WorldWideScience

Sample records for buffered metal substrates

  1. Buffer layers on metal alloy substrates for superconducting tapes

    Energy Technology Data Exchange (ETDEWEB)

    Jia, Quanxi; Foltyn, Stephen R.; Arendt, Paul N.; Groves, James R.

    2004-10-05

    An article including a substrate, at least one intermediate layer upon the surface of the substrate, a layer of an oriented cubic oxide material having a rock-salt-like structure upon the at least one intermediate layer, and a layer of a SrRuO.sub.3 buffer material upon the oriented cubic oxide material layer is provided together with additional layers such as a HTS top-layer of YBCO directly upon the layer of a SrRuO.sub.3 buffer material layer. With a HTS top-layer of YBCO upon at least one layer of the SrRuO.sub.3 buffer material in such an article, J.sub.c 's of up to 1.3.times.10.sup.6 A/cm.sup.2 have been demonstrated with projected I.sub.c 's of over 200 Amperes across a sample 1 cm wide.

  2. Buffer layers on metal alloy substrates for superconducting tapes

    Energy Technology Data Exchange (ETDEWEB)

    Jia, Quanxi; Foltyn, Stephen R.; Arendt, Paul N.; Groves, James R.

    2004-06-29

    An article including a substrate, a layer of an inert oxide material upon the surface of the substrate, a layer of an amorphous oxide or oxynitride material upon the inert oxide material layer, a layer of an oriented cubic oxide material having a rock-salt-like structure upon the amorphous oxide material layer, and a layer of a SrRuO.sub.3 buffer material upon the oriented cubic oxide material layer is provided together with additional layers such as a HTS top-layer of YBCO directly upon the layer of a SrRuO.sub.3 buffer material layer. With a HTS top-layer of YBCO upon at least one layer of the SrRuO.sub.3 buffer material in such an article, J.sub.c 's of up to 1.3.times.10.sup.6 A/cm.sup.2 have been demonstrated with projected IC's of over 200 Amperes across a sample 1 cm wide.

  3. ZnO buffer layer for metal films on silicon substrates

    Science.gov (United States)

    Ihlefeld, Jon

    2014-09-16

    Dramatic improvements in metallization integrity and electroceramic thin film performance can be achieved by the use of the ZnO buffer layer to minimize interfacial energy between metallization and adhesion layers. In particular, the invention provides a substrate metallization method utilizing a ZnO adhesion layer that has a high work of adhesion, which in turn enables processing under thermal budgets typically reserved for more exotic ceramic, single-crystal, or metal foil substrates. Embodiments of the present invention can be used in a broad range of applications beyond ferroelectric capacitors, including microelectromechanical systems, micro-printed heaters and sensors, and electrochemical energy storage, where integrity of metallized silicon to high temperatures is necessary.

  4. Growth and Characterization of Doped CeO2 Buffers on Ni-W Substrates for Coated Conductors Using Metal Organic Deposition Method

    Institute of Scientific and Technical Information of China (English)

    WANG Yao; ZHOU Lian; YU Zeming; LI Chengshan; LI Jinshan; JIN Lihu; LU Yafen

    2012-01-01

    CeO2 and Ce0 8Mo2O2-d films (M =Mn,Y,Gd,Sin,Nd and La) with (001) preferred orientation have been prepared on biaxially textured Ni-W substrates by metal organic decomposition (MOD) method.The factors influencing the formation of cracks on the surface of these CeO2 and doped CeO2 films on Ni-W substrates were explored by X-ray diffraction (XRD),scanning electron microscopy (SEM) analysis,atomic force microscopy (AFM) and differential scanning calorimetry (DSC).The results indicate that many factors,such as the change of the ionic radii of doping cations,the transformation of crystal structure and the formation of oxygen vacancies in lattices at high annealing temperature,may be related to the formation of cracks on the surface of these films.However,the crack formation shows no dependence on the crystal lattice mismatch degree of the films with Ni-W substrates.Moreover,the suppression of surface cracks is related to the change of intrinsic elasticity of CeO2 film with doping of cations with a larger radius.SEM and AFM investigations of Ce08Mo2O2-d(M =Y,Gd,Sm,Nd and La) films reveal the dense,smooth and crack-free microstructure,and their lattice parameters match well with that of YBCO,illuminating that they are potentially suitable to be as buffer layer,especially as cap layer in multi-layer architecture of buffer layer for coated conductors.

  5. Conductive and robust nitride buffer layers on biaxially textured substrates

    Science.gov (United States)

    Sankar, Sambasivan [Chicago, IL; Goyal, Amit [Knoxville, TN; Barnett, Scott A [Evanston, IL; Kim, Ilwon [Skokie, IL; Kroeger, Donald M [Knoxville, TN

    2009-03-31

    The present invention relates to epitaxial, electrically conducting and mechanically robust, cubic nitride buffer layers deposited epitaxially on biaxially textured substrates such as metals and alloys. The invention comprises of a biaxially textured substrate with epitaxial layers of nitrides. The invention also discloses a method to form such epitaxial layers using a high rate deposition method as well as without the use of forming gases. The invention further comprises epitaxial layers of oxides on the biaxially textured nitride layer. In some embodiments the article further comprises electromagnetic devices which may have superconducting properties.

  6. Effect of maleic anhydride-aniline derivative buffer layer on the properties of flexible substrate heterostructures: Indium tin oxide/nucleic acid base/metal

    Energy Technology Data Exchange (ETDEWEB)

    Stanculescu, A., E-mail: sanca@infim.ro [National Institute of Materials Physics, 105 bis Atomistilor Street, P.O. Box MG-7, 077125, Bucharest-Magurele (Romania); Socol, M. [National Institute of Materials Physics, 105 bis Atomistilor Street, P.O. Box MG-7, 077125, Bucharest-Magurele (Romania); Socol, G.; Mihailescu, I.N. [National Institute for Laser, Plasma and Radiation Physics, P.O. Box MG-36, 077125, Bucharest-Magurele (Romania); Girtan, M. [Laboratoire de Photonique d' Angers, Universite d' Angers, 2, Bd. Lavoisier, 49045, Angers (France); Preda, N. [National Institute of Materials Physics, 105 bis Atomistilor Street, P.O. Box MG-7, 077125, Bucharest-Magurele (Romania); Albu, A.-M. [Department of Polymer Science, University ' Politehnica' of Bucharest, Bucharest (Romania); Stanculescu, F. [University of Bucharest, Faculty of Physics, Str. Atomistilor nr.405, P.O. Box MG-11, Bucharest-Magurele, 077125 (Romania)

    2011-12-01

    This paper presents some investigations on the properties of guanine (G) and cytosine (C) based heterostructures deposited on flexible substrates. The effects of two types of maleic anhydride-aniline derivatives (maleic anhydride-cyano aniline or maleic anhydride-2,4 dinitroaniline) buffer layer, deposited between indium tin oxide and (G) or (C) layer, on the optical and electrical properties of the heterostructures have been identified. The heterostructures containing a film of maleic anhydride-2,4 dinitroaniline have shown a good transparency and low photoluminescence in visible range. This buffer layer has determined an increase in the conductance only in the heterostructures based on (G) and (C) deposited on biaxially-oriented polyethylene terephthalate substrate.

  7. Fabrication and properties of epitaxial buffer layers on nonmagnetic textured Ni based alloy substrates

    International Nuclear Information System (INIS)

    Biaxially aligned YBCO thick films on oxide buffered metallic substrates is a promising route toward the fabrication of superconducting tapes operating at liquid nitrogen temperature. The role of buffer layer is to reduce the lattice mismatch between the substrate and the YBCO film, to adapt the thermal expansion coefficient, to hamper the diffusion of Ni in YBCO film and to prevent the oxidation of the metallic substrate surface. This paper presents a study regarding CeO2 buffer layer deposition on a new nonmagnetic (001)[100] textured Ni-V alloy substrates. The deposition of CeO2 was performed by both pulsed laser ablation and e-beam evaporation techniques. The θ-2θ X-ray diffraction pattern mainly exhibits the (00 ell) peaks of CeO2, indicating that the films are epitaxially grown with the c axis perpendicular to the substrate. Rocking curves through the CeO2 (002) peak have a FWHM of about 6 degree. The SEM studies have shown that the surface is smooth, continuous and free of cracks. Texture analysis reveals a good in-plane orientation for the ablated CeO2 film, whereas the electron beam evaporated CeO2 shows two textures in the growth plane. Further efforts are focused on the deposition of YBCO thick film on the as buffered nonmagnetic metallic substrate

  8. Strontium Titanate Buffer Layers on Cu/33%Ni Substrates using a Novel Solution Chemistry

    DEFF Research Database (Denmark)

    Pallewatta, Pallewatta G A P; Yue, Zhao; Hui, Tian;

    2013-01-01

    SrTiO3 is a widely studied perovskite material due to its advantages as a buffer template which can be simply applied between a metal substrate tape and a superconducting layer in 2G high temperature superconducting (HTS) tapes. In this study, heteroepitaxial SrTiO3 thin films were deposited...

  9. Substrate-induced magnetism in epitaxial graphene buffer layers.

    Science.gov (United States)

    Ramasubramaniam, A; Medhekar, N V; Shenoy, V B

    2009-07-01

    Magnetism in graphene is of fundamental as well as technological interest, with potential applications in molecular magnets and spintronic devices. While defects and/or adsorbates in freestanding graphene nanoribbons and graphene sheets have been shown to cause itinerant magnetism, controlling the density and distribution of defects and adsorbates is in general difficult. We show from first principles calculations that graphene buffer layers on SiC(0001) can also show intrinsic magnetism. The formation of graphene-substrate chemical bonds disrupts the graphene pi-bonds and causes localization of graphene states near the Fermi level. Exchange interactions between these states lead to itinerant magnetism in the graphene buffer layer. We demonstrate the occurrence of magnetism in graphene buffer layers on both bulk-terminated as well as more realistic adatom-terminated SiC(0001) surfaces. Our calculations show that adatom density has a profound effect on the spin distribution in the graphene buffer layer, thereby providing a means of engineering magnetism in epitaxial graphene.

  10. Fabrication of STO buffer films on MgO substrates by the MOD method

    International Nuclear Information System (INIS)

    We fabricated SrTiO3 (STO) thin films, which are expected to be used as buffer layers on MgO substrates, by the metal-organic decomposition (MOD) method, and evaluated the properties of the films. By introducing a 2-step heat treatment and optimizing the precursor temperature, we could improve the full width at half maximum (FWHM) values of the rocking curves up to 1.81 deg in the X-ray diffraction (XRD) measurements of the STO films on MgO substrates. The minimum FWMH value of the in-plane rocking curves of the films was 2.60 deg and the films had a cube-on-cube structure on the MgO substrates. Furthermore, the root mean square (rms) roughness values of the surfaces of the STO thin films derived from atomic force microscopy (AFM) were 2.11-5.37 nm

  11. Growth of b-axis oriented VO2 thin films on glass substrates using ZnO buffer layer

    International Nuclear Information System (INIS)

    VO2 thin films are grown on glass substrates by pulsed laser deposition using vanadium metal as a target. In this study, a ZnO thin film was used as a buffer layer for the growth of VO2 thin films on glass substrates. X-ray diffraction studies showed that the VO2 thin film had b-axis preferential orientation on a c-axis oriented ZnO buffer layer. The thickness of the ZnO buffer layer and the oxygen pressure during VO2 deposition were optimized to grow highly b-axis oriented VO2 thin films. The metal-insulator transition properties of the VO2 film samples were investigated in terms of infrared reflectance and electrical resistance with varying temperatures.

  12. Lattice matched semiconductor growth on crystalline metallic substrates

    Science.gov (United States)

    Norman, Andrew G; Ptak, Aaron J; McMahon, William E

    2013-11-05

    Methods of fabricating a semiconductor layer or device and said devices are disclosed. The methods include but are not limited to providing a metal or metal alloy substrate having a crystalline surface with a known lattice parameter (a). The methods further include growing a crystalline semiconductor alloy layer on the crystalline substrate surface by coincident site lattice matched epitaxy. The semiconductor layer may be grown without any buffer layer between the alloy and the crystalline surface of the substrate. The semiconductor alloy may be prepared to have a lattice parameter (a') that is related to the lattice parameter (a). The semiconductor alloy may further be prepared to have a selected band gap.

  13. Influence of AlGaN Buffer Growth Temperature on GaN Epilayer based on Si(lll) Substrate

    International Nuclear Information System (INIS)

    This paper investigated the influence of AlGaN buffer growth temperature on strain status and crystal quality of the GaN film on Si(111) sbustrates by metal organic chemical vapor deposition. It was demonstrated by the optical microscopy that AlGaN buffer gorwth temperature had a remarkable effect on compensating tensil stress in top GaN layer and preventing the formation of cracks. X-ray diffraction and atomic force microscopy analysis showed crystal quality and surface morphology of the GaN epilayer could be improved through increasing AlGaN buffer growth temperature. 1μm crack-free GaN epilayer on Si (111) substrates was obtained with graded AlGaN buffer layer at optimized temperature of 1050 deg. C. Transmission electron microscopy analysis revealed that a significant reduction in threading dislocations was achieved in GaN epilayer.

  14. Influence of AlGaN Buffer Growth Temperature on GaN Epilayer based on Si(lll) Substrate

    Energy Technology Data Exchange (ETDEWEB)

    Wei Meng; Wang Xiaoliang; Pan Xu; Xiao Hongling; Wang Cuimei; Zhang Minglan [Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083 (China); Wang Zhanguo, E-mail: mengw@semi.ac.cn [Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083 (China)

    2011-02-01

    This paper investigated the influence of AlGaN buffer growth temperature on strain status and crystal quality of the GaN film on Si(111) sbustrates by metal organic chemical vapor deposition. It was demonstrated by the optical microscopy that AlGaN buffer gorwth temperature had a remarkable effect on compensating tensil stress in top GaN layer and preventing the formation of cracks. X-ray diffraction and atomic force microscopy analysis showed crystal quality and surface morphology of the GaN epilayer could be improved through increasing AlGaN buffer growth temperature. 1{mu}m crack-free GaN epilayer on Si (111) substrates was obtained with graded AlGaN buffer layer at optimized temperature of 1050 deg. C. Transmission electron microscopy analysis revealed that a significant reduction in threading dislocations was achieved in GaN epilayer.

  15. Carbon Nanotube Patterning on a Metal Substrate

    Science.gov (United States)

    Nguyen, Cattien V. (Inventor)

    2016-01-01

    A CNT electron source, a method of manufacturing a CNT electron source, and a solar cell utilizing a CNT patterned sculptured substrate are disclosed. Embodiments utilize a metal substrate which enables CNTs to be grown directly from the substrate. An inhibitor may be applied to the metal substrate to inhibit growth of CNTs from the metal substrate. The inhibitor may be precisely applied to the metal substrate in any pattern, thereby enabling the positioning of the CNT groupings to be more precisely controlled. The surface roughness of the metal substrate may be varied to control the density of the CNTs within each CNT grouping. Further, an absorber layer and an acceptor layer may be applied to the CNT electron source to form a solar cell, where a voltage potential may be generated between the acceptor layer and the metal substrate in response to sunlight exposure.

  16. Protecting the properties of monolayer MoS2 on silicon based substrates with an atomically thin buffer

    Science.gov (United States)

    Man, Michael K. L.; Deckoff-Jones, Skylar; Winchester, Andrew; Shi, Guangsha; Gupta, Gautam; Mohite, Aditya D.; Kar, Swastik; Kioupakis, Emmanouil; Talapatra, Saikat; Dani, Keshav M.

    2016-02-01

    Semiconducting 2D materials, like transition metal dichalcogenides (TMDs), have gained much attention for their potential in opto-electronic devices, valleytronic schemes, and semi-conducting to metallic phase engineering. However, like graphene and other atomically thin materials, they lose key properties when placed on a substrate like silicon, including quenching of photoluminescence, distorted crystalline structure, and rough surface morphology. The ability to protect these properties of monolayer TMDs, such as molybdenum disulfide (MoS2), on standard Si-based substrates, will enable their use in opto-electronic devices and scientific investigations. Here we show that an atomically thin buffer layer of hexagonal-boron nitride (hBN) protects the range of key opto-electronic, structural, and morphological properties of monolayer MoS2 on Si-based substrates. The hBN buffer restores sharp diffraction patterns, improves monolayer flatness by nearly two-orders of magnitude, and causes over an order of magnitude enhancement in photoluminescence, compared to bare Si and SiO2 substrates. Our demonstration provides a way of integrating MoS2 and other 2D monolayers onto standard Si-substrates, thus furthering their technological applications and scientific investigations.

  17. Pulsed laser deposition of YBCO films on ISD MgO buffered metal tapes

    CERN Document Server

    Ma, B; Koritala, R E; Fisher, B L; Markowitz, A R; Erck, R A; Baurceanu, R; Dorris, S E; Miller, D J; Balachandran, U

    2003-01-01

    Biaxially textured magnesium oxide (MgO) films deposited by inclined-substrate deposition (ISD) are desirable for rapid production of high-quality template layers for YBCO-coated conductors. High-quality YBCO films were grown on ISD MgO buffered metallic substrates by pulsed laser deposition (PLD). Columnar grains with a roof-tile surface structure were observed in the ISD MgO films. X-ray pole figure analysis revealed that the (002) planes of the ISD MgO films are tilted at an angle from the substrate normal. A small full-width at half maximum (FWHM) of approx 9deg was observed in the phi-scan for ISD MgO films deposited at an inclination angle of 55deg . In-plane texture in the ISD MgO films developed in the first approx 0.5 mu m from the substrate surface, and then stabilized with further increases in film thickness. Yttria-stabilized zirconia and ceria buffer layers were deposited on the ISD MgO grown on metallic substrates prior to the deposition of YBCO by PLD. YBCO films with the c-axis parallel to the...

  18. GaN Epitaxial Layer Grown with Conductive Al(x)Ga(1-x)N Buffer Layer on SiC Substrate Using Metal Organic Chemical Vapor Deposition.

    Science.gov (United States)

    So, Byeongchan; Lee, Kyungbae; Lee, Kyungjae; Heo, Cheon; Pyeon, Jaedo; Ko, Kwangse; Jang, Jongjin; Nam, Okhyun

    2016-05-01

    This study investigated GaN epitaxial layer growth with a conductive Al(x)Ga(1-x)N buffer layer on n-type 4H-SiC by high-temperature metalorganic chemical vapor deposition (HT-MOCVD). The Al composition of the Al(x)Ga(1-x)N buffer was varied from 0% to 100%. In terms of the crystal quality of the GaN layer, 79% Al was the optimal composition of the Al(x)Ga(1-x)N buffer layer in our experiment. A vertical conductive structure was fabricated to measure the current voltage (I-V) characteristics as a function of Al composition, and the I-V curves showed that the resistance increased with increasing Al concentration of the Al(x)Ga(1-x)N buffer layer. PMID:27483845

  19. Metallic coatings on silicon substrates, and methods of forming metallic coatings on silicon substrates

    Science.gov (United States)

    Branagan, Daniel J.; Hyde, Timothy A.; Fincke, James R.

    2008-03-11

    The invention includes methods of forming a metallic coating on a substrate which contains silicon. A metallic glass layer is formed over a silicon surface of the substrate. The invention includes methods of protecting a silicon substrate. The substrate is provided within a deposition chamber along with a deposition target. Material from the deposition target is deposited over at least a portion of the silicon substrate to form a protective layer or structure which contains metallic glass. The metallic glass comprises iron and one or more of B, Si, P and C. The invention includes structures which have a substrate containing silicon and a metallic layer over the substrate. The metallic layer contains less than or equal to about 2 weight % carbon and has a hardness of at least 9.2 GPa. The metallic layer can have an amorphous microstructure or can be devitrified to have a nanocrystalline microstructure.

  20. Methods of selectively incorporating metals onto substrates

    Energy Technology Data Exchange (ETDEWEB)

    Ernst; Richard D. (Salt Lake City, UT), Eyring; Edward M. (Salt Lake City, UT), Turpin; Gregory C. (Salt Lake City, UT), Dunn; Brian C. (Salt Lake City, UT)

    2008-09-30

    A method for forming multi-metallic sites on a substrate is disclosed and described. A substrate including active groups such as hydroxyl can be reacted with a pretarget metal complex. The target metal attached to the active group can then be reacted with a secondary metal complex such that an oxidation-reduction (redox) reaction occurs to form a multi-metallic species. The substrate can be a highly porous material such as aerogels, xerogels, zeolites, and similar materials. Additional metal complexes can be reacted to increase catalyst loading or control co-catalyst content. The resulting compounds can be oxidized to form oxides or reduced to form metals in the ground state which are suitable for practical use.

  1. Coincident site lattice-matched growth of semiconductors on substrates using compliant buffer layers

    Energy Technology Data Exchange (ETDEWEB)

    Norman, Andrew

    2016-08-23

    A method of producing semiconductor materials and devices that incorporate the semiconductor materials are provided. In particular, a method is provided of producing a semiconductor material, such as a III-V semiconductor, on a silicon substrate using a compliant buffer layer, and devices such as photovoltaic cells that incorporate the semiconductor materials. The compliant buffer material and semiconductor materials may be deposited using coincident site lattice-matching epitaxy, resulting in a close degree of lattice matching between the substrate material and deposited material for a wide variety of material compositions. The coincident site lattice matching epitaxial process, as well as the use of a ductile buffer material, reduce the internal stresses and associated crystal defects within the deposited semiconductor materials fabricated using the disclosed method. As a result, the semiconductor devices provided herein possess enhanced performance characteristics due to a relatively low density of crystal defects.

  2. Adhesion of rhodium films on metallic substrates

    Energy Technology Data Exchange (ETDEWEB)

    Marot, L. [Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel (Switzerland)], E-mail: laurent.marot@unibas.ch; Covarel, G.; Tuilier, M.-H. [Laboratoire Mecanique, Materiaux et Procedes de Fabrication, Pole STIC-SPI-Math 61 rue Albert Camus, Universite de Haute-Alsace, F-68093 - Mulhouse Cedex (France); Steiner, R.; Oelhafen, P. [Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel (Switzerland)

    2008-09-01

    Rhodium coated metallic films were prepared by magnetron sputtering on metallic substrates. All films were elaborated in same conditions on copper, molybdenum and stainless steel. Adhesion strength tests were carried out by scratch test. The results reveal that the adhesion strength between the film and the substrate is influenced by the hardness of the substrate. Increase of deposition temperature improves the adhesion of the coating. In addition, pre-treatment of substrates by a filtered cathodic vacuum arc and the layer thickness have has some effects on the final adhesion strength.

  3. Doped LZO buffer layers for laminated conductors

    Science.gov (United States)

    Paranthaman, Mariappan Parans [Knoxville, TN; Schoop, Urs [Westborough, MA; Goyal, Amit [Knoxville, TN; Thieme, Cornelis Leo Hans [Westborough, MA; Verebelyi, Darren T [Oxford, MA; Rupich, Martin W [Framingham, MA

    2010-03-23

    A laminated conductor includes a metallic substrate having a surface, a biaxially textured buffer layer supported by the surface of the substrate, the biaxially textured buffer layer comprising LZO and a dopant for mitigating metal diffusion through the LZO, and a biaxially textured conductor layer supported by the biaxially textured buffer layer.

  4. Pulsed laser deposition of YBCO films on ISD MgO buffered metal tapes

    International Nuclear Information System (INIS)

    Biaxially textured magnesium oxide (MgO) films deposited by inclined-substrate deposition (ISD) are desirable for rapid production of high-quality template layers for YBCO-coated conductors. High-quality YBCO films were grown on ISD MgO buffered metallic substrates by pulsed laser deposition (PLD). Columnar grains with a roof-tile surface structure were observed in the ISD MgO films. X-ray pole figure analysis revealed that the (002) planes of the ISD MgO films are tilted at an angle from the substrate normal. A small full-width at half maximum (FWHM) of ∼9deg was observed in the φ-scan for ISD MgO films deposited at an inclination angle of 55deg . In-plane texture in the ISD MgO films developed in the first ∼0.5 μm from the substrate surface, and then stabilized with further increases in film thickness. Yttria-stabilized zirconia and ceria buffer layers were deposited on the ISD MgO grown on metallic substrates prior to the deposition of YBCO by PLD. YBCO films with the c-axis parallel to the substrate normal have a unique orientation relationship with the ISD MgO films. An orientation relationship of YBCO(100)||MgO(111) and YBCO(010)||MgO(110) was measured by x-ray pole figure analyses and confirmed by transmission electron microscopy. A Tc of 91 K with a sharp transition and transport Jc of 5.5 x 105 A cm-2 at 77 K in self-field were measured on a YBCO film that was 0.46 μm thick, 4 mm wide and 10 mm long

  5. Adhesion enhancement of hard coatings deposited on flexible plastic substrates using an interfacial buffer layer

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Day-Shan; Wu, Cheng-Yang, E-mail: dsliu@sunws.nfu.edu.t [Institute of Electro-Optical and Materials Science, National Formosa University, Huwei, Taiwan 63201 (China)

    2010-05-05

    An interfacial buffer layer has been developed to improve the silicon oxide (SiO{sub x}) hard coating adhered to a flexible plastic substrate through a consecutive plasma-enhanced chemical vapour deposition process, using the same organosilicon precursor. The adhesion of the hard coating structure, correlated with the buffer layer thickness, was rated by the standard tape-peeling test. An excellent adhesion (rank 5B) was available for the hard coating structure with an interfacial buffer layer deposited on polycarbonate and polymethylmethacrylate substrates. The degree of adhesion strength for the hard coating structures was measured by the standard scratch test. The increase in the critical loads determined from the scratch test was well correlated with the tape-peeling test results. The hard coating structure showed excellent adhesion and also corresponded to a minimum residual stress. The mechanisms responsible for the adhesion enhancement were linked to the specific chemical bonds of the hydrocarbon C-H bond, and cross-linking Si-C bond appeared in the interfacial buffer layer. The C-H bond was recognized as a hydrophobic group that was favourable for minimizing the adsorption of ambient contaminants potentially arising during deposition, while the cross-linking Si-C bond functioned to compensate the large tensile stress residing in the SiO{sub x} hard coating. As a consequence, a close contact and progressive morphology resulting in excellent adhesion were observed at the interface of the hard coating structure with an interfacial buffer layer.

  6. High Quality YBCO Film Growth on SrTiO3-Buffered LaAlO3 Substrate by Full Solution Method

    Institute of Scientific and Technical Information of China (English)

    Sansheng WANG; Lin WANG; Bingfu GU

    2008-01-01

    A full solution method has been developed as a low cost process of YBa2Cu3O7-x (YBCO) coated conductor fabrication.In this study,highly biaxially textured SrTiO3 (STO) buffer layers were fabricated on LaAlO3 (LAO) single crystal substrates by sol-gel method using metal alkoxides as the staring precursor materials.High quality YBCO superconducting film was then fabricated on STO-buffered LAO substrate by triflvoroacetic metalorganic deposition (TFA-MOD) method.For the YBCO superconducting film,only (001) diffraction peaks can be detected by XRD (X-ray diffraction) analysis with no other phases detectable.Especially,In-plane texture of YBCO film is improved compared to that of STO buffer layer from phi scans analysis,which indicates the self-epitaxy phenomenon explained by considering interfacial energy.STO and YBCO films both show c-axis oriented grains growt.h and have uniform surface microstructure.A critical transition temperature,Tc (R=0) of 89.5 K and a critical current density of 2 mA/cm2 (17 K,self-field) were obtained for a 0.2 μm thick YBCO film on STO-buffered LAO substrate.No reaction between YBCO and STO was detected by XRD analysis.This full solution process may provide a promising low cost fabrication route for YBCO coated conductors on metal tape.

  7. Preparation of a Novel Ce0.9La0.1O2/Gd2Zr2O7 Buffer Layer Stack on NiW Alloy Substrates by the MOD Route

    DEFF Research Database (Denmark)

    Yue, Zhao; Grivel, Jean-Claude; Abrahamsen, Asger Bech;

    2011-01-01

    An optimized buffer layer architecture prepared by a metal organic deposition method on biaxially textured metallic substrate is proposed and developed successfully. The major achievement of this work is to choose a ${\\rm Ce}_{0.9}{\\rm La}_{0.1}{\\rm O}_{2}$ layer as cap layer that possesses...... relationship between the buffer layer stack and the metallic substrate were studied by synchrotron x-ray diffraction. Well textured, smooth and crack-free ${\\rm Ce}_{0.9}{\\rm La}_{0.1}{\\rm O}_{2}/{\\rm Gd}_{2}{\\rm Zr}_{2}{\\rm O}_{7}$ buffer layer stacks are obtained, demonstrating the possibility of producing...... a high quality buffer layer stack by a low cost chemical solution deposition route....

  8. The effect of the carbon nanotube buffer layer on the performance of a Li metal battery

    Science.gov (United States)

    Zhang, Ding; Zhou, Yi; Liu, Changhong; Fan, Shoushan

    2016-05-01

    Lithium (Li) metal is one of the most promising candidates as an anode for the next-generation energy storage systems because of its high specific capacity and lowest negative electrochemical potential. But the growth of Li dendrites limits the application of the Li metal battery. In this work, a type of modified Li metal battery with a carbon nanotube (CNT) buffer layer inserted between the separator and the Li metal electrode was reported. The electrochemical results show that the modified batteries have a much better rate capability and cycling performance than the conventional Li metal batteries. The mechanism study by electrochemical impedance spectroscopy reveals that the modified battery has a smaller charge transfer resistance and larger Li ion diffusion coefficient during the deposition process on the Li electrode than the conventional Li metal batteries. Symmetric battery tests show that the interfacial behavior of the Li metal electrode with the buffer layer is more stable than the naked Li metal electrode. The morphological characterization of the CNT buffer layer and Li metal lamina reveals that the CNT buffer layer has restrained the growth of Li dendrites. The CNT buffer layer has great potential to solve the safety problem of the Li metal battery.Lithium (Li) metal is one of the most promising candidates as an anode for the next-generation energy storage systems because of its high specific capacity and lowest negative electrochemical potential. But the growth of Li dendrites limits the application of the Li metal battery. In this work, a type of modified Li metal battery with a carbon nanotube (CNT) buffer layer inserted between the separator and the Li metal electrode was reported. The electrochemical results show that the modified batteries have a much better rate capability and cycling performance than the conventional Li metal batteries. The mechanism study by electrochemical impedance spectroscopy reveals that the modified battery has a

  9. Fractal analysis and atomic force microscopy measurements of surface roughness for Hastelloy C276 substrates and amorphous alumina buffer layers in coated conductors

    Energy Technology Data Exchange (ETDEWEB)

    Feng, F.; Shi, K.; Xiao, S.-Z.; Zhang, Y.-Y. [Applied Superconductivity Research Center, Department of Physics, Tsinghua University, Beijing 100084 (China); Zhao, Z.-J. [School of Physics, Beijing Institute of Technology, Beijing 100081 (China); Wang, Z., E-mail: wangzhi@bit.edu.cn [School of Physics, Beijing Institute of Technology, Beijing 100081 (China); Wei, J.-J.; Han, Z. [Applied Superconductivity Research Center, Department of Physics, Tsinghua University, Beijing 100084 (China)

    2012-02-01

    In coated conductors, surface roughness of metallic substrates and buffer layers could significantly affect the texture of subsequently deposited buffer layers and the critical current density of superconductor layer. Atomic force microscopy (AFM) is usually utilized to measure surface roughness. However, the roughness values are actually relevant to scan scale. Fractal geometry could be exerted to analyze the scaling performance of surface roughness. In this study, four samples were prepared, which were electro polished Hastelloy C276 substrate, mechanically polished Hastelloy C276 substrate and the amorphous alumina buffer layers deposited on both the substrates by ion beam deposition. The surface roughness, described by root mean squared (RMS) and arithmetic average (R{sub a}) values, was analyzed considering the scan scale of AFM measurements. The surfaces of amorphous alumina layers were found to be fractal in nature because of the scaling performance of roughness, while the surfaces of Hastelloy substrates were not. The flatten modification of AFM images was discussed. And the calculation of surface roughness in smaller parts divided from the whole AFM images was studied, compared with the results of actual AFM measurements of the same scan scales.

  10. Graphene on a metal surface with an h-BN buffer layer: gap opening and N-doping

    Science.gov (United States)

    Wang, Tao; Lu, Yunhao; Feng, Y. P.

    2016-04-01

    Graphene grown on a metal surface, Cu(111), with a boron-nitride (h-BN) buffer layer is studied. Our first-principles calculations reveal that charge is transferred from the copper substrate to graphene through the h-BN buffer layer which results in n-doped graphene in the absence of a gate voltage. More importantly, a gap of 0.2 eV, which is comparable to that of a typical narrow gap semiconductor, opens just 0.5 eV below the Fermi level at the Dirac point. The Fermi level can be easily shifted inside this gap to make graphene a semiconductor, which is crucial for graphene-based electronic devices. A graphene-based p-n junction can be realized with graphene eptaxially grown on a metal surface.

  11. Growth of YBCO film on SrRuO3-buffered MgO substrate

    International Nuclear Information System (INIS)

    The superconducting, crystalline, and morphological properties of YBCO films deposited on SrRuO3-buffered MgO substrates were studied at various deposition temperatures. The film deposited at T = 770 deg. C had the best superconducting properties (critical current density of 2.5 x 106 A cm-2 and critical transition temperature of 91 K). Scanning electron micrographs of this film revealed uniform and well-connected grains. X-ray analyses revealed that the Y BCO/SrRuO3/MgO film fabricated at 770 deg. C had good in-plane and out-of-plane textures. Raman spectroscopy showed that this film had the best out-of-plane texture and orthorhombic I domains

  12. Aspartate buffer and divalent metal ions affect oxytocin in aqueous solution and protect it from degradation

    DEFF Research Database (Denmark)

    Avanti, Christina; Oktaviani, Nur Alia; Hinrichs, Wouther L.J.;

    2013-01-01

    is improved by the addition of divalent metal ions (unpublished results). The stabilizing effect of Zn2+ was by far superior compared to that of Mg2+. In addition, it was found that stabilization correlated well with the ability of the divalent metal ions to interact with oxytocin in aspartate buffer...

  13. Biaxially oriented CdTe films on glass substrate through nanostructured Ge/CaF2 buffer layers

    Science.gov (United States)

    Lord, R. J.; Su, P.-Y.; Bhat, I.; Zhang, S. B.; Lu, T.-M.; Wang, G.-C.

    2015-09-01

    Heteroepitaxial CdTe films were grown by metal organic chemical vapor deposition on glass substrates through nanostructured Ge/CaF2 buffer layers which were biaxially oriented. It allows us to explore the structural properties of multilayer biaxial semiconductor films which possess small angle grain boundaries and to test the principle of a solar cell made of such low-cost, low-growth-temperature semiconductor films. Through the x-ray diffraction and x-ray pole figure analysis, the heteroepitaxial relationships of the mutilayered films are determined as [111] in the out-of-plane direction and CdTe//Ge//{ }{{{CaF}}2} in the in-plane direction. The I-V curves measured from an ITO/CdS/CdTe/Ge/CaF2/glass solar cell test structure shows a power conversion efficiency of ˜η = 1.26%, illustrating the initial success of such an approach. The observed non-ideal efficiency is believed to be due to a low shunt resistance and high series resistance as well as some residual large-angle grain boundary effects, leaving room for significant further improvement.

  14. TiN-buffered substrates for photoelectrochemical measurements of oxynitride thin films

    Science.gov (United States)

    Pichler, Markus; Pergolesi, Daniele; Landsmann, Steve; Chawla, Vipin; Michler, Johann; Döbeli, Max; Wokaun, Alexander; Lippert, Thomas

    2016-04-01

    Developing novel materials for the conversion of solar to chemical energy is becoming an increasingly important endeavour. Perovskite compounds based on bandgap tunable oxynitrides represent an exciting class of novel photoactive materials. To date, literature mostly focuses on the characterization of oxynitride powder samples which have undeniable technological interest but do not allow the investigation of fundamental properties such as the role of the crystalline quality and/or the surface crystallographic orientation toward photo-catalytic activity. The challenge of growing high quality oxynitride thin films arises from the availability of a suitable substrate, owing to strict material and processing requirements: effective lattice matching, sufficiently high conductivities, stability under high temperatures and in strongly reducing environments. Here, we have established the foundations of a model system incorporating a TiN-buffer layer which enables fundamental investigations into crystallographic surface orientation and crystalline quality of the photocatalyst against photo(electro)chemical performance to be effectively performed. Furthermore, we find that TiN as current collector enables control over the nitrogen content of oxynitride thin films produced by a modified pulsed laser deposition method and allows the growth of highly ordered LaTiO3-xNx thin films.

  15. Effects of Si doping on the strain relaxation of metamorphic (Al)GaInP buffers grown on GaAs substrates

    International Nuclear Information System (INIS)

    We investigate the effects of Si doping on the strain relaxation of the compositionally step-graded (Al)GaInP buffers grown by metal-organic chemical vapor deposition on (0 0 1) GaAs substrates with different miscuts toward (1 1 1)A. It is found that in the 2° samples, high Si doping can reduce both the α and β dislocation densities by delaying and suppressing the formation of phase separation in the buffer. In contrast, in the 7° samples, Si dopants deteriorate the buffer quality through increasing the dislocation density accompanying with the tilt reduction along the [1 1 0] direction, and a striking feature, bunches of β dislocations away from the interfaces, is observed in the [1 1 0] cross-sectional transmission electron microscopy images. A cross-slip mechanism closely associated with the pinning effect of Si on α dislocation motion is proposed to explain the multiplication of β dislocations. These results indicate that selecting a moderate Si doping density and substrate miscut are critical for the design and fabrication of metamorphic optoelectronic devices.

  16. A possibility of enhancing Jc in MgB2 film grown on metallic hastelloy tape with the use of SiC buffer layer

    International Nuclear Information System (INIS)

    We have grown MgB2 on SiC buffer layer by using metallic Hastelloy tape as the substrate. Hastelloy tape was chosen for its potential practical applications, mainly in the power cable industry. SiC buffer layers were deposited on Hastelloy tapes at 400, 500, and 600 degrees C by using a pulsed laser deposition method, and then by using a hybrid physical-chemical vapor deposition technique, MgB2 films were grown on the three different SiC buffer layers. An enhancement of critical current density values were noticed in the MgB2 films on SiC/Hastelloy deposited at 500 and 600 degrees C. From the surface analysis, smaller and denser grains of MgB2 tapes are likely to cause this enhancement. This result infers that the addition of SiC buffer layers may contribute to the improvement of superconducting properties of MgB2 tapes.

  17. Nanostructured europium oxide thin films deposited by pulsed laser ablation of a metallic target in a He buffer atmosphere

    Energy Technology Data Exchange (ETDEWEB)

    Luna, H.; Franceschini, D. F.; Prioli, R.; Guimaraes, R. B.; Sanchez, C. M.; Canal, G. P.; Barbosa, M. D. L.; Galvao, R. M. O. [Instituto de Fisica, Universidade Federal do Rio de Janeiro, Cx. Postal 68528, Rio de Janeiro, RJ 21941-972 (Brazil); Instituto de Fisica, Universidade Federal Fluminense, Niteroi, RJ 24210-346 (Brazil); Departamento de Fisica, Pontificia Universidade Catolica do Rio de Janeiro, Rua Marques de Sao Vicente 225, 22453-970, Rio de Janeiro, RJ (Brazil); Instituto de Fisica, Universidade Federal Fluminense, Niteroi, RJ 24210-346 (Brazil); Centro Brasileiro de Pesquisas Fisicas, Laboratorio de Plasmas Aplicados, Rua Xavier Sigaud 150, 22290-180, Rio de Janeiro, RJ (Brazil); Instituto de Fisica, Departamento de Fisica Nuclear, Universidade de Sao Paulo, Caixa Postal 66328, 05315-970, Sao Paulo, SP (Brazil); Centro Brasileiro de Pesquisas Fisicas, Laboratorio de Plasmas Aplicados, Rua Xavier Sigaud 150, 22290-180, Rio de Janeiro, RJ (Brazil)

    2010-09-15

    Nanostrucured europium oxide and hydroxide films were obtained by pulsed Nd:YAG (532 nm) laser ablation of a europium metallic target, in the presence of a 1 mbar helium buffer atmosphere. Both the produced film and the ambient plasma were characterized. The plasma was monitored by an electrostatic probe, for plume expansion in vacuum or in the presence of the buffer atmosphere. The time evolution of the ion saturation current was obtained for several probe to substrate distances. The results show the splitting of the plume into two velocity groups, being the lower velocity profile associated with metal cluster formation within the plume. The films were obtained in the presence of helium atmosphere, for several target-to-substrate distances. They were analyzed by Rutherford backscattering spectrometry, x-ray diffraction, and atomic force microscopy, for as-deposited and 600 deg. C treated-in-air samples. The results show that the as-deposited samples are amorphous and have chemical composition compatible with europium hydroxide. The thermally treated samples show x-ray diffraction peaks of Eu{sub 2}O{sub 3}, with chemical composition showing excess oxygen. Film nanostructuring was shown to be strongly correlated with cluster formation, as shown by velocity splitting in probe current versus time plots.

  18. Effects of parylene buffer layer on flexible substrate in organic light emitting diode

    International Nuclear Information System (INIS)

    Parylene was deposited on a bare polyethylene terephthalate (PET) and poly carbonate (PC) film surface to enhance the oxygen and water barrier properties at room temperature. The deposition rate of the parylene was observed to have increased linearly as the working pressure was increased. The oxygen plasma pre-treatment of the PET for the adhesion between bare film and parylene was mostly effective to 5B, while the treatment of N-(2-Aminoethyl)-3-Aminopropylmethyldimethoxysilane solution at PC film resulted in 3B. Surface morphology and roughness were observed by atomic force microscopy and the barrier property was measured by oxygen transmission rate and water vapor permeation test equipments. The oxygen transmission rate (OTR) and water vapor transmission rate (WTR) of the PET film were reduced from 13.2 to 11.3 cc/m2 day and from 4.6 to 2.0 g/m2 day, respectively. When the parylene layer was coated onto the PC film, however, the barrier effects were significant from out of detection limit to 53.9 cc/m2 day for the OTR, and from 24.7 to 3.5 g/m2 day for the WTR. The real organic light emitting diode (OLED) device was fabricated with a parylene coated flexible substrate, which was subsequently deposited by transparent conducting layer and scratch-resistant layer. The initial brightness of the OLED device with a parylene buffer layer was 173 cd/cm2, and 70% of its initial brightness was maintained after 40,000 s

  19. Ligand-enhanced electrokinetic remediation of metal-contaminated marine sediments with high acid buffering capacity.

    Science.gov (United States)

    Masi, Matteo; Iannelli, Renato; Losito, Gabriella

    2016-06-01

    The suitability of electrokinetic remediation for removing heavy metals from dredged marine sediments with high acid buffering capacity was investigated. Laboratory-scale electrokinetic remediation experiments were carried out by applying two different voltage gradients to the sediment (0.5 and 0.8 V/cm) while circulating water or two different chelating agents at the electrode compartments. Tap water, 0.1 M citric acid and 0.1 M ethylenediaminetetraacetic acid (EDTA) solutions were used respectively. The investigated metals were Zn, Pb, V, Ni and Cu. In the unenhanced experiment, the acid front could not propagate due to the high acid buffering capacity of the sediments; the production of OH(-) ions at the cathode resulted in a high-pH environment causing the precipitation of CaCO3 and metal hydroxides. The use of citric acid prevented the formation of precipitates, but solubilisation and mobilisation of metal species were not sufficiently achieved. Metal removal was relevant when EDTA was used as the conditioning agent, and the electric potential was raised up to 0.8 V/cm. EDTA led to the formation of negatively charged complexes with metals which migrated towards the anode compartment by electromigration. This result shows that metal removal from sediments with high acid buffering capacity may be achieved by enhancing the electrokinetic process by EDTA addition when the acidification of the medium is not economically and/or environmentally sustainable. PMID:26490900

  20. Investigations into alterntive substrate, absorber, and buffer layer processing for Cu(In,Ga)Se{sub 2}-based solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Tuttle, J.R.; Berens, T.A.; Keane, J. [National Renewable Energy Lab., Golden, CO (United States)] [and others

    1996-05-01

    High-performance Cu(In,Ga)Se{sub 2}(CIGS)-based solar cells are presently fabricated within a narrow range of processing options. In this contribution, alternative substrate, absorber, and buffer layer processing is considered. Cell performance varies considerably when alternative substrates are employed. These variations are narrowed with the addition of Na via a Na{sub 2}S compound. Sputtered and electrodeposited CIGS precursors and completed absorbers show promise as alternatives to evaporation. A recrystallization process is required to improve their quality. (In,Ga){sub y}Se buffer layers contribute to cell performance above 10. Further improvements in these alternatives will lead to combined cell performance greater than 10% in the near term.

  1. The surface morphologies of (Pb, Sr) TiO3 thin film fabricated on Si-buffered Pt/Ti/SiO2/Si substrate

    Institute of Scientific and Technical Information of China (English)

    LI; Tao; GU; Hong-wei

    2005-01-01

    (Pb, Sr)TiO3 (PST) thin film are fabricated by RF magnetron sputtering on Si-buffered Pt/Ti/SiO2/Si substrates with different buffer layer deposition time. Surface morphologies of the buffer layer indicate an improving surface roughness and larger grains with the prolongation of sputtering time. Deposition of PST thin films shows excellent surface fluctuation filling ability to improve the surface roughness of substrates. PST surface morphologies exhibit apparently different grain forms according to the preparation time durance of buffer layer.

  2. Study of High Quality Indium Nitride Films Grown on Si(100 Substrate by RF-MOMBE with GZO and AlN Buffer Layers

    Directory of Open Access Journals (Sweden)

    Wei-Chun Chen

    2012-01-01

    Full Text Available Wurtzite structure InN films were prepared on Si(100 substrates using radio-frequency metal-organic molecular beam epitaxy (RF-MOMBE system. Ga-doped ZnO (GZO and Amorphous AlN (a-AlN film were used as buffer layers for InN films growth. Structural, surface morphology and optical properties of InN films were investigated by X-ray diffraction (XRD, field emission scanning electron microscopy (FE-SEM, transmission electron microscopy (TEM, and photoluminescence (PL. XRD results indicated that all InN films exhibited preferred growth orientation along the c-axis with different intermediate buffers. TEM images exhibit the InN/GZO growth by two-dimensional mode and thickness about 900 nm. Also, the InN films can be obtained by growth rate about ~1.8 μm/h. Optical properties indicated that the band gap of InN/GZO is about 0.79 eV. These results indicate that the control of buffer layer is essential for engineering the growth of InN on silicon wafer.

  3. A new strategy to stabilize oxytocin in aqueous solutions: I. The effects of divalent metal ions and citrate buffer.

    Science.gov (United States)

    Avanti, Christina; Amorij, Jean-Pierre; Setyaningsih, Dewi; Hawe, Andrea; Jiskoot, Wim; Visser, Jan; Kedrov, Alexej; Driessen, Arnold J M; Hinrichs, Wouter L J; Frijlink, Henderik W

    2011-06-01

    In the current study, the effect of metal ions in combination with buffers (citrate, acetate, pH 4.5) on the stability of aqueous solutions of oxytocin was investigated. Both monovalent metal ions (Na(+) and K(+)) and divalent metal ions (Ca(2+), Mg(2+), and Zn(2+)) were tested all as chloride salts. The effect of combinations of buffers and metal ions on the stability of aqueous oxytocin solutions was determined by RP-HPLC and HP-SEC after 4 weeks of storage at either 4°C or 55°C. Addition of sodium or potassium ions to acetate- or citrate-buffered solutions did not increase stability, nor did the addition of divalent metal ions to acetate buffer. However, the stability of aqueous oxytocin in aqueous formulations was improved in the presence of 5 and 10 mM citrate buffer in combination with at least 2 mM CaCl(2), MgCl(2), or ZnCl(2) and depended on the divalent metal ion concentration. Isothermal titration calorimetric measurements were predictive for the stabilization effects observed during the stability study. Formulations in citrate buffer that had an improved stability displayed a strong interaction between oxytocin and Ca(2+), Mg(2+), or Zn(2+), while formulations in acetate buffer did not. In conclusion, our study shows that divalent metal ions in combination with citrate buffer strongly improved the stability of oxytocin in aqueous solutions.

  4. Cheese whey as substrate of batch hydrogen production: effect of temperature and addition of buffer.

    Science.gov (United States)

    Muñoz-Páez, K M; Poggi-Varaldo, H M; García-Mena, J; Ponce-Noyola, M T; Ramos-Valdivia, A C; Barrera-Cortés, J; Robles-González, I V; Ruiz-Ordáz, N; Villa-Tanaca, L; Rinderknecht-Seijas, N

    2014-05-01

    The aim of this work was to evaluate the effect of buffer addition and process temperature (ambient and 35°C) on H2 production in batch fermentation of cheese whey (CW). When the H2 production reached a plateau, the headspace of the reactors were flushed with N2 and reactors were re-incubated. Afterwards, only the reactors with phosphate buffer showed a second cycle of H2 production and 48% more H2 was obtained. The absence of a second cycle in non-buffered reactors could be related to a lower final pH than in the buffered reactors; the low pH could drive the fermentation to solvents production. Indeed a high solvent production was observed in non-buffered bioreactors as given by low ρ ratios (defined as the ratio between sum of organic acid production and sum of solvents production). Regarding the process temperatures, no significant difference between the H2 production of reactors incubated at ambient temperature and at 35°C was described. After flushing the headspace of bioreactors with N2 at the end of the second cycle, the H2 production did not resume (in all reactors).

  5. Epitaxial ZnO films grown on ZnO-buffered c-plane sapphire substrates by hydrothermal method

    International Nuclear Information System (INIS)

    ZnO films are hydrothermally grown on ZnO-buffered c-plane sapphire substrates at a low temperature of 70 deg. C. A radio-frequency (RF) reactive magnetron sputtering has been used to grow the ZnO buffer layers. X-ray diffraction, scanning electron microscopy, and room temperature photoluminescence are carried out to characterize the structure, morphology and optical property of the films. It is found that the films are stress-free. The epitaxial relationship between the ZnO film and the c-plane sapphire substrate is found to be ZnO (0 0 0 1)||Al2O3 (0 0 0 1) in the surface normal and ZnO[101-bar 0]||Al2O3[112-bar 0] in plane. Sapphire treatment, as such acid etching, nitridation, and oxidation are found to influence the nucleation of the film growth, and the buffer layers determine the crystalline quality of the ZnO films. The maximum PL quantum efficiency of ZnO films grown with hydrothermal method is found to be about 80% of single-crystal ZnO.

  6. Preparation of MgO Films as Buffer Layers by Laser-ablation at Various Substrate Temperatures

    Institute of Scientific and Technical Information of China (English)

    LI Ling; WANG Chuanbin; WANG Fang; SHEN Qiang; ZHANG Lianmeng

    2011-01-01

    MgO thin films were deposited on Si(100) substrates by laser ablation under various substrate temperatures (Tsub),expecting to provide a candidate buffer layer for the textured growth of functional perovskite oxide films on Si substrates.The effect of Tsub on the preferred orientation,crystallinity and surface morphology of the films was investigated.MgO films in single-phase were obtained at 473-973 K.With increasing Tsub,the preferred orientation of the films changed from (200) to (111).The crystallinity and surface morphology was different too,depending on Tsub·At Tsub=673 K,the MgO film became uniform and smooth,exhibiting high crystallinity and a dense texture.

  7. Application of a mixed metal oxide catalyst to a metallic substrate

    Science.gov (United States)

    Sevener, Kathleen M. (Inventor); Lohner, Kevin A. (Inventor); Mays, Jeffrey A. (Inventor); Wisner, Daniel L. (Inventor)

    2009-01-01

    A method for applying a mixed metal oxide catalyst to a metallic substrate for the creation of a robust, high temperature catalyst system for use in decomposing propellants, particularly hydrogen peroxide propellants, for use in propulsion systems. The method begins by forming a prepared substrate material consisting of a metallic inner substrate and a bound layer of a noble metal intermediate. Alternatively, a bound ceramic coating, or frit, may be introduced between the metallic inner substrate and noble metal intermediate when the metallic substrate is oxidation resistant. A high-activity catalyst slurry is applied to the surface of the prepared substrate and dried to remove the organic solvent. The catalyst layer is then heat treated to bind the catalyst layer to the surface. The bound catalyst layer is then activated using an activation treatment and calcinations to form the high-activity catalyst system.

  8. Thickness-Dependent Properties of YBCO Films Grown on GZO/CLO-Buffered NiW Substrates

    DEFF Research Database (Denmark)

    Malmivirta, M.; Huhtinen, H.; Yue, Zhao;

    2016-01-01

    To study the role of novel Gd2Zr2O7/Ce0.9La0.1O2 buffer layer structure on a biaxially textured NiW substrate, a set of YBa2Cu3O7−δ (YBCO) films with different thicknesses were prepared by pulsed laser deposition (PLD). Interface imperfections as well as thickness-dependent structural properties...... be successfully used for films with various thicknesses. This issue is linked to the extremely susceptible growth method of PLD when compared to the commonly used chemical deposition methods. Nevertheless, PLD-grown films can give a hint on what to concentrate to be able to further improve the buffer layer...

  9. Control of threading dislocations by Al(Ga)InAs reverse-graded buffers grown on GaAs substrates

    Science.gov (United States)

    He, Yang; Sun, Yurun; Song, Yan; Zhao, Yongming; Yu, Shuzhen; Dong, Jianrong

    2016-06-01

    High-quality strain-relaxed InP layers with undulating step-graded Al(Ga)InAs buffers were grown on GaAs substrates by metal–organic chemical vapor deposition. Transmission electron microscopy, high-resolution electron microscopy (HREM), atom force microscopy, and photoluminescence were carried out to characterize the metamorphic buffers. V-shaped dislocations in [001] Al(Ga)InAs reverse-graded layers were observed by HREM and the behavior of reverse-graded layers was simulated theoretically using analytical models. Both the experimental and theoretical results indicated that the insertion of reverse-graded layers with appropriately designed thicknesses and In grading coefficients promotes the annihilation and coalescence reactions between threading dislocations and reduces threading dislocations density.

  10. Cube Texture Formation of Cu-33at.%Ni Alloy Substrates and CeO2 Buffer Layer for YBCO Coated Conductors

    DEFF Research Database (Denmark)

    Tian, Hui; Li, Suo Hong; Ru, Liang Ya;

    2014-01-01

    Cube texture formation of Cu-33 at.%Ni alloy substartes and CeO2 buffer layer prepared by chemical solution deposition on the textured substrate were investigated by electron back scattered diffraction (EBSD) and XRD technics systematically. The results shown that a strong cube textured Cu-33at...... of epitaxially grown CeO2 buffer layer was 95 % (

  11. High-Quality AgGaTe2 Layers on Si Substrates with Ag2Te Buffer Layers

    Science.gov (United States)

    Uruno, Aya; Kobayashi, Masakazu

    2016-09-01

    AgGaTe2 layers were successfully grown on Si substrates by the close-spaced sublimation method. The Si substrates were confirmed to be etched during AgGaTe2 layer growth when the layer was grown directly on the substrate. To eliminate melt-back etching, a buffer layer of Ag2Te was introduced. It was found that the Ag2Te buffer layer changed into the AgGaTe2 layer during the growth process, and a uniform AgGaTe2 layer with an abrupt interface was formed. Both the diffusion of Ga into Ag2Te and the growth of AgGaTe2 occurred simultaneously. It was confirmed that uniform AgGaTe2 layers could be formed without any traces of the Ag2Te layer or melt-back etching by tuning the growth parameters. A solar cell was also fabricated using the p-AgGaTe2/n-Si heterojunction. This solar cell showed conversion efficiency of approximately 3%.

  12. Process for forming a metal compound coating on a substrate

    International Nuclear Information System (INIS)

    This patent describes a method of coating a substrate with a thin layer of a metal compound by forming a dispersion of an electrophoretically active organic colloid and a precursor of the metal compound in an electrolytic cell in which the substrate is an electrode. Upon application of an electric potential, the electrode is coated with a mixture of the organic colloid and the precursor to the metal compound, and the coated substrate is then heated in the presence of an atmosphere or vacuum to decompose the organic colloid and form a coating of either a combination of metal compound and carbon, or optionally forming a porous metal compound coating by heating to a temperature high enough to chemically react the carbon

  13. Process for forming a metal compound coating on a substrate

    Science.gov (United States)

    Sharp, D.J.; Vernon, M.E.; Wright, S.A.

    1988-06-29

    A method of coating a substrate with a thin layer of a metal compound by forming a dispersion of an electrophoretically active organic colloid and a precursor of the metal compound in an electrolytic cell in which the substrate is an electrode. Upon application of an electric potential, the electrode is coated with a mixture of the organic colloid and the precursor to the metal compound, and the coated substrate is then heated in the presence of an atmosphere or vacuum to decompose the organic colloid and form a coating of either a combination of metal compound and carbon, or optionally forming a porous metal compound coating by heating to a temperature high enough to chemically react the carbon.

  14. Improved heteroepitaxial MBE GaN growth with a Ga metal buffer layer

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Yihwan; Subramanya, Sudhir G.; Krueger, Joachim; Siegle, Henrik; Shapiro, Noad; Armitage, Robert; Feick, Henning; Weber, Eicke R.; Kisielowski, Christian; Yang, Yi; Cerrina, Franco

    2000-05-15

    We demonstrate that the use of pure gallium (Ga) as a buffer layer results in improved crystal quality of GaN epilayers grown by plasma-assisted molecular beam epitaxy on c-plane sapphire. The resulting epilayers show electron Hall mobilities as high as 400 cm 2 /Vs at a background carrier concentration of 4 x 10 17 cm -3 , an outstanding value for an MBE-grown GaN layer on sapphire. Structural properties are also improved; the asymmetric (101) X-ray rocking curve width is drastically reduced with respect to that of the reference GaN epilayer grown on a low-temperature GaN buffer layer. Nitrided Ga metal layers were investigated for different Ga deposition time. These layers can be regarded as templates for the subsequent Ga main layer growth. It was found that there is an optimum Ga metal layer deposition time for improving the electron mobility in the epilayer. Heating of the Ga metal layer to the epilayer growth temperature under nitrogen plasma is found to be sufficient to produce highly oriented GaN crystals. However, nonuniform surface morphology and incomplete surface coverage were observed after nitridation of comparatively thick Ga metal layers. This is shown to be the reason for the decreasing electron mobility of the epilayers as the Ga metal layer thickness exceeds the optimum value.

  15. Improved heteroepitaxial MBE GaN growth with a Ga metal buffer layer

    International Nuclear Information System (INIS)

    We demonstrate that the use of pure gallium (Ga) as a buffer layer results in improved crystal quality of GaN epilayers grown by plasma-assisted molecular beam epitaxy on c-plane sapphire. The resulting epilayers show electron Hall mobilities as high as 400 cm 2 /Vs at a background carrier concentration of 4 x 10 17 cm -3 , an outstanding value for an MBE-grown GaN layer on sapphire. Structural properties are also improved; the asymmetric (101) X-ray rocking curve width is drastically reduced with respect to that of the reference GaN epilayer grown on a low-temperature GaN buffer layer. Nitrided Ga metal layers were investigated for different Ga deposition time. These layers can be regarded as templates for the subsequent Ga main layer growth. It was found that there is an optimum Ga metal layer deposition time for improving the electron mobility in the epilayer. Heating of the Ga metal layer to the epilayer growth temperature under nitrogen plasma is found to be sufficient to produce highly oriented GaN crystals. However, nonuniform surface morphology and incomplete surface coverage were observed after nitridation of comparatively thick Ga metal layers. This is shown to be the reason for the decreasing electron mobility of the epilayers as the Ga metal layer thickness exceeds the optimum value

  16. The W-W02 Oxygen Fugacity Buffer at High Pressures and Temperatures: Implications for f02 Buffering and Metal-silicate Partitioning

    Science.gov (United States)

    Shofner, G. A.; Campbell, A. J.; Danielson, L.; Righter, K.

    2013-01-01

    Oxygen fugacity (fO2) controls multivalent phase equilibria and partitioning of redox-sensitive elements, and it is important to understand this thermodynamic parameter in experimental and natural systems. The coexistence of a metal and its oxide at equilibrium constitutes an oxygen buffer which can be used to control or calculate fO2 in high pressure experiments. Application of 1-bar buffers to high pressure conditions can lead to inaccuracies in fO2 calculations because of unconstrained pressure dependencies. Extending fO2 buffers to pressures and temperatures corresponding to the Earth's deep interior requires precise determinations of the difference in volume (Delta) V) between the buffer phases. Synchrotron x-ray diffraction data were obtained using diamond anvil cells (DAC) and a multi anvil press (MAP) to measure unit cell volumes of W and WO2 at pressures and temperatures up to 70 GPa and 2300 K. These data were fitted to Birch-Murnaghan 3rd-order thermal equations of state using a thermal pressure approach; parameters for W are KT = 306 GPa, KT' = 4.06, and aKT = 0.00417 GPa K-1. Two structural phase transitions were observed for WO2 at 4 and 32 GPa with structures in P21/c, Pnma and C2/c space groups. Equations of state were fitted for these phases over their respective pressure ranges yielding the parameters KT = 190, 213, 300 GPa, KT' = 4.24, 5.17, 4 (fixed), and aKT = 0.00506, 0.00419, 0.00467 GPa K-1 for the P21/c, Pnma and C2/c phases, respectively. The W-WO2 buffer (WWO) was extended to high pressure by inverting the W and WO2 equations of state to obtain phase volumes at discrete pressures (1-bar to 100 GPa, 1 GPa increments) along isotherms (300 to 3000K, 100 K increments). The slope of the absolute fO2 of the WWO buffer is positive with increasing temperature up to approximately 70 GPa and is negative above this pressure. The slope is positive along isotherms from 1000 to 3000K with increasing pressure up to at least 100 GPa. The WWO buffer is at

  17. Heteroepitaxial growth of nonpolar Cu-doped ZnO thin film on MnS-buffered (100) Si substrate

    Science.gov (United States)

    Nakamura, Tatsuru; Nguyen, Nam; Nagata, Takahiro; Takahashi, Kenichiro; Ri, Sung-Gi; Ishibashi, Keiji; Suzuki, Setsu; Chikyow, Toyohiro

    2015-06-01

    The preparation of nonpolar ZnO and Cu-doped ZnO thin films on Si substrates was studied for the application to the fabrication of green-light-emitting diodes. The use of rocksalt MnS and wurtzite AlN as buffer layers is a key technology for achieving the heteroepitaxial growth of nonpolar ZnO thin film on a (100) Si substrate. X-ray diffraction and photoluminescence measurements revealed that deposition under a high oxygen partial pressure (∼1 Torr) can enhance the nonpolar crystallization of undoped ZnO, and can simultaneously suppress the formation of defects such as oxygen vacancies. These techniques can be also applied to the growth of Cu-doped ZnO. A room-temperature photoluminescence study revealed that nonpolar [11\\bar{2}0]-oriented Cu-doped ZnO film exhibits enhanced green emission owing to the doped Cu ions.

  18. Comparison of different pathways in metamorphic graded buffers on GaAs substrate: Indium incorporation with surface roughness

    International Nuclear Information System (INIS)

    Highlights: • In(Al,Ga)As metamorphic buffers on GaAs have been grown. • Surface morphology, strain relaxation and compositional variation have been studied. • Al containing buffers shows inferior surface roughness. • Surface roughness modulates the indium incorporation rate. - Abstract: In this work, compositionally graded In(Al,Ga)As metamorphic buffers (MBs) on GaAs substrate have been grown by MBE through three different paths. A comparative study has been done to comprehend the effect of underlying MB on the constant composition InAlAs healing layer by analyzing the relaxation behaviour, composition and surface morphology of the grown structures. The compositional variation between the constant composition healing layers on top of graded MB has been observed in all three samples although the growth conditions have been kept same. Indium incorporation rate has been found to be dependent on underlying MB. By combining the result of atomic force microscopy, photo-luminescence and X-ray reciprocal space mapping, varying surface roughness has been proposed as the probable driving force behind different Indium incorporation rate

  19. Comparison of different pathways in metamorphic graded buffers on GaAs substrate: Indium incorporation with surface roughness

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Rahul, E-mail: rkp203@gmail.com [Advanced Technology Development Centre, Indian Institute of Technology, Kharagpur 721302 (India); Mukhopadhyay, P. [Rajendra Mishra School of Engineering Entrepreneurship, Indian Institute of Technology, Kharagpur 721302 (India); Bag, A.; Jana, S. Kr. [Advanced Technology Development Centre, Indian Institute of Technology, Kharagpur 721302 (India); Chakraborty, A. [Department of Electronics and Electrical Communication Engineering, Indian Institute of Technology, Kharagpur 721 302 (India); Das, S.; Mahata, M. Kr. [Advanced Technology Development Centre, Indian Institute of Technology, Kharagpur 721302 (India); Biswas, D. [Department of Electronics and Electrical Communication Engineering, Indian Institute of Technology, Kharagpur 721 302 (India)

    2015-01-01

    Highlights: • In(Al,Ga)As metamorphic buffers on GaAs have been grown. • Surface morphology, strain relaxation and compositional variation have been studied. • Al containing buffers shows inferior surface roughness. • Surface roughness modulates the indium incorporation rate. - Abstract: In this work, compositionally graded In(Al,Ga)As metamorphic buffers (MBs) on GaAs substrate have been grown by MBE through three different paths. A comparative study has been done to comprehend the effect of underlying MB on the constant composition InAlAs healing layer by analyzing the relaxation behaviour, composition and surface morphology of the grown structures. The compositional variation between the constant composition healing layers on top of graded MB has been observed in all three samples although the growth conditions have been kept same. Indium incorporation rate has been found to be dependent on underlying MB. By combining the result of atomic force microscopy, photo-luminescence and X-ray reciprocal space mapping, varying surface roughness has been proposed as the probable driving force behind different Indium incorporation rate.

  20. Oxide film on metal substrate reduced to form metal-oxide-metal layer structure

    Science.gov (United States)

    Youngdahl, C. A.

    1967-01-01

    Electrically conductive layer of zirconium on a zirconium-oxide film residing on a zirconium substrate is formed by reducing the oxide in a sodium-calcium solution. The reduced metal remains on the oxide surface as an adherent layer and seems to form a barrier that inhibits further reaction.

  1. A new strategy to stabilize oxytocin in aqueous solutions : I. The effects of divalent metal ions and citrate buffer

    NARCIS (Netherlands)

    Avanti, Christina; Amorij, Jean-Pierre; Setyaningsih, Dewi; Hawe, Andrea; Jiskoot, Wim; Visser, Jan; Kedrov, Alexej; Driessen, Arnold J. M.; Hinrichs, Wouter L. J.; Frijlink, Henderik W.

    2011-01-01

    In the current study, the effect of metal ions in combination with buffers (citrate, acetate, pH 4.5) on the stability of aqueous solutions of oxytocin was investigated. Both monovalent metal ions (Na+and K+) and divalent metal ions (Ca2+, Mg2+, and Zn2+) were tested all as chloride salts. The effec

  2. Tuning Fluorescence Direction with Plasmonic Metal–Dielectric– Metal Substrates

    OpenAIRE

    Choudhury, Sharmistha Dutta; Badugu, Ramachandram; Nowaczyk, Kazimierz; Ray, Krishanu; Lakowicz, Joseph R.

    2013-01-01

    Controlling the emission properties of fluorophores is essential for improving the performance of fluorescence-based techniques in modern biochemical research, medical diagnosis, and sensing. Fluorescence emission is isotropic in nature, which makes it difficult to capture more than a small fraction of the total emission. Metal– dielectric–metal (MDM) substrates, discussed in this Letter, convert isotropic fluorescence into beaming emission normal to the substrate. This improves fluorescence ...

  3. Effects of Varied Cleaning Methods on Ni-5% W Substrate for Dip-Coating of Water-based Buffer Layers: An X-ray Photoelectron Spectroscopy Study

    OpenAIRE

    Isabel Van Driessche; Ruben Hühne; Els Bruneel; Vyshnavi Narayanan

    2012-01-01

    This work describes various combinations of cleaning methods involved in the preparation of Ni-5% W substrates for the deposition of buffer layers using water-based solvents. The substrate has been studied for its surface properties using X-ray photoelectron spectroscopy (XPS). The contaminants in the substrates have been quantified and the appropriate cleaning method was chosen in terms of contaminants level and showing good surface crystallinity to further consider them for depositing chemi...

  4. Effect of CoSi2 buffer layer on structure and magnetic properties of Co films grown on Si (001) substrate

    International Nuclear Information System (INIS)

    Buffer layer provides an opportunity to enhance the quality of ultrathin magnetic films. In this paper, Co films with different thickness of CoSi2 buffer layers were grown on Si (001) substrates. In order to investigate morphology, structure, and magnetic properties of films, scanning tunneling microscope (STM), low energy electron diffraction (LEED), high resolution transmission electron microscopy (HRTEM), and surface magneto-optical Kerr effect (SMOKE) were used. The results show that the crystal quality and magnetic anisotropies of the Co films are strongly affected by the thickness of CoSi2 buffer layers. Few CoSi2 monolayers can prevent the interdiffusion of Si substrate and Co film and enhance the Co film quality. Furthermore, the in-plane magnetic anisotropy of Co film with optimal buffer layer shows four-fold symmetry and exhibits the two-jumps of magnetization reversal process, which is the typical phenomenon in cubic (001) films. (paper)

  5. Influence of double AlN buffer layers on the qualities of GaN films prepared by metal-organic chemical vapour deposition

    Institute of Scientific and Technical Information of China (English)

    Lin Zhi-Yu; Hao Yue; Zhang Jin-Cheng; Zhou Hao; Li Xiao-Gang; Meng Fan-Na; Zhang Lin-Xia; Ai Shan; Xu Sheng-Rui; Zhao Yi

    2012-01-01

    In this paper we report that the GaN thin film is grown by metal-organic chemical vapour deposition on a sapphire (0001) substrate with double AlN buffer layers.The buffer layer consists of a low-temperature (LT) AlN layer and a high-temperature (HT) AlN layer that are grown at 600 ℃ and 1000 ℃,respectively.It is observed that the thickness of the LT-AlN layer drastically influences the quality of GaN thin film,and that the optimized 4.25-min-LT-AlN layer minimizes the dislocation density of GaN thin film.The reason for the improved properties is discussed in this paper.

  6. Analysis and optimization of oxide buffer layers related to YBCO films deposited by CSD and MOCVD on biaxially textured NiW substrates

    International Nuclear Information System (INIS)

    The studies based on epitaxial buffer layers of CeO2 and Yttria-stabilised ZrO2 (YSZ) having been deposited on biaxially textured nickel substrates using thermal reactive evaporation and rf sputtering in continuous deposition processes in reel-to-reel systems. Starting from the well known architecture of CeO2/YSZ/CeO2 the thickness of the different buffer layers was varied. Misorientation, porosity and roughness was analyzed and optimized for YBCO deposition by MOCVD und CSD. The grain morphology and the behavior of the grain boundary networks in YBCO coated conductors have been shown to depend on both the YBCO deposition method and the buffers layer. The possibility of using only one and two buffers layer and conductive layers of perovskite type was studied. X-ray-diffraction, SEM and TEM have been used to investigate the microstructure of both the buffer layers and the YBCO films. Optimal growth conditions of YBCO for the different buffer layers have been determined. YBCO films were deposited by CSD, MOCVD and for comparison by high pressure dc sputtering, resulting on CeO2/YSZ/CeO2 buffered substrates Jc values higher than 2 MA/cm2. The resulting superconducting properties were measured by inductive characterization and by Hall probe measurements of the magnetic field due to induced magnetization currents. (orig.)

  7. LSMO thin films with high metal–insulator transition temperature on buffered SOI substrates for uncooled microbolometers

    Energy Technology Data Exchange (ETDEWEB)

    Chromik, Š., E-mail: stefan.chromik@savba.sk [Institute of Electrical Engineering, SAS, Dúbravská cesta 9, 841 04 Bratislava (Slovakia); Štrbík, V.; Dobročka, E. [Institute of Electrical Engineering, SAS, Dúbravská cesta 9, 841 04 Bratislava (Slovakia); Roch, T. [Department of Experimental Physics, Faculty of Mathematics, Physics and Informatics, Comenius University, 84248 Bratislava (Slovakia); Rosová, A.; Španková, M.; Lalinský, T.; Vanko, G.; Lobotka, P. [Institute of Electrical Engineering, SAS, Dúbravská cesta 9, 841 04 Bratislava (Slovakia); Ralbovský, M. [Slovak Institute of Metrology, Karloveská 63, 842 55 Bratislava (Slovakia); Choleva, P. [Vorarlberg University of Applied Sciences, Dornbirn A-6850 (Austria)

    2014-09-01

    Highlights: • SOI substrate for uncooled bolometer. • LSMO thin films on Bi{sub 4}Ti{sub 3}O{sub 12}/CeO{sub 2}/YSZ/SOI substrate. • The highest resistivity of metal–insulator transition is at temperature T{sub P} above 400 K. • TCR coefficient about 3.4% K{sup −1} at 325 K. • Rotation of Bi{sub 4}Ti{sub 3}O{sub 12} and LSMO films of 45° with regard to YSZ and SOI substrate. - Abstract: La{sub 0.67}Sr{sub 0.33}MnO{sub 3} (LSMO) thin films have been grown by a pulsed laser deposition (PLD) on Bi{sub 4}Ti{sub 3}O{sub 12}(BTO)/CeO{sub 2}/YSZ buffered silicon-on-insulator (SOI) substrates. We compare the properties of these films with results of other authors. We analyse structural properties of LSMO/BTO/CeO{sub 2}/YSZ/SOI multilayer structure prepared using PLD. Electrical measurements have shown that the temperature corresponding to maximum of resistance derivative (operating temperature of a microbolometer) is about 330 K (well above room temperature) and the highest resistivity of metal–insulator transition is at temperature (T{sub P}) above 400 K. Temperature coefficient of the resistance (TCR) has achieved values of 3.4% K{sup −1} at 325 K for some LSMO films. Transmission electron microscopy analysis has confirmed epitaxial growth of all the layers and showed a mosaic character of the LSMO films due to strain relaxation.

