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Sample records for broad growth substrate

  1. Microbial growth and substrate utilization kinetics | Okpokwasili ...

    African Journals Online (AJOL)

    Microbial growth on and utilization of environmental contaminants as substrates have been studied by many researchers. Most times, substrate utilization results in removal of chemical contaminant, increase in microbial biomass and subsequent biodegradation of the contaminant. These are all aimed at detoxification of the ...

  2. Broad Substrate Specificity of the Loading Didomain of the Lipomycin Polyketide Synthase

    Energy Technology Data Exchange (ETDEWEB)

    Yuzawa, S; Eng, CH; Katz, L; Keasling, JD

    2013-06-04

    LipPks1, a polyketide synthase subunit of the lipomycin synthase, is believed to catalyze the polyketide chain initiation reaction using isobutyryl-CoA as a substrate, followed by an elongation reaction with methylmalonyl-CoA to start the biosynthesis of antibiotic alpha-lipomycin in Streptomyces aureofaciens Tu117. Recombinant LipPks1, containing the thioesterase domain from the 6-deoxyerythronolide B synthase, was produced in Escherichia coli, and its substrate specificity was investigated in vitro. Surprisingly, several different acyl-CoAs, including isobutyryl-CoA, were accepted as the starter substrates, while no product was observed with acetyl-CoA. These results demonstrate the broad substrate specificity of LipPks1 and may be applied to producing new antibiotics.

  3. Understanding the Broad Substrate Repertoire of Nitroreductase Based on Its Kinetic Mechanism*

    Science.gov (United States)

    Pitsawong, Warintra; Hoben, John P.; Miller, Anne-Frances

    2014-01-01

    The oxygen-insensitive nitroreductase from Enterobacter cloacae (NR) catalyzes two-electron reduction of nitroaromatics to the corresponding nitroso compounds and, subsequently, to hydroxylamine products. NR has an unusually broad substrate repertoire, which may be related to protein dynamics (flexibility) and/or a simple non-selective kinetic mechanism. To investigate the possible role of mechanism in the broad substrate repertoire of NR, the kinetics of oxidation of NR by para-nitrobenzoic acid (p-NBA) were investigated using stopped-flow techniques at 4 °C. The results revealed a hyperbolic dependence on the p-NBA concentration with a limiting rate of 1.90 ± 0.09 s−1, indicating one-step binding before the flavin oxidation step. There is no evidence for a distinct binding step in which specificity might be enforced. The reduction of p-NBA is rate-limiting in steady-state turnover (1.7 ± 0.3 s−1). The pre-steady-state reduction kinetics of NR by NADH indicate that NADH reduces the enzyme with a rate constant of 700 ± 20 s−1 and a dissociation constant of 0.51 ± 0.04 mm. Thus, we demonstrate simple transient kinetics in both the reductive and oxidative half-reactions that help to explain the broad substrate repertoire of NR. Finally, we tested the ability of NR to reduce para-hydroxylaminobenzoic acid, demonstrating that the corresponding amine does not accumulate to significant levels even under anaerobic conditions. Thus E. cloacae NR is not a good candidate for enzymatic production of aromatic amines. PMID:24706760

  4. Alloyed surfaces: New substrates for graphene growth

    Science.gov (United States)

    Tresca, C.; Verbitskiy, N. I.; Fedorov, A.; Grüneis, A.; Profeta, G.

    2017-11-01

    We report a systematic ab-initio density functional theory investigation of Ni(111) surface alloyed with elements of group IV (Si, Ge and Sn), demonstrating the possibility to use it to grow high quality graphene. Ni(111) surface represents an ideal substrate for graphene, due to its catalytic properties and perfect matching with the graphene lattice constant. However, Dirac bands of graphene growth on Ni(111) are completely destroyed due to the strong hybridization between carbon pz and Ni d orbitals. Group IV atoms, namely Si, Ge and Sn, once deposited on Ni(111) surface, form an ordered alloyed surface with √{ 3} ×√{ 3} -R30° reconstruction. We demonstrate that, at variance with the pure Ni(111) surface, alloyed surfaces effectively decouple graphene from the substrate, resulting unstrained due to the nearly perfect lattice matching and preserves linear Dirac bands without the strong hybridization with Ni d states. The proposed surfaces can be prepared before graphene growth without resorting on post-growth processes which necessarily alter the electronic and structural properties of graphene.

  5. Efficient production of l-lactic acid by an engineered Thermoanaerobacterium aotearoense with broad substrate specificity

    Science.gov (United States)

    2013-01-01

    Background Efficient conversion of lignocellulosic biomass to optically pure lactic acid is a key challenge for the economical production of biodegradable poly-lactic acid. A recently isolated strain, Thermoanaerobacterium aotearoense SCUT27, is promising as an efficient lactic acid production bacterium from biomass due to its broad substrate specificity. Additionally, its strictly anaerobic and thermophilic characteristics suppress contamination from other microoragnisms. Herein, we report the significant improvements of concentration and yield in lactic acid production from various lignocellulosic derived sugars, achieved by the carbon flux redirection through homologous recombination in T. aotearoense SCUT27. Results T. aotearoense SCUT27 was engineered to block the acetic acid formation pathway to improve the lactic acid production. The genetic manipulation resulted in 1.8 and 2.1 fold increase of the lactic acid yield using 10 g/L of glucose or 10 g/L of xylose as substrate, respectively. The maximum l-lactic acid yield of 0.93 g/g glucose with an optical purity of 99.3% was obtained by the engineered strain, designated as LA1002, from 50 g/L of substrate, which is very close to the theoretical value (1.0 g/g of glucose). In particular, LA1002 produced lactic acid at an unprecedented concentration up to 3.20 g/L using 10 g/L xylan as the single substrate without any pretreatment after 48 h fermentation. The non-sterilized fermentative production of l-lactic acid was also carried out, achieving values of 44.89 g/L and 0.89 g/g mixed sugar for lactic acid concentration and yield, respectively. Conclusions Blocking acetic acid formation pathway in T. aotearoense SCUT27 increased l-lactic acid production and yield dramatically. To our best knowledge, this is the best performance of fermentation on lactic acid production using xylan as the sole carbon source, considering the final concentration, yield and fermentation time. In addition, it should be

  6. Broad substrate tolerance of tubulin tyrosine ligase enables one-step site-specific enzymatic protein labeling.

    Science.gov (United States)

    Schumacher, Dominik; Lemke, Oliver; Helma, Jonas; Gerszonowicz, Lena; Waller, Verena; Stoschek, Tina; Durkin, Patrick M; Budisa, Nediljko; Leonhardt, Heinrich; Keller, Bettina G; Hackenberger, Christian P R

    2017-05-01

    The broad substrate tolerance of tubulin tyrosine ligase is the basic rationale behind its wide applicability for chemoenzymatic protein functionalization. In this context, we report that the wild-type enzyme enables ligation of various unnatural amino acids that are substantially bigger than and structurally unrelated to the natural substrate, tyrosine, without the need for extensive protein engineering. This unusual substrate flexibility is due to the fact that the enzyme's catalytic pocket forms an extended cavity during ligation, as confirmed by docking experiments and all-atom molecular dynamics simulations. This feature enabled one-step C-terminal biotinylation and fluorescent coumarin labeling of various functional proteins as demonstrated with ubiquitin, an antigen binding nanobody, and the apoptosis marker Annexin V. Its broad substrate tolerance establishes tubulin tyrosine ligase as a powerful tool for in vitro enzyme-mediated protein modification with single functional amino acids in a specific structural context.

