. The antibacterial activities of new materials including hydroxyapatite (HAp, silver-doped hydroxyapatite (Ag:HAp and various types of antibiotics such as tetracycline (T-HAp and T-Ag:HAp or ciprofloxacin (C-HAp and C-Ag:HAp have not been studied so far. In this study we reported, for the first time, the preparation and characterization of various thin films based on hydroxyapatite and silver-doped hydroxyapatite combined with tetracycline or ciprofloxacin. The structural and chemical characterization of hydroxyapatite and silver-doped hydroxyapatite thin films has been evaluated by X-ray diffraction (XRD and Fourier transform infrared spectroscopy (FTIR. The morphological studies of the HAp, Ag:HAp, T-HAp, T-Ag:HAp, C-HAp and C-Ag:HAp thin solid films were performed using scanning electron microscopy (SEM. In order to study the chemical composition of the coatings, energy dispersive X-ray analysis (EDX and glow discharge optical emission spectroscopy (GDOES measurements have been used, obtaining information on the distribution of the elements throughout the film. These studies have confirmed the purity of the prepared hydroxyapatite and silver-doped hydroxyapatite thin films obtained from composite targets containing Ca10−xAgx(PO46(OH2 with xAg = 0 (HAp and xAg = 0.2 (Ag:HAp. On the other hand, the major aim of this study was the evaluation of the antibacterial activities of ciprofloxacin and tetracycline in the presence of HAp and Ag:HAp thin layers against Staphylococcus aureus and Escherichia coli strains. The antibacterial activities of ciprofloxacin and tetracycline against Staphylococcus aureus and Escherichia coli test strains increased in the presence of HAp and Ag:HAp thin layers.

Microwave characteristics of sol-gel based Ag-doped (Ba{sub 0.6}Sr{sub 0.4})TiO{sub 3} thin films

Energy Technology Data Exchange (ETDEWEB)

Kim, Kyoung-Tae; Kim, Cheolbok [Department of Electrical and Computer Engineering, University of Florida, Gainesville, FL 32611 (United States); Senior, David E. [Department of Electrical and Computer Engineering, University of Florida, Gainesville, FL 32611 (United States); Department of Electrical and Electronic Engineering, Universidad Tecnológica de Bolívar Cartagena, 130011 Colombia (Colombia); Kim, Dongsu [Packaging Research Center, Korea Electronics Technology Institute, Gyeonggi-do, 463-816 (Korea, Republic of); Yoon, Yong-Kyu, E-mail: ykyoon@ece.ufl.edu [Department of Electrical and Computer Engineering, University of Florida, Gainesville, FL 32611 (United States)

2014-08-28

Dielectric Ba{sub 0.6}Sr{sub 0.4}TiO{sub 3} (BST) thin films with a different concentration of Ag-dopant of 0.5, 1, 1.5, 2, 3, and 5 mol % have been prepared using an alkoxide-based sol-gel method on a Pt(111)/TiO{sub 2}/SiO{sub 2}/Si substrate and their surface morphology and crystallinity have been examined using scanning electron microscopy (SEM) and X-ray diffraction (XRD) analysis, respectively. An on-chip metal-insulator-metal capacitor has been fabricated with the prepared thin film ferroelectric sample. Concentric coplanar electrodes are used for high frequency electrical characterization with a vector network analyzer and a probe station. The SEM images show that increasing Ag doping concentration leads to a decrease in grain size. XRD reveals that the fabricated films show good BST crystallinity for all the concentration while a doping concentration of 5 mol % starts to show an Ag peak, implying a metallic phase. Improved microwave dielectric loss properties of the BST thin films are observed in a low Ag doping level. Especially, BST with an Ag doping concentration of 1 mol % shows the best properties with a dielectric constant of 269.3, a quality factor of 48.1, a tunability at the electric field of 100 kV/cm of 41.2 %, a leakage-current density of 1.045 × 10{sup −7}A/cm{sup 2} at an electric field of 100 kV/cm and a figure of merit (defined by tunability (%) divided by tan δ (%)) of 19.59 under a dc bias voltage of 10 V at 1 GHz. - Highlights: • High quality Ag-doped Ba{sub 0.6}Sr{sub 0.4}TiO{sub 3} (BST) thin films were derived by the sol-gel method. • Doped Ag replaced the A site ions in the ABO{sub 3} type structure. • Doped Ag helped lower leakage current by filling oxygen vacancies, which is a leakage path. • Microwave characteristics of low dielectric loss and good tunability were confirmed. • Great potential is envisioned for low loss tunable microwave applications.

Photocatalytic activity of Fe-doped CaTiO₃ under UV-visible light.

Science.gov (United States)

Yang, He; Han, Chong; Xue, Xiangxin

2014-07-01

The photocatalytic degradation of methylene blue (MB) over Fe-doped CaTiO₃ under UV-visible light was investigated. The as-prepared samples were characterized using X-ray diffraction (XRD), scanning electron microscope (SEM) equipped with an energy dispersive spectrometer (EDS) system, Fourier transform infrared spectra (FT-IR), and UV-visible diffuse reflectance spectroscopy (DRS). The results show that the doping with Fe significantly promoted the light absorption ability of CaTiO₃ in the visible light region. The Fe-doped CaTiO₃ exhibited higher photocatalytic activity than CaTiO₃ for the degradation of MB. However, the photocatalytic activity of the Fe-doped CaTiO₃ was greatly influenced by the calcination temperature during the preparation process. The Fe-doped CaTiO₃ prepared at 500°C exhibited the best photocatalytic activity, with degradation of almost 100% MB (10ppm) under UV-visible light for 180 min. Copyright © 2014. Published by Elsevier B.V.

Effect of La doping on crystalline orientation, microstructure and dielectric properties of PZT thin films

Energy Technology Data Exchange (ETDEWEB)

Xu, Wencai; Li, Qi; Wang, Xing [Dalian Univ. of Technology, Dalian (China). School of Mechanical Engineering; Yin, Zhifu [Jilin Univ., Changchun (China). Faculty of the School of Mechanical Science and Engineering; Zou, Helin [Dalian Univ. of Technology, Dalian (China). Key Lab. for Micro/Nano Systems and Technology

2017-11-01

Lanthanum (La)-modified lead zirconate titanate (PLZT) thin films with doping concentration from 0 to 5 at.-% have been fabricated by sol-gel methods to investigate the effects of La doping on crystalline orientation, microstructure and dielectric properties of the modified films. The characterization of PLZT thin films were performed by X-ray diffractometry (XRD), scanning electron microscopy (SEM) and precision impedance analysis. XRD analysis showed that PLZT films with La doping concentration below 4 at.-% exhibited (100) preferred orientation. SEM results indicated that PLZT films presented dense and columnar microstructures when La doping concentration was less than 3 at.-%, while the others showed columnar microstructures only at the bottom of the cross section. The maximum dielectric constant (1502.59 at 100 Hz) was obtained in a 2 at.-% La-doped film, which increased by 53.9 % compared with undoped film. Without introducing a seed layer, (100) oriented PLZT thin films were prepared by using conventional heat treatment process and adjusting La doping concentration.

Development of thin dosemeters of CaSO4: Dy for beta radiation detection

International Nuclear Information System (INIS)

Campos, L.L.

1987-01-01

Thin pellets of CaSO: Dy (0,20mm) were produced and tested in beta radiation fields. The Thermolumiscent (TL) characteristics studied were sensitivity, reproducibility, lower detection limit, linearity of TL response with absorved dose energy dependence. The results show the usefulness of this thin pellets in beta radiation detection. (Author) [pt

Conducting atomic force microscopy studies on doped CulnO2 thin films for resistive memory device applications

International Nuclear Information System (INIS)

Mehta, B.R.

2009-01-01

Full text: Delafosite thin films have interesting structural, optical and electronic properties due to the highly anisotropic crystal structure and possibility of bipolar conductivity. In this presentation, optical, structural and electrical properties of Sn (n type) and Ca (p type) doped CulnO 2 layers grown by rf magnetron sputtering technique will be discussed. Depending on doping and deposition temperature, these films show nanocolumnar structure with (110) and (006) preferred orientations. The observed decrease in activation energy from 0.9 eV to about 0.10 eV and a large decrease in conductivity from 2.11 x 10 -10 Scm -1 to 1.66 x 10 -1 Scm -1 on Sn doping has been explained due to the change in preferred orientation along with efficient doping. Our results show that crystallite orientation is the most important factor controlling the electrical conduction in delafossite thin films. The anisotropy of electrical conduction along (006) and (110) directions in tin doped samples has been further established using conducting atomic force microscopy (CAFM) measurements. The CAFM measurements shows the presence of nanoconducting region when the current flow direction is aligned along the BO 6 layer and complete absence of conducting regions when the current direction is perpendicular to the film surface. Resistive memory devices based on Sn and Ca doped CulnO 2 films show stable and reproducible 'on' and 'off' states. CAFM measurement on these devices carried out before and after 'forming' show the growth of nanoconducting filaments on the application of a threshold voltage. It is possible to control resistance in the 'on' and 'off' states and magnitude of the forming and switching voltages by controlling the doping concentration and crystallite orientation in CulnO 2 layers

Electrochemical Behavior of TiO2 Nanoparticle Doped WO3 Thin Films

Directory of Open Access Journals (Sweden)

Suvarna R. Bathe

2014-01-01

Full Text Available Nanoparticle TiO2 doped WO3 thin films by pulsed spray pyrolysis technique have been studied on fluorine tin doped (FTO and glass substrate. XRD shows amorphous nature for undoped and anatase phase of TiO2 having (101 plane for nanoparticle TiO2 doped WO3 thin film. SEM shows microfibrous reticulated porous network for WO3 with 600 nm fiber diameter and nanocrystalline having size 40 nm for TiO2 nanoparticle doped WO3 thin film. TiO2 nanoparticle doped WO3 thin film shows ~95% reversibility due to may be attributed to nanocrystalline nature of the film, which helpful for charge insertion and deinsertion process. The diffusion coefficient for TiO2 nanoparticle doped WO3 film is less than undoped WO3.

Zirconium doped TiO{sub 2} thin films deposited by chemical spray pyrolysis

Energy Technology Data Exchange (ETDEWEB)

Juma, A. [Laboratory of Thin Film Chemical Technologies, Department of Materials Science, Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn (Estonia); Department of Physics and Astronomy, Botswana International University of Science and Technology, Private bag 16, Palapye (Botswana); Oja Acik, I., E-mail: ilona.oja@ttu.ee [Laboratory of Thin Film Chemical Technologies, Department of Materials Science, Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn (Estonia); Oluwabi, A.T.; Mere, A. [Laboratory of Thin Film Chemical Technologies, Department of Materials Science, Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn (Estonia); Mikli, V.; Danilson, M. [Chair of Semiconductor Materials Technology, Department of Materials Science, Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn (Estonia); Krunks, M. [Laboratory of Thin Film Chemical Technologies, Department of Materials Science, Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn (Estonia)

2016-11-30

Highlights: • Mean crystallite size of TiO{sub 2}:Zr film decreases with increasing [Zr] in the solution. • Zr doping supresses the anatase to rutile transformation process in TiO{sub 2} films. • Band gap of TiO{sub 2}:Zr film is 3.4 eV irrespective of the annealing temperature. - Abstract: Chemical spray pyrolysis (CSP) is a flexible deposition technique that allows for mixing of the precursor solutions in different proportions suitable for doping thin films. The CSP method was used to dope TiO{sub 2} thin films with Zr by adding zirconium(IV) acetylacetonate into a solution of titanium(IV) isopropoxide in ethanol stabilized by acetylacetone at [Zr]/[Ti] of 0, 5, 10 and 20 at%. The Zr-doped TiO{sub 2} thin films were uniform and homogeneous showing much smaller grains than the undoped TiO{sub 2} films. Zr stabilized the anatase phase to temperatures above 800 °C depending on Zr concentration in the spray solution. The concentration of Zr determined by XPS was 6.4 at% for the thin film deposited from the 20 at% solution. According to AFM studies, Zr doping decreased the root mean square roughness of TiO{sub 2} film from 5.9 to 1.1 nm. An XRD study of samples with the highest Zr amount showed the ZrTiO{sub 4} phase started forming after annealing at 800 °C. The optical band gap for TiO{sub 2} decreased from 3.3 eV to 3.0 eV after annealing at 800 °C but for the TiO{sub 2}:Zr(20) film it remained at 3.4 eV. The dielectric constant increased by more than four times with Zr-doping and this was associated with the change in the bond formations caused by substitution of Ti by Zr in the lattice.

An investigation on the In doping of ZnO thin films by spray pyrolysis

Science.gov (United States)

Mahesh, Devika; Kumar, M. C. Santhosh

2018-04-01

Indium doped zinc oxide (IGZO)thin films are gaining much interest owing to its commercial application as transparent conductive oxide thin films. In the current study thin films indium doped ZnO thin films have been deposited on glass substrates by chemical spray pyrolysis technique with an indium concentration of 1, 2.5 and 4% in Zinc source. The films show a peak shift in the X-Ray Diffraction patterns with varying indium doping concentration. The (101) peak was enhanced for the 2.5 % indium doped films and variation in grain size with the different doping levels was studied. The as-deposited films are uniform and shown high transparency (>90%) in the visible region. Average thicknesses of films are found to be 800nm, calculated using the envelope method. The film with 2.5 % of indium content was found to be highly conducting than the rest, since for the lower and higher concentrations the conductivity was possibly halted by the limit in carrier concentration and indium segregation in the grain boundaries respectively. The enhancement of mobility and carrier concentration was clearly seen in the optimum films.

Luminescence characteristic of YVO{sub 4}:Eu{sup 3+} thin film phosphors by Li doping

Energy Technology Data Exchange (ETDEWEB)

Yang, Hyun Kyoung; Shim, Kyoo Sung; Moon, Byung Kee; Choi, Byung Chun [Department of Physics, Pukyong National University, Busan 608-737, Republic Korea (Korea, Republic of); Jeong, Jung Hyun [Department of Physics, Pukyong National University, Busan 608-737, Republic Korea (Korea, Republic of)], E-mail: jhjeong@pknu.ac.kr; Yi, Soung Soo [Department of Electronic Materials Engineering, Silla University, Busan 608-736, Republic Korea (Korea, Republic of); Kim, Jung Hwan [Department of Physics, Dong Eui University, Busan 614-714, Republic Korea (Korea, Republic of)

2008-06-30

YVO{sub 4}:Eu{sup 3+} and Li-doped YVO{sub 4}:Eu{sup 3+} thin film phosphors have been deposited on Al{sub 2}O{sub 3} (0001) substrate using a pulsed laser deposition technique. The Li{sup +} ions concentration was varied from 0 to 3 wt.% and Li{sup +} doping influenced crystallinity and surface morphology of YVO{sub 4}:Eu{sup 3+} films.. As Li{sup +} content increases from 0 wt.% to 2 wt.%, not only crystallinity was improved, but also the shape of grains was rounded. However, Li{sup +} content, increases further to 3 wt.% the shape of grains was changed to elliptical. The emitted radiation was dominated by a red emission peak at 619 nm radiated from the {sup 5}D{sub 0}-{sup 7}F{sub 2} transition of Eu{sup 3+} ions. In particular, the incorporation of Li{sup +} ions into YVO{sub 4} lattice could induce an increase of photoluminescence. The enhanced luminescence results not only from the improved crystallinity but also from the enhanced surface roughness. The luminescent intensity and surface roughness exhibited similar behavior as a function of Li{sup +} ions concentration.

Specific Effects of Oxygen Molecule and Plasma on Thin-Film Growth of Y-Ba-Cu-O and Bi-Sr-(Ca)-Cu-O Systems

Science.gov (United States)

Endo, Tamio; Horie, Munehiro; Hirate, Naoki; Itoh, Katsutoshi; Yamada, Satoshi; Tada, Masaki; Itoh, Ken-ichi; Sugiyama, Morihiro; Sano, Shinji; Watabe, Kinji

1998-07-01

Thin films of a-oriented YBa2Cu3Ox (YBCO), Ca-doped c-oriented Bi2(Sr,Ca)2CuOx and nondoped c-oriented Bi2Sr2CuOx (Bi2201) were prepared at low temperatures by ion beam sputtering with supply of oxygen molecules or plasma. The plasma enhances crystal growth of the a-YBCO and Ca-doped Bi2201 phases. This can be interpreted in terms of their higher surface energies. The growth and quality of nondoped Bi2201 are improved with the supply of oxygen molecules. This particular result could be interpreted by the collision process between the oxygen molecules and the sputtered particles.

Effect of doping concentration on the conductivity and optical properties of p-type ZnO thin films

Energy Technology Data Exchange (ETDEWEB)

Pathak, Trilok Kumar [Semiconductor Research Lab, Department of Physics, Gurukula Kangri University, Haridwar (India); Kumar, Vinod, E-mail: vinod.phy@gmail.com [Department of Physics, University of the Free State, Bloemfontein (South Africa); Swart, H.C., E-mail: swarthc@ufs.ac.za [Department of Physics, University of the Free State, Bloemfontein (South Africa); Purohit, L.P., E-mail: proflppurohitphys@gmail.com [Semiconductor Research Lab, Department of Physics, Gurukula Kangri University, Haridwar (India)

2016-01-01

Nitrogen doped ZnO (NZO) thin films were synthesized on glass substrates by the sol–gel and spin coating method. Zinc acetate dihydrates and ammonium acetate were used as precursors for zinc and nitrogen, respectively. X-ray diffraction study showed that the thin films have a hexagonal wurtzite structure corresponding (002) peak for undoped and doped ZnO thin films. The transmittance of the films was above 80% and the band gap of the film varies from 3.21±0.03 eV for undoped and doped ZnO. The minimum resistivity of NZO thin films was obtained as 0.473 Ω cm for the 4 at% of nitrogen (N) doping with a mobility of 1.995 cm{sup 2}/V s. The NZO thin films showed p-type conductivity at 2 and 3 at% of N doping. The AC conductivity measurements that were carried out in the frequency range 10 kHz to 0.1 MHz showed localized conduction in the NZO thin films. These highly transparent ZnO films can be used as a possible window layer in solar cells.

Advances in the synthesis of new Europium doped CaSO4 phosphors and their thermoluminescence characterization

International Nuclear Information System (INIS)

Bernal, R.; Garcia-Haro, A.R.; Machi, L.; Brown, F.; Perez-Salas, R.; Castano, V.M.; Cruz-Vazquez, C.

2008-01-01

Novel self-agglomerating Eu doped CaSO 4 phosphors were synthesized by a cheap, easy, and environmental friendly chemical route. Pellet-shaped sintered samples were obtained without any binding material, and exposed to beta particle irradiation. The thermoluminescence (TL) response in the 0.08-2.6 Gy dose range increased linearly as the radiation dose increased. Glow curves exhibit the most intense maximum close to 200 deg. C, and two much less intense maxima at 250 and 330 deg. C when a 5 deg. C/s heating rate is used. No TL peaks shift is observed when dose changes, which is characteristic of first order kinetics TL processes. The whole glow curve displays a remarkable stability under storage at room temperature. The main peak intensity is 2.5 times greater than that of the TLD-100. The method here reported can be used to synthesize CaSO 4 with other dopants

High-Throughput Synthesis and Characterization of Eu Doped Ba xSr2- xSiO4 Thin Film Phosphors.

Science.gov (United States)

Frost, Sara; Guérin, Samuel; Hayden, Brian E; Soulié, Jean-Philippe; Vian, Chris

2018-06-20

High-throughput techniques have been employed for the synthesis and characterization of thin film phosphors of Eu-doped Ba x Sr 2- x SiO 4 . Direct synthesis from evaporation of the constituent elements under a flux of atomic oxygen on a sapphire substrate at 850 °C was used to directly produce thin film libraries (415 nm thickness) of the crystalline orthosilicate phase with the desired compositional variation (0.24 > x > 1.86). The orthosilicate phase could be synthesized as a pure, or predominantly pure, phase. Annealing the as synthesized library in a reducing atmosphere resulted in the reduction of the Eu while retaining the orthosilicate phase, and resulted in a materials thin film library where fluorescence excited by blue light (450 nm) was observable by the naked eye. Parallel screening of the fluorescence from the combinatorial libraries of Eu doped Ba x Sr 2- x SiO 4 has been implemented by imaging the fluorescent radiation over the library using a monochrome digital camera using a series of color filters. Informatics tools have been developed to allow the 1931 CIE color coordinates and the relative quantum efficiencies of the materials library to be rapidly assessed and mapped against composition, crystal structure and phase purity. The range of compositions gave values of CIE x between 0.17 and 0.52 and CIE y between 0.48 and 0.69 with relative efficiencies in the range 2.0 × 10 -4 -7.6 × 10 -4 . Good agreement was obtained between the thin film phosphors and the fluorescence characteristics of a number of corresponding bulk phosphor powders. The thermal quenching of fluorescence in the thin film libraries was also measured in the temperature range 25-130 °C: The phase purity of the thin film was found to significantly influence both the relative quantum efficiency and the thermal quenching of the fluorescence.

Improvement of physical properties of ZnO thin films by tellurium doping

Energy Technology Data Exchange (ETDEWEB)

Sönmezoğlu, Savaş, E-mail: svssonmezoglu@kmu.edu.tr; Akman, Erdi

2014-11-01

Highlights: • We report the synthesis of tellurium-doped zinc oxide (Te–ZnO) thin films using sol–gel method. • Highly c-axis oriented Te-doped ZnO thin films were grown on FTO glasses as substrate. • 1.5% Te-doping ratio could improve the physical properties of ZnO thin films. - Abstract: This investigation addressed the structural, optical and morphological properties of tellurium incorporated zinc oxide (Te–ZnO) thin films. The obtained results indicated that Te-doped ZnO thin films exhibit an enhancement of band gap energy and crystallinity compared with non-doped films. The optical transmission spectra revealed a shift in the absorption edge toward lower wavelengths. X-ray diffraction measurement demonstrated that the film was crystallized in the hexagonal (wurtzite) phase and presented a preferential orientation along the c-axis. The XRD obtained patterns indicate that the crystallite size of the thin films, ranging from 23.9 to 49.1 nm, changed with the Te doping level. The scanning electron microscopy and atomic force microscopy results demonstrated that the grain size and surface roughness of the thin films increased as the Te concentration increased. Most significantly, we demonstrate that it is possible to control the structural, optical and morphological properties of ZnO thin films with the isoelectronic Te-incorporation level.

Phase transition and multicolor luminescence of Eu2+/Mn2+-activated Ca3(PO4)2 phosphors

International Nuclear Information System (INIS)

Li, Kai; Chen, Daqin; Xu, Ju; Zhang, Rui; Yu, Yunlong; Wang, Yuansheng

2014-01-01

Graphical abstract: We have synthesized Eu 2+ doped and Eu 2+ /Mn 2+ co-doped Ca 3 (PO 4 ) 2 phosphors. The emitting color varies from blue to green with increasing of Eu 2+ content for the Eu 2+ -doped phosphor, and the quantum yield of the 0.05Eu 2+ : Ca 2.95 (PO 4 ) 2 sample reaches 56.7%. Interestingly, Mn 2+ co-doping into Eu 2+ : Ca 3 (PO 4 ) 2 leads to its phase transition from orthorhombic to rhombohedral, and subsequently generates tunable multi-color luminescence from green to red via Eu 2+ → Mn 2+ energy transfer. - Highlights: • A series of novel Eu 2+ : Ca 3 (PO 4 ) 2 phosphors were successfully synthesized. • Phase transition of Ca 3 (PO 4 ) 2 from orthorhombic to rhombohedral occurred when Mn 2+ ions were doped. • The phosphors exhibited tunable multi-color luminescence. • The quantum yield of 0.05Eu 2+ : Ca 2.95 (PO 4 ) 2 phosphor can reach 56.7%. • The analyses of phosphors were carried out by many measurements. - Abstract: Intense blue-green-emitting Eu 2+ : Ca 3 (PO 4 ) 2 and tunable multicolor-emitting Eu 2+ /Mn 2+ : Ca 3 (PO 4 ) 2 phosphors are prepared via a solid-state reaction route. Eu 2+ -doped orthorhombic Ca 3 (PO 4 ) 2 phosphor exhibits a broad emission band in the wavelength range of 400–700 nm with a maximum quantum yield of 56.7%, and the emission peak red-shifts gradually from 479 to 520 nm with increase of Eu 2+ doping content. Broad excitation spectrum (250–420 nm) of Eu 2+ : Ca 3 (PO 4 ) 2 matches well with the near-ultraviolet LED chip, indicating its potential applications as tri-color phosphors in white LEDs. Interestingly, Mn 2+ co-doping into Eu 2+ : Ca 3 (PO 4 ) 2 leads to its phase transition from orthorhombic to rhombohedral, and subsequently generates tunable multi-color luminescence from green to red via Eu 2+ → Mn 2+ energy transfer, under 365 nm UV lamp excitation

X-ray photo-emission studies of Cu1-xTlxBa2Ca3Cu4O12-y superconductor thin films

International Nuclear Information System (INIS)

Khan, Nawazish A.; Mumtaz, M.; Ahadian, M.M.; Iraji-zad, Azam

2006-01-01

X-ray photo-emission spectroscopy (XPS) studies of Cu 1-x Tl x Ba 2 Ca 3 Cu 4 O 12-y superconductor thin films have been carried out for understanding the mechanism of superconductivity and to find out the reasons for the increase of zero resistivity critical temperature T c (R = 0) with post-annealing in a nitrogen atmosphere. It is observed from these studies that reduction of charge state of thallium is a source of doping of carriers to the CuO 2 planes. The reduced charge state of thallium (i.e. Tl 1+ ) promotes lower oxygen concentration in the charge reservoir layer, which possibly results in movement of electrons to the conducting CuO 2 planes. The higher density of electrons in the CuO 2 planes optimizes the hole concentration 'n p ' in these planes. The reduced charge state of thallium in the Cu 1-x Tl x Ba 2 O 4-δ charge reservoir layer is also supported by a shift of the Ba 3d 5/2 and Ba 3d 3/2 XPS lines to lower binding energies with post-annealing in nitrogen atmosphere. Moreover, the movement of the valance band spectrum to lower binding energies suggested that the electronic density of states changes in the valance band with the post-annealing in nitrogen, which possibly becomes a source of doping of carriers to the CuO 2 planes. The increased doping of electrons to the CuO 2 planes optimizes the Fermi-vector K F and Fermi-velocity V F of the carriers and increases the T c (R = 0) of final compound

synthesis and optical characterization of acid-doped polyaniline thin

African Journals Online (AJOL)

HOD

SYNTHESIS AND OPTICAL CHARACTERIZATION OF ACID-DOPED. POLYANILINE THIN .... MATERIALS AND METHODS .... Characterization of Se Doped Polyaniline”,Current. Applied ... with Silver Nanoparticles”, Advances in Materials.

In Situ Neutron Diffraction of Rare-Earth Phosphate Proton Conductors Sr/Ca-doped LaPO4 at Elevated Temperatures

Science.gov (United States)

Al-Wahish, Amal; Al-Binni, Usama; Bridges, C. A.; Huq, A.; Bi, Z.; Paranthaman, M. P.; Tang, S.; Kaiser, H.; Mandrus, D.

Acceptor-doped lanthanum orthophosphates are potential candidate electrolytes for proton ceramic fuel cells. We combined neutron powder diffraction (NPD) at elevated temperatures up to 800° C , X-ray powder diffraction (XRD) and scanning electron microscopy (SEM) to investigate the crystal structure, defect structure, thermal stability and surface topography. NPD shows an average bond length distortion in the hydrated samples. We employed Quasi-Elastic Neutron Scattering (QENS) and electrochemical impedance spectroscopy (EIS) to study the proton dynamics of the rare-earth phosphate proton conductors 4.2% Sr/Ca-doped LaPO4. We determined the bulk diffusion and the self-diffusion coefficients. Our results show that QENS and EIS are probing fundamentally different proton diffusion processes. Supported by the U.S. Department of Energy.

P-doped strontium titanate grown using two target pulsed laser deposition for thin film solar cells

Science.gov (United States)

Man, Hamdi

Thin-film solar cells made of Mg-doped SrTiO3 p-type absorbers are promising candidates for clean energy generation. This material shows p-type conductivity and also demonstrates reasonable absorption of light. In addition, p-type SrTiO3 can be deposited as thin films so that the cost can be lower than the competing methods. In this work, Mg-doped SrTiO3 (STO) thin-films were synthesized and analyzed in order to observe their potential to be employed as the base semiconductor in photovoltaic applications. Mg-doped STO thin-films were grown by using pulsed laser deposition (PLD) using a frequency quadrupled Yttrium Aluminum Garnet (YAG) laser and with a substrate that was heated by back surface absorption of infrared (IR) laser light. The samples were characterized using X-ray photoelectron spectroscopy (XPS) and it was observed that Mg atoms were doped successfully in the stoichiometry. Reflection high energy electron diffraction (RHEED) spectroscopy proved that the thin films were polycrystalline. Kelvin Probe work function measurements indicated that the work function of the films were 4.167 eV after annealing. UV/Vis Reflection spectroscopy showed that Mg-doped STO thin-films do not reflect significantly except in the ultraviolet region of the spectrum where the reflection percentage increased up to 80%. Self-doped STO thin-films, Indium Tin Oxide (ITO) thin films and stainless steel foil (SSF) were studied in order to observe their characteristics before employing them in Mg-doped STO based solar cells. Self-doped STO thin films were grown using PLD and the results showed that they are capable of serving as the n-type semiconductor in solar cell applications with oxygen vacancies in their structure and low reflectivity. Indium Tin Oxide thin-films grown by PLD system showed low 25-50 ?/square sheet resistance and very low reflection features. Finally, commercially available stainless steel foil substrates were excellent substrates for the inexpensive growth of

Synthesis and luminescence characterization of Pr3+ doped Sr1.5Ca0.5SiO4 phosphor

Science.gov (United States)

Vidyadharan, Viji; Mani, Kamal P.; Sajna, M. S.; Joseph, Cyriac; Unnikrishnan, N. V.; Biju, P. R.

2014-12-01

Luminescence properties of Pr3+ activated Sr1.5Ca0.5SiO4 phosphors synthesized by solid state reaction method are reported in this work. Blue, orange red and red emissions were observed in the Pr3+ doped sample under 444 nm excitation and these emissions are assigned as 3P0 → 3H4, 3P0 → 3H6 and 3P0 → 3F4 transitions. The emission intensity shows a maximum corresponding to the 0.5 wt% Pr3+ ion. The decay analysis was done for 0.05 and 0.5 wt% Pr3+ doped samples for the transition 3P0 → 3H6. The life times of 0.05 and 0.5 wt% Pr3+ doped samples were calculated by fitting to exponential and non-exponential curve respectively, and are found to be 156 and 105 μs respectively. The non-exponential behaviour arises due to the statistical distribution of the distances between the ground state Pr3+ ions and excited state Pr3+ ions, which cause the inhomogeneous energy transfer rate. The XRD spectrum confirmed the triclinic phase of the prepared phosphors. The compositions of the samples were determined by the energy dispersive X-ray spectra. From the SEM images it is observed that the particles are agglomerated and are irregularly shaped. IR absorption bands were assigned to different vibrational modes. The well resolved peaks shown in the absorption spectra are identical to the excitation spectra of the phosphor samples. Pr3+ activated Sr1.5Ca0.5SiO4 phosphors can be efficiently excited with 444 nm irradiation and emit multicolour visible emissions. From the CIE diagram it can be seen that the prepared phosphor samples give yellowish-green emission.

Synthesis, characterization of CaF2 doped silicate glass-ceramics.

Science.gov (United States)

Riaz, Madeeha; Zia, Rehana; Mirza, Ambreen; Hussain, Tousif; Bashir, Farooq; Anjum, Safia

2017-06-01

This paper reports the fabrication and characterization of silicate glass-ceramics doped with (0-12mol%) CaF 2 . TGA-DSC analysis was carried out to determine the crystallization temperature and stability of glass measured by two glass parameters; Hruby parameter K H =(T x -T g )/(T L -T x ) and Weinberg parameter K W =(T c -T g )/T L . It was found that with CaF 2 doping improved sinterability at low temperature and provided stability to the glass. The XRD pattern exhibits a single phase of combeite and doping of CaF 2 cause increase in crystallite size. Microstructure of samples was also improved with CaF 2 addition, pores were significantly reduced. After 15days immersion in simulated body fluid all samples developed apatite layer onto its surface. Hence, the addition of CaF 2 provided bioactive glass-ceramic material having a low processing temperature. Copyright © 2017 Elsevier B.V. All rights reserved.

Microstructural and optical properties of Ca and Cr doped cobalt ferrite nanoparticles synthesized by auto combustion

Science.gov (United States)

Agrawal, Shraddha; Parveen, Azra; Azam, Ameer

2018-05-01

The Ca and Cr doped cobalt ferrite nanoparticles (Co0.8Ca0.2) (Fe0.8 Cr0.2)2O4 were synthesized by auto combustion method. Microstructural studies were carried out by X-ray diffraction (XRD). The crystalline size of synthesized nanoparticles as determined by the XRD was found to be 17.6 nm. These structural studies suggest that the crystal system remains spinal even with the doping of calcium and chromium. Optical properties of Ca and Cr doped cobalt ferrite were studied by UV-visible technique in the range of 200-800 nm. The energy band gap was calculated with the help of Tauc relationship. Ca and Cr doped cobalt ferrite annealed at 600°C exhibit significant dispersion in complex permeability. The dielectric constant and dielectric loss of cobalt ferrite were studied as a function of frequency and were explained on the basis of Koop's theory based on Maxwell Wagner two layer models and electron hopping.

Comparison of the photoluminescence properties of Eu2+, Mn2+ co-doped M5(PO4)3Cl (M = Ca, Sr, Ba)

International Nuclear Information System (INIS)

Yang, Fengli; An, Wei; Wei, Heng-Wei; Chen, Guantong; Zhuang, Weidong; Jing, Xi-Ping

2014-01-01

Highlights: • Good size match between the doped and host cations narrows the emission band. • Low phonon energy of the hosts enhances the luminescence intensity. • “Inverse bottleneck effect” related to Eu/Mn lifetime mismatch causes quenching. • “Charge transfer process” in the Eu–Mn clusters causes quenching. -- Abstract: Eu 2+ and Mn 2+ singly doped or co-doped M 5 (PO 4 ) 3 Cl (M = Ca, Sr and Ba) phosphors were synthesized by conventional solid state reactions and characterized by X-ray diffraction (XRD), photoluminescence (PL) spectra, PL decay curves, energy dispersive spectra (EDS) and Raman spectra. The results show that a better size match between the doped cation and the host cation allows a wider solid solution range (e.g. Ca 2+ /Mn 2+ ) and a narrower emission band (e.g. Sr 2+ /Eu 2+ and Ca 2+ /Mn 2+ ). A lower phonon energy of the host (e.g. the Sr phase) reduces the non-radiation probability and enhances the PL efficiency. The PL performance of the Ba phase is exceptional possibly because of the large size difference between the doped cations and the host cations. The transfer efficiency (η) and the emission quantum efficiency (Q) were analyzed. In the studied phosphors, superficially Eu 2+ efficiently transferred its absorbed energy to Mn 2+ but the Q of the Mn 2+ emission was not as high as expected. Two loss mechanisms are proposed: an “inverse bottleneck effect” and “charge transfer” between Eu 2+ and Mn 2+

Synthesis and luminescence properties of Ce{sup 3+} doped MWO{sub 4} (M=Ca, Sr and Ba) microcrystalline phosphors

Energy Technology Data Exchange (ETDEWEB)

Dabre, K.V. [Department of Physics, Arts, Commerce and Science College, Koradi, Nagpur (India); Dhoble, S.J., E-mail: sjdhoble@rediffmail.com [Department of Physics, R.T.M. Nagpur University, Nagpur 440033 (India); Lochab, Jyoti [Radiotherapy Department, Safdarjung Hospital, New Delhi (India)

2014-05-01

The Ce{sup 3+} doped and undoped samples of alkali earth metal tungstate MWO{sub 4} (M=Ca, Sr, and Ba) phosphors are synthesized by a co-precipitation method in controlled pH environment. The resulting phosphors were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), Fourier transform infrared (FTIR), photoluminescence (PL) and thermoluminescence (TL). XRD pattern and SEM micrographs reveal the formation of agglomerated microcrystalline phosphor. FTIR spectra show the strong absorption around 821 cm{sup −1} due to characteristic vibrations of (WO{sub 4}){sup 2−} complex. PL excitation spectra show broadband in the UV region having peak at 280 nm, and the emission spectrum shows broadband in the visible region with peak in the blue region. The PL emission intensity increases with Ce{sup 3+} concentration with the most effective concentration at 5 mol%. The complex TL glow curve of Ce{sup 3+} doped phosphors is deconvoluted by using a TLAnal computer program. The trap parameters obtained by TLAnal were compared with those calculated by Chen's method and a possible model for TL is discussed. - Highlights: • M{sub 1−x}WO{sub 4}:Ce{sub x} (M=Ca, Sr, and Ba) phosphors are synthesized by the co-precipitation method in controlled pH environment. • Phosphor exhibits broad emission band with maximum in the blue region. • Enhancement of PL emission intensity due to doping of Ce in a host lattice. • The complex TL glow curves were deconvoluted by TLAnal. • FTIR spectra show the main transmittance peaks related to v{sub 3} and v{sub 4} vibration modes of W–O bonds.

Synthesis and characterization of Nitrogen-doped &CaCO3-decorated reduced graphene oxide nanocomposite for electrochemical supercapacitors

International Nuclear Information System (INIS)

Ghouri, Zafar Khan; Barakat, Nasser A.M.; Alam, Al-Mahmnur; Alsoufi, Mohammad S.; Bawazeer, Tahani M.; Mohamed, Ahmed F.; Kim, Hak Yong

2015-01-01

Alone, it is expected, and also was experimentally proved, that calcium carbonate and reduced graphene oxide do have negligible specific capacitance due to the chemical composition of both materials. However, synthesis of CaCO 3 on the form of very thin sporadic layer attaching rGO results in dramatic increase in the specific capacitance of the obtained composite due to formation of the electrochemical double layer at the interfacial area. Moreover, the specific capacitance could be further enhanced by nitrogen-doping of the rGO sheets. Typically, a novel N-rGO/CaCO 3 composite has been successfully synthesized by heat reflux strategy with graphite powder, calcium acetate and urea as raw materials.The composite was characterized by X-Ray diffraction (XRD), high resolution transmission electron microscopy (HR-TEM), field-emission scanning electron microscopy (FESEM), coupled with rapid EDAX (energy dispersive analysis of X-Ray) and X-ray photoelectron spectroscopy. The utilized physiochemical characterizations indicated that the final prepared composite can be demonstrated as N-doped rGO decorated by very thin discrete layer from calcium carbonate. Supercapacitive performance of N-rGO/CaCO 3 composite has been investigated by cyclic voltammetry (CV), galvanostatic charge-discharge and electrochemical impedance spectroscopy in 1 M KOH solution. The results reveal that the N-rGO/CaCO 3 composite delivers a large specific capacitance of as high as 214 Fg −1 and 188 Fg −1 at 5 mV s −1 and 1.0 Ag −1 , according to CV and galvanostatic charge-discharge tests, respectively; while the CaCO 3 , rGO, rGO/CaCO 3 , N-rGO based electrodes has a poor electrochemical performance at the same conditions. Moreover, the as-prepared composite exhibited excellent long cycle stability with about 88.7% specific capacitance retained after 10,000 cycles.

Theoretical study of EPR spectra in Cu2+ - and Mn2+ - doped CaCd(CH3COO)4.6H2O

International Nuclear Information System (INIS)

Zhou Yiyang; Zhao Minguang

1987-08-01

The EPR spectra of CaCd(CH 3 COO) 4 .6H 2 O doped with Cu 2+ and Mn 2+ have been studied theoretically. A comparison between the calculated results and the experimental data shows quantitatively that the Cu 2+ and Mn 2+ ions substitute for the Cd 2+ and Ca 2+ ions, respectively. This conclusion is consistent with the qualitative assumption given by previous authors. (author). 36 refs, 1 fig., 3 tabs

Hall effect of K-doped superconducting thin films

Energy Technology Data Exchange (ETDEWEB)

Son, Eunseon; Lee, Nam Hoon; Kang, Won Nam [Dept. of physics, Sungkyunkwan University, Suwon (Korea, Republic of); Hwang, Tae Jong; Kim, Dong Ho [Dept. of physics, Yeungnam University, Gyeongsan(Korea, Republic of)

2013-09-15

We have studied Hall effect for potassium (K)-doped BaFe{sub 2}As{sub 2}superconducting thin films by analyzing the relation between the longitudinal resistivity (ρ{sub xy}) and the Hall resistivity (ρ{sub xy}). The thin films used in this study were fabricated on Al{sub O3} (000l) substrates by using an ex-situ pulsed laser deposition (PLD) technique under a high-vacuum condition of ∼10{sup -6} Torr. The samples showed the high superconducting transition temperatures (T{sub C}) of ∼40 K. The ρ{sub xx} and ρ{sub xy}the for K-doped BaFeAs{sub 2} thin films were measured by using a physical property measurement system (PPMS) with a temperature sweep (T-sweep) mode at an applied current density of 100 A/cm{sup 2} and at magnetic fields from 0 up to 9 T. We report the T-sweep results of the ρ{sub xx} and the ρ{sub xy} to investigate Hall scaling behavior on the basis of the relation of ρ{sub xy} = A(ρ{sub xy}){sup β}. The ρ{sub xx} values are 3.0 ± 0.2 in the c-axis-oriented K-doped BaFeAs{sub 2} thin films, whereas the thin films with various oriented-directions like a polycrystal showed slightly lower β than that of c-axis-oriented thin films. Interestingly, the β value is decreased with increasing magnetic fields.

Superconductivity induced by doping Rh in CaFe2-xRhxAs2

International Nuclear Information System (INIS)

Qi Yanpeng; Wang Lei; Gao Zhaoshun; Wang Dongliang; Zhang Xianping; Wang Chunlei; Yao Chao; Ma Yanwei

2011-01-01

In this paper, we report the synthesis of iron-based superconductors CaFe 2-x Rh x As 2 using a one-step solid state reaction method that crystallizes in the ThCr 2 Si 2 -type structure with a space group I4/mmm. The systematic evolution of the lattice constants demonstrates that the Fe ions are successfully replaced by the Rh. By increasing the doping content of Rh, the spin-density-wave (SDW) transition in the parent compound is suppressed and superconductivity emerges. The maximum superconducting transition temperature is found at 18.5 K with a doping level of x=0.15. The temperature dependence of dc magnetization confirms superconducting transitions at around 15 K. The general phase diagram was obtained and found to be similar to the case of the Rh-doping Sr122 system. Our results explicitly demonstrate the feasibility of inducing superconductivity in Ca122 compounds by higher d-orbital electron doping; however, different Rh-doping effects between FeAs122 compounds and FeAs1111 systems still remains an open question.

Synthesis and characterization of Er3+ doped CaF2 nanoparticles

International Nuclear Information System (INIS)

Zhi Guanglin; Song Jinghong; Mei Bingchu; Zhou Weibing

2011-01-01

Highlights: → Er 3+ :CaF 2 nanoparticles were synthesized by co-precipitation method with particle size of 8-36 nm. → Increasing dopant concentration increases lattice constants and decreases grain size. → Annealing treatment has a remarkable effect on luminescence properties. → Luminescence intensity decrease with the increasing of the dopant concentration. - Abstract: Er 3+ doped CaF 2 nanoparticles were synthesized by a chemical co-precipitation method. Effect of the dopant concentrations on the structure and optical properties of the CaF 2 nanoparticles was investigated. The X-ray powder diffraction and transmission electron microscopy analysis was used to characterize the structure and morphology of the nanoparticles. The nanoparticles with different dopant concentration exhibited a sphere-like morphology with diameters of about 8-36 nm. The incorporation of Er 3+ ions into CaF 2 resulted in the decrease in grain size and deterioration of crystallinity, but enlarged the lattice constants of CaF 2 . Additional annealing treatment at 400 deg. C to the prepared CaF 2 removed the NO 3 - and OH - groups adsorbed on the particles' surfaces, and improved the optical properties of the nanoparticles. The fluorescence intensity, with a maximum at approximately 0.4 mol%, decreased with the increase in doping concentration because of concentration quenching.

