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Sample records for buried tunnel junction

  1. InGaN based micro light emitting diodes featuring a buried GaN tunnel junction

    Energy Technology Data Exchange (ETDEWEB)

    Malinverni, M., E-mail: marco.malinverni@epfl.ch; Martin, D.; Grandjean, N. [ICMP, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne (Switzerland)

    2015-08-03

    GaN tunnel junctions (TJs) are grown by ammonia molecular beam epitaxy. High doping levels are achieved with a net acceptor concentration close to ∼10{sup 20 }cm{sup −3}, thanks to the low growth temperature. This allows for the realization of p-n junctions with ultrathin depletion width enabling efficient interband tunneling. n-p-n structures featuring such a TJ exhibit low leakage current densities, e.g., <5 × 10{sup −5} A cm{sup −2} at reverse bias of 10 V. Under forward bias, the voltage is 3.3 V and 4.8 V for current densities of 20 A cm{sup −2} and 2000 A cm{sup −2}, respectively. The specific series resistance of the whole device is 3.7 × 10{sup −4} Ω cm{sup 2}. Then micro-light emitting diodes (μ-LEDs) featuring buried TJs are fabricated. Excellent current confinement is demonstrated together with homogeneous electrical injection, as seen on electroluminescence mapping. Finally, the I-V characteristics of μ-LEDs with various diameters point out the role of the access resistance at the current aperture edge.

  2. InGaN based micro light emitting diodes featuring a buried GaN tunnel junction

    International Nuclear Information System (INIS)

    GaN tunnel junctions (TJs) are grown by ammonia molecular beam epitaxy. High doping levels are achieved with a net acceptor concentration close to ∼1020 cm−3, thanks to the low growth temperature. This allows for the realization of p-n junctions with ultrathin depletion width enabling efficient interband tunneling. n-p-n structures featuring such a TJ exhibit low leakage current densities, e.g., <5 × 10−5 A cm−2 at reverse bias of 10 V. Under forward bias, the voltage is 3.3 V and 4.8 V for current densities of 20 A cm−2 and 2000 A cm−2, respectively. The specific series resistance of the whole device is 3.7 × 10−4 Ω cm2. Then micro-light emitting diodes (μ-LEDs) featuring buried TJs are fabricated. Excellent current confinement is demonstrated together with homogeneous electrical injection, as seen on electroluminescence mapping. Finally, the I-V characteristics of μ-LEDs with various diameters point out the role of the access resistance at the current aperture edge

  3. InGaN based micro light emitting diodes featuring a buried GaN tunnel junction

    Science.gov (United States)

    Malinverni, M.; Martin, D.; Grandjean, N.

    2015-08-01

    GaN tunnel junctions (TJs) are grown by ammonia molecular beam epitaxy. High doping levels are achieved with a net acceptor concentration close to ˜1020 cm-3, thanks to the low growth temperature. This allows for the realization of p-n junctions with ultrathin depletion width enabling efficient interband tunneling. n-p-n structures featuring such a TJ exhibit low leakage current densities, e.g., <5 × 10-5 A cm-2 at reverse bias of 10 V. Under forward bias, the voltage is 3.3 V and 4.8 V for current densities of 20 A cm-2 and 2000 A cm-2, respectively. The specific series resistance of the whole device is 3.7 × 10-4 Ω cm2. Then micro-light emitting diodes (μ-LEDs) featuring buried TJs are fabricated. Excellent current confinement is demonstrated together with homogeneous electrical injection, as seen on electroluminescence mapping. Finally, the I-V characteristics of μ-LEDs with various diameters point out the role of the access resistance at the current aperture edge.

  4. Magnetic tunnel junctions (MTJs)

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    We review the giant tunnel magnetoresistance (TMR) in ferromagnetic-insulator-ferromagnetic junctions discovered in recent years, which is the magnetoresistance (MR) associated with the spin-dependent tunneling between two ferromagnetic metal films separated by an insulating thin tunnel barrier. The theoretical and experimental results including junction conductance, magnetoresistance and their temperature and bias dependences are described.

  5. Confocal Annular Josephson Tunnel Junctions

    Science.gov (United States)

    Monaco, Roberto

    2016-04-01

    The physics of Josephson tunnel junctions drastically depends on their geometrical configurations and here we show that also tiny geometrical details play a determinant role. More specifically, we develop the theory of short and long annular Josephson tunnel junctions delimited by two confocal ellipses. The behavior of a circular annular Josephson tunnel junction is then seen to be simply a special case of the above result. For junctions having a normalized perimeter less than one, the threshold curves in the presence of an in-plane magnetic field of arbitrary orientations are derived and computed even in the case with trapped Josephson vortices. For longer junctions, a numerical analysis is carried out after the derivation of the appropriate motion equation for the Josephson phase. We found that the system is modeled by a modified and perturbed sine-Gordon equation with a space-dependent effective Josephson penetration length inversely proportional to the local junction width. Both the fluxon statics and dynamics are deeply affected by the non-uniform annulus width. Static zero-field multiple-fluxon solutions exist even in the presence of a large bias current. The tangential velocity of a traveling fluxon is not determined by the balance between the driving and drag forces due to the dissipative losses. Furthermore, the fluxon motion is characterized by a strong radial inward acceleration which causes electromagnetic radiation concentrated at the ellipse equatorial points.

  6. Confocal Annular Josephson Tunnel Junctions

    Science.gov (United States)

    Monaco, Roberto

    2016-09-01

    The physics of Josephson tunnel junctions drastically depends on their geometrical configurations and here we show that also tiny geometrical details play a determinant role. More specifically, we develop the theory of short and long annular Josephson tunnel junctions delimited by two confocal ellipses. The behavior of a circular annular Josephson tunnel junction is then seen to be simply a special case of the above result. For junctions having a normalized perimeter less than one, the threshold curves in the presence of an in-plane magnetic field of arbitrary orientations are derived and computed even in the case with trapped Josephson vortices. For longer junctions, a numerical analysis is carried out after the derivation of the appropriate motion equation for the Josephson phase. We found that the system is modeled by a modified and perturbed sine-Gordon equation with a space-dependent effective Josephson penetration length inversely proportional to the local junction width. Both the fluxon statics and dynamics are deeply affected by the non-uniform annulus width. Static zero-field multiple-fluxon solutions exist even in the presence of a large bias current. The tangential velocity of a traveling fluxon is not determined by the balance between the driving and drag forces due to the dissipative losses. Furthermore, the fluxon motion is characterized by a strong radial inward acceleration which causes electromagnetic radiation concentrated at the ellipse equatorial points.

  7. Josephson tunnel junction microwave attenuator

    DEFF Research Database (Denmark)

    Koshelets, V. P.; Shitov, S. V.; Shchukin, A. V.;

    1993-01-01

    A new element for superconducting electronic circuitry-a variable attenuator-has been proposed, designed, and successfully tested. The principle of operation is based on the change in the microwave impedance of a superconductor-insulator-superconductor (SIS) Josephson tunnel junction when dc biased...

  8. Palladium Electrodes for Molecular Tunnel Junctions

    OpenAIRE

    Chang, Shuai; Sen, Suman; Zhang, Peiming; Gyarfas, Brett; Ashcroft, Brian; Lefkowitz, Steven; Peng, Hongbo; Lindsay, Stuart

    2012-01-01

    Gold has been the metal of choice for research on molecular tunneling junctions, but it is incompatible with CMOS fabrication because it forms deep level traps in silicon. Palladium electrodes do not contaminate silicon, and also give higher tunnel current signals in the molecular tunnel junctions we have studied. The result is cleaner signals in a recognition-tunneling junction that recognizes the four natural DNA bases as well as 5-methyl cytosine, with no spurious background signals. More ...

  9. Macroscopic quantum tunneling in Josephson tunnel junctions and Coulomb blockade in single small tunnel junctions

    International Nuclear Information System (INIS)

    Experiments investigating the process of macroscopic quantum tunneling in a moderately-damped, resistively shunted, Josephson junction are described, followed by a discussion of experiments performed on very small capacitance normal-metal tunnel junctions. The experiments on the resistively-shunted Josephson junction were designed to investigate a quantum process, that of the tunneling of the Josephson phase variable under a potential barrier, in a system in which dissipation plays a major role in the dynamics of motion. All the parameters of the junction were measured using the classical phenomena of thermal activation and resonant activation. Theoretical predictions are compared with the experimental results, showing good agreement with no adjustable parameters; the tunneling rate in the moderately damped (Q ∼ 1) junction is seen to be reduced by a factor of 300 from that predicted for an undamped junction. The phase is seen to be a good quantum-mechanical variable. The experiments on small capacitance tunnel junctions extend the measurements on the larger-area Josephson junctions from the region in which the phase variable has a fairly well-defined value, i.e. its wavefunction has a narrow width, to the region where its value is almost completely unknown. The charge on the junction becomes well-defined and is predicted to quantize the current through the junction, giving rise to the Coulomb blockade at low bias. I present the first clear observation of the Coulomb blockade in single junctions. The electrical environment of the tunnel junction, however, strongly affects the behavior of the junction: higher resistance leads are observed to greatly sharpen the Coulomb blockade over that seen with lower resistance leads. I present theoretical descriptions of how the environment influences the junctions; comparisons with the experimental results are in reasonable agreement

  10. Electronic thermometry in tunable tunnel junction

    Energy Technology Data Exchange (ETDEWEB)

    Maksymovych, Petro

    2016-03-15

    A tunable tunnel junction thermometry circuit includes a variable width tunnel junction between a test object and a probe. The junction width is varied and a change in thermovoltage across the junction with respect to the change in distance across the junction is determined. Also, a change in biased current with respect to a change in distance across the junction is determined. A temperature gradient across the junction is determined based on a mathematical relationship between the temperature gradient, the change in thermovoltage with respect to distance and the change in biased current with respect to distance. Thermovoltage may be measured by nullifying a thermoelectric tunneling current with an applied voltage supply level. A piezoelectric actuator may modulate the probe, and thus the junction width, to vary thermovoltage and biased current across the junction. Lock-in amplifiers measure the derivatives of the thermovoltage and biased current modulated by varying junction width.

  11. Shot Noise in Magnetic Tunnel Junctions: Evidence for Sequential Tunneling

    OpenAIRE

    Guerrero, R.; Aliev, F. G.; Tserkovnyak, Y.; Santos, T. S.; Moodera, J.S.

    2006-01-01

    We report the experimental observation of sub-Poissonian shot noise in single magnetic tunnel junctions, indicating the importance of tunneling via impurity levels inside the tunnel barrier. For junctions with weak zero-bias anomaly in conductance, the Fano factor (normalized shot noise) depends on the magnetic configuration being enhanced for antiparallel alignment of the ferromagnetic electrodes. We propose a model of sequential tunneling through nonmagnetic and paramagnetic impurity levels...

  12. Tunnel magnetoresistance in alumina, magnesia and composite tunnel barrier magnetic tunnel junctions

    OpenAIRE

    Schebaum, Oliver; Drewello, Volker; Auge, Alexander; Reiss, Günter; Münzenberg, Markus; Schuhmann, Henning; Seibt, Michael; Thomas, Andy

    2010-01-01

    Using magnetron sputtering, we have prepared Co-Fe-B/tunnel barrier/Co-Fe-B magnetic tunnel junctions with tunnel barriers consisting of alumina, magnesia, and magnesia-alumina bilayer systems. The highest tunnel magnetoresistance ratios we found were 73% for alumina and 323% for magnesia-based tunnel junctions. Additionally, tunnel junctions with a unified layer stack were prepared for the three different barriers. In these systems, the tunnel magnetoresistance ratios at optimum annealing te...

  13. Palladium electrodes for molecular tunnel junctions.

    Science.gov (United States)

    Chang, Shuai; Sen, Suman; Zhang, Peiming; Gyarfas, Brett; Ashcroft, Brian; Lefkowitz, Steven; Peng, Hongbo; Lindsay, Stuart

    2012-10-26

    Gold has been the metal of choice for research on molecular tunneling junctions, but it is incompatible with complementary metal-oxide-semiconductor fabrication because it forms deep level traps in silicon. Palladium electrodes do not contaminate silicon, and also give higher tunnel current signals in the molecular tunnel junctions that we have studied. The result is cleaner signals in a recognition-tunneling junction that recognizes the four natural DNA bases as well as 5-methyl cytosine, with no spurious background signals. More than 75% of all the recorded signal peaks indicate the base correctly. PMID:23037952

  14. Palladium electrodes for molecular tunnel junctions

    International Nuclear Information System (INIS)

    Gold has been the metal of choice for research on molecular tunneling junctions, but it is incompatible with complementary metal–oxide–semiconductor fabrication because it forms deep level traps in silicon. Palladium electrodes do not contaminate silicon, and also give higher tunnel current signals in the molecular tunnel junctions that we have studied. The result is cleaner signals in a recognition-tunneling junction that recognizes the four natural DNA bases as well as 5-methyl cytosine, with no spurious background signals. More than 75% of all the recorded signal peaks indicate the base correctly. (paper)

  15. delta-biased Josephson tunnel junctions

    DEFF Research Database (Denmark)

    Monaco, R.; Mygind, Jesper; Koshelet, V.;

    2010-01-01

    Abstract: The behavior of a long Josephson tunnel junction drastically depends on the distribution of the dc bias current. We investigate the case in which the bias current is fed in the central point of a one-dimensional junction. Such junction configuration has been recently used to detect the...

  16. Soliton excitations in Josephson tunnel junctions

    DEFF Research Database (Denmark)

    Lomdahl, P. S.; Sørensen, O. H.; Christiansen, Peter Leth

    1982-01-01

    A detailed numerical study of a sine-Gordon model of the Josephson tunnel junction is compared with experimental measurements on junctions with different L / λJ ratios. The soliton picture is found to apply well on both relatively long (L / λJ=6) and intermediate (L / λJ=2) junctions. We find good...

  17. Parameter Extraction of Rate Equations for Buried Tunnel Junction Vertical-cavity Surface-emitting Lasers%掩埋隧道结垂直面激光器速率方程参量提取

    Institute of Scientific and Technical Information of China (English)

    彭金花; 吴东升; 徐荃; 平兰兰

    2013-01-01

    In order to design and optimize high frequency performances of laser diodes, accurate extraction methods for the rate equation parameters are very important. A method for the rate equation parameter extraction for long-wavelength and high-bandwidth buried tunnel junction vertical-cavity surface-emitting lasers is presented. This method bases on the threshold current, output power, resonance frequency, damping factor and nonlinear effect of the gain compression factor under high bias currents. By fitting the chip frequency responses with different bias currents, resonance frequency and damping factor values can be obtained. Finally, by considering gain compression factor and nonlinear fitting resonance frequency and damping factor values under different currents, parameters of rate equation model can be extracted.%为了设计和优化高速激光二极管的高频特性,其速率方程模型参量的精确提取方法非常重要.本文针对新型长波长高带宽的掩埋隧道结垂直面激光器,给出一种速率方程模型参量提取方法.此方法是主要基于阈值电流、输出光功率、张弛振荡频率、阻尼因子和高偏置下增益压缩因子非线性效应等因素,根据已测量的不同偏置下芯片的小信号频率响应来拟合出方程中的张弛振荡频率和阻尼因子.通过考虑增益压缩因子,分别非线性拟合已提取的偏置光功率下的张弛振荡频率和阻尼因子,即可提取速率方程模型中的参量.

  18. Measuring quantum systems with tunnel junctions

    International Nuclear Information System (INIS)

    Full text: We present a formalism that allows to describe a quantum system modulating the transmission of a tunnel junction. The tunnel junction acts as an environment for the quantum system. Contrary to the conventional approach to open quantum systems we retain a degree of freedom of the environment, the charge passed through the junction, after averaging over the bath degrees of freedom, employing a projection operator technique. The resulting object characterizing the joint dynamics of the system and the charge is the charge specific density matrix. We derive a master equation describing the time evolution of the charge specific density matrix. We consider two examples of quantum systems coupled to the junction: a spin and a harmonic oscillator. In the spin case we are able to analyze a quantum measurement process in detail. For the oscillator we investigate the noise in the tunnel junction induced by the coupling. (author)

  19. Characterization of magnetic tunnel junction test pads

    DEFF Research Database (Denmark)

    Østerberg, Frederik Westergaard; Kjær, Daniel; Nielsen, Peter Folmer;

    2015-01-01

    We show experimentally as well as theoretically that patterned magnetic tunnel junctions can be characterized using the current-in-plane tunneling (CIPT) method, and the key parameters, the resistance-area product (RA) and the tunnel magnetoresistance (TMR), can be determined. The CIPT method...... square tunnel junction pads with varying sizes and analyze the measured data using both the original and the modified CIPT model. Thus, we determine in which sample size range the modified CIPT model is needed to ensure validity of the extracted sample parameters, RA and TMR. In addition, measurements as...... a function of position on a square tunnel junction pad are used to investigate the sensitivity of the measurement results to probe misalignment....

  20. Modelling of Dual-Junction Solar Cells including Tunnel Junction

    Directory of Open Access Journals (Sweden)

    Abdelaziz Amine

    2013-01-01

    Full Text Available Monolithically stacked multijunction solar cells based on III–V semiconductors materials are the state-of-art of approach for high efficiency photovoltaic energy conversion, in particular for space applications. The individual subcells of the multi-junction structure are interconnected via tunnel diodes which must be optically transparent and connect the component cells with a minimum electrical resistance. The quality of these diodes determines the output performance of the solar cell. The purpose of this work is to contribute to the investigation of the tunnel electrical resistance of such a multi-junction cell through the analysis of the current-voltage (J-V characteristics under illumination. Our approach is based on an equivalent circuit model of a diode for each subcell. We examine the effect of tunnel resistance on the performance of a multi-junction cell using minimization of the least squares technique.

  1. Particle detection with superconducting tunnel junctions

    International Nuclear Information System (INIS)

    At the Institute of Experimental Nuclear Physics of the University of Karlsruhe (TH) and at the Institute for Nuclear Physics of the Kernforschungszentrum Karlsruhe we started to produce superconducting tunnel junctions and to investigate them for their suitability as particle detectors. The required facilities for the production of tunnel junctions and the experimental equipments to carry out experiments with them were erected. Experiments are presented in which radiations of different kinds of particles could successfully be measured with the tunnel junctions produced. At first we succeeded in detectioning light pulses of a laser. In experiments with alpha-particles of an energy of 4,6 MeV the alpha-particles were detected with an energy resolution of 1,1%, and it was shown in specific experiments that the phonons originating from the deposition of energy by an alpha-particle in the substrate can be detected with superconducting tunnel junctions at the surface. On that occasion it turned out that the signals could be separated with respect to their point of origin (tunnel junction, contact leads, substrate). Finally X-rays with an energy of 6 keV were detected with an energy resolution of 8% in a test arrangement that makes use of the so-called trapping effect to read out a larger absorber volume. (orig.)

  2. Graphene-based magnetic tunnel junctions

    Science.gov (United States)

    Cobas, Enrique

    2013-03-01

    Graphene's in-plane transport has been widely researched and has yielded extraordinary carrier mobilities of 105 cm2/Vs and spin diffusion lengths of exceeding 100 μm. These properties bode well for graphene in future electronics and spintronics technologies. Its out-of-plane transport has been far less studied, although its parent material, graphite, shows a large conductance anisotropy. Recent calculations show graphene's interaction with close-packed ferromagnetic metal surfaces should produce highly spin-polarized transport out-of-plane, an enabling breakthrough for spintronics technology. In this work, we fabricate and measure FM/graphene/FM magnetic tunnel junctions using CVD-grown single-layer graphene. The resulting juctions show non-linear current-voltage characteristics and a very weak temperature dependence consistent with charge tunneling transport. Furthermore, we study spin transport across the junction as a function of bias voltage and temperature. The tunneling magnetoresistance (TMR) peaks at two percent for single-layer graphene junctions and exhibits the expected bias asymmetry and a temperature dependence that fits well with established spin-polarized tunneling models. Results of mutli-layer graphene tunnel junctions will also be discussed.

  3. δ-biased Josephson tunnel junctions

    International Nuclear Information System (INIS)

    The behavior of a long Josephson tunnel junction drastically depends on the distribution of the dc bias current. We investigate the case in which the bias current is fed in the central point of a one-dimensional junction. Such junction configuration has been recently used to detect the persistent currents circulating in a superconducting loop. Analytical and numerical results indicate that the presence of fractional vortices leads to remarkable differences from the conventional case of uniformly distributed dc bias current. The theoretical findings are supported by detailed measurements on a number of δ-biased samples having different electrical and geometrical parameters.

  4. Microscopic tunneling theory of long Josephson junctions

    DEFF Research Database (Denmark)

    Grønbech-Jensen, N.; Hattel, Søren A.; Samuelsen, Mogens Rugholm

    1992-01-01

    We present a numerical scheme for solving a nonlinear partial integro-differential equation with nonlocal time dependence. The equation describes the dynamics in a long Josephson junction modeled by use of the microscopic theory for tunneling between superconductors. We demonstrate that the...

  5. NbN tunnel junctions

    International Nuclear Information System (INIS)

    All-niobium nitride Josephon junctions have been prepared successfully using a new processing called SNOP: Selective Niobium (nitride) Overlap Process. Such a process involves the ''trilayer'' deposition on the whole wafer before selective patterning of the electrodes by optically controlled dry reactive ion etching. Only two photomask levels are need to define an ''overlap'' or a ''cross-type'' junction with a good accuracy. The properties of the niobium nitride films deposited by DC-magnetron sputtering and the surface oxide growth are analysed. The most critical point to obtain high quality and high gap value junctions resides in the early stage of the NbN counterelectrode growth. Some possibilities to overcome such a handicap exist even if the fabrication needs substrate temperatures below 2500C

  6. Josephson tunnel junctions in niobium films

    International Nuclear Information System (INIS)

    A method of fabricating stable Josephson tunnel junctions with reproducible characteristics is described. The junctions have a sandwich structure consisting of a vacuum evaporated niobium film, a niobium oxide layer produced by the glow discharge method and a lead film deposited by vacuum evaporation. Difficulties in producing thin-film Josephson junctions are discussed. Experimental results suggest that the lower critical field of the niobium film is the most essential parameter when evaluating the quality of these junctions. The dependence of the lower critical field on the film thickness and on the Ginzburg-Landau parameter of the film is studied analytically. Comparison with the properties of the evaporated films and with the previous calculations for bulk specimens shows that the presented model is applicable for most of the prepared samples. (author)

  7. Modelling of Dual-Junction Solar Cells including Tunnel Junction

    OpenAIRE

    Abdelaziz Amine; Yamina Mir; Mimoun Zazoui

    2013-01-01

    Monolithically stacked multijunction solar cells based on III–V semiconductors materials are the state-of-art of approach for high efficiency photovoltaic energy conversion, in particular for space applications. The individual subcells of the multi-junction structure are interconnected via tunnel diodes which must be optically transparent and connect the component cells with a minimum electrical resistance. The quality of these diodes determines the output performance of the solar cell. The p...

  8. Imaging of buried phosphorus nanostructures in silicon using scanning tunneling microscopy

    OpenAIRE

    Oberbeck, L.; Reusch, T. C. G.; Hallam, T.; Schofield, S.R.; Curson, N. J.; Simmons, M. Y.

    2014-01-01

    We demonstrate the locating and imaging of single phosphorus atoms and phosphorus dopant nanostructures, buried beneath the Si(001) surface using scanning tunneling microscopy. The buried dopant nanostructures have been fabricated in a bottom-up approach using scanning tunneling microscope lithography on Si(001). We find that current imaging tunneling spectroscopy is suited to locate and image buried nanostructures at room temperature and with residual surface roughness present. From these st...

  9. Josephson tunnel junctions with ferromagnetic barrier layer

    International Nuclear Information System (INIS)

    We have fabricated Nb/Al2O3/Ni0.6Cu0.4/Nb Josephson tunnel junctions. Depending on the thickness of the ferromagnetic Ni0.6Cu0.4 layer and on the ambient temperature, the junctions were in the 0 or π coupled ground state. The Al2O3 tunnel barrier allows to achieve rather low damping. The critical current density in the π state was up to 5 A/cm2 at T=2.1 K, resulting in a Josephson penetration depth λJ as low as 160 μm. Experimentally determined junction parameters are well described by theory taking into account spin-flip scattering in the Ni0.6Cu0.4 layer and different interface transparencies. Using a ferromagnetic layer with a step-like thickness we obtain a 0-π junction with equal lengths and critical currents of 0 and π parts. The Ic(H) pattern shows a clear minimum in the vicinity of zero field. The ground state of our 330 μm (1.3λJ) long junction corresponds to a spontaneous vortex of supercurrent pinned at the 0-π phase boundary, carrying ∝ 6.7% of the magnetic flux quantum Φ0. (orig.)

  10. Tunnel magnetoresistance of an organic molecule junction

    International Nuclear Information System (INIS)

    Coherent spin-dependent electronic transport is investigated in a molecular junction based on oligophenylene attached to two the semi-infinite ferromagnetic (FM) electrodes with finite cross sections. The work is based on the tight-binding Hamiltonian model and within the framework of a non-equilibrium Green's function (NEGF) technique. It is shown that tunnel magnetoresistance (TMR) of molecular junction can be large (over 60 %) by adjusting the related parameters, and depends on: (i) the applied voltages and (ii) the length of oligophenylele molecule.

  11. Josephson tunnel junctions with ferromagnetic interlayer

    International Nuclear Information System (INIS)

    Superconductivity and ferromagnetism are well-known physical properties of solid states that have been widely studied and long thought about as antagonistic phenomena due to difference in spin ordering. It turns out that the combination of both superconductor and ferromagnet leads to a very rich and interesting physics. One particular example, the phase oscillations of the superconducting order parameter inside the ferromagnet, will play a major role for the devices discussed in this work. In this thesis, I present Josephson junctions with a thin Al2O3 tunnel barrier and a ferromagnetic interlayer, i.e. superconductor-insulator-ferromagnet-superconductor (SIFS) stacks. The fabrication of junctions was optimized regarding the insulation of electrodes and the homogeneity of the current transport. The junctions were either in the 0 or π coupled ground state, depending on the thickness of the ferromagnetic layer and on temperature. The influence of ferromagnetic layer thickness on the transport properties and the coupling (0, π) of SIFS tunnel junctions was studied. Furthermore, using a stepped ferromagnetic layer with well-chosen thicknesses, I obtained the so-called 0-π Josephson junction. At a certain temperature this 0-π junction can be made perfectly symmetric. In this case the ground state corresponds to a vortex of supercurrent creating a magnetic flux which is a fraction of the magnetic flux quantum Φ0. Such structures allow to study the physics of fractional vortices and to build various electronic circuits based on them. The SIFS junctions presented here have an exponentially vanishing damping at T → 0. The SIFS technology developed within the framework of this work may be used to construct classical and quantum devices such as oscillators, memory cells and qubits. (orig.)

  12. Josephson tunnel junctions with ferromagnetic interlayer

    Energy Technology Data Exchange (ETDEWEB)

    Weides, M.P.

    2006-07-01

    Superconductivity and ferromagnetism are well-known physical properties of solid states that have been widely studied and long thought about as antagonistic phenomena due to difference in spin ordering. It turns out that the combination of both superconductor and ferromagnet leads to a very rich and interesting physics. One particular example, the phase oscillations of the superconducting order parameter inside the ferromagnet, will play a major role for the devices discussed in this work. In this thesis, I present Josephson junctions with a thin Al{sub 2}O{sub 3} tunnel barrier and a ferromagnetic interlayer, i.e. superconductor-insulator-ferromagnet-superconductor (SIFS) stacks. The fabrication of junctions was optimized regarding the insulation of electrodes and the homogeneity of the current transport. The junctions were either in the 0 or {pi} coupled ground state, depending on the thickness of the ferromagnetic layer and on temperature. The influence of ferromagnetic layer thickness on the transport properties and the coupling (0, {pi}) of SIFS tunnel junctions was studied. Furthermore, using a stepped ferromagnetic layer with well-chosen thicknesses, I obtained the so-called 0-{pi} Josephson junction. At a certain temperature this 0-{pi} junction can be made perfectly symmetric. In this case the ground state corresponds to a vortex of supercurrent creating a magnetic flux which is a fraction of the magnetic flux quantum {phi}{sub 0}. Such structures allow to study the physics of fractional vortices and to build various electronic circuits based on them. The SIFS junctions presented here have an exponentially vanishing damping at T {yields} 0. The SIFS technology developed within the framework of this work may be used to construct classical and quantum devices such as oscillators, memory cells and qubits. (orig.)

  13. Properties of molecules in tunnel junctions

    OpenAIRE

    Yeriskin, Irene

    2013-01-01

    Molecular tunnel junctions involve studying the behaviour of a single molecule sandwiched between metal leads. When a molecule makes contact with electrodes, it becomes open to the environment which can heavily influence its properties, such as electronegativity and electron transport. While the most common computational approaches remain to be single particle approximations, in this thesis it is shown that a more explicit treatment of electron interactions can be required. By studying an ope...

  14. Canted magnetization texture in ferromagnetic tunnel junctions

    OpenAIRE

    Kuzmenko, Igor; Falko, Vladimir

    2008-01-01

    We study the formation of inhomogeneous magnetization texture in the vicinity of a tunnel junction between two ferromagnetic wires nominally in the antiparallel configuration and its influence on the magnetoresistance of such a device. The texture, dependent on magnetization rigidity and crystalline anisotropy energy in the ferromagnet, appears upon an increase of ferromagnetic inter-wire coupling above a critical value and it varies with an external magnetic field.

  15. Phonon spectroscopy with superconducting tunnel junctions

    International Nuclear Information System (INIS)

    Superconducting tunnel junctions can be used as generators and detectors of monochromatic phonons of frequency larger than 80 GHz, as was first devised by Eisenmenger and Dayem (1967) and Kinder (1972a, 1973). In this report, we intend to give a general outline of this type of spectroscopy and to present the results obtained so far. The basic physics underlying phonon generation and detection are described in chapter I, a wider approach being given in the references therein. In chapter II, the different types of junctions are considered with respect to their use. Chapter III deals with the evaporation technique for the superconducting junctions. The last part of this report is devoted to the results that we have obtained on γ-irradiated LiF, pure Si and Phosphorous implanted Si. In these chapters, the limitations of the spectrometer are brought out and suggestions for further work are given

  16. Soliton excitations in Josephson tunnel junctions

    International Nuclear Information System (INIS)

    A detailed numerical study of a sine-Gordon model of the Josephson tunnel junction is compared with experimental measurements on junctions with different L/lambda/sub J/ ratios. The soliton picture is found to apply well on both relatively (L/lambda/sub J/ = 6) and intermediate (L/lambda/sub J/ = 2) junctions. We find good agreement for the current-voltage characteristics, power output, and for the shape and height of the zero-field steps (ZFS). Two distinct modes of solition oscillations are observed: (i) a bunched or congealed mode giving rise to the fundamental frequency ∫1 on all ZFS's and (ii) a ''symmetric'' mode which on the Nth ZFS yields the frequency N∫1. Coexistence of two adjacent frequencies is found on the third ZFS of the longer junction (L/lambda/sub J/ = 6) in a narrow range of bias current as also found in the experiments. Small asymmetries in the experimental environment, a weak magnetic field, e.g., is introduced via the boundary conditions of our numerical model. This gives a junction response to variations in the applied bias current close to that observed experimentally

  17. Superconducting Tunnel Junction Arrays for UV Photon Detection Project

    Data.gov (United States)

    National Aeronautics and Space Administration — An innovative method is described for the fabrication of superconducting tunnel junction (STJ) detector arrays offering true "three dimensional" imaging throughout...

  18. Quantum Tunneling Current in Nanoscale Plasmonic Junctions

    Science.gov (United States)

    Zhang, Peng; Lau, Y. Y.; Gilgenbach, R. M.

    2014-10-01

    Recently, electron tunneling between plasmonic resonators is found to support quantum plasmon resonances, which may introduce new regimes in nano-optoelectronics and nonlinear optics. This revelation is of substantial interest to the fundamental problem of electron transport in nano-scale, for example, in a metal-insulator-metal junction (MIM), which has been continuously studied for decades. Here, we present a self-consistent model of electron transport in a nano-scale MIM, by solving the coupled Schrödinger and Poisson equations. The effects of space charge, exchange-correlation, anode emission, and material properties of the electrodes and insulator are examined in detail. The self-consistent calculations are compared with the widely used Simmons formula. Transition from the direct tunneling regime to the space-charge-limited regime is demonstrated. This work was supported by AFOSR.

  19. Resonant tunnel magnetoresistance in a double magnetic tunnel junction

    KAUST Repository

    Useinov, Arthur

    2011-08-09

    We present quasi-classical approach to calculate a spin-dependent current and tunnel magnetoresistance (TMR) in double magnetic tunnel junctions (DMTJ) FML/I/FMW/I/FMR, where the magnetization of the middle ferromagnetic metal layer FMW can be aligned parallel or antiparallel with respect to the fixed magnetizations of the left FML and right FMR ferromagnetic electrodes. The transmission coefficients for components of the spin-dependent current, and TMR are calculated as a function of the applied voltage. As a result, we found a high resonant TMR. Thus, DMTJ can serve as highly effective magnetic nanosensor for biological applications, or as magnetic memory cells by switching the magnetization of the inner ferromagnetic layer FMW.© Springer Science+Business Media, LLC 2011.

  20. Giant electrode effect on tunnelling electroresistance in ferroelectric tunnel junctions.

    Science.gov (United States)

    Soni, Rohit; Petraru, Adrian; Meuffels, Paul; Vavra, Ondrej; Ziegler, Martin; Kim, Seong Keun; Jeong, Doo Seok; Pertsev, Nikolay A; Kohlstedt, Hermann

    2014-01-01

    Among recently discovered ferroelectricity-related phenomena, the tunnelling electroresistance (TER) effect in ferroelectric tunnel junctions (FTJs) has been attracting rapidly increasing attention owing to the emerging possibilities of non-volatile memory, logic and neuromorphic computing applications of these quantum nanostructures. Despite recent advances in experimental and theoretical studies of FTJs, many questions concerning their electrical behaviour still remain open. In particular, the role of ferroelectric/electrode interfaces and the separation of the ferroelectric-driven TER effect from electrochemical ('redox'-based) resistance-switching effects have to be clarified. Here we report the results of a comprehensive study of epitaxial junctions comprising BaTiO(3) barrier, La(0.7)Sr(0.3)MnO(3) bottom electrode and Au or Cu top electrodes. Our results demonstrate a giant electrode effect on the TER of these asymmetric FTJs. The revealed phenomena are attributed to the microscopic interfacial effect of ferroelectric origin, which is supported by the observation of redox-based resistance switching at much higher voltages. PMID:25399545

  1. Parametric excitation of plasma oscillations in a Josephson tunnel junction

    DEFF Research Database (Denmark)

    Bak, Christen Kjeldahl; Kofoed, Bent; Pedersen, Niels Falsig;

    1975-01-01

    Experimental evidence for subharmonic parametric excitation of plasma oscillations in Josephson tunnel junctions is presented. The experiments described are performed by measuring the microwave power necessary to switch a Josephson−tunnel junction biased in the zero−voltage state to a finite......−voltage state. Journal of Applied Physics is copyrighted by The American Institute of Physics....

  2. Evolution of perpendicular magnetized tunnel junctions upon annealing

    Science.gov (United States)

    Devolder, Thibaut; Couet, S.; Swerts, J.; Furnemont, A.

    2016-04-01

    We study the evolution of perpendicularly magnetized tunnel junctions under 300 to 400 °C annealing. The hysteresis loops do not evolve much during annealing and they are not informative of the underlying structural evolutions. These evolutions are better revealed by the frequencies of the ferromagnetic resonance eigenmodes of the tunnel junction. Their modeling provides the exchange couplings and the layers' anisotropies within the stack which can serve as a diagnosis of the tunnel junction state after each annealing step. The anisotropies of the two CoFeB-based parts and the two Co/Pt-based parts of the tunnel junction decay at different rates during annealing. The ferromagnet exchange coupling through the texture-breaking Ta layer fails above 375 °C. The Ru spacer meant to promote a synthetic antiferromagnet behavior is also insufficiently robust to annealing. Based on these evolutions we propose optimization routes for the next generation tunnel junctions.

  3. Imaging of buried phosphorus nanostructures in silicon using scanning tunneling microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Oberbeck, Lars [Centre for Quantum Computation and Communication Technology, School of Physics, University of New South Wales, Sydney, New South Wales 2052 (Australia); TOTAL Marketing Services, New Energies, La Défense 10, 92069 Paris La Défense Cedex (France); Reusch, Thilo C. G.; Hallam, Toby; Simmons, Michelle Y., E-mail: n.curson@ucl.ac.uk, E-mail: michelle.simmons@unsw.edu.au [Centre for Quantum Computation and Communication Technology, School of Physics, University of New South Wales, Sydney, New South Wales 2052 (Australia); Schofield, Steven R. [Centre for Quantum Computation and Communication Technology, School of Physics, University of New South Wales, Sydney, New South Wales 2052 (Australia); London Centre for Nanotechnology, UCL, London WC1H 0AH (United Kingdom); Department of Physics and Astronomy, UCL, London WC1E 6BT (United Kingdom); Curson, Neil J., E-mail: n.curson@ucl.ac.uk, E-mail: michelle.simmons@unsw.edu.au [Centre for Quantum Computation and Communication Technology, School of Physics, University of New South Wales, Sydney, New South Wales 2052 (Australia); London Centre for Nanotechnology, UCL, London WC1H 0AH (United Kingdom); Department of Electronic and Electrical Engineering, UCL, London WC1E 7JE (United Kingdom)

    2014-06-23

    We demonstrate the locating and imaging of single phosphorus atoms and phosphorus dopant nanostructures, buried beneath the Si(001) surface using scanning tunneling microscopy. The buried dopant nanostructures have been fabricated in a bottom-up approach using scanning tunneling microscope lithography on Si(001). We find that current imaging tunneling spectroscopy is suited to locate and image buried nanostructures at room temperature and with residual surface roughness present. From these studies, we can place an upper limit on the lateral diffusion during encapsulation with low-temperature Si molecular beam epitaxy.

  4. Imaging of buried phosphorus nanostructures in silicon using scanning tunneling microscopy

    International Nuclear Information System (INIS)

    We demonstrate the locating and imaging of single phosphorus atoms and phosphorus dopant nanostructures, buried beneath the Si(001) surface using scanning tunneling microscopy. The buried dopant nanostructures have been fabricated in a bottom-up approach using scanning tunneling microscope lithography on Si(001). We find that current imaging tunneling spectroscopy is suited to locate and image buried nanostructures at room temperature and with residual surface roughness present. From these studies, we can place an upper limit on the lateral diffusion during encapsulation with low-temperature Si molecular beam epitaxy.

  5. Mesoscopic superconducting tunnel junction devices : experimental studies of performance limitations

    OpenAIRE

    Kivioja, Jani

    2005-01-01

    In this work four different mesoscopic superconducting devices have been experimentally studied: an ammeter based on a hysteretic Josephson junction switching from the superconducting state to the normal state, a conventional Cooper pair pump (CPP) based on two superconducting islands separated by tunnel junctions, a novel flux assisted Cooper pair pump and a thermometer based on a tunnel junction between a superconductor and a normal metal. These devices make use of phenomena related to supe...

  6. Planar Josephson tunnel junctions in a transverse magnetic field

    DEFF Research Database (Denmark)

    Monacoa, R.; Aarøe, Morten; Mygind, Jesper;

    2007-01-01

    demagnetization effects imposed by the tunnel barrier and electrodes geometry are important. Measurements of the junction critical current versus magnetic field in planar Nb-based high-quality junctions with different geometry, size, and critical current density show that it is advantageous to use a transverse......Traditionally, since the discovery of the Josephson effect in 1962, the magnetic diffraction pattern of planar Josephson tunnel junctions has been recorded with the field applied in the plane of the junction. Here we discuss the static junction properties in a transverse magnetic field where...... magnetic field rather than an in-plane field. The conditions under which this occurs are discussed....

  7. Superpoissonian shot noise in organic magnetic tunnel junctions

    OpenAIRE

    Cascales, Juan Pedro; Hong, Jhen-Yong; Martinez, Isidoro; Lin, Minn-Tsong; Szczepanski, Tomasz; Dugaev, Vitalii K.; Barnas, Jozef; Aliev, Farkad G.

    2015-01-01

    Organic molecules have recently revolutionized ways to create new spintronic devices. Despite intense studies, the statistics of tunneling electrons through organic barriers remains unclear. Here we investigate conductance and shot noise in magnetic tunnel junctions with PTCDA barriers a few nm thick. For junctions in the electron tunneling regime, with magnetoresistance ratios between 10 and 40\\%, we observe superpoissonian shot noise. The Fano factor exceeds in 1.5-2 times the maximum value...

  8. Superpoissonian shot noise in organic magnetic tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Cascales, Juan Pedro; Martinez, Isidoro; Aliev, Farkhad G., E-mail: farkhad.aliev@uam.es [Dpto. Fisica Materia Condensada C3, Instituto Nicolas Cabrera (INC), Condensed Matter Physics Institute (IFIMAC), Universidad Autonoma de Madrid, Madrid 28049 (Spain); Hong, Jhen-Yong; Lin, Minn-Tsong, E-mail: mtlin@phys.ntu.edu.tw [Department of Physics, National Taiwan University, Taipei 10617, Taiwan and Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan (China); Szczepański, Tomasz; Dugaev, Vitalii K. [Department of Physics, Rzeszów University of Technology, al. Powstańców Warszawy 6, 35-959 Rzeszów (Poland); Barnaś, Józef [Faculty of Physics, Adam Mickiewicz University, ul. Umultowska 85, 61-614 Poznań, Poland and Institute of Molecular Physics, Polish Academy of Sciences, ul. Smoluchowskiego 17, 60-179 Poznań (Poland)

    2014-12-08

    Organic molecules have recently revolutionized ways to create new spintronic devices. Despite intense studies, the statistics of tunneling electrons through organic barriers remains unclear. Here, we investigate conductance and shot noise in magnetic tunnel junctions with 3,4,9,10-perylene-teracarboxylic dianhydride (PTCDA) barriers a few nm thick. For junctions in the electron tunneling regime, with magnetoresistance ratios between 10% and 40%, we observe superpoissonian shot noise. The Fano factor exceeds in 1.5–2 times the maximum values reported for magnetic tunnel junctions with inorganic barriers, indicating spin dependent bunching in tunneling. We explain our main findings in terms of a model which includes tunneling through a two level (or multilevel) system, originated from interfacial bonds of the PTCDA molecules. Our results suggest that interfaces play an important role in the control of shot noise when electrons tunnel through organic barriers.

  9. Superpoissonian shot noise in organic magnetic tunnel junctions

    Science.gov (United States)

    Cascales, Juan Pedro; Hong, Jhen-Yong; Martinez, Isidoro; Lin, Minn-Tsong; Szczepański, Tomasz; Dugaev, Vitalii K.; Barnaś, Józef; Aliev, Farkhad G.

    2014-12-01

    Organic molecules have recently revolutionized ways to create new spintronic devices. Despite intense studies, the statistics of tunneling electrons through organic barriers remains unclear. Here, we investigate conductance and shot noise in magnetic tunnel junctions with 3,4,9,10-perylene-teracarboxylic dianhydride (PTCDA) barriers a few nm thick. For junctions in the electron tunneling regime, with magnetoresistance ratios between 10% and 40%, we observe superpoissonian shot noise. The Fano factor exceeds in 1.5-2 times the maximum values reported for magnetic tunnel junctions with inorganic barriers, indicating spin dependent bunching in tunneling. We explain our main findings in terms of a model which includes tunneling through a two level (or multilevel) system, originated from interfacial bonds of the PTCDA molecules. Our results suggest that interfaces play an important role in the control of shot noise when electrons tunnel through organic barriers.

  10. Superpoissonian shot noise in organic magnetic tunnel junctions

    International Nuclear Information System (INIS)

    Organic molecules have recently revolutionized ways to create new spintronic devices. Despite intense studies, the statistics of tunneling electrons through organic barriers remains unclear. Here, we investigate conductance and shot noise in magnetic tunnel junctions with 3,4,9,10-perylene-teracarboxylic dianhydride (PTCDA) barriers a few nm thick. For junctions in the electron tunneling regime, with magnetoresistance ratios between 10% and 40%, we observe superpoissonian shot noise. The Fano factor exceeds in 1.5–2 times the maximum values reported for magnetic tunnel junctions with inorganic barriers, indicating spin dependent bunching in tunneling. We explain our main findings in terms of a model which includes tunneling through a two level (or multilevel) system, originated from interfacial bonds of the PTCDA molecules. Our results suggest that interfaces play an important role in the control of shot noise when electrons tunnel through organic barriers

  11. An Effective Method for Borehole Imaging of Buried Tunnels

    Directory of Open Access Journals (Sweden)

    Loreto Di Donato

    2012-01-01

    Full Text Available Detection and imaging of buried tunnels is a challenging problem which is relevant to both geophysical surveys and security monitoring. To comply with the need of exploring large portions of the underground, electromagnetic measurements carried out under a borehole configuration are usually exploited. Since this requires to drill holes in the soil wherein the transmitting and receiving antennas have to be positioned, low complexity of the involved apparatus is important. On the other hand, to effectively image the surveyed area, there is the need for adopting efficient and reliable imaging methods. To address these issues, in this paper we investigate the feasibility of the linear sampling method (LSM, as this inverse scattering method is capable to provide almost real-time results even when 3D images of very large domains are built, while not requiring approximations of the underlying physics. In particular, the results of the reported numerical analysis show that the LSM is capable of performing the required imaging task while using a quite simple measurement configuration consisting of two boreholes and a few number of multiview-multistatic acquisitions.

  12. Tantalum oxide barrier in magnetic tunnel junctions

    Institute of Scientific and Technical Information of China (English)

    Guanghua Yu; Tingting Ren; Wei Ji; Jiao Teng; Fengwu Zhu

    2004-01-01

    Tantalum as an insulating barrier can take the place of Al in magnetic tunnel junctions (MTJs). Ta barriers in MTJs were fabricated by natural oxidation. X-ray photoelectron spectroscopy (XPS) was used to characterize the oxidation states of Ta barrier.The experimental results show that the chemical state of tantalum is pure Ta5+ and the thickness of the oxide is 1.3 nm. The unoxidized Ta in the barrier may chemically reacted with NiFe layer which is usually used in MTJs to form an intermetallic compound,NiTa2. A magnetic "dead layer" could be produced in the NiFe/Ta interface. The "dead layer" is likely to influence the spinning electron transport and the magnetoresistance effect.

  13. High temperature coefficient of resistance for a ferroelectric tunnel junction

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Xiaolin; Tian, Bobo; Liu, Bolu; Wang, Xudong; Huang, Hai [National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Yu Tian Road 500, Shanghai 200083 (China); University of Chinese Academy of Sciences, No. 19 A Yuquan Road, Beijing 100049 (China); Wang, Jianlu, E-mail: jlwang@mail.sitp.ac.cn, E-mail: xjmeng@mail.sitp.ac.cn; Zou, Yuhong; Sun, Shuo; Lin, Tie; Han, Li; Sun, Jinglan; Meng, Xiangjian, E-mail: jlwang@mail.sitp.ac.cn, E-mail: xjmeng@mail.sitp.ac.cn; Chu, Junhao [National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Yu Tian Road 500, Shanghai 200083 (China)

    2015-08-10

    An infrared detector is proposed that is based on a ferroelectric tunnel junction (FTJ) working under bolometer-like principles. Electron tunneling, either direct or indirect, through the ferroelectric barrier depends on the temperature of the devices. During tunneling, infrared radiation alters the polarization of the ferroelectric film via pyroelectricity, resulting in a change in the barrier height of the tunnel junction. A high temperature coefficient of resistance of up to −3.86% was observed at room temperature. These results show that the FTJ structure has potential to be adapted for use in uncooled infrared detectors.

  14. Magnetothermopower and magnon-assisted transport in ferromagnetic tunnel junctions

    OpenAIRE

    McCann, Edward; Fal'ko, Vladimir I.

    2002-01-01

    We present a model of the thermopower in a mesoscopic tunnel junction between two ferromagnetic metals based upon magnon-assisted tunneling processes. In our model, the thermopower is generated in the course of thermal equilibration between two baths of magnons, mediated by electrons. We predict a particularly large thermopower effect in the case of a junction between two half-metallic ferromagnets with antiparallel polarizations, $S_{AP} \\sim - (k_B/e)$, in contrast to $S_{P} \\approx 0$ for ...

  15. Observation of nuclear gamma resonance with superconducting tunnel junction detectors

    Directory of Open Access Journals (Sweden)

    M. G. Kozin

    2016-02-01

    Full Text Available Nb-based superconducting tunnel junction detectors have been used for the registration of electrons following a nuclear gamma resonance (Mössbauer effect. Electrons were produced by a RhFe scatterer under irradiation by the 57Co(Rh Mössbauer source. This observation demonstrates the role which can be played by superconducting tunnel junction detectors in the field of conversion electron Mössbauer spectroscopy and other types of electron spectroscopy.

  16. Spin-polarized current and tunnel magnetoresistance in heterogeneous single-barrier magnetic tunnel junctions

    Science.gov (United States)

    Petukhov, D. A.

    2016-06-01

    Current in heterogeneous tunnel junctions is studied in the framework of the parabolic conduction-band model. The developed model of the electron tunneling takes explicitly into account the difference of effective masses between ferromagnetic and insulating layers and between conduction subbands. Calculations for Fe/MgO/Fe-like structures have shown the essential impact of effective mass differences in regions (constituents) of the structure on the tunnel magnetoresistance of the junction.

  17. Parallel Quantum Circuit in a Tunnel Junction.

    Science.gov (United States)

    Faizy Namarvar, Omid; Dridi, Ghassen; Joachim, Christian

    2016-01-01

    Spectral analysis of 1 and 2-states per line quantum bus are normally sufficient to determine the effective Vab(N) electronic coupling between the emitter and receiver states through the bus as a function of the number N of parallel lines. When Vab(N) is difficult to determine, an Heisenberg-Rabi time dependent quantum exchange process must be triggered through the bus to capture the secular oscillation frequency Ωab(N) between those states. Two different linear and regimes are demonstrated for Ωab(N) as a function of N. When the initial preparation is replaced by coupling of the quantum bus to semi-infinite electrodes, the resulting quantum transduction process is not faithfully following the Ωab(N) variations. Because of the electronic transparency normalisation to unity and of the low pass filter character of this transduction, large Ωab(N) cannot be captured by the tunnel junction. The broadly used concept of electrical contact between a metallic nanopad and a molecular device must be better described as a quantum transduction process. At small coupling and when N is small enough not to compensate for this small coupling, an N(2) power law is preserved for Ωab(N) and for Vab(N). PMID:27453262

  18. Parallel Quantum Circuit in a Tunnel Junction

    Science.gov (United States)

    Faizy Namarvar, Omid; Dridi, Ghassen; Joachim, Christian

    2016-07-01

    Spectral analysis of 1 and 2-states per line quantum bus are normally sufficient to determine the effective Vab(N) electronic coupling between the emitter and receiver states through the bus as a function of the number N of parallel lines. When Vab(N) is difficult to determine, an Heisenberg-Rabi time dependent quantum exchange process must be triggered through the bus to capture the secular oscillation frequency Ωab(N) between those states. Two different linear and regimes are demonstrated for Ωab(N) as a function of N. When the initial preparation is replaced by coupling of the quantum bus to semi-infinite electrodes, the resulting quantum transduction process is not faithfully following the Ωab(N) variations. Because of the electronic transparency normalisation to unity and of the low pass filter character of this transduction, large Ωab(N) cannot be captured by the tunnel junction. The broadly used concept of electrical contact between a metallic nanopad and a molecular device must be better described as a quantum transduction process. At small coupling and when N is small enough not to compensate for this small coupling, an N2 power law is preserved for Ωab(N) and for Vab(N).

  19. Vertical inhomogeneities in superconducting tunnel junctions

    International Nuclear Information System (INIS)

    In a quest to further improve the performance of superconducting tunnel junctions (STJ) as photon detectors over the broad spectral range from optical to X-ray wavelengths, a fundamental understanding of their limits is required. Recently fabricated Ta/Al STJs have shown an exceptionally high responsivity (number of collected charge carriers versus absorbed photon energy) and spectral resolution (R=E/ΔE>22 at 2.5eV photon energy). This high spectral resolution has now revealed some unique features when plotted against photon wavelength. The experimental data indicate the important role of the photon absorption length. We have shown that vertical inhomogeneity is a fundamental consequence of the quasiparticle generation process in the thin film such that pair breaking phonons emitted in the process of energy down conversion have a chance to escape depending on the absorption depth. This results in an inhomogeneous broadening of the detected signal. We also found that another, previously unknown fundamental noise source exists which is related to statistical fluctuations of the angular distribution of phonons emitted in the down-conversion process. We present the new experimental data and compare them to the predictions of the down-conversion theory. We show that, while the responsivity is rather constant in the optical wavelength range, the intrinsic resolution exhibits a number of features which can be explained by changing statistical variations of the phonon losses as function of absorption depth

  20. Coulomb blockade in turnstile with multiple tunnel junctions

    CERN Document Server

    Lee, S C; Kang, D S; Kim, D C; Choi, C K; Ryu, J Y

    1999-01-01

    On the basis of the analytic solutions to the electrostatic problem of the multi-grated-small-junction systems, the stable domain for the Coulomb blockade of turnstile with multiple tunnel junctions at zero temperature has been analyzed as a function of the number of tunnel junction, the ratio of the gate capacitance to the junction capacitance, and the asymmetric factor. Our results show that domains form various shaped regions according to the asymmetric factor and their size depends on the number of junction and the ratio of the gate capacitance to the junction capacitance. In particular, it is shown that electrons can be transferred in positive and/or negative bias voltage depending on the asymmetric factor when an appropriate gate cycle is applied. Thus, the asymmetric factor plays an important role in determining the turnstile operation.

  1. Spin-polarized Inelastic Electron Tunneling Spectroscopy of Molecular Magnetic Tunnel Junctions

    International Nuclear Information System (INIS)

    In this study, we fabricate molecular magnetic tunnel junctions and demonstrate that inelastic electron tunneling spectroscopy technique can be utilized to inspect such junctions to investigate the existence of desired molecular species in the device area. Tunneling magnetoresistance measurements have been carried out and spin-dependent tunneling transport has been observed. Bias-dependence of the tunneling resistance has also been detected. IETS measurements at different magnetic field suggested that the TMR bias-dependence was likely caused by the inelastic scattering due to the molecular vibrations

  2. Tunneling into high-Tc superconductors: methods of fabricating tunnel junctions

    International Nuclear Information System (INIS)

    In the preprint we shell review some experimental results on electron tunneling into high-Tc superconductors. Pros and cons of various methods of fabricating the tunnel junctions with metal oxide compound as a base electrode are discussed. The data obtained by different groups are examined in terms of the tunneling criterion. 66 refs.; 13 figs

  3. Gap distance and Interactions in a Molecular Tunnel Junction

    OpenAIRE

    Chang, Shuai; He, Jin; Zhang, Peiming; Gyarfas, Brett; Lindsay, Stuart

    2011-01-01

    The distance between electrodes in a tunnel junction cannot be determined from the external movement applied to the electrodes because of interfacial forces that distort the electrode geometry at the nanoscale. These distortions become particularly complex when molecules are present in the junction, as demonstrated here by measurements of the AC response of a molecular junction over a range of conductivities from micro Siemens to pico Siemens. Specific chemical interactions within the junctio...

  4. Inelastic electron tunneling spectroscopy of molecular transport junctions

    International Nuclear Information System (INIS)

    Inelastic electron tunneling spectroscopy (IETS) has become a premier analytical tool in the investigation of nano scale and molecular junctions. The IETS spectrum provides invaluable information about the structure, bonding, and orientation of component molecules in the junctions. One of the major advantages of IETS is its sensitivity and resolution at the level of single molecules. This review discusses how IETS is used to study molecular transport junctions and presents an overview of recent experimental studies.

  5. Study of the geometrical resonances of superconducting tunnel junctions

    DEFF Research Database (Denmark)

    Sørensen, O. Hoffmann; Finnegan, T.F.; Pedersen, Niels Falsig

    1973-01-01

    The resonant cavity structure of superconducting Sn-Sn-oxide-Sn tunnel junctions has been investigated via photon-assisted quasiparticle tunneling. We find that the temperature-dependent losses at 35 GHz are determined by the surface resistance of the Sn films for reduced temperatures between 0...

  6. Tunnel junction enhanced nanowire ultraviolet light emitting diodes

    International Nuclear Information System (INIS)

    Polarization engineered interband tunnel junctions (TJs) are integrated in nanowire ultraviolet (UV) light emitting diodes (LEDs). A ∼6 V reduction in turn-on voltage is achieved by the integration of tunnel junction at the base of polarization doped nanowire UV LEDs. Moreover, efficient hole injection into the nanowire LEDs leads to suppressed efficiency droop in TJ integrated nanowire LEDs. The combination of both reduced bias voltage and increased hole injection increases the wall plug efficiency in these devices. More than 100 μW of UV emission at ∼310 nm is measured with external quantum efficiency in the range of 4–6 m%. The realization of tunnel junction within the nanowire LEDs opens a pathway towards the monolithic integration of cascaded multi-junction nanowire LEDs on silicon

  7. Spin-polarized tunneling in MgO-based tunnel junctions with superconducting electrodes

    Science.gov (United States)

    Schebaum, Oliver; Fabretti, Savio; Moodera, Jagadeesh S.; Thomas, Andy

    2012-03-01

    We prepared magnetic tunnel junctions with one ferromagnetic and one superconducting Al-Si electrode. Pure cobalt electrodes were compared with a Co-Fe-B alloy and the Heusler compound Co2FeAl. The polarization of the tunneling electrons was determined using the Maki-Fulde model and is discussed along with the spin-orbit scattering and the total pair-breaking parameters. The junctions were post-annealed at different temperatures to investigate the symmetry filtering mechanism responsible for the giant tunneling magnetoresistance ratios in Co-Fe-B/MgO/Co-Fe-B junctions.

  8. Barrier properties of HTSC tunnel junctions

    International Nuclear Information System (INIS)

    It was found that the overall shape of the normal state tunnel conductance of metal oxides with low Fermi energies is very sensitive to the barrier height and thickness. It was shown that this curve can differ considerably from the usual tunnel characteristics known from the tunnel spectroscopy of conventional metal

  9. Effects of junction geometry in crossover temperature to macroscopic quantum tunneling regime of intrinsic Josephson junctions

    International Nuclear Information System (INIS)

    We investigated the phase dynamics of Bi-2212 intrinsic Josephson junctions with two types of junction geometry. We found that a crossover temperature to the macroscopic quantum tunneling regime was quite different between the two types of junction geometry. The observed behavior is discussed in terms of an edge effect in long Josephson junctions dependent on the junction geometry. We investigated the phase dynamics of long intrinsic Josephson junctions, which were fabricated on a narrow bridge structure of Bi2Sr2CaCu2Oy (Bi-2212) single crystals by using a focused ion-beam etching. We measured the probability distribution of the switching events from the zero-voltage state for two types of junction geometry. One is a junction where the bridge width (L1) is larger than the Josephson penetration depth, λJ, and the distance between two slits (L2) is comparable to λJ, while the other is a junction where L1 is comparable to λJ and L2 is larger than λJ. We found that a crossover temperature from the thermally activated regime to the macroscopic quantum tunneling regime was quite different between the two types of junction geometry. We discuss the observed behavior in terms of an edge effect in long Josephson junctions dependent on the junction geometry.