  7. Tree growth and climate in the Pacific Northwest, North America: a broad-scale analysis of changing growth environments

    Science.gov (United States)

    Whitney L. Albright; David L. Peterson

    2013-01-01

    Climate change in the 21st century will affect tree growth in the Pacific Northwest region of North America, although complex climate–growth relationships make it difficult to identify how radial growth will respond across different species distributions. We used a novel method to examine potential growth responses to climate change at a broad geographical scale with a...

  8. Effects of mixed substrates on growth and vitamin production by ...

    African Journals Online (AJOL)

    SERVER

    2007-10-16

    Oct 16, 2007 ... The cells were grown mixotrophically in glucose (G), ethanol ... Key words: mixed substrate culture, Euglena gracilis, cell growth, vitamin production. ..... Biological elimination of nitric oxide from fuel gas by marine micro-.

  9. Molecular Cloning and Characterization of a Broad Substrate Terpenoid Oxidoreductase from Artemisia annua

    NARCIS (Netherlands)

    Ryden, Anna-Margareta; Ruyter-Spira, Carolien; Litjens, Ralph; Takahashi, Shunji; Quax, Wim; Osada, Hiroyuki; Bouwmeester, Harro; Kayser, Oliver

    From Artemisia annua L., a new oxidoreductase (Red 1) was cloned, sequenced and functionally characterized. Through bioinformatics, heterologous protein expression and enzyme substrate conversion assays, the elucidation of the enzymatic capacities of Red1 was achieved. Red1 acts on monoterpenoids,

  10. Molecular cloning and characterization of a broad substrate terpenoid oxidoreductase from Artemisia annua.

    NARCIS (Netherlands)

    Ryden, A.M.; Ruyter-Spira, C.P.; Litjens, R.; Takahashi, S.; Quax, W.J.; Osada, H.; Bouwmeester, H.J.; Kayser, O.

    2010-01-01

    From Artemisia annua L., a new oxidoreductase (Red 1) was cloned, sequenced and functionally characterized. Through bioinformatics, heterologous protein expression, and enzyme substrate conversion assays, the elucidation of the enzymatic capacities of Red1 was achieved. Red1 acts on monoterpenoids,

  11. Catalyst–substrate interaction and growth delay in vapor–liquid–solid nanowire growth

    Science.gov (United States)

    Kolíbal, Miroslav; Pejchal, Tomáš; Musálek, Tomáš; Šikola, Tomáš

    2018-05-01

    Understanding of the initial stage of nanowire growth on a bulk substrate is crucial for the rational design of nanowire building blocks in future electronic and optoelectronic devices. Here, we provide in situ scanning electron microscopy and Auger microscopy analysis of the initial stage of Au-catalyzed Ge nanowire growth on different substrates. Real-time microscopy imaging and elementally resolved spectroscopy clearly show that the catalyst dissolves the underlying substrate if held above a certain temperature. If the substrate dissolution is blocked (or in the case of heteroepitaxy) the catalyst needs to be filled with nanowire material from the external supply, which significantly increases the initial growth delay. The experiments presented here reveal the important role of the substrate in metal-catalyzed nanowire growth and pave the way for different growth delay mitigation strategies.

  12. Acclimatization and growth of ornamental pineapple seedlings under organic substrates

    Directory of Open Access Journals (Sweden)

    Ronan Carlos Colombo

    2017-09-01

    Full Text Available The in vitro propagation techniques are commonly used to produce ornamental pineapple seedlings in commercial scale, aiming to attend the growers with genetic and sanitary quality seedlings. However, the choice of the ideal substrate is essential for the acclimatization and growth stage of the seedlings propagated by this technique, since some substrates can increase the seedling mortality and/or limit the seedling growth due to its physical and chemical characteristics. Thus, the aim of this study was to evaluate the acclimatization of ornamental pineapple [Ananas comosus (L. Merr. var. ananassoides (Baker Coppens & Leal] on different substrates. Seedlings with approximately seven centimeters, obtained from in vitro culture, were transplanted into styrofoam trays filled with the following substrates: sphagnum; semi-composed pine bark; carbonized rice husk; sphagnum + semicomposed pine bark; sphagnum + carbonized rice husk; and semi-composed pine bark + carbonized rice husk. Each treatment was replicated five times using 10 plants. At 180 days, there were evaluated the following variables: survival percentage, plant height, number of leaves, leaf area, largest root length, and shoot and root dry matter. The substrate semi-composed pine bark + carbonized rice husk presented the lowest mean (62% for survival percentage. The semi-composed pine bark and semi-composed pine bark + carbonized rice husk treatments presented significant increments in some evaluated biometric characteristics. The semi-composed pine bark is the most favorable substrate for the A. comosus var. ananassoids acclimatization.

  13. Epitaxial growth mechanisms of graphene and effects of substrates

    OpenAIRE

    Özçelik, V. Ongun; Cahangirov, S.; Ciraci, S.

    2012-01-01

    The growth process of single layer graphene with and without substrate is investigated using ab initio, finite temperature molecular dynamic calculations within density functional theory. An understanding of the epitaxial graphene growth mechanisms in the atomic level is provided by exploring the transient stages which occur at the growing edges of graphene. These stages are formation and collapse of large carbon rings together with the formation and healing of Stone-Wales like pentagon-hepta...

  14. Mechanistic basis for high stereoselectivity and broad substrate scope in the (salen)Co(III)-catalyzed hydrolytic kinetic resolution.