Influence of Ag thickness of aluminum-doped ZnO/Ag/aluminum-doped ZnO thin films

Energy Technology Data Exchange (ETDEWEB)

Wu, Hung-Wei, E-mail: hwwu@mail.ksu.edu.tw [Department of Computer and Communication, Kun Shan University, No. 949, Dawan Rd., Yongkang Dist., Tainan City 710, Taiwan (China); Yang, Ru-Yuan [Graduate Institute of Materials Engineering, National Pingtung University of Science and Technology, 1, Shuefu Rd., Neipu, Pingtung City 912, Taiwan (China); Hsiung, Chin-Min; Chu, Chien-Hsun [Department of Mechanical Engineering, National Pingtung University of Science and Technology, 1, Shuefu Rd., Neipu, Pingtung City 912, Taiwan (China)

2012-10-01

Highly conducting aluminum-doped ZnO (30 nm)/Ag (5-15 nm)/aluminum-doped ZnO (30 nm) multilayer thin films were deposited on glass substrate by rf magnetron sputtering (for top/bottom aluminum-doped ZnO films) and e-beam evaporation (for Ag film). The transmittance is more than 70% for wavelengths above 400 nm with the Ag layer thickness of 10 nm. The resistivity is 3.71 Multiplication-Sign 10{sup -4} {Omega}-cm, which can be decreased to 3.8 Multiplication-Sign 10{sup -5} {Omega}-cm with the increase of the Ag layer thickness to 15 nm. The Haacke figure of merit has been calculated for the films with the best value being 8 Multiplication-Sign 10{sup -3} {Omega}{sup -1}. It was shown that the multilayer thin films have potential for applications in optoelectronics. - Highlights: Black-Right-Pointing-Pointer High-quality Al-doped ZnO (AZO)/Ag/AZO Transparent Conducting Oxide films. Black-Right-Pointing-Pointer AZO films (30 nm) made by RF sputtering; E-beam evaporation for Ag film (5-15 nm). Black-Right-Pointing-Pointer Influence of Ag thickness on optical and electrical properties were analyzed. Black-Right-Pointing-Pointer High quality multilayer film with optimal intermediate Ag layer thickness of 10 nm. Black-Right-Pointing-Pointer 3.71 Multiplication-Sign 10{sup -4} {Omega}-cm resistivity, 91.89% transmittance at 470 nm obtained and reproducible.

Sorption properties and reversibility of Ti(IV) and Nb(V)-fluoride doped-Ca(BH{sub 4}){sub 2}-MgH{sub 2} system

Energy Technology Data Exchange (ETDEWEB)

Bonatto Minella, Christian, E-mail: christian.minella@kit.edu [Institute for Metallic Materials, IFW Dresden, Helmholtzstrasse 20, D-01069 Dresden (Germany); Technische Universität Dresden, D-01062 Dresden (Germany); Garroni, Sebastiano [Dipartimento di Chimica e Farmacia, Universitá di Sassari and INSTM, Via Vienna 2, I-07100 Sassari (Italy); Pistidda, Claudio [Institute of Materials Research, Materials Technology, Helmholtz-Zentrum Geesthacht, Zentrum für Material- und Küstenforschung GmbH, Max Planck Str. 1, D-21502 Geesthacht (Germany); Baró, Maria Dolors [Departament de Física, Universitat Autònoma de Barcelona, E-08193 Bellaterra (Spain); Gutfleisch, Oliver [Materials Science, Technische Universität Darmstadt, Alarich-Weiss-Str. 16, 64287 Darmstadt (Germany); Klassen, Thomas; Dornheim, Martin [Institute of Materials Research, Materials Technology, Helmholtz-Zentrum Geesthacht, Zentrum für Material- und Küstenforschung GmbH, Max Planck Str. 1, D-21502 Geesthacht (Germany)

2015-02-15

Highlights: • Faster desorption reaction for doped materials vs. the pure composite system. • Kinetic improvement concerning re-hydrogenation reaction showed by the addition of NbF{sub 5}. • Full characterization of the de-hydrogenation reaction pathway by means of both SR-PXD and {sup 11}B{"1H} MAS-NMR. • Study of the evolution of the chemical state of the additives upon both milling and sorption reactions. - Abstract: In the last decade, alkaline and alkaline earth metal tetrahydroborates have been the focuses of the research due to their high gravimetric and volumetric hydrogen densities. Among them, Ca(BH{sub 4}){sub 2} and the Ca(BH{sub 4}){sub 2} + MgH{sub 2} reactive hydride composites (RHC), were calculated to have the ideal thermodynamic properties which fall within the optimal range for mobile applications. In this study, the addition of NbF{sub 5} or TiF{sub 4} to the Ca(BH{sub 4}){sub 2} + MgH{sub 2} reactive hydride composite system was attempted aiming to obtain a full reversible system with the simultaneous suppression of CaB{sub 12}H{sub 12}. Structural characterization of the specimens was performed by means of in-situ Synchrotron Radiation Powder X-ray diffraction (SR-PXD) and {sup 11}B{"1H} Solid State Magic Angle Spinning-Nuclear Magnetic Resonance (MAS-NMR). The evolution of the chemical state of the Nb- and Ti-based additives was monitored by X-ray Absorption Near Edge Structure (XANES). The addition of NbF{sub 5} or TiF{sub 4} to the Ca(BH{sub 4}){sub 2} + MgH{sub 2} system have not suppressed completely the formation of CaB{sub 12}H{sub 12} and only a slight improvement concerning the reversible reaction was displayed just in the case of Nb-doped composite material.

Spectral properties and laser performances of Yb3+:LaCa4O(BO3)3 crystal with high concentration doping

International Nuclear Information System (INIS)

Ji, Yuexia; Cao, Jiafeng; Xu, Jinlong; You, Zhenyu; Zhu, Zhaojie; Li, Jianfu; Wang, Yan; Tu, Chaoyang

2013-01-01

Highlights: •Yb 3+ :LaCa 4 O(BO 3 ) 3 single crystal was grown with high concentration doping. •Laser potentiality was evaluated based on the spectral and laser parameters. •Continuous wave laser operation was realized. •An output power of 0.77 W and a slope efficiency of 15.71% at 1077 nm were obtained. •The spectra and laser properties of Yb 3+ :LaCa 4 O(BO 3 ) 3 crystal were firstly reported. -- Abstract: High concentration of 15 at.% Yb 3+ doped LaCa 4 O(BO 3 ) 3 (LaCOB) crystal was grown by Czochralski technique. The absorption cross section was conclulated to be 0.63 × 10 −20 cm 2 at 977 nm and the emission cross section to be 0.39 × 10 −20 cm 2 at 1030 nm, with the FWHM of 6.15 and 33 nm respectively. Laser potentiality was evaluated based on the gain cross section σ g , the minimum inversion fraction β min and the minimum pump intensity I min , which were calculated to be 0.18 × 10 −20 cm 2 , 0.05 and 0.47 kw/cm 2 , respectively. Continuous wave laser operation was realized with an output power of 0.77 W and a slope efficiency of 15.71%. The laser emitted around 1077 nm. The radiation trapping and continuous pump mode are contributed to the lasing wavelength for present crystal

Optoelectronic properties of sprayed transparent and conducting indium doped zinc oxide thin films

International Nuclear Information System (INIS)

Shinde, S S; Shinde, P S; Bhosale, C H; Rajpure, K Y

2008-01-01

Indium doped zinc oxide (IZO) thin films are grown onto Corning glass substrates using the spray pyrolysis technique. The effect of doping concentration on the structural, electrical and optical properties of IZO thin films is studied. X-ray diffraction studies show a change in preferential orientation from the (0 0 2) to the (1 0 1) crystal planes with increase in indium doping concentration. Scanning electron microscopy studies show polycrystalline morphology of the films. Based on the Hall-effect measurements and analysis, impurity scattering is found to be the dominant mechanism determining the diminished mobility in ZnO thin films having higher indium concentration. The addition of indium also induces a drastic decrease in the electrical resistivity of films; the lowest resistivity (4.03 x 10 -5 Ω cm) being observed for the film deposited with 3 at% indium doping. The effect of annealing on the film properties has been reported. Films deposited with 3 at% In concentration have relatively low resistivity with 90% transmittance at 550 nm and the highest value of figure of merit 7.9 x 10 -2 □ Ω -1

Ammonia sensing properties of V-doped ZnO:Ca nanopowders prepared by sol–gel synthesis

International Nuclear Information System (INIS)

Fazio, E.; Hjiri, M.; Dhahri, R.; El Mir, L.; Sabatino, G.; Barreca, F.; Neri, F.; Leonardi, S.G.; Pistone, A.; Neri, G.

2015-01-01

V-doped ZnO:Ca nanopowders with different V loading were prepared by sol–gel synthesis and successive drying in ethanol under supercritical conditions. Characterization data of nanopowders annealed at 700 °C in air, revealed that they have the wurtzite structure. Raman features of V-doped ZnO:Ca samples were found to be substantially modified with respect to pure ZnO or binary ZnO:Ca samples, which indicate the substitution of vanadium ions in the ZnO lattice. The ammonia sensing properties of V-doped ZnO:Ca thick films were also investigated. The results obtained demonstrate the possibility of a fine tuning of the sensing characteristics of ZnO-based sensors by Ca and V doping. In particular, their combined effect has brought to an enhanced response towards NH 3 compared to bare ZnO and binary V-ZnO and Ca-ZnO samples. Raman investigation suggested that the presence of Ca play a key role in enhancing the sensor response in these ternary composite nanomaterials. - Graphical abstract: V-doped ZnO:Ca nanopowders prepared by sol–gel synthesis possess enhanced sensing characteristics towards NH 3 compared to bare ZnO. - Highlights: • V-doped ZnO:Ca nanopowders with different V loading were prepared by sol–gel synthesis. • Raman features of V-doped ZnO:Ca samples indicate the substitution of V ions in the ZnO lattice. • Combined effects of dopants have brought to an enhanced response to NH 3 compared to ZnO. • Ca play a key role in enhancing the sensor response of ternary V-doped ZnO:Ca composites

Efficient white organic light-emitting devices using a thin 4,4'-bis(2,2'-diphenylvinyl)-1,1'-diphenyl layer

International Nuclear Information System (INIS)

Wang Jun; Yu Junsheng; Li Lu; Tang Xiaoqing; Jiang Yadong

2008-01-01

White organic light-emitting devices (OLEDs) were fabricated using phosphorescent material bis[2-(4-tert-butylphenyl)benzothiazolato-N,C 2' ]iridium (acetylacetonate) [(t-bt) 2 Ir(acac)] doped in 4,4'-bis(carbazol-9-yl) biphenyl (CBP) matrix as a yellow light-emitting layer and a thin layer 4,4'-bis(2,2'-diphenylvinyl)-1,1'-diphenyl (DPVBi) as the blue light-emitting layer. The light colour of the OLEDs can be adjusted by changing doped concentration and the thickness of the DPVBi thin layer. The maximum luminance and power efficiency of 5% doped device reached 15 460 cd m -2 and 8.1 lm W -1 , respectively. The 3% doped device showed the CIE coordinates of (0.344, 0.322) at 8 V and a maximum power efficiency of 5.7 lm W -1 at 4.5 V

Two different mechanisms on UV emission enhancement in Ag-doped ZnO thin films

International Nuclear Information System (INIS)

Xu, Linhua; Zheng, Gaige; Zhao, Lilong; Pei, Shixin

2015-01-01

Ag-doped ZnO thin films were prepared by a sol–gel method. The structural, morphological and optical properties of the samples were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), UV–vis and photoluminescence spectra. The results show that the Ag in the ZnO thin films annealed at 500 °C for 1 h substitutes for Zn and exists in the form of Ag + ion (Ag Zn ) while the Ag in the ZnO thin films without a post-annealing mainly exists in the form of simple substance (Ag 0 ). The incorporation of Ag indeed can improve the ultraviolet emission of ZnO thin films and suppress the visible emissions at the same time. However, the mechanisms on the ultraviolet emission enhancement in the annealed and unannealed Ag-doped ZnO thin films are very different. As for the post-annealed Ag-doped ZnO thin films, the UV emission enhancement maybe mainly results from more electron–hole pairs (excitons) due to Ag-doping while for the unannealed Ag-doped ZnO thin films; the UV emission enhancement is attributed to the resonant coupling between exciton emission in ZnO and localized surface plasmon in Ag nanoparticles. - Highlights: • Ag-doped ZnO thin films have been prepared by the sol–gel method. • Ag-doping can enhance ultraviolet emission of ZnO thin films and depress the visible emissions at the same time. • There are two different mechanisms on UV emission enhancement in Ag-doped ZnO thin films. • The UV emission enhancement from the resonant coupling between excitonic emissions and localized surface plasmon in Ag nanoparticle is very attractive

Ca-doped LTO using waste eggshells as Ca source to improve the discharge capacity of anode material for lithium-ion battery

Science.gov (United States)

Setiawan, D.; Subhan, A.; Saptari, S. A.

2017-07-01

The necessity of high charge-discharge capacity lithium-ion battery becomes very urgent due to its applications demand. Several researches have been done to meet the demand including Ca doping on Li4Ti5O12 for anode material of lithium-ion batteries. Ca-doped Li4Ti5O12 (LTO) in the form of Li4-xCaxTi5O12 (x = 0, 0.05, 0.075, and 0.1) have been synthesized using simple solid state reaction. The materials preparation involved waste eggshells in the form of CaCO3 as Ca source. The structure and capacity of as-prepared samples were characterized using X-Ray Diffractometer and Cyclic Voltametry. X-Ray Diffractometer characterization revealed that all amount of dopant had entered the lattice structure of LTO successfully. The crystalline sizes were obtained by using Scherrer equation. No significant differences are detected in lattice parameters (˜8.35 Å) and crystalline sizes (˜27 nm) between all samples. Cyclic Voltametry characterization shows that Li4-xCaxTi5O12 (x = 0.05) has highest charge-discharge capacity of 177.14 mAh/g and 181.92 mAh/g, respectively. Redox-potentials of samples show no significant differences with the average of 1.589 V.

Electronic structure of Cr doped Fe3O4 thin films by X-ray absorption near-edge structure spectroscopy

Science.gov (United States)

Chen, Chi-Liang; Dong, Chung-Li; Asokan, Kandasami; Chern, G.; Chang, C. L.

2018-04-01

Present study reports the electronic structures of Cr doped Fe3O4 (Fe3-xCrxO4 (0 ≤ x ≤ 3) grown on MgO (100) substrates in the form of thin films fabricated by a plasma-oxygen assisted Molecular Beam Epitaxy (MBE). X-ray absorption near-edge structure (XANES) spectra at Cr & Fe L-, and O K-edges were used to understand the electronic structure: changes in the bonding nature, valence states, and site occupancies. Cr doping in Fe3O4 results in the change of charge transfer, crystal structure, and selective occupation of ions in octahedral and tetrahedral sites. Such change modifies the electrical and magnetic properties due to the covalency of Cr ions. The physical and chemical properties of ferrites are strongly dependent on the lattice site, ion size of dopant, and magnetic nature present at different structural symmetry of the spinel structure.

Effect of Sr doping on LaTiO3 thin films

International Nuclear Information System (INIS)

Vilquin, B.; Kanki, T.; Yanagida, T.; Tanaka, H.; Kawai, T.

2005-01-01

We report on the electric properties of La 1-x Sr x TiO 3 (0 ≤ x ≤ 0.5) thin films fabricated by pulsed laser deposition method. Crystallographic measurement of the thin films showed the epitaxial c-axis perovskite structure. The electric property of LaTiO 3 thin film, which is a typical Mott insulative material in bulk, showed insulative behaviour, while the Sr-doped films showed metallic conduction suffering electron-electron scattering. Below x = 0.1, the major carrier type was identified to be hole, and switched to electron with further increasing Sr-doping above x = 0.15. In fact, the switching from p-type to n-type for La 1-x Sr x TiO 3 thin films is first demonstrated in this study. The transition suggests that effective Coulomb gap vanishes due to over-additional Sr doping

Photoluminescence of electron beam evaporated CaS:Bi thin films

CERN Document Server

Smet, P F; Poelman, D R; Meirhaeghe, R L V

2003-01-01

For the first time, the photoluminescence (PL) of electron beam evaporated CaS:Bi thin films is reported. Luminescent CaS:Bi powder prepared out of aqueous solutions was used as source material. The influence of substrate temperature on the PL and the morphology of thin films is discussed, and an optimum is determined. Substrate temperatures between 200 deg. C and 300 deg. C lead to good quality thin films with sufficient PL intensity. As-deposited thin films show two emission bands, peaking at 450 and 530 nm. Upon annealing the emission intensity increases, and annealing at 800 deg. C is sufficient to obtain a homogeneously blue emitting thin film (CIE colour coordinates (0.17; 0.12)), thanks to a single remaining emission band at 450 nm. The influence of ambient temperature on the PL of CaS:Bi powder and thin films was also investigated and it was found that CaS:Bi thin films show a favourable thermal quenching behaviour near room temperature.

Effect of doping concentration on the structural, morphological, optical and electrical properties of Mn-doped CdO thin films

Directory of Open Access Journals (Sweden)

Manjula N.

2015-12-01

Full Text Available Thin films of manganese-doped cadmium oxide (CdO:Mn with different Mn-doping levels (0, 1, 2, 3 and 4 at.% were deposited on glass substrates by employing an inexpensive, simplified spray technique using a perfume atomizer at 375 °C. The influence of Mn incorporation on the structural, morphological, optical and electrical properties of CdO films has been studied. All the films exhibit cubic crystal structure with a (1 1 1 preferential orientation. Mn-doping causes a slight shift of the (1 1 1 diffraction peak towards higher angle. The crystallite size of the films is found to decrease from 34.63 nm to 17.68 nm with an increase in Mn doping concentration. The CdO:Mn film coated with 1 at.% Mn exhibit a high transparency of nearly 90 % which decreases for higher doping concentration. The optical band gap decreases with an increase in Mn doping concentration. All the films have electrical resistivity of the order of 10−4 Ω·cm.

Inducing self-assembly of Y2BaCuO5 nanoparticles via Ca-doping for improved pinning in YBa2Cu3O7-x

International Nuclear Information System (INIS)

Barnes, P.N.; Haugan, T.J.; Baca, F.J.; Varanasi, C.V.; Wheeler, R.; Meisenkothen, F.; Sathiraju, S.

2009-01-01

Different mechanisms may exists as a means to provide additional or specialized enhancement of existing nanoparticulate pinning in YBa 2 Cu 3 O 7-x (YBCO) thin films. In the particular case of Y 2 BaCuO 5 (Y211) nanoparticles, Ca-doping of these nanoparticles via addition to the Y211 target material provides an additional increase to the J c (H). YBCO + Y211 samples were created by pulsed laser deposition with alternating targets of YBCO with Y211 and Y211 doped with Ca. Initial indications suggest that this improvement in pinning results from some scattered short-ranged self-assembly of the nanoparticles into short nanocolumns.

Effect of synthesis methods on luminescence properties of LiCaPO{sub 4}:Ce phosphor for radiation dosimetry

Energy Technology Data Exchange (ETDEWEB)

Palan, C.B., E-mail: chetupalan@rediffmail.com; Omanwar, S.K.

2016-10-15

The polycrystalline doped and un-doped LiCaPO{sub 4} phosphors were successfully prepared via solid state diffusion [SSD] and sol–gel [SG] methods. The sol–gel method was implied to decrease the processing time and heating temperature. The prepared un-doped and doped LiCaPO{sub 4} phosphors were characterized through X-ray diffraction (XRD) and scanning electron microscopy (SEM) techniques. Additionally photoluminescence (PL), thermoluminescence (TL) and optically stimulated luminescence (OSL) properties were studied. The XRD patterns of prepared LiCaPO{sub 4} and LiCaPO{sub 4}:Ce phosphors were well matched with the ICDD file. The average particles size of LiCaPO{sub 4} and LiCaPO{sub 4}:Ce phosphors were found to be in the range 2–10 μm by SSD method and 2-5 μm by SG method. The excitation spectra of LiCaPO{sub 4} and LiCaPO{sub 4}:Ce phosphors consist of broad band in the range 200–330 nm and maximum intensity was observed at 314 nm. Also emission spectra consist of broad band in range from 330–500 nm and maximum intensity was observed at 369 nm. With the increase of Ce{sup 3+} ions concentration, the emission spectra of LiCaPO{sub 4}:Ce{sup 3+} phosphors shifted to a longer wavelength. The prepared phosphors were showed excellent TL properties under β irradiation. The OSL sensitivity of the LiCaPO{sub 4}:Ce phosphor synthesized by the SSD method was the nearly same as compared with the OSL sensitivity of LiCaPO{sub 4}:Ce phosphor synthesized by the SG method.

Influence of Nd-Doping on Photocatalytic Properties of TiO2 Nanoparticles and Thin Film Coatings

Directory of Open Access Journals (Sweden)

Damian Wojcieszak

2014-01-01

Full Text Available Structural, optical, and photocatalytic properties of TiO2 and TiO2:Nd nanopowders and thin films composed of those materials have been compared. Titania nanoparticles with 1, 3, and 6 at. % of Nd-dopant were synthesized by sol-gel method. Additionally, thin films with the same material composition were prepared with the aid of spin-coating method. The analysis of structural investigations revealed that all as-prepared nanopowders were nanocrystalline and had TiO2-anatase structure. The average size of crystallites was ca. 4-5 nm and the correlation between the amount of neodymium and the size of TiO2 crystallites was observed. It was shown that the dopant content influenced the agglomeration of the nanoparticles. The results of photocatalytic decomposition of MO showed that doping with Nd (especially in the amount of 3 at. % increased self-cleaning activity of the prepared titania nanopowder. Similar effect was received in case of the thin films, but the decomposition rate was lower due to their smaller active surface area. However, the as-prepared TiO2:Nd photocatalyst in the form of thin films or nanopowders seems to be a very attractive material for various applications.

Resistivity Effects of Cation Ordering in Highly-Doped La2-xSrxCu4 Epitaxial Thin Films

Science.gov (United States)

Burquest, Franklin; Marmol, Rodrigo; Cox, Nicholas; Nelson-Cheeseman, Brittany

Highly-doped La2-xSrxCuO4 (LSCO) films (0.5 causes internal polar electrostatic forces, which have been shown to cause stretching of the apical oxygen bond in analogous epitaxial nickelate films. Thin film samples are grown concurrently to minimize extraneous effects on film structure and properties. Atomic force microscopy and x-ray reflectivity demonstrate that the films are single crystalline, epitaxial, and smooth. X-ray diffraction is used to measure the c-axis of the films as a function of doping and dopant cation ordering. Electrical transport data of the ordered samples is compared with transport data of conventional disordered cation samples. Preliminary data indicates significant differences in resistivity at both 300K and 10K between the cation-ordered and cation-disordered samples. This work indicates that dopant cation ordering within the layered cuprates could significantly modify the conduction mechanisms at play in these materials.

Synthesis and characterization of cobalt doped nickel oxide thin films by spray pyrolysis method

Science.gov (United States)

Sathisha, D.; Naik, K. Gopalakrishna

2018-05-01

Cobalt (Co) doped nickel oxide (NiO) thin films were deposited on glass substrates at a temperature of about 400 °C by spray pyrolysis method. The effect of Co doping concentration on structural, optical and compositional properties of NiO thin films was investigated. X-ray diffraction result shows that the deposited thin films are polycrystalline in nature. Surface morphologies of the deposited thin films were observed by FESEM and AFM. EDS spectra showed the incorporation of Co dopants in NiO thin films. Optical properties of the grown thin films were characterized by UV-visible spectroscopy. It was found that the optical band gap energy and transmittance of the films decrease with increasing Co doping concentration.

Effects of the F4TCNQ-Doped Pentacene Interlayers on Performance Improvement of Top-Contact Pentacene-Based Organic Thin-Film Transistors

OpenAIRE

Ching-Lin Fan; Wei-Chun Lin; Hsiang-Sheng Chang; Yu-Zuo Lin; Bohr-Ran Huang

2016-01-01

In this paper, the top-contact (TC) pentacene-based organic thin-film transistor (OTFT) with a tetrafluorotetracyanoquinodimethane (F4TCNQ)-doped pentacene interlayer between the source/drain electrodes and the pentacene channel layer were fabricated using the co-evaporation method. Compared with a pentacene-based OTFT without an interlayer, OTFTs with an F4TCNQ:pentacene ratio of 1:1 showed considerably improved electrical characteristics. In addition, the dependence of the OTFT performance ...

Injectable Shear-Thinning CaSO4/FGF-18-Incorporated Chitin-PLGA Hydrogel Enhances Bone Regeneration in Mice Cranial Bone Defect Model.

Science.gov (United States)

Sivashanmugam, A; Charoenlarp, Pornkawee; Deepthi, S; Rajendran, Arunkumar; Nair, Shantikumar V; Iseki, Sachiko; Jayakumar, R

2017-12-13

For craniofacial bone regeneration, shear-thinning injectable hydrogels are favored over conventional scaffolds because of their improved defect margin adaptability, easier handling, and ability to be injected manually into deeper tissues. The most accepted method, after autografting, is the use of recombinant human bone morphogenetic protein-2 (BMP-2); however, complications such as interindividual variations, edema, and poor cost-efficiency in supraphysiological doses have been reported. The endogenous synthesis of BMP-2 is desirable, and a molecule which induces this is fibroblast growth factor-18 (FGF-18) because it can upregulate the BMP-2 expression  by supressing noggin. We developed a chitin-poly(lactide-co-glycolide) (PLGA) composite hydrogel by regeneration chemistry and then incorporated CaSO 4 and FGF-18 for this purpose. Rheologically, a 7-fold increase in the elastic modulus was observed in the CaSO 4 -incorporated chitin-PLGA hydrogels as compared to the chitin-PLGA hydrogel. Shear-thinning Herschel-Bulkley fluid nature was observed for both hydrogels. Chitin-PLGA/CaSO 4 gel showed sustained release of FGF-18. In vitro osteogenic differentiation showed an enhanced alkaline phosphatase (ALP) expression in the FGF-18-containing chitin-PLGA/CaSO 4 gel when compared to cells alone. Further, it was confirmed by studying the expression of osteogenic genes [RUNX2, ALP, BMP-2, osteocalcin (OCN), and osteopontin (OPN)], immunofluorescence staining of BMP-2, OCN, and OPN, and alizarin red S staining. Incorporation of FGF-18 in the hydrogel increased the endothelial cell migration. Further, the regeneration potential of the prepared hydrogels was tested in vivo, and longitudinal live animal μ-CT was performed. FGF-18-loaded chitin-PLGA/CaSO 4 showed early and almost complete bone healing in comparison with chitin-PLGA/CaSO 4 , chitin-PLGA/FGF-18, chitin-PLGA, and sham control systems, as confirmed by hematoxylin and eosin and osteoid tetrachrome stainings

Superconductivity in Sm-doped CaFe2As2 single crystals

Science.gov (United States)

Dong-Yun, Chen; Bin-Bin, Ruan; Jia, Yu; Qi, Guo; Xiao-Chuan, Wang; Qing-Ge, Mu; Bo-Jin, Pan; Tong, Liu; Gen-Fu, Chen; Zhi-An, Ren

2016-06-01

In this article, the Sm-doping single crystals Ca1 - x Sm x Fe2As2 (x = 0 ˜ 0.2) were prepared by the CaAs flux method, and followed by a rapid quenching treatment after the high temperature growth. The samples were characterized by structural, resistive, and magnetic measurements. The successful Sm-substitution was revealed by the reduction of the lattice parameter c, due to the smaller ionic radius of Sm3+ than Ca2+. Superconductivity was observed in all samples with onset T c varying from 27 K to 44 K upon Sm-doping. The coexistence of a collapsed phase transition and the superconducting transition was found for the lower Sm-doping samples. Zero resistivity and substantial superconducting volume fraction only happen in higher Sm-doping crystals with the nominal x > 0.10. The doping dependences of the c-axis length and onset T c were summarized. The high-T c observed in these quenched crystals may be attributed to simultaneous tuning of electron carriers doping and strain effect caused by lattice reduction of Sm-substitution. Project supported by the National Natural Science Foundation of China (Grant No. 11474339), the National Basic Research Program of China (Grant Nos. 2010CB923000 and 2011CBA00100), and the Strategic Priority Research Program of the Chinese Academy of Sciences (Grant No. XDB07020100).

Properties of antimony doped ZnO thin films deposited by spray pyrolysis technique

Energy Technology Data Exchange (ETDEWEB)

Sadananda Kumar, N., E-mail: sadanthara@gmail.com; Bangera, Kasturi V.; Shivakumar, G. K. [National Institute of Technology Karnataka, Surathkal, Thin Films Laboratory, Department of Physics (India)

2015-07-15

Antimony (Sb) doped zinc oxide (ZnO) thin films were deposited on the glass substrate at 450°C using spray pyrolysis technique. Effect of Sb doping on surface morphology structural, optical and electrical properties were studied. X-ray diffraction (XRD) analysis showed that both the undoped and doped ZnO thin films are polycrystalline in nature with (101) preferred orientation. SEM analysis showed a change in surface morphology of Sb doped ZnO thin films. Doping results in a marked increase in conductivity without affecting the transmittance of the films. ZnO films prepared with 3 at % Sb shows the lowest resistivity of 0.185 Ohm cm with a Hall mobility of 54.05 cm{sup 2} V{sup –1} s{sup –1}, and a hole concentration of 6.25 × 10{sup 17} cm{sup –3}.

Luminescence properties of Eu2+-doped MAl2-xSixO4-xNx (M = Ca, Sr, Ba) conversion phosphor for white LED applications

NARCIS (Netherlands)

Li, Y.Q.; With, de G.; Hintzen, H.T.J.M.

2006-01-01

Undoped and Eu-doped MAl2-xSixO4-2Nx (M = Ca, Sr, Ba) were synthesized by a solid-state reaction method at 1300 - 1400 ¿C under nitrogen-hydrogen atmosphere. The solubility of (SiN)+, in MAl2O4 was determined. Nitrogen can be incorporated into MAl2O4 by replacement of (AlO)+ by (SiN)+, whose amount

Influence of film thickness on structural, optical, and electrical properties of spray deposited antimony doped SnO{sub 2} thin films

Energy Technology Data Exchange (ETDEWEB)

Yadav, Abhijit A., E-mail: aay_physics@yahoo.co.in

2015-09-30

Transparent conducting antimony doped SnO{sub 2} thin films with varying thickness were deposited by chemical spray pyrolysis technique from non-aqueous solvent Propan-2-ol. The effect of film thickness on the properties of antimony doped SnO{sub 2} thin films have been studied. X-ray diffraction measurements showed tetragonal crystal structure of as-deposited antimony doped SnO{sub 2} films irrespective of film thickness. The surface morphology of antimony doped SnO{sub 2} thin film is spherical with the continuous distribution of grains. Electrical and optical properties were investigated by Hall Effect and optical measurements. The average optical transmittance of films decreased from 89% to 73% within the visible range (350–850 nm) with increase in film thickness. The minimum value of sheet resistance observed is 4.81 Ω/cm{sup 2}. The lowest resistivity found is 3.76 × 10{sup −4} Ω cm at 660 nm film thickness. - Highlights: • Effect of film thickness on the properties of antimony doped SnO{sub 2} thin films • Crystalline size in the range of 34–37 nm • Average transmittance decreased from 89% to 73% in the visible region. • Minimum sheet resistance of 4.81 Ω/cm{sup 2} • Lowest resistivity is found to be 3.76 × 10{sup −4} Ω cm at 660 nm film thickness.

Preparation of textured CaBi4Ti4O15 based ceramics and dielectric properties optimized with La3+ doping

Directory of Open Access Journals (Sweden)

ZHENG Qianqian

2012-12-01

Full Text Available A batch of 001>textured CaBi4Ti4O15(x=0,0.1,0.2,0.3,0.4 (CBLT-x ceramics were fabricated by a two-step sintering method:synthesizing seed-crystal platelets by molten-salt method with oxide mixture as precursor,and then sintering the platelets via grain orientation technique (OCAP.Microstructural characterization by SEM was performed to establish the effect of increased doping of La3+ and sintering temperature on grain growth and texture development.Increasing La3+(to x=0.4 resulted in dielectric constant improvement up to 570 sintered at 1150℃ in the direction perpendicular to the tapecasting plan.The dielectric constant as well as loss of CBLT-x samples in the perpendicular direction is higher than that of parallel plane.The mechanism controlling the texture and grain growth in CBLT-xceramics is firstly discussed by 3D patterns in this letter.

High-temperature stability of thermoelectric Ca₃Co₄O₉ thin films

DEFF Research Database (Denmark)

Brinks, P.; Van Nong, Ngo; Pryds, Nini

2015-01-01

An enhanced thermal stability in thermoelectric Ca3Co4O9 thin films up to 550 °C in an oxygen rich environment was demonstrated by high-temperature electrical and X-ray diffraction measurements. In contrast to generally performed heating in helium gas, it is shown that an oxygen/helium mixture...... provides sufficient thermal contact, while preventing the previously disregarded formation of oxygen vacancies. Combining thermal cycling with electrical measurements proves to be a powerful tool to study the real intrinsic thermoelectric behaviour of oxide thin films at elevated temperatures. © 2015 AIP...

Low temperature synthesis and photoluminescent properties of CaMoO4:Eu3+ red phosphor with uniform micro-assemblies

International Nuclear Information System (INIS)

Yu, Fangyi; Zuo, Jian; Zhao, Zhi; Jiang, Chengying; Yang, Qing

2011-01-01

Highlights: → Synthesis of Eu 3+ -doped CaMoO 4 red phosphor via a facile hydrothermal method. → The morphology of the materials was manipulated using different alkaline sources. → Micro-structures were assembled by small nanostructures. → Luminescent investigations confirmed that the Eu 3+ ions have been effectively doped into the nanostructures. → Schematic diagram for the energy transfer clearly reveals the photoluminescent mechanism. -- Abstract: Scheelite-type Eu 3+ -doped CaMoO 4 red phosphor with uniform micro-assemblies has been successfully synthesized via a facile hydrothermal method at 120 o C for 10 h. The Eu 3+ -doped CaMoO 4 microstructures were assembled by small nanostructures and the morphology of materials was found to be manipulated by dropping different alkalis into the stock solution for the first time. The structure, morphology, and luminescent property were characterized and investigated by techniques of X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), and photoluminescence (PL). The luminescent investigations confirmed that the Eu 3+ ions have been effectively doped into CaMoO 4 nanostructures. The successfully achieved Eu 3+ -doped CaMoO 4 nanostructures will be potential in technological applications on near UV chip-based white light emitting diode (WLED).

Stable proton-conducting Ca-doped LaNbO{sub 4} thin electrolyte-based protonic ceramic membrane fuel cells by in situ screen printing

Energy Technology Data Exchange (ETDEWEB)

Lin Bin [USTC Laboratory for Solid State Chemistry and Inorganic Membranes, Department of Materials Science and Engineering, University of Science and Technology of China (USTC), Hefei, 230026, Anhui (China)], E-mail: bin@mail.ustc.edu.cn; Wang Songlin; Liu Xingqin [USTC Laboratory for Solid State Chemistry and Inorganic Membranes, Department of Materials Science and Engineering, University of Science and Technology of China (USTC), Hefei, 230026, Anhui (China); Meng Guangyao [USTC Laboratory for Solid State Chemistry and Inorganic Membranes, Department of Materials Science and Engineering, University of Science and Technology of China (USTC), Hefei, 230026, Anhui (China)], E-mail: mgym@ustc.edu.cn

2009-06-10

In order to develop a simple and cost-effective route to fabricate protonic ceramic membrane fuel cells (PCMFCs), a stable proton-conducting La{sub 0.99}Ca{sub 0.01}NbO{sub 4} (LCN) thin electrolyte was fabricated on a porous NiO-La{sub 0.5}Ce{sub 0.5}O{sub 1.75} (NiO-LDC) anode by in situ screen printing. The key part of this process is to directly print well-mixed ink of La{sub 2}O{sub 3}, CaCO{sub 3} and Nb{sub 2}O{sub 5} instead of pre-synthesized LCN ceramic powder on the anode substrate. After sintering at 1400 deg. C for 5 h, the full dense electrolyte membrane in the thickness of 20 {mu}m was obtained. A single cell was assembled with (La{sub 0.8}Sr{sub 0.2}){sub 0.9}MnO{sub 3-{delta}}-La{sub 0.5}Ce{sub 0.5}O{sub 1.75} (LSM-LDC) as cathode and tested with humidified hydrogen as fuel and static air as oxidant. The open circuit voltage (OCV) and maximum power density respectively reached 0.98 V and 65 mW cm{sup -2} at 800 deg. C. Interface resistance of cell under open circuit condition was also investigated.

Antimicrobial activity of thin solid films of silver doped hydroxyapatite prepared by sol-gel method.

Science.gov (United States)

Iconaru, Simona Liliana; Chapon, Patrick; Le Coustumer, Philippe; Predoi, Daniela

2014-01-01

In this work, the preparation and characterization of silver doped hydroxyapatite thin films were reported and their antimicrobial activity was characterized. Silver doped hydroxyapatite (Ag:HAp) thin films coatings substrate was prepared on commercially pure Si disks by sol-gel method. The silver doped hydroxyapatite thin films were characterized by various techniques such as Scanning electron microscopy (SEM) with energy Dispersive X-ray attachment (X-EDS), Fourier transform infrared spectroscopy (FT-IR), and glow discharge optical emission spectroscopy (GDOES). These techniques have permitted the structural and chemical characterisation of the silver doped hydroxyapatite thin films. The antimicrobial effect of the Ag:HAp thin films on Escherichia coli and Staphylococcus aureus bacteria was then investigated. This is the first study on the antimicrobial effect of Ag:HAp thin films obtained by sol-gel method. The results of this study have shown that the Ag:HAp thin films with x(Ag) = 0.5 are effective against E. coli and S. aureus after 24 h.

Antimicrobial Activity of Thin Solid Films of Silver Doped Hydroxyapatite Prepared by Sol-Gel Method

Directory of Open Access Journals (Sweden)

Simona Liliana Iconaru

2014-01-01

Full Text Available In this work, the preparation and characterization of silver doped hydroxyapatite thin films were reported and their antimicrobial activity was characterized. Silver doped hydroxyapatite (Ag:HAp thin films coatings substrate was prepared on commercially pure Si disks by sol-gel method. The silver doped hydroxyapatite thin films were characterized by various techniques such as Scanning electron microscopy (SEM with energy Dispersive X-ray attachment (X-EDS, Fourier transform infrared spectroscopy (FT-IR, and glow discharge optical emission spectroscopy (GDOES. These techniques have permitted the structural and chemical characterisation of the silver doped hydroxyapatite thin films. The antimicrobial effect of the Ag:HAp thin films on Escherichia coli and Staphylococcus aureus bacteria was then investigated. This is the first study on the antimicrobial effect of Ag:HAp thin films obtained by sol-gel method. The results of this study have shown that the Ag:HAp thin films with xAg=0.5 are effective against E. coli and S. aureus after 24 h.

Antimicrobial Activity of Thin Solid Films of Silver Doped Hydroxyapatite Prepared by Sol-Gel Method

Science.gov (United States)

Iconaru, Simona Liliana; Chapon, Patrick; Le Coustumer, Philippe; Predoi, Daniela

2014-01-01

In this work, the preparation and characterization of silver doped hydroxyapatite thin films were reported and their antimicrobial activity was characterized. Silver doped hydroxyapatite (Ag:HAp) thin films coatings substrate was prepared on commercially pure Si disks by sol-gel method. The silver doped hydroxyapatite thin films were characterized by various techniques such as Scanning electron microscopy (SEM) with energy Dispersive X-ray attachment (X-EDS), Fourier transform infrared spectroscopy (FT-IR), and glow discharge optical emission spectroscopy (GDOES). These techniques have permitted the structural and chemical characterisation of the silver doped hydroxyapatite thin films. The antimicrobial effect of the Ag:HAp thin films on Escherichia coli and Staphylococcus aureus bacteria was then investigated. This is the first study on the antimicrobial effect of Ag:HAp thin films obtained by sol-gel method. The results of this study have shown that the Ag:HAp thin films with x Ag = 0.5 are effective against E. coli and S. aureus after 24 h. PMID:24523630

Improved electrochromical properties of sol-gel WO3 thin films by doping gold nanocrystals

International Nuclear Information System (INIS)

Naseri, N.; Azimirad, R.; Akhavan, O.; Moshfegh, A.Z.

2010-01-01

In this investigation, the effect of gold nanocrystals on the electrochromical properties of sol-gel Au doped WO 3 thin films has been studied. The Au-WO 3 thin films were dip-coated on both glass and indium tin oxide coated conducting glass substrates with various gold concentrations of 0, 3.2 and 6.4 mol%. Optical properties of the samples were studied by UV-visible spectrophotometry in a range of 300-1100 nm. The optical density spectra of the films showed the formation of gold nanoparticles in the films. The optical bandgap energy of Au-WO 3 films decreased with increasing the Au concentration. Crystalline structure of the doped films was investigated by X-ray diffractometry, which indicated formation of gold nanocrystals in amorphous WO 3 thin films. X-ray photoelectron spectroscopy (XPS) was used to study the surface chemical composition of the samples. XPS analysis indicated the presence of gold in metallic state and the formation of stoichiometric WO 3 . The electrochromic properties of the Au-WO 3 samples were also characterized using lithium-based electrolyte. It was found that doping of Au nanocrystals in WO 3 thin films improved the coloration time of the layer. In addition, it was shown that variation of Au concentration led to color change in the colored state of the Au-WO 3 thin films.

Physical properties and characterization of Ag doped CdS thin films

International Nuclear Information System (INIS)

Shah, N.A.; Nazir, A.; Mahmood, W.; Syed, W.A.A.; Butt, S.; Ali, Z.; Maqsood, A.

2012-01-01

Highlights: ► CdS thin films were grown. ► By ion exchange, Ag was doped. ► Physical properties were investigated. - Abstract: Thin films of cadmium sulfide with very well defined preferential orientation and relatively high absorption coefficient were fabricated by thermal evaporation technique. The research is focused to the fabrication and characterization of the compositional data of CdS thin films obtained by using X-ray diffraction, scanning electron microscope along with energy dispersive X-ray spectroscopy. The optical properties were studied by using a UV-VIS-NIR spectrophotometer. The effects of silver-doping by ion exchange process on the properties of as-deposited CdS thin films have been investigated.

High energy electron irradiation effects on Ga-doped ZnO thin films for optoelectronic space applications

Science.gov (United States)

Serrao, Felcy Jyothi; Sandeep, K. M.; Bhat, Shreesha; Dharmaprakash, S. M.

2018-03-01

Gallium-doped ZnO (GZO) thin films of thickness 394 nm were prepared by a simple, cost-effective sol-gel spin coating method. The effect of 8 MeV electron beam irradiation with different irradiation doses ranging from 0 to 10 kGy on the structural, optical and electrical properties was investigated. Electron irradiation influences the changes in the structural properties and surface morphology of GZO thin films. X-ray diffraction analysis showed that the polycrystalline nature of the GZO films is unaffected by the high energy electron irradiation. The grain size and the surface roughness were found maximum for the GZO film irradiated with 10 kGy electron dosage. The average transmittance of GZO thin films decreased after electron irradiation. The optical band gap of Ga-doped ZnO films was decreased with the increase in the electron dosage. The electrical resistivity of GZO films decreased from 4.83 × 10-3 to 8.725 × 10-4 Ω cm, when the electron dosage was increased from 0 to 10 kGy. The variation in the optical and electrical properties in the Ga-doped ZnO thin films due to electron beam irradiation in the present study is useful in deciding their compatibility in optoelectronic device applications in electron radiation environment.