  10. Construction Technique of Long-Span Shallow-Buried Tunnel Considering the Optimal Sequence of Pilot-Tunnel Excavation

    Directory of Open Access Journals (Sweden)

    Bao Jin

    2015-01-01

    Full Text Available Construction technique considering the optimal sequence of pilot-tunnel excavation was investigated in order to ensure the safety of construction process of long-span shallow-buried tunnel. Firstly, optimal comparisons of the effect of different sequence of pilot-tunnel excavation on the ground settlement were implemented by the numerical analysis. Secondly, an optimal construction method was determined and applied to the construction of a practical tunnel. Some key issues and procedure of the selected construction method were described in detail. Finally, the numerical modeling and calculation of the tunnel construction process were conducted, and the effectiveness of these simulations was demonstrated by using the measured data of the practical tunnel.

  11. Observation of fluctuation-induced tunneling conduction in micrometer-sized tunnel junctions

    Directory of Open Access Journals (Sweden)

    Yu-Ren Lai

    2012-09-01

    Full Text Available Micrometer-sized Al/AlOx/Y tunnel junctions were fabricated by the electron-beam lithography technique. The thin (≈ 1.5–2 nm thickness insulating AlOx layer was grown on top of the Al base electrode by O2 glow discharge. The zero-bias conductances G(T and the current-voltage characteristics of the junctions were measured in a wide temperature range 1.5–300 K. In addition to the direct tunneling conduction mechanism observed in low-G junctions, high-G junctions reveal a distinct charge transport process which manifests the thermally fluctuation-induced tunneling conduction (FITC through short nanoconstrictions. We ascribe the experimental realization of the FITC mechanism to originating from the formations of “hot spots” (incomplete pinholes in the AlOx layer owing to large junction-barrier interfacial roughness.

  12. Gap distance and interactions in a molecular tunnel junction.

    Science.gov (United States)

    Chang, Shuai; He, Jin; Zhang, Peiming; Gyarfas, Brett; Lindsay, Stuart

    2011-09-14

    The distance between electrodes in a tunnel junction cannot be determined from the external movement applied to the electrodes because of interfacial forces that distort the electrode geometry at the nanoscale. These distortions become particularly complex when molecules are present in the junction, as demonstrated here by measurements of the AC response of a molecular junction over a range of conductivities from microsiemens to picosiemens. Specific chemical interactions within the junction lead to distinct features in break-junction data, and these have been used to determine the electrode separation in a junction functionalized with 4(5)-(2-mercaptoethyl)-1H-imidazole-2-carboxamide, a reagent developed for reading DNA sequences. PMID:21838292

  13. GaInN-based tunnel junctions with graded layers

    Science.gov (United States)

    Takasuka, Daiki; Akatsuka, Yasuto; Ino, Masataka; Koide, Norikatsu; Takeuchi, Tetsuya; Iwaya, Motoaki; Kamiyama, Satoshi; Akasaki, Isamu

    2016-08-01

    We demonstrated low-resistivity GaInN-based tunnel junctions using graded GaInN layers. A systematic investigation of the samples grown by metalorganic vapor phase epitaxy revealed that a tunnel junction consisting of a 4 nm both-sides graded GaInN layer (Mg: 1 × 1020 cm‑3) and a 2 nm GaN layer (Si: 7 × 1020 cm‑3) showed the lowest specific series resistance of 2.3 × 10‑4 Ω cm2 at 3 kA/cm2 in our experiment. The InN mole fraction in the 4 nm both-sides graded GaInN layer was changed from 0 through 0.4 to 0. The obtained resistance is comparable to those of standard p-contacts with Ni/Au and MBE-grown tunnel junctions.

  14. Magnetostatic effects on switching in small magnetic tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Bapna, Mukund; Piotrowski, Stephan K.; Oberdick, Samuel D.; Majetich, Sara A., E-mail: sara@cmu.edu [Physics Department, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States); Li, Mingen; Chien, C.-L. [Department of Physics and Astronomy, Johns Hopkins University, Baltimore, Maryland 21218 (United States)

    2016-01-11

    Perpendicular CoFeB/MgO/CoFeB magnetic tunnel junctions with diameters under 100 nm are investigated by conductive atomic force microscopy. Minor loops of the tunnel magnetoresistance as a function of applied magnetic field reveal the hysteresis of the soft layer and an offset due to the magnetostatic field of the hard layer. Within the hysteretic region, telegraph noise is observed in the tunnel current. Simulations show that in this range, the net magnetic field in the soft layer is spatially inhomogeneous, and that antiparallel to parallel switching tends to start near the edge, while parallel to antiparallel reversal favors nucleation in the interior of the soft layer. As the diameter of the tunnel junction is decreased, the average magnitude of the magnetostatic field increases, but the spatial inhomogeneity across the soft layer is reduced.

  15. Shot noise in magnetic double-barrier tunnel junctions

    OpenAIRE

    Szczepański, T; Dugaev, V. K.; Barnaå, J.; Cascales, J. P.; Aliev, F. G.

    2013-01-01

    We calculate shot noise and the corresponding Fano factors in magnetic double-barrier tunnel junctions. Two situations are analyzed: (i) the central metallic layer is nonmagnetic while the external ones are ferromagnetic, and (ii) all of the metallic layers are ferromagnetic. In the latter case, the number of various magnetic configurations of the junctions is larger, which improves the functionality of such devices. The corresponding shot noise and Fano factor are shown to depend on the magn...

  16. Spin nutation effects in molecular nanomagnet$-$superconductor tunnel junctions

    OpenAIRE

    Abouie, J.; Abdollahipour, B.; A. A. Rostami

    2013-01-01

    We study the spin nutation effects of the molecular nanomagnet on the Josephson current through a superconductor$|$molecular nanomagnet$|$superconductor tunnel junction. We explicitly demonstrate that due to the spin nutation of the molecular nanomagnet two oscillatory terms emerge in the $ac$ Josephson current in addition to the conventional $ac$ Josephson current. Some resonances occur in the junction due to the interactions of the transported quasiparticles with the bias voltage and molecu...

  17. Prism-coupled light emission from tunnel junctions

    Science.gov (United States)

    Ushioda, S.; Rutledge, J. E.; Pierce, R. M.

    1985-01-01

    Completely p-polarized light emission has been observed from smooth Al-AlO(x)-Au tunnel junctions placed on a prism coupler. The angle and polarization dependence demonstrate unambiguously that the emitted light is radiated by the fast-mode surface plasmon polariton. The emission spectra suggest that the dominant process for the excitation of the fast mode is through conversion of the slow mode to the fast mode mediated by residual roughness on the junction surface.

  18. Magnetoresistance of galfenol-based magnetic tunnel junction

    Science.gov (United States)

    Gobaut, B.; Vinai, G.; Castán-Guerrero, C.; Krizmancic, D.; Rafaqat, H.; Roddaro, S.; Rossi, G.; Panaccione, G.; Eddrief, M.; Marangolo, M.; Torelli, P.

    2015-12-01

    The manipulation of ferromagnetic layer magnetization via electrical pulse is driving an intense research due to the important applications that this result will have on memory devices and sensors. In this study we realized a magnetotunnel junction in which one layer is made of Galfenol (Fe1-xGax) which possesses one of the highest magnetostrictive coefficient known. The multilayer stack has been grown by molecular beam epitaxy and e-beam evaporation. Optical lithography and physical etching have been combined to obtain 20x20 micron sized pillars. The obtained structures show tunneling conductivity across the junction and a tunnel magnetoresistance (TMR) effect of up to 11.5% in amplitude.

  19. Magnetoresistance of galfenol-based magnetic tunnel junction

    International Nuclear Information System (INIS)

    The manipulation of ferromagnetic layer magnetization via electrical pulse is driving an intense research due to the important applications that this result will have on memory devices and sensors. In this study we realized a magnetotunnel junction in which one layer is made of Galfenol (Fe1-xGax) which possesses one of the highest magnetostrictive coefficient known. The multilayer stack has been grown by molecular beam epitaxy and e-beam evaporation. Optical lithography and physical etching have been combined to obtain 20x20 micron sized pillars. The obtained structures show tunneling conductivity across the junction and a tunnel magnetoresistance (TMR) effect of up to 11.5% in amplitude

  20. Arrays of Nano Tunnel Junctions as Infrared Image Sensors

    Science.gov (United States)

    Son, Kyung-Ah; Moon, Jeong S.; Prokopuk, Nicholas

    2006-01-01

    Infrared image sensors based on high density rectangular planar arrays of nano tunnel junctions have been proposed. These sensors would differ fundamentally from prior infrared sensors based, variously, on bolometry or conventional semiconductor photodetection. Infrared image sensors based on conventional semiconductor photodetection must typically be cooled to cryogenic temperatures to reduce noise to acceptably low levels. Some bolometer-type infrared sensors can be operated at room temperature, but they exhibit low detectivities and long response times, which limit their utility. The proposed infrared image sensors could be operated at room temperature without incurring excessive noise, and would exhibit high detectivities and short response times. Other advantages would include low power demand, high resolution, and tailorability of spectral response. Neither bolometers nor conventional semiconductor photodetectors, the basic detector units as proposed would partly resemble rectennas. Nanometer-scale tunnel junctions would be created by crossing of nanowires with quantum-mechanical-barrier layers in the form of thin layers of electrically insulating material between them (see figure). A microscopic dipole antenna sized and shaped to respond maximally in the infrared wavelength range that one seeks to detect would be formed integrally with the nanowires at each junction. An incident signal in that wavelength range would become coupled into the antenna and, through the antenna, to the junction. At the junction, the flow of electrons between the crossing wires would be dominated by quantum-mechanical tunneling rather than thermionic emission. Relative to thermionic emission, quantum mechanical tunneling is a fast process.

  1. Cobalt-based Heusler compounds in magnetic tunnel junctions

    OpenAIRE

    Ebke, Daniel

    2010-01-01

    Spintronic devices have attracted a lot of attention in recent years due to possible new applications, e.g., a magnetic random access memory (MRAM), logic and sensors. The spin of the electrons is used as an additional degree of freedom in contrast to common electronic devices. The main constituent of many spintronic devices is the magnetic tunnel junction (MTJ) where two ferromagnets are separated by a thin insulating tunnel barrier. The resistance of such a device depends on the magnetic or...

  2. Theory of Graphene-Insulator-Graphene Tunnel Junctions

    OpenAIRE

    de la Barrera, S. C.; Gao, Qin; Feenstra, R. M.

    2014-01-01

    Graphene-insulator-graphene vertical tunneling structures are discussed from a theoretical perspective. Momentum conservation in such devices leads to highly nonlinear current-voltage characteristics, which with gates on the tunnel junction form potentially useful transistor structures. Two prior theoretical treatments of such devices are discussed; the treatments are shown to be formally equivalent, although some differences in their implementations are identified. The limit of zero momentum...

  3. Some issues of superconducting tunnel junction for radiation detector

    International Nuclear Information System (INIS)

    In the case of applying superconducting tunnel junctions to devices, it is roughly divided into those utilizing Josephson effect which is the tunnel effect of Cooper pair and those utilizing the tunnel effect of quasi-particles. Owing to the high speed switching of Josephson effect, the development of computer elements, analog signal processing, A/D converters and others is advanced. Owing to the high sensitivity to magnetic fields, there is SQUID application, and owing to the high accuracy, it is applied to voltage standard and potentiometers. As the devices utilizing the tunnel effect of quasi-particles, owing to its high sensitivity, the development of radiation detectors, and owing to its high speed and nonequilibrium superconductivity, the development of superconducting three-terminal elements are advanced. Owing to its high frequency, it is applied to receivers and amplifiers. As the general performance demanded for superconducting tunnel junctions, large gap voltage, large Vm value, mechanical strength, the stability to thermal cycles, the controllability and reproducibility of critical current, the flexibility of manufacturing processes and so on are enumerated. The tunnel junctions for radiation detectors are described. (K.I.)

  4. Proximity effects in all refractory Josephson tunnel junctions

    International Nuclear Information System (INIS)

    The theoretical approach to proximity effect based on the thermodynamic Green's functions is considered to investigate the behaviour of all refractory Josephson tunnel junctions. The experimental dependence of the maximum dc Josephson current on temperature is analysed. Two junction configurations are studied: Nb-Al/AlOx/Nb structures with a rather thick Al film and high quality Nb/Nb junctions with either a semimetallic or a metallic back-layer (Nb/AlOx/Nb-Bi, Nb/AlOx/Nb-Al). A satisfying agreement between theoretical calculations and experimental data is found. (orig.)

  5. Submicron NbN Josephson tunnel junctions for digital applications

    International Nuclear Information System (INIS)

    Submicron NbN/MgO/NbN Josephson tunnel junctions have been investigated to make Josephson integrated circuits. The junctions have been fabricated successfully by the cross-line-patterning (CLIP) method with an electron-beam (EB) direct-writing technique. All refractory fabrication process for logic circuits using the CLIP method is presented. This process is applied to fabrication of a logic gate of 4JL containing 0.8 μm-square junctions as an example of digital applications. The logic gate has been fabricated by this process. The authors also discuss the characteristics of the gate

  6. Flicker (1/f) noise in tunnel junction DC SQUIDS

    International Nuclear Information System (INIS)

    We have measured the spectral density of the 1/f voltage noise in current-biased resistively shunted Josephson tunnel junctions and dc SQUIDs. A theory in which fluctuations in the temperature give rise to fluctuations in the critical current and hence in the voltage predicts the magnitude of the noise quite accurately for junctions with areas of about 2 x 104 μm2, but significantly overestimates the noise for junctions with areas of about 6 μm2. DC SQUIDs fabricated from these two types of junctions exhibit substantially more 1/f voltage noise than would be predicted from a model in which the noise arises from critical current fluctuations in the junctions. This result was confirmed by an experiment involving two different bias current and flux modulation schemes, which demonstrated that the predominant 1/f voltage noise arises not from critical current fluctuations, but from some unknown source that can be regarded as an apparent 1/f flux noise. Measurements on five different configurations of dc SQUIDs fabricated with thin-film tunnel junctions and with widely varying areas, inductances, and junction capacitances show that the spectral density of the 1/f equivalent flux noise is roughtly constant, within a factor of three of (10-10/f)phi20Hz-1. It is emphasized that 1/f flux noise may not be the predominant source of 1/f noise in SQUIDS fabricated with other technologies

  7. In situ experiments on width and evolution characteristics of excavation damaged zone in deeply buried tunnels

    Institute of Scientific and Technical Information of China (English)

    2011-01-01

    The seven long tunnels of Jinping II hydropower station are deeply buried.The width and evolution characteristics of excavation damaged zone(EDZ) are the key problem to the design of tunnels excavation and supports.In order to study this problem,several specific experimental tunnels with different overburden and geometric sizes were excavated at this site.Digital borehole camera,sliding micrometer,cross-hole acoustic wave equipment and acoustic emission apparatus were adopted.This paper introduced the comprehensive in situ experimental methods through pre-installed facilities and pre-drilled boreholes.Typical properties of the surrounding rock mass,including cracks,deformation,elastic wave and micro fractures,were measured during the whole process of the tunnel excavation.The width and characteristics of formation and evolution of tunnels EDZ were analyzed under different construction methods involving of TBM and drilling and blasting,the test tunnels were excavated by full-face or two benches.The relationships between EDZ and tunnel geometry sizes,overburden and excavation method were described as well.The results will not only contribute a great deal to the analysis of rock mass behavior in deeply buried rock mass,but also provide direct data for support design and rockburst prediction.

  8. Fluxon dynamics in long annular Josephson tunnel junctions

    DEFF Research Database (Denmark)

    Martucciello, N.; Mygind, Jesper; Koshelets, V.P.; Shchukin, A.V.; Filippenko, L.; Monaco, R

    1998-01-01

    Single-fluxon dynamics has been experimentally investigated in high-quality Nb/Al-AlOx/Nb annular Josephson tunnel junctions having a radius much larger than the Josephson penetration depth. Strong evidence of self-field effects is observed. An external magnetic field in the barrier plane acts on...

  9. Single electron pump fabricated with ultrasmall normal tunnel junctions

    International Nuclear Information System (INIS)

    We have designed and operated a device through which single electrons can be 'pumped' reversibly. It consists of a linear array of three tunnel junctions voltage biased below the Coulomb gap. Phase shifted ac voltages applied to two gates pump one electron per cycle. (orig.)

  10. Spin-transfer torque in spin filter tunnel junctions

    KAUST Repository

    Ortiz Pauyac, Christian

    2014-12-08

    Spin-transfer torque in a class of magnetic tunnel junctions with noncollinear magnetizations, referred to as spin filter tunnel junctions, is studied within the tight-binding model using the nonequilibrium Green\\'s function technique within Keldysh formalism. These junctions consist of one ferromagnet (FM) adjacent to a magnetic insulator (MI) or two FM separated by a MI. We find that the presence of the magnetic insulator dramatically enhances the magnitude of the spin-torque components compared to conventional magnetic tunnel junctions. The fieldlike torque is driven by the spin-dependent reflection at the MI/FM interface, which results in a small reduction of its amplitude when an insulating spacer (S) is inserted to decouple MI and FM layers. Meanwhile, the dampinglike torque is dominated by the tunneling electrons that experience the lowest barrier height. We propose a device of the form FM/(S)/MI/(S)/FM that takes advantage of these characteristics and allows for tuning the spin-torque magnitudes over a wide range just by rotation of the magnetization of the insulating layer.

  11. Capacitively Coupled Hot-Electron Nanobolometer with SIN Tunnel Junctions

    Science.gov (United States)

    Kuzmin, Leonid S.; Fominsky, M.; Kalabukhov, A.; Golubev, D.; Tarasov, M.

    2003-02-01

    A capacitively coupled hot-electron nanobolometer (CC-HEB) is the simplest and most effective antenna-coupled bolometer. The bolometer consists of a small absorber connected to the superconducting antenna by tunnel junctions. The tunnel junctions used for high-frequency coupling also give perfect thermal isolation of hot electrons in the small volume of the absorber. The same tunnel junctions are used for temperature measurements and electron cooling. This bolometer does not suffer from the frequency limitations in the submillimeter range due to the high potential barrier of the tunnel junctions as does the microbolometer with Andreev mirrors (A-HEB), which is limited by the superconducting gap. Theoretical analyses show that the two-junction configuration more than doubles the sensitivity of the bolometer in current-biased mode compared to the single-junction configuration used for A-HEB. Another important advantage of CC-HEB is its simple two-layer technology for sample fabrication. Samples were fabricated with an absorber made of a bilayer of Cr and Al to match the impedance of the antenna. Electrodes were made of Al and tunnel junctions were formed over the Al oxide layer. The coupling capacitances of the tunnel junctions, C ≍ 20 fF, in combination with the inductance of the 10 μm absorber create a bandpass filter with a central frequency around 300 GHz. Bolometers are integrated with log-periodic and double-dipole planar antennas made of Au. The temperature response of bolometer structures was measured at temperatures down to 256 mK. In our experiment we observed dV/dT=1.3 mV/K, corresponding to responsivity S=0.2.109 V/W. For amplifier noise Vna=3nV/Hz1/2 at 1 kHz the estimated total noise equivalent power is NEP=1.5.10-17 W/Hz1/2. The intrinsic bolometer self noise Vnbol=0.5 nV/Hz1/2 corresponds to NEP=3.10-18 W/Hz1/2. For microwave evaluation of bolometer sensitivity we used a black body radiation source comprising a thin NiCr stimulator placed on the

  12. Engineering of spin filtering in double epitaxial tunnel junctions

    International Nuclear Information System (INIS)

    Double-barrier fully epitaxial crystalline magnetic tunnel junctions employing a class of artificial antiferromagnetic (AAF) subsystem are elaborated by molecular-beam epitaxy. Our specific AAF subsystem is constituted by an Fe(10 nm)/MgO(0.7 nm)/Fe(20 nm) trilayer stack where the antiferromagnetic coupling between the two Fe layers occurs by spin-polarized tunneling of electrons across the three, atomic-layer thin MgO insulating barrier. In our junctions, the efficiency of spin filtering is validated by the tunnel magnetoresistance effects of about 140% at room temperature and a high output voltage up to 500 mV at 1.3 V

  13. Dynamical Coulomb blockade of tunnel junctions driven by alternating voltages

    Science.gov (United States)

    Grabert, Hermann

    2015-12-01

    The theory of the dynamical Coulomb blockade is extended to tunneling elements driven by a time-dependent voltage. It is shown that, for standard setups where an external voltage is applied to a tunnel junction via an impedance, time-dependent driving entails an excitation of the modes of the electromagnetic environment by the applied voltage. Previous approaches for ac driven circuits need to be extended to account for the driven bath modes. A unitary transformation involving also the variables of the electromagnetic environment is introduced which allows us to split off the time dependence from the Hamiltonian in the absence of tunneling. This greatly simplifies perturbation-theoretical calculations based on treating the tunneling Hamiltonian as a perturbation. In particular, the average current flowing in the leads of the tunnel junction is studied. Explicit results are given for the case of an applied voltage with a constant dc part and a sinusoidal ac part. The connection with standard dynamical Coulomb blockade theory for constant applied voltage is established. It is shown that an alternating voltage source reveals significant additional effects caused by the electromagnetic environment. The hallmark of the dynamical Coulomb blockade in ac driven devices is a suppression of higher harmonics of the current by the electromagnetic environment. The theory presented basically applies to all tunneling devices driven by alternating voltages.

  14. Resonant inelastic tunneling in molecular junctions

    OpenAIRE

    Galperin, Michael; Nitzan, Abraham; Ratner, Mark A.

    2005-01-01

    Within a phonon-assisted resonance level model we develop a self-consistent procedure for calculating electron transport currents in molecular junctions with intermediate to strong electron-phonon interaction. The scheme takes into account the mutual influence of the electron and phonon subsystems. It is based on the 2nd order cumulant expansion, used to express the correlation function of the phonon shift generator in terms of the phonon momentum Green function. Equation of motion (EOM) meth...

  15. Fabrication and tunneling properties of niobium/lead Josephson junctions

    International Nuclear Information System (INIS)

    High quality Josephson tunneling junctions were fabricated by the process of electron beam evaporation of the Nb-base electrode. Thermal oxidation of Nb coated and uncoated surfaces was used in order to grow the oxide barrier at room temperature. Lead was used to complete the sandwich-type structure. The tunneling properties were profoundly sensitive to the surface properties of the Nb films. Markedly improved Josephson tunneling characteristics were found by depositing much higher residual resistance ratio (>100) films, which in this case seemed to be single crystal. One of the main deterrents for the practical use of high quality Nb/Nb:O/sub x//Pb Josephson junctions has been the high value of the specific capacitance of the native oxides which is drastically reduced by using single crystal Nb thin films. Some of the important parameters of the junctions can be modified by coating the Nb surface. It was demonstrated that Zr, Ti, and Al can be employed as oxidized barriers on single-crystal Nb films to produce high quality Josephson junctions that preserve the low values of the dielectric constant

  16. Fabrication and Tunneling Properties of Niobium/lead Josephson Junctions

    Science.gov (United States)

    Celaschi, Sergio

    High quality Josephson tunneling junctions have been fabricated by the process of electron beam evaporation of the Nb base electrode. Thermal oxidation of Nb coated and uncoated surfaces was used in order to grow the oxide barrier at room temperature. Lead was used to complete the sandwich-type structure. The tunneling properties were profoundly sensitive to the surface properties of the Nb films. We found markedly improved Josephson tunneling characteristics by depositing much higher residual resistance ratio (>100) films which in this case seemed to be single crystal. One of the main deterrents for the practical use of high quality Nb/Nb:O(,X)/Pb Josephson junctions has been the high value of the specific capacitance of the native oxides which is drastically reduced by using single crystal Nb thin films. Some of the important parameters of the junctions can be modified by coating the Nb surface. We have demonstrated that Zr, Ti, and Al can be employed as oxidized barriers on single-crystal Nb films to produce high quality Josephson junctions which preserve the low values of the dielectric constant.

  17. InAs/Si Hetero-Junction Nanotube Tunnel Transistors

    KAUST Repository

    Hanna, Amir

    2015-04-29

    Hetero-structure tunnel junctions in non-planar gate-all-around nanowire (GAA NW) tunnel FETs (TFETs) have shown significant enhancement in ‘ON’ state tunnel current over their all-silicon counterpart. Here we show the unique concept of nanotube TFET in a hetero-structure configuration that is capable of much higher drive current as opposed to that of GAA NW TFETs.Through the use of inner/outer core-shell gates, a single III-V hetero-structured nanotube TFET leverages physically larger tunneling area while achieving higher driver current (ION) and saving real estates by eliminating arraying requirement. Numerical simulations has shown that a 10 nm thin nanotube TFET with a 100 nm core gate has a 5×normalized output current compared to a 10 nm diameter GAA NW TFET.

  18. Q factor and resonance amplitude of Josephson tunnel junctions

    International Nuclear Information System (INIS)

    The surface impedance of the superconducting films comprising the electrodes of Josephson tunnel junctions has been derived from the BCS theory in the extreme London limit. Expressions have been obtained for (i) the dependence of the penetration depth lambda on frequency and temperature, and (ii) the quality factor Q of the junction cavity, attributable to surface absorption in the electrodes. The effect of thin electrodes (t 9 or approx. = lambda) is also included in the calculations. Comparison of the calculated frequency dependence of lambda with resonance measurements on Pb-alloy and all-Nb tunnel junctions yields quite good agreement, indicating that the assumptions made in the theory are reasonable. Measurements of the (current) amplitude of the resonance peaks of the junctions have been compared with the values obtained from inclusion of the calculated Q in the theory by Kulik. In common with observations on microwave cavities by other workers, we find that a small residual conductivity must be added to the real part of the BCS value. With its inclusion, good agreement is found between calculation and experiment, within the range determined by the simplifying assumptions of Kulik's theory. From the results, we believe the calculation of Q to be reasonably accurate for the materials investigated. It is shown that the resonance amplitude of Josephson junctions can be calculated directly from the material constants and a knowledge of the residual conductivity

  19. Simulation of Tunnel Junction in Cascade Solar Cell (GaAs/Ge) Using AMPS-1D

    OpenAIRE

    Benmoussa Dennai; H. Ben Slimane; Helmaoui, A.

    2014-01-01

    The development of the tunnel junction interconnect was key the first two-terminal monolithic, multi-junction solar cell development. This paper describes simulation for the tunnel junction (GaAs) between top cell (GaAs) and bottom cell (Ge). This solar cell cascade was simulated when using one dimensional simulation program called analysis of microelectronic and photonic structures (AMPS-1D). In the simulation, the thickness of the tunnel junction layer was varied from 10 to 50 nm. By varyin...

  20. Asymmetric voltage behavior of the tunnel magnetoresistance in double barrier magnetic tunnel junctions

    KAUST Repository

    Useinov, Arthur

    2012-06-01

    In this paper, we study the value of the tunnel magnetoresistance (TMR) as a function of the applied voltage in double barrier magnetic tunnel junctions (DMTJs) with the left and right ferromagnetic (FM) layers being pinned and numerically estimate the possible difference of the TMR curves for negative and positive voltages in the homojunctions (equal barriers and electrodes). DMTJs are modeled as two single barrier junctions connected in series with consecutive tunneling (CST). We investigated the asymmetric voltage behavior of the TMR for the CST in the range of a general theoretical model. Significant asymmetries of the experimental curves, which arise due to different annealing regimes, are mostly explained by different heights of the tunnel barriers and asymmetries of spin polarizations in magnetic layers. © (2012) Trans Tech Publications.

  1. Josephson Effect in Pb/I/NbSe2 Scanning Tunneling Microscope Junctions

    OpenAIRE

    Naaman, O.; Dynes, R. C.; Bucher, E.

    2003-01-01

    We have developed a method for the reproducible fabrication of superconducting scanning tunneling microscope (STM) tips. We use these tips to form superconductor/insulator/superconductor tunnel junctions with the STM tip as one of the electrodes. We show that such junctions exhibit fluctuation dominated Josephson effects, and describe how the Josephson product IcRn can be inferred from the junctions' tunneling characteristics in this regime. This is first demonstrated for tunneling into Pb fi...

  2. Normal-metal-superconductor tunnel junction as a Brownian refrigerator.

    Science.gov (United States)

    Pekola, J P; Hekking, F W J

    2007-05-25

    Thermal noise generated by a hot resistor (resistance R) can, under proper conditions, catalyze heat removal from a cold normal metal (N) in contact with a superconductor (S) via a tunnel barrier (I). Such a NIS junction is reminiscent of Maxwell's demon, rectifying the heat flow. Upon reversal of the temperature gradient between the resistor and the junction, the heat fluxes are reversed: this presents a regime which is not accessible in an ordinary voltage-biased NIS structure. We obtain analytical results for the cooling performance in an idealized high impedance environment and perform numerical calculations for general R. We conclude by assessing the experimental feasibility of the proposed effect. PMID:17677759

  3. Engineering ferroelectric tunnel junctions through potential profile shaping

    Directory of Open Access Journals (Sweden)

    S. Boyn

    2015-06-01

    Full Text Available We explore the influence of the top electrode materials (W, Co, Ni, Ir on the electronic band profile in ferroelectric tunnel junctions based on super-tetragonal BiFeO3. Large variations of the transport properties are observed at room temperature. In particular, the analysis of current vs. voltage curves by a direct tunneling model indicates that the metal/ferroelectric interfacial barrier height increases with the top-electrode work function. While larger metal work functions result in larger OFF/ON ratios, they also produce a large internal electric field which results in large and potentially destructive switching voltages.

  4. Engineering ferroelectric tunnel junctions through potential profile shaping

    Energy Technology Data Exchange (ETDEWEB)

    Boyn, S.; Garcia, V., E-mail: vincent.garcia@thalesgroup.com; Fusil, S.; Carrétéro, C.; Garcia, K.; Collin, S.; Deranlot, C.; Bibes, M.; Barthélémy, A. [Unité Mixte de Physique CNRS/Thales, 1 Av. Fresnel, 91767 Palaiseau, France and Université Paris-Sud, 91405 Orsay (France); Xavier, S. [Thales Research and Technology, 1 Av. Fresnel, 91767 Palaiseau (France)

    2015-06-01

    We explore the influence of the top electrode materials (W, Co, Ni, Ir) on the electronic band profile in ferroelectric tunnel junctions based on super-tetragonal BiFeO{sub 3}. Large variations of the transport properties are observed at room temperature. In particular, the analysis of current vs. voltage curves by a direct tunneling model indicates that the metal/ferroelectric interfacial barrier height increases with the top-electrode work function. While larger metal work functions result in larger OFF/ON ratios, they also produce a large internal electric field which results in large and potentially destructive switching voltages.

  5. Microwave enhancement of superconductivity in aluminum tunnel junctions

    International Nuclear Information System (INIS)

    Microwave radiation (0.1 to 12 GHz) was propagated in a microstrip transmission line formed by a superconducting Al film on a BaF2 substrate. Cross strips formed Al--Al oxide--Al tunnel junctions that were used to study the effect of microwaves on the superconducting properties of the Al films. Large increases in the energy gap and transition temperature were observed for frequencies near 3.7 GHz. The enhancements were negligible below 1 GHz. Anomalous behavior of the features in the tunneling characteristics was observed above 5 GHz

  6. Magnetoresistance in the ferromagnet/insulator/ferromagnet tunnel junction

    Institute of Scientific and Technical Information of China (English)

    Lu Hong-Xia; Dong Zheng-Chao; Fu Hao

    2008-01-01

    Recently experiments and theories show that the tunnel magnetoresistance (TMR) does not only depend on the ferromagnetic metal electrodes but also on the insulator.Considering the rough-scattering effect and spin-flip effect in the insulator,this paper investigates the TMR ratio in a ferromagnet/insulator/ferromagnet (FM/I/FM) tunnelling junction by using Slonczewsik's model.A more general expression of TMR ratio as a function of barrier height,interface roughness and spin-flip effect is obtained.In lower barrier case,it shows that the TMR ratio depends on the roughscattering effect and spin-flip effect.

  7. Spin transfer torque with spin diffusion in magnetic tunnel junctions

    KAUST Repository

    Manchon, Aurelien

    2012-08-09

    Spin transport in magnetic tunnel junctions in the presence of spin diffusion is considered theoretically. Combining ballistic tunneling across the barrier and diffusive transport in the electrodes, we solve the spin dynamics equation in the metallic layers. We show that spin diffusion mixes the transverse spin current components and dramatically modifies the bias dependence of the effective spin transfer torque. This leads to a significant linear bias dependence of the out-of-plane torque, as well as a nonconventional thickness dependence of both spin torque components.

  8. Tunneling rates in electron transport through double-barrier molecular junctions in a scanning tunneling microscope

    OpenAIRE

    Nazin, G. V.; S. W. Wu; Ho, W.

    2005-01-01

    The scanning tunneling microscope enables atomic-scale measurements of electron transport through individual molecules. Copper phthalocyanine and magnesium porphine molecules adsorbed on a thin oxide film grown on the NiAl(110) surface were probed. The single-molecule junctions contained two tunneling barriers, vacuum gap, and oxide film. Differential conductance spectroscopy shows that electron transport occurs via vibronic states of the molecules. The intensity of spectral peaks correspondi...

  9. Magnetoresistance of galfenol-based magnetic tunnel junction

    Directory of Open Access Journals (Sweden)

    B. Gobaut

    2015-12-01

    Full Text Available The manipulation of ferromagnetic layer magnetization via electrical pulse is driving an intense research due to the important applications that this result will have on memory devices and sensors. In this study we realized a magnetotunnel junction in which one layer is made of Galfenol (Fe1-xGax which possesses one of the highest magnetostrictive coefficient known. The multilayer stack has been grown by molecular beam epitaxy and e-beam evaporation. Optical lithography and physical etching have been combined to obtain 20x20 micron sized pillars. The obtained structures show tunneling conductivity across the junction and a tunnel magnetoresistance (TMR effect of up to 11.5% in amplitude.

  10. Magnetoresistance of galfenol-based magnetic tunnel junction

    Energy Technology Data Exchange (ETDEWEB)

    Gobaut, B., E-mail: benoit.gobaut@elettra.eu [Sincrotrone Trieste S.C.p.A., S.S. 14 Km 163.5, Area Science Park, 34149 Trieste (Italy); Vinai, G.; Castán-Guerrero, C.; Krizmancic, D.; Panaccione, G.; Torelli, P. [Laboratorio TASC, IOM-CNR, S.S. 14km 163.5, Basovizza, 34149 Trieste (Italy); Rafaqat, H. [Laboratorio TASC, IOM-CNR, S.S. 14km 163.5, Basovizza, 34149 Trieste (Italy); ICTP, Trieste (Italy); Roddaro, S. [Laboratorio TASC, IOM-CNR, S.S. 14km 163.5, Basovizza, 34149 Trieste (Italy); NEST, Scuola Normale Superiore and Istituto Nanoscienze-CNR, Piazza S. Silvestro 12, 56127 Pisa (Italy); Rossi, G. [Laboratorio TASC, IOM-CNR, S.S. 14km 163.5, Basovizza, 34149 Trieste (Italy); Dipartimento di Fisica, Università di Milano, via Celoria 16, 20133 Milano (Italy); Eddrief, M.; Marangolo, M. [Sorbonne Universités, UPMC Paris 06, CNRS-UMR 7588, Institut des Nanosciences de Paris, 75005, Paris (France)

    2015-12-15

    The manipulation of ferromagnetic layer magnetization via electrical pulse is driving an intense research due to the important applications that this result will have on memory devices and sensors. In this study we realized a magnetotunnel junction in which one layer is made of Galfenol (Fe{sub 1-x}Ga{sub x}) which possesses one of the highest magnetostrictive coefficient known. The multilayer stack has been grown by molecular beam epitaxy and e-beam evaporation. Optical lithography and physical etching have been combined to obtain 20x20 micron sized pillars. The obtained structures show tunneling conductivity across the junction and a tunnel magnetoresistance (TMR) effect of up to 11.5% in amplitude.

  11. Room Temperature Magnetic Barrier Layers in Magnetic Tunnel Junctions

    Energy Technology Data Exchange (ETDEWEB)

    Nelson-Cheeseman, B. B.; Wong, F. J.; Chopdekar, R. V.; Arenholz, E.; Suzuki, Y.

    2010-03-09

    We investigate the spin transport and interfacial magnetism of magnetic tunnel junctions with highly spin polarized LSMO and Fe3O4 electrodes and a ferrimagnetic NiFe2O4 (NFO) barrier layer. The spin dependent transport can be understood in terms of magnon-assisted spin dependent tunneling where the magnons are excited in the barrier layer itself. The NFO/Fe3O4 interface displays strong magnetic coupling, while the LSMO/NFO interface exhibits clear decoupling as determined by a combination of X-ray absorption spectroscopy and X-ray magnetic circular dichroism. This decoupling allows for distinct parallel and antiparallel electrode states in this all-magnetic trilayer. The spin transport of these devices, dominated by the NFO barrier layer magnetism, leads to a symmetric bias dependence of the junction magnetoresistance at all temperatures.

  12. Shot Noise in Ferromagnetic Superconductor Tunnel Junctions

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    In this paper, the superconducting order parameter and the energy spectrum of the Bogoliubov excitations are obtained from the Bogoliubov-de Gennes (BdG) equation for a ferromagnetic superconductor (FS). Taking into account the rough interface scattering effect, we calculate the shot noise and the differential conductance of the normal- metal insulator ferromagnetic superconductor junction. It is shown that the exchange energy Eh in FS can lead to splitting of the differential shot noise peaks and the conductance peaks. The energy difference between the two splitting peaks is equal to 2Eh. The rough interface scattering strength results in descent of conductance peaks and the shot noise-to-current ratio but increases the shot noise.

  13. A Model for the Behavior of Magnetic Tunnel Junctions

    Energy Technology Data Exchange (ETDEWEB)

    Bryan John Baker

    2003-08-05

    A magnetic tunnel junction is a device that changes its electrical resistance with a change in an applied magnetic field. A typical junction consists of two magnetic electrodes separated by a nonmagnetic insulating layer. The magnetizations of the two electrodes can have two possible extreme configurations, parallel and antiparallel. The antiparallel configuration is observed to have the higher measured resistance and the parallel configuration has the lower resistance. To switch between these two configurations a magnetic field is applied to the device which is primarily used to change the orientation of the magnetization of one electrode usually called the free layer, although with sufficient high magnetic field the orientation of the magnetizations of both of the electrodes can be changed. The most commonly used models for describing and explaining the electronic behavior of tunnel junctions are the Simmons model and the Brinkman model. However, both of these models were designed for simple, spin independent tunneling. The Simmons model does not address the issue of applied magnetic fields nor does it address the form of the electronic band structure in the metallic electrodes, including the important factor of spin polarization. The Brinkman model is similar, the main difference between the two models being the shape of the tunneling barrier potential between the two electrodes. Therefore, the research conducted in this thesis has developed a new theoretical model that addresses these important issues starting from basic principles. The main features of the new model include: the development of equations for true spin dependent tunneling through the insulating barrier, the differences in the orientations of the electrode magnetizations on either side of the barrier, and the effects of the density of states function on the behavior of the junction. The present work has explored densities of states that are more realistic than the simplified free electron density

  14. Tunnel Magnetoresistance of a Single-Molecule Junction

    OpenAIRE

    Saffarzadeh, Alireza

    2008-01-01

    Based on the non-equilibrium Green's function (NEGF) technique and the Landauer-B\\"{u}ttiker theory, the possibility of a molecular spin-electronic device, which consists of a single C$_{60}$ molecule attached to two ferromagnetic electrodes with finite cross sections, is investigated. By studying the coherent spin-dependent transport through the energy levels of the molecule, it is shown that the tunnel magnetoresistance (TMR) of the molecular junction depends on the applied voltages and the...

  15. MOLECULAR-SCALE ORGANIC ELECTROLUMINESCENCE FROM TUNNEL JUNCTIONS

    OpenAIRE

    Z. C. DONG; Guo, X. L.; Wakayama, Y.; Hou, J. G.

    2006-01-01

    We report the generation and detection of bipolar organic electroluminescence of porphyrin molecules from a nanoscale junction in an ultrahigh vacuum scanning tunneling microscope (STM). Clear molecular fluorescence from porphyrin molecules near metal substrates has been realized through highly localized electrical excitation of molecules in proximity to a sharp tip apex. The molecular origin of the luminescence, arising from the highest occupied molecular orbital–lowest unoccupied molecular ...

  16. Magnetoresistance and spin-transfer torque in magnetic tunnel junctions

    OpenAIRE

    Sun, J. Z.; Ralph, D. C.

    2008-01-01

    We comment on both recent progress and lingering puzzles related to research on magnetic tunnel junctions (MTJs). MTJs are already being used in applications such as magnetic-field sensors in the read heads of disk drives, and they may also be the first device geometry in which spin-torque effects are applied to manipulate magnetic dynamics, in order to make nonvolatile magnetic random access memory. However, there remain many unanswered questions about such basic properties as the magnetores...

  17. Magnetostatic interactions in artificial ferrimagnet based magnetic tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Tiusan, C.; Dimopoulos, T.; Buda, L.; Da Costa, V.; Ounadjela, K.; Hehn, M.; van den Berg, H.

    2001-06-01

    Magnetostatic interactions between the soft and the hard magnetic electrodes in magnetic tunnel junctions (MTJs) using artificial ferrimagnets (AFis) are analyzed. We attribute these interactions to the dispersion fields associated to magnetic inhomogeneities arising from domain walls due to local anisotropic ordering. These magnetostatic interactions can be controlled by adjusting the net magnetic moment of the AFi to optimize the magnetotransport response of the MTJ devices.{copyright} 2001 American Institute of Physics.

  18. An x-ray detector using superconducting aluminum tunnel junctions

    International Nuclear Information System (INIS)

    We report on tests of a prototype detector for 6-keV X-rays, using series arrays of tunnel junction. Tests with higher-energy particles indicate an energy resolution of 4 keV, at 0.3K and with a warm pre-amp. At lower temperatures and with a cooled FET, the resolution should approach 100 eV

  19. Fluxon dynamics in long annular Josephson tunnel junctions

    OpenAIRE

    Martucciello, N.; Mygind, Jesper; Koshelets, V. P.; Shchukin, A. V.; Filippenko, L.; Monaco, R.

    1998-01-01

    Single-fluxon dynamics has been experimentally investigated in high-quality Nb/Al-AlOx/Nb annular Josephson tunnel junctions having a radius much larger than the Josephson penetration depth. Strong evidence of self-field effects is observed. An external magnetic field in the barrier plane acts on the fluxon as a periodic potential and lowers its average speed. Further, the results of perturbative calculations do not fit the experimental current-voltage profile and, provided the temperature is...

  20. Multiple frequency generation by bunched solitons in Josephson tunnel junctions

    DEFF Research Database (Denmark)

    Lomdahl, P. S.; Sørensen, O. H.; Christiansen, Peter Leth; Scott, A. C.; Eilbeck, J. C.

    1981-01-01

    A detailed numerical study of a long Josephson tunnel junction modeled by a perturbed sine-Gordon equation demonstrates the existence of a variety of bunched soliton configurations. Thus, on the third zero-field step of the V-I characteristic, two simultaneous adjacent frequencies are generated in...... a narrow bias current range. The analysis of the soliton modes provides an explanation of recent experimental observations....

  1. Simulation of Tunnel Junction in Cascade Solar Cell (GaAs/Ge Using AMPS-1D

    Directory of Open Access Journals (Sweden)

    Benmoussa Dennai

    2014-11-01

    Full Text Available The development of the tunnel junction interconnect was key the first two-terminal monolithic, multi-junction solar cell development. This paper describes simulation for the tunnel junction (GaAs between top cell (GaAs and bottom cell (Ge. This solar cell cascade was simulated when using one dimensional simulation program called analysis of microelectronic and photonic structures (AMPS-1D. In the simulation, the thickness of the tunnel junction layer was varied from 10 to 50 nm. By varying thickness of tunnel junction layer the simulated device performance was demonstrate in the form of current-voltage(I-V characteristics and quantum efficiency (QE.

  2. Quantitative mapping of fast voltage pulses in tunnel junctions by plasmonic luminescence

    Science.gov (United States)

    Grosse, Christoph; Etzkorn, Markus; Kuhnke, Klaus; Loth, Sebastian; Kern, Klaus

    2013-10-01

    An optical read-out technique is demonstrated that enables mapping the time-dependent electrostatic potential in the tunnel junction of a scanning tunneling microscope with millivolt and nanosecond accuracy. We measure the time-dependent intensity of plasmonic light emitted from the tunnel junction upon excitation with a nanosecond voltage pulse. The light intensity is found to be a quantitative measure of the voltage between tip and sample. This permits non-invasive mapping of fast voltage transients directly at the tunnel junction. Knowledge of the pulse profile reaching the tunnel junction is applied to optimize the experiment's time response by actively shaping the incident pulses.

  3. Analysis of astronomical data from optical superconducting tunnel junctions

    CERN Document Server

    De Bruijne, J H J; Perryman, M A C; Favata, F; Peacock, A; Bruijne, Jos H.J. de; Reynolds, Alastair P; Perryman, Michael .A.C.; Favata, Fabio; Peacock, Anthony

    2001-01-01

    Currently operating optical superconducting tunnel junction (STJ) detectors, developed in ESA, can simultaneously measure the wavelength (delta lambda = 50 nm at 500 nm) and arrival time (to within ~5 micros) of individual photons in the range 310-720 nm with an efficiency of ~70%, and with count rates of order 5,000 photons per second per junction. A number of STJ junctions placed in an array format generates four-dimensional data: photon arrival time, energy, and array element (X,Y). Such STJ cameras are ideally suited for, e.g., high time- resolution spectrally-resolved monitoring of variable sources or low-resolution spectroscopy of faint extragalactic objects. The reduction of STJ data involves detector efficiency correction, atmo- spheric extinction correction, sky background subtraction, and, unlike that of data from CCD-based systems, a more complex energy calibration, barycentric arrival time correction, energy range selection, and time binning; these steps are, in many respects, analogous to procedu...

  4. Scale invariance of a diode-like tunnel junction

    Science.gov (United States)

    Cabrera, Hugo; Zanin, Danilo Andrea; de Pietro, Lorenzo Giuseppe; Michaels, Thomas; Thalmann, Peter; Ramsperger, Urs; Vindigni, Alessandro; Pescia, Danilo

    2013-03-01

    In Near Field-Emission SEM (NFESEM), electrostatic considerations favor a diode-like tunnel junction consisting of an atomic-sized source mounted at the apex of a thin wire placed at nanometric distances from a collector. The quantum mechanical tunnel process, instead, can provide a barrier toward miniaturization. In the first place, it deteriorates the generation of electrons by introducing non-linearities within the classically forbidden zone that exponentially increase with decreasing sizes. In addition, in the direct tunnelling regime, i.e. when the distance between emitter and collector d approaches the subnanometer range, a characteristic length appears, making the cross-over from the (almost) scale-invariant electric-field assisted regime to the essentially different STM-regime. We have observed that the experimental data relating the current I to the two experimental variables V (bias voltage between tip and collector) and d can be made (almost) collapse onto a ``scaling curve'' relating I to the single variable V .d-λ , λ being some exponent that depends solely on the geometry of the junction. This scaling property can be used to highlight non-linear aspects of the quantum mechanical tunnelling process.

  5. High frequency detectors based on superconducting tunnel junctions

    International Nuclear Information System (INIS)

    This review discusses high frequency detectors, in particular two examples: the quasiparticle mixer and the inductively shunted Josephson parametric amplifier. The quasiparticle mixer is now routinely operated at several radio astronomy observatories. At high frequency, in the quantum limit, photon assisted tunneling sets in and the mixer gives conversion gain. Its noise temperature is close to the ultimate quantum limit. The use of the mixer is steadily pushed upwards in frequency into the mm (and sub-mm) band. The authors discuss several high frequency obstacles: Josephson noise, Josephson interference, pair breaking, a finite number of photon assisted tunneling steps within the gap region, matching, and non-equilibrium superconductivity. A scale type experiment and modeling indicate that good conversion and low noise are possible at least up to the superconducting gap frequency. Arrays of tunnel junctions enable a higher signal saturation level of the mixer, easier-impedance match, tuning and fabrication, and a better electrical shock resistance

  6. Advanced Metrology for Characterization of Magnetic Tunnel Junctions

    DEFF Research Database (Denmark)

    Kjær, Daniel

    -plane tunneling (CIPT) for characterization of magnetic tunnel junctions (MTJs), which constitutes the key component not only in MRAM but also the read-heads of modern hard disk drives. MTJs are described by their tunnel magnetoresistance (TMR), which is the relative difference of the resistance area products (RA...... may effectively increases the dynamic range of any given micro 12-point probe (M12PP). Without the requirement for switching magnetic fields during measurements the static field CIPT method has inspired the concept of detached magnet setups for future CIPTech tools. While lowering the complexity of......) at two characteristic resistance levels (high and low) of the MTJ device. In the final memory application these resistance states correspond to a digital “1” or “0” stored. During CIPT measurements the tool will alter the state of the MTJ by application of an external magnetic field. With the CIPTech...

  7. Scaling of electroresistance effect in fully integrated ferroelectric tunnel junctions

    Science.gov (United States)

    Abuwasib, Mohammad; Lu, Haidong; Li, Tao; Buragohain, Pratyush; Lee, Hyungwoo; Eom, Chang-Beom; Gruverman, Alexei; Singisetti, Uttam

    2016-04-01

    Systematic investigation of the scalability for tunneling electroresistance (TER) of integrated Co/BaTiO3/SrRuO3 ferroelectric tunnel junctions (FTJs) has been performed from micron to deep submicron dimensions. Pulsed measurements of the transient currents confirm the ferroelectric switching behavior of the FTJs, while the hysteresis loops measured by means of piezoresponse force microscopy verify the scalability of these structures. Fully integrated functional FTJ devices with the size of 300 × 300 nm2 exhibiting a tunneling electroresistance (TER) effect of the order of 2.7 × 104% have been fabricated and tested. Measured current density of 75 A/cm2 for the ON state and a long polarization retention time of ON state (>10 h) show a lot of promise for implementation of high-density BaTiO3-based FTJ memory devices in future.

  8. Nanomanipulation and Lithography: The Building (and Modeling) of Carbon Nanotube Magnetic Tunnel Junctions

    Science.gov (United States)

    Louie, Richard Nam

    2002-12-01

    Aircraft fuselages suffer alternating stress during takeoffs and landings, and fatigue cracks begin to grow, usually at rivet holes. The detection of these fatigue cracks under installed fasteners in aging aircraft is a major goal of the nondestructive evaluation (NDE) community. The use of giant magnetoresistance (GMR) sensors in electromagnetic (EM) NDE has been increasing rapidly. For example, here at Langley Research Center, a Rotating Probe System (RPS) containing a GMR element has been incorporated into a product to detect deeply buried flaws in aerospace structures. In order to advance this eddy current probe application and many similar ones, research to create smaller, more sensitive and energy-efficient EM sensors has been aggressively pursued. Recent theoretical and experimental work on spin coherent transport supports the feasibility of carbon nanotube (CNT) based magnetic tunnel junctions. In this study, a spatial filtering scheme is presented that improves the signal to noise ratio of the RPS and does not significantly impact the number of false alarms. Signals due to buried flaws occur at higher frequencies than do signals due to rivet tilt or probe misalignment, and the strategy purposefully targets this fact. Furthermore, the spatial filtering scheme exploits decreases in the probe output that are observed immediately preceding and following the peak in output due to a fatigue crack. Using the new filters, an enhanced probability of flaw detection is expected. In the future, even tinier, more sensitive, low-power sensors are envisioned for the rotating probe and other nondestructive inspection systems. These may be comprised of single-walled carbon nanotubes (SWCNTs) that connect two ferromagnetic (FM) electrodes. Theoretical work has been done at Langley to model the electrical and magnetoconductance behavior of such junctions, for systems containing short "armchair" nanotubes. The present work facilitates the modeling of more realistic system

  9. FeGa/MgO/Fe/GaAs(001) magnetic tunnel junction: Growth and magnetic properties

    International Nuclear Information System (INIS)

    Research on spintronics and on multiferroics leads now to the possibility of combining the properties of these materials in order to develop new functional devices. Here we report the integration of a layer of magnetostrictive material into a magnetic tunnel junction. A FeGa/MgO/Fe heterostructure has been grown on a GaAs(001) substrate by molecular beam epitaxy (MBE) and studied by X-ray magnetic circular dichroism (XMCD). The comparison between magneto optical Kerr effect (MOKE) measurements and hysteresis performed in total electron yield allowed distinguishing the ferromagnetic hysteresis loop of the FeGa top layer from that of the Fe buried layer, evidencing a different switching field of the two layers. This observation indicates an absence of magnetic coupling between the two ferromagnetic layers despite the thickness of the MgO barrier of only 2.5 nm. The in-plane magnetic anisotropy has also been investigated. Overall results show the good quality of the heterostructure and the general feasibility of such a device using magnetostrictive materials in magnetic tunnel junction

  10. FeGa/MgO/Fe/GaAs(001) magnetic tunnel junction: Growth and magnetic properties

    Energy Technology Data Exchange (ETDEWEB)

    Gobaut, B., E-mail: benoit.gobaut@elettra.eu [Sincrotrone Trieste S.C.p.A., S.S. 14-km 163.5, Area Science Park, 34012 Trieste (Italy); Ciprian, R.; Salles, B.R.; Krizmancic, D. [Laboratorio TASC, IOM-CNR, S.S. 14-km 163.5, Basovizza, 34149 Trieste (Italy); Rossi, G. [Laboratorio TASC, IOM-CNR, S.S. 14-km 163.5, Basovizza, 34149 Trieste (Italy); Dipartimento di Fisica, Università di Milano, via Celoria 16, 20133 Milano (Italy); Panaccione, G. [Laboratorio TASC, IOM-CNR, S.S. 14-km 163.5, Basovizza, 34149 Trieste (Italy); Eddrief, M.; Marangolo, M. [Sorbonne Universites, UPMC Univ Paris 06, UMR 7588, INSP, 4 place Jussieu, 75005 Paris (France); CNRS, UMR 7588, Institut des NanoSciences de Paris, 4 place Jussieu, 75005 Paris (France); Torelli, P. [Laboratorio TASC, IOM-CNR, S.S. 14-km 163.5, Basovizza, 34149 Trieste (Italy)

    2015-06-01

    Research on spintronics and on multiferroics leads now to the possibility of combining the properties of these materials in order to develop new functional devices. Here we report the integration of a layer of magnetostrictive material into a magnetic tunnel junction. A FeGa/MgO/Fe heterostructure has been grown on a GaAs(001) substrate by molecular beam epitaxy (MBE) and studied by X-ray magnetic circular dichroism (XMCD). The comparison between magneto optical Kerr effect (MOKE) measurements and hysteresis performed in total electron yield allowed distinguishing the ferromagnetic hysteresis loop of the FeGa top layer from that of the Fe buried layer, evidencing a different switching field of the two layers. This observation indicates an absence of magnetic coupling between the two ferromagnetic layers despite the thickness of the MgO barrier of only 2.5 nm. The in-plane magnetic anisotropy has also been investigated. Overall results show the good quality of the heterostructure and the general feasibility of such a device using magnetostrictive materials in magnetic tunnel junction.

  11. Giant tunnel magneto-resistance in graphene based molecular tunneling junction

    Science.gov (United States)

    Wang, Bin; Li, Jianwei; Yu, Yunjin; Wei, Yadong; Wang, Jian; Guo, Hong

    2016-02-01

    We propose and theoretically investigate a class of stable zigzag graphene nanoribbon (ZGNR) based molecular magnetic tunneling junctions (MTJs). For those junctions having pentagon-connecting formations, huge tunnel magneto-resistance (TMR) is found. Different from most of the other proposed molecular junctions, the huge TMR in our structures is generic, and is not significantly affected by external parameters such as bias voltage, gate voltage, length of the molecule and width of the ZGNRs. The double pentagon-connecting formation between the molecule and ZGNRs is critical for the remarkable TMR ratio, which is as large as ~2 × 105. These molecular MTJs behave as almost perfect spin filters and spin valve devices. Other connecting formations of the ZGNR based MTJs lead to much smaller TMR. By first principles analysis, we reveal the microscopic physics responsible for this phenomenon.

  12. Spin tunneling in Co/Au/I/BiSrCaCuO tunnel junctions

    International Nuclear Information System (INIS)

    Conductance spectra of Co/Au/I/Bi2Sr2CaCu2Ox+8(BSCCO) tunnel junctions have been measured to investigate the tunneling of spin polarized quasiparticles. BSCCO thin films prepared by molecular beam epitaxy are used for the Co/Au/I/BSCCO tunnel junctions because those have flat surface without any large steps as observed on the cleaved surface of single crystals. The superconducting gap is clearly observed in the conductance spectra at the temperature below the critical temperature Tc. In addition, a splitting of the zero bias conductance peak and the imbalance of the peak heights are observed. This feature is induced by the spin polarization of quasiparticles injected into the superconductors. [copyright] 2001 American Institute of Physics

  13. Inelastic electron tunnelling and noise spectroscopies in organic magnetic tunnel junctions with PTCDA barrier

    Science.gov (United States)

    Aliev, Farkhad; Martinez, Isidoro; Hong, Jhen-Yong; Cascales, Juan Pedro; Andres, Pablo; Lin, Minn-Tsong

    2015-03-01

    The influence of internal barrier dynamics on spin, charge transport and their fluctuations in organic spintronics remains poorly understood. Here we present inelastic electron tunnelling spectroscopy (IETS) and low frequency noise (LFN) studies in magnetic tunnel junctions with thin (1.2-5nm) organic PTCDA barriers in the tunnelling regime at temperatures down to 0.3K. Shot noise is superpoissonian with a Fano factor exceeding in 1.5-2 times the maximum values reported for magnetic tunnel junctions with inorganic barriers, indicating spin dependent bunching in tunneling. IETS results show energy relaxation of tunneling electrons through the excitation of collective (librons) and internal (phonons) vibrational modes of the molecules. The bias dependence of the normalised 1/f noise studied up to 350mV reveals that the excitation of some phonon modes has a strong impact on LFN with over a 10-fold reproducible increase near some specific biases. The dependence of the IETS and LFN anomalies with the relative magnetic alignment of the electrodes will also be discussed.

