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Sample records for c-si bond formations

  1. Effect of Pressurizing during Compaction and Sintering on the Formation of Reaction-Bonded SiC–Ti{sub 3}SiC{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Sun-Han; Jung, Yang-Il; Rhee, Young-Woo; Park, Dong-Jun; Park, Jung-Hwan; Park, Jeong-Yong; Kim, Hyun-Gil; Koo, Yang-Hyun [LWR Fuel Technology Division, KAERI, Daejeon (Korea, Republic of)

    2016-05-15

    A reaction-bonded SiC-Ti{sub 3}SiC{sub 2} ceramic composite was produced for use in a ceramic-metal composite cladding tube. The diffusion reaction between TiC and Si was investigated with respect to process pressure. The mole-fraction of TiC and Si was controlled to be 3:2 to obtain a Ti{sub 3}SiC{sub 2} phase in the ceramic composite. Sintering was conducted at 1450 °C where TiC particles could react with melted Si. SiC ceramic composites consisting of Ti{sub 3}SiC{sub 2} and TiSi{sub 2} matrix phases were obtained. The formation of the constituent phases was strongly related to the processing pressure. The number of second phases in the SiC-Ti{sub 3}SiC{sub 2} composite was controlled by adjusting the processing pressure. When the powder compacts were not pressurized, no Ti{sub 3}SiC{sub 2} phase was formed. However, the Ti{sub 3}SiC{sub 2} phase was formed under pressurizing during compaction and/or sintering. The higher the pressure the higher the purity of SiC-Ti{sub 3}SiC{sub 2}. The dual-phased SiC-Ti{sub 3}SiC{sub 2} composite, however, revealed the decreased resistance to high-temperature oxidation. It is suggested that the incorporation of TiSi{sub 2} in the composite increases the oxidation resistance as well as mechanical property.

  2. Bond formation in hafnium atom implantation into SiC induced by high-energy electron irradiation

    International Nuclear Information System (INIS)

    Yasuda, H.; Mori, H.; Sakata, T.; Naka, M.; Fujita, H.

    1992-01-01

    Bilayer films of Hf (target atoms)/α-SiC (substrate) were irradiated with 2 MeV electrons in an ultra-high voltage electron microscope (UHVEM), with the electron beam incident on the hafnium layer. As a result of the irradiation, hafnium atoms were implanted into the SiC substrate. Changes in the microstructure and valence electronic states associated with the implantation were studied by a combination of UHVEM and Auger valence electron spectroscopy. The implantation process is summarized as follows. (1) Irradiation with 2 MeV electrons first induces a crystalline-to-amorphous transition in α-SiC. (2) Hafnium atoms which have been knocked-off from the hafnium layer by collision with the 2 MeV electrons are implanted into the resultant amorphous SiC. (3) The implanted hafnium atoms make preferential bonding to carbon atoms. (4) With continued irradiation, the hafnium atoms repeat the displacement along the beam direction and the subsequent bonding with the dangling hybrids of carbon and silicon. The repetition of the displacement and subsequent bonding lead to the deep implantation of hafnium atoms into the SiC substrate. It is concluded that implantation successfully occurs when the bond strength between a constituent atom of a substrate and an injected atom is stronger than that between constituent atoms of a substrate. (Author)

  3. Sequential C-Si Bond Formations from Diphenylsilane: Application to Silanediol Peptide Isostere Precursors

    DEFF Research Database (Denmark)

    Nielsen, Lone; Skrydstrup, Troels

    2008-01-01

    and the first new carbon-silicon bond. The next step is the reduction of this hydridosilane with lithium metal providing a silyl lithium reagent, which undergoes a highly diastereoselective addition to an optically active tert-butanesulfinimine, thus generating the second C-Si bond. This method allows...

  4. Electronic Structure and Chemical Bond of Ti3SiC2 and Adding Al Element

    Institute of Scientific and Technical Information of China (English)

    MIN Xinmin; LU Ning; MEI Bingchu

    2006-01-01

    The relation among electronic structure, chemical bond and property of Ti3SiC2 and Al-doped was studied by density function and discrete variation (DFT-DVM) method. When Al element is added into Ti3SiC2, there is a less difference of ionic bond, which does not play a leading role to influent the properties. After adding Al, the covalent bond of Al and the near Ti becomes somewhat weaker, but the covalent bond of Al and the Si in the same layer is obviously stronger than that of Si and Si before adding. Therefore, in preparation of Ti3SiC2, adding a proper quantity of Al can promote the formation of Ti3SiC2. The density of state shows that there is a mixed conductor character in both of Ti3SiC2 and adding Al element. Ti3SiC2 is with more tendencies to form a semiconductor. The total density of state near Fermi lever after adding Al is larger than that before adding, so the electric conductivity may increase after adding Al.

  5. Interfacial push-out measurements of fully-bonded SiC/SiC composites

    International Nuclear Information System (INIS)

    Snead, L.L.; Steiner, D.; Zinkle, S.J.

    1990-01-01

    The direct measurement of interfacial bond strength and frictional resistance to sliding in a fully-bonded SiC/SiC composite is measured. It is shown that a fiber push-out technique can be utilized for small diameter fibers and very thin composite sections. Results are presented for a 22 micron thick section for which 37 out of 44 Nicalon fibers tested were pushed-out within the maximum nanoindentor load of 120 mN. Fiber interfacial yielding, push-out and sliding resistance were measured for each fiber. The distribution of interfacial strengths is treated as being Weibull in form. 14 refs., 5 figs

  6. Effects of Surface Treatment Processes of SiC Ceramic on Interfacial Bonding Property of SiC-AFRP

    Directory of Open Access Journals (Sweden)

    WEI Ru-bin

    2016-12-01

    Full Text Available To improve the interfacial bonding properties of SiC-aramid fiber reinforced polymer matrix composites (SiC-AFRP, the influences of etching process of SiC ceramic, coupling treatment process, and the adhesives types on the interfacial peel strength of SiC-AFRP were studied. The results show that the surface etching process and coupling treatment process of silicon carbide ceramic can effectively enhance interfacial bonding property of the SiC-AFRP. After soaked the ceramic in K3Fe(CN6 and KOH mixed etching solution for 2 hours, and coupled with vinyl triethoxy silane coupling agent, the interfacial peel strength of the SiC-AFRP significantly increases from 0.45kN/m to 2.20kN/m. EVA hot melt film with mass fraction of 15%VA is ideal for interface adhesive.

  7. Formation mechanism of SiC in C-Si system by ion irradiation

    International Nuclear Information System (INIS)

    Hishita, Shunichi; Aizawa, Takashi; Suehara, Shigeru; Haneda, Hajime

    2003-01-01

    The irradiation effects of 2 MeV He + , Ne + , and Ar + ions on the film structure of the C-Si system were investigated with RHEED and XPS. The ion dose dependence of the SiC formation was kinetically analyzed. The SiC formation at moderate temperature was achieved by 2 MeV ion irradiation when the thickness of the initial carbon films was appropriate. The evolution process of the SiC film thickness consisted of the 3 stages. The first stage was the steep increase of the SiC, and was governed by the inelastic collision. The second was the gentle increase of the SiC, and was governed by the diffusion. The last was the decrease of the SiC, and was caused by the sputtering. The formation mechanism of the SiC was discussed. (author)

  8. Development and Performance Evaluations of HfO2-Si and Rare Earth-Si Based Environmental Barrier Bond Coat Systems for SiC/SiC Ceramic Matrix Composites

    Science.gov (United States)

    Zhu, Dongming

    2014-01-01

    Ceramic environmental barrier coatings (EBC) and SiCSiC ceramic matrix composites (CMCs) will play a crucial role in future aircraft propulsion systems because of their ability to significantly increase engine operating temperatures, improve component durability, reduce engine weight and cooling requirements. Advanced EBC systems for SiCSiC CMC turbine and combustor hot section components are currently being developed to meet future turbine engine emission and performance goals. One of the significant material development challenges for the high temperature CMC components is to develop prime-reliant, high strength and high temperature capable environmental barrier coating bond coat systems, since the current silicon bond coat cannot meet the advanced EBC-CMC temperature and stability requirements. In this paper, advanced NASA HfO2-Si based EBC bond coat systems for SiCSiC CMC combustor and turbine airfoil applications are investigated. The coating design approach and stability requirements are specifically emphasized, with the development and implementation focusing on Plasma Sprayed (PS) and Electron Beam-Physic Vapor Deposited (EB-PVD) coating systems and the composition optimizations. High temperature properties of the HfO2-Si based bond coat systems, including the strength, fracture toughness, creep resistance, and oxidation resistance were evaluated in the temperature range of 1200 to 1500 C. Thermal gradient heat flux low cycle fatigue and furnace cyclic oxidation durability tests were also performed at temperatures up to 1500 C. The coating strength improvements, degradation and failure modes of the environmental barrier coating bond coat systems on SiCSiC CMCs tested in simulated stress-environment interactions are briefly discussed and supported by modeling. The performance enhancements of the HfO2-Si bond coat systems with rare earth element dopants and rare earth-silicon based bond coats are also highlighted. The advanced bond coat systems, when

  9. Interracial Structure and Formation Mechanism of Ultrasonic-assisted Brazed Joint of SiC Ceramics with Al-12Si Filler Metals in Air

    Institute of Scientific and Technical Information of China (English)

    Xiaoguang Chen; Ruishan Xie; Zhiwei Lai; Lei Liu; Jiuchun Yan; Guisheng Zou

    2017-01-01

    Ultrasonic-assisted brazing of SiC ceramics was performed by filling with an Al--12Si alloy at a low temperature of 620 ℃ in air.The interfacial characteristics and formation mechanism were investigated.The joint shear strength reached 84-94 MPa using the ultrasonic time of 2-16 s.The fracture morphology showed that the fracture path initiated and propagated in the joint alloy.The thin film of amorphous SiO2 that formed on the SiC surface was non-uniformly decomposed and diffused into the liquid Al-12Si alloy under the cavitation erosion effect of ultrasound.Abnormal isolated blocks of Al2SiO5 compounds formed at the interface between Al--12Si and a thicker SiO2 layer formed during the thermal oxidation treatment of the SiC ceramic.The SiO2 layer on the SiC ceramic did not hinder or impair the wetting and bonding process,and a stronger bond could form between Al-12Si and SiO2 or SiC in ultrasonicassisted brazing.

  10. Si-to-Si wafer bonding using evaporated glass

    DEFF Research Database (Denmark)

    Reus, Roger De; Lindahl, M.

    1997-01-01

    Anodic bonding of Si to Si four inch wafers using evaporated glass was performed in air at temperatures ranging from 300°C to 450°C. Although annealing of Si/glass structures around 340°C for 15 minutes eliminates stress, the bonded wafer pairs exhibit compressive stress. Pull testing revealed...

  11. Interfacial study of NiTi–Ti{sub 3}SiC{sub 2} solid state diffusion bonded joints

    Energy Technology Data Exchange (ETDEWEB)

    Kothalkar, A. [Department of Materials Science and Engineering, Texas A and M University, College Station, TX 77843 (United States); Cerit, A. [Department of Industrial Design Engineering, Erciyes University, Kayseri (Turkey); Proust, G. [School of Civil Engineering, University of Sydney, Sydney, NSW 2006 (Australia); Basu, S. [Agilent Technologies, Chandler, AZ (United States); Radovic, M., E-mail: mradovic@tamu.edu [Department of Materials Science and Engineering, Texas A and M University, College Station, TX 77843 (United States); Karaman, I., E-mail: ikaraman@tamu.edu [Department of Materials Science and Engineering, Texas A and M University, College Station, TX 77843 (United States)

    2015-01-12

    The interfaces between the stress-assisted diffusion bonded Ti{sub 3}SiC{sub 2} and equiatomic NiTi, two distinct material systems that show pseudoelasticity were studied. The interfaces were formed in the 800–1000 °C temperature range, for 1, 5 and 10 h under flowing argon. Bonding was observed in all the cases considered, except at 800 °C after 1 h. Morphology and reaction phases in the interface were characterized using scanning electron microscopy, elemental micro probe analysis and electron backscatter diffraction analysis. The interfacial structure formed between NiTi and Ti{sub 3}SiC{sub 2} layers consists of NiTi/Ti{sub 2}Ni/Ti{sub 5}Si{sub 3}/NiTiSi/Ti{sub 3}SiC{sub 2}. Diffusion of Si into NiTi from Ti{sub 3}SiC{sub 2}, and Ni from NiTi into reaction zone was found to be responsible for the formation of reaction layers in the interface and thus for bonding at these conditions. The overall reaction layer thickness grows following the parabolic kinetic law. Nano-indentation and Vickers micro hardness tests were carried out to investigate the mechanical properties of the interface. Nano-indentation showed that the elastic moduli of the phases in the interface are close to that of Ti{sub 3}SiC{sub 2} while their hardness is higher than that of both Ti{sub 3}SiC{sub 2} and NiTi. Artificially formed cracks through microindents were observed to be branched and propagated into Ti{sub 3}SiC{sub 2} phase indicating good resistance against delamination.

  12. Structural, bonding, anisotropic mechanical and thermal properties of Al4SiC4 and Al4Si2C5 by first-principles investigations

    Directory of Open Access Journals (Sweden)

    Liang Sun

    2016-09-01

    Full Text Available The structural, bonding, electronic, mechanical and thermal properties of ternary aluminum silicon carbides Al4SiC4 and Al4Si2C5 are investigated by first-principles calculations combined with the Debye quasi-harmonic approximation. All the calculated mechanical constants like bulk, shear and Young's modulus are in good agreement with experimental values. Both compounds show distinct anisotropic elastic properties along different crystalline directions, and the intrinsic brittleness of both compounds is also confirmed. The elastic anisotropy of both aluminum silicon carbides originates from their bonding structures. The calculated band gap is obtained as 1.12 and 1.04 eV for Al4SiC4 and Al4Si2C5 respectively. From the total electron density distribution map, the obvious covalent bonds exist between Al and C atoms. A distinct electron density deficiency sits between AlC bond along c axis among Al4SiC4, which leads to its limited tensile strength. Meanwhile, the anisotropy of acoustic velocities for both compounds is also calculated and discussed.

  13. Rhodium-Catalyzed C-C Bond Formation via Heteroatom-Directed C-H Bond Activation

    Energy Technology Data Exchange (ETDEWEB)

    Colby, Denise; Bergman, Robert; Ellman, Jonathan

    2010-05-13

    that has seen widespread success involves the use of a proximal heteroatom that serves as a directing group for the selective functionalization of a specific C-H bond. In a survey of examples of heteroatom-directed Rh catalysis, two mechanistically distinct reaction pathways are revealed. In one case, the heteroatom acts as a chelator to bind the Rh catalyst, facilitating reactivity at a proximal site. In this case, the formation of a five-membered metallacycle provides a favorable driving force in inducing reactivity at the desired location. In the other case, the heteroatom initially coordinates the Rh catalyst and then acts to stabilize the formation of a metal-carbon bond at a proximal site. A true test of the utility of a synthetic method is in its application to the synthesis of natural products or complex molecules. Several groups have demonstrated the applicability of C-H bond functionalization reactions towards complex molecule synthesis. Target-oriented synthesis provides a platform to test the effectiveness of a method in unique chemical and steric environments. In this respect, Rh-catalyzed methods for C-H bond functionalization stand out, with several syntheses being described in the literature that utilize C-H bond functionalization in a key step. These syntheses are highlighted following the discussion of the method they employ.

  14. Microstructure and bonding mechanism of Al/Ti bonded joint using Al-10Si-1Mg filler metal

    International Nuclear Information System (INIS)

    Sohn, Woong H.; Bong, Ha H.; Hong, Soon H.

    2003-01-01

    The microstructures and liquid state diffusion bonding mechanism of cp-Ti to 1050 Al using an Al-10.0wt.%Si-1.0wt.%Mg filler metal with 100 μm in thickness have been investigated at 620 deg. C under 1x10 -4 Torr. The effects of bonding process parameters on microstructure of bonded joint have been analyzed by using an optical microscope, AES, scanning electron microscopy and EDS. The interfacial bond strength of Al/Ti bonded joints was measured by the single lap shear test. The results show that the bonding at the interface between Al and filler metal proceeds by wetting the Al with molten filler metal, and followed by removal of oxide layer on surface of Al. The interface between Al and filler metal moved during the isothermal solidification of filler metal by the diffusion of Si from filler metal into Al layer. The interface between Al and filler metal became curved in shape with increasing bonding time due to capillary force at grain boundaries. The bonding at the interface between Ti and filler metal proceeds by the formation of two different intermetallic compound layers, identified as Al 5 Si 12 Ti 7 and Al 12 Si 3 Ti 5 , followed by the growth of the intermetallic compound layers. The interfacial bond strength at Al/Ti joint increased with increasing bonding time up to 25 min at 620 deg. C. However, the interfacial bond strength of Al/Ti joint decreased after bonding time of 25 min at 620 deg. C due to formation of cavities in Al near Al/intermetallic interfaces

  15. DISCOVERY OF SiCSi IN IRC+10216: A MISSING LINK BETWEEN GAS AND DUST CARRIERS OF Si–C BONDS

    Energy Technology Data Exchange (ETDEWEB)

    Cernicharo, J.; Agúndez, M.; Prieto, L. Velilla; Quintana-Lacaci, G. [Group of Molecular Astrophysics, ICMM, CSIC, C/Sor Juana Inés de La Cruz N3, E-28049, Madrid (Spain); McCarthy, M. C.; Gottlieb, C. A.; Drumel, M. A. Martin-; Patel, N. A.; Reilly, N. J.; Young, K. H. [Harvard-Smithsonian Center for Astrophysics, Cambridge, MA 02138, and School of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138 (United States); Baraban, J. H. [Department of Chemistry and Biochemistry, University of Colorado, Boulder, CO 80309 (United States); Changala, P. B. [JILA, National Institute of Standards and Technology and University of Colorado, and Department of Physics, University of Colorado, Boulder, CO 80309 (United States); Guélin, M. [Institut de Radioastronomie Millimétrique, 300 rue de la Piscine, F-38406 St-Martin d’Hères (France); Kahane, C. [Universit Grenoble Alpes, IPAG, F-38000 Grenoble (France); CNRS, IPAG, F-38000 Grenoble (France); Stanton, J. F. [Institute for Theoretical Chemistry, Department of Chemistry, The University of Texas at Austin, Austin, TX 78712 (United States); Thorwirth, S. [I. Physikalisches Institut, Universität zu Köln, Zülpicher Str. 77, D-50937 Köln (Germany)

    2015-06-10

    We report the discovery in space of a disilicon species, SiCSi, from observations between 80 and 350 GHz with the IRAM 30 m radio telescope. Owing to the close coordination between laboratory experiments and astrophysics, 112 lines have now been detected in the carbon-rich star CW Leo. The derived frequencies yield improved rotational and centrifugal distortion constants up to sixth order. From the line profiles and interferometric maps with the Submillimeter Array, the bulk of the SiCSi emission arises from a region of 6″ in radius. The derived abundance is comparable to that of SiC{sub 2}. As expected from chemical equilibrium calculations, SiCSi and SiC{sub 2} are the most abundant species harboring a Si−C bond in the dust formation zone and certainly both play a key role in the formation of SiC dust grains.

  16. III-V/Si wafer bonding using transparent, conductive oxide interlayers

    Energy Technology Data Exchange (ETDEWEB)

    Tamboli, Adele C., E-mail: Adele.Tamboli@nrel.gov; Hest, Maikel F. A. M. van; Steiner, Myles A.; Essig, Stephanie; Norman, Andrew G.; Bosco, Nick; Stradins, Paul [National Center for Photovoltaics, National Renewable Energy Laboratory, 15013 Denver West Pkwy, Golden, Colorado 80401 (United States); Perl, Emmett E. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106-9560 (United States)

    2015-06-29

    We present a method for low temperature plasma-activated direct wafer bonding of III-V materials to Si using a transparent, conductive indium zinc oxide interlayer. The transparent, conductive oxide (TCO) layer provides excellent optical transmission as well as electrical conduction, suggesting suitability for Si/III-V hybrid devices including Si-based tandem solar cells. For bonding temperatures ranging from 100 °C to 350 °C, Ohmic behavior is observed in the sample stacks, with specific contact resistivity below 1 Ω cm{sup 2} for samples bonded at 200 °C. Optical absorption measurements show minimal parasitic light absorption, which is limited by the III-V interlayers necessary for Ohmic contact formation to TCOs. These results are promising for Ga{sub 0.5}In{sub 0.5}P/Si tandem solar cells operating at 1 sun or low concentration conditions.

  17. Analysis on the sequence of formation of Ti{sub 3}SiC{sub 2} and Ti{sub 3}SiC{sub 2}/SiC composites

    Energy Technology Data Exchange (ETDEWEB)

    Radhakrishnan, R.; Bhaduri, S.B. [Idaho Univ., Moscow, ID (United States). Dept. of Mining and Metallurgy; Henager, C.H. Jr. [Pacific Northwest Lab., Richland, WA (United States)

    1995-05-01

    Ti{sub 3}SiC{sub 2}, a compound in the ternary Ti-Si-C system, is reported to be ductile. This paper reports the sequence of formation of Ti{sub 3}SiC{sub 2} and Ti{sub 3}SiC{sub 2}/SiC composites involving either combustion synthesis or by displacement reaction, respectively. Onset of exothermic reaction temperatures were determined using Differential Thermal Analysis (DTA). Phases present after the exothermic temperatures were analyzed by X-Ray diffraction. Based on these observations, a route to formation of Ti{sub 3}SiC{sub 2} and Ti{sub 3}SiC{sub 2}/SiC composites is proposed for the two`s thesis methods.

  18. Gelcasting of SiC/Si for preparation of silicon nitride bonded silicon carbide

    International Nuclear Information System (INIS)

    Xie, Z.P.; Tsinghua University, Beijing,; Cheng, Y.B.; Lu, J.W.; Huang, Y.

    2000-01-01

    In the present paper, gelcasting of aqueous slurry with coarse silicon carbide(1mm) and fine silicon particles was investigated to fabricate silicon nitride bonded silicon carbide materials. Through the examination of influence of different polyelectrolytes on the Zeta potential and viscosity of silicon and silicon carbide suspensions, a stable SiC/Si suspension with 60 vol% solid loading could be prepared by using polyelectrolyte of D3005 and sodium alginate. Gelation of this suspension can complete in 10-30 min at 60-80 deg C after cast into mold. After demolded, the wet green body can be dried directly in furnace and the green strength will develop during drying. Complex shape parts with near net size were prepared by the process. Effects of the debindering process on nitridation and density of silicon nitride bonded silicon carbide were also examined. Copyright (2000) The Australian Ceramic Society

  19. {alpha}-Man monolayer formation via Si-C bond formation and protein recognition

    Energy Technology Data Exchange (ETDEWEB)

    Funato, Koji [School of Materials Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292 (Japan); Shirahata, Naoto [National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Miura, Yoshiko, E-mail: miuray@jaist.ac.j [School of Materials Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292 (Japan)

    2009-11-30

    An acetylenyl-terminated saccharide was synthesized and the thin layer formation on the hydrogen-terminated silicon was investigated. The acetylenyl-terminated saccharide was synthesized by the condensation reaction of hexynoic acid and p-aminophenyl saccharide. This was reacted with hydrogen-terminated silicon (Si-H) by a photochemical reaction. The resulting saccharide modified substrate was analyzed by ellipsometry and X-ray photoelectron spectroscopy, which showed the formation of a uniform monolayer. The surface's ability to recognize proteins was analyzed by fluorescent microscopy, and showed specific interactions with sugar recognition proteins.

  20. Sintering Behavior of Spark Plasma Sintered SiC with Si-SiC Composite Nanoparticles Prepared by Thermal DC Plasma Process

    Science.gov (United States)

    Yu, Yeon-Tae; Naik, Gautam Kumar; Lim, Young-Bin; Yoon, Jeong-Mo

    2017-11-01

    The Si-coated SiC (Si-SiC) composite nanoparticle was prepared by non-transferred arc thermal plasma processing of solid-state synthesized SiC powder and was used as a sintering additive for SiC ceramic formation. Sintered SiC pellet was prepared by spark plasma sintering (SPS) process, and the effect of nano-sized Si-SiC composite particles on the sintering behavior of micron-sized SiC powder was investigated. The mixing ratio of Si-SiC composite nanoparticle to micron-sized SiC was optimized to 10 wt%. Vicker's hardness and relative density was increased with increasing sintering temperature and holding time. The relative density and Vicker's hardness was further increased by reaction bonding using additional activated carbon to the mixture of micron-sized SiC and nano-sized Si-SiC. The maximum relative density (97.1%) and Vicker's hardness (31.4 GPa) were recorded at 1800 °C sintering temperature for 1 min holding time, when 0.2 wt% additional activated carbon was added to the mixture of SiC/Si-SiC.

  1. On formation of silicon nanocrystals under annealing SiO2 layers implanted with Si ions

    International Nuclear Information System (INIS)

    Kachurin, G.A.; Yanovskaya, S.G.; Volodin, V.A.; Kesler, V.G.; Lejer, A.F.; Ruault, M.-O.

    2002-01-01

    Raman scattering, X-ray photoelectron spectroscopy, and photoluminescence have been used to study the formation of silicon nanocrystals in SiO 2 implanted with Si ions. Si clusters have been formed at once in the postimplanted layers, providing the excessive Si concentration more ∼ 3 at. %. Si segregation with Si-Si 4 bonds formation is enhanced as following annealing temperature increase, however, the Raman scattering by Si clusters diminishes. The effect is explained by a transformation of the chain-like Si clusters into compact phase nondimensional structures. Segregation of Si nanoprecipitates had ended about 1000 deg C, but the strong photoluminescence typical for Si nanocrystals manifested itself only after 1100 deg C [ru

  2. Joining of SiC ceramics and SiC/SiC composites

    Energy Technology Data Exchange (ETDEWEB)

    Rabin, B.H. [Idaho National Engineering Lab., Idaho Falls, ID (United States)

    1996-08-01

    This project has successfully developed a practical and reliable method for fabricating SiC ceramic-ceramic joints. This joining method will permit the use of SiC-based ceramics in a variety of elevated temperature fossil energy applications. The technique is based on a reaction bonding approach that provides joint interlayers compatible with SiC, and excellent joint mechanical properties at temperatures exceeding 1000{degrees}C. Recent emphasis has been given to technology transfer activities, and several collaborative research efforts are in progress. Investigations are focusing on applying the joining method to sintered {alpha}-SiC and fiber-reinforced SiC/SiC composites for use in applications such as heat exchangers, radiant burners and gas turbine components.

  3. Boron-Based Catalysts for C-C Bond-Formation Reactions.

    Science.gov (United States)

    Rao, Bin; Kinjo, Rei

    2018-05-02

    Because the construction of the C-C bond is one of the most significant reactions in organic chemistry, the development of an efficient strategy has attracted much attention throughout the synthetic community. Among various protocols to form C-C bonds, organoboron compounds are not just limited to stoichiometric reagents, but have also made great achievements as catalysts because of the easy modification of the electronic and steric impacts on the boron center. This review presents recent developments of boron-based catalysts applied in the field of C-C bond-formation reactions, which are classified into four kinds on the basis of the type of boron catalyst: 1) highly Lewis acidic borane, B(C 6 F 5 ) 3 ; 2) organoboron acids, RB(OH) 2 , and their ester derivatives; 3) borenium ions, (R 2 BL)X; and 4) other miscellaneous kinds. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  4. Sintering Behavior of Spark Plasma Sintered SiC with Si-SiC Composite Nanoparticles Prepared by Thermal DC Plasma Process.

    Science.gov (United States)

    Yu, Yeon-Tae; Naik, Gautam Kumar; Lim, Young-Bin; Yoon, Jeong-Mo

    2017-11-25

    The Si-coated SiC (Si-SiC) composite nanoparticle was prepared by non-transferred arc thermal plasma processing of solid-state synthesized SiC powder and was used as a sintering additive for SiC ceramic formation. Sintered SiC pellet was prepared by spark plasma sintering (SPS) process, and the effect of nano-sized Si-SiC composite particles on the sintering behavior of micron-sized SiC powder was investigated. The mixing ratio of Si-SiC composite nanoparticle to micron-sized SiC was optimized to 10 wt%. Vicker's hardness and relative density was increased with increasing sintering temperature and holding time. The relative density and Vicker's hardness was further increased by reaction bonding using additional activated carbon to the mixture of micron-sized SiC and nano-sized Si-SiC. The maximum relative density (97.1%) and Vicker's hardness (31.4 GPa) were recorded at 1800 °C sintering temperature for 1 min holding time, when 0.2 wt% additional activated carbon was added to the mixture of SiC/Si-SiC.

  5. Thermally induced formation of SiC nanoparticles from Si/C/Si multilayers deposited by ultra-high-vacuum ion beam sputtering

    International Nuclear Information System (INIS)

    Chung, C-K; Wu, B-H

    2006-01-01

    A novel approach for the formation of SiC nanoparticles (np-SiC) is reported. Deposition of Si/C/Si multilayers on Si(100) wafers by ultra-high-vacuum ion beam sputtering was followed by thermal annealing in vacuum for conversion into SiC nanoparticles. The annealing temperature significantly affected the size, density, and distribution of np-SiC. No nanoparticles were formed for multilayers annealed at 500 0 C, while a few particles started to appear when the annealing temperature was increased to 700 0 C. At an annealing temperature of 900 0 C, many small SiC nanoparticles, of several tens of nanometres, surrounding larger submicron ones appeared with a particle density approximately 16 times higher than that observed at 700 0 C. The higher the annealing temperature was, the larger the nanoparticle size, and the higher the density. The higher superheating at 900 0 C increased the amount of stable nuclei, and resulted in a higher particle density compared to that at 700 0 C. These particles grew larger at 900 0 C to reduce the total surface energy of smaller particles due to the higher atomic mobility and growth rate. The increased free energy of stacking defects during particle growth will limit the size of large particles, leaving many smaller particles surrounding the large ones. A mechanism for the np-SiC formation is proposed in this paper

  6. Formation of III–V-on-insulator structures on Si by direct wafer bonding

    International Nuclear Information System (INIS)

    Yokoyama, Masafumi; Iida, Ryo; Ikku, Yuki; Kim, Sanghyeon; Takenaka, Mitsuru; Takagi, Shinichi; Takagi, Hideki; Yasuda, Tetsuji; Yamada, Hisashi; Ichikawa, Osamu; Fukuhara, Noboru; Hata, Masahiko

    2013-01-01

    We have studied the formation of III–V-compound-semiconductors-on-insulator (III–V-OI) structures with thin buried oxide (BOX) layers on Si wafers by using developed direct wafer bonding (DWB). In order to realize III–V-OI MOSFETs with ultrathin body and extremely thin body (ETB) InGaAs-OI channel layers and ultrathin BOX layers, we have developed an electron-cyclotron resonance (ECR) O 2 plasma-assisted DWB process with ECR sputtered SiO 2 BOX layers and a DWB process based on atomic-layer-deposition Al 2 O 3 (ALD-Al 2 O 3 ) BOX layers. It is essential to suppress micro-void generation during wafer bonding process to achieve excellent wafer bonding. We have found that major causes of micro-void generation in DWB processes with ECR-SiO 2 and ALD-Al 2 O 3 BOX layers are desorption of Ar and H 2 O gas, respectively. In order to suppress micro-void generation in the ECR-SiO 2 BOX layers, it is effective to introduce the outgas process before bonding wafers. On the other hand, it is a possible solution for suppressing micro-void generation in the ALD-Al 2 O 3 BOX layers to increase the deposition temperature of the ALD-Al 2 O 3 BOX layers. It is also another possible solution to deposit ALD-Al 2 O 3 BOX layers on thermally oxidized SiO 2 layers, which can absorb the desorption gas from ALD-Al 2 O 3 BOX layers. (invited paper)

  7. Density functional theory study of the structural and bonding mechanism of molecular oxygen (O2) with C3Si

    Science.gov (United States)

    Parida, Saroj K.; Behera, C.; Sahu, Sridhar

    2018-07-01

    The investigations of pure and heteroatom doped carbon clusters have created great interest because of their enormous prospective applications in various research zones, for example, optoelectronics, semiconductors, material science, energy storage devices, astro-science and so on. In this article, the interaction of molecular oxygen (O2) with C3Si has explored within a density functional theory (DFT). Different possible types of structure for C3SiO2 have collected. Among five different kinds of structure, the structure-1a, 1A1 is more energetically stable. The nature of the bonding of O2 and C3Si, in C3SiO2 has been studied by using Bader's topological analysis of the electron charge density distribution ρ(r) , Laplacian ∇2 ρ(r) and total energy density H(r) at the bond critical points (BCPs) of the structures within the framework of the atoms in molecules theory (AIM). The bonding mechanism of O2 and C3Si in C3SiO2 prompts to the fundamental understanding of the interaction of C3Si with oxygen molecule. It is interesting to note that, two types of bonding mechanism are established in same C3SiO2 system such as (i) shared-kind interactions (ii) closed-shell interactions. From various kinds of structure, Csbnd C bonds in all structures are shown as shared-kind interactions whereas Csbnd Si, Osbnd O bonds are classified as closed-shell type interactions with a certain degree of covalent character.

  8. The morphology of ceramic phases in B x C-SiC-Si infiltrated composites

    International Nuclear Information System (INIS)

    Hayun, S.; Frage, N.; Dariel, M.P.

    2006-01-01

    The present communication is concerned with the effect of the carbon source on the morphology of reaction bonded boron carbide (B 4 C). Molten silicon reacts strongly and rapidly with free carbon to form large, faceted, regular polygon-shaped SiC particles, usually embedded in residual silicon pools. In the absence of free carbon, the formation of SiC relies on carbon that originates from within the boron carbide particles. Examination of the reaction bonded boron carbide revealed a core-rim microstructure consisting of boron carbide particles surrounded by secondary boron carbide containing some dissolved silicon. This microstructure is generated as the outcome of a dissolution-precipitation process. In the course of the infiltration process molten Si dissolves some boron carbide until its saturation with B and C. Subsequently, precipitation of secondary boron carbide enriched with boron and silicon takes place. In parallel, elongated, strongly twinned, faceted SiC particles are generated by rapid growth along preferred crystallographic directions. This sequence of events is supported by X-ray diffraction and microcompositional analysis and well accounted for by the thermodynamic analysis of the ternary B-C-Si system. - Graphical abstract: Bright field TEM image of the rim area between two boron carbide grains

  9. Fabrication of mullite-bonded porous SiC ceramics from multilayer-coated SiC particles through sol-gel and in-situ polymerization techniques

    Science.gov (United States)

    Ebrahimpour, Omid

    In this work, mullite-bonded porous silicon carbide (SiC) ceramics were prepared via a reaction bonding technique with the assistance of a sol-gel technique or in-situ polymerization as well as a combination of these techniques. In a typical procedure, SiC particles were first coated by alumina using calcined powder and alumina sol via a sol-gel technique followed by drying and passing through a screen. Subsequently, they were coated with the desired amount of polyethylene via an in-situ polymerization technique in a slurry phase reactor using a Ziegler-Natta catalyst. Afterward, the coated powders were dried again and passed through a screen before being pressed into a rectangular mold to make a green body. During the heating process, the polyethylene was burnt out to form pores at a temperature of about 500°C. Increasing the temperature above 800°C led to the partial oxidation of SiC particles to silica. At higher temperatures (above 1400°C) derived silica reacted with alumina to form mullite, which bonds SiC particles together. The porous SiC specimens were characterized with various techniques. The first part of the project was devoted to investigating the oxidation of SiC particles using a Thermogravimetric analysis (TGA) apparatus. The effects of particle size (micro and nano) and oxidation temperature (910°C--1010°C) as well as the initial mass of SiC particles in TGA on the oxidation behaviour of SiC powders were evaluated. To illustrate the oxidation rate of SiC in the packed bed state, a new kinetic model, which takes into account all of the diffusion steps (bulk, inter and intra particle diffusion) and surface oxidation rate, was proposed. Furthermore, the oxidation of SiC particles was analyzed by the X-ray Diffraction (XRD) technique. The effect of different alumina sources (calcined Al2O 3, alumina sol or a combination of the two) on the mechanical, physical, and crystalline structure of mullite-bonded porous SiC ceramics was studied in the

  10. Effect of different parameters on machining of SiC/SiC composites via pico-second laser

    Energy Technology Data Exchange (ETDEWEB)

    Li, Weinan; Zhang, Ruoheng [State Key Laboratory of Transient Optics and Photonics, Xi’an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi’an, Shaanxi 10068 (China); Liu, Yongsheng, E-mail: yongshengliu@nwpu.edu.cn [Science and technology on Thermostructure Composite Materials Laboratory, Northwestern Polytechnical University, Xi’an, Shaanxi 710072 (China); Wang, Chunhui; Wang, Jing [Science and technology on Thermostructure Composite Materials Laboratory, Northwestern Polytechnical University, Xi’an, Shaanxi 710072 (China); Yang, Xiaojun [State Key Laboratory of Transient Optics and Photonics, Xi’an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi’an, Shaanxi 10068 (China); Cheng, Laifei [Science and technology on Thermostructure Composite Materials Laboratory, Northwestern Polytechnical University, Xi’an, Shaanxi 710072 (China)

    2016-02-28

    Graphical abstract: - Highlights: • The highlights of the manuscript include the following two aspects. • First, we found that the different machining modes (helical line scanning and single ring line scanning) and processing power of machining have remarkable effect on the surface morphology of the machined area, such as the shape, depth and the formation of different surface structures. • Secondly, we investigated that the debris consisted of C, Si and O was observed on the machined surface. • Some of the Si–C bonds of the SiC matrix and fibers would be transformed into Si–O bonds after machined, depending on the processing power. - Abstract: Pico-second laser plays an important role in modern machining technology, especially in machining high hardness materials. In this article, pico-second laser was utilized for irradiation on SiC/SiC composites, and effects of different processing parameters including the machining modes and laser power were discussed in detail. The results indicated that the machining modes and laser power had great effect on machining of SiC/SiC composites. Different types of surface morphology and structure were observed under helical line scanning and single ring line scanning, and the analysis of their formulation was discussed in detail. It was believed that the machining modes would be responsible to the different shapes of machining results at the same parameters. The processing power shall also influence the surface morphology and quality of machining results. In micro-hole drilling process, large amount of debris and fragments were observed within the micro-holes, and XPS analysis showed that there existed Si–O bonds and Si–C bonds, indicating that the oxidation during processing was incomplete. Other surface morphology, such as pores and pits were discussed as well.

  11. Determination of wafer bonding mechanisms for plasma activated SiN films with x-ray reflectivity

    Energy Technology Data Exchange (ETDEWEB)

    Hayashi, S [Department of Materials Science and Engineering, University of California, Los Angeles, CA 90095 (United States); Sandhu, R [Department of Materials Science and Engineering, University of California, Los Angeles, CA 90095 (United States); Wojtowicz, M [Northrop Grumman Space Technology, Redondo Beach, CA 90278 (United States); Sun, Y [Department of Chemical Engineering, University of California, Los Angeles, CA 90095 (United States); Hicks, R [Department of Chemical Engineering, University of California, Los Angeles, CA 90095 (United States); Goorsky, M S [Department of Materials Science and Engineering, University of California, Los Angeles, CA 90095 (United States)

    2005-05-21

    Specular and diffuse x-ray reflectivity measurements were employed for wafer bonding studies of surface and interfacial reactions in {approx}800 A thick SiN films deposited on III-V substrates. CuK{sub {alpha}}{sub 1} radiation was employed for these measurements. The as-deposited films show very low surface roughness and uniform, high density SiN. Reflectivity measurements show that an oxygen plasma treatment converts the nitride surface to a somewhat porous SiO{sub x} layer (67 A thick, at 80% of SiO{sub 2} density), with confirmation of the oxide formation from x-ray photoelectron spectroscopy. Reactions at the bonded interface of two oxygen plasma treated SiN layers were examined using a bonded structure from which one of the III-V wafers is removed. Reflectivity measurements of bonded structures annealed at 150 deg. C and 300 deg. C show an increase in the SiO{sub x} layer density and thickness and even a density gradient across this interface. The increase in density is correlated with an increase in bond strength, where after the 300 deg. C anneal, a high interfacial bond strength, exceeding the bulk strength, was achieved.

  12. C-C bond formation in the intramolecular Diels-Alder reaction of triene amides.

    Science.gov (United States)

    Benallou, Abdelilah; El Alaoui El Abdallaoui, Habib; Garmes, Hocine

    2018-02-01

    The mechanism nature of the intramolecular Diels-Alder reaction has been performed; and thus, the changes of C-C bond forming/breaking along IRC are characterized in this study. Conceptual DFT analyses of the most favorable adduct fused/exo shows that the flux electronic will take place from diene to dienophile moiety. Moreover, ELF topological analysis based on the electron density predicts that C-C bond is formed by the coupling of two pseudoradical centers generated at the most significant atoms of the molecules. However, C2 vs C3, also C1 and C4 interaction comes mainly from the global electron density transfer which takes place along the reaction. Two- stage one-step is the proposed mechanism of this reaction, the first stage aims for the formation of C2-C3 σ bond while the second stage aims for C1-C4 σ bond formation. Interestingly, the observed asynchronicity of this IMDA reaction due principally to the asymmetric reorganization of electron density at the most attractive centers.

  13. Mechanoactivation of chromium silicide formation in the SiC-Cr-Si system

    Directory of Open Access Journals (Sweden)

    Vlasova M.

    2002-01-01

    Full Text Available The processes of simultaneous grinding of the components of a SiC-Cr-Si mixture and further temperature treatment in the temperature range 1073-1793 K were studied by X-ray phase analysis, IR spectroscopy, electron microscopy, and X-ray microanalysis. It was established that, during grinding of the mixture, chromium silicides form. A temperature treatment completes the process. Silicide formation proceeds within the framework of the diffusion of silicon into chromium. In the presence of SiO2 in the mixture, silicide formation occurs also as a result of the reduction of silica by silicon and silicon carbide. The sintering of synthesized composite SiC-chromium silicides powders at a high temperature under a high pressure (T = 2073 K, P = 5 GPa is accompanied by the destruction of cc-SiC particles, the cc/3 transition in silicon carbide and deformation distortions of the lattices of chromium silicides.

  14. Development and Property Evaluation of Selected HfO2-Silicon and Rare Earth-Silicon Based Bond Coats and Environmental Barrier Coating Systems for SiC/SiC Ceramic Matrix Composites

    Science.gov (United States)

    Zhu, Dongming

    2016-01-01

    Ceramic environmental barrier coatings (EBC) and SiC/SiC ceramic matrix composites (CMCs) will play a crucial role in future aircraft propulsion systems because of their ability to significantly increase engine operating temperatures, improve component durability, reduce engine weight and cooling requirements. Advanced EBC systems for SiC/SiC CMC turbine and combustor hot section components are currently being developed to meet future turbine engine emission and performance goals. One of the significant material development challenges for the high temperature CMC components is to develop prime-reliant, high strength and high temperature capable environmental barrier coating bond coat systems, since the current silicon bond coat cannot meet the advanced EBC-CMC temperature and stability requirements. In this paper, advanced NASA HfO2-Si and rare earth Si based EBC bond coat EBC systems for SiC/SiC CMC combustor and turbine airfoil applications are investigated. High temperature properties of the advanced EBC systems, including the strength, fracture toughness, creep and oxidation resistance have been studied and summarized. The advanced NASA EBC systems showed some promise to achieve 1500C temperature capability, helping enable next generation turbine engines with significantly improved engine component temperature capability and durability.

  15. A comparative study of low energy radiation responses of SiC, TiC and ZrC

    International Nuclear Information System (INIS)

    Jiang, M.; Xiao, H.Y.; Zhang, H.B.; Peng, S.M.; Xu, C.H.; Liu, Z.J.; Zu, X.T.

    2016-01-01

    In this study, an ab initio molecular dynamics method is employed to compare the responses of SiC, TiC and ZrC to low energy irradiation. It reveals that C displacements are dominant in the cascade events of the three carbides. The associated defects in SiC are mainly Frenkel pairs and antisite defects, whereas damage end states in TiC and ZrC generally consist of Frenkel pairs and very few antisite defects are created. It is proposed that the susceptibility to antisite formation in SiC contributes to its crystalline-to-amorphous transformation under irradiation that is observed experimentally. The stronger radiation tolerance of TiC and ZrC than SiC can be originated from their different electronic structures, i.e., the C> and C> bonds are a mixture of covalent, metallic, and ionic character, whereas the C> bond is mainly covalent. The presented results provide underlying mechanisms for defect generation in SiC, TiC and ZrC, and advance the fundamental understanding of the radiation resistances of carbide materials.

  16. Electrically detected magnetic resonance of carbon dangling bonds at the Si-face 4H-SiC/SiO2 interface

    Science.gov (United States)

    Gruber, G.; Cottom, J.; Meszaros, R.; Koch, M.; Pobegen, G.; Aichinger, T.; Peters, D.; Hadley, P.

    2018-04-01

    SiC based metal-oxide-semiconductor field-effect transistors (MOSFETs) have gained a significant importance in power electronics applications. However, electrically active defects at the SiC/SiO2 interface degrade the ideal behavior of the devices. The relevant microscopic defects can be identified by electron paramagnetic resonance (EPR) or electrically detected magnetic resonance (EDMR). This helps to decide which changes to the fabrication process will likely lead to further increases of device performance and reliability. EDMR measurements have shown very similar dominant hyperfine (HF) spectra in differently processed MOSFETs although some discrepancies were observed in the measured g-factors. Here, the HF spectra measured of different SiC MOSFETs are compared, and it is argued that the same dominant defect is present in all devices. A comparison of the data with simulated spectra of the C dangling bond (PbC) center and the silicon vacancy (VSi) demonstrates that the PbC center is a more suitable candidate to explain the observed HF spectra.

  17. Synergistic effect of displacement damage, helium and hydrogen on microstructural change of SiC/SiC composites fabricated by reaction bonding process

    Energy Technology Data Exchange (ETDEWEB)

    Taguchi, T.; Igawa, N.; Wakai, E.; Jitsukawa, S. [Japan Atomic Energy Agency, Naga-gun, Ibaraki-ken (Japan); Hasegawa, A. [Tohoku Univ., Dept. of Quantum Science and Energy Engr., Sendai (Japan)

    2007-07-01

    Full text of publication follows: Continuous silicon carbide (SiC) fiber reinforced SiC matrix (SiC/SiC) composites are known to be attractive candidate materials for first wall and blanket components in fusion reactors. In the fusion environment, helium and hydrogen are produced and helium bubbles can be formed in the SiC by irradiation of 14-MeV neutrons. Authors reported the synergistic effect of helium and hydrogen as transmutation products on swelling behavior and microstructural change of the SiC/SiC composites fabricated by chemical vapor infiltration (CVI) process. Authors also reported about the fabrication of high thermal conductive SiC/SiC composites by reaction bonding (RB) process. The matrix fabricated by RB process has different microstructures such as bigger grain size of SiC and including Si phase as second phase from that by CVI process. It is, therefore, investigated the synergistic effect of displacement damage, helium and hydrogen as transmutation products on the microstructure of SiC/SiC composite by RB process in this study. The SiC/SiC composites by RB process were irradiated by the simultaneous triple ion irradiation (Si{sup 2+}, He{sup +} and H{sup +}) at 800 and 1000 deg. C. The displacement damage was induced by 6.0 MeV Si{sup 2+} ion irradiation up to 10 dpa. The microstructures of irradiated SiC/SiC composites by RB process were observed by TEM. The double layer of carbon and SiC as interphase between fiber and matrix by a chemical vapor deposition (CVD) was coated on SiC fibers in the SiC/SiC composites by RB process. The TEM observation revealed that He bubbles were formed both in the matrix by RB and SiC interphase by CVD process. Almost all He bubbles were formed at the grain boundary in SiC interphase by CVD process. On the other hand, He bubbles were formed both at the grain boundary and in Si grain of the matrix by RB process. The average size of He bubbles in the matrix by RB was smaller than that in SiC interphase by CVD

  18. Si/C and H coadsorption at 4H-SiC{0001} surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Wachowicz, E., E-mail: elwira@ifd.uni.wroc.pl [Institute of Experimental Physics, University of Wrocław, Plac M. Borna 9, PL-50-204 Wrocław (Poland); Interdisciplinary Centre for Mathematical and Computational Modelling, University of Warsaw, Pawińskiego 5a, PL-02-106 Warsaw (Poland)

    2016-06-15

    Highlights: • Si on C-terminated and C on Si-terminated surface adsorb in the H{sub 3} hollow site. • The preferred adsorption site is in contrary to the stacking order of bulk crystal. • The presence of hydrogen increases the adsorption energy of Si/C. • Hydrogen weakens the bonds between the adsorbed Si or C and the surface. • Carbon adsorbs on top of the surface carbon on the C-terminated surface. • With both C and H on Si-terminated surface the surface state vanishes. - Abstract: Density functional theory (DFT) study of adsorption of 0.25 monolayer of either Si or C on 4H-SiC{0001} surfaces is presented. The adsorption in high-symmetry sites on both Si- and C-terminated surfaces was examined and the influence of the preadsorbed 0.25 ML of hydrogen on the Si/C adsorption was considered. It was found out that for Si on C-terminated surface and C on Si-terminated the most favourable is threefolded adsorption site on both clean and H-precovered surface. This is contrary to the bulk crystal stacking order which would require adsorption on top of the topmost surface atom. In those cases, the presence of hydrogen weakens the bonding of the adsorbate. Carbon on the C-terminated surface, only binds on-top of the surface atom. The C−C bond-length is almost the same for the clean surface and for one with H and equals to ∼1.33 Å which is shorter by ∼0.2 than in diamond. The analysis of the electronic structure changes under adsorption is also presented.

  19. Reaction mechanisms at 4H-SiC/SiO2 interface during wet SiC oxidation

    Science.gov (United States)

    Akiyama, Toru; Hori, Shinsuke; Nakamura, Kohji; Ito, Tomonori; Kageshima, Hiroyuki; Uematsu, Masashi; Shiraishi, Kenji

    2018-04-01

    The reaction processes at the interface between SiC with 4H structure (4H-SiC) and SiO2 during wet oxidation are investigated by electronic structure calculations within the density functional theory. Our calculations for 4H-SiC/SiO2 interfaces with various orientations demonstrate characteristic features of the reaction depending on the crystal orientation of SiC: On the Si-face, the H2O molecule is stable in SiO2 and hardly reacts with the SiC substrate, while the O atom of H2O can form Si-O bonds at the C-face interface. Two OH groups are found to be at least necessary for forming new Si-O bonds at the Si-face interface, indicating that the oxidation rate on the Si-face is very low compared with that on the C-face. On the other hand, both the H2O molecule and the OH group are incorporated into the C-face interface, and the energy barrier for OH is similar to that for H2O. By comparing the calculated energy barriers for these reactants with the activation energies of oxide growth rate, we suggest the orientation-dependent rate-limiting processes during wet SiC oxidation.

  20. Thermal effects on the mechanical properties of SiC fiber reinforced reaction bonded silicon nitride matrix (SiC/RBSN) composites

    Science.gov (United States)

    Bhatt, R. T.; Phillips, R. E.

    1988-01-01

    The elevated temperature four-point flexural strength and the room temperature tensile and flexural strength properties after thermal shock were measured for ceramic composites consisting of 30 vol pct uniaxially aligned 142 micron diameter SiC fibers in a reaction bonded Si3N4 matrix. The elevated temperature strengths were measured after 15 min of exposure in air at temperatures to 1400 C. Thermal shock treatment was accomplished by heating the composite in air for 15 min at temperatures to 1200 C and then quenching in water at 25 C. The results indicate no significant loss in strength properties either at temperature or after thermal shock when compared with the strength data for composites in the as-fabricated condition.

  1. Pulsed laser deposition of SiC thin films at medium substrate temperatures

    International Nuclear Information System (INIS)

    Katharria, Y.S.; Kumar, Sandeep; Choudhary, R.J.; Prakash, Ram; Singh, F.; Lalla, N.P.; Phase, D.M.; Kanjilal, D.

    2008-01-01

    Systematic studies of thin silicon carbide (SiC) films deposited on Si (100) substrates using pulsed laser deposition technique at room temperature, 370 deg. C and 480 deg. C are carried out. X-ray photoelectron spectroscopy showed the formation of SiC bonds in the films at these temperatures along with some graphitic carbon clusters. Fourier transform infrared analysis also confirmed the formation of SiC nanocrystallites in the films. Transmission electron microscopy and electron diffraction were used to study the structural properties of nanocrystallites formed in the films. Surface morphological analysis using atomic force microscopy revealed the growth of smooth films

  2. Mechanism of bonding and debonding using surface activated bonding method with Si intermediate layer

    Science.gov (United States)

    Takeuchi, Kai; Fujino, Masahisa; Matsumoto, Yoshiie; Suga, Tadatomo

    2018-04-01

    Techniques of handling thin and fragile substrates in a high-temperature process are highly required for the fabrication of semiconductor devices including thin film transistors (TFTs). In our previous study, we proposed applying the surface activated bonding (SAB) method using Si intermediate layers to the bonding and debonding of glass substrates. The SAB method has successfully bonded glass substrates at room temperature, and the substrates have been debonded after heating at 450 °C, in which TFTs are fabricated on thin glass substrates for LC display devices. In this study, we conducted the bonding and debonding of Si and glass in order to understand the mechanism in the proposed process. Si substrates are also successfully bonded to glass substrates at room temperature and debonded after heating at 450 °C using the proposed bonding process. By the composition analysis of bonding interfaces, it is clarified that the absorbed water on the glass forms interfacial voids and cause the decrease in bond strength.

  3. Low-temperature Au/a-Si wafer bonding

    International Nuclear Information System (INIS)

    Jing, Errong; Xiong, Bin; Wang, Yuelin

    2011-01-01

    The Si/SiO 2 /Ti/Au–Au/Ti/a-Si/SiO 2 /Si bonding structure, which can also be used for the bonding of non-silicon material, was investigated for the first time in this paper. The bond quality test showed that the bond yield, bond repeatability and average shear strength are higher for this bonding structure. The interfacial microstructure analysis indicated that the Au-induced crystallization of the amorphous silicon process leads to big Si grains extending across the bond interface and Au filling the other regions of the bond interface, which result into a strong and void-free bond interface. In addition, the Au-induced crystallization reaction leads to a change in the IR images of the bond interface. Therefore, the IR microscope can be used to evaluate and compare the different bond strengths qualitatively. Furthermore, in order to verify the superiority of the bonding structure, the Si/SiO 2 /Ti/Au–a-Si/SiO 2 /Si (i.e. no Ti/Au layer on the a-Si surface) and Si/SiO 2 /Ti/Au–Au/Ti/SiO 2 /Si bonding structures (i.e. Au thermocompression bonding) were also investigated. For the Si/SiO 2 /Ti/Au–a-Si/SiO 2 /Si bonding structure, the poor bond quality is due to the native oxide layer on the a-Si surface, and for the Si/SiO 2 /Ti/Au–Au/Ti/SiO 2 /Si bonding structure, the poor bond quality is caused by the wafer surface roughness which prevents intimate contact and limits the interdiffusion at the bond interface.

  4. Photoelectron Diffraction Imaging for C2H2 and C2H4 Chemisorbed on Si(100) Reveals a New Bonding Configuration

    International Nuclear Information System (INIS)

    Xu, S. H.; Keeffe, M.; Yang, Y.; Chen, C.; Yu, M.; Lapeyre, G. J.; Rotenberg, E.; Denlinger, J.; Yates, J. T. Jr.

    2000-01-01

    A new adsorption site for adsorbed acetylene on Si(100) is observed by photoelectron imaging based on the holographic principle. The diffraction effects in the carbon 1s angle-resolved photoemission are inverted (including the small-cone method) to obtain an image of the atom's neighboring carbon. The chemisorbed acetylene molecule is bonded to four silicon surface atoms. In contrast to the C 2 H 2 case, the image for adsorbed C 2 H 4 shows it bonded to two Si surface atoms. (c) 2000 The American Physical Society

  5. Formation of SiC using low energy CO2 ion implantation in silicon

    International Nuclear Information System (INIS)

    Sari, A.H.; Ghorbani, S.; Dorranian, D.; Azadfar, P.; Hojabri, A.R.; Ghoranneviss, M.

    2008-01-01

    Carbon dioxide ions with 29 keV energy were implanted into (4 0 0) high-purity p-type silicon wafers at nearly room temperature and doses in the range between 1 x 10 16 and 3 x 10 18 ions/cm 2 . X-ray diffraction analysis (XRD) was used to characterize the formation of SiC in implanted Si substrate. The formation of SiC and its crystalline structure obtained from above mentioned technique. Topographical changes induced on silicon surface, grains and evaluation of them at different doses observed by atomic force microscopy (AFM). Infrared reflectance (IR) and Raman scattering measurements were used to reconfirm the formation of SiC in implanted Si substrate. The electrical properties of implanted samples measured by four point probe technique. The results show that implantation of carbon dioxide ions directly leads to formation of 15R-SiC. By increasing the implantation dose a significant changes were also observed on roughness and sheet resistivity properties.

  6. The Au/Si eutectic bonding compatibility with KOH etching for 3D devices fabrication

    Science.gov (United States)

    Liang, Hengmao; Liu, Mifeng; Liu, Song; Xu, Dehui; Xiong, Bin

    2018-01-01

    KOH etching and Au/Si eutectic bonding are cost-efficient technologies for 3D device fabrication. Aimed at investigating the process compatibility of KOH etching and Au/Si bonding, KOH etching tests have been carried out for Au/bulk Si and Au/amorphous Si (a-Si) bonding wafers in this paper. For the Au/bulk Si bonding wafer, a serious underetch phenomenon occurring on the damage layer in KOH etching definitely results in packaging failure. In the microstructure analysis, it is found that the formation of the damage layer between the bonded layer and bulk Si is attributed to the destruction of crystal Si lattices in Au/bulk Si eutectic reaction. Considering the occurrence of underetch for Au/Si bonding must meet two requirements: the superfluous Si and the defective layer near the bonded layer, the Au/a-Si bonding by regulating the a-Si/Au thickness ratio is presented in this study. Only when the a-Si/Au thickness ratio is relatively low are there not underetch phenomena, of which the reason is the full reaction of the a-Si layer avoiding the formation of the damage layer for easy underetch. Obviously, the Au/a-Si bonding via choosing a moderate a-Si/Au thickness ratio (⩽1.5:1 is suggested) could be reliably compatible with KOH etching, which provides an available and low-cost approach for 3D device fabrication. More importantly, the theory of the damage layer proposed in this study can be naturally applied to relevant analyses on the eutectic reaction of other metals and single crystal materials.

  7. Impact of SiO2 on Al–Al thermocompression wafer bonding

    International Nuclear Information System (INIS)

    Malik, Nishant; Finstad, Terje G; Schjølberg-Henriksen, Kari; Poppe, Erik U; Taklo, Maaike M V

    2015-01-01

    Al–Al thermocompression bonding suitable for wafer level sealing of MEMS devices has been investigated. This paper presents a comparison of thermocompression bonding of Al films deposited on Si with and without a thermal oxide (SiO 2 film). Laminates of diameter 150 mm containing device sealing frames of width 200 µm were realized. The wafers were bonded by applying a bond force of 36 or 60 kN at bonding temperatures ranging from 300–550 °C for bonding times of 15, 30 or 60 min. The effects of these process variations on the quality of the bonded laminates have been studied. The bond quality was estimated by measurements of dicing yield, tensile strength, amount of cohesive fracture in Si and interfacial characterization. The mean bond strength of the tested structures ranged from 18–61 MPa. The laminates with an SiO 2 film had higher dicing yield and bond strength than the laminates without SiO 2 for a 400 °C bonding temperature. The bond strength increased with increasing bonding temperature and bond force. The laminates bonded for 30 and 60 min at 400 °C and 60 kN had similar bond strength and amount of cohesive fracture in the bulk silicon, while the laminates bonded for 15 min had significantly lower bond strength and amount of cohesive fracture in the bulk silicon. (paper)

  8. Si-O compound formation by oxygen ion implantation into silicon

    International Nuclear Information System (INIS)

    Hensel, E.; Wollschlaeger, K.; Kreissig, U.; Skorupa, W.; Schulze, D.; Finster, J.

    1985-01-01

    High dose oxygen ion implantation into silicon at 30 keV was performed to produce understoichiometric and stoichiometric surface oxide layers of approx. 160 nm thickness. The oxygen depth profile and oxide stoichiometry was determined by RBS and XPS. Si-O compound formation was found by IR spectroscopy and XPS in the unannealed samples as well as after target heating, furnace or flash lamp annealing. As implanted understoichiometric layers consist of random bonding like SiOsub(x) (O 2 after annealing. Unannealed stoichiometric layers are bond strained SiO 2 . The activation energies of demixing and of the annealing of bond strains are determined to 0.19 and 0.13 eV, respectively. The removing of bond strains occurs at temperatures >= 800 C in a time shorter than 1 s. The SiO 2 /Si transition region of unannealed stoichiometric layers consists of SiOsub(x) with an extent of about 10 nm. After annealing this extent diminishes to 0.8 to 1 nm in consequence of oxidation by excess oxygen from the overstoichiometric oxide region. This thickness is comparable with that of thermal oxide. (author)

  9. Direct insight into grains formation in Si layers grown on 3C-SiC by chemical vapor deposition

    International Nuclear Information System (INIS)

    Khazaka, Rami; Portail, Marc; Vennéguès, Philippe; Alquier, Daniel; Michaud, Jean François

    2015-01-01

    Graphical abstract: In this contribution, we demonstrated the influence of the 3C-SiC layer on the subsequent growth of Si epilayers. We were able to give a direct evidence that the rotation in the Si epilayer of 90° around the growth direction occurs exactly on the termination of an antiphase boundary in the 3C-SiC layer as shown in the figure above. Thus, increasing the layer thickness of the 3C-SiC leads to a direct improvement of the crystalline quality of the subsequent Si epilayer. (a) Cross-section bright-field TEM image of the Si/3C-SiC layer stack along two 3C-SiC zone axes [1 −1 0] and [1 1 0] (equivalent to [1 −1 1] and [1 1 2] in Si, respectively), (b) dark field image selecting a (2 0 −2) electron diffraction spot indicated by the black circle in the SAED shown as inset, (c) dark field image selecting a (−1 1 −1) electron diffraction spot indicated by the black circle in the SAED shown as inset. The dotted white line in the images show the position of the defect in the 3C-SiC layer. - Abstract: This work presents a structural study of silicon (Si) thin films grown on cubic silicon carbide (3C-SiC) by chemical vapor deposition. The presence of grains rotated by 90° around the growth direction in the Si layer is directly related to the presence of antiphase domains on the 3C-SiC surface. We were able to provide a direct evidence that the 90° rotation of Si grains around the growth direction occurs exactly on the termination of antiphase boundaries (APBs) in 3C-SiC layer. Increasing the 3C-SiC thickness reduces the APBs density on 3C-SiC surface leading to a clear improvement of the uppermost Si film crystal quality. Furthermore, we observed by high resolution plan-view TEM images the presence of hexagonal Si domains limited to few nm in size. These hexagonal Si domains are inclusions in small Si grains enclosed in larger ones rotated by 90°. Finally, we propose a model of grains formation in the Si layer taking into consideration the effect

  10. Thermal stability and chemical bonding states of AlOxNy/Si gate stacks revealed by synchrotron radiation photoemission spectroscopy

    International Nuclear Information System (INIS)

    He, G.; Toyoda, S.; Shimogaki, Y.; Oshima, M.

    2010-01-01

    Annealing-temperature dependence of the thermal stability and chemical bonding states of AlO x N y /SiO 2 /Si gate stacks grown by metalorganic chemical vapor deposition (MOCVD) using new chemistry was investigated by synchrotron radiation photoemission spectroscopy (SRPES). Results have confirmed the formation of the AlN and AlNO compounds in the as-deposited samples. Annealing the AlO x N y samples in N 2 ambient in 600-800 deg. C promotes the formation of SiO 2 component. Meanwhile, there is no formation of Al-O-Si and Al-Si binding states, suggesting no interdiffusion of Al with the Si substrate. A thermally induced reaction between Si and AlO x N y to form volatile SiO and Al 2 O is suggested to be responsible for the full disappearance of the Al component that accompanies annealing at annealing temperature of 1000 deg. C. The released N due to the breakage of the Al-N bonding will react with the SiO 2 interfacial layer and lead to the formation of the Si 3 -N-O/Si 2 -N-O components at the top of Si substrate. These results indicate high temperature processing induced evolution of the interfacial chemistry and application range of AlO x N y /Si gate stacks in future CMOS devices.

  11. Oxidation effects on the mechanical properties of SiC fiber-reinforced reaction-bonded silicon nitride matrix composites

    Science.gov (United States)

    Bhatt, Ramakrishna T.

    1989-01-01

    The room temperature mechanical properties of SiC fiber reinforced reaction bonded silicon nitride composites were measured after 100 hrs exposure at temperatures to 1400 C in nitrogen and oxygen environments. The composites consisted of approx. 30 vol percent uniaxially aligned 142 micron diameter SiC fibers in a reaction bonded Si3N4 matrix. The results indicate that composites heat treated in a nitrogen environment at temperatures to 1400 C showed deformation and fracture behavior equivalent to that of the as-fabricated composites. Also, the composites heat treated in an oxidizing environment beyond 400 C yielded significantly lower tensile strength values. Specifically in the temperature range from 600 to 1000 C, composites retained approx. 40 percent of their as-fabricated strength, and those heat treated in the temperatures from 1200 to 1400 C retained 70 percent. Nonetheless, for all oxygen heat treatment conditions, composite specimens displayed strain capability beyond the matrix fracture stress; a typical behavior of a tough composite.

  12. M3FT-16OR020202112 - Report on viability of hydrothermal corrosion resistant SiC/SiC Joint development

    Energy Technology Data Exchange (ETDEWEB)

    Katoh, Yutai [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Koyanagi, Takaaki [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Kiggans Jr, James O. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Terrani, Kurt A. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

    2016-06-30

    Hydrothermal corrosion of four types of the silicon carbide (SiC) to SiC plate joints were investigated under PWR and BWR relevant chemical conditions without irradiation. The joints were formed by metal diffusion bonding using molybdenum or titanium interlayer, reaction sintering using Ti-Si-C system, and SiC nanopowder sintering. Most of the formed joints withstood the corrosion tests for five weeks. The recession of the SiC substrates was limited. Based on the recession rate of the bonding layers, it was concluded that all the joints except for the molybdenum diffusion bond are promising under the reducing activity environments. The SiC nanopowder sintered joint was the most corrosion tolerant under the oxidizing activity environment among the four joints.

  13. Designing new catalytic C-C and C-N bond formations promoted by organoactinides

    International Nuclear Information System (INIS)

    Eisen, M.S.; Straub, T.; Haskel, A.

    1998-01-01

    Organoactinides of the type Cp 2 * AcMe 2 (Cp * =C 5 Me 5 ; Ac=Th; U) are active catalytic precursors for the oligomerization of terminal alkynes HC≡CR (R=alkyl, aryl, SiMe 3 ). The regioselectivity and the extent of oligomerization depend strongly on the alkyne substituent R, whereas the catalytic reactivity is similar for both organoactinides. Reaction with tert-butylacetylene yields regioselectively the E-2,4-disubstituted 1-buten-3-yne dimer whereas trimethylsilylacetylene is regioselective trimerized to the E,E-1,4,6-tris(trimethylsilyl)-1,3-hexa diene-5-yne, with small amounts (3-5%) of the corresponding E-2,4-disubstituted 1-buten-3-yne dimer. Oligomerization with less bulky alkyl and aryl substituted alkynes produces a mixture of higher oligomers with no regioselectivity. Using the Cp 2 * ThMe 2 catalyst, we have recently developed a strategic method to control the extent and in some cases the regioselectivity of the catalyzed oligomerization of nonbulky terminal alkynes to dimers and/or trimers. The metallocene catalytic precursors ensure the selective synthesis of small oligomers by the addition of specific amines. Catalytic ''tailoring'' to dimer and trimers can be achieved by using small or bulky amines, respectively. Kinetic and mechanistic data for the controlling experiments argue that the turnover-limiting step involves the acetylide actinide complex formation with the rapid insertion of the alkyne and protonolysis by the amine. The analog Cp 2 * UMe 2 in the presence of primary amines induce the selective C-N bond formation, producing enamines which are tautomerized to the corresponding imines. (orig.)

  14. (001) 3C SiC/Ni contact interface: In situ XPS observation of annealing induced Ni_2Si formation and the resulting barrier height changes

    International Nuclear Information System (INIS)

    Tengeler, Sven; Kaiser, Bernhard; Chaussende, Didier; Jaegermann, Wolfram

    2017-01-01

    Highlights: • Schottky behavior (Φ_B = 0.41 eV) and Fermi level pining were found pre annealing. • Ni_2Si formation was confirmed for 5 min at 850 °C. • 3C/Ni_2Si Fermi level alignment is responsible for ohmic contact behavior. • Wet chemical etching (Si–OH/C–H termination) does not impair Ni_2Si formation. - Abstract: The electronic states of the (001) 3C SiC/Ni interface prior and post annealing are investigated via an in situ XPS interface experiment, allowing direct observation of the induced band bending and the transformation from Schottky to ohmic behaviour for the first time. A single domain (001) 3C SiC sample was prepared via wet chemical etching. Nickel was deposited on the sample in multiple in situ deposition steps via RF sputtering, allowing observation of the 3C SiC/Ni interface formation. Over the course of the experiments, an upward band bending of 0.35 eV was observed, along with defect induced Fermi level pinning. This indicates a Schottky type contact behaviour with a barrier height of 0.41 eV. The subsequent annealing at 850 °C for 5 min resulted in the formation of a Ni_2Si layer and a reversal of the band bending to 0.06 eV downward. Thus explaining the ohmic contact behaviour frequently reported for annealed n-type 3C SiC/Ni contacts.

  15. Mechanical behavior of SiCf/SiC composites with alternating PyC/SiC multilayer interphases

    International Nuclear Information System (INIS)

    Yu, Haijiao; Zhou, Xingui; Zhang, Wei; Peng, Huaxin; Zhang, Changrui

    2013-01-01

    Highlights: ► Superior combination of flexural strength and fracture toughness of the 3D SiC/SiC composite was achieved by interface tailoring. ► Resulted composite possesses a much higher flexural strength and fracture toughness than its counterparts in literatures. ► Mechanisms that PyC/SiC multilayer coatings improve the mechanical properties were illustrated. -- Abstract: In order to tailor the fiber–matrix interface of continuous silicon carbide fiber reinforced silicon carbide (SiC f /SiC) composites for improved fracture toughness, alternating pyrolytic carbon/silicon carbide (PyC/SiC) multilayer coatings were applied to the KD-I SiC fibers using chemical vapor deposition (CVD) method. Three dimensional (3D) KD-I SiC f /SiC composites reinforced by these coated fibers were fabricated using a precursor infiltration and pyrolysis (PIP) process. The interfacial characteristics were determined by the fiber push-out test and microstructural examination using scanning electron microscopy (SEM). The effect of interface coatings on composite mechanical properties was evaluated by single-edge notched beam (SENB) test and three-point bending test. The results indicate that the PyC/SiC multilayer coatings led to an optimum interfacial bonding between fibers and matrix and greatly improved the fracture toughness of the composites.

  16. Investigation into solubility and diffusion in SiC-NbC, SiC-TiC, SiC-ZrC systems

    International Nuclear Information System (INIS)

    Safaraliev, G.K.; Tairov, Yu.M.; Tsvetkov, V.F.; Shabanov, Sh.Sh.

    1991-01-01

    An investigation is carried out which demonstrates solid-phase interaction between SiC and NbC, TiC and ZrC monocrystals. The monocrystals are subjected to hot pressing in SiC powder with dispersity of 5x10 -6 m. The pressing temperature is 2270-2570 K and pressure is varied in the range of 20-40 MPa. Element composition and the distribution profile in a thin layer near the boundary of SiC-NbC, SiC-TiC and SiC-ZrC are investigated by the Anger spectroscopy method. The obtained results permit to make the conclusion in the possibility of solid solution formation in investigated systems

  17. C—C bond formation in the intramolecular Diels-Alder reaction of triene amides

    Directory of Open Access Journals (Sweden)

    Abdelilah Benallou

    2018-02-01

    Full Text Available The mechanism nature of the intramolecular Diels–Alder reaction has been performed; and thus, the changes of C—C bond forming/breaking along IRC are characterized in this study. Conceptual DFT analyses of the most favorable adduct fused/exo shows that the flux electronic will take place from diene to dienophile moiety. Moreover, ELF topological analysis based on the electron density predicts that C—C bond is formed by the coupling of two pseudoradical centers generated at the most significant atoms of the molecules. However, C2 vs C3, also C1 and C4 interaction comes mainly from the global electron density transfer which takes place along the reaction. Two- stage one-step is the proposed mechanism of this reaction, the first stage aims for the formation of C2—C3 σ bond while the second stage aims for C1—C4 σ bond formation. Interestingly, the observed asynchronicity of this IMDA reaction due principally to the asymmetric reorganization of electron density at the most attractive centers.

  18. Formation of permeation barriers on ceramic SiC/SiC composites

    International Nuclear Information System (INIS)

    Racault, C.; Fenici, P.

    1996-01-01

    The effectiveness as permeation barriers of the following CVD and PVD (sputtering) coatings has been investigated: TiC+Al 2 O 3 (CVD), SiC(CVD), SiO 2 (CVD), TiN(CVD), TiN(CVD)+TiN(PVD) and SiC(CVD)+Al 2 O 3 (PVD). The substrate material was a SiC/SiC composite, proposed as low activation structural material for fusion applications. Permeation measurements were performed in the temperature range 300-750 K using deuterium at pressures in the range 0.5-150 kPa. A linear dependence of permeation rate on pressure was measured. The efficiency of the coatings as deuterium permeation barriers is discussed in terms of coating microstructure. The best result was obtained with a bilayer of TiN(CVD) (15 μm) +TiN(PVD) (8 μm). (orig.)

  19. Ab initio computational study of –N-C and –O-C bonding formation : functional group modification reaction based chitosan

    Science.gov (United States)

    Siahaan, P.; Salimah, S. N. M.; Sipangkar, M. J.; Hudiyanti, D.; Djunaidi, M. C.; Laksitorini, M. D.

    2018-04-01

    Chitosan application in pharmaceutics and cosmeceutics industries is limited by its solubility issue. Modification of -NH2 and -OH fuctional groups of chitosan by adding carboxyl group has been shown to improve its solubility and application. Attempt to synthesize carboxymethyl chitosan (CMC) from monocloroacetic acid (MCAA) has been done prior this report. However no information is available wether –OH (-O-C bonding formation) or -NH2 (-N-C bonding formation) is the preference for - CH2COOH to attach. In the current study, the reaction mechanism between chitosan and MCAA reactants into carboxymethyl chitosan (CMC) was examined by computational approach. Dimer from of chitosan used as a molecular model in calculation All the molecular structure involved in the reaction mechanism was optimized by ab initio computational on the theory and basis set HF/6-31G(d,p). The results showed that the - N-C bonding formation via SN2 than the -O-C bonding formation via SN2 which have activation energy 469.437 kJ/mol and 533.219 kJ/mol respectively. However, the -O-C bonding formation more spontaneous than the -N-C bonding formation because ΔG the formation of O-CMC-2 reaction is more negative than ΔG of formation N-CMC-2 reaction is -4.353 kJ/mol and -1.095 kJ/mol respectively. The synthesis of N,O-CMC first forms -O-CH2COOH, then continues to form -NH-CH2COOH. This information is valuable to further optimize the reaction codition for CMC synthesis.

  20. Eutectic and solid-state wafer bonding of silicon with gold

    International Nuclear Information System (INIS)

    Abouie, Maryam; Liu, Qi; Ivey, Douglas G.

    2012-01-01

    Highlights: ► Eutectic and solid-state Au-Si bonding are compared for both a-Si and c-Si samples. ► Exchange of a-Si and Au layer was observed in both types of bonded samples. ► Use of c-Si for bonding resulted in formation of craters at the Au/c-Si interface. ► Solid-state Au-Si bonding produces better bonds in terms of microstructure. - Abstract: The simple Au-Si eutectic, which melts at 363 °C, can be used to bond Si wafers. However, faceted craters can form at the Au/Si interface as a result of anisotropic and non-uniform reaction between Au and crystalline silicon (c-Si). These craters may adversely affect active devices on the wafers. Two possible solutions to this problem were investigated in this study. One solution was to use an amorphous silicon layer (a-Si) that was deposited on the c-Si substrate to bond with the Au. The other solution was to use solid-state bonding instead of eutectic bonding, and the wafers were bonded at a temperature (350 °C) below the Au-Si eutectic temperature. The results showed that the a-Si layer prevented the formation of craters and solid-state bonding not only required a lower bonding temperature than eutectic bonding, but also prevented spill out of the solder resulting in strong bonds with high shear strength in comparison with eutectic bonding. Using amorphous silicon, the maximum shear strength for the solid-state Au-Si bond reached 15.2 MPa, whereas for the eutectic Au-Si bond it was 13.2 MPa.

  1. Nano-SiC region formation in (100) Si-on-insulator substrate: Optimization of hot-C+-ion implantation process to improve photoluminescence intensity

    Science.gov (United States)

    Mizuno, Tomohisa; Omata, Yuhsuke; Kanazawa, Rikito; Iguchi, Yusuke; Nakada, Shinji; Aoki, Takashi; Sasaki, Tomokazu

    2018-04-01

    We experimentally studied the optimization of the hot-C+-ion implantation process for forming nano-SiC (silicon carbide) regions in a (100) Si-on-insulator substrate at various hot-C+-ion implantation temperatures and C+ ion doses to improve photoluminescence (PL) intensity for future Si-based photonic devices. We successfully optimized the process by hot-C+-ion implantation at a temperature of about 700 °C and a C+ ion dose of approximately 4 × 1016 cm-2 to realize a high intensity of PL emitted from an approximately 1.5-nm-thick C atom segregation layer near the surface-oxide/Si interface. Moreover, atom probe tomography showed that implanted C atoms cluster in the Si layer and near the oxide/Si interface; thus, the C content locally condenses even in the C atom segregation layer, which leads to SiC formation. Corrector-spherical aberration transmission electron microscopy also showed that both 4H-SiC and 3C-SiC nanoareas near both the surface-oxide/Si and buried-oxide/Si interfaces partially grow into the oxide layer, and the observed PL photons are mainly emitted from the surface SiC nano areas.

  2. (001) 3C SiC/Ni contact interface: In situ XPS observation of annealing induced Ni{sub 2}Si formation and the resulting barrier height changes

    Energy Technology Data Exchange (ETDEWEB)

    Tengeler, Sven, E-mail: stengeler@surface.tu-darmstadt.de [Institute of Material Science, Technische Universität Darmstadt, 64287 Darmstadt (Germany); Univ. Grenoble Alpes, CNRS, LMGP, F-38000 Grenoble (France); Kaiser, Bernhard [Institute of Material Science, Technische Universität Darmstadt, 64287 Darmstadt (Germany); Chaussende, Didier [Univ. Grenoble Alpes, CNRS, LMGP, F-38000 Grenoble (France); Jaegermann, Wolfram [Institute of Material Science, Technische Universität Darmstadt, 64287 Darmstadt (Germany)

    2017-04-01

    Highlights: • Schottky behavior (Φ{sub B} = 0.41 eV) and Fermi level pining were found pre annealing. • Ni{sub 2}Si formation was confirmed for 5 min at 850 °C. • 3C/Ni{sub 2}Si Fermi level alignment is responsible for ohmic contact behavior. • Wet chemical etching (Si–OH/C–H termination) does not impair Ni{sub 2}Si formation. - Abstract: The electronic states of the (001) 3C SiC/Ni interface prior and post annealing are investigated via an in situ XPS interface experiment, allowing direct observation of the induced band bending and the transformation from Schottky to ohmic behaviour for the first time. A single domain (001) 3C SiC sample was prepared via wet chemical etching. Nickel was deposited on the sample in multiple in situ deposition steps via RF sputtering, allowing observation of the 3C SiC/Ni interface formation. Over the course of the experiments, an upward band bending of 0.35 eV was observed, along with defect induced Fermi level pinning. This indicates a Schottky type contact behaviour with a barrier height of 0.41 eV. The subsequent annealing at 850 °C for 5 min resulted in the formation of a Ni{sub 2}Si layer and a reversal of the band bending to 0.06 eV downward. Thus explaining the ohmic contact behaviour frequently reported for annealed n-type 3C SiC/Ni contacts.

  3. Renewable Formate from C-H Bond Formation with CO2: Using Iron Carbonyl Clusters as Electrocatalysts.

    Science.gov (United States)

    Loewen, Natalia D; Neelakantan, Taruna V; Berben, Louise A

    2017-09-19

    As a society, we are heavily dependent on nonrenewable petroleum-derived fuels and chemical feedstocks. Rapid depletion of these resources and the increasingly evident negative effects of excess atmospheric CO 2 drive our efforts to discover ways of converting excess CO 2 into energy dense chemical fuels through selective C-H bond formation and using renewable energy sources to supply electrons. In this way, a carbon-neutral fuel economy might be realized. To develop a molecular or heterogeneous catalyst for C-H bond formation with CO 2 requires a fundamental understanding of how to generate metal hydrides that selectively donate H - to CO 2 , rather than recombining with H + to liberate H 2 . Our work with a unique series of water-soluble and -stable, low-valent iron electrocatalysts offers mechanistic and thermochemical insights into formate production from CO 2 . Of particular interest are the nitride- and carbide-containing clusters: [Fe 4 N(CO) 12 ] - and its derivatives and [Fe 4 C(CO) 12 ] 2- . In both aqueous and mixed solvent conditions, [Fe 4 N(CO) 12 ] - forms a reduced hydride intermediate, [H-Fe 4 N(CO) 12 ] - , through stepwise electron and proton transfers. This hydride selectively reacts with CO 2 and generates formate with >95% efficiency. The mechanism for this transformation is supported by crystallographic, cyclic voltammetry, and spectroelectrochemical (SEC) evidence. Furthermore, installation of a proton shuttle onto [Fe 4 N(CO) 12 ] - facilitates proton transfer to the active site, successfully intercepting the hydride intermediate before it reacts with CO 2 ; only H 2 is observed in this case. In contrast, isoelectronic [Fe 4 C(CO) 12 ] 2- features a concerted proton-electron transfer mechanism to form [H-Fe 4 C(CO) 12 ] 2- , which is selective for H 2 production even in the presence of CO 2 , in both aqueous and mixed solvent systems. Higher nuclearity clusters were also studied, and all are proton reduction electrocatalysts, but none

  4. Joining of pressureless-sintered SiC to stainless steel using Ag-Cu alloy and insert-metals

    International Nuclear Information System (INIS)

    Yano, Toyohiko; Takada, Naohiro; Iseki, Takayoshi

    1987-01-01

    Brazing of pressureless-sintered SiC to stainless steel using Ag-28 wt% Cu alloy was studied. In SiC plate joined to stainless steel rod (6 mm in diameter) using an Ag-Cu alloy powder containing 1.5 wt% Ti, the bond strength increased with decreasing brazing temperature and holding time. When the increased size of stainless steel plate (10 x 10 x 4 mm), joining was unsuccessful by the method mentioned above and even with Ti insert-metal. However, simultaneous use of Ti and Mo as insert-metal gave a good bonding in the order SiC/Ti/Mo/stainless steel, because of relaxation of residual stress due to thermal expansion mismatch. The shear strength was 30 - 50 MPa. A thin layer, probably Ti 3 SiC 2 , was observed at the interface between SiC and brazing filler immediately after melting. But with increasing both temperature and time, Ti 5 Si 3 (C) and TiC x were formed if Ti was continuously provided from the brazing filler. Since the interface of Ti 3 SiC 2 and either Ti 5 Si 3 (C) or TiC x seemed to be brittle, the formation of Ti 5 Si 3 (C) and TiC x decreased the bond strength. At lower temperature and short time, a high bond strength is expected when Ti was inserted in contact with SiC. (author)

  5. Electroplating chromium on CVD SiC and SiCf-SiC advanced cladding via PyC compatibility coating

    Science.gov (United States)

    Ang, Caen; Kemery, Craig; Katoh, Yutai

    2018-05-01

    Electroplating Cr on SiC using a pyrolytic carbon (PyC) bond coat is demonstrated as an innovative concept for coating of advanced fuel cladding. The quantification of coating stress, SEM morphology, XRD phase analysis, and debonding test of the coating on CVD SiC and SiCf-SiC is shown. The residual tensile stress (by ASTM B975) of electroplated Cr is > 1 GPa prior to stress relaxation by microcracking. The stress can remove the PyC/Cr layer from SiC. Surface etching of ∼20 μm and roughening to Ra > 2 μm (by SEM observation) was necessary for successful adhesion. The debonding strength (by ASTM D4541) of the coating on SiC slightly improved from 3.6 ± 1.4 MPa to 5.9 ± 0.8 MPa after surface etching or machining. However, this improvement is limited due to the absence of an interphase, and integrated CVI processing may be required for further advancement.