  8. High temperature coefficient of resistance of low-temperature-grown VO2 films on TiO2-buffered SiO2/Si (100) substrates

    International Nuclear Information System (INIS)

    The introduction of a TiO2 buffer layer significantly improved the temperature coefficient of resistance (TCR), a measure of the sharpness of the metal–insulator transition, for films of VO2 grown on SiO2/Si (100) substrates at growth temperatures below 670 K. X-ray diffraction and Raman scattering measurements revealed that polycrystalline VO2 films were formed on the TiO2-buffered substrates at low temperatures below 600 K, whereas amorphous films were formed at these temperatures on SiO2/Si (100) substrates without a TiO2 buffer layer. Electron microscopy studies confirmed that the TiO2 buffer layer enhanced the grain growth of VO2 films at low growth temperatures. The VO2 films grown at 600 K on TiO2-buffered substrates showed a large TCR of more than 80%/K as a result of the improved crystallinity and grain size of the VO2 films. Our results provide an effective approach toward the integration of VO2-based devices onto Si platforms at process temperatures below 670 K

  9. Perpendicularly magnetized (001)-textured D022 MnGa films grown on an (Mg0.2Ti0.8)O buffer with thermally oxidized Si substrates

    International Nuclear Information System (INIS)

    We report the growth of (001)-textured polycrystalline D022 MnGa films with perpendicular magnetic anisotropy (PMA) on thermally oxidized Si substrates using an (Mg0.2Ti0.8)O (MTO) buffer layer. The ordered D022 MnGa film grown at the optimum substrate temperature of 530 °C on the MTO buffer layer shows PMA with magnetization of 80 kA/m, PMA energy density of 0.28 MJ/m3, and coercivity of 2.3 T. The scanning transmission electron microscope analysis confirms the formation of a highly (001)-textured structure and the elementally sharp interfaces between the MTO layer and the MnGa layer. The achieved D022 MnGa PMA films on an amorphous substrate will provide the possible pathway of integration of a Mn-based PMA film into Si-based substrates

  10. Controlled growth of vertically aligned carbon nanotubes on metal substrates

    Science.gov (United States)

    Gao, Zhaoli

    Carbon nanotube (CNT) is a fascinating material with extraordinary electrical thermal and mechanical properties. Growing vertically aligned CNT (VACNT) arrays on metal substrates is an important step in bringing CNT into practical applications such as thermal interface materials (TIMs) and microelectrodes. However, the growth process is challenging due to the difficulties in preventing catalyst diffusion and controlling catalyst dewetting on metal substrates with physical surface heterogeneity. In this work, the catalyst diffusion mechanism and catalyst dewetting theory were studied for the controlled growth of VACNTs on metal substrates. The diffusion time of the catalyst, the diffusion coefficients for the catalyst in the substrate materials and the number density of catalyst nanoparticles after dewetting are identified as the key parameters, based on which three strategies are developed. Firstly, a fast-heating catalyst pretreatment strategy was used, aiming at preserving the amount of catalyst prior to CNT growth by reducing the catalyst diffusion time. The catalyst lifetime is extended from half an hour to one hour on a patterned Al thin film and a VACNT height of 106 mum, about twenty fold of that reported in the literature, was attained. Secondly, a diffusion barrier layer strategy is employed for a reduction of catalyst diffusion into the substrate materials. Enhancement of VACNT growth on Cu substrates was achieved by adopting a conformal Al2O 3 diffusion barrier layer fabricated by a specially designed atomic layer deposition (ALD) system. Lastly, a novel catalyst glancing angle deposition (GLAD) strategy is performed to manipulate the morphology of a relatively thick catalyst on metal substrates with physical surface heterogeneity, aiming to obtain uniform and dense catalyst nanoparticles after dewetting in the pretreatment process for enhanced VACNT growth. We are able to control the VACNT growth conditions on metal substrates in terms of their

  11. Study of the Nucleation and Growth of YBCO on Oxide Buffered Metallic Tapes

    Energy Technology Data Exchange (ETDEWEB)

    Solovyov, Vyacheslav

    2009-04-10

    The CRADA collaboration concentrated on developing the scientific understanding of the factors necessary for commercialization of high temperature superconductors (HTS) based on the YBCO coated conductor technology for electric power applications. The project pursued the following objectives: 1. Establish the correlations between the YBCO nuclei density and the properties of the CeO{sub 2} layer of the RABiTS{trademark} template; 2. Compare the nucleation and growth of e-beam and MOD based precursors on the buffered RABiTS{trademark} templates and clarify the materials science behind the difference; and 3. Explore routes for the optimization of the nucleation and growth of thick film MOD precursors in order to achieve high critical current densities in thick films. The CRADA work proceeded in two steps: 1. Detailed characterization of epitaxial ceria layers on “model” substrates, such as (001) YSZ and on RABiTS tapes; and 2. Study of YBCO nucleation on well-defined substrates and on long-length RABiTS.

  12. Graded plasma spraying of premixed metalceramic powders on metallic substrates

    Science.gov (United States)

    Lima, C. R. C.; Trevisan, R.-E.

    1997-06-01

    The mismatch between the thermal expansion coefficients of ceramics and metals and the differential stresses it causes at the interface create problems in metal to ceramic joining. Research has been con-ducted to solve this problem in thermal barrier coating technology. Previous studies have considered met-al-ceramic multilayers or graded-coatings, which include a metallic bond coat. In this study, a graded plasma-sprayed metal-ceramic coating is developed using the deposition of premixed metal and ceramic powders without the conventional metallic bond coat. Influences of thickness variations, number, and composition of the layers are investigated. Coatings are prepared by atmospheric plasma-spraying on In-conel 718 superalloy substrates. Ni-Cr-Al and ZrO2 -8 % Y2O3 powders are used for plasma spraying. Ad-hesive and cohesive strength of the coatings are determined. The concentration profile of the elements is determined by x-ray energy-dispersive analysis. The microstructure and morphology of the coatings are investigated by optical and scanning electron microscopy (SEM). Results show that the mixed metal-ce-ramic coating obtained with the deposition of premixed powders is homogeneous. The morphology and microstructure of the coatings are considered satisfactory.

  13. Interaction of silicene and germanene with non-metallic substrates

    Science.gov (United States)

    Houssa, M.; Scalise, E.; van den Broek, B.; Lu, A.; Pourtois, G.; Afanas'ev, V. V.; Stesmans, A.

    2015-01-01

    By using first-principles simulations, we investigate the interaction of silicene and germanene with various non-metallic substrates. We first consider weak van der Waals interactions between the 2D layers and dichalcogenide substrates, like MoX2 (X=S, Se, Te). The buckling of the silicene or germanene layer is correlated to the lattice mismatch between the 2D material and the MoX2 template. The electronic properties of silicene or germanene on these different templates then largely depend on the buckling of the 2D material layer: highly buckled silicene or germanene on MoS2 are predicted to be metallic, while low buckled silicene on MoTe2 is predicted to be semi-metallic, with preserved Dirac cones at the K points. We next study the covalent bonding of silicene and germanene on (0001) ZnS and ZnSe surfaces. On these substrates, silicene or germanene are found to be semiconducting. Remarkably, the nature and magnitude of their energy band gap can be controlled by an out-of-plane electric field.

  14. Doped Y.sub.2O.sub.3 buffer layers for laminated conductors

    Science.gov (United States)

    Paranthaman, Mariappan Parans [Knoxville, TN; Schoop, Urs [Westborough, MA; Goyal, Amit [Knoxville, TN; Thieme, Cornelis Leo Hans [Westborough, MA; Verebelyi, Darren T [Oxford, MA; Rupich, Martin W [Framingham, MA

    2007-08-21

    A laminated conductor includes a metallic substrate having a surface, a biaxially textured buffer layer supported by the surface of the metallic substrate, the biaxially textured buffer layer comprising Y.sub.2O.sub.3 and a dopant for blocking cation diffusion through the Y.sub.2O.sub.3, and a biaxially textured conductor layer supported by the biaxially textured buffer layer.

  15. Effects of annealing in Be/W and Be/C bilayers deposited on Si(0 0 1) substrates with Fe buffer layers

    Energy Technology Data Exchange (ETDEWEB)

    Schinteie, G. [National Institute of Materials Physics, P.O. Box MG-7, 77125 Bucharest-Magurele (Romania); Greculeasa, S.G., E-mail: simona.greculeasa@infim.ro [National Institute of Materials Physics, P.O. Box MG-7, 77125 Bucharest-Magurele (Romania); Bucharest University, Faculty of Physics, 077125 Bucharest-Magurele (Romania); Palade, P.; Lungu, G.A. [National Institute of Materials Physics, P.O. Box MG-7, 77125 Bucharest-Magurele (Romania); Porosnicu, C.; Jepu, I.; Lungu, C.P. [National Institute for Laser, Plasma and Radiation Physics, 77125 Bucharest-Magurele (Romania); Filoti, G.; Kuncser, V. [National Institute of Materials Physics, P.O. Box MG-7, 77125 Bucharest-Magurele (Romania)

    2015-02-15

    Highlights: • Be/W, Be/C layers deposited by TVA on Si substrate with thin sputtered Fe buffers. • Fe films were hydrogenated (300 °C); Be/W and Be/C were annealed in vacuum (600 °C). • Increase of oxidation near the surface; the hydrogenation reduces oxidation. • The annealing induces high interatomic diffusion all over the structure. • Mixed phases are formed by annealing: Fe–Be, Fe–C; no Fe–W phases are evidenced. - Abstract: Atomic intermixing processes in relation to structural aspects and phase formation in Be based thin films subjected to different annealing treatments simulating the case of re-deposited layered structures on plasma facing components in nuclear fusion devices are reported. Accordingly, bilayers of Be/W and Be/C have been deposited on Si(0 0 1) substrates with Fe buffer layers. The Fe films have been prepared by radiofrequency sputtering and further processed by annealing in hydrogen atmosphere at 300 °C, for 90 min, at a pressure of 10 bars of H{sub 2}. After the Be/W and Be/C bilayer deposition by means of thermionic vacuum arc method, annealing in vacuum at 600 °C, for 10 min has been applied to the complex structures. The influence of annealing on the phase composition and atomic intermixing processes in the complex structures has been studied by means of X-ray photoelectron spectroscopy (XPS) and conversion electron Mössbauer spectroscopy (CEMS). The layered structures present an oxidation gradient with oxide phases in the uppermost layers and non-oxidized phases in the lower layers, as observed from the XPS data. The CEMS results revealed that the as-deposited structures contain a main metallic Fe phase and secondary superparamagnetic Fe oxide phases at the Fe/Be interface, while annealed samples present a large contribution of Fe–Be and Fe–C mixtures. The annealing treatment induces considerable atomic interdiffusion, strongly dependent on the nature of the upper layer. In the case of Be/W system, the annealing

  16. Effects of annealing in Be/W and Be/C bilayers deposited on Si(0 0 1) substrates with Fe buffer layers

    International Nuclear Information System (INIS)

    Highlights: • Be/W, Be/C layers deposited by TVA on Si substrate with thin sputtered Fe buffers. • Fe films were hydrogenated (300 °C); Be/W and Be/C were annealed in vacuum (600 °C). • Increase of oxidation near the surface; the hydrogenation reduces oxidation. • The annealing induces high interatomic diffusion all over the structure. • Mixed phases are formed by annealing: Fe–Be, Fe–C; no Fe–W phases are evidenced. - Abstract: Atomic intermixing processes in relation to structural aspects and phase formation in Be based thin films subjected to different annealing treatments simulating the case of re-deposited layered structures on plasma facing components in nuclear fusion devices are reported. Accordingly, bilayers of Be/W and Be/C have been deposited on Si(0 0 1) substrates with Fe buffer layers. The Fe films have been prepared by radiofrequency sputtering and further processed by annealing in hydrogen atmosphere at 300 °C, for 90 min, at a pressure of 10 bars of H2. After the Be/W and Be/C bilayer deposition by means of thermionic vacuum arc method, annealing in vacuum at 600 °C, for 10 min has been applied to the complex structures. The influence of annealing on the phase composition and atomic intermixing processes in the complex structures has been studied by means of X-ray photoelectron spectroscopy (XPS) and conversion electron Mössbauer spectroscopy (CEMS). The layered structures present an oxidation gradient with oxide phases in the uppermost layers and non-oxidized phases in the lower layers, as observed from the XPS data. The CEMS results revealed that the as-deposited structures contain a main metallic Fe phase and secondary superparamagnetic Fe oxide phases at the Fe/Be interface, while annealed samples present a large contribution of Fe–Be and Fe–C mixtures. The annealing treatment induces considerable atomic interdiffusion, strongly dependent on the nature of the upper layer. In the case of Be/W system, the annealing

  17. Enhanced electrical and magnetic properties in La0.7Sr0.3MnO3 thin films deposited on CaTiO3-buffered silicon substrates

    Directory of Open Access Journals (Sweden)

    C. Adamo

    2015-06-01

    Full Text Available We investigate the suitability of an epitaxial CaTiO3 buffer layer deposited onto (100 Si by reactive molecular-beam epitaxy (MBE for the epitaxial integration of the colossal magnetoresistive material La0.7Sr0.3MnO3 with silicon. The magnetic and electrical properties of La0.7Sr0.3MnO3 films deposited by MBE on CaTiO3-buffered silicon (CaTiO3/Si are compared with those deposited on SrTiO3-buffered silicon (SrTiO3/Si. In addition to possessing a higher Curie temperature and a higher metal-to-insulator transition temperature, the electrical resistivity and 1/f noise level at 300 K are reduced by a factor of two in the heterostructure with the CaTiO3 buffer layer. These results are relevant to device applications of La0.7Sr0.3MnO3 thin films on silicon substrates.

  18. Enhanced electrical and magnetic properties in La{sub 0.7}Sr{sub 0.3}MnO{sub 3} thin films deposited on CaTiO{sub 3}-buffered silicon substrates

    Energy Technology Data Exchange (ETDEWEB)

    Adamo, C. [Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853-1501 (United States); Department of Applied Physics, Stanford University, Stanford, California 94305 (United States); Méchin, L.; Guillet, B.; Wu, S.; Routoure, J.-M. [Groupe de Recherche en Informatique, Image, Automatique et Instrumentation de Caen, (GREYC-UMR 6072), CNRS-ENSICAEN—Université de Caen Basse-Normandie, 6 Boulevard Maréchal Juin, 14050 Caen Cedex (France); Heeg, T. [Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853-1501 (United States); Katz, M.; Pan, X. Q. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States); Mercone, S. [Laboratoire de Sciences des Procédés et des Matériaux, UPR3407, CNRS, Institut Galilee, Universite Paris-Nord, Villetaneuse (France); Schubert, J.; Zander, W. [Peter Grünberg Institute (PGI9-IT), JARA-Fundamentals of Future Information Technology, Research Centre Jülich, Jülich D-52425 (Germany); Misra, R. [Department of Physics and Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Schiffer, P. [Department of Physics and Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Department of Physics, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States); and others

    2015-06-01

    We investigate the suitability of an epitaxial CaTiO{sub 3} buffer layer deposited onto (100) Si by reactive molecular-beam epitaxy (MBE) for the epitaxial integration of the colossal magnetoresistive material La{sub 0.7}Sr{sub 0.3}MnO{sub 3} with silicon. The magnetic and electrical properties of La{sub 0.7}Sr{sub 0.3}MnO{sub 3} films deposited by MBE on CaTiO{sub 3}-buffered silicon (CaTiO{sub 3}/Si) are compared with those deposited on SrTiO{sub 3}-buffered silicon (SrTiO{sub 3}/Si). In addition to possessing a higher Curie temperature and a higher metal-to-insulator transition temperature, the electrical resistivity and 1/f noise level at 300 K are reduced by a factor of two in the heterostructure with the CaTiO{sub 3} buffer layer. These results are relevant to device applications of La{sub 0.7}Sr{sub 0.3}MnO{sub 3} thin films on silicon substrates.

  19. Control of metamorphic buffer structure and device performance of InxGa1−xAs epitaxial layers fabricated by metal organic chemical vapor deposition

    International Nuclear Information System (INIS)

    Using a step-graded (SG) buffer structure via metal-organic chemical vapor deposition, we demonstrate a high suitability of In0.5Ga0.5As epitaxial layers on a GaAs substrate for electronic device application. Taking advantage of the technique’s precise control, we were able to increase the number of SG layers to achieve a fairly low dislocation density (∼106 cm−2), while keeping each individual SG layer slightly exceeding the critical thickness (∼80 nm) for strain relaxation. This met the demanded but contradictory requirements, and even offered excellent scalability by lowering the whole buffer structure down to 2.3 μm. This scalability overwhelmingly excels the forefront studies. The effects of the SG misfit strain on the crystal quality and surface morphology of In0.5Ga0.5As epitaxial layers were carefully investigated, and were correlated to threading dislocation (TD) blocking mechanisms. From microstructural analyses, TDs can be blocked effectively through self-annihilation reactions, or hindered randomly by misfit dislocation mechanisms. Growth conditions for avoiding phase separation were also explored and identified. The buffer-improved, high-quality In0.5Ga0.5As epitaxial layers enabled a high-performance, metal-oxide-semiconductor capacitor on a GaAs substrate. The devices displayed remarkable capacitance–voltage responses with small frequency dispersion. A promising interface trap density of 3 × 1012 eV−1 cm−2 in a conductance test was also obtained. These electrical performances are competitive to those using lattice-coherent but pricey InGaAs/InP systems. (paper)

  20. Cube-textured metal substrates for reel-to-reel processing of coated conductors

    Energy Technology Data Exchange (ETDEWEB)

    Wulff, A.C.

    2012-09-15

    This thesis presents the results of a study aimed at investigating important fabrication aspects of reel-to-reel processing of metal substrates for coated conductors and identifying a new substrate candidate material with improved magnetic properties. The effect of mechanical polishing on surface roughness and texture in Ni-5at.%W tapes in the cold-rolled condition was studied as a function of polishing grade. The surface roughness of the tape in the polished and annealed condition, and after subsequent coating with a Gd{sub 2}Zr{sub 2}O{sub 7} buffer layer was investigated taking grain boundaries into account. It was observed that the initial mean surface roughness decreased after annealing except after very fine polishing. Additionally, the roughness of the buffer layers were found to increase slightly for the fine polished substrates. Grain boundary grooving was observed to impose a lower limit for the mean surface roughness. Fractions of cube texture within deviations of 5 deg. from the ideal cube orientation, in the annealed substrates, were found to be very sensitive to the surface roughness before annealing. Microstructure, texture and topography were studied in a strongly cube-textured Ni-5at.%W substrate before and after an additional annealing (condition A1 and A2, respectively) simulating a buffer layer crystallisation heat treatment. Condition A1 was characterised by a high fraction of cube texture, a high fraction of low angle grain boundaries and a low fraction of {Sigma}3 boundaries. A strong correlation was observed between the grain boundary groove depth and boundary type. Coherent twin boundaries and low angle grain boundaries were characterised by the smallest average groove depth while significantly deeper grooves were observed at other boundary types. A similar correlation was observed between the inclination angle at groove walls and the boundary type. The microstructure was slightly coarser in condition A2 and it was accompanied by a cube

  1. Formation of conductive spontaneous via holes in AlN buffer layer on n+Si substrate by filling the vias with n-AlGaN by metal organic chemical vapor deposition and application to vertical deep ultraviolet photo-sensor

    Directory of Open Access Journals (Sweden)

    N. Kurose

    2014-12-01

    Full Text Available We have grown conductive aluminum nitride (AlN layers using the spontaneous via holes formation technique on an n+-Si substrate for vertical-type device fabrication. The size and density of the via holes are controlled through the crystal growth conditions used for the layer, and this enables the conductance of the layer to be controlled. Using this technique, we demonstrate the fabrication of a vertical-type deep ultraviolet (DUV photo-sensor. This technique opens up the possibility of fabrication of monolithically integrated on-chip DUV sensors and DUV light-emitting devices (LEDs, including amplifiers, controllers and other necessary functional circuits, on a Si substrate.

  2. Assessment of Automotive Coatings Used on Different Metallic Substrates

    Directory of Open Access Journals (Sweden)

    W. Bensalah

    2014-01-01

    Full Text Available Four epoxy primers commonly used in the automotive industry were applied by gravity pneumatic spray gun over metallic substrates, specifically, steel, electrogalvanized steel, hot-dip galvanized steel, and aluminum. A two-component polyurethane resin was used as topcoat. To evaluate the performance of the different coating systems, the treated panels were submitted to mechanical testing using Persoz hardness, impact resistance, cupping, lattice method, and bending. Tribological properties of different coating systems were conducted using pin on disc machine. Immersion tests were carried out in 5% NaCl and immersion tests in 3% NaOH solutions. Results showed which of the coating systems is more suitable for each substrate in terms of mechanical, tribological, and anticorrosive performance.

  3. Crystal structure and polarization hysteresis properties of ferroelectric BaTiO3 thin-film capacitors on (Ba,Sr)TiO3-buffered substrates

    Science.gov (United States)

    Maki, Hisashi; Noguchi, Yuji; Kutsuna, Kazutoshi; Matsuo, Hiroki; Kitanaka, Yuuki; Miyayama, Masaru

    2016-10-01

    Ferroelectric BaTiO3 (BT) thin-film capacitors with a buffer layer of (Ba1- x Sr x )TiO3 (BST) have been fabricated on (001) SrTiO3 (STO) single-crystal substrates by a pulsed laser deposition method, and the crystal structure and polarization hysteresis properties have been investigated. X-ray diffraction reciprocal space mapping shows that the BST buffer effectively reduces the misfit strain relaxation of the BT films on SrRuO3 (SRO) electrodes. The BT capacitor with the SRO electrodes on the BST (x = 0.3) buffer exhibits a well-saturated hysteresis loop with a remanent polarization of 29 µC/cm2. The hysteresis loop displays a shift toward a specific field direction, which is suggested to stem from the flexoelectric coupling between the out-of-plane polarization and the strain gradient adjacent to the bottom interface.

  4. Compatibility of the selective area growth of GaN nanowires on AlN-buffered Si substrates with the operation of light emitting diodes

    International Nuclear Information System (INIS)

    AlN layers with thicknesses between 2 and 14 nm were grown on Si(111) substrates by molecular beam epitaxy. The effect of the AlN layer thickness on the morphology and nucleation time of spontaneously formed GaN nanowires (NWs) was investigated by scanning electron microscopy and line-of-sight quadrupole mass spectrometry, respectively. We observed that the alignment of the NWs grown on these layers improves with increasing layer thickness while their nucleation time decreases. Our results show that 4 nm is the smallest thickness of the AlN layer that allows the growth of well-aligned NWs with short nucleation time. Such an AlN buffer layer was successfully employed, together with a patterned SiOx mask, for the selective-area growth (SAG) of vertical GaN NWs. In addition, we fabricated light-emitting diodes (LEDs) from NW ensembles that were grown by means of self-organization phenomena on bare and on AlN-buffered Si substrates. A careful characterization of the optoelectronic properties of the two devices showed that the performance of NW-LEDs on bare and AlN-buffered Si is similar. Electrical conduction across the AlN buffer is facilitated by a high number of grain boundaries that were revealed by transmission electron microscopy. These results demonstrate that grainy AlN buffer layers on Si are compatible both with the SAG of GaN NWs and LED operation. Therefore, this study is a first step towards the fabrication of LEDs on Si substrates based on homogeneous NW ensembles. (paper)

  5. Effect of Ga2O3 buffer layer thickness on the properties of Cu/ITO thin films deposited on flexible substrates

    International Nuclear Information System (INIS)

    Cu and Cu/ITO films were prepared on polyethylene terephthalate (PET) substrates with a Ga2O3 buffer layer using radio frequency (RF) and direct current (DC) magnetron sputtering. The effect of Cu layer thickness on the optical and electrical properties of the Cu film deposited on a PET substrate with a Ga2O3 buffer layer was studied, and an appropriate Cu layer thickness of 4.2 nm was obtained. Changes in the optoelectrical properties of Cu(4.2 nm)/ITO(30 nm) films were investigated with respect to the Ga2O3 buffer layer thickness. The optical and electrical properties of the Cu/ITO films were significantly influenced by the thickness of the Ga2O3 buffer layer. A maximum transmission of 86%, sheet resistance of 45 Ω/□ and figure of merit of 3.96 × 10−3 Ω−1 were achieved for Cu(4.2 nm)/ITO(30 nm) films with a Ga2O3 layer thickness of 15 nm. (semiconductor materials)

  6. Growth of Epitaxial gamma-Al2O3 Films on Rigid Single-Crystal Ceramic Substrates and Flexible, Single-Crystal-Like Metallic Substrates by Pulsed Laser Deposition

    Energy Technology Data Exchange (ETDEWEB)

    Shin, Junsoo [ORNL; Goyal, Amit [ORNL; Wee, Sung Hun [ORNL

    2009-01-01

    Epitaxial -Al2O3 thin films were grown on diverse substrates using pulsed laser deposition. The high quality of epitaxial growth and cubic structure of -Al2O3 films was confirmed by x-ray diffraction. SrTiO3 and MgO single crystal substrates were used to optimize the growth conditions for epitaxial -Al2O3 film. Under the optimized conditions, epitaxial -Al2O3 thin films were grown on flexible, single-crystal-like, metallic templates. These included untextured Hastelloy substrates with a biaxially textured MgO layer deposited using ion-beam-assisted-deposition and biaxially textured Ni-W metallic tapes with epitaxially grown and a biaxially textured, MgO buffer layer. These biaxially textured, -Al2O3 films on flexible, single-crystal-like substrates are promising for subsequent epitaxial growth of various complex oxide films used for electrical, magnetic and electronic device applications.

  7. Improved breakdown voltage of AlGaN/GaN HEMTs grown on Si substrates using partially Mg-doped GaN buffer layer by MOCVD

    Institute of Scientific and Technical Information of China (English)

    LAU; KeiMay

    2010-01-01

    AlGaN/GaN high electron mobility transistors(HEMTs) were grown on Si substrates by MOCVD.In the HEMT structure,a 1 μm GaN buffer layer was partially doped with Mg in an attempt to increase the resistivity and minimize the buffer leakage.The AlGaN/GaN HEMTs grown on undoped and partially Mg-doped GaN buffer layers were processed and the DC characteristics of the devices were characterized for comparing the effect of Mg doping.For the device with the partially Mg-doped GaN buffer layer,a lower drain leakage current density of 55.8 nA/mm,a lower gate leakage current density of 2.73 μA/mm,and a higher off-state breakdown voltage of 104 V were achieved with device dimensions Lg/Wg/Lgs/Lgd=1/10/1/1 μm,better than the device with the undoped GaN buffer layer,which has a higher drain leakage current density of 9.2 μA/mm,a higher gate leakage current density of 91.8 μA/mm,and a lower off-state breakdown voltage of 87 V with the same device dimensions.

  8. The growth of AgGaTe2 layers on glass substrates with Ag2Te buffer layer by closed space sublimation method

    International Nuclear Information System (INIS)

    The AgGaTe2 layer growth was performed by the closed space sublimation method on the Mo/glass substrate. The Ag2Te buffer layer was inserted between AgGaTe2 and Mo layers, to improve the quality of grown layers. Crystallographic properties were analyzed by x-ray diffraction (XRD), and the surface morphologies were analyzed by scanning electron microscopy (SEM). The Ag2Te layer grown on the Mo/glass exhibited a membrane filter structure from the SEM observation. XRD spectra of layers grown with and without the buffer layer were compared. The AgGaTe2 layer with the Ag2Te buffer layer exhibited peaks originating from AgGaTe2, and a very strong diffraction peak of 112 was observed. On the other hand, it was cleared that the layer grown without the buffer layer exhibited no strong peaks associated with AgGaTe2, but Ga-Te compounds. From this, crystallographic properties of the AgGaTe2 layer were drastically improved by the insertion of the Ag2Te buffer layer. Moreover, the surface morphology exhibited a smooth surface when the Ag2Te buffer layer was inserted. The nucleation site density of AgGaTe2 was probably increased since the membrane filter structure exhibited numbers of kinks at the edge. Chemical reaction between Ga and Mo was also eliminated. It was cleared that the insertion of the buffer layer and its surface morphology were an important parameter to grow high quality AgGaTe2 layers. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  9. The growth of AgGaTe{sub 2} layers on glass substrates with Ag{sub 2}Te buffer layer by closed space sublimation method

    Energy Technology Data Exchange (ETDEWEB)

    Uruno, Aya; Usui, Ayaka; Takeda, Yuji; Inoue, Tomohiro [Department of Electrical Engineering and Bioscience, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555 (Japan); Kobayashi, Masakazu [Department of Electrical Engineering and Bioscience, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555 (Japan); Kagami Memorial Research Institute for Materials Science and Technology, Waseda University, 2-8-26 Nishiwaseda, Shinjuku, Tokyo 169-0051 (Japan)

    2015-06-15

    The AgGaTe{sub 2} layer growth was performed by the closed space sublimation method on the Mo/glass substrate. The Ag{sub 2}Te buffer layer was inserted between AgGaTe{sub 2} and Mo layers, to improve the quality of grown layers. Crystallographic properties were analyzed by x-ray diffraction (XRD), and the surface morphologies were analyzed by scanning electron microscopy (SEM). The Ag{sub 2}Te layer grown on the Mo/glass exhibited a membrane filter structure from the SEM observation. XRD spectra of layers grown with and without the buffer layer were compared. The AgGaTe{sub 2} layer with the Ag{sub 2}Te buffer layer exhibited peaks originating from AgGaTe{sub 2}, and a very strong diffraction peak of 112 was observed. On the other hand, it was cleared that the layer grown without the buffer layer exhibited no strong peaks associated with AgGaTe{sub 2}, but Ga-Te compounds. From this, crystallographic properties of the AgGaTe{sub 2} layer were drastically improved by the insertion of the Ag{sub 2}Te buffer layer. Moreover, the surface morphology exhibited a smooth surface when the Ag{sub 2}Te buffer layer was inserted. The nucleation site density of AgGaTe{sub 2} was probably increased since the membrane filter structure exhibited numbers of kinks at the edge. Chemical reaction between Ga and Mo was also eliminated. It was cleared that the insertion of the buffer layer and its surface morphology were an important parameter to grow high quality AgGaTe{sub 2} layers. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  10. Buffer layers for REBCO films for use in superconducting devices

    Science.gov (United States)

    Goyal, Amit; Wee, Sung-Hun

    2014-06-10

    A superconducting article includes a substrate having a biaxially textured surface. A biaxially textured buffer layer, which can be a cap layer, is supported by the substrate. The buffer layer includes a double perovskite of the formula A.sub.2B'B''O.sub.6, where A is rare earth or alkaline earth metal and B' and B'' are different transition metal cations. A biaxially textured superconductor layer is deposited so as to be supported by the buffer layer. A method of making a superconducting article is also disclosed.

  11. Structural characterisation of BaTiO3 thin films deposited on SrRuO3/YSZ buffered silicon substrates and silicon microcantilevers

    OpenAIRE

    Colder, Héloïse; Domengès, B.; Jorel, Corentin; Marie, P.; Boisserie, M.; Guillon, Samuel; Nicu, Liviu; Galdi, Alice; Mechin, Laurence

    2014-01-01

    We report on the progress towards an all epitaxial oxide layer technology on silicon substrates for epitaxial piezoelectric microelectromechanical systems. (101)-oriented epitaxial tetragonal BaTiO3 (BTO) thin films were deposited at two different oxygen pressures, 5.10 2 mbar and 5.10 3 mbar, on SrRuO3/Yttria-stabilized zirconia (YSZ) buffered silicon substrates by pulsed laser deposition. The YSZ layer full (001) orientation allowed the further growth of a fully (110)-oriented conductive Sr...

  12. Preparation and mechanoluminescent properties of SrAl2O4:Eu film grown on silicon substrate using double buffer layers

    International Nuclear Information System (INIS)

    In this paper, we utilized double layer method to prepare SrAl2O4:Eu (SAOE) film on silicon substrate (400). The Al2O3 layer (about 200 nm) was used as a hetero-buffer layer to eliminate the large difference of crystal lattice and thermal mismatch between the SAOE and silicon substrate. Thin SAOE layer (about 600 nm) was grown on Al2O3 layer as homo-buffer layer to reduce internal stress during film growth process. On double buffer layers, continuous sputtering formed about 1.5 μm SAOE film. The resulting thick SAOE/Al2O3/Si film possessed both excellent photoluminescence (PL) and mechanoluminescence (ML) properties. The similarity of PL and ML spectra suggested that PL and ML both originated from same emitting center of Eu2+. The strong ML intensity showed that the as-prepared SAOE film can be regarded as an indicator to detect stress distribution of an object. The thermoluminescent (ThL) results indicated that a large amount of trapped electrons existing in the resulting film answered for the strong ML intensity. - Highlights: • Double-layer method used to prepare SrAl2O4:Eu film on silicon substrate (400). • SrAl2O4:Eu film with excellent photoluminescent and mechanoluminescent properties • The film can be used as an indicator to detect stress distribution of an object

  13. Metal oxide films on glass and steel substrates

    CERN Document Server

    Sohi, A M

    1987-01-01

    in the pH8 electrolyte supports the view that the rate limiting reduction reaction is possibly oxygen (or water) reduction although some contribution from an organic 'impurity' cannot be ruled out. Coatings of Fe sub 3 O sub 4 on mild steel have been prepared by CVD using pneumatic spraying techniques and the corrosion behaviour of coated electrodes in organic-phosphate electrolyte (pH8) has been examined. A variety of thin (10-1000nm) metal oxide films have been deposited on flat glass substrates by the pyrolysis of an aerosol of metal acetylacetonates in a suitable carrier. The optical characteristics and thickness of the films have been measured and particular interest has centered on the use of a novel pin on disc apparatus to measure the physical durability of such thin films. Characteristic friction/penetration force traces have been established for 1st Series transition metal oxide films and some ranking in terms of 'hardness' established. The use of SnO sub 2 - coated glass for electrodes in a light m...

  14. Effect of substrate temperatures on evaporated In2S3 thin film buffer layers for Cu(In,Ga)Se2 solar cells

    International Nuclear Information System (INIS)

    For the realization of vacuum in-line process in the fabrication of Cu(In,Ga)Se2 (CIGS) solar cells, In2S3 thin film buffer layers for CIGS have been deposited on glasses and CIGS layers with a thickness of about 650 Å by thermal evaporation process. During the thermal evaporation, the temperature of the substrate was varied from room temperature to 500 °C by heating and the grown In2S3 films were investigated and analyzed in terms of the optimized buffer layer for CIGS solar cells. From the results of scanning electron microscope and X-ray diffraction, the In2S3 thin film deposited at a higher substrate temperature showed the larger grain size and the films have amorphous structural characteristics. Although the structural characteristics such as the atomic ratio of In to S and transmittance of the In2S3 thin films were not proportional to temperature, it was possible to obtain the large optical band gap of In2S3 films of about 3.8–3.9 eV enough to be used as the buffer layer of CIGS. - Highlights: • In2S3 films were deposited at various substrate temperatures by thermal evaporation. • The atomic ratio of In to S in the In2S3 film has the highest value at 300 °C. • The In2S3 film has a band gap of about 3.8 eV because of its amorphous structure. • The In2S3 film is expected to be used as a buffer layer by in-line vacuum process

  15. Improved high temperature integration of Al2O3 on MoS2 by using a metal oxide buffer layer

    International Nuclear Information System (INIS)

    We deposited a metal oxide buffer layer before atomic layer deposition (ALD) of Al2O3 onto exfoliated molybdenum disulfide (MoS2) in order to accomplish enhanced integration. We demonstrate that even at a high temperature, functionalization of MoS2 by means of a metal oxide buffer layer can effectively provide nucleation sites for ALD precursors, enabling much better surface coverage of Al2O3. It is shown that using a metal oxide buffer layer not only allows high temperature ALD process, resulting in highly improved quality of Al2O3/MoS2 interface, but also leaves MoS2 intact

  16. Fabrication of YBCO Coated Conductors on Biaxial Textured Metal Substrate by All-Sputtering

    Institute of Scientific and Technical Information of China (English)

    Xiao Han; Jing-Tan He; Jie Xiong; Bo-Wan Tao

    2008-01-01

    CeO2/YSZ/CeO2 buffer layers were prepared on biaxial textured Ni-5at.%W substrate by direct-current magnetron reactive sputtering with the optimum process. YBCO thin films were deposited on CeO2/YSZ/CeO2 buffered Ni-5at.%W substrate at temperature ranging from 500°C to 700°C by diode dc sputtering. By optimizing substrate temperature, pure c-axis oriented YBCO films were obtained. The microstructures of CeO2/YSZ/CeO2 buffer layers were characterized by X-ray diffraction. A smooth, dense and crack-free surface morphology was observed with scanning electron microscopy. The critical current density Jc about 0.75 MA/cm2 at 77 K was obtained.

  17. Fabrication of a strain-induced high performance NbN ultrathin film by a Nb5N6 buffer layer on Si substrate

    International Nuclear Information System (INIS)

    Lattice mismatch between NbN and silicon (Si) reduces the superconducting properties of NbN film on Si substrate, and this in turn affects the performance of devices such as the hot electron bolometer (HEB) and superconducting nanowire single photon detector (SNSPD). We have found that the superconducting properties of NbN film on Si will be significantly improved by a Nb5N6 buffer layer. The strain of the NbN film was optimized by varying the thickness of the buffer layer. With 30  nm thick Nb5N6, the zero resistance superconducting transition temperature (TC0) of a 6 nm thick NbN film on Si is up to 13.5 K and the critical current density (JC) of the film is more than 107 A cm−2. All the details of preparation, improvement and characteristics of this film are also presented. (paper)

  18. In vitro tensile strength of luting cements on metallic substrate.

    Science.gov (United States)

    Orsi, Iara A; Varoli, Fernando K; Pieroni, Carlos H P; Ferreira, Marly C C G; Borie, Eduardo

    2014-01-01

    The aim of this study was to determine the tensile strength of crowns cemented on metallic substrate with four different types of luting agents. Twenty human maxillary molars with similar diameters were selected and prepared to receive metallic core castings (Cu-Al). After cementation and preparation the cores were measured and the area of crown's portion was calculated. The teeth were divided into four groups based on the luting agent used to cement the crowns: zinc phosphate cement; glass ionomer cement; resin cement Rely X; and resin cement Panavia F. The teeth with the crowns cemented were subjected to thermocycling and later to the tensile strength test using universal testing machine with a load cell of 200 kgf and a crosshead speed of 0.5 mm/min. The load required to dislodge the crowns was recorded and converted to MPa/mm(2). Data were subjected to Kruskal-Wallis analysis with a significance level of 1%. Panavia F showed significantly higher retention in core casts (3.067 MPa/mm(2)), when compared with the other cements. Rely X showed a mean retention value of 1.877 MPa/mm(2) and the zinc phosphate cement with 1.155 MPa/mm(2). Glass ionomer cement (0.884 MPa/mm(2)) exhibited the lowest tensile strength value. Crowns cemented with Panavia F on cast metallic posts and cores presented higher tensile strength. The glass ionomer cement showed the lowest tensile strength among all the cements studied. PMID:25140718

  19. Metal oxide films on glass and steel substrates

    International Nuclear Information System (INIS)

    A variety of thin (10-1000nm) metal oxide films have been deposited on flat glass substrates by the pyrolysis of an aerosol of metal acetylacetonates in a suitable carrier. The optical characteristics and thickness of the films have been measured and particular interest has centered on the use of a novel pin on disc apparatus to measure the physical durability of such thin films. Characteristic friction/penetration force traces have been established for 1st Series transition metal oxide films and some ranking in terms of 'hardness' established. The use of SnO2 - coated glass for electrodes in a light modulator cell has been examined. The electrochromic behaviour of a silver matrix in DMSO electrolyte has been observed in a small glass cell and by cyclic voltammetry on a vitreous carbon electrode. Optimum conditions for practical light-shutter have been established and electrode processes elucidated. A corrosion study of mild steel in two different water/organic electrolytes of industrial importance has been carried out. Mechanisms to account for the corrosion observed have been presented. Support for the usual anodic reaction is presented Fe → Fe2+ + 2e but in the electrolyte operated at low pH film formation of a water soluble organic 'tar' has been confirmed and the proposed reaction Fe2+ + H2O → FeOH+ + H+ leads to a local increase in [H+] which accounts for the observed corrosion rate. In contrast, corrosion behaviour in the pH8 electrolyte supports the view that the rate limiting reduction reaction is possibly oxygen (or water) reduction although some contribution from an organic 'impurity' cannot be ruled out. Coatings of Fe3O4 on mild steel have been prepared by CVD using pneumatic spraying techniques and the corrosion behaviour of coated electrodes in organic-phosphate electrolyte (pH8) has been examined. (author)

  20. Oxidized Nano-Porous-Silicon Buffer Layers for Suppressing the Visible Photoresponsivity of ZnO Ultraviolet Photodetectors on Si Substrates

    Directory of Open Access Journals (Sweden)

    Kuen-Hsien Wu

    2014-01-01

    Full Text Available This paper demonstrated the fabrication and optoelectronic characteristics of ZnO ultraviolet (UV photodetectors fabricated on Si substrates with oxidized nano-porous-Si (ONPS buffer layers. ONPS layers were prepared on the surfaces of Si substrates by use of an electrochemical anodization technique following a rapid-thermal-oxidation process. Experimental results indicated that application of ONPS buffer layers not only improved the crystallinty of the deposited ZnO thin films but also greatly restricted the visible-to-infrared photoresponse that was generated from the light absorption of Si substrates. The developed ZnO-on-ONPS photodiodes achieved high photoresponsivity for the incident UV light of 300 ∼ 400 nm and got a large photo-to-dark current ratio up to 104 at wavelength of 375 nm under a bias of 5 V. Therefore, ZnO on ONPS provides a highly potential approach for the development of low-cost visible-blind UV photodetectors.

  1. The effect of metal-buffer bilayer drain/source electrodes on the operational stability of the organic field effect transistors

    International Nuclear Information System (INIS)

    In this paper, we have investigated experimentally the effect of different drain/source (D/S) electrodes and charge injection buffer layers on the electrical properties and operational stability of a stilbene organic field effect transistor (OFET). The results show that the organic buffer layer of copper phthalocyanine (CuPc) considerably improves the electrical properties of the transistors, but has a negligible effect on their temporal behavior. On the other hand, inorganic metal-oxide buffer layer of molybdenum oxide (MoO3) drastically changes both the electrical properties and operational stability. The functionalities of this metal-oxide tightly depend on the properties of the D/S metallic electrodes. OFETs with Al/MoO3 as the bilayer D/S electrodes have the best electrical properties: field effect mobility μeff = 0.32 cm2 V−1 s−1 and threshold voltage VTH = − 5 V and the transistors with Ag/MoO3 have the longest operational stability. It was concluded that the chemical stability of the metal/metal-oxide or metal/organic interfaces of the bilayer D/S electrodes determine the operational stability of the OFETs. - Highlights: • The effect of buffer layers on the performance of the stilbene OFETs has been investigated. • Inorganic buffer layer improved the electrical and temporal behaviors simultaneously. • Organic buffer layer only changes the electrical properties. • Chemical stability of the interfaces determines the operational stability of the transistor

  2. Charge movement in a GaN-based hetero-structure field effect transistor structure with carbon doped buffer under applied substrate bias

    Energy Technology Data Exchange (ETDEWEB)

    Pooth, Alexander, E-mail: a.pooth@bristol.ac.uk [Center for Device Thermography and Reliability, H.H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL (United Kingdom); IQE (Europe) Ltd., Pascal Close, St. Mellons, Cardiff CF3 0LW (United Kingdom); Uren, Michael J.; Cäsar, Markus; Kuball, Martin [Center for Device Thermography and Reliability, H.H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL (United Kingdom); Martin, Trevor [IQE (Europe) Ltd., Pascal Close, St. Mellons, Cardiff CF3 0LW (United Kingdom)

    2015-12-07

    Charge trapping and transport in the carbon doped GaN buffer of a GaN-based hetero-structure field effect transistor (HFET) has been investigated under both positive and negative substrate bias. Clear evidence of redistribution of charges in the carbon doped region by thermally generated holes is seen, with electron injection and capture observed during positive bias. Excellent agreement is found with simulations. It is shown that these effects are intrinsic to the carbon doped GaN and need to be controlled to provide reliable and efficient GaN-based power HFETs.

  3. Adlayer Core-Level Shifts of Random Metal Overlayers on Transition-Metal Substrates

    DEFF Research Database (Denmark)

    Ganduglia-Pirovano, M. V.; Kudrnovský, J.; Scheffler, M.

    1997-01-01

    We calculate the difference of the ionization energies of a core electron of a surface alloy, i.e., a B atom in a A(1-x)B(x) overlayer on a fee B(001) substrate, and a core electron of the clean fee B(001) surface using density-functional theory. We analyze the initial-state contributions and the...... the initial-state trends are explained in terms of the change of inter- and intra-atomic screening upon alloying. A possible role of alloying on the chemical reactivity of metal surfaces is discussed....... and the screening effects induced by the core hole, and study the influence of the alloy composition for a number of noble metal-transition metal systems. Our analysis clearly indicates the importance of final-state screening effects for the interpretation of measured core-level shifts. Calculated deviations from...

  4. Aspartate buffer and divalent metal ions affect oxytocin in aqueous solution and protect it from degradation

    NARCIS (Netherlands)

    Avanti, Christina; Oktaviani, Nur Alia; Hinrichs, Wouter L J; Frijlink, Henderik W; Mulder, Frans A A

    2013-01-01

    Oxytocin is a peptide drug used to induce labor and prevent bleeding after childbirth. Due to its instability, transport and storage of oxytocin formulations under tropical conditions is problematic. In a previous study, we have found that the stability of oxytocin in aspartate buffered formulation

  5. Carbon nanofiber layers on metal and carbon substrates : PEM fuel cell and microreactor applications

    NARCIS (Netherlands)

    Pacheco Benito, Sergio

    2011-01-01

    This thesis describes the preparation of CNF layers on flat and porous substrates and their application as catalyst supports for chemical and electrochemical gas‐liquidsolid (G‐L‐S) catalytic reactions. Metal nanoparticles growing CNFs on flat metal substrates at 600°C are easily formed from NiO, in

  6. Silver metal colloidal film on a flexible polymer substrate

    Science.gov (United States)

    del Rocío Balaguera Gelves, Marcia; El Burai-Félix, Alia; De La Cruz-Montoya, Edwin; Jeréz Rozo, Jaqueline I.; Hernández-Rivera, Samuel P.

    2006-05-01

    A method to prepare metallic nanoparticles films in the presence of a hydrophilic copolymer with the aim of inhibiting the formation of clusters in the nanoparticles has been developed. Thin films prepared could be used in applications such as sensors development and substrates for surface-enhanced Raman spectroscopy. The synthesis of colloidal solutions of silver nanoparticles was achieved by the reduction AgNO 3 using sodium citrate with thermal treatment which results in a robust fabrication of gold and silver films. The polymeric films were prepared by polymerization 2-hydroxyethyl methacrylate with methacrylic acid (method 1). The other procedure employed (method 2) incorporated the use of polyvinyl pyrrolidone and polyethylene glycol as copolymers. A scanning electron microscope was used to provide microstructural information of coverage achieved. The ability to tune the nanocoating structure and spectral and electronic properties can be used for applications such as sensors used in the detection of explosives. Silver nanoparticles were also characterized by surface-enhanced Raman scattering (SERS), which integrates high chemical sensitivity with spectroscopic identification and has enormous potential for applications involving ultra-sensitive chemical detection. Spectra were obtained using a Renishaw RM2000 Raman Microspectrometer system operating in the visible region excitation (532 nm).

  7. Tuning molecule-substrate coupling via deposition of metal adatoms

    Science.gov (United States)

    Yang, Hung-Hsiang; Tsai, Hsu-Han; Ying, Chi-Feng; Yang, Tsung-Han; Kaun, Chao-Cheng; Chen, Chun-hsien; Lin, Minn-Tsong

    2015-11-01

    Organic-inorganic hybrids constitute an important class of functional materials. The fundamentals at the molecular levels are, however, relatively unexplored. PTCDA (perylene-3,4,9,10-tetracarboxylic dianhydride) is a colorant and extensively applied in organic-based optoelectronic devices. PTCDA/Cu(111) and Fe-PTCDA/Cu(111) metal-organic hybrid monolayers are studied by low temperature scanning tunneling microscopy and spectroscopy (STS) and density functional theory (DFT). The former exhibits Moiré pattern-modulated molecular density of states while the latter adapts a commensurate adlattice. Both imaging and spectroscopic results suggest a strong hybridization between PTCDA molecules and Cu(111) substrate. Weak PTCDA-Cu(111) coupling can be obtained by the introduction of Fe adatoms. Compared to PTCDA/Cu(111), STS spectra of Fe-PTCDA/Cu(111) exhibit a higher energy and sharper features of the frontier orbitals. Together with the DFT results, we found that the PTCDA-Cu(111) coupling is attenuated by the presence of Fe adatoms and Fe-PTCDA coordination.

  8. Increased upper critical field for nanocrystalline MoN thin films deposited on AlN buffered substrates at ambient temperature

    Science.gov (United States)

    Baskaran, R.; Thanikai Arasu, A. V.; Amaladass, E. P.; Vaidhyanathan, L. S.; Baisnab, D. K.

    2016-05-01

    Molybdenum nitride (MoN) thin films have been deposited using reactive DC magnetron sputtering on aluminum nitride buffered oxidized silicon substrates at ambient temperature. GIXRD of aluminum nitride (AlN) deposited under similar conditions has revealed the formation of wurtzite phase AlN. GIXRD characterization of molybdenum thin films deposited on AlN buffered oxidized silicon substrates has indicated the formation of nanocrystalline MoN thin films. The electrical resistivity measurements indicate MoN thin films have a superconducting transition temperature of ~8 K. The minimum transition width of the MoN thin film is 0.05 K at 0 T. The inferred upper critical field B c2(0) for these nanocrystalline MoN thin films obtained by fitting the temperature dependence of critical field with Werthamer, Helfand and Hohenberg theory lies in the range of 17-18 T which is the highest reported in literature for MoN thin films.

  9. Heteroepitaxial Cu2O thin film solar cell on metallic substrates

    OpenAIRE

    Sung Hun Wee; Po-Shun Huang; Jung-Kun Lee; Amit Goyal

    2015-01-01

    Heteroepitaxial, single-crystal-like Cu2O films on inexpensive, flexible, metallic substrates can potentially be used as absorber layers for fabrication of low-cost, high-performance, non-toxic, earth-abundant solar cells. Here, we report epitaxial growth of Cu2O films on low cost, flexible, textured metallic substrates. Cu2O films were deposited on the metallic templates via pulsed laser deposition under various processing conditions to study the influence of processing parameters on the str...

  10. Pulse based sensor networking using mechanical waves through metal substrates

    Science.gov (United States)

    Lorenz, S.; Dong, B.; Huo, Q.; Tomlinson, W. J.; Biswas, S.

    2013-05-01

    This paper presents a novel wireless sensor networking technique using ultrasonic signal as the carrier wave for binary data exchange. Using the properties of lamb wave propagation through metal substrates, the proposed network structure can be used for runtime transport of structural fault information to ultrasound access points. Primary applications of the proposed sensor networking technique will include conveying fault information on an aircraft wing or on a bridge to an ultrasonic access point using ultrasonic wave through the structure itself (i.e. wing or bridge). Once a fault event has been detected, a mechanical pulse is forwarded to the access node using shortest path multi-hop ultrasonic pulse routing. The advantages of mechanical waves over traditional radio transmission using pulses are the following: First, unlike radio frequency, surface acoustic waves are not detectable outside the medium, which increases the inherent security for sensitive environments in respect to tapping. Second, event detection can be represented by the injection of a single mechanical pulse at a specific temporal position, whereas radio messages usually take several bits. The contributions of this paper are: 1) Development of a transceiver for transmitting/receiving ultrasound pulses with a pulse loss rate below 2·10-5 and false positive rate with an upper bound of 2·10-4. 2) A novel one-hop distance estimation based on the properties of lamb wave propagation with an accuracy of above 80%. 3) Implementation of a wireless sensor network using mechanical wave propagation for event detection on a 2024 aluminum alloy commonly used for aircraft skin construction.

  11. Through-substrate via and redistribution layer with metal paste

    NARCIS (Netherlands)

    Roozeboom, F.; Grunsven, E.C.E. van; Sanders, F.H.M.; Burghoorn, M.M.A.

    2013-01-01

    A semiconductor device and a method for manufacturing such semiconductor device for use in a stacked configuration of the semiconductor device are disclosed. The semiconductor device includes a substrate including at least part of an electronic circuit provided at a first side thereof. The substrate

  12. Electrical properties of n-type GaSb substrates and p-type GaSb buffer layers for InAs/InGaSb superlattice infrared detectors

    Energy Technology Data Exchange (ETDEWEB)

    Mitchel, W. C., E-mail: William.Mitchel.1@us.af.mil; Haugan, H. J.; Mou, Shin; Brown, G. J. [Air Force Research Laboratory, Materials & Manufacturing Directorate, Wright-Patterson Air Force Base, Ohio 45433 (United States); Elhamri, S.; Berney, R. [University of Dayton, Department of Physics, Dayton, Ohio 45469 (United States)

    2015-09-15

    Lightly doped n-type GaSb substrates with p-type GaSb buffer layers are the preferred templates for growth of InAs/InGaSb superlattices used in infrared detector applications because of relatively high infrared transmission and a close lattice match to the superlattices. We report here temperature dependent resistivity and Hall effect measurements of bare substrates and substrate-p-type buffer layer structures grown by molecular beam epitaxy. Multicarrier analysis of the resistivity and Hall coefficient data demonstrate that high temperature transport in the substrates is due to conduction in both the high mobility zone center Γ band and the low mobility off-center L band. High overall mobility values indicate the absence of close compensation and that improved infrared and transport properties were achieved by a reduction in intrinsic acceptor concentration. Standard transport measurements of the undoped buffer layers show p-type conduction up to 300 K indicating electrical isolation of the buffer layer from the lightly n-type GaSb substrate. However, the highest temperature data indicate the early stages of the expected p to n type conversion which leads to apparent anomalously high carrier concentrations and lower than expected mobilities. Data at 77 K indicate very high quality buffer layers.

  13. Electrical properties of n-type GaSb substrates and p-type GaSb buffer layers for InAs/InGaSb superlattice infrared detectors

    Directory of Open Access Journals (Sweden)

    W. C. Mitchel

    2015-09-01

    Full Text Available Lightly doped n-type GaSb substrates with p-type GaSb buffer layers are the preferred templates for growth of InAs/InGaSb superlattices used in infrared detector applications because of relatively high infrared transmission and a close lattice match to the superlattices. We report here temperature dependent resistivity and Hall effect measurements of bare substrates and substrate-p-type buffer layer structures grown by molecular beam epitaxy. Multicarrier analysis of the resistivity and Hall coefficient data demonstrate that high temperature transport in the substrates is due to conduction in both the high mobility zone center Γ band and the low mobility off-center L band. High overall mobility values indicate the absence of close compensation and that improved infrared and transport properties were achieved by a reduction in intrinsic acceptor concentration. Standard transport measurements of the undoped buffer layers show p-type conduction up to 300 K indicating electrical isolation of the buffer layer from the lightly n-type GaSb substrate. However, the highest temperature data indicate the early stages of the expected p to n type conversion which leads to apparent anomalously high carrier concentrations and lower than expected mobilities. Data at 77 K indicate very high quality buffer layers.

  14. Electrical properties of n-type GaSb substrates and p-type GaSb buffer layers for InAs/InGaSb superlattice infrared detectors

    International Nuclear Information System (INIS)

    Lightly doped n-type GaSb substrates with p-type GaSb buffer layers are the preferred templates for growth of InAs/InGaSb superlattices used in infrared detector applications because of relatively high infrared transmission and a close lattice match to the superlattices. We report here temperature dependent resistivity and Hall effect measurements of bare substrates and substrate-p-type buffer layer structures grown by molecular beam epitaxy. Multicarrier analysis of the resistivity and Hall coefficient data demonstrate that high temperature transport in the substrates is due to conduction in both the high mobility zone center Γ band and the low mobility off-center L band. High overall mobility values indicate the absence of close compensation and that improved infrared and transport properties were achieved by a reduction in intrinsic acceptor concentration. Standard transport measurements of the undoped buffer layers show p-type conduction up to 300 K indicating electrical isolation of the buffer layer from the lightly n-type GaSb substrate. However, the highest temperature data indicate the early stages of the expected p to n type conversion which leads to apparent anomalously high carrier concentrations and lower than expected mobilities. Data at 77 K indicate very high quality buffer layers

  15. Oxygen Intercalation of Graphene on Transition Metal Substrate: An Edge-Limited Mechanism.

    Science.gov (United States)

    Ma, Liang; Zeng, Xiao Cheng; Wang, Jinlan

    2015-10-15

    Oxygen intercalation has been proven to be an efficient experimental approach to decouple chemical vapor deposition grown graphene from metal substrate with mild damage, thereby enabling graphene transfer. However, the mechanism of oxygen intercalation and associated rate-limiting step are still unclear on the molecular level. Here, by using density functional theory, we evaluate the thermodynamics stability of graphene edge on transition metal surface in the context of oxygen and explore various reaction pathways and energy barriers, from which we can identify the key steps as well as the roles of metal passivated graphene edges during the oxygen intercalation. Our calculations suggest that in well-controlled experimental conditions, oxygen atoms can be easily intercalated through either zigzag or armchair graphene edges on metal surface, whereas the unwanted graphene oxidation etching can be suppressed. Oxygen intercalation is, thus, an efficient and low-damage way to decouple graphene from a metal substrate while it allows reusing metal substrate for graphene growth.

  16. Lattice pulling effect and strain relaxation in axial (In,Ga)N/GaN nanowire heterostructures grown on GaN-buffered Si(111) substrate

    Energy Technology Data Exchange (ETDEWEB)

    Kong, X.; Trampert, A. [Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117, Berlin (Germany); Albert, S.; Bengoechea-Encabo, A.; Sanchez-Garcia, M.A.; Calleja, E. [Dpto. Ingenieria Electronica, ETSI Telecomunicacion, Universidad Politecnica, Ciudad Universitaria, 28040, Madrid (Spain)

    2015-04-01

    Transmission electron microscopy and spatially resolved electron energy-loss spectroscopy have been applied to investigate the indium distribution and the interface morphology in axial (In,Ga)N/GaN nanowire heterostructures. The ordered axial (In,Ga)N/GaN nanowire heterostructures with an indium concentration up to 80% are grown by molecular beam epitaxy on GaN-buffered Si(111) substrates. We observed a pronounced lattice pulling effect in all the nanowire samples given in a broad transition region at the interface. The lattice pulling effect becomes smaller and the (In,Ga)N/GaN interface width is reduced as the indium concentration is increased in the (In,Ga)N section. The result can be interpreted in terms of the increased plastic strain relaxation via the generation of the misfit dislocations at the interface. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  17. Influence of the Substrate on the Formation of Metallic Glass Coatings by Cold Gas Spraying

    Science.gov (United States)

    Henao, John; Concustell, Amadeu; Dosta, Sergi; Cinca, Núria; Cano, Irene G.; Guilemany, Josep M.

    2016-06-01

    Cold gas spray technology has been used to build up coatings of Fe-base metallic glass onto different metallic substrates. In this work, the effect of the substrate properties on the viscoplastic response of metallic glass particles during their impact has been studied. Thick coatings with high deposition efficiencies have been built-up in conditions of homogeneous flow on substrates such as Mild Steel AISI 1040, Stainless Steel 316L, Inconel 625, Aluminum 7075-T6, and Copper (99.9%). Properties of the substrate have been identified to play an important role in the viscoplastic response of the metallic glass particles at impact. Depending on the process gas conditions, the impact morphologies show not only inhomogeneous deformation but also homogeneous plastic flow despite the high strain rates, 108 to 109 s-1, involved in the technique. Interestingly, homogenous deformation of metallic glass particles is promoted depending on the hardness and the thermal diffusivity of the substrate and it is not exclusively a function of the kinetic energy and the temperature of the particle at impact. Coating formation is discussed in terms of fundamentals of dynamics of undercooled liquids, viscoplastic flow mechanisms of metallic glasses, and substrate properties. The findings presented in this work have been used to build up a detailed scheme of the deposition mechanism of metallic glass coatings by the cold gas spraying technology.

  18. Electrical and piezoelectric properties of BiFeO3 thin films grown on SrxCa1−xRuO3-buffered SrTiO3 substrates

    KAUST Repository

    Yao, Yingbang

    2012-06-01

    (001)-oriented BiFeO 3 (BFO) thin films were grown on Sr xCa 1-xRuO 3- (SCRO; x = 1, 0.67, 0.33, 0) buffered SrTiO 3 (001) substrates using pulsed laser deposition. The microstructural, electrical, ferroelectric, and piezoelectric properties of the thin films were considerably affected by the buffer layers. The interface between the BFO films and the SCRO-buffer layer was found to play a dominant role in determining the electrical and piezoelectric behaviors of the films. We found that films grown on SrRuO 3-buffer layers exhibited minimal electrical leakage while films grown on Sr 0.33Ca 0.67RuO 3-buffer layers had the largest piezoelectric response. The origin of this difference is discussed. © 2012 American Institute of Physics.

  19. Textured tape substrates from binary copper alloys with vanadium and yttrium for the epitaxial deposition of buffer and superconducting layers

    Science.gov (United States)

    Khlebnikova, Yu. V.; Rodionov, D. P.; Egorova, L. Yu.; Suaridze, T. R.

    2016-05-01

    The structure of tapes of binary Cu-0.6 wt % V and Cu-1 wt % Y alloys and texturing process of them in the course of cold deformation by rolling to 99% and subsequent recrystallizing annealing have been studied. The possibility of achieving the perfect cube texture in thin tapes made from binary copper-based alloys with vanadium and yttrium additions has in principle been shown. This opens the prospect of using them as substrates when manufacturing tapes of second-generation high-temperature superconductors. Optimum annealing conditions for the studied alloys have been determined, which have made it possible to produce the perfect biaxial texture with a content of cube {001} ± 10° grains on the surfaces of textured tapes of more than 95%.

  20. Physical masking process for integrating micro metallic structures on polymer substrate

    DEFF Research Database (Denmark)

    Islam, Mohammad Aminul; Hansen, Hans Nørgaard

    2009-01-01

    plasmon devices need micro metallic structures on a polymer substrate with an uniform metal layer thickness in the nanometer range. A well known fabrication process to achieve such metallic surface pattern on polymer substrate is photolithography which involves an expensive mask and toxic chemicals....... The current study shows a novel approach for fabricating thin micro metallic structures on polymer substrates using a simple physical mask and a PVD equipment. The new process involves fewer process steps, it is cost effective and suitable for high volume industrial production. Current study suggests......Integration of micro metallic structures in polymer devices is a broad multi-disciplinary research field, consisting of various combinations of mechanical, chemical and physical fabrication methods. Each of the methods has its specific advantages and disadvantages. Some applications like surface...

  1. Dynamic buckling behavior of thin metal film lines from substrate

    Science.gov (United States)

    Wu, Dan; Xie, Huimin; Wang, Heling; Zhang, Jie; Li, Chuanwei

    2014-10-01

    The dynamic buckling behavior of thin films from substrate is studied in this work. The experimental results show that the buckling morphology of the constantan film lines from the polymer substrate is inconsistent and non-sinusoidal, which is different from the sinusoidal form of the buckling morphology under static loads. The plastic deformation of the film lines results in the non-sinusoidal buckling morphology and residual deformation when unloaded. Finite element modeling results with regard to the plastic dissipation of the constantan film lines reveal that the plastic dissipation suppresses the buckling-driven delaminating under impact loads. This study will give some new perspectives on the buckling behavior of thin film from substrate.

  2. Structural characterisation of BaTiO3 thin films deposited on SrRuO3/YSZ buffered silicon substrates and silicon microcantilevers

    International Nuclear Information System (INIS)

    We report on the progress towards an all epitaxial oxide layer technology on silicon substrates for epitaxial piezoelectric microelectromechanical systems. (101)-oriented epitaxial tetragonal BaTiO3 (BTO) thin films were deposited at two different oxygen pressures, 5.10−2 mbar and 5.10−3 mbar, on SrRuO3/Yttria-stabilized zirconia (YSZ) buffered silicon substrates by pulsed laser deposition. The YSZ layer full (001) orientation allowed the further growth of a fully (110)-oriented conductive SrRuO3 electrode as shown by X-ray diffraction. The tetragonal structure of the BTO films, which is a prerequisite for the piezoelectric effect, was identified by Raman spectroscopy. In the BTO film deposited at 5.10−2 mbar strain was mostly localized inside the BTO grains whereas at 5.10−3 mbar, it was localized at the grain boundaries. The BTO/SRO/YSZ layers were finally deposited on Si microcantilevers at an O2 pressure of 5.10−3 mbar. The strain level was low enough to evaluate the BTO Young modulus. Transmission electron microscopy (TEM) was used to investigate the epitaxial quality of the layers and their epitaxial relationship on plain silicon wafers as well as on released microcantilevers, thanks to Focused-Ion-Beam TEM lamella preparation

  3. Structural characterisation of BaTiO{sub 3} thin films deposited on SrRuO{sub 3}/YSZ buffered silicon substrates and silicon microcantilevers

    Energy Technology Data Exchange (ETDEWEB)

    Colder, H.; Jorel, C., E-mail: corentin.jorel@unicaen.fr; Méchin, L. [GREYC, UMR 6072, CNRS, ENSICAEN, UCBN, 6 bd du Maréchal Juin, 14050 Caen Cedex (France); Domengès, B. [LAMIPS, CRISMAT-NXP Semiconductors-Presto Engineering laboratory, CNRS-UMR 6508, ENSICAEN, UCBN, 2 rue de la Girafe, 14 000 Caen (France); Marie, P.; Boisserie, M. [CIMAP, UMR 6252, CNRS, ENSICAEN, UCBN, CEA, 6 bd du Maréchal Juin, 14050 Caen Cedex (France); Guillon, S.; Nicu, L. [LAAS, CNRS, Univ de Toulouse, 7 avenue du Colonel Roche, 31400 Toulouse (France); Galdi, A. [GREYC, UMR 6072, CNRS, ENSICAEN, UCBN, 6 bd du Maréchal Juin, 14050 Caen Cedex (France); Department of Industrial Engineering, CNR-SPIN Salerno, Università di Salerno, 84084 Fisciano, Salerno (Italy)

    2014-02-07

    We report on the progress towards an all epitaxial oxide layer technology on silicon substrates for epitaxial piezoelectric microelectromechanical systems. (101)-oriented epitaxial tetragonal BaTiO{sub 3} (BTO) thin films were deposited at two different oxygen pressures, 5.10{sup −2} mbar and 5.10{sup −3} mbar, on SrRuO{sub 3}/Yttria-stabilized zirconia (YSZ) buffered silicon substrates by pulsed laser deposition. The YSZ layer full (001) orientation allowed the further growth of a fully (110)-oriented conductive SrRuO{sub 3} electrode as shown by X-ray diffraction. The tetragonal structure of the BTO films, which is a prerequisite for the piezoelectric effect, was identified by Raman spectroscopy. In the BTO film deposited at 5.10{sup −2} mbar strain was mostly localized inside the BTO grains whereas at 5.10{sup −3} mbar, it was localized at the grain boundaries. The BTO/SRO/YSZ layers were finally deposited on Si microcantilevers at an O{sub 2} pressure of 5.10{sup −3} mbar. The strain level was low enough to evaluate the BTO Young modulus. Transmission electron microscopy (TEM) was used to investigate the epitaxial quality of the layers and their epitaxial relationship on plain silicon wafers as well as on released microcantilevers, thanks to Focused-Ion-Beam TEM lamella preparation.

  4. Laser assisted removal of fixed contamination from metallic substrate

    International Nuclear Information System (INIS)

    A single mode pulsed fiber laser was used to remove fixed contamination from stainless steel substrate by ablation. Samples were simulated by electro-deposition technique with 232U as the test contaminant. Laser power, repetition rate, laser beam scanning speed and number of passes were optimised to obtain the desired ablation depth in the substrate. Ablation depth varying between few microns to few hundreds of microns could be achieved through careful control of these processing parameters. The absence of any activity in laser treated samples provided experimental signature of the efficacy of the laser assisted removal of fixed contamination. (author)

  5. Plasma-Spraying Ceramics Onto Smooth Metallic Substrates

    Science.gov (United States)

    Miller, Robert A.; Brindley, William J.; Rouge, Carl J.; Leissler, George

    1992-01-01

    In fabrication process, plasma-sprayed ceramic coats bonded strongly to smooth metallic surfaces. Principal use of such coats in protecting metal parts in hot-gas paths of advanced gas turbine engines. Process consists of application of initial thin layer of ceramic on smooth surface by low-pressure-plasma spraying followed by application of layer of conventional, low-thermal-conductivity atmospheric-pressure plasma-sprayed ceramic.

  6. Heavy metals in water bodies purified by suspended substrate of rivers

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    The equations, which are used to describe the relationships of adsorption quantity(s), adsorption percent(Pa),aqueous equilibrium concentration(c) of heavy metal on river suspended substrates and the ratio of adsorbent to water(j), are developed when heavy metal adsorption on river suspended substrate satisfies with linear adsorption equation. The results, according to the simulation from heavy metal adsorption on suspended substrates of several main Chinese rivers from a previous research report, indicated that these developed equations could describe the linear adsorption processes in practice very well, meanwhile, the adsorption equilibrium constant of adsorbent for heavy metal was an intensity factor regardless of ratio of suspended substrates to water but strongly depended on media's pH. Furthermore, the suspended substrates of Yellow River gave stronger purification ability for Pb than for Cd and Cu. When Cd was purified by different river suspended substrates, it exhibited that the order of their purification ability for Cd was that of Songhuajiang> Zhujiang>Yellow River, which was consistent with their contents of cation exchange capacity(CEC). In addition, we estimated and compared the purification ability of river suspended substrates for cadmium, and the resulting purification percent was 37.64%, 64.58% and 50.98% for Songhuajiang River, Yangtze River and Zhujiang River, respectively.

  7. Site-selective metallization of polymeric substrates by the hyperbranched polymer templates

    International Nuclear Information System (INIS)

    We demonstrate a simple, cost-effective and universal technique for the fabrication of copper circuit pattern on flexible polymeric substrate. This method relies on a ternary polyethylenimine-poly(acrylic acid)-substrate film incorporating palladium catalysts, which are used as adhesive interlayers for the copper metallization of flexible polymeric substrates. We demonstrated the fabrication of patterned copper films on a variety of flexible polymers with minimum feature sizes of 200 μm. And the resulting copper circuit showed strong adhesion with underlying flexible polymeric substrates. The films were characterized by ATR FT-IR, contact angle, XPS, XRD, TEM and SEM. The direct patterning of metallic circuit on flexible polymeric substrate indicates great potential for the use in electronics industry.

  8. Interfacial Structure and Photocatalytic Activity of Magnetron Sputtered TiO2 on Conducting Metal Substrates

    DEFF Research Database (Denmark)

    Daviðsdóttir, Svava; Petit, Jean-Pierre; Mermoux, Michel;

    2014-01-01

    The photocatalytic behavior of magnetron sputtered anatase TiO2 coatings on copper, nickel, and gold was investigated with the aim of understanding the effect of the metallic substrate and coating-substrate interface structure. Stoichiometry and nanoscale structure of the coating were investigated...... measurements. The nature of the metal substrate and coating-substrate interface had profound influence on the photocatalytic behavior. Less photon energy was required for TiO2 excitation on a nickel substrate, whereas TiO2 coating on copper showed a higher band gap attributed to quantum confinement. However......, the TiO2 coating on gold exhibited behavior typical of facile transfer of electrons to and from the CB, therefore requiring only a small amount of photon energy to make the TiO2 coating conductive....

  9. Characterization of PZT thin films on metal substrates; Charakterisierung von PZT-Duennschichten auf Metallsubstraten

    Energy Technology Data Exchange (ETDEWEB)

    Dutschke, A.

    2008-02-02

    state due to strong stresses within the films. The magnitude of the lattice distortion is independent of the crystallite size and its extent is generally smaller for crystallites in Nd-doped films than for such in undoped films. After the detailed analysis of the development of the boundary layer between metal substrate and PZT-film, it is identified as a non-ferroelectric, dielectric buffer-layer containing crystalline NiO und NiCr{sub 2}O{sub 4}, different chromium oxides and Pb{sub 2}(CrO{sub 4})O between the PZT film and the conductive substrate significantly diminishing the resulting dielectric properties of the system. By applying a non-stoichiometric La{sub 0,75}Sr{sub 0,2}MnO{sub 3} (ULSM)-electrode below the PZT-film, a better electrical contact is achieved, the (001)-orientation in undoped films is enhanced and narrow P-E-hysteresis loops can be obtained. (orig.)

  10. Growth of epitaxial {gamma}-Al{sub 2}O{sub 3} films on rigid single-crystal ceramic substrates and flexible, single-crystal-like metallic substrates by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Shin, Junsoo, E-mail: jshin@ornl.go [Materials Sciences and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States); Goyal, Amit [Materials Sciences and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States); Wee, Sung-Hun [Materials Sciences and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States); Department of Materials Science and Engineering, University of Tennessee, Knoxville, TN 37996 (United States)

    2009-08-03

    Epitaxial {gamma}-Al{sub 2}O{sub 3} thin films were grown on diverse substrates using pulsed laser deposition. The high quality of epitaxial growth and cubic structure of {gamma}-Al{sub 2}O{sub 3} films was confirmed by X-ray diffraction. SrTiO{sub 3} and MgO single crystal substrates were used to optimize the growth conditions for epitaxial {gamma}-Al{sub 2}O{sub 3} film. Under the optimized conditions, epitaxial {gamma}-Al{sub 2}O{sub 3} thin films were grown on flexible, single-crystal-like, metallic templates. These included untextured Hastelloy substrates with a biaxially textured MgO layer deposited using ion-beam-assisted-deposition and biaxially textured Ni-W metallic tapes with epitaxially grown and a biaxially textured, MgO buffer layer. These biaxially textured, {gamma}-Al{sub 2}O{sub 3} films on flexible, single-crystal-like substrates are promising for subsequent epitaxial growth of various complex oxide films used for electrical, magnetic and electronic device applications.

  11. Zr-based conversion coatings for multi-metal substrates

    OpenAIRE

    Cerezo Palacios, J.M.

    2015-01-01

    In this PhD work, a new surface treatment based on the application of Zr-based conversion coatings by immersion in a Cu containing Zr-based conversion solution was investigated as a replacement of the traditional phosphating process for the automotive industry. Nowadays most of the cars are made of a combination of different metals, therefore, one of the aims of this work is to study the formation mechanism of Zr-based conversion coatings on different metallic surfaces. Prior to the immersion...

  12. Chemical solution deposition (CSD) of CeO2 and La2Zr2O7 buffer layers on cube textured NiW substrates

    International Nuclear Information System (INIS)

    We present results of crack free layers of CeO2 and La2Zr2O7 deposited by means of CSD on cube textured Ni-4 at.% W substrates. EBSD-data show histograms with very good inplane- and out-of-plane textures and were used to simulate the critical current density in the YBCO layer. The surface roughness, a sensitive feature for good deposition results, was analyzed with a profilometer. In the CSD process we applied, the 2, 4-pentanedionates of the metal cations in glacial acetic acid and methanol served as starting substances

  13. Thickness dependent electronic structure and morphology of rubrene thin films on metal, semiconductor, and dielectric substrates

    Science.gov (United States)

    Sinha, Sumona; Mukherjee, M.

