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Sample records for bulk inp synthesized

  1. Electron Spin Relaxation in Intrinsic Bulk InP Semiconductor

    CERN Document Server

    Ma, Hong; Wang, Lihua; Ma, Guohong

    2010-01-01

    Electron spin dynamics is studied by time resolved pump probe reflectivity (TRPPR) technique using the co- and counter-circularly polarized femtosecond pulses in intrinsic bulk Indium Phosphide (InP) crystal at room temperature and 70 K. The reflectivity change from bleaching into absorption enhancement is observed with increasing pump photon energy. This phenomenon can be explained in terms of the spin sensitive band filling and band gap renormalization effects. Although electron spin relaxation process at room temperature is much faster than that at 70K, carrier density dependence of electron spin relaxation shows similar tendency. With increasing carrier density, the electron spin relaxation time increases initially and then decreases after reaching a maximum value. Our experimental results agree well with the recent theoretical prediction and D'yakonov-Perel' mechanism is considered as a dominating contribution to the electron spin relaxation in intrinsic bulk InP semiconductor.

  2. InP Bulk Crystals Grown from Various Stoichiometric Melt

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    InP crystal was grown from stoichiometric or non-stoichiometric melt, including P-rich and In-rich condition by the P-injection synthesis LEC method. Owing to the non-stoichiometric condition, there are many pores in the tail of the P-rich ingot. Samples were characterized by high speed photoluminescence mapping and E.P.D. mapping. The perfection (dislocation, stoichiometry and uniformity) of these samples were studied and compared. The PL peak intensity standard deviation of the 4-inch InP wafer is higher. The EPDs around the pores are higher than the other regions. Besides the stress releasing, the pores and the high concentration of dislocations around them are the leading factors causing the inhomogeneity of the wafer. By adjusting the thermal field and ensuring the chemical stoichiometry, InP crystals of larger diameters and better performance can be developed.

  3. The effect of bulk traps on the InP (Indium Phosphide) accumulation type MISFET (Metal-Insulator-Semiconductor Field-Effect Transistor)

    Science.gov (United States)

    Meiners, L. G.

    The enclosed reports represent work performed at USCD on Contract N00014-82-K-2032 entitled Surface and Interfacial Properties of InP and provides a full account of the results obtained during the contract period: May 1, 1984 through April 31, 1985. The paper, Space charge-limited currents and trapping in semi-insulating InP, has now been published in Electron. Device Letters, volume EDL-6, page 356 (1985). The manuscript, Effect of bulk traps on the InP accumulation type MISFET, will be presented as an invited talk at the fall meeting in the Journal of the Electrochemical Society.

  4. Dynamic Plastic Deformation (DPD): A Novel Technique for Synthesizing Bulk Nanostructured Metals

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    While some superior properties of nanostructured materials (with structural scales below 100 nm) have attracted numerous interests of material scientists, technique development for synthesizing nanostructured metals and alloys in 3-dimensional (3D) bulk forms is still challenging despite of extensive investigations over decades.Here we report a novel synthesis technique for bulk nanostructured metals based on plastic deformation at high Zener-Hollomon parameters (high strain rates or low temperatures), i.e., dynamic plastic deformation (DPD).The basic concept behind this approach will be addressed together with a few examples to demonstrate the capability and characteristics of this method. Perspectives and future developments of this technique will be highlighted.

  5. Method of synthesizing bulk transition metal carbide, nitride and phosphide catalysts

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Jae Soon; Armstrong, Beth L; Schwartz, Viviane

    2015-04-21

    A method for synthesizing catalyst beads of bulk transmission metal carbides, nitrides and phosphides is provided. The method includes providing an aqueous suspension of transition metal oxide particles in a gel forming base, dropping the suspension into an aqueous solution to form a gel bead matrix, heating the bead to remove the binder, and carburizing, nitriding or phosphiding the bead to form a transition metal carbide, nitride, or phosphide catalyst bead. The method can be tuned for control of porosity, mechanical strength, and dopant content of the beads. The produced catalyst beads are catalytically active, mechanically robust, and suitable for packed-bed reactor applications. The produced catalyst beads are suitable for biomass conversion, petrochemistry, petroleum refining, electrocatalysis, and other applications.

  6. Raman and dielectric studies of GdMnO3 bulk ceramics synthesized from nano powders

    Science.gov (United States)

    Samantaray, S.; Mishra, D. K.; Roul, B. K.

    2017-05-01

    Nanocrystalline GdMnO3 (GMO) powders has been synthesized by a simple chemical route i. e. pyrophoric reaction technique and then sintered in the form of bulk pellet at 850°C for 24 hours by adopting slow step sintering schedule. It is observed that by reducing the particles size, chemical route enhances the mixing process as well as decreasing the sintering temperature to get single phase material system in compared to the polycrystalline sample prepared directly from the micron sized commercial powder. Raman spectroscopic studies confirm that the sample is in single phase without any detectable impurity. Frequency dependent dielectric properties i.e., dielectric constant (K) and dielectric loss (tanδ) of GMO ceramics sintered at 850°C for 24 hours were studied at room temperature. The sample showed high K value (˜2736) in the frequency of 100 Hz at room temperature.

  7. Thermal diffusion in nanostructured porous InP

    Indian Academy of Sciences (India)

    R Srinivasan; K Ramachandran

    2008-11-01

    Nanostructured porous InP samples were prepared by electrochemical anodic dissolution of InP for various current densities and etching periods. The samples were characterized by SEM and photoluminescence (PL) where a blue shift was observed in PL. Thermal properties studied by photoacoustic (PA) spectroscopy revealed one order decrease in thermal conductivity of porous InP compared to the bulk. Further it is shown that the thermal conductivity of porous InP decreases with decrease in size of the particles.

  8. Surface chemistry of InP quantum dots: a comprehensive study.

    Science.gov (United States)

    Cros-Gagneux, Arnaud; Delpech, Fabien; Nayral, Céline; Cornejo, Alfonso; Coppel, Yannick; Chaudret, Bruno

    2010-12-29

    Advanced (1)H, (13)C, and (31)P solution and solid-state NMR studies combined with IR spectroscopy were used to probe, at the molecular scale, the composition and the surface chemistry of indium phosphide (InP) quantum dots (QDs) prepared via a non-coordinating solvent strategy. This nanomaterial can be described as a core-multishell object: an InP core, with a zinc blende bulk structure, is surrounded first by a partially oxidized surface shell, which is itself surrounded by an organic coating. This organic passivating layer is composed, in the first coordination sphere, of tightly bound palmitate ligands which display two different bonding modes. A second coordination sphere includes an unexpected dialkyl ketone and residual long-chain non-coordinating solvents (ODE and its isomers) which interact through weak intermolecular bonds with the alkyl chains of the carboxylate ligands. We show that this ketone is formed during the synthesis process via a decarboxylative coupling route and provides oxidative conditions which are responsible for the oxidation of the InP core surface. This phenomenon has a significant impact on the photoluminescence properties of the as-synthesized QDs and probably accounts for the failure of further growth of the InP core.

  9. Structural Characterization of Carbon Nanomaterial Film In Situ Synthesized on Various Bulk Metals

    Directory of Open Access Journals (Sweden)

    J. Y. Xu

    2014-01-01

    Full Text Available Carbon nanofiber films were prepared via a simple chemical vapor deposition (CVD method on various bulk metal substrates including bulk 316 L stainless steel, pure cobalt, and pure nickel treated by surface mechanical attrition treatment (SMAT. The microstructures of the carbon nanomaterial film were studied by SEM, TEM, XRD, and Raman spectroscopy. In this paper, bulk metallic materials treated by SMAT served as substrates as well as catalysts for carbon nanomaterial film formation. The results indicate that the carbon nanofiber films are formed concerning the catalytic effects of the refined metallic particles during CVD on the surface of SMAT-treated bulk metal substrates. However, distinguished morphologies of carbon nanomaterial film are displayed in the case of the diverse bulk metal substrates.

  10. Semiclassical three-valley Monte Carlo simulation analysis of steady-state and transient electron transport within bulk InAsxP1-x, InAs and InP

    Directory of Open Access Journals (Sweden)

    Hadi Arabshahi

    2010-04-01

    Full Text Available We have studied how electrons, initially in thermal equilibrium, drift under the action of an applied electric field within bulk zincblende InAsxP1-x, InAs and InP. Calculations are made using a non-parabolic effective-mass energy band model. Monte Carlo simulation includes all of the major scattering mechanisms. The band parameters used in the simulation are extracted from optimised pseudo-potential band calculations to ensure excellent agreement with experimental information and ab-initio band models. The effects of alloy scattering on the electron transport physics are examined. For all materials, it is found that electron velocity overshoot only occurs when the electric field is increased to a value above a certain critical field, unique to each material. This critical field is strongly dependent on the material parameters. Transient velocity overshoot has also been simulated, with the sudden application of fields up to 1600 kVm-1, appropriate to the gate-drain fields expected within an operational field-effect transistor. The electron drift velocity relaxes to the saturation value of about 1.5105 ms-1 within 4 pico-seconds for all crystal structures. The steady-state and transient velocity overshoot characteristics are in fair agreement with other recent calculations.

  11. Mechanistic Insights into the Formation of InP Quantum Dots**

    Science.gov (United States)

    Allen, Peter M.; Walker, Brian J.

    2011-01-01

    This paper examines the molecular mechanism of InP colloidal quantum dot (QD) syntheses. Unlike methods for monodisperse PbSe and CdSe we found that existing InP syntheses result in total depletion of molecular phosphorous species following nucleation, so QD growth is due exclusively to non-molecular ripening. We find that amines inhibit precursor depletion via solvation, and these findings may lead to better synthetic methodology for InP QDs. PMID:20025010

  12. Thermoelectric properties of bulk MoSi2 synthesized by solid state microwave heating

    Science.gov (United States)

    Lan, Yu; Xie, Mianyu; Ouyang, Ting; Yue, Song

    2016-07-01

    In this research, single phase α-MoSi2 was prepared by solid state hybrid microwave heating within 90 min at relatively low temperature 1273 K. Such precursor powders were then ball milled and sintered by microwave heating at different temperatures. The thermoelectric (TE) properties of MoSi2 bulks were investigated in the temperature range of 300-673 K. When the sintering temperature increases from 973 K to 1273 K, the electrical resistivity decreases significantly and the Seebeck coefficients increase obviously, leading to the maximum TE powder factor of 6.2 × 10-6Wm-1K-2 at 673 K. These results demonstrate the feasibility of high efficient and economical synthesis of MoSi2 by microwave heating technique, with the final products having comparable TE performance in comparison to those from typical methods with long duration and energy-extensive consumption.

  13. Thermoelectric Properties of Mg2Si1-xSnx Synthesized by Bulk Mechanical Alloying

    Institute of Scientific and Technical Information of China (English)

    SONG Ren-bo; LIU Ya-zheng; Tatsuhiko AIZAWA

    2006-01-01

    Bulk mechanical alloying (BMA) has been successfully applied to solid-state synthesis of p-type and n-type thermoelectric materials Mg2Si1-xSnx (x = 0, 0.2, 0.4, 0.6, 0.8, 1) from element-powders at the room temperature in a relatively short time. The electrical conductivity, the Seebeck coefficient and the thermal conductivity of the Mg2Si1-xSnx are quite sensitive to the x-content. With the x-content rising, the electrical conductivity increases. When x = 0.6, it reaches the lowest and Mg2Si shows an n-type of semi-conducting. However, when x = 0.2 and T>525 K, the Seebeck coefficient of the samples will change the opposite way. While x≥0.4, the samples present a p-type of semi-conducting. The figure of merit, Z of Mg2Si1-xSnx will be obtained in the range from 300 K to 700 K. When x = 0.6, Z proves to be higher than that of other samples at 300 K≤T≤650 K.

  14. Photoactive area modification in bulk heterojunction organic solar cells using optimization of electrochemically synthesized ZnO nanorods

    Science.gov (United States)

    Mehdi, Ahmadi; Sajjad Rashidi, Dafeh

    2015-11-01

    In this work, ZnO nanorod arrays grown by an electrochemical deposition method are investigated. The crucial parameters of length, diameter, and density of the nanorods are optimized over the synthesize process and nanorods growth time. Crystalline structure, morphologies, and optical properties of ZnO nanorod arrays are studied by different techniques such as x-ray diffraction, scanning electron microscope, atomic force microscope, and UV-visible transmission spectra. The ZnO nanorod arrays are employed in an inverted bulk heterojunction organic solar cell of Poly (3-hexylthiophene):[6-6] Phenyl-(6) butyric acid methyl ester to introduce more surface contact between the electron transporter layer and the active layer. Our results show that the deposition time is a very important factor to achieve the aligned and uniform ZnO nanorods with suitable surface density which is required for effective infiltration of active area into the ZnO nanorod spacing and make a maximum interfacial surface contact for electron collection, as overgrowing causes nanorods to be too dense and thick and results in high resistance and lower visible light transmittance. By optimizing the thickness of the active layer on top of ZnO nanorods, an improved efficiency of 3.17% with a high FF beyond 60% was achieved.

  15. Photoactive area modification in bulk heterojunction organic solar cells using optimization of electrochemically synthesized ZnO nanorods

    Institute of Scientific and Technical Information of China (English)

    Mehdi Ahmadi; Sajjad Rashidi Dafeh

    2015-01-01

    In this work, ZnO nanorod arrays grown by an electrochemical deposition method are investigated. The crucial parameters of length, diameter, and density of the nanorods are optimized over the synthesize process and nanorods growth time. Crystalline structure, morphologies, and optical properties of ZnO nanorod arrays are studied by different techniques such as x-ray diffraction, scanning electron microscope, atomic force microscope, and UV–visible transmission spectra. The ZnO nanorod arrays are employed in an inverted bulk heterojunction organic solar cell of Poly (3-hexylthiophene):[6-6] Phenyl-(6) butyric acid methyl ester to introduce more surface contact between the electron transporter layer and the active layer. Our results show that the deposition time is a very important factor to achieve the aligned and uniform ZnO nanorods with suitable surface density which is required for effective infiltration of active area into the ZnO nanorod spacing and make a maximum interfacial surface contact for electron collection, as overgrowing causes nanorods to be too dense and thick and results in high resistance and lower visible light transmittance. By optimizing the thickness of the active layer on top of ZnO nanorods, an improved efficiency of 3.17%with a high FF beyond 60%was achieved.

  16. Airbreathing Propulsion Fuels and Energy Exploratory Research and Development (APFEERD) Sub Task: Review of Bulk Physical Properties of Synthesized Hydrocarbon:Kerosenes and Blends

    Science.gov (United States)

    2017-06-01

    Exploratory Research and Development (APFEERD) Subtask: Review of Bulk Physical Properties of Synthesized Hydrocarbon: Kerosenes and Blends Clifford...AEROSPACE SYSTEMS DIRECTORATE (R4RQ) Delivery Order 0006: Airbreathing Propulsion Fuels and Energy Exploratory Research and Development (APFEERD) Sub...Acronym Description AFRL Air Force Research Laboratory APFEERD Airbreathing Propulsion Fuels and Energy Exploratory Research and Development

  17. Potential ability of 3 T-class trapped field on MgB2 bulk surface synthesized by the infiltration-capsule method

    Science.gov (United States)

    Naito, Tomoyuki; Ogino, Arata; Fujishiro, Hiroyuki

    2016-11-01

    We successfully synthesized a dense (˜90%-filled) MgB2 bulk with no residual Mg via an infiltration process by overcoming the problems in this process such as the expansion of a B precursor disk under a liquid Mg infiltration and the residuals of unreacted Mg in the bulk using a specially designed capsule. As a result, we have achieved a record-high trapped field to date, {B}{{T}}, of 2.4 T at the center of the bulk surface at the lowest temperature of 15.9 K among the infiltration-processed MgB2 bulks. The trapped-fields simulated for a model with the experimental {J}{{c}}({μ }0H) characteristics well reproduced the experimental {B}{{T}}’s and gave a reliable estimated {B}{{T}} below 15.9 K. The extrapolation of the experimental and simulated {B}{{T}} curve reached 3 T at 4.2 K. The critical current densities, {J}{{c}}({μ }0H)’s, at 20 K were 1.8 × 105 A cm-2 under the self-field and 4.5 × 103 A cm-2 under the magnetic-field of {μ }0H = 3 T. The connectivity, K, of 16% of the present bulk was comparable with that of the ˜50%-filled MgB2 bulk. The high {B}{{T}} with low K and the microstructure of the present bulk suggested that the high- and low-{J}{{c}} regions coexisted because of the wide variation of the MgB2 grain-size.

  18. Bulk MgB2 superconductor with high critical current density synthesized by self-propagating high-temperature synthesis method

    Institute of Scientific and Technical Information of China (English)

    Feng Wang-Jun; Xia Tian-Dong; Liu Tian-Zuo; Zhao Wen-Jun; Wei Zhi-Qiang

    2005-01-01

    Pure MgB2 bulk samples are successfully synthesized by self-propagating high-temperature synthesis (SHS)method. The experiments show that the best preheating temperature is 250℃, the highest Jc values of the prepared MgB2 reach 1.5×106A/cm2 (10K, 0.5T) and 1.7×106A/cm2 (20K, 0T), and the MgB2 particle sizes range from 2 to 5μm. The advantages of this method are that it is simple, economical and suitable for the manufacture of bulk MgB2 materials on industrial scale.

  19. Refinement of atomic and magnetic structures using neutron diffraction for synthesized bulk and nano-nickel zinc gallate ferrite

    Energy Technology Data Exchange (ETDEWEB)

    Ata-Allah, S.S. [Reactor Physics Department, NRC, Atomic Energy Authority, P.O. Box 13759, Cairo (Egypt); Balagurov, A.M. [Frank Laboratory of Neutron Physics, JINR, 141980 Dubna, Moscow region (Russian Federation); Hashhash, A. [Reactor Physics Department, NRC, Atomic Energy Authority, P.O. Box 13759, Cairo (Egypt); Bobrikov, I.A. [Frank Laboratory of Neutron Physics, JINR, 141980 Dubna, Moscow region (Russian Federation); Hamdy, Sh. [Reactor Physics Department, NRC, Atomic Energy Authority, P.O. Box 13759, Cairo (Egypt)

    2016-01-15

    The parent NiFe{sub 2}O{sub 4} and Zn/Ga substituted spinel ferrite powders have been prepared by solid state reaction technique. As a typical example, the Ni{sub 0.7}Zn{sub 0.3}Fe{sub 1.5}Ga{sub 0.5}O{sub 4} sample has been prepared by sol–gel auto combustion method with the nano-scale crystallites size. X-ray and Mössbauer studies were carried out for the prepared samples. Structure and microstructure properties were investigated using the time-of-flight HRFD instrument at the IBR-2 pulsed reactor, at a temperatures range 15–473 K. The Rietveld refinement of the neutron diffraction data revealed that all samples possess cubic symmetry corresponding to the space group Fd3m. Cations distribution show that Ni{sup 2+} is a complete inverse spinel ion, while Ga{sup 3+} equally distributed between the two A and B-sublattices. The level of microstrains in bulk samples was estimated as very small while the size of coherently scattered domains is quite large. For nano-structured sample the domain size is around 120 Å.

  20. Wurtzite-Phased InP Micropillars Grown on Silicon with Low Surface Recombination Velocity.

    Science.gov (United States)

    Li, Kun; Ng, Kar Wei; Tran, Thai-Truong D; Sun, Hao; Lu, Fanglu; Chang-Hasnain, Connie J

    2015-11-11

    The direct growth of III-V nanostructures on silicon has shown great promise in the integration of optoelectronics with silicon-based technologies. Our previous work showed that scaling up nanostructures to microsize while maintaining high quality heterogeneous integration opens a pathway toward a complete photonic integrated circuit and high-efficiency cost-effective solar cells. In this paper, we present a thorough material study of novel metastable InP micropillars monolithically grown on silicon, focusing on two enabling aspects of this technology-the stress relaxation mechanism at the heterogeneous interface and the microstructure surface quality. Aberration-corrected transmission electron microscopy studies show that InP grows directly on silicon without any amorphous layer in between. A set of periodic dislocations was found at the heterointerface, relaxing the 8% lattice mismatch between InP and Si. Single crystalline InP therefore can grow on top of the fully relaxed template, yielding high-quality micropillars with diameters expanding beyond 1 μm. An interesting power-dependence trend of carrier recombination lifetimes was captured for these InP micropillars at room temperature, for the first time for micro/nanostructures. By simply combining internal quantum efficiency with carrier lifetime, we revealed the recombination dynamics of nonradiative and radiative portions separately. A very low surface recombination velocity of 1.1 × 10(3) cm/sec was obtained. In addition, we experimentally estimated the radiative recombination B coefficient of 2.0 × 10(-10) cm(3)/sec for pure wurtzite-phased InP. These values are comparable with those obtained from InP bulk. Exceeding the limits of conventional nanowires, our InP micropillars combine the strengths of both nanostructures and bulk materials and will provide an avenue in heterogeneous integration of III-V semiconductor materials onto silicon platforms.

  1. Oxide or carbide nanoparticles synthesized by laser ablation of a bulk Hf target in liquids and their structural, optical, and dielectric properties

    Science.gov (United States)

    Semaltianos, N. G.; Friedt, J.-M.; Chassagnon, R.; Moutarlier, V.; Blondeau-Patissier, V.; Combe, G.; Assoul, M.; Monteil, G.

    2016-05-01

    Laser ablation of a bulk Hf target in deionized (DI) water, ethanol, or toluene was carried out for the production of nanoparticles' colloidal solutions. Due to the interaction of the ablation plasma plume species with the species which are produced by the liquid decomposition at the plume-liquid interface, hafnia (HfO2) nanoparticles are synthesized in DI water, hafnium carbide (HfC) nanoparticles in toluene, and a mixture of these in ethanol. The hafnia nanoparticles are in the monoclinic low temperature phase and in the tetragonal and fcc high temperature phases. Their size distribution follows log-normal function with a median diameter in the range of 4.3-5.3 nm. Nanoparticles synthesized in DI water have band gaps of 5.6 and 5.4 eV, in ethanol 5.72 and 5.65 eV (using low and high pulse energy), and in toluene 3 eV. The values for the relative permittivity in the range of 7.74-8.90 were measured for hafnia nanoparticles' thin films deposited on substrates by drop-casting (self-assembled layers) in parallel plate capacitor structures.

  2. Oxide or carbide nanoparticles synthesized by laser ablation of a bulk Hf target in liquids and their structural, optical, and dielectric properties

    Energy Technology Data Exchange (ETDEWEB)

    Semaltianos, N. G., E-mail: nsemaltianos@yahoo.com [Department of Physics, Aristotle University of Thessaloniki, Thessaloniki 54124 (Greece); Friedt, J.-M.; Blondeau-Patissier, V.; Combe, G. [Dépt. Temps-Fréquence, Femto-st, UMR CNRS 6174, Université de Franche-Comté, Besançon 25030 (France); Chassagnon, R. [Laboratoire Interdisciplinaire Carnot De Bourgogne, ICB UMR CNRS 6303, Université de Bourgogne Franche-Comté, Dijon 21078 (France); Moutarlier, V. [UTINAM, UMR CNRS 6213, Université de Franche-Comté, Besançon 25030 (France); Assoul, M.; Monteil, G. [Dépt. Mécanique Appliquée, Femto-st, UMR CNRS 6174, Université de Franche-Comté, Besançon 25030 (France)

    2016-05-28

    Laser ablation of a bulk Hf target in deionized (DI) water, ethanol, or toluene was carried out for the production of nanoparticles' colloidal solutions. Due to the interaction of the ablation plasma plume species with the species which are produced by the liquid decomposition at the plume-liquid interface, hafnia (HfO{sub 2}) nanoparticles are synthesized in DI water, hafnium carbide (HfC) nanoparticles in toluene, and a mixture of these in ethanol. The hafnia nanoparticles are in the monoclinic low temperature phase and in the tetragonal and fcc high temperature phases. Their size distribution follows log-normal function with a median diameter in the range of 4.3–5.3 nm. Nanoparticles synthesized in DI water have band gaps of 5.6 and 5.4 eV, in ethanol 5.72 and 5.65 eV (using low and high pulse energy), and in toluene 3 eV. The values for the relative permittivity in the range of 7.74–8.90 were measured for hafnia nanoparticles' thin films deposited on substrates by drop-casting (self-assembled layers) in parallel plate capacitor structures.

  3. Preparation and optical properties of composite thin films with embedded InP nanoparticles

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    InP nanoparticles embedded in SiO2 thin films were prepared by radio-frequency magnetron co-sputtering. We analyzed the structure and growth behavior of the composite films under different preparation conditions. X-ray diffraction and Raman spectroscopy analyses indicate that InP nanoparticles have a polycrystalline structure. The aver-age size of InP nanoparticles is in the range of 3-10 nm. The broadening and red shift of the Raman peaks were observed,which can be interpreted by the phonon confinement model. Optical transmission spectra indicate that the optical absorp-tion edges of the films can be modulated in the visible light range. The marked blue shift of the absorption edge with respect to that of bulk InP is explained by the quantum con-finement effect. The theoretical values of the blue shift pre-dicted by the effective mass approximation model are differ-ent from the experimental results for the InP-SiO2 system. Analyses indicate that the exciton effective mass of the InP nanoparticles is not constant and is inverse relative to the particles radius,which may be the main reason that results in the discrepancy between the theoretical and the experi-mental result. We discussed the possible transition of the direct band gap to the indirect band gap for InP nanoparti-cles embedded in SiO2 thin films.

  4. Ice-nucleating particles in Canadian Arctic sea-surface microlayer and bulk seawater

    Science.gov (United States)

    Irish, Victoria E.; Elizondo, Pablo; Chen, Jessie; Chou, Cédric; Charette, Joannie; Lizotte, Martine; Ladino, Luis A.; Wilson, Theodore W.; Gosselin, Michel; Murray, Benjamin J.; Polishchuk, Elena; Abbatt, Jonathan P. D.; Miller, Lisa A.; Bertram, Allan K.

    2017-09-01

    The sea-surface microlayer and bulk seawater can contain ice-nucleating particles (INPs) and these INPs can be emitted into the atmosphere. Our current understanding of the properties, concentrations, and spatial and temporal distributions of INPs in the microlayer and bulk seawater is limited. In this study we investigate the concentrations and properties of INPs in microlayer and bulk seawater samples collected in the Canadian Arctic during the summer of 2014. INPs were ubiquitous in the microlayer and bulk seawater with freezing temperatures in the immersion mode as high as -14 °C. A strong negative correlation (R = -0. 7, p = 0. 02) was observed between salinity and freezing temperatures (after correction for freezing depression by the salts). One possible explanation is that INPs were associated with melting sea ice. Heat and filtration treatments of the samples show that the INPs were likely heat-labile biological materials with sizes between 0.02 and 0.2 µm in diameter, consistent with previous measurements off the coast of North America and near Greenland in the Arctic. The concentrations of INPs in the microlayer and bulk seawater were consistent with previous measurements at several other locations off the coast of North America. However, our average microlayer concentration was lower than previous observations made near Greenland in the Arctic. This difference could not be explained by chlorophyll a concentrations derived from satellite measurements. In addition, previous studies found significant INP enrichment in the microlayer, relative to bulk seawater, which we did not observe in this study. While further studies are needed to understand these differences, we confirm that there is a source of INP in the microlayer and bulk seawater in the Canadian Arctic that may be important for atmospheric INP concentrations.

  5. Modeling on the size dependent properties of InP quantum dots: a hybrid functional study

    Science.gov (United States)

    Cho, Eunseog; Jang, Hyosook; Lee, Junho; Jang, Eunjoo

    2013-05-01

    Theoretical calculations based on density functional theory were performed to provide better understanding of the size dependent electronic properties of InP quantum dots (QDs). Using a hybrid functional approach, we suggest a reliable analytical equation to describe the change of energy band gap as a function of size. Synthesizing colloidal InP QDs with 2-4 nm diameter and measuring their optical properties was also carried out. It was found that the theoretical band gaps showed a linear dependence on the inverse size of QDs and gave energy band gaps almost identical to the experimental values.

  6. Single n+-i-n+ InP nanowires for highly sensitive terahertz detection

    Science.gov (United States)

    Peng, Kun; Parkinson, Patrick; Gao, Qian; Boland, Jessica L.; Li, Ziyuan; Wang, Fan; Mokkapati, Sudha; Fu, Lan; Johnston, Michael B.; Tan, Hark Hoe; Jagadish, Chennupati

    2017-03-01

    Developing single-nanowire terahertz (THz) electronics and employing them as sub-wavelength components for highly-integrated THz time-domain spectroscopy (THz-TDS) applications is a promising approach to achieve future low-cost, highly integrable and high-resolution THz tools, which are desirable in many areas spanning from security, industry, environmental monitoring and medical diagnostics to fundamental science. In this work, we present the design and growth of n+-i-n+ InP nanowires. The axial doping profile of the n+-i-n+ InP nanowires has been calibrated and characterized using combined optical and electrical approaches to achieve nanowire devices with low contact resistances, on which the highly-sensitive InP single-nanowire photoconductive THz detectors have been demonstrated. While the n+-i-n+ InP nanowire detector has a only pA-level response current, it has a 2.5 times improved signal-to-noise ratio compared with the undoped InP nanowire detector and is comparable to traditional bulk THz detectors. This performance indicates a promising path to nanowire-based THz electronics for future commercial applications.

  7. Optimization of vortex pinning at grain boundaries on ex-situ MgB2 bulks synthesized by spark plasma sintering

    Science.gov (United States)

    Naito, Tomoyuki; Endo, Yuri; Fujishiro, Hiroyuki

    2017-09-01

    Grain boundaries are well known to be the predominant pinning centers in MgB2 superconductors. To study the effects of grain boundaries on the trapped field properties of MgB2 bulk, we prepared MgB2 bulks by a spark plasma sintering method using a ball-milled starting powder. The trapped field was maximized for the bulk made from the ball-milled powder with crystallite size, τ, of 27 nm; the highest trapped field, {B}{{T}}, of 2.3 T achieved at 19.3 K was 1.2 times larger than that of the bulk made from the non ball-milled powder (τ = 50 nm). The degradation of the trapped field for the bulk from finer powder (τ = 6 nm) originated mainly from the lowered {T}{{c}}. The critical current density, {J}{{c}}, and the pinning force density, {F}{{p}}, were also maximized for the bulk from τ = 27 nm. The competition between the increase of the numerical density of grain boundaries and the degradation of superconductivity determined the vortex pinning properties for the MgB2 bulks with mechanically refined grains. The scaling analysis for the pinning force density suggested that the change in the dimension of the dominant pinning source from 2D (surface) to 0D (point) was induced by grain refining. Although the nanometric impurity particles such as MgB4, MgO and Mg-B-O were created in the bulk during both ball-milling and spark plasma sintering processes, we considered the point-contact between the refined grains was the predominant point pinning source.

  8. Thin films of InP for photovoltaic energy conversion. Final report, July 5, 1979-July 4, 1980

    Energy Technology Data Exchange (ETDEWEB)

    Manasevit, H. M.; Ruth, R. P.; Moudy, L. A.; Yang, J. J.J.; Johnson, R. E.

    1980-08-01

    Research to develop a low-cost high-efficiency thin-film InP heterojunction solar cell, using the metalorganic chemical vapor deposition (MO-CVD) technique for InP film growth on suitable substrates is reported. Heterostructure devices of CdS/InP, using InP films prepared by CO-CVD, were prepared and characterized. The research effort involved three major technical tasks: (1) materials growth; (2) materials characterization; and (3) device fabrication and characterization. The principal results achieved in the investigations are as follows: (1) temperature-activated orientation-dependent background donor doping was observed in undoped epitaxial InP films; (2) p-type epitaxial InP films were prepared by Zn and by Cd doping during growth; (3) the efficacy of Cd doping was found to vary exponentially with the reciprocal of the deposition temperature in the range 650 to 730/sup 0/C; (4) Cd doping appeared to offer no clear advantages over Zn doping for preparation of p-type InP by the MO-CVD process; (5) GaP grown by MO-CVD was investigated as a possible intermediate-layer material for growth of InP films on low-cost substrates; (6) p/sup +/GaAs polycrystalline layers (p > /sup 19/ cm/sup -3/) were successfully prepared by Zn doping during MO-CVD growth on various low-cost substrates and used as surfaces for growth of p-type polycrystalline InP:Zn layers; (7) nCdS/pInP heterojunction solar cells were prepared by vacuum deposition of CdS onto p-type InP films grown by MO-CVD as well as on InP single-crystal wafers; (8) the best polycrystalline CdS/InP cells were obtained in structures on P/sup +/GaAs:Zn layers on both Mo sheet and Corning Code 0317 Glass; and (9) structure analyses of the Cds films used in the heterojunction cells indicated the presence of polycrystalline hexagonal CdS even in films grown on single-crystal InP films or bulk-wafer substrates. (WHK)

  9. Photoluminescence lifetime measurements in InP wafers

    Science.gov (United States)

    Landis, Geoffrey A.; Jenkins, Phillip; Weinberg, Irving

    1991-01-01

    A simple apparatus to measure the minority carrier lifetime in InP has been developed. The technique stimulates the sample with a short pulse of light from a diode laser and measures the photoluminescence decay to extract the minority carrier lifetime. The photoluminescence lifetime in InP as a function of doping on both n- and p-type material is examined. The results also show a marked difference in the lifetime of n-type InP and p-type InP of similar doping levels. N-type InP shows a lifetime considerably longer than the expected radiative limited lifetime.

  10. Influence of growth conditions on the performance of InP nanowire solar cells

    Science.gov (United States)

    Cavalli, Alessandro; Cui, Yingchao; Kölling, Sebastian; Verheijen, Marcel A.; Plissard, Sebastien R.; Wang, Jia; Koenraad, Paul M.; Haverkort, Jos E. M.; Bakkers, Erik P. A. M.

    2016-11-01

    Nanowire based solar cells have attracted great attention due to their potential for high efficiency and low device cost. Photovoltaic devices based on InP nanowires now have characteristics comparable to InP bulk solar cells. A detailed and direct correlation of the influence of growth conditions on performance is necessary to improve efficiency further. We explored the effects of the growth temperature, and of the addition of HCl during growth, on the efficiency of nanowire array based solar cell devices. By increasing HCl, the saturation dark current was reduced, and thereby the nanowire solar cell efficiency was enhanced from less than 1% to 7.6% under AM 1.5 illumination at 1 sun. At the same time, we observed that the solar cell efficiency decreased by increasing the tri-methyl-indium content, strongly suggesting that these effects are carbon related.

  11. Influence of growth conditions on the performance of InP nanowire solar cells.

    Science.gov (United States)

    Cavalli, Alessandro; Cui, Yingchao; Kölling, Sebastian; Verheijen, Marcel A; Plissard, Sebastien R; Wang, Jia; Koenraad, Paul M; Haverkort, Jos E M; Bakkers, Erik P A M

    2016-11-11

    Nanowire based solar cells have attracted great attention due to their potential for high efficiency and low device cost. Photovoltaic devices based on InP nanowires now have characteristics comparable to InP bulk solar cells. A detailed and direct correlation of the influence of growth conditions on performance is necessary to improve efficiency further. We explored the effects of the growth temperature, and of the addition of HCl during growth, on the efficiency of nanowire array based solar cell devices. By increasing HCl, the saturation dark current was reduced, and thereby the nanowire solar cell efficiency was enhanced from less than 1% to 7.6% under AM 1.5 illumination at 1 sun. At the same time, we observed that the solar cell efficiency decreased by increasing the tri-methyl-indium content, strongly suggesting that these effects are carbon related.

  12. Solvothermal synthesis of InP quantum dots and their enhanced luminescent efficiency by post-synthetic treatments.

    Science.gov (United States)

    Byun, Ho-June; Lee, Ju Chul; Yang, Heesun

    2011-03-01

    InP quantum dots (QDs) were solvothermally synthesized by using a greener phosphorus source of P(N(CH(3))(2))(3) instead of highly toxic P(TMS)(3) widely used, and subsequently subjected to a size-sorting processing. While as-grown QDs showed an undetectably low emission intensity, post-synthetic treatments such as photo-etching, photo-radiation, and photo-assisted ZnS shell coating gave rise to a substantial increase in emission efficiency due to the effective removal and passivation of surface states. The emission efficiency of the photo-etched QDs was further enhanced by a consecutive UV photo-radiation, attributable to the photo-oxidation at QD surface. Furthermore, a relatively thick ZnS shell on the surface of InP QDs that were surface-modified with hydrophilic ligands beforehand was photochemically generated in an aqueous solution at room temperature. The resulting InP/ZnS core/shell QDs, emitting from blue to red wavelengths, were more efficient than the above photo-treated InP QDs, and their luminescent properties (emission bandwidth and quantum yield) were comparable to those of InP QDs synthesized with P(TMS)(3). Structural, size, and compositional analyses on InP/ZnS QDs were also conducted to elucidate their core/shell structure.

  13. Synthesis, magnetic properties and magnetostriction of Pr(Fe0.75Co0.15Cu0.01Nb0.04B0.051.93 bulk nanocrystalline synthesized under high pressure

    Directory of Open Access Journals (Sweden)

    Cheng-Chao Hu

    2016-05-01

    Full Text Available Bulk nanocrystalline Pr(Fe0.75Co0.15Cu0.01Nb0.04B0.051.93 alloys were synthesized by annealing its melt-spinning ribbons under different pressures and temperatures. It was demonstrated that the average grain size decreases with increasing pressure from 3 GPa to 6 GPa under the same annealing temperature of 853 K but increases with increasing temperature from 823 K to 923 K under the same annealing pressure of 6 GPa. A negative correlation between the coercivity and average grain size was found in the present investigated system. Grain refinement without losing the advantage of volume fraction of magnetostrictive phase offers the sample annealed under 6 GPa and 853 K the optimized magnetostrictive property, which might make it potential material for magnetostrictive application.

  14. A study of the coupling between LO phonons and plasmons in InP p-i-n diodes

    Science.gov (United States)

    Thao, Dinh Nhu

    2017-03-01

    This paper reports a study investigating the coupling between longitudinal optical (LO) phonons and plasmons in InP p-i-n diodes by a numerical simulation. A significant change is observed in the Fourier transform spectra of transient electric field when taking the coupling into account. The findings show two separate peaks instead of a single plasma peak as for non-coupling case. In addition, the bulk-like dispersion relations of the frequencies of those two peaks on the carrier density are found. Therefore, it is proposed that those behaviors manifest the LO phonon-plasmon coupling in the diodes. Also, there is evidence of the peak clipping by the diode itself, a phenomenon not being seen in the bulk InP semiconductor.

  15. High performance photodetectors based on high quality InP nanowires

    Science.gov (United States)

    Yang, Yan-Kun; Yang, Tie-Feng; Li, Hong-Lai; Qi, Zhao-Yang; Chen, Xin-Liang; Wu, Wen-Qiang; Hu, Xue-Lu; He, Peng-Bin; Jiang, Ying; Hu, Wei; Zhang, Qing-Lin; Zhuang, Xiu-Juan; Zhu, Xiao-Li; Pan, An-Lian

    2016-11-01

    In this paper, small diameter InP nanowires with high crystal quality were synthesized through a chemical vapor deposition method. Benefitting from the high crystallinity and large specific surface area of InP nanowires, the simply constructed photodetector demonstrates a high responsivity of up to 1170 A·W-1 and an external quantum efficiency of 2.8×105% with a fast rise time of 110 ms and a fall time of 130 ms, even at low bias of 0.1 V. The effect of back-gate voltage on photoresponse of the device was systematically investigated, confirming that the photocurrent dominates over thermionic and tunneling currents in the whole operation. A mechanism based on energy band theory at the junction between metal and semiconductor was proposed to explain the back-gate voltage dependent performance of the photodetectors. These convincing results indicate that fine InP nanowires will have a brilliant future in smart optoelectronics. Project supported by the National Natural Science Foundation of China (Grant Nos. 51525202, 61574054, 61505051, and 61474040), the Science and Technology Plan of Hunan Province, China (Grant Nos. 2014FJ2001 and 2014TT1004), and the Aid Program for Science and Technology Innovative Research Team in Higher Educational Institutions of Hunan Province, China.

  16. Single-electron tunneling in InP nanowires

    NARCIS (Netherlands)

    De Franceschi, S.; Van Dam, J.A.; Bakkers, E.P.A.M.; Feiner, L.F.; Gurevich, L.; Kouwenhoven, P.

    2003-01-01

    We report on the fabrication and electrical characterization of field-effect devices based on wire-shaped InP crystals grown from Au catalyst particles by a vapor–liquid–solid process. Our InP wires are n-type doped with diameters in the 40–55-nm range and lengths of several micrometers. After being

  17. Facile synthesis of uniform large-sized InP nanocrystal quantum dots using tris(tert-butyldimethylsilyl)phosphine

    OpenAIRE

    2012-01-01

    Colloidal III-V semiconductor nanocrystal quantum dots [NQDs] have attracted interest because they have reduced toxicity compared with II-VI compounds. However, the study and application of III-V semiconductor nanocrystals are limited by difficulties in their synthesis. In particular, it is difficult to control nucleation because the molecular bonds in III-V semiconductors are highly covalent. A synthetic approach of InP NQDs was presented using newly synthesized organometallic phosphorus [P]...

  18. Thermal conductivity of InAs quantum dot stacks using AlAs strain compensating layers on InP substrate

    Energy Technology Data Exchange (ETDEWEB)

    Salman, S. [Universite Europeenne de Bretagne, CNRS, Laboratoire FOTON, INSA, 20 Avenue des buttes de Coeesmes, 35708 Rennes, Cedex 7 (France); Folliot, H., E-mail: herve.folliot@insa-rennes.fr [Universite Europeenne de Bretagne, CNRS, Laboratoire FOTON, INSA, 20 Avenue des buttes de Coeesmes, 35708 Rennes, Cedex 7 (France); Le Pouliquen, J.; Chevalier, N.; Rohel, T.; Paranthoeen, C.; Bertru, N. [Universite Europeenne de Bretagne, CNRS, Laboratoire FOTON, INSA, 20 Avenue des buttes de Coeesmes, 35708 Rennes, Cedex 7 (France); Labbe, C. [CIMAP, CEA/UMR CNRS 6252/ENSICAEN/Universite de Caen Basse Normandie, 6, Boulevard Marechal Juin, 14050 Caen Cedex 4 (France); Letoublon, A.; Le Corre, A. [Universite Europeenne de Bretagne, CNRS, Laboratoire FOTON, INSA, 20 Avenue des buttes de Coeesmes, 35708 Rennes, Cedex 7 (France)

    2012-06-25

    Highlights: Black-Right-Pointing-Pointer The thermal conductivity of InAs on InP (1 1 3)B quantum dots stacks is measured. Black-Right-Pointing-Pointer The growth of a close stack of 100 layers of InAs using AlAs strain compensating layers is presented. Black-Right-Pointing-Pointer New data on the thermal conductivity of InP n-doped susbtrate are given. - Abstract: The growth and thermal conductivity of InAs quantum dot (QD) stacks embedded in GaInAs matrix with AlAs compensating layers deposited on (1 1 3)B InP substrate are presented. The effect of the strain compensating AlAs layer is demonstrated through Atomic Force Microscopy (AFM) and X-ray diffraction structural analysis. The thermal conductivity (2.7 W/m K at 300 K) measured by the 3{omega} method reveals to be clearly reduced in comparison with a bulk InGaAs layer (5 W/m K). In addition, the thermal conductivity measurements of S doped InP substrates and the SiN insulating layer used in the 3{omega} method in the 20-200 Degree-Sign C range are also presented. An empirical law is proposed for the S doped InP substrate, which slightly differs from previously presented results.

  19. AES, EELS and TRIM simulation method study of InP(100 subjected to Ar+, He+ and H+ ions bombardment.

    Directory of Open Access Journals (Sweden)

    Abidri B.

    2012-06-01

    Full Text Available Auger Electron Spectroscopy (AES and Electron Energy Loss Spectroscopy (EELS have been performed in order to investigate the InP(100 surface subjected to ions bombardment. The InP(100 surface is always contaminated by carbon and oxygen revealed by C-KLL and O-KLL AES spectra recorded just after introduction of the sample in the UHV spectrometer chamber. The usually cleaning process of the surface is the bombardment by argon ions. However, even at low energy of ions beam (300 eV indium clusters and phosphorus vacancies are usually formed on the surface. The aim of our study is to compare the behaviour of the surface when submitted to He+ or H+ ions bombardment. The helium ions accelerated at 500V voltage and for 45 mn allow removing contaminants but induces damaged and no stoichiometric surface. The proton ions were accelerated at low energy of 500 eV to bombard the InP surface at room temperature. The proton ions broke the In-P chemical bonds to induce the formation of In metal islands. Such a chemical reactivity between hydrogen and phosphorus led to form chemical species such as PH and PH3, which desorbed from the surface. The chemical susceptibly and the small size of H+ advantaged their diffusion into bulk. Since the experimental methods alone were not able to give us with accuracy the disturbed depth of the target by these ions. We associate to the AES and EELS spectroscopies, the TRIM (Transport and Range of Ions in Matter simulation method in order to show the mechanism of interaction between Ar+, He+ or H+ ions and InP and determine the disturbed depth of the target by argon, helium or proton ions.

  20. Temperature Studies of Single InP Quantum Dots

    Science.gov (United States)

    1999-06-18

    UNCLASSIFIED Defense Technical Information Center Compilation Part Notice ADP012858 TITLE: Temperature Studies of Single InP Quantum Dots DISTRIBUTION...34 QWR/QD.07 St Petersburg, Russia, June 14-18, 1999 © 1999 loffe Institute Temperature studies of single InP quantum dots Valdry Zwiller, Mats-Erik...Information on the size and geometry of our self-assembled InP Quantum Dots grown on GamnP lattice matched to GaAs has been published elsewhere -I

  1. Lightweight InP Solar Cells for Space Applications Project

    Data.gov (United States)

    National Aeronautics and Space Administration — The innovation in this Phase II SBIR is the development of a technology which will enable the manufacture of a lightweight, low cost, high radiation resistance InP...

  2. Quantum size effects in InP inner film fiber

    Institute of Scientific and Technical Information of China (English)

    WANG Ting-yun; WANG Ke-xin; LU Jun

    2005-01-01

    Based on the semiconductor amplifiing properties and the structure of optical fiber wave guide an InP inner fiber is developed.The InP inner film fiber can be employed as a small size,broadband,and ultra-short fiber amplifier.The quantum size effects of the fiber are emphatically investigated in the work.Using the experimental data,we compare the effective mass approximation (EMA) with effective parameterization within the tight binding (EPTB) models for the accurate description of the quantum size effects in InP.The results show that the EPTB model provides an excellent description of band gap variation over a wide range of sizes.The Bohr diameter and the effective Rydberg energy of InP are calculated.Finally,the amplifiing properties of the InP inner film fiber are discussed due to the quantum size effects.

  3. Donor Behavior in High-Purity Epitaxial InP.

    Science.gov (United States)

    1980-10-02

    Thermodynamic Analysis of L InP and GaAs Deposition", Journal of Phyjsica Chemical Solids 36, 111, (1975). 17. 0. Levenspiel , "Chemical Reaction Engineering",r John Wiley and Sons, NY, NY, (1972).

  4. Lightweight InP Solar Cells for Space Applications Project

    Data.gov (United States)

    National Aeronautics and Space Administration — The innovation in this Phase I SBIR is the development of a technology which will enable the manufacture of a lightweight, low cost, InP based compound semiconductor...

  5. InP Heterojunction Bipolar Transistor Amplifiers to 255 GHz

    Science.gov (United States)

    Radisic, Vesna; Sawdai, Donald; Scott, Dennis; Deal, William; Dang, Linh; Li, Danny; Cavus, Abdullah; To, Richard; Lai, Richard

    2009-01-01

    Two single-stage InP heterojunction bipolar transistor (HBT) amplifiers operate at 184 and 255 GHz, using Northrop Grumman Corporation s InP HBT MMIC (monolithic microwave integrated circuit) technology. At the time of this reporting, these are reported to be the highest HBT amplifiers ever created. The purpose of the amplifier design is to evaluate the technology capability for high-frequency designs and verify the model for future development work.

  6. Deep level defects in high temperature annealed InP

    Institute of Scientific and Technical Information of China (English)

    DONG Zhiyuan; ZHAO Youwen; ZENG Yiping; DUAN Manlong; LIN Lanying

    2004-01-01

    Deep level defects in high temperature annealed semi-conducting InP have been studied by deep level transient spectroscopy (DLTS). There is obvious difference in the deep defects between as-grown InP, InP annealed in phosphorus ambient and iron phosphide ambient, as far as their quantity and concentration are concerned. Only two defects at 0.24 and 0.64 eV can be detected in InP annealed iniron phosphide ambient,while defects at 0.24, 0.42, 0.54 and 0.64 eV have been detected in InP annealed in phosphorus ambient, in contrast to two defects at 0.49 and 0.64 eV or one defect at 0.13eV in as-grown InP. A defect suppression phenomenon related to iron diffusion process has been observed. The formation mechanism and the nature of the defects have been discussed.

  7. InP tunable ring resonator filters

    Science.gov (United States)

    Tauke-Pedretti, A.; Vawter, G. A.; Skogen, E. J.; Peake, G.; Overberg, M.; Alford, C.; Torres, D.; Cajas, F.

    2013-03-01

    Optical channelizing filters with narrow linewidth are of interest for optical processing of microwave signals. Fabrication tolerances make it difficult to place exactly the optical resonance frequency within the microwave spectrum as is required for many applications. Therefore, efficient tuning of the filter resonance is essential. In this paper we present a tunable ring resonator filter with an integrated semiconductor optical amplifier (SOA) fabricated on an InP based photonic integrated circuit (PIC) platform. The ring resonance is tuned over 37 GHz with just 0.2 mA of current injection into a passive phase section. The use of current injection is often more efficient than thermal tuning using heaters making them useful for low-power applications. The single active ring resonator has an electrical FWHM of 1.5 GHz and shows greater than 16 dB of extinction between on and off resonance. The effects of SOA internal ring gain and induced passive loss on extinction and linewidth will be shown. Agreement between experimentally demonstrated devices and simulations are shown. The integration of the active and passive regions is done using quantum well intermixing and the resonators utilize buried heterostructure waveguides. The fabrication process of these filters is compatible with the monolithic integration of DBR lasers and high speed modulators enabling single chip highly functional PICs for the channelizing of RF signals.

  8. Electron guns and collectors developed at INP for electron cooling devices

    Energy Technology Data Exchange (ETDEWEB)

    Sharapa, A.N.; Shemyakin, A.V. [Institute of Nuclear Physics, Novosibirsk (Russian Federation)

    1997-09-01

    Institute of Nuclear Physics (INP) has a rich experience in designing electron guns and collectors for electron cooling devices. This paper is a review of the experience of several INP research groups in this field. Some results obtained at INP for systems without a guiding magnetic field are also discussed.

  9. Absorption enhancement by textured InP in solar cells

    Science.gov (United States)

    Yun, Seokhun; Ji, Taeksoo

    2016-03-01

    III-V compound semiconductors seem to be the ideal materials for photovoltaic devices because they exhibit fast carrier velocity. III-V compound semiconductors, however, are unfavorable materials to be commercialized on large scale photovoltaic devices because of their high material cost. The textured surface shows the potential to increase the performance of solar cells because of the properties such as high absorption and longer light path length. These properties can overcome the disadvantage of the III-V compound semiconductors through thin thickness use when producing solar cells. In this study, we demonstrate that textured surfaces on InP formed by nano-sphere lithography and plasma etching process can enhance the absorption effectively in comparison with planar surface. The power conversion efficiency of InP solar cells using the textured InP and the aluminum doped zinc oxide was achieved up to 8%.

  10. InP concentrator solar cells for space applications

    Science.gov (United States)

    Ward, J. S.; Wanlass, M. W.; Coutts, T. J.; Emery, K. A.

    1991-01-01

    The design, fabrication, and characterization of high-performance, n(+)/p InP shallow-homojunction (SHJ) concentrator solar cells is described. The InP device structures were grown by atmospheric-pressure metalorganic vapor phase epitaxy (APMOVPE). A preliminary assessment of the effects of grid collection distance and emitter sheet resistance on cell performance is presented. At concentration ratios of over 100, cells with AM0 efficiencies in excess of 21 percent at 25 C and 19 percent at 80 C are reported. These results indicate that high-efficiency InP concentrator cells can be fabricated using existing technologies. The performance of these cells as a function of temperature is discussed, and areas for future improvement are outlined.

  11. Palladium nanoparticles on InP for hydrogen detection

    Directory of Open Access Journals (Sweden)

    Zdansky Karel

    2011-01-01

    Full Text Available Abstract Layers of palladium (Pd nanoparticles on indium phosphide (InP were prepared by electrophoretic deposition from the colloid solution of Pd nanoparticles. Layers prepared by an opposite polarity of deposition showed different physical and morphological properties. Particles in solution are separated and, after deposition onto the InP surface, they form small aggregates. The size of the aggregates is dependent on the time of deposition. If the aggregates are small, the layer has no lateral conductance. Forward and reverse I-V characteristics showed a high rectification ratio with a high Schottky barrier height. The response of the structure on the presence of hydrogen was monitored.

  12. Solvothermal synthesis of InP quantum dots.

    Science.gov (United States)

    Nag, Angshuman; Sarma, D D

    2009-09-01

    We report an efficient and fast solvothermal route to prepare highly crystalline monodispersed InP quantum dots. This solvothermal route, not only ensures inert atmosphere, which is strictly required for the synthesis of phase pure InP quantum dots but also allows a reaction temperature as high as 430 degrees C, which is otherwise impossible to achieve using a typical solution chemistry; the higher reaction temperature makes the reaction more facile. This method also has a judicious control over the size of the quantum dots and thus in tuning the bandgap.

  13. Synthesis of Cu-doped InP nanocrystals (d-dots) with ZnSe diffusion barrier as efficient and color-tunable NIR emitters.

    Science.gov (United States)

    Xie, Renguo; Peng, Xiaogang

    2009-08-05

    Efficient Cu-doped InP quantum dots (Cu:InP d-dots) emitters were successfully synthesized by epitaxial growth of a ZnSe diffusion barrier for the dopants. The Cu dopant emission of the Cu:InP/ZnSe core/shell d-dots covered the important red and near-infrared (NIR) window for biomedical applicaitons, from 630 to 1100 nm, by varying the size of the InP host nanocrystals. These new d-dots emitters not only compensate for the emission wavelength of the existing noncadmium d-dots emitters, Cu- and Mn-doped ZnSe d-dots (450-610 nm), but also offer a complete series of efficient nanocrystal emitters based on InP nanocrystals. The one-pot synthetic scheme for the formation of Cu:InP/ZnSe core/shell d-dots was successfully established by systematically studying the doping process, the dopant concentration-dependent photophysical properties, and the dopant diffusion during shell epitaxy, etc. Complete elimination of InP bandgap emission and efficient pure dopant emission (with photoluminescence quantum yield as high as between 35-40%) of the core/shell d-dots were achieved by optimizing the final doping level and the diffusion barrier thickness.

  14. Switching dynamics in InP photonic-crystal nanocavity

    DEFF Research Database (Denmark)

    Yu, Yi; Palushani, Evarist; Heuck, Mikkel;

    2016-01-01

    In this paper, we presented switching dynamic investigations on an InP photonic-crystal (PhC) nanocavity structure using homodyne pump-probe measurements. The measurements were compared with simulations based on temporal nonlinear coupled mode theory and carrier rate equations for the dynamics...

  15. 2D InP photonic crystal fabrication process development

    NARCIS (Netherlands)

    Rong, B.; Van der Drift, E.; Van der Heijden, R.W.; Salemink, H.W.M.

    2006-01-01

    We have developed a reliable process to fabricate high quality 2D air-hole and dielectric column InP photonic crystals with a high aspect ratio on a STS production tool using ICP N2+Cl2 plasma. The photonic crystals have a triangular lattice with lattice constant of 400 nm and air-hole and dielectri

  16. Surface Plasmons on Highly Doped InP

    DEFF Research Database (Denmark)

    Panah, Mohammad Esmail Aryaee; Ottaviano, Luisa; Semenova, Elizaveta

    2016-01-01

    Silicon doped InP is grown by metal-organic vapor phase epitaxy (MOVPE) using optimized growth parameters to achieve high free carrier concentration. Reflectance of the grown sample in mid-IR range is measured using FTIR and the result is used to retrieve the parameters of the dielectric function...

  17. Experiences with digital processing of images at INPE

    Science.gov (United States)

    Mascarenhas, N. D. A. (Principal Investigator)

    1984-01-01

    Four different research experiments with digital image processing at INPE will be described: (1) edge detection by hypothesis testing; (2) image interpolation by finite impulse response filters; (3) spatial feature extraction methods in multispectral classification; and (4) translational image registration by sequential tests of hypotheses.

  18. c-Myc inhibits TP53INP1 expression via promoter methylation in esophageal carcinoma

    Energy Technology Data Exchange (ETDEWEB)

    Weng, Wenhao; Yang, Qinyuan [Department of Laboratory Medicine, Shanghai Tenth People' s Hospital, Tongji University School of Medicine, Shanghai 200072 (China); Huang, Miaolong [Department of Thoracic Surgery, Yuebei People' s Hospital, Shaoguan, Guangdong 512026 (China); Qiao, Yongxia [Department of Preventive Medicine, Tongji University, Shanghai City 200092 (China); Xie, Yuan; Yu, Yongchun [Department of Laboratory Medicine, Shanghai Tenth People' s Hospital, Tongji University School of Medicine, Shanghai 200072 (China); Jing, An, E-mail: Anjing77@gmail.com [Department of Thoracic Surgery, Yuebei People' s Hospital, Shaoguan, Guangdong 512026 (China); Institute of Cancer Research, Southern Medical University, Guangzhou 510515 (China); Li, Zhi, E-mail: lizhiweng2010@163.com [Department of Laboratory Medicine, Shanghai Tenth People' s Hospital, Tongji University School of Medicine, Shanghai 200072 (China)

    2011-02-11

    Research highlights: {yields} TP53INP1 expression is down-regulated in esophageal carcinoma and is associated with CGI-131 methylation. {yields} Inhibition of CGI-131 methylation upregulates TP53INP1 expression in ESCC cell lines. {yields} Ectopic expression of TP53INP1 inhibits growth of ESCC cells by inducing apoptosis and inhibiting cell cycle progression. {yields} c-Myc binds to the promoter of TP53INP1 in vivo and vitro and recruits DNMT3A to TP53INP1 promoter for CGI-131 methylation. -- Abstract: Tumor protein p53-induced nuclear protein 1 (TP53INP1) is a well known stress-induced protein that plays a role in both cell cycle arrest and p53-mediated apoptosis. Loss of TP53INP1 expression has been reported in human melanoma, breast carcinoma, and gastric cancer. However, TP53INP1 expression and its regulatory mechanism in esophageal squamous cell carcinoma (ESCC) remain unclear. Our findings are in agreement with previous reports in that the expression of TP53INP1 was downregulated in 28% (10/36 cases) of ESCC lesions, and this was accompanied by significant promoter methylation. Overexpression of TP53INP1 induced G1 cell cycle arrest and increased apoptosis in ESCC cell lines (EC-1, EC-109, EC-9706). Furthermore, our study showed that the oncoprotein c-Myc bound to the core promoter of TP53INP1 and recruited DNA methyltransferase 3A to methylate the local promoter region, leading to the inhibition of TP53INP1 expression. Our findings revealed that TP53INP1 is a tumor suppressor in ESCC and that c-Myc-mediated DNA methylation-associated silencing of TP53INP1 contributed to the pathogenesis of human ESCC.

  19. Waveform synthesizer

    Science.gov (United States)

    Franks, Larry A.; Nelson, Melvin A.

    1981-01-01

    A method of producing optical and electrical pulses of desired shape. An optical pulse of arbitrary but defined shape illuminates one end of an array of optical fiber waveguides of differing lengths to time differentiate the input pulse. The optical outputs at the other end of the array are combined to form a synthesized pulse of desired shape.

  20. Native-oxide-based selective area growth of InP nanowires via metal-organic molecular beam epitaxy mediated by surface diffusion.

    Science.gov (United States)

    Calahorra, Yonatan; Greenberg, Yaakov; Cohen, Shimon; Ritter, Dan

    2012-06-22

    The growth of InP nanowires on an InP(111) B substrate is reported. The substrate native oxide was not removed from the surface prior to growth. Nanowires were grown at 400 °C from gold catalysts in a selective area manner, without bulk growth. Unlike SiO(2)-based metal-organic molecular beam epitaxy selective area growth, the growth reported here is mediated by surface diffusion with a characteristic diffusion length of 4 μm, about an order of magnitude larger than values for diffusion on bare substrates. A pre-growth heating treatment at 450 °C was found to increase the yield of nanowire nucleation from the gold catalysts.