    Science.gov (United States)

    Ford, David D; Nielsen, Lars P C; Zuend, Stephan J; Musgrave, Charles B; Jacobsen, Eric N

    2013-10-16

    In the (salen)Co(III)-catalyzed hydrolytic kinetic resolution (HKR) of terminal epoxides, the rate- and stereoselectivity-determining epoxide ring-opening step occurs by a cooperative bimetallic mechanism with one Co(III) complex acting as a Lewis acid and another serving to deliver the hydroxide nucleophile. In this paper, we analyze the basis for the extraordinarily high stereoselectivity and broad substrate scope observed in the HKR. We demonstrate that the stereochemistry of each of the two (salen)Co(III) complexes in the rate-determining transition structure is important for productive catalysis: a measurable rate of hydrolysis occurs only if the absolute stereochemistry of each of these (salen)Co(III) complexes is the same. Experimental and computational studies provide strong evidence that stereochemical communication in the HKR is mediated by the stepped conformation of the salen ligand, and not the shape of the chiral diamine backbone of the ligand. A detailed computational analysis reveals that the epoxide binds the Lewis acidic Co(III) complex in a well-defined geometry imposed by stereoelectronic rather than steric effects. This insight serves as the basis of a complete stereochemical and transition structure model that sheds light on the reasons for the broad substrate generality of the HKR.

  15. Epitaxial growth mechanisms of graphene and effects of substrates

    Science.gov (United States)

    Özçelik, V. Ongun; Cahangirov, S.; Ciraci, S.

    2012-06-01

    The growth process of single layer graphene with and without substrate is investigated using ab initio, finite temperature molecular dynamic calculations within density functional theory. An understanding of the epitaxial graphene growth mechanisms in the atomic level is provided by exploring the transient stages which occur at the growing edges of graphene. These stages are formation and collapse of large carbon rings together with the formation and healing of Stone-Wales like pentagon-heptagon defects. The activation barriers for the healing of these growth induced defects on various substrates are calculated using the climbing image nudge elastic band method and compared with that of the Stone-Wales defect. It is found that the healing of pentagon-heptagon defects occurring near the edge in the course of growth is much easier than that of Stone-Wales defect. The role of the substrate in the epitaxial growth and in the healing of defects are also investigated in detail, along with the effects of using carbon dimers as the building blocks of graphene growth.

  16. Kinetic models of cell growth, substrate utilization and bio ...

    African Journals Online (AJOL)

    Bio-decolorization kinetic studies of distillery effluent in a batch culture were conducted using Aspergillus fumigatus. A simple model was proposed using the Logistic Equation for the growth, Leudeking-Piret kinetics for bio-decolorization, and also for substrate utilization. The proposed models appeared to provide a suitable ...

  17. Estimating the Broad-Sense Heritability of Early Growth of Cowpea

    OpenAIRE

    Xu, Nicole W.; Xu, Shizhong; Ehlers, Jeff

    2009-01-01

    Cowpea is an important tropical crop. It provides a large proportion of the food resource for the African human population and their livestock. The yield and quality of cowpea have been dramatically improved through traditional breeding strategies for the past few decades. However, reports of heritability estimates for early growth of cowpea are rare. We designed a simple experiment to estimate the broad-sense heritability of early growth. We randomly selected 15 cowpea varieties among a tota...

  18. Differential growth responses of soil bacterial taxa to carbon substrates of varying chemical recalcitrance

    Energy Technology Data Exchange (ETDEWEB)

    Goldfarb, K.C.; Karaoz, U.; Hanson, C.A.; Santee, C.A.; Bradford, M.A.; Treseder, K.K.; Wallenstein, M.D.; Brodie, E.L.

    2011-04-18

    Soils are immensely diverse microbial habitats with thousands of co-existing bacterial, archaeal, and fungal species. Across broad spatial scales, factors such as pH and soil moisture appear to determine the diversity and structure of soil bacterial communities. Within any one site however, bacterial taxon diversity is high and factors maintaining this diversity are poorly resolved. Candidate factors include organic substrate availability and chemical recalcitrance, and given that they appear to structure bacterial communities at the phylum level, we examine whether these factors might structure bacterial communities at finer levels of taxonomic resolution. Analyzing 16S rRNA gene composition of nucleotide analog-labeled DNA by PhyloChip microarrays, we compare relative growth rates on organic substrates of increasing chemical recalcitrance of >2,200 bacterial taxa across 43 divisions/phyla. Taxa that increase in relative abundance with labile organic substrates (i.e., glycine, sucrose) are numerous (>500), phylogenetically clustered, and occur predominantly in two phyla (Proteobacteria and Actinobacteria) including orders Actinomycetales, Enterobacteriales, Burkholderiales, Rhodocyclales, Alteromonadales, and Pseudomonadales. Taxa increasing in relative abundance with more chemically recalcitrant substrates (i.e., cellulose, lignin, or tannin-protein) are fewer (168) but more phylogenetically dispersed, occurring across eight phyla and including Clostridiales, Sphingomonadalaes, Desulfovibrionales. Just over 6% of detected taxa, including many Burkholderiales increase in relative abundance with both labile and chemically recalcitrant substrates. Estimates of median rRNA copy number per genome of responding taxa demonstrate that these patterns are broadly consistent with bacterial growth strategies. Taken together, these data suggest that changes in availability of intrinsically labile substrates may result in predictable shifts in soil bacterial composition.

  19. Influence of nutrition and various substrates on spruce seedling growth

    Directory of Open Access Journals (Sweden)

    Đukić Matilda

    2004-01-01

    Full Text Available The results of the influence of main macronutrients (N, P, and K on growth and development of spruce (Picea abies L. Karst one-year old seedlings are presented. They were grown in containers, in nursery conditions, on four different substrates. There is a good influence on biogenous element contents, height, root collar diameter, needle length and mass, root mass as well as physiological vitality of spruce seedlings. It was observed that the effect of nutrition depends also on the type of substrate.

  20. Solution growth of microcrystalline silicon on amorphous substrates

    Energy Technology Data Exchange (ETDEWEB)

    Heimburger, Robert

    2010-07-05

    This work deals with low-temperature solution growth of micro-crystalline silicon on glass. The task is motivated by the application in low-cost solar cells. As glass is an amorphous material, conventional epitaxy is not applicable. Therefore, growth is conducted in a two-step process. The first step aims at the spatial arrangement of silicon seed crystals on conductive coated glass substrates, which is realized by means of vapor-liquid-solid processing using indium as the solvent. Seed crystals are afterwards enlarged by applying a specially developed steady-state solution growth apparatus. This laboratory prototype mainly consists of a vertical stack of a silicon feeding source and the solvent (indium). The growth substrate can be dipped into the solution from the top. The system can be heated to a temperature below the softening point of the utilized glass substrate. A temperature gradient between feeding source and growth substrate promotes both, supersaturation and material transport by solvent convection. This setup offers advantages over conventional liquid phase epitaxy at low temperatures in terms of achievable layer thickness and required growth times. The need for convective solute transport to gain the desired thickness of at least 50 {mu}m is emphasized by equilibrium calculations in the binary system indium-silicon. Material transport and supersaturation conditions inside the utilized solution growth crucible are analyzed. It results that the solute can be transported from the lower feeding source to the growth substrate by applying an appropriate heating regime. These findings are interpreted by means of a hydrodynamic analysis of fluid flow and supporting FEM simulation. To ensure thermodynamic stability of all materials involved during steady-state solution growth, the ternary phase equilibrium between molybdenum, indium and silicon at 600 C was considered. Based on the obtained results, the use of molybdenum disilicide as conductive coating