    2013-08-01

    The evolution of the electronic structure and morphology of rubrene thin films on noble-metal, semiconductor and dielectric substrates have been investigated as a function of thickness of deposited films by using photoelectron spectroscopy and atomic force microscopy. The clean polycrystalline Au and Ag were used as noble-metals, whereas, H passivated and SiO2 coated Si (100) were used as semiconductors and dielectric substrates. Discussion and comparison on interface dipole, energy level alignment, and surface morphology for the four cases are presented. The formation of dipole at metallic interfaces is found to occur due to push back effect. S parameter obtained from the variation of barrier height with the change of work function of the contacting metal indicates moderately weak interaction between rubrene and the metal substrates. The thickness dependent energy level alignment of the physisorbed rubrene films on different substrates is explained by a dielectric model in terms of electrostatic screening of photo-holes or photoemission final state relaxation energy. Films on all the substrates are found to grow following Stranski-Krastnov type growth mode and are more ordered at higher coverage.

  14. ZnO deposition on metal substrates: Relating fabrication, morphology, and wettability

    Science.gov (United States)

    Beaini, Sara S.; Kronawitter, Coleman X.; Carey, Van P.; Mao, Samuel S.

    2013-05-01

    It is not common practice to deposit thin films on metal substrates, especially copper, which is a common heat exchanger metal and practical engineering material known for its heat transfer properties. While single crystal substrates offer ideal surfaces with uniform structure for compatibility with oxide deposition, metallic surfaces needed for industrial applications exhibit non-idealities that complicate the fabrication of oxide nanostructure arrays. The following study explored different ZnO fabrication techniques to deposit a (super)hydrophobic thin film of ZnO on a metal substrate, specifically copper, in order to explore its feasibility as an enhanced condensing surface. ZnO was selected for its non-toxicity, ability to be made (super)hydrophobic with hierarchical roughness, and its photoinduced hydrophilicity characteristic, which could be utilized to pattern it to have both hydrophobic-hydrophilic regions. We investigated the variation of ZnO's morphology and wetting state, using SEMs and sessile drop contact angle measurements, as a function of different fabrication techniques: sputtering, pulsed laser deposition (PLD), electrodeposition and annealing Zn. We successfully fabricated (super)hydrophobic ZnO on a mirror finish, commercially available copper substrate using the scalable electrodeposition technique. PLD for ZnO deposition did not prove viable, as the ZnO samples on metal substrates were hydrophilic and the process does not lend itself to scalability. The annealed Zn sheets did not exhibit consistent wetting state results.

  15. Effect of interface wetting on flattening of freely fallen metal droplet onto flat substrate surface

    Science.gov (United States)

    Fukumoto, Masahiro; Nishioka, Eiji; Matsubara, Toshikazu

    2002-03-01

    A free-falling experiment was conducted as a simulation of a thermal spray process. The flattening behavior of the freely fallen metal droplet impinged onto a flat substrate surface was investigated in a fundamental way. The substrates were kept at various temperatures, and the substrates were coated with gold by physical vapor deposition (PVD) and were prepared in order to investigate the effect of wetting at the splat-substrate interface on the flattening behavior of the droplet. A falling atmosphere was created with atmospheric pressure of nitrogen to prevent the oxidation of the melted droplet. Experiments under low-pressure conditions also were conducted. The different types of splat morphology were recognized in experiments conducted under a nitrogen atmosphere with atmospheric pressure. The splat morphology on a substrate at room temperature was of the splash type, whereas that on a substrate at high temperature was of the disk type. The microstructure observed on a cross-section of the splat obtained on the substrate at room temperature was an isotropic coarse grain, whereas that on the substrate at high temperature was a fine columnar grain. The grain size changed transitionally with increasing substrate temperature. The temperature of the transition on the gold-coated substrate was higher than that on the naked substrate. The microstructure of the cross-section of the splat obtained under low pressure was finely columnar even on the substrate at room temperature. The results indicate that the metal droplet wets better under the low-pressure condition than under the atmospheric pressure nitrogen condition and that wetting has a significant role in the flattening of the droplet.

  16. Ultraviolet GaN photodetectors on Si via oxide buffer heterostructures with integrated short period oxide-based distributed Bragg reflectors and leakage suppressing metal-oxide-semiconductor contacts

    Energy Technology Data Exchange (ETDEWEB)

    Szyszka, A., E-mail: szyszka@ihp-microelectronics.com, E-mail: adam.szyszka@pwr.wroc.pl [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Janiszewskiego 11/17, 50-372 Wroclaw (Poland); Lupina, L.; Lupina, G.; Schubert, M. A.; Zaumseil, P. [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Haeberlen, M.; Storck, P.; Thapa, S. B. [Siltronic, Hanns-Seidel-Platz 4, 81737 München (Germany); Schroeder, T. [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); BTU Cottbus-Senftenberg, Konrad-Zuse-Strasse 1, 03046 Cottbus (Germany)

    2014-08-28

    Based on a novel double step oxide buffer heterostructure approach for GaN integration on Si, we present an optimized Metal-Semiconductor-Metal (MSM)-based Ultraviolet (UV) GaN photodetector system with integrated short-period (oxide/Si) Distributed Bragg Reflector (DBR) and leakage suppressing Metal-Oxide-Semiconductor (MOS) electrode contacts. In terms of structural properties, it is demonstrated by in-situ reflection high energy electron diffraction and transmission electron microscopy-energy dispersive x-ray studies that the DBR heterostructure layers grow with high thickness homogeneity and sharp interface structures sufficient for UV applications; only minor Si diffusion into the Y{sub 2}O{sub 3} films is detected under the applied thermal growth budget. As revealed by comparative high resolution x-ray diffraction studies on GaN/oxide buffer/Si systems with and without DBR systems, the final GaN layer structure quality is not significantly influenced by the growth of the integrated DBR heterostructure. In terms of optoelectronic properties, it is demonstrated that—with respect to the basic GaN/oxide/Si system without DBR—the insertion of (a) the DBR heterostructures and (b) dark current suppressing MOS contacts enhances the photoresponsivity below the GaN band-gap related UV cut-off energy by almost up to two orders of magnitude. Given the in-situ oxide passivation capability of grown GaN surfaces and the one order of magnitude lower number of superlattice layers in case of higher refractive index contrast (oxide/Si) systems with respect to classical III-N DBR superlattices, virtual GaN substrates on Si via functional oxide buffer systems are thus a promising robust approach for future GaN-based UV detector technologies.

  17. Excimer laser crystallization of amorphous silicon on metallic substrate

    Science.gov (United States)

    Delachat, F.; Antoni, F.; Slaoui, A.; Cayron, C.; Ducros, C.; Lerat, J.-F.; Emeraud, T.; Negru, R.; Huet, K.; Reydet, P.-L.

    2013-06-01

    An attempt has been made to achieve the crystallization of silicon thin film on metallic foils by long pulse duration excimer laser processing. Amorphous silicon thin films (100 nm) were deposited by radiofrequency magnetron sputtering on a commercial metallic alloy (N42-FeNi made of 41 % of Ni) coated by a tantalum nitride (TaN) layer. The TaN coating acts as a barrier layer, preventing the diffusion of metallic impurities in the silicon thin film during the laser annealing. An energy density threshold of 0.3 J cm-2, necessary for surface melting and crystallization of the amorphous silicon, was predicted by a numerical simulation of laser-induced phase transitions and witnessed by Raman analysis. Beyond this fluence, the melt depth increases with the intensification of energy density. A complete crystallization of the layer is achieved for an energy density of 0.9 J cm-2. Scanning electron microscopy unveils the nanostructuring of the silicon after laser irradiation, while cross-sectional transmission electron microscopy reveals the crystallites' columnar growth.

  18. Biaxially textured composite substrates

    Energy Technology Data Exchange (ETDEWEB)

    Groves, James R.; Foltyn, Stephen R.; Arendt, Paul N.

    2005-04-26

    An article including a substrate, a layer of a metal phosphate material such as an aluminum phosphate material upon the surface of the substrate, and a layer of an oriented cubic oxide material having a rock-salt-like structure upon the metal phosphate material layer is provided together with additional layers such as a HTS top-layer of YBCO directly upon a layer of a buffer material such as a SrTi.sub.x Ru.sub.1-x O.sub.3 layer.

  19. Comparison of different grading schemes in InGaAs metamorphic buffers on GaAs substrate: Tilt dependence on cross-hatch irregularities

    Science.gov (United States)

    Kumar, Rahul; Bag, Ankush; Mukhopadhyay, Partha; Das, Subhashis; Biswas, Dhrubes

    2015-12-01

    InGaAs graded metamorphic buffers (MBs) with different grading strategies have been grown by molecular beam epitaxy (MBE) on GaAs (0 0 1) substrate. A detailed comparative analysis of surface using atomic force microscopy (AFM), and bulk properties using high resolution X-ray diffraction (HRXRD) and room temperature photoluminescence (RTPL) of grown MBs have been presented to comprehend the effectiveness of different grading scheme on InGaAs MBs. Conventional, statistical and fractal analysis on measured AFM data has been performed for in-depth investigation of these surfaces. The grading scheme has been found to have little impact on residual strain while it affects the epitaxial tilt significantly. Moreover, the tilt has been found to depend on growth front irregularities. Tilt magnitude in a graded MB has been found to vary with composition while tilt azimuth has been found to be almost same in the graded layers. PL Intensity and a shift in the PL peaks have been used to study the quality of the MB and residual strain comparatively.

  20. Removing paint from a metal substrate using a flattened top laser

    Institute of Scientific and Technical Information of China (English)

    Shi Shu-Dong; Li Wei; Du Peng; Wang Meng; Song Feng; Liu Shu-Jing; Chen Nian-Jiang; Zhao Hong; Yang Wen-Shi

    2012-01-01

    In this paper,we investigate laser cleaning using a flattened top laser to remove paint coating from a metal substrate.Under the irradiation of a flattened top laser,the coating paint of the metal substrate can be removed efficiently by laser induced ablation,stress,and displacement force.The temperature distribution,stress,and displacement are calculated in the coating layer and substrate using finite element analysis.The effects of a Gaussian laser and a flattened top laser and the results of different diameters of laser spot are compared.The investigation shows that the flattened top laser can reduce the substrate damage and enhance the cleaning efficiency.This method meets the need of large area industrial cleaning applications by optimizing the flattened top laser parameters.

  1. Repairing Chipped Silicide Coatings on Refractory Metal Substrates

    Science.gov (United States)

    Youngquist, Robert

    2006-01-01

    The space shuttle orbiter s reaction control system (RCS) is a series of small thrusters that use hypergolic fuels to orient the orbiter in space. The RCS thrusters are constructed from a special niobium-based alloy -- the C-103. This alloy retains excellent mechanical properties from cryogenic temperature all the way up to 2,500 F (1,370 C). C-103 is susceptible to rapid oxidation at elevated temperatures. The authors have developed two methods to repair damaged R512a coatings on C-103. For the first repair technique, metal foundries, semiconductor manufacturers, and many other industries have developed and routinely use coatings that can easily be painted on metal to protect it from corrosion, including oxidation, to temperatures in excess of 2,500 F (1,370 C). This first repair technique is considered somewhat temporary. The second repair technique is based on using the native coating material of the RCS nozzles. the chipped area is ground out and a "green" R512a coating is applied to the repair area. Both repair techniques can be applied for moderate protection until the permanent laser-repair technique is available to the repair area.

  2. Structural study of ZnSe films grown on substrate with InxGa1-xAs and Al1-xGaxAs buffer layers: strain, relaxation and lattice parameter

    International Nuclear Information System (INIS)

    ZnSe layers of various thickness were grown on (001) GaAs substrates, using InxGa1-xAs or Al1-xGaxAs as buffer layers by molecular beam epitaxy and were studied by high-resolution x-ray diffraction. The principal structural characteristics of ZnSe layer and buffer layer were determined using several reflections, such as (004) and two pairs of coupled asymmetric reflections, namely (224), (-2-24) and (115) (-1-15). In order to evaluate their validity, the experimental data obtained from these reflections were handled by means of two known expressions found in the literature. We have found the relaxation process of ZnSe layers is well described by a geometrical model including the thermal strain and small strain due to work hardening. The relaxation process is faster for ZnSe grown on ternary buffer layers despite the fact that, some buffer layers are pseudomorphically grown to the substrate; therefore we conclude that not only the lattice mismatches have effect on the relaxation process but also the surface state of the buffer layer has an influence in this process. (author)

  3. Electroless deposition of metal nanoparticles on graphene with substrate-assisted techniques

    Science.gov (United States)

    Zaniewski, Anna M.; Trimble, Christie J.; Meeks, Veronica; Nemanich, Robert J.

    2015-03-01

    We present the electroless reduction of solution-based metal ions for nanoparticle deposition on a variety of substrates. The substrates include graphene-coated metals, insulators, doped semiconductors, and patterned ferroelectrics. We find that the metal ions are spontaneously reduced on a wide variety of graphene substrates, and the substrates play a large role in the nanoparticle coverage. For example, the reduction of gold chloride to gold nanoparticles on graphene/lithium niobate results in 3% nanoparticle coverage compared to 20% coverage on graphene/silicon and 60% on graphene/copper. Given that the work function of graphene is approximately 4.4eV, the Fermi level is -0.1 V vs the normal hydrogen electrode (NHE). Since the reduction potential of gold chloride is +1.002 V, the spontaneous transfer of electrons from the graphene to the metal ion is energetically favorable. However, we find substrates with similar work functions nevertheless result in varied deposition rates, which we attribute to electron availability. We also find that patterned ferrolectrics can be used as a template for patterned nanoparticle deposition, with and without graphene. This work is supported by the National Science Foundation under Grant # DMR-1206935.

  4. Salt-Driven Deposition of Thermoresponsive Polymer-Coated Metal Nanoparticles on Solid Substrates.

    Science.gov (United States)

    Zhang, Zhiyue; Maji, Samarendra; da Fonseca Antunes, André B; De Rycke, Riet; Hoogenboom, Richard; De Geest, Bruno G

    2016-06-13

    Here we report on a simple, generally applicable method for depositing metal nanoparticles on a wide variety of solid surfaces under all aqueous conditions. Noble-metal nanoparticles obtained by citrate reduction followed by coating with thermoresponsive polymers spontaneously form a monolayer-like structure on a wide variety of substrates in presence of sodium chloride whereas this phenomenon does not occur in salt-free medium. Interestingly, this phenomenon occurs below the cloud point temperature of the polymers and we hypothesize that salt ion-induced screening of electrostatic charges on the nanoparticle surface entropically favors hydrophobic association between the polymer-coated nanoparticles and a hydrophobic substrate. PMID:27142455

  5. Deposition of MgB2 Superconducting Films on Different Metal Substrates

    Institute of Scientific and Technical Information of China (English)

    CHEN Li-Ping; FENG Qing-Rong; LI Fen; GUO Tao; ZHUANG Cheng-Gang; YAO Dan; DING Li-Li; ZHANG Kai-Cheng; GAN Zi-Zhao; XIONG Guang-Cheng

    2007-01-01

    By a method of hybrid physical-chemical vapour deposition (HPCVD) on three metal substrates of stainless steel, copper and niobium, we deposit MgB2 superconducting films over 1 μm thickness. All of them have zero resistance temperatures TC(0) > 36 K and critical current densities JC (10K, 0 T) > 106 A/cm2. Meanwhile, in the bending test, all the MgB2 superconducting films adhere strongly to the metal substrates without peeling off. Therefore, the MgB2 superconducting films supplied by the HPCVD method exhibit preferable electrical, magnetic and mechanical properties, and have potential applications in future.

  6. An all chemical solution deposition approach for the growth of highly textured CeO2 cap layers on La2Zr2O7-buffered long lengths of biaxially textured Ni-W substrates for YBCO-coated conductors

    International Nuclear Information System (INIS)

    A reel-to-reel, dip coating process has been developed to continuously deposit epitaxial La2Zr2O7 (LZO) and CeO2 on 5 m long cube-textured {100} (001)Ni tapes. Recent results for La2Zr2O7 and CeO2 buffer layers deposited on long lengths of Ni substrate for the realization of YBa2Cu3O7-x (YBCO)-coated conductors are presented. The major achievement is the development of a new all chemical solution deposition (CSD) process leading to the formation of highly textured buffer layers at moderate annealing temperatures. Reproducible highly textured, dense and crack-free LZO buffer layers and CeO2 cap layers were obtained for annealing temperatures as low as 900 deg. C in a reducing atmosphere (Ar-5 at.%-H2). The thickness of the LZO buffer layers was determined to be (200 ± 10) nm per single coating; prepared cerium oxide layers showed a thickness of 60 nm ± 10 nm. Pulsed laser deposition (PLD) was used to grow YBCO films on these substrates. A Tc0 of T = 90.5 K and ΔTc = 1.4 K was obtained on PLD-YBCO/CSD-CeO2 /CSD-LZO/Ni-5 at.% W, which shows the outstanding features of this new buffer layer architecture processed by CSD. The large layer thickness combined with low annealing temperatures is the main advantage of this new process for low-cost buffer layer deposition on Ni-RABiTS (rolling-assisted biaxially textured substrates)

  7. Incorporation of metal nanoparticles into wood substrate and methods

    Energy Technology Data Exchange (ETDEWEB)

    Rector, Kirk D; Lucas, Marcel

    2015-11-04

    Metal nanoparticles were incorporated into wood. Ionic liquids were used to expand the wood cell wall structure for nanoparticle incorporation into the cell wall structure. Nanoparticles of elemental gold or silver were found to be effective surface enhanced Raman spectroscopy (SERS) imaging contrast or sensing agents. Nanoparticles of elemental iron were found to be efficient microwave absorbers and caused localized heating for disrupting the integrity of the lignocellulosic matrix. Controls suggest that the localized heating around the iron nanoparticles reduces losses of cellulose in the form of water, volatiles and CO.sub.2. The ionic liquid is needed during the incorporation process at room temperature. The use of small amounts of ionic liquid combined with the absence of an ionic liquid purification step and a lower energy and water use are expected to reduce costs in an up-scaled pretreatment process.

  8. Highly textured oxypnictide superconducting thin films on metal substrates

    Energy Technology Data Exchange (ETDEWEB)

    Iida, Kazumasa, E-mail: iida@nuap.nagoya-u.ac.jp; Kurth, Fritz; Grinenko, Vadim; Hänisch, Jens [Institute for Metallic Materials, IFW Dresden, D-01171 Dresden (Germany); Chihara, Masashi; Sumiya, Naoki; Hatano, Takafumi; Ikuta, Hiroshi [Department of Crystalline Materials Science, Nagoya University, Chikusa, Nagoya 464-8603 (Japan); Ichinose, Ataru; Tsukada, Ichiro [Central Research Institute of Electric Power Industry, 2-6-1 Nagasaka, Yokosuka, Kanagawa 240-0196 (Japan); Matias, Vladimir [iBeam Materials, Inc., 2778A Agua Fria Street, Santa Fe, New Mexico 87507 (United States); Holzapfel, Bernhard [Institute for Technical Physics, Karlsruhe Institute of Technology, Hermann von Helmholtz-Platz 1, D-76344 Eggenstein-Leopoldshafen (Germany)

    2014-10-27

    Highly textured NdFeAs(O,F) thin films have been grown on ion beam assisted deposition-MgO/Y{sub 2}O{sub 3}/Hastelloy substrates by molecular beam epitaxy. The oxypnictide coated conductors showed a superconducting transition temperature (T{sub c}) of 43 K with a self-field critical current density (J{sub c}) of 7.0×10{sup 4} A/cm{sup 2} at 5 K, more than 20 times higher than powder-in-tube processed SmFeAs(O,F) wires. Albeit higher T{sub c} as well as better crystalline quality than Co-doped BaFe{sub 2}As{sub 2} coated conductors, in-field J{sub c} of NdFeAs(O,F) was lower than that of Co-doped BaFe{sub 2}As{sub 2}. These results suggest that grain boundaries in oxypnictides reduce J{sub c} significantly compared to that in Co-doped BaFe{sub 2}As{sub 2} and, hence biaxial texture is necessary for high J{sub c.}.

  9. Charge dependent asphaltene adsorption onto metal substrate : electrochemistry and AFM, STM, SAM, SEM analysis

    Energy Technology Data Exchange (ETDEWEB)

    Batina, N.; Morales-Martinez, J. [Univ. Autonoma Metropolitana-Iztapalapa (Mexico). Lab. de Nanotecnologia e Ingenieria Molecular; Ivar-Andersen, S. [Technical Univ. of Denmark (Denmark). Dept. Hem. Eng; Lira-Galeana, C. [Inst. Mexicano del Petroleo, Lazaro (Mexico). Molecular Simulation Research Program; De la Cruz-Hernandez, W.; Cota-Araiza, L.; Avalos-Borja, M. [Univ. Nacional Autonoma de Mexico (Mexico)

    2008-07-01

    Asphaltenes have been identified as the main component of pipeline molecular deposits that cause plugging of oil wells. In this study, Atomic Force Microscopy (AFM), Scanning Tunneling Microscopy (STM), Scanning Auger Microprobe Spectroscopy (SAM) and Scanning Electron Microscopy (SEM) were used to characterized molecular deposits of Mexican crude oil and asphaltenes formed at a charged metal surface. The qualitative and quantitative characterization involved determining the size and shape of adsorbed molecules and aggregates, and the elemental analysis of all components in molecular films. Samples were prepared by electrolytic deposition under galvanostatic or potentiostatic conditions directly from the crude oil or asphaltene in toluene solutions. The study showed that the formation of asphaltene deposit depends on the metal substrate charge. Asphaltenes as well as crude oil readily adsorbed at the negatively charged metal surface. Two elements were present, notably carbon and sulfur. Their content ratio varied depending on the metal substrate charge.

  10. Properties of Pb(0.92)La(0.08)Zr(0.52)Ti(0.48)O(3) thin films grown on SrRuO(3) buffered nickel and silicon substrates by chemical solution deposition

    Energy Technology Data Exchange (ETDEWEB)

    Narayanan, M.; Ma, B.; Tong, S.; Koritala, R.; Balachandran, U. (Energy Systems); ( MSD)

    2012-01-01

    Ferroelectric film-on-foil capacitors are suitable to replace discrete passive components in the quest to develop electronic devices that show superior performance and are smaller in size. The film-on-foil approach is the most practical method to fabricate such components. Films of Pb{sub 0.92}La{sub 0.08}Zr{sub 0.52}Ti{sub 0.48}O{sub 3} (PLZT) were deposited on SrRuO{sub 3} (SRO) buffer films over nickel and silicon substrates. High-quality polycrystalline SRO thin-film electrodes were first deposited by chemical solution deposition. A phase pure, dense, uniform microstructure with grain size <100 nm was obtained in films crystallized at 700 C. The room-temperature resistivity of the SRO films crystallized at 700 C was {approx}800-900 {mu}{Omega}-cm. The dielectric properties of sol-gel derived PLZT capacitors on SRO-buffered nickel were evaluated as a function of temperature, bias field, and frequency, and the results were compared to those of the same films on silicon substrates. The comparison demonstrated the integrity of the buffer layer and its compatibility with nickel substrates. Device-quality dielectric properties were measured on PLZT films deposited on SRO-buffered nickel foils and found to be superior to those for PLZT on SRO-buffered silicon and expensive platinized silicon. These results suggest that SRO films can act as an effective barrier layer on nickel substrates suitable for embedded capacitor applications.

  11. Asymmetries in transition metal XPS spectra: metal nanoparticle structure, and interaction with the graphene-structured substrate surface.

    Science.gov (United States)

    Sacher, E

    2010-03-16

    Transition-metal XPS spectra have traditionally been considered to possess a natural asymmetry, extending to the high-binding-energy side. This is based on the fact that these spectra have generally been found experimentally to have such an asymmetry, as well as on the confirmation of asymmetry offered by the Doniach-Sunjić equation, an equation based on the proposal that the conduction electron scattering amplitude for interband absorption or emission in metals, at the Fermi level, is a singularity. Our discovery that metal nanoparticles, prepared under vacuum and characterized without exposure to air, have symmetric peaks, which become asymmetric with time, informed us that these peak asymmetries have other sources. On the basis of our belief that all metal spectra are composed of symmetric peaks, where the asymmetries are attributed to overlapping minor peaks that are consistent with known physical and chemical phenomena associated with that metal, we have shown that, for the metals that we have studied, these asymmetries contain much information, otherwise unavailable, on the structures, contaminants, oxidation, and interfacial interactions of nanoparticle surfaces. The existence of this information has been demonstrated for several metals, and its value is shown by its use in explaining the strong interfacial bonding of the nanoparticles with substrates having graphene structures. A possible future research direction is offered in the field of metal-metal interactions in nanoparticle alloys.

  12. Active-matrix organic light-emitting diode displays on flexible metal foil substrates

    Science.gov (United States)

    Chuang, Ta-Ko

    This dissertation presents the research efforts that deal with the development of polysilicon thin film transistors (TFTs) on stainless-steel-foil substrates, the implementation of high-resolution flexible active-matrix backplanes, and the integration of the flexible polysilicon TFT backplanes with polymer light-emitting diodes. This research investigated the preparation of the steel foil substrates, the fabrication of flexible polysilicon TFT backplanes and polymer light emitting diodes (PLEDs), and the encapsulation of the flexible Active Matrix Polymer Light Emitting Diode displays. The first successful integration of polysilicon TFT backplane with PLEDs onto light-weight, robust, and flexible stainless-steel-foil substrates is presented. A top-emitting, monochrome active-matrix polymer light-emitting diode (AM-PLED) display, having the VGA (640x480) format and a 230 dpi resolution, is demonstrated for the first time on flexible stainless-steel-foil substrates. This work validates the compatibility of the polysilicon technology for high-resolution flexible AM-PLED displays. Furthermore, this work shows that a variety of other large-area microelectronics could also be implemented onto flexible metal foils, benefiting by the metal oil dimensional stability and ability to withstand high process temperature. In conclusion, the polysilicon TFT technology combining with metal-foil substrates opens up a new road for flexible displays as well as large-area flexible electronic applications.

  13. Growth of HT-LiCoO2 thin films on Pt-metalized silicon substrates

    Institute of Scientific and Technical Information of China (English)

    ZHANG Yao; CHUNG Chiyuen; ZHU Min

    2008-01-01

    Layered LiCoO2 (HT-LiCoO2) films were grown on Pt-metalized silicon (PMS) substrates and polished bulk nickel (PBN) substrates by pulsed laser deposition. The effects of substrate temperature, oxygen pressure, and substrate surface roughness on the microstructure of LiCoO2 films were investigated. It has been found that a higher substrate temperature and a higher oxygen pressure favor the formation of better crystallized and less lithium-deficient HT-LiCoO2 films. The HT-LiCoO2 film deposited on PBN substrates consists of large randomly orientated equiaxial grains, whereas on PMS substrate, it is made up of loosely packed highly [001] preferential orientated triangular shaped grains with the average grain size less than 100nm. Electrochemical measurements show that the highly [001] preferentially orientated nanostructured HT-LiCoO2 thin film grown on PMS substrate has good structural stability upon lithium insertion/extraction and can deliver an initial discharge capacity of approximately 45 μA·h·cm-2μm-1 with a cycling efficiency of above 99% at the charge/discharge rate of 0.5C.

  14. Thin film pc-Si by aluminium induced crystallization on metallic substrate

    Directory of Open Access Journals (Sweden)

    Cayron C.

    2013-04-01

    Full Text Available Thin film polycrystalline silicon (pc-Si on flexible metallic substrates is promising for low cost production of photovoltaic solar cells. One of the attractive methods to produce pc-Si solar cells consists in thickening a large-grained seed layer by epitaxy. In this work, the deposited seed layer is made by aluminium induced crystallization (AIC of an amorphous silicon (a-Si thin film on metallic substrates (Ni/Fe alloy initially coated with a tantalum nitride (TaN conductive diffusion barrier layer. Effect of the thermal budget on the AIC grown pc-Si seed layer was investigated in order to optimize the process (i.e. the quality of the pc-Si thin film. Structural and optical characterizations were carried out using optical microscopy, μ-Raman and Electron Backscatter Diffraction (EBSD. At optimal thermal annealing conditions, the continuous AIC grown pc-Si thin film showed an average grain size around 15 μm. The grains were preferably (001 oriented which is favorable for its epitaxial thickening. This work proves the feasibility of the AIC method to grow large grains pc-Si seed layer on TaN coated metal substrates. These results are, in terms of grains size, the finest obtained by AIC on metallic substrates.

  15. Materials design considerations involved in the fabrication of implantable bionics by metallization of ceramic substrates.

    Science.gov (United States)

    Patel, Sunil; Guenther, Thomas; Dodds, Christopher W D; Kolke, Sergej; Privat, Karen L; Matteucci, Paul B; Suaning, Gregg J

    2013-01-01

    The Pt metallization of co-fired Al2O3/SiO2 substrates containing Pt feedthroughs was shown to be a suitable means to construct implantable bionics. The use of forge welding to join an electrode to such a metallized feedthrough was demonstrated and subsequently evaluated through the use of metallography and electron microscopy. Metallurgical phenomena involved in forge welding relevant to the fabrication of all types of biomedical implants are discussed within this paper. The affect of thermal profiles used in brazing or welding to build implantable devices from metal components is analysed and the case for considered selection of alloys in implant design is put forward.

  16. Effects of AlN buffer layer thickness on the crystallinity and surface morphology of 10-µm-thick a-plane AlN films grown on r-plane sapphire substrates

    Science.gov (United States)

    Lin, Chia-Hung; Tamaki, Shinya; Yamashita, Yasuhiro; Miyake, Hideto; Hiramatsu, Kazumasa

    2016-08-01

    10-µm-thick a-plane AlN(11\\bar{2}0) films containing a low-temperature AlN (LT-AlN) buffer layer and a high-temperature AlN (HT-AlN) film were prepared on r-plane sapphire (1\\bar{1}02) substrates. The crystallinity of all the samples with different LT-AlN buffer layer thicknesses was improved after thermal annealing and HT-AlN growth, mainly owing to the elimination of domain boundaries and the concurrent suppression of facet formation. The optimum crystallinity of HT-AlN films was obtained with full widths at half maximum of the X-ray rocking curves of 660 arcsec for AlN(11\\bar{2}0)\\parallel [1\\bar{1}00]AlN and 840 arcsec for (0002) using a 200-nm-thick LT-AlN buffer layer.

  17. Reduction in edge dislocation density in corundum-structured α-Ga2O3 layers on sapphire substrates with quasi-graded α-(Al,Ga)2O3 buffer layers

    Science.gov (United States)

    Jinno, Riena; Uchida, Takayuki; Kaneko, Kentaro; Fujita, Shizuo

    2016-07-01

    Efforts have been made to reduce the density of defects in corundum-structured α-Ga2O3 thin films on sapphire substrates by applying quasi-graded α-(Al x Ga1‑ x )2O3 buffer layers. Transmission electron microscopy images revealed that most strains were located in the α-(Al x Ga1‑ x )2O3 buffer layers, and that the total density of dislocations in the α-Ga2O3 thin films was successfully decreased by more than one order of magnitude compared with that without buffer layers, that is, the screw and edge dislocation densities were about 3 × 108 and 6 × 108 cm‑2, respectively.

  18. Determination of interfacial adhesion strength between oxide scale and substrate for metallic SOFC interconnects

    Science.gov (United States)

    Sun, X.; Liu, W. N.; Stephens, E.; Khaleel, M. A.

    The interfacial adhesion strength between the oxide scale and the substrate is crucial to the reliability and durability of metallic interconnects in solid oxide fuel cell (SOFC) operating environments. It is necessary, therefore, to establish a methodology to quantify the interfacial adhesion strength between the oxide scale and the metallic interconnect substrate, and furthermore to design and optimize the interconnect material as well as the coating materials to meet the design life of an SOFC system. In this paper, we present an integrated experimental/analytical methodology for quantifying the interfacial adhesion strength between the oxide scale and a ferritic stainless steel interconnect. Stair-stepping indentation tests are used in conjunction with subsequent finite element analyses to predict the interfacial strength between the oxide scale and Crofer 22 APU substrate.

  19. Microplasmas for direct, substrate-independent deposition of nanostructured metal oxides

    Science.gov (United States)

    Mackie, Katherine E.; Pebley, Andrew C.; Butala, Megan M.; Zhang, Jinping; Stucky, Galen D.; Gordon, Michael J.

    2016-07-01

    A general, substrate-independent method for plasma deposition of nanostructured, crystalline metal oxides is presented. The technique uses a flow-through, micro-hollow cathode plasma discharge (supersonic microplasma jet) with a "remote" ring anode to deliver a highly directed flux of growth species to the substrate. A diverse range of nanostructured materials (e.g., CuO, α-Fe2O3, and NiO) can be deposited on any room temperature surface, e.g., conductors, insulators, plastics, fibers, and patterned surfaces, in a conformal fashion. The effects of deposition conditions, substrate type, and patterning on film morphology, nanostructure, and surface coverage are highlighted. The synthesis approach presented herein provides a general and tunable method to deposit a variety of functional and hierarchical metal oxide materials on many different surfaces. High surface area, conversion-type CuO electrodes for Li-ion batteries are demonstrated as a proof-of-concept example.

  20. Non-polar a-plane ZnO films grown on r-Al2O3 substrates using GaN buffer layers

    Science.gov (United States)

    Xu, C. X.; Chen, W.; Pan, X. H.; Chen, S. S.; Ye, Z. Z.; Huang, J. Y.

    2016-09-01

    In this work, GaN buffer layer has been used to grow non-polar a-plane ZnO films by laser-assisted and plasma-assisted molecular beam epitaxy. The thickness of GaN buffer layer ranges from ∼3 to 12 nm. The GaN buffer thickness effect on the properties of a-plane ZnO thin films is carefully investigated. The results show that the surface morphology, crystal quality and optical properties of a-plane ZnO films are strongly correlated with the thickness of GaN buffer layer. It was found that with 6 nm GaN buffer layer, a-plane ZnO films display the best crystal quality with X-ray diffraction rocking curve full-width at half-maximum of only 161 arcsec for the (101) reflection.

  1. Heavy metal leaching from coal fly ash amended container substrates during Syngonium production.

    Science.gov (United States)

    Li, Qiansheng; Chen, Jianjun; Li, Yuncong

    2008-02-01

    Coal fly ash has been proposed to be an alternative to lime amendment and a nutrient source of container substrates for ornamental plant production. A great concern over this proposed beneficial use, however, is the potential contamination of surface and ground water by heavy metals. In this study, three fly ashes collected from Florida, Michigan, and North Carolina and a commercial dolomite were amended in a basal substrate. The formulated substrates were used to produce Syngonium podophyllum Schott 'Berry Allusion' in 15-cm diameter containers in a shaded greenhouse. Leachates from the containers were collected during the entire six months of plant production and analyzed for heavy metal concentrations. There were no detectable As, Cr, Hg, Pb, and Se in the leachates; Cd and Mo were only detected in few leachate samples. The metals constantly detected were Cu, Mn, Ni, and Zn. The total amounts of Cu, Mn, Ni, and Zn leached during the six-month production period were 95, 210, 44, and 337 microg per container, indicating that such amounts in leachates may contribute little to contamination of surface and ground water. In addition, plant growth indices and fresh and dry weights of S. podophyllum 'Berry Allusion' produced from fly ash and dolomite-amended substrates were comparable except for the plants produced from the substrate amended with fly ash collected from Michigan which had reduced growth indices and fresh and dry weights. Thus, selected fly ashes can be alternatives to commercial dolomites as amendments to container substrates for ornamental plant production. The use of fly ashes as container substrate amendments should represent a new market for the beneficial use of this coal combustion byproduct.

  2. Heavy metal leaching from coal fly ash amended container substrates during Syngonium production

    Energy Technology Data Exchange (ETDEWEB)

    Li, Q.S.; Chen, J.J.; Li, Y.C. [University of Florida, Apopka, FL (United States)

    2008-02-15

    Coal fly ash has been proposed to be an alternative to lime amendment and a nutrient source of container substrates for ornamental plant production. A great concern over this proposed beneficial use, however, is the potential contamination of surface and ground water by heavy metals. In this study, three fly ashes collected from Florida, Michigan, and North Carolina and a commercial dolomite were amended in a basal substrate. The formulated substrates were used to produce Syngonium podophyllum Schott 'Berry Allusion' in 15-cm diameter containers in a shaded greenhouse. Leachates from the containers were collected during the entire six months of plant production and analyzed for heavy metal concentrations. There were no detectable As, Cr, Hg, Pb, and Se in the leachates; Cd and Mo were only detected in few leachate samples. The metals constantly detected were Cu, Mn, Ni, and Zn. The total amounts of Cu, Mn, Ni, and Zn leached during the six-month production period were 95, 210, 44, and 337 {mu} g per container, indicating that such amounts in leachates may contribute little to contamination of surface and ground water. In addition, plant growth indices and fresh and dry weights of S. podophyllum 'Berry Allusion' produced from fly ash and dolomite-amended substrates were comparable except for the plants produced from the substrate amended with fly ash collected from Michigan which had reduced growth indices and fresh and dry weights. Thus, selected fly ashes can be alternatives to commercial dolomites as amendments to container substrates for ornamental plant production. The use of fly ashes as container substrate amendments should represent a new market for the beneficial use of this coal combustion byproduct.

  3. Spinel-structured metal oxide on a substrate and method of making same by molecular beam epitaxy

    Science.gov (United States)

    Chambers, Scott A.

    2006-02-21

    A method of making a spinel-structured metal oxide on a substrate by molecular beam epitaxy, comprising the step of supplying activated oxygen, a first metal atom flux, and at least one other metal atom flux to the surface of the substrate, wherein the metal atom fluxes are individually controlled at the substrate so as to grow the spinel-structured metal oxide on the substrate and the metal oxide is substantially in a thermodynamically stable state during the growth of the metal oxide. A particular embodiment of the present invention encompasses a method of making a spinel-structured binary ferrite, including Co ferrite, without the need of a post-growth anneal to obtain the desired equilibrium state.

  4. Novel Pretreatment of Hard Metal Substrate for Better Performance of Diamond Coated Cutting Tools

    Institute of Scientific and Technical Information of China (English)

    LU Fan-xiu; TANG Wei-zhong; MIAO Jin-qi; HE Li-fu; LI Cheng-ming; CHEN Guang-chao

    2004-01-01

    A surface engineering approach for a novel pre-treatment of hard metal tool substrate for optimum adhesion of diamond coatings is presented. Firstly, an alkaline solution was used to etch the WC grains to generate a rough surface for better mechanical interlocking. Subsequently, surface Co was removed by etching in acid solution. Then the hard metal substrate was boronized to form a compound interlayer which acted as an efficient diffusion barrier to prevent the outward diffusion of Co. Novel nano-microcrystalline composite diamond film coatings with a very smooth surface was deposited on the surface engineering pre-treated hard metal surface. Promising results of measurement in adhesion strength as well as field cutting tests have been obtained.

  5. Development of a large plano-elliptical neutron-focusing supermirror with metallic substrates.

    Science.gov (United States)

    Takeda, Shin; Yamagata, Yutaka; Yamada, Norifumi L; Hino, Masahiro; Hosobata, Takuya; Guo, Jiang; Morita, Shin-Ya; Oda, Tatsuro; Furusaka, Michihiro

    2016-06-13

    Results of this study demonstrated that electroless nickel-phosphorus (NiP) plated metal substrate is an excellent material for producing large aspherical neutron-focusing supermirrors. A large plano-elliptical neutron-focusing supermirror comprising two metallic segments was fabricated using single-point diamond cutting, precision polishing and supermirror coating. The average surface roughness of the metallic substrates was approximately 0.3 nm rms. For evaluation, the focusing supermirror was installed at the SOFIA neutron reflectometer, showing high neutron reflectivity and giving minimal beam width of 0.34 mm in FWHM. Because of the large beam divergence accepted by the mirror, the count rate with the focusing mirror was 3.3 times higher than that obtained using conventional two-slit collimation. PMID:27410268

  6. Calcium and Zinc Containing Bactericidal Glass Coatings for Biomedical Metallic Substrates

    Directory of Open Access Journals (Sweden)

    Leticia Esteban-Tejeda

    2014-07-01

    Full Text Available The present work presents new bactericidal coatings, based on two families of non-toxic, antimicrobial glasses belonging to B2O3–SiO2–Na2O–ZnO and SiO2–Na2O–Al2O3–CaO–B2O3 systems. Free of cracking, single layer direct coatings on different biomedical metallic substrates (titanium alloy, Nb, Ta, and stainless steel have been developed. Thermal expansion mismatch was adjusted by changing glass composition of the glass type, as well as the firing atmosphere (air or Ar according to the biomedical metallic substrates. Formation of bubbles in some of the glassy coatings has been rationalized considering the reactions that take place at the different metal/coating interfaces. All the obtained coatings were proven to be strongly antibacterial versus Escherichia coli (>4 log.

  7. Bioaccumulation of heavy metals by Phragmites australis cultivated in synthesized substrates

    Institute of Scientific and Technical Information of China (English)

    WANG He; JIA Yongfeng

    2009-01-01

    Accumulation of heavy metals from various oxides with adsorbed cadmium by wetland plant Phragmites australis was studied to evaluate the fate of heavy metals in the sediment of constructed wetlands.Hoagland solution Was used as nutrition supply,and single metal oxide with adsorbed cadmium was applied as contaminant to study the accumulation characteristics of cadmium and the substrate metals by P. australis.After 45-d treatment,the bioaccumulation degree in root followed the order:Al(OH)3>Al2O3>Fe3O4>MnO2 >FeOOH.Heavy metals absorbed by P. australis were largely immobilized by the roots with little translocation to aboveground Darts.

  8. Metal cation cross-linked nanocellulose hydrogels as tissue engineering substrates.

    Science.gov (United States)

    Zander, Nicole E; Dong, Hong; Steele, Joshua; Grant, John T

    2014-01-01

    The use of cellulose materials for biomedical applications is attractive due to their low cost, biocompatibility, and biodegradability. Specific processing of cellulose to yield nanofibrils further improves mechanical properties and suitability as a tissue engineering substrate due to the similarity to the fibrous structure, porosity, and size-scale of the native extracellular matrix. In order to generate the substrate, nanocellulose hydrogels were fabricated from carboxylated cellulose nanofibrils via hydrogelation using metal salts. Hydrogels cross-linked with Ca(2+) and Fe(3+) were investigated as tissue culture substrates for C3H10T1/2 fibroblast cells. Control substrates as well as those with physically adsorbed and covalently attached fibronectin protein were evaluated with X-ray photoelectron spectroscopy (XPS), Fourier transform infrared (FTIR), and enzyme linked immunosorbent assay (ELISA). Significantly more cells were attached to surfaces modified with protein, with the highest number of cells adhered to the calcium cross-linked hydrogels with covalently attached protein.

  9. Effect of heavy metals on pH buffering capacity and solubility of Ca, Mg, K, and P in non-spiked and heavy metal-spiked soils.

    Science.gov (United States)

    Najafi, Sarvenaz; Jalali, Mohsen

    2016-06-01

    In many parts of the world, soil acidification and heavy metal contamination has become a serious concern due to the adverse effects on chemical properties of soil and crop yield. The aim of this study was to investigate the effect of pH (in the range of 1 to 3 units above and below the native pH of soils) on calcium (Ca), magnesium (Mg), potassium (K), and phosphorus (P) solubility in non-spiked and heavy metal-spiked soil samples. Spiked samples were prepared by cadmium (Cd), copper (Cu), nickel (Ni), and zinc (Zn) as chloride salts and incubating soils for 40 days. The pH buffering capacity (pHBC) of each sample was determined by plotting the amount of H(+) or OH(-) added (mmol kg(-1)) versus the related pH value. The pHBC of soils ranged from 47.1 to 1302.5 mmol kg(-1) for non-spiked samples and from 45.0 to 1187.4 mmol kg(-1) for spiked soil samples. The pHBC values were higher in soil 2 (non-spiked and spiked) which had higher calcium carbonate content. The results indicated the presence of heavy metals in soils generally decreased the solution pH and pHBC values in spiked samples. In general, solubility of Ca, Mg, and K decreased with increasing equilibrium pH of non-spiked and spiked soil samples. In the case of P, increasing the pH to about 7, decreased the solubility in all soils but further increase of pH from 7, enhanced P solubility. The solubility trends and values for Ca, Mg, and K did not differed significantly in non-spiked and spiked samples. But in the case of P, a reduction in solubility was observed in heavy metal-spiked soils. The information obtained in this study can be useful to make better estimation of the effects of soil pollutants on anion and cation solubility from agricultural and environmental viewpoints.

  10. Epitaxial growth of YBa2Cu3O7−x films on Ce0.9La0.1O2−y buffered yttria-stabilized zirconia substrates by an all-chemical-solution route

    DEFF Research Database (Denmark)

    Yue, Zhao; Wu, Wei; Tang, Xiao;

    2014-01-01

    In view of high rate fabrication of coated conductors at low-cost, YBa2Cu3O7 (YBCO) films on Ce0.9La0.1O2−y buffered yttria-stabilized zirconia substrates were deposited by means of a novel low-fluorine metal–organic solution route. A high critical current density of 3 MA cm−2 (77 K, self field...

  11. Enhancement of multiferroic properties of Pb(Fe1/2Nb1/2)O-3 thin films on SrRuO3 buffered SrTiO3 substrates

    OpenAIRE

    Yan, Li; Zhao, X.; Li, Jiefang; Viehland, Dwight D.

    2009-01-01

    We report multiferroic properties of Pb(Fe1/2Nb1/2)O-3 (or PFN) epitaxial thin layers grown on (001), (110), and (111) SrTiO3 substrates with and without a SrRuO3 (SRO) buffer. Our findings are as follows: (i) the constraint stress on (001) substrates is more than ten times larger than those on (110) and (111); (ii) this large constraint stress induces higher piezoelectric constants, magnetic permeability and magnetization for (001) PFN compared with (110) and (111) layers; (iii) epitaxy dist...

  12. Growth of InAs Quantum Dots on Germanium Substrate Using Metal Organic Chemical Vapor Deposition Technique

    Directory of Open Access Journals (Sweden)

    Tyagi Renu

    2009-01-01

    Full Text Available Abstract Self-assembled InAs quantum dots (QDs were grown on germanium substrates by metal organic chemical vapor deposition technique. Effects of growth temperature and InAs coverage on the size, density, and height of quantum dots were investigated. Growth temperature was varied from 400 to 450 °C and InAs coverage was varied between 1.40 and 2.35 monolayers (MLs. The surface morphology and structural characteristics of the quantum dots analyzed by atomic force microscope revealed that the density of the InAs quantum dots first increased and then decreased with the amount of InAs coverage; whereas density decreased with increase in growth temperature. It was observed that the size and height of InAs quantum dots increased with increase in both temperature and InAs coverage. The density of QDs was effectively controlled by growth temperature and InAs coverage on GaAs buffer layer.

  13. Spectral and total temperature-dependent emissivities of few-layer structures on a metallic substrate.

    Science.gov (United States)

    Blandre, Etienne; Chapuis, Pierre-Olivier; Vaillon, Rodolphe

    2016-01-25

    We investigate the thermal radiative emission of few-layer structures deposited on a metallic substrate and its dependence on temperature with the Fluctuational Electrodynamics approach. We highlight the impact of the variations of the optical properties of metallic layers on their temperature-dependent emissivity. Fabry-Pérot spectral selection involving at most two transparent layers and one thin reflective layer leads to well-defined peaks and to the amplification of the substrate emission. For a single Fabry-Pérot layer on a reflective substrate, an optimal thickness that maximizes the emissivity of the structure can be determined at each temperature. A thin lossy layer deposited on the previous structure can enhance interference phenomena, and the analysis of the participation of each layer to the emission shows that the thin layer is the main source of emission. Eventually, we investigate a system with two Fabry-Pérot layers and a metallic thin layer, and we show that an optimal architecture can be found. The total hemispherical emissivity can be increased by one order of magnitude compared to the substrate emissivity.

  14. Growth of c-plane ZnO on γ-LiAlO{sub 2} (1 0 0) substrate with a GaN buffer layer by plasma assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Yan, T. [Department of Materials and Optoelectronic Science/Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan, ROC (China); Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002 (China); Lu, C.-Y.J. [Department of Materials and Optoelectronic Science/Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan, ROC (China); Schuber, R. [Institute of Applied Physics/DFG-Center for Functional Nanostructures (CFN), Karlsruhe Institute of Technology, DE-76131 Karlsruhe (Germany); Chang, L., E-mail: lwchang@mail.nsysu.edu.tw [Department of Materials and Optoelectronic Science/Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan, ROC (China); Schaadt, D.M. [Institute of Applied Physics/DFG-Center for Functional Nanostructures (CFN), Karlsruhe Institute of Technology, DE-76131 Karlsruhe (Germany); Institute of Energy Research and Phyiscal Technologies, Clausthal Technical University, Am Stollen 19B, D-38640 Goslar (Germany); Chou, M.M.C.; Ploog, K.H. [Department of Materials and Optoelectronic Science/Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan, ROC (China); Chiang, C.-M. [Department of Chemistry, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan, ROC (China)

    2015-10-01

    Highlights: • ZnO epilayers were grown on LiAlO{sub 2} (1 0 0) substrate with a GaN buffer layer by MBE. • A high Zn/O flux ratio is beneficial for reducing the density of screw dislocations. • Reciprocal space maps demonstrate that the misfit strain in ZnO has been relaxed. • No interfacial layer is formed at ZnO/GaN interface using a Zn pre-exposure strategy. - Abstract: C-plane ZnO epilayers were grown on LiAlO{sub 2} (1 0 0) substrate with a GaN buffer layer by plasma assisted molecular beam epitaxy. Both the X-ray rocking curves and the transmission electron microscopy analyses indicate that the ZnO epilayers exhibit a lower threading dislocation density (∼1 × 10{sup 10} cm{sup −2}) as compared to those grown on LiAlO{sub 2} substrate without the buffer layer. A high Zn/O flux ratio is beneficial for reducing the density of screw-type dislocations. Reciprocal space maps demonstrate that the misfit strain has been relaxed. No interfacial layer is formed at the ZnO/GaN interface by using a Zn pre-exposure strategy. The ZnO epilayers exhibit a strong near band edge emission at 3.28 eV at room temperature with a negligible green band emission.

  15. Growth of c-plane ZnO on γ-LiAlO2 (1 0 0) substrate with a GaN buffer layer by plasma assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    Highlights: • ZnO epilayers were grown on LiAlO2 (1 0 0) substrate with a GaN buffer layer by MBE. • A high Zn/O flux ratio is beneficial for reducing the density of screw dislocations. • Reciprocal space maps demonstrate that the misfit strain in ZnO has been relaxed. • No interfacial layer is formed at ZnO/GaN interface using a Zn pre-exposure strategy. - Abstract: C-plane ZnO epilayers were grown on LiAlO2 (1 0 0) substrate with a GaN buffer layer by plasma assisted molecular beam epitaxy. Both the X-ray rocking curves and the transmission electron microscopy analyses indicate that the ZnO epilayers exhibit a lower threading dislocation density (∼1 × 1010 cm−2) as compared to those grown on LiAlO2 substrate without the buffer layer. A high Zn/O flux ratio is beneficial for reducing the density of screw-type dislocations. Reciprocal space maps demonstrate that the misfit strain has been relaxed. No interfacial layer is formed at the ZnO/GaN interface by using a Zn pre-exposure strategy. The ZnO epilayers exhibit a strong near band edge emission at 3.28 eV at room temperature with a negligible green band emission

  16. Microstructure of planar glass substrates modified by Laser Ablation Backwriting (LAB) of metal targets

    International Nuclear Information System (INIS)

    Geometrically controlled, channel-like structures were prepared on commercial, soda-lime glass substrates, by a Laser Ablation Backwriting (LAB) process using a commercial Nd:YVO4 laser fitted with a beam steering galvanometer mirror unit. 70Cu30Zn Brass alloy, Ag and Al metal targets were evaporated onto glass substrates by simple irradiation through the same glass substrates. The resultant structures were characterized by SEM, TEM, and UV-vis-nIR spectroscopy. These revealed the presence of metal nanostructures in the case of brass and Ag targets, with their typical local surface plasmon resonance (LSPR) bands. In contrast, Al was not found in its elemental form, but rather integrated into the glass substrate. These results were confirmed by energy dispersive X-ray microanalysis (EDS) studies, performed with TEM and SEM observation on representative, polished cross section samples. Preliminary light guiding studies demonstrated the potential to develop burried waveguides just below the surface of the glass substrates in all cases, suggesting that LAB may be a convenient method to prepare stable waveguides by modifying inexpensive, commercial window glass.

  17. Sub-surface alloying largely influences graphene nucleation and growth over transition metal substrates.

    Science.gov (United States)

    Zhang, Liying; Zhao, Xingju; Xue, Xinlian; Shi, Jinlei; Li, Chong; Ren, Xiaoyan; Niu, Chunyao; Jia, Yu; Guo, Zhengxiao; Li, Shunfang

    2015-11-11

    Sub-surface alloying (SSA) can be an effective approach to tuning surface functionalities. Focusing on Rh(111) as a typical substrate for graphene nucleation, we show strong modulation by SSA atoms of both the energetics and kinetics of graphene nucleation simulated by first-principles calculations. Counter-intuitively, when the sub-surface atoms are replaced by more active solute metal elements to the left of Rh in the periodic table, such as the early transition metals (TMs), Ru and Tc, the binding between a C atom and the substrate is weakened and two C atoms favor dimerization. Alternatively, when the alloying elements are the late TMs to the right of Rh, such as the relatively inert Pd and Ag, the repulsion between the two C atoms is enhanced. Such distinct results can be well addressed by the delicately modulated activities of the surface host atoms in the framework of the d-band theory. More specifically, we establish a very simple selection rule for optimizing the metal substrate for high quality graphene growth: the introduction of an early (late) solute TM in the SSA lowers (raises) the d-band center and the activity of the top-most host metal atoms, weakening (strengthening) the C-substrate binding, meanwhile both energetically and kinetically facilitating (hindering) the graphene nucleation, and simultaneously promoting (suppressing) the orientation disordering the graphene domains. Importantly, our preliminary theoretical results also show that such a simple rule is also proposed to be operative for graphene growth on the widely invoked Cu(111) catalytic substrate. PMID:26257125

  18. Fabrication and Characterisation of Rutile-TiO2 Coatings on Metallic Alloy Substrates

    Institute of Scientific and Technical Information of China (English)

    Y.Sun,D; D.SivaRamaKrishna

    2004-01-01

    In the present work, attempts have been made to extend the use of the tribological and chemical properties of rutile-TiO2 to metallic alloy systems, by forming a rutile coating on the metallic substrates. Two metallic alloys were selected in this study, including AISI316L austenitic stainless steel and aluminium alloy. The rutile-based coatings were fabricated by magnetron sputter deposition of a pure titanium coating first, and then thermal oxidation of the coated specimens to partially convert the titanium coating to rutile oxide and to promote interracial reactions which can significantly enhance the coating-substrate adhesion strength. The structures and properties of the coating-substrate systems were characterized by a variety of analytical and experimental techniques, including X-ray diffraction, glow discharge spectrometry, high resolution SEM, nanoindentation, microscratch, friction and wear testing, as well as electrochemical testing. The results show that the friction and wear properties, as well as the corrosion resistance of the metallic alloys can be significant enhanced by surface engineering with rutile-TiO2.

  19. Fabrication and Characterisation of Rutile-TiO2 Coatings on Metallic Alloy Substrates

    Institute of Scientific and Technical Information of China (English)

    Y. Sun; D. Siva Rama Krishna

    2004-01-01

    In the present work, attempts have been made to extend the use of the tribological and chemical properties of rutile-TiO2 to metallic alloy systems, by forming a rutile coating on the metallic substrates. Two metallic alloys were selected in this study, including AISI316L austenitic stainless steel and aluminium alloy. The rutile-based coatings were fabricated by magnetron sputter deposition of a pure titanium coating first, and then thermal oxidation of the coated specimens to partially convert the titanium coating to rutile oxide and to promote interfacial reactions which can significantly enhance the coating-substrate adhesion strength. The structures and properties of the coating-substrate systems were characterized by a variety of analytical and experimental techniques, including X-ray diffraction, glow discharge spectrometry, high resolution SEM, nanoindentation, microscratch, friction and wear testing, as well as electrochemical testing. The results show that the friction and wear properties, as well as the corrosion resistance of the metallic alloys can be significant enhanced by surface engineering with rutile-TiO2.

  20. Heteroepitaxial Cu2O thin film solar cell on metallic substrates

    Science.gov (United States)

    Wee, Sung Hun; Huang, Po-Shun; Lee, Jung-Kun; Goyal, Amit

    2015-11-01

    Heteroepitaxial, single-crystal-like Cu2O films on inexpensive, flexible, metallic substrates can potentially be used as absorber layers for fabrication of low-cost, high-performance, non-toxic, earth-abundant solar cells. Here, we report epitaxial growth of Cu2O films on low cost, flexible, textured metallic substrates. Cu2O films were deposited on the metallic templates via pulsed laser deposition under various processing conditions to study the influence of processing parameters on the structural and electronic properties of the films. It is found that pure, epitaxial Cu2O phase without any trace of CuO phase is only formed in a limited deposition window of P(O2) - temperature. The (00l) single-oriented, highly textured, Cu2O films deposited under optimum P(O2) - temperature conditions exhibit excellent electronic properties with carrier mobility in the range of 40-60 cm2 V-1 s-1 and carrier concentration over 1016 cm-3. The power conversion efficiency of 1.65% is demonstrated from a proof-of-concept Cu2O solar cell based on epitaxial Cu2O film prepared on the textured metal substrate.

  1. Transfer-Free Electrical Insulation of Epitaxial Graphene from its Metal Substrate

    DEFF Research Database (Denmark)

    Lizzit, Silvano; Larciprete, Rosanna; Lacovig, Paolo;

    2012-01-01

    High-quality, large-area epitaxial graphene can be grown on metal surfaces, but its transport properties cannot be exploited because the electrical conduction is dominated by the substrate. Here we insulate epitaxial graphene on Ru(0001) by a stepwise intercalation of silicon and oxygen......, and the eventual formation of a SiO2 layer between the graphene and the metal. We follow the reaction steps by X-ray photoemission spectroscopy and demonstrate the electrical insulation using a nanoscale multipoint probe technique....

  2. Long-range surface plasmons in dielectric-metal-dielectric structure with highly anisotropic substrates

    Science.gov (United States)

    Nagaraj; Krokhin, A. A.

    2010-02-01

    We present a theoretical study of long-range surface plasmons propagating in a thin metallic film clad between two identical uniaxial anisotropic dielectric crystals. We show that the proper orientation of the optical axis of the crystal with respect to the metal surface enhances the propagation length of surface plasmons. Since the proper orientation depends on surface plasmon frequency, we give the results for the propagation length in a wide range of frequencies, including the telecommunication region. To increase the role of anisotropy, we consider artificial substrates from photonic crystals, which possess an order of magnitude stronger anisotropy than the natural optical crystals. We propose Kronig-Penney model for plasmonic crystal where the substrate is a periodic sequence of dielectric delta peaks. In this model the dispersion relation for surface plasmon has a band structure where the band width tends to zero when the frequency approaches the resonant frequency.

  3. Perpendicularly magnetized (001)-textured D0{sub 22} MnGa films grown on an (Mg{sub 0.2}Ti{sub 0.8})O buffer with thermally oxidized Si substrates

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Hwachol; Sukegawa, Hiroaki, E-mail: sukegawa.hiroaki@nims.go.jp [National Institute for Materials Science (NIMS), 1-2-1, Sengen, Tsukuba 305-0047 (Japan); Liu, Jun; Mitani, Seiji; Hono, Kazuhiro [National Institute for Materials Science (NIMS), 1-2-1, Sengen, Tsukuba 305-0047 (Japan); Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8577 (Japan)

    2015-10-28

    We report the growth of (001)-textured polycrystalline D0{sub 22} MnGa films with perpendicular magnetic anisotropy (PMA) on thermally oxidized Si substrates using an (Mg{sub 0.2}Ti{sub 0.8})O (MTO) buffer layer. The ordered D0{sub 22} MnGa film grown at the optimum substrate temperature of 530 °C on the MTO buffer layer shows PMA with magnetization of 80 kA/m, PMA energy density of 0.28 MJ/m{sup 3}, and coercivity of 2.3 T. The scanning transmission electron microscope analysis confirms the formation of a highly (001)-textured structure and the elementally sharp interfaces between the MTO layer and the MnGa layer. The achieved D0{sub 22} MnGa PMA films on an amorphous substrate will provide the possible pathway of integration of a Mn-based PMA film into Si-based substrates.

  4. Flexible Metal Oxide/Graphene Oxide Hybrid Neuromorphic Transistors on Flexible Conducting Graphene Substrates.

    Science.gov (United States)

    Wan, Chang Jin; Liu, Yang Hui; Feng, Ping; Wang, Wei; Zhu, Li Qiang; Liu, Zhao Ping; Shi, Yi; Wan, Qing

    2016-07-01

    Flexible metal oxide/graphene oxide hybrid multi-gate neuromorphic transistors are fabricated on flexible conducting graphene substrates. Dendritic integrations in both spatial and temporal modes are emulated, and spatiotemporal correlated logics are obtained. A proof-of-principle visual system model for emulating Lobula Giant Motion Detector neuron is also investigated. The results are of great significance for flexible sensors and neuromorphic cognitive systems. PMID:27159546

  5. Chemical Stripping of ceramic films of titanium aluminum nitride from hard metal substrates

    OpenAIRE

    U. Bardi; D. Bonacchi; Rizzi, G.; Scrivani, A.

    2003-01-01

    We report here the result of a study of different chemical stripping methodologies for ceramic coatings deposited by PVD on hard metal substrates. We show that an approach based on the study of the system by surface science techniques leads to the possibility of developing effective stripping methods as well as guidelines for improving the process. We will report about two methods tested for the stripping of layers of titanium aluminum nitride (TINALOX) deposited by Physical Vapor De...

  6. Recent Developments of Flexible CdTe Solar Cells on Metallic Substrates: Issues and Prospects

    Directory of Open Access Journals (Sweden)

    M. M. Aliyu

    2012-01-01

    Full Text Available This study investigates the key issues in the fabrication of CdTe solar cells on metallic substrates, their trends, and characteristics as well as effects on solar cell performance. Previous research works are reviewed while the successes, potentials, and problems of such technology are highlighted. Flexible solar cells offer several advantages in terms of production, cost, and application over glass-based types. Of all the metals studied as substrates for CdTe solar cells, molybdenum appears the most favorable candidate, while close spaced sublimation (CSS, electrodeposition (ED, magnetic sputtering (MS, and high vacuum thermal evaporation (HVE have been found to be most common deposition technologies used for CdTe on metal foils. The advantages of these techniques include large grain size (CSS, ease of constituent control (ED, high material incorporation (MS, and low temperature process (MS, HVE, ED. These invert-structured thin film CdTe solar cells, like their superstrate counterparts, suffer from problems of poor ohmic contact at the back electrode. Thus similar strategies are applied to minimize this problem. Despite the challenges faced by flexible structures, efficiencies of up to 13.8% and 7.8% have been achieved in superstrate and substrate cell, respectively. Based on these analyses, new strategies have been proposed for obtaining cheaper, more efficient, and viable flexible CdTe solar cells of the future.

  7. Metal particle compaction during drop-substrate impact for inkjet printing and drop-casting processes

    Science.gov (United States)

    Clancy, I.; Amarandei, G.; Nash, C.; Glowacki, B. A.

    2016-02-01

    Direct coating methods using metal particles from aqueous solutions or solvent-based inks become central in the roll-to-roll fabrication processes as these methods can lead to continuous or pre-defined conductive layers on a large variety of substrates. For good electrical conductivity, the metal particles have to be brought into contact, and traditionally, additional sintering treatments are required. Such treatments can degrade the sensitive substrates as paper or polymer films. In this study, the possibility of obtaining conductive layers at room temperature is investigated for direct coating methods with an emphasis on drop-casting and inkjet printing. Thus, it is shown that electrical conductive layers can be achieved if the metal particles can compact during the drop-substrate impact interaction. It is theoretically shown that the compaction process is directly related to the particle and ink drop size, the initial fractional particle loading of the ink, solvent viscosity, and drop velocity. The theoretical predictions on compaction are experimentally validated, and the particle compaction's influence on changes in the electrical conductivity of the resulting layers is demonstrated.

  8. Growth and spectroscopic characterization of monolayer and few-layer hexagonal boron nitride on metal substrates

    Science.gov (United States)

    Feigelson, Boris N.; Bermudez, Victor M.; Hite, Jennifer K.; Robinson, Zachary R.; Wheeler, Virginia D.; Sridhara, Karthik; Hernández, Sandra C.

    2015-02-01

    Atomically thin two dimensional hexagonal boron nitride (2D h-BN) is one of the key materials in the development of new van der Waals heterostructures due to its outstanding properties including an atomically smooth surface, high thermal conductivity, high mechanical strength, chemical inertness and high electrical resistance. The development of 2D h-BN growth is still in the early stages and largely depends on rapid and accurate characterization of the grown monolayer or few layers h-BN films. This paper demonstrates a new approach to characterizing monolayer h-BN films directly on metal substrates by grazing-incidence infrared reflection absorption spectroscopy (IRRAS). Using h-BN films grown by atmospheric-pressure chemical vapor deposition on Cu and Ni substrates, two new sub-bands are found for the A2u out-of-plane stretching mode. It is shown, using both experimental and computational methods, that the lower-energy sub-band is related to 2D h-BN coupled with substrate, while the higher energy sub-band is related to decoupled (or free-standing) 2D h-BN. It is further shown that this newly-observed fine structure in the A2u mode can be used to assess, quickly and easily, the homogeneity of the h-BN-metal interface and the effects of metal surface contamination on adhesion of the layer.

  9. Improved textured La2Zr2O7 buffer layers on bi-axially textured Ni–W substrates using CeO2 seed layers for YBa2Cu3O7−x coated conductors

    International Nuclear Information System (INIS)

    La2Zr2O7 (LZO) buffer layers were deposited on bi-axially textured Ni–W substrates with CeO2 seed layer by radio-frequency magnetron sputtering for the large-scale application of YBa2Cu3O7−x (YBCO) coated conductors. The microstructure and surface morphology of LZO buffer layers were studied by X-ray diffraction, optical microscopy, field emission scanning electron microscopy and atomic force microscopy. The influences of substrate temperature and oxygen partial pressure on the microstructure and surface morphology of LZO buffer layers were discussed. It was found that epitaxial LZO films were preferentially c-axis oriented without microcracks, with no degradation of crystallographic texture and with high surface crystallinity. Crack-free and strong c-axis aligned LZO films with no random orientation were obtained at relatively low substrate temperatures of 600–800 °C and in flowing 40 Pa gas mixtures of Ar–O2 with an effective oxygen partial pressure of 0.1–20 Pa. In addition, LZO films grown in low oxygen partial pressure have a smoother surface than films in higher oxygen partial pressure. Then, we fabricated YBCO coated conductors on the high-quality LZO buffer layers by pulsed laser deposition. The critical current density Jc = 2.25 MA/cm2 and critical current Ic = 180 A/cm of 0.8-μm-thick YBCO film at 77 K, self field were obtained. The magnetic field and angular dependences of critical current per width were discussed. Highly textured LZO films grown on CeO2 seed layer were suitable as a buffer layer for the growth of YBCO coated conductors with high currents. - Highlights: • La2Zr2O7 (LZO) films were firstly fabricated by magnetron sputtering. • We firstly used the buffer architecture LZO/CeO2 (seed). • We firstly fabricated YBa2Cu3O7+x films directly on LZO films

  10. Organic substrates as electron donors in permeable reactive barriers for removal of heavy metals from acid mine drainage.

    Science.gov (United States)

    Kijjanapanich, P; Pakdeerattanamint, K; Lens, P N L; Annachhatre, A P

    2012-12-01

    This research was conducted to select suitable natural organic substrates as potential carbon sources for use as electron donors for biological sulphate reduction in a permeable reactive barrier (PRB). A number of organic substrates were assessed through batch and continuous column experiments under anaerobic conditions with acid mine drainage (AMD) obtained from an abandoned lignite coal mine. To keep the heavy metal concentration at a constant level, the AMD was supplemented with heavy metals whenever necessary. Under anaerobic conditions, sulphate-reducing bacteria (SRB) converted sulphate into sulphide using the organic substrates as electron donors. The sulphide that was generated precipitated heavy metals as metal sulphides. Organic substrates, which yielded the highest sulphate reduction in batch tests, were selected for continuous column experiments which lasted over 200 days. A mixture of pig-farm wastewater treatment sludge, rice husk and coconut husk chips yielded the best heavy metal (Fe, Cu, Zn and Mn) removal efficiencies of over 90%. PMID:23437664

  11. Buffer-layer enhanced crystal growth of BaB{sub 6} (1 0 0) thin films on MgO (1 0 0) substrates by laser molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Kato, Yushi; Yamauchi, Ryosuke; Arai, Hideki; Tan, Geng [Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259-J2-46, Nagatsuta-cho, Midori-ku, Yokohama 226-8503 (Japan); Tsuchimine, Nobuo; Kobayashi, Susumu [Toshima Manufacturing Company Limited, 1414 Shimonomoto, Higashimatsuyama-shi, Saitama 355-0036 (Japan); Saeki, Kazuhiko; Takezawa, Nobutaka [Department of Materials Technology, Industrial Technology Center of Tochigi Prefecture, 367-1 Karinuma, Utsunomiya-shi, Tochigi 321-3224 (Japan); Mitsuhashi, Masahiko; Kaneko, Satoru [Kanagawa Industrial Technology Center, Kanagawa Prefectural Government, 705-1 Shimo-Imaizumi, Ebina, Kanagawa 243-0435 (Japan); Yoshimoto, Mamoru, E-mail: yoshimoto.m.aa@m.titech.ac.jp [Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259-J2-46, Nagatsuta-cho, Midori-ku, Yokohama 226-8503 (Japan); Patent Attorney, Tokyo Institute of Technology, 4259-J2-46, Nagatsuta-cho, Midori-ku, Yokohama 226-8503 (Japan)

    2012-02-01

    Crystalline BaB{sub 6} (1 0 0) thin films can be fabricated on MgO (1 0 0) substrates by inserting a 2-3 nm-thick epitaxial SrB{sub 6} (1 0 0) buffer layer by pulsed laser deposition (PLD) in ultra-high vacuum (i.e., laser molecular beam epitaxy). Reflection high-energy electron diffraction and X-ray diffraction measurements indicated the heteroepitaxial structure of BaB{sub 6} (1 0 0)/SrB{sub 6} (1 0 0)/MgO (1 0 0) with the single domain of the epitaxial relationship. Conversely, BaB{sub 6} thin films without the buffer layer were not epitaxial instead they developed as polycrystalline films with a random in-plane configuration and some impurity phases. As a result, the buffer layer is considered to greatly affect the initial growth of epitaxial BaB{sub 6} thin films; therefore, in this study, buffering effects have been discussed. From the conventional four-probe measurement, it was observed that BaB{sub 6} epitaxial thin films exhibit n-type semiconducting behavior with a resistivity of 2.90 Multiplication-Sign 10{sup -1} {Omega} cm at room temperature.

  12. Growth of epitaxial silicon nanowires on a Si substrate by a metal-catalyst-free process.

    Science.gov (United States)

    Ishiyama, Takeshi; Nakagawa, Shuhei; Wakamatsu, Toshiki

    2016-07-28

    The growth of epitaxial Si nanowires by a metal-catalyst-free process has been investigated as an alternative to the more common metal-catalyzed vapor-liquid-solid process. The well-aligned Si nanowires are successfully grown on a (111)-oriented Si substrate without any metal catalysts by a thermal treatment using silicon sulfide as a Si source at approximately 1200 °C. The needle-shaped Si nanowires, which have a core-shell structure that consists of a single-crystalline Si core along the direction consistent with the substrate direction and a surface coating of silicon oxide, are grown by a metal-catalyst-free process. In this process, the silicon sulfide in the liquid phase facilitates the nucleation and nanowire growth. In contrast, oxygen-rich nanowires that consist of crystalline Si at the tip and lumpy silicon oxide on the body are observed in a sample grown at 1300 °C, which disturbs the epitaxial growth of Si nanowires.

  13. Growth of epitaxial silicon nanowires on a Si substrate by a metal-catalyst-free process

    Science.gov (United States)

    Ishiyama, Takeshi; Nakagawa, Shuhei; Wakamatsu, Toshiki

    2016-07-01

    The growth of epitaxial Si nanowires by a metal-catalyst-free process has been investigated as an alternative to the more common metal-catalyzed vapor–liquid–solid process. The well-aligned Si nanowires are successfully grown on a (111)-oriented Si substrate without any metal catalysts by a thermal treatment using silicon sulfide as a Si source at approximately 1200 °C. The needle-shaped Si nanowires, which have a core–shell structure that consists of a single-crystalline Si core along the direction consistent with the substrate direction and a surface coating of silicon oxide, are grown by a metal-catalyst-free process. In this process, the silicon sulfide in the liquid phase facilitates the nucleation and nanowire growth. In contrast, oxygen-rich nanowires that consist of crystalline Si at the tip and lumpy silicon oxide on the body are observed in a sample grown at 1300 °C, which disturbs the epitaxial growth of Si nanowires.