  1. Atomistic comparative study of VUV photodeposited silicon nitride on InP(100) by simulation and atomic force microscopy

    Science.gov (United States)

    Flicstein, J.; Guillonneau, E.; Marquez, J.; How Kee Chun, L. S.; Maisonneuve, D.; David, C.; Wang, Zh.; Palmier, J. F.; Courant, J. L.

    2000-02-01

    We report on an accurate validation of a new Monte Carlo three-dimensional model. Simulations up to 1200 Å layer thickness have been carried out for amorphous thin film layers of SiN:H deposited at low temperature (400-650 K) on (100) InP, by vacuum ultraviolet (VUV, ˜185 nm)-induced chemical vapor deposition (CVD). The computer simulations in the mesoscopic-submicronic range are compared with atomic force microscopy and index of refraction measurements. The reconstituted surface roughness and the voids discrete representations of the bulk are found to be in good agreement with these measurements. Simultaneously at around 450 K (at ˜175°C), thermal characteristic evolution of the both surface roughness and bulk porosity showed a transition from rough to smooth deposition and from low to high density.

  2. Surface characterization of InP using photoluminescence

    Science.gov (United States)

    Chang, R. R.; Iyer, R.; Lile, D. L.

    1987-01-01

    Photoluminescence (PL) measurements have been performed on InP samples in situ during various surface treatments including chemical etching, wet anodization, and low-pressure chemical vapor deposition. It was found, in agreement with previously published results, that the magnitude of the PL signal varies markedly with surface treatment due presumably to changes in either surface-state density, and/or surface potential. In an attempt to assess the effectiveness of this noninvasive method as a tool for characterizing and monitoring the progressive development of a semiconductor surface during processing, a number of experiments on InP have been performed. The results indicate that although some uncertainty may exist in assigning a mechanism for the PL change in any given experiment, the general trend appears to be that surface degradation results in a reduced signal. As a result, process steps which enhance the PL intensity are likely to be beneficial in the preparation of a high-quality interface.

  3. A single crystalline InP nanowire photodetector

    Science.gov (United States)

    Yan, Xin; Li, Bang; Wu, Yao; Zhang, Xia; Ren, Xiaomin

    2016-08-01

    Single crystalline nanowires are critical for achieving high-responsivity, high-speed, and low-noise nanoscale photodetectors. Here, we report a metal-semiconductor-metal photodetector based on a single crystalline InP nanowire. The nanowires are grown by a self-catalyzed method and exhibit stacking-fault-free zinc blende crystal structure. The nanowire exhibits a typical n-type semiconductor property and shows a low room temperature dark current of several hundred pA at moderate biases. A photoresponsivity of 6.8 A/W is obtained at a laser power density of 0.2 mW/cm2. This work demonstrates that single crystalline InP nanowires are good candidates for future optoelectronic device applications.

  4. Simulation of INPE's printed circuit laboratory production line

    Science.gov (United States)

    Torgogomes, Arthur

    1988-05-01

    The development of a tool intended to improve, plan, monitor, and control INPE's Printed Circuit Laboratory Production Line is presented. A manipulatable computer model was developed. The model simulates the behavior of the production line elements, when established demand is given. A discrete simulation model of stochastic nature was created departing from study and comprehension of technical and operational characteristics. The system was modeled encompassing physical and chronological dimensions. The computer model utilizes the GASP 4 language simulation. The source program for this language was worked out to make possible such an application. The model was tested and proved operational in a 6800 Burroughs computer. The major significant results that the model provides information on necessary time between an order placed with the Laboratory and the final product ready for delivery to the client; also statistics of waiting time elapsed and starting time for production. Currently, this program is operational. It is being successfully utilized by INPE's Printed Laboratory Production Line.

  5. Azimuthally polarized cathodoluminescence from InP nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Brenny, B. J. M.; Osorio, C. I.; Polman, A., E-mail: polman@amolf.nl [Center for Nanophotonics, FOM Institute AMOLF, Science Park 104, 1098 XG Amsterdam (Netherlands); Dam, D. van [COBRA Research Institute, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven (Netherlands); Gómez Rivas, J. [COBRA Research Institute, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven (Netherlands); FOM Institute DIFFER, P.O. Box 6336, 5600 HH Eindhoven (Netherlands)

    2015-11-16

    We determine the angle and polarization dependent emission from 1.75 µm and 2.50 µm long InP nanowires by using cathodoluminescence polarimetry. We excite the vertical wires using a 5 keV electron beam, and find that the 880 nm bandgap emission shows azimuthally polarized rings, with the number of rings depending on the wire height. The data agree well with a model in which spontaneous emission from the wire emitted into the far field interferes with emission reflected off the substrate. From the model, the depth range from which the emission is generated is found to be up to 400 nm below the top surface of the wires, well beyond the extent of the primary electron cloud. This enables a probe of the carrier diffusion length in the InP nanowires.

  6. Quantum confinement of excitons in wurtzite InP nanowires

    Science.gov (United States)

    Pemasiri, K.; Jackson, H. E.; Smith, L. M.; Wong, B. M.; Paiman, S.; Gao, Q.; Tan, H. H.; Jagadish, C.

    2015-05-01

    Exciton resonances are observed in photocurrent spectra of 80 nm wurtzite InP nanowire devices at low temperatures, which correspond to transitions between the A, B, and C valence bands and the lower conduction band. Photocurrent spectra for 30 nm WZ nanowires exhibit shifts of the exciton resonances to higher energy, which are consistent with finite element calculations of wavefunctions of the confined electrons and holes for the various bands.

  7. Surface processes during purification of InP quantum dots

    OpenAIRE

    2014-01-01

    Recently, a new simple and fast method for the synthesis of InP quantum dots by using phosphine as phosphorous precursor and myristic acid as surface stabilizer was reported. Purification after synthesis is necessary to obtain samples with good optical properties. Two methods of purification were compared and the surface processes which occur during purification were studied. Traditional precipitation with acetone is accompanied by a small increase in photoluminescence. It occurs that during ...

  8. Fabrication of ordered arrays of InP microstructures by wet chemical etching with Au masks.

    Science.gov (United States)

    Su, G; Guo, Q; Palmer, R E

    2002-12-01

    Ordered arrays of InP microstructures have been fabricated on InP(001) substrates by wet chemical etching in aqueous HCl with patterned Au masks. The masks were produced by Au deposition through copper grids or a monolayer of polystyrene microspheres. Square InP mesas (20 x 20 microns) and pillars (approximately 100 nm in both diameter and height) were both produced and characterized by scanning electron microscopy and atomic force microscopy.

  9. [Characterizations of InP in terahertz region].

    Science.gov (United States)

    Zhang, Cai-Hong; Wang, Yuan-Yuan; Ma, Jin-Long; Jin, Biao-Bing; Xu, Wei-Wei; Kang, Lin; Chen, Jian; Wu, Pei-Heng

    2009-08-01

    Terahertz time-domain spectroscopy (THz-TDS), which directly measures the THz wave's temporal electric field, can give the amplitude and phase of the THz wave pulse simultaneously. THz-TDS is attracting more attention among scientists. InP with short carrier average collision time and low effective mass is growing up as one of the best photoconductive materials for emitting and detecting THz waves. An n-type InP of 0.35 omega x cm was characterized over the range from 0.2 to 4 THz at room temperature in the present paper with THz time-domain spectroscopy, which was placed in a closed box purged with dry nitrogen gas. Some THz optical properties, such as complex refractive index, dielectric constant, and conductivity, were extracted, based on more exact iterative method with new initial function. Drude model was also applied for simulation, which fitted well with the experimental results. Finally, the carrier average collision time, density and mobility of the InP were also characterized.

  10. Electrical properties of oxygen ion-implanted InP

    Science.gov (United States)

    He, L.; Anderson, W. A.

    1992-10-01

    The effect of oxygen ion implantation on defect levels and the electrical properties of undoped InP ( n-type) and Sn-doped InP have been investigated as a function of postimplant annealing at temperatures of 300 and 400° C. The surface interruption by ion bombardment was studied by a non-invasive optical technique—photoreflectance (PR) spectroscopy. Current-voltage (I-V) characterization and deep level transient spectros-copy (DLTS) were carried out. The free carrier compensation mechanism was studied from the microstructure behavior of defect levels associated with O+ implantation. Free carriers may be trapped in both residual and ion-bombardment-induced defect sites. Rapid thermal annealing (RTA) performed at different temperatures showed that if residual traps were removed by annealing, the compensation efficiency will be enhanced. Post-implant RTA treatment showed that at the higher temperature (400°C), trapped carriers may be re-excited, resulting in a weakened compensation. Comparing the results of undoped and Sn-doped InP indicated that the carrier compensation effect is substrate doping dependent.

  11. Modelling of OPNMR phenomena using photon energy-dependent in GaAs and InP

    Science.gov (United States)

    Wheeler, Dustin D.; Willmering, Matthew M.; Sesti, Erika L.; Pan, Xingyuan; Saha, Dipta; Stanton, Christopher J.; Hayes, Sophia E.

    2016-12-01

    We have modified the model for optically-pumped NMR (OPNMR) to incorporate a revised expression for the expectation value of the z-projection of the electron spin, and apply this model to both bulk GaAs and a new material, InP. This expression includes the photon energy dependence of the electron polarization when optically pumping direct-gap semiconductors in excess of the bandgap energy, Eg . Rather than using a fixed value arising from coefficients (the matrix elements) for the optical transitions at the k = 0 bandedge, we define a new parameter, Sopt (Eph) . Incorporating this revised element into the expression for , we have simulated the photon energy dependence of the OPNMR signals from bulk semi-insulating GaAs and semi-insulating InP. In earlier work, we matched calculations of electron spin polarization (alone) to features in a plot of OPNMR signal intensity versus photon energy for optical pumping (Ramaswamy et al., 2010). By incorporating an electron spin polarization which varies with pump wavelength into the penetration depth model of OPNMR signal, we are able to model features in both III-V semiconductors. The agreement between the OPNMR data and the corresponding model demonstrates that fluctuations in the OPNMR intensity have particular sensitivity to light hole-to-conduction band transitions in bulk systems. We provide detailed plots of the theoretical predictions for optical pumping transition probabilities with circularly-polarized light for both helicities of light, broken down into illustrative plots of optical magnetoabsorption and spin polarization, shown separately for heavy-hole and light-hole transitions. These plots serve as an effective roadmap of transitions, which are helpful to other researchers investigating optical pumping effects.

  12. InP HEMT Integrated Circuits for Submillimeter Wave Radiometers in Earth Remote Sensing

    Science.gov (United States)

    Deal, William R.; Chattopadhyay, Goutam

    2012-01-01

    The operating frequency of InP integrated circuits has pushed well into the Submillimeter Wave frequency band, with amplification reported as high as 670 GHz. This paper provides an overview of current performance and potential application of InP HEMT to Submillimeter Wave radiometers for earth remote sensing.

  13. Silicon doped InP as an alternative plasmonic material for mid-infrared

    DEFF Research Database (Denmark)

    Panah, Mohammad Esmail Aryaee; Han, Li; Christensen, Dennis Valbjørn;

    2016-01-01

    Silicon-doped InP is grown on top of semiinsulating iron-doped and sulfur-doped InP substrates by metalorganic vapor phase epitaxy (MOVPE), and the growth parameters are adjusted to obtain various free carrier concentrations from 1.05×1019 cm-3 up to 3.28×1019 cm-3. Midinfrared (IR) reflection sp...

  14. Lasers in InP generic photonic integration technology platforms

    Science.gov (United States)

    Latkowski, Sylwester; Lenstra, Daan

    2015-04-01

    A review is given of a number of lasers in a form of photonic integrated circuits realized on InP substrate using a generic integration approach. The potential of these photonic circuits lies in their compactness, low power consumption, and significant reduction of fabrication cost by realization in generic foundry runs. Generic integration platforms offer the possibility of realizing functionally advanced photonic circuits using combinations of just a few standardized and parameterized building blocks. This vibrant field opens new doors to innovative product development for SMEs as well as curiosity-driven research.

  15. An ab initio study of the polytypism in InP

    Science.gov (United States)

    Dacal, Luis C. O.; Cantarero, A.

    2016-09-01

    The existence of polytypism in semiconductor nanostructures gives rise to the appearance of stacking faults which many times can be treated as quantum wells. In some cases, despite of a careful growth, the polytypism can be hardly avoided. In this work, we perform an ab initio study of zincblende stacking faults in a wurtzite InP system, using the supercell approach and taking the limit of low density of narrow stacking faults regions. Our results confirm the type II band alignment between the phases, producing a reliable qualitative description of the band gap evolution along the growth axis. These results show an spacial asymmetry in the zincblende quantum wells, that is expected due to the fact that the wurtzite stacking sequence (ABAB) is part of the zincblende one (ABCABC), but with an unexpected asymmetry between the valence and the conduction bands. We also present results for the complex dielectric function, clearly showing the influence of the stacking on the homostructure values and surprisingly proving that the correspondent bulk results can be used to reproduce the polytypism even in the limit we considered.

  16. Segregation of antimony in InP in MOVPE

    Energy Technology Data Exchange (ETDEWEB)

    Weeke, Stefan

    2008-07-01

    In this work the segregation of antimony in indium phosphide in metal organic vapour phase epitaxy (MOVPE)was systematically investigated. Therefore phosphine stabilized InP surfaces were treated with tri-methyl-antimony (TMSb) in MOVPE. An antimony rich Sb/InP surface was established, showing a typical spectra for the antimonides observed in reflectance anisotropy spectroscopy (RAS).Adsorption and desorption of antimony are investigated, as well as the incorporation of Sb during overgrowth of the Sb/InP surface with InP. Therefore the growth parameters temperature, TMSb partial pressure and treatment time are varied and their influence investigated. The experiments are monitored in-situ with RAS, the achieved data is correlated with ex-situ characterisation such as X-ray diffraction (XRD) and secondary ion mass spectroscopy (SIMS). It is shown that under treatment with TMSb a stable Sb/InP surface is formed within seconds, which does not change under further TMSb treatment. This process is rarely influenced by the TMSb partial pressure. On the contrary, the desorption of Sb is a very slow process. Two main processes can be distinguished: The desorption of excess Sb from the surface and the formation of the MOVPE prepared InP (2 x 1) surface. The reaction velocity of adsorption and desorption increases with temperature. Above a critical value the increase of TMSb partial pressure has no influence on the time for desorption. During overgrowth of the Sb/InP surface the opposite temperature dependence is observed: with increasing growth temperature the typical spectra for antimonides is observed longer. An analysis of the grown samples with XRD and SIMS showed the formation of an InPSb double quantum well. One layer is formed at the interface, the second one 50 nm-120 nm deep in the InP. The location of the 2nd InPSb layer can be correlated with the vanishing of the Sb signature in RAS. The distance between the quantum wells increases with growth temperature, until it

  17. Undoped semi-insulating indium phosphide (InP) and its applications

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    @@ During the past several years, the research and development of InP material has made great progress due to serving as the substrate for most optoelectronic devices operating at the communications wavelength of 1.31 and 1.55 (m. At present, InP has become an important semiconductor material together with Si and GaAs. When compared to GaAs, InP has higher electron velocity, higher radiation hardness and better heat-conducting property. The advantage of InP crystal material allows higher frequency operation and lower power requirements. Therefore, InPis widely being used for the manufacture of microwave devices, high-frequency devices and optoelectronic integrated circuits (OEICs) which are indispensable for wireless technology, satellite communications[1-3]. Although n-type and p-type InP can meet actual needs, semi-insulating InP substrates remain to be improved due to their poor uniformity and consistency. For this reason, several possible approaches have been reported to the preparation of SI InP by wafer annealing under different conditions[4-9].

  18. A 311-GHz Fundamental Oscillator Using InP HBT Technology

    Science.gov (United States)

    Gaier, Todd; Fung, King Man; Samoska, Lorene; Radisic, Vesna; Sawdai, Donald; Scott, Dennis; Deal, W.R.

    2010-01-01

    This oscillator uses a single-emitter 0.3- m InP heterojunction bipolar transistor (HBT) device with maximum frequency of oscillation (fmax) greater than 500 GHz. Due to high conductor and substrate losses at submillimeterwave frequencies, a primary challenge is to efficiently use the intrinsic device gain. This was done by using a suitable transmission-line media and circuit topology. The passive components of the oscillator are realized in a twometal process with benzocyclobutene (BCB) used as the primary transmission line dielectric. The circuit was designed using microstrip transmission lines. The oscillator is implemented in a common-base topology due to its inherent instability, and the design includes an on-chip resonator, outputmatching circuitry, and an injection-locking port, the port being used to demonstrate the injection-locking prin ciple. A free-running frequency of 311.6 GHz has been measured by down-converting the signal. Ad di tionally, injection locking has been successfully demonstrated with up to 17.8 dB of injection-locking gain. The injection-locking reference signal is generated using a 2 20 GHz frequency synthesizer, followed by a doubler, active tripler, a W-band amplifier, and then a passive tripler. Therefore, the source frequency is multiplied 18 times to obtain a signal above 300 GHz that can be used to injection lock the oscillator. Measurement shows that injection locking has improved the phase noise of the oscillator and can be also used for synchronizing a series of oscillators. A signal conductor is implemented near the BCP -InP interface and the topside of the BCB layer is fully metallized as a signal ground. Because the fields are primarily constrained in the lower permittivity BCB region, this type of transmission line is referred to as an inverted microstrip. In addition, both common-emitter and commonbase circuits were investigated to determine optimum topology for oscillator design. The common -base topology required smaller

  19. Highly doped InP as a low loss plasmonic material for mid-IR region

    DEFF Research Database (Denmark)

    Panah, Mohammad Esmail Aryaee; Takayama, Osamu; Morozov, S. V.

    2016-01-01

    We study plasmonic properties of highly doped InP in the mid-infrared (IR) range. InP was grown by metal-organic vapor phase epitaxy (MOVPE) with the growth conditions optimized to achieve high free electron concentrations by doping with silicon. The permittivity of the grown material was found...... by the excitation of surface plasmon-polaritons in a periodically structured epilayer. Characterization shows good agreement between the theory and experimental results and confirms that highly doped InP is an effective plasmonic material aiming it for applications in the mid-IR wavelength range....

  20. Systems and methods for advanced ultra-high-performance InP solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Wanlass, Mark

    2017-03-07

    Systems and Methods for Advanced Ultra-High-Performance InP Solar Cells are provided. In one embodiment, an InP photovoltaic device comprises: a p-n junction absorber layer comprising at least one InP layer; a front surface confinement layer; and a back surface confinement layer; wherein either the front surface confinement layer or the back surface confinement layer forms part of a High-Low (HL) doping architecture; and wherein either the front surface confinement layer or the back surface confinement layer forms part of a heterointerface system architecture.

  1. [Managment system in safety and health at work organization. An Italian example in public sector: Inps].

    Science.gov (United States)

    Di Loreto, G; Felicioli, G

    2010-01-01

    The Istituto Nazionale della Previdenza Sociale (Inps) is one of the biggest Public Sector organizations in Italy; about 30.000 people work in his structures. Fifteen years ago, Inps launched a long term project with the objective to create a complex and efficient safety and health at work organization. Italian law contemplates a specific kind of physician working on safety and health at work, called "Medico competente", and 85 Inps's physicians work also as "Medico competente". This work describes how IT improved coordination and efficiency in this occupational health's management system.

  2. Preliminary design of the INPE's Solar Vector Magnetograph

    CERN Document Server

    Vieira, L E A; Lago, A Dal; Wrasse, C; Echer, E; Guarnieri, F L; Cardoso, F Reis; Guerrero, G; Costa, J Rezende; Palacios, J; Balmaceda, L; Alves, L Ribeiro; da Silva, L; Costa, L L; Sampaio, M; Soares, M C Rabello; Barbosa, M; Domingues, M; Rigozo, N; Mendes, O; Jauer, P; Dallaqua, R; Branco, R H; Stekel, T; Gonzalez, W; Kabata, W

    2016-01-01

    We describe the preliminary design of a magnetograph and visible-light imager instrument to study the solar dynamo processes through observations of the solar surface magnetic field distribution. The instrument will provide measurements of the vector magnetic field and of the line-of-sight velocity in the solar photosphere. As the magnetic field anchored at the solar surface produces most of the structures and energetic events in the upper solar atmosphere and significantly influences the heliosphere, the development of this instrument plays an important role in reaching the scientific goals of The Atmospheric and Space Science Coordination (CEA) at the Brazilian National Institute for Space Research (INPE). In particular, the CEA's space weather program will benefit most from the development of this technology. We expect that this project will be the starting point to establish a strong research program on Solar Physics in Brazil. Our main aim is acquiring progressively the know-how to build state-of-art sol...

  3. Photoluminescence of ingaas/inp grown by molecular beam epitaxy

    Directory of Open Access Journals (Sweden)

    Harmand Jean Christophe

    2004-01-01

    Full Text Available Photoluminescence (PL measurements due to temperature and excitation power were carried out in as function of sample containing a In0,53Ga0,47. As layer, grown by Molecular Beam Epitaxy on an InP substrate. The origins of the several luminescence processes observed at low temperature were determined by studying their different behaviors with increasing temperature and excitation power and by comparing the results with the data found in the literature. The following transitions have been identified: one transition involving localized excitons and two transitions involving acceptor impurities. A review of the main works published in the literature related to the optical transitions observed at low temperature in InGaAs/InP is also presented.

  4. Electrical detection of spin hyperpolarization in InP

    Science.gov (United States)

    Caspers, Christian; Ansermet, Jean-Philippe

    2014-09-01

    The electrical detection of surface spin polarization in Indium Phosphide (InP) is demonstrated. Using a planar four-terminal architecture on top of semi-insulating Fe:InP (001) wafers, optical orientation is separated from electrical detection. Spin filter tunnel contacts consisting of InP/oxide/Co reveal significant asymmetries in the differential resistance upon helicity change of the optical pumping. The iron-rich tunnel oxide provides the main spin selection mechanism. A reproducible helicity-dependent asymmetry as high as 18% could be observed at T = 55 K and an external induction field μ0H = 1 T. At room temperature and zero external field, a helicity-dependent asymmetry of 6% suggests the stand-alone applicability of the device either as an electronic spin sensor or as an optical helicity sensor.

  5. Electrical detection of spin hyperpolarization in InP

    Energy Technology Data Exchange (ETDEWEB)

    Caspers, Christian; Ansermet, Jean-Philippe [Laboratoire de Physique des Matériaux Nanostructurés, École Polytechnique Fédérale de Lausanne EPFL, 1015 Lausanne (Switzerland)

    2014-09-29

    The electrical detection of surface spin polarization in Indium Phosphide (InP) is demonstrated. Using a planar four-terminal architecture on top of semi-insulating Fe:InP (001) wafers, optical orientation is separated from electrical detection. Spin filter tunnel contacts consisting of InP/oxide/Co reveal significant asymmetries in the differential resistance upon helicity change of the optical pumping. The iron-rich tunnel oxide provides the main spin selection mechanism. A reproducible helicity-dependent asymmetry as high as 18% could be observed at T = 55 K and an external induction field μ{sub 0}H = 1 T. At room temperature and zero external field, a helicity-dependent asymmetry of 6% suggests the stand-alone applicability of the device either as an electronic spin sensor or as an optical helicity sensor.

  6. Extended Wavelength InP Based Avalanche Diodes for MWIR Response Project

    Data.gov (United States)

    National Aeronautics and Space Administration — For this NASA STTR program, we propose to develop a novel superlattice-based near infrared to midwave infrared avalanche photodetector (APD) grown on InP substrates...

  7. Ultra-Fast Low Energy Switching Using an InP Photonic Crystal H0 Nanocavity

    DEFF Research Database (Denmark)

    Yu, Yi; Palushani, Evarist; Heuck, Mikkel;

    2013-01-01

    Pump-probe measurements on InP photonic crystal H0 nanocavities show large-contrast ultrafast switching at low pulse energy. For large pulse energies, high-frequency carrier density oscillations are induced, leading to pulsesplitting.......Pump-probe measurements on InP photonic crystal H0 nanocavities show large-contrast ultrafast switching at low pulse energy. For large pulse energies, high-frequency carrier density oscillations are induced, leading to pulsesplitting....

  8. Structural analysis of erbium {delta}-doped InP by OMVPE with RBS-channeling

    Energy Technology Data Exchange (ETDEWEB)

    Yuhara, Junji; Takeda, Hitoshi; Matsubara, Naoki; Tabuchi, Masao; Fujiwara, Yasufumi; Morita, Kenji; Takeda, Yoshikazu [Nagoya Univ. (Japan). School of Engineering

    1997-03-01

    We have determined the lattice location of Er in InP {delta}-doped by OMVPE with RBS-channeling. Er concentrations along the <001> and <011> directions are same as random yields, while a significant flux peaking effect is seen for the <111> direction. These data suggest that Er atoms occupy the site equivalent to the hexahedral site in InP lattice. (author)

  9. 6-Mercaptohexanoic acid assisted synthesis of high quality InP quantum dots for optoelectronic applications

    Science.gov (United States)

    Mahmoud, Waleed E.; Chang, Y. C.; Al-Ghamdi, A. A.; Al-Marzouki, F.; Bronstein, Lyudmila M.

    2013-04-01

    Indium phosphide semiconductor quantum dots are of significant heed as their applications encompass a spacious concatenation in LEDs and solar cells technologies. For improving their serviceable prominence, there is a real demand for a fashion that furnishes prompt and large mass production of mightily monodispersed nanoparticles. This study conveys an efficacious and fast recipe of generating substantially monodispersed InP quantum dots via water based route technique using a novel surfactant. Herein, InP QDs have been prepared using 6-mercaptohexanoic acid for achieving an effective surface passivation of monodispersed InP QDs with highly luminescence at temperature 50 °C. The as prepared quantum dots were investigated by transmission electron microscopy, luminescence spectroscopy, and X-ray diffraction. The XRD depicted that the InP quantum dots have a cubic zinc blend structure. TEM image revealed that the prepared quantum dots are monodispersed and their average particle size of about 4 nm. Energy dispersive X-ray spectroscopy confirmed the existence of organic ligand as a shell around InP nanoparticles. Time resolved spectra depicted that the capping agent passivated the InP QDs surface and enhanced the luminescence emission.

  10. Wafer-scale self-organized InP nanopillars with controlled orientation for photovoltaic devices.

    Science.gov (United States)

    Sanatinia, Reza; Berrier, Audrey; Dhaka, Veer; Perros, Alexander P; Huhtio, Teppo; Lipsanen, Harri; Anand, Srinivasan

    2015-10-16

    A unique wafer-scale self-organization process for generation of InP nanopillars is demonstrated, which is based on maskless ion-beam etching (IBE) of InP developed to obtain the nanopillars, where the height, shape, and orientation of the nanopillars can be varied by controlling the processing parameters. The fabricated InP nanopillars exhibit broadband suppression of the reflectance, 'black InP,' a property useful for solar cells. The realization of a conformal p-n junction for carrier collection, in the fabricated solar cells, is achieved by a metalorganic vapor phase epitaxy (MOVPE) overgrowth step on the fabricated pillars. The conformal overgrowth retains the broadband anti-reflection property of the InP nanopillars, indicating the feasibility of this technology for solar cells. Surface passivation of the formed InP nanopillars using sulfur-oleylamine solution resulted in improved solar-cell characteristics. An open-circuit voltage of 0.71 V and an increase of 0.13 V compared to the unpassivated device were achieved.

  11. Influence of catalyst droplet diameter on the growth direction of InP nanowires grown on Si(001) substrate

    Science.gov (United States)

    Naji, K.; Saint-Girons, G.; Penuelas, J.; Patriarche, G.; Largeau, L.; Dumont, H.; Rojo-Romeo, P.; Gendry, M.

    2013-06-01

    It is demonstrated that the growth direction of InP nanowires grown on (001)-oriented silicon substrate strongly depends on the diameter of the gold catalyst droplets. Small droplets with diameter less than about 15 nm lead to the formation of nanowires leaning on the {111} planes of the zinc blende InP seeds formed in the early stages of growth. Larger droplets lead to the formation of twins in the InP seeds and to the formation of nanowires leaning on the {111} planes of these twinned InP variants, inducing growth directions corresponding to the directions of the silicon substrate.

  12. 基于元素磷源的InP量子点的制备%Synthesis of InP Quantum Dots with Elemental Phosphine Source

    Institute of Scientific and Technical Information of China (English)

    王彬彬; 王莉; 汪瑾; 蒋阳

    2012-01-01

    The InP quantum dots (QDs) were synthesized via a colloidal chemical method with white phosphorus (P4), indium acetate (In (Ac)3), stearic acid and 1-octadecene (ODE) as phosphorus source, indium source, surfactant and solvent, respectively. The structure, size and shape of the quantum dots were analyzed by XRD and TEM. The resulting InP QDs were also characterized by UV-Visible absorption and fluorescence spectroscopy. The title material exhibits well-resolved absorption and emission properties. Meanwhile, the InP QDs emit at 415~517 nm in the electromagnetic spectrum showing obvious quantum size effect.%以白磷作为磷源、醋酸铟为铟源、硬脂酸为表面包覆剂、十八烯为溶剂,采用胶体化学法合成了InP量子点.X射线衍射(XRD)和透射电子显微镜(TEM)分析测试显示InP量子点属于立方闪锌矿结构,并且是直径约为5 nm的球状纳米晶.紫外可见光谱和荧光光谱分析表明,InP量子点表现出明显的激子吸收和带边发射特征,荧光发射光谱在415~517 nm范围内连续可调,呈现明显的量子尺寸效应.

  13. Surface processes during purification of InP quantum dots

    Directory of Open Access Journals (Sweden)

    Natalia Mordvinova

    2014-08-01

    Full Text Available Recently, a new simple and fast method for the synthesis of InP quantum dots by using phosphine as phosphorous precursor and myristic acid as surface stabilizer was reported. Purification after synthesis is necessary to obtain samples with good optical properties. Two methods of purification were compared and the surface processes which occur during purification were studied. Traditional precipitation with acetone is accompanied by a small increase in photoluminescence. It occurs that during the purification the hydrolysis of the indium precursor takes place, which leads to a better surface passivation. The electrophoretic purification technique does not increase luminescence efficiency but yields very pure quantum dots in only a few minutes. Additionally, the formation of In(OH3 during the low temperature synthesis was explained. Purification of quantum dots is a very significant part of postsynthetical treatment that determines the properties of the material. But this subject is not sufficiently discussed in the literature. The paper is devoted to the processes that occur at the surface of quantum dots during purification. A new method of purification, electrophoresis, is investigated and described in particular.

  14. Surface processes during purification of InP quantum dots.

    Science.gov (United States)

    Mordvinova, Natalia; Emelin, Pavel; Vinokurov, Alexander; Dorofeev, Sergey; Abakumov, Artem; Kuznetsova, Tatiana

    2014-01-01

    Recently, a new simple and fast method for the synthesis of InP quantum dots by using phosphine as phosphorous precursor and myristic acid as surface stabilizer was reported. Purification after synthesis is necessary to obtain samples with good optical properties. Two methods of purification were compared and the surface processes which occur during purification were studied. Traditional precipitation with acetone is accompanied by a small increase in photoluminescence. It occurs that during the purification the hydrolysis of the indium precursor takes place, which leads to a better surface passivation. The electrophoretic purification technique does not increase luminescence efficiency but yields very pure quantum dots in only a few minutes. Additionally, the formation of In(OH)3 during the low temperature synthesis was explained. Purification of quantum dots is a very significant part of postsynthetical treatment that determines the properties of the material. But this subject is not sufficiently discussed in the literature. The paper is devoted to the processes that occur at the surface of quantum dots during purification. A new method of purification, electrophoresis, is investigated and described in particular.

  15. Long-wavelength VCSELs with AlGaAsSb/AlAsSb Bragg mirrors lattice-matched on InP substrates

    Science.gov (United States)

    Almuneau, Guilhem; Hall, Eric M.; Nakagawa, Shigeru; Kim, Jin K.; Coldren, Larry A.

    2000-05-01

    The characterization of 1.55 micrometer room temperature (RT) electrically pumped monolithic vertical cavity surface emitting lasers (VCSELs) on InP is reported. By combining high refractive index-contrast AlGaAsSb/AlAsSb distributed Bragg mirrors (DBRs) and Esaki-junction-based active region, these results demonstrate that VCSELs operating at 1.55 micrometer and employing a reasonable number of mirror periods can be grown in a single epitaxial step. Regarding our first results with the same type of structure, some improvements have been achieved on the threshold current density (approximately equals 1 kA/cm2), and on the voltage drop in the DBRs. We also present in this paper the thermal conductivity of the As- Sb materials measured on both bulk layers and DBR stacks. The main performance-limiting factor appears to be the combination between the low thermal conduction of the quaternary alloys lattice-matched to InP, and the high energy-band offset between the high- and the low-index materials.

  16. The salicylidene acylhydrazide INP0341 attenuates Pseudomonas aeruginosa virulence in vitro and in vivo.

    Science.gov (United States)

    Uusitalo, Pia; Hägglund, Ulrik; Rhöös, Elin; Scherman Norberg, Henrik; Elofsson, Mikael; Sundin, Charlotta

    2017-08-01

    Pseudomonas aeruginosa is an opportunistic pathogen that can be very hard to treat because of high resistance to different antibiotics and alternative treatment regimens are greatly needed. An alternative or a complement to traditional antibiotic is to inhibit virulence of the bacteria. The salicylidene acylhydrazide, INP0341, belongs to a class of compounds that has previously been shown to inhibit virulence in a number of Gram-negative bacteria. In this study, the virulence blocking effect of INP0341 on P. aeruginosa was studied in vitro and in vivo. Two important and closely related virulence system were examined, the type III secretion system (T3SS) that translocates virulence effectors into the cytosol of the host cell to evade immune defense and facilitate colonization and the flagella system, needed for motility and biofilm formation. INP0341 was shown to inhibit expression and secretion of the T3SS toxin exoenzyme S (ExoS) and to prevent bacterial motility on agar plates and biofilm formation. In addition, INP0341 showed an increased survival of P. aeruginosa-infected mice. In conclusion, INP0341 attenuates P. aeruginosa virulence.

  17. Photoluminescence study of as-grown vertically standing wurtzite InP nanowire ensembles.

    Science.gov (United States)

    Iqbal, Azhar; Beech, Jason P; Anttu, Nicklas; Pistol, Mats-Erik; Samuelson, Lars; Borgström, Magnus T; Yartsev, Arkady

    2013-03-22

    We demonstrate a method that enables the study of photoluminescence of as-grown nanowires on a native substrate by non-destructively suppressing the contribution of substrate photoluminescence. This is achieved by using polarized photo-excitation and photoluminescence and by making an appropriate choice of incident angle of both excitation beam and photoluminescence collection direction. Using TE-polarized excitation at a wavelength of 488 nm at an incident angle of ∼70° we suppress the InP substrate photoluminescence relative to that of the InP nanowires by about 80 times. Consequently, the photoluminescence originating from the nanowires becomes comparable to and easily distinguishable from the substrate photoluminescence. The measured photoluminescence, which peaks at photon energies of ∼1.35 eV and ∼1.49 eV, corresponds to the InP substrate with zinc-blende crystal structure and to the InP nanowires with wurtzite crystal structure, respectively. The photoluminescence quantum yield of the nanowires was found to be ∼20 times lower than that of the InP substrate. The nanowires, grown vertically in a random ensemble, neither exhibit substantial emission polarization selectivity to the axis of the nanowires nor follow excitation polarization preferences observed previously for a single nanowire.

  18. Differential InP HEMT MMIC Amplifiers Embedded in Waveguides

    Science.gov (United States)

    Kangaslahti, Pekka; Schlecht, Erich; Samoska, Lorene

    2009-01-01

    Monolithic microwave integrated-circuit (MMIC) amplifiers of a type now being developed for operation at frequencies of hundreds of gigahertz contain InP high-electron-mobility transistors (HEMTs) in a differential configuration. The differential configuration makes it possible to obtain gains greater than those of amplifiers having the single-ended configuration. To reduce losses associated with packaging, the MMIC chips are designed integrally with, and embedded in, waveguide packages, with the additional benefit that the packages are compact enough to fit into phased transmitting and/or receiving antenna arrays. Differential configurations (which are inherently balanced) have been used to extend the upper limits of operating frequencies of complementary metal oxide/semiconductor (CMOS) amplifiers to the microwave range but, until now, have not been applied in millimeter- wave amplifier circuits. Baluns have traditionally been used to transform from single-ended to balanced configurations, but baluns tend to be lossy. Instead of baluns, finlines are used to effect this transformation in the present line of development. Finlines have been used extensively to drive millimeter- wave mixers in balanced configurations. In the present extension of the finline balancing concept, finline transitions are integrated onto the affected MMICs (see figure). The differential configuration creates a virtual ground within each pair of InP HEMT gate fingers, eliminating the need for inductive vias to ground. Elimination of these vias greatly reduces parasitic components of current and the associated losses within an amplifier, thereby enabling more nearly complete utilization of the full performance of each transistor. The differential configuration offers the additional benefit of multiplying (relative to the single-ended configuration) the input and output impedances of each transistor by a factor of four, so that it is possible to use large transistors that would otherwise have

  19. Comparison of low-temperature oxides on polycrystalline InP by AES, SIMS and XPS

    Science.gov (United States)

    Kazmerski, L. L.; Ireland, P. J.; Sheldon, P.; Chu, T. L.; Chu, S. S.; Lin, C. L.

    1980-10-01

    Oxides and their interfaces with polycrystalline InP are examined using complementary high-resolution AES, SIMS and XPS. The oxides, grown by low-temperature dry and wet processes, are compared for composition and phase content. SIMS and AES depth-composition data are used to compare the uniformity of the oxide layers and the composition of the interfacial region. Confirmation of impurity accumulation at the oxide-InP interfaces is presented, including buildup of elemental P and InP dopant, S. Other impurities associated with the growth of the wet oxide are found to be localized at the interface. Some evidence of impurity accumulation at grain boundaries at the wet oxide-polycrystalline InP interface is provided by SIMS and EBIC.

  20. Twin and grain boundary in InP: A synchrotron radiation study

    Energy Technology Data Exchange (ETDEWEB)

    Han, Y.; Liu, X.; Jiao, J.; Lin, L. [Chinese Academy of Sciences, Beijing (China). Inst. of Semiconductors; Jiang, J.; Wang, Z.; Tian, Y. [Chinese Academy of Sciences, Beijing (China). Beijing Synchrotron Radiation Lab.

    1998-12-31

    Experimentally observed X-ray reflectivity curves show bi-crystal(twin) characteristics. The study revealed that there was defect segregation at the twin boundary. Stress was relaxed at the edge of the boundary. Relaxation of the stress resulted in formation of twin and other defects. As a result of formation of such defects, a defect-free and stress-free zone or low defect density and small stress zone is created around the defects. So a twin model was proposed to explain the experimental results. Stress(mainly thermal stress), chemical stoichiometry deviation and impurities nonhomogeneous distributions are the key factors that cause twins in LEC InP crystal growth. Twins on (111) face in LEC InP crystal were studied. Experimental evidence of above mentioned twin model and suggestions on how to get twin-free LEC InP single crystals will be discussed.

  1. Excitonic properties of wurtzite InP nanowires grown on silicon substrate

    Science.gov (United States)

    Alouane, M. H. Hadj; Chauvin, N.; Khmissi, H.; Naji, K.; Ilahi, B.; Maaref, H.; Patriarche, G.; Gendry, M.; Bru-Chevallier, C.

    2013-01-01

    In order to investigate the optical properties of wurtzite (Wz) InP nanowires grown on Si(001) by solid source molecular beam epitaxy with the vapour-liquid-solid method, the growth temperature and V/III pressure ratio have been optimized to remove any zinc-blende insertion. These pure Wz InP nanowires have been investigated by photoluminescence (PL), time-resolved PL and PL excitation. Direct observation of the second and third valence band in Wz InP nanowires using PL spectroscopy at high excitation power have been reported and, from these measurements, a crystal field splitting of 74 meV and a spin-orbit interaction energy of 145 meV were extracted. Based on the study of temperature-dependent optical properties, we have performed an investigation of the thermal escape processes of carriers and the electron-phonon coupling strength.

  2. Comparative Monte Carlo analysis of InP- and GaN-based Gunn diodes

    Science.gov (United States)

    García, S.; Pérez, S.; Íñiguez-de-la-Torre, I.; Mateos, J.; González, T.

    2014-01-01

    In this work, we report on Monte Carlo simulations to study the capability to generate Gunn oscillations of diodes based on InP and GaN with around 1 μm active region length. We compare the power spectral density of current sequences in diodes with and without notch for different lengths and two doping profiles. It is found that InP structures provide 400 GHz current oscillations for the fundamental harmonic in structures without notch and around 140 GHz in notched diodes. On the other hand, GaN diodes can operate up to 300 GHz for the fundamental harmonic, and when the notch is effective, a larger number of harmonics, reaching the Terahertz range, with higher spectral purity than in InP diodes are generated. Therefore, GaN-based diodes offer a high power alternative for sub-millimeter wave Gunn oscillations.

  3. Design and modeling of InP DHBT power amplifiers at millimeter-wave frequencies

    DEFF Research Database (Denmark)

    Yan, Lei; Johansen, Tom K.

    2012-01-01

    In this paper, the design and modeling of InP DHBT based millimeter-wave(mm-wave) power amplifiers is described. This includes the modeling of InP DHBT devices and layout parasitics. An EM-circuit co-simulation approach is described to allow all parasitics to be modeled for accurate circuit...... performance evaluation. A single-branch cascode based PA using single-finger InP DHBT devices shows a measured power gain of 9.2dB and a saturated output power of 12.3dBm at 67.2GHz. The output power at 1dB compression is 9.0dBm. A similar two-way combined cascode based PA using three-finger devices...

  4. Temperature and Thickness Effects on Electrical Properties of InP Films Deposited by Spray Pyrolysis

    Institute of Scientific and Technical Information of China (English)

    Rcfik Kayah; Mehmet Ari; Mustafa Oztas; Metin Bedir; Funda Aksoy

    2009-01-01

    InP film samples are prepared by spray pyrolysis technique using aqueous solutions of InCl3 and Na2HPO4, which are atomized with compressed air as carrier gas onto glass substrates at 500 ℃ with different thicknesses of the films. The structural properties of the samples are determined by x-ray diffraction (XRD). It is found that the crystal structure of the InP films is polycrystailine hexagonal. The orientations of all the obtained films are along the c-axis perpendicular to the substrate. The electrical measurements of the samples are obtained by dc four-probe technique on rectangular-shape samples. The effects of temperature on the electrical properties of the InP films are studied in detail.

  5. InP on SOI devices for optical communication and optical network on chip

    Science.gov (United States)

    Fedeli, J.-M.; Ben Bakir, B.; Olivier, N.; Grosse, Ph.; Grenouillet, L.; Augendre, E.; Phillippe, P.; Gilbert, K.; Bordel, D.; Harduin, J.

    2011-01-01

    For about ten years, we have been developing InP on Si devices under different projects focusing first on μlasers then on semicompact lasers. For aiming the integration on a CMOS circuit and for thermal issue, we relied on SiO2 direct bonding of InP unpatterned materials. After the chemical removal of the InP substrate, the heterostructures lie on top of silicon waveguides of an SOI wafer with a separation of about 100nm. Different lasers or photodetectors have been achieved for off-chip optical communication and for intra-chip optical communication within an optical network. For high performance computing with high speed communication between cores, we developed InP microdisk lasers that are coupled to silicon waveguide and produced 100μW of optical power and that can be directly modulated up to 5G at different wavelengths. The optical network is based on wavelength selective circuits with ring resonators. InGaAs photodetectors are evanescently coupled to the silicon waveguide with an efficiency of 0.8A/W. The fabrication has been demonstrated at 200mm wafer scale in a microelectronics clean room for CMOS compatibility. For off-chip communication, silicon on InP evanescent laser have been realized with an innovative design where the cavity is defined in silicon and the gain localized in the QW of bonded InP hererostructure. The investigated devices operate at continuous wave regime with room temperature threshold current below 100 mA, the side mode suppression ratio is as high as 20dB, and the fibercoupled output power is {7mW. Direct modulation can be achieved with already 6G operation.

  6. Estimating the background covariance error for the Global Data Assimilation System of CPTEC/INPE

    Science.gov (United States)

    Bastarz, C. F.; Goncalves, L.

    2013-05-01

    The global data assimilation system at CPTEC/INPE, named G3Dvar is based in the Gridoint Statistical Interpolation (GSI/NCEP/GMAO) and in the general circulation model from that same center (GCM/CPTEC/INPE). The G3Dvar is a tri-dimensional variational data assimilation system that uses a Background Error Covariance Matrix (BE) fixed (in its current implementation, it uses the matrix from Global Forecast System - GFS/NCEP). The goal of this work is to present the preliminary results of the calculation of the new BE based on the GCM/CPTEC/INPE using a methodology similar to the one used for the GSI/WRFDA, called gen_be. The calculation is done in 5 distinct steps in the analysis increment space. (a) stream function and potential velocity are determined from the wind fields; (b) the mean of the stream function and potential velocity are calculated in order to obtain the perturbation fields for the remaing variables (streamfunction, potencial velocity, temperature, relative humidity and surface pressure); (c) the covariances of the perturbation fields, regression coeficients and balance between streamfunction, temperature and surface pressure are estimated. For this particular system, i.e. GCM/CPTEC/INPE, the necessity for constrains towards the statistical balance between streamfuncion and potential velocity, temperature and surface pressure will be evaluated as well as the how it affects the BE matrix calculation. Hence, this work will investigate the necessary procedures for calculating BE and show how does that differs from the standard calculation and how it is calibrated/adjusted based on the GCM/CPTEC/INPE. Results from a comparison between the main differences between the GFS BE and the newly calculated GCM/CPTEC/INPE BE are discussed in addition to an impact study using the different background error covariance matrices.

  7. InP based lasers and optical amplifiers with wire-/dot-like active regions

    DEFF Research Database (Denmark)

    Reithmaier, J. P.; Somers, A.; Deubert, S.

    2005-01-01

    Long wavelength lasers and semiconductor optical amplifiers based on InAs quantum wire/dot-like active regions were developed on InP substrates dedicated to cover the extended telecommunication wavelength range between 1.4 - 1.65 mm. In a brief overview different technological approaches will be ......Long wavelength lasers and semiconductor optical amplifiers based on InAs quantum wire/dot-like active regions were developed on InP substrates dedicated to cover the extended telecommunication wavelength range between 1.4 - 1.65 mm. In a brief overview different technological approaches...

  8. Design and fabrication of InP micro-ring resonant detectors

    Institute of Scientific and Technical Information of China (English)

    辛海明; 黄永清; 陈海波; 黄辉; 任晓敏; 周星光

    2009-01-01

    The quantum efficiency and the transient response of the InP semiconductor micro-ring resonant detector are analyzed to get the optimum design parameters.Then the side coupling micro-ring resonant is fabricated using the InP semiconductor material based on the parameters.The micro-ring resonant cavity has the raius of 80 μm,waveguide width of 3 μm and the coupler gap of 1 μm.The test results show that the FSR is 0.75 nm,and the FWHM is 0.5 nm,which are consistent with the theoretical calculation results.

  9. ANISOTROPIC RADIATIVE DECAY OF InP SELF-ASSEMBLED QUANTUM DOTS

    OpenAIRE

    1998-01-01

    Strong optical anisotropy of the photoluminescence (PL) spectra and time resolvedPL spectra is observed in InP self-assembled quantum dots (SADs) embedded inGaInP matrix. From the TEM study, the origin of the optical anisotropy appearsto be due to the formation of composition modulation planes in GaInP matrix.We also studied the size dependence of the radiative decay time. In the vicinityof the PL peak from InP SADs, slowdown of the PL decay time was observed ondecreasing the detection energy...

  10. Electronic and Vibrational Spectra of InP Quantum Dots Formed by Sequential Ion Implantation

    Science.gov (United States)

    Hall, C.; Mu, R.; Tung, Y. S.; Ueda, A.; Henderson, D. O.; White, C. W.

    1997-01-01

    We have performed sequential ion implantation of indium and phosphorus into silica combined with controlled thermal annealing to fabricate InP quantum dots in a dielectric host. Electronic and vibrational spectra were measured for the as-implanted and annealed samples. The annealed samples show a peak in the infrared spectra near 320/cm which is attributed to a surface phonon mode and is in good agreement with the value calculated from Frolich's theory of surface phonon polaritons. The electronic spectra show the development of a band near 390 nm that is attributed to quantum confined InP.

  11. Spin Quantum Beats in InP Quantum Dots in a Magnetic Field

    Science.gov (United States)

    2001-06-01

    UNCLASSIFIED Defense Technical Information Center Compilation Part Notice ADP013252 TITLE: Spin Quantum Beats in InP Quantum Dots in a Magnetic Field...Technology" SRPN.05 St Petersburg, Russia, June 18-22, 2001 (0 2001 loffe Institute Spin quantum beats in InP quantum dots in a magnetic field L A... quantum dots . A detailed description of the structure is given in [ ]. The luminescence was excited by 3 ps pulses of a Ti:sapphire laser, 40 meV above

  12. InP Gunn Diodes with Current Limiting Contact for High Efficiency Gunn Oscillators

    Science.gov (United States)

    Kim, Mi-Ra; Rhee, Jin-Koo; Lee, Chang-Woo; Chae, Yeon-Sik; Choi, Jae-Hyun; Kim, Wan-Joo

    We fabricated and examined current limiting effect for InP Gunn diodes with stable depletion layer mode operation of diodes for high efficiency Gunn oscillators. Current limiting at the cathode was achieved by a shallow Schottky barrier at the interface. We discussed fabrication procedure, the results for negative differential resistance and rf tests for InP Gunn diodes. It was shown that the fabricated Gunn diodes have the output power of 10.22dBm at a frequency of 90.13GHz. Its input voltage and corresponding current were 8.55V and 252mA, respectively.

  13. Self-assembly structure formation on patterned InP surfaces

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    Self-assembly of polystyrene spheres guided by patterned n-type InP substrates has been investigated. InP surfaces were patterned using a variety of methods including wet chemical etching,sputter coating,thermal evaporation,and photo lithography. The self-assembly of polystyrene spheres depended on the appearance of patterns and was affected by the deposition techniques (sputter coating and thermal evaporation) of Au micro-squares. SEM and AFM were used to characterize the surface morphologies.

  14. AFM observation of OMVPE-grown ErP on InP substrates using a new organometal tris(ethylcyclopentadienyl)erbium (Er(EtCp){sub 3})

    Energy Technology Data Exchange (ETDEWEB)

    Akane, T.; Jinno, S.; Yang, Y.; Kuno, T.; Hirata, T.; Isogai, Y.; Watanabe, N.; Fujiwara, Y.; Nakamura, A.; Takeda, Y

    2003-06-30

    ErP has been grown on InP(0 0 1) substrates by organometallic vapor phase epitaxy (OMVPE) using a new liquid organic Er source: tris(ethylcyclopentadienyl)erbium (Er(EtCp){sub 3}). Morphological change of an ErP layer on InP(0 0 1) is investigated together with that of an overgrown capping InP layer. Optimum growth condition of InP causes islanding on over-monolayer-ErP. A relatively low overgrowth temperature of InP is a key factor for attaining complete capping coverage on ErP.

  15. Absence of tumor suppressor tumor protein 53-induced nuclear protein 1 (TP53INP1) sensitizes mouse thymocytes and embryonic fibroblasts to redox-driven apoptosis.

    Science.gov (United States)

    N'guessan, Prudence; Pouyet, Laurent; Gosset, Gaëlle; Hamlaoui, Sonia; Seillier, Marion; Cano, Carla E; Seux, Mylène; Stocker, Pierre; Culcasi, Marcel; Iovanna, Juan L; Dusetti, Nelson J; Pietri, Sylvia; Carrier, Alice

    2011-09-15

    The p53-transcriptional target TP53INP1 is a potent stress-response protein promoting p53 activity. We previously showed that ectopic overexpression of TP53INP1 facilitates cell cycle arrest as well as cell death. Here we report a study investigating cell death in mice deficient for TP53INP1. Surprisingly, we found enhanced stress-induced apoptosis in TP53INP1-deficient cells. This observation is underpinned in different cell types in vivo (thymocytes) and in vitro (thymocytes and MEFs), following different types of injury inducing either p53-dependent or -independent cell death. Nevertheless, absence of TP53INP1 is unable to overcome impaired cell death of p53-deficient thymocytes. Stress-induced ROS production is enhanced in the absence of TP53INP1, and antioxidant NAC complementation abolishes increased sensitivity to apoptosis of TP53INP1-deficient cells. Furthermore, antioxidant defenses are defective in TP53INP1-deficient mice in correlation with ROS dysregulation. Finally, we show that autophagy is reduced in TP53INP1-deficient cells both at the basal level and upon stress. Altogether, these data show that impaired ROS regulation in TP53INP1-deficient cells is responsible for their sensitivity to induced apoptosis. In addition, they suggest that this sensitivity could rely on a defect of autophagy. Therefore, these data emphasize the role of TP53INP1 in protection against cell injury.

  16. Voc Degradation in TF-VLS Grown InP Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Sun, Yubo; Sun, Xingshu; Johnston, Steve; Sutter-Fella, Carolin M.; Hettick, Mark; Javey, Ali; Bermel, Peter

    2016-11-21

    Here we consider two hypotheses to explain the open-circuit voltage (VOC) degradation observed in thin-film vapor-liquid-solid (TF-VLS) grown p-type InP photovoltaic cells: bandgap narrowing and local shunting. First, a bandgap (Eg) narrowing effect is hypothesized, based on the surface inhomogeneity of VLS InP captured by the photoluminescence (PL) image. The PL data was used to estimate a spatially-resolved active VOC across surface of the InP sample. Combining this data with the effective Jsc allowed an assessment of the I-V characteristics of individual unit cells. Next, an H-SPICE diode compact model was utilized to reproduce the I-V characteristics of the whole sample. We find a good fit to the I-V performance of TF-VLS grown InP solar cell. Second, a local shunting effect was also considered as an alternative explanation of the VOC degradation effect. Again, PL image data was used, and small local shunt resistance was added in arbitrary elementary unit cells to represent certain dark spots seen in the PL image and dictate the VOC degradation occurred in the sample.

  17. The 3DVar Gridpoint Statistical Interpolation Impacts in the CPTEC/INPE Global Operational System

    Science.gov (United States)

    de Goncalves, L.

    2013-05-01

    A Global 3DVar (G3DVar) analysis cycle has become operacional since January 1st, 2013 at the Center for Weather Forecast and Climate Studies (CPTEC - Centro de Previsão de Tempo e Estudos Climáticos) from the Brazilian National Institute for Space Research (INPE - Instituto Nacional de Pesquisas Espaciais). The G3DVar, based upon the Gridpoint Statistical Interpolation (GSI) system produces every 6 hours analysis for the spectral T299L64 Atmospheric Global Circulation Model (AGCM/CPTEC/INPE) that runs at CPTEC/INPE to provide up to 168 hours forecasts. These analyses and forecasts were intercompared against the previous operational data assimilation scheme based on the Physical Space Assimilation System (PSAS) during two case studies for a typical South American summer meteorological system: the South Atlantic Convergence Zone (SACZ). This work presents the formal implementation of the G3DVar at CPTEC/INPE with a review of the satellite, conventional data and model background configurations along with the major improvements in the model skill when compared with the previous PSAS data assimilation system. Preliminary results show improvements in systematic errors for 850 and 250 hPa temperature, umididty and wind fields in the G3DVar compared to that in PSAS.

  18. Switching characteristics of an InP photonic crystal nanocavity: Experiment and theory

    DEFF Research Database (Denmark)

    Yu, Yi; Palushani, Evarist; Heuck, Mikkel

    2013-01-01

    The dynamical properties of an InP photonic crystal nanocavity are experimentally investigated using pump-probe techniques and compared to simulations based on coupled-mode theory. Excellent agreement between experimental results and simulations is obtained when employing a rate equation model co...

  19. Design procedure for millimeter-wave InP DHBT stacked power amplifiers

    DEFF Research Database (Denmark)

    Squartecchia, Michele; Johansen, Tom Keinicke; Midili, Virginio

    2015-01-01

    The stacked-transistor concept for power amplifiers (PA) has been investigated in this work. Specifically, this architecture has been applied in the design of millimeter-wave monolithic microwave integrated circuits (MMICs) using indium phosphide (InP) double heterojunction bipolar transistors...

  20. InP DHBT MMICs for millimeter-wave front-ends

    DEFF Research Database (Denmark)

    Johansen, Tom Keinicke; Hadziabdic, Dzenan; Krozer, Viktor

    2009-01-01

    In this paper, we show advanced MMIC's using InP DHBT technology. In particular, we demonstrate front-end circuits covering a broad frequency range from Q-band to E-band. Realizations of power amplifiers, quadrature VCOs, and sub-harmonic mixers, are presented and experimental results are discussed....

  1. Small- and large-signal modeling of InP HBTs in transferred-substrate technology

    DEFF Research Database (Denmark)

    Johansen, Tom Keinicke; Rudolph, Matthias; Jensen, Thomas

    2014-01-01

    In this paper, the small- and large-signal modeling of InP heterojunction bipolar transistors (HBTs) in transferred substrate (TS) technology is investigated. The small-signal equivalent circuit parameters for TS-HBTs in two-terminal and three-terminal configurations are determined by employing...

  2. X-Ray Photoelectron Spectroscopic Study of Oxidation of InP

    Science.gov (United States)

    Shibata, Noboru; Ikoma, Hideaki

    1992-12-01

    InP was oxidized chemically (in boiling deionized water), thermally (dry oxygen, 260°C, 30 min) and chemically under light illumination from a xenon arc lamp. The chemical compositions and their depth distributions from the surface of these oxides as well as the InP native oxide (naturally grown) were studied by angle-resolved X-ray photoelectron spectroscopy (XPS) and XPS combined with in situ Ar+ ion etching. In any oxide, indium is first oxidized to form In2O3 perhaps due to depletion of phosphorus from the InP surface induced by contact annealing, etc. InPO3 and/or InPO4 are then successively grown on an In2O3 or In2O3 rich layer. In and P atoms diffuse through the already grown In2O3 layer and react with oxidant at the surface to form InPO3 and/or InPO4. Light illumination was found to strongly enhance oxidation of InP, and substantially increase InPO3 and InPO4.

  3. An InP HBT sub-harmonic mixer for E-band wireless communication

    DEFF Research Database (Denmark)

    Johansen, Tom Keinicke; Krozer, Viktor

    2010-01-01

    This paper reports on a novel balanced HBT subharmonic mixer (SHM) for E-band wireless communication. An LO spiral type Marchand balun is integrated with the SHM. The SHM has been fabricated in a InP double heterojunction bipolar transistor (DHBT) circuit-oriented technology with fT /fmax = 180GHz...

  4. Investigation of High Speed ICs in InP Using MIS Structures.

    Science.gov (United States)

    1984-10-01

    3x3 digital multiplier for demonstration of the InP MISFET technolgy provides MSI levels of circuit integration as well as a self test mode of circuit...variables such as doping levels, oxide capacitance, mobility , transconductance, and even velocity saturation effects for short channel lengths. The end

  5. Fabrication and magnetic properties of granular Co/porous InP nanocomposite materials

    Directory of Open Access Journals (Sweden)

    Ma Li

    2011-01-01

    Full Text Available Abstract A novel Co/InP magnetic semiconductor nanocomposite was fabricated by electrodeposition magnetic Co nanoparticles into n-type porous InP templates in ethanol solution of cobalt chloride. The content or particle size of Co particles embedded in porous InP increased with increasing deposition time. Co particles had uniform distribution over pore sidewall surface of InP template, which was different from that of ceramic template and may open up new branch of fabrication of nanocomposites. The magnetism of such Co/InP nanocomposites can be gradually tuned from diamagnetism to ferromagnetism by increasing the deposition time of Co. Magnetic anisotropy of this Co/InP nanocomposite with magnetization easy axis along the axis of InP square channel was well realized by the competition between shape anisotropy and magnetocrystalline anisotropy. Such Co/InP nanocomposites with adjustable magnetism may have potential applications in future in the field of spin electronics. PACS: 61.46. +w · 72.80.Tm · 81.05.Rm · 75.75. +a · 82.45.Aa

  6. Reverse Current Characteristics of InP Gunn Diodes for W-Band Waveguide Applications.

    Science.gov (United States)

    Kim, Hyun-Seok; Heo, Jun-Woo; Chol, Seok-Gyu; Ko, Dong-Sik; Rhee, Jin-Koo

    2015-07-01

    InP is considered as the most promising material for millimeter-wave laser-diode applications owing to its superior noise performance and wide operating frequency range of 75-110 GHz. In this study, we demonstrate the fabrication of InP Gunn diodes with a current-limiting structure using rapid thermal annealing to modulate the potential height formed between an n-type InP active layer and a cathode contact. We also explore the reverse current characteristics of the InP Gunn diodes. Experimental results indicate a maximum anode current and an oscillation frequency of 200 mA and 93.53 GHz, respectively. The current-voltage characteristics are modeled by considering the Schottky and ohmic contacts, work function variations, negative differential resistance (NDR), and tunneling effect. Although no direct indication of the NDR is observed, the simulation results match the measured data well. The modeling results show that the NDR effect is always present but is masked because of electron emission across the shallow Schottky barrier.