  1. Growth regulators and substrates for Oncidium baueri Lindl. micropropagation

    Directory of Open Access Journals (Sweden)

    Daniele Brandstetter Rodrigues

    2016-10-01

    Full Text Available An adequate concentration of growth regulators as well as the replacement of agar by an alternative medium may be promising from practical and financial points of view to produce orchid plants by micropropagation. The objective of this work was to evaluate different concentrations of growth regulator and alternative substrates for agar replacement in culture medium for in vitro multiplication and rooting of Oncidium baueri. In the explant multiplication phase, two experimental factors were evaluated- various concentrations of 6-benzylaminopurine (BAP (0.0, 1.0, 2.0, and 3.0 mg L-1 and substrates (agar, vermiculite, and coconut fiber added to MS medium. In the rooting phase, different concentrations of indole butyric acid (IBA (0.0, 0.5, 1.0, and 1.5 mg L-1 were added to culture medium containing the same substrate. Six months after the experiments were initiated, the survival percentage, number of leaves, shoots, and roots and length of the aerial part and the major root were evaluated. The results suggested that addition of 1.0 mg L-1 BAP is necessary for the O. baueri in vitro multiplication phase, but IBA is not necessary in the rooting phase. For the substrate, vermiculite is not indicated as an agar replacement. In contrast, coconut fiber can be used in both multiplication and rooting phases of Oncidium baueri in vitro culture.

  2. Selective growth of carbon nanotube on silicon substrates

    Institute of Scientific and Technical Information of China (English)

    ZOU Xiao-ping; H. ABE; T. SHIMIZU; A. ANDO; H. TOKUMOT; ZHU Shen-ming; ZHOU Hao-shen

    2006-01-01

    The carbon nanotube (CNT) growth of iron oxide-deposited trench-patterns and the locally-ordered CNT arrays on silicon substrate were achieved by simple thermal chemical vapor deposition(STCVD) of ethanol vapor. The CNTs were uniformly synthesized with good selectivity on trench-patterned silicon substrates. This fabrication process is compatible with currently used semiconductor-processing technologies,and the carbon-nanotube fabrication process can be widely applied for the development of electronic devices using carbon-nanotube field emitters as cold cathodes and can revolutionize the area of field-emitting electronic devices. The site-selective growth of CNT from an iron oxide nanoparticle catalyst patterned were also achieved by drying-mediated self-assembly technique. The present method offers a simple and cost-effective method to grow carbon nanotubes with self-assembled patterns.

  3. Epitaxial growth of nobel metals on alumina substrates

    International Nuclear Information System (INIS)

    Al-Mohammad, A.

    2007-06-01

    The influence of the reconstructed (0001) α-Al 2 O 3 surface on the heteroepitaxial growth and adhesion properties of small metal particles (gold, silver and copper) of noncontinuous thin films has been investigated. The crystallographic structure and morphology of substrate surfaces were examined by Reflection High Energy Electron Diffraction and Atomic Force Microscopy techniques. The reconstructed surfaces are terminated by one or more Aluminum atomic layers. By means of the Transmission Electronic Microscopy, the various granulometric and lattice parameters variations are investigated during different stages of the heteroepitaxial growth of metallic thin films. We estimated the adhesion energy values for each case of metal//(0001)α-Al 2 O 3 interfaces by two methods: the maximum cluster density and the Lifshits theory of Van der Waals energy of interfaces. The results of both methods are in good agreement. Using these methods, we found interfaces Hamaker's constants values and we investigated all the heteroepitaxial growth steps.(author)

  4. EVALUATION OF THE GROWTH OF SELECTED LACTOBACILLI IN PSEUDOCEREAL SUBSTRATE

    Directory of Open Access Journals (Sweden)

    Denisa Liptáková

    2011-12-01

    Full Text Available The growth dynamics of Lactobacillus spp. in sweet water- and milk-based substrates from cooked buckwheat and amaranth flour were studied in this work. The numbers of lactobacilli were observed during fermentation in 5% CO2 atmosphere at 37 °C and storage (3 weeks at 6 °C. The earned data and estimated growth parameters showed that certain strains grew well in the milk-based gruels, even water-based amaranth gruel. This was also the case of the species under study characterized with the fastest growth. Based on the rates, only the strains of Lactobacillus rhamnosus GG and VT1 were able to grow with the values higher than 0.6 log CFU.ml-1.h-1 that can be expressed as the times to double (td lower than 0.5 h. This was found in both the amaranth and buckwheat milk-based gruels and water-based amaranth gruels but fermented only by the probiotic GG strain. The 3-week storage tests aimed on survival of the lactobacilli at 6 °C showed minimal decrease of the counts in buckwheat gruels with the average rates of -0.084 and -0.004 log CFU.ml-1.d-1 in water- and milk-based gruels, respectively. On the other hand in amaranth gruels, the numbers of lactobacilli slightly increased with the rate of 0.02 log CFU.ml-1.d-1, on average. The results of this pilot study pointed out that the selection of suitable lactic acid bacteria should be performed for optimal fermentation of pseudo-cereal substrates. The numbers of lactobacilli at the end of fermentation were not or very slightly affected by the type of substrate at 6 °C during three weeks.doi:10.5219/169

  5. GaN growth via HVPE on SiC/Si substrates: growth mechanisms

    Science.gov (United States)

    Sharofidinov, Sh Sh; Redkov, A. V.; Osipov, A. V.; Kukushkin, S. A.

    2017-11-01

    The article focuses on the study of GaN thin film growth via chloride epitaxy on SiC/Si hybrid substrate. SiC buffer layer was grown by a method of substitution of atoms, which allows one to reduce impact of mechanical stress therein on subsequent growth of III-nitride films. It is shown, that change in GaN growth conditions leads to change in its growth mechanism. Three mechanisms: epitaxial, spiral and stepwise growth are considered and mechanical stresses are estimated via Raman spectroscopy.