  14. Ab initio investigations of magnetic properties of ultrathin transition-metal films on 4d substrates

    Energy Technology Data Exchange (ETDEWEB)

    Al-Zubi, Ali

    2010-12-22

    In this thesis, we investigate the magnetic properties of 3d transition-metal monolayers on 4d transition-metal substrates by means of state of the art first-principles quantum theory. In order to reveal the underlying physics of these systems we study trends by performing systematic investigations across the transition-metal series. Case studies are presented for which Rh has been chosen as exemplary 4d substrate. We consider two substrate orientations, a square lattice provided by Rh(001) and a hexagonal lattice provided by Rh(111). We find, all 3d transition-metal (V, Cr, Mn, Fe, Co and Ni) monolayers deposited on the Rh substrate are magnetic and exhibit large local moments which follow Hund's rule with a maximum magnetic moment for Mn of about 3.7 {mu}{sub B} depending on the substrate orientation. The largest induced magnetic moment of about 0.46 {mu}{sub B} is found for Rh atoms adjacent to the Co(001)-film. On Rh(001) we predict a ferromagnetic (FM) ground state for V, Co and Ni, while Cr, Mn and Fe monolayers favor a c(2 x 2) antiferromagnetic (AFM) state, a checkerboard arrangement of up and down magnetic moments. The magnetic anisotropy energies of these ultrathin magnetic films are calculated for the FM and the AFM states. With the exception of V and Cr, the easy axis of the magnetization is predicted to be in the film plane. With the exception of Fe, analogous results are obtained for the 3d-metal monolayers on Rh(111). For Fe on Rh(111) a novel magnetic ground state is predicted, a double-row-wise antiferromagnetic state along the [11 anti 2] direction, a sequence of ferromagnetic double-rows of atoms, whose magnetic moments couple antiferromagnetically from double row to double row. The magnetic structure can be understood as superposition of a left- and right-rotating flat spin spiral. In a second set of case studies the properties of an Fe monolayer deposited on varies hexagonally terminated hcp (0001) and fcc (111) surfaces of 4d

  15. Selective synthesis of double helices of carbon nanotube bundles grown on treated metallic substrates

    Energy Technology Data Exchange (ETDEWEB)

    Cervantes-Sodi, Felipe; Iniguez-Rabago, Agustin; Rosas-Melendez, Samuel; Ballesteros-Villarreal, Monica [Departamento de Fisica y Matematicas, Universidad Iberoamericana, Prolongacion Paseo de la Reforma 880, Lomas de Santa Fe (Mexico); Vilatela, Juan J. [IMDEA Materials Institute, E.T.S. de Ingenieros de Caminos, Madrid (Spain); Reyes-Gutierrez, Lucio G.; Jimenez-Rodriguez, Jose A. [Ingenieria Industrial, Grupo JUMEX, Ecatepec de Morelos, Estado de Mexico (Mexico); Palacios, Eduardo [Lab. de Microscopia Electronica de Ultra Alta Resolucion, Instituto Mexicano del Petroleo, San Bartolo Atepehuacan (Mexico); Terrones, Mauricio [Department of Physics, Department of Materials Science and Engineering and Materials Research Institute, Pennsylvania State University, University Park, PA (United States); Research Center for Exotic Nanocarbons (JST), Shinshu University, Nagano (Japan)

    2012-12-15

    Double-helix microstructures consisting of two parallel strands of hundreds of multi-walled carbon nanotubes (MWCNTs) have been synthesized by chemical vapour deposition of ferrocene/toluene vapours on metal substrates. Growth of coiled carbon nanostructures with site selectivity is achieved by varying the duration of thermochemical pretreatment to deposit a layer of SiO{sub x} on the metallic substrate. Production of multibranched structures of MWCNTs converging in SiO{sub x} microstructure is also reported. In the abstract figure, panel (a) shows a coloured micrograph of a typical double-helix coiled microstructure of MWCNTs grown on SiO{sub x} covered steel substrate. Green and blue show each of the two individual strands of MWCNTs. Panel (b) is an amplification of a SiO{sub x} microparticle (white) on the tip of the double-stranded coil (green and blue). The microparticle guides the collective growth of hundreds of MWCNTs to form the coiled structure. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  16. Direct observation of small cluster mobility and ripening. [during annealing of metal films on amorphous substrates

    Science.gov (United States)

    Heinemann, K.; Poppa, H.

    1975-01-01

    Direct evidence is reported for the simultaneous occurrence of Ostwald ripening and short-distance cluster mobility during annealing of discontinuous metal films on clean amorphous substrates. The annealing characteristics of very thin particulate deposits of silver on amorphized clean surfaces of single crystalline thin graphite substrates were studied by in-situ transmission electron microscopy (TEM) under controlled environmental conditions (residual gas pressure of 10 to the minus 9th power torr) in the temperature range from 25 to 450 C. Sputter cleaning of the substrate surface, metal deposition, and annealing were monitored by TEM observation. Pseudostereographic presentation of micrographs in different annealing stages, the observation of the annealing behavior at cast shadow edges, and measurements with an electronic image analyzing system were employed to aid the visual perception and the analysis of changes in deposit structure recorded during annealing. Slow Ostwald ripening was found to occur in the entire temperature range, but the overriding surface transport mechanism was short-distance cluster mobility.

  17. Layered transition metal dichalcogenides: promising near-lattice-matched substrates for GaN growth.

    Science.gov (United States)

    Gupta, Priti; Rahman, A A; Subramanian, Shruti; Gupta, Shalini; Thamizhavel, Arumugam; Orlova, Tatyana; Rouvimov, Sergei; Vishwanath, Suresh; Protasenko, Vladimir; Laskar, Masihhur R; Xing, Huili Grace; Jena, Debdeep; Bhattacharya, Arnab

    2016-01-01

    Most III-nitride semiconductors are grown on non-lattice-matched substrates like sapphire or silicon due to the extreme difficulty of obtaining a native GaN substrate. We show that several layered transition-metal dichalcogenides are closely lattice-matched to GaN and report the growth of GaN on a range of such layered materials. We report detailed studies of the growth of GaN on mechanically-exfoliated flakes WS2 and MoS2 by metalorganic vapour phase epitaxy. Structural and optical characterization show that strain-free, single-crystal islands of GaN are obtained on the underlying chalcogenide flakes. We obtain strong near-band-edge emission from these layers, and analyse their temperature-dependent photoluminescence properties. We also report a proof-of-concept demonstration of large-area growth of GaN on CVD MoS2. Our results show that the transition-metal dichalcogenides can serve as novel near-lattice-matched substrates for nitride growth.

  18. Protein-associated water and secondary structure effect removal of blood proteins from metallic substrates.

    Science.gov (United States)

    Anand, Gaurav; Zhang, Fuming; Linhardt, Robert J; Belfort, Georges

    2011-03-01

    Removing adsorbed protein from metals has significant health and industrial consequences. There are numerous protein-adsorption studies using model self-assembled monolayers or polymeric substrates but hardly any high-resolution measurements of adsorption and removal of proteins on industrially relevant transition metals. Surgeons and ship owners desire clean metal surfaces to reduce transmission of disease via surgical instruments and minimize surface fouling (to reduce friction and corrosion), respectively. A major finding of this work is that, besides hydrophobic interaction adhesion energy, water content in an adsorbed protein layer and secondary structure of proteins determined the access and hence ability to remove adsorbed proteins from metal surfaces with a strong alkaline-surfactant solution (NaOH and 5 mg/mL SDS in PBS at pH 11). This is demonstrated with three blood proteins (bovine serum albumin, immunoglobulin, and fibrinogen) and four transition metal substrates and stainless steel (platinum (Pt), gold (Au), tungsten (W), titanium (Ti), and 316 grade stainless steel (SS)). All the metallic substrates were checked for chemical contaminations like carbon and sulfur and were characterized using X-ray photoelectron spectroscopy (XPS). While Pt and Au surfaces were oxide-free (fairly inert elements), W, Ti, and SS substrates were associated with native oxide. Difference measurements between a quartz crystal microbalance with dissipation (QCM-D) and surface plasmon resonance spectroscopy (SPR) provided a measure of the water content in the protein-adsorbed layers. Hydrophobic adhesion forces, obtained with atomic force microscopy, between the proteins and the metals correlated with the amount of the adsorbed protein-water complex. Thus, the amount of protein adsorbed decreased with Pt, Au, W, Ti and SS, in this order. Neither sessile contact angle nor surface roughness of the metal substrates was useful as predictors here. All three globular proteins

  19. Protein-associated water and secondary structure effect removal of blood proteins from metallic substrates.

    Science.gov (United States)

    Anand, Gaurav; Zhang, Fuming; Linhardt, Robert J; Belfort, Georges

    2011-03-01

    Removing adsorbed protein from metals has significant health and industrial consequences. There are numerous protein-adsorption studies using model self-assembled monolayers or polymeric substrates but hardly any high-resolution measurements of adsorption and removal of proteins on industrially relevant transition metals. Surgeons and ship owners desire clean metal surfaces to reduce transmission of disease via surgical instruments and minimize surface fouling (to reduce friction and corrosion), respectively. A major finding of this work is that, besides hydrophobic interaction adhesion energy, water content in an adsorbed protein layer and secondary structure of proteins determined the access and hence ability to remove adsorbed proteins from metal surfaces with a strong alkaline-surfactant solution (NaOH and 5 mg/mL SDS in PBS at pH 11). This is demonstrated with three blood proteins (bovine serum albumin, immunoglobulin, and fibrinogen) and four transition metal substrates and stainless steel (platinum (Pt), gold (Au), tungsten (W), titanium (Ti), and 316 grade stainless steel (SS)). All the metallic substrates were checked for chemical contaminations like carbon and sulfur and were characterized using X-ray photoelectron spectroscopy (XPS). While Pt and Au surfaces were oxide-free (fairly inert elements), W, Ti, and SS substrates were associated with native oxide. Difference measurements between a quartz crystal microbalance with dissipation (QCM-D) and surface plasmon resonance spectroscopy (SPR) provided a measure of the water content in the protein-adsorbed layers. Hydrophobic adhesion forces, obtained with atomic force microscopy, between the proteins and the metals correlated with the amount of the adsorbed protein-water complex. Thus, the amount of protein adsorbed decreased with Pt, Au, W, Ti and SS, in this order. Neither sessile contact angle nor surface roughness of the metal substrates was useful as predictors here. All three globular proteins

  20. Controlling Electronic and Geometrical Structure of Honeycomb-Lattice Materials Supported on Metal Substrates : Graphene and Hexagonal Boron Nitride

    OpenAIRE

    Vinogradov, Nikolay

    2013-01-01

    The present thesis is focused on various methods of controlling electronic and geometrical structure of two-dimensional overlayers adsorbed on metal surfaces exemplified by graphene and hexagonal boron nitride (h-BN) grown on transition metal (TM) substrates. Combining synchrotron-radiation-based spectroscopic and various microscopic techniques with in situ sample preparation, we are able to trace the evolution of overlayer electronic and geometrical properties in overlayer/substrate systems,...

  1. Role of metallic substrate on the plasmon modes in double-layer graphene structures

    Science.gov (United States)

    Cruz, G. Gonzalez de la

    2015-07-01

    Novel heterostructures combining different layered materials offer new opportunities for applications and fundamental studies of collective excitations driven by interlayer Coulomb interactions. In this work, we have investigated the influence of the metallic-like substrate on the plasmon spectrum of a double layer graphene system and a structure consisting of conventional two-dimensional electron gas (2DEG) immersed in a semiconductor quantum well and a graphene sheet with an interlayer separation of d. Long-range Coulomb interactions between substrate and graphene layered systems lead a new set of spectrum plasmons. At long wavelengths (q→0) the acoustic modes (ω~q) depend, besides on the carrier density in each layer, on the distance between the first carrier layer and the substrate in both structures. Furthermore, in the relativistic/nonrelativistic layered structure an undamped acoustic mode emerges for a certain interlayer critical distance dc. On the other hand, the optical plasmon modes emerging from the coupling of the double-layer systems and the substrate, both start at finite frequency at q=0 in contrast to the collective excitation spectrum ω~q1/2 reported in the literature for double-layer graphene structures.

  2. High-density metallic nanogaps fabricated on solid substrates used for surface enhanced Raman scattering.

    Science.gov (United States)

    Lu, Gang; Li, Hai; Wu, Shixin; Chen, Peng; Zhang, Hua

    2012-02-01

    The Raman signal of adsorbed molecules can be significantly enhanced by utilizing metallic structures with high-density Raman hot spots used as surface enhanced Raman scattering (SERS) substrates. In this work, we develop a simple, convenient and tunable method to fabricate high-density Ag or Au nanogaps on Si wafers. These nanogaps can serve as Raman hot spots, leading to dramatic enhancement of the Raman signal. The high-density nanogaps can be formed by repeating the electroless deposition of Ag NPs (or Au NPs) and coating of p-aminothiophenol (PATP, a Raman probe) on the deposited Ag NPs (or Au NPs) through the self-assembly process. After removal of PATP by O(2) plasma, the as-fabricated SERS substrate can be reused for the detection of other molecules. PMID:22159183

  3. Semiconductor- to metallic-like behavior in Bi thin films on KCl substrate

    Science.gov (United States)

    Bui, Thanh Nhan; Raskin, Jean-Pierre; Hackens, Benoit

    2016-04-01

    Bi thin films, with a thickness of 100 nm, are deposited by electron-beam evaporation on a freshly cleaved (100) KCl substrate. The substrate temperature during film growth (Tdep) ranges from room temperature up to 170 °C. Films deposited at room temperature exhibit a maze-like microstructure typical of the rhombohedral (110) texture, as confirmed by X-ray diffraction. For Tdep above 80 °C, a different microstructure appears, characterized by concentric triangular shapes corresponding to the trigonal (111) texture. Temperature dependence of the resistivity shows a transition from a semiconductor-like behavior for films deposited at room temperature to a metallic-like behavior for Tdep above 80 °C. From magnetoresistance measurements between room temperature and 1.6 K, we extract the electron and hole mobilities, concentrations, and mean free paths, which allow to draw a complete picture of the transport properties of both types of films.

  4. Application of hybrid organic/inorganic polymers as coatings on metallic substrates

    Science.gov (United States)

    Augustinho, T. R.; Motz, G.; Ihlow, S.; Machado, R. A. F.

    2016-09-01

    Acrylic polymers, particularly poly (methyl methacrylate) (PMMA), have certain specific properties, such as good film formation, transparency, and good mechanical properties, which have been widely used in paints, coatings and adhesives. However, the limited chemical and physical stability of these pure polymers limits their applications when exposed to hostile conditions, as in ship hulls, for example. A suitable way to enhance PMMA properties is the addition of silicon polymers with very good protective characteristics. In this study, a PMMA and HTT 1800 (commercial silazane) copolymer were applied on metallic substrate and compared to pure PMMA and HTT 1800. All the materials were applied as coatings. They were applied on stainless steel via dip-coating to investigate the coating properties. Thermal cycling was employed to analyze coating durability at high temperatures (50 °C to 600 °C). Optical microscopy (OM) and scanning electron microscopy (SEM) were used to characterize the coated surfaces, and the adhesion of pure PMMA, pure HTT 1800 and PMMA/HTT 1800 coatings on metallic substrate was investigated by Cross-Cut-Test (ASTM D 3359). The sessile drop method was used to determine the contact angle. PMMA coatings presented complete degradation from 250 °C, while hybrid coatings of PMMA and HTT 1800 have good protection until 400 °C. The adherence of the coating on metallic substrate showed improvement in all synthesized materials when compared to pure PMMA, obtaining the best adherence possible. The contact angle test showed that the hydrophobicity of the hybrid coatings is higher than that of the pure coatings.

  5. Solution processable broadband transparent mixed metal oxide nanofilm optical coatings via substrate diffusion doping.

    Science.gov (United States)

    Glynn, Colm; Aureau, Damien; Collins, Gillian; O'Hanlon, Sally; Etcheberry, Arnaud; O'Dwyer, Colm

    2015-12-21

    Devices composed of transparent materials, particularly those utilizing metal oxides, are of significant interest due to increased demand from industry for higher fidelity transparent thin film transistors, photovoltaics and a myriad of other optoelectronic devices and optics that require more cost-effective and simplified processing techniques for functional oxides and coatings. Here, we report a facile solution processed technique for the formation of a transparent thin film through an inter-diffusion process involving substrate dopant species at a range of low annealing temperatures compatible with processing conditions required by many state-of-the-art devices. The inter-diffusion process facilitates the movement of Si, Na and O species from the substrate into the as-deposited vanadium oxide thin film forming a composite fully transparent V0.0352O0.547Si0.4078Na0.01. Thin film X-ray diffraction and Raman scattering spectroscopy show the crystalline component of the structure to be α-NaVO3 within a glassy matrix. This optical coating exhibits high broadband transparency, exceeding 90-97% absolute transmission across the UV-to-NIR spectral range, while having low roughness and free of surface defects and pinholes. The production of transparent films for advanced optoelectronic devices, optical coatings, and low- or high-k oxides is important for planar or complex shaped optics or surfaces. It provides opportunities for doping metal oxides to ternary, quaternary or other mixed metal oxides on glass, encapsulants or other substrates that facilitate diffusional movement of dopant species. PMID:26575987

  6. Picosecond Laser Machining of Metallic and Polymer Substrates for Fluidic Driven Self-Alignment

    Science.gov (United States)

    Römer, G. R. B. E.; Cerro, D. Arnaldo Del; Pohl, R.; Chang, B.; Liimatainen, V.; Zhou, Q.; Veld, A. J. Huis In `t.

    Fluidic self-alignment of micro-components relies on creating a receptor site that is able to confine a liquid droplet. When a micro-component is brought in contact with the droplet, capillary forces move the component to its final position. A method to stop the advancing of a liquid from a receptor site, consists of creating geometrical features, such as edges around the site. A picosecond pulsed laser source was used to create suitable edges in a metallic and a polyimide substrate. Subsequently, the self-alignment capabilities of these sites were tested. The receptor sites in polyimide showed the highest success rate.

  7. Picosecond Laser Machining of Metallic and Polymer Substrates for Fluidic Driven Self-Alignment

    OpenAIRE

    Römer, G.R.B.E.; Cerro, D. Arnaldo Del; Pohl, R.; Chang, B.; Liimatainen, V.; Q. Zhou; Veld, A.J. Huis In ‘t

    2012-01-01

    Fluidic self-alignment of micro-components relies on creating a receptor site that is able to confine a liquid droplet. When a micro-component is brought in contact with the droplet, capillary forces move the component to its final position. A method to stop the advancing of a liquid from a receptor site, consists of creating geometrical features, such as edges around the site. A picosecond pulsed laser source was used to create suitable edges in a metallic and a polyimide substrate. Subseque...

  8. The copper spoil heap Knappenberg, Austria, as a model for metal habitats - Vegetation, substrate and contamination.

    Science.gov (United States)

    Adlassnig, Wolfram; Weiss, Yasmin S; Sassmann, Stefan; Steinhauser, Georg; Hofhansl, Florian; Baumann, Nils; Lichtscheidl, Irene K; Lang, Ingeborg

    2016-09-01

    Historic mining in the Eastern Alps has left us with a legacy of numerous spoil heaps hosting specific, metal tolerant vegetation. Such habitats are characterized by elevated concentrations of toxic elements but also by high irradiation, a poorly developed substrate or extreme pH of the soil. This study investigates the distribution of vascular plants, mosses and lichens on a copper spoil heap on the ore bearing Knappenberg formed by Prebichl Layers and Werfener Schist in Lower Austria. It serves as a model for discriminating between various ecological traits and their effects on vegetation. Five distinct clusters were distinguished: (1) The bare, metal rich Central Spoil Heap was only colonised by highly resistant specialists. (2) The Northern and (3) Southern Peripheries contained less copper; the contrasting vegetation was best explained by the different microclimate. (4) A forest over acidic bedrock hosted a vegetation overlapping with the periphery of the spoil heap. (5) A forest over calcareous bedrock was similar to the spoil heap with regard to pH and humus content but hosted a vegetation differing strongly to all other habitats. Among the multiple toxic elements at the spoil heap, only Cu seems to exert a crucial influence on the vegetation pattern. Besides metal concentrations, irradiation, humidity, humus, pH and grain size distribution are important for the establishment of a metal tolerant vegetation. The difference between the species poor Northern and the diverse Southern Periphery can be explained by the microclimate rather than by the substrate. All plant species penetrating from the forest into the periphery of the spoil heap originate from the acidic but not from the calcareous bedrock. PMID:27185350

  9. Characterization of a strongly textured non-ferromagnetic Cu-33 at%Ni substrate coated with a CeO2 buffer layer

    DEFF Research Database (Denmark)

    Tian, Hui; Suo, H.L.; Yue, Zhao;

    2013-01-01

    The microstructure, crystallographic texture and magnetic properties have been studied in a Cu-33 at%Ni substrate produced by cold rolling to a reduction of ~99% with subsequent annealing at 1000 C for 1 h in a protective atmosphere. This treatment results in a strongly textured material, where t...... deposited on the Cu-33 at%Ni substrate using dip-coating. © 2013 Elsevier B.V....

  10. Stretching-tunable metal gratings fabricated on an elastomeric substrate using a water-soluble sacrificial layer

    Science.gov (United States)

    Gu, Ronghua; Ji, Min; Xuan, Yan; Cui, Yushuang; Yuan, Changsheng; Li, Wen-Di; Ge, Haixiong; Chen, Yanfeng

    2015-11-01

    We report a new method to fabricate stretching-tunable metal gratings on elastomeric substrates by combining nanoimprint lithography and metal transfer using a patterned sacrificial layer. Fabrication of metal lines with a period of 550 nm and a linewidth of 270 nm was demonstrated on polydimethylsiloxane (PDMS) membranes using this process. Optical diffraction characterization was used to measure the period of stretched gratings on the PDMS membrane and demonstrates tuning of the grating period by deforming the carrying PDMS substrate. The pattern transfer process using a water-soluble sacrificial layer can also be applied to fabrication of other deformable micro- and nano-devices.

  11. Long-range wetting transparency on top of layered metal-dielectric substrates

    Science.gov (United States)

    Noginov, M. A.; Barnakov, Yuri A.; Liberman, Vladimir; Prayakarao, Srujana; Bonner, Carl E.; Narimanov, Evgenii E.

    2016-06-01

    It has been recently shown that scores of physical and chemical phenomena (including spontaneous emission, scattering and Förster energy transfer) can be controlled by nonlocal dielectric environments provided by metamaterials with hyperbolic dispersion and simpler metal/dielectric structures. At this time, we have researched van der Waals interactions and experimentally studied wetting of several metallic, dielectric and composite multilayered substrates. We have found that the wetting angle of water on top of MgF2 is highly sensitive to the thickness of the MgF2 layer and the nature of the underlying substrate that could be positioned as far as ~100 nm beneath the water/MgF2 interface. We refer to this phenomenon as long range wetting transparency. The latter effect cannot be described in terms of the most basic model of dispersion van der Waals-London forces based on pair-wise summation of dipole-dipole interactions across an interface or a gap separating the two media. We infer that the experimentally observed gradual change of the wetting angle with increase of the thickness of the MgF2 layer can possibly be explained by the distance dependence of the Hamaker function (describing the strength of interaction), which originates from retardation of electromagnetic waves at the distances comparable to a wavelength.

  12. Nanotribological properties of water films adsorbing atop, and absorbing below, graphene layers supported by metal substrates

    Science.gov (United States)

    Liu, Zijian; Curtis, C. K.; Stine, R.; Sheehan, P.; Krim, J.

    The tribological properties of graphite, a common lubricant with known sensitivity to the presence of water, have been studied extensively at the macroscopic and microscopic scales. Although far less attention has been devoted to the tribological properties of graphene, it has been established that the tribological response to the presence of water is dissimilar from that of graphite. We report here a quartz crystal microbalance study of the nanotribological properties of water films adsorbed/absorbed on graphene layers prepared by either chemical decomposition on nickel(111) substrates or transfer of freestanding graphene layers to aluminum substrates. Sliding friction levels of the water films were also measured for metal surfaces in the absence of a graphene layer. We observe very high friction levels for water adsorbed atop graphene on Ni(111) and very low levels for water on aluminum. For the case of graphene/aluminum, the data indicate that the water is absorbing between the graphene layer and the aluminum. Dissipation levels moreover indicate the presence of an interstitial water increases sliding friction between the graphene and the aluminum substrate Work supported by NSF and NRL.

  13. Active vacuum brazing of CNT films to metal substrates for superior electron field emission performance

    Science.gov (United States)

    Longtin, Rémi; Sanchez-Valencia, Juan Ramon; Shorubalko, Ivan; Furrer, Roman; Hack, Erwin; Elsener, Hansrudolf; Gröning, Oliver; Greenwood, Paul; Rupesinghe, Nalin; Teo, Kenneth; Leinenbach, Christian; Gröning, Pierangelo

    2015-02-01

    The joining of macroscopic films of vertically aligned multiwalled carbon nanotubes (CNTs) to titanium substrates is demonstrated by active vacuum brazing at 820 °C with a Ag-Cu-Ti alloy and at 880 °C with a Cu-Sn-Ti-Zr alloy. The brazing methodology was elaborated in order to enable the production of highly electrically and thermally conductive CNT/metal substrate contacts. The interfacial electrical resistances of the joints were measured to be as low as 0.35 Ω. The improved interfacial transport properties in the brazed films lead to superior electron field-emission properties when compared to the as-grown films. An emission current of 150 μA was drawn from the brazed nanotubes at an applied electric field of 0.6 V μm-1. The improvement in electron field-emission is mainly attributed to the reduction of the contact resistance between the nanotubes and the substrate. The joints have high re-melting temperatures up to the solidus temperatures of the alloys; far greater than what is achievable with standard solders, thus expanding the application potential of CNT films to high-current and high-power applications where substantial frictional or resistive heating is expected.

  14. Solution-Processed Self-Assembled Nanodielectrics on Template-Stripped Metal Substrates.

    Science.gov (United States)

    McMorrow, Julian J; Walker, Amanda R; Sangwan, Vinod K; Jariwala, Deep; Hoffman, Emily; Everaerts, Ken; Facchetti, Antonio; Hersam, Mark C; Marks, Tobin J

    2015-12-01

    The coupling of hybrid organic-inorganic gate dielectrics with emergent unconventional semiconductors has yielded transistor devices exhibiting record-setting transport properties. However, extensive electronic transport measurements on these high-capacitance systems are often convoluted with the electronic response of the semiconducting silicon substrate. In this report, we demonstrate the growth of solution-processed zirconia self-assembled nanodielectrics (Zr-SAND) on template-stripped aluminum substrates. The resulting Zr-SAND on Al structures leverage the ultrasmooth (r.m.s. roughness <0.4 nm), chemically uniform nature of template-stripped metal substrates to demonstrate the same exceptional electronic uniformity (capacitance ∼700 nF cm(-2), leakage current <1 μA cm(-2) at -2 MV cm(-1)) and multilayer growth of Zr-SAND on Si, while exhibiting superior temperature and voltage capacitance responses. These results are important to conduct detailed transport measurements in emergent transistor technologies featuring SAND as well as for future applications in integrated circuits or flexible electronics.

  15. Evaluation and Characterization of Plasma Sprayed Cu Slag-Al Composite Coatings on Metal Substrates

    Directory of Open Access Journals (Sweden)

    S. Mantry

    2013-01-01

    Full Text Available Copper slag is a waste product obtained during matte smelting and refining of copper. The present work explores the coating potential of copper slag by plasma spraying. This work shows that copper slag is eminently coatable. An attempt has been made in the present investigation to use the composites coatings of copper slag and Al powder in suitable combination on aluminium and mild steel substrates in order to improve the surface properties of these ductile metal-alloy substrates. When premixed with Al powder, the coating exhibits higher interfacial adhesion as compared to pure copper slag coatings. Maximum adhesion strengths of about 23 MPa and 21 MPa are recorded for the coatings of copper slag with 15 wt% of Al on aluminium and mild steel substrates, respectively. The input power to the plasma torch is found to affect the coating deposition efficiency and morphology of the coatings. It also suggests value addition of an industrial waste.

  16. Polyacrylonitrile/noble metal/SiO₂ nanofibers as substrates for the amplified detection of picomolar amounts of metal ions through plasmon-enhanced fluorescence.

    Science.gov (United States)

    Zhang, Han; Cao, Minhua; Wu, Wei; Xu, Haibo; Cheng, Si; Fan, Li-Juan

    2015-01-28

    Electrospun polymer/noble metal hybrid nanofibers have developed rapidly as surface-enhanced Raman scattering (SERS)-active substrates over the last few years. However, polymer/noble metal nanofibers with plasmon-enhanced fluorescence (PEF) activity have received no attention to date. Herein, we show a general and facile approach for the preparation of polyacrylonitrile (PAN)/noble metal/SiO2 nanofibrous mats with PEF activity for the first time by combining electrospinning and controlled silica coatings. These PEF-active nanofibrous mats can selectively improve the fluorescence intensity of conjugated polyelectrolytes (CPEs). Importantly, the CPE solution in the presence of a PAN/noble metal/SiO2 nanofibrous mat showed dramatic fluorescence quenching towards picomolar (pM) amounts of heavy metal ions, while the fluorescence of the CPE solution without the nanofibrous mat had no apparent quenching towards micromolar (μM) amounts of metal ions. The combination of the distance-dependent fluorescence enhancement performance of metal NPs and the ionic characteristics of the CPE solution makes the polymer/noble metal nanofibers promising substrates for greatly improving the detection sensitivity towards metal ions. We believe that this work provides a general strategy for preparing plasmon band-tuned PEF-active substrates with advantages including good selectivity, remarkable sensitivity and recyclability, which make them a preferable choice for practical sensing applications. PMID:25494487

  17. Back contact to film silicon on metal for photovoltaic cells

    Science.gov (United States)

    Branz, Howard M.; Teplin, Charles; Stradins, Pauls

    2013-06-18

    A crystal oriented metal back contact for solar cells is disclosed herein. In one embodiment, a photovoltaic device and methods for making the photovoltaic device are disclosed. The photovoltaic device includes a metal substrate with a crystalline orientation and a heteroepitaxial crystal silicon layer having the same crystal orientation of the metal substrate. A heteroepitaxial buffer layer having the crystal orientation of the metal substrate is positioned between the substrate and the crystal silicon layer to reduce diffusion of metal from the metal foil into the crystal silicon layer and provide chemical compatibility with the heteroepitaxial crystal silicon layer. Additionally, the buffer layer includes one or more electrically conductive pathways to electrically couple the crystal silicon layer and the metal substrate.

  18. Effect of a dielectric substrate with a subwavelength thickness on light diffraction by rectangular hole arrays on metallic film

    Energy Technology Data Exchange (ETDEWEB)

    Park, D. J.; Jeong, M. S. [Sungkyunkwan University, Suwon (Korea, Republic of); Choi, S. B. [Incheon National University, Incheon (Korea, Republic of)

    2014-11-15

    A theoretical study of the effect of ultrathin dielectric substrate in THz wave diffraction phenomena on a subwavelength nanostructured system is conducted. The proposed system is composed of a dielectric substrate with a thickness of ∼ λ/1000 and a subwavelength-scaled rectangular hole array on a metal thin film in THz wavelength region. A modified Rayleigh diffraction theory has been developed to take into account the contribution of reflection at the air-substrate interface. A calculation of the terahertz transmission while varying the thickness shows that the effect of a thin dielectric substrate starts to vanish when the thickness becomes ∼1/100 of the incident light's wavelength. Theoretically, the results are well explained because most electric fields are confined near the rectangular aperture, which results in the dominant existence of the field inside the thin substrate. Additionally, the effect of a thin dispersive substrate is discussed.

  19. Nanoscale “Quantum” Islands on Metal Substrates: Microscopy Studies and Electronic Structure Analyses

    Directory of Open Access Journals (Sweden)

    Da-Jiang Liu

    2010-07-01

    Full Text Available Confinement of electrons can occur in metal islands or in continuous films grown heteroepitaxially upon a substrate of a different metal or on a metallic alloy. Associated quantum size effects (QSE can produce a significant height-dependence of the surface free energy for nanoscale thicknesses of up to 10–20 layers. This may suffice to induce height selection during film growth. Scanning STM analysis has revealed remarkable flat-topped or mesa-like island and film morphologies in various systems. We discuss in detail observations of QSE and associated film growth behavior for Pb/Cu(111, Ag/Fe(100, and Cu/fcc-Fe/Cu(100 [A/B or A/B/A], and for Ag/NiAl(110 with brief comments offered for Fe/Cu3Au(001 [A/BC binary alloys]. We also describe these issues for Ag/5-fold i-Al-Pd-Mn and Bi/5-fold i-Al-Cu-Fe [A/BCD ternary icosohedral quasicrystals]. Electronic structure theory analysis, either at the level of simple free electron gas models or more sophisticated Density Functional Theory calculations, can provide insight into the QSE-mediated thermodynamic driving force underlying height selection.

  20. Mechanical strength and tribological behavior of ion-beam deposited boron nitride films on non-metallic substrates

    International Nuclear Information System (INIS)

    An investigation was conducted to examine the mechanical strength and tribological properties of boron nitride (BN) films ion-beam deposited on silicon (Si), fused silica (SiO2), gallium arsenide (GaAs), and indium phosphide (InP) substrates in sliding contact with a diamond pin under a load. The results of the investigation indicate that BN films on nonmetallic substrates, like metal films on metallic substrates, deform elastically and plastically in the interfacial region when in contact with a diamond pin. However, unlike metal films and substrates, BN films on nonmetallic substrates can fracture when they are critically loaded. Not only does the yield pressure (hardness) of Si and SiO2 substrates increase by a factor of 2 in the presence of a BN film, but the critical load needed to fracture increases as well. The presence of films on the brittle substrates can arrest crack formation. The BN film reduces adhesion and friction in the sliding contact. BN adheres to Si and SiO2 and forms a good quality film, while it adheres poorly to GaAs and InP. The interfacial adhesive strengths were 1 GPa for a BN film on Si and appreciably higher than 1 GPa for a BN film on SiO2

  1. Corrosion resistance of Ni-50Cr HVOF coatings on 310S alloy substrates in a metal dusting atmosphere

    Energy Technology Data Exchange (ETDEWEB)

    Saaedi, J. [Centre for Advanced Coating Technologies, Department of Materials Science and Engineering, University of Toronto, 184 College Street, Toronto, Ontario M5S 3E4 (Canada); Department of Materials and Metallurgical Engineering, Iran University of Science and Technology, Tehran (Iran, Islamic Republic of); Arabi, H.; Mirdamadi, S.; Ghorbani, H. [Department of Materials and Metallurgical Engineering, Iran University of Science and Technology, Tehran (Iran, Islamic Republic of); Coyle, T.W. [Centre for Advanced Coating Technologies, Department of Materials Science and Engineering, University of Toronto, 184 College Street, Toronto, Ontario M5S 3E4 (Canada)

    2011-09-15

    Metal dusting attack has been examined after three 168 h cycles on two Ni-50Cr coatings with different microstructures deposited on 310S alloy substrates by the high velocity oxy-fuel (HVOF) thermal-spray process. Metal dusting in uncoated 310S alloy specimens was found to be still in the initiation stage after 504 h of exposure in the 50H{sub 2}:50CO gas environment at 620 C. Dense Ni-50Cr coatings offered suitable resistance to metal dusting. Metal dusting was observed in the 310S substrates adjacent to pores at the interface between the substrate and a porous Ni-50Cr coating. The porosity present in the as-deposited coatings was shown to introduce a large variability into coating performance. Carbon formed by decomposition of the gaseous species accumulated in the surface pores and resulted in the dislodgement of surface splats due to stresses generated by the volume changes. When the corrosive gas atmosphere was able to penetrate through the interconnected pores and reach the coating-substrate interface, the 310S substrate was carburized, metal dusting attack occurred, and the resulting formation of coke in the pores led to local failure of the coating. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  2. Modification of opto-electronic properties of ZnO by incorporating metallic tin for buffer layer in thin film solar cells

    International Nuclear Information System (INIS)

    In this report, the effect of incorporation of metallic tin (Sn) on opto-electronic properties of ZnO thin films is presented. ZnO thin films were deposited through ‘automated chemical spray pyrolysis’ (CSP) technique; later different quantities of ‘Sn’ were evaporated on it and subsequently annealed. Vacuum annealing showed a positive effect on crystallinity of films. Creation of sub band gap levels due to ‘Sn’ diffusion was evident from the absorption and PL spectra. The tin incorporated films showed good photo response in visible region. Tin incorporated ZnO thin films seem to satisfy the desirable criteria for buffer layer in thin film solar cells

  3. Modification of opto-electronic properties of ZnO by incorporating metallic tin for buffer layer in thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Deepu, D. R.; Jubimol, J.; Kartha, C. Sudha; Louis, Godfrey; Vijayakumar, K. P., E-mail: kpv@cusat.ac.in [Department of Physics, Cochin University of Science and Technology, Cochin-682022 (India); Kumar, K. Rajeev [Department of Instrumentation, Cochin University of Science and Technology, Cochin-682022 (India)

    2015-06-24

    In this report, the effect of incorporation of metallic tin (Sn) on opto-electronic properties of ZnO thin films is presented. ZnO thin films were deposited through ‘automated chemical spray pyrolysis’ (CSP) technique; later different quantities of ‘Sn’ were evaporated on it and subsequently annealed. Vacuum annealing showed a positive effect on crystallinity of films. Creation of sub band gap levels due to ‘Sn’ diffusion was evident from the absorption and PL spectra. The tin incorporated films showed good photo response in visible region. Tin incorporated ZnO thin films seem to satisfy the desirable criteria for buffer layer in thin film solar cells.

  4. Composition-dependent electrical properties of (Pb, La)(Zr, Sn, Ti)O3 antiferroelectric thin films grown on platinum-buffered silicon substrates

    International Nuclear Information System (INIS)

    (Pb, La)(Zr, Sn, Ti)O3 (PLZST) antiferroelectric (AFE) thin films with different compositions were deposited on Pt-buffered silicon wafers by the sol-gel process. The phase structure and the surface morphology of the PLZST AFE thin films were analysed by XRD and SEM, respectively. The electric field induced AFE-to-ferroelectric (AFE-FE) phase transformation behaviour of the PLZST thin films was examined by polarization versus field (P-E) and relative permittivity versus field (εr-E) measurements, with emphasis placed on composition-dependent phase switching field. The phase switching current was investigated as a function of a gradually changed dc electric field. Furthermore, the effect of the composition of the PLZST thin films on the Curie temperature (Tc) was also studied in detail

  5. Adhesion strength and nucleation thermodynamics of four metals (Al, Cu, Ti, Zr) on AlN substrates

    Science.gov (United States)

    Tao, Yuan; Ke, Genshui; Xie, Yan; Chen, Yigang; Shi, Siqi; Guo, Haibo

    2015-12-01

    Devices based on AlN generally require adherent and strong interfaces between AlN and other materials, whereas most metals are known to be nonwetting to AlN and form relatively weak interfaces with AlN. In this study, we selected four representative metals (Al, Cu, Ti, and Zr) to study the adhesion strength of the AlN/metal interfaces. Mathematical models were constructed between the adhesion strength and enthalpy of formation of Al-metal solid solutions, the surface energies of the metals, and the lattice mismatch between the metals and AlN, based on thermodynamic parameters calculated using density functional theory. It appears that the adhesion strength is mainly determined by the lattice mismatch, and is in no linear correlation with either the Al-metal solution's formation enthalpies or the metals' surface energies. We also investigated the nucleation thermodynamics of the four metals on AlN substrates. It was found that Ti forms the strongest interface with AlN, and has the largest driving force for nucleation on AlN substrates among the four metals.

  6. Transparent binary-thickness coatings on metal substrates that produce binary patterns of orthogonal elliptical polarization states in reflected light

    Science.gov (United States)

    Azzam, Rasheed M. A.; Angel, Wade W.

    1992-12-01

    A reflective division-of-wavefront polarizing beam splitter is described that uses a dual- thickness transparent thin-film coating on a metal substrate. A previous design that used a partially clad substrate at the principal angle of the metal [Azzam, JOSA A 5, 1576 (1988)] is replaced by a more general one in which the substrate is coated throughout and the film thickness alternates between two non-zero levels. The incident linear polarization azimuth is chosen near, but not restricted to, 45 degree(s) (measured from the plane of incidence), and the angle of incidence may be selected over a range of values. The design procedure, which uses the two-dimensional Newton-Raphson method, is applied to the SiO2-Au film- substrate system at 633 nm wavelength, as an example, and the characteristics of the various possible coatings are presented.

  7. Integrated pinning centers in YBa2Cu3Ox thick films on single-crystalline and textured metal substrates

    International Nuclear Information System (INIS)

    The second-generation coated tapes of high temperature superconductors (HTS) deposited on textured metal substrates strongly rely on the introduction of extended nano-defects in order to enhance their critical current. A proven effective way to introduce such defects is growing BaZrO3 (BZO) nano-rods and an alternative way is to generate HTS columnar growth using nanoparticles of noble metals. Here we report the combination of these methods. It allows achieving controlled pinning and high critical current in YBa2Cu3Ox films deposited on single crystal substrates and significantly improves critical current in coated conductors deposited on rolling-assisted biaxially-textured metal substrates (RABiTS). The superconducting properties of thick (up to 5 micron) conductors are analysed using DC-magnetisation, AC-susceptibility and angle-dependent transport measurements. TEM imaging is used to confirm the presence of extended defects in the tapes.

  8. Al-Si-Mn Alloy Coating on Aluminum Substrate Using Cold Metal Transfer (CMT) Welding Technique

    Science.gov (United States)

    Rajeev, G. P.; Kamaraj, M.; Bakshi, S. R.

    2014-06-01

    The cold metal transfer (CMT) process was explored as a weld overlay technique for synthesizing Al-Si-Mn alloy coating on a commercially pure Al plate. The effect of welding speed on the bead geometry, deposition rate, and the dilution were studied and the best parameter was used to synthesize the coatings. The CMT process can be used to produce thick coatings (>2.5 mm) without porosity and with low dilution levels. The Vickers hardness number of the Al substrate increased from 28 in the bulk to 57 in the coating. It is suggested that the CMT process can be an effective and energy-efficient technique for depositing thick coatings and is useful in weld repair of aluminum alloy components.

  9. Deposition and STM characterization of luminescent organic molecules on metal substrates

    International Nuclear Information System (INIS)

    The porphyrin-based molecules including H2TBPP, ZnTBPP and PtTBPP as well as the perinone derivatives (PD) molecules were deposited on Au(100), Au(111) and Cu(100) substrates in the form of single molecule, molecular line, submonolayer, monolayer and multilayer. The features of the performed molecular nanostructures were characterized by an ultrahigh vacuum scanning tunneling microscopy (STM) at room temperature. The observed molecular topographies matched very well with the molecule structures in spite of the fact that the molecular adsorption states were influenced by different metal surface. STM-induced photon emission was generated from the surface of H2TBPP multilayer structures on Au(100) in tunneling junction when the applied bias exceeds the 'turn-on' voltages ∼- 1.6 V or + 1.3 V at 0.5 nA

  10. Analysis of the Micromachining Process of Dielectric and Metallic Substrates Immersed in Water with Femtosecond Pulses

    Directory of Open Access Journals (Sweden)

    Simas Butkus

    2015-12-01

    Full Text Available Micromachining of 1 mm thick dielectric and metallic substrates was conducted using femtosecond pulse generated filaments in water. Several hundred microjoule energy pulses were focused within a water layer covering the samples. Within this water layer, non-linear self-action mechanisms transform the beam, which enables higher quality and throughput micromachining results compared to focusing in air. Evidence of beam transformation into multiple light filaments is presented along with theoretical modeling results. In addition, multiparametric optimization of the fabrication process was performed using statistical methods and certain acquired dependencies are further explained and tested using laser shadowgraphy. We demonstrate that this micromachining process exhibits complicated dynamics within the water layer, which are influenced by the chosen parameters.

  11. Aluminum clad ferritic stainless steel foil for metallic catalytic converter substrate applications

    Energy Technology Data Exchange (ETDEWEB)

    Chang, C.S.; Pandey, A.; Jha, B.

    1996-09-01

    A roll bonding process was developed to produce Al clad ferritic stainless steel foil for the metallic catalytic converter substrate application. Clad foils with different chemistry were produced and their properties were evaluated. Heat treatment conditions for the homogenization of clad foils were identified. This article includes results from oxidation tests and mechanical tests on as-rolled and heat treated clad foil. Results from commercial ingot metallurgy foil were also included for comparison. The oxidation weight gain study indicates that the Al content in the foils is directly related to the usable life of the foil. However, rare earth addition is necessary to improve the oxidation resistance of this material for the high temperature applications by slowing down the weight gain kinetics and thus extend the usable life of foils. The heat treated clad foil also exhibit excellent tensile ductility when compared to the ingot metallurgy foil.

  12. Composite anodes based on nanotube titanium oxide from electro-oxidation of Ti metal substrate

    Science.gov (United States)

    Pozio, A.; Carewska, M.; Mura, F.; D'Amato, R.; Falconieri, M.; De Francesco, M.; Appetecchi, G. B.

    2014-02-01

    In this manuscript is reported an investigation on lithium-ion battery composite anodes based on nanotube titanium oxide active material obtained from electrochemical oxidation of titanium metal substrates. Nanotube TiO2 showed a good nominal capacity, particularly taking into account that no electronic conductive additive as well as no binder was incorporated into the TiO2 material. The performance of nanotube titanium oxide anode tapes was compared with that of electrodes based on TiO2 both commercially available and obtained from laser pyrolysis. Cycling tests have indicated that the anodes based on electrosynthesized nanotube TiO2 exhibit the best performance in terms of capacity values and rate capability in combination with very good capacity retention and coulombic efficiency leveling 100% even at high rates.

  13. Electrodeposition of metallic tungsten coating from binary oxide molten salt on low activation steel substrate

    International Nuclear Information System (INIS)

    Tungsten is considered a promising plasma facing armor material for future fusion devices. An electrodeposited metallic tungsten coating from Na2WO4–WO3 binary oxide molten salt on low activation steel (LAS) substrate was investigated in this paper. Tungsten coatings were deposited under various pulsed currents conditions at 1173 K in atmosphere. Cathodic current density and pulsed duty cycle were investigated for pulsed current electrolysis. The crystal structure and microstructure of tungsten coatings were characterized by X-ray diffractometry, scanning electron microscopy, and energy X-ray dispersive analysis techniques. The results indicated that pulsed current density and duty cycle significantly influence tungsten nucleation and electro-crystallization phenomena. The average grain size of the coating becomes much larger with increasing cathodic current density, which demonstrates that appropriate high cathodic current density can accelerate the growth of grains on the surface of the substrate. The micro-hardness of tungsten coatings increases with the increasing thickness of coatings; the maximum micro-hardness is 482 HV. The prepared tungsten coatings have a smooth surface, a porosity of less than 1%, and an oxygen content of 0.024 wt%

  14. Performance Characteristics of Bio-Inspired Metal Nanostructures as Surface-Enhanced Raman Scattered (SERS) Substrates.

    Science.gov (United States)

    Areizaga-Martinez, Hector I; Kravchenko, Ivan; Lavrik, Nickolay V; Sepaniak, Michael J; Hernández-Rivera, Samuel P; De Jesús, Marco A

    2016-09-01

    The fabrication of high-performance plasmonic nanomaterials for bio-sensing and trace chemical detection is a field of intense theoretical and experimental research. The use of metal-silicon nanopillar arrays as analytical sensors has been reported with reasonable results in recent years. The use of bio-inspired nanocomposite structures that follow the Fibonacci numerical architecture offers the opportunity to develop nanostructures with theoretically higher and more reproducible plasmonic fields over extended areas. The work presented here describes the nanofabrication process for a series of 40 µm × 40 µm bio-inspired arrays classified as asymmetric fractals (sunflower seeds and romanesco broccoli), bilaterally symmetric (acacia leaves and honeycombs), and radially symmetric (such as orchids and lily flowers) using electron beam lithography. In addition, analytical capabilities were evaluated using surface-enhanced Raman scattering (SERS). The substrate characterization and SERS performance of the developed substrates as the strategies to assess the design performance are presented and discussed. PMID:27566257

  15. Buffer layers for coated conductors

    Science.gov (United States)

    Stan, Liliana; Jia, Quanxi; Foltyn, Stephen R.

    2011-08-23

    A composite structure is provided including a base substrate, an IBAD oriented material upon the base substrate, and a cubic metal oxide material selected from the group consisting of rare earth zirconates and rare earth hafnates upon the IBAD oriented material. Additionally, an article is provided including a base substrate, an IBAD oriented material upon the base substrate, a cubic metal oxide material selected from the group consisting of rare earth zirconates and rare earth hafnates upon the IBAD oriented material, and a thick film upon the cubic metal oxide material. Finally, a superconducting article is provided including a base substrate, an IBAD oriented material upon the base substrate, a cubic metal oxide material selected from the group consisting of rare earth zirconates and rare earth hafnates upon the IBAD oriented material, and an yttrium barium copper oxide material upon the cubic metal oxide material.

  16. Radio frequency surface resistance of Tl-Ba-Ca-Cu-O films on metal and single-crystal substrates

    Science.gov (United States)

    Arendt, P. N.; Reeves, G. A.; Elliott, N. E.; Cooke, D. W.; Gray, E. R.; Houlton, R. J.; Brown, D. R.

    1990-01-01

    Films of Tl-Ba-Ca-Cu were dc magnetron sputtered from a single multielement target. The films were deposited onto substrates of: (1) magnesium oxide, (2) a silver based alloy (Consil 995), (3) a nickel based alloy (Haynes 230), and (4) buffer layers of barium fluoride or copper oxide on Consil. To form superconducting phases, post-deposition anneals were made on these films using an alumina crucible with an over pressure of thallium and flowing oxygen. After annealing, the film phases were determined using x-ray diffraction. The film surface resistances (Rs) were measured at 22 GHz in a TE011 cavity.

  17. Epitaxial growth of Sc{sub 2}O{sub 3} films on Gd{sub 2}O{sub 3}-buffered Si substrates by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Paulraj, Joseph; Wang, Rongping; Sellars, Matthew; Luther-Davies, Barry [Australian National University, Laser Physics Centre, Research School of Physics and Engineering, Acton, Canberra, ACT (Australia)

    2016-04-15

    We investigated the optimal conditions to prepare high-quality Sc{sub 2}O{sub 3} films on Gd{sub 2}O{sub 3}-buffered Si wafers using pulsed laser deposition technique with an aim at developing waveguide devices that can transform the performance of the gradient echo quantum memory based on bulk crystals. Under the optimal conditions, only oxide and Si (2 2 2) peaks appeared in the X-ray diffraction pattern. The Sc{sub 2}O{sub 3} (2 2 2) diffraction peak was located at 2θ=31.5 with a full width at half maxima (FWHM) of 0.16 , and its rocking curve had a FWHM of 0.10 . In-plane epitaxial relationship was confirmed by X-ray pole figure where Sc{sub 2}O{sub 3} (1 1 1) was parallel to Si (1 1 1). High-resolution TEM images indicated clear interfaces and perfect lattice images with sharp electron diffraction dots. All these results confirm that the oxide films on Si were single crystalline with high quality. (orig.)

  18. Semiconductor films on flexible iridium substrates

    Science.gov (United States)

    Goyal, Amit

    2005-03-29

    A laminate semiconductor article includes a flexible substrate, an optional biaxially textured oxide buffer system on the flexible substrate, a biaxially textured Ir-based buffer layer on the substrate or the buffer system, and an epitaxial layer of a semiconductor. Ir can serve as a substrate with an epitaxial layer of a semiconductor thereon.

  19. Growth of InGaN films on c-plane sapphire substrates with an AlN nucleation layer by using metal-organic chemical-vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Dang-Hui [Xidian University, Xi' an (China); Xi' an Shiyou University, Xi' an (China); Xu, Sheng-Rui; Zhang, Jin-Cheng; Chen, Ke; Bi, Zhi-Wei; Zhang, Lin-Xia; Meng, Fan-Na; Ai, Shan; Hao, Yue [Xidian University, Xi' an (China)

    2012-08-15

    In this study, we report on the crystal quality of InGaN epifilms with different indium fractions grown at different growth temperatures on c-plane sapphire substrates with an AlN nucleation layer by using low-pressure metal-organic chemical-vapor deposition (MOCVD). High-resolution X-ray diffraction (HRXRD), atom force microscopy (AFM), photoluminescence (PL) and Raman scattering measurements were employed to study the crystal quality, optical properties and strain condition of InGaN epifilms with increasing indium fraction (from 4.36% to 15.36%). Results show that InGaN epitaxial layers can be realized with a higher indium fraction at a lower temperature by inserting an AlN nucleation layer between the sapphire substrate and the GaN buffer layer and that the obtained InGaN epifilms have an improved crystal quality and a lower threading dislocation density.

  20. Crack-free micromachining on glass substrates by visible LIBWE using liquid metallic absorbers

    International Nuclear Information System (INIS)

    Laser induced backside wet etching (LIBWE) is a promising laser direct-write technique for etching transparent materials and for producing high precision and near-optical quality surfaces. In this study, visible LIBWE using gallium and eutectic indium/gallium as absorbers was used for crack-free microfabrication of sodalime and quartz. Eutectic indium/gallium (In/Ga) has a melting temperature lower than metallic gallium does and the etching rate by using In/Ga was found to be similar to that by gallium for visible LIBWE. When using the gallium absorber, the etching threshold of quartz by visible LIBWE was about one-third of that by UV LIBWE. The heat-affected zone of the quartz etching was negligible at the trench rim in the visible LIBWE process. The wettability of the metallic absorbers on the substrates affects aspect ratio and is a new important factor for LIBWE. In addition, etching rate decreased when repetition rate was increased.

  1. Metal nanoparticle-doped coloured films on glass and polycarbonate substrates

    Indian Academy of Sciences (India)

    S K Medda; M Mitra; S De; S Pal; G De

    2005-11-01

    In a program on the development of metal (e.g. Au, Ag, Cu and their alloy) nanoparticles in sol{gel derived films, attempts were made to synthesize different coloured coatings on glasses and plastics. The absorption position of surface plasmon resonance (SPR) band arising from the embedded metal nanoparticles was tailored by controlling the refractive index of the matrix for the development of different colours. Thus different coloured (pink to blue) coatings on ordinary sheet glasses were prepared by generating Au nanoparticles in mixed SiO2-TiO2 matrices having refractive index values ranging from about 1.41 to 1.93. In another development, in situ generation of Ag nanoparticles in the inorganic{organic hybrid host leads to the formation of different abrasion resistant coloured coatings (yellow to pink) on polycarbonate substrates after curing. As expected, the SPR peak of Ag or Au is gradually red-shifted due to the increase of refractive index of the coating matrices causing a systematic change of colour.

  2. Influence of buffer-layer construction and substrate orientation on the electron mobilities in metamorphic In0.70Al0.30As/In0.76Ga0.24As/In0.70Al0.30As structures on GaAs substrates

    International Nuclear Information System (INIS)

    The influence of construction of the buffer layer and misorientation of the substrate on the electrical properties of In0.70Al0.30As/In0.76Ga0.24As/In0.70Al0.30As quantum wells on a GaAs substrate is studied. The temperature dependences (in the temperature range of 4.2 K < T < 300 K) and field dependences (in magnetic fields as high as 6 T) of the sample resistances are measured. Anisotropy of the resistances in different crystallographic directions is detected; this anisotropy depends on the substrate orientation and construction of the metamorphic buffer layer. In addition, the Hall effect and the Shubnikov–de Haas effect are studied. The Shubnikov–de Haas effect is used to determine the mobilities of electrons separately in several occupied dimensionally quantized subbands in different crystallographic directions. The calculated anisotropy of mobilities is in agreement with experimental data on the anisotropy of the resistances

  3. CONTROLLED GROWTH OF CARBON NANOTUBES ON CONDUCTIVE METAL SUBSTRATES FOR ENERGY STORAGE APPLICATIONS

    Energy Technology Data Exchange (ETDEWEB)

    Brown, P.; Engtrakul, C.

    2009-01-01

    The impressive mechanical and electronic properties of carbon nanotubes (CNTs) make them ideally suited for use in a variety of nanostructured devices, especially in the realm of energy production and storage. In particular, vertically-aligned CNT “forests” have been the focus of increasing investigation for use in supercapacitor electrodes and as hydrogen adsorption substrates. Vertically-aligned CNT growth was attempted on metal substrates by waterassisted chemical vapor deposition (CVD). CNT growth was catalyzed by iron-molybdenum (FeMo) nanoparticle catalysts synthesized by a colloidal method, which were then spin-coated onto Inconel® foils. The substrates were loaded into a custom-built CVD apparatus, where CNT growth was initiated by heating the substrates to 750 °C under the fl ow of He, H2, C2H4 and a controlled amount of water vapor. The resultant CNTs were characterized by a variety of methods including Raman spectroscopy, transmission electron microscopy (TEM) and scanning electron microscopy (SEM), and the growth parameters were varied in an attempt to optimize the purity and growth yield of the CNTs. The surface area and hydrogen adsorption characteristics of the CNTs were quantifi ed by the Brunauer- Emmett-Teller (BET) and Sieverts methods, and their capacitance was measured via cyclic voltammetry. While vertically-aligned CNT growth could not be verifi ed, TEM and SEM analysis indicated that CNT growth was still obtained, resulting in multiwalled CNTs of a wide range in diameter along with some amorphous carbon impurities. These microscopy fi ndings were reinforced by Raman spectroscopy, which resulted in a G/D ratio ranging from 1.5 to 3 across different samples, suggestive of multiwalled CNTs. Changes in gas fl ow rates and water concentration during CNT growth were not found to have a discernable effect on the purity of the CNTs. The specifi c capacitance of a CNT/FeMo/Inconel® electrode was found to be 3.2 F/g, and the BET surface area of

  4. 具有SiC缓冲层的Si衬底上直接沉积碳原子生长石墨烯%Direct Graphene Growth by Depositing Carbon Atoms on Si Substrate Covered by SiC Buffer Layers

    Institute of Scientific and Technical Information of China (English)

    唐军; 康朝阳; 李利民; 徐彭寿

    2011-01-01

    石墨烯是近年发现的一种新型多功能材料.在合适的衬底上制备石墨烯成为目前材料制备的一大挑战.本文利用分子束外延(MBE)设备,在Si 衬底上生长高质量的SiC 缓冲层,然后利用直接沉积C原子的方法生长石墨烯,并通过反射式高能电子衍射(RHEED)、拉曼(Raman)光谱和近边X 射线吸收精细结构谱(NEXAFS)等实验技术对不同衬底温度(800、900、1000、1100 °C)生长的薄膜进行结构表征.实验结果表明,在以上衬底温度下都能生长出具有乱层堆垛结构的石墨烯薄膜.当衬底温度升高时,碳原子的活性增强,其成键的能力也增大,从而使形成的石墨烯结晶质量提高.衬底温度为1000 °C时结晶质量最好.其原因可能是当衬底温度较低时,碳原子活性太低不足以形成有序的六方C-sp2环.但过高的衬底温度会使SiC 缓冲层的孔洞缺陷增加,衬底的Si 原子有可能获得足够的能量穿过SiC薄膜的孔洞扩散到衬底表面,与沉积的碳原子反应生成无序的SiC,这一方面会减弱石墨烯的生长,另一方面也会使石墨烯的结晶质量变差.%Graphene is a newly discovered material with many functions. The preparation of graphene on suitable substrates is a challenge in the material preparation field. In this paper, graphene thin films were grown on Si substrates covered with SiC buffer layers (SiC/Si) by the direct deposition of carbon atoms using molecular beam epitaxy (MBE) equipment. The structural properties of the samples produced at different substrate temperatures (800, 900, 1000, 1100 ° C) were investigated by reflection high energy electron diffraction (RHEED), Raman spectroscopy and near-edge X-ray absorption fine structure (NEXAFS). The results indicate that the thin films grown at all temperatures exhibit the characteristics of graphene with a turbostratic stacking structure. As the substrate temperature increases the crystalline quality of the graphene

  5. Investigation of CeO2 Buffer Layer Effects on the Voltage Response of YBCO Transition-Edge Bolometers

    DEFF Research Database (Denmark)

    Mohajeri, Roya; Nazifi, Rana; Wulff, Anders Christian;

    2016-01-01

    The effect on the thermal parameters of superconducting transition-edge bolometers produced on a single crystalline SrTiO3 (STO) substrate with and without a CeO2 buffer layer was investigated. Metal-organic deposition was used to deposit the 20-nm CeO2 buffer layer, whereas RF magnetron sputtering...... responses, and the results were compared with that of simulations conducted by applying a one-dimensional thermophysical model. It was observed that adding the buffer layer to the structure of the bolometer results in an increased response at higher modulation frequencies. Results from simulations made...

  6. Polyacrylonitrile/noble metal/SiO2 nanofibers as substrates for the amplified detection of picomolar amounts of metal ions through plasmon-enhanced fluorescence

    Science.gov (United States)

    Zhang, Han; Cao, Minhua; Wu, Wei; Xu, Haibo; Cheng, Si; Fan, Li-Juan

    2015-01-01

    Electrospun polymer/noble metal hybrid nanofibers have developed rapidly as surface-enhanced Raman scattering (SERS)-active substrates over the last few years. However, polymer/noble metal nanofibers with plasmon-enhanced fluorescence (PEF) activity have received no attention to date. Herein, we show a general and facile approach for the preparation of polyacrylonitrile (PAN)/noble metal/SiO2 nanofibrous mats with PEF activity for the first time by combining electrospinning and controlled silica coatings. These PEF-active nanofibrous mats can selectively improve the fluorescence intensity of conjugated polyelectrolytes (CPEs). Importantly, the CPE solution in the presence of a PAN/noble metal/SiO2 nanofibrous mat showed dramatic fluorescence quenching towards picomolar (pM) amounts of heavy metal ions, while the fluorescence of the CPE solution without the nanofibrous mat had no apparent quenching towards micromolar (μM) amounts of metal ions. The combination of the distance-dependent fluorescence enhancement performance of metal NPs and the ionic characteristics of the CPE solution makes the polymer/noble metal nanofibers promising substrates for greatly improving the detection sensitivity towards metal ions. We believe that this work provides a general strategy for preparing plasmon band-tuned PEF-active substrates with advantages including good selectivity, remarkable sensitivity and recyclability, which make them a preferable choice for practical sensing applications.Electrospun polymer/noble metal hybrid nanofibers have developed rapidly as surface-enhanced Raman scattering (SERS)-active substrates over the last few years. However, polymer/noble metal nanofibers with plasmon-enhanced fluorescence (PEF) activity have received no attention to date. Herein, we show a general and facile approach for the preparation of polyacrylonitrile (PAN)/noble metal/SiO2 nanofibrous mats with PEF activity for the first time by combining electrospinning and controlled silica

  7. Substrate Structures For Growth Of Highly Oriented And/Or Epitaxial Layers Thereon

    Energy Technology Data Exchange (ETDEWEB)

    Arendt, Paul N. (Los Alamos, NM); Foltyn, Stephen R. (Los Alamos, NM); Groves, James R. (Los Alamos, NM); Jia, Quanxi (Los Alamos, NM)

    2005-07-26

    A composite substrate structure including a substrate, a layer of a crystalline metal oxide or crystalline metal oxynitride material upon the substrate, a layer of an oriented cubic oxide material having a rock-salt-like structure upon the crystalline metal oxide or crystalline metal oxynitride material layer is provided together with additional layers such as one or more layers of a buffer material upon the oriented cubic oxide material layer. Jc's of 2.3×106 A/cm2 have been demonstrated with projected Ic's of 320 Amperes across a sample 1 cm wide for a superconducting article including a flexible polycrystalline metallic substrate, an inert oxide material layer upon the surface of the flexible polycrystalline metallic substrate, a layer of a crystalline metal oxide or crystalline metal oxynitride material upon the layer of the inert oxide material, a layer of an oriented cubic oxide material having a rock-salt-like structure upon the crystalline metal oxide or crystalline metal oxynitride material layer, a layer of a buffer material upon the oriented cubic oxide material layer, and, a top-layer of a high temperature superconducting material upon the layer of a buffer material.

  8. Recent advances and perspectives in analytical methodologies for monitoring the bioavailability of trace metals in environmental solid substrates

    DEFF Research Database (Denmark)

    Miró, Manuel; Hansen, Elo Harald

    2006-01-01

    In the last decades, researchers have realised that the impact of trace elements (TE) in environmental solid substrates on ecological systems and biota cannot be ascertained appropriately by means of total metal content measurements. Assessment of TE chemical forms, types of binding and reactivity...

  9. Microtransfer printing of metal ink patterns onto plastic substrates utilizing an adhesion-controlled polymeric donor layer

    Science.gov (United States)

    Park, Ji-Sub; Choi, Jun-Chan; Park, Min-Kyu; Bae, Jeong Min; Bae, Jin-Hyuk; Kim, Hak-Rin

    2016-06-01

    We propose a method for transfer-printed electrode patterns onto flexible/plastic substrates, specifically intended for metal ink that requires a high sintering temperature. Typically, metal-ink-based electrodes cannot be picked up for microtransfer printing because the adhesion between the electrodes and the donor substrate greatly increases after the sintering process due to the binding materials. We introduced a polymeric donor layer between the printed electrodes and the donor substrate and effectively reduced the adhesion between the Ag pattern and the polymeric donor layer by controlling the interfacial contact area. After completing a wet-etching process for the polymeric donor layer, we obtained Ag patterns supported on the fine polymeric anchor structures; the Ag patterns could be picked up onto the stamp surface even after the sintering process by utilizing the viscoelastic properties of the elastomeric stamp with a pick-up velocity control. The proposed method enables highly conductive metal-ink-based electrode patterns to be applied on thermally weak plastic substrates via an all-solution process. Metal electrodes transferred onto a film showed superior electrical and mechanical stability under the bending stress test required for use in printed flexible electronics.

  10. The effect of substrate orientation on the kinetics and thermodynamics of initial oxide-film growth on metals

    Energy Technology Data Exchange (ETDEWEB)

    Reichel, Friederike

    2007-11-19

    This thesis addresses the effect of the parent metal-substrate orientation on the thermodynamics and kinetics of ultra-thin oxide-film growth on bare metals upon their exposure to oxygen gas at low temperatures (up to 650 K). A model description has been developed to predict the thermodynamically stable microstructure of a thin oxide film grown on its bare metal substrate as function of the oxidation conditions and the substrate orientation. For Mg and Ni, the critical oxide-film thickness is less than 1 oxide monolayer and therefore the initial development of an amorphous oxide phase on these metal substrates is unlikely. Finally, for Cu and densely packed Cr and Fe metal surfaces, oxide overgrowth is predicted to proceed by the direct formation and growth of a crystalline oxide phase. Further, polished Al single-crystals with {l_brace}111{r_brace}, {l_brace}100{r_brace} and {l_brace}110{r_brace} surface orientations were introduced in an ultra-high vacuum system for specimen processing and analysis. After surface cleaning and annealing, the bare Al substrates have been oxidized by exposure to pure oxygen gas. During the oxidation, the oxide-film growth kinetics has been established by real-time in-situ spectroscopic ellipsometry. After the oxidation, the oxide-film microstructures were investigated by angle-resolved X-ray photoelectron spectroscopy and low energy electron diffraction. Finally, high-resolution transmission electron microscopic analysis was applied to study the microstructure and morphology of the grown oxide films on an atomic scale. (orig.)

  11. Efficient multiband absorber based on 1D periodic metal-dielectric photonic crystals with a reflective substrate

    CERN Document Server

    Cui, Yanxia; He, Yingran; Hao, Yuying; Lin, Yinyue; Tian, Ximin; Xu, Ju; Ji, Ting; He, Sailing; Fang, Nicholas X

    2013-01-01

    We propose an efficient multiband absorber comprising a truncated one-dimensional periodic metal-dielectric photonic crystal and a reflective substrate. The reflective substrate is actually an optically thick metallic film. Such a planar device is easier to fabricate compared with the absorbers with complicated shapes. For a 4-unit cell device, all of the four absorption peaks can be optimized with efficiencies higher than 95%. Moreover, those absorption peaks are insensitive to both polarization and incident angle. The influences of the geometrical parameters along with the refractive index of the dielectric on the device performance are discussed as well. Furthermore, it is found that the number of absorption peaks within each photonic band exactly corresponds to the number of the unit cells because the truncated photonic crystal lattices have the function of selecting resonant modes. It is also displayed that the total absorption efficiency gradually increases when there are more metal-dielectric unit cell...

  12. Effects of the annealing duration of the ZnO buffer layer on structural and optical properties of ZnO rods grown by a hydrothermal process

    International Nuclear Information System (INIS)

    In this study, the effects of the annealing duration of a zinc oxide (ZnO) buffer layer on structural and optical properties of ZnO rods grown by a hydrothermal process are discussed. A ZnO buffer layer was deposited on p-type Si (1 1 1) substrates by the metal organic chemical vapor deposition (MOCVD) method. After that, ZnO rods were grown on the ZnO-buffer/Si (1 1 1) substrate by a hydrothermal process. In order to determine the optimum annealing duration of the buffer layer for the growth of ZnO rods, durations ranging from 0.5 to 30 min were tried. The morphology and crystal structure of the ZnO/ZnO-buffer/Si (1 1 1) were measured by field emission scanning electron microscopy (FE-SEM) and x-ray diffraction (XRD). The optical properties were investigated by photoluminescence (PL) measurement.

  13. Self-heating technique of metallic substrate for reel-to-reel and double-sided deposition of YBa{sub 2}Cu{sub 3}O{sub 7-δ} films

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Fei; Zhao, Ruipeng; Xue, Yan; He, Yuanying; Zhang, Pan; Tao, Bowan; Xiong, Jie; Li, Yanrong [University of Electronic Science and Technology of China, State Key Laboratory of Electronic Thin Film and Integrated Devices, Chengdu (China); Wang, Hui [Chinese Academy of Sciences, Applied Research Laboratory of Superconduction and New Material, Institute of Electrical Engineering, Beijing (China)

    2016-02-15

    A new, simple, and highly efficient heating technology for metal tape substrates is proposed and applied to reel-to-reel and double-sided film deposition. In this technology, direct electrical current (I{sub DC}) is conducted into the metal layer of oxide-buffered metal substrate to induce heat. Different substrate surface temperatures were achieved by varying I{sub DC} from 22 to 25 A. At these temperatures, a series of 1-μm-thick and 5-cm-long YBa{sub 2}Cu{sub 3}O{sub 7-δ} (YBCO) films were fabricated on ion-beam-assisted deposition (IBAD) templates through metal organic chemical vapor deposition. X-ray diffraction analysis on the samples revealed that the YBCO film changed its growth mode from mixed a-axis and c-axis to purely c-axis with increasing I{sub DC}. The optimal out-of-plane and in-plane texture reached ∝1.4 and 3.5 , respectively. A 30-m-long and 500-nm-thick single-sided YBCO-coated conductor was also prepared through reel-to-reel deposition using the proposed heating method. The fabricated conductor presented homogeneous crystallization and texture and exhibited a critical current density at self-field and 77 K (J{sub c} {sub 77K,} {sub 0T}) of 2.8-3.2 MA/cm{sup 2}. Moreover, 500-nm-thick YBCO films were fabricated simultaneously on both sides of the double-sided IBAD template. The two sides of films demonstrated uniform texture and J{sub c} {sub 77K,} {sub 0T} of 3.2 MA/cm{sup 2}. Results demonstrated that the proposed substrate heating technology can be used for reel-to-reel and double-sided deposition of YBCO-coated conductors. (orig.)

  14. Relative humidity sensing using dye-doped polymer thin-films on metal substrates

    Science.gov (United States)

    Kumari, Madhuri; Ding, Boyang; Blaikie, Richard

    2015-12-01

    We demonstrate humidity sensors based on optical resonances sustained in sub-wavelength thick dye-doped polymer coatings on reflecting surfaces. As a result of coupling between dye molecular absorption and Fabry-Perot resonances in the air-coating-surface cavity, the absorption spectra of such thin-film structures show a strong resonant peak under certain illumination conditions. These resonances are sensitive to the structural and material properties of the thin-film, metal underlayer and ambient conditions and hence can be used for gas and vapor sensing applications. Specifically, we present our proof of principle experimental results for humidity sensing using a thin-film structure comprising Rhodamine6G-doped polyvinyl alcohol (PVA) films on silver substrates. Depending on the PVA film thickness, dye-concertation and angle of incidence, the resonant absorption peak can undergo either red-shift or blue-shift as RH level increases in the range 20% to 60%. Also, the absorption magnitude at certain wavelengths near to resonance show almost linear reduction which can be used as the sensing signal. Our simulation studies show a very good agreement with the experimental data. The spectral and temporal sensitivity of this thin-film structure is attributed to the changes in the thickness of the PVA layer which swells by absorbing water molecules

  15. Modeling of metal nanocluster growth on patterned substrates and surface pattern formation under ion bombardment

    Energy Technology Data Exchange (ETDEWEB)

    Numazawa, Satoshi

    2012-11-01

    This work addresses the metal nanocluster growth process on prepatterned substrates, the development of atomistic simulation method with respect to an acceleration of the atomistic transition states, and the continuum model of the ion-beam inducing semiconductor surface pattern formation mechanism. Experimentally, highly ordered Ag nanocluster structures have been grown on pre-patterned amorphous SiO{sub 2} surfaces by oblique angle physical vapor deposition at room temperature. Despite the small undulation of the rippled surface, the stripe-like Ag nanoclusters are very pronounced, reproducible and well-separated. The first topic is the investigation of this growth process with a continuum theoretical approach to the surface gas condensation as well as an atomistic cluster growth model. The atomistic simulation model is a lattice-based kinetic Monte-Carlo (KMC) method using a combination of a simplified inter-atomic potential and experimental transition barriers taken from the literature. An effective transition event classification method is introduced which allows a boost factor of several thousand compared to a traditional KMC approach, thus allowing experimental time scales to be modeled. The simulation predicts a low sticking probability for the arriving atoms, millisecond order lifetimes for single Ag monomers and {approx}1 nm square surface migration ranges of Ag monomers. The simulations give excellent reproduction of the experimentally observed nanocluster growth patterns. The second topic specifies the acceleration scheme utilized in the metallic cluster growth model. Concerning the atomistic movements, a classical harmonic transition state theory is considered and applied in discrete lattice cells with hierarchical transition levels. The model results in an effective reduction of KMC simulation steps by utilizing a classification scheme of transition levels for thermally activated atomistic diffusion processes. Thermally activated atomistic movements

  16. Investigating the molecule-substrate interaction of prototypic tetrapyrrole compounds: Adsorption and self-metalation of porphine on Cu(111)

    International Nuclear Information System (INIS)

    We report on the adsorption and self-metalation of a prototypic tetrapyrrole compound, the free-base porphine (2H-P), on the Cu(111) surface. Our multitechnique study combines scanning tunneling microscopy (STM) results with near-edge X-ray absorption fine-structure (NEXAFS) and X-ray photoelectron spectroscopy (XPS) data whose interpretation is supported by density functional theory calculations. In the first layer in contact with the copper substrate the molecules adsorb coplanar with the surface as shown by angle-resolved NEXAFS measurements. The quenching of the first resonance in the magic angle spectra of both carbon and nitrogen regions indicates a substantial electron transfer from the substrate to the LUMO of the molecule. The stepwise annealing of a bilayer of 2H-P molecules sequentially transforms the XP and NEXAFS signatures of the nitrogen regions into those indicative of the coordinated nitrogen species of the metalated copper porphine (Cu-P), i.e., we observe a temperature-induced self-metalation of the system. Pre- and post-metalation species are clearly discriminable by STM, corroborating the spectroscopic results. Similar to the free-base porphine, the Cu-P adsorbs flat in the first layer without distortion of the macrocycle. Additionally, the electron transfer from the copper surface to the molecule is preserved upon metalation. This behavior contrasts the self-metalation of tetraphenylporphyrin (2H-TPP) on Cu(111), where both the molecular conformation and the interaction with the substrate are strongly affected by the metalation process.