  7. Millimeter‐wave INP DHBT power amplifier based on power‐optimized cascode configuration

    DEFF Research Database (Denmark)

    Johansen, Tom K.; Yan, Lei; Dupuy, Jean‐Yves

    2013-01-01

    This letter describes the use of a power‐optimized cascode configuration for obtaining maximum output power at millimeter‐wave (mm‐wave) frequencies for a two‐way combined power amplifier (PA). The PA has been fabricated in a high‐speed InP double heterojunction bipolar transistor technology...

  8. Design of mm-wave InP DHBT power amplifiers

    DEFF Research Database (Denmark)

    Johansen, Tom Keinicke; Yan, Lei

    2011-01-01

    power, gain, and efficiency. The design issues associated with cascode based power amplifiers at mm-wave frequencies is described. The experimental results on a two-way combined single-stage cascode based InP DHBT power amplifier demonstrate 13.4dB linear power gain and 12.5dBm saturated output power...

  9. Modeling of InP HBTs in Transferred-Substrate Technology for Millimeter-Wave Applications

    DEFF Research Database (Denmark)

    Johansen, Tom Keinicke; Rudolph, Matthias; Jensen, Thomas;

    2013-01-01

    In this paper, the modeling of InP heterojunction bipolar transistors (HBTs) in transferred substrate (TS) technology is investigated. At first, a direct parameter extraction methodology dedicated to III-V based HBTs is employed to determine the small-signal equivalent circuit parameters from...

  10. Saturation broadening effect in an InP photonic-crystal nanocavity switch

    DEFF Research Database (Denmark)

    Yu, Yi; Palushani, Evarist; Heuck, Mikkel;

    2014-01-01

    Pump-probe measurements on InP photonic-crystal nanocavities show large-contrast fast switching at low pulse energy. For large pulse energies, large resonance shifts passing across the probe lead to switching contrast saturation and switching time-window broadening. © 2014 OSA....

  11. An automated Teflon microfluidic peptide synthesizer.

    Science.gov (United States)

    Zheng, Hui; Wang, Weizhi; Li, Xiaojun; Wang, Zihua; Hood, Leroy; Lausted, Christopher; Hu, Zhiyuan

    2013-09-07

    We present a microfluidic synthesizer made entirely of Teflon material for solid phase peptide synthesis (SPPS). Solvent-resistant perfluoroalkoxy (PFA) was used to construct chip-sized devices featuring multiple tri-layer pneumatic microvalves. Using these devices, model peptides were automatically synthesized and cleaved in situ in a continuous-flow manner. The total coupling and cleavage time was significantly reduced compared to conventional bulk reactors. The synthesis of a decapeptide, for instance, took less than 6 h using our device while it usually takes more than three days using conventional reactors.

  12. Bulk Nanostructured Materials

    Science.gov (United States)

    Koch, C. C.; Langdon, T. G.; Lavernia, E. J.

    2017-09-01

    This paper will address three topics of importance to bulk nanostructured materials. Bulk nanostructured materials are defined as bulk solids with nanoscale or partly nanoscale microstructures. This category of nanostructured materials has historical roots going back many decades but has relatively recent focus due to new discoveries of unique properties of some nanoscale materials. Bulk nanostructured materials are prepared by a variety of severe plastic deformation methods, and these will be reviewed. Powder processing to prepare bulk nanostructured materials requires that the powders be consolidated by typical combinations of pressure and temperature, the latter leading to coarsening of the microstructure. The thermal stability of nanostructured materials will also be discussed. An example of bringing nanostructured materials to applications as structural materials will be described in terms of the cryomilling of powders and their consolidation.

  13. Potential of polarization lidar to provide profiles of CCN- and INP-relevant aerosol parameters

    Directory of Open Access Journals (Sweden)

    R. E. Mamouri

    2015-12-01

    Full Text Available We investigate the potential of polarization lidar to provide vertical profiles of aerosol parameters from which cloud condensation nucleus (CCN and ice nucleating particle (INP number concentrations can be estimated. We show that height profiles of number concentrations of aerosol particles with radius > 50 nm (APC50, reservoir of favorable CCN and with radius > 250 nm (APC250, reservoir of favorable INP, as well as profiles of the aerosol particle surface area concentration (ASC, used in INP parameterization can be retrieved from lidar-derived aerosol extinction coefficients (AEC with relative uncertainties of a factor of around 2 (APC50, and of about 25–50 % (APC250, ASC. Of key importance is the potential of polarization lidar to identify mineral dust particles and to distinguish and separate the aerosol properties of basic aerosol types such as mineral dust and continental pollution (haze, smoke. We investigate the relationship between AEC and APC50, APC250, and ASC for the main lidar wavelengths of 355, 532 and 1064 nm and main aerosol types (dust, pollution, marine. Our study is based on multiyear Aerosol Robotic Network (AERONET photometer observations of aerosol optical thickness and column-integrated particle size distribution at Leipzig, Germany, and Limassol, Cyprus, which cover all realistic aerosol mixtures of continental pollution, mineral dust, and marine aerosol. We further include AERONET data from field campaigns in Morocco, Cabo Verde, and Barbados, which provide pure dust and pure marine aerosol scenarios. By means of a simple relationship between APC50 and the CCN-reservoir particles (APCCCN and published INP parameterization schemes (with APC250 and ASC as input we finally compute APCCCN and INP concentration profiles. We apply the full methodology to a lidar observation of a heavy dust outbreak crossing Cyprus with dust up to 8 km height and to a case during which anthropogenic pollution dominated.

  14. Large area bulk superconductors

    Science.gov (United States)

    Miller, Dean J.; Field, Michael B.

    2002-01-01

    A bulk superconductor having a thickness of not less than about 100 microns is carried by a polycrystalline textured substrate having misorientation angles at the surface thereof not greater than about 15.degree.; the bulk superconductor may have a thickness of not less than about 100 microns and a surface area of not less than about 50 cm.sup.2. The textured substrate may have a thickness not less than about 10 microns and misorientation angles at the surface thereof not greater than about 15.degree.. Also disclosed is a process of manufacturing the bulk superconductor and the polycrystalline biaxially textured substrate material.

  15. Optical and structural properties of 100 MeV Fe{sup 9+} ion irradiated InP

    Energy Technology Data Exchange (ETDEWEB)

    Dubey, R. L., E-mail: radhekrishna.dubey@xaviers.edu [Department of Physics, St. Xavier’s College-Autonomous, Mumbai-400 001 (India); Department of Physics, University of Mumbai, Mumbai-400 032 (India); Dubey, S. K. [Department of Physics, University of Mumbai, Mumbai-400 032 (India); Bodhane, S. P. [Department of Physics, St. Xavier’s College-Autonomous, Mumbai-400 001 (India); Kanjilal, D. [Inter University Accelerator Centre, ArunaAsaf Ali, Marg,New Delhi-110 067 (India)

    2016-05-06

    Single crystal InP samples were irradiated with 100 MeV Fe{sup 9+} ions for ion fluences 1x10{sup 12} and 1x10{sup 13} cm{sup −2}. Optical properties of irradiated InP was investigated by Spectroscopic Ellipsometry and UV-VIS-NIR spectroscopy. The optical parameters like, refractive index, extinction coefficient, absorption coefficient is found to be fluence dependent near the surface as well as near the projected range. Small change in the optical parameters near the surface region as investigated by Spectroscopic Ellipsometry indicatesthat the surfaces of irradiated InP are similar to non-irradiated InP. This is also supported by RBS/C measurements. The UV-VIS-NIR study revealed the decrease in the band gap and increase in the defect concentration in the irradiated sample as a result of nuclear energy loss.

  16. Voltammetric Study and Determination of Phenylephrine Hydrochloride at INP-Nafion-Modified CPE Sensor Employing Differential Pulse Voltammetry

    Directory of Open Access Journals (Sweden)

    Zeinab Pourghobadi

    2014-03-01

    Full Text Available In this study, describes the voltammetric oxidation and determination of phenylephrine (PHE hydrochloride at a new chemically modified electrode. Iron nanoparticle (INPs was dispersed in Nafion solution to obtain a INP-Nafion-modified CPE for the voltammetric analysis of PHE .The electrochemical behaviour of PHE on INP-Nafion-modified CPE was studied, using cyclic voltammetry as a diagnostic technique. The effects of amount of INPs-Nafion dispersion, pH, and scan rate on the response of modified electrode for the oxidation of PHE were investigated. Using differential pulse voltammetry (DPV, the modified electrode indicated a dynamic linear range for quantitative determination of PHE in the range of 5 μM−130 μM, and the detection limit was estimated to be 0.76 μM. The method was developed for the determination of PHE in pharmaceutical samples with satisfactory results.

  17. Temperature coefficients and radiation induced DLTS spectra of MOCVD grown n(+)p InP solar cells

    Science.gov (United States)

    Walters, Robert J.; Statler, Richard L.; Summers, Geoffrey P.

    1991-01-01

    The effects of temperature and radiation on n(+)p InP solar cells and mesa diodes grown by metallorganic chemical vapor deposition (MOCVD) were studied. It was shown that MOCVD is capable of consistently producing good quality InP solar cells with Eff greater than 19 percent which display excellent radiation resistance due to minority carrier injection and thermal annealing. It was also shown that universal predictions of InP device performance based on measurements of a small group of test samples can be expected to be quite accurate, and that the degradation of an InP device due to any incident particle spectrum should be predictable from a measurement following a single low energy proton irradiation.

  18. Potential of polarization lidar to provide profiles of CCN- and INP-relevant aerosol parameters

    Science.gov (United States)

    Mamouri, Rodanthi-Elisavet; Ansmann, Albert

    2016-05-01

    We investigate the potential of polarization lidar to provide vertical profiles of aerosol parameters from which cloud condensation nucleus (CCN) and ice nucleating particle (INP) number concentrations can be estimated. We show that height profiles of particle number concentrations n50, dry considering dry aerosol particles with radius > 50 nm (reservoir of CCN in the case of marine and continental non-desert aerosols), n100, dry (particles with dry radius > 100 nm, reservoir of desert dust CCN), and of n250, dry (particles with dry radius > 250 nm, reservoir of favorable INP), as well as profiles of the particle surface area concentration sdry (used in INP parameterizations) can be retrieved from lidar-derived aerosol extinction coefficients σ with relative uncertainties of a factor of 1.5-2 in the case of n50, dry and n100, dry and of about 25-50 % in the case of n250, dry and sdry. Of key importance is the potential of polarization lidar to distinguish and separate the optical properties of desert aerosols from non-desert aerosol such as continental and marine particles. We investigate the relationship between σ, measured at ambient atmospheric conditions, and n50, dry for marine and continental aerosols, n100, dry for desert dust particles, and n250, dry and sdry for three aerosol types (desert, non-desert continental, marine) and for the main lidar wavelengths of 355, 532, and 1064 nm. Our study is based on multiyear Aerosol Robotic Network (AERONET) photometer observations of aerosol optical thickness and column-integrated particle size distribution at Leipzig, Germany, and Limassol, Cyprus, which cover all realistic aerosol mixtures. We further include AERONET data from field campaigns in Morocco, Cabo Verde, and Barbados, which provide pure dust and pure marine aerosol scenarios. By means of a simple CCN parameterization (with n50, dry or n100, dry as input) and available INP parameterization schemes (with n250, dry and sdry as input) we finally compute

  19. On the usage of classical nucleation theory in quantification of the impact of bacterial INP on weather and climate

    Science.gov (United States)

    Sahyoun, Maher; Wex, Heike; Gosewinkel, Ulrich; Šantl-Temkiv, Tina; Nielsen, Niels W.; Finster, Kai; Sørensen, Jens H.; Stratmann, Frank; Korsholm, Ulrik S.

    2016-08-01

    Bacterial ice-nucleating particles (INP) are present in the atmosphere and efficient in heterogeneous ice-nucleation at temperatures up to -2 °C in mixed-phase clouds. However, due to their low emission rates, their climatic impact was considered insignificant in previous modeling studies. In view of uncertainties about the actual atmospheric emission rates and concentrations of bacterial INP, it is important to re-investigate the threshold fraction of cloud droplets containing bacterial INP for a pronounced effect on ice-nucleation, by using a suitable parameterization that describes the ice-nucleation process by bacterial INP properly. Therefore, we compared two heterogeneous ice-nucleation rate parameterizations, denoted CH08 and HOO10 herein, both of which are based on classical-nucleation-theory and measurements, and use similar equations, but different parameters, to an empirical parameterization, denoted HAR13 herein, which considers implicitly the number of bacterial INP. All parameterizations were used to calculate the ice-nucleation probability offline. HAR13 and HOO10 were implemented and tested in a one-dimensional version of a weather-forecast-model in two meteorological cases. Ice-nucleation-probabilities based on HAR13 and CH08 were similar, in spite of their different derivation, and were higher than those based on HOO10. This study shows the importance of the method of parameterization and of the input variable, number of bacterial INP, for accurately assessing their role in meteorological and climatic processes.

  20. Growth and characterization of InP ringlike quantum-dot molecules grown by solid-source molecular beam epitaxy.

    Science.gov (United States)

    Jevasuwan, Wipakorn; Boonpeng, Poonyasiri; Panyakeow, Somsak; Ratanathammaphan, Somchai

    2010-11-01

    In this paper, we have studied the fabrication of InP ringlike quantum-dot molecules on GaAs(001) substrate grown by solid-source molecular beam epitaxy using droplet epitaxy technique and the effect of In deposition rate on the physical and optical properties of InP ringlike quantum-dot molecules. The In deposition rate is varied from 0.2 ML/s to 0.4, 0.8 and 1.6 ML/s. The surface morphology and cross-section were examined by ex-situ atomic force microscope and transmission electron microscope, respectively. The increasing of In deposition rate results in the decreasing of outer and inner diameters of InP ringlike quantum-dot molecules and height of InP quantum dots but increases the InP quantum dot and ringlike quantum-dot molecule densities. The photoluminescence peaks of InP ringlike quantum-dot molecules are blue-shifted and FWHM is narrower when In deposition rate is bigger.

  1. Electrostatic Stabilized InP Colloidal Quantum Dots with High Photoluminescence Efficiency.

    Science.gov (United States)

    Mnoyan, Anush N; Kirakosyan, Artavazd Gh; Kim, Hyunki; Jang, Ho Seong; Jeon, Duk Young

    2015-06-30

    Electrostatically stabilized InP quantum dots (QDs) showing a high luminescence yield of 16% without any long alkyl chain coordinating ligands on their surface are demonstrated. This is achieved by UV-etching the QDs in the presence of fluoric and sulfuric acids. Fluoric acid plays a critical role in selectively etching nonradiative sites during the ligand-exchange process and in relieving the acidity of the solution to prevent destruction of the QDs. Given that the InP QDs show high luminescence without any electrical barriers, such as long alkyl ligands or inorganic shells, this method can be applied for QD treatment for application to highly efficient QD-based optoelectronic devices.

  2. Low-Threshold Conjugated Polymer Distributed Feedback Lasers on InP Substrate

    Institute of Scientific and Technical Information of China (English)

    ZHANG Su-Mei; ZHANG Ding-Ke; MA Dong-Ge

    2008-01-01

    We demonstrate a low threshold polymer sofid state thin-film distributed feedback (DFB) laser on an InP substrate with the DFB structure.The used gain medium is conjugated polymer poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene](MEH-PPV) doped polystyrene (PS) and formed by drop-coating method.The second order Bragg scattering region on the InP substrate gave rise to strong feedback,thus a lazing emission at 638.9nm with a line width of 1.2nm is realized when pumped by a 532nm frequency-doubled Nd:YAG pulsed laser.The devices show a laser threshold as low as 7n J/pulse.

  3. Far field emission profile of pure wurtzite InP nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Bulgarini, Gabriele, E-mail: g.bulgarini@tudelft.nl; Reimer, Michael E.; Zwiller, Val [Kavli Institute of Nanoscience, Delft University of Technology, Delft (Netherlands); Dalacu, Dan; Poole, Philip J.; Lapointe, Jean [National Research Council, Ottawa, Ontario, K1A 0R6 (Canada)

    2014-11-10

    We report on the far field emission profile of pure wurtzite InP nanowires in comparison to InP nanowires with predominantly zincblende crystal structure. The emission profile is measured on individual nanowires using Fourier microscopy. The most intense photoluminescence of wurtzite nanowires is collected at small angles with respect to the nanowire growth axis. In contrast, zincblende nanowires present a minimum of the collected light intensity in the direction of the nanowire growth. Results are explained by the orientation of electric dipoles responsible for the photoluminescence, which is different from wurtzite to zincblende. Wurtzite nanowires have dipoles oriented perpendicular to the nanowire growth direction, whereas zincblende nanowires have dipoles oriented along the nanowire axis. This interpretation is confirmed by both numerical simulations and polarization dependent photoluminescence spectroscopy. Knowledge of the dipole orientation in nanostructures is crucial for developing a wide range of photonic devices such as light-emitting diodes, photodetectors, and solar cells.

  4. Monte Carlo investigation of avalanche multiplication process in thin InP avalanche photodiodes

    Institute of Scientific and Technical Information of China (English)

    WANG Gang; MA YuXiang

    2009-01-01

    An ensemble Monte Carlo simulation is presented to investigate the avalanche multiplication process in thin InP avalanche photodiodes (APDs). Analytical band structures are applied to the description of the conduction and valence band, and impact ionization is treated as an additional scattering mecha-nism with the Keldysh formula. Multiplication gain and excess noise factor of InP p~+-i-n~+ APDs aresimulated and obvious excess noise reduction is found in the thinner devices. The effect of dead space on excess noise in thin APD structures is investigated by the distribution of impact ionization events within the multiplication region. It is found that the dead space can suppress the feedback ionization events resulting in a more deterministic avalanche multiplication process and reduce the excess noise in thinner APDs.

  5. InP solid state detector for measurement of low energy solar neutrinos

    Energy Technology Data Exchange (ETDEWEB)

    Fukuda, Yoshiyuki, E-mail: fukuda@staff.miyakyo-u.ac.j [Faculty of Education, Miyagi University of Education, 149, Aobaku-aza-aoba, Sendai, Miyagi 980-0845 (Japan); Izawa, Toshiyuki [Solid State Division, Hamamatsu Photonics K.K. 1126-1, Ichino-cho, Hamamatsu, Shizuoka 435-8558 (Japan); Koshio, Yusuke; Moriyama, Shigetaka [Kamioka Observatory, Institute for Cosmic Ray Research, University of Tokyo, Higashi-Mozumi, Kamioka-cho, Hida, Gifu 506-1205 (Japan); Namba, Toshio [ICEPP, International Center for Elementary Particle Physics, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-0033 (Japan); Shiozawa, Masato [Kamioka Observatory, Institute for Cosmic Ray Research, University of Tokyo, Higashi-Mozumi, Kamioka-cho, Hida, Gifu 506-1205 (Japan)

    2010-11-01

    A large volume radiation detector using a semi-insulating Indium Phosphide (InP) wafer has been developed for Indium Project on Neutrino Observation for Solar interior (IPNOS) experiment. We have achieved the volume of 20 mm{sup 3}, and this is world largest one among InP detectors which observed {gamma}'s at hundred keV region. In spite of the depletion layer, most of charge generated by electron hole pair production are collected by an induction, and the charge collection efficiency and the energy resolution are obtained by 60% and 25%, respectively. We measured actual backgrounds related to {sup 115}In {beta} decay, and no significant background was found.

  6. Photoluminescence Imaging Characterization of Thin-Film InP

    Energy Technology Data Exchange (ETDEWEB)

    Johnston, Steve; Allende Motz, Alyssa; Moore, James; Zheng, Maxwell; Javey, Ali; Bermel, Peter

    2015-06-14

    Indium phosphide grown using a novel vapor-liquid-solid method is a promising low-cost material for III-V single-junction photovoltaics. In this work, we characterize the properties of these materials using photoluminescence (PL) imaging, time-resolved photoluminescence (TRPL), and microwave-reflection photoconductive decay (u-PCD). PL image data clearly shows the emergence of a self-similar dendritic growth network from nucleation sites, while zoomed-in images show grain structure and grain boundaries. Single photon TRPL data shows initial surface-dominated recombination, while two-photon excitation TRPL shows a lifetime of 10 ns. Bulk carrier lifetime may be as long as 35 ns as measured by u-PCD, which can be less sensitive to surface recombination.

  7. Surface characterization of InP trenches embedded in oxide using scanning probe microscopy

    Science.gov (United States)

    Mannarino, Manuel; Chintala, Ravi; Moussa, Alain; Merckling, Clement; Eyben, Pierre; Paredis, Kristof; Vandervorst, Wilfried

    2015-12-01

    Metrology for structural and electrical analyses at device level has been identified as one of the major challenges to be resolved for the sub-14 nm technology nodes. In these advanced nodes, new high mobility semiconductors, such as III-V compounds, are grown in narrow trenches on a Si substrate. Probing the nature of the defects, the defect density, and the role of processing steps on the surface of such structures are prime metrology requirements. In order to enable defect analysis on a (III-V) surface, a proper sample preparation for oxide removal is of primary importance. In this work, the effectiveness of different chemical cleanings and thermal annealing procedures is investigated on both blanket InP and oxide embedded InP trenches by means of scanning probe microscopy techniques. It is found that the most effective approach is a combination of an HCl-based chemical cleaning combined with a low-temperature thermal annealing leading to an oxide free surface with atomically flat areas. Scanning tunneling microscopy (STM) has been the preferred method for such investigations on blanket films due to its intrinsic sub-nm spatial resolution. However, its application on oxide embedded structures is non-trivial. To perform STM on the trenches of interest (generally <20 nm wide), we propose a combination of non-contact atomic force microscopy and STM using the same conductive atomic force microscopy tip Our results prove that with these procedures, it is possible to perform STM in narrow InP trenches showing stacking faults and surface reconstruction. Significant differences in terms of roughness and terrace formation are also observed between the blanket and the oxide embedded InP.

  8. Electrical and thermal characterization of single and multi-finger InP DHBTs

    DEFF Research Database (Denmark)

    Midili, Virginio; Nodjiadjim, V.; Johansen, Tom Keinicke

    2015-01-01

    This paper presents the characterization of single and multi-finger Indium Phosphide Double Heterojunction Bipolar transistors (InP DHBTs). It is used as the starting point for technology optimization. Safe Operating Area (SOA) and small signal AC parameters are investigated along with thermal...... characteristics. The results are presented comparing different device dimensions and number of fingers. This work gives directions towards further optimization of geometrical parameters and reduction of thermal effects....

  9. Bandgap Engineering of InP QDs Through Shell Thickness and Composition

    Energy Technology Data Exchange (ETDEWEB)

    Dennis, Allison M. [Los Alamos National Laboratory; Mangum, Benjamin D. [Los Alamos National Laboratory; Piryatinski, Andrei [Los Alamos National Laboratory; Park, Young-Shin [Los Alamos National Laboratory; Htoon, Han [Los Alamos National Laboratory; Hollingsworth, Jennifer A. [Los Alamos National Laboratory

    2012-06-21

    Fields as diverse as biological imaging and telecommunications utilize the unique photophysical and electronic properties of nanocrystal quantum dots (NQDs). The development of new NQD compositions promises material properties optimized for specific applications, while addressing material toxicity. Indium phosphide (InP) offers a 'green' alternative to the traditional cadmium-based NQDs, but suffers from extreme susceptibility to oxidation. Coating InP cores with more stable shell materials significantly improves nanocrystal resistance to oxidation and photostability. We have investigated several new InP-based core-shell compositions, correlating our results with theoretical predictions of their optical and electronic properties. Specifically, we can tailor the InP core-shell QDs to a type-I, quasi-type-II, or type-II bandgap structure with emission wavelengths ranging from 500-1300 nm depending on the shell material used (ZnS, ZnSe, CdS, or CdSe) and the thickness of the shell. Single molecule microscopy assessments of photobleaching and blinking are used to correlate NQD properties with shell thickness.

  10. Enhanced luminescence of near-surface quantum wells passivated in situ by InP

    Energy Technology Data Exchange (ETDEWEB)

    Lipsanen, H.; Sopanen, M.; Taskinen, M.; Tulkki, J. [Helsinki Univ. of Technology, Espoo (Finland). Optoelectronics Lab.; Ahopelto, J. [VTT Electronics, Espoo (Finland)

    1996-12-31

    The authors have studied the optical properties of MOVPE grown Al{sub x}Ga{sub 1{minus}x}As/GaAs structures passivated by in situ deposition of InP on the surface. One monolayer of InP was used for the passivation. The surface recombination was studied by photoluminescence measurements of near-surface Al{sub 0.22}Ga{sub 0.78}As/GaAs quantum wells. The luminescence intensity of the passivated samples increased by about five orders of magnitude for quantum wells located at less than 5 nm from the surface as compared to unpassivated samples. Furthermore, the authors observed a blueshift of 15 meV for a passivated surface quantum well. The effect of the thin InP layer on the Fermi level pinning on the surface was studied by photoreflectance of a surface-i-n{sup +} sample. The pinning position was reduced by 0.3 eV from the mid-bandgap value.

  11. Optical reflectance studies of highly specular anisotropic nanoporous (111) InP membrane

    Science.gov (United States)

    Steele, J. A.; Lewis, R. A.; Sirbu, L.; Enachi, M.; Tiginyanu, I. M.; Skuratov, V. A.

    2015-04-01

    High-precision optical angular reflectance measurements are reported for a specular anisotropic nanoporous (111) InP membrane prepared by doping-assisted wet-electrochemical etching. The membrane surface morphology was investigated using scanning electron microscope imaging and revealed a quasi-uniform and self-organized nanoporous network consisting of semiconductor ‘islands’ in the sub-wavelength regime. The optical response of the nanoporous InP surface was studied at 405 nm (740 THz; UV), 633 nm (474 THz; VIS) and 1064 nm (282 THz; NIR), and exhibited a retention of basic macro-dielectric properties. Refractive index determinations demonstrate an optical anisotropy for the membrane which is strongly dependent on the wavelength of incident light, and exhibits an interesting inversion (positive anisotropy to negative) between 405 and 633 nm. The inversion of optical anisotropy is attributed to a strongly reduced ‘metallic’ behaviour in the membrane when subject to above-bandgap illumination. For the simplest case of sub-bandgap incident irradiation, the optical properties of the nanoporous InP sample are analysed in terms of an effective refractive index neff and compared to effective media approximations.

  12. Weakly doped InP layers prepared by liquid phase epitaxy using a modulated cooling rate

    Science.gov (United States)

    Krukovskyi, R.; Mykhashchuk, Y.; Kost, Y.; Krukovskyi, S.; Saldan, I.

    2017-04-01

    Epitaxial structures based on InP are widely used to manufacture a number of devices such as microwave transistors, light-emitting diodes, lasers and Gunn diodes. However, their temporary instability caused by heterogeneity of resistivity along the layer thickness and the influence of various external or internal factors prompts the need for the development of a new reliable technology for their preparation. Weak doping by Yb, Al and Sn together with modulation of the cooling rate applied to prepare InP epitaxial layers is suggested to be adopted within the liquid phase epitaxy (LPE) method. The experimental results confirm the optimized conditions created to get a uniform electron concentration in the active n-InP layer. A sharp profile of electron concentration in the n+-InP(substrate)/n-InP/n+-InP epitaxial structure was observed experimentally at the proposed modulated cooling rate of 0.3 °С-1.5 °С min-1. The proposed technological method can be used to control the electrical and physical properties of InP epitaxial layers to be used in Gunn diodes.

  13. Aqueous bromine etching of InP: a specific surface chemistry

    Energy Technology Data Exchange (ETDEWEB)

    Causier, A.; Bouttemy, M.; Gerard, I.; Aureau, D.; Vigneron, J.; Etcheberry, A. [Institut Lavoisier de Versailles, Versailles-Saint-Quentin University, UMR CNRS 8180, 45 Av. des Etats-Unis, 78035 Versailles (France)

    2012-06-15

    The n -InP behaviour in HBr (0.1-1.0 M)/Br{sub 2} (1.25 x 10{sup -2}M) aqueous solutions is studied by AAS, XPS and SEM-FEG. Indium AAS-titrations of the HBr/Br{sub 2} solutions demonstrate that InP undergoes an etching mechanism whatever the HBr/Br{sub 2} formulation. The etching process is always linear with time but its rate depends on the HBr concentration. XPS analyses permit to link the apparent slow-down of the dissolution process when decreasing the HBr molarity from 1.0 M to 0.1 M to the presence of a mixed (In,P){sub ox} oxide layer on the surface. Therefore, the dissolution process of InP in HBr/Br{sub 2} solution appears to be ruled by the surface chemical state (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  14. Green syntheses, v.1

    CERN Document Server

    Tundo, Pietro

    2014-01-01

    Introduction to the Green Syntheses SeriesPietro Tundo and John AndraosApplication of Material Efficiency Metrics to Assess Reaction Greenness-Illustrative Case Studies from Organic SynthesesJohn AndraosReaction 1: Synthesis of 3-Benzyl-5-Methyleneoxazolidin-2-one from N-Benzylprop-2-yn-1-Amine and CO2Qing-Wen Song and Liang-Nian HeReaction 2: Synthesis of the 5-Membered Cyclic Carbonates from Epoxides and CO2Qing-Wen Song, Liang-Nian HePart I: Green Methods for the Epoxidation of

  15. Bulk chemicals from biomass

    NARCIS (Netherlands)

    Haveren, van J.; Scott, E.L.; Sanders, J.P.M.

    2008-01-01

    Given the current robust forces driving sustainable production, and available biomass conversion technologies, biomass-based routes are expected to make a significant impact on the production of bulk chemicals within 10 years, and a huge impact within 20-30 years. In the Port of Rotterdam there is a

  16. Auctioning Bulk Mobile Messages

    NARCIS (Netherlands)

    S. Meij (Simon); L-F. Pau (Louis-François); H.W.G.M. van Heck (Eric)

    2003-01-01

    textabstractThe search for enablers of continued growth of SMS traffic, as well as the take-off of the more diversified MMS message contents, open up for enterprises the potential of bulk use of mobile messaging , instead of essentially one-by-one use. In parallel, such enterprises or value added

  17. Bulk chemicals from biomass

    NARCIS (Netherlands)

    Haveren, van J.; Scott, E.L.; Sanders, J.P.M.

    2008-01-01

    Given the current robust forces driving sustainable production, and available biomass conversion technologies, biomass-based routes are expected to make a significant impact on the production of bulk chemicals within 10 years, and a huge impact within 20-30 years. In the Port of Rotterdam there is a

  18. Synthesized night vision goggle

    Science.gov (United States)

    Zhou, Haixian

    2000-06-01

    A Synthesized Night Vision Goggle that will be described int his paper is a new type of night vision goggle with multiple functions. It consists of three parts: main observing system, picture--superimposed system (or Cathode Ray Tube system) and Charge-Coupled Device system.

  19. Defects in mitophagy promote redox-driven metabolic syndrome in the absence of TP53INP1.

    Science.gov (United States)

    Seillier, Marion; Pouyet, Laurent; N'Guessan, Prudence; Nollet, Marie; Capo, Florence; Guillaumond, Fabienne; Peyta, Laure; Dumas, Jean-François; Varrault, Annie; Bertrand, Gyslaine; Bonnafous, Stéphanie; Tran, Albert; Meur, Gargi; Marchetti, Piero; Ravier, Magalie A; Dalle, Stéphane; Gual, Philippe; Muller, Dany; Rutter, Guy A; Servais, Stéphane; Iovanna, Juan L; Carrier, Alice

    2015-03-30

    The metabolic syndrome covers metabolic abnormalities including obesity and type 2 diabetes (T2D). T2D is characterized by insulin resistance resulting from both environmental and genetic factors. A genome-wide association study (GWAS) published in 2010 identified TP53INP1 as a new T2D susceptibility locus, but a pathological mechanism was not identified. In this work, we show that mice lacking TP53INP1 are prone to redox-driven obesity and insulin resistance. Furthermore, we demonstrate that the reactive oxygen species increase in TP53INP1-deficient cells results from accumulation of defective mitochondria associated with impaired PINK/PARKIN mitophagy. This chronic oxidative stress also favors accumulation of lipid droplets. Taken together, our data provide evidence that the GWAS-identified TP53INP1 gene prevents metabolic syndrome, through a mechanism involving prevention of oxidative stress by mitochondrial homeostasis regulation. In conclusion, this study highlights TP53INP1 as a molecular regulator of redox-driven metabolic syndrome and provides a new preclinical mouse model for metabolic syndrome clinical research.

  20. Radiative Bulk Viscosity

    CERN Document Server

    Chen, X

    2001-01-01

    Viscous resistance to changes in the volume of a gas arises when different degrees of freedom have different relaxation times. Collisions tend to oppose the resulting departures from equilibrium and, in so doing, generate entropy. Even for a classical gas of hard spheres, when the mean free paths or mean flight times of constituent particles are long, we find a nonvanishing bulk viscosity. Here we apply a method recently used to uncover this result for a classical rarefied gas to radiative transfer theory and derive an expression for the radiative stress tensor for a gray medium with absorption and Thomson scattering. We determine the transport coefficients through the calculation of the comoving entropy generation. When scattering dominates absorption, the bulk viscosity becomes much larger than either the shear viscosity or the thermal conductivity.

  1. Studies on semiconductors based on InP with sub-ps response times; Untersuchungen an auf InP basierenden Halbleitern mit sub-ps Responsezeiten

    Energy Technology Data Exchange (ETDEWEB)

    Biermann, K.

    2007-06-28

    The present work describes investigation of new material concepts accomplished using molecular-beam-epitaxy (MBE) growth for application in ultra-fast photonic components. Nominally undoped and Be doped GaInAs/AlInAs multiple-quantumwell structures (MQW) were grown by MBE at growth temperatures down to 100 C (LT-MBE) on semi-insulating InP substrates. Crystalline, electric and optical properties of as-grown and annealed structures were investigated. Energy states near the conduction band of GaInAs determine the electrical and optical properties of LT-MQWs. The dynamics of charge carrier relaxation was studied by means of pump and probe experiments. Measurements of the differential transmission when excited by an additional cw laser and measurements utilizing two closely sequenced pump pulses support the capability of Be doped as-grown (annealed) LT GaInAs/AlInAs MQW structures for use in optical switches at switching frequencies in the 1 Tbit/s (250 Gbit/s) range. The voltage-induced change of interband transmission of InP based quantumcascade-lasers (QCL) during pulsed mode operation was analyzed by means of 8 band k.p calculations. The impacts of varying charge carrier distributions and of electrically heated samples can be neglected compared to the dominating effect of the electrical field on the interband transmission. The impact of MBE growth parameters on the interface quality of AlAsSb/ GaInAs heterostructures were determined by means of Hall measurements, temperature- and intensity-dependent PL measurements and spectral measurements of the interband- and intersubband-absorption. The impact of In segregation and Sb diffusion on the intersubband absorption was analyzed on the basis of bandstructure calculations. Intersubband transitions at wavelengths of about 1.8 {mu}m (1.55 {mu}m) were successfully achieved in MQW (coupled QW) structures. (orig.)

  2. InP by Planar Reactive Deposition and GaAs by Low Pressure Metal Organic Chemical Vapor Deposition.

    Science.gov (United States)

    1981-02-01

    This inter- pretation is consistent with the fact that In2S3 is quite stable,(L7,18) whereas Cd2P 3 is quite volatile. (19) InP did not form until the...hypothesis regarding InP grain boundary passivation. Besides InP and CdS, the compounds Cd 2P3 , CdIn 2 S4 (Ref. 20) and (CdS)3x - ( In2S3 ).x (Ref. 18...PROCESSING: 2HRSAT425 C CdS +,(BARS) 1 GLASS SIDE VIEW I n (S)~,I (DOTS)~ (BARS) In2S3 (DOTS) (Cd) Figure 6. Scanning electron microscope (left) and

  3. Synthesis and properties of ultra-long InP nanowires on glass

    Science.gov (United States)

    Dhaka, Veer; Pale, Ville; Khayrudinov, Vladislav; Kakko, Joona-Pekko; Haggren, Tuomas; Jiang, Hua; Kauppinen, Esko; Lipsanen, Harri

    2016-12-01

    We report on the synthesis of Au-catalyzed InP nanowires (NWs) on low-cost glass substrates. Ultra-dense and ultra-long (up to ˜250 μm) InP NWs, with an exceptionally high growth rate of ˜25 μm min-1, were grown directly on glass using metal organic vapor phase epitaxy (MOVPE). Structural properties of InP NWs grown on glass were similar to the ones grown typically on Si substrates showing many structural twin faults but the NWs on glass always exhibited a stronger photoluminescence (PL) intensity at room temperature. The PL measurements of NWs grown on glass reveal two additional prominent impurity related emission peaks at low temperature (10 K). In particular, the strongest unusual emission peak with an activation energy of 23.8 ± 2 meV was observed at 928 nm. Different possibilities including the role of native defects (phosphorus and/or indium vacancies) are discussed but most likely the origin of this PL peak is related to the impurity incorporation from the glass substrate. Furthermore, despite the presence of suspected impurities, the NWs on glass show outstanding light absorption in a wide spectral range (60%-95% for λ = 300-1600 nm). The optical properties and the NW growth mechanism on glass is discussed qualitatively. We attribute the exceptionally high growth rate mostly to the atmospheric pressure growth conditions of our MOVPE reactor and stronger PL intensity on glass due to the impurity doping. Overall, the III-V NWs grown on glass are similar to the ones grown on semiconductor substrates but offer additional advantages such as low-cost and light transparency.

  4. Tunnel diode collector contact in InP based PNP heterojunction bipolar transistors

    Science.gov (United States)

    Shamir, N.; Ritter, D.; Cytermann, C.

    2002-06-01

    A tunnel diode collector contact to InP based PNP heterojunction bipolar transistors (HBTs) is suggested and demonstrated. The additional heavily doped n-type contact layer replaces the thick p-type contact layer required in conventional structures. The thermal and electrical properties of the collector contact layer thus become similar to those of NPN HBTs. A secondary ion mass spectroscopy study explores the maximum tin doping level that can be obtained in the base. Finally, the temperature dependence of the current gain is presented and interpreted.

  5. Confinement effect in a quantum well dot induced by an InP stressor

    Science.gov (United States)

    Tulkki, J.; Heinämäki, A.

    1995-09-01

    We have calculated the confinement effect in an In1-xGaxAs/GaAs quantum well dot induced by a dislocation-free InP stressor island. The energy levels were calculated by including the strain interaction and the band-edge confinement in the Luttinger-Kohn Hamiltonian. The maximum level spacing for the dipole-allowed interband E1-->HH1 line spectrum was 20 meV. Our calculation also gives excellent agreement with recent measurements [H. Lipsanen, M. Sopanen, and J. Ahopelto, Phys. Rev. B 51, 13 868 (1995)] and provides indirect evidence of screened Coulomb interaction, tentatively addressed to slow carrier relaxation.

  6. Implantación iónica en InP para aplicaciones en dispositivos

    OpenAIRE

    Martín Pacheco, Jaime Miguel

    1995-01-01

    La presente tesis muestra en primer lugar los sistemas de control diseñados y desarrollados para conseguir el perfecto funcionamiento del implantador de la facultad de físicas. Se presenta luego un completo estudio de la obtención por implantación de capas tipo n (por implantaciones de si y si/p), tipo p (con mg, mg/p o mg/ar) y capas de alta resistividad (por he y ti) en inp, tanto desde el punto de vista eléctrico (medidas de resistividad y efecto hall y de sims) como óptico (por fotolumini...

  7. Surface organization of homoepitaxial InP films grown by metalorganic vapor-phase epitaxy

    OpenAIRE

    Gocalinska, A.; Manganaro, M.; Vvedensky, D. D.; Pelucchi, E.

    2012-01-01

    We present a systematic study of the morphology of homoepitaxial InP films grown by metalorganic vapor-phase epitaxy which are imaged with ex situ atomic force microscopy. These films show a dramatic range of different surface morphologies as a function of the growth conditions and substrate (growth temperature, V/III ratio, and miscut angle < 0.6deg and orientation toward A or B sites), ranging from stable step flow to previously unreported strong step bunching, over 10 nm in height. These o...

  8. Growth temperature dependence of exciton lifetime in wurtzite InP nanowires grown on silicon substrates

    Science.gov (United States)

    Chauvin, N.; Hadj Alouane, M. H.; Anufriev, R.; Khmissi, H.; Naji, K.; Patriarche, G.; Bru-Chevallier, C.; Gendry, M.

    2012-01-01

    InP nanowires grown on silicon substrate are investigated using time-resolved spectroscopy. A strong modification of the exciton lifetime is observed (from 0.11 to 1.2 ns) when the growth temperature is increased from 340 °C to 460 °C. This strong dependence is not related to the density of zinc-blende insertions in the wurtzite nanowires or to the wurtzite exciton linewidth. The excitation power dependence of the lifetime and linewidth is investigated, and these results allow us to interpret the growth temperature dependence on the lifetime as a consequence of the reduction of the surface recombination velocity with the growth temperature.

  9. Optical anisotropy in InP string-like aligned quantum dots

    Science.gov (United States)

    Kim, Yongmin; Song, J. D.; Han, I. K.

    2014-06-01

    InP quantum dots were grown by using the molecular beam epitaxy technique. The quantum dots were connected and composed a string-like one-dimensional structure in the [1-10] crystal direction due to the strain field along the [110] direction. Two prominent photoluminescence transitions from normal quantum dots and string-like one-dimensional structures were observed and showed strong optical emission anisotropy. Both peaks also showed blue-shifts while rotating the emission polarization from the [1-10] to the [110] direction. Such optical transition behaviors are the consequence of valence band mixing caused by the strain field along the [110] crystal direction.

  10. Langmuir-Blodgett monolayers of InP quantum dots with short chain ligands.

    Science.gov (United States)

    Lambert, K; Wittebrood, L; Moreels, I; Deresmes, D; Grandidier, B; Hens, Z

    2006-08-15

    We demonstrate the organization of nearly monodisperse colloidal InP quantum dots at the air/water interface in Langmuir monolayers. The organization of the particles is monitored in situ by surface pressure-surface area measurements and ex situ by AFM measurements on films transferred to mica by Langmuir-Blodgett deposition. The influence of different ligands on the quality of the monolayer formed has been studied. We show that densely packed monolayers with little holes can be formed using short chain ligands like pyridine and pentamethylene sulfide. The advantage of using short chain ligands for electron tunneling to or from the quantum dots is demonstrated using scanning tunneling spectroscopy.

  11. Influence of Grain Size on Electrical and Optical Properties of InP Films

    Institute of Scientific and Technical Information of China (English)

    Mustafa (O)ztas

    2008-01-01

    InP film samples were prepared by spray pyrolysis technique using aqueous solutions of lnCl3 and Na2HPO4,which were atomized with compressed air as carrier gas onto glass substrates at 500℃ with different thicknesses of the films. It is found that the resistivity of the polycrystalline films strongly depends on the grain size. It is observed that the grain size of the films increase with the decrease of the energy band gap and strain of the film.The changes observed in the energy band gap and strain related to the film grain size of the films are discussed in detail.

  12. Hydrogen passivation of N(+)-P and P(+)-N heteroepitaxial InP solar cell structures

    Science.gov (United States)

    Chatterjee, Basab; Davis, William C.; Ringel, Steve A.; Hoffman, Richard, Jr.

    1996-01-01

    Dislocations and related point defect complexes caused by lattice mismatch currently limit the performance of heteroepitaxial InP cells by introducing shunting paths across the active junction and by the formation of deep traps within the base region. We have previously demonstrated that plasma hydrogenation is an effective and stable means to passivate the electrical activity of such defects in specially designed heteroepitaxial InP test structures to probe hydrogen passivation at typical base depths within a cell structure. In this work, we present our results on the hydrogen passivation of actual heteroepitaxial n-p and p-n InP cell structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). We have found that a 2 hour exposure to a 13.56 MHz hydrogen plasma at 275 C reduces the deep level concentration in the base regions of both n(+)-p and p(+)-n heteroepitaxial InP cell structures from as-grown values of 5-7 x 10(exp 14) cm(exp -3), down to 3-5 x 10(exp 12) cm(exp -3). All dopants were successfully reactivated by a 400 C, 5 minute anneal with no detectable activation of deep levels. One to five analysis indicated a subsequent approximately 100 fold decrease in reverse leakage current at -1 volt reverse bias, and an improved built in voltage for the p(+)-n structures. In addition to being passivated, dislocations are also shown to participate in secondary interactions during hydrogenation. We find that the presence of dislocations enhances hydrogen diffusion into the cell structure, and lowers the apparent dissociation energy of Zn-H complexes from 1.19 eV for homoepitaxial Zn-doped InP to 1.12 eV for heteroepitaxial Zn-doped InP. This is explained by additional hydrogen trapping at dislocations subsequent to the reactivation of Zn dopants after hydrogenation.

  13. Hydrogen Passivation of N(+)P and P(+)N Heteroepitaxial InP Solar Cell Structures

    Science.gov (United States)

    Chatterjee, B.; Davis, W. C.; Ringel, S. A.; Hoffman, R., Jr.

    1995-01-01

    Dislocations and related point defect complexes caused by lattice mismatch currently limit the performance of heteroepitaxial InP cells by introducing shunting paths across the active junction and by the formation of deep traps within the base region. We have previously demonstrated that plasma hydrogenation is an effective and stable means to passivate the electrical activity of such defects in specially designed heteroepitaxial InP test structures to probe hydrogen passivation at typical base depths within a cell structure. In this work, we present our results on the hydrogen passivation of actual heteroepitaxial n(+)p and p(+)n InP cell structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). We have found that a 2 hour exposure to a 13.56 MHz hydrogen plasma at 275 C reduces the deep level concentration in the base regions of both n(+)p and p(+)n heteroepitaxial InP cell structures from as-grown values of 5 - 7 x 10(exp 14)/cc, down to 3 - 5 x 10(exp 12)/cc. All dopants were successfully reactivated by a 400 C, 5 minute anneal With no detectable activation of deep levels. I-V analysis indicated a subsequent approx. 100 fold decrease In reverse leakage current at -1 volt reverse bias, and an improved built in voltage for the p(+)n structures. ln addition to being passivated,dislocations are also shown to participate in secondary interactions during hydrogenation. We find that the presence of dislocations enhances hydrogen diffusion into the cell structure, and lowers the apparent dissociation energy of Zn-H complexes from 1.19 eV for homoepitaxial Zn-doped InP to 1.12 eV for heteroepitaxial Zn-doped InP. This is explained by additional hydrogen trapping at dislocations subsequent to the reactivation of Zn dopants after hydrogenation.

  14. Obtaining of high-quality InP active layers in geterostructure’s composition for Gunn diodes

    Directory of Open Access Journals (Sweden)

    Vakiv M. M.

    2010-06-01

    Full Text Available It is shown that for epitaxial InP layers obtained by liquid-phase epitaxy complex dopping of indium melts by optimal concentrations of rare-earth Yb and isovalent element Al promotes useful increase of cleaning effect from background impurities and leads to growth of its structural perfection. The concentration of electrons in InP layers decreases and their mobility increases on optimal amounts of Yb and Al in the melt. This technology may be used in producing structures for Gunn diodes, photoreceivers and other optoelectronic devices.

  15. Impact of substrate-induced strain and surface effects on the optical properties of InP nanowires

    Science.gov (United States)

    Anufriev, Roman; Chauvin, Nicolas; Khmissi, Hammadi; Naji, Khalid; Gendry, Michel; Bru-Chevallier, Catherine

    2012-08-01

    Wurtzite InP nanowires (NWs), transferred onto various substrates, were investigated by low temperature micro-photoluminescence. A clear PL emission shift, depending on the substrate, is observed and attributed to the substrate-induced strain, generated due to the difference in the thermal expansion coefficients of the InP NWs and the host-substrate during the sample cooling. Moreover, a blueshift of the PL emission peak is observed as the excitation power is increased. This effect, which is not observed on the as-grown sample, is thus a consequence of the host substrate and not an intrinsic property of the nanowires.

  16. InP Self Assembled Quantum Dot Lasers Grown on GaAs Substrates by Metalorganic Chemical Vapor Deposition

    Science.gov (United States)

    2002-01-01

    GaAs (100) substrates by MOCVD. InP quantum dots grown on In(0.5)Al(0.3)Ga(0.2)P have a high density on the order of about 1 - 2 x 10/sq cm with a...dominant size of about 10-15 nm for 7.5 ML growth. (1) These In(0.5)Al(0.3)Ga(0.2)P/ InP quantum dots have previously been characterized by atomic-force

  17. Concepts for connectivity and interoperability of world space data networks: INPE proposal to CCSDS/Panel 3

    Science.gov (United States)

    Bergamini, E. W.

    1983-05-01

    Concepts are presented for an architectural end-to-end reference model based on the identification of classes of applications and products to be offered by services required to exchange data in operational support of space data systems. An Internetwork Transfer Frame (ITF) structure and basic concepts of a protocol are proposed for operational interconnection of data networks. The upward compatibility of these concepts with the higher layers of a standard data interchange structure (SDIS) model is also considered, based on INPE proposal to CCSDS/PANEL 2. Implementation aspects of the proposed model are also presented with respect to INPE's network.

  18. Single-photon emission from InAsP quantum dots embedded in density-controlled InP nanowires

    Science.gov (United States)

    Yanase, Shougo; Sasakura, Hirotaka; Hara, Shinjiro; Motohisa, Junichi

    2017-04-01

    We attempted to control the density and size of InP-based nanowires (NWs) and nanowire quantum dots (NW-QDs) during selective-area metalorganic vapor phase epitaxy. InP nanowire arrays with a 5 µm pitch and an average NW diameter d of 67 nm were successfully grown by optimization of growth conditions. InAsP quantum dots were embedded in these density-controlled InP NW arrays, and clear single-photon emission and exciton-biexciton cascaded emission were confirmed by excitation-dependent photoluminescence and photon correlation measurements.

  19. Growth and characterization of epitaxial SrF2 on InP(100)

    Science.gov (United States)

    Sinharoy, S.; Hoffman, R. A.; Rieger, J. H.; Warner, J. D.; Bhasin, K. B.

    1986-01-01

    The epitaxial growth of 100-262.5-nm SrF2 films on n-type and p-type (100)InP in a conventional baked UHV system at base pressure about 200 ptorr, temperature 250-350 C, and growth rate from less than 100 to about 200 pm/s. Substrates are chemicomechanically polished, degreased, bombarded with 500-eV Ar ions for 3-4 min at 350 C, and annealed for 23-30 min at 350 C, producing a slightly In-rich (In/P = 1.02) In-island-free surface with a (4 x 1) or (1 x 1) LEED structure. Films grown at 350 C and less than 100 pm/s are found to be smooth and free of cracks in most cases, with a highly faceted (1 x 1) LEED structure. The electrical properties of the SrF2 films are found to be acceptable only when the ohmic contacts are applied prior to the substrate prior to SrF2 growth.

  20. Raman investigations on nitrogen ion implantation effects on semi-insulating InP

    CERN Document Server

    Santhakumar, K; Kesavamoorthy, R; Magudapathy, P; Nair, K G M; Ravichandran, V

    2002-01-01

    Raman scattering measurements on liquid-encapsulated Czochralski-grown Fe-doped semi-insulating InP(1 0 0) single crystal substrates have been carried out before and after 120 keV N sup + implantation for various doses from 10 sup 1 sup 3 to 10 sup 1 sup 5 cm sup - sup 2 and also after post-implantation rapid thermal annealing of these samples. It is observed that LO phonon mode frequency decreases and full width at half maximum (FWHM) increases with fluence due to implantation-induced lattice damage. Forbidden Raman TO mode in (1 0 0) cut InP is observed at the doses of 5x10 sup 1 sup 3 and 5x10 sup 1 sup 4 cm sup - sup 2. This might have appeared due to the polycrystalline and/or misoriented regions created during implantation. TO mode is not observed for high doses in as-implanted samples due to excessive lattice damage induced by the implantation. On rapid thermal annealing at 573 K for 30 s, the implanted samples show a partial recovery of LO phonon mode frequency and FWHM due to partial annealing of the...

  1. The design and manufacture of a notch structure for a planar InP Gunn diode

    Institute of Scientific and Technical Information of China (English)

    Bai Yang; Jia Rui; Wu De-Qi; Jin Zhi; Liu Xin-Yu

    2013-01-01

    A planar InP-based Gunn diode with a notch doping structure is designed and fabricated for integration into millimeter-wave and terahertz integrated circuits.We design two kinds of InP-based Gunn diodes.One has a fixed diameter of cathode area,but has variable spacing between anode and cathode; the other has fixed spacing,but a varying diameter.The threshold voltage and saturated current exhibit their strong dependences on the spacing (10 μm-20 μm) and diameter (40 μm-60 μm) of the InP Gunn diode.The threshold voltage is approximately 4.5 V and the saturated current is in a range of 293 mA-397 mA.In this work,the diameter of the diode and the space between anode and cathode are optimized.The devices are fabricated using a wet etching technique and show excellent performances.The results strongly suggest that low-cost and reliable InP planar Gunn diodes can be used as single chip terahertz sources.

  2. The effect of nitrogen implantation on structural changes in semi-insulating InP

    Energy Technology Data Exchange (ETDEWEB)

    Santhakumar, K.; Jayavel, P.; Reddy, G.L.N.; Sastry, V.S.; Nair, K.G.M.; Ravichandran, V. E-mail: vravichandran@vsnl.com

    2003-12-01

    110 keV nitrogen ions (N{sup +}) of fluences 1 x 10{sup 14}-1 x 10{sup 17} cm{sup -2} have been implanted in liquid encapsulated Czochralski grown Fe-doped semi-insulating indium phosphide (InP) single crystal substrates. Grazing incidence X-ray diffraction measurements on as-grown and implanted samples have been carried out and analyzed. At all above fluences, a broad hump in the region of InP(1 1 1) peaks is observed. It might have resulted from implantation-induced misoriented grains along certain preferred orientations. The peak observed at a d-value of 1.77 A for all the fluences becomes more pronounced as the implantation fluence increases up to 1 x 10{sup 16} cm{sup -2}. This could indicate formation of an Indium phosphide nitride alloy. Post-implantation annealing reduces the structural defects and assists in the growth of the nitride phase.

  3. The design and manufacture of a notch structure for a planar InP Gunn diode

    Science.gov (United States)

    Bai, Yang; Jia, Rui; Wu, De-Qi; Jin, Zhi; Liu, Xin-Yu

    2013-02-01

    A planar InP-based Gunn diode with a notch doping structure is designed and fabricated for integration into millimeter-wave and terahertz integrated circuits. We design two kinds of InP-based Gunn diodes. One has a fixed diameter of cathode area, but has variable spacing between anode and cathode; the other has fixed spacing, but a varying diameter. The threshold voltage and saturated current exhibit their strong dependences on the spacing (10 μm-20 μm) and diameter (40 μm-60 μm) of the InP Gunn diode. The threshold voltage is approximately 4.5 V and the saturated current is in a range of 293 mA-397 mA. In this work, the diameter of the diode and the space between anode and cathode are optimized. The devices are fabricated using a wet etching technique and show excellent performances. The results strongly suggest that low-cost and reliable InP planar Gunn diodes can be used as single chip terahertz sources.

  4. Conductivity, Hall and magnetoresistance effect measurements on SI GaAs and InP

    Energy Technology Data Exchange (ETDEWEB)

    Acar, S.; Kasap, M. [Department of Physics, Faculty of Science and Arts, University of Gazi, Teknikokullar, 06500 Ankara (Turkey)

    2004-05-01

    The conductivity, Hall effect and magnetoresistance quantities in semi-insulating undoped GaAs and Fe-doped GaAs and InP grown by the LEC technique have been measured in the temperature range 300-420 K. It is shown that mixed conductivity is present in all samples. The experimental data were analyzed using a two-band model including electron and hole transport. A good fit has been obtained self-consistently to both conductivity and mobility. The single-band parameters have been extracted from the measured data in the studied temperature range. From ln (vertical stroke R{sub H,} {sub 0} vertical stroke T {sup 3/2}) and {sigma} vs T {sup -1} plots, activation energies of 0.77 and 0.65 eV have also been observed for GaAs and InP, respectively. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  5. Method for synthesizing HMX

    Science.gov (United States)

    McGuire, Raymond R.; Coon, Clifford L.; Harrar, Jackson E.; Pearson, Richard K.

    1984-01-01

    A method and apparatus for electrochemically synthesizing N.sub.2 O.sub.5 cludes oxidizing a solution of N.sub.2 O.sub.4 /HNO.sub.3 at an anode, while maintaining a controlled potential between the N.sub.2 O.sub.4 /HNO.sub.3 solution and the anode. A potential of about 1.35 to 2.0 V vs. SCE is preferred, while a potential of about 1.80 V vs. SCE is most preferred. Thereafter, the N.sub.2 O.sub.5 is reacted with either 1.5-diacetyl-3,7-dinitro-1,3,5,7-tetraazacyclooctane (DADN) or 1,3,5,7-tetraacetyl-1,3,5,7-tetraazacyclooctane (TAT) to form cyclotetramethylenetetraamine (HMX).

  6. Bulk-Fill Resin Composites

    DEFF Research Database (Denmark)

    Benetti, Ana Raquel; Havndrup-Pedersen, Cæcilie; Honoré, Daniel;

    2015-01-01

    the restorative procedure. The aim of this study, therefore, was to compare the depth of cure, polymerization contraction, and gap formation in bulk-fill resin composites with those of a conventional resin composite. To achieve this, the depth of cure was assessed in accordance with the International Organization...... for Standardization 4049 standard, and the polymerization contraction was determined using the bonded-disc method. The gap formation was measured at the dentin margin of Class II cavities. Five bulk-fill resin composites were investigated: two high-viscosity (Tetric EvoCeram Bulk Fill, SonicFill) and three low......-viscosity (x-tra base, Venus Bulk Fill, SDR) materials. Compared with the conventional resin composite, the high-viscosity bulk-fill materials exhibited only a small increase (but significant for Tetric EvoCeram Bulk Fill) in depth of cure and polymerization contraction, whereas the low-viscosity bulk...

  7. Explosive bulk charge

    Energy Technology Data Exchange (ETDEWEB)

    Miller, Jacob Lee

    2015-04-21

    An explosive bulk charge, including: a first contact surface configured to be selectively disposed substantially adjacent to a structure or material; a second end surface configured to selectively receive a detonator; and a curvilinear side surface joining the first contact surface and the second end surface. The first contact surface, the second end surface, and the curvilinear side surface form a bi-truncated hemispherical structure. The first contact surface, the second end surface, and the curvilinear side surface are formed from an explosive material. Optionally, the first contact surface and the second end surface each have a substantially circular shape. Optionally, the first contact surface and the second end surface consist of planar structures that are aligned substantially parallel or slightly tilted with respect to one another. The curvilinear side surface has one of a smooth curved geometry, an elliptical geometry, and a parabolic geometry.

  8. The Incredible Bulk

    CERN Document Server

    Fukushima, Keita; Kumar, Jason; Sandick, Pearl; Yamamoto, Takahiro

    2014-01-01

    Recent experimental results from the LHC have placed strong constraints on the masses of colored superpartners. The MSSM parameter space is also constrained by the measurement of the Higgs boson mass, and the requirement that the relic density of lightest neutralinos be consistent with observations. Although large regions of the MSSM parameter space can be excluded by these combined bounds, leptophilic versions of the MSSM can survive these constraints. In this paper we consider a scenario in which the requirements of minimal flavor violation, vanishing $CP$-violation, and mass universality are relaxed, specifically focusing on scenarios with light sleptons. We find a large region of parameter space, analogous to the original bulk region, for which the lightest neutralino is a thermal relic with an abundance consistent with that of dark matter. We find that these leptophilic models are constrained by measurements of the magnetic and electric dipole moments of the electron and muon, and that these models have ...