  6. The effect of substrate modification on microbial growth on surfaces

    International Nuclear Information System (INIS)

    Brown, Angela Ann

    1998-01-01

    The principle aim of the program was to produce a novel, non-leaching antimicrobial surface for commercial development and future use in the liquid food packaging industry. Antimicrobial surfaces which exist presently have been produced to combat the growth of prokaryotic organisms and usually function as slow release systems. A system which could inhibit eukaryotic growth without contaminating the surrounding 'environment' with the inhibitor was considered of great commercial importance. The remit of this study was concerned with creating a surface which could control the growth of eukaryotic organisms found in fruit juice with particular interest in the yeast, Saccharomyces cerevisiae. Putative antimicrobial surfaces were created by the chemical modification of the test substrate polymers; nylon and ethylvinyl alcohol (EVOH). Surfaces were chemically modified by the covalent coupling of antimicrobial agents known to be active against the yeast Saccharomyces cerevisiae as ascertained by the screening process determining the minimum inhibitory concentration (MIC) values of agents in the desired test medium. During the study it was found that a number of surfaces did appear to inhibit yeast growth in fruit juice, however on further investigation the apparent inhibitory effect was discovered to be the result of un-bound material free in the test medium. On removing the possibility of any un-bound material present on the test surface, by a series of surface washings, the inhibitory effect on yeast growth was eliminated. Of the agents tested only one appeared to have an inhibitory effect which could be attributed to a true antimicrobial surface effect, Amical 48. As there is little known about this agent in the literature, its affect on yeast growth was examined and in particular a proposal for the mode of action on yeast is discussed, providing a plausible explanation for the inhibitory effect observed when this agent is covalently immobilised onto nylon. (author)

  7. YqhD. A broad-substrate range aldehyde reductase with various applications in production of biorenewable fuels and chemicals

    Energy Technology Data Exchange (ETDEWEB)

    Jarboe, Laura R. [Iowa State Univ., Ames, IA (United States). Dept. of Chemical and Biological Engineering

    2011-01-15

    The Escherichia coli NADPH-dependent aldehyde reductase YqhD has contributed to a variety of metabolic engineering projects for production of biorenewable fuels and chemicals. As a scavenger of toxic aldehydes produced by lipid peroxidation, YqhD has reductase activity for a broad range of short-chain aldehydes, including butyraldehyde, glyceraldehyde, malondialdehyde, isobutyraldehyde, methylglyoxal, propanealdehyde, acrolein, furfural, glyoxal, 3-hydroxypropionaldehyde, glycolaldehyde, acetaldehyde, and acetol. This reductase activity has proven useful for the production of biorenewable fuels and chemicals, such as isobutanol and 1,3- and 1,2-propanediol; additional capability exists for production of 1-butanol, 1-propanol, and allyl alcohol. A drawback of this reductase activity is the diversion of valuable NADPH away from biosynthesis. This YqhD-mediated NADPH depletion provides sufficient burden to contribute to growth inhibition by furfural and 5-hydroxymethyl furfural, inhibitory contaminants of biomass hydrolysate. The structure of YqhD has been characterized, with identification of a Zn atom in the active site. Directed engineering efforts have improved utilization of 3-hydroxypropionaldehyde and NADPH. Most recently, two independent projects have demonstrated regulation of yqhD by YqhC, where YqhC appears to function as an aldehyde sensor. (orig.)

  8. Identification of secreted proteins of Aspergillus oryzae associated with growth on solid cereal substrates

    NARCIS (Netherlands)

    Biesebeke, R. te; Boussier, A.; Biezen, N. van; Hondel, C.A.M.J.J. van den; Punt, P.J.

    2006-01-01

    Filamentous growth of Aspergillus oryzae on solid cereal substrates involves secretion of substrate converting enzymes and a solid substrate specific polarised hyphal growth phenotype. To identify proteins produced under these specific conditions, the extracts of A. oryzae grown on wheat-based media

  9. Epidermal growth factor pathway substrate 15, Eps15

    DEFF Research Database (Denmark)

    Salcini, A E; Chen, H; Iannolo, G

    1999-01-01

    Eps15 was originally identified as a substrate for the kinase activity of the epidermal growth factor receptor (EGFR). Eps15 has a tripartite structure comprising a NH2-terminal portion, which contains three EH domains, a central putative coiled-coil region, and a COOH-terminal domain containing...... multiple copies of the amino acid triplet Aspartate-Proline-Phenylalanine. A pool of Eps15 is localized at clathrin coated pits where it interacts with the clathrin assembly complex AP-2 and a novel AP-2 binding protein, Epsin. Perturbation of Eps15 and Epsin function inhibits receptor-mediated endocytosis...... of EGF and transferrin, demonstrating that both proteins are components of the endocytic machinery. Since the family of EH-containing proteins is implicated in various aspects of intracellular sorting, biomolecular strategies aimed at interfering with these processes can now be envisioned...

  10. Connective tissue growth factor is a substrate of ADAM28

    International Nuclear Information System (INIS)

    Mochizuki, Satsuki; Tanaka, Rena; Shimoda, Masayuki; Onuma, Junko; Fujii, Yutaka; Jinno, Hiromitsu; Okada, Yasunori

    2010-01-01

    Research highlights: → The hyper-variable region in the cysteine-rich domain of ADAM28 binds to C-terminal domain of CTGF. → ADAM28 cleaves CTGF alone and CTGF in the CTGF/VEGF 165 complex. → CTGF digestion by ADAM28 releases biologically active VEGF 165 from the complex. → ADAM28, CTGF and VEGF 165 are commonly co-expressed by carcinoma cells in human breast carcinoma tissues. → These suggest that ADAM28 promotes VEGF 165 -induced angiogenesis in the breast carcinomas by selective CTGF digestion in the CTGF/VEGF 165 complex. -- Abstract: ADAM28, a member of the ADAM (a disintegrin and metalloproteinase) gene family, is over-expressed by carcinoma cells and the expression correlates with carcinoma cell proliferation and progression in human lung and breast carcinomas. However, information about substrates of ADAM28 is limited. We screened interacting molecules of ADAM28 in human lung cDNA library by yeast two-hybrid system and identified connective tissue growth factor (CTGF). Binding of CTGF to proADAM28 was demonstrated by yeast two-hybrid assay and protein binding assay. ADAM28 cleaved CTGF in dose- and time-dependent manners at the Ala 181 -Tyr 182 and Asp 191 -Pro 192 bonds in the hinge region of the molecule. ADAM28 selectively digested CTGF in the complex of CTGF and vascular endothelial growth factor 165 (VEGF 165 ), releasing biologically active VEGF 165 from the complex. RT-PCR and immunohistochemical analyses demonstrated that ADAM28, CTGF and VEGF are commonly co-expressed in the breast carcinoma tissues. These data provide the first evidence that CTGF is a novel substrate of ADAM28 and suggest that ADAM28 may promote VEGF 165 -induced angiogenesis in the breast carcinomas by the CTGF digestion in the CTGF/VEGF 165 complex.