  6. Preparation and oxidation protection of CVD SiC/a-BC/SiC coatings for 3D C/SiC composites

    International Nuclear Information System (INIS)

    Liu Yongsheng; Zhang Litong; Cheng Laifei; Yang Wenbin; Zhang Weihua; Xu Yongdong

    2009-01-01

    An amorphous boron carbide (a-BC) coating was prepared by LPCVD process from BCl 3 -CH 4 -H 2 -Ar system. XPS result showed that the boron concentration was 15.0 at.%, and carbon was 82.0 at.%. One third of boron was distributed to a bonding with carbon and 37.0 at.% was dissolved in graphite lattice. A multiple-layered structure of CVD SiC/a-BC/SiC was coated on 3D C/SiC composites. Oxidation tests were conducted at 700, 1000, and 1200 deg. C in 14 vol.% H 2 O/8 vol.% O 2 /78 vol.% Ar atmosphere up to 100 h. The 3D C/SiC composites with the modified coating system had a good oxidation resistance. This resulted in the high strength retained ratio of the composites even after the oxidation.

  7. Bonding temperature dependence of GaInAsP/InP laser diode grown on hydrophilically directly bonded InP/Si substrate

    Science.gov (United States)

    Aikawa, Masaki; Onuki, Yuya; Hayasaka, Natsuki; Nishiyama, Tetsuo; Kamada, Naoki; Han, Xu; Kallarasan Periyanayagam, Gandhi; Uchida, Kazuki; Sugiyama, Hirokazu; Shimomura, Kazuhiko

    2018-02-01

    The bonding-temperature-dependent lasing characteristics of 1.5 a µm GaInAsP laser diode (LD) grown on a directly bonded InP/Si substrate were successfully obtained. We have fabricated the InP/Si substrate using a direct hydrophilic wafer bonding technique at bonding temperatures of 350, 400, and 450 °C, and deposited GaInAsP/InP double heterostructure layers on this InP/Si substrate. The surface conditions, X-ray diffraction (XRD) analysis, photoluminescence (PL) spectra, and electrical characteristics after the growth were compared at these bonding temperatures. No significant differences were confirmed in X-ray diffraction analysis and PL spectra at these bonding temperatures. We realized the room-temperature lasing of the GaInAsP LD on the InP/Si substrate bonded at 350 and 400 °C. The threshold current densities were 4.65 kA/cm2 at 350 °C and 4.38 kA/cm2 at 400 °C. The electrical resistance was found to increase with annealing temperature.

  8. AES study of the reaction between a thin Fe-film and β-SiC (100) surface

    International Nuclear Information System (INIS)

    Mizokawa, Yusuke; Nakanishi, Shigemitsu; Miyase, Sunao

    1989-01-01

    The solid state reaction between thin Fe-films and β-SiC(100) in UHV has been studied using AES. Even at room temperature, the reaction between the thin Fe-film and SiC occurred and formed Fe-silicide and graphite with a minor product of Fe-carbide (Fe 3 C). The reaction proceeded with an increase of Fe-coverage to some extent. With annealing of 15 A-Fe-film/SiC below 540degC, the Fe-silicide formation was accelerated, but because the amount of available Fe was small, the dissolved carbon atoms were forced to form not the Fe-carbide but the graphite phase. Above 640degC, the Fe-silicide started to decompose and the carbon atoms diffused to the surface and formed surface graphite layers. With annealing at 1080degC, the free-Si segregats at the surface and formed Si-Si bonds, as well as the Si-C bonds consuming the surface graphite phase. (author)

  9. Electronic structures of β-SiC containing point defects studied by DX-Xα method

    International Nuclear Information System (INIS)

    Sawabe, Takashi; Yano, Toyohiko

    2008-01-01

    The DV-Xα method was used to calculate the bond order between atoms in cubic silicon carbide (β-SiC) with a point defect. Three types of β-SiC cluster models were used: pure cluster, vacancy cluster and interstitial cluster. The bond order was influenced by the kind to defects. The bonds between C interstitial and neighboring C atoms were composed of anti-bonding type interactions, while the bonds between Si interstitial and neighboring C and Si atoms were composed of bonding type interactions. The overlap population of each molecular orbital was examined to obtain detailed information of the chemical bonding. It appeared more difficult to recombine interstitial atoms in a cluster with a C atom vacancy than in a cluster with a Si atom vacancy, due to the stronger Si-Si bonds surrounding the C atom vacancy. The C interstitial atom had C2s and C2p anti-bonding interactions with high energy levels. The Si interstitial had minimal anti-bonding interactions. (author)

  10. Covalent bonds and their crucial effects on pseudogap formation in α-Al(Mn,Re)Si icosahedral quasicrystalline approximant

    International Nuclear Information System (INIS)

    Kirihara, K.; Nagata, T.; Kimura, K.; Kato, K.; Takata, M.; Nishibori, E.; Sakata, M.

    2003-01-01

    X-ray charge densities of Al-based icosahedral quasicrystalline approximant crystals α-AlReSi, α-AlMnSi, and Al 12 Re were observed by a combination of the maximum entropy method with the Rietveld method. We successfully obtained the clear images of interatomic covalent bonds between Al and transition metals (Mn, Re) and those in the Al (or Si) icosahedron in Mackay icosahedral clusters of both α-AlReSi and α-AlMnSi approximant crystals. The bonding nature of the three kinds of glue atom sites connecting Mackay icosahedral clusters was also clarified. This covalent bonding nature should strongly relate with the enhancement of the electron density-of-states pseudogap near the Fermi level. In addition, the interatomic covalent bonds of α-AlReSi are stronger than those of α-AlMnSi. This fact leads to the low effective carrier density of α-AlReSi in comparison with that of α-AlMnSi. Unlike the covalent bonding nature of an icosahedron in α-AlReSi and α-AlMnSi crystals, the Al icosahedron with an Re center atom exhibits no Al-Al interatomic covalent bonds in the Al 12 Re crystal. The tendency for metallic-covalent bonding conversion in the Al icosahedron, which is related to the atom site occupancy of the icosahedral cluster center, is also strongly supported

  11. Effect of Ti and Si interlayer materials on the joining of SiC ceramics

    Energy Technology Data Exchange (ETDEWEB)

    Jung, Yang Il; Park, Jung Hwan; Kim, Hyun Gil; Park, Dong Jun; Park, Jeong Yong; Kim, Weon Ju [LWR Fuel Technology Division, Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2016-08-15

    SiC-based ceramic composites are currently being considered for use in fuel cladding tubes in light-water reactors. The joining of SiC ceramics in a hermetic seal is required for the development of ceramic-based fuel cladding tubes. In this study, SiC monoliths were diffusion bonded using a Ti foil interlayer and additional Si powder. In the joining process, a very low uniaxial pressure of ∼0.1 MPa was applied, so the process is applicable for joining thin-walled long tubes. The joining strength depended strongly on the type of SiC material. Reaction-bonded SiC (RB-SiC) showed a higher joining strength than sintered SiC because the diffusion reaction of Si was promoted in the former. The joining strength of sintered SiC was increased by the addition of Si at the Ti interlayer to play the role of the free Si in RB-SiC. The maximum joint strength obtained under torsional stress was ∼100 MPa. The joint interface consisted of TiSi{sub 2}, Ti{sub 3}SiC{sub 2}, and SiC phases formed by a diffusion reaction of Ti and Si.

  12. (001) 3C SiC/Ni contact interface: In situ XPS observation of annealing induced Ni2Si formation and the resulting barrier height changes

    Science.gov (United States)

    Tengeler, Sven; Kaiser, Bernhard; Chaussende, Didier; Jaegermann, Wolfram

    2017-04-01

    The electronic states of the (001) 3C SiC/Ni interface prior and post annealing are investigated via an in situ XPS interface experiment, allowing direct observation of the induced band bending and the transformation from Schottky to ohmic behaviour for the first time. A single domain (001) 3C SiC sample was prepared via wet chemical etching. Nickel was deposited on the sample in multiple in situ deposition steps via RF sputtering, allowing observation of the 3C SiC/Ni interface formation. Over the course of the experiments, an upward band bending of 0.35 eV was observed, along with defect induced Fermi level pinning. This indicates a Schottky type contact behaviour with a barrier height of 0.41 eV. The subsequent annealing at 850 °C for 5 min resulted in the formation of a Ni2Si layer and a reversal of the band bending to 0.06 eV downward. Thus explaining the ohmic contact behaviour frequently reported for annealed n-type 3C SiC/Ni contacts.

  13. Interfacial microstructure of partial transient liquid phase bonded Si3N4-to-Inconel 718 joints

    International Nuclear Information System (INIS)

    Kim, Jae Joong; Park, Jin-Woo; Eagar, Thomas W.

    2003-01-01

    This work presents transmission electron microscopy (TEM) analysis of the interfacial microstructure in Si 3 N 4 -to-Inconel 718 joints with Ni interlayers produced by partial transient liquid phase bonding (PTLPB). Ti and Cu microfoils have been inserted between Si 3 N 4 and the Ni interlayer and joining has been performed at lower temperatures than previous PTLPBs of Si 3 N 4 with the same insert metals. The TEM work is focused on phase identification of the reaction layers between the Si 3 N 4 and the Ni interlayer. According to the TEM analysis, most of the Cu precipitates without reacting with Ti and Ni. Si diffused in the filler metal and thin reaction layer formed at the interface between Si 3 N 4 and the filler metal producing good bond-formation and hence, high interfacial strength. No interfacial fractures occurred after cooling from the bonding temperature of 900 deg. C, which supports the results observed in the TEM analysis. This work confirms that this joining process can produce a more heat resistant Si 3 N 4 -to-Inconel 718 joint than active brazing using Ag-Cu-Ti alloys

  14. Phase Stability and Thermal Conductivity of Composite Environmental Barrier Coatings on SiC/SiC Ceramic Matrix Composites

    Science.gov (United States)

    Benkel, Samantha; Zhu, Dongming

    2011-01-01

    Advanced environmental barrier coatings are being developed to protect SiC/SiC ceramic matrix composites in harsh combustion environments. The current coating development emphasis has been placed on the significantly improved cyclic durability and combustion environment stability in high-heat-flux and high velocity gas turbine engine environments. Environmental barrier coating systems based on hafnia (HfO2) and ytterbium silicate, HfO2-Si nano-composite bond coat systems have been processed and their stability and thermal conductivity behavior have been evaluated in simulated turbine environments. The incorporation of Silicon Carbide Nanotubes (SiCNT) into high stability (HfO2) and/or HfO2-silicon composite bond coats, along with ZrO2, HfO2 and rare earth silicate composite top coat systems, showed promise as excellent environmental barriers to protect the SiC/SiC ceramic matrix composites.

  15. Enhancement of sp3 hybridized C in amorphous carbon films by Ar ion bombardment and Si incorporation

    International Nuclear Information System (INIS)

    Jung, Hae-Suk; Park, Hyung-Ho; Mendieta, I.R.; Smith, D.A.

    2003-01-01

    We report an effective method of increasing the sp 3 hybridization fraction in sputtered amorphous carbon (a-C) film by the combination of Ar ion bombardment and Si incorporation. In the deposition of an a-C film, Ar ion bombardment by controlling the applied bias voltage plays a role in creating high stress in film and causes the local bonding configuration to change to a sp 3 hybridized bond. Simultaneously, the incorporated Si in an a-C network breaks the sp 2 hybridized bonded ring and promotes the formation of a sp 3 hybridized bond. This enhancement of the sp 3 hybridized bonding characteristic is maximized for an a-C film with 23 at. % of Si and 100-150 V of applied bias voltage. In this region, the increase of resistivity, optical band gap, and mechanical hardness of a-C is attributed to the reduction of the sp 2 hybridized bonded ring and increased fraction of the sp 3 hybridized bond. However, at a higher bias voltage above 150 V, the enhancement effect is reduced due to the resputtering and thermally activated reconversion of a sp 3 to a sp 2 hybridized bond

  16. Microstructure and properties of an Al-Ti-Cu-Si brazing alloy for SiC-metal joining

    Science.gov (United States)

    Dai, Chun-duo; Ma, Rui-na; Wang, Wei; Cao, Xiao-ming; Yu, Yan

    2017-05-01

    An Al-Ti-Cu-Si solid-liquid dual-phase alloy that exhibits good wettability and appropriate interfacial reaction with SiC at 500-600°C was designed for SiC-metal joining. The microstructure, phases, differential thermal curves, and high-temperature wetting behavior of the alloy were analyzed using scanning electron microscopy, X-ray diffraction analysis, differential scanning calorimetry, and the sessile drop method. The experimental results show that the 76.5Al-8.5Ti-5Cu-10Si alloy is mainly composed of Al-Al2Cu and Al-Si hypoeutectic low-melting-point microstructures (493-586°C) and the high-melting-point intermetallic compound AlTiSi (840°C). The contact angle, determined by high-temperature wetting experiments, is approximately 54°. Furthermore, the wetting interface is smooth and contains no obvious defects. Metallurgical bonding at the interface is attributable to the reaction between Al and Si in the alloy and ceramic, respectively. The formation of the brittle Al4C3 phase at the interface is suppressed by the addition of 10wt% Si to the alloy.

  17. Synthesis of SiC decorated carbonaceous nanorods and its hierarchical composites Si@SiC@C for high-performance lithium ion batteries

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Chundong [School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074 (China); Center of Super-Diamond and Advanced Films (COSDAF), Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR (China); Li, Yi, E-mail: liyi@suda.edu.cn [College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou (China); Center of Super-Diamond and Advanced Films (COSDAF), Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR (China); Ostrikov, Kostya [School of Chemistry, Physics and Mechanical Engineering, Queensland University of Technology, Brisbane, Queensland 4000 (Australia); Plasma Nanoscience, Industrial Innovation Program, CSIRO Manufacturing Flagship, Lindfield, New South Wales 2070 (Australia); Yang, Yonggang [College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou (China); Zhang, Wenjun, E-mail: apwjzh@cityu.edu.hk [Center of Super-Diamond and Advanced Films (COSDAF), Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR (China)

    2015-10-15

    SiC- based nanomaterials possess superior electric, thermal and mechanical properties. However, due to the tricky synthesis process, which needs to be carried out under high temperature with multi-step reaction procedures, the further application is dramatically limited. Herein, a simple as well as a controllable approach is proposed for synthesis of SiC- based nanostructures under low temperature. Phenyl-bridged polysilsesquioxane was chosen as the starting material to react with magnesium at 650 °C, following which SiC@C nanocomposites were finally obtained, and it maintains the original bent rod-like architecture of polysilsesquioxanes. The possible formation process for the nanocomposites can proposed as well. The electrochemical behaviour of nanocomposites was accessed, verifying that the synthesized SiC@C nanocomposites deliver good electrochemical performance. Moreover, SiC@C also shows to be a promising scaffold in supporting Si thin film electrode in achieving stable cycling performance in lithium ion batteries. - Highlights: • SiC@C bent nanorods were synthesized with a magnesium reaction approach. • Carbon nanorod spines studded with ultrafine β-SiC nanocrystallines was realized. • The synthesized SiC@C keeps the original rod-like structure of polysilsesquioxanes. • The possible formation process for the nanocomposites was analysed and proposed. • Si@SiC@C nanocomposites reveal good electrochemical performance in LIBs.

  18. Sequential plasma activation methods for hydrophilic direct bonding at sub-200 °C

    Science.gov (United States)

    He, Ran; Yamauchi, Akira; Suga, Tadatomo

    2018-02-01

    We present our newly developed sequential plasma activation methods for hydrophilic direct bonding of silica glasses and thermally grown SiO2 films. N2 plasma was employed to introduce a metastable oxynitride layer on wafer surfaces for the improvement of bond energy. By using either O2-plasma/N2-plasma/N-radical or N2-plasma/N-radical sequential activation, the quartz-quartz bond energy was increased from 2.7 J/m2 to close to the quartz bulk fracture energy that was estimated to be around 9.0 J/m2 after post-bonding annealing at 200 °C. The silicon bulklike bond energy between thermal SiO2 films was also obtained. We suggest that the improvement is attributable to surface modification such as N-related defect formation and asperity softening by the N2 plasma surface treatment.

  19. C-H and C-C activation of n -butane with zirconium hydrides supported on SBA15 containing N-donor ligands: [(≡SiNH-)(≡SiX-)ZrH2], [(≡SiNH-)(≡SiX-)2ZrH], and[(≡SiN=)(≡SiX-)ZrH] (X = -NH-, -O-). A DFT study

    KAUST Repository

    Pasha, Farhan Ahmad; Bendjeriou-Sedjerari, Anissa; Huang, Kuo-Wei; Basset, Jean-Marie

    2014-01-01

    : [(≡SiNH-)(≡SiO-)ZrH2] (A), [(≡SiNH-)2ZrH2] (B), [(≡SiNH-)(≡SiO-) 2ZrH] (C), [(≡SiNH-)2(≡SiO-)ZrH] (D), [(≡SiN=)(≡Si-O-)ZrH] (E), and [(≡SiN=)(≡SiNH-)ZrH] (F). The roles of these hydrides have been investigated in C-H/C-C bond activation and cleavage

  20. Ab initio study of 3C-SiC/M (M = Ti or Al) nano-hetero interfaces

    International Nuclear Information System (INIS)

    Tanaka, Shingo; Kohyama, Masanori

    2003-01-01

    Ab initio pseudopotential calculation of 3C-SiC(1 1 1)/Al nano-hetero interfaces have been performed and interface atom species dependence (IASD) and interface orientation dependence (IOD) of nano-hetero interfaces between 3C-SiC ((1 1 1) or (0 0 1) orientation) and metal (Ti or Al) have been studied systematically. Stable atomic configurations of the 3C-SiC(1 1 1)/Al interfaces are quite different from those of the 3C-SiC(1 1 1)/Ti interfaces. Two terminated, Si-terminated (Si-TERM) and C-terminated (C-TERM), 3C-SiC(1 1 1)/Al interfaces have covalent bonding nature. In 3C-SiC/M (M = Ti or Al) nano-hetero interfaces, the C-terminated interface has relative strong, covalent and ionic C-Ti or C-Al bonds as TiC or SiC while the Si-terminated interface has various type of bonding nature, relative weak Si-Ti or Si-Al bonds from metallic character at the (0 0 1) interface to covalent character at the (1 1 1) interface. Adhesive energy (AE) shows strong IASD and IOD. The AE of the C-terminated interface is larger than that of the Si-terminated one. In the C-terminated interface, the AE of the (1 1 1) interface is smaller than that of the (0 0 1) one while in the Si-terminated interface there exists opposite interrelation. Schottky barrier height (SBH) also shows strong IASD and IOD. The SBH of the C-terminated interface is smaller than that of the Si-terminated one. The C-terminated SiC/Al interfaces have extremely small SBHs. In comparison with some experimental SBH, the present result is reliable as the difference of SBH between the two terminated interfaces and qualitative properties

  1. Formation of metallic Si and SiC nanoparticles from SiO2 particles by plasma-induced cathodic discharge electrolysis in chloride melt

    International Nuclear Information System (INIS)

    Tokushige, M.; Tsujimura, H.; Nishikiori, T.; Ito, Y.

    2013-01-01

    Silicon nanoparticles are formed from SiO 2 particles by conducting plasma-induced cathodic discharge electrolysis. In a LiCl–KCl melt in which SiO 2 particles were suspended at 450 °C, we obtained Si nanoparticles with diameters around 20 nm. During the electrolysis period, SiO 2 particles are directly reduced by discharge electrons on the surface of the melt just under the discharge, and the deposited Si atom clusters form Si nanoparticles, which leave the surface of the original SiO 2 particle due to free spaces caused by a molar volume difference between SiO 2 and Si. We also found that SiC nanoparticles can be obtained using carbon anode. Based on Faraday's law, the current efficiency for the formation of Si nanoparticles is 70%

  2. C and Si delta doping in Ge by CH_3SiH_3 using reduced pressure chemical vapor deposition

    International Nuclear Information System (INIS)

    Yamamoto, Yuji; Ueno, Naofumi; Sakuraba, Masao; Murota, Junichi; Mai, Andreas; Tillack, Bernd

    2016-01-01

    C and Si delta doping in Ge are investigated using a reduced pressure chemical vapor deposition system to establish atomic-order controlled processes. CH_3SiH_3 is exposed at 250 °C to 500 °C to a Ge on Si (100) substrate using H_2 or N_2 carrier gas followed by a Ge cap layer deposition. At 350 °C, C and Si are uniformly adsorbed on the Ge surface and the incorporated C and Si form steep delta profiles below detection limit of SIMS measurement. By using N_2 as carrier gas, the incorporated C and Si doses in Ge are saturated at one mono-layer below 350 °C. At this temperature range, the incorporated C and Si doses are nearly the same, indicating CH_3SiH_3 is adsorbed on the Ge surface without decomposing the C−Si bond. On the other hand, by using H_2 as carrier gas, lower incorporated C is observed in comparison to Si. CH_3SiH_3 injected with H_2 carrier gas is adsorbed on Ge without decomposing the C−Si bond and the adsorbed C is reduced by dissociation of the C−Si bond during temperature ramp up to 550 °C. The adsorbed C is maintained on the Ge surface in N_2 at 550 °C. - Highlights: • C and Si delta doping in Ge is investigated using RPCVD system by CH_3SiH_3 exposure. • Atomically flat C and Si delta layers are fabricated at 350 °C. • Incorporated C and Si doses are saturated at one mono-layer below 350 °C. • CH_3SiH_3 adsorption occurred without decomposing C−Si bond. • Adsorbed C is desorbed due to dissociation by hydrogen during postannealing at 550 °C.

  3. Si-O-Si bond-angle distribution in vitreous silica from first-principles 29Si NMR analysis

    International Nuclear Information System (INIS)

    Mauri, Francesco; Pasquarello, Alfredo; Pfrommer, Bernd G.; Yoon, Young-Gui; Louie, Steven G.

    2000-01-01

    The correlation between 29 Si chemical shifts and Si-O-Si bond angles in SiO 2 is determined within density-functional theory for the full range of angles present in vitreous silica. This relation closely reproduces measured shifts of crystalline polymorphs. The knowledge of the correlation allows us to reliably extract from the experimental NMR spectrum the mean (151 degree sign ) and the standard deviation (11 degree sign ) of the Si-O-Si angular distribution of vitreous silica. In particular, we show that the Mozzi-Warren Si-O-Si angular distribution is not consistent with the NMR data. This analysis illustrates the potential of our approach for structural determinations of silicate glasses. (c) 2000 The American Physical Society

  4. Chemoselective Radical Dehalogenation and C-C Bond Formation on Aryl Halide Substrates Using Organic Photoredox Catalysts.

    Science.gov (United States)

    Poelma, Saemi O; Burnett, G Leslie; Discekici, Emre H; Mattson, Kaila M; Treat, Nicolas J; Luo, Yingdong; Hudson, Zachary M; Shankel, Shelby L; Clark, Paul G; Kramer, John W; Hawker, Craig J; Read de Alaniz, Javier

    2016-08-19

    Despite the number of methods available for dehalogenation and carbon-carbon bond formation using aryl halides, strategies that provide chemoselectivity for systems bearing multiple carbon-halogen bonds are still needed. Herein, we report the ability to tune the reduction potential of metal-free phenothiazine-based photoredox catalysts and demonstrate the application of these catalysts for chemoselective carbon-halogen bond activation to achieve C-C cross-coupling reactions as well as reductive dehalogenations. This procedure works both for conjugated polyhalides as well as unconjugated substrates. We further illustrate the usefulness of this protocol by intramolecular cyclization of a pyrrole substrate, an advanced building block for a family of natural products known to exhibit biological activity.

  5. First-principles calculations of Ti{sub 3}SiC{sub 2} and Ti{sub 3}AlC{sub 2} with hydrogen interstitial

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Canhui [Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics, Mianyang, 621900 (China); Zhang, Haibin, E-mail: hbzhang@caep.cn [Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics, Mianyang, 621900 (China); Hu, Shuanglin; Zhou, Xiaosong; Peng, Shuming [Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics, Mianyang, 621900 (China); Xiao, Haiyan [School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu, 610054 (China); Zhang, Guojun [State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, Research Institute of Functional Materials, Donghua University, Shanghai, 201620 (China)

    2017-05-15

    In this paper, the effects of hydrogen interstitial defect on the structural stability of two kinds of MAX materials (Ti{sub 3}SiC{sub 2} and Ti{sub 3}AlC{sub 2}) were investigated by first-principles calculations. The results indicated that the hydrogen interstitial energetically prefers to reside at the 2Ti3Si site for Ti{sub 3}SiC{sub 2} and 3TiAl site for Ti{sub 3}AlC{sub 2}, respectively, and the latter has much lower formation energy. Both of these MAX phases are slightly hardened and the elastic anisotropy is reduced appreciably after the introduction of hydrogen interstitial. The hydrogen interstitial in Ti{sub 3}SiC{sub 2} and Ti{sub 3}AlC{sub 2} leads to an electronic localization effect on the Si/Al atom and the effect is more remarkable in Ti{sub 3}AlC{sub 2}. The interlayer bonding strength of Ti{sub 3}AlC{sub 2} is more weakened by hydrogen interstitials than that of Ti{sub 3}SiC{sub 2}. As a result, the interatomic bonding between Si/Al and Ti atom layers is deteriorated and their structural stabilities degrade subsequently.

  6. Pore Formation Process of Porous Ti3SiC2 Fabricated by Reactive Sintering

    Directory of Open Access Journals (Sweden)

    Huibin Zhang

    2017-02-01

    Full Text Available Porous Ti3SiC2 was fabricated with high purity, 99.4 vol %, through reactive sintering of titanium hydride (TiH2, silicon (Si and graphite (C elemental powders. The reaction procedures and the pore structure evolution during the sintering process were systematically studied by X-ray diffraction (XRD and scanning electron microscope (SEM. Our results show that the formation of Ti3SiC2 from TiH2/Si/C powders experienced the following steps: firstly, TiH2 decomposed into Ti; secondly, TiC and Ti5Si3 intermediate phases were generated; finally, Ti3SiC2 was produced through the reaction of TiC, Ti5Si3 and Si. The pores formed in the synthesis procedure of porous Ti3SiC2 ceramics are derived from the following aspects: interstitial pores left during the pressing procedure; pores formed because of the TiH2 decomposition; pores formed through the reactions between Ti and Si and Ti and C powders; and the pores produced accompanying the final phase synthesized during the high temperature sintering process.

  7. Metallization of ion beam synthesized Si/3C-SiC/Si layer systems by high-dose implantation of transition metal ions

    International Nuclear Information System (INIS)

    Lindner, J.K.N.; Wenzel, S.; Stritzker, B.

    2001-01-01

    The formation of metal silicide layers contacting an ion beam synthesized buried 3C-SiC layer in silicon by means of high-dose titanium and molybdenum implantations is reported. Two different strategies to form such contact layers are explored. The titanium implantation aims to convert the Si top layer of an epitaxial Si/SiC/Si layer sequence into TiSi 2 , while Mo implantations were performed directly into the SiC layer after selectively etching off all capping layers. Textured and high-temperature stable C54-TiSi 2 layers with small additions of more metal-rich silicides are obtained in the case of the Ti implantations. Mo implantations result in the formation of the high-temperature phase β-MoSi 2 , which also grows textured on the substrate. The formation of cavities in the silicon substrate at the lower SiC/Si interface due to the Si consumption by the growing silicide phase is observed in both cases. It probably constitutes a problem, occurring whenever thin SiC films on silicon have to be contacted by silicide forming metals independent of the deposition technique used. It is shown that this problem can be solved with ion beam synthesized contact layers by proper adjustment of the metal ion dose

  8. Formation of Me–O–Si covalent bonds at the interface between polysilazane and stainless steel

    Energy Technology Data Exchange (ETDEWEB)

    Amouzou, Dodji, E-mail: adodji@gmail.com [Research Centre in Physics of Matter and Radiation (PMR), University of Namur, Rue de Bruxelles 61, 5000 Namur (Belgium); Fourdrinier, Lionel; Maseri, Fabrizio [CRM-Group, Boulevard de Colonster, B 57, 4000 Liège (Belgium); Sporken, Robert [Research Centre in Physics of Matter and Radiation (PMR), University of Namur, Rue de Bruxelles 61, 5000 Namur (Belgium)

    2014-11-30

    Highlights: • Natural metal-oxides, hydroxides are detected on the top surface of steel substrates we tested. • Polysilazane reacts with hydroxide functional groups on steel substrates to form Cr–O–Si and Fe–O–Si covalent bonds. • Covalent bonding between steel and polysilazane at the interface was probed using spectroscopic techniques. - Abstract: In earlier works, we demonstrated the potential of polysilazane (PSZ) coatings for a use as insulating layers in Cu(In,Ga)Se{sub 2} (CIGS) solar cells prepared on steels substrates and showed a good adhesion between PSZ coatings and both AISI316 and AISI430 steels. In the present paper, spectroscopic techniques are used to elucidate the reason of such adhesion. X-ray Photoelectron Spectroscopy (XPS) was used to investigate surfaces for the two steel substrates and showed the presence of metal oxides and metal hydroxides at the top surface. XPS has been also used to probe interfaces between substrates and PSZ, and metallosiloxane (Me–O–Si) covalent bonds have been detected. These results were confirmed by Infra-Red Reflection Absorption Spectroscopy (IRRAS) analyses since vibrations related to Cr–O–Si and Fe–O–Si compounds were detected. Thus, the good adhesion between steel substrates and PSZ coatings was explained by covalent bonding through chemical reactions between PSZ precursors and hydroxide functional groups present on top surface of the two types of steel. Based on these results, an adhesion mechanism between steel substrates and PSZ coatings is proposed.

  9. Mission-profile-based stress analysis of bond-wires in SiC power modules

    DEFF Research Database (Denmark)

    Bahman, Amir Sajjad; Iannuzzo, Francesco; Blaabjerg, Frede

    2016-01-01

    This paper proposes a novel mission-profile-based reliability analysis approach for stress on bond wires in Silicon Carbide (SiC) MOSFET power modules using statistics and thermo-mechanical FEM analysis. In the proposed approach, both the operational and environmental thermal stresses are taken...... into account. The approach uses a two-dimension statistical analysis of the operating conditions in a real one-year mission profile sampled at time frames 5 minutes long. For every statistical bin corresponding to a given operating condition, the junction temperature evolution is estimated by a thermal network...... and the mechanical stress on bond wires is consequently extracted by finite-element simulations. In the final step, the considered mission profile is translated in a stress sequence to be used for Rainflow counting calculation and lifetime estimation....

  10. Graphene synthesis on SiC: Reduced graphitization temperature by C-cluster and Ar-ion implantation

    International Nuclear Information System (INIS)

    Zhang, R.; Li, H.; Zhang, Z.D.; Wang, Z.S.; Zhou, S.Y.; Wang, Z.; Li, T.C.; Liu, J.R.; Fu, D.J.

    2015-01-01

    Thermal decomposition of SiC is a promising method for high quality production of wafer-scale graphene layers, when the high decomposition temperature of SiC is substantially reduced. The high decomposition temperature of SiC around 1400 °C is a technical obstacle. In this work, we report on graphene synthesis on 6H–SiC with reduced graphitization temperature via ion implantation. When energetic Ar, C 1 and C 6 -cluster ions implanted into 6H–SiC substrates, some of the Si–C bonds have been broken due to the electronic and nuclear collisions. Owing to the radiation damage induced bond breaking and the implanted C atoms as an additional C source the graphitization temperature was reduced by up to 200 °C

  11. Atomic state and characterization of nitrogen at the SiC/SiO2 interface

    International Nuclear Information System (INIS)

    Xu, Y.; Garfunkel, E. L.; Zhu, X.; Lee, H. D.; Xu, C.; Shubeita, S. M.; Gustafsson, T.; Ahyi, A. C.; Sharma, Y.; Williams, J. R.; Lu, W.; Ceesay, S.; Tuttle, B. R.; Pantelides, S. T.; Wan, A.; Feldman, L. C.

    2014-01-01

    We report on the concentration, chemical bonding, and etching behavior of N at the SiC(0001)/SiO 2 interface using photoemission, ion scattering, and computational modeling. For standard NO processing of a SiC MOSFET, a sub-monolayer of nitrogen is found in a thin inter-layer between the substrate and the gate oxide (SiO 2 ). Photoemission shows one main nitrogen related core-level peak with two broad, higher energy satellites. Comparison to theory indicates that the main peak is assigned to nitrogen bound with three silicon neighbors, with second nearest neighbors including carbon, nitrogen, and oxygen atoms. Surprisingly, N remains at the surface after the oxide was completely etched by a buffered HF solution. This is in striking contrast to the behavior of Si(100) undergoing the same etching process. We conclude that N is bound directly to the substrate SiC, or incorporated within the first layers of SiC, as opposed to bonding within the oxide network. These observations provide insights into the chemistry and function of N as an interface passivating additive in SiC MOSFETs

  12. Bonding of Si wafers by surface activation method for the development of high efficiency high counting rate radiation detectors

    International Nuclear Information System (INIS)

    Kanno, Ikuo; Yamashita, Makoto; Onabe, Hideaki

    2006-01-01

    Si wafers with two different resistivities ranging over two orders of magnitude were bonded by the surface activation method. The resistivities of bonded Si wafers were measured as a function of annealing temperature. Using calculations based on a model, the interface resistivities of bonded Si wafers were estimated as a function of the measured resistivities of bonded Si wafers. With thermal treatment from 500degC to 900degC, all interfaces showed high resistivity, with behavior that was close to that of an insulator. Annealing at 1000degC decreased the interface resistivity and showed close to ideal bonding after thermal treatment at 1100degC. (author)

  13. Electronic Structures and Bonding Properties of Ti2AlC and Ti3AlC2

    Institute of Scientific and Technical Information of China (English)

    MIN Xinmin; REN Yi

    2007-01-01

    The relation among electronic structure, chemical bond and property of Ti2AlC, Ti3AlC2 and doping Si into Ti2AlC was studied by density function and the discrete variation (DFT-DVM) method. After adding Si into Ti2AlC, the interaction between Si and Ti is weaker than that between Al and Ti, and the strengths of ionic and covalent bonds decrease both. The ionic and covalent bonds in Ti3AlC2, especially in Ti-Al, are stronger than those in Ti2AlC. Therefore, in synthesis of Ti2AlC, the addition of Si enhances the Ti3AlC2 content instead of Ti2AlC. The density of state (DOS) shows that there is mixed conductor characteristic in Ti2AlC and Ti3AlC2. The DOS of Ti3AlC2 is much like that of Ti2AlC. Ti2SixAl1-x C has more obvious tendency to form a semiconductor than Ti2AlC, which is seen from the obvious difference of partial DOS between Si and Al3p.

  14. Interface and interaction of graphene layers on SiC(0001[combining macron]) covered with TiC(111) intercalation.

    Science.gov (United States)

    Wang, Lu; Wang, Qiang; Huang, Jianmei; Li, Wei-Qi; Chen, Guang-Hui; Yang, Yanhui

    2017-10-11

    It is important to understand the interface and interaction between the graphene layer, titanium carbide [TiC(111)] interlayer, and silicon carbide [SiC(0001[combining macron])] substrates in epitaxial growth of graphene on silicon carbide (SiC) substrates. In this study, the fully relaxed interfaces which consist of up to three layers of TiC(111) coatings on the SiC(0001[combining macron]) as well as the graphene layers interactions with these TiC(111)/SiC(0001[combining macron]) were systematically studied using the density functional theory-D2 (DFT-D2) method. The results showed that the two layers of TiC(111) coating with the C/C-terminated interfaces were thermodynamically more favorable than one or three layers of TiC(111) on the SiC(0001[combining macron]). Furthermore, the bonding of the Ti-hollow-site stacked interfaces would be a stronger link than that of the Ti-Fcc-site stacked interfaces. However, the formation of the C/Ti/C and Ti/C interfaces implied that the first upper carbon layer can be formed on TiC(111)/SiC(0001[combining macron]) using the decomposition of the weaker Ti-C and C-Si interfacial bonds. When growing graphene layers on these TiC(111)/SiC(0001[combining macron]) substrates, the results showed that the interaction energy depended not only on the thickness of the TiC(111) interlayer, but also on the number of graphene layers. Bilayer graphene on the two layer thick TiC(111)/SiC(0001[combining macron]) was thermodynamically more favorable than a monolayer or trilayer graphene on these TiC(111)/SiC(0001[combining macron]) substrates. The adsorption energies of the bottom graphene layers with the TiC(111)/SiC(0001[combining macron]) substrates increased with the decrease of the interface vertical distance. The interaction energies between the bottom, second and third layers of graphene on the TiC(111)/SiC(0001[combining macron]) were significantly higher than that of the freestanding graphene layers. All of these findings provided

  15. Thermal effects on the mechanical properties of SiC fibre reinforced reaction-bonded silicon nitride matrix composites

    Science.gov (United States)

    Bhatt, R. T.; Phillips, R. E.

    1990-01-01

    The elevated temperature four-point flexural strength and the room temperature tensile and flexural strength properties after thermal shock were measured for ceramic composites consisting of 30 vol pct uniaxially aligned 142 micron diameter SiC fibers in a reaction bonded Si3N4 matrix. The elevated temperature strengths were measured after 15 min of exposure in air at temperatures to 1400 C. Thermal shock treatment was accomplished by heating the composite in air for 15 min at temperatures to 1200 C and then quenching in water at 25 C. The results indicate no significant loss in strength properties either at temperature or after thermal shock when compared with the strength data for composites in the as-fabricated condition.

  16. Reductive Elimination Leading to C-C Bond Formation in Gold(III) Complexes: A Mechanistic and Computational Study.

    Science.gov (United States)

    Rocchigiani, Luca; Fernandez-Cestau, Julio; Budzelaar, Peter H M; Bochmann, Manfred

    2018-06-21

    The factors affecting the rates of reductive C-C cross-coupling reactions in gold(III) aryls were studied by using complexes that allow easy access to a series of electronically modified aryl ligands, as well as to gold methyl and vinyl complexes, by using the pincer compounds [(C^N^C)AuR] (R=C 6 F 5 , CH=CMe 2 , Me and p-C 6 H 4 X, where X=OMe, F, H, tBu, Cl, CF 3 , or NO 2 ) as starting materials (C^N^C=2,6-(4'-tBuC 6 H 3 ) 2 pyridine dianion). Protodeauration followed by addition of one equivalent SMe 2 leads to the quantitative generation of the thioether complexes [(C^N-CH)AuR(SMe 2 )] + . Upon addition of a second SMe 2 pyridine is displaced, which triggers the reductive aryl-R elimination. The rates for these cross-couplings increase in the sequence k(vinyl)>k(aryl)≫k(C 6 F 5 )>k(Me). Vinyl-aryl coupling is particularly fast, 1.15×10 -3  L mol -1  s -1 at 221 K, whereas both C 6 F 5 and Me couplings encountered higher barriers for the C-C bond forming step. The use of P(p-tol) 3 in place of SMe 2 greatly accelerates the C-C couplings. Computational modelling shows that in the C^N-bonded compounds displacement of N by a donor L is required before the aryl ligands can adopt a conformation suitable for C-C bond formation, so that elimination takes place from a four-coordinate intermediate. The C-C bond formation is the rate-limiting step. In the non-chelating case, reductive C(sp 2 )-C(sp 2 ) elimination from three-coordinate ions [(Ar 1 )(Ar 2 )AuL] + is almost barrier-free, particularly if L=phosphine. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  17. Pressure-assisted reaction bonding between W and Si80Ge20 alloy with Ni as the interlayer

    International Nuclear Information System (INIS)

    Xu, Y.; Laabs, F.C.; Beaudry, B.J.; Gschneidner, K.A. Jr.

    1991-01-01

    The conditions and reaction mechanism of W/Ni/Si 80 Ge 20 hot-press bonding have been studied. It was found that a Ni/Si 80 Ge 20 bond can be formed using low pressure, 19.6 MPa, in the temperature range between 780 and 900 degree C in a short time. The kinetics follows a parabolic pattern, suggesting it is a diffusion-controlled process. The activation energy is 2.7 eV and the parabolic rate constant is given by K P = 4.0 x 10 14 exp(-3.2x10 4 /T) (μm 2 /min). The bonding interface has a multilayered structure. A phenomenological mechanism of the bonding formation has been proposed based on scanning electron microscopy observations and energy dispersive spectroscopy. The cracking problem due to thermal stress is discussed based on Oxx's equation. It was found that bonds free from cracks in the Si 80 Ge 20 alloy are formed when the Ni consumption (as measured by the thickness of the nickel layer) is sufficiently small ( 4 . As an interlayer, nickel can join the tungsten sheet and the Si 80 Ge 20 together. It has been also demonstrated that a thin nickel layer formed by vapor deposition on a tungsten sheet may be used as the interlayer in place of nickel sheet

  18. MAX Phase Modified SiC Composites for Ceramic-Metal Hybrid Cladding Tubes

    International Nuclear Information System (INIS)

    Jung, Yang-Il; Kim, Sun-Han; Park, Dong-Jun; Park, Jeong-Hwan; Park, Jeong-Yong; Kim, Hyun-Gil; Koo, Yang-Hyun

    2015-01-01

    A metal-ceramic hybrid cladding consists of an inner zirconium tube, and an outer SiC fiber-matrix SiC ceramic composite with surface coating as shown in Fig. 1 (left-hand side). The inner zirconium allows the matrix to remain fully sealed even if the ceramic matrix cracks through. The outer SiC composite can increase the safety margin by taking the merits of the SiC itself. In addition, the outermost layer prevents the dissolution of SiC during normal operation. On the other hand, a ceramic-metal hybrid cladding consists of an outer zirconium tube, and an inner SiC ceramic composite as shown in Fig. 1 (right-hand side). The outer zirconium protects the fuel rod from a corrosion during reactor operation, as in the present fuel claddings. The inner SiC composite, additionally, is designed to resist the severe oxidation under a postulated accident condition of a high-temperature steam environment. Reaction-bonded SiC was fabricated by modifying the matrix as the MAX phase. The formation of Ti 3 SiC 2 was investigated depending on the compositions of the preform and melt. In most cases, TiSi 2 was the preferential phase because of its lowest melting point in the Ti-Si-C system. The evidence of Ti 3 SiC 2 was the connection with the pressurizing

  19. An in situ XPS study of growth of ITO on amorphous hydrogenated Si: Initial stages of heterojunction formation upon processing of ITO/a-Si:H based solar cell structures

    Energy Technology Data Exchange (ETDEWEB)

    Diplas, Spyros; Thoegersen, Annett; Ulyashin, Alexander [SINTEF Materials and Chemistry, Oslo (Norway); Romanyuk, Andriy [University of Basel, Basel (Switzerland)

    2015-01-01

    In this work we studied the interface growth upon deposition of indium-tin oxide (ITO) on amorphous hydrogenated Si (a-Si:H)/crystalline Si (c-Si) structures. The analysis methods used were X-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS) in combination with in situ film growth with magnetron sputtering. The analysis was complemented with transmission electron microscopy (TEM) of the deposited films. The sputtering equipment was attached to the XPS spectrometer and hence early stage film growth was observed without breaking the vacuum. It was shown that during early deposition stages ITO is reduced by a-Si:H. The reduction is accompanied with formation of metallic In and Sn at the interface. Formation of Sn is more enhanced on a-Si substrates whilst formation of In is more dominant on c-Si substrates. The reduction effect is less intense for amorphous hydrogenated Si as compared to crystalline Si and this is attributed to stronger presence of dangling bonds in the latter than the former. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  20. Inhibitive formation of nanocavities by introduction of Si atoms in Ge nanocrystals produced by ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Cai, R. S.; Shang, L.; Liu, X. H.; Zhang, Y. J. [The Cultivation Base for State Key Laboratory, Qingdao University, No. 308 Ningxia Road, Qingdao 266071 (China); Wang, Y. Q., E-mail: yqwang@qdu.edu.cn, E-mail: barba@emt.inrs.ca [The Cultivation Base for State Key Laboratory, Qingdao University, No. 308 Ningxia Road, Qingdao 266071 (China); College of Physics Science, Qingdao University, No. 308 Ningxia Road, Qingdao 266071 (China); Ross, G. G.; Barba, D., E-mail: yqwang@qdu.edu.cn, E-mail: barba@emt.inrs.ca [INRS-Énergie, Matériaux et Télécommunications, 1650 boulevard Lionel-Boulet, Varennes Québec J3X 1S2 (Canada)

    2014-05-28

    Germanium nanocrystals (Ge-nc) were successfully synthesized by co-implantation of Si and Ge ions into a SiO{sub 2} film thermally grown on (100) Si substrate and fused silica (pure SiO{sub 2}), respectively, followed by subsequent annealing at 1150 °C for 1 h. Transmission electron microscopy (TEM) examinations show that nanocavities only exist in the fused silica sample but not in the SiO{sub 2} film on a Si substrate. From the analysis of the high-resolution TEM images and electron energy-loss spectroscopy spectra, it is revealed that the absence of nanocavities in the SiO{sub 2} film/Si substrate is attributed to the presence of Si atoms inside the formed Ge-nc. Because the energy of Si-Ge bonds (301 kJ·mol{sup −1}) are greater than that of Ge-Ge bonds (264 kJ·mol{sup −1}), the introduction of the Si-Ge bonds inside the Ge-nc can inhibit the diffusion of Ge from the Ge-nc during the annealing process. However, for the fused silica sample, no crystalline Si-Ge bonds are detected within the Ge-nc, where strong Ge outdiffusion effects produce a great number of nanocavities. Our results can shed light on the formation mechanism of nanocavities and provide a good way to avoid nanocavities during the process of ion implantation.

  1. Surface Reconstruction-Induced Coincidence Lattice Formation Between Two-Dimensionally Bonded Materials and a Three-Dimensionally Bonded Substrate

    NARCIS (Netherlands)

    Boschker, Jos E.; Momand, Jamo; Bragaglia, Valeria; Wang, Ruining; Perumal, Karthick; Giussani, Alessandro; Kooi, Bart J.; Riechert, Henning; Calarco, Raffaella

    Sb2Te3 films are used for studying the epitaxial registry between two-dimensionally bonded (2D) materials and three-dimensional bonded (3D) substrates. In contrast to the growth of 3D materials, it is found that the formation of coincidence lattices between Sb2Te3 and Si(111) depends on the geometry

  2. An Erbium-Based Bifuctional Heterogeneous Catalyst: A Cooperative Route Towards C-C Bond Formation

    Directory of Open Access Journals (Sweden)

    Manuela Oliverio

    2014-07-01

    Full Text Available Heterogeneous bifuctional catalysts are multifunctional synthetic catalysts enabling efficient organic transformations by exploiting two opposite functionalities without mutual destruction. In this paper we report the first Er(III-based metallorganic heterogeneous catalyst, synthesized by post-calcination MW-assisted grafting and modification of the natural aminoacid L-cysteine. The natural acid–base distance between sites was maintained to assure the cooperation. The applicability of this new bifunctional heterogeneous catalyst to C-C bond formation and the supposed mechanisms of action are discussed as well.

  3. Pressure bonding molybdenum alloy (TZM) to reaction-bonded silicon nitride

    International Nuclear Information System (INIS)

    Huffsmith, S.A.; Landingham, R.L.

    1978-01-01

    Topping cycles could boost the energy efficiencies of a variety of systems by using what is now waste heat. One such topping cycle uses a ceramic helical expander and would require that a reaction-bonded silicon nitride (RBSN) rotor be bonded to a shaft of TZM (Mo-0.5 wt % Ti-0.08 wt % Zr). Coupon studies show that TZM can be bonded to RBSN at 1300 0 C and 69 MPa if there is an interlayer of MoSi 2 . A layer of finely ground (10 μm) MoSi 2 facilitates bond formation and provides a thicker bond interface. The hardness and grain structure of the TZM and RBSN were not affected by the temperature and pressure required to bond the coupons

  4. C and Si delta doping in Ge by CH{sub 3}SiH{sub 3} using reduced pressure chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Yamamoto, Yuji, E-mail: yamamoto@ihp-microelectronics.com [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Ueno, Naofumi; Sakuraba, Masao [Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1, Katahira, Aoba-Ku, Sendai 980-8577 (Japan); Murota, Junichi [Micro System Integration Center, Tohoku University, 519-1176, Aramaki aza Aoba, Aoba-ku, Sendai 980-0845 (Japan); Mai, Andreas [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Tillack, Bernd [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Technische Universität Berlin, HFT4, Einsteinufer 25, 10587 Berlin (Germany)

    2016-03-01

    C and Si delta doping in Ge are investigated using a reduced pressure chemical vapor deposition system to establish atomic-order controlled processes. CH{sub 3}SiH{sub 3} is exposed at 250 °C to 500 °C to a Ge on Si (100) substrate using H{sub 2} or N{sub 2} carrier gas followed by a Ge cap layer deposition. At 350 °C, C and Si are uniformly adsorbed on the Ge surface and the incorporated C and Si form steep delta profiles below detection limit of SIMS measurement. By using N{sub 2} as carrier gas, the incorporated C and Si doses in Ge are saturated at one mono-layer below 350 °C. At this temperature range, the incorporated C and Si doses are nearly the same, indicating CH{sub 3}SiH{sub 3} is adsorbed on the Ge surface without decomposing the C−Si bond. On the other hand, by using H{sub 2} as carrier gas, lower incorporated C is observed in comparison to Si. CH{sub 3}SiH{sub 3} injected with H{sub 2} carrier gas is adsorbed on Ge without decomposing the C−Si bond and the adsorbed C is reduced by dissociation of the C−Si bond during temperature ramp up to 550 °C. The adsorbed C is maintained on the Ge surface in N{sub 2} at 550 °C. - Highlights: • C and Si delta doping in Ge is investigated using RPCVD system by CH{sub 3}SiH{sub 3} exposure. • Atomically flat C and Si delta layers are fabricated at 350 °C. • Incorporated C and Si doses are saturated at one mono-layer below 350 °C. • CH{sub 3}SiH{sub 3} adsorption occurred without decomposing C−Si bond. • Adsorbed C is desorbed due to dissociation by hydrogen during postannealing at 550 °C.

  5. In-situ synchrotron x-ray study of MgB2 formation when doped by SiC

    Science.gov (United States)

    Abrahamsen, A. B.; Grivel, J.-C.; Andersen, N. H.; Herrmann, M.; Häßler, W.; Birajdar, B.; Eibl, O.; Saksl, K.

    2008-02-01

    We have studied the evolution of the reaction xMg + 2B + ySiC → zMg1-p(B1-qCq)2 + yMg2Si in samples of 1, 2, 5 and 10 wt% SiC doping. We found a coincident formation of MgB2 and Mg2Si, whereas the crystalline part of the SiC nano particles is not reacting at all. Evidence for incorporation of carbon into the MgB2 phase was established from the decrease of the a-axis lattice parameter upon increasing SiC doping. An estimate of the MgB2 lower limit grain size was found to decrease from L100 = 795 Å and L002 = 337 Å at 1 wt% SiC to L100 = 227 Å and L002= 60 Å at 10 wt% SiC. Thus superconductivity might be suppressed at 10 wt% SiC doping due to the grain size approaching the coherence length.

  6. Formation of oxide-trapped charges in 6H-SiC MOS structures

    Energy Technology Data Exchange (ETDEWEB)

    Yoshikawa, Masahito; Ohshima, Takeshi; Itoh, Hisayoshi; Nashiyama, Isamu [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment; Okumura, Hajime; Yoshida, Sadafumi

    1997-03-01

    The silicon and the carbon faces of hexagonal silicon carbide (6H-SiC) substrates were oxidized pyrogenically at 1100degC, and the metal-oxide-semiconductor structures were formed on these faces. The MOS capacitors developed using the silicon and the carbon faces were irradiated with {sup 60}Co gamma-rays under argon atmosphere at room temperature. The bias voltages with the different polarity were applied to the gate electrode during irradiation to examine the formation mechanisms of the trapped charges in the oxides of these MOS capacitors. The amount of the trapped charges in the oxide were obtained from capacitance pulse voltage characteristics. The generation of the trapped charges are affects with not only the absorbed dose but also the bias polarity applied to the gate electrodes during irradiation. The formation mechanisms of the trapped charges in the oxides were estimated in conjunction with the surface orientation of 6H-SiC substrates. (author)

  7. Atomic and electronic structures of a-SiC:H from tight-binding molecular dynamics

    CERN Document Server

    Ivashchenko, V I; Shevchenko, V I; Ivashchenko, L A; Rusakov, G V

    2003-01-01

    The atomic and electronic properties of amorphous unhydrogenated (a-SiC) and hydrogenated (a-SiC:H) silicon carbides are studied using an sp sup 3 s sup * tight-binding force model with molecular dynamics simulations. The parameters of a repulsive pairwise potential are determined from ab initio pseudopotential calculations. Both carbides are generated from dilute vapours condensed from high temperature, with post-annealing at low temperature for a-SiC:H. A plausible model for the inter-atomic correlations and electronic states in a-SiC:H is suggested. According to this model, the formation of the amorphous network is weakly sensitive to the presence of hydrogen. Hydrogen passivates effectively only the weak bonds of threefold-coordinated atoms. Chemical ordering is very much affected by the cooling rate and the structure of the high-temperature vapour. The as-computed characteristics are in rather good agreement with the results for a-SiC and a-Si:H from ab initio calculations.

  8. Structure and chemistry of passivated SiC/SiO{sub 2} interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Houston Dycus, J.; Xu, Weizong; LeBeau, James M. [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7907 (United States); Lichtenwalner, Daniel J.; Hull, Brett; Palmour, John W. [Power Devices R& D, Wolfspeed, A Cree Company, Research Triangle Park, North Carolina 27709 (United States)

    2016-05-16

    Here, we report on the chemistry and structure of 4H-SiC/SiO{sub 2} interfaces passivated either by nitric oxide annealing or Ba deposition. Using aberration corrected scanning transmission electron microscopy and spectroscopy, we find that Ba and N remain localized at SiC/SiO{sub 2} interface after processing. Further, we find that the passivating species can introduce significant changes to the near-interface atomic structure of SiC. Specifically, we quantify significant strain for nitric oxide annealed sample where Si dangling bonds are capped by N. In contrast, strain is not observed at the interface of the Ba treated samples. Finally, we place these results in the context of field effect mobility.

  9. Discrete impurity band from surface danging bonds in nitrogen and phosphorus doped SiC nanowires

    Science.gov (United States)

    Li, Yan-Jing; Li, Shu-Long; Gong, Pei; Li, Ya-Lin; Cao, Mao-Sheng; Fang, Xiao-Yong

    2018-04-01

    The electronic structure and optical properties of the nitrogen and phosphorus doped silicon carbide nanowires (SiCNWs) are investigated using first-principle calculations based on density functional theory. The results show doping can change the type of the band gap and improve the conductivity. However, the doped SiCNWs form a discrete impurity levels at the Fermi energy, and the dispersion degree decreases with the diameter increasing. In order to reveal the root of this phenomenon, we hydrogenated the doped SiCNWs, found that the surface dangling bonds were saturated, and the discrete impurity levels are degeneracy, which indicates that the discrete impurity band of the doped SiCNWs is derived from the dangling bonds. The surface passivation can degenerate the impurity levels. Therefore, both doping and surface passivation can better improve the photoelectric properties of the SiCNWs. The result can provide additional candidates in producing nano-optoelectronic devices.

  10. Parametric investigation of the formation of epitaxial Ti{sub 3}SiC{sub 2} on 4H-SiC from Al-Ti annealing

    Energy Technology Data Exchange (ETDEWEB)

    Abi-Tannous, T., E-mail: tony.abi-tannous@insa-lyon.fr [Université de Lyon, CNRS, Laboratoire Ampère, INSA-Lyon, UMR 5005, F-69621 (France); Soueidan, M. [Université de Lyon, CNRS, Laboratoire Ampère, INSA-Lyon, UMR 5005, F-69621 (France); Ferro, G. [Université de Lyon, CNRS, Laboratoire des Multimatériaux et Interfaces, UMR 5615, F-69622 (France); Lazar, M. [Université de Lyon, CNRS, Laboratoire Ampère, INSA-Lyon, UMR 5005, F-69621 (France); Toury, B. [Université de Lyon, CNRS, Laboratoire des Multimatériaux et Interfaces, UMR 5615, F-69622 (France); Beaufort, M.F.; Barbot, J.F. [Institut Pprime CNRS - Université de Poitiers - ENSMA - UPR 3346 Département Physique et Mécanique des Matériaux SP2MI 86962 Futuroscope Chasseneuil Cedex (France); Penuelas, J. [Université de Lyon, Institut des Nanotechnologies de Lyon, UMR CNRS 5270, 69134 ECULLY Cedex (France); Planson, D. [Université de Lyon, CNRS, Laboratoire Ampère, INSA-Lyon, UMR 5005, F-69621 (France)

    2015-08-30

    Highlights: • Growth of Ti{sub 3}SiC{sub 2} thin films onto 4H-SiC (0 0 0 1) 8° and 4°-off substrates. • High temperature application for SiC ohmic contact. • Thermal annealing of Ti{sub -}Al layers. • Influence of the composition in the Ti{sub x}Al{sub 1−x} alloy was investigated. • Influence of the annealing temperature (900–1200 °C) after deposition was investigated. • The structural investigations were mainly performed by using X-ray diffraction (XRD), and transmission electron microscopy (TEM). • Elementary and profile characterization were performed using X-Ray photoelectron spectroscopy (XPS). - Abstract: The growth of Ti{sub 3}SiC{sub 2} thin films was studied onto 4H-SiC (0 0 0 1) 8° and 4°-off substrates by thermal annealing of Ti{sub x}Al{sub 1−x} (0.5 ≤ x ≤ 1) layers. The annealing time was fixed at 10 min under Argon atmosphere. The synthesis conditions were also investigated according to the annealing temperature (900–1200 °C) after deposition. X-Ray Diffraction (XRD) and Transmission Electron Microscope (TEM) show that the layer of Ti{sub 3}SiC{sub 2} is epitaxially grown on the 4H-SiC substrate. In addition the interface looks sharp and smooth with evidence of interfacial ordering. Moreover, during the annealing procedure, the formation of unwanted aluminum oxide was detected by using X-Ray Photoelectron Spectroscopy (XPS); this layer can be removed by using a specific annealing procedure.

  11. Nanocatalytic growth of Si nanowires from Ni silicate coated SiC nanoparticles on Si solar cell.

    Science.gov (United States)

    Parida, Bhaskar; Choi, Jaeho; Ji, Hyung Yong; Park, Seungil; Lim, Gyoungho; Kim, Keunjoo

    2013-09-01

    We investigated the nanocatalytic growth of Si nanowires on the microtextured surface of crystalline Si solar cell. 3C-SiC nanoparticles have been used as the base for formation of Ni silicate layer in a catalytic reaction with the Si melt under H2 atmosphere at an annealing temperature of 1100 degrees C. The 10-nm thick Ni film was deposited after the SiC nanoparticles were coated on the microtextured surface of the Si solar cell by electron-beam evaporation. SiC nanoparticles form a eutectic alloy surface of Ni silicate and provide the base for Si supersaturation as well as the Ni-Si alloy layer on Si substrate surface. This bottom reaction mode for the solid-liquid-solid growth mechanism using a SiC nanoparticle base provides more stable growth of nanowires than the top reaction mode growth mechanism in the absence of SiC nanoparticles. Thermally excited Ni nanoparticle forms the eutectic alloy and provides collectively excited electrons at the alloy surface, which reduces the activation energy of the nanocatalytic reaction for formation of nanowires.

  12. Effects of Interface Coating and Nitride Enhancing Additive on Properties of Hi-Nicalon SiC Fiber Reinforced Reaction-Bonded Silicon Nitride Composites

    Science.gov (United States)

    Bhatt, Ramakrishana T.; Hull, David R.; Eldridge, Jeffrey I.; Babuder, Raymond

    2000-01-01

    Strong and tough Hi-Nicalon SiC fiber reinforced reaction-bonded silicon nitride matrix composites (SiC/ RBSN) have been fabricated by the fiber lay-up approach. Commercially available uncoated and PBN, PBN/Si-rich PBN, and BN/SiC coated SiC Hi-Nicalon fiber tows were used as reinforcement. The composites contained approximately 24 vol % of aligned 14 micron diameter SiC fibers in a porous RBSN matrix. Both one- and two-dimensional composites were characterized. The effects of interface coating composition, and the nitridation enhancing additive, NiO, on the room temperature physical, tensile, and interfacial shear strength properties of SiC/RBSN matrix composites were evaluated. Results indicate that for all three coated fibers, the thickness of the coatings decreased from the outer periphery to the interior of the tows, and that from 10 to 30 percent of the fibers were not covered with the interface coating. In the uncoated regions, chemical reaction between the NiO additive and the SiC fiber occurs causing degradation of tensile properties of the composites. Among the three interface coating combinations investigated, the BN/SiC coated Hi-Nicalon SiC fiber reinforced RBSN matrix composite showed the least amount of uncoated regions and reasonably uniform interface coating thickness. The matrix cracking stress in SiC/RBSN composites was predicted using a fracture mechanics based crack bridging model.

  13. Structural Analysis of Polyhedral Oligomeric Silsesquioxane Coated SiC Nanoparticles and Their Applications in Thermoset Polymers

    International Nuclear Information System (INIS)

    Reza-E-Rabby, M.; Jeelani, Sh.; Rangari, V. K.

    2015-01-01

    The SiC nanoparticles (NPs) were sonochemically coated with Octa Isobutyl (OI) polyhedral oligomeric silsesquioxane (POSS) to create a compatible interface between particle and thermoset polymer. X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FTIR), and X-ray diffraction (XRD) techniques were used to analyze the structure of OI-POSS coated SiC nanoparticles. These results revealed the formation of a covalent bonding between SiC and OI-POSS. The transmission electron microscopy (TEM) analysis of OI-POSS coated SiC nanoparticles has also shown the indication of attachment between these two nanoparticles. The OI-POSS coated SiC nanoparticles were further reinforced into a thermoset resin system in order to evaluate mechanical and thermal properties of nano composites. The flexural strength, modulus, and glass transition temperature were found to be enhanced while SiC and OI-POSS coated SiC were infused into epoxy system compared to those properties of neat epoxy resin

  14. Structural Analysis of Polyhedral Oligomeric Silsesquioxane Coated SiC Nanoparticles and Their Applications in Thermoset Polymers

    Directory of Open Access Journals (Sweden)

    Md. Reza-E-Rabby

    2015-01-01

    Full Text Available The SiC nanoparticles (NPs were sonochemically coated with OctaIsobutyl (OI polyhedral oligomeric silsesquioxane (POSS to create a compatible interface between particle and thermoset polymer. X-ray photoelectron spectroscopy (XPS, Fourier transform infrared spectroscopy (FTIR, and X-ray diffraction (XRD techniques were used to analyze the structure of OI-POSS coated SiC nanoparticles. These results revealed the formation of a covalent bonding between SiC and OI-POSS. The transmission electron microscopy (TEM analysis of OI-POSS coated SiC nanoparticles has also shown the indication of attachment between these two nanoparticles. The OI-POSS coated SiC nanoparticles were further reinforced into a thermoset resin system in order to evaluate mechanical and thermal properties of nanocomposites. The flexural strength, modulus, and glass transition temperature were found to be enhanced while SiC and OI-POSS coated SiC were infused into epoxy system compared to those properties of neat epoxy resin.

  15. Al-Si/B{sub 4}C composite coatings on Al-Si substrate by plasma spray technique

    Energy Technology Data Exchange (ETDEWEB)

    Sarikaya, Ozkan [Sakarya University, Faculty of Engineering, Department of Mechanical Engineering, Esentepe Campus, Sakarya 54187 (Turkey); Anik, Selahaddin [Sakarya University, Faculty of Engineering, Department of Mechanical Engineering, Esentepe Campus, Sakarya 54187 (Turkey); Aslanlar, Salim [Sakarya University, Faculty of Technical Education, Department of Mechanical Engineering, Esentepe Campus, Sakarya 54187 (Turkey); Cem Okumus, S. [Sakarya University, Faculty of Engineering, Department of Metallurgical and Materials Engineering, Esentepe Campus, Sakarya 54187 (Turkey); Celik, Erdal [Dokuz Eylul University, Engineering Faculty, Department of Metallurgical and Materials Engineering, Buca, Izmir 35160 (Turkey)]. E-mail: erdal.celik@deu.edu.tr

    2007-07-01

    Plasma-sprayed coatings of Al-Si/B{sub 4}C have been prepared on Al-Si piston alloys for diesel engine motors. The Al-Si/B{sub 4}C composite powders including 5-25 wt% B{sub 4}C were prepared by mixing and ball-milling processes. These powders were deposited on Al-Si substrate using an atmospheric plasma spray technique. The coatings have been characterised with respect to phase composition, microstructure, microhardness, bond strength and thermal expansion. It was found that Al, Si, B{sub 4}C and Al{sub 2}O{sub 3} phases were determined in the coatings with approximately 600 {mu}m thick by using X-ray diffraction analysis. Scanning electron microscope observation revealed that boron carbide particles were uniformly distributed in composite coatings and B{sub 4}C particles were fully wetted by Al-Si alloy. Also, no reaction products were observed in Al-Si/B{sub 4}C composite coatings. It was found that surface roughness, porosity, bond strength and thermal expansion coefficient of composite coatings decreased with increasing fraction of the boron carbide particle. It was demonstrated that the higher the B{sub 4}C content, the higher the hardness of coatings because the hardness of B{sub 4}C is higher than that of Al-Si.

  16. Surface Chemistry Involved in Epitaxy of Graphene on 3C-SiC(111/Si(111

    Directory of Open Access Journals (Sweden)

    Abe Shunsuke

    2010-01-01

    Full Text Available Abstract Surface chemistry involved in the epitaxy of graphene by sublimating Si atoms from the surface of epitaxial 3C-SiC(111 thin films on Si(111 has been studied. The change in the surface composition during graphene epitaxy is monitored by in situ temperature-programmed desorption spectroscopy using deuterium as a probe (D2-TPD and complementarily by ex situ Raman and C1s core-level spectroscopies. The surface of the 3C-SiC(111/Si(111 is Si-terminated before the graphitization, and it becomes C-terminated via the formation of C-rich (6√3 × 6√3R30° reconstruction as the graphitization proceeds, in a similar manner as the epitaxy of graphene on Si-terminated 6H-SiC(0001 proceeds.

  17. Electronic structure and bonding in the ternary silicide YNiSi3

    International Nuclear Information System (INIS)

    Sung, Gi Hong; Kang, Dae Bok

    2003-01-01

    An analysis of the electronic structure and bonding in the ternary silicide YNiSi 3 is made, using extended Hueckel tight-binding calculations. The YNiSi 3 structure consists of Ni-capped Si 2 dimer layers and Si zigzag chains. Significant bonding interactions are present between the silicon atoms in the structure. The oxidation state formalism of (Y 3+ )(Ni 0 )(Si 3 ) 3- for YNiSi 3 constitutes a good starting point to describe its electronic structure. Si atoms receive electrons form the most electropositive Y in YNiSi 3 , and Ni 3d and Si 3p states dominate below the Fermi level. There is an interesting electron balance between the two Si and Ni sublattices. Since the π orbitals in the Si chain and the Ni d and s block levels are almost completely occupied, the charge balance for YNiSi 3 can be rewritten as (Y 3+ )(Ni 2- )(Si 2- )(Si-Si) + , making the Si 2 layers oxidized. These results suggest that the Si zigzag chain contains single bonds and the Si 2 double layer possesses single bonds within a dimer with a partial double bond character. Stronger Si-Si and Ni-Si bonding interactions are important for giving stability to the structure, while essentially no metal-metal bonding exists at all. The 2D metallic behavior of this compound is due to the Si-Si interaction leading to dispersion of the several Si 2 π bands crossing the Fermi level in the plane perpendicular to the crystallographic b axis

  18. Gas-source molecular beam epitaxy of Si(111) on Si(110) substrates by insertion of 3C-SiC(111) interlayer for hybrid orientation technology

    Energy Technology Data Exchange (ETDEWEB)

    Bantaculo, Rolando, E-mail: rolandobantaculo@yahoo.com; Saitoh, Eiji; Miyamoto, Yu; Handa, Hiroyuki; Suemitsu, Maki

    2011-11-01

    A method to realize a novel hybrid orientations of Si surfaces, Si(111) on Si(110), has been developed by use of a Si(111)/3C-SiC(111)/Si(110) trilayer structure. This technology allows us to use the Si(111) portion for the n-type and the Si(110) portion for the p-type channels, providing a solution to the current drive imbalance between the two channels confronted in Si(100)-based complementary metal oxide semiconductor (CMOS) technology. The central idea is to use a rotated heteroepitaxy of 3C-SiC(111) on Si(110) substrate, which occurs when a 3C-SiC film is grown under certain growth conditions. Monomethylsilane (SiH{sub 3}-CH{sub 3}) gas-source molecular beam epitaxy (GSMBE) is used for this 3C-SiC interlayer formation while disilane (Si{sub 2}H{sub 6}) is used for the top Si(111) layer formation. Though the film quality of the Si epilayer leaves a lot of room for betterment, the present results may suffice to prove its potential as a new technology to be used in the next generation CMOS devices.

  19. Cl-intercalated graphene on SiC: Influence of van der Waals forces

    KAUST Repository

    Cheng, Yingchun; Zhu, Zhiyong; Schwingenschlö gl, Udo

    2013-01-01

    The atomic and electronic structures of Cl-intercalated epitaxial graphene on SiC are studied by first-principles calculations. By increasing the Cl concentration, doping levels from n-type to slightly p-type are achieved on the SiC(0001) surface, while a wider range of doping levels is possible on the SiC(0001̄) surface. We find that the Cl atoms prefer bonding to the substrate rather than to the graphene. By varying the Cl concentration the doping level can be tailored. Consideration of van der Waals forces improves the distance between the graphene and the substrate as well as the binding energy, but it is not essential for the formation energy. For understanding the doping mechanism the introduction of non-local van der Waals contributions to the exchange correlation functional is shown to be essential. Copyright © EPLA, 2013.

  20. Durability Evaluation of a Thin Film Sensor System With Enhanced Lead Wire Attachments on SiC/SiC Ceramic Matrix Composites

    Science.gov (United States)

    Lei, Jih-Fen; Kiser, J. Douglas; Singh, Mrityunjay; Cuy, Mike; Blaha, Charles A.; Androjna, Drago

    2000-01-01

    An advanced thin film sensor system instrumented on silicon carbide (SiC) fiber reinforced SiC matrix ceramic matrix composites (SiC/SiC CMCs), was evaluated in a Mach 0.3 burner rig in order to determine its durability to monitor material/component surface temperature in harsh environments. The sensor system included thermocouples in a thin film form (5 microns thick), fine lead wires (75 microns diameter), and the bonds between these wires and the thin films. Other critical components of the overall system were the heavy, swaged lead wire cable (500 microns diameter) that contained the fine lead wires and was connected to the temperature readout, and ceramic attachments which were bonded onto the CMCs for the purpose of securing the lead wire cables, The newly developed ceramic attachment features a combination of hoops made of monolithic SiC or SiC/SiC CMC (which are joined to the test article) and high temperature ceramic cement. Two instrumented CMC panels were tested in a burner rig for a total of 40 cycles to 1150 C (2100 F). A cycle consisted of rapid heating to 1150 C (2100 F), a 5 minute hold at 1150 C (2100 F), and then cooling down to room temperature in 2 minutes. The thin film sensor systems provided repeatable temperature measurements for a maximum of 25 thermal cycles. Two of the monolithic SiC hoops debonded during the sensor fabrication process and two of the SiC/SiC CMC hoops failed during testing. The hoops filled with ceramic cement, however, showed no sign of detachment after 40 thermal cycle test. The primary failure mechanism of this sensor system was the loss of the fine lead wire-to-thin film connection, which either due to detachment of the fine lead wires from the thin film thermocouples or breakage of the fine wire.

  1. Synthesis of Reusable Silica Nanosphere-Supported Pt(IV Complex for Formation of Disulfide Bonds in Peptides

    Directory of Open Access Journals (Sweden)

    Xiaonan Hou

    2017-02-01

    Full Text Available Some peptide-based drugs, including oxytocin, vasopressin, ziconotide, pramlintide, nesiritide, and octreotide, contain one intramolecular disulfide bond. A novel and reusable monodispersed silica nanosphere-supported Pt(IV complex (SiO2@TPEA@Pt(IV; TPEA: N-[3-(trimethoxysilylpropyl]ethylenediamine was synthesized via a four-step procedure and was used for the formation of intramolecular disulfide bonds in peptides. Transmission electron microscopy (TEM and chemical mapping results for the Pt(II intermediates and for SiO2@TPEA@Pt(IV show that the silica nanospheres possess a monodisperse spherical structure and contain uniformly-distributed Si, O, C, N, Cl, and Pt. The valence state of Pt on the silica nanospheres was characterized by X-ray photoelectron spectroscopy (XPS. The Pt(IV loaded on SiO2@TPEA@Pt(IV was 0.15 mmol/g, as determined by UV-VIS spectrometry. The formation of intramolecular disulfides in six dithiol-containing peptides of variable lengths by the use of SiO2@TPEA@Pt(IV was investigated, and the relative oxidation yields were determined by high-performance liquid chromatography (HPLC. In addition, peptide 1 (Ac-CPFC-NH2 was utilized to study the reusability of SiO2@TPEA@Pt(IV. No significant decrease in the relative oxidation yield was observed after ten reaction cycles. Moreover, the structure of SiO2@TPEA@Pt(IV after being used for ten cycles was determined to be similar to its initial one, demonstrating the cycling stability of the complex.

  2. Reduction in the formation temperature of Poly-SiGe alloy thin film in Si/Ge system

    Science.gov (United States)

    Tah, Twisha; Singh, Ch. Kishan; Madapu, K. K.; Sarguna, R. M.; Magudapathy, P.; Ilango, S.

    2018-04-01

    The role of deposition temperature in the formation of poly-SiGe alloy thin film in Si/Ge system is reported. For the set ofsamples deposited without any intentional heating, initiation of alloying starts upon post annealingat ˜ 500 °C leading to the formation of a-SiGe. Subsequently, poly-SiGe alloy phase could formonly at temperature ≥ 800 °C. Whereas, for the set of samples deposited at 500 °C, in-situ formation of poly-SiGe alloy thin film could be observed. The energetics of the incoming evaporated atoms and theirsubsequent diffusionsin the presence of the supplied thermal energy is discussed to understand possible reasons for lowering of formation temperature/energyof the poly-SiGe phase.

  3. Packaging Technologies for 500C SiC Electronics and Sensors

    Science.gov (United States)

    Chen, Liang-Yu

    2013-01-01

    Various SiC electronics and sensors are currently under development for applications in 500C high temperature environments such as hot sections of aerospace engines and the surface of Venus. In order to conduct long-term test and eventually commercialize these SiC devices, compatible packaging technologies for the SiC electronics and sensors are required. This presentation reviews packaging technologies developed for 500C SiC electronics and sensors to address both component and subsystem level packaging needs for high temperature environments. The packaging system for high temperature SiC electronics includes ceramic chip-level packages, ceramic printed circuit boards (PCBs), and edge-connectors. High temperature durable die-attach and precious metal wire-bonding are used in the chip-level packaging process. A high temperature sensor package is specifically designed to address high temperature micro-fabricated capacitive pressure sensors for high differential pressure environments. This presentation describes development of these electronics and sensor packaging technologies, including some testing results of SiC electronics and capacitive pressure sensors using these packaging technologies.

  4. Formation of Si/SiC multilayers by low-energy ion implantation and thermal annealing

    NARCIS (Netherlands)

    Dobrovolskiy, S.; Yakshin, Andrey; Tichelaar, F.D.; Verhoeven, J.; Louis, Eric; Bijkerk, Frederik

    2010-01-01

    Si/SiC multilayer systems for XUV reflection optics with a periodicity of 10–20 nm were produced by sequential deposition of Si and implantation of 1 keV View the MathML source ions. Only about 3% of the implanted carbon was transferred into the SiC, with a thin, 0.5–1 nm, buried SiC layer being

  5. Formation of Ge dot or film in Ge/Si heterostructure by using sub-monolayer carbon deposition on top and in-situ post annealing

    Energy Technology Data Exchange (ETDEWEB)

    Itoh, Yuhki, E-mail: itoh.yuhki@ecei.tohoku.ac.jp; Hatakeyama, Shinji; Kawashima, Tomoyuki; Washio, Katsuyoshi

    2016-03-01

    Effects of carbon (C) atoms on solid-phase epitaxial growth of Ge on Si(100) have been studied. C and Ge layers were deposited on Si(100) substrates at low temperature (150–300 °C) by using solid-source molecular beam epitaxy (MBE) system and subsequently annealed at 650 °C in the MBE chamber. The surface morphology after annealing changed depending on deposited amounts of C and deposition temperature of Ge. Ge dots were formed for small amounts of C while smooth Ge films were formed by large amounts of C varying with the Ge deposition temperature. The surface morphology after annealing was also affected by the as-deposited Ge crystallinity. The change in surface morphology depending on the amounts of deposited C was considered to be affected by the formation of Ge–C bonds which relieved the misfit strain between Ge and Si. The crystallinity of Ge deteriorated with increasing C coverage due to the incorporation of insoluble C atoms in the shape of both dots and films. - Highlights: • Effects of carbon on solid-phase epitaxy of C/Ge/Si(100) were studied. • Surface morphology changed depending on C amounts and Ge deposition temperature. • Solid-phase growth of Ge changed from large dots to smooth films with C coverage. • Transition of surface morphology was affected by the formation of Ge–C bonds.

  6. The three-electron bond =Si

    DEFF Research Database (Denmark)

    Mattsson, Kent Erik

    2013-01-01

    The formation and bleaching of color centers during annealing of pre-darkened ytterbium-doped silica fibers is modeled by three-electron bond (TEB) = Si... bonds is described in terms of a Markov statistical model with state change set by Bose-Einstein phonon statistics. The center hold one terminal and four active states with activation energies for transitions among these found to match bond energies of molecular oxygen in ionic character bonds of 1...... and 1½ bond order. Experimentally observed in- and decrease in absorption during ramp and isothermal annealing of pre-darkened ytterbium co-doped silica fibers are hereby matched by a set of = Si

  7. Spectroscopic Identification of the Au-C Bond Formation upon Electroreduction of an Aryl Diazonium Salt on Gold.

    Science.gov (United States)

    Guo, Limin; Ma, Lipo; Zhang, Yelong; Cheng, Xun; Xu, Ye; Wang, Jin; Wang, Erkang; Peng, Zhangquan

    2016-11-08

    Electroreduction of aryl diazonium salts on gold can produce organic films that are more robust than their analogous self-assembled monolayers formed from chemical adsorption of organic thiols on gold. However, whether the enhanced stability is due to the Au-C bond formation remains debated. In this work, we report the electroreduction of an aryl diazonium salt of 4,4'-disulfanediyldibenzenediazonium on gold forming a multilayer of Au-(Ar-S-S-Ar) n , which can be further degraded to a monolayer of Au-Ar-S - by electrochemical cleavage of the S-S moieties within the multilayer. By conducting an in situ surface-enhanced Raman spectroscopic study of both the multilayer formation/degradation and the monolayer reduction/oxidation processes, coupled to density functional theory calculations, we provide compelling evidence that an Au-C bond does form upon electroreduction of aryl diazonium salts on gold and that the enhanced stability of the electrografted organic films is due to the Au-C bond being intrinsically stronger than the Au-S bond for a given phenylthiolate compound by ca. 0.4 eV.

  8. Passivation of hexagonal SiC surfaces by hydrogen termination

    International Nuclear Information System (INIS)

    Seyller, Thomas

    2004-01-01

    Surface hydrogenation is a well established technique in silicon technology. It is easily accomplished by wet-chemical procedures and results in clean and unreconstructed surfaces, which are extremely low in charged surface states and stable against oxidation in air, thus constituting an ideal surface preparation. As a consequence, methods for hydrogenation have been sought for preparing silicon carbide (SiC) surfaces with similar well defined properties. It was soon recognized, however, that due to different surface chemistry new ground had to be broken in order to find a method leading to the desired monatomic hydrogen saturation. In this paper the results of H passivation of SiC surfaces by high-temperature hydrogen annealing will be discussed, thereby placing emphasis on chemical, structural and electronic properties of the resulting surfaces. In addition to their unique properties, hydrogenated hexagonal SiC {0001} surfaces offer the interesting possibility of gaining insight into the formation of silicon- and carbon-rich reconstructions as well. This is due to the fact that to date hydrogenation is the only method providing oxygen-free surfaces with a C to Si ratio of 1:1. Last but not least, the electronic properties of hydrogen-free SiC {0001} surfaces will be alluded to. SiC {0001} surfaces are the only known semiconductor surfaces that can be prepared in their unreconstructed (1 x 1) state with one dangling bond per unit cell by photon induced hydrogen desorption. These surfaces give indications of a Mott-Hubbard surface band structure

  9. Microwave joining of SiC ceramics and composites

    Energy Technology Data Exchange (ETDEWEB)

    Ahmad, I.; Silberglitt, R.; Tian, Y.L. [FM Technologies, Inc., Fairfax, VA (United States); Katz, J.D. [Los Alamos National Lab., NM (United States)

    1997-04-01

    Potential applications of SiC include components for advanced turbine engines, tube assemblies for radiant burners and petrochemical processing and heat exchangers for high efficiency electric power generation systems. Reliable methods for joining SiC are required in order to cost-effectively fabricate components for these applications from commercially available shapes and sizes. This manuscript reports the results of microwave joining experiments performed using two different types of SiC materials. The first were on reaction bonded SiC, and produced joints with fracture toughness equal to or greater than that of the base material over an extended range of joining temperatures. The second were on continuous fiber-reinforced SiC/SiC composite materials, which were successfully joined with a commercial active brazing alloy, as well as by using a polymer precursor.