  9. Creating bulk nanocrystalline metal.

    Energy Technology Data Exchange (ETDEWEB)

    Fredenburg, D. Anthony (Georgia Institute of Technology, Atlanta, GA); Saldana, Christopher J. (Purdue University, West Lafayette, IN); Gill, David D.; Hall, Aaron Christopher; Roemer, Timothy John (Ktech Corporation, Albuquerque, NM); Vogler, Tracy John; Yang, Pin

    2008-10-01

    Nanocrystalline and nanostructured materials offer unique microstructure-dependent properties that are superior to coarse-grained materials. These materials have been shown to have very high hardness, strength, and wear resistance. However, most current methods of producing nanostructured materials in weapons-relevant materials create powdered metal that must be consolidated into bulk form to be useful. Conventional consolidation methods are not appropriate due to the need to maintain the nanocrystalline structure. This research investigated new ways of creating nanocrystalline material, new methods of consolidating nanocrystalline material, and an analysis of these different methods of creation and consolidation to evaluate their applicability to mesoscale weapons applications where part features are often under 100 {micro}m wide and the material's microstructure must be very small to give homogeneous properties across the feature.

  10. TP53INP1, a tumor suppressor, interacts with LC3 and ATG8-family proteins through the LC3-interacting region (LIR) and promotes autophagy-dependent cell death.

    Science.gov (United States)

    Seillier, M; Peuget, S; Gayet, O; Gauthier, C; N'Guessan, P; Monte, M; Carrier, A; Iovanna, J L; Dusetti, N J

    2012-09-01

    TP53INP1 (tumor protein 53-induced nuclear protein 1) is a tumor suppressor, whose expression is downregulated in cancers from different organs. It was described as a p53 target gene involved in cell death, cell-cycle arrest and cellular migration. In this work, we show that TP53INP1 is also able to interact with ATG8-family proteins and to induce autophagy-dependent cell death. In agreement with this finding, we observe that TP53INP1, which is mainly nuclear, relocalizes in autophagosomes during autophagy where it is eventually degraded. TP53INP1-LC3 interaction occurs via a functional LC3-interacting region (LIR). Inactivating mutations of this sequence abolish TP53INP1-LC3 interaction, relocalize TP53INP1 in autophagosomes and decrease TP53INP1 ability to trigger cell death. Interestingly, TP53INP1 binds to ATG8-family proteins with higher affinity than p62, suggesting that it could partially displace p62 from autophagosomes, modifying thereby their composition. Moreover, silencing the expression of autophagy related genes (ATG5 or Beclin-1) or inhibiting caspase activity significantly decreases cell death induced by TP53INP1. These data indicate that cell death observed after TP53INP1-LC3 interaction depends on both autophagy and caspase activity. We conclude that TP53INP1 could act as a tumor suppressor by inducing cell death by caspase-dependent autophagy.

  11. Superhard MgB sub 2 bulk material prepared by high-pressure sintering

    CERN Document Server

    Ma, H A; Chen, L X; Zhu, P W; Ren, G Z; Guo, W L; Fu, X Q; Zou Guang Tian; Ren, Z A; Che, G C; Zhao, Z X

    2002-01-01

    Superhard MgB sub 2 bulk material with a golden metallic shine was synthesized by high-pressure sintering for 8 h at 5.5 GPa and different temperatures. Appropriate pressure and temperature conditions for synthesizing polycrystalline MgB sub 2 with high hardness were investigated. The samples were characterized by means of atomic force microscopy and x-ray diffraction. The Vickers hardness, bulk density, and electrical resistivity were measured at room temperature.

  12. Submicron InP DHBT technology for high-speed high-swing mixed-signal ICs

    DEFF Research Database (Denmark)

    Godin, Jean; Nodjiadjim, V.; Riet, Muriel;

    2008-01-01

    We report on the development of a submicron InP DHBT technology, optimized for the fabrication of 50-GHz-clock mixed signal ICs. In-depth study of device geometry and structure has allowed to get the needed performances and yield. Special attention has been paid to critical thermal behavior. Vari...

  13. Design of InP DHBT power amplifiers at millimeter-wave frequencies using interstage matched cascode technique

    DEFF Research Database (Denmark)

    Yan, Lei; Johansen, Tom Keinicke

    2013-01-01

    In this paper, the design of InP DHBT based millimeter-wave(mm-wave) power amplifiers(PAs) using an interstage matched cascode technique is presented. The output power of a traditional cascode is limited by the early saturation of the common-base(CB) device. The interstage matched cascode can be ...

  14. Improvement of GaAsSb alloys on InP grown by molecular beam epitaxy with substrate tilting

    Science.gov (United States)

    Chou, C. Y.; Torfi, A.; Wang, W. I.

    2013-10-01

    GaAsSb alloys lattice-matched to InP substrate have been used in various electronic and optoelectronic applications due to their highly desirable band alignment for high-speed double heterojunction bipolar transistors. There is however an issue with GaAsSb alloys, composed approximately of 50% As and 50% Sb, lattice-matched to an InP substrate; it exhibits a miscibility gap, which is a significant problem for crystal growth. This paper addresses the effect of substrate tilting on the material properties of GaAsSb alloys closely lattice-matched to InP substrates by molecular beam epitaxy (MBE). InP(100) substrates tilted 0°off-(on-axis), 2°off-, 3°off-, and 4°off-axis were used for MBE growth, then the material qualities of GaAsSb epitaxial layers were compared using various techniques, including high resolution X-ray diffraction, photoluminescence (PL), Raman scattering, and transmission-line measurements (TLM). Substrate tilting improved the GaAsSb alloys with crystalline quality, shown by a narrower x-ray linewidth and enhanced optical quality as evidenced by a strong PL peak. The results of TLM show that the lowest sheet resistance was achieved at a 2° off-axis tilt. The results are expected to be applicable in devices that incorporate GaAsSb in the active layer grown by MBE.

  15. A high conversion-gain Q-band InP DHBT subharmonic mixer using LO frequency doubler

    DEFF Research Database (Denmark)

    Johansen, Tom Keinicke; Vidkjær, Jens; Krozer, Viktor;

    2008-01-01

    The paper presents analysis and design of a Q-band subharmonic mixer (SHM) with high conversion gain. The SHM consists of a local oscillator (LO) frequency doubler, RF pre-amplifier, and single-ended mixer. The SHM has been fabricated in a high-speed InP double heterojunction bipolar transistor...

  16. Modeling, design, fabrication, and testing of InP Gunn devices in the D-band (110 GHz - 170 GHz)

    Science.gov (United States)

    Kamoua, R.; Eisele, H.; East, J. R.; Haddad, G. I.; Munns, G.; Sherwin, M.

    1992-01-01

    The development of fundamental Gunn sources for D-band frequencies requires improvements of doping profiles, processing technology, and circuit design. We have developed a technology for fabricating InP Gunn diodes using an InGaAs etch-stop layer between the InP substrate and the device layers. The epitaxial layers were grown by CBE. During device processing, the substrate is completely removed. Substrateless devices with an n(+) InGaAs cap layer are expected to have reduced contact and series resistances, and skin effect losses. This technology gives better uniformity and control of the device geometry across the processed chip. InP Gunn devices with a 1.7 micron long active region (doping : 9 x 10(exp 15) cm(exp -3)) have been mounted on copper heat sinks. Two tapered leads were then bonded to the diode and to four quartz standoffs. As a preliminary result, an output power of 13 mW at 82 GHz was obtained. Based on these RF measurements, we determine appropriate material parameters to be used in the Ensemble Monte Carlo model. Subsequently, we use this model to design and evaluate the performance of InP Gunn Devices for D-band frequencies. Using the same technology, we are currently processing Gunn devices with a 1 micron long active region for operation at higher frequencies.

  17. 1.12 Tb/s superchannel coherent PM-QPSK InP transmitter photonic integrated circuit (PIC).

    Science.gov (United States)

    Evans, P; Fisher, M; Malendevich, R; James, A; Goldfarb, G; Vallaitis, T; Kato, M; Samra, P; Corzine, S; Strzelecka, E; Studenkov, P; Salvatore, R; Sedgwick, F; Kuntz, M; Lal, V; Lambert, D; Dentai, A; Pavinski, D; Zhang, J; Cornelius, J; Tsai, T; Behnia, B; Bostak, J; Dominic, V; Nilsson, A; Taylor, B; Rahn, J; Sanders, S; Sun, H; Wu, K-T; Pleumeekers, J; Muthiah, R; Missey, M; Schneider, R; Stewart, J; Reffle, M; Butrie, T; Nagarajan, R; Ziari, M; Kish, F; Welch, D

    2011-12-12

    In this work, a 10-wavelength, polarization-multiplexed, monolithically integrated InP coherent QPSK transmitter PIC is demonstrated to operate at 112 Gb/sec per wavelength and total chip superchannel bandwidth of 1.12 Tb/s. This demonstration suggests that increasing data capacity to multi-Tb/s per chip is possible and likely in the future.

  18. Electrical and structural characterization of GaAs on InP grown by OMCVD; application to GaAs MESFETs

    Science.gov (United States)

    Azoulay, R.; Clei, A.; Dugrand, L.; Draïdia, auN.; Leroux, G.; Biblemont, S.

    1991-01-01

    The growth of GaAs on InP has attracted considerable interest recently because of the possibility of integration of GaAs electronic devices and 1.3 μm optical devices on the same wafer. In this work, we have investigated the growth of GaAs MESFETs and doped channel MIS-like FETs on InP by atmospheric pressure OMCVD. Because of the difference between the thermal expansion coefficient of GaAs and InP, the layers are under biaxial strain. The lowest FWHM of the (004) reflection curve of the double crystal X-ray diffraction spectra is 110 arc sec for a 12 μm thick layer. We have investigated the influence of the substrate temperature and of the arsine molar fraction on the residual carrier concentration of layers grown side by side on GaAs and on InP. The GaAs layers grown on InP are much more compensated than the layers grown on GaAs, indicating a higher incorporation of impurities. On MESFETs grown on InP, gm = 200mS/mm with Fmax higher than 30 GHz. On doped-channel MIS-like FETs on InP, we have measured gm = 145mS/mm.

  19. Hydrogen passivation of n+p and p+n heteroepitaxial InP solar cell structures

    Science.gov (United States)

    Chatterjee, B.; Ringel, S. A.; Hoffman, R., Jr.

    1995-01-01

    High-efficiency, heteroepitaxial (HE) InP solar cells, grown on GaAs, Si or Ge substrates, are desirable for their mechanically strong, light-weight and radiation-hard properties. However, dislocations, caused by lattice mismatch, currently limit the performance of the HE cells. This occurs through shunting paths across the active photovoltaic junction and by the formation of deep levels. In previous work we have demonstrated that plasma hydrogenation is an effective and stable means to passivate the electrical activity of dislocations in specially designed HE InP test structures. In this work, we present the first report of successful hydrogen passivation in actual InP cell structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). We have found that a 2 hour exposure to a 13.56 MHz hydrogen plasma at 275 C reduces the deep level concentration in HE n+n InP cell structures from as-grown values of approximately 10(exp 15)/cm(exp -3), down to 1-2 x 10(exp 13)/cm(exp -3). The deep levels in the p-type base region of the cell structure match those of our earlier p-type test structures, which were attributed to dislocations or related point defect complexes. All dopants were successfully reactivated by a 400 C, 5 minute anneal with no detectable activation of deep levels. I-V analysis indicated a subsequent approximately 10 fold decrease in reverse leakage current at -1 volt reverse bias, and no change in the forward biased series resistance of the cell structure which indicates complete reactivation of the n+ emitter. Furthermore, electrochemical C-V profiling indicates greatly enhanced passivation depth, and hence hydrogen diffusion, for heteroepitaxial structures when compared with identically processed homoepitaxial n+p InP structures. An analysis of hydrogen diffusion in dislocated InP will be discussed, along with comparisons of passivation effectiveness for n+p versus p+n heteroepitaxial cell configurations. Preliminary hydrogen

  20. Doclet To Synthesize UML

    Science.gov (United States)

    Barry, Matthew R.; Osborne, Richard N.

    2005-01-01

    The RoseDoclet computer program extends the capability of Java doclet software to automatically synthesize Unified Modeling Language (UML) content from Java language source code. [Doclets are Java-language programs that use the doclet application programming interface (API) to specify the content and format of the output of Javadoc. Javadoc is a program, originally designed to generate API documentation from Java source code, now also useful as an extensible engine for processing Java source code.] RoseDoclet takes advantage of Javadoc comments and tags already in the source code to produce a UML model of that code. RoseDoclet applies the doclet API to create a doclet passed to Javadoc. The Javadoc engine applies the doclet to the source code, emitting the output format specified by the doclet. RoseDoclet emits a Rose model file and populates it with fully documented packages, classes, methods, variables, and class diagrams identified in the source code. The way in which UML models are generated can be controlled by use of new Javadoc comment tags that RoseDoclet provides. The advantage of using RoseDoclet is that Javadoc documentation becomes leveraged for two purposes: documenting the as-built API and keeping the design documentation up to date.

  1. Formulation of the microbicide INP0341 for in vivo protection against a vaginal challenge by Chlamydia trachomatis.

    Directory of Open Access Journals (Sweden)

    Christian Pedersen

    Full Text Available The salicylidene acylhydrazide (SA compounds have exhibited promising microbicidal properties. Previous reports have shown the SA compounds, using cell cultures, to exhibit activity against Chlamydia trachomatis, herpes simplex virus and HIV-1. In addition, using an animal model of a vaginal infection the SA compound INP0341, when dissolved in a liquid, was able to significantly protect mice from a vaginal infection with C. trachomatis. To expand upon this finding, in this report INP0341 was formulated as a vaginal gel, suitable for use in humans. Gelling agents (polymers with inherent antimicrobial properties were chosen to maximize the total antimicrobial effect of the gel. In vitro formulation work generated a gel with suitable rheology and sustained drug release. A formulation containing 1 mM INP0341, 1.6 wt% Cremophor ELP (solubility enhancer and 1.5 wt% poly(acrylic acid (gelling and antimicrobial agent, was chosen for studies of efficacy and toxicity using a mouse model of a vaginal infection. The gel formulation was able to attenuate a vaginal challenge with C. trachomatis, serovar D. Formulations with and without INP0341 afforded protection, but the inclusion of INP0341 increased the protection. Mouse vaginal tissue treated with the formulation showed no indication of gel toxicity. The lack of toxicity was confirmed by in vitro assays using EpiVaginal tissues, which showed that a 24 h exposure to the gel formulation did not decrease the cell viability or the barrier function of the tissue. Therefore, the gel formulation described here appears to be a promising vaginal microbicide to prevent a C. trachomatis infection with the potential to be expanded to other sexually transmitted diseases.

  2. InP MMIC Chip Set for Power Sources Covering 80-170 GHz

    Science.gov (United States)

    Ngo, Catherine

    2001-01-01

    We will present a Monolithic Millimeter-wave Integrated Circuit (MMIC) chip set which provides high output-power sources for driving diode frequency multipliers into the terahertz range. The chip set was fabricated at HRL Laboratories using a 0.1-micrometer gate-length InAlAs/InGaAs/InP high electron mobility transistor (HEMT) process, and features transistors with an f(sub max) above 600 GHz. The HRL InP HEMT process has already demonstrated amplifiers in the 60-200 GHz range. In this paper, these high frequency HEMTs form the basis for power sources up to 170 GHz. A number of state-of-the-art InP HEMT MMICs will be presented. These include voltage-controlled and fixed-tuned oscillators, power amplifiers, and an active doubler. We will first discuss an 80 GHz voltage-controlled oscillator with 5 GHz of tunability and at least 17 mW of output power, as well as a 120 GHz oscillator providing 7 mW of output power. In addition, we will present results of a power amplifier which covers the full WRIO waveguide band (75-110 GHz), and provides 40-50 mW of output power. Furthermore, we will present an active doubler at 164 GHz providing 8% bandwidth, 3 mW of output power, and an unprecedented 2 dB of conversion loss for an InP HEMT MMIC at this frequency. Finally, we will demonstrate a power amplifier to cover 140-170 GHz with 15-25 mW of output power and 8 dB gain. These components can form a power source in the 155-165 GHz range by cascading the 80 GHz oscillator, W-band power amplifier, 164 GHz active doubler and final 140-170 GHz power amplifier for a stable, compact local oscillator subsystem, which could be used for atmospheric science or astrophysics radiometers.

  3. Developing bulk exchange spring magnets

    Energy Technology Data Exchange (ETDEWEB)

    Mccall, Scott K.; Kuntz, Joshua D.

    2017-06-27

    A method of making a bulk exchange spring magnet by providing a magnetically soft material, providing a hard magnetic material, and producing a composite of said magnetically soft material and said hard magnetic material to make the bulk exchange spring magnet. The step of producing a composite of magnetically soft material and hard magnetic material is accomplished by electrophoretic deposition of the magnetically soft material and the hard magnetic material to make the bulk exchange spring magnet.

  4. Hole Rashba effect and g-factor in InP nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, X W [Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 (China); Xia, J B [Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 (China)

    2007-01-21

    The hole Rashba effect and g-factor in InP nanowires in the presence of electric and magnetic fields which bring spin splitting are investigated theoretically in the framework of eight-band effective-mass envelop function theory, by expanding the lateral wave function in Bessel functions. It is well known that the electron Rashba coefficient increases nearly linearly with the electric field. As the Rashba spin splitting is zero at zero k{sub z} (the wave vector along the wire direction), the electron g-factor at k{sub z} = 0 changes little with the electric field. While we find that as the electric field increases, the hole Rashba coefficient increases at first, then decreases. It is noticed that the hole Rashba coefficient is zero at a critical electric field. The hole g-factor at k{sub z} = 0 changes obviously with the electric field.

  5. Effect of native oxide mechanical deformation on InP nanoindentation

    Science.gov (United States)

    Almeida, C. M.; Prioli, R.; Ponce, F. A.

    2008-12-01

    Native oxide has been found to have a noticeable effect on the mechanical deformation of InP during nanoindentation. The indentations were performed using spherical diamond tips and the residual impressions were studied by atomic force microscopy. It has been observed that in the early stages of mechanical deformation, plastic flow occurs in the oxide layer while the indium phosphide is still in the elastic regime. The deformed native oxide layer results in a pile-up formation that causes an increase in the contact area between the tip and the surface during the nanoindentation process. This increase in the projected contact area is shown to contribute to the apparent high pressure sustained by the crystal before the onset of plastic deformation. It is also shown that the stress necessary to generate the first dislocations from the crystal surface is ˜3 GPa higher than the stress needed for slip to occur when dislocations are already present in the crystalline structure.

  6. Photovoltaic characteristics of n(+)pp(+) InP solar cells grown by OMVPE

    Science.gov (United States)

    Tyagi, S.; Singh, K.; Bhimnathwala, H.; Ghandhi, S. K.; Borrego, J. M.

    1990-01-01

    The photovoltaic characteristics of n(+)/p/p(+) homojunction InP solar cells fabricated by organometallic vapor-phase epitaxy (OMVPE) are described. The cells are characterized by I-V, C-V and quantum efficiency measurements, and simulations are used to obtain various device and material parameters. The I-V characteristics show a high recombination rate in the depletion region; this is shown to be independent of the impurity used. It is shown that cadmium is easier to use as an acceptor for the p base and p(+) buffer and is therefore beneficial. The high quantum efficiency of 98 percent at long wavelengths measured in these cells indicates a very good collection efficiency in the base. The short-wavelength quantum efficiency is poor, indicating a high surface recombination.

  7. Identification of vacancy type defects in low and high energy nitrogen ion implanted InP

    Energy Technology Data Exchange (ETDEWEB)

    Santhakumar, K [Department of Nuclear Physics, University of Madras, Chennai - 600025 (India); Rao, G Venugopal [Materials Science Division, Indira Gandhi Centre for Atomic Research, Kalpakkam - 603102 (India); Amarendra, G [Materials Science Division, Indira Gandhi Centre for Atomic Research, Kalpakkam - 603102 (India); Abhaya, S [Materials Science Division, Indira Gandhi Centre for Atomic Research, Kalpakkam - 603102 (India); Sastry, V Sankara [Materials Science Division, Indira Gandhi Centre for Atomic Research, Kalpakkam - 603102 (India); Nair, K G M [Materials Science Division, Indira Gandhi Centre for Atomic Research, Kalpakkam - 603102 (India); Ravichandran, V [Department of Nuclear Physics, University of Madras, Chennai - 600025 (India)

    2005-12-21

    Depth resolved positron annihilation measurements were carried out on 85 keV and 1 MeV nitrogen ion implanted InP samples. The defect sensitive S-parameter and R-parameter values for the low energy implantations confirm the presence of monovacancies up to a dose of 10{sup 15} cm{sup -2} and coexistence of monovacancies and divacancies for 10{sup 16} cm{sup -2} dose sample. Corroborative glancing incidence x-ray diffraction measurements on the highest dose sample revealed that the sample is amorphized. For high energy implantation, it is found that vacancy-defects are present right from the near-surface region and these defects are identified to be monovancancies, based on the observed S- and R-parameters. A comparison of the results for the low and high energy implantations is made.

  8. Fluorescence intermittency in self-assembled InP quantum dots.

    Science.gov (United States)

    Sugisaki, M; Ren, H W; Nishi, K; Masumoto, Y

    2001-05-21

    Fluorescence intermittency in InP self-assembled dots is investigated by means of far field imaging and single dot spectroscopy. Based on our observation that blinking dots are found in the vicinity of scratches and the blinking frequency is drastically enhanced under a near-infrared laser irradiation, we attribute the origin of the fluorescence intermittency to a local electric field due to a carrier trapped at a deep localized center in the Ga0.5In0.5P matrix. The validity of this explanation is confirmed by a thermal activation-type behavior of the switching rate and artificial reproduction of the blinking phenomenon by an external electric field.

  9. Exciton fine structure splitting in InP quantum dots in GaInP.

    Science.gov (United States)

    Ellström, C; Seifert, W; Pryor, C; Samuelson, L; Pistol, M-E

    2007-07-25

    We have investigated the electronic structure of excitons in InP quantum dots in GaInP. The exciton is theoretically expected to have four states. Two of the states are allowed to optically decay to the ground (vacuum) state in the dipole approximation. We see these two lines in photoluminescence (PL) experiments and find that the splitting between the lines (the fine structure splitting) is 150(± 30) µeV. The lines were perpendicularly polarized. We verified that the lines arise from neutral excitons by using correlation spectroscopy. The theoretical calculations show that the polarization of the emission lines are along and perpendicular to the major axis of elongated dots. The fine structure splitting depends on the degree of elongation of the dots and is close to zero for dots of cylindrical symmetry, despite the influence of the piezoelectric polarization, which is included in the calculation.

  10. Experimentally estimated dead space for GaAs and InP based planar Gunn diodes

    Science.gov (United States)

    Ismaeel Maricar, Mohamed; Khalid, A.; Dunn, G.; Cumming, D.; Oxley, C. H.

    2015-01-01

    An experimental method has been used to estimate the dead space of planar Gunn diodes which were fabricated using GaAs and InP based materials, respectively. The experimental results indicate that the dead space was approximately 0.23 μm and the saturation domain velocity 0.96 × 105 m s-1 for an Al0.23Ga0.77As based device, while for an In0.53Ga0.47As based device, the dead space was approximately 0.21 μm and the saturation domain velocity 1.93 × 105 m s-1. Further, the results suggest that the saturation domain velocity is reduced or there is an increase in the dead-space due to local field distortions when the active channel length of the planar Gunn diode is less than 1 micron.

  11. InP nanowire p-type doping via Zinc indiffusion

    Science.gov (United States)

    Haggren, Tuomas; Otnes, Gaute; Mourão, Renato; Dagyte, Vilgaile; Hultin, Olof; Lindelöw, Fredrik; Borgström, Magnus; Samuelson, Lars

    2016-10-01

    We report an alternative pathway for p-type InP nanowire (NW) doping by diffusion of Zn species from the gas phase. The diffusion of Zn was performed in a MOVPE reactor at 350-500 °C for 5-20 min with either H2 environment or additional phosphorus in the atmosphere. In addition, Zn3P2 shells were studied as protective caps during post-diffusion annealing. This post-diffusion annealing was performed to outdiffuse and activate Zn in interstitial locations. The characterization methods included photoluminescence and single NW conductivity and carrier concentration measurements. The acquired carrier concentrations were in the order of >1017 cm-3 for NWs without post-annealing, and up to 1018 cm-3 for NWs annealed with the Zn3P2 shells. The diffused Zn caused redshift to the photoluminescence signal, and the degree of redshift depended on the diffusion process.

  12. High Magnetic Field Superconducting Magnets Fabricated In Budker Inp For Sr Generation

    CERN Document Server

    Zolotarev, K V; Khruschev, S V; Krämer, Dietrich; Kulipanov, G N; Lev, V H; Mezentsev, N A; Miginsky, E G; Shkaruba, V A; Syrovatin, V M; Tsukanov, V M; Zjurba, V K

    2004-01-01

    BESSY operates a 3-rd generation synchrotron light source in VUV to XUV region at Berlin-Adlershof. The main radiation sources in storage ring are special magnetic elements as undulators and wigglers. 3 superconducting shifters and one multipole superconducting wiggler are operating giving enhanced photon flux for 10-25 keV X-ray region. As the superconducting elements presently are located in straight sections, BESSY intends to exchange 4 of conventional room-temperature bending magnets by superconducting ones.The report contains brief description of 9 Tesla superbend prototype as a candidate for replacing of conventional magnets of BESSY-2, which was designed, fabricated and tested at Budker INP and was commissioned at BESSY in June 2004.Main parameters of 9 Tesla superconducting bending magnet prototype as well as testing results are presented.

  13. Si Incorporation in InP Nanowires Grown by Au-Assisted Molecular Beam Epitaxy

    Directory of Open Access Journals (Sweden)

    Lorenzo Rigutti

    2009-01-01

    Full Text Available We report on the growth, structural characterization, and conductivity studies of Si-doped InP nanowires grown by Au-assisted molecular beam epitaxy. It is shown that Si doping reduces the mean diffusion length of adatoms on the lateral nanowire surface and consequently reduces the nanowire growth rate and promotes lateral growth. A resistivity as low as 5.1±0.3×10−5 Ω⋅cm is measured for highly doped nanowires. Two dopant incorporation mechanisms are discussed: incorporation via catalyst particle and direct incorporation on the nanowire sidewalls. The first mechanism is shown to be less efficient than the second one, resulting in inhomogeneous radial dopant distribution.

  14. Photonics integrations enabling high-end applications of InP in optical data transmissions

    Science.gov (United States)

    Zhang, Jiaming; Frateschi, Newton; Jambunathan, Ram; Choi, Wonjin; Bond, Aaron E.

    2005-10-01

    We present here results from a uniquely designed InP modulator chip combined with advanced packaging concepts, which enables high-end applications in optical data communications. An electroabsorption (EA) modulator, with a strained InGaAsP or InGaAlAs multiple quantum well structure, is monolithically integrated with a semiconductor optical amplifier. This design offers broad wavelength tunability while maintaining high extinction ratio, high optical output power, and high dispersion tolerance. The amplified EA modulator chip is co-packaged with a distributed feed back (DFB) laser ensuring separate optimization of the laser and modulator sections. The optical isolator, placed between the laser and modulator, completely eliminates adiabatic chirp. This Telcordia-qualified laser integrated modulator platform enables superior performance previously not thought possible for InP absorption based modulators. 11dB of dynamic extinction ratio, 5dBm of modulated output power, and +/-1200ps/nm or +1600ps/nm dispersion tolerance can be simultaneously achieved in un-amplified 10Gb/s data transmission. Full C-band tunability using a single device is also demonstrated with the LIM module. Extensive simulations and transmission system evaluations shows that with the controllable chirp, the cost-effective LIM performs as well as a Mach-Zehnder modulator in dispersion managed and amplified long-haul WDM systems. Lastly, the first uncooled 10Gb/s long-reach operation at 1550nm was demonstrated with LIM packages. Using a simple control algorithm, a constant modulated output power of 1dBm with less than 1dB dispersion penalty over 1600ps/nm single mode fiber is achieved in an 80 degrees environmental temperature range without any module temperature control. Utilizing the Al-based material system, also allows a reduced variation of the extinction ratio.

  15. 国外InP HEMT和InP HBT的发展现状及应用%Development and Application of InP HEMT and InP HBT

    Institute of Scientific and Technical Information of China (English)

    姚立华

    2009-01-01

    InP device is the first selection in millimeter wave bands because for its high frequency, high power, low noise figure and radiation hardened. InP HEMT and InP HBT behave excellent performance in military applications, such as satellite and radar. Current development, excellent performances and the main manufacturers of InP HEMT/InP HBT devices and circuits are presented. InP HEMT according to low noise and power is described. Their applications in military are introduced, for instance in T/R module of satellite phase array radar system, receivers in spacecraft and ground based station and communication systems. The development trends are summarized according to the development of InP device and circuits abroad.%在毫米波段,InP基器件由于其具有高频、高功率、低噪声及抗辐射等特点,成为人们的首选,尤其适用于空间应用.InP HEMT和InP HBT已在卫星、雷达等军事应用中表现出了优异的性能.分别介绍了InP HEMT和InP HBT器件及电路的发展现状,现在能达到的最高性能及主要生产公司等,其中InP HEMT又分别按低噪声和功率进行了详细介绍.介绍了它们在军事上的主要应用,以具体的应用实例介绍了在卫星相控阵雷达系统天线中的T/R模块中、航天器和地面站的接收机中、以及雷达和通信系统中的应用情况、达到的性能及可靠性等.并根据国外InP器件和电路的发展现状总结了其未来发展趋势.

  16. Brane Couplings from Bulk Loops

    OpenAIRE

    Georgi, Howard; Grant, Aaron K.; Hailu, Girma

    2000-01-01

    We compute loop corrections to the effective action of a field theory on a five-dimensional $S_1/Z_2$ orbifold. We find that the quantum loop effects of interactions in the bulk produce infinite contributions that require renormalization by four-dimensional couplings on the orbifold fixed planes. Thus bulk couplings give rise to renormalization group running of brane couplings.

  17. Can bulk viscosity drive inflation

    Energy Technology Data Exchange (ETDEWEB)

    Pacher, T.; Stein-Schabes, J.A.; Turner, M.S.

    1987-09-15

    Contrary to other claims, we argue that bulk viscosity associated with the interactions of non- relativistic particles with relativistic particles around the time of the grand unified theory (GUT) phase transition cannot lead to inflation. Simply put, the key ingredient for inflation, negative pressure, cannot arise due to the bulk-viscosity effects of a weakly interacting mixture of relativistic and nonrelativistic particles.

  18. Bulk heterojunction solar cells of three polythienothiophenes

    Directory of Open Access Journals (Sweden)

    Elif Alturk Parlak

    2015-06-01

    Full Text Available Semiconducting conjugated copolymers poly(3-phenyl-2-(thiophen-2-ylthieno[3,2-b]thiophene (PTTPh, poly(3-(4-methoxyphenyl-2-(thiophen-2-ylthieno[3,2-b]thiophene (PTTPh-OMe and poly(3-(4-N,N-dimethylaminophenyl-2-(thiophen-2-ylthieno[3,2-b]thiophene (PTTPh-N(CH 3 2, which were synthesized previously through Suzuki coupling method, were fabricated for solar cell applications. The devices had a structure of glass/ITO/PEDOT:PSS/polymer:PC61BM/Al. Bulk heterojunction photovoltaic cells were prepared as blends of PTTPh, PTTPh-OMe, PTTPh-N(CH 3 2 and PC61BM in a 1:1 ratio, which delivered power conversion efficiencies of 0.43%, 0.039% and 0.027%, respectively, without addition of additives or device optimization.

  19. Preparation and Cytotoxicity of Novel Aliphatic Polycarbonate Synthesized from Dihydroxyacetone

    Institute of Scientific and Technical Information of China (English)

    Lian Sheng WANG; Xue Song JIANG; Hao WANG; Si Xue CHENG; Ren Xi ZHUO

    2005-01-01

    A new cyclic carbonate, 2,2-ethylenedioxypropane-1,3-diol carbonate (EOPDC), was synthesized through a two-step reaction from dihydroxyacetone dimer, and polymerized in bulk initiated by Sn(Oct)2 to give a high molecular weight polycarbonate. The structure of monomer and the polymer were characterized by FT-IR, 1H NMR, 13C NMR. The cytotoxicity of the obtained polycarbonate was investigated by MTT assay.

  20. Current impulse response of thin InP p+-i-n+ diodes using full band structure Monte Carlo method

    Science.gov (United States)

    You, A. H.; Cheang, P. L.

    2007-02-01

    A random response time model to compute the statistics of the avalanche buildup time of double-carrier multiplication in avalanche photodiodes (APDs) using full band structure Monte Carlo (FBMC) method is discussed. The effect of feedback impact ionization process and the dead-space effect on random response time are included in order to simulate the speed of APD. The time response of InP p+-i-n+ diodes with the multiplication region of 0.2μm is presented. Finally, the FBMC model is used to calculate the current impulse response of the thin InP p+-i-n+ diodes with multiplication lengths of 0.05 and 0.2μm using Ramo's theorem [Proc. IRE 27, 584 (1939)]. The simulated current impulse response of the FBMC model is compared to the results simulated from a simple Monte Carlo model.

  1. Band offset in GaAlAs and InGaAs: InP heterojunctions by electrochemical CV profiling

    Science.gov (United States)

    Furtado, M. T.; Loural, M. S. S.; Sachs, A. C.; Shieh, P. J.

    We report electrochemical CV measurement determination of the conduction band offset ΔEc of Ga 1-xAl xAs:Ga 1-yAl yAs heterojunctions (HJs) with x=0-0.21 and y≈0.4, as well as of In 0.53Ga 0.47As: InP HJs. The samples were grown by liquid phase epitaxy. We have obtained band offset ratios ΔEc/ΔEg≈0.6 and ΔEc/ΔEg≈0.36, respectively, for GaAlAs and InGaAs: InP HJs, where ΔEg is the HJ band gap energy difference. These results are consistent with recent data obtained by other techniques on similar HJs. In addition, the density of fixed interface charges are estimated and are apparently related to the doping of the large band gap layer of the HJ.

  2. Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

    Institute of Scientific and Technical Information of China (English)

    HUANG Lei; SUN Bo; YAO Jian-quan; WANG Peng

    2008-01-01

    The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied.In collinear phase-matching,the optimum phase-matching wave bands of these two crystals are calculated.The optimum phase-matching wave bands in GaAs and InP are 0.95~1.38 μm and 0.7~0.96 μm respectively.The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed.The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed.It can serve for the following experiments as a theoretical evidence and a reference aswell.

  3. Luminescent InP Quantum Dots with Tunable Emission by Post-Synthetic Modification with Lewis Acids.

    Science.gov (United States)

    Stein, Jennifer L; Mader, Elizabeth A; Cossairt, Brandi M

    2016-04-07

    We demonstrate the ability of M(2+) Lewis acids (M = Cd, Zn) to dramatically enhance the photoluminescence quantum yield (PL QY) of InP quantum dots. The addition of cadmium and zinc is additionally found to red- and blue-shift, respectively, the lowest energy absorption and emission of InP quantum dots while maintaining particle size. This treatment results in a facile strategy to post-synthetically tune the luminescence color in these materials. Optical and structural characterization (XRD, TEM, XAS, ICP) have led us to identify the primary mechanism of PL turn-on as surface passivation of phosphorus dangling bonds, affording PL QYs up to 49% without the growth of a type I shell or the addition of HF. This route to PL enhancement and color tuning may prove useful as a standalone treatment or as a complement to shelling strategies.

  4. Characteristics of highly stacked InAs quantum-dot laser grown on vicinal (001)InP substrate

    Science.gov (United States)

    Akahane, Kouichi; Umezawa, Toshimasa; Matsumoto, Atsushi; Yamamoto, Naokatsu; Kawanishi, Tetsuya

    2016-04-01

    We fabricate broad-area laser diodes consisting of 30-layer stacks of InAs quantum dots by using a strain-compensation technique on a vicinal (001)InP substrate. These laser diodes exhibit ground-state lasing at 1576 nm in the pulsed mode with a high characteristic temperature of 111 K at around room temperature (20-80 °C).

  5. Improved dot size uniformity and luminescense of InAs quantum dots on InP substrate

    Science.gov (United States)

    Qiu, Y.; Uhl, D.

    2002-01-01

    InAs self-organized quantum dots have been grown in InGaAs quantum well on InP substrates by metalorganic vapor phase epitaxy. Atomic Force Microscopy confirmed of quantum dot formation with dot density of 3X10(sup 10) cm(sup -2). Improved dot size uniformity and strong room temperature photoluminescence up to 2 micron were observed after modifying the InGaAs well.

  6. High electron mobility of modulation doped GaAs after growing InP by solid source molecular beam epitaxy

    Institute of Scientific and Technical Information of China (English)

    SHU Yong-chun; PI Biao; LIN Yao-wang; XING Xiao-dong; YAO Jiang-hong; WANG Zhan-guo; XU Jing-jun

    2005-01-01

    Modulation-doped AlGaAs/GaAs structures were grown on GaAs(100) substrate by solid source molecular beam epitaxy (SSMBE) system. The factors which influence the electron mobility were investigated. After growing InP based materials, growth conditions were deteriorated, but by an appropriate method and using reasonaand growth conditions have been studied and optimized via Hall measurements. For a typical sample, 2.0 K electron served.

  7. Photoluminescence properties of ZnO films grown on InP by thermally oxidizing metallic Zn films

    CERN Document Server

    Chen, S J; Zhang, J Y; Lu, Y M; Shen, D Z; Fan, X W

    2003-01-01

    Photoluminescence (PL) properties of ZnO films grown on (001) InP substrates by thermal oxidization of metallic Zn films, in which oxygen vacancies and interstitial Zn ions are compensated by P ions diffusing from (001) InP substrates, are investigated. X-ray diffraction spectra indicate that P ions have diffused into the Zn films and chemically combined with Zn ions to form Zn sub 3 P sub 2. Intense free exciton emission dominates the PL spectra of ZnO films with very weak deep-level emission. Low-temperature PL spectra at 79 K are dominated by neutral-donor bound exciton emission at 3.299 eV (I sub 4) with a linewidth of 17.3 meV and neutral-acceptor bound exciton emission at 3.264 eV. The free exciton emission increases with increasing temperature and eventually dominates the emission spectrum for temperature higher than 170 K. Furthermore, the visible emission around 2.3 eV correlated with oxygen deficiencies and interstitial Zn defects was quenched to a remarkable degree by P diffusing from InP substrate...

  8. Surface Dipole Formation and Lowering of the Work Function by Cs Adsorption on InP(100) Surface

    Energy Technology Data Exchange (ETDEWEB)

    Sun, Y.; Liu, Z.; Pianetta, P.

    2007-06-08

    The Cs adsorption on InP(100) surface is studied with Synchrotron Radiation Photoelectron Spectroscopy. The charge transfer from Cs to the InP substrate is observed from the Cs induced In4d and P2p components, and this charge transfer results in surface dipole formation and lowering of the work function. The Cs4d intensity saturates at coverage of one monolayer (ML). However, a break point is observed at 0.5 ML, which coincides with the achievement of the minimum work function. This break point is due to the different vertical placement of the first and the second half monolayer of Cs atoms. Based on this information, a simple bi-layer structure for the Cs layer is presented. This bi-layer structure is consistent with the behavior of the charge transfer from the Cs to the InP substrate at different Cs coverages. This, in turn, explains why the work function decreases to a minimum at 0.5 ML of Cs and remains almost constant beyond this coverage. The depolarization of the surface dipoles is attributed to the saturation of charge transfer to the surface In atoms and the polarization of the Cs atoms in the second half monolayer induced by the positively charged Cs atoms in the first half monolayer.

  9. Surface Dipole Formation and Lowering of the Work Function by Cs Adsorption on InP(100) Surface

    Energy Technology Data Exchange (ETDEWEB)

    Sun, Y.; Liu, Z.; Pianetta, P.

    2007-06-08

    The Cs adsorption on InP(100) surface is studied with Synchrotron Radiation Photoelectron Spectroscopy. The charge transfer from Cs to the InP substrate is observed from the Cs induced In4d and P2p components, and this charge transfer results in surface dipole formation and lowering of the work function. The Cs4d intensity saturates at coverage of one monolayer (ML). However, a break point is observed at 0.5 ML, which coincides with the achievement of the minimum work function. This break point is due to the different vertical placement of the first and the second half monolayer of Cs atoms. Based on this information, a simple bi-layer structure for the Cs layer is presented. This bi-layer structure is consistent with the behavior of the charge transfer from the Cs to the InP substrate at different Cs coverages. This, in turn, explains why the work function decreases to a minimum at 0.5 ML of Cs and remains almost constant beyond this coverage. The depolarization of the surface dipoles is attributed to the saturation of charge transfer to the surface In atoms and the polarization of the Cs atoms in the second half monolayer induced by the positively charged Cs atoms in the first half monolayer.

  10. Effect of InP Doping on the Phase Transition of Thin GeSbTe Films

    Science.gov (United States)

    Bang, Ki Su; Oh, Yong Jun; Lee, Seung-Yun

    2015-08-01

    We report the crystallization and phase-transition behavior of GeSbTe thin films doped with indium phosphorus (InP). Pure GeSbTe thin films and InP-doped GeSbTe thin films were prepared by use of an rf magnetron sputtering method. After thermal annealing, electrical and optical changes in the thin films were observed. Sheet resistance and reflectance measurements revealed that InP doping suppresses crystallization of GeSbTe. X-ray diffraction analysis confirmed that addition of In and P atoms inhibits the phase transition from face-centered cubic to hexagonal closed-packed. Nucleation of the doped GeSbTe thin films was delayed at an annealing temperature of 100°C; after thermal annealing, neither segregation nor formation of a secondary phase occurred. These results indicate that InP doping improves the amorphous stability of GeSbTe thin films. It is believed this enhanced amorphous stability is a result of the formation of multiple, strong crosslinks by the In and P atoms.

  11. Can bulk viscosity drive inflation

    Energy Technology Data Exchange (ETDEWEB)

    Pacher, T.; Stein-Schabes, J.A.; Turner, M.S.

    1987-04-01

    Contrary to other claims, we argue that, bulk viscosity associated with the interactions of nonrelativistic particles with relativistic particles around the time of the grand unified theory (GUT) phase transition cannot lead to inflation. Simply put, the key ingredient for inflation, negative pressure, cannot arise due to the bulk viscosity effects of a weakly-interacting mixture of relativistic and nonrelativistic particles. 13 refs., 1 fig.

  12. Aerosol measurements during COPE: composition, size, and sources of CCN and INPs at the interface between marine and terrestrial influences

    Science.gov (United States)

    Taylor, Jonathan W.; Choularton, Thomas W.; Blyth, Alan M.; Flynn, Michael J.; Williams, Paul I.; Young, Gillian; Bower, Keith N.; Crosier, Jonathan; Gallagher, Martin W.; Dorsey, James R.; Liu, Zixia; Rosenberg, Philip D.

    2016-09-01

    Heavy rainfall from convective clouds can lead to devastating flash flooding, and observations of aerosols and clouds are required to improve cloud parameterisations used in precipitation forecasts. We present measurements of boundary layer aerosol concentration, size, and composition from a series of research flights performed over the southwest peninsula of the UK during the COnvective Precipitation Experiment (COPE) of summer 2013. We place emphasis on periods of southwesterly winds, which locally are most conducive to convective cloud formation, when marine air from the Atlantic reached the peninsula. Accumulation-mode aerosol mass loadings were typically 2-3 µg m-3 (corrected to standard cubic metres at 1013.25 hPa and 273.15 K), the majority of which was sulfuric acid over the sea, or ammonium sulfate inland, as terrestrial ammonia sources neutralised the aerosol. The cloud condensation nuclei (CCN) concentrations in these conditions were ˜ 150-280 cm-3 at 0.1 % and 400-500 cm-3 at 0.9 % supersaturation (SST), which are in good agreement with previous Atlantic measurements, and the cloud drop concentrations at cloud base ranged from 100 to 500 cm-3. The concentration of CCN at 0.1 % SST was well correlated with non-sea-salt sulfate, meaning marine sulfate formation was likely the main source of CCN. Marine organic aerosol (OA) had a similar mass spectrum to previous measurements of sea spray OA and was poorly correlated with CCN. In one case study that was significantly different to the rest, polluted anthropogenic emissions from the southern and central UK advected to the peninsula, with significant enhancements of OA, ammonium nitrate and sulfate, and black carbon. The CCN concentrations here were around 6 times higher than in the clean cases, and the cloud drop number concentrations were 3-4 times higher. Sources of ice-nucleating particles (INPs) were assessed by comparing different parameterisations used to predict INP concentrations, using measured

  13. Low-temperature damage formation in ion implanted InP

    Energy Technology Data Exchange (ETDEWEB)

    Wendler, E., E-mail: elke.wendler@uni-jena.de [Friedrich-Schiller-Universität Jena, Institut für Festkörperphysik, Max-Wien-Platz 1, 07743 Jena (Germany); Stonert, A. [National Center of Nuclear Research, 05-400 Swierk/Otwock (Poland); Turos, A. [National Center of Nuclear Research, 05-400 Swierk/Otwock (Poland); Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warsaw (Poland); Wesch, W. [Friedrich-Schiller-Universität Jena, Institut für Festkörperphysik, Max-Wien-Platz 1, 07743 Jena (Germany)

    2013-07-15

    Damage formation in ion implanted InP is studied by quasi–in situ Rutherford backscattering spectrometry (RBS) in channelling configuration. Subsequent implantation steps are performed at 15 K each followed by immediate RBS analysis without changing the environment or the temperature of the sample. 30 keV He, 150 keV N and 350 keV Ca ions were applied. The depth distribution of damage is in good agreement with that calculated with the SRIM code. The evolution of damage at the maximum of the distribution as a function of the ion fluence is described assuming damage formation within single ion impacts and stimulated growth of damage when the collision cascades start to overlap with cross sections σ{sub d} and σ{sub g}, respectively. These cross sections are found to depend on the primary energies deposited in the displacement of lattice atoms and in electronic interactions calculated with the SRIM code. The obtained empirical formulas are capable to represent the experimental results for different III–V compounds implanted at 15 K with various ion species.

  14. Heteroepitaxial InP, and ultrathin, directly glassed, GaAs 3-5 solar cells

    Science.gov (United States)

    Hardingham, C. M.; Cross, T. A.

    1993-01-01

    The commercial application of Indium Phosphide solar cells in practical space missions is crucially dependent upon achieving a major cost reduction which could be offered by heteroepitaxy on cheaper, more rugged substrates. Furthermore, significant mass reduction, compatibility with mechanically stacked multijunction cells, and elimination of the current loss through glue discoloration, is possible in III-V solar cells by the development of ultrathin, directly glassed cells. The progress of a UK collaborative program to develop high efficiency, homojunction InP solar cells, grown by MOCVD on Si substrates, is described. Results of homoepitaxial cells (is greater than 17 percent 1 Sun AM0) are presented, together with progress in achieving low dislocation density heteroepitaxy. Also, progress in a UK program to develop ultrathin directly-glassed GaAs cells is described. Ultrathin (5 micron) GaAs cells, with 1 Sun AM0 efficiencies up to 19.1 percent, are presented, together with progress in achieving a direct (adhesive-less) bond between the cell and coverglass. Consequential development to, for example, cell grids, are also discussed.

  15. Tunable optical filters for in-plane integration on InP MEMS platform

    Science.gov (United States)

    Datta, M.; McGee, J.; Pruessner, M. W.; Amarnath, K.; Kanakaraju, S.; Ghodssi, R.

    2005-07-01

    We have demonstrated a planar waveguide-based tunable integrated optical filter in indium phosphide (InP) with on-chip micro-electro-mechanical (MEMS) actuation. An air-gap Fabry-Perot resonant microcavity is formed between two waveguides, whose facets have monolithically integrated high-reflectivity multilayer InP/air Distributed Bragg Reflector (DBR) mirrors. A suspended beam electrostatic microactuator attached to one of the DBR mirrors modulates the microcavity length, resulting in a tunable filter. The DBR mirrors provide a broad high-reflectivity spectrum, within which the transmission wavelength can be tuned. The in-plane configuration of the filter enables easy integration with other active and passive waveguide-based optoelectronic devices on a chip and simplifies fiber alignment. Experimental results from the first generation of tunable optical filters are presented. The microfabricated filter exhibited a resonant wavelength shift of 12nm (1513-1525nm) at a low operating voltage of 7V. A full-width-half-maximum (FWHM) of 33 nm was experimentally observed, and the quality factor was calculated to be 46. Several improvements of the MEMS actuator, waveguide, and optical cavity design for the future devices are discussed.

  16. Doping evaluation of InP nanowires for tandem junction solar cells

    Science.gov (United States)

    Lindelöw, F.; Heurlin, M.; Otnes, G.; Dagytė, V.; Lindgren, D.; Hultin, O.; Storm, K.; Samuelson, L.; Borgström, M.

    2016-02-01

    In order to push the development of nanowire-based solar cells further using optimized nanowire diameter and pitch, a doping evaluation of the nanowire geometry is necessary. We report on a doping evaluation of n-type InP nanowires with diameters optimized for light absorption, grown by the use of metal-organic vapor phase epitaxy in particle-assisted growth mode using tetraethyltin (TESn) as the dopant precursor. The charge carrier concentration was evaluated using four-probe resistivity measurements and spatially resolved Hall measurements. In order to reach the highest possible nanowire doping level, we set the TESn molar fraction at a high constant value throughout growth and varied the trimethylindium (TMIn) molar fraction for different runs. Analysis shows that the charge carrier concentration in nanowires grown with the highest TMIn molar fraction (not leading to kinking nanowires) results in a low carrier concentration of approximately 1016 cm-3. By decreasing the molar fraction of TMIn, effectively increasing the IV/III ratio, the carrier concentration increases up to a level of about 1019 cm-3, where it seems to saturate. Axial carrier concentration gradients along the nanowires are found, which can be correlated to a combination of changes in the nanowire growth rate, measured in situ by optical reflectometry, and polytypism of the nanowires observed in transmission electron microscopy.

  17. Micromanipulation of InP lasers with optoelectronic tweezers for integration on a photonic platform.

    Science.gov (United States)

    Juvert, Joan; Zhang, Shuailong; Eddie, Iain; Mitchell, Colin J; Reed, Graham T; Wilkinson, James S; Kelly, Anthony; Neale, Steven L

    2016-08-08

    The integration of light sources on a photonic platform is a key aspect of the fabrication of self-contained photonic circuits with a small footprint that does not have a definitive solution yet. Several approaches are being actively researched for this purpose. In this work we propose optoelectronic tweezers for the manipulation and integration of light sources on a photonic platform and report the positional and angular accuracy of the micromanipulation of standard Fabry-Pérot InP semiconductor laser die. These lasers are over three orders of magnitude bigger in volume than any previously assembled with optofluidic techniques and the fact that they are industry standard lasers makes them significantly more useful than previously assembled microdisk lasers. We measure the accuracy to be 2.5 ± 1.4 µm and 1.4 ± 0.4° and conclude that optoelectronic tweezers are a promising technique for the micromanipulation and integration of optoelectronic components in general and semiconductor lasers in particular.

  18. RAMESES publication standards: realist syntheses

    Directory of Open Access Journals (Sweden)

    Wong Geoff

    2013-01-01

    Full Text Available Abstract Background There is growing interest in realist synthesis as an alternative systematic review method. This approach offers the potential to expand the knowledge base in policy-relevant areas - for example, by explaining the success, failure or mixed fortunes of complex interventions. No previous publication standards exist for reporting realist syntheses. This standard was developed as part of the RAMESES (Realist And MEta-narrative Evidence Syntheses: Evolving Standards project. The project's aim is to produce preliminary publication standards for realist systematic reviews. Methods We (a collated and summarized existing literature on the principles of good practice in realist syntheses; (b considered the extent to which these principles had been followed by published syntheses, thereby identifying how rigor may be lost and how existing methods could be improved; (c used a three-round online Delphi method with an interdisciplinary panel of national and international experts in evidence synthesis, realist research, policy and/or publishing to produce and iteratively refine a draft set of methodological steps and publication standards; (d provided real-time support to ongoing realist syntheses and the open-access RAMESES online discussion list so as to capture problems and questions as they arose; and (e synthesized expert input, evidence syntheses and real-time problem analysis into a definitive set of standards. Results We identified 35 published realist syntheses, provided real-time support to 9 on-going syntheses and captured questions raised in the RAMESES discussion list. Through analysis and discussion within the project team, we summarized the published literature and common questions and challenges into briefing materials for the Delphi panel, comprising 37 members. Within three rounds this panel had reached consensus on 19 key publication standards, with an overall response rate of 91%. Conclusion This project used multiple

  19. Looking for a bulk point

    CERN Document Server

    Maldacena, Juan; Zhiboedov, Alexander

    2015-01-01

    We consider Lorentzian correlators of local operators. In perturbation theory, singularities occur when we can draw a position-space Landau diagram with null lines. In theories with gravity duals, we can also draw Landau diagrams in the bulk. We argue that certain singularities can arise only from bulk diagrams, not from boundary diagrams. As has been previously observed, these singularities are a clear diagnostic of bulk locality. We analyze some properties of these perturbative singularities and discuss their relation to the OPE and the dimensions of double-trace operators. In the exact nonperturbative theory, we expect no singularity at these locations. We prove this statement in 1+1 dimensions by CFT methods.

  20. Bulk nano-crystalline alloys

    OpenAIRE

    T.-S. Chin; Lin, C. Y.; Lee, M.C.; R.T. Huang; S. M. Huang

    2009-01-01

    Bulk metallic glasses (BMGs) Fe–B–Y–Nb–Cu, 2 mm in diameter, were successfully annealed to become bulk nano-crystalline alloys (BNCAs) with α-Fe crystallite 11–13 nm in size. A ‘crystallization-and-stop’ model was proposed to explain this behavior. Following this model, alloy-design criteria were elucidated and confirmed successful on another Fe-based BMG Fe–B–Si–Nb–Cu, 1 mm in diameter, with crystallite sizes 10–40 nm. It was concluded that BNCAs can be designed in general by the proposed cr...

  1. A positive feedback loop of p53/miR-19/TP53INP1 modulates pancreatic cancer cell proliferation and apoptosis.

    Science.gov (United States)

    Wang, Xiaofang; Wang, Lei; Mo, Qingjiang; Jia, Ankui; Dong, Yuqian; Wang, Guoqiang

    2016-01-01

    Pancreatic cancer is a common malignancy whose prognosis and treatment of pancreatic cancer is extremely poor, with only 20% of patients reaching two years of survival. Previous findings have shown that the tumor suppressor p53 is involved in the development of various types of cancer, including pancreatic cancer. Additionally, p53 is able to activate TP53INP1 transcription by regulating several phenotypes of cancer cells. Using gain and loss-of-function assays, the aim of the present study was to examine the relationships between miR-19a/b and cancer development as well as potential underlying mechanisms. The results showed that miR-19a/b identified a positive feedback regulation of p53/TP53INP1 axis. Additionally, p53 upregulated the TP53INP1 level in pancreatic cancer cells. However, overexpressed miR-19a/b partially restored the TP53 function in the pancreatic cancer cells while miR-19a/b downregulated TP53INP1 protein by directly targeting 3'UTR of its mRNA at the post-transcriptional level. In addition, the patient tissues identified that the miR-19a/b level in pancreatic cancer tissues was conversely correlated with TP53 and TP53INP1 expression. The results provide evidence for revealing the molecular mechanism involved in the development of pancreatic cancer and may be useful in the identification of new therapeutic targets for pancreatic cancer.

  2. Impact of P/In flux ratio and epilayer thickness on faceting for nanoscale selective area growth of InP by molecular beam epitaxy.

    Science.gov (United States)

    Fahed, M; Desplanque, L; Coinon, C; Troadec, D; Wallart, X

    2015-07-24

    The impact of the P/In flux ratio and the deposited thickness on the faceting of InP nanostructures selectively grown by molecular beam epitaxy (MBE) is reported. Homoepitaxial growth of InP is performed inside 200 nm wide stripe openings oriented either along a [110] or [1-10] azimuth in a 10 nm thick SiO2 film deposited on an InP(001) substrate. When varying the P/In flux ratio, no major shape differences are observed for [1-10]-oriented apertures. On the other hand, the InP nanostructure cross sections strongly evolve for [110]-oriented apertures for which (111)B facets are more prominent and (001) ones shrink for large P/In flux ratio values. These results show that the growth conditions allow tailoring the nanocrystal shape. They are discussed in the framework of the equilibrium crystal shape model using existing theoretical calculations of the surface energies of different low-index InP surfaces as a function of the phosphorus chemical potential, directly related to the P/In ratio. Experimental observations strongly suggest that the relative (111)A surface energy is probably smaller than the calculated value. We also discuss the evolution of the nanostructure shape with the InP-deposited thickness.

  3. Yield Improvement and Advanced Defect Control——Driving Forces for Modeling of Bulk Crystal Growth

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    Yield improvement and advanced defect control can be identified as the driving forces for modeling of industrial bulk crystal growth. Yield improvement is mainly achieved by upscaling of the whole crystal growth apparatus and increased processing windows with more tolerances for parameter variations. Advanced defect control means on one hand a reduction of the number of deficient crystal defects and on the other hand the formation of beneficial crystal defects with a uniform distribution and well defined concentrations in the whole crystal. This "defect engineering" relates to the whole crystal growth process as well as the following cooling and optional annealing processes, respectively. These topics were illustrated in the paper by examples of modeling and experimental results of bulk growth of silicon (Si), gallium arsenide (GaAs), indium phosphide (InP) and calcium fluoride (CaF2). These examples also involve the state of the art of modeling of the most important melt growth techniques, crystal pulling (Czochralski methods) and vertical gradient freeze (Bridgman-type methods).

  4. Frequency synthesizers concept to product

    CERN Document Server

    Chenakin, Alexander

    2011-01-01

    A frequency synthesizer is an electronic system for generating any of a range of frequencies from a single fixed oscillator. They are found in modern devices like radio receivers, mobile phones, and GPS systems. This comprehensive resource offers RF and microwave engineers a thorough overview of both well-established and recently developed frequency synthesizer design techniques. Professionals find expert guidance on all design aspects, including main architectures, key building blocks, and practical circuit implementation. Engineers learn the development process and gain a solid understanding

  5. X-Band PLL Synthesizer

    OpenAIRE

    P. Kutin; Vagner, P.

    2006-01-01

    This paper deals with design and realization of a PLL synthesizer for the microwave X−band. The synthesizer is intended for use as a local oscillator in a K−band downconverter. The design goal was to achieve very low phase noise and spurious free signal with a sufficient power level. For that purpose a low phase noise MMIC VCO was used in phase locked loop. The PLL works at half the output frequency, therefore there is a frequency doubler at the output of the PLL. The output signal ...

  6. Longitudinal bulk acoustic mass sensor

    DEFF Research Database (Denmark)

    Hales, Jan Harry; Teva, Jordi; Boisen, Anja

    2009-01-01

    A polycrystalline silicon longitudinal bulk acoustic cantilever is fabricated and operated in air at 51 MHz. A mass sensitivity of 100 Hz/fg (1 fg=10(-15) g) is obtained from the preliminary experiments where a minute mass is deposited on the device by means of focused ion beam. The total noise...

  7. Bulk viscosity and deflationary universes

    CERN Document Server

    Lima, J A S; Waga, I

    2007-01-01

    We analyze the conditions that make possible the description of entropy generation in the new inflationary model by means of a nearequilibrium process. We show that there are situations in which the bulk viscosity cannot describe particle production during the coherent field oscillations phase.

  8. The Universe With Bulk Viscosity

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    Exact solutions for a model with variable G, A and bulk viscosity areobtained. Inflationary solutions with constant (de Sitter-type) and variable energydensity are found. An expanding anisotropic universe is found to isotropize duringits expansion but a static universe cannot isotropize. The gravitational constant isfound to increase with time and the cosmological constant decreases with time asAo∝t-2.

  9. Template-synthesized opal hydrogels

    Institute of Scientific and Technical Information of China (English)

    LI Jun; JI Lijun; RONG Jianhua; YANG Zhenzhong

    2003-01-01

    Opal hydrogels could be synthesized with polymer inverse opal template. A pH responsive opal N-iso- propylacrylamide/acrylic acid copolymerized hydrogel was prepared as an example. The ordered structure and response to pH were investigated. Through the sol-gel process of tetrabutyl titanate, opal titania was obtained with the opal hydrogel template.