Electrical Transport and Magnetoresistance Properties of Tensile-Strained CaMnO3 Thin Films

Science.gov (United States)

Ullery, Dustin; Lawson, Bridget; Zimmerman, William; Neubauer, Samuel; Chaudhry, Adeel; Hart, Cacie; Yong, Grace; Smolyaninova, Vera; Kolagani, Rajeswari

We will present our studies of the electrical transport and magnetoresistance properties of tensile strained CaMnO3 thin films. We observe that the resistivity decreases significantly as the film thickness decreases which is opposite to what is observed in thin films of hole doped manganites. The decrease in resistivity is more pronounced in the films on (100) SrTiO3, with resistivity of the thinnest films being about 3 orders of magnitude lower than that of bulk CaMnO3. Structural changes accompanying resistivity changes cannot be fully explained as due to tensile strain, and indicate the presence of oxygen vacancies. These results also suggest a coupling between tensile strain and oxygen deficiency, consistent with predictions from models based on density functional theory calculations. We observe a change in resistance under the application of moderate magnetic field. Experiments are underway to understand the origin of the magnetoresistance and its possible relation to the tensile strain effects. We acknowledge support from: Towson Office of University Undergraduate Research, Fisher Endowment Grant and Undergraduate Research Grants from the Fisher College of Science and Mathematics, and Seed Funding Grant from the School of Emerging technologies.

Magnesium doping on brownmillerite Ca2FeAlO5

International Nuclear Information System (INIS)

Malveiro, J.; Ramos, T.; Ferreira, L.P.; Waerenborgh, J.C.; Nunes, M.R.; Godinho, M.; Carvalho, M.D.

2007-01-01

Ca 2 FeAl 1- x Mg x O 5 (x=0, 0.05 and 0.1) compounds adopting the brownmillerite-type structure were prepared by a self-combustion route using two different fuels. Characterisation was performed using X-ray powder diffraction, Moessbauer spectroscopy, magnetisation measurements, chemical analysis, scanning electron microscopy and 4-point dc conductivity measurements. Global results indicate that the solubility limit was reached for x=0.1. An antiferromagnetic behaviour was detected for all studied compositions, with magnetic ordering temperatures of 340 and 290 K for x=0 and 0.05, respectively. Mg doping increases the number of iron cations in tetrahedral sites, which induces magnetisation enhancement at low temperatures through the coupling between octahedral iron cations in different octahedral planes. The compounds exhibit semiconductor behaviour and Mg 2+ doping yields a significant enhancement of the total conductivity, which can be essentially attributed to the presence of Fe 4+ ions. - Graphical abstract: Ca 2 FeAl 1- x Mg x O 5 (x=0, 0.05, 0.1) compounds with the brownmillerite structure were prepared and characterised. The paramagnetic Moessbauer spectra presented were obtained at T=363 K (x=0); T=297 K (x=0.05) and T=353 K (x=0.1)

Mössbauer and magnetic studies of surfactant mediated Ca-Mg doped ferrihydrite nanoparticles.

Science.gov (United States)

Layek, Samar; Mohapatra, M; Anand, S; Verma, H C

2013-03-01

Ultrafine (2-5 nm) particles of amorphous Ca-Mg co-doped ferrihydrite have been synthesized by surfactant mediated co-precipitation method. The evolution of the amorphous ferrihydrite by Ca-Mg co-doping is quite different from our earlier investigations on individual doping of Ca and Mg. Amorphous phase of ferrihydrite for the present study has been confirmed by X-ray diffraction (XRD) and Mössbauer spectroscopy at room temperature and low temperatures (40 K and 20 K). Hematite nanoparticles with crystallite size about 8, 38 and 70 nm were obtained after annealing the as-prepared samples at 400, 600 and 800 degrees C respectively in air atmosphere. Superparamagnetism has been found in 8 nm sized hematite nanoparticles which has been confirmed from the magnetic hysteresis loop with zero remanent magnetization and coercive field and also from the superparamagnetic doublet of its room temperature Mössbauer spectrum. The magnetic properties of the 38 and 70 nm sized particles have been studied by room temperature magnetic hysteresis loop measurements and Mössbauer spectroscopy. The coercive field in these hematite nanoparticles increases with increasing particle size. Small amount of spinel MgFe2O4 phase has been detected in the 800 degrees C annealed sample.

Optical and electrical properties of transparent conducting B-doped ZnO thin films prepared by various deposition methods

International Nuclear Information System (INIS)

Nomoto, Jun-ichi; Miyata, Toshihiro; Minami, Tadatsugu

2011-01-01

B-doped ZnO (BZO) thin films were prepared with various thicknesses up to about 500 nm on glass substrates at 200 deg. C by dc or rf magnetron sputtering deposition, pulsed laser deposition (PLD), and vacuum arc plasma evaporation (VAPE) methods. Resistivities of 4-6 x 10 -4 Ω cm were obtained in BZO thin films prepared with a B content [B/(B + Zn) atomic ratio] around 1 at. % by PLD and VAPE methods: Hall mobilities above 40 cm 2 /Vs and carrier concentrations on the order of 10 20 cm -3 . All 500-nm-thick-BZO thin films prepared with a resistivity on the order of 10 -3 -10 -4 Ω cm exhibited an averaged transmittance above 80% in the wavelength range of 400-1100 nm. The resistivity in BZO thin films prepared with a thickness below about 500 nm was found to increase over time with exposure to various high humidity environments. In heat-resistance tests, the resistivity stability of BZO thin films was found to be nearly equal to that of Ga-doped ZnO thin films, so these films were judged suitable for use as a transparent electrode for thin-film solar cells.

Novel electrical conductivity properties in Ca-doped BiFeO3 nanoparticles

International Nuclear Information System (INIS)

Wang, X.; Wang, S. Y.; Liu, W. F.; Xi, X. J.; Zhang, H.; Guo, F.; Xu, X. L.; Li, M.; Liu, L.; Zhang, C.; Li, X.; Yang, J. B.

2015-01-01

The charge defective structure in Bi 1−x Ca x FeO 3 (CBFO, x = 0, 0.05, 0.1, 0.15, 0.2, 0.25, 0.3) nanoparticles (NPs) ranging from 140 to 25 nm as well as their relations to band gap and leakage current behavior are investigated. It is demonstrated that Ca doping effectively narrows the band gap from ∼2.16 to ∼2.02 eV, due to the appearance and accumulation of oxygen vacancy. Subsequently, enhanced electrical conductivity was obtained in these CBFO NPs, which leads to the appearance of a distinct threshold switching behavior in Ca-doped BFO NPs with higher conductivity at room temperature. Possible mechanisms for Ca doping effects on the electric conduction were discussed upon the interplay of NPs’ size effect and mobile charged defects on the basis of reduced particle size and the increased density of oxygen vacancy analyzed through X-ray photoelectron spectrum

Improvement of transistor characteristics and stability for solution-processed ultra-thin high-valence niobium doped zinc-tin oxide thin film transistors

Energy Technology Data Exchange (ETDEWEB)

Jeng, Jiann-Shing, E-mail: jsjeng@mail.nutn.edu.tw

2016-08-15

Nb-doped Zinc tin oxide (NZTO) channel materials have been prepared by solution process in combination with the spin-coating method. All NZTO thin film transistors (TFTs) are n-type enhancement-mode devices, either without or with Nb additives. High-valence niobium ion (ionic charge = +5) has a larger ionic potential and similar ionic radius to Zn{sup 2+} and Sn{sup 4+} ions. As compared with the pure ZTO device, introducing Nb{sup 5+} ions into the ZTO channel layers can improve the electrical properties and bias stability of TFTs because of the reduction of the oxygen vacancies. This study discusses the connection among the material properties of the NZTO films and the electrical performance and bias stability of NZTO TFTs and how they are influenced by the Nb/(Nb + Sn) molar ratios of NZTO films. - Highlights: • Ultra-thin high-valence niobium doped zinc-tin oxide (NZTO) thin films are prepared using a solution process. • Nb dopants in ZTO films reduce the oxygen vacancy and subgap adsorption of the ZTO films. • The Nb-doping concentration of the NZTO channel layer has a strong influence on the TFT performance.

Spin-on Bi4Sr3Ca3Cu4O16μ/sub x/ superconducting thin films from citrate precursors

International Nuclear Information System (INIS)

Furcone, S.L.; Chiang, Y.

1988-01-01

Thin films in the Bi-Sr-Ca-Cu-O system have been synthesized from homogeneous liquid citrate precursors by a spin-coating and pyrolysis method. Films prepared on SrTiO 3 substrates of [100] orientation show strongly textured orientations with the c axis of the predominant Bi 4 Sr 3 Ca 3 Cu 4 O 16 μ/sub x/ phase normal to the film plane. In a single coating and firing, crack-free films of 0.2--0.5 μm thickness are obtained. For films fired to peak temperatures of 850--875 0 C, linearly decreasing resistance with temperature is observed, with rho (300 K)∼460 μΩ cm and rho (300 K)rho (100 K)∼2.4. Clear onsets of superconductivity are observed at 90--100 K, with occasional films showing smaller resistant drops at 110--120 K. For all films, T/sub c/ (R = 0) occurs in the range 70--75 K. High critical current densities at 4.2 K of 5--8 x 10 5 Acm 2 are measured by direct transport

Doping dependence of electrical and thermal conductivity of nanoscale polyaniline thin films

Energy Technology Data Exchange (ETDEWEB)

Jin Jiezhu; Wang Qing [Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802 (United States); Haque, M A [Department of Mechanical and Nuclear Engineering, Pennsylvania State University, University Park, PA 16802 (United States)

2010-05-26

We performed simultaneous characterization of electrical and thermal conductivity of 55 nm thick polyaniline (PANI) thin films doped with different levels of camphor sulfonic acids (CSAs). The effect of the doping level is more pronounced on electrical conductivity than on thermal conductivity of PANIs, thereby greatly affecting their ratio that determines the thermoelectric efficiency. At the 60% (the molar ratio of CSA to phenyl-N repeat unit of PANI) doping level, PANI exhibited the maximum electrical and thermal conductivity due to the formation of mostly delocalized structures. Whereas polarons are the charge carriers responsible for the electrical conduction, phonons are believed to play a dominant role in the heat conduction in nanoscale doped PANI thin films.

Luminescence properties and gamma-ray response of the Ce and Ca co-doped (Gd,Y)F3 single crystals

International Nuclear Information System (INIS)

Kamada, Kei; Yanagida, Takayuki; Fujimoto, Yutaka; Fukabori, Akihiro; Yoshikawa, Akira; Nikl, Martin

2011-01-01

The Ca0.5% and Ce1%, 3%, 7%, 10% co-doped Gd 0.5 Y 0.5 F 3 single crystals were grown by the μ-PD method. In the Ca0.5% and Ce3% co-doped sample, Ce 3+ -perturbed luminescence at 380 nm was observed with 32.4 ns photoluminescence decay time. The energy transfer in the sequence of the regular Ce 3+ → (Gd 3+ ) n → the perturbed Ce 3+ sites was evidenced through observation of decay time shortening of the regular Ce 3+ and Gd 3+ centers and the change between the Gd 3+ and Ce 3+ -perturbed emission intensity. The gamma-ray excited scintillation response of the Ca0.5%, Ce7% co-doped Gd 0.5 Y 0.5 F 3 sample was investigated with the help of the pulse height spectra and the light yield, energy resolution and non-proportionality was evaluated in the interval of energies of 59.4-1274 keV.

Magnetotransport of CaCu3Mn4O12 complex perovskite derivatives

International Nuclear Information System (INIS)

Sanchez-Benitez, J.; Andres, A. de; Garcia-Hernandez, M.; Alonso, J.A.; Martinez-Lope, M.J.

2006-01-01

Neutron powder diffraction, magnetic and magnetotransport studies were carried out on new derivatives of the CaCu 3 Mn 4 O 12 (A'A 3 B 4 O 12 ) complex perovskite. The samples were prepared in polycrystalline form under moderate pressure conditions. Substitutions at A and A' sites of CaCu 3 Mn 4 O 12 , with only Mn 4+ and insulating behavior, imply electron doping that affects the magnetic and transport properties. X-ray Absorption Spectroscopy showed that Mn 3+ /Mn 4+ valence mixing occurs only at B site, progressively filling the e g band and providing the metallic character in these compounds, as we observe in most of these samples. A semiconducting behavior is observed in samples with 50% Mn 3+ at B site. This can be understood by the opening of a gap in the conduction band corresponding to the half filling of the e g states. This is the case of the tetravalent rare earth doped samples (Ce and Th at A' site) and of the appropriate A site doped Ca(CuMn 2 )Mn 4 O 12 sample. At the strongly distorted A positions, Mn 3+ , with localized e g electrons, act as magnetic impurities at very low temperatures (<40 K) giving rise to the observed upturn in the resistivity. The magnetic origin of this scattering is evidenced by its drastic reduction under a magnetic field

Neutron investigation of Ru-doped Nd1/2Ca1/2MnO3. Comparison with Cr-doped Nd1/2Ca1/2MnO3

International Nuclear Information System (INIS)

Moritomo, Yutaka; Nonobe, Toshihiko; Machida, Akihiko; Ohoyama, Kenji

2002-01-01

Lattice and magnetic properties are investigated for 3% Ru- and Cr-doped Nd 1/2 Ca 1/2 MnO 3 . The parent Nd 1/2 Ca 1/2 MnO 3 is a charge-ordered insulator (T CO =250K). With decreasing temperature below ≅210K, these compounds are separated into two perovskite phases, that is, the long-c and short-c phases. The long-c region shows a ferromagnetic transition at T C ≅210K for the Ru-doped compound and ≅130K for the Cr-doped compound, while the short-c region shows antiferromagnetic transition at T N ≅150K for Ru and ≅110K for Cr. We discuss the origin of the enhanced T C for the Ru-doped compound in terms of the effective one-electron bandwidth W of the e g -band. (author)

Cellular Response to Doping of High Porosity Foamed Alumina with Ca, P, Mg, and Si

Directory of Open Access Journals (Sweden)

Edwin Soh

2015-03-01

Full Text Available Foamed alumina was previously synthesised by direct foaming of sulphate salt blends varying ammonium mole fraction (AMF, foaming heating rate and sintering temperature. The optimal product was produced with 0.33AMF, foaming at 100 °C/h and sintering at 1600 °C. This product attained high porosity of 94.39%, large average pore size of 300 µm and the highest compressive strength of 384 kPa. To improve bioactivity, doping of porous alumina by soaking in dilute or saturated solutions of Ca, P, Mg, CaP or CaP + Mg was done. Saturated solutions of Ca, P, Mg, CaP and CaP + Mg were made with excess salt in distilled water and decanted. Dilute solutions were made by diluting the 100% solution to 10% concentration. Doping with Si was done using the sol gel method at 100% concentration only. Cell culture was carried out with MG63 osteosarcoma cells. Cellular response to the Si and P doped samples was positive with high cell populations and cell layer formation. The impact of doping with phosphate produced a result not previously reported. The cellular response showed that both Si and P doping improved the biocompatibility of the foamed alumina.

The synthesis and luminescence properties of a novel red-emitting phosphor. Eu{sup 3+}-doped Ca{sub 9}La(PO{sub 4}){sub 7}

Energy Technology Data Exchange (ETDEWEB)

Liang, Zehui [Guangdong University of Technology, Experimental Teaching Department, Guangzhou (China); Guangdong University of Technology, School of Chemical Engineering and Light Industry, Guangzhou (China); Mu, Zhongfei; Zhu, Daoyun [Guangdong University of Technology, Experimental Teaching Department, Guangzhou (China); Wang, Qiang; Wu, Fugen [Guangdong University of Technology, School of Materials and Energy, Guangzhou (China)

2017-10-15

A series of novel red-emitting phosphors Ca{sub 9}La{sub 1-x}(PO{sub 4}){sub 7}: xEu{sup 3+} were synthesized by high-temperature solid state reactions. The photoluminescence excitation and photoluminescence spectra of these phosphors were investigated in detail. O{sup 2-}-Eu{sup 3+} charge transfer band peaking at about 261 nm is dominant in the PLE spectra of Eu{sup 3+}-doped Ca{sub 9}La(PO{sub 4}){sub 7}, indicating that the phosphors are suitable for tricolor fluorescent lamps. The phosphors also show a good absorption in near ultraviolet (around 395 nm) and blue (around 465 nm) spectral region, which indicates that it can be pumped with NUV and blue chips for white light-emitting diodes. The transition of {sup 5}D{sub 0} → {sup 7}F{sub 2} of Eu{sup 3+} in this lattice can emit bright red light. Ca{sub 9}La(PO{sub 4}){sub 7} could accommodate a large amount of Eu{sup 3+} with an optimal concentration of 60 mol%. The dipole-dipole interaction between Eu{sup 3+} is the dominant mechanism for concentration quenching of Eu{sup 3+}. The calculated color coordinates lie in red region (x = 0.64, y = 0.36), which is close to Y{sub 2}O{sub 3}: 0.05Eu{sup 3+} (x = 0.65, y = 0.34). The integral emission intensity of Ca{sub 9}La{sub 0.4}(PO{sub 4}){sub 7}: 0.6Eu{sup 3+} is 1.9 times stronger than that of widely used commercial red phosphor Y{sub 2}O{sub 3}: 0.05Eu{sup 3+}. All these results indicate that Eu{sup 3+}-doped Ca{sub 9}La(PO{sub 4}){sub 7} is a promising red-emitting phosphor which can be used in tricolor fluorescent lamps and white light-emitting diodes. (orig.)

CaSO4: Dy + Teflon thermoluminescent dosemeters

International Nuclear Information System (INIS)

Campos, L.L.

1986-01-01

A pellet dosemeter of CaSO 4 : Dy + Teflon was developed at IPEN. CaSO 4 : Dy thermoluminescent phosphor, grown in the Dosimetric Materials Production Laboratory was chosen, due to its high sensitivity, ease of preparation and comparatively low cost. Pellets were produced by cold pressing and sintering a mixture of CaSO 4 : Dy and Teflon powders. Extensive work was done to study in detail all CaSO 4 : Dy pellets characteristics from the point of view of dosimetry with the purpose of introducing it in the routine use. A filter combination providing an energy independent response from 20 KeV to 1,25 MeV was obtained. The dosemeter consists of three pellets sealed between two thin plastic sheets and placed under plastic and lead filters. The combination of these tree filters allows the exposure as well as the energy determination of an unknown source. (Author) [pt

Characteristic analysis on the physical properties of nanostructured Mg-doped CdO thin films—Doping concentration effect

Directory of Open Access Journals (Sweden)

K. Usharani

2015-06-01

Full Text Available Highly conductive and transparent magnesium-doped cadmium oxide (CdO:Mg thin films have been deposited on suitably cleaned glass substrates maintained at 375 °C by spray pyrolysis technique using perfume atomizer. The magnesium content in the films is varied from 0 to 8 at% in steps of 2 at%. The effect of Mg doping on the structural, morphological, optical and electrical properties of the CdO thin films has been studied. All the films exhibited cubic structure with a preferential orientation along the (1 1 1 plane irrespective of the Mg doping level. SEM analysis showed that the film morphology modifies from spherical shaped grains to closely packed cauliflower shaped nanostructures with Mg doping. Except for the film coated with 2 at% Mg dopant, all the other doped films exhibited a blue shift in the optical band gap. Electrical studies revealed that the CdO:Mg film coated with 8 at% Mg dopant had a minimum resistivity of 0.0853×101 Ω-cm.

Dependences on RE of superconducting properties of transition metal co-doped (Ca, RE)FeAs_2 with RE = La–Gd

International Nuclear Information System (INIS)

Yakita, H.; Ogino, H.; Sala, A.; Okada, T.; Yamamoto, A.; Kishio, K.; Iyo, A.; Eisaki, H.; Shimoyama, J.

2015-01-01

Highlights: • We synthesized Co or Ni co-doped (Ca, RE)FeAs_2 with RE = La–Gd. • Co or Ni co-doping improved superconducting properties of all (Ca, RE)FeAs_2 samples. • T_c of (Ca, RE)FeAs_2 decreased with decreasing ionic radii of RE"3"+. • Eu doped samples showed exceptionally low T_c and long interlayer distance. • Long interlayer distance of Eu doped samples suggested co-existence of Eu"2"+ and Eu"3"+. - Abstract: Dependence of superconducting properties of (Ca, RE)(Fe, TM)As_2 [(Ca, RE)112, TM: Co, Ni)] on RE elements (RE = La–Gd) was systematically investigated. Improvement of superconducting properties by Co or Ni co-doping was observed for all (Ca, RE)112, which is similar to Co-co-doped (Ca, La)112 or (Ca, Pr)112. T_c of Co-co-doped samples decreased from 38 K for RE = La to 29 K for RE = Gd with decreasing ionic radii of RE"3"+. However, Co-co-doped (Ca, Eu)112 showed exceptionally low T_c = 21 K probably due to the co-existence of Eu"3"+ and Eu"2"+ suggested by longer interlayer distance d_F_e_–_F_e of (Ca, Eu)112 than other (Ca, RE)112.

Optical Analysis of Iron-Doped Lead Sulfide Thin Films for Opto-Electronic Applications

Science.gov (United States)

Chidambara Kumar, K. N.; Khadeer Pasha, S. K.; Deshmukh, Kalim; Chidambaram, K.; Shakil Muhammad, G.

Iron-doped lead sulfide thin films were deposited on glass substrates using successive ionic layer adsorption and reaction method (SILAR) at room temperature. The X-ray diffraction pattern of the film shows a well formed crystalline thin film with face-centered cubic structure along the preferential orientation (1 1 1). The lattice constant is determined using Nelson Riley plots. Using X-ray broadening, the crystallite size is determined by Scherrer formula. Morphology of the thin film was studied using a scanning electron microscope. The optical properties of the film were investigated using a UV-vis spectrophotometer. We observed an increase in the optical band gap from 2.45 to 3.03eV after doping iron in the lead sulfide thin film. The cutoff wavelength lies in the visible region, and hence the grown thin films can be used for optoelectronic and sensor applications. The results from the photoluminescence study show the emission at 500-720nm. The vibrating sample magnetometer measurements confirmed that the lead sulfide thin film becomes weakly ferromagnetic material after doping with iron.

Control of retention and fatigue-free characteristics in CaBi4Ti4O15 thin films prepared by chemical method

International Nuclear Information System (INIS)

Simoes, A.Z.; Ramirez, M.A.; Gonzalez, A.H.M.; Riccardi, C.S.; Ries, A.; Longo, E.; Varela, J.A.

2006-01-01

Ferroelectric CaBi 4 Ti 4 O 15 (CBTi144) thin films were deposited on Pt/Ti/SiO 2 /Si substrates by the polymeric precursor method. The films present a single phase of layered-structured perovskite with polar axis orientation after annealing at 700 deg. C for 2 h in static air and oxygen atmosphere. The a/b-axis orientation of the ferroelectric film is considered to be associated with the preferred orientation of the Pt bottom electrode. It is noted that the films annealed in static air showed good polarization fatigue characteristics at least up to 10 10 bipolar pulse cycles and excellent retention properties up to 10 4 s. On the other hand, oxygen atmosphere seems to be crucial in the decrease of both, fatigue and retention characteristics of the capacitors. Independently of the applied electric field, the retained switchable polarization approached a nearly steady-state value after a retention time of 10 s. - Graphical abstract: Fatigue of CBTi144 thin film obtained by polymeric precursor method

Electrical and microstructural properties of CaTiO3-doped K1/2Na1 ...

Indian Academy of Sciences (India)

KNN) and CaTiO3- modified K1/2Na1/2NbO3 (CTO-KNN) systems, were investigated. Discs doped with 0 to 0.55% mol of CaTiO3 (CTO) were sintered at 1125°C for 2 h. Although minority phases were found in doped samples, CaTiO3 was not ...

Synthesis and pressure effects on the La doped CaFe{sub 2}As{sub 2}

Energy Technology Data Exchange (ETDEWEB)

Shin, Soo Hyun; Park, Tuson [Dept. of physics, Sungkyunkwan University, Suwon (Korea, Republic of); Shang, T.; Yuan, H. Q. [Dept. of physics, Zhejiang University, Hangzhou (China)

2014-09-15

We have synthesized La doped CaFe2As{sub 2} single crystals with Sn flux in an evacuated quartz ampule. Doping and pressure effects on the magnetic and superconducting properties of the under-doped Ca{sub 1-x}La{sub x}Fe{sub 2}As{sub 2} (x=0.08, 0.1) were studied by measuring electrical resistivity under quasi-hydrostatic pressure up to 21 kbar. Magnetic transition temperatures for all studied concentrations were sharply suppressed with slight amplitude of pressure, less than 3 kbar, while superconducting transition temperatures were robust against pressure. In this communication, we report temperature-pressure phase diagram for the La-doped CaFe{sub 2}As{sub 2} single crystals.

Preparation of calcium-doped boron nitride by pulsed laser deposition

International Nuclear Information System (INIS)

Anzai, Atsushi; Fuchigami, Masayo; Yamanaka, Shoji; Inumaru, Kei

2012-01-01

Highlights: ► Ca-doped boron nitride was prepared by pulsed laser deposition. ► The films do not have long range order structure in terms of XRD. ► But the films had short-range order structure of h-BN sheets. ► Ca-free films had the same optical band gap as crystalline bulk h-BN (5.8 eV.) ► Ca-doping brought about decreases of the optical band gap by ca. 0.4 eV. -- Abstract: Calcium-doped BN thin films Ca x BN y (x = 0.05–0.1, y = 0.7–0.9) were grown on α-Al 2 O 3 (0 0 1) substrates by pulsed laser deposition (PLD) using h-BN and Ca 3 N 2 disks as the targets under nitrogen radical irradiation. Infrared ATR spectra demonstrated the formation of short range ordered structure of BN hexagonal sheets, while X-ray diffraction gave no peak indicating the absence of long-range order structure in the films. It was notable that Ca-doped film had 5.45–5.55 eV of optical band gap, while the band gap of Ca-free films was 5.80–5.85 eV. This change in the band gap is ascribed to interaction of Ca with the BN sheets; first principle calculations on h-BN structure indicated that variation of inter-plane distance between the BN layers did not affect the band gap. This study highlights that PLD could prepare BN having short-range structure of h-BN sheets and being doped with electropositive cation which varies the optical band gap of the films.

Effects of substrate temperature on structural and electrical properties of SiO2-matrix boron-doped silicon nanocrystal thin films

International Nuclear Information System (INIS)

Huang, Junjun; Zeng, Yuheng; Tan, Ruiqin; Wang, Weiyan; Yang, Ye; Dai, Ning; Song, Weijie

2013-01-01

In this work, silicon-rich SiO 2 (SRSO) thin films were deposited at different substrate temperatures (T s ) and then annealed by rapid thermal annealing to form SiO 2 -matrix boron-doped silicon-nanocrystals (Si-NCs). The effects of T s on the micro-structure and electrical properties of the SiO 2 -matrix boron-doped Si-NC thin films were investigated using Raman spectroscopy and Hall measurements. Results showed that the crystalline fraction and dark conductivity of the SiO 2 -matrix boron-doped Si-NC thin films both increased significantly when the T s was increased from room temperature to 373 K. When the T s was further increased from 373 K to 676 K, the crystalline fraction of 1373 K-annealed thin films decreased from 52.2% to 38.1%, and the dark conductivity reduced from 8 × 10 −3 S/cm to 5.5 × 10 −5 S/cm. The changes in micro-structure and dark conductivity of the SiO 2 -matrix boron-doped Si-NC thin films were most possibly due to the different amount of Si-O 4 bond in the as-deposited SRSO thin films. Our work indicated that there was an optimal T s , which could significantly increase the crystallization and conductivity of Si-NC thin films. Also, it was illumined that the low-resistivity SiO 2 -matrix boron-doped Si-NC thin films can be achieved under the optimal substrate temperatures, T s .

Proteic sol-gel synthesis of copper doped misfit Ca-cobaltites with potential SOFC application

Energy Technology Data Exchange (ETDEWEB)

Lima, Chrystian G.M. [Materials Science and Engineering Postgraduate Program, UFPB, 58051-900, João Pessoa (Brazil); Silva, Rinaldo M. [Department of Chemical Engineering, UFPB, 58051-900, João Pessoa (Brazil); Aquino, Flávia de M. [Alternative and Renewable Energy Center, UFPB, 58051-900, João Pessoa (Brazil); Raveau, Bernard; Caignaert, Vincent [Laboratoire CRISMAT ENSICAEN UMR CNRS 6508, 6 Boulevard du Maréchal Juin, 14050, Caen Cedex 04 (France); Cesário, Moisés R., E-mail: moises.cesario@ensicaen.fr [Laboratoire CRISMAT ENSICAEN UMR CNRS 6508, 6 Boulevard du Maréchal Juin, 14050, Caen Cedex 04 (France); Macedo, Daniel A., E-mail: damaced@gmail.com [Materials Science and Engineering Postgraduate Program, UFPB, 58051-900, João Pessoa (Brazil)

2017-02-01

The present work reports the synthesis, structure and electrochemical assessment of Cu-doped calcium cobaltites as cathode materials for solid oxide fuel cells (SOFCs). Powders of composition Ca{sub 3−x}Cu{sub x}Co{sub 4}O{sub 9−δ} (0 ≤ x ≤ 0.2) were obtained by a proteic sol-gel method which uses gelatin as polymerizing agent. As-prepared materials were calcined at 900 °C for 1 h and characterized by X-ray diffraction, with Rietveld refinement of the diffraction data, and scanning electron microscopy. Screen-printed porous electrodes fired (at 950 °C for 2 h) on both faces of ceria based electrolytes were electrochemically characterized by impedance spectroscopy between 600 and 800 °C in air atmosphere. The results indicated the attainment of Ca{sub 3−x}Cu{sub x}Co{sub 4}O{sub 9−δ} solid solutions with monoclinic misfit layered structure and around 2 vol% Co{sub 3}O{sub 4} as a secondary phase. Micro-plates like powders had irregular shape and average diameter near 2 μm. The area specific resistance (ASR) is in line with literature data for cathodes of similar compositions prepared by other synthetic routes. ASR was optimized for the composition Ca{sub 2.99}Cu{sub 0.01}Co{sub 4}O{sub 9−δ}, achieving 0.84 Ω cm{sup 2} at 800 °C in air. - Highlights: • Proteic sol-gel synthesis of Ca{sub 3−x}Cu{sub x}Co{sub 4}O{sub 9−δ} (0 ≤ x ≤ 0.2). • Cu{sup 2+} doping enhances electrode densification. • Area specific resistance (ASR = 0.84 Ω cm{sup 2} at 800 °C) optimized for Ca{sub 2.99}Cu{sub 0.01}Co{sub 4}O{sub 9−δ}.

The origin of magnetism in transition metal-doped ZrO2 thin films: Experiment and theory

KAUST Repository

Hong, Nguyenhoa

2013-10-04

We have investigated the magnetic properties of Fe/Co/Ni-doped ZrO 2 laser ablated thin films in comparison with the known results of Mn-doped ZrO2, which is thought to be a promising material for spintronics applications. It is found that doping with a transition metal can induce room temperature ferromagnetism in \\'fake\\' diamond. Theoretical analysis based on density functional theory confirms the experimental measurements, by revealing that the magnetic moments of Mn- and Ni-doped ZrO2 thin films are much larger than that of Fe- or Co-doped ZrO2 thin films. Most importantly, our calculations confirm that Mn- and Ni-doped ZrO2 show a ferromagnetic ground state in comparison to Co- and Fe-doped ZrO 2, which favor an antiferromagnetic ground state. © 2013 IOP Publishing Ltd.

Optical and electrical properties of transparent conducting B-doped ZnO thin films prepared by various deposition methods

Energy Technology Data Exchange (ETDEWEB)

Nomoto, Jun-ichi; Miyata, Toshihiro; Minami, Tadatsugu [Optoelectronic Device System R and D Center, Kanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichi, Ishikawa 921-8501 (Japan)

2011-07-15

B-doped ZnO (BZO) thin films were prepared with various thicknesses up to about 500 nm on glass substrates at 200 deg. C by dc or rf magnetron sputtering deposition, pulsed laser deposition (PLD), and vacuum arc plasma evaporation (VAPE) methods. Resistivities of 4-6 x 10{sup -4}{Omega} cm were obtained in BZO thin films prepared with a B content [B/(B + Zn) atomic ratio] around 1 at. % by PLD and VAPE methods: Hall mobilities above 40 cm{sup 2}/Vs and carrier concentrations on the order of 10{sup 20} cm{sup -3}. All 500-nm-thick-BZO thin films prepared with a resistivity on the order of 10{sup -3}-10{sup -4}{Omega} cm exhibited an averaged transmittance above 80% in the wavelength range of 400-1100 nm. The resistivity in BZO thin films prepared with a thickness below about 500 nm was found to increase over time with exposure to various high humidity environments. In heat-resistance tests, the resistivity stability of BZO thin films was found to be nearly equal to that of Ga-doped ZnO thin films, so these films were judged suitable for use as a transparent electrode for thin-film solar cells.

Preparation and properties of KCl-doped Cu2O thin film by electrodeposition

International Nuclear Information System (INIS)

Yu, Xiaojiao; Li, Xinming; Zheng, Gang; Wei, Yuchen; Zhang, Ama; Yao, Binghua

2013-01-01

With the indium tin oxide-coated glass as working electrode, cuprous oxide thin film is fabricated by means of electrodeposition. The effects of KCl doped and annealing treatment upon Cu 2 O thin film morphology, surface resistivity, open-circuit voltage, electric conduction types and visible light response are studied. The research results indicate that KCl doped has a great effect upon Cu 2 O crystal morphology, thus, making Cu 2 O thin film surface resistivity drop, and the open-circuit voltage increase and that electric conduction types are transformed from p type into n type, and the visible light (400–500 nm) absorption rate is slightly reduced. Annealing treatment can obviously decrease Cu 2 O thin film surface resistivity and improve its open-circuit voltage. When KCl concentration in electrolytic solution reaches 7 mmol/L, Cu 2 O thin film morphology can be changed from the dendritic crystal into the cubic crystal and Cu 2 O thin film surface resistivity decreases from the initial 2.5 × 10 6 Ω cm to 8.5 × 10 4 Ω cm. After annealing treatment at 320 °C for 30 min, the surface resistivity decreases to 8.5 × 10 2 Ω cm, and the open-circuit voltage increases from the initial 3.1 mV to 79.2 mV.

Development of new dosemeters of CaSO_4

International Nuclear Information System (INIS)

Santos, Ana Gabryele M. dos; Junot, Danilo O.; Souza, Divanizia N.

2016-01-01

Thermoluminescent dosimeters (TLDs) are widely used in in vivo dosimetry because of their simple production, viability for dose determination in difficult geometries and their reusability. The motivation of this work was to produce CaSO_4 crystals doped with thulium (Tm) and analyze their thermoluminescent (TL) properties. The crystals were produced by a variation of slow evaporation route, and TL curves showed emission peaks centered around 190 ° C and 320 ° C after irradiation with a "9"0Sr /"9"0Y source. Thermoluminescent properties such as linearity, reproducibility and fading were evaluated. The CaSO_4:Tm samples produced proved feasible for dosimetry purposes. (author)

Effect of Er3+ doping on structural, morphological and photocatalytical properties of ZnO thin films

Science.gov (United States)

Bouhouche, S.; Bensouici, F.; Toubane, M.; Azizi, A.; Otmani, A.; Chebout, K.; Kezzoula, F.; Tala-Ighil, R.; Bououdina, M.

2018-05-01

In this research work, structure, microstructure, optical and photocatalytic properties of undoped and Erbium doped nanostructured ZnO thin films prepared by sol-gel dip-coating are investigated. X-ray diffraction (XRD) analysis indicates that the deposited films crystallize within the hexagonal wurtzite-type structure with a preferential growth orientation along (002) plane. Morphological observations using scanning electron microscopy (SEM) reveal important influence of Er concentration; displaying homogeneous and dense aspect for undoped to 0.3% then grid-like morphology for 0.4 and 0.5%. UV/vis/NIR transmittance spectroscopy spectra display a transmittance over 70%, and small variation in the energy gap energy 3.263–3.278 eV. Wettability test of ZnO thin films surface ranges from hydrophilic aspect for pure ZnO to hydrophobic one for Er doped ZnO, and the contact angle is found to increase from 58.7° for pure ZnO up to 98.4° for 0.4% Er doped ZnO. The photocatalytic activity measurements evaluated using the degradation of methylene blue (MB) under UV light irradiation demonstrate that undoped ZnO film shows higher photocatalytic activity compared to Er doped ZnO films, which may be attributed to the deterioration of films’crystallinity resulting in lower transmittance.

Structural and vibrational investigations of Nb-doped TiO2 thin films

International Nuclear Information System (INIS)

Uyanga, E.; Gibaud, A.; Daniel, P.; Sangaa, D.; Sevjidsuren, G.; Altantsog, P.; Beuvier, T.; Lee, Chih Hao; Balagurov, A.M.

2014-01-01

Highlights: • We studied the evolutions of structure for TiO 2 thin film as changes with Nb doping and temperatures. • Up to 800 °C, the grain size of Nb 0.1 Ti 0.9 O 2 is smaller than for pure TiO 2 because doped Nb hinders the growth of the TiO 2 grains. • There was no formation of the rutile phase at high temperature. • Nb doped TiO 2 films have high electron densities at 400–700 °C. • Nb dope extends the absorbance spectra of TiO 2 which leads to the band gap reduce. - Abstract: Acid-catalyzed sol–gel and spin-coating methods were used to prepare Nb-doped TiO 2 thin film. In this work, we studied the effect of niobium doping on the structure, surface, and absorption properties of TiO 2 by energy-dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), X-ray reflectometry (XRR), X-ray photoelectron spectroscopy (XPS), Raman, and UV–vis absorption spectroscopy at various annealing temperatures. EDX spectra show that the Nb:Ti atomic ratios of the niobium-doped titania films are in good agreement with the nominal values (5 and 10%). XPS results suggest that charge compensation is achieved by the formation of Ti vacancies. Specific niobium phases are not observed, thus confirming that niobium is well incorporated into the titania crystal lattice. Thin films are amorphous at room temperature and the formation of anatase phase appeared at an annealing temperature close to 400 °C. The rutile phase was not observed even at 900 °C (XRD and Raman spectroscopy). Grain sizes and electron densities increased when the temperature was raised. Nb-doped films have higher electron densities and lower grain sizes due to niobium doping. Grain size inhibition can be explained by lattice stress induced by the incorporation of larger Nb 5+ ions into the lattice. The band gap energy of indirect transition of the TiO 2 thin films was calculated to be about 3.03 eV. After niobium doping, it decreased to 2.40 eV

Electrical transport characterization of Al and Sn doped Mg 2 Si thin films

KAUST Repository

Zhang, Bo

2017-05-22

Thin-film Mg2Si was deposited using radio frequency (RF) magnetron sputtering. Al and Sn were incorporated as n-type dopants using co-sputtering to tune the thin-film electrical properties. X-ray diffraction (XRD) analysis confirmed that the deposited films are polycrystalline Mg2Si. The Sn and Al doping concentrations were measured using Rutherford backscattering spectroscopy (RBS) and energy dispersive X-ray spectroscopy (EDS). The charge carrier concentration and the charge carrier type of the Mg2Si films were measured using a Hall bar structure. Hall measurements show that as the doping concentration increases, the carrier concentration of the Al-doped films increases, whereas the carrier concentration of the Sn-doped films decreases. Combined with the resistivity measurements, the mobility of the Al-doped Mg2Si films is found to decrease with increasing doping concentration, whereas the mobility of the Sn-doped Mg2Si films is found to increase.

Luminescence in Eu2+ and Ce3+ doped SrCaP2O7 phosphors

Directory of Open Access Journals (Sweden)

K.N. Shinde

Full Text Available Eu2+ and Ce3+ doped SrCaP2O7 has been achieved by modified solid state diffusion in reducing atmosphere. The prepared phosphor powders have been identified by their characteristic X-ray diffraction patterns. The mixed phases of α-Sr2P2O7 type with orthorhombic and α-Ca2P2O7 type with monoclinic form were investigated. Its excitation wavelength ranging from 250 to 430 nm fits well with the characteristic emission of UV light-emitting diode (LED. The excitation and emission spectra indicate that these phosphors can be effectively excited by the near-UV light, and emits blue (visible range due to 4f7 → 4f65d1 transition of Eu2+ particularly, SrCaP2O7: Eu2+ whereas, photoluminescence excitation spectrum measurements of Ce3+ activated SrCaP2O7 shows that the phosphor can be efficiently excited by UV–Vis light from 280 to 310 nm to realize emission in the near visible range due to the 5d–4f transition of Ce3+ ions which is applicable for scintillation purpose. The impacts of doping of divalent europium and trivalent cerium on photoluminescence properties on SrCaP2O7 pyrophosphate phosphors were investigated and I propose a feasible interpretation. Keywords: Phosphor, Luminescence, XRD, LED, FTIR

Luminescence properties of Sm"3"+ doped YPO_4: Effect of solvent, heat-treatment, Ca"2"+/W"6"+-co-doping and its hyperthermia application

International Nuclear Information System (INIS)

Dutta, Dimple P.; Ningthoujam, R. S.; Tyagi, A. K.

2012-01-01

Sm"3"+ doped YPO_4 spherical nanoparticles are prepared by wet chemical route. Pure YPO_4 shows the tetragonal phase, which is stable up to 900 °C, whereas pure SmPO_4 shows the phase transition from hexagonal to monoclinic when heated above 800 °C. The (2-10 at.%) Sm"3"+ doped YPO_4 shows the mixture of phases of tetragonal and hexagonal, which transform to the tetragonal phase above 800 °C. Infra-red study could distinguish confined water in the pore of hexagonal phase from water present on the surface of particles. Luminescence intensities of Sm"3"+ at 564, 601 and 645 nm are weak in case of as-prepared samples because of high non-radiative rate arising from the H_2O molecules present in pores of hexagonal lattice. The intensities increase for samples heated up to 900 °C because of increase of extent of radiative rate. Luminescence lifetime increases with increase of heat-treatment up to 900 °C. When solvent of as-prepared sample was changed from the H_2O to D_2O, 5 times enhancement in luminescence intensity is observed, which can be ascribed to the lower vibration energy of D-O over H-O, which is near to Sm"3"+. When Y"3"+ and P"5"+ ions are substituted by Ca"3"+ and W"3"+ up to 3 at.%, there is an enhancement of luminescence. In order to use them as bio-labeling in drug delivery for hyperthermia applications, hybrid of Fe_3O_4@YPO_4:7Sm is prepared and heating up to 45 °C is observed under AC magnetic field.

Novel electrical conductivity properties in Ca-doped BiFeO{sub 3} nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Wang, X.; Wang, S. Y., E-mail: shouyu.wang@yahoo.com [Tianjin Normal University, College of Physics and Materials Science (China); Liu, W. F., E-mail: wfliu@tju.edu.cn [Tianjin University, Department of Applied Physics, Institute of Advanced Materials Physics, Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, Faculty of Science (China); Xi, X. J. [Tianjin Normal University, College of Physics and Materials Science (China); Zhang, H. [Tianjin University, Department of Applied Physics, Institute of Advanced Materials Physics, Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, Faculty of Science (China); Guo, F. [Tianjin Normal University, College of Physics and Materials Science (China); Xu, X. L. [Tianjin University, Department of Applied Physics, Institute of Advanced Materials Physics, Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, Faculty of Science (China); Li, M.; Liu, L.; Zhang, C.; Li, X.; Yang, J. B. [Tianjin Normal University, College of Physics and Materials Science (China)

2015-05-15

The charge defective structure in Bi{sub 1−x}Ca{sub x}FeO{sub 3} (CBFO, x = 0, 0.05, 0.1, 0.15, 0.2, 0.25, 0.3) nanoparticles (NPs) ranging from 140 to 25 nm as well as their relations to band gap and leakage current behavior are investigated. It is demonstrated that Ca doping effectively narrows the band gap from ∼2.16 to ∼2.02 eV, due to the appearance and accumulation of oxygen vacancy. Subsequently, enhanced electrical conductivity was obtained in these CBFO NPs, which leads to the appearance of a distinct threshold switching behavior in Ca-doped BFO NPs with higher conductivity at room temperature. Possible mechanisms for Ca doping effects on the electric conduction were discussed upon the interplay of NPs’ size effect and mobile charged defects on the basis of reduced particle size and the increased density of oxygen vacancy analyzed through X-ray photoelectron spectrum.

CaSO4:Dy and/or Tm: study of its properties for dosimetry application

International Nuclear Information System (INIS)

Ferreira, M.M.