  10. SiC formation for a solar cell passivation layer using an RF magnetron co-sputtering system

    Science.gov (United States)

    2012-01-01

    In this paper, we describe a method of amorphous silicon carbide film formation for a solar cell passivation layer. The film was deposited on p-type silicon (100) and glass substrates by an RF magnetron co-sputtering system using a Si target and a C target at a room-temperature condition. Several different SiC [Si1-xCx] film compositions were achieved by controlling the Si target power with a fixed C target power at 150 W. Then, structural, optical, and electrical properties of the Si1-xCx films were studied. The structural properties were investigated by transmission electron microscopy and secondary ion mass spectrometry. The optical properties were achieved by UV-visible spectroscopy and ellipsometry. The performance of Si1-xCx passivation was explored by carrier lifetime measurement. PMID:22221730

  11. A thermochemical approach to enhance hydrophobicity of SiC/SiO{sub 2} powder using γ-methacryloxypropyl trimethoxy silane and octylphenol polyoxyethylene ether (7)

    Energy Technology Data Exchange (ETDEWEB)

    Li, Chunxue; Feng, Dandan; Wang, Xiangke; Li, Zhihong; Zhu, Yumei, E-mail: zhuyumei@tju.edu.cn

    2016-01-01

    Graphical abstract: Through the exploration of modification mechanism, the hydrophilic properties of SiC/SiO{sub 2}-KH570-OP-7 were far superior to SiC/SiO{sub 2}-KH570. - Highlights: • A novel universal method is performed to enhance hydrophobicity of SiC/SiO{sub 2} powder. • Through pyrolysis of KH570 and OP-7, hydrophilic groups is grafted. • The hydrophobicity of SiC/SiO{sub 2}-KH570-OP-7 was far superior to SiC/SiO{sub 2}-KH570. • A possible formation mechanism of hydrophilic surface was proposed. • Surface changes on SiC/SiO{sub 2}-KH570-OP-7 powder were analyzed via SEM, FTIR, XPS. - Abstract: A thermochemical synthetic methodology for silicon carbide/silica (SiC/SiO{sub 2}) powder modified by integrating γ-methacryloxypropyl trimethoxy silane (KH570) and octylphenol polyoxyethylene ether (7) (OP-7) with hydrophilic SiC/SiO{sub 2} particles is described. On account of weak hydrophobicity of SiC/SiO{sub 2} powder modified by KH570 (SiC/SiO{sub 2}-KH570), the study focuses on the improvement of hydrophobicity utilizing alkylation reaction between OP-7 and KH570 at high temperature. Compared with using KH570 alone, SiC/SiO{sub 2} powder modified by KH570 and OP-7 (SiC/SiO{sub 2}-KH570-OP-7) shows better water resistance, and also an increased contact angle from 73.8° to 136.4°, resulting thus an improved hydrophobicity. Fourier transform infrared spectroscopy (FTIR), as well as X-ray photoelectron spectroscopy (XPS), was utilized to characterize these surfaces, and the results indicated that KH570 and OP-7 can be covalently bonded on the surface of SiC/SiO{sub 2} powder. Furthermore, it has been deeply investigated in the paper not only the possible modes of non-oxidative thermal degradation of OP-7 and KH570, but also the formation mechanism of more hydrophobic SiC/SiO{sub 2}-KH570-OP-7 powder, which probably will have a potential utility for other inorganic materials.

  12. Sulfur passivation for the formation of Si-terminated Al{sub 2}O{sub 3/}SiGe(0 0 1) interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Sardashti, Kasra [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, CA (United States); Materials Science and Engineering Program, University of California, San Diego, La Jolla, CA (United States); Hu, Kai-Ting [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, CA (United States); Department of Mechanical and Aerospace Engineering, University of California, San Diego, La Jolla, CA (United States); Tang, Kechao [Department of Materials Science and Engineering, Stanford University, CA (United States); Park, Sangwook; Kim, Hyonwoong [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, CA (United States); Materials Science and Engineering Program, University of California, San Diego, La Jolla, CA (United States); Madisetti, Shailesh [Department of Nanoscale Science and Engineering, University at Albany—State University of New York, Albany, NY (United States); McIntyre, Paul [Department of Materials Science and Engineering, Stanford University, CA (United States); Oktyabrsky, Serge [Department of Nanoscale Science and Engineering, University at Albany—State University of New York, Albany, NY (United States); Siddiqui, Shariq; Sahu, Bhagawan [TD Research, GLOBALFOUNDRIES USA, Inc., Albany, NY (United States); Yoshida, Noami; Kachian, Jessica [Applied Materials, Inc., Santa Clara, CA (United States); Kummel, Andrew, E-mail: akummel@ucsd.edu [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, CA (United States)

    2016-03-15

    Graphical abstract: - Highlights: • Effect of wet sulfur passivation on the electrical properties of Al{sub 2}O{sub 3}/SiGe(0 0 1) interfaces has been determined. • EOT of 2.1 nm has been achieved for ALD Al{sub 2}O{sub 3} deposited directly on SiGe(0 0 1) surfaces. • Sulfur passivation has been found to passivate the Al{sub 2}O{sub 3} interface with Si−O−Al bonds. • Sulfur passivation is found to significantly reduce the GeO{sub x} or Ge−O−Al content at the Al{sub 2}O{sub 3}/SiGe interface therefore improving the reliability. • Sulfur passivation extends the surface stability prior to oxide ALD to up to an hour with no dramatic change in D{sub it}, C{sub ox} or V{sub FB} of the resulting devices. - Abstract: Sulfur passivation is used to electrically and chemically passivate the silicon–germanium (SiGe) surfaces before and during the atomic layer deposition (ALD) of aluminum oxide (Al{sub 2}O{sub 3}). The electrical properties of the interfaces were examined by variable frequency capacitance–voltage (C–V) spectroscopy. Interface compositions were determined by angle-resolved X-ray photoelectron spectroscopy (AR-XPS). The sulfur adsorbs to a large fraction of surface sites on the SiGe(0 0 1) surface, protecting the surface from deleterious surface reactions during processing. Sulfur passivation (a) improved the air stability of the cleaned surfaces prior to ALD, (b) increased the stability of the surface during high-temperature deposition, and (c) increased the Al{sub 2}O{sub 3} ALD nucleation density on SiGe, thereby lowering the leakage current. S passivation suppressed formation of Ge−O bonds at the interface, leaving the majority of the Al{sub 2}O{sub 3}–SiGe interface terminated with direct Si−O−Al bonding.

  13. Oxidation of SiC/BN/SiC Composites in Reduced Oxygen Partial Pressures

    Science.gov (United States)

    Opila, Elizabeth J.; Boyd, Meredith

    2010-01-01

    SiC fiber-reinforced SiC composites with a BN interphase are proposed for use as leading edge structures of hypersonic vehicles. The durability of these materials under hypersonic flight conditions is therefore of interest. Thermogravimetric analysis was used to characterize the oxidation kinetics of both the constituent fibers and composite coupons at four temperatures: 816, 1149, 1343, and 1538 C (1500, 2100, 2450, and 2800 F) and in oxygen partial pressures between 5% and 0.1% (balance argon) at 1 atm total pressure. One edge of the coupons was ground off so the effects of oxygen ingress into the composite could be monitored by post-test SEM and EDS. Additional characterization of the oxidation products was conducted by XPS and TOF-SIMS. Under most conditions, the BN oxidized rapidly, leading to the formation of borosilicate glass. Rapid initial oxidation followed by volatilization of boria lead to protective oxide formation and further oxidation was slow. At 1538C in 5% oxygen, both the fibers and coupons exhibited borosilicate glass formation and bubbling. At 1538C in 0.1% oxygen, active oxidation of both the fibers and the composites was observed leading to rapid SiC degradation. BN oxidation at 1538C in 0.1% oxygen was not significant.

  14. Transformation mechanism of n-butyl terminated Si nanoparticles embedded into Si1-xCx nanocomposites mixed with Si nanoparticles and C atoms

    International Nuclear Information System (INIS)

    Shin, J.W.; Oh, D.H.; Kim, T.W.; Cho, W.J.

    2009-01-01

    Bright-field transmission electron microscopy (TEM) images, high-resolution TEM (HRTEM) images, and fast-Fourier transformed electron-diffraction patterns showed that n-butyl terminated Si nanoparticles were aggregated. The formation of Si 1-x C x nanocomposites was mixed with Si nanoparticles and C atoms embedded in a SiO 2 layer due to the diffusion of C atoms from n-butyl termination shells into aggregated Si nanoparticles. Atomic force microscopy (AFM) images showed that the Si 1-x C x nanocomposites mixed with Si nanoparticles and C atoms existed in almost all regions of the SiO 2 layer. The formation mechanism of Si nanoparticles and the transformation mechanism of n-butyl terminated Si nanoparticles embedded into Si 1-x C x nanocomposites mixed with Si nanoparticles and C atoms are described on the basis of the TEM, HRTEM, and AFM results. These results can help to improve the understanding of the formation mechanism of Si nanoparticles.

  15. Biomorphous SiSiC/Al-Si ceramic composites manufactured by squeeze casting: microstructure and mechanical properties

    Energy Technology Data Exchange (ETDEWEB)

    Zollfrank, C.; Travitzky, N.; Sieber, H.; Greil, P. [Department of Materials Science, Glass and Ceramics, University of Erlangen-Nuernberg (Germany); Selchert, T. [Advanced Ceramics Group, Technical University of Hamburg-Harburg (Germany)

    2005-08-01

    SiSiC/Al-Si composites were fabricated by pressure-assisted infiltration of an Al-Si alloy into porous biocarbon preforms derived from the rattan palm. Al-Si alloy was found in the pore channels of the biomorphous SiSiC preform, whereas SiC and carbon were present in the struts. The formation of a detrimental Al{sub 4}C{sub 3}-phase was not observed in the composites. A bending strength of 200 MPa was measured. The fractured surfaces showed pull-out of the Al-alloy. (Abstract Copyright [2005], Wiley Periodicals, Inc.)

  16. Characterizing the Soldering Alloy Type In–Ag–Ti and the Study of Direct Soldering of SiC Ceramics and Copper

    Directory of Open Access Journals (Sweden)

    Roman Koleňák

    2018-04-01

    Full Text Available The aim of the research was to characterize the soldering alloy In–Ag–Ti type, and to study the direct soldering of SiC ceramics and copper. The In10Ag4Ti solder has a broad melting interval, which mainly depends on its silver content. The liquid point of the solder is 256.5 °C. The solder microstructure is composed of a matrix with solid solution (In, in which the phases of titanium (Ti3In4 and silver (AgIn2 are mainly segregated. The tensile strength of the solder is approximately 13 MPa. The strength of the solder increased with the addition of Ag and Ti. The solder bonds with SiC ceramics, owing to the interaction between active In metal and silicon infiltrated in the ceramics. XRD analysis has proven the interaction of titanium with ceramic material during the formation of the new minority phases of titanium silicide—SiTi and titanium carbide—C5Ti8. In and Ag also affect bond formation with the copper substrate. Two new phases were also observed in the bond interphase—(CuAg6In5 and (AgCuIn2. The average shear strength of a combined joint of SiC–Cu, fabricated with In10Ag4Ti solder, was 14.5 MPa. The In–Ag–Ti solder type studied possesses excellent solderability with several metallic and ceramic materials.

  17. Diffusion Bonded CVC SiC for Large UVOIR Telescope Mirrors and Structures, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Trex proposes to demonstrate a novel ceramic joining technology (solid state bonding) for CVC SiC® that allows "seamless" joining of smaller, easily manufactured,...

  18. Palladium transport in SiC

    International Nuclear Information System (INIS)

    Olivier, E.J.; Neethling, J.H.

    2012-01-01

    Highlights: ► We investigate the reaction of Pd with SiC at typical HTGR operating temperatures. ► The high temperature mobility of palladium silicides within polycrystalline SiC was studied. ► Corrosion of SiC by Pd was seen in all cases. ► The preferential corrosion and penetration of Pd along grain boundaries in SiC was found. ► The penetration and transport of palladium silicides in SiC along grain boundaries was found. - Abstract: This paper reports on a transmission electron microscopy (TEM) and scanning electron microscopy (SEM) study of Pd corroded SiC. The reaction of Pd with different types of SiC at typical HTGR operating temperatures was examined. In addition the high temperature mobility of palladium silicides within polycrystalline SiC was investigated. The results indicated corrosion of the SiC by Pd in all cases studied. The corrosion leads to the formation of palladium silicides within the SiC, with the predominant phase found being Pd 2 Si. Evidence for the preferential corrosion and penetration of Pd along grain boundaries in polycrystalline SiC was found. The penetration and transport, without significant corrosion, of palladium silicides into polycrystalline SiC along grain boundaries was also observed. Implications of the findings with reference to the use of Tri Isotropic particles in HTGRs will be discussed.

  19. Anisotropy in elastic properties of TiSi2 (C49, C40 and C54), TiSi and Ti5Si3: an ab-initio density functional study

    International Nuclear Information System (INIS)

    Niranjan, Manish K

    2015-01-01

    We present a comparative study of the anisotropy in the elastic properties of the C49, C54 and C40 phases of TiSi 2 , as well as orthorhombic TiSi and hexagonal Ti 5 Si 3 . The elastic constants, elastic moduli, Debye temperature and sound velocities are computed within the framework of density functional theory. The computed values of the elastic constants and moduli are found to be in excellent agreement with available experimental values. The average elastic moduli, such as Young’s modulus, shear modulus, bulk modulus and Poisson’s ratio, of polycrystalline aggregates are computed using the computed elastic constants of single crystals. The anisotropy in elastic properties is analyzed using estimates of shear anisotropic factors, bulk modulus anisotropic factors and variations in Young’s and bulk moduli in different crystallographic directions. Among the Ti–Si phases, the computed directional Young’s modulus profiles of C49 TiSi 2 and C40 TiSi 2 are found to be quite similar to those of bulk Si and Ti, respectively. In addition to the elastic properties, the electronic structure of five Ti–Si phases is studied. The density of states and planar charge density profiles reveal mixed covalent–metallic bonding in all Ti–Si phases. (paper)

  20. Influence wt.% of SiC and borax on the mechanical properties of AlSi-Mg-TiB-SiC composite by the method of semi solid stir casting

    Science.gov (United States)

    Bhiftime, E. I.; Guterres, Natalino F. D. S.; Haryono, M. B.; Sulardjaka, Nugroho, Sri

    2017-04-01

    SiC particle reinforced metal matrix composites (MMCs) with solid semi stir casting method is becoming popular in recent application (automotive, aerospace). Stirring the semi solid condition is proven to enhance the bond between matrix and reinforcement. The purpose of this study is to investigate the effect of the SiC wt.% and the addition of borax on mechanical properties of composite AlSi-Mg-TiB-SiC and AlSi-Mg-TiB-SiC/Borax. Specimens was tested focusing on the density, porosity, tensile test, impact test microstructure and SEM. AlSi is used as a matrix reinforced by SiC with percentage variations (10, 15, 20 wt.%). Giving wt.% Borax which is the ratio of 1: 4 between wt.% SiC. The addition of 1.5% of TiB gives grain refinement. The use of semi-solid stir casting method is able to increase the absorption of SiC particles into a matrix AlSi evenly. The improved composite presented here can be used as a guideline to make a new composite.

  1. Research progress of III-V laser bonding to Si

    Science.gov (United States)

    Bo, Ren; Yan, Hou; Yanan, Liang

    2016-12-01

    The vigorous development of silicon photonics makes a silicon-based light source essential for optoelectronics' integration. Bonding of III-V/Si hybrid laser has developed rapidly in the last ten years. In the tireless efforts of researchers, we are privileged to see these bonding methods, such as direct bonding, medium adhesive bonding and low temperature eutectic bonding. They have been developed and applied to the research and fabrication of III-V/Si hybrid lasers. Some research groups have made remarkable progress. Tanabe Katsuaki of Tokyo University successfully implemented a silicon-based InAs/GaAs quantum dot laser with direct bonding method in 2012. They have bonded the InAs/GaAs quantum dot laser to the silicon substrate and the silicon ridge waveguide, respectively. The threshold current of the device is as low as 200 A/cm2. Stevan Stanković and Sui Shaoshuai successfully produced a variety of hybrid III-V/Si laser with the method of BCB bonding, respectively. BCB has high light transmittance and it can provide high bonding strength. Researchers of Tokyo University and Peking University have realized III-V/Si hybrid lasers with metal bonding method. We describe the progress in the fabrication of III-V/Si hybrid lasers with bonding methods by various research groups in recent years. The advantages and disadvantages of these methods are presented. We also introduce the progress of the growth of III-V epitaxial layer on silicon substrate, which is also a promising method to realize silicon-based light source. I hope that readers can have a general understanding of this field from this article and we can attract more researchers to focus on the study in this field.

  2. Vacancy effects on the formation of He and Kr cavities in 3C-SiC irradiated and annealed at elevated temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Zang, Hang, E-mail: zanghang@xjtu.edu.cn [Department of Nuclear Science and Technology, Xi’an Jiaotong University, Xi’an 710049 (China); Jiang, Weilin, E-mail: weilin.jiang@pnnl.gov [Pacific Northwest National Laboratory, Richland, WA 99352 (United States); Liu, Wenbo [Department of Nuclear Science and Technology, Xi’an Jiaotong University, Xi’an 710049 (China); Devaraj, Arun; Edwards, Danny J.; Henager, Charles H.; Kurtz, Richard J. [Pacific Northwest National Laboratory, Richland, WA 99352 (United States); Li, Tao; He, Chaohui; Yun, Di [Department of Nuclear Science and Technology, Xi’an Jiaotong University, Xi’an 710049 (China); Wang, Zhiguang [Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000 (China)

    2016-12-15

    Highlights: • He and Kr cavities are formed in ion-implanted and 1600 °C annealed 3C-SiC. • A higher vacancy concentration leads to formation of cavities with a smaller size and higher density. • Presence of He in irradiated 3C-SiC can significantly promote cavity growth. • Small voids are formed in Kr ion penetrated 3C-SiC during thermal annealing at 1600 °C. • Local Kr migration and trapping at cavities in SiC are observed, but long-range Kr diffusion does not occur at 1600 °C. - Abstract: Polycrystalline 3C-SiC was sequentially irradiated at 400 and 750 °C with 120 keV He{sup 2+} and 4 MeV Kr{sup 15+} ions to 10{sup 17} and 4 × 10{sup 16} cm{sup −2}, respectively. The Kr{sup 15+} ions penetrated the entire depth region of the He{sup 2+} ion implantation. Three areas of He{sup 2+}, Kr{sup 15+} and He{sup 2+} + Kr{sup 15+} ion implanted SiC were created through masked overlapping irradiation. The sample was subsequently annealed at 1600 °C in vacuum and characterized using cross-sectional transmission electron microscopy and energy-dispersive X-ray spectroscopy. Compared to the He{sup 2+} ion only implanted SiC, He cavities show a smaller size and higher density in the co-implanted SiC. At 25 dpa, presence of He in the co-implanted 3C-SiC significantly promotes cavity growth; much smaller voids are formed in the Kr{sup 15+} ion only irradiated SiC at the same dose. In addition, local Kr migration and trapping at cavities occurs, but long-range Kr diffusion in SiC is not observed up to 1600 °C.

  3. A novel approach for a C-11C bond formation: synthesis of 17α-([11C]prop-1-ynyl)-3-methoxy-3,17β-estradiol

    International Nuclear Information System (INIS)

    Wuest, F.; Zessin, J.

    2002-01-01

    A novel method for a 11 C-C bond formation was developed, employing a cross-coupling reaction between a terminal acetylene and [ 11 C]methyl iodide. The method was used for the synthesis of 17α-([ 11 C]prop-1-ynyl)-3-methoxy-3,17β-estadiol. (orig.)

  4. Electron doping through lithium intercalation to interstitial channels in tetrahedrally bonded SiC

    Energy Technology Data Exchange (ETDEWEB)

    Sakai, Yuki [Department of Applied Physics, The University of Tokyo, 7-3-1, Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Center for Computational Materials, Institute for Computational Engineering and Sciences, The University of Texas at Austin, Austin, Texas 78712 (United States); Oshiyama, Atsushi [Department of Applied Physics, The University of Tokyo, 7-3-1, Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)

    2015-11-07

    We report on first-principles calculations that clarify the effect of lithium atom intercalation into zinc blende 3C-silicon carbide (3C-SiC) on electronic and structural properties. Lithium atoms inside 3C-SiC are found to donate electrons to 3C-SiC that is an indication of a new way of electron doping through the intercalation. The electrons doped into the conduction band interact with lithium cations and reduce the band spacing between the original valence and conduction bands. We have also found that a silicon monovacancy in 3C-SiC promotes the lithium intercalation, showing that the vacancy generation makes SiC as a possible anode material for lithium-ion battery.

  5. Metastability of a-SiO{sub x}:H thin films for c-Si surface passivation

    Energy Technology Data Exchange (ETDEWEB)

    Serenelli, L., E-mail: luca.serenelli@enea.it [ENEA Research centre “Casaccia”, via Anguillarese 301, 00123 Rome (Italy); DIET University of Rome “Sapienza”, via Eudossiana 18, 00184 Rome (Italy); Martini, L. [DIET University of Rome “Sapienza”, via Eudossiana 18, 00184 Rome (Italy); Imbimbo, L. [ENEA Research centre “Casaccia”, via Anguillarese 301, 00123 Rome (Italy); DIET University of Rome “Sapienza”, via Eudossiana 18, 00184 Rome (Italy); Asquini, R. [DIET University of Rome “Sapienza”, via Eudossiana 18, 00184 Rome (Italy); Menchini, F.; Izzi, M.; Tucci, M. [ENEA Research centre “Casaccia”, via Anguillarese 301, 00123 Rome (Italy)

    2017-01-15

    Highlights: • a-SiO{sub x}:H film deposition by RF-PECVD is optimized from SiH{sub 4}, CO{sub 2} and H{sub 2} gas mixture. • Metastability of a-SiO{sub x}:H/c-Si passivation is investigated under thermal annealing and UV exposure. • A correlation between passivation metastability and Si−H bonds is found by FTIR spectra. • A metastability model is proposed. - Abstract: The adoption of a-SiO{sub x}:H films obtained by PECVD in heterojunction solar cells is a key to further increase their efficiency, because of its transparency in the UV with respect to the commonly used a-Si:H. At the same time this layer must guarantee high surface passivation of the c-Si to be suitable in high efficiency solar cell manufacturing. On the other hand the application of amorphous materials like a-Si:H and SiN{sub x} on the cell frontside expose them to the mostly energetic part of the sun spectrum, leading to a metastability of their passivation properties. Moreover as for amorphous silicon, thermal annealing procedures are considered as valuable steps to enhance and stabilize thin film properties, when performed at opportune temperature. In this work we explored the reliability of a-SiO{sub x}:H thin film layers surface passivation on c-Si substrates under UV exposition, in combination with thermal annealing steps. Both p- and n-type doped c-Si substrates were considered. To understand the effect of UV light soaking we monitored the minority carriers lifetime and Si−H and Si−O bonding, by FTIR spectra, after different exposure times to light coming from a deuterium lamp, filtered to UV-A region, and focused on the sample to obtain a power density of 50 μW/cm{sup 2}. We found a certain lifetime decrease after UV light soaking in both p- and n-type c-Si passivated wafers according to a a-SiO{sub x}:H/c-Si/a-SiO{sub x}:H structure. The role of a thermal annealing, which usually enhances the as-deposited SiO{sub x} passivation properties, was furthermore considered. In

  6. Etching Enhancement Followed by Nitridation on Low-k SiOCH Film in Ar/C5F10O Plasma

    Science.gov (United States)

    Miyawaki, Yudai; Shibata, Emi; Kondo, Yusuke; Takeda, Keigo; Kondo, Hiroki; Ishikawa, Kenji; Okamoto, Hidekazu; Sekine, Makoto; Hori, Masaru

    2013-02-01

    The etching rates of low-dielectric-constant (low-k), porous SiOCH (p-SiOCH) films were increased by nitrogen-added Ar/C5F10O plasma etching in dual-frequency (60 MHz/2 MHz)-excited parallel plate capacitively coupled plasma. Previously, perfluoropropyl vinyl ether [C5F10O] provided a very high density of CF3+ ions [Nagai et al.: Jpn. J. Appl. Phys. 45 (2006) 7100]. Surface nitridation on the p-SiOCH surface exposed to Ar/N2 plasma led to the etching of larger amounts of p-SiOCH in Ar/C5F10O plasma, which depended on the formation of bonds such as =C(sp2)=N(sp2)- and -C(sp)≡N(sp).

  7. Combined Thermomechanical and Environmental Durability of Environmental Barrier Coating Systems on SiC/SiC Ceramic Matrix Composites

    Science.gov (United States)

    Zhu, Dongming; Harder, Bryan; Bhatt, Ramakrishna

    2016-01-01

    Environmental barrier coatings (EBCs) and SiC/SiC ceramic matrix composites (CMCs) will play a crucial role in next generation turbine engines for hot-section component applications. The development of prime-reliant environmental barrier coatings is essential to the EBC-CMC system durability, ensuring the successful implementations of the high temperature and lightweight engine component technologies for engine applications.This paper will emphasize recent NASA environmental barrier coating and CMC developments for SiC/SiC turbine airfoil components, utilizing advanced coating compositions and processing methods. The emphasis has been particularly placed on thermomechanical and environment durability evaluations of EBC-CMC systems. We have also addressed the integration of the EBCs with advanced SiC/SiC CMCs, and studied the effects of combustion environments and Calcium-Magnesium-Alumino-Silicate (CMAS) deposits on the durability of the EBC-CMC systems under thermal gradient and mechanical loading conditions. Advanced environmental barrier coating systems, including multicomponent rare earth silicate EBCs and HfO2-Si based bond coats, will be discussed for the performance improvements to achieve better temperature capability and CMAS resistance for future engine operating conditions.

  8. Origin of temperature-induced low friction of sputtered Si-containing amorphous carbon coatings

    International Nuclear Information System (INIS)

    Jantschner, O.; Field, S.K.; Holec, D.; Fian, A.; Music, D.; Schneider, J.M.; Zorn, K.; Mitterer, C.

    2015-01-01

    This work reports on a tribological study of magnetron-sputtered silicon-containing amorphous carbon thin films vs. their alumina counterparts. Temperature cycling during ball-on-disk tests in humid air revealed a decrease in the coefficient of friction from 0.3 to <0.02 beyond 240 ± 15 °C. Systematic variation of the environment confirmed oxygen to be responsible for the low friction. X-ray photoelectron spectroscopy of the wear tracks indicates oxidation of Si-C bonds and formation of Si-O-C bonds, followed by further oxidation to SiO 2 above 450 °C. Ab initio molecular dynamics simulations of gas interactions with the a-C surface revealed dissociation of O 2 and the formation of oxides. Additional density functional theory calculations of Si incorporation into a graphene layer, resembling the surface of the film, showed preferential attraction of gaseous species (H, O, -OH, H 2 O), to Si-sites as compared to C-sites. Hence, the temperature- and atmosphere-induced changes in friction coefficient can be understood based on correlative X-ray photoelectron spectroscopy and ab initio data: the formation of Si-O-C bonds stemming from a reaction of the as-deposited coating with atmosphere in the tribological contact is observed by theory and experiment

  9. Palladium transport in SiC

    Energy Technology Data Exchange (ETDEWEB)

    Olivier, E.J., E-mail: jolivier@nmmu.ac.za [Centre for High Resolution Transmission Electron Microscopy, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Neethling, J.H. [Centre for High Resolution Transmission Electron Microscopy, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa)

    2012-03-15

    Highlights: Black-Right-Pointing-Pointer We investigate the reaction of Pd with SiC at typical HTGR operating temperatures. Black-Right-Pointing-Pointer The high temperature mobility of palladium silicides within polycrystalline SiC was studied. Black-Right-Pointing-Pointer Corrosion of SiC by Pd was seen in all cases. Black-Right-Pointing-Pointer The preferential corrosion and penetration of Pd along grain boundaries in SiC was found. Black-Right-Pointing-Pointer The penetration and transport of palladium silicides in SiC along grain boundaries was found. - Abstract: This paper reports on a transmission electron microscopy (TEM) and scanning electron microscopy (SEM) study of Pd corroded SiC. The reaction of Pd with different types of SiC at typical HTGR operating temperatures was examined. In addition the high temperature mobility of palladium silicides within polycrystalline SiC was investigated. The results indicated corrosion of the SiC by Pd in all cases studied. The corrosion leads to the formation of palladium silicides within the SiC, with the predominant phase found being Pd{sub 2}Si. Evidence for the preferential corrosion and penetration of Pd along grain boundaries in polycrystalline SiC was found. The penetration and transport, without significant corrosion, of palladium silicides into polycrystalline SiC along grain boundaries was also observed. Implications of the findings with reference to the use of Tri Isotropic particles in HTGRs will be discussed.

  10. Effect of TiO2 addition on reaction between SiC and Ni in SiC-Ni cermet spray coatings. Part 2. ; Development of SiC-based cermet spray coatings. SiC-Ni yosha himakuchu no SiC-Ni kaimen hanno ni oyobosu TiO2 tenka no koka. 2. ; SiC-ki sametto yosha himaku no kaihatsu

    Energy Technology Data Exchange (ETDEWEB)

    Nakamura, T [Kumano Technical College, Mie (Japan); Oki, S; Goda, S [Kinki Univ., Higashi-Osaka, Osaka (Japan). Faculty of Science and Technology

    1992-09-30

    The depression of the reaction between SiC and Ni, by adding TiO2 powder in spraying powder which has caused uniform dispersion in spray coating and reduction of TiO2 by the reaction during spraying, was studied. The mass ratio of the mixed components has been, SiC:Ni:TiO2=3:2:1. The spray coating was examined by electron prove microanalysis as well as X-ray diffractometry, centering mainly to the SiC-metal interface reaction. The formation of Ni-Si compounds have been depressed by the addition of TiO2 to spraying powder and by using plasma gas containing H2. Reason for this has been that the TiC formed in the SiC-Ni interface has depressed the reaction at the SiC-Ni interface. Further, TiO2 is reduced during spraying, and TiC is thought to be formed by the reaction between Ti and SiC or reaction between TiO2 and SiC. 8 refs., 6 figs., 1 tab.

  11. Nitric acid oxidation of Si (NAOS) method for low temperature fabrication of SiO{sub 2}/Si and SiO{sub 2}/SiC structures

    Energy Technology Data Exchange (ETDEWEB)

    Kobayashi, H., E-mail: koba771@ybb.ne.jp [Institute of Scientific and Industrial Research, Osaka University, and CREST, Japan Science and Technology Agency, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047 (Japan); Imamura, K.; Kim, W.-B.; Im, S.-S.; Asuha [Institute of Scientific and Industrial Research, Osaka University, and CREST, Japan Science and Technology Agency, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047 (Japan)

    2010-07-15

    We have developed low temperature formation methods of SiO{sub 2}/Si and SiO{sub 2}/SiC structures by use of nitric acid, i.e., nitric acid oxidation of Si (or SiC) (NAOS) methods. By use of the azeotropic NAOS method (i.e., immersion in 68 wt% HNO{sub 3} aqueous solutions at 120 deg. C), an ultrathin (i.e., 1.3-1.4 nm) SiO{sub 2} layer with a low leakage current density can be formed on Si. The leakage current density can be further decreased by post-metallization anneal (PMA) at 200 deg. C in hydrogen atmosphere, and consequently the leakage current density at the gate bias voltage of 1 V becomes 1/4-1/20 of that of an ultrathin (i.e., 1.5 nm) thermal oxide layer usually formed at temperatures between 800 and 900 deg. C. The low leakage current density is attributable to (i) low interface state density, (ii) low SiO{sub 2} gap-state density, and (iii) high band discontinuity energy at the SiO{sub 2}/Si interface arising from the high atomic density of the NAOS SiO{sub 2} layer. For the formation of a relatively thick (i.e., {>=}10 nm) SiO{sub 2} layer, we have developed the two-step NAOS method in which the initial and subsequent oxidation is performed by immersion in {approx}40 wt% HNO{sub 3} and azeotropic HNO{sub 3} aqueous solutions, respectively. In this case, the SiO{sub 2} formation rate does not depend on the Si surface orientation. Using the two-step NAOS method, a uniform thickness SiO{sub 2} layer can be formed even on the rough surface of poly-crystalline Si thin films. The atomic density of the two-step NAOS SiO{sub 2} layer is slightly higher than that for thermal oxide. When PMA at 250 deg. C in hydrogen is performed on the two-step NAOS SiO{sub 2} layer, the current-voltage and capacitance-voltage characteristics become as good as those for thermal oxide formed at 900 deg. C. A relatively thick (i.e., {>=}10 nm) SiO{sub 2} layer can also be formed on SiC at 120 deg. C by use of the two-step NAOS method. With no treatment before the NAOS method

  12. Characterization and formation of NV centers in 3 C , 4 H , and 6 H SiC: An ab initio study

    Science.gov (United States)

    Csóré, A.; von Bardeleben, H. J.; Cantin, J. L.; Gali, A.

    2017-08-01

    Fluorescent paramagnetic defects in solids have become attractive systems for quantum information processing in recent years. One of the leading contenders is the negatively charged nitrogen-vacancy (NV) defect in diamond with visible emission, but an alternative solution in a technologically mature host is an immediate quest for many applications in this field. It has been recently found that various polytypes of silicon carbide (SiC), that are standard semiconductors with wafer scale technology, can host a NV defect that could be an alternative qubit candidate with emission in the near infrared region. However, there is much less known about this defect than its counterpart in diamond. The inequivalent sites within a polytype and the polytype variations offer a family of NV defects. However, there is an insufficient knowledge on the magneto-optical properties of these configurations. Here we carry out density functional theory calculations, in order to characterize the numerous forms of NV defects in the most common polytypes of SiC including 3 C , 4 H , and 6 H , and we also provide new experimental data in 4 H SiC. Our calculations mediate the identification of individual NV qubits in SiC polytypes. In addition, we discuss the formation of NV defects in SiC, providing detailed ionization energies of NV defects in SiC, which reveals the critical optical excitation energies for ionizing these qubits in SiC. Our calculations unravel the challenges to produce NV defects in SiC with a desirable spin bath.

  13. Early-transition-metal ketenimine complexes. Synthesis, reactivity, and structural characterization of complexes with. eta. sup 2 (C,N)-ketenimine groups bound to the halogenobis((trimethylsilyl)cyclopentadienyl)niobium unit. X-ray structure of Nb(. eta. sup 5 -C sub 5 H sub 4 SiMe sub 3 ) sub 2 Cl(. eta. sup 2 (C,N)-PhN double bond C double bond CPh sub 2 )

    Energy Technology Data Exchange (ETDEWEB)

    Antinolo, A.; Fajardo, M.; Lopez Mardomingo, C.; Otero, A. (Univ. de Alcala de Henares (Spain)); Mourad, Y.; Mugnier, Y. (Centre National de la Recherche Scientifique, Dijon (France)); Sanz-Aparicio, J.; Fonseca, I.; Florencio, F. (CSIC, Madrid (Spain))

    1990-11-01

    The reaction of Nb({eta}{sup 5}-C{sub 5}H{sub 4}SiMe{sub 3}){sub 2}X (X = Cl, Br) with 1 equiv of various ketenimines, R{sup 1}N{double bond}C{double bond}CR{sup 2}R{sup 3}, leads to the niobium derivatives Nb({eta}{sup 5}-C{sub 5}H{sub 4}SiMe{sub 3}){sub 2}X({eta}{sup 2}(C,N)-R{sup 1}N{double bond}C{double bond}CR{sup 2}R{sup 3}) (1, X = Cl, R{sup 1} = R{sup 2} = R{sup 3} = C{sub 6}H{sub 5}; 2, X = Cl, R{sup 1} = p-CH{sub 3}-C{sub 6}H{sub 4}, R{sup 2} = R{sup 3} = C{sub 6}H{sub 5}; 3, X = Br, R{sup 1} = R{sup 2} = R{sup 3} = C{sub 6}H{sub 5}; 4, X = Br, R{sup 1} = p-CH{sub 3}-C{sub 6}H{sub 4}, R{sup 2} = R{sup 3} = C{sub 6}H{sub 5}; 5, X = Cl, R{sup 1} = R{sup 2} = C{sub 6}H{sub 5}, R{sup 3} = CH{sub 3}; 6, X = Br, R{sup 1} = R{sup 2} = C{sub 6}H{sub 5}, R{sup 3} = CH{sub 3}) with the expected ketenimine C{double bond}N bonding mode. Reduction of 1 with 1 equiv of Na/Hg gives the complex Nb({eta}{sup 5}-C{sub 5}H{sub 4}SiMe{sub 3}){sub 2}({eta}{sup 2}(C,N)-PhN{double bond}C{double bond}CPh{sub 2}) (9) as a paramagnetic compound. The reduction of 9 with 1 equiv of Na/Hg and the subsequent addition of a proton source (ethanol) leads to the iminoacyl compound Nb({eta}{sup 5}-C{sub 5}H{sub 4}SiMe{sub 3}){sub 2}(CRNR{sup 1}) (10, R = CH(Ph{sub 2}), R{sup 1} = Ph). The one- and two-electron reductions of 1 have been studied by cyclic voltammetry experiments. The structure of 1 was determined by single-crystal X-ray diffractometry: a = 24.4904 (14) {angstrom}, b = 11.0435 (04) {angstrom}, c = 26.6130 (15) {angstrom}, {beta} = 109.890 (5){degree}, monoclinic, space group C2/c, Z = 8, V = 6,768.4 (5) {angstrom}{sup 3}, {rho}{sub calcd} = 1.3194 g/mL, R = 0.048, R{sub w} = 0.060 based on 4,806 observed reflections. The structure contains a niobium atom bonded to two cyclopentadienyl rings in a {eta}{sup 5} fashion; the coordination of the metal is completed by a Cl atom and a {eta}{sup 2}(C,N)-bonded ketenimine ligand.

  14. C/SiC/MoSi2-Si multilayer coatings for carbon/carbon composites for protection against oxidation

    International Nuclear Information System (INIS)

    Zhang Yulei; Li Hejun; Qiang Xinfa; Li Kezhi; Zhang Shouyang

    2011-01-01

    Highlights: → A C/SiC/MoSi 2 -Si multilayer coating was prepared on C/C by slurry and pack cementation. → Multilayer coating can protect C/C for 300 h at 1873 K or 103 h at 1873 K in air. → The penetration cracks in the coating result in the weight loss of the coated C/C. → The fracture of the coated C/C in wind tunnel result from the excessive local stress. - Abstract: To improve the oxidation resistance of carbon/carbon (C/C) composites, a C/SiC/MoSi 2 -Si multilayer oxidation protective coating was prepared by slurry and pack cementation. The microstructure of the as-prepared coating was characterized by scanning electron microscopy, X-ray diffraction and energy dispersive spectroscopy. The isothermal oxidation and erosion resistance of the coating was investigated in electrical furnace and high temperature wind tunnel. The results showed that the multilayer coating could effectively protect C/C composites from oxidation in air for 300 h at 1773 K and 103 h at 1873 K, and the coated samples was fractured after erosion for 27 h at 1873 K h in wind tunnel. The weight loss of the coated specimens was considered to be caused by the formation of penetration cracks in the coating. The fracture of the coated C/C composites might result from the excessive local stress in the coating.

  15. Determination of the bonding of alkyl monolayers to the Si(111) surface using chemical-shift, scanned-energy photoelectron diffraction

    Energy Technology Data Exchange (ETDEWEB)

    Terry, J.; Linford, M.R.; Wigren, C.; Cao, R.; Pianetta, P.; Chidsey, C.E. [Stanford University, Stanford, California 94309 (United States)

    1997-08-01

    The bonding of alkyl monolayers to Si(111) surfaces has been studied by conventional x-ray photoelectron spectroscopy (XPS) and chemical-shift, scanned-energy photoelectron diffraction (PED) using synchrotron radiation. Two very different wet-chemical methods have been used to prepare the alkyl monolayers: (i) olefin insertion into the H{endash}Si bond on the H{endash}Si(111) surface, and (ii) replacement of Cl on the Cl{endash}Si(111) surface by an alkyl group from an alkyllithium reagent. In both cases, XPS has revealed a C 1s signal chemically shifted to lower binding energy, which we have assigned to carbon bonded to silicon. PED has shown that both preparative methods result in carbon bonded in an atop site with the expected C{endash}Si bond length of 1.85{plus_minus}0.05{Angstrom}. Chemical-shift, scanned-energy photoelectron diffraction is a particularly valuable probe of local structure at surfaces that contain the same element in multiple, chemically distinct environments. {copyright} {ital 1997 American Institute of Physics.}

  16. Determination of the bonding of alkyl monolayers to the Si(111) surface using chemical-shift, scanned-energy photoelectron diffraction

    International Nuclear Information System (INIS)

    Terry, J.; Linford, M.R.; Wigren, C.; Cao, R.; Pianetta, P.; Chidsey, C.E.

    1997-01-01

    The bonding of alkyl monolayers to Si(111) surfaces has been studied by conventional x-ray photoelectron spectroscopy (XPS) and chemical-shift, scanned-energy photoelectron diffraction (PED) using synchrotron radiation. Two very different wet-chemical methods have been used to prepare the alkyl monolayers: (i) olefin insertion into the H endash Si bond on the H endash Si(111) surface, and (ii) replacement of Cl on the Cl endash Si(111) surface by an alkyl group from an alkyllithium reagent. In both cases, XPS has revealed a C 1s signal chemically shifted to lower binding energy, which we have assigned to carbon bonded to silicon. PED has shown that both preparative methods result in carbon bonded in an atop site with the expected C endash Si bond length of 1.85±0.05 Angstrom. Chemical-shift, scanned-energy photoelectron diffraction is a particularly valuable probe of local structure at surfaces that contain the same element in multiple, chemically distinct environments. copyright 1997 American Institute of Physics

  17. Synthesis of 1,2,4-Triazoles via Oxidative Heterocyclization: Selective C-N Bond Over C-S Bond Formation.

    Science.gov (United States)

    Gogoi, Anupal; Guin, Srimanta; Rajamanickam, Suresh; Rout, Saroj Kumar; Patel, Bhisma K

    2015-09-18

    The higher propensity of C-N over C-S bond forming ability was demonstrated, through formal C-H functionalization during the construction of 4,5-disubstituted 1,2,4-triazole-3-thiones from arylidenearylthiosemicarbazides catalyzed by Cu(II). However, steric factors imparted by the o-disubstituted substrates tend to change the reaction path giving thiodiazole as the major or an exclusive product. Upon prolonging the reaction time, the in situ generated thiones are transformed to 4,5-disubstituted 1,2,4-triazoles via a desulfurization process. Two classes of heterocycles viz. 4,5-disubstituted 1,2,4-triazole-3-thiones and 4,5-disubstituted 1,2,4-triazoles can be synthesized from arylidenearylthiosemicarbazides by simply adjusting the reaction time. Desulfurization of 1,2,4-triazole-3-thiones is assisted by thiophilic Cu to provide 1,2,4-triazoles with concomitant formation of CuS and polynuclear sulfur anions as confirmed from scanning electron microscope and energy dispersive X-ray spectroscopy measurements. A one-pot synthesis of an antimicrobial compound has been successfully achieved following this strategy.

  18. Formation of Si{sup 1+} in the early stages of the oxidation of the Si[001] 2 × 1 surface

    Energy Technology Data Exchange (ETDEWEB)

    Herrera-Gomez, Alberto, E-mail: aherrerag@cinvestav.mx [CINVESTAV-Unidad Queretaro, Queretaro 76230 (Mexico); Aguirre-Tostado, Francisco-Servando [Centro de Investigación en Materiales Avanzados, Monterrey, Nuevo Leon, 66600 (Mexico); Pianetta, Piero [SLAC National Accelerator Center, Menlo Park, California 94025 (United States)

    2016-03-15

    The early stages of the oxidation of the Si[001] 2 × 1 surface were studied with synchrotron radiation photoelectron spectroscopy. The analysis was based on the block approach, which is a refinement of spectra-subtraction that accounts for changes on the background signal and for band-bending shifts. By this method, it was possible to robustly show that the formation of Si{sup 1+} is due to oxygen bonding to the upper dimer atoms. Our results contrast with ab initio calculation, which indicates that the most favorable bonding site is the back-bond of the down-dimer.

  19. Joining of SiC/SiCf ceramic matrix composites for fusion reactor blanket applications

    International Nuclear Information System (INIS)

    Colombo, P.; Riccardi, B.; Donato, A.; Scarinci, G.

    2000-01-01

    Using a preceramic polymer, joints between SiC/SiC f ceramic matrix composites were obtained. The polymer, upon pyrolysis at high temperature, transforms into a ceramic material and develops an adhesive bonding with the composite. The surface morphology of 2D and 3D SiC/SiC f composites did not allow satisfactory results to be obtained by a simple application of the method initially developed for monolithic SiC bodies, which employed the use of a pure silicone resin. Thus, active or inert fillers were mixed with the preceramic polymer, in order to reduce its volumetric shrinkage which occurs during pyrolysis. In particular, the joints realized using the silicone resin with Al-Si powder as reactive additive displayed remarkable shear strength (31.6 MPa maximum). Large standard deviation for the shear strength has nevertheless been measured. The proposed joining method is promising for the realization of fusion reactor blanket structures, even if presently the measured strength values are not fully satisfactory

  20. Fabrication of All-SiC Fiber-Optic Pressure Sensors for High-Temperature Applications.

    Science.gov (United States)

    Jiang, Yonggang; Li, Jian; Zhou, Zhiwen; Jiang, Xinggang; Zhang, Deyuan

    2016-10-17

    Single-crystal silicon carbide (SiC)-based pressure sensors can be used in harsh environments, as they exhibit stable mechanical and electrical properties at elevated temperatures. A fiber-optic pressure sensor with an all-SiC sensor head was fabricated and is herein proposed. SiC sensor diaphragms were fabricated via an ultrasonic vibration mill-grinding (UVMG) method, which resulted in a small grinding force and low surface roughness. The sensor head was formed by hermetically bonding two layers of SiC using a nickel diffusion bonding method. The pressure sensor illustrated a good linearity in the range of 0.1-0.9 MPa, with a resolution of 0.27% F.S. (full scale) at room temperature.

  1. C-H and C-C activation of n -butane with zirconium hydrides supported on SBA15 containing N-donor ligands: [(≡SiNH-)(≡SiX-)ZrH2], [(≡SiNH-)(≡SiX-)2ZrH], and[(≡SiN=)(≡SiX-)ZrH] (X = -NH-, -O-). A DFT study

    KAUST Repository

    Pasha, Farhan Ahmad

    2014-07-01

    Density functional theory (DFT) was used to elucidate the mechanism of n-butane hydrogenolysis (into propane, ethane, and methane) on well-defined zirconium hydrides supported on SBA15 coordinated to the surface via N-donor surface pincer ligands: [(≡SiNH-)(≡SiO-)ZrH2] (A), [(≡SiNH-)2ZrH2] (B), [(≡SiNH-)(≡SiO-) 2ZrH] (C), [(≡SiNH-)2(≡SiO-)ZrH] (D), [(≡SiN=)(≡Si-O-)ZrH] (E), and [(≡SiN=)(≡SiNH-)ZrH] (F). The roles of these hydrides have been investigated in C-H/C-C bond activation and cleavage. The dihydride A linked via a chelating [N,O] surface ligand was found to be more active than B, linked to the chelating [N,N] surface ligand. Moreover, the dihydride zirconium complexes are also more active than their corresponding monohydrides C-F. The C-C cleavage step occurs preferentially via β-alkyl transfer, which is the rate-limiting step in the alkane hydrogenolysis. The energetics of the comparative pathways over the potential energy surface diagram (PES) reveals the hydrogenolysis of n-butane into propane and ethane. © 2014 American Chemical Society.

  2. Electrochemical characteristics of nc-Si/SiC composite for anode electrode of lithium ion batteries

    International Nuclear Information System (INIS)

    Jeon, Bup Ju; Lee, Joong Kee

    2014-01-01

    Graphical abstract: Cycling performances and coulombic efficiencies of the nc-Si/SiC composite anodes at different CH 4 /SiH 4 mole ratios. -- Highlights: • Our work has focused on irreversible discharge capacity and capacity retention of nc-Si/SiC composite particles. • Particles comprised a mixed construction of nc-Si/SiC structure with dual phases. • The SiC phase acted as retarding media, leading to enhanced cycle stability. -- Abstract: nc-Si/SiC composite particles were prepared as an anode material for lithium ion batteries using a plasma jet with DC arc discharge. The composition of the nc-Si/SiC composite particles was controlled by setting the mole ratio of CH 4 and SiH 4 precursor gases. X-ray diffraction, TEM images, and Raman shift analyses revealed that the synthesized nc-Si/SiC composite particles comprised a construction of nano-nocaled structure with crystalline phases of active silicon, highly disordered amorphous carbon of graphite and crystalline phases of β-SiC. In the experimental range examined, the nc-Si/SiC composite particles showed good coulombic efficiency in comparison with particles high Si–Si bonding content due to the interplay of particles with a small proportion of carbon and the buffering effect against volume expansion by structural stabilization, and played a role as retarding media for the rapid electrochemical reactions of the SiC crystal against lithium

  3. Electrochemical characteristics of nc-Si/SiC composite for anode electrode of lithium ion batteries

    Energy Technology Data Exchange (ETDEWEB)

    Jeon, Bup Ju [Department of Energy Resources, Shinhan University, 233-1, Sangpae-dong, Dongducheon, Gyeonggi-do, 483-777 (Korea, Republic of); Lee, Joong Kee, E-mail: leejk@kist.re.kr [Advanced Energy Materials Processing Laboratory, Center for Energy Convergence Research, Green City Technology Institute, Korea Institute of Science and Technology, Hwarangno 14-gil 5, Seongbuk-gu, Seoul 136-791 (Korea, Republic of)

    2014-03-25

    Graphical abstract: Cycling performances and coulombic efficiencies of the nc-Si/SiC composite anodes at different CH{sub 4}/SiH{sub 4} mole ratios. -- Highlights: • Our work has focused on irreversible discharge capacity and capacity retention of nc-Si/SiC composite particles. • Particles comprised a mixed construction of nc-Si/SiC structure with dual phases. • The SiC phase acted as retarding media, leading to enhanced cycle stability. -- Abstract: nc-Si/SiC composite particles were prepared as an anode material for lithium ion batteries using a plasma jet with DC arc discharge. The composition of the nc-Si/SiC composite particles was controlled by setting the mole ratio of CH{sub 4} and SiH{sub 4} precursor gases. X-ray diffraction, TEM images, and Raman shift analyses revealed that the synthesized nc-Si/SiC composite particles comprised a construction of nano-nocaled structure with crystalline phases of active silicon, highly disordered amorphous carbon of graphite and crystalline phases of β-SiC. In the experimental range examined, the nc-Si/SiC composite particles showed good coulombic efficiency in comparison with particles high Si–Si bonding content due to the interplay of particles with a small proportion of carbon and the buffering effect against volume expansion by structural stabilization, and played a role as retarding media for the rapid electrochemical reactions of the SiC crystal against lithium.

  4. Intermolecular Formation of Two C−C Bonds across Olefins Enabled by Boron-Based Relay Strategies

    Czech Academy of Sciences Publication Activity Database

    Hidasová, Denisa; Jahn, Ullrich

    2017-01-01

    Roč. 56, č. 33 (2017), s. 9656-9658 ISSN 1433-7851 Institutional support: RVO:61388963 Keywords : 1,2- metal ate rearrangement * C−C bond formation * radical reactions * transition metal catalysis * vinyl boronates Subject RIV: CC - Organic Chemistry OBOR OECD: Organic chemistry Impact factor: 11.994, year: 2016

  5. Origin of the high p-doping in F intercalated graphene on SiC

    KAUST Repository

    Cheng, Yingchun

    2011-08-04

    The atomic and electronic structures of F intercalated epitaxialgraphene on a SiC(0001) substrate are studied by first-principles calculations. A three-step fluorination process is proposed. First, F atoms are intercalated between the graphene and the SiC, which restores the Dirac point in the band structure. Second, saturation of the topmost Si dangling bonds introduces p-doping up to 0.37 eV. Third, F atoms bond covalently to the graphene to enhance the p-doping. Our model explains the highly p-doped state of graphene on SiC after fluorination [A. L. Walter et al., Appl. Phys. Lett. 98, 184102 (2011)].

  6. A Novel Method for Incorporation of Micron-Sized SiC Particles into Molten Pure Aluminum Utilizing a Co Coating

    Science.gov (United States)

    Mohammadpour, M.; Khosroshahi, R. Azari; Mousavian, R. Taherzadeh; Brabazon, D.

    2015-02-01

    Ceramic particles typically do not have sufficiently high wettability by molten metal for effective bonding during metal matrix composite fabrication. In this study, a novel method has been used to overcome this drawback. Micron-sized SiC particles were coated by a cobalt metallic layer using an electroless deposition method. A layer of cobalt on the SiC particles was produced prior to incorporation in molten pure aluminum in order to improve the injected particle bonding with the matrix. For comparison, magnesium was added to the melt in separate experiments as a wetting agent to assess which method was more effective for particle incorporation. It was found that both of these methods were more effective as regard ceramic particulate incorporation compared with samples produced with as-received SiC particles injected into the pure aluminum matrix. SEM images indicated that cobalt coating of the particles was more effective than magnesium for incorporation of fine SiC particles (below 30 µm), while totally the incorporation percentage of the particles was higher for a sample in which Mg was added as a wetting agent. In addition, microhardness tests revealed that the cobalt coating leads to the fabrication of a harder composite due to increased amount of ceramic incorporation, ceramic-matrix bonding, and possibly also to formation of Al-Co intermetallic phases.

  7. Bonding Characteristics and Chemical Inertness of Zr–Si–N Coatings with a High Si Content in Glass Molding

    Directory of Open Access Journals (Sweden)

    Li-Chun Chang

    2018-05-01

    Full Text Available High-Si-content transition metal nitride coatings, which exhibited an X-ray amorphous phase, were proposed as protective coatings on glass molding dies. In a previous study, the Zr–Si–N coatings with Si contents of 24–30 at.% exhibited the hardness of Si3N4, which was higher than those of the middle-Si-content (19 at.% coatings. In this study, the bonding characteristics of the constituent elements of Zr–Si–N coatings were evaluated through X-ray photoelectron spectroscopy. Results indicated that the Zr 3d5/2 levels were 179.14–180.22 and 180.75–181.61 eV for the Zr–N bonds in ZrN and Zr3N4 compounds, respectively. Moreover, the percentage of Zr–N bond in the Zr3N4 compound increased with increasing Si content in the Zr–Si–N coatings. The Zr–N bond of Zr3N4 dominated when the Si content was >24 at.%. Therefore, high Si content can stabilize the Zr–N compound in the M3N4 bonding structure. Furthermore, the thermal stability and chemical inertness of Zr–Si–N coatings were evaluated by conducting thermal cycle annealing at 270 °C and 600 °C in a 15-ppm O2–N2 atmosphere. The results indicated that a Zr22Si29N49/Ti/WC assembly was suitable as a protective coating against SiO2–B2O3–BaO-based glass for 450 thermal cycles.

  8. Environmental Barrier Coating Development for SiC/SiC Ceramic Matrix Composites: Recent Advances and Future Directions

    Science.gov (United States)

    Zhu, Dongming

    2016-01-01

    This presentation briefly reviews the SiC/SiC major environmental and environment-fatigue degradations encountered in simulated turbine combustion environments, and thus NASA environmental barrier coating system evolution for protecting the SiC/SiC Ceramic Matrix Composites for meeting the engine performance requirements. The presentation will review several generations of NASA EBC materials systems, EBC-CMC component system technologies for SiC/SiC ceramic matrix composite combustors and turbine airfoils, highlighting the temperature capability and durability improvements in simulated engine high heat flux, high pressure, high velocity, and with mechanical creep and fatigue loading conditions. This paper will also focus on the performance requirements and design considerations of environmental barrier coatings for next generation turbine engine applications. The current development emphasis is placed on advanced NASA candidate environmental barrier coating systems for SiC/SiC CMCs, their performance benefits and design limitations in long-term operation and combustion environments. The efforts have been also directed to developing prime-reliant, self-healing 2700F EBC bond coat; and high stability, lower thermal conductivity, and durable EBC top coats. Major technical barriers in developing environmental barrier coating systems, the coating integrations with next generation CMCs having the improved environmental stability, erosion-impact resistance, and long-term fatigue-environment system durability performance will be described. The research and development opportunities for turbine engine environmental barrier coating systems by utilizing improved compositions, state-of-the-art processing methods, and simulated environment testing and durability modeling will be briefly discussed.

  9. Effect of Pre-Oxidation Treatment of Nano-SiC Particulates on Microstructure and Mechanical Properties of SiC/Mg-8Al-1Sn Composites Fabricated by Powder Metallurgy Combined with Hot Extrusion.

    Science.gov (United States)

    Li, Chuan-Peng; Wang, Zhi-Guo; Zha, Min; Wang, Cheng; Yu, Hong-Chen; Wang, Hui-Yuan; Jiang, Qi-Chuan

    2016-11-26

    Nano-SiC particulates (n-SiC p ) reinforced Mg-8Al-1Sn (AT81) composites with different pre-oxidation parameters were fabricated by powder metallurgy (P/M) process combined with hot extrusion. The effects of pre-oxidization treatment of n-SiC p on the microstructure and tensile properties of 0.5 vol % n-SiC p /AT81 composites were investigated accordingly. The distribution of n-SiC p with different pre-oxidation parameters was homogeneous in the composites. Moreover, it was found that a thin MgAl₂O₄ layer formed at the interface when the n-SiC p were pre-oxidized at 1073 K for 2 h, while the MgAl₂O₄ layer became much thicker with pre-oxidization temperature increasing to 1273 K for 2 h. After an appropriate pre-oxidization treatment of n-SiC p at 1073 K for 2 h, the as-extruded 0.5 vol % n-SiC p /AT81 composites exhibited an enhanced strength. It was found that the yield strength (YS) and ultimate tensile strength (UTS) increased from 168 MPa and 311 MPa to 255 MPa and 393 MPa compared with the as-extruded AT81 alloy, reflecting 51.8% and 26.4% increments, respectively. The improvement of mechanical properties should be mainly attributed to the grain refinement and homogeneous distribution of n-SiC p in the composites. Moreover, a well-bonded interface and the formation of an appropriate amount of interfacial product (MgAl₂O₄) benefited the material's mechanical properties.

  10. Application of SiC masses as tube liners in municipal incinerators. Anwendung von SiC-Massen fuer Rohrverkleidungen in kommunalen Muellverbrennungsanlagen

    Energy Technology Data Exchange (ETDEWEB)

    Jeon, In Soo.

    1993-09-02

    Phosphate-bonded SiC masses with different additives were investigated. The reference mass was a SiC mass consisting of 90% by mass of SiC and 10% by mass of Al[sub 2]O[sub 3]. The reactive alumina ([alpha]-Al[sub 2]O[sub 3]) served as reaction partner for the aluminium phosphate binder. The physical and thermomechanical properties as well as the corrosion resistance of the developed SiC masses were investigated, and the reactions of the additives with the aluminium phosphate binder were investigated. The best combination of properties required of a refractory liner for waste incinerators was found in masses with Si[sub 3]N[sub 4] additives. These masses have optimal physical and thermomechanical properties and a high resistance to the corrosive gases and alkaline slags produced in modern incinerators. (orig./EF)

  11. Optimization of Si–C reaction temperature and Ge thickness in C-mediated Ge dot formation

    Energy Technology Data Exchange (ETDEWEB)

    Satoh, Yuhki, E-mail: yu-ki@ecei.tohoku.ac.jp; Itoh, Yuhki; Kawashima, Tomoyuki; Washio, Katsuyoshi

    2016-03-01

    To form Ge dots on a Si substrate, the effect of thermal reaction temperature of sub-monolayer C with Si (100) was investigated and the deposited Ge thickness was optimized. The samples were prepared by solid-source molecular beam epitaxy with an electron-beam gun for C sublimation and a Knudsen cell for Ge evaporation. C of 0.25 ML was deposited on Si (100) at a substrate temperature of 200 °C, followed by a high-temperature treatment at the reaction temperature (T{sub R}) of 650–1000 °C to create Si–C bonds. Ge equivalent to 2 to 5 nm thick was subsequently deposited at 550 °C. Small and dense dots were obtained for T{sub R} = 750 °C but the dot density decreased and the dot diameter varied widely in the case of lower and higher T{sub R}. A dot density of about 2 × 10{sup 10} cm{sup −2} was achieved for Ge deposition equivalent to 3 to 5 nm thick and a standard deviation of dot diameter was the lowest of 10 nm for 5 nm thick Ge. These results mean that C-mediated Ge dot formation was strongly influenced not only by the c(4 × 4) reconstruction condition through the Si–C reaction but also the relationship between the Ge deposition thickness and the exposed Si (100)-(2 × 1) surface area. - Highlights: • The effect of Si–C reaction temperature on Ge dot formation was investigated. • Small and dense dots were obtained for T{sub R} = 750 °C. • The dot density of about 2 × 10{sup 10} cm{sup −2} was achieved for Ge = 3 to 5 nm. • The standard deviation of dot diameter was the lowest of 10 nm at Ge = 5 nm.

  12. Fabrication of All-SiC Fiber-Optic Pressure Sensors for High-Temperature Applications

    Directory of Open Access Journals (Sweden)

    Yonggang Jiang

    2016-10-01

    Full Text Available Single-crystal silicon carbide (SiC-based pressure sensors can be used in harsh environments, as they exhibit stable mechanical and electrical properties at elevated temperatures. A fiber-optic pressure sensor with an all-SiC sensor head was fabricated and is herein proposed. SiC sensor diaphragms were fabricated via an ultrasonic vibration mill-grinding (UVMG method, which resulted in a small grinding force and low surface roughness. The sensor head was formed by hermetically bonding two layers of SiC using a nickel diffusion bonding method. The pressure sensor illustrated a good linearity in the range of 0.1–0.9 MPa, with a resolution of 0.27% F.S. (full scale at room temperature.

  13. Fabrication of laminated ZrC-SiC composite by vacuum hot-pressing sintering

    Directory of Open Access Journals (Sweden)

    Yuanyuan Li

    2015-03-01

    Full Text Available Laminated ZrC-SiC ceramic was prepared through tape casting and hot pressing. The green tapes of ZrC and SiC were prepared at room temperature. In order to improve the density of composite, the binder of green tapes were removed at 550 °C for 1 h. The laminated structure and the cracks propagation path, which is not a straight line, are observed by optical metalloscope. The compact laminated ZrC-SiC composite sintered by vacuum hot-pressing at 1650 °C for 90 min under pressure of 20 MPa was researched by X-ray diffraction and scanning electron microscopy (SEM equipped with energy dispersive X-ray analysis. The results showed that interlayer bonding is tight, and no disordered phase has formed in the interlayers of ZrC or SiC, and the combination mode is physical mechanism.

  14. Evolution of the structure and hydrogen bonding configuration in annealed hydrogenated a-Si/a-Ge multilayers and layers

    International Nuclear Information System (INIS)

    Frigeri, C.; Nasi, L.; Serenyi, M.; Khanh, N.Q.; Csik, A.; Szekrenyes, Zs.; Kamaras, K.

    2012-01-01

    Complete text of publication follows. Among the present available renewable energy sources, energy harvesting from sunlight by means of photovoltaic cells is the most attractive one. In order to win over the traditional energy resources both efficiency and cost effectiveness of photovoltaic conversion must be optimized as far as possible. Efficiency is basically improved by the use of multijunction cells containing semiconductors with different band-gap. In this respect, the III-V compounds guarantee the highest efficiency, up to 41.6 %, but they are quite expensive. The latter drawback also affects other compounds like CdTe and CuIn 1-x Ga x Se 2 (CIGS). Si based solar devices have lower efficiency but are much more cost effective. They can use either crystalline or amorphous Si thin layers or Si nanoparticles. As to the thin films, amorphous Si (a-Si) is preferred to crystalline Si as it has a wider band-gap (1.7 instead of 1.1 eV) thus harvesting a larger portion of solar energy. A tandem cell is formed by using a-SiGe which has a smaller band-gap tunable between 1.1 and 1.7 eV depending on the Ge content. The best value should be 1.4 eV since the material properties seem to degrade below this value whilst the photo-conductivity drops after light soaking if the band gap exceeds 1.4 eV. A key issue of amorphous Si, Ge and SiGe is the high density of defects in the band-gap mostly due to dangling bonds whose density is particularly high (even up to 5 x10 19 cm -3 ) since the lattice is significantly disordered with distorted bond angles and lengths. This increases the probability of rupture of the Si-Si (Ge-Ge) bonds, i.e., formation of dangling bonds. Owing to the fact that hydrogen with its single electron structure can close the dangling bonds, their density can be reduced even by 4 orders of magnitude by doping with hydrogen. However, H is unstable in the host lattice. In fact, several findings showed its evolution from the thin layer upon annealing and that

  15. Inhibition of quantum size effects from surface dangling bonds: The first principles study on different morphology SiC nanowires

    Science.gov (United States)

    Li, Yan-Jing; Li, Shu-Long; Gong, Pei; Li, Ya-Lin; Fang, Xiao-Yong; Jia, Ya-Hui; Cao, Mao-Sheng

    2018-06-01

    In recent years, we investigated the structure and photoelectric properties of Silicon carbide nanowires (SiCNWs) with different morphologies and sizes by using the first-principle in density functional theory, and found a phenomenon that is opposite to quantum size effect, namely, the band gap of nanowires increases with the increase of the diameter. To reveal the nature of this phenomenon, we further carry out the passivation of SiCNWs. The results show that the hydrogenated SiCNWs are direct band gap semiconductors, and the band gap decreases with the diameter increasing, which indicates the dangling bonds of the SiCNWs suppress its quantum size effect. The optical properties of SiCNWs with different diameters before and after hydrogenated are compared, we found that these surface dangling bonds lead to spectral shift which is different with quantum size effect of SiCNWs. These results have potential scientific value to deepen the understanding of the photoelectric properties of SiCNWs and to promote the development of optoelectronic devices.

  16. Effect of hydrogen flow on growth of 3C-SiC heteroepitaxial layers on Si(111) substrates

    International Nuclear Information System (INIS)

    Yan, Guoguo; Zhang, Feng; Niu, Yingxi; Yang, Fei; Liu, Xingfang; Wang, Lei; Zhao, Wanshun; Sun, Guosheng; Zeng, Yiping

    2015-01-01

    Highlights: • 3C-SiC thin films of preferential orientation along with Si(111) substrates were obtained using home-made horizontal LPCVD with different H_2 flow rate ranging from15 to 30 slm. • High H_2 flow rate will inhibit the out-diffusion of silicon atoms from silicon substrates effectively. Transformation and the mechanism of void formation are discussed based on our model. • The variation of growth rate and n-type doping with increasing H_2 flow rate is researched and the influencing mechanism is discussed. - Abstract: 3C-SiC thin films were grown on Si(111) substrates at 1250 °C by horizontal low pressure chemical vapor deposition (LPCVD). We performed an exhaustive study on the effect of H_2 flow rate on the crystalline quality, surface morphologies, growth rate, n-type doping of 3C-SiC thin films and the voids at the interface. The films show epitaxial nature with high crystal quality and surface morphology increase obviously with increasing H_2 flow rate. The growth rate and n-type doping are also dependent on H_2 flow rate. The properties of the voids at the interface are discussed based on the cross-sectional scanning electron microscope characterization. Transformation of voids with increasing H_2 flow rate are attributed to higher 3C-SiC film growth rate and H_2 etching rate. The mechanism of void formation is discussed based on our model, too. The results demonstrate that H_2 flow rate plays a very important role in the heteroepitaxial growth of 3C-SiC films.

  17. Effect of hydrogen flow on growth of 3C-SiC heteroepitaxial layers on Si(111) substrates

    Energy Technology Data Exchange (ETDEWEB)

    Yan, Guoguo [Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); Zhang, Feng, E-mail: fzhang@semi.ac.cn [Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); Niu, Yingxi; Yang, Fei [Electrical Engineering New Materials and Microelectronics Department, State Grid Smart Grid Research Institute, Beijing 100192 (China); Liu, Xingfang; Wang, Lei; Zhao, Wanshun [Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); Sun, Guosheng [Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); Dongguan Tianyu Semiconductor, Inc., Dongguan 523000 (China); Zeng, Yiping [Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

    2015-10-30

    Highlights: • 3C-SiC thin films of preferential orientation along with Si(111) substrates were obtained using home-made horizontal LPCVD with different H{sub 2} flow rate ranging from15 to 30 slm. • High H{sub 2} flow rate will inhibit the out-diffusion of silicon atoms from silicon substrates effectively. Transformation and the mechanism of void formation are discussed based on our model. • The variation of growth rate and n-type doping with increasing H{sub 2} flow rate is researched and the influencing mechanism is discussed. - Abstract: 3C-SiC thin films were grown on Si(111) substrates at 1250 °C by horizontal low pressure chemical vapor deposition (LPCVD). We performed an exhaustive study on the effect of H{sub 2} flow rate on the crystalline quality, surface morphologies, growth rate, n-type doping of 3C-SiC thin films and the voids at the interface. The films show epitaxial nature with high crystal quality and surface morphology increase obviously with increasing H{sub 2} flow rate. The growth rate and n-type doping are also dependent on H{sub 2} flow rate. The properties of the voids at the interface are discussed based on the cross-sectional scanning electron microscope characterization. Transformation of voids with increasing H{sub 2} flow rate are attributed to higher 3C-SiC film growth rate and H{sub 2} etching rate. The mechanism of void formation is discussed based on our model, too. The results demonstrate that H{sub 2} flow rate plays a very important role in the heteroepitaxial growth of 3C-SiC films.

  18. Microstructure and mechanical properties of joints in sintered SiC fiber-bonded ceramics brazed with Ag-Cu-Ti alloy

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Mrityunjay [Ohio Aerospace Institute, Cleveland, OH 44142 (United States); Matsunaga, Tadashi [R and D Division, Ube Industries, Ltd., Ube-shi, Yamaguchi 755-8633 (Japan); Lin, Hua-Tay [Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831-6068 (United States); Asthana, Rajiv, E-mail: asthanar@uwstout.edu [Department of Engineering and Technology, 326 Fryklund Hall, University of Wisconsin-Stout, Menomonie, WI 54751 (United States); Ishikawa, Toshihiro [R and D Division, Ube Industries, Ltd., Ube-shi, Yamaguchi 755-8633 (Japan)

    2012-11-15

    Active metal brazing of a new high thermal conductivity sintered SiC-polycrystalline fiber-bonded ceramic (SA-Tyrannohex{sup Registered-Sign }) has been carried out using a Ti-containing Ag-Cu active braze alloy (Cusil-ABA{sup Registered-Sign }). The brazed composite joints were characterized using scanning electron microscopy coupled with energy-dispersive X-ray spectrometry (SEM-EDS). The results show that this material can be successfully joined using judiciously selected off-the shelf active braze alloys to yield metallurgically sound joints possessing high integrity. Uniform and continuous joints were obtained irrespective of differences in the fiber orientation in the substrate material. Detailed interfacial microanalysis showed that the titanium reacts with C and Si to form TiC layer and a Ti-Si compound, respectively. Furthermore, the evaluation of shear strength of the joints was also conducted at ambient and elevated temperatures in air using the single-lap offset (SLO) shear test. The perpendicular-type SA-Tyrannohex joints exhibited apparent shear strengths of about 42 MPa and 25 MPa at 650 Degree-Sign C and 750 Degree-Sign C, respectively. The fracture at the higher temperature occurred at the interface between the reaction-formed TiC layer and braze. This might be caused by generation of stress intensity when a shear stress was applied, according to {mu}-FEA simulation results.

  19. Origin of the high p-doping in F intercalated graphene on SiC

    KAUST Repository

    Cheng, Yingchun; Kaloni, T. P.; Huang, G. S.; Schwingenschlö gl, Udo

    2011-01-01

    and the SiC, which restores the Dirac point in the band structure. Second, saturation of the topmost Si dangling bonds introduces p-doping up to 0.37 eV. Third, F atoms bond covalently to the graphene to enhance the p-doping. Our model explains the highly p

  20. Spectroscopic characterization of a single dangling bond on a bare Si(100)- c ( 4 × 2 ) surface for n - and p -type doping

    KAUST Repository

    Mantega, M.

    2012-07-19

    We investigate the charging state of an isolated single dangling bond formed on an unpassivated Si(100) surface with c(4×2) reconstruction, by comparing scanning tunneling microscopy and spectroscopy analysis with density functional theory calculations. The dangling bond is created by placing a single hydrogen atom on the bare surface with the tip of a scanning tunneling microscope. The H atom passivates one of the dimer dangling bonds responsible for the surface one-dimensional electronic structure. This leaves a second dangling at the reacted surface dimer which breaks the surface periodicity. We consider two possible H adsorption configurations for both the neutral and the doped situation (n- and p-type). In the case of n-doping we find that the single dangling bond state is doubly occupied and the most stable configuration is that with H bonded to the bottom Si atom of the surface dimer. In the case of p-doping the dangling bond is instead empty and the configuration with the H attached to the top atom of the dimer is the most stable. Importantly the two configurations have different scattering properties and phase shift fingerprints. This might open up interesting perspectives for fabricating a switching device by tuning the doping level or by locally charging the single dangling bond state. © 2012 American Physical Society.

  1. Spectroscopic characterization of a single dangling bond on a bare Si(100)- c ( 4 × 2 ) surface for n - and p -type doping

    KAUST Repository

    Mantega, M.; Rungger, I.; Naydenov, B.; Boland, J. J.; Sanvito, S.

    2012-01-01

    We investigate the charging state of an isolated single dangling bond formed on an unpassivated Si(100) surface with c(4×2) reconstruction, by comparing scanning tunneling microscopy and spectroscopy analysis with density functional theory calculations. The dangling bond is created by placing a single hydrogen atom on the bare surface with the tip of a scanning tunneling microscope. The H atom passivates one of the dimer dangling bonds responsible for the surface one-dimensional electronic structure. This leaves a second dangling at the reacted surface dimer which breaks the surface periodicity. We consider two possible H adsorption configurations for both the neutral and the doped situation (n- and p-type). In the case of n-doping we find that the single dangling bond state is doubly occupied and the most stable configuration is that with H bonded to the bottom Si atom of the surface dimer. In the case of p-doping the dangling bond is instead empty and the configuration with the H attached to the top atom of the dimer is the most stable. Importantly the two configurations have different scattering properties and phase shift fingerprints. This might open up interesting perspectives for fabricating a switching device by tuning the doping level or by locally charging the single dangling bond state. © 2012 American Physical Society.

  2. Influence of SiC coating thickness on mechanical properties of SiCf/SiC composite

    Science.gov (United States)

    Yu, Haijiao; Zhou, Xingui; Zhang, Wei; Peng, Huaxin; Zhang, Changrui

    2013-11-01

    Silicon carbide (SiC) coatings with varying thickness (ranging from 0.14 μm to 2.67 μm) were deposited onto the surfaces of Type KD-I SiC fibres with native carbonaceous surface using chemical vapour deposition (CVD) process. Then, two dimensional SiC fibre reinforced SiC matrix (2D SiCf/SiC) composites were fabricated using polymer infiltration and pyrolysis (PIP) process. Influences of the fibre coating thickness on mechanical properties of SiC fibre and SiCf/SiC composite were investigated using single-filament test and three-point bending test. The results indicated that flexural strength of the composites initially increased with the increasing CVD SiC coating thickness and reached a peak value of 363 MPa at the coating thickness of 0.34 μm. Further increase in the coating thickness led to a rapid decrease in the flexural strength of the composites. The bending modulus of composites showed a monotonic increase with increasing coating thickness. A chemical attack of hydrogen or other ions (e.g. a C-H group) on the surface of SiC fibres during the coating process, owing to the formation of volatile hydrogen, lead to an increment of the surface defects of the fibres. This was confirmed by Wang et al. [35] in their work on the SiC coating of the carbon fibre. In the present study, the existing ˜30 nm carbon on the surface of KD-I fibre [36] made the fibre easy to be attacked. Deposition of non-stoichiometric SiC, causing a decrease in strength. During the CVD process, a small amount of free silicon or carbon always existed [35]. The existence of free silicon, either disordered the structure of SiC and formed a new source of cracks or attacked the carbon on fibre surface resulting in properties degeneration of the KD-I fibre. The effect of residual stress. The different thermal expansion coefficient between KD-I SiC fibre and CVD SiC coating, which are 3 × 10-6 K-1 (RT ˜ 1000 °C) and 4.6 × 10-6 K-1 (RT ˜ 1000 °C), respectively, could cause residual stress

  3. Influence of the Sr and Mg Alloying Additions on the Bonding Between Matrix and Reinforcing Particles in the AlSi7Mg/SiC-Cg Hybrid Composite

    Directory of Open Access Journals (Sweden)

    Dolata A. J.

    2016-06-01

    Full Text Available The aim of the work was to perform adequate selection of the phase composition of the composite designated for permanent - mould casting air compressor pistons. The hybrid composites based on AlSi7Mg matrix alloy reinforced with mixture of silicon carbide (SiC and glassy carbon (Cg particles were fabricated by the stir casting method. It has been shown that the proper selection of chemical composition of matrix alloy and its modification by used magnesium and strontium additions gives possibility to obtain both the advantageous casting properties of composite suspensions as well as good bonding between particles reinforcements and matrix.

  4. Low dose irradiation performance of SiC interphase SiC/SiC composites

    International Nuclear Information System (INIS)

    Snead, L.L.; Lowden, R.A.; Strizak, J.; More, K.L.; Eatherly, W.S.; Bailey, J.; Williams, A.M.; Osborne, M.C.; Shinavski, R.J.

    1998-01-01

    Reduced oxygen Hi-Nicalon fiber reinforced composite SiC materials were densified with a chemically vapor infiltrated (CVI) silicon carbide (SiC) matrix and interphases of either 'porous' SiC or multilayer SiC and irradiated to a neutron fluence of 1.1 x 10 25 n m -2 (E>0.1 MeV) in the temperature range of 260 to 1060 C. The unirradiated properties of these composites are superior to previously studied ceramic grade Nicalon fiber reinforced/carbon interphase materials. Negligible reduction in the macroscopic matrix microcracking stress was observed after irradiation for the multilayer SiC interphase material and a slight reduction in matrix microcracking stress was observed for the composite with porous SiC interphase. The reduction in strength for the porous SiC interfacial material is greatest for the highest irradiation temperature. The ultimate fracture stress (in four point bending) following irradiation for the multilayer SiC and porous SiC interphase materials was reduced by 15% and 30%, respectively, which is an improvement over the 40% reduction suffered by irradiated ceramic grade Nicalon fiber materials fabricated in a similar fashion, though with a carbon interphase. The degradation of the mechanical properties of these composites is analyzed by comparison with the irradiation behavior of bare Hi-Nicalon fiber and Morton chemically vapor deposited (CVD) SiC. It is concluded that the degradation of these composites, as with the previous generation ceramic grade Nicalon fiber materials, is dominated by interfacial effects, though the overall degradation of fiber and hence composite is reduced for the newer low-oxygen fiber. (orig.)

  5. Structural investigation of the amorphous/crystalline interface by means of quantitative high-resolution transmission electron microscopy on the systems a-Si/c-Si and a-Ge/c-Si; Strukturelle Untersuchung der amorph/kristallinen Grenzflaeche mittels quantitativer hochaufloesender Transmissionselektronenmikroskopie an den Systemen a-Si/c-Si und a-Ge/c-Si

    Energy Technology Data Exchange (ETDEWEB)

    Thiel, K.

    2006-11-02

    In this Thesis the interfaces between covalently bonded crystalline and amorphous materials were studied with regard to the induced ordering in the amorphous material in the interfacial region by means of high-resolution transmission electron microscopy (HREM). The interface between amorphous germanium and crystalline silicon and the interface between amorphous and crystalline silicon served as material system. In order to quantify the influence of the crystalline order on the amorphous material, the HREM images were periodically averaged along the interface. The intensity components, which are correlated with the period of the lattice image, could thus be separated from the statistical intensity fluctuations, which are characteristic for images of amorphous materials. Since amorphous materials can only be described meaningful by statistical distribution functions, for the induced order a three-dimensional distribution function {rho}{sub 3D}(r) was taken as a basis, which describes the probability to find an atom in the amorphous material, if r=0 is the position of an atom in the crystal. Its two-dimensional projection, {rho}, can be determined using iterative image matching techniques on averaged experimental and simulated interface images. For the analyzed material systems {rho} exhibits lateral ordering as well as a pronounced layering in the vicinity of the interface. In the case of the a-Si/c-Si sample the mean orientation of bonds was 70.5 , as is in the case of the undistorted diamond lattice, while for the a-Ge/c-Si sample 65 resulted. The standard deviation for the distribution of the deviations from the mean bond angle yields for the a-Ge/c-Si sample in the first atomic layer a value of 11.3 and for the a-Si/c-Si sample 1.9 . These results suggest the conclusion, that the differences in these values are to be interpreted as the reaction of the amorphous material to the volume misfit. Although for both material systems 1.4 nm was calculated for the width

  6. Determining the fracture resistance of advanced SiC fiber reinforced SiC matrix composites

    International Nuclear Information System (INIS)

    Nozawa, T.; Katoh, Y.; Kishimoto, H.

    2007-01-01

    Full text of publication follows: One of the perceived advantages for highly-crystalline and stoichiometric silicon carbide (SiC) and SiC composites, e.g., advanced SiC fiber reinforced chemically-vapor-infiltrated (CVI) SiC matrix composites, is the retention of fast fracture properties after neutron irradiation at high-temperatures (∼1000 deg. C) to intermediate-doses (∼15 dpa). Accordingly, it has been clarified that the maximum allowable stress (or strain) limit seems unaffected in certain irradiation conditions. Meanwhile, understanding the mechanism of crack propagation from flaws, as potential weakest link to cause composite failure, is somehow lacking, despite that determining the strength criterion based on the fracture mechanics will eventually become important considering the nature of composites' fracture. This study aims to evaluate crack propagation behaviors of advanced SiC/SiC and to provide fundamentals on fracture resistance of the composites to define the strength limit for the practical component design. For those purposes, the effects of irreversible energies related to interfacial de-bonding, fiber bridging, and microcrack forming on the fracture resistance were evaluated. Two-dimensional SiC/SiC composites were fabricated by CVI or nano-infiltration and transient-eutectic-phase (NITE ) methods. Hi-Nicalon TM Type-S or Tyranno TM -SA fibers were used as reinforcements. In-plane mode-I fracture resistance was evaluated by the single edge notched bend technique. The key finding is the continuous Load increase with the crack growth for any types of advanced composites, while many studies specified the gradual load decrease for the conventional composites once the crack initiates. This high quasi-ductility appeared due primarily to high friction (>100 MPa) at the fiber/matrix interface using rough SiC fibers. The preliminary analysis based on the linear elastic fracture mechanics, which does not consider the effects of irreversible energy

  7. Role of atomic bonding for compound and glass formation in Ni-Si, Pd-Si, and Ni-B systems

    Science.gov (United States)

    Tanaka, K.; Saito, T.; Suzuki, K.; Hasegawa, R.