  10. Laboratory Syntheses of Insect Pheromones.

    Science.gov (United States)

    Cormier, Russell A.; Hoban, James N.

    1984-01-01

    Provides background information and procedures for the multi-step synthesis of tiger moth and boll weevil pheromones (sex attractants). These syntheses require several laboratory periods. The tiger moth pheromone synthesis is suitable for introductory organic chemistry while the boll weevil pheromone is recommended for an advanced laboratory…

  11. Information Retrieval for Ecological Syntheses

    Science.gov (United States)

    Bayliss, Helen R.; Beyer, Fiona R.

    2015-01-01

    Research syntheses are increasingly being conducted within the fields of ecology and environmental management. Information retrieval is crucial in any synthesis in identifying data for inclusion whilst potentially reducing biases in the dataset gathered, yet the nature of ecological information provides several challenges when compared with…

  12. Laboratory Syntheses of Insect Pheromones.

    Science.gov (United States)

    Cormier, Russell A.; Hoban, James N.

    1984-01-01

    Provides background information and procedures for the multi-step synthesis of tiger moth and boll weevil pheromones (sex attractants). These syntheses require several laboratory periods. The tiger moth pheromone synthesis is suitable for introductory organic chemistry while the boll weevil pheromone is recommended for an advanced laboratory…

  13. High performance etchant for thinning p(+)-InP and its application to p(+)n InP solar cell fabrication

    Science.gov (United States)

    Faur, Maria; Faur, Mircea; Bailey, Sheila; Brinker, David; Goradia, Manju; Weinberg, Irving; Fatemi, Navid

    1991-01-01

    An etchant, namely (o-H3PO4)u: (HNO3)v: (H2O2)t: (H2O)1-(u+v+t) is developed for thinning, after contacting, the p(+) emitter layer of p(+)n InP structures made by thermal diffusion. Varying u, v, and t, reproducible etch rates of 5 to 110 nm/min are obtained. After thinning the 0.6- to 2.5-micron thick p(+) InP layer down to 60-250 nm, specular surfaces are obtained at up to 80 nm/min etch rate. Due to its intrinsic qualities the resisual P-rich oxide after thinning the emitter layer provides surface passivation of p(+) InP surfaces and can also serve as a first-layer AR coating.

  14. Growth of vertical and defect free InP nanowires on SrTiO3(001) substrate and comparison with growth on silicon

    Science.gov (United States)

    Naji, K.; Dumont, H.; Saint-Girons, G.; Penuelas, J.; Patriarche, G.; Hocevar, M.; Zwiller, V.; Gendry, M.

    2012-03-01

    We present a study of the molecular beam epitaxy of InP nanowires (NWs) on (001) oriented SrTiO3 (STO) substrates using vapor liquid solid mechanism and gold-indium as metal catalyst. The growth direction of InP NWs grown on STO(001) is compared with NWs grown on (001) and (111) oriented silicon substrates. Gold-indium dewetting under a flux of indium results in the majority of InP NWs growing vertically from the surface of STO(001). With the growth parameters we have used the NWs have a pure wurtzite structure and are free of stacking faults and cubic segments. The structural quality of the NWs is confirmed by micro-photoluminescence measurements showing a narrow peak linewidth of 6.5 meV.

  15. InP Gunn diodes with a cathode contact injecting hot electrons. Part 1. Interactions between phases in the cathode contacts

    Directory of Open Access Journals (Sweden)

    Boltovets N. S.

    2010-10-01

    Full Text Available The article presents the research on interactions between phases in the Ge–Au, Ge–TiBx and Au–TiBxAu contacts to n–n+–n++-InP, both before and after rapid thermal annealing, and also the output parameters of Gunn diodes based on the InP structure with Au–TiBx–Au–Ge contact metallization in the –40...+60 °С temperature range. It is shown that ohmic contacts to InP layer are formed as a result of diffusion of Ge and Au atoms deep inside the layer. The output parameters of Gunn diodes with Au–TiBx–Au–Ge cathode contacts agree with the data obtained for InP Gunn diodes made with the use of more complicated technology.

  16. Low temperature planar regrowth of semi-insulating InP by low pressure hydride vapour phase epitaxy for device application

    Science.gov (United States)

    Alexandre, F.; Parillaud, O.; Nguyen, D. C.; Azoulay, R.; Quillec, M.; Bouchoule, S.; Le Mestreallan, G.; Juhel, M.; Le Roux, G.; Rao, E. V. K.

    1998-05-01

    The growth of both undoped and iron doped InP on planar as well as non-planar (0 0 1)InP substrates has been explored using low pressure hydride vapour phase epitaxy (LP-HVPE) in the temperature range of 500-620°C. Secondary ion mass spectroscopy (SIMS), X-ray diffraction and photoluminescence measurements have shown no drastic degradation in the crystal quality with decreasing growth temperature. The Fe incorporation in the layers is found to be independent of the substrate temperature ( Ts) and in all experiments semi-insulating InP : Fe layers with resistivities close to 10 9 Ω cm have been obtained. A perfect growth selectivity with no deposition on masked areas and a good planarized regrowth on mesas has been demonstrated even at low Ts.

  17. Thin-Film Solar Cells with InP Absorber Layers Directly Grown on Nonepitaxial Metal Substrates

    KAUST Repository

    Zheng, Maxwell

    2015-08-25

    The design and performance of solar cells based on InP grown by the nonepitaxial thin-film vapor-liquid-solid (TF-VLS) growth technique is investigated. The cell structure consists of a Mo back contact, p-InP absorber layer, n-TiO2 electron selective contact, and indium tin oxide transparent top electrode. An ex situ p-doping process for TF-VLS grown InP is introduced. Properties of the cells such as optoelectronic uniformity and electrical behavior of grain boundaries are examined. The power conversion efficiency of first generation cells reaches 12.1% under simulated 1 sun illumination with open-circuit voltage (VOC) of 692 mV, short-circuit current (JSC) of 26.9 mA cm-2, and fill factor (FF) of 65%. The FF of the cell is limited by the series resistances in the device, including the top contact, which can be mitigated in the future through device optimization. The highest measured VOC under 1 sun is 692 mV, which approaches the optically implied VOC of ≈795 mV extracted from the luminescence yield of p-InP. The design and performance of solar cells based on indium phosphide (InP) grown by the nonepitaxial thin-film vapor-liquid-solid growth technique is investigated. The cell structure consists of a Mo back contact, p-InP absorber layer, n-TiO2 electron selective contact, and an indium tin oxide transparent top electrode. The highest measured open circuit voltage (VOC) under 1 sun is 692 mV, which approaches the optically implied VOC of ≈795 mV extracted from the luminescence yield of p-InP.

  18. Growth and anisotropic transport properties of self-assembled InAs nanostructures in InP

    Energy Technology Data Exchange (ETDEWEB)

    Bierwagen, O.

    2007-12-20

    Self-assembled InAs nanostructures in InP, comprising quantum wells, quantum wires, and quantum dots, are studied in terms of their formation and properties. In particular, the structural, optical, and anisotropic transport properties of the nanostructures are investigated. The focus is a comprehending exploration of the anisotropic in-plane transport in large ensembles of laterally coupled InAs nanostructures. The self-assembled Stranski-Krastanov growth of InAs nanostructures is studied by gas-source molecular beam epitaxy on both nominally oriented and vicinal InP(001). Optical polarization of the interband transitions arising from the nanostructure type is demonstrated by photoluminescence and transmission spectroscopy. The experimentally convenient four-contact van der Pauw Hall measurement of rectangularly shaped semiconductors, usually applied to isotropic systems, is extended to yield the anisotropic transport properties. Temperature dependent transport measurements are performed in large ensembles of laterally closely spaced nanostructures. The transport of quantum wire-, quantum dash- and quantum dot containing samples is highly anisotropic with the principal axes of conductivity aligned to the <110> directions. The direction of higher mobility is [ anti 110], which is parallel to the direction of the quantum wires. In extreme cases, the anisotropies exceed 30 for electrons, and 100 for holes. The extreme anisotropy for holes is due to diffusive transport through extended states in the [ anti 110], and hopping transport through laterally localized states in the [110] direction, within the same sample. A novel 5-terminal electronic switching device based on gate-controlled transport anisotropy is proposed. The gate-control of the transport anisotropy in modulation-doped, self-organized InAs quantum wires embedded in InP is demonstrated. (orig.)

  19. Determination of the complex linear electro-optic coefficient of GaAs and InP

    Energy Technology Data Exchange (ETDEWEB)

    Pristovsek, Markus [Technische Universitaet Berlin, Institut fuer Festkoerperphysik, Hardenbergstrasse 36, 10623 Berlin (Germany)

    2010-08-15

    The complex linear electro-optic coefficient d{sub 41} was determined for the first time above the fundamental band gap of GaAs and InP by measuring the doping induced band bending of several oxidized samples in reflectance anisotropy spectroscopy. From the real and imaginary part of the change of the spectra for different carrier concentrations the spectral change of d{sub 41} was calculated. This is the first determination of the imaginary part Im(d{sub 41}). (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  20. First system experiments with a monolithically integrated tunable polarization diversity heterodyne receiver OEIC on InP

    Science.gov (United States)

    Hilbk, U.; Hermes, T.; Meissner, P.; Westphal, F. J.; Jacumeit, G.; Stenzel, R.; Unterboersch, G.

    1995-01-01

    System performance of an integrated polarization diversity heterodyne receiver optoelectronic IC (OEIC) is reported. The OEIC is monolithically integrated on InP. It includes a tunable 4 section DBR laser (quasi continuous tuning range 3.5 nm) and balanced photodiodes. The packaged OEIC is supplied with a fiber pigtail. Stable and polarization independent operation is achieved without any tendency for a bit error floor. The sensitivity at 1550.2 nm is -33.5 dBm at a bitrate of 140 Mbit/s. The performance of the OEIC based receiver is verified by operating in an experimental OFDM-TV distribution system with 4 channels.

  1. Transport phenomena in a high pressure crystal growth system: In situ synthesis for InP melt

    Science.gov (United States)

    Zhang, H.; Prasad, V.; Anselmo, A. P.; Bliss, D. F.; Iseler, G.

    1997-06-01

    The physical phenomena underlying the "one-step" in situ synthesis and high pressure growth of indium phosphide crystals are complex. A high resolution computer model based on multizone adaptive grid generation and curvilinear finite volume discretization is used to predict the flow and temperature fields during the synthesis of the InP melt. Simulations are performed for a range of parameters, including Grashof number, crucible rotation, and location of the injector. These parameters affect the gas flow in a high pressure liquid-encapsulated Czochralski (HPLEC) furnace significantly, and have a strong influence on the melt synthesis and its control.

  2. Kinetics of low pressure CVD growth of SiO2 on InP and Si

    Science.gov (United States)

    Iyer, R.; Lile, D. L.

    1988-01-01

    The kinetics of low pressure CVD growth of SiO2 from SiH4 and O2 has been investigated for the case of an indirect (remote) plasma process. Homogeneous (gas phase) and heterogeneous operating ranges have been experimentally identified. The process was shown to be consistent within the heterogeneous surface-reaction dominated range of operation. A kinetic rate equation is given for growth at 14 W RF power input and 400 mtorr total pressure on both InP and Si substrates. The process exhibits an activation energy of 8.4 + or - 0.6 kcal/mol.

  3. Morphology, luminescence, and electrical resistance response to H 2 and CO gas exposure of porous InP membranes prepared by electrochemistry in a neutral electrolyte

    Science.gov (United States)

    Volciuc, O.; Monaico, E.; Enachi, M.; Ursaki, V. V.; Pavlidis, D.; Popa, V.; Tiginyanu, I. M.

    2010-11-01

    Porous InP membranes have been prepared by anodization of InP wafers with electron concentration of 1 × 10 17 cm -3 and 1 × 10 18 cm -3 in a neutral NaCl electrolyte. The internal surfaces of pores in some membranes were modified by electrochemical deposition of gold in a pulsed voltage regime. Photoluminescence and photosensitivity measurements indicate efficient light trapping and porous surface passivation. The photoluminescence and electrical resistivity of the membranes are sensitive to the adsorption of H 2 and CO gas molecules. These properties are also influenced by the deposition of Au nanoparticles inside the pores.

  4. Morphology, luminescence, and electrical resistance response to H{sub 2} and CO gas exposure of porous InP membranes prepared by electrochemistry in a neutral electrolyte

    Energy Technology Data Exchange (ETDEWEB)

    Volciuc, O.; Monaico, E.; Enachi, M. [National Center for Materials Study and Testing, Technical University of Moldova, Bd. Stefan cel Mare 168, Chisinau 2004 (Moldova, Republic of); Ursaki, V.V., E-mail: ursaki@yahoo.com [Institute of Applied Physics, Academy of Sciences of Moldova, Academy str. 5, Chisinau 2028 (Moldova, Republic of); Pavlidis, D. [Fachgebiet fuer Hoechstfrequenzelektronik, Technische Universitaet Darmstadt, Merckstrasse 25, Darmstadt 64283 (Germany); Popa, V. [National Center for Materials Study and Testing, Technical University of Moldova, Bd. Stefan cel Mare 168, Chisinau 2004 (Moldova, Republic of); Fachgebiet fuer Hoechstfrequenzelektronik, Technische Universitaet Darmstadt, Merckstrasse 25, Darmstadt 64283 (Germany); Tiginyanu, I.M. [National Center for Materials Study and Testing, Technical University of Moldova, Bd. Stefan cel Mare 168, Chisinau 2004 (Moldova, Republic of); Institute of Electronic Engineering and Nanotechnologies, Academy of Sciences of Moldova, Academy str. 3/3, Chisinau 2028 (Moldova, Republic of)

    2010-11-15

    Porous InP membranes have been prepared by anodization of InP wafers with electron concentration of 1 x 10{sup 17} cm{sup -3} and 1 x 10{sup 18} cm{sup -3} in a neutral NaCl electrolyte. The internal surfaces of pores in some membranes were modified by electrochemical deposition of gold in a pulsed voltage regime. Photoluminescence and photosensitivity measurements indicate efficient light trapping and porous surface passivation. The photoluminescence and electrical resistivity of the membranes are sensitive to the adsorption of H{sub 2} and CO gas molecules. These properties are also influenced by the deposition of Au nanoparticles inside the pores.

  5. Cosmic bulk viscosity through backreaction

    CERN Document Server

    Barbosa, Rodrigo M; Zimdahl, Winfried; Piattella, Oliver F

    2015-01-01

    We consider an effective viscous pressure as the result of a backreaction of inhomogeneities within Buchert's formalism. The use of an effective metric with a time-dependent curvature radius allows us to calculate the luminosity distance of the backreaction model. This quantity is different from its counterpart for a "conventional" spatially flat bulk viscous fluid universe. Both expressions are tested against the SNIa data of the Union2.1 sample with only marginally different results.

  6. Bulk Superconductors in Mobile Application

    Science.gov (United States)

    Werfel, F. N.; Delor, U. Floegel-; Rothfeld, R.; Riedel, T.; Wippich, D.; Goebel, B.; Schirrmeister, P.

    We investigate and review concepts of multi - seeded REBCO bulk superconductors in mobile application. ATZ's compact HTS bulk magnets can trap routinely 1 T@77 K. Except of magnetization, flux creep and hysteresis, industrial - like properties as compactness, power density, and robustness are of major device interest if mobility and light-weight construction is in focus. For mobile application in levitated trains or demonstrator magnets we examine the performance of on-board cryogenics either by LN2 or cryo-cooler application. The mechanical, electric and thermodynamical requirements of compact vacuum cryostats for Maglev train operation were studied systematically. More than 30 units are manufactured and tested. The attractive load to weight ratio is more than 10 and favours group module device constructions up to 5 t load on permanent magnet (PM) track. A transportable and compact YBCO bulk magnet cooled with in-situ 4 Watt Stirling cryo-cooler for 50 - 80 K operation is investigated. Low cooling power and effective HTS cold mass drives the system construction to a minimum - thermal loss and light-weight design.

  7. X-Band PLL Synthesizer

    Directory of Open Access Journals (Sweden)

    P. Kutin

    2006-04-01

    Full Text Available This paper deals with design and realization of a PLL synthesizer for the microwave X−band. The synthesizer is intended for use as a local oscillator in a K−band downconverter. The design goal was to achieve very low phase noise and spurious free signal with a sufficient power level. For that purpose a low phase noise MMIC VCO was used in phase locked loop. The PLL works at half the output frequency, therefore there is a frequency doubler at the output of the PLL. The output signal from the frequency doubler is filtered by a band-pass filter and finally amplified by a single stage amplifier.

  8. Solid phase syntheses of oligoureas

    Energy Technology Data Exchange (ETDEWEB)

    Burgess, K.; Linthicum, D.S.; Russell, D.H.; Shin, H.; Shitangkoon, A.; Totani, R.; Zhang, A.J.; Ibarzo, J. [Texas A& M Univ., College Station, TX (United States)

    1997-02-19

    Isocyanates 7 were formed from monoprotected diamines 3 or 6, which in turn can be easily prepared from commercially available N-BOC- or N-FMOC-protected amino acid derivatives. Isocyanates 7, formed in situ, could be coupled directly to a solid support functionalized with amine groups or to amino acids anchored on resins using CH{sub 2}Cl{sub 2} as solvent and an 11 h coupling time at 25 {degree}C. Such couplings afforded peptidomimetics with an N-phthaloyl group at the N-terminus. The optimal conditions identified for removal of the N-phthaloyl group were to use 60% hydrazine in DMF for 1-3 h. Several sequences of amino acids coupled to ureas (`peptidic ureas`) and of sequential urea units (`oligoureas`) were prepared via solid phase syntheses and isolated by HPLC. Partition coefficients were measured for two of these peptidomimetics, and their water solubilities were found to be similar to the corresponding peptides. A small library of 160 analogues of the YGGFL-amide sequence was prepared via Houghten`s tea bag methodology. This library was tested for binding to the anti-{beta}-endorphin monoclonal antibody. Overall, this paper describes methodology for solid phase syntheses of oligourea derivatives with side chains corresponding to some of the protein amino acids. The chemistry involved is ideal for high-throughput syntheses and screening operations. 51 refs., 3 figs., 2 tabs.

  9. Alumina lightweight ceramics modified with plasma synthesized nanopowders

    Science.gov (United States)

    Zake, I.; Svinka, R.; Svinka, V.; Palcevskis, E.

    2011-12-01

    The aim of this study is to clarify possibilities of using plasma synthesized Al2O3 and SiC nanopowders as additives in alumina lightweight ceramics prepared by slip casting. Each plasma synthesized nanopowder (PSNP) was incorporated in the material by a different method, because of their diverse influence on the properties of slip. Al2O3 PSNP was introduced in the matrix in form of aqueous suspension. SiC nanopowder was added directly to raw materials. Bending strength, bulk density, apparent porosity and thermal shock resistance were determined to evaluate the influence of these additives. The effect of Al2O3 PSNP addition on the properties of material depends on the initial sintering temperature. SiC particles during sintering oxidize into SiO2 and then in the reaction with alumina form mullite. Addition of SiC considerably improves bending strength and thermal shock resistance.

  10. Study of growth properties of InAs islands on patterned InP substrates defined by focused ion beam

    Science.gov (United States)

    Ribeiro-Andrade, R.; Malachias, A.; Miquita, D. R.; Vasconcelos, T. L.; Kawabata, R.; Pires, M. P.; Souza, P. L.; Rodrigues, W. N.

    2017-03-01

    This work describes morphological and crystalline properties of the InAs islands grown on templates created by focused ion beam (FIB) on indium phosphide (InP) substrates. Regular arrangements of shallow holes are created on the InP (001) surfaces, acting as preferential nucleation sites for InAs islands grown by Metal-Organic Vapor Phase Epitaxy. Ion doses ranging from 1015 to 1016 Ga+/cm2 were used and islands were grown for two sub-monolayer coverages. We observe the formation of clusters in the inner surfaces of the FIB produced cavities and show that for low doses templates the nanostructures are mainly coherent while templates created with large ion doses lead to the growth of incoherent islands with larger island density. The modified island growth is described by a simple model based on the surface potential and the net adatom flow to the cavities. We observe that obtained morphologies result from a competition between coarsening and coalescence mechanisms.

  11. Hydrogen Passivation of Interstitial Zn Defects in Heteroepitaxial InP Cell Structures and Influence on Device Characteristics

    Science.gov (United States)

    Ringel, S. A.; Chatterjee, B.

    2004-01-01

    Hydrogen passivation of heteroepitaxial InP solar cells is of recent interest for deactivation of dislocations and other defects caused by the cell/substrate lattice mismatch that currently limit the photovoltaic performance of these devices. In this paper we present strong evidence that, in addition to direct hydrogen-dislocation interactions, hydrogen forms complexes with the high concentration of interstitial Zn defects present within the p(+) Zn-doped emitter of MOCVD-grown heteroepitaxial InP devices, resulting in a dramatic increase of the forward bias turn-on voltage by as much as 280 mV, from 680 mV to 960 mV. This shift is reproducible and thermally reversible and no such effect is observed for either n(+)p structures or homoepitaxial p(+)n structures grown under identical conditions. A combination of photoluminescence (PL), electrochemical C-V dopant profiling, SIMS and I-V measurements were performed on a set of samples having undergone a matrix of hydrogenation and post-hydrogenation annealing conditions to investigate the source of this voltage enhancement and confirm the expected role of interstitial Zn and hydrogen. A precise correlation between all measurements is demonstrated which indicates that Zn interstitials within the p(+) emitter and their interaction with hydrogen are indeed responsible for this device behavior.

  12. Vertical and Smooth, etching of InP by Cl2/CH4/Ar Inductively Coupled Plasma at Room Temperature

    Institute of Scientific and Technical Information of China (English)

    孙长征; 周进波; 熊兵; 王健; 罗毅

    2003-01-01

    We study the room-temperature dry, etching of InP by inductively coupled plasma (ICP) using Cl2/CH4/Ar mixtures. Etches were characterized in terms of anisotropy and surface roughness by scanning electron microscopy and atomic force microscopy, respectively. It is found that the flow ratio between Cl2 and CH4, ICP power, rf chuck power, and table temperature can greatly influence the, etching results. By adjusting, etching parameters,vertical sidewall and smooth surface can be obtained simultaneously, together with a moderate, etch rate and a good select ratio. The root-mean-square surface roughness is measured to be as low as 0.27nm. To the best of our knowledge, this is the best result for InP to date. The, etch rate is 855 nm/min, and the selectivity ratio over SiO2 is estimated to be higher than 15:1. The stoichiometry of the, etched surface has also been investigated by Auger electron spectroscopy. The, etched surface is found to manifest a slight P deficiency, and the ratio between P and In reaches the stoichiometric value within about 0.75nm depth into the surface.

  13. Modulation of electrical properties in Cu/n-type InP Schottky junctions using oxygen plasma treatment

    Science.gov (United States)

    Kim, Hogyoung; Cho, Yunae; Jung, Chan Yeong; Kim, Se Hyun; Kim, Dong-Wook

    2015-12-01

    Using current-voltage (I-V) measurements, we investigated the effect of oxygen plasma treatment on the temperature-dependent electrical properties of Cu/n-type indium phosphide (InP) Schottky contacts at temperatures in the range 100-300 K. Changes in the electrical parameters were evident below 180 K for the low-plasma-power sample (100 W), which is indicative of the presence of a wider distribution of regions of low barrier height. Modified Richardson plots were used to obtain Richardson constants, which were similar to the theoretical value of 9.4 A cm-2 K-2 for n-type InP. This suggests that, for all the samples, a thermionic emission model including a spatially inhomogeneous Schottky barrier can be used to describe the charge transport phenomena at the metal/semiconductor interface. The voltage dependence of the reverse-bias current revealed that Schottky emission was dominant for the untreated and high-plasma-power (250 W) samples. For the low-plasma-power sample, Poole-Frenkel emission was dominant at low voltages, whereas Schottky emission dominated at higher voltages. Defect states and nonuniformity of the interfacial layer appear to be significant in the reverse-bias charge transport properties of the low-plasma-power sample.

  14. Model of a realistic InP surface quantum dot extrapolated from atomic force microscopy results.

    Science.gov (United States)

    Barettin, Daniele; De Angelis, Roberta; Prosposito, Paolo; Auf der Maur, Matthias; Casalboni, Mauro; Pecchia, Alessandro

    2014-05-16

    We report on numerical simulations of a zincblende InP surface quantum dot (QD) on In₀.₄₈Ga₀.₅₂ buffer. Our model is strictly based on experimental structures, since we extrapolated a three-dimensional dot directly by atomic force microscopy results. Continuum electromechanical, [Formula: see text] bandstructure and optical calculations are presented for this realistic structure, together with benchmark calculations for a lens-shape QD with the same radius and height of the extrapolated dot. Interesting similarities and differences are shown by comparing the results obtained with the two different structures, leading to the conclusion that the use of a more realistic structure can provide significant improvements in the modeling of QDs fact, the remarkable splitting for the electron p-like levels of the extrapolated dot seems to prove that a realistic experimental structure can reproduce the right symmetry and a correct splitting usually given by atomistic calculations even within the multiband [Formula: see text] approach. Moreover, the energy levels and the symmetry of the holes are strongly dependent on the shape of the dot. In particular, as far as we know, their wave function symmetries do not seem to resemble to any results previously obtained with simulations of zincblende ideal structures, such as lenses or truncated pyramids. The magnitude of the oscillator strengths is also strongly dependent on the shape of the dot, showing a lower intensity for the extrapolated dot, especially for the transition between the electrons and holes ground state, as a result of a relevant reduction of the wave functions overlap. We also compare an experimental photoluminescence spectrum measured on an homogeneous sample containing about 60 dots with a numerical ensemble average derived from single dot calculations. The broader energy range of the numerical spectrum motivated us to perform further verifications, which have clarified some aspects of the experimental

  15. Interaction of graphene quantum dots with bulk semiconductor surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Mohapatra, P. K.; Singh, B. P., E-mail: bhanups@iitb.ac.in [Department of physics, IIT Bombay, Mumbai-400076 (India); Kushavah, Dushyant; Mohapatra, J. [Centre for Research in Nanotechnology and Science, IIT Bombay-400076, Mumbai (India)

    2015-05-15

    Highly luminescent graphene quantum dots (GQDs) are synthesized through thermolysis of glucose. The average lateral size of the synthesized GQDs is found to be ∼5 nm. The occurrence of D and G band at 1345 and 1580 cm{sup −1} in Raman spectrum confirms the presence of graphene layers. GQDs are mostly consisting of 3 to 4 graphene layers as confirmed from the AFM measurements. Photoluminescence (PL) measurement shows a distinct broadening of the spectrum when GQDs are on the semiconducting bulk surface compared to GQDs in water. The time resolved PL measurement shows a significant shortening in PL lifetime due to the substrate interaction on GQDs compared to the GQDs in solution phase.

  16. In Situ Formation of Carbon Nanomaterials on Bulk Metallic Materials

    Directory of Open Access Journals (Sweden)

    J. Y. Xu

    2014-01-01

    Full Text Available Carbon nanomaterials were synthesized in situ on bulk 316L stainless steel, pure cobalt, and pure nickel by hybrid surface mechanical attrition treatment (SMAT. The microstructures of the treated samples and the resulted carbon nanomaterials were investigated by SEM and TEM characterizations. Different substrates resulted in different morphologies of products. The diameter of carbon nanomaterials is related to the size of the nanograins on the surface layer of substrates. The possible growth mechanism was discussed. Effects of the main parameters of the synthesis, including the carbon source and gas reactant composition, hydrogen, and the reaction temperature, were studied. Using hybrid SMAT is proved to be an effective way to synthesize carbon nanomaterials in situ on surfaces of metallic materials.

  17. Bulk Moisture and Salinity Sensor

    Science.gov (United States)

    Nurge, Mark; Monje, Oscar; Prenger, Jessica; Catechis, John

    2013-01-01

    Measurement and feedback control of nutrient solutions in plant root zones is critical to the development of healthy plants in both terrestrial and reduced-gravity environments. In addition to the water content, the amount of fertilizer in the nutrient solution is important to plant health. This typically requires a separate set of sensors to accomplish. A combination bulk moisture and salinity sensor has been designed, built, and tested with different nutrient solutions in several substrates. The substrates include glass beads, a clay-like substrate, and a nutrient-enriched substrate with the presence of plant roots. By measuring two key parameters, the sensor is able to monitor both the volumetric water content and salinity of the nutrient solution in bulk media. Many commercially available moisture sensors are point sensors, making localized measurements over a small volume at the point of insertion. Consequently, they are more prone to suffer from interferences with air bubbles, contact area of media, and root growth. This makes it difficult to get an accurate representation of true moisture content and distribution in the bulk media. Additionally, a network of point sensors is required, increasing the cabling, data acquisition, and calibration requirements. measure the dielectric properties of a material in the annular space of the vessel. Because the pore water in the media often has high salinity, a method to measure the media moisture content and salinity simultaneously was devised. Characterization of the frequency response for capacitance and conductance across the electrodes was completed for 2-mm glass bead media, 1- to 2-mm Turface (a clay like media), and 1- to 2-mm fertilized Turface with the presence of root mass. These measurements were then used to find empirical relationships among capacitance (C), the dissipation factor (D), the volumetric water content, and the pore water salinity.

  18. Toughness of Bulk Metallic Glasses

    Directory of Open Access Journals (Sweden)

    Shantanu V. Madge

    2015-07-01

    Full Text Available Bulk metallic glasses (BMGs have desirable properties like high strength and low modulus, but their toughness can show much variation, depending on the kind of test as well as alloy chemistry. This article reviews the type of toughness tests commonly performed and the factors influencing the data obtained. It appears that even the less-tough metallic glasses are tougher than oxide glasses. The current theories describing the links between toughness and material parameters, including elastic constants and alloy chemistry (ordering in the glass, are discussed. Based on the current literature, a few important issues for further work are identified.

  19. Synthesized Optimization of Triangular Mesh

    Institute of Scientific and Technical Information of China (English)

    HU Wenqiang; YANG Wenyu

    2006-01-01

    Triangular mesh is often used to describe geometric object as computed model in digital manufacture, thus the mesh model with both uniform triangular shape and excellent geometric shape is expected. But in fact, the optimization of triangular shape often is contrary with that of geometric shape. In this paper, one synthesized optimizing algorithm is presented through subdividing triangles to achieve the trade-off solution between the geometric and triangular shape optimization of mesh model. The result mesh with uniform triangular shape and excellent topology are obtained.

  20. Physiologically driven avian vocal synthesizer

    Science.gov (United States)

    Sitt, Jacobo D.; Arneodo, Ezequiel M.; Goller, Franz; Mindlin, Gabriel B.

    2010-03-01

    In this work, we build an electronic syrinx, i.e., a programmable electronic device capable of integrating biomechanical model equations for the avian vocal organ in order to synthesize song. This vocal prosthesis is controlled by the bird’s neural instructions to respiratory and the syringeal motor systems, thus opening great potential for studying motor control and its modification by sensory feedback mechanisms. Furthermore, a well-functioning subject-controlled vocal prosthesis can lay the foundation for similar devices in humans and thus provide directly health-related data and procedures.

  1. Method of synthesizing tungsten nanoparticles

    Science.gov (United States)

    Thoma, Steven G; Anderson, Travis M

    2013-02-12

    A method to synthesize tungsten nanoparticles has been developed that enables synthesis of nanometer-scale, monodisperse particles that can be stabilized only by tetrahydrofuran. The method can be used at room temperature, is scalable, and the product concentrated by standard means. Since no additives or stabilizing surfactants are required, this method is particularly well suited for producing tungsten nanoparticles for dispersion in polymers. If complete dispersion is achieved due to the size of the nanoparticles, then the optical properties of the polymer can be largely maintained.

  2. Longitudinal and transverse exciton-spin relaxation in a single InAsP quantum dot embedded inside a standing InP nanowire using photoluminescence spectroscopy

    NARCIS (Netherlands)

    Sasakura, H.; Hermannstädter, C.; Dorenbos, S.N.; Akopian, N.; Van Kouwen, M.P.; Motohisa, J.; Kobayashi, Y.; Kumano, H.; Kondo, K.; Tomioka, K.; Fukui, T.; Suemune, I.; Zwiller, V.

    2012-01-01

    We have investigated the optical properties of a single InAsP quantum dot embedded in a standing InP nanowire. Elongation of the transverse exciton-spin relaxation time of the exciton state with decreasing excitation power was observed by first-order photon correlation measurements. This behavior is

  3. Growing InGaAs quasi-quantum wires inside semi-rhombic shaped planar InP nanowires on exact (001) silicon

    Science.gov (United States)

    Han, Yu; Li, Qiang; Chang, Shih-Pang; Hsu, Wen-Da; Lau, Kei May

    2016-06-01

    We report InGaAs quasi-quantum wires embedded in planar InP nanowires grown on (001) silicon emitting in the 1550 nm communication band. An array of highly ordered InP nanowire with semi-rhombic cross-section was obtained in pre-defined silicon V-grooves through selective-area hetero-epitaxy. The 8% lattice mismatch between InP and Si was accommodated by an ultra-thin stacking disordered InP/GaAs nucleation layer. X-ray diffraction and transmission electron microscope characterizations suggest excellent crystalline quality of the nanowires. By exploiting the morphological evolution of the InP and a self-limiting growth process in the V-grooves, we grew embedded InGaAs quantum-wells and quasi-quantum-wires with tunable shape and position. Room temperature analysis reveals substantially improved photoluminescence in the quasi-quantum wires as compared to the quantum-well reference, due to the reduced intrusion defects and enhanced quantum confinement. These results show great promise for integration of III-V based long wavelength nanowire lasers on the well-established (001) Si platform.

  4. A physical based equivalent circuit modeling approach for ballasted InP DHBT multi-finger devices at millimeter-wave frequencies

    DEFF Research Database (Denmark)

    Midili, Virginio; Squartecchia, Michele; Johansen, Tom Keinicke

    2016-01-01

    Multifinger InP DHBTs can be designed with a ballasting resistor to improve power capability. However accurate modeling is needed to predict high frequency behavior of the device. This paper presents two distinct modeling approaches: one based on EM simulations and one based on a physical equival...

  5. Fe-contacts on InAs(100) and InP(100) characterised by conversion electron Mössbauer spectroscopy

    DEFF Research Database (Denmark)

    Damsgaard, Christian Danvad; Gunnlaugsson, H.P; Weyer, G.;

    2005-01-01

    We have grown 4 nm thin films of Fe-57 on InAs(100) and InP(100) surfaces by use of MBE and studied the samples by Fe-57 conversion electron Mossbauer spectroscopy. In the case of InAs, the Mossbauer spectrum showed a sextet due to alpha-Fe and a further magnetically split component with slightly...

  6. Photoreflectance and DLTS evaluation of plasma-induced damage in GaAs and InP prior to solar cell fabrication

    Science.gov (United States)

    He, L.; Anderson, W. A.

    1991-01-01

    The effect is considered of plasma etching on both GaAs and InP followed by damage removal using rapid thermal annealing (RTA). Effects of these processes were studied by photoreflectance spectroscopy (PR) and deep level transient spectroscopy (DLTS). These techniques are useful in evaluation of wafers prior to and effects of plasma processing during solar cell fabrication.

  7. Exploring the effective photon management by InP nanoparticles: Broadband light absorption enhancement of InP/In{sub 0.53}Ga{sub 0.47}As/InP thin-film photodetectors

    Energy Technology Data Exchange (ETDEWEB)

    Fu, Dong; Zhu, Xi; Li, Jian; Xu, Yun; Song, Guofeng; Wei, Xin, E-mail: weix@red.semi.ac.cn [Nano-optoelectronics Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); Liu, Jietao [School of Physics and Optoelectronic Engineering, Xidian University, Xi' an, Shannxi 710071 (China)

    2015-05-28

    High-index dielectric and semiconductor nanoparticles with the characteristics of low absorption loss and strong scattering have attracted more and more attention for improving performance of thin-film photovoltaic devices. In this paper, we focus our attention on InP nanoparticles and study the influence of the substrate and the geometrical configurations on their scattering properties. We demonstrate that, compared with the InP sphere, the InP cylinder has higher coupling efficiency due to the stronger interactions between the optical mode in the nanoparticle and its induced mirror image in the substrate. Moreover, we propose novel thin-film InGaAs photodetectors integrated with the periodically arranged InP nanoparticles on the substrate. Broadband light absorption enhancement is achieved over the wavelength range between 1.0 μm and 1.7 μm. The highest average absorption enhancement of 59.7% is realized for the photodetector with the optimized cylinder InP nanoparticles. These outstanding characteristics attribute to the preferentially forward scattering of single InP nanoparticle along with the effective coupling of incident light into the guided modes through the collective diffraction effect of InP nanoparticles array.

  8. Facilitated catecholamine transport through bulk and polymer-supported liquid membranes

    NARCIS (Netherlands)

    Paugam, Marie-France; Bien, Jeffrey T.; Smith, Bradley D.; Chrisstoffels, L.A.J.; de Jong, Feike; Reinhoudt, David

    1996-01-01

    A series of crown boronic acids, 1-4, were synthesized and studied as carriers for catecholamine transport through bulk liquid membranes (BLMs) and supported liquid membranes (SLMs). Carrier 1 greatly facilitated the transport of primary catecholamines through BLMs; whereas, the more lipophilic anal

  9. The microstructure network and thermoelectric properties of bulk (Bi,Sb)2Te3

    DEFF Research Database (Denmark)

    Xie, Wenjie; Hitchcock, Dale A.; Kang, Hye J.

    2012-01-01

    We report small-angle neutron scattering studies on the microstructure network in bulk (Bi,Sb)(2)Te-3 synthesized by the melt-spinning (MS) and the spark-plasma-sintering (SPS) process. We find that rough interfaces of multiscale microstructures generated by the MS are responsible for the large...

  10. Handling of bulk solids theory and practice

    CERN Document Server

    Shamlou, P A

    1990-01-01

    Handling of Bulk Solids provides a comprehensive discussion of the field of solids flow and handling in the process industries. Presentation of the subject follows classical lines of separate discussions for each topic, so each chapter is self-contained and can be read on its own. Topics discussed include bulk solids flow and handling properties; pressure profiles in bulk solids storage vessels; the design of storage silos for reliable discharge of bulk materials; gravity flow of particulate materials from storage vessels; pneumatic transportation of bulk solids; and the hazards of solid-mater

  11. Asymmetric Syntheses Aided by Biocatalysts

    Institute of Scientific and Technical Information of China (English)

    陈沛然; 顾建新; 魏志亮; 韩世清; 李祖义; 林国强

    2003-01-01

    This article summarizes the achievements of the authors' group in the area of biocatalyst-catalyzed organic reactions in recent 10 years. A strain of Geotrichum sp. obtained by screeninu is capable of stereoselectlvely reducing a number of carbonyl compounds. In many cases, the stermghemistry is complementary with that obtained by baker' s yeast. Therefore, this microorganism provides a useful pathway to the preparation of alcohol eompounds with specific configurations. On the other hand, a nmmber of plant sourees have been screened for oxynitrilases and the hydrocyanation reactions of various arylcarboxalde-hydes have been investigated.A"micro-aqueous reaction system" was invented,by which a serles of novel optically active cyanohydrins were prepared.On this hasis,a high through-put comtimasous reaction system has been designed.This paper also deseribes examples of the syntheses of bio-active compounds by using the optieally active compounds obtained from the above mentioned catalytic reactions as precursors.

  12. New fermions in the bulk

    CERN Document Server

    de Brito, K P S

    2016-01-01

    Spinor fields on 5-dimensional Lorentzian manifolds are classified, according to the geometric Fierz identities that involve their bilinear covariants. Based upon this classification that generalises the celebrated 4-dimensional Lounesto classification of spinor fields, new non-trivial classes of 5-dimensional spinor fields are, hence, found, with important potential applications regarding bulk fermions and their subsequent localisation on brane-worlds. In addition, quaternionic bilinear covariants are used to derive the quaternionic spin density, through the truncated exterior bundle. In order to accomplish a realisation of these new spinors, a Killing vector field is constructed on the horizon of 5-dimensional Kerr black holes. This Killing vector field is shown to reach the time-like Killing vector field at the spatial infinity, through a current 1-form density, constructed with the derived new spinor fields. The current density is, moreover, expressed as the f\\"unfbein components, assuming a condensed for...

  13. New fermions in the bulk

    Science.gov (United States)

    de Brito, K. P. S.; da Rocha, Roldão

    2016-10-01

    The spinor fields on 5-dimensional Lorentzian manifolds are classified according to the geometric Fierz identities, which involve their bilinear covariants. Based upon this classification, which generalises the celebrated 4-dimensional Lounesto classification of spinor fields, new non-trivial classes of 5-dimensional spinor fields are hence found, with important potential applications regarding bulk fermions and their subsequent localisation on brane-worlds. In addition, quaternionic bilinear covariants are used to derive the quaternionic spin density through the truncated exterior bundle. In order to accomplish the realisation of these new spinors, a Killing vector field is constructed on the horizon of a 5-dimensional Kerr black hole. This Killing vector field is shown to reach the time-like Killing vector field at spatial infinity through a current 1-form density, constructed with the new derived spinor fields. The current density is, moreover, expressed as the fünfbein component, assuming a condensed form.

  14. Nanofluidics, from bulk to interfaces.

    Science.gov (United States)

    Bocquet, Lydéric; Charlaix, Elisabeth

    2010-03-01

    Nanofluidics has emerged recently in the footsteps of microfluidics, following the quest for scale reduction inherent to nanotechnologies. By definition, nanofluidics explores transport phenomena of fluids at nanometer scales. Why is the nanometer scale specific? What fluid properties are probed at nanometric scales? In other words, why does 'nanofluidics' deserve its own brand name? In this critical review, we will explore the vast manifold of length scales emerging for fluid behavior at the nanoscale, as well as the associated mechanisms and corresponding applications. We will in particular explore the interplay between bulk and interface phenomena. The limit of validity of the continuum approaches will be discussed, as well as the numerous surface induced effects occurring at these scales, from hydrodynamic slippage to the various electro-kinetic phenomena originating from the couplings between hydrodynamics and electrostatics. An enlightening analogy between ion transport in nanochannels and transport in doped semi-conductors will be discussed (156 references).

  15. Comparisons of Accurate Electronic, Transport, and Bulk Properties of XP (X = B, Al, Ga, In)

    Science.gov (United States)

    Malozovsky, Yuriy; Ejembi, John; Saliev, Azizjon; Franklin, Lashounda; Bagayoko, Diola

    We present comparisons of results from ab-initio,self-consistent local density approximation (LDA) calculations of accurate, electronic and related properties of zinc blende XP (X =B, Al, Ga, In) phosphides. We implemented the linear combination of atomic orbitals following the Bagayoko, Zhao, and Williams (BZW) method as enhanced by Ekuma and Franklin (BZW-EF). Consequently, our results have the full physical content of DFT and agree very well with corresponding experimental ones [AIP Advances, 4, 127104 (2014)]. Our calculated, indirect band gap of 2.02 eV for BP, 2.56 eV for AlP, and of 2.29 eV for GaP, from Γ to X-point, are in excellent agreement with experimental values. Our calculated direct band gap of 1.43 eV, at Γ, for InP is also in an excellent agreement with experimental value. We discuss calculated electron and hole effective masses, total (DOS) and partial (pDOS) densities of states, and the bulk modulus of these phosphides. Acknowledgments: NSF and the Louisiana Board of Regents, LASiGMA [Award Nos. EPS- 1003897, NSF (2010-15)-RII-SUBR] and NSF HRD-1002541, DOE - National, Nuclear Security Administration (NNSA) (Award Nos. DE-NA0001861 and DE- NA0002630), LaSPACE, and LONI-SUBR.

  16. Ten-Fold Enhancement of InAs Nanowire Photoluminescence Emission with an InP Passivation Layer.

    Science.gov (United States)

    Jurczak, Pamela; Zhang, Yunyan; Wu, Jiang; Sanchez, Ana M; Aagesen, Martin; Liu, Huiyun

    2017-06-14

    In this Letter, we demonstrate that a significant improvement of optical performance of InAs nanowires can be achieved by capping the core InAs nanowires with a thin InP shell, which successfully passivates the surface states reducing the rate of nonradiative recombination. The improvements have been confirmed by detailed photoluminescence measurements, which showed up to a 10-fold increase in the intensity of room-temperature photoluminescence from the capped InAs/InP nanowires compared to the sample with core-only InAs nanowires. Moreover, the nanowires exhibit a high stability of total photoluminescence emission strength across temperature range from 10 to 300 K as a result of strong quantum confinement. These findings could be the key to successful implementation of InAs nanowires into optoelectronic devices.

  17. Design of MEMS-tunable novel monolithic optical filters in InP with horizontal bragg mirrors

    Science.gov (United States)

    Datta, Madhumita; Pruessner, Marcel W.; Kelly, Daniel P.; Ghodssi, Reza

    2004-11-01

    This paper presents the theoretical design and analysis of a tunable Fabry-Perot resonant microcavity filter realized by movable-waveguide-based integrated optical MEMS technology in InP. Wide-bandwidth, high-reflectivity horizontal InP/air-gap distributed bragg reflector (DBR) mirrors monolithically integrated with the waveguides have been proposed. The filter can be tuned by moving one of the high-reflectivity mirrors axially with on-chip MEMS electrostatic actuation. Spectral performance of the filter is numerically simulated taking into account the diffraction effects. Finite element mechanical modeling of the parallel-plate capacitive microactuator, consisting of a micromachined suspension beam and fixed electrodes, predicts a wide wavelength tuning range (1250-1650 nm) achievable by low actuation voltage (<7 V).

  18. Growth of anodic films on compound semiconductor electrodes: InP in aqueous (NH sub 4) sub 2 S

    CERN Document Server

    Buckley, D N

    2002-01-01

    Film formation on compound semiconductors under anodic conditions is discussed. The surface properties of InP electrodes were examined following anodization in a (NH sub 4) sub 2 S electrolyte. The observation of a current peak in the cyclic voltammetric curve was attributed to selective etching of the substrate and a film formation process. AFM images of samples anodized in the sulfide solution revealed surface pitting. Thicker films formed at higher potentials exhibited extensive cracking as observed by optical and electron microscopy, and this was explicitly demonstrated to occur ex situ rather than during the electrochemical treatment. The composition of the thick film was identified as In sub 2 S sub 3 by EDX and XPS. The measured film thickness varies linearly with the charge passed, and comparison between experimental thickness measurements and theoretical estimates for the thickness indicate a porosity of over 70 %. Cracking is attributed to shrinkage during drying of the highly porous film and does n...

  19. Fullerene-assisted electron-beam lithography for pattern improvement and loss reduction in InP membrane waveguide devices.

    Science.gov (United States)

    Jiao, Yuqing; Pello, Josselin; Mejia, Alonso Millan; Shen, Longfei; Smalbrugge, Barry; Geluk, Erik Jan; Smit, Meint; van der Tol, Jos

    2014-03-15

    In this Letter, we present a method to prepare a mixed electron-beam resist composed of a positive resist (ZEP520A) and C60 fullerene. The addition of C60 to the ZEP resist changes the material properties under electron beam exposure significantly. An improvement in the thermal resistance of the mixed material has been demonstrated by fabricating multimode interference couplers and coupling regions of microring resonators. The fabrication of distributed Bragg reflector structures has shown improvement in terms of pattern definition accuracy with respect to the same structures fabricated with normal ZEP resist. Straight InP membrane waveguides with different lengths have been fabricated using this mixed resist. A decrease of the propagation loss from 6.6 to 3.3  dB/cm has been demonstrated.

  20. High-power InP quantum dot based semiconductor disk laser exceeding 1.3 W

    Science.gov (United States)

    Schwarzbäck, T.; Bek, R.; Hargart, F.; Kessler, C. A.; Kahle, H.; Koroknay, E.; Jetter, M.; Michler, P.

    2013-03-01

    We demonstrate an optically pumped semiconductor disk laser (OP-SDL) using InP quantum dots (QDs) as active material fabricated by metal-organic vapor-phase epitaxy. The QDs are grown within [(Al0.1Ga0.9)0.52In0.48]0.5P0.5 (abbr. Al0.1GaInP) barriers in order to achieve an emission wavelength around 655 nm. We present optical investigations of the active region showing typical QD behavior like blue shift with increasing excitation power and single emission lines, which show anti-bunching in an intensity auto-correlation measurement. We report maximum output powers of the OP-SDL of 1.39 W at low emission wavelength of ˜654 nm with a slope efficiency of ηdiff=25.4 %.

  1. Strong mode coupling in InP quantum dot-based GaInP microdisk cavity dimers

    Science.gov (United States)

    Witzany, M.; Liu, T.-L.; Shim, J.-B.; Hargart, F.; Koroknay, E.; Schulz, W.-M.; Jetter, M.; Hu, E.; Wiersig, J.; Michler, P.

    2013-01-01

    We report on strong mode coupling in closely spaced GaInP microdisk dimer structures including InP quantum dots as the active medium. Using electron beam lithography and a combination of dry- and wet-etch processes, dimers with inter-disk separations down to d < 100 nm have been fabricated. Applying a photo-thermal heating scheme, we overcome the spectral mode detuning due to the size mismatch between the two disks forming the dimer. We observe signatures of mode coupling in the corresponding photoluminescence spectra with coupling energies of up to 0.66 MeV. With the aid of a numerical analysis, we specify the geometrical and physical factors of the microdisk dimer precisely, and reproduce its spectrum with good agreement.

  2. A Physics-Based Charge-Control Model for InP DHBT Including Current-Blocking Effect

    Institute of Scientific and Technical Information of China (English)

    GE Ji; JIN Zhi; SU Yong-Bo; CHENG Wei; WANG Xian-Wai; CHEN Gao-Peng; LIU Xin-Yu

    2009-01-01

    We develop a physics-based charge-control InP double heterojunction bipolar transistor model including three important effects: current blocking, mobile-charge modulation of the base-collector capacitance and velocity-field modulation in the transit time. The bias-dependent base-collector depletion charge is obtained analytically, which takes into account the mobile-charge modulation. Then, a measurement based voltage-dependent transit time formulation is implemented. As a result, over a wide range of biases, the developed model shows good agreement between the modeled and measured S-parameters and cutoff frequency. Also, the model considering current blocking effect demonstrates more accurate prediction of the output characteristics than conventional vertical bipolar inter company results.

  3. C-band fundamental/first-order mode converter based on multimode interference coupler on InP substrate

    Science.gov (United States)

    Limeng, Zhang; Dan, Lu; Zhaosong, Li; Biwei, Pan; Lingjuan, Zhao

    2016-12-01

    The design, fabrication and characterization of a fundamental/first-order mode converter based on multimode interference coupler on InP substrate were reported. Detailed optimization of the device parameters were investigated using 3D beam propagation method. In the experiments, the fabricated mode converter realized mode conversion from the fundamental mode to the first-order mode in the wavelength range of 1530-1565 nm with excess loss less than 3 dB. Moreover, LP01 and LP11 fiber modes were successfully excited from a few-mode fiber by using the device. This InP-based mode converter can be a possible candidate for integrated transceivers for future mode-division multiplexing system. Project supported by the National Basic Research Program of China (No. 2014CB340102) and in part by the National Natural Science Foundation of China (Nos. 61274045, 61335009).

  4. Monolithic InP strictly non-blocking 8×8 switch for high-speed WDM optical interconnection.

    Science.gov (United States)

    Kwack, Myung-Joon; Tanemura, Takuo; Higo, Akio; Nakano, Yoshiaki

    2012-12-17

    A strictly non-blocking 8 × 8 switch for high-speed WDM optical interconnection is realized on InP by using the phased-array scheme for the first time. The matrix switch architecture consists of over 200 functional devices such as star couplers, phase-shifters and so on without any waveguide cross-section. We demonstrate ultra-broad optical bandwidth covering the entire C-band through several Input/Output ports combination with extinction ratio performance of more than 20dB. Also, nanoseconds reconfiguration time was successfully achieved by dynamic switching experiment. Error-free transmission was verified for 40-Gbps (10-Gbps × 4ch) WDM signal.

  5. RF SYNTHESIZER WITH DIRECT DIGITAL SYNTHESIZ

    Directory of Open Access Journals (Sweden)

    V. V. Murav’iov

    2014-01-01

    Full Text Available A synthesizer of frequencies with direct digital synthesis and a frequency multiplier on PLL are developed. Phase noises of an output signal of the synthesizer, noise of a loop of PLL, level of collateral radiations on outputs of the digital synthesizer (frequency of 100 MHz and the frequency multiplier output on a loop of PLL (frequency of 8 GHz are probed.

  6. Adding GaAs Monolayers to InAs Quantum-Dot Lasers on (001) InP

    Science.gov (United States)

    Qiu, Yueming; Chacon, Rebecca; Uhl, David; Yang, Rui

    2005-01-01

    In a modification of the basic configuration of InAs quantum-dot semiconductor lasers on (001)lnP substrate, a thin layer (typically 1 to 2 monolayer thick) of GaAs is incorporated into the active region. This modification enhances laser performance: In particular, whereas it has been necessary to cool the unmodified devices to temperatures of about 80 K in order to obtain lasing at long wavelengths, the modified devices can lase at wavelengths of about 1.7 microns or more near room temperature. InAs quantum dots self-assemble, as a consequence of the lattice mismatch, during epitaxial deposition of InAs on ln0.53Ga0.47As/lnP. In the unmodified devices, the quantum dots as thus formed are typically nonuniform in size. Strainenergy relaxation in very large quantum dots can lead to poor laser performance, especially at wavelengths near 2 microns, for which large quantum dots are needed. In the modified devices, the thin layers of GaAs added to the active regions constitute potential-energy barriers that electrons can only penetrate by quantum tunneling and thus reduce the hot carrier effects. Also, the insertion of thin GaAs layer is shown to reduce the degree of nonuniformity of sizes of the quantum dots. In the fabrication of a batch of modified InAs quantum-dot lasers, the thin additional layer of GaAs is deposited as an interfacial layer in an InGaAs quantum well on (001) InP substrate. The device as described thus far is sandwiched between InGaAsPy waveguide layers, then further sandwiched between InP cladding layers, then further sandwiched between heavily Zn-doped (p-type) InGaAs contact layer.

  7. Synthese de champs sonores adaptative

    Science.gov (United States)

    Gauthier, Philippe-Aubert

    La reproduction de champs acoustiques est une approche physique au probleme technologique de la spatialisation sonore. Cette these concerne l'aspect physique de la reproduction de champs acoustiques. L'objectif principal est l'amelioration de la reproduction de champs acoustiques par "synthese de champs acoustiques" ("Wave Field Synthesis", WFS), une approche connue, basee sur des hypotheses de champ libre, a l'aide du controle actif par l'ajout de capteurs de l'erreur de reproduction et d'une boucle fermee. Un premier chapitre technique (chapitre 4) expose les resultats d'appreciation objective de la WFS par simulations et mesures experimentales. L'effet indesirable de la salle de reproduction sur les qualites objectives de la WFS fut illustre. Une premiere question de recherche fut ensuite abordee (chapitre 5), a savoir s'il est possible de reproduire des champs progressifs en salle dans un paradigme physique de controle actif: cette possibilite fut prouvee. L'approche technique privilegiee, "synthese de champs adaptative" ("Adaptive Wave Field Synthesis" [AWFS]), fut definie, puis simulee (chapitre 6). Cette approche d'AWFS comporte une originalite en controle actif et en reproduction de champs acoustiques: la fonction cout quadratique representant la minimisation des erreurs de reproduction inclut une regularisation de Tikhonov avec solution a priori qui vient de la WFS. L'etude de l'AWFS a l'aide de la decomposition en valeurs singulieres (chapitre 7) a permis de comprendre les mecanismes propres a l'AWFS. C'est la deuxieme principale originalite de la these. L'algorithme FXLMS (LMS et reference filtree) est modifie pour l'AWFS (chapitre 8). Le decouplage du systeme par decomposition en valeurs singulieres est illustre dans le domaine du traitement de signal et l'AWFS basee sur le controle independant des modes de rayonnement est simulee (chapitre 8). Ce qui constitue la troisieme originalite principale de cette these. Ces simulations du traitement de signal

  8. FUNCTIONAL POLYHYDROXYALKANOATES SYNTHESIZED BY MICROORGANISMS

    Institute of Scientific and Technical Information of China (English)

    Guo-qiang Chen; Qiong Wu; Kai Zhao; Peter H.Yu

    2000-01-01

    Many bacteria have been found to synthesize a family of polyesters termed polyhydroxyalkanoate, abbreviated as PHA. Some interesting physical properties of PHAs such as piezoelectricity, non-linear optical activity, biocompatibility and biodegradability offer promising applications in areas such as degradable packaging, tissue engineering and drug delivery.Over 90 PHAs with various structure variations have been reported and the number is still increasing. The mechanical property of PHAs changes from brittle to flexible to elastic, depending on the side-chainlength of PHA. Many attempts have been made to produce PHAs as biodegradable plastics using various microorganisms obtained from screening natural environments, genetic engineering and mutation. Due to the high production cost, PHAs still can not compete with the nondegradable plastics, such as polyethylene and polypropylene. Various processes have been developed using low cost raw materials for fermentation and an inorganic extraction process for PHA purification. However, a super PHA production strain may play the most critical role for any large-scale PHA production. Our recent study showed that PHA synthesis is a common phenomenon among bacteria inhabiting various locations, especially oil-contaminated soils. This is very important for finding a suitable bacterial strain for PHA production. In fact, PHA production strains capable of rapid growth and rapid PHA synthesis on cheap molasses substrate have been found on molasses contaminated soils. A combination of novel properties and lower cost will allow easier commercialization of PHA for many applications.

  9. Carrier Bulk-Lifetime Measurements

    Directory of Open Access Journals (Sweden)

    M. Solcansky

    2012-01-01

    Full Text Available For the measurement of the minority carrier bulk-lifetime the characterization method MW-PCD is used, where the result of measurement is the effective carrier lifetime, which is very dependent on the surface recombination velocity and therefore on the quality of a silicon surface passivation. This work deals with an examination of a different solution types for the chemical passivation of a silicon surface. Various solutions are tested on silicon wafers for their consequent comparison. The main purpose is to find optimal solution, which suits the requirements of a time stability and start-up velocity of passivation, reproducibility of the measurements and a possibility of a perfect cleaning of a passivating solution remains from a silicon surface, so that the parameters of a measured silicon wafer will not worsen and there will not be any contamination of the other wafers series in the production after a repetitive return of the measured wafer into the production process. The cleaning process itself is also a subject of a development.

  10. Coupling brane fields to bulk supergravity

    Energy Technology Data Exchange (ETDEWEB)

    Parameswaran, Susha L. [Uppsala Univ. (Sweden). Theoretical Physics; Schmidt, Jonas [Deutsches Elektronen-Synchrotron (DESY), Hamburg (Germany)

    2010-12-15

    In this note we present a simple, general prescription for coupling brane localized fields to bulk supergravity. We illustrate the procedure by considering 6D N=2 bulk supergravity on a 2D orbifold, with brane fields localized at the fixed points. The resulting action enjoys the full 6D N=2 symmetries in the bulk, and those of 4D N=1 supergravity at the brane positions. (orig.)

  11. Relative entropy equals bulk relative entropy

    CERN Document Server

    Jafferis, Daniel L; Maldacena, Juan; Suh, S Josephine

    2015-01-01

    We consider the gravity dual of the modular Hamiltonian associated to a general subregion of a boundary theory. We use it to argue that the relative entropy of nearby states is given by the relative entropy in the bulk, to leading order in the bulk gravitational coupling. We also argue that the boundary modular flow is dual to the bulk modular flow in the entanglement wedge, with implications for entanglement wedge reconstruction.

  12. 33 CFR 127.313 - Bulk storage.

    Science.gov (United States)

    2010-07-01

    ...) WATERFRONT FACILITIES WATERFRONT FACILITIES HANDLING LIQUEFIED NATURAL GAS AND LIQUEFIED HAZARDOUS GAS Waterfront Facilities Handling Liquefied Natural Gas Operations § 127.313 Bulk storage. (a) The...

  13. Applications of bulk high-temperature superconductors

    Science.gov (United States)

    Hull, J. R.

    The development of high-temperature superconductors (HTS's) can be broadly generalized into thin-film electronics, wire applications, and bulk applications. We consider bulk HTS's to include sintered or crystallized forms that do not take the geometry of filaments or tapes, and we discuss major applications for these materials. For the most part applications may be realized with the HTS's cooled to 77 K, and the properties of the bulk HTS's are often already sufficient for commercial use. A non-exhaustive list of applications for bulk HTS's includes trapped field magnets, hysteresis motors, magnetic shielding, current leads, and magnetic bearings. These applications are briefly discussed in this paper.