1979-01-01

In order obtain in practical and cheap solid state dosimeter with high sensitivity, a technique initially developed to cold press a mixture of suitable materials in their powder form sensitive to radiation. The material initially used was natural CaF 2 (fluorite) for this salt was extensively studied in radiation dosimetry since it shows a thermoluminescent (TL) effect after radiation. However, natural calcium fluorite shows two main disadvantages: its high senstivity to room light and the impossibility to control its impurity content due to its natural origin. Calcium sulphate was thus used as a good substitute of fluorite. Rare earths doped calcium sulphate shows a high TL sensitivity and is not disturbed by light. It is also easily obtained in the laboratory under controlled conditions so to get reproducible impurity content. The best dosimeters that can be produced with rare earth doped calcium sulphate are CaSO 4 :Dy and CaSO 4 :Tm. Calcium sulphate, simultaneously doped with Tm and Dy was produced and 100% increase was obtained in the TL sensitivity when compared with the individually are earth doped calcium sulphate. (Author) [pt

Magnetic phase transitions and anomalous transport properties in Ca-doped Eu hexaborides

International Nuclear Information System (INIS)

Rhyee, J. S.; Oh, B. H.; Cho, B. K.

2004-01-01

The temperature- and field-dependent magnetization M(T,H), electrical resistivity ρ(T,H), and Hall resistivity ρ xy (T,H) were measured for single crystals of a series of compounds Eu 1,x Ca x B 6 (x =0.0, 0.2, 0.4, 0.6, and 0.9). The ferromagnetic transition temperature of EuB 6 (T c = 12 K) was suppressed with small doping of Ca for Eu 0.8 Ca 0.2 B 6 (T c = 5.5 K) as evidenced by M(T) and a sharp drop in ρ(T). On the other hand, an antiferromagnetic transition was observed, rather than ferromagnetic transition, for Eu 0.6 Ca 0.4 B 6 (T N = 4.5 K) and Eu 0.4 Ca 0.6 B 6 (T N = 3 K). At the same time, a rapid increase of ρ(T) was found at low temperatures (T ≤ 10 K). The upturn of ρ(T) was suppressed with increasing applied magnetic field. From an analysis of the Hall resistivity ρ xy , the anomalous increase of ρ(T) and its suppression were found to be due to the dramatic variations in the charge carrier density n eff (T,H) and the Hall mobility μ H (T,H).

Defect structure, nonstoichiometry, and phase stability of Ca-doped YCrO3

International Nuclear Information System (INIS)

Carini, G.F. II; Anderson, H.U.; Nasrallah, M.M.; Sparlin, D.M.

1991-01-01

The dependence of the defect structure of Ca-doped YCrO 3 on oxygen activity and temperature was investigated by high temperature thermogravimetric measurements. Defect models developed from electrical conductivity data obtained in a previous study were used to interpret the thermogravimetric data. A correlation was found between the electrical conductivity and the thermogravimetric data which suggested that these data were concomitantly dependent on the acceptor dopant and oxygen vacancy dependence of the thermodynamic parameters. Kroeger-Vink type diagrams showing the regions of stability with respect to oxygen activity and temperature were constructed. The TGA data show that Ca-doped YCrO 3 is even more stable toward reduction than doped LaCrO 3

Fabrication of cerium-doped yttrium aluminum garnet thin films by a mist CVD method

Energy Technology Data Exchange (ETDEWEB)

Murai, Shunsuke, E-mail: murai@dipole7.kuic.kyoto-u.ac.jp; Sato, Takafumi; Yao, Situ; Kamakura, Ryosuke; Fujita, Koji; Tanaka, Katsuhisa

2016-02-15

We synthesized thin films, consisting of yttrium aluminum garnet doped with Ce{sup 3+} (YAG:Ce), using the mist chemical vapor deposition (CVD) method, which allows the fabrication of high-quality thin films under atmospheric conditions without the use of vacuum equipment. Under a deposition rate of approximately 1 μm/h, the obtained thin films had a typical thickness of 2 μm. The XRD analysis indicated that the thin films consisted of single-phase YAG:Ce. The Rutherford backscattering confirmed the stoichiometry; the composition of the film was determined to be (Y, Ce){sub 3}Al{sub 5}O{sub 12}, with a Ce content of Ce/(Y+Ce)=2.5%. The YAG:Ce thin films exhibited fluorescence due to the 5d–4f electronic transitions characteristic of the Ce ions occupying the eight-coordinated dodecahedral sites in the YAG lattice. - Highlights: • We have synthesized thin films of yttrium aluminum garnet doped with Ce{sup 3+} (YAG:Ce) by using a mist chemical vapor deposition (CVD) method for the first time. • The thickness of the single-phase and stoichiometric thin film obtained by 2 h deposition and following heat treatments is 2 μm. • The thin film is porous but optically transparent, and shows yellow fluorescence upon irradiation with a blue light. • Mist-CVD is a green and sustainable technique that allows fabrication of high-quality thin films at atmospheric conditions without vacuum equipment.

Modifying the size and uniformity of upconversion Yb/Er:NaGdF4 nanocrystals through alkaline-earth doping.

Science.gov (United States)

Lei, Lei; Chen, Daqin; Huang, Ping; Xu, Ju; Zhang, Rui; Wang, Yuansheng

2013-11-21

NaGdF4 is regarded as an ideal upconversion (UC) host material for lanthanide (Ln(3+)) activators because of its unique crystal structure, high Ln(3+) solubility, low phonon energy and high photochemical stability, and Ln(3+)-doped NaGdF4 UC nanocrystals (NCs) have been widely investigated as bio-imaging and magnetic resonance imaging agents recently. To realize their practical applications, controlling the size and uniformity of the monodisperse Ln(3+)-doped NaGdF4 UC NCs is highly desired. Unlike the routine routes by finely adjusting the multiple experimental parameters, herein we provide a facile and straightforward strategy to modify the size and uniformity of NaGdF4 NCs via alkaline-earth doping for the first time. With the increase of alkaline-earth doping content, the size of NaGdF4 NCs increases gradually, while the size-uniformity is still retained. We attribute this "focusing" of size distribution to the diffusion controlled growth of NaGdF4 NCs induced by alkaline-earth doping. Importantly, adopting the Ca(2+)-doped Yb/Er:NaGdF4 NCs as cores, the complete Ca/Yb/Er:NaGdF4@NaYF4 core-shell particles with excellent size-uniformity can be easily achieved. However, when taking the Yb/Er:NaGdF4 NCs without Ca(2+) doping as cores, they could not be perfectly covered by NaYF4 shells, and the obtained products are non-uniform in size. As a result, the UC emission intensity of the complete core-shell NCs increases by about 30 times in comparison with that of the cores, owing to the effective surface passivation of the Ca(2+)-doped cores and therefore protection of Er(3+) in the cores from the non-radiative decay caused by surface defects, whereas the UC intensity of the incomplete core-shell NCs is enhanced by only 3 times.

Thermoluminescent analysis of CaSO{sub 4} composites activated with rare earths; Analise termoluminescente de compositos de CaSO{sub 4} ativado com terras raras

Energy Technology Data Exchange (ETDEWEB)

Junot, D.O.; Chagas, M.A.P.; Souza, D.N., E-mail: danilo.junot@hotmail.com, E-mail: mchagasfisica@gmail.com, E-mail: divanizi@ufs.br [Universidade Federal de Sergipe (UFS), Sao Cristovao, SE (Brazil). Departamento de Fisica

2013-07-01

Since the thermoluminescence started to be applied to the dosimetry of ionizing radiation in 1940 different materials detectors have been proposed, and one of the most common is CaSO{sub 4}. The motivation of this work was to produce crystals of CaSO{sub 4} doped with rare earth elements such as europium (Eu), neodymium (Nd) and thulium (Tm). It was also produced crystals of CaSO{sub 4}:Ag. The interest in the production of these materials was to investigate other methods of production of thermoluminescent materials. The results show that the CaSO{sub 4}:Tm is more suitable for use in the thermoluminescent dosimetry. Although not the most intense peak, the peak at 170 °C could be a dosimetric peak. Analyses showed that all samples have a TL response proportional to the dose absorbed. (author)

Direct observation of multivalent states and 4 f →3 d charge transfer in Ce-doped yttrium iron garnet thin films

Science.gov (United States)

Vasili, H. B.; Casals, B.; Cichelero, R.; Macià, F.; Geshev, J.; Gargiani, P.; Valvidares, M.; Herrero-Martin, J.; Pellegrin, E.; Fontcuberta, J.; Herranz, G.

2017-07-01

Due to their large magneto-optic responses, rare-earth-doped yttrium iron garnets, Y3F e5O12 (YIG), are highly regarded for their potential in photonics and magnonics. Here, we consider the case of Ce-doped YIG (Ce-YIG) thin films, in which substitutional C e3 + ions are magnetic because of their 4 f1 ground state. In order to elucidate the impact of Ce substitution on the magnetization of YIG, we have carried out soft x-ray spectroscopy measurements on Ce-YIG films. In particular, we have used the element specificity of x-ray magnetic circular dichroism to extract the individual magnetization curves linked to Ce and Fe ions. Our results show that Ce doping triggers a selective charge transfer from Ce to the Fe tetrahedral sites in the YIG structure. This, in turn, causes a disruption of the electronic and magnetic properties of the parent compound, reducing the exchange coupling between the Ce and Fe magnetic moments and causing atypical magnetic behavior. Our work is relevant for understanding magnetism in rare-earth-doped YIG and, eventually, may enable a quantitative evaluation of the magneto-optical properties of rare-earth incorporation into YIG.

Ag doped (Bi1.6Pb0.4Sr2CaCu2O8+δ textured rods

Directory of Open Access Journals (Sweden)

Díez, J. C.

2008-06-01

Full Text Available In this work, superconducting samples of (Bi1.6Pb0.4Sr2CaCu2O8+δ with Ag additions have been studied. (Bi1.6Pb0.4Sr2CaCu2O8+δ + x wt.% Ag (with x = 0, 1 and 3 powders were synthesized using a sol-gel method. The obtained powders were used as precursors to fabricate long textured cylindrical bars through a floating zone melting method. A drastic change on the microstructure has been found when comparing with undoped Bi2Sr2CaCu2O8+δ samples. The results showed that electrical resistivity at room temperature, critical current as well as flexural strength are improved when Ag is added to these Pb doped samples, while critical temperature does not change. On the other hand, it has been found that samples with composition (Bi1.6Pb0.4Sr2CaCu2O8+δ + Ag shown E-I curves with very high sharpness values on the zone of the superconducting to normal transition, reaching n-values (E∼In as high as 45 at 65K.Se han preparado polvos cerámicos de composición (Bi1.6Pb0.4Sr2CaCu2O8+δ + x % Ag en peso (con x = 0, 1 y 3 mediante un proceso sol-gel. Estos polvos se han utilizado para fabricar precursores que se texturaron por medio del método de fusión zonal flotante. Se ha encontrado un gran cambio en la microestructura cuando se compara con muestras de composición pura Bi2Sr2CaCu2O8+δ. Tanto la resistividad eléctrica a temperatura ambiente, como la corriente crítica, así como la resistencia a flexión se mejoran cuando la Ag se adiciona a estas muestras dopadas con Pb, mientras que no se observa cambio en la temperatura crítica. Por otra parte, se ha encontrado que las muestras de composición (Bi1.6Pb0.4Sr2CaCu2O8+δ + Ag presentan una gran pendiente de la curva E-I en la zona de transición entre el estado superconductor y el estado normal. Con estas composiciones, se han encontrado valores de n (E∼In de hasta 45 a 65K.

Effect of hydrogen doping on the properties of Al and F co-doped ZnO films for thin film silicon solar cell applications

Energy Technology Data Exchange (ETDEWEB)

Wang, Fang-Hsing, E-mail: fansen@dragon.nchu.edu.tw; Yang, Tung-Hsin

2016-04-30

Aluminum and fluorine co-doped zinc oxide (AFZO) thin films were prepared in Ar + H{sub 2} atmospheres by rf magnetron sputtering at room temperature. The structural, electrical, and optical properties of the prepared films were investigated using X-ray diffraction, scanning electron microscopy, atomic force microscopy, Hall-effect measurement, X-ray photoelectron spectroscopy, and ultraviolet–visible spectrometry, and their dependence on deposition atmosphere (i.e. H{sub 2} / (H{sub 2} + Ar) ratio) was studied. The resulting films showed a (0 0 2) diffraction peak, indicating a typical wurtzite structure, and the optimal film crystallinity was obtained with the H{sub 2} / (H{sub 2} + Ar) ratio of 3%. The electrical resistivity of AFZO films decreased to 9.16 × 10{sup −4} Ω-cm, which was lower than ZnO:Al and ZnO:F films due to double doping effect of Al and F. The resistivity further decreased to below 5 × 10{sup −4} Ω-cm for the AFZO film with the H{sub 2} / (H{sub 2} + Ar) ratio of 3%–5%. All the films regardless of hydrogen content displayed high transmittances (> 92%) in the visible wavelength range. Applying the developed AFZO films as front transparent electrodes, amorphous Si thin film solar cells were fabricated and the open-circuit voltage, fill factor, and efficiency of the cell with the hydrogenated AFZO film were improved in contrast to those without the hydrogenated film. - Highlights: • H{sub 2} doping improves optoelectronic properties of Al, F co-doped ZnO (AFZO) films. • Resistivity of AFZO films decreases to 4.4 × 10{sup −4} Ω-cm with the 3% H{sub 2}/(Ar + H{sub 2}) ratio. • AFZO films show high average visible transmittances of above 92%. • Efficiency of a-Si thin film solar cells is improved by AFZO:H as front electrode.

Crystalline and Electronic Structures and Magnetic and Electrical Properties of La-Doped Ca2Fe2O5 Compounds

Science.gov (United States)

Phan, T. L.; Tho, P. T.; Tran, N.; Kim, D. H.; Lee, B. W.; Yang, D. S.; Thiet, D. V.; Cho, S. L.

2018-01-01

Brownmillerite Ca2Fe2O5 has been observed to exhibit many outstanding properties that are applicable to ecotechnology. However, very little work on doped Ca2Fe2O5 compounds has been carried out to widen their application scope. We present herein a detailed study of the crystalline/geometric and electronic structures and magnetic and electrical properties of Ca2- x La x Fe2O5 ( x = 0 to 1) prepared by conventional solid-state reaction. X-ray diffraction patterns indicated that the compounds with x = 0 to 0.05 exhibited brownmillerite-type single phase. La doping with higher content ( x ≥ 0.1) stimulated additive formation of Grenier- (LaCa2Fe3O8) and perovskite-type (LaFeO3) phases. Extended x-ray absorption fine structure spectroscopy at the Fe K-edge and electron spin resonance spectroscopy revealed presence of Fe3+ in the parent Ca2Fe2O5 ( x = 0) and both Fe3+ and Fe4+ in the doped compounds ( x ≥ 0.05). The Fe4+ content tended to increase with increasing x. This stimulates ferromagnetic exchange interactions between Fe3+ and Fe4+ ions and directly influences the magnetic properties of Ca2- x La x Fe2O5. Electrical resistivity ( ρ) measurements in the temperature range of T = 20 K to 400 K revealed that all the compounds exhibit insulator behavior; the ρ( T) data for x ≥ 0.1 could be described based on the adiabatic small polaron hopping model.

Antibacterial effects of silver-doped hydroxyapatite thin films sputter deposited on titanium

International Nuclear Information System (INIS)

Trujillo, Nathan A.; Oldinski, Rachael A.; Ma, Hongyan; Bryers, James D.; Williams, John D.; Popat, Ketul C.

2012-01-01

Since many orthopedic implants fail as a result of loosening, wear, and inflammation caused by repeated loading on the joints, coatings such as hydroxyapatite (HAp) on titanium with a unique topography have been shown to improve the interface between the implant and the natural tissue. Another serious problem with long-term or ideally permanent implants is infection. It is important to prevent initial bacterial colonization as existing colonies have the potential to become encased in an extracellular matrix polymer (biofilm) that is resistant to antibacterial agents. In this study, plasma-based ion implantation was used to examine the effects of pre-etching on plain titanium. Topographical changes to the titanium samples were examined and compared via scanning electron microscopy. Hydroxyapatite and silver-doped hydroxyapatite thin films were then sputter deposited on titanium substrates etched at − 700 eV. For silver-doped films, two concentrations of silver (∼ 0.5 wt.% and ∼ 1.5 wt.%) were used. Silver concentrations in the film were determined using energy dispersive X-ray spectroscopy. Hydroxyapatite film thicknesses were determined by measuring the surface profile using contact profilometry. Staphylococcus epidermidis and Pseudomonas aeruginosa adhesion studies were performed on plain titanium, titanium coated with hydroxyapatite, titanium coated with ∼ 0.5 wt.% silver-doped hydroxyapatite, and titanium coated with ∼ 1.5 wt.% silver-doped hydroxyapatite. Results indicate that less bacteria adhered to surfaces containing hydroxyapatite and silver; further, as the hydroxyapatite films delaminated, silver ions were released which killed bacteria in suspension. - Highlights: ► We have developed a combination of plasma-based ion implantation and ion beam sputter deposition technique. ► Silver-doped hydroxyapatite thin films on titanium were developed. ► The thin films showed the ability to control the concentration of silver that is doped within the

Enhanced Charge Extraction of Li-Doped TiO₂ for Efficient Thermal-Evaporated Sb₂S₃ Thin Film Solar Cells.

Science.gov (United States)

Lan, Chunfeng; Luo, Jingting; Lan, Huabin; Fan, Bo; Peng, Huanxin; Zhao, Jun; Sun, Huibin; Zheng, Zhuanghao; Liang, Guangxing; Fan, Ping

2018-02-28

We provided a new method to improve the efficiency of Sb₂S₃ thin film solar cells. The TiO₂ electron transport layers were doped by lithium to improve their charge extraction properties for the thermal-evaporated Sb₂S₃ solar cells. The Mott-Schottky curves suggested a change of energy band and faster charge transport in the Li-doped TiO₂ films. Compared with the undoped TiO₂, Li-doped mesoporous TiO₂ dramatically improved the photo-voltaic performance of the thermal-evaporated Sb₂S₃ thin film solar cells, with the average power conversion efficiency ( PCE ) increasing from 1.79% to 4.03%, as well as the improved open-voltage ( V oc ), short-circuit current ( J sc ) and fill factors. The best device based on Li-doped TiO₂ achieved a power conversion efficiency up to 4.42% as well as a V oc of 0.645 V, which are the highest values among the reported thermal-evaporated Sb₂S₃ solar cells. This study showed that Li-doping on TiO₂ can effectively enhance the charge extraction properties of electron transport layers, offering a new strategy to improve the efficiency of Sb₂S₃-based solar cells.

Enhanced field emission from Si doped nanocrystalline AlN thin films

International Nuclear Information System (INIS)

Thapa, R.; Saha, B.; Chattopadhyay, K.K.

2009-01-01

Si doped and undoped nanocrystalline aluminum nitride thin films were deposited on various substrates by direct current sputtering technique. X-ray diffraction analysis confirmed the formation of phase pure hexagonal aluminum nitride with a single peak corresponding to (1 0 0) reflection of AlN with lattice constants, a = 0.3114 nm and c = 0.4986 nm. Energy dispersive analysis of X-rays confirmed the presence of Si in the doped AlN films. Atomic force microscopic studies showed that the average particle size of the film prepared at substrate temperature 200 deg. C was 9.5 nm, but when 5 at.% Si was incorporated the average particle size increased to ∼21 nm. Field emission study indicated that, with increasing Si doping concentration, the emission characteristics have been improved. The turn-on field (E to ) was 15.0 (±0.7) V/μm, 8.0 (±0.4) V/μm and 7.8 (±0.5) V/μm for undoped, 3 at.% and 5 at.% Si doped AlN films respectively and the maximum current density of 0.27 μA/cm 2 has been observed for 5 at.% Si doped nanocrystalline AlN film. It was also found that the dielectric properties were highly dependent on Si doping.

Microstructure and enhanced dielectric properties of yttrium and zirconium co-doped CaCu{sub 3}Ti{sub 4}O{sub 12} ceramics

Energy Technology Data Exchange (ETDEWEB)

Xu, Zunping, E-mail: xzp16213@163.com [Faculty of Materials and Energy, Southwest University, Chongqing 400715 (China); Qiang, Hua [College of Electromechanical Engineering, Chongqing College of Humanities, Science and Technology, Chongqing 401524 (China); Chen, Yi; Chen, Zhiqian [Faculty of Materials and Energy, Southwest University, Chongqing 400715 (China)

2017-04-15

CaCu{sub 3}Ti{sub 4}O{sub 12} (CCTO) ceramics doped with Y{sub 2}O{sub 3}, ZrO{sub 2}, and (Y{sub 2}O{sub 3}+ZrO{sub 2}) were prepared by the citrate-nitrate combustion derived powders in order to investigate the effect of dopants on the microstructure and electrical properties. The results showed that giant dielectric response was enhanced by co-doping of Y{sup 3+} and Zr{sup 4+} ions at the Ti site. Y{sub 2}O{sub 3} and ZrO{sub 2} additive can inhibit the grain growth. Compared with other samples, (Y{sub 2}O{sub 3}+ZrO{sub 2}) co-doped ceramics exhibit a dense and homogenous fine-grained microstructure. A much better temperature and frequency stability of dielectric properties were realized in these ceramics. The dielectric loss (tan δ) < 0.05 in the frequency range of 200 Hz–60 kHz at room temperature, and in the temperature range of 15–72 °C at 10 kHz was successfully accomplished in (Y{sub 2}O{sub 3}+ZrO{sub 2}) co-doped CCTO ceramics. Low tan δ ∼0.039 and high dielectric constant (ε{sub r} ∼10196) were observed at room temperature and 10 kHz for the above ceramic samples, and the characteristic frequency shifts to higher frequency with increasing measuring temperature. The present results indicate that (Y{sub 2}O{sub 3}+ZrO{sub 2}) co-doping may improve the dielectric properties and increase the grain boundary resistance of CCTO. - Highlights: • Y and Zr co-doped CCTO exhibits a dense and homogenous fine-grained microstructure. • Y and Zr co-doped CCTO performs a lower dielectric loss in wide-range of frequency. • Temperature and frequency stability of dielectric properties were greatly enhanced.

Comparison of the photoluminescence properties of Eu{sup 2+}, Mn{sup 2+} co-doped M{sub 5}(PO{sub 4}){sub 3}Cl (M = Ca, Sr, Ba)

Energy Technology Data Exchange (ETDEWEB)

Yang, Fengli [National Engineering Research Center for Rare Earth Materials, General Research Institute for Nonferrous Metals, and Grirem Advanced Materials Co., Ltd., Beijing 100088 (China); State Key Laboratory of Rare Earth Materials and Applications, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871 (China); School of Metallurgy and Chemical Engineering, Jiangxi University of Science and Technology, Ganzhou, Jiangxi 341000 (China); An, Wei [School of Physics, Peking University, Beijing 100871 (China); Wei, Heng-Wei [State Key Laboratory of Rare Earth Materials and Applications, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871 (China); Chen, Guantong [National Engineering Research Center for Rare Earth Materials, General Research Institute for Nonferrous Metals, and Grirem Advanced Materials Co., Ltd., Beijing 100088 (China); Zhuang, Weidong, E-mail: wdzhuang@126.com [National Engineering Research Center for Rare Earth Materials, General Research Institute for Nonferrous Metals, and Grirem Advanced Materials Co., Ltd., Beijing 100088 (China); Jing, Xi-Ping, E-mail: xpjing@pku.edu.cn [State Key Laboratory of Rare Earth Materials and Applications, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871 (China)

2014-03-25

Highlights: • Good size match between the doped and host cations narrows the emission band. • Low phonon energy of the hosts enhances the luminescence intensity. • “Inverse bottleneck effect” related to Eu/Mn lifetime mismatch causes quenching. • “Charge transfer process” in the Eu–Mn clusters causes quenching. -- Abstract: Eu{sup 2+} and Mn{sup 2+} singly doped or co-doped M{sub 5}(PO{sub 4}){sub 3}Cl (M = Ca, Sr and Ba) phosphors were synthesized by conventional solid state reactions and characterized by X-ray diffraction (XRD), photoluminescence (PL) spectra, PL decay curves, energy dispersive spectra (EDS) and Raman spectra. The results show that a better size match between the doped cation and the host cation allows a wider solid solution range (e.g. Ca{sup 2+}/Mn{sup 2+}) and a narrower emission band (e.g. Sr{sup 2+}/Eu{sup 2+} and Ca{sup 2+}/Mn{sup 2+}). A lower phonon energy of the host (e.g. the Sr phase) reduces the non-radiation probability and enhances the PL efficiency. The PL performance of the Ba phase is exceptional possibly because of the large size difference between the doped cations and the host cations. The transfer efficiency (η) and the emission quantum efficiency (Q) were analyzed. In the studied phosphors, superficially Eu{sup 2+} efficiently transferred its absorbed energy to Mn{sup 2+} but the Q of the Mn{sup 2+} emission was not as high as expected. Two loss mechanisms are proposed: an “inverse bottleneck effect” and “charge transfer” between Eu{sup 2+} and Mn{sup 2+}.

Metal-insulator transition induced in CaVO3 thin films

International Nuclear Information System (INIS)

Gu Man; Laverock, Jude; Chen, Bo; Smith, Kevin E.; Wolf, Stuart A.; Lu Jiwei

2013-01-01

Stoichiometric CaVO 3 (CVO) thin films of various thicknesses were grown on single crystal SrTiO 3 (STO) (001) substrates using a pulsed electron-beam deposition technique. The CVO films were capped with a 2.5 nm STO layer. We observed a temperature driven metal-insulator transition (MIT) in CVO films with thicknesses below 4 nm that was not observed in either thick CVO films or STO films. The emergence of this MIT can be attributed to the reduction in effective bandwidth due to a crossover from a three-dimensional metal to a two-dimensional insulator. The insulating phase was only induced with a drive current below 0.1 μA. X-ray absorption measurements indicated different electronic structures for thick and very thin films of CVO. Compared with the thick film (∼60 nm), thin films of CVO (2–4 nm) were more two-dimensional with the V charge state closer to V 4+ .

Quenching of surface traps in Mn doped ZnO thin films for enhanced optical transparency

International Nuclear Information System (INIS)

Ilyas, Usman; Rawat, R.S.; Roshan, G.; Tan, T.L.; Lee, P.; Springham, S.V.; Zhang, Sam; Fengji Li; Chen, R.; Sun, H.D.

2011-01-01

The structural and photoluminescence analyses were performed on un-doped and Mn doped ZnO thin films grown on Si (1 0 0) substrate by pulsed laser deposition (PLD) and annealed at different post-deposition temperatures (500-800 deg. C). X-ray diffraction (XRD), employed to study the structural properties, showed an improved crystallinity at elevated temperatures with a consistent decrease in the lattice parameter 'c'. The peak broadening in XRD spectra and the presence of Mn 2p3/2 peak at ∼640 eV in X-ray Photoelectron Spectroscopic (XPS) spectra of the doped thin films confirmed the successful incorporation of Mn in ZnO host matrix. Extended near band edge emission (NBE) spectra indicated the reduction in the concentration of the intrinsic surface traps in comparison to the doped ones resulting in improved optical transparency. Reduced deep level emission (DLE) spectra in doped thin films with declined PL ratio validated the quenching of the intrinsic surface traps thereby improving the optical transparency and the band gap, essential for optoelectronic and spintronic applications. Furthermore, the formation and uniform distribution of nano-sized grains with improved surface features of Mn-doped ZnO thin films were observed in Field Emission Scanning Electron Microscopy (FESEM) images.

Fabrication and characterization of polyvinyl alcohol/metal (Ca, Mg, Ti) doped zirconium phosphate nanocomposite films for scaffold-guided tissue engineering application

International Nuclear Information System (INIS)

Kalita, Himani; Pal, Pallabi; Dhara, Santanu; Pathak, Amita

2017-01-01

Nanocomposite films of polyvinyl alcohol (PVA) and zirconium phosphate (ZrP)/doped ZrP (doped with Ca, Mg, Ti) nanoparticles have been developed by solvent casting method to assess their potential as matrix material in scaffold-guided tissue engineering application. The prepared ZrP and doped ZrP nanoparticles as well as the nanocomposite films were characterized by various spectroscopic and microscopic techniques. Nanoindentation studies revealed improved nanomechanical properties in the PVA/doped ZrP nanocomposite films (highest for PVA/Ti doped ZrP: hardness = 262.4 MPa; elastic modulus = 5800 MPa) as compared to the PVA/ZrP and neat PVA films. In-vitro cell culture experiments carried out to access the cellular viability, attachment, proliferation, and migration on the substrates, using mouse fibroblast (3T3) cell lines, inferred enhanced bioactivity in the PVA/doped ZrP nanocomposite films (highest for PVA/Ca doped ZrP) in contrast to PVA/ZrP and neat PVA films. Controlled biodegradability as well as swelling behavior, superior bioactivity and improved mechanical properties of the PVA/doped ZrP nanocomposite films make them promising matrix materials for scaffold-guided tissue engineering application. - Highlights: • PVA/ZrP (undoped/doped with Ca, Mg and Ti) nanocomposite scaffolds were developed. • The nanocomposites were prepared via solvent casting method. • PVA/doped ZrP films exhibited enhanced mechanical properties than PVA/undoped ZrP. • Excellent bioactivity was observed in the PVA/doped ZrP films than PVA/undoped ZrP.

Fabrication and characterization of polyvinyl alcohol/metal (Ca, Mg, Ti) doped zirconium phosphate nanocomposite films for scaffold-guided tissue engineering application

Energy Technology Data Exchange (ETDEWEB)

Kalita, Himani [Department of Chemistry, Indian Institute of Technology Kharagpur, West Bengal 721302 (India); Pal, Pallabi; Dhara, Santanu [School of Medical Science and Technology, Indian Institute of Technology Kharagpur, West Bengal 721302 (India); Pathak, Amita, E-mail: ami@chem.iitkgp.ernet.in [Department of Chemistry, Indian Institute of Technology Kharagpur, West Bengal 721302 (India)

2017-02-01

Nanocomposite films of polyvinyl alcohol (PVA) and zirconium phosphate (ZrP)/doped ZrP (doped with Ca, Mg, Ti) nanoparticles have been developed by solvent casting method to assess their potential as matrix material in scaffold-guided tissue engineering application. The prepared ZrP and doped ZrP nanoparticles as well as the nanocomposite films were characterized by various spectroscopic and microscopic techniques. Nanoindentation studies revealed improved nanomechanical properties in the PVA/doped ZrP nanocomposite films (highest for PVA/Ti doped ZrP: hardness = 262.4 MPa; elastic modulus = 5800 MPa) as compared to the PVA/ZrP and neat PVA films. In-vitro cell culture experiments carried out to access the cellular viability, attachment, proliferation, and migration on the substrates, using mouse fibroblast (3T3) cell lines, inferred enhanced bioactivity in the PVA/doped ZrP nanocomposite films (highest for PVA/Ca doped ZrP) in contrast to PVA/ZrP and neat PVA films. Controlled biodegradability as well as swelling behavior, superior bioactivity and improved mechanical properties of the PVA/doped ZrP nanocomposite films make them promising matrix materials for scaffold-guided tissue engineering application. - Highlights: • PVA/ZrP (undoped/doped with Ca, Mg and Ti) nanocomposite scaffolds were developed. • The nanocomposites were prepared via solvent casting method. • PVA/doped ZrP films exhibited enhanced mechanical properties than PVA/undoped ZrP. • Excellent bioactivity was observed in the PVA/doped ZrP films than PVA/undoped ZrP.

Room temperature ferromagnetism in undoped and Ni doped In{sub 2}O{sub 3} thin films

Energy Technology Data Exchange (ETDEWEB)

Krishna, N. Sai; Kaleemulla, S., E-mail: skaleemulla@gmail.com; Rao, N. Madhusudhana; Krishnamoorthi, C.; Begam, M. Rigana [Thin Films Laboratory, School of Advanced Sciences, VIT University, Vellore – 632014 (India); Amarendra, G. [Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam – 603102 (India); UGC-DAE-CSR, Kalpakkam Node, Kokilamedu-603104 (India)

2015-06-24

Undoped and Ni (5 at.%) doped In{sub 2}O{sub 3} thin films were deposited on glass substrate using electron beam evaporation technique and Ni doped In{sub 2}O{sub 3} thin films were annealed at 450 oC. A systematic study was carried out on the structural, chemical and magnetic properties of the as deposited and annealed thin films. X-ray diffraction analysis revealed that all the films were cubic in structure and exhibied ferromagnetism at room temperature. The undoped In{sub 2}O{sub 3} thin films exhibited a saturation magnetization of 24.01 emu/cm3. Ni doped In{sub 2}O{sub 3} thin films annealed at 450 oC showed a saturation magnetization of 53.81 emu/cm3.

Improvement of the optoelectronic properties of tin oxide transparent conductive thin films through lanthanum doping

Energy Technology Data Exchange (ETDEWEB)

Mrabet, C., E-mail: chokri.mrabet@hotmail.com; Boukhachem, A.; Amlouk, M.; Manoubi, T.

2016-05-05

This work highlights some physical investigations on tin oxide thin films doped with different lanthanum content (ratio La–to-Sn = 0–3%). Such doped thin films have been successfully grown by spray pyrolysis onto glass substrates at 450 °C. X-ray diffraction (XRD) patterns showed that SnO{sub 2}:La thin films were polycrystalline with tetragonal crystal structure. The preferred orientation of crystallites for undoped SnO{sub 2} thin film was along (110) plane, whereas La-doped ones have rather preferential orientations along (200) direction. Although the grain size values exhibited a decreasing tendency with increasing doping content confirming the role of La as a grain growth inhibitor, dislocation density and microstrain values showed an increasing tendency. Also, Raman spectroscopy shows the bands corresponding to the tetragonal structure for the entire range of La doping. The same technique confirms the presence of La{sub 2}O{sub 3} as secondary phase. Moreover, SEM images showed a porous architecture with presence of big clusters with different sizes and shapes resulting from the agglomeration of small grains round shaped. Photoluminescence spectra of SnO{sub 2}:La thin films exhibit a decrease in the emission intensity with La concentration due to the decrease in grain size. Optical transmittance spectra of the films showed high transparency (∼80%) in the visible region. The dispersion of the refractive index is discussed using both Cauchy model and Wemple–Di-Domenico method. The optical band gap values vary slightly with La doping and were found to be around 3.8 eV. It has been found that La doping causes a pronounced decrease in the sheet resistance by up to two orders of magnitude and allows improving the Haacke's figure of merit (Φ) of the sprayed thin films. Moreover, we have introduced for a first time a new figure of merit for qualifying photo-thermal conversion applications. The obtained high conducting and transparent SnO{sub 2}:La

Effects of Ca-dopant on the pyroelectric, piezoelectric and dielectric properties of (Sr 0.6Ba 0.4) 4Na 2Nb 10O 30 ceramics

KAUST Repository

Yao, Yingbang

2012-12-01

Calcium-doped sodium strontium barium niobate (SBNN, (Sr 0.6Ba 0.4) 4-xCa xNa 2Nb 10O 30, 0 ≤ x ≤ 0.5) ceramics were prepared by a conventional solid-state reaction method. SBNN showed \\'filled\\' tetragonal tungsten-bronze structure with fully occupied A-sites. The tetragonal structure, as revealed by X-ray diffraction (XRD) and Raman spectroscopy, was not affected by the Ca-dopant. Effects of Ca-doping concentration on the phase transitions as well as ferroelectric, piezoelectric and pyroelectric properties of the SBNN ceramics were investigated. From the dielectric studies, two anomalies were observed, namely, a sharp normal ferroelectric transition at 260 °C and a broad maximum at round -110 °C. The later was affected by the Ca-doping concentration and its origin was discussed. At x = 0.3, the sample exhibited the highest pyroelectric coefficient of 168 μC/m 2 K and the largest piezoelectric coefficient (d 33) of 63 pC/N at room temperature. On the basis of our results, the pyroelectric properties of the SBNN were improved by Ca-doping. © 2012 Elsevier B.V. All rights reserved.

Effects of Ca-dopant on the pyroelectric, piezoelectric and dielectric properties of (Sr 0.6Ba 0.4) 4Na 2Nb 10O 30 ceramics

KAUST Repository

Yao, Yingbang; Mak, C. L.

2012-01-01

Calcium-doped sodium strontium barium niobate (SBNN, (Sr 0.6Ba 0.4) 4-xCa xNa 2Nb 10O 30, 0 ≤ x ≤ 0.5) ceramics were prepared by a conventional solid-state reaction method. SBNN showed 'filled' tetragonal tungsten-bronze structure with fully occupied A-sites. The tetragonal structure, as revealed by X-ray diffraction (XRD) and Raman spectroscopy, was not affected by the Ca-dopant. Effects of Ca-doping concentration on the phase transitions as well as ferroelectric, piezoelectric and pyroelectric properties of the SBNN ceramics were investigated. From the dielectric studies, two anomalies were observed, namely, a sharp normal ferroelectric transition at 260 °C and a broad maximum at round -110 °C. The later was affected by the Ca-doping concentration and its origin was discussed. At x = 0.3, the sample exhibited the highest pyroelectric coefficient of 168 μC/m 2 K and the largest piezoelectric coefficient (d 33) of 63 pC/N at room temperature. On the basis of our results, the pyroelectric properties of the SBNN were improved by Ca-doping. © 2012 Elsevier B.V. All rights reserved.

Preparation and properties of KCl-doped Cu{sub 2}O thin film by electrodeposition

Energy Technology Data Exchange (ETDEWEB)

Yu, Xiaojiao, E-mail: yxjw@xaut.edu.cn [Xi’an University of Technology, Xi’an 710048 (China); Li, Xinming [Xi’an University of Technology, Xi’an 710048 (China); Zheng, Gang [Xi’an University of Technology, Xi’an 710048 (China); Northwestern Polytechnical University, Xi’an 710072 (China); Wei, Yuchen [The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong (China); Zhang, Ama; Yao, Binghua [Xi’an University of Technology, Xi’an 710048 (China)

2013-04-01

With the indium tin oxide-coated glass as working electrode, cuprous oxide thin film is fabricated by means of electrodeposition. The effects of KCl doped and annealing treatment upon Cu{sub 2}O thin film morphology, surface resistivity, open-circuit voltage, electric conduction types and visible light response are studied. The research results indicate that KCl doped has a great effect upon Cu{sub 2}O crystal morphology, thus, making Cu{sub 2}O thin film surface resistivity drop, and the open-circuit voltage increase and that electric conduction types are transformed from p type into n type, and the visible light (400–500 nm) absorption rate is slightly reduced. Annealing treatment can obviously decrease Cu{sub 2}O thin film surface resistivity and improve its open-circuit voltage. When KCl concentration in electrolytic solution reaches 7 mmol/L, Cu{sub 2}O thin film morphology can be changed from the dendritic crystal into the cubic crystal and Cu{sub 2}O thin film surface resistivity decreases from the initial 2.5 × 10{sup 6} Ω cm to 8.5 × 10{sup 4} Ω cm. After annealing treatment at 320 °C for 30 min, the surface resistivity decreases to 8.5 × 10{sup 2} Ω cm, and the open-circuit voltage increases from the initial 3.1 mV to 79.2 mV.

Natively textured surface hydrogenated gallium-doped zinc oxide transparent conductive thin films with buffer layers for solar cells

Energy Technology Data Exchange (ETDEWEB)

Chen, Xin-liang, E-mail: cxlruzhou@163.com; Wang, Fei; Geng, Xin-hua; Huang, Qian; Zhao, Ying; Zhang, Xiao-dan

2013-09-02

Natively textured surface hydrogenated gallium-doped zinc oxide (HGZO) thin films have been deposited via magnetron sputtering on glass substrates. These natively textured HGZO thin films exhibit rough pyramid-like textured surface, high optical transmittances in the visible and near infrared region and excellent electrical properties. The experiment results indicate that tungsten-doped indium oxide (In{sub 2}O{sub 3}:W, IWO) buffer layers can effectively improve the surface roughness and enhance the light scattering ability of HGZO thin films. The root-mean-square roughness of HGZO, IWO (10 nm)/HGZO and IWO (30 nm)/HGZO thin films are 28, 44 and 47 nm, respectively. The haze values at the wavelength of 550 nm increase from 7.0% of HGZO thin film without buffer layer to 18.37% of IWO (10 nm)/HGZO thin film. The optimized IWO (10 nm)/HGZO exhibits a high optical transmittance of 82.18% in the visible and near infrared region (λ ∼ 400–1100 nm) and excellent electrical properties with a relatively low sheet resistance of 3.6 Ω/□ and the resistivity of 6.21 × 10{sup −4} Ωcm. - Highlights: • Textured hydrogenated gallium-doped zinc oxide (HGZO) films were developed. • Tungsten-doped indium oxide (IWO) buffer layers were applied for the HGZO films. • Light-scattering ability of the HGZO films can be improved through buffer layers. • Low sheet resistance and high haze were obtained for the IWO(10 nm)/HGZO film. • The IWO/HGZO films are promising transparent conductive layers for solar cells.

Optical and electrical properties of TiOPc doped Alq{sub 3} thin films

Energy Technology Data Exchange (ETDEWEB)

Ramar, M.; Suman, C. K., E-mail: sumanck@nplindia.org; Tyagi, Priyanka; Srivastava, R. [CSIR-Network of Institutes for Solar Energy CSIR - National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi -110012 (India)

2015-06-24

The Titanyl phthalocyanine (TiOPc) was doped in Tris (8-hydroxyquinolinato) aluminum (Alq3) with different concentration. The thin film of optimized doping concentration was studied extensively for optical and electrical properties. The optical properties, studied using ellipsometry, absorption and photoluminescence. The absorption peak of Alq{sub 3} and TiOPc was observed at 387 nm and 707 nm and the photo-luminescence intensity (PL) peak of doped thin film was observed at 517 nm. The DC and AC electrical properties of the thin film were studied by current density-voltage (J-V) characteristics and impedance over a frequency range of 100 Hz - 1 MHz. The electron mobility calculated from trap-free space-charge limited region (SCLC) is 0.17×10{sup −5} cm{sup 2}/Vs. The Cole-Cole plots shows that the TiOPc doped Alq{sub 3} thin film can be represented by a single parallel resistance R{sub P} and capacitance C{sub P} network with a series resistance R{sub S} (10 Ω). The value of R{sub P} and C{sub P} at zero bias was 1587 Ω and 2.568 nF respectively. The resistance R{sub P} decreases with applied bias whereas the capacitance C{sub P} remains almost constant.

Temperature dependence of gas sensing behaviour of TiO2 doped PANI composite thin films

Science.gov (United States)

Srivastava, Subodh; Sharma, S. S.; Sharma, Preetam; Sharma, Vinay; Rajura, Rajveer Singh; Singh, M.; Vijay, Y. K.

2014-04-01

In the present work we have reported the effect of temperature on the gas sensing properties of TiO2 doped PANI composite thin film based chemiresistor type gas sensors for hydrogen gas sensing application. PANI and TiO2 doped PANI composite were synthesized by in situ chemical oxidative polymerization of aniline at low temperature. The electrical properties of these composite thin films were characterized by I-V measurements as function of temperature. The I-V measurement revealed that conductivity of composite thin films increased as the temperature increased. The changes in resistance of the composite thin film sensor were utilized for detection of hydrogen gas. It was observed that at room temperature TiO2 doped PANI composite sensor shows higher response value and showed unstable behavior as the temperature increased. The surface morphology of these composite thin films has also been characterized by scanning electron microscopy (SEM) measurement.

Luminescence properties and gamma-ray response of the Ce and Ca co-doped (Gd,Y)F{sub 3} single crystals

Energy Technology Data Exchange (ETDEWEB)

Kamada, Kei, E-mail: k-kamada@furukawakk.co.jp [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai (Japan); Furukawa Co. Ltd. (Japan); Yanagida, Takayuki; Fujimoto, Yutaka; Fukabori, Akihiro [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai (Japan); Yoshikawa, Akira [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai (Japan); New Industry Creation Hatchery Center, Tohoku University, Sendai (Japan); Nikl, Martin [Institute of Physics AS CR (Czech Republic)

2011-12-11

The Ca0.5% and Ce1%, 3%, 7%, 10% co-doped Gd{sub 0.5}Y{sub 0.5}F{sub 3} single crystals were grown by the {mu}-PD method. In the Ca0.5% and Ce3% co-doped sample, Ce{sup 3+}-perturbed luminescence at 380 nm was observed with 32.4 ns photoluminescence decay time. The energy transfer in the sequence of the regular Ce{sup 3+}{yields} (Gd{sup 3+}){sub n}{yields} the perturbed Ce{sup 3+} sites was evidenced through observation of decay time shortening of the regular Ce{sup 3+} and Gd{sup 3+} centers and the change between the Gd{sup 3+} and Ce{sup 3+}-perturbed emission intensity. The gamma-ray excited scintillation response of the Ca0.5%, Ce7% co-doped Gd{sub 0.5}Y{sub 0.5}F{sub 3} sample was investigated with the help of the pulse height spectra and the light yield, energy resolution and non-proportionality was evaluated in the interval of energies of 59.4-1274 keV.