  11. Temperature dependence of ordered GeSi island growth on patterned Si (001) substrates

    International Nuclear Information System (INIS)

    ZhongZhenyang; Chen Peixuan; Jiang Zuimin; Bauer, Guenther

    2008-01-01

    Statistical information on GeSi islands grown on two-dimensionally pit-patterned Si substrates at different temperatures is presented. Three growth regimes on patterned substrates are identified: (i) kinetically limited growth at low growth temperatures, (ii) ordered island growth in an intermediate temperature range, and (iii) stochastic island growth within pits at high temperatures. A qualitative model based on growth kinetics is proposed to explain these phenomena. It can serve as a guidance to realize optimum growth conditions for ordered islands on patterned substrates

  12. Simulation and theory of island growth on stepped substrates

    International Nuclear Information System (INIS)

    Pownall, C.D.

    1999-10-01

    The nucleation, growth and coalescence of islands on stepped substrates is investigated by Monte Carlo simulations and analytical theories. Substrate steps provide a preferential site for the nucleation of islands, making many of the important processes one-dimensional in nature, and are of potentially major importance in the development of low-dimensional structures as a means of growing highly ordered chains of 'quantum dots' or continuous 'quantum wires'. A model is developed in which island nucleation is entirely restricted to the step edge, islands grow in compact morphologies by monomer capture, and eventually coalesce with one another until a single continuous cluster of islands covers the entire step. A series of analytical theories is developed to describe the dynamics of the whole evolution. The initial nucleation and aggregation regimes are modeled using the traditional approach of rate equations, rooted in mean field theory, but incorporating corrections to account for correlations in the nucleation and capture processes. This approach is found to break down close to the point at which the island density saturates and a new approach is developed based upon geometric and probabilistic arguments to describe the saturation behaviour, including the characteristic dynamic scaling which is found to persist through the coalescence regime as well. A further new theory, incorporating arguments based on the geometry of Capture Zones, is presented which reproduces the dynamics of the coalescence regime. The, latter part of the. thesis considers the spatial properties of the system, in particular the spacing of the islands along the step. An expression is derived which describes the distribution of gap sizes, and this is solved using a recently-developed relaxation method. An important result is the discovery that larger critical island sizes tend to yield more evenly spaced arrays of islands. The extent of this effect is analysed by solving for critical island

  13. Carbohydrate utilization patterns for the extremely thermophilic bacterium Caldicellulosiruptor saccharolyticus reveal broad growth substrate preferences

    NARCIS (Netherlands)

    Vanfossen, A.L.; Verhaart, M.R.A.; Kengen, S.W.M.; Kelly, R.M.

    2009-01-01

    Co-utilization of hexoses and pentoses derived from lignocellulose is an attractive trait in microorganisms considered for consolidated biomass processing to biofuels. This issue was examined for the H2-producing, extremely thermophilic bacterium Caldicellulosiruptor saccharolyticus growing on

  14. Physiological minimum temperatures for root growth in seven common European broad-leaved tree species.

    Science.gov (United States)

    Schenker, Gabriela; Lenz, Armando; Körner, Christian; Hoch, Günter

    2014-03-01

    Temperature is the most important factor driving the cold edge distribution limit of temperate trees. Here, we identified the minimum temperatures for root growth in seven broad-leaved tree species, compared them with the species' natural elevational limits and identified morphological changes in roots produced near their physiological cold limit. Seedlings were exposed to a vertical soil-temperature gradient from 20 to 2 °C along the rooting zone for 18 weeks. In all species, the bulk of roots was produced at temperatures above 5 °C. However, the absolute minimum temperatures for root growth differed among species between 2.3 and 4.2 °C, with those species that reach their natural distribution limits at higher elevations also tending to have lower thermal limits for root tissue formation. In all investigated species, the roots produced at temperatures close to the thermal limit were pale, thick, unbranched and of reduced mechanical strength. Across species, the specific root length (m g(-1) root) was reduced by, on average, 60% at temperatures below 7 °C. A significant correlation of minimum temperatures for root growth with the natural high elevation limits of the investigated species indicates species-specific thermal requirements for basic physiological processes. Although these limits are not necessarily directly causative for the upper distribution limit of a species, they seem to belong to a syndrome of adaptive processes for life at low temperatures. The anatomical changes at the cold limit likely hint at the mechanisms impeding meristematic activity at low temperatures.

  15. Growth specificity of vertical ZnO nanorods on patterned seeded substrates through integrated chemical process

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, P. Suresh [Thin Film and Nanomaterials Laboratory, Department of Physics, Bharathiar University, Coimbatore 641 046 (India); Maniam, S.M. [Centre for Quantum Technologies, National University of Singapore (Singapore); Sundaramurthy, J. [Department of Chemical and Biomolecular Engineering, National University of Singapore (NUS) (Singapore); Arokiaraj, J. [3M R and D Center (Singapore); Mangalaraj, D., E-mail: dmraj800@yahoo.com [Department of Nanoscience and Technology, Bharathiar University, Coimbatore 641046 (India); Rajarathnam, D. [CERAR, University of South Australia, Mawson Lakes, SA-5095 (Australia); Srinivasan, M.P. [Department of Chemical and Biomolecular Engineering, National University of Singapore (NUS) (Singapore); Jian, L.K. [Singapore Synchrotron Light Source (SSLS), National University of Singapore (NUS) (Singapore)

    2012-03-15

    Highlights: Black-Right-Pointing-Pointer Simple integrated chemical process was adopted for specific ZnO nanorod growth. Black-Right-Pointing-Pointer Size and orientation of nanorods are well controlled by optimum reaction time and temperature. Black-Right-Pointing-Pointer Different site-selective ZnO nanorod growths are demonstrated. - Abstract: A simple and cost effective method has been employed for the random growth and oriented ZnO nanorod arrays over as-prepared and patterned seeded glass substrates by low temperature two step growth process and growth specificity by direct laser writing (DLW) process. Scanning electron microscopy (SEM) images and X-ray diffraction analysis confirm the growth of vertical ZnO nanorods with perfect (0 0 2) orientation along c-axis which is in conjunction with optimizing the parameters at different reaction times and temperatures. Transmission electron microscopy (TEM) images show the formation of vertical ZnO nanorods with diameter and length of {approx}120 nm and {approx}400 nm respectively. Photoluminescence (PL) spectroscopic studies show a narrow emission at {approx}385 nm and a broad visible emission from 450 to 600 nm. Further, site-selective ZnO nanorod growth is demonstrated for its high degree of control over size, orientation, uniformity, and periodicity on a positive photoresist ZnO seed layer by simple geometrical (line, circle and ring) patterns of 10 {mu}m and 5 {mu}m dimensions. The demonstrated control over size, orientation and periodicity of ZnO nanorods process opens up an opportunity to develop multifunctional properties which promises their potential applications in sensor, piezoelectric, and optoelectronic devices.