  17. Investigating the molecule-substrate interaction of prototypic tetrapyrrole compounds: Adsorption and self-metalation of porphine on Cu(111)

    Energy Technology Data Exchange (ETDEWEB)

    Diller, K.; Klappenberger, F.; Allegretti, F.; Papageorgiou, A. C.; Fischer, S.; Wiengarten, A.; Joshi, S.; Seufert, K.; Ecija, D.; Auwaerter, W.; Barth, J. V. [Physik Department E20, Technische Universitaet Muenchen, James-Franck-Str. 1, D-85748 Garching (Germany)

    2013-04-21

    We report on the adsorption and self-metalation of a prototypic tetrapyrrole compound, the free-base porphine (2H-P), on the Cu(111) surface. Our multitechnique study combines scanning tunneling microscopy (STM) results with near-edge X-ray absorption fine-structure (NEXAFS) and X-ray photoelectron spectroscopy (XPS) data whose interpretation is supported by density functional theory calculations. In the first layer in contact with the copper substrate the molecules adsorb coplanar with the surface as shown by angle-resolved NEXAFS measurements. The quenching of the first resonance in the magic angle spectra of both carbon and nitrogen regions indicates a substantial electron transfer from the substrate to the LUMO of the molecule. The stepwise annealing of a bilayer of 2H-P molecules sequentially transforms the XP and NEXAFS signatures of the nitrogen regions into those indicative of the coordinated nitrogen species of the metalated copper porphine (Cu-P), i.e., we observe a temperature-induced self-metalation of the system. Pre- and post-metalation species are clearly discriminable by STM, corroborating the spectroscopic results. Similar to the free-base porphine, the Cu-P adsorbs flat in the first layer without distortion of the macrocycle. Additionally, the electron transfer from the copper surface to the molecule is preserved upon metalation. This behavior contrasts the self-metalation of tetraphenylporphyrin (2H-TPP) on Cu(111), where both the molecular conformation and the interaction with the substrate are strongly affected by the metalation process.

  18. Development and characterization of a metallic substrat for nanostructured membranes in the separation of gas mixtures; Entwicklung und Charakterisierung eines metallischen Substrats fuer nanostrukturierte Gastrennmembranen

    Energy Technology Data Exchange (ETDEWEB)

    Brands, Katharina

    2010-07-01

    In order to minimize the further increase of CO{sub 2}-content in the atmosphere, efforts are made to separate and store CO{sub 2} from exhaust gases of fossil power plants. Beside well-established separation techniques like chemical scrubber, the application of membrane technology is intensively investigated. One focus of this thesis is the development of metal supported substrates for microporous ceramic gas separation membranes, which are expected to have a higher mechanical stability than ceramic supported substrates. Starting with commercial porous steel substrates, interlayers are applied by wet powder spraying. For the interlayers the materials 1.4404-stainless steel and TiO{sub 2} or 1.4845-stainless steel and yttria stabilized zirconia (8YSZ) are chosen. The interlayers have to be defect-free, as minimal defects can deteriorate the membrane performance. By a subsequent mechanical treatment and an adjustment of the viscosity of the 8YSZ-suspension, the surface quality is considerably increased. At the same time the limits of the wet powder spraying process become obvious, as sporadic agglomerates, which are formed during the spraying process, cannot be totally avoided. The metal supported substrates are characterized regarding to the interaction between steel and ceramic, the roughness of the layers compared to polished ceramic substrates, the mechanical properties and the flow through the substrates. Furthermore microporous ceramic gas separation membranes are deposited on wet powder sprayed and dip coated substrates. The selectivity of these membranes is above Knudsen selectivity. The other focus of the thesis is the exposure of substrates and membranes to real flue gas conditions. Beside microporous ceramic membranes polymer membranes are analysed as a reference, which show a higher state of development compared to microporous ceramic membranes. For this purpose a test bed is built up in the EnBW ''Rheinhafendampfkraftwerk RDK 7&apos

  19. Nonthermal inactivation of Escherichia coli K12 in buffered peptone water using a pilot-plant scale supercritical carbon dioxide system with gas-liquid porous metal contractor

    Science.gov (United States)

    This study evaluated the effectiveness of a supercritical carbon dioxide (SCCO2) system, with a gas-liquid CO2 contactor, for reducing Escherichia coli K12 in diluted buffered peptone water. 0.1% (w/v) buffered peptone water inoculated with E. coli K12 was processed using the SCCO2 system at CO2 con...

  20. Diameter distribution of thermally evaporated indium metal islands on silicon substrates

    Science.gov (United States)

    Balch, Joleyn; Tsakalakos, Loucas; Huber, William; Grande, James; Knussman, Michael; Cale, Timothy S.

    2007-09-01

    Although many groups have studied the initial growth stages of various metals, including indium, there is little information in literature on diameter distributions of indium in relation to film thickness or annealing conditions. This paper reports island size distributions of thermally evaporated In islands on Si (100) and Si (111) substrates for nominal film thicknesses ranging from 5 to 50 nm. Because indium has a low melting temperature, and therefore a high homologous temperature at room temperature, 3-dimensional islands form during deposition with no subsequent heat treatments needed. Island diameters were calculated using commercial image analysis software in conjunction with SEM images of the samples. It is found that there is a bimodal island diameter distribution for nominal indium thicknesses greater than 5 nm. While the diameters of the larger islands increase exponentially with nominal thickness, those of the smaller islands increase linearly, and therefore more slowly, with nominal thickness. For nominal thickness of 50 nm, the average diameters of the small and large islands differ by almost an order of magnitude. Anneal conditions were studied in an attempt to narrow diameter distributions. Samples of each nominal thickness were annealed at temperatures ranging from 360°C to 550°C and the diameters again measured. The range of island diameters become narrower with 360°C anneal and volume average island diameter increases by ~30-50%. This narrowing of the distribution occurs due to smaller islands being absorbed by the larger in a process akin to Ostwald ripening, which is facilitated by higher surface diffusivities at higher homologous temperatures.

  1. Determination of physical properties for β-TCP + chitosan biomaterial obtained on metallic 316L substrates

    Energy Technology Data Exchange (ETDEWEB)

    Mina, A. [Tribology, Powder Metallurgy and Processing of Solid Recycled Research Group, Universidad del Valle, Cali (Colombia); Tecno-Academia ASTIN SENA Reginal Valle (Colombia); Castaño, A. [Tribology, Powder Metallurgy and Processing of Solid Recycled Research Group, Universidad del Valle, Cali (Colombia); Caicedo, J.C., E-mail: julio.cesar.caicedo@correo.univalle.edu.co [Tribology, Powder Metallurgy and Processing of Solid Recycled Research Group, Universidad del Valle, Cali (Colombia); Caicedo, H.H. [Biologics Research, Biotechnology Center of Excellence, Janssen R& D, LLC, Pharmaceutical Companies of Johnson & Johnson, Spring House, PA 19477 (United States); National Biotechnology & Pharmaceutical Association, Chicago, IL 60606 (United States); Aguilar, Y. [Tribology, Powder Metallurgy and Processing of Solid Recycled Research Group, Universidad del Valle, Cali (Colombia)

    2015-06-15

    Material surface modification, particularly the deposition of special coatings on the surface of surgical implants, is extensively used in bone tissue engineering applications. β-Tricalcium phosphate/Chitosan (β-TCP/Ch) coatings were deposited on 316L stainless steel (316L SS) substrates by a cathodic electro-deposition technique at different coating compositions. The crystal lattice arrangements were analyzed by X-Ray diffraction (XRD), and the results indicated that the crystallographic structure of β-TCP was affected by the inclusion of the chitosan content. The changes in the surface morphology as a function of increasing chitosan in the coatings via scanning electron microscopy (SEM) and atomic force microscopy (AFM) showed that root-mean square values of the β-TCP/Ch coatings decreased by further increasing chitosan percentage. The elastic–plastic characteristics of the coatings were determined by conducting nanoindentation test, indicating that increase of chitosan percentage is directly related to increase of hardness and elastic modulus of the β-TCP/Ch coatings. Tribological characterization was performed by scratch test and pin-on-disk test to analyze the changes in the surface wear of β-TCP/Ch coatings. Finally, the results indicated an improvement in the mechanical and tribological properties of the β-TCP/Ch coatings as a function of increasing of the chitosan percentage. This new class of coatings, comprising the bioactive components, is expected not only to enhance the bioactivity and biocompatibility, but also to protect the surface of metallic implants against wear and corrosion. - Highlights: • Superficial phenomenon that occurs in tribological surface of β-tricalcium phosphate-chitosan coatings. • Improvement on surface mechanical properties of ceramic-polymeric and response to surface tribological damage. • β-tricalcium phosphate-chitosan coatings that offer highest performance in the biomedical devices.

  2. Determination of physical properties for β-TCP + chitosan biomaterial obtained on metallic 316L substrates

    International Nuclear Information System (INIS)

    Material surface modification, particularly the deposition of special coatings on the surface of surgical implants, is extensively used in bone tissue engineering applications. β-Tricalcium phosphate/Chitosan (β-TCP/Ch) coatings were deposited on 316L stainless steel (316L SS) substrates by a cathodic electro-deposition technique at different coating compositions. The crystal lattice arrangements were analyzed by X-Ray diffraction (XRD), and the results indicated that the crystallographic structure of β-TCP was affected by the inclusion of the chitosan content. The changes in the surface morphology as a function of increasing chitosan in the coatings via scanning electron microscopy (SEM) and atomic force microscopy (AFM) showed that root-mean square values of the β-TCP/Ch coatings decreased by further increasing chitosan percentage. The elastic–plastic characteristics of the coatings were determined by conducting nanoindentation test, indicating that increase of chitosan percentage is directly related to increase of hardness and elastic modulus of the β-TCP/Ch coatings. Tribological characterization was performed by scratch test and pin-on-disk test to analyze the changes in the surface wear of β-TCP/Ch coatings. Finally, the results indicated an improvement in the mechanical and tribological properties of the β-TCP/Ch coatings as a function of increasing of the chitosan percentage. This new class of coatings, comprising the bioactive components, is expected not only to enhance the bioactivity and biocompatibility, but also to protect the surface of metallic implants against wear and corrosion. - Highlights: • Superficial phenomenon that occurs in tribological surface of β-tricalcium phosphate-chitosan coatings. • Improvement on surface mechanical properties of ceramic-polymeric and response to surface tribological damage. • β-tricalcium phosphate-chitosan coatings that offer highest performance in the biomedical devices

  3. Chemically-modified graphene sheets as an active layer for eco-friendly metal electroplating on plastic substrates

    Energy Technology Data Exchange (ETDEWEB)

    Oh, Joon-Suk; Hwang, Taeseon; Nam, Gi-Yong; Hong, Jung-Pyo [Department of Polymer Science and Engineering, Sungkyunkwan University, Chunchun-dong, Jangan-gu, Suwon, 440-746 (Korea, Republic of); Bae, Ah-Hyun; Son, Sang-Ik; Lee, Geun-Ho; Sung, Hak kyung [Manufacturing Tech. Center, Samsung Electronics Co., Ltd., Maetan-dong, Yeongtong-gu, Suwon, 443-742 (Korea, Republic of); Choi, Hyouk Ryeol; Koo, Ja Choon [School of Mechanical Engineering, Sungkyunkwan University, Suwon (Korea, Republic of); Nam, Jae-Do, E-mail: jdnam@skku.edu [Department of Polymer Science and Engineering, Sungkyunkwan University, Chunchun-dong, Jangan-gu, Suwon, 440-746 (Korea, Republic of); Department of Energy Science, Sungkyunkwan University, Suwon (Korea, Republic of)

    2012-10-30

    Eco-friendly nickel (Ni) electroplating was carried out on a plastic substrate using chemically modified graphene sheets as an active and conductive layer to initiate electroplating without using conventional pre-treatment or electroless metal-seeding processes. A graphene oxide (GO) solution was self-assembled on a polyethylene terephthalate (PET) film followed by evaporation to give GO layers (thickness around 6.5 {mu}m) on PET (GO/PET) film. Then, the GO/PET film was chemically and thermally reduced to convert the GO layers to reduced graphene oxide (RGO) layers on the PET substrate. The RGO-coated PET (RGO/PET) film showed the sheet resistance of 100 {Omega} per square. On RGO/PET film, Ni electroplating was conducted under the constant-current condition and the entire surface of the PET film was completely metalized with Ni without any voids.

  4. A facile metal-free "grafting-from" route from acrylamide-based substrate toward complex macromolecular combs

    KAUST Repository

    Zhao, Junpeng

    2013-01-01

    High-molecular-weight poly(N,N-dimethylacrylamide-co-acrylamide) was used as a model functional substrate to investigate phosphazene base (t-BuP 4)-promoted metal-free anionic graft polymerization utilizing primary amide moieties as initiating sites. The (co)polymerization of epoxides was proven to be effective, leading to macromolecular combs with side chains being single- or double-graft homopolymer, block copolymer and statistical copolymer. © 2013 The Royal Society of Chemistry.

  5. Adhesion of ceramic coating on thin and smooth metal substrate: A novel approach with a nano-structured ceramic interlayer

    International Nuclear Information System (INIS)

    The adhesion of plasma-sprayed coating is, to a large extent, controlled by the cleanness and roughness of the surface on which the coating is deposited. So, most of the plasma spray procedures involve surface pretreatment by grit-blasting to adapt the roughness of the surface to the size of the impacting particles. This preparation process brings about compressive stresses that make it inappropriate for thin substrates. The present works aim to elaborate a thick ceramic coating (about 0.5 mm thick) on a thin metal substrate (1 mm thick) with a smooth surface (Ra of about 0.4 μm). The coating system is intended for use in a Generation-IV nuclear energy system. It must exhibit a good adhesion between the ceramic topcoat and the smooth metal substrate to meet the specifications of the application. Our approach consisted of depositing the ceramic topcoat by air plasma spraying on a few micrometers thick ceramic layer made by suspension plasma spraying. This nano-structured layer played the role of a bond coat for the topcoat and made it possible to deposit it on the as-received substrate. The adhesion of the nano-structured layer was measured by the Vickers indentation cracking technique and that of the ceramic duplex coating system by tensile test. (authors)

  6. Molecular dynamics simulation of fabrication of Cu mono-component metallic glass by physical vapor deposition on Zr substrate

    CERN Document Server

    Yu, Yang; Cui, Fenping

    2016-01-01

    In this work, the single-component Cu metallic glass was fabricated by the physical vapor deposition on the Zr (0001) crystal substrate at 100 K using the classical molecular dynamic simulation. The same deposition process was performed on the Cu (1 0 0) and Ni (1 0 0) crystal substrate for comparison, only the Cu crystal deposited layer with the fcc structure can be obtained. When depositing the Cu atoms on the Zr substrate at 300 K, the crystal structure was formed, which indicates that except the suitable substrate, low temperature is also a key factor for the amorphous structure formation. The Cu liquid quenching from 2000 K to 100 K were also simulated with the cooling rate 1012 K/s to form the Cu glass film in this work. The Cu metallic glass from the two different processes (physical vapor deposition and rapid thermal quenching from liquid) revealed the same radial distribution function and X-ray diffraction pattern, but the different microstructure from the coordination number and Voronoi tessellation...

  7. Structural study of ZnSe films grown on substrate with In{sub x}Ga{sub 1-x}As and Al{sub 1-x}Ga{sub x}As buffer layers: strain, relaxation and lattice parameter

    Energy Technology Data Exchange (ETDEWEB)

    Perez Ladron de Guevara, H.; Gaona-Couto, A.; Vidal, M.A. [Instituto de Investigacion En Comunicacion Optica (IICO), Universidad Autonoma de San Luis Potosi, San Luis Potosi (Mexico)]. E-mail: mavidal@cactus.iico.uaslp.mx; Luyo Alvarado, J.; Melendez Lira, M.; Lopez-Lopez, M. [Departamento de Fisica, Centro de Investigacion y Estudios Avanzados del IPN, Mexico DF (Mexico)

    2002-06-21

    ZnSe layers of various thickness were grown on (001) GaAs substrates, using In{sub x}Ga{sub 1-x}As or Al{sub 1-x}Ga{sub x}As as buffer layers by molecular beam epitaxy and were studied by high-resolution x-ray diffraction. The principal structural characteristics of ZnSe layer and buffer layer were determined using several reflections, such as (004) and two pairs of coupled asymmetric reflections, namely (224), (-2-24) and (115) (-1-15). In order to evaluate their validity, the experimental data obtained from these reflections were handled by means of two known expressions found in the literature. We have found the relaxation process of ZnSe layers is well described by a geometrical model including the thermal strain and small strain due to work hardening. The relaxation process is faster for ZnSe grown on ternary buffer layers despite the fact that, some buffer layers are pseudomorphically grown to the substrate; therefore we conclude that not only the lattice mismatches have effect on the relaxation process but also the surface state of the buffer layer has an influence in this process. (author)

  8. Microstructural analysis of InGaN/GaN epitaxial layers of metal organic chemical vapor deposition on c-plane of convex patterned sapphire substrate

    International Nuclear Information System (INIS)

    The microstructures of the P-GaN (250 nm)/GaN cap (∼ 35 nm)/7 pairs of InGaN/GaN MQWs (multi-quantum wells)/n-GaN (3 μm)/HT (high temperature)-GaN (3 μm)/LT (low temperature)-GaN buffer (5 nm) on c-plane convex patterned sapphire substrate were analyzed using transmission electron microscopy (TEM). High density of dislocations in the LT-GaN buffer layer at both flat and convex patterned regions was observed to form. At the flat region, some of high dislocations formed at LT-GaN buffer grew over, bended to from stair-like dislocations extended along the edge of the convex pattern and then transformed to TDs (threading dislocations) extending through the InGaN/GaN epitaxial layers. However, few TDs reached the top of the epitaxial layers. Quantitative analysis revealed that the dislocation density has been drastically reduced to ∼ 106 cm−2, reducing formation of V-defects at the 7 pairs of multi-quantum-wells near the surface. - Highlights: • The InGaN/GaN epitaxial layers were grown on convex patterned sapphire substrate. • We systematically study the defect structures by transmission electron microscopy. • Reduce threading dislocation and V defect by growth on convex pattered substrate. • Improving of overall microstructure by growth on convex pattern substrate

  9. Do CVD grown graphene films have antibacterial activity on metallic substrates?

    CERN Document Server

    Dellieu, Louis; Reckinger, Nicolas; Didembourg, Christian; Letesson, Jean-Jacques; Sarrazin, Michael; Deparis, Olivier; Matroule, Jean-Yves; Colomer, Jean-François

    2014-01-01

    Accurate assessment of the antibacterial activity of graphene requires consideration of both the graphene fabrication method and, for supported films, the properties of the substrate. Large-area graphene films produced by chemical vapor deposition were grown directly on copper substrates or transferred on a gold substrate and their effect on the viability and proliferation of the Gram-positive bacteria Staphylococcus aureus and the Gram-negative bacteria Escherichia coli were assessed. The viability and the proliferation of both bacterial species were not affected when they were grown on a graphene film entirely covering the gold substrate, indicating that conductivity plays no role on bacterial viability and graphene has no antibacterial activity against S. aureus and E. coli. On the other hand, antibacterial activity was observed when graphene coated the copper substrates, resulting from the release of bactericidal cupric ions in inverse proportion to the graphene surface coverage.

  10. Determination of the thickness of two-dimensional transition-metal dichalcogenide by the Raman intensity of the substrate

    Science.gov (United States)

    Wang, Ying Ying; Zhi Li, Ai; Hao Wang, Yi; Liang, Yao; Jiang, Jie; Nan, Hai Yan; Ni, Zhen Hua; Wang, Dong; Zhong, Bo; Wen, Guang Wu

    2016-02-01

    Two-dimensional (2D) transition-metal dichalcogenide (TMD) exhibits thickness-dependent optical, electronic, mechanical, chemical and vibrational properties, and a fast, non-destructive thickness characterization technique is very important for fully understanding the thickness-dependent properties of TMD nanosheets. MoS2 and WSe2 nanosheets with different layer numbers are fabricated by a mechanical exfoliation method and transferred onto SiO2 (300 nm)/Si substrate. In this work, it is found that the Raman area (i.e. the integrated intensity) ratio between the Si peak from SiO2/Si substrate underneath TMD nanosheets (ASi) and that from bare SiO2/Si substrate (ASi(0)), ASi/ASi(0), can be used to accurately identify the layer number of those TMD nanosheets. ASi/ASi(0) is then calculated using the Fresnel equations, the absorption of TMD nanosheets is included in the calculation, which has not been considered in previous work. The consideration of absorption is especially necessary for TMD which has a quite large extinction coefficient. Identification of single-layer TMD with different complex refractive indices on SiO2/Si substrate and on Si substrate using this method is given. The effects of thickness of SiO2 and excitation wavelength on the layer number identification using this method are also discussed.

  11. New Failure Mode of Flip-Chip Solder Joints Related to the Metallization of an Organic Substrate

    Science.gov (United States)

    Jang, J. W.; Yoo, S. J.; Hwang, H. I.; Yuk, S. Y.; Kim, C. K.; Kim, S. J.; Han, J. S.; An, S. H.

    2015-10-01

    We report a new failure phenomenon during flip-chip die attach. After reflow, flip-chip bumps were separated between the Al and Ti layers on the Si die side. This was mainly observed at the Si die corner. Transmission electron microscopy images revealed corrosion of the Al layer at the edge of the solder bump metallization. The corrosion at the metallization edge exhibited a notch shape with high stress concentration factor. The organic substrate had Cu metallization with an organic solderable preservative (OSP) coating layer, where a small amount of Cl ions were detected. A solder bump separation mechanism is suggested based on the reaction between Al and Cl, related to the flow of soldering flux. During reflow, the flux will dissolve the Cl-containing OSP layer and flow up to the Al layer on the Si die side. Then, the Cl-dissolved flux will actively react with Al, forming AlCl3. During cooling, solder bumps at the Si die corner will separate through the location of Al corrosion. This demonstrated that the chemistry of the substrate metallization can affect the thermomechanical reliability of flip-chip solder joints.

  12. On the use, characterization and performance of silane coupling agents between organic coatings and metallic or ceramic substrates

    Science.gov (United States)

    van Ooij, W. J.; Zhang, B. C.; Conners, K. D.; Hörnström, S.-E.

    1996-01-01

    Examples are given of the use of organofunctional silane coupling agents for promoting bonding between organic coatings and metallic or ceramic (i.e. oxide) substrates. The orientation of the silane molecules and the type of bonding with the metal oxide can be determined successfully by Time-of-Flight SIMS. Oriented films of aminosilanes are demonstrated to be unstable in air. A prerinse with an inorganic silicate is introduced as a suitable method for masking the ubiquitous carbonaceous contamination at the metal surface, thus promoting the proper orientation and covalent bonding. Some practical applications are described, such as the pretreatment of Galvalume■ surfaces as a replacement of existing chromate treatments in coil coating applications. Electrochemical Impedance Spectroscopy (EIS) is shown to be a powerful tool for studying the performance of the silane treatment under a paint.

  13. Crystal quality and electrical properties of p-type GaN thin film on Si(111 substrate by metal-organic chemical vapor deposition MOCVD

    Directory of Open Access Journals (Sweden)

    G.M. Wu

    2007-09-01

    Full Text Available Purpose: In this paper, p-GaN samples have been grown on silicon substrates under various processing conditions. The effects of growth tenperature and thermal annealing on the crystal quality and strain were carefully investigated. The electrical properties such as hole concentration and mobility would be discussed.Design/methodology/approach: GaN-based III–V semiconductors have become promising materials for short-wavelength optoelectronic devices because of their large and direct band gap energies. In this paper, p-GaN has been grown by metal-organic chemical vapor deposition (MOCVD at 900°C, 950°C, 1000°C, and 1050°C with low temperature LT-deposited AlN/AlGaN buffer layer.Findings: The mobility was achieved at 150 cm2/Vs and the hole concentration was 8x1017 cm-3. SIMS and XRD were used to measure and explain the relationships between hole concentration and the growth temperature. When the growth temperature was increased to 1000°C, the hole concentration was increased by ten times. According to the experimental results, the optimal growth temperature was 1000°C. After the thermal annealing process at temperature 850°C for 2 minutes, the FWHM of p-GaN was lowered to 617 arcsec. The effects of growth temperature were explained in the two temperature regions. From 900°C to 1000°C, the incorporation rate of Mg was slightly increased and the strain decreased with the growth temperature. Mg would provide holes and the lower strain would result in better crystal quality. The crystal quality and Mg concentration effects on hole concentration below 1000°C was thus beneficiary. On the other hand, when the growth temperature was further increased, the strain and FWHM increased while hole concentration decreased at 1050°C. At this high temperature, Si might become donor in GaN.Research limitations/implications: It was suggested that the hole concentration reduced at 1050°C due to the Si diffusion and the strain caused by Mg dopant

  14. Supercritical CO2 assisted electroless plating on polypropylene substrate-effect of injection speed on adhesive force of metal to polymer

    Science.gov (United States)

    Ohshima, Masahiro; Tsubouchi, Kensuke; Ishihara, Shota; Hikima, Yuta; Tengsuwan, Siwach

    2016-03-01

    The aqueous plating solution cannot be diffused into a plain polypropylene (PP) substrate and consequently Ni-P metal layer cannot be formed by electroless plating on the PP substrate with a satisfied degree of adhesive force unless the hydrophilicity of the substrate surface was increased. A block copolymer PP-b-polyethylene oxide (PP-b-PEO) was used to increase the hydrophilicity of the surface and the adhesive force of the metal layer to the satisfactory level. Our previous study showed the morphology of PP-b-PEO domain near the surface of substrate strongly affected the adhesiveness of the metal layer to the substrate. The degrees of elongation and orientation of the PP-b-PEO domains in PP matrix were the key factors of determining the thickness of the metal-PP composite layer and the resulting adhesive strength. In this study, the effect of injection molding condition on the degrees of elongation and orientation was investigated: PP/PP-b-PEO blend substrates were prepared by injection molding at different injection speed. The higher injection speed increased the degrees of elongation and orientation of copolymer and formed multilayered structure of the copolymer domains. It could produce the electroless plating PP substrate with the higher adhesive strength of the Ni-P metal layer to the PP substrate.

  15. Improved gate oxide integrity of strained Si n-channel metal oxide silicon field effect transistors using thin virtual substrates

    Science.gov (United States)

    Yan, L.; Olsen, S. H.; Escobedo-Cousin, E.; O'Neill, A. G.

    2008-05-01

    This work presents a detailed study of ultrathin gate oxide integrity in strained Si metal oxide silicon field effect transistors (MOSFETs) fabricated on thin virtual substrates aimed at reducing device self-heating. The gate oxide quality and reliability of the devices are compared to those of simultaneously processed Si control devices and conventional thick virtual substrate devices that have the same Ge content (20%), strained Si channel thickness, and channel strain. The thin virtual substrates offer the same mobility enhancement as the thick virtual substrates (˜100% compared to universal mobility data) and are effective at reducing device self-heating. Up to 90% improvement in gate leakage current is demonstrated for the strained Si n-channel MOSFETs compared to that for the bulk Si controls. The lower leakage arises from the increased electron affinity in tensile strained Si and is significant due to the sizeable strain generated by using wafer-level stressors. The strain-induced leakage reductions also lead to major improvements in stress-induced leakage current (SILC) and oxide reliability. The lower leakage current of the thin and thick virtual substrate devices compares well to theoretical estimates based on the Wentzel-Kramers-Brillouin approximation. Breakdown characteristics also differ considerably between the devices, with the strained Si devices exhibiting a one order of magnitude increase in time to hard breakdown (THBD) compared to the Si control devices following high-field stressing at 17 MV cm-1. The strained Si devices are exempted from soft breakdown. Experimental based analytical leakage modeling has been carried out across the field range for the first time in thin oxides and demonstrates that Poole-Frenkel (PF) emissions followed by Fowler-Nordheim tunneling dominate gate leakage current at low fields in all of the devices. This contrasts to the frequently reported assumption that direct tunneling dominates gate leakage in ultrathin

  16. Performance characterization of metallic substrates coated by HVOF WC–Co

    International Nuclear Information System (INIS)

    Integral to the performance of high-velocity oxygen-fuel (HVOF) coatings is the thermo-mechanical interaction associated with the thermal misfit, or differences in thermal expansion coefficients (CTEs), between coating and substrate. This investigation reports results on the microstructures, chemical phase content, coating–substrate misfit residual stress, and wear resistance. For this purpose a systematic characterization of WC–Co sprayed coatings on a number of substrates covering a range of CTE values were pursued for both the as-coated and heat-treated conditions. The neutron diffraction technique in conjunction with sub-millimeter sized gauge volumes enabled depth-resolved studies of the stress in the coatings and substrates by paying special attention to the determination of the stress contribution attributed by the final spray process. In the as-coated condition the stress values in the coatings were compressive for CTEs larger than that of WC–Co and tensile for CTE lower than WC–Co. Wear resistance increased for increased compressive stress and macrohardness. In the heat-treated condition, this trend became enhanced due to increased compressive stress in the coatings. - Highlights: • Four different substrate systems coated with HVOF WC-Co has been investigated. • Each substrate set encompassed the grit-blast surface and as-coated conditions, as well as their heat-treated counterparts. • Microstructural, macrohardness, wear performance and depth-resolved residual stress characterised. • Successful application of neutron strain scanning to investigating the combined systems, coatings and substrates. • Link observed between macrohardness, residual stress and wear performance

  17. Performance characterization of metallic substrates coated by HVOF WC–Co

    Energy Technology Data Exchange (ETDEWEB)

    Venter, Andrew M., E-mail: andrew.venter@necsa.co.za [Research and Development Division, Necsa Limited, Pretoria (South Africa); School of Chemical and Metallurgical Engineering, University of the Witwatersrand (South Africa); DST/NRF Centre of Excellence in Strong Materials, University of the Witwatersrand (South Africa); Oladijo, O. Philip [School of Chemical and Metallurgical Engineering, University of the Witwatersrand (South Africa); DST/NRF Centre of Excellence in Strong Materials, University of the Witwatersrand (South Africa); Luzin, Vladimir [ANSTO (Australian Nuclear Science and Technology Organisation), Lucas Height (Australia); Cornish, Lesley A.; Sacks, Natasha [School of Chemical and Metallurgical Engineering, University of the Witwatersrand (South Africa); DST/NRF Centre of Excellence in Strong Materials, University of the Witwatersrand (South Africa)

    2013-12-31

    Integral to the performance of high-velocity oxygen-fuel (HVOF) coatings is the thermo-mechanical interaction associated with the thermal misfit, or differences in thermal expansion coefficients (CTEs), between coating and substrate. This investigation reports results on the microstructures, chemical phase content, coating–substrate misfit residual stress, and wear resistance. For this purpose a systematic characterization of WC–Co sprayed coatings on a number of substrates covering a range of CTE values were pursued for both the as-coated and heat-treated conditions. The neutron diffraction technique in conjunction with sub-millimeter sized gauge volumes enabled depth-resolved studies of the stress in the coatings and substrates by paying special attention to the determination of the stress contribution attributed by the final spray process. In the as-coated condition the stress values in the coatings were compressive for CTEs larger than that of WC–Co and tensile for CTE lower than WC–Co. Wear resistance increased for increased compressive stress and macrohardness. In the heat-treated condition, this trend became enhanced due to increased compressive stress in the coatings. - Highlights: • Four different substrate systems coated with HVOF WC-Co has been investigated. • Each substrate set encompassed the grit-blast surface and as-coated conditions, as well as their heat-treated counterparts. • Microstructural, macrohardness, wear performance and depth-resolved residual stress characterised. • Successful application of neutron strain scanning to investigating the combined systems, coatings and substrates. • Link observed between macrohardness, residual stress and wear performance.

  18. Evaluation of the barrier capability of Zr-Si films with different substrate temperature for Cu metallization

    International Nuclear Information System (INIS)

    Barrier capability of Zr-Si diffusion barriers in Cu metallization has been investigated. Amorphous Zr-Si diffusion barriers were deposited on the Si substrates by RF reactive magnetron sputtering under various substrate temperatures. An increase in substrate temperature results in a slightly decreased deposition rate together with an increase in mass density. An increase in substrate temperature also results in grain growth as deduced from field emission scanning electron microscopy (FE-SEM) micrographs. X-ray diffraction (XRD) spectra and Auger electron spectroscopy (AES) depth profiles for Cu/Zr-Si(RT)/Si and Cu/Zr-Si(300 deg. C)/Si samples subjected to anneal at various temperatures show that the thermal stability was strongly correlated with the deposition temperature (consequently different density and chemical composition etc.) of the Zr-Si barrier layers. ZrSi(300 deg. C) with higher mass density make the Cu/Zr-Si(300 deg. C)/Si sample more stable. The appearance of Cu3Si in the Cu/Zr-Si/Si sample is attributed to the failure mechanism which may be associated with the diffusion of Cu and Si via the grain boundaries of the Zr-Si barriers.

  19. High-quality eutectic-metal-bonded AlGaAs-GaAs thin films on Si substrates

    Science.gov (United States)

    Venkatasubramanian, R.; Timmons, M. L.; Humphreys, T. P.; Keyes, B. M.; Ahrenkiel, R. K.

    1992-02-01

    Device quality GaAs-AlGaAs thin films have been obtained on Si substrates, using a novel approach called eutectic-metal-bonding (EMB). This involves the lattice-matched growth of GaAs-AlGaAs thin films on Ge substrates, followed by bonding onto a Si wafer. The Ge substrates are selectively removed by a CF4/O2 plasma etch, leaving high-quality GaAs-AlGaAs thin films on Si substrates. A minority-carrier lifetime of 103 ns has been obtained in a EMB GaAs-AlGaAs double heterostructure on Si, which is nearly forty times higher than the state-of-the-art lifetime for heteroepitaxial GaAs on Si, and represents the largest reported minority-carrier lifetime for a freestanding GaAs thin film. In addition, a negligible residual elastic strain in the EMB GaAs-AlGaAs films has been determined from Raman spectroscopy measurements.

  20. Investigation of the contact angles between various molten metals and substrates of niobium and zirconium. Final report. [Sessile drop technique

    Energy Technology Data Exchange (ETDEWEB)

    Munir, Z.A.

    1977-08-01

    The sessile drop technique was utilized for the determination of the contact angles between droplets of liquid tin, indium, and gallium; and substrates of niobium and zirconium. Contact angles, theta, were measured for various substrate surface roughness and over the temperature range 30 to 650/sup 0/C. Values of theta for all of these systems were found to be greater than 90/sup 0/ i.e., constituting a case of nonwetting between the liquid metals and the substrates. Three characteristic regions of the temperature dependence of contact angles were observed. A steady-state region in which the contact angle is relatively independent of temperature was preceded and followed by regions in which theta decreased rapidly with increasing temperature. For the steady-state or second region, contact angles were found to be independent of time whereas in the third region contact angles showed a decreasing trend with time at constant temperature. In accordance with theoretical predictions for theta greater than 90/sup 0/, increasing roughness of the substrate caused a corresponding increase in theta. Electron microprobe analyses showed that only the Ga--Zr system exhibited evidence of diffusion at the interface. Photographs of the sessile drop of this system over a period of time indicated that the drop had spread over a greater area thus supporting the possibility of a surface diffusion mass-transport process.

  1. The role of substrate electrons in the wetting of a metal surface

    DEFF Research Database (Denmark)

    Schiros, T.; Takahashi, O.; Andersson, Klas Jerker;

    2010-01-01

    We address how the electronic and geometric structures of metal surfaces determine water-metal bonding by affecting the balance between Pauli repulsion and electrostatic attraction. We show how the rigid d-electrons and the softer s-electrons utilize different mechanisms for the redistribution...

  2. General Deposition of Metal-Organic Frameworks on Highly Adaptive Organic-Inorganic Hybrid Electrospun Fibrous Substrates.

    Science.gov (United States)

    Liu, Chang; Wu, Yi-Nan; Morlay, Catherine; Gu, Yifan; Gebremariam, Binyam; Yuan, Xiao; Li, Fengting

    2016-02-01

    Electrospun nanofibrous mats are ideal substrates for metal-organic frameworks (MOFs) crystal deposition because of their specific structural parameters and chemical tenability. In this work, we utilized organic-inorganic hybrid electrospun fibrous mats as support material to study the deposition of various MOF particles. HKUST-1 and MIL-53(Al) were produced through solvothermal method, while ZIF-8 and MIL-88B(Fe) were prepared using microwave-induced heating method. The synthesis procedure for both methods were simple and effective because the hybrid nanofibrous mats showed considerable affinity to MOF particles and could be used without additional modifications. The obtained MOF composites exhibited effective incorporation between MOF particles and the porous substrates. MIL-53(Al) composite was applied as fibrous sorbent and showed enhanced adsorption capacity and removal rate, as well as easier operation, compared with thepowdered sample. Moreover, MIL-53(Al) composite was easier to be regenerated compared with powder form.

  3. Metal capped polystyrene nanotubes arrays as super-hydrophobic substrates for SERS applications

    Science.gov (United States)

    Lovera, Pierre; Creedon, Niamh; Alatawi, Hanan; O'Riordan, Alan

    2014-05-01

    We present a low-cost and rapid fabrication and characterisations of polymer nanotubes based substrates inspired by a Gecko's foot, and demonstrate its suitability for Surface Enhanced Raman Scattering (SERS) applications. Substrates are fabricated in a simple, scalable and cost efficient way by melt wetting of polystyrene (PS) in an anodised alumina (AAO) template, followed by silver or gold evaporation. Scanning electron microscopy reveals the substrates are composed of a dense array of free-standing polystyrene nanotubes topped by silver nanocaps. The gaps (electromagnetic hot spots) between adjacent nanotubes are measured to be 30nm +/-15nm. SERS characterisation of the substrates, employing a monolayer of 4-aminothiophenol (4-ABT) as a model molecule, exhibits an enhancement factor of ~1.6 × 106. This value is consistent with the one obtained from 3D-Finite Difference Time Domain (3D-FDTD) simulations of a simplified version of the sample. The contact angle of the substrates is measured to be 150°, making them super-hydrophobic. This later property renders the samples compatible to very low sample volumes and highly sensitive detection (down to 408ppt) of the environmental pollutant crystal violet in water is demonstrated.

  4. Fabrication of 5 cm long epitaxial Sm{sub 0.2}Ce{sub 0.8}O{sub 1.9-x} single buffer layer on textured Ni-5%W substrate for YBCO coated conductors via dip-coating PACSD method

    Energy Technology Data Exchange (ETDEWEB)

    Lei, M.; Wang, W.T.; Pu, M.H.; Yang, X.S.; He, L.J. [Key Laboratory of Magnetic Levitation and Maglev Trains (Ministry of Education of China), Superconductivity R and D Center (SRDC), Mail Stop 165, Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); Cheng, C.H. [Science and Engineering, University of New South Wales, Sydney 2052, New South Wales (Australia); Zhao, Y., E-mail: yzhao@home.swjtu.edu.cn [Key Laboratory of Magnetic Levitation and Maglev Trains (Ministry of Education of China), Superconductivity R and D Center (SRDC), Mail Stop 165, Southwest Jiaotong University, Chengdu, Sichuan 610031 (China)] [Science and Engineering, University of New South Wales, Sydney 2052, New South Wales (Australia)

    2011-11-15

    Epitaxial Sm{sub 0.2}Ce{sub 0.8}O{sub 1.9-x} single buffer layer for YBCO coated conductors was deposited via fluorine-free dip-coating CSD. Flat, dense and crack-free SCO films with sharp (2 0 0) c-axis texture were obtained by carefully controlling the processing. YBCO thin films with a homogeneous surface microstructure were deposited on the SCO-buffered NiW substrate via CSD approach. Five centimeters long epitaxial Sm{sub 0.2}Ce{sub 0.8}O{sub 1.9-x} (SCO) single buffer layer for YBCO coated conductors was deposited via dip-coating polymer-assisted chemical solution deposition (PACSD) approach on bi-axially textured Ni-5%W (2 0 0) alloy substrate. The film formation and texture evolution were investigated using X-ray diffraction and scanning electron microscopy. Flat, dense and crack-free SCO films with sharp (2 0 0) c-axis texture were obtained by way of carefully controlling the concentration of precursor solution, withdrawing speed, annealing temperature and dwelling time. On consideration of both microstructure and texture, epitaxial SCO single buffer layers were fabricated using precursor solution of 0.3 M cationic concentration, the withdrawing speed of 10 mm/min and heat treatment at 1100 deg. C in Ar-5%H{sub 2} mixture gas for 0.5 h. Epitaxial YBCO thin films with a homogeneous surface microstructure were deposited on the SCO-buffered NiW substrate via dip-coating PACSD approach. The PACSD approach was a promising way to fabricate long and low-cost YBCO coated conductors.

  5. Ultrathin aluminum oxide films: Al-sublattice structure and the effect of substrate on ad-metal adhesion

    Energy Technology Data Exchange (ETDEWEB)

    JENNISON,DWIGHT R.; BOGICEVIC,ALEXANDER

    2000-03-06

    First principles density-functional slab calculations are used to study 5 {angstrom} (two O-layer) Al{sub 2}O{sub 3} films on Ru(0001) and Al(111). Using larger unit cells than in a recent study, it is found that the lowest energy stable film has an even mix of tetrahedral (t) and octahedral (o) site Al ions, and thus most closely resembles the {kappa}-phase of bulk alumina. Here, alternating zig-zag rows of t and o occur within the surface plane, resulting in a greater average lateral separation of the Al-ions than with pure t or o. A second structure with an even mix of t and o has also been found, consisting of alternating stripes. These patterns mix easily, can exist in three equivalent directions on basal substrates, and can also be displaced laterally, suggesting a mechanism for a loss of long-range order in the Al-sublattice. While the latter would cause the film to appear amorphous in diffraction experiments, local coordination and film density are little affected. On a film supported by rigid Ru(0001), overlayers of Cu, Pd, and Pt bind similarly as on bulk truncated {alpha}-Al{sub 2}O{sub 3}(0001). However, when the film is supported by soft Al(111), the adhesion of Cu, Pd, and Pt metal overlayers is significantly increased: Oxide-surface Al atoms rise so only they contact the overlayer, while substrate Al metal atoms migrate into the oxide film. Thus the binding energy of metal overlayers is strongly substrate dependent, and these numbers for the above Pd-overlayer systems bracket a recent experimentally derived value for a film on NiAl(110).

  6. Buffer layer for thin film structures

    Energy Technology Data Exchange (ETDEWEB)

    Foltyn, Stephen R.; Jia, Quanxi; Arendt, Paul N.; Wang, Haiyan

    2006-10-31

    A composite structure including a base substrate and a layer of a mixture of strontium titanate and strontium ruthenate is provided. A superconducting article can include a composite structure including an outermost layer of magnesium oxide, a buffer layer of strontium titanate or a mixture of strontium titanate and strontium ruthenate and a top-layer of a superconducting material such as YBCO upon the buffer layer.

  7. Buffer layer for thin film structures

    Science.gov (United States)

    Foltyn, Stephen R.; Jia, Quanxi; Arendt, Paul N.; Wang, Haiyan

    2010-06-15

    A composite structure including a base substrate and a layer of a mixture of strontium titanate and strontium ruthenate is provided. A superconducting article can include a composite structure including an outermost layer of magnesium oxide, a buffer layer of strontium titanate or a mixture of strontium titanate and strontium ruthenate and a top-layer of a superconducting material such as YBCO upon the buffer layer.

  8. Bias dependence of tunneling-electron-induced molecular fluorescence from porphyrin films on noble-metal substrates

    OpenAIRE

    Liu, H.W.; Le, Y.; Nishitani, Ryusuke; Aso, Y; Iwasaki, H.

    2007-01-01

    We investigated scanning tunneling microscope (STM)-excited luminescence from porphyrin (PhTPP and H2TPP) thin films on metal substrate (Au and Ag) under ambient conditions. Molecular fluorescence similar to the corresponding photoluminescence was observed from PhTPP/Au and H2TPP/Ag at both STM bias polarities. We found that at the same experimental condition and parameters, the STM-induced luminescence intensities of maxima peak are similar for PhTPP and H2TPP but weaker by a factor of about...

  9. State of the art and prospective of large scale applications of YBCO thick films grown on metallic substrates

    International Nuclear Information System (INIS)

    In the framework of the high temperature superconducting materials, YBa2Cu3O7 (YBCO) shows very interesting intrinsic superconducting transport properties at temperature higher than the liquid nitrogen temperature. These properties are very important in large scale applications: transport of energy, magnets, transformers, etc. Unfortunately the potential of this material cannot be achieved today, since it is very difficult to manufacture YBCO based tapes or cables. In the last years several groups have tried to overcome the problems with new fabrication techniques. In the present report the state of the art and the prospective in the field of YBCO film fabrication on metallic substrates are presented

  10. Wood-Reinforced Polyphthalamide Resins: MultiFunctional Composite Coating for Metal Substrates

    Directory of Open Access Journals (Sweden)

    M. Barletta

    2014-01-01

    Full Text Available Protective layers were deposited on aluminum substrates by dipping them inside a fluidized bed (FB of wood and polyphthalamide powders. The experimental investigation looked into the influence of the main process parameters (number and composition of superimposed layers, heating temperature, and dipping time on the visual appearance, scratch adhesion, wear resistance, and thermal insulation of the resulting coatings. Micromechanical and tribological responses of the coatings were significantly improved by the effect of the wooden particles dispersed inside the polyphthalamide binder. An improvement of the thermal insulation was also achieved whatever the setting of the process parameters. Further, the coatings displayed good adhesion to the substrate and wear endurance.

  11. Transient behaviour of deposition of liquid metal droplets on a solid substrate

    Science.gov (United States)

    Chapuis, J.; Romero, E.; Soulié, F.; Bordreuil, C.; Fras, G.

    2016-10-01

    This paper investigates the mechanisms that contribute to the spreading of liquid metal macro-drop deposited during Stationary Pulsed Gas Metal Arc Welding on an initially cold solid workpiece. Surface tension and inertial effects take an important part in the behaviour of the liquid metal macro-drop, but in this configuration the influence of energetic effects can also be significant. The experimental results are discussed in the light of dimensional analysis in order to appreciate the influence of the process parameters and the physical mechanisms involved on the spreading of a macro-drop. A law is established to model forced non-isothermal spreading.

  12. Protective conversion coating on mixed-metal substrates and methods thereof

    Energy Technology Data Exchange (ETDEWEB)

    O' Keefe, Matthew J.; Maddela, Surender

    2016-09-06

    Mixed-metal automotive vehicle bodies-in-white comprising ferrous metal surfaces, zinc surfaces, aluminum alloy surfaces, and magnesium alloy surfaces are cleaned and immersed in an aqueous bath comprising an adhesion promoter and an aqueous electrocoat bath (the adhesion promoter may be in the electrocoat bath. The adhesion promoter, which may be a cerium salt, is selected to react with each metal in the body surfaces to form an oxide layer that provides corrosion resistance for the surface and adherence for the deposited polymeric paint coating. The body is cathodic in the electrocoat deposition.

  13. The role of substrate electrons in the wetting of a metal surface

    OpenAIRE

    Schiros, T.; Takahashi, O; Andersson, Klas Jerker; Ostrom, H.; Pettersson, L. G. M.; Nilsson, A.; Ogasawara, H.

    2010-01-01

    We address how the electronic and geometric structures of metal surfaces determine water-metal bonding by affecting the balance between Pauli repulsion and electrostatic attraction. We show how the rigid d-electrons and the softer s-electrons utilize different mechanisms for the redistribution of charge that enables surface wetting. On open d-shell Pt(111), the ligand field of water alters the distribution of metal d-electrons to reduce the repulsion. The closed-shell Cu d(10) configuration o...

  14. Toward interfacing organic semiconductors with ferromagnetic transition metal substrates: enhanced stability via carboxylate anchoring.

    Science.gov (United States)

    Han, R; Blobner, F; Bauer, J; Duncan, D A; Barth, J V; Feulner, P; Allegretti, F

    2016-07-28

    We demonstrate that chemically well-defined aromatic self-assembled monolayers (SAMs) bonded via a carboxylate head group to surfaces of ferromagnetic (FM = Co, Ni, Fe) transition metals can be prepared at ambient temperature in ultra-high vacuum and are thermally stable up to 350-400 K (depending on the metal). The much superior stability over thiolate-bonded SAMs, which readily decompose above 200 K, and the excellent electronic communication guaranteed by the carboxylate bonding render benzoate/FM-metal interfaces promising candidates for application in spintronics. PMID:27417687

  15. On the possibility of contact-induced spin polarization in interfaces of armchair nanotubes with transition metal substrates

    Energy Technology Data Exchange (ETDEWEB)

    Kuzubov, Alexander A. [Siberian Federal University, 79 Svobodny Prospect, 660041 Krasnoyarsk (Russian Federation); Kirensky Institute of Physics, 50 Akademgorodok, 660036 Krasnoyarsk (Russian Federation); Kovaleva, Evgenia A., E-mail: kovaleva.evgeniya1991@mail.ru [Siberian Federal University, 79 Svobodny Prospect, 660041 Krasnoyarsk (Russian Federation); Kirensky Institute of Physics, 50 Akademgorodok, 660036 Krasnoyarsk (Russian Federation); Tomilin, Felix N.; Mikhaleva, Natalya S.; Kuklin, Artem V. [Siberian Federal University, 79 Svobodny Prospect, 660041 Krasnoyarsk (Russian Federation); Kirensky Institute of Physics, 50 Akademgorodok, 660036 Krasnoyarsk (Russian Federation)

    2015-12-15

    The interaction between armchair carbon and boron nitride nanotubes (NT) with ferromagnetic transition metal (TM) surfaces, namely, Ni(111) and Co(0001), was studied by means of density functional theory. Different configurations of composite compartments mutual arrangement were considered. Partial densities of states and spin density spatial distribution of optimized structures were investigated. Influence of ferromagnetic substrate on nanotubes’ electronic properties was discussed. The values of spin polarization magnitude at the Fermi level are also presented and confirm the patterns of spin density spatial distribution. - Highlights: • Interaction of armchair nanotubes with ferromagnetic metal surfaces was investigated. • Different configurations of nanotube's location were considered. • For all nanotubes the energy difference between configurations is negligible. • Nanotubes were found to be more or less spin-polarized regarding to the configuration. • BN nanotubes demonstrate vanishing of the band gap and contact-induced conductivity.

  16. Influence of various thickness metallic interlayers on opto-electric and mechanical properties of AZO thin films on PET substrates

    Energy Technology Data Exchange (ETDEWEB)

    Chang, R.C., E-mail: rcc@mail.sju.edu.tw [Department of Mechanical and Computer-Aided Engineering, St. John' s University, Tamsui, Taipei 25135, Taiwan (China); Li, T.C.; Lin, C.W. [Department of Mechanical and Computer-Aided Engineering, St. John' s University, Tamsui, Taipei 25135, Taiwan (China)

    2012-02-01

    Various thickness metallic interlayers to improve the opto-electric and mechanical properties of aluminum-doped zinc oxide (AZO) thin films deposited on flexible polyethylene terephtalate (PET) substrates are studied. The effects of the interlayers on the resistance and transmittance of the AZO thin films are discussed. The result shows that the metallic interlayers effectively improve the electric resistance but reduce the optical transmittance of the AZO thin films. These phenomena become more obvious as the interlayer thickness increases. However, the AZO with an aluminum interlayer still behaves an acceptable transmittance. Moreover, mechanical tests indicate that the aluminum interlayer increases the hardness and modulus, and reduce the residual stress of the AZO thin films. In contrast, the silver and copper interlayers decrease the AZO's mechanical properties. Comparing to those without any interlayer, the results show that the best interlayer is the 6 nm thick aluminum film.

  17. Influence of various thickness metallic interlayers on opto-electric and mechanical properties of AZO thin films on PET substrates

    Science.gov (United States)

    Chang, R. C.; Li, T. C.; Lin, C. W.

    2012-02-01

    Various thickness metallic interlayers to improve the opto-electric and mechanical properties of aluminum-doped zinc oxide (AZO) thin films deposited on flexible polyethylene terephtalate (PET) substrates are studied. The effects of the interlayers on the resistance and transmittance of the AZO thin films are discussed. The result shows that the metallic interlayers effectively improve the electric resistance but reduce the optical transmittance of the AZO thin films. These phenomena become more obvious as the interlayer thickness increases. However, the AZO with an aluminum interlayer still behaves an acceptable transmittance. Moreover, mechanical tests indicate that the aluminum interlayer increases the hardness and modulus, and reduce the residual stress of the AZO thin films. In contrast, the silver and copper interlayers decrease the AZO's mechanical properties. Comparing to those without any interlayer, the results show that the best interlayer is the 6 nm thick aluminum film.

  18. Investigation of photocatalytic activity of titanium dioxide deposited on metallic substrates by DC magnetron sputtering

    DEFF Research Database (Denmark)

    Daviðsdóttir, Svava; Canulescu, Stela; Dirscherl, Kai;

    2013-01-01

    The photocatalytic properties of titanium dioxide (TiO2) coating in the anatase crystalline structure deposited on aluminium AA1050 alloy and stainless steel S316L substrates were investigated. The coating was prepared by DC magnetron sputtering. The microstructure and surface morphology...

  19. Oxidative damage to collagen and related substrates by metal ion/hydrogen peroxide systems

    DEFF Research Database (Denmark)

    Hawkins, C L; Davies, Michael Jonathan

    1997-01-01

    (II)-H2O2, evidence has been obtained for: i) altered sites of attack and fragmentation, ii) C-terminal decarboxylation, and iii) hydrogen abstraction at N-terminal alpha-carbon sites. This altered behaviour is believed to be due to the binding of copper ions to some substrates and hence site...

  20. Metal-free magnetic conductor substrates for placement-immune antenna assemblies

    Science.gov (United States)

    Eubanks, Travis Wayne; Loui, Hung; McDonald, Jacob Jeremiah

    2015-09-29

    A magnetic conductor substrate produced for mounting to an antenna includes a sheet of dielectric lattice material having a length, a width and a thickness that is less than the length and less than the width. Within the sheet of dielectric lattice material is disposed an array of dielectric elements.

  1. Bottom-up synthesis of ordered metal/oxide/metal nanodots on substrates for nanoscale resistive switching memory

    Science.gov (United States)

    Han, Un-Bin; Lee, Jang-Sik

    2016-05-01

    The bottom-up approach using self-assembled materials/processes is thought to be a promising solution for next-generation device fabrication, but it is often found to be not feasible for use in real device fabrication. Here, we report a feasible and versatile way to fabricate high-density, nanoscale memory devices by direct bottom-up filling of memory elements. An ordered array of metal/oxide/metal (copper/copper oxide/copper) nanodots was synthesized with a uniform size and thickness defined by self-organized nanotemplate mask by sequential electrochemical deposition (ECD) of each layer. The fabricated memory devices showed bipolar resistive switching behaviors confirmed by conductive atomic force microscopy. This study demonstrates that ECD with bottom-up growth has great potential to fabricate high-density nanoelectronic devices beyond the scaling limit of top-down device fabrication processes.

  2. Bottom-up synthesis of ordered metal/oxide/metal nanodots on substrates for nanoscale resistive switching memory

    Science.gov (United States)

    Han, Un-Bin; Lee, Jang-Sik

    2016-01-01

    The bottom-up approach using self-assembled materials/processes is thought to be a promising solution for next-generation device fabrication, but it is often found to be not feasible for use in real device fabrication. Here, we report a feasible and versatile way to fabricate high-density, nanoscale memory devices by direct bottom-up filling of memory elements. An ordered array of metal/oxide/metal (copper/copper oxide/copper) nanodots was synthesized with a uniform size and thickness defined by self-organized nanotemplate mask by sequential electrochemical deposition (ECD) of each layer. The fabricated memory devices showed bipolar resistive switching behaviors confirmed by conductive atomic force microscopy. This study demonstrates that ECD with bottom-up growth has great potential to fabricate high-density nanoelectronic devices beyond the scaling limit of top-down device fabrication processes. PMID:27157385

  3. Three-dimensional noble-metal nanostructure: A new kind of substrate for sensitive, uniform, and reproducible surface-enhanced Raman scattering

    International Nuclear Information System (INIS)

    Surface-enhanced Raman spectroscopy (SERS) is a powerful vibrational spectroscopy technique for highly sensitive structural detection of low concentration analyte. The SERS activities largely depend on the topography of the substrate. In this review, we summarize the recent progress in SERS substrate, especially focusing on the three-dimensional (3D) noble-metal substrate with hierarchical nanostructure. Firstly, we introduce the background and general mechanism of 3D hierarchical SERS nanostructures. Then, a systematic overview on the fabrication, growth mechanism, and SERS property of various noble-metal substrates with 3D hierarchical nanostructures is presented. Finally, the applications of 3D hierarchical nanostructures as SERS substrates in many fields are discussed. (invited review — international conference on nanoscience and technology, china 2013)

  4. Corrosion Monitoring of Flexible Metallic Substrates for Dye-Sensitized Solar Cells

    Directory of Open Access Journals (Sweden)

    Trystan Watson

    2013-01-01

    Full Text Available Two techniques for monitoring corrosion within a dye-sensitized solar cell (DSC system are presented, which enable continuous, high sensitivity, in situ measurement of electrolyte breakdown associated with DSCs fabricated on metals. The first method uses UV/Vis reflectance spectrophotometry in conjunction with encapsulation cells, which incorporate a 25 μm thick electrolyte layer, to provide highly resolved triiodide absorption data. The second method uses digital image capture to extract colour intensity data. Whilst the two methods provide very similar kinetic data on corrosion, the photographic method has the advantage that it can be used to image multiple samples in large arrays for rapid screening and is also relatively low cost. This work shows that the triiodide electrolyte attacks most metals that might be used for structural applications. Even a corrosion resistant metal, such as aluminium, can be induced to corrode through surface abrasion. This result should be set in the context with the finding reported here that certain nitrogen containing heterocyclics used in the electrolyte to enhance performance also act as corrosion inhibitors with significant stabilization for metals such as iron. These new techniques will be important tools to help develop corrosion resistant metal surfaces and corrosion inhibiting electrolytes for use in industrial scale devices.

  5. Phytochelatin-metal(loid) transport into vacuoles shows different substrate preferences in barley and Arabidopsis.

    Science.gov (United States)

    Song, Won-Yong; Mendoza-Cózatl, David G; Lee, Youngsook; Schroeder, Julian I; Ahn, Sang-Nag; Lee, Hyun-Sook; Wicker, Thomas; Martinoia, Enrico

    2014-05-01

    Cadmium (Cd) and arsenic (As) are toxic to all living organisms, including plants and humans. In plants, Cd and As are detoxified by phytochelatins (PCs) and metal(loid)-chelating peptides and by sequestering PC-metal(loid) complexes in vacuoles. Consistent differences have been observed between As and Cd detoxification. Whereas chelation of Cd by PCs is largely sufficient to detoxify Cd, As-PC complexes must be sequestered into vacuoles to be fully detoxified. It is not clear whether this difference in detoxification pathways is ubiquitous among plants or varies across species. Here, we have conducted a PC transport study using vacuoles isolated from Arabidopsis and barley. Arabidopsis vacuoles accumulated low levels of PC2 -Cd, and vesicles from yeast cells expressing either AtABCC1 or AtABCC2 exhibited negligible PC2 -Cd transport activity compared with PC2 -As. In contrast, barley vacuoles readily accumulated comparable levels of PC2 -Cd and PC2 -As. PC transport in barley vacuoles was inhibited by vanadate, but not by ammonium, suggesting the involvement of ABC-type transporters. Interestingly, barley vacuoles exhibited enhanced PC2 transport activity when essential metal ions, such as Zn(II), Cu(II) and Mn(II), were added to the transport assay, suggesting that PCs might contribute to the homeostasis of essential metals and detoxification of non-essential toxic metal(loid)s.

  6. Effects of metallic nanoparticle doped flux on the interfacial intermetallic compounds between lead-free solder ball and copper substrate

    Energy Technology Data Exchange (ETDEWEB)

    Sujan, G.K., E-mail: sgkumer@gmail.com; Haseeb, A.S.M.A., E-mail: haseeb@um.edu.my; Afifi, A.B.M., E-mail: amalina@um.edu.my

    2014-11-15

    Lead free solders currently in use are prone to develop thick interfacial intermetallic compound layers with rough morphology which are detrimental to the long term solder joint reliability. A novel method has been developed to control the morphology and growth of intermetallic compound layers between lead-free Sn–3.0Ag–0.5Cu solder ball and copper substrate by doping a water soluble flux with metallic nanoparticles. Four types of metallic nanoparticles (nickel, cobalt, molybdenum and titanium) were used to investigate their effects on the wetting behavior and interfacial microstructural evaluations after reflow. Nanoparticles were dispersed manually with a water soluble flux and the resulting nanoparticle doped flux was placed on copper substrate. Lead-free Sn–3.0Ag–0.5Cu solder balls of diameter 0.45 mm were placed on top of the flux and were reflowed at a peak temperature of 240 °C for 45 s. Angle of contact, wetting area and interfacial microstructure were studied by optical microscopy, field emission scanning electron microscopy and energy-dispersive X-ray spectroscopy. It was observed that the angle of contact increased and wetting area decreased with the addition of cobalt, molybdenum and titanium nanoparticles to flux. On the other hand, wettability improved with the addition of nickel nanoparticles. Cross-sectional micrographs revealed that both nickel and cobalt nanoparticle doping transformed the morphology of Cu{sub 6}Sn{sub 5} from a typical scallop type to a planer one and reduced the intermetallic compound thickness under optimum condition. These effects were suggested to be related to in-situ interfacial alloying at the interface during reflow. The minimum amount of nanoparticles required to produce the planer morphology was found to be 0.1 wt.% for both nickel and cobalt. Molybdenum and titanium nanoparticles neither appear to undergo alloying during reflow nor have any influence at the solder/substrate interfacial reaction. Thus, doping

  7. 以光辅助MOCVD法在有取向Ni衬底及LAO单晶衬底上制备YBCO外延膜的比较研究%Comparative Study of YBCO Films Grown on Biaxially Textured Ni Substrate and LAO Substrate by Photo-assisted Metal Organic Chemical Vapor Deposition

    Institute of Scientific and Technical Information of China (English)

    李善文; 李伟; 李国兴; 张宝林; 周本初; 陶伯万; 高忠民

    2013-01-01

    采用光辅助金属有机物化学气相沉积(MOCVD)法,在生长有CeO2/YSZ/Y2 O3(YSZ为Y稳定的ZrO2)缓冲层的双轴取向Ni衬底上进行了YBa2 Cu3 O7_x(YBCO)外延膜生长,并与LaAlO3(100)[LAO(100)]单晶衬底上的YBCO外延膜生长进行了对比.发现在Ni衬底上c轴取向YBCO外延膜的生长温度比LAO衬底上的生长温度低约30℃,但生长速度更快.经分析认为,这种差别主要是由于Ni衬底的热导率比LAO衬底高造成的.Ni衬底及LAO衬底上生长的c轴取向YBCO外延膜的超导极限电流密度(Jc)分别约为0.5 MA/cm2及1.8 MA/cm2.%A comparative study of YBa2Cu307-χ( YBCO) films grown on biaxially textured Ni substrates [using CeO2/YSZ/Y2O3(YSZ is Y stabilized ZrO2) as buffer layers] and LaA103( 100) [LAO( 100) ] substrates by photo-assisted metal organic chemical vapor deposition ( MOCVD) was carried out. It is found that the growing temperature of YBCO film grown on Ni substrate is lower about 30℃ than that on LAO substrate. Besides, the growth rate on Ni substrate is higher than that on LAO. The phenomena can be explained by the fact that the thermal conduction of Ni substrate is better than LAO. The critical superconducting current density Jc of YBCO films grown on Ni substrate and LAO substrate are about 0. 5 and 1. 8 MA/cm2, respectively.

  8. Chemical and physical erosion of carbon and metallic substrates containing lithium during low-energy deuterium ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Nieto-Perez, M., E-mail: mnietop@ipn.mx [CICATA-IPN, Cerro Blanco 141 Cimatario, Queretaro, QRO 76090 (Mexico); Allain, J.P., E-mail: allain@purdue.edu [Purdue University, West Lafayette, IN 47907 (United States); Birck Nanotechnology Center, Discovery Park, Purdue University, West Lafayette, IN 47907 (United States); Heim, B.; Taylor, C.N. [Purdue University, West Lafayette, IN 47907 (United States)

    2011-08-01

    Lithium deposition on Grade ATJ graphite substrates and metallic substrates under low-energy D{sub 2}{sup +} irradiation are compared. Transient and steady-state release rate of ejected species are measured for non-lithiated and lithiated ATJ graphite surfaces. Irradiation fluxes of order 10{sup 15} cm{sup -2} s{sup -1} exposed samples while ejected species are monitored with a line-of-sight quadrupole mass spectrometer. For lithiated ATJ graphite the dominant D emission channels are D{sub 2}O and HDO and indicate the importance of lithium, water breakdown at the surface and oxide formation on desorption dynamics. Exponential decay in the transient release rate of ejected species is found for lithiated ATJ graphite, indicating that near surface super-saturation of D atoms at the vacuum interface in the presence of lithium atoms. In situ X-ray photoelectron spectroscopy (XPS) surface analysis corroborates this result. Lithium-coatings on Mo substrates demonstrate high sputtering rates; however depleted Li/Mo surfaces are quickly recovered when surfaces are heated to temperatures near 500 K.

  9. Growth of ZnO nanowires through thermal oxidation of metallic zinc films on CdTe substrates

    Energy Technology Data Exchange (ETDEWEB)

    Martinez, O., E-mail: oscar@fmc.uva.es [Optronlab Group, Dpto. Fisica Materia Condensada, Edificio I-D, Universidad de Valladolid, Paseo de Belen 1, 47011, Valladolid (Spain); Hortelano, V.; Jimenez, J. [Optronlab Group, Dpto. Fisica Materia Condensada, Edificio I-D, Universidad de Valladolid, Paseo de Belen 1, 47011, Valladolid (Spain); Plaza, J.L.; Dios, S. de; Olvera, J.; Dieguez, E. [Laboratorio de Crecimiento de Cristales, Departamento de Fisica de Materiales, Facultad de Ciencias, Universidad Autonoma de Madrid, Cantoblanco, 28049 Madrid (Spain); Fath, R.; Lozano, J.G.; Ben, T.; Gonzalez, D. [Dpto. Ciencia de los Materiales e Ingenieria Metalurgica y Q.I., Facultad de Ciencias, Apdo. 40, 11510 Puerto Real, Cadiz (Spain); Mass, J. [Dpto. de Fisica, Universidad del Norte, Km.5 Via Puerto Colombia, Barranquilla (Colombia)

    2011-04-28

    Research highlights: > ZnO nanowires grown from thermal Zn oxidation. > TEM reveals high quality thin nanowires several microns long. > New phase formation at long oxidation time. > Good spectroscopic properties measured by Raman, Photo and Cathodoluminsecence spectroscopies. - Abstract: <112-bar 0> wurtzite ZnO nanowires (NWs) have been obtained by oxidizing in air at 500 deg. C thermally evaporated Zn metal films deposited onto CdTe substrates. The presence of Cd atoms from the substrate on the ZnO seeding layer and NWs seems to affect the growth of the NWs. The effects of the oxidation time on the structural and optical properties of the NWs are described in detail. It is shown that the NWs density decreases and their length increases when increasing the oxidation time. Thicker Zn layers result in thinner and longer ZnO NWs. Very long oxidation times also lead to the formation of a new CdO phase which is related to the partial destruction and quality reduction of the NWs. The possible process for ZnO NW formation on CdTe substrates is discussed.

  10. Roll-to-Roll Encapsulation of Metal Nanowires between Graphene and Plastic Substrate for High-Performance Flexible Transparent Electrodes.

    Science.gov (United States)

    Deng, Bing; Hsu, Po-Chun; Chen, Guanchu; Chandrashekar, B N; Liao, Lei; Ayitimuda, Zhawulie; Wu, Jinxiong; Guo, Yunfan; Lin, Li; Zhou, Yu; Aisijiang, Mahaya; Xie, Qin; Cui, Yi; Liu, Zhongfan; Peng, Hailin

    2015-06-10

    Transparent conductive film on plastic substrate is a critical component in low-cost, flexible, and lightweight optoelectronics. Industrial-scale manufacturing of high-performance transparent conductive flexible plastic is needed to enable wide-ranging applications. Here, we demonstrate a continuous roll-to-roll (R2R) production of transparent conductive flexible plastic based on a metal nanowire network fully encapsulated between graphene monolayer and plastic substrate. Large-area graphene film grown on Cu foil via a R2R chemical vapor deposition process was hot-laminated onto nanowires precoated EVA/PET film, followed by a R2R electrochemical delamination that preserves the Cu foil for reuse. The encapsulated structure minimized the resistance of both wire-to-wire junctions and graphene grain boundaries and strengthened adhesion of nanowires and graphene to plastic substrate, resulting in superior optoelectronic properties (sheet resistance of ∼8 Ω sq(-1) at 94% transmittance), remarkable corrosion resistance, and excellent mechanical flexibility. With these advantages, long-cycle life flexible electrochromic devices are demonstrated, showing up to 10000 cycles. PMID:26020567

  11. Cube-textured metal substrates for reel-to-reel processing of coated conductors

    DEFF Research Database (Denmark)

    Wulff, Anders Christian

    , migrating boundaries were found to abandon grooves and generate grooves at new positions. Despite the observed changes in the extent of grain boundary grooving, the mean surface roughness was almost identical before and after the additional annealing. Microstructure, texture, hardness and magnetic....... It was observed that the initial mean surface roughness decreased after annealing except after very ne polishing. Additionally, the roughness of the buer layers were found to increase slightly for the ne polished substrates. Grain boundary grooving was observed to impose a lower limit for the mean surface...... properties have been studied in a series of new Ni-Cu-W substrates. Adding 5 at.% copper to Ni-5at.%W was observed to substantially decrease the Curie temperature and the saturation mass magnetisation without signicantly modifying the microstructure and texture compared with Ni-5at.%W. The hardness...

  12. Metallic substrate materials for thin film oxygen transport membranes for application in a fossil power plant

    Energy Technology Data Exchange (ETDEWEB)

    Xing, Y.; Baumann, S.; Sebold, D.; Meulenberg, W.A.; Stoever, D. [Forschungszentrum Juelich GmbH (DE). Inst. fuer Energieforschung (IEF) - IEF-1 Materials Synthesis and Processing

    2010-07-01

    La{sub 0.58}Sr{sub 0.4}CO{sub 0.2}Fe{sub 0.8}O{sub 3-{delta}} (LSCF58428) and Ba{sub 0.5}Sr{sub 0.5}CO{sub 0.8}Fe{sub 3-{delta}} (BSCF5582) exhibit high oxygen permeability due to their high ionic and electronic conductivity. For this reason they are under discussion for application in oxygen transport membranes (OTMs) in zero-emission power plants using oxyfuel technology. A thin film membrane which can increase the oxygen flux is beneficial and a structural substrate is required. Two types of Ni-base alloys were studied as substrate material candidates with a number of advantages, such as high strength, high temperature stability, easy joining and similar thermal expansion coefficient to the selected perovskite materials. Chemical compositions and thermal expansion coefficients of Ni-base alloys were measured in this study. LSCF58428 and BSCF5582 layers were screen printed on Ni-based alloys and co-fired at high temperature in air. The microstructure and element analysis of samples were characterized by scanning electron microscopy (SEM and EDX). A Ni-base alloy, MCrAlY, with a high Al content was the most suitable substrate material, and showed better chemical compatibility with perovskite materials at high temperature than Hastelloy X, which is a chromia-forming Ni-base alloy. A reaction occurred between Sr in the perovskite and the alumina surface layers on MCr-AlY. However, the reaction zone did not increase in thickness during medium-term annealing at 800 C in air. Hence, it is expected that this reaction will not prevent the application of MCr-AlY as a substrate material. (orig.)

  13. Towards an electroless deposition of gold on metallic substrates using ionic liquids as electrolytes

    OpenAIRE

    Sá, A. I. Correia de; Quaresma, S.; Eugénio, S.; Rangel, C. M.; Vilar, Rui

    2010-01-01

    Recent research has suggested a number of applications for gold in fuel cells and related hydrogen fuel processing, which include coatings for light weight corrosion resistance bipolar plates and the incorporation of gold as catalyst to provide improvements in electrode conductivity, among others. This paper reports on the electroless deposition of gold on copper substrates from a HAuCl4.3H2O solution in 1-butyl-1-methylpyrrolidinium dicyanamide (BMP-DCA), in normal atmospheric conditions. Th...

  14. Laser engineered multilayer coating of biphasic calcium phosphate/titanium nanocomposite on metal substrates.

    Science.gov (United States)

    Zhang, Martin Yi; Ye, Chang; Erasquin, Uriel Joseph; Huynh, Toan; Cai, Chengzhi; Cheng, Gary J

    2011-02-01

    In this work, laser coating of biphasic calcium phosphate/titanium (BCP/Ti) nanocomposite on Ti-6Al-4 V substrates was developed. A continuous wave neodymium-doped yttrium aluminium garnet (Nd:YAG) laser was used to form a robust multilayer of BCP/Ti nanocomposite starting from hydroxyapatite and titanium nanoparticles. In this process, low power coating is realized because of the strong laser-nanoparticle interaction and good sinterability of nanosized titanium. To guide the optimization of laser processing conditions for the coating process, a multiphysics model coupling electromagnetic module with heat transfer module was developed. This model was validated by laser coating experiments. Important features of the coated samples, including microstructures, chemical compositions, and interfacial bonding strength, were characterized. We found that a multilayer of BCP, consisting of 72% hydroxyapatite (HA) and 28% beta-tricalcium phosphate (β-TCP), and titanium nanocomposite was formed on Ti-6Al-4 V substrates. Significantly, the coating/substrate interfacial bonding strength was found to be two times higher than that of the commercial plasma sprayed coatings. Preliminary cell culture studies showed that the resultant BCP/Ti nanocomposite coating supported the adhesion and proliferation of osteoblast-like UMR-106 cells. PMID:21207950

  15. Liquid phase deposition methods monitoring techniques influence for solid substrates and thin metal oxide films properties

    Directory of Open Access Journals (Sweden)

    A.V. Valiulis

    2007-09-01

    Full Text Available Purpose: Liquid phase deposition (LPD method is a useful method to create thin oxide films from aqueous solutions under ambient conditions. Deposition of ceramic layers on polymers is a technological challenge because of polymer sensitivity to chemicals and high temperature processing.Design/methodology/approach: The work attempts to elucidate the role of the substrate during LPD of TiO2 films by using Kapton with different types of surface treatments.Findings: Was found that small differences in pH, temperature, and solution composition can lead to dramatic differences in the film’s crystallinity, adherence, and growth rate. Thin films are very smooth, uniform with small amount of cracks.Research limitations/implications: Independent of technique and substrate, film thicker than a few hundred nm exhibited cracks, attributed to stresses that result during drying of the film.Originality/value: Techniques for monitoring the surface chemistry of the solid substrate and the deposited ceramic film have been developed.