  14. Hyperon bulk viscosity in strong magnetic fields

    CERN Document Server

    Sinha, Monika

    2008-01-01

    We study bulk viscosity in neutron star matter including $\\Lambda$ hyperons in the presence of quantizing magnetic fields. Relaxation time and bulk viscosity due to both the non-leptonic weak process involving $\\Lambda$ hyperons and the direct Urca (dUrca) process are calculated here. In the presence of a strong magnetic field, bulk viscosity coefficients are enhanced when protons, electrons and muons are populated in their respective zeroth Landau levels compared with the field free cases. The enhancement of bulk viscosity coefficient is larger for the dUrca case.

  15. Bulk Combinatorial Synthesis and High Throughput Characterization for Rapid Assessment of Magnetic Materials: Application of Laser Engineered Net Shaping (LENS™)

    Science.gov (United States)

    Geng, J.; Nlebedim, I. C.; Besser, M. F.; Simsek, E.; Ott, R. T.

    2016-07-01

    A bulk combinatorial approach for synthesizing alloy libraries using laser engineered net shaping (LENS™; i.e., 3D printing) was utilized to rapidly assess material systems for magnetic applications. The LENS™ system feeds powders in different ratios into a melt pool created by a laser to synthesize samples with bulk (millimeters) dimensions. By analyzing these libraries with autosampler differential scanning calorimeter/thermal gravimetric analysis and vibrating sample magnetometry, we are able to rapidly characterize the thermodynamic and magnetic properties of the libraries. The Fe-Co binary alloy was used as a model system and the results were compared with data in the literature.

  16. Closed-ampoule diffusion of sulfur into Cd-doped InP substrates - Dependence of S profiles on diffusion temperature and time

    Science.gov (United States)

    Faur, Mircea; Faur, Maria; Honecy, Frank; Goradia, Chandra; Goradia, Manju; Jayne, Douglas; Clark, Ralph

    1992-01-01

    In order to optimize the fabrication of n(+)-p InP solar cells made by closed-ampoule diffusion of sulfur into p-InP:Cd substrates, we have investigated the influence of diffusion conditions on sulfur diffusion profiles. We show that S diffusion in InP is dominated by the P vacancy mechanism and is not characterized by a complementary error function as expected for an infinite source diffusion. The S diffusion mechanism in p-InP is qualitatively explained by examining the depth profiles of S, P, and In in the emitter layer and by taking into account the presence and composition of different compounds found to form in the In-P-S-O-Cd system as a result of diffusion.

  17. Multiple-Scattering of Near-Edge x-ray Absorption Fine Structure of Sulphur-Passivated InP(100) Surface

    Institute of Scientific and Technical Information of China (English)

    曹松; 唐景昌; 沈少来; 陈更生; 马丹

    2003-01-01

    We use the multiple-scattering cluster method to calculate the sulphur 1s near-edge x-ray absorption fine structure (NEXAFS) of S-passivated InP(100) surface. The physical origins of the resonances in the NEXAFS have been unveiled. It is shown that the most important resonance is attributed to the photoelectron scattering between the central sulphur and the nearest indium atoms. The studies show that two S-S dimers with the bond lengths of 2.05 A and 3.05 A coexist in the surface, meanwhile the bridge and antibridge site adsorption of single S could not be ruled out. We support the scanning tunnelling microscopy result that the S-passivated InP(100) surface exhibits significant disorder.

  18. Photoluminescence and photocurrent from InP nanowires with InAsP quantum dots grown on Si by molecular beam epitaxy.

    Science.gov (United States)

    Kuyanov, P; LaPierre, R R

    2015-08-07

    InP nanowires with InAsP quantum dots (QDs) were grown by molecular beam epitaxy on a Si (111) substrates. The structure of the InAsP QDs were studied using transmission electron microscopy, allowing the development of a model where QD growth occurs by group V desorption from the surrounding substrate surface. Micro-photoluminescence was performed at 10 K showing emission at 1.47-1.49 eV from the InP wurtzite structure, and various emission peaks between 0.93 and 1.33 eV attributed to the QDs. The emission was tuned by the QD composition. The effectiveness of an AlInP passivation shell was demonstrated via an improvement in the photoluminescence intensity. Spectrally-resolved photocurrent measurements at room temperature demonstrated infrared response due to absorption within the QDs. The absorption red-shifted with increasing As composition of the QD.

  19. Ab initio calculations of polarization, piezoelectric constants, and elastic constants of InAs and InP in the wurtzite phase

    Energy Technology Data Exchange (ETDEWEB)

    Hajlaoui, C., E-mail: hajlaouic@yahoo.fr; Pedesseau, L. [Université Européenne de Bretagne (France); Raouafi, F.; Ben Cheikh Larbi, F. [Université de Carthage, Laboratoire de Physico-Chimie, des Microstructures et des Microsystémes, Institut Préparatoire aux Études Scientifiques et Techniques (Tunisia); Even, J.; Jancu, J.-M. [Université Européenne de Bretagne (France)

    2015-08-15

    We report first-principle density functional calculations of the spontaneous polarization, piezoelectric stress constants, and elastic constants for the III–V wurtzite structure semiconductors InAs and InP. Using the density functional theory implemented in the VASP code, we obtain polarization values–0.011 and–0.013 C/m{sup 2}, and piezoelectric constants e{sub 33} (e{sub 31}) equal to 0.091 (–0.026) and 0.012 (–0.081) C/m{sup 2} for structurally relaxed InP and InAs respectively. These values are consistently smaller than those of nitrides. Therefore, we predict a smaller built-in electric field in such structures.

  20. Type-II InP quantum dots in wide-bandgap InGaP host for intermediate-band solar cells

    Science.gov (United States)

    Tayagaki, Takeshi; Sugaya, Takeyoshi

    2016-04-01

    We demonstrate type-II quantum dots (QDs) with long carrier lifetimes in a wide-bandgap host as a promising candidate for intermediate-band solar cells. Type-II InP QDs are fabricated in a wide-bandgap InGaP host using molecular beam epitaxy. Time-resolved photoluminescence measurements reveal an extremely long carrier lifetime (i.e., greater than 30 ns). In addition, from temperature-dependent PL spectra, we find that the type-II InP QDs form a negligible valence band offset and conduction band offset of ΔEc ≈ 0.35 eV in the InGaP host. Such a type-II confinement potential for InP/InGaP QDs has a significant advantage for realizing efficient two-step photon absorption and suppressed carrier capture in QDs via Auger relaxation.

  1. Stability Test of White LED with Bilayer Structure of Red InP Quantum Dots and Yellow YAG:Ce3+ Phosphor.

    Science.gov (United States)

    Park, Kwangwon; Deressa, Gemechu; Kim, Daehan; Kim, Jongsu; Kim, Jihoon; Kim, Taehoon

    2016-02-01

    The white-light-emitting diode (white LED), based on the bilayer structure of red InP quantum dots (QDs) with 610 nm peak, and yellow YAG:Ce3+ phosphor with 550 nm peak, were fabricated through a conventional 5050 type LED fabrication process. The white LED exhibited high luminous efficiency of >130 Im/W and high color rendering index of >80 under operating current of 60 mA and color temperature of 5800 K. As an increase of QDs concentrations, the white LED showed higher color rendering index along with lower luminous efficiency, and the energy loss in the reabsorption process between yellow YAG:Ce3+ emission and red QD absorption was observed. As the temperature increases, the x-color coordinates were significantly changed, indicating that the InP QDs still have lower thermal stability. Also our white LED showed about 50% lumen maintenance after 45,000 hours of normal operation.

  2. Prediction of phonon thermal transport in thin GaAs, InAs and InP nanowires by molecular dynamics simulations: influence of the interatomic potential.

    Science.gov (United States)

    Carrete, J; Longo, R C; Gallego, L J

    2011-05-06

    A number of different potentials are currently being used in molecular dynamics simulations of semiconductor nanostructures. Confusion can arise if an inappropriate potential is used. To illustrate this point, we performed direct molecular dynamics simulations to predict the room temperature lattice thermal conductivity λ of thin GaAs, InAs and InP nanowires. In each case, simulations performed using the classical Harrison potential afforded values of λ about an order of magnitude smaller than those obtained using more elaborate potentials (an Abell-Tersoff, as parameterized by Hammerschmidt et al for GaAs and InAs, and a potential of Vashishta type for InP). These results will be a warning to those wishing to use computer simulations to orient the development of quasi-one-dimensional systems as heat sinks or thermoelectric devices.

  3. Prediction of phonon thermal transport in thin GaAs, InAs and InP nanowires by molecular dynamics simulations: influence of the interatomic potential

    Energy Technology Data Exchange (ETDEWEB)

    Carrete, J; Longo, R C; Gallego, L J, E-mail: jesus.carrete@usc.es [Departamento de Fisica de la Materia Condensada, Facultad de Fisica, Universidad de Santiago de Compostela, E-15782 Santiago de Compostela (Spain)

    2011-05-06

    A number of different potentials are currently being used in molecular dynamics simulations of semiconductor nanostructures. Confusion can arise if an inappropriate potential is used. To illustrate this point, we performed direct molecular dynamics simulations to predict the room temperature lattice thermal conductivity {lambda} of thin GaAs, InAs and InP nanowires. In each case, simulations performed using the classical Harrison potential afforded values of {lambda} about an order of magnitude smaller than those obtained using more elaborate potentials (an Abell-Tersoff, as parameterized by Hammerschmidt et al for GaAs and InAs, and a potential of Vashishta type for InP). These results will be a warning to those wishing to use computer simulations to orient the development of quasi-one-dimensional systems as heat sinks or thermoelectric devices.

  4. The simulation of localized surface plasmon and surface plasmon polariton in wire grid polarizer integrated on InP substrate for InGaAs sensor

    Directory of Open Access Journals (Sweden)

    Rui Wang

    2015-07-01

    Full Text Available We numerically demonstrate the integration of gold wire grid polarizer on InP substrate for InGaAs polarimetric imaging. The effective spectral range of wire grid polarizer has been designed in 0.8-3 μm according to InGaAs response waveband. The dips in TM transmission are observed due to surface plasmon (SPs significantly damaging polarization performance. To further understand the coupling mechanism between gold wire grid grating and InP, the different contributions of surface plasmon polariton (SPP and localized surface plasmon (LSP to the dips are analyzed. Both transmission and reflectance spectra are simulated at different grating periods and duty cycles by finite-different time-domain (FDTD method. LSP wavelength is located at around 1 μm and sensitive to the specific shape of metal wire. SPP presents higher resonance wavelength closely related to grating period. The simulations of electric field distribution show the same results.

  5. The role of strain-driven in migration in the growth of self-assembled InAs quantum dots on InP

    CERN Document Server

    Yoon, S H; Lee, T W; Hwang, H D; Yoon, E J; Kim, Y D

    1999-01-01

    Self-assembled InAs quantum dots (SAQDs) were grown on InP by metalorganic chemical vapor deposition. The amount of excess InAs and the aspect ratio of the SAQD increased with temperature and V/III ratio. It is explained that the As/P exchange reaction at the surface played an important role in the kinetics of SAQD formation. Insertion of a lattice-matched InGaAs buffer layer suppressed the excess InAs formation, and lowered the aspect ratio. Moreover, the dots formed on InGaAs buffer layers were faceted, whereas those on InP were hemispherical, confirming the effect of the As/P exchange reaction. The shape of InAs quantum dots on InGaAs buffer layers was a truncated pyramid with four [136] facets and base edges parallel to directions.

  6. First-Principles Study of Structural, Electronic, Mechanical, Thermal, and Phonon Properties of III-Phosphides (BP, AlP, GaP, and InP)

    Science.gov (United States)

    Ehsanfar, S.; Kanjouri, F.; Tashakori, H.; Esmailian, A.

    2017-10-01

    Based on first-principles calculations with generalized gradient approximation as exchange-correlation functional, the structural, electronic, mechanical, thermal, and phonon properties of III-phosphide binary compounds, namely BP, AlP, GaP, and InP, with cubic zincblende structure have been investigated. The calculations were performed in the framework of density functional theory and density functional perturbation theory (DFPT) implemented in the Quantum ESPRESSO package. The results obtained for the structural and electronic properties are in good agreement with available theoretical and experimental results. The results of our electronic calculations indicate semiconducting properties for these binary compounds. Furthermore, the frequency bandgaps and phonon density of states were also investigated. The computed mechanical constants predict that BP, AlP, GaP, and InP are elastically stable. Finally, we determined the heat capacity and entropy for these binary compounds within a quasiharmonic Debye model using DFPT for comparison.

  7. FFT-impedance spectroscopy analysis of the growth of magnetic metal nanowires in ultra-high aspect ratio InP membranes

    Science.gov (United States)

    Gerngross, M.-D.; Carstensen, J.; Föll, H.; Adelung, R.

    2016-01-01

    This paper reports on the characterization of the electrochemical growth process of magnetic nanowires in ultra-high-aspect ratio InP membranes via in situ fast Fourier transform impedance spectroscopy in a typical frequency range from 75 Hz to 18.5 kHz. The measured impedance data from the Ni, Co, and FeCo can be very well fitted using the same electric equivalent circuit consisting of a series resistance in serial connection to an RC-element and a Maxwell element. The impedance data clearly indicate the similarities in the growth behavior of Ni, Co and FeCo nanowires in ultra-high aspect ratio InP membranes—the beneficial impact of boric acid on the metal deposition in ultra-high aspect ratio membranes and the diffusion limitation of boric acid, as well as differences such as passivation or side reactions.

  8. The infuence of different interfaces on electrical and optical characteristics of Te doped ALGaAsSB/ALAsSB Bragg Mirrors on InP

    Directory of Open Access Journals (Sweden)

    Jean C Harmand

    2008-08-01

    Full Text Available The electrical and optical properties of non-doped and Te doped 6.5 periods AlGaAsSb/AlAsSb Bragg mirrors on InP grown by MBE with different types of interfaces between ternary and quaternary layers are reported. The techniques employed were photoluminescence, refectivity and IxV measurements. The digital alloy gradient interface seems to be the best alternative to optimize conduction without significant refectivity losses.

  9. 27 CFR 20.191 - Bulk articles.

    Science.gov (United States)

    2010-04-01

    ... 27 Alcohol, Tobacco Products and Firearms 1 2010-04-01 2010-04-01 false Bulk articles. 20.191... Users of Specially Denatured Spirits Operations by Users § 20.191 Bulk articles. Users who convey articles in containers exceeding one gallon may provide the recipient with a photocopy of subpart G of...

  10. Fabrication of high-aspect-ratio double-slot photonic crystal waveguide in InP heterostructure by inductively coupled plasma etching using ultra-low pressure

    Directory of Open Access Journals (Sweden)

    Kaiyu Cui

    2013-02-01

    Full Text Available Double-slot photonic crystal waveguide (PCW in InP heterostructure is fabricated by inductively coupled plasma (ICP etching. Due to using an ultra-low pressure of 0.05 Pa, etch depths up to 3.5 μm for holes with diameter of 200 nm and 1.8 μm for slots of ∼40 nm are achieved, which indicate a record-high aspect-ratio, i.e. 45, for such narrow slots in InP heterostructure. Moreover, etching quality is evaluated based on both the transmission performance and the linewidth of micro-photoluminescence (μ-PL. In our measurement, a structure-dependent transmission-dip about 17 dB is obtained from a 17-μm-long W3 PCW, and a PL widening as small as 19 nm compared to the corresponding wafer is observed. These promising experimental results evidence the high etching quality realized in this work and confirm the feasibility of etching small-feature-size patterns by ICP technology for InP based devices in future mono-/hetero-integrated photonic circuits.

  11. Development of InP solid state detector and liquid scintillator containing metal complex for measurement of pp/7Be solar neutrinos and neutrinoless double beta decay

    Science.gov (United States)

    Fukuda, Yoshiyuki; Moriyama, Shigetaka

    2012-07-01

    A large volume solid state detector using a semi-insulating Indium Phosphide (InP) wafer have been developed for measurement of pp/7Be solar neutrinos. Basic performance such as the charge collection efficiency and the energy resolution were measured by 60% and 20%, respectively. In order to detect two gammas (115keV and 497keV) from neutrino capture, we have designed hybrid detector which consist InP detector and liquid xenon scintillator for IPNOS experiment. New InP detector with thin electrode (Cr 50Å- Au 50Å). For another possibility, an organic liquid scintillator containing indium complex and zirconium complex were studied for a measurement of low energy solar neutrinos and neutrinosless double beta decay, respectively. Benzonitrile was chosen as a solvent because of good solubility for the quinolinolato complexes (2 wt%) and of good light yield for the scintillation induced by gamma-ray irradiation. The photo-luminescence emission spectra of InQ3 and ZrQ4 in benzonitrile was measured and liquid scintillator cocktail using InQ3 and ZrQ4 (50mg) in benzonitrile solutions (20 mL) with secondary scintillators with PPO (100mg) and POPOP (10mg) was made. The energy spectra of incident gammas were measured, and they are first results of the gamma-ray energy spectra using luminescent of metal complexes.

  12. STUDIES ON OPTICAL MODULATION OF III-V GaN AND InP BASED DDR IMPATT DIODE AT SUB-MILLIMETER WAVE FREQUENCY

    Directory of Open Access Journals (Sweden)

    Soumen Banerjee,

    2010-07-01

    Full Text Available The effect of optically illumination of III-V compound semiconductor Indium Phosphide (InP and Wurtzite phase of Gallium Nitride (Wz-GaN or -GaN based Double Drift Impatt diodes at 300 GHz (0.3 THz has been investigated. The composition of photocurrent is altered by shining light on the p+ side and n+ side of the device through optical windows; thereby giving rise to Top Mounted (TM and Flip Chip (FC structures. The current multiplication factors for lectrons (Mn and for holes (Mp are altered to study the effect of leakage current in controlling the dynamic properties of the device. The conversion efficiency and output power of -GaN Impatt at 0.3 THz are 15.47% and 6.23 W respectively at an optimum bias current density of 0.5 x 108 A/m2 while the same parameters for InP Impatt are 18.38% and 2.81 W respectively at an optimum bias current density of 8.0 x 108 A/m2. Under optical illumination of the device, the frequency shift is observed to be more upwards upon lowering of Mpthan lowering of Mn. The frequency chirping in InP and -GaN Impatt are found to be of the order of few GHz, thereby indicating their high photo-sensitiveness at Sub-millimeter or Terahertz domain.

  13. Numerical study of sub-millimeter Gunn oscillations in InP and GaN vertical diodes: Dependence on bias, doping, and length

    Science.gov (United States)

    García, S.; Íñiguez-de-la-Torre, I.; Pérez, S.; Mateos, J.; González, T.

    2013-08-01

    In this work, we report on Monte Carlo simulations of InP and GaN vertical Gunn diodes to optimize their oscillation frequency and DC to AC conversion efficiency. We show that equivalent operating conditions are achieved by the direct application of a sinusoidal AC voltage superimposed to the DC bias and by the simulation of the intrinsic device coupled with the consistent solution of a parallel RLC resonant circuit connected in series. InP diodes with active region about 1 μm offer a conversion efficiency up to 5.5% for frequencies around 225 GHz. By virtue of the larger saturation velocity, for a given diode length, oscillation frequencies in GaN diodes are higher than for InP structures. Current oscillations at frequencies as high as 675 GHz, with 0.1% efficiency, are predicted at the sixth generation band in a 0.9 μm-long GaN diode, corroborating the suitability of GaN to operate near the THz band. At the first generation band, structures with notch, in general, provide lower oscillation frequencies and efficiencies in comparison with the same structures without notch. However, a higher number of generation bands are originated in notched diodes, thus, typically reaching larger frequencies. Self-heating effects reduce the performance, but in GaN diodes the efficiency is not significantly degraded.

  14. Electrochemical growth of Co nanowires in ultra-high aspect ratio InP membranes: FFT-impedance spectroscopy of the growth process and magnetic properties

    Science.gov (United States)

    2014-01-01

    The electrochemical growth of Co nanowires in ultra-high aspect ratio InP membranes has been investigated by fast Fourier transform-impedance spectroscopy (FFT-IS) in the frequency range from 75 Hz to 18.5 kHz. The impedance data could be fitted very well using an electric circuit equivalent model with a series resistance connected in series to a simple resistor-capacitor (RC) element and a Maxwell element. Based on the impedance data, the Co deposition in ultra-high aspect ratio InP membranes can be divided into two different Co deposition processes. The corresponding share of each process on the overall Co deposition can be determined directly from the transfer resistances of the two processes. The impedance data clearly show the beneficial impact of boric acid on the Co deposition and also indicate a diffusion limitation of boric acid in ultra-high aspect ratio InP membranes. The grown Co nanowires are polycrystalline with a very small grain size. They show a narrow hysteresis loop with a preferential orientation of the easy magnetization direction along the long nanowire axis due to the arising shape anisotropy of the Co nanowires. PMID:25050088

  15. Electrochemical growth of Co nanowires in ultra-high aspect ratio InP membranes: FFT-impedance spectroscopy of the growth process and magnetic properties

    Science.gov (United States)

    Gerngross, Mark-Daniel; Carstensen, Jürgen; Föll, Helmut

    2014-06-01

    The electrochemical growth of Co nanowires in ultra-high aspect ratio InP membranes has been investigated by fast Fourier transform-impedance spectroscopy (FFT-IS) in the frequency range from 75 Hz to 18.5 kHz. The impedance data could be fitted very well using an electric circuit equivalent model with a series resistance connected in series to a simple resistor-capacitor ( RC) element and a Maxwell element. Based on the impedance data, the Co deposition in ultra-high aspect ratio InP membranes can be divided into two different Co deposition processes. The corresponding share of each process on the overall Co deposition can be determined directly from the transfer resistances of the two processes. The impedance data clearly show the beneficial impact of boric acid on the Co deposition and also indicate a diffusion limitation of boric acid in ultra-high aspect ratio InP membranes. The grown Co nanowires are polycrystalline with a very small grain size. They show a narrow hysteresis loop with a preferential orientation of the easy magnetization direction along the long nanowire axis due to the arising shape anisotropy of the Co nanowires.

  16. Evaluating the Performance of the CPTEC-INPE/FCT-UNESP Troposphere Dynamic Model Using the VRS Concept

    Science.gov (United States)

    Alves, D. B.; Dalbelo, L. F.; Monico, J. F.; Sapucci, L. F.

    2007-05-01

    Nowadays, the use of Zenithal Tropospheric Delay (ZTD) prediction from Numeric Weather Prediction (NWP) models is a good alternative to minimize the effects of the troposphere in the radio frequency signs for real time and/or pos-processed applications. This process is denominated here after ZTD dynamic modeling. In Brazil, the procedure used to compute the ZTD by the NWP model was jointly developed by researchers from UNESP (São Paulo State University) and CPTEC (Center for Weather Forecasting and Climate Studies) of the INPE (National Institute for Space Research). The ZTD values are provided for all South America twice a day with predictions for a period of 66 hours. The database and the quality analysis are available by CPTEC-INPE in http:satelite.cptec.inpe.br/htmldocs/ztd/zenital.htm. In order to test the performance of the ZTD dynamic modeling in positioning applications, some experiments were carried out. Besides, the results obtained with dynamic modeling were compared with those obtained by Hopfield empirical model. These two tropospheric models were used to generate a VRS (Virtual Reference Station). In the VRS concept developed in this research, a reference station is generated near the user using data provided by a reference network station and atmospheric models. Therefore, the VRS data are not provided by a real receiver. But, the idea is that the VRS data resemble as much as possible a real receiver data at the same location. Therefore, the user has the possibility of using the VRS as if it were a real reference station in your proximities, and to accomplish the relative positioning with a single frequency receiver. This method was implemented in an software which has been developed at UNESP. In order to test the discussed method it was accomplished two experiments using data from two different networks: (a) Brazilian Continuous GPS Network (RBMC) and some extra stations; (b) GPS Active Network of West of São Paulo State. Using the first network

  17. Bulk equations of motion from CFT correlators

    CERN Document Server

    Kabat, Daniel

    2015-01-01

    To O(1/N) we derive, purely from CFT data, the bulk equations of motion for interacting scalar fields and for scalars coupled to gauge fields and gravity. We first uplift CFT operators to mimic local AdS fields by imposing bulk microcausality. This requires adding an infinite tower of smeared higher-dimension double-trace operators to the CFT definition of a bulk field, with coefficients that we explicitly compute. By summing the contribution of the higher-dimension operators we derive the equations of motion satisfied by these uplifted CFT operators and show that we precisely recover the expected bulk equations of motion. We exhibit the freedom in the CFT construction which corresponds to bulk field redefinitions.

  18. Bulk equations of motion from CFT correlators

    Energy Technology Data Exchange (ETDEWEB)

    Kabat, Daniel [Department of Physics and Astronomy,Lehman College, City University of New York, Bronx NY 10468 (United States); Lifschytz, Gilad [Department of Physics and Astronomy,Lehman College, City University of New York, Bronx NY 10468 (United States); Physics Department,City College, City University of New York, New York NY 10031 (United States); Department of Mathematics and Physics,University of Haifa at Oranim, Kiryat Tivon 36006 (Israel)

    2015-09-10

    To O(1/N) we derive, purely from CFT data, the bulk equations of motion for interacting scalar fields and for scalars coupled to gauge fields and gravity. We first uplift CFT operators to mimic local AdS fields by imposing bulk microcausality. This requires adding an infinite tower of smeared higher-dimension double-trace operators to the CFT definition of a bulk field, with coefficients that we explicitly compute. By summing the contribution of the higher-dimension operators we derive the equations of motion satisfied by these uplifted CFT operators and show that we precisely recover the expected bulk equations of motion. We exhibit the freedom in the CFT construction which corresponds to bulk field redefinitions.

  19. A novel mechanical cleavage method for synthesizing few-layer graphenes

    Directory of Open Access Journals (Sweden)

    Jayasena Buddhika

    2011-01-01

    Full Text Available Abstract A novel method to synthesize few layer graphene from bulk graphite by mechanical cleavage is presented here. The method involves the use of an ultrasharp single crystal diamond wedge to cleave a highly ordered pyrolytic graphite sample to generate the graphene layers. Cleaving is aided by the use of ultrasonic oscillations along the wedge. Characterization of the obtained layers shows that the process is able to synthesize graphene layers with an area of a few micrometers. Application of oscillation enhances the quality of the layers produced with the layers having a reduced crystallite size as determined from the Raman spectrum. Interesting edge structures are observed that needs further investigation.

  20. Ultrafast Carrier Dynamics Measured by the Transient Change in the Reflectance of InP and GaAs Film

    Energy Technology Data Exchange (ETDEWEB)

    Klopf, John [Helmholtz Association of German Research Centers, Dresden (Germany)

    2005-10-31

    Advancements in microfabrication techniques and thin film growth have led to complex integrated photonic devices, also known as optoelectronics. The performance of these devices relies upon precise control of the band gap and optical characteristics of the thin film structures, as well as a fundamental understanding of the photoexcited carrier thermalization, relaxation, and recombination processes. An optical pump-probe technique has been developed to measure the transient behavior of these processes on a sub-picosecond timescale. This method relies upon the generation of hot carriers by theabsorption of an intense ultrashort laser pulse (~ 135 fs). The transient changes in reflectance due to the pump pulse excitation are monitored using a weaker probe pulse. Control of the relative time delay between the pump and probe pulses allows for temporal measurements with resolution limited only by the pulse width. The transient change in reflectance is the result of a transient change in the carrier distribution. Observation of the reflectance response of indium phosphide (InP) and gallium arsenide (GaAs) films on a sub-picosecond timescale allows for detailed examination of thermalization and relaxation processes of the excited carriers. Longer timescales (> 100 ps) are useful for correlating the transient reflectance response to slower processes such as the diffusion and recombination of the photoexcited carriers. This research investigates the transient hot carrier processes in several InP and GaAs based films similar to those commonly used in optoelectronics. This technique is especially important as it provides a non-destructive means of evaluating these materials; whereas much of the research performed in this field has relied upon the measurement of transient changes in the transmission of transparent films. The process of preparing films that are transparent renders them unusable in functioning devices. This research should not only extend the understanding of

  1. Contribuição de diversos sistemas de observação na previsão de tempo no CPTEC/INPE Contribution of the several observation systems in the forecast skill at CPTEC/INPE

    Directory of Open Access Journals (Sweden)

    Rita V. Andreoli

    2008-06-01

    Full Text Available Experimentos utilizando sistemas de observação global, foram realizados excluindo um ou mais tipos de observação do esquema global de assimilação de dados/previsão de tempo do Centro de Previsão de Tempo e Estudos Climáticos do Instituto Nacional de Pesquisas Espaciais - CPTEC/INPE (Global Physical-space Statistical Analysis System - GPSAS. Estes experimentos indicam como efetivamente as observações são usadas no GPSAS. Os sistemas de observação testados foram o conjunto de dados convencionais, que incluem informações de superfície (estações em superfície, bóias, navios e plataformas oceânicas e de ar superior (radiossondagem, aeronaves e balões piloto, os sistemas de sondagem Advanced TIROS-N/NOAA Operational Vertical Sounder (ATOVS e AQUA, composto pelos sensores Atmospheric Infrared Sounder e Advanced Microwave Sounding Unit (AIRS/AMSU, dados de vento de satélite, estimados a partir do deslocamento de nuvens (Cloud Track Wind, dados de vento em superfície sobre o oceano (QuikScat e água precipitável (Total Precipitation water - TPW. Todos os sistemas testados mostram um impacto positivo na qualidade da previsão. Os dados convencionais têm um maior impacto na região do Hemisfério Norte devido à maior disponibilidade dessas informações sobre esta região. Por outro lado, as sondagens AIRS/AMSU são fundamentais para uma boa previsão sobre o Hemisfério Sul. Sobre a América do Sul, os perfis inferidos pelo sistema de sondagem AQUA contribuem com a mesma ordem de grandeza dos dados convencionais e apresentam um impacto positivo para todos os períodos de previsões analisados. Dados de vento e água precipitável estimados por satélites têm maior impacto nas regiões tropical e da América do Sul, nas primeiras horas de previsão (1-3 dias. Todavia, a utilização de um conjunto completo de observações é crucial para se obter, operacionalmente, uma boa condição inicial do estado atmosférico para ser

  2. Effect of defects due to lattice mismatch between GaAs and InP materials on gate-leakage current and microwave noise of GaAs MESFETS on InP substrates

    Science.gov (United States)

    Chertouk, Mourad; Boudiaf, A.; Azoulay, Rozette; Clei, A.

    1993-11-01

    The effect of traps due to lattice mismatch between GaAs and InP materials on the reverse current of Schottky diodes is demonstrated by the temperature dependence of the current, which exhibits a S.R.H. component at low reverse bias (also present in GaAs/GaAs with activation energy 0.125 eV) and a trap assisted tunneling one at high reverse bias (not observed in GaAs/GaAs). A model is developed which takes into account the temperature and channel doping level dependence. Application of this model to 0.25 micrometers gate GaAs MESFETs gives a good agreement with gate leakage current behavior as a function of drain and gate bias, for 6 X 1017 cm-3 and 1018 cm-3 channel doping. The excess gate-drain assisted tunneling current in 1018 cm-3 doped channel does not affect the MESFETs dc and microwave performances. However, the microwave noise (Fmin) is increased.

  3. Simple and facile approach to synthesize magnetite nanoparticles and assessment of their effects on blood cells

    Energy Technology Data Exchange (ETDEWEB)

    Cotica, Luiz F., E-mail: lfcotica@pq.cnpq.br [Department of Physics, Universidade Estadual de Maringa, Maringa, PR 87020900 (Brazil); Freitas, Valdirlei F.; Dias, Gustavo S.; Santos, Ivair A. [Department of Physics, Universidade Estadual de Maringa, Maringa, PR 87020900 (Brazil); Vendrame, Sheila C.; Khalil, Najeh M.; Mainardes, Rubiana M. [Department of Pharmacy, Universidade Estadual do Centro-Oeste, Guarapuava, PR 85040080 (Brazil); Staruch, Margo; Jain, Menka [Department of Physics, University of Connecticut, Storrs, CT 06269 (United States)

    2012-02-15

    In this paper, a very simple and facile approach for the large scale synthesis of uniform and size-controllable single-domain magnetite nanoparticles is reported. These magnetite nanoparticles were synthesized via thermal decomposition of a ferric nitrate/ethylene glycol solution. The structural and morphological properties of the synthesized nanoparticles were carefully studied. Nearly spherical nanoparticles with inverted spinel structure and average particle and crystallite sizes smaller than 20 nm were obtained. The magnetic measurements revealed that magnetite nanoparticles have a magnetic saturation value near that of the bulk magnetite. The erythrocyte cytotoxicity assays showed no hemolytic potential of the samples containing magnetite nanoparticles, indicating no cytotoxic activity on human erythrocytes, which makes these interesting for biotechnological applications. - Highlights: > Simple and facile approach to large scale synthesis of magnetite nanoparticles. > Erythrocyte cytotoxicity assays showed no hemolytic potential of nanoparticles. > Saturation magnetization of nanoparticles reached near that of the bulk magnetite.

  4. Synthesizing Regression Results: A Factored Likelihood Method

    Science.gov (United States)

    Wu, Meng-Jia; Becker, Betsy Jane

    2013-01-01

    Regression methods are widely used by researchers in many fields, yet methods for synthesizing regression results are scarce. This study proposes using a factored likelihood method, originally developed to handle missing data, to appropriately synthesize regression models involving different predictors. This method uses the correlations reported…

  5. 52-GHz Millimetre-Wave PLL Synthesizer

    OpenAIRE

    Lee, Ja-Yol; Yu, Hyun-Kyu

    2010-01-01

    In this chapter, we design and fabricate a 52GHz frequency synthesizer for 60GHz dualconversion receiver using SiGe BiCMOS process technology. The designed PLL-based frequency synthesizer consists of a 26-GHz PLL and a 52-GHz frequency doubler. In the

  6. A Novel Route of Furan Compounds Syntheses

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    A series of compounds that contained furan skeletons were synthesized using 3,4-bis(trimethylsilyl)furan as staring material. 1H NMR, 13C NMR, MS and EA had identified these new molecules. The important factors that influenced reactions were discussed, and the new furan intermediates could be used in various organic syntheses.

  7. "Comments on Slavin": Synthesizing Causal Inferences

    Science.gov (United States)

    Briggs, Derek C.

    2008-01-01

    When causal inferences are to be synthesized across multiple studies, efforts to establish the magnitude of a causal effect should be balanced by an effort to evaluate the generalizability of the effect. The evaluation of generalizability depends on two factors that are given little attention in current syntheses: construct validity and external…

  8. Composites comprising biologically-synthesized nanomaterials

    Science.gov (United States)

    Curran, Seamus; Dias, Sampath; Blau, Werner; Wang, Jun; Oremland, Ronald S; Baesman, Shaun

    2013-04-30

    The present disclosure describes composite materials containing a polymer material and a nanoscale material dispersed in the polymer material. The nanoscale materials may be biologically synthesized, such as tellurium nanorods synthesized by Bacillus selenitireducens. Composite materials of the present disclosure may have optical limiting properties and find use in optical limiting devices.

  9. Holographic representation of local bulk operators

    CERN Document Server

    Hamilton, A; Lifschytz, G; Lowe, D A; Hamilton, Alex; Kabat, Daniel; Lifschytz, Gilad; Lowe, David A.

    2006-01-01

    The Lorentzian AdS/CFT correspondence implies a map between local operators in supergravity and non-local operators in the CFT. By explicit computation we construct CFT operators which are dual to local bulk fields in the semiclassical limit. The computation is done for general dimension in global, Poincare and Rindler coordinates. We find that the CFT operators can be taken to have compact support in a region of the complexified boundary whose size is set by the bulk radial position. We show that at finite N the number of independent commuting operators localized within a bulk volume saturates the holographic bound.

  10. Impacto da utilização de previsões "defasadas" no sistema de previsão de tempo por conjunto do CPTEC/INPE The impact of using lagged forecasts on the CPTEC/INPE ensemble prediction system

    Directory of Open Access Journals (Sweden)

    Lúcia Helena Ribas Machado

    2010-03-01

    Full Text Available Neste trabalho é descrita a aplicação da técnica de previsões defasadas no sistema de previsão de tempo por conjuntos do Centro de Previsão de Tempo e Estudos Climáticos (EPS-CPTEC/INPE. Os dados do CPTEC/INPE consistem em uma amostra de dois meses com previsões de 15 dias para as variáveis: altura geopotencial em 500 hPa, temperatura do ar no nível de 850 hPa, e pressão atmosférica ao nível médio do mar. O estudo consiste em investigar: 1 o desempenho do EPS-CPTEC/INPE utilizando a técnica de previsões defasadas comparado àquele do conjunto operacional; 2 a relação entre o espalhamento e o desempenho da previsão, a fim de avaliar o uso da dispersão como preditor do desempenho. Os resultados indicam que a utilização de previsões defasadas em 12h, melhora o desempenho do conjunto operacional, contribuindo para aumentar o espalhamento do conjunto e, conseqüentemente, reduzir a sub-dispersão do sistema. Também foi observado que o conjunto defasado tem desempenho comparável àquele do conjunto operacional e que há uma tendência de desempenho alto quando o espalhamento é baixo, para os prazos de 5 e 7 dias de previsão. Estes resultados servem como base para a implementação operacional desta técnica, que apresenta baixo custo computacional, e contribui para a utilização mais eficiente das previsões por conjunto do CPTEC/INPE.In this work we report the application of the lagged average forecasting technique to CPTEC/INPE ensemble forecast. The CPTEC/INPE data consist of two months samples of 15 days forecast for the variables: geopotential height at 500 hPa, air temperature at 850 hPa and mean sea level atmospheric pressure. We focus on the following: 1 Does the lagged averaged ensemble forecast improve forecast skill compared to the CPTEC/INPE operational ensemble? 2 Is the dispersion of the ensemble useful in predicting forecast skill? The results indicate that the utilization of 12h-lagged average forecasts

  11. Efficient Coupling of an Antenna-Enhanced nanoLED into an Integrated InP Waveguide.

    Science.gov (United States)

    Eggleston, Michael S; Wu, Ming C

    2015-05-13

    Increasing power consumption in traditional on-chip metal interconnects has made optical links an attractive alternative. However, such a link is currently missing a fast, efficient, nanoscale light-source. Coupling nanoscale optical emitters to optical antennas has been shown to greatly increase their spontaneous emission rate and efficiency. Such a structure would be an ideal emitter for an on-chip optical link. However, there has never been a demonstration of an antenna-enhanced emitter coupled to a low-loss integrated waveguide. In this Letter we demonstrate an optical antenna-enhanced nanoLED coupled to an integrated InP waveguide. The nanoLEDs are comprised of a nanoridge of InGaAsP coupled to a gold antenna that exhibits a 36× enhanced rate of spontaneous emission. Coupling efficiencies as large as 70% are demonstrated into an integrated waveguide. Directional antennas also demonstrate direction emission down one direction of a waveguide with observed front-to-back ratios as high as 3:1.

  12. Defect-related luminescence in InAlAs on InP grown by molecular beam epitaxy

    Science.gov (United States)

    Gilinsky, A. M.; Dmitriev, D. V.; Toropov, A. I.; Zhuravlev, K. S.

    2017-09-01

    The photoluminescence (PL) of InAlAs grown on InP has been studied in a wide range of temperatures and excitation intensities. A novel emission ascribed to the presence of defects has been found by about 120-180 meV below the near band edge (NBE) line. The novel wide PL band is observed in the spectra only in a limited range of temperatures of 50-160 K, and is seen neither at liquid helium nor at room temperatures. The analysis of the PL behaviour with sample temperature and excitation power together with non-stationary PL kinetics allows us to conclude that both the NBE PL and the novel PL band are controlled by transitions via states of band tails formed due to alloy disorder in these films. The NBE PL is caused by recombination of carriers in the band tails, while deep levels related to defects and located in the same regions as the deepest band tail states are supposedly involved in the defect-related PL transitions. We demonstrate that no defect-related PL is found in the spectra if quasi-stoichiometric growth conditions were used during film growth, which resulted in a PL efficiency by about 1-2 orders of magnitude greater than that of samples grown under more common As-rich conditions.

  13. 93-133 GHz Band InP High-Electron-Mobility Transistor Amplifier with Gain-Enhanced Topology

    Science.gov (United States)

    Sato, Masaru; Shiba, Shoichi; Matsumura, Hiroshi; Takahashi, Tsuyoshi; Nakasha, Yasuhiro; Suzuki, Toshihide; Hara, Naoki

    2013-04-01

    In this study, we developed a new type of high-frequency amplifier topology using 75-nm-gate-length InP-based high-electron-mobility transistors (InP HEMTs). To enhance the gain for a wide frequency range, a common-source common-gate hybrid amplifier topology was proposed. A transformer-based balun placed at the input of the amplifier generates differential signals, which are fed to the gate and source terminals of the transistor. The amplified signal is outputted at the drain node. The simulation results show that the hybrid topology exhibits a higher gain from 90 to 140 GHz than that of the conventional common-source or common-gate amplifier. The two-stage amplifier fabricated using the topology exhibits a small signal gain of 12 dB and a 3-dB bandwidth of 40 GHz (93-133 GHz), which is the largest bandwidth and the second highest gain reported among those of published 120-GHz-band amplifiers. In addition, the measured noise figure was 5 dB from 90 to 100 GHz.

  14. 225-255-GHz InP DHBT Frequency Tripler MMIC Using Complementary Split-Ring Resonator

    Science.gov (United States)

    Li, Xiao; Zhang, Yong; Li, Oupeng; Sun, Yan; Lu, Haiyan; Cheng, Wei; Xu, Ruimin

    2016-10-01

    In this paper, a novel design of frequency tripler monolithic microwave integrated circuit (MMIC) using complementary split-ring resonator (CSRR) is proposed based on 0.5-μm InP DHBT process. The CSRR-loaded microstrip structure is integrated in the tripler as a part of impedance matching network to suppress the fundamental harmonic, and another frequency tripler based on conventional band-pass filter is presented for comparison. The frequency tripler based on CSRR-loaded microstrip generates an output power between -8 and -4 dBm from 228 to 255 GHz when the input power is 6 dBm. The suppression of fundamental harmonic is better than 20 dBc at 77-82 GHz input frequency within only 0.15 × 0.15 mm2 chip area of the CSRR structure on the ground layer. Compared with the frequency tripler based on band-pass filter, the tripler using CSRR-loaded microstrip obtains a similar suppression level of unwanted harmonics and higher conversion gain within a much smaller chip area. To our best knowledge, it is the first time that CSRR is used for harmonic suppression of frequency multiplier at such high frequency band.

  15. Surface chemistry of InP ridge structures etched in Cl{sub 2}-based plasma analyzed with angular XPS

    Energy Technology Data Exchange (ETDEWEB)

    Bouchoule, Sophie, E-mail: sophie.bouchoule@lpn.cnrs.fr; Cambril, Edmond; Guilet, Stephane [Laboratoire de Photonique et Nanostructure (LPN)—UPR20, CNRS, Route de Nozay, 91460 Marcoussis (France); Chanson, Romain; Pageau, Arnaud; Rhallabi, Ahmed; Cardinaud, Christophe, E-mail: christophe.cardinaud@cnrs-imn.fr [Institut des matériaux Jean Rouxel (IMN), UMR6502, Université de Nantes, CNRS, 44322 Nantes (France)

    2015-09-15

    Two x-ray photoelectron spectroscopy configurations are proposed to analyze the surface chemistry of micron-scale InP ridge structures etched in chlorine-based inductively coupled plasma (ICP). Either a classical or a grazing configuration allows to retrieve information about the surface chemistry of the bottom surface and sidewalls of the etched features. The procedure is used to study the stoichiometry of the etched surface as a function of ridge aspect ratio for Cl{sub 2}/Ar and Cl{sub 2}/H{sub 2} plasma chemistries. The results show that the bottom surface and the etched sidewalls are P-rich, and indicate that the P-enrichment mechanism is rather chemically driven. Results also evidence that adding H{sub 2} to Cl{sub 2} does not necessarily leads to a more balanced surface stoichiometry. This is in contrast with recent experimental results obtained with the HBr ICP chemistry for which fairly stoichiometric surfaces have been obtained.

  16. Investigation of chlorine-based etchants in wet and dry etching technology for an InP planar Gunn diode

    Science.gov (United States)

    Bai, Yang; Jia, Rui; Wu, De-Qi; Jin, Zhi; Liu, Xin-Yu; Lin, Mei-Yu

    2013-08-01

    Mesa etching technology is considerably important in the Gunn diode fabrication process. In this paper we fabricate InP Gunn diodes with two different kinds of chlorine-based etchants for the mesa etching for comparative study. We use two chlorine-based etchants, one is HCl-based solution (HCl/H3PO4), and the other is Cl2-based gas mixture by utilizing inductively coupled plasma system (ICP). The results show that the wet etching (HCl-based) offers low cost and approximately vertical sidewall, whilst ICP system (Cl2-based) offers an excellent and uniform vertical sidewall, and the over-etching is tiny on the top and the bottom of mesa. And the fabricated mesas of Gunn diodes have average etching rates of ~ 0.6 μm/min and ~ 1.2 μm/min, respectively. The measured data show that the current of Gunn diode by wet etching is lower than that by ICP, and the former has a higher threshold voltage. It provides a low-cost and reliable method which is potentially applied to the fabrication of chip terahertz sources.

  17. Investigation of chlorine-based etchants in wet and dry etching technology for an InP planar Gunn diode

    Institute of Scientific and Technical Information of China (English)

    Bai Yang; Jia Rui; Wu De-Qi; Jin Zhi; Liu Xin-Yu; Lin Mei-Yu

    2013-01-01

    Mesa etching technology is considerably important in the Gunn diode fabrication process.In this paper we fabricate InP Gunn diodes with two different kinds of chlorine-based etchants for the mesa etching for comparative study.We use two chlorine-based etchants,one is HCl-based solution (HCl/H3PO4),and the other is Cl2-based gas mixture by utilizing inductively coupled plasma system (ICP).The results show that the wet etching (HCl-based) offers low cost and approximately vertical sidewall,whilst ICP system (Cl2-based) offers an excellent and uniform vertical sidewall,and the over-etching is tiny on the top and the bottom of mesa.And the fabricated mesas of Gunn diodes have average etching rates of ~ 0.6 μm/min and ~ 1.2 μm/min,respectively.The measured data show that the current of Gunn diode by wet etching is lower than that by ICP,and the former has a higher threshold voltage.It provides a low-cost and reliable method which is potentially applied to the fabrication of chip terahertz sources.

  18. 225-255-GHz InP DHBT Frequency Tripler MMIC Using Complementary Split-Ring Resonator

    Science.gov (United States)

    Li, Xiao; Zhang, Yong; Li, Oupeng; Sun, Yan; Lu, Haiyan; Cheng, Wei; Xu, Ruimin

    2017-02-01

    In this paper, a novel design of frequency tripler monolithic microwave integrated circuit (MMIC) using complementary split-ring resonator (CSRR) is proposed based on 0.5-μm InP DHBT process. The CSRR-loaded microstrip structure is integrated in the tripler as a part of impedance matching network to suppress the fundamental harmonic, and another frequency tripler based on conventional band-pass filter is presented for comparison. The frequency tripler based on CSRR-loaded microstrip generates an output power between -8 and -4 dBm from 228 to 255 GHz when the input power is 6 dBm. The suppression of fundamental harmonic is better than 20 dBc at 77-82 GHz input frequency within only 0.15 × 0.15 mm2 chip area of the CSRR structure on the ground layer. Compared with the frequency tripler based on band-pass filter, the tripler using CSRR-loaded microstrip obtains a similar suppression level of unwanted harmonics and higher conversion gain within a much smaller chip area. To our best knowledge, it is the first time that CSRR is used for harmonic suppression of frequency multiplier at such high frequency band.

  19. Balanced G-band Gm-boosted frequency doublers in transferred substrate InP HBT technology

    DEFF Research Database (Denmark)

    Johansen, Tom Keinicke; Thualfiqar, Al-Sawaf; Weimann, Nils

    2016-01-01

    In this paper, balanced G-band Gm-boosted frequency doublers in transferred substrate (TS) InP HBT technology are reported for the first time. The Gm-boosted frequency doublers consist of a phase compensated Marchand balun, Gm-boosted doubler stage, and an optional cascode gain stage at the output....... The doubler without cascode demonstrates a maximum output power of +4.7 dBm around a narrow frequency range at 200 GHz when driven with an input power of +10 dBm. A Gm-boosted frequency doubler with cascode demonstrates an output power of +5.4 dBm at 190 GHz when driven with an input power of +11 d......Bm. The power consumptions of the Gm-boosted frequency doubler without and with cascode are 30.9 mW and 56.4 mW, respectively. The fundamental suppression for both doublers remains better than 17.3 dB over an input frequency range of 75–110 GHz....

  20. Superconducting bulk magnets for magnetic levitation systems

    Science.gov (United States)

    Fujimoto, H.; Kamijo, H.

    2000-06-01

    The major applications of high-temperature superconductors have mostly been confined to products in the form of wires and thin films. However, recent developments show that rare-earth REBa 2Cu 3O 7- x and light rare-earth LREBa 2Cu 3O 7- x superconductors prepared by melt processes have a high critical-current density at 77 K and high magnetic fields. These superconductors will promote the application of bulk high-temperature superconductors in high magnetic fields; the superconducting bulk magnet for the Maglev train is one possible application. We investigated the possibility of using bulk magnets in the Maglev system, and examined flux-trapping characteristics of multi-superconducting bulks arranged in array.

  1. Measuring Bulk Flows in Large Scale Surveys

    CERN Document Server

    Feldman, H A; Feldman, Hume A.; Watkins, Richard

    1993-01-01

    We follow a formalism presented by Kaiser to calculate the variance of bulk flows in large scale surveys. We apply the formalism to a mock survey of Abell clusters \\'a la Lauer \\& Postman and find the variance in the expected bulk velocities in a universe with CDM, MDM and IRAS--QDOT power spectra. We calculate the velocity variance as a function of the 1--D velocity dispersion of the clusters and the size of the survey.

  2. The Bulk Multicore Architecture for Improved Programmability

    Science.gov (United States)

    2009-12-01

    algorithm, forcing the same order of chunk commits as in the recording step. This design, which we call PicoLog , typically incurs a performance cost... PicoLog . Data-race detection at production- run speed. The Bulk Multicore can support an efficient data-race detec- tor based on the “happens-before...Bulk Multicore (a), with a possible OrderOnly execution log (b) and PicoLog execution log (c). contributed articles DECEMBER 2009 | VOL. 52

  3. Optical and photocatalytic properties of indium phosphide nanoneedles and nanotubes

    DEFF Research Database (Denmark)

    Yu, Yanlong; Yu, Cuiyan; Xu, Tao

    2017-01-01

    , and Ultraviolet-visible (UV–vis) spectroscopy. The room temperature photoluminescence (PL) measurements showed that the InP nanoneedles and nanotubes possessed a pronounced blue shift in contrast to the bulk counterpart, which was ascribed to the crystalline defects effect. Moreover, the InP nanotubes exhibited......Large scale indium phosphide (InP) nanoneedles and nanotubes were synthesized through a facile solvothermal reaction. The morphology and microstructure of the samples were analyzed by employing scanning electron microscopy (SEM), transmission electron microscopy (TEM), Raman spectroscopy...

  4. Third-Order Nonlinear Optical Susceptibility of Indium Phosphide Nanocrystals

    Institute of Scientific and Technical Information of China (English)

    WANG Hong-Li; WANG Dong; CHEN Guang-De; LIU Hui

    2007-01-01

    InP nanocrystals synthesized by refluxing and annealing of organic solvent are determined from XRD measurements to have an average granularity of 25 nm. The nonlinear optical properties of the InP nanocrystals studied by using laser Z-scan technique with 50ps pulses at 532nm are found to reveal strong nonlinear optical properties and two-photon absorption phenomenon. Also, the nonlinear absorption coefficient, the nonlinear refractive index and the third-order nonlinear optical susceptibility are determined by experiments, in which the nonlinear refractive index is three orders of magnitude larger than that of bulk InP.

  5. Deuterium isotope effect on bulk heterojunction solar cells. Enhancement of organic photovoltaic performances using monobenzyl substituted deuteriofullerene acceptors.

    Science.gov (United States)

    Lu, Shirong; Jin, Tienan; Yasuda, Takeshi; Si, Weili; Oniwa, Kazuaki; Alamry, Khalid A; Kosa, Samia A; Asiri, Abdullah Mohamed; Han, Liyuan; Yamamoto, Yoshinori

    2013-11-15

    A series of novel monobenzyl-substituted deuteriofullerenes (BnDCs) were synthesized efficiently through Co-catalyzed selective monofunctionalization of C60. Bulk heterojunction solar cells, based on poly(3-hexylthiophene) as the donor and BnDCs as the acceptors, exhibited higher photovoltaic performances as compared to the corresponding protonated BnHCs devices.

  6. MICROWAVE-ASSISTED SHAPE CONTROLLED BULK SYNTHESIS OF AG AND FE NANORODS IN POLY (ETHYLENE GLYCOL) SOLUTIONS

    Science.gov (United States)

    Bulk syntheses of silver (Ag) and iron (Fe) nanorods using poly (ethylene glycol), PEG, under microwave irradiation (MW) conditions are reported. Favorable conditions to make Ag nanorods were established and can be extended to make Fe nanorods with uniform size and shape. The nan...

  7. Prospects for Detecting a Cosmic Bulk Flow

    Science.gov (United States)

    Rose, Benjamin; Garnavich, Peter M.; Mathews, Grant James

    2015-01-01

    The ΛCDM model is based upon a homogeneous, isotropic space-time leading to uniform expansion with random peculiar velocities caused by local gravitation perturbations. The Cosmic Microwave Background (CMB) radiation evidences a significant dipole moment in the frame of the Local Group. This motion is usually explained with the Local Group's motion relative to the background Hubble expansion. An alternative explanation, however, is that the dipole moment is the result of horizon-scale curvature remaining from the birth of space-time, possibly a result of quantum entanglement with another universe. This would appear as a single velocity (a bulk flow) added to all points in space. These two explanations differ observationally on cosmic distance scales (z > 0.1). There have been many differing attempts to detect a bulk flow, many with no detectable bulk flow but some with a bulk flow velocity as large as 1000 km/s. Here we report on a technique based upon minimizing the scatter around the expected cosine distribution of the Hubble redshift residuals with respect to angular distance on the sky. That is, the algorithm searches for a directional dependence of Hubble residuals. We find results consistent with most other bulk flow detections at z Type Ia Supernovae to be ~0.01, whereas the current error (~0.2.) is more than an order of magnitude too large for the detection of bulk flow beyond z~0.05.

  8. SYNTHESIZED EXPECTED BAYESIAN METHOD OF PARAMETRIC ESTIMATE

    Institute of Scientific and Technical Information of China (English)

    Ming HAN; Yuanyao DING

    2004-01-01

    This paper develops a new method of parametric estimate, which is named as "synthesized expected Bayesian method". When samples of products are tested and no failure events occur, thedefinition of expected Bayesian estimate is introduced and the estimates of failure probability and failure rate are provided. After some failure information is introduced by making an extra-test, a synthesized expected Bayesian method is defined and used to estimate failure probability, failure rateand some other parameters in exponential distribution and Weibull distribution of populations. Finally,calculations are performed according to practical problems, which show that the synthesized expected Bayesian method is feasible and easy to operate.

  9. Construção, usos sociais e busca de legitimidade das tecnologias da geoinformação do INPE | Construction, social uses and legitimation of geioinformational technologies at INPE

    Directory of Open Access Journals (Sweden)

    Paulo Augusto Sobral Escada

    2012-04-01

    Full Text Available Resumo Este artigo analisa a experiência de um grupo de cientistas e especialistas do Instituto Nacional de Pesquisas Espaciais (INPE que buscou consolidar e legitimar, ao longo de duas décadas, um modo próprio de produção de conhecimento científico e tecnológico. Mudanças de paradigma da Política de C&T, nos anos 1990, retiraram o apoio governamental de seus desenvolvimentos, obrigando-os a mudar suas ações estratégicas para que permitisse manter e preservar o modelo endógeno e autônomo de produção do conhecimento. O artigo trabalha com a perspectiva de Pierre Bourdieu (2001, aplicada ao campo científico, e a noção de “translação” de Bruno Latour (2000. A abordagem sociológica contempla e naturaliza os jogos de interesses e disputas no interior do campo científico, bem como destaca o processo de legitimação científica e social do conhecimento. O artigo tem como objetivo principal oferecer uma contribuição aos processos de discussão do modelo das políticas de CTI, principalmente na definição dos conhecimentos a serem produzidos e absorvidos pelo processo de desenvolvimento econômico e social do país. O artigo destaca a necessidade de se ampliar e aprofundar mecanismos democráticos, adotando maior inclusão e transparência nas disputas do campo científico e das políticas de C&T, condições básicas para alcançar um consenso geral que permita emergir um desenvolvimento desejado e planejado por boa parte da sociedade. Palavras-chave Sociologia do Conhecimento, produção de conhecimento, legitimação, democracia e desenvolvimento Abstract This article analyzes the experience of a group of scientists and specialists from the National Institute of Space Research (INPE who aimed to consolidate and legitimize, throughout two decades, its own way of producing scientific and technological knowledge. Changes of paradigm in Science, Technology and Innovation (STI Politics, during the 90s, removed governmental

  10. A universal isocyanide for diverse heterocycle syntheses

    NARCIS (Netherlands)

    Patil, Pravin; Dömling, Alexander; Khoury, Kareem; Herdtweck, Eberhardt

    2014-01-01

    Novel scaffolds are of uttermost importance for the discovery of functional material. Three different heterocyclic scaffolds easily accessible from isocyanoacetaldehyde dimethylacetal 1 by multicomponent reaction (MCR) are described. They can be efficiently synthesized by a Ugi tetrazole multicompon

  11. Raman assisted lightwave synthesized frequency sweeper

    DEFF Research Database (Denmark)

    Pedersen, Anders Tegtmeier; Rottwitt, Karsten

    2010-01-01

    We present a Lightwave Synthesized Frequency Sweeper comprising a Raman amplifier for loss compensation. The generated pulse train contains 123 pulses and has a flat signal level as well as a low noise level....

  12. Progress in synthesizing functional nano materials

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    @@ With the consistent investment, the research team directed by Prof. Yadong Li of Chemistry Department of Tsinghua University achieved new progress in synthesizing nano materials with specific functions. The research team led by Prof.

  13. Syntheses and Functional Properties of Phthalocyanines

    Directory of Open Access Journals (Sweden)

    Keiichi Sakamoto

    2009-08-01

    Full Text Available Metal phthalocyanine tetrasulfonic acids, metal phthalocyanine octacarboxylic acids, metal octakis(hexyloxymethylphthalocyanines, and metal anthraquinocyanines have been synthesized. Then, zinc bis(1,4-didecylbenzo-bis(3,4-pyridoporphyrazines, the cyclotetramerization products of a 1:1 mixture of 3,6-didecylphthalonitrile and 3,4-dicyanopyridine, were synthesized. Futher, subphthalocyanine and its derivatives, with substituents such as thiobutyl and thiophenyl moieties were synthesized. Electrochemical measurements were performed on the abovementioned phthalocyanine derivatives and analogues in order to examine their electron transfer abilities and electrochemical reaction mechanisms in an organic solvent. Moreover, 1,4,8,11,15,18,22,25-octakis(thiophenylmethyl phthalocyanes were synthesized. The Q-bands of the latter compounds appeared in the near-infrared region. Furthermore, non-colored transparent films in the visible region can be produced.

  14. SYNTHESES AND PROPERTIES OF POLYMERIZABLE METALLOPHTHALOCYANINE DERIVATIVES

    Institute of Scientific and Technical Information of China (English)

    LIU Yunqi; YAMADA Akira; SHIGEHARA Kiyotaka; HARA Masahiko

    1988-01-01

    Metallophthalocyanine derivatives with polymerizable vinyl groups were synthesized, characterized and polymerized. Preliminary results on their Langmuir-Blodgett (LB) film formation and the electronic properties of (Indium-Tin Oxide/LB-film/Al) Schottky devices were reported.

  15. The Trajectory Synthesizer Generalized Profile Interface

    Science.gov (United States)

    Lee, Alan G.; Bouyssounouse, Xavier; Murphy, James R.