  16. Single crystalline metal films as substrates for graphene growth

    Energy Technology Data Exchange (ETDEWEB)

    Zeller, Patrick; Henss, Ann-Kathrin; Wintterlin, Joost [Department Chemie, Ludwig-Maximilians-Universitaet Muenchen (Germany); Weinl, Michael; Schreck, Matthias [Institut fuer Physik, Universitaet Augsburg (Germany); Speck, Florian; Ostler, Markus [Lehrstuhl fuer Technische Physik, Universitaet Erlangen-Nuernberg, Erlangen (Germany); Institut fuer Physik, Technische Universitaet Chemnitz (Germany); Seyller, Thomas [Institut fuer Physik, Technische Universitaet Chemnitz (Germany)

    2017-11-15

    Single crystalline metal films deposited on YSZ-buffered Si(111) wafers were investigated with respect to their suitability as substrates for epitaxial graphene. Graphene was grown by CVD of ethylene on Ru(0001), Ir(111), and Ni(111) films in UHV. For analysis a variety of surface science methods were used. By an initial annealing step the surface quality of the films was strongly improved. The temperature treatments of the metal films caused a pattern of slip lines, formed by thermal stress in the films, which, however, did not affect the graphene quality and even prevented wrinkle formation. Graphene was successfully grown on all three types of metal films in a quality comparable to graphene grown on bulk single crystals of the same metals. In the case of the Ni(111) films the originally obtained domain structure of rotational graphene phases could be transformed into a single domain by annealing. This healing process is based on the control of the equilibrium between graphene and dissolved carbon in the film. For the system graphene/Ni(111) the metal, after graphene growth, could be removed from underneath the epitaxial graphene layer by a pure gas phase reaction, using the reaction of CO with Ni to give gaseous Ni(CO){sub 4}. (copyright 2017 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  17. Co-gradient variation in growth rate and development time of a broadly distributed butterfly.

    Directory of Open Access Journals (Sweden)

    Madeleine Barton

    Full Text Available Widespread species often show geographic variation in thermally-sensitive traits, providing insight into how species respond to shifts in temperature through time. Such patterns may arise from phenotypic plasticity, genetic adaptation, or their interaction. In some cases, the effects of genotype and temperature may act together to reduce, or to exacerbate, phenotypic variation in fitness-related traits across varying thermal environments. We find evidence for such interactions in life-history traits of Heteronympha merope, a butterfly distributed across a broad latitudinal gradient in south-eastern Australia. We show that body size in this butterfly is negatively related to developmental temperature in the laboratory, in accordance with the temperature-size rule, but not in the field, despite very strong temperature gradients. A common garden experiment on larval thermal responses, spanning the environmental extremes of H. merope's distribution, revealed that butterflies from low latitude (warmer climate populations have relatively fast intrinsic growth and development rates compared to those from cooler climates. These synergistic effects of genotype and temperature across the landscape (co-gradient variation are likely to accentuate phenotypic variation in these traits, and this interaction must be accounted for when predicting how H. merope will respond to temperature change through time. These results highlight the importance of understanding how variation in life-history traits may arise in response to environmental change. Without this knowledge, we may fail to detect whether organisms are tracking environmental change, and if they are, whether it is by plasticity, adaptation or both.

  18. Strawberry Production in Soilless Substrate Troughs – Plant Growth

    Science.gov (United States)

    Soilless substrates made of peat moss, coconut coir, perlite, rockwool or bark are pathogen free and they have been used in strawberry production in Europe in troughs or containers. Open field strawberry production in soilless substrate is new to California growers. The objective of this study was t...

  19. Effects of bamboo substrate and supplementary feed on growth and ...

    African Journals Online (AJOL)

    application as control (C), control and substrate installation (C + S) and, control and substrate with supplementary feeding (C + S + F) were randomly allotted to six earthen ponds each with an area of 100m2. Catfish fingerlings of mean weight 27.5g + 1.25 were stocked at the rate of 80 fish per 100m2. Water temperature, pH ...

  20. Thickness-controlled direct growth of nanographene and nanographite film on non-catalytic substrates

    Science.gov (United States)

    Du, Lei; Yang, Liu; Hu, Zhiting; Zhang, Jiazhen; Huang, Chunlai; Sun, Liaoxin; Wang, Lin; Wei, Dacheng; Chen, Gang; Lu, Wei

    2018-05-01

    Metal-catalyzed chemical vapor deposition (CVD) has been broadly employed for large-scale production of high-quality graphene. However, a following transfer process to targeted substrates is needed, which is incompatible with current silicon technology. We here report a new CVD approach to form nanographene and nanographite films with accurate thickness control directly on non-catalytic substrates such as silicon dioxide and quartz at 800 °C. The growth time is as short as a few seconds. The approach includes using 9-bis(diethylamino)silylanthracene as the carbon source and an atomic layer deposition (ALD) controlling system. The structure of the formed nanographene and nanographite films were characterized using atomic force microscopy, high resolution transmission electron microscopy, Raman scattering, and x-ray photoemission spectroscopy. The nanographite film exhibits a transmittance higher than 80% at 550 nm and a sheet electrical resistance of 2000 ohms per square at room temperature. A negative temperature-dependence of the resistance of the nanographite film is also observed. Moreover, the thickness of the films can be precisely controlled via the deposition cycles using an ALD system, which promotes great application potential for optoelectronic and thermoelectronic-devices.

  1. Chemically Functionalized Carbon Nanotubes as Substrates for Neuronal Growth

    Science.gov (United States)

    Hu, Hui; Ni, Yingchun; Montana, Vedrana; Haddon, Robert C.; Parpura, Vladimir

    2009-01-01

    We report the use of chemically modified carbon nanotubes as a substrate for cultured neurons. The morphological features of neurons that directly reflect their potential capability in synaptic transmission are characterized. The chemical properties of carbon nanotubes are systematically varied by attaching different functional groups that confer known characteristics to the substrate. By manipulating the charge carried by functionalized carbon nanotubes we are able to control the outgrowth and branching pattern of neuronal processes. PMID:21394241

  2. The Post-polyketide Synthase Steps in iso-Migrastatin Biosynthesis Featuring Tailoring Enzymes with Broad Substrate Specificity

    Science.gov (United States)

    Ma, Ming; Kwong, Thomas; Lim, Si-Kyu; Ju, Jianhua; Lohman, Jeremy R.; Shen, Ben

    2013-01-01

    The iso-migrastatin (iso-MGS) biosynthetic gene cluster from Streptomyces platensis NRRL 18993 consists of 11 genes, featuring an acyltransferase (AT)-less type I polyketide synthase (PKS) and three tailoring enzymes MgsIJK. Systematic inactivation of mgsIJK in S. platensis enabled us to (i) identify two nascent products (10 and 13) of the iso-MGS AT-less type I PKS, establishing an unprecedented novel feature for AT-less type I PKSs, and (ii) account for the formation of all known post-PKS biosynthetic intermediates (10-17) generated by the three tailoring enzymes MgsIJK, which possessed significant substrate promiscuities. PMID:23394593