  16. Application of carbohydrate polymers as corrosion inhibitors for metal substrates in different media: A review.

    Science.gov (United States)

    Umoren, Saviour A; Eduok, Ubong M

    2016-04-20

    Naturally occurring polysaccharides are biopolymers existing as products of biochemical processes in living systems. A wide variety of them have been employed for various material applications; as binders, coatings, drug delivery, corrosion inhibitors etc. This review describes the application of some green and benign carbohydrate biopolymers and their derivatives for inhibition of metal corrosion. Their modes and mechanisms of protection have also been described as directly related to their macromolecular weights, chemical composition and their unique molecular and electronic structures. For instance, cellulose and chitosan possess free amine and hydroxyl groups capable of metal ion chelation and their lone pairs of electrons are readily utilized for coordinate bonding at the metal/solution interface. Some of the carbohydrate polymers reviewed in this work are either pure or modified forms; their grafted systems and nanoparticle composites with multitude potentials for metal protection applications have also been highlighted. Few inhibitors grafted to introduce more compact structures with polar groups capable of increasing the total energy of the surface have also been mentioned. Exudate gums, carboxymethyl and hydroxyethyl cellulose, starch, pectin and pectates, substituted/modified chitosans, carrageenan, dextrin/cyclodextrins and alginates have been elaborately reviewed, including the effects of halide additives on their anticorrosion performances. Aspects of computational/theoretical approach to corrosion monitoring have been recommended for future studies. This non-experimental approach to corrosion could foster a better understanding of the corrosion inhibition processes by correlating actual inhibition mechanisms with molecular structures of these carbohydrate polymers.

  17. Application of carbohydrate polymers as corrosion inhibitors for metal substrates in different media: A review.

    Science.gov (United States)

    Umoren, Saviour A; Eduok, Ubong M

    2016-04-20

    Naturally occurring polysaccharides are biopolymers existing as products of biochemical processes in living systems. A wide variety of them have been employed for various material applications; as binders, coatings, drug delivery, corrosion inhibitors etc. This review describes the application of some green and benign carbohydrate biopolymers and their derivatives for inhibition of metal corrosion. Their modes and mechanisms of protection have also been described as directly related to their macromolecular weights, chemical composition and their unique molecular and electronic structures. For instance, cellulose and chitosan possess free amine and hydroxyl groups capable of metal ion chelation and their lone pairs of electrons are readily utilized for coordinate bonding at the metal/solution interface. Some of the carbohydrate polymers reviewed in this work are either pure or modified forms; their grafted systems and nanoparticle composites with multitude potentials for metal protection applications have also been highlighted. Few inhibitors grafted to introduce more compact structures with polar groups capable of increasing the total energy of the surface have also been mentioned. Exudate gums, carboxymethyl and hydroxyethyl cellulose, starch, pectin and pectates, substituted/modified chitosans, carrageenan, dextrin/cyclodextrins and alginates have been elaborately reviewed, including the effects of halide additives on their anticorrosion performances. Aspects of computational/theoretical approach to corrosion monitoring have been recommended for future studies. This non-experimental approach to corrosion could foster a better understanding of the corrosion inhibition processes by correlating actual inhibition mechanisms with molecular structures of these carbohydrate polymers. PMID:26876859

  18. Plasma surface oxidation of 316L stainless steel for improving adhesion strength of silicone rubber coating to metal substrate

    Energy Technology Data Exchange (ETDEWEB)

    Latifi, Afrooz, E-mail: afroozlatifi@yahoo.com [Department of Biomaterials, Biomedical Engineering Faculty, Science and Research Branch, Islamic Azad University, Tehran (Iran, Islamic Republic of); Imani, Mohammad [Novel Drug Delivery Systems Dept., Iran Polymer and Petrochemical Institute, P.O. Box 14965/115, Tehran (Iran, Islamic Republic of); Khorasani, Mohammad Taghi [Biomaterials Dept., Iran Polymer and Petrochemical Institute, P.O. Box 14965/159, Tehran (Iran, Islamic Republic of); Daliri Joupari, Morteza [Animal and Marine Biotechnology Dept., National Institute of Genetic Engineering and Biotechnology, P.O. Box 14965/161, Tehran (Iran, Islamic Republic of)

    2014-11-30

    Highlights: • Stainless steel 316L was surface modified by plasma surface oxidation (PSO) and silicone rubber (SR) coating. • On the PSO substrates, concentration of oxide species was increased ca. 2.5 times comparing to non-PSO substrates. • The surface wettability was improved to 12.5°, in terms of water contact angle, after PSO. • Adhesion strength of SR coating on the PSO substrates was improved by more than two times comparing to non-PSO ones. • After pull-off test, the fractured area patterns for SR coating were dependent on the type of surface modifications received. - Abstract: Stainless steel 316L is one of the most widely used materials for fabricating of biomedical devices hence, improving its surface properties is still of great interest and challenging in biomaterial sciences. Plasma oxidation, in comparison to the conventional chemical or mechanical methods, is one of the most efficient methods recently used for surface treatment of biomaterials. Here, stainless steel specimens were surface oxidized by radio-frequency plasma irradiation operating at 34 MHz under pure oxygen atmosphere. Surface chemical composition of the samples was significantly changed after plasma oxidation by appearance of the chromium and iron oxides on the plasma-oxidized surface. A wettable surface, possessing high surface energy (83.19 mN m{sup −1}), was observed after plasma oxidation. Upon completion of the surface modification process, silicone rubber was spray coated on the plasma-treated stainless steel surface. Morphology of the silicone rubber coating was investigated by scanning electron microscopy (SEM). A uniform coating was formed on the oxidized surface with no delamination at polymer–metal interface. Pull-off tests showed the lowest adhesion strength of coating to substrate (0.12 MPa) for untreated specimens and the highest (0.89 MPa) for plasma-oxidized ones.

  19. Tunable surface plasmon polaritons in metal-strip waveguides with magnetized semiconductor substrates in Voigt configuration

    Science.gov (United States)

    Mathew, Gishamol; Mathew, Vincent

    2012-05-01

    The properties of surface plasmon polaritons (SPPs) in a magnetically tunable strip waveguide geometry comprising of a metal film of finite width deposited on a magnetized semiconductor and covered by an isotropic dielectric material were studied in Voigt configuration. The method of lines was used to compute the dispersion relation of fundamental modes, and the dependence of the propagation constant on metal film dimensions, material parameters and biasing magnetic field was considered. The bounded SPPs are nonreciprocal with respect to the direction of the biasing magnetic field, producing a nonreciprocal phase shift of the order of 2-18 rad mm-1 at a wavelength of excitation 1.55 μm. Moreover, controlled propagation of SPP modes and their effective tuning are possible in this strip geometry, which enables the design and development of tunable optoelectronic devices.

  20. Ultra-Thin Deformable Silicon Substrates with Lateral Segmentation and Flexible Metal Interconnect

    OpenAIRE

    Zoumpouidis, T.; Wang, L.; Bartek, M.; Jansen, K.M.B.; Ernst, L.J.

    2007-01-01

    Our progress in developing technology modules for deformable single-crystalline-silicon electronics is presented in this contribution. Additional deformability/reliability is accomplished by modifications of the previously reported ultra-thin and flexible CIRCONFLEX technology (1). The flexibility is added in the last steps of the process flow using a combination of lateral segmentation and flexible metal interconnects. The post-processing nature of the added mechanical flexibility is thought...

  1. Metal nanoparticle-enhanced room temperature phosphorescence of diiodofluorescein on the filter paper substrate

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    Metal-enhanced room temperature phosphorescence of diiodofluorescein was first observed on filter paper surface.The phosphorescence intensity is 2.5-fold brighter from diiodofluorescein on silver nanoparticles-deposited filter paper as compared with an identical control sample without silver nanoparticles.Furthermore,enhanced absorption was also observed for the same system.Our findings suggest that both singlet and triplet states can couple to surface plasmons and enhance phosphorescence quantum yields ...

  2. Effect of substrate concentration on the bioleaching of heavy metals from sewage sludge

    Institute of Scientific and Technical Information of China (English)

    CHEN Ying-xu; HUA Yu-mei; ZHANG Shao-hui

    2004-01-01

    The effect of elemental sulfur concentration on bioleaching of Cu, Zn and Pb and loss of fertilizer value from sewage sludge was investigated in flasks by batch experiments. The results showed that the ultimate pH of sludges with 3-5 g/L of sulfur added was about 1.3 and the production of SO42- had good correlation with the elemental sulfur concentration. The sensitivity of removal efficiency of metals to sulfur concentration was: Pb>Cu>Zn. The sulfur concentration except for 3-5 g/L had significant effect on the solubilization of Cu, Pb and Zn. The highest solubilization efficiency for sludge with 3 g/L of sulfur was 87.86% for Cu, 32.72% for Pb and 92.14% for Zn, which could make the treated sludge easily meet the metal limitations for land application. The sulfur concentration of 3 g/L was enough for the solubilization of all three heavy metals. The influence of sulfur concentration on solubilization of total nitrogen and potassium from sludge was negligible, but that on solublization of total phosphorus was of great importance. The loss of nitrogen, phosphorus and potassium of sludge with 3 g/L of sulfur by bioleaching was 38.2%, 52.1% and 42.8% respectively, and the sludge still remained satisfactory fertilizer value after bioleaching.

  3. Influence of etching AlN buffer layer on the surface roughening of N-p olar n-GaN grown on Si substrate%刻蚀AlN缓冲层对硅衬底N极性n-GaN表面粗化的影响∗

    Institute of Scientific and Technical Information of China (English)

    王光绪; 陈鹏; 刘军林; 吴小明; 莫春兰; 全知觉; 江风益

    2016-01-01

    研究了等离子体刻蚀AlN缓冲层对硅衬底N极性n-GaN表面粗化行为的影响。实验结果表明,表面AlN缓冲层的状态对N极性n-GaN的粗化行为影响很大,采用等离子体刻蚀去除一部分表面AlN缓冲层即可以有效提高N极性n-GaN在KOH溶液中的粗化效果, AlN缓冲层未经任何刻蚀处理的样品粗化速度过慢,被刻蚀完全去除AlN缓冲层的样品容易出现粗化过头的现象。经X射线光电子能谱分析可知,等离子体刻蚀能够提高样品表面AlN缓冲层Al 2p的电子结合能,使得样品表面费米能级向导带底靠近,原子含量测试表明样品表面产生了大量的N空位, N空位提供电子,使得材料表面费米能级升高,这降低了KOH溶液和样品表面之间的肖特基势垒,从而有利于表面粗化的进行。通过等离子体刻蚀掉表面部分AlN缓冲层,改善了N极性n-GaN在KOH溶液中的粗化效果,明显提升了对应发光二级管器件的出光功率。%Light extraction efficiency of thin-film GaN-based light-emitting-diode (LED) chip can be effectively improved by surface roughening. The film transfer is an indispensable process in the manufacture of thin-film LED chip, which means transferring the LED film from the growth substrate to a new substrate, and then removing the growth substrate. After the growth substrate is removed, the buffer layer is used to cushion the mismatch between the substrate and the n-GaN exposed, which has a significant influence on the roughening behavior of n-GaN. Unlike the GaN buffer layer grown on sapphire substrate, AlN buffer layer is usually used when n-GaN is grown on Si substrate. In this paper, the surface treatment of the AlN buffer layer by reactive ion etching (RIE) is used to improve the surface roughening effect of N-polar n-GaN grown on the silicon substrate in the hot alkali solution (85 ◦C, 20% KOH mass concentration of solution), and the mechanism of the influence

  4. Influence of Temporary Cements on the Bond Strength of Self-Adhesive Cement to the Metal Coronal Substrate.

    Science.gov (United States)

    Peixoto, Raniel Fernandes; De Aguiar, Caio Rocha; Jacob, Eduardo Santana; Macedo, Ana Paula; De Mattos, Maria da Gloria Chiarello; Antunes, Rossana Pereira de Almeida

    2015-01-01

    This research evaluated the influence of temporary cements (eugenol-containing [EC] or eugenol-free [EF]) on the tensile strength of Ni-Cr copings fixed with self-adhesive resin cement to the metal coronal substrate. Thirty-six temporary crowns were divided into 4 groups (n=9) according to the temporary cements: Provy, Dentsply (eugenol-containing), Temp Cem, Vigodent (eugenol-containing), RelyX Temp NE, 3M ESPE (eugenol-free) and Temp Bond NE, Kerr Corp (eugenol-free). After 24 h of temporary cementation, tensile strength tests were performed in a universal testing machine at a crosshead speed of 0.5 mm/min and 1 kN (100 kgf) load cell. Afterwards, the cast metal cores were cleaned by scraping with curettes and air jet. Thirty-six Ni-Cr copings were cemented to the cast metal cores with self-adhesive resin cement (RelyX U200, 3M ESPE). Tensile strength tests were performed again. In the temporary cementation, Temp Bond NE (12.91 ± 2.54) and Temp Cem (12.22 ± 2.96) presented the highest values of tensile strength and were statistically similar to each other (p>0.05). Statistically significant difference (pcementation of Ni-Cr copings with self-adhesive resin cement. In addition, Temp Cem (120.68 ± 48.27) and RelyX Temp NE (103.04 ± 26.09) showed intermediate tensile strength values. In conclusion, the Provy eugenol-containing temporary cement was associated with the highest bond strength among the resin cements when Ni-Cr copings were cemented to cast metal cores. However, the eugenol cannot be considered a determining factor in increased bond strength, since the other tested cements (1 eugenol-containing and 2 eugenol-free) were similar. PMID:26963209

  5. Chemical approach to the deposition of textured CeO2 buffer layers based on sol gel dip coating

    International Nuclear Information System (INIS)

    The widespread use of vacuum techniques for the development of coated conductors, in which buffer and superconducting (REBa2Cu3O7-δ) layers are deposited epitaxially on a substrate, is well established in the research environment. However, obtaining uninterrupted deposition at high speed, increasing flexibility in composition and in film thickness and attaining independence of geometric constraints are areas in which many vacuum techniques will need sustained development in order to answer industrial demands. This work describes the deposition of textured CeO2 buffer layers based on sol gel dip coating under atmospheric environment and from aqueous precursor materials. Research has been performed towards the deposition of CeO2-buffer layers using the amorphous citrate method on sapphire substrates and Ni-W foils. Coating is performed using the dip-coating technique, which allows extension to a continuous system. The withdrawal speed and the thermal treatment have been optimised in order to obtain highly oriented (001) layers exhibiting a smooth and crack-free morphology both on ceramic and metallic substrates. From the results it was concluded that sintering atmosphere and sintering temperature play a crucial role in the growth mechanism. This study describes the structural and morphological analysis of the thin layer with special attention to the difference between ceramic and metallic substrates. (orig.)

  6. Tension assisted metal transfer of graphene for Schottky diodes onto wafer scale substrates

    Science.gov (United States)

    Lee, Jooho; Lee, Su Chan; Kim, Yongsung; Heo, Jinseong; Lee, Kiyoung; Lee, Dongwook; Kim, Jaekwan; Lee, Sunghee; Lee, Chang Seung; Nam, Min Sik; Jun, Seong Chan

    2016-02-01

    We developed an effective graphene transfer method for graphene/silicon Schottky diodes on a wafer as large as 6 inches. Graphene grown on a large scale substrate was passivated and sealed with a gold layer, protecting graphene from any possible contaminant and keeping good electrical contact. The Au/graphene was transferred by the tension-assisted transfer process without polymer residues. The gold film itself was used directly as the electrodes of a Schottky diode. We demonstrated wafer-scale integration of graphene/silicon Schottky diode using the proposed transfer process. The transmission electron microscopy analysis and relatively low ideality factor of the diodes indicated fewer defects on the interface than those obtained using the conventional poly(methyl methacrylate)-assisted transfer method. We further demonstrated gas sensors as an application of graphene Schottky diodes.

  7. Tension assisted metal transfer of graphene for Schottky diodes onto wafer scale substrates.

    Science.gov (United States)

    Lee, Jooho; Lee, Su Chan; Kim, Yongsung; Heo, Jinseong; Lee, Kiyoung; Lee, Dongwook; Kim, Jaekwan; Lee, Sunghee; Lee, Chang Seung; Nam, Min Sik; Jun, Seong Chan

    2016-02-19

    We developed an effective graphene transfer method for graphene/silicon Schottky diodes on a wafer as large as 6 inches. Graphene grown on a large scale substrate was passivated and sealed with a gold layer, protecting graphene from any possible contaminant and keeping good electrical contact. The Au/graphene was transferred by the tension-assisted transfer process without polymer residues. The gold film itself was used directly as the electrodes of a Schottky diode. We demonstrated wafer-scale integration of graphene/silicon Schottky diode using the proposed transfer process. The transmission electron microscopy analysis and relatively low ideality factor of the diodes indicated fewer defects on the interface than those obtained using the conventional poly(methyl methacrylate)-assisted transfer method. We further demonstrated gas sensors as an application of graphene Schottky diodes.

  8. Recrystallization Texture and Microstructure of Metal Substrate for Y123 Coated Superconductor

    Institute of Scientific and Technical Information of China (English)

    刘慧舟; 史锴; 杨坚; 袁冠森

    2003-01-01

    The cube textured pure Ni and non-magnetic Cu-Ni tapes were obtained by rolling and recrystallization, and these tapes are suitable as substrates of the second generation high temperature superconducting tape. The texture of tapes was studied using Orientation Distribution Function (ODF) and φ-scans. The results indicate that sharp cube texture of Cu0.70Ni0.30 and pure Ni was formed at 1000 ℃ and that of Cu0.85Ni0.15 was formed at 900 ℃. The intensities of cube texture differ from each other. Uniform equiaxial crystallites are formed in all the tapes and the size of Cu0.85Ni0.15 is larger than that of Cu0.70Ni0.30 and pure Ni. Annealing twin is formed in Cu0.85Ni0.15 and Cu0.70Ni0.30.

  9. Strain-delocalizing effect of a metal substrate on nanocrystalline Ni film

    Energy Technology Data Exchange (ETDEWEB)

    Qi, Dexing [Department of Mechanical Engineering, Nanjing Tech University, Nanjing, Jiangsu Province 210009 (China); Zhou, Jianqiu, E-mail: zhouj@njut.edu.cn [Department of Mechanical Engineering, Nanjing Tech University, Nanjing, Jiangsu Province 210009 (China); Department of Mechanical Engineering, Wuhan Institute of Technology, Wuhan, Hubei Province 430070 (China); Liu, Hongxi; Dong, Shuhong [Department of Mechanical Engineering, Nanjing Tech University, Nanjing, Jiangsu Province 210009 (China); Wang, Ying [Department of Mechanical and Electronic Engineering, Suzhou Institute of Industrial Technology, Suzhou, Jiangsu 215104 (China)

    2015-07-29

    Uniaxial tensile test and scanning electron microscopy (SEM) are introduced to study the tensile properties of electrodeposited nanocrystalline nickel/coarse-grained copper (N/C) composite in this paper. Compared to the stress strain response of pure nanocrystalline (NC) nickel (Ni), the tensile ductility of N/C composite is enhanced significantly. Based on the experimental results, a multi-phase composite model is proposed to investigate the micromechanical behaviors of the NC Ni film and N/C composite plate. The constitutive models are implemented into ABAQUS/Explicit in the form of VUMAT subroutine. A series of numerical simulations are carried out and the predications were in good agreement with experimental results. It can be concluded that the coarse-grained (CG) substrate work well in suppressing the strain localization in the NC Ni film.

  10. Laser-Generated Rayleigh Waves Propagating in Transparent Viscoelastic Adhesive Coating/Metal Substrate Systems

    Science.gov (United States)

    Guan, Yi-jun; Sun, Hong-xiang; Yuan, Shou-qi; Zhang, Shu-yi; Ge, Yong

    2016-10-01

    We have established numerical models for simulating laser-generated Rayleigh waves in coating/substrate systems by a finite element method and investigated the propagation characteristics of Rayleigh waves in systems concerning the viscoelasticity and transparency of adhesive coatings. In this way, we have studied the influence of the mechanical properties of the coating, such as the elastic moduli, viscoelastic moduli, coating thickness, transparency, and coating material, on the propagation characteristics of the Rayleigh waves. The results show that the propagation characteristics of the Rayleigh waves can be divided into low- and high-frequency parts. The high-frequency propagation characteristics of the Rayleigh wave are closely related to the properties of the adhesive coating.

  11. Growth of 2 um Crack-Free GaN on Si(111)Substrates by Metal Organic Chemical Vapor Deposition

    Institute of Scientific and Technical Information of China (English)

    WEI Meng; WANG Xiao-Liang; XIAO Hong-Ling; WANG Cui-Mei; PAN Xu; HOU Qi-Feng; WANG Zhan-Guo

    2011-01-01

    A 2μm high quality crack-free GaN film was successfully grown on 2-inch Si(111) substrates by metal organic chemical vapor deposition with a high temperature AlN/graded-AlGaN multibuffer and an AlN/GaN superlattice interlayer. It is found that the structures, as well as the thicknesses of the multibuffer and interlayer, are crucial for the growth of a crack-free GaN epilayer. The GaN(0002) XRD FWHM of the crack-free sample is 479.8 arcsec, indicating good crystal quality. An AlGaN/GaN heterostructure was grown and tested by Van der Pauw Hall measurement. The electron mobility of two-dimensional electron gas increases from 1928 cm2/V·s to 12277cm2/V·s when the test-temperature decreases from room temperature to liquid nitrogen temperature. The electron mobility is comparable to that of AlGaN/GaN heterostructures grown on sapphire, and the largest value is obtained for an AlGaN/GaN/Si(111) heterostructure grown by metal organic chemical vapor deposition.%@@ A 2pm high quality crack-free GaN film was successfully grown on 2-inch Si(111)substrates by metal organic chemical vapor deposition with a high temperature AIN/graded-AIGaN multibuffer and an AIN/GaN superlattice interlayer.It is found that the structures, as well as the thicknesses of the multibuffer and interlayer, are crucial for the growth of a crack-free GaN epilayer.The GaN(0002)XRD FWHM of the crack-free sample is 479.8arcsec, indicating good crystal quality.An AIGaN/GaN heterostructure was grown and tested by Van der Pauw Hall measurement.The electron mobility of two-dimensional electron gas increases from 1928 cm 2/V.S to 12277cm2/V s when the test-temperature decreases from room temperature to liquid nitrogen temperature.The electron mobility is comparable to that of AIGaN/GaN heterostructures grown on sapphire, and the largest value is obtained for an A]GaN/GaN/Si(111)heterostructure grown by metal organic chemical vapor deposition.

  12. Versatile Oxidation Methods for Organic and Inorganic Substrates Catalyzed by Platinum-Group Metals on Carbons.

    Science.gov (United States)

    Sawama, Yoshinari; Asai, Shota; Monguchi, Yasunari; Sajiki, Hironao

    2016-02-01

    Platinum-group metals on activated carbon catalysts, represented by Pd/C, Ru/C, Rh/C, etc., are widely utilized to accomplish green and sustainable organic reactions due to their favorable features, such as easy handling, recoverability, and reusability. The efficient oxidation methods of various organic compounds using heterogeneous platinum-group metals on carbons with or without added oxidants are summarized in this Personal Account. The oxidation of internal alkynes into diketones was effectively catalyzed by Pd/C in the presence of dimethyl sulfoxide and molecular oxygen or pyridine N-oxide. The Pd/C-catalyzed mild combustion of gaseous hydrogen with molecular oxygen provided hydrogen peroxide, which could be directly utilized for the oxidation of sulfide derivatives into sulfoxides. Furthermore, the Ru/C-catalyzed aerobic oxidation of primary and secondary alcohols gave the corresponding aldehydes and ketones, respectively. On the other hand, the dehydrogenative oxidation of secondary alcohols into ketones was achieved using Rh/C in water, and primary alcohols were effectively dehydrogenated by Pd/C in water under mildly reduced pressure to produce carboxylic acids. PMID:26666634

  13. Metal-assisted exfoliation (MAE): green, roll-to-roll compatible method for transferring graphene to flexible substrates

    Science.gov (United States)

    Zaretski, Aliaksandr V.; Moetazedi, Herad; Kong, Casey; Sawyer, Eric J.; Savagatrup, Suchol; Valle, Eduardo; O'Connor, Timothy F.; Printz, Adam D.; Lipomi, Darren J.

    2015-01-01

    Graphene is expected to play a significant role in future technologies that span a range from consumer electronics, to devices for the conversion and storage of energy, to conformable biomedical devices for healthcare. To realize these applications, however, a low-cost method of synthesizing large areas of high-quality graphene is required. Currently, the only method to generate large-area single-layer graphene that is compatible with roll-to-roll manufacturing destroys approximately 300 kg of copper foil (thickness = 25 μm) for every 1 g of graphene produced. This paper describes a new environmentally benign and scalable process of transferring graphene to flexible substrates. The process is based on the preferential adhesion of certain thin metallic films to graphene; separation of the graphene from the catalytic copper foil is followed by lamination to a flexible target substrate in a process that is compatible with roll-to-roll manufacturing. The copper substrate is indefinitely reusable and the method is substantially greener than the current process that uses relatively large amounts of corrosive etchants to remove the copper. The sheet resistance of the graphene produced by this new process is unoptimized but should be comparable in principle to that produced by the standard method, given the defects observable by Raman spectroscopy and the presence of process-induced cracks. With further improvements, this green, inexpensive synthesis of single-layer graphene could enable applications in flexible, stretchable, and disposable electronics, low-profile and lightweight barrier materials, and in large-area displays and photovoltaic modules.

  14. Metal-assisted exfoliation (MAE): green, roll-to-roll compatible method for transferring graphene to flexible substrates

    International Nuclear Information System (INIS)

    Graphene is expected to play a significant role in future technologies that span a range from consumer electronics, to devices for the conversion and storage of energy, to conformable biomedical devices for healthcare. To realize these applications, however, a low-cost method of synthesizing large areas of high-quality graphene is required. Currently, the only method to generate large-area single-layer graphene that is compatible with roll-to-roll manufacturing destroys approximately 300 kg of copper foil (thickness = 25 μm) for every 1 g of graphene produced. This paper describes a new environmentally benign and scalable process of transferring graphene to flexible substrates. The process is based on the preferential adhesion of certain thin metallic films to graphene; separation of the graphene from the catalytic copper foil is followed by lamination to a flexible target substrate in a process that is compatible with roll-to-roll manufacturing. The copper substrate is indefinitely reusable and the method is substantially greener than the current process that uses relatively large amounts of corrosive etchants to remove the copper. The sheet resistance of the graphene produced by this new process is unoptimized but should be comparable in principle to that produced by the standard method, given the defects observable by Raman spectroscopy and the presence of process-induced cracks. With further improvements, this green, inexpensive synthesis of single-layer graphene could enable applications in flexible, stretchable, and disposable electronics, low-profile and lightweight barrier materials, and in large-area displays and photovoltaic modules. (paper)

  15. Influence of hydrogen on the structure and stability of ultra-thin ZnO on metal substrates

    Energy Technology Data Exchange (ETDEWEB)

    Bieniek, Bjoern [Fritz-Haber-Institut der Max-Planck-Gesellschaft, 14195 Berlin (Germany); Hofmann, Oliver T. [Fritz-Haber-Institut der Max-Planck-Gesellschaft, 14195 Berlin (Germany); Institut für Festkörperphysik, TU Graz, 8010 Graz (Austria); Rinke, Patrick, E-mail: patrick.rinke@aalto.fi [Fritz-Haber-Institut der Max-Planck-Gesellschaft, 14195 Berlin (Germany); School of Science, Aalto University, FI-00076 Aalto (Finland)

    2015-03-30

    We investigate the atomic and electronic structure of ultra-thin ZnO films (1 to 4 layers) on the (111) surfaces of Ag, Cu, Pd, Pt, Ni, and Rh by means of density-functional theory. The ZnO monolayer is found to adopt an α-BN structure on the metal substrates with coincidence structures in good agreement with experiment. Thicker ZnO layers change into a wurtzite structure. The films exhibit a strong corrugation, which can be smoothed by hydrogen (H) adsorption. An H over-layer with 50% coverage is formed at chemical potentials that range from low to ultra-high vacuum H{sub 2} pressures. For the Ag substrate, both α-BN and wurtzite ZnO films are accessible in this pressure range, while for Cu, Pd, Pt, Rh, and Ni wurtzite films are favored. The surface structure and the density of states of these H passivated ZnO thin films agree well with those of the bulk ZnO(0001{sup ¯})-2×1-H surface.

  16. Breaking up the wall: metal-enrichment in Ovipositors, but not in mandibles, co-varies with substrate hardness in gall-wasps and their associates.

    Directory of Open Access Journals (Sweden)

    Carlo Polidori

    Full Text Available The cuticle of certain insect body parts can be hardened by the addition of metals, and because niche separation may require morphological adaptations, inclusion of such metals may be linked to life history traits. Here, we analysed the distribution and enrichment of metals in the mandibles and ovipositors of a large family of gall-inducing wasps (Cynipidae, or Gall-Wasps (plus one gall-inducing Chalcidoidea, and their associated wasps (gall-parasitoids and gall-inquilines (Cynipidae, Chalcidoidea and Ichneumonoidea. Both plant types/organs where galls are induced, as well as galls themselves, vary considerably in hardness, thus making this group of wasps an ideal model to test if substrate hardness can predict metal enrichment. Non-galler, parasitic Cynipoidea attacking unconcealed hosts were used as ecological "outgroup". With varying occurrence and concentration, Zn, Mn and Cu were detected in mandibles and ovipositors of the studied species. Zn tends be exclusively concentrated at the distal parts of the organs, while Mn and Cu showed a linear increase from the proximal to the distal parts of the organs. In general, we found that most of species having metal-enriched ovipositors (independently of metal type and concentration were gall-invaders. Among gall-inducers, metals in the ovipositors were more likely to be found in species inducing galls in woody plants. Overall, a clear positive effect of substrate hardness on metal concentration was detected for all the three metals. Phylogenetic relationships among species, as suggested by the most recent estimates, seemed to have a weak role in explaining metal variation. On the other hand, no relationships were found between substrate hardness or gall-association type and concentration of metals in mandibles. We suggest that ecological pressures related to oviposition were sufficiently strong to drive changes in ovipositor elemental structure in these gall-associated Hymenoptera.

  17. Common data buffer

    Science.gov (United States)

    Byrne, F.

    1981-01-01

    Time-shared interface speeds data processing in distributed computer network. Two-level high-speed scanning approach routes information to buffer, portion of which is reserved for series of "first-in, first-out" memory stacks. Buffer address structure and memory are protected from noise or failed components by error correcting code. System is applicable to any computer or processing language.

  18. The modulation effect of substrate doping on multi-node charge collection and single-event transient propagation in 90-nm bulk complementary metal-oxidesemiconductor technology

    Institute of Scientific and Technical Information of China (English)

    Qin Jun-Rui; Chen Shu-Ming; Liu Bi-Wei; Liu Zheng; Liang Bin; Du Yan-Kang

    2011-01-01

    Variation of substrate background doping will affect the charge collection of active and passive MOSFETs in complementary metal-oxide semiconductor (CMOS) technologies,which are significant for charge sharing,thus affecting the propagated single event transient pulsewidths in circuits.The trends of charge collected by the drain of a positive channel metal-oxide semiconductor (PMOS) and an N metal-oxide semiconductor (NMOS) are opposite as the substrate doping increases.The PMOS source will inject carriers after strike and the amount of charge injected will increase as the substrate doping increases,whereas the source of the NMOS will mainly collect carriers and the source of the NMOS can also inject electrons when the substrate doping is light enough.Additionally,it indicates that substrate doping mainly affects the bipolar amplification component of a single-event transient current,and has little effect on the drift and diffusion.The change in substrate doping has a much greater effect on PMOS than on NMOS.

  19. Effects of substrate temperature on the unusual non-Fermi liquid metal to insulator transition in perovskite SrIrO3 thin films

    OpenAIRE

    Biswas, Abhijit; Jeong, Yoon Hee

    2015-01-01

    Electronic transport has been investigated for strong spin-orbit coupled perovskite SrIrO3 thin films grown at various substrate temperatures. The electronic transport of the SrIrO3 films is found to be very sensitive to the growth parameters; in particular, the film can either be a metal or an insulator depending upon the substrate growth temperature. While all the metallic films show unusual sublinear temperature dependent non-Fermi liquid behaviors in resistivity, the insulating film grown...

  20. Fly ash based geopolymer thin coatings on metal substrates and its thermal evaluation.

    Science.gov (United States)

    Temuujin, Jadambaa; Minjigmaa, Amgalan; Rickard, William; Lee, Melissa; Williams, Iestyn; van Riessen, Arie

    2010-08-15

    Class F fly ash based Na-geopolymer formulations have been applied as fire resistant coatings on steel. The main variables for the coating formulations were Si: Al molar and water: cement weight ratios. We have determined that the adhesive strength of the coatings strongly depend on geopolymer composition. The ease with which geopolymer can be applied onto metal surfaces and the resultant thickness depend on the water content of the formulation. Adhesive strengths of greater than 3.5 MPa have been achieved on mild steel surfaces for compositions with Si:Al of 3.5. Microstructure evolution and thermal properties of the optimised coating formulations show that they have very promising fire resistant characteristics.

  1. Thickness dependent fatigue life at microcrack nucleation for metal thin films on flexible substrates

    Science.gov (United States)

    Sun, X. J.; Wang, C. C.; Zhang, J.; Liu, G.; Zhang, G. J.; Ding, X. D.; Zhang, G. P.; Sun, J.

    2008-10-01

    For polymer-supported metal thin films used in flexible electronics, the definition of the fatigue lifetime at microcrack nucleation (FLMN) should be more physically meaningful than all the previous definitions at structural instability. In this paper, the FLMN of Cu films (with thickness from 100 nm to 3.75 µm) as well as Al thin films (from 80 to 800 nm) was experimentally characterized at different strain ranges and different thicknesses by using a simple electrical resistance measurement (ERM). A significant thickness dependence was revealed for the FLMN and a similar Coffin-Manson fatigue relationship observed commonly in bulk materials was found to be still operative in both the films. Microstructural analyses were carried out to verify the feasibility of ERM correspondingly.

  2. [Coating modification of anthracite substrates in vertical-flow constructed wetlands by LDHs synthesized from different metal compounds and the nitrogen removal efficiencies].

    Science.gov (United States)

    Zhang, Xiang-Ling; Guo, Lu; Chen, Jun-Jie; Liu, Xiao-Ting; Xu, Lu; Chen, Qiao-Zhen; Wang, Xiao-Xiao

    2014-08-01

    As one kind of vertical-flow constructed wetlands substrates, anthracite was selected in this experiment. LDHs (layered double hydroxides) were synthesized in alkaline conditions by co-precipitation of different kinds of metal compounds, such as CaCl2, ZnCl2, MgCl2, FeCl3, AlCl3, CoCl3. The synthesized LDHs were in-situ coated onto the surface of anthracite substrate to achieve the aim of modification. Simulated test columns were constructed to study the nitrogen removal efficiency of the urban sewage using the original anthracite substrates and 9 kinds of modified anthracite substrates. The results showed that: LDHs synthesized by all the 9 different kinds of methods could effectively modify the anthracite substrate by in-situ coating. With Mg2+ involved in the synthesis of modified substrates, good TN and ammonia nitrogen removal efficiencies were observed. The modified anthracite substrates coated with MgCo-LDHs had the optimal performance with average TN and ammonia nitrogen removal efficiencies of higher than 80% and 85%, respectively. The ammonia nitrogen removal efficiencies by the modified anthracite substrates coated by LDHs reacted with Mg2+ and Fe3+ were also high. The ammonia nitrogen removal efficiencies by modified anthracite substrates coated with CaFe-LDHs and MgFe-LDHs were higher than 85%. PMID:25340214

  3. Building one-dimensional oxide nanostructure arrays on conductive metal substrates for lithium-ion battery anodes.

    Science.gov (United States)

    Jiang, Jian; Li, Yuanyuan; Liu, Jinping; Huang, Xintang

    2011-01-01

    Lithium ion battery (LIB) is potentially one of the most attractive energy storage devices. To meet the demands of future high-power and high-energy density requirements in both thin-film microbatteries and conventional batteries, it is challenging to explore novel nanostructured anode materials instead of conventional graphite. Compared to traditional electrodes based on nanostructure powder paste, directly grown ordered nanostructure array electrodes not only simplify the electrode processing, but also offer remarkable advantages such as fast electron transport/collection and ion diffusion, sufficient electrochemical reaction of individual nanostructures, enhanced material-electrolyte contact area and facile accommodation of the strains caused by lithium intercalation and de-intercalation. This article provides a brief overview of the present status in the area of LIB anodes based on one-dimensional nanostructure arrays growing directly on conductive inert metal substrates, with particular attention to metal oxides synthesized by an anodized alumina membrane (AAM)-free solution-based or hydrothermal methods. Both the scientific developments and the techniques and challenges are critically analyzed.

  4. Fabrication of periodic arrays of metallic nanoparticles by block copolymer templates on HfO2 substrates.

    Science.gov (United States)

    Frascaroli, Jacopo; Seguini, Gabriele; Spiga, Sabina; Perego, Michele; Boarino, Luca

    2015-05-29

    Block copolymer-based templates can be exploited for the fabrication of ordered arrays of metal nanoparticles (NPs) with a diameter down to a few nanometers. In order to develop this technique on metal oxide substrates, we studied the self-assembly of polymeric templates directly on the HfO₂ surface. Using a random copolymer neutralization layer, we obtained an effective HfO₂ surface neutralization, while the effects of surface cleaning and annealing temperature were carefully examined. Varying the block copolymer molecular weight, we produced regular nanoporous templates with feature size variable between 10 and 30 nm and a density up to 1.5 × 10¹¹ cm⁻². With the adoption of a pattern transfer process, we produced ordered arrays of Pt and Pt/Ti NPs with diameters of 12, 21 and 29 nm and a constant size dispersion (σ) of 2.5 nm. For the smallest template adopted, the NP diameter is significantly lower than the original template dimension. In this specific configuration, the granularity of the deposited film probably influences the pattern transfer process and very small NPs of 12 nm were achieved without a significant broadening of the size distribution. PMID:25948389

  5. Fabrication of large-grained thin polycrystalline silicon films on foreign substrates by titanium-assisted metal-induced layer exchange

    Science.gov (United States)

    Antesberger, T.; Wassner, T. A.; Kashani, M.; Scholz, M.; Lechner, R.; Matich, S.; Stutzmann, M.

    2012-12-01

    Metal-induced layer exchange (MILE) is a well-known method to grow large-grained high quality polycrystalline silicon on foreign substrates. We have modified the commonly used layer stack by an additional titanium interfacial layer (substrate/metal/titanium/oxide/amorphous silicon). The resulting layer exchange process is called titanium-assisted metal-induced layer exchange (Ti.MILE). For the investigated metals, Al (Ti.ALILE) and Ag (Ti.AgILE), the additional Ti layer does not affect the overall layer exchange process but results in a strong enlargement of the grains in the resulting polycrystalline silicon layer up to 250 μm. We have investigated the influence of the titanium interfacial layer on the process dynamics and grain growth. Furthermore, the structural and optical properties of the resulting polycrystalline silicon layer are investigated by means of different analysis methods.

  6. Molten-Metal Droplet Deposition on a Moving Substrate in Microgravity: Aiding the Development of Novel Technologies for Microelectronic Assembly

    Science.gov (United States)

    Megaridis, C. M.; Bayer, I. S.; Poulikakos, D.; Nayagam, V.

    2002-01-01

    Driven by advancements in microelectronics manufacturing, this research investigates the oblique (non-axisymmetric) impact of liquid-metal droplets on flat substrates. The problem of interest is relevant to the development of the novel technology of on-demand dispension (printing) of microscopic solder deposits for the surface mounting of microelectronic devices. The technology, known as solder jetting, features on-demand deposition of miniature solder droplets (30 to 120 microns in diameter) in very fine, very accurate patterns using techniques analogous to those developed for the ink-jet printing industry. Despite its promise, severe limitations exist currently with regards to the throughput rates of the technology; some of these limitations are largely due to the lack of the capability for reliable prediction of solder bump positioning and shapes, especially under ballistic deposition conditions where the droplet impact phenomena are inherently three-dimensional. The study consists of a theoretical and an experimental component. The theoretical work uses a finite element formulation to simulate numerically the non-axisymmetric (3-D) fluid mechanics and heat transfer phenomena of a liquid solder droplet impacting at an angle alpha on a flat substrate. The work focuses on the pre-solidification regime. The modeling of the most challenging fluid mechanics part of the process has been completed successfully. It is based upon the full laminar Navier-Stokes equations employing a Lagrangian frame of reference. Due to the large droplet deformation, the surface (skin) as well as the volumetric mesh have to be regenerated during the calculations in order to maintain the high accuracy of the numerical scheme. The pressure and velocity fields are then interpolated on the newly created mesh. The numerical predictions are being tested against experiments, for cases where wetting phenomena are not important. For the impact parameters used in the example shown (We = 2.38, Fr

  7. Origin of low sodium capacity in graphite and generally weak substrate binding of Na and Mg among alkali and alkaline earth metals

    OpenAIRE

    Liu, Yuanyue; Merinov, Boris V.; Goddard III, William A.

    2016-01-01

    It is well known that graphite has a low capacity for Na but a high capacity for other alkali metals. The growing interest in alternative cation batteries beyond Li makes it particularly important to elucidate the origin of this behavior, which is not well understood. In examining this question, we find a quite general phenomenon: among the alkali and alkaline earth metals, Na and Mg generally have the weakest chemical binding to a given substrate, compared with the other elements in the same...

  8. Effect of Adhesive Type on the Shear Bond Strength of Metal Brackets to Two Ceramic Substrates

    Directory of Open Access Journals (Sweden)

    Mohammad Sadegh Ahmad Akhoundi

    2014-04-01

    Full Text Available Increased number of adult patients requesting orthodontic treatment result in bonding bracket to ceramic restorations more than before. The aim of this study was to evaluate and compare the shear bond strength of orthodontic brackets bonded to two types of ceramic bases with conventional orthodontic bonding resin and a new nano-filled composite resin.Twenty four feldespathic porcelain and 24 lithium disilicate ceramic disks were fabricated. All of the samples were conditioned by sandblasting, hydrofluoric acid and silane. Maxillary incisor metal brackets were bonded to half of the disks in each group by conventional orthodontic bonding resin and the other half bonded with a nano-filled composite. The samples then were thermocycled for 2000 cycle between 5-55° C. Shear bond strength was measured and the mode of failure was examined. Randomly selected samples were also evaluated by SEM.The lowest bond strength value was found infeldespathic ceramic bonded by nano-filled composite (p<0.05. There was not any statistically significant difference between other groups regarding bond strength. The mode of failure in the all groups except group 1 was cohesive and porcelain damages were detected.Since less damages to feldspathic porcelain was observed when the nano-filled composite was used to bond brackets, the use of nano-filled composite resins can be suggested for bonding brackets to feldspathic porcelain restorations.

  9. BaxSr1−xTi1.02O3 metal–insulator–metal capacitors on planarized alumina substrates

    NARCIS (Netherlands)

    Tiggelman, M.P.J.; Reimann, K.; Klee, M.; Mauczok, R.; Keur, W.; Hueting, R.J.E.

    2010-01-01

    Nanocrystalline barium strontium titanate (BaxSr1−xTi1.02O3) thin films with a barium content of x=0.8, 0.9 and 1 have been fabricated in a metal–insulator–metal configuration on glass-planarized alumina substrates. Cost-effective processing measures have been utilized by using poly-crystalline alum

  10. Characterization of AlInN/AlN/GaN Heterostructures with Different AlN Buffer Thickness

    Science.gov (United States)

    Çörekçi, S.; Dugan, S.; Öztürk, M. K.; Çetin, S. Ş.; Çakmak, M.; Özçelik, S.; Özbay, E.

    2016-07-01

    Two AlInN/AlN/GaN heterostructures with 280-nm- and 400-nm-thick AlN buffer grown on sapphire substrates by metal-organic chemical vapor deposition (MOCVD) have been investigated by x-ray diffraction (XRD), atomic force microscopy (AFM), photoluminescence (PL) and Hall-effect measurements. The symmetric (0002) plane with respect to the asymmetric (10bar{1}2) plane in the 280-nm-thick AlN buffer has a higher crystal quality, as opposed to the 400-nm-thick buffer. The thinner buffer improves the crystallinity of both (0002) and (10bar{1}2) planes in the GaN layers, it also provides a sizeable reduction in dislocation density of GaN. Furthermore, the lower buffer thickness leads to a good quality surface with an rms roughness of 0.30 nm and a dark spot density of 4.0 × 108 cm-2. The optical and transport properties of the AlInN/AlN/GaN structure with the relatively thin buffer are compatible with the enhancement in its structural quality, as verified by XRD and AFM results.

  11. LETTER TO THE EDITOR: Variation of adatom to substrate charge transfer value along the first-row transition metal series on Mo(110)

    Science.gov (United States)

    Magkoev, T. T.; Christmann, K.; Lecante, P.; Moutinho, A. M. C.

    2002-04-01

    Adsorption of the first-row transition 3d metals (Ti-Cu) on the atomically clean Mo(110) surface in ultra-high-vacuum conditions has been studied by Auger electron spectroscopy and work function measurements (Anderson method). In this letter it is shown that adsorption behaviour of the metals under consideration systematically changes along the 3d series. The observed correlation between the systematic change of the dipole moments and the values of the charge transfer from adatom to substrate along the period leads us to the conclusion that the metal 3d orbitals play an important role in the formation of the chemisorption bond.

  12. Final report on LDRD project: Low-cost Pd-catalyzed metallization technology for rapid prototyping of electronic substrates and devices

    Energy Technology Data Exchange (ETDEWEB)

    Chen, K.S.; Morgan, W.P.; Zich, J.L.

    1998-02-01

    A low-cost, thermally-activated, palladium-catalyzed metallization process was developed for rapid prototyping of polymeric electronic substrates and devices. The process was successfully applied in producing adhesiveless copper/polyimide laminates with high peel strengths and thick copper coating; copper/polyimide laminates are widely used in fabricating interconnects such as printed wiring boards (PWBs) and flexible circuits. Also successfully metallized using this low-cost metallization process were: (1) scaled-down models of radar-and-communication antenna and waveguide; (2) scaled-down model of pulsed-power-accelerator electrode; (3) three-dimensional micro-porous, open-cell vitreous carbon foams. Moreover, additive patterned metallization was successfully achieved by selectively printing or plotting the catalyst ink only on areas where metallization is desired, and by uniform thermal activation. Additive patterned metallization eliminates the time-consuming, costly and environmentally-unfriendly etching process that is routinely carried out in conventional subtractive patterned metallization. A metallization process via ultraviolet (UV) irradiation activation was also demonstrated. In this process palladium-catalyst solution is first uniformly coated onto the substrate. A masking pattern is used to cover the areas where metallization is not wanted. UV irradiation is applied uniformly to activate the palladium catalyst and to cure the polymer carrier in areas that are not covered by the mask. Metal is then deposited by electroless plating only or by a combination of electroless and electrolytic plating. This UV-activation technique is particularly useful in additive fine-line patterned metallization. Lastly, computer models for electrolytic and electroless plating processes were developed to provide guidance in plating-process design.

  13. A New Sample Substrate for Imaging and Correlating Organic and Trace Metal Composition in Biological Cells and Tissues

    Energy Technology Data Exchange (ETDEWEB)

    Miller,L.; Wang, Q.; Smith, R.; Zhong, H.; Elliott, D.; Warren, J.

    2007-01-01

    Many disease processes involve alterations in the chemical makeup of tissue. Synchrotron-based infrared (IR) and X-ray fluorescence (XRF) microscopes are becoming increasingly popular tools for imaging the organic and trace metal compositions of biological materials, respectively, without the need for extrinsic labels or stains. Fourier transform infrared microspectroscopy (FTIRM) provides chemical information on the organic components of a material at a diffraction-limited spatial resolution of 2-10 {mu}m in the mid-infrared region. The synchrotron X-ray fluorescence (SXRF) microprobe is a complementary technique used to probe trace element content in the same systems with a similar spatial resolution. However to be most beneficial, it is important to combine the results from both imaging techniques on a single sample, which requires precise overlap of the IR and X-ray images. In this work, we have developed a sample substrate containing a gold grid pattern on its surface, which can be imaged with both the IR and X-ray microscopes. The substrate consists of a low trace element glass slide that has a gold grid patterned on its surface, where the major and minor parts of the grid contain 25 and 12 nm gold, respectively. This grid pattern can be imaged with the IR microscope because the reflectivity of gold differs as a function of thickness. The pattern can also be imaged with the SXRF microprobe because the Au fluorescence intensity changes with gold thickness. The tissue sample is placed on top of the patterned substrate. The grid pattern's IR reflectivity image and the gold SXRF image are used as fiducial markers for spatially overlapping the IR and SXRF images from the tissue. Results show that IR and X-ray images can be correlated precisely, with a spatial resolution of less than one pixel (i.e., 2-3 microns). The development of this new tool will be presented along with applications to paraffin-embedded metalloprotein crystals, Alzheimer's disease

  14. Controllability of self-aligned four-terminal planar embedded metal double-gate low-temperature polycrystalline-silicon thin-film transistors on a glass substrate

    Science.gov (United States)

    Ohsawa, Hiroki; Sasaki, Shun; Hara, Akito

    2016-03-01

    Self-aligned four-terminal n-channel (n-ch) and p-channel (p-ch) planar embedded metal double-gate polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) were fabricated on a glass substrate at a low temperature of 550 °C. This device includes a metal top gate (TG) and a metal bottom gate (BG), which are used as the drive and control gates or vice versa. The BG was embedded in a glass substrate, and a poly-Si channel with large lateral grains was fabricated by continuous-wave laser lateral crystallization. The threshold voltage modulation factors under various control gate voltages (γ = ΔVth/ΔVCG) were nearly equal to the theoretical predictions in both the n- and p-ch TFTs. By exploiting this high controllability, an enhancement depletion (ED) inverter was fabricated, and successful operation at 2.0 V was confirmed.

  15. Improved properties of barium strontium titanate thin films grown on copper foils by pulsed laser deposition using a self-buffered layer

    International Nuclear Information System (INIS)

    Ba0.6Sr0.4TiO3 (BST) films were deposited by pulsed laser deposition on copper foils with low-temperature self-buffered layers. The deposition conditions included a low oxygen partial pressure and a temperature of 700 °C to crystallize the films without the formation of secondary phases and substrate oxidation. The results from x-ray diffraction and scanning electron microscopy indicated that the microstructure of the BST films strongly depended on the growth temperature. The use of the self-buffered layer improved the dielectric properties of the deposited BST films. The leakage current density of the BST films on the copper foil was 4.4 × 10-9 A cm-2 and 3.3 × 10-6 A cm-2 with and without the self-buffered layer, respectively. The ferroelectric hysteresis loop for the BST thin film with buffer layer was slim, in contrast to the distorted loop observed for the film without the buffer layer. The permittivity (700) and dielectric loss tangent (0.013) of the BST film on the copper foil with self-buffered layer at room temperature were comparable to those of the film on metal and single-crystal substrates. (paper)

  16. Strain-driven synthesis of direction InAs nanowires in V-grooved trenches on Si using InP/GaAs buffer layers

    Science.gov (United States)

    Li, Shiyan; Zhou, Xuliang; Kong, Xiangting; Li, Mengke; Mi, Junping; Wang, Mengqi; Pan, Jiaoqing

    2016-09-01

    The catalyst-free metal organic vapor phase epitaxial growth of InAs nanowires on silicon (001) substrates is investigated by using selectively grown InP/GaAs buffer layers in V-grooved trenches. A strain-driven mechanism of self-aligned direction InAs nanowires growing is proposed and demonstrated by the transmission electron microscopy measurement. The morphology of InAs nanowires is tapered in diameter and exhibits a hexagonal cross-section. The defect-free InAs nanowire shows a pure zinc blende crystal structure and an epitaxial relationship with InP buffer layer.

  17. Electrosynthesis of hydrogel films on metal substrates for the development of coatings with tunable drug delivery performances.

    Science.gov (United States)

    De Giglio, E; Cometa, S; Satriano, C; Sabbatini, L; Zambonin, P G

    2009-03-15

    Novel polyacrylates-based hydrogel thin films were prepared by electrochemical polymerization, a new method to obtain hydrogels directly onto metal substrates. 2-Hydroxy-ethyl-methacrylate (HEMA), a macromer poly (ethylene-glycol diacrylate) (PEGDA) and PEGDA copolymerized with acrylic acid (AA) were used to obtain hydrogels. The electrosynthesized coatings were characterized by X-ray photoelectron spectroscopy, to assess their surface chemical composition, and by water content determination measurements, to characterize the swelling behavior. In particular, quartz crystal microbalance with dissipation monitoring was used to evaluate the pH-dependency of the swelling for AA-containing hydrogels. Moreover, a model protein (bovine serum albumin) and a model drug (caffeine) were entrapped within the hydrogel coatings during electrosynthesis, to examine the release performances and mechanisms of the electrosynthesized hydrogels. It was observed that all the examined polymers showed significant release properties and, in particular, AA-containing hydrogel films confirmed a strong pH-dependence as expected. These coatings seem to be promising in orthopedic field for in situ drug delivery applications. PMID:18404708

  18. Electrosynthesis of hydrogel films on metal substrates for the development of coatings with tunable drug delivery performances.

    Science.gov (United States)

    De Giglio, E; Cometa, S; Satriano, C; Sabbatini, L; Zambonin, P G

    2009-03-15

    Novel polyacrylates-based hydrogel thin films were prepared by electrochemical polymerization, a new method to obtain hydrogels directly onto metal substrates. 2-Hydroxy-ethyl-methacrylate (HEMA), a macromer poly (ethylene-glycol diacrylate) (PEGDA) and PEGDA copolymerized with acrylic acid (AA) were used to obtain hydrogels. The electrosynthesized coatings were characterized by X-ray photoelectron spectroscopy, to assess their surface chemical composition, and by water content determination measurements, to characterize the swelling behavior. In particular, quartz crystal microbalance with dissipation monitoring was used to evaluate the pH-dependency of the swelling for AA-containing hydrogels. Moreover, a model protein (bovine serum albumin) and a model drug (caffeine) were entrapped within the hydrogel coatings during electrosynthesis, to examine the release performances and mechanisms of the electrosynthesized hydrogels. It was observed that all the examined polymers showed significant release properties and, in particular, AA-containing hydrogel films confirmed a strong pH-dependence as expected. These coatings seem to be promising in orthopedic field for in situ drug delivery applications.

  19. Optoelectronic properties of eutectic-metal-bonded (EMB) GaAs-AlGaAs structures on Si substrates

    Science.gov (United States)

    Venkatasubramanian, R.; Timmons, M. L.

    1994-11-01

    Device-quality GaAsAlGaAs thin-film hetero-structures have been obtained on Si substrates using a novel approach called eutectic-metal-bonding (EMB). The optoelectronic material properties of the thin-films have been evaluated by a variety of techniques including, Raman spectroscopy, room temperature photoluminescence (PL), and cathodoluminescence (CL) imaging. Transient PL measurement indicates that the minority-carrier lifetime in an EMB GaAs-on-Si thin-film is about 40 times higher than that in state-of-the-art hetero-epitaxial GaAs-on-Si layer. The PL characteristics of the EMB GaAs-on-Si structures have been used to obtain the long-wavelength dispersion values for GaAs thin-film structures. The minority carrier device quality of these thin-films have been evaluated using dark log I- V measurements on n+- p GaAs diodes, spectral-response characterization and solar cell performance data.

  20. Metal oxide nanostructures synthesized on flexible and solid substrates and used for catalysts, UV detectors, and chemical sensors

    Science.gov (United States)

    Willander, Magnus; Sadollahkhani, Azar; Echresh, Ahmad; Nur, Omer

    2014-03-01

    In this paper we demonstrate the visibility of the low temperature chemical synthesis for developing device quality material grown on flexible and solid substrates. Both colorimetric sensors and UV photodetectors will be presented. The colorimetric sensors developed on paper were demonstrated for heavy metal detection, in particular for detecting copper ions in aqueous solutions. The demonstrated colorimetric copper ion sensors developed here are based on ZnO@ZnS core-shell nanoparticles (CSNPs). These sensors demonstrated an excellent low detection limit of less than 1 ppm of copper ions. Further the colorimetric sensors operate efficiently in a wide pH range between 4 and 11, and even in turbulent water. The CSNPs were additionally used as efficient photocatalytic degradation element and were found to be more efficient than pure ZnO nanoparticles (NPs). Also p-NiO/n-ZnO thin film/nanorods pn junctions were synthesized by a two-step synthesis process and were found to act as efficient UV photodetectors. Additionally we show the effect of the morphology of different CuO nanostructures on the efficiency of photo catalytic degradation of Congo red organic dye.

  1. An InGaAs graded buffer layer in solar cells

    International Nuclear Information System (INIS)

    This paper uses an InGaAs graded buffer layer to solve the problem of lattice mismatch and device performance degradation. In the graded buffer layer, we choose the ''transition layer'' and the ''cover layer'' to accommodate the 3.9% mismatch. No threading dislocations were observed in the uppermost part of the epitaxial layer stack when using a transmission electron microscope (TEM). We analyze the factors which influence the saturation current. Simulation data shows that the cells grown by metal organic vapor phase epitaxy (MOVPE) have considerable open circuit voltage, short circuit current, and photoelectric conversion efficiency. Finally we propose that InP may have great development potential as a substrate material. (semiconductor devices)

  2. Origin of low sodium capacity in graphite and generally weak substrate binding of Na and Mg among alkali and alkaline earth metals.

    Science.gov (United States)

    Liu, Yuanyue; Merinov, Boris V; Goddard, William A

    2016-04-01

    It is well known that graphite has a low capacity for Na but a high capacity for other alkali metals. The growing interest in alternative cation batteries beyond Li makes it particularly important to elucidate the origin of this behavior, which is not well understood. In examining this question, we find a quite general phenomenon: among the alkali and alkaline earth metals, Na and Mg generally have the weakest chemical binding to a given substrate, compared with the other elements in the same column of the periodic table. We demonstrate this with quantum mechanics calculations for a wide range of substrate materials (not limited to C) covering a variety of structures and chemical compositions. The phenomenon arises from the competition between trends in the ionization energy and the ion-substrate coupling, down the columns of the periodic table. Consequently, the cathodic voltage for Na and Mg is expected to be lower than those for other metals in the same column. This generality provides a basis for analyzing the binding of alkali and alkaline earth metal atoms over a broad range of systems. PMID:27001855

  3. Origin of low sodium capacity in graphite and generally weak substrate binding of Na and Mg among alkali and alkaline earth metals

    Science.gov (United States)

    Liu, Yuanyue; Merinov, Boris V.; Goddard, William A., III

    2016-04-01

    It is well known that graphite has a low capacity for Na but a high capacity for other alkali metals. The growing interest in alternative cation batteries beyond Li makes it particularly important to elucidate the origin of this behavior, which is not well understood. In examining this question, we find a quite general phenomenon: among the alkali and alkaline earth metals, Na and Mg generally have the weakest chemical binding to a given substrate, compared with the other elements in the same column of the periodic table. We demonstrate this with quantum mechanics calculations for a wide range of substrate materials (not limited to C) covering a variety of structures and chemical compositions. The phenomenon arises from the competition between trends in the ionization energy and the ion-substrate coupling, down the columns of the periodic table. Consequently, the cathodic voltage for Na and Mg is expected to be lower than those for other metals in the same column. This generality provides a basis for analyzing the binding of alkali and alkaline earth metal atoms over a broad range of systems.

  4. A parallel buffer tree

    DEFF Research Database (Denmark)

    Sitchinava, Nodar; Zeh, Norbert

    2012-01-01

    We present the parallel buffer tree, a parallel external memory (PEM) data structure for batched search problems. This data structure is a non-trivial extension of Arge's sequential buffer tree to a private-cache multiprocessor environment and reduces the number of I/O operations by the number...... of available processor cores compared to its sequential counterpart, thereby taking full advantage of multicore parallelism. The parallel buffer tree is a search tree data structure that supports the batched parallel processing of a sequence of N insertions, deletions, membership queries, and range queries...... in the optimal OhOf(psortN + K/PB) parallel I/O complexity, where K is the size of the output reported in the process and psortN is the parallel I/O complexity of sorting N elements using P processors....

  5. Oxidations of Organic and Inorganic Substrates by Superoxo-, hydroperoxo-, and oxo-compounds of the transition metals.

    Energy Technology Data Exchange (ETDEWEB)

    Michael John Vasbinder

    2006-12-12

    Hammett correlation. It was found that the values of the Hammett reaction constant PN were -1.0(1) for 4-nitro-2-methylpyridine-N-oxide and -2.6(4) for 4-methylpyridine-N-oxide as substrates. The negative value confirms pyridine is acting as a nucleophile. Nucleophiles other than pyridine derivatives were also tested. In the end, it was found that the most effective nucleophiles were the pyridine-N-oxides themselves, meaning that a second equivalent of substrate serves as the most efficient promoter of this oxygen-atom transfer reaction. This relative nucleophilicity of pyridines and pyridine-N-oxides is similar to what is observed in other OAT reactions generating high-valent metal-oxo species.

  6. Effect of dual buffer layer structure on the epitaxial growth of AlN on sapphire

    International Nuclear Information System (INIS)

    Highlights: ► A dual AlN buffer layer structure is proposed to grow AlN films. ► AlN films could be improved obviously by using the dual AlN buffer layer. ► The physical mechanism are discussed. - Abstract: A dual AlN buffer layer structure, including an isolated layer and a nucleation layer, is proposed to improve the growth of AlN films on sapphire substrate by metal organic chemical vapor deposition. This method is aimed to weaken the negative nitridation effect and improve lateral growth condition in the initial growth stage. It is found that suitably increasing the thickness of the nucleation layer is in favor of a better structural quality of the AlN film. An examination of surface morphology by atomic force microscopy suggests that the thicker the dual AlN buffer layer, the rougher the surface, and a higher quality of AlN epilayer is resulted.

  7. Dependence of the heavy-metal uptake of higher fungi on substrate composition and site factors. Abhaengigkeit der Schwermetallaufnahme hoeherer Pilze von der Substratzusammensetzung und von Standortsfaktoren

    Energy Technology Data Exchange (ETDEWEB)

    Dietl, G.

    1987-01-01

    The first part of the work investigates the effect of Cd (in the form of the nitrate) on self-cultured champignons (Agaricus bisporus) as regards mycelium growth and fruit development as well as influences on the toxic effect from various substrate additives. The experiments show A. bisporus to be a suitable species for producing standard materials for different heavy-metal concentrations and combinations. In the second part, the heavy-metal content in four different species, Mycena pura s.str., M. rosea, M. pelianthina and M. diosma from different sites (needle and leaf-wood) is established. According to the conclusion drawn, these mushrooms, because of their heavy-metal-accumulating properties, are definitely suited as biological indicators of heavy metal in soil. (MG) With 14 figs., 37 tabs.

  8. Enhanced dielectric properties from barium strontium titanate films with strontium titanate buffer layers

    Science.gov (United States)

    Cole, M. W.; Ngo, E.; Hubbard, C.; Hirsch, S. G.; Ivill, M.; Sarney, W. L.; Zhang, J.; Alpay, S. P.

    2013-10-01

    In order to enhance the permittivity and tunability of the dielectric component, a thin film dielectric composite consisting of a radio frequency sputtered SrTiO3 (STO) buffer layer and metalorganic solution deposited Mg-doped BaxSr1-xTiO3 (Mg-BST) thin film overgrowth was developed using affordable industry standard processes and materials. The effect of the STO buffer layer thickness on the dielectric response of the heterostructure was investigated. Our results demonstrate that the composite film heterostructure, evaluated in the metal-insulator-metal configuration Pt/STO/Mg-BST/Pt on sapphire substrate, with the thinner (9-17 nm) STO buffer layers possessed enhanced permittivity (ɛr ˜ 491) with respect to the thicker 41 nm buffer layer (ɛr ˜ 360) and that of a control Mg-BST film without a STO buffer layer (ɛr ˜ 380). Additionally, the composite film with the thinner buffer layers were shown to have low losses (tan δ ˜ 0.02), low leakage characteristics (J = 7.0 × 10-9 A/cm2), high breakdown voltage (VBR > 10 V), a large grain microstructure (˜125 nm), and smooth pin-hole free surfaces. The enhanced permittivity of the composite dielectric film resulted from three major factors: (i) the template-effect of the thin STO buffer layer on the thicker Mg-BST over-layer film to achieve a large grain microstructure, (ii) the low viscosity of the metallo-organic solution deposition (MOSD) solution, which ensured heterogeneous nucleation of the Mg-BST overgrowth film on the surface of the STO buffer layer, and (iii) minimization of the low permittivity grain boundary phase (TiO2-x phase). The dielectric response of the BST can be explained using a thermodynamic model taking into account interlayer electrostatic and electromechanical interactions. Additionally, Mg doping of the BST enabled low loss and low leakage characteristics of the heterostructure. The large permittivity, low loss, low leakage characteristics, and defect free surfaces of the composite

  9. Metallic nanocone array photonic substrate for high-uniformity surface deposition and optical detection of small molecules

    Energy Technology Data Exchange (ETDEWEB)

    Coppe, Jean-Philippe [Kinogea Inc., 2168 Shattuck Ave, Berkeley, CA 94704 (United States); Xu Zhida; Chen Yi; Logan Liu, G, E-mail: loganliu@illinois.edu [Micro and Nanotechnology Laboratory, Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, IL (United States)

    2011-06-17

    Molecular probe arrays printed on solid surfaces such as DNA, peptide, and protein microarrays are widely used in chemical and biomedical applications especially genomic and proteomic studies (Pollack et al 1999 Nat. Genet. 23 41-6, Houseman et al 2002 Nat. Biotechnol. 20 270-4, Sauer et al 2005 Nat. Rev. Genet. 6 465-76) as well as surface imaging and spectroscopy (Mori et al 2008 Anal. Biochem. 375 223-31, Liu et al 2006 Nat. Nanotechnol. 1 47-52, Liu 2010 IEEE J. Sel. Top. Quantum Electron. 16 662-71). Unfortunately the printed molecular spots on solid surfaces often suffer low distribution uniformity due to the lingering 'coffee stain' (Deegan et al 1997 Nature 389 827-9) problem of molecular accumulations and blotches, especially around the edge of deposition spots caused by solvent evaporation and convection processes. Here we present, without any surface chemistry modification, a unique solid surface of high-aspect-ratio silver-coated silicon nanocone arrays that allows highly uniform molecular deposition and thus subsequent uniform optical imaging and spectroscopic molecular detection. Both fluorescent Rhodamine dye molecules and unlabeled oligopeptides are printed on the metallic nanocone photonic substrate surface as circular spot arrays. In comparison with the printed results on ordinary glass slides and silver-coated glass slides, not only high printing density but uniform molecular distribution in every deposited spot is achieved. The high-uniformity and repeatability of molecular depositions on the 'coffee stain'-free nanocone surface is confirmed by laser scanning fluorescence imaging and surface enhanced Raman imaging experiments. The physical mechanism for the uniform molecular deposition is attributed to the superhydrophobicity and localized pinned liquid-solid-air interface on the silver-coated silicon nanocone surface. The unique surface properties of the presented nanocone surface enabled high-density, high-uniformity probe

  10. Metallic nanocone array photonic substrate for high-uniformity surface deposition and optical detection of small molecules

    Science.gov (United States)

    Coppé, Jean-Philippe; Xu, Zhida; Chen, Yi; Logan Liu, G.

    2011-06-01

    Molecular probe arrays printed on solid surfaces such as DNA, peptide, and protein microarrays are widely used in chemical and biomedical applications especially genomic and proteomic studies (Pollack et al 1999 Nat. Genet. 23 41-6, Houseman et al 2002 Nat. Biotechnol. 20 270-4, Sauer et al 2005 Nat. Rev. Genet. 6 465-76) as well as surface imaging and spectroscopy (Mori et al 2008 Anal. Biochem. 375 223-31, Liu et al 2006 Nat. Nanotechnol. 1 47-52, Liu 2010 IEEE J. Sel. Top. Quantum Electron. 16 662-71). Unfortunately the printed molecular spots on solid surfaces often suffer low distribution uniformity due to the lingering 'coffee stain' (Deegan et al 1997 Nature 389 827-9) problem of molecular accumulations and blotches, especially around the edge of deposition spots caused by solvent evaporation and convection processes. Here we present, without any surface chemistry modification, a unique solid surface of high-aspect-ratio silver-coated silicon nanocone arrays that allows highly uniform molecular deposition and thus subsequent uniform optical imaging and spectroscopic molecular detection. Both fluorescent Rhodamine dye molecules and unlabeled oligopeptides are printed on the metallic nanocone photonic substrate surface as circular spot arrays. In comparison with the printed results on ordinary glass slides and silver-coated glass slides, not only high printing density but uniform molecular distribution in every deposited spot is achieved. The high-uniformity and repeatability of molecular depositions on the 'coffee stain'-free nanocone surface is confirmed by laser scanning fluorescence imaging and surface enhanced Raman imaging experiments. The physical mechanism for the uniform molecular deposition is attributed to the superhydrophobicity and localized pinned liquid-solid-air interface on the silver-coated silicon nanocone surface. The unique surface properties of the presented nanocone surface enabled high-density, high-uniformity probe spotting beneficial

  11. Phase transitions in [001]-oriented morphotropic PbZr0.52Ti0.48O3 thin film deposited onto SrTiO3-buffered Si substrate

    International Nuclear Information System (INIS)

    An 85 nm-thick morphotropic PbZr0.52Ti0.48O3 (PZT) film grown epitaxially and [001]-oriented onto a SrTiO3-buffered Si-wafer is investigated using temperature dependent X-ray diffraction. Two phase transitions, at Trt ∼ 500 K and Tc ∼ 685 K, are evidenced and are attributed to structural phase transitions from monoclinic-like to tetragonal-like phase and from tetragonal to paraelectric phase, respectively. The stronger upper shift of Trt value with respect to the bulk one and the weakly affected Tc (Tc bulk ∼ 665 K) are explained assuming misfit strain changes when crossing Trt. This finding opens new perspectives for piezoelectric PZT films in harsh applications.

  12. Effects of substrate temperature on the unusual non-Fermi liquid metal to insulator transition in perovskite SrIrO3 thin films

    International Nuclear Information System (INIS)

    Electronic transport has been investigated for strong spin-orbit coupled perovskite SrIrO3 thin films grown at various substrate temperatures. The electronic transport of the SrIrO3 films is found to be very sensitive to the growth parameters; in particular, the film can either be a metal or an insulator depending upon the substrate growth temperature. While all the metallic films show unusual sublinear temperature dependent non-Fermi liquid behaviors in resistivity, the insulating film grown at a higher temperature stands out for its inhomogeneous Ir distribution, as analyzed by secondary ion mass spectrometry. This observation demonstrates that the inhomogeneous distribution of cations can be one of the fundamental factors in affecting the electronic transport in heavy element based oxide films and heterostructures. (paper)

  13. Substrate-induced microstructure effects on the dynamics of the photo-induced Metal-insulator transition in VO$_2$ thin films

    CERN Document Server

    Radue, E; Kittiwatanakul, S; Lu, J; Wolf, S A; Rossi, E; Lukaszew, R A; Novikova, I

    2014-01-01

    We investigate the differences in the dynamics of the ultrafast photo-induced metal-insulator transition (MIT) of two VO$_2$ thin films deposited on different substrates, TiO$_2$ and Al$_2$O$_3$, and in particular the temperature dependence of the threshold laser fluence values required to induce various MIT stages in a wide range of sample temperatures (150 K - 320 K). We identified that, although the general pattern of MIT evolution was similar for the two samples, there were several differences. Most notably, the threshold values of laser fluence required to reach the transition to a fully metallic phase in the VO$_2$ film on the TiO$_2$ substrate were nearly constant in the range of temperatures considered, whereas the VO$_2$/Al$_2$O$_3$ sample showed clear temperature dependence. Our analysis qualitatively connects such behavior to the structural differences in the two VO$_2$ films.

  14. Evaluation of the Accumulation of Trace Metals (as, U, CR, CU, PB, Zn) on Iron-Manganese Coatings on in Situ Stream Pebbles and Emplaced Substrates

    Science.gov (United States)

    Turpin, M. M.; Blake, J.; Crossey, L. J.; Ali, A.; Hansson, L.

    2015-12-01

    Exposure to trace metals (As, U, Cr, Cu, Pb, Zn) has potential negative health effects on human populations and wildlife. Geothermal waters often have elevated concentrations of trace elements and understanding the geochemical cycling of these elements can be challenging. Previous studies have utilized in situ stream pebbles and glass or ceramic substrates with iron-manganese oxide coatings to understand contamination and or chemical cycling. This project's main focus is to develop an ideal tracing method using adsorption onto substrate surfaces and to define key parameters that are necessary for the phenomenon of adsorption between trace metals and these surface coatings to occur. Sampling locations include the Jemez River and Rio San Antonio in the Jemez mountains, northern New Mexico. Both streams have significant geothermal inputs. Pebbles and cobbles were gathered from the active stream channel and 6mm glass beads and 2 X1 in. ceramic plates were placed in streams for three weeks to allow for coating accumulation. Factors such as leachate type, water pH, substrate type, coating accumulation period and leach time were all considered in this experiment. It was found that of the three leachates (aqua regia, 10% aqua regia and hydroxylamine), hydroxylamine was the most effective at leaching coatings without dissolving substrates. Samples leached with aqua regia and 10% aqua regia were found to lose weight and mass over the following 5, 7, and 10 day measurements. Glass beads were determined to be more effective than in stream pebbles as an accumulation substrate: coatings were more easily controlled and monitored. Samples leached with hydroxylamine for 5 hours and 72 hours showed little difference in their leachate concentrations, suggesting that leach time has little impact on the concentration of leachate samples. This research aims to find the best method for trace metal accumulation in streams to aid in understanding geochemical cycling.

  15. Deposition of Metal-Organic Frameworks by Liquid-Phase Epitaxy: The Influence of Substrate Functional Group Density on Film Orientation

    OpenAIRE

    Christof Wöll; Andreas Terfort; Björn Schüpbach; Bo Liu; Arslan, Hasan K.; Xia Stammer; Osama Shekhah; Jinxuan Liu

    2012-01-01

    The liquid phase epitaxy (LPE) of the metal-organic framework (MOF) HKUST-1 has been studied for three different COOH-terminated templating organic surfaces prepared by the adsorption of self-assembled monolayers (SAMs) on gold substrates. Three different SAMs were used, mercaptohexadecanoic acid (MHDA), 4’-carboxyterphenyl-4-methanethiol (TPMTA) and 9-carboxy-10-(mercaptomethyl)triptycene (CMMT). The XRD data demonstrate that highly oriented HKUST-1 SURMOFs with an orientation along the (100...