  14. Static and dynamic aspects of spin tunnelling in crystalline magnetic tunnel junctions

    International Nuclear Information System (INIS)

    Single-crystal magnetic tunnel junctions employing bcc (100) Fe electrodes and MgO(100) insulating barrier are elaborated by molecular beam epitaxy. The magneto-transport properties are investigated in two extreme regimes. First, for extremely small MgO thickness, we show that the equilibrium tunnel transport in Fe/MgO/Fe systems leads to antiferromagnetic interactions, mediated by the tunnelling of the minority spin interfacial resonance state. Second, for large MgO barrier thickness, the tunnel transport validates specific spin filtering effects in terms of symmetry of the electronic Bloch function and symmetry-dependent wavefunction attenuation in the single-crystal barrier. Within this framework, we present giant tunnel magnetoresistive effects at room temperature (125-160%). Moreover, we illustrate that the interfacial chemical and electronic structure plays a crucial role in the spin filtering. We point out imperfect filtering effects and a strong implication of the minority surface state of Fe on the low voltage variation of tunnel magnetoresistance. The insertion of carbon impurities at the Fe/MgO interface changes radically the voltage response of the tunnel magnetoresistance and activates a resonant tunnelling mechanism via the interfacial resonance state

  15. Time-to-breakdown characteristics of magnetic tunnel junctions

    International Nuclear Information System (INIS)

    To investigate the reliability of the MTJs on the roughness of insulating tunnel barrier, we prepared two MTJs with the different uniformity of barrier thickness. Namely, the one has uniform insulating barrier thickness; the other has non-uniform insulating barrier thickness as compared to different thing. As to depositing amorphous layer CoZrNb under the pinning layer IrMn, we achieved MTJ with uniform barrier thickness. First of all, we performed the breakdown-voltage measurement of two junctions and obtained the result having a similar breakdown-voltage about 1.4 V at two all junctions. And then, the time dependence dielectric breakdown (TDDB) measurements of two junctions are carried out under constant voltage stresses. The Weibull fit of our data shows clearly that time to breakdown (tBD) scales with the thickness uniformity of tunnel barrier. And also, Assuming a linear dependence of log(tBD) on stress voltages, we meet with result about the different lifetime of the two MTJs with uniform barrier thickness or non-uniform barrier thickness. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  16. Time-to-breakdown characteristics of magnetic tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Hwang, Jae Youn; Rhee, Jang Roh [Department of Physics, Sookmyung Women' s University, Seoul 140-742 (Korea); Kim, Taewan; Park, Wanjun [Materials and Devices Laboratory, Samsung Advanced Institute of Technology, Gyeonggi-Do 449-711 (Korea); Jang, YoungMan; Cho, B.K. [Superconducting and Magnetic Materials Laboratory, GwangJu Institute of Science and Technology, Gwangju 500-712 (Korea)

    2004-12-01

    To investigate the reliability of the MTJs on the roughness of insulating tunnel barrier, we prepared two MTJs with the different uniformity of barrier thickness. Namely, the one has uniform insulating barrier thickness; the other has non-uniform insulating barrier thickness as compared to different thing. As to depositing amorphous layer CoZrNb under the pinning layer IrMn, we achieved MTJ with uniform barrier thickness. First of all, we performed the breakdown-voltage measurement of two junctions and obtained the result having a similar breakdown-voltage about 1.4 V at two all junctions. And then, the time dependence dielectric breakdown (TDDB) measurements of two junctions are carried out under constant voltage stresses. The Weibull fit of our data shows clearly that time to breakdown (t{sub BD}) scales with the thickness uniformity of tunnel barrier. And also, Assuming a linear dependence of log(t{sub BD}) on stress voltages, we meet with result about the different lifetime of the two MTJs with uniform barrier thickness or non-uniform barrier thickness. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  17. On the Interfacial Tunneling Current in Nanoscale Plasmonic Junctions

    Science.gov (United States)

    Lau, Y. Y.; Zhang, Peng; Gilgenbach, R. M.

    2015-11-01

    Recently, electron tunneling between plasmonic resonators is found to support quantum plasmon resonances, which may introduce new regimes in nano-optoelectronics and nonlinear optics. This is a fundamental problem of electron transport in nano-scale. Here, we present a self-consistent model of electron transport in a nano-scale metal-insulator (vacuum)-metal junction, by solving the coupled Schrödinger and Poisson equations. The effects of space charge, exchange-correlation, anode emission, and material properties of the electrodes and insulator are examined in detail. It is found that these effects may modify the current density by orders of magnitude from the widely used Simmons' formula. Transition from the direct tunneling regime to the space-charge-limited regime is demonstrated. For a given junction, simply increasing the driving field to field emission or space-charge-limited regime could significantly reduce the damping of the charge transfer plasmon due to quantum tunneling. This work was supported by AFOSR Grant No. FA9550-14-1-0309.

  18. Retention time in multiple-tunnel junction memory device

    Science.gov (United States)

    Jalil, M. B. A.; Wagner, M.; Ahmed, H.

    1999-01-01

    A computationally inexpensive approximation is obtained for the retention time of charges stored on a memory node of a multiple-tunnel junction (MTJ) memory device, based on previous simplifying assumptions by Jensen and Martinis. The approximation takes into account both thermally assisted single electron tunneling and higher order processes, or cotunneling and is in good agreement with a full master equation simulation of the device up to a temperature T≈T0/10, where T0=e2/kBC. For the case of a memory device formed within a δ-doped layer in GaAs, it is predicted that leakage due to single tunneling starts to dominate over cotunneling at temperatures above T≈T0/60, and that a sharp reduction in retention time occurs above T≈T0/100. Our analysis also shows that with the typical dimensions of present devices, a memory lifetime of a year requires the stringent condition of an 11-junction MTJ operated at below 1 K.

  19. Quantum tunneling of the magnetic moment in the S/F/S Josephson φ0 junction

    Science.gov (United States)

    Chudnovsky, Eugene M.

    2016-04-01

    We show that the S/F/S Josephson φ0 junction permits detection of macroscopic quantum tunneling and quantum oscillation of the magnetic moment by measuring the ac voltage across the junction. Exact expression for the tunnel splitting renormalized by the interaction with the superconducting order parameter is obtained. It is demonstrated that magnetic tunneling may become frozen at a sufficiently large φ0. The quality factor of quantum oscillations of the magnetic moment due to finite ohmic resistance of the junction is computed. It is shown that magnetic tunneling rate in the φ0 junction can be controlled by the bias current, with no need for the magnetic field.

  20. Resonant tunnel magnetoresistance in double-barrier planar magnetic tunnel junctions

    KAUST Repository

    Useinov, A. N.

    2011-08-24

    We present a theoretical approach to calculate the spin-dependent current and tunnel magnetoresistance (TMR) in a double-barrier magnetic tunnel junction (DMTJ), in which the magnetization of the middle ferromagnetic metal layer can be aligned parallel or antiparallel in relation to the fixed magnetizations of the left and right ferromagnetic electrodes. The electron transport through the DMTJ is considered as a three-dimensional problem, taking into account all transmitting electron trajectories as well as the spin-dependent momentum conservation law. The dependence of the transmission coefficient and spin-polarized currents on the applied voltage is derived as an exact solution to the quantum-mechanical problem for the spin-polarized transport. In the range of the developed physical model, the resonant tunneling, nonresonant tunneling, and enhanced spin filtering can be explained; the simulation results are in good agreement with experimental data.

  1. A Review of the CMOS Buried Double Junction (BDJ Photodetector and its Applications

    Directory of Open Access Journals (Sweden)

    Gabriel Vasilescu

    2008-10-01

    Full Text Available A CMOS Buried Double Junction PN (BDJ photodetector consists of two vertically-stacked photodiodes. It can be operated as a photodiode with improved performance and wavelength-sensitive response. This paper presents a review of this device and its applications. The CMOS implementation and operating principle are firstly described. This includes the description of several key aspects directly related to the device performances, such as surface reflection, photon absorption and electron-hole pair generation, photocurrent and dark current generation, etc. SPICE modelling of the detector is then presented. Next, design and process considerations are proposed in order to improve the BDJ performance. Finally, several BDJ-detector-based image sensors provide a survey of their applications.

  2. Spin nutation effects in molecular nanomagnet-superconductor tunnel junctions.

    Science.gov (United States)

    Abouie, J; Abdollahipour, B; Rostami, A A

    2013-11-20

    We study the spin nutation effects of a molecular nanomagnet on the Josephson current through a superconductor|molecular nanomagnet|superconductor tunnel junction. We explicitly demonstrate that, due to the spin nutation of the molecular nanomagnet, two oscillatory terms emerge in the ac Josephson current in addition to the conventional ac Josephson current. Some resonances occur in the junction due to the interactions of the transported quasiparticles with the bias voltage and molecular nanomagnet spin dynamics. Their appearance indicates that the energy exchanged during these interactions is in the range of the superconducting energy gap. We also show that the spin nutation is able to convert the ac Josephson current to a dc current, which is interesting for applications. PMID:24129308

  3. Spin nutation effects in molecular nanomagnet–superconductor tunnel junctions

    International Nuclear Information System (INIS)

    We study the spin nutation effects of a molecular nanomagnet on the Josephson current through a superconductor|molecular nanomagnet|superconductor tunnel junction. We explicitly demonstrate that, due to the spin nutation of the molecular nanomagnet, two oscillatory terms emerge in the ac Josephson current in addition to the conventional ac Josephson current. Some resonances occur in the junction due to the interactions of the transported quasiparticles with the bias voltage and molecular nanomagnet spin dynamics. Their appearance indicates that the energy exchanged during these interactions is in the range of the superconducting energy gap. We also show that the spin nutation is able to convert the ac Josephson current to a dc current, which is interesting for applications. (paper)

  4. Encoding, training and retrieval in ferroelectric tunnel junctions

    Science.gov (United States)

    Xu, Hanni; Xia, Yidong; Xu, Bo; Yin, Jiang; Yuan, Guoliang; Liu, Zhiguo

    2016-05-01

    Ferroelectric tunnel junctions (FTJs) are quantum nanostructures that have great potential in the hardware basis for future neuromorphic applications. Among recently proposed possibilities, the artificial cognition has high hopes, where encoding, training, memory solidification and retrieval constitute a whole chain that is inseparable. However, it is yet envisioned but experimentally unconfirmed. The poor retention or short-term store of tunneling electroresistance, in particular the intermediate states, is still a key challenge in FTJs. Here we report the encoding, training and retrieval in BaTiO3 FTJs, emulating the key features of information processing in terms of cognitive neuroscience. This is implemented and exemplified through processing characters. Using training inputs that are validated by the evolution of both barrier profile and domain configuration, accurate recalling of encoded characters in the retrieval stage is demonstrated.

  5. Nonlinear spin current and magnetoresistance of molecular tunnel junctions.

    Science.gov (United States)

    Waldron, Derek; Haney, Paul; Larade, Brian; MacDonald, Allan; Guo, Hong

    2006-04-28

    We report on a theoretical study of spin-polarized quantum transport through a Ni-bezenedithiol(BDT)-Ni molecular magnetic tunnel junction (MTJ). Our study is based on carrying out density functional theory within the Keldysh nonequilibrium Green's function formalism, so that microscopic details of the molecular MTJ are taken into account from first principles. A magnetoresistance ratio of approximately 27% is found for the Ni-BDT-Ni MTJ which declines toward zero as bias voltage is increased. The spin currents are nonlinear functions of bias voltage, even changing sign at certain voltages due to specific features of the coupling between molecular states and magnetic leads. PMID:16712257

  6. Molecular-based electronically switchable tunnel junction devices.

    Science.gov (United States)

    Collier, C P; Jeppesen, J O; Luo, Y; Perkins, J; Wong, E W; Heath, J R; Stoddart, J F

    2001-12-19

    Solid-state tunnel junction devices were fabricated from Langmuir Blodgett molecular monolayers of a bistable [2]catenane, a bistable [2]pseudorotaxane, and a single-station [2]rotaxane. All devices exhibited a (noncapacitive) hysteretic current-voltage response that switched the device between high- and low-conductivity states, although control devices exhibited no such response. Correlations between the structure and solution-phase dynamics of the molecular and supramolecular systems, the crystallographic domain structure of the monolayer film, and the room-temperature device performance characteristics are reported. PMID:11741428

  7. Ferroelectric control of anisotropic damping in multiferroic tunnel junctions

    Science.gov (United States)

    Wang, Yan; Zhang, Ning; Berakdar, Jamal; Jia, Chenglong

    2015-10-01

    The magnetoelectric effect on nonlocal magnetization dynamics is theoretically investigated in normal-metal/ferroelectric-insulator/ferromagnetic tunnel junctions. In addition to the Rashba spin-orbit interaction (SOI) originating from loss of parity symmetry at the interfaces, the topology of interfacial spiral spins triggered by ferroelectric polarization acts with an effective SOI that is electrically controllable. These spin-dependent interactions result in an anisotropic Gilbert damping with C2 v symmetry. The findings are of a direct relevance for the utilization of composite multiferroics for devices that rely on electrically controlled magnetic switching.

  8. Development of Superconducting Tunnel Junction as an Imaging Radiation Detector

    Science.gov (United States)

    Yamasaki, N. Y.; Rokutanda, E.; Kikuchi, K.; Kushino, A.; Ohashi, T.; Kurakado, M.

    Superconducting tunnel junctions (STJs) as X-ray detectors have been developed mainly aiming at high resolution spectrometers. We archived an energy resolution of 106 eV at 5.9 keV (FWHM) using an STJ developed at Nippon Steel Corporation with a cooled (~ 100K) FET. Furthermore, series-connected STJs as an imaging radiation detector are developed. Both the pulse hight and the rise time of signals from 241Am α-particles irradiated on a series-connected STJ give a good position sensitivity, indicating the intrinsic position resolution less than 0.5 mm

  9. Intrinsic spin noise in MgO magnetic tunnel junctions

    OpenAIRE

    Delgado Acosta, Fernando; K. Lopez; Ferreira, R.; Fernández Rossier, Joaquín

    2012-01-01

    We consider two intrinsic sources of noise in ultra-sensitive magnetic field sensors based on MgO magnetic tunnel junctions, coming both from $^{25}$Mg nuclear spins ($I=5/2$, 10% natural abundance), and S=1 Mg-vacancies. While nuclear spins induce noise peaked in the MHz frequency range, the vacancies noise peaks in the GHz range. We find that the nuclear noise in submicron devices has a similar magnitude than the $1/f$ noise, while the vacancy-induced noise dominates in the GHz range. Inter...

  10. Increased Gilbert damping in spin valves and magnetic tunnel junctions

    International Nuclear Information System (INIS)

    We present a study on the Gilbert damping constant α in magnetic multilayers using the time-resolved MOKE technique. All observed α-values in Ni80Fe20 thin films with Cu/Ta seed and capping layers can be modeled using a spin pumping model. Investigation in device layers (spin-valves and magnetic tunnel junctions) is consistent with this model. An additional effect of the magnetization state of the pinned layer on free layer damping in spin valves is seen. These insights in the effect of interfaces on magnetic relaxation provide methods for optimization of magnetic devices for numerous high-speed applications

  11. Thermally activated magnetization reversal in magnetic tunnel junctions

    Institute of Scientific and Technical Information of China (English)

    Zhou Guang-Hong; Wang Yin-Gang; Qi Xian-Jin; Li Zi-Quan; Chen Jian-Kang

    2009-01-01

    In this paper, the magnetization reversal of the ferromagnetic layers in the lrMn/CoFe/AlOx/CoFe magnetic tunnel junction has been investigated using bulk magnetometry. The films exhibit very complex magnetization processes and reversal mechanism. Thermal activation phenomena such as the training effect, the asymmetry of reversal, the loop broadening and the decrease of exchange field while holding the film at negative saturation have been observed on the hysteresis loops of the pinned ferromagnetic layer while not on those of the free ferromagnetic layer. The thermal activation phenomena observed can be explained by the model of two energy barrier distributions with different time constants.

  12. NbN/MgO/NbN SIS tunnel junctions for submm wave mixers

    Science.gov (United States)

    Stern, J. A.; Hunt, B. D.; Leduc, H. G.; Judas, A.; Mcgrath, W. R.; Cypher, S. R.; Khanna, S. K.

    1989-01-01

    The authors report on the fabrication and testing of all-refractory NbN/MgO/NbN SIS (superconductor-insulator-superconductor) tunnel junctions for use as high-frequency mixers. Progress in the development of techniques for the fabrication of submicron-area tunnel junctions is described. Junction structures which have been investigated include mesa, crossline, and edge geometries. Using reactive sputtering techniques, NbN tunnel junctions with critical currents in excess of 104 A/sq cm have been fabricated with Vm values as high as 65 mV and areas down to 0.1 sq micron. Specific capacitance measurements on NbN/MgO/NbN mesa-type tunnel junctions give values in the range 60-90 fF/sq micron. These SIS tunnel junctions have been integrated with antennas and coupling structures for mixer tests in a waveguide receiver at 207 GHz. Preliminary mixer results are reported.

  13. Resonant tunneling in small current-biased Josephson Junctions

    Energy Technology Data Exchange (ETDEWEB)

    Schmidt, J.M.

    1994-05-01

    Effects of resonant tunneling between bound quantum states of a current-biased Josephson tunnel junction is studied both theoretically and experimentally. Several effects are predicted to arise from resonant tunneling, including a series of voltage peaks along the supercurrent branch of the current-voltage characteristic, and enhanced rate of escape from zero voltage state to voltage state at particular values of bias current. A model is developed to estimate magnitude and duration of voltage peaks, and to estimate enhancement of the escape rate, which appears as peaks in the rate as a function of bias current. An experimental investigation was carried out in an attempt to observe these predicted peaks in the escape rate distribution in a current-biased DC SQUID, which is shown to be dynamically equivalent to a Josephson junction with adjustable critical current. Electrical contact to each SQUID (fabricated from aluminium) was made through high resistance thin film leads located on the substrate. These resistors provided a high impedance at the plasma frequency which is for the isolation of the SQUID from its electromagnetic environment. Measurements were carried out on a dilution refrigerator at temperatures as low as 19 mK. No evidence was found for resonant tunneling; this is attributed to effective temperatures of hundreds of millikelvin. The behavior is well explained by a heating model where the high effective temperatures are generated by ohmic heating of the electron gas of the isolation resistors, which decouples from the phonon system (hot electron effect). The prospects for further theoretical and experimental research are discussed.

  14. PHOTON-ASSISTED TUNNELING IN DOUBLE-BARRIER SUPERCONDUCTING TUNNEL-JUNCTIONS

    NARCIS (Netherlands)

    DIERICHS, MMTM; DIELEMAN, P; WEZELMAN, JJ; HONINGH, CE; KLAPWIJK, TM

    1994-01-01

    Double-barrier Nb/Al2O3/Al/Al2O3/Nb tunnel junctions are used as mixing elements in a 345 GHz waveguide mixer. Noise temperatures (double side band) down to 720 K at 3.0 K are obtained without the need to apply a magnetic field to suppress the Josephson current. It is shown that the composite barrie

  15. Strain-enhanced tunneling magnetoresistance in MgO magnetic tunnel junctions

    OpenAIRE

    Loong, Li Ming; Qiu, Xuepeng; Neo, Zhi Peng; Deorani, Praveen; Wu, Yang; Bhatia, Charanjit S.; Saeys, Mark; Yang, Hyunsoo

    2014-01-01

    While the effects of lattice mismatch-induced strain, mechanical strain, as well as the intrinsic strain of thin films are sometimes detrimental, resulting in mechanical deformation and failure, strain can also be usefully harnessed for applications such as data storage, transistors, solar cells, and strain gauges, among other things. Here, we demonstrate that quantum transport across magnetic tunnel junctions (MTJs) can be significantly affected by the introduction of controllable mechanical...

  16. Single-walled carbon nanotube based molecular switch tunnel junctions.

    Science.gov (United States)

    Diehl, Michael R; Steuerman, David W; Tseng, Hsian-Rong; Vignon, Scott A; Star, Alexander; Celestre, Paul C; Stoddart, J Fraser; Heath, James R

    2003-12-15

    This article describes two-terminal molecular switch tunnel junctions (MSTJs) which incorporate a semiconducting, single-walled carbon nanotube (SWNT) as the bottom electrode. The nanotube interacts noncovalently with a monolayer of bistable, nondegenerate [2]catenane tetracations, self-organized by their supporting amphiphilic dimyristoylphosphatidyl anions which shield the mechanically switchable tetracations from a two-micrometer wide metallic top electrode. The resulting 0.002 micron 2 area tunnel junction addresses a nanometer wide row of approximately 2000 molecules. Active and remnant current-voltage measurements demonstrated that these devices can be reconfigurably switched and repeatedly cycled between high and low current states under ambient conditions. Control compounds, including a degenerate [2]catenane, were explored in support of the mechanical origin of the switching signature. These SWNT-based MSTJs operate like previously reported silicon-based MSTJs, but differently from similar devices incorporating bottom metal electrodes. The relevance of these results with respect to the choice of electrode materials for molecular electronics devices is discussed. PMID:14714382

  17. Minimization of the energy costs for operating magnetic tunnel junctions

    Science.gov (United States)

    Farhat, Ilyas A. H.; Gale, E.; Isakovic, A. F.

    2015-03-01

    Increasing prospects of utilizing the STT-MRAM calls for the re-assessment of the overall energy (power) cost of operating magnetic tunnel junctions and related elements. This motivates our design, nanofabrication and characterization of simple tri-layer magnetic tunnel junctions which show measurable decrease in the operating energy cost. The MTJs we report about rely on nanoengineering interfaces between the insulating and magnetic layers in such a way that the area of the hysteresis loops can be controlled in one or both magnetic layers. Our TMR coefficient ranges from 45% to 130%, depending on the MTJ layer materials, and can be anticipated to be further increased. We also report the study of the TMR dependence on the RA product, as an important interface parameter. Lastly, we present an analysis of MTJ parameters affected by our approach and a perspective on further improvements, focusing on the device design parameters relevant for the integration of this type of MTJs. This work is supported by the SRC-ATIC Grant 2012-VJ-2335. A part of this work is being performed at Cornell University CNF, a member of NNIN. We thank CNF staff for the support.

  18. Tunnel junctions for ohmic intra-device contacts on GaSb-substrates

    International Nuclear Information System (INIS)

    A tunnel junction for intradevice contacts on GaSb substrates has been realized. By using solid source molecular beam epitaxy, we have fabricated abrupt, heavily doped homo- and heterojunctions of InAs(Sb) and GaSb to form a low resistive ohmic tunnel junction. The resitivity achieved was as low as 2.6x10-5 Ω cm2

  19. Two-particle structures in high quality Nb/AlOx/Nb Josephson tunnel junctions

    International Nuclear Information System (INIS)

    We have investigated both theoretically and experimentally the two-particle structures, which appear at low temperature in high quality Nb/AlOx/Nb Josephson tunnel junctions in the subgap region of the current-voltage characteristics. We performed measurements on low Josephson critical current density junctions and the results are discussed in the framework of the multiparticle tunnel theory. (orig.)

  20. Simultaneous quasiparticle and Josephson tunneling in BSCCO-2212 break junctions.

    Energy Technology Data Exchange (ETDEWEB)

    Ozyuzer, L.

    1998-10-27

    Tunneling measurements are reported for superconductor-insulator-superconductor (SIS) break junctions on underdoped, optimally-doped, and overdoped single crystals of Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8+{delta}} (Bi-2212). The junction I-V characteristics exhibit well-defined quasiparticle current jumps at eV = 2A as well as hysteretic Josephson currents. The quasiparticle branch has been analyzed in the framework of d{sub x{sup 2}-y{sup 2}} (d-wave) superconductivity and indicates that there is preferential tunneling along the lobe directions of the d-wave gap. For overdoped Bi-2212 with T{sub c} = 62 K, the Josephson current is measured as a function of junction resistance, R{sub n}, which varied by two orders of magnitude (1 k{Omega} to 100 k{Omega}). I{sub c}R{sub n} product is proportional to the 0.47 power of I{sub c} and displays a maximum of 7.0 mV. When the hole doping is decreased from overdoped (T{sub c} = 62 K) to the underdoped regime (T{sub c} = 70 K), the average I{sub c}R{sub n} product increases as does the quasiparticle gap. The maximum I{sub c}R{sub n} is {approximately} 40% of the {Delta}/e at each doping level, with a value as high as 25 mV in underdoped Bi-2212.

  1. Magnetic coherent tunnel junctions with periodic grating barrier

    Science.gov (United States)

    Fang, Henan; Xiao, Mingwen; Rui, Wenbin; Du, Jun; Tao, Zhikuo

    2016-04-01

    A new spintronic theory has been developed for the magnetic tunnel junction (MTJ) with single-crystal barrier. The barrier will be treated as a diffraction grating with intralayer periodicity, the diffracted waves of tunneling electrons thus contain strong coherence, both in charge and especially in spin. The theory can answer the two basic problems present in MgO-based MTJs: (1) Why does the tunneling magnetoresistance (TMR) oscillate with the barrier thickness? (2) Why is the TMR still far away from infinity when the two electrodes are both half-metallic? Other principal features of TMR can also be explained and reproduced by the present work. It also provides possible ways to modulate the oscillation of TMR, and to enhance TMR so that it can tend to infinity. Within the theory, the barrier, as a periodic diffraction grating, can get rid of the confinement in width, it can vary from nanoscale to microscale. Based on those results, a future-generation MTJ is proposed where the three pieces can be fabricated separately and then assembled together, it is especially appropriate for the layered materials, e.g., MoS2 and graphite, and most feasible for industries.

  2. Noise spectroscopy of magnetic tunnel junctions with organic barriers

    Science.gov (United States)

    Aliev, Farkhad; Cascales, Juan Pedro; Hong, Jhen-Yong; Lin, Minn-Tsong

    2014-03-01

    Understanding the details of spin and charge transport through organic barriers remains one of the main challenges in organic spintronics. Here we present low frequency noise studies in magnetic tunnel junctions with thin (2-5nm) organic PTCDA barriers in the tunnelling regime, investigated at temperatures of under 1K up to 300K. Shot noise measurements show a superpoissonian contribution at low biases giving rise to a Fano factor of around 1.5-2. We tentatively link the enhanced shot noise with electron bunching induced by inelastic interaction with collective low frequency vibration modes of the molecules. On the other hand, the bias dependence of 1/f noise studied up to 350mV reveals reproducible anomalies which could be linked with excitations induced by inelastic tunnelling, due to individual vibrational modes of higher frequency of the PTCDA molecules. The dependence of the shot and 1/f noise with the magnetic alignment of the electrodes will also be discussed Supported by UAM-Santander and MAT2012-32743 grants.

  3. Ferroelectric Tunnel Junction for Dense Cross-Point Arrays.

    Science.gov (United States)

    Lee, Hong-Sub; Han, Wooje; Chung, Hee-Yoon; Rozenberg, Marcelo; Kim, Kangsik; Lee, Zonghoon; Yeom, Geun Young; Park, Hyung-Ho

    2015-10-14

    Cross-point array (CPA) structure memories using a memristor are attracting a great deal of attention due to their high density integration with a 4F2 cell. However, a common significant drawback of the CPA configuration is crosstalk between cells. To date, the CPA structure using a redox-based memristor has restrictions to minimize the operating current level due to their resistive switching mechanism. This study demonstrates suitable characteristics of a ferroelectric tunnel junction (FTJ) for the memristor of the CPA structure using an electrostatic model. From the FTJ of the Au/p-type Pr0.98Ca0.02MnO3 (4 nm)/BaTiO3 (4.3 nm)/n-type Ca0.98Pr0.02MnO3 (3 nm)/Pt(111) structure, which has a higher and thicker potential barrier, a good memristive effect for the CPA structure with a high nonlinear current-voltage curve and low current operation, was obtained by Δ Fowler-Nordheim tunneling with effectively blocked direct tunneling and thermionic emission. The FTJ demonstrated reduced sneak current and the possible for high nonlinearity. PMID:26378472

  4. Break junction tunneling spectroscopy of single-crystal bismuth-based high-temperature superconductors

    International Nuclear Information System (INIS)

    The tunneling spectra of some high temperature superconducting crystal break junctions have been measured at 4 K. The samples were thin plates of Bi2SrCa2Cu2O8 compound. The tunneling spectra (conductance versus voltage) were not typical of BCS superconductor tunneling electrodes. The spectra of higher-resistance break-junction settings (R above 1 megaohm) show a tunneling gap on top of a linearly increasing conductance background signal. 'Harmonic' dip features in the spectra of lower resistance break junction settings (R below 1 megaohm) indicated tunneling between multiple particles in the vicinity of the primary (highest resistance) contact of the junction. The dips occurred at about the same current but shifted in voltage when the resistance of the break junction was continuously adjusted to new settings. 12 refs

  5. Control of Coulomb blockade in a mesoscopic Josephson junction using single electron tunneling

    OpenAIRE

    Hassel, J.; Seppä, Heikki; Delahaye, Julien; Hakonen, Pertti J.

    2004-01-01

    We study a circuit where a mesoscopic Josephson junction (JJ) is embedded in an environment consisting of a large bias resistor and a normal metal - superconductor tunnel junction (NIS). The effective Coulomb blockade of the JJ can be controlled by the tunneling current through the NIS junction leading to transistor-like characteristics. We show using phase correlation theory and numerical simulations that substantial current gain with low current noise ($i_{n}\\lesssim 1$ fA/$\\sqrt{\\text{Hz}}...

  6. Properties of Light Emission Spectrum of Double-barrier Tunnel Junction

    Institute of Scientific and Technical Information of China (English)

    WANG Mao-xiang; NIE Li-cheng; ZHANG You-wen; YU Jian-hua

    2007-01-01

    Fabricated are the double-barrier light emission tunnel junctions successfully. Introduced are the fabrication process and light emission characteristics. The spectra of the junctions are measured and analyzed especially. Their spectrum wavelength including main wave peak(locates at 450 nm~500 nm) of the double-barrier junction shows a "blue shift" in comparison with that of the single-barrier Metal/Insulator/Semiconductor(MIS) or Metal/Insulator/Metal(MIM) junction(wave peak locates at 620 nm~740 nm). This phenomenon should be due to the occurrence of the electron resonant tunneling in the double-barrier junction.

  7. Molecular sensing with the tunnel junction of an Au nanogap in solution

    International Nuclear Information System (INIS)

    The tunnel junction of a gold nanogap was fabricated electrochemically for a molecular sensing device in solution. The tunnel junction was sensitive enough to detect the variation of a potential barrier within the nanogap, such as the chemical adsorption of molecules. By monitoring the variation of the tunneling current, which represents the change of a potential barrier due to molecular adsorption, the molecules could be detected

  8. Molecular sensing with the tunnel junction of an Au nanogap in solution.

    Science.gov (United States)

    Dong, Xiaodong; Xia, Yong; Zhu, Guoyi; Zhang, Bailin

    2007-10-01

    The tunnel junction of a gold nanogap was fabricated electrochemically for a molecular sensing device in solution. The tunnel junction was sensitive enough to detect the variation of a potential barrier within the nanogap, such as the chemical adsorption of molecules. By monitoring the variation of the tunneling current, which represents the change of a potential barrier due to molecular adsorption, the molecules could be detected. PMID:21730417

  9. Giant magnetothermopower of magnon-assisted transport in ferromagnetic tunnel junctions

    OpenAIRE

    McCann, Edward; Fal'ko, Vladimir I.

    2002-01-01

    We present a theoretical description of the thermopower due to magnon-assisted tunneling in a mesoscopic tunnel junction between two ferromagnetic metals. The thermopower is generated in the course of thermal equilibration between two baths of magnons, mediated by electrons. For a junction between two ferromagnets with antiparallel polarizations, the ability of magnon-assisted tunneling to create thermopower $S_{AP}$ depends on the difference between the size $\\Pi_{\\uparrow, \\downarrow}$ of t...

  10. Molecular sensing with the tunnel junction of an Au nanogap in solution

    Energy Technology Data Exchange (ETDEWEB)

    Dong Xiaodong; Xia Yong; Zhu Guoyi; Zhang Bailin [State Key Laboratory of Electroanalytical Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Graduate University of Chinese Academy of Sciences, Changchun, Jilin 130022 (China)

    2007-10-03

    The tunnel junction of a gold nanogap was fabricated electrochemically for a molecular sensing device in solution. The tunnel junction was sensitive enough to detect the variation of a potential barrier within the nanogap, such as the chemical adsorption of molecules. By monitoring the variation of the tunneling current, which represents the change of a potential barrier due to molecular adsorption, the molecules could be detected.

  11. Linear nanometric tunnel junction sensors with exchange pinned sensing layer

    Energy Technology Data Exchange (ETDEWEB)

    Leitao, D. C., E-mail: dleitao@inesc-mn.pt; Silva, A. V.; Cardoso, S. [INESC-MN and IN, Rua Alves Redol 9, 1000-029 Lisboa (Portugal); Instituto Superior Técnico (IST), Universidade de Lisboa, Av. Rovisco Pais, 1000-029 Lisboa (Portugal); Ferreira, R.; Paz, E.; Deepack, F. L. [INL, Av. Mestre Jose Veiga, 4715-31 Braga (Portugal); Freitas, P. P. [INESC-MN and IN, Rua Alves Redol 9, 1000-029 Lisboa (Portugal); INL, Av. Mestre Jose Veiga, 4715-31 Braga (Portugal)

    2014-05-07

    Highly sensitive nanosensors with high spatial resolution provide the necessary features for high accuracy imaging of isolated magnetic nanoparticles. In this work, we report the fabrication and characterization of MgO-barrier magnetic tunnel junction nanosensors, with two exchange-pinned electrodes. The perpendicular magnetization configuration for field sensing is set using a two-step annealing process, where the second annealing temperature was optimized to yield patterned sensors responses with improved linearity. The optimized circular nanosensors show sensitivities up to 0.1%/Oe, larger than previously reported for nanometric sensors and comparable to micrometric spin-valves. Our strategy avoids the use of external permanent biasing or demagnetizing fields (large for smaller structures) to achieve a linear response, enabling the control of the linear operation range using only the stack and thus providing a small footprint device.

  12. Magnetic Tunnel Junction Mimics Stochastic Cortical Spiking Neurons.

    Science.gov (United States)

    Sengupta, Abhronil; Panda, Priyadarshini; Wijesinghe, Parami; Kim, Yusung; Roy, Kaushik

    2016-01-01

    Brain-inspired computing architectures attempt to mimic the computations performed in the neurons and the synapses in the human brain in order to achieve its efficiency in learning and cognitive tasks. In this work, we demonstrate the mapping of the probabilistic spiking nature of pyramidal neurons in the cortex to the stochastic switching behavior of a Magnetic Tunnel Junction in presence of thermal noise. We present results to illustrate the efficiency of neuromorphic systems based on such probabilistic neurons for pattern recognition tasks in presence of lateral inhibition and homeostasis. Such stochastic MTJ neurons can also potentially provide a direct mapping to the probabilistic computing elements in Belief Networks for performing regenerative tasks. PMID:27443913

  13. Supersymmetric phase transition in Josephson-tunnel-junction arrays

    Energy Technology Data Exchange (ETDEWEB)

    Foda, O.

    1988-08-31

    The fully frustrated XY model in two dimensions exhibits a vortex-unbinding as well as an Ising transition. If the Ising transition overlaps with the critical line that ends on the vortex transition: T/sub I/less than or equal toT/sub V/, then the model is equivalent, at the overlap temperature, to a free massless field theory of 1 boson and 1 Majorana fermion, which is a superconformal field theory, of central charge c=3/2. The model is experimentally realized in terms of an array of Josephson-tunnel junctions in a transverse magnetic field. The experiment reveals a phase transition consistent with T/sub I/=T/sub V/. Thus, at the critical temperature, the array provides a physical realization of a supersymmetric quantum field theory.

  14. Superconducting Tunnel Junctions for High-Precision EUV Spectroscopy

    Science.gov (United States)

    Ponce, F.; Carpenter, M. H.; Cantor, R.; Friedrich, S.

    2016-08-01

    We have characterized the photon response of superconducting tunnel junctions in the extreme ultraviolet energy range below 100 eV with a pulsed 355 nm laser. The detectors are operated at rates up to 5000 counts/s, are very linear in energy and have an energy resolution between 0.9 and 2 eV. We observe multiple peaks that correspond to an integer number of photons with a Poissonian probability distribution and that can be used for high-accuracy energy calibration. The uncertainty of the centroid depends on the detector resolution and the counting statistics and can be as low as 1 meV for well-separated peaks with >10^5 counts. We discuss the precision of the peak centroid as a function of detector resolution and total number of counts and the accuracy of the energy calibration.

  15. A supersymmetric phase transition in Josephson-tunnel-junction arrays

    International Nuclear Information System (INIS)

    The fully frustrated XY model in two dimensions exhibits a vortex-unbinding as well as an Ising transition. If the Ising transition overlaps with the critical line that ends on the vortex transition: TI≤TV, then the model is equivalent, at the overlap temperature, to a free massless field theory of 1 boson and 1 Majorana fermion, which is a superconformal field theory, of central charge c=3/2. The model is experimentally realized in terms of an array of Josephson-tunnel junctions in a transverse magnetic field. The experiment reveals a phase transition consistent with TI=TV. Thus, at the critical temperature, the array provides a physical realization of a supersymmetric quantum field theory. (orig.)

  16. Magnetic Tunnel Junction Mimics Stochastic Cortical Spiking Neurons

    Science.gov (United States)

    Sengupta, Abhronil; Panda, Priyadarshini; Wijesinghe, Parami; Kim, Yusung; Roy, Kaushik

    2016-07-01

    Brain-inspired computing architectures attempt to mimic the computations performed in the neurons and the synapses in the human brain in order to achieve its efficiency in learning and cognitive tasks. In this work, we demonstrate the mapping of the probabilistic spiking nature of pyramidal neurons in the cortex to the stochastic switching behavior of a Magnetic Tunnel Junction in presence of thermal noise. We present results to illustrate the efficiency of neuromorphic systems based on such probabilistic neurons for pattern recognition tasks in presence of lateral inhibition and homeostasis. Such stochastic MTJ neurons can also potentially provide a direct mapping to the probabilistic computing elements in Belief Networks for performing regenerative tasks.

  17. Long Josephson tunnel junctions with doubly connected electrodes

    DEFF Research Database (Denmark)

    Monaco, R.; Mygind, J.; Koshelets, V. P.

    2012-01-01

    In order to mimic the phase changes in the primordial Big Bang, several cosmological solid-state experiments have been conceived, during the last decade, to investigate the spontaneous symmetry breaking in superconductors and superfluids cooled through their transition temperature. In one...... of such experiments, the number of magnetic flux quanta spontaneously trapped in a superconducting loop was measured by means of a long Josephson tunnel junction built on top of the loop itself. We have analyzed this system and found a number of interesting features not occurring in the conventional case with simply....... The theoretical findings are supported by measurements on a number of samples having different geometrical configuration. The experiments demonstrate that a very large signal-to-noise ratio can be achieved in the flux quanta detection....

  18. Long Josephson tunnel junctions with doubly connected electrodes

    Science.gov (United States)

    Monaco, R.; Mygind, J.; Koshelets, V. P.

    2012-03-01

    In order to mimic the phase changes in the primordial Big Bang, several cosmological solid-state experiments have been conceived, during the last decade, to investigate the spontaneous symmetry breaking in superconductors and superfluids cooled through their transition temperature. In one of such experiments, the number of magnetic flux quanta spontaneously trapped in a superconducting loop was measured by means of a long Josephson tunnel junction built on top of the loop itself. We have analyzed this system and found a number of interesting features not occurring in the conventional case with simply connected electrodes. In particular, the fluxoid quantization results in a frustration of the Josephson phase, which, in turn, reduces the junction critical current. Further, the possible stable states of the system are obtained by a self-consistent application of the principle of minimum energy. The theoretical findings are supported by measurements on a number of samples having different geometrical configuration. The experiments demonstrate that a very large signal-to-noise ratio can be achieved in the flux quanta detection.

  19. Effect of interface states on spin-dependent tunneling in Fe/MgO/Fe tunnel junctions

    OpenAIRE

    Belashchenko, K. D.; Velev, J.; Tsymbal, E. Y.

    2005-01-01

    The electronic structure and spin-dependent tunneling in epitaxial Fe/MgO/Fe(001) tunnel junctions are studied using first-principles calculations. For small MgO barrier thickness the minority-spin resonant bands at the two interfaces make a significant contribution to the tunneling conductance for the antiparallel magnetization, whereas these bands are, in practice, mismatched by disorder and/or small applied bias for the parallel magnetization. This explains the experimentally observed decr...

  20. Chaos and related nonlinear noise phenomena in Josephson tunnel junctions

    International Nuclear Information System (INIS)

    The nonlinear dynamics of Josephson tunnel junctions shunted by a resistance with substantial self-inductance have been thoroughly investigated. The current-voltage characteristics of these devices exhibit stable regions of negative differential resistance. Very large increases in the low-frequency voltage noise with equivalent noise temperatures of 106 K or more, observed in the vicinity of these regions, arise from switching, or hopping, between subharmonic modes. Moderate increases in the noise, with temperatures of about 103 K, arise from chaotic behavior. Analog and digital simulations indicate that under somewhat rarer circumstances the same junction system can sustain a purely deterministic hopping between two unstable subharmonic modes, accompanied by excess low-frequency noise. Unlike the noise-induced case, this chaotic process occurs over a much narrower range in bias current and is destroyed by the addition of thermal noise. The differential equation describing the junction system can be reduced to a one-dimensional mapping in the vicinity of one of the unstable modes. A general analytical calculation of switching processes for a class of mappings yields the frequency dependence of the noise spectrum in terms of the parameters of the mapping. Finally, the concepts of noise-induced hopping near bifurcation thresholds are applied to the problem of the three-photon Josephson parametric amplifier. Analog simulations indicate that the noise rise observed in experimental devices arises from occasional hopping between a mode at the pump frequency ω/sub p/ and a mode at the half harmonic ω/sub p//2. The hopping is induced by thermal noise associated with the shunt resistance. 71 references

  1. Coherent tunnelling conductance in normal-metal/d-wave superconductor/normal-metal double tunnel junctions

    International Nuclear Information System (INIS)

    Taking simultaneously into account the electron-injected current from one normal-metal (N) electrode and the hole-injected current from the other N electrode, we study the coherent tunnelling conductance and quantum interference effects in N/d-wave superconductor (S)/N double tunnel junctions. It is found that oscillations of all quasiparticle transport coefficients and the conductance spectrum with quasiparticle energy and thickness of the d-wave S depend to a great extent on the crystal orientation of the d-wave S. The zero-bias conductance peak is gradually lowered with increasing barrier strength and/or temperature, its magnitude exhibiting damped oscillatory behaviour with thickness of S

  2. Modeling the impact of junction angles in tunnel field-effect transistors

    Science.gov (United States)

    Kao, Kuo-Hsing; Verhulst, Anne S.; Vandenberghe, William G.; Sorée, Bart; Groeseneken, Guido; Meyer, Kristin De

    2012-03-01

    We develop an analytical model for a tunnel field-effect transistor (TFET) with a tilted source junction angle. The tunnel current is derived by using circular tunnel paths along the electric field. The analytical model predicts that a smaller junction angle improves the TFET performance, which is supported by device simulations. An analysis is also made based on straight tunnel paths and tunnel paths corresponding to the trajectory of a classical particle. In all the aforementioned cases, the same conclusions are obtained. A TFET configuration with an encroaching polygon source junction is studied to analyze the junction angle dependence at the smallest junction angles. The improvement of the subthreshold swing (SS) with decreasing junction angle can be achieved by using thinner effective oxide thickness, smaller band gap material and longer encroaching length of the encroaching junction. A TFET with a smaller junction angle on the source side also has an innate immunity against the degradation of the fringing field from the gate electrode via a high-k spacer. A large junction angle on the drain side can suppress the unwanted ambipolar current of TFETs.

  3. Effect of Barrier Width on Bias-Dependent Tunnelling in Ferromagnetic Junctions

    Institute of Scientific and Technical Information of China (English)

    LI Fei-Fei; XIAO Ming-Wen; LI Zheng-Zhong; HU An; XU Wang

    2004-01-01

    @@ We present a finite temperature theory for bias-dependent tunnelling in ferromagnetic tunnelling junctions. The effects of the barrier width d on the tunnelling magnetoresistance (TMR) and its sign change behaviour are discussed with this theory. Numerical results show that both the zero-bias TMR and the critical voltage Vc at which the TMR changes its sign decrease with the increasing barrier width for a considerably thick barrier junction. Furthermore, it is found that a minimum exists in the curve of Vc versus d if a composite junction is under oxidized.

  4. Electromigration-driven resistance switching in non-magnetic tunnel junctions

    International Nuclear Information System (INIS)

    Current induced switching (CIS) was recently observed in thin magnetic tunnel junctions and attributed to electromigration of metallic atoms in nanoconstrictions in the insulating barrier. Here we study the CIS effect in tunnel junctions with a Ta layer deposited just below the insulating barrier. We observe enhanced resistance switching with increasing maximum applied current. Anomalous voltage-current characteristics with negative derivative were observed and this effect is attributed to heating in the tunnel junction. We also observe that, after repeatedly applying large current pulses, the electrical resistance decreases sharply through irreversible steps when ions are displaced into the barrier

  5. Harmonic and reactive behavior of the quasiparticle tunnel current in SIS junctions

    Science.gov (United States)

    Rashid, H.; Desmaris, V.; Pavolotsky, A.; Belitsky, V.

    2016-04-01

    In this paper, we show theoretically and experimentally that the reactive quasiparticle tunnel current of the superconductor tunnel junction could be directly measured at specific bias voltages for the higher harmonics of the quasiparticle tunnel current. We used the theory of quasiparticle tunneling to study the higher harmonics of the quasiparticle tunnel current in superconducting tunnel junction in the presence of rf irradiation. The impact of the reactive current on the harmonic behavior of the quasiparticle tunnel current was carefully studied by implementing a practical model with four parameters to model the dc I-V characteristics of the superconducting tunnel junction. The measured reactive current at the specific bias voltage is in good agreement with our theoretically calculated reactive current through the Kramers-Kronig transform. This study also shows that there is an excellent correspondence between the behavior of the predicted higher harmonics using the previously established theory of quasiparticle tunnel current in superconducting tunnel junctions by J.R. Tucker and M.J. Feldman and the measurements presented in this paper.

  6. Continuous wave operation of buried heterostructure 4.6 µm quantum cascade laser Y-junctions and tree arrays.

    Science.gov (United States)

    Lyakh, Arkadiy; Maulini, Richard; Tsekoun, Alexei; Go, Rowel; Patel, C Kumar N

    2014-01-13

    Room-temperature continuous-wave operation for buried heterostructure 4.6 µm quantum cascade laser Y-junctions and tree arrays, overgrown using hydride vapor phase epitaxy, has been demonstrated. Pulsed wall plug efficiency for the Y-junctions with bending radius of 5mm was measured to be very similar to that of single-emitter lasers from the same material, indicating low coupling losses. Comparison between model and experimental data showed that the in-phase mode was dominating for 10mm-long Y-junctions with 5 µm-wide 1mm-long stem and 5 µm-wide branches. Total optical power over 1.5 W was demonstrated for four-branch QCL tree array. PMID:24515081

  7. Tunnel magnetoresistance in epitaxially grown magnetic tunnel junctions using Heusler alloy electrode and MgO barrier

    Energy Technology Data Exchange (ETDEWEB)

    Tsunegi, S.; Sakuraba, Y.; Oogane, M.; Telling, N. D.; Shelford, L. R.; Arenholz, E.; van der Laan, G.; Hicken, R. J.; Takanashi, K.; Ando, Y.

    2009-07-01

    Epitaxially grown magnetic tunnel junctions (MTJs) with a stacking structure of Co{sub 2}MnSi/MgO/CoFe were fabricated. Their tunnel magnetoresistance (TMR) effects were investigated. The TMR ratio and tunnelling conductance characteristics of MTJs were considerably different between those with an MgO barrier prepared using sputtering (SP-MTJ) and those prepared using EB evaporation (EB-MTJ). The EB-MTJ exhibited a very large TMR ratio of 217% at room temperature and 753% at 2 K. The bias voltage dependence of the tunnelling conductance in the parallel magnetic configuration for the EB-MTJ suggests that the observed large TMR ratio at RT results from the coherent tunnelling process through the crystalline MgO barrier. The tunnelling conductance in the anti-parallel magnetic configuration suggests that the large temperature dependence of the TMR ratio results from the inelastic spin-flip tunnelling process.

  8. Output voltage calculations in double barrier magnetic tunnel junctions with asymmetric voltage behavior

    KAUST Repository

    Useinov, Arthur

    2011-10-22

    In this paper we study the asymmetric voltage behavior (AVB) of the tunnel magnetoresistance (TMR) for single and double barrier magnetic tunnel junctions (MTJs) in range of a quasi-classical free electron model. Numerical calculations of the TMR-V curves, output voltages and I-V characteristics for negative and positive values of applied voltages were carried out using MTJs with CoFeB/MgO interfaces as an example. Asymmetry of the experimental TMR-V curves is explained by different values of the minority and majority Fermi wave vectors for the left and right sides of the tunnel barrier, which arises due to different annealing regimes. Electron tunneling in DMTJs was simulated in two ways: (i) Coherent tunneling, where the DMTJ is modeled as one tunnel system and (ii) consecutive tunneling, where the DMTJ is modeled by two single barrier junctions connected in series. © 2012 Elsevier B.V. All rights reserved.

  9. Dependence of tunnel magnetoresistance in MgO based magnetic tunnel junctions on Ar pressure during MgO sputtering

    OpenAIRE

    Ikeda, Shoji; Hayakawa, Jun; Lee, Young Min; Sasaki, Ryutaro; Meguro, Toshiyasu; Matsukura, Fumihiro; Ohno, Hideo

    2005-01-01

    We investigated dependence of tunnel magnetoresistance effect in CoFeB/MgO/CoFeB magnetic tunnel junctions on Ar pressure during MgO-barrier sputtering. Sputter deposition of MgO-barrier at high Ar pressure of 10 mTorr resulted in smooth surface and highly (001) oriented MgO. Using this MgO as a tunnel barrier, tunnel magnetoresistance (TMR) ratio as high as 355% at room temperature (578% at 5K) was realized after annealing at 325 C or higher, which appears to be related to a highly (001) ori...

  10. Wide bandgap, strain-balanced quantum well tunnel junctions on InP substrates

    Science.gov (United States)

    Lumb, M. P.; Yakes, M. K.; González, M.; Bennett, M. F.; Schmieder, K. J.; Affouda, C. A.; Herrera, M.; Delgado, F. J.; Molina, S. I.; Walters, R. J.

    2016-05-01

    In this work, the electrical performance of strain-balanced quantum well tunnel junctions with varying designs is presented. Strain-balanced quantum well tunnel junctions comprising compressively strained InAlAs wells and tensile-strained InAlAs barriers were grown on InP substrates using solid-source molecular beam epitaxy. The use of InAlAs enables InP-based tunnel junction devices to be produced using wide bandgap layers, enabling high electrical performance with low absorption. The impact of well and barrier thickness on the electrical performance was investigated, in addition to the impact of Si and Be doping concentration. Finally, the impact of an InGaAs quantum well at the junction interface is presented, enabling a peak tunnel current density of 47.6 A/cm2 to be realized.

  11. Coexistance of Giant Tunneling Electroresistance and Magnetoresistance in an All-Oxide Composite Magnetic Tunnel Junction

    KAUST Repository

    Caffrey, Nuala Mai

    2012-11-30

    We propose, by performing advanced abinitio electron transport calculations, an all-oxide composite magnetic tunnel junction, within which both large tunneling magnetoresistance (TMR) and tunneling electroresistance (TER) effects can coexist. The TMR originates from the symmetry-driven spin filtering provided by an insulating BaTiO3 barrier to the electrons injected from the SrRuO3 electrodes. Following recent theoretical suggestions, the TER effect is achieved by intercalating a thin insulating layer, here SrTiO3, at one of the SrRuO3/BaTiO3 interfaces. As the complex band structure of SrTiO3 has the same symmetry as that of BaTiO3, the inclusion of such an intercalated layer does not negatively alter the TMR and in fact increases it. Crucially, the magnitude of the TER also scales with the thickness of the SrTiO3 layer. The SrTiO3 thickness becomes then a single control parameter for both the TMR and the TER effect. This protocol offers a practical way to the fabrication of four-state memory cells. © 2012 American Physical Society.

  12. Enhanced Tunneling Electroresistance in Ferroelectric Tunnel Junctions due to the Reversible Metallization of the Barrier

    Science.gov (United States)

    Liu, Xiaohui; Burton, J. D.; Tsymbal, Evgeny Y.

    2016-05-01

    Realizing a large tunneling electroresistance (TER) effect is crucial for device application of ferroelectric tunnel junctions (FTJs). FTJs are typically composed of a thin ferroelectric layer sandwiched by two metallic electrodes, where TER generally results from the dependence of the effective tunneling barrier height on the ferroelectric polarization. Since the resistance depends exponentially not only on barrier height but also on barrier width, TER is expected to be greatly enhanced when one of the electrodes is a semiconductor where the depletion region near the interface can be controlled via ferroelectric polarization. To explore this possibility, we perform studies of SrRuO3/BaTiO3/n -SrTiO3 FTJs, where n -SrTiO3 is an electron doped SrTiO3 electrode, using first-principles density functional theory. Our studies reveal that, in addition to modulation of the depletion region in n -SrTiO3 , the BaTiO3 barrier layer becomes conducting near the interface for polarization pointing into n -SrTiO3 , leading to dramatic enhancement of TER. The effect is controlled by the band alignment between the semiconductor and the ferroelectric insulator and opens the way for experimental realization of enhanced TER in FTJs through the choice of a semiconducting electrode and interface engineering.

  13. Temperature dependent resistance of magnetic tunnel junctions as a quality proof of the barrier

    International Nuclear Information System (INIS)

    Tunnel junctions of Co(10 nm)/AlOx (nominally 2 nm)/Co(20 nm) have been prepared by molecular beam epitaxy applying a shadow mask technique in conjunction with an UV light-assisted oxidation process of the AlOx barrier. The quality of the AlOx barrier has been proven by x-ray photoelectron spectroscopy and temperature dependent tunneling magnetoresistance (TMR) measurements. Optimum-oxidized tunnel junctions show a TMR of 20% at 285 K and up to 36% at 100 K. At 285 K the TMR values as a function of oxidation time are not symmetric about the optimum time. For underoxidized junctions the TMR is reduced more strongly than for overoxidized junctions. The temperature dependence of the junction's resistance is a clear and reliable indicator whether pinholes (or imperfections) contribute to the conduction across the barrier. [copyright] 2001 American Institute of Physics

  14. Current-Voltage Characteristics of MIM(S) Light Emission Tunnel Junctions

    Institute of Scientific and Technical Information of China (English)

    WANG Maoxiang; YU Jianhua; SUN Chengxiu; WU Zonghan

    2001-01-01

    Double-barrier Au/Al2O3/Al/Al2O3/Al and Si-based Au/SiO2/Si light emission tunnel junctions were constructed. Light emission from these junctions was observed successfully. In this paper,we introduced simply the fabrication process of the double-barrier MIMJ and MIS J, and analyzed especially the I- V property and the negative resistance phenomenon (NRP) of these junctions. We concluded that the NRP resulted from obstructive effect of SPP to the electron's tunneling in the insulator layer, which will widen the barrier's width. The NRP was closely connected with the light emission. The SPP was a bridge of light emission and NRP of the junction. Discussion on the NRP was helpful to understand the electron tunneling characteristic and the light emission physical picture of these junctions.

  15. A high voltage Bi-CMOS compatible buffer super-junction LDMOS with an N-type buried layer

    International Nuclear Information System (INIS)

    A novel buffer super-junction (SJ) lateral double-diffused MOSFET (LDMOS) with an N-type buried layer (NB) is proposed. An N− buffer layer is implemented under the SJ region and an N-type layer is buried in the P substrate. Firstly, the new electric field peak introduced by the p—n junction of the P substrate and the N-type buried layer modulates the surface electric field distribution. Secondly, the N− buffer layer suppresses the substrate assisted depletion effect. Both of them improve the breakdown voltage (BV). Finally, because of the shallow depth of the SJ region, the NB buffer SJ-LDMOS is compatible with Bi-CMOS technology. Simulation results indicate that the average value of the surface lateral electric field strength of the NB buffer SJ-LDMOS reaches 23 V/μm at 15 μm drift length which results in a BV of 350 V and a specific on-resistance of 21 mΩ·cm2. (semiconductor devices)

  16. Electrostatic Control over Temperature-Dependent Tunneling across a Single Molecule Junction

    OpenAIRE

    Alvar R. Garrigues; Wang, Lejia; del Barco, Enrique; Nijhuis, Christian A.

    2016-01-01

    Understanding how the mechanism of charge transport through molecular tunnel junctions depends on temperature is crucial to control electronic function in molecular electronic devices. With just a few systems investigated as a function of bias and temperature so far, thermal effects in molecular tunnel junctions remain poorly understood. Here we report a detailed charge transport study of an individual redox-active ferrocene-based molecule over a wide range of temperatures and applied potenti...

  17. Strain sensing with sub-micron sized Al-AlOx-Al tunnel junctions

    OpenAIRE

    Koppinen, P. J.; Lievonen, J. T.; Ahlskog, M.; Maasilta, I. J.

    2009-01-01

    We demonstrate a local strain sensing method for nanostructures based on metallic Al tunnel junctions with AlOx barriers. The junctions were fabricated on top of a thin silicon nitride membrane, which was actuated with an AFM tip attached to a stiff cantilever. A large relative change in the tunneling resistance in response to the applied strain (gauge factor) was observed, up to a value 37. This facilitates local static strain variation measurements down to ~10^{-7}.

  18. AlGaAs/GaAs tunnel junctions in a 4-J tandem solar cell

    Institute of Scientific and Technical Information of China (English)

    Lü Siyu; Qu Xiaosheng

    2011-01-01

    The Ⅲ-Ⅴ compound tandem solar cell is a third-generation new style solar cell with ultra-high efficiency.The energy band gaps of the sub-cells in a GaInP/GaAs/InGaAs/Ge 4-J tandem solar cell are 1.8,1.4,1.0and 0.7 eV,respectively.In order to match the currents between sub-cells,tunnel junctions are used to connect the sub-cells.The characteristics of the tunnel junction,the material used in the tunnel junction,the compensation of the tunnel junction to the overall cell's characteristics,the tunnel junction's influence on the current density of sub-cells and the efficiency increase are discussed in the paper.An A1GaAs/GaAs tunnel junction is selected to simulate the cell's overall characteristics by PC 1 D,current densities of 16.02,17.12,17.75 and 17.45 mA/cm2 are observed,with a Voc of 3.246 V,the energy conversion efficiency under AM0 is 33.9%.

  19. Dynamic compact model of thermally assisted switching magnetic tunnel junctions

    Science.gov (United States)

    El Baraji, M.; Javerliac, V.; Guo, W.; Prenat, G.; Dieny, B.

    2009-12-01

    The general purpose of spin electronics is to take advantage of the electron's spin in addition to its electrical charge to build innovative electronic devices. These devices combine magnetic materials which are used as spin polarizer or analyzer together with semiconductors or insulators, resulting in innovative hybrid CMOS/magnetic (Complementary MOS) architectures. In particular, magnetic tunnel junctions (MTJs) can be used for the design of magnetic random access memories [S. Tehrani, Proc. IEEE 91, 703 (2003)], magnetic field programmable gate arrays [Y. Guillement, International Journal of Reconfigurable Computing, 2008], low-power application specific integrated circuits [S. Matsunaga, Appl. Phys. Express 1, 091301 (2008)], and rf oscillators. The thermally assisted switching (TAS) technology requires heating the MTJ before writing it by means of an external field. It reduces the overall power consumption, solves the data writing selectivity issues, and improves the thermal stability of the written information for high density applications. The design of hybrid architectures requires a MTJ compact model, which can be used in standard electrical simulators of the industry. As a result, complete simulations of CMOS/MTJ hybrid circuits can be performed before experimental realization and testing. This article presents a highly accurate model of the MTJ based on the TAS technology. It is compatible with the Spectre electrical simulator of Cadence design suite.

  20. Tunnel Junction with Perpendicular Magnetic Anisotropy: Status and Challenges

    Directory of Open Access Journals (Sweden)

    Mengxing Wang

    2015-08-01

    Full Text Available Magnetic tunnel junction (MTJ, which arises from emerging spintronics, has the potential to become the basic component of novel memory, logic circuits, and other applications. Particularly since the first demonstration of current induced magnetization switching in MTJ, spin transfer torque magnetic random access memory (STT-MRAM has sparked a huge interest thanks to its non-volatility, fast access speed, and infinite endurance. However, along with the advanced nodes scaling, MTJ with in-plane magnetic anisotropy suffers from modest thermal stability, high power consumption, and manufactural challenges. To address these concerns, focus of research has converted to the preferable perpendicular magnetic anisotropy (PMA based MTJ, whereas a number of conditions still have to be met before its practical application. This paper overviews the principles of PMA and STT, where relevant issues are preliminarily discussed. Centering on the interfacial PMA in CoFeB/MgO system, we present the fundamentals and latest progress in the engineering, material, and structural points of view. The last part illustrates potential investigations and applications with regard to MTJ with interfacial PMA.