Synthesis and Characterization of Molybdenum Doped ZnO Thin Films by SILAR Deposition Method

Science.gov (United States)

Radha, R.; Sakthivelu, A.; Pradhabhan, D.

2016-08-01

Molybdenum (Mo) doped zinc oxide (ZnO) thin films were deposited on the glass substrate by Successive Ionic Layer Adsorption and Reaction (SILAR) deposition method. The effect of Mo dopant concentration of 5, 6.6 and 10 mol% on the structural, morphological, optical and electrical properties of n-type Mo doped ZnO films was studied. The X-ray diffraction (XRD) results confirmed that the Mo doped ZnO thin films were polycrystalline with wurtzite structure. The field emission scanning electron microscopy (FESEM) studies shows that the surface morphology of the films changes with Mo doping. A blue shift of the optical band gap was observed in the optical studies. Effect of Mo dopant concentration on electrical conductivity was studied and it shows comparatively high electrical conductivity at 10 mol% of Mo doping concentration.

Preparation and characterization of RF magnetron sputtered CuO/CaTi{sub 4}O{sub 9} thin films with enhanced third-order nonlinear optical properties

Energy Technology Data Exchange (ETDEWEB)

Yin, Congfei; Liang, Xiaojuan, E-mail: lxj6126@126.com; Hu, Guangcai; Hu, Xie; Chen, Xipeng; Li, Pengzhi; Xiang, Weidong, E-mail: xiangweidong001@126.com

2017-04-15

The titanate, is a material of interest for various energy applications, including photovoltaics, catalysts, and high-rate energy storage devices. Herein, its related materials, CuO/CaTi{sub 4}O{sub 9} [CCTO] thin films, were successfully fabricated on SrTiO{sub 3} (100) substrates by RF magnetron sputtering assisted with subsequent oxygen annealing. This obtained CCTO thin films were then systemically studied by X-ray powder diffraction (XRD), atomic force microscopy (AFM), scan electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS) and high-resolution transmission electron microscopy (HRTEM). It was found that CuO and CaTi{sub 4}O{sub 9} (001) particles were closely accumulated together on the surface of the substrate in the annealing process after comparing with that of the as-prepared thin film, which was verified by SEM and AFM results. Furthermore, we investigated the third-order nonlinear optical (NLO) properties of the as-prepared and annealed CCTO thin film by means of the Z-scan technique using 650 nm femtosecond laser pulse. Post-deposition oxygen annealing was found to modify the morphological characteristics of the films, resulting in enhancing their NLO properties. The observation of NLO performance of annealed CCTO thin film indicates that RF magnetron sputtering is a feasible method for the fabrication of optical thin films, which can be expanded to fabricate other NLO materials from the corresponding dispersions. Naturally, we concluded that the CCTO thin film occupy a better NLO property, and thus enlarge its application in nonlinear optics. - Highlights: • The CCTO thin film was prepared using the RF magnetron sputtering and oxygen annealing. • The film was prepared on the SrTiO{sub 3}(100) substrates with a Ca{sub 2}CuO{sub 3} target. • The oxygen annealing was found can effectively enhance the film quality and NLO property. • The film was characterized using XPS, SEM, AFM, TEM, XRD and Z-scan techniques.

Preparation of p-type GaN-doped SnO2 thin films by e-beam evaporation and their applications in p-n junction

Science.gov (United States)

Lv, Shuliang; Zhou, Yawei; Xu, Wenwu; Mao, Wenfeng; Wang, Lingtao; Liu, Yong; He, Chunqing

2018-01-01

Various transparent GaN-doped SnO2 thin films were deposited on glass substrates by e-beam evaporation using GaN:SnO2 targets of different GaN weight ratios. It is interesting to find that carrier polarity of the thin films was converted from n-type to p-type with increasing GaN ratio higher than 15 wt.%. The n-p transition in GaN-doped SnO2 thin films was explained for the formation of GaSn and NO with increasing GaN doping level in the films, which was identified by Hall measurement and XPS analysis. A transparent thin film p-n junction was successfully fabricated by depositing p-type GaN:SnO2 thin film on SnO2 thin film, and a low leakage current (6.2 × 10-5 A at -4 V) and a low turn-on voltage of 1.69 V were obtained for the p-n junction.

Stress-induced metallic behavior under magnetic field in Pr1-xCaxMnO3 (x=0.5 and 0.4) thin films (invited)

International Nuclear Information System (INIS)

Prellier, W.; Simon, Ch.; Mercey, B.; Hervieu, M.; Haghiri-Gosnet, A. M.; Saurel, D.; Lecoeur, Ph.; Raveau, B.

2001-01-01

We have investigated the role of the stress induced by the presence of the substrate in thin films of colossal magnetoresistive manganites on structural, resistive, and magnetic properties. Because of the strong coupling between the small structural distortions related to the charge ordering (CO) and the resistive properties, the presence of the substrate prevents the full development of the charge ordering in Pr 0.5 Ca 0.5 MnO 3 , especially in the very thin films. For thicker films, the CO state exists, but is not fully developed. Correlatively, the magnetic field which is necessary to suppress the CO is decreased drastically from 25 T to about 5 T on SrTiO 3 substrates. We have also investigated the influence of the doping level by studying the case of Pr 0.6 Ca 0.4 MnO 3 . [copyright] 2001 American Institute of Physics

Electrosynthesis and characterization of Fe doped CdSe thin films from ethylene glycol bath

International Nuclear Information System (INIS)

Pawar, S.M.; Moholkar, A.V.; Rajpure, K.Y.; Bhosale, C.H.

2007-01-01

The CdSe and Fe doped CdSe (Fe:CdSe) thin films have been electrodeposited potentiostatically onto the stainless steel and fluorine doped tin oxide (FTO) glass substrates, from ethylene glycol bath containing (CH 3 COO) 2 .Cd.2H 2 O, SeO 2 , and FeCl 3 at room temperature. The doping concentration of Fe is optimized by using (photo) electrochemical (PEC) characterization technique. The deposition mechanism and Fe incorporation are studied by cyclic voltammetry. The structural, surface morphological and optical properties of the deposited CdSe and Fe:CdSe thin films have been studied by X-ray diffraction, scanning electron microscopy (SEM) and optical absorption techniques respectively. The PEC study shows that Fe:CdSe thin films are more photosensitive than that of undoped CdSe thin films. The X-ray diffraction analysis shows that the films are polycrystalline with hexagonal crystal structure. SEM studies reveal that the films with uniformly distributed grains over the entire surface of the substrate. The complete surface morphology has been changed after doping. Optical absorption study shows the presence of direct transition and a considerable decrease in bandgap, E g from 1.95 to 1.65 eV

Atomic layer deposition of Al-doped ZnO thin films

Energy Technology Data Exchange (ETDEWEB)

Tynell, Tommi; Yamauchi, Hisao; Karppinen, Maarit; Okazaki, Ryuji; Terasaki, Ichiro [Department of Chemistry, Aalto University, FI-00076 Aalto (Finland); Department of Physics, Nagoya University, Nagoya 464-8602 (Japan)

2013-01-15

Atomic layer deposition has been used to fabricate thin films of aluminum-doped ZnO by depositing interspersed layers of ZnO and Al{sub 2}O{sub 3} on borosilicate glass substrates. The growth characteristics of the films have been investigated through x-ray diffraction, x-ray reflection, and x-ray fluorescence measurements, and the efficacy of the Al doping has been evaluated through optical reflectivity and Seebeck coefficient measurements. The Al doping is found to affect the carrier density of ZnO up to a nominal Al dopant content of 5 at. %. At nominal Al doping levels of 10 at. % and higher, the structure of the films is found to be strongly affected by the Al{sub 2}O{sub 3} phase and no further carrier doping of ZnO is observed.

Elevated transition temperature in Ge doped VO2 thin films

Science.gov (United States)

Krammer, Anna; Magrez, Arnaud; Vitale, Wolfgang A.; Mocny, Piotr; Jeanneret, Patrick; Guibert, Edouard; Whitlow, Harry J.; Ionescu, Adrian M.; Schüler, Andreas

2017-07-01

Thermochromic GexV1-xO2+y thin films have been deposited on Si (100) substrates by means of reactive magnetron sputtering. The films were then characterized by Rutherford backscattering spectrometry (RBS), four-point probe electrical resistivity measurements, X-ray diffraction, and atomic force microscopy. From the temperature dependent resistivity measurements, the effect of Ge doping on the semiconductor-to-metal phase transition in vanadium oxide thin films was investigated. The transition temperature was shown to increase significantly upon Ge doping (˜95 °C), while the hysteresis width and resistivity contrast gradually decreased. The precise Ge concentration and the film thickness have been determined by RBS. The crystallinity of phase-pure VO2 monoclinic films was confirmed by XRD. These findings make the use of vanadium dioxide thin films in solar and electronic device applications—where higher critical temperatures than 68 °C of pristine VO2 are needed—a viable and promising solution.

Annealing Effect on the Photoelectrochemical Properties of BiVO_4 Thin Film Electrodes

International Nuclear Information System (INIS)

Siti Nur Farhana Mohd Nasir; Mohd Asri Mat Teridi; Mehdi Ebadi; Sagu, J.S.

2015-01-01

Monoclinic bismuth vanadate (BiVO_4) thin film electrodes were fabricated on fluorine-doped tin oxide via aerosol-assisted chemical vapour deposition (AACVD). Annealing and without annealing effect of thin films were analysed by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), ultraviolet-visible spectrophotometry (UV-Vis) and current voltage measurement. All BiVO_4 thin films showed an anodic photocurrent. The sample of BiVO_4 annealed at 400 degree Celsius exhibited the highest photocurrent density of 0.44 mAcm"-"2 vs. Ag/ AgCl at 1.23 V. (author)

Growth and physical properties of highly oriented La-doped (K,Na)NbO3 ferroelectric thin films

International Nuclear Information System (INIS)

Vendrell, X.; Raymond, O.; Ochoa, D.A.; García, J.E.; Mestres, L.

2015-01-01

Lead-free (K,Na)NbO 3 (KNN) and La doped (K,Na)NbO 3 (KNN-La) thin films are grown on SrTiO 3 substrates using the chemical solution deposition method. The effect of adding different amounts of Na and K excess (0–20 mol%) is investigated. The results confirm the necessity of adding 20 mol% excess amounts of Na and K precursor solutions in order to avoid the formation of the secondary phase, K 4 Nb 6 O 17 , as confirmed by X-ray diffraction and Raman spectroscopy. Moreover, when adding a 20 mol% of alkaline metal excess, the thin films are highly textured with out-of-plane preferential orientation in the [100] direction of the [100] orientation of the substrate. Doping with lanthanum results in a decrease of the leakage current density at low electric field, and an increase in the dielectric permittivity across the whole temperature range (80–380 K). Although the (100)-oriented KNN and KNN-La films exhibited rounded hysteresis loops, at low temperatures the films show the typical ferroelectric hysteresis loops. - Highlights: • (K 0.5 Na 0.5 )NbO 3 and [(K 0.5 Na 0.5 ) 0.985 La 0.005 ]NbO 3 thin films have been prepared. • The obtained thin films show an excellent (100) preferred orientation. • Doping with lanthanum results in a decrease of the leakage current density. • The dielectric properties are enhanced when doping with lanthanum

Effect of cerium oxide doping on the performance of CaO-based sorbents during calcium looping cycles.

Science.gov (United States)

Wang, Shengping; Fan, Shasha; Fan, Lijing; Zhao, Yujun; Ma, Xinbin

2015-04-21

A series of CaO-based sorbents were synthesized through a sol-gel method and doped with different amounts of CeO2. The sorbent with a Ca/Ce molar ratio of 15:1 showed an excellent absorption capacity (0.59 gCO2/g sorbent) and a remarkable cycle durability (up to 18 cycles). The admirable capture performance of CaCe-15 was ascribed to its special morphology formed by the doping of CeO2 and the well-distributed CeO2 particles. The sorbents doped with CeO2 possessed a loose shell-connected cross-linking structure, which was beneficial for the contact between CaO and CO2. CaO and CeO2 were dispersed homogeneously, and the existence of CeO2 also decreased the grain size of CaO. The well-dispersed CeO2, which could act as a barrier, effectively prevented the CaO crystallite from growing and sintering, thus the sorbent exhibited outstanding stability. The doping of CeO2 also improved the carbonation rate of the sorbent, resulting in a high capacity in a short period of time.

Low-temperature preparation of rutile-type TiO2 thin films for optical coatings by aluminum doping

Science.gov (United States)

Ishii, Akihiro; Kobayashi, Kosei; Oikawa, Itaru; Kamegawa, Atsunori; Imura, Masaaki; Kanai, Toshimasa; Takamura, Hitoshi

2017-08-01

A rutile-type TiO2 thin film with a high refractive index (n), a low extinction coefficient (k) and small surface roughness (Ra) is required for use in a variety of optical coatings to improve the controllability of the reflection spectrum. In this study, Al-doped TiO2 thin films were prepared by pulsed laser deposition, and the effects of Al doping on their phases, optical properties, surface roughness and nanoscale microstructure, including Al distribution, were investigated. By doping 5 and 10 mol%Al, rutile-type TiO2 was successfully prepared under a PO2 of 0.5 Pa at 350-600 °C. The nanoscale phase separation in the Al-doped TiO2 thin films plays an important role in the formation of the rutile phase. The 10 mol%Al-doped rutile-type TiO2 thin film deposited at 350 °C showed excellent optical properties of n ≈ 3.05, k ≈ 0.01 (at λ = 400 nm) and negligible surface roughness, at Ra ≈ 0.8 nm. The advantages of the superior optical properties and small surface roughness of the 10 mol%Al-doped TiO2 thin film were confirmed by fabricating a ten-layered dielectric mirror.

Ionized zinc vacancy mediated ferromagnetism in copper doped ZnO thin films

Directory of Open Access Journals (Sweden)

Shi-Yi Zhuo

2012-03-01

Full Text Available This paper reports the origin of ferromagnetism in Cu-doped ZnO thin films. Room-temperature ferromagnetism is obtained in all the thin films when deposited at different oxygen partial pressure. An obviously enhanced peak corresponding to zinc vacancy is observed in the photoluminescence spectra, while the electrical spin resonance measurement implies the zinc vacancy is negative charged. After excluding the possibility of direct exchange mechanisms (via free carriers, we tentatively propose a quasi-indirect exchange model (via ionized zinc vacancy for Cu-doped ZnO system.

Inverted organic solar cells with solvothermal synthesized vanadium-doped TiO2 thin films as efficient electron transport layer

Institute of Scientific and Technical Information of China (English)

Mehdi Ahmadi; Sajjad Rashidi Dafeh; Samaneh Ghazanfarpour; Mohammad Khanzadeh

2017-01-01

We investigated the effects of using different thicknesses of pure and vanadium-doped thin films of TiO2 as the electron transport layer in the inverted configuration of organic photovoltaic cells based on poly (3-hexylthiophene) P3HT:[6-6] phenyl-(6) butyric acid methyl ester (PCBM).1％ vanadium-doped TiO2 nanoparticles were synthesized via the solvothermal method.Crystalline structure,morphology,and optical properties of pure and vanadium-doped TiO2 thin films were studied by different techniques such as x-ray diffraction,scanning electron microscopy,transmittance electron microscopy,and UV-visible transmission spectrum.The doctor blade method which is compatible with roll-2-roll printing was used for deposition of pure and vanadium-doped TiO2 thin films with thicknesses of 30 nm and 60 nm.The final results revealed that the best thickness of TiO2 thin films for our fabricated cells was 30 nm.The cell with vanadium-doped TiO2 thin film showed slightly higher power conversion efficiency and great Jsc of 10.7 mA/cm2 compared with its pure counterpart.In the cells using 60 nm pure and vanadium-doped TiO2 layers,the cell using the doped layer showed much higher efficiency.It is remarkable that the extemal quantum efficiency of vanadium-doped TiO2 thin film was better in all wavelengths.

Optoelectronic properties of doped hydrothermal ZnO thin films

KAUST Repository

Mughal, Asad J.

2017-03-10

Group III impurity doped ZnO thin films were deposited on MgAl2O3 substrates using a simple low temperature two-step deposition method involving atomic layer deposition and hydrothermal epitaxy. Films with varying concentrations of either Al, Ga, or In were evaluated for their optoelectronic properties. Inductively coupled plasma atomic emission spectroscopy was used to determine the concentration of dopants within the ZnO films. While Al and Ga-doped films showed linear incorporation rates with the addition of precursors salts in the hydrothermal growth solution, In-doped films were shown to saturate at relatively low concentrations. It was found that Ga-doped films showed the best performance in terms of electrical resistivity and optical absorbance when compared to those doped with In or Al, with a resistivity as low as 1.9 mΩ cm and an optical absorption coefficient of 441 cm−1 at 450 nm.

Growth and giant coercive field of spinel-structured Co3- x Mn x O4 thin films

Science.gov (United States)

Kwak, Yongsu; Song, Jonghyun; Koo, Taeyeong

2016-08-01

We grew epitaxial thin films of CoMn2O4 and Co2MnO4 on Nb-doped SrTiO3(011) and SrTiO3(001) single crystal substrates using pulsed laser deposition. The magnetic Curie temperature ( T c ) of the Co2MnO4 thin films was ~176 K, which is higher than that of the bulk whereas CoMn2O4 thin films exhibited a value of T c (~151 K) lower than that of the bulk. For the Co2MnO4 thin films, the M - H loop showed a coercive field of ~0.7 T at 10 K, similar to the value for the bulk. However, the M -H loop of the CoMn2O4(0 ll) thin film grown on a Nb-doped SrTiO3(011) substrate exhibited a coercive field of ~4.5 T at 30 K, which is significantly higher than those of the Co2MnO4 thin film and bulk. This giant coercive field, only observed for the CoMn2O4(0 ll) thin film, can be attributed to the shape anisotropy and strong spin-orbit coupling.

Crystal Growth and Neutron Scattering Study of Spin Correlations of the T‧-Structured Pr2‑x Ca x CuO4

Science.gov (United States)

Fujita, Masaki; Tsutsumi, Kenji; Miura, Tomohiro; Danilkin, Sergey

2018-03-01

We studied Ca-doping effect on spin correlations in T‧-structured cuprate oxide RE2CuO4 (RE: rear earth) with growing a sizable single crystal of Pr2‑x Ca x CuO4 (x=0.05 and 0.10) as well as synthesizing powder samples of Pr1.90Ca0.10CuO4 and Eu1.90Ca0.10CuO4. In the all as-prepared and annealed samples, no evidence of shielding signal associated with superconductivity was observed by magnetic susceptibility measurement. Elastic neutron scattering measurements on the as-grown Pr1.90Ca0.10CuO4 clarified the existence of long-ranged magnetic order with commensurate spin correlation. The ordering temperature was determined to be ∼290K, which is comparable to Néel temperature in the parent compound of Pr2CuO4. The existence of commensurate low-energy spin excitation was also confirmed by inelastic neutron scattering measurements for the annealed Pr1.95Ca0.05CuO4. These results strongly suggest a negligible Ca-doping effect on the physical properties in T‧-RE2CuO4, which is quite different from the drastic doping evolution of magnetism in T -RE2CuO4.

Chemical bath deposition of CdS thin films doped with Zn and Cu

Indian Academy of Sciences (India)

Abstract. Zn- and Cu-doped CdS thin films were deposited onto glass substrates by the chemical bath technique. ... Cadmium sulfide; chemical bath deposition; doping; optical window. 1. ..... at low temperature (10 K), finding similar trends than.

Emission spectra of phosphor MgSO4 doped with Dy and Mn

International Nuclear Information System (INIS)

Zhang Chunxiang; Chen Lixin; Tang Qiang; Luo Daling; Qiu Zhiren

2001-01-01

Emission spectra of phosphor MgSO 4 doped with Dy and Dy/Mn were measured with an optical multichannel analyzer and a linear heating system whose temperature was controlled by a microcomputer. The emission spectrum bands at 480 nm and 580 nm of phosphor MgSO 4 doped with Dy were observed in the three dimensional (3D) glow curves. Compared with the 3D spectrum of CaSO 4 :Dy and the spectrum bands of MgSO 4 :Dy shows the same wavelengths which resulted from the quantum transitions among the energy levels of Dy 3 '+ ions. The intensities of the glow peaks in both spectrum bands (480 nm and 580 nm) of phosphor MgSO 4 doped with Dy/Mn were dramatically reduced except the 380 degree C glow peak

Structural and magnetic properties of pure and Cu doped In{sub 2}O{sub 3} thin films

Energy Technology Data Exchange (ETDEWEB)

Krishna, N. Sai; Kaleemulla, S., E-mail: skaleemulla@gmail.com; Rao, N. Madhusudhana; Krishnamoorthi, C.; Begam, M. Rigana [Thin Films Laboratory, School of Advanced Sciences, VIT University, Vellore – 632014 (India); Amarendra, G. [Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam –603102 (India); UGC-DAE-CSR, Kalpakkam Node, Kokilamedu-603104 (India)

2015-06-24

Pure and Cu (7 at.%) doped In{sub 2}O{sub 3} thin films were prepared using an electron beam evaporation technique. A systematic study was carried out on the structural, chemical and magnetic properties of the thin films. X-ray diffraction analysis revealed that all the films were cubic in structure. The pure and Cu doped In{sub 2}O{sub 3} thin films showed ferromagnetism at room temperature. The Cu doped In{sub 2}O{sub 3} thin films showed the saturation magnetization, coercivity and retentivity of 38.71 emu/cm{sup 3}, 245 G and 5.54 emu/cm{sup 3}, respectively.

Structure and magnetic properties of Fe doped In{sub 2}O{sub 3} thin films prepared by electron beam evaporation

Energy Technology Data Exchange (ETDEWEB)

Krishna, N. Sai; Kaleemulla, S., E-mail: skaleemulla@gmail.com; Rao, N. Madhusudhana; Krishnamoorthi, C.; Begam, M. Rigana [Thin Films Laboratory, School of Advanced Sciences, VIT University, Vellore – 632014 (India); Amarendra, G. [Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam – 603102 (India); UGC-DAE-CSR, Kalpakkam Node, Kokilamedu, Tamilnadu -603104 (India)

2015-06-24

Pure and Fe (7 at.%) doped In{sub 2}O{sub 3} thin films were grown onto the glass substrates by electron beam evaporation technique. The structural and magnetic properties of the pure and Fe doped In{sub 2}O{sub 3} thin films have been studied. The undoped and Fe doped In{sub 2}O{sub 3} thin films shown ferromagnetic property at room temperature. A magnetization of 24 emu/cm{sup 3} was observed for pure In{sub 2}O{sub 3} thin films. The magnetization of 38.23 emu/cm{sup 3} was observed for the Fe (7 at.%) doped In{sub 2}O{sub 3} thin films.

Doping site dependent thermoelectric properties of epitaxial strontium titanate thin films

KAUST Repository

Abutaha, Anas I.; Sarath Kumar, S. R.; Mehdizadeh Dehkordi, Arash; Tritt, Terry M.; Alshareef, Husam N.

2014-01-01

We demonstrate that the thermoelectric properties of epitaxial strontium titanate (STO) thin films can be improved by additional B-site doping of A-site doped ABO3 type perovskite STO. The additional B-site doping of A-site doped STO results in increased electrical conductivity, but at the expense of Seebeck coefficient. However, doping on both sites of the STO lattice significantly reduces the lattice thermal conductivity of STO by adding more densely and strategically distributed phononic scattering centers that attack wider phonon spectra. The additional B-site doping limits the trade-off relationship between the electrical conductivity and total thermal conductivity of A-site doped STO, leading to an improvement in the room-temperature thermoelectric figure of merit, ZT. The 5% Pr3+ and 20% Nb5+ double-doped STO film exhibits the best ZT of 0.016 at room temperature. This journal is

Neodymium-doped Sr5(PO4)3F and Sr5(VO4)3F

International Nuclear Information System (INIS)

Corker, D.L.; Nicholls, J.; Loutts, G.B.

1995-01-01

Neodymium-doped Sr 5 (PO 4 ) 3 F [neodymium strontium fluoride phosphate, (Nd,Sr) 5 (PO 4 ) 3 F] and neodymium-doped Sr 5 (VO 4 ) 3 F [neodymium strontium fluoride vanadate, (Nd,Sr) 5 (VO 4 ) 3 F] crystallize in space group P6 3 /m and are isostructural with calcium fluorophosphate, Ca 5 (PO 4 ) 3 F. There are two different Sr sites in Sr 5 (XO 4 ) 3 F, denoted Sr(1) and Sr(2). Using single-crystal X-ray diffraction the two structures were refined to R factors of 2.3 and 2.2%, respectively, showing that Nd is present at both Sr sites in (Sr,Nd) 5 (VO 4 ) 3 F but only at the Sr(2) site in (Sr,Nd) 5 (PO 4 ) 3 F. (orig.)

Inter-granular glassy phases in the low-CaO-doped HIPed Si{sub 3}N{sub 4} ceramics. A review

Energy Technology Data Exchange (ETDEWEB)

Gu, Hui [State Key Lab of High Performance Ceramics and Superfine Microstructures, Shanghai Inst. of Ceramics, Chinese Academy of Sciences, SH (China); Tanaka, Isao [Dept. of Materials Science and Engineering, Kyoto Univ. (Japan); Cannon, Rowland M. [Materials Science Div., Lawrence Berkeley National Lab., CA (United States); Pan, Xiaoqing [Dept. of Materials Science and Engineering, Michigan Univ., Ann Arbor (United States); Ruehle, Manfred [Max Planck Inst. for Metals Research, Stuttgart (Germany)

2010-01-15

This review outlines the essence of a progressive study on the glassy inter-granular film (IGF) in a model ceramic system, the low-CaO-doped HIPed high-purity Si{sub 3}N{sub 4}. This was initiated from the finding of a systematic variation of equilibrium IGF thickness following the dopant chemistry, manifesting its fundamental important to ceramic processing. By employing analytical transmission electron microscopy to measure the local chemistry in IGF, however, significant discrepancy was found between trends of local IGF chemistry and thickness. A stable IGF composition was revealed in this system, while a bi-level distribution of Ca segregation establishes a correspondence between the IGF structure and the surface crystallography. The detection of similar levels of nitrogen in IGF through the whole series further supports the presence of a rather stable IGF chemistry. After the saturation of dopants in the stable IGF, extra CaO was found to re-distribute in pockets by enrichment at tips, leading to a liquid phase separation with the Ca-rich phase wetting the entrance zone contacting IGF. The perspective for establishing a comprehensive correlation between the inter-granular phases and the bi-modal microstructure induced by faster growth of basal facets is briefly discussed to pave the way for future work. (orig.)

Calcium decorated and doped phosphorene for gas adsorption

Energy Technology Data Exchange (ETDEWEB)

Lalitha, Murugan; Nataraj, Yuvarani; Lakshmipathi, Senthilkumar, E-mail: lsenthilkumar@buc.edu.in

2016-07-30

Highlights: • Phosphorene exhibits n-type/p-type nature on decorating/doping calcium respectively. • Gas molecules (CH{sub 4}, CO{sub 2}, H{sub 2} and NH{sub 3}) are physisorbed on phosphorene. • Ca decorated Phosphorene is recommended for high density hydrogen storage applications. • Calcium doping on zigzag and armchair sites makes phosphorene more reactive. • CH{sub 4}, CO{sub 2}, H{sub 2} prefer Ca-doped on zigzag1 site, whereas ammonia prefers Ca-doped on armchair. - Abstract: In this paper, we present the results from first-principles study based on the electronic structure and adsorption characteristics of CH{sub 4}, CO{sub 2}, H{sub 2} and NH{sub 3} adsorbed on Ca decorated/doped phosphorene. Our study finds that phosphorene exhibits n-type behaviour on decorating calcium, and p-type on doping calcium. Gas molecules are physisorbed on both pristine and calcium-mediated phosphorene, visible through their lower binding energy and charge transfer values. Ca decorated phosphorene is suitable for hydrogen storage due to its higher binding energy for H{sub 2}. Ca doped structures shows increased binding affinity towards CH{sub 4} and NH{sub 3} in zigzag1 direction and armchair directions respectively. The extracts of our study implies that Ca doped phosphorene possess increased binding affinity towards gas molecules, and the results are highly helpful for gas adsorption and to design gas sensors based on calcium doped or decorated phosphorene.

Thermally and optically stimulated radiative processes in Eu and Y co-doped LiCaAlF6 crystal

International Nuclear Information System (INIS)

Fukuda, Kentaro; Yanagida, Takayuki; Fujimoto, Yutaka

2015-01-01

Yttrium co-doping was attempted to enhance dosimeter performance of Eu doped LiCaAlF 6 crystal. Eu doped and Eu, Y co-doped LiCaAlF 6 were prepared by the micro-pulling-down technique, and their dosimeter characteristics such as optically stimulated luminescence (OSL) and thermally stimulated luminescence (TSL) were investigated. By yttrium co-doping, emission intensities of OSL and TSL were enhanced by some orders of magnitude. In contrast, scintillation characteristics of yttrium co-doped crystal such as intensity of prompt luminescence induced by X-ray and light yield under neutron irradiation were degraded

Evolution of the mechanical and tribological properties of DLC thin films doped with low-concentration hafnium on 316L steel

Science.gov (United States)

Qi, Meng; Xiao, Jianrong; Gong, Chenyang; Jiang, Aihua; Chen, Yong

2018-01-01

Low concentrations (stainless steel and silicon (1 0 0) substrates by magnetron sputtering to attain superior mechanical and tribological properties. Ar and CH4 were used as source gases. The microstructure, chemical composition, and morphology of the Hf-DLC thin films in various concentrations were analyzed using x-ray diffraction, Raman spectroscopy, x-ray photoelectron spectroscopy, scanning electron microscopy and atomic force microscopy. Results showed that Hf species transferred from the particulate microstructure to Hf carbide phases, and the surface roughness increased monotonically with increasing Hf concentration. Moreover, the hardness and elastic modulus exhibited high values when the doped Hf concentration was 0.42 at%. Similarly, the tribological behaviors and wear life of Hf-DLC thin films had a low friction coefficient and excellent wear resistance at 0.42 at% Hf concentration. Therefore, 0.42 at% Hf is an optimal doping concentration to improve the mechanical and tribological properties of DLC thin films. Generally, the use of low-concentration Hf doping into DLC thin films is novel, and the present results provide guidance for the selection of suitable and effective concentration to optimize Hf-DLC thin films with superior performance.

Preparation, characterization and activity evaluation of p-n junction photocatalyst p-CaFe2O4/n-Ag3VO4 under visible light irradiation

International Nuclear Information System (INIS)

Chen Shifu; Zhao Wei; Liu Wei; Zhang Huaye; Yu Xiaoling; Chen Yinghao

2009-01-01

p-n junction photocatalyst p-CaFe 2 O 4 /n-Ag 3 VO 4 was prepared by ball milling Ag 3 VO 4 in H 2 O doped with p-type CaFe 2 O 4 . The structural and optical properties of the photocatalyst were characterized by X-ray powder diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM) and UV-vis diffuse reflection spectrum (DRS). The photocatalytic activity was evaluated by photocatalytic degradation of methylene blue (MB) under visible light irradiation. The results showed that the photocatalytic activity of the p-CaFe 2 O 4 /n-Ag 3 VO 4 was higher than that of Ag 3 VO 4 . When the amount of doped p-CaFe 2 O 4 was 2.0 wt.% and the p-CaFe 2 O 4 /n-Ag 3 VO 4 was ball milled for 12 h, the photocatalytic degradation efficiency was 85.4%. Effect of ball milling time on the photocatalytic activity of the photocatalyst was also investigated. The mechanisms of the increase in the photocatalytic activity were discussed by the p-n junction principle.

P- and N-type implantation doping of GaN with Ca and O

International Nuclear Information System (INIS)

Zolper, J.C.; Wilson, R.G.; Pearton, S.J.

1996-01-01

III-N photonic devices have made great advances in recent years following the demonstration of doping of GaN p-type with Mg and n-type with Si. However, the deep ionization energy level of Mg in GaN (∼ 160 meV) limits the ionized of acceptors at room temperature to less than 1.0% of the substitutional Mg. With this in mind, the authors used ion implantation to characterize the ionization level of Ca in GaN since Ca had been suggested by Strite to be a shallow acceptor in GaN. Ca-implanted GaN converted from n-to-p type after a 1,100 C activation anneal. Variable temperature Hall measurements give an ionization level at 169 meV. Although this level is equivalent to that of Mg, Ca-implantation may have advantages (shallower projected range and less straggle for a given energy) than Mg for electronic devices. In particular, the authors report the first GaN device using ion implantation doping. This is a GaN junction field effect transistor (JFET) which employed Ca-implantation. A 1.7 microm JFET had a transconductance of 7 mS/mm, a saturation current at 0 V gate bias of 33 mA/mm, a f t of 2.7 GHz, and a f max of 9.4 GHz. O-implantation was also studied and shown to create a shallow donor level (∼ 25 meV) that is similar to Si. SIMS profiles of as-implanted and annealed samples showed no measurable redistribution of either Ca or O in GaN at 1,125 C

Metal-insulator transition induced in CaVO{sub 3} thin films

Energy Technology Data Exchange (ETDEWEB)

Gu Man [Department of Physics, University of Virginia, 382 McCormick Rd., Charlottesville, Virginia 22904 (United States); Laverock, Jude; Chen, Bo; Smith, Kevin E. [Department of Physics, Boston University, 590 Commonwealth Avenue, Boston, Massachusetts 02215 (United States); Wolf, Stuart A. [Department of Physics, University of Virginia, 382 McCormick Rd., Charlottesville, Virginia 22904 (United States); Department of Materials Science and Engineering, University of Virginia, 395 McCormick Rd., Charlottesville, Virginia 22904 (United States); Lu Jiwei [Department of Materials Science and Engineering, University of Virginia, 395 McCormick Rd., Charlottesville, Virginia 22904 (United States)

2013-04-07

Stoichiometric CaVO{sub 3} (CVO) thin films of various thicknesses were grown on single crystal SrTiO{sub 3} (STO) (001) substrates using a pulsed electron-beam deposition technique. The CVO films were capped with a 2.5 nm STO layer. We observed a temperature driven metal-insulator transition (MIT) in CVO films with thicknesses below 4 nm that was not observed in either thick CVO films or STO films. The emergence of this MIT can be attributed to the reduction in effective bandwidth due to a crossover from a three-dimensional metal to a two-dimensional insulator. The insulating phase was only induced with a drive current below 0.1 {mu}A. X-ray absorption measurements indicated different electronic structures for thick and very thin films of CVO. Compared with the thick film ({approx}60 nm), thin films of CVO (2-4 nm) were more two-dimensional with the V charge state closer to V{sup 4+}.

Investigation of structural and optical properties of CaTiO3 powders doped with Mg2+ and Eu3+ ions

International Nuclear Information System (INIS)

Oliveira, Larissa H.; Savioli, Julia; Moura, Ana P. de; Nogueira, Içamira C.; Li, Maximo S.; Longo, Elson; Varela, José A.; Rosa, Ieda L.V.

2015-01-01

In this work, CaTiO 3 powders doped with Mg 2+ ions and CaTiO 3 powders co-doped with Mg 2+ and Eu 3+ ions were prepared by the polymeric precursor method (PPM). These powders were characterized by different characterization techniques to study the influence of Mg 2+ doping as well as Mg 2+ and Eu 3+ co-doping in structural and optical properties of CaTiO 3 perovskite-type structure. The Rietveld refinement and Micro-Raman analyses suggested the substitution Mg 2+ and Eu 3+ ions in the A-site of CaTiO 3 perovskite. The influence of Mg 2+ doping can be detected by the displacement of calcium and oxygen atomic positions when compared to the non-doped CaTiO 3 powder. When Eu 3+ ions are added to the A-site of this perovskite the excess of positive charge can be compensated by the formation of calcium vacancies. Luminescence data showed that Ca 1-x Mg x TiO 3 and Ca 1x Mg x/2 Eu 2y/3 TiO 3 powders are potential materials for fabrication of lighting devices based on near-UV and blue LED using an excitation wavelength of 397 and/or 450 nm. - Highlights: • CaTiO 3 co-doped with Mg 2+ and Eu 3+ were obtained by the Polymeric Precursor Method. • Incorporation of Mg 2+ and Eu 3+ ions in the CaTiO 3 lattice. • Enhancement of the Eu 3+ photoluminescence

Synthesis and Characterization of Nd(3+)-Doped CaF2 Nanoparticles.

Science.gov (United States)

Yuan, Dan; Li, Weiwei; Mei, Bingchu; Song, Jinghong

2015-12-01

The Ca(1-x)F(2+x):Nd(x) nanoparticles were synthesized by chemical direct precipitation method. X-ray Diffraction (XRD), Scanning Electron Microscopy (SEM), Image analyzer, absorption spectrum and transmittance were taken to characterization the phases, morphologies, sizes, size distribution and optical properties of the samples. The results indicate that the Ca(1-x)F(2+x):Nd(x) samples can be rationally modified in size and morphology by altering the Nd3+ ions doping concentration. With increasing concentration of Nd3+ ions, the particle size decreased from 24 to 14 nm, the intensity of the diffraction peaks decreased, the Ca(1-x)F(2+x):Nd(x) particles aggregated ion of the formed clusters which should have an effect on both speed and orientation of the particles growth. The transmittance of ceramics with a thickness of 2 mm showed that the transmittance can reach 90% when the doping concentration was 5%, which should be profitable for LD pumping.

Evolution of Spin fluctuations in CaFe2As2 with Co-doping.

Science.gov (United States)

Sapkota, A.; Das, P.; Böhmer, A. E.; Abernathy, D. L.; Canfield, P. C.; Kreyssig, A.; McQueeney, R. J.; Goldman, A. I.

Spin fluctuations are an essential ingredient for superconductivity in Fe-based supercondcutors. In Co-doped BaFe2As2, the system goes from the antiferromagnetic (AFM) state to the superconducting (SC) state with Co doping, and the spin fluctuations also evolve from well-defined spin waves with spin gap in the AFM regime to gapless overdamped or diffused fluctuations in the SC regime. CaFe2As2 has a stronger magneto-elastic coupling than BaFe2As2 and no co-existence of SC and AFM region as observed in BaFe2As2 with Co doping. Here, we will discuss the evolution of spin fluctuations in CaFe2As2 with Co doping. Work at the Ames Laboratory was supported by US DOE, Basic Energy Sciences, Division of Material Sciences and Engineering, under contract No. DE-AC02-07CH11358. This research used resources of SNS, a DOE office of science user facility operated by ORNL.

Epitaxial stabilization of ultra thin films of electron doped manganites

Energy Technology Data Exchange (ETDEWEB)

Middey, S., E-mail: smiddey@uark.edu; Kareev, M.; Meyers, D.; Liu, X.; Cao, Y.; Tripathi, S.; Chakhalian, J. [Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701 (United States); Yazici, D.; Maple, M. B. [Department of Physics, University of California, San Diego, La Jolla, California 92093 (United States); Ryan, P. J.; Freeland, J. W. [Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439 (United States)

2014-05-19

Ultra-thin films of the electron doped manganite La{sub 0.8}Ce{sub 0.2}MnO{sub 3} were grown in a layer-by-layer growth mode on SrTiO{sub 3} (001) substrates by pulsed laser interval deposition. High structural quality and surface morphology were confirmed by a combination of synchrotron based x-ray diffraction and atomic force microscopy. Resonant X-ray absorption spectroscopy measurements confirm the presence of Ce{sup 4+} and Mn{sup 2+} ions. In addition, the electron doping signature was corroborated by Hall effect measurements. All grown films show a ferromagnetic ground state as revealed by both dc magnetization and x-ray magnetic circular dichroism measurements and remain insulating contrary to earlier reports of a metal-insulator transition. Our results hint at the possibility of electron-hole asymmetry in the colossal magnetoresistive manganite phase diagram akin to the high-T{sub c} cuprates.

Fabrication and characterization of polyvinyl alcohol/metal (Ca, Mg, Ti) doped zirconium phosphate nanocomposite films for scaffold-guided tissue engineering application.

Science.gov (United States)

Kalita, Himani; Pal, Pallabi; Dhara, Santanu; Pathak, Amita

2017-02-01

Nanocomposite films of polyvinyl alcohol (PVA) and zirconium phosphate (ZrP)/doped ZrP (doped with Ca, Mg, Ti) nanoparticles have been developed by solvent casting method to assess their potential as matrix material in scaffold-guided tissue engineering application. The prepared ZrP and doped ZrP nanoparticles as well as the nanocomposite films were characterized by various spectroscopic and microscopic techniques. Nanoindentation studies revealed improved nanomechanical properties in the PVA/doped ZrP nanocomposite films (highest for PVA/Ti doped ZrP: hardness=262.4MPa; elastic modulus=5800MPa) as compared to the PVA/ZrP and neat PVA films. In-vitro cell culture experiments carried out to access the cellular viability, attachment, proliferation, and migration on the substrates, using mouse fibroblast (3T3) cell lines, inferred enhanced bioactivity in the PVA/doped ZrP nanocomposite films (highest for PVA/Ca doped ZrP) in contrast to PVA/ZrP and neat PVA films. Controlled biodegradability as well as swelling behavior, superior bioactivity and improved mechanical properties of the PVA/doped ZrP nanocomposite films make them promising matrix materials for scaffold-guided tissue engineering application. Copyright © 2016 Elsevier B.V. All rights reserved.

Fabrication of p-type conductivity in SnO{sub 2} thin films through Ga doping

Energy Technology Data Exchange (ETDEWEB)

Tsay, Chien-Yie, E-mail: cytsay@fcu.edu.tw; Liang, Shan-Chien

2015-02-15

Highlights: • P-type Ga-doped SnO{sub 2} semiconductor films were prepared by sol-gel spin coating. • Optical bandgaps of the SnO{sub 2}:Ga films are narrower than that of the SnO{sub 2} film. • SnO{sub 2}:Ga films exhibited p-type conductivity as Ga doping content higher than 10%. • A p-n heterojunction composed of p-type SnO{sub 2}:Ga and n-type ZnO:Al was fabricated. - Abstract: P-type transparent tin oxide (SnO{sub 2}) based semiconductor thin films were deposited onto alkali-free glass substrates by a sol-gel spin-coating method using gallium (Ga) as acceptor dopant. In this study, we investigated the influence of Ga doping concentration ([Ga]/[Sn] + [Ga] = 0%, 5%, 10%, 15%, and 20%) on the structural, optical and electrical properties of SnO{sub 2} thin films. XRD analysis results showed that dried Ga-doped SnO{sub 2} (SnO{sub 2}:Ga) sol-gel films annealed in oxygen ambient at 520 °C for 1 h exhibited only the tetragonal rutile phase. The average optical transmittance of as-prepared thin film samples was higher than 87.0% in the visible light region; the optical band gap energy slightly decreased from 3.92 eV to 3.83 eV with increases in Ga doping content. Hall effect measurement showed that the nature of conductivity of SnO{sub 2}:Ga thin films changed from n-type to p-type when the Ga doping level was 10%, and when it was at 15%, Ga-doped SnO{sub 2} thin films exhibited the highest mean hole concentration of 1.70 × 10{sup 18} cm{sup -3}. Furthermore, a transparent p-SnO{sub 2}:Ga (Ga doping level of 15%)/n-ZnO:Al (Al doping level of 2%) heterojunction was fabricated on alkali-free glass. The I-V curve measurement for the p-n heterojunction diode showed a typical rectifying characteristic with a forward turn-on voltage of 0.65 V.