    1985-11-01

    Valence electronic structures of crystalline compounds and glassy alloys of Ni silicides, Pd silicides, and Ni borides are studied by soft-x-ray spectroscopy over wide ranges of Si and B concentrations. The samples prepared include bulk compounds, glassy ribbons, and amorphous sputtered films. Silicon Kβ emissions of Ni and Pd silicides generally consist of a prominent peak fixed at ~=4.5 and ~=5.8 eV below the Fermi level EF, respectively, with a shoulder near EF which grows and shifts toward lower energy with increasing Si concentration. The former is identified as due to Si p-like states forming Si 3p-Ni 3d or Si 3p-Pd 4d bonding states while the latter as due to the corresponding antibonding states. Ni L3 and Pd L3 emissions of these silicides indicate that Ni 3d and Pd 4d states lie between the above two states. These local electronic configurations are consistent with partial-density-of-states (PDOS) calculations performed by Bisi and Calandra. Similar electronic configurations are suggested for Ni borides from B Kα and Ni L3 emissions. Differences of emission spectra between compounds and glasses of similar compositions are rather small, but some enhancement of the contribution of antibonding states to the PDOS near EF is suggested for certain glasses over that of the corresponding compounds. These features are discussed in connection with the compound stability and glass formability.

  8. Simulation of light-induced degradation of μc-Si in a-Si/μc-Si tandem solar cells by the diode equivalent circuit

    Science.gov (United States)

    Weicht, J. A.; Hamelmann, F. U.; Behrens, G.

    2016-02-01

    Silicon-based thin film tandem solar cells consist of one amorphous (a-Si) and one microcrystalline (μc-Si) silicon solar cell. The Staebler - Wronski effect describes the light- induced degradation and temperature-dependent healing of defects of silicon-based solar thin film cells. The solar cell degradation depends strongly on operation temperature. Until now, only the light-induced degradation (LID) of the amorphous layer was examined in a-Si/μc-Si solar cells. The LID is also observed in pc-Si single function solar cells. In our work we show the influence of the light-induced degradation of the μc-Si layer on the diode equivalent circuit. The current-voltage-curves (I-V-curves) for the initial state of a-Si/pc-Si modules are measured. Afterwards the cells are degraded under controlled conditions at constant temperature and constant irradiation. At fixed times the modules are measured at standard test conditions (STC) (AM1.5, 25°C cell temperature, 1000 W/m2) for controlling the status of LID. After the degradation the modules are annealed at dark conditions for several hours at 120°C. After the annealing the dangling bonds in the amorphous layer are healed, while the degradation of the pc-Si is still present, because the healing of defects in pc-Si solar cells needs longer time or higher temperatures. The solar cells are measured again at STC. With this laboratory measured I-V-curves we are able to separate the values of the diode model: series Rs and parallel resistance Rp, saturation current Is and diode factor n.

  9. Carbon-sulfur bond formation by reductive elimination of gold(iii) thiolates.

    Science.gov (United States)

    Currie, Lucy; Rocchigiani, Luca; Hughes, David L; Bochmann, Manfred

    2018-04-10

    Whereas the reaction of the gold(iii) pincer complex (C^N^C)AuCl with 1-adamantyl thiol (AdSH) in the presence of base affords (C^N^C)AuSAd, the same reaction in the absence of base leads to formation of aryl thioethers as the products of reductive elimination of the Au-C and Au-S ligands (C^N^C = dianion of 2-6-diphenylpyridine or 2-6-diphenylpyrazine). Although high chemical stability is usually taken as a characteristic of pincer complexes, results show that thiols are capable of cleaving one of the pincer Au-C bonds. This reaction is not simply a function of S-H acidity, since no cleavage takes place with other more acidic X-H compounds, such as carbazole, amides, phenols and malonates. The reductive C-S elimination follows a second-order rate law, -d[1a]/dt = k[1a][AdSH]. Reductive elimination is enabled by displacement of the N-donor by thiol; this provides the conformational flexibility necessary for C-S bond formation to occur. Alternatively, reductive C-S bond formation can be induced by reaction of pre-formed thiolates (C^N^C)AuSR with a strong Brønsted acid, followed by addition of SMe2 as base. On the other hand, treatment of (C^N^C)AuR (R = Me, aryl, alkynyl) with thiols under similar conditions leads to selective C-C rather than C-S bond formation. The reaction of (C^N^C)AuSAd with H+ in the absence of a donor ligand affords the thiolato-bridged complex [{(C^N-CH)Au(μ-SAd)}2]2+ which was crystallographically characterised.

  10. Porous SiC/SiC composites development for industrial application

    International Nuclear Information System (INIS)

    Maeta, S.; Hinoki, T.

    2014-01-01

    Silicon carbide (SiC) is promising structural materials in nuclear fields due to an excellent irradiation resistance and low activation characteristics. Conventional SiC fibers reinforced SiC matrix (SiC/SiC composites) fabricated by liquid phase sintering (LPS-SiC/SiC composites) have been required high cost and long processing time. And microstructure and mechanical property data of finally obtained LPS-SiC/SiC composites are easily scattered, because quality of the composites depend on personal skill. Thus, conventional LPS-SiC/SiC composites are inadequate for industrial use. In order to overcome these issues, the novel “porous SiC/SiC composites” have been developed by means of liquid phase sintering fabrication process. The composites consist of porous SiC matrix and SiC fibers without conventional carbon interfacial layer. The composites don’t have concerns of the degradation interfacial layer at the severe accident. Porous SiC/SiC composites preform was prepared with a thin sheet shape of SiC, sintering additives and carbon powder mixture by tape casting process which was adopted because of productive and high yielding rate fabrication process. The preform was stacked with SiC fibers and sintered in hot-press at the high temperature in argon environment. The sintered preform was decarburized obtain porous matrix structure by heat-treatment in air. Moreover, mechanical property data scattering of the obtained porous SiC/SiC composites decreased. In the flexural test, the porous SiC/SiC composites showed pseudo-ductile behavior with sufficient strength even after heat treatment at high temperature in air. From these conclusions, it was proven that porous SiC/SiC composites were reliable material at severe environment such as high temperature in air, by introducing tape casting fabrication process that could produce reproducible materials with low cost and simple way. Therefore development of porous SiC/SiC composites for industrial application was

  11. Interfacial characterization of CVI-SiC/SiC composites

    International Nuclear Information System (INIS)

    Yang, W.; Kohyama, A.; Noda, T.; Katoh, Y.; Hinoki, T.; Araki, H.; Yu, J.

    2002-01-01

    The mechanical properties of the interfaces of two families of chemical vapor infiltration SiC/SiC composites, advanced Tyranno-SA and Hi-Nicalon fibers reinforced SiC/SiC composites with various carbon and SiC/C interlayers, were investigated by single fiber push-out/push-back tests. Interfacial debonding and fibers sliding mainly occurred adjacent to the first carbon layer on the fibers. The interfacial debonding strengths and frictional stresses for both Tyranno-SA/SiC and Hi-Nicalon/SiC composites were correlated with the first carbon layer thickness. Tyranno-SA/SiC composites exhibited much larger interfacial frictional stresses compared to Hi-Nicalon/SiC composites. This was assumed to be mainly contributed by the rather rough surface of the Tyranno-SA fiber

  12. InP-based photonic integrated circuit platform on SiC wafer.

    Science.gov (United States)

    Takenaka, Mitsuru; Takagi, Shinichi

    2017-11-27

    We have numerically investigated the properties of an InP-on-SiC wafer as a photonic integrated circuit (PIC) platform. By bonding a thin InP-based semiconductor on a SiC wafer, SiC can be used as waveguide cladding, a heat sink, and a support substrate simultaneously. Since the refractive index of SiC is sufficiently low, PICs can be fabricated using InP-based strip and rib waveguides with a minimum bend radius of approximately 7 μm. High-thermal-conductivity SiC underneath an InP-based waveguide core markedly improves heat dissipation, resulting in superior thermal properties of active devices such as laser diodes. The InP-on-SiC wafer has significantly smaller thermal stress than InP-on-SiO 2 /Si wafer, which prevents the thermal degradation of InP-based devices during high-temperature processes. Thus, InP on SiC provides an ideal platform for high-performance PICs.

  13. Characterization of anodic SiO2 films on P-type 4H-SiC

    International Nuclear Information System (INIS)

    Woon, W.S.; Hutagalung, S.D.; Cheong, K.Y.

    2009-01-01

    The physical and electronic properties of 100-120-nm thick anodic silicon dioxide film grown on p-type 4H-SiC wafer and annealed at different temperatures (500, 600, 700, and 800 deg. C ) have been investigated and reported. Chemical bonding of the films has been analyzed by Fourier transform infra red spectroscopy. Smooth and defect-free film surface has been revealed under field emission scanning electron microscope. Atomic force microscope has been used to study topography and surface roughness of the films. Electronic properties of the film have been investigated by high frequency capacitance-voltage and current-voltage measurements. As the annealing temperature increased, refractive index, dielectric constant, film density, SiC surface roughness, effective oxide charge, and leakage current density have been reduced until 700 deg. C . An increment of these parameters has been observed after this temperature. However, a reversed trend has been demonstrated in porosity of the film and barrier height between conduction band edge of SiO 2 and SiC

  14. Irradiation effect on Nite-SiC/SiC composites

    International Nuclear Information System (INIS)

    Hinoki, T.; Choi, Y.B.; Kohyama, A.; Ozawa, K.

    2007-01-01

    Full text of publication follows: Silicon carbide (SiC) and SiC composites are significantly attractive materials for nuclear application in particular due to exceptional low radioactivity, excellent high temperature mechanical properties and chemical stability. Despite of the excellent potential of SiC/SiC composites, the prospect of industrialization has not been clear mainly due to the low productivity and the high material cost. Chemical vapor infiltration (CVI) method can produce the excellent SiC/SiC composites with highly crystalline and excellent mechanical properties. It has been reported that the high purity SiC/SiC composites reinforced with highly crystalline fibers and fabricated by CVI method is very stable to neutron irradiation. However the production cost is high and it is difficult to fabricate thick and dense composites by CVI method. The novel processing called Nano-powder Infiltration and Transient Eutectic Phase (NITE) Processing has been developed based on the liquid phase sintering (LPS) process modification. The NITE processing can achieve both the excellent material quality and the low processing cost. The productivity of the processing is also excellent, and various kinds of shape and size of SiC/SiC composites can be produced by the NITE processing. The NITE processing can form highly crystalline matrix, which is requirement for nuclear application. The objective of this work is to understand irradiation effect of the NITESiC/SiC composites. The SiC/SiC composites used were reinforced with high purity SiC fibers, Tyranno TM SA and fabricated by the NITE method. The NITE-SiC/SiC composite bars and reference monolithic SiC bars fabricated by CVI and NITE were irradiated at up to 1.0 dpa and 600-1000 deg. C at JMTR, Japan. Mechanical properties of non-irradiated and irradiated NITESiC/ SiC composites bars were evaluated by tensile tests. Monolithic SiC bars were evaluated by flexural tests. The fracture surface was examined by SEM. Ultimate

  15. Near surface silicide formation after off-normal Fe-implantation of Si(001) surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Khanbabaee, B., E-mail: khanbabaee@physik.uni-siegen.de; Pietsch, U. [Solid State Physics, University of Siegen, D-57068 Siegen (Germany); Lützenkirchen-Hecht, D. [Fachbereich C - Physik, Bergische Universität Wuppertal, D-42097 Wuppertal (Germany); Hübner, R.; Grenzer, J.; Facsko, S. [Helmholtz-Zentrum Dresden-Rossendorf, 01314 Dresden (Germany)

    2014-07-14

    We report on formation of non-crystalline Fe-silicides of various stoichiometries below the amorphized surface of crystalline Si(001) after irradiation with 5 keV Fe{sup +} ions under off-normal incidence. We examined samples prepared with ion fluences of 0.1 × 10{sup 17} and 5 × 10{sup 17} ions cm{sup −2} exhibiting a flat and patterned surface morphology, respectively. Whereas the iron silicides are found across the whole surface of the flat sample, they are concentrated at the top of ridges at the rippled surface. A depth resolved analysis of the chemical states of Si and Fe atoms in the near surface region was performed by combining X-ray photoelectron spectroscopy and X-ray absorption spectroscopy (XAS) using synchrotron radiation. The chemical shift and the line shape of the Si 2p core levels and valence bands were measured and associated with the formation of silicide bonds of different stoichiometric composition changing from an Fe-rich silicides (Fe{sub 3}Si) close to the surface into a Si-rich silicide (FeSi{sub 2}) towards the inner interface to the Si(001) substrate. This finding is supported by XAS analysis at the Fe K-edge which shows changes of the chemical environment and the near order atomic coordination of the Fe atoms in the region close to surface. Because a similar Fe depth profile has been found for samples co-sputtered with Fe during Kr{sup +} ion irradiation, our results suggest the importance of chemically bonded Fe in the surface region for the process of ripple formation.

  16. Crystallization behavior and controlling mechanism of iron-containing Si-C-N ceramics.

    Science.gov (United States)

    Francis, Adel; Ionescu, Emanuel; Fasel, Claudia; Riedel, Ralf

    2009-11-02

    The crystallization behavior and controlling mechanism of the Si-Fe-C-N system based on polymer-derived SiCN ceramic filled with iron metal powder has been studied. The composite preparation conditions allow the formation of a random distribution of metallic particles in the polymer matrix volume for the Si-C-N system. Pyrolysis of the composite material at 1100 degrees C indicates the presence of one crystalline phase Fe(3)Si. While the sample pyrolyzed at 1200 degrees C reveals the formation of both Fe(3)Si and Fe(5)Si(3) phases, a crystallization of beta-SiC is additionally observed by increasing the temperature up to 1300 degrees C. The propensity for the formation of SiC is due to the presence of Fe(5)Si(3), where a solid-liquid-solid (SLS) growth mechanism was suggested to occur. X-ray diffraction (XRD), scanning electron microscopy (SEM), differential thermal analysis (DTA), and thermal gravimetric analysis with mass spectroscopic detection (TGA-MS) were employed to investigate the crystallization behavior of the Si-Fe-C-N system.

  17. Formation and characterization of nanoparticles formed by sequential ion implantation of Au and Co into SiO2

    International Nuclear Information System (INIS)

    Kluth, P.; Hoy, B.; Johannessen, B.; Dunn, S.G.; Foran, G.J.; Ridgway, M.C.

    2007-01-01

    Nanoparticles (NPs) were formed by sequential ion implantation of Au and Co into thin SiO 2 . After Au implantation and annealing, Co implantations were carried out at room temperature (RT) and 400 deg. C, respectively, with no subsequent annealing. The NPs were investigated by means of Rutherford backscattering spectroscopy (RBS), transmission electron microscopy (TEM) and extended X-ray absorption fine structure spectroscopy (EXAFS). TEM shows the formation of Co-Au core-shell NPs for the Co implantation at 400 deg. C. EXAFS measurements indicate significant strain in the NPs and a bond-length expansion of the Co-Co bonds in the NP core with a concomitant contraction of the Au-Au bonds in the Au shells. NPs are also observed by TEM for the Co implantation performed at RT, however, a lack of crystallinity is apparent from electron diffraction and EXAFS measurements

  18. Silylene-Nickel Promoted Cleavage of B-O Bonds: From Catechol Borane to the Hydroborylene Ligand.

    Science.gov (United States)

    Hadlington, Terrance J; Szilvási, Tibor; Driess, Matthias

    2017-06-19

    The first 16 valence electron [bis(NHC)](silylene)Ni 0 complex 1, [( TMS L)ClSi:→Ni(NHC) 2 ], bearing the acyclic amido-chlorosilylene ( TMS L)ClSi: ( TMS L=N(SiMe 3 )Dipp; Dipp=2,6-Pr i 2 C 6 H 4 ) and two NHC ligands (N-heterocyclic carbene=:C[(Pr i )NC(Me)] 2 ) was synthesized in high yield and structurally characterized. Compound 1 is capable of facile dihydrogen activation under ambient conditions to give the corresponding HSi-NiH complex 2. Most notably, 1 reacts with catechol borane to afford the unprecedented hydroborylene-coordinated (chloro)(silyl)nickel(II) complex 3, {[cat( TMS L)Si](Cl)Ni←:BH(NHC) 2 }, via the cleavage of two B-O bonds and simultaneous formation of two Si-O bonds. The mechanism for the formation of 3 was rationalized by means of DFT calculations, which highlight the powerful synergistic effects of the Si:→Ni moiety in the breaking of incredibly strong B-O bonds. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. SiC/SiC Cladding Materials Properties Handbook

    Energy Technology Data Exchange (ETDEWEB)

    Snead, Mary A. [Brookhaven National Lab. (BNL), Upton, NY (United States); Katoh, Yutai [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Koyanagi, Takaaki [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Singh, Gyanender P. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

    2017-08-01

    When a new class of material is considered for a nuclear core structure, the in-pile performance is usually assessed based on multi-physics modeling in coordination with experiments. This report aims to provide data for the mechanical and physical properties and environmental resistance of silicon carbide (SiC) fiber–reinforced SiC matrix (SiC/SiC) composites for use in modeling for their application as accidenttolerant fuel cladding for light water reactors (LWRs). The properties are specific for tube geometry, although many properties can be predicted from planar specimen data. This report presents various properties, including mechanical properties, thermal properties, chemical stability under normal and offnormal operation conditions, hermeticity, and irradiation resistance. Table S.1 summarizes those properties mainly for nuclear-grade SiC/SiC composites fabricated via chemical vapor infiltration (CVI). While most of the important properties are available, this work found that data for the in-pile hydrothermal corrosion resistance of SiC materials and for thermal properties of tube materials are lacking for evaluation of SiC-based cladding for LWR applications.

  20. Room-Temperature Growth of SiC Thin Films by Dual-Ion-Beam Sputtering Deposition

    Directory of Open Access Journals (Sweden)

    C. G. Jin

    2008-01-01

    Full Text Available Silicon carbide (SiC films were prepared by single and dual-ion-beamsputtering deposition at room temperature. An assisted Ar+ ion beam (ion energy Ei = 150 eV was directed to bombard the substrate surface to be helpful for forming SiC films. The microstructure and optical properties of nonirradicated and assisted ion-beam irradicated films have been characterized by transmission electron microscopy (TEM, scanning electron microscopy (SEM, Fourier transform infrared spectroscopy (FTIR, and Raman spectra. TEM result shows that the films are amorphous. The films exposed to a low-energy assisted ion-beam irradicated during sputtering from a-SiC target have exhibited smoother and compacter surface topography than which deposited with nonirradicated. The ion-beam irradicated improves the adhesion between film and substrate and releases the stress between film and substrate. With assisted ion-beam irradicated, the density of the Si–C bond in the film has increased. At the same time, the excess C atoms or the size of the sp2 bonded clusters reduces, and the a-Si phase decreases. These results indicate that the composition of the film is mainly Si–C bond.

  1. Thermal detection mechanism of SiC based hydrogen resistive gas sensors

    Science.gov (United States)

    Fawcett, Timothy J.; Wolan, John T.; Lloyd Spetz, Anita; Reyes, Meralys; Saddow, Stephen E.

    2006-10-01

    Silicon carbide (SiC) resistive hydrogen gas sensors have been fabricated and tested. Planar NiCr contacts were deposited on a thin 3C-SiC epitaxial film grown on thin Si wafers bonded to polycrystalline SiC substrates. At 673K, up to a 51.75±0.04% change in sensor output current and a change in the device temperature of up to 163.1±0.4K were demonstrated in response to 100% H2 in N2. Changes in device temperature are shown to be driven by the transfer of heat from the device to the gas, giving rise to a thermal detection mechanism.

  2. Oxidation protection of multilayer CVD SiC/B/SiC coatings for 3D C/SiC composite

    International Nuclear Information System (INIS)

    Liu Yongsheng; Cheng Laifei; Zhang Litong; Wu Shoujun; Li Duo; Xu Yongdong

    2007-01-01

    A CVD boron coating was introduced between two CVD SiC coating layers. EDS and XRD results showed that the CVD B coating was a boron crystal without other impurity elements. SEM results indicated that the CVD B coating was a flake-like or column-like crystal with a compact cross-section. The crack width in the CVD SiC coating deposited on CVD B is smaller than that in a CVD SiC coating deposited on CVD SiC coating. After oxidation at 700 deg. C and 1000 deg. C, XRD results indicated that the coating was covered by product B 2 O 3 or B 2 O 3 .xSiO 2 film. The cracks were sealed as observed by SEM. There was a large amount of flake-like material on hybrid coating surface after oxidation at 1300 deg. C. Oxidation weight loss and residual flexural strength results showed that hybrid SiC/B/SiC multilayer coating provided better oxidation protection for C/SiC composite than a three layer CVD SiC coating at temperatures from 700 deg. C to 1000 deg. C for 600 min, but worse oxidation protection above 1000 deg. C due to the large amount of volatilization of B 2 O 3 or B 2 O 3 .xSiO 2

  3. Discontinuous phase formation and selective attack of SiC materials exposed to low oxygen partial pressure environments

    Energy Technology Data Exchange (ETDEWEB)

    Butt, D.P. [Los Alamos National Lab., NM (United States); Tressler, R.E.; Spear, K.E. [Pennsylvania State Univ., University Park, PA (United States). Dept. of Materials Science and Engineering

    1993-09-01

    Three SiC materials were exposed to gas mixtures containing N{sub 2}, H{sub 2}, and CO at 1000-1300C, 1-740 torr for a few to 1000 h. Kinetic and thermodynamic studies indicate that CO is the predominant oxidizing species. A variety of corrosion processes were observed, including surface and internal pit formation, needle growth, grain boundary attack, and attack of impurities and surrounding material. In the case of a siliconized SiC, impurities such as Ca, Al, and Fe diffused rapidly through the Si matrix forming complex calcium aluminosilicates on the surface, leaving behind internal voids. Evaluation of the mechanical properties, including fractography, revealed a variety of degradative phenomena. Efforts to identify causes of pit formation suggested that the overall process was complex. Pits formed during attack of grain boundaries and regions containing transition metal impurities. Studies of single crystals showed preferential attack near impurities and crystalline defects, indicating that damaged crystals or certain crystal orientations in the polycrystalline materials are susceptible to attack. In addition, under some conditions where pit formation was observed, the strength of certain materials increased apparently due to flaw healing. It is suggested that flaws can heal in the absence of mechanical stress due to their high surface energy. However, second phases observed within partially healed surface cracks suggest impurities also contribute to the flaw healing processes.

  4. Formation of Si/SiC multilayers by low-energy ion implantation and thermal annealing

    NARCIS (Netherlands)

    Dobrovolskiy, S.; Yakshin, A. E.; Tichelaar, F. D.; Verhoeven, J.; E. Louis,; F. Bijkerk,

    2010-01-01

    Si/SiC multilayer systems for XUV reflection optics with a periodicity of 10-20 nm were produced by sequential deposition of Si and implantation of 1 key CHx+ ions. Only about 3% of the implanted carbon was transferred into the SIC, with a thin, 0.5-1 nm, buried SIC layer being formed. We

  5. Investigation of 3C-SiC/SiO2 interfacial point defects from ab initio g-tensor calculations and electron paramagnetic resonance measurements

    Science.gov (United States)

    Nugraha, T. A.; Rohrmueller, M.; Gerstmann, U.; Greulich-Weber, S.; Stellhorn, A.; Cantin, J. L.; von Bardeleben, J.; Schmidt, W. G.; Wippermann, S.

    SiC is widely used in high-power, high-frequency electronic devices. Recently, it has also been employed as a building block in nanocomposites used as light absorbers in solar energy conversion devices. Analogous to Si, SiC features SiO2 as native oxide that can be used for passivation and insulating layers. However, a significant number of defect states are reported to form at SiC/SiO2 interfaces, limiting mobility and increasing recombination of free charge carriers. We investigated the growth of oxide on different 3C-SiC surfaces from first principles. Carbon antisite Csi defects are found to be strongly stabilized in particular at the interface, because carbon changes its hybridization from sp3 in the SiC-bulk to sp2 at the interface, creating a dangling bond inside a porous region of the SiO2 passivating layer. Combining ab initio g-tensor calculations and electron paramagnetic resonance (EPR) measurements, we show that Csi defects explain the measured EPR signatures, while the hyperfine structure allows to obtain local structural information of the oxide layer. Financial support from BMBF NanoMatFutur Grant 13N12972 and DFG priority program SPP-1601 is gratefully acknowledged.

  6. Unusual C-C bond cleavage in the formation of amine-bis(phenoxy) group 4 benzyl complexes: Mechanism of formation and application to stereospecific polymerization

    KAUST Repository

    Gowda, Ravikumar R.

    2014-08-11

    Group 4 tetrabenzyl compounds MBn4 (M = Zr, Ti), upon protonolysis with an equimolar amount of the tetradentate amine-tris(phenol) ligand N[(2,4-tBu2C6H2(CH 2)OH]3 in toluene from -30 to 25 °C, unexpectedly lead to amine-bis(phenoxy) dibenzyl complexes, BnCH2N[(2,4- tBu2C6H2(CH2)O] 2MBn2 (M = Zr (1), Ti (2)) in 80% (1) and 75% (2) yields. This reaction involves an apparent cleavage of the >NCH2-ArOH bond (loss of the phenol in the ligand) and formation of the >NCH 2-CH2Bn bond (gain of the benzyl group in the ligand). Structural characterization of 1 by X-ray diffraction analysis confirms that the complex formed is a bis(benzyl) complex of Zr coordinated by a newly derived tridentate amine-bis(phenoxy) ligand arranged in a mer configuration in the solid state. The abstractive activation of 1 and 2 with B(C6F 5)3·THF in CD2Cl2 at room temperature generates the corresponding benzyl cations {BnCH2N[(2,4- tBu2C6H2(CH2)O] 2MBn(THF)}+[BnB(C6F5) 3]- (M = Zr (3), Ti, (4)). These cationic complexes, along with their analogues derived from (imino)phenoxy tri- and dibenzyl complexes, [(2,6-iPr2C6H3)N=C(3,5- tBu2C6H2)O]ZrBn3 (5) and [2,4-Br2C6H2(O)(6-CH2(NC 5H9))CH2N=CH(2-adamantyl-4-MeC 6H2O)]ZrBn2 (6), have been found to effectively polymerize the biomass-derived renewable β-methyl-α-methylene- γ-butyrolactone (βMMBL) at room temperature into the highly stereoregular polymer PβMMBL with an isotacticity up to 99% mm. A combined experimental and DFT study has yielded a mechanistic pathway for the observed unusual C-C bond cleavage in the present protonolysis reaction between ZrBn4 and N[(2,4-tBu2C 6H2(CH2)OH]3 for the formation of complex 1, which involves the benzyl radical and the Zr(III) species, resulting from thermal and photochemical decomposition of ZrBn4, followed by a series of reaction sequences consisting of protonolysis, tautomerization, H-transfer, oxidation, elimination, and radical coupling. © 2014 American Chemical Society.

  7. Microstructure Evolution and Durability of Advanced Environmental Barrier Coating Systems for SiC/SiC Ceramic Matrix Composites

    Science.gov (United States)

    Zhu, Dongming; Evans, Laura J.; McCue, Terry R.; Harder, Bryan

    2016-01-01

    Environmental barrier coated SiC-SiC ceramic matrix composites (CMCs) systems will play a crucial role in next generation turbine engines for hot-section component applications because of their ability to significantly increase engine operating temperatures with improved efficiency, reduce engine weight and cooling requirements. Advanced HfO2 and rare earth silicate environmental barrier coatings (EBCs), along with multicomponent hafnium and rare earth silicide EBC bond coats have been developed. The coating degradation mechanisms in the laboratory simulated engine thermal cycling, and fatigue-creep operating environments are also being investigated. This paper will focus on the microstructural and compositional evolutions of an advanced environmental barrier coating system on a SiC-SiC CMC substrate during the high temperature simulated durability tests, by using a Field Emission Gun Scanning Electron Microscopy, Energy Dispersive Spectroscopy (EDS) and Wavelength Dispersive Spectroscopy (WDS). The effects of Calcium-Magnesium-Alumino-Silicate (CMAS) from road sand or volcano-ash deposits on the degradation mechanisms of the environmental barrier coating systems will also be discussed. The detailed analysis results help understand the EBC-CMC system performance, aiming at the durability improvements to achieve more robust, prime-reliant environmental barrier coatings.

  8. Microstructure and Mechanical Property of SiCf/SiC and Cf/SiC Composites

    International Nuclear Information System (INIS)

    Lee, S P; Cho, K S; Lee, H U; Lee, J K; Bae, D S; Byun, J H

    2011-01-01

    The mechanical properties of SiC based composites reinforced with different types of fabrics have been investigated, in conjunction with the detailed analyses of their microstructures. The thermal shock properties of SiC f /SiC composites were also examined. All composites showed a dense morphology in the matrix region. Carbon coated PW-SiC f /SiC composites had a good fracture energy, even if their strength was lower than that of PW-C f /SiC composites. SiC f /SiC composites represented a great reduction of flexural strength at the thermal shock temperature difference of 300 deg. C.

  9. Synthesis of boron nitride nanotubes with SiC nanowire as template

    International Nuclear Information System (INIS)

    Zhong, B.; Song, L.; Huang, X.X.; Wen, G.W.; Xia, L.

    2011-01-01

    Highlights: → Boron nitride nanotubes (BNNTs) have been fabricated using SiC nanowires as template. → SiC nanowires could be effectively etched out by the vapors decomposed from ammonia borane, leading to the formation of BNNTs. → A template self-sacrificing mechanism is responsible for the formation of BNNTs. -- Abstract: A novel template method for the preparation of boron nitride nanotubes (BNNTs) using SiC nanowire as template and ammonia borane as precursor is reported. We find out that the SiC nanowires could be effectively etched out by the vapors decomposed from ammonia borane, leading to the formation of BNNTs. The as-prepared products are well characterized by means of complementary analytical techniques. A possible formation mechanism is disclosed. The method developed here paves the way for large scale production of BNNTs.

  10. The use of ultrasmall iron(0) nanoparticles as catalysts for the selective hydrogenation of unsaturated C-C bonds.

    Science.gov (United States)

    Kelsen, Vinciane; Wendt, Bianca; Werkmeister, Svenja; Junge, Kathrin; Beller, Matthias; Chaudret, Bruno

    2013-04-28

    The performance of well-defined ultrasmall iron(0) nanoparticles (NPs) as catalysts for the selective hydrogenation of unsaturated C-C and C=X bonds is reported. Monodisperse iron nanoparticles of about 2 nm size are synthesized by the decomposition of {Fe(N[Si(CH3)3]2)2}2 under dihydrogen. They are found to be active for the hydrogenation of various alkenes and alkynes under mild conditions and weakly active for C=O bond hydrogenation.

  11. Cat-CVD-prepared oxygen-rich μc-Si:H for wide-bandgap material

    International Nuclear Information System (INIS)

    Matsumoto, Yasuhiro; Ortega, Mauricio; Peza, Juan-Manuel; Reyes, Mario-Alfredo; Escobosa, Arturo

    2005-01-01

    Microcrystalline phase-involved oxygen-rich a-Si:H (hydrogenated amorphous silicon) films have been obtained using catalytic chemical vapor deposition (Cat-CVD) process. Pure SiH 4 (silane), H 2 (hydrogen), and O 2 (oxygen) gases were introduced in the chamber by maintaining a pressure of 0.1 Torr. A tungsten catalyzer was fixed at temperatures of 1750 and 1950 deg. C for film deposition on glass and crystalline silicon substrates at 200 deg. C. As revealed from X-ray diffraction spectra, the microcrystalline phase appears for oxygen-rich a-Si:H samples deposited at a catalyzer temperature of 1950 deg. C. However, this microcrystalline phase tends to disappear for further oxygen incorporation. The oxygen content in the deposited films was corroborated by FTIR analysis revealing Si-O-Si bonds and typical Si-H bonding structures. The optical bandgap of the sample increases from 2.0 to 2.7 eV with oxygen gas flow and oxygen incorporation to the deposited films. In the present thin film deposition conditions, no strong tungsten filament degradation was observed after a number of sample preparations

  12. SiC Nanoparticles Toughened-SiC/MoSi2-SiC Multilayer Functionally Graded Oxidation Protective Coating for Carbon Materials at High Temperatures

    Science.gov (United States)

    Abdollahi, Alireza; Ehsani, Naser; Valefi, Zia; Khalifesoltani, Ali

    2017-05-01

    A SiC nanoparticle toughened-SiC/MoSi2-SiC functionally graded oxidation protective coating on graphite was prepared by reactive melt infiltration (RMI) at 1773 and 1873 K under argon atmosphere. The phase composition and anti-oxidation behavior of the coatings were investigated. The results show that the coating was composed of MoSi2, α-SiC and β-SiC. By the variations of Gibbs free energy (calculated by HSC Chemistry 6.0 software), it could be suggested that the SiC coating formed at low temperatures by solution-reprecipitation mechanism and at high temperatures by gas-phase reactions and solution-reprecipitation mechanisms simultaneously. SiC nanoparticles could improve the oxidation resistance of SiC/MoSi2-SiC multiphase coating. Addition of SiC nanoparticles increases toughness of the coating and prevents spreading of the oxygen diffusion channels in the coating during the oxidation test. The mass loss and oxidation rate of the SiC nanoparticle toughened-SiC/MoSi2-SiC-coated sample after 10-h oxidation at 1773 K were only 1.76% and 0.32 × 10-2 g/cm3/h, respectively.

  13. Research on SiC Whisker Prepared by H-PSO

    Directory of Open Access Journals (Sweden)

    WANG Yao

    2017-10-01

    Full Text Available SiC whiskers were prepared on the matrix of graphite by using high hydrogenous silicone oil(PSO as raw material. The effect of surface conditions of graphite and heating temperature on the growth of SiC whisker was mainly studied in this paper. The main factor which affects the nucleation and growth of SiC whisker is the heating temperature, with the heating temperature rising, the production of SiC whisker increases. The surface condition of graphite matrix also influences the growth of SiC whisker. With the nucleation points provided by graphite matrix defects increasing, the production of SiC whisker incleases and SiC whisker starts to overlap with each other. The formation process of SiC whisker includes two steps:nucleation and growth. SiC whisker nucleates at low temperature and grows at high temperature, which follows the VLS (vapor-liquid-solid growth mechanism.

  14. Electrical resistivity and thermal conductivity of SiC/Si ecoceramics prepared from sapele wood biocarbon

    Science.gov (United States)

    Parfen'eva, L. S.; Orlova, T. S.; Smirnov, B. I.; Smirnov, I. A.; Misiorek, H.; Mucha, J.; Jezowski, A.; Gutierrez-Pardo, A.; Ramirez-Rico, J.

    2012-10-01

    Samples of β-SiC/Si ecoceramics with a silicon concentration of ˜21 vol % have been prepared using a series of consecutive procedures (carbonization of sapele wood biocarbon, synthesis of high-porosity biocarbon with channel-type pores, infiltration of molten silicon into empty channels of the biocarbon, formation of β-SiC, and retention of residual silicon in channels of β-SiC). The electrical resistivity ρ and thermal conductivity κ of the β-SiC/Si ecoceramic samples have been measured in the temperature range 5-300 K. The values of ρ{Si/chan}( T) and κ{Si/chan}( T) have been determined for silicon Sichan located in β-SiC channels of the synthesized β-SiC/Si ecoceramics. Based on the performed analysis of the obtained results, the concentration of charge carriers (holes) in Sichan has been estimated as p ˜ 1019 cm-3. The factors that can be responsible for such a high value of p have been discussed. The prospects for practical application of β-SiC/Si ecoceramics have been considered.

  15. Argon plasma treatment of silicon nitride (SiN) for improved antireflection coating on c-Si solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Ghosh, Hemanta; Mitra, Suchismita; Saha, Hiranmay; Datta, Swapan Kumar; Banerjee, Chandan, E-mail: chandanbanerjee74@gmail.com

    2017-01-15

    Highlights: • Antireflection properties of argon plasma treated silicon nitride layer and its effect on crystalline silicon solar cell. • The reduction in reflection due to the formation of a silicon oxynitride/silicon nitride double layer. • EQE reveals a relative increase of 2.72% in J{sub sc} and 4.46% in conversion efficiency. - Abstract: Antireflection properties of argon plasma treated silicon nitride layer and its effect on crystalline silicon solar cell is presented here. Hydrogenated silicon nitride (a-SiN:H) layer has been deposited on a silicon substrate by Plasma Enhanced Chemical Vapour Deposition (PECVD) using a mixture of silane (SiH{sub 4}), ammonia (NH{sub 3}) and hydrogen (H{sub 2}) gases followed by a argon plasma treatment. Optical analysis reveals a significant reduction in reflectance after argon plasma treatment of silicon nitride layer. While FESEM shows nanostructures on the surface of the silicon nitride film, FTIR reveals a change in Si−N, Si−O and N−H bonds. On the other hand, ellipsometry shows the variation of refractive index and formation of double layer. Finally, a c-Si solar cell has been fabricated with the said anti-reflection coating. External quantum efficiency reveals a relative increase of 2.72% in the short circuit current density and 4.46% in conversion efficiency over a baseline efficiency of 16.58%.

  16. Effect of nitrogen on the electrochemical performance of core–shell structured Si/C nanocomposites as anode materials for Li-ion batteries

    International Nuclear Information System (INIS)

    Tao, Hua-Chao; Huang, Mian; Fan, Li-Zhen; Qu, Xuanhui

    2013-01-01

    Highlights: ► N-containing core–shell structured Si/C nanocomposites are prepared via two steps. ► The N-containing Si/C nanocomposites exhibit high capacity and excellent cycling stability. ► The appropriate nitrogen has a beneficial effect on the electrochemical performance. -- Abstract: Core–shell structured Si/C nanocomposites with different nitrogen contents are prepared by in situ polymerization of aniline in the suspension of silicon nanoparticles followed by carbonization of Si/polyaniline (PANI) nanocomposites at different temperatures. The nitrogen contents of Si/C nanocomposites decrease gradually with increasing carbonization temperatures. The effect of nitrogen contents on the electrochemical performance of Si/C nanocomposites as anode materials for lithium ion batteries is investigated. It is found that the Si/C nanocomposites with 4.75 wt.% nitrogen exhibit the high specific capacity of 795 mAh g −1 after 50 cycles at a current density of 100 mA g −1 and excellent cycling stability. The appropriate nitrogen in Si/C nanocomposites plays a beneficial role in the improvement of electrochemical performance. The nitrogen in Si/C nanocomposites increases the reversible capacity, which may be due to the formation of vacancies and dangling bonds around the nitrogen sites

  17. Copper-catalyzed transformation of ketones to amides via C(CO)-C(alkyl) bond cleavage directed by picolinamide.

    Science.gov (United States)

    Ma, Haojie; Zhou, Xiaoqiang; Zhan, Zhenzhen; Wei, Daidong; Shi, Chong; Liu, Xingxing; Huang, Guosheng

    2017-09-13

    Copper catalyzed chemoselective cleavage of the C(CO)-C(alkyl) bond leading to C-N bond formation with chelation assistance of N-containing directing groups is described. Inexpensive Cu(ii)-acetate serves as a convenient catalyst for this transformation. This method highlights the emerging strategy to transform unactivated alkyl ketones into amides in organic synthesis and provides a new strategy for C-C bond cleavage.

  18. Estimation of interface resistivity in bonded Si for the development of high performance radiation detectors

    International Nuclear Information System (INIS)

    Kanno, Ikuo; Yamashita, Makoto; Nomiya, Seiichiro; Onabe, Hideaki

    2007-01-01

    For the development of high performance radiation detectors, direct bonding of Si wafers would be an useful method. Previously, p-n bonded Si were fabricated and they showed diode characteristics. The interface resistivity was, however, not investigated in detail. For the study of interface resistivity, n-type Si wafers with different resistivities were bonded. The resistivity of bonded Si wafers were measured and the interface resistivity was estimated by comparing with the results of model calculations. (author)

  19. Why is the Bond Multiplicity in C2 so Elusive?

    Czech Academy of Sciences Publication Activity Database

    Cooper, D.L.; Penotti, F.E.; Ponec, Robert

    2015-01-01

    Roč. 1053, SI (2015), s. 189-194 ISSN 2210-271X Institutional support: RVO:67985858 Keywords : bond multiplicity in C2 * spin correlation matrices * full GVB and spin-coupled Subject RIV: CC - Organic Chemistry Impact factor: 1.403, year: 2015

  20. Electronic structure and chemical bonding in LaIrSi-type intermetallics

    Energy Technology Data Exchange (ETDEWEB)

    Matar, Samir F. [Bordeaux Univ., Pessac (France). CNRS; Poettgen, Rainer [Muenster Univ. (Germany). Inst. fuer Anorganische und Analytische Chemie; Nakhl, Michel [Univ. Libanaise, Fanar (Lebanon). Ecole Doctorale Sciences et Technologies

    2017-05-01

    The cubic LaIrSi type has 23 representatives in aluminides, gallides, silicides, germanides, phosphides, and arsenides, all with a valence electron count of 16 or 17. The striking structural motif is a three-dimensional network of the transition metal (T) and p element (X) atoms with TX{sub 3/3} respectively XT{sub 3/3} coordination. Alkaline earth or rare earth atoms fill cavities within the polyanionic [TX]{sup δ-} networks. The present work presents a detailed theoretical study of chemical bonding in LaIrSi-type representatives, exemplarily for CaPtSi, BaIrP, BaAuGa, LaIrSi, CeRhSi, and CeIrSi. DFT-GGA-based electronic structure calculations show weakly metallic compounds with itinerant small magnitude DOSs at E{sub F} except for CeRhSi whose large Ce DOS at E{sub F} leads to a finite magnetization on Ce (0.73 μ{sub B}) and induced small moments of opposite sign on Rh and Si in a ferromagnetic ground state. The chemical bonding analyses show dominant bonding within the [TX]{sup δ-} polyanionic networks. Charge transfer magnitudes were found in accordance with the course of the electronegativites of the chemical constituents.

  1. Local atomic structure and chemical order in amorphous SiGe:H and SiC:H alloys

    International Nuclear Information System (INIS)

    Pisarkiewicz, T.; Stapinski, T.

    1994-01-01

    The local structure and chemical ordering in amorphous hydrogenated silicon-germanium and silicon-carbon alloys were analyzed mainly with the help of extended x-ray absorption fine structure (EXAFS) spectroscopy, Raman scattering and electron diffraction. Ge-Ge and Ge-Si distances were found to be independent of concentration and the composition of the first coordination shell around Ge is consistent with a random mixing of the two species in a-Si 1-x Ge:H alloy. The first-coordination-shell average bond lengths for Si-Si and SiC in a-Si 1-x C x :H are also constant with concentration x and the comparison of the first coordination shell composition around Si with average concentration indicates that the alloys tends to be chemically ordered. The degree of crystallinity in microcrystalline Si films determined by EXAFS is in agreement with that obtained in Raman scattering analysis. (author). 16 refs, 5 figs

  2. Infrared Spectra and Structures of SiH{sub 2}-(CH{sub 2}){sub 2} and CH{sub 2}=CH-SiH{sub 3} Intermediates Prepared in Reactions of Laser-ablated Silicon Atoms with Ethane

    Energy Technology Data Exchange (ETDEWEB)

    Cho, Han-Gook [Incheon National University, Incheon (Korea, Republic of); Andrews, Lester [University of Virginia, Charlottesville (United States)

    2016-03-15

    SiH{sub 2}-(CH{sub 2}){sub 2} and CH{sub 2}=CH-SiH{sub 3} were observed in the matrix IR spectra following reactions of laser-ablated Si atoms with ethane on the basis of correlation with computed frequencies. Evidently photon energy is required for the formation of the cyclic Si compound. These Si complexes are similar to the primary products in the previous studies of group 4 metals, in line with the previous results that s{sup 2}p{sup 2} and s{sup 2}d{sup 2} electronic configurations yield similar products. The relatively long C–C bond in the cyclic Si product reflects the structural strain, and the short C-Si and C-C bonds of CH{sub 3}CH=SiH{sub 2} and CH{sub 2}=CH-SiH{sub 3} show that they are true double bonds in line with the natural bond orders. Reactions of transition-metal atoms with small alkanes and halomethanes have been studied in a series of recent investigations. High oxidation-state products (methylidenes and methylidynes) along with insertion complexes were identified in the matrix spectra. It is interesting whether or not Si, a group 14 metalloid, undergoes similar reactions with larger hydrocarbons to provide higher oxidation-state compounds.

  3. Graphene-bonded and -encapsulated si nanoparticles for lithium ion battery anodes.

    Science.gov (United States)

    Wen, Yang; Zhu, Yujie; Langrock, Alex; Manivannan, Ayyakkannu; Ehrman, Sheryl H; Wang, Chunsheng

    2013-08-26

    Silicon (Si) has been considered a very promising anode material for lithium ion batteries due to its high theoretical capacity. However, high-capacity Si nanoparticles usually suffer from low electronic conductivity, large volume change, and severe aggregation problems during lithiation and delithiation. In this paper, a unique nanostructured anode with Si nanoparticles bonded and wrapped by graphene is synthesized by a one-step aerosol spraying of surface-modified Si nanoparticles and graphene oxide suspension. The functional groups on the surface of Si nanoparticles (50-100 nm) not only react with graphene oxide and bind Si nanoparticles to the graphene oxide shell, but also prevent Si nanoparticles from aggregation, thus contributing to a uniform Si suspension. A homogeneous graphene-encapsulated Si nanoparticle morphology forms during the aerosol spraying process. The open-ended graphene shell with defects allows fast electrochemical lithiation/delithiation, and the void space inside the graphene shell accompanied by its strong mechanical strength can effectively accommodate the volume expansion of Si upon lithiation. The graphene shell provides good electronic conductivity for Si nanoparticles and prevents them from aggregating during charge/discharge cycles. The functionalized Si encapsulated by graphene sample exhibits a capacity of 2250 mAh g⁻¹ (based on the total mass of graphene and Si) at 0.1C and 1000 mAh g⁻¹ at 10C, and retains 85% of its initial capacity even after 120 charge/discharge cycles. The exceptional performance of graphene-encapsulated Si anodes combined with the scalable and one-step aerosol synthesis technique makes this material very promising for lithium ion batteries. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  4. β-FeSi2 films prepared on 6H-SiC substrates by magnetron sputtering

    Science.gov (United States)

    Hong, Li; Hongbin, Pu; Chunlei, Zheng; Zhiming, Chen

    2015-06-01

    β-FeSi2 thin films have been successfully prepared by magnetron sputtering and post rapid thermal annealing method on 6H-SiC (0001) substrates using a FeSi2 target and a Si target. X-ray diffraction (XRD) and Raman spectroscopy are applied to analyze the formation of β-FeSi2 films. XRD spectra reveal that the amorphous FeSi2 films are transformed to β-FeSi2 phase as the annealing temperature is increased from 500 to 900 °C for 5 min and the optimal annealing temperature is 900 °C. The formation of β-FeSi2 is also confirmed by Raman spectroscopy. Scanning electron microscope (SEM) observations indicate that the film is flat, relatively compact and the interface between β-FeSi2 and 6H-SiC is clear. Atomic force microscope (AFM) measurements demonstrate that the surface roughness confirmed by the root mean square (RMS) of the β-FeSi2 film is 0.87 nm. Near-infrared spectrophotometer observation shows that the absorption coefficient is of the order of 105 cm-1 and the optical band-gap of the β-FeSi2 film is 0.88 eV. The β-FeSi2 film with high crystal quality is fabricated by co-sputtering a FeSi2 target and a Si target for 60 min and annealing at 900 °C for 5 min. Project supported by the National Natural Science Foundation of China (No. 51177134) and the Natural Science Basic Research Plan in Shaanxi Province of China (No. 2015JM6286).

  5. Synthesis of nanostructured SiC using the pulsed laser deposition technique

    International Nuclear Information System (INIS)

    Zhang, H.X.; Feng, P.X.; Makarov, V.; Weiner, B.R.; Morell, G.

    2009-01-01

    We report the new results on the direct synthesis of nanostructured silicon carbide (SiC) materials using the pulsed laser deposition technique. Scanning electron microscopy images revealed that SiC nanoholes, nanosprouts, nanowires, and nanoneedles were obtained. The crystallographic structure, chemical composition, and bond structure of the nanoscale SiC materials were investigated using X-ray diffraction, energy dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy, and Raman scattering spectroscopy. The transverse optical mode and longitudinal optical mode in Raman spectra were found to become sharper as the substrate temperature was increased, while the material structure evolved from amorphous to crystalline

  6. Structural stabilities and electronic properties of fully hydrogenated SiC sheet

    International Nuclear Information System (INIS)

    Wang, Xin-Quan; Wang, Jian-Tao

    2011-01-01

    The intriguing structural and electronic properties of fully hydrogenated SiC honeycomb sheet are studied by means of ab initio calculations. Based on structure optimization and phonon dispersion analysis, we find that both chair-like and boat-like configurations are dynamically stable, and the chair-like conformer is energetically more favored with an energy gain of 0.03 eV per C atom relative to the boat-like one. The chair-like and boat-like conformers are revealed to be nonmagnetic semiconductors with direct band gaps of 3.84 and 4.29 eV, respectively, both larger than 2.55 eV of pristine SiC sheet. The charge density distributions show that the bondings are characterized with covalency for both chair-like and boat-like conformers. -- Highlights: → Structural and electronic properties of fully hydrogenated SiC sheet are studied. → Both chair-like and boat-like configurations are dynamically stable. → While the chair-like conformer is energetically more favored. → The chair-like and boat-like conformers are nonmagnetic semiconductors. → The bondings are characterized with covalency.

  7. Atomic-scale models of early-stage alkali depletion and SiO2-rich gel formation in bioactive glasses.

    Science.gov (United States)

    Tilocca, Antonio

    2015-01-28

    Molecular dynamics simulations of Na(+)/H(+)-exchanged 45S5 Bioglass® models reveal that a large fraction of the hydroxyl groups introduced into the proton-exchanged, hydrated glass structure do not initially form covalent bonds with Si and P network formers but remain free and stabilised by the modifier metal cations, whereas substantial Si-OH and P-OH bonding is observed only at higher Na(+)/H(+) exchange levels. The strong affinity between free OH groups and modifier cations in the highly fragmented 45S5 glass structure appears to represent the main driving force for this effect. This suggests an alternative direct route for the formation of a repolymerised silica-rich gel in the early stages of the bioactive mechanism, not considered before, which does not require sequential repeated breakings of Si-O-Si bonds and silanol condensations.

  8. Damage formation and recovery in Fe implanted 6H–SiC

    CERN Document Server

    Miranda, Pedro; Catarino, Norberto; Lorenz, Katharina; Correia, João Guilherme; Alves, Eduardo

    2012-01-01

    Silicon carbide doped with magnetic ions such as Fe, Mn, Ni or Co could make this wide band gap semiconductor part of the diluted magnetic semiconductor family. In this study, we report the implantation of 6H-SiC single crystals with magnetic $^{56}$Fe$^{+}$ ions with an energy of 150 keV. The samples were implanted with 5E14 Fe$^+$/cm$^{2}$ and 1E16 Fe$^+$/cm$^{2}$ at different temperatures to study the damage formation and lattice site location. The samples were subsequently annealed up to 1500°C in vacuum in order to remove the implantation damage. The effect of the annealing was followed by Rutherford Backscattering/Channeling (RBS/C) measurements. The results show that samples implanted above the critical amorphization temperature reveal a high fraction of Fe incorporated into regular sites along the [0001] axis. After the annealing at 1000°C, a maximum fraction of 75%, corresponding to a total of 3.8E14 Fe$^{+}$/cm$^{2}$, was measured in regular sites along the [0001] axis. A comparison is made betwee...

  9. Neutron tolerance of advanced SiC-fiber/CVI-SiC composites

    International Nuclear Information System (INIS)

    Katoh, Y.; Kohyama, A.; Snead, L.L.; Hinoki, T.; Hasegawa, A.

    2003-01-01

    Fusion blankets employing a silicon carbide (SiC) fiber-reinforced SiC matrix composite (SiC/SiC composite) as the structural material provide attractive features represented by high cycle efficiency and extremely low induced radioactivity. Recent advancement in processing and utilization techniques and application studies in ceramic gas turbine and advanced transportation systems, SiC/SiC composites are steadily getting matured as industrial materials. Reference SiC/SiC composites for fusion structural applications have been produced by a forced-flow chemical vapor infiltration (FCVI) method using conventional and advanced near-stoichiometric SiC fibers and extensively evaluated primarily in Japan-US collaborative JUPITER program. In this work, effect of neutron irradiation at elevated temperatures on mechanical property of these composites is characterized. Unlike in conventional SiC/SiC composites, practically no property degradation was identified in advanced composites with a thin carbon interphase by a neutron fluence level of approximately 8dpa at 800C. (author)

  10. High thermal conductivity SiC/SiC composites for fusion applications -- 2

    International Nuclear Information System (INIS)

    Kowbel, W.; Tsou, K.T.; Withers, J.C.; Youngblood, G.E.

    1998-01-01

    This report covers material presented at the IEA/Jupiter Joint International Workshop on SiC/SiC Composites for Fusion Structural Applications held in conjunction with ICFRM-8, Sendai, Japan, Oct. 23--24, 1997. An unirradiated SiC/SiC composite made with MER-developed CVR SiC fiber and a hybrid PIP/CVI SiC matrix exhibited room temperature transverse thermal conductivity of 45 W/mK. An unirradiated SiC/SiC composite made from C/C composite totally CVR-converted to a SiC/SiC composite exhibited transverse thermal conductivity values of 75 and 35 W/mK at 25 and 1000 C, respectively. Both types of SiC/SiC composites exhibited non-brittle failure in flexure testing

  11. B-H Bond Activation by an Amidinate-Stabilized Amidosilylene: Non-Innocent Amidinate Ligand.

    Science.gov (United States)

    Khoo, Sabrina; Shan, Yu-Liang; Yang, Ming-Chung; Li, Yongxin; Su, Ming-Der; So, Cheuk-Wai

    2018-05-21

    The activation of B-H and B-Cl bonds in boranes by base-stabilized low-valent silicon compounds is described. The reaction of the amidinato amidosilylene-borane adduct [L{Ar(Me 3 Si)N}SiBH 3 ] [1; L = PhC(N tBu) 2 , and Ar = 2,6- iPr 2 C 6 H 3 ] with MeOTf in toluene at room temperature formed [L{Ar(Me 3 Si)N}SiBH 2 OTf] (2). [LSiN(SiMe 3 )Ar] in compound 2 then underwent a B-H bond activation with BH 2 OTf in refluxing toluene to afford the B-H bond activation product [LB(H)Si(H)(OTf){N(SiMe 3 )Ar}] (3). On the other hand, when compound 2 was reacted with 4-dimethylaminopyridine in refluxing toluene, another B-H bond activation product [(μ-κ1:κ1-L)B(H)(DMAP)Si(H){N(Ar)SiMe 3 }]OTf (4) was afforded. Mechanistic studies show that "(μ-κ1:κ1-L)B(H)(OTf)Si(H){N(Ar)SiMe 3 }" (2A) is the key intermediate in the reactions mentioned above. The formation of 2A is further evidenced by the activation of the B-Cl bond in PhBCl 2 by the amidinato silicon(I) dimer [LSi:] 2 to form the B-Cl bond activation product [(μ-κ1:κ1-L)B(Cl)(Ph)Si(Cl)] 2 (6). Compounds 2-4 and 6 were characterized by nuclear magnetic resonance spectroscopy and X-ray crystallography.

  12. The formation of super-dislocation/micropipe complexes in 6H-SiC

    Energy Technology Data Exchange (ETDEWEB)

    Giocondi, J.; Rohrer, G.S.; Skowronski, M. [Carnegie Mellon Univ., Pittsburgh, PA (United States). Dept. of Materials Science and Engineering; Balakrishna, V.; Augustine, G.; Hobgood, H.McD.; Hopkins, R.H. [Northrop Grumman Science and Technology Center, Pittsburgh PA (United States)

    1998-06-01

    Atomic force microscope images of surface/micropipe intersections on the (0001) growth surface of a 6H-SiC single crystal grown by the physical vapor transport method indicate that micropipes are associated with super-dislocations and that micron-scale deposits of a heterogeneous phase are frequently found in the vicinity of the defect. Based on our observations, we propose a model for the formation of super-dislocation/micropipe complexes that involves the coalescence of unit screw dislocations. The unit dislocations are forced together as large steps grow around heterogeneous material on the surface. (orig.) 5 refs.

  13. Physicochemical interactions resulting from the use of a SiC/SiC composite material in typical environments of future nuclear reactors

    International Nuclear Information System (INIS)

    Braun, James

    2014-01-01

    The development of high purity SiC fibers during the nineties has led to their consideration as nuclear reactors components through the use of SiC/SiC composites. SiC and SiC/SiC composites are considered as core materials of future nuclear reactors (SFR, GFR) and as a potential replacement for the zirconium cladding of PWR. Therefore, the thermochemical compatibility of these materials with typical environments of those nuclear reactors has been studied. The composition and the growth kinetics of the reaction zone of SiC towards niobium and tantalum (considered as materials to ensure the leak-tightness of a SiC/SiC cladding for GFR) have been studied between 1050 and 1500 C. High temperature heat treatments in open and closed systems between SiC and UO 2 have shown a significant reactivity over 1200 C characterized by the formation of CO and uranium silicides. Moreover, a liquid phase has been detected between 1500 and 1650 C. The exposure of SiC/SiC to liquid sodium (550 C, up to 2000 h) has been studied as a function of the oxygen concentration dissolved in liquid sodium. An improvement of the mechanical properties of the composites elaborated for this study (increase of the tensile strength and strain at failure) has been highlighted after immersion in the liquid sodium independently of its oxygen concentration. It is believed that this phenomenon is due to the presence of residual sodium in the material. (author) [fr

  14. Nanostructural Characters of β-SiC Nanoparticles Prepared from Indonesian Natural Resource using Sonochemical Method

    Science.gov (United States)

    Fuad, A.; Kultsum, U.; Taufiq, A.; Hartatiek; Latifah, E.

    2018-04-01

    Silicon carbide (SiC) nanoparticles become one of the interesting non-oxide ceramics due to their physical and chemical properties. For an extended period, SiC nanoparticles have been prepared by several methods that usually performed at high temperatures ranging from 1200 - 2000 °C from inexpensive commercial precursors. In this work, we prepared SiC nanoparticles from the low priced precursor of Indonesia natural resource using the sonochemical method at a temperature that is lower than 1000 °C. To produce samples with particular characters, we varied the sintering holding time (1, 10, and 20 hours) and the sintering temperatures (850, 950, and 1050 °C) during the synthesis. The samples were then characterized using XRD, SEM-EDX, TEM, and FTIR. The XRD data analysis showed that the samples have a dominant phase of SiC in the form of β-SiC with a 3C-SiC structure and SiO2 phase in a low composition within a good agreement with the EDX characterization. Interestingly, the sample prepared at the sintering temperature of 850 °C for 1 hour showed a non-crystallite phase. Using a Scherer’s equation, the particles of the samples sized from 13 to 18 nm, which were validated by SEM and TEM images. Furthermore, the FT-IR spectra presented several peaks, i.e., at wavenumbers of 482.2 and 1150 cm-1 representing Si-O-Si bonding and also at 798.5 cm-1 regarding with Si-C bonding.

  15. SiC/C composite sheets produced from polycarbosilane/resin/bonder mixtures. Polycarbosilane/jushi/bonder kongokei kara sakuseishita SiC/C fukugo sheet

    Energy Technology Data Exchange (ETDEWEB)

    Kawamura, K. (The National Defense Academy, Kanagawa (Japan)); Koga, J.; Iwata, T.; Yamanaka, S.; Ono, M. (Mitsubishi Materials Corp., Saitama (Japan))

    1992-02-01

    In a course of work to improve anti-oxidative property and strength of sheets of carbonic composite materials with resins, and further to produce those sheets in an industrial scale, it was tried to prepare two types of 0.4 {approximately} 0.6 m thickness SiC / C composite sheets by heat treatment of two green sheets polycarbosilane ( PCS ) / fran resin / binder type and PCS / (phenol-formaldehyde resin / binder type ) at temperature of 1200 {approximately} 1400{degree}C in an atmosphere of nitrogen. The sheets thus made were subjected to SEM observation, X-ray diffraction, measurement of density and electric resistance, and to tests on weight loss by heating and on bending. The texture of them were as tight as that of their resin carbon ( glassy carbon ). The structural feature is formation of amorphous SiO{sub 2} as a secondary product, This indicates that Si in PCS reacts with oxygen in resin during pyrolysis. The bending strength and anti-oxidative property depend on the SiC content from PCS and that the mixing effect of SiC on them are feasible when a mixing ratio of PCS / resin is higher than (2/1). 13 ref., 7 figs., 2 tabs.

  16. Thermochemical instability effects in SiC-based fibers and SiC{sub f}/SiC composites

    Energy Technology Data Exchange (ETDEWEB)

    Youngblood, G.E.; Henager, C.H.; Jones, R.H. [Pacific Northwest National Laboratory, Richland, WA (United States)

    1997-08-01

    Thermochemical instability in irradiated SiC-based fibers with an amorphous silicon oxycarbide phase leads to shrinkage and mass loss. SiC{sub f}/SiC composites made with these fibers also exhibit mass loss as well as severe mechanical property degradation when irradiated at 800{degrees}C, a temperature much below the generally accepted 1100{degrees}C threshold for thermomechanical degradation alone. The mass loss is due to an internal oxidation mechanism within these fibers which likely degrades the carbon interphase as well as the fibers in SiC{sub f}/SiC composites even in so-called {open_quotes}inert{close_quotes} gas environments. Furthermore, the mechanism must be accelerated by the irradiation environment.

  17. Effects of the curing methods on the fabrication of polycarbosilane derived SiCf/SiC composite

    International Nuclear Information System (INIS)

    Park, Ji Yeon; Kim, Weon Ju; Ryu, Woo Seog; Woo, Chang Hyun; Han, Bum Soo

    2005-01-01

    Silicon carbide has potential advantages for structural applications in the next generation energy system- VHTR, GFR and the fusion reactor due to its unique properties such as a good irradiation resistance and thermo-mechanical properties, less severe waste generation due to neutron activation and improved plant conversion efficiencies by higher operating temperatures. Among the several fabrication processes for SiC f /SiC composites, the polymer impregnation and pyrolysis (PIP) process is the only method derived from polymeric precursors. In the PIP process, the careful control of the oxygen content is important to avoid the property degradation at a high temperature because polymeric precursors are used as source materials of SiC ceramics. During the polymer precursor conversion process, unintended oxygen may be introduced for a cross-linking with producing the Si-O-Si bonds at the curing step. High oxygen content affects the degradation of the high temperature stability in SiC ceramics. Therefore, a decrease of the oxygen content is desirable to obtain SiC ceramics with the high temperature stability. One of the methods to reduce the oxygen content of polymer derived SiC ceramics is the irradiation curing process by gamma ray or electron beam. Polymer derived SiC ceramics with the low oxygen content prepared by the electron beam curing showed the improved thermal stability at a higher temperature. In this study, the electron beam (EB) and the thermal oxidation curing methods were applied to make SiC f /SiC composite using a polymer precursor, polycarbosilane (PCS) by the PIP process. And the evaluations of the curing effects, the pyrolysis behaviors and a high temperature stability were performed

  18. Development of SiC/SiC composite for fusion application

    International Nuclear Information System (INIS)

    Kohyama, A.; Katoh, Y.; Snead, L.L.; Jones, R.H.

    2001-01-01

    The recent efforts to develop SiC/SiC composite materials for fusion application under the collaboration with Japan and the USA are provided, where material performance with and without radiation damage has been greatly improved. One of the accomplishments is development of the high performance reaction sintering process. Mechanical and thermal conductivity are improved extensively by process modification and optimization with inexpensive fabrication process. The major efforts to make SiC matrix by CVI, PIP and RS methods are introduced together with the representing baseline properties. The resent results on mechanical properties of SiC/SiC under neutron irradiation are quite positive. The composites with new SiC fibers, Hi-Nicalon Type-S, did not exhibit mechanical property degradation up to 10 dpa. Based on the materials data recently obtained, a very preliminary design window is provided and the future prospects of SiC/SiC technology integration is provided. (author)

  19. Gas leak tightness of SiC/SiC composites at elevated temperature

    Energy Technology Data Exchange (ETDEWEB)

    Hayasaka, Daisuke, E-mail: hayasaka@oasis.muroran-it.ac.jp [OASIS, Muroran Institute of Technology, Muroran, Hokkaido (Japan); Graduate School of Engineering, Muroran Institute of Technology, Muroran, Hokkaido (Japan); Park, Joon-Soo. [OASIS, Muroran Institute of Technology, Muroran, Hokkaido (Japan); Kishimoto, Hirotatsu [OASIS, Muroran Institute of Technology, Muroran, Hokkaido (Japan); Graduate School of Engineering, Muroran Institute of Technology, Muroran, Hokkaido (Japan); Kohyama, Akira [OASIS, Muroran Institute of Technology, Muroran, Hokkaido (Japan)

    2016-11-01

    Highlights: • NITE-SiC/SiC has extremely densified microstructure compared with other SiC/SiC composite like CVI. • Excellent helium and hydrogen gas-leak tightness of SiC/SiC composites by DEMO-NITE method from prototype industrialization production line was presented. • The excellence against stainless steel and Zircaloy at elevated temperature, together with generic excellent properties of SiC will be inevitable for innovative blanket and divertors for DEMO- and power- fusion reactors. - Abstract: SiC/SiC composite materials are attractive candidates for high heat flux components and blanket of fusion reactor, mainly due to their high temperature properties, radiation damage tolerance and low induced radioactivity. One of the challenges for SiC/SiC application in fusion reactors is to satisfy sufficient gas leak tightness of hydrogen and helium isotopes. Although many efforts have been carried-out, SiC/SiC composites by conventional processes have not been successful to satisfy the requirements, except SiC/SiC composites by NITE-methods. Toward the early realization of SiC/SiC components into fusion reactor systems process development of NITE-process has been continued. Followed to the brief introduction of recently developed DEMO-NITE process, baseline properties and hydrogen and helium gas leak tightness is presented. SiC/SiC claddings with 10 mm in diameter and 1 mm in wall thickness are tested by gas leak tightness system developed. The leak tightness measurements are done room temperature to 400 °C. Excellent gas leak tightness equivalent or superior to Zircaloy claddings for light water fission reactors is confirmed. The excellent gas leak tightness suggests nearly perfect suppression of large gas leak path in DEMO-NITE SiC/SiC.

  20. Thermal effect of TiC in the Mo/TiC/SiC system at elevated temperature

    International Nuclear Information System (INIS)

    Roger, Jerome; Audubert, Fabienne; Le Petitcorps, Yann

    2010-01-01

    In this study, we examined the effect induced by the addition of a TiC interlayer on the stability of the Mo/SiC system at high temperature. Indeed, Mo/SiC couple is unstable at high temperature with formation of Mo 2 C and Mo 5 Si 3 C x phases. In order to limit the degradation of Mo mechanical properties, a TiC film was inserted between Mo and SiC. Samples used in this work were prepared on metallic wires substrates, SiC and TiC being deposited by CVD. The protection given by TiC layer was considered in the 1473-1673 K temperature range and for TiC thicknesses up to about 60 μm. From our results, TiC is not effective enough to mitigate C and Si atoms diffusion. Nevertheless, a notable reduction of the reaction extent is obtained at any temperatures. The so-observed effect depends on the TiC thickness and the temperature. In actual fact, TiC efficiency increases when temperature and/or TiC layer thickness increases without reaching a complete protection.

  1. Microstructure, mechanical and tribological properties of CrSiC coatings sliding against SiC and Al{sub 2}O{sub 3} balls in water

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Zhiwei [State Key Laboratory of Mechanics and Control of Mechanical Structures, Nanjing University of Aeronautics and Astronautics, Nanjing 210016 (China); College of Mechanical and Electrical Engineering, Nanjing University of Aeronautics and Astronautics and Jiangsu Key Laboratory of Precision and Micro-Manufacturing Technology, Nanjing 210016 (China); College of Mechanical and Electrical Engineering, Nanjing Forestry University, Nanjing 210037 (China); Zhou, Fei, E-mail: fzhou@nuaa.edu.cn [State Key Laboratory of Mechanics and Control of Mechanical Structures, Nanjing University of Aeronautics and Astronautics, Nanjing 210016 (China); College of Mechanical and Electrical Engineering, Nanjing University of Aeronautics and Astronautics and Jiangsu Key Laboratory of Precision and Micro-Manufacturing Technology, Nanjing 210016 (China); Chen, Kangmin [Center of Analysis, Jiangsu University, Zhenjiang 212013 (China); Wang, Qianzhi [Department of Mechanical Engineering, Keio University, Yokohama 2238522 (Japan); Zhou, Zhifeng [Advanced Coatings Applied Research Laboratory, Department of Mechanical and Biomedical Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong (China); Yan, Jiwang [Department of Mechanical Engineering, Keio University, Yokohama 2238522 (Japan); Li, Lawrence Kwok-Yan [Advanced Coatings Applied Research Laboratory, Department of Mechanical and Biomedical Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong (China)

    2016-04-15

    Graphical abstract: CrSiC coatings were speculated to be X-ray amorphous (A). Although the hardness of coatings fluctuated slightly (13.2–13.8 GPa), the CrSiC coatings showed poor wear resistance due to the decline of the crack resistance and toughness. Moreover, the friction coefficient (0.24–0.31) and the wear rate (2.97–7.66 × 10{sup −6} mm{sup 3}/Nm) of CrSiC/SiC trobopairs were lower than those of CrSiC/Al{sub 2}O{sub 3} tribopairs (B and C). - Highlights: • CrSiC coatings with Si content of 2.0–7.4 at.% were deposited via adjusting the TMS flow. • The amorphous structure in the CrSiC coatings was presented. • No obvious fluctuations of hardness (about 13 GPa) were observed with TMS flow. • CrSiC/SiC tribopairs showed better tribological performance than CrSiC/Al{sub 2}O{sub 3} tribopairs. - Abstract: CrSiC coatings with different silicon contents were prepared using unbalanced magnetron sputtering via adjusting trimethylsilane (Si(CH{sub 3}){sub 3}H) flows. Their phase structure, bonding structure, microstructure and hardness were characterized by X-ray diffraction (XRD), X-ray photoelectrons spectroscopy (XPS), a field emission scanning electron microscope (FESEM) and nano-indenter, respectively. The tribological properties of CrSiC coatings sliding against SiC and Al{sub 2}O{sub 3} balls were investigated in water. The results showed that the CrSiC coatings were speculated to be X-ray amorphous. Although the hardness of coatings fluctuated slightly (13.2–13.8 GPa), the coatings showed poor wear resistance due to the decline of the crack resistance and toughness. Moreover, the friction coefficient (0.24–0.31) and the wear rate (2.97–7.66 × 10{sup −6} mm{sup 3}/Nm) of CrSiC/SiC trobopairs were lower than those of CrSiC/Al{sub 2}O{sub 3} tribopairs.

  2. Silicon carbide modified carbon materials. Formation of nanocrystalline SiC from thermochemical processes in the system coal tar pitch/poly(carbosilane)

    Energy Technology Data Exchange (ETDEWEB)

    Czosnek, C.; Janik, J.F.; Olejniczak, Z. [Stanislaw Staszic University of Mining & Meterology, AGH, Krakow (Poland)

    2002-12-01

    Poly(carbosilane) or PCS, (-CH{sub 2}-SiH(CH{sub 3})-){sub n}, is used as a Si-bearing precursor in combination with a coal tar pitch to study thermally induced transformations toward SiC-modified carbon composites. Following mixing of the components in the molten pitch at 160{sup o}C, the mixture is heated under argon atmosphere at 500{sup o}C yielding a solid carbonizate that is further subjected to separate pyrolysis experiments at 1300{sup o}C or 1650{sup o}C. At temperatures up to 500{sup o}C, the PCS reacts with suitable pitch components as well as undergoing decomposition reactions. At higher temperatures, clusters of prevailingly nanocrystalline beta-SiC are confirmed after the 1650{sup o}C pyrolysis step with indications that the formation of the compound starts at 1300{sup o}C. Si-29 MAS NMR, XRD, FT-IR, XPS, and elemental analysis are used to characterize each pyrolysis step, especially, from the viewpoint of transformation of silicon species to silicon carbide in the carbon matrix evolved from the pitch.

  3. Oxidation of BN-coated SiC fibers in ceramic matrix composites

    International Nuclear Information System (INIS)

    Sheldon, B.W.; Sun, E.Y.

    1996-01-01

    Thermodynamic calculations were performed to analyze the simultaneous oxidation of BN and SiC. The results show that, with limited amounts of oxygen present, the formation of SiO 2 should occur prior to the formation of B 2 O 3 . This agrees with experimental observations of oxidation in glass-ceramic matrix composites with BN-coated SiC fibers, where a solid SiO 2 reaction product containing little or no boron has been observed. The thermodynamic calculations suggest that this will occur when the amount of oxygen available is restricted. One possible explanation for this behavior is that SiO 2 formation near the external surfaces of the composite closes off cracks or pores, such that vapor phase O 2 diffusion into the composite occurs only for a limited time. This indicates that BN-coated SiC fibers will not always oxidize to form significant amounts of a low-melting, borosilicate glass

  4. Effect of LaB6 on the thermal shock property of MoSi2-SiC coating for carbon/carbon composites

    International Nuclear Information System (INIS)

    Li Ting; Li Hejun; Shi Xiaohong

    2013-01-01

    Highlights: ► LaB 6 -MoSi 2 -SiC and MoSi 2 -SiC multi-composition coatings were coated on C/C composites by pack cementation. ► The microstructure and thermal shock resistance of both coatings were investigated. ► The addition of LaB 6 can increase the compactness, flexural strength and fracture toughness of the MoSi 2 -SiC coating simultaneously. ► Both coatings bond well with the substrates before and after thermal cycling oxidation between 1773 K and room temperature. ► The LaB 6 -MoSi 2 -SiC coated C/C shows better thermal shock resistance than the MoSi 2 -SiC coated C/C. - Abstract: LaB 6 -MoSi 2 -SiC and MoSi 2 -SiC coatings were prepared on the surface of carbon/carbon composites by pack cementation method. The crystal structures of the coatings were measured by X-ray diffraction. The morphologies and element distributions were also analyzed by scanning electron microscopy and energy dispersive spectroscopy, respectively. The effect of LaB 6 on the microstructure and thermal shock resistance of MoSi 2 -SiC coating was investigated. The results indicated that the LaB 6 -MoSi 2 -SiC coating possessed a denser structure and superior thermal shock resistance. After 25 times of thermal cycling oxidation between 1773 K and room temperature, the weight losses of the LaB 6 -MoSi 2 -SiC and MoSi 2 -SiC coated samples were 0.627% and 2.019%, respectively.

  5. Electrosynthesis of Ti5Si3, Ti5Si3/TiC, and Ti5Si3/Ti3SiC2 from Ti-Bearing Blast Furnace Slag in Molten CaCl2

    Science.gov (United States)

    Li, Shangshu; Zou, Xingli; Zheng, Kai; Lu, Xionggang; Chen, Chaoyi; Li, Xin; Xu, Qian; Zhou, Zhongfu

    2018-04-01

    Ti5Si3, Ti5Si3/TiC, and Ti5Si3/Ti3SiC2 have been electrochemically synthesized from the Ti-bearing blast furnace slag/TiO2 and/or C mixture precursors at a cell voltage of 3.8 V and 1223 K to 1273 K (950 °C to 1000 °C) in molten CaCl2. The pressed porous mixture pellets were used as the cathode, and a solid oxide oxygen-ion-conducting membrane (SOM)-based anode was used as the anode. The phase composition and morphologies of the cathodic products were systematically characterized. The final products possess a porous nodular microstructure due to the interconnection of particles. The variations of impurity elements, i.e., Ca, Mg, and Al, have been analyzed, and the result shows that Ca and Mg can be almost completely removed; however, Al cannot be easily removed from the pellet due to the formation of Ti-Al alloys during the electroreduction process. The electroreduction process has also been investigated by the layer-depended phase composition analysis of the dipped/partially reduced pellets to understand the detailed reaction process. The results indicate that the electroreduction process of the Ti-bearing blast furnace slag/TiO2 and/or C mixture precursors can be typically divided into four periods, i.e., (i) the decomposition of initial Ca(Mg,Al)(Si,Al)2O6, (ii) the reduction of Ti/Si-containing intermediate phases, (iii) the removal of impurity elements, and (iv) the formation of Ti5Si3, TiC, and Ti3SiC2. It is suggested that the SOM-based anode process has great potential to be used for the direct and facile preparation of Ti alloys and composites from cheap Ti-containing ores.

  6. Formation of InN atomic-size wires by simple N adsorption on the In/Si(111)–(4 × 1) surface

    International Nuclear Information System (INIS)

    Guerrero-Sánchez, J.; Takeuchi, Noboru

    2016-01-01

    Highlights: • N atoms on the surface form bonds with two In atoms and one Si atom. • Surface formation energy calculations show two stable structures with formation of InN atomic-size wires. • Projected density of states shows a tendency to form In−N and Si−N bonds on the surface. • Charge density corroborates the covalent character of the In−N bonds. - Abstract: We have carried out first principles total energy calculations to study the formation of InN atomic-size wires on the In/Si(111)–(4 × 1) surface. In its most favorable adsorption site, a single N atom forms InN arrangements. The deposit of 0.25 monolayers (MLs) of N atoms, result in the breaking of one of the original In chains and the formation of an InN atomic size wire. Increasing the coverage up to 0.5 ML of N atoms results in the formation of two of those wires. Calculated surface formation energies show that for N-poor conditions the most stable configuration is the original In/Si(111)–(4 × 1) surface with no N atoms. Increasing the N content, and in a reduced range of chemical potential, the formation of an InN wire is energetically favorable. Instead, from intermediate to N-rich conditions, two InN atomic wires are more stable. Projected density of states calculations have shown a trend to form covalent bonds between the In−p and N−p orbitals in these stable models.

  7. Recombination-induced formation of hydrogen-defect complexes in 4H and 6H-SiC: electrical and optical characterization

    International Nuclear Information System (INIS)

    Koshka, Y.; Los, A.; Mazzola, M.S.; Sankin, I.

    2003-01-01

    The phenomenon of recombination-induced passivation of defects with hydrogen was investigated in SiC polytypes. Excitation of the hydrogenated samples with above-band gap light at low temperatures resulted in formation of different non-metastable hydrogen-related luminescence centres. Electrical measurements revealed strong recombination-induced passivation of electrical activity of aluminium and boron acceptors in p-type SiC epilayers, which in some cases resulted in inversion of the conductivity type. Athermal migration of hydrogen is considered as a possible mechanism for the observed phenomena

  8. Methodology for assessing the interfacial sliding stress of a 2D woven SiC-SiC composite

    Energy Technology Data Exchange (ETDEWEB)

    Morvan, J.-M.; Baste, S. [Bordeaux-1 Univ., 33 - Talence (France)

    1999-03-01

    A micromechanical model is established to assess the value of the interfacial sliding stress as a function of the elastic and inelastic strains, the transverse crack density and the area upon which the sliding takes. The interfacial sliding stress is then measured during all the tensile test whether the damage occurs at the meso or at the microstructure level of a 2D SiC-SiC composite. The ultrasonic characterization through the complete determination of the stiffness tensor along a tensile test detects all the damage mechanisms and allows a strain partition under load which separates the various mechanisms responsible for the non-linear behavior of ceramic matrix composites (CMCs). It results that, according to the scale of the composite, the interfacial sliding stress exhibits a different value due to the nature of the bonding. (orig.) 13 refs.

  9. Magnetic behavior of Si-Ge bond in SixGe4-x nano-clusters

    Science.gov (United States)

    Nahali, Masoud; Mehri, Ali

    2018-06-01

    The structure of SixGe4-x nano-clusters were optimized by MPW1B95 level of theory using MG3S and SDB-aug-cc-PVTZ basis set. The agreement of the calculated ionization and dissociation energies with experimental values validates the reported structures of nano-clusters and justifies the use of hybrid meta density functional method. Since the Si-Si bond is stronger than Si-Ge and Ge-Ge bonds, the Si-Si, Si-Ge, and Ge-Ge diagonal bonds determine the precedence of the stability in these nano-clusters. The hybrid meta density functional calculations were carried out to investigate the adsorption of CO on all possible SixGe4-x nano-clusters. It was found that the silicon atom generally makes a stronger bond with CO than germanium and thereby preferentially affects the shape of structures having higher multiplicity. In Si-Ge structures with higher spin more than 95% of spins accumulate on positions with less bonds to other atoms of the cluster. Through CO adsorption on these clusters bridge structures are made that behave as spin bridge which conduct the spin from the nano-cluster surface to the adsorbate atoms. A better understanding of bridged structures was achieved upon introducing the 'spin bridge' concept. Based on exhaustive spin density analysis, it was found that the reason for the extra negative charge on oxygen in the bridged structures is the relocation of spin from the surface through the bridge.

  10. Effect of Carbon in Fabrication Al-SiC Nanocomposites for Tribological Application

    Directory of Open Access Journals (Sweden)

    Bartosz Hekner

    2017-06-01

    Full Text Available Aluminium-based hybrid composites are a new class of advanced materials with the potential of satisfying the demands in engineering applications. This paper describes the effects of carbon addition on the formation and properties of AMC with SiC nanoparticles reinforcement. The composites were produced via mechanical alloying followed by hot pressing. Three forms of carbon, graphite (GR, multiwalled carbon nanotubes (CNTs, and, for the first time, glassy carbon (GC, were used for the hybrid composites manufacturing and compared with tribological properties of Al-SiC composite without carbon addition. GC and CNTs enhanced formation of Al-SiC composite particles and resulted in a homogeneous distribution of reinforcing particles. On the other hand, GR addition altered mechanochemical alloying and did not lead to a proper distribution of nanoparticulate SiC reinforcement. Hot pressing technique led to the reaction between Al and carbon as well as SiC particles and caused the formation of Al4C3 and γ-Al2O3. The subsistence of carbon particles in the composites altered the predominant wear mechanisms since the wear reduction and the stabilization of the friction coefficient were observed. GC with simultaneous γ-Al2O3 formation in the hybrid Al-SiC(n-C composites turned out to be the most effective additive in terms of their tribological behaviour.

  11. Ligand-Controlled Chemoselective C(acyl)–O Bond vs C(aryl)–C Bond Activation of Aromatic Esters in Nickel Catalyzed C(sp2)–C(sp3) Cross-Couplings

    KAUST Repository

    Chatupheeraphat, Adisak

    2018-02-20

    A ligand-controlled and site-selective nickel catalyzed Suzuki-Miyaura cross-coupling reaction with aromatic esters and alkyl organoboron reagents as coupling partners was developed. This methodology provides a facile route for C(sp2)-C(sp3) bond formation in a straightforward fashion by successful suppression of the undesired β-hydride elimination process. By simply switching the phosphorus ligand, the ester substrates are converted into the alkylated arenes and ketone products, respectively. The utility of this newly developed protocol was demonstrated by its wide substrate scope, broad functional group tolerance and application in the synthesis of key intermediates for the synthesis of bioactive compounds. DFT studies on the oxidative addition step helped rationalizing this intriguing reaction chemoselectivity: whereas nickel complexes with bidentate ligands favor the C(aryl)-C bond cleavage in the oxidative addition step leading to the alkylated product via a decarbonylative process, nickel complexes with monodentate phosphorus ligands favor activation of the C(acyl)-O bond, which later generates the ketone product.