  1. Bottom-Up Molecular Tunneling Junctions Formed by Self-Assembly

    NARCIS (Netherlands)

    Zhang, Yanxi; Zhao, Zhiyuan; Fracasso, Davide; Chiechi, Ryan C

    2014-01-01

    This Minireview focuses on bottom-up molecular tunneling junctions - a fundamental component of molecular electronics - that are formed by self-assembly. These junctions are part of devices that, in part, fabricate themselves, and therefore, are particularly dependent on the chemistry of the molecul

  2. One-third (period three) harmonic generation in microwave-driven Josephson tunnel junctions

    DEFF Research Database (Denmark)

    Hansen, Jørn Bindslev; Clarke, J.; Mygind, Jesper; Ovsyannikov, G. A.; Svensmark, Henrik

    1986-01-01

    One-third harmonic signals have been generated in the zero voltage state of a Josephson tunnel junction driven with a microwave current in the frequency range 8–20 GHz. The signal was as much as 50 dB above the noise level of the detector with a linewidth of less than 100 Hz. The junction...

  3. Remanent effects and granular Josephson tunnelling in 1:2:3 micro-bridge junctions

    International Nuclear Information System (INIS)

    A study has been made of supercurrent in a 1:2:3 micro-bridge or slot-junction. It is shown that the maximum supercurrent through a slot-junction is strongly dependent on temperature, applied magnetic field, and magnetic history. In addition, inter-granular Josephson tunnelling has been observed using field-modulation techniques

  4. Magnetoresistance in Co/AlO sub x /Co tunnel junction arrays

    CERN Document Server

    Urech, M; Haviland, D B

    2002-01-01

    Lateral arrays of Co/AlO sub x /Co junctions with dimensions down to 60 nm and inter-junction separations approx 60-100 nm have been fabricated and analyzed for possible coherent tunneling effects. Extra attention is paid to avoid uncertainties due to inconsistencies in switching and/or resistance of successive barriers. We observe approx 10% magnetoresistance enhancement at moderate bias in double junctions that cannot be accounted for by a simple model of two resistsors in series.

  5. Niobium nitride-niobium Josephson tunnel junctions with sputtered amorphous silicon barriers

    International Nuclear Information System (INIS)

    Niobium nitride-niobium Josephson tunnel junctions with sputtered amorphous silicon barriers (NbN-αSi-Nb) have been prepared using processing that is fully compatible with integrated circuit fabrication. These junctions are of suitable quality and uniformity for digital circuit and S-I-S detector applications. The junction quality depends critically upon the properties of the NbN surface, and seems to correlate well with the UV/visible reflectivity of this surface

  6. Light emission and finite-frequency shot noise in molecular junctions: from tunneling to contact

    DEFF Research Database (Denmark)

    Lu, Jing Tao; Christensen, Rasmus Bjerregaard; Brandbyge, Mads

    2013-01-01

    Scanning tunneling microscope induced light emission from an atomic or molecular junction has been probed from the tunneling to contact regime in recent experiments. There, the measured light emission yields suggest a strong correlation with the high-frequency current/charge fluctuations. We show...

  7. Quantum Oscillations of Tunnel Magnetoresistance Induced by Spin-Wave Excitations in Ferromagnet-Ferromagnet-Ferromagnet Double Barrier Tunnel Junctions

    OpenAIRE

    Chen, Xi; Zheng, Qing-Rong; Su, Gang

    2008-01-01

    The possibility of quantum oscillations of the tunnel conductance and magnetoresistance induced by spin-wave excitations in a ferromagnet-ferromagnet-ferromagnet double barrier tunnel junction, when the magnetizations of the two side ferromagnets are aligned antiparallel to that of the middle ferromagnet, is investigated in a self-consistent manner by means of Keldysh nonequilibrium Green function method. It has been found that owing to the s-d exchange interactions between conduction electro...

  8. Light amplification by stimulated emission from an optically pumped molecular junction in a scanning tunneling microscope

    OpenAIRE

    Braun, K; Kern, A. M.; X. Wang; Adler, H.; Peisert, H.; Chasse, T.; Zhang, D.(Department of Physics, The University of Michigan, Ann Arbor, MI, United States of America); Meixner, A.J.

    2013-01-01

    Here, we introduce and experimentally demonstrate optical amplification and stimulated emission from a single optically pumped molecular tunneling junction of a scanning tunneling microscope. The gap between a sharp gold tip and a flat gold substrate covered with a self-assembled monolayer of 5-chloro-2-mercaptobenzothiazole molecules forms an extremely small optical gain medium. When electrons tunnel from the molecules highest occupied molecular orbital to the tip, holes are left behind. The...

  9. Artificial ferroelectricity due to anomalous Hall effect in magnetic tunnel junctions

    OpenAIRE

    Vedyayev, A.; Ryzhanova, N.; Strelkov, N.; Dieny, B

    2012-01-01

    We theoretically investigated Anomalous Hall Effect (AHE) and Spin Hall Effect (SHE) transversally to the insulating spacer O, in magnetic tunnel junctions of the form F/O/F where F are ferromagnetic layers and O represents a tunnel barrier. We considered the case of purely ballistic (quantum mechanical) transport, taking into account the assymetric scattering due to spin-orbit interaction in the tunnel barrier. AHE and SHE in the considered case have a surface nature due to proximity effect....

  10. Large magnetoresistance of paracyclophane-based molecular tunnel junctions: A first-principles study

    Energy Technology Data Exchange (ETDEWEB)

    Tao, L. L.; Liang, S. H.; Liu, D. P.; Han, X. F., E-mail: xfhan@iphy.ac.cn [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China)

    2013-12-07

    We report a theoretical study of magnetoresistance and spin-polarized transport of a series of paracyclophane-based molecular tunnel junctions. We predict that the molecular tunnel junction using [2.2]-paracyclophane barrier has the desired low resistance area product in combination with high magnetoresistance ratio. In addition, we find the spin-polarized conductance decreases exponentially with increasing the molecular length, indicating a nonresonant tunneling mechanism. In particular, the characteristic decay constant can be theoretically evaluated from the complex band structure of periodic paracyclophane molecule. The spin-polarized transport mechanism is systematically analyzed.

  11. Temperature dependent resistance of magnetic tunnel junctions as a quality proof of the barrier

    OpenAIRE

    Rüdiger, Ulrich; Calarco, Raffaella; May, Ulrich; Samm, K.; Hauch, Jan O.; Kittur, Harish; Sperlich, Martin; Güntherodt, Gernot

    2001-01-01

    Tunnel junctions of Co(10 nm)/AlOx (nominally 2 nm)/Co(20 nm) have been prepared by molecular beam epitaxy applying a shadow mask technique in conjunction with an UV light-assisted oxidation process of the AlOx barrier. The quality of the AlOx barrier has been proven by x-ray photoelectron spectroscopy and temperature dependent tunneling magnetoresistance (TMR) measurements. Optimum-oxidized tunnel junctions show a TMR of 20% at 285 K and up to 36% at 100 K. At 285 K the TMR values as a funct...

  12. Large magnetoresistance of paracyclophane-based molecular tunnel junctions: A first-principles study

    International Nuclear Information System (INIS)

    We report a theoretical study of magnetoresistance and spin-polarized transport of a series of paracyclophane-based molecular tunnel junctions. We predict that the molecular tunnel junction using [2.2]-paracyclophane barrier has the desired low resistance area product in combination with high magnetoresistance ratio. In addition, we find the spin-polarized conductance decreases exponentially with increasing the molecular length, indicating a nonresonant tunneling mechanism. In particular, the characteristic decay constant can be theoretically evaluated from the complex band structure of periodic paracyclophane molecule. The spin-polarized transport mechanism is systematically analyzed

  13. Nb/NiCu bilayers in single and stacked superconductive tunnel junctions: preliminary results

    Energy Technology Data Exchange (ETDEWEB)

    Pepe, G.P. E-mail: ruotolo_antonio@tin.it; Ruotolo, A.; Parlato, L.; Peluso, G.; Ausanio, G.; Carapella, G.; Latempa, R

    2004-05-01

    We present preliminary experimental results concerning both single and stacked tunnel junctions in which one of the electrodes was formed by a superconductor/ferromagnet (S/F) bi-layer. In particular, in the stacked configuration a Nb/NiCu bi-layer was used as the intermediate electrode, and it was probed by tunneling on both sides. Tunnel junctions have been characterized in terms of current-voltage characteristics (IVC), and differential conductance. Preliminary steady-state injection-detection measurements performed in the stacked devices at T=4.2 K are also presented and discussed.

  14. Nb/NiCu bilayers in single and stacked superconductive tunnel junctions: preliminary results

    International Nuclear Information System (INIS)

    We present preliminary experimental results concerning both single and stacked tunnel junctions in which one of the electrodes was formed by a superconductor/ferromagnet (S/F) bi-layer. In particular, in the stacked configuration a Nb/NiCu bi-layer was used as the intermediate electrode, and it was probed by tunneling on both sides. Tunnel junctions have been characterized in terms of current-voltage characteristics (IVC), and differential conductance. Preliminary steady-state injection-detection measurements performed in the stacked devices at T=4.2 K are also presented and discussed

  15. High tunneling magnetoresistance ratio in perpendicular magnetic tunnel junctions using Fe-based Heusler alloys

    International Nuclear Information System (INIS)

    Heulser alloys Fe2Cr1−xCoxSi (FCCS) with different Co compositions x have been predicted to have high spin polarization. High perpendicular magnetic anisotropy (PMA) has been observed in ultra-thin FCCS films with magnetic anisotropy energy density up to 2.3 × 106 erg/cm3. The perpendicular magnetic tunnel junctions (p-MTJs) using FCCS films with different Co compositions x as the bottom electrode have been fabricated and the post-annealing effects have been investigated in details. An attractive tunneling magnetoresistance ratio as high as 51.3% is achieved for p-MTJs using Fe2CrSi (FCS) as the bottom electrode. The thermal stability Δ can be as high as 70 for 40 nm dimension devices using FCS, which is high enough to endure a retention time of over 10 years. Therefore, Heusler alloy FCS is a promising PMA candidate for p-MTJ application

  16. High tunneling magnetoresistance ratio in perpendicular magnetic tunnel junctions using Fe-based Heusler alloys

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Yu-Pu, E-mail: Vicky-sg1015@hotmail.com [Department of Electrical and Computer Engineering, National University of Singapore (Singapore); Data Storage Institute, Agency for Science, Technology and Research - A*STAR (Singapore); Lim, Sze-Ter; Han, Gu-Chang, E-mail: HAN-Guchang@dsi.a-star.edu.sg [Data Storage Institute, Agency for Science, Technology and Research - A*STAR (Singapore); Teo, Kie-Leong, E-mail: eleteokl@nus.edu.sg [Department of Electrical and Computer Engineering, National University of Singapore (Singapore)

    2015-12-21

    Heulser alloys Fe{sub 2}Cr{sub 1−x}Co{sub x}Si (FCCS) with different Co compositions x have been predicted to have high spin polarization. High perpendicular magnetic anisotropy (PMA) has been observed in ultra-thin FCCS films with magnetic anisotropy energy density up to 2.3 × 10{sup 6 }erg/cm{sup 3}. The perpendicular magnetic tunnel junctions (p-MTJs) using FCCS films with different Co compositions x as the bottom electrode have been fabricated and the post-annealing effects have been investigated in details. An attractive tunneling magnetoresistance ratio as high as 51.3% is achieved for p-MTJs using Fe{sub 2}CrSi (FCS) as the bottom electrode. The thermal stability Δ can be as high as 70 for 40 nm dimension devices using FCS, which is high enough to endure a retention time of over 10 years. Therefore, Heusler alloy FCS is a promising PMA candidate for p-MTJ application.

  17. Inter-band phase fluctuations in macroscopic quantum tunneling of multi-gap superconducting Josephson junctions

    Energy Technology Data Exchange (ETDEWEB)

    Asai, Hidehiro, E-mail: hd-asai@aist.go.jp [Electronics and Photonics Research Institute (ESPRIT), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568 (Japan); Ota, Yukihiro [CCSE, Japan Atomic Energy Agency, Kashiwa, Chiba 277-8587 (Japan); Kawabata, Shiro [Electronics and Photonics Research Institute (ESPRIT), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568 (Japan); Nori, Franco [CEMS, RIKEN, Wako-shi, Saitama 351-0198 (Japan); Physics Department, University of Michigan, Ann Arbor, MI 48109-1040 (United States)

    2014-09-15

    Highlights: • We study MQT in Josephson junctions composed of multi-gap superconductors. • We derive a formula of the MQT escape rate for multiple phase differences. • We investigate the effect of inter-band phase fluctuation on MQT. • The MQT escape rate is significantly enhanced by the inter-band phase fluctuation. - Abstract: We theoretically investigate macroscopic quantum tunneling (MQT) in a hetero Josephson junction formed by a conventional single-gap superconductor and a multi-gap superconductor. In such Josephson junctions, phase differences for each tunneling channel are defined, and the fluctuation of the relative phase differences appear which is referred to as Josephson–Leggett’s mode. We take into account the effect of the fluctuation in the tunneling process and calculate the MQT escape rate for various junction parameters. We show that the fluctuation of relative phase differences drastically enhances the escape rate.

  18. X-ray response of Nb-based superconducting tunnel junction

    International Nuclear Information System (INIS)

    Josephson tunnel junctions are well known as low temperature electronics devices. However, they are also important as very powerful sensors. A novel class of sensors is constituted by radiation detectors based on superconducting tunnel junctions, which could lead in next future to an advanced instrumentation with an interesting applicative future. So far this area is restricted to low-temperature superconductors. Several superconducting materials have been considered. Among them, Niobium is very attractive because of its highest critical temperature Tc. We have measured detailed X-ray detection characteristics for Nb-based tunnel junction made with different fabrication processes. We will discuss the difference in the X-ray response in terms of the relevant junction's parameters, underlying the problems of the niobium as suitable material for this kind of device. (orig.)

  19. A superconducting tunnel junction X-ray detector design for practical applications

    International Nuclear Information System (INIS)

    Superconducting tunnel junctions coupled to a superconducting absorber can be used as a high-resolution energy-dispersive X-ray detector. The energy of an absorbed X-ray breaks Cooper pairs in the absorber, producing quasiparticles. These quasiparticles can tunnel through the barrier and be counted. When used in conjunction with FET electronics, however, the noise requirements limit the area of the tunnel junction. In many designs, this also limits the absorber area. We present a detector design that separates the absorber from the junction. It features a tantalum absorber for high absorption efficiency and an aluminum transport layer for rapid, low loss transport to the junction. Transport is aided by multiple trapping stages, while fabrication is simplified by using only two materials. (orig.)

  20. Transient magnetic tunneling mediated by a molecular bridge in the junction region

    Science.gov (United States)

    Kalvová, A.; Špička, V.; Velický, B.

    2014-07-01

    This paper extends our recent theoretical study of transient currents in molecular bridge junctions [1] to magnetic tunneling. Presently, we calculate the excess magnetic tunneling through the molecular bridge shunting the junction. The system is represented by two ferromagnetic electrodes bridged by a molecular size island with one electronic level and a local Hubbard type correlation. The island is linked with the electrodes by tunneling junctions whose coupling strength is assumed to undergo rapid changes affecting the connectivity of the system. We employ the non-equilibrium Green's functions. The numerical solution is obtained solving the real-time Dyson equation in the integro-differential form self-consistently. The switching events controlling the junctions give rise to transient changes of magnetisation of the island. They strongly depend on the static galvanic bias between the electrodes, mutual alignment of their magnetisation and on the time scale of the switching.

  1. Sidewall GaAs tunnel junctions fabricated using molecular layer epitaxy

    International Nuclear Information System (INIS)

    In this article we review the fundamental properties and applications of sidewall GaAs tunnel junctions. Heavily impurity-doped GaAs epitaxial layers were prepared using molecular layer epitaxy (MLE), in which intermittent injections of precursors in ultrahigh vacuum were applied, and sidewall tunnel junctions were fabricated using a combination of device mesa wet etching of the GaAs MLE layer and low-temperature area-selective regrowth. The fabricated tunnel junctions on the GaAs sidewall with normal mesa orientation showed a record peak current density of 35 000 A cm-2. They can potentially be used as terahertz devices such as a tunnel injection transit time effect diode or an ideal static induction transistor. (topical review)

  2. Superconducting Al-trilayer tunnel junctions for use as X-ray detectors

    Science.gov (United States)

    Gaidis, M. C.; Friedrich, S.; Prober, D. E.; Moseley, S. H.; Szymkowiak, A. E.

    1993-01-01

    Photolithographic techniques have been developed to fabricate high-quality Al-Al oxide-Al superconducting tunnel junctions for use in X-ray detectors. These devices are designed to incorporate about 1-micron-thick superconducting X-ray absorbers for the detection of less than 10-keV single photons. In an effort to increase energy resolution, superconductor bandgap engineering with lateral and vertical trapping has been used to shorten quasi-particle tunneling times and diffusion lengths and to prevent quasi-particle diffusion away from the tunnel junction. Methods that have been developed for overcoming materials imcompatibility and device degradation upon thermal cycling are reported. The authors also report on the use of a nonrectangular tunnel junction geometry which reduces the magnetic field needed to suppress the Josephson current for stable biasing. Work in progress to measure the energy resolution of these X-ray detectors at 0.35 K is also discussed.

  3. Sidewall GaAs tunnel junctions fabricated using molecular layer epitaxy

    Directory of Open Access Journals (Sweden)

    Takeo Ohno and Yutaka Oyama

    2012-01-01

    Full Text Available In this article we review the fundamental properties and applications of sidewall GaAs tunnel junctions. Heavily impurity-doped GaAs epitaxial layers were prepared using molecular layer epitaxy (MLE, in which intermittent injections of precursors in ultrahigh vacuum were applied, and sidewall tunnel junctions were fabricated using a combination of device mesa wet etching of the GaAs MLE layer and low-temperature area-selective regrowth. The fabricated tunnel junctions on the GaAs sidewall with normal mesa orientation showed a record peak current density of 35 000 A cm-2. They can potentially be used as terahertz devices such as a tunnel injection transit time effect diode or an ideal static induction transistor.

  4. Numerical Simulation of Rock Mass Damage Evolution During Deep-Buried Tunnel Excavation by Drill and Blast

    Science.gov (United States)

    Yang, Jianhua; Lu, Wenbo; Hu, Yingguo; Chen, Ming; Yan, Peng

    2015-09-01

    Presence of an excavation damage zone (EDZ) around a tunnel perimeter is of significant concern with regard to safety, stability, costs and overall performance of the tunnel. For deep-buried tunnel excavation by drill and blast, it is generally accepted that a combination of effects of stress redistribution and blasting is mainly responsible for development of the EDZ. However, few open literatures can be found to use numerical methods to investigate the behavior of rock damage induced by the combined effects, and it is still far from full understanding how, when and to what degree the blasting affects the behavior of the EDZ during excavation. By implementing a statistical damage evolution law based on stress criterion into the commercial software LS-DYNA through its user-subroutines, this paper presents a 3D numerical simulation of the rock damage evolution of a deep-buried tunnel excavation, with a special emphasis on the combined effects of the stress redistribution of surrounding rock masses and the blasting-induced damage. Influence of repeated blast loadings on the damage extension for practical millisecond delay blasting is investigated in the present analysis. Accompanying explosive detonation and secession of rock fragments from their initial locations, in situ stress in the immediate vicinity of the excavation face is suddenly released. The transient characteristics of the in situ stress release and induced dynamic responses in the surrounding rock masses are also highlighted. From the simulation results, some instructive conclusions are drawn with respect to the rock damage mechanism and evolution during deep-buried tunnel excavation by drill and blast.

  5. Voltage-Controlled Magnetic Dynamics in Nanoscale Magnetic Tunnel Junctions

    Science.gov (United States)

    Alzate Vinasco, Juan Guillermo

    Spintronic devices, i.e., those utilizing the interaction of magnetic moments with electric voltages and currents in magnetic nanostructures, offer an exceptionally promising set of candidates for future electronic memory needs. Recently, the possibility of reversing the magnetization of nanoscale magnetic tunnel junction (MTJ) devices using the spin transfer torque (STT) effect has attracted the attention of industry and academia, since STT-MRAM has been demonstrated to be a strong candidate for a high speed, high density, and high endurance nonvolatile memory. Further, by replacing the current-driven (e.g., STT) switching mechanism for a voltage-controlled effect, a novel magnetoelectric RAM (MeRAM) architecture could result in considerable improvements in terms of density and dissipated energy during switching, both factors which are limited in STT-MRAM by the large currents required. In this dissertation, the possibility of exploiting the voltage-controlled magnetic anisotropy (VCMA) effect on nanoscale MTJ devices as the driving mechanism for MeRAM will be introduced. Experimental results on the demonstration of current-assisted and purely voltage-controlled switching in the thermally-activated and precessional regimes are presented. The write energies in VCMA-driven switching of nanoscale MTJs are shown to be at least one order of magnitude smaller compared to STT-based schemes. The advantages and challenges in terms of scalability and energy-efficiency of this voltage-driven approach are discussed. Further, a compact model for co-simulation of VCMA-driven MTJs with CMOS is established and validated against experimental data. The compact model is refined by the parameters extracted from a detailed characterization of the voltage-driven dynamics in these devices. This includes experimental results on the accurate characterization of the temperature dependence of the perpendicular anisotropy and the VCMA effect in MTJs, as well as on the influence of higher

  6. Development and applications of the tunnel junction dc SQUID

    International Nuclear Information System (INIS)

    The development of a cylindrical dc SQUID made with shunted Nb-NbOx-Pb Josephson tunnel junctions is described. The SQUID is current biased at a non-zero voltage, and modulated with a 100 KHz flux. The 100 KHz signal across the SQUID drives a cooled tank circuit that optimally matches the SQUID impedance to the input of a room-temperature FET preamplifier. The SQUID is operated in a flux-locked loop with a dynamic range of +- 3 x 106 (in a 1-Hz bandwidth), a bandwidth of 0 to 2 KHz, and a slewing rate of 2 x 104 phi/sub o/sec-1. A flux noise power spectrum for a SQUID in a superconducting shield at 4.2 K is shown. Above 2 x 10-2 Hz the spectrum is white with an rms value of 10-5 phi/sub o/Hz/sup -1/2/. At lower frequencies the spectrum is approximately 10-10 (1 Hz/f) phi/sub o/2Hz-1, where f is the frequency. Factors contributing to the long term drift of the SQUID are discussed. A drift rate of 2 x 10-5 phi/sub o/h-1 over a 20-h period is achieved by regulating the temperature of the helium bath. A detailed description is given of the coupling of various input coils to the SQUID. The energy resolution of the SQUID with respect to a current in a 24-turn input coil is 7 x 10-30 J Hz-1 in the white noise region. The energy resolution in the l/f noise region and the long term drift performance are better than for any other SQUID

  7. Tunnel magnetoresistance in thermally robust Mo/CoFeB/MgO tunnel junction with perpendicular magnetic anisotropy

    Directory of Open Access Journals (Sweden)

    B. Fang

    2015-06-01

    Full Text Available We report on tunnel magnetoresistance and electric-field effect in the Mo buffered and capped CoFeB/MgO magnetic tunnel junctions (MTJs with perpendicular magnetic anisotropy. A large tunnel magnetoresistance of 120% is achieved. Furthermore, this structure shows greatly improved thermal stability and stronger electric-field-induced modulation effect in comparison with the Ta/CoFeB/MgO-based MTJs. These results suggest that the Mo-based MTJs are more desirable for next generation spintronic devices.

  8. Tunneling magneto thermocurrent in CoFeB/MgO/CoFeB based magnetic tunnel junctions

    OpenAIRE

    Liebing, Niklas; Serrano-Guisan, Santiago; Krzysteczko, Patryk; Rott, Karsten; Reiss, Günter; Langer, Jürgen; Ocker, Berthold; Schumacher, Hans Werner

    2013-01-01

    We study the tunneling magneto thermopower and tunneling magneto thermocurrent of CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJ). The devices show a clear change of the thermoelectric properties upon reversal of the magnetisation of the CoFeB layers from parallel to the antiparallel orientation. When switching from parallel to antiparallel the thermopower increases by up to 55% where as the thermocurrent drops by 45%. These observations can be well explained by the Onsager relations taking i...

  9. Creation of stable molecular junctions with a custom-designed scanning tunneling microscope

    International Nuclear Information System (INIS)

    The scanning tunneling microscope break junction (STMBJ) technique is a powerful approach for creating single-molecule junctions and studying electrical transport in them. However, junctions created using the STMBJ technique are usually mechanically stable for relatively short times (<1 s), impeding detailed studies of their charge transport characteristics. Here, we report a custom-designed scanning tunneling microscope that enables the creation of metal–single molecule–metal junctions that are mechanically stable for more than 1 minute at room temperature. This stability is achieved by a design that minimizes thermal drift as well as the effect of environmental perturbations. The utility of this instrument is demonstrated by performing transition voltage spectroscopy—at the single-molecule level—on Au–hexanedithiol–Au, Au–octanedithiol–Au and Au–decanedithiol–Au junctions.

  10. Submicron area NbN/MgO/NbN tunnel junctions for SIS mixer applications

    Science.gov (United States)

    Leduc, H. G.; Judas, A.; Cypher, S. R.; Bumble, B.; Hunt, B. D.

    1991-01-01

    The development of submicron area mixer elements for operation in the submillimeter wave range is discussed. High-current-density NbN/MgO/NbN tunnel junctions with areas down to 0.1 sq microns have been fabricated in both planar and edge geometries. The planar junctions were fabricated from in situ deposited trilayers using electron-beam lithography to pattern submicron area mesas. Modifications of fabrication techniques used in larger-area NbN tunnel junctions are required and are discussed. The NbN/MgO/NbN edge junction process using sapphire substrates has been transferred to technologically important quartz substrates using MgO buffer layers to minimize substrate interactions. The two junction geometries are compared and contrasted in the context of submillimeter wave mixer applications.

  11. Spin transport and tunnel magnetoresistance in ferromagnetic graphene/Thue–Morse graphene superlattice double junction

    International Nuclear Information System (INIS)

    We have theoretically investigated the spin transport properties and tunnel magnetoresistance of the double junction, which consists of the fifth-stage Thue–Morse graphene superlattice (TMGSL) or periodic graphene superlattice (PGSL) and three ferromagnetic graphene (FG) electrodes. The results indicate that the middle ferromagnetic graphene stripe can lead to obvious defect effect on the conductance. Meanwhile, the FG/TMGSL double junction possesses more marked defect effect when compared to the FG/PGSL double junction, along with larger and more irregular oscillation conductance and tunnel magnetoresistance. - Highlights: • The conductance shows irregular oscillation. • A defect peak appears in the conductance spectrum. • The FG/TMGSL double junction possesses marked defect effect. • The FG/TMGSL double junction has larger TMR

  12. Increased efficiency in multijunction solar cells through the incorporation of semimetallic ErAs nanoparticles into the tunnel junction

    International Nuclear Information System (INIS)

    We report the molecular beam epitaxy growth of Al0.3Ga0.7As/GaAs multijunction solar cells with epitaxial, semimetallic ErAs nanoparticles at the interface of the tunnel junction. The states provided by these nanoparticles reduce the bias required to pass current through the tunnel junction by three orders of magnitude, and therefore drastically reduce the voltage losses in the tunnel junction. We have measured open-circuit voltages which are 97% of the sum of the constituent cells, which result in nearly double the efficiency of our multijunction cell with a conventional tunnel junction

  13. Static properties of small Josephson tunnel junctions in an oblique magnetic field

    DEFF Research Database (Denmark)

    Monaco, Roberto; Aarøe, Morten; Mygind, Jesper;

    2009-01-01

    We have carried out a detailed experimental investigation of the static properties of planar Josephson tunnel junctions in presence of a uniform external magnetic field applied in an arbitrary orientation with respect to the barrier plane. We considered annular junctions, as well as rectangular...... junctions (having both overlap and cross-type geometries) with different barrier aspect ratios. It is shown how most of the experimental findings in an oblique field can be reproduced invoking the superposition principle to combine the classical behavior of electrically small junctions in an in-plane field...

  14. Anisotropic tunneling magnetoresistance in GaMnAs/AlAs/GaMnAs ferromagnetic semiconductor tunnel junctions

    International Nuclear Information System (INIS)

    We have observed very large tunneling magnetoresistance (TMR) in Ga1-xMnxAs/AlAs/Ga1-xMnxAs ferromagnetic semiconductor tunnel junctions. A TMR ratio as high as 75% was obtained in a junction with a thin (1.5 nm) AlAs tunnel barrier when the magnetic field was applied along the [100] axis in the film plane. The TMR ratio decreased when the applied magnetic field direction was along the [1 bar 10] and [110]. This anisotropic TMR was found to be explained by the single-domain theory assuming cubic magnetic anisotropy with the easy axis of , which is induced by the zincblende-type Ga1-xMnxAs crystal structure. [copyright] 2001 American Institute of Physics

  15. The p recombination layer in tunnel junctions for micromorph tandem solar cells

    Science.gov (United States)

    Yao, Wen-Jie; Zeng, Xiang-Bo; Peng, Wen-Bo; Liu, Shi-Yong; Xie, Xiao-Bing; Wang, Chao; Liao, Xian-Bo

    2011-07-01

    A new tunnel recombination junction is fabricated for n—i—p type micromorph tandem solar cells. We insert a thin heavily doped hydrogenated amorphous silicon (a-Si:H) p+ recombination layer between the n a-Si:H and the p hydrogenated nanocrystalline silicon (nc-Si:H) layers to improve the performance of the n—i—p tandem solar cells. The effects of the boron doping gas ratio and the deposition time of the p-a-Si:H recombination layer on the tunnel recombination junctions have been investigated. The current-voltage characteristic of the tunnel recombination junction shows a nearly ohmic characteristic, and the resistance of the tunnel recombination junction can be as low as 1.5 Ω·cm2 by using the optimized p-a-Si:H recombination layer. We obtain tandem solar cells with open circuit voltage Voc = 1.4 V, which is nearly the sum of the Vocs of the two corresponding single cells, indicating no Voc losses at the tunnel recombination junction.

  16. Fluctuations of the peak current of tunnel diodes in multi-junction solar cells

    International Nuclear Information System (INIS)

    Interband tunnel diodes are widely used to electrically interconnect the individual subcells in multi-junction solar cells. Tunnel diodes have to operate at high current densities and low voltages, especially when used in concentrator solar cells. They represent one of the most critical elements of multi-junction solar cells and the fluctuations of the peak current in the diodes have an essential impact on the performance and reliability of the devices. Recently we have found that GaAs tunnel diodes exhibit extremely high peak currents that can be explained by resonant tunnelling through defects homogeneously distributed in the junction. Experiments evidence rather large fluctuations of the peak current in the diodes fabricated from the same wafer. It is a challenging task to clarify the reason for such large fluctuations in order to improve the performance of the multi-junction solar cells. In this work we show that the large fluctuations of the peak current in tunnel diodes can be caused by relatively small fluctuations of the dopant concentration. We also show that the fluctuations of the peak current become smaller for deeper energy levels of the defects responsible for the resonant tunnelling.

  17. Josephson tunnel junctions as fast nuclear particle position detectors

    International Nuclear Information System (INIS)

    We present here some problems and solutions in using Josephson junctions as fast nuclear particle position detectors. The process of induced switching is modelled in terms of a reduction of the critical current due to a disturbed volume: the hot spot. The spurious thermal induced switching process is also taken into account. Calculations in order to choose the junction parameters are presented. The all refractory junction fabrication technology developed is capable of satisfying design prescriptions. (orig.)

  18. Junction size dependence of ferroelectric properties in e-beam patterned BaTiO3 ferroelectric tunnel junctions

    International Nuclear Information System (INIS)

    We investigate the switching characteristics in BaTiO3-based ferroelectric tunnel junctions patterned in a capacitive geometry with circular Ru top electrode with diameters ranging from ∼430 to 2300 nm. Two different patterning schemes, viz., lift-off and ion-milling, have been employed to examine the variations in the ferroelectric polarization, switching, and tunnel electro-resistance resulting from differences in the pattering processes. The values of polarization switching field are measured and compared for junctions of different diameter in the samples fabricated using both patterning schemes. We do not find any specific dependence of polarization switching bias on the size of junctions in both sample stacks. The junctions in the ion-milled sample show up to three orders of resistance change by polarization switching and the polarization retention is found to improve with increasing junction diameter. However, similar switching is absent in the lift-off sample, highlighting the effect of patterning scheme on the polarization retention

  19. Bias-voltage controlled resistance in a magnetic tunneling junction with an inserted thin metallic layer

    International Nuclear Information System (INIS)

    We apply the spin-polarized free-electron model to study the resistance change in a ferromagnet/metal/insulator/ferromagnet magnetic tunneling junction, and find two types of resistance change. One type is varied by the magnetization configuration between two ferromagnetic layers, and the other type is controlled by the polarity of the bias-voltage. The former is the so-called tunneling magnetoresistance, and the latter is named the bias-voltage controlled resistance. Under suitable conditions, we show that both resistance changes resulting from the bias-voltage controlled resistance and the tunneling magnetoresistance are equal in magnitude, and are larger than the resistance change in a conventional ferromagnet/insulator/ferromagnet magnetic tunneling junction. - Highlights: • The structure is a magnetic tunneling junction with an inserted metallic layer. • The phase factor of an electron across the metal is crucial for the resistance. • Different tunneling processes correspond to different phases. • The polarity of a bias voltage can be exploited to switch the tunneling process. • The alternation of the polarity of a bias voltage leads to the resistance change

  20. Electrical characteristics and interface structure of magnetic tunnel junctions with aluminum oxyfluoride barrier

    International Nuclear Information System (INIS)

    The effects of fluorine inclusion in the aluminum oxide tunnel barrier on the electrical characteristics and the interface structure of magnetic tunnel junctions were studied. Compared with conventional junctions without fluorine, the fluorine-containing junctions exhibit larger and nearly constant tunneling magnetoresistance (TMR) values over a wide range of oxidation times and exhibit a smaller bias dependence for TMR. X-ray photoelectron spectroscopy indicates that the fluorine forms an aluminum oxyfluoride barrier together with an oxygen and that the fluorine-rich oxyfluoride layer at the barrier top surface plays an important role in the formation of the highly insulating barrier, resulting in nearly ideal barrier/electrode interfaces without a detrimental magnetically dead layer

  1. Evidence for Defect-Mediated Tunneling in Hexagonal Boron Nitride-Based Junctions.

    Science.gov (United States)

    Chandni, U; Watanabe, K; Taniguchi, T; Eisenstein, J P

    2015-11-11

    We investigate electron tunneling through atomically thin layers of hexagonal boron nitride (hBN). Metal (Cr/Au) and semimetal (graphite) counter-electrodes are employed. While the direct tunneling resistance increases nearly exponentially with barrier thickness as expected, the thicker junctions also exhibit clear signatures of Coulomb blockade, including strong suppression of the tunnel current around zero bias and step-like features in the current at larger biases. The voltage separation of these steps suggests that single-electron charging of nanometer-scale defects in the hBN barrier layer are responsible for these signatures. We find that annealing the metal-hBN-metal junctions removes these defects and the Coulomb blockade signatures in the tunneling current. PMID:26509431

  2. Band structure of topological insulators from noise measurements in tunnel junctions

    International Nuclear Information System (INIS)

    The unique properties of spin-polarized surface or edge states in topological insulators (TIs) make these quantum coherent systems interesting from the point of view of both fundamental physics and their implementation in low power spintronic devices. Here we present such a study in TIs, through tunneling and noise spectroscopy utilizing TI/Al2O3/Co tunnel junctions with bottom TI electrodes of either Bi2Te3 or Bi2Se3. We demonstrate that features related to the band structure of the TI materials show up in the tunneling conductance and even more clearly through low frequency noise measurements. The bias dependence of 1/f noise reveals peaks at specific energies corresponding to band structure features of the TI. TI tunnel junctions could thus simplify the study of the properties of such quantum coherent systems that can further lead to the manipulation of their spin-polarized properties for technological purposes

  3. Dual Control of Giant Field-like Spin Torque in Spin Filter Tunnel Junctions

    OpenAIRE

    Y. -H. Tang; F. -C. Chu; Nicholas Kioussis

    2015-01-01

    We predict a giant field-like spin torque, , in spin-filter (SF) barrier tunnel junctions in sharp contrast to existing junctions based on nonmagnetic passive barriers. We demonstrate that has linear bias behavior, is independent of the SF thickness, and has odd parity with respect to the SF’s exchange splitting. Thus, it can be selectively controlled via external bias or external magnetic field which gives rise to sign reversal of via magnetic field switching. The underlying mechanism is the...

  4. First-Principles Simulations of Inelastic Electron Tunneling Spectroscopyof Molecular Junctions

    OpenAIRE

    Jiang, Jun; Kula, Mathias; Lu, Wei; Luo, Yi

    2005-01-01

    A generalized Green's function theory is developed to simulate the inelastic electron tunneling spectroscopy (IETS) of molecular junctions. It has been applied to a realistic molecular junction with an octanedithiolate embedded between two gold contacts in combination with the hybrid density functional theory calculations. The calculated spectra are in excellent agreement with recent experimental results. Strong temperature dependence of the experimental IETS spectra is also reproduced. It is...

  5. Epitaxial MgO layer for low-resistance and coupling-free magnetic tunnel junctions

    International Nuclear Information System (INIS)

    Epitaxially grown magnetic tunnel junctions MgO(100)/Fe/MgO/Fe/Co/Pd have been elaborated by molecular beam epitaxy, with insulating layer thickness down to 0.8 nm. The continuity of this layer was checked at different spatial scales by means of morphological (high resolution transmission electronic microscopy), electric (local impedance), and magnetic (magnetoresistance and hysteresis loop) measurements. These junctions show a low resistance (4 kΩ μm2), tunnel magnetoresistance up to 17%, and a very small interlayer magnetic coupling

  6. Improved tunneling magnetoresistance at low temperature in manganite junctions grown by molecular beam epitaxy

    OpenAIRE

    Werner, Robert; Petrov, Alexandr Yu.; Mino, Lucero Alvarez; Kleiner, Reinhold; Koelle, Dieter; Davidson, Bruce A.

    2011-01-01

    We report resistance versus magnetic field measurements for a La0.65Sr0.35MnO3/SrTiO3/La0.65Sr0.35MnO3 tunnel junction grown by molecular-beam epitaxy, that show a large field window of extremely high tunneling magnetoresistance (TMR) at low temperature. Scanning the in-plane applied field orientation through 360^/circ, the TMR shows 4-fold symmetry, i.e. biaxial anisotropy, aligned with the crystalline axes but not the junction geometrical long axis. The TMR reaches ~ 1900% at 4K, correspond...

  7. Monolithic interconnected module with a tunnel junction for enhanced electrical and optical performance

    Science.gov (United States)

    Murray, Christopher S.; Wilt, David M.

    2000-01-01

    An improved thermophotovoltaic (TPV) n/p/n device is provided. Monolithic Interconnected Modules (MIMS), semiconductor devices converting infrared radiation to electricity, have been developed with improved electrical and optical performance. The structure is an n-type emitter on a p-type base with an n-type lateral conduction layer. The incorporation of a tunnel junction and the reduction in the amount of p-type material used results in negligible parasitic absorption, decreased series resistance, increased voltage and increased active area. The novel use of a tunnel junction results in the potential for a TPV device with efficiency greater than 24%.

  8. Investigation of the Mn3 Ga/MgO interface for magnetic tunneling junctions

    OpenAIRE

    Viol Barbosa, Carlos Eduardo; Ouardi, Siham; Kubota, T.; Mizukami, S.; Fecher, Gerhard H.; Miyazaki, T.; Kozina, Xeniya; Ikenaga, E.; Felser, Claudia

    2014-01-01

    The Mn$_3$Ga Heusler compound and related alloys are the most promising materials for the realization of spin-transfer-torque switching in magneto tunneling junctions. Improved performance can be achieved by high quality interfaces in these multilayered structured devices. In this context, the interface between Mn$_{1.63}$Ga and MgO is of particular interest because of its spin polarization properties in tunneling junctions. We performed a chemical characterization of the MgO/Mn$_{1.63}$Ga ju...

  9. Asymmetric interfacial scattering effect on tunneling conductance of ferromagnet/superconductor/ferromagnet junctions

    Energy Technology Data Exchange (ETDEWEB)

    Pasanai, K., E-mail: krisakronmsu@gmail.com

    2015-07-01

    The tunneling conductance spectra of a magnetic tunnel junction between ferromagnet/superconductor/ferromagnet material interfaces were theoretically studied using the scattering approach in a two dimensional system. As the main area of interest, the interfacial scattering at the two interfaces was modeled by Dirac delta potentials and set to be unequal in their values to verify which potential was more sensitive to the conductance spectra of the junctions. It was found that the conductance spectra in the region where the energy was less than the energy gap of the superconductor were sensitive to the potential strength at the first interface that is the incident side of an electron. When the electron was injected from different sides of the junctions, the conductance spectra of these two incident processes were different in magnitude in the case of asymmetric scattering potential. Particularly, the greater the different values of the two potential strengths, the larger the difference in the conductance spectra. This result can be used to identify the quality of a magnetic tunnel junction that is composed of a superconductor material. Moreover, the effect of the exchange energy and the superconducting thickness on the transport properties was analyzed. - Author-Highlights: • The conductance spectra of a FM/SC/FM were calculated. • The scattering potentials at the interfaces were set to be asymmetric. • The results show a method to verify the quality of the magnetic tunnel junctions.

  10. Asymmetric interfacial scattering effect on tunneling conductance of ferromagnet/superconductor/ferromagnet junctions

    International Nuclear Information System (INIS)

    The tunneling conductance spectra of a magnetic tunnel junction between ferromagnet/superconductor/ferromagnet material interfaces were theoretically studied using the scattering approach in a two dimensional system. As the main area of interest, the interfacial scattering at the two interfaces was modeled by Dirac delta potentials and set to be unequal in their values to verify which potential was more sensitive to the conductance spectra of the junctions. It was found that the conductance spectra in the region where the energy was less than the energy gap of the superconductor were sensitive to the potential strength at the first interface that is the incident side of an electron. When the electron was injected from different sides of the junctions, the conductance spectra of these two incident processes were different in magnitude in the case of asymmetric scattering potential. Particularly, the greater the different values of the two potential strengths, the larger the difference in the conductance spectra. This result can be used to identify the quality of a magnetic tunnel junction that is composed of a superconductor material. Moreover, the effect of the exchange energy and the superconducting thickness on the transport properties was analyzed. - Author-Highlights: • The conductance spectra of a FM/SC/FM were calculated. • The scattering potentials at the interfaces were set to be asymmetric. • The results show a method to verify the quality of the magnetic tunnel junctions

  11. Hybrid tunnel junction contacts to III-nitride light-emitting diodes

    Science.gov (United States)

    Young, Erin C.; Yonkee, Benjamin P.; Wu, Feng; Oh, Sang Ho; DenBaars, Steven P.; Nakamura, Shuji; Speck, James S.

    2016-02-01

    In this work, we demonstrate highly doped GaN p-n tunnel junction (TJ) contacts on III-nitride heterostructures where the active region of the device and the top p-GaN layers were grown by metal organic chemical vapor deposition and highly doped n-GaN was grown by NH3 molecular beam epitaxy to form the TJ. The regrowth interface in these hybrid devices was found to have a high concentration of oxygen, which likely enhanced tunneling through the diode. For optimized regrowth, the best tunnel junction device had a total differential resistivity of 1.5 × 10-4 Ω cm2, including contact resistance. As a demonstration, a blue-light-emitting diode on a (20\\bar{2}\\bar{1}) GaN substrate with a hybrid tunnel junction and an n-GaN current spreading layer was fabricated and compared with a reference sample with a transparent conducting oxide (TCO) layer. The tunnel junction LED showed a lower forward operating voltage and a higher efficiency at a low current density than the TCO LED.

  12. Circuit model for spin-bottleneck resistance in magnetic-tunnel-junction devices

    OpenAIRE

    Jungwirth, T.; MacDonald, A. H.

    1998-01-01

    Spin-bottlenecks are created in magnetic-tunnel-junction devices by spatial inhomogeneity in the relative resistances for up and down spins. We propose a simple electrical circuit model for these devices which incorporates spin-bottleneck effects and can be used to calculate their overall resistance and magnetoresistance. The model permits a simple understanding of the dependence of device magnetoresistance on spin diffusion lengths, tunneling magnetoresistance, and majority and minority spin...

  13. Negative tunnelling magnetoresistance in spin filtering magnetic junctions with spin-orbit coupling

    Institute of Scientific and Technical Information of China (English)

    Li Yun

    2011-01-01

    We present theoretical calculations of spin transport in spin filtering magnetic tunnelling junctions based on the Landauer-Büttiker formalism and taking into account the spin-orbit coupling (SOC). It is shown that spin-flip scattering induced by SOC is stronger in parallel alignment of magnetization of the ferromegnet barrier (FB) and the ferromagnetic electrode than that in antiparallel case. The increase of negative tunnelling magnetoresistance with bias is in agreement with recent experimental observation.

  14. Quantum-limited detection of millimeter waves using superconducting tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Mears, C.A.

    1991-09-01

    The quasiparticle tunneling current in a superconductor-insulator- superconductor (SIS) tunnel junction is highly nonlinear. Such a nonlinearity can be used to mix two millimeter wave signals to produce a signal at a much lower intermediate frequency. We have constructed several millimeter and sub-millimeter wave SIS mixers in order to study high frequency response of the quasiparticle tunneling current and the physics of high frequency mixing. We have made the first measurement of the out-of-phase tunneling currents in an SIS tunnel junction. We have developed a method that allows us to determine the parameters of the high frequency embedding circuit by studying the details of the pumped I-V curve. We have constructed a 80--110 GHz waveguide-based mixer test apparatus that allows us to accurately measure the gain and added noise of the SIS mixer under test. Using extremely high quality tunnel junctions, we have measured an added mixer noise of 0.61 {plus_minus} 0.36 quanta, which is within 25 percent of the quantum limit imposed by the Heisenberg uncertainty principle. This measured performance is in excellent agreement with that predicted by Tucker`s theory of quantum mixing. We have also studied quasioptically coupled millimeter- and submillimeter-wave mixers using several types of integrated tuning elements. 83 refs.

  15. Quantum-limited detection of millimeter waves using superconducting tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Mears, C.A.

    1991-09-01

    The quasiparticle tunneling current in a superconductor-insulator- superconductor (SIS) tunnel junction is highly nonlinear. Such a nonlinearity can be used to mix two millimeter wave signals to produce a signal at a much lower intermediate frequency. We have constructed several millimeter and sub-millimeter wave SIS mixers in order to study high frequency response of the quasiparticle tunneling current and the physics of high frequency mixing. We have made the first measurement of the out-of-phase tunneling currents in an SIS tunnel junction. We have developed a method that allows us to determine the parameters of the high frequency embedding circuit by studying the details of the pumped I-V curve. We have constructed a 80--110 GHz waveguide-based mixer test apparatus that allows us to accurately measure the gain and added noise of the SIS mixer under test. Using extremely high quality tunnel junctions, we have measured an added mixer noise of 0.61 {plus minus} 0.36 quanta, which is within 25 percent of the quantum limit imposed by the Heisenberg uncertainty principle. This measured performance is in excellent agreement with that predicted by Tucker's theory of quantum mixing. We have also studied quasioptically coupled millimeter- and submillimeter-wave mixers using several types of integrated tuning elements. 83 refs.

  16. Quantum-limited detection of millimeter waves using superconducting tunnel junctions

    International Nuclear Information System (INIS)

    The quasiparticle tunneling current in a superconductor-insulator- superconductor (SIS) tunnel junction is highly nonlinear. Such a nonlinearity can be used to mix two millimeter wave signals to produce a signal at a much lower intermediate frequency. We have constructed several millimeter and sub-millimeter wave SIS mixers in order to study high frequency response of the quasiparticle tunneling current and the physics of high frequency mixing. We have made the first measurement of the out-of-phase tunneling currents in an SIS tunnel junction. We have developed a method that allows us to determine the parameters of the high frequency embedding circuit by studying the details of the pumped I-V curve. We have constructed a 80--110 GHz waveguide-based mixer test apparatus that allows us to accurately measure the gain and added noise of the SIS mixer under test. Using extremely high quality tunnel junctions, we have measured an added mixer noise of 0.61 ± 0.36 quanta, which is within 25 percent of the quantum limit imposed by the Heisenberg uncertainty principle. This measured performance is in excellent agreement with that predicted by Tucker's theory of quantum mixing. We have also studied quasioptically coupled millimeter- and submillimeter-wave mixers using several types of integrated tuning elements. 83 refs

  17. Vortex penetration and self-resonant effects in large Josephson tunnel junction

    International Nuclear Information System (INIS)

    Discontinuity in the resonant voltage (traveling wave resonance) as a function of applied magnetic field has been observed in large Josephson tunnel junctions. It is believed that our results can be explained in terms of peculiar magnetic properties of large junctions of finite length L>>lambda/sub J/, i.e., the quantization of internal fields and magnetic hysteresis. The discontinuity corresponds to the change of number of vortices penetrating the junction barrier. The experimental voltage jumps are in fairly good agreement with these calculated from the theory

  18. Macroscopic quantum tunneling in a stack of capacitively-coupled intrinsic Josephson junctions

    Science.gov (United States)

    Koyama, Tomio; Machida, Masahiko

    2008-04-01

    A macroscopic quantum theory for the phase dynamics in capacitively-coupled intrinsic Josephson junctions (IJJ's) is constructed. We quantize the capacitively-coupled IJJ model in terms of the canonical quantization method. The multi-junction effect for the macroscopic quantum tunneling (MQT) to the first resistive branch is clarified. It is shown that the escape rate is greatly enhanced by the capacitive coupling between junctions. We also discuss the origin of the N2 -enhancement in the escape rate observed in the uniformly switching in Bi-2212 IJJ's.

  19. Search for Second-Order Josephson tunneling in SFS Josephson junctions

    Science.gov (United States)

    Frolov, S. M.; Oboznov, V. A.

    2005-03-01

    SFS (Superconductor-Ferromagnet-Superconductor) Josephson junctions can exhibit transitions between ordinary Josephson (0-junction) tunneling and pi-junction behavior as a function of barrier thickness or temperature. Close to the 0-π crossover at which the first-order Josephson component vanishes, it has been predicted that second-order Josephson tunneling, characterized by a sin(2φ) component in the supercurrent, can dominate. If present, this component can be detected directly by measurements of the current-phase relation and can induce period doubling in the critical current diffraction patterns and generate half-integer Shapiro steps. However, such effects can also arise near the 0-π transition from a distribution of 0-junction and π-junction regions due to a non-uniform ferromagnetic barrier. We compare the results of measurements on junctions with uniform and non-uniform ferromagnetic barriers to determine whether observed second harmonics arise from a microscopic sin(2φ) component or from junction non-uniformity.

  20. Elliptic annular Josephson tunnel junctions in an external magnetic field: the statics

    DEFF Research Database (Denmark)

    Monaco, Roberto; Granata, Carmine; Vettoliere, Antonio;

    2015-01-01

    We have investigated the static properties of one-dimensional planar Josephson tunnel junctions (JTJs) in the most general case of elliptic annuli. We have analyzed the dependence of the critical current in the presence of an external magnetic field applied either in the junction plane or in the...... perpendicular direction. We report a detailed study of both short and long elliptic annular junctions having different eccentricities. For junctions having a normalized perimeter less than one the threshold curves are derived and computed even in the case with one trapped Josephson vortex. For longer junctions...... a numerical analysis is carried out after the derivation of the appropriate perturbed sine-Gordon equation. For a given applied field we find that a number of different phase profiles exist which differ according to the number of fluxon-antifluxon pairs. We demonstrate that in samples made by...

  1. Etch-stop technique for patterning of tunnel junctions for a magnetic field sensor

    International Nuclear Information System (INIS)

    Spin-dependent tunnelling devices, e.g. magnetic random access memories and highly sensitive tunnelling magnetoresistance (TMR) sensors, often consist of a large number of magnetic tunnel junctions (MTJs) of uniform quality over the whole device. The uniformity and yield of the fabrication of such a device are therefore very important. A major source of yield loss is the short-circuiting of junctions by redeposition of etch residues. This can be prevented by terminating of the etch in the typically 1 nm thick tunnelling barrier. Here, electron spectroscopy for chemical analysis for monitoring the etching semi-continuously is proposed. The fabrication scheme employs Ar ion milling for etching the MTJs, and photoelectron spectroscopy for analysing the composition of the etched surface in situ. Junctions etched either to or through the barrier were used for this. The quality of the etch stop was investigated using transmission electron microscopy (TEM), and it was confirmed that the etch could be stopped in the MgO barrier. The TEM imaging also showed clear signs of redeposition. Such redeposition was attributed to being partly caused by the reduction of the TMR ratio of the junctions etched through the barrier, which was only 15% as compared with 150% for junctions etched to the barrier. Also, the latter junctions exhibited 2.7 times less noise in the low-frequency regime, resulting in a 27 times improvement of the signal-to-noise ratio with the etch stop. The barrier also proved effective in protecting the bottom contact from oxidation during the capping and contacting of the junctions.

  2. Normal-state conductance used to probe superconducting tunnel junctions for quantum computing

    Science.gov (United States)

    Chaparro, Carlos; Bavier, Richard; Kim, Yong-Seung; Kim, Eunyoung; Kline, Jeffrey S.; Pappas, David P.; Oh, Seongshik

    2010-04-01

    Here we report normal-state conductance measurements of three different types of superconducting tunnel junctions that are being used or proposed for quantum computing applications: p-Al/a-AlO/p-Al, e-Re/e-AlO/p-Al, and e-V/e-MgO/p-V, where p stands for polycrystalline, e for epitaxial, and a for amorphous. All three junctions exhibited significant deviations from the parabolic behavior predicted by the WKB approximation models. In the p-Al/a-AlO/p-Al junction, we observed enhancement of tunneling conductances at voltages matching harmonics of Al-O stretching modes. On the other hand, such Al-O vibration modes were missing in the epitaxial e-Re/e-AlO/p-Al junction. This suggests that absence or existence of the Al-O stretching mode might be related to the crystallinity of the AlO tunnel barrier and the interface between the electrode and the barrier. In the e-V/e-MgO/p-V junction, which is one of the candidate systems for future superconducting qubits, we observed suppression of the density of states at zero bias. This implies that the interface is electronically disordered, presumably due to oxidation of the vanadium surface underneath the MgO barrier, even if the interface was structurally well ordered, suggesting that the e-V/e-MgO/p-V junction will not be suitable for qubit applications in its present form. This also demonstrates that the normal-state conductance measurement can be effectively used to screen out low quality samples in the search for better superconducting tunnel junctions.

  3. Performance analysis of AlGaAs/GaAs tunnel junctions for ultra-high concentration photovoltaics

    International Nuclear Information System (INIS)

    An n++-GaAs/p++-AlGaAs tunnel junction with a peak current density of 10 100 A cm-2 is developed. This device is a tunnel junction for multijunction solar cells, grown lattice-matched on standard GaAs or Ge substrates, with the highest peak current density ever reported. The voltage drop for a current density equivalent to the operation of the multijunction solar cell up to 10 000 suns is below 5 mV. Trap-assisted tunnelling is proposed to be behind this performance, which cannot be justified by simple band-to-band tunnelling. The metal-organic vapour-phase epitaxy growth conditions, which are in the limits of the transport-limited regime, and the heavy tellurium doping levels are the proposed origins of the defects enabling trap-assisted tunnelling. The hypothesis of trap-assisted tunnelling is supported by the observed annealing behaviour of the tunnel junctions, which cannot be explained in terms of dopant diffusion or passivation. For the integration of these tunnel junctions into a triple-junction solar cell, AlGaAs barrier layers are introduced to suppress the formation of parasitic junctions, but this is found to significantly degrade the performance of the tunnel junctions. However, the annealed tunnel junctions with barrier layers still exhibit a peak current density higher than 2500 A cm-2 and a voltage drop at 10 000 suns of around 20 mV, which are excellent properties for tunnel junctions and mean they can serve as low-loss interconnections in multijunction solar cells working at ultra-high concentrations. (paper)

  4. Spin diode based on Fe/MgO double tunnel junction.

    Science.gov (United States)

    Iovan, A; Andersson, S; Naidyuk, Yu G; Vedyaev, A; Dieny, B; Korenivski, V

    2008-03-01

    We demonstrate a spin diode consisting of a semiconductor-free nanoscale Fe/MgO-based double tunnel junction. The device exhibits a near perfect spin-valve effect combined with a strong diode effect. The mechanism consistent with our data is resonant tunneling through discrete states in the middle ferromagnetic layer sandwiched by tunnel barriers of different spin-dependent transparency. The observed magnetoresistance is a record high>1000%, essentially making the structure an on/off spin switch. This, combined with the strong diode effect, approximately 100, demonstrates a new device principle, promising for memory and reprogrammable logic applications. PMID:18284216

  5. Spin Diode Based on Fe/MgO Double Tunnel Junction

    OpenAIRE

    Iovan, A.; Andersson, S; Naidyuk, Yu. G.; Vedyaev, A.; Dieny, B.; Korenivski, V.

    2007-01-01

    We demonstrate a spin diode consisting of a semiconductor free nano-scale Fe/MgO-based double tunnel junction. The device exhibits a near perfect spin-valve effect combined with a strong diode effect. The mechanism consistent with our data is resonant tunneling through discrete states in the middle ferromagnetic layer sandwiched by tunnel barriers of different spin-dependent transparency. The observed magneto-resistance is record high, ~4000%, essentially making the structure an on/off spin-s...

  6. Flicker (1/f) noise in Josephson tunnel junctions

    International Nuclear Information System (INIS)

    The power spectrum was measured of the voltage fluctuations in shunted Josephson junctions biased at a constant current I greater than the critical current I/sub c/. Over the frequency range 5 x 10-2 to 50 Hz, the power spectra vary approximately as 1/f, where f is the frequency. At any single frequency, the noise decreases as I is increased. Experimental evidence is presented to show that the voltage noise arises from equilibrium fluctuations in the temperature T of the junction, which in turn modulate I/sub c/ and hence the voltage V across the junction. The magnitude of the power spectra is consistently predicted to within a factor of 5 by an extension of the semiempirical formula of Clarke and Voss: S/sub V/(f) = (dI/sub c//dT)2(partialV/partialI/sub c/)2/sub I/k/sub B/T2 / 3C/sub V/f. In this formula, it is postulated that C/sub V/ is the heat capacity of an ''effective'' junction volume given by the product of the junction area and the sum of the coherence lengths of the two superconductors. The dependence of S/sub V/(f) on (partialV/partialI/sub C/)2/sub I/ and (dI/sub c//dT)2 is experimentally established

  7. Optically controlled electroresistance and electrically controlled photovoltage in ferroelectric tunnel junctions

    KAUST Repository

    Jin Hu, Wei

    2016-02-29

    Ferroelectric tunnel junctions (FTJs) have recently attracted considerable interest as a promising candidate for applications in the next-generation non-volatile memory technology. In this work, using an ultrathin (3 nm) ferroelectric Sm0.1Bi0.9FeO3 layer as the tunnelling barrier and a semiconducting Nb-doped SrTiO3 single crystal as the bottom electrode, we achieve a tunnelling electroresistance as large as 105. Furthermore, the FTJ memory states could be modulated by light illumination, which is accompanied by a hysteretic photovoltaic effect. These complimentary effects are attributed to the bias- and light-induced modulation of the tunnel barrier, both in height and width, at the semiconductor/ferroelectric interface. Overall, the highly tunable tunnelling electroresistance and the correlated photovoltaic functionalities provide a new route for producing and non-destructively sensing multiple non-volatile electronic states in such FTJs.