    2010-01-01

    The Trajectory Synthesizer is a software program that generates aircraft predictions for Air Traffic Management decision support tools. The Trajectory Synthesizer being used by researchers at NASA Ames Research Center was restricted in the number of trajectory types that could be generated. This limitation was not sufficient to support the rapidly changing Air Traffic Management research requirements. The Generalized Profile Interface was developed to address this issue. It provides a flexible approach to describe the constraints applied to trajectory generation and may provide a method for interoperability between trajectory generators. It also supports the request and generation of new types of trajectory profiles not possible with the previous interface to the Trajectory Synthesizer. Other enhancements allow the Trajectory Synthesizer to meet the current and future needs of Air Traffic Management research.

  16. Method to synthesize metal chalcogenide monolayer nanomaterials

    Energy Technology Data Exchange (ETDEWEB)

    Hernandez-Sanchez, Bernadette A.; Boyle, Timothy J.

    2016-12-13

    Metal chalcogenide monolayer nanomaterials can be synthesized from metal alkoxide precursors by solution precipitation or solvothermal processing. The synthesis routes are more scalable, less complex and easier to implement than other synthesis routes.

  17. New Mixer Used in Direct Frequency Synthesizer

    Directory of Open Access Journals (Sweden)

    Milan Stork

    2008-01-01

    Full Text Available Frequency synthesizers are an essential part of any modern transceiver system. They generate clock and oscillator signals needed for up and down conversion. Today’s communication standards demand both high frequency accuracy and fast frequency settling. The fine frequency resolution, low spurious signals, accuracy and stability are most important for these devices. In this paper, the new frequency synthesizer architecture based on direct synthesis and coincidence mixer is presented. The simulation results are also shown.

  18. Raman assisted lightwave synthesized frequency sweeper

    DEFF Research Database (Denmark)

    Pedersen, Anders Tegtmeier; Rottwitt, Karsten

    2010-01-01

    We present a Lightwave Synthesized Frequency Sweeper comprising a Raman amplifier for loss compensation. The generated pulse train contains 123 pulses and has a flat signal level as well as a low noise level.......We present a Lightwave Synthesized Frequency Sweeper comprising a Raman amplifier for loss compensation. The generated pulse train contains 123 pulses and has a flat signal level as well as a low noise level....

  19. 75 FR 64585 - Bulk Solid Hazardous Materials: Harmonization With the International Maritime Solid Bulk Cargoes...

    Science.gov (United States)

    2010-10-19

    ... nonsubstantive changes, however, to correct grammar, internal paragraph references, and a temperature conversion... means the English version of the ``International Maritime Solid Bulk Cargoes Code'' published by...

  20. Development of superconductor bulk for superconductor bearing

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Chan Joong; Jun, Byung Hyuk; Park, Soon Dong (and others)

    2008-08-15

    Current carrying capacity is one of the most important issues in the consideration of superconductor bulk materials for engineering applications. There are numerous applications of Y-Ba-Cu-O (YBCO) bulk superconductors e.g. magnetic levitation train, flywheel energy storage system, levitation transportation, lunar telescope, centrifugal device, magnetic shielding materials, bulk magnets etc. Accordingly, to obtain YBCO materials in the form of large, single crystals without weak-link problem is necessary. A top seeded melt growth (TSMG) process was used to fabricate single crystal YBCO bulk superconductors. The seeded and infiltration growth (IG) technique was also very promising method for the synthesis of large, single-grain YBCO bulk superconductors with good superconducting properties. 5 wt.% Ag doped Y211 green compacts were sintered at 900 .deg. C {approx} 1200 .deg.C and then a single crystal YBCO was fabricated by an infiltration method. A refinement and uniform distribution of the Y211 particles in the Y123 matrix were achieved by sintering the Ag-doped samples. This enhancement of the critical current density was ascribable to a fine dispersion of the Y211 particles, a low porosity and the presence of Ag particles. In addition, we have designed and manufactured large YBCO single domain with levitation force of 10-13 kg/cm{sup 2} using TSMG processing technique.

  1. Into the Bulk: A Covariant Approach

    CERN Document Server

    Engelhardt, Netta

    2016-01-01

    I propose a general, covariant way of defining when one region is "deeper in the bulk" than another. This definition is formulated outside of an event horizon (or in the absence thereof) in generic geometries; it may be applied to both points and surfaces, and may be used to compare the depth of bulk points or surfaces relative to a particular boundary subregion or relative to the entire boundary. Using the recently proposed "lightcone cut" formalism, the comparative depth between two bulk points can be determined from the singularity structure of Lorentzian correlators in the dual field theory. I prove that, by this definition, causal wedges of progressively larger regions probe monotonically deeper in the bulk. The definition furthermore matches expectations in pure AdS and in static AdS black holes with isotropic spatial slices, where a well-defined holographic coordinate exists. In terms of holographic RG flow, this new definition of bulk depth makes contact with coarse-graining over both large distances ...

  2. Bio-inspired routes for synthesizing efficient nanoscale platinum electrocatalysts

    Energy Technology Data Exchange (ETDEWEB)

    Cha, Jennifer N. [Univ. of California, San Diego, CA (United States); Wang, Joseph [Univ. of California, San Diego, CA (United States)

    2014-08-31

    The overall objective of the proposed research is to use fundamental advances in bionanotechnology to design powerful platinum nanocrystal electrocatalysts for fuel cell applications. The new economically-viable, environmentally-friendly, bottom-up biochemical synthetic strategy will produce platinum nanocrystals with tailored size, shape and crystal orientation, hence leading to a maximum electrochemical reactivity. There are five specific aims to the proposed bio-inspired strategy for synthesizing efficient electrocatalytic platinum nanocrystals: (1) isolate peptides that both selectively bind particular crystal faces of platinum and promote the nucleation and growth of particular nanocrystal morphologies, (2) pattern nanoscale 2-dimensional arrays of platinum nucleating peptides from DNA scaffolds, (3) investigate the combined use of substrate patterned peptides and soluble peptides on nanocrystal morphology and growth (4) synthesize platinum crystals on planar and large-area carbon electrode supports, and (5) perform detailed characterization of the electrocatalytic behavior as a function of catalyst size, shape and morphology. Project Description and Impact: This bio-inspired collaborative research effort will address key challenges in designing powerful electrocatalysts for fuel cell applications by employing nucleic acid scaffolds in combination with peptides to perform specific, environmentally-friendly, simultaneous bottom-up biochemical synthesis and patterned assembly of highly uniform and efficient platinum nanocrystal catalysts. Bulk synthesis of nanoparticles usually produces a range of sizes, accessible catalytic sites, crystal morphologies, and orientations, all of which lead to inconsistent catalytic activities. In contrast, biological systems routinely demonstrate exquisite control over inorganic syntheses at neutral pH and ambient temperature and pressures. Because the orientation and arrangement of the templating biomolecules can be precisely

  3. Characterization of semi-insulating materials by photoinduced current transient spectroscopy: Fe doped INP for micro-optoelectronics and CdZnTe for nuclear detection; Caracterisation de materiaux semi-isolants par spectroscopie de transitoirede courant photoinduit: materiaux INP dopes Fe pour la micro-optoelectronique et CDZNTE pour la detection nucleaire

    Energy Technology Data Exchange (ETDEWEB)

    Cherkaoui, K

    1998-07-01

    The need of semi-insulating materials, of great quality, concerns various application domains. For instance, the very resistive substrates InP and CdZnTe are respectively adapted to the micro-optoelectronic circuits and to nuclear detectors. These two materials have been characterized by the thermal photoinduced current transient spectroscopy. The first part of this thesis is the defects analysis of annealing InP substrates, to understand the compensation process of this material. Two activation energy levels around 0,2 to 0,4 eV resulting from the thermal treatment have been detected. The iron omnipresence in the substrates, even undoped, has been noticed. It is then necessary to take into account the iron presence to understand the compensation process in these InP annealing substrates. the second part presents the study of the CdZnTe material, elaborated by the Bridgman method, to emphasize the defects leading to the decrease of the detector performances. The presence of three deep levels, near the forbidden band middle, is in relation with the detectors performances. (A.L.B.)

  4. Native oxides formation and surface wettability of epitaxial III-V materials: The case of InP and GaAs

    Science.gov (United States)

    Gocalinska, A.; Rubini, S.; Pelucchi, E.

    2016-10-01

    The time dependent transition from hydrophobic to hydrophilic states of the metalorganic vapour phase epitaxy (MOVPE) grown InP, GaAs and InAs is systematically documented by contact angle measurements. Natural oxides forming on the surfaces of air-exposed materials, as well as the results of some typical wet chemical process to remove those oxides, were studied by X-ray photoemission spectroscopy (XPS), revealing, surprisingly, a fundamental lack of strong correlations between the surface oxide composition and the reported systematic changes in hydrophobicity.

  5. Wavelength Conversion of a 9.35-Gb/s RZ OOK Signal in an InP Photonic Crystal Nanocavity

    DEFF Research Database (Denmark)

    Vukovic, Dragana; Yu, Yi; Heuck, Mikkel

    2014-01-01

    Wavelength conversion of a 10-Gb/s (9.35 Gb/s net rate) return-to-zero ON-OFF keying signal is demonstrated using a simple InP photonic crystal H0 nanocavity with Lorentzian line shape. The shifting of the resonance induced by the generation of free-carriers enables the pump intensity modulation...... to be transferred to a continuous-wave probe with a sufficiently high quality so that the converted signal can be detected with a conventional telecommunication receiver. A clear eye diagram is observed for the converted signal showing a pre-forward error correction bit-error-ratio down to $10^{-3}$....

  6. Charge storage properties of InP quantum dots in GaAs metal-oxide-semiconductor based nonvolatile flash memory devices

    Science.gov (United States)

    Kundu, Souvik; Halder, Nripendra N.; Biswas, Pranab; Biswas, D.; Banerji, P.; Mukherjee, Rabibrata; Chakraborty, S.

    2012-11-01

    Metal organic vapor phase epitaxially grown 5 nm InP quantum dots (QDs) were embedded as charge storage elements between high-k control and tunneling dielectric layers in GaAs metal-oxide-semiconductor based nonvolatile memory devices. The QDs trap more electrons resulting in a large memory window (6.3 V) along with low leakage due to Coulomb blockade effect. 16.5% charge loss was found even after 105 s indicating its good charge storing potential. The programming and erasing operations were discussed with proposed band diagram.

  7. Influence of the oxide aperture radius on the mode spectra of (Al,Ga)As vertical microcavities with electrically excited InP quantum dots

    Science.gov (United States)

    Weidenfeld, S.; Schulz, W.-M.; Kessler, C. A.; Reischle, M.; Eichfelder, M.; Wiesner, M.; Jetter, M.; Michler, P.

    2013-01-01

    In this letter, we report about mode characteristics of microcavity lasers with red-emitting InP quantum dots. The mode spectra and the quality factor of devices with different oxide aperture sizes are analyzed. The lateral mode confinement in the electrical devices is defined via oxide apertures. We found a good agreement between a simple analytical modeling of the mode structure and measurements, which allows to adjust the design of future devices. The quality factors show an analogous behavior as etched micropillars. The enhanced intensity of the higher order modes compared to the fundamental mode can be explained with the current density distribution within the device favoring higher order modes.

  8. Monolithic integration on InP of a Wannier Stark modulator with a strained MQW DFB 1.55-micron laser

    Science.gov (United States)

    Allovon, Michel; Fouchet, Sylvie; Harmand, Jean-Christophe; Ougazzaden, Abdallah; Rose, Benoit; Gloukhian, Andre; Devaux, Fabrice

    1995-02-01

    We present the technical approach and the preliminary device results on the first integration of a Wannier Stark (WS) electroabsorption (EA) modulator with a DFB laser on InP. The WS modulator active layer consists of a lattice matched InGaAs-InAlAs superlattice (SL) grown by solid source MBE (Molecular Beam Epitaxy). It is butt-coupled to a laser grown by AP-MOVPE whose active layer includes a strained InGaAsP-InGaAsP MQW stack. Device results cover static performances of integrated lasers and modulators, and measurements of high frequency characteristics (small signal bandwidth and 10 Gb/s eye diagram).

  9. Optical and electrical properties of InP/InGaAs grown selectively on SiO2-masked InP

    Science.gov (United States)

    Wang, Y. L.; Feygenson, A.; Hamm, R. A.; Ritter, D.; Weiner, J. S.; Temkin, H.; Panish, M. B.

    1991-07-01

    Heterostructures of InGaAs/InP have been grown selectively through windows in SiO2-masked InP substrates using metalorganic molecular beam epitaxy. The structures show high cathodoluminescence efficiency for window sizes down to 5 μm. A significant red shift, consistent with compressive lattice strain, and reduced intensity are observed for smaller features. Anomalous growth is observed near the edges of the windows. Selectively grown InGaAs/InP p-n junctions and bipolar transistors exhibit excellent electrical characteristics after removal of 1-2 μm of edge material.

  10. Electrodeposition of epitaxial ZnSe films on InP and GaAs from an aqueous zinc sulfate-selenosulfate solution

    Energy Technology Data Exchange (ETDEWEB)

    Riveros, G.; Guillemoles, J.F.; Lincot, D. [Laboratoire d' Electrochimie et de Chimie Analytique (UMR CNRS 7575), Ecole Nationale Superieure de Chimie de Paris, 11 rue Pierre et Marie Curie, F-75231 Paris Cedex 05 (France); Gomez Meier, H. [Instituto de Chimica, Faculdad de Ciencas Basicas y Matematicas, Universidad Catolica de Valparaiso, Avda. Brasil 2950, Casila, Valparaiso (Chile); Froment, M.; Bernard, M.C.; Cortes, R. [Laboratoire de Physique des Liquides et Electrochimie (UPR CNRS 15), Universite Pierre et Marie Curie, 4 place Jussieu, F-75232 Paris Cedex 05 (France)

    2002-09-16

    Epitaxial growth of ZnSe thin films on InP(111) and GaAs(100) substrates has been achieved by electrodeposition from a zinc sulfate/selenosulfate solution. The deposition was observed over a wide range of applied potentials (-1.6-1.9 V vs. mercury/mercury sulfate). The epitaxy was characterized by reflective high energy electron diffraction (see Figure for a ZnSe epitaxial layer) and grazing angle X-ray diffraction. (Abstract Copyright [2002], Wiley Periodicals, Inc.)

  11. A diphoton resonance from bulk RS

    Science.gov (United States)

    Csáki, Csaba; Randall, Lisa

    2016-07-01

    Recent LHC data hinted at a 750 GeV mass resonance that decays into two photons. A significant feature of this resonance is that its decays to any other Standard Model particles would be too low to be detected so far. Such a state has a compelling explanation in terms of a scalar or a pseudoscalar that is strongly coupled to vector states charged under the Standard Model gauge groups. Such a scenario is readily accommodated in bulk RS with a scalar localized in the bulk away from but close to the Higgs. Turning this around, we argue that a good way to find the elusive bulk RS model might be the search for a resonance with prominent couplings to gauge bosons.

  12. A stereoscopic look into the bulk

    Science.gov (United States)

    Czech, Bartlomiej; Lamprou, Lampros; McCandlish, Samuel; Mosk, Benjamin; Sully, James

    2016-07-01

    We present the foundation for a holographic dictionary with depth perception. The dictionary consists of natural CFT operators whose duals are simple, diffeomorphisminvariant bulk operators. The CFT operators of interest are the "OPE blocks," contributions to the OPE from a single conformal family. In holographic theories, we show that the OPE blocks are dual at leading order in 1 /N to integrals of effective bulk fields along geodesics or homogeneous minimal surfaces in anti-de Sitter space. One widely studied example of an OPE block is the modular Hamiltonian, which is dual to the fluctuation in the area of a minimal surface. Thus, our operators pave the way for generalizing the Ryu-Takayanagi relation to other bulk fields.

  13. Bulk amorphous Mg-based alloys

    DEFF Research Database (Denmark)

    Pryds, Nini

    2004-01-01

    The present paper describes the preparation and properties of bulk amorphous quarternary Mg-based alloys and the influence of additional elements on the ability of the alloy to form bulk amorphous. The main goal is to find a Mg-based alloy system which shows both high strength to weight ratio...... and a low glass transition temperature. The alloys were prepared by using a relatively simple technique, i.e. rapid cooling of the melt in a copper wedge mould. The essential structural changes that are achieved by going from the amorphous to the crystalline state through the supercooled liquid state...... are discussed in this paper. On the basis of these measurements phase diagrams of the different systems were constructed. Finally, it is demonstrated that when pressing the bulk amorphous alloy onto a metallic dies at temperatures within the supercooled liquid region, the alloy faithfully replicates the surface...

  14. Orchestrating Bulk Data Movement in Grid Environments

    Energy Technology Data Exchange (ETDEWEB)

    Vazhkudai, SS

    2005-01-25

    Data Grids provide a convenient environment for researchers to manage and access massively distributed bulk data by addressing several system and transfer challenges inherent to these environments. This work addresses issues involved in the efficient selection and access of replicated data in Grid environments in the context of the Globus Toolkit{trademark}, building middleware that (1) selects datasets in highly replicated environments, enabling efficient scheduling of data transfer requests; (2) predicts transfer times of bulk wide-area data transfers using extensive statistical analysis; and (3) co-allocates bulk data transfer requests, enabling parallel downloads from mirrored sites. These efforts have demonstrated a decentralized data scheduling architecture, a set of forecasting tools that predict bandwidth availability within 15% error and co-allocation architecture, and heuristics that expedites data downloads by up to 2 times.

  15. Bulk fields from the boundary OPE

    CERN Document Server

    Guica, Monica

    2016-01-01

    Previous work has established an equality between the geodesic integral of a free bulk field in AdS and the contribution of the conformal descendants of its dual CFT primary operator to the OPE of two other operators inserted at the endpoints of the geodesic. Working in the context of AdS$_3$/CFT$_2$, we extend this relation to include all $1/N$ corrections to the bulk field obtained by dressing it with i) a $U(1)$ current and ii) the CFT stress tensor, and argue it equals the contribution of the Ka\\v{c}-Moody/the Virasoro block to the respective boundary OPE. This equality holds for a particular framing of the bulk field to the boundary that involves a split Wilson line.

  16. Multiphase composites with extremal bulk modulus

    DEFF Research Database (Denmark)

    Gibiansky, L. V.; Sigmund, Ole

    2000-01-01

    This paper is devoted to the analytical and numerical study of isotropic elastic composites made of three or more isotropic phases. The ranges of their effective bulk and shear moduli are restricted by the Hashin-Shtrikman-Walpole (HSW) bounds. For two-phase composites, these bounds are attainable......, that is, there exist composites with extreme bulk and shear moduli. For multiphase composites, they may or may not be attainable depending on phase moduli and volume fractions. Sufficient conditions of attainability of the bounds and various previously known and new types of optimal composites...... are described. Most of our new results are related to the two-dimensional problem. A numerical topology optimization procedure that solves the inverse homogenization problem is adopted and used to look for two-dimensional three-phase composites with a maximal effective bulk modulus. For the combination...

  17. Bulk Comptonization by Turbulence in Accretion Disks

    CERN Document Server

    Kaufman, J

    2016-01-01

    Radiation pressure dominated accretion discs around compact objects may have turbulent velocities that greatly exceed the electron thermal velocities within the disc. Bulk Comptonization by the turbulence may therefore dominate over thermal Comptonization in determining the emergent spectrum. Bulk Comptonization by divergenceless turbulence is due to radiation viscous dissipation only. It can be treated as thermal Comptonization by solving the Kompaneets equation with an equivalent "wave" temperature, which is a weighted sum over the power present at each scale in the turbulent cascade. Bulk Comptonization by turbulence with non-zero divergence is due to both pressure work and radiation viscous dissipation. Pressure work has negligible effect on photon spectra in the limit of optically thin turbulence, and in this limit radiation viscous dissipation alone can be treated as thermal Comptonization with a temperature equivalent to the full turbulent power. In the limit of extremely optically thick turbulence, ra...

  18. A Diphoton Resonance from Bulk RS

    CERN Document Server

    Csaki, Csaba

    2016-01-01

    Recent LHC data hints at a 750 GeV mass resonance that decays into two photons. A significant feature of this resonance is that its decays to Higges and to any other Standard Model particles are so far too low to be detected. Such a state has a compelling explanation in terms of a scalar or a pseudoscalar that is strongly coupled to vector states charged under the Standard Model gauge groups. We argue that if the state is a scalar, some form of sequestering is likely to be necessary to naturally explain the suppressed scalar-Higgs interactions. Such a scenario is readily accommodated in bulk RS with a scalar localized in the bulk away from the Higgs. Turning this around, we argue that a good way to find the elusive bulk RS model might be the search for a resonance with prominent couplings to gauge bosons.

  19. Spherically symmetric brane spacetime with bulk gravity

    Science.gov (United States)

    Chakraborty, Sumanta; SenGupta, Soumitra

    2015-01-01

    Introducing term in the five-dimensional bulk action we derive effective Einstein's equation on the brane using Gauss-Codazzi equation. This effective equation is then solved for different conditions on dark radiation and dark pressure to obtain various spherically symmetric solutions. Some of these static spherically symmetric solutions correspond to black hole solutions, with parameters induced from the bulk. Specially, the dark pressure and dark radiation terms (electric part of Weyl curvature) affect the brane spherically symmetric solutions significantly. We have solved for one parameter group of conformal motions where the dark radiation and dark pressure terms are exactly obtained exploiting the corresponding Lie symmetry. Various thermodynamic features of these spherically symmetric space-times are studied, showing existence of second order phase transition. This phenomenon has its origin in the higher curvature term with gravity in the bulk.

  20. Making bulk-conductive glass microchannel plates

    Science.gov (United States)

    Yi, Jay J. L.; Niu, Lihong

    2008-02-01

    The fabrication of microchannel plate (MCP) with bulk-conductive characteristics has been studied. Semiconducting clad glass and leachable core glass were used for drawing fibers and making MCP. Co-axial single fiber was drawn from a platinum double-crucible in an automatic fiberizing system, and the fibers were stacked and redrawn into multifiber by a special gripping mechanism. The multifibers were stacked again and the boule was made and sliced into discs. New MCPs were made after chemically leaching process without the traditional hydrogen firing. It was shown that bulk-conductive glass MCP can operate at higher voltage with lower noise.

  1. "Work-Hardenable" ductile bulk metallic glass.

    Science.gov (United States)

    Das, Jayanta; Tang, Mei Bo; Kim, Ki Buem; Theissmann, Ralf; Baier, Falko; Wang, Wei Hua; Eckert, Jürgen

    2005-05-27

    Usually, monolithic bulk metallic glasses undergo inhomogeneous plastic deformation and exhibit poor ductility (< 1%) at room temperature. We present a new class of bulk metallic glass, which exhibits high strength of up to 2265 MPa together with extensive "work hardening" and large ductility of 18%. Significant increase in the flow stress was observed during deformation. The "work-hardening" capability and ductility of this class of metallic glass is attributed to a unique structure correlated with atomic-scale inhomogeneity, leading to an inherent capability of extensive shear band formation, interactions, and multiplication of shear bands.

  2. Synthesis of Bulk Superconducting Magnesium Diboride

    Directory of Open Access Journals (Sweden)

    Margie Olbinado

    2002-06-01

    Full Text Available Bulk polycrystalline superconducting magnesium diboride, MgB2, samples were successfully prepared via a one-step sintering program at 750°C, in pre Argon with a pressure of 1atm. Both electrical resistivity and magnetic susceptibility measurements confirmed the superconductivity of the material at 39K, with a transition width of 5K. The polycrystalline nature, granular morphology, and composition of the sintered bulk material were confirmed using X-ray diffractometry (XRD, scanning electron microscopy (SEM, and energy dispersive X-ray analysis (EDX.

  3. Towards a Reconstruction of General Bulk Metrics

    CERN Document Server

    Engelhardt, Netta

    2016-01-01

    We prove that the metric of a general holographic spacetime can be reconstructed (up to an overall conformal factor) from distinguished spatial slices - "light-cone cuts" - of the conformal boundary. Our prescription is covariant and applies to bulk points in causal contact with the boundary. Furthermore, we describe a procedure for determining the light-cone cuts corresponding to bulk points in the causal wedge of the boundary in terms of the divergences of correlators in the dual field theory. Possible extensions for determining the conformal factor and including the cuts of points outside of the causal wedge are discussed. We also comment on implications for subregion/subregion duality.

  4. VCO PLL Frequency Synthesizers for Spacecraft Transponders

    Science.gov (United States)

    Smith, Scott; Mysoor, Narayan; Lux, James; Cook, Brian

    2007-01-01

    Two documents discuss a breadboard version of advanced transponders that, when fully developed, would be installed on future spacecraft to fly in deep space. These transponders will be required to be capable of operation on any deepspace- communications uplink frequency channel between 7,145 and 7,235 MHz, and any downlink frequency channel between 8,400 and 8,500 MHz. The document focuses on the design and operation of frequency synthesizers for the receiver and transmitter. Heretofore, frequency synthesizers in deep-space transponders have been based on dielectric resonator oscillators (DROs), which do not have the wide tuning bandwidth necessary to tune over all channels in the uplink or downlink frequency bands. To satisfy the requirement for tuning bandwidth, the present frequency synthesizers are based on voltage-controlled-oscillator (VCO) phase-locked loops (PLLs) implemented by use of monolithic microwave integrated circuits (MMICs) implemented using inGaP heterojunction bipolar transistor (HBT) technology. MMIC VCO PLL frequency synthesizers similar to the present ones have been used in commercial and military applications but, until now, have exhibited too much phase noise for use in deep-space transponders. The present frequency synthesizers contain advanced MMIC VCOs, which use HBT technology and have lower levels of flicker (1/f) phase noise. When these MMIC VCOs are used with high-speed MMIC frequency dividers, it becomes possible to obtain the required combination of frequency agility and low phase noise.

  5. Synthesizing Modular Invariants for Synchronous Code

    Directory of Open Access Journals (Sweden)

    Pierre-Loic Garoche

    2014-12-01

    Full Text Available In this paper, we explore different techniques to synthesize modular invariants for synchronous code encoded as Horn clauses. Modular invariants are a set of formulas that characterizes the validity of predicates. They are very useful for different aspects of analysis, synthesis, testing and program transformation. We describe two techniques to generate modular invariants for code written in the synchronous dataflow language Lustre. The first technique directly encodes the synchronous code in a modular fashion. While in the second technique, we synthesize modular invariants starting from a monolithic invariant. Both techniques, take advantage of analysis techniques based on property-directed reachability. We also describe a technique to minimize the synthesized invariants.

  6. Microstructure and Physical Properties of Tb2TiO5 Neutron Absorber Synthesized by Ball Milling and Sintering

    Science.gov (United States)

    Huang, Jinghua; Ran, Guang; Liu, Tengjiao; Shen, Qiang; Li, Ning

    2016-10-01

    Tb2TiO5 neutron absorber was synthesized by ball milling and sintering. Microstructure character of ball-milled Tb4O7-17.605%TiO2 (mass fraction, %) powders and sintered bulks was analyzed using XRD, SEM and TEM. The microhardness, coefficient of thermal expansion and thermal conductivity of sintered bulks were measured. The experiment results showed that the nanocrystalline solid solution was obtained during ball milling. After 96 h of ball milling, TiO2 was completely solved in Tb4O7 and the crystal size of Tb4O7 was up to 37 nm. The bulk materials prepared by cold isostatic pressing were sintered at 1300 °C. Tb2TiO5 bulks with an orthorhombic structure were obtained. The microhardness of sintered bulks, as well as the thermal conductivity, increased firstly with increasing ball milling time and then decreased. The coefficient of thermal expansion decreased initially and then increased with increasing ball milling time. For the sintered bulk with powder milled for 48 h, the highest values of both microhardness and thermal conductivity were observed, whereas the lowest coefficient of thermal expansion was exhibited. In addition, with increasing testing temperature, the thermal conductivity of sintered bulks initially fell and then rebounded while an opposite trend was found in the coefficient of thermal expansion.

  7. Perception of Paralinguistic Traits in Synthesized Voices

    DEFF Research Database (Denmark)

    Baird, Alice Emily; Hasse Jørgensen, Stina; Parada-Cabaleiro, Emilia

    the paralinguistic traits of the synthesized voice. Using a corpus of 13 synthesized voices, constructed from acoustic concatenative speech synthesis, we assessed the response of 23 listeners from differing cultural backgrounds. Evaluating if the perception shifts from the known ground–truths, we asked listeners...... to assigned traits of age, gender, accent origin, and human–likeness. Results present a difference in perception for age and human–likeness across voices, and a general agreement across listeners for both gender and accent origin. Connections found between age, gender and human–likeness call for further...

  8. Polymer-fullerene bulk heterojunction solar cells

    NARCIS (Netherlands)

    Janssen, RAJ; Hummelen, JC; Saricifti, NS

    2005-01-01

    Nanostructured phase-separated blends, or bulk heterojunctions, of conjugated Polymers and fullerene derivatives form a very attractive approach to large-area, solid-state organic solar cells.The key feature of these cells is that they combine easy, processing from solution on a variety of substrate

  9. Failure by fracture in bulk metal forming

    DEFF Research Database (Denmark)

    Silva, C.M.A.; Alves, Luis M.; Nielsen, Chris Valentin

    2015-01-01

    This paper revisits formability in bulk metal forming in the light of fundamental concepts of plasticity,ductile damage and crack opening modes. It proposes a new test to appraise the accuracy, reliability and validity of fracture loci associated with crack opening by tension and out-of-plane she...

  10. THE OPTIMIZATION OF PLUSH YARNS BULKING PROCESS

    Directory of Open Access Journals (Sweden)

    VINEREANU Adam

    2014-05-01

    Full Text Available This paper presents the experiments that were conducted on the installation of continuous bulking and thermofixing “SUPERBA” type TVP-2S for optimization of the plush yarns bulking process. There were considered plush yarns Nm 6.5/2, made of the fibrous blend of 50% indigenous wool sort 41 and 50% PES. In the first stage, it performs a thermal treatment with a turboprevaporizer at a temperature lower than thermofixing temperature, at atmospheric pressure, such that the plush yarns - deposed in a freely state on a belt conveyor - are uniformly bulking and contracting. It was followed the mathematical modeling procedure, working with a factorial program, rotatable central composite type, and two independent variables. After analyzing the parameters that have a direct influence on the bulking degree, there were selected the pre-vaporization temperature (coded x1,oC and the velocity of belt inside pre-vaporizer (coded x 2, m/min. As for the dependent variable, it was chosen the plush yarn diameter (coded y, mm. There were found the coordinates of the optimal point, and then this pair of values was verified in practice. These coordinates are: x1optim= 90oC and x 2optim= 6.5 m/min. The conclusion is that the goal was accomplished: it was obtained a good cover degree f or double-plush carpets by reducing the number of tufts per unit surface.

  11. Forming of bulk metallic glass microcomponents

    DEFF Research Database (Denmark)

    Wert, John A.; Thomsen, Christian; Jensen, Rune Debel

    2009-01-01

    The present article considers forward extrusion, closed-die forging and backward extrusion processes for fabrication of individual microcomponents from two bulk metallic glass (BMG) compositions: Mg60Cu30Y10 and Zr44Cu40Ag8Al8. Two types of tooling were used in the present work: relatively massive...

  12. Bulk viscosity effects on ultrasonic thermoacoustic instability

    Science.gov (United States)

    Lin, Jeffrey; Scalo, Carlo; Hesselink, Lambertus

    2016-11-01

    We have carried out unstructured fully-compressible Navier-Stokes simulations of a minimal-unit traveling-wave ultrasonic thermoacoustic device in looped configuration. The model comprises a thermoacoustic stack with 85% porosity and a tapered area change to suppress the fundamental standing-wave mode. A bulk viscosity model, which accounts for vibrational and rotational molecular relaxation effects, is derived and implemented via direct modification of the viscous stress tensor, τij ≡ 2 μSij +λ/2 μ ∂uk/∂xk δij , where the bulk viscosity is defined by μb ≡ λ +2/3 μ . The effective bulk viscosity coefficient accurately captures acoustic absorption from low to high ultrasonic frequencies and matches experimental wave attenuation rates across five decades. Using pressure-based similitude, the model was downscaled from total length L = 2 . 58 m to 0 . 0258 m, corresponding to the frequency range f = 242 - 24200 Hz, revealing the effects of bulk viscosity and direct modification of the thermodynamic pressure. Simulations are carried out to limit cycle and exhibit growth rates consistent with linear stability analyses, based on Rott's theory.

  13. Longitudinal bulk a coustic mass sensor

    DEFF Research Database (Denmark)

    Hales, Jan Harry; Teva, Jordi; Boisen, Anja;

    2009-01-01

    Design, fabrication and characterization, in terms of mass sensitivity, is presented for a polycrystalline silicon longitudinal bulk acoustic cantilever. The device is operated in air at 51 MHz, resulting in a mass sensitivity of 100 HZ/fg (1 fg = 10{su−15 g). The initial characterization...

  14. Winterization strategies for bulk storage of pickles

    Science.gov (United States)

    Cucumbers are commercially fermented and stored in bulk in outdoor open top fiberglass tanks. During winter, snow and ice accumulates around and on top of tanks influencing heat transfer in an unpredictable manner, often compromising the fruit quality. This study evaluates the performance of inexpen...

  15. A Stereoscopic Look into the Bulk

    CERN Document Server

    Czech, Bartlomiej; McCandlish, Samuel; Mosk, Benjamin; Sully, James

    2016-01-01

    We present the foundation for a holographic dictionary with depth perception. The dictionary consists of natural CFT operators whose duals are simple, diffeomorphism-invariant bulk operators. The CFT operators of interest are the "OPE blocks," contributions to the OPE from a single conformal family. In holographic theories, we show that the OPE blocks are dual at leading order in 1/N to integrals of effective bulk fields along geodesics or homogeneous minimal surfaces in anti-de Sitter space. One widely studied example of an OPE block is the modular Hamiltonian, which is dual to the fluctuation in the area of a minimal surface. Thus, our operators pave the way for generalizing the Ryu-Takayanagi relation to other bulk fields. Although the OPE blocks are non-local operators in the CFT, they admit a simple geometric description as fields in kinematic space--the space of pairs of CFT points. We develop the tools for constructing local bulk operators in terms of these non-local objects. The OPE blocks also allow ...

  16. Fluctuating brane in a dilatonic bulk

    CERN Document Server

    Brax, P; Rodríguez-Martinez, M; Brax, Philippe; Langlois, David; Rodriguez-Martinez, Maria

    2003-01-01

    We consider a cosmological brane moving in a static five-dimensional bulk spacetime endowed with a scalar field whose potential is exponential. After studying various cosmological behaviours for the homogeneous background, we investigate the fluctuations of the brane that leave spacetime unaffected. A single mode embodies these fluctuations and obeys a wave equation which we study for bouncing and ever-expanding branes.

  17. Meteoroid Bulk Density and Ceplecha Types

    Science.gov (United States)

    Blaauw, R. C.; Moser, D. E.; Moorhead, A. V.

    2017-01-01

    The determination of asteroid bulk density is an important aspect of Near Earth Object (NEO) characterization. A fraction of meteoroids originate from asteroids (including some NEOs), thus in lieu of mutual perturbations, satellites, or expensive spacecraft missions, a study of meteoroid bulk densities can potentially provide useful insights into the densities of NEOs and PHOs (Potentially Hazardous Objects). Meteoroid bulk density is still inherently difficult to measure, and is most often determined by modeling the ablation of the meteoroid. One approach towards determining a meteoroid density distribution entails using a more easily measured proxy for the densities, then calibrating the proxy with known densities from meteorite falls, ablation modelling, and other sources. An obvious proxy choice is the Ceplecha type, KB (Ceplecha, 1958), which is thought to indicate the strength of a meteoroid and often correlated to different bulk densities in literature. KB is calculated using the air density at the beginning height of the meteor, the initial velocity, and the zenith angle of the radiant; quantities more readily determined than meteoroid bulk density itself. Numerical values of K(sub B) are sorted into groups (A, B, C, etc.), which have been matched to meteorite falls or meteor showers with known composition such as the porous Draconids. An extensive survey was conducted to establish the strength of the relationship between bulk density and K(sub B), specifically looking at those that additionally determined K(sub B) for the meteors. In examining the modeling of high-resolution meteor data from Kikwaya et al. (2011), the correlation between K(sub B) and bulk density was not as strong as hoped. However, a distinct split by dynamical type was seen with Jovian Tisserand parameter (T(sub J)), with meteoroids from Halley Type comets (T(sub J) densities than those originating from Jupiter Family comets and asteroids (T(sub J) > 2). Therefore, this work indicates

  18. Integration of bulk piezoelectric materials into microsystems

    Science.gov (United States)

    Aktakka, Ethem Erkan

    Bulk piezoelectric ceramics, compared to deposited piezoelectric thin-films, provide greater electromechanical coupling and charge capacity, which are highly desirable in many MEMS applications. In this thesis, a technology platform is developed for wafer-level integration of bulk piezoelectric substrates on silicon, with a final film thickness of 5-100microm. The characterized processes include reliable low-temperature (200°C) AuIn diffusion bonding and parylene bonding of bulk-PZT on silicon, wafer-level lapping of bulk-PZT with high-uniformity (+/-0.5microm), and low-damage micro-machining of PZT films via dicing-saw patterning, laser ablation, and wet-etching. Preservation of ferroelectric and piezoelectric properties is confirmed with hysteresis and piezo-response measurements. The introduced technology offers higher material quality and unique advantages in fabrication flexibility over existing piezoelectric film deposition methods. In order to confirm the preserved bulk properties in the final film, diaphragm and cantilever beam actuators operating in the transverse-mode are designed, fabricated and tested. The diaphragm structure and electrode shapes/sizes are optimized for maximum deflection through finite-element simulations. During tests of fabricated devices, greater than 12microm PP displacement is obtained by actuation of a 1mm2 diaphragm at 111kHz with management IC, which incorporates a supply-independent bias circuitry, an active diode for low-dropout rectification, a bias-flip system for higher efficiency, and a trickle battery charger. The overall system does not require a pre-charged battery, and has power consumption of sleep-mode (simulated). Under lg vibration at 155Hz, a 70mF ultra-capacitor is charged from OV to 1.85V in 50 minutes.

  19. Evaluation of test structures for the novel n{sup +}-in-p pixel and strip sensors for very high radiation environments

    Energy Technology Data Exchange (ETDEWEB)

    Unno, Y., E-mail: yoshinobu.unno@kek.jp [Institute of Particle and Nuclear Study, High Energy Accelerator Research Organization (KEK), 1-1 Oho, Tsukuba-shi 305-0801 (Japan); The Graduate University for Advanced Studies (SOKENDAI), 1-1 Oho, Tsukuba-shi 305-0801 (Japan); Mitsui, S. [The Graduate University for Advanced Studies (SOKENDAI), 1-1 Oho, Tsukuba-shi 305-0801 (Japan); Hori, R.; Ikegami, Y.; Terada, S. [Institute of Particle and Nuclear Study, High Energy Accelerator Research Organization (KEK), 1-1 Oho, Tsukuba-shi 305-0801 (Japan); Kamada, S.; Yamamura, K. [Solid-state Division, Hamamatsu Photonics K.K., 1126-1 Ichino-cho, Higashi-ku, Hamamatsu-shi 435-8558 (Japan); Hanagaki, K. [Department of Physics, Osaka University, Machikaneyama-cho, Toyonaka-shi, Osaka 560-0043 (Japan); Hara, K. [Institute of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennoudai, Tsukuba-shi 305-8571 (Japan); Jinnouchi, O. [Department of Physics, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8550 (Japan); Kimura, N. [Research Institute for Science and Engineering, Waseda University, 1-6-1 Nishi-Waseda, Shinjuku-ku, Tokyo 169-8050 (Japan); Nagai, K. [Institute of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennoudai, Tsukuba-shi 305-8571 (Japan); Nakano, I. [Department of Physics, Okayama University, 3-1-1 Tshushima-naka, Kita-ku, Okayama-shi 700-8530 (Japan); Oda, S. [Department of Physics, Kyushu University, 6-10-11 Hakozaki, Higashi-ku, Fukuoka-shi 812-8581 (Japan); Takashima, R. [Department of Education, Kyoto University of Education, 1 Fukakusa-Fujimori-cho, Fushimi-ku, Kyoto 612-8522 (Japan); Takubo, Y. [Institute of Particle and Nuclear Study, High Energy Accelerator Research Organization (KEK), 1-1 Oho, Tsukuba-shi 305-0801 (Japan); Tojo, J. [Department of Physics, Kyushu University, 6-10-11 Hakozaki, Higashi-ku, Fukuoka-shi 812-8581 (Japan); and others

    2013-12-11

    Radiation-tolerant n{sup +}-in-p silicon sensors were developed for use in very high radiation environments. Novel n{sup +}-in-p silicon strip and pixel sensors and test structures were fabricated, tested and evaluated, in order to understand the designs implemented. The resistance between the n{sup +} implants (interstrip resistance), the electric potential of the p-stop, and the punch-through-protection (PTP) onset voltage were measured before and as a function of fluence after irradiation. The technology computer-aided design (TCAD) simulations were used to understand the radiation damage and fluence dependence of the structures. The decrease in the interstrip resistance is a consequence of increased leakage current. The decrease in the electric potential of the p-stop results from a build-up of positive charge in the silicon–silicon oxide interface. The decrease and subsequent increase in the PTP onset voltages results from the interface charge build-up and an increase in acceptor states.

  20. Investigation of p-side contact layers for II-VI compound semiconductor optical devices fabricated on InP substrates by MBE

    Science.gov (United States)

    Takamatsu, Shingo; Nomura, Ichirou; Shiraishi, Tomohiro; Kishino, Katsumi

    2015-09-01

    N-doped p-type ZnTe and ZnSeTe contact layers were investigated to evaluate which is more suitable for use in II-VI compound semiconductor optical devices on InP substrates. Contact resistances (Rc) between the contact layers and several electrode materials (Pd/Pt/Au, Pd/Au, and Au) were measured by the circular transmission line model (c-TLM) method using p-n diode samples grown on InP substrates by molecular beam epitaxy (MBE). The lowest Rc (6.5×10-5 Ω cm2) was obtained in the case of the ZnTe contact and Pd/Pt/Au electrode combination, which proves that the combination is suitable for obtaining low Rc. Yellow light-emitting diode devices with a ZnTe and ZnSeTe p-contact layer were fabricated by MBE to investigate the effect of different contact layers. The devices were characterized under direct current injections at room temperature. Yellow emission at around 600 nm was observed for each device. Higher emission intensity and lower slope resistance were obtained for the device with the ZnTe contact layer and Pd/Pt/Au electrode compared with other devices. These device performances are ascribed to the low Rc of the ZnTe contact and Pd/Pt/Au electrode combination.

  1. A G-band terahertz monolithic integrated amplifier in 0.5-μm InP double heterojunction bipolar transistor technology

    Science.gov (United States)

    Ou-Peng, Li; Yong, Zhang; Rui-Min, Xu; Wei, Cheng; Yuan, Wang; Bing, Niu; Hai-Yan, Lu

    2016-05-01

    Design and characterization of a G-band (140-220 GHz) terahertz monolithic integrated circuit (TMIC) amplifier in eight-stage common-emitter topology are performed based on the 0.5-μm InGaAs/InP double heterojunction bipolar transistor (DHBT). An inverted microstrip line is implemented to avoid a parasitic mode between the ground plane and the InP substrate. The on-wafer measurement results show that peak gains are 20 dB at 140 GHz and more than 15-dB gain at 140-190 GHz respectively. The saturation output powers are -2.688 dBm at 210 GHz and -2.88 dBm at 220 GHz, respectively. It is the first report on an amplifier operating at the G-band based on 0.5-μm InP DHBT technology. Compared with the hybrid integrated circuit of vacuum electronic devices, the monolithic integrated circuit has the advantage of reliability and consistency. This TMIC demonstrates the feasibility of the 0.5-μm InGaAs/InP DHBT amplifier in G-band frequencies applications. Project supported by the National Natural Science Foundation of China (Grant No. 61501091) and the Fundamental Research Funds for the Central Universities of Ministry of Education of China (Grant Nos. ZYGX2014J003 and ZYGX2013J020).

  2. Enhanced Photocatalytic Reduction of CO2 to CO through TiO2 Passivation of InP in Ionic Liquids.

    Science.gov (United States)

    Zeng, Guangtong; Qiu, Jing; Hou, Bingya; Shi, Haotian; Lin, Yongjing; Hettick, Mark; Javey, Ali; Cronin, Stephen B

    2015-09-21

    A robust and reliable method for improving the photocatalytic performance of InP, which is one of the best known materials for solar photoconversion (i.e., solar cells). In this article, we report substantial improvements (up to 18×) in the photocatalytic yields for CO2 reduction to CO through the surface passivation of InP with TiO2 deposited by atomic layer deposition (ALD). Here, the main mechanisms of enhancement are the introduction of catalytically active sites and the formation of a pn-junction. Photoelectrochemical reactions were carried out in a nonaqueous solution consisting of ionic liquid, 1-ethyl-3-methylimidazolium tetrafluoroborate ([EMIM]BF4), dissolved in acetonitrile, which enables CO2 reduction with a Faradaic efficiency of 99% at an underpotential of +0.78 V. While the photocatalytic yield increases with the addition of the TiO2 layer, a corresponding drop in the photoluminescence intensity indicates the presence of catalytically active sites, which cause an increase in the electron-hole pair recombination rate. NMR spectra show that the [EMIM](+) ions in solution form an intermediate complex with CO2(-), thus lowering the energy barrier of this reaction.

  3. Fabrication of a P-stabilized InP(0 0 1) surface at low pressure and temperature using t-butylphosphine (TBP)

    Science.gov (United States)

    Fukuda, Yasuo; Kumano, Hiroshi; Nakamura, Hiroyuki

    2004-09-01

    Fabrication of a P-stabilized InP(0 0 1)-(2 × 1) surface at low pressure and temperature using t-butylphosphine (TBP) has been studied. The (2 × 1) surface was fabricated at 260 °C using TBP (5 × 10 -6 Torr) cracked with a hot W-filament although the (2 × 4) structure was not changed by exposing to TBP (5 × 10 -6-1 × 10 -5 Torr) at 260-280 °C without the filament. Mass spectra of the cracked TBP indicate that the relative spectral intensities of P and P 2 are increased by 1.3-1.5 times higher than TBP without the filament, leading to the result that the surface can be fabricated at low pressure and temperature. The formation rate of the (2 × 1) surface by our method is higher by about one order of magnitude even at lower pressure and temperature than the reported ALE method. The (2 × 1) surface is stable at 260-280 °C in an ultrahigh vacuum. This suggests that atomic layer epitaxy (ALE) of InP can be performed at low pressure and temperature using the hot W-filament. The Auger electron spectroscopy (AES) result indicates that carbon contamination does not occur on the surface by adsorption of TBP cracked by the filament.

  4. Aqueous-solution growth of GaP and InP nanowires: a general route to phosphide, oxide, sulfide, and tungstate nanowires.

    Science.gov (United States)

    Xiong, Yujie; Xie, Yi; Li, Zhengquan; Li, Xiaoxu; Gao, Shanmin

    2004-02-06

    A general synthetic route has been developed for the growth of metal phosphide, oxide, sulfide, and tungstate nanowires in aqueous solution. In detail, cetyltrimethylammonium cations (CTA(+)) can be combined with anionic inorganic species along a co-condensation mechanism to form lamellar inorganic-surfactant intercalated mesostructures, which serve as both microreactors and reactants for the growth of nanowires. For example, GaP, InP, gamma-MnO(2), ZnO, SnS(2), ZnS, CdWO(4), and ZnWO(4) nanowires have been grown by this route. To the best of our knowledge, this is the first time that the synthesis of GaP and InP nanowires in aqueous solution has been achieved. This strategy is expected to extend to grow nanowires of other materials in solution or by vapor transport routes, since the nanowire growth of any inorganic materials can be realized by selecting an appropriate reaction and its corresponding lamellar inorganic-surfactant precursors.

  5. 46 CFR 148.04-23 - Unslaked lime in bulk.

    Science.gov (United States)

    2010-10-01

    ... 46 Shipping 5 2010-10-01 2010-10-01 false Unslaked lime in bulk. 148.04-23 Section 148.04-23... HAZARDOUS MATERIALS IN BULK Special Additional Requirements for Certain Material § 148.04-23 Unslaked lime in bulk. (a) Unslaked lime in bulk must be transported in unmanned, all steel, double-hulled...

  6. Evaluating Text-to-Speech Synthesizers

    Science.gov (United States)

    Cardoso, Walcir; Smith, George; Fuentes, Cesar Garcia

    2015-01-01

    Text-To-Speech (TTS) synthesizers have piqued the interest of researchers for their potential to enhance the L2 acquisition of writing (Kirstein, 2006), vocabulary and reading (Proctor, Dalton, & Grisham, 2007) and pronunciation (Cardoso, Collins, & White, 2012; Soler-Urzua, 2011). Despite their proven effectiveness, there is a need for…

  7. Cytotoxicity of Nanoliposomal Cisplatin Coated with Synthesized ...

    African Journals Online (AJOL)

    The characteristics of the nanoparticles were evaluated by dynamic light ... scanning electron microscopy (SEM). ... that of free cisplatin in human ovarian cancer cell line A2780CP. ... was -20 °C under inert gas stream [12]. The .... Figure 2: SEM image of nanoliposomal cisplatin ... The chemical structure of the synthesized.

  8. Concise total syntheses of (+/-)-strychnine and (+/-)-akuammicine.

    Science.gov (United States)

    Sirasani, Gopal; Paul, Tapas; Dougherty, William; Kassel, Scott; Andrade, Rodrigo B

    2010-05-21

    Concise total syntheses of Strychnos alkaloids strychnine (1) and akuammicine (2) have been realized in 13 and 6 operations, respectively. Key steps include (1) the vinylogous Mannich reaction; (2) a novel, sequential one-pot spirocyclization/intramolecular aza-Baylis-Hillman reaction; and (3) a Heck cyclization. The synthesis of 1 proceeds via the Wieland-Gumlich aldehyde (26).

  9. Method and apparatus for synthesizing filamentary structures

    Energy Technology Data Exchange (ETDEWEB)

    Height, Murray J [Somerville, MA; Howard, Jack B [Winchester, MA; Vandersande, John B [Newbury, MA

    2008-02-26

    Method and apparatus for producing filamentary structures. The structures include single-walled nanotubes. The method includes combusting hydrocarbon fuel and oxygen to establish a non-sooting flame and providing an unsupported catalyst to synthesize the filamentary structure in a post-flame region of the flame. Residence time is selected to favor filamentary structure growth.

  10. SYNTHESES AND PROPERTIES OF SOME ORGANOSILANE POLYMERS

    Institute of Scientific and Technical Information of China (English)

    ZHANG Xinghua; Robert West

    1984-01-01

    Some organosilane polymers with high molecular weights have been synthesized by cocondensation of organosilicon dihalide monomers with sodium metal in toluene. These polymers are both soluble in common solvents and meltable at lower temperatures, and can be molded, cast into films or drawn into fibers. Exposure of the solid polymers to ultraviolet light leads to degradation or crosslinking.

  11. Urea Decomposition Method to Synthesize Hydrotalcites

    Institute of Scientific and Technical Information of China (English)

    Piao Ping YANG; Jian Feng YU; Tong Hao WU; Guo Zong LIU; Tae Sun CHANG; Dong Koo LEE; Deug Hee CHO

    2004-01-01

    The urea decomposition property at high temperature has been used to control the pH value in the synthesis of layer compounds. The hydrotalcites of Mg-Al and Ni-Al with high crystallinity were synthesized by using this property.

  12. Digital Frequency Synthesizer For Radar Astronomy

    Science.gov (United States)

    Sadr, Ramin; Satorius, Edgar; Robinett, J. Loris, Jr.; Olson, Erlend

    1992-01-01

    Report discusses conceptual digital frequency synthesizer part of programmable local oscillator in radar-astronomy system. Phase must remain continuous during adjustments of frequency, phase noise must be low, and spectral purity must be high. Discusses theory of operation in some mathematical detail and presents new analysis of spectral purity of output.

  13. Synthesizing Waves from Animated Height Fields

    DEFF Research Database (Denmark)

    Nielsen, Michael Bang; Söderström, Andreas; Bridson, Robert

    2013-01-01

    for synthesizing Fourier-based ocean waves that match a previs input, allowing artists to quickly enhance the input wave animation with additional higher-frequency detail that moves consistently with the coarse waves, tweak the wave shapes to flatten troughs and sharpen peaks if desired (as is characteristic...

  14. Syntheses of very dense halogenated liquids.

    Science.gov (United States)

    Ye, Chengfeng; Shreeve, Jean'ne M

    2004-09-17

    A family of halogenated liquids with densities ranging from 1.95 to 2.80 g cm(-3) was readily synthesized by a one-pot procedure. These liquids exhibit characteristics of ionic liquids with melting/transition points lower than room temperature, long liquid ranges, and marked hydrolytic and thermal stabilities.

  15. FAO UN-REDD- INPE Joint Programme on Forest Monitoring Systems based on RS and GIS techniques

    Science.gov (United States)

    Jonckheere, I. G.; FAO UN-REDD MRV Team

    2010-12-01

    Capacity Development and Training for National Forest Monitoring Systems for Reducing Emissions from Deforestation and Forest Degradation in Developing Countries (REDD+) REDD+, which stands for ’Reducing Emissions from Deforestation and Forest Degradation in Developing Countries’ - is an effort to create a financial value for the carbon stored in forests, offering incentives for developing countries to reduce emissions from forested lands and invest in low-carbon paths to sustainable development. The UN-REDD Programme, a collaborative partnership between FAO, UNDP and UNEP launched in September 2008, supports countries to develop capacity to REDD+ and to implement a future REDD+ mechanism in a post-2012 climate regime. The programme works at both the national and global scale, through support mechanisms for country-driven REDD strategies and international consensus-building on REDD+ processes. The UN-REDD Programme gathers technical teams from around the world to develop common approaches, analyses and guidelines on issues such as measurement, reporting and verification (MRV) of carbon emissions and flows, remote sensing, and greenhouse gas inventories. Within the partnership, FAO supports countries on technical issues related to forestry and the development of cost effective and credible MRV processes for emission reductions. While at the international level, it fosters improved guidance on MRV approaches, including consensus on principles and guidelines for MRV and training programmes. It provides guidance on how best to design and implement REDD+, to ensure that forests continue to provide multiple benefits for livelihoods and biodiversity to societies while storing carbon at the same time. Other areas of work include national forest assessments and monitoring of in-country policy and institutional change. FAO and INPE (Brazilian Space Agency) have joint forces through a MoU signed last year in Copenhagen. A major joint programme has been agreed upon to set

  16. Bulk solitary waves in elastic solids

    Science.gov (United States)

    Samsonov, A. M.; Dreiden, G. V.; Semenova, I. V.; Shvartz, A. G.

    2015-10-01

    A short and object oriented conspectus of bulk solitary wave theory, numerical simulations and real experiments in condensed matter is given. Upon a brief description of the soliton history and development we focus on bulk solitary waves of strain, also known as waves of density and, sometimes, as elastic and/or acoustic solitons. We consider the problem of nonlinear bulk wave generation and detection in basic structural elements, rods, plates and shells, that are exhaustively studied and widely used in physics and engineering. However, it is mostly valid for linear elasticity, whereas dynamic nonlinear theory of these elements is still far from being completed. In order to show how the nonlinear waves can be used in various applications, we studied the solitary elastic wave propagation along lengthy wave guides, and remarkably small attenuation of elastic solitons was proven in physical experiments. Both theory and generation for strain soliton in a shell, however, remained unsolved problems until recently, and we consider in more details the nonlinear bulk wave propagation in a shell. We studied an axially symmetric deformation of an infinite nonlinearly elastic cylindrical shell without torsion. The problem for bulk longitudinal waves is shown to be reducible to the one equation, if a relation between transversal displacement and the longitudinal strain is found. It is found that both the 1+1D and even the 1+2D problems for long travelling waves in nonlinear solids can be reduced to the Weierstrass equation for elliptic functions, which provide the solitary wave solutions as appropriate limits. We show that the accuracy in the boundary conditions on free lateral surfaces is of crucial importance for solution, derive the only equation for longitudinal nonlinear strain wave and show, that the equation has, amongst others, a bidirectional solitary wave solution, which lead us to successful physical experiments. We observed first the compression solitary wave in the

  17. Activities report of the National Space Research Institute Plasma Laboratory for the period 1988/1989; Relatorio de atividades do Laboratorio Associado de Plasma do INPE no bienio 88/89

    Energy Technology Data Exchange (ETDEWEB)

    Ludwig, Gerson Otto

    1990-11-01

    This report describes the activities performed in the period 1988/1989 by the National Space Research Institute (INPE/SCT) Plasma Laboratory (LAP). The report presents the main results in the following research lines: plasma physics, plasma technology, and controlled thermonuclear fusion. (author). 49 figs., 3 tabs.

  18. Bulk locality and boundary creating operators

    Science.gov (United States)

    Nakayama, Yu; Ooguri, Hirosi

    2015-10-01

    We formulate a minimum requirement for CFT operators to be localized in the dual AdS. In any spacetime dimensions, we show that a general solution to the requirement is a linear superposition of operators creating spherical boundaries in CFT, with the dilatation by the imaginary unit from their centers. This generalizes the recent proposal by Miyaji et al. for bulk local operators in the three dimensional AdS. We show that Ishibashi states for the global conformal symmetry in any dimensions and with the imaginary di-latation obey free field equations in AdS and that incorporating bulk interactions require their superpositions. We also comment on the recent proposals by Kabat et al., and by H. Verlinde.

  19. Bulk Locality and Boundary Creating Operators

    CERN Document Server

    Nakayama, Yu

    2015-01-01

    We formulate a minimum requirement for CFT operators to be localized in the dual AdS. In any spacetime dimensions, we show that a general solution to the requirement is a linear superposition of operators creating spherical boundaries in CFT, with the dilatation by the imaginary unit from their centers. This generalizes the recent proposal by Miyaji et al. for bulk local operators in the three dimensional AdS. We show that Ishibashi states for the global conformal symmetry in any dimensions and with the imaginary dilatation obey free field equations in AdS and that incorporating bulk interactions require their superpositions. We also comment on the recent proposals by Kabat et al., and by H. Verlinde.

  20. Bulk locality and boundary creating operators

    Energy Technology Data Exchange (ETDEWEB)

    Nakayama, Yu [Walter Burke Institute for Theoretical Physics, California Institute of Technology, Pasadena, California 91125 (United States); Ooguri, Hirosi [Walter Burke Institute for Theoretical Physics, California Institute of Technology, Pasadena, California 91125 (United States); Kavli Institute for the Physics and Mathematics of the Universe, University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8583 (Japan)

    2015-10-19

    We formulate a minimum requirement for CFT operators to be localized in the dual AdS. In any spacetime dimensions, we show that a general solution to the requirement is a linear superposition of operators creating spherical boundaries in CFT, with the dilatation by the imaginary unit from their centers. This generalizes the recent proposal by Miyaji et al. for bulk local operators in the three dimensional AdS. We show that Ishibashi states for the global conformal symmetry in any dimensions and with the imaginary dilatation obey free field equations in AdS and that incorporating bulk interactions require their superpositions. We also comment on the recent proposals by Kabat et al., and by H. Verlinde.

  1. Bulk and shear viscosity in Hagedorn fluid

    Energy Technology Data Exchange (ETDEWEB)

    Tawfik, A.; Wahba, M. [Egyptian Center for Theoretical Physics (ECTP), MTI University, Faculty of Engineering, Cairo (Egypt)

    2010-11-15

    Assuming that the Hagedorn fluid composed of known particles and resonances with masses m <2 GeV obeys the first-order theory (Eckart) of relativistic fluid, we discuss the transport properties of QCD confined phase. Based on the relativistic kinetic theory formulated under the relaxation time approximation, expressions for bulk and shear viscosity in thermal medium of hadron resonances are derived. The relaxation time in the Hagedorn dynamical fluid exclusively takes into account the decay and eventually van der Waals processes. We comment on the in-medium thermal effects on bulk and shear viscosity and averaged relaxation time with and without the excluded-volume approach. As an application of these results, we suggest the dynamics of heavy-ion collisions, non-equilibrium thermodynamics and the cosmological models, which require thermo- and hydro-dynamics equations of state. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  2. Bulk and Shear Viscosity in Hagedorn Fluid

    CERN Document Server

    Tawfik, A

    2010-01-01

    Assuming that the Hagedorn fluid composed of known particles and resonances with masses $m<2\\,$GeV obeys the {\\it first-order} theory (Eckart) of relativistic fluid, we discuss the transport properties of QCD confined phase. Based on the relativistic kinetic theory formulated under the relaxation time approximation, expressions for bulk and shear viscosity in thermal medium are derived. The relaxation time in the Hagedorn dynamical fluid exclusively takes into account the decay and eventually van der Waals processes. We comment on the {\\it in-medium} thermal effects on bulk and shear viscosities and averaged relaxation time with and without the excluded-volume approach. As an application of these results, we suggest the dynamics of heavy-ion collisions, non-equlibrium thermodynamics and the cosmological models, which require thermo and hydrodynamics equations of state.