Fluorine doped vanadium dioxide thin films for smart windows

International Nuclear Information System (INIS)

Kiri, Pragna; Warwick, Michael E.A.; Ridley, Ian; Binions, Russell

2011-01-01

Thermochromic fluorine doped thin films of vanadium dioxide were deposited from the aerosol assisted chemical vapour deposition reaction of vanadyl acetylacetonate, ethanol and trifluoroacetic acid on glass substrates. The films were characterised with scanning electron microscopy, variable temperature Raman spectroscopy and variable temperature UV/Vis spectroscopy. The incorporation of fluorine in the films led to an increase in the visible transmittance of the films whilst retaining the thermochromic properties. This approach shows promise for improving the aesthetic properties of vanadium dioxide thin films.

Effect of chlorine doping on the structural, morphological, optical and electrical properties of spray deposited CdS thin films

Directory of Open Access Journals (Sweden)

T. Sivaraman

2015-10-01

Full Text Available CdS and chlorine doped CdS (CdS:Cl thin films with different Cl-doping levels (0, 2, 4, 6 and 8 at% have been deposited on glass substrates by a spray pyrolysis technique using a perfume atomizer. The effect of Cl doping on the structural, morphological, optical and electrical properties of the films was investigated. XRD patterns revealed that all the films exhibit hexagonal crystal structure with a preferential orientation along the (0 0 2 plane irrespective of the Cl doping level. The particle size value decreases from 22.03 nm to 18.12 nm with increase in Cl concentration. Optical band gap is blue-shifted from 2.48 eV to 2.73 eV with increase in Cl doping concentration. All the films have resistivity in the order of 104 Ω cm. The obtained results confirm that chlorine as an anionic dopant material can enhance the physical properties of CdS thin films to a large extent.

Combined sonochemical/CVD method for preparation of nanostructured carbon-doped TiO{sub 2} thin film

Energy Technology Data Exchange (ETDEWEB)

Rasoulnezhad, Hossein [Semiconductor Department, Materials and Energy Research Center (MERC), Karaj (Iran, Islamic Republic of); Kavei, Ghassem, E-mail: kaveighassem@gmail.com [Semiconductor Department, Materials and Energy Research Center (MERC), Karaj (Iran, Islamic Republic of); Ahmadi, Kamran [Semiconductor Department, Materials and Energy Research Center (MERC), Karaj (Iran, Islamic Republic of); Rahimipour, Mohammad Reza [Ceramic Department, Materials and Energy Research Center (MERC), Karaj (Iran, Islamic Republic of)

2017-06-30

Highlights: • Combination of sonochemical and CVD methods for preparation of nanostructured carbon-doped TiO{sub 2} thin film on glass substrate, for the first time. • High transparency, monodispersity and homogeneity of the prepared thin films. • Preparation of the carbon-doped TiO{sub 2} thin films with nanorod and nanosphere morphologies. - Abstract: The present work reports the successful synthesis of the nanostructured carbon-doped TiO{sub 2} thin films on glass substrate by combination of chemical vapor deposition (CVD) and ultrasonic methods, for the first time. In this method the ultrasound waves act as nebulizer for converting of sonochemically prepared TiO{sub 2} sol to the mist particles. These mist particles were thermally decomposed in subsequent CVD chamber at 320 °C to produce the carbon-doped TiO{sub 2} thin films. The obtained thin films were characterized by means of X-ray Diffraction (XRD), Raman spectroscopy, diffuse reflectance spectroscopy (DRS), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and scanning electron microscopy (SEM) techniques. The results show that the prepared thin films have anatase crystal structure and nanorod morphology, which calcination of them at 800 °C results in the conversion of nanorods to nanoparticles. In addition, the prepared samples have high transparency, monodispersity and homogeneity. The presence of the carbon element in the structure of the thin films causes the narrowing of the band-gap energy of TiO{sub 2} to about 2.8 eV, which results in the improvement of visible light absorption capabilities of the thin film.

Simultaneous thermal stability and phase change speed improvement of Sn15Sb85 thin film through erbium doping

Science.gov (United States)

Zou, Hua; Zhu, Xiaoqin; Hu, Yifeng; Sui, Yongxing; Sun, Yuemei; Zhang, Jianhao; Zheng, Long; Song, Zhitang

2016-12-01

In general, there is a trade off between the phase change speed and thermal stability in chalcogenide phase change materials, which leads to sacrifice the one in order to ensure the other. For improving the performance, doping is a widely applied technological process. Here, we fabricated Er doped Sn15Sb85 thin films by magnetron sputtering. Compared with the pure Sn15Sb85, we show that Er doped Sn15Sb85 thin films exhibit simultaneous improvement over the thermal stability and the phase change speed. Thus, our results suggest that Er doping provides the opportunity to solve the contradiction. The main reason for improvement of both thermal stability and crystallization speed is due to the existence of Er-Sb and Er-Sn bonds in Er doped Sn15Sb85 films. Hence, Er doped Sn15Sb85 thin films are promising candidates for the phase change memory application, and this method could be extended to other lanthanide-doped phase change materials.

Hole doping by pressure on the 1111 pnictides CaFeAsF and SrFeAsF

International Nuclear Information System (INIS)

Freitas, Daniele C; Sow, Amadou; Núñez-Regueiro, Manuel; Garbarino, Gastón; Weht, Ruben; Zhu, Xiyu; Han, Fei; Cheng, Peng; Ju, Jing; Hu Wen, Hai

2014-01-01

We determine the pressure phase diagram of the 1111 compounds CaFeAsF and SrFeAsF, up to 20 GPa and down to 4 K by electrical resistivity measurements and the change of structure up to 40 GPa at room temperature. The antiferromagnetic transition temperature, as determined by the derivative peak, shows a minimum at ∼5 GPa (10 GPa) for the Ca (Sr) compound. For CaFeAsF, superconductivity appears at this minimum, coincident with the development of a previously reported monoclinic phase. For SrFeAsF, where the orthorhombic and the monoclinic phase were reported to coexist, superconductivity exists above P≥1 GPa. Both phase diagrams can be scaled by a shift of ∼10 GPa pressure at which the volume of SrFeAsF and that of CaFeAsF at ambient pressure coincide. The difference of our phase diagram with that of electron-doped 1111 samples is accounted for by hole doping under pressure, which we verified through electron band structure calculations. (papers)

Combined effect of oxygen deficient point defects and Ni doping in radio frequency magnetron sputtering deposited ZnO thin films

Energy Technology Data Exchange (ETDEWEB)

Saha, B., E-mail: biswajit.physics@gmail.com [Thin Film and Nano Science Laboratory, Department of Physics, Jadavpur University, 700 032 Kolkata (India); Department of Physics, National Institute of Technology Agartala, Jirania 799046, Tripura (India); Das, N.S.; Chattopadhyay, K.K. [Thin Film and Nano Science Laboratory, Department of Physics, Jadavpur University, 700 032 Kolkata (India)

2014-07-01

Ni doped ZnO thin films with oxygen deficiency have been synthesized on glass substrates by radio frequency magnetron sputtering technique using argon plasma. The combined effect of point defects generated due to oxygen vacancies and Ni doping on the optical and electrical properties of ZnO thin films has been studied in this work. Ni doping concentrations were varied and the structural, optical and electrical properties of the films were studied as a function of doping concentrations. The films were characterized with X-ray diffractometer, UV–Vis–NIR spectrophotometer, X-ray photoelectron spectroscopy, atomic force microscopy and electrical conductivity measurements. Oxygen deficient point defects (Schottky defects) made the ZnO thin film highly conducting while incorporation of Ni dopant made it more functional regarding their electrical and optical properties. The films were found to have tunable electrical conductivity with Ni doping concentrations. - Highlights: • ZnO thin films prepared by radio frequency magnetron sputtering technique • Synthesis process was stimulated to introduce Schottky-type point defects. • Point defects and external doping of Ni made ZnO thin films more functional. • Point defect induced high electrical conductivity in ZnO thin film. • Significant shift in optical bandgap observed in ZnO with Ni doping concentrations.

A short literature survey on iron and cobalt ion doped TiO2 thin films and photocatalytic activity of these films against fungi

International Nuclear Information System (INIS)

Tatlıdil, İlknur; Bacaksız, Emin; Buruk, Celal Kurtuluş; Breen, Chris; Sökmen, Münevver

2012-01-01

Highlights: ► Co or Fe doped TiO 2 thin films were prepared by sol–gel method. ► We obtained lower E g values for Fe-doped and Co-TiO 2 thin films. ► Doping greatly affected the size and shape of the TiO 2 nanoparticles. ► Photocatalytic killing effect of the doped TiO 2 thin films on C. albicans and A. niger was significantly higher than undoped TiO 2 thin film for short exposure periods. - Abstract: In this study, a short recent literature survey which concentrated on the usage of Fe 3+ or Co 2+ ion doped TiO 2 thin films and suspensions were summarized. Additionally, a sol–gel method was used for preparation of the 2% Co or Fe doped TiO 2 thin films. The surface of the prepared materials was characterised using scanning-electron microscopy (SEM) combined with energy dispersive X-ray (EDX) analysis and band gap of the films were calculated from the transmission measurements that were taken over the range of 190 and 1100 nm. The E g value was 3.40 eV for the pure TiO 2 , 3.00 eV for the Fe-doped TiO 2 film and 3.25 eV for Co-TiO 2 thin film. Iron or cobalt doping at lower concentration produce more uniformed particles and doping greatly affected the size and shape of the TiO 2 nanoparticles. Photocatalytic killing effect of the 2% Co doped TiO 2 thin film on Candida albicans was significantly higher than Fe doped TiO 2 thin film for short and long exposure periods. Doped thin films were more effective on Aspergillus niger for short exposure periods.

Synthesis and characterization of three-dimensional transition metal ions doped zinc oxide based dilute magnetic semiconductor thin films

Science.gov (United States)

Samanta, Kousik

Dilute magnetic semiconductors (DMS), especially 3d-transition metal (TM) doped ZnO based DMS materials are the most promising candidates for optoelectronics and spintronics applications; e.g. in spin light emitting diode (SLED), spin transistors, and spin field effect transistors (SFET), etc. In the present dissertation, thin films of Zn1-xTMxO (TM = Co2+, Cu2+, and Mn2+) were grown on (0001) oriented Al2O3 substrates by pulsed laser deposition (PLD) technique. The films were highly c-axis oriented, nearly single crystalline, and defects free for a limited concentration of the dilution of transition metal ions. In particular, we have obtained single crystalline phases of Zn1-xTMxO thin films for up to 10, 3, and 5 stoichiometric percentages of Co2+, Cu2+, and Mn2+ respectively. Raman micro-probe system was used to understand the structural and lattice dynamical properties at different physical conditions. The confinement of optical phonons in the disorder lattice was explained by alloy potential fluctuation (APF) using a spatial correlation (SC) model. The detailed analysis of the optical phonon behavior in disorder lattice confirmed the substitution of the transition metal ions in Zn 2+ site of the ZnO host lattice. The secondary phases of ZnCo 2O4, CuO, and ZnMn2O4 were detected in higher Co, Cu, and Mn doped ZnO thin films respectively; where as, XRD did not detect these secondary phases in the same samples. Room temperature ferromagnetism was observed in Co2+ and Cu2+ ions doped ZnO thin films with maximum saturation magnetization (Ms) of 1.0 and 0.76 muB respectively. The origin of the observed ferromagnetism in Zn1-xCoxO thin films was tested by the controlled introduction of shallow donors (Al) in Zn0.9-x Co0.1O:Alx (x = 0.005 and 0.01) thin films. The saturation magnetization for the 10% Co-doped ZnO (1.0 muB /Co) at 300K reduced (˜0.25 muB/Co) due to Al doping. The observed ferromagnetism and the reduction due to Al doping can be explained by the Bound

Electromagnetic and optical characteristics of Nb5+-doped double-crossover and salmon DNA thin films

Science.gov (United States)

Babu Mitta, Sekhar; Reddy Dugasani, Sreekantha; Jung, Soon-Gil; Vellampatti, Srivithya; Park, Tuson; Park, Sung Ha

2017-10-01

We report the fabrication and physical characteristics of niobium ion (Nb5+)-doped double-crossover DNA (DX-DNA) and salmon DNA (SDNA) thin films. Different concentrations of Nb5+ ([Nb5+]) are coordinated into the DNA molecules, and the thin films are fabricated via substrate-assisted growth (DX-DNA) and drop-casting (SDNA) on oxygen plasma treated substrates. We conducted atomic force microscopy to estimate the optimum concentration of Nb5+ ([Nb5+]O = 0.08 mM) in Nb5+-doped DX-DNA thin films, up to which the DX-DNA lattices maintain their structures without deformation. X-ray photoelectron spectroscopy (XPS) was performed to probe the chemical nature of the intercalated Nb5+ in the SDNA thin films. The change in peak intensities and the shift in binding energy were witnessed in XPS spectra to explicate the binding and charge transfer mechanisms between Nb5+ and SDNA molecules. UV-visible, Raman, and photoluminescence (PL) spectra were measured to determine the optical properties and thus investigate the binding modes, Nb5+ coordination sites in Nb5+-doped SDNA thin films, and energy transfer mechanisms, respectively. As [Nb5+] increases, the absorbance peak intensities monotonically increase until ˜[Nb5+]O and then decrease. However, from the Raman measurements, the peak intensities gradually decrease with an increase in [Nb5+] to reveal the binding mechanism and binding sites of metal ions in the SDNA molecules. From the PL, we observe the emission intensities to reduce them at up to ˜[Nb5+]O and then increase after that, expecting the energy transfer between the Nb5+ and SDNA molecules. The current-voltage measurement shows a significant increase in the current observed as [Nb5+] increases in the SDNA thin films when compared to that of pristine SDNA thin films. Finally, we investigate the temperature dependent magnetization in which the Nb5+-doped SDNA thin films reveal weak ferromagnetism due to the existence of tiny magnetic dipoles in the Nb5+-doped SDNA

Air stable n-doping of WSe2 by silicon nitride thin films with tunable fixed charge density

International Nuclear Information System (INIS)

Chen, Kevin; Kiriya, Daisuke; Hettick, Mark; Tosun, Mahmut; Ha, Tae-Jun; Madhvapathy, Surabhi Rao; Desai, Sujay; Sachid, Angada; Javey, Ali

2014-01-01

Stable n-doping of WSe 2 using thin films of SiN x deposited on the surface via plasma-enhanced chemical vapor deposition is presented. Positive fixed charge centers inside SiN x act to dope WSe 2 thin flakes n-type via field-induced effect. The electron concentration in WSe 2 can be well controlled up to the degenerate limit by simply adjusting the stoichiometry of the SiN x through deposition process parameters. For the high doping limit, the Schottky barrier width at the metal/WSe 2 junction is significantly thinned, allowing for efficient electron injection via tunneling. Using this doping scheme, we demonstrate air-stable WSe 2 n-MOSFETs with a mobility of ∼70 cm 2 /V s

Highly transparent and conductive Sn/F and Al co-doped ZnO thin films prepared by sol–gel method

International Nuclear Information System (INIS)

Pan, Zhanchang; Luo, Junming; Tian, Xinlong; Wu, Shoukun; Chen, Chun; Deng, Jianfeng; Xiao, Chumin; Hu, Guanghui; Wei, Zhigang

2014-01-01

Highlights: • F/Sn and Al co-doped ZnO thin films were synthesized by sol–gel method. • The co-doped nanocrystals exhibit good crystal quality. • The origin of the photoluminescence emissions was discussed. • The films showed high transmittance and low resistivity. -- Abstract: Al doped ZnO, Al–Sn co-doped ZnO and Al–F co-doped ZnO nanocrystals were successfully synthesized onto glass substrates by the sol–gel method. The structure and morphology of the films are characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and high resolution transmission electron microscopy (HRTEM). The results indicated that all the films were polycrystalline with a hexagonal wurtzite structure and exhibited a c-axis preferred orientation. The electrical and optical properties were also investigated by 4-point probe device and Uv–vis spectroscopy, room temperature photoluminescence (PL) and Raman spectrum (Raman), respectively. The PL and Raman results suggested that the co-doped films with a very low defect concentration and exhibit a better crystallinity than AZO thin films. The XPS study confirmed the incorporation of Al, Sn and F ions in the ZnO lattice

Structural and optical properties of cobalt doped multiferroics BiFeO3 nanostructure thin films

Science.gov (United States)

Prasannakumara, R.; Naik, K. Gopalakrishna

2018-05-01

Bismuth ferrite (BiFeO3) and Cobalt doped BiFeO3 (BiFe1-XCoXO3) nanostructure thin films were deposited on glass substrates by the sol-gel spin coating method. The X-ray diffraction patterns (XRD) of the grown BiFeO3 and BiFe1-XCoXO3 nanostructure thin films showed distorted rhombohedral structure. The shifting of peaks to higher angles was observed in cobalt doped BiFeO3. The surface morphology of the BiFeO3 and BiFe1-XCoXO3 nanostructure thin films were studied using FESEM, an increase in grain size was observed as Co concentration increases. The thickness of the nanostructure thin films was examined using FESEM cross-section. The EDX studies confirmed the elemental composition of the grown BiFeO3 and BiFe1-XCoXO3 nanostructure thin films. The optical characterizations of the grown nanostructure thin films were carried out using FTIR, it confirms the existence of Fe-O and Bi-O bands and UV-Visible spectroscopy shows the increase in optical band gap of the BiFeO3 nanostructure thin films with Co doping by ploting Tauc plot.

Oriented thin films of Na0.6CoO2 and Ca3Co4O9 deposited by spin-coating method on polycrystalline substrate

Czech Academy of Sciences Publication Activity Database

Buršík, Josef; Soroka, Miroslav; Knížek, Karel; Hirschner, Jan; Levinský, Petr; Hejtmánek, Jiří

2016-01-01

Roč. 603, MAR (2016), s. 400-403 ISSN 0040-6090 R&D Projects: GA ČR(CZ) GA14-18392S; GA ČR(CZ) GA13-03708S Institutional support: RVO:61388980 ; RVO:68378271 Keywords : Cobaltates * Thermoelectrics * NaxCoO2 * Ca3Co4O9 * Thin film s * ZrO2 Subject RIV: CA - Inorganic Chemistry; BM - Solid Matter Physics ; Magnetism (FZU-D) Impact factor: 1.879, year: 2016

Transparent nanostructured Fe-doped TiO2 thin films prepared by ultrasonic assisted spray pyrolysis technique

Science.gov (United States)

Rasoulnezhad, Hossein; Hosseinzadeh, Ghader; Ghasemian, Naser; Hosseinzadeh, Reza; Homayoun Keihan, Amir

2018-05-01

Nanostructured TiO2 and Fe-doped TiO2 thin films with high transparency were deposited on glass substrate through ultrasonic-assisted spray pyrolysis technique and were used in the visible light photocatalytic degradation of MB dye. The resulting thin films were characterized by scanning electron microscopy (SEM), Raman spectroscopy, photoluminescence spectroscopy, x-ray diffraction (XRD), and UV-visible absorption spectroscopy techniques. Based on Raman spectroscopy results, both of the TiO2 and Fe-doped TiO2 films have anatase crystal structure, however, because of the insertion of Fe in the structure of TiO2 some point defects and oxygen vacancies are formed in the Fe-doped TiO2 thin film. Presence of Fe in the structure of TiO2 decreases the band gap energy of TiO2 and also reduces the electron–hole recombination rate. Decreasing of the electron–hole recombination rate and band gap energy result in the enhancement of the visible light photocatalytic activity of the Fe-doped TiO2 thin film.

Luminescence and energy transfer of Sm3+ and Eu3+ in Ca2PO4Cl

International Nuclear Information System (INIS)

Wang, Zhijun; Li, Panlai; Yang, Zhiping; Guo, Qinglin

2014-01-01

Sm 3+ , Eu 3+ , and Sm 3+ –Eu 3+ doped Ca 2 PO 4 Cl phosphors are synthesized by a solid-state method. Ca 2 PO 4 Cl:Sm 3+ can produce red emission under the 400 nm radiation excitation, and the emission peak is located at 601 nm, which is assigned to the 4 G 5/2 → 6 H 7/2 transition of Sm 3+ . Ca 2 PO 4 Cl:Eu 3+ can create red emission under the 392 nm radiation excitation, and the strongest peak is located at 620 nm, which is attributed to the 5 D 0 → 7 F 2 transition of Eu 3+ . The energy transfer from Sm 3+ to Eu 3+ in Ca 2 PO 4 Cl has been validated and the critical distance (R c ) of Sm 3+ to Eu 3+ in Ca 2 PO 4 Cl is calculated to be 1.14 nm. With increasing Eu 3+ doping concentration, the energy transfer efficiency (Sm 3+ →Eu 3+ ) gradually increases to 53.7%. The luminescence property of Ca 2 PO 4 Cl:Sm 3+ , Eu 3+ can be tuned by properly tuning the relative ratio of Sm 3+ –Eu 3+ , and the emission intensity of Ca 2 PO 4 Cl:Eu 3+ can be greatly enhanced by codoped Sm 3+ . - Highlights: • Ca 2 PO 4 Cl:Sm 3+ , Eu 3+ can produce red emission under the 400 nm radiation excitation. • The energy transfer from Sm 3+ to Eu 3+ in Ca 2 PO 4 Cl has been validated. • The critical distance of Sm 3+ to Eu 3+ in Ca 2 PO 4 Cl is calculated to be 1.14 nm

Complex boron redistribution kinetics in strongly doped polycrystalline-silicon/nitrogen-doped-silicon thin bi-layers

Energy Technology Data Exchange (ETDEWEB)

Abadli, S. [Department of Electrical Engineering, University Aout 1955, Skikda, 21000 (Algeria); LEMEAMED, Department of Electronics, University Mentouri, Constantine, 25000 (Algeria); Mansour, F. [LEMEAMED, Department of Electronics, University Mentouri, Constantine, 25000 (Algeria); Pereira, E. Bedel [CNRS-LAAS, 7 avenue du colonel Roche, 31077 Toulouse (France)

2012-10-15

We have investigated the complex behaviour of boron (B) redistribution process via silicon thin bi-layers interface. It concerns the instantaneous kinetics of B transfer, trapping, clustering and segregation during the thermal B activation annealing. The used silicon bi-layers have been obtained by low pressure chemical vapor deposition (LPCVD) method at 480 C, by using in-situ nitrogen-doped-silicon (NiDoS) layer and strongly B doped polycrystalline-silicon (P{sup +}) layer. To avoid long-range B redistributions, thermal annealing was carried out at relatively low-temperatures (600 C and 700 C) for various times ranging between 30 min and 2 h. To investigate the experimental secondary ion mass spectroscopy (SIMS) doping profiles, a redistribution model well adapted to the particular structure of two thin layers and to the effects of strong-concentrations has been established. The good adjustment of the simulated profiles with the experimental SIMS profiles allowed a fundamental understanding about the instantaneous physical phenomena giving and disturbing the complex B redistribution profiles-shoulders. The increasing kinetics of the B peak concentration near the bi-layers interface is well reproduced by the established model. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Influence of lithium doping on the structural and electrical characteristics of ZnO thin films

Energy Technology Data Exchange (ETDEWEB)

Johny, T. Anto [Centre for Materials for Electronics Technology (C-MET), (Department of Information Technology, Scientific Society, Ministry of Communication and Information Technology, Govt. of India), Athani - PO, Thrissur, 680 581 Kerala (India); Kumar, Viswanathan, E-mail: vkumar10@yahoo.com [Centre for Materials for Electronics Technology (C-MET), (Department of Information Technology, Scientific Society, Ministry of Communication and Information Technology, Govt. of India), Athani - PO, Thrissur, 680 581 Kerala (India); Imai, Hideyuki; Kanno, Isaku [Micro Engineering, Kyoto University, Kyoto 606-8501 (Japan)

2012-06-30

Thin films of undoped and lithium-doped Zinc oxide, (Zn{sub 1-x}Li{sub x})O; x = 0, 0.05, 0.10 and 0.20 were prepared by sol-gel method using spin-coating technique on silicon substrates [(111)Pt/Ti/SiO{sub 2}/Si)]. The influence of lithium doping on the structural, electrical and microstructural characteristics have been investigated by means of X-ray diffraction, leakage current, piezoelectric measurements and scanning electron microscopy. The resistivity of the ZnO film is found to increase markedly with low levels (x {<=} 0.05) of lithium doping thereby enhancing their piezoelectric applications. The transverse piezoelectric coefficient, e{sub 31}{sup Low-Asterisk} has been determined for the thin films having the composition (Zn{sub 0.95}Li{sub 0.05})O, to study their suitability for piezoelectric applications. - Highlights: Black-Right-Pointing-Pointer Preferentially c-axis oriented (Zn{sub 1-x}Li{sub x})O films were spin-coated on glass. Black-Right-Pointing-Pointer (Zn{sub 1-x}Li{sub x})O thin films exhibit dense columnar microstructure. Black-Right-Pointing-Pointer Low levels of lithium doping, increases the electrical resistivity of ZnO thin films. Black-Right-Pointing-Pointer (Zn{sub 1-x}Li{sub x})O thin films show high values of transverse piezoelectric coefficient, e{sup Low-Asterisk }{sub 31}.

Praseodymium Cuprate Thin Film Cathodes for Intermediate Temperature Solid Oxide Fuel Cells: Roles of Doping, Orientation, and Crystal Structure.

Science.gov (United States)

Mukherjee, Kunal; Hayamizu, Yoshiaki; Kim, Chang Sub; Kolchina, Liudmila M; Mazo, Galina N; Istomin, Sergey Ya; Bishop, Sean R; Tuller, Harry L

2016-12-21

Highly textured thin films of undoped, Ce-doped, and Sr-doped Pr 2 CuO 4 were synthesized on single crystal YSZ substrates using pulsed laser deposition to investigate their area-specific resistance (ASR) as cathodes in solid-oxide fuel cells (SOFCs). The effects of T' and T* crystal structures, donor and acceptor doping, and a-axis and c-axis orientation on ASR were systematically studied using electrochemical impedance spectroscopy on half cells. The addition of both Ce and Sr dopants resulted in improvements in ASR in c-axis oriented films, as did the T* crystal structure with the a-axis orientation. Pr 1.6 Sr 0.4 CuO 4 is identified as a potential cathode material with nearly an order of magnitude faster oxygen reduction reaction kinetics at 600 °C compared to thin films of the commonly studied cathode material La 0.6 Sr 0.4 Co 0.8 Fe 0.2 O 3-δ . Orientation control of the cuprate films on YSZ was achieved using seed layers, and the anisotropy in the ASR was found to be less than an order of magnitude. The rare-earth doped cuprate was found to be a versatile system for study of relationships between bulk properties and the oxygen reduction reaction, critical for improving SOFC performance.

Magnetic and dielectric properties of alkaline earth Ca2+ and Ba2+ ions co-doped BiFeO3 nanoparticles

International Nuclear Information System (INIS)

Yang, C.; Liu, C.Z.; Wang, C.M.; Zhang, W.G.; Jiang, J.S.

2012-01-01

Ca 2+ and Ba 2+ ions co-doped BiFeO 3 nanoparticles, Bi 0.8 Ca 0.2−x Ba x FeO 3 (x=0–0.20), were prepared by a sol–gel method. The phase structure, grain size, dielectric and magnetic properties of the prepared samples were investigated. The results showed that the lattice structure of the nanoparticles transformed from rhombohedral (x=0) to orthorhombic (x=0.07–0.19) and then to tetragonal (x=0.20) with x increased. The dielectric properties of the nanoparticles were affected by the properties of the substitutional ions as well as the crystalline structure of the samples. The magnetic properties of the nanoparticles were greatly improved and the T N of the nanoparticles was obviously increased. All the Ca 2+ and Ba 2+ ions co-doped BiFeO 3 nanoparticles presented the high ratio of M r /M from 0.527 to 0.571 and large coercivity from 4.335 to 5.163 KOe. - Highlights: ► Ca 2+ and Ba 2+ ions co-doped BiFeO 3 nanoparticles were prepared using a sol–gel method. ► The magnetic properties of the nanoparticles are greatly improved. ► The Neel temperature (T N ) of the nanoparticles is greatly increased. ► Doped ions and crystal structure affect the dielectric properties of the nanoparticles.

Electrical and optical properties of nitrogen doped SnO2 thin films deposited on flexible substrates by magnetron sputtering

International Nuclear Information System (INIS)

Fang, Feng; Zhang, Yeyu; Wu, Xiaoqin; Shao, Qiyue; Xie, Zonghan

2015-01-01

Graphical abstract: The best SnO 2 :N TCO film: about 80% transmittance and 9.1 × 10 −4 Ω cm. - Highlights: • Nitrogen-doped tin oxide film was deposited on PET by RF-magnetron sputtering. • Effects of oxygen partial pressure on the properties of thin films were investigated. • For SnO 2 :N film, visible light transmittance was 80% and electrical resistivity was 9.1 × 10 −4 Ω cm. - Abstract: Nitrogen-doped tin oxide (SnO 2 :N) thin films were deposited on flexible polyethylene terephthalate (PET) substrates at room temperature by RF-magnetron sputtering. Effects of oxygen partial pressure (0–4%) on electrical and optical properties of thin films were investigated. Experimental results showed that SnO 2 :N films were amorphous state, and O/Sn ratios of SnO 2 :N films were deviated from the standard stoichiometry 2:1. Optical band gap of SnO 2 :N films increased from approximately 3.10 eV to 3.42 eV as oxygen partial pressure increased from 0% to 4%. For SnO 2 :N thin films deposited on PET, transmittance was about 80% in the visible light region. The best transparent conductive oxide (TCO) deposited on flexible PET substrates was SnO 2 :N thin films preparing at 2% oxygen partial pressure, the transmittance was about 80% and electrical conductivity was about 9.1 × 10 −4 Ω cm

Effect of Eu{sup 3+} doping on the structural and photoluminescence properties of cubic CaCO{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Gao, Yan; Sun, Yidi; Zou, Haifeng; Sheng, Ye; Zhou, Xiuqing; Zhang, Bowen; Zhou, Bing, E-mail: zhoubing@jlu.edu.cn

2016-01-15

Graphical abstract: - Highlights: • The doping of Eu{sup 3+} ions decreased the size of CaCO{sub 3} nanoparticles. • The doping of Eu{sup 3+} ions brought about the change of CaCO{sub 3}'s optical bandgap. • Multiple sites of Eu{sup 3+} in CaCO{sub 3} nanocrystals have been identified. - Abstract: CaCO{sub 3}:xEu{sup 3+} (x = 0, 0.010, 0.015, 0.020, and 0.025) cubic nanoparticles were synthesized by carbonation method. The powder XRD patterns and SEM images of the CaCO{sub 3}:xEu{sup 3+} nanoparticles demonstrate that both the crystalline sizes and average particle sizes of synthesized samples decreased with the increase of Eu{sup 3+} content until x = 0.020. Kubelka–Munk plots and bandgap energy estimation indicate that the doping of Eu{sup 3+} ions changed optical bandgap of CaCO{sub 3}. Photoluminescence (PL) spectra show that the PL intensity of the CaCO{sub 3}:xEu{sup 3+} nanoparticles was enhanced with the increase of Eu{sup 3+} content in cubic CaCO{sub 3}:xEu{sup 3+}, and concentration quenching occurred when Eu{sup 3+} concentration exceeded 2.0 mol%. In addition, the doped sites of Eu{sup 3+} in CaCO{sub 3} crystalline were identified by the site-selective spectroscopy and decay curves.

Preparation of manganese-doped ZnO thin films and their ...

Indian Academy of Sciences (India)

Various physical and chemical techniques that has been used to deposit Mn:ZnO thin films .... appearance and Mn-doped films were slightly brownish with a good adherence to the ..... shows a constantly decreasing trend with increasing man-.

Thermally and optically stimulated radiative processes in Eu and Y co-doped LiCaAlF{sub 6} crystal

Energy Technology Data Exchange (ETDEWEB)

Fukuda, Kentaro, E-mail: ken-fukuda@tokuyama.co.jp [Tokuyama Corporation, 1-1 Mikage-cho, Shunan-shi, Yamaguchi 745-8648 (Japan); Yanagida, Takayuki; Fujimoto, Yutaka [Kyushu Institute of Technology, 2-4 Hibikino, Wakamatsu, Kitakyushu, Fukuoka 808-0196 (Japan)

2015-06-01

Yttrium co-doping was attempted to enhance dosimeter performance of Eu doped LiCaAlF{sub 6} crystal. Eu doped and Eu, Y co-doped LiCaAlF{sub 6} were prepared by the micro-pulling-down technique, and their dosimeter characteristics such as optically stimulated luminescence (OSL) and thermally stimulated luminescence (TSL) were investigated. By yttrium co-doping, emission intensities of OSL and TSL were enhanced by some orders of magnitude. In contrast, scintillation characteristics of yttrium co-doped crystal such as intensity of prompt luminescence induced by X-ray and light yield under neutron irradiation were degraded.

Electrical properties of tin-doped zinc oxide nanostructures doped at different dopant concentrations

International Nuclear Information System (INIS)

Nasir, M. F.; Zainol, M. N.; Hannas, M.; Mamat, M. H.; Rusop, Mohamad; Rahman, S. A.

2016-01-01

This project has been focused on the electrical and optical properties respectively on the effect of Tin doped zinc oxide (ZnO) thin films at different dopant concentrations. These thin films were doped with different Sn dopant concentrations at 1 at%, 2 at%, 3 at%, 4 at% and 5 at% was selected as the parameter to optimize the thin films quality while the annealing temperature is fixed 500 °C. Sn doped ZnO solutions were deposited onto the glass substrates using sol-gel spin coating method. This project was involved with three phases, which are thin films preparation, deposition and characterization. The thin films were characterized using Current Voltage (I-V) measurement and ultraviolet-visible-near-infrared (UV-vis-NIR) spectrophotometer (Perkin Elmer Lambda 750) for electrical properties and optical properties. The electrical properties show that the resistivity is the lowest at 4 at% Sn doping concentration with the value 3.08 × 10"3 Ωcm"−"1. The absorption coefficient spectrum obtained shows all films exhibit very low absorption in the visible (400-800 nm) and near infrared (NIR) (>800 nm) range but exhibit high absorption in the UV range.

Electrical properties of tin-doped zinc oxide nanostructures doped at different dopant concentrations

Energy Technology Data Exchange (ETDEWEB)

Nasir, M. F., E-mail: babaibaik2002@yahoo.com; Zainol, M. N., E-mail: nizarzainol@yahoo.com; Hannas, M., E-mail: mhannas@gmail.com [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); Mamat, M. H., E-mail: mhmamat@salam.uitm.edu.my; Rusop, Mohamad, E-mail: rusop@salam.uitm.edu.my [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); NANO-SciTech Centre (NST), Institute of Science (IOS), Universiti Teknologi MARA - UiTM, 40450 Shah Alam, Selangor (Malaysia); Rahman, S. A., E-mail: saadah@um.edu.my [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); Low Dimensional Materials Research Centre, Physics Department, Faculty of Science, University of Malaya, 50603 Kuala Lumpur (Malaysia)

2016-07-06

This project has been focused on the electrical and optical properties respectively on the effect of Tin doped zinc oxide (ZnO) thin films at different dopant concentrations. These thin films were doped with different Sn dopant concentrations at 1 at%, 2 at%, 3 at%, 4 at% and 5 at% was selected as the parameter to optimize the thin films quality while the annealing temperature is fixed 500 °C. Sn doped ZnO solutions were deposited onto the glass substrates using sol-gel spin coating method. This project was involved with three phases, which are thin films preparation, deposition and characterization. The thin films were characterized using Current Voltage (I-V) measurement and ultraviolet-visible-near-infrared (UV-vis-NIR) spectrophotometer (Perkin Elmer Lambda 750) for electrical properties and optical properties. The electrical properties show that the resistivity is the lowest at 4 at% Sn doping concentration with the value 3.08 × 10{sup 3} Ωcm{sup −1}. The absorption coefficient spectrum obtained shows all films exhibit very low absorption in the visible (400-800 nm) and near infrared (NIR) (>800 nm) range but exhibit high absorption in the UV range.

Thermoluminescent dosemeters of CaSO4: Dy + Teflon

International Nuclear Information System (INIS)

Campos, L.L.

1989-01-01

The development of a pellet dosemeter of CaSO 4 : Dy + Teflon at the Dosimetric Materials Production Laboratory - IPEN/Brazilian CNEN-SP is presented. The pellets were produced by cold pressing and sintering a mixture of CaSO 4 : Dy and Teflon powders. The pellet characteristics from the point of view of dosimetry. A filter combination providing an energy independent response from 20 KeV to 1,25 MeV was obtained. The dosemeter consists of three pellets sealed between two thin plastic sheets and placed under plastic and lead filters. The combination of these three filters allows to determine the energy of an unknown source. (author) [pt

Stabilization and enhanced energy gap by Mg doping in ɛ-phase Ga2O3 thin films

Science.gov (United States)

Bi, Xiaoyu; Wu, Zhenping; Huang, Yuanqi; Tang, Weihua

2018-02-01

Mg-doped Ga2O3 thin films with different doping concentrations were deposited on sapphire substrates using laser molecular beam epitaxy (L-MBE) technique. X-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS) and ultraviolet-visible (UV-vis) absorption spectrum were used to characterize the crystal structure and optical properties of the as-grown films. Compared to pure Ga2O3 thin film, the Mg-doped thin films have transformed from the most stable β-phase into ɛ-phase. The absorption edge shifted to about 205 nm and the optical bandgap increased to ˜ 6 eV. These properties reveal that Mg-doped Ga2O3 films may have potential applications in the field of deep ultraviolet optoelectronic devices, such as deep ultraviolet photodetectors, short wavelength light emitting devices and so on.

Improved electrical conduction properties in unintentionally-doped ZnO thin films treated by rapid thermal annealing

International Nuclear Information System (INIS)

Lee, Youngmin; Lee, Choeun; Shim, Eunhee; Jung, Eiwhan; Lee, Jinyong; Kim, Deukyoung; Lee, Sejoon; Fu, Dejun; Yoon, Hyungdo

2011-01-01

The effects of thermal treatments on the electrical conduction properties for the unintentionally doped ZnO thin films were investigated. Despite the decreased carrier density in the annealed ZnO thin films, the conductivity was increased because the contribution of the effective carrier mobility to the conductivity of the unintentionally-doped ZnO thin films is greater than that of the carrier density. The resistivity exponentially decreased with increasing RTA temperature, and this result was confirmed to come from the enhanced effective carrier-mobility, which originated from the increased crystallite size in the annealed ZnO thin films.

Improved electrical conduction properties in unintentionally-doped ZnO thin films treated by rapid thermal annealing

Energy Technology Data Exchange (ETDEWEB)

Lee, Youngmin; Lee, Choeun; Shim, Eunhee; Jung, Eiwhan; Lee, Jinyong; Kim, Deukyoung; Lee, Sejoon [Dongguk University-Seoul, Seoul (Korea, Republic of); Fu, Dejun [Wuhan University, Wuhan (China); Yoon, Hyungdo [Korea Electronics Technology Institute, Seongnam (Korea, Republic of)

2011-10-15

The effects of thermal treatments on the electrical conduction properties for the unintentionally doped ZnO thin films were investigated. Despite the decreased carrier density in the annealed ZnO thin films, the conductivity was increased because the contribution of the effective carrier mobility to the conductivity of the unintentionally-doped ZnO thin films is greater than that of the carrier density. The resistivity exponentially decreased with increasing RTA temperature, and this result was confirmed to come from the enhanced effective carrier-mobility, which originated from the increased crystallite size in the annealed ZnO thin films.

Diffusivity, solubility and thermodynamic modelling of diffusion growth of Ga"3"+-doped LiTaO_3 thin film for integrated optics

International Nuclear Information System (INIS)

Zhang, De-Long; Zhang, Qun; Zhang, Pei; Kang, Jian; Wong, Wing-Han; Yu, Dao-Yin

2016-01-01

thermodynamic model for Ga"3"+ diffusion growth is suggested and verified experimentally. From the measured Ga"3"+ profiles, some thermodynamic parameters were obtained. These include diffusivity, diffusion constant, chemical activation energy, solubility, solubility constant and enthalpy of solution. These parameters are crucial to design and growth of a desired Ga"3"+-doped LT thin film for integrated optics. Comparison shows that Ga"3"+ grows in LT two orders faster than Ti"4"+ because of its smaller radius. Ga"3"+ diffusivity/solubility in LT is one order/1.5-fold lower than in LiNbO_3 because Ta has a larger atomic mass and hence a lower mobility than Nb.

Doping effect on the physical properties of Ca10Pt3As8(Fe2As2)5 single crystals

Science.gov (United States)

Pan, Jiayun; Karki, Amar; Plummer, E. W.; Jin, Rongying

2017-12-01

Ca10Pt3As8(Fe2As2)5 is a unique parent compound for superconductivity, which consists of both semiconducting Pt3As8 and metallic FeAs layers. We report the observation of superconductivity induced via chemical doping in either Ca site using rare-earth (RE) elements (RE  =  La, Gd) or Fe site using Pt. The interlayer distance and the normal-state physical properties of the doped system change correspondingly. The coupled changes include (1) superconducting transition temperature T c increases with increasing both doping concentration and interlayer distance, (2) our T c value is higher than previously reported maximum value for Pt doping in the Fe site, (3) both the normal-state in-plane resistivity and out-of-plane resistivity change from non-metallic to metallic behavior with increasing doping concentration and T c, and (4) the transverse in-plane magnetoresistance (MRab) changes from linear-field dependence to quadratic behavior upon increasing T c. For La-doped compound with the highest T c (~35 K), upper critical fields (Hc2ab , Hc2c ), coherence lengths (ξ ab, ξ c), and in-plane penetration depth (λ ab) are estimated. We discuss the relationship between chemical doping, interlayer distance, and physical properties in this system.

Enhancing the performance of organic thin-film transistors using an organic-doped inorganic buffer layer

Energy Technology Data Exchange (ETDEWEB)

Su, Shui-Hsiang, E-mail: shsu@isu.edu.tw; Wu, Chung-Ming; Kung, Shu-Yi; Yokoyama, Meiso

2013-06-01

Organic thin-film transistors (OTFTs) with various buffer layers between the active layer and source/drain electrodes were investigated. The structure was polyethylene terephthalate/indium-tin oxide/poly(methyl methacrylate) (PMMA)/pentacene/buffer layer/Au (source/drain). V{sub 2}O{sub 5}, 4,4′,4″-tris{N,(3-methylpheny)-N-phenylamino}-triphenylamine (m-MTDATA) and m-MTDATA-doped V{sub 2}O{sub 5} films were utilized as buffer layers. The electrical performances of OTFTs in terms of drain current, threshold voltage, mobility and on/off current ratio have been determined. As a result, the saturation current of − 40 μA is achieved in OTFTs with a 10% m-MTDATA-doped V{sub 2}O{sub 5} buffer layer at a V{sub GS} of − 60 V. The on/off current ratio reaches 2 × 10{sup 5}, which is approximately double of the device without a buffer layer. The energy band diagrams of the electrode/buffer layer/pentacene were measured using ultra-violet photoelectron spectroscopy. The improvement in electrical characteristics of the OTFTs is attributable to the weakening of the interface dipole and the lowering of the barrier to enhance holes transportation from the source electrode to the active layer. - Highlights: • A buffer layer enhances the performance of organic thin-film transistors (OTFTs). • The buffer layer consists of organic-doped inorganic material. • Interface dipole is weakened at the active layer/electrodes interface of OTFTs.

Comparison of the Thermal Degradation of Heavily Nb-Doped and Normal PZT Thin Films.

Science.gov (United States)

Yang, Jeong-Suong; Kang, YunSung; Kang, Inyoung; Lim, SeungMo; Shin, Seung-Joo; Lee, JungWon; Hur, Kang Heon

2017-03-01

The degradation of niobium-doped lead zirconate titanate (PZT) and two types of PZT thin films were investigated. Undoped PZT, two-step PZT, and heavily Nb-doped PZT (PNZT) around the morphotropic phase boundary were in situ deposited under optimum condition by RF-magnetron sputtering. All 2- [Formula: see text]-thick films had dense perovskite columnar grain structure and self-polarized (100) dominant orientation. PZT thin films were deposited on Pt/TiO x bottom electrode on Si wafer, and PNZT thin film was on Ir/TiW electrode with the help of orientation control. Sputtered PZT films formed on microelectromechanical system (MEMS) gyroscope and the degradation rates were compared at different temperatures. PNZT showed the best resistance to the thermal degradation, followed by two-step PZT. To clarify the effect of oxygen vacancies on the degradation of the film at high temperature, photoluminescence measurement was conducted, which confirmed that oxygen vacancy rate was the lowest in heavy PNZT. Nb-doping PZT thin films suppressed the oxygen deficit and made high imprint with self-polarization. This defect distribution and high internal field allowed PNZT thin film to make the piezoelectric sensors more stable and reliable at high temperature, such as reflow process of MEMS packaging.