  8. Giant magnetothermopower of magnon-assisted transport in ferromagnetic tunnel junctions

    Science.gov (United States)

    McCann, Edward; Fal'Ko, Vladimir I.

    2002-10-01

    We present a theoretical description of the thermopower due to magnon-assisted tunneling in a mesoscopic tunnel junction between two ferromagnetic metals. The thermopower is generated in the course of thermal equilibration between two baths of magnons, mediated by electrons. For a junction between two ferromagnets with antiparallel polarizations, the ability of magnon-assisted tunneling to create thermopower SAP depends on the difference between the size Π↑,↓ of the majority- and minority-band Fermi surfaces and it is proportional to a temperature-dependent factor (kBT/ωD)3/2 where ωD is the magnon Debye energy. The latter factor reflects the fractional change in the net magnetization of the reservoirs due to thermal magnons at temperature T (Bloch's T3/2 law). In contrast, the contribution of magnon-assisted tunneling to the thermopower SP of a junction with parallel polarizations is negligible. As the relative polarizations of ferromagnetic layers can be manipulated by an external magnetic field, a large difference ΔS=SAP-SP~SAP~- (kB/e)f(Π↑,Π↓)(kBT/ωD)3/2 results in a magnetothermopower effect. This magnetothermopower effect becomes giant in the extreme case of a junction between two half-metallic ferromagnets, ΔS~-kB/e.

  9. X-band singly degenerate parametric amplification in a Josephson tunnel junction

    DEFF Research Database (Denmark)

    Mygind, Jesper; Pedersen, Niels Falsig; Sørensen, O. H.

    1978-01-01

    Preliminary measurements on a (quasi-) degenerate parametric amplifier using a single Josephson tunnel junction as the active element is reported. The pump frequency is at 18 GHz and the signal and idler frequencies are both at about 9 GHz. A power gain of 16 dB in a 4-MHz 3-dB bandwidth is...

  10. On-chip measurement of the Brownian relaxation frequency of magnetic beads using magnetic tunneling junctions

    DEFF Research Database (Denmark)

    Donolato, M.; Sogne, E.; Dalslet, Bjarke Thomas;

    2011-01-01

    We demonstrate the detection of the Brownian relaxation frequency of 250 nm diameter magnetic beads using a lab-on-chip platform based on current lines for exciting the beads with alternating magnetic fields and highly sensitive magnetic tunnel junction (MTJ) sensors with a superparamagnetic free...... for biomolecular recognition. (C) 2011 American Institute of Physics. [doi:10.1063/1.3554374]...

  11. Anisotropic Magnetoresistance and Anisotropic Tunneling Magnetoresistance due to Quantum Interference in Ferromagnetic Metal Break Junctions

    DEFF Research Database (Denmark)

    Bolotin, Kirill; Kuemmeth, Ferdinand; Ralph, D

    2006-01-01

    We measure the low-temperature resistance of permalloy break junctions as a function of contact size and the magnetic field angle in applied fields large enough to saturate the magnetization. For both nanometer-scale metallic contacts and tunneling devices we observe large changes in resistance...

  12. CMOS Interface Circuits for Spin Tunneling Junction Based Magnetic Random Access Memories

    Energy Technology Data Exchange (ETDEWEB)

    Ganesh Saripalli

    2002-12-31

    Magneto resistive memories (MRAM) are non-volatile memories which use magnetic instead of electrical structures to store data. These memories, apart from being non-volatile, offer a possibility to achieve densities better than DRAMs and speeds faster than SRAMs. MRAMs could potentially replace all computer memory RAM technologies in use today, leading to future applications like instan-on computers and longer battery life for pervasive devices. Such rapid development was made possible due to the recent discovery of large magnetoresistance in Spin tunneling junction devices. Spin tunneling junctions (STJ) are composite structures consisting of a thin insulating layer sandwiched between two magnetic layers. This thesis research is targeted towards these spin tunneling junction based Magnetic memories. In any memory, some kind of an interface circuit is needed to read the logic states. In this thesis, four such circuits are proposed and designed for Magnetic memories (MRAM). These circuits interface to the Spin tunneling junctions and act as sense amplifiers to read their magnetic states. The physical structure and functional characteristics of these circuits are discussed in this thesis. Mismatch effects on the circuits and proper design techniques are also presented. To demonstrate the functionality of these interface structures, test circuits were designed and fabricated in TSMC 0.35{micro} CMOS process. Also circuits to characterize the process mismatches were fabricated and tested. These results were then used in Matlab programs to aid in design process and to predict interface circuit's yields.

  13. Insulator charging limits direct current across tunneling metal-insulator-semiconductor junctions

    Science.gov (United States)

    Vilan, Ayelet

    2016-01-01

    Molecular electronics studies how the molecular nature affects the probability of charge carriers to tunnel through the molecules. Nevertheless, transport is also critically affected by the contacts to the molecules, an aspect that is often overlooked. Specifically, the limited ability of non-metallic contacts to maintain the required charge balance across the fairly insulating molecule often have dramatic effects. This paper shows that in the case of lead/organic monolayer-silicon junctions, a charge balance is responsible for an unusual current scaling, with the junction diameter (perimeter), rather than its area. This is attributed to the balance between the 2D charging at the metal/insulator interface and the 3D charging of the semiconductor space-charge region. A derivative method is developed to quantify transport across tunneling metal-insulator-semiconductor junctions; this enables separating the tunneling barrier from the space-charge barrier for a given current-voltage curve, without complementary measurements. The paper provides practical tools to analyze specific molecular junctions compatible with existing silicon technology, and demonstrates the importance of contacts' physics in modeling charge transport across molecular junctions.

  14. Insulator charging limits direct current across tunneling metal-insulator-semiconductor junctions

    International Nuclear Information System (INIS)

    Molecular electronics studies how the molecular nature affects the probability of charge carriers to tunnel through the molecules. Nevertheless, transport is also critically affected by the contacts to the molecules, an aspect that is often overlooked. Specifically, the limited ability of non-metallic contacts to maintain the required charge balance across the fairly insulating molecule often have dramatic effects. This paper shows that in the case of lead/organic monolayer-silicon junctions, a charge balance is responsible for an unusual current scaling, with the junction diameter (perimeter), rather than its area. This is attributed to the balance between the 2D charging at the metal/insulator interface and the 3D charging of the semiconductor space-charge region. A derivative method is developed to quantify transport across tunneling metal-insulator-semiconductor junctions; this enables separating the tunneling barrier from the space-charge barrier for a given current-voltage curve, without complementary measurements. The paper provides practical tools to analyze specific molecular junctions compatible with existing silicon technology, and demonstrates the importance of contacts' physics in modeling charge transport across molecular junctions

  15. Insulator charging limits direct current across tunneling metal-insulator-semiconductor junctions

    Energy Technology Data Exchange (ETDEWEB)

    Vilan, Ayelet [Department of Materials and Interfaces, Weizmann Institute of Science, POB 26, Rehovot 76100 (Israel)

    2016-01-07

    Molecular electronics studies how the molecular nature affects the probability of charge carriers to tunnel through the molecules. Nevertheless, transport is also critically affected by the contacts to the molecules, an aspect that is often overlooked. Specifically, the limited ability of non-metallic contacts to maintain the required charge balance across the fairly insulating molecule often have dramatic effects. This paper shows that in the case of lead/organic monolayer-silicon junctions, a charge balance is responsible for an unusual current scaling, with the junction diameter (perimeter), rather than its area. This is attributed to the balance between the 2D charging at the metal/insulator interface and the 3D charging of the semiconductor space-charge region. A derivative method is developed to quantify transport across tunneling metal-insulator-semiconductor junctions; this enables separating the tunneling barrier from the space-charge barrier for a given current-voltage curve, without complementary measurements. The paper provides practical tools to analyze specific molecular junctions compatible with existing silicon technology, and demonstrates the importance of contacts' physics in modeling charge transport across molecular junctions.

  16. Improved tunneling magnetoresistance at low temperature in manganite junctions grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    We report resistance versus magnetic field measurements for a La0.65Sr0.35MnO3/SrTiO3/La0.65Sr0.35MnO3 tunnel junction grown by molecular-beam epitaxy, that show a large field window of extremely high tunneling magnetoresistance (TMR) at low temperature. Scanning the in-plane applied field orientation through 360 deg., the TMR shows fourfold symmetry, i.e., biaxial anisotropy, aligned with the crystalline axis but not the junction geometrical long axis. The TMR reaches ∼1900% at 4 K, corresponding to an interfacial spin polarization of >95% assuming identical interfaces. These results show that uniaxial anisotropy is not necessary for large TMR, and lay the groundwork for future improvements in TMR in manganite junctions.

  17. NbN/MgO/NbN edge-geometry tunnel junctions

    Science.gov (United States)

    Hunt, B. D.; Leduc, H. G.; Cypher, S. R.; Stern, J. A.; Judas, A.

    1989-01-01

    The fabrication and low-frequency testing of the first edge-geometry NbN/MgO/NbN superconducting tunnel junctions are reported. The use of an edge geometry allows very small junction areas to be obtained, while the all-NbN electrodes permit operation at 8-10 K with a potential maximum operating frequency above 1 THz. Edge definition in the base NbN film was accomplished utilizing Ar ion milling with an Al2O3 milling mask, followed by a lower energy ion cleaning step. This process has produced all-refractory-material tunnel junctions with areas as small as 0.1 sq micron, resistance-area products less than 21 ohm sq micron, and subgap to normal state resistance ratios larger than 18.

  18. Giant amplification of tunnel magnetoresistance in a molecular junction: Molecular spin-valve transistor

    International Nuclear Information System (INIS)

    Amplification of tunnel magnetoresistance by gate field in a molecular junction is the most important requirement for the development of a molecular spin valve transistor. Herein, we predict a giant amplification of tunnel magnetoresistance in a single molecular spin valve junction, which consists of Ru-bis-terpyridine molecule as a spacer between two ferromagnetic nickel contacts. Based on the first-principles quantum transport approach, we show that a modest change in the gate field that is experimentally accessible can lead to a substantial amplification (320%) of tunnel magnetoresistance. The origin of such large amplification is attributed to the spin dependent modification of orbitals at the molecule-lead interface and the resultant Stark effect induced shift in channel position with respect to the Fermi energy

  19. Electrostatic control over temperature-dependent tunnelling across a single-molecule junction

    Science.gov (United States)

    Garrigues, Alvar R.; Wang, Lejia; Del Barco, Enrique; Nijhuis, Christian A.

    2016-05-01

    Understanding how the mechanism of charge transport through molecular tunnel junctions depends on temperature is crucial to control electronic function in molecular electronic devices. With just a few systems investigated as a function of bias and temperature so far, thermal effects in molecular tunnel junctions remain poorly understood. Here we report a detailed charge transport study of an individual redox-active ferrocene-based molecule over a wide range of temperatures and applied potentials. The results show the temperature dependence of the current to vary strongly as a function of the gate voltage. Specifically, the current across the molecule exponentially increases in the Coulomb blockade regime and decreases at the charge degeneracy points, while remaining temperature-independent at resonance. Our observations can be well accounted for by a formal single-level tunnelling model where the temperature dependence relies on the thermal broadening of the Fermi distributions of the electrons in the leads.

  20. Giant amplification of tunnel magnetoresistance in a molecular junction: Molecular spin-valve transistor

    Energy Technology Data Exchange (ETDEWEB)

    Dhungana, Kamal B.; Pati, Ranjit, E-mail: patir@mtu.edu [Department of Physics, Michigan Technological University, Houghton, Michigan 49931 (United States)

    2014-04-21

    Amplification of tunnel magnetoresistance by gate field in a molecular junction is the most important requirement for the development of a molecular spin valve transistor. Herein, we predict a giant amplification of tunnel magnetoresistance in a single molecular spin valve junction, which consists of Ru-bis-terpyridine molecule as a spacer between two ferromagnetic nickel contacts. Based on the first-principles quantum transport approach, we show that a modest change in the gate field that is experimentally accessible can lead to a substantial amplification (320%) of tunnel magnetoresistance. The origin of such large amplification is attributed to the spin dependent modification of orbitals at the molecule-lead interface and the resultant Stark effect induced shift in channel position with respect to the Fermi energy.

  1. Electrical control of memristance and magnetoresistance in oxide magnetic tunnel junctions

    KAUST Repository

    Zhang, Kun

    2015-01-01

    Electric-field control of magnetic and transport properties of magnetic tunnel junctions has promising applications in spintronics. Here, we experimentally demonstrate a reversible electrical manipulation of memristance, magnetoresistance, and exchange bias in Co/CoO–ZnO/Co magnetic tunnel junctions, which enables the realization of four nonvolatile resistance states. Moreover, greatly enhanced tunneling magnetoresistance of 68% was observed due to the enhanced spin polarization of the bottom Co/CoO interface. The ab initio calculations further indicate that the spin polarization of the Co/CoO interface is as high as 73% near the Fermi level and plenty of oxygen vacancies can induce metal–insulator transition of the CoO1−v layer. Thus, the electrical manipulation mechanism on the memristance, magnetoresistance and exchange bias can be attributed to the electric-field-driven migration of oxygen ions/vacancies between very thin CoO and ZnO layers.

  2. Gaussian tunneling model of c-axis twist Josephson junctions

    International Nuclear Information System (INIS)

    We calculate the critical current density JcJ((varphi)0) for Josephson tunneling between identical high-temperature superconductors twisted an angle (varphi)0 about the c axis. Regardless of the shape of the two-dimensional Fermi surface and for very general tunneling matrix elements, an order parameter (OP) with general d-wave symmetry leads to JcJ(π/4)=0. This general result is inconsistent with the data of Li et al. [Phys. Rev. Lett. 83, 4160 (1999)] on Bi2Sr2CaCu2O8+δ (Bi2212), which showed JcJ to be independent of (varphi)0. If the momentum parallel to the barrier is conserved in the tunneling process, JcJ should vary substantially with the twist angle (varphi)0 when the tight-binding Fermi surface appropriate for Bi2212 is taken into account, even if the OP is completely isotropic. We quantify the degree of momentum nonconservation necessary to render JcJ((varphi)0) constant within experimental error for a variety of pair states by interpolating between the coherent and incoherent limits using five specific models to describe the momentum dependence of the tunneling matrix element squared. From the data of Li et al., we conclude that the c-axis tunneling in Bi2212 must be very nearly incoherent, and that the OP must have a nonvanishing Fermi-surface average for Tc. We further show that the apparent conventional sum-rule violation observed by Basov et al. [Science 283, 49 (1999)] can be consistent with such strongly incoherent c-axis tunneling.

  3. Dynamical image-charge effect in molecular tunnel junctions

    DEFF Research Database (Denmark)

    Jin, Chengjun; Thygesen, Kristian Sommer

    2014-01-01

    When an electron tunnels between two metal contacts it temporarily induces an image charge (IC) in the electrodes which acts back on the tunneling electron. It is usually assumed that the IC forms instantaneously such that a static model for the image potential applies. Here we investigate how the...... finite IC formation time affects charge transport through a molecule suspended between two electrodes. For a single-level model, an analytical treatment shows that the conductance is suppressed by a factor Z(2), where Z is the quasiparticle renormalization factor, compared to the static IC approximation...

  4. Macroscopic quantum tunnelling in a current biased Josephson junction

    International Nuclear Information System (INIS)

    We discuss in this work an attempt to answer experimentally the question: do macroscopic variables obey quantum mechanics. More precisely, this experiment deals with the question of quantum-mechanical tunnelling of a macroscopic variable, a subject related to the famous Schrodinger's cat problem in the theory of measurement

  5. A theoretical study of magnetoelectronic and switching properties of molecular magnetic tunnel junctions

    Science.gov (United States)

    Soti, V.; Ravan, B. Abedi

    2016-01-01

    Electronic transport and switching properties of molecule-based magnetic tunnel junctions are investigated using the first-principles density functional theory and non-equilibrium Green function methods. As a result of being sandwiched between the ferromagnetic electrodes, a spin-polarization is induced in the nonmagnetic organic atoms. Magnitudes of the spin-polarizations in the trans-polyacetylene, cis-polyacetylene, terphenyl and pentacene chains are calculated and it is suggested that among these the pentacene molecules, because of showing a relatively higher magnetization can theoretically be more appropriate for utilization in spintronic devices. Furthermore, electrical switching capabilities of the junctions are studied and the results reveal that the pentacene junction due to having a larger ON/OFF ratio shows a better switching behavior. Finally, magnetoresistive properties are studied and it is shown that applying torsion can be an effective method to enhance and also adjust magnitudes of the magnetoresistances of the junctions.

  6. Proximity effects in all refractory niobium tunnel junctions with a metal back-layer

    International Nuclear Information System (INIS)

    Josephson devices based on niobium technology are widely used for many applications, so a very high quality is a mandatory characteristic of Nb/Nb Josephson tunnel junctions. The occurrence of proximity effect is the most relevant aspect in determining their quality. Up to now Nb-Al/AlOx/Nb and Nb-Al/AlOx/Al-Nb structures have been studied from both the experimental and theoretical point of view. On the contrary less information is available on Nb/Nb Josephson junctions with a metal back-layer (M-Nb/AlOx/Nb). This is not a minor point in respect to some specific applications. The present paper reports a novel procedure to fabricate high quality Nb/Nb junctions with a back-layer together with preliminary measurements on Al-Nb/AlOx/Nb junctions. (orig.)

  7. Magnetoresistance of galfenol-based magnetic tunnel junction

    OpenAIRE

    Gobaut, B.; Vinai, G.; C. Castán-Guerrero; Krizmancic, D.; Rafaqat, H.; Roddaro, S.; Rossi, G; G. Panaccione; Eddrief, M; Marangolo, M; P. Torelli

    2015-01-01

    The manipulation of ferromagnetic layer magnetization via electrical pulse is driving an intense research due to the important applications that this result will have on memory devices and sensors. In this study we realized a magnetotunnel junction in which one layer is made of Galfenol (Fe1-xGax) which possesses one of the highest magnetostrictive coefficient known. The multilayer stack has been grown by molecular beam epitaxy and e-beam evaporation. Optical lithography and physical etching ...

  8. Nonmechanical Conductance Switching in a Molecular Tunnel Junction.

    Science.gov (United States)

    Baratz, Adva; Baer, Roi

    2012-02-16

    We present a molecular junction composed of a donor (polyacetylene strands) and an acceptor (malononitrile) connected together via a benzene ring and coupled weakly to source and drain electrodes on each side, for which a gate electrode induces intramolecular charge transfer, switching reversibly the character of conductance. Using a new brand of density functional theory, for which orbital energies are similar to the quasiparticle energies, we show that the junction displays a single, gate-tunable differential conductance channel in a wide energy range. The gate field must align parallel to the displacement vector between donors and acceptor to affect their potential difference; for strong enough fields, spontaneous intramolecular electron transfer occurs. This event radically affects conductance, reversing the charge of carriers, enabling a spin-polarized current channel. We discuss the physical principles controlling the operation of the junction and find interplay of quantum interference, charging, Coulomb blockade, and electron-hole binding energy effects. We expect that this switching behavior is a generic property for similar donor-acceptor systems of sufficient stability. PMID:26286054

  9. InGaN/GaN Tunnel Junctions For Hole Injection in GaN Light Emitting Diodes

    OpenAIRE

    Krishnamoorthy, Sriram; Akyol, Fatih; Rajan, Siddharth

    2014-01-01

    InGaN/GaN tunnel junction contacts were grown on top of an InGaN/GaN blue (450 nm) light emitting diode wafer using plasma assisted molecular beam epitaxy. The tunnel junction contacts enable low spreading resistance n-GaN top contact layer thereby requiring less top metal contact coverage on the surface. A voltage drop of 5.3 V at 100 mA, forward resistance of 2 x 10-2 ohm cm2 and a higher light output power are measured in tunnel junction LED. A low resistance of 5 x 10-4 ohm cm2 was measur...

  10. Temperature dependence of tunneling magnetoresistance in epitaxial magnetic tunnel junctions using a Co2FeAl Heusler alloy electrode

    Science.gov (United States)

    Wang, Wenhong; Sukegawa, Hiroaki; Inomata, Koichiro

    2010-09-01

    Spin-valve-type epitaxial magnetic tunnel junctions (MTJs) consisting of a full-Heusler alloy Co2FeAl (CFA) and a MgO tunnel barrier were fabricated on a single-crystal MgO(001) substrate using sputtering method for all the layers. Experimental temperature-dependent tunnel magnetoresistance in the MTJs was revealed to be fitted well using spin wave excitation model for tunneling spin polarization, P(T)=P0(1-αT3/2) up to room temperature, where P0 is the spin polarization at 0 K and α is a fitting parameter. The determined P and α are shown to be significantly different between bottom and top CFA electrodes facing a MgO barrier. It is demonstrated that the bottom CFA deposited on a Cr buffer has a low α and behaves as a half-metal with P˜1 in terms of the Δ1 symmetry due to the coherent tunneling through a MgO barrier.

  11. Backhopping effect in magnetic tunnel junctions: Comparison between theory and experiment

    International Nuclear Information System (INIS)

    We report on magnetic switching and backhopping effects due to spin-transfer-torque in magnetic tunnel junctions. Experimental data on current-induced switching in junctions with a MgO tunnel barrier reveal random back-and-forth switching between magnetization states, which appears when the current direction favors the parallel magnetic configuration. The effect depends on the barrier thickness tb and is not observed in tunnel junctions with very thin MgO tunnel barriers, tb < 0.95 nm. The switching dependence on bias voltage and barrier thickness is explained in terms of the macrospin model, with the magnetization dynamics described by the modified Landau-Lifshitz-Gilbert equation. Numerical simulations indicate that the competition between in-plane and out-of-plane torque components can result in a non-deterministic switching behavior at high bias voltages, in agreement with experimental observations. When the barrier thickness is reduced, the overall coupling between the magnetic layers across the barrier becomes ferromagnetic, which suppresses the backhopping effect

  12. Voltage-driven versus current-driven spin torque in anisotropic tunneling junctions

    KAUST Repository

    Manchon, Aurelien

    2011-10-01

    Nonequilibrium spin transport in a magnetic tunnel junction comprising a single magnetic layer in the presence of interfacial spin-orbit interaction (SOI) is studied theoretically. The interfacial SOI generates a spin torque of the form T=T∥ M×(z× M)+T⊥ z× M, even in the absence of an external spin polarizer. For thick and large tunnel barriers, the torque reduces to the perpendicular component T⊥, which can be electrically tuned by applying a voltage across the insulator. In the limit of thin and low tunnel barriers, the in-plane torque T∥ emerges, proportional to the tunneling current density. Experimental implications on magnetic devices are discussed. © 2011 IEEE.

  13. Light amplification by stimulated emission from an optically pumped molecular junction in a scanning tunneling microscope

    CERN Document Server

    Braun, K; Wang, X; Adler, H; Peisert, H; Chasse, T; Zhang, D; Meixner, A J

    2013-01-01

    Here, we introduce and experimentally demonstrate optical amplification and stimulated emission from a single optically pumped molecular tunneling junction of a scanning tunneling microscope. The gap between a sharp gold tip and a flat gold substrate covered with a self-assembled monolayer of 5-chloro-2-mercaptobenzothiazole molecules forms an extremely small optical gain medium. When electrons tunnel from the molecules highest occupied molecular orbital to the tip, holes are left behind. These can be repopulated by hot electrons induced by the laser-driven plasmon oscillation on the metal surfaces enclosing the cavity. Solving the laser-rate equations for this system shows that the repopulation process can be efficiently stimulated by the gap modes near field, TERS scattering from neighboring molecules acting as an optical seed. Our results demonstrate how optical enhancement inside the plasmonic cavity can be further increased by a stronger localization via tunneling through molecules. We anticipate that st...

  14. Real-time measurement of quasiparticle tunneling in a single-junction transmon qubit using feedback

    Science.gov (United States)

    Ristè, Diego; Bultink, Niels; Tiggelman, Marijn; Schouten, Raymond; Lehnert, Konrad; Dicarlo, Leonardo

    2013-03-01

    With coherence times of superconducting qubits now exceeding 100 μs , the contribution of quasiparticle (QP) tunneling to qubit relaxation and dephasing becomes potentially relevant. We report the real-time measurement of QP tunneling across the single junction of a 3D transmon qubit. We integrate recent developments in projective qubit readout with 99 % fidelity and feedback-based reset to transform the qubit into a charge-parity detector with 6 μs resolution. We detect a symmetric random telegraph signal matching a QP tunneling time of 0 . 8 ms . By measuring the correlation function of charge parity conditioned on specific initial and final qubit states, we determine that most QP tunneling does not induce qubit transitions, in contradiction with recent theory. We extract a QP-induced qubit relaxation time T1qp ~ 3 ms , decidedly not limiting the measured T1 = 0 . 14 ms . Research supported by NWO, FOM, and EU Project SOLID.

  15. Analysis of mechanical behaviors of big pipe roof for shallow buried large-span tunnel

    Institute of Scientific and Technical Information of China (English)

    Li Jian; Tan Zhongsheng; Yu Yu; Guo Xiaohong

    2013-01-01

    A series of researches on mechanical behaviors of big pipe roof for shallow large-span loess tunnel were carried out based on the Wenxiang tunnel in Zhengzhou-Xi’an Special Passenger Railway. The longitudinal de-formations of the pipe roofs were monitored and the mechanical behaviors of the pipe roofs were analyzed at the test section. A new double-parameter elastic foundation beam model for pipe roof in shallow tunnels was put for-ward in Wenxiang tunnel. The measured values and the calculation results agreed well with each other,revealing the force-deformation law of big pipe roof in loess tunnel:At about 15 m in front of the excavating face,the pipe roof starts to bear the load;at about 15 m behind the excavating face,the force of the pipe roof tends to be stabi-lized;the longitudinal deformation of the whole pipe roofs is groove-shaped distribution,and the largest force of pipe roofs is at the excavating face. Simultaneously,the results also indicate that mechanical behaviors of pipe roof closely relate to the location of the excavation face,the footage of the tunnelling cycle and the mechanics pa-rameters of pipe roof and rock. The conclusions can be reference for the design parameter optimization and the con-struction scheme selection of pipe roofs,and have been verified by the result of numerical analysis software FLAC3D and deformation monitoring.

  16. Revealing the Nature of Molecule-Electrode Contact in Tunneling Junctions Using Raw Data Heat Maps.

    Science.gov (United States)

    Sporrer, Jacob; Chen, Jiahao; Wang, Zhengjia; Thuo, Martin M

    2015-12-17

    Mechanistic understanding of charge transport through molecular tunnel junctions requires reproducible and statistically relevant data sets. This challenge has been overcome by development of large area junctions, especially those based on liquid-metal physi-sorbed top-electrodes, such as eutectic gallium-indium. A challenge with these junctions, however, is an inability to diagnose the quality of contact between the top-electrode and the SAMs. Since tunneling currents are dependent on the distance between the two electrodes, we demonstrate that by analyzing all raw unfitted data derived from a measurement using heat-maps, one can deduce the quality of contact and other minor bias-dependent fluctuations in the charge transport behavior. We demonstrate that the use of 3D plots would be challenging to interpret, but adoption of heat maps clearly captures details on junction quality irrespective of the total size of the data set or molecules used. We propose representation of raw data, rather than reliance on statistics, as proof of quality junctions. PMID:26618717

  17. Direct optical determination of interfacial transport barriers in molecular tunnel junctions.

    Science.gov (United States)

    Fereiro, Jerry A; McCreery, Richard L; Bergren, Adam Johan

    2013-07-01

    Molecular electronics seeks to build circuitry using organic components with at least one dimension in the nanoscale domain. Progress in the field has been inhibited by the difficulty in determining the energy levels of molecules after being perturbed by interactions with the conducting contacts. We measured the photocurrent spectra for large-area aliphatic and aromatic molecular tunnel junctions with partially transparent copper top contacts. Where no molecular absorption takes place, the photocurrent is dominated by internal photoemission, which exhibits energy thresholds corresponding to interfacial transport barriers, enabling their direct measurement in a functioning junction. PMID:23782345

  18. Low frequency noise in small-area tunnel junction dc SQUIDs

    International Nuclear Information System (INIS)

    The noise in a small-area tunnel junction dc SQUID fabricated with a 2.5 μm Pb-alloy technology has been measured in the frequency interval 0.5 Hz -0.9 at 1.6 K, and epsilon α f-0.75 at 4.2 K. The presence of the increased noise at lower frequencies can be understood in terms of a thermal fluctuation model in which equilibrium temperature fluctuations modulate junction critical currents. (orig.)

  19. Thermal spin transfer in Fe-MgO-Fe tunnel junctions

    OpenAIRE

    Jia X; Xia K.; Bauer. G.E.W.

    2011-01-01

    We compute thermal spin transfer torques (TST) in Fe-MgO-Fe tunnel junctions using a first principles wave function-matching method. At room temperature, the TST in a junction with 3 MgO monolayers amounts to 10^-7J/m^2/K, which is estimated to cause magnetization reversal for temperature differences over the barrier of the order of 10 K. The large TST can be explained by multiple scattering between interface states through ultrathin barriers. The angular dependence of the TST can be very ske...

  20. A scanning tunneling microscope break junction method with continuous bias modulation.

    Science.gov (United States)

    Beall, Edward; Yin, Xing; Waldeck, David H; Wierzbinski, Emil

    2015-09-28

    Single molecule conductance measurements on 1,8-octanedithiol were performed using the scanning tunneling microscope break junction method with an externally controlled modulation of the bias voltage. Application of an AC voltage is shown to improve the signal to noise ratio of low current (low conductance) measurements as compared to the DC bias method. The experimental results show that the current response of the molecule(s) trapped in the junction and the solvent media to the bias modulation can be qualitatively different. A model RC circuit which accommodates both the molecule and the solvent is proposed to analyze the data and extract a conductance for the molecule. PMID:26308622

  1. Mutual locking, chaos and devils staircase in two Josephson tunnel junctions with a common resistive shunt

    International Nuclear Information System (INIS)

    The authors have studied the phase-locking in a pair of individually biased, resistively and capacitively shunted Josephson junctions, coupled by a common resistive or capacitive shunt, on an analog computer. Under certain conditions locking is found to occur at all rational frequency ratios. A critical line is found in parameter space along which the steps form a complete devils staircase having a fractal dimension of 0.87. Beyond the critical line bifurcations occur on all steps following the Feigenbaum sequence to chaos. The Feigenbaum constants are recovered to a fair accuracy. Preliminary experiments with two Josephson tunnel junctions shunted on the chip by a gold-indium film are discussed

  2. Temperature dependence of the cosphi conductance in Josephson tunnel junctions determined from plasma resonance experiments

    DEFF Research Database (Denmark)

    Pedersen, Niels Falsig; Sørensen, O. H.; Mygind, Jesper

    1978-01-01

    The microwave response at 9 GHz of Sn-O-Sn tunnel-junction current biased at zero dc voltage has been measured just below the critical temperature Tc of the Sn films. The temperature dependence of the cosφ conductance is determined from the resonant response at the junction plasma frequency fp as...... the temperature is decreased from Tc. We used three different schemes for observation of the plasma oscillations: (a) second-harmonic generation (excitation at ∼ 4.5 GHz, fp∼4.5 GHz); (b) mixing (excitations at ∼ 9 and ∼ 18 GHz, fp∼9 GHz); (c) parametric half-harmonic oscillation (excitation at ∼ 18...

  3. Direct detection of the parametrically generated half-harmonic voltage in a Josephson tunnel junction

    DEFF Research Database (Denmark)

    Mygind, Jesper; Pedersen, Niels Falsig; Sørensen, O. H.

    1976-01-01

    The first direct observation of the parametrically generated half-harmonic voltage in a Josephson tunnel junction is reported. A microwave signal at f=17.25 GHz is applied to the junction dc current biased at zero voltage such that the Josephson plasma resonance fp=f/2. Under these conditions a...... large-amplitude microwave signal is emitted at fp provided the input power exceeds a threshold value. The results are compared to existing theory. Applied Physics Letters is copyrighted by The American Institute of Physics....

  4. Properties of Josephson tunnel junction with trapped Abrikosov vortices

    International Nuclear Information System (INIS)

    This paper investigates properties of the Nb/AlOx/Nb Josephson tunnel juncton (JTJ) with Abrikosov vortices (AV) trapped in electrodes. The trapping of AV was performed by a field-cooling process when the JTJ has been cooled through the critical temperature T either in applied perpendicular magnetic field (Bperpendicular) (mode 1) or by application of the perpendicular magnetic field Bperpendicular when the JTJ was at the temperature below Tc (mode 2). The effect of AV on dependences of Josephson critical supercurrent Ic in the parallel magnetic field B parallel has been studied

  5. Optically induced changes to the tunneling properties of molecular junctions

    Science.gov (United States)

    Zolotavin, Pavlo; Evans, Charlotte; Natelson, Douglas

    We report increased conductance under laser illumination in plasmonically active atomic scale gold junction in a cryogenic environment (substrate temperatures down to 4 K). Additionally, we observe changes in the bias dependence of differential conductance, which we attribute to local heating due to the illumination. We differentiate between plasmon and direct gold absorption by investigating the polarization dependence of the observed temperature change. The effect is quantified by measuring optically induced changes in the resistance of the metal nanowire and by the change in the magnitude of simultaneously measured Johnson-Nyquist noise. A combination of these techniques provides independent measurements of effective lattice and electronic temperatures. Unlike previous experiments at room temperature and 80 K, we report a substantially larger light-driven temperature increase of 80-120K for devices fabricated on SiO2/Si substrates held at substrate temperatures as low as 4 K. The implications of the observed behavior for electronic transport in single molecular junctions with plasmonically active nanowire leads will be discussed. ARO Award W911 NF-13-1-0476.

  6. Probing superconducting phase fluctuations from the current noise spectrum of pseudogaped metal-superconductor tunnel junctions

    OpenAIRE

    Dai, Xi; Xiang, Tao; Ng, Tai-Kai; Su, Zhao-Bin

    2000-01-01

    We study the current noise spectra of a tunnel junction of a metal with strong pairing phase fluctuation and a superconductor. It is shown that there is a characteristic peak in the noise spectrum at the intrinsic Josephson frequency $\\omega_J=2eV$ when $\\omega_J$ is smaller than the pairing gap but larger than the pairing scattering rate. In the presence of an AC voltage, the tunnelling current noise shows a series of characteristic peaks with increasing DC voltage. Experimental observation ...

  7. Non equilibrium superconductivity by using quasi-particle injection in stacked tunnel junctions

    International Nuclear Information System (INIS)

    An experimental study of quasi-particle trapping in proximised Nb/Al layers with different Al thicknesses is presented using symmetrical 3-terminal stacked double tunnel junctions. The experimental tunnelling efficiency of such devices is measured at temperatures down to 1.2 K for different injection current rates. The role of Al layers in the intermediate electrode is discussed in terms of effective non equilibrium processes. The agreement with existing theories on non-equilibrium in such proximity structures makes these results important toward a better understanding of the underlying physics in high resolution particle spectrometers. (orig.)

  8. Probing the Inelastic Interactions in Molecular Junctions by Scanning Tunneling Microscope

    Science.gov (United States)

    Xu, Chen

    With a sub-Kelvin scanning tunneling microscope, the energy resolution of spectroscopy is improved dramatically. Detailed studies of finer features of spectrum become possible. The asymmetry in the line shape of carbon monoxide vibrational spectra is observed to correlate with the couplings of the molecule to the tip and substrates. The spin-vibronic coupling in the molecular junctions is revisited with two metal phthalocyanine molecules, unveiling sharp spin-vibronic peaks. Finally, thanks to the improved spectrum resolution, the bonding structure of the acyclic compounds molecules is surveyed with STM inelastic tunneling probe, expanding the capability of the innovative high resolution imaging technique.

  9. Effect of stray capacitances in a multiple-tunnel junction memory device

    Science.gov (United States)

    Jalil, M. B. A.; Wagner, M.

    1999-12-01

    The retention time of a multiple-tunnel junction (MTJ) trap device is investigated, taking into account the effects of stray capacitances, which have been neglected so far. Using the image-soliton method, the exact solution to Gibb's energy change of tunnelling across the MTJ is obtained. The I- V characteristics and the retention time are then approximated via a much-reduced Master Equation. It is found that the stability of the trap is not adversely affected by stray capacitances provided that temperature is kept low.

  10. A new spin-functional MOSFET based on magnetic tunnel junction technology: pseudo-spin-MOSFET

    OpenAIRE

    Shuto, Yusuke; Nakane, Ryosho; Wang, Wenhong; Sukegawa, Hiroaki; Yamamoto, Shuu'ichirou; Tanaka, Masaaki; Inomata, Koichiro; Sugahara, Satoshi

    2009-01-01

    We fabricated and characterized a new spin-functional MOSFET referred to as a pseudo-spin-MOSFET (PS-MOSFET). The PS-MOSFET is a circuit using an ordinary MOSFET and magnetic tunnel junction (MTJ) for reproducing functions of spin-transistors. Device integration techniques for a bottom gate MOSFET using a silicon-on-insulator (SOI) substrate and for an MTJ with a full-Heusler alloy electrode and MgO tunnel barrier were developed. The fabricated PS-MOSFET exhibited high and low transconductanc...

  11. Zeeman effects on the coherent tunnelling conductance in normal-metal / superconductor / normal-metal double tunnel junctions

    Institute of Scientific and Technical Information of China (English)

    Dong Zheng-Chao

    2005-01-01

    The coherent quantum transport is investigated in normal-metal/superconductor/normal-metal (N/S/N) double tunnel junctions under a Zeeman magnetic field on the S. Taking simultaneously into account the electron-injected current from one N electrode and the hole-injected current from the other N electrode, we derive a general formula for the differential conductance in the N/S/N system. It is shown that the conductance spectrum exhibits oscillatory behaviour with the bias voltage, and the oscillation amplitude is reduced with increasing temperature and Zeeman magnetic field, the Zeeman energy can lead to the Zeeman splitting of conductance peaks. In the tunnel limit, a series of bound states of quasiparticles will form in the S.

  12. Room-Temperature Perpendicular Exchange Coupling and Tunneling Anisotropic Magnetoresistance in an Antiferromagnet-Based Tunnel Junction

    Science.gov (United States)

    Wang, Y. Y.; Song, C.; Cui, B.; Wang, G. Y.; Zeng, F.; Pan, F.

    2012-09-01

    We investigate the exchange coupling between perpendicular anisotropy (PMA) Co/Pt and IrMn in-plane antiferromagnets (AFMs), as well as tunneling anisotropic magnetoresistance (TAMR) in [Pt/Co]/IrMn/AlOx/Pt tunnel junctions, where Co/Pt magnetization drives rotation of AFM moments with the formation of exchange-spring twisting. When coupled with a PMA ferromagnet, the AFM moments partially rotate with out-of-plane magnetic fields, in contrast with being pinned along the easy direction of IrMn for in-plane fields. Because of the superior thermal tolerance of perpendicular exchange coupling and the stability of moments in ˜6nm-thick IrMn, TAMR gets significantly enhanced up to room temperature. Their use would advance the process towards practical AFM spintronics.

  13. Electric field control of spin transfer torque in multiferroic tunnel junctions

    Science.gov (United States)

    Useinov, Artur; Kalitsov, Alan; Velev, Julian; Kioussis, Nicholas

    2014-03-01

    Based on model calculations we predict that the spin transfer torque (STT) in magnetic tunnel junctions with ferroelectric barriers can be strongly influenced by the saturated polarization of the barrier. The STT in such multiferroic tunnel junctions is calculated within the non-equilibrium Keldysh formalism generalized for non-collinear transport and implemented in the framework of a single-band tight-binding (TB) model. We calculate the bias dependence of both the in-plane (T∥) and out-of-plane (T⊥) components of STT as a function of the ferroelectric polarization (P) in the barrier. We find that the components of STT strongly depend on both the magnitude and the direction of the polarization. In particular switching of the polarization direction can dramatically alter the value of the STT and can even lead to a change of sign of T∥ and the voltage-induced part of T⊥. The effect is proportional to the magnitude of the polarization.

  14. Electric Field Control of the Resistance of Multiferroic Tunnel Junctions with Magnetoelectric Antiferromagnetic Barriers

    Science.gov (United States)

    Merodio, P.; Kalitsov, A.; Chshiev, M.; Velev, J.

    2016-06-01

    Based on model calculations, we predict a magnetoelectric tunneling electroresistance effect in multiferroic tunnel junctions consisting of ferromagnetic electrodes and magnetoelectric antiferromagnetic barriers. Switching of the antiferromagnetic order parameter in the barrier in applied electric field by means of the magnetoelectric coupling leads to a substantial change of the resistance of the junction. The effect is explained in terms of the switching of the orientations of local magnetizations at the barrier interfaces affecting the spin-dependent interface transmission probabilities. Magnetoelectric multiferroic materials with finite ferroelectric polarization exhibit an enhanced resistive change due to polarization-induced spin-dependent screening. These results suggest that devices with active barriers based on single-phase magnetoelectric antiferromagnets represent an alternative nonvolatile memory concept.

  15. On-chip molecular electronic plasmon sources based on self-assembled monolayer tunnel junctions

    Science.gov (United States)

    Du, Wei; Wang, Tao; Chu, Hong-Son; Wu, Lin; Liu, Rongrong; Sun, Song; Phua, Wee Kee; Wang, Lejia; Tomczak, Nikodem; Nijhuis, Christian A.

    2016-04-01

    Molecular electronic control over plasmons offers a promising route for on-chip integrated molecular plasmonic devices for information processing and computing. To move beyond the currently available technologies and to miniaturize plasmonic devices, molecular electronic plasmon sources are required. Here, we report on-chip molecular electronic plasmon sources consisting of tunnel junctions based on self-assembled monolayers sandwiched between two metallic electrodes that excite localized plasmons, and surface plasmon polaritons, with tunnelling electrons. The plasmons originate from single, diffraction-limited spots within the junctions, follow power-law distributed photon statistics, and have well-defined polarization orientations. The structure of the self-assembled monolayer and the applied bias influence the observed polarization. We also show molecular electronic control of the plasmon intensity by changing the chemical structure of the molecules and by bias-selective excitation of plasmons using molecular diodes.

  16. Tunneling transport properties in (La,Sr)2CuO4 grain boundary Josephson junctions

    International Nuclear Information System (INIS)

    We investigate tunneling transport properties in thin film grain boundary Josephson junctions (GBJ's) of epitaxially grown (La,Sr)2CuO4 (LSCO) on bicrystal substrates. These optimally doped LSCO films were made by molecular beam epitaxy producing a very smooth film at the grain boundary. Measurements of the critical current Ic at low magnetic fields B (mT range) are used to characterize the quality of the junctions. Deviations from the ideal Ic(B) pattern enable us to indicate the homogeneity of the GBJ. Measurements of the differential conductance in high magnetic fields (T range) are used to investigate quasiparticle tunneling across the grain boundary. Results are compared to theoretical predictions

  17. Vector spin modeling for magnetic tunnel junctions with voltage dependent effects

    Science.gov (United States)

    Manipatruni, Sasikanth; Nikonov, Dmitri E.; Young, Ian A.

    2014-05-01

    Integration and co-design of CMOS and spin transfer devices requires accurate vector spin conduction modeling of magnetic tunnel junction (MTJ) devices. A physically realistic model of the MTJ should comprehend the spin torque dynamics of nanomagnet interacting with an injected vector spin current and the voltage dependent spin torque. Vector spin modeling allows for calculation of 3 component spin currents and potentials along with the charge currents/potentials in non-collinear magnetic systems. Here, we show 4-component vector spin conduction modeling of magnetic tunnel junction devices coupled with spin transfer torque in the nanomagnet. Nanomagnet dynamics, voltage dependent spin transport, and thermal noise are comprehended in a self-consistent fashion. We show comparison of the model with experimental magnetoresistance (MR) of MTJs and voltage degradation of MR with voltage. Proposed model enables MTJ circuit design that comprehends voltage dependent spin torque effects, switching error rates, spin degradation, and back hopping effects.

  18. Important issues facing model-based approaches to tunneling transport in molecular junctions

    CERN Document Server

    Baldea, Ioan

    2015-01-01

    Extensive studies on thin films indicated a generic cubic current-voltage $I-V$ dependence as a salient feature of charge transport by tunneling. A quick glance at $I-V$ data for molecular junctions suggests a qualitatively similar behavior. This would render model-based studies almost irrelevant, since, whatever the model, its parameters can always be adjusted to fit symmetric (asymmetric) $I-V$ curves characterized by two (three) expansion coefficients. Here, we systematically examine popular models based on tunneling barrier or tight-binding pictures and demonstrate that, for a quantitative description at biases of interest ($V$ slightly higher than the transition voltage $V_t$), cubic expansions do not suffice. A detailed collection of analytical formulae as well as their conditions of applicability are presented to facilitate experimentalists colleagues to process and interpret their experimental data by obtained by measuring currents in molecular junctions. We discuss in detail the limits of applicabili...

  19. Crystal engineering of oxide films in the fabrication of high-Tc Josephson tunnel junction

    International Nuclear Information System (INIS)

    In relation to the authors' research for the fabrication of high-Tc Josephson tunnel junction composed of YBCO(S)/oxide insulator(I)/YBCO layers, two crystal engineering issues are presented and discussed on pulsed laser processing of oxide thin films. One is the epitaxial growth of highly crystalline and orientation-controlled YBCO films and the other is the molecular layer epitaxy of perovskite and rock salt oxides films. Quantitative results are presented on the crystal quality, surface atomic layers and morphology, and electronic properties of the films and junctions. Discussion will be made on such problems as the thermodynamics vs. kinetics in the film growth, identification and control of the topmost atomic layers of substrates and growing films, and electronic state of high-Tc films based on the scanning tunneling and photoelectron yield spectra

  20. Vector spin modeling for magnetic tunnel junctions with voltage dependent effects

    Energy Technology Data Exchange (ETDEWEB)

    Manipatruni, Sasikanth, E-mail: sasikanth.manipatruni@intel.com; Nikonov, Dmitri E.; Young, Ian A. [Exploratory Integrated Circuits, Components Research, Intel Corp., Hillsboro, Oregon 97124 (United States)

    2014-05-07

    Integration and co-design of CMOS and spin transfer devices requires accurate vector spin conduction modeling of magnetic tunnel junction (MTJ) devices. A physically realistic model of the MTJ should comprehend the spin torque dynamics of nanomagnet interacting with an injected vector spin current and the voltage dependent spin torque. Vector spin modeling allows for calculation of 3 component spin currents and potentials along with the charge currents/potentials in non-collinear magnetic systems. Here, we show 4-component vector spin conduction modeling of magnetic tunnel junction devices coupled with spin transfer torque in the nanomagnet. Nanomagnet dynamics, voltage dependent spin transport, and thermal noise are comprehended in a self-consistent fashion. We show comparison of the model with experimental magnetoresistance (MR) of MTJs and voltage degradation of MR with voltage. Proposed model enables MTJ circuit design that comprehends voltage dependent spin torque effects, switching error rates, spin degradation, and back hopping effects.

  1. Vector spin modeling for magnetic tunnel junctions with voltage dependent effects

    International Nuclear Information System (INIS)

    Integration and co-design of CMOS and spin transfer devices requires accurate vector spin conduction modeling of magnetic tunnel junction (MTJ) devices. A physically realistic model of the MTJ should comprehend the spin torque dynamics of nanomagnet interacting with an injected vector spin current and the voltage dependent spin torque. Vector spin modeling allows for calculation of 3 component spin currents and potentials along with the charge currents/potentials in non-collinear magnetic systems. Here, we show 4-component vector spin conduction modeling of magnetic tunnel junction devices coupled with spin transfer torque in the nanomagnet. Nanomagnet dynamics, voltage dependent spin transport, and thermal noise are comprehended in a self-consistent fashion. We show comparison of the model with experimental magnetoresistance (MR) of MTJs and voltage degradation of MR with voltage. Proposed model enables MTJ circuit design that comprehends voltage dependent spin torque effects, switching error rates, spin degradation, and back hopping effects

  2. Ballistic current transport studies of ferromagnetic multilayer films and tunnel junctions (invited)

    International Nuclear Information System (INIS)

    Three applications of ballistic electron microscopy are used to study, with nanometer-scale resolution, the magnetic and electronic properties of magnetic multilayer thin films and tunnel junctions. First, the capabilities of ballistic electron magnetic microscopy are demonstrated through an investigation of the switching behavior of continuous Ni80Fe20/Cu/Co trilayer films in the presence of an applied magnetic field. Next, the ballistic, hot-electron transport properties of Co films and multilayers formed by thermal evaporation and magnetron sputtering are compared, a comparison which reveals significant differences in the ballistic transmissivity of thin film multilayers formed by the two techniques. Finally, the electronic properties of thin aluminum oxide tunnel junctions formed by thermal evaporation and sputter deposition are investigated. Here the ballistic electron microscopy studies yield a direct measurement of the barrier height of the aluminum oxide barriers, a result that is invariant over a wide range of oxidation conditions. [copyright] 2001 American Institute of Physics

  3. Enhanced voltage-controlled magnetic anisotropy in magnetic tunnel junctions with an MgO/PZT/MgO tunnel barrier

    Science.gov (United States)

    Chien, Diana; Li, Xiang; Wong, Kin; Zurbuchen, Mark A.; Robbennolt, Shauna; Yu, Guoqiang; Tolbert, Sarah; Kioussis, Nicholas; Khalili Amiri, Pedram; Wang, Kang L.; Chang, Jane P.

    2016-03-01

    Compared with current-controlled magnetization switching in a perpendicular magnetic tunnel junction (MTJ), electric field- or voltage-induced magnetization switching reduces the writing energy of the memory cell, which also results in increased memory density. In this work, an ultra-thin PZT film with high dielectric constant was integrated into the tunneling oxide layer to enhance the voltage-controlled magnetic anisotropy (VCMA) effect. The growth of MTJ stacks with an MgO/PZT/MgO tunnel barrier was performed using a combination of sputtering and atomic layer deposition techniques. The fabricated MTJs with the MgO/PZT/MgO barrier demonstrate a VCMA coefficient, which is ˜40% higher (19.8 ± 1.3 fJ/V m) than the control sample MTJs with an MgO barrier (14.3 ± 2.7 fJ/V m). The MTJs with the MgO/PZT/MgO barrier also possess a sizeable tunneling magnetoresistance (TMR) of more than 50% at room temperature, comparable to the control MTJs with an MgO barrier. The TMR and enhanced VCMA effect demonstrated simultaneously in this work make the MgO/PZT/MgO barrier-based MTJs potential candidates for future voltage-controlled, ultralow-power, and high-density magnetic random access memory devices.

  4. Molecule Induced Strong Exchange Coupling between Ferromagnetic Electrodes of a Magnetic Tunnel Junction

    OpenAIRE

    Tyagi, Pawan

    2011-01-01

    Multilayer edge molecular spintronics device (MEMSD) approach can produce novel logic and memory units for the computers. MEMSD are produced by bridging the molecular channels across the insulator, in the exposed edge region(s) of a magnetic tunnel junction (MTJ). The bridged molecular channels start serving as the dominant exchange coupling medium between the two ferromagnetic electrodes of a MTJ. Present study focus on the effect of molecule enhanced exchange coupling on the magnetic proper...

  5. Time-dependent spin and transport properties of a single molecule magnet in a tunnel junction

    OpenAIRE

    Hammar, H.; J. Fransson

    2016-01-01

    In single molecule magnets, the exchange between a localized spin moment and the electronic background provides a suitable laboratory for studies of dynamical aspects of both the local spin and transport properties. Here we address the time-evolution of a localized spin moment coupled to an electronic level in a molecular quantum dot embedded in a tunnel junction between metallic leads. The interactions between the localized spin moment and the electronic level generates an effective interact...

  6. Magnetic Tunnel Junctions and Superconductor/Ferromagnet Hybrids Investigated by Low-Temperature Scanning Laser Microscopy

    OpenAIRE

    Werner, Robert

    2011-01-01

    Low-temperature scanning laser microscopy (LTSLM) allows the investigation of local properties in thin film structures in a broad temperature range. Depending on the sample under investigation, LTSLM can map various kinds of physical properties such as the current distribution or the magnetic microstructure. In this thesis, the correlation between local and integral magnetotransport properties in thin-film superconductor/ferromagnet (S/F) hybrids and magnetic tunnel junctions are investigated...

  7. Electroluminescence from a polythiophene molecular wire suspended in a plasmonic scanning tunneling microscope junction

    OpenAIRE

    Reecht, Gaël; Scheurer, Fabrice; Speisser, Virginie; Yannick J. Dappe; Mathevet, Fabrice; Schull, Guillaume

    2014-01-01

    The electroluminescence of a polythiophene wire suspended between two metallic electrodes is probed using a scanning tunneling microscope. Under positive sample voltage, the spectral and voltage dependencies of the emitted light are consistent with the fluorescence of the wire junction mediated by localized plasmons. This emission is strongly attenuated for the opposite polarity. Both emission mechanism and polarity dependence are similar to what occurs in organic light emitting diodes (OLED)...

  8. Photovoltaic Effect on Molecule Coupled Ferromagnetic Films of a Magnetic Tunnel Junction

    OpenAIRE

    Tyagi, Pawan

    2011-01-01

    Economical solar energy conversion to electricity can be boosted by the discovery of fundamentally new photovoltaic mechanism, and a suitable system to realize it with commonly available materials like iron (Fe) and nickel (Ni). This paper reports the observation of photovoltaic effect on a molecular spintronics device, composed of magnetic tunnel junction (MTJ) and organometallic molecular clusters (OMCs). A prefabricated MTJ with exposed side edges, after enabling the bridging of OMC channe...

  9. R.F. self-field depression of microwave induced currents steps in Josephson tunnel junction

    International Nuclear Information System (INIS)

    This paper reports that experimentally observed amplitudes of microwave induced steps in Josephson tunnel junctions are significantly reduced respect to the predictions of a simple model developed for a junction that is small respect to the Josephson penetration depth and radiation wavelength. In this approximation the amplitude of the n-th step in the critical current units (the reduced units will be used throughout the paper) is: ln = Jn(γb); γb = nvrf/Vn; Vn = (h/4πe)ωrn, where Jn (γ) is the Bessel function of the order n, ωrf radiation frequency and Vrf that amplitude of the r.f. signal. We will refer to this as the Bessel model. In resonant junctions the spatial variations of the microwave voltage in the barrier cannot be neglected. Pech and Sain-Michel considered the resonant junction irradiated at the frequency at which the half wavelength of the incident radiation matches the junction length (L = λ /2). Recently Costabile at al have solved the perturbed Sine-Gordon equation in the single mode approximation obtaining for the step height at the finite value of the standing wave ratio (SWR) and the intermediate junction length we will referred to this approximation as the SWR model

  10. Investigation of inelastic electron tunneling spectra of metal-molecule-metal junctions fabricated using direct metal transfer method

    Energy Technology Data Exchange (ETDEWEB)

    Jeong, Hyunhak; Hwang, Wang-Taek; Kim, Pilkwang; Kim, Dongku; Jang, Yeonsik; Min, Misook; Park, Yun Daniel; Lee, Takhee, E-mail: tlee@snu.ac.kr [Department of Physics and Astronomy, Institute of Applied Physics, Seoul National University, Seoul 151-747 (Korea, Republic of); Xiang, Dong [Institute of Modern Optics, Nankai University, Tianjin 300071 (China); Song, Hyunwook [Department of Applied Physics, Kyung Hee University, Yongin-si, Gyeonggi-do 446–701 (Korea, Republic of); Jeong, Heejun, E-mail: hjeong@hanyang.ac.kr [Department of Applied Physics, Hanyang University, Ansan 426-791 (Korea, Republic of)

    2015-02-09

    We measured the inelastic electron tunneling spectroscopy (IETS) characteristics of metal-molecule-metal junctions made with alkanethiolate self-assembled monolayers. The molecular junctions were fabricated using a direct metal transfer method, which we previously reported for high-yield metal-molecule-metal junctions. The measured IETS data could be assigned to molecular vibration modes that were determined by the chemical structure of the molecules. We also observed discrepancies and device-to-device variations in the IETS data that possibly originate from defects in the molecular junctions and insulating walls introduced during the fabrication process and from the junction structure.

  11. Investigation of inelastic electron tunneling spectra of metal-molecule-metal junctions fabricated using direct metal transfer method

    International Nuclear Information System (INIS)

    We measured the inelastic electron tunneling spectroscopy (IETS) characteristics of metal-molecule-metal junctions made with alkanethiolate self-assembled monolayers. The molecular junctions were fabricated using a direct metal transfer method, which we previously reported for high-yield metal-molecule-metal junctions. The measured IETS data could be assigned to molecular vibration modes that were determined by the chemical structure of the molecules. We also observed discrepancies and device-to-device variations in the IETS data that possibly originate from defects in the molecular junctions and insulating walls introduced during the fabrication process and from the junction structure

  12. An ARC less InGaP/GaAs DJ solar cell with hetero tunnel junction

    Science.gov (United States)

    Sahoo, G. S.; Nayak, P. P.; Mishra, G. P.

    2016-07-01

    Multi junction solar cell has not achieved an optimum performance yet. To acquire more conversion efficiency research on multi junction solar cell are in progress. In this work we have proposed a dual junction solar cell with conversion efficiency of 43.603%. Mainly the focus is given on the tunnel diode, window layer and back surface field (BSF) layer of the cell, as all of them plays important role on the cell performance. Here we have designed a hetero InGaP/GaAs tunnel diode which makes tunnel diode more transparent to the bottom cell as well as reduces the recombination at the interfaces. The thickness of the window and BSF layer are optimized to achieve higher conversion efficiency. The simulation is carried out using Silvaco ATLAS TCAD under 1000 sun of AM1.5G spectrum. Different performance parameters of the cell like short circuit current density (Jsc), open circuit voltage (Voc), external quantum efficiency (EQE), fill factor (FF), conversion efficiency (η), spectral response and photogeneration rate of the cell are examined and compared with previously reported literatures. For the proposed model a Voc of 2.7043 V, Jsc of 1898.52 mA/cm2, FF of 88.88% and η of 43.6% are obtained.

  13. Terahertz time domain interferometry of a SIS tunnel junction and a quantum point contact

    International Nuclear Information System (INIS)

    The author has applied the Terahertz Time Domain Interferometric (THz-TDI) technique to probe the ultrafast dynamic response of a Superconducting-Insulating-Superconducting (SIS) tunnel junction and a Quantum Point Contact (QPC). The THz-TDI technique involves monitoring changes in the dc current induced by interfering two picosecond electrical pulses on the junction as a function of time delay between them. Measurements of the response of the Nb/AlOx/Nb SIS tunnel junction from 75--200 GHz are in full agreement with the linear theory for photon-assisted tunneling. Likewise, measurements of the induced current in a QPC as a function of source-drain voltage, gate voltage, frequency, and magnetic field also show strong evidence for photon-assisted transport. These experiments together demonstrate the general applicability of the THz-TDI technique to the characterization of the dynamic response of any micron or nanometer scale device that exhibits a non-linear I-V characteristic. 133 refs., 49 figs

  14. Fabrication of tunnel junction-based molecular electronics and spintronics devices

    International Nuclear Information System (INIS)

    Tunnel junction-based molecular devices (TJMDs) are highly promising for realizing futuristic electronics and spintronics devices for advanced logic and memory operations. Under this approach, ∼2.5 nm molecular device elements bridge across the ∼2-nm thick insulator of a tunnel junction along the exposed side edge(s). This paper details the efforts and insights for producing a variety of TJMDs by resolving multiple device fabrication and characterization issues. This study specifically discusses (i) compatibility between tunnel junction test bed and molecular solutions, (ii) optimization of the exposed side edge profile and insulator thickness for enhancing the probability of molecular bridging, (iii) effect of fabrication process-induced mechanical stresses, and (iv) minimizing electrical bias-induced instability after the device fabrication. This research will benefit other researchers interested in producing TJMDs efficiently. TJMD approach offers an open platform to test virtually any combination of magnetic and nonmagnetic electrodes, and promising molecules such as single molecular magnets, porphyrin, DNA, and molecular complexes.