  16. Methods for improved growth of group III nitride buffer layers

    Science.gov (United States)

    Melnik, Yurity; Chen, Lu; Kojiri, Hidehiro

    2014-07-15

    Methods are disclosed for growing high crystal quality group III-nitride epitaxial layers with advanced multiple buffer layer techniques. In an embodiment, a method includes forming group III-nitride buffer layers that contain aluminum on suitable substrate in a processing chamber of a hydride vapor phase epitaxy processing system. A hydrogen halide or halogen gas is flowing into the growth zone during deposition of buffer layers to suppress homogeneous particle formation. Some combinations of low temperature buffers that contain aluminum (e.g., AlN, AlGaN) and high temperature buffers that contain aluminum (e.g., AlN, AlGaN) may be used to improve crystal quality and morphology of subsequently grown group III-nitride epitaxial layers. The buffer may be deposited on the substrate, or on the surface of another buffer. The additional buffer layers may be added as interlayers in group III-nitride layers (e.g., GaN, AlGaN, AlN).

  17. Pulsed-laser crystallization and epitaxial growth of metal-organic films of Ca-doped LaMnO{sub 3} on STO and LSAT substrates

    Energy Technology Data Exchange (ETDEWEB)

    Daoudi, K. [National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 5, 1-1-1 Higashi, 305-8565 Tsukuba (Japan)]. E-mail: kais.daoudi@gmail.com; Tsuchiya, T. [National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 5, 1-1-1 Higashi, 305-8565 Tsukuba (Japan); Kumagai, T. [National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 5, 1-1-1 Higashi, 305-8565 Tsukuba (Japan)

    2007-05-30

    Ca-doped LaMnO{sub 3} (LCMO) thin films have been successfully prepared on SrTiO{sub 3} (STO) and [(LaAlO{sub 3}){sub 0.3}-(SrAlTaO{sub 6}){sub 0.7}] (LSAT) substrates using the excimer laser assisted metal-organic deposition (ELAMOD) process. The crystallization and the epitaxial growth of the amorphous metal-organic LCMO thin films have been achieved using a KrF excimer laser irradiation while the substrates were kept at constant temperature of 500 deg. C. Epitaxial films were obtained using laser fluence in the interval of 50-120 mJ/cm{sup 2}. The microstructure of the LCMO films was studied using cross-section transmission electron microscopy. High quality of LCMO films having smooth surfaces and sharp interfaces were obtained on both the STO and the LSAT substrates. The effect of the laser fluence on the temperature coefficient of resistance (TCR) was investigated. The largest values of TCR of the LCMO grown on the LSAT and the STO substrates of 8.3% K{sup -1} and 7.46% K{sup -1} were obtained at different laser fluence of 80 mJ/cm{sup 2} and 70 mJ/cm{sup 2}, respectively.

  18. Heuristics for the Buffer Allocation Problem with Collision Probability Using Computer Simulation

    OpenAIRE

    Eishi Chiba

    2015-01-01

    The standard manufacturing system for Flat Panel Displays (FPDs) consists of a number of pieces of equipment in series. Each piece of equipment usually has a number of buffers to prevent collision between glass substrates. However, in reality, very few of these buffers seem to be used. This means that redundant buffers exist. In order to reduce cost and space necessary for manufacturing, the number of buffers should be minimized with consideration of possible collisions. In this paper, we foc...

  19. Growth and characterization of well-aligned densely-packed rutile TiO(2) nanocrystals on sapphire substrates via metal-organic chemical vapor deposition.

    Science.gov (United States)

    Chen, C A; Chen, Y M; Korotcov, A; Huang, Y S; Tsai, D S; Tiong, K K

    2008-02-20

    Well-aligned densely-packed rutile TiO(2) nanocrystals (NCs) have been grown on sapphire (SA) (100) and (012) substrates via metal-organic chemical vapor deposition (MOCVD), using titanium-tetraisopropoxide (TTIP, Ti(OC(3)H(7))(4)) as a source reagent. The surface morphology as well as structural and spectroscopic properties of the as-deposited NCs were characterized using field-emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), selected-area electron diffractometry (SAED), x-ray diffraction (XRD) and micro-Raman spectroscopy. FESEM micrographs reveal that vertically aligned NCs were grown on SA(100), whereas the NCs on the SA(012) were grown with a tilt angle of ∼33° from the normal to substrates. TEM and SAED measurements showed that the TiO(2) NCs on SA(100) with square cross section have their long axis directed along the [001] direction. The XRD results reveal TiO(2) NCs with either (002) orientation on SA(100) substrate or (101) orientation on SA(012) substrate. A strong substrate effect on the alignment of the growth of TiO(2) NCs has been demonstrated and the probable mechanism for the formation of these NCs has been discussed. PMID:21817648

  20. Growth and characterization of well-aligned densely-packed rutile TiO{sub 2} nanocrystals on sapphire substrates via metal-organic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Chen, C A; Chen, Y M; Korotcov, A; Huang, Y S [Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China); Tsai, D S [Department of Chemical Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China); Tiong, K K [Department of Electrical Engineering, National Taiwan Ocean University, Keelung 202, Taiwan (China)], E-mail: ysh@mail.ntust.edu.tw

    2008-02-20

    Well-aligned densely-packed rutile TiO{sub 2} nanocrystals (NCs) have been grown on sapphire (SA) (100) and (012) substrates via metal-organic chemical vapor deposition (MOCVD), using titanium-tetraisopropoxide (TTIP, Ti(OC{sub 3}H{sub 7}){sub 4}) as a source reagent. The surface morphology as well as structural and spectroscopic properties of the as-deposited NCs were characterized using field-emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), selected-area electron diffractometry (SAED), x-ray diffraction (XRD) and micro-Raman spectroscopy. FESEM micrographs reveal that vertically aligned NCs were grown on SA(100), whereas the NCs on the SA(012) were grown with a tilt angle of {approx}33 deg. from the normal to substrates. TEM and SAED measurements showed that the TiO{sub 2} NCs on SA(100) with square cross section have their long axis directed along the [001] direction. The XRD results reveal TiO{sub 2} NCs with either (002) orientation on SA(100) substrate or (101) orientation on SA(012) substrate. A strong substrate effect on the alignment of the growth of TiO{sub 2} NCs has been demonstrated and the probable mechanism for the formation of these NCs has been discussed.

  1. Growth and characterization of well-aligned densely-packed rutile TiO2 nanocrystals on sapphire substrates via metal organic chemical vapor deposition

    Science.gov (United States)

    Chen, C. A.; Chen, Y. M.; Korotcov, A.; Huang, Y. S.; Tsai, D. S.; Tiong, K. K.

    2008-02-01

    Well-aligned densely-packed rutile TiO2 nanocrystals (NCs) have been grown on sapphire (SA) (100) and (012) substrates via metal-organic chemical vapor deposition (MOCVD), using titanium-tetraisopropoxide (TTIP, Ti(OC3H7)4) as a source reagent. The surface morphology as well as structural and spectroscopic properties of the as-deposited NCs were characterized using field-emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), selected-area electron diffractometry (SAED), x-ray diffraction (XRD) and micro-Raman spectroscopy. FESEM micrographs reveal that vertically aligned NCs were grown on SA(100), whereas the NCs on the SA(012) were grown with a tilt angle of ~33° from the normal to substrates. TEM and SAED measurements showed that the TiO2 NCs on SA(100) with square cross section have their long axis directed along the [001] direction. The XRD results reveal TiO2 NCs with either (002) orientation on SA(100) substrate or (101) orientation on SA(012) substrate. A strong substrate effect on the alignment of the growth of TiO2 NCs has been demonstrated and the probable mechanism for the formation of these NCs has been discussed.

  2. Synthesis of Poly-Silicon Thin Films on Glass Substrate Using Laser Initiated Metal Induced Crystallization of Amorphous Silicon for Space Power Application

    Science.gov (United States)

    Abu-Safe, Husam H.; Naseem, Hameed A.; Brown, William D.

    2007-01-01

    Poly-silicon thin films on glass substrates are synthesized using laser initiated metal induced crystallization of hydrogenated amorphous silicon films. These films can be used to fabricate solar cells on low cost glass and flexible substrates. The process starts by depositing 200 nm amorphous silicon films on the glass substrates. Following this, 200 nm of sputtered aluminum films were deposited on top of the silicon layers. The samples are irradiated with an argon ion cw laser beam for annealing. Laser power densities ranging from 4 to 9 W/cm2 were used in the annealing process. Each area on the sample is irradiated for a different exposure time. Optical microscopy was used to examine any cracks in the films and loss of adhesion to the substrates. X-Ray diffraction patterns from the initial results indicated the crystallization in the films. Scanning electron microscopy shows dendritic growth. The composition analysis of the crystallized films was conducted using Energy Dispersive x-ray Spectroscopy. The results of poly-silicon films synthesis on space qualified flexible substrates such as Kapton are also presented.

  3. Oxidations of Organic and Inorganic Substrates by Superoxo-, hydroperoxo-, and oxo-compounds of the transition metals.

    Energy Technology Data Exchange (ETDEWEB)

    Vasbinder, Michael John [Iowa State Univ., Ames, IA (United States)

    2006-01-01

    fitting the observed rate constants to the Hammett correlation. It was found that the values of the Hammett reaction constant PN were -1.0(1) for 4-nitro-2-methylpyridine-N-oxide and -2.6(4) for 4-methylpyridine-N-oxide as substrates. The negative value confirms pyridine is acting as a nucleophile. Nucleophiles other than pyridine derivatives were also tested. In the end, it was found that the most effective nucleophiles were the pyridine-N-oxides themselves, meaning that a second equivalent of substrate serves as the most efficient promoter of this oxygen-atom transfer reaction. This relative nucleophilicity of pyridines and pyridine-N-oxides is similar to what is observed in other OAT reactions generating high-valent metal-oxo species.

  4. Epitaxial growth and multiferroic properties of cation-engineered (Bi{sub 0.45}La{sub 0.05}Ba{sub 0.5})(Fe{sub 0.75}Nb{sub 0.25})O{sub 3} thin film on Ir-buffered (0 0 1) MgO substrate

    Energy Technology Data Exchange (ETDEWEB)

    Paik, Hanjong [Department of Materials Science and Engineering, Cornell University, Ithaca NY 14853 (United States); Kim, Hyun-Suk [Department of Materials Engineering, Chungnam University, Daejeon 305-764 (Korea, Republic of); Hong, Jongin, E-mail: hongj@cau.ac.kr [Department of Chemistry, Chung-Ang University, 84 Heukseok-ro, Dongjak-gu, Seoul 156-756 (Korea, Republic of)

    2015-04-15

    Highlights: • Epitaxial (Bi{sub 0.45}La{sub 0.05}Ba{sub 0.5})(Fe{sub 0.75}Nb{sub 0.25})O{sub 3} thin film was grown on the Ir-buffered (0 0 1) MgO substrate by pulsed laser deposition. • Its ferroelectric polarization switching was investigated by piezoresponse force microscopy. • Its ferromagnetic hysteresis at room temperature and ferrimagnetic–ferromagnetic transition at low temperature were evaluated. • Artificial A- and B-site cation engineering would result in stable multiferroic properties at room temperature. - Abstract: An epitaxial (Bi{sub 0.45}La{sub 0.05}Ba{sub 0.5})(Fe{sub 0.75}Nb{sub 0.25})O{sub 3} (BLB-FNO) thin film was successfully grown on an Ir-buffered (0 0 1) MgO substrate by pulsed laser deposition (PLD). The “cube-on-cube” epitaxial relation, (0 0 1)[1 0 0] BLB-FNO//(0 0 1)[1 0 0] Ir//(0 0 1)[1 0 0] MgO, was confirmed by X-ray diffraction (XRD) pole figures and cross-sectional high-resolution transmission electron microscopy (HRTEM). The ferroelectric polarization switching of the BLB-FNO thin film was investigated by piezoresponse force microscopy (PFM). Its magnetic properties, such as ferromagnetic hysteresis at room temperature and possible magnetic transition at low temperature, were also evaluated. Accordingly, we successfully demonstrated that artificial A- and B-site cation engineering would allow for stable multiferroic properties at room temperature.

  5. Workshop on moisture buffer capacity

    DEFF Research Database (Denmark)

    2003-01-01

    Summary report of a Nordtest workshop on moisture buffer capacity held at Copenhagen August 21-22 2003......Summary report of a Nordtest workshop on moisture buffer capacity held at Copenhagen August 21-22 2003...

  6. Buffer layers for superconducting Y-Ba-Cu-O thin films on silicon and SiO sub 2

    Energy Technology Data Exchange (ETDEWEB)

    Reus, R. de; Saris, F.W. (FOM-Institute for Atomic and Molecular Physics, Amsterdam (Netherlands)); Kolk, G.J. van der; Witmer, C.; Dam, B. (Philips Research Labs., Eindhoven (Netherlands)); Blank, D.H.A.; Adelerhof, D.J.; Flokstra, J. (Twente Univ., Enschede (Netherlands))

    1990-09-01

    By direct deposition onto hot substrates, using laser ablation, crystalline YBa{sub 2}Cu{sub 3}O{sub 7-{delta}} (123) was obtained at 650deg C on SiO{sub 2}, but not on (100) Si substrates. The 123 film did not show a superconducting transition due to interfacial reactions. The failure temperature of insulating buffer layers, such as tantalum oxide and hafnium oxide, is around 500deg C. Although MgO and BaZrO{sub 3} show a high stability in contact with 123 at 900deg C, they fail as a diffusion barrier at much lower temperatures. Below 400deg C barium diffuses through MgO, which itself remains unaffected. Using BaZrO{sub 3} the same happens around 700deg C. BaF{sub 2} fails as a diffusion barrier below 400deg C. Using laser ablation, high quality 123 films were grown on ZrO{sub 2} buffer layers above 650deg C. For the first time we report superconducting transitions of 123 deposited at 650deg C onto an amorphous metal alloy, Ir{sub 45}Ta{sub 55}. The problems encountered using conducting buffer layers are either a low reaction temperature with 123 (HfB{sub 2} and HfN) or oxidation of the metal alloy (Ir{sub 45}Ta{sub 55}) around 400deg C. Intermediate noble metal layers silver and Ag/Au/Ag could not prevent oxygen diffusion towards the underlying buffer layer. (orig.).

  7. Synthesis of Gold Nanoparticles with Buffer-Dependent Variations of Size and Morphology in Biological Buffers

    Science.gov (United States)

    Ahmed, Syed Rahin; Oh, Sangjin; Baba, Rina; Zhou, Hongjian; Hwang, Sungu; Lee, Jaebeom; Park, Enoch Y.

    2016-02-01

    The demand for biologically compatible and stable noble metal nanoparticles (NPs) has increased in recent years due to their inert nature and unique optical properties. In this article, we present 11 different synthetic methods for obtaining gold nanoparticles (Au NPs) through the use of common biological buffers. The results demonstrate that the sizes, shapes, and monodispersity of the NPs could be varied depending on the type of buffer used, as these buffers acted as both a reducing agent and a stabilizer in each synthesis. Theoretical simulations and electrochemical experiments were performed to understand the buffer-dependent variations of size and morphology exhibited by these Au NPs, which revealed that surface interactions and the electrostatic energy on the (111) surface of Au were the determining factors. The long-term stability of the synthesized NPs in buffer solution was also investigated. Most NPs synthesized using buffers showed a uniquely wide range of pH stability and excellent cell viability without the need for further modifications.

  8. Synthesis of Gold Nanoparticles with Buffer-Dependent Variations of Size and Morphology in Biological Buffers.

    Science.gov (United States)

    Ahmed, Syed Rahin; Oh, Sangjin; Baba, Rina; Zhou, Hongjian; Hwang, Sungu; Lee, Jaebeom; Park, Enoch Y

    2016-12-01

    The demand for biologically compatible and stable noble metal nanoparticles (NPs) has increased in recent years due to their inert nature and unique optical properties. In this article, we present 11 different synthetic methods for obtaining gold nanoparticles (Au NPs) through the use of common biological buffers. The results demonstrate that the sizes, shapes, and monodispersity of the NPs could be varied depending on the type of buffer used, as these buffers acted as both a reducing agent and a stabilizer in each synthesis. Theoretical simulations and electrochemical experiments were performed to understand the buffer-dependent variations of size and morphology exhibited by these Au NPs, which revealed that surface interactions and the electrostatic energy on the (111) surface of Au were the determining factors. The long-term stability of the synthesized NPs in buffer solution was also investigated. Most NPs synthesized using buffers showed a uniquely wide range of pH stability and excellent cell viability without the need for further modifications. PMID:26847691

  9. Synthesis of Gold Nanoparticles with Buffer-Dependent Variations of Size and Morphology in Biological Buffers.

    Science.gov (United States)

    Ahmed, Syed Rahin; Oh, Sangjin; Baba, Rina; Zhou, Hongjian; Hwang, Sungu; Lee, Jaebeom; Park, Enoch Y

    2016-12-01

    The demand for biologically compatible and stable noble metal nanoparticles (NPs) has increased in recent years due to their inert nature and unique optical properties. In this article, we present 11 different synthetic methods for obtaining gold nanoparticles (Au NPs) through the use of common biological buffers. The results demonstrate that the sizes, shapes, and monodispersity of the NPs could be varied depending on the type of buffer used, as these buffers acted as both a reducing agent and a stabilizer in each synthesis. Theoretical simulations and electrochemical experiments were performed to understand the buffer-dependent variations of size and morphology exhibited by these Au NPs, which revealed that surface interactions and the electrostatic energy on the (111) surface of Au were the determining factors. The long-term stability of the synthesized NPs in buffer solution was also investigated. Most NPs synthesized using buffers showed a uniquely wide range of pH stability and excellent cell viability without the need for further modifications.

  10. Comparison of corrosion behaviors between SS304 and Ti substrate coated with (Ti,Zr)N thin films as Metal bipolar plate for unitized regenerative fuel cell

    International Nuclear Information System (INIS)

    In this study, a (Ti,Zr)N coating consisting of nano-composite structure of the TiN and ZrN phases is deposited on SS304 and titanium substrates as the metal bipolar plate through the cathodic arc evaporation techniques. This improves the corrosion resistance of SS304 and Ti metal when used in a unitized regenerative fuel cell (URFC). The corrosion behaviors of these two substrates are compared. Scanning electron microscope, energy dispersive spectrometer, and X-ray diffractometer are used to characterize the microstructure, thickness, chemical composition, as well as crystalline and phase states of the deposited thin films. The potentiodynamic polarization of the (Ti,Zr)N coating is tested in a simulated URFC H2 environment, i.e., 0.50 M H2SO4 with 3 ppm NaF solution purging with H2 gas at 60 °C. Experimental results demonstrate that the (Ti,Zr)N coating improves the corrosion resistance of SS304 (about 215 times that of uncoated SS304) better than that of the Ti substrate (about 200 times that of uncoated Ti). The enhanced corrosion resistance is attributed to the nano-composite structure of TiN and ZrN, which has a dense and columnar microstructure that is impermeable to a corrosive medium. The coating of the (Ti,Zr)N layer has better corrosion resistance than the increased sheet resistance for both substrates. Therefore, the (Ti,Zr)N–SS304 and (Ti,Zr)N–Ti samples, specifically the (Ti,Zr)N–SS304 sample, are good candidates as the material for URFC H2 side metal bipolar plate. - Highlights: • A (Ti,Zr)N coating is deposited on SS304 and titanium substrates. • This coating contains a nano-composite structure of TiN and ZrN phases. • Effective improvement of corrosion resistance on substrates has been obtained. • Coating on SS304 has better enhancement of corrosion resistance than that on Ti. • It can be used for bipolar-plate material of the unitized regenerative fuel cell

  11. Ceramic barrier layers for flexible thin film solar cells on metallic substrates: a laboratory scale study for process optimization and barrier layer properties.

    Science.gov (United States)

    Delgado-Sanchez, Jose-Maria; Guilera, Nuria; Francesch, Laia; Alba, Maria D; Lopez, Laura; Sanchez, Emilio

    2014-11-12

    Flexible thin film solar cells are an alternative to both utility-scale and building integrated photovoltaic installations. The fabrication of these devices over electrically conducting low-cost foils requires the deposition of dielectric barrier layers to flatten the substrate surface, provide electrical isolation between the substrate and the device, and avoid the diffusion of metal impurities during the relatively high temperatures required to deposit the rest of the solar cell device layers. The typical roughness of low-cost stainless-steel foils is in the hundred-nanometer range, which is comparable or larger than the thin film layers comprising the device and this may result in electrical shunts that decrease solar cell performance. This manuscript assesses the properties of different single-layer and bilayer structures containing ceramics inks formulations based on Al2O3, AlN, or Si3N4 nanoparticles and deposited over stainless-steel foils using a rotogravure printing process. The best control of the substrate roughness was achieved for bilayers of Al2O3 or AlN with mixed particle size, which reduced the roughness and prevented the diffusion of metals impurities but AlN bilayers exhibited as well the best electrical insulation properties.

  12. Structure and energetics of benzene adsorbed on transition-metal surfaces: density-functional theory with van der Waals interactions including collective substrate response

    International Nuclear Information System (INIS)

    The adsorption of benzene on metal surfaces is an important benchmark system for hybrid inorganic/organic interfaces. The reliable determination of the interface geometry and binding energy presents a significant challenge for both theory and experiment. Using the Perdew–Burke–Ernzerhof (PBE), PBE + vdW (van der Waals) and the recently developed PBE + vdWsurf (density-functional theory with vdW interactions that include the collective electronic response of the substrate) methods, we calculated the structures and energetics for benzene on transition-metal surfaces: Cu, Ag, Au, Pd, Pt, Rh and Ir. Our calculations demonstrate that vdW interactions increase the binding energy by more than 0.70 eV for physisorbed systems (Cu, Ag and Au) and by an even larger amount for strongly bound systems (Pd, Pt, Rh and Ir). The collective response of the substrate electrons captured via the vdWsurf method plays a significant role for most substrates, shortening the equilibrium distance by 0.25 Å for Cu and decreasing the binding energy by 0.27 eV for Rh. The reliability of our results is assessed by comparison with calculations using the random-phase approximation including renormalized single excitations, and the experimental data from temperature-programmed desorption, microcalorimetry measurements and low-energy electron diffraction. (paper)

  13. Aggregation and adhesion of gold nanoparticles in phosphate buffered saline

    Energy Technology Data Exchange (ETDEWEB)

    Du Shangfeng, E-mail: s.du@bham.ac.uk; Kendall, Kevin; Toloueinia, Panteha; Mehrabadi, Yasamin; Gupta, Gaurav; Newton, Jill [University of Birmingham, School of Chemical Engineering (United Kingdom)

    2012-03-15

    In applications in medicine and more specifically drug delivery, the dispersion stability of nanoparticles plays a significant role on their final performances. In this study, with the use of two laser technologies, dynamic light scattering (DLS) and nanoparticle tracking analysis (NTA), we report a simple method to estimate the stability of nanoparticles dispersed in phosphate buffered saline (PBS). Stability has two features: (1) self-aggregation as the particles tend to stick to each other; (2) disappearance of particles as they adhere to surrounding substrate surfaces such as glass, metal, or polymer. By investigating the effects of sonication treatment and surface modification by five types of surfactants, including nonylphenol ethoxylate (NP9), polyvinyl pyrrolidone (PVP), human serum albumin (HSA), sodium dodecyl sulfate (SDS) and citrate ions on the dispersion stability, the varying self-aggregation and adhesion of gold nanoparticles dispersed in PBS are demonstrated. The results showed that PVP effectively prevented aggregation, while HSA exhibited the best performance in avoiding the adhesion of gold nanoparticle in PBS onto glass and metal. The simple principle of this method makes it a high potential to be applied to other nanoparticles, including virus particles, used in dispersing and processing.

  14. Effect of the substrate on the properties of ZnO-MgO thin films grown by atmospheric pressure metal-organic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Torres-Huerta, A.M., E-mail: atohuer@hotmail.com [Instituto Politecnico Nacional, Grupo de Ingenieria en Procesamiento de Materiales CICATA-IPN, Unidad Altamira, km 14.5, Carretera Tampico-Puerto Industrial Altamira. C. P. 89600, Altamira, Tamps (Mexico); Dominguez-Crespo, M.A. [Instituto Politecnico Nacional, Grupo de Ingenieria en Procesamiento de Materiales CICATA-IPN, Unidad Altamira, km 14.5, Carretera Tampico-Puerto Industrial Altamira. C. P. 89600, Altamira, Tamps (Mexico); Brachetti-Sibaja, S.B. [Alumna del postgrado en Tecnologia Avanzada del CICATA-IPN, Unidad Altamira IPN, km 14.5, Carretera Tampico-Puerto Industrial Altamira. C. P. 89600, Altamira, Tamps (Mexico); Arenas-Alatorre, J. [Instituto de Fisica, UNAM, Apartado Postal 20-364, 01000, D.F. (Mexico); Rodriguez-Pulido, A. [Unidad Profesional Adolfo Lopez Mateos, Luis Enrique Erro s/n, 07738, D. F. (Mexico)

    2011-07-01

    The ZnO-MgO alloys possess attractive properties for possible applications in optoelectronic and display devices; however, the optical properties are strongly dependent on the deposition parameters. In this work, the effect of the glassy and metallic substrates on the structural, morphological and optical properties of ZnO-MgO thin films using atmospheric pressure metal-organic chemical vapor deposition was investigated at relatively low deposition temperature, 500 deg. C. Magnesium and zinc acetylacetonates were used as the metal-organic source. X-ray diffraction experiments provided evidence that the kind of substrates cause a deviation of c-axis lattice constant due to the constitution of a oxide mixture (ZnO and MgO) in combination with different intermetallic compounds(Mg{sub 2}Zn{sub 11} and Mg{sub 4}Zn{sub 7}) in the growth films. The substitutional and interstitial sites of Mg{sup 2+} instead of Zn{sup 2+} ions in the lattice are the most probable mechanism to form intermetallic compounds. The optical parameters as well as thickness of the films were calculated by Spectroscopic Ellipsometry using the classical dispersion model based on the sum of the single and double Lorentz and Drude oscillators in combination with Kato-Adachi equations, as well as X-ray reflectivity.

  15. Effect of the substrate on the properties of ZnO-MgO thin films grown by atmospheric pressure metal-organic chemical vapor deposition

    International Nuclear Information System (INIS)

    The ZnO-MgO alloys possess attractive properties for possible applications in optoelectronic and display devices; however, the optical properties are strongly dependent on the deposition parameters. In this work, the effect of the glassy and metallic substrates on the structural, morphological and optical properties of ZnO-MgO thin films using atmospheric pressure metal-organic chemical vapor deposition was investigated at relatively low deposition temperature, 500 deg. C. Magnesium and zinc acetylacetonates were used as the metal-organic source. X-ray diffraction experiments provided evidence that the kind of substrates cause a deviation of c-axis lattice constant due to the constitution of a oxide mixture (ZnO and MgO) in combination with different intermetallic compounds(Mg2Zn11 and Mg4Zn7) in the growth films. The substitutional and interstitial sites of Mg2+ instead of Zn2+ ions in the lattice are the most probable mechanism to form intermetallic compounds. The optical parameters as well as thickness of the films were calculated by Spectroscopic Ellipsometry using the classical dispersion model based on the sum of the single and double Lorentz and Drude oscillators in combination with Kato-Adachi equations, as well as X-ray reflectivity.

  16. Structural and electrical properties of 0.7Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3}-0.3PbTiO{sub 3} thin films grown on Ir/MgO buffered Si(100) substrates

    Energy Technology Data Exchange (ETDEWEB)

    Wu, F.; Zhang, X. [Chinese Academy of Sciences, State Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Shanghai (China); Graduate School of Chinese Academy of Science, Beijing (China); Li, X.M.; Yu, W.D.; Gao, X.D. [Chinese Academy of Sciences, State Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Shanghai (China)

    2007-09-15

    Thin films of 0.7Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3}-0.3PbTiO{sub 3} (PMN-PT) have been grown on Ir/MgO buffered Si(100) substrates at different substrate temperatures by pulsed laser deposition. Crystalline phases as well as preferred orientations in the PMN-PT films were investigated by X-ray diffraction analysis (XRD). The microstructure, dielectric and ferroelectric properties of PMN-PT film prepared at 650 C were studied. The results show that the film prepared at 650 C exhibits pure perovskite phase and single c-axis orientation. The dielectric constant and dissipation factor of the single c-axis oriented film are 1000 and 0.04 at a frequency of 1 kHz, while the remnant polarization and coercive field are about 13.0 {mu}C/cm{sup 2} and 100 kV/cm under an electric field of 480 kV/cm, respectively. (orig.)

  17. Propagation of misfit dislocations from buffer/Si interface into Si

    Science.gov (United States)

    Liliental-Weber, Zuzanna; Maltez, Rogerio Luis; Morkoc, Hadis; Xie, Jinqiao

    2011-08-30

    Misfit dislocations are redirected from the buffer/Si interface and propagated to the Si substrate due to the formation of bubbles in the substrate. The buffer layer growth process is generally a thermal process that also accomplishes annealing of the Si substrate so that bubbles of the implanted ion species are formed in the Si at an appropriate distance from the buffer/Si interface so that the bubbles will not migrate to the Si surface during annealing, but are close enough to the interface so that a strain field around the bubbles will be sensed by dislocations at the buffer/Si interface and dislocations are attracted by the strain field caused by the bubbles and move into the Si substrate instead of into the buffer epi-layer. Fabrication of improved integrated devices based on GaN and Si, such as continuous wave (CW) lasers and light emitting diodes, at reduced cost is thereby enabled.

  18. Investigating the episodic buffer

    Directory of Open Access Journals (Sweden)

    Alan Baddeley

    2010-10-01

    Full Text Available A brief account is presented of the three-component working memory model proposed by Baddeley and Hitch. This is followed by an account of some of the problems it encountered in explaining how information from different subsystems with different codes could be combined, and how it was capable of communicating with long-term memory. In order to account for these, a fourth component was proposed, the episodic buffer. This was assumed to be a multidimensional store of limited capacity that can be accessed through conscious awareness. In an attempt to test and develop the concept, a series of experiments have explored the role of working memory in the binding of visual features into objects and verbal sequences into remembered sentences. The experiments use a dual task paradigm to investigate the role of the various subcomponents of working memory in binding. In contrast to our initial assumption, the episodic buffer appears to be a passive store, capable of storing bound features and making them available to conscious awareness, but not itself responsible for the process of binding.

  19. Bridged bis(beta-cyclodextrin)s possessing coordinated metal center(s) and their inclusion complexation behavior with model substrates: enhanced molecular binding ability by multiple recognition.

    Science.gov (United States)

    Liu, Y; Chen, Y; Li, L; Zhang, H Y; Liu, S X; Guan, X D

    2001-12-14

    To investigate quantitatively the cooperative binding ability of several beta-cyclodextrin oligomers bearing single or multiligated metal center(s), the inclusion complexation behavior of four bis(beta-cyclodextrin)s (2-5) linked by 2,2'-bipyridine-4,4'-dicarboxy tethers and their copper(II) complexes (6-9) with representative dye guests, i.e., methyl orange (MO), acridine red (AR), rhodamine B (RhB), ammonium 8-anilino-1-naphthalenesulfonic acid (ANS), and sodium 6-(p-toludino)-2-naphthalenesulfonate (TNS), have been examined in aqueous solution at 25 degrees C by means of UV-vis, circular dichroism, fluorescence, and 2D NMR spectroscopy. The results obtained indicate that bis(beta-cyclodextrin)s 2-5 can associate with one or three copper(II) ion(s) producing 2:1 or 2:3 bis(beta-cyclodextrin)-copper(II) complexes. These metal-ligated oligo(beta-cyclodextrin)s can bind two model substrates to form intramolecular 2:2 host-guest inclusion complexes and thus significantly enhance the original binding abilities of parent beta-cyclodextrin and bis(beta-cyclodextrin) toward model substrates through the cooperative binding of two guest molecules by four tethered cyclodextrin moieties, as well as the additional binding effect supplied by ligated metal center(s). Host 6 showed the highest enhancement of the stability constant, up to 38.3 times for ANS as compared with parent beta-cyclodextrin. The molecular binding mode and stability constant of substrates by bridged bis- and oligo(beta-cyclodextrin)s 2-9 are discussed from the viewpoint of the size/shape-fit interaction and molecular multiple recognition between host and guest.

  20. Laser-direct process of Cu nano-ink to coat highly conductive and adhesive metallization patterns on plastic substrate

    Science.gov (United States)

    Min, Hyungsuk; Lee, Byoungyoon; Jeong, Sooncheol; Lee, Myeongkyu

    2016-05-01

    We here present a simple, low-cost laser-direct process to fabricate conductive Cu patterns on plastic substrate. A Cu nano-ink was synthesized using Cu formate as a precursor. The Cu ink spin-coated on a polyimide substrate was selectively sintered using a pulsed ultraviolet laser beam. The unexposed regions of the coated ink could be removed by rinsing the whole film in the dispersion agent of the synthesized ink, which revealed a conductive Cu pattern. This allowed sintering and patterning to be simultaneously accomplished, with a minimum line width of ~20 μm available. The fabricated pattern remained strongly adhesive to the substrate and exhibited only a slight increase in resistance even after 1000 bending cycles to a radius of curvature of 4.8 mm.

  1. Growth of Cu{sub 2}ZnSnS{sub 4} absorber layer on flexible metallic substrates for thin film solar cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Yazici, Sebnem [Department of Physics, Izmir Institute of Technology, Urla, Izmir 35430 (Turkey); Olgar, Mehmet Ali [Department of Physics, Karadeniz Technical University, Trabzon (Turkey); Akca, Fatime Gulsah; Cantas, Ayten; Kurt, Metin; Aygun, Gulnur; Tarhan, Enver [Department of Physics, Izmir Institute of Technology, Urla, Izmir 35430 (Turkey); Yanmaz, Ekrem [Department of Physics, Karadeniz Technical University, Trabzon (Turkey); Ozyuzer, Lutfi, E-mail: ozyuzer@iyte.edu.tr [Department of Physics, Izmir Institute of Technology, Urla, Izmir 35430 (Turkey)

    2015-08-31

    In this work, Cu{sub 2}ZnSnS{sub 4} (CZTS) absorber layers were fabricated using a two-stage process. Sequentially deposited Cu–Zn–Sn thin film layers on metallic foils were annealed in an Ar + S{sub 2(g)} atmosphere. We aimed to investigate the role of flexible titanium and molybdenum foil substrates in the growth mechanism of CZTS thin films. The Raman spectra and X-ray photoelectron spectroscopy analyses of the sulfurized thin films revealed that, except for the presence of Sn-based secondary phases, nearly pure CZTS thin films were obtained. Additionally, the intense and sharp X-ray diffraction peak from the (112) plane provided evidence of good crystallinity. Electron dispersive spectroscopy analysis indicated sufficient sulfur content but poor Zn atomic weight percentage in the films. Absorption and band-gap energy analyses were carried out to confirm the suitability of CZTS thin films as the absorber layer in solar cell applications. Hall effect measurements showed the p-type semiconductor behavior of the CZTS samples. Moreover, the back contact behavior of these metallic flexible substrates was investigated and compared. We detected formation of cracks in the CZTS layer on the molybdenum foils, which indicates the incompatibility of molybdenum's thermal expansion coefficient with the CZTS structure. We demonstrated the application of the magnetron sputtering technique for the fabrication of CZTS thin films on titanium foils having lightweight, flexible properties and suitable for roll-to-roll manufacturing for high throughput fabrication. Titanium foils are also cost competitive compared to molybdenum foils. - Highlights: • Growth of CZTS layer for thin film solar cell applications • CZTS growth on metallic flexible foil substrates by magnetron sputtering technique • Lightweight and flexible substrate is feasible for roll-to-roll manufacturing. • Crack formation on Mo foil substrate due to mismatch of CTE between Mo and CZTS • Ti foil is

  2. GaAs Photovoltaics on Polycrystalline Ge Substrates

    Science.gov (United States)

    Wilt, David M.; Pal, AnnaMaria T.; McNatt, Jeremiah S.; Wolford, David S.; Landis, Geoffrey A.; Smith, Mark A.; Scheiman, David; Jenkins, Phillip P.; McElroy Bruce

    2007-01-01

    High efficiency III-V multijunction solar cells deposited on metal foil or even polymer substrates can provide tremendous advantages in mass and stowage, particularly for planetary missions. As a first step towards that goal, poly-crystalline p/i/n GaAs solar cells are under development on polycrystalline Ge substrates. Organo Metallic Vapor Phase Epitaxy (OMVPE) parameters for pre-growth bake, nucleation and deposition have been examined. Single junction p/i/n GaAs photovoltaic devices, incorporating InGaP front and back window layers, have been grown and processed. Device performance has shown a dependence upon the thickness of a GaAs buffer layer deposited between the Ge substrate and the active device structure. A thick (2 m) GaAs buffer provides for both increased average device performance as well as reduced sensitivity to variations in grain size and orientation. Illumination under IR light (lambda > 1 micron), the cells showed a Voc, demonstrating the presence of an unintended photoactive junction at the GaAs/Ge interface. The presence of this junction limited the efficiency to approx.13% (estimated with an anti-refection coating) due to the current mismatch and lack of tunnel junction interconnect.

  3. Electronic and magnetic properties of hybrid interfaces. From single molecules to ultra-thin molecular films on metallic substrates

    OpenAIRE

    Gruber, Manuel

    2014-01-01

    Understanding the properties of molecules at the interface with metals is a fundamental issue for organic spintronics. The first part of this thesis is devoted to the study of magnetic properties of planar manganese-phthalocyanine molecules and Co films. The second part of the thesis is focused on the study of a spin-crossover complex, Fe(phen)2(NCS)2 sublimed on different metallic surfaces.

  4. Electroless copper on refractory and noble metal substrates with an ultra-thin plasma-assisted atomic layer deposited palladium layer

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Young-Soon [Thin Film Technology Lab, School of Chemical Engineering, Chonbuk National University, Jeonju 561756 (Korea, Republic of); Kim, Hyung-Il [Thin Film Technology Lab, School of Chemical Engineering, Chonbuk National University, Jeonju 561756 (Korea, Republic of); Cho, Joong-Hee [Thin Film Technology Lab, School of Chemical Engineering, Chonbuk National University, Jeonju 561756 (Korea, Republic of); Seo, Hyung-Kee [Thin Film Technology Lab, School of Chemical Engineering, Chonbuk National University, Jeonju 561756 (Korea, Republic of); Dar, M.A. [Thin Film Technology Lab, School of Chemical Engineering, Chonbuk National University, Jeonju 561756 (Korea, Republic of); Shin, Hyung-Shik [Thin Film Technology Lab, School of Chemical Engineering, Chonbuk National University, Jeonju 561756 (Korea, Republic of); Ten Eyck, Gregory A. [Department of Physics, Rensselaer Polytechnic Institute, Troy, NY 12180 (United States); Lu, Toh-Ming [Department of Physics, Rensselaer Polytechnic Institute, Troy, NY 12180 (United States); Senkevich, Jay J. [Brewer Science Inc., Rolla, MO 65401 (United States)]. E-mail: jsenkevich@brewerscience.com

    2006-02-25

    Electroless Cu was investigated on refractory metal, W and TaN {sub X}, and Ir noble metal substrates with a plasma-assisted atomic layer deposited palladium layer for the potential back-end-of-the-line (BEOL) metallization of advanced integrated devices. The sodium and potassium-free Cu electroless bath consisted of: ethylenediamine tetraacetic acid (EDTA) as a chelating agent, glyoxylic acid as a reducing agent, and additional chemicals such as polyethylene glycol, 2,2'-dipyridine and RE-610 as surfactant, stabilizer and wetting agent respectively. The growth and chemical characterization of the Cu films was carried out with a field emission scanning electron microscope (FE-SEM), X-ray photoelectron spectroscopy (XPS), and Rutherford backscattering spectrometry (RBS). Group VIII metals such as Pt, Pd, etc., are stable in the electroless bath and catalytic towards the oxidation of glyoxylic acid and therefore work well for the electroless deposition of Cu. From RBS analysis, the amount of carbon and oxygen in Cu films were less than 1-3%. The Cu films were electroless deposited at 45-50 deg. C on patterned tantalum nitride with plasma-assisted atomic layer deposited (PA-ALD) Pd as a catalytic layer. Electroless Cu trench fill was successful with ultrasonic vibration, RE-610, and lowering the temperature to 45-50 deg. C on TaN {sub X} with the PA-ALD Pd catalytic layer.

  5. Buffer capacity of biologics--from buffer salts to buffering by antibodies.

    Science.gov (United States)

    Karow, Anne R; Bahrenburg, Sven; Garidel, Patrick

    2013-01-01

    Controlling pH is essential for a variety of biopharmaceutical process steps. The chemical stability of biologics such as monoclonal antibodies is pH-dependent and slightly acidic conditions are favorable for stability in a number of cases. Since control of pH is widely provided by added buffer salts, the current study summarizes the buffer characteristics of acetate, citrate, histidine, succinate, and phosphate buffers. Experimentally derived values largely coincide with values calculated from a model that had been proposed in 1922 by van Slyke. As high concentrated protein formulations become more and more prevalent for biologics, the self-buffering potential of proteins becomes of relevance. The current study provides information on buffer characteristics for pH ranges down to 4.0 and up to 8.0 and shows that a monoclonal antibody at 50 mg/mL exhibits similar buffer capacity as 6 mM citrate or 14 mM histidine (pH 5.0-6.0). Buffer capacity of antibody solutions scales linearly with protein concentration up to more than 200 mg/mL. At a protein concentration of 220 mg/mL, the buffer capacity resembles the buffer capacity of 30 mM citrate or 50 mM histidine (pH 5.0-6.0). The buffer capacity of monoclonal antibodies is practically identical at the process relevant temperatures 5, 25, and 40°C. Changes in ionic strength of ΔI=0.15, in contrast, can alter the buffer capacity up to 35%. In conclusion, due to efficient self-buffering by antibodies in the pH range of favored chemical stability, conventional buffer excipients could be dispensable for pH stabilization of high concentrated protein solutions. PMID:23296746

  6. Growth of TiO2 anti-reflection layer on textured Si (100) wafer substrate by metal-organic chemical vapor deposition method.

    Science.gov (United States)

    Nam, Sang-Hun; Choi, Jin-Woo; Cho, Sang-Jin; Kimt, Keun Soo; Boo, Jin-Hyo

    2011-08-01

    Recently anti-reflective films (AR) have been intensely studied. Particularly for textured silicon solar cells, the AR films can further reduce the reflection of the incident light through trapping the incident light into the cells. In this work, TiO2 anti-reflection films have been grown on the textured Si (100) substrate which is processed in two steps, and the films are deposited using metal-organic chemical vapor deposition (MOCVD) with a precursor of titanium tetra-isopropoxide (TTIP). The effect of the substrate texture and the growth conditions of TiO2 films on the reflectance has been investigated. Pyramid size of textured silicon had approximately 2-9 microm. A well-textured silicon surface can lower the reflectance to 10%. For more reduced reflection, TiO2 anti-reflection films on the textured silicon were deposited at 600 degrees C using titanium tetra-isopropoxide (TTIP) as a precursor by metal-organic chemical vapor deposition (MOCVD), and the deposited TiO2 layers were then treated by annealing for 2 h in air at 600 and 1000 degrees C, respectively. In this process, the treated samples by annealing showed anatase and rutile phases, respectively. The thickness of TiO2 films was about 75 +/- 5 nm. The reflectance at specific wavelength can be reduced to 3% in optimum layer. PMID:22103185

  7. Effect of Substrate Movement Speed by Synchronous Rolling-casting Freeform Manufacturing for Metal on Microstructure and Mechanical Property of ZLl04 Aluminum Alloy Slurry

    Institute of Scientific and Technical Information of China (English)

    LUO Xiaoqiang; LI Zhengyang; CHEN Guangnan; XU Wanli; YAN Qingzhi

    2015-01-01

    Synchronous rolling-casting freeform manufacturing for Metal (SRCFMM) means that the refined liquid metal is continuously pressed out from the bottom of crucible. There is a horizontal movable plate beneath the outlet. The clearance between the outlet and the plate is about several hundred micrometers. SRCFMM, similar to additive manufacturing, implies layer by layer shaping and consolidation of feedstock to arbitrary conifgurations, normally using a computer controlled movable plate. The primary dendritic crystal is easily crushed by movement of substrate in the rolling-casting area. ZL104 was used as the test materials, determi-ning the control temperature by differential scanning thermal analysis (DSC), preparing a kind of samples by SR CFMM, then analyzing microstructures and mechanical property of the samples. Characteristics and distribution of the primary particles were assessed by optical microscopy (OM), scanning electron microscopy (SEM), energy dispersive spectrum (EDS) and image analysis software. Mechanical property of the samples was assessed by vickers hardness. The results show that the samples fabricated by SRCFMM have uniform structures and good performances with the velocity of the substrate controlled about 10 cm/s and temperature at about 580℃.

  8. Metal Decoration Effects on the Gas-Sensing Properties of 2D Hybrid-Structures on Flexible Substrates

    Directory of Open Access Journals (Sweden)

    Byungjin Cho

    2015-09-01

    Full Text Available We have investigated the effects of metal decoration on the gas-sensing properties of a device with two-dimensional (2D molybdenum disulfide (MoS2 flake channels and graphene electrodes. The 2D hybrid-structure device sensitively detected NO2 gas molecules (>1.2 ppm as well as NH3 (>10 ppm. Metal nanoparticles (NPs could tune the electronic properties of the 2D graphene/MoS2 device, increasing sensitivity to a specific gas molecule. For instance, palladium NPs accumulate hole carriers of graphene/MoS2, electronically sensitizing NH3 gas molecules. Contrarily, aluminum NPs deplete hole carriers, enhancing NO2 sensitivity. The synergistic combination of metal NPs and 2D hybrid layers could be also applied to a flexible gas sensor. There was no serious degradation in the sensing performance of metal-decorated MoS2 flexible devices before/after 5000 bending cycles. Thus, highly sensitive and endurable gas sensor could be achieved through the metal-decorated 2D hybrid-structure, offering a useful route to wearable electronic sensing platforms.

  9. Universal buffers for use in biochemistry and biophysical experiments

    Directory of Open Access Journals (Sweden)

    Dewey Brooke

    2015-08-01

    Full Text Available The use of buffers that mimic biological solutions is a foundation of biochemical and biophysical studies. However, buffering agents have both specific and nonspecific interactions with proteins. Buffer molecules can induce changes in conformational equilibria, dynamic behavior, and catalytic properties merely by their presence in solution. This effect is of concern because many of the standard experiments used to investigate protein structure and function involve changing solution conditions such as pH and/or temperature. In experiments in which pH is varied, it is common practice to switch buffering agents so that the pH is within the working range of the weak acid and conjugate base. If multiple buffers are used, it is not always possible to decouple buffer induced change from pH or temperature induced change. We have developed a series of mixed biological buffers for protein analysis that can be used across a broad pH range, are compatible with biologically relevant metal ions, and avoid complications that may arise from changing the small molecule composition of buffers when pH is used as an experimental variable.

  10. Pb-Free Glass Paste: A Metallization-Free Die-Attachment Solution for High-Temperature Application on Ceramic Substrates

    Science.gov (United States)

    Sharif, Ahmed; Lim, Jun zhang; Made, Riko I.; Lau, Fu Long; Phua, Eric Jian Rong; Lim, Ju Dy; Wong, Chee Cheong; Gan, Chee Lip; Chen, Zhong

    2013-08-01

    A lead-free glass frit paste as a die-attach material for high-temperature microelectronic application is proposed in this study. The glass paste containing Bi-based powder with a moderate amount of solvent was used for joining Si dice on ceramic substrates without any metallization preparation for either of the bonding surfaces. The die was bonded to a ceramic substrate at 430°C for 10 min. The study focuses on the mechanical and microstructural characterization of the joints with Si dice on two different types of ceramic substrate. Shear strength measurements were carried out at both ambient and 250°C to evaluate room- and high-temperature performance. Furthermore, the effect of aging at 300°C for 500 h on the mechanical properties is presented. The results of the mechanical and microstructural characterization demonstrate that low-temperature glass frit bonding is an effective die-attach method for harsh-environment electronic packaging.

  11. Growth of TiO2 nanorods on a Ta substrate by metal-organic chemical vapor deposition.

    Science.gov (United States)

    Lee, Kang Suk; Hyun, Jae-Sung; Seo, Hyun Ook; Kim, Young Dok; Boo, Jin-Hyo

    2010-05-01

    TiO2 nanorods were successfully grown on Tantalum (Ta) substrates using titanium tetra isopropoxide (TTIP) as a single precursor without any carriers or bubbling gases. For characterization of the TiO2 structures, scanning electron microscopy (SEM), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS) were employed. For substrate temperatures below 800 degrees C, a rough film structure without nanorods could be found. However, at a sample temperature of 800 degrees C, nanorod structures with a respective diameter and length of 0.1 approximately 0.2 microm and 0.7 approximately 1.5 microm, respectively, could be synthesized. The nanorods exhibited a rutile phase with a 2:1 stoichiometry of O:Ti, identified using XRD and XPS. When the growth temperature exceeded 800 degrees C, agglomeration of the nanorods was identified. PMID:20358953

  12. Scanning Tunneling Spectroscopic Studies of the Effects of Dielectrics and Metallic Substrates on the Local Electronic Characteristics of Graphene

    OpenAIRE

    Yeh, N.-C.; Teague, M.-L.; Boyd, D A; Bockrath, M. W.; Velasco, J.; Lau, C.-N.

    2010-01-01

    Atomically resolved imaging and spectroscopic characteristics of graphene grown by chemical vapor deposition (CVD) on copper foils are investigated and compared with those of mechanical exfoliated graphene on SiO_2. For exfoliated graphene, the local spectral deviations from ideal behavior may be attributed to strain induced by the SiO_2 substrate. For CVD grown graphene, the lattice structure appears strongly distorted by the underlying copper, with regions in direct con...

  13. Evaluation of shear bond strengths of gingiva-colored composite resin to porcelain, metal and zirconia substrates

    OpenAIRE

    An, Hong-Seok; Park, Ji-Man; Park, Eun-Jin

    2011-01-01

    PURPOSE The purpose of this study is to evaluate and compare the shear bond strength of the gingiva-colored composite resin and the tooth-colored composite resin to porcelain, metal and zirconia. MATERIALS AND METHODS Sixty cylindrical specimens were fabricated and divided into the following 6 groups (Group 1-W: tooth-colored composite bonded to porcelain, Group 1-P: gingiva-colored composite bonded to porcelain, Group 2-W: tooth-colored composite bonded to base metal, Group 2-P: gingiva-colo...

  14. PLZT capacitor on glass substrate

    Energy Technology Data Exchange (ETDEWEB)

    Fairchild, Manuel Ray; Taylor, Ralph S.; Berlin, Carl W.; Wong, Celine Wk; Ma, Beihai; Balachandran, Uthamalingam

    2016-03-29

    A lead-lanthanum-zirconium-titanate (PLZT) capacitor on a substrate formed of glass. The first metallization layer is deposited on a top side of the substrate to form a first electrode. The dielectric layer of PLZT is deposited over the first metallization layer. The second metallization layer deposited over the dielectric layer to form a second electrode. The glass substrate is advantageous as glass is compatible with an annealing process used to form the capacitor.

  15. Studies of metal ammonia interactions with aromatic substrates: Progress report for the period February 1, 1987 to December 31, 1987

    Energy Technology Data Exchange (ETDEWEB)

    Rabideau, P.W.

    1987-07-01

    This report details the accomplishments since the previous report which was submitted for the activities of 1986. A brief description is provided relating to publications and presentations. Technical work in progress which is not available in reprint form is also described. This includes metal-ammonia reduction results, NMR analysis of hydroaromatics and theoretical calculations on hydroaromatics anions.

  16. Toxic effects of heavy metals in three worm species exposed in artificially contaminated soil substrates and contaminated field soils

    NARCIS (Netherlands)

    Posthuma L; Notenboom J; ECO

    1996-01-01

    The toxicity of chemicals is often determined in standardised laboratory experiments. OECD artificial soil (artisoil) is often used to determine chemical toxicity for soil organisms. This report presents exposure and effect assessments of metals for three worm species (Eisenia andrei, Enchytraeus cr

  17. New methanofullerene as a buffer layer in organic solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Biglova, Yulia N., E-mail: bn.yulya@mail.ru [Bashkir State University, Chemistry Department, Ufa (Russian Federation); Akbulatov, Azat F. [Bashkir State University, Chemistry Department, Ufa (Russian Federation); Torosyan, Seda A. [Institute of Organic Chemistry URC RAS, Ufa (Russian Federation); Susarova, Diana K. [Institute for Problems of Chemical Physics RAS, Chernogolovka (Russian Federation); Mustafin, Akhat G. [Bashkir State University, Chemistry Department, Ufa (Russian Federation); Miftakhov, Mansur S. [Institute of Organic Chemistry URC RAS, Ufa (Russian Federation)

    2015-02-01

    The influence of the first synthesized acryl-type methanofullerene C{sub 60} on the solar cell performance as a buffer layer and its forming methods on the substrate surface was investigated. The significant impact of small concentration on the basic photovoltaic characteristics of the fabricated devices with inverted configurations was shown in this work.

  18. Preparation and Characterization of CeO2/YSZ/CeO2 Buffer Layers for YBCO Coated Conductors

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    CeO2 seed layer was deposited on rolling-assisted biaxially textured metal substrates by direct-current (DC) magnetron reactive sputtering. The effect of deposition temperature on epitaxial orientation of CeO2 thin films was examined. High quality CeO2 layers were achieved at deposition temperature from 750℃ to 850℃.Subsequently yttria-stabilized zirconia (YSZ) and CeO2 films were deposited to complete the buffer layer structure via the same process. The best samples exhibited a highly biaxial texture, as indicated by FWHM (full width half maximum) values in the range of 4°-5°, and 2°-4° for in-plane and out-of-plane orientations,respectively. Secondary ion mass spectrometer analysis confirmed the effective prevention of buffer layer against Ni and W metal interdiffusion. Atomic force microscope observations revealed a smooth, dense and crack-free surface morphology, which provided themselves as the good buffer structure to the YBa2Cu3O7-δ(YBCO) coated conductors.

  19. Mechanisms of buffer therapy resistance.

    Science.gov (United States)

    Bailey, Kate M; Wojtkowiak, Jonathan W; Cornnell, Heather H; Ribeiro, Maria C; Balagurunathan, Yoganand; Hashim, Arig Ibrahim; Gillies, Robert J

    2014-04-01

    Many studies have shown that the acidity of solid tumors contributes to local invasion and metastasis. Oral pH buffers can specifically neutralize the acidic pH of tumors and reduce the incidence of local invasion and metastatic formation in multiple murine models. However, this effect is not universal as we have previously observed that metastasis is not inhibited by buffers in some tumor models, regardless of buffer used. B16-F10 (murine melanoma), LL/2 (murine lung) and HCT116 (human colon) tumors are resistant to treatment with lysine buffer therapy, whereas metastasis is potently inhibited by lysine buffers in MDA-MB-231 (human breast) and PC3M (human prostate) tumors. In the current work, we confirmed that sensitive cells utilized a pH-dependent mechanism for successful metastasis supported by a highly glycolytic phenotype that acidifies the local tumor microenvironment resulting in morphological changes. In contrast, buffer-resistant cell lines exhibited a pH-independent metastatic mechanism involving constitutive secretion of matrix degrading proteases without elevated glycolysis. These results have identified two distinct mechanisms of experimental metastasis, one of which is pH-dependent (buffer therapy sensitive cells) and one which is pH-independent (buffer therapy resistant cells). Further characterization of these models has potential for therapeutic benefit.

  20. Extra-relaxation effects in ultra-thin Al sub 2 O sub 3 films on metal substrates

    CERN Document Server

    Lee, M B; Lee, Y H; Lee, J H; Hahm, S H

    1999-01-01

    The oxidation of NiAl(110) was investigated in the temperature range between 300 K and 1300 K by using Auger electron spectroscopy, X-ray photoelectron spectroscopy, and low energy electron diffraction. The adsorption of N sub 2 O on clean NiAl(110) at 300 K leads only to selective oxidation of the surface aluminium without any apparent surface reconstructions. Stepwise annealing of the heavily oxygen-doped samples from 600 K to 1300 K in ultra-high vacuum results firstly in the onset of randomly oriented oxide surface then finally fairly well-ordered Al sub 2 O sub 3 films. The much wider energy separation between the core (or Auger transition) levels of metallic Al sup 0 and oxidic Al sup 3 sup + states for thicker oxide films is believed to be due to a lower degree of extra-relaxation by metallic electrons and, therefore, would imply better quality for oxide films with similar thicknesses.

  1. Characteristics of ion spectrum in a low energy nitrogen operated plasma focus: application to the metallic substrates thermal treatment

    International Nuclear Information System (INIS)

    Full text: This work presents the nitrogen ion spectrum characteristics in a Plasma Focus device, determined using a Thomson spectrometer and a Faraday cup, operated in the secondary electron collective mode. It is also discussed the thermal treatment and the re coating induce by ions incident on a metallic surface (AISI 304 steel) placed in front of the coaxial gun, when the device is operated with a Ti implant at the end of the central electrode

  2. Enhanced off-resonance magnetoelectric response in laser annealed PZT thick film grown on magnetostrictive amorphous metal substrate

    International Nuclear Information System (INIS)

    A highly dense, 4 μm-thick Pb(Zr,Ti)O3 (PZT) film is deposited on amorphous magnetostrictive Metglas foil (FeBSi) by granule spray in vacuum process at room temperature, followed by its localized annealing with a continuous-wave 560 nm ytterbium fiber laser radiation. This longer-wavelength laser radiation is able to anneal the whole of thick PZT film layer without any deteriorative effects, such as chemical reaction and/or atomic diffusion, at the interface and crystallization of amorphous Metglas substrate. Greatly enhanced dielectric and ferroelectric properties of the annealed PZT are attributed to its better crystallinity and grain growth induced by laser irradiation. As a result, a colossal off-resonance magnetoelectric (ME) voltage coefficient that is two orders of magnitude larger than previously reported output from PZT/Metglas film-composites is achieved. The present work addresses the problems involved in the fabrication of PZT/Metglas film-composites and opens up emerging possibilities in employing piezoelectric materials with low thermal budget substrates (suitable for integrated electronics) and designing laminate composites for ME based devices

  3. Enhanced off-resonance magnetoelectric response in laser annealed PZT thick film grown on magnetostrictive amorphous metal substrate

    Energy Technology Data Exchange (ETDEWEB)

    Palneedi, Haribabu [Materials Interface Laboratory, Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 305-701 (Korea, Republic of); Functional Ceramics Group, Korea Institute of Materials Science (KIMS), Changwon 641-831 (Korea, Republic of); Maurya, Deepam; Priya, Shashank [Bio-inspired Materials and Devices Laboratory (BMDL), Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States); Kim, Gi-Yeop; Choi, Si-Young, E-mail: youngchoi@kims.re.kr [Materials Modeling and Characterization Department, Korea Institute of Materials Science (KIMS), Changwon 641-831 (Korea, Republic of); Kang, Suk-Joong L. [Materials Interface Laboratory, Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 305-701 (Korea, Republic of); Kim, Kwang-Ho [School of Materials Science and Engineering, Pusan National University, Busan 609-735 (Korea, Republic of); Ryu, Jungho, E-mail: jhryu@kims.re.kr [Functional Ceramics Group, Korea Institute of Materials Science (KIMS), Changwon 641-831 (Korea, Republic of)

    2015-07-06

    A highly dense, 4 μm-thick Pb(Zr,Ti)O{sub 3} (PZT) film is deposited on amorphous magnetostrictive Metglas foil (FeBSi) by granule spray in vacuum process at room temperature, followed by its localized annealing with a continuous-wave 560 nm ytterbium fiber laser radiation. This longer-wavelength laser radiation is able to anneal the whole of thick PZT film layer without any deteriorative effects, such as chemical reaction and/or atomic diffusion, at the interface and crystallization of amorphous Metglas substrate. Greatly enhanced dielectric and ferroelectric properties of the annealed PZT are attributed to its better crystallinity and grain growth induced by laser irradiation. As a result, a colossal off-resonance magnetoelectric (ME) voltage coefficient that is two orders of magnitude larger than previously reported output from PZT/Metglas film-composites is achieved. The present work addresses the problems involved in the fabrication of PZT/Metglas film-composites and opens up emerging possibilities in employing piezoelectric materials with low thermal budget substrates (suitable for integrated electronics) and designing laminate composites for ME based devices.

  4. Enhanced off-resonance magnetoelectric response in laser annealed PZT thick film grown on magnetostrictive amorphous metal substrate

    Science.gov (United States)

    Palneedi, Haribabu; Maurya, Deepam; Kim, Gi-Yeop; Priya, Shashank; Kang, Suk-Joong L.; Kim, Kwang-Ho; Choi, Si-Young; Ryu, Jungho

    2015-07-01

    A highly dense, 4 μm-thick Pb(Zr,Ti)O3 (PZT) film is deposited on amorphous magnetostrictive Metglas foil (FeBSi) by granule spray in vacuum process at room temperature, followed by its localized annealing with a continuous-wave 560 nm ytterbium fiber laser radiation. This longer-wavelength laser radiation is able to anneal the whole of thick PZT film layer without any deteriorative effects, such as chemical reaction and/or atomic diffusion, at the interface and crystallization of amorphous Metglas substrate. Greatly enhanced dielectric and ferroelectric properties of the annealed PZT are attributed to its better crystallinity and grain growth induced by laser irradiation. As a result, a colossal off-resonance magnetoelectric (ME) voltage coefficient that is two orders of magnitude larger than previously reported output from PZT/Metglas film-composites is achieved. The present work addresses the problems involved in the fabrication of PZT/Metglas film-composites and opens up emerging possibilities in employing piezoelectric materials with low thermal budget substrates (suitable for integrated electronics) and designing laminate composites for ME based devices.

  5. Highly textured Gd2Zr2O7 films grown on textured Ni-5 at.%W substrates by solution deposition route: Growth, texture evolution, and microstructure dependency

    DEFF Research Database (Denmark)

    Yue, Zhao; Grivel, Jean-Claude; Napari, M.;

    2012-01-01

    or crystallization in the thicker films. This work not only demonstrates a route for producing textured Gd2Zr2O7 buffer layers with dense structure directly on technical substrates, but also provides some fundamental understandings related to chemical solution derived films grown on metallic substrates.......Growth, texture evolution and microstructure dependency of solution derived Gd2Zr2O7 films deposited on textured Ni-5 at.%W substrates have been extensively studied. Influence of processing parameters, in particular annealing temperature and dwell time, as well as thickness effect on film texture...

  6. Heuristics for the Buffer Allocation Problem with Collision Probability Using Computer Simulation

    Directory of Open Access Journals (Sweden)

    Eishi Chiba

    2015-01-01

    Full Text Available The standard manufacturing system for Flat Panel Displays (FPDs consists of a number of pieces of equipment in series. Each piece of equipment usually has a number of buffers to prevent collision between glass substrates. However, in reality, very few of these buffers seem to be used. This means that redundant buffers exist. In order to reduce cost and space necessary for manufacturing, the number of buffers should be minimized with consideration of possible collisions. In this paper, we focus on an in-line system in which each piece of equipment can have any number of buffers. In this in-line system, we present a computer simulation method for the computation of the probability of a collision occurring. Based on this method, we try to find a buffer allocation that achieves the smallest total number of buffers under an arbitrarily specified collision probability. We also implement our proposed method and present some computational results.

  7. Variation of power generation at different buffer types and conductivities in single chamber microbial fuel cells

    KAUST Repository

    Nam, Joo-Youn

    2010-01-15

    Microbial fuel cells (MFCs) are operated with solutions containing various chemical species required for the growth of electrochemically active microorganisms including nutrients and vitamins, substrates, and chemical buffers. Many different buffers are used in laboratory media, but the effects of these buffers and their inherent electrolyte conductivities have not been examined relative to current generation in MFCs. We investigated the effect of several common buffers (phosphate, MES, HEPES, and PIPES) on power production in single chambered MFCs compared to a non-buffered control. At the same concentrations the buffers produced different solution conductivities which resulted in different ohmic resistances and power densities. Increasing the solution conductivities to the same values using NaCl produced comparable power densities for all buffers. Very large increases in conductivity resulted in a rapid voltage drop at high current densities. Our results suggest that solution conductivity at a specific pH for each buffer is more important in MFC studies than the buffer itself given relatively constant pH conditions. Based on our analysis of internal resistance and a set neutral pH, phosphate and PIPES are the most useful buffers of those examined here because pH was maintained close to the pKa of the buffer, maximizing the ability of the buffer to contribute to increase current generation at high power densities. © 2009 Elsevier B.V. All rights reserved.

  8. Buffering capacity: its relevance in soil and water pollution

    Energy Technology Data Exchange (ETDEWEB)

    Stigliani, W.M. [University of Northern Iowa, Cedar Falls (United States)

    1996-02-01

    Buffering capacities in soils are essential for neutralizing or immobilizing inputs of acids and heavy metals. There are four major buffering regimes, each of which operates in a defined pH range. When the rate of pollutant inputs exceeds the rate of natural replenishment of the buffer in a specific regime, the supply of buffer will be exhausted over time, and the soil may switch to a regime at lower pH. As the pH of the soil declines, so does its capacity to immobilize heavy metals. If the soil initially has a moderately high buffering capacity, the time scale before exhaustion is on the order of decades to a century. Over this time there may be no observable environmental effects. When the effects do become obvious, it may be too late to reverse the damage. The importance of buffering capacity as a valued environmental resource must be recognized, and its preservation must be a major component of long-term soil protection policies. (Author). 17 refs., 6 figs., 1 tab.

  9. Deposition of Metal-Organic Frameworks by Liquid-Phase Epitaxy: The Influence of Substrate Functional Group Density on Film Orientation

    Directory of Open Access Journals (Sweden)

    Christof Wöll

    2012-09-01

    Full Text Available The liquid phase epitaxy (LPE of the metal-organic framework (MOF HKUST-1 has been studied for three different COOH-terminated templating organic surfaces prepared by the adsorption of self-assembled monolayers (SAMs on gold substrates. Three different SAMs were used, mercaptohexadecanoic acid (MHDA, 4’-carboxyterphenyl-4-methanethiol (TPMTA and 9-carboxy-10-(mercaptomethyltriptycene (CMMT. The XRD data demonstrate that highly oriented HKUST-1 SURMOFs with an orientation along the (100 direction was obtained on MHDA-SAMs. In the case of the TPMTA-SAM, the quality of the deposited SURMOF films was found to be substantially inferior. Surprisingly, for the CMMT-SAMs, a different growth direction was obtained; XRD data reveal the deposition of highly oriented HKUST-1 SURMOFs grown along the (111 direction.

  10. Deposition of metal-organic frameworks by liquid-phase epitaxy: The influence of substrate functional group density on film orientation

    KAUST Repository

    Liu, J.

    2012-09-05

    The liquid phase epitaxy (LPE) of the metal-organic framework (MOF) HKUST-1 has been studied for three different COOH-terminated templating organic surfaces prepared by the adsorption of self-assembled monolayers (SAMs) on gold substrates. Three different SAMs were used, mercaptohexadecanoic acid (MHDA), 4\\'-carboxyterphenyl-4-methanethiol (TPMTA) and 9-carboxy-10-(mercaptomethyl)triptycene (CMMT). The XRD data demonstrate that highly oriented HKUST-1 SURMOFs with an orientation along the (100) direction was obtained on MHDA-SAMs. In the case of the TPMTA-SAM, the quality of the deposited SURMOF films was found to be substantially inferior. Surprisingly, for the CMMT-SAMs, a different growth direction was obtained; XRD data reveal the deposition of highly oriented HKUST-1 SURMOFs grown along the (111) direction.

  11. The pH-sensitive Pd nanoparticles as ink for ink-jet printing technology and electroless Cu metallic patterns on indium-doped tin oxide substrate

    Energy Technology Data Exchange (ETDEWEB)

    Tseng, Chun-Chieh; Lin, Yi [Medical Device Section, Medical Devices and Opto-Electronics Equipment Department, Metal Industries Research and Development Centre, Kaohsiung 802, Taiwan (China); Liu, Tsai-Yun [Department of Mechanical Engineering and Graduate Institute of Mechanical and Precision Engineering, National Kaohsiung University of Applied Sciences, Kaohsiung 807, Taiwan (China); Nian, Yan-Yu [Graduate School of Defense Science, Chung Cheng Institute of Technology, National Defense University, 335 Taiwan (China); Wang, Min-Wen, E-mail: mwwang@cc.kuas.edu.tw [Department of Mechanical Engineering and Graduate Institute of Mechanical and Precision Engineering, National Kaohsiung University of Applied Sciences, Kaohsiung 807, Taiwan (China); Ger, Ming-Der, E-mail: mingderger@gmail.com [Department of Chemical and Materials Engineering, Chung Cheng Institute of Technology, National Defense University, 335 Taiwan (China)

    2013-06-01

    In this work, a method to fabricate copper pattern on an indium-doped tin oxide (ITO) glass substrate is described. This method involves ink-jet printing of a pH-sensitive chitosan-g-polyvinyl acetate/Pd nanoparticle (CTS-g-PVAc-Pd) based ink on an untreated ITO plate to create the catalytic sites, onto which copper is subsequently deposited by an electroless plating method. To prepare the CTS-g-PVAc-Pd nanoparticles, a pH-sensitive chitosan-g-polyvinyl acetate (CTS-g-PVAc) copolymer is utilized to self-reduce Pd nanoparticles. The pH-sensitive CTS chains function as stabilizing agent for noble metal nanoparticles in acidic ink solution. On the other hand, CTS-g-PVAc copolymers convert to hydrophilic CTS-g-poly(vinyl alcohol) via alkali hydrolysis during the electroless copper plating. Therefore, the copper film with dramatically enhanced adhesion is formed on the surface of ITO glass without special pretreatment step before electroless deposition of copper film. Our results show that this process yields copper line with width down to 60 μm and ITO plated with the copper coating has good electrical conductivity, with an electrical resistivity of about 5.4 μΩ cm. - Highlights: • Chitosan-g-polyvinyl acetate copolymer provides reducing environment for Pd nanoparticles. • pH-sensitive Pd nanoparticles as ink for ink-jet printing. • Patterning Pd catalyst for the electroless deposition of copper patterns. • Method to fabricate copper patterns on In-doped tin oxide substrates. • Ink-jet printing can be directly and easily applied to fabricate metal patterns.

  12. The effect of Cr buffer layer thickness on voltage generation of thin-film thermoelectric modules

    International Nuclear Information System (INIS)

    The effect of Cr buffer layer thickness on the open-circuit voltage generated by thin-film thermoelectric modules of Bi0.5Sb1.5Te3 (p-type) and Bi2Te2.7Se0.3 (n-type) materials was investigated. A Cr buffer layer, whose thickness generally needs to be optimized to improve adhesion depending on the substrate surface condition, such as roughness, was deposited between thermoelectric thin films and glass substrates. When the Cr buffer layer was 1 nm thick, the Seebeck coefficients and electrical conductivity of 1 µm thermoelectric thin films with the buffer layers were approximately equal to those of the thermoelectric films without the buffer layers. When the thickness of the Cr buffer layer was 1 µm, the same as the thermoelectric films, the Seebeck coefficients of the bilayer films were reduced by an electrical current flowing inside the Cr buffer layer and the generation of Cr2Te3. The open-circuit voltage of the thin-film thermoelectric modules decreased with an increase in the thickness of the Cr buffer layer, which was primarily induced by the electrical current flow. The reduction caused by the Cr2Te3 generation was less than 10% of the total voltage generation of the modules without the Cr buffer layers. The voltage generation of thin-film thermoelectric modules could be controlled by the Cr buffer layer thickness. (paper)

  13. Electrodialysis operation with buffer solution

    Science.gov (United States)

    Hryn, John N.; Daniels, Edward J.; Krumdick, Greg K.

    2009-12-15

    A new method for improving the efficiency of electrodialysis (ED) cells and stacks, in particular those used in chemical synthesis. The process entails adding a buffer solution to the stack for subsequent depletion in the stack during electrolysis. The buffer solution is regenerated continuously after depletion. This buffer process serves to control the hydrogen ion or hydroxide ion concentration so as to protect the active sites of electrodialysis membranes. The process enables electrodialysis processing options for products that are sensitive to pH changes.

  14. The role of the substrate on the dispersion in accumulation in III-V compound semiconductor based metal-oxide-semiconductor gate stacks

    International Nuclear Information System (INIS)

    Dispersion in accumulation is a widely observed phenomenon in metal-oxide-semiconductor gate stacks based on III-V compound semiconductors. The physical origin of this phenomenon is attributed to border traps located in the dielectric material adjacent to the semiconductor. Here, we study the role of the semiconductor substrate on the electrical quality of the first layers at atomic layer deposited (ALD) dielectrics. For this purpose, either Al2O3 or HfO2 dielectrics with variable thicknesses were deposited simultaneously on two technology important semiconductors—InGaAs and InP. Significantly larger dispersion was observed in InP based gate stacks compared to those based on InGaAs. The observed difference is attributed to a higher border trap density in dielectrics deposited on InP compared to those deposited on InGaAs. We therefore conclude that the substrate plays an important role in the determination of the electrical quality of the first dielectric monolayers deposited by ALD. An additional observation is that larger dispersion was obtained in HfO2 based capacitors compared to Al2O3 based capacitors, deposited on the same semiconductor. This phenomenon is attributed to the lower conduction band offset rather than to a higher border trap density

  15. The role of the substrate on the dispersion in accumulation in III-V compound semiconductor based metal-oxide-semiconductor gate stacks

    Energy Technology Data Exchange (ETDEWEB)

    Krylov, Igor, E-mail: krylov@tx.technion.ac.il [The Russell Berrie Nanotechnology Institute, Technion – Israel Institute of Technology, Haifa 32000 (Israel); Ritter, Dan [The Russell Berrie Nanotechnology Institute, Technion – Israel Institute of Technology, Haifa 32000 (Israel); Department of Electrical Engineering, Technion – Israel Institute of Technology, Haifa 32000 (Israel); Eizenberg, Moshe [The Russell Berrie Nanotechnology Institute, Technion – Israel Institute of Technology, Haifa 32000 (Israel); Department of Materials Science and Engineering, Technion – Israel Institute of Technology, Haifa 32000 (Israel)

    2015-09-07

    Dispersion in accumulation is a widely observed phenomenon in metal-oxide-semiconductor gate stacks based on III-V compound semiconductors. The physical origin of this phenomenon is attributed to border traps located in the dielectric material adjacent to the semiconductor. Here, we study the role of the semiconductor substrate on the electrical quality of the first layers at atomic layer deposited (ALD) dielectrics. For this purpose, either Al{sub 2}O{sub 3} or HfO{sub 2} dielectrics with variable thicknesses were deposited simultaneously on two technology important semiconductors—InGaAs and InP. Significantly larger dispersion was observed in InP based gate stacks compared to those based on InGaAs. The observed difference is attributed to a higher border trap density in dielectrics deposited on InP compared to those deposited on InGaAs. We therefore conclude that the substrate plays an important role in the determination of the electrical quality of the first dielectric monolayers deposited by ALD. An additional observation is that larger dispersion was obtained in HfO{sub 2} based capacitors compared to Al{sub 2}O{sub 3} based capacitors, deposited on the same semiconductor. This phenomenon is attributed to the lower conduction band offset rather than to a higher border trap density.