  12. Enhanced electrochemical properties of F-doped Li2MnSiO4/C for lithium ion batteries

    Science.gov (United States)

    Wang, Chao; Xu, Youlong; Sun, Xiaofei; Zhang, Baofeng; Chen, Yanjun; He, Shengnan

    2018-02-01

    The Li2MnSiO4 as a novel cathode material for lithium ion batteries, performs high specific capacity, high thermal stability, low cost and etc. However, it suffers from relatively low electronic conductivity and lithium ion diffusion rate. Herein, we successfully introduce fluorine to Li2MnSiO4 (Li2MnSiO4-xFx, x = 0.00, 0.01, 0.03 and 0.05) to overcome these obstacles. The results show that F doping not only enlarges the lattice parameters but also decreases the particle size, synergistically improving the lithium ion diffusion of Li2MnSiO4. Moreover, F doping increase electronic conductivity of Li2MnSiO4/C by inhibiting the formation of C-O bonds in the carbon layers. Meanwhile, F doping improves the crystallinity and stabilizes the crystal structure of Li2MnSiO4. Finally, the Li2MnSiO3.97F0.03/C with the best electrochemical performances delivers the initial specific discharge capacity of 279 mA h g-1 at 25mA g-1 current density from 1.5 V to 4.8 V. Also, it maintains a higher capacity (201 mA h g-1) than F-free Li2MnSiO4 (145 mA h g-1) after 50 cycles.

  13. Effect of high temperature deposition on CoSi2 phase formation

    International Nuclear Information System (INIS)

    Comrie, C. M.; Ahmed, H.; Smeets, D.; Demeulemeester, J.; Vantomme, A.; Turner, S.; Van Tendeloo, G.; Detavernier, C.

    2013-01-01

    This paper discusses the nucleation behaviour of the CoSi to CoSi 2 transformation from cobalt silicide thin films grown by deposition at elevated substrate temperatures ranging from 375 °C to 600 °C. A combination of channelling, real-time Rutherford backscattering spectrometry, real-time x-ray diffraction, and transmission electron microscopy was used to investigate the effect of the deposition temperature on the subsequent formation temperature of CoSi 2 , its growth behaviour, and the epitaxial quality of the CoSi 2 thus formed. The temperature at which deposition took place was observed to exert a significant and systematic influence on both the formation temperature of CoSi 2 and its growth mechanism. CoSi films grown at the lowest temperatures were found to increase the CoSi 2 nucleation temperature above that of CoSi 2 grown by conventional solid phase reaction, whereas the higher deposition temperatures reduced the nucleation temperature significantly. In addition, a systematic change in growth mechanism of the subsequent CoSi 2 growth occurs as a function of deposition temperature. First, the CoSi 2 growth rate from films grown at the lower reactive deposition temperatures is substantially lower than that grown at higher reactive deposition temperatures, even though the onset of growth occurs at a higher temperature, Second, for deposition temperatures below 450 °C, the growth appears columnar, indicating nucleation controlled growth. Elevated deposition temperatures, on the other hand, render the CoSi 2 formation process layer-by-layer which indicates enhanced nucleation of the CoSi 2 and diffusion controlled growth. Our results further indicate that this observed trend is most likely related to stress and changes in microstructure introduced during reactive deposition of the CoSi film. The deposition temperature therefore provides a handle to tune the CoSi 2 growth mechanism.

  14. C-H Bond Functionalization via Hydride Transfer: Formation of α-Arylated Piperidines and 1,2,3,4-Tetrahydroisoquinolines via Stereoselective Intramolecular Amination of Benzylic C-H Bonds

    OpenAIRE

    Vadola, Paul A.; Carrera, Ignacio; Sames, Dalibor

    2012-01-01

    We here report a study of the intramolecular amination of sp3 C-H bonds via the hydride transfer cyclization of N-tosylimines (HT-amination). In this transformation, 5-aryl-aldehydes are subjected to N-toluenesulfonamide in the presence of BF3•OEt2 to effect imine formation and HT-cyclization, leading to 2-aryl-piperidines and 3-aryl-1,2,3,4-tetrahydroisoquinolines in a one-pot procedure. We examined the reactivity of a range of aldehyde substrates as a function of their conformational flexib...

  15. Sintering of Si C by hot-pressing with addition of Al{sub 2}O{sub 3} and concentrate of rare earths; Sinterizacao por prensagem a quente com SiC com adicao de Al{sub 2}O{sub 3} e concentrado de terras raras

    Energy Technology Data Exchange (ETDEWEB)

    Hwang, M.K.; Silva, C.R.M. [Centro Tecnico Aeroespacial (CTA-IAE), Sao Jose dos Campos, SP (Brazil). Inst. de Atividades Espaciais]. E-mail: miriamk@iae.cta.br; Nono, M.C.A.; Vieira, R.A. [Instituto Nacional de Pesquisas Espaciais (INPE), Sao Jose dos Campos, SP (Brazil)

    2004-07-01

    Silicon carbide (SiC) has essentially covalent bonds ({approx}88%). The high covalency bond is responsible for the good mechanical properties, although it induces a low self diffusion coefficient, making densification more difficult. For a successful densification is necessary to apply pressure on the samples, and/or the addition of sintering additives, which improves the densification. In this SiC samples with alumina (Al2O3) and concentrate of rare earth (CRE) addition were sintered by hot pressing in argon atmospheric at 20 MPa of pressure, heating rate of 20 deg C/min up to 1800 deg C and a dwell time of 1 h. Initially the CRE was calcined at 1000 deg C during 1 h. After that, three mixtures were prepared with distinct concentrations in high energy mill and the samples were sintered. The aim of this work is to improve SiC densification by the liquid phase formation during sintering owing to the additives reactions between itself. The pressure intensify the driving force for densification, taking the liquid phase to drain easier through the grain boundaries, making possible best accommodation and rearrangement of the grains. The application of the pressure on the samples during sintering contributes to improve densification and becomes possible sintering in lower temperature than conventional one. The phases of the sintered samples were analyzed by X-ray diffraction and the morphology were verified by scanning electron microscopy. (author)

  16. Formation, structure, and phonon confinement effect of nanocrystalline Si1-xGex in SiO2-Si-Ge cosputtered films

    International Nuclear Information System (INIS)

    Yang, Y.M.; Wu, X.L.; Siu, G.G.; Huang, G.S.; Shen, J.C.; Hu, D.S.

    2004-01-01

    Using magnetron cosputtering of SiO 2 , Ge, and Si targets, Si-based SiO 2 :Ge:Si films were fabricated for exploring the influence of Si target proportion (P Si ) and annealing temperature (Ta) on formation, local structure, and phonon properties of nanocrystalline Si 1-x Ge x (nc-Si 1-x Ge x ). At low P Si and Ta higher than 800 deg. C, no nc-Si 1-x Ge x but a kind of composite nanocrystal consisting of a Ge core, GeSi shell, and amorphous Si outer shell is formed in the SiO 2 matrix. At moderate P Si , nc-Si 1-x Ge x begins to be formed at Ta=800 deg. C and coexists with nc-Ge at Ta=1100 deg. C. At high P Si , it was disclosed that both optical phonon frequency and lattice spacing of nc-Si 1-x Ge x increase with raising Ta. The possible origin of this phenomenon is discussed by considering three factors, the phonon confinement, strain effect, and composition variation of nc-Si 1-x Ge x . This work will be helpful in understanding the growth process of ternary GeSiO films and beneficial to further investigations on optical properties of nc-Ge 1-x Si x in the ternary matrix

  17. The development of SiC whisker fabrication technology for nuclear applications

    International Nuclear Information System (INIS)

    Kang, Thae Khapp; Kuk, Il Hiun; Lee, Jae Chun; Rhee, Chang Kyu; Lee, Ho Jin; Park, Soon Dong

    1990-02-01

    Important process factors of carbothermic process for the growth of SiC whiskers were investigated. The crystalline form of silicon dioxide, amount of carbon addition, graphite, silicon, catalysts, additive and reaction temperature were chosen as the main factors. Morphology of the resultant products was grouped into 3 different types; whisker,noodle and power types. The addition of catalyst affected in most the formation of SiC whiskers. Effects of catalyst and additive additions and reaction atmospheres on the morphology anf growth of SiC whiskers were investigated, silicon monoxide power and carbon monoxide gas were used as the raw materials. The addition of an iron containing catalyst resulted in a very long thread-like growth of the whiskers, while that of sodium chloride helical curlings. Addition of hydrogen to the non-oxidizing atmosphere enhanced the whisker formations. Crystallization of amorphous silicon monoxide raw powder was investigated at high temperatures up to 1500 deg C in Ar atmosphere using graphite crucible. Up to 900 deg C no crystallization occurred, while at 1100 - 1300 deg C silicon formation, and at 1500 deg C silicon dioxide and silicon carbide formations were detected. A slight weight loss began 1300 deg C, and the weight loss became about 33 % at 1500 deg C. After the formation reaction of SiC whiskers, the reaction products were leached by hydrofluoric acids. The optimum concentration of the hydrofluoric acid was 2 %. (author)

  18. Structural and electrical properties of the GexSi1-x/Si heterojunctions obtained by the method of direct bonding

    International Nuclear Information System (INIS)

    Argunova, T. S.; Belyakova, E. I.; Grekhov, I. V.; Zabrodskii, A. G.; Kostina, L. S.; Sorokin, L. M.; Shmidt, N. M.; Yi, J. M.; Jung, J. W.; Je, J. H.; Abrosimov, N. V.

    2007-01-01

    The results of studying the structural and electrical properties of structures produced by the method of direct bonding of Ge x Si 1-x and Si wafers are reported. The wafers were cut from the crystals grown by the Czochralski method. Continuity of the interface and the crystal-lattice defects were studied by X-ray methods using synchrotron radiation and by scanning electron microscopy. Measurements of the forward and reverse current-voltage characteristics of the p-Ge x Si 1-x /n-Si diodes made it possible to assess the effect of the crystallattice defects on the electrical properties of heterojunctions. Satisfactory electrical parameters suggest that the technology of direct bonding is promising for the fabrication of large-area Ge x Si 1-x /Si heterojunctions

  19. Dielectric Properties of SiCf/PyC/SiC Composites After Oxidation

    Institute of Scientific and Technical Information of China (English)

    SONG Huihui; ZHOU Wancheng; LUO Fa; QING Yuchang; CHEN Malin; LI Zhimin

    2016-01-01

    In this paper, the SiC fiber-reinforced SiC matrix composites with a 0.15mm thick pyrocarbon interphase (notedas SiCf/PyC/SiC) were prepared by chemical vapor infiltration (CVI). The SiCf/PyC/SiC were oxidized in air at 950℃ for 50h. The dielectric properties after this high temperature oxidation were investigated in X-band from room temperature (RT) to 700℃. Results suggested that:e' of the SiCf/PyC/SiC after oxidation increased at first then de-creased with temperature elevating;e" increased with temperature raising in the temperature range studied.

  20. Bonded exciplex formation: electronic and stereoelectronic effects.

    Science.gov (United States)

    Wang, Yingsheng; Haze, Olesya; Dinnocenzo, Joseph P; Farid, Samir; Farid, Ramy S; Gould, Ian R

    2008-12-18

    As recently proposed, the singlet-excited states of several cyanoaromatics react with pyridine via bonded-exciplex formation, a novel concept in photochemical charge transfer reactions. Presented here are electronic and steric effects on the quenching rate constants, which provide valuable support for the model. Additionally, excited-state quenching in poly(vinylpyridine) is strongly inhibited both relative to that in neat pyridine and also to conventional exciplex formation in polymers, consistent with a restrictive orientational requirement for the formation of bonded exciplexes. Examples of competing reactions to form both conventional and bonded exciplexes are presented, which illustrate the delicate balance between these two processes when their reaction energetics are similar. Experimental and computational evidence is provided for the formation of a bonded exciplex in the reaction of the singlet excited state of 2,6,9,10-tetracyanoanthracene (TCA) with an oxygen-substituted donor, dioxane, thus expanding the scope of bonded exciplexes.

  1. Effect of cutting temperature on hardness of SiC and diamond in the nano-cutting process of monocrystalline silicon

    Science.gov (United States)

    Wang, Jiachun; Li, Yuntao; Liu, Xiaoxuan; Lv, Maoqiang

    2016-10-01

    In the process of cutting silicon by natural diamond tools, groove wear happens on the flank face of cutting tool frequently.Scholars believe that one of the wear reasons is mechanical scratching effect by hard particles like SiC. To reveal the mechanical scratching mechanism, it is essential to study changes in the mechanical properties of hard particles and diamond, especially the effect of cutting temperature on hardness of diamond and hard particles. Molecular dynamics (MD) model that contact-zone temperature between tool and workpiece was calculated by dividing zone while nano-cutting monocrystalline silicon was established, cutting temperature values in different regions were computed as the simulation was carried out.On this basis, the models of molecular dynamics simulation of SiC and diamond were established separately with setting the initial temperature to room temperature. The laws of length change of C-C bond and Si-C bond varing with increase of simulation temperature were studied. And drawing on predecessors' research on theoretical calculation of hardness of covalent crystals and the relationship between crystal valence electron density and bond length, the curves that the hardness of diamond and SiC varing with bond length were obtained. The effect of temperature on the hardness was calculated. Results show that, local cutting temperature can reach 1300K.The rise in cutting temperature leaded to a decrease in the diamond local atomic clusters hardness,SiC local atomic clusters hardness increased. As the cutting temperature was more than 1100K,diamond began to soften, the local clusters hardness was less than that of SiC.

  2. Bite angle effects of diphosphines in C-C and C-X bond forming cross coupling reactions

    NARCIS (Netherlands)

    Birkholz, M.N.; Freixa, Z.; van Leeuwen, P.W.N.M.

    2009-01-01

    Catalytic reactions of C-C and C-X bond formation are discussed in this critical review with particular emphasis on cross coupling reactions catalyzed by palladium and wide bite angle bidentate diphosphine ligands. Especially those studies have been collected that allow comparison of the ligand bite

  3. Sintering of Si C by hot-pressing with addition of Al2O3 and concentrate of rare earths

    International Nuclear Information System (INIS)

    Hwang, M.K.; Silva, C.R.M.

    2004-01-01

    Silicon carbide (SiC) has essentially covalent bonds (∼88%). The high covalency bond is responsible for the good mechanical properties, although it induces a low self diffusion coefficient, making densification more difficult. For a successful densification is necessary to apply pressure on the samples, and/or the addition of sintering additives, which improves the densification. In this SiC samples with alumina (Al2O3) and concentrate of rare earth (CRE) addition were sintered by hot pressing in argon atmospheric at 20 MPa of pressure, heating rate of 20 deg C/min up to 1800 deg C and a dwell time of 1 h. Initially the CRE was calcined at 1000 deg C during 1 h. After that, three mixtures were prepared with distinct concentrations in high energy mill and the samples were sintered. The aim of this work is to improve SiC densification by the liquid phase formation during sintering owing to the additives reactions between itself. The pressure intensify the driving force for densification, taking the liquid phase to drain easier through the grain boundaries, making possible best accommodation and rearrangement of the grains. The application of the pressure on the samples during sintering contributes to improve densification and becomes possible sintering in lower temperature than conventional one. The phases of the sintered samples were analyzed by X-ray diffraction and the morphology were verified by scanning electron microscopy. (author)

  4. Synthesis, structure and chemical bonding of CaFe2−xRhxSi2 (x=0, 1.32, and 2) and SrCo2Si2

    International Nuclear Information System (INIS)

    Hlukhyy, Viktor; Hoffmann, Andrea V.; Fässler, Thomas F.

    2013-01-01

    The finding of superconductivity in Ba 0.6 K 0.4 Fe 2 As 2 put the attention on the investigation of compounds that crystallize with ThCr 2 Si 2 structure type such as AT 2 X 2 (A=alkali/alkaline earth/rare earth element; T=transition metal and X=element of the 13–15th group). In this context the silicides CaFe 2 Si 2 , CaFe 0.68(6) Rh 1.32(6) Si 2 , CaRh 2 Si 2 and SrCo 2 Si 2 have been synthesized by reaction of the elements under an argon atmosphere. Single crystals were obtained by special heat treatment in welded niobium/tantalum ampoules. The compounds were investigated by means of powder and single crystal X-ray diffraction. All compounds crystallize in the ThCr 2 Si 2 -type structure with space group I4/mmm (No. 139): a=3.939(1) Å, c=10.185(1) Å, R 1 =0.045, 85 F 2 values, 8 variable parameters for CaFe 2 Si 2 ; a=4.0590(2) Å, c=9.9390(8) Å, R 1 =0.030, 90 F 2 values, 10 variable parameters for CaFe 0.68(6) Rh 1.32(6) Si 2 ; a=4.0695(1) Å, c=9.9841(3) Å, R 1 =0.031, 114 F 2 values, 9 variable parameters for CaRh 2 Si 2 ; and a=3.974(1) Å, c=10.395(1) Å, R 1 =0.036, 95 F 2 values, 8 variable parameters for SrCo 2 Si 2 . The structure of SrCo 2 Si 2 contains isolated [Co 2 Si 2 ] 2− 2D-layers in the ab-plane whereas in CaFe 2−x Rh x Si 2 the [T 2 Si 2 ] layers (T=Fe and Rh) are interconnected along the c-axis via Si3Si bonds resulting in a three-dimentional (3D) [T 2 Si 2 ] 2− polyanions and therefore belong to the so-called collapsed form of the ThCr 2 Si 2 -type structure. The SrCo 2 Si 2 and CaRh 2 Si 2 are isoelectronic to the parent 122 iron–pnictide superconductors AeFe 2 As 2 (Ae=alkaline earth elements), whereas CaFe 2 Si 2 is a full substituted variant (As/Si) of CaFe 2 As 2 . The crystal chemistry and chemical bonding in the title compounds are discussed in terms of LMTO band structure calculations and a topological analysis using the Electron Localization Function (ELF). - Graphical abstract: The SrCo 2 Si 2 and CaFe 2−x Rh x Si

  5. The influence of nickel coating on the interface of pressureless infiltrated with vibration Al-SiC composites

    Science.gov (United States)

    Elahinejad, Setare; Sharifi, Hassan; Tayebi, Morteza; Rajaee, Ali

    2017-11-01

    The aim of this study was to investigate the effect of nickel coatings on infiltration and interface of SiC reinforced Al-Mg composite. To this end, the pressureless infiltration procedure with vibration applied to produce composites with uncoated and nickel coated reinforcements at two temperatures of 650 °C and 850 °C. The microstructure of the infiltrated cross section was investigated by optical microscopy, scanning electron microscopy, linear and point analyses. Results indicated that coated ceramic preforms improved infiltration and strong interfaces in both temperatures were achieved. Also uncoated preform infiltrated at a temperature of 650 °C, was not proved to be appropriate and it did not form any interface. In this condition a small gap was found between aluminum matrix and ceramic reinforcement, and no bonding was established between the reinforcement and matrix, however the composite prepared in 850 °C had an acceptable interface and the presence of MgAl2O4 at the interface caused improvement in interface bonding. In addition, in the composite sample with coated reinforcement, the existence of Ni as coating prevented the SiC dissolution in the alloy and there was no sign of carbide formation at the interface. At the interface of produced composite, Al3Ni and Al3Ni2 compounds were formed in the matrix around the reinforcement.

  6. Fluorine-enhanced low-temperature wafer bonding of native-oxide covered Si wafers

    Science.gov (United States)

    Tong, Q.-Y.; Gan, Q.; Fountain, G.; Enquist, P.; Scholz, R.; Gösele, U.

    2004-10-01

    The bonding energy of bonded native-oxide-covered silicon wafers treated in the HNO3/H2O/HF or the HNO3/HF solution prior to room-temperature contact is significantly higher than bonded standard RCA1 cleaned wafer pairs after low-temperature annealing. The bonding energy reaches over 2000mJ/m2 after annealing at 100 °C. The very slight etching and fluorine in the chemically grown oxide are believed to be the main contributors to the enhanced bonding energy. Transmission-electron-microscopic images have shown that the chemically formed native oxide at bonding interface is embedded with many flake-like cavities. The cavities can absorb the by-products of the interfacial reactions that result in covalent bond formation at low temperatures allowing the strong bond to be retained.

  7. 3C-SiC nanocrystal growth on 10° miscut Si(001) surface

    Energy Technology Data Exchange (ETDEWEB)

    Deokar, Geetanjali, E-mail: gitudeo@gmail.com [INSP, UPMC, CNRS UMR 7588, 4 place Jussieu, Paris F-75005 (France); D' Angelo, Marie; Demaille, Dominique [INSP, UPMC, CNRS UMR 7588, 4 place Jussieu, Paris F-75005 (France); Cavellin, Catherine Deville [INSP, UPMC, CNRS UMR 7588, 4 place Jussieu, Paris F-75005 (France); Faculté des Sciences et Technologie UPEC, 61 av. De Gaulle, Créteil F-94010 (France)

    2014-04-01

    The growth of 3C-SiC nano-crystal (NC) on 10° miscut Si(001) substrate by CO{sub 2} thermal treatment is investigated by scanning and high resolution transmission electron microscopies. The vicinal Si(001) surface was thermally oxidized prior to the annealing at 1100 °C under CO{sub 2} atmosphere. The influence of the atomic steps at the vicinal SiO{sub 2}/Si interface on the SiC NC growth is studied by comparison with the results obtained for fundamental Si(001) substrates in the same conditions. For Si miscut substrate, a substantial enhancement in the density of the SiC NCs and a tendency of preferential alignment of them along the atomic step edges is observed. The SiC/Si interface is abrupt, without any steps and epitaxial growth with full relaxation of 3C-SiC occurs by domain matching epitaxy. The CO{sub 2} pressure and annealing time effect on NC growth is analyzed. The as-prepared SiC NCs can be engineered further for potential application in optoelectronic devices and/or as a seed for homoepitaxial SiC or heteroepitaxial GaN film growth. - Highlights: • Synthesis of 3C-SiC nanocrystals epitaxied on miscut-Si using a simple technique • Evidence of domain matching epitaxy at the SiC/Si interface • SiC growth proceeds along the (001) plane of host Si. • Substantial enhancement of the SiC nanocrystal density due to the miscut • Effect of the process parameters (CO{sub 2} pressure and annealing duration)

  8. Circumferential tensile test method for mechanical property evaluation of SiC/SiC tube

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Ju-Hyeon, E-mail: 15096018@mmm.muroran-it.ac.jp [Graduate School, Muroran Institute of Technology, 27-1, Muroran, Hokkaido (Japan); Kishimoto, Hirotatsu [Graduate School, Muroran Institute of Technology, 27-1, Muroran, Hokkaido (Japan); OASIS, Muroran Institute of Technology, 27-1, Muroran, Hokkaido (Japan); Park, Joon-soo [OASIS, Muroran Institute of Technology, 27-1, Muroran, Hokkaido (Japan); Nakazato, Naofumi [Graduate School, Muroran Institute of Technology, 27-1, Muroran, Hokkaido (Japan); Kohyama, Akira [OASIS, Muroran Institute of Technology, 27-1, Muroran, Hokkaido (Japan)

    2016-11-01

    Highlights: • NITE SiC/SiC cooling channel system to be a candidate of divertor system in future. • Hoop strength is one of the important factors for a tube. • This research studies the relationship between deformation and strain of SiC/SiC tube. - Abstract: SiC fiber reinforced/SiC matrix (SiC/SiC) composite is expected to be a candidate material for the first-wall, components in the blanket and divertor of fusion reactors in future. In such components, SiC/SiC composites need to be formed to be various shapes. SiC/SiC tubes has been expected to be employed for blanket and divertor after DEMO reactor, but there is not established mechanical investigation technique. Recent progress of SiC/SiC processing techniques is likely to realize strong, having gas tightness SiC/SiC tubes which will contribute for the development of fusion reactors. This research studies the relationship between deformation and strain of SiC/SiC tube using a circumferential tensile test method to establish a mechanical property investigation method of SiC/SiC tubes.

  9. Characterization of a n+3C/n−4H SiC heterojunction diode

    Energy Technology Data Exchange (ETDEWEB)

    Minamisawa, R. A.; Mihaila, A. [Department of Power Electronics, ABB Corporate Research Center, CH-5405 Baden-Dättwil (Switzerland); Farkas, I.; Hsu, C.-W.; Janzén, E. [Semiconductor Materials, IFM, Linköping University, SE-58183 Linköping (Sweden); Teodorescu, V. S. [National Institute of Material Physics, R-077125 Bucharest-Măgurele (Romania); Afanas' ev, V. V. [Semiconductor Physics Laboratory, KU Leuven, 3001 Leuven (Belgium); Rahimo, M. [ABB Semiconductors, Fabrikstrasse 3, CH-5600 Lenzburg (Switzerland)

    2016-04-04

    We report on the fabrication of n + 3C/n-4H SiC heterojunction diodes (HJDs) potentially promising the ultimate thermal stability of the junction. The diodes were systematically analyzed by TEM, X-ray diffraction, AFM, and secondary ion mass spectroscopy, indicating the formation of epitaxial 3C-SiC crystal on top of 4H-SiC substrate with continuous interface, low surface roughness, and up to ∼7 × 10{sup 17 }cm{sup −3} dopant impurity concentration. The conduction band off-set is about 1 V as extracted from CV measurements, while the valence bands of both SiC polytypes are aligned. The HJDs feature opening voltage of 1.65 V, consistent with the barrier height of about 1.5 eV extracted from CV measurement. We finally compare the electrical results of the n + 3C/n-4H SiC heterojunction diodes with those featuring Si and Ge doped anodes in order to evaluate current challenges involved in the fabrication of such devices.

  10. Characterisation of point defects in SiC by microscopic optical spectroscopy

    International Nuclear Information System (INIS)

    Evans, G.A.

    2001-09-01

    Defects have a dramatic effect on the properties of semiconductors. In SiC, intrinsic defects can be introduced during growth or device-processing steps such as implantation. In this work electron irradiation has been used for the controlled generation of defects in SiC. The irradiated material has been annealed and subsequent low temperature photoluminescence (LTPL) measurements have been performed. A key element in this work has been the ability to perform both the irradiation and characterisation on a microscopic scale. These results have allowed a variety of new optical centres to be discovered, and have also significantly enhanced the pool of knowledge about other defect centres. Utilising low voltage irradiations has enabled the electron irradiation voltage displacement thresholds for Carbon and Silicon displacements to be investigated. In 4H-SiC the electron irradiation voltage displacement thresholds were found to be 88kV for C displacement and 225kV for Si displacement. A large number of previously unreported luminescence features have been measured in 4H, 6H and 15R-SiC material. The criteria used for comparison are the voltage threshold, annealing characteristics, spatial distribution with respect to the irradiated region, and the characteristics of associated local modes and vibronic structures. Compelling evidence has been found to support the assignment of centres in 4H and 6H-SiC to a C-C dumbbell split interstitial defect. Two high energy local modes at 133meV and 180meV are associated with these centres. In 13 C enriched 6H-SiC material the 180meV local mode splits into three components whilst the 133meV local mode splits into two components. This splitting is interpreted as being caused by isotopic substitutions between the components of the C-C dumbbell. The high energy local mode corresponds to the bonding between the two constituent atoms of the dumbbell whilst the low energy local mode is associated with the bonding between either a C 13 or 12

  11. SiC nanofibers grown by high power microwave plasma chemical vapor deposition

    International Nuclear Information System (INIS)

    Honda, Shin-ichi; Baek, Yang-Gyu; Ikuno, Takashi; Kohara, Hidekazu; Katayama, Mitsuhiro; Oura, Kenjiro; Hirao, Takashi

    2003-01-01

    Silicon carbide (SiC) nanofibers have been synthesized on Si substrates covered by Ni thin films using high power microwave chemical vapor deposition (CVD). Characterization using transmission electron microscopy (TEM) combined with electron energy-dispersive X-ray spectroscopy (EDX) revealed that the resultant fibrous nanostructures were assigned to β-SiC with high crystallinity. The formation of SiC nanofibers can be explained by the vapor liquid solid (VLS) mechanism in which precipitation of SiC occurs from the supersaturated Ni nanoparticle containing Si and C

  12. Phosphinodi(benzylsilane) PhP{(o-C6H4CH2)SiMe2H}2: a versatile "PSi2Hx" pincer-type ligand at ruthenium.

    Science.gov (United States)

    Montiel-Palma, Virginia; Muñoz-Hernández, Miguel A; Cuevas-Chávez, Cynthia A; Vendier, Laure; Grellier, Mary; Sabo-Etienne, Sylviane

    2013-09-03

    The synthesis of the new phosphinodi(benzylsilane) compound PhP{(o-C6H4CH2)SiMe2H}2 (1) is achieved in a one-pot reaction from the corresponding phenylbis(o-tolylphosphine). Compound 1 acts as a pincer-type ligand capable of adopting different coordination modes at Ru through different extents of Si-H bond activation as demonstrated by a combination of X-ray diffraction analysis, density functional theory calculations, and multinuclear NMR spectroscopy. Reaction of 1 with RuH2(H2)2(PCy3)2 (2) yields quantitatively [RuH2{[η(2)-(HSiMe2)-CH2-o-C6H4]2PPh}(PCy3)] (3), a complex stabilized by two rare high order ε-agostic Si-H bonds and involved in terminal hydride/η(2)-Si-H exchange processes. A small free energy of reaction (ΔrG298 = +16.9 kJ mol(-1)) was computed for dihydrogen loss from 3 with concomitant formation of the 16-electron species [RuH{[η(2)-(HSiMe2)-CH2-o-C6H4]PPh[CH2-o-C6H4SiMe2]}(PCy3)] (4). Complex 4 features an unprecedented (29)Si NMR decoalescence process. The dehydrogenation process is fully reversible under standard conditions (1 bar, 298 K).

  13. SiC Seeded Crystal Growth

    Science.gov (United States)

    Glass, R. C.; Henshall, D.; Tsvetkov, V. F.; Carter, C. H., Jr.

    1997-07-01

    The availability of relatively large (30 mm) SiC wafers has been a primary reason for the renewed high level of interest in SiC semiconductor technology. Projections that 75 mm SiC wafers will be available in 2 to 3 years have further peaked this interest. Now both 4H and 6H polytypes are available, however, the micropipe defects that occur to a varying extent in all wafers produced to date are seen by many as preventing the commercialization of many types of SiC devices, especially high current power devices. Most views on micropipe formation are based around Frank's theory of a micropipe being the hollow core of a screw dislocation with a huge Burgers vector (several times the unit cell) and with the diameter of the core having a direct relationship with the magnitude of the Burgers vector. Our results show that there are several mechanisms or combinations of these mechanisms which cause micropipes in SiC boules grown by the seeded sublimation method. Additional considerations such as polytype variations, dislocations and both impurity and diameter control add to the complexity of producing high quality wafers. Recent results at Cree Research, Inc., including wafers with micropipe densities of less than 1 cm - 2 (with 1 cm2 areas void of micropipes), indicate that micropipes will be reduced to a level that makes high current devices viable and that they may be totally eliminated in the next few years. Additionally, efforts towards larger diameter high quality substrates have led to production of 50 mm diameter 4H and 6H wafers for fabrication of LEDs and the demonstration of 75 mm wafers. Low resistivity and semi-insulating electrical properties have also been attained through improved process and impurity control. Although challenges remain, the industry continues to make significant progress towards large volume SiC-based semiconductor fabrication.

  14. In situ monitoring of stacking fault formation and its carrier lifetime mediation in p-type 4H-SiC

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Bin, E-mail: chenbinmse@gmail.com; Chen, Jun; Yao, Yuanzhao; Sekiguchi, Takashi [National Institute for Materials Science, Tsukuba, Ibaraki 305-0044 (Japan); Matsuhata, Hirofumi; Okumura, Hajime [National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568 (Japan)

    2014-07-28

    Using the fine control of an electron beam (e-beam) in scanning electron microscopy with the capabilities of both electrical and optical imaging, the stacking fault (SF) formation together with its tuning of carrier lifetime was in situ monitored and investigated in p-type 4H-SiC homoepitaxial films. The SFs were formed through engineering basal plane dislocations with the energy supplied by the e-beam. The e-beam intensity required for the SF formation in the p-type films was ∼100 times higher than that in the n-type ones. The SFs reduced the minority-carrier lifetime in the p-type films, which was opposite to that observed in the n-type case. The reason for the peculiar SF behavior in the p-type 4H-SiC is discussed with the cathodoluminescence results.

  15. A 19F NMR study of C-I....pi- halogen bonding

    DEFF Research Database (Denmark)

    Hauchecorne, Dieter; vand er Veken, Benjamin J.; Herrebout, Wouter A.

    2011-01-01

    The formation of halogen bonded complexes between toluene-d8 and the perfluoroiodopropanes 1-C3F7I and 2-C3F7I has been investigated using 19F NMR spectroscopy. For both Lewis acids, evidence was found for the formation of a C–I⋯π halogen bonded complex. The complex formed is a 1:1 type. Using sp...... results are supported by ab initio calculations at the B3LYP-PCM/6-311++G(d,p) + LanL2DZ∗ level....

  16. Single photoresist masking for local porous Si formation

    International Nuclear Information System (INIS)

    Hourdakis, E; Nassiopoulou, A G

    2014-01-01

    A simple process for local electrochemical porous Si formation on a Si wafer using a photoresist mask was developed. In this respect, the AZ9260 photoresist from MicroChemicals was used, which is easily removed by simple immersion in acetone after the electrochemical process. The photoresist layer thickness and its adhesion to the Si substrate were optimized for increased etch resistance to the anodization solution. Using the above process, mesoporous Si layers as thick as 50 μm were locally formed on the Si wafer through the photoresist mask. The developed process paves the way towards a simple industrial batch Si technology process for the fabrication of mixed Si wafers containing local porous Si areas. These wafers are very interesting for future system-on-chip (SoC) applications, including RF analog/digital and sensors/electronics SoCs. (technical note)

  17. Silicon Effects on Properties of Melt Infiltrated SiC/SiC Composites

    Science.gov (United States)

    Bhatt, Ramakrishna T.; Gyekenyesi, John Z.; Hurst, Janet B.

    2000-01-01

    Silicon effects on tensile and creep properties, and thermal conductivity of Hi-Nicalon SiC/SiC composites have been investigated. The composites consist of 8 layers of 5HS 2-D woven preforms of BN/SiC coated Hi-Nicalon fiber mats and a silicon matrix, or a mixture of silicon matrix and SiC particles. The Hi-Nicalon SiC/silicon and Hi-Nicalon SiC/SiC composites contained about 24 and 13 vol% silicon, respectively. Results indicate residual silicon up to 24 vol% has no significant effect on creep and thermal conductivity, but does decrease the primary elastic modulus and stress corresponding to deviation from linear stress-strain behavior.

  18. 13C Kinetic isotopic effect of polymerization on monomers with multiple bond

    International Nuclear Information System (INIS)

    Berman, E.L.; Polyakov, V.B.; Makovetskij, K.L.; Golenko, T.G.; Galimov, Eh.M.; AN SSSR, Moscow. Inst. Organicheskoj Khimii; AN SSSR, Moscow. Inst. Geokhimii i Analiticheskoj Khimii)

    1988-01-01

    13 C kinetic isotopic effect (KIE) of anionic and radical polymerization and metathesis reaction of monomers with multiple bonds are studied and correlation between the found KIE values of polymerization and the structure of transition state is established. 13 C KIE of polymerization reactions are investigated using monomers with natural content of the isotope. Polymerization was carried out using high-vacuum equipment: radical polymerization of methyl acrylate (MA) and vinyl acetate in benzene solution under the effect of benzoyl peroxide (60 deg C); anionic polymerization of MA, initiated by potassium butyl cellosolvolate, was realized in mass at 25 deg C; cyclopentene metathesis reaction was conducted in benzene under the effect of initiating system WCl 6 - (C 3 H 5 ) 2 Si(CH 3 ) 2 at -30 deg C; phenylacetylene polymers were prepared by polymerization in benzene solution at 20 deg C under the effect of WCl 6 . It is ascertained that 13 C KIE of radical and anionic polymerization of olefins and cycloolefin metathesis constitutes 2.0 -2.4%. Polymerization of compound with ternary bond is accompanied by a lower value of 13 C KIE (<1%), which is explained by double bond of reacting bond in transition state

  19. Passivation of surface-nanostructured f-SiC and porous SiC

    DEFF Research Database (Denmark)

    Ou, Haiyan; Lu, Weifang; Ou, Yiyu

    The further enhancement of photoluminescence from nanostructured fluorescent silicon carbide (f-SiC) and porous SiC by using atomic layer deposited (ALD) Al2O3 is studied in this paper.......The further enhancement of photoluminescence from nanostructured fluorescent silicon carbide (f-SiC) and porous SiC by using atomic layer deposited (ALD) Al2O3 is studied in this paper....

  20. Locally measuring the adhesion of InP directly bonded on sub-100 nm patterned Si

    International Nuclear Information System (INIS)

    Pantzas, K; Patriarche, G; Beaudoin, G; Itawi, A; Sagnes, I; Talneau, A; Bourhis, E Le; Troadec, D

    2016-01-01

    A nano-scale analogue to the double cantilever experiment that combines instrumented nano-indentation and atomic force microscopy is used to precisely and locally measure the adhesion of InP bonded on sub-100 nm patterned Si using oxide-free or oxide-mediated bonding. Surface-bonding energies of 0.548 and 0.628 J m"−"2, respectively, are reported. These energies correspond in turn to 51% and 57% of the surface bonding energy measured in unpatterned regions on the same samples, i.e. the proportion of unetched Si surface in the patterned areas. The results show that bonding on patterned surfaces can be as robust as on unpatterned surfaces, provided care is taken with the post-patterning surface preparation process and, therefore, open the path towards innovative designs that include patterns embedded in the Si guiding layer of hybrid III-V/Si photonic integrated circuits. (paper)

  1. Luminescence and Morphological Properties of GaN Layers Grown on SiC/Si(111) Substrates

    Energy Technology Data Exchange (ETDEWEB)

    Sanchez-Garcia, M.A.; Ristic, J.; Calleja, E. [ISOM and Dpto. Ing. Electronica, ETSI Telecomunicacion, Univ. Politecnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain); Perez-Rodriguez, A.; Serre, C.; Romano-Rodriguez, A.; Morante, J.R. [EME - Electronic Materials and Engineering, Department of Electronics, Universidad de Barcelona, Marti i Franques 1, 08028 Barcelona (Spain); Koegler, R.; Skorupa, W. [Institute of Ion Beam Physics and Materials Research, Forschungszentrum Rossendorf e.V., 01314 Dresden (Germany); Trampert, A.; Ploog, K.H. [Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)

    2002-08-16

    This article describes the fabrication of SiC thin films on top of Si(111) substrates by means of a multiple C-ion implantation and the subsequent growth by plasma-assisted molecular beam epitaxy of GaN layers. The stoichiometry of the top SiC layer is controlled by reactive ion etching. Photoluminescence spectra reveal that all GaN layers are under biaxial tensile strain of thermal origin. The photoluminescence efficiency clearly depends on the stoichiometry of the initial SiC layer and on whether AlN buffer layers are used or not. GaN layers grown directly on bare non-stoichiometric SiC layers exhibit the best photoluminescence efficiency but also a high degree of mosaicity, as measured by X-ray diffraction techniques. The nucleation process involved in the initial stages of the growth leads to the formation of large dislocation-free grains with a high PL efficiency and with a higher tensile strain character. Despite the lack of a perfect monocrystalline SiC substrate lattice, high quality GaN microcrystals are obtained. (Abstract Copyright[2002], Wiley Periodicals, Inc.)

  2. Vacuum brazing of aluminium metal matrix composite (55 vol.% SiC{sub p}/A356) using aluminium-based filler alloy

    Energy Technology Data Exchange (ETDEWEB)

    Niu, Jitai, E-mail: niujitai@163.com [Harbin Institute of Technology (China); Zhengzhou University (China); Luo, Xiangwei; Tian, Hao [Zhengzhou University (China); Brnic, Josip [University of Rijka (Croatia)

    2012-11-20

    Highlights: Black-Right-Pointing-Pointer The proper filler metal has been developed, especially for contents of Mg and Si. Black-Right-Pointing-Pointer The pressure device has been designed for specimen in vacuum brazing process. Black-Right-Pointing-Pointer The accurate measurement method for shear strength of lap joint has been found. Black-Right-Pointing-Pointer The brazing temperature of 560 Degree-Sign C has been optimised. Black-Right-Pointing-Pointer The micro-mechanism has been discussed for SiC{sub p}/Al composites' brazing joint. - Abstract: Aluminium matrix composites with high volume fractions of SiC particles, as the reinforcements, are potentially suitable materials for electronic packaging. These composites, due to their poor weldability, however, have very limited applications. The microstructure and shear strengths of the bonds made in 55 vol.% SiC{sub p}/A356 composite, using an aluminium based filler alloy containing Cu, Si, Mg and Ni, were investigated in this paper. The brazing temperature had a clear effect on the bond integrity, and the samples brazed at 560 Degree-Sign C demonstrated good bonding between the filler alloy and the SiC particles. The maximum shear strength achieved in this work was 102 MPa.

  3. Multilayer oxidation resistant coating for SiC coated carbon/carbon composites at high temperature

    International Nuclear Information System (INIS)

    Li Hejun; Jiao Gengsheng; Li Kezhi; Wang Chuang

    2008-01-01

    To prevent carbon/carbon (C/C) composites from oxidation, a multilayer coating based on molybdenum disilicide and titanium disilicide was formed using a two-step pack cementation technique in argon atmosphere. XRD and SEM analysis showed that the internal coating was a bond SiC layer that acts as a buffer layer, and that the external multilayer coating formed in the two-step pack cementation was composed of two MoSi 2 -TiSi 2 -SiC layers. This coating, which is characterized by excellent thermal shock resistance, could effectively protect the composites from exposure to an oxidizing atmosphere at 1773 K for 79 h. The oxidation of the coated C/C composites was primarily due to the reaction of C/C matrix and oxygen diffusing through the penetrable cracks in the coating

  4. Reaction phases and diffusion paths in SiC/metal systems

    Energy Technology Data Exchange (ETDEWEB)

    Naka, M.; Fukai, T. [Osaka Univ., Osaka (Japan); Schuster, J.C. [Vienna Univ., Vienna (Austria)

    2004-07-01

    The interface structures between SiC and metal are reviewed at SiC/metal systems. Metal groups are divided to carbide forming metals and non-carbide forming metals. Carbide forming metals form metal carbide granular or zone at metal side, and metal silicide zone at SiC side. The further diffusion of Si and C from SiC causes the formation of T ternary phase depending metal. Non-carbide forming metals form silicide zone containing graphite or the layered structure of metal silicide and metal silicide containing graphite. The diffusion path between SiC and metal are formed along tie-lines connecting SiC and metal on the corresponding ternary Si-C-M system. The reactivity of metals is dominated by the forming ability of carbide or silicide. Te reactivity tendency of elements are discussed on the periodical table of elements, and Ti among elements shows the highest reactivity among carbide forming metals. For non-carbide forming metals the reactivity sequence of metals is Fe>Ni>Co. (orig.)

  5. Interface bond relaxation on the thermal conductivity of Si/Ge core-shell nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Weifeng; He, Yan; Ouyang, Gang, E-mail: gangouy@hunnu.edu.cn [Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Synergetic Innovation Center for Quantum Effects and Applications(SICQEA), Hunan Normal University, Changsha 410081 (China); Sun, Changqing [School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore)

    2016-01-15

    The thermal conductivity of Si/Ge core-shell nanowires (CSNWs) is investigated on the basis of atomic-bond-relaxation consideration and continuum mechanics. An analytical model is developed to clarify the interface bond relaxation of Si/Ge CSNWs. It is found that the thermal conductivity of Si core can be modulated through covering with Ge epitaxial layers. The change of thermal conductivity in Si/Ge CSNWs should be attributed to the surface relaxation and interface mismatch between inner Si nanowire and outer Ge epitaxial layer. Our results are in well agreement with the experimental measurements and simulations, suggesting that the presented method provides a fundamental insight of the thermal conductivity of CSNWs from the atomistic origin.

  6. On the Mechanism of the Copper-Mediated C-S Bond Formation in the Intramolecular Disproportionation of Imine Disulfides

    Czech Academy of Sciences Publication Activity Database

    Rokob, Tibor András; Rulíšek, Lubomír; Šrogl, Jiří; Révész, Agnes; Zins, Emilie-Laure; Schröder, Detlef

    2011-01-01

    Roč. 50, č. 20 (2011), s. 9968-9979 ISSN 0020-1669 R&D Projects: GA MŠk LC512 Grant - others:European Research Council(XE) AdG HORIZOMS Institutional research plan: CEZ:AV0Z40550506 Keywords : collision-induced dissociation * DFT calculations * C-S bond formation * Cu(I) catalysis * infrared multiphoton spectroscopy Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 4.601, year: 2011

  7. Thermogravimetric and microscopic analysis of SiC/SiC materials with advanced interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Windisch, C.F. Jr.; Jones, R.H. [Pacific Northwest National Lab., Richland, WA (United States); Snead, L.L. [Oak Ridge National Lab., TN (United States)

    1997-04-01

    The chemical stability of SiC/SiC composites with fiber/matrix interfaces consisting of multilayers of SiC/SiC and porous SiC have been evaluated using a thermal gravimetric analyzer (TGA). Previous evaluations of SiC/SiC composites with carbon interfacial layers demonstrated the layers are not chemically stable at goal use temperatures of 800-1100{degrees}C and O{sub 2} concentrations greater than about 1 ppm. No measureable mass change was observed for multilayer and porous SiC interfaces at 800-1100{degrees}C and O{sub 2} concentrations of 100 ppm to air; however, the total amount of oxidizable carbon is on the order of the sensitivity of the TGA. Further studies are in progress to evaluate the stability of these materials.

  8. Si-FeSi2/C nanocomposite anode materials produced by two-stage high-energy mechanical milling

    Science.gov (United States)

    Yang, Yun Mo; Loka, Chadrasekhar; Kim, Dong Phil; Joo, Sin Yong; Moon, Sung Whan; Choi, Yi Sik; Park, Jung Han; Lee, Kee-Sun

    2017-05-01

    High capacity retention Silicon-based nanocomposite anode materials have been extensively explored for use in lithium-ion rechargeable batteries. Here we report the preparation of Si-FeSi2/C nanocomposite through scalable a two-stage high-energy mechanical milling process, in which nano-scale Si-FeSi2 powders are besieged by the carbon (graphite/amorphous phase) layer; and investigation of their structure, morphology and electrochemical performance. Raman analysis revealed that the carbon layer structure comprised of graphitic and amorphous phase rather than a single amorphous phase. Anodes fabricated with the Si-FeSi2/C showed excellent electrochemical behavior such as a first discharge capacity of 1082 mAh g-1 and a high capacity retention until the 30th cycle. A remarkable coulombic efficiency of 99.5% was achieved within a few cycles. Differential capacity plots of the Si-FeSi2/C anodes revealed a stable lithium reaction with Si for lithiation/delithiation. The enhanced electrochemical properties of the Si-FeSi2/C nanocomposite are mainly attributed to the nano-size Si and stable solid electrolyte interface formation and highly conductive path driven by the carbon layer.

  9. Switching Performance Evaluation of Commercial SiC Power Devices (SiC JFET and SiC MOSFET) in Relation to the Gate Driver Complexity

    DEFF Research Database (Denmark)

    Pittini, Riccardo; Zhang, Zhe; Andersen, Michael A. E.

    2013-01-01

    and JFETs. The recent introduction of SiC MOSFET has proved that it is possible to have highly performing SiC devices with a minimum gate driver complexity; this made SiC power devices even more attractive despite their device cost. This paper presents an analysis based on experimental results...... of the switching losses of various commercially available Si and SiC power devices rated at 1200 V (Si IGBTs, SiC JFETs and SiC MOSFETs). The comparison evaluates the reduction of the switching losses which is achievable with the introduction of SiC power devices; this includes analysis and considerations...

  10. Bond-specific reaction kinetics during the oxidation of (111) Si: Effect of n-type doping

    International Nuclear Information System (INIS)

    Gokce, B.; Aspnes, D. E.; Lucovsky, G.; Gundogdu, K.

    2011-01-01

    It is known that a higher concentration of free carriers leads to a higher oxide growth rate in the thermal oxidation of silicon. However, the role of electrons and holes in oxidation chemistry is not clear. Here, we report real-time second-harmonic-generation data on the oxidation of H-terminated (111)Si that reveal that high concentrations of electrons increase the chemical reactivity of the outer-layer Si-Si back bonds relative to the Si-H up bonds. However, the thicknesses of the natural oxides of all samples stabilize near 1 nm at room temperature, regardless of the chemical kinetics of the different bonds.

  11. Atomic oxygen adsorption and its effect on the oxidation behaviour of ZrB2-ZrC-SiC in air

    International Nuclear Information System (INIS)

    Gao Dong; Zhang Yue; Xu Chunlai; Song Yang; Shi Xiaobin

    2011-01-01

    Research highlights: → Atomic oxygen was adsorbed on the surface of ZrB 2 -ZrC-SiC ceramics. → Atomic oxygen was preferred reacted with borides according to XPS spectra. → The atomic oxygen adsorption is detrimental to the oxidation resistance. → The porosity should be the major reason which provides diffusion path for the atomic oxygen. → The structure evolution of the ceramics during oxidation is analyzed. - Abstract: Atomic oxygen is adsorbed on the surface of the hot-pressed ZrB 2 -ZrC-SiC ceramic composites, and then the ceramic composites are oxidized in air up to 1500 deg. C with the purpose of clarifying the effect of atomic oxygen adsorption on the oxidation behaviour of the ceramic composites. The XPS spectra are employed to identify the adsorption mechanism of atomic oxygen on the surface of the ceramic composites, and the formation of O-B, O-Zr, and O-Si bonds indicates that atomic oxygen is chemically adsorbed on the surface of the ceramic. In addition, atomic oxygen is preferred to be adsorbed on the surface of borides according to the Zr 3d core level spectrum. On the other hand, the atomic oxygen adsorption is detrimental to the oxidation resistance according to experimental results, and the porosity of the ceramic should be the major reason which provides diffusion path for the atomic oxygen. Furthermore, the structure evolution of the ceramic composites during oxidation process is analyzed.

  12. Highly enantioselective rhodium(I)-catalyzed carbonyl carboacylations initiated by C-C bond activation.

    Science.gov (United States)

    Souillart, Laetitia; Cramer, Nicolai

    2014-09-01

    The lactone motif is ubiquitous in natural products and pharmaceuticals. The Tishchenko disproportionation of two aldehydes, a carbonyl hydroacylation, is an efficient and atom-economic access to lactones. However, these reaction types are limited to the transfer of a hydride to the accepting carbonyl group. The transfer of alkyl groups enabling the formation of CC bonds during the ester formation would be of significant interest. Reported herein is such asymmetric carbonyl carboacylation of aldehydes and ketones, thus affording complex bicyclic lactones in excellent enantioselectivities. The rhodium(I)-catalyzed transformation is induced by an enantiotopic CC bond activation of a cyclobutanone and the formed rhodacyclic intermediate reacts with aldehyde or ketone groups to give highly functionalized lactones. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. TiC/Ti3SiC2复合材料的制备及其性能研究%Preparation and properties of TiC/Ti3SiC2 composites

    Institute of Scientific and Technical Information of China (English)

    贾换; 尹洪峰; 袁蝴蝶; 杨祎诺

    2012-01-01

    以粉末Ti,Si,TiC和炭黑为原料,采用反应热压烧结法制备TiC/Ti3SiC2复合材料.借助XRD和SEM研究TiC含量对TiC/Ti3SiC2复合材料相组成、显微结构及力学特性的影响.结果表明:通过热压烧结可以得到致密度较高的TiC/Ti3SiC2复合材料;引入TiC可以促进Ti3SiC2的生成,当引入TiC的质量分数达30%,TiC/Ti3SiC2复合材料的弯曲强度和断裂韧性分别为406.9 MPa,3.7 MPa·m1/2;复合材料中Ti3SiC2相以穿晶断裂为主,TiC晶粒易产生拔出.%TiC/Ti3SiC2 composites were fabricated by reactive hot pressing sintering method using the mixture powder of Ti, Si, C and TiC as raw material. The effect of TiC content on phase composition, microstructure and mechanical properties of TiC/Ti3SiC2 composites was investigated by X-ray diffraction and scanning electron microscopy. The results demonstrate that dense TiC/ Ti3SiC2 composites can be obtained by hot pressing. The addition of TiC into composites can enhance the formation of TisSiC2. When the additional content of TiC reaches 30% (mass fraction) , the flexural strength and fracture toughness of TiC/Ti3SiC2 composite are 406.9 MPa and 3.7 MPa·m-2, respectively. Ti3SiC2 phase displays intergranular fracture and TiC grain pulls out from Ti3SiC2 matrix when TiC/Ti3SiC2 composite fractures.

  14. Irradiation project of SiC/SiC fuel pin 'INSPIRE': Status and future plan

    International Nuclear Information System (INIS)

    Kohyama, Akira; Kishimoto, Hirotatsu

    2015-01-01

    After the March 11 Disaster in East-Japan, Research and Development towards Ensuring Nuclear Safety Enhancement for LWR becomes a top priority R and D in nuclear energy policy of Japan. The role of high temperature non-metallic materials, such as SiC/SiC, is becoming important for the advanced nuclear reactor systems. SiC fibre reinforced SiC composite has been recognised to be the most attractive option for the future, now, METI fund based project, INSPIRE, has been launched as 5-year termed project at OASIS in Muroran Institute of Technology aiming at early realisation of this system. INSPIRE is the irradiation project of SiC/SiC fuel pins aiming to accumulate material, thermal, irradiation effect data of NITE-SiC/SiC in BWR environment. Nuclear fuel inserted SiC/SiC fuel pins are planned to be installed in the Halden reactor. The project includes preparing the NITE-SiC/SiC tubes, joining of end caps, preparation of rigs to control the irradiation environment to BWR condition and the instruments to measure the condition of rigs and pins in operation. Also, basic neutron irradiation data will be accumulated by SiC/SiC coupon samples currently under irradiation in BR2. The output from this project may present the potentiality of NITE-SiC/SiC fuel cladding with the first stage fuel-cladding interaction. (authors)

  15. Microstructural evolution during transient liquid phase bonding of Inconel 617 using Ni-Si-B filler metal

    International Nuclear Information System (INIS)

    Jalilian, F.; Jahazi, M.; Drew, R.A.L.

    2006-01-01

    The influence of process parameters on microstructural characteristics of transient liquid phase (TLP) bonded Inconel 617 alloy was investigated. Experiments were carried out at 1065 deg. C using nickel based filler metal (Ni-4.5% Si-3% B) with B as the melting point depressant (MPD) element. Two different thickness of interlayer and various holding times were employed. The influence of these processing parameters on the characteristics of the joint area particularly size, morphology and composition of precipitates was investigated. The presence of MoB, Mo 2 B, M 23 C 6 , TiC, M 23 (B, C) 6 and Ni 3 B precipitates in the diffusion layer and Ni 3 B, Ni 3 Si and Ni 5 Si 2 precipitates in the interlayer at the interface between the base metal and interlayer were demonstrated using electron back scattered diffraction (EBSD), energy dispersive spectrometry (EDS) and TEM

  16. Microstructural optimization of high temperature SiC/SiC composites by nite process

    International Nuclear Information System (INIS)

    Shimoda, K.; Park, J.S.; Hinoki, T.; Kohyama, A.

    2007-01-01

    Full text of publication follows: SiC/SiC composites are one of the promising structural materials for future fusion reactor because of the excellent potentiality in thermal and mechanical properties under very severe environment including high temperature and high energy neutron bombardment. For fusion-grade SiC/SiC composites, high-crystallinity and near-stoichiometric characteristic are required to keep excellent stability against neutron irradiation. The realization of the reactor will be strongly depend on optimization of SiC/SiC composites microstructure, particularly in regard to the materials and processes used for the fiber, interphase and matrix constituents. One of the important accomplishments is the new process, called nano-particle infiltration and transient eutectic phase (NITE) process developed in our group. The microstructure of NITE-SiC/SiC composites, such as fiber volume fraction, porosity and type of pores, can be controlled precisely by the selection of sintering temperature/applied stress history. The objective of this study is to investigate thermal stability and mechanical properties of NITE-SiC/SiC composites at high-temperature. Two kinds of highly-densified SiC/SiC composites with the difference of fiber volume fraction were prepared, and were subjected to exposure tests from 1000 deg. C to 1500 deg. C in an argon-oxygen gas mixture with an oxygen partial pressure of 0.1 Pa. The thermal stability of the composites was characterized through mass change and TEM/SEM observation. The in-situ tensile tests at 1300 deg. C and 1500 deg. C were carried out in the same atmosphere. Most of SiC/SiC composites, even for the advanced CVI-SiC/SiC composites with multi-layered SiC/C inter-phases, underwent reduction in the maximum strength by about 20% at 1300 deg. C. In particular, this reduction was attributed to a slight burnout of the carbon interphase due to oxygen impurities in test atmosphere. However, there was no significant degradation for

  17. Microstructural optimization of high temperature SiC/SiC composites by nite process

    Energy Technology Data Exchange (ETDEWEB)

    Shimoda, K. [Kyoto Univ., Graduate School of Energy Science (Japan); Park, J.S. [Kyoto Univ., Institute of Advanced Energy (Japan); Hinoki, T.; Kohyama, A. [Kyoto Univ., lnstitute of Advanced Energy, Gokasho, Uji (Japan)

    2007-07-01

    Full text of publication follows: SiC/SiC composites are one of the promising structural materials for future fusion reactor because of the excellent potentiality in thermal and mechanical properties under very severe environment including high temperature and high energy neutron bombardment. For fusion-grade SiC/SiC composites, high-crystallinity and near-stoichiometric characteristic are required to keep excellent stability against neutron irradiation. The realization of the reactor will be strongly depend on optimization of SiC/SiC composites microstructure, particularly in regard to the materials and processes used for the fiber, interphase and matrix constituents. One of the important accomplishments is the new process, called nano-particle infiltration and transient eutectic phase (NITE) process developed in our group. The microstructure of NITE-SiC/SiC composites, such as fiber volume fraction, porosity and type of pores, can be controlled precisely by the selection of sintering temperature/applied stress history. The objective of this study is to investigate thermal stability and mechanical properties of NITE-SiC/SiC composites at high-temperature. Two kinds of highly-densified SiC/SiC composites with the difference of fiber volume fraction were prepared, and were subjected to exposure tests from 1000 deg. C to 1500 deg. C in an argon-oxygen gas mixture with an oxygen partial pressure of 0.1 Pa. The thermal stability of the composites was characterized through mass change and TEM/SEM observation. The in-situ tensile tests at 1300 deg. C and 1500 deg. C were carried out in the same atmosphere. Most of SiC/SiC composites, even for the advanced CVI-SiC/SiC composites with multi-layered SiC/C inter-phases, underwent reduction in the maximum strength by about 20% at 1300 deg. C. In particular, this reduction was attributed to a slight burnout of the carbon interphase due to oxygen impurities in test atmosphere. However, there was no significant degradation for

  18. Effect of strain on bond-specific reaction kinetics during the oxidation of H-terminated (111) Si

    International Nuclear Information System (INIS)

    Gokce, Bilal; Aspnes, David E.; Gundogdu, Kenan

    2011-01-01

    Although strain is used in semiconductor technology for manipulating optical, electronic, and chemical properties of semiconductors, the understanding of the microscopic phenomena that are affected or influenced by strain is still incomplete. Second-harmonic generation data obtained during the air oxidation of H-terminated (111) Si reveal the effect of compressive strain on this chemical reaction. Even small amounts of strain manipulate the reaction kinetics of surface bonds significantly, with tensile strain enhancing oxidation and compressive strain retarding it. This dramatic change suggests a strain-driven charge transfer mechanism between Si-H up bonds and Si-Si back bonds in the outer layer of Si atoms.

  19. Thermal fatigue behavior of C/C composites modified by SiC-MoSi2-CrSi2 coating

    International Nuclear Information System (INIS)

    Chu Yanhui; Fu Qiangang; Li Hejun; Li Kezhi

    2011-01-01

    Highlights: → The low-density C/C composites were modified by SiC-MoSi 2 -CrSi 2 multiphase coating by pack cementation. → The thermal fatigue behavior of the modified C/C composites was studied after undergoing thermal cycling for 20 times under the different environments. → The decrease of the flexural strength of the modified C/C composites during thermal cycle in air was primarily attributed to the partial oxidation of the modified C/C samples. - Abstract: Carbon/carbon (C/C) composites were modified by SiC-MoSi 2 -CrSi 2 multiphase coating by pack cementation, and their thermal fatigue behavior under thermal cycling in Ar and air environments was investigated. The modified C/C composites were characterized by scanning electron microscopy and X-ray diffraction. Results of tests show that, after 20-time thermal cycles between 1773 K and room temperature in Ar environment, the flexural strength of modified C/C samples decreased lightly and the percentage of remaining strength was 94.92%. While, after thermal cycling between 1773 K and room temperature in air for 20 times, the weight loss of modified C/C samples was 5.1%, and the flexural strength of the modified C/C samples reduced obviously and the percentage of remaining strength was only 75.22%. The fracture mode of modified C/C samples changed from a brittle behavior to a pseudo-plastic one as the service environment transformed from Ar to air. The decrease of the flexural strength during thermal cycle in air was primarily attributed to the partial oxidation of modified C/C samples.

  20. Immobilization of dendrimers on Si-C linked carboxylic acid-terminated monolayers on silicon(111)

    International Nuclear Information System (INIS)

    Boecking, Till; Wong, Elicia L.S.; James, Michael; Watson, Jolanta A.; Brown, Christopher L.; Chilcott, Terry C.; Barrow, Kevin D.; Coster, Hans G.L.

    2006-01-01

    Poly(amidoamine) dendrimers were attached to activated undecanoic acid monolayers, covalently linked to smooth silicon surfaces via Si-C bonds. The resulting ultra-thin dendrimer films were characterized by X-ray photoelectron spectroscopy (XPS), X-ray reflectometry (XR) and atomic force microscopy (AFM). XPS results suggested amide bond formation between the dendrimer and the surface carboxylic acid groups. XR yielded thicknesses of 10 A for the alkyl region of the undecanoic acid monolayer and 12 A for the dendrimer layer, considerably smaller than the diameter of these spherical macromolecules in solution. This was consistent with AFM images showing collapsed dendrimers on the surface. It was concluded that the deformation arose from a large number of amine groups on the surface of each dendrimer reacting efficiently with the activated surface, whereby the dendrimers can deform to fill voids while spreading over the activated surface to form a homogeneous macromolecular layer

  1. Effect of oxygen on the processes of ion beam synthesis of buried SiC layers in silicon

    International Nuclear Information System (INIS)

    Artamonov, V.V.; Valakh, M.Ya.; Klyuj, N.I.; Mel'nik, V.P.; Romanyuk, A.B.; Romanyuk, B.N.; Yukhimchuk, V.A.

    1998-01-01

    The properties of Si-structures with buried silicon carbide (SiC) layers created by high dose carbon implantation into Cz-Si or Fz-Si wafers followed by high-temperature annealing were studied by Raman and infrared spectroscopy. Effect of additional oxygen implantation on the peculiarities of SiC layer formation was also studied. It was shown that under the same implantation and post-implantation annealing conditions the buried SiC layers are more effectively formed in Cz-Si or in Si subjected to additional oxygen implantation. Thus, oxygen in silicon promotes the SiC layer formation due to SiO x precipitate creation and accommodation of the crystal volume in the region where SiC phase is formed

  2. TRISO coated fuel particles with enhanced SiC properties

    International Nuclear Information System (INIS)

    Lopez-Honorato, E.; Tan, J.; Meadows, P.J.; Marsh, G.; Xiao, P.

    2009-01-01

    The silicon carbide (SiC) layer used for the formation of TRISO coated fuel particles is normally produced at 1500-1650 deg. C via fluidized bed chemical vapor deposition from methyltrichlorosilane in a hydrogen environment. In this work, we show the deposition of SiC coatings with uniform grain size throughout the coating thickness, as opposed to standard coatings which have larger grain sizes in the outer sections of the coating. Furthermore, the use of argon as the fluidizing gas and propylene as a carbon precursor, in addition to hydrogen and methyltrichlorosilane, allowed the deposition of stoichiometric SiC coatings with refined microstructure at 1400 and 1300 deg. C. The deposition of SiC at lower deposition temperatures was also advantageous since the reduced heat treatment was not detrimental to the properties of the inner pyrolytic carbon which generally occurs when SiC is deposited at 1500 deg. C. The use of a chemical vapor deposition coater with four spouts allowed the deposition of uniform and spherical coatings.

  3. WxC-β-SiC Nanocomposite Catalysts Used in Aqueous Phase Hydrogenation of Furfural.

    Science.gov (United States)

    Rogowski, Jacek; Andrzejczuk, Mariusz; Berlowska, Joanna; Binczarski, Michal; Kregiel, Dorota; Kubiak, Andrzej; Modelska, Magdalena; Szubiakiewicz, Elzbieta; Stanishevsky, Andrei; Tomaszewska, Jolanta; Witonska, Izabela Alina

    2017-11-22

    This study investigates the effects of the addition of tungsten on the structure, phase composition, textural properties and activities of β-SiC-based catalysts in the aqueous phase hydrogenation of furfural. Carbothermal reduction of SiO₂ in the presence of WO₃ at 1550 °C in argon resulted in the formation of W x C-β-SiC nanocomposite powders with significant variations in particle morphology and content of W x C-tipped β-SiC nano-whiskers, as revealed by TEM and SEM-EDS. The specific surface area (SSA) of the nanocomposite strongly depended on the amount of tungsten and had a notable impact on its catalytic properties for the production of furfuryl alcohol (FA) and tetrahydrofurfuryl alcohol (THFA). Nanocomposite W x C-β-SiC catalysts with 10 wt % W in the starting mixture had the highest SSA and the smallest W x C crystallites. Some 10 wt % W nanocomposite catalysts demonstrated up to 90% yield of THFA, in particular in the reduction of furfural derived from biomass, although the reproducible performance of such catalysts has yet to be achieved.

  4. The chemical composition and band gap of amorphous Si:C:N:H layers

    Energy Technology Data Exchange (ETDEWEB)

    Swatowska, Barbara, E-mail: swatow@agh.edu.pl [AGH University of Science and Technology, Department of Electronics, Mickiewicza Av. 30, 30-059 Krakow (Poland); Kluska, Stanislawa; Jurzecka-Szymacha, Maria [AGH University of Science and Technology, Faculty of Materials Science and Ceramics, Mickiewicza Av. 30, 30-059 Krakow (Poland); Stapinski, Tomasz [AGH University of Science and Technology, Department of Electronics, Mickiewicza Av. 30, 30-059 Krakow (Poland); Tkacz-Smiech, Katarzyna [AGH University of Science and Technology, Faculty of Materials Science and Ceramics, Mickiewicza Av. 30, 30-059 Krakow (Poland)

    2016-05-15

    Highlights: • Six type of amorphous hydrogenated films were obtained and analysed. • Investigated chemical bondings strongly influenced energy gap values. • Analysed layers could be applied as semiconductors and also as dielectrics. - Abstract: In this work we presented the correlation between the chemical composition of amorphous Si:C:N:H layers of various content of silicon, carbon and nitrogen, and their band gap. The series of amorphous Si:C:N:H layers were obtained by plasma assisted chemical vapour deposition method in which plasma was generated by RF (13.56 MHz, 300 W) and MW (2.45 GHz, 2 kW) onto monocrystalline silicon Si(001) and borosilicate glass. Structural studies were based on FTIR transmission spectrum registered within wavenumbers 400–4000 cm{sup −1}. The presence of Si−C, Si−N, C−N, C=N, C=C, C≡N, Si−H and C−H bonds was shown. The values band gap of the layers have been determined from spectrophotometric and ellipsometric measurements. The respective values are contained in the range between 1.64 eV – characteristic for typical semiconductor and 4.21 eV – for good dielectric, depending on the chemical composition and atomic structure of the layers.

  5. Status and prospects for SiC-SiC composite materials development for fusion applications

    International Nuclear Information System (INIS)

    Sharafat, S.; Jones, R.H.; Kohyama, A.; Fenici, P.

    1995-01-01

    Silicon carbide (SiC) composites are very attractive for fusion applications because of their low afterheat and low activation characteristics coupled with excellent high temperature properties. These composites are relatively new materials that will require material development as well as evaluation of hermiticity, thermal conductivity, radiation stability, high temperature strength, fatigue, thermal shock, and joining techniques. The radiation stability of SiC-SiC composites is a critical aspect of their application as fusion components and recent results will be reported. Many of the non-fusion specific issues are under evaluation by other ceramic composite development programs, such as the US national continuous fiber ceramic composites.The current development status of various SiC-SiC composites research and development efforts is given. Effect of neutron irradiation on the properties of SiC-SiC composite between 500 and 1200 C are reported. Novel high temperature properties specific to ceramic matrix composite (CMC) materials are discussed. The chemical stability of SiC is reviewed briefly. Ongoing research and development efforts for joining CMC materials including SiC-SiC composites are described. In conclusion, ongoing research and development efforts show extremely promising properties and behavior for SiC-SiC composites for fusion applications. (orig.)

  6. Elevated Temperature Properties of Commercially Available NITE-SiC/SiC Composites

    International Nuclear Information System (INIS)

    Choi, Y.B.; Hinoki, T.; Kohyama, A.

    2007-01-01

    Full text of publication follows: Continuous fiber-reinforced ceramic matrix composites (CMCs) have been expected as a new type of material having high fracture resistance up to a high temperature. In recent years, there have been extensive efforts in our research group to develop high performance SiC/SiC composites for energy applications, where improvements in mechanical properties and damage resistance by innovative new fabrication process with emphasis on interface improvement have been greatly accomplished. One of the most outstanding accomplishments is the Nano-powder Infiltration and Transient Eutectic (NITE) process using PyC coated Tyranno-SA fibers. For making SiC/SiC composites more attractive and competitive for high temperature structural components and for other industrial applications, one of the key issues is to demonstrate its reliability and safety under severe environments. Also to demonstrate the potential to produce SiC/SiC by NITE process from large scale production line at industries is very important. This paper provides fundamental database of mechanical properties and microstructure of Cera-NITE, the trade name of NITE-SiC/SiC composites. The mechanical properties were evaluated by uni-axial tensile test from room temperature to high temperatures. The tensile properties, including elastic modulus, PLS and ultimate tensile strength, are superior to those of other conventional SiC/SiC composites. The macroscopic observation of Cera-NITE indicated high density as planned with almost no-porosity and cracks. Furthermore, Cera-NITE showed outstanding microstructural uniformity. The characteristic variation coming from the sampling location was hardly observed.. Further information about database of properties and microstructure at evaluated temperature will be provided. (authors)

  7. Formation of Si-C-N ceramics from melamine-carbosilazane single source precursors

    International Nuclear Information System (INIS)

    Shatnawi, Mazin; Al-Mansi, Wafaa; Arafa, Isam

    2008-01-01

    A series of melamine-carbosilazane pre-ceramic macromolecules (Mel-CSZs) were prepared by the condensation of melamine with different organochlorosilanes (R x SiCl 4-x where R is CH 3 /C 6 H 5 and x is 1, 2 or 3) using pyridine as a solvent under nitrogen atmosphere. These melamine-based carbosilazane macromolecules (Mel-CSZs) were characterized by infrared spectroscopy (FT-IR), mass spectrometry (MS), thermogravimetric analysis (TGA) and differential scanning calorimetry (DSC). The backbone of the resulting Mel-CSZs consists of melamine and carbosilazane building blocks. Pyrolysis of these Mel-CSZs at 600 deg. C under nitrogen and vacuum afforded the corresponding silicon-based nonoxide carbonitride ceramics (Si-C-N). The microstructure and textural morphology of the resulting fine ceramic materials were examined using FT-IR, powder X-ray diffraction (XRD), and scanning electron microscopy (SEM). - Graphical abstract: Pyrolysis of the prepared melamine-organosilane macromolecules afforded Si-C-N ceramics with different textural morphology

  8. Dangling-bond defect in a-Si:H : Characterization of network and strain effects by first-principles calculation of the EPR parameters

    NARCIS (Netherlands)

    Pfanner, G.; Freysoldt, C.; Neugebauer, J.; Inam, F.; Drabold, D.; Jarolimek, K.; Zeman, M.

    2013-01-01

    The performance of hydrogenated amorphous silicon (a-Si:H) solar cells is severely affected by the light-induced formation of metastable defects in the material (Staebler-Wronski effect). The common notion is that the dangling-bond (db) defect, a threefold coordinated silicon atom, plays a key role

  9. Reactivity of the parent amido complexes of iridium with olefins: C-NH2 bond formation versus C-H activation.

    Science.gov (United States)

    Mena, Inmaculada; García-Orduña, Pilar; Polo, Víctor; Lahoz, Fernando J; Casado, Miguel A; Oro, Luis A

    2017-08-29

    Herein we report on the different chemical reactivity displayed by two mononuclear terminal amido compounds depending on the nature of the coordinated diene. Hence, treatment of amido-bridged iridium complexes [{Ir(μ-NH 2 )(tfbb)} 3 ] (1; tfbb = tetrafluorobenzobarrelene) with dppp (dppp = bis(diphenylphosphane)propane) leads to the rupture of the amido bridges forming the mononuclear terminal amido compound [Ir(NH 2 )(dppp)(tfbb)] (3) in the first stage. On changing the reaction conditions, the formation of a C-NH 2 bond between the amido moiety and the coordinated diene is observed and a new dinuclear complex [{Ir(1,2-η 2 -4-κ-C 12 H 8 F 4 N)(dppp)} 2 (μ-dppp)] (4) has been isolated. On the contrary, the diiridium amido-bridged complex [{Ir(μ-NH 2 )(cod)} 2 ] (2; cod = 1,5-cyclooctadiene) in the presence of dppb (dppb = bis(diphenylphosphane)butane) allows the isolation of a mononuclear complex [Ir(1,2,3-η 3 -6-κ-C 8 H 10 )H(dppb)] (5), as a consequence of the extrusion of ammonia. The monitoring of the reaction of 2 with dppb (and dppp) allowed us to detect terminal amido complexes [Ir(NH 2 )(P-P)(cod)] (P-P = dppb (6), dppp (7)) in solution, as confirmed by an X-ray analysis of 7. Complex 7 was observed to evolve into hydrido species 5 at room temperature. DFT studies showed that C-H bond activation occurs through the deprotonation of one methylene fragment of the cod ligand by the highly basic terminal amido moiety instead of C-H oxidative addition to the Ir(i) center.

  10. Molecular dynamics study on interfacial thermal conductance of unirradiated and irradiated SiC/C

    International Nuclear Information System (INIS)

    Wang, Qingyu; Wang, Chenglong; Zhang, Yue; Li, Taosheng

    2014-01-01

    SiC f /SiC composite materials have been considered as candidate structural materials for several types of advanced nuclear reactors. Both experimental and computer simulations studies have revealed the degradation of thermal conductivity for this material after irradiation. The objective of this study is to investigate the effect of SiC/graphite interface structure and irradiation on the interfacial thermal conductance by using molecular dynamics simulation. Five SiC/graphite composite models were created with different interface structures, and irradiation was introduced near the interfaces. Thermal conductance was calculated by means of reverse-NEMD method. Results show that there is a positive correlation between the interfacial energy and interfacial C–Si bond quantity, and irradiated models showed higher interfacial energy compared with their unirradiated counterparts. Except the model with graphite atom plane parallel to the interface, the interfacial thermal conductance of unirradiated and irradiated (1000 eV) models, increases as the increase of interfacial energy, respectively. For all irradiated models, lattice defects are of importance in impacting the interfacial thermal conductance depending on the interface structure. For the model with graphite layer parallel to the interface, the interfacial thermal conductance increased after irradiation, for the other models the interfacial thermal conductance decreased. The vibrational density of states of atoms in the interfacial region was calculated to analyze the phonon mismatch at the interface

  11. Chemical compatibility issues associated with use of SiC/SiC in advanced reactor concepts

    Energy Technology Data Exchange (ETDEWEB)

    Wilson, Dane F. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

    2015-09-01

    Silicon carbide/silicon carbide (SiC/SiC) composites are of interest for components that will experience high radiation fields in the High Temperature Gas Cooled Reactor (HTGR), the Very High Temperature Reactor (VHTR), the Sodium Fast Reactor (SFR), or the Fluoride-cooled High-temperature Reactor (FHR). In all of the reactor systems considered, reactions of SiC/SiC composites with the constituents of the coolant determine suitability of materials of construction. The material of interest is nuclear grade SiC/SiC composites, which consist of a SiC matrix [high-purity, chemical vapor deposition (CVD) SiC or liquid phase-sintered SiC that is crystalline beta-phase SiC containing small amounts of alumina-yttria impurity], a pyrolytic carbon interphase, and somewhat impure yet crystalline beta-phase SiC fibers. The interphase and fiber components may or may not be exposed, at least initially, to the reactor coolant. The chemical compatibility of SiC/SiC composites in the three reactor environments is highly dependent on thermodynamic stability with the pure coolant, and on reactions with impurities present in the environment including any ingress of oxygen and moisture. In general, there is a dearth of information on the performance of SiC in these environments. While there is little to no excess Si present in the new SiC/SiC composites, the reaction of Si with O2 cannot be ignored, especially for the FHR, in which environment the product, SiO2, can be readily removed by the fluoride salt. In all systems, reaction of the carbon interphase layer with oxygen is possible especially under abnormal conditions such as loss of coolant (resulting in increased temperature), and air and/ or steam ingress. A global outline of an approach to resolving SiC/SiC chemical compatibility concerns with the environments of the three reactors is presented along with ideas to quickly determine the baseline compatibility performance of SiC/SiC.

  12. Hard TiCx/SiC/a-C:H nanocomposite thin films using pulsed high energy density plasma focus device

    International Nuclear Information System (INIS)

    Umar, Z.A.; Rawat, R.S.; Tan, K.S.; Kumar, A.K.; Ahmad, R.; Hussain, T.; Kloc, C.; Chen, Z.; Shen, L.; Zhang, Z.

    2013-01-01

    Highlights: •The energetic ions and electron beams are used to synthesize TiC x /SiC/a-C:H films. •As-deposited crystalline and hard nanocomposite TiC x /SiC/a-C:H films are synthesized. •Very high average deposition rates of 68 nm/shot are achieved using dense plasma focus. •The maximum hardness of 22 GPa is achieved at the surface of the film. -- Abstract: Thin films of TiC x /SiC/a-C:H were synthesized on Si substrates using a complex mix of high energy density plasmas and instability accelerated energetic ions of filling gas species, emanated from hot and dense pinched plasma column, in dense plasma focus device. The conventional hollow copper anode of Mather type plasma focus device was replaced by solid titanium anode for synthesis of TiC x /SiC/a-C:H nanocomposite thin films using CH 4 :Ar admixture of (1:9, 3:7 and 5:5) for fixed 20 focus shots as well as with different number of focus shots with fixed CH 4 :Ar admixture ratio 3:7. XRD results showed the formation of crystalline TiC x /SiC phases for thin film synthesized using different number of focus shots with CH 4 :Ar admixture ratio fixed at 3:7. SEM results showed that the synthesized thin films consist of nanoparticle agglomerates and the size of agglomerates depended on the CH 4 :Ar admixture ratio as well as on the number of focus shots. Raman analysis showed the formation of polycrystalline/amorphous Si, SiC and a-C for different CH 4 :Ar ratio as well as for different number of focus shots. The XPS analysis confirmed the formation of TiC x /SiC/a-C:H composite thin film. Nanoindentation results showed that the hardness and elastic modulus values of composite thin films increased with increasing number of focus shots. Maximum values of hardness and elastic modulus at the surface of the composite thin film were found to be about 22 and 305 GPa, respectively for 30 focus shots confirming the successful synthesis of hard composite TiC x /SiC/a-C:H coatings

  13. Formation of C-C and C-O bonds and oxygen removal in reactions of alkanediols, alkanols, and alkanals on copper catalysts.

    Science.gov (United States)

    Sad, María E; Neurock, Matthew; Iglesia, Enrique

    2011-12-21

    This study reports evidence for catalytic deoxygenation of alkanols, alkanals, and alkanediols on dispersed Cu clusters with minimal use of external H(2) and with the concurrent formation of new C-C and C-O bonds. These catalysts selectively remove O-atoms from these oxygenates as CO or CO(2) through decarbonylation or decarboxylation routes, respectively, that use C-atoms present within reactants or as H(2)O using H(2) added or formed in situ from CO/H(2)O mixtures via water-gas shift. Cu catalysts fully convert 1,3-propanediol to equilibrated propanol-propanal intermediates that subsequently form larger oxygenates via aldol-type condensation and esterification routes without detectable involvement of the oxide supports. Propanal-propanol-H(2) equilibration is mediated by their chemisorption and interconversion at surfaces via C-H and O-H activation and propoxide intermediates. The kinetic effects of H(2), propanal, and propanol pressures on turnover rates, taken together with measured selectivities and the established chemical events for base-catalyzed condensation and esterification reactions, indicate that both reactions involve kinetically relevant bimolecular steps in which propoxide species, acting as the base, abstract the α-hydrogen in adsorbed propanal (condensation) or attack the electrophilic C-atom at its carbonyl group (esterification). These weakly held basic alkoxides render Cu surfaces able to mediate C-C and C-O formation reactions typically catalyzed by basic sites inherent in the catalyst, instead of provided by coadsorbed organic moieties. Turnover rates for condensation and esterification reactions decrease with increasing Cu dispersion, because low-coordination corner and edge atoms prevalent on small clusters stabilize adsorbed intermediates and increase the activation barriers for the bimolecular kinetically relevant steps required for both reactions. © 2011 American Chemical Society

  14. Microstructural evolution during transient liquid phase bonding of Inconel 617 using Ni-Si-B filler metal

    Energy Technology Data Exchange (ETDEWEB)

    Jalilian, F. [McGill University, Department of Mining, Metals and Materials Engineering, 3610 University St., M.H. Wong Building, Montreal Que., H3A 2B2 (Canada); Jahazi, M. [Aerospace Manufacturing Technology Center, National Research Council of Canada (Canada); Drew, R.A.L. [McGill University, Department of Mining, Metals and Materials Engineering, 3610 University St., M.H. Wong Building, Montreal Que., H3A 2B2 (Canada)]. E-mail: robin.drew@mcgill.ca

    2006-05-15

    The influence of process parameters on microstructural characteristics of transient liquid phase (TLP) bonded Inconel 617 alloy was investigated. Experiments were carried out at 1065 deg. C using nickel based filler metal (Ni-4.5% Si-3% B) with B as the melting point depressant (MPD) element. Two different thickness of interlayer and various holding times were employed. The influence of these processing parameters on the characteristics of the joint area particularly size, morphology and composition of precipitates was investigated. The presence of MoB, Mo{sub 2}B, M{sub 23}C{sub 6}, TiC, M{sub 23}(B, C){sub 6} and Ni{sub 3}B precipitates in the diffusion layer and Ni{sub 3}B, Ni{sub 3}Si and Ni{sub 5}Si{sub 2} precipitates in the interlayer at the interface between the base metal and interlayer were demonstrated using electron back scattered diffraction (EBSD), energy dispersive spectrometry (EDS) and TEM.