  15. Terahertz time domain interferometry of a SIS tunnel junction and a quantum point contact

    Energy Technology Data Exchange (ETDEWEB)

    Karadi, C [Univ. of California, Berkeley, CA (United States). Dept. of Physics

    1995-09-01

    The author has applied the Terahertz Time Domain Interferometric (THz-TDI) technique to probe the ultrafast dynamic response of a Superconducting-Insulating-Superconducting (SIS) tunnel junction and a Quantum Point Contact (QPC). The THz-TDI technique involves monitoring changes in the dc current induced by interfering two picosecond electrical pulses on the junction as a function of time delay between them. Measurements of the response of the Nb/AlO{sub x}/Nb SIS tunnel junction from 75--200 GHz are in full agreement with the linear theory for photon-assisted tunneling. Likewise, measurements of the induced current in a QPC as a function of source-drain voltage, gate voltage, frequency, and magnetic field also show strong evidence for photon-assisted transport. These experiments together demonstrate the general applicability of the THz-TDI technique to the characterization of the dynamic response of any micron or nanometer scale device that exhibits a non-linear I-V characteristic. 133 refs., 49 figs.

  16. Theory for collective macroscopic tunneling in high- Tc intrinsic Josephson junctions

    Science.gov (United States)

    Machida, M.; Koyama, T.

    2007-10-01

    On the basis of the theory for the capacitive coupling in intrinsic Josephson junctions (IJJ's), we theoretically study the macroscopic quantum tunneling in the switching dynamics into the voltage states in IJJ. The effective action obtained by using the path integral formalism reveals that the capacitive coupling splits each of the lowest and higher quantum levels, which are given inside Josephson potential barrier of the single junction derived by dropping off the coupling, into levels composed of the number of junction (N). This level splitting can cause multiple low-frequency Rabi-oscillations and enhance the switching probability compared to the conventional Caldeira-Leggett theory. Furthermore, a possibility as a naturally built-in multi-qubit is discussed.

  17. Development of nano and micro SQUIDs based on Al tunnel junctions

    International Nuclear Information System (INIS)

    Superconducting quantum interference devices (SQUIDs) with nano (micro)-meter dimensions are called nano (micro)-SQUIDs. The high sensitivity for flux and position of nano (micro)-SQUIDs can be applied to detect local magnetic fields induced by vortices and the magnetization of mesoscopic superconductors. Nano-SQUIDs based on carbon-nanotube junctions and niobium weak junctions are well known. However, such nano-SQUIDs are not suitable for large-scale integrated circuits and mass production. Therefore, we employ a combination of lithography using the Niemeyer-Dolan technique and the inductively coupled plasma reactive-ion etching technique to fabricate nano-SQUIDs. Here, we report the fabrication of nano (micro)-SQUIDs based on superconducting aluminum tunnel junctions and their application for vortex formation into mesoscopic chiral superconducting Sr2RuO4[1-3

  18. Nonequilibrium theory of a hot-electron bolometer with normal metal-insulator-superconductor tunnel junction

    International Nuclear Information System (INIS)

    The operation of the hot-electron bolometer with normal metal-insulator-superconductor (NIS) tunnel junction as a temperature sensor is analyzed theoretically. The responsivity and the noise equivalent power (NEP) of the bolometer are obtained numerically for typical experimental parameters. Relatively simple approximate analytical expressions for these values are derived. The time constant of the device is also found. We demonstrate that the effect of the electron cooling by the NIS junction, which serves as a thermometer, can improve the sensitivity. This effect is also useful in the presence of the finite background power load. We discuss the effect of the correlation of the shot noise and the heat flow noise in the NIS junction. [copyright] 2001 American Institute of Physics

  19. Gap state charge induced spin-dependent negative differential resistance in tunnel junctions

    Science.gov (United States)

    Jiang, Jun; Zhang, X.-G.; Han, X. F.

    2016-04-01

    We propose and demonstrate through first-principles calculation a new spin-dependent negative differential resistance (NDR) mechanism in magnetic tunnel junctions (MTJ) with cubic cation disordered crystals (CCDC) AlO x or Mg1‑x Al x O as barrier materials. The CCDC is a class of insulators whose band gap can be changed by cation doping. The gap becomes arched in an ultrathin layer due to the space charge formed from metal-induced gap states. With an appropriate combination of an arched gap and a bias voltage, NDR can be produced in either spin channel. This mechanism is applicable to 2D and 3D ultrathin junctions with a sufficiently small band gap that forms a large space charge. It provides a new way of controlling the spin-dependent transport in spintronic devices by an electric field. A generalized Simmons formula for tunneling current through junction with an arched gap is derived to show the general conditions under which ultrathin junctions may exhibit NDR.

  20. Liquid phase epitaxy of abrupt junctions in InAs and studies of injection radiative tunneling processes

    International Nuclear Information System (INIS)

    The p-n junction in a InAs crystal, by liquid phase epitaxy is obtained. The processes of injection and tunneling radiative recombination by emitted radiation from active region of p-n junction for low injection current are studied. (M.C.K.)

  1. Conductance and shot noise in ferromagnet-superconductor epitaxial tunnel junctions

    Science.gov (United States)

    Aliev, Farkhad; Martinez, Isidoro; Cascales, Juan Pedro; Tiusan, Coriolan; Hehn, Michel

    Recently ferromagnet/superconductor hybrids have attracted attention due to the possibility of inducing p-wave superconductivity and of creating novel superconducting-spintronic devices. Most of these devices have a lateral configuration and are non-epitaxial, so they could not provide coherent electron tunneling over the interfaces. Here we investigate the conductance and shot noise in fully epitaxial Fe/MgO/V/MgO/Fe, Fe/MgO/Fe/MgO/V and Fe/MgO/V tunnel junctions with 40 nm thick Vanadium and 2nm thick MgO as a function of the applied bias, temperature (down to 0.3K) and magnetic state. All junctions show presence of finite subgap conductance indicating coherent two-electron transport over the barrier. Moreover, we observe conductance anomalies above the gap suppressed at temperature exceeding critical temperature, which may imply quasiparticle interference effects. High crystalline quality of the MgO barriers is confirmed by the fact that the above gap shot noise is Poissonian (direct tunneling with single barrier) or sub-Poissonian (sequential tunneling over two barriers) and is magnetic state dependent in the last case. The subgap Fano factor shows strong increase supporting multiple Andreev reflections as a possible source of excess subgap conductance.

  2. Band structure of topological insulators from noise measurements in tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Cascales, Juan Pedro, E-mail: juanpedro.cascales@uam.es; Martínez, Isidoro; Aliev, Farkhad G., E-mail: farkhad.aliev@uam.es [Dpto. Fisica Materia Condensada C3, Instituto Nicolas Cabrera (INC), Condensed Matter Physics Institute (IFIMAC), Universidad Autonoma de Madrid, Madrid 28049 (Spain); Katmis, Ferhat; Moodera, Jagadeesh S. [Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); Francis Bitter Magnet Laboratory, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); Chang, Cui-Zu [Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); Guerrero, Rubén [Instituto Madrileño de Estudios Avanzados en Nanociencia (IMDEA-Nanociencia), Cantoblanco, 28049 Madrid (Spain)

    2015-12-21

    The unique properties of spin-polarized surface or edge states in topological insulators (TIs) make these quantum coherent systems interesting from the point of view of both fundamental physics and their implementation in low power spintronic devices. Here we present such a study in TIs, through tunneling and noise spectroscopy utilizing TI/Al{sub 2}O{sub 3}/Co tunnel junctions with bottom TI electrodes of either Bi{sub 2}Te{sub 3} or Bi{sub 2}Se{sub 3}. We demonstrate that features related to the band structure of the TI materials show up in the tunneling conductance and even more clearly through low frequency noise measurements. The bias dependence of 1/f noise reveals peaks at specific energies corresponding to band structure features of the TI. TI tunnel junctions could thus simplify the study of the properties of such quantum coherent systems that can further lead to the manipulation of their spin-polarized properties for technological purposes.

  3. Antenna-coupled photon emission from hexagonal boron nitride tunnel junctions

    Science.gov (United States)

    Parzefall, M.; Bharadwaj, P.; Jain, A.; Taniguchi, T.; Watanabe, K.; Novotny, L.

    2015-12-01

    The ultrafast conversion of electrical signals to optical signals at the nanoscale is of fundamental interest for data processing, telecommunication and optical interconnects. However, the modulation bandwidths of semiconductor light-emitting diodes are limited by the spontaneous recombination rate of electron-hole pairs, and the footprint of electrically driven ultrafast lasers is too large for practical on-chip integration. A metal-insulator-metal tunnel junction approaches the ultimate size limit of electronic devices and its operating speed is fundamentally limited only by the tunnelling time. Here, we study the conversion of electrons (localized in vertical gold-hexagonal boron nitride-gold tunnel junctions) to free-space photons, mediated by resonant slot antennas. Optical antennas efficiently bridge the size mismatch between nanoscale volumes and far-field radiation and strongly enhance the electron-photon conversion efficiency. We achieve polarized, directional and resonantly enhanced light emission from inelastic electron tunnelling and establish a novel platform for studying the interaction of electrons with strongly localized electromagnetic fields.

  4. Structural and electrical characterization of magnetic tunnel junctions with ultrathin MgO-barriers

    International Nuclear Information System (INIS)

    Ultrathin barriers are necessary to provide sufficient high tunnel current densities, which are required for spin current induced switching experiments. For future MRAMs with high read and write performance a high room-temperature tunnelling magnetoresistance (TMR) is also necessary. The thinner the barrier, the more important become the interfaces between the ferromagnetic electrodes and the insulating barrier. We have prepared magnetic tunnel junctions (MTJs) with trilayers of CoFeB/MgO/CoFeB by means of e-beam evaporation of stoichiometric MgO and magnetron sputtering CoFeB. After characterizing the transport properties (I/V characteristics, TMR) the structural analysis was made by cross-sectional TEM. Aim is to correlate structural defects and quality of the interfaces with the transport properties. In future experiments we are planning to integrate the MTJs into a strip line with a photoconductive switch in order to study the dynamics of spin current induced switching effect

  5. Large magnetocapacitance effect in magnetic tunnel junctions based on Debye-Fröhlich model

    International Nuclear Information System (INIS)

    The frequency dependence of tunneling magnetocapacitance (TMC) in magnetic tunnel junctions (MTJs) is investigated theoretically and experimentally. According to the calculation based on Debye-Fröhlich model combined with Julliere formula, the TMC ratio strongly depends on the frequency and it has the maximum peak at a specific frequency. The calculated frequency dependence of TMC is in good agreement with the experimental results obtained in MgO-based MTJs with a tunneling magnetoresistance (TMR) ratio of 108%, which exhibit a large TMC ratio of 155% at room temperature. This calculation also predicts that the TMC ratio can be as large as about 1000% for a spin polarization of 87%, while the TMR ratio is 623% for the same spin polarization. These theoretical and experimental findings provide a deeper understanding on AC spin-dependent transport in the MTJs and will open up wider opportunities for device applications, such as highly sensitive magnetic sensors and impedance-tunable devices

  6. Half-metallic {Co2MnSi/Co2FeSi} multilayered Heusler electrodes in magnetic tunnel junctions

    International Nuclear Information System (INIS)

    It is demonstrated that the atomic ordering of Co2FeSi can significantly be improved in terms of magnetization and tunnel magnetoresistance using multilayered {Co2MnSi5nm/Co2FeSi5nm}10 full-Heusler magnetic electrodes in magnetic tunnel junctions

  7. Temperature and bias-voltage dependence of atomic-layer-deposited HfO{sub 2}-based magnetic tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Fabretti, Savio, E-mail: fabretti@physik.uni-bielefeld.de [Thin Films and Physics of Nanostructures, Bielefeld University, Universitaetsstrasse 25, 33615 Bielefeld (Germany); Zierold, Robert; Nielsch, Kornelius [Institute of Applied Physics, Universität Hamburg, Jungiusstrasse 11, 20355 Hamburg (Germany); Voigt, Carmen; Ronning, Carsten [Institute for Solid State Physics, Friedrich-Schiller-University Jena, Max-Wien-Platz 1, 07743 Jena (Germany); Peretzki, Patrick; Seibt, Michael [4. Physikalisches Institut, Georg-August University Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen (Germany); Thomas, Andy [Thin Films and Physics of Nanostructures, Universitaetsstrasse 25, 33615 Bielefeld, Germany, and Institut für Physik, Johannes Gutenberg Universität Mainz, Staudingerweg 9, 55128 Mainz (Germany)

    2014-09-29

    Magnetic tunnel junctions with HfO{sub 2} tunnel barriers were prepared through a combination of magnetron sputtering and atomic layer deposition. We investigated the tunneling transport behavior, including the tunnel magnetoresistance ratio and the current-voltage characteristics between room temperature and 2 K. Here, we achieved a tunneling magneto resistance ratio of 10.3% at room temperature and 19.3% at 2 K. Furthermore, we studied the bias-voltage and temperature dependencies and compared the results with those of commonly used alumina- and magnesia-based magnetic tunnel junctions. We observed a polycrystalline/amorphous electrode-barrier system via high-resolution transmission electron microscopy.

  8. Control of City Shallow Buried Tunnel Blasting Hazard to Surface Buildings

    OpenAIRE

    Yang Deqiang; Chi Enan; Ji Yucheng; Liu Jia; Wang Xuguang; Zhao Mingsheng; Tao Tiejun; Wang Yang

    2015-01-01

    Combining with the blasting test of an under-construction tunnel, this paper optimizes the overall blasting construction scheme. The optimized blasting scheme is used in the site construction test and the peak particle vibration velocity is strictly controlled under working conditions through blasting vibration monitoring to ensure the safety of surrounding buildings and structures in the construction process. The corresponding control measures are proposed to reduce the blasting vibration wh...

  9. Control of City Shallow Buried Tunnel Blasting Hazard to Surface Buildings

    Directory of Open Access Journals (Sweden)

    Yang Deqiang

    2015-01-01

    Full Text Available Combining with the blasting test of an under-construction tunnel, this paper optimizes the overall blasting construction scheme. The optimized blasting scheme is used in the site construction test and the peak particle vibration velocity is strictly controlled under working conditions through blasting vibration monitoring to ensure the safety of surrounding buildings and structures in the construction process. The corresponding control measures are proposed to reduce the blasting vibration which brings certain guiding significance to the following construction project.

  10. Uncovering a law of corresponding states for electron tunneling in molecular junctions

    Science.gov (United States)

    Bâldea, Ioan; Xie, Zuoti; Frisbie, C. Daniel

    2015-06-01

    Laws of corresponding states known so far demonstrate that certain macroscopic systems can be described in a universal manner in terms of reduced quantities, which eliminate specific substance properties. To quantitatively describe real systems, all these laws of corresponding states contain numerical factors adjusted empirically. Here, we report a law of corresponding states deduced analytically for charge transport via tunneling in molecular junctions, which we validate against current-voltage measurements for conducting probe atomic force microscope junctions based on benchmark molecular series (oligophenylenedithiols and alkanedithiols) and electrodes (silver, gold, and platinum), as well as against transport data for scanning tunneling microscope junctions. Two salient features distinguish the present law of corresponding states from all those known previously. First, it is expressed by a universal curve free of empirical parameters. Second, it demonstrates that a universal behavior is not necessarily affected by strong stochastic fluctuations often observed in molecular electronics. An important and encouraging message of this finding is that transport behavior across different molecular platforms can be similar and extraordinarily reproducible.Laws of corresponding states known so far demonstrate that certain macroscopic systems can be described in a universal manner in terms of reduced quantities, which eliminate specific substance properties. To quantitatively describe real systems, all these laws of corresponding states contain numerical factors adjusted empirically. Here, we report a law of corresponding states deduced analytically for charge transport via tunneling in molecular junctions, which we validate against current-voltage measurements for conducting probe atomic force microscope junctions based on benchmark molecular series (oligophenylenedithiols and alkanedithiols) and electrodes (silver, gold, and platinum), as well as against transport data

  11. Tunneling Conductance and Magnetoresistance in Ferromagnet/Ferromagnet/d-Wave Superconductor Double Tunnel Junctions

    Institute of Scientific and Technical Information of China (English)

    DONG Zheng-Chao

    2004-01-01

    The tunneling conductance and tunneling magnetoresistance (TMR) are investigated in ferromagnet/insulator/ferromagnet/insulator/d-wave superconductor (FM/I/FM/I/d-wave SC) structures by applying an extended Blonder-Tinkham-Klapwijk (BTK) approach. We study the effects of the exchange splitting in the FM,the magnetic impurity scattering in the thin insulator interface of FM/I/FM, and noncollinear magnetizations in adjacent magnetic layers on the TMR. It is shown (1) that the tunneling conductance and TMR exhibit amplitude-varying oscillating behavior with exchange splitting, (2) that with the presence of spin-flip scattering in insulator interface of FM/I/FM, the TMR can be dramatically enhanced, and (3) that the TMR depends strongly on the angle between the magnetization of two FMs.

  12. Polarity-tunable spin transport in all-oxide multiferroic tunnel junctions

    Science.gov (United States)

    Soni, Rohit; Petraru, Adrian; Nair, Harikrishnan S.; Vavra, Ondrej; Ziegler, Martin; Kim, Seong Keun; Jeong, Doo Seok; Kohlstedt, Hermann

    2016-05-01

    A multiferroic tunnel junction (MFTJ) promisingly offers multinary memory states in response to electric- and magnetic-fields, referring to tunneling electroresistance (TER) and tunneling magnetoresistance (TMR), respectively. In spite of recent progress, a substantial number of questions concerning the understanding of these two intertwined phenomena still remain open, e.g. the role of microstructural/chemical asymmetry at the interfaces of the junction and the effect of an electrode material on the MFTJ properties. In this regard, we look into the multiferroic effect of all-complex-oxide MFTJ (La0.7Sr0.3MnO3/Pb(Zr0.3Ti0.7)O3/La0.7Sr0.3MnO3). The results reveal apparent TER-TMR interplay--captured by the reversible electric-field control of the TMR effect. Finally, microscopy analysis on the MFTJ revealed that the observed TER-TMR interplay is perhaps mediated by microstructural and chemical asymmetry in our nominally symmetric MFTJ.A multiferroic tunnel junction (MFTJ) promisingly offers multinary memory states in response to electric- and magnetic-fields, referring to tunneling electroresistance (TER) and tunneling magnetoresistance (TMR), respectively. In spite of recent progress, a substantial number of questions concerning the understanding of these two intertwined phenomena still remain open, e.g. the role of microstructural/chemical asymmetry at the interfaces of the junction and the effect of an electrode material on the MFTJ properties. In this regard, we look into the multiferroic effect of all-complex-oxide MFTJ (La0.7Sr0.3MnO3/Pb(Zr0.3Ti0.7)O3/La0.7Sr0.3MnO3). The results reveal apparent TER-TMR interplay--captured by the reversible electric-field control of the TMR effect. Finally, microscopy analysis on the MFTJ revealed that the observed TER-TMR interplay is perhaps mediated by microstructural and chemical asymmetry in our nominally symmetric MFTJ. Electronic supplementary information (ESI) available. See DOI: 10.1039/c6nr01277a

  13. Integrating Atomic Layer Deposition and Ultra-High Vacuum Physical Vapor Deposition for In Situ Fabrication of Tunnel Junctions

    OpenAIRE

    Elliot, Alan J.; Malek, Gary A.; Lu, Rongtao; Han, Siyuan; Yiu, Haifeng; Zhao, Shiping; Wu, Judy Z.

    2014-01-01

    Atomic Layer Deposition (ALD) is a promising technique for growing ultrathin, pristine dielectrics on metal substrates, which is essential to many electronic devices. Tunnel junctions are an excellent example which require a leak-free, ultrathin dielectric tunnel barrier of typical thickness around 1 nm between two metal electrodes. A challenge in the development of ultrathin dielectric tunnel barrier using ALD is controlling the nucleation of dielectrics on metals with minimal formation of n...

  14. Simulation of I-V curves of small Josephson tunnel junctions with finite capacitance

    International Nuclear Information System (INIS)

    Results of digital and analog simulations of the I-V characteristics of small Josephson tunnel junctions are presented for a variety of cases, and are compared with the recent experimental results of Howard et al. [Appl. Phys. Lett. 35, 879 (1979)] on small-area, high-current-density junctions. The lumped-circuit-element model of Stewart and McCumber with an adjustable nonlinear quasiparticle conductance and various capacitance values is employed. The value of junction capacitance inferred from the digital simulation for a 10-9-cm2 junction is 9 x 10-15 F. This represents a normalized capacitance β/sub c/ = 0.3 for the junction considered, which had a critical current density roughly-equal105 A/cm2. The inferred capacitance is in agreement with the value extrapolated from previous experimental results. Both digital and analog simulations result in I-V curves which show a previously unreported crossing of the quasiparticle and total current curves. This crossing is due to an averaging in time of the voltage across the nonlinear quasiparticle-conductance channel. The crossing is not seen in the experimental results of Howard et al. Differences between the experimental and simulated I-V curves are discussed

  15. Valley and spin resonant tunneling current in ferromagnetic/nonmagnetic/ferromagnetic silicene junction

    Directory of Open Access Journals (Sweden)

    Yaser Hajati

    2016-02-01

    Full Text Available We study the transport properties in a ferromagnetic/nonmagnetic/ferromagnetic (FNF silicene junction in which an electrostatic gate potential, U, is attached to the nonmagnetic region. We show that the electrostatic gate potential U is a useful probe to control the band structure, quasi-bound states in the nonmagnetic barrier as well as the transport properties of the FNF silicene junction. In particular, by introducing the electrostatic gate potential, both the spin and valley conductances of the junction show an oscillatory behavior. The amplitude and frequency of such oscillations can be controlled by U. As an important result, we found that by increasing U, the second characteristic of the Klein tunneling is satisfied as a result of the quasiparticles chirality which can penetrate through a potential barrier. Moreover, it is found that for special values of U, the junction shows a gap in the spin and valley-resolve conductance and the amplitude of this gap is only controlled by the on-site potential difference, Δz. Our findings of high controllability of the spin and valley transport in such a FNF silicene junction may improve the performance of nano-electronics and spintronics devices.

  16. Lateral V/VOx/V Tunnel Junctions Formed by Anodic Oxidation

    Science.gov (United States)

    Kirkwood, David; West, Kevin; Lu, Jiwei; Wolf, Stuart

    2008-03-01

    Anodization has been found to be a simple and cost effective technique to produce oxide films of many transition metals. In this work, we have used anodic oxidation as a means of fabricating lateral V/VOx/V junctions. Vanadium wires grown by ion beam deposition were patterned by lithography and an active working window was defined on the wire. VOx was then grown under galvanostatic control in a two electrode electrochemical micro-cell. A droplet of oxygen rich saturated Boric acid was used as the electrolyte to electrically connect the Vandium working electrode to a Platinum wire counter electrode. A constant current of approximately 100 μA/cm^2 was maintained through the cell for various amounts of time. Electrical measurements of the resulting V/VOx/V junctions indicate a metal to insulator transition (MIT) near 340 ^oK that is similar to the structural phase transition and accompanied MIT of VO2 which occurs at this temperature. A 4-fold change in resistance is observed in the junctions. Below this transition temperature a typical junction behavior is observed with a dramatic change in resistance state from high to low with increasing applied current. This non-linear IV characteristic on the junction with a size of 5 μm by 15 μm suggests that the anodized VOx film behaves like a tunneling barrier.

  17. Equivalent circuits of a self-assembled monolayer-based tunnel junction determined by impedance spectroscopy.

    Science.gov (United States)

    Sangeeth, C S Suchand; Wan, Albert; Nijhuis, Christian A

    2014-08-01

    The electrical characteristics of molecular tunnel junctions are normally determined by DC methods. Using these methods it is difficult to discriminate the contribution of each component of the junctions, e.g., the molecule-electrode contacts, protective layer (if present), or the SAM, to the electrical characteristics of the junctions. Here we show that frequency-dependent AC measurements, impedance spectroscopy, make it possible to separate the contribution of each component from each other. We studied junctions that consist of self-assembled monolayers (SAMs) of n-alkanethiolates (S(CH2)(n-1)CH3 ≡ SC(n) with n = 8, 10, 12, or 14) of the form Ag(TS)-SC(n)//GaO(x)/EGaIn (a protective thin (~0.7 nm) layer of GaO(x) forms spontaneously on the surface of EGaIn). The impedance data were fitted to an equivalent circuit consisting of a series resistor (R(S), which includes the SAM-electrode contact resistance), the capacitance of the SAM (C(SAM)), and the resistance of the SAM (R(SAM)). A plot of R(SAM) vs n(C) yielded a tunneling decay constant β of 1.03 ± 0.04 n(C)(-1), which is similar to values determined by DC methods. The value of C(SAM) is similar to previously reported values, and R(S) (2.9-3.6 × 10(-2) Ω·cm(2)) is dominated by the SAM-top contact resistance (and not by the conductive layer of GaO(x)) and independent of n(C). Using the values of R(SAM), we estimated the resistance per molecule r as a function of n(C), which are similar to values obtained by single molecule experiments. Thus, impedance measurements give detailed information regarding the electrical characteristics of the individual components of SAM-based junctions. PMID:25036915

  18. Tunneling characteristics of Au-alkanedithiol-Au junctions formed via nanotransfer printing (nTP).

    Science.gov (United States)

    Niskala, Jeremy R; Rice, William C; Bruce, Robert C; Merkel, Timothy J; Tsui, Frank; You, Wei

    2012-07-25

    Construction of permanent metal-molecule-metal (MMM) junctions, though technically challenging, is desirable for both fundamental investigations and applications of molecule-based electronics. In this study, we employed the nanotransfer printing (nTP) technique using perfluoropolyether (PFPE) stamps to print Au thin films onto self-assembled monolayers (SAMs) of alkanedithiol formed on Au thin films. We show that the resulting MMM junctions form permanent and symmetrical tunnel junctions, without the need for an additional protection layer between the top metal electrode and the molecular layer. This type of junction makes it possible for direct investigations into the electrical properties of the molecules and the metal-molecule interfaces. Dependence of transport properties on the length of the alkane molecules and the area of the printed Au electrodes has been examined systematically. From the analysis of the current-voltage (I-V) curves using the Simmons model, the height of tunneling barrier associated with the molecule (alkane) has been determined to be 3.5 ± 0.2 eV, while the analysis yielded an upper bound of 2.4 eV for the counterpart at the interface (thiol). The former is consistent with the theoretical value of ~3.5-5.0 eV. The measured I-V curves show scaling with respect to the printed Au electrode area with lateral dimensions ranging from 80 nm to 7 μm. These results demonstrate that PFPE-assisted nTP is a promising technique for producing potentially scalable and permanent MMM junctions. They also demonstrate that MMM structures (produced by the unique PFPE-assisted nTP) constitute a reliable test bed for exploring molecule-based electronics. PMID:22720785

  19. Metamorphic Ga0.76In0.24As/GaAs0.75Sb0.25 tunnel junctions grown on GaAs substrates

    Science.gov (United States)

    García, I.; Geisz, J. F.; France, R. M.; Kang, J.; Wei, S.-H.; Ochoa, M.; Friedman, D. J.

    2014-08-01

    Lattice-matched and pseudomorphic tunnel junctions have been developed in the past for application in a variety of semiconductor devices, including heterojunction bipolar transistors, vertical cavity surface-emitting lasers, and multijunction solar cells. However, metamorphic tunnel junctions have received little attention. In 4-junction Ga0.51In0.49P/GaAs/Ga0.76In0.24As/Ga0.47In0.53As inverted-metamorphic solar cells (4J-IMM), a metamorphic tunnel junction is required to series connect the 3rd and 4th junctions. We present a tunnel junction based on a metamorphic Ga0.76In0.24As/GaAs0.75Sb0.25 structure for this purpose. This tunnel junction is grown on a metamorphic Ga0.76In0.24As template on a GaAs substrate. The band offsets in the resulting type-II heterojunction are calculated using the first-principles density functional method to estimate the tunneling barrier height and assess the performance of this tunnel junction against other material systems and compositions. The effect of the metamorphic growth on the performance of the tunnel junctions is analyzed using a set of metamorphic templates with varied surface roughness and threading dislocation density. Although the metamorphic template does influence the tunnel junction performance, all tunnel junctions measured have a peak current density over 200 A/cm2. The tunnel junction on the best template has a peak current density over 1500 A/cm2 and a voltage drop at 15 A/cm2 (corresponding to operation at 1000 suns) lower than 10 mV, which results in a nearly lossless series connection of the 4th junction in the 4J-IMM structure.

  20. n/p/n Tunnel Junction InGaAs Monolithic Interconnected Module (MIM)

    Science.gov (United States)

    Wilt, David M.; Murray, Christopher S.; Fatemi, Navid S.; Weizer, Victor

    2005-01-01

    The Monolithic Interconnected Module (MIM), originally introduced at the First NREL thermophotovoltaic (TPV) conference, consists of low-bandgap indium gallium arsenide (InGaAs) photovoltaic devices, series interconnected on a common semi-insulating indium phosphide (inP) substrate. An infrared reflector is deposited on the back surface of the substrate to reflect photons, which were not absorbed in the first pass through the structure. The single largest optical loss in the current device occurs int he heavily doped p-type emitter. A new MIM design (pat.pend.) has been developed which flips the polarity of the conventional MIM cell (i.e., n/p rather than p/n), eliminating the need for the high conductivity p-type emitter. The p-type base of the cell is connected to the n-type lateral conduction layer through a thin InGaAs tunnel junction. 0.58 eV and 0.74 eV InGaAs devices have demonstrated reflectances above 90% for wavelengths beyond the bandgap (greater than 95% for unprocessed structures). Electrical measurements indicate minimal voltage drops across the tunnel junction (less than mV/junction under 1200K-blackbody illumnination) and fill factors that are above 70% at current densities (J(sub sc)) above 8 Angstroms per square centimeters for the 0.74eV devices.

  1. Uncovering a law of corresponding states for electron tunneling in molecular junctions.

    Science.gov (United States)

    Bâldea, Ioan; Xie, Zuoti; Frisbie, C Daniel

    2015-06-21

    Laws of corresponding states known so far demonstrate that certain macroscopic systems can be described in a universal manner in terms of reduced quantities, which eliminate specific substance properties. To quantitatively describe real systems, all these laws of corresponding states contain numerical factors adjusted empirically. Here, we report a law of corresponding states deduced analytically for charge transport via tunneling in molecular junctions, which we validate against current-voltage measurements for conducting probe atomic force microscope junctions based on benchmark molecular series (oligophenylenedithiols and alkanedithiols) and electrodes (silver, gold, and platinum), as well as against transport data for scanning tunneling microscope junctions. Two salient features distinguish the present law of corresponding states from all those known previously. First, it is expressed by a universal curve free of empirical parameters. Second, it demonstrates that a universal behavior is not necessarily affected by strong stochastic fluctuations often observed in molecular electronics. An important and encouraging message of this finding is that transport behavior across different molecular platforms can be similar and extraordinarily reproducible. PMID:26008991

  2. Superconducting tunneling junctions as X-ray detectors and their possible applications in astrophysics

    Science.gov (United States)

    Twerenbold, Damian

    1988-12-01

    Superconducting tunneling junctions (STJ) have been demonstrated to be sensitive detectors for X-rays at energies of 6 keV. The measured energy resolution for Sn/Sn-oxide/Sn junctions (75 × 75 μm2) at an operating temperature below 0.5 K is 65 eV (FWHM) at an energy of 5.89 keV. An extrapolation to vanishing electronic noise yielded a resolution of 40 eV. This improved energy resolution compared to conventional semiconductors is due to the thousand times smaller energy gap of a superconductor. The mechanisms of the detector is the production of excess quasiparticles (single particle electronic excitations) by the breaking of Cooper pairs (condensed electronic ground state). These excess quasiparticles tunnel across the insulating barrier owing to the quantum mechanical tunneling effect. The additional current is integrated by means of a charge sensitive preamplifier. The basic physics of the detector is presented and possible applications in astrophysics are discussed. Present address: Institut de Physique, Rue A.-L. Breguet 1, CH-2000 Neuchâtel, Switzerland.

  3. Spin dependent transport in diluted magnetic semiconductor/superconductor tunnel junctions

    International Nuclear Information System (INIS)

    Highlights: • Transport properties of DMS/SC/DMS double tunneling junctions have been investigated in the BTK model. • TMR dependence on barrier strength, spin polarization of DMS layers and the SC barrier parameters has been studied. • An oscillatory behavior with the quasi-particle energy has been observed in the conductance spectrum. - Abstract: A modification of Blonder–Tinkham–Klapwijk (BTK) model is proposed to describe transport properties of diluted magnetic semiconductor (DMS)/superconductor(SC)/DMS double tunneling junctions. Coherent spin-polarized transport is studied by taking into account the Andreev reflection on spatial variation of SC barrier parameters in the heterostructure. It is shown that the conductance spectrum exhibits an oscillatory behavior with quasi-particle energy, and the oscillation amplitude is reduced with increasing temperature. We also examine the dependence of tunneling magnetoresistance (TMR) on the barrier strength (κ) and spin polarization (P) of two DMS layers. Our results show that TMR decreases with increasing temperature and barrier strength, which may be useful in designing the nano spin-valve devices based on DMS and SC materials

  4. Spin dependent transport in diluted magnetic semiconductor/superconductor tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Shokri, A.A., E-mail: aashokri@pnu.ac.ir [Department of Physics, Payame Noor University, 19395-3697 Tehran (Iran, Islamic Republic of); Computational Physical Sciences Research Laboratory, School of Nano-Science, Institute for Studies in Theoretical Physics and Mathematics (IPM), P.O. Box 19395-5531, Tehran (Iran, Islamic Republic of); Negarestani, S. [Department of Physics, Payame Noor University, 19395-3697 Tehran (Iran, Islamic Republic of)

    2014-12-15

    Highlights: • Transport properties of DMS/SC/DMS double tunneling junctions have been investigated in the BTK model. • TMR dependence on barrier strength, spin polarization of DMS layers and the SC barrier parameters has been studied. • An oscillatory behavior with the quasi-particle energy has been observed in the conductance spectrum. - Abstract: A modification of Blonder–Tinkham–Klapwijk (BTK) model is proposed to describe transport properties of diluted magnetic semiconductor (DMS)/superconductor(SC)/DMS double tunneling junctions. Coherent spin-polarized transport is studied by taking into account the Andreev reflection on spatial variation of SC barrier parameters in the heterostructure. It is shown that the conductance spectrum exhibits an oscillatory behavior with quasi-particle energy, and the oscillation amplitude is reduced with increasing temperature. We also examine the dependence of tunneling magnetoresistance (TMR) on the barrier strength (κ) and spin polarization (P) of two DMS layers. Our results show that TMR decreases with increasing temperature and barrier strength, which may be useful in designing the nano spin-valve devices based on DMS and SC materials.

  5. Two-dimensional macroscopic quantum tunneling in multi-gap superconductor Josephson junctions

    International Nuclear Information System (INIS)

    Low-temperature characters of superconducting devices yield definite probes for different superconducting phenomena. We study the macroscopic quantum tunneling (MQT) in a Josephson junction, composed of a single-gap superconductor and a two-gap superconductor. Since this junction has two kinds to the superconducting phase differences, calculating the MQT escape rate requires the analysis of quantum tunneling in a multi-dimensional configuration space. Our approach is the semi-classical approximation along a 1D curve in a 2D potential- energy landscape, connecting two adjacent potential (local) minimums through a saddle point. We find that this system has two plausible tunneling paths; an in-phase path and an out-of-phase path. The former is characterized by the Josephson-plasma frequency, whereas the latter is by the frequency of the characteristic collective mode in a two-band superconductor, Josephson- Leggett mode. Depending on external bias current and inter-band Josephson-coupling energy, one of them mainly contributes to the MQT. Our numerical calculations show that the difference between the in-phase path and the out-of-phase path is manifest, with respect to the bias- current-dependence of the MQT escape rate. This result suggests that our MQT setting be an indicator of the Josephson-Leggett mode

  6. The maximal area of superconducting tunneling junction X-ray detectors determined by the required signal-to-noise ratio

    International Nuclear Information System (INIS)

    The intrinsically high energy resolution of superconducting tunneling junctions (STJ) requires a low noise charge sensitive amplifier circuit. The noise sources of such a junction + amplifier circuit are discussed. The dominant noise sources are the series noise and the 1/f flicker noise of the FET input stage, amplified by the large input capacitance of the STJ-detector. Means to reduce this capacitance are discussed. Reducing the preamplifier noise by a factor of two and the height of the potential barrier of the insulating layer by two orders of magnitude, by keeping the large conductance of the junction constant, would allow an increase in junction area by a factor of 15. (orig.)

  7. Improved tunnel magnetoresistance of magnetic tunnel junctions with Heusler Co2FeAl0.5Si0.5 electrodes fabricated by molecular beam epitaxy

    International Nuclear Information System (INIS)

    The authors have developed a magnetic tunnel junction of Co2FeAl0.5Si0.5 electrodes and a MgO barrier fabricated by molecular beam epitaxy and observed that this device had a tunnel magnetoresistance ratio of 386% at approximately 300 K and 832% at 9 K. The lower Co2FeAl0.5Si0.5 electrode was annealed during and after deposition resulting in a highly ordered structure with small roughness. This highly ordered structure could be obtained by annealing treatment even at low temperatures. Furthermore, a weak temperature dependence of the tunnel magnetoresistance ratio was observed for the developed magnetic tunnel junction.

  8. Single-photon 2-D imaging X-ray spectrometer employing trapping with four tunnel junctions

    International Nuclear Information System (INIS)

    We are developing single-photon 2-D imaging X-ray spectrometers for applications in X-ray astrophysics. The devices employing a Ta strip X-ray absorber with Al traps and a tunnel junction at each end have been tested. They achieve an energy resolution of 26 eV out of 5.9 keV over a limited length (Segall, IEEE Trans., in press) with a 1-D spatial resolution of about 2 μm over the full 160 μm length. By analytical and numerical simulations of the quasiparticle diffusion process, we study related devices with a square Ta absorber having four traps and attached junctions to provide 2-D imaging. The traps give charge division to the corners or to the edges of the square absorber. We find that these devices can give good 2-D spatial resolution. We discuss the operating principle and the factors which affect the spatial resolution

  9. Inelastic electron tunneling through degenerate and nondegenerate ground state polymeric junctions

    International Nuclear Information System (INIS)

    Highlights: • Current–voltage characteristics of two polymeric junctions are studied. • Current is reduced in phonon assistant tunneling regime. • Behavior of current is independent of temperature. • Elastic energy changes current drastically. - Abstract: The inelastic electron transport properties through two polymeric (trans-polyacetylene and polythiophene) molecular junctions are studied using Keldysh nonequilibrium Green function formalism. The Hamiltonian of the polymers is described via Su–Schrieffer–Heeger model and the metallic electrodes are modeled by the wide-band approximation. Results show that the step-like behavior of the current–voltage characteristics is deformed in presence of strong electron–phonon interaction. Also, the magnitude of current is slightly decreased in the phonon assistant electron transport regime. In addition, it is observed that the I–V curves are independent of temperature

  10. Quantum critical points in tunneling junction of topological superconductor and topological insulator

    Science.gov (United States)

    Zuo, Zheng-Wei; Kang, Da-wei; Wang, Zhao-Wu; Li, Liben

    2016-08-01

    The tunneling junction between one-dimensional topological superconductor and integer (fractional) topological insulator (TI), realized via point contact, is investigated theoretically with bosonization technology and renormalization group methods. For the integer TI case, in a finite range of edge interaction parameter, there is a non-trivial stable fixed point which corresponds to the physical picture that the edge of TI breaks up into two sections at the junction, with one side coupling strongly to the Majorana fermion and exhibiting perfect Andreev reflection, while the other side decouples, exhibiting perfect normal reflection at low energies. This fixed point can be used as a signature of the Majorana fermion and tested by nowadays experiment techniques. For the fractional TI case, the universal low-energy transport properties are described by perfect normal reflection, perfect Andreev reflection, or perfect insulating fixed points dependent on the filling fraction and edge interaction parameter of fractional TI.

  11. Size and voltage dependence of effective anisotropy in sub-100-nm perpendicular magnetic tunnel junctions

    Science.gov (United States)

    Piotrowski, Stephan K.; Bapna, Mukund; Oberdick, Samuel D.; Majetich, Sara A.; Li, Mingen; Chien, C. L.; Ahmed, Rizvi; Victora, R. H.

    2016-07-01

    Magnetic tunnel junctions with perpendicular magnetic anisotropy are investigated using a conductive atomic force microscope. The 1.23 -nm Co40Fe40B20 recording layer coercivity exhibits a size dependence which suggests single-domain behavior for diameters ≤100 nm. Focusing on devices with diameters smaller than 100 nm, we determine the effect of voltage and size on the effective device anisotropy Keff using two different techniques. Keff is extracted both from distributions of the switching fields of the recording and reference layers and from measurement of thermal fluctuations of the recording layer magnetization when a field close to the switching field is applied. The results from both sets of measurements reveal that Keff increases monotonically with decreasing junction diameter, consistent with the size dependence of the demagnetization energy density. We demonstrate that Keff can be controlled with a voltage down to the smallest size measured, 64 nm.

  12. Dual Control of Giant Field-like Spin Torque in Spin Filter Tunnel Junctions

    Science.gov (United States)

    Tang, Y.-H.; Chu, F.-C.; Kioussis, Nicholas

    2015-06-01

    We predict a giant field-like spin torque, , in spin-filter (SF) barrier tunnel junctions in sharp contrast to existing junctions based on nonmagnetic passive barriers. We demonstrate that has linear bias behavior, is independent of the SF thickness, and has odd parity with respect to the SF’s exchange splitting. Thus, it can be selectively controlled via external bias or external magnetic field which gives rise to sign reversal of via magnetic field switching. The underlying mechanism is the interlayer exchange coupling between the noncollinear magnetizations of the SF and free ferromagnetic electrode via the nonmagnetic insulating (I) spacer giving rise to giant spin-dependent reflection at the SF/I interface. These findings suggest that the proposed field-like-spin-torque MRAM may provide promising dual functionalities for both ‘reading’ and ‘writing’ processes which require lower critical current densities and faster writing and reading speeds.

  13. Macroscopic quantum tunneling and retrapping processes in moderately damped YBaCuO Josephson junctions

    International Nuclear Information System (INIS)

    The moderately damped regime in a Josephson junction (JJ) is quite common in devices characterized by low critical currents and therefore by low Josephson energies. Measurements of switching current distribution (SCD) are a direct way of discriminating the phase dynamics also in the nontrivial case of moderate damping, which is going to be more and more common with advances in nano-patterning superconductors and in materials science finalized to build hybrid systems. We report on measurements of SCDs, both in thermal and quantum regime, on moderately damped YBaCuO grain boundary biepitaxial JJs. A direct transition from phase diffusion regime to macroscopic quantum tunnelling occurs at about 130 mK. The crossover to the quantum regime is tuned by the magnetic field and phase dynamics is described by a fully consistent set of junction parameters derived through numerical simulations.

  14. Direct observation of current signal pulses from superconducting tunnel junction x-ray detector

    International Nuclear Information System (INIS)

    We developed the fast and low noise current readout circuit to directly observe signal current pulses from a superconducting tunnel junction (STJ). The developed circuit worked stable and is enough fast to obtain the information of the signal production process in the STJ. The rise time of current pulses ranged from 0.35 to 0.45 μsec was observed. The observed signals produced in the each electrode of the STJ can be discriminated clearly by the difference of the rise times. Moreover, the absorption events at the edge of the junction can be eliminated by the rise time discrimination. This result implies that the tail in the lower side of the peak spectrum can be reduced without any mechanical collimators. (author)

  15. Magnon excitation and temperature dependent transport properties in magnetic tunnel junctions with Heusler compound electrodes

    Science.gov (United States)

    Drewello, Volker; Ebke, Daniel; Schäfers, Markus; Kugler, Zoë; Reiss, Günter; Thomas, Andy

    2012-04-01

    Magnetic tunnel junctions were prepared with the Heusler compounds Co2FeAl, Co2FeSi, and Co2MnSi as the soft magnetic electrode. The Co2MnSi electrodes had a multilayer design that used either the Co2FeAl or the Co2FeSi compound as a buffer material. Pinned Co-Fe was used as the hard reference electrode. The electronic transport characteristics were analyzed by tunneling spectroscopy. The dependence of sample properties on the buffer material was of interest, especially the gap in the minority density of states of the Heusler electrode. The temperature dependence of the transport properties was also investigated.

  16. Molecular-Beam Epitaxially Grown MgB2 Thin Films and Superconducting Tunnel Junctions

    International Nuclear Information System (INIS)

    Since the discovery of its superconducting properties in 2001, magnesium diboride has generated terrific scientific and engineering research interest around the world. With a TC of 39K and two superconducting gaps, MgB2 has great promise from the fundamental point of view, as well as immediate applications. Several techniques for thin film deposition and heterojunction formation have been established, each with its own advantages and drawbacks. Here, we will present a brief overview of research based on MgB2 thin films grown by molecular beam epitaxy coevaporation of Mg and B. The films are smooth and highly crystalline, and the technique allows for virtually any heterostructure to be formed, including all-MgB2 tunnel junctions. Such devices have been characterized, with both quasiparticle and Josephson tunneling reported. MgB2 remains a material of great potential for a multitude of further characterization and exploration research projects and applications.

  17. Paramagnetic molecule induced strong antiferromagnetic exchange coupling on a magnetic tunnel junction based molecular spintronics device

    Science.gov (United States)

    Tyagi, Pawan; Baker, Collin; D'Angelo, Christopher

    2015-07-01

    This paper reports our Monte Carlo (MC) studies aiming to explain the experimentally observed paramagnetic molecule induced antiferromagnetic coupling between ferromagnetic (FM) electrodes. Recently developed magnetic tunnel junction based molecular spintronics devices (MTJMSDs) were prepared by chemically bonding the paramagnetic molecules between the FM electrodes along the tunnel junction’s perimeter. These MTJMSDs exhibited molecule-induced strong antiferromagnetic coupling. We simulated the 3D atomic model analogous to the MTJMSD and studied the effect of molecule’s magnetic couplings with the two FM electrodes. Simulations show that when a molecule established ferromagnetic coupling with one electrode and antiferromagnetic coupling with the other electrode, then theoretical results effectively explained the experimental findings. Our studies suggest that in order to align MTJMSDs’ electrodes antiparallel to each other, the exchange coupling strength between a molecule and FM electrodes should be ˜50% of the interatomic exchange coupling for the FM electrodes.

  18. Optical modulation of nano-gap tunnelling junctions comprising self-assembled monolayers of hemicyanine dyes

    Science.gov (United States)

    Pourhossein, Parisa; Vijayaraghavan, Ratheesh K.; Meskers, Stefan C. J.; Chiechi, Ryan C.

    2016-06-01

    Light-driven conductance switching in molecular tunnelling junctions that relies on photoisomerization is constrained by the limitations of kinetic traps and either by the sterics of rearranging atoms in a densely packed monolayer or the small absorbance of individual molecules. Here we demonstrate light-driven conductance gating; devices comprising monolayers of hemicyanine dyes trapped between two metallic nanowires exhibit higher conductance under irradiation than in the dark. The modulation of the tunnelling current occurs faster than the timescale of the measurement (~1 min). We propose a mechanism in which a fraction of molecules enters an excited state that brings the conjugated portion of the monolayer into resonance with the electrodes. This mechanism is supported by calculations showing the delocalization of molecular orbitals near the Fermi energy in the excited and cationic states, but not the ground state and a reasonable change in conductance with respect to the effective barrier width.

  19. Electric field control of spin dynamics in a magnetically active tunnel junction

    International Nuclear Information System (INIS)

    The dynamics of a single spin embedded in a tunnelling junction is studied. Within a nonequilibrium Keldysh Green's function technique, we derive a quantum Langevin equation describing the spin dynamics. In the high temperature limit, it reduces to a Bloch equation, for which the spin relaxation rate, as determined by the temporal fluctuation, is linearly proportional to the temperature. In the opposite limit, the relaxation rate depends on the applied voltage, in contrast to the case of a spin in an equilibrium environment. We also show that spin-flip transition processes during electron tunnelling convert the applied electric field (i.e. voltage bias) into an effective magnetic field. Consequently, the dynamics of the spin, otherwise precessing along the static magnetic field, will have either a frequency shift proportional to the dc bias or a magnetic resonance driven indirectly by an ac electric field at the Larmor frequency ωL. An experiment to measure this effect is also proposed

  20. Electroforming, magnetic and resistive switching in MgO-based tunnel junctions

    International Nuclear Information System (INIS)

    Magnetic tunnel junctions (MTJs) are under investigation since they offer great potential for applications in magnetic memories. An interesting effect in TJs concerns non-volatile resistive switching of non-magnetic origin. We report magnetic (magnetoresistance) and structural (resistive; R) switching in MgO-based MTJs (barrier thicknesses t = 0.75, 1.35 nm). As-grown MTJs display R-switching only in the thinnest series, while thicker barrier samples need an electroforming step for R-switching to occur. Forming changes the electrical resistance temperature dependence, from tunnel- to metallic-like, revealing the formation of conductive bridges across the barrier which, leading to local high electrical fields and temperatures, are essential for resistive switching.

  1. Enhanced spin-torque in double tunnel junctions using a nonmagnetic-metal spacer

    Energy Technology Data Exchange (ETDEWEB)

    Chen, C. H.; Cheng, Y. H.; Ko, C. W.; Hsueh, W. J., E-mail: hsuehwj@ntu.edu.tw [Nanomagnetism Group, Department of Engineering Science and Ocean Engineering, National Taiwan University, 1, Sec. 4, Roosevelt Road, Taipei 10660, Taiwan (China)

    2015-10-12

    This study proposes an enhancement in the spin-transfer torque of a magnetic tunnel junction (MTJ) designed with double-barrier layer structure using a nonmagnetic metal spacer, as a replacement for the ferromagnetic material, which is traditionally used in these double-barrier stacks. Our calculation results show that the spin-transfer torque and charge current density of the proposed double-barrier MTJ can be as much as two orders of magnitude larger than the traditional double-barrier one. In other words, the proposed double-barrier MTJ has a spin-transfer torque that is three orders larger than that of the single-barrier stack. This improvement may be attributed to the quantum-well states that are formed in the nonmagnetic metal spacer and the resonant tunneling mechanism that exists throughout the system.

  2. Optical modulation of nano-gap tunnelling junctions comprising self-assembled monolayers of hemicyanine dyes.

    Science.gov (United States)

    Pourhossein, Parisa; Vijayaraghavan, Ratheesh K; Meskers, Stefan C J; Chiechi, Ryan C

    2016-01-01

    Light-driven conductance switching in molecular tunnelling junctions that relies on photoisomerization is constrained by the limitations of kinetic traps and either by the sterics of rearranging atoms in a densely packed monolayer or the small absorbance of individual molecules. Here we demonstrate light-driven conductance gating; devices comprising monolayers of hemicyanine dyes trapped between two metallic nanowires exhibit higher conductance under irradiation than in the dark. The modulation of the tunnelling current occurs faster than the timescale of the measurement (∼1 min). We propose a mechanism in which a fraction of molecules enters an excited state that brings the conjugated portion of the monolayer into resonance with the electrodes. This mechanism is supported by calculations showing the delocalization of molecular orbitals near the Fermi energy in the excited and cationic states, but not the ground state and a reasonable change in conductance with respect to the effective barrier width. PMID:27272394

  3. Degradation of magnetic tunnel junctions with thin AlOx barrier

    Directory of Open Access Journals (Sweden)

    Tadashi Mihara, Yoshinari Kamakura, Masato Morifuji and Kenji Taniguchi

    2007-01-01

    Full Text Available The degradation of magnetic tunnel junctions (MTJs with AlOx barrier was experimentally investigated. Constant voltage stress (CVS measurement was carried out to monitor the time evolution of the conductance and tunneling magnetoresistance (TMR of MTJs. The gradual increase of the stress-induced leakage current (SILC was observed prior to the breakdown, following a power law function of stress time with an exponent of about 0.2–0.4, which is similar to the case of the ultrathin gate oxide films in MOSFETs. The measured TMR for SILC suggests that the spin-dependent current component would be involved in the early stage of degradation, while spin-independent conduction becomes dominant before the breakdown resulting in a decrease of TMR.

  4. A scanning tunneling microscope break junction method with continuous bias modulation

    Science.gov (United States)

    Beall, Edward; Yin, Xing; Waldeck, David H.; Wierzbinski, Emil

    2015-09-01

    Single molecule conductance measurements on 1,8-octanedithiol were performed using the scanning tunneling microscope break junction method with an externally controlled modulation of the bias voltage. Application of an AC voltage is shown to improve the signal to noise ratio of low current (low conductance) measurements as compared to the DC bias method. The experimental results show that the current response of the molecule(s) trapped in the junction and the solvent media to the bias modulation can be qualitatively different. A model RC circuit which accommodates both the molecule and the solvent is proposed to analyze the data and extract a conductance for the molecule.Single molecule conductance measurements on 1,8-octanedithiol were performed using the scanning tunneling microscope break junction method with an externally controlled modulation of the bias voltage. Application of an AC voltage is shown to improve the signal to noise ratio of low current (low conductance) measurements as compared to the DC bias method. The experimental results show that the current response of the molecule(s) trapped in the junction and the solvent media to the bias modulation can be qualitatively different. A model RC circuit which accommodates both the molecule and the solvent is proposed to analyze the data and extract a conductance for the molecule. Electronic supplementary information (ESI) available: Additional current-time traces recorded for mesitylene, 2,4-dichlorotoluene, and 3,4-dichlorotoluene under different bias modulation frequencies, determined solvent capacitance values, and traces recorded under various geometrical constraints in the experimental cell. See DOI: 10.1039/c5nr04649a

  5. dV/dI double peak structures in superlattice-based tunnel junctions

    International Nuclear Information System (INIS)

    We realized high quality tunnel junctions using bcc-bcc Mo-Ta superlattices in the modulation wavelength range 16--450 angstrom as the first electrode. The dV/dI vs. V characteristics showed a double peak structure in the wavelength range 50--250 angstrom. We fitted the temperature behavior of these structures using both a two band model and the proximity effect theory. Preliminary calculations of a possible microscopic explanation of this data are presented. 8 refs., 4 figs

  6. Temperature dependence of microwave oscillations in magnetic tunnel junctions with a perpendicularly magnetized free layer

    Energy Technology Data Exchange (ETDEWEB)

    Guo, Peng; Feng, Jiafeng, E-mail: hxwei@iphy.ac.cn, E-mail: jiafengfeng@iphy.ac.cn; Wei, Hongxiang, E-mail: hxwei@iphy.ac.cn, E-mail: jiafengfeng@iphy.ac.cn; Han, Xiufeng [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Fang, Bin; Zhang, Baoshun; Zeng, Zhongming [Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Ruoshui Road 398, Suzhou 215123 (China)

    2015-01-05

    We experimentally study the temperature dependence of the spin-transfer-torque-induced microwave oscillations in MgO-based magnetic tunnel junction nanopillars with a perpendicularly magnetized free layer. We demonstrate that the oscillation frequency increases rapidly with decreasing temperature, which is mainly ascribed to the temperature dependence of both the saturation magnetization and the perpendicular magnetic anisotropy. We also find that a strong temperature dependence of the output power while a nonmonotonic temperature dependence of spectral linewidth are maintained for a constant dc bias in measured temperature range. Possible mechanisms leading to the different dependences of oscillation frequency, output power, and linewidth are discussed.

  7. Probing flexible conformations in molecular junctions by inelastic electron tunneling spectroscopy

    Directory of Open Access Journals (Sweden)

    Mingsen Deng

    2015-01-01

    Full Text Available The probe of flexible molecular conformation is crucial for the electric application of molecular systems. We have developed a theoretical procedure to analyze the couplings of molecular local vibrations with the electron transportation process, which enables us to evaluate the structural fingerprints of some vibrational modes in the inelastic electron tunneling spectroscopy (IETS. Based on a model molecule of Bis-(4-mercaptophenyl-ether with a flexible center angle, we have revealed and validated a simple mathematical relationship between IETS signals and molecular angles. Our results might open a route to quantitatively measure key geometrical parameters of molecular junctions, which helps to achieve precise control of molecular devices.

  8. Bias voltage induced resistance switching effect in single-molecule magnets’ tunneling junction

    International Nuclear Information System (INIS)

    An electric-pulse-induced reversible resistance change effect in a molecular magnetic tunneling junction, consisting of a single-molecule magnet (SMM) sandwiched in one nonmagnetic and one ferromagnetic electrode, is theoretically investigated. By applying a time-varying bias voltage, the SMM's spin orientation can be manipulated with large bias voltage pulses. Moreover, the different magnetic configuration at high-resistance/low-resistance states can be ‘read out’ by utilizing relative low bias voltage. This device scheme can be implemented with current technologies (Khajetoorians et al 2013 Science 339 55) and has potential application in molecular spintronics and high-density nonvolatile memory devices. (paper)

  9. Probing flexible conformations in molecular junctions by inelastic electron tunneling spectroscopy

    International Nuclear Information System (INIS)

    The probe of flexible molecular conformation is crucial for the electric application of molecular systems. We have developed a theoretical procedure to analyze the couplings of molecular local vibrations with the electron transportation process, which enables us to evaluate the structural fingerprints of some vibrational modes in the inelastic electron tunneling spectroscopy (IETS). Based on a model molecule of Bis-(4-mercaptophenyl)-ether with a flexible center angle, we have revealed and validated a simple mathematical relationship between IETS signals and molecular angles. Our results might open a route to quantitatively measure key geometrical parameters of molecular junctions, which helps to achieve precise control of molecular devices

  10. Manipulating the spin states in a double molecular magnets tunneling junction

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Liang; Liu, Xi [National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093 (China); Zhang, Zhengzhong, E-mail: zeikeezhang@126.com [National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093 (China); Nano Science and Technology Institute, University of Science and Technology of China, Suzhou 215123 (China); Wang, Ruiqiang [Laboratory of Quantum Engineering and Quantum Materials, South China Normal University, Guangzhou 510006 (China)

    2014-01-17

    We theoretically explore the spin transport through nano-structures consisting of two serially coupled single-molecular magnets (SMM) sandwiched between two nonmagnetic electrodes. We find that the magnetization of SMM can be controlled by the spin transfer torque with respect to the bias voltage direction, and the electron current can be switched on/off in different magnetic structures. Such a manipulation is performed by full electrical manner, and needs neither external magnetic field nor ferromagnetic electrodes in the tunneling junction. The proposal device scheme can be realized with the use of the present technology and has potential applications in molecular spintronics or quantum information processing.

  11. Current-induced magnetization reversal in a (Ga,Mn)As-based magnetic tunnel junction

    OpenAIRE

    Moriya, R.; Hamaya, K.; Oiwa, A.; Munekata, H.

    2004-01-01

    We report current-induced magnetization reversal in a ferromagnetic semiconductor-based magnetic tunnel junction (Ga,Mn)As/AlAs/(Ga,Mn)As prepared by molecular beam epitaxy on a p-GaAs(001) substrate. A change in magneto-resistance that is asymmetric with respect to the current direction is found with the excitation current of 10^6 A/cm^2. Contributions of both unpolarized and spin-polarized components are examined, and we conclude that the partial magnetization reversal occurs in the (Ga,Mn)...