Experimental and numerical investigation of contact-area-limited doping for top-contact pentacene thin-film transistors with Schottky contact.

Science.gov (United States)

Noda, Kei; Wada, Yasuo; Toyabe, Toru

2015-10-28

Effects of contact-area-limited doping for pentacene thin-film transistors with a bottom-gate, top-contact configuration were investigated. The increase in the drain current and the effective field-effect mobility was achieved by preparing hole-doped layers underneath the gold contact electrodes by coevaporation of pentacene and 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ), confirmed by using a thin-film organic transistor advanced simulator (TOTAS) incorporating Schottky contact with a thermionic field emission (TFE) model. Although the simulated electrical characteristics fit the experimental results well only in the linear regime of the transistor operation, the barrier height for hole injection and the gate-voltage-dependent hole mobility in the pentacene transistors were evaluated with the aid of the device simulation. This experimental data analysis with the simulation indicates that the highly-doped semiconducting layers prepared in the contact regions can enhance the charge carrier injection into the active semiconductor layer and concurrent trap filling in the transistor channel, caused by the mitigation of a Schottky energy barrier. This study suggests that both the contact-area-limited doping and the device simulation dealing with Schottky contact are indispensable in designing and developing high-performance organic thin-film transistors.

Properties of fluorine and tin co-doped ZnO thin films deposited by sol–gel method

International Nuclear Information System (INIS)

Pan, Zhanchang; Zhang, Pengwei; Tian, Xinlong; Cheng, Guo; Xie, Yinghao; Zhang, Huangchu; Zeng, Xiangfu; Xiao, Chumin; Hu, Guanghui; Wei, Zhigang

2013-01-01

Highlights: •F and Sn co-doped ZnO thin films were synthesized by sol–gel method. •The effects of different F doping concentrations were investigated. •The co-doped nanocrystals exhibit good crystal quality. •The origin of the photoluminescence emissions was discussed. •The films showed high transmittance and low resistivity. -- Abstract: Highly transparent and conducting fluorine (F) and tin (Sn) co-doped ZnO (FTZO) thin films were deposited on glass substrates by the sol–gel processing. The structure and morphology of the films are characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM) with various F doping concentrations. SEM images showed that the hexagonal ZnO crystals were well-arranged on the glass substrates and the HRTEM images indicated that the individual nanocrystals are highly oriented and exhibited a perfect lattice structure. Owing to its high carrier concentration and mobility, as well as good crystal quality, a minimum resistivity of 1 × 10 −3 Ω cm was obtained from the FTZO thin film with 3% F doping, and the average optical transmittance in the entire visible wavelength region was higher than 90%. The X-ray photoelectron spectroscopy (XPS) study confirmed the substitution of Zn 2+ by Sn ions and Room temperature photoluminescence (PL) observed for pure and FTZO thin films suggested the films exhibit a good crystallinity with a very low defect concentration

CaFe2O4 as a self-sufficient solar energy converter

Science.gov (United States)

Tablero, C.

2017-10-01

An ideal solar energy to electricity or fuel converter should work without the use of any external bias potential. An analysis of self-sufficiency when CaFe2O4 is used to absorb the sunlight is carried out based on the CaFe2O4 absorption coefficient. We started to obtain this coefficient theoretically within the experimental bandgap range in order to fix the interval of possible values of photocurrents, maximum absorption efficiencies, and photovoltages and thus that of self-sufficiency considering only the radiative processes. Also for single-gap CaFe2O4, we evaluate an alternative for increasing the photocurrent and maximum absorption efficiency based on inserting an intermediate band using high doping or alloying.

Preparation of CaSO4:Dy by precipitation method to gamma radiation dosimetry

International Nuclear Information System (INIS)

Rivera, T.; Roman, J.; Azorin, J.; Sosa, R.; Guzman, J.; Serrano, A.K.; Garcia, M.; Alarcon, G.

2010-01-01

This paper presents the results of the preparation and characterization of dysprosium-doped calcium sulfate (CaSO 4 :Dy) phosphor, which was obtained by homogeneous precipitation from calcium acetate Ca(CH 3 COO - ) 2 . Structural and morphological characteristics were studied using a scanning electronic microscope (SEM). The structure of all compounds was determined by X-ray diffraction method too. Thermoluminescence (TL) emission properties of CaSO 4 :Dy under gamma radiation effects were studied. This phosphor powder presented a TL glow curve with two peaks (Tmax) centered at around of 180 and 300 deg. C, respectively. The TL response of CaSO 4 :Dy as a function of gamma absorbed dose was linear in a wide range. Both emission and excitation spectra were also obtained. Results showed that this new preparation method of CaSO 4 :Dy TL phosphor is less expensive, cleaner and safer than the conventional preparation method.

Altering properties of cerium oxide thin films by Rh doping

International Nuclear Information System (INIS)

Ševčíková, Klára; Nehasil, Václav; Vorokhta, Mykhailo; Haviar, Stanislav; Matolín, Vladimír

2015-01-01

Highlights: • Thin films of ceria doped by rhodium deposited by RF magnetron sputtering. • Concentration of rhodium has great impact on properties of Rh–CeO x thin films. • Intensive oxygen migration in films with low concentration of rhodium. • Oxygen migration suppressed in films with high amount of Rh dopants. - Abstract: Ceria containing highly dispersed ions of rhodium is a promising material for catalytic applications. The Rh–CeO x thin films with different concentrations of rhodium were deposited by RF magnetron sputtering and were studied by soft and hard X-ray photoelectron spectroscopies, Temperature programmed reaction and X-ray powder diffraction techniques. The sputtered films consist of rhodium–cerium mixed oxide where cerium exhibits a mixed valency of Ce 4+ and Ce 3+ and rhodium occurs in two oxidation states, Rh 3+ and Rh n+ . We show that the concentration of rhodium has a great influence on the chemical composition, structure and reducibility of the Rh–CeO x thin films. The films with low concentrations of rhodium are polycrystalline, while the films with higher amount of Rh dopants are amorphous. The morphology of the films strongly influences the mobility of oxygen in the material. Therefore, varying the concentration of rhodium in Rh–CeO x thin films leads to preparing materials with different properties

Pulsed laser deposited Al-doped ZnO thin films for optical applications

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Gurpreet Kaur

2015-02-01

Full Text Available Highly transparent and conducting Al-doped ZnO (Al:ZnO thin films were grown on glass substrates using pulsed laser deposition technique. The profound effect of film thickness on the structural, optical and electrical properties of Al:ZnO thin films was observed. The X-ray diffraction depicts c-axis, plane (002 oriented thin films with hexagonal wurtzite crystal structure. Al-doping in ZnO introduces a compressive stress in the films which increase with the film thickness. AFM images reveal the columnar grain formation with low surface roughness. The versatile optical properties of Al:ZnO thin films are important for applications such as transparent electromagnetic interference (EMI shielding materials and solar cells. The obtained optical band gap (3.2–3.08 eV was found to be less than pure ZnO (3.37 eV films. The lowering in the band gap in Al:ZnO thin films could be attributed to band edge bending phenomena. The photoluminescence spectra gives sharp visible emission peaks, enables Al:ZnO thin films for light emitting devices (LEDs applications. The current–voltage (I–V measurements show the ohmic behavior of the films with resistivity (ρ~10−3 Ω cm.

Synergistic effect of indium and gallium co-doping on the properties of RF sputtered ZnO thin films

Science.gov (United States)

Shaheera, M.; Girija, K. G.; Kaur, Manmeet; Geetha, V.; Debnath, A. K.; Karri, Malvika; Thota, Manoj Kumar; Vatsa, R. K.; Muthe, K. P.; Gadkari, S. C.

2018-04-01

ZnO thin films were synthesized using RF magnetron sputtering, with simultaneous incorporation of Indium (In) and Gallium (Ga). The structural, optical, chemical composition and surface morphology of the pure and co-doped (IGZO) thin films were characterized by X-Ray diffraction (XRD), UV-visible spectroscopy, Field Emission Scanning Electron Microscopy (FESEM), and Raman spectroscopy. XRD revealed that these films were oriented along c-axis with hexagonal wurtzite structure. The (002) diffraction peak in the co-doped sample was observed at 33.76° with a slight shift towards lower 2θ values as compared to pure ZnO. The surface morphology of the two thin films was observed to differ. For pure ZnO films, round grains were observed and for IGZO thin films round as well as rod type grains were observed. All thin films synthesized show excellent optical properties with more than 90% transmission in the visible region and band gap of the films is observed to decrease with co-doping. The co doping of In and Ga is therefore expected to provide a broad range optical and physical properties of ZnO thin films for a variety of optoelectronic applications.

Pyroelectricity of silicon-doped hafnium oxide thin films

Science.gov (United States)

Jachalke, Sven; Schenk, Tony; Park, Min Hyuk; Schroeder, Uwe; Mikolajick, Thomas; Stöcker, Hartmut; Mehner, Erik; Meyer, Dirk C.

2018-04-01

Ferroelectricity in hafnium oxide thin films is known to be induced by various doping elements and in solid-solution with zirconia. While a wealth of studies is focused on their basic ferroelectric properties and memory applications, thorough studies of the related pyroelectric properties and their application potential are only rarely found. This work investigates the impact of Si doping on the phase composition and ferro- as well as pyroelectric properties of thin film capacitors. Dynamic hysteresis measurements and the field-free Sharp-Garn method were used to correlate the reported orthorhombic phase fractions with the remanent polarization and pyroelectric coefficient. Maximum values of 8.21 µC cm-2 and -46.2 µC K-1 m-2 for remanent polarization and pyroelectric coefficient were found for a Si content of 2.0 at%, respectively. Moreover, temperature-dependent measurements reveal nearly constant values for the pyroelectric coefficient and remanent polarization over the temperature range of 0 ° C to 170 ° C , which make the material a promising candidate for IR sensor and energy conversion applications beyond the commonly discussed use in memory applications.

Methylene blue photocatalytic mineralization under visible irradiation on TiO{sub 2} thin films doped with chromium

Energy Technology Data Exchange (ETDEWEB)

Diaz-Uribe, Carlos; Vallejo, William, E-mail: williamvallejo@mail.uniatlantico.edu.co; Ramos, Wilkendry

2014-11-15

Graphical abstract: - Highlights: • We used an easy and inexpensive technique to dope thin films of TiO{sub 2}. • We proved that hydroxyl radicals were generated under visible light irradiation by Cr:TiO{sub 2}. • We used a Haber–Weiss reaction through Cr:TiO{sub 2} catalyst to improve the photo-mineralization process. - Abstract: We studied changes in structural, optical and photocatalytic properties of TiO{sub 2} thin films due to doping process with chromium. Powders of undoped TiO{sub 2} and chromium-doped TiO{sub 2} (Cr:TiO{sub 2}) were synthesized by sol–gel method and, thin films were deposited by doctor blade method. The properties of the thin films were studied by X-ray diffraction (XRD), infrared spectroscopy (IR) and diffuse reflectance. The XRD patterns indicated that doping process changed the crystalline phases radio of TiO{sub 2} thin films, furthermore, the optical analysis showed that band gap value of Cr:TiO{sub 2} thin films was 31% fewer than undoped TiO{sub 2} thin films. Along, Langmuir–Hinshelwood model was used to obtain kinetic information of the photo-mineralization process; results indicated that photocatalytic activity of Cr:TiO{sub 2} thin films were four times better than undoped TiO{sub 2} thin films; finally the synergic effect was tested by addition of the H{sub 2}O{sub 2}, photocatalytic yield was improved from 26% to 61% when methylene blue photo-mineralization was assisted with slightly amount of H{sub 2}O{sub 2}.

Stabilization and enhanced energy gap by Mg doping in ε-phase Ga2O3 thin films

Directory of Open Access Journals (Sweden)

Xiaoyu Bi

2018-02-01

Full Text Available Mg-doped Ga2O3 thin films with different doping concentrations were deposited on sapphire substrates using laser molecular beam epitaxy (L-MBE technique. X-ray diffraction (XRD, x-ray photoelectron spectroscopy (XPS and ultraviolet-visible (UV-vis absorption spectrum were used to characterize the crystal structure and optical properties of the as-grown films. Compared to pure Ga2O3 thin film, the Mg-doped thin films have transformed from the most stable β-phase into ε-phase. The absorption edge shifted to about 205 nm and the optical bandgap increased to ∼ 6 eV. These properties reveal that Mg-doped Ga2O3 films may have potential applications in the field of deep ultraviolet optoelectronic devices, such as deep ultraviolet photodetectors, short wavelength light emitting devices and so on.

EuO and Gd-doped EuO thin films. Epitaxial growth and properties

International Nuclear Information System (INIS)

Sutarto, Ronny

2009-01-01

Europium oxide (EuO) based materials exhibit a wealth of spectacular phenomena, including half-metallic ferromagnetism, metal-insulator transition, colossal magneto-resistance, large magneto-optical Kerr effect, tunable ferromagnetic ordering temperatures, and large and long-lived photo-induced conductivity. These extraordinary properties make EuO an ideal candidate for implementation in device applications, in particular, for spintronics. Most of the work in the past has been carried out on bulk EuO, but for device applications it is preferred to have the EuO in thin lm form. A urry of studies have therefore emerged in the last decade in order to explore a wide variety of preparation routes and to investigate the properties of the resulting EuO thin films. A recent highlight is the demonstration that doped EuO films can be fabricated on Si and GaN, thereby exhibiting the expected spin-polarized transport effects. Nevertheless, it is still far from a trivial task to prepare EuO thin films with well de ned properties. For bulk EuO, it is already known that stoichiometry is the key issue, and that the presence of small amounts of defects or impurities quickly lead to very large deviations of the material properties. In fact, to make bulk EuO to be stoichiometric one needs temperatures as high as 1800 C. It is obvious that such high temperatures are not compatible with device engineering processes. The preparation of thin films must therefore involve much lower temperatures, preferably not higher than 400-500 C. The consequences are very dear. It turned out that many of the recent studies on EuO thin films are suffering from sample quality problems, due to the presence of, e.g., trivalent Eu species (Eu 3 O 4 , Eu 2 O 3 ), oxygen vacancies, or even Eu metal clusters. Controlled doping of the EuO with trivalent rare-earth ions is also not trivial, since most often even the actual doping concentrations were not known. In fact, one could also question in this respect the

EuO and Gd-doped EuO thin films. Epitaxial growth and properties

Energy Technology Data Exchange (ETDEWEB)

Sutarto, Ronny

2009-07-06

Europium oxide (EuO) based materials exhibit a wealth of spectacular phenomena, including half-metallic ferromagnetism, metal-insulator transition, colossal magneto-resistance, large magneto-optical Kerr effect, tunable ferromagnetic ordering temperatures, and large and long-lived photo-induced conductivity. These extraordinary properties make EuO an ideal candidate for implementation in device applications, in particular, for spintronics. Most of the work in the past has been carried out on bulk EuO, but for device applications it is preferred to have the EuO in thin lm form. A urry of studies have therefore emerged in the last decade in order to explore a wide variety of preparation routes and to investigate the properties of the resulting EuO thin films. A recent highlight is the demonstration that doped EuO films can be fabricated on Si and GaN, thereby exhibiting the expected spin-polarized transport effects. Nevertheless, it is still far from a trivial task to prepare EuO thin films with well de ned properties. For bulk EuO, it is already known that stoichiometry is the key issue, and that the presence of small amounts of defects or impurities quickly lead to very large deviations of the material properties. In fact, to make bulk EuO to be stoichiometric one needs temperatures as high as 1800 C. It is obvious that such high temperatures are not compatible with device engineering processes. The preparation of thin films must therefore involve much lower temperatures, preferably not higher than 400-500 C. The consequences are very dear. It turned out that many of the recent studies on EuO thin films are suffering from sample quality problems, due to the presence of, e.g., trivalent Eu species (Eu{sub 3}O{sub 4}, Eu{sub 2}O{sub 3}), oxygen vacancies, or even Eu metal clusters. Controlled doping of the EuO with trivalent rare-earth ions is also not trivial, since most often even the actual doping concentrations were not known. In fact, one could also question in

Investigation of corrosion behavior of nitrogen doped and platinum/ruthenium doped diamond-like carbon thin films in Hank's solution

International Nuclear Information System (INIS)

Khun, N.W.; Liu, E.

2011-01-01

Undoped (DLC), nitrogen-doped (N-DLC) and platinum/ruthenium doped diamond-like carbon (PtRu-DLC) thin films were deposited on p-Si (100) substrates using a DC magnetron sputtering deposition system. The chemical composition, bonding structure, surface morphology and adhesion strength of the films were characterized using X-ray photoelectron spectroscopy (XPS), micro-Raman spectroscopy, atomic force microscopy (AFM) and micro-scratch test, respectively. The corrosion behavior of the films in a Hank's solution was investigated using potentiodynamic polarization test. The corrosion results revealed that the PtRu-DLC film had the highest corrosion potential among the films used in this study. Highlights: → DLC thin films were deposited on Si substrates via dc magnetron sputtering. → Some DLC films were doped with N and/or Pt/Ru. → The film corrosion behavior was studied in a Hank solution with polarization test. → The PtRu-DLC film showed the highest corrosion potential among the films studied.

Structural and photodegradation behaviors of Fe{sup 3+}-doping TiO{sub 2} thin films prepared by a sol–gel spin coating

Energy Technology Data Exchange (ETDEWEB)

Lin, Huey-Jiuan; Yang, Tien-Syh [Department of Materials Science and Engineering, National United University, 1 Lien-Da, Kung-Ching Li, Miao-Li 36003, Taiwan (China); Wang, Moo-Chin, E-mail: mcwang@kmu.edu.tw [Department of Fragrance and Cosmetic Science, Kaohsiung Medical University, 100 Shih-Chuan 1st Road, Kaohsiung 80782, Taiwan (China); Hsi, Chi-Shiung, E-mail: chsi@nuu.edu.tw [Department of Materials Science and Engineering, National United University, 1 Lien-Da, Kung-Ching Li, Miao-Li 36003, Taiwan (China)

2014-10-15

Highlights: • Pure and various Fe{sup 3+}-doped TiO{sub 2} thin films have been successfully fabricated. • The phase of all thin films was single phase of anatase TiO{sub 2} when calcined at 823 K. • The crystallinity of TiO{sub 2} thin films decreased as Fe{sup 3+}-doping increased. • The photodegradation of each sample increased as the irradiation time increased. • The photodegradation increased as Fe{sup 3+}-doping increased at a fixed irradiation time. - Abstract: Pure and various Fe{sup 3+}-doping TiO{sub 2} thin films have been successfully fabricated on glass substrate prepared by a sol–gel spin coating route. The structural and photodegradation behavior of these films after calcined at various temperatures for 1 h were investigated using X-ray diffraction (XRD), scanning electron microscopy (SEM), photoluminescence (PL) spectrum and degradation of 1.0 × 10{sup −5} M methylene blue solution. When all thin films after calcined at 823 K for 1 h, the crystalline phase are comprised only contained single phase of anatase TiO{sub 2}. The crystallinity of various Fe{sup 3+}-doping TiO{sub 2} thin films decreases with Fe{sup 3+}-doping concentration increased. The PL intensity of all thin films also decreases with Fe{sup 3+}-doping concentration increased. When all various Fe{sup 3+}-doping TiO{sub 2} thin films after calcined at 823 K for 1 h, the photodegradation of each sample increases with irradiation time increased. Moreover, the photodegradation also increases with Fe{sup 3+}-doping concentration increased when fixed at constant irradiation time.

Eu and Rb co-doped LiCaAlF6 scintillators for neutron detection

International Nuclear Information System (INIS)

Yamaji, Akihiro; Yanagida, Takayuki; Kawaguchi, Noriaki; Yokota, Yuui; Fujimoto, Yutaka; Kurosawa, Shunsuke; Pejchal, Jan; Watanabe, Kenichi; Yamazaki, Atsushi; Yoshikawa, Akira

2013-01-01

Eu and Rb co-doped LiCaAlF 6 (LiCAF) single crystals with different dopant concentrations were grown by the micro-pulling-down method for neutron detection. Their transmittance spectra showed strong absorption bands at 200–220 and 290–350 nm, and under 241 Am alpha-ray excitation, their radioluminescence spectra exhibited an intense emission peak at 373 nm that was attributed to the Eu 2+ 5d–4f transition. These results were consistent with those for the Rb-free Eu:LiCAF. The highest light yield among the grown crystals was 36,000 ph/n, which was 20% greater than that of the Rb-free crystal. In addition, the neutron-excited scintillation decay times were 650–750 ns slower than that of the Rb-free Eu:LiCAF. -- Highlights: •Eu and Rb co-doped LiCaAlF 6 crystals were grown by the micro-pulling down method. •Transmittance, photoluminescence and radioluminescence spectra were measured. •The light yields and scintillation decays were evaluated under 252 Cf neutron irradiation

Surface chemical and photocatalytic consequences of Ca-doping of BiFeO{sub 3} as probed by XPS and H{sub 2}O{sub 2} decomposition studies

Energy Technology Data Exchange (ETDEWEB)

Zaki, Mohamed I., E-mail: mizaki@link.net [Chemistry Department, Faculty of Science, Minia University, El-Minia 61519 (Egypt); Ramadan, Wegdan [Physics Department, Faculty of Science, Alexandria University, Alexandria 21511 (Egypt); Katrib, Ali [Chemistry Department, Faculty of Science, Kuwait University, P.O. Box 5969, Safat 13060 (Kuwait); Rabee, Abdallah I.M. [Chemistry Department, Faculty of Science, Minia University, El-Minia 61519 (Egypt)

2014-10-30

Graphical abstract: - Highlights: • BiFeO{sub 3} is a modest visible-light heterogeneous photocatalyst for H{sub 2}O{sub 2} decomposition. • The ferrite activity is promoted with Ca-doping up to 10 wt%-Ca. • Favourable consequences are enhanced surface metal redoxability and oxide basicity. • Furthering doping to >10 wt%-Ca retrogresses the ferrite photocatalytic activity. • A retrogressive doping consequence is bulk phase separation of α(γ)-Fe{sub 2}O{sub 3}. - Abstract: Pure and Ca-doped Bi{sub 1−x}Ca{sub x}FeO{sub 3} samples were prepared with x = 0.0–0.2, adopting a sol–gel method. Previously reported studies performed on similarly composed and prepared samples revealed that Ca-doping, above solubility limit (namely at ≥10%-Ca), results in phase separation and formation of BiFeO{sub 3}/α(γ)-Fe{sub 2}O{sub 3} nanocomposite particles. Hetero p/n nanojunctions thus established were considered to help separating photo-generated electron–hole pairs and, therefore, explain consequent promotion of photo-Fenton catalytic activity of BiFeO{sub 3} towards methylene blue degradation in presence of H{sub 2}O{sub 2} additive. However, the encompassed decomposition of H{sub 2}O{sub 2} was not addressed. To bridge this gap of knowledge, the present investigation was designed to assess Ca-doping-effected surface chemical modifications and gauge its impact on the heterogeneous photo-/thermo-catalytic activity of BiFeO{sub 3} towards H{sub 2}O{sub 2} decomposition, by means of X-ray photoelectron spectroscopy (XPS) and H{sub 2}O{sub 2} decomposition gravimetry. XPS results revealed generation of high binding energy Bi 4f and Fe 2p states, as well as enhancement of the surface basicity, upon doping to 10%-Ca. These surface chemical consequences are rendered hardly detectable upon further increase of the dopant magnitude to 20%-Ca. In parallel, the H{sub 2}O{sub 2} decomposition activity of the ferrite, under natural visible light, is enhanced to optimize

Low-Concentration Indium Doping in Solution-Processed Zinc Oxide Films for Thin-Film Transistors

Directory of Open Access Journals (Sweden)

Xue Zhang

2017-07-01

Full Text Available We investigated the influence of low-concentration indium (In doping on the chemical and structural properties of solution-processed zinc oxide (ZnO films and the electrical characteristics of bottom-gate/top-contact In-doped ZnO thin-film transistors (TFTs. The thermogravimetry and differential scanning calorimetry analysis results showed that thermal annealing at 400 °C for 40 min produces In-doped ZnO films. As the In content of ZnO films was increased from 1% to 9%, the metal-oxygen bonding increased from 5.56% to 71.33%, while the metal-hydroxyl bonding decreased from 72.03% to 9.63%. The X-ray diffraction peaks and field-emission scanning microscope images of the ZnO films with different In concentrations revealed a better crystalline quality and reduced grain size of the solution-processed ZnO thin films. The thickness of the In-doped ZnO films also increased when the In content was increased up to 5%; however, the thickness decreased on further increasing the In content. The field-effect mobility and on/off current ratio of In-doped ZnO TFTs were notably affected by any change in the In concentration. Considering the overall TFT performance, the optimal In doping concentration in the solution-processed ZnO semiconductor was determined to be 5% in this study. These results suggest that low-concentration In incorporation is crucial for modulating the morphological characteristics of solution-processed ZnO thin films and the TFT performance.

Photovoltaic properties of in-doped CDTE thin films deposited on metallic substrates

International Nuclear Information System (INIS)

Wagah F Mohamad; Khalid K Mohammed

2006-01-01

CDTE is a promising photovoltaic material due to its nearly optimum band gap and high optical absorption coefficient. This study looks into the effect of indium doping of the CdTe thin film deposited on stainless steel substrate. The conventional cells are usually manufactured on glass substrate and offer no weight advantage over single crystal cells. Since the metal foil support can be as thin as (40-60) μm and the weight saving is significant. The spectral response of the photo current with and without indium doping was studied in detail and compared with theory. The sub gap response of the resulted structure is particularly strong and extends to wavelengths up to 1000 nm

Structural, morphological and optical properties of Na and K dual doped CdS thin film

International Nuclear Information System (INIS)

Mageswari, S.; Dhivya, L.; Palanivel, Balan; Murugan, Ramaswamy

2012-01-01

Highlights: ► Effect of incorporation of Na, K and Na,K dual dopants into CdS thin film was investigated. ► Thin films were prepared by simple chemical bath deposition technique. ► The XRD analysis revealed cubic phase for all the investigated films. ► AFM analysis revealed uniform surface with crack free and densely packed morphology for CdS:Na,K film. ► The band gap value increases for CdS:Na, CdS:K and CdS:Na,K thin films compared to CdS film. - Abstract: CdS, sodium doped CdS (CdS:Na), potassium doped CdS (CdS:K) and sodium and potassium dual doped CdS (CdS:Na,K) thin films were deposited on glass substrate by chemical bath deposition (CBD) technique. Structural, morphological and optical properties of the as-grown films were characterised using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDAX), atomic force microscopy (AFM) and ultraviolet visible (UV–VIS) spectroscopy. The XRD analysis revealed cubic phase for ‘as-deposited’ CdS, CdS:Na, CdS:K and CdS:Na,K dual doped thin films. AFM analysis revealed uniform film surface with crack free and densely packed morphology for CdS:Na,K film. The absorption edge in the optical absorption spectra shifts towards the shorter wavelength for CdS:Na, CdS:K and CdS:Na,K thin films compared to CdS film. The optical band gap of CdS, CdS:Na, CdS:K and CdS:Na,K thin films was found to be 2.31, 2.35, 2.38 and 2.34 eV, respectively.

A Rapid Method for Deposition of Sn-Doped GaN Thin Films on Glass and Polyethylene Terephthalate Substrates

Science.gov (United States)

Pat, Suat; Özen, Soner; Korkmaz, Şadan

2018-01-01

We report the influence of Sn doping on microstructure, surface, and optical properties of GaN thin films deposited on glass and polyethylene terephthalate (PET) substrate. Sn-doped GaN thin films have been deposited by thermionic vacuum arc (TVA) at low temperature. TVA is a rapid deposition technology for thin film growth. Surface and optical properties of the thin films were presented. Grain size, height distribution, roughness values were determined. Grain sizes were calculated as 20 nm and 13 nm for glass and PET substrates, respectively. Nano crystalline forms were shown by field emission scanning electron microscopy. Optical band gap values were determined by optical methods and photoluminescence measurement. The optical band gap values of Sn doped GaN on glass and PET were determined to be approximately ˜3.40 eV and ˜3.47 eV, respectively. As a result, TVA is a rapid and low temperature deposition technology for the Sn doped GaN deposited on glass and PET substrate.

Cathodoluminescence and Raman characteristics of CaSO{sub 4}:Tm{sup 3+}, Cu phosphor

Energy Technology Data Exchange (ETDEWEB)

Ekdal, E. [Ege University, Institute of Nuclear Sciences, 35100 Bornova, İzmir (Turkey); Guinea, J. Garcia [MuseoNacional Ciencias Naturales, Jose Gutierrez Abascal 2, Madrid 28006 (Spain); Kelemen, A. [Centre for Energy Research, Radiation Safety Laboratory, P.O. Box 49, H-1121 Budapest (Hungary); Ayvacikli, M. [Celal Bayar University, Faculty of Arts and Sciences, Department of Physics, Muradiye, Manisa (Turkey); Canimoglu, A. [Nigde University, Faculty of Arts and Sciences, Department of Physics, Nigde (Turkey); Jorge, A. [MuseoNacional Ciencias Naturales, Jose Gutierrez Abascal 2, Madrid 28006 (Spain); Karali, T. [Ege University, Institute of Nuclear Sciences, 35100 Bornova, İzmir (Turkey); Can, N., E-mail: cannurdogan@yahoomail.com [Celal Bayar University, Faculty of Arts and Sciences, Department of Physics, Muradiye, Manisa (Turkey); Physics Department, Jazan University, P.O. Box 114, 45142 Jazan (Saudi Arabia)

2015-05-15

The physical characterization and phosphor emission spectra are presented for CaSO{sub 4} doped with Tm and Cu. All spectral wavelengths are related to electronic transitions of Tm{sup 3+} ions. The powder X-ray diffraction pattern showed that the compound exhibits orthorhombic structure and all reflections were indexed without any other secondary impurity phases. Chemical and structural properties of the samples have been characterized by means of Raman spectroscopy and environmental scanning electron microscope (ESEM) with an attached X-ray energy dispersive system (EDS). Group frequencies concept is essential point to the interpretation of the bands due to the main SO{sub 4} vibrational units and these displayed main characteristic intensive Raman bands including typical strong intensity at 1016 cm{sup −1} that corresponds to ν{sub 1}SO{sub 4} vibrational mode. From the spatially-resolved cathodoluminescence (CL) spectrum, main emission bands of Tm{sup 3+} centered at 346, 362, and 452 nm, due to the respective transitions of {sup 3}P{sub 0}→{sup 3}H{sub 4}, {sup 1}D{sub 2}→{sup 3}H{sub 6}, {sup 1}D{sub 2}→{sup 3}F{sub 4} were clearly identified. The study is novel as no such CL-ESEM data are available for this doped compound. - Highlights: • Characteristic and cathodoluminescence properties of CaSO{sub 4}:Tm{sup 3+}, Cu have been investigated. • Several sharp and strong CL emission bands due to rare earth ion were observed for rare earth doped sample. • The nature and limitation of the interaction between CaSO{sub 4} and the activator ions were discussed.

Thermal Quenching of Photoluminescence from Er-Doped GaN Thin Films

National Research Council Canada - National Science Library

Seo, J. T; Hoemmerich, U; Lee, D. C; Heikenfeld, J; Steckl, A. J; Zavada, J. M

2002-01-01

The green (537 and 558 nm) and near infrared (1.54 micrometers) photoluminescence (PL) spectra of Er-doped GaN thin films have been investigated as a function of temperature, excitation wavelength, and pump intensity...

Effect of Ag doping on opto-electrical properties of CdS thin films for solar cell applications

International Nuclear Information System (INIS)

Nazir, Adnan; Toma, Andrea; Shah, Nazar Abbas; Panaro, Simone; Butt, Sajid; Sagar, Rizwan ur Rehman; Raja, Waseem; Rasool, Kamran; Maqsood, Asghari

2014-01-01

Highlights: • Polycrystalline CdS thin films are fabricated by means of Close Spaced Sublimation technique. • Ag is doped by simple ion-exchange technique in order to reduce resistivity of CdS thin films. • Remarkable reduction in resistivity without introducing many transparency losses. - Abstract: Cadmium sulfide (CdS) polycrystalline thin films of different thicknesses (ranging from 370 nm to 750 nm) were fabricated on corning glass substrates using Close Spaced Sublimation (CSS) technique. Optical and electrical investigation revealed that CdS thin films show an appreciable transparency (50–70% transmission) in visible range and a highly resistive behavior (10 6 Ω cm). Samples were doped by silver (Ag) at different concentrations, using ion exchange technique, in order to reduce the resistivity of CdS thin films and to improve their efficiency as a window layer for solar cell application. The doping of Ag in pure CdS thin films resulted into an increase of surface roughness and a decrease both in electrical resistivity and in transparency. By optimizing annealing parameters, we were able to properly control the optical properties of the present system. In fact, the Ag doping of pure CdS films has led to a decrease of the sample resistivity by three orders of magnitude (10 3 Ω cm) against a 20% cut in optical transmission

All-organic polymer-dispersed liquid crystal light-valves integrated with electroactive anthraquinone-2-sulfonate-doped polypyrrole thin films as driving electrodes

International Nuclear Information System (INIS)

Wang, Pen-Cheng; Yu, Jing-Yu; Li, Kuan-Hsun

2011-01-01

Highlights: → Fabrication of flexible semi-transparent all-polymer electrodes under ambient conditions without using a CVD system. → Characterization of the above electrodes based on anthraquinone-2-sulfonate-doped polypyrrole thin films. → Demonstration of all-organic liquid crystal light-valves with polypyrrole thin films as the driving electrodes. - Abstract: All-organic PDLC (polymer-dispersed liquid crystal) light-valves using all-polymer conductive substrates containing thin films of polypyrrole doped with anthraquinone-2-sulfonate (AQSA - ) as the driving electrodes were fabricated in this study. The all-polymer conductive substrates were prepared under ambient conditions by in situ depositing polypyrrole thin films on blank flexible poly(ethylene terephthalate), or PET, substrates from aqueous media in which oxidative polymerization of pyrrole was taking place. The obtained flexible all-polymer conductive substrates were semi-transparent with cohesive coatings of AQSA - doped polypyrrole thin films (thickness ∼55 nm). The all-polymer flexible conductive substrates had sheet resistivity ∼40 kΩ □ -1 and T% transparency against air ∼78% at 600 nm. The light-valves fabricated using the above all-polymer conductive substrates showed ∼50% transparency against air at 600 nm when 4 V μm -1 electric field was applied.

A short literature survey on iron and cobalt ion doped TiO{sub 2} thin films and photocatalytic activity of these films against fungi

Energy Technology Data Exchange (ETDEWEB)

Tatl Latin-Small-Letter-Dotless-I dil, Ilknur [Department of Chemistry, Faculty of Science, Karadeniz Technical University, 61080 Trabzon (Turkey); Bacaks Latin-Small-Letter-Dotless-I z, Emin [Department of Physics, Faculty of Science, Karadeniz Technical University, 61080 Trabzon (Turkey); Buruk, Celal Kurtulus [Department of Microbiology, Faculty of Medicine, Karadeniz Technical University, 61080 Trabzon (Turkey); Breen, Chris [Materials and Engineering Research Institution, Sheffield Hallam University, Sheffield S1 1WB (United Kingdom); Soekmen, Muenevver, E-mail: msokmen@ktu.edu.tr [Department of Chemistry, Faculty of Science, Karadeniz Technical University, 61080 Trabzon (Turkey)

2012-03-15

Highlights: Black-Right-Pointing-Pointer Co or Fe doped TiO{sub 2} thin films were prepared by sol-gel method. Black-Right-Pointing-Pointer We obtained lower E{sub g} values for Fe-doped and Co-TiO{sub 2} thin films. Black-Right-Pointing-Pointer Doping greatly affected the size and shape of the TiO{sub 2} nanoparticles. Black-Right-Pointing-Pointer Photocatalytic killing effect of the doped TiO{sub 2} thin films on C. albicans and A. niger was significantly higher than undoped TiO{sub 2} thin film for short exposure periods. - Abstract: In this study, a short recent literature survey which concentrated on the usage of Fe{sup 3+} or Co{sup 2+} ion doped TiO{sub 2} thin films and suspensions were summarized. Additionally, a sol-gel method was used for preparation of the 2% Co or Fe doped TiO{sub 2} thin films. The surface of the prepared materials was characterised using scanning-electron microscopy (SEM) combined with energy dispersive X-ray (EDX) analysis and band gap of the films were calculated from the transmission measurements that were taken over the range of 190 and 1100 nm. The E{sub g} value was 3.40 eV for the pure TiO{sub 2}, 3.00 eV for the Fe-doped TiO{sub 2} film and 3.25 eV for Co-TiO{sub 2} thin film. Iron or cobalt doping at lower concentration produce more uniformed particles and doping greatly affected the size and shape of the TiO{sub 2} nanoparticles. Photocatalytic killing effect of the 2% Co doped TiO{sub 2} thin film on Candida albicans was significantly higher than Fe doped TiO{sub 2} thin film for short and long exposure periods. Doped thin films were more effective on Aspergillus niger for short exposure periods.

Effect of Al-doped on physical properties of ZnO Thin films grown by spray pyrolysis on SnO2: F/glass

Directory of Open Access Journals (Sweden)

Castagné M.

2012-06-01

Full Text Available Transparent conducting thin films of aluminum-doped zinc oxide (ZnO:Al have been deposited on SnO2:F/glass by the chemical spray technique, starting from zinc acetate (CH3CO22Zn.2H2O and aluminum chloride AlCl3. The effect of changing the aluminum-to-zinc ratio y from 0 to 3 at.%, has been thoroughly investigated. It was found that the optical and electrical properties of Al doped ZnO films improved with the addition of aluminum in the spray solution until y=2%. At this Al doping percentage, the thin layers have a resistivity equal to 4.1 × 10−4 Ω.cm and a transmittance of about 90 % in the region [600-1000] nm. XRD patterns confirm that the films have polycristalline nature and a wurtzite (hexagonal structure which characterized with (100, (002 and (101 principal orientations. The undoped films have (002 as the preferred orientation but Al doped ones have (101 as the preferred orientation. Beyond y= 1%, peak intensities decrease considerably.

Effect of Mn doping on the structural and optical properties of ZrO2 thin films prepared by sol–gel method

International Nuclear Information System (INIS)

Berlin, I. John; Lekshmy, S. Sujatha; Ganesan, V.; Thomas, P.V.; Joy, K.

2014-01-01

Homogeneous and transparent Mn doped ZrO 2 thin films were prepared by sol–gel dip coating method. The films were annealed in air atmosphere at 500 °C. The X-ray diffraction pattern of the undoped ZrO 2 thin film revealed a mixed phase of tetragonal and monoclinic ZrO 2 with preferred orientations along T(111) and M(− 111). Grazing Incidence X-ray Diffraction of Mn doped ZrO 2 thin films reveals the introduction of Mn interstitial in ZrO 2 which stabilize the mixed phase of ZrO 2 into tetragonal phase. Atomic force microscope image shows the addition of catalyst (Mn) which stops isotropic agglomeration of particles, instead of anisotropic agglomeration that occurred resulting in growth of particles in certain direction. Average transmittances of > 70% (in UV–vis region) were observed for all samples. The optical band gap decreased from 5.72 to 4.52 eV with increase in Mn doping concentration. The reduced band gap is due to the introduction of impurity levels in the band gap, by incorporation of the metal ions into the ZrO 2 lattice. The d-electron of Mn (t 2g level) can easily overlap with the ZrO 2 's valence band (VB) because t 2g of Mn is very close to VB of ZrO 2 . This overlap caused a wide VB and consequently decreases the band gap of ZrO 2 . The photoluminescence (PL) spectrum of undoped zirconia thin film exhibits an intense near band edge emission peak at 392.5 nm (3.15 eV) and weak emission peaks at 304 (4.07 eV), 604 nm (2.05 eV) and 766 nm (1.61 eV). Additional PL peaks were observed for Mn doped ZrO 2 located at around 420, 447 (blue), 483 (blue) and 529 (green) nm respectively. These peaks were due to the redox properties of various valence state of Mn in ZrO 2 . The prepared Mn doped ZrO 2 thin films can be applied in optical devices. - Highlights: • Mn-doped ZrO 2 thin films were prepared by sol–gel dip coating method. • Introduction of Mn interstitial in ZrO 2 stabilizes ZrO 2 into tetragonal phase. • The optical band gap

Effect of Gallium Doping on the Characteristic Properties of Polycrystalline Cadmium Telluride Thin Film

Science.gov (United States)

Ojo, A. A.; Dharmadasa, I. M.

2017-08-01

Ga-doped CdTe polycrystalline thin films were successfully electrodeposited on glass/fluorine doped tin oxide substrates from aqueous electrolytes containing cadmium nitrate (Cd(NO3)2·4H2O) and tellurium oxide (TeO2). The effects of different Ga-doping concentrations on the CdTe:Ga coupled with different post-growth treatments were studied by analysing the structural, optical, morphological and electronic properties of the deposited layers using x-ray diffraction (XRD), ultraviolet-visible spectrophotometry, scanning electron microscopy, photoelectrochemical cell measurement and direct-current conductivity test respectively. XRD results show diminishing (111)C CdTe peak above 20 ppm Ga-doping and the appearance of (301)M GaTe diffraction above 50 ppm Ga-doping indicating the formation of two phases; CdTe and GaTe. Although, reductions in the absorption edge slopes were observed above 20 ppm Ga-doping for the as-deposited CdTe:Ga layer, no obvious influence on the energy gap of CdTe films with Ga-doping were detected. Morphologically, reductions in grain size were observed at 50 ppm Ga-doping and above with high pinhole density within the layer. For the as-deposited CdTe:Ga layers, conduction type change from n- to p- were observed at 50 ppm, while the n-type conductivity were retained after post-growth treatment. Highest conductivity was observed at 20 ppm Ga-doping of CdTe. These results are systematically reported in this paper.

Growth and properties of oxygen- and ion-doped Bi2Sr2CaCu2O8+δ single crystals

Science.gov (United States)

Mitzi, D. B.; Lombardo, L. W.; Kapitulnik, A.; Laderman, S. S.; Jacowitz, R. D.

1990-04-01

A directional solidification method for growing large single crystals in the Bi2Sr2CaCu2O8+δ system is reported. Ion doping, with replacement of La for Sr and Y for Ca, as well as oxygen doping in these crystals has been explored. Doped and undoped crystals have been characterized using microprobe analysis, x-ray diffraction, thermogravimetric analysis, and magnetic and Hall measurements. Ion doping results in little change of the superconducting transition for substitution levels below 20-25%, while beyond this level the Meissner signal broadens and the low-temperature Meissner signal decreases. Microprobe analysis and x-ray diffraction performed on these more highly substituted single crystals provide evidence for inhomogeneity and phase segregation into regions of distinct composition. Annealing unsubstituted crystals in increasing partial pressures of oxygen reversibly depresses the superconducting transition temperature from 90 (as made) to 77 K (oxygen pressure annealed), while the carrier concentrations, as determined from Hall effect measurements, increase from n=3.1(3)×1021 cm-3 (0.34 holes per Cu site) to 4.6(3)×1021 cm-3 (0.50 holes per Cu site). No degradation of the Meissner transition or other indications of inhomogeneity or phase segregation with doping are noted, suggesting that oxygen-doped Bi2Sr2CaCu2O8+δ is a suitable system for pursuing doping studies. The decrease in Tc with concentration for 0.34<=n<=0.50 indicates that a high-carrier-concentration regime exists in which Tc decreases with n and suggests that this decrease does not arise from material inhomogeneity or other materials problems. An examination of the variation of Tc with the density of states and lattice constants for all of the doped and undoped superconducting samples considered here indicates that changes in Tc with doping are primarily affected by changes in the density of states (or carrier concentration) rather than by structural variation induced by the doping.