  15. Wafer-level integration of NiTi shape memory alloy on silicon using Au–Si eutectic bonding

    International Nuclear Information System (INIS)

    Gradin, Henrik; Bushra, Sobia; Braun, Stefan; Stemme, Göran; Van der Wijngaart, Wouter

    2013-01-01

    This paper reports on the wafer level integration of NiTi shape memory alloy (SMA) sheets with silicon substrates through Au–Si eutectic bonding. Different bond parameters, such as Au layer thicknesses and substrate surface treatments were evaluated. The amount of gold in the bond interface is the most important parameter to achieve a high bond yield; the amount can be determined by the barrier layers between the Au and Si or by the amount of Au deposition. Deposition of a gold layer of more than 1 μm thickness before bonding gives the most promising results. Through patterning of the SMA sheet and by limiting bonding to small areas, stresses created by the thermal mismatch between Si and NiTi are reduced. With a gold layer of 1 μm thickness and bond areas between 200 × 200 and 800 × 800 μm 2 a high bond strength and a yield above 90% is demonstrated. (paper)

  16. Conversion of wood flour/SiO2/phenolic composite to porous SiC ceramic containing SiC whiskers

    Directory of Open Access Journals (Sweden)

    Li Zhong

    2013-01-01

    Full Text Available A novel wood flour/SiO2/phenolic composite was chosen to be converted into porous SiC ceramic containing SiC whiskers via carbothermal reduction. At 1550°C the composite is converted into porous SiC ceramic with pore diameters of 10~40μm, and consisting of β-SiC located at the position of former wood cell walls. β-SiC wire-like whiskers of less than 50 nm in diameter and several tens to over 100 μm in length form within the pores. The surface of the resulting ceramic is coated with β-SiC necklace-like whiskers with diameters of 1~2μm.

  17. Radiation effects and micromechanics of SiC/SiC composites

    International Nuclear Information System (INIS)

    Ghoniem, N.M.

    1992-01-01

    The basic displacement damage process in SiC has been fully explored, and the mechanisms identified. Major modifications have been made to the theory of damage dosimetry in Fusion, Fission and Ion Simulation studies of Sic. For the first time, calculations of displacements per atoms in SiC can be made in any irradiation environment. Applications to irradiations in fusion first wall neutron spectra (ARIES and PROMETHEUS) as well as in fission spectra (HIFIR and FFTF) are given. Nucleation of helium-filled cavities in SiC was studied, using concepts of stability theory to determine the size of the critical nucleus under continuous generation of helium and displacement damage. It is predicted that a bimodal distribution of cavity sizes is likely to occur in heavily irradiated SiC. A study of the chemical compatibility of SiC composite structures with fusion reactor coolants at high-temperatures was undertaken. It was shown that SiC itself is chemically very stable in helium coolants in the temperature range 500--1000 degree C. However, current fiber/matrix interfaces, such as C and BN are not. The fracture mechanics of high-temperature matrix cracks with bridging fibers is now in progress. A fundamentally unique approach to study the propagation and interaction of cracks in a composite was initiated. The main focus of our research during the following period will be : (1) Theory and experiments for the micro-mechanics of high-temperature failure; and (2) Analysis of radiation damage and microstructure evolution

  18. Electron irradiation-induced defects in {beta}-SiC

    Energy Technology Data Exchange (ETDEWEB)

    Oshima, Ryuichiro [Osaka Prefectural Univ., Sakai (Japan). Reseach Inst. for Advanced Science and Technology

    1996-04-01

    To add information of point defects in cubic crystal SiC, polycrystal {beta}-SiC on the market was used as sample and irradiated by neutron and electron. In situ observation of neutron and electron irradiation-induced defects in {beta}-SiC were carried out by ultra high-voltage electronic microscope (UHVEM) and ordinary electronic microscope. The obtained results show that the electron irradiation-induced secondary defects are micro defects less than 20 nm at about 1273K, the density of defects is from 2x10{sup 17} to 1x10{sup 18}/cc, the secondary defects may be hole type at high temperature and the preexistant defects control nuclear formation of irradiation-induced defects, effective sink. (S.Y.)

  19. Spectroscopic and calorimetric investigation of short and intermediate-range structures and energetics of amorphous SiCO, SiCN, and SiBCN polymer-derived ceramics

    Science.gov (United States)

    Widgeon, Scarlett J.

    transport properties such as electrical conductivity and viscosity may show power-law dependence on composition near and above the percolation threshold of the SiOC network or that of the free-carbon phase. Si(B)CN PDCs with different carbon contents were synthesized by pyrolysis of poly(boro)silylcarbodiimides and poly(boro)silazane precursors and their structure and energetics were studied using multi-nuclear, one- and two- dimensional NMR spectroscopy and oxide melt solution calorimetry. The structure of the polysilylcarbodiimide-derived SiCN PDCs at lower carbon content and pyrolysis temperatures (800 oC) consists of amorphous nanodomains of sp2 carbon and silicon nitride with an interfacial bonding between N, C and Si atoms that is stabilized by the presence of hydrogen. The interfacial Si-C and N-C bonds are destroyed with concomitant hydrogen loss upon increasing the pyrolysis temperature to 1100 oC. Calorimetry results demonstrate that the mixed bonding in the interfacial regions play a key role in the thermodynamic stabilization of these PDCs. The size of the carbon domains increases with increasing carbon content until a continuous amorphous carbon matrix is formed with 55-60 wt % C. The polyborosilylcarbodiimide-derived SiBCN ceramics contain carbon and silicon nitride nanodomains with the BN domains being present predominantly at the interface. In contrast, the structure of the polyborosilazane-derived ceramics consists of significant amount of mixed bonding in the nearest-neighbor coordination environments of Si and B atoms leading to the formation of SiC xN4-x tetrahedral units and BCN2 triangular units. The interfacial region between the SiCN and C nanodomains is occupied by the BCN phase. These results demonstrate that the chemistry of the polymeric precursors exerts major influence on the microstructure and bonding in their derived ceramics.

  20. Structural, elastic, electronic, bonding, and optical properties of BeAZ2 (A = Si, Ge, Sn; Z = P, As) chalcopyrites

    International Nuclear Information System (INIS)

    Fahad, Shah; Murtaza, G.; Ouahrani, T.; Khenata, R.; Yousaf, Masood; Omran, S.Bin; Mohammad, Saleh

    2015-01-01

    A first principles density functional theory (DFT) technique is used to study the structural, chemical bonding, electronic and optical properties of BeAZ 2 (A = Si, Ge, Sn; Z = P, As) chalcopyrite materials. The calculated parameters are in good agreement with the available experimental results. The lattice constants and the equilibrium volume increased as we moved from Si to Ge to Sn, whereas the c/a and internal parameters u decreased by shifting the cation from P to As. These compounds are elastically stable. An investigation of the band gap using the WC-GGA, EV-GGA, PBE-GGA and mBJ-metaGGA potentials suggested that BeSiP 2 and BeSiAs 2 are direct band gap compounds, whereas BeGeP 2, BeGeAs 2, BeSnP 2, BeSnAs 2 are indirect band gap compounds. The energy band gaps decreased by changing B from Si to Sn and increased by changing the anion C from P to As. The bonding among the cations and anions is primarily ionic. In the optical properties, the real and imaginary parts of the dielectric functions, reflectivity and optical conductivity have been studied over a wide energy range. - Highlights: • The compounds are studied by FP-LAPW method within mBJ approximation. • All of the studied materials show isotropic behaviour. • All the compounds show direct band gap nature. • Bonding nature is mostly covalent among the studied compounds. • High absorption peaks and reflectivity ensures there utility in optoelectronic devices

  1. Temperature dependence of dark current of pSi-n(Si2)1-x(CdS)x structures

    International Nuclear Information System (INIS)

    Usmonov, Sh.N.

    2007-01-01

    Full text: The research of influence of isovalent impurity on electric and photo-electric properties of semiconductors where formative with semiconductor continuous solid solutions (CSS) of substitution presents both the fundamental and the applied application interest at the area of material science and photoelectrical properties of semiconductors. In the given work results of experimental researches (Si 2 ) 1-x (CdS) x epitaxial layers grown on c-Si substrates by a method liquid phase epitaxy are presented. The grown layers had thickness and ∼ 10 micron, n-type of conductivity with specific resistance 0,016 Ohm sm. Dependences of the dark current of pSi-n(Si 2 ) 1-x (CdS) x structures have been investigated at various values of a bias voltage. In experiment it was observed anomaly dependence of current. The current with arising of temperature begun monotonously aroused and reached some minimal value at temperature 100 C and then again starts to arise up to temperature 200 C. Arising of dark current is caused of the band-to-band thermal generation of electron-hole pairs. The voltage drop at the temperature 100 C is caused by the recharging of impurity atoms CdS. It is known, that width of the forbidden band of CdS Eg,CdS=2,48 eV more than Eg,Si=1,1 eV. Covalent bond of atoms CdS is stronger than Si-Si bond. However, when the molecule of CdS replaces two atoms of silicon in tetrahedral lattice of silicon the bonds of Cd-S become weak under influence of surrounding atoms of silicon. It causes to occurrence impurity level CdS located on Ei=1,2 eV below a valence band top of silicon. The generation of electron-hole pairs with participation of CdS impurities at the 100 C temperature is occurred under action thermal phonons. However, holes formed on impurity levels are localized and they will be recombination centers. Therefore drop of the dark current caused by dispersion of carriers on impurity centers. (authors)

  2. Oxide Structure Dependence of SiO2/SiOx/3C-SiC/n-Type Si Nonvolatile Resistive Memory on Memory Operation Characteristics

    Science.gov (United States)

    Yamaguchi, Yuichiro; Shouji, Masatsugu; Suda, Yoshiyuki

    2012-11-01

    We have investigated the dependence of the oxide layer structure of our previously proposed metal/SiO2/SiOx/3C-SiC/n-Si/metal metal-insulator-semiconductor (MIS) resistive memory device on the memory operation characteristics. The current-voltage (I-V) measurement and X-ray photoemission spectroscopy results suggest that SiOx defect states mainly caused by the oxidation of 3C-SiC at temperatures below 1000 °C are related to the hysteresis memory behavior in the I-V curve. By restricting the SiOx interface region, the number of switching cycles and the on/off current ratio are more enhanced. Compared with a memory device formed by one-step or two-step oxidation of 3C-SiC, a memory device formed by one-step oxidation of Si/3C-SiC exhibits a more restrictive SiOx interface with a more definitive SiO2 layer and higher memory performances for both the endurance switching cycle and on/off current ratio.

  3. Multi-center vs. two-center bonding within the hetero-polyanion in Eu{sub 2}GaPt{sub 2} and its prototype Ca{sub 2}SiIr{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Poettgen, Rainer [Institut fuer Anorganische und Analytische Chemie, Universitaet Muenster (Germany); Borrmann, Horst; Grin, Yuri [Max-Planck-Institut fuer Chemische Physik fester Stoffe, Dresden (Germany)

    2017-11-17

    The compound Eu{sub 2}GaPt{sub 2} was synthesized from the elements in a sealed tantalum tube. Its Ca{sub 2}SiIr{sub 2}-type crystal structure was refined from single-crystal X-ray diffraction data: space group C2/c, a = 9.8775(6), b = 5.8621(6), c = 7.9677(5) Aa, β = 102.257(4) , R{sub F} = 0.039, 1344 observed reflections, and 25 variable parameters. The platinum (iridium) atoms in Eu{sub 2}GaPt{sub 2} and Ca{sub 2}SiIr{sub 2} form linear chains of dumbbells [2c(Pt-Pt) or 2c(Ir-Ir) bonds, respectively]. These chains are interconnected to 2D polyanions in Eu{sub 2}GaPt{sub 2} by the gallium atoms forming 4c(Ga-Pt-Ga-Pt) or by silicon atoms forming 2c(Si-Ir) bonds in Ca{sub 2}SiIr{sub 2}. The polyanion bonds to the europium (calcium) matrix via the pseudo lone-pairs at the gallium (silicon) atoms. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  4. Thermophysical and mechanical properties of SiC/SiC composites

    International Nuclear Information System (INIS)

    Zinkle, S.J.; Snead, L.L.

    1998-01-01

    The key thermophysical and mechanical properties for SiC/SiC composites are summarized, including temperature-dependent tensile properties, elastic constants, thermal conductivity, thermal expansion, and specific heat. The effects of neutron irradiation on the thermal conductivity and dimensional stability (volumetric swelling, creep) of SiC is discussed. The estimated lower and upper temperatures limits for structural applications in high power density fusion applications are 400 and 1000 C due to thermal conductivity degradation and void swelling considerations, respectively. Further data are needed to more accurately determine these estimated temperature limits

  5. Ultraclean Si/Si interface formation by surface preparation and direct bonding in ultrahigh vacuum

    DEFF Research Database (Denmark)

    Hermansson, Karin; Grey, Francois; Bengtsson, Stefan

    1998-01-01

    Silicon surfaces have been cleaned and bonded in ultrahigh vacuum, at a pressure in the 10(-10) Torr range. The bonded interfaces show extremely low contamination levels as measured by secondary ion mass spectroscopy. Nevertheless, a potential barrier could be detected at the interface by spreading...

  6. Fabrication and Mechanical Properties of SiCw(p/SiC-Si Composites by Liquid Si Infiltration using Pyrolysed Rice Husks and SiC Powders as Precursors

    Directory of Open Access Journals (Sweden)

    Dan Zhu

    2014-03-01

    Full Text Available Dense silicon carbide (SiC matrix composites with SiC whiskers and particles as reinforcement were prepared by infiltrating molten Si at 1550 °C into porous preforms composed of pyrolysed rice husks (RHs and extra added SiC powder in different ratios. The Vickers hardness of the composites showed an increase from 18.6 to 21.3 GPa when the amount of SiC added in the preforms was 20% (w/w, and then decreased to 17.3 GPa with the increase of SiC added in the preforms up to 80% (w/w. The values of flexural strength of the composites initially decreased when 20% (w/w SiC was added in the preform and then increased to 587 MPa when the SiC concentration reached 80% (w/w. The refinement of SiC particle sizes and the improvement of the microstructure in particle distribution of the composites due to the addition of external SiC played an effective role in improving the mechanical properties of the composites.

  7. RIR MAPLE procedure for deposition of carbon rich Si/C/H films

    International Nuclear Information System (INIS)

    Dřínek, Vladislav; Strašák, Tomáš; Novotný, Filip; Fajgar, Radek; Bastl, Zdeněk

    2014-01-01

    We applied the resonant infrared matrix assisted pulsed laser evaporation (RIR MAPLE) technique to demonstrate a new approach to a controlled deposition of carbon rich amorphous Si/C/H film. In absence of radicals and accelerated species commonly generated in PECVD and sputtering setups, the RIR MAPLE method does not decompose precursor molecules. Moreover, unlike the standard MAPLE procedure, in which solvent molecules absorb laser energy from excimer or near infrared lasers, we applied the pulsed TEA CO 2 laser to excite the dendrimer precursor molecules in a frozen target. In this manner we achieved just cross-linking of the starting precursor on substrates and the deposition of carbon rich Si/C/H film. The film was analyzed by Fourier Transformed Infrared (FTIR), UV/VIS, Raman and X-ray Photoelectron (XPS) spectroscopy and Atomic Force Microscopy (AFM) technique. According to analyses the film retained the precursor elemental composition free of graphitic (sp 2 ) clusters. In course of reaction only the peripheral allyl groups containing C=C bonds were opened to achieve cross-linking. Whereas annealing to 300 °C was necessary for the elimination of =C–H 1 , 2 bonds in the films prepared at 200 °C, those bonds vanished completely for the films prepared at substrate temperature 255 °C. The film posseses a smooth surface with root mean square (RMS) parameter up to 10 nm within scanned distance 2.5 μm.

  8. RIR MAPLE procedure for deposition of carbon rich Si/C/H films

    Energy Technology Data Exchange (ETDEWEB)

    Dřínek, Vladislav, E-mail: drinek@icpf.cas.cz [Institute of Chemical Process Fundamentals of the ASCR, v. v. i., Rozvojova 135, 165 02 Prague 6 (Czech Republic); Strašák, Tomáš [Institute of Chemical Process Fundamentals of the ASCR, v. v. i., Rozvojova 135, 165 02 Prague 6 (Czech Republic); Novotný, Filip [Faculty of Nuclear Sciences and Physical Engineering, Czech Technical University, 115 19 Prague (Czech Republic); Fajgar, Radek [Institute of Chemical Process Fundamentals of the ASCR, v. v. i., Rozvojova 135, 165 02 Prague 6 (Czech Republic); Bastl, Zdeněk [J. Heyrovsky Institute of Physical Chemistry of the ASCR, v. v. i., Dolejškova 2155/3, 182 23 Prague 8 (Czech Republic)

    2014-02-15

    We applied the resonant infrared matrix assisted pulsed laser evaporation (RIR MAPLE) technique to demonstrate a new approach to a controlled deposition of carbon rich amorphous Si/C/H film. In absence of radicals and accelerated species commonly generated in PECVD and sputtering setups, the RIR MAPLE method does not decompose precursor molecules. Moreover, unlike the standard MAPLE procedure, in which solvent molecules absorb laser energy from excimer or near infrared lasers, we applied the pulsed TEA CO{sub 2} laser to excite the dendrimer precursor molecules in a frozen target. In this manner we achieved just cross-linking of the starting precursor on substrates and the deposition of carbon rich Si/C/H film. The film was analyzed by Fourier Transformed Infrared (FTIR), UV/VIS, Raman and X-ray Photoelectron (XPS) spectroscopy and Atomic Force Microscopy (AFM) technique. According to analyses the film retained the precursor elemental composition free of graphitic (sp{sup 2}) clusters. In course of reaction only the peripheral allyl groups containing C=C bonds were opened to achieve cross-linking. Whereas annealing to 300 °C was necessary for the elimination of =C–H{sub 1}, {sub 2} bonds in the films prepared at 200 °C, those bonds vanished completely for the films prepared at substrate temperature 255 °C. The film posseses a smooth surface with root mean square (RMS) parameter up to 10 nm within scanned distance 2.5 μm.

  9. Influence of silicon dangling bonds on germanium thermal diffusion within SiO{sub 2} glass

    Energy Technology Data Exchange (ETDEWEB)

    Barba, D.; Martin, F.; Ross, G. G. [INRS Centre for Energy, Materials and Telecommunications, 1650 Boul. Lionel-Boulet, Varennes, Québec J3X 1S2 (Canada); Cai, R. S.; Wang, Y. Q. [The Cultivation Base for State Key Laboratory, Qingdao University, Qingdao 266071 (China); Demarche, J.; Terwagne, G. [LARN, Centre de Recherche en Physique de la Matière et du Rayonnement (PMR), University of Namur (FUNDP), B-5000 Namur (Belgium); Rosei, F. [INRS Centre for Energy, Materials and Telecommunications, 1650 Boul. Lionel-Boulet, Varennes, Québec J3X 1S2 (Canada); Center for Self-Assembled Chemical Structures, McGill University, Montreal, Quebec H3A 2K6 (Canada)

    2014-03-17

    We study the influence of silicon dangling bonds on germanium thermal diffusion within silicon oxide and fused silica substrates heated to high temperatures. By using scanning electron microscopy and Rutherford backscattering spectroscopy, we determine that the lower mobility of Ge found within SiO{sub 2}/Si films can be associated with the presence of unsaturated SiO{sub x} chemical bonds. Comparative measurements obtained by x-ray photoelectron spectroscopy show that 10% of silicon dangling bonds can reduce Ge desorption by 80%. Thus, the decrease of the silicon oxidation state yields a greater thermal stability of Ge inside SiO{sub 2} glass, which could enable to considerably extend the performance of Ge-based devices above 1300 K.

  10. Modulating the Surface State of SiC to Control Carrier Transport in Graphene/SiC.

    Science.gov (United States)

    Jia, Yuping; Sun, Xiaojuan; Shi, Zhiming; Jiang, Ke; Liu, Henan; Ben, Jianwei; Li, Dabing

    2018-05-28

    Silicon carbide (SiC) with epitaxial graphene (EG/SiC) shows a great potential in the applications of electronic and photoelectric devices. The performance of devices is primarily dependent on the interfacial heterojunction between graphene and SiC. Here, the band structure of the EG/SiC heterojunction is experimentally investigated by Kelvin probe force microscopy. The dependence of the barrier height at the EG/SiC heterojunction to the initial surface state of SiC is revealed. Both the barrier height and band bending tendency of the heterojunction can be modulated by controlling the surface state of SiC, leading to the tuned carrier transport behavior at the EG/SiC interface. The barrier height at the EG/SiC(000-1) interface is almost ten times that of the EG/SiC(0001) interface. As a result, the amount of carrier transport at the EG/SiC(000-1) interface is about ten times that of the EG/SiC(0001) interface. These results offer insights into the carrier transport behavior at the EG/SiC heterojunction by controlling the initial surface state of SiC, and this strategy can be extended in all devices with graphene as the top layer. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. The effect of SiC particle size on the properties of Cu–SiC composites

    International Nuclear Information System (INIS)

    Celebi Efe, G.; Zeytin, S.; Bindal, C.

    2012-01-01

    Graphical abstract: The relative densities of Cu–SiC composites sintered at 700 °C for 2 h are ranged from 97.3% to 91.8% for SiC with 1 μm particle size and 97.5% to 95.2% for SiC with 5 μm particle size, microhardness of composites ranged from 143 to 167 HV for SiC having 1 μm particle size and 156–182 HVN for SiC having 5 μm particle size and the electrical conductivity of composites changed between 85.9% IACS and 55.7% IACS for SiC with 1 μm particle size, 87.9% IACS and 65.2%IACS for SiC with 5 μm particle size. It was found that electrical conductivity of composites containing SiC with 5 μm particle size is better than that of Cu–SiC composites containing SiC with particle size of 1 μm. Highlights: ► In this research, the effect of SiC particle size on some properties of Cu–SiC composites were investigated. ► The mechanical properties were improved. ► The electrical properties were obtained at desirable level. -- Abstract: SiC particulate-reinforced copper composites were prepared by powder metallurgy (PM) method and conventional atmospheric sintering. Scanning electron microscope (SEM), X-ray diffraction (XRD) techniques were used to characterize the sintered composites. The effect of SiC content and particle size on the relative density, hardness and electrical conductivity of composites were investigated. The relative densities of Cu–SiC composites sintered at 700 °C for 2 h are ranged from 97.3% to 91.8% for SiC with 1 μm particle size and from 97.5% to 95.2% for SiC with 5 μm particle size. Microhardness of composites ranged from 143 to 167 HV for SiC having 1 μm particle size and from 156 to 182 HV for SiC having 5 μm particle size. The electrical conductivity of composites changed between 85.9% IACS and 55.7% IACS for SiC with 1 μm particle size, between 87.9% IACS and 65.2% IACS for SiC with 5 μm particle size.

  12. Development of High-Temperature, High-Power, High-Efficiency, High-Voltage Converters Using Silicon Carbide (SiC) Delivery Order 0003: SiC High Voltage Converters, N-Type Ohmic Contract Development for SiC Power Devices

    National Research Council Canada - National Science Library

    Cheng, Lin; Mazzola, Michael S

    2006-01-01

    ... ? SiC interfaces and silicide top surfaces is important for producing uniformly low contact resistances to achieve device operation at high-current levels without hot spot formation and contact degradation...

  13. Characterization of SiC in DLC/a-Si films prepared by pulsed filtered cathodic arc using Raman spectroscopy and XPS

    International Nuclear Information System (INIS)

    Srisang, C.; Asanithi, P.; Siangchaew, K.; Pokaipisit, A.; Limsuwan, P.

    2012-01-01

    DLC/a-Si films were deposited on germanium substrates. a-Si film was initially deposited as a seed layer on the substrate using DC magnetron sputtering. DLC film was then deposited on the a-Si layer via a pulsed filtered cathodic arc (PFCA) system. In situ ellipsometry was used to monitor the thicknesses of the growth films, allowing a precise control over the a-Si and DLC thicknesses of 6 and 9 nm, respectively. It was found that carbon atoms implanting on a-Si layer act not only as a carbon source for DLC formation, but also as a source for SiC formation. The Raman peak positions at 796 cm -1 and 972 cm -1 corresponded to the LO and TO phonon modes of SiC, respectively, were observed. The results were also confirmed using TEM, XPS binding energy and XPS depth profile analysis.

  14. Effect of Si3N4 Addition on Oxidation Resistance of ZrB2-SiC Composites

    Directory of Open Access Journals (Sweden)

    Manab Mallik

    2017-06-01

    Full Text Available The oxidation behavior of ZrB2-20 vol % SiC and ZrB2-20 vol % SiC-5 vol % Si3N4 composites prepared by hot-pressing and subjected to isothermal exposure at 1200 or 1300 °C for durations of 24 or 100 h in air, as well as cyclic exposure at 1300 °C for 24 h, have been investigated. The oxidation resistance of the ZrB2-20 vol % SiC composite has been found to improve by around 20%–25% with addition of 5 vol % Si3N4 during isothermal or cyclic exposures at 1200 or 1300 °C. This improvement in oxidation resistance has been attributed to the formation of higher amounts of SiO2 and Si2N2O, as well as a greater amount of continuity in the oxide scale, because these phases assist in closing the pores and lower the severity of cracking by exhibiting self-healing type behavior. For both the composites, the mass changes are found to be higher during cyclic exposure at 1300 °C by about 2 times compared to that under isothermal conditions.

  15. Fiber/matrix interfaces for SiC/SiC composites: Multilayer SiC coatings

    Energy Technology Data Exchange (ETDEWEB)

    Halverson, H.; Curtin, W.A. [Virginia Polytechnic Institute and State Univ., Blacksburg, VA (United States)

    1996-08-01

    Tensile tests have been performed on composites of CVI SiC matrix reinforced with 2-d Nicalon fiber cloth, with either pyrolitic carbon or multilayer CVD SiC coatings [Hypertherm High-Temperature Composites Inc., Huntington Beach, CA.] on the fibers. To investigate the role played by the different interfaces, several types of measurements are made on each sample: (i) unload-reload hysteresis loops, and (ii) acoustic emission. The pyrolitic carbon and multilayer SiC coated materials are remarkably similar in overall mechanical responses. These results demonstrate that low-modulus, or compliant, interface coatings are not necessary for good composite performance, and that complex, hierarchical coating structures may possibly yield enhanced high-temperature performance. Analysis of the unload/reload hysteresis loops also indicates that the usual {open_quotes}proportional limit{close_quotes} stress is actually slightly below the stress at which the 0{degrees} load-bearing fibers/matrix interfaces slide and are exposed to atmosphere.

  16. Simulation, microstructure and microhardness of the nano-SiC coating formed on Al surface via laser shock processing

    International Nuclear Information System (INIS)

    Cui, C.Y.; Cui, X.G.; Zhao, Q.; Ren, X.D.; Zhou, J.Z.; Liu, Z.; Wang, Y.M.

    2014-01-01

    Highlights: • Nano-SiC coating is successfully fabricated on pure Al surface via LSPC. • Movement states of the nano-SiC particles are analyzed by FEM. • Formation mechanism of the nano-SiC coating is put forward and discussed. • Microhardness of the Al is significantly improved due to the nano-SiC coating. - Abstract: A novel method, laser shock processing coating (LSPC), has been developed to fabricate a particle-reinforced coating based on laser shock processing (LSP). In this study, a nano-SiC coating is successfully prepared on pure Al surface via LSPC. The surface and cross section morphologies as well as the compositions of nano-SiC coating are investigated. Moreover, a finite element method (FEM) is employed to clarify the formation process of nano-SiC coating. On the basis of the above analyzed results, a possible formation mechanism of the nano-SiC coating is tentatively put forward and discussed. Furthermore, the nano-SiC coating shows superior microhardness over the Al substrate

  17. Investigation of γ-radiation defect formation at the Si-SiO2 interface

    International Nuclear Information System (INIS)

    Zaynabidinov, S.; Yulchiev, Sh.; Aliev, R.

    2004-01-01

    Full text: In work the results of an experimental research of process radiating defects formation on border are submitted undressed Si-SiO 2 at γ-radiation of the silicon MOS structures. As against similar researches the basic attention is given on the analysis of generation-recombination characteristics of structures, that allowed to establish character of the defects formation both on border undressed Si-SiO 2 , and in about border of Si. In experiments the structures received by thermal oxidation at T=1000 deg. C in environment of dry oxygen n-Si substrates with specific resistance ρ=0.3 Ω·cm are used. The thickness of oxygen layer made ∼0.1 μm. The test MOS-structures with an aluminium electrode and area ∼0.01 cm 2 irradiated with γ-quanta from the 60 Co source by a dose of 10 6 rad. The choice of a dose of an radiation is caused by that at such dose the essential increase of concentration of superficial defects is observed, and at the same time there are no significant changes of parameters of a substrate because of formation of point defects in volume of silicon. The generation characteristics of structures such, as speed of superficial generation s and time of life τ g of carriers of a charge in about surface before and after an radiation defined by a method isothermal relaxation of nonequilibrium high-frequency capacity. The relaxation of nonequilibrium capacity registered at submission on translating structure in a condition of deeper inversion. Such mode of measurement allows to neglect the contribution which is brought in recharged of superficial condition in superficial generation currents. Are received relaxation dependence of structures before and after an radiation, and also spectra of distribution of density of superficial condition on width of the forbidden zone Si dN ss /dE. The increase at 12-15 of time of concentration of superficial condition with E=E c -(0.18±0.03) eV in the irradiated structures is established. Such condition is

  18. WxC-β-SiC Nanocomposite Catalysts Used in Aqueous Phase Hydrogenation of Furfural

    Directory of Open Access Journals (Sweden)

    Jacek Rogowski

    2017-11-01

    Full Text Available This study investigates the effects of the addition of tungsten on the structure, phase composition, textural properties and activities of β-SiC-based catalysts in the aqueous phase hydrogenation of furfural. Carbothermal reduction of SiO2 in the presence of WO3 at 1550 °C in argon resulted in the formation of WxC-β-SiC nanocomposite powders with significant variations in particle morphology and content of WxC-tipped β-SiC nano-whiskers, as revealed by TEM and SEM-EDS. The specific surface area (SSA of the nanocomposite strongly depended on the amount of tungsten and had a notable impact on its catalytic properties for the production of furfuryl alcohol (FA and tetrahydrofurfuryl alcohol (THFA. Nanocomposite WxC-β-SiC catalysts with 10 wt % W in the starting mixture had the highest SSA and the smallest WxC crystallites. Some 10 wt % W nanocomposite catalysts demonstrated up to 90% yield of THFA, in particular in the reduction of furfural derived from biomass, although the reproducible performance of such catalysts has yet to be achieved.

  19. Tailoring of SiC nanoprecipitates formed in Si

    Energy Technology Data Exchange (ETDEWEB)

    Velisa, G., E-mail: gihan.velisa@cea.fr [CEA, DEN, Service de Recherches de Métallurgie Physique, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France); Horia Hulubei National Institute for Physics and Nuclear Engineering, P.O. Box MG-6, 077125 Magurele (Romania); Trocellier, P. [CEA, DEN, Service de Recherches de Métallurgie Physique, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France); Thomé, L. [Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse, UMR8609, Bât. 108, 91405 Orsay (France); Vaubaillon, S. [CEA, INSTN, UEPTN, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France); Miro, S.; Serruys, Y.; Bordas, É. [CEA, DEN, Service de Recherches de Métallurgie Physique, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France); Meslin, E. [CEA, DEN, Service de Recherches de Métallurgie Physique, F-91191 Gif-sur-Yvette (France); Mylonas, S. [Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse, UMR8609, Bât. 108, 91405 Orsay (France); Coulon, P.E. [Ecole Polytechnique, Laboratoire des Solides Irradiés, CEA/DSM/IRAMIS-CNRS, 91128 Palaiseau Cedex (France); Leprêtre, F.; Pilz, A.; Beck, L. [CEA, DEN, Service de Recherches de Métallurgie Physique, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France)

    2013-07-15

    The SiC synthesis through single-beam of C{sup +}, and simultaneous-dual-beam of C{sup +} and Si{sup +} ion implantations into a Si substrate heated at 550 °C has been studied by means of three complementary analytical techniques: nuclear reaction analysis (NRA), Raman, and transmission electron microscopy (TEM). It is shown that a broad distribution of SiC nanoprecipitates is directly formed after simultaneous-dual-beam (520-keV C{sup +} and 890-keV Si{sup +}) and single-beam (520-keV C{sup +}) ion implantations. Their shape appear as spherical (average size ∼4–5 nm) and they are in epitaxial relationship with the silicon matrix.

  20. Specimen size effect considerations for irradiation studies of SiC/SiC

    Energy Technology Data Exchange (ETDEWEB)

    Youngblood, G.E.; Henager, C.H. Jr.; Jones, R.H. [Pacific Northwest National Lab., Richland, WA (United States)

    1996-10-01

    For characterization of the irradiation performance of SiC/SiC, limited available irradiation volume generally dictates that tests be conducted on a small number of relatively small specimens. Flexure testing of two groups of bars with different sizes cut from the same SiC/SiC plate suggested the following lower limits for flexure specimen number and size: Six samples at a minimum for each condition and a minimum bar size of 30 x 6.0 x 2.0 mm{sup 3}.

  1. Theoretical modelling of tip effects in the pushing manipulation of C60 on the Si(001) surface

    International Nuclear Information System (INIS)

    Martsinovich, N; Kantorovich, L

    2008-01-01

    We present the results of our theoretical studies on the repulsive (pushing) manipulation of a C 60 molecule on the Si(001) surface with several scanning tunnelling microscopy tips. We show that, for silicon tips, tip-C 60 bonds are formed even with tips that do not initially have dangling bonds, and this tip-C 60 interaction drives the manipulation of the molecule. The details of the atomic structure of the tip and its position relative to the molecule do not have a significant effect on the mechanism and the sequence of adsorption configurations during the pushing manipulation of C 60 along the trough, where the trough itself provides a guiding effect. The pushing manipulation is thus a very robust process that occurs largely independently of the tip structure. On the other hand, the pushing manipulation across an Si-Si dimer row into the neighbouring trough proceeds in a more complex way, with tip deformation and detachment more likely to occur. We demonstrate the role of tip deformation and tip-molecule bond rearrangement in the continuous manipulation of the molecule. Finally, we calculate and analyse the forces acting on the tip during manipulation and identify characteristic patterns

  2. Radicals and ions controlling by adjusting the antenna-substrate distance in a-Si:H deposition using a planar ICP for c-Si surface passivation

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, H.P., E-mail: haipzhou@uestc.edu.cn [School of Energy Science and Engineering, University of Electronic Science and Technology of China, 2006 Xiyuan Ave., West High-Tech Zone, Chengdu, Sichuan, 611731 (China); Plasma Sources and Application Center, NIE, and Institute of Advanced Studies, Nanyang Technological University, 637616 (Singapore); Xu, S., E-mail: shuyan.xu@nie.edu.sg [Plasma Sources and Application Center, NIE, and Institute of Advanced Studies, Nanyang Technological University, 637616 (Singapore); Xu, M. [Key Laboratory of Information Materials of Sichuan Province & School of Electrical and Information Engineering, Southwest University for Nationalities, Chengdu, 610041 (China); Xu, L.X.; Wei, D.Y. [Plasma Sources and Application Center, NIE, and Institute of Advanced Studies, Nanyang Technological University, 637616 (Singapore); Xiang, Y. [School of Energy Science and Engineering, University of Electronic Science and Technology of China, 2006 Xiyuan Ave., West High-Tech Zone, Chengdu, Sichuan, 611731 (China); Xiao, S.Q. [Key Laboratory of Advanced Process Control for Light Industry (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi, 214122 (China)

    2017-02-28

    Highlights: • A planar ICP was used to grow a-Si:H films for c-Si surface passivation. • The direct- and remote-plasma was compared for high-quality c-Si surface passivation. • The remote ICP with controlled plasma species and ion bombardments is preferable for the surface passivation of c-Si. - Abstract: Being a key issue in the research and fabrication of silicon heterojunction (SHJ) solar cells, crystalline silicon (c-Si) surface passivation is theoretically and technologically intricate due to its complicate dependence on plasma characteristics, material properties, and plasma-material interactions. Here amorphous silicon (a-Si:H) grown by a planar inductively coupled plasma (ICP) reactor working under different antenna-substrate distances of d was used for the surface passivation of low-resistivity p-type c-Si. It is found that the microstructures (i.e., the crystallinity, Si-H bonding configuration etc.) and passivation function on c-Si of the deposited a-Si:H were profoundly influenced by the parameter of d, which primarily determines the types of growing precursors of SiH{sub n}/H contributing to the film growth and the interaction between the plasma and growing surface. c-Si surface passivation is analyzed in terms of the d-dependent a-Si:H properties and plasma characteristics. The controlling of radical types and ion bombardment on the growing surface through adjusting parameter d is emphasized.

  3. Direct approaches to nitriles via highly efficient nitrogenation strategy through C-H or C-C bond cleavage.

    Science.gov (United States)

    Wang, Teng; Jiao, Ning

    2014-04-15

    Because of the importance of nitrogen-containing compounds in chemistry and biology, organic chemists have long focused on the development of novel methodologies for their synthesis. For example, nitrogen-containing compounds show up within functional materials, as top-selling drugs, and as bioactive molecules. To synthesize these compounds in a green and sustainable way, researchers have focused on the direct functionalization of hydrocarbons via C-H or C-C bond cleavage. Although researchers have made significant progress in the direct functionalization of simple hydrocarbons, direct C-N bond formation via C-H or C-C bond cleavage remains challenging, in part because of the unstable character of some N-nucleophiles under oxidative conditions. The nitriles are versatile building blocks and precursors in organic synthesis. Recently, chemists have achieved the direct C-H cyanation with toxic cyanide salts in the presence of stoichiometric metal oxidants. In this Account, we describe recent progress made by our group in nitrile synthesis. C-H or C-C bond cleavage is a key process in our strategy, and azides or DMF serve as the nitrogen source. In these reactions, we successfully realized direct nitrile synthesis using a variety of hydrocarbon groups as nitrile precursors, including methyl, alkenyl, and alkynyl groups. We could carry out C(sp(3))-H functionalization on benzylic, allylic, and propargylic C-H bonds to produce diverse valuable synthetic nitriles. Mild oxidation of C═C double-bonds and C≡C triple-bonds also produced nitriles. The incorporation of nitrogen within the carbon skeleton typically involved the participation of azide reagents. Although some mechanistic details remain unclear, studies of these nitrogenation reactions implicate the involvement of a cation or radical intermediate, and an oxidative rearrangement of azide intermediate produced the nitrile. We also explored environmentally friendly oxidants, such as molecular oxygen, to make our

  4. Coordination-resolved local bond contraction and electron binding-energy entrapment of Si atomic clusters and solid skins

    Energy Technology Data Exchange (ETDEWEB)

    Bo, Maolin; Huang, Yongli; Zhang, Ting [Key Laboratory of Low-Dimensional Materials and Application Technologies, Xiangtan University, Hunan 411105 (China); Wang, Yan, E-mail: ywang8@hnust.edu.cn, E-mail: ecqsun@ntu.edu.sg [Key Laboratory of Low-Dimensional Materials and Application Technologies, Xiangtan University, Hunan 411105 (China); School of Information and Electronic Engineering, Hunan University of Science and Technology, Hunan 411201 (China); Zhang, Xi [School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore); Li, Can [Center for Coordination Bond Engineering, School of Materials Science and Engineering, China Jiliang University, Hangzhou 330018 (China); Sun, Chang Q., E-mail: ywang8@hnust.edu.cn, E-mail: ecqsun@ntu.edu.sg [Key Laboratory of Low-Dimensional Materials and Application Technologies, Xiangtan University, Hunan 411105 (China); School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore); Center for Coordination Bond Engineering, School of Materials Science and Engineering, China Jiliang University, Hangzhou 330018 (China)

    2014-04-14

    Consistency between x-ray photoelectron spectroscopy measurements and density-function theory calculations confirms our bond order-length-strength notation-incorporated tight-binding theory predictions on the quantum entrapment of Si solid skin and atomic clusters. It has been revealed that bond-order deficiency shortens and strengthens the Si-Si bond, which results in the local densification and quantum entrapment of the core and valence electrons. Unifying Si clusters and Si(001) and (111) skins, this mechanism has led to quantification of the 2p binding energy of 96.089 eV for an isolated Si atom, and their bulk shifts of 2.461 eV. Findings evidence the significance of atomic undercoordination that is of great importance to device performance.

  5. Positron annihilation and electron spin resonance studies of defects in electron-irradiated 3C-SiC

    International Nuclear Information System (INIS)

    Itoh, Hisayoshi; Yoshikawa, Masahito; Tanigawa, Shoichiro; Nashiyama, Isamu; Misawa, Shunji; Okumura, Hajime; Yoshida, Sadafumi.

    1992-01-01

    Defects induced by 1 MeV electron-irradiation in cubic silicon carbide (3C-SiC) epitaxially grown by chemical vapor deposition have been studied with positron annihilation and electron spin resonance (ESR). Doppler broadened energy spectra of annihilation γ-rays obtained by using variable-energy positron beams showed the formation of vacancy-type defects in 3C-SiC by the electron-irradiation. An ESR spectrum labeled Tl, which has an isotropic g-value of 2.0029 ± 0.001, was observed in electron-irradiated 3C-SiC. The Tl spectrum is interpreted by hyperfine interactions of paramagnetic electrons with 13 C at four carbon sites and 29 Si at twelve silicon sites, indicating that the Tl center arises from a point defect at a silicon site. Both the results can be accounted for by the introduction of isolated Si vacancies by the irradiation. (author)

  6. A new face of phenalenyl-based radicals in the transition metal-free C-H arylation of heteroarenes at room temperature: trapping the radical initiator via C-C σ-bond formation.

    Science.gov (United States)

    Ahmed, Jasimuddin; P, Sreejyothi; Vijaykumar, Gonela; Jose, Anex; Raj, Manthan; Mandal, Swadhin K

    2017-11-01

    The radical-mediated transition metal-free approach for the direct C-H bond functionalization of arenes is considered as a cost effective alternative to transition metal-based catalysis. An organic ligand-based radical plays a key role by generating an aryl radical which undergoes a subsequent functionalization process. The design principle of the present study takes advantage of a relatively stable odd alternant hydrocarbon-based phenalenyl (PLY) radical. In this study, the first transition metal-free catalyzed direct C-H arylation of a variety of heteroarenes such as azoles, furan, thiophene and pyridine at room temperature has been reported using a phenalenyl-based radical without employing any photoactivation step. This protocol has been successfully applied to the gram scale synthesis of core moieties of bioactive molecules. The phenalenyl-based radical initiator has been characterized crystallographically by trapping it via the formation of a C-C σ-bond between the phenalenyl radical and solvent-based radical species.

  7. Are Nonadiabatic Reaction Dynamics the Key to Novel Organosilicon Molecules? The Silicon (Si(3P))-Dimethylacetylene (C4H6(X1A1g)) System as a Case Study.

    Science.gov (United States)

    Thomas, Aaron M; Dangi, Beni B; Yang, Tao; Kaiser, Ralf I; Lin, Lin; Chou, Tzu-Jung; Chang, Agnes H H

    2018-06-06

    The bimolecular gas phase reaction of ground-state silicon (Si; 3 P) with dimethylacetylene (C 4 H 6 ; X 1 A 1g ) was investigated under single collision conditions in a crossed molecular beams machine. Merged with electronic structure calculations, the data propose nonadiabatic reaction dynamics leading to the formation of singlet SiC 4 H 4 isomer(s) and molecular hydrogen (H 2 ) via indirect scattering dynamics along with intersystem crossing (ISC) from the triplet to the singlet surface. The reaction may lead to distinct energetically accessible singlet SiC 4 H 4 isomers ( 1 p8- 1 p24) in overall exoergic reaction(s) (-107 -20 +12 kJ mol -1 ). All feasible reaction products are either cyclic, carry carbene analogous silylene moieties, or carry C-Si-H or C-Si-C bonds that would require extensive isomerization from the initial collision complex(es) to the fragmenting singlet intermediate(s). The present study demonstrates the first successful crossed beams study of an exoergic reaction channel arising from bimolecular collisions of silicon, Si( 3 P), with a hydrocarbon molecule.

  8. Evolution of 3C-SiC islands nucleated from a liquid phase on Si face α-SiC substrates

    International Nuclear Information System (INIS)

    Kim-Hak, Olivier; Ferro, Gabriel; Lorenzzi, Jean; Carole, Davy; Dazord, Jacques; Chaudouet, Patrick; Chaussende, Didier; Miele, Philippe

    2010-01-01

    The contact between α-SiC crystals and Si-Ge based melts provokes the nucleation of 3C-SiC islands on the crystal surface. Evolution of these islands as a function of various parameters was studied. On both 4H and 6H substrates, it was found that, after nucleation, 3C-SiC islands first enlarge and may form a complete 3C layer under certain conditions. The 3C deposit can then be dissolved by the liquid phase at high temperature or for prolonged contact at relatively moderate temperature. The graphite crucible is proposed to play a central role in these enlargement and dissolution mechanisms by providing extra carbon atoms on the seed surface (enlargement) or provoking thermal induced carbon transport toward the sidewall (dissolution). Several differences between the use of 4H and 6H substrates were also observed.

  9. Identification of the formation of metal-vinylidene interfacial bonds of alkyne-capped platinum nanoparticles by isotopic labeling.

    Science.gov (United States)

    Hu, Peiguang; Chen, Limei; Deming, Christopher P; Bonny, Lewis W; Lee, Hsiau-Wei; Chen, Shaowei

    2016-10-07

    Stable platinum nanoparticles were prepared by the self-assembly of 1-dodecyne and dodec-1-deuteroyne onto bare platinum colloid surfaces. The nanoparticles exhibited consistent core size and optical properties. FTIR and NMR measurements confirmed the formation of Pt-vinylidene (Pt[double bond, length as m-dash]C[double bond, length as m-dash]CH-) interfacial linkages rather than Pt-acetylide (Pt-C[triple bond, length as m-dash]C-) and platinum-hydride (Pt-H) bonds.

  10. Matrix density effects on the mechanical properties of SiC fiber-reinforced silicon nitride matrix properties

    Science.gov (United States)

    Bhatt, Ramakrishna T.; Kiser, Lames D.

    1990-01-01

    The room temperature mechanical properties were measured for SiC fiber reinforced reaction-bonded silicon nitride composites (SiC/RBSN) of different densities. The composites consisted of approx. 30 vol percent uniaxially aligned 142 micron diameter SiC fibers (Textron SCS-6) in a reaction-bonded Si3N4 matrix. The composite density was varied by changing the consolidation pressure during RBSN processing and by hot isostatically pressing the SiC/RBSN composites. Results indicate that as the consolidation pressure was increased from 27 to 138 MPa, the average pore size of the nitrided composites decreased from 0.04 to 0.02 microns and the composite density increased from 2.07 to 2.45 gm/cc. Nonetheless, these improvements resulted in only small increases in the first matrix cracking stress, primary elastic modulus, and ultimate tensile strength values of the composites. In contrast, HIP consolidation of SiC/RBSN resulted in a fully dense material whose first matrix cracking stress and elastic modulus were approx. 15 and 50 percent higher, respectively, and ultimate tensile strength values were approx. 40 percent lower than those for unHIPed SiC/RBSN composites. The modulus behavior for all specimens can be explained by simple rule-of-mixture theory. Also, the loss in ultimate strength for the HIPed composites appears to be related to a degradation in fiber strength at the HIP temperature. However, the density effect on matrix fracture strength was much less than would be expected based on typical monolithic Si3N4 behavior, suggesting that composite theory is indeed operating. Possible practical implications of these observations are discussed.

  11. Phenomenological inelastic constitutive equations for SiC and SiC fibers under irradiation

    International Nuclear Information System (INIS)

    El-Azab, A.; Ghoniem, N.M.

    1994-01-01

    Experimental data on irradiation-induced dimensional changes and creep in β-SiC and SiC fibers is analyzed, with the objective of studying the constitutive behavior of these materials under high-temperature irradiation. The data analysis includes empirical representation of irradiation-induced dimensional changes in SiC matrix and SiC fibers as function of time and irradiation temperature. The analysis also includes formulation of simple scaling laws to extrapolate the existing data to fusion conditions on the basis of the physical mechanisms of radiation effects on crystalline solids. Inelastic constitutive equations are then developed for SCS-6 SiC fibers, Nicalon fibers and CVD SiC. The effects of applied stress, temperature, and irradiation fields on the deformation behavior of this class of materials are simultaneously represented. Numerical results are presented for the relevant creep functions under the conditions of the fusion reactor (ARIES IV) first wall. The developed equations can be used in estimating the macro mechanical properties of SiC-SiC composite systems as well as in performing time-dependent micro mechanical analysis that is relevant to slow crack growth and fiber pull-out under fusion conditions

  12. Effect of fiber surface state on mechanical properties of Cf/Si-O-C composites

    International Nuclear Information System (INIS)

    Wang Song; Chen Zhaohui; Ma Qingsong; Hu Haifeng; Zheng Wenwei

    2005-01-01

    Three-dimensional braided carbon fiber reinforced silicon oxycarbide composites (3D-B C f /Si-O-C) were fabricated via a polysiloxane infiltration and pyrolysis route. The effects of fiber surface state on microstructure and mechanical properties of C f /Si-O-C composites were investigated. The change of carbon fiber surface state was achieved via heat treatment in vacuum. The results showed that heat treatment decreased carbon fiber surface activity due to the decrease of the amount of oxygen and nitrogen atoms. The C f /Si-O-C composites fabricated from the carbon fiber with low surface activity had excellent mechanical properties, which resulted from perfect interfacial bonding and good in situ fiber strength. The flexural strength and fracture toughness of the C f /Si-O-C composites from the treated fiber were 534 MPa and 23.4 MPa m 1/2 , respectively, which were about 7 and 11 times more than those of the composites from the as-received carbon fiber, respectively

  13. Thermal shock properties of 2D-SiCf/SiC composites

    International Nuclear Information System (INIS)

    Lee, Sang Pill; Lee, Jin Kyung; Son, In Soo; Bae, Dong Su; Kohyama, Akira

    2012-01-01

    This paper dealt with the thermal shock properties of SiC f /SiC composites reinforced with two dimensional SiC fabrics. SiC f /SiC composites were fabricated by a liquid phase sintering process, using a commercial nano-size SiC powder and oxide additive materials. An Al 2 O 3 –Y 2 O 3 –SiO 2 powder mixture was used as a sintering additive for the consolidation of SiC matrix region. In this composite system, Tyranno SA SiC fabrics were also utilized as a reinforcing material. The thermal shock test for SiC f /SiC composites was carried out at the elevated temperature. Both mechanical strength and microstructure of SiC f /SiC composites were investigated by means of optical microscopy, SEM and three point bending test. SiC f /SiC composites represented a dense morphology with a porosity of about 8.2% and a flexural strength of about 160 MPs. The characterization of SiC f /SiC composites was greatly affected by the history of cyclic thermal shock. Especially, SiC f /SiC composites represented a reduction of flexural strength at the thermal shock temperature difference higher than 800 °C.

  14. Effects of sintering additives on the microstructural and mechanical properties of the ion-irradiated SiCf/SiC

    Science.gov (United States)

    Fitriani, Pipit; Sharma, Amit Siddharth; Yoon, Dang-Hyok

    2018-05-01

    SiCf/SiC composites containing three different types of sintering additives viz. Sc-nitrate, Al2O3-Sc2O3, and Al2O3-Y2O3, were subjected to ion irradiation using 0.2 MeV H+ ions with a fluence of 3 × 1020 ions/m2 at room temperature. Although all composites showed volumetric swelling upon ion irradiation, SiCf/SiC with Sc-nitrate showed the smallest change followed by those with the Al2O3-Sc2O3 and Al2O3-Y2O3 additives. In particular, SiCf/SiC containing the conventional Al2O3-Y2O3 additive revealed significant microstructural changes, such as surface roughening and the formation of cracks and voids, resulting in reduced fiber pullout upon irradiation. On the other hand, the SiCf/SiC with Sc-nitrate showed the highest resistance against ion irradiation without showing any macroscopic changes in surface morphology and mechanical strength, indicating the importance of the sintering additive in NITE-based SiCf/SiC for nuclear structural applications.

  15. Formation of thin DLC films on SiO2/Si substrate using FCVAD technique

    International Nuclear Information System (INIS)

    Bootkul, D.; Intarasiri, S.; Aramwit, C.; Tippawan, U.; Yu, L.D.

    2013-01-01

    Diamond-like carbon (DLC) films deposited on SiO 2 /Si substrate are attractive for novel sensitive and selective chemical sensors. According to the almost never ending of size reduction, a nm-thickness layer of the film is greatly required. However, formation of such a very thin DLC film on SiO 2 /Si substrate is challenging. In this experiment, DLC films were formed using our in-house Filtered Cathodic Vacuum Arc Deposition (FCVAD) facility by varying the bias voltage of 0 V, −250 V and −450 V with the arc voltage of 350 V, 450 V, 550 V, 650 V and 750 V for 10 min. Raman spectroscopy was applied for characterization of the film qualities and Transmission Electron Microscopy (TEM) was applied for cross sectional analysis. Results showed that films of thickness ranging from 10–50 nm were easily acquired depending on deposition conditions. Deconvolution of Raman spectra of these samples revealed that, when fixing the substrate bias but increasing the arc voltage from 350 to 750 V, the ratio between D-peak and G-peak intensity, namely I D /I G ratio, tended to reduce up to the arc voltage of 450 V, then increased up to the arc voltage of 650 V and finally decreased again. On the other hand, when fixing the arc voltage, the I D /I G ratio tended to decrease continuously as the increasing of bias voltage. It can be concluded that the bonding structure would evolve from a graphitic-like structure to a diamond-like structure as the substrate bias increases. Additionally, the sp 3 site should be maximized at the arc voltage ∼450 V for fixed bias voltage. It is expected that, at −450 V bias and 450 V arc, sp 3 fractions could be higher than 60%. However, in some cases, e.g. at low arc voltages, voids formed between the film and the amorphous SiO 2 substrate. Electron energy loss spectroscopy (EELS) of the C edge across the DLC indicated that the thicker DLC film had uniform chemistry and structure, whereas the thin DLC film showed changes in the edge shape

  16. Mechanical properties of MeV ion-irradiated SiC/SiC composites characterized by indentation technique

    International Nuclear Information System (INIS)

    Park, J.Y.; Park, K.H.; Kim, W.; Kishimoto, H.; Kohyama, A.

    2007-01-01

    Full text of publication follows: SiC/SiC composites have been considered as a structural material for advanced fusion concepts. In the core of fusion reactor, those SiC/SiC composites are experienced the complex attacks such as strong neutron, high temperature and transmuted gases. One of the vital data for designing the SiC/SiC composites to the fusion reactor is mechanical properties under the severe neutron irradiation. In this work, various SiC/SiC composites were prepared by the different fabrication processes like CVI (chemical vapor infiltration), WA-CVI (SiC whisker assisted CVI) and hot-pressed method. The expected neutron irradiation was simulated by a silicon self-ion irradiation at a DuET facility; Dual-beam for Energy Technologies, Kyoto University. The irradiation temperature were 600 deg. C and 1200 deg. C, and the irradiation does were 5 dpa and 20 dpa, respectively. The 5.1 MeV Si ions were irradiated to the intrinsic CVI-SiC, SiC whisker reinforced SiC and SiC composites produced by hot-press method. The mechanical properties like hardness, elastic modulus and fracture toughness were characterized by an indentation technique. The ion irradiation caused the increase of the hardness and fracture toughness, which was dependent on the irradiation temperature. SiC whisker reinforcement in the SiC matrix accelerated the increase of the fracture toughness by the ion irradiation. For SiC/SiC composites after the ion irradiation, this work will provide the additional data for the mechanical properties as well as the effect of SiC whisker reinforcement. (authors)

  17. Comparative study on stress in AlGaN/GaN HEMT structures grown on 6H-SiC, Si and on composite substrates of the 6H-SiC/poly-SiC and Si/poly-SiC

    International Nuclear Information System (INIS)

    Guziewicz, M; Kaminska, E; Piotrowska, A; Golaszewska, K; Domagala, J Z; Poisson, M-A; Lahreche, H; Langer, R; Bove, P

    2008-01-01

    The stresses in GaN-based HEMT structures grown on both single crystal 6H SiC(0001) and Si(111) have been compared to these in the HEMT structures grown on new composite substrates engendered as a thin monocrystalline film attached to polycrystalline 3C-SiC substrate. By using HRXRD technique and wafer curvature method we show that stress of monocrystalline layer in composite substrates of the type mono-Si/poly-SiC is lower than 100 MPa and residual stress of epitaxial GaN buffer grown on the composite substrate does not exceed 0.31 GPa, but in the cases of single crystal SiC or Si substrates the GaN buffer stress is compressive in the range of -0.5 to -0.75 GPa. The total stress of the HEMT structure calculated from strains is consistent with the averaged stress of the multilayers stack measured by wafer curvature method. The averaged stress of HEMT structure grown on single crystals is higher than those in structures grown on composites substrates

  18. Corrosion Study and Intermetallics Formation in Gold and Copper Wire Bonding in Microelectronics Packaging

    Directory of Open Access Journals (Sweden)

    Christopher Breach

    2013-07-01

    Full Text Available A comparison study on the reliability of gold (Au and copper (Cu wire bonding is conducted to determine their corrosion and oxidation behavior in different environmental conditions. The corrosion and oxidation behaviors of Au and Cu wire bonding are determined through soaking in sodium chloride (NaCl solution and high temperature storage (HTS at 175 °C, 200 °C and 225 °C. Galvanic corrosion is more intense in Cu wire bonding as compared to Au wire bonding in NaCl solution due to the minimal formation of intermetallics in the former. At all three HTS annealing temperatures, the rate of Cu-Al intermetallic formation is found to be three to five times slower than Au-Al intermetallics. The faster intermetallic growth rate and lower activation energy found in this work for both Au/Al and Cu/Al as compared to literature could be due to the thicker Al pad metallization which removed the rate-determining step in previous studies due to deficit in Al material.

  19. Vacancy effects on the formation of helium and krypton cavities in 3-C-SiC irradiated and annealed at elevated temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Zang, Hang; Liu, Wenbo; Li, Tao; He, Chaohui; Yun, Di; Jiang, Weilin; Devaraj, Arun; Edwards, Danny J.; Henager, Charles H.; Kurtz, Richard J.; Wang, Zhiguang

    2017-02-27

    Polycrystalline 3C-SiC was sequentially irradiated at 400 and 750°C with 120 keV He2+ and 4 MeV Kr15+ ions to 1017 and 41016 cm-2, respectively. The Kr15+ ions penetrated the entire depth of the He2+ ion implantation region. Three areas of He2+, Kr15+ and He2+ + Kr15+ ion implanted 3C-SiC were created through masked overlapping irradiations. The sample was subsequently annealed at 1600°C in vacuum and characterized using cross-sectional transmission electron microscopy and energy-dispersive x-ray spectroscopy. Compared to the He2+ ion only implanted 3C-SiC, helium cavities in the He2+ and Kr15+ co-implanted 3C-SiC had a smaller size but higher density. At 25 dpa, presence of He in the co-implanted 3C-SiC significantly promoted cavity growth; much smaller voids were formed in the Kr15+ ion only irradiated 3C-SiC at the same dose. In addition, local Kr migration and trapping at cavities occurred, but long-range Kr diffusion in 3C-SiC was not observed up to 1600°C.

  20. SiC/SiC composite fabricated with carbon nanotube interface layer and a novel precursor LPVCS

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Shuang, E-mail: zhsh6007@126.com [Science and Technology on Advanced Ceramic Fibers and Composites Laboratory, National University of Defense Technology, Changsha 410073 (China); School of Mechanical, Aerospace, and Civil Engineering, University of Manchester, Manchester M13 9PL (United Kingdom); Zhou, Xingui; Yu, Jinshan [Science and Technology on Advanced Ceramic Fibers and Composites Laboratory, National University of Defense Technology, Changsha 410073 (China); Mummery, Paul [School of Mechanical, Aerospace, and Civil Engineering, University of Manchester, Manchester M13 9PL (United Kingdom)

    2014-02-15

    Highlights: • The CNTs were distributed uniformly on the SiC fibers in the fabric by CVD process. • The microstructural evolution of the CNTs interface coating was studied. • The closed porosity was investigated by X-ray tomography. • The liquid precursor LPVCS exhibited high densification efficiency. - Abstract: Continuous SiC fiber reinforced SiC matrix composites (SiC/SiC) have been studied as promising candidate materials for nuclear applications. Three-dimensional SiC/SiC composite was fabricated via polymer impregnation and pyrolysis (PIP) process using carbon nanotubes (CNTs) as the interface layer and LPVCS as the polymer precursor. The microstructural evolution of the fiber/matrix interface was studied. The porosity, mechanical properties, thermal and electrical conductivities of the SiC/SiC composite were investigated. The results indicated that the high densification efficiency of the liquid precursor LPVCS resulted in a low porosity of the SiC/SiC composite. The SiC/SiC composite exhibited non-brittle fracture behavior, however, bending strength and fracture toughness of the composite were relatively low because of the absence of CNTs as the interface layer. The thermal and electrical conductivities of the SiC/SiC composite were low enough to meet the requirements desired for flow channel insert (FCI) applications.

  1. Vacancy effects on the formation of He and Kr cavities in 3C-SiC irradiated and annealed at elevated temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Zang, Hang; Jiang, Weilin; Liu, Wenbo; Devaraj, Arun; Edwards, Danny J.; Henager, Charles H.; Kurtz, Richard J.; Li, Tao; He, Chaohui; Yun, Di; Wang, Zhiguang

    2016-12-01

    Polycrystalline 3C-SiC was sequentially irradiated at 400 and 750°C with 120 keV He2+ and 4 MeV Kr15+ ions to E21 and 4E20 ions/m2 with profiles of the implanted species peaked at 450 and 1500 nm, respectively. The masked overlapping irradiation created three study areas of He2+, Kr15+ and He2+ + Kr15+ implanted SiC. The doses at the depth of the peak He concentration in He2+ and He2+ + Kr15+ implanted SiC correspond to 4 and 25 dpa. The sample was subsequently annealed at 1600°C for 3 h in vacuum and characterized using cross-sectional transmission electron microscopy and energy-dispersive x-ray spectroscopy. Compared to the He2+ implanted SiC, He cavities show a smaller size and higher density in the co-implanted SiC. At 25 dpa, He presence in the co-implanted 3C-SiC significantly promotes He cavity growth, as contrasted to the smaller voids formed without He in the Kr15+ irradiated SiC at the same dose. In addition, local Kr migration and trapping at cavities occur, but long-range Kr diffusion in SiC is not observed up to 1600°C.

  2. SiC-SiC and C-SiC Honeycomb for Advanced Flight Structures, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — The proposed project builds upon the work done in Phase I with the development of a C-SiC CMC honeycomb material that was successfully tested for mechanical...

  3. Structural, elastic, electronic, bonding, and optical properties of BeAZ{sub 2} (A = Si, Ge, Sn; Z = P, As) chalcopyrites

    Energy Technology Data Exchange (ETDEWEB)

    Fahad, Shah [Department of Physics, Hazara University Mansehra, KPK, Mansehra (Pakistan); Murtaza, G., E-mail: murtaza@icp.edu.pk [Materials Modeling Laboratory, Department of Physics, Islamia College University, Peshawar (Pakistan); Ouahrani, T. [Laboratoire de Physique Théorique, B.P. 230, Université de Tlemcen, Tlemcen 13000 (Algeria); Ecole Préparatoire en Sciences et Techniques, BP 165 R.P., 13000 Tlemcen (Algeria); Khenata, R., E-mail: khenata_rabah@yahoo.fr [Laboratoire de Physique Quantique et de Modélisation Mathématique, Université de Mascara, 29000 (Algeria); Yousaf, Masood [Center for Multidimensional Carbon Materials, Institute for Basic Science, Department of Physics, Ulsan National Institute of Science and Technology, Ulsan 689-798 (Korea, Republic of); Omran, S.Bin [Department of Physics and Astronomy, College of Science, King Saud University, P.O. Box 2455, Riyadh 11451 (Saudi Arabia); Mohammad, Saleh [Department of Physics, Hazara University Mansehra, KPK, Mansehra (Pakistan)

    2015-10-15

    A first principles density functional theory (DFT) technique is used to study the structural, chemical bonding, electronic and optical properties of BeAZ{sub 2} (A = Si, Ge, Sn; Z = P, As) chalcopyrite materials. The calculated parameters are in good agreement with the available experimental results. The lattice constants and the equilibrium volume increased as we moved from Si to Ge to Sn, whereas the c/a and internal parameters u decreased by shifting the cation from P to As. These compounds are elastically stable. An investigation of the band gap using the WC-GGA, EV-GGA, PBE-GGA and mBJ-metaGGA potentials suggested that BeSiP{sub 2} and BeSiAs{sub 2} are direct band gap compounds, whereas BeGeP{sub 2,} BeGeAs{sub 2,} BeSnP{sub 2,} BeSnAs{sub 2} are indirect band gap compounds. The energy band gaps decreased by changing B from Si to Sn and increased by changing the anion C from P to As. The bonding among the cations and anions is primarily ionic. In the optical properties, the real and imaginary parts of the dielectric functions, reflectivity and optical conductivity have been studied over a wide energy range. - Highlights: • The compounds are studied by FP-LAPW method within mBJ approximation. • All of the studied materials show isotropic behaviour. • All the compounds show direct band gap nature. • Bonding nature is mostly covalent among the studied compounds. • High absorption peaks and reflectivity ensures there utility in optoelectronic devices.

  4. C-H Bond Functionalization via Hydride Transfer: Direct Coupling of Unactivated Alkynes and sp3 C-H Bonds Catalyzed by Platinum Tetraiodide

    Science.gov (United States)

    Vadola, Paul A.; Sames, Dalibor

    2010-01-01

    We report a catalytic intramolecular coupling between terminal unactivated alkynes and sp3 C-H bonds via the through-space hydride transfer (HT-cyclization of alkynes). This method enables one-step preparation of complex heterocyclic compounds by α-alkenylation of readily available cyclic ethers and amines. We show that PtI4 is an effective Lewis acid catalyst for the activation of terminal alkynes for the hydride attack and subsequent C-C bond formation. In addition, we have shown that the activity of neutral platinum salts (PtXn) can be modulated by the halide ligands. This modulation in turn allows for fine-tuning of the platinum center reactivity to match the reactivity and stability of selected substrates and products. PMID:19852462

  5. Die degradation effect on aging rate in accelerated cycling tests of SiC power MOSFET modules

    DEFF Research Database (Denmark)

    Luo, Haoze; Baker, Nick; Iannuzzo, Francesco

    2017-01-01

    In order to distinguish the die and bond wire degradations, in this paper both the die and bond wire resistances of SiC MOSFET modules are measured and tested during the accelerated cycling tests. It is proved that, since the die degradation under specific conditions increases the temperature swing...

  6. Fabrication of SiC Composites with Synergistic Toughening of Carbon Whisker and In Situ 3C-SiC Nanowire

    Directory of Open Access Journals (Sweden)

    Zhang Yunlong

    2016-01-01

    Full Text Available The SiC composites with synergistic toughening of carbon whisker and in situ 3C-SiC nanowire have been fabricated by hot press sinter technology and annealed treatment technology. Effect of annealed time on the morphology of SiC nanowires and mechanical properties of the Cw/SiC composites was surveyed in detail. The appropriate annealed time improved mechanical properties of the Cw/SiC composites. The synergistic effect of carbon whisker and SiC nanowire can improve the fracture toughness for Cw/SiC composites. The vapor-liquid-solid growth (VLS mechanism was proposed. TEM photo showed that 3C-SiC nanowire can be obtained with preferential growth plane ({111}, which corresponded to interplanar spacing about 0.25 nm.

  7. Investigation on fabrication of SiC/SiC composite as a candidate material for fuel sub-assembly

    International Nuclear Information System (INIS)

    Lee, Jae-Kwang; Naganuma, Masayuki; Park, Joon-Soo; Kohyama, Akira

    2005-01-01

    The possibility of SiC/SiC (Silicon carbide fiber reinforced Silicon carbide) composites application for fuel sub-assembly of Fast Breeder Reactor was investigated. To select a raw material of SiC/SiC composites, a few kinds of SiC nano powder was estimated by SEM observation and XRD analysis. Furthermore, SiC monolithic was sintered from them and estimated by flexural test. SiC nano-powder which showed good sinterability, it was used for fabrication of SiC/SiC composites by Hot Pressing method. From the sintering condition of 1800, 1820degC temperature and 15, 20 MPa pressure, SiC/SiC composite was fabricated and then estimated by tensile test. SiC/SiC composite, which made by 1820degC and 20 MPa condition, showed the highest mechanical strength by the monotonic tensile test. SiC/SiC composite, which made by 1800degC and 15 MPa condition, showed a stable fracture behavior at the monotonic and cyclic tensile test. And then, the hoop stress of ideal model of SiC/SiC composites was discussed. It was confirmed that applicability of SiC/SiC composites by Hot Pressing method for fuel sub-assembly structural material. To make it real attractive one, to maintain the reliability and safety as a high temperature structural material, the design and process study on SiC/Sic composites material will be continued. (author)

  8. Steel-SiC Metal Matrix Composite Development. Final report

    International Nuclear Information System (INIS)

    Smith, Don D.

    2005-01-01

    One of the key materials challenges for Generation IV reactor technology is to improve the strength and resistance to corrosion and radiation damage in the metal cladding of the fuel pins during high-temperature operation. Various candidate Gen IV designs call for increasing core temperature to improve efficiency and facilitate hydrogen production, operation with molten lead moderator to use fast neutrons. Fuel pin lifetime against swelling and fracture is a significant limit in both respects. The goal of this project is to develop a method for fabricating SiC-reinforced high-strength steel. We are developing a metal-matrix composite (MMC) in which SiC fibers are be embedded within a metal matrix of steel, with adequate interfacial bonding to deliver the full benefit of the tensile strength of the SiC fibers in the composite. In the context of the mission of the SBIR program, this Phase I grant has been successful. The development of a means to attain interfacial bonding between metal and ceramic has been a pacing challenge in materials science and technology for a century. It entails matching or grading of thermal expansion across the interface and attaining a graded chemical composition so that impurities do not concentrate at the boundary to create a slip layer. To date these challenges have been solved in only a modest number of pairings of compatible materials, e.g. Kovar and glass, titanium and ceramic, and aluminum and ceramic. The latter two cases have given rise to the only presently available MMC materials, developed for aerospace applications. Those materials have been possible because the matrix metal is highly reactive at elevated temperature so that graded composition and intimate bonding happens naturally at the fiber-matrix interface. For metals that are not highly reactive at processing temperature, however, successful bonding is much more difficult. Recent success has been made with copper MMCs for cooling channels in first-wall designs for fusion

  9. Metal-organic cooperative catalysis in C-H and C-C bond activation and its concurrent recovery.

    Science.gov (United States)

    Park, Young Jun; Park, Jung-Woo; Jun, Chul-Ho

    2008-02-01

    The development of an efficient catalytic activation (cleavage) system for C-H and C-C bonds is an important challenge in organic synthesis, because these bonds comprise a variety of organic molecules such as natural products, petroleum oils, and polymers on the earth. Among many elegant approaches utilizing transition metals to activate C-H and C-C bonds facilely, chelation-assisted protocols based on the coordinating ability of an organic moiety have attracted great attention, though they have often suffered from the need for an intact coordinating group in a substrate. In this Account, we describe our entire efforts to activate C-H or C-C bonds adjacent to carbonyl groups by employing a new concept of metal-organic cooperative catalysis (MOCC), which enables the temporal installation of a 2-aminopyridyl group into common aldehydes or ketones in a catalytic way. Consequently, a series of new catalytic reactions such as alcohol hydroacylation, oxo-ester synthesis, C-C triple bond cleavage, hydrative dimerization of alkynes, and skeletal rearrangements of cyclic ketones was realized through MOCC. In particular, in the quest for an optimized MOCC system composed of a Wilkinson's catalyst (Ph 3P) 3RhCl and an organic catalyst (2-amino-3-picoline), surprising efficiency enhancements could be achieved when benzoic acid and aniline were introduced as promoters for the aldimine formation process. Furthermore, a notable accomplishment of C-C bond activation has been made using 2-amino-3-picoline as a temporary chelating auxiliary in the reactions of unstrained ketones with various terminal olefins and Wilkinson's catalyst. In the case of seven-membered cyclic ketones, an interesting ring contraction to five- or six-membered ones takes place through skeletal rearrangements initiated by the C-C bond activation of MOCC. On the other hand, the fundamental advances of these catalytic systems into recyclable processes could be achieved by immobilizing both metal and organic

  10. Defect-induced polytype transformations in LPE grown SiC epilayers on (1 1 1) 3C-SiC seeds grown by VLS on 6H-SiC

    International Nuclear Information System (INIS)

    Marinova, Maya; Zoulis, Georgios; Robert, Teddy; Mercier, Frederic; Mantzari, Alkioni; Galben, Irina; Kim-Hak, Olivier; Lorenzzi, Jean; Juillaguet, Sandrine; Chaussende, Didier; Ferro, Gabriel; Camassel, Jean; Polychroniadis, Efstathios K.

    2009-01-01

    The results of transmission electron microscopy (TEM) with low-temperature photoluminescence (LTPL) and Raman studies of liquid phase grown epilayers on top of a vapor liquid solid (VLS) grown 3C-SiC buffer layer are compared. While the 6H-SiC substrate was completely covered by the 3C-SiC seed after the first VLS process, degradation occurred during the early stage of the liquid phase epitaxy process. This resulted in polytype instabilities, such that several rhombohedral forms stabilized one after the other. These (21R-SiC, 57R-SiC) eventually led after few microns to a final transition back to 6H-SiC. This interplay of polytypes resulted in a complex optical signature, with specific LTPL and Raman features.

  11. Ab-initio modeling of oxygen on the surface passivation of 3C-SiC nanostructures

    International Nuclear Information System (INIS)

    Cuevas, J.L.; Trejo, A.; Calvino, M.; Carvajal, E.; Cruz-Irisson, M.

    2012-01-01

    In this work the effect of OH on the electronic states of H-passivated 3C-SiC nanostructures, was studied by means of Density Functional Theory. We compare the electronic band structure for a [1 1 1]-oriented nanowire with total H, OH passivation and a combination of both. Also the electronic states of a porous silicon carbide case (PSiC) a C-rich pore surface in which the dangling bonds on the surface are saturated with H and OH was studied. The calculations show that the surface replacement of H with OH radicals is always energetically favorable and more stable. In all cases the OH passivation produced a similar effect than the H passivation, with electronic band gap of lower energy value than the H-terminated phase. When the OH groups are attached to C atoms, the band gap feature is changed from direct to indirect. The results indicate the possibility of band gap engineering on SiC nanostructures through the surface passivation species.

  12. Minimum bar size for flexure testing of irradiated SiC/SiC composite

    International Nuclear Information System (INIS)

    Youngblood, G.E.; Jones, R.H.

    1998-01-01

    This report covers material presented at the IEA/Jupiter Joint International Workshop on SiC/SiC Composites for Fusion structural Applications held in conjunction with ICFRM-8, Sendai, Japan, Oct. 23-24, 1997. The minimum bar size for 4-point flexure testing of SiC/SiC composite recommended by PNNL for irradiation effects studies is 30 x 6 x 2 mm 3 with a span-to-depth ratio of 10/1

  13. Cleavage of sp3 C-O bonds via oxidative addition of C-H bonds.

    Science.gov (United States)

    Choi, Jongwook; Choliy, Yuriy; Zhang, Xiawei; Emge, Thomas J; Krogh-Jespersen, Karsten; Goldman, Alan S

    2009-11-04

    (PCP)Ir (PCP = kappa(3)-C(6)H(3)-2,6-[CH(2)P(t-Bu)(2)](2)) is found to undergo oxidative addition of the methyl-oxygen bond of electron-poor methyl aryl ethers, including methoxy-3,5-bis(trifluoromethyl)benzene and methoxypentafluorobenzene, to give the corresponding aryloxide complexes (PCP)Ir(CH(3))(OAr). Although the net reaction is insertion of the Ir center into the C-O bond, density functional theory (DFT) calculations and a significant kinetic isotope effect [k(CH(3))(OAr)/k(CD(3))(OAr) = 4.3(3)] strongly argue against a simple insertion mechanism and in favor of a pathway involving C-H addition and alpha-migration of the OAr group to give a methylene complex followed by hydride-to-methylene migration to give the observed product. Ethoxy aryl ethers, including ethoxybenzene, also undergo C-O bond cleavage by (PCP)Ir, but the net reaction in this case is 1,2-elimination of ArO-H to give (PCP)Ir(H)(OAr) and ethylene. DFT calculations point to a low-barrier pathway for this reaction that proceeds through C-H addition of the ethoxy methyl group followed by beta-aryl oxide elimination and loss of ethylene. Thus, both of these distinct C-O cleavage reactions proceed via initial addition of a C(sp(3))-H bond, despite the fact that such bonds are typically considered inert and are much stronger than C-O bonds.

  14. Microstructure and Properties of Porous Si3N4/Dense Si3N4 Joints Bonded Using RE–Si–Al–O–N (RE = Y or Yb Glasses

    Directory of Open Access Journals (Sweden)

    Ling Li

    2017-11-01

    Full Text Available The joining of porous Si3N4 to dense Si3N4 ceramics has been successfully performed using mixed RE2O3 (RE = Y or Yb, Al2O3, SiO2, and α-Si3N4 powders. The results suggested that the α-Si3N4 powders partly transformed into β-SiAlON and partly dissolved into oxide glass to form oxynitride glass. Thus, composites of glass/β-SiAlON-ceramic formed in the seam of joints. Due to the capillary action of the porous Si3N4 ceramic, the molten glass solder infiltrated into the porous Si3N4 ceramic side during the joining process and formed the “infiltration zone” with a thickness of about 400 μm, which contributed to the heterogeneous distribution of the RE–Si–Al–O–N glasses in the porous Si3N4 substrate. In-situ formation of β-SiAlON in the seam resulted in a high bonding strength. The maximum bending strength of 103 MPa and 88 MPa was reached for the porous Si3N4/dense Si3N4 joints using Y–Si–Al–O–N and Yb–Si–Al–O–N glass solders, respectively.

  15. Multiple C-H Bond Activations and Ring-Opening C-S Bond Cleavage of Thiophene by Dirhenium Carbonyl Complexes.

    Science.gov (United States)

    Adams, Richard D; Dhull, Poonam; Tedder, Jonathan D

    2018-06-14

    The reaction of Re 2 (CO) 8 (μ-C 6 H 5 )(μ-H) (1) with thiophene in CH 2 Cl 2 at 40 °C yielded the new compound Re 2 (CO) 8 (μ-η 2 -SC 4 H 3 )(μ-H) (2), which contains a bridging σ-π-coordinated thienyl ligand formed by the activation of the C-H bond at the 2 position of the thiophene. Compound 2 exhibits dynamical activity on the NMR time scale involving rearrangements of the bridging thienyl ligand. The reaction of compound 2 with a second 1 equiv of 1 at 45 °C yielded the doubly metalated product [Re 2 (CO) 8 (μ-H)] 2 (μ-η 2 -2,3-μ-η 2 -4,5-C 4 H 2 S) (3), formed by the activation of the C-H bond at the 5 position of the thienyl ligand in 2. Heating 3 in a hexane solvent to reflux transformed it into the ring-opened compound Re(CO) 4 [μ-η 5 -η 2 -SCC(H)C(H)C(H)][Re(CO) 3 ][Re 2 (CO) 8 (μ-H)] (4) by the loss of one CO ligand. Compound 4 contains a doubly metalated 1-thiapentadienyl ligand formed by the cleavage of one of the C-S bonds. When heated to reflux (125 °C) in an octane solvent in the presence of H 2 O, the new compound Re(CO) 4 [η 5 -μ-η 2 -SC(H)C(H)C(H)C(H)]Re(CO) 3 (5) was obtained by cleavage of the Re 2 (CO) 8 (μ-H) group from 4 with formation of the known coproduct [Re(CO) 3 (μ 3 -OH)] 4 . All new products were characterized by single-crystal X-ray diffraction analyses.

  16. Annealing study on radiation-induced defects in 6H-SiC

    International Nuclear Information System (INIS)

    Pinheiro, M.V.B.; Lingner, T.; Caudepon, F.; Greulich-Weber, S.; Spaeth, J.M.

    2004-01-01

    We present the results of a systematic isochronal annealing investigation of vacancy-related defects in electron-irradiated n-type 6H-SiC:N. A series of 10 samples cut from a commercial wafer and annealed up to 1200 C after electron-irradiation (1.5 x 10 18 cm -3 ) was characterized with photoluminescence (PL), Magnetic circular dichroism of the absorption (MCDA) and conventional electron paramagnetic resonance (EPR). Apart from less stable triplet-related defects which vanished between 150 C and 300 C, the thermal behavior of three radiation-induced defects was studied: the silicon vacancy (V Si ), the carbon-antisite-carbon-vacancy pair (C Si -V C ) and the D1 center. Their annealing behavior showed that the destruction of the isolated V Si between 750 C and 900 C is followed by the formation of thermally more stable C Si -V C pairs, a result that has been theoretically predicted recently. By further heating the samples the C Si -V C pairs are annealed out between 900 C and 1050 C and were followed by an increase in the D1 center concentration. (orig.)

  17. Stability analysis of SiO2/SiC multilayer coatings

    International Nuclear Information System (INIS)

    Fu Zhiqiang; Jean-Charles, R.

    2006-01-01

    The stability behaviours of SiC coatings and SiO 2 /SiC coatings in helium with little impurities are studied by HSC Chemistry 4.1, the software for analysis of Chemical reaction and equilibrium in multi-component complex system. It is found that in helium with a low partial pressure of oxidative impurities under different total pressure, the key influence factor controlling T cp of SiC depends is the partial pressure of oxidative impurities; T cp of SiC increases with the partial pressure of oxidative impurities. In helium with a low partial pressure of different impurities, the key influence factor of T cs of SiO 2 are both the partial pressure of impurities and the amount of impurities for l mol SiO 2 ; T cs of SiO 2 increases with the partial pressure of oxidative impurities at the same amount of the impurities for 1 mol SiO 2 while it decreases with the amount of the impurities for 1 mm SiO 2 at the same partial pressure of the impurities. The influence of other impurities on T cp of SiC in He-O 2 is studied and it is found that CO 2 , H 2 O and N-2 increase T cp of SiC in He-O 2 while H 2 , CO and CH 4 decrease T cp of SiC He-O 2 . When there exist both oxidative impurities and reductive impurities, their effect on T cs of SiO 2 can be suppressed by the other. In HTR-10 operation atmosphere, SiO 2 /SiC coatings can keep stable status at higher temperature than SiC coatings, so SiO 2 /SiC coatings is more suitable to improve the oxidation resistance of graphite in HTR-10 operation atmosphere compared with SiC coatings. (authors)

  18. Effects of the c-Si/a-SiO2 interfacial atomic structure on its band alignment: an ab initio study.

    Science.gov (United States)

    Zheng, Fan; Pham, Hieu H; Wang, Lin-Wang

    2017-12-13

    The crystalline-Si/amorphous-SiO 2 (c-Si/a-SiO 2 ) interface is an important system used in many applications, ranging from transistors to solar cells. The transition region of the c-Si/a-SiO 2 interface plays a critical role in determining the band alignment between the two regions. However, the question of how this interface band offset is affected by the transition region thickness and its local atomic arrangement is yet to be fully investigated. Here, by controlling the parameters of the classical Monte Carlo bond switching algorithm, we have generated the atomic structures of the interfaces with various thicknesses, as well as containing Si at different oxidation states. A hybrid functional method, as shown by our calculations to reproduce the GW and experimental results for bulk Si and SiO 2 , was used to calculate the electronic structure of the heterojunction. This allowed us to study the correlation between the interface band characterization and its atomic structures. We found that although the systems with different thicknesses showed quite different atomic structures near the transition region, the calculated band offset tended to be the same, unaffected by the details of the interfacial structure. Our band offset calculation agrees well with the experimental measurements. This robustness of the interfacial electronic structure to its interfacial atomic details could be another reason for the success of the c-Si/a-SiO 2 interface in Si-based electronic applications. Nevertheless, when a reactive force field is used to generate the a-SiO 2 and c-Si/a-SiO 2 interfaces, the band offset significantly deviates from the experimental values by about 1 eV.