  3. Portable design rules for bulk CMOS

    Science.gov (United States)

    Griswold, T. W.

    1982-01-01

    It is pointed out that for the past several years, one school of IC designers has used a simplified set of nMOS geometric design rules (GDR) which is 'portable', in that it can be used by many different nMOS manufacturers. The present investigation is concerned with a preliminary set of design rules for bulk CMOS which has been verified for simple test structures. The GDR are defined in terms of Caltech Intermediate Form (CIF), which is a geometry-description language that defines simple geometrical objects in layers. The layers are abstractions of physical mask layers. The design rules do not presume the existence of any particular design methodology. Attention is given to p-well and n-well CMOS processes, bulk CMOS and CMOS-SOS, CMOS geometric rules, and a description of the advantages of CMOS technology.

  4. Fully antisymmetrised dynamics for bulk fermion systems

    CERN Document Server

    Vantournhout, Klaas

    2011-01-01

    The neutron star's crust and mantel are typical examples of non-uniform bulk systems with spacial localisations. When modelling such systems at low temperatures, as is the case in the crust, one has to work with antisymmetrised many-body states to get the correct fermion behaviour. Fermionic molecular dynamics, which works with an antisymmetrised product of localised wave packets, should be an appropriate choice. Implementing periodic boundary conditions into the fermionic molecular dynamics formalism would allow the study of the neutron star's crust as a bulk quantum system. Unfortunately, the antisymmetrisation is a non-local entanglement which reaches far out of the periodically repeated unit cell. In this proceeding, we give a brief overview how periodic boundary conditions and fermionic molecular dynamics can be combined without truncating the long-range many-body correlation induced by the antisymmetry of the many-body state.

  5. Large bulk Micromegas detectors for TPC applications

    CERN Document Server

    Anvar, S; Boyer, M; Beucher, J; Calvet, D; Colas, P; De La Broise, X; Delagnes, E; Delbart, A; Druillole, F; Emery, S; Giganti, C; Giomataris, I; Mazzucato, E; Monmarthe, E; Nizery, F; Pierre, F; Ritou, J L; Sarrat, A; Zito, M; Catanesi, M G; Radicioni, E; De Oliveira, R; Blondel, A; Di Marco, M; Ferrere, D; Perrin, E; Ravonel, M; Jover, G; Lux, T; Rodriguez, A Y; Sanchez, F; Cervera, A; Hansen, C; Monfregola, L

    2009-01-01

    A large volume TPC will be used in the near future in a variety of experiments including T2K. The bulk Micromegas detector for this TPC is built using a novel production technique particularly suited for compact, thin and robust low mass detectors. The capability to pave a large surface with a simple mounting solution and small dead space is of particular interest for these applications. We have built several large bulk Micromegas detectors () and we have tested one in the former HARP field cage with a magnetic field. Prototypes cards of the T2K front end electronics, based on the AFTER ASIC chip, have been used in this TPC test for the first time. Cosmic ray data have been acquired in a variety of experimental conditions. Good detector performances, space point resolution and energy loss measurement have been achieved.

  6. Bulk micromegas detectors for large TPC applications

    CERN Document Server

    Bouchez, J; Cavata, Ch; Colas, P; De La Broise, X; Delbart, A; Giganon, Arnaud; Giomataris, Ioanis; Graffin, P; Mols, J Ph; Pierre, F; Ritou, J L; Sarrat, A; Virique, E; Zito, M; Radicioni, E; De Oliveira, R; Dumarchez, J; Abgrall, N; Bene, P; Blondel, A; Cervera-Villanueva, Anselmo; Ferrère, D; Maschiocchi, F; Perrin, E; Richeux, J P; Schroeter, R; Jover, G; Lux,; Rodriguez, A Y; Sánchez, F

    2007-01-01

    A large volume TPC will be used in the near future in a variety of experiments including T2K. The bulk Micromegas detector for this TPC is built using a novel production technique particularly suited for compact and robust low mass detectors. The capability to pave a large surface with a simple mounting solution and small dead space between modules is of particular interest for these applications. We have built several large bulk Micromegas detectors and we have tested them in the former HARP field cage setup with a magnetic field. Cosmic ray data have been acquired in a variety of experimental conditions. Good detector performances and space point resolution have been achieved.

  7. Effective pure states for bulk quantum computation

    Energy Technology Data Exchange (ETDEWEB)

    Knill, E.; Chuang, I.; Laflamme, R.

    1997-11-01

    In bulk quantum computation one can manipulate a large number of indistinguishable quantum computers by parallel unitary operations and measure expectation values of certain observables with limited sensitivity. The initial state of each computer in the ensemble is known but not pure. Methods for obtaining effective pure input states by a series of manipulations have been described by Gershenfeld and Chuang (logical labeling) and Corey et al. (spatial averaging) for the case of quantum computation with nuclear magnetic resonance. We give a different technique called temporal averaging. This method is based on classical randomization, requires no ancilla qubits and can be implemented in nuclear magnetic resonance without using gradient fields. We introduce several temporal averaging algorithms suitable for both high temperature and low temperature bulk quantum computing and analyze the signal to noise behavior of each.

  8. Modeling direct interband tunneling. I. Bulk semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Pan, Andrew, E-mail: pandrew@ucla.edu [Department of Electrical Engineering, University of California, Los Angeles, Los Angeles, California 90095 (United States); Chui, Chi On [Department of Electrical Engineering, University of California, Los Angeles, Los Angeles, California 90095 (United States); California NanoSystems Institute, University of California, Los Angeles, Los Angeles, California 90095 (United States)

    2014-08-07

    Interband tunneling is frequently studied using the semiclassical Kane model, despite uncertainty about its validity. Revisiting the physical basis of this formula, we find that it neglects coupling to other bands and underestimates transverse tunneling. As a result, significant errors can arise at low and high fields for small and large gap materials, respectively. We derive a simple multiband tunneling model to correct these defects analytically without arbitrary parameters. Through extensive comparison with band structure and quantum transport calculations for bulk InGaAs, InAs, and InSb, we probe the accuracy of the Kane and multiband formulas and establish the superiority of the latter. We also show that the nonlocal average electric field should be used when applying either of these models to nonuniform potentials. Our findings are important for efficient analysis and simulation of bulk semiconductor devices involving tunneling.

  9. Towards a reconstruction of general bulk metrics

    Science.gov (United States)

    Engelhardt, Netta; Horowitz, Gary T.

    2017-01-01

    We prove that the metric of a general holographic spacetime can be reconstructed (up to an overall conformal factor) from distinguished spatial slices—‘light-cone cuts’—of the conformal boundary. Our prescription is covariant and applies to bulk points in causal contact with the boundary. Furthermore, we describe a procedure for determining the light-cone cuts corresponding to bulk points in the causal wedge of the boundary in terms of the divergences of correlators in the dual field theory. Possible extensions for determining the conformal factor and including the cuts of points outside of the causal wedge are discussed. We also comment on implications for subregion/subregion duality.

  10. Metal reduction at bulk chemical filtration

    Science.gov (United States)

    Umeda, Toru; Daikoku, Shusaku; Tsuzuki, Shuichi; Murakami, Tetsuya

    2017-03-01

    OK73 thinner and cyclohexanone, both of which were spiked with metals were passed through Nylon 6,6 filter, varying flow rate, which include the conditions of both point-of-use and bulk filtrations. The influent and effluent metal concentrations were measured using ICP-MS for metal removal efficiency of the filtration. As a result, removal efficiency for some metals descended depending on the flow rate, while others maintained. Slower flow rate is recommended to maintain low metal concentration in bulk filtration based on the result. Metals in cyclohexanone were reduced at higher efficiency than in OK73 thinner, agrees with a metal removal model of hydrophilic adsorbent in organic solvent, evidenced in our previous paper. Further, metal reduction on 300 mm φ Si wafer after coating organic solvents with Nylon 6,6 filtration was evidenced with TREX analysis.

  11. Multilayer Integrated Film Bulk Acoustic Resonators

    CERN Document Server

    Zhang, Yafei

    2013-01-01

    Multilayer Integrated Film Bulk Acoustic Resonators mainly introduces the theory, design, fabrication technology and application of a recently developed new type of device, multilayer integrated film bulk acoustic resonators, at the micro and nano scale involving microelectronic devices, integrated circuits, optical devices, sensors and actuators, acoustic resonators, micro-nano manufacturing, multilayer integration, device theory and design principles, etc. These devices can work at very high frequencies by using the newly developed theory, design, and fabrication technology of nano and micro devices. Readers in fields of IC, electronic devices, sensors, materials, and films etc. will benefit from this book by learning the detailed fundamentals and potential applications of these advanced devices. Prof. Yafei Zhang is the director of the Ministry of Education’s Key Laboratory for Thin Films and Microfabrication Technology, PRC; Dr. Da Chen was a PhD student in Prof. Yafei Zhang’s research group.

  12. Microfabricated bulk wave acoustic bandgap device

    Science.gov (United States)

    Olsson, Roy H.; El-Kady, Ihab F.; McCormick, Frederick; Fleming, James G.; Fleming, Carol

    2010-06-08

    A microfabricated bulk wave acoustic bandgap device comprises a periodic two-dimensional array of scatterers embedded within the matrix material membrane, wherein the scatterer material has a density and/or elastic constant that is different than the matrix material and wherein the periodicity of the array causes destructive interference of the acoustic wave within an acoustic bandgap. The membrane can be suspended above a substrate by an air or vacuum gap to provide acoustic isolation from the substrate. The device can be fabricated using microelectromechanical systems (MEMS) technologies. Such microfabricated bulk wave phononic bandgap devices are useful for acoustic isolation in the ultrasonic, VHF, or UHF regime (i.e., frequencies of order 1 MHz to 10 GHz and higher, and lattice constants of order 100 .mu.m or less).

  13. Dissolution of bulk specimens of silicon nitride

    Science.gov (United States)

    Davis, W. F.; Merkle, E. J.

    1981-01-01

    An accurate chemical characterization of silicon nitride has become important in connection with current efforts to incorporate components of this material into advanced heat engines. However, there are problems concerning a chemical analysis of bulk silicon nitride. Current analytical methods require the pulverization of bulk specimens. A pulverization procedure making use of grinding media, on the other hand, will introduce contaminants. A description is given of a dissolution procedure which overcomes these difficulties. It has been found that up to at least 0.6 g solid pieces of various samples of hot pressed and reaction bonded silicon nitride can be decomposed in a mixture of 3 mL hydrofluoric acid and 1 mL nitric acid overnight at 150 C in a Parr bomb. High-purity silicon nitride is completely soluble in nitric acid after treatment in the bomb. Following decomposition, silicon and hydrofluoric acid are volatilized and insoluble fluorides are converted to a soluble form.

  14. Hierarchical Self-Assembled Structures from POSS-Containing Block Copolymers Synthesized by Living Anionic Polymerization

    Energy Technology Data Exchange (ETDEWEB)

    Hirai, Tomoyasu; Leolukman, Melvina; Jin, Sangwoo; Goseki, Raita; Ishida, Yoshihito; Kakimoto, Masa-aki; Hayakawa, Teruaki; Ree, Moonhor; Gopalan, Padma; (Tokyo Inst. Tech.); (UW); (POSTECH)

    2010-03-16

    Two kinds of polyhedral oligomeric silsesquioxane (POSS)-containing block copolymers (BCPs), namely PS-b-PMAPOSS and PMMA-b-PMAPOSS, were synthesized by living anionic polymerization. A wide range of molecular weights were obtained with a very narrow polydispersity index of less than 1.09. The bulk samples prepared by slow evaporation from a polymer solution in chloroform exhibit well-defined microphase-separated structures with long-range order. Thermal annealing induced hierarchical structures consisting of a smaller length scale ordered crystalline POSS domains within the larger microphase-separated structures. We report detailed structural characterization of these hierarchical structures in bulk and thin films by transmission electron microscopy and grazing incidence wide-angle X-ray scattering (GIWAXS). On the basis of this structural analysis, we propose a model for the formation of an orthorhombic lattice structure through the aggregation of POSS segments which formed a helix-like structure.

  15. Raman characterization of bulk ferromagnetic nanostructured graphite

    Energy Technology Data Exchange (ETDEWEB)

    Pardo, Helena, E-mail: hpardo@fq.edu.uy [Centro NanoMat, Polo Tecnologico de Pando, Facultad de Quimica, Universidad de la Republica, Cno. Aparicio Saravia s/n, 91000, Pando, Canelones (Uruguay); Crystallography, Solid State and Materials Laboratory (Cryssmat-Lab), DETEMA, Facultad de Quimica, Universidad de la Republica, Gral. Flores 2124, P.O. Box 1157, Montevideo (Uruguay); Divine Khan, Ngwashi [Mantfort University, Leicester (United Kingdom); Faccio, Ricardo [Centro NanoMat, Polo Tecnologico de Pando, Facultad de Quimica, Universidad de la Republica, Cno. Aparicio Saravia s/n, 91000, Pando, Canelones (Uruguay); Crystallography, Solid State and Materials Laboratory (Cryssmat-Lab), DETEMA, Facultad de Quimica, Universidad de la Republica, Gral. Flores 2124, P.O. Box 1157, Montevideo (Uruguay); Araujo-Moreira, F.M. [Grupo de Materiais e Dispositivos-CMDMC, Departamento de Fisica e Engenharia Fisica, UFSCar, Caixa Postal 676, 13565-905, Sao Carlos SP (Brazil); Fernandez-Werner, Luciana [Centro NanoMat, Polo Tecnologico de Pando, Facultad de Quimica, Universidad de la Republica, Cno. Aparicio Saravia s/n, 91000, Pando, Canelones (Uruguay); Crystallography, Solid State and Materials Laboratory (Cryssmat-Lab), DETEMA, Facultad de Quimica, Universidad de la Republica, Gral. Flores 2124, P.O. Box 1157, Montevideo (Uruguay)

    2012-08-15

    Raman spectroscopy was used to characterize bulk ferromagnetic graphite samples prepared by controlled oxidation of commercial pristine graphite powder. The G:D band intensity ratio, the shape and position of the 2D band and the presence of a band around 2950 cm{sup -1} showed a high degree of disorder in the modified graphite sample, with a significant presence of exposed edges of graphitic planes as well as a high degree of attached hydrogen atoms.

  16. On bulk viscosity and moduli decay

    OpenAIRE

    M. Laine

    2010-01-01

    This pedagogically intended lecture, one of four under the header "Basics of thermal QCD", reviews an interesting relationship, originally pointed out by Bodeker, that exists between the bulk viscosity of Yang-Mills theory (of possible relevance to the hydrodynamics of heavy ion collision experiments) and the decay rate of scalar fields coupled very weakly to a heat bath (appearing in some particle physics inspired cosmological scenarios). This topic serves, furthermore, as a platform on whic...

  17. Depleted bulk heterojunction colloidal quantum dot photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Barkhouse, D.A.R. [Department of Electrical and Computer Engineering, University of Toronto, 10 King' s College Road, Toronto, Ontario M5S 3G4 (Canada); IBM Thomas J. Watson Research Center, Kitchawan Road, Yorktown Heights, NY, 10598 (United States); Debnath, Ratan; Kramer, Illan J.; Zhitomirsky, David; Levina, Larissa; Sargent, Edward H. [Department of Electrical and Computer Engineering, University of Toronto, 10 King' s College Road, Toronto, Ontario M5S 3G4 (Canada); Pattantyus-Abraham, Andras G. [Department of Electrical and Computer Engineering, University of Toronto, 10 King' s College Road, Toronto, Ontario M5S 3G4 (Canada); Quantum Solar Power Corporation, 1055 W. Hastings, Ste. 300, Vancouver, BC, V6E 2E9 (Canada); Etgar, Lioz; Graetzel, Michael [Laboratory for Photonics and Interfaces, Institute of Chemical Sciences and Engineering, School of Basic Sciences, Swiss Federal Institute of Technology, CH-1015 Lausanne (Switzerland)

    2011-07-26

    The first solution-processed depleted bulk heterojunction colloidal quantum dot solar cells are presented. The architecture allows for high absorption with full depletion, thereby breaking the photon absorption/carrier extraction compromise inherent in planar devices. A record power conversion of 5.5% under simulated AM 1.5 illumination conditions is reported. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  18. Depleted Bulk Heterojunction Colloidal Quantum Dot Photovoltaics

    KAUST Repository

    Barkhouse, D. Aaron R.

    2011-05-26

    The first solution-processed depleted bulk heterojunction colloidal quantum dot solar cells are presented. The architecture allows for high absorption with full depletion, thereby breaking the photon absorption/carrier extraction compromise inherent in planar devices. A record power conversion of 5.5% under simulated AM 1.5 illumination conditions is reported. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. Effects of bulk viscosity on cosmological evolution

    CERN Document Server

    Pimentel, L O; Pimentel, L O; Diaz-Rivera, L M

    1994-01-01

    Abstract:The effect of bulk viscisity on the evolution of the homogeneous and isotropic cosmological models is considered. Solutions are found, with a barotropic equation of state, and a viscosity coefficient that is proportional to a power of the energy density of the universe. For flat space, power law expansions, related to extended inflation are found as well as exponential solutions, related to old inflation; also a solution with expansion that is an exponential of an exponential of the time is found.

  20. Modeling of Microimprinting of Bulk Metallic Glasses

    Institute of Scientific and Technical Information of China (English)

    Ming CHENG; John A. Wert

    2006-01-01

    A finite element analysis (FEA) model has been developed to analyze microimprinting of bulk metallic glasses (BMG) near the glass transition temperature (Tg). The results reveal an approximately universal imprinting response for BMG, independent of surface feature length scale. The scale-independent nature of BMG imprinting derives from the flow characteristics of BMG in the temperature range above Tg. It also shows that the lubrication condition has a mild influence on BMG imprinting in the temperature range above Tg.

  1. Study on silicon nanocrystals and polymer bulk heterojunction structures

    Science.gov (United States)

    Sugaya, Michihiro; Ding, Yi; Zhou, Shu; Nozaki, Tomohiro

    2015-09-01

    Silicon nanocrystals (SiNCs) and semiconductor-polymer (P3HT) nanostructured thin film is investigated for better understanding of bulk heterojunction structure of hybrid solar cell and improving its photon-to-electron conversion performance. SiNCs are synthesized by VHF plasma CVD using silicon tetrachloride. SiNC thin film transistor (TFT) was fabricated to investigate carrier transport properties of SiNC network. As a result, hydrogen-terminated SiNCs behave as n-type semiconductor materials, and electron mobility of SiNC network is improved dramatically. In contrast, chlorine-terminated SiNCs behave as metallic materials and show poor electron transport property because of surface doping effect: electrons are not flow over the SiNC network due to a large electronegativity of chlorine. Additionally, when the chlorine-terminated SiNCs are blended with P3HT, new peaks appear in FTIR absorption spectrum. The result implies that the thiophene structure, which forms the hole transporting pathway, may be damaged by highly reactive surface chlorine and therefore the hole transport property of Cl:SiNCs/P3HT blended film would be deteriorated dramatically. These results are well correlated with Cl- and H-terminated/P3HT hybrid solar cell performance.

  2. Bulk viscous cosmology in early Universe

    Indian Academy of Sciences (India)

    C P Singh

    2008-07-01

    The effect of bulk viscosity on the early evolution of Universe for a spatially homogeneous and isotropic Robertson-Walker model is considered. Einstein's field equations are solved by using `gamma-law' equation of state = ( - 1)ρ, where the adiabatic parameter gamma () depends on the scale factor of the model. The `gamma' function is defined in such a way that it describes a unified solution of early evolution of the Universe for inflationary and radiation-dominated phases. The fluid has only bulk viscous term and the coefficient of bulk viscosity is taken to be proportional to some power function of the energy density. The complete general solutions have been given through three cases. For flat space, power-law as well as exponential solutions are found. The problem of how the introduction of viscosity affects the appearance of singularity, is briefly discussed in particular solutions. The deceleration parameter has a freedom to vary with the scale factor of the model, which describes the accelerating expansion of the Universe.

  3. Pseudo-Riemannian Universe from Euclidean bulk

    CERN Document Server

    Vasilić, Milovan

    2015-01-01

    I develop the idea that our world is a brane-like object embedded in Euclidean bulk. In its ground state, the brane constituent matter is assumed to be homogeneous and isotropic, and of negligible influence on the bulk geometry. No action functional is initially specified. Instead, the brane dynamics is derived from the universally valid stress-energy conservation equations. The present work studies the cosmology of a $3$-sphere in the $5$-dimensional Euclidean bulk. It is shown that the conventional equation of state $p=\\alpha\\rho$ is universal in the sector of small energy densities, and so is the resulting brane dynamics. The inequality $\\alpha<0$ is found to be a necessary condition for the existence of a stable ground state of the Universe. It is demonstrated that the generic braneworld physics rules out the Big Bang cosmology, and in that matter, any cosmology of finite lifetime. I also demonstrate that stable brane vibrations satisfy Klein-Gordon-like equation with an effective metric of Minkowski s...

  4. Molecular imprinting of bulk, microporous silica

    Science.gov (United States)

    Katz, Alexander; Davis, Mark E.

    2000-01-01

    Molecular imprinting aims to create solid materials containing chemical functionalities that are spatially organized by covalent or non-covalent interactions with imprint (or template) molecules during the synthesis process. Subsequent removal of the imprint molecules leaves behind designed sites for the recognition of small molecules, making the material ideally suited for applications such as separations, chemical sensing and catalysis. Until now, the molecular imprinting of bulk polymers and polymer and silica surfaces has been reported, but the extension of these methods to a wider range of materials remains problematic. For example, the formation of substrate-specific cavities within bulk silica, while conceptually straightforward, has been difficult to accomplish experimentally. Here we describe the imprinting of bulk amorphous silicas with single aromatic rings carrying up to three 3-aminopropyltriethoxysilane side groups; this generates and occupies microporosity and attaches functional organic groups to the pore walls in a controlled fashion. The triethoxysilane part of the molecules' side groups is incorporated into the silica framework during sol-gel synthesis, and subsequent removal of the aromatic core creates a cavity with spatially organized aminopropyl groups covalently anchored to the pore walls. We find that the imprinted silicas act as shape-selective base catalysts. Our strategy can be extended to imprint other functional groups, which should give access to a wide range of functionalized materials.

  5. Bulk Higgs with a heavy diphoton signal

    Science.gov (United States)

    Frank, Mariana; Pourtolami, Nima; Toharia, Manuel

    2017-02-01

    We consider scenarios of warped extra dimensions with all matter fields in the bulk and in which both the hierarchy and the flavor puzzles of the Standard Model are addressed. Inspired by the puzzling excess of diphoton events at 750 GeV reported in the early LHC Run II data (since then understood as a statistical excess), we consider here the general question as to whether the simplest extra-dimensional extension of the Standard Model Higgs sector, i.e., a five-dimensional bulk Higgs doublet, can lead to an intermediate mass resonance (between 500 GeV and 1.5 TeV) of which the first signature would be the presence of diphoton events. This surprising phenomenology can happen if the resonance is the lightest C P -odd state coming from the Higgs sector. No new matter content is required, the only new ingredient being the presence of (positive) brane localized kinetic terms associated to the five-dimensional bulk Higgs (which reduce the mass of the C P -odd states). Production and decay of this resonance can naturally give rise to observable diphoton signals, keeping dijet production under control, with very low ZZ and WW signals and with a highly reduced top pair production in an important region of parameter space. We use the 750 GeV excess as an example case scenario.

  6. Bulk Rashba Semiconductors and Related Quantum Phenomena.

    Science.gov (United States)

    Bahramy, Mohammad Saeed; Ogawa, Naoki

    2017-03-29

    Bithmuth tellurohalides BiTeX (X = Cl, Br and I) are model examples of bulk Rashba semiconductors, exhibiting a giant Rashba-type spin splitting among their both valence and conduction bands. Extensive spectroscopic and transport experiments combined with the state-of-the-art first-principles calculations have revealed many unique quantum phenomena emerging from the bulk Rashba effect in these systems. The novel features such as the exotic inter- and intra-band optical transitions, enhanced magneto-optical response, divergent orbital dia-/para-magnetic susceptibility and helical spin textures with a nontrivial Berry's phase in the momentum space are among the salient discoveries, all arising from this effect. Also, it is theoretically proposed and indications have been experimentally reported that bulk Rashba semiconductors such as BiTeI have the capability of becoming a topological insulator under the application of a hydrostatic pressure. Here, we overview these studies and show that BiTeX are an ideal platform to explore the next aspects of quantum matter, which could ultimately be utilized to create spintronic devices with novel functionalities.

  7. Cosmological Implications of QGP Bulk Viscosity

    CERN Document Server

    Anand, Sampurn; Bhatt, Jitesh R

    2016-01-01

    Recent studies of the hot QCD matter indicate that the bulk viscosity ($\\zeta$) of quark-gluon plasma (QGP) rises sharply near the critical point of the QCD phase transition. In this work, we show that such a sharp rise of the bulk viscosity will lead to an effective negative pressure near the critical temperature, $T_{c}$ which in turn drives the Universe to inflate. This inflation has a natural graceful exist when the viscous effect evanesce. We estimate that, depending upon the peak value of $\\zeta$, universe expands by a factor of $10$ to $80$ times in a very short span ($\\Delta t\\sim 10^{-8}$ seconds). Another important outcome of the bulk viscosity dominated dynamics is the cavitation of QGP around $T \\sim 1.5T_{c}$. This would lead to the phenomenon of formation of cavitation bubbles within the QGP phase. The above scenario is independent of the order of QCD phase transition. We delineate some of the important cosmological consequences of the inflation and the cavitation.

  8. Evidence for Bulk Ripplocations in Layered Solids

    Science.gov (United States)

    Gruber, Jacob; Lang, Andrew C.; Griggs, Justin; Taheri, Mitra L.; Tucker, Garritt J.; Barsoum, Michel W.

    2016-09-01

    Plastically anisotropic/layered solids are ubiquitous in nature and understanding how they deform is crucial in geology, nuclear engineering, microelectronics, among other fields. Recently, a new defect termed a ripplocation–best described as an atomic scale ripple–was proposed to explain deformation in two-dimensional solids. Herein, we leverage atomistic simulations of graphite to extend the ripplocation idea to bulk layered solids, and confirm that it is essentially a buckling phenomenon. In contrast to dislocations, bulk ripplocations have no Burgers vector and no polarity. In graphite, ripplocations are attracted to other ripplocations, both within the same, and on adjacent layers, the latter resulting in kink boundaries. Furthermore, we present transmission electron microscopy evidence consistent with the existence of bulk ripplocations in Ti3SiC2. Ripplocations are a topological imperative, as they allow atomic layers to glide relative to each other without breaking the in-plane bonds. A more complete understanding of their mechanics and behavior is critically important, and could profoundly influence our current understanding of how graphite, layered silicates, the MAX phases, and many other plastically anisotropic/layered solids, deform and accommodate strain.

  9. Syntheses and studies of organosilicon compounds

    Energy Technology Data Exchange (ETDEWEB)

    Xie, Ren [Iowa State Univ., Ames, IA (United States)

    1999-02-12

    The syntheses of polycarbosilanes and polysilanes as silicon carbide ceramic precursors have been active research areas in the Barton Research Group. In this thesis, the work is focused on the preparation of polycarbosilanes and polysilanes as stoichiometric silicon carbide precursor polymers. The syntheses of the precursor polymers are discussed and the conversions of these precursors to silicon carbide via pyrolysis are reported. The XRD pattern and elemental analyses of the resulting silicon carbide ceramics are presented. Silicon monoxide is an important intermediate in the production of silicon metal. The existence of silicon monoxide in gap phase has been widely accepted. In the second part of this thesis, the generation of gaseous silicon monoxide in four different reactors and the reactions of gaseous silicon monoxide towards organic compounds are discussed.

  10. High-strength Zr-based bulk amorphous alloys containing nanocrystalline and nanoquasicrystalline particles

    Directory of Open Access Journals (Sweden)

    A Inoue, C Fan, J Saida and T Zhang

    2000-01-01

    Full Text Available It was recently found that the addition of special elements leading to the deviation from the three empirical rules for the achievement of high glass-forming ability causes new mixed structures consisting of the amorphous phase containing nanoscale compound or quasicrystal particles in Zr–Al–Ni–Cu–M (M=Ag, Pd, Au, Pt or Nb bulk alloys prepared by the copper mold casting and squeeze casting methods. In addition, the mechanical strength and ductility of the nonequilibrium phase bulk alloys are significantly improved by the formation of the nanostructures as compared with the corresponding amorphous single phase alloys. The composition ranges, formation factors, preparation processes, unique microstructures and improved mechanical properties of the nanocrystalline and nanoquasicrystalline Zr-based bulk alloys are reviewed on the basis of our recent results reported over the last two years. The success of synthesizing the novel nonequilibrium, high-strength bulk alloys with good mechanical properties is significant for the future progress of basic science and engineering.

  11. Diskretfrequente Synthese von Nachhall-Prozessen

    OpenAIRE

    Boesnecker, Robert

    2008-01-01

    Die Arbeit verfolgt einen neuartigen Ansatz zur digitalen Nachhallsynthese. Es wird dabei von folgender Beobachtung ausgegangen: Ruft man in ein Klavier, dessen Saiten unbedämpft sind, so antwortet das Instrument mit einem aus diskreten Einzeltönen bestehenden Nachklang, der ähnlich wie ein raumakustischer Nachhall klingt. Verbreitert man bei einer diskretfrequenten Synthese nun die spektrale Breite eines jeden "Klaviertons" auf einen schmalbandigen Bandpass, so dass nicht 12 Töne, sondern 12...

  12. SYNTHESES AND CHARACTERIZATIONS OF HYPERBRANCHED POLYPHENYLENES

    Institute of Scientific and Technical Information of China (English)

    Han Peng; Hong-chen Dong; Yu-ping Dong; De-min Jia; Ben-zhong Tang

    2004-01-01

    New hyperbranched polyphenylenes with high molecular weights are synthesized by the copolycyclotrimerizations of 1,4-diethynylbenzene (I) with phenylacetylene (A), 1-octyne (B), and 1-dodecyne (C) catalyzed by TaCl5-Ph4Sn. The polymers are completely soluble in common solvents such as toluene, THF, chloroform, and dichloromethane. The polymers are characterized by spectroscopic methods and all of the polymers give satisfactory analysis data corresponding to their expected molecular structures.

  13. Predictions of synthesizing element 119 and 120

    Institute of Scientific and Technical Information of China (English)

    2011-01-01

    The evaporation residue cross sections of synthesizing superheavy nuclei Z=119, 120 are calculated by different sets of master equations with different dynamical variables. Two methods basically predicted similar results that the Ca induced hot fusion can 48 produce element 119 easier than produce 120, and the evaporation residue cross sections for 119 are detectable by current advanced techniques, while the evaporation residue cross sections are below 0.1 pb for producing element 120.

  14. Tailoring Magnetic Properties in Bulk Nanostructured Solids

    Science.gov (United States)

    Morales, Jason Rolando

    Important magnetic properties and behaviors such as coercivity, remanence, susceptibility, energy product, and exchange coupling can be tailored by controlling the grain size, composition, and density of bulk magnetic materials. At nanometric length scales the grain size plays an increasingly important role since magnetic domain behavior and grain boundary concentration determine bulk magnetic behavior. This has spurred a significant amount of work devoted to developing magnetic materials with nanometric features (thickness, grain/crystallite size, inclusions or shells) in 0D (powder), 1D (wires), and 2D (thin films) materials. Large 3D nanocrystalline materials are more suitable for many applications such as permanent magnets, magneto-optical Faraday isolators etc. Yet there are relatively few successful demonstrations of 3D magnetic materials with nanoscale influenced properties available in the literature. Making dense 3D bulk materials with magnetic nanocrystalline microstructures is a challenge because many traditional densification techniques (HIP, pressureless sintering, etc.) move the microstructure out of the "nano" regime during densification. This dissertation shows that the Current Activated Pressure Assisted Densification (CAPAD) method, also known as spark plasma sintering, can be used to create dense, bulk, magnetic, nanocrystalline solids with varied compositions suited to fit many applications. The results of my research will first show important implications for the use of CAPAD for the production of exchange-coupled nanocomposite magnets. Decreases in grain size were shown to have a significant role in increasing the magnitude of exchange bias. Second, preferentially ordered bulk magnetic materials were produced with highly anisotropic material properties. The ordered microstructure resulted in changing magnetic property magnitudes (ex. change in coercivity by almost 10x) depending on the relative orientation (0° vs. 90°) of an externally

  15. A comparative study on biologically and chemically synthesized silver nanoparticles induced Heat Shock Proteins on fresh water fish Oreochromis niloticus.

    Science.gov (United States)

    Girilal, M; Krishnakumar, V; Poornima, Paramasivan; Mohammed Fayaz, A; Kalaichelvan, P T

    2015-11-01

    The wide applicability of silver nanoparticles in medicine and pharmaceutical industries leads to its over exploitation and thus contaminating our environment. Majority of these nanoscale dimension particles finally accumulates in fresh water and marine ecosystem. As the nanoparticles behave entirely different from its corresponding bulk material, a better understanding of their environmental impacts in aquatic ecosystems is inevitable. The study was focused on a comparative stress physiology analysis of chemically synthesized silver nanoparticles and biogenic silver nanoparticles. Half maximal inhibitory concentration of biologically synthesized and chemically synthesized nanoparticles was found out (30μg/mL and 20μg/mL respectively). The Heat Shock Protein (HSP70) secretion was analysed in the fresh water fish Oreochromis niloticus after exposing to different concentrations of biologically and chemically synthesized silver nanoparticles along with the silver in its ionic form. The intense immune-histochemical staining of fish tissues (muscle, kidney and liver) analyzed proportionately reflected the stress created. The colour intensity was directly proportional to the stress created or the stress protein released. High level of HSP70 expression was observed in all of the fish tissues exposed to silver ions and chemically synthesized silver nanoparticles, when compared to that of biologically synthesized. The results revealed the significance of comparatively safe and less toxic biogenic nanoparticles compared to the chemically synthesized.

  16. Depósito mediante ablación con láser de láminas delgadas de (Pb,La TiO3 y ZnO sobre (100 InP

    Directory of Open Access Journals (Sweden)

    Román, E.

    1999-10-01

    Full Text Available The oriented growth of PbLaTiO3 (PLT and ZnO thin films on (100InP has been studied, including the influence of buffer oxide layers (CeO2, ZrO2, SrO, YSZ, MgO, and SrTiO3 on the final texture of PLT film obtained. In each case the oxygen pressure, substrate temperature, energy fluence and substrate surface conditions required to obtain a crystalline and preferentially oriented phase have been established. The composition and morphological changes related to the PLT/YSZ/(100InP heterostructure profile have been studied in order to investigate the processes involved in the growth of these oxides on (100InP.Se ha estudiado el proceso de depósito mediante ablación con láser de láminas delgadas de PbTiO3 modificado con La (PLT y ZnO sobre (100InP. Para el PLT se han depositado láminas intermedias de óxidos dieléctricos (CeO2, ZrO2, SrO, YSZ, MgO, y SrTiO3 necesarias para la protección de la superficie del substrato. En cada caso se han establecido las condiciones experimentales (presión de oxígeno, temperatura del substrato, densidad de energía del pulso láser y limpieza de la superficie del substrato necesarias para obtener láminas cristalinas con orientación preferente. En la heteroestructura PLT/YSZ/(100InP se estudian los cambios de composición y morfología a lo largo del perfil de la heteroestructura, a fin de investigar los procesos involucrados en el crecimiento de estos óxidos sobre el (100InP.

  17. Ductile Bulk Aluminum-Based Alloy with Good Glass-Forming Ability and High Strength

    Institute of Scientific and Technical Information of China (English)

    ZHUO Long-Chao; PANG Shu-Jie; WANG Hui; ZHANG Tao

    2009-01-01

    Based on a new approach for designing glassy alloy compositions,bulk Al-based alloys with good glass-forming ability (GFA) are synthesized.The cast Al86Si0.5Ni4.06Co2.94 Y6Sc0.5 rod with a diameter of 1 mm shows almost fully amorphous structure besides about 5% fcc-Al nucleated in the center of the rod.The bulk alloy with high Al concentration exhibits an ultrahigh yield strength of 1.18 Gpa and maximum strength of 1.27 Gpa as well as an obvious plastic strain of about 2.4% during compressive deformation.This light Al-based alloy with good GFA and mechanical properties is promising as a new high specific strength material with good deformability.

  18. Magnesioferrite synthesized from magnesian-magnetites

    Directory of Open Access Journals (Sweden)

    Marcelo Hidemassa Anami

    2014-02-01

    Full Text Available Magnesioferrite is an important mineral due to its use in different scientific fields and by the fact that the soil through the action of weathering, can be a source of nutrients essential for plant development by the fact that in the soil. Its use in pure form or associated with other minerals is only possible through the synthesis in laboratory conditions. This study aimed to synthesize magnesioferrite and hematite from magnesian-magnetite by a co-precipitation procedure. The methodology used is an adaptation of the method of synthesis of pure magnetite, partially replacing the soluble salts of iron with soluble magnesium salts in the proportion of 30.0 mol% of Fe for Mg. The characterization of the synthetic minerals used x-rays diffraction, total chemical analysis and mass specific magnetic susceptibility. The results showed that besides the magnesian-magnetite an unprecedented muskoxita was synthesized, which upon annealing was converted to magnesioferrite and hematite and in the proportion of 93.1% and 6.9% respectively. The isomorphous substitution of Fe for Mg enhanced the thermal stability of the ferrimagnetic mineral synthesized.

  19. Titanat aluminium synthesized in a solar furnace

    Energy Technology Data Exchange (ETDEWEB)

    Suleimanov, S.; Gulamova, D. [Uzbek Academy of Sciences, Tashkent (Uzbekistan). Materials Science Inst.; Boehmer, M.; Fend, T.; Rietbrock, P. [DLR, Koeln (Germany). MD-ET

    1997-12-31

    Solar furnace technology is an ecologically clean and economically attractive way, most suitable for research and development of new advanced materials. Such features of the solar furnace as sterile conditions of heating, high speed temperature delivering, materials processing in the whole range of the solar spectrum, quenching of the melt with rates of {proportional_to}10{sup 6} K/s, possibility of melting in the cold crucible etc. allow to synthesize complex oxide compositions, such as Al{sub 2}TiO{sub 5}. The study of Al{sub 2}TiO{sub 5} synthesized in the solar furnace has shown that the material is pure {beta}-Al{sub 2}TiO{sub 5} and possesses orthorhombic crystal structure. Microstructure of the material obtained from the melt has a prolonged prismatic shape. When the material is obtained by quenching the microstructure displays fine-grain structure with crystallites of 3-5 micron in size. Raman spectroscopy investigations have been performed on {beta}-Al{sub 2}TiO{sub 5} synthesized on the solar furnace. It has been observed a distinct band at 900 1/cm which is not presented in other six coordinated titanates. Most probably this band is connected with valent vibrations of the Al-O coupling in distorted octahedrons [AlO{sub 6}]. (orig.)

  20. Syntheses and studies of acetylenic polymers

    Energy Technology Data Exchange (ETDEWEB)

    Yiwei, Ding

    1994-03-03

    Based on new diiodo aryl compounds a series of novel soluble polymers, poly(2,5-dialkoxy-1,4-phenyleneethynylene)s (PPE polymers) were synthesized using palladium-catalysis. The molecular weights (MW) range from 8,000 to 40,000. Properties such as absorption, fluorescence, and conductivity were studied. A PPE polymer with butoxy side chain exhibits a weak electrical conductivity ({sigma} = 10{sup {minus}3} S/cm) after doping with AsF{sub 5}. Absorption spectra in THF solution at room temperature (RT) show a maximum at 440 nm. However, absorption spectra of PPE polymers in the film state at (RT) show a maximum at 480 nm. PPE polymer-based light emitting diode (LED) devices have been prepared; greenish light from these LED devices can be observed. Poly(ethynylene-p-arylene-ethynylene-silylene)s were synthesized through the same palladium-catalyzed polymerization; MWs are between 6,000 and 82,000. Absorption and fluorescence were studied. Some of these polymers exhibit thermotropic liquid crystalline properties. In addition, nonlinear optical properties were briefly examined. Poly(silylene-ethynylene) homopolymers as well as alternating copolymers were synthesized through a novel palladium-catalyzed polymerization; MWs range from 56 {times} 10{sup 3} to 5.3 {times} 10{sup 3}. Thermal stability of these was also investigated; char yields range from 56 to 83%. One of these polymers exhibits thermotropic liquid crystalline properties.

  1. Syntheses and studies of acetylenic polymers

    Energy Technology Data Exchange (ETDEWEB)

    Yiwei, Ding [Iowa State Univ., Ames, IA (United States)

    1994-03-03

    Based on new diiodo aryl compounds a series of novel soluble polymers, poly(2,5-dialkoxy-1,4-phenyleneethynylene)s (PPE polymers) were synthesized using palladium-catalysis. The molecular weights (MW) range from 8,000 to 40,000. Properties such as absorption, fluorescence, and conductivity were studied. A PPE polymer with butoxy side chain exhibits a weak electrical conductivity (σ = 10-3 S/cm) after doping with AsF5. Absorption spectra in THF solution at room temperature (RT) show a maximum at 440 nm. However, absorption spectra of PPE polymers in the film state at (RT) show a maximum at 480 nm. PPE polymer-based light emitting diode (LED) devices have been prepared; greenish light from these LED devices can be observed. Poly(ethynylene-p-arylene-ethynylene-silylene)s were synthesized through the same palladium-catalyzed polymerization; MWs are between 6,000 and 82,000. Absorption and fluorescence were studied. Some of these polymers exhibit thermotropic liquid crystalline properties. In addition, nonlinear optical properties were briefly examined. Poly(silylene-ethynylene) homopolymers as well as alternating copolymers were synthesized through a novel palladium-catalyzed polymerization; MWs range from 56 x 103 to 5.3 x 103. Thermal stability of these was also investigated; char yields range from 56 to 83%. One of these polymers exhibits thermotropic liquid crystalline properties.

  2. Method of synthesizing cubic system boron nitride

    Energy Technology Data Exchange (ETDEWEB)

    Yuzu, S.; Sumiya, H.; Degawa, J.

    1987-10-13

    A method is described for synthetically growing cubic system boron nitride crystals by using boron nitride sources, solvents for dissolving the boron nitride sources, and seed crystals under conditions of ultra-high pressure and high temperature for maintaining the cubic system boron nitride stable. The method comprises the following steps: preparing a synthesizing vessel having at least two chambers, arrayed in order in the synthesizing vessel so as to be heated according to a temperature gradient; placing the solvents having different eutectic temperatures in each chamber with respect to the boron nitride sources according to the temperature gradient; placing the boron nitride source in contact with a portion of each of the solvents heated at a relatively higher temperature and placing at least a seed crystal in a portion of each of the solvents heated at a relatively lower temperature; and growing at least one cubic system boron nitride crystal in each of the solvents in the chambers by heating the synthesizing vessel for establishing the temperature gradient while maintaining conditions of ultra-high pressure and high temperature.

  3. Correlation of Bulk Dielectric and Piezoelectric Properties to the Local Scale Phase Transformations, Domain Morphology, and Crystal Structure Modified

    Energy Technology Data Exchange (ETDEWEB)

    Priya, Shashank [Virginia Polytechnic Inst. and State Univ. (Virginia Tech), Blacksburg, VA (United States); Viehland, Dwight [Virginia Polytechnic Inst. and State Univ. (Virginia Tech), Blacksburg, VA (United States)

    2014-12-14

    Three year program entitled “Correlation of bulk dielectric and piezoelectric properties to the local scale phase transformations, domain morphology, and crystal structure in modified lead-free grain-textured ceramics and single crystals” was supported by the Department of Energy. This was a joint research program between D. Viehland and S. Priya at Virginia Tech. Single crystal and textured ceramics have been synthesized and characterized. Our goals have been (i) to conduct investigations of lead-free piezoelectric systems to establish the local structural and domain morphologies that result in enhanced properties, and (ii) to synthesize polycrystalline and grain oriented ceramics for understanding the role of composition, microstructure, and anisotropy

  4. Optical and structural characterization of nickel selenide nanoparticles synthesized by simple methods

    Science.gov (United States)

    Moloto, N.; Moloto, M. J.; Coville, N. J.; Sinha Ray, S.

    2009-07-01

    A series of nickel selenide (NiSe 2, NiSe and Ni 3Se 4) nanoparticles have been synthesized by three different methods, i.e. the single-source precursor (method 1), the thermolysis of trioctylphosphine selenide (TOPSe) and nickel chloride in hexadecylamine (method 2) as well as the reaction of nickel chloride and selenium using sodium borohydride as a reducing agent in methanol and in water (method 3). The optical properties of nickel selenide synthesized from all the methods showed good nanometric characteristics with an observed blue-shift in absorption band-edge from bulk nickel selenide. The structural characteristics varied with the methods employed, with method 1 producing 10 nm spherical NiSe 2 particles, method 2 star-shaped NiSe particles, while method 3 produced hexagonal NiSe nanoparticles in methanol and rod-shaped Ni 3Se 4 particles in water.

  5. Modified coprecipitation process of synthesizing Bi-system superconductor precursor powder and its stoichiometry

    Institute of Scientific and Technical Information of China (English)

    毛传斌; 杜泽华; 周廉

    1996-01-01

    A modified coprecipitation process is presented based on the stoichiometry study of oxalate coprecipitation process in water medium to synthesize Bi-Pb-Sr-Ca-Cu-O multi-component powder.Its characteristic is that the coprecipitation reaction takes place in a mixed solution medium composed of water and a kind of organic solvent (volume percentage >90%).Thus,it overcomes the serious shortcoming of inability to maintain stoichiometry in Bi-system superconductor powder synthesized by water-medium coprecipitation.The effects of pH value,oxalic acid concentration and aging time on stoichiometry maintenance in precipitate are systematically studied.Bulk material made from the powder prepared by the new modified coprecipitation also shows the success of the new process.

  6. Budker INP in ATLAS

    CERN Multimedia

    2001-01-01

    The Novosibirsk group has proposed a new design for the ATLAS liquid argon electromagnetic end-cap calorimeter with a constant thickness of absorber plates. This design has signifi- cant advantages compared to one in the Technical Proposal and it has been accepted by the ATLAS Collaboration. The Novosibirsk group is responsible for the fabrication of the precision aluminium structure for the e.m.end-cap calorimeter.

  7. Bulk magnetic properties of CdFe2O4 in nano-regime

    Indian Academy of Sciences (India)

    Rucha Desai; R V Mehta; R V Upadhyay; Amita Gupta; A Praneet; K V Rao

    2007-06-01

    Cadmium ferrite particles have been synthesized using co-precipitation technique followed by a low temperature (600°C) annealing in a time scale much shorter than reported in literature. Incorporation of sodium chloride during annealing helps to form a single phase spinel structure with a final particle size of around 50 nm. Even at such a short length scale we observe the overall magnetic properties to be similar to those of the bulk. The observed magnetic properties can be explained on the basis of an anti-ferromagnetic core with a shell containing ‘ferromagnetic-like’, but canted spin structure.

  8. Facile synthesis of tin phosphite nanosheets via exfoliated bulk crystals: Electronic structure and piezoelectric property.

    Science.gov (United States)

    Song, Jun-Ling; Zhang, Xi-Rui; Lu, Rui-Feng

    2016-08-01

    Tin phosphite nanosheets were synthesized by a facile exfoliation method. SnHPO3 nanosheets with a thickness of ∼2.6nm readily form a stable colloidal suspension in ethanol using ultrasonic method. Structures and optical properties of the obtained nanosheets were investigated. The prepared SnHPO3 nanosheets exhibit an obvious blue-shift in UV absorbance compared with bulk SnHPO3 crystal materials. Moreover, the piezoelectric coefficients of SnHPO3 monolayer were calculated based on density functional theory, which are larger than that of h-BN monolayer, indicating this material could be a good candidate for designing electro-optical nano-devices.

  9. Study of the Photoconductivity of Zinc Oxide Nanoparticles Synthesized by a Sol-Gel Method

    Science.gov (United States)

    Pandey, Nitin; Srivastava, Rajneesh Kumar

    2015-01-01

    ZnO nanoparticles (NPs) were synthesized by use of a sol-gel method at different temperatures, and characterized by x-ray diffraction (XRD), scanning electron microscopy (SEM), and UV-visible absorption spectroscopy. XRD analysis showed crystallite size was of the order of few tens of nanometers and the NPs had a wurtzite structure. SEM micrographs showed the NPs were pseudo-spherical in shape. UV-visible absorption study revealed a blue shift of the absorption edge compared with that of bulk ZnO. With increasing temperature of synthesis, the absorption edge was red-shifted. The photoconductivity, in air, of all the samples was studied. Variation of the dark current with applied voltage was linear for NPs synthesized at low temperatures and became super-linear for NPs synthesized at high temperatures. The dark current decreased with increasing temperature of synthesis. Photosensitivity was maximum for NPs synthesized at 600°C. Anomalous behavior, a decrease in photocurrent even during steady illumination, was observed for all the samples.

  10. Materials for Bulk Acoustic Resonators and Filters

    Science.gov (United States)

    Loebl, Hans-Peter

    2003-03-01

    Highly selective solidly mounted bulk acoustic wave (BAW) band pass filters are suited for mobile and wireless systems in the GHz frequency range between 0.8 and 10 GHz. Electro-acoustic thin film BAW resonators are the building blocks these BAW filters. Piezoelectric materials used in these resonators include mainly AlN or ZnO which can be deposited by dedicated thin film sputter deposition techniques. Using these piezo-electric materials and using suited materials for the acoustic Bragg reflector, BAW resonators with high quality factors can be fabricated. The achievable filter bandwidth is approximately 4Alternatively, also ferroelectric thin films might be used to achieve higher coupling coefficient and thus filter bandwidth. BAW resonators and filters have been designed and fabricated on 6" Silicon and glass wafers. Results are presented for resonators and filters operating between 1.95 and 8 GHz. The talk will give an overview of the material aspects which are important for BAW devices. It will be shown that modeling of the resonator and filter response using 1D electro-acoustic simulation (1,2) which includes losses is essential to extract acoustic and electrical material parameters. (1) Solidly Mounted Bulk Acoustic Wave Filters for the Ghz Frequency Range, H.P. Loebl, C. Metzmacher , D.N.Peligrad , R. Mauczok , M. Klee , W. Brand , R.F. Milsom , P.Lok , F.van Straten , A. Tuinhout , J.W.Lobeek, IEEE 2002 Ultrasonics Symposium Munich, October 2002. (2) Combined Acoustic-Electromagnetic Simulation Of Thin-Film Bulk Acoustic Wave Filters, R.F. Milsom, H-P. Löbl, D.N. Peligrad, J-W. Lobeek, A. Tuinhout, R. H. ten Dolle IEEE 2002 Ultrasonics Symposium Munich, October 2002.

  11. Volmer–Weber InAs quantum dot formation on InP (113)B substrates under the surfactant effect of Sb

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Yu, E-mail: yu.zhao@insa-rennes.fr; Bertru, Nicolas; Folliot, Hervé; Rohel, Tony [Université Européenne de Bretagne, INSA, FOTON, UMR-CNRS 6082, 20 Avenue des Buttes de Coësmes, F-35708 Rennes Cedex 7 (France); Mauger, Samuel J. C.; Koenraad, Paul M. [COBRA Inter-University Research Institute, Eindhoven University of Technology, P.O. Box 513, NL-5600MB Eindhoven (Netherlands)

    2014-07-21

    We report on Sb surfactant growth of InAs nanostructures on GaAs{sub 0.51}Sb{sub 0.49} layers deposited on InP (001) and on (113)B oriented substrates. On the (001) orientation, the presence of Sb significantly favors the two-dimensional growth regime. Even after the deposition of 5 mono-layers of InAs, the epitaxial film remains flat and InAs/GaAs{sub 0.51}Sb{sub 0.49} type-II quantum wells are achieved. On (113)B substrates, same growth runs resulted in formation of high density InAs islands. Microscopic studies show that wetting layer is missing on (113)B substrates, and thus, a Volmer-Weber growth mode is concluded. These different behaviors are attributed to the surface energy changes induced by Sb atoms on surface.

  12. Epitaxial growth of quantum dots on InP for device applications operating at the 1.55 μm wavelength range

    DEFF Research Database (Denmark)

    Semenova, Elizaveta; Kulkova, Irina; Kadkhodazadeh, Shima

    2014-01-01

    The development of epitaxial technology for the fabrication of quantum dot (QD) gain material operating in the 1.55 μm wavelength range is a key requirement for the evolvement of telecommunication. High performance QD material demonstrated on GaAs only covers the wavelength region 1-1.35 μm...... lithography. Due to the lower lattice mismatch of InAs/InP compared to InAs/GaAs, InP based QDs have a larger diameter and are shallower compared to GaAs based dots. This shape causes low carrier localization and small energy level separation which leads to a high threshold current, high temperature...... with the possibility to approach an ideal QD shape....

  13. Particle-based Full-band Approach for Fast Simulation of Charge Transport in Si, GaAs, and InP

    Directory of Open Access Journals (Sweden)

    Marco Saraniti

    2002-01-01

    Full Text Available We discuss the application of the fullband cellular automaton (CA method for the simulation of charge transport in several semiconductors. Basing the selection of the state after scattering on simple look-up tables, the approach is physically equivalent to the full band Monte Carlo (MC approach but is much faster. Furthermore, the structure of the pre-tabulated transition probabilities naturally allows for an extension of the model to fully anisotropic scattering without additional computational burden. Simulation results of transport of electrons and holes in several materials are discussed, with particular emphasis on the transient response of photo-generated carriers in InP and GaAs. Finally, a discussion on parallel algorithms is presented, for the implementation of the code on workstation clusters.

  14. Nanoelectronic devices--resonant tunnelling diodes grown on InP substrates by molecular beam epitaxy with peak to valley current ratio of 17 at room temperature

    Institute of Scientific and Technical Information of China (English)

    Zhang Yang; Zeng Yi-Ping; Ma Long; Wang Bao-Qiang; Zhu Zhan-Ping; Wang Liang-Chen; Yang Fu-Hua

    2006-01-01

    This paper reports that InAs/In0.53Ga0.47As/AlAs resonant tunnelling diodes have been grown on InP substrates by molecular beam epitaxy. Peak to valley current ratio of these devices is 17 at 300K. A peak current density of 3kA/cm2 has been obtained for diodes with AlAs barriers of ten monolayers, and an In0.53Ga0.47As well of eight monolayers with four monolayers of InAs insert layer. The effects of growth interruption for smoothing potential barrier interfaces have been investigated by high resolution transmission electron microscope.

  15. High quality-factor Si/SiO(2)-InP hybrid micropillar cavities with submicrometer diameter for 1.55-μm telecommunication band.

    Science.gov (United States)

    Song, Hai-Zhi; Takemoto, Kazuya; Miyazawa, Toshiyuki; Takatsu, Motomu; Iwamoto, Satoshi; Ekawa, Mitsuru; Yamamoto, Tsuyoshi; Arakawa, Yasuhiko

    2015-06-15

    We theoretically demonstrate high quality(Q)-factor micropillar cavities at 1.55-μm wavelength based on Si/SiO(2)-InP hybrid structure. An adiabatic design in distributed Bragg reflectors (DBRs) improves Q-factor for upto 3 orders of magnitude, while reducing the diameter to sub-micrometer. A moderate Q-factor of ~3000 and a Purcell factor of ~200 are realized by only 2 taper segments and fewer conventional DBR pairs, enabling single photon generation at GHz rate. As the taper segment number is increased, Q-factor can be boosted to ~10(5)-10(6), enabling coherent exchange between the emitter and the optical mode at 1.55 μm, which is applicable in quantum information networks.

  16. Photovoltaic conversion of visible spectrum by GaP capped InP quantum dots grown on Si (100) by metalorganic chemical vapor deposition

    Science.gov (United States)

    Halder, Nripendra N.; Biswas, Pranab; Banerji, P.; Kundu, Souvik; Nagabhushan, B.; Sarkar, Krishnendu; Chowdhury, Sisir; Chaudhuri, Arunava

    2015-01-01

    Growth of GaP capped strained InP quantum dots was carried out by metal organic chemical vapor deposition technique on Si (100) substrates to explore an alternative material system for photovoltaic conversion. Studies on reflectance spectroscopy show higher absorption of visible photons compared to scattering. Smooth and defect free interface provides low dark current with high rectification ratio. A solar cell made of five periods of quantum dots is found to provide a conversion efficiency of 4.18% with an open circuit voltage and short circuit current density of 0.52 V and 13.64 mA/cm2, respectively, under AM 1.5 solar radiation.

  17. Multi-wafer growth of GaInAs photodetectors on 4" InP by MOCVD for SWIR imaging applications

    Science.gov (United States)

    Furlong, Mark J.; Mattingley, Mark; Lim, Sung Wook; Geen, Matthew; Jones, Wynne

    2014-06-01

    Photodiodes based on the GaInAs/InP material system responding in the 1.3-1.7 μm wavelength range are of interest in a wide range of applications, from optical power and channel monitors in telecommunication systems through to advanced night vision imaging using large format focal plane type detectors for defense and security applications. Here we report on our results of GaInAs PIN photo detector structures grown on 2", 3" and 4" InP substrates by low pressure Metalorganic Chemical Vapor Deposition (MOCVD) in both standard and new larger volume format reactor configurations. High quality, lattice matched InP/GaInAs epitaxial layers were grown and we demonstrate that when moving to larger platen configurations, high degree of thickness uniformity (improved performance.

  18. Characterization of the InN conversion layer in InP surface by ammonia gas: Nuclear reaction analysis, X-ray diffraction and Raman scattering studies

    Energy Technology Data Exchange (ETDEWEB)

    Mizuki, Y. [College of Engineering and Research Center of Ion Beam Technology, Hosei University, Koganei, Tokyo 184-8584 (Japan); Onoue, A. [College of Engineering and Research Center of Ion Beam Technology, Hosei University, Koganei, Tokyo 184-8584 (Japan); Kuriyama, K. [College of Engineering and Research Center of Ion Beam Technology, Hosei University, Koganei, Tokyo 184-8584 (Japan)]. E-mail: kuri@ionbeam.hosei.ac.jp; Hasegawa, M. [National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568 (Japan); Sakamoto, I. [National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568 (Japan)

    2006-08-15

    The surface layer of InP(1 0 0) wafer is converted into {alpha}-InN phase (wurtzite) by annealing it at around 510 {sup o}C for 5 h under NH{sub 3} gas flow. X-ray diffraction analysis shows that the conversion layer is a (1 1 -2 0) oriented InN. This result is also supported by E{sub 1}(TO) and A{sub 1}(LO) phonon modes observed by a Raman scattering method, originated from the (1 1 -2 0) face of {alpha}-InN. The converted layer evaluated by nuclear reaction analysis using a {sup 14}N(d, p){sup 15}N reaction includes a N concentration of {approx}6 x 10{sup 22} cm{sup -3}.

  19. Hubble Parameter in Bulk Viscous Cosmology

    CERN Document Server

    Tawfik, A; Wahba, M

    2009-01-01

    We discuss influences of bulk viscosity on the Early Universe, which is modeled by Friedmann-Robertson-Walker metric and Einstein field equations. We assume that the matter filling the isotropic and homogeneous background is relativistic viscous characterized by ultra-relativistic equations of state deduced from recent lattice QCD simulations. We obtain a set of complicated differential equations, for which we suggest approximate solutions for Hubble parameter $H$. We find that finite viscosity in Eckart and Israel-Stewart fluids would significantly modify our picture about the Early Universe.

  20. Fabrication of Porous Bulk Metallic Glass

    Institute of Scientific and Technical Information of China (English)

    Keqiang QIU; Yinglei REN

    2005-01-01

    An open-cell porous bulk metallic glass (BMG)with a diameter of at least 6 mm was fabricated by using an U-turn quartz tube and infiltration casting aroundsoluble NaCl placeholders. The pore formation and glassy structure were examined by optical microscopy (OM), scanning electron microscopy (SEM) and X-ray diffraction (XRD). The results show that the pores or cells are connected to each other and the specimenis composed of a mostly glassy phase.This paper provides a suitable method for fabrication of porous BMG and BMG with larger size in diameter.