  12. Non-equilibrium dynamics ofa single spin in a tunnel junction

    OpenAIRE

    Hammar, Henning

    2014-01-01

    Making spintronic devices is a hot topic for future technical development. In this work the non-equilibrium dynamics of a single spin in a tunnel junction is analyzed and numerically simulated. This is done in order to understand the dynamics of e.g. a magnetic molecule between two metal contacts for future spintronic devices. The work starts with looking at the system in a many-body theory picture in order to derive the interesting properties of the system. An initial solution for the system...

  13. Manipulating the spin states in a double molecular magnets tunneling junction

    International Nuclear Information System (INIS)

    We theoretically explore the spin transport through nano-structures consisting of two serially coupled single-molecular magnets (SMM) sandwiched between two nonmagnetic electrodes. We find that the magnetization of SMM can be controlled by the spin transfer torque with respect to the bias voltage direction, and the electron current can be switched on/off in different magnetic structures. Such a manipulation is performed by full electrical manner, and needs neither external magnetic field nor ferromagnetic electrodes in the tunneling junction. The proposal device scheme can be realized with the use of the present technology and has potential applications in molecular spintronics or quantum information processing.

  14. Observation of Thermoelectric Currents in High-Field Superconductor-Ferromagnet Tunnel Junctions

    Science.gov (United States)

    Kolenda, S.; Wolf, M. J.; Beckmann, D.

    2016-03-01

    We report on the experimental observation of spin-dependent thermoelectric currents in superconductor-ferromagnet tunnel junctions in high magnetic fields. The thermoelectric signals are due to a spin-dependent lifting of the particle-hole symmetry, and are found to be in excellent agreement with recent theoretical predictions. The maximum Seebeck coefficient inferred from the data is about -100 μ V /K , much larger than commonly found in metallic structures. Our results directly prove the coupling of spin and heat transport in high-field superconductors.

  15. Polarity-tunable magnetic tunnel junctions based on ferromagnetism at oxide heterointerfaces

    OpenAIRE

    Ngo, Thach D.N.; Chang, Jung-Won; Lee, Kyujoon; Han, Seungju; Lee, Joon Sung; Kim, Young Heon; Jung, Myung-Hwa; Doh, Yong-Joo; Choi, Mahn-Soo; Song, Jonghyun; Kim, Jinhee

    2015-01-01

    Complex oxide systems have attracted considerable attention because of their fascinating properties, including the magnetic ordering at the conducting interface between two band insulators, such as LaAlO3 and SrTiO3. However, the manipulation of the spin degree of freedom at the LaAlO3/SrTiO3 heterointerface has remained elusive. Here, we have fabricated hybrid magnetic tunnel junctions consisting of Co and LaAlO3/SrTiO3 ferromagnets with the insertion of a Ti layer in between, which clearly ...

  16. Annular superconducting tunnel junction detectors: Experimental results under X-ray illumination

    International Nuclear Information System (INIS)

    We present an experiment detecting X-rays by an annular Nb-based Superconducting Tunnel Junction (STJ). In one magnetic field configuration, we stably trapped a single magnetic fluxon in the STJ barrier during the transition to the superconducting state. This is an innovative configuration which avoids the use of an externally applied field during detector operation. This offers potential benefits for STJs used in imaging arrays. In this configuration, and also in the conventional one with an externally applied parallel magnetic field, we observed current pulses produced by single 6 keV X-rays. The pulses were identical for both configurations

  17. Magnetic Tunnel Junction-Based On-Chip Microwave Phase and Spectrum Analyzer

    Science.gov (United States)

    Fan, Xin; Chen, Yunpeng; Xie, Yunsong; Kolodzey, James; Wilson, Jeffrey D.; Simons, Rainee N.; Xiao, John Q.

    2014-01-01

    A magnetic tunnel junction (MTJ)-based microwave detector is proposed and investigated. When the MTJ is excited by microwave magnetic fields, the relative angle between the free layer and pinned layer alternates, giving rise to an average resistance change. By measuring the average resistance change, the MTJ can be utilized as a microwave power sensor. Due to the nature of ferromagnetic resonance, the frequency of an incident microwave is directly determined. In addition, by integrating a mixer circuit, the MTJ-based microwave detector can also determine the relative phase between two microwave signals. Thus, the MTJbased microwave detector can be used as an on-chip microwave phase and spectrum analyzer.

  18. Low-noise parametric amplification at 35 GHz in a single Josephson tunnel junction

    DEFF Research Database (Denmark)

    Mygind, Jesper; Pedersen, Niels Falsig; Sørensen, O. H.; Dueholm, B.; Levinsen, M. T.

    1979-01-01

    Parametric amplification at 35 GHz has been obtained using a single Josephson tunnel junction as the active element. The amplifier was operated in the singly quasidegenerate mode with a pump frequency at 70 GHz. The noise temperature was measured and found correlated with the gain. At the highest...... gain achieved, 11.6 dB, the noise temperature was 400 K. The noise temperature was reduced considerably by decreasing the gain. At 8 and 4 dB we found 165±25 K and 50±30 K, respectively. Applied Physics Letters is copyrighted by The American Institute of Physics....

  19. Thermoelectric effects in FeCo|MgO|FeCo magnetic tunnel junctions

    OpenAIRE

    Wang, Shizhuo; Xia, Ke; Bauer, Gerrit E. W.

    2014-01-01

    We studied the thermoelectric coefficients (Seebeck and thermal conductance)of FeCo|MgO|FeCo(001) magnetic tunnel junctions (MTJs) from first principles using a generalized Landauer-B\\"{u}ttiker formalism. FeCo|MgO|FeCo(001) MTJs usually yield smaller thermoelectric effects compared with epitaxial Fe|MgO|Fe(001) MTJs. The (magneto-) Seebeck effect is sensitive to the details of the FeCo$|$MgO interfaces. Interfacial oxygen vacancies (OVs) can enhance the thermoelectric effects in MTJs greatly...

  20. Influence of a Ta spacer on the magnetic and transport properties of perpendicular magnetic tunnel junctions

    OpenAIRE

    Cuchet, Léa; Rodmacq, Bernard; Auffret, Stéphane; Sousa, Ricardo C.; Ducruet, Clarisse; Dieny, Bernard

    2013-01-01

    International audience Ultrathin Ta layers were inserted in the bottom hard (Co/Pt)/Ta/CoFeB/MgO magnetic electrode of perpendicular magnetic tunnel junctions. The magnetization of the top part of this electrode abruptly falls in-plane when the Ta thickness exceeds 0.45 nm. This results from the balance between the various energy terms acting on this layer (exchange-like coupling through Ta, demagnetizing energy, and perpendicular anisotropy at the CoFeB/MgO interface). For small Ta thickn...

  1. Frequency shift of spin waves in tunnel-junction spin-transfer nano-oscillators

    Science.gov (United States)

    Rodríguez-Suárez, R. L.; Matos-Abiague, A.; Azevedo, A.; Rezende, S. M.

    2010-10-01

    The excitations of microwave spin waves in magnetic tunnel junctions are theoretically investigated. An analytical approach which describes the dependence of the microwave precession frequency on the applied voltage is developed. It is shown that the spin-wave frequency is directly related to both the in-plane and perpendicular spin-transfer torques. In the low field regime the perpendicular torque can induce changes in the slope of the oscillation frequency versus applied voltage (df/dv) from negative (redshift) to positive (blueshift) values.

  2. Observation of Thermoelectric Currents in High-Field Superconductor-Ferromagnet Tunnel Junctions.

    Science.gov (United States)

    Kolenda, S; Wolf, M J; Beckmann, D

    2016-03-01

    We report on the experimental observation of spin-dependent thermoelectric currents in superconductor-ferromagnet tunnel junctions in high magnetic fields. The thermoelectric signals are due to a spin-dependent lifting of the particle-hole symmetry, and are found to be in excellent agreement with recent theoretical predictions. The maximum Seebeck coefficient inferred from the data is about -100  μV/K, much larger than commonly found in metallic structures. Our results directly prove the coupling of spin and heat transport in high-field superconductors. PMID:26991193

  3. Dynamical properties of three terminal magnetic tunnel junctions: Spintronics meets spin-orbitronics

    International Nuclear Information System (INIS)

    This Letter introduces a micromagnetic model able to characterize the magnetization dynamics in three terminal magnetic tunnel junctions, where the effects of spin-transfer torque and spin-orbit torque are taken into account. Our results predict that the possibility to separate electrically those two torque sources is very promising from a technological point of view for both next generation of nanoscale spintronic oscillators and microwave detectors. A scalable synchronization scheme based on the parallel connection of those three terminal devices is also proposed

  4. Patterning of sub-50 nm perpendicular CoFeB/MgO-based magnetic tunnel junctions

    Science.gov (United States)

    Tryputen, Larysa; Tu, Kun-Hua; Piotrowski, Stephan K.; Bapna, Mukund; Majetich, Sara A.; Sun, Congli; Voyles, Paul M.; Almasi, Hamid; Wang, Weigang; Vargas, Patricio; Tresback, Jason S.; Ross, Caroline A.

    2016-05-01

    Perpendicular magnetic tunnel junctions (p-MTJs) were patterned into nanopillars using electron-beam lithography to study their scaling and switching behaviour. Magnetoresistance measurements of annealed and unannealed p-MTJ films using scanning probe microscopy showed good agreement with Monte Carlo modeling. p-MTJ pillars demonstrated clear parallel magnetic states, both ‘up’ or both ‘down’ following AC-demagnetization. Significant variability in the resistance of p-MTJ pillars was observed and attributed to edge features generated during patterning or local inhomogeneity in the MgO layer.

  5. Multiferroic tunnel junctions and ferroelectric control of magnetic state at interface (invited)

    KAUST Repository

    Yin, Y. W.

    2015-03-03

    As semiconductor devices reach ever smaller dimensions, the challenge of power dissipation and quantum effect place a serious limit on the future device scaling. Recently, a multiferroic tunnel junction (MFTJ) with a ferroelectric barrier sandwiched between two ferromagnetic electrodes has drawn enormous interest due to its potential applications not only in multi-level data storage but also in electric field controlled spintronics and nanoferronics. Here, we present our investigations on four-level resistance states, giant tunneling electroresistance (TER) due to interfacial magnetoelectric coupling, and ferroelectric control of spin polarized tunneling in MFTJs. Coexistence of large tunneling magnetoresistance and TER has been observed in manganite/(Ba, Sr)TiO3/manganite MFTJs at low temperatures and room temperature four-resistance state devices were also obtained. To enhance the TER for potential logic operation with a magnetic memory, La0.7Sr0.3MnO3/BaTiO3/La0.5Ca0.5MnO3 /La0.7Sr0.3MnO3 MFTJs were designed by utilizing a bilayer tunneling barrier in which BaTiO3 is ferroelectric and La0.5Ca0.5MnO3 is close to ferromagnetic metal to antiferromagnetic insulator phase transition. The phase transition occurs when the ferroelectric polarization is reversed, resulting in an increase of TER by two orders of magnitude. Tunneling magnetoresistance can also be controlled by the ferroelectric polarization reversal, indicating strong magnetoelectric coupling at the interface.

  6. Multiferroic tunnel junctions and ferroelectric control of magnetic state at interface (invited)

    Energy Technology Data Exchange (ETDEWEB)

    Yin, Y. W.; Raju, M.; Li, Qi, E-mail: Qil1@psu.edu [Department of Physics, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Hu, W. J. [Physical Sciences and Engineering Division, King Abdullah University of Science and Technology, Thuwal 23955-6900 (Saudi Arabia); Burton, J. D.; Gruverman, A.; Tsymbal, E. Y. [Department of Physics and Astronomy and Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, Nebraska 68588-0299 (United States); Kim, Y.-M.; Borisevich, A. Y.; Pennycook, S. J. [Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States); Yang, S. M.; Noh, T. W. [IBS-Center for Functional Interfaces of Correlated Electron Systems, Department of Physics and Astronomy, Seoul National University, Seoul 151-747 (Korea, Republic of); Li, X. G. [Hefei National Laboratory for Physical Sciences at Microscale, Department of Physics, University of Science and Technology of China, Hefei 230026 (China); Zhang, Z. D. [Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016 (China)

    2015-05-07

    As semiconductor devices reach ever smaller dimensions, the challenge of power dissipation and quantum effect place a serious limit on the future device scaling. Recently, a multiferroic tunnel junction (MFTJ) with a ferroelectric barrier sandwiched between two ferromagnetic electrodes has drawn enormous interest due to its potential applications not only in multi-level data storage but also in electric field controlled spintronics and nanoferronics. Here, we present our investigations on four-level resistance states, giant tunneling electroresistance (TER) due to interfacial magnetoelectric coupling, and ferroelectric control of spin polarized tunneling in MFTJs. Coexistence of large tunneling magnetoresistance and TER has been observed in manganite/(Ba, Sr)TiO{sub 3}/manganite MFTJs at low temperatures and room temperature four-resistance state devices were also obtained. To enhance the TER for potential logic operation with a magnetic memory, La{sub 0.7}Sr{sub 0.3}MnO{sub 3}/BaTiO{sub 3}/La{sub 0.5}Ca{sub 0.5}MnO{sub 3} /La{sub 0.7}Sr{sub 0.3}MnO{sub 3} MFTJs were designed by utilizing a bilayer tunneling barrier in which BaTiO{sub 3} is ferroelectric and La{sub 0.5}Ca{sub 0.5}MnO{sub 3} is close to ferromagnetic metal to antiferromagnetic insulator phase transition. The phase transition occurs when the ferroelectric polarization is reversed, resulting in an increase of TER by two orders of magnitude. Tunneling magnetoresistance can also be controlled by the ferroelectric polarization reversal, indicating strong magnetoelectric coupling at the interface.

  7. Failure Analysis in Magnetic Tunnel Junction Nanopillar with Interfacial Perpendicular Magnetic Anisotropy

    Directory of Open Access Journals (Sweden)

    Weisheng Zhao

    2016-01-01

    Full Text Available Magnetic tunnel junction nanopillar with interfacial perpendicular magnetic anisotropy (PMA-MTJ becomes a promising candidate to build up spin transfer torque magnetic random access memory (STT-MRAM for the next generation of non-volatile memory as it features low spin transfer switching current, fast speed, high scalability, and easy integration into conventional complementary metal oxide semiconductor (CMOS circuits. However, this device suffers from a number of failure issues, such as large process variation and tunneling barrier breakdown. The large process variation is an intrinsic issue for PMA-MTJ as it is based on the interfacial effects between ultra-thin films with few layers of atoms; the tunneling barrier breakdown is due to the requirement of an ultra-thin tunneling barrier (e.g., <1 nm to reduce the resistance area for the spin transfer torque switching in the nanopillar. These failure issues limit the research and development of STT-MRAM to widely achieve commercial products. In this paper, we give a full analysis of failure mechanisms for PMA-MTJ and present some eventual solutions from device fabrication to system level integration to optimize the failure issues.

  8. InP tunnel junction for InGaAs/InP tandem solar cells

    Science.gov (United States)

    Vilela, M. F.; Freundlich, A.; Bensaoula, A.; Medelci, N.; Renaud, P.

    1995-10-01

    Chemical beam epitaxy (CBE) has been shown to allow the growth of high quality materials with reproducible complex compositional and doping profiles. The main advantage of CBE compared to metalorganic chemical vapor deposition (MOCVD), the most popular technique for InP-based photovoltaic device fabrication, is the ability to grow high purity epilayers at much lower temperatures (450-530 C). We have previously shown that CBE is perfectly suited toward the fabrication of complex photovoltaic devices such as InP/InGaAs monolithically integrated tandem solar cells, because its low process temperature preserves the electrical characteristics of the InGaAs tunnel junction commonly used as an ohmic interconnect. In this work using CBE for the fabrication of optically transparent (with respect to the bottom cell) InP tunnel diodes is demonstrated. Epitaxial growth were performed in a Riber CBE 32 system using PH3 and TMIn as III and V precursors. Solid Be (p-type) and Si (n-type) have been used as doping sources, allowing doping levels up to 2 x 10(exp -19)/cu cm and 1 x 10(exp -19)/cu cm for n and p type respectively. The InP tunnel junction characteristics and the influence of the growth's conditions (temperature, growth rate) over its performance have been carefully investigated. InP p(++)/n(++) tunnel junction with peak current densities up to 1600 A/sq cm and maximum specific resistivities (V(sub p)/I(sub p) - peak voltage to peak current ratio) in the range of 10(exp -4) Omega-sq cm were obtained. The obtained peak current densities exceed the highest results previously reported for their lattice matched counterparts, In(0.53)Ga( 0.47)As and should allow the realization of improved minimal absorption losses in the interconnect InP/InGaAs tandem devices for Space applications. Owing to the low process temperature required for the top cell, these devices exhibit almost no degradation of its characteristics after the growth of subsequent thick InP layer suggesting

  9. Large influence of capping layers on tunnel magnetoresistance in CoFe/MgO/CoFe magnetic tunnel junctions

    CERN Document Server

    Zhou, Jiaqi; Wang, Yin; Peng, Shouzhong; Qiao, Junfeng; Su, Li; Zeng, Lang; Lei, Na; Zhang, Youguang; Bournel, Arnaud

    2016-01-01

    We report the first-principles theoretical investigations of the tunnel magnetoresistance(TMR) effect in the symmetric capping layer/CoFe(001)/MgO(001)/CoFe(001)/capping layer magnetic tunnel junctions(MTJs) with Ta, Hf and Ir used as capping layer materials. Spin-resolved conductance and TMR ratios are shown and it is found that the TMR ratio is sensitive to the capping layer material. The spin polarization of s state in Co atom at the CoFe/capping layer interface is presented to explain the influence on TMR ratio caused by different capping layers, and we can obtain a high spin polarization value and a giant TMR ratio when Ir is used, demonstrating that Ir is an ideal capping layer material. We also study the spin-polarized transport properties in the Brillouin zone. In the parallel condition, a central broad peak is found in the majority-spin channel due to the {\\Delta}1 state, while sharp transmission probability peaks at some k||-points appear in the minority-spin channel. The sharp peak phenomenon is at...

  10. Electric-field manipulation of magnetization rotation and tunneling magnetoresistance of magnetic tunnel junctions at room temperature

    Science.gov (United States)

    Chen, Aitian; Li, Peisen; Li, Dalai; Zhao, Yonggang; Zhang, Sen; Yang, Lifeng; Liu, Yan; Zhu, Meihong; Zhang, Huiyun; Han, Xiufeng

    2015-03-01

    Recent studies on the electric-field control of tunneling magnetoresistance (TMR) have attracted considerable attention for low power consumption. So far two methods have been demonstrated for electric-field control of TMR. One method uses ferroelectric or multiferroic barriers, which is limited by low temperature. The other is nanoscale thin film magnetic tunnel junction (MTJ), but the assistance of a magnetic field is required. Therefore, electric-field control of TMR at room temperature without a magnetic field is highly desired. One promising way is to employ strain-mediated coupling in ferromagnetic/piezoelectric structure. Though MTJs/piezoelectric has been predicted by theory, experiment work is still lacking. We deposited CoFeB/AlOx/CoFeB on Pb(Mg1/3Nb2/3)0.7Ti0.3O3 (PMN-PT) ferroelectric single crystal. Under external electric fields, PMN-PT will produce a piezostrain due to piezoelectric effect, and the piezostrain transfers to ferromagnetic film to change the magnetic anisotropy. We demonstrate a reversible, continuous magnetization rotation and manipulation of TMR at room temperature by electric fields without the assistance of a magnetic field.

  11. Size dependence of nanosecond-scale spin-torque switching in perpendicularly magnetized tunnel junctions

    Science.gov (United States)

    Devolder, T.; Le Goff, A.; Nikitin, V.

    2016-06-01

    We have time resolved the spin-transfer-torque-induced switching in perpendicularly magnetized tunnel junctions of diameters from 50 to 250 nm in the subthreshold thermally activated regime. When the field and the spin torque concur to both favor the P to AP transition, the reversal yields monotonic resistance ramps that can be interpreted as a domain wall propagation through the device at velocities of the order of 17 to 30 nm/ns; smaller cells switch faster, and proportionally to their diameter. At the largest sizes, transient domain wall pinning can occasionally occur. When the field hinders the P to AP transition triggered by the spin torque, the P to AP switching is preceded by repetitive switching attempts, during which the resistance transiently increases until successful reversal occurs. At 50 nm, the P to AP switching proceeds reproducibly in 3 ns, with a monotonic featureless increase of the device resistance. In the reverse transition (AP to P), the variability of thermally activated reversal is not restricted to stochastic variations of incubation delays before the onset of reversal: several reversal paths are possible even in the smallest perpendicularly magnetized junctions. Besides, the nonuniform nature of the magnetic response seems still present at the nanoscale, with sometimes electrical signatures of strong disorder during the AP to P reversal. The AP to P transition is preceded by a strong instability of the AP states in devices larger than 100 nm. The resistance becomes extremely agitated before switching to P in a path yielding a slow (20 to 50 ns) and irregular increase of the conductance with substantial event-to-event variability. Unreversed bubbles of typical diameter 60 nm can persist a few additional microseconds in the largest junctions. The complexity of the AP to P switching is reduced but not suppressed when the junctions are downsized below 60 nm. The instability of the initial AP state is no longer detected but the other features

  12. Integrating atomic layer deposition and ultra-high vacuum physical vapor deposition for in situ fabrication of tunnel junctions

    International Nuclear Information System (INIS)

    Atomic Layer Deposition (ALD) is a promising technique for growing ultrathin, pristine dielectrics on metal substrates, which is essential to many electronic devices. Tunnel junctions are an excellent example which require a leak-free, ultrathin dielectric tunnel barrier of typical thickness around 1 nm between two metal electrodes. A challenge in the development of ultrathin dielectric tunnel barriers using ALD is controlling the nucleation of dielectrics on metals with minimal formation of native oxides at the metal surface for high-quality interfaces between the tunnel barrier and metal electrodes. This poses a critical need for integrating ALD with ultra-high vacuum (UHV) physical vapor deposition. In order to address these challenges, a viscous-flow ALD chamber was designed and interfaced to an UHV magnetron sputtering chamber via a load lock. A sample transportation system was implemented for in situ sample transfer between the ALD, load lock, and sputtering chambers. Using this integrated ALD-UHV sputtering system, superconductor-insulator-superconductor (SIS) Nb-Al/Al2O2/Nb Josephson tunnel junctions were fabricated with tunnel barriers of thickness varied from sub-nm to ∼1 nm. The suitability of using an Al wetting layer for initiation of the ALD Al2O3 tunnel barrier was investigated with ellipsometry, atomic force microscopy, and electrical transport measurements. With optimized processing conditions, leak-free SIS tunnel junctions were obtained, demonstrating the viability of this integrated ALD-UHV sputtering system for the fabrication of tunnel junctions and devices comprised of metal-dielectric-metal multilayers

  13. Voltage-controlled magnetic anisotropy in Fe|MgO tunnel junctions studied by x-ray absorption spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Miwa, Shinji, E-mail: miwa@mp.es.osaka-u.ac.jp; Matsuda, Kensho; Tanaka, Kazuhito; Goto, Minori; Suzuki, Yoshishige [Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531 (Japan); Kotani, Yoshinori; Nakamura, Tetsuya [Japan Synchrotron Radiation Research Institute/SPring-8, Sayo, Hyogo 679-5198 (Japan)

    2015-10-19

    In this study, voltage-controlled magnetic anisotropy (VCMA) in Fe|MgO tunnel junctions was investigated via the magneto-optical Kerr effect, soft x-ray absorption spectroscopy, and magnetic circular dichroism spectroscopy. The Fe|MgO tunnel junctions showed enhanced perpendicular magnetic anisotropy under external negative voltage, which induced charge depletion at the Fe|MgO interface. Despite the application of voltages of opposite polarity, no trace of chemical reaction such as a redox reaction attributed to O{sup 2−} migration was detected in the x-ray absorption spectra of the Fe. The VCMA reported in the Fe|MgO-based magnetic tunnel junctions must therefore originate from phenomena associated with the purely electric effect, that is, surface electron doping and/or redistribution induced by an external electric field.

  14. Voltage-controlled magnetic anisotropy in Fe|MgO tunnel junctions studied by x-ray absorption spectroscopy

    International Nuclear Information System (INIS)

    In this study, voltage-controlled magnetic anisotropy (VCMA) in Fe|MgO tunnel junctions was investigated via the magneto-optical Kerr effect, soft x-ray absorption spectroscopy, and magnetic circular dichroism spectroscopy. The Fe|MgO tunnel junctions showed enhanced perpendicular magnetic anisotropy under external negative voltage, which induced charge depletion at the Fe|MgO interface. Despite the application of voltages of opposite polarity, no trace of chemical reaction such as a redox reaction attributed to O2− migration was detected in the x-ray absorption spectra of the Fe. The VCMA reported in the Fe|MgO-based magnetic tunnel junctions must therefore originate from phenomena associated with the purely electric effect, that is, surface electron doping and/or redistribution induced by an external electric field

  15. Electron tunneling through molecule-electrode contacts of single alkane molecular junctions: experimental determination and a practical barrier model.

    Science.gov (United States)

    Wang, Kun; Xu, Bingqian

    2016-04-14

    An advanced understanding of the molecule-electrode contact interfaces of single-molecule junctions is a necessity for real world application of future single-molecule devices. This study aims to elucidate the change in the contact tunnelling barrier induced by junction extension and how this change affects the resulting junction conductance. The contact barrier of Au-octanedithiol/octanediamine-Au junctions was studied under triangle (TRI) mechanical modulations using the modified scanning tunneling microscopy (STM) break junction technique. The experimental results reveal that as the junction separation extends, the contact barrier of octanedithiol follows a unique trend, a linear increase followed by a plateau in barrier height, which is in contrast to that of octanediamine, a nearly rectangle barrier. We propose a modified contact barrier model for the unique barrier shape of octanedithiol, based on which the calculation agrees well with the experimental data. This study shows unprecedented experimental features of the molecule-electrode contact barrier of single-molecule junctions and provides new insights into the nature of contact effect in determining electron transport through single-molecule junctions. PMID:26988278

  16. Development and application of super-conducting tunnel junctions for photon spectroscopy and radiation detection

    International Nuclear Information System (INIS)

    A radiation detector acting at low temperature has some capacities such as superior energy resolution, fine energy measurement, and so on. Superconductors are widely used for such low temperature detectors. Detectors using the superconductors contain micro-calorimeters using superconducting tunnel junction (STJ) and superconducting transition edge sensor. Both are detectors using superconducting thin film, and have capacity to be able to upgrade one to two column on energy resolution of the superconducting detectors. STJ is a detector to measure total amounts of quasi particle excited by energy brought into superconducting layer and can be operated at temperature less than about 1 K. And, the TES micro-calorimeter is a detector by using rapid change of electric resistance near transition temperature of a superconductor, and is used at temperature less than about 100 mK. Author has progressed some researches on element making technology, measuring technology and their application technologies under aiming at actual use of them for general detectors. Here were introduced on outlines of quantum detectors using present superconducting tunnel junction containing their acting principles, making technologies, basic researches for applications of STJ, heavy ion beam detector, and other researches such as sub-millimeter wave imaging element, signal processing circuit using SQUID amplifier, superconducting ADC and integration technology. (G.K.)

  17. Josephson Effects in superconducting conventional/unconventional tunnel junctions and weak-links

    International Nuclear Information System (INIS)

    The a.c. Josephson effect is perhaps the most striking manifestation of long-range phase coherence (broken gauge symmetry) in superconductors. Superconductivity in which gauge symmetry is broken in combination with one or more additional symmetries of the normal metallic state (unconventional superconductivity) may also occur. We discuss the Josephson effect for several models of an unconventional superconductor in contact with a conventional superconductor. An unconventional order parameter leads to qualitative changes in the current-phase relation which could be detected with a SQUID in which one arm of the interferometer is an unconventional superconductor. We also compare the current-phase relation for a tunnel junction with that of a weak-link connecting a conventional and unconventional superconductor. Selection rules for unconventional order parameters which enforce zero supercurrent in a tunnel junction are not relevant for weak-links connecting the same unconventional and conventional superconductor. We discuss the the a.c. Josephson effect for several popular models of unconventional superconductivity relevant to the CuO and heavy fermion superconductors. (orig.)

  18. Analysis of pulse shape from a high-resolution superconducting tunnel junction X-ray spectrometer

    International Nuclear Information System (INIS)

    Superconducting-insulating-superconducting (SIS) tunnel junctions coupled to superconducting absorbers may be used as high-resolution, high-efficiency X-ray spectrometers. Until recently, the X-ray-induced current pulse from such devices has been measured using FET-based negative-feedback charge or current amplifiers. The limited bandwidth and feed-back nature of these amplifiers have made it difficult to deduce the true shape of the X-ray induced current pulse. Recently, we have begun to use high-bandwidth amplifiers based on Superconducting Quantum Interference Devices (SQUIDS) to measure the current pulses from our tunnel junction X-ray spectrometers. We have measured pulses from devices with niobium X-ray absorbing layers coupled to aluminum layers that serve as quasiparticle traps. We present here a study of pulse shape as a function of bias voltage. In general, the X-ray induced pulses increase in amplitude and become longer as we increase the bias voltage. We found that it is possible to differentiate pulses produced by X-ray absorption in the top niobium film from those produced in the bottom niobium film by measuring the rise time of the current pulses. This allows us to produce a high resolution spectrum using only pulses produced in the bottom niobium film. The measured energy resolution of this spectrum is 29 eV FWHM at 5.89 keV, about 5 times better than that obtainable using semiconductor ionization detectors. (orig.)

  19. Noise performance of superconductive magnetometers based on long Josephson tunnel junctions

    Science.gov (United States)

    Granata, Carmine; Vettoliere, Antonio; Monaco, Roberto

    2014-09-01

    The low-current fluctuations at cryogenic temperatures together with the low dynamical resistance in the resonant states of Josephson tunnel junctions allow for the realization of superconducting oscillators up to the THz range with ultra-low spectral linewidth. By virtue of the Josephson frequency-voltage relationship, we show that the same properties can be exploited for the practical realization of magnetic flux-to-voltage transducers based on the flux-flow in long Josephson tunnel junctions whose intrinsic low-frequency voltage fluctuations at 4.2\\;K amount to few pV/H{{z}^{1/2}}, that is, too small to be measured by any present semiconductor electronics. Nevertheless, by using a double transformer SQUID amplifier we demonstrate that the (amplitude) voltage spectral density, S_{V}^{1/2}, of an all-niobium sensor does not exceed the level of 10\\;pV/H{{z}^{1/2}} and is not affected by 1/f excess noise at least down to few hertz. Such ultra-low white noise, corresponding to a magnetic field noise S_{B}^{1/2}\\leqslant 10\\;fT/H{{z}^{1/2}}, together with a highly linear and broadband voltage responsivity over a wide magnetic flux range, makes the flux-flow magnetometers potentially competitive with SQUID-based devices.

  20. Noise performance of superconductive magnetometers based on long Josephson tunnel junctions

    International Nuclear Information System (INIS)

    The low-current fluctuations at cryogenic temperatures together with the low dynamical resistance in the resonant states of Josephson tunnel junctions allow for the realization of superconducting oscillators up to the THz range with ultra-low spectral linewidth. By virtue of the Josephson frequency-voltage relationship, we show that the same properties can be exploited for the practical realization of magnetic flux-to-voltage transducers based on the flux–flow in long Josephson tunnel junctions whose intrinsic low-frequency voltage fluctuations at 4.2 K amount to few pV/Hz1/2, that is, too small to be measured by any present semiconductor electronics. Nevertheless, by using a double transformer SQUID amplifier we demonstrate that the (amplitude) voltage spectral density, SV1/2, of an all-niobium sensor does not exceed the level of 10 pV/Hz1/2 and is not affected by 1/f excess noise at least down to few hertz. Such ultra-low white noise, corresponding to a magnetic field noise SB1/2⩽10 fT/Hz1/2, together with a highly linear and broadband voltage responsivity over a wide magnetic flux range, makes the flux–flow magnetometers potentially competitive with SQUID-based devices. (paper)

  1. Superluminescence from an optically pumped molecular tunneling junction by injection of plasmon induced hot electrons

    Directory of Open Access Journals (Sweden)

    Kai Braun

    2015-05-01

    Full Text Available Here, we demonstrate a bias-driven superluminescent point light-source based on an optically pumped molecular junction (gold substrate/self-assembled molecular monolayer/gold tip of a scanning tunneling microscope, operating at ambient conditions and providing almost three orders of magnitude higher electron-to-photon conversion efficiency than electroluminescence induced by inelastic tunneling without optical pumping. A positive, steadily increasing bias voltage induces a step-like rise of the Stokes shifted optical signal emitted from the junction. This emission is strongly attenuated by reversing the applied bias voltage. At high bias voltage, the emission intensity depends non-linearly on the optical pump power. The enhanced emission can be modelled by rate equations taking into account hole injection from the tip (anode into the highest occupied orbital of the closest substrate-bound molecule (lower level and radiative recombination with an electron from above the Fermi level (upper level, hence feeding photons back by stimulated emission resonant with the gap mode. The system reflects many essential features of a superluminescent light emitting diode.

  2. Superluminescence from an optically pumped molecular tunneling junction by injection of plasmon induced hot electrons.

    Science.gov (United States)

    Braun, Kai; Wang, Xiao; Kern, Andreas M; Adler, Hilmar; Peisert, Heiko; Chassé, Thomas; Zhang, Dai; Meixner, Alfred J

    2015-01-01

    Here, we demonstrate a bias-driven superluminescent point light-source based on an optically pumped molecular junction (gold substrate/self-assembled molecular monolayer/gold tip) of a scanning tunneling microscope, operating at ambient conditions and providing almost three orders of magnitude higher electron-to-photon conversion efficiency than electroluminescence induced by inelastic tunneling without optical pumping. A positive, steadily increasing bias voltage induces a step-like rise of the Stokes shifted optical signal emitted from the junction. This emission is strongly attenuated by reversing the applied bias voltage. At high bias voltage, the emission intensity depends non-linearly on the optical pump power. The enhanced emission can be modelled by rate equations taking into account hole injection from the tip (anode) into the highest occupied orbital of the closest substrate-bound molecule (lower level) and radiative recombination with an electron from above the Fermi level (upper level), hence feeding photons back by stimulated emission resonant with the gap mode. The system reflects many essential features of a superluminescent light emitting diode. PMID:26171286

  3. Spin asymmetry calculations of the TMR-V curves in single and double-barrier magnetic tunnel junctions

    KAUST Repository

    Useinov, Arthur

    2011-10-01

    Spin-polarization asymmetry is the key parameter in asymmetric voltage behavior (AVB) of the tunnel magnetoresistance (TMR) in magnetic tunnel junctions. In this paper, we study the value of the TMR as a function of the applied voltage Va in the single as well as double barrier magnetic tunnel junctions (SMTJ & DMTJ, which are constructed from CoFeB/MgO interfaces) and numerically estimate the possible difference of the TMR-V a curves for negative and positive voltages in the homojunctions. As a result, we found that AVB may help to determine the exact values of Fermi wave vectors for minority and majority conducting spin sub-bands. Moreover, significant asymmetry of the experimental TMR-Va curves, which arises due to different annealing regimes, is explained by different heights of the tunnel barriers and values of the spin asymmetry. The numerical TMR-V a data are in good agreement with experimental ones. © 2011 IEEE.

  4. Defining the Value of Injection Current and Effective Electrical Contact Area for EGaIn-Based Molecular Tunneling Junctions

    OpenAIRE

    Simeone, Felice Carlo; Yoon, Hyo Jae; Thuo, Martin M.; Barber, Jabulani Randall; Smith, Barbara; Whitesides, George McClelland

    2013-01-01

    Analysis of rates of tunneling across self-assembled monolayers (SAMs) of n-alkanethiolates SCn (with n = number of carbon atoms) incorporated in junctions having structure AgTS-SAM//Ga2O3/EGaIn leads to a value for the injection tunnel current density J0 (i.e., the current flowing through an ideal junction with n = 0) of 103.6±0.3 A·cm–2 (V = +0.5 V). This estimation of J0 does not involve an extrapolation in length, because it was possible to measure current densities across SAMs over the r...

  5. Simulation of Inelastic Electron Tunnelling Spectroscopy on Different Contact Structures in 4,4'-Biphenyldithiol Molecular Junctions

    International Nuclear Information System (INIS)

    A first-principles computational method is developed to study the inelastic electron tunnelling spectroscopy (IETS) of 4,4'-biphenyldithiol molecular junction with three different contact structures between the molecule and electrodes in the nonresonant regime. The obtained distinct IETS can be used to resolve the geometrical structure of the molecular junction. The computational results demonstrate that the IETS has certain selection rule for vibrational modes, where the longitudinal modes with the same direction as the tunnelling current have greatest contribution to the IETS. The thermal effect on the IETS is also displayed

  6. Insulator interface effects in sputter‐deposited NbN/MgO/NbN (superconductor–insulator–superconductor) tunnel junctions

    OpenAIRE

    Thakoor, S.; Leduc, H. G.; Stern, J. A.; Thakoor, A. P.; Khanna, S K

    1987-01-01

    All refractory, NbN/MgO/NbN (superconductor–insulator–superconductor) tunnel junctions have been fabricated by in situ sputter deposition. The influence of MgO thickness (0.8–6.0 nm) deposited under different sputtering ambients at various deposition rates on current–voltage (I–V) characteristics of small‐area (30×30 μm) tunnel junctions is studied. The NbN/MgO/NbN trilayer is deposited in situ by dc reactive magnetron (NbN), and rf magnetron (MgO) sputtering, followed by thermal evaporation ...

  7. InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Krishnamoorthy, Sriram, E-mail: krishnamoorthy.13@osu.edu, E-mail: rajan@ece.osu.edu; Akyol, Fatih [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Rajan, Siddharth, E-mail: krishnamoorthy.13@osu.edu, E-mail: rajan@ece.osu.edu [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)

    2014-10-06

    InGaN/GaN tunnel junction contacts were grown using plasma assisted molecular beam epitaxy (MBE) on top of a metal-organic chemical vapor deposition (MOCVD)-grown InGaN/GaN blue (450 nm) light emitting diode. A voltage drop of 5.3 V at 100 mA, forward resistance of 2 × 10{sup −2} Ω cm{sup 2}, and a higher light output power compared to the reference light emitting diodes (LED) with semi-transparent p-contacts were measured in the tunnel junction LED (TJLED). A forward resistance of 5 × 10{sup −4} Ω cm{sup 2} was measured in a GaN PN junction with the identical tunnel junction contact as the TJLED, grown completely by MBE. The depletion region due to the impurities at the regrowth interface between the MBE tunnel junction and the MOCVD-grown LED was hence found to limit the forward resistance measured in the TJLED.

  8. InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes

    International Nuclear Information System (INIS)

    InGaN/GaN tunnel junction contacts were grown using plasma assisted molecular beam epitaxy (MBE) on top of a metal-organic chemical vapor deposition (MOCVD)-grown InGaN/GaN blue (450 nm) light emitting diode. A voltage drop of 5.3 V at 100 mA, forward resistance of 2 × 10−2 Ω cm2, and a higher light output power compared to the reference light emitting diodes (LED) with semi-transparent p-contacts were measured in the tunnel junction LED (TJLED). A forward resistance of 5 × 10−4 Ω cm2 was measured in a GaN PN junction with the identical tunnel junction contact as the TJLED, grown completely by MBE. The depletion region due to the impurities at the regrowth interface between the MBE tunnel junction and the MOCVD-grown LED was hence found to limit the forward resistance measured in the TJLED.

  9. Development of superconducting tunnel junction as photon counting detector in astronomy

    International Nuclear Information System (INIS)

    This work describes the development of S/Al-AlOx-Al/S Superconducting Tunnel Junctions (STJ) to count photons for astronomical applications in the near-infrared. The incoming light energy is converted into excited charges in a superconducting layer (S, either Nb or Ta) with a population proportional to the deposited energy. The photon energy can thus be evaluated by integrating the tunnel current induced in a voltage biased junction at a very low temperature (100 mK). The performance of STJ for light detection is discussed in the first chapter and compared with the best performances obtained with other techniques based on either superconductors. At the beginning of the thesis, a previous manufacturing process made it possible to obtain good quality Nb based junctions and preliminary results for photon counting. The objective of the thesis was to replace Nb as absorber with Ta, an intrinsically more sensitive material, and secondly to develop a new and more efficient manufacturing process. We first focused on the optimization of the Tantalum thin film quality. Structural analysis showed that these films can be grown epitaxially by magnetron sputtering onto an R-plane sapphire substrate heated to 600 Celsius degrees and covered by a thin Nb buffer layer. Electrical transport measurement from room to low temperatures gave excellent Relative Resistive Ratios of about 50 corresponding to mean free path of the order of 100 nm. Then, we conceived an original manufacturing process batch on 3 inch diameter sapphire substrate with five mask levels. These masks made it possible to produce single pixel STJ of different sizes (from 25*25 to 50*50 square microns) and shapes. We also produced multiple junctions onto a common absorber as well as 9-pixel arrays. Thanks to the development of this process we obtained a very large percentage of quality junctions (>90%) with excellent measured normal resistances of a few micro-ohm cm2 and low leakage currents of the order of one n

  10. Theory of charge transport in molecular junctions: From Coulomb blockade to coherent tunneling

    Energy Technology Data Exchange (ETDEWEB)

    Chang, Yao-Wen; Jin, Bih-Yaw, E-mail: byjin@ntu.edu.tw [Department of Chemistry and Center for Emerging Material and Advanced Devices and Center for Quantum Science and Engineering, National Taiwan University, Taipei 10617, Taiwan (China)

    2014-08-14

    We study charge transport through molecular junctions in the presence of electron-electron interaction using the nonequilibrium Green's function techniques and the renormalized perturbation theory. In the perturbation treatment, the zeroth-order Hamiltonian of the molecular junction is composed of independent single-impurity Anderson's models, which act as the channels where charges come through or occupy, and the interactions between different channels are treated as the perturbation. Using this scheme, the effects of molecule-lead, electron-electron, and hopping interactions are included nonperturbatively, and the charge transport processes can thus be studied in the intermediate parameter range from the Coulomb blockade to the coherent tunneling regimes. The concept of quasi-particles is introduced to describe the kinetic process of charge transport, and then the electric current can be studied and calculated. As a test study, the Hubbard model is used as the molecular Hamiltonian to simulate dimeric and trimeric molecular junctions. Various nonlinear current-voltage characteristics, including Coulomb blockade, negative differential resistance, rectification, and current hysteresis, are shown in the calculations, and the mechanisms are elucidated.

  11. What determines the sign reversal of magnetoresistance in a molecular tunnel junction?

    Science.gov (United States)

    Mandal, Subhasish; Pati, Ranjit

    2012-04-24

    The observations of both positive and negative signs in tunneling magnetoresistance (TMR) for the same organic spin-valve structure have baffled researchers working in organic spintronics. In this article, we provide an answer to this puzzle by exploring the role of metal-molecule interface on TMR in a single molecular spin-valve junction. A planar organic molecule sandwiched between two nickel electrodes is used to build a prototypical spin-valve junction. A parameter-free, single-particle Green's function approach in conjunction with a posteriori, spin-unrestricted density functional theory involving a hybrid orbital-dependent functional is used to calculate the spin-polarized current. The effect of external bias is explicitly included to investigate the spin-valve behavior. Our calculations show that only a small change in the interfacial distance at the metal-molecule junction can alter the sign of the TMR from a positive to a negative value. By changing the interfacial distance by 3%, the number of participating eigenchannels as well as their orbital characteristics changes for the antiparallel configuration, leading to the sign reversal in TMR. PMID:22409503

  12. Theory of charge transport in molecular junctions: From Coulomb blockade to coherent tunneling

    International Nuclear Information System (INIS)

    We study charge transport through molecular junctions in the presence of electron-electron interaction using the nonequilibrium Green's function techniques and the renormalized perturbation theory. In the perturbation treatment, the zeroth-order Hamiltonian of the molecular junction is composed of independent single-impurity Anderson's models, which act as the channels where charges come through or occupy, and the interactions between different channels are treated as the perturbation. Using this scheme, the effects of molecule-lead, electron-electron, and hopping interactions are included nonperturbatively, and the charge transport processes can thus be studied in the intermediate parameter range from the Coulomb blockade to the coherent tunneling regimes. The concept of quasi-particles is introduced to describe the kinetic process of charge transport, and then the electric current can be studied and calculated. As a test study, the Hubbard model is used as the molecular Hamiltonian to simulate dimeric and trimeric molecular junctions. Various nonlinear current-voltage characteristics, including Coulomb blockade, negative differential resistance, rectification, and current hysteresis, are shown in the calculations, and the mechanisms are elucidated

  13. Tunnelling junctions with additional degrees of freedom: An extended toolbox of scanning probe microscopy

    Science.gov (United States)

    Wagner, Christian; Temirov, Ruslan

    2015-05-01

    Considering studies of molecular adsorption we review recent developments in the field of scanning probe microscopy and in particular in scanning tunnelling microscopy, concentrating on the progress that has been achieved by controlled decoration of the microscope tip. A view is presented according to which the tip decoration generally introduces additional degrees of freedom into the scanning junction and thus extends its functionality. In particular tips decorated with atomic point-like particles may attain the additional function of a force sensor which is realized through the degrees of freedom associated with the relative position of the decorating probe-particle with respect to the tip. It is shown how the force sensor function of such tips helps when studying large molecular adsorbates. Further prospects of more complex junctions equipped with numerous internal degrees of freedom are discussed. It is argued that the main problem impeding the utilization of such junctions is related to their control. An approach towards a higher degree of control is presented that is based on the analysis of single molecule manipulation experiments.

  14. Electronic transport through EuO spin-filter tunnel junctions

    KAUST Repository

    Jutong, Nuttachai

    2012-11-12

    Epitaxial spin-filter tunnel junctions based on the ferromagnetic semiconductor europium monoxide (EuO) are investigated by means of density functional theory. In particular, we focus on the spin transport properties of Cu(100)/EuO(100)/Cu(100) junctions. The dependence of the transmission coefficient and the current-voltage curves on the interface spacing and EuO thickness is explained in terms of the EuO density of states and the complex band structure. Furthermore, we also discuss the relation between the spin transport properties and the Cu-EuO interface geometry. The level alignment of the junction is sensitively affected by the interface spacing, since this determines the charge transfer between EuO and the Cu electrodes. Our calculations indicate that EuO epitaxially grown on Cu can act as a perfect spin filter, with a spin polarization of the current close to 100%, and with both the Eu-5d conduction-band and the Eu-4f valence-band states contributing to the coherent transport. For epitaxial EuO on Cu, a symmetry filtering is observed, with the Δ1 states dominating the transmission. This leads to a transport gap larger than the fundamental EuO band gap. Importantly, the high spin polarization of the current is preserved up to large bias voltages.

  15. Dielectric characteristics of magnetic tunnel junctions using amorphous CoNbZr layers

    International Nuclear Information System (INIS)

    Magnetic tunnel junctions (MTJs) consisting of amorphous CoNbZr layers have been investigated and compared with traditional MTJs using Ta layers. The amorphous CoNbZr layer was employed as a buffer layer under the pinning layer IrMn in TiN/CoNbZr/IrMn/CoFe/Ru/CoFe for better uniformity of barrier. To investigate the dependence of the reliability of the MTJs on the bottom electrode, we carried out time-dependent dielectric breakdown (TDDB) measurements under constant voltage stress. The Weibull fit of our data clearly shows that tBD scales with the thickness uniformity of MTJ's tunnel barrier. Assuming a linear dependence of log(tBD) on stress voltages, we obtained a lifetime of 104 years at an operating voltage of 0.4 V for MTJs with CoNbZr layers. This study shows that the reliability of the new MTJ structure was improved due to the ultra smooth barrier because the surface roughness of the bottom electrode influenced the uniformity of the tunnel barrier.

  16. Dielectric characteristics of magnetic tunnel junctions using amorphous CoNbZr layers

    Energy Technology Data Exchange (ETDEWEB)

    Kim, H. S. [PaiChai University, Daejeon (Korea, Republic of); Sok, J. H. [University of Seoul, Seoul (Korea, Republic of); Cho, B. K. [KwangJu Institute of Science and Technology, Gwangju (Korea, Republic of); Rhee, J. R. [Sookmyung Women' s University, Seoul (Korea, Republic of); Park, W. J.; Kim, T. W. [Samsung Advanced Institute of Technology, Gyeonggi-Do (Korea, Republic of)

    2005-06-15

    Magnetic tunnel junctions (MTJs) consisting of amorphous CoNbZr layers have been investigated and compared with traditional MTJs using Ta layers. The amorphous CoNbZr layer was employed as a buffer layer under the pinning layer IrMn in TiN/CoNbZr/IrMn/CoFe/Ru/CoFe for better uniformity of barrier. To investigate the dependence of the reliability of the MTJs on the bottom electrode, we carried out time-dependent dielectric breakdown (TDDB) measurements under constant voltage stress. The Weibull fit of our data clearly shows that t{sub BD} scales with the thickness uniformity of MTJ's tunnel barrier. Assuming a linear dependence of log(t{sub BD}) on stress voltages, we obtained a lifetime of 10{sup 4} years at an operating voltage of 0.4 V for MTJs with CoNbZr layers. This study shows that the reliability of the new MTJ structure was improved due to the ultra smooth barrier because the surface roughness of the bottom electrode influenced the uniformity of the tunnel barrier.

  17. Polarity-tunable magnetic tunnel junctions based on ferromagnetism at oxide heterointerfaces

    Science.gov (United States)

    Ngo, Thach D. N.; Chang, Jung-Won; Lee, Kyujoon; Han, Seungju; Lee, Joon Sung; Kim, Young Heon; Jung, Myung-Hwa; Doh, Yong-Joo; Choi, Mahn-Soo; Song, Jonghyun; Kim, Jinhee

    2015-08-01

    Complex oxide systems have attracted considerable attention because of their fascinating properties, including the magnetic ordering at the conducting interface between two band insulators, such as LaAlO3 and SrTiO3. However, the manipulation of the spin degree of freedom at the LaAlO3/SrTiO3 heterointerface has remained elusive. Here, we have fabricated hybrid magnetic tunnel junctions consisting of Co and LaAlO3/SrTiO3 ferromagnets with the insertion of a Ti layer in between, which clearly exhibit magnetic switching and the tunnelling magnetoresistance effect below 10 K. The magnitude and sign of the tunnelling magnetoresistance are strongly dependent on the direction of the rotational magnetic field parallel to the LaAlO3/SrTiO3 plane, which is attributed to a strong Rashba-type spin-orbit coupling in the LaAlO3/SrTiO3 heterostructure. Our study provides a further support for the existence of the macroscopic ferromagnetism at LaAlO3/SrTiO3 heterointerfaces and opens a novel route to realize interfacial spintronics devices.

  18. A physics-based compact model of ferroelectric tunnel junction for memory and logic design

    International Nuclear Information System (INIS)

    Ferroelectric tunnel junction (FTJ) is able to store non-volatile data in the spontaneous polarization direction of ferroelectric tunnel barrier. Recent progress has demonstrated its great potential to build up the next generation non-volatile memory and logic (NVM and NVL) thanks to the high OFF/ON resistance ratio, fast operation speed, low write power, non-destructive readout and so on. In this paper, we present the first physics-based compact model for Co/BTO/LSMO FTJ nanopillar, which was reported experimentally to exhibit excellent NVM performance. This model integrates related physical models of tunnel resistance, static switching voltage and dynamic switching delay. Its accuracy is shown by the good agreement between numerical model simulation and experimental measurements. This compact model has been developed in Verilog-A language and validated by single-cell simulation on Cadence Virtuoso Platform. Hybrid simulations based on 40 nm-technology node of FTJ memory arrays and non-volatile full adder were performed to demonstrate the efficiency of our compact model for the simulation and analysis of CMOS/FTJ integrated circuits. (paper)

  19. Reduced master equation analysis of multiple-tunnel junction single-electron memory device

    Science.gov (United States)

    Jalil, M. B. A.; Wagner, M.

    2000-07-01

    We employ a master equation (ME) approach in the charge transport analysis across a uniform multiple-tunnel junction (MTJ) memory trap, using a much-reduced state list derived from circuit symmetry, and previous assumptions by Jensen and Martinis. This enables all significant single tunneling and higher-order cotunneling sequences to be accounted for, while avoiding the computational cost of the full ME method. The reduced ME method is conceptually simpler and yields greater accuracy, compared with previous approximations based on tunneling probabilities. For an MTJ trap with zero stray capacitance C0, the results obtained are found to agree very closely with the full ME results up to a temperature of T≈3T0/10, where T0=e2/kBC, whereas previous methods break down at T≈T0/10. Furthermore, unlike the earlier methods, the reduced ME approach can be applied to the realistic but less symmetric case of a trap with finite C0, and remains valid up to the trap's maximum operating temperature of T≈T0/100. Finally, our reduced ME results are in close agreement with available experimental data at T

  20. Hybrid Tunnel Junction-Graphene Transparent Conductive Electrodes for Nitride Lateral Light Emitting Diodes.

    Science.gov (United States)

    Wang, Liancheng; Cheng, Yan; Liu, Zhiqiang; Yi, Xiaoyan; Zhu, Hongwei; Wang, Guohong

    2016-01-20

    Graphene transparent conductive electrode (TCE) applications in nitride light emitting diodes (LEDs) are still limited by the large contact resistance and interface barrier between graphene and p-GaN. We propose a hybrid tunnel junction (TJ)-graphene TCE approach for nitride lateral LEDs theoretically and experimentally. Through simulation using commercial advanced physical models of semiconductor devices (APSYS), we found that low tunnel resistance can be achieved in the n(+)-GaN/u-InGaN/p(+)-GaN TJ, which has a lower tunneling barrier and an enhanced electric field due to the polarization effect. Graphene TCEs and hybrid graphene-TJ TCEs are then modeled. The designed hybrid TJ-graphene TCEs show sufficient current diffusion length (Ls), low introduced series resistance, and high transmittance. The assembled TJ LED with the triple-layer graphene (TLG) TCEs show comparable optoelectrical performance (3.99 V@20 mA, LOP = 10.8 mW) with the reference LED with ITO TCEs (3.36 V@20 mA, LOP = 12.6 mW). The experimental results further prove that the TJ-graphene structure can be successfully incorporated as TCEs for lateral nitride LEDs. PMID:26699194

  1. Preparation and characterization of a ferrimagnetic amorphous alloy of GdCo entering the design of magnetic tunnel junctions: ionizing radiations hardness of magnetic tunnel junctions

    International Nuclear Information System (INIS)

    The magnetic random access memories (MRAM) are on the way to supplant the other forms of random access memories using the states of electric charge, and this thanks to their many technical advantages: not-volatility, speed, low consumption power, robustness. Also, the MRAM are alleged insensitive with the ionizing radiations, which was not checked in experiments until now. The current architecture of the MRAM is based on the use of magnetic tunnel junctions (MTJ). These MRAM can present an important disadvantage, because they are likely of present errors of addressing, in particular when integration (density of memory cells) is increasingly thorough. The work undertaken during this thesis relates to these two points: - to check the functional reliability of the MRAM containing JTM exposed to high energy ionizing radiations; - to study a ferrimagnetic amorphous alloy, GdCo, likely to enter the composition of JTM and allowing to free from the possible errors of addressing by a process of thermal inhibition of the memory cells. This work of thesis showed that the MRAM containing JTM preserve their functional properties fully when they are subjected to intense ionizing radiations, and that GdCo is a very interesting material from the point of view of the solid state physics and magnetism, that its physical properties are very promising as for its applications, and that its integration in a JTM still claims technological developments. (author)

  2. Preparation and magnetotransport properties of MgO-barrier-based magnetic double tunnel junctions including nonmagnetic nanoparticles

    International Nuclear Information System (INIS)

    MgO-barrier-based magnetic double tunnel junctions including Au or Cr nanoparticles were prepared by molecular beam epitaxy, and their magnetotransport properties were investigated. A double junction sample including Au nanoparticles showed the Coulomb blockade effect and clear magnetoresistive hysteresis loops. The observed bias voltage dependence of the resistance and magnetoresistance (MR) suggested that the MR effects of 1-2% at high bias voltages were caused by spin accumulation in the Au nanoparticles. In the case of Cr nanoparticles, a double junction with relatively low sample resistance was obtained, showing a clear Coulomb threshold

  3. Phase diagrams of MgO magnetic tunnel junctions including the perpendicular spin-transfer torque in different geometries

    Science.gov (United States)

    Bernert, K.; Sluka, V.; Fowley, C.; Lindner, J.; Fassbender, J.; Deac, A. M.

    2014-04-01

    We calculate the switching voltages for MgO-based magnetic tunnel junctions taking into account both the in-plane and the fieldlike spin-torque terms. To this end, we analytically solve the Landau-Lifshitz-Gilbert equation for a generalized geometry. We assume that the in-plane spin-torque varies linearly with the applied voltage, while the fieldlike torque exhibits a quadratic voltage dependence. Specifically, we consider that the free layer has two generic, orthogonal anisotropy components, one of which is along the direction defined by the magnetization of the reference layer, which also serves as a polarizer. The resulting formalism is applied to three different, experimentally relevant geometries: tunnel junctions with both the free and the reference layers magnetized in the plane of the layers, junctions with fully perpendicular anisotropy, and perpendicular junctions with an additional in-plane easy axis, respectively. We find that for in-plane devices, the quadratic dependence of the fieldlike torque on the applied voltage can lead to back hopping, which remains possible if we insert an additional linear term for the bias dependence of the fieldlike spin-torque comparable to current experimental results. For perpendicular anisotropy junctions neither back hopping nor spin-transfer-driven steady-state precession are expected. An additional in-plane shape anisotropy component stabilizes canted states in tunnel junctions with perpendicular anisotropy for specific values of voltage and field. The results are consistent with numerical integration of the Landau-Lifshitz-Gilbert equation and in good agreement with recent experiments involving perpendicular magnetic anisotropy magnetic tunnel junctions.

  4. Spin tunneling magnetoresistance in NiFe/Al{sub 2}O{sub 3}/Co junctions with reduced dimensions formed using photolithography

    Energy Technology Data Exchange (ETDEWEB)

    Kumagai, S. [Tohoku Univ., Sendai (Japan). Dept. of Applied Physics; Yaoi, T. [Sony Corp., Yokohama (Japan). Research Center; Miyazaki, T. [Tohoku Univ., Sendai (Japan). Dept. of Applied Physics

    1997-02-01

    The spin tunneling magnetoresistive effect has been investigated for NiFe/Al{sub 2}O{sub 3}/Co junctions with a small junction area down to 3.5 x 3.5 {mu}m{sup 2} fabricated using photolithography. About 75 of the prepared junctions exhibit the spin tunneling magnetoresistive effect, the maximum value being around 1 at room temperature. Negative interlayer exchange coupling (J<0) is found in these junctions. The strength of the coupling tends to increase with decreasing junction area. (orig.).

  5. Metalloprotein tunnel junctions: compressional modulation of barrier height and transport mechanism.

    Science.gov (United States)

    Davis, Jason J; Wang, Nan; Morgan, Ashley; Zhang, Tiantian; Zhao, Jianwei

    2006-01-01

    Though the incorporation of sensory or potentially-switchable biological entities into electronic devices brings with it a number of complicating issues associated with hydration, structural complexity/delicacy, and low conductance, the possibility of resolving properties of fundamental importance (such as the influence of protein fold on conductance) at a molecularly-resolved level, are exciting. Our ability to analyse charge transport through a biological macromolecule remains, though, a significant practical and theoretical challenge. Though much information can be gained by carrying out such examinations at a molecular level, there exist few methods where such controlled analyses are, in fact, feasible. Here we report on the electron transport characteristics of a blue copper metalloprotein as characterized by conductive-probe atomic force microscopy. At very low imposed force, contact resistance is high, electrical contact unstable, and the junction undergoes dielectric breakdown at 1.1-1.5 GV m(-1). At increased applied force, the current-voltage characteristics are entirely reproducible and well-described by a Simmons (non-resonant) tunnelling model. Though highly resistive, observations demonstrate the ability of the protein matrix to mediate appreciable tunnelling current. Non-resonant behaviour is consistent with observations of bias-independent tunnelling imaging. In fitting observed transport characteristics to this model, it is possible to deconvolute barrier height and length at specific experimental conditions and, specifically, to monitor the modulation of these parameters by imposed compressional force. At higher field spectroscopic features assignable to metal based density of states are reproducibly observed. These vanish in a force regime where the tunnel barrier to direct tip-sample communication decreases. PMID:16512371

  6. Exponential size-dependent tunability of strain on the transport behavior in ZnO tunnel junctions: an ab initio study.