  19. Yttrium silicate as an oxidation protection layer for C/C-SiC materials. Synthesis, electrophoretic deposition and high temperature oxidation; Yttriumsilikat als Oxidationsschutzschicht fuer C/C-SiC-Werkstoffe. Synthese, elektrophoretische Abscheidung und Hochtemperaturoxidation

    Energy Technology Data Exchange (ETDEWEB)

    Grosse-Brauckmann, Jana

    2012-07-01

    Carbon fibre reinforced carbon composites are promising materials for high temperature applications. They exhibit excellent thermal shock resistance and nearly constant mechanical strength. A serious draw-back of this material is their poor resistivity towards oxidation at temperatures above 400 C. To make use of the very good thermal stability the material needs an outer oxidation protection coating. Silicon carbide has been successfully employed at temperatures up to 1300 C. To increase the application range towards higher temperatures an outer environmental barrier coating is needed. In the present work yttrium silicates were used to complement the silicon carbide coated carbon fibre reinforced carbon material. Both stable compounds in the quasi-binary system Y{sub 2}O{sub 3}-SiO{sub 2}, yttrium orthosilicate (Y{sub 2}SiO{sub 5}) and yttrium pyrosilicate (Y{sub 2}Si{sub 2}O{sub 7}), were separately applied to the test samples via electrophoretic deposition. Suitable suspensions were prepared in butanone with iodine as charging agent to adjust conductivity and particle charge. Galvanostatic deposition obeys a linear growth law for the selected deposition times. Alternatively the feasibility of direct electrophoretic deposition from an yttrium silicate precursor sol was tested. Emphasis was put on the development of a suitable sol-system based on alkoxide precursors. Samples coated either with Y{sub 2}SiO{sub 5} or Y{sub 2}Si{sub 2}O{sub 7} were investigated using thermogravimetric high temperature oxidation in the temperature range from 1450 C to 1650 C, respectively. The coated samples exhibited very good oxidation resistance up to temperatures of 1600 C, while the performance was reduced at 1650 C to a few hours. All samples showed a parabolic mass increase with time indicating a diffusion limited process governing the oxidation kinetics. The cross sections of the samples show a sharp border between the SiO{sub 2} that crystallizes to cristobalite and the

  20. Pd/CeO2/SiC Chemical Sensors

    Science.gov (United States)

    Lu, Weijie; Collins, W. Eugene

    2005-01-01

    The incorporation of nanostructured interfacial layers of CeO2 has been proposed to enhance the performances of Pd/SiC Schottky diodes used to sense hydrogen and hydrocarbons at high temperatures. If successful, this development could prove beneficial in numerous applications in which there are requirements to sense hydrogen and hydrocarbons at high temperatures: examples include monitoring of exhaust gases from engines and detecting fires. Sensitivity and thermal stability are major considerations affecting the development of high-temperature chemical sensors. In the case of a metal/SiC Schottky diode for a number of metals, the SiC becomes more chemically active in the presence of the thin metal film on the SiC surface at high temperature. This increase in chemical reactivity causes changes in chemical composition and structure of the metal/SiC interface. The practical effect of the changes is to alter the electronic and other properties of the device in such a manner as to degrade its performance as a chemical sensor. To delay or prevent these changes, it is necessary to limit operation to a temperature sensor structures. The present proposal to incorporate interfacial CeO2 films is based partly on the observation that nanostructured materials in general have potentially useful electrical properties, including an ability to enhance the transfer of electrons. In particular, nanostructured CeO2, that is CeO2 with nanosized grains, has shown promise for incorporation into hightemperature electronic devices. Nanostructured CeO2 films can be formed on SiC and have been shown to exhibit high thermal stability on SiC, characterized by the ability to withstand temperatures somewhat greater than 700 C for limited times. The exchanges of oxygen between CeO2 and SiC prevent the formation of carbon and other chemical species that are unfavorable for operation of a SiC-based Schottky diode as a chemical sensor. Consequently, it is anticipated that in a Pd/CeO2/SiC Schottky

  1. Effect of heat treatment on microstructure and mechanical properties of PIP-SiC/SiC composites

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Shuang, E-mail: zhsh6007@126.com [Key Laboratory of Advanced Ceramic Fibres and Composites, College of Aerospace and Materials Engineering, National University of Defense Technology, Changsha 410073 (China); School of Mechanical, Aerospace, and Civil Engineering, University of Manchester, Manchester M13 9PL (United Kingdom); Zhou, Xingui; Yu, Jinshan [Key Laboratory of Advanced Ceramic Fibres and Composites, College of Aerospace and Materials Engineering, National University of Defense Technology, Changsha 410073 (China); Mummery, Paul [School of Mechanical, Aerospace, and Civil Engineering, University of Manchester, Manchester M13 9PL (United Kingdom)

    2013-01-01

    Continuous SiC fibre reinforced SiC matrix composites (SiC/SiC) have been studied as materials for heat resistant and nuclear applications. Thermal stability is one of the key issues for SiC/SiC composites. In this study, 3D SiC/SiC composites are fabricated via the polymer impregnation and pyrolysis (PIP) process, and then heat treated at 1400 Degree-Sign C, 1600 Degree-Sign C and 1800 Degree-Sign C in an inert atmosphere for 1 h, respectively. The effect of heat treatment on microstructure and mechanical properties of the composites is investigated. The results indicate that the mechanical properties of the SiC/SiC composites are significantly improved after heat treatment at 1400 Degree-Sign C mainly because the mechanical properties of the matrix are greatly improved due to crystallisation. With the increasing of heat treatment temperature, the properties of the composites are conversely decreased because of severe damage of the fibres and the matrix.

  2. Si-H bond dynamics in hydrogenated amorphous silicon

    Science.gov (United States)

    Scharff, R. Jason; McGrane, Shawn D.

    2007-08-01

    The ultrafast structural dynamics of the Si-H bond in the rigid solvent environment of an amorphous silicon thin film is investigated using two-dimensional infrared four-wave mixing techniques. The two-dimensional infrared (2DIR) vibrational correlation spectrum resolves the homogeneous line shapes ( 4ps waiting times. The Si-H stretching mode anharmonic shift is determined to be 84cm-1 and decreases slightly with vibrational frequency. The 1→2 linewidth increases with vibrational frequency. Frequency dependent vibrational population times measured by transient grating spectroscopy are also reported. The narrow homogeneous line shape, large inhomogeneous broadening, and lack of spectral diffusion reported here present the ideal backdrop for using a 2DIR probe following electronic pumping to measure the transient structural dynamics implicated in the Staebler-Wronski degradation [Appl. Phys. Lett. 31, 292 (1977)] in a-Si:H based solar cells.

  3. Nickel-Catalyzed C-S Bond Formation via Decarbonylative Thioetherification of Esters, Amides and Intramolecular Recombination Fragment Coupling of Thioesters

    KAUST Repository

    Lee, Shao-Chi

    2018-01-15

    A nickel catalyzed cross-coupling protocol for the straightforward C-S bond formation has been developed. Various mercaptans and a wide range of ester and amide substrates bearing various substituents were tolerated in this process which afforded products in good to excellent yields. Furthermore, an intramolecular protocol for the synthesis of thioethers starting from thioesters has been developed. The utility of this protocol has been demonstrated in the synthesis of benzothiophene on the bench top.

  4. Nickel-Catalyzed C-S Bond Formation via Decarbonylative Thioetherification of Esters, Amides and Intramolecular Recombination Fragment Coupling of Thioesters

    KAUST Repository

    Lee, Shao-Chi; Liao, Hsuan-Hung; Chatupheeraphat, Adisak; Rueping, Magnus

    2018-01-01

    A nickel catalyzed cross-coupling protocol for the straightforward C-S bond formation has been developed. Various mercaptans and a wide range of ester and amide substrates bearing various substituents were tolerated in this process which afforded products in good to excellent yields. Furthermore, an intramolecular protocol for the synthesis of thioethers starting from thioesters has been developed. The utility of this protocol has been demonstrated in the synthesis of benzothiophene on the bench top.

  5. Preparation of SiC thin films by ion beam technology and PECVD

    International Nuclear Information System (INIS)

    Chen Changqing; Ren Congxin; Yang Lixin; Yan Jinlong; Zheng Zhihong; Zhou Zuyao; Chen Ping; Liu Xianghuai; Chen Xueliang

    1998-01-01

    The formation of β-SiC buried layers in p-type Si by ion beam methods is reported and a comparison of the results obtained under different experimental conditions is made. The preparation of amorphous SiC thin films by IBED is presented and the enhanced deposition of Xe + is found superior to that of Ar + . The work of synthesizing hydrogenated amorphous SiC films by RIBS and RIBAD is described with a discussion on the dependence of some physical parameters on the partial pressure ratio pCH 4 /pAr. Finally given is a brief introduction to a high quality α-SiC:H film which is prepared by PECVD and can exhibit green luminescence at room temperature

  6. Residual stresses and mechanical properties of Si3N4/SiC multilayered composites with different SiC layers

    International Nuclear Information System (INIS)

    Liua, S.; Lia, Y.; Chena, P.; Lia, W.; Gaoa, S.; Zhang, B.; Yeb, F.

    2017-01-01

    The effect of residual stresses on the strength, toughness and work of fracture of Si3N4/SiC multilayered composites with different SiC layers has been investigated. It may be an effective way to design and optimize the mechanical properties of Si3N4/SiC multilayered composites by controlling the properties of SiC layers. Si3N4/SiC multilayered composites with different SiC layers were fabricated by aqueous tape casting and pressureless sintering. Residual stresses were calculated by using ANSYS simulation, the maximum values of tensile and compressive stresses were 553.2MPa and −552.1MPa, respectively. Step-like fracture was observed from the fracture surfaces. Fraction of delamination layers increased with the residual stress, which can improve the reliability of the materials. Tensile residual stress was benefit to improving toughness and work of fracture, but the strength of the composites decreased. [es

  7. Effect of Si additions on thermal stability and the phase transition sequence of sputtered amorphous alumina thin films

    International Nuclear Information System (INIS)

    Bolvardi, H.; Baben, M. to; Nahif, F.; Music, D.; Schnabel, V.; Shaha, K. P.; Mráz, S.; Schneider, J. M.; Bednarcik, J.; Michalikova, J.

    2015-01-01

    Si-alloyed amorphous alumina coatings having a silicon concentration of 0 to 2.7 at. % were deposited by combinatorial reactive pulsed DC magnetron sputtering of Al and Al-Si (90-10 at. %) split segments in Ar/O 2 atmosphere. The effect of Si alloying on thermal stability of the as-deposited amorphous alumina thin films and the phase formation sequence was evaluated by using differential scanning calorimetry and X-ray diffraction. The thermal stability window of the amorphous phase containing 2.7 at. % of Si was increased by more than 100 °C compared to that of the unalloyed phase. A similar retarding effect of Si alloying was also observed for the α-Al 2 O 3 formation temperature, which increased by more than 120 °C. While for the latter retardation, the evidence for the presence of SiO 2 at the grain boundaries was presented previously, this obviously cannot explain the stability enhancement reported here for the amorphous phase. Based on density functional theory molecular dynamics simulations and synchrotron X-ray diffraction experiments for amorphous Al 2 O 3 with and without Si incorporation, we suggest that the experimentally identified enhanced thermal stability of amorphous alumina with addition of Si is due to the formation of shorter and stronger Si–O bonds as compared to Al–O bonds

  8. Effect of Si additions on thermal stability and the phase transition sequence of sputtered amorphous alumina thin films

    Energy Technology Data Exchange (ETDEWEB)

    Bolvardi, H.; Baben, M. to; Nahif, F.; Music, D., E-mail: music@mch.rwth-aachen.de; Schnabel, V.; Shaha, K. P.; Mráz, S.; Schneider, J. M. [Materials Chemistry, RWTH Aachen University, Kopernikusstr. 10, D-52074 Aachen (Germany); Bednarcik, J.; Michalikova, J. [Deutsches Elektronen Synchrotron DESY, FS-PE group, Notkestrasse 85, D-22607 Hamburg (Germany)

    2015-01-14

    Si-alloyed amorphous alumina coatings having a silicon concentration of 0 to 2.7 at. % were deposited by combinatorial reactive pulsed DC magnetron sputtering of Al and Al-Si (90-10 at. %) split segments in Ar/O{sub 2} atmosphere. The effect of Si alloying on thermal stability of the as-deposited amorphous alumina thin films and the phase formation sequence was evaluated by using differential scanning calorimetry and X-ray diffraction. The thermal stability window of the amorphous phase containing 2.7 at. % of Si was increased by more than 100 °C compared to that of the unalloyed phase. A similar retarding effect of Si alloying was also observed for the α-Al{sub 2}O{sub 3} formation temperature, which increased by more than 120 °C. While for the latter retardation, the evidence for the presence of SiO{sub 2} at the grain boundaries was presented previously, this obviously cannot explain the stability enhancement reported here for the amorphous phase. Based on density functional theory molecular dynamics simulations and synchrotron X-ray diffraction experiments for amorphous Al{sub 2}O{sub 3} with and without Si incorporation, we suggest that the experimentally identified enhanced thermal stability of amorphous alumina with addition of Si is due to the formation of shorter and stronger Si–O bonds as compared to Al–O bonds.

  9. On the interplay between Si(110) epilayer atomic roughness and subsequent 3C-SiC growth direction

    Science.gov (United States)

    Khazaka, Rami; Michaud, Jean-François; Vennéguès, Philippe; Nguyen, Luan; Alquier, Daniel; Portail, Marc

    2016-11-01

    In this contribution, we performed the growth of a 3C-SiC/Si/3C-SiC layer stack on a Si(001) substrate by means of chemical vapor deposition. We show that, by tuning the growth conditions, the 3C-SiC epilayer can be grown along either the [111] direction or the [110] direction. The key parameter for the growth of the desired 3C-SiC orientation on the Si(110)/3C-SiC(001)/Si(001) heterostructure is highlighted and is linked to the Si epilayer surface morphology. The epitaxial relation between the layers has been identified using X-ray diffraction and transmission electron microscopy (TEM). We showed that, regardless of the top 3C-SiC epilayer orientation, domains rotated by 90° around the growth direction are present in the epilayer. Furthermore, the difference between the two 3C-SiC orientations was investigated by means of high magnification TEM. The results indicate that the faceted Si(110) epilayer surface morphology results in a (110)-oriented 3C-SiC epilayer, whereas a flat hetero-interface has been observed between 3C-SiC(111) and Si(110). The control of the top 3C-SiC growth direction can be advantageous for the development of new micro-electro-mechanical systems.

  10. Enhanced TiC/SiC Ohmic contacts by ECR hydrogen plasma pretreatment and low-temperature post-annealing

    International Nuclear Information System (INIS)

    Liu, Bingbing; Qin, Fuwen; Wang, Dejun

    2015-01-01

    Highlights: • Low-temperature ECR microwave hydrogen plasma were pretreated for moderately doped (1 × 10"1"8 cm"−"3) SiC surfaces. • The relationship among Ohmic properties, the SiC surface properties and TiC/SiC interface properties were established. • Interface band structures were analyzed to elucidate the mechanism by which the Ohmic contacts were formed. - Abstract: We proposed an electronic cyclotron resonance (ECR) microwave hydrogen plasma pretreatment (HPT) for moderately doped (1 × 10"1"8 cm"−"3) SiC surfaces and formed ideal TiC/SiC Ohmic contacts with significantly low contact resistivity (1.5 × 10"−"5 Ω cm"2) after low-temperature annealing (600 °C). This is achieved by reducing barrier height at TiC/SiC interface because of the release of pinned Fermi level by surface flattening and SiC surface states reduction after HPT, as well as the generation of donor-type carbon vacancies, which reduced the depletion-layer width for electron tunneling after annealing. Interface band structures were analyzed to elucidate the mechanism of Ohmic contact formations.

  11. Microstructure and fracture in SiC whisker reinforced 2124 aluminum composite

    Science.gov (United States)

    Nieh, T. G.; Raninen, R. A.; Chellman, D. J.

    1985-01-01

    The microstructures of extruded and hot-rolled 2124 Al-15 percent (by weight) SiC whisker composites have been investigated, experimentally. Among the specific factors studied were: the strength of the whisker-matrix interfaces; (2) the presence of oxides; (3) the presence of defective whiskers; (4) and the presence of distribution of intermetallic compounds, impurities in the SiC(w) powder, and microstructural inhomogeneities. Modifications in the microstructure of the SiC/AL composites due to hot rolling and extrusion are illustrated in a series of microphotographs. It was found that hot rolling along the axis of extrusion was associated with some types of whisker damage, while the whiskers still retain their original orientation. Hot-rolling perpendicular to the axis of extrusion, however, tended to rotate the whiskers and produced a nearly isotropic material. Whisker free zones were virtually eliminated or reduced in size by hot rolling. In situ Auger fractography of the composite showed that the interfacial bonding between the SiC and the Al matrix was good and that Al2O2 had no significant influence on the fracture mechanics of the composite.

  12. Effects of Preform Density on Structure and Property of C/C-SiC Composites Fabricated by Gaseous Silicon Infiltration

    Directory of Open Access Journals (Sweden)

    CAO Yu

    2016-07-01

    Full Text Available The 3-D needled C/C preforms with different densities deposited by chemical vapor infiltration (CVI method were used to fabricate C/C-SiC composites by gaseous silicon infiltration (GSI. The porosity and CVI C thickness of the preforms were studied, and the effects of preform density on the mechanical and thermal properties of C/C-SiC composites were analyzed. The results show that with the increase of preform density, the preform porosity decreases and the CVI C thickness increases from several hundred nanometers to several microns. For the C/C-SiC composites, as the preform density increases, the residual C content increases while the density and residual Si content decreases. The SiC content first keeps at a high level of about 40% (volume fraction, which then quickly reduces. Meanwhile, the mechanical properties increase to the highest values when the preform density is 1.085g/cm3, with the flexure strength up to 308.31MP and fracture toughness up to 11.36MPa·m1/2, which then decrease as the preform density further increases. The thermal conductivity and CTE of the composites, however, decrease with the increase of preform density. It is found that when the preform porosity is too high, sufficient infiltration channels lead to more residual Si, and thinner CVI C thickness results in the severe corrosion of the reinforcing fibers by Si and lower mechanical properties. When the preform porosity is relatively low, the contents of Si and SiC quickly reduce since the infiltration channels are rapidly blocked, resulting in the formation of large closed pores and not high mechanical properties.

  13. Diodes of nanocrystalline SiC on n-/n+-type epitaxial crystalline 6H-SiC

    Science.gov (United States)

    Zheng, Junding; Wei, Wensheng; Zhang, Chunxi; He, Mingchang; Li, Chang

    2018-03-01

    The diodes of nanocrystalline SiC on epitaxial crystalline (n-/n+)6H-SiC wafers were investigated, where the (n+)6H-SiC layer was treated as cathode. For the first unit, a heavily boron doped SiC film as anode was directly deposited by plasma enhanced chemical vapor deposition method on the wafer. As to the second one, an intrinsic SiC film was fabricated to insert between the wafer and the SiC anode. The third one included the SiC anode, an intrinsic SiC layer and a lightly phosphorus doped SiC film besides the wafer. Nanocrystallization in the yielded films was illustrated by means of X-ray diffraction, transmission electronic microscope and Raman spectrum respectively. Current vs. voltage traces of the obtained devices were checked to show as rectifying behaviors of semiconductor diodes, the conduction mechanisms were studied. Reverse recovery current waveforms were detected to analyze the recovery performance. The nanocrystalline SiC films in base region of the fabricated diodes are demonstrated as local regions for lifetime control of minority carriers to improve the reverse recovery properties.

  14. Laser alloying of AI with mixed Ni, Ti and SiC powders

    CSIR Research Space (South Africa)

    Mabhali, Luyolo AB

    2010-03-01

    Full Text Available composite (MMC) is formed. The MMC layer has excellent hardness and wear resistance compared to the base alloy [9-13]. Man et al. [14] used a high power continuous wave Nd:YAG laser to alloy aluminium AA 6061 with preplaced NiTi (54 wt% Ni & 46 wt...Al, Ti3Al, SiC, Al and Si phases. The hardness increased from 75HV to 650HV due to the formation of the TiC particles and TiAl and Ti3Al intermetallics. Su and Lei [9] laser cladded Al-12wt%Si with a powder containing SiC and Al-12wt%Si in a 3...

  15. Microscopic and macroscopic characterization of the charging effects in SiC/Si nanocrystals/SiC sandwiched structures

    International Nuclear Information System (INIS)

    Xu, Jie; Xu, Jun; Wang, Yuefei; Cao, Yunqing; Li, Wei; Yu, Linwei; Chen, Kunji

    2014-01-01

    Microscopic charge injection into the SiC/Si nanocrystals/SiC sandwiched structures through a biased conductive AFM tip is subsequently characterized by both electrostatic force microscopy and Kelvin probe force microscopy (KPFM). The charge injection and retention characteristics are found to be affected by not only the band offset at the Si nanocrystals/SiC interface but also the doping type of the Si substrate. On the other hand, capacitance–voltage (C–V) measurements investigate the macroscopic charging effect of the sandwiched structures with a thicker SiC capping layer, where the charges are injected from the Si substrates. The calculated macroscopic charging density is 3–4 times that of the microscopic one, and the possible reason is the underestimation of the microscopic charging density caused by the averaging effect and detection delay in the KPFM measurements. (paper)

  16. Betavoltaic device in por-SiC/Si C-Nuclear Energy Converter

    Directory of Open Access Journals (Sweden)

    Akimchenko Alina

    2017-01-01

    Full Text Available The miniature and low-power devices with long service life in hard operating conditions like the Carbon-14 beta-decay energy converters indeed as eternal resource for integrated MEMS and NEMS are considered. Authors discuss how to create the power supply for MEMS/NEMS devices, based on porous SiC/Si structure, which are tested to be used as the beta-decay energy converters of radioactive C-14 into electrical energy. This is based on the silicon carbide obtaining by self-organizing mono 3C-SiC endotaxy on the Si substrate. The new idea is the C-14 atoms including in molecules in the silicon carbide porous structure by this technology, which will increase the efficiency of the converter due to the greater intensity of electron-hole pairs generation rate in the space charge region. The synthesis of C-14 can be also performed by using the electronically controlled magneto-optic chamber.

  17. The corrosion behavior of CVI SiC matrix in SiC{sub f}/SiC composites under molten fluoride salt environment

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Hongda [Structural Ceramics and Composites Engineering Research Center, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); School of Graduate, University of Chinese Academy of Sciences, Beijing 100049 (China); Feng, Qian [Analysis and Testing Center, Donghua University, Shanghai 201600 (China); Wang, Zhen, E-mail: jeff@mail.sic.ac.cn [Structural Ceramics and Composites Engineering Research Center, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); Zhou, Haijun; Kan, Yanmei; Hu, Jianbao [Structural Ceramics and Composites Engineering Research Center, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); Dong, Shaoming, E-mail: smdong@mail.sic.ac.cn [Structural Ceramics and Composites Engineering Research Center, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China)

    2017-04-15

    High temperature corrosion behavior and microstructural evolution of designed chemical-vapor-infiltrated SiC matrix in SiC fiber reinforced SiC ceramic matrix composites in 46.5LiF-11.5NaF-42.0KF (mol. %) eutectic salt at 800 °C for various corrosion time was studied. Worse damage was observed as extending the exposure time, with the mass loss ratio increasing from 0.716 wt. % for 50 h to 5.914 wt. % for 500 h. The mass loss rate showed a trend of first decrease and then increase with the extended corrosion exposure. Compared with the near-stoichiometric SiC matrix layers, the O-contained boundaries between deposited matrix layers and the designed Si-rich SiC matrix layers were much less corrosion resistant and preferentially corroded. Liner relationship between the mass loss ratio and the corrosion time obtained from 50 h to 300 h indicated that the corrosion action was reaction-control process. Further corrosion would lead to matrix layer exfoliation and higher mass loss ratio.

  18. Structural, electronic, elastic, and thermodynamic properties of CaSi, Ca2Si, and CaSi2 phases from first-principles calculations

    Science.gov (United States)

    Li, X. D.; Li, K.; Wei, C. H.; Han, W. D.; Zhou, N. G.

    2018-06-01

    The structural, electronic, elastic, and thermodynamic properties of CaSi, Ca2Si, and CaSi2 are systematically investigated by using first-principles calculations method based on density functional theory (DFT). The calculated formation enthalpies and cohesive energies show that CaSi2 possesses the greatest structural stability and CaSi has the strongest alloying ability. The structural stability of the three phases is compared according to electronic structures. Further analysis on electronic structures indicates that the bonding of these phases exhibits the combinations of metallic, covalent, and ionic bonds. The elastic constants are calculated, and the bulk modulus, shear modulus, Young's modulus, Poisson's ratio, and anisotropy factor of polycrystalline materials are deduced. Additionally, the thermodynamic properties were theoretically predicted and discussed.

  19. Residual stresses and mechanical properties of Si3N4/SiC multilayered composites with different SiC layers; Las tensiones residuales y las propiedades mecánicas de compuestos multicapa de Si3N4/SiC con diferentes capas de SiC

    Energy Technology Data Exchange (ETDEWEB)

    Liua, S.; Lia, Y.; Chena, P.; Lia, W.; Gaoa, S.; Zhang, B.; Yeb, F.

    2017-11-01

    The effect of residual stresses on the strength, toughness and work of fracture of Si3N4/SiC multilayered composites with different SiC layers has been investigated. It may be an effective way to design and optimize the mechanical properties of Si3N4/SiC multilayered composites by controlling the properties of SiC layers. Si3N4/SiC multilayered composites with different SiC layers were fabricated by aqueous tape casting and pressureless sintering. Residual stresses were calculated by using ANSYS simulation, the maximum values of tensile and compressive stresses were 553.2MPa and −552.1MPa, respectively. Step-like fracture was observed from the fracture surfaces. Fraction of delamination layers increased with the residual stress, which can improve the reliability of the materials. Tensile residual stress was benefit to improving toughness and work of fracture, but the strength of the composites decreased. [Spanish] Se ha investigado el efecto de las tensiones residuales en la resistencia, dureza y trabajo de fractura de los compuestos multicapa de Si3N4/SiC con diferentes capas de SiC. Puede ser una manera eficaz de diseñar y optimizar las propiedades mecánicas de los compuestos multicapa de Si3N4/SiC mediante el control de las propiedades de las capas de SiC. Los compuestos multicapa de Si3N4/SiC con diferentes capas de SiC se fabricaron por medio de colado en cinta en medio acuoso y sinterización sin presión. Las tensiones residuales se calcularon mediante el uso de la simulación ANSYS, los valores máximos de las fuerzas de tracción y compresión fueron 553,2 MPa y −552,1 MPa, respectivamente. Se observó una fractura escalonada a partir de las superficies de fractura. La fracción de capas de deslaminación aumenta con la tensión residual, lo que puede mejorar la fiabilidad de los materiales. La fuerza de tracción residual era beneficiosa para la mejora de la dureza y el trabajo de fractura, pero la resistencia de los compuestos disminuyó.

  20. EBSD characterization of the growth mechanism of SiC synthesized via direct microwave heating

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Jigang, E-mail: wangjigang@seu.edu.cn [Jiangsu Key Laboratory of Advanced Metallic Materials, School of Materials Science and Engineering, Southeast University, Nanjing 211189 (China); Xizang Key Laboratory of Optical Information Processing and Visualization Technology, School of Information Engineering, Xizang Minzu University, Xianyang 712082 (China); Huang, Shan; Liu, Song; Qing, Zhou [Jiangsu Key Laboratory of Advanced Metallic Materials, School of Materials Science and Engineering, Southeast University, Nanjing 211189 (China)

    2016-04-15

    Well-crystallized 3C-silicon carbide (SiC) grains/nanowires have been synthesized rapidly and conveniently via direct microwave heating, simply using silicon dioxide powders and artificial graphite as raw materials. The comprehensive characterizations have been employed to investigate the micro-structure of the obtained 3C-SiC products. Results indicated that, different from the classic screw dislocation growth mechanism, the 3C-SiC grains/nanowires synthesized via high-energy vacuum microwave irradiation were achieved through the two-dimension nucleation and laminar growth mechanism. Especially, the electron backscattered diffraction (EBSD) was employed to characterize the crystal planes of the as-grown SiC products. The calculated Euler angles suggested that the fastest-growing crystal planes (211) were overlapped gradually. Through the formation of the (421) transformation plane, (211) finally evolved to (220) which existed as the side face of SiC grains. The most stable crystal planes (111) became the regular hexagonal planes in the end, which could be explained by the Bravais rule. The characterization results of EBSD provided important experimental information for the evolution of crystal planes. - Graphical abstract: The formation of 3C-SiC prepared via direct microwave heating follows the mechanism of two-dimension nucleation and laminar growth. - Highlights: • 3C−SiC grains/nanowires were obtained via direct microwave heating. • 3C−SiC followed the mechanism of two-dimension nucleation and laminar growth. • In-situ EBSD analysis provided the experimental evidences of the growth.

  1. Effects of SiC amount on phase compositions and properties of Ti3SiC2-based composites

    Institute of Scientific and Technical Information of China (English)

    蔡艳芝; 殷小玮; 尹洪峰

    2015-01-01

    The phase compositions and properties of Ti3SiC2-based composites with SiC addition of 5%−30% in mass fraction fabricated by in-situ reaction and hot pressing sintering were studied. SiC addition effectively prevented TiC synthesis but facilitated SiC synthesis. The Ti3SiC2/TiC−SiC composite had better oxidation resistance when SiC added quantity reached 20% but poorer oxidation resistance with SiC addition under 15%than Ti3SiC2/TiC composite at higher temperatures. There were more than half of the original SiC and a few Ti3SiC2 remaining in Ti3SiC2/TiC−SiC with 20% SiC addition, but all constituents in Ti3Si2/TiC composite were oxidized after 12 h in air at 1500 °C. The oxidation scale thickness of TS30, 1505.78μm, was near a half of that of T, 2715μm, at 1500 °C for 20 h. Ti3SiC2/TiC composite had a flexural strength of 474 MPa, which was surpassed by Ti3SiC2/TiC−SiC composites when SiC added amount reached 15%. The strength reached the peak of 518 MPa at 20%SiC added amount.

  2. Synthesis of SiC microstructures in Si technology by high dose carbon implantation: Etch-stop properties

    International Nuclear Information System (INIS)

    Serre, C.; Perez-Rodriguez, A.; Romano-Rodriguez, A.; Calvo-Barrio, L.; Morante, J.R.; Esteve, J.; Acero, M.C.; Skorupa, W.; Koegler, R.

    1997-01-01

    The use of high dose carbon ion implantation in Si for the production of membranes and microstructures is investigated. Si wafers were implanted with carbon doses of 10 17 and 5 x 10 17 cm -2 , at an energy of 300 keV and a temperature of 500 C. The structural analysis of these samples revealed the formation of a highly stable buried layer of crystalline β-SiC precipitates aligned with the Si matrix. The etch-stop properties of this layer have been investigated using tetramethyl-ammonium hydroxide as etchant solution. Secondary ion mass spectrometry measurements performed on the etched samples have allowed an estimate of the minimum dose needed for obtaining an etch-stop layer to a value in the range 2 to 3 x 10 17 ions/cm 2 . This behavior has been explained assuming the existence of a percolation process in a SiC/Si binary system. Finally, very thin crystalline membranes and self-standing structures with average surface roughness in the range 6 to 7 nm have been obtained

  3. Characterization of SiC based composite materials by the infiltration of ultra-fine SiC particles

    International Nuclear Information System (INIS)

    Lee, J.K.; Lee, S.P.; Byun, J.H.

    2010-01-01

    The fabrication route of SiC materials by the complex compound of ultra-fine SiC particles and oxide additive materials has been investigated. Especially, the effect of additive composition ratio on the characterization of SiC materials has been examined. The characterization of C/SiC composites reinforced with plain woven carbon fabrics was also investigated. The fiber preform for C/SiC composites was prepared by the infiltration of complex mixture into the carbon fabric structure. SiC based composite materials were fabricated by a pressure assisted liquid phase sintering process. SiC materials possessed a good density higher than about 3.0 Mg/m 3 , accompanying the creation of secondary phase by the chemical reaction of additive materials. C/SiC composites also represented a dense morphology in the intra-fiber bundle region, even if this material had a sintered density lower than that of monolithic SiC materials. The flexural strength of SiC materials was greatly affected by the composition ratio of additive materials.

  4. The diffusion bonding of silicon carbide and boron carbide using refractory metals

    International Nuclear Information System (INIS)

    Cockeram, B.V.

    1999-01-01

    Joining is an enabling technology for the application of structural ceramics at high temperatures. Metal foil diffusion bonding is a simple process for joining silicon carbide or boron carbide by solid-state, diffusive conversion of the metal foil into carbide and silicide compounds that produce bonding. Metal diffusion bonding trials were performed using thin foils (5 microm to 100 microm) of refractory metals (niobium, titanium, tungsten, and molybdenum) with plates of silicon carbide (both α-SiC and β-SiC) or boron carbide that were lapped flat prior to bonding. The influence of bonding temperature, bonding pressure, and foil thickness on bond quality was determined from metallographic inspection of the bonds. The microstructure and phases in the joint region of the diffusion bonds were evaluated using SEM, microprobe, and AES analysis. The use of molybdenum foil appeared to result in the highest quality bond of the metal foils evaluated for the diffusion bonding of silicon carbide and boron carbide. Bonding pressure appeared to have little influence on bond quality. The use of a thinner metal foil improved the bond quality. The microstructure of the bond region produced with either the α-SiC and β-SiC polytypes were similar

  5. Remote plasma enhanced chemical deposition of non-crystalline GeO2 on Ge and Si substrates.

    Science.gov (United States)

    Lucovsky, Gerald; Zeller, Daniel

    2011-09-01

    Non-crystalline GeO2 films remote were plasma deposited at 300 degrees C onto Ge substrates after a final rinse in NH4OH. The reactant precursors gas were: (i) down-stream injected 2% GeH4 in He as the Ge precursor, and (ii) up-stream, plasma excited O2-He mixtures as the O precursor. Films annealed at 400 degrees C displayed no evidence for loss of O resulting in Ge sub-oxide formation, and for a 5-6 eV mid-gap absorption associated with formation of GeOx suboxide bonding, x deposited on Ge and annealed at 600 degrees C and 700 degrees C display spectra indicative of loss of O-atoms, accompanied with a 5.5 eV absorption. X-ray absorption spectroscopy and many-electron theory are combined to describe symmetries and degeneracies for O-vacancy bonding defects. These include comparisons with remote plasma-deposited non-crystalline SiO2 on Si substrates with SiON interfacial layers. Three different properties of remote plasma GeO2 films are addressed comparisons between (i) conduction band and band edge states of GeO2 and SiO2, and (ii) electronic structure of O-atom vacancy defects in GeO2 and SiO2, and differences between (iii) annealing of GeO2 films on Ge substrates, and Si substrates passivated with SiON interfacial transition regions important for device applications.

  6. Passivation of defect states in Si and Si/SiO2 interface states by cyanide treatment: improvement of characteristics of pin-junction amorphous Si and crystalline Si-based metal-oxide-semiconductor junction solar cells

    International Nuclear Information System (INIS)

    Fujiwara, N.; Fujinaga, T.; Niinobe, D.; Maida, O.; Takahashi, M.; Kobayashi, H.

    2003-01-01

    Defect states in Si can be passivated by cyanide treatment which simply involves immersion of Si materials in KCN solutions, followed by rinse. When the cyanide treatment is applied to pin-junction amorphous Si [a-Si] solar cells, the initial conversion efficiency increases. When the crown-ether cyanide treatment using a KCN solution of xylene containing 18-crown-6 is performed on i-a-Si films, decreases in the photo- and dark current densities with the irradiation time are prevented. The cyanide treatment can also passivate interface states present at Si/SiO 2 interfaces, leading to an increase in the conversion efficiency of 2 / Si (100)> solar cells.. Si-CN bonds formed by the reaction of defect states with cyanide ions have a high bond energy of about 4.5 eV and hence heat treatment at 800 0 C does not rupture the bonds, making thermal stability of the cyanide treatment.. When the cyanide treatment is applied to ultrathin SiO 2 /Si structure, the leakage current density is markedly decreased (Authors)

  7. Effects of dual-ion irradiation on the swelling of SiC/SiC composites

    International Nuclear Information System (INIS)

    Kishimoto, Hirotatsu; Kohyama, Akira; Ozawa, Kazumi; Kondo, Sosuke

    2005-01-01

    Silicon carbide (SiC) matrix composites reinforced by SiC fibers is a candidate structural material of fusion gas-cooled blanket system. From the viewpoint of material designs, it is important to investigate the swelling by irradiation, which results from the accumulation of displacement damages. In the fusion environment, (n, α) nuclear reactions are considered to produce helium gas in SiC. For the microstructural evolution, a dual-ion irradiation method is able to simulate the effects of helium. In the present research, 1.7 MeV tandem and 1 MeV single-end accelerators were used for Si self-ion irradiation and helium implantation, respectively. The average helium over displacement per atom (dpa) ratio in SiC was adjusted to 60 appm/dpa. The irradiation temperature ranged from room temperature to 1400degC. The irradiation-induced swelling was measured by the step height method. Helium that was implanted simultaneously with displacement damages in dual-ion irradiated SiC increased the swelling that was larger than that by single-ion irradiated SiC below 800degC. Since this increase was not observed above 1000degC, the interaction of helium and displacement damages was considered to change above 800degC. In this paper, the microstructural behavior and dimensional stability of SiC materials under the fusion relevant environment are discussed. (author)

  8. Thickness dependent formation and properties of GdSi2/Si(100) interfaces

    International Nuclear Information System (INIS)

    Peto, G.; Molnar, G.; Dozsa, L.; Horvath, Z.E.; Horvath, Zs.J.; Zsoldos, E.; Dimitriadis, C.A.; Papadimitriou, L.

    2005-01-01

    Epitaxial and polycrystalline orthorhombic GdSi 2 films were grown on Si(100) substrates by solid phase reaction between Si and Gd films at different thicknesses of the Gd film. The most important property of these GdSi 2 /Si interfaces was defect formation. This was investigated by studying the properties of the Schottky barriers by means of current voltage and capacitance-voltage characteristics, deep level transient spectroscopy by double crystal X-ray diffractometry, and transmission electron microscopy. Epitaxial growth of the silicide layer ensured a relatively low interface defect density (about 10 10 cm -2 ), while the non-epitaxial growth induced defects of a much higher density (about 10 12 cm -2 ). The defects generated during the silicide formation are located within a depth of about 10 nm from the GdSi 2 /Si interface. (orig.)

  9. Synthesis and characterization of Yb and Er based monosilicate powders and durability of plasma sprayed Yb2SiO5 coatings on C/C–SiC composites

    International Nuclear Information System (INIS)

    Khan, Zuhair S.; Zou Binglin; Huang Wenzhi; Fan Xizhi; Gu Lijian; Chen Xiaolong; Zeng Shuibing; Wang Chunjie; Cao Xueqiang

    2012-01-01

    Highlights: ► Ultra-pure rare-earth monosilicate powders based on Er and Yb have been fabricated by solid-state reaction. ► Spray-drying treatment results in powders with free flowing characteristics and rounded surface morphologies. ► CTEs are found to be 7.1 ppm/°C for Yb 2 SiO 5 and 7.5 ppm/°C for Er 2 SiO 5 . ► Plasma spraying has been used to deposit Yb 2 SiO 5 coatings on C/C–SiC substrate. ► Coatings remain strongly intact with the substrate on thermal cycling between ∼400 °C and 1500 °C in gas burner rig experiment. - Abstract: Rare-earth silicates such as Yb 2 SiO 5 and Er 2 SiO 5 are promising environmental barrier coating materials for ceramic matrix composites. In this work, Yb 2 SiO 5 and Er 2 SiO 5 ceramic powders have been synthesized by solid-state reaction using Yb 2 O 3 , Er 2 O 3 and SiO 2 as starting materials. The fabricated powders were subjected to spray drying treatment for subsequent synthesis of coatings by plasma spraying. The spray drying resulted in well-dispersed and spherical powder particles with good flowability. Analytical techniques such as X-ray diffraction (XRD), scanning electron microscopy (SEM), thermogravimetry and differential scanning calorimetry (TGA/DSC) and dilatometry were applied to study the microstructural and thermal characteristics of the powders. Ultra-high purity monosilicate powders formed as a result of heating treatments at 1400 °C in a box furnace for 20 h. TG/DSC revealed the genesis temperatures of the silicate formation (low temperature polymorphs) and also showed that the solid-state reactions to form Yb and Er based monosilicates proceeded without any weight-loss in the tested temperature range. The values of coefficients of thermal expansion (CTE) of the fabricated compounds are found to be 7.1 ppm/°C for Yb 2 SiO 5 and 7.5 ppm/°C for Er 2 SiO 5 by dilatometric measurements. Besides these studies, coating formation by plasma spraying of spray-dried Yb 2 SiO 5 powders on the ceramic

  10. Initial assessment of environmental effects on SiC/SiC composites in helium-cooled nuclear systems

    Energy Technology Data Exchange (ETDEWEB)

    Contescu, Cristian I [ORNL

    2013-09-01

    This report summarized the information available in the literature on the chemical reactivity of SiC/SiC composites and of their components in contact with the helium coolant used in HTGR, VHTR and GFR designs. In normal operation conditions, ultra-high purity helium will have chemically controlled impurities (water, oxygen, carbon dioxide, carbon monoxide, methane, hydrogen) that will create a slightly oxidizing gas environment. Little is known from direct experiments on the reactivity of third generation (nuclear grade) SiC/SiC composites in contact with low concentrations of water or oxygen in inert gas, at high temperature. However, there is ample information about the oxidation in dry and moist air of SiC/SiC composites at high temperatures. This information is reviewed first in the next chapters. The emphasis is places on the improvement in material oxidation, thermal, and mechanical properties during three stages of development of SiC fibers and at least two stages of development of the fiber/matrix interphase. The chemical stability of SiC/SiC composites in contact with oxygen or steam at temperatures that may develop in off-normal reactor conditions supports the conclusion that most advanced composites (also known as nuclear grade SiC/SiC composites) have the chemical resistance that would allow them maintain mechanical properties at temperatures up to 1200 1300 oC in the extreme conditions of an air or water ingress accident scenario. Further research is needed to assess the long-term stability of advanced SiC/SiC composites in inert gas (helium) in presence of very low concentrations (traces) of water and oxygen at the temperatures of normal operation of helium-cooled reactors. Another aspect that needs to be investigated is the effect of fast neutron irradiation on the oxidation stability of advanced SiC/SiC composites in normal operation conditions.

  11. Process-property relationships of SiC chemical vapor deposition in the Si/H/C/O system

    International Nuclear Information System (INIS)

    Richardson, C.; Takoudis, C.G.

    1999-01-01

    The thermal, chemical, and physical properties of SiC make it an attractive material for a wide range of applications from wear resistant coatings on tools to high temperature microelectronics operations. A comprehensive thermodynamic analysis has been performed for the Si/H/C/O system from which a priori process-property relationships of the chemical vapor deposition (CVD) of silicon carbide (SiC) are obtained. The parameter space for pure silicon carbide growth is reported for five orders of magnitude of the system water vapor level (1 ppb--100 ppm), four orders of magnitude of system pressure (0.1--760 Torr), and two orders of magnitude of C/Si feed ratio (0.25--20) and H 2 /Si feed ratio (50--10,000). Lower growth temperatures for pure SiC are predicted in clean systems with low system water vapor levels, at stoichiometric to near carbon excess conditions (C/Si ≅ 1 to C/Si > 1), at high carrier gas flow rates (large H 2 /Si feed ratios), and at low operating pressures. Because relative C/Si and H 2 /Si feed ratios have been considered, the predictions in this study are applicable to both multiple and single precursor systems. Further, these results are valid for the CVD of α-SiC as well as β-SiC. Experimental data reported on the growth of α-SiC and β-SiC are found to be in satisfactory agreement with the theoretical predictions, for numerous systems that include multiple and single source, silicon and carbon, species

  12. Electron paramagnetic resonance study on n-type electron-irradiated 3C-SiC

    Energy Technology Data Exchange (ETDEWEB)

    Carlsson, P; Rabia, K; Son, N T; Janzen, E [Department of Physics, Chemistry and Biology, Linkoeping University, SE-581 83 Linkoeping (Sweden); Ohshima, T; Morishita, N; Itoh, H [Japan Atomic Energy Research Institute, Takasaki 370-1292 (Japan); Isoya, J [University of Tsukuba, Tsukuba 305-8550 (Japan)], E-mail: paca@ifm.liu.se

    2008-03-15

    Electron Paramagnetic Resonance (EPR) was used to study defects in n-type 3C-SiC films irradiated by 3-MeV electrons at room temperature with a dose of 2x10{sup 18} cm{sup -2}. After electron irradiation, two new EPR spectra with an effective spin S = 1, labeled L5 and L6, were observed. The L5 center has C{sub 3v} symmetry with g = 2.004 and a fine-structure parameter D = 436.5x10{sup -4} cm{sup -1}. The L5 spectrum was only detected under light illumination and it could not be detected after annealing at {approx}550{sup 0}C. The principal z-axis of the D tensor is parallel to the <111>-directions, indicating the location of spins along the Si-C bonds. Judging from the symmetry and the fact that the signal was detected under illumination in n-type material, the L5 center may be related to the divacancy in the neutral charge state. The L6 center has a C{sub 2v}-symmetry with an isotropic g-value of g = 2.003 and the fine structure parameters D = 547.7x10{sup -4} cm{sup -1} and E = 56.2x10{sup -4} cm{sup -1}. The L6 center disappeared after annealing at a rather low temperature ({approx}200 deg. C), which is substantially lower than the known annealing temperatures for vacancy-related defects in 3C-SiC. This highly mobile defect may be related to carbon interstitials.

  13. Photoemission and low energy electron microscopy study on the formation and nitridation of indium droplets on Si (111)7 × 7 surfaces

    International Nuclear Information System (INIS)

    Qi, B.; Ólafsson, S.; Göthelid, M.; Gislason, H.P.; Agnarsson, B.

    2013-01-01

    The formation and nitridation of indium (In) droplets on Si (111)7 × 7, with regard to In droplet epitaxy growth of InN nanostructures, were studied using a spectroscopic photoemission and low energy electron microscopy, for the In coverages from 0.07 to 2.3 monolayer (ML). The results reveal that the In adatoms formed well-ordered clusters while keeping the Si (111)7 × 7 surface periodicity at 0.07 ML and a single √(3)×√(3) phase at 0.3 ML around 440–470 °C. At 0.82 ML, owing to the presence of structurally defect areas beside the 7 × 7 domains, 3-D In droplets evolved concomitantly with the formation of 4 × 1-In cluster chains, accompanied by a transition in surface electric property from semiconducting to metallic. Further increasing the In to 2.3 ML led to a moderate increase in number density and an appreciable lateral growth of the droplets, as well as the multi-domain In phases. Upon nitridation with NH 3 at ∼ 480 °C, besides the nitridation of the In droplets, the N radicals also dissociated the In-Si bonds to form Si-N. This caused a partial disintegration of the ordered In phase and removal of the In adatoms between the In droplets. - Highlights: ► Formation and nitridation of indium (In) droplets on Si (111) were studied. ► In droplets evolved with the 4 × 1-In cluster chains at 0.82 monolayer (ML). ► In droplets grow in density and lateral size with In coverage increased to 2.3 ML. ► The multi-domain In phases were formed at 2.3 ML. ► Nitridation of In droplets is accompanied by a disintegration of layering In phase

  14. Fiber/matrix interfacial thermal conductance effect on the thermal conductivity of SiC/SiC composites

    International Nuclear Information System (INIS)

    Nguyen, Ba Nghiep; Henager, Charles H.

    2013-01-01

    SiC/SiC composites used in fusion reactor applications are subjected to high heat fluxes and require knowledge and tailoring of their in-service thermal conductivity. Accurately predicting the thermal conductivity of SiC/SiC composites as a function of temperature will guide the design of these materials for their intended use, which will eventually include the effects of 14-MeV neutron irradiations. This paper applies an Eshelby–Mori–Tanaka approach (EMTA) to compute the thermal conductivity of unirradiated SiC/SiC composites. The homogenization procedure includes three steps. In the first step EMTA computes the homogenized thermal conductivity of the unidirectional (UD) SiC fiber embraced by its coating layer. The second step computes the thermal conductivity of the UD composite formed by the equivalent SiC fibers embedded in a SiC matrix, and finally the thermal conductivity of the as-formed SiC/SiC composite is obtained by averaging the solution for the UD composite over all possible fiber orientations using the second-order fiber orientation tensor. The EMTA predictions for the transverse thermal conductivity of several types of SiC/SiC composites with different fiber types and interfaces are compared to the predicted and experimental results by Youngblood et al. [J. Nucl. Mater. 307–311 (2002) 1120–1125, Fusion Sci. Technol. 45 (2004) 583–591, Compos. Sci. Technol. 62 (2002) 1127–1139.

  15. Tuning the electronic and magnetic properties of the Si nanoribbons through dangling bond

    International Nuclear Information System (INIS)

    Song Yuling; Zhang Yan; Zhang Jianmin; Lu Daobang; Xu Kewei

    2011-01-01

    Combined with three spin configurations, the effects of the dangling bonds on the electronic and magnetic properties of both zigzag edge and armchair edge Si nanoribbions (ZSiNR and ASiNR) have been investigated systematically by the first-principles calculations in the local spin-density function theory. The dangling bonds at one edge or both edges make ZSiNR to transform from ferromagnetic state of the perfect ZSiNR to antiferromagnetic state. However, the dangling bonds at one edge and both edges make ASiNR to transform from nonmagnetic semiconductor of the perfect ASiNR to ferromagnetic and antiferromagnetic metals, respectively. Furthermore, the magnetic moment of the ferromagnetic state increases for the perfect bare one edge and bare both edges successively for either ZSiNR or ASiNR. -- Research Highlights: →Dangling bonds at one or both edges transfer FM ZSiNR to AFM state. →Dangling bonds at one (both edges) transfer nonmagnetic ASiNR to FM (AFM) state. →Magnetic moment of FM SiNRs increases for perfect, bare one and both edges successively.

  16. Enhancing the oxidation resistance of graphite by applying an SiC coat with crack healing at an elevated temperature

    Energy Technology Data Exchange (ETDEWEB)

    Park, Jae-Won, E-mail: pjw@kaeri.re.kr [Korea Atomic Energy Research Institute, 1045 Daedeok-Daero, Yuseong-Gu, Daejeon-City (Korea, Republic of); Kim, Eung-Seon; Kim, Jae-Un [Korea Atomic Energy Research Institute, 1045 Daedeok-Daero, Yuseong-Gu, Daejeon-City (Korea, Republic of); Kim, Yootaek [Dept. of Materials Engineering, Kyonggi Universtiy, Suwon (Korea, Republic of); Windes, William E. [Idaho National Laboratory, Idaho Falls, ID 83415 (United States)

    2016-08-15

    Highlights: • Ion beam mixed SiC coating was performed on the graphite for the enhanced adhesion. • The SiC coated was cracked at the elevated temperature, confirming the strong bonding, and then was vigorously oxidized leaving only the SiC layer. • For crack healing, CVD crack healing increased by ∼4 times in 20% weight reduction in air at 900 °C as compared to PVD crack healing. - Abstract: The potential of reducing the oxidation of the supporting graphite components during normal and/or accident conditions in the Very High Temperature Reactor (VHTR) design has been studied. In this work efforts have been made to slow the oxidation process of the graphite with a thin SiC coating (∼ 10 μm). Upon heating at ≥ 1173 K in air, the spallations and cracks were formed in the dense columnar structured SiC coating layer grown on the graphite with a functionally gradient electron beam physical vapor deposition (EB-PVD. In accordance with the formations of these defects, the sample was vigorously oxidized, leaving only the SiC coating layer. Then, efforts were made to heal the surface defects using additional EB-PVD with ion beam bombardment and chemical vapor deposition (CVD). The EB-PVD did not effectively heal the cracks. But, the CVD was more appropriate for crack healing, likely due to its excellent crack line filling capability with a high density and high aspect ratio. It took ∼ 34 min for the 20% weight loss of the CVD crack healed sample in the oxidation test with annealing at 1173 K, while it took ∼ 8 min for the EB-PVD coated sample, which means it took ∼4 times longer at 1173 K for the same weight reduction in this experimental set-up.

  17. Enhancing the oxidation resistance of graphite by applying an SiC coat with crack healing at an elevated temperature

    International Nuclear Information System (INIS)

    Park, Jae-Won; Kim, Eung-Seon; Kim, Jae-Un; Kim, Yootaek; Windes, William E.

    2016-01-01

    Highlights: • Ion beam mixed SiC coating was performed on the graphite for the enhanced adhesion. • The SiC coated was cracked at the elevated temperature, confirming the strong bonding, and then was vigorously oxidized leaving only the SiC layer. • For crack healing, CVD crack healing increased by ∼4 times in 20% weight reduction in air at 900 °C as compared to PVD crack healing. - Abstract: The potential of reducing the oxidation of the supporting graphite components during normal and/or accident conditions in the Very High Temperature Reactor (VHTR) design has been studied. In this work efforts have been made to slow the oxidation process of the graphite with a thin SiC coating (∼ 10 μm). Upon heating at ≥ 1173 K in air, the spallations and cracks were formed in the dense columnar structured SiC coating layer grown on the graphite with a functionally gradient electron beam physical vapor deposition (EB-PVD. In accordance with the formations of these defects, the sample was vigorously oxidized, leaving only the SiC coating layer. Then, efforts were made to heal the surface defects using additional EB-PVD with ion beam bombardment and chemical vapor deposition (CVD). The EB-PVD did not effectively heal the cracks. But, the CVD was more appropriate for crack healing, likely due to its excellent crack line filling capability with a high density and high aspect ratio. It took ∼ 34 min for the 20% weight loss of the CVD crack healed sample in the oxidation test with annealing at 1173 K, while it took ∼ 8 min for the EB-PVD coated sample, which means it took ∼4 times longer at 1173 K for the same weight reduction in this experimental set-up.

  18. Protección contra la oxidación de materiales compuestos SiC(C/SiC mediante la combinación de recubrimientos de silicatos de itrio y sílice

    Directory of Open Access Journals (Sweden)

    Aparicio, M.

    2001-12-01

    Full Text Available The factor which currently precludes the use of carbon fibre reinforced silicon carbide (C/SiC in high temperature structural applications is the oxidation of carbon fibres at temperatures greater than 450ºC (1. For this reason, it is necessary to develop coatings capable of protecting C/SiC components from oxidation for extended periods at 1600ºC. Conventional coatings consist of multilayers of different materials with complementary antioxidant properties. The objective of this work was to develop a multilayer coating consisted by a bonding layer of SiC, a intermediate layer of yttrium silicates: Y2Si2O7 and Y2SiO5, and an external layer of SiO2. Different techniques have been used to prepare the layers: painting with policarbosilane solutions, slip-coating and sol-gel, respectively. The behaviour against oxidation of coated composite material has been evaluated, and the samples before and after oxidation has been characterised by SEM. The cracking of SiC coating leads to a very low oxidation resistance at low temperatures. Only when the substrate is protected by the trilayer coating the reduction of the oxidation rate is considerable, and the weight loss is reduced from 50% (with a SiC coating to 15%.

    El principal inconveniente para la utilización de los materiales compuestos C/SiC en aplicaciones estructurales de alta temperatura es la elevada velocidad de oxidación de la fibra de carbono por encima de 450°C (1. Por esta razón, es necesario el desarrollo de recubrimientos capaces de proteger de la oxidación a estos materiales durante periodos prolongados a temperaturas de hasta 1600°C. Habitualmente, los recubrimientos están formados por multicapas con características antioxidantes complementarias. El objetivo de este trabajo ha sido el desarrollo de un recubrimiento multicapa formado por una capa interior de SiC, una intermedia de silicatos de itrio: Y2Si2O7 y Y2SiO5, y una exterior de SiO2. En su procesamiento se han

  19. PIE of nuclear grade SiC/SiC flexural coupons irradiated to 10 dpa at LWR temperature

    Energy Technology Data Exchange (ETDEWEB)

    Koyanagi, Takaaki [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Katoh, Yutai [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

    2017-03-01

    Silicon carbide fiber-reinforced SiC matrix (SiC/SiC) composites are being actively investigated for accident-tolerant core structures of light water reactors (LWRs). Owing to the limited number of irradiation studies previously conducted at LWR-coolant temperature, this study examined SiC/SiC composites following neutron irradiation at 230–340°C to 2.0 and 11.8 dpa in the High Flux Isotope Reactor. The investigated materials are chemical vapor infiltrated (CVI) SiC/SiC composites with three different reinforcement fibers. The fiber materials were monolayer pyrolytic carbon (PyC)-coated Hi-NicalonTM Type-S (HNS), TyrannoTM SA3 (SA3), and SCS-UltraTM (SCS) SiC fibers. The irradiation resistance of these composites was investigated based on flexural behavior, dynamic Young’s modulus, swelling, and microstructures. There was no notable mechanical properties degradation of the irradiated HNS and SA3 SiC/SiC composites except for reduction of the Young’s moduli by up to 18%. The microstructural stability of these composites supported the absence of degradation. In addition, no progressive swelling from 2.0 to 11.8 dpa was confirmed for these composites. On the other hand, the SCS composite showed significant mechanical degradation associated with cracking within the fiber. This study determined that SiC/SiC composites with HNS or SA3 SiC/SiC fibers, a PyC interphase, and a CVI SiC matrix retain their properties beyond the lifetime dose for LWR fuel cladding at the relevant temperature.

  20. Carbon surface diffusion and SiC nanocluster self-ordering

    International Nuclear Information System (INIS)

    Pezoldt, J.; Trushin, Yu.V.; Kharlamov, V.S.; Schmidt, A.A.; Cimalla, V.; Ambacher, O.

    2006-01-01

    The process of the spatial ordering of SiC nanoclusters on the step edges on Si surfaces was studied by means of multi-scale computer simulation. The evolution of cluster arrays on an ideal flat surface and surfaces with terraces of various widths was performed by kinetic Monte Carlo (KMC) simulations based on quantitative studies of potential energy surfaces (PES) by molecular dynamics (MD). PES analysis revealed that certain types of steps act as strong trapping centres for both Si and C adatoms stimulating clusters nucleation. Spatial ordering of the SiC nanoclusters at the terrace edges can be achieved if the parameters of the growth process (substrate temperature, carbon flux) and substrate (steps direction and terrace widths) are adjusted to the surface morphology. Temperature ranges for growth regimes with and without formation of cluster chains were determined. Cluster size distributions and the dependence of optimal terrace width for self ordering on the deposition parameters were obtained

  1. Effect of CHF3 Plasma Treatment on the Characteristics of SiCOH Low-k Film

    International Nuclear Information System (INIS)

    Xing Zhenyu; Ye Chao; Yuan Jing; Xu Yijun; Ning Zhaoyuan

    2009-01-01

    The characteristics of SiCOH low dielectric constant film treated by a trifluromethane (CHF 3 ) electron cyclotron resonance (ECR) plasma was investigated. The flat-band voltage V FB and leakage current of the Cu/SiCOH/Si structure, and the hydrophobic property of the SiCOH film were obtained by the measurements of capacitance-voltage, current-voltage and water contact angle. The structures of the SiCOH film were also analyzed by Fourier transform infrared spectroscopy and atomic force microscopy. The CHF 3 plasma treatment of the SiCOH film led to a reduction in both the flat-band voltage V FB shift and leakage current of the Cu/SiCOH/Si structure, a decrease in surface roughness, and a deterioration of the hydrophobic property. The changes in the film's characteristics were related to the formation of Si-F bond, the increase in Si-OH bond, and the C:F deposition at the surface of the SiCOH film.

  2. New evaluation method of crack growth in SiC/SiC composites using interface elements

    International Nuclear Information System (INIS)

    Serizawa, H.; Ando, M.; Lewinsohn, C.A.; Murakawa, H.

    2000-01-01

    Crack propagation behavior in SiC/SiC composites was analyzed using a new computer simulation method that included time-dependent interface elements. The simulation method was used to describe the time-dependent crack growth in SiC/SiC composites under four-point bending of single-edge-notched beam bend-bars. Two methods were used to simulate time-dependent crack growth in SiC/SiC composites due to fiber creep. In one method, the creep property was introduced into the interface elements by the general method of finite element method (FEM) analysis. In the second method, a new technique making the best use of the potential function was used to represent crack closure tractions due to creeping fibers. The stage-II slow crack growth of a general creep deformation was simulated by both methods. Additionally, stage-III crack growth and the transition from stage-II to stage-III could be simulated by the new method. The new method has the potential to completely simulate time-dependent crack growth behavior in SiC/SiC composites due to fiber creep

  3. Theoretical investigation on structural stability of InN thin films on 3C-SiC(0 0 1)

    International Nuclear Information System (INIS)

    Ito, Takumi; Akiyama, Toru; Nakamura, Kohji; Ito, Tomonori

    2008-01-01

    The structural stability of InN thin films on 3C-SiC(0 0 1) substrate is systematically investigated based on an empirical interatomic potential, which incorporates electrostatic energy due to covalent bond charges and ionic charges. The calculated energy differences among coherently grown 3C-InN(0 0 1), 3C-InN(0 0 1) with misfit dislocations (MDs), and 2H-InN(0 0 0 1) imply that the coherently grown 3C-InN(0 0 1) is stable when the film thickness is less than 7 monolayers (MLs) while 2H-InN(0 0 0 1) is stabilized for the thickness beyond 8 MLs. This is because InN layers in 2H-InN(0 0 0 1) are fully relaxed by one MD. The analysis of atomic configuration at the 3C-InN(0 0 1)/3C-SiC(0 0 1) interfaces reveals that the coordination number of interfacial atoms is quite different from that in the bulk region. Thus, 3C-InN(0 0 1) with MDs on 3C-SiC(0 0 1) is always metastable over entire range of film thickness, consistent with the successful fabrication of 2H-InN(0 0 0 1) on 3C-SiC(0 0 1) by the molecular beam epitaxy. These results suggest that the mismatch in atomic arrangements at the interface crucially affects the structural stability of InN thin films on 3C-SiC(0 0 1) substrate

  4. Synthesis and characterization of laminated Si/SiC composites

    Science.gov (United States)

    Naga, Salma M.; Kenawy, Sayed H.; Awaad, Mohamed; Abd El-Wahab, Hamada S.; Greil, Peter; Abadir, Magdi F.

    2012-01-01

    Laminated Si/SiC ceramics were synthesized from porous preforms of biogenous carbon impregnated with Si slurry at a temperature of 1500 °C for 2 h. Due to the capillarity infiltration with Si, both intrinsic micro- and macrostructure in the carbon preform were retained within the final ceramics. The SEM micrographs indicate that the final material exhibits a distinguished laminar structure with successive Si/SiC layers. The produced composites show weight gain of ≈5% after heat treatment in air at 1300 °C for 50 h. The produced bodies could be used as high temperature gas filters as indicated from the permeability results. PMID:25685404

  5. Synthesis and characterization of laminated Si/SiC composites

    Directory of Open Access Journals (Sweden)

    Salma M. Naga

    2013-01-01

    Full Text Available Laminated Si/SiC ceramics were synthesized from porous preforms of biogenous carbon impregnated with Si slurry at a temperature of 1500 °C for 2 h. Due to the capillarity infiltration with Si, both intrinsic micro- and macrostructure in the carbon preform were retained within the final ceramics. The SEM micrographs indicate that the final material exhibits a distinguished laminar structure with successive Si/SiC layers. The produced composites show weight gain of ≈5% after heat treatment in air at 1300 °C for 50 h. The produced bodies could be used as high temperature gas filters as indicated from the permeability results.

  6. SiC/SiC composites by preceramic polymer infiltration and pyrolysis

    International Nuclear Information System (INIS)

    Schiroky, G.H.

    1997-01-01

    Lanxide Corporation has been developing fiber-reinforced silicon carbide matrix composites using the technique of preceramic polymer infiltration and pyrolysis, commonly referred to as the PIP-process. In this method, liquid CERASET TM preceramic polymer is being infiltrated into lay-ups of ceramic fibers, thermoset, and pyrolized at elevated temperatures for conversion into a SiC matrix. Several cycles of reinfiltration and pyrolysis must be performed to build up the SiC matrix because of the increase in density during pyrolysis from 1.0 g/cm 3 for the liquid polymer to between 2.2 and 3.2 g/cm 3 for the ceramic matrix. Composites have been fabricated using three different approaches: first, polymer infiltration of free-standing fiber preforms in which the fiber plies are being held together with a C/SiC duplex coating applied by chemical vapor infiltration; second, infiltration of individually coated fiber plies contained in a mold using the resin transfer molding method; and third, infiltration of vacuum-bagged, individually coated fiber plies using the vacuum assisted resin infiltration technique. Very good mechanical properties of Nicalon TM /SiC and Hi-Nicalon TM /SiC composites have been obtained, with four-point flexural strengths exceeding 400 MPa and toughnesses in the 20 to 30 MPa·m 1/2 range. The thermal conductivity of the fabricated composites is low (below 5 W/m·K) and must be improved substantially to meet the requirements for fusion structural applications. The fabricated components are relatively dense and impermeable to nitrogen, however, are readily permeated by helium. Chemical analysis has indicated the presence of a small amount of nitrogen (ca. 1 wt%) in the SiC material after pyrolysis of the CERASET preceramic polymer at 1600degC. (author)

  7. SiC/SiC composites by preceramic polymer infiltration and pyrolysis

    Energy Technology Data Exchange (ETDEWEB)

    Schiroky, G.H. [Lanxide Corporation, Newark, DE (United States)

    1997-12-31

    Lanxide Corporation has been developing fiber-reinforced silicon carbide matrix composites using the technique of preceramic polymer infiltration and pyrolysis, commonly referred to as the PIP-process. In this method, liquid CERASET{sup TM} preceramic polymer is being infiltrated into lay-ups of ceramic fibers, thermoset, and pyrolized at elevated temperatures for conversion into a SiC matrix. Several cycles of reinfiltration and pyrolysis must be performed to build up the SiC matrix because of the increase in density during pyrolysis from 1.0 g/cm{sup 3} for the liquid polymer to between 2.2 and 3.2 g/cm{sup 3} for the ceramic matrix. Composites have been fabricated using three different approaches: first, polymer infiltration of free-standing fiber preforms in which the fiber plies are being held together with a C/SiC duplex coating applied by chemical vapor infiltration; second, infiltration of individually coated fiber plies contained in a mold using the resin transfer molding method; and third, infiltration of vacuum-bagged, individually coated fiber plies using the vacuum assisted resin infiltration technique. Very good mechanical properties of Nicalon{sup TM}/SiC and Hi-Nicalon{sup TM}/SiC composites have been obtained, with four-point flexural strengths exceeding 400 MPa and toughnesses in the 20 to 30 MPa{center_dot}m{sup 1/2} range. The thermal conductivity of the fabricated composites is low (below 5 W/m{center_dot}K) and must be improved substantially to meet the requirements for fusion structural applications. The fabricated components are relatively dense and impermeable to nitrogen, however, are readily permeated by helium. Chemical analysis has indicated the presence of a small amount of nitrogen (ca. 1 wt%) in the SiC material after pyrolysis of the CERASET preceramic polymer at 1600degC. (author)

  8. [Effect of TiO2-SiO2-SnOx film with different firing temperatures on bond strength of low-fusing dental porcelain to pure titanium].

    Science.gov (United States)

    Zhang, Zichuan; Zhang, Pei

    2015-07-01

    To evaluate the influence of TiO(2)-SiO(2)-SnOx nano-coatings with different firing temperatures on the bond strength of low-fusing dental porcelain to pure titanium. The surface of pure titanium was coated uniformly with TiO(2)-SiO(2)-SnOx nano-coatings by solution-gelatin (Sol-Gel) technology and then fired at 300 °C (group A) or 750 °C (group B) for 1 h. The specimens without any coatings were the control group (group C). There were 10 specimens in each group. Dental porcelain was sintered on the surface of titanium specimens. Surface roughness and contact angle of the coatings were also detected. The titanium-porcelain bond strength was investigated according to YY 0621-2008 standards using three-point flexure bond test. The phase composition of the TiO(2)-SiO(2)-SnOx nano-coatings was characterized by X-ray diffraction(XRD). The interface of titanium-porcelain and TiO(2)-SiO(2)-SnOx nano-coatings were observed using scanning electron microscope (SEM). No rutile phase was found in these specimens of group A and group B. The surface roughness of group A, B, C was (0.97 ± 0.06), (0.99 ± 0.03), (0.96 ± 0.07) µm, respectively. No significant difference was found among the three groups. Compared with that of group C (64.37° ± 3.01°), contact angles detected in group A (52.04° ± 3.15°) and group B (85.27° ± 4.17°) were significantly different (P porcelain in group A [(35.66 ± 2.65) MPa] was significantly increased compared with those in group B [(26.18 ± 2.22) MPa] and group C [(31.66 ± 3.52) MPa]. SEM photomicrographs of titanium-porcelain interface morphology of the specimens before porcelain sintering showed that TiO(2)-SiO(2)-SnOx nano-coatings in group A were compact and homogeneous with petty cracks and those in group B was loose and arranged disorderly. TiO(2)-SiO(2)-SnOx nano-coating fired at 300 °C is significantly effective in improving the titanium-porcelain bond strength.

  9. Technique development for modulus, microcracking, hermeticity, and coating evaluation capability characterization of SiC/SiC tubes

    Energy Technology Data Exchange (ETDEWEB)

    Hu, Xunxiang [Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States); Ang, Caen K. [Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States); Singh, Gyanender P. [Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States); Katoh, Yutai [Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

    2016-08-01

    Driven by the need to enlarge the safety margins of nuclear fission reactors in accident scenarios, research and development of accident-tolerant fuel has become an important topic in the nuclear engineering and materials community. A continuous-fiber SiC/SiC composite is under consideration as a replacement for traditional zirconium alloy cladding owing to its high-temperature stability, chemical inertness, and exceptional irradiation resistance. An important task is the development of characterization techniques for SiC/SiC cladding, since traditional work using rectangular bars or disks cannot directly provide useful information on the properties of SiC/SiC composite tubes for fuel cladding applications. At Oak Ridge National Laboratory, experimental capabilities are under development to characterize the modulus, microcracking, and hermeticity of as-fabricated, as-irradiated SiC/SiC composite tubes. Resonant ultrasound spectroscopy has been validated as a promising technique to evaluate the elastic properties of SiC/SiC composite tubes and microcracking within the material. A similar technique, impulse excitation, is efficient in determining the basic mechanical properties of SiC bars prepared by chemical vapor deposition; it also has potential for application in studying the mechanical properties of SiC/SiC composite tubes. Complete evaluation of the quality of the developed coatings, a major mitigation strategy against gas permeation and hydrothermal corrosion, requires the deployment of various experimental techniques, such as scratch indentation, tensile pulling-off tests, and scanning electron microscopy. In addition, a comprehensive permeation test station is being established to assess the hermeticity of SiC/SiC composite tubes and to determine the H/D/He permeability of SiC/SiC composites. This report summarizes the current status of the development of these experimental capabilities.

  10. Fabrication and surface passivation of porous 6H-SiC by atomic layer deposited films

    DEFF Research Database (Denmark)

    Lu, Weifang; Ou, Yiyu; Petersen, Paul Michael

    2016-01-01

    Porous 6H-SiC samples with different thicknesses were fabricated through anodic etching in diluted hydrofluoric acid. Scanning electron microscope images show that the dendritic pore formation in 6HSiC is anisotropic, which has different lateral and vertical formation rates. Strong photoluminesce...... above the 6H-SiC crystal band gap, which suggests that the strong photoluminescence is ascribed to surface state produced during the anodic etching....

  11. Joining technology—A challenge for the use of SiC components in HTRs

    Energy Technology Data Exchange (ETDEWEB)

    Herrmann, M., E-mail: marion.herrmann@tu-dresden.de; Meisel, P.; Lippmann, W.; Hurtado, A.

    2016-09-15

    The availability of suitable joining technologies is paramount to the further advancement of ceramic components and their use in HTRs. Among other joining technologies, a modified brazing technology using a laser beam for heating the components to be joined has been developed at TU Dresden. The laser-induced heating behavior of the ceramic material is determined by the interactions between the material and the laser beam. This was shown in two different silicon carbide materials (SSiC and SiC{sub f}-reinforced ceramic material) using a diode laser with wavelengths 808 nm and 940 nm. The laser-based technique was illustrated by three different examples: sealing of monolithic SiC with a pin configuration for fuel claddings, sealing of SiC heat pipes with a length of 1 m, and demonstration of the transferability of the laser technique to fiber-reinforced components by means of a SiC{sub f}/SiCN material. Because the covalent bonding of SiC does not allow conventional welding, much research has been devoted to developing alternative filler systems. Glass or glass–ceramic fillers enable the tailoring of properties such as CTE and viscosity. Glasses are thermally stable up to their glass transition temperatures. It was shown that the crystallization of the yttrium aluminosilicate glass composition of the present work allows it to be used at 1050 °C without any significant changes occurring in braze tightness. For the SiC heat pipes with sodium as the working fluid, a sodium-resistant metal braze consisting of Ni–Ti–Si was formed. The long-term resistance of this filler to sodium at 800 °C was proven. The results demonstrate the possibility of using the laser-based joining technique for the joining of different SiC materials as well as for different brazing materials.

  12. Actinide-carbon bonds: insertion reactions of carbon monoxide, tert-butyl isocyanide, and tert-butyl cyanide into [(Me3Si)2N]2MCH2Si(Me)2NSiMe3

    International Nuclear Information System (INIS)

    Simpson, S.J.; Andersen, R.A.

    1981-01-01

    The thorium or uranium metallacycles [(Me 2 Si) 2 N] 2 MCH 2 Si(Me) 2 NSiMe 3 (I) react with tert-butyl cyanide to give the six-membered ring compounds [(Me 3 Si) 2 N] 2 MN = C(t-Bu)CH 2 Si(Me) 2 NSiMe 3 . The metallacycles (I) also react with the isoelectronic molecules tert-butyl isocyanide and carbon monoxide to give the unique five-membered ring compounds with exocyclic carbon-carbon double bonds, [(Me 3 Si) 2 N] 2 MXC(=CH 2 )Si(Me) 2 NSiMe 3 , where X is t-BuN or oxygen. The four-membered ring metallacycles (I) give simple coordination complexes of the type [(Me 3 Si) 2 N] 2 MCH 2 Si-(Me) 2 NSiMe 3 (N 3 SiMe 3 ) with trimethylsilyl azide

  13. Acetic Acid Can Catalyze Succinimide Formation from Aspartic Acid Residues by a Concerted Bond Reorganization Mechanism: A Computational Study

    Directory of Open Access Journals (Sweden)

    Ohgi Takahashi

    2015-01-01

    Full Text Available Succinimide formation from aspartic acid (Asp residues is a concern in the formulation of protein drugs. Based on density functional theory calculations using Ace-Asp-Nme (Ace = acetyl, Nme = NHMe as a model compound, we propose the possibility that acetic acid (AA, which is often used in protein drug formulation for mildly acidic buffer solutions, catalyzes the succinimide formation from Asp residues by acting as a proton-transfer mediator. The proposed mechanism comprises two steps: cyclization (intramolecular addition to form a gem-diol tetrahedral intermediate and dehydration of the intermediate. Both steps are catalyzed by an AA molecule, and the first step was predicted to be rate-determining. The cyclization results from a bond formation between the amide nitrogen on the C-terminal side and the side-chain carboxyl carbon, which is part of an extensive bond reorganization (formation and breaking of single bonds and the interchange of single and double bonds occurring concertedly in a cyclic structure formed by the amide NH bond, the AA molecule and the side-chain C=O group and involving a double proton transfer. The second step also involves an AA-mediated bond reorganization. Carboxylic acids other than AA are also expected to catalyze the succinimide formation by a similar mechanism.

  14. Acetic acid can catalyze succinimide formation from aspartic acid residues by a concerted bond reorganization mechanism: a computational study.

    Science.gov (United States)

    Takahashi, Ohgi; Kirikoshi, Ryota; Manabe, Noriyoshi

    2015-01-12

    Succinimide formation from aspartic acid (Asp) residues is a concern in the formulation of protein drugs. Based on density functional theory calculations using Ace-Asp-Nme (Ace = acetyl, Nme = NHMe) as a model compound, we propose the possibility that acetic acid (AA), which is often used in protein drug formulation for mildly acidic buffer solutions, catalyzes the succinimide formation from Asp residues by acting as a proton-transfer mediator. The proposed mechanism comprises two steps: cyclization (intramolecular addition) to form a gem-diol tetrahedral intermediate and dehydration of the intermediate. Both steps are catalyzed by an AA molecule, and the first step was predicted to be rate-determining. The cyclization results from a bond formation between the amide nitrogen on the C-terminal side and the side-chain carboxyl carbon, which is part of an extensive bond reorganization (formation and breaking of single bonds and the interchange of single and double bonds) occurring concertedly in a cyclic structure formed by the amide NH bond, the AA molecule and the side-chain C=O group and involving a double proton transfer. The second step also involves an AA-mediated bond reorganization. Carboxylic acids other than AA are also expected to catalyze the succinimide formation by a similar mechanism.

  15. Photosynthetic water oxidation: binding and activation of substrate waters for O-O bond formation.

    Science.gov (United States)

    Vinyard, David J; Khan, Sahr; Brudvig, Gary W

    2015-01-01

    Photosynthetic water oxidation occurs at the oxygen-evolving complex (OEC) of Photosystem II (PSII). The OEC, which contains a Mn4CaO5 inorganic cluster ligated by oxides, waters and amino-acid residues, cycles through five redox intermediates known as S(i) states (i = 0-4). The electronic and structural properties of the transient S4 intermediate that forms the O-O bond are not well understood. In order to gain insight into how water is activated for O-O bond formation in the S4 intermediate, we have performed a detailed analysis of S-state dependent substrate water binding kinetics taking into consideration data from Mn coordination complexes. This analysis supports a model in which the substrate waters are both bound as terminal ligands and react via a water-nucleophile attack mechanism.

  16. CVD growth of (001) and (111)3C-SiC epilayers and their interface reactivity with praseodymium oxide dielectric layers

    International Nuclear Information System (INIS)

    Sohal, R.

    2006-01-01

    In this work, growth and characterisation of 3C-SiC thin films, investigation of oxidation of thus prepared layers and Pr-silicate and AlON based interface with SiC have been studied. Chemical vapor deposition of 3C-SiC thin films on Si(001) and Si(111) substrates has been investigated. Prior to the actual SiC growth, preparation of initial buffer layers of SiC was done. Using such a buffer layer, epitaxial growth of 3C-SiC has been achieved on Si(111) and Si(001) substrates. The temperature of 1100 C and 1150 C has been determined to be the optimal temperature for 3C-SiC growth on Si (111) and Si(001) substrates respectively. The oxidation studies on SiC revealed that a slow oxidation process at moderate temperatures in steps was useful in reducing and suppressing the g-C at the SiO 2 /SiC interface. Clean, graphite-free SiO 2 has been successfully grown on 3C-SiC by silicon evaporation and UHV anneal. For the application of high-k Pr 2 O 3 on silicon carbide, plausible interlayer, Pr-Silicate and AlON, have been investigated. Praseodymium silicate has been prepared successfully completely consuming the SiO2 and simultaneously suppressing the graphitic carbon formation. A comparatively more stable interlayer using AlON has been achieved. This interlayer mainly consists of stable phases of AlN along with some amount of Pr-aluminates and CN. Such layers act as a reaction barrier between Pr 2 O 3 and SiC, and simultaneously provide higher band offsets. (orig.)

  17. CVD growth of (001) and (111)3C-SiC epilayers and their interface reactivity with pradeodymium oxide dielectric layers

    Energy Technology Data Exchange (ETDEWEB)

    Sohal, R.

    2006-07-24

    In this work, growth and characterisation of 3C-SiC thin films, investigation of oxidation of thus prepared layers and Pr-silicate and AlON based interface with SiC have been studied. Chemical vapor deposition of 3C-SiC thin films on Si(001) and Si(111) substrates has been investigated. Prior to the actual SiC growth, preparation of initial buffer layers of SiC was done. Using such a buffer layer, epitaxial growth of 3C-SiC has been achieved on Si(111) and Si(001) substrates. The temperature of 1100 C and 1150 C has been determined to be the optimal temperature for 3C-SiC growth on Si (111) and Si(001) substrates respectively. The oxidation studies on SiC revealed that a slow oxidation process at moderate temperatures in steps was useful in reducing and suppressing the g-C at the SiO{sub 2}/SiC interface. Clean, graphite-free SiO{sub 2} has been successfully grown on 3C-SiC by silicon evaporation and UHV anneal. For the application of high-k Pr{sub 2}O{sub 3} on silicon carbide, plausible interlayer, Pr-Silicate and AlON, have been investigated. Praseodymium silicate has been prepared successfully completely consuming the SiO2 and simultaneously suppressing the graphitic carbon formation. A comparatively more stable interlayer using AlON has been achieved. This interlayer mainly consists of stable phases of AlN along with some amount of Pr-aluminates and CN. Such layers act as a reaction barrier between Pr{sub 2}O{sub 3} and SiC, and simultaneously provide higher band offsets. (orig.)

  18. Comparative study of SiC- and Si-based photovoltaic inverters

    Science.gov (United States)

    Ando, Yuji; Oku, Takeo; Yasuda, Masashi; Shirahata, Yasuhiro; Ushijima, Kazufumi; Murozono, Mikio

    2017-01-01

    This article reports comparative study of 150-300 W class photovoltaic inverters (Si inverter, SiC inverter 1, and SiC inverter 2). In these sub-kW class inverters, the ON-resistance was considered to have little influence on the efficiency. The developed SiC inverters, however, have exhibited an approximately 3% higher direct current (DC)-alternating current (AC) conversion efficiency as compared to the Si inverter. Power loss analysis indicated a reduction in the switching and reverse recovery losses of SiC metal-oxide-semiconductor field-effect transistors used for the DC-AC converter is responsible for this improvement. In the SiC inverter 2, an increase of the switching frequency up to 100 kHz achieved a state-of-the-art combination of the weight (1.25 kg) and the volume (1260 cm3) as a 150-250 W class inverter. Even though the increased switching frequency should cause the increase of the switching losses, the SiC inverter 2 exhibited an efficiency comparable to the SiC inverter 1 with a switching frequency of 20 kHz. The power loss analysis also indicated a decreased loss of the DC-DC converter built with SiC Schottky barrier diodes led to the high efficiency for its increased switching frequency. These results clearly indicated feasibility of SiC devices even for sub-kW photovoltaic inverters, which will be available for the applications where compactness and efficiency are of tremendous importance.