Enhanced Charge Extraction of Li-Doped TiO2 for Efficient Thermal-Evaporated Sb2S3 Thin Film Solar Cells

Science.gov (United States)

Lan, Chunfeng; Luo, Jingting; Lan, Huabin; Fan, Bo; Peng, Huanxin; Zhao, Jun; Sun, Huibin; Zheng, Zhuanghao; Liang, Guangxing; Fan, Ping

2018-01-01

We provided a new method to improve the efficiency of Sb2S3 thin film solar cells. The TiO2 electron transport layers were doped by lithium to improve their charge extraction properties for the thermal-evaporated Sb2S3 solar cells. The Mott-Schottky curves suggested a change of energy band and faster charge transport in the Li-doped TiO2 films. Compared with the undoped TiO2, Li-doped mesoporous TiO2 dramatically improved the photo-voltaic performance of the thermal-evaporated Sb2S3 thin film solar cells, with the average power conversion efficiency (PCE) increasing from 1.79% to 4.03%, as well as the improved open-voltage (Voc), short-circuit current (Jsc) and fill factors. The best device based on Li-doped TiO2 achieved a power conversion efficiency up to 4.42% as well as a Voc of 0.645 V, which are the highest values among the reported thermal-evaporated Sb2S3 solar cells. This study showed that Li-doping on TiO2 can effectively enhance the charge extraction properties of electron transport layers, offering a new strategy to improve the efficiency of Sb2S3-based solar cells. PMID:29495612

Enhanced Charge Extraction of Li-Doped TiO2 for Efficient Thermal-Evaporated Sb2S3 Thin Film Solar Cells

Directory of Open Access Journals (Sweden)

Chunfeng Lan

2018-02-01

Full Text Available We provided a new method to improve the efficiency of Sb2S3 thin film solar cells. The TiO2 electron transport layers were doped by lithium to improve their charge extraction properties for the thermal-evaporated Sb2S3 solar cells. The Mott-Schottky curves suggested a change of energy band and faster charge transport in the Li-doped TiO2 films. Compared with the undoped TiO2, Li-doped mesoporous TiO2 dramatically improved the photo-voltaic performance of the thermal-evaporated Sb2S3 thin film solar cells, with the average power conversion efficiency (PCE increasing from 1.79% to 4.03%, as well as the improved open-voltage (Voc, short-circuit current (Jsc and fill factors. The best device based on Li-doped TiO2 achieved a power conversion efficiency up to 4.42% as well as a Voc of 0.645 V, which are the highest values among the reported thermal-evaporated Sb2S3 solar cells. This study showed that Li-doping on TiO2 can effectively enhance the charge extraction properties of electron transport layers, offering a new strategy to improve the efficiency of Sb2S3-based solar cells.

Effect of Co doping concentration on structural properties and optical parameters of Co-doped ZnO thin films by sol-gel dip-coating method.

Science.gov (United States)

Nam, Giwoong; Yoon, Hyunsik; Kim, Byunggu; Lee, Dong-Yul; Kim, Jong Su; Leem, Jae-Young

2014-11-01

The structural and optical properties of Co-doped ZnO thin films prepared by a sol-gel dip-coating method were investigated. X-ray diffraction analysis showed that the thin films were grown with a c-axis preferred orientation. The position of the (002) peak was almost the same in all samples, irrespective of the Co concentration. It is thus clear that Co doping had little effect on the position of the (002) peak. To confirm that Co2+ was substituted for Zn2+ in the wurtzite structure, optical measurements were conducted at room temperature by a UV-visible spectrometer. Three absorption peaks are apparent in the Co-doped ZnO thin films that do not appear for the undoped ZnO thin film. As the Co concentration was increased, absorption related to characteristic Co2+ transitions increased because three absorption band intensities and the area underneath the absorption wells between 500 and 700 nm increased with increasing Co concentration. The optical band gap and static dielectric constant decreased and the Urbach energy and extinction coefficient increased with increasing Co concentration.

Structural, optoelectronic, luminescence and thermal properties of Ga-doped zinc oxide thin films

International Nuclear Information System (INIS)

Shinde, S.S.; Shinde, P.S.; Oh, Y.W.; Haranath, D.; Bhosale, C.H.; Rajpure, K.Y.

2012-01-01

Highlights: ► The ecofriendly deposition of Ga-doped zinc oxide. ► Influence of Ga doping onto physicochemical properties in aqueous media. ► Electron–phonon coupling by Raman. ► Chemical bonding structure and valence band analysis by XPS. - Abstract: Ga-doped ZnO thin films are synthesized by chemical spray pyrolysis onto corning glass substrates in aqueous media. The influence of gallium doping on to the photoelectrochemical, structural, Raman, XPS, morphological, optical, electrical, photoluminescence and thermal properties have been investigated in order to achieve good quality films. X-ray diffraction study depicts the films are polycrystalline and fit well with hexagonal (wurtzite) crystal structure with strong orientations along the (0 0 2) and (1 0 1) planes. Presence of E 2 high mode in Raman spectra indicates that the gallium doping does not change the wurtzite structure. The coupling strength between electron and LO phonon has experimentally estimated. In order to understand the chemical bonding structure and electronic states of the Ga-doped ZnO thin films XPS analysis have been studied. SEM images shows the films are adherent, compact, densely packed with hexagonal flakes and spherical grains. Optical transmittance and reflectance measurements have been carried out. Room temperature PL spectra depict violet, blue and green emission in deposited films. The specific heat and thermal conductivity study shows the phonon conduction behavior is dominant in these polycrystalline films.

Realizing luminescent downshifting in ZnO thin films by Ce doping with enhancement of photocatalytic activity

Science.gov (United States)

Narayanan, Nripasree; Deepak, N. K.

2018-04-01

ZnO thin films doped with Ce at different concentration were deposited on glass substrates by spray pyrolysis technique. XRD analysis revealed the phase purity and polycrystalline nature of the films with hexagonal wurtzite geometry and the composition analysis confirmed the incorporation of Ce in the ZnO lattice in the case of doped films. Crystalline quality and optical transmittance diminished while electrical conductivity enhanced with Ce doping. Ce doping resulted in a red-shift of optical energy gap due to the downshift of the conduction band minimum after merging with Ce related impurity bands formed below the conduction band in the forbidden gap. In the room temperature photoluminescence spectra, UV emission intensity of the doped films decreased while the intensity of the visible emission band increased drastically implying the degradation in crystallinity as well as the incorporation of defect levels capable of luminescence downshifting. Ce doping showed improvement in photocatalytic efficiency by effectively trapping the free carriers and then transferring for dye degradation. Thus Ce doped ZnO thin films are capable of acting as luminescent downshifters as well as efficient photocatalysts.

Highly Yb-doped KGd(WO4)2 thin-film amplifier

NARCIS (Netherlands)

Yong, Yean Sheng; Aravazhi, S.; Vázquez-Córdova, Sergio Andrés; García Blanco, Sonia Maria; Pollnau, Markus

We report record-high small-signal gain of 1050 dB/cm at 981 nm wavelength in a KGd0.425Yb0.575(WO4)2 thin film. The sensitivity of gain to the shift of beam-focus position, which is critical under non-waveguiding conditions, is investigated.

Electric modulation of conduction in multiferroic Ca-doped BiFeO3 films

Science.gov (United States)

Yang, C.-H.; Seidel, J.; Kim, S. Y.; Rossen, P. B.; Yu, P.; Gajek, M.; Chu, Y. H.; Martin, L. W.; Holcomb, M. B.; He, Q.; Maksymovych, P.; Balke, N.; Kalinin, S. V.; Baddorf, A. P.; Basu, S. R.; Scullin, M. L.; Ramesh, R.

2009-06-01

Many interesting materials phenomena such as the emergence of high-Tc superconductivity in the cuprates and colossal magnetoresistance in the manganites arise out of a doping-driven competition between energetically similar ground states. Doped multiferroics present a tantalizing evolution of this generic concept of phase competition. Here, we present the observation of an electronic conductor-insulator transition by control of band-filling in the model antiferromagnetic ferroelectric BiFeO3 through Ca doping. Application of electric field enables us to control and manipulate this electronic transition to the extent that a p-n junction can be created, erased and inverted in this material. A `dome-like' feature in the doping dependence of the ferroelectric transition is observed around a Ca concentration of ~1/8, where a new pseudo-tetragonal phase appears and the electric modulation of conduction is optimized. Possible mechanisms for the observed effects are discussed on the basis of the interplay of ionic and electronic conduction. This observation opens the door to merging magnetoelectrics and magnetoelectronics at room temperature by combining electronic conduction with electric and magnetic degrees of freedom already present in the multiferroic BiFeO3.

Preparation of Aligned ZnO Nanorod Arrays on Sn-Doped ZnO Thin Films by Sonicated Sol-Gel Immersion Fabricated for Dye-Sensitized Solar Cell

Directory of Open Access Journals (Sweden)

I. Saurdi

2014-01-01

Full Text Available Aligned ZnO Nanorod arrays are deposited on the Sn-doped ZnO thin film via sonicated sol-gel immersion method. The structural, optical, and electrical properties of the Sn-doped ZnO thin films were investigated. Results show that the Sn-doped ZnO thin films with small grain size (~20 nm, high average transmittance (96% in visible region, and good resistivity 7.7 × 102 Ω·cm are obtained for 2 at.% Sn doping concentration. The aligned ZnO nanorod arrays with large surface area were also obtained for 2 at.% Sn-doped ZnO thin film. They were grown on sol-gel derived Sn-doped ZnO thin film, which acts as a seed layer, via sonicated sol-gel immersion method. The grown aligned ZnO nanorod arrays show high transmittance at visible region. The fabricated dye-sensitised solar cell based on the 2.0 at.% Sn-doped ZnO thin film with aligned ZnO nanorod arrays exhibits improved current density, open-circuit voltage, fill factor, and conversion efficiency compared with the undoped ZnO and 1 at.% Sn-doped ZnO thin films.

Nanostructured nickel doped β-V{sub 2}O{sub 5} thin films for supercapacitor applications

Energy Technology Data Exchange (ETDEWEB)

Jeyalakshmi, K. [Department of Physics, PSNA College of Engineering and Technology, Dindigul 624622 (India); Vijayakumar, S. [Department of Physics, Gandhigram Rural Institute, Gandhigram 624302 (India); Purushothaman, K.K. [Department of Physics, TRP Engineering College, Trichy (India); Muralidharan, G., E-mail: muralg@rediffmail.com [Department of Physics, Gandhigram Rural Institute, Gandhigram 624302 (India)

2013-07-15

Graphical abstract: - Highlights: • Nanorod with pores has been observed for 5 wt.% nickel doped β-V{sub 2}O{sub 5} thin films. • Film with 5 wt.% of nickel exhibits a specific capacitance of 417 F g{sup −1}. • These films exhibit high energy density. • The charge transfer resistance is 103 Ω. - Abstract: Interesting thin film electrodes of nickel doped vanadium pentoxide with different levels of doping (2.5–10 wt.%) are prepared on FTO and glass substrate at 300 °C using sol–gel spin coating method. The structural and morphological studies are made to understand the nature of the surface of the thin films. The electrochemical characteristics have been investigated through cyclic voltammetry and ac impedance spectroscopy measurements. The doping of nickel with β-V{sub 2}O{sub 5} has led to enhanced intercalation and deintercalation of ions. β-V{sub 2}O{sub 5} films with 5 wt.% of Ni exhibit the maximum specific capacitance of 417 F/g at a scan rate of 5 mV/s, with a good cyclic stability making it a promising candidate for supercapacitor application.

Characterization of a new transparent-conducting material of ZnO doped ITO thin films

Science.gov (United States)

Ali, H. M.

2005-11-01

Thin films of indium tin oxide (ITO) doped with zinc oxide have the remarkable properties of being conductive yet still highly transparent in the visible and near-IR spectral ranges. The Electron beam deposi- tion technique is one of the simplest and least expensive ways of preparing. High-quality ITO thin films have been deposited on glass substrates by Electron beam evaporation technique. The effect of doping and substrate deposition temperature was found to have a significant effect on the structure, electrical and optical properties of ZnO doped ITO films. The average optical transmittance has been increased with in- creasing the substrate temperature. The maximum value of transmittance is greater than 84% in the visible region and 85% in the NIR region obtained for film with Zn/ITO = 0.13 at substrate temperature 200 °C. The dielectric constant, average excitation energy for electronic transitions (E o), the dispersion energy (E d), the long wavelength refractive index (n ), average oscillator wave length ( o) and oscillator strength S o for the thin films were determined and presented in this work.

Disorder effects in the S=1 antiferromagnetic spin ladder CaV{sub 2}O{sub 4}

Energy Technology Data Exchange (ETDEWEB)

Guitarra, S.R. [Colegio de Ciencias e Ingeniería, Universidad San Francisco de Quito, Quito (Ecuador); Caneiro, A. [Instituto Balseiro - Centro Atómico Bariloche, 8400 Bariloche (Argentina); Niebieskikwiat, D., E-mail: dniebieskikwiat@usfq.edu.ec [Colegio de Ciencias e Ingeniería, Universidad San Francisco de Quito, Quito (Ecuador)

2015-10-15

We study the physical properties of the antiferromagnetic spin ladder CaV{sub 2}O{sub 4} (CVO) and the Y-doped related compound Ca{sub 0.9}Y{sub 0.1}V{sub 2}O{sub 4}. In the latter, X-ray diffraction demonstrates the segregation of a small amount of a vanadium–perovskite impurity phase, leading to the formation of V vacancies within the main CVO-type structure. The 1D character of this calcium–vanadite enhances the influence of the vacancies on the electric and magnetic properties of Ca{sub 0.9}Y{sub 0.1}V{sub 2}O{sub 4}. Electrical transport is characterized by a variable-range hopping mechanism determined by the charging energy of nm-sized segments of V chains delimited by V vacancies, i.e. a Coulomb gap is formed at the Fermi level. These vacancies also locally affect the magnetic correlations, breaking the long-range AFM order observed in CaV{sub 2}O{sub 4} and producing exchange bias when the Y-doped sample is cooled with an applied magnetic field. - Highlights: • We study disorder effects in the quasi-1D antiferromagnetic spin ladder CaV{sub 2}O{sub 4}. • V vacancies in CaV{sub 2}O{sub 4} lead to variable-range hopping electrical transport. • The charging energy of nm-sized V chains determine the transport mechanism exponents. • V vacancies break the long-range AFM order of CaV{sub 2}O{sub 4}. • Local magnetic correlations in the vicinity of the defects produce exchange bias.

Effect of Al doping on phase formation and thermal stability of iron nitride thin films

Energy Technology Data Exchange (ETDEWEB)

Tayal, Akhil [Amity Center for Spintronic Materials, Amity University, Sector 125, Noida 201 303 (India); Gupta, Mukul, E-mail: mgupta@csr.res.in [Amity Center for Spintronic Materials, Amity University, Sector 125, Noida 201 303 (India); Pandey, Nidhi [Amity Center for Spintronic Materials, Amity University, Sector 125, Noida 201 303 (India); Gupta, Ajay [UGC-DAE Consortium for Scientific Research, University Campus, Khandwa Road, Indore 452 001 (India); Horisberger, Michael [Laboratory for Developments and Methods, Paul Scherrer Institut, CH-5232 Villigen PSI (Switzerland); Stahn, Jochen [Laboratory for Neutron Scattering and Imaging, Paul Scherrer Institut, CH-5232 Villigen PSI (Switzerland)

2015-11-25

In the present work, we systematically studied the effect of Al doping on the phase formation of iron nitride (Fe–N) thin films. Fe–N thin films with different concentration of Al (Al = 0, 2, 3, 6, and 12 at.%) were deposited using dc magnetron sputtering by varying the nitrogen partial pressure between 0 and 100%. The structural and magnetic properties of the films were studied using x-ray diffraction and polarized neutron reflectivity. It was observed that at the lowest doping level (2 at.% of Al), nitrogen rich non-magnetic Fe–N phase gets formed at a lower nitrogen partial pressure as compared to the un-doped sample. Interestingly, we observed that as Al doping is increased beyond 3 at.%, nitrogen rich non-magnetic Fe–N phase appears at higher nitrogen partial pressure as compared to un-doped sample. The thermal stability of films were also investigated. Un-doped Fe–N films deposited at 10% nitrogen partial pressure possess poor thermal stability. Doping of Al at 2 at.% improves it marginally, whereas, for 3, 6 and 12 at.% Al doping, it shows significant improvement. The obtained results have been explained in terms of thermodynamics of Fe–N and Al–N. - Highlights: • Doping effects of Al on Fe–N phase formation is studied. • Phase formation shows a non-monotonic behavior with Al doping. • Low doping levels of Al enhance and high levels retard the nitridation process. • Al doping beyond 3 at.% improve thermal stability of Fe–N films.

Tunable Yellow-Red Photoluminescence and Persistent Afterglow in Phosphors Ca4LaO(BO3)3:Eu3+ and Ca4EuO(BO3)3.

Science.gov (United States)

Chen, Zhen; Pan, Yuexiao; Xi, Luqing; Pang, Ran; Huang, Shaoming; Liu, Guokui

2016-11-07

In most Eu 3+ activated phosphors, only red luminescence from the 5 D 0 is obtainable, and efficiency is limited by concentration quenching. Herein we report a new phosphor of Ca 4 LaO(BO 3 ) 3 :Eu 3+ (CLBO:Eu) with advanced photoluminescence properties. The yellow luminescence emitted from the 5 D 1,2 states is not thermally quenched at room temperature. The relative intensities of the yellow and red emission bands depend strongly on the Eu 3+ doping concentration. More importantly, concentration quenching of Eu 3+ photoluminescence is absent in this phosphor, and the stoichiometric compound of Ca 4 EuO(BO 3 ) 3 emits stronger luminescence than the Eu 3+ doped compounds of CLBO:Eu; it is three times stronger than that of a commercial red phosphor of Y 2 O 3 :Eu 3+ . Another beneficial phenomenon is that ligand-to-metal charge transfer (CT) transitions occur in the long UV region with the lowest charge transfer band (CTB) stretched down to about 3.67 eV (∼330 nm). The CT transitions significantly enhance Eu 3+ excitation, and thus result in stronger photoluminescence and promote trapping of excitons for persistent afterglow emission. Along with structure characterization, optical spectra and luminescence dynamics measured under various conditions as a function of Eu 3+ doping, temperature, and excitation wavelength are analyzed for a fundamental understanding of electronic interactions and for potential applications.

Structural, optical and magnetic properties of nanocrystalline Co-doped ZnO thin films grown by sol-gel

Energy Technology Data Exchange (ETDEWEB)

Kayani, Zohra Nazir; Shah, Iqra; Zulfiqar, Bareera; Sabah, Aneeqa [Lahore College for Women Univ., Lahore (Pakistan); Riaz, Saira; Naseem, Shahzad [Univ. of the Punjab, Lahore (Pakistan). Centre of Excellence in Solid State Physics

2018-04-01

Cobalt-doped ZnO thin films have been deposited using a sol-gel route by changing the number of coats on the substrate from 6 to 18. This project deals with various film thicknesses by increasing the number of deposited coats. The effect of thickness on structural, magnetic, surface morphology and optical properties of Co-doped ZnO thin film was studied. The crystal structure of the Co-doped ZnO films was investigated by X-ray diffraction. The films have polycrystalline wurtzite hexagonal structures. A Co{sup 2+} ion takes the place of a Zn{sup 2+} ion in the lattice without creating any distortion in its hexagonal wurtzite structure. An examination of the optical transmission spectra showed that the energy band gap of the Co-doped ZnO films increased from 3.87 to 3.97 eV with an increase in the number of coatings on the substrate. Ferromagnetic behaviour was confirmed by measurements using a vibrating sample magnetometer. The surface morphology of thin films was assessed by scanning electron microscope. The grain size on the surface of thin films increased with an increase in the number of coats.

Structural, optical and magnetic properties of Mn doped ZnO thin films prepared by pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Aravind, Arun, E-mail: aruncusat@gmail.com [Nanophotonic and Optoelectronic Devices Laboratory, Department of Physics, Cochin University of Science and Technology, Kochi 682 022, Kerala (India); Jayaraj, M.K., E-mail: mkj@cusat.ac.in [Nanophotonic and Optoelectronic Devices Laboratory, Department of Physics, Cochin University of Science and Technology, Kochi 682 022, Kerala (India); Kumar, Mukesh; Chandra, Ramesh [Nano Science Laboratory, Institute Instrumentation Centre, IIT Roorkee, Roorkee 247 667, Uttarakhand (India)

2012-08-01

Highlights: Black-Right-Pointing-Pointer Defect induced Raman active modes in Mn doped ZnO thin films. Black-Right-Pointing-Pointer Room temperature ferromagnetism. Black-Right-Pointing-Pointer Morphological variations of ZnO thin films with Mn doping. Black-Right-Pointing-Pointer Variation of refractive index of ZnO thin films with Mn doping. - Abstract: Zn{sub 1-x}Mn{sub x}O thin films were grown by pulsed laser deposition. The phase purity and the structure were confirmed by X-ray diffraction studies. The films have a transmittance more than 80% in the visible region. The refractive index of Zn{sub 0.90}Mn{sub 0.10}O films is found to be 1.77 at 550 nm. The presence of non-polar E{sub 2}{sup high} and E{sub 2}{sup low} Raman modes in thin films indicates that 'Mn' doping does not change the wurtzite structure of ZnO. Apart from the normal modes of ZnO the Zn{sub 1-x}Mn{sub x}O ceramic targets show two additional modes at 332 cm{sup -1} (I{sub 1}) and 524 cm{sup -1} (I{sub 2}). The broad Raman peaks (340-600 cm{sup -1}) observed Zn{sub 0.90}Mn{sub 0.10}O thin films can be deconvoluted into five peaks, denoted as P{sub 1}-P{sub 5}. The possible origins of Raman peaks in Zn{sub 1-x}Mn{sub x}O films are the structural disorder and morphological change caused by the Mn dopant. The B{sub 1}{sup low}, {sup 2}B{sub 1}{sup low}, B{sub 1}{sup high} and A{sub 1}{sup LO} modes as well as the surface phonon mode have been observed in heavily Mn-doped ZnO films. Zn{sub 0.98}Mn{sub 0.02}O thin film shows room temperature ferromagnetism. The saturation magnetic moment of the Zn{sub 0.98}Mn{sub 0.02}O thin film is 0.42{mu}{sub B}/Mn atom. The undoped ZnO film prepared under the same condition shows diamagnetic nature. At higher doping concentrations the formation of Mn clusters suppress the room temperature ferromagnetism in Zn{sub 1-x}Mn{sub x}O thin films and shows paramagnetism. XPS confirms the incorporation of Mn{sup 2+} into the ZnO lattice.

Study of copper doping effects on structural, optical and electrical properties of sprayed ZnO thin films

International Nuclear Information System (INIS)

Mhamdi, A.; Mimouni, R.; Amlouk, A.; Amlouk, M.; Belgacem, S.

2014-01-01

Highlights: • The sprayed Cu-doped ZnO thin layers films were well crystallised in hexagonal wurtzite phase. • Nanoncrystallites on clusters were observed whose density decreases especially at 2% Cu content. • This parallel circuit R–C represents the contribution of the grain boundaries delineating the oriented columnar microcrystallites along c-axis. - Abstract: Copper-doped zinc oxide thin films (ZnO:Cu) at different percentages (1–3%) were deposited on glass substrates using a chemical spray technique. The effect of Cu concentration on the structural, morphology and optical properties of the ZnO:Cu thin films were investigated. XRD analysis revealed that all films consist of single phase ZnO and were well crystallised in würtzite phase with the crystallites preferentially oriented towards (0 0 2) direction parallel to c-axis. The Film surface was analyzed by contact atomic force microscopy (AFM) in order to understand the effect of the doping on the surface structure. Doping by copper resulted in a slight decrease in the optical band gap energy of the films and a noticeably change in optical constants. From the spectroscopy impedance analysis we investigated the frequency relaxation phenomenon and the circuit equivalent circuit of such thin layers. Finally, all results have been discussed in terms of the copper doping concentration

NIR to visible upconversion in Er3+/Yb3+ co-doped CaYAl3O7 phosphor obtained by solution combustion process

International Nuclear Information System (INIS)

Singh, Vijay; Rai, Vineet Kumar; Al-Shamery, Katharina; Nordmann, Joerg; Haase, Markus

2011-01-01

Using the combustion synthesis, CaYAl 3 O 7 :Er 3+ phosphor powders co-doped with Yb 3+ have been prepared at low temperatures (550 o C) in a few minutes. Formation of the compound was confirmed by X-ray powder diffraction. Near-infrared to visible upconversion fluorescence emission in the Er 3+ doped CaYAl 3 O 7 phosphor powder has been observed. The effect of co-doping with triply ionized ytterbium in the CaYAl 3 O 7 :Er 3+ phosphor has been studied and the process involved is discussed. - Highlights: → The green emitting up-conversion CaYAl 3 O 7 :Er 3+ phosphor powders co-doped with Yb 3+ have been prepared by easy combustion method. → The combustion method is a simple, energy saving, fast and economical viable process. → The luminescence intensity in the co-doped phosphor is enhanced by several times compared to that of the singly (Er 3+ ) doped phosphor.

Growth and in-plane magnetic anisotropy of inverse spinel Co{sub 2}MnO{sub 4} thin films

Energy Technology Data Exchange (ETDEWEB)

Koo, Taeyeong; Kim, Jaeyeong [Pohang University of Science and Technology, Pohang (Korea, Republic of); Song, Jonghyun [Chungnam National University, Daejeon (Korea, Republic of)

2014-11-15

Epitaxial Co{sub 2}MnO{sub 4} thin films were grown on Nb(0.1wt.)-doped SrTiO{sub 3} single-crystal substrates with (100) and (110) crystal orientations by using pulsed laser deposition. Their crystal structures and magnetic properties were investigated. Both samples exhibited ferrimagnetic transitions with enhanced transition temperatures. Isotropic M-H loops were observed on the in-plane surface of Co{sub 2}MnO{sub 4}(00l) grown on Nb(0.1wt)-doped SrTiO{sub 3}(100). Strong magnetic anisotropy was observed on the in-plane surface for Co{sub 2}MnO{sub 4} (ll0) grown on Nb(0.1wt)-doped SrTiO{sub 3}(110). A magnetic easy axis existed along the elongated tetragonal direction. This was attributed to the strong interplay between the spin and lattice degrees of freedom in the Co{sub 2}MnO{sub 4} thin film.

Doping properties of ZnO thin films for photovoltaic devices grown by URT-IP (ion plating) method

International Nuclear Information System (INIS)

Iwata, K.; Sakemi, T.; Yamada, A.; Fons, P.; Awai, K.; Yamamoto, T.; Matsubara, M.; Tampo, H.; Sakurai, K.; Ishizuka, S.; Niki, S.

2004-01-01

The Uramoto-gun with Tanaka magnetic field (URT)-ion plating (IP) method is a novel ion plating technique for thin film deposition. This method offers the advantage of low-ion damage, low deposition temperatures, large area deposition and high growth rates. Ga-doped ZnO thin films were grown using the URT-IP method, and the doping properties were evaluated. The opposing goals of low Ga composition and low resistivity are required for industrial applications of transparent conductive oxide (TCO). We have carried out a comparison between the carrier concentration and Ga atomic concentration in Ga-doped ZnO thin films and found the trade-off point for optimal TCO performance. The optimum growth conditions were obtained using a 3% Ga 2 O 3 content ZnO target

Anion-induced N-doping of naphthalenediimide polymer semiconductor in organic thin-film transistors

KAUST Repository

Han, Yang

2018-03-13

Molecular doping is an important strategy to improve the charge transport properties of organic semiconductors in various electronic devices. Compared to p-type dopants, the development of n-type dopants is especially challenging due to poor dopant stability against atmospheric conditions. In this article, we report the n-doping of the milestone naphthalenediimide-based conjugated polymer P(NDI2OD-T2) in organic thin film transistor devices by soluble anion dopants. The addition of the dopants resulted in the formation of stable radical anions in thin films, as confirmed by EPR spectroscopy. By tuning the dopant concentration via simple solution mixing, the transistor parameters could be readily controlled. Hence the contact resistance between the electrodes and the semiconducting polymer could be significantly reduced, which resulted in the transistor behaviour approaching the desirable gate voltage-independent model. Reduced hysteresis was also observed, thanks to the trap filling by the dopant. Under optimal doping concentrations the channel on-current was increased several fold whilst the on/off ratio was simultaneously increased by around one order of magnitude. Hence doping with soluble organic salts appears to be a promising route to improve the charge transport properties of n-type organic semiconductors.

Anion-induced N-doping of naphthalenediimide polymer semiconductor in organic thin-film transistors

KAUST Repository

Han, Yang; Fei, Zhuping; Lin, Yen-Hung; Martin, Jaime; Tuna, Floriana; Anthopoulos, Thomas D.; Heeney, Martin

2018-01-01

Molecular doping is an important strategy to improve the charge transport properties of organic semiconductors in various electronic devices. Compared to p-type dopants, the development of n-type dopants is especially challenging due to poor dopant stability against atmospheric conditions. In this article, we report the n-doping of the milestone naphthalenediimide-based conjugated polymer P(NDI2OD-T2) in organic thin film transistor devices by soluble anion dopants. The addition of the dopants resulted in the formation of stable radical anions in thin films, as confirmed by EPR spectroscopy. By tuning the dopant concentration via simple solution mixing, the transistor parameters could be readily controlled. Hence the contact resistance between the electrodes and the semiconducting polymer could be significantly reduced, which resulted in the transistor behaviour approaching the desirable gate voltage-independent model. Reduced hysteresis was also observed, thanks to the trap filling by the dopant. Under optimal doping concentrations the channel on-current was increased several fold whilst the on/off ratio was simultaneously increased by around one order of magnitude. Hence doping with soluble organic salts appears to be a promising route to improve the charge transport properties of n-type organic semiconductors.

Role of vacancy defects in Al doped ZnO thin films for optoelectronic devices

Science.gov (United States)

Rotella, H.; Mazel, Y.; Brochen, S.; Valla, A.; Pautrat, A.; Licitra, C.; Rochat, N.; Sabbione, C.; Rodriguez, G.; Nolot, E.

2017-12-01

We report on the electrical, optical and photoluminescence properties of industry-ready Al doped ZnO thin films grown by physical vapor deposition, and their evolution after annealing under vacuum. Doping ZnO with Al atoms increases the carrier density but also favors the formation of Zn vacancies, thereby inducing a saturation of the conductivity mechanism at high aluminum content. The electrical and optical properties of these thin layered materials are both improved by annealing process which creates oxygen vacancies that releases charge carriers thus improving the conductivity. This study underlines the effect of the formation of extrinsic and intrinsic defects in Al doped ZnO compound during the fabrication process. The quality and the optoelectronic response of the produced films are increased (up to 1.52 mΩ \\cdotcm and 3.73 eV) and consistent with the industrial device requirements.

Effect of Ag doping on the properties of ZnO thin films for UV stimulated emission

Science.gov (United States)

Razeen, Ahmed S.; Gadallah, A.-S.; El-Nahass, M. M.

2018-06-01

Ag doped ZnO thin films have been prepared using sol-gel spin coating method, with different doping concentrations. Structural and morphological properties of the films have been investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM) techniques. Thin films have been optically pumped and stimulated emission has been observed with strong peaks in the UV region. The UV stimulated emission is found to be due to exciton-exciton scattering, and Ag doping promoted this process by increasing the excitons concentrations in the ZnO lattice. Output-input intensity relation and peak emission, FWHM, and quantum efficiency relations with pump intensity have been reported. The threshold for which stimulated emission started has been evaluated to be about 18 MW/cm2 with quantum efficiency of about 58.7%. Mechanisms explaining the role of Ag in enhancement of stimulated emission from ZnO thin films have been proposed.

The luminescence of CaWO4: Bi single crystals

International Nuclear Information System (INIS)

Zorenko, Yu.; Pashkovsky, M.; Voloshinovskii, A.; Kuklinski, B.; Grinberg, M.

2006-01-01

Influence of doping with Bi 3+ ions and Bi 3+ -Na + or Bi 3+ -Li + ions pairs on luminescence, emission kinetics and light yield of CaWO 4 crystals has been investigated. It has been shown that under excitation in the A-band at 272 and 287nm, related to the Bi 3+ ions absorption, the luminescence peaked at 468nm decaying with time τ=0.41μs is observed. For bismuth concentration 50-500ppm and the equimolar concentrations of the Bi 3+ ions accompanied by Na + or Li + ions compensators the significant suppression of the phosphorescence peaked at 520nm, related to the defect WO 3 -V O complex, and an improvement of scintillation characteristics of the CaWO 4 are noticed. Energy transfer from the defect WO 3 -V O and regular WO 4 2- oxy-anions to Bi 3+ ions have been observed at room temperatures and discussed

Thermal neutron imaging with rare-earth-ion-doped LiCaAlF6 scintillators and a sealed 252Cf source

International Nuclear Information System (INIS)

Kawaguchi, Noriaki; Yanagida, Takayuki; Fujimoto, Yutaka; Yokota, Yuui; Kamada, Kei; Fukuda, Kentaro; Suyama, Toshihisa; Watanabe, Kenichi; Yamazaki, Atsushi; Chani, Valery; Yoshikawa, Akira

2011-01-01

Thermal neutron imaging with Ce-doped LiCaAlF 6 crystals has been performed. The prototype of the neutron imager using a Ce-doped LiCaAlF 6 scintillating crystal and a position sensitive photomultiplier tube (PSPMT) which had 64 multi-channel anode was developed. The Ce-doped LiCaAlF 6 single crystal was grown by the Czochralski method. A plate with dimensions of a diameter of 50x2 mm 2 was cut from the grown crystal, polished, and optically coupled to PSPMT by silicone grease. The 252 Cf source ( 6 .

Effect of a thin layer of tris (8-hydroxyquinoline) aluminum doped with 4-(dicyanomethylene)-2-t-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl) on the chromaticity of white organic light-emitting devices

International Nuclear Information System (INIS)

Cheng Gang; Zhao Yi; Li Feng; Xie Wenfa; Liu Shiyong

2004-01-01

Efficient white organic light-emitting devices (OLEDs) are demonstrated by inserting a thin layer of tris (8-hydroxyquinoline) aluminum (Alq) doped with 4-(dicyanomethylene)-2-t-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl) (DCJTB) into N,N'-diphenyl-N,N'-bis(1-naphthyl)-(1,1'-biphenyl)-4,4'-diamine (NPB) layer. Alq without doping is used as an electron-transporting layer and 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (bathocuproine or BCP) as an exciton-blocking layer. NPB layers are separated by the doped Alq layer, the layer that sandwiched between BCP and doped Alq layers acts as a blue-emitting layer, and the other as a hole-transporting layer. The doped Alq layer acts as a red and green-emitting as well as chromaticity-tuning layer, whose thickness and position as well as the concentration of DCJTB in Alq permit the tuning of the device spectrum to achieve a balanced white emission with Commission Internationale De L'Eclairage (CIE) coordinates of (0.33, 0.33). The device has a maximum luminance of 6745 cd/m 2 , a maximum external efficiency of 1.36 %, corresponding to 2.56 cd/A

CaSO{sub 4}:Dy microphosphor for thermal neutron dosimetry

Energy Technology Data Exchange (ETDEWEB)

Bhadane, Mahesh S. [Microtron Accelerator Laboratory, Department of Physics, Savitribai Phule Pune University, Pune 411007 (India); Mandlik, Nandkumar [Department of Physics, Fergusson College, Savitribai Phule Pune University, Pune 411007 (India); Patil, B.J. [Department of Physics, Abasaheb Garware College, Pune 411004 (India); Dahiwale, S.S.; Sature, K.R.; Bhoraskar, V.N. [Microtron Accelerator Laboratory, Department of Physics, Savitribai Phule Pune University, Pune 411007 (India); Dhole, S.D., E-mail: sanjay@physics.unipune.ac.in [Microtron Accelerator Laboratory, Department of Physics, Savitribai Phule Pune University, Pune 411007 (India)

2016-02-15

Dysprosium-doped calcium sulphate (CaSO{sub 4}:Dy) microphosphor was synthesized by acid re-crystallization method and its thermoluminescence (TL) properties irradiated with thermal neutrons was studied. Structural and morphological characteristics have been studied using X-ray diffraction and SEM which mainly exhibits a orthorhombic structure with particle size of 200 to 250 µm. Moreover, thermal neutron dosimetric characteristics of the microphosphor such as thermoluminescence glow curve, TL dose–response have been studied. This microphosphor powder represents a TL glow peak (T{sub max}) centered at around 240 °C. The TL response of CaSO{sub 4}:Dy microphosphor as a function of thermal neutron fluence is observed to be very linear upto the fluence of 52×10{sup 11} n/cm{sup 2} and further saturates. In addition, TL glow curves were deconvoluted by computerized glow curve deconvolution (CGCD) method and corresponding trapping parameters have been determined. It has been found that for every deconvoluted peak there is change in the order of kinetics. Overall, the experimental results show that the CaSO{sub 4}:Dy microphosphor can have potential to be an effective thermal neutron dosimetry. - Highlights: • Acid-recrystallization method is used to prepare CaSO{sub 4}:Dy microphosphor • CaSO{sub 4}:Dy phosphor irradiated thermal neutrons for dosimetric application. • TL response curve showed to be a perfect linear. • Trapping parameters has been calculated using CGCD curve fitting.

An anode with aluminum doped on zinc oxide thin films for organic light emitting devices

International Nuclear Information System (INIS)

Xu Denghui; Deng Zhenbo; Xu Ying; Xiao Jing; Liang Chunjun; Pei Zhiliang; Sun Chao

2005-01-01

Doped zinc oxides are attractive alternative materials as transparent conducting electrode because they are nontoxic and inexpensive compared with indium tin oxide (ITO). Transparent conducting aluminum-doped zinc oxide (AZO) thin films have been deposited on glass substrates by DC reactive magnetron sputtering method. Films were deposited at a substrate temperature of 150-bar o C in 0.03 Pa of oxygen pressure. The electrical and optical properties of the film with the Al-doping amount of 2 wt% in the target were investigated. For the 300-nm thick AZO film deposited using a ZnO target with an Al content of 2 wt%, the lowest electrical resistivity was 4x10 -4 Ωcm and the average transmission in the visible range 400-700 nm was more than 90%. The AZO film was used as an anode contact to fabricate organic light-emitting diodes. The device performance was measured and the current efficiency of 2.9 cd/A was measured at a current density of 100 mA/cm 2

Structural, optical and electrochemical properties of F-doped vanadium oxide transparent semiconducting thin films

Energy Technology Data Exchange (ETDEWEB)

Mousavi, M.; Khorrami, G.H. [University of Bojnord, Department of Physics, Faculty of Basic Science, Bojnord (Iran, Islamic Republic of); Kompany, A. [Ferdowsi University of Mashhad, Department of Physics, Mashhad (Iran, Islamic Republic of); Yazdi, S.T. [Payame Noor University (PNU), Department of Physics, Tehran (Iran, Islamic Republic of)

2017-12-15

In this study, F-doped vanadium oxide thin films with doping levels up to 60 at % were prepared by spray pyrolysis method on glass substrates. To measure the electrochemical properties, some films were deposited on fluorine-tin oxide coated glass substrates. The effect of F-doping on the structural, electrical, optical and electrochemical properties of vanadium oxide samples was investigated. The X-ray diffractographs analysis has shown that all the samples grow in tetragonal β-V{sub 2}O{sub 5} phase structure with the preferred orientation of [200]. The intensity of (200) peak belonging to β-V{sub 2}O{sub 5} phase was strongest in the undoped vanadium oxide film. The scanning electron microscopy images show that the samples have nanorod- and nanobelt-shaped structure. The size of the nanobelts in the F-doped vanadium oxide films is smaller than that in the pure sample and the width of the nanobelts increases from 30 to 70 nm with F concentration. With increasing F-doping level from 10 to 60 at %, the resistivity, the transparency and the optical band gap decrease from 111 to 20 Ω cm, 70 to 50% and 2.4 to 2.36 eV, respectively. The cyclic voltammogram (CV) results show that the undoped sample has the most extensive CV and by increasing F-doping level from 20 to 60 at %, the area of the CV is expanded. The anodic and cathodic peaks in F-doped samples are stronger. (orig.)

Investigation of corrosion behavior of nitrogen doped and platinum/ruthenium doped diamond-like carbon thin films in Hank's solution

Energy Technology Data Exchange (ETDEWEB)

Khun, N.W.; Liu, E., E-mail: MEJLiu@ntu.edu.sg

2011-10-10

Undoped (DLC), nitrogen-doped (N-DLC) and platinum/ruthenium doped diamond-like carbon (PtRu-DLC) thin films were deposited on p-Si (100) substrates using a DC magnetron sputtering deposition system. The chemical composition, bonding structure, surface morphology and adhesion strength of the films were characterized using X-ray photoelectron spectroscopy (XPS), micro-Raman spectroscopy, atomic force microscopy (AFM) and micro-scratch test, respectively. The corrosion behavior of the films in a Hank's solution was investigated using potentiodynamic polarization test. The corrosion results revealed that the PtRu-DLC film had the highest corrosion potential among the films used in this study. Highlights: {yields} DLC thin films were deposited on Si substrates via dc magnetron sputtering. {yields} Some DLC films were doped with N and/or Pt/Ru. {yields} The film corrosion behavior was studied in a Hank solution with polarization test. {yields} The PtRu-DLC film showed the highest corrosion potential among the films studied.

Spectroscopic and luminescent properties of Co2+ doped tin oxide thin films by spray pyrolysis

Directory of Open Access Journals (Sweden)

K. Durga Venkata Prasad

2016-07-01

Full Text Available The wide variety of electronic and chemical properties of metal oxides makes them exciting materials for basic research and for technological applications alike. Oxides span a wide range of electrical properties from wide band-gap insulators to metallic and superconducting. Tin oxide belongs to a class of materials called Transparent Conducting Oxides (TCO which constitutes an important component for optoelectronic applications. Co2+ doped tin oxide thin films were prepared by chemical spray pyrolysis synthesis and characterized by powder X-ray diffraction, SEM, TEM, FT-IR, optical, EPR and PL techniques to collect the information about the crystal structure, coordination/local site symmetry of doped Co2+ ions in the host lattice and the luminescent properties of the prepared sample. Powder XRD data revealed that the crystal structure belongs to tetragonal rutile phase and its lattice cell parameters are evaluated. The average crystallite size was estimated to be 26 nm. The morphology of prepared sample was analyzed by using SEM and TEM studies. Functional groups of the prepared sample were observed in the FT-IR spectrum. Optical absorption and EPR studies have shown that on doping, Co2+ ions enter in the host lattice as octahedral site symmetry. PL studies of Co2+ doped SnO2 thin films exhibit blue and yellow emission bands. CIE chromaticity coordinates were also calculated from emission spectrum of Co2+ doped SnO2 thin films.

Nanocrystalline Cobalt-doped SnO2 Thin Film: A Sensitive Cigarette Smoke Sensor

Directory of Open Access Journals (Sweden)

Patil Shriram B.

2011-11-01

Full Text Available This article discusses a sensitive cigarette smoke sensor based on Cobalt doped Tin oxide (Co-SnO2 thin films deposited on glass substrate by a conventional Spray Pyrolysis technique. The Co-SnO2 thin films have been characterized by X-ray Diffraction (XRD, Scanning Electron Microscopy (SEM and Energy Dispersive X-ray Spectroscopy (EDAX. The XRD spectrum shows polycrystalline nature of the film with a mixed phase comprising of SnO2 and Co3O4. The SEM image depicts uniform granular morphology covering total substrate surface. The compositional analysis derived using EDAX confirmed presence of Co in addition to Sn and O in the film. Cigarette smoke sensing characteristics of the Co-SnO2 thin film have been studied under atmospheric condition at different temperatures and smoke concentration levels. The sensing parameters such as sensitivity, response time and recovery time are observed to be temperature dependent, exhibiting better results at 330 oC.

Iron, nitrogen and silicon doped diamond like carbon (DLC) thin films: A comparative study

International Nuclear Information System (INIS)