    Science.gov (United States)

    Zhu, Jia; Chen, W J; Zhang, G H; Zheng, Yue

    2015-10-14

    It is an interesting issue if the transport behavior of a piezoelectric tunnel junction is sensitive to external strain or stress, and it implies a prospect for developing novel mechanical sensors, transducers, piezotronic devices, etc. Many studies paid attention to this issue, yet how the strain and stress tunable transport behavior of a tunnel junction depends on the barrier thickness is still rarely known. Using the first principles calculations, we investigate the size-dependent and strain-tunable transport behavior in the tunnel junctions. It was confirmed that external strain has strong control over the transport properties of ZnO tunnel junctions, with several times amplification of tunnel conductance obtained by strain reversal. More importantly, the conductance amplification by strain reversal exponentially changes with the barrier thickness, indicating the size-dependent strain tunability of the transport behavior. The electrostatic quantities (i.e., built-in field, depolarization field, polarization, interfacial dipoles and potential barrier) and the transport properties of tunnel junctions were comprehensively analyzed to reveal the relationships between these quantities and their size dependence. The exponential size-dependence of strain tunable transport behavior in ZnO tunnel junctions is attributed to the linear change in the potential barrier with the barrier thickness. Our simulations provide an insight of how to maximize the strain tunability of transport behavior of piezoelectric tunnel junctions by thickness design and strain engineering. PMID:26371467

  7. Phase locked 270-440 GHz local oscillator based on flux flow in long Josephson tunnel junctions

    DEFF Research Database (Denmark)

    Koshelets, V.P.; Shitov, S.V.; Filippenko, L.V.; Vaks, V.L.; Mygind, Jesper; Baryshev, A.B.; Luinge, W.; Whyborn, N.

    2000-01-01

    -running tunnel junction. The results of residual FFO phase noise measurements are also presented. Finally, we propose a single-chip fully superconductive receiver with two superconductor–insulator–superconductor mixers and an integrated phase-locked loop. ©2000 American Institute of Physics....

  8. On a semiconductor laser with a p–n tunnel junction with radiation emission through the substrate

    Energy Technology Data Exchange (ETDEWEB)

    Kolpakov, D. A., E-mail: kolpdm@gmail.com; Zvonkov, B. N.; Nekorkin, S. M.; Dikareva, N. V. [Lobachevsky State University of Nizhny Novgorod, Physical-Technical Research Institute (Russian Federation); Aleshkin, V. Ya.; Dubinov, A. A. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

    2015-11-15

    A multiwell interband cascade laser with a tunnel junction within a single waveguide and radiation emission through the substrate is implemented for the first time. It is shown that such a laser heterostructure design provides the more efficient population of quantum wells in comparison with a conventional multiwell laser with radiation emission through the substrate, due to which the lasing threshold is significantly lowered.

  9. Structural defects analysis versus spin polarized tunneling in Co2FeAl/MgO/CoFe magnetic tunnel junctions with thick MgO barriers

    International Nuclear Information System (INIS)

    We report on spin polarization reduction by incoherent tunneling in single crystal Co2FeAl/MgO/Co50Fe50 magnetic tunnel junctions (MTJs). A large density of misfit dislocations in the Heusler based MTJs has been provided by a thick MgO barrier and its 3.8% lattice mismatch with the Co2FeAl electrode. Our analysis implicates a correlated structural-transport approach. The crystallographic coherence in the real space has been investigated by High Resolution Transmission Electron Microscopy phase analysis. The electronic transport experiments in variable temperature, fitted with a theoretical extended-Glazman–Matveev model, address different levels of the tunneling mechanisms from direct to multi-center hopping. We demonstrate a double impact of dislocations, as extended defects, on the tunneling polarization. Firstly, the breaking of the crystal symmetry destroys the longitudinal and lateral coherence of the propagating Bloch functions. This affects the symmetry filtering efficiency of the Δ1 states across the (001) MgO barriers and reduces the associated effective tunneling polarization. Secondly, dislocations provide localized states within the MgO gap. This determines temperature activated spin-conserving inelastic tunneling through chains of defects which are responsible for the one order of magnitude drop of the tunnel magnetoresistance from low to room temperature. - Highlights: • The paper focuses on tunneling transport in realistic single crystal magnetic tunnel junctions involving the full Heusler alloy Co2FeAl. • Via correlated structural-transport analysis approach, the paper demonstrates the role of extended structural defects in a single crystal epitaxial barrier on the tunneling polarization efficiency. • We illustrate the effect of the crystal symmetry breaking on the spin and symmetry polarized tunneling transport. • The transport results are confronted with a theoretical model considering different orders of tunneling mechanisms, from

  10. Effect of interfacial structures on spin dependent tunneling in epitaxial L10-FePt/MgO/FePt perpendicular magnetic tunnel junctions

    International Nuclear Information System (INIS)

    Epitaxial FePt(001)/MgO/FePt magnetic tunnel junctions with L10-FePt electrodes showing perpendicular magnetic anisotropy were fabricated by molecular beam epitaxial growth. Tunnel magnetoresistance ratios of 21% and 53% were obtained at 300 K and 10 K, respectively. Our previous work, based on transmission electron microscopy, confirmed a semi-coherent interfacial structure with atomic steps (Kohn et al., APL 102, 062403 (2013)). Here, we show by x-ray photoemission spectroscopy and first-principles calculation that the bottom FePt/MgO interface is either Pt-terminated for regular growth or when an Fe layer is inserted at the interface, it is chemically bonded to O. Both these structures have a dominant role in spin dependent tunneling across the MgO barrier resulting in a decrease of the tunneling magnetoresistance ratio compared with previous predictions

  11. Effect of interfacial structures on spin dependent tunneling in epitaxial L1{sub 0}-FePt/MgO/FePt perpendicular magnetic tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Yang, G.; Li, D. L.; Wang, S. G., E-mail: Sgwang@iphy.ac.cn; Ma, Q. L.; Liang, S. H.; Wei, H. X.; Han, X. F. [State Key Laboratory of Magnetism, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Hesjedal, T.; Ward, R. C. C. [Clarendon Laboratory, Department of Physics, University of Oxford, Oxford OX1 3PU (United Kingdom); Kohn, A.; Elkayam, A.; Tal, N. [Department of Materials Engineering and the Ilse Katz Institute for Nanoscale Science and Technology, Ben-Gurion University of the Negev, Beer-Sheva 84105 (Israel); Zhang, X.-G. [Department of Physics and Quantum Theory Project, University of Florida, Gainesville, Florida 32611 (United States); Center for Nanophase Materials Sciences and Computer Science and Mathematics Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6493 (United States)

    2015-02-28

    Epitaxial FePt(001)/MgO/FePt magnetic tunnel junctions with L1{sub 0}-FePt electrodes showing perpendicular magnetic anisotropy were fabricated by molecular beam epitaxial growth. Tunnel magnetoresistance ratios of 21% and 53% were obtained at 300 K and 10 K, respectively. Our previous work, based on transmission electron microscopy, confirmed a semi-coherent interfacial structure with atomic steps (Kohn et al., APL 102, 062403 (2013)). Here, we show by x-ray photoemission spectroscopy and first-principles calculation that the bottom FePt/MgO interface is either Pt-terminated for regular growth or when an Fe layer is inserted at the interface, it is chemically bonded to O. Both these structures have a dominant role in spin dependent tunneling across the MgO barrier resulting in a decrease of the tunneling magnetoresistance ratio compared with previous predictions.

  12. Ferroelectric control of spin-transfer torque in multiferroic tunnel junctions

    Science.gov (United States)

    Useinov, Artur; Kalitsov, Alan; Velev, Julian; Kioussis, Nicholas

    2015-03-01

    Based on model calculations we predict electric-field control of the spin-transfer torque (STT) in magnetic tunnel junctions with ferroelectric barriers. We demonstrate that the bias dependence of the in-plane T∥ and out-of-plane T⊥ components of the STT can be dramatically modified by the ferroelectric polarization. In particular, the magnitude of the STT can be enhanced or suppressed by switching the polarization direction and in some cases the sign of STT can be toggled. The underlying mechanism is the combination of polarization-induced symmetry breaking and the interplay of the bias-induced and polarization-induced spin-dependent screening giving rise to a rich behavior of the electrostatic potential energy profile. These properties could lead to enhanced switching efficiency in STT-based devices and open a new avenue for applications of multiferroic devices.

  13. Modulation of spin transfer torque amplitude in double barrier magnetic tunnel junctions

    International Nuclear Information System (INIS)

    Magnetization switching induced by spin transfer torque is used to write magnetic memories (Magnetic Random Access Memory, MRAM) but can be detrimental to the reading process. It would be quite convenient therefore to modulate the efficiency of spin transfer torque. A solution is adding an extra degree of freedom by using double barrier magnetic tunnel junctions with two spin-polarizers, with controllable relative magnetic alignment. We demonstrate, for these structures, that the amplitude of in-plane spin transfer torque on the middle free layer can be efficiently tuned via the magnetic configuration of the electrodes. Using the proposed design could thus pave the way towards more reliable read/write schemes for MRAM. Moreover, our results suggest an intriguing effect associated with the out-of-plane (field-like) spin transfer torque, which has to be further investigated

  14. Modulation of spin transfer torque amplitude in double barrier magnetic tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Clément, P.-Y.; Baraduc, C., E-mail: claire.baraduc@cea.fr; Chshiev, M.; Diény, B. [Univ. Grenoble Alpes, INAC-SPINTEC, F-38000 Grenoble (France); CNRS, INAC-SPINTEC, F-38000 Grenoble (France); CEA, INAC-SPINTEC, F-38000 Grenoble (France); Ducruet, C. [Crocus-Technology, 5, Place Robert Schuman, F-38054 Grenoble (France); Vila, L. [Univ. Grenoble Alpes, INAC-SP2M, F-38000 Grenoble, France and CEA, INAC-SP2M, F-38000 Grenoble (France)

    2015-09-07

    Magnetization switching induced by spin transfer torque is used to write magnetic memories (Magnetic Random Access Memory, MRAM) but can be detrimental to the reading process. It would be quite convenient therefore to modulate the efficiency of spin transfer torque. A solution is adding an extra degree of freedom by using double barrier magnetic tunnel junctions with two spin-polarizers, with controllable relative magnetic alignment. We demonstrate, for these structures, that the amplitude of in-plane spin transfer torque on the middle free layer can be efficiently tuned via the magnetic configuration of the electrodes. Using the proposed design could thus pave the way towards more reliable read/write schemes for MRAM. Moreover, our results suggest an intriguing effect associated with the out-of-plane (field-like) spin transfer torque, which has to be further investigated.

  15. Origins of large light induced voltage in magnetic tunnel junctions grown on semiconductor substrates

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Y.; Lin, W.; Petit-Watelot, S.; Hehn, M.; Rinnert, H.; Lu, Y.; Montaigne, F.; Lacour, D.; Andrieu, S.; Mangin, S., E-mail: stephane.mangin@univ-lorraine.fr [Institut Jean Lamour, UMR CNRS 7198, Université de Lorraine- BP 70239, F-54506 Vandoeuvre-lès-Nancy Cedex (France)

    2016-01-14

    Recently, the study of interactions between electron spins and heat currents has given rise to the field of “Spin Caloritronics”. Experimental studies of these interactions have shown a possibility to combine the use of heat and light to power magnetic tunnel junction (MTJ) devices. Here we present a careful study of an MTJ device on Si substrate that can be powered entirely by light. We analyze the influence of the material properties, device geometry, and laser characteristics on the electric response of the sample. We demonstrate that by engineering the MTJ and its electrical contact, a large photovoltage reaching 100 mV can be generated. This voltage originates from the Si substrate and depends on the MTJ magnetic configuration. Finally, we discuss the origin of the photo-voltage in terms of Seebeck and photovoltaic effects.

  16. Detection of HIV-1 antigen based on magnetic tunnel junction sensor and magnetic nanoparticles

    CERN Document Server

    Li, L; Zhou, Y; Pong, P W T

    2016-01-01

    In recent years, it is evidenced that the individuals newly infected HIV are transmitting the virus prior to knowing their HIV status. Identifying individuals that are early in infection with HIV antibody negative (window period) remains problematic. In the newly infected individuals, HIV antigen p24 is usually present in their serum or plasma 7-10 days before the HIV antibody. After antibody production initiates, the p24 antigen is bound into immune complexes. That means the detectable p24 antigens in serum/plasma are short-lived, and their amount is in the pg/ml range. Thus, a rapid quantitative bio-detection system with high-sensitivity is required to achieve early disease diagnosis. Magnetoresistive (MR) biosensor with ultra-high sensitivity possesses great potential in this area. In this study, a p24 detection assay using MgO-based magnetic tunnel junction (MTJ) sensor and 20-nm magnetic nanoparticles is reported.

  17. Leak current estimated from the shot noise in magnetic tunneling junctions

    Science.gov (United States)

    Tanaka, Takahiro; Arakawa, Tomonori; Maeda, Masahiro; Kobayashi, Kensuke; Nishihara, Yoshitaka; Ono, Teruo; Nozaki, Takayuki; Fukushima, Akio; Yuasa, Shinji

    2014-07-01

    We performed the shot noise measurement in epitaxial Fe/MgO/Fe-based magnetic tunneling junctions (MTJs) with various MgO thicknesses between 1.1 nm and 1.625 nm. While the Fano factor to characterize the shot noise is very close to 1 in MTJs with MgO barrier thicker than 1.2 nm, the magnetic configuration-dependent reduction of the Fano factor for MTJs with thin MgO barrier was observed, which is mainly due to the existence of leakage current. By using a simple parallel circuit model, we demonstrated that the contribution of the leak current can be sensitively derived from the shot noise.

  18. Infrared spectroscopic characterization of [2]rotaxane molecular switch tunnel junction devices.

    Science.gov (United States)

    DeIonno, Erica; Tseng, Hsian-Rong; Harvey, Desmond D; Stoddart, J Fraser; Heath, James R

    2006-04-20

    Langmuir-Blodgett monolayers of a bistable [2]rotaxane were prepared at packing densities of 118, 73, and 54 A(2)/molecule. The monolayers were both characterized via infrared spectroscopy before and after evaporation of a 2 nm film of titanium and incorporated into molecular switch tunnel junction devices. The study suggests that the evaporation process primarily affects portions of the molecule exposed to the metal atom source. Thus, in tightly packed monolayers (73 and 54 A(2)/molecule), only the portions of the [2]rotaxane that are present at the molecule/air interface are clearly affected, leaving key functionality necessary for switching intact. Monolayers transferred at a lower pressure (118 A(2)/molecule) exhibit nonspecific damage and poor switching behavior following Ti deposition. These results indicate that tightly packed monolayers and sacrificial functionality displayed at the molecule/air interface are important design principles for molecular electronic devices. PMID:16610848

  19. Relaxation phenomena in current-induced switching in thin magnetic tunnel junctions

    International Nuclear Information System (INIS)

    Recently, reversible resistance (R) changes were observed in thin tunnel junctions (TJ) when a critical electrical current was applied. These changes are called current-induced switching (CIS) and are attributed to electromigration in nanoconstrictions in the insulating barrier. Here, we study the CIS effect on a thin TJ prepared by IBD, displaying a 3.4% R change when a CIS cycle is performed at room temperature. After complete (or half) CIS cycles with adequate maximum currents, we monitored R as a function of time. In both cases a non-monotonic relaxation occurs with two distinct relaxation times, τ1∼10min, τ2∼102min. First R increases (decreases) rapidly, but then a slow relaxation dominates, reducing (increasing) R. These opposite relaxation processes suggest two independent physical mechanisms acting simultaneously inside the TJ. The physical origin of these effects is discussed

  20. Three-terminal magnetic tunneling junction device with perpendicular anisotropy CoFeB sensing layer

    International Nuclear Information System (INIS)

    We demonstrated read and write characteristics of a three terminal memory device with a perpendicular anisotropy-free layer of a strip of [Co/Ni] and a low-switching perpendicular-anisotropy CoFeB/MgO sensing layer. This new design of the cell results in a small cell area. The switching magnetic field of the sensing layer can be decreased by changing sputtering gas for the Ta-cap from Ar to Kr. An electron energy-loss spectroscopy analysis of the cross-section of the magnetic tunneling junction (MTJ) revealed that the boron content in CoFeB with a Kr-sputtered Ta-cap was smaller than that with an Ar-sputtered one. A change in resistance for the MTJ was observed that corresponded to the magnetic switching of the Co/Ni wire and its magnetoresistance ratio and critical current were 90% and 0.8 mA, respectively

  1. A novel architecture of non-volatile magnetic arithmetic logic unit using magnetic tunnel junctions

    International Nuclear Information System (INIS)

    Complementary metal–oxide–semiconductor (CMOS) technology is facing increasingly difficult obstacles such as power consumption and interconnection delay. Novel hybrid technologies and architectures are being investigated with the aim to circumvent some of these limits. In particular, hybrid CMOS/magnetic technology based on magnetic tunnel junctions (MTJs) is considered as a very promising approach thanks to the full compatibility of MTJs with CMOS technology. By tightly merging the conventional electronics with magnetism, both logic and memory functions can be implemented in the same device. As a result, non-volatility is directly brought into logic circuits, yielding significant improvement of device performances and new functionalities as well. We have conceived an innovative methodology to construct non-volatile magnetic arithmetic logic units (MALUs) combining spin-transfer torque MTJs with MOS transistors. The present 4-bit MALU utilizes 4 MTJ pairs to store its operation code (opcode). Its operations and performances have been confirmed and evaluated through electrical simulations. (paper)

  2. Effect of the subgap conductance on the metastable states in a Josephson tunnel junction

    International Nuclear Information System (INIS)

    An investigation of the decay rate of metastable states in Josephson tunnel junctions in presence of thermal noise is presented. We have observed that, in the extremely underdamped regime, there is an exponential temperature dependence of the best fit value for the shunt conductance. Such a dependence shows a close relation with the temperature dependence of the subgap conductance, suggesting that the effective conductance for the escape from the metastable states obeys to a quasi-particle thermal activation mechanism. The introduction of this effective conductance into the lifetime expression for the zero-voltage states leads to significant changes in the width of the switching current distributions. A comparisons of the experimental data with the proposed model is reported. 7 refs., 2 figs

  3. Short-Term Plasticity and Long-Term Potentiation in Magnetic Tunnel Junctions: Towards Volatile Synapses

    Science.gov (United States)

    Sengupta, Abhronil; Roy, Kaushik

    2016-02-01

    Synaptic memory is considered to be the main element responsible for learning and cognition in humans. Although traditionally nonvolatile long-term plasticity changes are implemented in nanoelectronic synapses for neuromorphic applications, recent studies in neuroscience reveal that biological synapses undergo metastable volatile strengthening followed by a long-term strengthening provided that the frequency of the input stimulus is sufficiently high. Such "memory strengthening" and "memory decay" functionalities can potentially lead to adaptive neuromorphic architectures. In this paper, we demonstrate the close resemblance of the magnetization dynamics of a magnetic tunnel junction (MTJ) to short-term plasticity and long-term potentiation observed in biological synapses. We illustrate that, in addition to the magnitude and duration of the input stimulus, the frequency of the stimulus plays a critical role in determining long-term potentiation of the MTJ. Such MTJ synaptic memory arrays can be utilized to create compact, ultrafast, and low-power intelligent neural systems.

  4. Modification of Layer Structures of Superconducting Tunnel Junctions to Improve X-ray Energy Resolution

    Science.gov (United States)

    Ukibe, Masahiro; Fujii, Go; Shiki, Shigetomo; Kitajima, Yoshinori; Ohkubo, Masataka

    2016-07-01

    The layer structure of a Nb/Al-based superconducting tunnel junction (STJ) X-ray detector was modified to improve the energy resolution (Δ E) of STJ X-ray detectors by suppressing the recombination of excited quasiparticles in the electrodes. A 100-pixel array of 100 × 100 \\upmu m STJs with a symmetric layer structure of Nb (300 nm)/Al-AlOx(70 nm)/Al (70 nm)/Nb (300 nm) was fabricated. Fabrication yields of the 100 pixels were more than 90 %. The average leak current of the STJ array was 8 nA. The mean Δ E of the STJ array was 6.7 ± 1.0 eV for 400 eV X-rays. This Δ E is the best value reported for Nb/Al STJs.

  5. Atomic nitrogen source for the formation of aluminum nitride tunnel barrier SIS junctions

    International Nuclear Information System (INIS)

    A 2.45 GHz electron-cyclotron-resonance plasma source has been adopted to form AlN barriers of Nb/Al-AlN/Nb SIS junctions. Good quality AlN barriers with tunnel resistivities as small as 7 Ωμm2 have been realized. The optical emission spectrum of the nitrogen plasma has been investigated in order to evaluate the dissociation rate of N2. AlN barriers with less leakage current were formed when the relative intensity of the emission lines of atomic N was stronger. Nitridation by atomic N could be beneficial in the formation of low resistivity, low leakage current AlN barriers.

  6. Origins of large light induced voltage in magnetic tunnel junctions grown on semiconductor substrates

    International Nuclear Information System (INIS)

    Recently, the study of interactions between electron spins and heat currents has given rise to the field of “Spin Caloritronics”. Experimental studies of these interactions have shown a possibility to combine the use of heat and light to power magnetic tunnel junction (MTJ) devices. Here we present a careful study of an MTJ device on Si substrate that can be powered entirely by light. We analyze the influence of the material properties, device geometry, and laser characteristics on the electric response of the sample. We demonstrate that by engineering the MTJ and its electrical contact, a large photovoltage reaching 100 mV can be generated. This voltage originates from the Si substrate and depends on the MTJ magnetic configuration. Finally, we discuss the origin of the photo-voltage in terms of Seebeck and photovoltaic effects

  7. Size dependence of magnetization reversal of ring shaped magnetic tunnel junction

    International Nuclear Information System (INIS)

    The size dependence of magnetization reversal of magnetic tunnel junction (MTJ) rings has been investigated. The MTJ rings, with outer diameter of 4, 2 and 1 μm and inner diameter of 1.5, 1 and 0.5 μm were fabricated by a top-down technique. The magnetoresistance curves manifest all of the magnetic domain configurations during magnetization reversal in different sized rings. Various transition processes were observed, such as four transition, three transition and two transition in the largest, middle and smallest MTJ ring, respectively. Furthermore, the biasing fields observed from major loops decrease with decreasing size, which may result from edge roughness produced in the ion-milling process

  8. Multispectral/fluorescence CT using superconducting tunnel junction detector for 3-D material analysis

    International Nuclear Information System (INIS)

    We have developed superconducting tunnel junctions (STJs) for applications to astrophysics, particle physics, material physics, etc. The spectrum capability of STJs is the wide wavelength/energy range from visible light to X-ray. STJs are applicable to photon detectors with good energy resolution and a high photon-counting rate. STJs also have good efficiency because of their high absorption efficiency below 1 keV photon energy. This is advantageous in low photon emission observation like fluorescence from objects. STJs have potentials to open new windows of the Multispectral/fluorescence computed tomography (CT) below 1 keV photon energy. As first step, we are starting STJ-CT experiments from the high-energy X-ray region (6-20 keV). We report and discuss the CT using STJs

  9. Terahertz direct-detection behavior of niobium nitride superconducting tunnel junctions above liquid helium temperature

    International Nuclear Information System (INIS)

    Niobium nitride (NbN) superconducting tunnel junctions (STJs) have an energy gap nearly double that of niobium STJs, making them potential sensitive detectors that operate at higher frequencies and temperatures. In this paper, we investigate the direct-detection behavior (i.e. the spectral response, current responsivity, noise characteristics, and noise equivalent power (NEP)) of a 500 GHz NbN STJ detector at temperatures from approximately 5 to 9 K. The detector shows an uncorrected NEP of 3.8 × 10−13 W/√(Hz) around 5 K and 1.5 × 10−12 W/√(Hz) at 9 K. Its performance can be further improved by adopting a cryogenically cooled readout circuit and fabricating the device with a wiring layer of higher critical-transition temperatures. (papers)

  10. Interfacial spin-orbit splitting and current-driven spin torque in anisotropic tunnel junctions

    KAUST Repository

    Manchon, Aurelien

    2011-05-17

    Spin transport in magnetic tunnel junctions comprising a single magnetic layer in the presence of interfacial spin-orbit interaction (SOI) is investigated theoretically. Due to the presence of interfacial SOI, a current-driven spin torque can be generated at the second order in SOI, even in the absence of an external spin polarizer. This torque possesses two components, one in plane and one perpendicular to the plane of rotation, that can induce either current-driven magnetization switching from an in-plane to out-of-plane configuration or magnetization precessions, similar to spin transfer torque in spin valves. Consequently, it appears that it is possible to control the magnetization steady state and dynamics by either varying the bias voltage or electrically modifying the SOI at the interface.

  11. Contribution of the metal/SiO2 interface potential to photoinduced switching in molecular single-electron tunneling junctions

    International Nuclear Information System (INIS)

    Photoinduced switching of the Coulomb staircase in molecular single-electron tunneling junctions was previously observed. These junctions consisted of evaporated SiO2 insulator (∼5 nm), with tetrakis-3,5-di-t-butylphenyl-porphyrin (H2-TBPP) molecules as Coulomb islands, sandwiched between top and bottom electrodes. The reversible response and the relaxation time of the photoinduced switching suggest that this phenomenon depends on the properties of the metal/SiO2 interface rather than those of the H2-TBPP molecule or SiO2 tunneling layer. We analyzed the photoinduced switching according to the theory of single-electron tunneling taking into account the discrete molecular energy states and the metal/SiO2 interfacial electrostatic phenomena. We conclude that the main contributor to the photoinduced shift was the electrostatic potential formed through the space-charge exchange at the metal/SiO2 interface

  12. Thermo-electric charge-to-voltage converter with superconductor-insulator-normal tunnel junction for bolometer applications

    International Nuclear Information System (INIS)

    A novel type of the zero-biased thermo-electric bolometer (TEB) is proposed. The bolometer is based on a charge-to-voltage converter (CVC) with a superconductor-insulator-normal (SIN) tunnel junction and a superconducting absorber. The absorption of photons in the absorber leads to excitation of quasiparticles with some fraction of charge imbalance, tunneling through the SIN junction in zero-biased mode and generation of voltage. The thermoelectric voltage is determined by accumulation of tunneling charge in an external capacitance. Conversion efficiency is very high and voltage values comparable with a superconducting gap are easily achieved. The zero-biased CVC-TEB can be effectively used for creation of an array of bolometers and multi-pixel detection systems.

  13. Use of a Superconducting Tunnel Junction for X-Ray Fluorescence Spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Hiller, L

    2001-03-06

    A superconducting tunnel junction (STJ) in combination with a superconducting absorber of radiation may function as a highly resolving x-ray spectrometer. Electronic excitations, or quasiparticles, are created when a superconductor absorbs an x ray and are detected as an excess tunnel current through the junction. The number of quasiparticles created and the magnitude of the excess current is proportional to the energy of the absorbed x ray. This is similar to existing semiconductor-based spectrometers that measure electron-hole pairs, but with 1000 times more excitations. The energy measurement therefore can be up to 30 times more precise with a superconducting detector than with a semiconductor detector. This work describes the development and testing of an STJ spectrometer design for x-ray fluorescence applications. First, the basic principles of the STJ spectrometer are explained. This is followed by detailed simulations of the variance in the number of quasiparticles produced by absorption of an x ray. This variance is inherent in the detector and establishes an upper limit on the resolving power of the spectrometer. These simulations include effects due to the materials used in the spectrometer and to the multilayer structure of the device. Next, the spectrometer is characterized as functions of operating temperature, incident x-ray energy, and count rate. Many of these tests were performed with the spectrometer attached to a synchrotron radiation port. Finally, example x-ray fluorescence spectra of materials exposed to synchrotron radiation are presented. These materials are of interest to semiconductor processing and structural biology, two fields that will benefit immediately from the improved resolving power of the STJ spectrometer.

  14. BEOL compatible high tunnel magneto resistance perpendicular magnetic tunnel junctions using a sacrificial Mg layer as CoFeB free layer cap

    Energy Technology Data Exchange (ETDEWEB)

    Swerts, J., E-mail: Johan.Swerts@imec.be; Mertens, S.; Lin, T.; Couet, S.; Tomczak, Y.; Sankaran, K.; Pourtois, G.; Kim, W.; Meersschaut, J.; Souriau, L.; Radisic, D.; Van Elshocht, S.; Kar, G.; Furnemont, A. [imec, Kapeldreef 75, Leuven 3001 (Belgium)

    2015-06-29

    Perpendicularly magnetized MgO-based tunnel junctions are envisaged for future generation spin-torque transfer magnetoresistive random access memory devices. Achieving a high tunnel magneto resistance and preserving it together with the perpendicular magnetic anisotropy during BEOL CMOS processing are key challenges to overcome. The industry standard technique to deposit the CoFeB/MgO/CoFeB tunnel junctions is physical vapor deposition. In this letter, we report on the use of an ultrathin Mg layer as free layer cap to protect the CoFeB free layer from sputtering induced damage during the Ta electrode deposition. When Ta is deposited directly on CoFeB, a fraction of the surface of the CoFeB is sputtered even when Ta is deposited with very low deposition rates. When depositing a thin Mg layer prior to Ta deposition, the sputtering of CoFeB is prevented. The ultra-thin Mg layer is sputtered completely after Ta deposition. Therefore, the Mg acts as a sacrificial layer that protects the CoFeB from sputter-induced damage during the Ta deposition. The Ta-capped CoFeB free layer using the sacrificial Mg interlayer has significantly better electrical and magnetic properties than the equivalent stack without protective layer. We demonstrate a tunnel magneto resistance increase up to 30% in bottom pinned magnetic tunnel junctions and tunnel magneto resistance values of 160% at resistance area product of 5 Ω.μm{sup 2}. Moreover, the free layer maintains perpendicular magnetic anisotropy after 400 °C annealing.

  15. BEOL compatible high tunnel magneto resistance perpendicular magnetic tunnel junctions using a sacrificial Mg layer as CoFeB free layer cap

    International Nuclear Information System (INIS)

    Perpendicularly magnetized MgO-based tunnel junctions are envisaged for future generation spin-torque transfer magnetoresistive random access memory devices. Achieving a high tunnel magneto resistance and preserving it together with the perpendicular magnetic anisotropy during BEOL CMOS processing are key challenges to overcome. The industry standard technique to deposit the CoFeB/MgO/CoFeB tunnel junctions is physical vapor deposition. In this letter, we report on the use of an ultrathin Mg layer as free layer cap to protect the CoFeB free layer from sputtering induced damage during the Ta electrode deposition. When Ta is deposited directly on CoFeB, a fraction of the surface of the CoFeB is sputtered even when Ta is deposited with very low deposition rates. When depositing a thin Mg layer prior to Ta deposition, the sputtering of CoFeB is prevented. The ultra-thin Mg layer is sputtered completely after Ta deposition. Therefore, the Mg acts as a sacrificial layer that protects the CoFeB from sputter-induced damage during the Ta deposition. The Ta-capped CoFeB free layer using the sacrificial Mg interlayer has significantly better electrical and magnetic properties than the equivalent stack without protective layer. We demonstrate a tunnel magneto resistance increase up to 30% in bottom pinned magnetic tunnel junctions and tunnel magneto resistance values of 160% at resistance area product of 5 Ω.μm2. Moreover, the free layer maintains perpendicular magnetic anisotropy after 400 °C annealing

  16. Perpendicular magnetic tunnel junctions with a synthetic storage or reference layer: A new route towards Pt- and Pd-free junctions.

    Science.gov (United States)

    Cuchet, Léa; Rodmacq, Bernard; Auffret, Stéphane; Sousa, Ricardo C; Prejbeanu, Ioan L; Dieny, Bernard

    2016-01-01

    We report here the development of Pt and Pd-free perpendicular magnetic tunnel junctions (p-MTJ) for STT-MRAM applications. We start by studying a p-MTJ consisting of a bottom synthetic Co/Pt reference layer and a synthetic FeCoB/Ru/FeCoB storage layer covered with an MgO layer. We first investigate the evolution of RKKY coupling with Ru spacer thickness in such a storage layer. The coupling becomes antiferromagnetic above 0.5 nm and its strength decreases monotonously with increasing Ru thickness. This contrasts with the behavior of Co-based systems for which a maximum in interlayer coupling is generally observed around 0.8 nm. A thin Ta insertion below the Ru spacer considerably decreases the coupling energy, without basically changing its variation with Ru thickness. After optimization of the non-magnetic and magnetic layer thicknesses, it appears that such a FeCoB/Ru/FeCoB synthetic storage layer sandwiched between MgO barriers can be made stable enough to actually be used as hard reference layer in single or double magnetic tunnel junctions, the storage layer being now a single soft FeCoB layer. Finally, we realize Pt- or Pd-free robust perpendicular magnetic tunnel junctions, still keeping the advantage of a synthetic reference layer in terms of reduction of stray fields at small pillar sizes. PMID:26883933

  17. Structural defects analysis versus spin polarized tunneling in Co2FeAl/MgO/CoFe magnetic tunnel junctions with thick MgO barriers

    Science.gov (United States)

    Gabor, M. S.; Tiusan, C.; Petrisor, T.; Petrisor, T.; Hehn, M.; Lu, Y.; Snoeck, E.

    2013-12-01

    We report on spin polarization reduction by incoherent tunneling in single crystal Co2FeAl/MgO/Co50Fe50 magnetic tunnel junctions (MTJs). A large density of misfit dislocations in the Heusler based MTJs has been provided by a thick MgO barrier and its 3.8% lattice mismatch with the Co2FeAl electrode. Our analysis implicates a correlated structural-transport approach. The crystallographic coherence in the real space has been investigated by High Resolution Transmission Electron Microscopy phase analysis. The electronic transport experiments in variable temperature, fitted with a theoretical extended-Glazman-Matveev model, address different levels of the tunneling mechanisms from direct to multi-center hopping. We demonstrate a double impact of dislocations, as extended defects, on the tunneling polarization. Firstly, the breaking of the crystal symmetry destroys the longitudinal and lateral coherence of the propagating Bloch functions. This affects the symmetry filtering efficiency of the Δ1 states across the (001) MgO barriers and reduces the associated effective tunneling polarization. Secondly, dislocations provide localized states within the MgO gap. This determines temperature activated spin-conserving inelastic tunneling through chains of defects which are responsible for the one order of magnitude drop of the tunnel magnetoresistance from low to room temperature.

  18. Tunneling characteristics for nm-thick mesas consisting of a few intrinsic Josephson junctions

    Science.gov (United States)

    Suzuki, Minoru; Ohmaki, Masayuki; Takemura, Ryota; Hamada, Kenji; Watanabe, Takao; Ota, Kensuke; Kitano, Haruhisa; Maeda, Atsutaka

    2008-10-01

    Very thin mesa structures consisting of a few intrinsic Josephson junctions have been fabricated on single crystal surfaces of Bi2Sr2CaCu2O8+δ. In the fabrication procedure, annealing is conducted after the mesa structure is formed by Ar ion milling. Or, the annealing is skipped and, instead, the electrodes to the mesas have been deposited in vacuum immediately after crystals are cleaved. We have attained both uniform current-voltage (I-V) characteristics and small contact resistances, which are usually difficult to obtain at the same time in the case of nm-thick mesa structures. For the mesas thus fabricated, it is found that the Josephson critical current Jc of the top IJJ (the surface junction) is reduced significantly. The reduction of Jc is more significant when the doping level of the crystal used is lower. We argue that this is due to the proximity efiect of the surface junction, in which the top electrode is in close proximity with the Ag or Au film of a thickness of the order of 300 nm. For mesas obtained by this method, the switching probability distribution has been measured. It is found that when the mesa lateral size is larger than 2 μm the switching is unreproducible and lacking systematic temperature dependence. It is also found that escape temperature Tesc and the standard deviation σ for the switching probability distribution exhibits a large deviation from the Kramers' thermal activation theory. When the lateral size is no larger than 2 μm, the switching probability distribution results show coincidence with the theory in the temperature range from 1.3 K to 5 K. Below 0.5 K, the escape temperature tends to saturate and indicates a crossover near 0.5 K from the thermal activation to the macroscopic quantum tunneling.

  19. Models of charge transport and transfer in molecular switch tunnel junctions of bistable catenanes and rotaxanes

    International Nuclear Information System (INIS)

    The processes by which charge transfer can occur play a foundational role in molecular electronics. Here we consider simplified models of the transfer processes that could be present in bistable molecular switch tunnel junction (MSTJ) devices during one complete cycle of the device from its low- to high- and back to low-conductance state. The bistable molecular switches, which are composed of a monolayer of either switchable catenanes or rotaxanes, exist in either a ground-state co-conformation or a metastable one in which the conduction properties of the two co-conformations, when measured at small biases (+0.1 V), are significantly different irrespective of whether transport is dominated by tunneling or hopping. The voltage-driven generation (±2 V) of molecule-based redox states, which are sufficiently long-lived to allow the relative mechanical movements necessary to switch between the two co-conformations, rely upon unequal charge transfer rates on to and/or off of the molecules. Surface-enhanced Raman spectroscopy has been used to image the ground state of the bistable rotaxane in MSTJ-like devices. Consideration of these models provide new ways of looking at molecular electronic devices that rely, not only on nanoscale charge-transport, but also upon the bustling world of molecular motion in mechanically interlocked bistable molecules

  20. Magnetotransport in MgO-based magnetic tunnel junctions grown by molecular beam epitaxy (invited)

    International Nuclear Information System (INIS)

    The strong impact of molecular beam epitaxy growth and Synchrotron Radiation characterization tools in the understanding of fundamental issues in nanomagnetism and spintronics is illustrated through the example of fully epitaxial MgO-based Magnetic Tunnel Junctions (MTJs). If ab initio calculations predict very high tunnel magnetoresistance (TMR) in such devices, some discrepancy between theory and experiments still exists. The influence of imperfections in real systems has thus to be considered like surface contaminations, structural defects, unexpected electronic states, etc. The influence of possible oxygen contamination at the Fe/MgO(001) interface is thus studied, and is shown to be not so detrimental to TMR as predicted by ab initio calculations. On the contrary, the decrease of dislocations density in the MgO barrier of MTJs using Fe1−xVx electrodes is shown to significantly increase TMR. Finally, unexpected transport properties in Fe1−XCox/MgO/Fe1−XCox (001) are presented. With the help of spin and symmetry resolved photoemission and ab initio calculation, the TMR decrease for Co content higher than 25% is shown to come from the existence of an interface state and the shift of the empty Δ1 minority spin state towards the Fermi level

  1. AlOx barrier growth in magnetic tunnel junctions for sensor applications

    Science.gov (United States)

    Knudde, S.; Farinha, G.; Leitao, D. C.; Ferreira, R.; Cardoso, S.; Freitas, P. P.

    2016-08-01

    Magnetic tunnel junction (MTJ) research has been focused on MgO-based crystalline structures due to high tunnel magnetoresistance (TMR), despite requiring a more severe process control than previous generations of MTJ stacks based on amorphous barriers (e.g. AlOx). In this work, we study the electrical transport properties in AlOx barriers in MTJ sensors fabricated using Ion beam sputtering and remote plasma oxidation. Amorphous barriers were prepared from oxidation of thin Al films, deposited in single step barrier (SSB-Al 1 nm/oxidation) or double step barrier (DSB-Al 0.5 nm/oxidation/Al 0.5 nm/oxidation) structures. We show tunable resistance-area products (RxA) ranging from ≈ 10 Ω μ m2 (suited for nano devices) up to ≈ 100 k Ω μ m2 (suited for large area sensors) with TMR above 30%. For all geometries studied, the structures have a coercivity free linear response and require none or one annealing step. This makes them very competitive for all industrial applications where the TMR level is not the dominant specification to meet.

  2. Evaluation of a ferroelectric tunnel junction by ultraviolet-visible absorption using a removable liquid electrode.

    Science.gov (United States)

    Lee, Hong-Sub; Kang, Kyung-Mun; Yeom, Geun Young; Park, Hyung-Ho

    2016-05-27

    Ferroelectric memristors offer a significant alternative to their redox-based analogs in resistive random access memory because a ferroelectric tunnel junction (FTJ) exhibits a memristive effect that induces resistive switching (RS) regardless of the operating current level. This RS results from a change in the ferroelectric polarization direction, allowing the FTJ to overcome the restriction encountered in redox-based memristors. Herein, the memristive effect of an FTJ was investigated by ultraviolet-visible (UV-Vis) absorption spectroscopy using a removable mercury (Hg) top electrode (TE), BaTiO3 (BTO) ferroelectric tunnel layer, La0.7Sr0.3MnO3 (LSMO) semiconductor bottom electrode, and wide-bandgap quartz (100) single-crystal substrate to determine the low-resistance state (LRS) and high-resistance state (HRS) of the FTJ. A BTO (110)/LSMO (110) polycrystal memristor involving a Hg TE showed a small memristive effect (switching ratio). This effect decreased with increasing read voltage because of a small potential barrier height. The LRS and HRS of the FTJ showed quasi-similar UV-Vis absorption spectra, consistent with the small energy difference between the valence-band maximum of BTO and Fermi level of LSMO near the interface between the LRS and HRS. This energy difference stemmed from the ferroelectric polarization and charge-screening effect of LSMO based on an electrostatic model of the FTJ. PMID:27087674

  3. Evaluation of a ferroelectric tunnel junction by ultraviolet–visible absorption using a removable liquid electrode

    Science.gov (United States)

    Lee, Hong-Sub; Kang, Kyung-Mun; Yeom, Geun Young; Park, Hyung-Ho

    2016-05-01

    Ferroelectric memristors offer a significant alternative to their redox-based analogs in resistive random access memory because a ferroelectric tunnel junction (FTJ) exhibits a memristive effect that induces resistive switching (RS) regardless of the operating current level. This RS results from a change in the ferroelectric polarization direction, allowing the FTJ to overcome the restriction encountered in redox-based memristors. Herein, the memristive effect of an FTJ was investigated by ultraviolet–visible (UV–Vis) absorption spectroscopy using a removable mercury (Hg) top electrode (TE), BaTiO3 (BTO) ferroelectric tunnel layer, La0.7Sr0.3MnO3 (LSMO) semiconductor bottom electrode, and wide-bandgap quartz (100) single-crystal substrate to determine the low-resistance state (LRS) and high-resistance state (HRS) of the FTJ. A BTO (110)/LSMO (110) polycrystal memristor involving a Hg TE showed a small memristive effect (switching ratio). This effect decreased with increasing read voltage because of a small potential barrier height. The LRS and HRS of the FTJ showed quasi-similar UV–Vis absorption spectra, consistent with the small energy difference between the valence-band maximum of BTO and Fermi level of LSMO near the interface between the LRS and HRS. This energy difference stemmed from the ferroelectric polarization and charge-screening effect of LSMO based on an electrostatic model of the FTJ.

  4. Low frequency noise peak near magnon emission energy in magnetic tunnel junctions

    International Nuclear Information System (INIS)

    We report on the low frequency (LF) noise measurements in magnetic tunnel junctions (MTJs) below 4 K and at low bias, where the transport is strongly affected by scattering with magnons emitted by hot tunnelling electrons, as thermal activation of magnons from the environment is suppressed. For both CoFeB/MgO/CoFeB and CoFeB/AlOx/CoFeB MTJs, enhanced LF noise is observed at bias voltage around magnon emission energy, forming a peak in the bias dependence of noise power spectra density, independent of magnetic configurations. The noise peak is much higher and broader for unannealed AlOx-based MTJ, and besides Lorentzian shape noise spectra in the frequency domain, random telegraph noise (RTN) is visible in the time traces. During repeated measurements the noise peak reduces and the RTN becomes difficult to resolve, suggesting defects being annealed. The Lorentzian shape noise spectra can be fitted with bias-dependent activation of RTN, with the attempt frequency in the MHz range, consistent with magnon dynamics. These findings suggest magnon-assisted activation of defects as the origin of the enhanced LF noise

  5. Perpendicular magnetic tunnel junctions with synthetic antiferromagnetic pinned layers based on [Co/Pd] multilayers

    Science.gov (United States)

    Chang, Yao-Jen; Canizo-Cabrera, A.; Garcia-Vazquez, Valentin; Chang, Yang-Hua; Wu, Te-ho

    2013-05-01

    We fabricated MgO-based perpendicular magnetic tunnel junctions (p-MTJ) with Ta/CoFeB magnetic electrodes. Synthetic antiferromagnetic (SAF) pinned layers with perpendicular magnetic anisotropy (PMA) were included into the p-MTJs by using two Co/Pd multilayers (MLs) separated by a thin Ru spacer layer. The MTJs stack has the structure bottom contact/free layer CoFeB (1.0)/MgO (1)/pinned layer CoFeB (1.0)/Ta spacer layer/SAF/Ru cap layer/top contact (the units in parenthesis are in nanometers). The SAF was optimized by changing the repetition period n in one of the Co/Pd multilayers and the Ru thickness in order to obtain PMA with antiferromagnetic (AFM) coupling. The Ru spacer values were 0.7, 0.75, 0.8, 0.85, and 0.9 nm. The magnetic studies show that all magnetic films, including the Ta/CoFeB layers, are perpendicularly magnetized. The two Co/Pd MLs are AFM coupled for n > 2. Controlling the Ru thickness, the interlayer exchange coupling strength Jiec can be tailored. Jiec vs. Ru thickness exhibits a simple exponential decay. The electrical properties of the full p-MTJ with SAF show a low resistance-area (RA) product of 44.7 Ω μm2 and a tunnel magnetoresistance (TMR) ratio of 10.2%.

  6. Analytical description of ballistic spin currents and torques in magnetic tunnel junctions

    KAUST Repository

    Chshiev, M.

    2015-09-21

    In this work we demonstrate explicit analytical expressions for both charge and spin currents which constitute the 2×2 spinor in magnetic tunnel junctions with noncollinear magnetizations under applied voltage. The calculations have been performed within the free electron model in the framework of the Keldysh formalism and WKB approximation. We demonstrate that spin/charge currents and spin transfer torques are all explicitly expressed through only three irreducible quantities, without further approximations. The conditions and mechanisms of deviation from the conventional sine angular dependence of both spin currents and torques are shown and discussed. It is shown in the thick barrier approximation that all tunneling transport quantities can be expressed in an extremely simplified form via Slonczewski spin polarizations and our effective spin averaged interfacial transmission probabilities and effective out-of-plane polarizations at both interfaces. It is proven that the latter plays a key role in the emergence of perpendicular spin torque as well as in the angular dependence character of all spin and charge transport considered. It is demonstrated directly also that for any applied voltage, the parallel component of spin current at the FM/I interface is expressed via collinear longitudinal spin current components. Finally, spin transfer torque behavior is analyzed in a view of transverse characteristic length scales for spin transport.

  7. Temperature increase in nanostructured cells of a magnetic tunnel junction during current-induced magnetization switching

    International Nuclear Information System (INIS)

    Three-dimensional numerical calculations based on the finite element method are performed to calculate the increase in the temperature in nanostructured cells of a magnetic tunnel junction under conditions that are relevant to current-induced magnetization switching for a high-density magnetic random access memory. Three key parameters, the lateral size, the resistance-area product and the applied current density, were varied widely so that their effects on the temperature increase could be examined. The computed results for the temperature increase, as a function of the resistance-area product and the current density, show the same trends that are expected from an equation for the dissipated heat. While the increase in the temperature is expected to be independent of the lateral size, the computations reveal a rather complicated relationship between the two variables, which is contingent on the various conditions that are considered. In a cell array that is relevant to high-density contexts, the temperature increase in the nearest cells is as high as 50% of the cell at which the current is directly applied; this could cause a thermal-stability problem in high-density magnetic random access memories. The temperature increase was also calculated under a more realistic physical picture of the relaxation of tunnelled electrons. These results are in agreement with those that are computed from Joule heating.

  8. Influence of the MgO barrier thickness on the lifetime characteristics of magnetic tunnelling junctions for sensors

    Science.gov (United States)

    Conca, A.; Casper, F.; Paul, J.; Lehndorff, R.; Jakob, G.; Kläui, M.; Hillebrands, B.; Leven, B.

    2016-06-01

    Magnetic tunnelling junctions increasingly enter the market for magnetic sensor applications. Thus, technological parameters such as the lifetime characteristics become more and more important. Here, an analysis of the lifetime characteristics of magnetic tunnelling junctions using the Weibull statistical distribution for CoFeB/MgO/CoFeB junctions is presented. The Weibull distribution is governed by two parameters, the characteristic lifetime η of the population and the shape parameter β, which gives information about the presence of an infant mortality. The suitability of the Weibull distribution is demonstrated for the description of dielectric breakdown processes in MgO-based tunnelling junctions at different voltages. A study of the dependence of the characteristic lifetime extrapolated to the low voltage regime, and the β parameter on the nominal barrier thickness and the resistance  ×  area product of the MgO barrier is shown. The influence of the RF deposition power for the MgO barrier and an annealing step on the Weibull parameters is also discussed.

  9. Unidirectional Spin-Dependent Molecule-Ferromagnet Hybridized States Anisotropy in Cobalt Phthalocyanine Based Magnetic Tunnel Junctions

    Science.gov (United States)

    Barraud, Clément; Bouzehouane, Karim; Deranlot, Cyrile; Fusil, Stéphane; Jabbar, Hashim; Arabski, Jacek; Rakshit, Rajib; Kim, Dong-Jik; Kieber, Christophe; Boukari, Samy; Bowen, Martin; Beaurepaire, Eric; Seneor, Pierre; Mattana, Richard; Petroff, Frédéric

    2015-05-01

    Organic or molecular spintronics is a rising field of research at the frontier between condensed matter physics and chemistry. It aims to mix spin physics and the richness of chemistry towards designing new properties for spin electronics devices through engineering at the molecular scale. Beyond the expectation of a long spin lifetime, molecules can be also used to tailor the spin polarization of the injected current through the spin-dependent hybridization between molecules and ferromagnetic electrodes. In this Letter, we provide direct evidence of a hybrid interface spin polarization reversal due to the differing hybridization between phthalocyanine molecules and each cobalt electrode in Co /CoPc /Co magnetic tunnel junctions. Tunnel magnetoresistance and anisotropic tunnel magnetoresistance experiments show that interfacial hybridized electronic states have a unidirectional anisotropy that can be controlled by an electric field and that spin hybridization at the bottom and top interfaces differ, leading to an inverse tunnel magnetoresistance.

  10. Resonant electron tunneling in single quantum well heterostructure junction of electrodeposited metal semiconductor nanostructures using nuclear track filters

    International Nuclear Information System (INIS)

    We report on resonant electron tunneling through a Cu-Se heterostructure junction grown electrochemically in the submicron size pores (0.8 μm) of a nuclear track filter (Polycarbonate). The prominent feature of negative differential resistance (NDR) has been observed in the current-voltage (I-V) characteristic of the so-fabricated array of resonant tunneling diodes (RTDs) even at room temperature, along with a significant peak to valley current ratio (2.5) of the resonance. Tunneling structures of the nanofabricated RTDs around zero bias are also observed at room temperature. Our results show that the low cost and relatively easy electrodeposition method can be a very effective way to prepare resonant quantum tunneling devices, using the pores of nuclear track filters

  11. Resonant electron tunneling in single quantum well heterostructure junction of electrodeposited metal semiconductor nanostructures using nuclear track filters

    Energy Technology Data Exchange (ETDEWEB)

    Biswas, A.; Avasthi, D.K.; Singh, Benoy K.; Lotha, S.; Singh, J.P.; Fink, D.; Yadav, B.K.; Bhattacharya, B.; Bose, S.K

    1999-05-02

    We report on resonant electron tunneling through a Cu-Se heterostructure junction grown electrochemically in the submicron size pores (0.8 {mu}m) of a nuclear track filter (Polycarbonate). The prominent feature of negative differential resistance (NDR) has been observed in the current-voltage (I-V) characteristic of the so-fabricated array of resonant tunneling diodes (RTDs) even at room temperature, along with a significant peak to valley current ratio (2.5) of the resonance. Tunneling structures of the nanofabricated RTDs around zero bias are also observed at room temperature. Our results show that the low cost and relatively easy electrodeposition method can be a very effective way to prepare resonant quantum tunneling devices, using the pores of nuclear track filters.

  12. Tunnel magnetoresistance in textured Co2FeAl/MgO/CoFe magnetic tunnel junctions on a Si/SiO2 amorphous substrate

    Science.gov (United States)

    Wen, Zhenchao; Sukegawa, Hiroaki; Mitani, Seiji; Inomata, Koichiro

    2011-05-01

    Magnetic tunnel junctions with B2-ordered Co2FeAl full Heusler alloy as a ferromagnetic electrode were fabricated by sputtering on thermally oxidized Si/SiO2 amorphous substrates. A Co2FeAl/MgO/Co50Fe50 structure showed a highly (001)-textured structure and the tunneling magnetoresistance (TMR) ratio of 166% at room temperature and 252% at 48 K were achieved. The temperature dependence of TMR can be fitted with spin wave excitation model, and the bias voltage dependence of differential conductance demonstrated that the high TMR was mainly contributed by coherent tunneling. This work suggests the B2-Co2FeAl is one of the promising candidates for practical spintronic applications.

  13. Tunneling magnetoresistance in fully epitaxial MnAs/AlAs/MnAs ferromagnetic tunnel junctions grown on vicinal GaAs(111)B substrates

    International Nuclear Information System (INIS)

    We have fabricated fully epitaxial single-crystal MnAs/AlAs/MnAs magnetic tunnel junctions (MTJs) grown by molecular-beam epitaxy on vicinal GaAs(111)B substrates. After the bottom MnAs layer was grown at 250 deg. C, the successive AlAs tunnel barrier and the top MnAs layer were grown at a lower temperature of 200 deg. C in order to suppress the surface segregation of Mn atoms. High-resolution transmission electron microscopy revealed that a monocrystalline MnAs/AlAs/MnAs trilayer heterostructure with atomically flat and chemically abrupt interfaces was realized. Tunneling magnetoresistance (TMR) was clearly observed in fully epitaxal MTJs made up of this trilayer heterostructure. The TMR ratio was 1.4% at 10 K and it decreased with increasing the bias voltage and with increasing temperature, but the TMR effect still remained at room temperature

  14. Pulse height reduction effects of superconducting tunnel junction particle detectors for low-energy light molecular ions

    International Nuclear Information System (INIS)

    The performance of particle detectors using superconducting tunnel junctions has been studied for metal cluster or molecular ions accelerated at 3 keV. The output pulse height for individual ion impact decreases as the mass of projectiles increases in a mass range of less than 800 amu. In addition, pulse height reduction effects strongly depend on the molecular species. These phenomena are understood by taking into account secondary electron emission that carries part of the deposited kinetic energies of ion away from the junction surface

  15. Effect of high current density on the admittance response of interface states in ultrathin MIS tunnel junctions.

    OpenAIRE

    Godet, Christian; Fadjie-Djomkam, Alain-Bruno; Ababou-Girard, Soraya

    2013-01-01

    The effect of a high current density on the measured admittance of ultrathin Metal-Insulator-Semiconductor (MIS) tunnel junctions is investigated to obtain a reliable energy distribution of the density, D-S(E), of defects localized at the semiconductor interface. The behavior of admittance Y(V, T, omega) and current density J(V, T) characteristics is illustrated by rectifying Hg//C12H25-Si junctions incorporating n-alkyl molecular layers (1.45 nm thick) covalently bonded to n-type Si(111). Mo...

  16. Tunneling planer Hall effect in Ni81Fe19/Al2O3/Nix Fe1-x junction

    Institute of Scientific and Technical Information of China (English)

    陈慧余; 冯永嘉; 熊曹水

    1999-01-01

    Tunneling planer Hall (TPH) effect in Ni81Fe19/Al2O3/NixFe1-x trilayer junction is different from general planer Hall effect in single-layer film or two-layer junction. This effect concerns the spin-polarized transport, so that the TPH voltage depends on the angle between magnetic vectors of two ferromagnetic layers. The TPH effect is reported to be influenced by composition and magnetic properties of FM layers and the thickness of the insulating layer.

  17. Perpendicularly magnetized ferrimagnetic [Mn50Ga50/Co2FeAl] superlattice and the utilization in magnetic tunnel junctions

    Directory of Open Access Journals (Sweden)

    Q. L. Ma

    2015-08-01

    Full Text Available The ferrimagnetic superlattice (SL [MnGa/Co2FeAl]n exhibiting perpendicular magnetic anisotropy opened a new method for spintronics materials used in magnetic random access memory, because of the high anisotropy, small damping constant and tunable magnetization. In this work, we fabricated SLs with different MnGa composition and studied the MnGa composition dependence of the structure and magnetic properties of the SLs. Furthermore, we fabricated fully perpendicular magnetic tunnel junctions with SLs as both top and bottom electrodes. A clear tunnel magnetoresistance (TMR effect with TMR ratio of 1.3% at room temperature was observed.

  18. Perpendicularly magnetized ferrimagnetic [Mn50Ga50/Co2FeAl] superlattice and the utilization in magnetic tunnel junctions

    Science.gov (United States)

    Ma, Q. L.; Zhang, X. M.; Miyazaki, T.; Mizukami, S.

    2015-08-01

    The ferrimagnetic superlattice (SL) [MnGa/Co2FeAl]n exhibiting perpendicular magnetic anisotropy opened a new method for spintronics materials used in magnetic random access memory, because of the high anisotropy, small damping constant and tunable magnetization. In this work, we fabricated SLs with different MnGa composition and studied the MnGa composition dependence of the structure and magnetic properties of the SLs. Furthermore, we fabricated fully perpendicular magnetic tunnel junctions with SLs as both top and bottom electrodes. A clear tunnel magnetoresistance (TMR) effect with TMR ratio of 1.3% at room temperature was observed.

  19. Tunneling characteristics of YBa 2Cu 3O 7-δ-Pb window-type Josephson junctions

    Science.gov (United States)

    Frangi, F.; Dwir, B.; Pavuna, D.

    1992-02-01

    We present the results of tunneling measurements done on window-type, native-barrier YBa 2Cu 3O 7-δ-Pb junctions. We show features in the I-V curves which are related to the gap of YBa 2Cu 3O 7-δ, as well as to the Pb and YBa 2Cu 3O 7-δ phonon spectra. The nature of barrier in these structures is found to be semi-conducting. We can also see the asymmetry in the tunneling curves.

  20. Quantitative impedance characterization of sub-10 nm scale capacitors and tunnel junctions with an interferometric scanning microwave microscope

    International Nuclear Information System (INIS)

    We present a method to characterize sub-10 nm capacitors and tunnel junctions by interferometric scanning microwave microscopy (iSMM) at 7.8 GHz. At such device scaling, the small water meniscus surrounding the iSMM tip should be reduced by proper tip tuning. Quantitative impedance characterization of attofarad range capacitors is achieved using an ‘on-chip’ calibration kit facing thousands of nanodevices. Nanoscale capacitors and tunnel barriers were detected through variations in the amplitude and phase of the reflected microwave signal, respectively. This study promises quantitative impedance characterization of a wide range of emerging functional nanoscale devices. (paper)