  19. Effect of re-melting on particle distribution and interface formation in SiC reinforced 2124Al matrix composite

    Energy Technology Data Exchange (ETDEWEB)

    Mandal, Durbadal, E-mail: durbadal73@yahoo.co.in [MEF Division, CSIR-National Metallurgical Laboratory, Jamshedpur 831007 (India); Viswanathan, Srinath [Dept of Metallurgical and Materials Engineering, University of Alabama, Tuscaloosa, AL (United States)

    2013-12-15

    The interface between metal matrix and ceramic reinforcement particles plays an important role in improving properties of the metal matrix composites. Hence, it is important to find out the interface structure of composite after re-melting. In the present investigation, the 2124Al matrix with 10 wt.% SiC particle reinforced composite was re-melted at 800 °C and 900 °C for 10 min followed by pouring into a permanent mould. The microstructures reveal that the SiC particles are distributed throughout the Al-matrix. The volume fraction of SiC particles varies from top to bottom of the composite plate and the difference increases with the decrease of re-melting temperature. The interfacial structure of re-melted 2124Al–10 wt.%SiC composite was investigated using scanning electron microscopy, an electron probe micro-analyzer, a scanning transmission electron detector fitted with scanning electron microscopy and an X-ray energy dispersive spectrometer. It is found that a thick layer of reaction product is formed at the interface of composite after re-melting. The experimental results show that the reaction products at the interface are associated with high concentration of Cu, Mg, Si and C. At re-melting temperature, liquid Al reacts with SiC to form Al{sub 4}C{sub 3} and Al–Si eutectic phase or elemental Si at the interface. High concentration of Si at the interface indicates that SiC is dissociated during re-melting. The X-ray energy dispersive spectrometer analyses confirm that Mg- and Cu-enrich phases are formed at the interface region. The Mg is segregated at the interface region and formed MgAl{sub 2}O{sub 4} in the presence of oxygen. The several elements identified at the interface region indicate that different types of interfaces are formed in between Al matrix and SiC particles. The Al–Si eutectic phase is formed around SiC particles during re-melting which restricts the SiC dissolution. - Highlights: • Re-melted composite shows homogeneous particle

  20. Structure of MnSi on SiC(0001)

    Science.gov (United States)

    Meynell, S. A.; Spitzig, A.; Edwards, B.; Robertson, M. D.; Kalliecharan, D.; Kreplak, L.; Monchesky, T. L.

    2016-11-01

    We report on the growth and magnetoresistance of MnSi films grown on SiC(0001) by molecular beam epitaxy. The growth resulted in a textured MnSi(111) film with a predominantly [1 1 ¯0 ] MnSi (111 )∥[11 2 ¯0 ] SiC(0001) epitaxial relationship, as demonstrated by transmission electron microscopy, reflection high energy electron diffraction, and atomic force microscopy. The 500 ∘C temperature required to crystallize the film leads to a dewetting of the MnSi layer. Although the sign of the lattice mismatch suggested the films would be under compressive stress, the films acquire an in-plane tensile strain likely driven by the difference in thermal expansion coefficients between the film and substrate during annealing. As a result, the magnetoresistive response demonstrates that the films possess a hard-axis out-of-plane magnetocrystalline anisotropy.

  1. DNA degradation by bleomycin: evidence for 2'R-proton abstraction and for C-O bond cleavage accompanying base propenal formation

    International Nuclear Information System (INIS)

    Ajmera, S.; Wu, J.C.; Worth, L. Jr.; Rabow, L.E.; Stubbe, J.; Kozarich, J.W.

    1986-01-01

    Reaction of poly(dA-[2'S- 3 H]dU) with activated bleomycin yields [ 3 H] uracil propenal that completely retains the tritium label. In contrast, the authors have previously shown that reaction of poly(dA-[2'R- 3 H]dU) with activated bleomycin affords unlabeled uracil propenal. They have also prepared both cis- and trans-thymine propenals by chemical synthesis and have observed that the trans isomer is the exclusive product of the bleomycin reaction. Moreover, the cis isomer was found to be stable to the conditions of bleomycin-induced DNA degradation. Taken together, these results establish that the formation of trans-uracil propenal occurs via an anti-elimination mechanism with the stereospecific abstraction of the 2R proton. The question of phosphodiester bond cleavage during base propenal formation has also been addressed by the analysis of the fate of oxygen-18 in poly(dA-[3'- 18 O]dT) upon reaction with activated bleomycin. The 5'-monophosphate oligonucleotide ends produced from thymine propenal formation have been converted to inorganic phosphate by the action of alkaline phosphatase, and the phosphate has been analyzed for 18 O content by 31 P NMR spectroscopy. The oxygen-18 is retained in the inorganic phosphate, establishing that the formation of thymine propenal by activated bleomycin proceeds with C-O bond cleavage at the 3-position

  2. Ring-opening of cyclic ethers with carbon–carbon bond formation by Grignard reagents

    DEFF Research Database (Denmark)

    Christensen, Stig Holden; Holm, Torkil; Madsen, Robert

    2014-01-01

    The ring-opening of cyclic ethers with concomitant C–C bond formation was studied with a number of Grignard reagents. The transformation was performed in a sealed vial by heating to ∼160 °C in an aluminum block or at 180 °C in a microwave oven. Good yields of the product alcohols were obtained...

  3. Forging C-C Bonds Through Decarbonylation of Aryl Ketones.

    Science.gov (United States)

    Somerville, Rosie J; Martin, Ruben

    2017-06-06

    The ability of nickel to cleave strong σ-bonds is again in the spotlight after a recent report that demonstrates the feasibility of using nickel complexes to promote decarbonylation of diaryl ketones. This transformation involves the cleavage of two strong C-C(O) bonds and avoids the use of noble metals, hence reinforcing the potential of decarbonylation as a technique for forging C-C bonds. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  4. Fusion bonding of Si wafers investigated by x ray diffraction

    DEFF Research Database (Denmark)

    Weichel, Steen; Grey, Francois; Rasmussen, Kurt

    2000-01-01

    The interface structure of bonded Si(001) wafers with twist angle 6.5 degrees is studied as a function of annealing temperature. An ordered structure is observed in x-ray diffraction by monitoring a satellite reflection due to the periodic modulation near the interface, which results from...

  5. Thermodynamic and kinetic properties of intrinsic defects and Mg transmutants in 3C–SiC determined by density functional theory

    International Nuclear Information System (INIS)

    Hu, Shenyang; Setyawan, Wahyu; Van Ginhoven, Renee M.; Jiang, Weilin; Henager, Charles H.; Kurtz, Richard J.

    2014-01-01

    Density functional theory (DFT) is used to calculate the thermodynamic and kinetic properties of transmutant Mg in 3C–SiC due to high-energy neutron irradiation associated with the fusion nuclear environment. The formation and binding energies of intrinsic defects, Mg-related defects, and clusters in 3C–SiC are systematically calculated. The minimum energy paths and activation energies during point defect migration and small cluster evolution are studied using a generalized solid-state nudged elastic band (G-SSNEB) method with DFT energy calculations. Stable defect structures and possible defect migration mechanisms are identified. The evolution of binding energies during Mg 2 Si formation demonstrates that the formation of Mg 2 Si needs to overcome a critical nucleus size and nucleation barrier. It is found that C vacancies promote the formation of the Mg 2 Si nucleus, and formation of which results in a compressive stress field around the nucleus. These data are important inputs in meso- and macro-scale modeling and experiments to understand and predict the impact of Mg on phase stability, microstructure evolution, and performance of SiC and SiC-based materials during long-term neutron exposures

  6. Analysis of Disulfide Bond Formation

    NARCIS (Netherlands)

    Braakman, Ineke; Lamriben, Lydia; van Zadelhoff, Guus; Hebert, Daniel N.

    2017-01-01

    In this unit, protocols are provided for detection of disulfide bond formation in cultures of intact cells and in an in vitro translation system containing isolated microsomes or semi-permeabilized cells. First, the newly synthesized protein of interest is biosynthetically labeled with radioactive

  7. Silicate formation at the interface of Pr-oxide as a high-K dielectric and Si(001) surfaces

    International Nuclear Information System (INIS)

    Schmeisser, D.; Zheng, F.; Perez-Dieste, V.; Himpsel, F.J.; LoNigro, R.; Toro, R.G.; Malandrino, G.; Fragala, I.L.

    2006-01-01

    The composition and chemical bonding of the first atoms across the interface between Si(001) and the dielectric determine the quality of dielectric gate stacks. An analysis of that hidden interface is a challenge as it requires both, high sensitivity and elemental and chemical state information. We used X-ray absorption spectroscopy in total electron yield and total fluorescence yield at the Si2p and the O1s edges to address that issue. We report on results of Pr 2 O 3 /Si(001) as prepared by both, epitaxial growth and metal organic chemical vapor deposition (MOCVD), and compare to the SiO 2 /Si(001) system as a reference. We find evidence for the silicate formation at the interface as derived from the characteristic features at the Si2p and the O1s edges. The results are in line with model experiments in which films of increasing film thickness are deposited in situ on bare Si(001) surfaces

  8. Activation of the Hg-C Bond of Methylmercury by [S2]-Donor Ligands.

    Science.gov (United States)

    Karri, Ramesh; Banerjee, Mainak; Chalana, Ashish; Jha, Kunal Kumar; Roy, Gouriprasanna

    2017-10-16

    Here we report that [S 2 ]-donor ligands Bmm OH , Bmm Me , and Bme Me bind rapidly and reversibly to the mercury centers of organomercurials, RHgX, and facilitate the cleavage of Hg-C bonds of RHgX to produce stable tetracoordinated Hg(II) complexes and R 2 Hg. Significantly, the rate of cleavage of Hg-C bonds depends critically on the X group of RHgX (X = BF 4 - , Cl - , I - ) and the [S 2 ]-donor ligands used to induce the Hg-C bonds. For instance, the initial rate of cleavage of the Hg-C bond of MeHgI induced by Bme Me is almost 2-fold higher than the initial rate obtained by Bmm OH or Bmm Me , indicating that the spacer between the two imidazole rings of [S 2 ]-donor ligands plays a significant role here in the cleavage of Hg-C bonds. Surprisingly, we noticed that the initial rate of cleavage of the Hg-C bond of MeHgI induced by Bme Me (or Bmm Me ) is almost 10-fold and 100-fold faster than the cleavage of Hg-C bonds of MeHgCl and [MeHg]BF 4 respectively, under identical reaction conditions, suggesting that the Hg-C bond of [MeHg]BF 4 is highly inert at room temperature (21 °C). We also show here that the nature of the final stable cleaved products, i.e. Hg(II) complexes, depends on the X group of RHgX and the [S 2 ]-donor ligands. For instance, the reaction of Bmm Me with MeHgCl (1:1 molar ratio) afforded the formation of the 16-membered metallacyclic dinuclear mercury compound (Bmm Me ) 2 Hg 2 Cl 4 , in which the two Cl atoms are located inside the ring, whereas due to the large size of the I atom, a similar reaction with MeHgI yielded polymeric [(Bmm Me ) 2 HgI 2 ] m ·(MeHgI) n . However, the treatment of Bmm Me with ionic [RHg]BF 4 led to the formation of the tetrathione-coordinated mononuclear mercury compound [(Bmm Me ) 2 Hg](BF 4 ) 2 , where BF 4 - serves as a counteranion.

  9. Hydrogen interaction kinetics of Ge dangling bonds at the Si0.25Ge0.75/SiO2 interface

    International Nuclear Information System (INIS)

    Stesmans, A.; Nguyen Hoang, T.; Afanas'ev, V. V.

    2014-01-01

    The hydrogen interaction kinetics of the GeP b1 defect, previously identified by electron spin resonance (ESR) as an interfacial Ge dangling bond (DB) defect occurring in densities ∼7 × 10 12  cm −2 at the SiGe/SiO 2 interfaces of condensation grown (100)Si/a-SiO 2 /Ge 0.75 Si 0.25 /a-SiO 2 structures, has been studied as function of temperature. This has been carried out, both in the isothermal and isochronal mode, through defect monitoring by capacitance-voltage measurements in conjunction with ESR probing, where it has previously been demonstrated the defects to operate as negative charge traps. The work entails a full interaction cycle study, comprised of analysis of both defect passivation (pictured as GeP b1 -H formation) in molecular hydrogen (∼1 atm) and reactivation (GeP b1 -H dissociation) in vacuum. It is found that both processes can be suitably described separately by the generalized simple thermal (GST) model, embodying a first order interaction kinetics description based on the basic chemical reactions GeP b1  + H 2  → GeP b1 H + H and GeP b1 H → GeP b1  + H, which are found to be characterized by the average activation energies E f  = 1.44 ± 0.04 eV and E d  = 2.23 ± 0.04 eV, and attendant, assumedly Gaussian, spreads σE f  = 0.20 ± 0.02 eV and σE d  = 0.15 ± 0.02 eV, respectively. The substantial spreads refer to enhanced interfacial disorder. Combination of the separately inferred kinetic parameters for passivation and dissociation results in the unified realistic GST description that incorporates the simultaneous competing action of passivation and dissociation, and which is found to excellently account for the full cycle data. For process times t a  ∼ 35 min, it is found that even for the optimum treatment temperature ∼380 °C, only ∼60% of the GeP b1 system can be electrically silenced, still far remote from device grade level. This

  10. Effect of irradiation on thermal expansion of SiCf/SiC composites

    International Nuclear Information System (INIS)

    Senor, D.J.; Trimble, D.J.; Woods, J.J.

    1996-06-01

    Linear thermal expansion was measured on five different SiC-fiber-reinforced/SiC-matrix (SiC f /SiC) composite types in the unirradiated and irradiated conditions. Two matrices were studied in combination with Nicalon CG reinforcement and a 150 nm PyC fiber/matrix interface: chemical vapor infiltrated (CVI) SiC and liquid-phase polymer impregnated precursor (PIP) SiC. Composites of PIP SiC with Tyranno and HPZ fiber reinforcement and a 150 nm PyC interface were also tested, as were PIP SiC composites with Nicalon CG reinforcement and a 150 nm BN fiber/matrix interface. The irradiation was conducted in the Experimental Breeder Reactor-II at a nominal temperature of 1,000 C to doses of either 33 or 43 dpa-SiC. Irradiation caused complete fiber/matrix debonding in the CVI SiC composites due to a dimensional stability mismatch between fiber and matrix, while the PIP SiC composites partially retained their fiber/matrix interface after irradiation. However, the thermal expansion of all the materials tested was found to be primarily dependent on the matrix and independent of either the fiber or the fiber/matrix interface. Further, irradiation had no significant effect on thermal expansion for either the CVI SiC or PIP SiC composites. In general, the thermal expansion of the CVI SiC composites exceeded that of the PIP SiC composites, particularly at elevated temperatures, but the expansion of both matrix types was less than chemical vapor deposited (CVD) β-SiC at all temperatures

  11. Oxidation-resistant interface coatings for SiC/SiC composites

    Energy Technology Data Exchange (ETDEWEB)

    Stinton, D.P.; Kupp, E.R.; Hurley, J.W.; Lowden, R.A. [Oak Ridge National Lab., TN (United States)] [and others

    1996-08-01

    The characteristics of the fiber-matrix interfaces in ceramic matrix composites control the mechanical behavior of these composites. Finite element modeling (FEM) was performed to examine the effect of interface coating modulus and coefficient of thermal expansion on composite behavior. Oxide interface coatings (mullite and alumina-titania) produced by a sol-gel method were chosen for study as a result of the FEM results. Amorphous silicon carbide deposited by chemical vapor deposition (CVD) is also being investigated for interface coatings in SiC-matrix composites. Processing routes for depositing coatings of these materials were developed. Composites with these interfaces were produced and tested in flexure both as-processed and after oxidation to examine the suitability of these materials as interface coatings for SiC/SiC composites in fossil energy applications.

  12. Microstructural development in NiAl/Ni-Si-B/Ni transient liquid phase bonds

    International Nuclear Information System (INIS)

    Gale, W.F.; Orel, S.V.

    1996-01-01

    A transmission electron microscopy (TEM) based investigation of microstructural development during transient liquid phase bonding of near-stoichiometric NiAl to commercial purity nickel is presented in this article. The work described employed Ni-4.5 wt pct Si-3.2 wt pct B (BNi-3) melt-spun interlayers. The precipitation of both Ni-Al based phases and borides within the joint and adjacent substrate regions is discussed. The article considers martensite formation (within the NiAl substrate) and the precipitation of L1 2 type phases (both within the joint and at the interface with the NiAl substrate). The relative roles of the two substrate materials (NiAl and Ni) in the isothermal resolidification process are identified. The preferential formation of Ni 3 B boride phases in the Ni substrate near the original location of the Ni substrate-joint interface is discussed and contrasted with the absence of similar events in the NiAl substrate

  13. SiC/SiC composites through transient eutectic-phase route for fusion applications

    International Nuclear Information System (INIS)

    Katoh, Y.; Kohyama, A.; Nozawa, T.; Sato, M.

    2004-01-01

    Factors that may limit attractiveness of silicon-carbide-based ceramic composites to fusion applications include thermal conductivity, applicable design stress, chemical compatibility, hermeticity, radiation stability and fabrication cost. A novel SiC/SiC composite, which has recently been developed through nano-infiltration and transient eutectic-phase (NITE) processing route, surpasses conventional materials in many of these properties. In this paper, the latest development, property evaluation and prospect of the NITE SiC/SiC composites are briefly reviewed. The topics range from fundamental aspects of process development to industrial process development. Elevated temperature strength, fracture behavior, and thermo-physical properties in various environments are summarized. Future directions of materials and application technology development are also discussed

  14. Synthesis, structure and chemical bonding of CaFe{sub 2−x}Rh{sub x}Si{sub 2} (x=0, 1.32, and 2) and SrCo{sub 2}Si{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Hlukhyy, Viktor, E-mail: viktor.hlukhyy@lrz.tu-muenchen.de; Hoffmann, Andrea V.; Fässler, Thomas F.

    2013-07-15

    The finding of superconductivity in Ba{sub 0.6}K{sub 0.4}Fe{sub 2}As{sub 2} put the attention on the investigation of compounds that crystallize with ThCr{sub 2}Si{sub 2} structure type such as AT{sub 2}X{sub 2} (A=alkali/alkaline earth/rare earth element; T=transition metal and X=element of the 13–15th group). In this context the silicides CaFe{sub 2}Si{sub 2}, CaFe{sub 0.68(6)}Rh{sub 1.32(6)}Si{sub 2}, CaRh{sub 2}Si{sub 2} and SrCo{sub 2}Si{sub 2} have been synthesized by reaction of the elements under an argon atmosphere. Single crystals were obtained by special heat treatment in welded niobium/tantalum ampoules. The compounds were investigated by means of powder and single crystal X-ray diffraction. All compounds crystallize in the ThCr{sub 2}Si{sub 2}-type structure with space group I4/mmm (No. 139): a=3.939(1) Å, c=10.185(1) Å, R{sub 1}=0.045, 85 F{sup 2} values, 8 variable parameters for CaFe{sub 2}Si{sub 2}; a=4.0590(2) Å, c=9.9390(8) Å, R{sub 1}=0.030, 90 F{sup 2} values, 10 variable parameters for CaFe{sub 0.68(6)}Rh{sub 1.32(6)}Si{sub 2}; a=4.0695(1) Å, c=9.9841(3) Å, R{sub 1}=0.031, 114 F{sup 2} values, 9 variable parameters for CaRh{sub 2}Si{sub 2}; and a=3.974(1) Å, c=10.395(1) Å, R{sub 1}=0.036, 95 F{sup 2} values, 8 variable parameters for SrCo{sub 2}Si{sub 2}. The structure of SrCo{sub 2}Si{sub 2} contains isolated [Co{sub 2}Si{sub 2}]{sup 2−} 2D-layers in the ab-plane whereas in CaFe{sub 2−x}Rh{sub x}Si{sub 2} the [T{sub 2}Si{sub 2}] layers (T=Fe and Rh) are interconnected along the c-axis via Si3Si bonds resulting in a three-dimentional (3D) [T{sub 2}Si{sub 2}]{sup 2−} polyanions and therefore belong to the so-called collapsed form of the ThCr{sub 2}Si{sub 2}-type structure. The SrCo{sub 2}Si{sub 2} and CaRh{sub 2}Si{sub 2} are isoelectronic to the parent 122 iron–pnictide superconductors AeFe{sub 2}As{sub 2} (Ae=alkaline earth elements), whereas CaFe{sub 2}Si{sub 2} is a full substituted variant (As/Si) of CaFe{sub 2}As{sub 2

  15. Wearing mechanisms of Al{sub 2} O{sub 3}-Si C-C for torpedo car; Mecanismos de desgate dos refratarios de Al{sub 2}O{sub 3}-SiC-C para carro-torpedo

    Energy Technology Data Exchange (ETDEWEB)

    Quintela, Marco Antonio; Correa Filho, Gerson [USIMINAS, Ipatinga, MG (Brazil). Centro de Pesquisa e Desenvolvimento; Correa Filho, Joao Rodrigues [USIMINAS, Ipatinga, MG (Brazil). Gerencia de Manutencao de Refratarios e Civil

    1995-12-31

    Recently, with the improvement in the hot metal pretreatment practice in the torpedo car at USIMINAS, refractory linings were subjected to severe working conditions resulting in a considerable change in the performance of Al{sub 2} O{sub 3}-Si C-C bricks. A Post Mortem study of the torpedo car linings was carried out using ceramographic analysis and scanning electron microscopy. It was found that the wear mechanisms of Al{sub 2} O{sub 3}-Si C-C bricks comprise mainly the development of dense and secondary phases around Al{sub 2} O{sub 3} particles, together with the formation of low refractoriness phases on the slag and refractory interface. (author) 5 figs.

  16. Fabrication and characterization of 2.5D and 3D SiC{sub f}/SiC composites

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Shuang, E-mail: zhsh6007@126.co [Key Laboratory of Advanced Ceramic Fibers and Composites, National University of Defense Technology, Changsha 410073 (China); School of Mechanical, Aerospace, and Civil Engineering, University of Manchester, Manchester M13 9PL (United Kingdom); Zhou, Xingui; Yu, Jinshan [Key Laboratory of Advanced Ceramic Fibers and Composites, National University of Defense Technology, Changsha 410073 (China); Mummery, Paul [School of Mechanical, Aerospace, and Civil Engineering, University of Manchester, Manchester M13 9PL (United Kingdom)

    2013-10-15

    Highlights: • 2.5D and 3D KD-I SiC fiber fabrics were used as the reinforcement. • Closed porosity was investigated by X-ray tomographic techniques. • The properties of the composites were improved by the CVD process. -- Abstract: SiC{sub f}/SiC composites are considered promising candidate materials for fusion applications. 2.5D and 3D KD-I SiC fiber fabrics were used as the reinforcement and SiC{sub f}/SiC composites were fabricated via polymer impregnation and pyrolysis (PIP) process and coated with chemical vapor deposited (CVD) SiC. The porosity, thermal conductivity and mechanical property of the composites were characterized. The results indicated that 2.5D and 3D SiC{sub f}/SiC composites fabricated via PIP process exhibited high porosity, and hence low thermal conductivity. After the CVD process, the density, thermal conductivity and mechanical properties of the composites were increased.

  17. Reaction sintering of a clay-containing silicon nitride bonded silicon carbide refractory

    International Nuclear Information System (INIS)

    Swenser, S.P.; Cheng, Y.B.

    1998-01-01

    Aspects of the reaction sequence for the reaction bonding of a cast refractory, which in the green state was composed of 79 wt-% SiC grit, 16 wt-% Si powder and 5 wt-% clay were established. As it was fired up to 1600 deg C in flowing N 2 (g), weight gains were noted and phase evolution was monitored by X-ray diffraction. However, details of the reaction sequence were not determined directly from this material because several reaction-bonding processes occurred simultaneously. Reaction features were ascertained by contrasting the weight changes and phase evolution in the refractory with those observed during reaction-bonding of (a) Si and clay without the SiC and (b) SiC and clay without the Si. In addition to silicon nitridation and the development of sialon phases by silicothermal and carbothermal reduction-nitridation processes, indirect evidence suggested that α-Si 3 N 4 formed by the carbothermal reduction-nitridation (CRN) of SiO(g). Copyright (1998) Australasian Ceramic Society

  18. An improved design of TRISO particle with porous SiC inner layer by fluidized bed-chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Rongzheng; Liu, Malin, E-mail: liumalin@tsinghua.edu.cn; Chang, Jiaxing; Shao, Youlin; Liu, Bing

    2015-12-15

    Tristructural-isotropic (TRISO) particle has been successful in high temperature gas cooled reactor (HTGR), but an improved design is required for future development. In this paper, the coating layers are reconsidered, and an improved design of TRISO particle with porous SiC inner layer is proposed. Three methods of preparing the porous SiC layer, called high methyltrichlorosilane (MTS) concentration method, high Ar concentration method and hexamethyldisilane (HMDS) method, are experimentally studied. It is indicated that porous SiC layer can be successfully prepared and the density of SiC layer can be adjusted by tuning the preparation parameters. Microstructure and characterization of the improved TRISO coated particle are given based on scanning electron microscope (SEM), X-ray diffraction (XRD), Raman scattering and energy dispersive X-ray (EDX) analysis. It can be found that the improved TRISO coated particle with porous SiC layer can be mass produced successfully. The formation mechanisms of porous SiC layer are also discussed based on the fluidized bed-chemical vapor deposition principle. - Graphical abstract: An improved design of TRISO particle with porous SiC inner layer to replace the inner porous pyrolytic carbon layer was proposed and prepared by FB-CVD method. This new design is aimed to reduce the total internal pressure of the particles by reducing the formation of CO and to reduce the risks of amoeba effect. - Highlights: • An improved design of TRISO particle with porous SiC inner layer was proposed. • Three methods of preparing porous SiC layer are proposed and experimentally studied. • The density of porous SiC layer can be controlled by adjusting experimental parameters. • Formation mechanisms of porous SiC layer were given based on the FB-CVD principle. • TRISO particles with porous SiC inner layer were mass produced successfully.

  19. Correlation between the dielectric constant and X-ray diffraction pattern of Si-O-C thin films with hydrogen bonds

    International Nuclear Information System (INIS)

    Oh, Teresa; Oh, Kyoung Suk; Lee, Kwang-Man; Choi, Chi Kyu

    2004-01-01

    The amorphous structure of organic-inorganic hybrid type Si-O-C thin films was studied using the first principles molecular-dynamics method with density functional techniques. The correlation between the dielectric constant and the degree of amorphous structure in organic-inorganic hybrid type Si-O-C thin films was studied. Si-O-C thin films were deposited by high-density plasma chemical vapor deposition using bis-trimethylsilylmethane and oxygen precursors. As-deposited films and films annealed at 500 deg. C were analyzed by X-ray diffraction (XRD). For quantitative analysis, the X-ray diffraction patterns of the samples were transformed to the radial distribution function (RDF) using Fourier analysis. Hybrid type Si-O-C thin films can be divided into three types using their amorphous structure and the dielectric constant: those with organic, hybrid, and inorganic properties

  20. Controlled surface chemistry of diamond/β-SiC composite films for preferential protein adsorption.

    Science.gov (United States)

    Wang, Tao; Handschuh-Wang, Stephan; Yang, Yang; Zhuang, Hao; Schlemper, Christoph; Wesner, Daniel; Schönherr, Holger; Zhang, Wenjun; Jiang, Xin

    2014-02-04

    Diamond and SiC both process extraordinary biocompatible, electronic, and chemical properties. A combination of diamond and SiC may lead to highly stable materials, e.g., for implants or biosensors with excellent sensing properties. Here we report on the controllable surface chemistry of diamond/β-SiC composite films and its effect on protein adsorption. For systematic and high-throughput investigations, novel diamond/β-SiC composite films with gradient composition have been synthesized using the hot filament chemical vapor deposition (HFCVD) technique. As revealed by scanning electron microscopy (SEM), the diamond/β-SiC ratio of the composite films shows a continuous change from pure diamond to β-SiC over a length of ∼ 10 mm on the surface. X-ray photoelectron spectroscopy (XPS) and time-of-flight secondary ion mass spectrometry (ToF-SIMS) was employed to unveil the surface termination of chemically oxidized and hydrogen treated surfaces. The surface chemistry of the composite films was found to depend on diamond/β-SiC ratio and the surface treatment. As observed by confocal fluorescence microscopy, albumin and fibrinogen were preferentially adsorbed from buffer: after surface oxidation, the proteins preferred to adsorb on diamond rather than on β-SiC, resulting in an increasing amount of proteins adsorbed to the gradient surfaces with increasing diamond/β-SiC ratio. By contrast, for hydrogen-treated surfaces, the proteins preferentially adsorbed on β-SiC, leading to a decreasing amount of albumin adsorbed on the gradient surfaces with increasing diamond/β-SiC ratio. The mechanism of preferential protein adsorption is discussed by considering the hydrogen bonding of the water self-association network to OH-terminated surfaces and the change of the polar surface energy component, which was determined according to the van Oss method. These results suggest that the diamond/β-SiC gradient film can be a promising material for biomedical applications which

  1. Electrical properties of SiO{sub 2}/SiC interfaces on 2°-off axis 4H-SiC epilayers

    Energy Technology Data Exchange (ETDEWEB)

    Vivona, M., E-mail: marilena.vivona@imm.cnr.it [CNR-IMM, Strada VIII, n. 5 – Zona Industriale, I-95121 Catania (Italy); Fiorenza, P. [CNR-IMM, Strada VIII, n. 5 – Zona Industriale, I-95121 Catania (Italy); Sledziewski, T.; Krieger, M. [Friedrich-Alexander-University (FAU) Erlangen-Nuremberg, Department of Physics, Staudtstrasse 7/Bld. A3, D-91058 Erlangen (Germany); Chassagne, T.; Zielinski, M. [NOVASiC, Savoie Technolac, BP267, F-73375 Le Bourget-du-Lac Cedex (France); Roccaforte, F. [CNR-IMM, Strada VIII, n. 5 – Zona Industriale, I-95121 Catania (Italy)

    2016-02-28

    Graphical abstract: - Highlights: • Processing and electrical characterization of MOS capacitors fabricated on 4H-SiC epilayers grown on 2°-off axis heavily doped substrates. • Excellent characteristics of the SiO{sub 2}/4H-SiC interface in terms of flatness, interface state density and oxide reliability. • Electrical behavior of the MOS devices comparable with that obtained for the state-of-the-art of 4°-off axis 4H-SiC material. • Demonstration of the maturity of the 2°-off axis material for application in 4H-SiC MOSFET device technology. - Abstract: In this paper, the electrical properties of the SiO{sub 2}/SiC interface on silicon carbide (4H-SiC) epilayers grown on 2°-off axis substrates were studied. After epilayer growth, chemical mechanical polishing (CMP) allowed to obtain an atomically flat surface with a roughness of 0.14 nm. Metal-oxide-semiconductor (MOS) capacitors, fabricated on this surface, showed an interface state density of ∼1 × 10{sup 12} eV{sup −1} cm{sup −2} below the conduction band, a value which is comparable to the standard 4°-off-axis material commonly used for 4H-SiC MOS-based device fabrication. Moreover, the Fowler–Nordheim and time-zero-dielectric breakdown analyses confirmed an almost ideal behavior of the interface. The results demonstrate the maturity of the 2°-off axis material for 4H-SiC MOSFET device fabrication.

  2. Hydrogen spillover in Pt-single-walled carbon nanotube composites: formation of stable C-H bonds.

    Science.gov (United States)

    Bhowmick, Ranadeep; Rajasekaran, Srivats; Friebel, Daniel; Beasley, Cara; Jiao, Liying; Ogasawara, Hirohito; Dai, Hongjie; Clemens, Bruce; Nilsson, Anders

    2011-04-13

    Using in situ electrical conductivity and ex situ X-ray photoelectron spectroscopy (XPS) measurements, we have examined how the hydrogen uptake of single-walled carbon nanotubes (SWNTs) is influenced by the addition of Pt nanoparticles. The conductivity of platinum-sputtered single-walled carbon nanotubes (Pt-SWNTs) during molecular hydrogen exposure decreased more rapidly than that of the corresponding pure SWNTs, which supports a hydrogenation mechanism facilitated by "spillover" of dissociated hydrogen from the Pt nanoparticles. C 1s XPS spectra indicate that the Pt-SWNTs store hydrogen by means of chemisorption, that is, covalent C-H bond formation: molecular hydrogen charging at elevated pressure (8.27 bar) and room temperature yielded Pt-SWNTs with up to 16 ± 1.5 at. % sp(3)-hybridized carbon atoms, which corresponds to a hydrogen-storage capacity of 1.2 wt % (excluding the weight of Pt nanoparticles). Pt-SWNTs prepared by the Langmuir-Blodgett (LB) technique exhibited the highest Pt/SWNT ratio and also the best hydrogen uptake. © 2011 American Chemical Society

  3. In situ observation of mechanical damage within a SiC-SiC ceramic matrix composite

    Energy Technology Data Exchange (ETDEWEB)

    Saucedo-Mora, L. [Institute Eduardo Torroja for Construction Sciences-CSIC, Madrid (Spain); Department of Materials, University of Oxford (United Kingdom); Lowe, T. [Manchester X-ray Imaging Facility, The University of Manchester (United Kingdom); Zhao, S. [Department of Materials, University of Oxford (United Kingdom); Lee, P.D. [Research Complex at Harwell, Rutherford Appleton Laboratory (United Kingdom); Mummery, P.M. [School of Mechanical, Aerospace and Civil Engineering, The University of Manchester (United Kingdom); Marrow, T.J., E-mail: james.marrow@materials.ox.ac.uk [Department of Materials, University of Oxford (United Kingdom)

    2016-12-01

    SiC-SiC ceramic matrix composites are candidate materials for fuel cladding in Generation IV nuclear fission reactors and as accident tolerant fuel clad in current generation plant. Experimental methods are needed that can detect and quantify the development of mechanical damage, to support modelling and qualification tests for these critical components. In situ observations of damage development have been obtained of tensile and C-ring mechanical test specimens of a braided nuclear grade SiC-SiC ceramic composite tube, using a combination of ex situ and in situ computed X-ray tomography observation and digital volume correlation analysis. The gradual development of damage by matrix cracking and also the influence of non-uniform loading are examined. - Highlights: • X-ray tomography with digital volume correlation measures 3D deformation in situ. • Cracking and damage in the microstructure can be detected using the strain field. • Fracture can initiate from the monolithic coating of a SiC-SiC ceramic composite.

  4. In situ observation of mechanical damage within a SiC-SiC ceramic matrix composite

    International Nuclear Information System (INIS)

    Saucedo-Mora, L.; Lowe, T.; Zhao, S.; Lee, P.D.; Mummery, P.M.; Marrow, T.J.

    2016-01-01

    SiC-SiC ceramic matrix composites are candidate materials for fuel cladding in Generation IV nuclear fission reactors and as accident tolerant fuel clad in current generation plant. Experimental methods are needed that can detect and quantify the development of mechanical damage, to support modelling and qualification tests for these critical components. In situ observations of damage development have been obtained of tensile and C-ring mechanical test specimens of a braided nuclear grade SiC-SiC ceramic composite tube, using a combination of ex situ and in situ computed X-ray tomography observation and digital volume correlation analysis. The gradual development of damage by matrix cracking and also the influence of non-uniform loading are examined. - Highlights: • X-ray tomography with digital volume correlation measures 3D deformation in situ. • Cracking and damage in the microstructure can be detected using the strain field. • Fracture can initiate from the monolithic coating of a SiC-SiC ceramic composite.

  5. Current status and recent research achievements in SiC/SiC composites

    Energy Technology Data Exchange (ETDEWEB)

    Katoh, Y., E-mail: katohy@ornl.gov [Oak Ridge National Laboratory, Oak Ridge, TN (United States); Snead, L.L. [Oak Ridge National Laboratory, Oak Ridge, TN (United States); Henager, C.H. [Pacific Northwest National Laboratory, Richland, WA (United States); Nozawa, T. [Japan Atomic Energy Agency, Rokkasho, Aomori (Japan); Hinoki, T. [Institute of Advanced Energy, Kyoto University, Kyoto (Japan); Iveković, A.; Novak, S. [Jožef Stefan Institute, Ljubljana (Slovenia); Gonzalez de Vicente, S.M. [EFDA Close Support Unit, Garching (Germany)

    2014-12-15

    The silicon carbide fiber-reinforced silicon carbide matrix (SiC/SiC) composite system for fusion applications has seen a continual evolution from development a fundamental understanding of the material system and its behavior in a hostile irradiation environment to the current effort which is directed at a broad-based program of technology maturation program. In essence, over the past few decades this material system has steadily moved from a laboratory curiosity to an engineering material, both for fusion structural applications and other high performance application such as aerospace. This paper outlines the recent international scientific and technological achievements towards the development of SiC/SiC composite material technologies for fusion application and discusses future research directions. It also reviews the materials system in the larger context of progress to maturity as an engineering material for both the larger nuclear community and broader engineering applications.

  6. Current status and recent research achievements in SiC/SiC composites

    International Nuclear Information System (INIS)

    Katoh, Y.; Snead, L.L.; Henager, C.H.; Nozawa, T.; Hinoki, T.; Iveković, A.; Novak, S.; Gonzalez de Vicente, S.M.

    2014-01-01

    The silicon carbide fiber-reinforced silicon carbide matrix (SiC/SiC) composite system for fusion applications has seen a continual evolution from development a fundamental understanding of the material system and its behavior in a hostile irradiation environment to the current effort which is directed at a broad-based program of technology maturation program. In essence, over the past few decades this material system has steadily moved from a laboratory curiosity to an engineering material, both for fusion structural applications and other high performance application such as aerospace. This paper outlines the recent international scientific and technological achievements towards the development of SiC/SiC composite material technologies for fusion application and discusses future research directions. It also reviews the materials system in the larger context of progress to maturity as an engineering material for both the larger nuclear community and broader engineering applications

  7. Current status and recent research achievements in SiC/SiC composites

    Science.gov (United States)

    Katoh, Y.; Snead, L. L.; Henager, C. H.; Nozawa, T.; Hinoki, T.; Iveković, A.; Novak, S.; Gonzalez de Vicente, S. M.

    2014-12-01

    The silicon carbide fiber-reinforced silicon carbide matrix (SiC/SiC) composite system for fusion applications has seen a continual evolution from development a fundamental understanding of the material system and its behavior in a hostile irradiation environment to the current effort which is directed at a broad-based program of technology maturation program. In essence, over the past few decades this material system has steadily moved from a laboratory curiosity to an engineering material, both for fusion structural applications and other high performance application such as aerospace. This paper outlines the recent international scientific and technological achievements towards the development of SiC/SiC composite material technologies for fusion application and discusses future research directions. It also reviews the materials system in the larger context of progress to maturity as an engineering material for both the larger nuclear community and broader engineering applications.

  8. Growing GaN LEDs on amorphous SiC buffer with variable C/Si compositions

    Science.gov (United States)

    Cheng, Chih-Hsien; Tzou, An-Jye; Chang, Jung-Hung; Chi, Yu-Chieh; Lin, Yung-Hsiang; Shih, Min-Hsiung; Lee, Chao-Kuei; Wu, Chih-I; Kuo, Hao-Chung; Chang, Chun-Yen; Lin, Gong-Ru

    2016-01-01

    The epitaxy of high-power gallium nitride (GaN) light-emitting diode (LED) on amorphous silicon carbide (a-SixC1−x) buffer is demonstrated. The a-SixC1−x buffers with different nonstoichiometric C/Si composition ratios are synthesized on SiO2/Si substrate by using a low-temperature plasma enhanced chemical vapor deposition. The GaN LEDs on different SixC1−x buffers exhibit different EL and C-V characteristics because of the extended strain induced interfacial defects. The EL power decays when increasing the Si content of SixC1−x buffer. The C-rich SixC1−x favors the GaN epitaxy and enables the strain relaxation to suppress the probability of Auger recombination. When the SixC1−x buffer changes from Si-rich to C-rich condition, the EL peak wavelengh shifts from 446 nm to 450 nm. Moreover, the uniform distribution contour of EL intensity spreads between the anode and the cathode because the traping density of the interfacial defect gradually reduces. In comparison with the GaN LED grown on Si-rich SixC1−x buffer, the device deposited on C-rich SixC1−x buffer shows a lower turn-on voltage, a higher output power, an external quantum efficiency, and an efficiency droop of 2.48 V, 106 mW, 42.3%, and 7%, respectively. PMID:26794268

  9. Microwave joining of SiC

    Energy Technology Data Exchange (ETDEWEB)

    Silberglitt, R.; Ahmad, I. [FM Technologies, Inc., Fairfax, VA (United States); Black, W.M. [George Mason Univ., Fairfax, VA (United States)] [and others

    1995-05-01

    The purpose of this work is to optimize the properties of SiC-SiC joints made using microwave energy. The current focus is on optimization of time-temperature profiles, production of SiC from chemical precursors, and design of new applicators for joining of long tubes.

  10. Infrared studies of the evolution of the C{sub i}O{sub i}(Si{sub I}) defect in irradiated Si upon isothermal anneals

    Energy Technology Data Exchange (ETDEWEB)

    Angeletos, T.; Londos, C. A., E-mail: hlontos@phys.uoa.gr [University of Athens, Solid State Physics Section, Panepistimiopolis Zografos, Athens 157 84 (Greece); Chroneos, A., E-mail: alexander.chroneos@imperial.ac.uk [Faculty of Engineering, Environment and Computing, Coventry University, Priory Street, Coventry CV1 5FB (United Kingdom); Department of Materials, Imperial College London, London SW7 2AZ (United Kingdom)

    2016-03-28

    Carbon-oxygen-self-interstitial complexes were investigated in silicon by means of Fourier transform infrared spectroscopy. Upon irradiation, the C{sub i}O{sub i} defect (C{sub 3}) forms which for high doses attract self-interstitials (Si{sub I}s) leading to the formation of the C{sub i}O{sub i}(Si{sub I}) defect (C{sub 4}) with two well-known related bands at 939.6 and 1024 cm{sup −1}. The bands are detectable in the spectra both in room temperature (RT) and liquid helium (LH) temperature. Upon annealing at 150 °C, these bands were transformed to three bands at 725, 952, and 973 cm{sup −1}, detectable only at LH temperatures. Upon annealing at 220 °C, these bands were transformed to three bands at 951, 969.5, and 977 cm{sup −1}, detectable both at RT and LH temperatures. Annealing at 280 °C resulted in the transformation of these bands to two new bands at 973 and 1024 cm{sup −1}. The latter bands disappear from the spectra upon annealing at 315 °C without the emergence of other bands in the spectra. Considering reaction kinetics and defect metastability, we developed a model to describe the experimental results. Annealing at 150 °C triggers the capturing of Si{sub I}s by the C{sub 4} defect leading to the formation of the C{sub i}O{sub i}(Si{sub I}){sub 2} complex. The latter structure appears to be bistable: measuring at LH, the defect is in configuration C{sub i}O{sub i}(Si{sub I}){sub 2} giving rise to the bands at 725, 952, and 973 cm{sup −1}, whereas on measurements at RT, the defect converts to another configuration C{sub i}O{sub i}(Si{sub I}){sub 2}{sup *} without detectable bands in the spectra. Possible structures of the two C{sub i}O{sub i}(Si{sub I}){sub 2} configurations are considered and discussed. Upon annealing at 220 °C, additional Si{sub I}s are captured by the C{sub i}O{sub i}(Si{sub I}){sub 2} defect leading to the formation of the C{sub i}O{sub i}(Si{sub I}){sub 3} complex, which in turn on annealing at

  11. SiC/SiC fuel cladding R and D Project 'SCARLET': Status and future plan

    International Nuclear Information System (INIS)

    Kishimoto, Hirotatsu; Kohyama, Akira

    2015-01-01

    This paper provides the recent progress in SiC/SiC development towards early utilisation for LWRs based on NITE method. After the March 11 Disaster in East-Japan, ensuring safe technology for LWR became a top priority R and D in nuclear energy policy of Japan. Along this line, replacement of Zircaloy claddings with SiC/SiC based fuel cladding is becoming one of the most attractive options and a MEXT fund based project, SCARLET, and a METI fund based project have been launched as 5-year termed projects at Muroran Institute of Technology. These projects care for NITE process for making long SiC/SiC fuel pins and connecting technology integration. The SCARLET project also includes coolant compatibility and irradiation effect evaluations as LWR and LMFBR materials. The outline and the present status of the SCARLET project will be briefly introduced in the present paper. (authors)

  12. A Novel DBC Layout for Current Imbalance Mitigation in SiC MOSFET Multichip Power Modules

    DEFF Research Database (Denmark)

    Li, Helong; Munk-Nielsen, Stig; Beczkowski, Szymon

    2016-01-01

    This paper proposes a novel Direct Bonded Copper (DBC) layout for mitigating the current imbalance among the paralleled SiC MOSFET dies in multichip power modules. Compared to the traditional layout, the proposed DBC layout significantly reduces the circuit mismatch and current coupling effect......, which consequently improves the current sharing among the paralleled SiC MOSFET dies in power module. Mathematic analysis and circuit model of the DBC layout are presented to elaborate on the superior features of the proposed DBC layout. Simulation and experimental results further verify the theoretical...

  13. Joining of thin thickness SiCf/SiC composites: research of a joining composition and of an associated elaboration process

    International Nuclear Information System (INIS)

    Jacques, E.

    2012-01-01

    The present work is part of the Fourth Generation Fast Reactors program. One of the key issues is the joining of the SiC f /SiC ceramic matrix composites (CMC) to seal the combustible cladding. At the present time, no chemical composition as a joint is refractive enough to face the expected operating temperatures. The aims of this study are the following: (1) the identification of a joining composition and its associated elaboration process answering the specifications, (2) the validation of a local and fast heating process and (3) the definition of mechanical tests to characterise these joinings. We describe the methodology and the results for joining SiC and SiC f /SiC substrates at solid and liquid state using metallic silicides. Joint integrity and joint strength can be improved by adding small SiC particles to the silicides powders. Chemical reactivity, wettability tests and thermomechanical properties analysis have been carried out on the joints. Cross sections of the assembly were prepared to study the joint/substrate chemical bonding, the cracking and the crack deflection in the vicinity of the interface. Also, one of the challenge consists in using a local heating at a high temperature (around 1800 C) for a short time to avoid the degradation of the composite structure. The assemblies have been then performed in an inductive furnace but in order to prepare the joining technology, trials of local heating have also been investigated with a CO 2 laser beam and a microwave generator. Finally, descriptions of the 4-points bending mechanical test used and the associated results are presented. (author) [fr

  14. Structural and optical modification in 4H-SiC following 30 keV silver ion irradiation

    Science.gov (United States)

    Kaushik, Priya Darshni; Aziz, Anver; Siddiqui, Azher M.; Lakshmi, G. B. V. S.; Syväjärvi, Mikael; Yakimova, Rositsa; Yazdi, G. Reza

    2018-05-01

    The market of high power, high frequency and high temperature based electronic devices is captured by SiC due to its superior properties like high thermal conductivity and high sublimation temperature and also due to the limitation of silicon based electronics in this area. There is a need to investigate effect of ion irradiation on SiC due to its application in outer space as outer space is surrounded both by low and high energy ion irradiations. In this work, effect of low energy ion irradiation on structural and optical property of 4H-SiC is investigated. ATR-FTIR is used to study structural modification and UV-Visible spectroscopy is used to study optical modifications in 4H-SiC following 30 keV Ag ion irradiation. FTIR showed decrease in bond density of SiC along the ion path (track) due to the creation of point defects. UV-Visible absorption spectra showed decrease in optical band gap from 3.26 eV to 2.9 eV. The study showed degradation of SiC crystallity and change in optical band gap following low energy ion irradiation and should be addressed while fabricationg devices based on SiC for outer space application. Additionally, this study provides a platform for introducing structural and optical modification in 4H-SiC using ion beam technology in a controlled manner.

  15. Epitaxial growth of 3C-SiC by using C{sub 60} as a carbon source; Untersuchungen zum epitaktischen Wachstum von 3C-SiC bei Verwendung einer C{sub 60}-Kohlenstoffquelle

    Energy Technology Data Exchange (ETDEWEB)

    Schreiber, Sascha

    2006-01-15

    Within this work epitaxial 3C-SiC-films were grown on Si(001) substrates and on ion beam synthesized 3C-SiC(001) pseudo substrates. A rather new process was used which is based on the simultaneous deposition of C60 and Si. In order to set up the necessary experimental conditions an ultra-high vacuum chamber has been designed and built. A RHEED system was used to examine SiC film growth in-situ. Using the described technique 3C-SiC films were grown void-free on Si(001) substrates. Deposition rates of C60 and Si were chosen adequately to maintain a Si:C ratio of approximately one during the deposition process. It was shown that stoichiometric and epitaxial 3C-SiC growth with the characteristic relationship (001)[110]Si(001)[110]3C-SiC could be achieved. TEM investigations revealed that the grown 3C-SiC films consist of individual grains that extend from the Si substrate to the film surface. Two characteristic grain types could be identified. The correlation between structure and texture of void-free grown 3C-SiC films and film thickness was studied by X-ray diffraction (XRD). Pole figure measurements showed that thin films only contain first-order 3C-SiC twins. With higher film thickness also second-order twins are found which are located as twin lamellae in grain type 2. Improvement of polar texture with increasing film thickness couldn't be observed in the investigated range of up to 550 nm. On ion beam synthesized 3C-SiC pseudo substrates homoepitaxial 3C-SiC growth could be demonstrated for the first time by using a C{sub 60} carbon source. In respect to the crystalline quality of the grown films the surface quality of the used substrates was identified as a crucial factor. Furthermore a correlation between the ratio of deposition rates of C{sub 60} and Si and 3C-SiC film quality could be found. Under silicon-rich conditions, i.e. with a Si:C ratio of slightly greater one, homoepitaxial 3C-SiC layer-by-layer growth can be achieved. Films grown under these

  16. Influence of helium atoms on the shear behavior of the fiber/matrix interphase of SiC/SiC composite

    Science.gov (United States)

    Jin, Enze; Du, Shiyu; Li, Mian; Liu, Chen; He, Shihong; He, Jian; He, Heming

    2016-10-01

    Silicon carbide has many attractive properties and the SiC/SiC composite has been considered as a promising candidate for nuclear structural materials. Up to now, a computational investigation on the properties of SiC/SiC composite varying in the presence of nuclear fission products is still missing. In this work, the influence of He atoms on the shear behavior of the SiC/SiC interphase is investigated via Molecular Dynamics simulation following our recent paper. Calculations are carried out on three dimensional models of graphite-like PyC/SiC interphase and amorphous PyC/SiC interphase with He atoms in different regions (the SiC region, the interface region and the PyC region). In the graphite-like PyC/SiC interphase, He atoms in the SiC region have little influence on the shear strength of the material, while both the shear strength and friction strength may be enhanced when they are in the PyC region. Low concentration of He atoms in the interface region of the graphite-like PyC/SiC interphase increases the shear strength, while there is a reduction of shear strength when the He concentration is high due to the switch of sliding plane. In the amorphous PyC/SiC interphase, He atoms can cause the reduction of the shear strength regardless of the regions that He atoms are located. The presence of He atoms may significantly alter the structure of SiC/SiC in the interface region. The influence of He atoms in the interface region is the most significant, leading to evident shear strength reduction of the amorphous PyC/SiC interphase with increasing He concentration. The behaviors of the interphases at different temperatures are studied as well. The dependence of the shear strengths of the two types of interphases on temperatures is studied as well. For the graphite-like PyC/SiC interphase, it is found strongly related to the regions He atoms are located. Combining these results with our previous study on pure SiC/SiC system, we expect this work may provide new insight

  17. Influence of helium atoms on the shear behavior of the fiber/matrix interphase of SiC/SiC composite

    Energy Technology Data Exchange (ETDEWEB)

    Jin, Enze [State Nuclear Power Research Institute, Beijing, 100029 (China); Du, Shiyu, E-mail: dushiyu@nimte.ac.cn [Engineering Laboratory of Specialty Fibers and Nuclear Energy Materials, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang, 315201 (China); Li, Mian [Engineering Laboratory of Specialty Fibers and Nuclear Energy Materials, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang, 315201 (China); Liu, Chen [Beijing Research Institute of Chemical Engineering and Metallurgy (China); He, Shihong [State Nuclear Power Research Institute, Beijing, 100029 (China); Engineering Laboratory of Specialty Fibers and Nuclear Energy Materials, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang, 315201 (China); He, Jian [Center for Translational Medicine, Department of Biotechnology, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, Liaoning, 116023 (China); He, Heming, E-mail: heheming@snptc.com.cn [State Nuclear Power Research Institute, Beijing, 100029 (China)

    2016-10-15

    Silicon carbide has many attractive properties and the SiC/SiC composite has been considered as a promising candidate for nuclear structural materials. Up to now, a computational investigation on the properties of SiC/SiC composite varying in the presence of nuclear fission products is still missing. In this work, the influence of He atoms on the shear behavior of the SiC/SiC interphase is investigated via Molecular Dynamics simulation following our recent paper. Calculations are carried out on three dimensional models of graphite-like PyC/SiC interphase and amorphous PyC/SiC interphase with He atoms in different regions (the SiC region, the interface region and the PyC region). In the graphite-like PyC/SiC interphase, He atoms in the SiC region have little influence on the shear strength of the material, while both the shear strength and friction strength may be enhanced when they are in the PyC region. Low concentration of He atoms in the interface region of the graphite-like PyC/SiC interphase increases the shear strength, while there is a reduction of shear strength when the He concentration is high due to the switch of sliding plane. In the amorphous PyC/SiC interphase, He atoms can cause the reduction of the shear strength regardless of the regions that He atoms are located. The presence of He atoms may significantly alter the structure of SiC/SiC in the interface region. The influence of He atoms in the interface region is the most significant, leading to evident shear strength reduction of the amorphous PyC/SiC interphase with increasing He concentration. The behaviors of the interphases at different temperatures are studied as well. The dependence of the shear strengths of the two types of interphases on temperatures is studied as well. For the graphite-like PyC/SiC interphase, it is found strongly related to the regions He atoms are located. Combining these results with our previous study on pure SiC/SiC system, we expect this work may provide new insight

  18. Influence of helium atoms on the shear behavior of the fiber/matrix interphase of SiC/SiC composite

    International Nuclear Information System (INIS)

    Jin, Enze; Du, Shiyu; Li, Mian; Liu, Chen; He, Shihong; He, Jian; He, Heming

    2016-01-01

    Silicon carbide has many attractive properties and the SiC/SiC composite has been considered as a promising candidate for nuclear structural materials. Up to now, a computational investigation on the properties of SiC/SiC composite varying in the presence of nuclear fission products is still missing. In this work, the influence of He atoms on the shear behavior of the SiC/SiC interphase is investigated via Molecular Dynamics simulation following our recent paper. Calculations are carried out on three dimensional models of graphite-like PyC/SiC interphase and amorphous PyC/SiC interphase with He atoms in different regions (the SiC region, the interface region and the PyC region). In the graphite-like PyC/SiC interphase, He atoms in the SiC region have little influence on the shear strength of the material, while both the shear strength and friction strength may be enhanced when they are in the PyC region. Low concentration of He atoms in the interface region of the graphite-like PyC/SiC interphase increases the shear strength, while there is a reduction of shear strength when the He concentration is high due to the switch of sliding plane. In the amorphous PyC/SiC interphase, He atoms can cause the reduction of the shear strength regardless of the regions that He atoms are located. The presence of He atoms may significantly alter the structure of SiC/SiC in the interface region. The influence of He atoms in the interface region is the most significant, leading to evident shear strength reduction of the amorphous PyC/SiC interphase with increasing He concentration. The behaviors of the interphases at different temperatures are studied as well. The dependence of the shear strengths of the two types of interphases on temperatures is studied as well. For the graphite-like PyC/SiC interphase, it is found strongly related to the regions He atoms are located. Combining these results with our previous study on pure SiC/SiC system, we expect this work may provide new insight

  19. Reduction of bonding resistance of two-terminal III-V/Si tandem solar cells fabricated using smart-stack technology

    Science.gov (United States)

    Baba, Masaaki; Makita, Kikuo; Mizuno, Hidenori; Takato, Hidetaka; Sugaya, Takeyoshi; Yamada, Noboru

    2017-12-01

    This paper describes a method that remarkably reduces the bonding resistance of mechanically stacked two-terminal GaAs/Si and InGaP/Si tandem solar cells, where the top and bottom cells are bonded using a Pd nanoparticle array. A transparent conductive oxide (TCO) layer, which partially covers the surface of the Si bottom cell below the electrodes of the III-V top cell, significantly enhances the fill factor (FF) and cell conversion efficiency. The partial TCO layer reduces the bonding resistance and thus, increases the FF and efficiency of InGaP/Si by factors of 1.20 and 1.11, respectively. Eventually, the efficiency exceeds 15%. Minimizing the optical losses at the bonding interfaces of the TCO layer is important in the fabrication of high-efficiency solar cells. To help facilitate this, the optical losses in the tandem solar cells are thoroughly characterized through optical simulations and experimental verifications.

  20. Magnetohydrodynamic (MHD) considerations for liquid metal blanket and a SiC/SiC composite structure

    International Nuclear Information System (INIS)

    Scholz, R.; Greeff, J. de; Vinche, C.

    1998-01-01

    The electrical conductivity was measured on SiC/SiC composite specimens, in the as-received conditions and after neutron irradiation, for temperatures between 20 deg. C and 1000 deg. C. The tests were aimed at estimating the magnitude of MHD effects in liquid metal blankets and a SiC/SiC composites structure. The electrical conductivity of the unirradiated samples increased continuously with temperature and ranged from 330 (Ω m) -1 at 20 deg. C to 550 (Ω m) -1 at 1000 deg.C. The irradiation reduced only slightly the magnitude of σ indicating the materials tested cannot be treated as an electrical insulator in a MHD analysis for liquid metal blankets. (authors)

  1. Magnetohydrodynamic (MHD) considerations for liquid metal blanket and a SiC/SiC composite structure

    Energy Technology Data Exchange (ETDEWEB)

    Scholz, R.; Greeff, J. de; Vinche, C. [Commission Europeenne Community, JRC, Vatican City State, Holy See (Italy)

    1998-07-01

    The electrical conductivity was measured on SiC/SiC composite specimens, in the as-received conditions and after neutron irradiation, for temperatures between 20 deg. C and 1000 deg. C. The tests were aimed at estimating the magnitude of MHD effects in liquid metal blankets and a SiC/SiC composites structure. The electrical conductivity of the unirradiated samples increased continuously with temperature and ranged from 330 ({omega} m){sup -1} at 20 deg. C to 550 ({omega} m){sup -1} at 1000 deg.C. The irradiation reduced only slightly the magnitude of {sigma} indicating the materials tested cannot be treated as an electrical insulator in a MHD analysis for liquid metal blankets. (authors)

  2. Tribological Behavior of Si3N4/Ti3SiC2 Contacts Lubricated by Lithium-Based Ionic Liquids

    Directory of Open Access Journals (Sweden)

    Haizhong Wang

    2014-01-01

    Full Text Available The tribological performance of Si3N4 ball sliding against Ti3SiC2 disc lubricated by lithium-based ionic liquids (ILs was investigated using an Optimol SRV-IV oscillating reciprocating friction and wear tester at room temperature (RT and elevated temperature (100°C. Glycerol and the conventional imidazolium-based IL 1-hexyl-3-methylimidazolium bis(trifluoromethylsulfonylimide (L-F106 were used as references under the same experimental conditions. The results show that the lithium-based ILs had higher thermal stabilities than glycerol and lower costs associated with IL preparation than L-F106. The tribotest results show that the lithium-based ILs were effective in reducing the friction and wear of Si3N4/Ti3SiC2 contacts. [Li(urea]TFSI even produced better tribological properties than glycerol and L-F106 both at RT and 100°C. The SEM/EDS and XPS results reveal that the excellent tribological endurance of Si3N4/Ti3SiC2 contacts lubricated by lithium-based ILs was mainly attributed to the formation of surface protective films composed of various tribochemical products.

  3. Formation of thin DLC films on SiO{sub 2}/Si substrate using FCVAD technique

    Energy Technology Data Exchange (ETDEWEB)

    Bootkul, D. [Department of General Science, Faculty of Science, Srinakharinwirot University, Bangkok 10110 (Thailand); Thailand Centre of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Intarasiri, S., E-mail: saweat@gmail.com [Science and Technology Research Institute, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Centre of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Aramwit, C.; Tippawan, U. [Plasma and Beam Physics Research Facility (PBP), Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Yu, L.D. [Plasma and Beam Physics Research Facility (PBP), Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Centre of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand)

    2013-07-15

    Diamond-like carbon (DLC) films deposited on SiO{sub 2}/Si substrate are attractive for novel sensitive and selective chemical sensors. According to the almost never ending of size reduction, a nm-thickness layer of the film is greatly required. However, formation of such a very thin DLC film on SiO{sub 2}/Si substrate is challenging. In this experiment, DLC films were formed using our in-house Filtered Cathodic Vacuum Arc Deposition (FCVAD) facility by varying the bias voltage of 0 V, −250 V and −450 V with the arc voltage of 350 V, 450 V, 550 V, 650 V and 750 V for 10 min. Raman spectroscopy was applied for characterization of the film qualities and Transmission Electron Microscopy (TEM) was applied for cross sectional analysis. Results showed that films of thickness ranging from 10–50 nm were easily acquired depending on deposition conditions. Deconvolution of Raman spectra of these samples revealed that, when fixing the substrate bias but increasing the arc voltage from 350 to 750 V, the ratio between D-peak and G-peak intensity, namely I{sub D}/I{sub G} ratio, tended to reduce up to the arc voltage of 450 V, then increased up to the arc voltage of 650 V and finally decreased again. On the other hand, when fixing the arc voltage, the I{sub D}/I{sub G} ratio tended to decrease continuously as the increasing of bias voltage. It can be concluded that the bonding structure would evolve from a graphitic-like structure to a diamond-like structure as the substrate bias increases. Additionally, the sp{sup 3} site should be maximized at the arc voltage ∼450 V for fixed bias voltage. It is expected that, at −450 V bias and 450 V arc, sp{sup 3} fractions could be higher than 60%. However, in some cases, e.g. at low arc voltages, voids formed between the film and the amorphous SiO{sub 2} substrate. Electron energy loss spectroscopy (EELS) of the C edge across the DLC indicated that the thicker DLC film had uniform chemistry and structure, whereas the thin DLC

  4. Sensing performance of plasma-enhanced chemical vapor deposition SiC-SiO2-SiC horizontal slot waveguides

    NARCIS (Netherlands)

    Pandraud, G.; Margallo-Balbas, E.; Sarro, P.M.

    2012-01-01

    We have studied, for the first time, the sensing capabilities of plasma-enhanced chemical vapor deposition (PECVD) SiC-SiO2-SiC horizontal slot waveguides. Optical propagation losses were measured to be 23.9 dB?cm for the quasi-transverse magnetic mode. To assess the potential of this device as a

  5. Stability and Reactivity of Cyclometallated Naphthylamine Complexes in Pd-C Bond Insertion Reactions with Coordinated Alkynylphosphanes

    KAUST Repository

    Chen, Shuli

    2013-09-17

    Phenylbis(phenylethynyl)phosphane PhP(C≡CPh)2 coordinates regiospecifically to the α-methyl-chiral ortho-platinated and -palladated naphthylamine units at the positions trans to the nitrogen donors. The P→Pt coordination bond is kinetically inert, whereas the P→Pd bond is labile. Upon heating of these phosphane complexes at 70 °C, one of the C≡C bonds in the coordinated PhP(C≡CPh)2 was activated towards an intermolecular Pd-C bond insertion reaction with an external ortho-palladated naphthylamine ring. No intramolecular insertion reaction occurred. In contrast to its palladium analogue, the ortho-platinated ring is not reactive towards coordinated PhP(C≡CPh)2, although it can promote the Pd-C bond insertion reaction. However, despite the high kinetic stability of the P→Pt coordination, the organoplatinum unit is a noticeably weaker activator than its organopalladium counterpart. The chirality of the reacting ortho-metallated naphthylamine ligand exhibited high stereochemical influence on the formation of the new stereogenic phosphorus center during the course of these C-C bond-formation reactions. The coordination chemistry and the absolute stereochemistry of the dimetallic products were determined by single-crystal X-ray crystallographic analysis. The asymmetric monoinsertion of PhP(C≡CPh)2 coordinated to a cyclometallated N,N-dimethyl naphthyl/benzylamine template into the Pd-C bonds of N,N-dimethylnaphthylamine palladacycles has been demonstrated for the synthesis of a variety of new P-stereogenic homo- or heterodimetallic complexes. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  6. Importance of mother-infant communication for social bond formation in mammals.

    Science.gov (United States)

    Okabe, Shota; Nagasawa, Miho; Mogi, Kazutaka; Kikusui, Takefumi

    2012-06-01

    Mother-infant bonding is a universal relationship of all mammalian species. Here, we describe the role of reciprocal communication between mother and infant in the formation of bonding for several mammalian species. Mother-infant bond formation is reinforced by various social cues or stimuli, including communicative signals, such as odor and vocalizations, or tactile stimuli. The mother also develops cross-modal sensory recognition of the infant, during bond formation. Many studies have indicated that the oxytocin neural system plays a pivotal role in bond formation by the mother; however, the underlying neural mechanisms for infants have not yet been clarified. The comparative understanding of cognitive functions of mother and infants may help us understand the biological significance of mother-infant communication in mammalian species. © 2012 The Authors. Animal Science Journal © 2012 Japanese Society of Animal Science.

  7. Natural bond orbital analysis of molecular interactions: Theoretical study of W(CO)5 complexes with E(PH3)2 and NHEMe ligands (E=C, Si, Ge, Sn, Pb)

    International Nuclear Information System (INIS)

    Nguyen Thi Ai Nhung; Huynh Thi Phuong Loan; Duong Tuan Quang; Pham Van Tat

    2014-01-01

    The complexes with ligands carbodiphosphorane-analogues (called tetrylones) [(CO) 5 W-{E(PH 3 ) 2 }] (W5-EP 2 ) and N-heterocyclic carbene-analogues (called tetrylenes) [(CO) 5 W-{NHE Me }] (W5-NHE Me ) when E=C-Pb have been studied using natural bond orbital (NBO) method. The NBO analysis provides a consistent picture of the chemical bonding is two entire families of transition metal complexes of tetrylone and tetrylene ligands in term of donor-acceptor interactions, showing the correlation of these interactions with Wiberg bond indies (WBI), natural partial charges, and the energetically highest lying occupied molecular orbitals for σ and π orbitals of free ligands E(PH 3 ) 2 and NHE Me . Analysis of the bonding situation reveals that in E(PH 3 ) 2 and NHE Me ligands, the energy level of the π orbital rises, whereas that of the σ orbital decreases as atom E becomes heavier. The complexes with head-on-bonded ligands have (CO) 5 W←E donation which comes from the σ-lone-pair orbital of E(PH 3 ) 2 and NHE Me where E=C for tetrylones and E=C, Si, Ge for tetrylenes, whereas the (CO) 5 W←E donation in the side-on bonded complexes when E becomes heavier arises from the π-lone-pair orbital of E(PH 3 ) 2 and NHE Me ligands which is the HOMO of the free ligands. This makes the heavier adducts of tetrylones and tetrylenes become stronger donors than the lighter systems. The NBO analysis suggests that the E(PH 3 ) 2 ligands are strong σ-donors and strong π-acceptors while the NHE Me ligands are strong σ-donors and weak π-acceptors. This is possible for tetrylones that have two lone-pair orbitals available for donation, whereas the tetrylenes have only one lone-pair orbital available for donation. (author)

  8. Alkane Activation at Ambient Temperatures: Unusual Selectivities, C-C, C-H Bond Scission versus C-C Bond Coupling

    NARCIS (Netherlands)

    Trionfetti, C.; Agiral, A.; Gardeniers, Johannes G.E.; Lefferts, Leonardus; Seshan, Kulathuiyer

    2008-01-01

    Activating bonds: A cold plasma generated by dielectric barrier discharge in a microreactor converts alkanes (C1–C3) at atmospheric pressure. Large amounts of products with higher molecular weight than the starting hydrocarbons are observed showing that C-H activation at lower T favourably leads to

  9. Structural and electronic properties of Si/SiO2 MOS structures with aligned 3C-SiC nanocrystals in the oxide

    International Nuclear Information System (INIS)

    Pongracz, A.; Battistig, G.; Duecso, Cs.; Josepovits, K.V.; Deak, P.

    2007-01-01

    Our group previously proved that a simple reactive annealing in CO containing gas produces 3C-SiC nanocrystals, which are epitaxially and void-free aligned in the Si substrate. By a further thermal oxidation step, these nanocrystals can be lifted from the Si and incorporated into the SiO 2 matrix, thereby creating a promising structure for charge storage. In this work the structural and electrical properties of such systems with nanocrystalline SiC will be presented. Prototype MOS structures with 3C-SiC nanocrystals were produced for current-voltage and capacitance-voltage measurements. The results indicate that the high-temperature annealing did not damage the MOS structure, despite the fact that the CO annealing changed the electrical properties of the system. There was a positive charge accumulation and a reversible carrier injection observed in the structure. We assume that the positive charges originated from oxygen vacancies and the charge injection is related to the presence of SiC nanocrystals

  10. Growth of boron doped hydrogenated nanocrystalline cubic silicon carbide (3C-SiC) films by Hot Wire-CVD

    Energy Technology Data Exchange (ETDEWEB)

    Pawbake, Amit [School of Energy Studies, Savitribai Phule Pune University, Pune 411 007 (India); Tata Institute of Fundamental Research, Colaba, Mumbai 400 005 (India); Mayabadi, Azam; Waykar, Ravindra; Kulkarni, Rupali; Jadhavar, Ashok [School of Energy Studies, Savitribai Phule Pune University, Pune 411 007 (India); Waman, Vaishali [Modern College of Arts, Science and Commerce, Shivajinagar, Pune 411 005 (India); Parmar, Jayesh [Tata Institute of Fundamental Research, Colaba, Mumbai 400 005 (India); Bhattacharyya, Somnath [Department of Metallurgical and Materials Engineering, IIT Madras, Chennai 600 036 (India); Ma, Yuan‐Ron [Department of Physics, National Dong Hwa University, Hualien 97401, Taiwan (China); Devan, Rupesh; Pathan, Habib [Department of Physics, Savitribai Phule Pune University, Pune 411007 (India); Jadkar, Sandesh, E-mail: sandesh@physics.unipune.ac.in [Department of Physics, Savitribai Phule Pune University, Pune 411007 (India)

    2016-04-15

    Highlights: • Boron doped nc-3C-SiC films prepared by HW-CVD using SiH{sub 4}/CH{sub 4}/B{sub 2}H{sub 6}. • 3C-Si-C films have preferred orientation in (1 1 1) direction. • Introduction of boron into SiC matrix retard the crystallanity in the film structure. • Film large number of SiC nanocrystallites embedded in the a-Si matrix. • Band gap values, E{sub Tauc} and E{sub 04} (E{sub 04} > E{sub Tauc}) decreases with increase in B{sub 2}H{sub 6} flow rate. - Abstract: Boron doped nanocrystalline cubic silicon carbide (3C-SiC) films have been prepared by HW-CVD using silane (SiH{sub 4})/methane (CH{sub 4})/diborane (B{sub 2}H{sub 6}) gas mixture. The influence of boron doping on structural, optical, morphological and electrical properties have been investigated. The formation of 3C-SiC films have been confirmed by low angle XRD, Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), Fourier transform infra-red (FTIR) spectroscopy and high resolution-transmission electron microscopy (HR-TEM) analysis whereas effective boron doping in nc-3C-SiC have been confirmed by conductivity, charge carrier activation energy, and Hall measurements. Raman spectroscopy and HR-TEM analysis revealed that introduction of boron into the SiC matrix retards the crystallanity in the film structure. The field emission scanning electron microscopy (FE-SEM) and non contact atomic force microscopy (NC-AFM) results signify that 3C-SiC film contain well resolved, large number of silicon carbide (SiC) nanocrystallites embedded in the a-Si matrix having rms surface roughness ∼1.64 nm. Hydrogen content in doped films are found smaller than that of un-doped films. Optical band gap values, E{sub Tauc} and E{sub 04} decreases with increase in B{sub 2}H{sub 6} flow rate.

  11. High-efficient photo-electron transport channel in SiC constructed by depositing cocatalysts selectively on specific surface sites for visible-light H{sub 2} production

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Da; Peng, Yuan; Wang, Qi; Pan, Nanyan; Guo, Zhongnan; Yuan, Wenxia, E-mail: wxyuanwz@163.com [Department of Chemistry, School of Chemistry and Biological Engineering, University of Science and Technology Beijing, Beijing 100083 (China)

    2016-04-18

    Control cocatalyst location on a metal-free semiconductor to promote surface charge transfer for decreasing the electron-hole recombination is crucial for enhancing solar energy conversion. Based on the findings that some metals have an affinity for bonding with the specific atoms of polar semiconductors at a heterostructure interface, we herein control Pt deposition selectively on the Si sites of a micro-SiC photocatalyst surface via in-situ photo-depositing. The Pt-Si bond forming on the interface constructs an excellent channel, which is responsible for accelerating photo-electron transfer from SiC to Pt and then reducing water under visible-light. The hydrogen production is enhanced by two orders of magnitude higher than that of bare SiC, and 2.5 times higher than that of random-depositing nano-Pt with the same loading amount.

  12. Efficient C-O and C-N bond forming cross-coupling reactions catalyzed by core-shell structured Cu/Cu2O nanowires

    KAUST Repository

    Elshewy, Ahmed M.

    2013-12-01

    Oxygen and Nitrogen containing compounds are of utmost importance due to their interesting and diverse biological activities. The construction of the C-O and C–N bonds is of significance as it opens avenues for the introduction of ether and amine linkages in organic molecules. Despite significant advancements in this field, the construction of C-O and C–N bonds is still a major challenge for organic chemists, due to the involvement of harsh reaction conditions or the use of expensive catalysts or ligands in many cases. Thus, it is a challenge to develop alternative, milder, cheaper and more reproducible methodologies for the construction of these types of bonds. Herein, we introduce a new efficient ligand free catalytic system for C-O and C-N bond formation reactions.

  13. Grafted SiC nanocrystals

    DEFF Research Database (Denmark)

    Saini, Isha; Sharma, Annu; Dhiman, Rajnish

    2017-01-01

    ), raman spectroscopy and X-ray diffraction (XRD) measurements. UV–Visible absorption spectroscopy was used to study optical properties such as optical energy gap (Eg), Urbach's energy (Eu), refractive index (n), real (ε1) and imaginary (ε2) parts of dielectric constant of PVA as well as PVA......Polyvinyl alcohol (PVA) grafted SiC (PVA-g-SiC)/PVA nanocomposite was synthesized by incorporating PVA grafted silicon carbide (SiC) nanocrystals inside PVA matrix. In-depth structural characterization of resulting nanocomposite was carried out using fourier transform infrared spectroscopy (FTIR...

  14. Formation of porous surface layers in reaction bonded silicon nitride during processing

    Science.gov (United States)

    Shaw, N. J.; Glasgow, T. K.

    1979-01-01

    Microstructural examination of reaction bonded silicon nitride (RBSN) has shown that there is often a region adjacent to the as-nitrided surfaces that is even more porous than the interior of this already quite porous material. Because this layer of large porosity is considered detrimental to both the strength and oxidation resistance of RBSN, a study was undertaken to determine if its formation could be prevented during processing. All test bars studied were made from a single batch of Si powder which was milled for 4 hours in heptane in a vibratory mill using high density alumina cylinders as the grinding media. After air drying the powder, bars were compacted in a single acting die and hydropressed.

  15. Photoemission Studies of Si Quantum Dots with Ge Core: Dots formation, Intermixing at Si-clad/Ge-core interface and Quantum Confinement Effect

    Directory of Open Access Journals (Sweden)

    Yudi Darma

    2008-03-01

    Full Text Available Spherical Si nanocrystallites with Ge core (~20nm in average dot diameter have been prepared by controlling selective growth conditions of low-pressure chemical vapor deposition (LPCVD on ultrathin SiO2 using alternately pure SiH4 and 5% GeH4 diluted with He. XPS results confirm the highly selective growth of Ge on the pregrown Si dots and subsequently complete coverage by Si selective growth on Ge/Si dots. Compositional mixing and the crystallinity of Si dots with Ge core as a function of annealing temperature in the range of 550-800oC has been evaluated by XPS analysis and confirms the diffusion of Ge atoms from Ge core towards the Si clad accompanied by formation of GeOx at the Si clad surface. The first subband energy at the valence band of Si dot with Ge core has been measured as an energy shift at the top of the valence band density of state using XPS. The systematic shift of the valence band maximum towards higher binding energy with progressive deposition in the dot formation indicate the charging effect of dots and SiO2 layer by photoemission during measurements.

  16. Studies on SiC(p) reinforced Al-Al sub 3 Ni eutectic matrix composites

    International Nuclear Information System (INIS)

    Masrom, A.K.; Foo, L.C.; Ismail, A.B.

    1996-01-01

    An investigation on processing of Al-5.69wt% Ni eutectic with SiC particulate composites is reported. The intermetallic composites are prepared by elemental powder metallurgy route and sintered at two different temperatures, i.e., 600 degree C and 620 degree C. Results show that the metal matrix was Al-Al sub 3 Ni eutectic. The phase analysis by XRD identified the presence of Al sub 3 Ni and Al as dominant phases together with silicon and Al sub 4 C sub 3 phase as minor phases. The Al sub 4 C sub 3 and Si phases are formed during sintering due to SiC-Al interface reaction. SEM micrographs also reveal the formation of microvoid surrounding the SiC particle

  17. Formation and Characterization of Silver Nanoparticle Composite with Poly(p-Br/F-phenylsilane).

    Science.gov (United States)

    Roh, Sung-Hee; Noh, Ji Eun; Woo, Hee-Gweon; Cho, Myong-Shik; Sohn, Honglae

    2015-02-01

    The one-pot production and structural characterization of composites of silver nanoparticles with poly(p-Br/F-phenylsilane), Br/F-PPS, have been performed. The conversion of Ag+ ions to stable Ag0 nanoparticles is mediated by the copolymer Br/F-PPS having both possibly reactive Si-H bonds in the polymer backbone and C-Br bonds in the substituents along with relatively inert C-F bonds. Transmission electron microscopy and field emission scanning electron microscopy analyses show the formation of the composites where silver nanoparticles (less than 30 nm of size) are well dispersed over the Br/F-PPS matrix. X-ray diffraction patterns are consistent with that for face-centered-cubic typed silver. The polymer solubility in toluene implys that the cleavage of C-Br bond and the Si-F dative bonding may not be occurred appreciably at ambient temperature. Nonetheless, thermogravimetric analysis data suggest that some sort of cross-linking could take place at high temperature. Most of the silver particles undergo macroscopic aggregation without Br/F-PPS, which indicates that the polysilane is necessary for stabilizing the silver nanoparticles.

  18. Modeling of the Signal Formation in SiC Sensors for Measurements of the Radiation Spectrum in Nuclear Energy

    International Nuclear Information System (INIS)

    Krolikowski, Igor P.

    2013-06-01

    The modeling methodology of the signal formation in SiC sensors is presented. The modeling uses two approaches: the first one is the integrated approach whereas the second is the analytical approach. The sensor response is obtained from both approaches: this is the usual solution of the forward problem. Moreover, the response function of the sensor is evaluated by means of the analytical approach and it can be used to solve the inverse problem: recovering the primary radiation spectrum using the response of the sensor. Additionally, the response function returns information about the signal formation in the sensor such as the shape of the response formed by particles with a specific energy. Results obtained by simulations are then compared with experimental data. (authors)

  19. Interfacial reaction in SiC_f/Ti-6Al-4V composite by using transmission electron microscopy

    International Nuclear Information System (INIS)

    Huang, Bin; Li, Maohua; Chen, Yanxia; Luo, Xian; Yang, Yanqing

    2015-01-01

    The interfacial reactions of continuous SiC fiber reinforced Ti-6Al-4V matrix composite (SiC_f/Ti-6Al-4V composite) and continuous SiC fiber coated by C reinforced Ti-6Al-4V matrix composite (SiC_f/C/Ti-6Al-4V composite) were investigated by using micro-beam electron diffraction (MBED) and energy disperse spectroscopy (EDS) on transmission electron microscopy (TEM). The sequence of the interfacial reactions in the as-processed and exposed at 900°C for 50h SiC_f/Ti-6Al-4V composites can be described as SiC||TiC||Ti_5Si_3 + TiC||Ti-6Al-4V and SiC||TiC||Ti_5Si_3||TiC||Ti_5Si_3||TiC||Ti_5Si_3||Ti-6Al-4V, respectively. Additionally, both in as-processed and exposed composites, Ti_3SiC_2 and Ti_3Si are absent at the interfaces. For the SiC_f/C/Ti-6Al-4V composite exposed at 900 °C for 50 h, the sequence of the interfacial reaction can be described as SiC||C||TiC_F||TiC_C||Ti-6Al-4V before C coating is completely consumed by interfacial reaction. When interfacial reaction consumes C coating completely, the sequence of the interfacial reaction can be described as SiC||TiC||Ti_5Si_3||TiC||Ti-6Al-4V. Furthermore, in SiC_f/C/Ti-6Al-4V composite, C coating can absolutely prevent Si diffusion from SiC fiber to matrix. Basing on these results, the model of formation process of the interfacial reaction products in the composites was proposed. - Highlights: • We obtained the sequence of the interfacial reactions in the as-processed and exposed at 900 °C for 50 h SiC_f/Ti-6Al-4 V composites as well as in the SiC_f/C/Ti-6Al-4 V composite exposed at 900 °C for 50 h. • We verified that both in as-processed and exposed SiC_f/Ti-6Al-4 V composites, Ti_3SiC_2 and Ti_3Si are absent at the interfaces. • Carbon coating can absolutely prevent silicon diffusion from SiC fiber to matrix. • Basing on these results, the model of formation process of the interfacial reaction products in the composites was proposed.

  20. Characterization of SiCf/SiC and CNT/SiC composite materials produced by liquid phase sintering

    International Nuclear Information System (INIS)

    Lee, J.K.; Lee, S.P.; Cho, K.S.; Byun, J.H.; Bae, D.S.

    2011-01-01

    This paper dealt with the microstructure and mechanical properties of SiC based composites reinforced with different reinforcing materials. The composites were fabricated using reinforcing materials of carbon nanotubes (CNT) and Tyranno Lox-M SiC chopped fibers. The volume fraction of carbon nanotubes was also varied in this composite system. An Al 2 O 3 -Y 2 O 3 powder mixture was used as a sintering additive in the consolidation of the SiC matrix. The characterization of the composites was investigated by means of SEM and three point bending tests. These composites showed a dense morphology of the matrix region, by the creation of a secondary phase. The composites reinforced with SiC chopped fibers possessed a flexural strength of about 400 MPa at room temperature. The flexural strength of the carbon nanotubes composites had a tendency to decrease with increased volume fraction of the reinforcing material.