  16. Effect of cyclic outer and inner bending on the fatigue behavior of a multi-layer metal film on a polymer substrate

    Science.gov (United States)

    Kim, Byoung-Joon; Shin, Hae-A.-Seul; Lee, Ji-Hoon; Joo, Young-Chang

    2016-06-01

    The electrical reliability of a multi-layer metal film on a polymer substrate during cyclic inner bending and outer bending is investigated using a bending fatigue system. The electrical resistance of a Cu film on a polymer substrate during cyclic outer bending increases due to fatigue damage formation, such as cracks and extrusion. Cyclic inner bending also leads to fatigue damage and a similar increase in the electrical resistance. In a sample having a NiCr under-layer, however, the electrical resistance increases significantly during outer bending but not during inner bending mode. Cross-sectional observations reveal that brittle cracking in the hard under-layer results in different fatigue behaviors according to the stress mode. By applying an Al over-layer, the fatigue resistance is improved during both outer bending and inner bending by suppressing fatigue damage formation. The effects of the position, materials, and thickness of the inter-layer on the electrical reliability of a multi-layer sample are also investigated. This study can provide meaningful information for designing a multi-layer structure under various mechanical deformations including tensile and compressive stress.

  17. Optical and Structural Properties of Microcrystalline GaN on an Amorphous Substrate Prepared by a Combination of Molecular Beam Epitaxy and Metal-Organic Chemical Vapor Deposition

    Energy Technology Data Exchange (ETDEWEB)

    Min, Jung-Wook; Hwang, Hyeong-Yong; Kang, Eun-Kyu; Park, Kwangwook; Kim, Ci-Hyun; Lee, Dong-Seon; Jho, Young-Dahl; Bae, Si-Young; Lee, Yong-Tak

    2016-05-01

    Microscale platelet-shaped GaN grains were grown on amorphous substrates by a combined epitaxial growth method of molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD). First, MBE GaN was grown on an amorphous substrate as a pre-orienting layer and its structural properties were investigated. Second, MOCVD grown GaN samples using the different growth techniques of planar and selective area growth (SAG) were comparatively investigated by transmission electron microscopy (TEM), cathodoluminescence (CL), and photoluminescence (PL). In MOCVD planar GaN, strong bound exciton peaks dominated despite the high density of the threading dislocations (TDs). In MOCVD SAG GaN, on the other hand, TDs were clearly reduced with bending, but basal stacking fault (BSF) PL peaks were observed at 3.42 eV. The combined epitaxial method not only provides a deep understanding of the growth behavior but also suggests an alternative approach for the growth of GaN on amorphous substances.

  18. SU-8-Induced Strong Bonding of Polymer Ligands to Flexible Substrates via in Situ Cross-Linked Reaction for Improved Surface Metallization and Fast Fabrication of High-Quality Flexible Circuits.

    Science.gov (United States)

    Hu, Mingjun; Guo, Qiuquan; Zhang, Tengyuan; Zhou, Shaolin; Yang, Jun

    2016-02-01

    On account of in situ cross-linked reaction of epoxy SU-8 with poly(4-vinylpyridine) (P4VP) and its strong reactive bonding ability with different pretreated substrates, we developed a simple universal one-step solution-based coating method for fast surface modification of various objects. Through this method, a layer of P4VP molecules with controllable thickness can be tethered tightly onto substrates with the assistance of SU-8. P4VP molecules possess a lot of pyridine ligands to immobilize transitional metal ions that can behave as the catalyst of electroless copper plating for surface metallization while functioning as the adhesion-promoting layer between the substrate and deposited metal. Attributed to interpenetrated entanglement of P4VP molecules and as-deposited metal, ultrathick (>7 μm) strongly adhesive high-quality copper layer can be formed on flexible substrates without any delamination. Then through laser printer to print toner mask, a variety of designed circuits can be easily fabricated on modified flexible PET substrate. PMID:26844943

  19. Evaluation of methods for application of epitaxial layers of superconductor and buffer layers

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1997-06-01

    The recent achievements in a number of laboratories of critical currents in excess of 1.0x10{sup 6} amp/cm{sup 2} at 77K in YBCO deposited over suitably textured buffer/substrate composites have stimulated interest in the potential applications of coated conductors at high temperatures and high magnetic fields. As of today, two different approaches for obtaining the textured substrates have been identified. These are: Los Alamos National Laboratory`s (LANL) ion-beam assisted deposition called IBAD, to obtain a highly textured yttria-stabilized zirconia (YSZ) buffer on nickel alloy strips, and Oak Ridge National Laboratory`s (ORNL) rolling assisted, bi-axial texturized substrate option called RABiTS. Similarly, based on the published literature, the available options to form High Temperature Superconductor (HTS) films on metallic, semi-metallic or ceramic substrates can be divided into: physical methods, and non-physical or chemical methods. Under these two major groups, the schemes being proposed consist of: - Sputtering - Electron-Beam Evaporation - Flash Evaporation - Molecular Beam Epitaxy - Laser Ablation - Electrophoresis - Chemical Vapor Deposition (Including Metal-Organic Chemical Vapor Deposition) - Sol-Gel - Metal-Organic Decomposition - Electrodeposition, and - Aerosol/Spray Pyrolysis. In general, a spool- to-spool or reel-to-reel type of continuous manufacturing scheme developed out of any of the above techniques, would consist of: - Preparation of Substrate Material - Preparation and Application of the Buffer Layer(s) - Preparation and Application of the HTS Material and Required Post-Annealing, and - Preparation and Application of the External Protective Layer. These operations would be affected by various process parameters which can be classified into: Chemistry and Material Related Parameters; and Engineering and Environmental Based Parameters. Thus, one can see that for successful development of the coated conductors manufacturing process, an

  20. Evaluation of methods for application of epitaxial buffer and superconductor layers

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1999-03-30

    The recent achievements of critical currents exceeding million amperes per square centimeter at 77K in YBCO deposited over suitably textured substrate have stimulated interest in the potential applications of coated conductors at high temperatures and in high magnetic fields. Currently, ion-beam assisted deposition (IBAD), and rolling assisted bi-axially textured substrate (RABiTS), represent two available options for obtaining textured substrates. For applying suitable coatings of buffer and high temperature superconductor (HTS) material over textured substrates, several options are available which include sputtering, electron-beam evaporation, laser ablation, electrophoresis, chemical vapor deposition (including metal organics chemical vapor deposition), sol-gel, metal organics decomposition, electrodeposition and aerosol/spray pyrolysis. A commercial continuous long-length wire/tape manufacturing scheme developed out of any suitable combination of the above techniques would consist of operations involving preparation of the substrate and application of buffer, HTS and passivation/insulation materials and special treatment steps such as post-annealing. These operations can be effected by various process parameters that can be classified into chemistry, materials, engineering and environmental related parameters. Under the DOE-sponsored program, to carry out an engineering evaluation, first, the process flow schemes were developed for various candidate options identifying the major operating steps, process conditions, and process streams. Next, to evaluate quantifiable parameters such as process severity (e.g. temperature and pressure), coating thickness and deposition rate for HTS material, achieved maximum J{sub c} value (for films >1{micro}m thick) and cost of chemical and material utilization efficiency, the multi-attribute method was used to determine attributes/merits for various parameters and candidate options. To determine similar attribute values for the

  1. Effect of Reverse Substrate Bias on Degradation of Ultra-Thin Gate-Oxide n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors under Different Stress Modes

    Institute of Scientific and Technical Information of China (English)

    ZHAO Yao; XU Ming-Zhen; TAN Chang-Hua

    2005-01-01

    @@ Degradation of ultra-thin gate-oxide n-channel metal-oxide-semiconductor field-effect transistors with the halo structure has been studied under different stress modes with a reverse substrate bias. The device degradation under the same stress mode with different reverse substrate voltages has been characterized by monitoring the substrate current in a stressing process, which follows a simple power law. When the gate voltage is less than the critical value, the device degradation will first decrease and then increase with the increasing reverse sub strate voltage, otherwise, the device degradation will increase continuously. The critical value can be obtained by measuring the substrate current variation with the increases of reverse substrate voltage and gate voltage. The experimental results indicate that the stress mode with enhanced injection efficiency and smaller device degradation can be obtained when the gate voltage is less than the critical value with a proper reverse substratevoltage chosen.

  2. Influence of Substrate on Crystal Orientation of Large-Grained Si Thin Films Formed by Metal-Induced Crystallization

    Directory of Open Access Journals (Sweden)

    Kaoru Toko

    2015-01-01

    Full Text Available Producing large-grained polycrystalline Si (poly-Si film on glass substrates coated with conducting layers is essential for fabricating Si thin-film solar cells with high efficiency and low cost. We investigated how the choice of conducting underlayer affected the poly-Si layer formed on it by low-temperature (500°C Al-induced crystallization (AIC. The crystal orientation of the resulting poly-Si layer strongly depended on the underlayer material: (100 was preferred for Al-doped-ZnO (AZO and indium-tin-oxide (ITO; (111 was preferred for TiN. This result suggests Si heterogeneously nucleated on the underlayer. The average grain size of the poly-Si layer reached nearly 20 µm for the AZO and ITO samples and no less than 60 µm for the TiN sample. Thus, properly electing the underlayer material is essential in AIC and allows large-grained Si films to be formed at low temperatures with a set crystal orientation. These highly oriented Si layers with large grains appear promising for use as seed layers for Si light-absorption layers as well as for advanced functional materials.

  3. Explanation of threshold voltage scaling in enhancement-mode InAlN/AlN-GaN metal oxide semiconductor high electron mobility transistors on Si substrates

    Energy Technology Data Exchange (ETDEWEB)

    Alexewicz, A., E-mail: alexander.alexewicz@tuwien.ac.at [Vienna University of Technology, Floragasse 7, 1040 Vienna (Austria); Ostermaier, C.; Henkel, C.; Bethge, O. [Vienna University of Technology, Floragasse 7, 1040 Vienna (Austria); Carlin, J.-F.; Lugani, L.; Grandjean, N. [Ecole Polytechnique Federale de Lausanne, Station 3, 1015 Lausanne (Switzerland); Bertagnolli, E.; Pogany, D.; Strasser, G. [Vienna University of Technology, Floragasse 7, 1040 Vienna (Austria)

    2012-07-31

    We present enhancement-mode GaN high electron mobility transistors on Si substrates with ZrO{sub 2} gate dielectrics of thicknesses t{sub ox} between 10 and 24 nm. The oxide interlayers between the InAlN/AlN barrier and gate metal allow raising the device threshold voltage up to + 2.3 V and reduce gate leakage current to less than 100 nA/mm with a high drain current on/off ratio of 4 orders of magnitude. We use a model that explains the observed linear dependence of the threshold voltage on t{sub ox} and allows determining fixed charges at the oxide/barrier interface. - Highlights: Black-Right-Pointing-Pointer Enhancement-mode InAlN/AlN-GaN high electron mobility transistor (HEMT) Black-Right-Pointing-Pointer Metal oxide semiconductor HEMT with ZrO{sub 2} gate oxide Black-Right-Pointing-Pointer Linear decrease of threshold voltage with increasing gate oxide thickness Black-Right-Pointing-Pointer A model explaining that dependence is presented. Black-Right-Pointing-Pointer This model allows determining fixed charges at the InAlN/ZrO{sub 2} interface.

  4. Metal-assisted exfoliation (MAE): green process for transferring graphene to flexible substrates and templating of sub-nanometer plasmonic gaps (Presentation Recording)

    Science.gov (United States)

    Zaretski, Aliaksandr V.; Marin, Brandon C.; Moetazedi, Herad; Dill, Tyler J.; Jibril, Liban; Kong, Casey; Tao, Andrea R.; Lipomi, Darren J.

    2015-09-01

    This paper describes a new technique, termed "metal-assisted exfoliation," for the scalable transfer of graphene from catalytic copper foils to flexible polymeric supports. The process is amenable to roll-to-roll manufacturing, and the copper substrate can be recycled. We then demonstrate the use of single-layer graphene as a template for the formation of sub-nanometer plasmonic gaps using a scalable fabrication process called "nanoskiving." These gaps are formed between parallel gold nanowires in a process that first produces three-layer thin films with the architecture gold/single-layer graphene/gold, and then sections the composite films with an ultramicrotome. The structures produced can be treated as two gold nanowires separated along their entire lengths by an atomically thin graphene nanoribbon. Oxygen plasma etches the sandwiched graphene to a finite depth; this action produces a sub-nanometer gap near the top surface of the junction between the wires that is capable of supporting highly confined optical fields. The confinement of light is confirmed by surface-enhanced Raman spectroscopy measurements, which indicate that the enhancement of the electric field arises from the junction between the gold nanowires. These experiments demonstrate nanoskiving as a unique and easy-to-implement fabrication technique that is capable of forming sub-nanometer plasmonic gaps between parallel metallic nanostructures over long, macroscopic distances. These structures could be valuable for fundamental investigations as well as applications in plasmonics and molecular electronics.

  5. Low dark current and high speed ZnO metal–semiconductor–metal photodetector on SiO{sub 2}/Si substrate

    Energy Technology Data Exchange (ETDEWEB)

    Çalışkan, Deniz, E-mail: dcaliskan@fen.bilkent.edu.tr [Nanotechnology Research Center, Bilkent University, 06800 Bilkent, Ankara (Turkey); Department of Nanotechnology and Nanomedicine, Hacettepe University, 06800 Beytepe, Ankara (Turkey); Bütün, Bayram; Çakır, M. Cihan [Nanotechnology Research Center, Bilkent University, 06800 Bilkent, Ankara (Turkey); Özcan, Şadan [Department of Physics Engineering, Hacettepe University, 06800 Beytepe, Ankara (Turkey); Özbay, Ekmel [Nanotechnology Research Center, Bilkent University, 06800 Bilkent, Ankara (Turkey); Department of Electrical and Electronics Engineering and Department of Physics, Bilkent University, 06800 Bilkent, Ankara (Turkey)

    2014-10-20

    ZnO thin films are deposited by radio-frequency magnetron sputtering on thermally grown SiO{sub 2} on Si substrates. Pt/Au contacts are fabricated by standard photolithography and lift-off in order to form a metal-semiconductor-metal (MSM) photodetector. The dark current of the photodetector is measured as 1 pA at 100 V bias, corresponding to 100 pA/cm{sup 2} current density. Spectral photoresponse measurement showed the usual spectral behavior and 0.35 A/W responsivity at a 100 V bias. The rise and fall times for the photocurrent are measured as 22 ps and 8 ns, respectively, which are the lowest values to date. Scanning electron microscope image shows high aspect ratio and dense grains indicating high surface area. Low dark current density and high speed response are attributed to high number of recombination centers due to film morphology, deducing from photoluminescence measurements. These results show that as deposited ZnO thin film MSM photodetectors can be used for the applications needed for low light level detection and fast operation.

  6. Simulation of substrate erosion and sulphate assimilation by Martian low-viscosity lava flows: implications for the genesis of precious metal-rich sulphide mineralisation on Mars

    Science.gov (United States)

    Baumgartner, Raphael; Baratoux, David; Gaillard, Fabrice; Fiorentini, Marco

    2016-04-01

    On Earth, high temperature mafic to ultramafic lava flows, such as komatiites and ferropicrites of the Archean and Proterozic eons, can be hosts to Ni-Cu-PGE sulphide mineralisation. Mechanical/thermo-mechanical erosion and assimilation of sulphur-rich crustal rocks is ascribed as the principal mechanism that leads to sulphide supersaturation, batch segregation and subsequent accumulation of metal-enriched magmatic sulphides (e.g., Bekker et al., Science, 2009). In order to investigate the likelihood of the occurrence of similar sulphide mineralisation in extraterrestrial magmatic systems, we numerically modelled erosion and assimilation during the turbulent emplacement of Martian lavas, some of which display chemical and rheological analogies with terrestrial komatiites and ferropicrites, on a variety of consolidated sedimentary sulphate-rich substrates. The modelling approach relies on the integration of i) mathematical lava erosion models for turbulent flows (Williams et al., J. Geophys. Res., 1998), ii) thermodynamic volatile degassing models (Gaillard et al., Space Sci. Rev., 2013), and iii) formulations on the stability of sulphides (Fortin et al., Geochim. Cosmochim. Acta, 2015). A series of scenarios are examined in which various Martian mafic to ultramafic mantle-derived melts emplace over, and assimilate consolidated sulphate-rich substrates, such as the sedimentary lithologies (i.e., conglomerates, sandstones and mudstones) recently discovered at the Gale Crater landing site. Our modellings show that lavas emplacing over consolidated sedimentary substrate rather than stiff basaltic crust, are governed by relatively high cooling and substrate erosion rates. The rapid assimilation of sulphate, which serves as a strongly oxidising agent, could result in dramatic sulphur loss due to increased volatile degassing rates at fO2 ≳QFM-1. This effect is further enhanced with increased temperature. Nevertheless, sulphide supersaturation in the way of sulphate

  7. Ridge InGaAs/InP multi-quantum-well selective growth in nanoscale trenches on Si (001) substrate

    Energy Technology Data Exchange (ETDEWEB)

    Li, S.; Zhou, X.; Li, M.; Kong, X.; Mi, J.; Wang, M.; Wang, W.; Pan, J., E-mail: jqpan@semi.ac.cn [Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083 (China)

    2016-01-11

    Metal organic chemical vapor deposition of InGaAs/InP multi-quantum-well in nanoscale V-grooved trenches on Si (001) substrate was studied using the aspect ratio trapping method. A high quality GaAs/InP buffer layer with two convex (111) B facets was selectively grown to promote the highly uniform, single-crystal ridge InP/InGaAs multi-quantum-well structure growth. Material quality was confirmed by transmission electron microscopy and room temperature micro-photoluminescence measurements. This approach shows great promise for the fabrication of photonics devices and nanolasers on Si substrate.

  8. Remediation and reclamation of soils heavily contaminated with toxic metals as a substrate for greening with ornamental plants and grasses.

    Science.gov (United States)

    Jelusic, Masa; Lestan, Domen

    2015-11-01

    Soils highly contaminated with toxic metals are currently treated as waste despite their potential inherent fertility. We applied EDTA washing technology featuring chelant and process water recovery for remediation of soil with 4037, 2527, and 26 mg kg(-1) of Pb, Zn and Cd, respectively in a pilot scale. A high EDTA dose (120 mmol kg(-1) of soil) removed 70%, 15%, and 58% of Pb, Zn, and Cd, respectively, and reduced human oral bioaccessibility of Pb below the limit of quantification and that of Zn and Cd 3.4 and 3.2 times. In a lysimeters experiment, the contaminated and remediated soils were laid into two garden beds (4×1×0.15 m) equipped with lysimeters, and subjected to cultivation of ornamental plants: Impatiens walleriana, Tagetes erecta, Pelargonium×peltatum, and Verbena×hybrida and grasses: Dactylis glomerata, Lolium multiflorum, and Festuca pratensis. Plants grown on remediated soil demonstrated the same or greater biomass yield and reduced the uptake of Pb, Zn and Cd up to 10, 2.5 and 9.5 times, respectively, compared to plants cultivated on the original soil. The results suggest that EDTA remediation produced soil suitable for greening.

  9. Remediation and reclamation of soils heavily contaminated with toxic metals as a substrate for greening with ornamental plants and grasses.

    Science.gov (United States)

    Jelusic, Masa; Lestan, Domen

    2015-11-01

    Soils highly contaminated with toxic metals are currently treated as waste despite their potential inherent fertility. We applied EDTA washing technology featuring chelant and process water recovery for remediation of soil with 4037, 2527, and 26 mg kg(-1) of Pb, Zn and Cd, respectively in a pilot scale. A high EDTA dose (120 mmol kg(-1) of soil) removed 70%, 15%, and 58% of Pb, Zn, and Cd, respectively, and reduced human oral bioaccessibility of Pb below the limit of quantification and that of Zn and Cd 3.4 and 3.2 times. In a lysimeters experiment, the contaminated and remediated soils were laid into two garden beds (4×1×0.15 m) equipped with lysimeters, and subjected to cultivation of ornamental plants: Impatiens walleriana, Tagetes erecta, Pelargonium×peltatum, and Verbena×hybrida and grasses: Dactylis glomerata, Lolium multiflorum, and Festuca pratensis. Plants grown on remediated soil demonstrated the same or greater biomass yield and reduced the uptake of Pb, Zn and Cd up to 10, 2.5 and 9.5 times, respectively, compared to plants cultivated on the original soil. The results suggest that EDTA remediation produced soil suitable for greening. PMID:25577699

  10. Nitrification in a zeoponic substrate

    Science.gov (United States)

    McGilloway, R. L.; Weaver, R. W.; Ming, D. W.; Gruener, J. E.

    2003-01-01

    Clinoptilolite is a zeolite mineral with high cation exchange capacity used in zeoponic substrates that have been proposed as a solid medium for growing plants or as a fertilizer material. The kinetics of nitrification has not been measured for NH4+ saturated zeoponic substrate. Experiments were conducted to evaluate the production of NO2- and NO3-, and nitrifier populations in zeoponic substrates. Small columns were filled with zeoponic substrate inoculated with a commercial inoculum or soil enrichment culture of nitrifying bacteria. In addition to column studies, a growth chamber study was conducted to evaluate the kinetics of nitrification in zeoponic substrates used to grow radishes (Raphanus sativus L.). The zeoponic substrate provided a readily available source of NH4+, and nitrifying bacteria were active in the substrate. Ammonium oxidation rates in column studies ranged from 5 to 10 micrograms N g-1 substrate h-1, and NO2- oxidation rates were 2 to 9.5 micrograms N g-1 substrate h-1. Rates determined from the growth chamber study were approximately 1.2 micrograms N g-1 substrate h-1. Quantities of NH4+ oxidized to NO2- and NO3- in inoculated zeoponic substrate were in excess of plant up-take. Acidification as a result of NH4+ oxidation resulted in a pH decline, and the zeoponic substrate showed limited buffering capacity.

  11. Buffer Gas Acquisition and Storage

    Science.gov (United States)

    Parrish, Clyde F.; Lueck, Dale E.; Jennings, Paul A.; Callahan, Richard A.; Delgado, H. (Technical Monitor)

    2001-01-01

    The acquisition and storage of buffer gases (primarily argon and nitrogen) from the Mars atmosphere provides a valuable resource for blanketing and pressurizing fuel tanks and as a buffer gas for breathing air for manned missions. During the acquisition of carbon dioxide (CO2), whether by sorption bed or cryo-freezer, the accompanying buffer gases build up in the carbon dioxide acquisition system, reduce the flow of CO2 to the bed, and lower system efficiency. It is this build up of buffer gases that provide a convenient source, which must be removed, for efficient capture Of CO2 Removal of this buffer gas barrier greatly improves the charging rate of the CO2 acquisition bed and, thereby, maintains the fuel production rates required for a successful mission. Consequently, the acquisition, purification, and storage of these buffer gases are important goals of ISRU plans. Purity of the buffer gases is a concern e.g., if the CO, freezer operates at 140 K, the composition of the inert gas would be approximately 21 percent CO2, 50 percent nitrogen, and 29 percent argon. Although there are several approaches that could be used, this effort focused on a hollow-fiber membrane (HFM) separation method. This study measured the permeation rates of CO2, nitrogen (ND, and argon (Ar) through a multiple-membrane system and the individual membranes from room temperature to 193K and 10 kpa to 300 kPa. Concentrations were measured with a gas chromatograph that used a thermoconductivity (TCD) detector with helium (He) as the carrier gas. The general trend as the temperature was lowered was for the membranes to become more selective, In addition, the relative permeation rates between the three gases changed with temperature. The end result was to provide design parameters that could be used to separate CO2 from N2 and Ar.

  12. Facile Formation of High-quality InGaN/GaN Quantum-disks-in-Nanowires on Bulk-Metal Substrates for High-power Light-emitters

    KAUST Repository

    Zhao, Chao

    2016-01-08

    High-quality nitride materials grown on scalable and low-cost metallic substrates are considerably attractive for high-power light emitters. We demonstrate here, for the first time, the high-power red (705 nm) InGaN/GaN quantum-disks (Qdisks)-in-nanowire light-emitting diodes (LEDs) self-assembled directly on metal-substrate. The LEDs exhibited a low turn-on voltage of ~2 V without efficiency droop up to injection current of 500 mA (1.6 kA/cm2) at ~5 V. This is achieved through the direct growth and optimization of high-quality nanowires on titanium (Ti) coated bulk polycrystalline-molybdenum (Mo) substrates. We performed extensive studies on the growth mechanisms, obtained high-crystal-quality nanowires, and confirmed the epitaxial relationship between the cubic titanium nitride (TiN) transition layer and the hexagonal nanowires. The growth of nanowires on all-metal stack of TiN/Ti/Mo enables simultaneous implementation of n-metal contact, reflector and heat-sink, which greatly simplifies the fabrication process of high-power light emitters. Our work ushers in a practical platform for high-power nanowires light emitters, providing versatile solutions for multiple cross-disciplinary applications that are greatly enhanced by leveraging on the chemical stability of nitride materials, large specific surface of nanowires, chemical lift-off ready layer structures, and reusable Mo substrates.

  13. Effects of Homo-buffer Layer on Properties of Sputter-deposited ZnO Films

    Institute of Scientific and Technical Information of China (English)

    Jian Huang; Linjun Wang; Run Xu; Weimin Shi; Yiben Xia

    2009-01-01

    Two-step growth regimes were applied to realize a homoepitaxial growth of ZnO films on freestanding diamond substrates by radio-frequency (RF) reactive magnetron sputtering method. ZnO buffer layers were deposited on freestanding diamond substrates at a low sputtering power of 50 W, and then ZnO main layers were prepared on this buffer layer at a high sputtering power of 150 W. For comparison, a sample was also deposited directly on freestanding diamond substrate at a power of 150 W. The effects of ZnO buffer layers on the structural, optical, electrical and morphological properties of the ZnO main layer were studied by X-ray diffraction (XRD), scanning electron microscopy (SEM), Raman spectroscopy, semiconductor characterization system and atomic force microscopy (AFM) respectively. The experimental results suggested that homo-buffer layer was helpful to improve the crystalline quality of ZnO/diamond heteroepitaxial films.

  14. Thermophysical tests of buffer materials

    Energy Technology Data Exchange (ETDEWEB)

    Suzuki, H. [ITC, Tokyo (Japan); Taniguchi, Wataru

    1999-03-01

    Thermodynamic properties of buffer materials were measured for putting in order thermodynamic constants to be used in the near-field thermal analysis. The thermal diffusivity and thermal conductivity were measured as functions of the water content and temperature to deduce the specific heat. The thermal conductivity and specific heat varied significantly as the water content changed. Obtained values of the specific heat agreed well the expected values calculated based on the constituents of the buffer material. Temperature dependence of the thermodynamic constants was found small below 90degC. From the findings, the thermal conductivity and specific heat of the buffer material were formulated as functions of the water content. Thermodynamic study of powdery bentonite was carried out as well with a purpose of use for filling apertures in the artificial barrier. (H. Baba)

  15. Study on Heavy Metals Contaminated Substrate Sludge Stabilized by Cement and the Leching Concentration of Solidified Body%含重金属底泥固化及浸出毒性的研究

    Institute of Scientific and Technical Information of China (English)

    陈绮洁; 张平; 吴颖娟; 刘陈敏; 彭彩红; 彭丽煌; 张咏丽

    2015-01-01

    采用水泥固化法对某冶炼厂含重金属硫化物底泥进行固化处理。主要分析了底泥中重金属含量和不同提取剂对重金属浸出量的影响,并考察在不同底泥掺量比例和不同养护龄期对重金属浸出的影响,实验表明:重金属浸出浓度随水泥掺入比例和养护时间的增加而减少,固化最佳配比为底泥掺入量60%,固化体养护期10天,固化效果良好且稳定;固化体中Pb、 Zn和Cd浸出毒性低于国家标准,但Tl的浸出仍存在显著风险。%Cement solidification technology was used to solidify heavy metals contaminated substrate sludge which comes from a Smelter. The content and the leaching concentration of heavy metals in substrate sludge were mainly analyzed. Using the cement solidification technology to stabilize the heavy metal in substrate sludge, the best parameters were determined by examining the leaching result of heavy metals under different mixed ratio of substrate sludge and curing time condition. Experiments result showed that the leaching of heavy metals concentration decreased along with the increase of cement admixture ratio and curing time, the best substrate sludge admixture ratio was 60%, and curing time was 10 days. After cement solidification, the leaching of Pb, Zn and Cd were all below national standard, while the leaching Tl concentration still had a significant risk.

  16. ACETIC ACID AND A BUFFER

    DEFF Research Database (Denmark)

    2009-01-01

    The present invention relates to a composition comprising : a) 0.01-20% wt/wt acetic acid and b) a physiologically tolerable buffer capable of maintaining acetic acid at a pH in the range of 2-7; and use of such a composition as an antimicrobial agent.......The present invention relates to a composition comprising : a) 0.01-20% wt/wt acetic acid and b) a physiologically tolerable buffer capable of maintaining acetic acid at a pH in the range of 2-7; and use of such a composition as an antimicrobial agent....

  17. Study on growth mechanisms and electronic structures of polar NiO(1 1 1) ultrathin films using iron oxide buffer layers

    International Nuclear Information System (INIS)

    Highlights: • Polar NiO(1 1 1) films were grown on FeO(1 1 1), Fe3O4(1 1 1), Fe2O3(0 0 0 1) buffer layers. • Iron oxide buffer layers reduced the lattice mismatch between NiO(1 1 1) and Mo(1 1 0). • Interfacial reaction between NiO and iron oxides decreased the interfacial energy. - Abstract: Polar surfaces of metal oxides have attracted considerable attention in fundamental science and technological applications because of their peculiar stabilization mechanisms and unusual adsorption and catalytic properties. In this study, various ordered iron oxide films, including FeO(1 1 1), Fe3O4(1 1 1) and Fe2O3(0 0 0 1), were successfully used as the buffer layers for the growth of polar NiO(1 1 1) films with several nanometer thickness. The results indicated that the iron oxide buffer layers reduced the lattice mismatch between NiO(1 1 1) and Mo(1 1 0) substrate, and also decreased the interfacial energy by means of the interfacial reaction between NiO and iron oxide surfaces, benefiting the initial nucleation and the growth of polar NiO(1 1 1) films. This study will be essential for understanding the physical and chemical properties of polar surfaces

  18. A methodical approach to modelling the mechanical stability of metallic catalytic converter substrates; Methodische Vorgehensweise zur Modellierung der mechanischen Stabilitaet von metallischen Katalysatortraegern

    Energy Technology Data Exchange (ETDEWEB)

    Guist, C. [Bayerische Motoren Werke AG (BMW), Muenchen (Germany)

    2000-02-01

    Simulation is gaining increasing significance in automotive development, thanks to the advantages it brings with regard to cutting costs and reducing development time. A characteristic feature of simulation is that the solution is devised on a virtual plane, irrespective of the technical taks. Translating the technical system onto the virtual plane, or the modelling process, is critical to the outcome. This aspect is considered using the example of the simulation of the mechanical stability of metallic catalytic converter substrates (EMITEC) in a close-coupled arrangement on a BMW six-cylinder engine. The objective is to highlight the approach used in this process, as it is also transferable to other engineering tasks. (orig.) [German] Die Simulation nimmt aufgrund der sich dadurch bietenden Vorteile hinsichtlich Kosteneinsparung und Entwicklungszeitverkuerzung an Bedeutung bei der Fahrzeugentwicklung zu. Charakteristisch fuer die Simulation ist, dass die Loesung, unabhaengig von der technischen Aufgabenstellung, in der virtuellen Ebene erfolgt. Die Uebertragung des technischen Systems in die virtuelle Ebene, das Modellieren, stellt den erfolgsbestimmenden Schritt dar. Dieser Aspekt soll am Beispiel der Simulation der mechanischen Stabilitaet von metallischen Katalysatortraegern (Emitec) bei motornaher Anordnung an einem BMW-Sechszylindermotor betrachtet werden. Das Ziel ist, die dabei angewandte Methodik, die sich auch auf andere technische Aufgaben uebertragen laesst, darzustellen. (orig.)

  19. Fabrication of 160-nm T-gate metamorphic AlInAs/GaInAs HEMTs on GaAs substrates by metal organic chemical vapour deposition

    Institute of Scientific and Technical Information of China (English)

    Li Hai-Ou; Huang Wei; Tang Chak Wah; Deng Xiao-Fang; Lau Kei May

    2011-01-01

    The fabrication and performance of 160-nm gate-length metamorphic AlInAs/GaInAs high electron mobility transistors (mHEMTs) grown on GaAs substrate by metal organic chemical vapour deposition (MOCVD) are reported.By using a novel combined optical and e-beam photolithography technology, submicron mHEMTs devices have been achieved. The devices exhibit good DC and RF performance. The maximum current density was 817 mA/mm and the maximum transconductance was 828 mS/mm. The non-alloyed Ohmic contact resistance Rc was as low as 0.02 Ω-mm. The unity current gain cut-off frequency (fT) and the maximum oscillation frequency (fmax) were 146 GHz and 189 GHz, respectively. This device has the highest fT yet reported for a 160-nm gate-length HEMTs grown by MOCVD.The output conductance is 28.9 mS/mm, which results in a large voltage gain of 28.6. Also, an input capacitance to gate-drain feedback capacitance ratio, Cgs/Cgd, of 4.3 is obtained in the device.

  20. The mechanism of the nano-CeO2 films deposition by electrochemistry method as coated conductor buffer layers

    International Nuclear Information System (INIS)

    Highlights: • Crack-free CeO2 film thicker than 200 nm was prepared on NiW substrate by ED method. • Different electrochemical processes as hydroxide/metal mechanisms were identified. • The CeO2 precursor films deposited by ED method were in nano-scales. - Abstract: Comparing with conventional physical vapor deposition methods, electrochemistry deposition technique shows a crack suppression effect by which the thickness of CeO2 films on Ni–5 at.%W substrate can reach a high value up to 200 nm without any cracks, make it a potential single buffer layer for coated conductor. In the present work, the processes of CeO2 film deposited by electrochemistry method are detailed investigated. A hydroxide reactive mechanism and an oxide reactive mechanism are distinguished for dimethyl sulfoxide and aqueous solution, respectively. Before heat treatment to achieve the required bi-axial texture performance of buffer layers, the precursor CeO2 films are identified in nanometer scales. The crack suppression for electrochemistry deposited CeO2 films is believed to be attributed to the nano-effects of the precursors

  1. The mechanism of the nano-CeO{sub 2} films deposition by electrochemistry method as coated conductor buffer layers

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Yuming; Cai, Shuang [Department of Physics, Shanghai University, Shanghai 200444 (China); Shanghai Key Laboratory of High Temperature Superconductors, Shanghai 200444 (China); Liang, Ying, E-mail: yliang@ecust.edu.cn [Institute of Nuclear Technology and Application, School of Science, East China University of Science and Technology, Shanghai 200237 (China); Bai, Chuanyi; Liu, Zhiyong; Guo, Yanqun; Cai, Chuanbing [Department of Physics, Shanghai University, Shanghai 200444 (China); Shanghai Key Laboratory of High Temperature Superconductors, Shanghai 200444 (China)

    2015-05-15

    Highlights: • Crack-free CeO{sub 2} film thicker than 200 nm was prepared on NiW substrate by ED method. • Different electrochemical processes as hydroxide/metal mechanisms were identified. • The CeO{sub 2} precursor films deposited by ED method were in nano-scales. - Abstract: Comparing with conventional physical vapor deposition methods, electrochemistry deposition technique shows a crack suppression effect by which the thickness of CeO{sub 2} films on Ni–5 at.%W substrate can reach a high value up to 200 nm without any cracks, make it a potential single buffer layer for coated conductor. In the present work, the processes of CeO{sub 2} film deposited by electrochemistry method are detailed investigated. A hydroxide reactive mechanism and an oxide reactive mechanism are distinguished for dimethyl sulfoxide and aqueous solution, respectively. Before heat treatment to achieve the required bi-axial texture performance of buffer layers, the precursor CeO{sub 2} films are identified in nanometer scales. The crack suppression for electrochemistry deposited CeO{sub 2} films is believed to be attributed to the nano-effects of the precursors.

  2. A Capital Adequacy Buffer Model

    NARCIS (Netherlands)

    D.E. Allen (David); M.J. McAleer (Michael); R.J. Powell (Robert); A.K. Singh (Abhay)

    2013-01-01

    markdownabstract__Abstract__ In this paper, we develop a new capital adequacy buffer model (CABM) which is sensitive to dynamic economic circumstances. The model, which measures additional bank capital required to compensate for fluctuating credit risk, is a novel combination of the Merton structur

  3. Buffering in cyclic gene networks

    Science.gov (United States)

    Glyzin, S. D.; Kolesov, A. Yu.; Rozov, N. Kh.

    2016-06-01

    We consider cyclic chains of unidirectionally coupled delay differential-difference equations that are mathematical models of artificial oscillating gene networks. We establish that the buffering phenomenon is realized in these system for an appropriate choice of the parameters: any given finite number of stable periodic motions of a special type, the so-called traveling waves, coexist.

  4. Direct cooled power electronics substrate

    Science.gov (United States)

    Wiles, Randy H [Powell, TN; Wereszczak, Andrew A [Oak Ridge, TN; Ayers, Curtis W [Kingston, TN; Lowe, Kirk T [Knoxville, TN

    2010-09-14

    The disclosure describes directly cooling a three-dimensional, direct metallization (DM) layer in a power electronics device. To enable sufficient cooling, coolant flow channels are formed within the ceramic substrate. The direct metallization layer (typically copper) may be bonded to the ceramic substrate, and semiconductor chips (such as IGBT and diodes) may be soldered or sintered onto the direct metallization layer to form a power electronics module. Multiple modules may be attached to cooling headers that provide in-flow and out-flow of coolant through the channels in the ceramic substrate. The modules and cooling header assembly are preferably sized to fit inside the core of a toroidal shaped capacitor.

  5. Development and application of a green-chemistry solution deposition technique for buffer layer coating on cube-textured metal substrates in view of further deposition of rare-earth based superconductors

    DEFF Research Database (Denmark)

    Pallewatta, Pallewatta G A P

    Superconductor based energy production has been thoroughly researched by many scientists all over the world, due to the advantage of zero electric resistance that will contribute to the energy saving capabilities. Recently successful developments have been reported in coated conductor architectur...

  6. Effect of Oxide Buffer Layer on the Thermochromic Properties of VO2 Thin Films

    Science.gov (United States)

    Koo, Hyun; Xu, Lu; Ko, Kyeong-Eun; Ahn, Seunghyun; Chang, Se-Hong; Park, Chan

    2013-12-01

    VO2 thin films were deposited on soda lime glass substrates with ZnO, TiO2, SnO2, and CeO2 thin films applied as buffer layers between the VO2 films and the substrates in order to investigate the effect of buffer layer on the formation and the thermochromic properties of VO2 film. Buffer layers with thicknesses over 50 nm were found to affect the formation of VO2 film, which was confirmed by XRD spectra. By using ZnO, TiO2, and SnO2 buffer layers, monoclinic VO2 (VO2(M)) film was successfully fabricated on soda lime glass at 370 °C. On the contrary, films of VO2(B), which is known to have no phase transition near room temperature, were formed rather than VO2(M) when the film was deposited on CeO2 buffer layer at the same film deposition temperature. The excellent thermochromic properties of the films deposited on ZnO, TiO2, and SnO2 buffer layers were confirmed from the temperature dependence of electrical resistivity from room temperature to 80 °C. Especially, due to the tendency of ZnO thin film to grow with a high degree of preferred orientation on soda lime glass at low temperature, the VO2 film deposited on ZnO buffer layer exhibits the best thermochromic properties compared to those on other buffer layer materials used in this study. These results suggest that deposition of VO2 films on soda lime glass at low temperature with excellent thermochromic properties can be achieved by considering the buffer layer material having structural similarity with VO2. Moreover, the degree of crystallization of buffer layer is also related with that of VO2 film, and thus ZnO can be one of the most effective buffer layer materials.

  7. Dual mode logic buffers for VLSI interconnects

    Directory of Open Access Journals (Sweden)

    A.Ilakkiya

    2015-10-01

    Full Text Available Buffer insertion is a mechanism widely used to increase the performance of VLSI digital circuits. Buffer insertion has a strong impact on reliability in terms of delay and power dissipation of synchronous systems, since the clock distribution system requires reduced or controlled clock skew, being the buffer insertion and buffer sizing becomes an important aspect. Buffer insertion has also been used to reduce the noise generation, especially in heavy loaded nets, since the inclusion of buffer helps to desynchronize signal transitions.

  8. Static Switching Dynamic Buffer Circuit

    OpenAIRE

    Pandey, A. K.; R. A. Mishra; R. K. Nagaria

    2013-01-01

    We proposed footless domino logic buffer circuit. It minimizes redundant switching at the dynamic and the output nodes. The proposed circuit avoids propagation of precharge pulse to the output node and allows the dynamic node which saves power consumption. Simulation is done using 0.18 µm CMOS technology. We have calculated the power consumption, delay, and power delay product of the proposed circuit and compared the results with the existing circuits for different logic function, loading co...

  9. Growth and Magnetic Properties of Zincblende CrSb Epilayers on Relaxed and Strained (In, Ga)As Buffers

    Institute of Scientific and Technical Information of China (English)

    DENG Jia-Jun; ZHAO Jian-Hua; BI Jing-Feng; ZHENG Yu-Hong; JIA Quan-Jie; NIU Zhi-Chuan; WU Xiao-Guang; ZHENG Hou-Zhi

    2006-01-01

    @@ Zincblende CrSb (zb-CrSb) layers with room-temperature ferromagnetism have been grown on relaxed and strained (In, Ga)As buffer layers epitaxially prepared on (001) GaAs substrates by molecular-beam epitaxy.

  10. HV/CVD Grown Relaxed SiGe Buffer Layers for SiGe HMOSFETs

    Institute of Scientific and Technical Information of China (English)

    黄文韬; 罗广礼; 史进; 邓宁; 陈培毅; 钱佩信

    2003-01-01

    High-vacuum/chemical-vapor deposition (HV/CVD) system was used to grow relaxed SiGe buffer layers on Si substrates. Several methods were then used to analyze the quality of the SiGe films. X-ray diffraction and Raman spectroscopy showed that the upper layer was almost fully relaxed. Second ion mass spectroscopy showed that the Ge compositions were step-graded. Transmission electron microscopy showed that the misfit dislocations were restrained to the graded SiGe layers. Tests of the electrical properties of tensile-strained Si on relaxed SiGe buffer layers showed that their transconductances were higher than that of Si devices. These results verify the high quality of the relaxed SiGe buffer layer. The calculated critical layer thicknesses of the graded Si1-xGex layer on Si substrate and a Si layer on the relaxed SiGe buffer layer agree well with experimental results.

  11. SERS substrate and a method of providing a SERS substrate

    DEFF Research Database (Denmark)

    2011-01-01

    Source: US2011116089A A substrate primarily for SERS determination, the substrate has a number of elongate elements with a density of at least 1x108 elongate elements per cm2 and having metal coated tips. When the elements may be made to lean toward each other, such as by providing a drop...

  12. Superconducting YBa2Cu3O7 films on Si and GaAs with conducting indium tin oxide buffer layers

    Science.gov (United States)

    James, J. H.; Kellett, B. J.; Gauzzi, A.; Dwir, B.; Pavuna, D.

    1991-03-01

    Superconducting YBa2Cu3O7-delta (YBCO) thin films have been grown in situ by ion beam sputtering on Si and GaAs substrates with intermediate, conducting Indium Tin Oxide (ITO) buffer layers. Uniform, textured YBCO films on ITO exhibit Tc onset at 92K and Tc0 at 68K and 60K on Si and GaAs substrates respectively, the latter value is the highest Tc reported on GaAs. YBCO/ITO films exhibit metallic resistivity behavior. In situ YBCO films on SrTiO3 show Tc onset = 92K and Tc0 = 90.5K, transition widths are less than 1K. A simple optical bolometer has been constructed from YBCO films on SrTiO3. Tunnelling measurements have also been carried out using the first YBCO-Pb window-type tunnel junctions.

  13. Buffer erosion in dilute groundwater

    International Nuclear Information System (INIS)

    One scenario of interest for repository safety assessment involves the loss of bentonite buffer material in contact with dilute groundwater flowing through a transmissive fracture interface. In order to examine the extrusion/erosion behavior of bentonite buffer material under such circumstances, a series of experiments were performed in a flow-through, 1 mm aperture, artificial fracture system. These experiments covered a range of solution chemistry (salt concentration and composition), material composition (sodium montmorillonite and admixtures with calcium montmorillonite), and flow velocity conditions. No erosion was observed for sodium montmorillonite against solution compositions from 0.5 g/L to 10 g/L NaCl. No erosion was observed for 50/50 calcium/sodium montmorillonite against 0.5 g/L NaCl. Erosion was observed for both sodium montmorillonite and 50/50 calcium/sodium montmorillonite against solution compositions ≤ 0.25 g/L NaCl. The calculated erosion rates for the tests with the highest levels of measured erosion, i.e., the tests run under the most dilute conditions (ionic strength (IS) < ∼1 mM), were well-correlated to flow velocity, whereas the calculated erosion rates for the tests with lower levels of measured erosion, i.e., the tests run under somewhat less dilute conditions (∼1 mM < IS < ∼4 mM), were not similarly correlated indicating that material and solution composition can significantly affect erosion rates. In every experiment, both erosive and non-erosive, emplaced buffer material extruded into the fracture and was observed to be impermeable to water flowing in the fracture effectively forming an extended diffusive barrier around the intersecting fracture/buffer interface. Additionally, a model which was developed previously to predict the rate of erosion of bentonite buffer material in low ionic strength water in rock fracture environments was applied to three different cases: sodium montmorillonite expansion in a vertical tube, a

  14. BUFFER CAPACITY IN HETEROGENEOUS MULTICOMPONENT SYSTEMS. REVIEW

    OpenAIRE

    Oxana Spinu; Igor Povar

    2015-01-01

    The quantitative basis of the theory of buffer properties for two-phase acid-base buffer systems and for multicomponent heterogeneous systems has been derived. The analytical equations with respect to all components for diverse multicomponent systems were deduced. It has been established, that the buffer capacities of components are mutually proportional.

  15. Effect of substrate bias on negative bias temperature instability of ultra-deep sub-micro p-channel metal-oxide-semiconductor field-effect transistors

    Institute of Scientific and Technical Information of China (English)

    Cao Yan-Rong; Hao Yue; Ma Xiao-Hua; Hu Shi-Gang

    2009-01-01

    The effect of substrate bias on the degradation during applying a negative bias temperature (NBT) stress is studied in this paper. With a smaller gate voltage stress applied, the degradation of negative bias temperature instability (NBTI) is enhanced, and there comes forth an inflexion point. The degradation pace turns larger when the substrate bias is higher than the inflexion point. The substrate hot holes can be injected into oxide and generate additional oxide traps, inducing an inflexion phenomenon. When a constant substrate bias stress is applied, as the gate voltage stress increases, an inflexion comes into being also. The higher gate voltage causes the electrons to tunnel into the substrate from the poly, thereby generating the electron-hole pairs by impact ionization. The holes generated by impact ionization and the holes from the substrate all can be accelerated to high energies by the substrate bias. More additional oxide traps can be produced, and correspondingly, the degradation is strengthened by the substrate bias. The results of the alternate stress experiment show that the interface traps generated by the hot holes cannot be annealed, which is different from those generated by common holes.

  16. Substrate-mediated sub-diffraction guiding of optical signals through a linear chain of metal nanoparticles : Polarization dependence and the role of the dispersion relation

    NARCIS (Netherlands)

    Compaijen, P.J.; Malyshev, V.A.; Knoester, J.

    2013-01-01

    We theoretically investigate the efficiency of transmitting optical signals through a linear chain consisting of identical and equidistantly spaced silver nanoparticles in the presence of a reflecting substrate. The energy exchange between surface plasmon polaritons of the chain and the substrate ca

  17. The stability of DLC film on nitrided CoCrMo alloy in phosphate buffer solution

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, T.F.; Liu, B.; Wu, B.J.; Liu, J.; Sun, H.; Leng, Y.X., E-mail: yxleng@263.net; Huang, N.

    2014-07-01

    CoCrMo alloy is often used as the material for metal artificial joint, but metal debris and metal ions are the main concern on tissue inflammation or tissue proliferation for metal prosthesis. In this paper, nitrogen ion implantation and diamond like carbon (DLC) film composite treatment was used to reduce the wear and ion release of biomedical CoCrMo substrate. The mechanical properties and stability of N-implanted/DLC composite layer in phosphate buffer solution (PBS) was evaluated to explore the full potential of N-implanted/DLC composite layer as an artificial joint surface modification material. The results showed that the DLC film on N implanted CoCrMo (N-implanted/DLC composite layer) had the higher surface hardness and wear resistance than the DLC film on virgin CoCrMo alloy, which was resulted from the strengthen effect of the N implanted layer on CoCrMo alloy. After 30 days immersion in PBS, the structure of DLC film on virgin CoCrMo or on N implanted CoCrMo had no visible change. But the adhesion and corrosion resistance of DLC on N implanted CoCrMo (N-implanted/DLC composite layer) was weakened due to the dissolution of the N implanted layer after 30 days immersion in PBS. The adhesion reduction of N-implanted/DLC composite layer was adverse for in vivo application in long term. So researcher should be cautious to use N implanted layer as an inter-layer for increasing CoCrMo alloy load carrying capacity in vivo environment.

  18. Buffered Communication Analysis in Distributed Multiparty Sessions

    Science.gov (United States)

    Deniélou, Pierre-Malo; Yoshida, Nobuko

    Many communication-centred systems today rely on asynchronous messaging among distributed peers to make efficient use of parallel execution and resource access. With such asynchrony, the communication buffers can happen to grow inconsiderately over time. This paper proposes a static verification methodology based on multiparty session types which can efficiently compute the upper bounds on buffer sizes. Our analysis relies on a uniform causality audit of the entire collaboration pattern - an examination that is not always possible from each end-point type. We extend this method to design algorithms that allocate communication channels in order to optimise the memory requirements of session executions. From these analyses, we propose two refinements methods which respect buffer bounds: a global protocol refinement that automatically inserts confirmation messages to guarantee stipulated buffer sizes and a local protocol refinement to optimise asynchronous messaging without buffer overflow. Finally our work is applied to overcome a buffer overflow problem of the multi-buffering algorithm.

  19. Advanced titania buffer layer architectures prepared by chemical solution deposition

    Science.gov (United States)

    Kunert, J.; Bäcker, M.; Brunkahl, O.; Wesolowski, D.; Edney, C.; Clem, P.; Thomas, N.; Liersch, A.

    2011-08-01

    Chemical solution deposition (CSD) was used to grow high-quality (100) oriented films of SrTiO3 (STO) on CSD CaTiO3 (CTO), Ba0.1Ca0.9TiO3 (BCT) and STO seed and template layers. These template films bridge the lattice misfit between STO and the nickel-tungsten (NiW) substrate, assisting in dense growth of textured STO. Additional niobium (Nb) doping of the STO buffer layer reduces oxygen diffusion which is necessary to avoid undesired oxidation of the NiW. The investigated templates offer suitable alternatives to established standard buffer systems like La2Zr2O7 (LZO) and CeO2 for coated conductors.

  20. Buffered Electrochemical Polishing of Niobium

    Energy Technology Data Exchange (ETDEWEB)

    Ciovati, Gianluigi [Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States); Tian, Hui [Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States); College of William and Mary, Williamsburg, VA (United States); Corcoran, Sean [Virginia Polytechnic Inst. and State Univ. (Virginia Tech), Blacksburg, VA (United States)

    2011-03-01

    The standard preparation of superconducting radio-frequency (SRF) cavities made of pure niobium include the removal of a 'damaged' surface layer, by buffered chemical polishing (BCP) or electropolishing (EP), after the cavities are formed. The performance of the cavities is characterized by a sharp degradation of the quality factor when the surface magnetic field exceeds about 90 mT, a phenomenon referred to as 'Q-drop.' In cavities made of polycrystalline fine grain (ASTM 5) niobium, the Q-drop can be significantly reduced by a low-temperature (? 120 °C) 'in-situ' baking of the cavity if the chemical treatment was EP rather than BCP. As part of the effort to understand this phenomenon, we investigated the effect of introducing a polarization potential during buffered chemical polishing, creating a process which is between the standard BCP and EP. While preliminary results on the application of this process to Nb cavities have been previously reported, in this contribution we focus on the characterization of this novel electrochemical process by measuring polarization curves, etching rates, surface finish, electrochemical impedance and the effects of temperature and electrolyte composition. In particular, it is shown that the anodic potential of Nb during BCP reduces the etching rate and improves the surface finish.

  1. VLSI scaling methods and low power CMOS buffer circuit

    International Nuclear Information System (INIS)

    Device scaling is an important part of the very large scale integration (VLSI) design to boost up the success path of VLSI industry, which results in denser and faster integration of the devices. As technology node moves towards the very deep submicron region, leakage current and circuit reliability become the key issues. Both are increasing with the new technology generation and affecting the performance of the overall logic circuit. The VLSI designers must keep the balance in power dissipation and the circuit's performance with scaling of the devices. In this paper, different scaling methods are studied first. These scaling methods are used to identify the effects of those scaling methods on the power dissipation and propagation delay of the CMOS buffer circuit. For mitigating the power dissipation in scaled devices, we have proposed a reliable leakage reduction low power transmission gate (LPTG) approach and tested it on complementary metal oxide semiconductor (CMOS) buffer circuit. All simulation results are taken on HSPICE tool with Berkeley predictive technology model (BPTM) BSIM4 bulk CMOS files. The LPTG CMOS buffer reduces 95.16% power dissipation with 84.20% improvement in figure of merit at 32 nm technology node. Various process, voltage and temperature variations are analyzed for proving the robustness of the proposed approach. Leakage current uncertainty decreases from 0.91 to 0.43 in the CMOS buffer circuit that causes large circuit reliability. (semiconductor integrated circuits)

  2. Offshore Substrate

    Data.gov (United States)

    California Department of Resources — This shapefile displays the distribution of substrate types from Pt. Arena to Pt. Sal in central/northern California. Originally this data consisted of seven paper...

  3. 2G HTS wires made on 30 μm thick Hastelloy substrate

    Science.gov (United States)

    Sundaram, A.; Zhang, Y.; Knoll, A. R.; Abraimov, D.; Brownsey, P.; Kasahara, M.; Carota, G. M.; Nakasaki, R.; Cameron, J. B.; Schwab, G.; Hope, L. V.; Schmidt, R. M.; Kuraseko, H.; Fukushima, T.; Hazelton, D. W.

    2016-10-01

    REBCO (RE = rare earth) based high temperature superconducting (HTS) wires are now being utilized for the development of electric and electromagnetic devices for various industrial, scientific and medical applications. In the last several years, the increasing efforts in using the so-called second generation (2G) HTS wires for some of the applications require a further increase in their engineering current density (J e). The applications are those typically related to high magnetic fields where the higher J e of a REBCO wire, in addition to its higher irreversibility fields and higher mechanical strength, is already a major advantage over other superconducting wires. An effective way to increase the J e is to decrease the total thickness of a wire, for which using a thinner substrate becomes an obvious and attractive approach. By using our IBAD-MOCVD (ion beam assisted deposition-metal organic chemical vapor deposition) technology we have successfully made 2G HTS wires using a Hastelloy® C276 substrate that is only 30 μm in thickness. By using this thinner substrate instead of the typical 50 μm thick substrate and with a same critical current (I c), the J e of a wire can be increased by 30% to 45% depending on the copper stabilizer thickness. In this paper, we report the fabrication and characterization of the 2G HTS wires made on the 30 μm thick Hastelloy® C276 substrate. It was shown that with the optimization in the processing protocol, the surface of the thinner Hastelloy® C276 substrate can be readily electropolished to the quality needed for the deposition of the buffer stack. Same in the architecture as that on the standard 50 μm thick substrate, the buffer stack made on the 30 μm thick substrate showed an in-plane texture with a Δϕ of around 6.7° in the LaMnO3 cap layer. Low-temperature in-field transport measurement results suggest that the wires on the thinner substrate had achieved equivalent superconducting performance, most importantly the I

  4. Melatonin: Buffering the Immune System

    Directory of Open Access Journals (Sweden)

    Juan M. Guerrero

    2013-04-01

    Full Text Available Melatonin modulates a wide range of physiological functions with pleiotropic effects on the immune system. Despite the large number of reports implicating melatonin as an immunomodulatory compound, it still remains unclear how melatonin regulates immunity. While some authors argue that melatonin is an immunostimulant, many studies have also described anti-inflammatory properties. The data reviewed in this paper support the idea of melatonin as an immune buffer, acting as a stimulant under basal or immunosuppressive conditions or as an anti-inflammatory compound in the presence of exacerbated immune responses, such as acute inflammation. The clinical relevance of the multiple functions of melatonin under different immune conditions, such as infection, autoimmunity, vaccination and immunosenescence, is also reviewed.

  5. The development and testing of rail-vehicle buffers filled with elastomer spring packages

    OpenAIRE

    Legat, Janko; Gubeljak, Nenad; Predan, Jožef

    2015-01-01

    The decision of the Slovenian Railway Company to modernise the shock absorbing and traction equipment of its existing rolling stock initiated the development of novel spring packages consisting of elastomer-metal-based elements. The crash testing of rail vehicles represents an important part of the testing of spring packages after their installation into buffers. The collision of a loaded rail vehicle with another loaded rail vehicle at a standstill is used to evaluate the capacity of buffers...

  6. A pH sensor based on electric properties of nanotubes on a glass substrate

    Directory of Open Access Journals (Sweden)

    Subagyo Agus

    2007-01-01

    Full Text Available AbstractWe fabricated a pH-sensitive device on a glass substrate based on properties of carbon nanotubes. Nanotubes were immobilized specifically on chemically modified areas on a substrate followed by deposition of metallic source and drain electrodes on the area. Some nanotubes connected the source and drain electrodes. A top gate electrode was fabricated on an insulating layer of silane coupling agent on the nanotube. The device showed properties of ann-type field effect transistor when a potential was applied to the nanotube from the top gate electrode. Before fabrication of the insulating layer, the device showed that thep-type field effect transistor and the current through the source and drain electrodes depend on the buffer pH. The current increases with decreasing pH of the CNT solution. This device, which can detect pH, is applicable for use as a biosensor through modification of the CNT surface.

  7. Carbon thin films deposited by the magnetron sputtering technique using cobalt, copper and nickel as buffer-layers; Filmes finos de carbono depositados por meio da tecnica de magnetron sputtering usando cobalto, cobre e niquel como buffer-layers

    Energy Technology Data Exchange (ETDEWEB)

    Costa e Silva, Danilo Lopes

    2015-11-01

    In this work, carbon thin films were produced by the magnetron sputtering technique using single crystal substrates of alumina c-plane (0001) and Si (111) and Si (100) substrates, employing Co, Ni and Cu as intermediate films (buffer-layers). The depositions were conducted in three stages, first with cobalt buffer-layers where only after the production of a large number of samples, the depositions using cooper buffer-layers were carried out on Si substrates. Then, depositions were performed with nickel buffer layers using single-crystal alumina substrates. The crystallinity of the carbon films was evaluated by using the technique of Raman spectroscopy and, then, by X-ray diffraction (XRD). The morphological characterization of the films was performed by scanning electron microscopy (SEM and FEG-SEM) and high-resolution transmission electron microscopy (HRTEM). The XRD peaks related to the carbon films were observed only in the results of the samples with cobalt and nickel buffer-layers. The Raman spectroscopy showed that the carbon films with the best degree of crystallinity were the ones produced with Si (111) substrates, for the Cu buffers, and sapphire substrates for the Ni and Co buffers, where the latter resulted in a sample with the best crystallinity of all the ones produced in this work. It was observed that the cobalt has low recovering over the alumina substrates when compared to the nickel. Sorption tests of Ce ions by the carbon films were conducted in two samples and it was observed that the sorption did not occur probably because of the low crystallinity of the carbon films in both samples. (author)

  8. WFC3 SS Science Data Buffer Test

    Science.gov (United States)

    MacKenty, John

    2012-10-01

    Part of side switch activities.The WFC3 Science Buffer RAM is checked for bit flips during SAA passages. This is followed by a Control Section {CS} self-test consisting of writing/reading a specified bit pattern from each memory location in Buffer RAM. The CS Buffer RAM self-test as well as the bit flip tests are all done with the CS in OPERATE.ID:WF03

  9. Moisture Buffering in the Indoor Environment

    OpenAIRE

    Svennberg, Kaisa

    2006-01-01

    Moisture buffering in the indoor environment is the ability, through absorption and desorption, of surface materials to attenuate the moisture variations of the indoor air. Moisture buffering plays an important role in understanding the risks for biological growth in surface materials in the indoor environment, e.g., mold growth on walls and house dust mites in beds, and thereby also have an impact on the health of the inhabitants. Apart from the health aspects, moisture buffering is also imp...

  10. Signature-based store checking buffer

    Science.gov (United States)

    Sridharan, Vilas; Gurumurthi, Sudhanva

    2015-06-02

    A system and method for optimizing redundant output verification, are provided. A hardware-based store fingerprint buffer receives multiple instances of output from multiple instances of computation. The store fingerprint buffer generates a signature from the content included in the multiple instances of output. When a barrier is reached, the store fingerprint buffer uses the signature to verify the content is error-free.

  11. All-optical buffering for DPSK packets

    Science.gov (United States)

    Liu, Guodong; Wu, Chongqing; Liu, Lanlan; Wang, Fu; Mao, Yaya; Sun, Zhenchao

    2013-12-01

    Advanced modulation formats, such as DPSK, DQPSK, QAM, have become the mainstream technologies in the optical network over 40Gb/s, the DPSK format is the fundamental of all advanced modulation formats. Optical buffers, as a key element for temporarily storing packets in order to synchronization or contention resolution in optical nodes, must be adapted to this new requirement. Different from other current buffers to store the NRZ or RZ format, an all-optical buffer of storing DPSK packets based on nonlinear polarization rotation in SOA is proposed and demonstrated. In this buffer, a section of PMF is used as fiber delay line to maintain the polarization states unchanged, the driver current of SOA is optimized, and no amplifier is required in the fiber loop. A packet delay resolution of 400ns is obtained and storage for tens rounds is demonstrated without significant signal degradation. Using proposed the new tunable DPSK demodulator, bit error rate has been measured after buffering for tens rounds for 10Gb/s data payload. Configurations for First-in First-out (FIFO) buffer or First-in Last-out (FILO) buffer are proposed based on this buffer. The buffer is easy control and suitable for integration. The terminal contention caused by different clients can be mitigated by managing packets delays in future all-optical network, such as optical packet switching network and WDM switching network.

  12. EFFECT OF MOD-YBCO PROCESS ON THE BUFFER MICROSTRUCrURE%MOD—YBCO对缓冲层组织结构的影响

    Institute of Scientific and Technical Information of China (English)

    金利华; 卢亚锋; 白利锋; 冯建情; 于泽铭; 王耀; 李成山

    2012-01-01

    采用金属有机沉积(MOD)的方法在两种缓冲层衬底上成功制备出YBCO超导层,在77K自场条件下获得超导临界电流密度达到~1MA/cm2.本文主要研究了MOD过程对缓冲层的组织结构的影响,采用X射线衍射和扫描电镜对薄膜的相组成和形貌进行了表征.结果发现,在MOD制备YBCO薄膜过程中,缓冲层会发生一定程度的界面反应和衬底氧化,对材料的超导性能产生影响.%Yt3CO films have been deposited on two kinds of buffered-substrates by metal organic deposition (MOD). The critical current densities of these YBCO films were about 1 MA/cm2 at 77 K and self field. The effect of MOD process on the buffers microstructure was discussed. The phase compositions and microstructures of these films were characterized by X-ray diffraction and scanning electron microscopy. The interfacial reaction and the substrate oxidation were observed due to the MOD process, which could lead to the decrease of the current capacity.

  13. Copper variation in Cu(In,Ga)Se2 solar cells with indium sulphide buffer layer

    International Nuclear Information System (INIS)

    In the manufacturing of Cu(In,Ga)Se2 (CIGS) thin film solar cells the application of a buffer layer on top of the absorber is essential to obtain high efficiency devices. Regarding the roll-to-roll production of CIGS cells and modules a vacuum deposition process for the buffer is preferable to the conventional cadmium sulphide buffer deposited in a chemical bath. Promising results have already been achieved for the deposition of indium sulphide buffer by different vacuum techniques. The solar device performance is very sensitive to the conditions at the absorber-buffer heterojunction. In view of optimization we investigated the influence of the Cu content in the absorber on the current-voltage characteristics. In this work the integral copper content was varied between 19 and 23 at.% in CIGS on glass substrates. An improvement of the cell performance by enhanced open circuit voltage was observed for a reduction to ~ 21 at.% when thermally evaporated indium sulphide was applied as the buffer layer. The influence of stoichiometry deviations on the transport mechanism and secondary barriers in the device was studied using detailed dark and light current-voltage analysis and admittance spectroscopy and compared to the reference CdS-buffered cells. We conclude that the composition of the absorber in the interface region affects current transport in InxSy-buffered and CdS-buffered cells in different ways hence optimal Cu content in those two types of devices is different. - Highlights: • Influence of Cu-variation in CIGS cells with InxSy buffer layer on cell performance • Enhanced efficiency by slight reduction of Cu-content to 21 at.% • Contribution of tunnelling-enhanced interface recombination for higher Cu-content

  14. New MBE buffer for micron- and quarter-micron-gateGaAs MESFETs

    Science.gov (United States)

    1988-01-01

    A new buffer layer has been developed that eliminates backgating in GaAs MESFETs and substantially reduces short-channel effects in GaAs MESFETs with 0.27-micron-long gates. The new buffer is grown by molecular beam epitaxy (MBE) at a substrate temperature of 200 C using Ga and As sub 4 beam fluxes. The buffer is crystalline, highly resistive, optically inactive, and can be overgrown with high quality GaAs. GaAs MESFETs with a gate length of 0.27 microns that incorporate the new buffer show improved dc and RF properties in comparison with a similar MESFET with a thin undoped GaAs buffer. To demonstrate the backgating performance improvement afforded by the new buffer, MESFETs were fabricated using a number of different buffer layers and structures. A schematic cross section of the MESFET structure used in this study is shown. The measured gate length, gate width, and source-drain spacing of this device are 2,98, and 5.5 microns, respectively. An ohmic contact, isolated from the MESFET by mesa etching, served as the sidegate. The MESFETs were fabricated in MBE n-GaAs layers grown on the new buffer and also in MBE n-GaAs layers grown on buffer layers of undoped GaAs, AlGaAs, and GaAs/AlGaAs superlattices. All the buffer layers were grown by MBE and are 2 microns thick. The active layer is doped to approximately 2 x 10 to the 17th/cu cm with silicon and is 0.3 microns thick.

  15. Coupled TM surface plasmon features of graphene-metal layered structure in the sub-THz frequency range

    International Nuclear Information System (INIS)

    TM surface plasmon (SP) characteristics of a four-layer structure, consisting of air as the superstrate, a monolayer of graphene, a dielectric buffer layer and metal as the substrate are analyzed at sub-THz frequencies. TM SPs in such case are represented by metal-like and graphene-like branches. For small frequencies the metal-like plasmon splits up into two branches depending on the graphene electron concentration; one of the branches goes into cutoff at the point where the branch features Brewster-type characteristics. Graphene-like plasmon modes are converted into short-range modes for small buffer thicknesses. Brewster-type SP modes can be effectively modulated in the vicinity of their cutoff thicknesses by means of the graphene electron concentration. (paper)

  16. Ultrasonic monitoring of material processing using clad buffer rod sensors

    Science.gov (United States)

    Ramos Franca, Demartonne

    Ultrasonic sensors and techniques are developed for in-line monitoring of polymer extrusion, cleanliness of molten metals and liquid flow speed at elevated temperature. Pulse-echo mode is used for the first two processes, while the through-transmission mode is applied in the third one. The ultrasonic probe consists of high performance clad buffer rods with different dimensions to thermally isolate the commercial ultrasonic transducer from materials at high temperature. The clad buffer rods are made of steel, polymer and ceramic. Steel clad buffer rods are introduced for in-line monitoring of polymer extrusion processes. Owing to its superior performance in pulse-echo mode, for the first time such a probe is installed and performs ultrasonic monitoring in the die of a co-extrusion machine and in the barrel section of a twin-screw extruder. It can reveal a variety of information relevant to process parameters, such as polymer layer thickness, interface location and adhesion quality, stability, or polymer composition change. For the ultrasonic monitoring of polymer processes, probes with acoustic impedance that matches that of the processed polymer may offer certain advantages such as quantitative viscoelastic evaluation; thus high temperature polymer clad buffer rods, in particular PEEK, are developed. It is demonstrated that this new probe exhibits unique advantages for in-line monitoring of the cure of epoxies and polymer extrusion process. Long steel clad buffer rods with a spherical focus lens machined at the probing end are proposed for cleanliness evaluation of molten metals. The potential of this focusing probe is demonstrated by means of high-resolution imaging and particles detection in molten zinc at temperatures higher than 600°C, using a single probe operated at pulse-echo mode. A contrapropagating ultrasonic flowmeter employing steel clad buffer rods is devised to operate at high temperature. It is demonstrated that these rods guide ultrasonic signals

  17. Temperature buffer test. Dismantling operation

    Energy Technology Data Exchange (ETDEWEB)

    Aakesson, Mattias [Clay Technology AB, Lund (Sweden)

    2010-12-15

    The Temperature Buffer Test (TBT) is a joint project between SKB/ANDRA and supported by ENRESA (modelling) and DBE (instrumentation), which aims at improving the understanding and to model the thermo-hydro-mechanical behavior of buffers made of swelling clay submitted to high temperatures (over 100 deg C) during the water saturation process. The test has been carried out in a KBS-3 deposition hole at Aespoe HRL. It was installed during the spring of 2003. Two heaters (3 m long, 0.6 m diameter) and two buffer arrangements have been investigated: the lower heater was surrounded by bentonite in the usual way, whereas the upper heater was surrounded by a ring of sand. The test was dismantled and sampled during a period from the end of October 2009 to the end of April 2010, and this report describes this operation. Different types of samples have been obtained during this operation. A large number of diameter 50 mm bentonite cores have been taken for analysis of water content and density. Large pieces, so-called big sectors, have been taken for hydro-mechanical and chemical characterizations. Finally, there has been an interest to obtain different types of interface samples in which bentonite were in contact with sand, iron or concrete. One goal has been to investigate the retrievability of the upper heater, given the possibility to remove the surrounding sand shield, and a retrieval test has therefore been performed. The sand in the shield was first removed with an industrial vacuum cleaner after loosening the material through mechanical means (with hammer drill and core machine). A front loader was subsequently used for applying a sufficient lifting force to release the heater from the bentonite underneath. The experiment has been documented in different aspects: measurements of the coordinate (height or radius) of different interfaces (between bentonite blocks and between bentonite and sand); verification of sensor positions and retrieval of sensors for subsequent

  18. Critical CuI buffer layer surface density for organic molecular crystal orientation change

    International Nuclear Information System (INIS)

    We have determined the critical surface density of the CuI buffer layer inserted to change the preferred orientation of copper phthalocyanine (CuPc) crystals grown on the buffer layer. X-ray reflectivity measurements were performed to obtain the density profiles of the buffer layers and out-of-plane and 2D grazing-incidence X-ray diffraction measurements were performed to determine the preferred orientations of the molecular crystals. Remarkably, it was found that the preferred orientation of the CuPc film is completely changed from edge-on (1 0 0) to face-on (1 1 −2) by a CuI buffer layer with a very low surface density, so low that a large proportion of the substrate surface is bare

  19. Significant Improvement of Organic Thin-Film Transistor Mobility Utilizing an Organic Heterojunction Buffer Layer

    Institute of Scientific and Technical Information of China (English)

    PAN Feng; QIAN Xian-Rui; HUANG Li-Zhen; WANG Hai-Bo; YAN Dong-Hang

    2011-01-01

    High-mobility vanadyl phthalocyanine (VOPc)/5,5″′-bis(4-fluorophenyl)-2,2′:5′,2″:5″,2″′-quaterthiophene (F2-P4T) thin-film transistors are demonstrated by employing a copper hexadecafluorophthalocyanine (F16 CuPc)/copper phthalocyanine (CuPc) heterojunction unit,which are fabricated at different substrate temperatures,as a buffer layer. The highest mobility of 4.08cm2/Vs is achieved using a F16CuPc/CuPc organic heterojunction buffer layer fabricated at high substrate temperature.Compared with the random small grain-like morphology of the room-temperature buffer layer,the high-temperature organic heterojunction presents a large-sized fiber-like film morphology,resulting in an enhanced conductivity.Thus the contact resistance of the transistor is significantly reduced and an obvious improvement in device mobility is obtained.

  20. Effect of buffer layer and external stress on magnetic properties of flexible FeGa films

    Science.gov (United States)

    Zhang, Xiaoshan; Zhan, Qingfeng; Dai, Guohong; Liu, Yiwei; Zuo, Zhenghu; Yang, Huali; Chen, Bin; Li, Run-Wei

    2013-05-01

    We systematically investigated the effect of a Ta buffer layer and external stress on the magnetic properties of magnetostrictive Fe81Ga19 films deposited on flexible polyethylene terephthalate (PET) substrates. The Ta buffer layers could effectively smoothen the rough surface of PET. As a result, the FeGa films grown on Ta buffer layers exhibit a weaker uniaxial magnetic anisotropy and lower coercivity, as compared to those films directly grown on PET substrates. By inward and outward bending the FeGa/Ta/PET samples, external in-plane compressive and tensile stresses were applied to the magnetic films. Due to the inverse magnetostrictive effect of FeGa, both the coercivity and squareness of hysteresis loops for FeGa/Ta films could be well tuned under various strains.