  3. A Fungal α-Galactosidase from Tricholoma matsutake with Broad Substrate Specificity and Good Hydrolytic Activity on Raffinose Family Oligosaccharides

    Directory of Open Access Journals (Sweden)

    Xueran Geng

    2015-07-01

    Full Text Available An acidic α-galactosidase designated as TMG was purified from the fruiting bodies The purification protocol entailed ion exchange chromatography on Q-Sepharose and of Tricholoma matsutake with 136-fold purification and a specific activity of 909 units/mg. Mono-Q and fast protein liquid chromatography on Superdex 75. TMG is a monomeric protein exhibiting a molecular mass of 47 kDa in SDS-PAGE and gel filtration. The purified enzyme was identified by LC-MS/MS and three inner amino acid sequences were obtained. The optimum pH and temperature for TMG with pNPGal as substrate were pH 4.5 and 55 °C, respectively. The α-galactosidase activity was strongly inhibited by K+, Ca2+, Cd2+, Hg2+, Ag+ and Zn2+ ions. The enzyme activity was inhibited by the chemical modification agent N-bromosuccinimide (NBS, indicating the importance of tryptophan residue(s at or near the active site. Besides hydrolyzing pNPGal, TMG also efficaciously catalyzed the degradation of natural substrates such as stachyose, raffinose, and melibiose. Thus TMG can be exploited commercially for improving the nutritional value of soy milk by degradation of indigestible oligosaccharides.

  4. A Fungal α-Galactosidase from Tricholoma matsutake with Broad Substrate Specificity and Good Hydrolytic Activity on Raffinose Family Oligosaccharides.

    Science.gov (United States)

    Geng, Xueran; Tian, Guoting; Zhao, Yongchang; Zhao, Liyan; Wang, Hexiang; Ng, Tzi Bun

    2015-07-24

    An acidic α-galactosidase designated as TMG was purified from the fruiting bodies The purification protocol entailed ion exchange chromatography on Q-Sepharose and of Tricholoma matsutake with 136-fold purification and a specific activity of 909 units/mg. Mono-Q and fast protein liquid chromatography on Superdex 75. TMG is a monomeric protein exhibiting a molecular mass of 47 kDa in SDS-PAGE and gel filtration. The purified enzyme was identified by LC-MS/MS and three inner amino acid sequences were obtained. The optimum pH and temperature for TMG with pNPGal as substrate were pH 4.5 and 55 °C, respectively. The α-galactosidase activity was strongly inhibited by K+, Ca2+, Cd2+, Hg2+, Ag+ and Zn2+ ions. The enzyme activity was inhibited by the chemical modification agent N-bromosuccinimide (NBS), indicating the importance of tryptophan residue(s) at or near the active site. Besides hydrolyzing pNPGal, TMG also efficaciously catalyzed the degradation of natural substrates such as stachyose, raffinose, and melibiose. Thus TMG can be exploited commercially for improving the nutritional value of soy milk by degradation of indigestible oligosaccharides.

  5. Metabolic substrate use and the turnover of endogenous energy reserves in broad-tailed hummingbirds (Selasphorus platycercus).

    Science.gov (United States)

    Carleton, Scott A; Bakken, Bradley Hartman; Del Rio, Carlos Martínez

    2006-07-01

    We fed broad-tailed hummingbirds (Selasphorus platycercus) diets of contrasting carbon isotope composition and measured changes in the delta(13)C of expired breath through time. By measuring the delta(13)C in the breath of fed and fasted birds we were able to quantify the fraction of metabolism fueled by assimilated sugars and endogenous energy reserves. These measurements also allowed us to estimate the fractional turnover of carbon in the hummingbirds' energy reserves. When hummingbirds were feeding, they fueled their metabolism largely ( approximately 90%) with assimilated sugars. The rate of carbon isotope incorporation into the energy reserves of hummingbirds was higher when birds were gaining as opposed to losing body mass. The average residence time of a carbon atom in the hummingbirds' energy reserves ranged from 1 to 2 days.

  6. Structural and Kinetic Properties of the Aldehyde Dehydrogenase NahF, a Broad Substrate Specificity Enzyme for Aldehyde Oxidation.

    Science.gov (United States)

    Coitinho, Juliana B; Pereira, Mozart S; Costa, Débora M A; Guimarães, Samuel L; Araújo, Simara S; Hengge, Alvan C; Brandão, Tiago A S; Nagem, Ronaldo A P

    2016-09-27

    The salicylaldehyde dehydrogenase (NahF) catalyzes the oxidation of salicylaldehyde to salicylate using NAD(+) as a cofactor, the last reaction of the upper degradation pathway of naphthalene in Pseudomonas putida G7. The naphthalene is an abundant and toxic compound in oil and has been used as a model for bioremediation studies. The steady-state kinetic parameters for oxidation of aliphatic or aromatic aldehydes catalyzed by 6xHis-NahF are presented. The 6xHis-NahF catalyzes the oxidation of aromatic aldehydes with large kcat/Km values close to 10(6) M(-1) s(-1). The active site of NahF is highly hydrophobic, and the enzyme shows higher specificity for less polar substrates than for polar substrates, e.g., acetaldehyde. The enzyme shows α/β folding with three well-defined domains: the oligomerization domain, which is responsible for the interlacement between the two monomers; the Rossmann-like fold domain, essential for nucleotide binding; and the catalytic domain. A salicylaldehyde molecule was observed in a deep pocket in the crystal structure of NahF where the catalytic C284 and E250 are present. Moreover, the residues G150, R157, W96, F99, F274, F279, and Y446 were thought to be important for catalysis and specificity for aromatic aldehydes. Understanding the molecular features responsible for NahF activity allows for comparisons with other aldehyde dehydrogenases and, together with structural information, provides the information needed for future mutational studies aimed to enhance its stability and specificity and further its use in biotechnological processes.

  7. High-yield growth of vertically aligned carbon nanotubes on a continuously moving substrate

    International Nuclear Information System (INIS)

    Guzman de Villoria, R; Hart, A J; Steiner, S A III; Wardle, B L; Figueredo, S L; Slocum, A H

    2009-01-01

    Vertically aligned carbon nanotube (CNT) arrays are grown on a moving substrate, demonstrating continuous growth of nanoscale materials with long-range order. A cold-wall chamber with an oscillating moving platform is used to locally heat a silicon growth substrate coated with an Fe/Al 2 O 3 catalyst film for CNT growth via chemical vapor deposition. The reactant gases are introduced over the substrate through a directed nozzle to attain high-yield CNT growth. Aligned multi-wall carbon nanotube arrays (or 'forests') with heights of ∼1 mm are achieved at substrate speeds up to 2.4 mm s -1 . Arrays grown on moving substrates at different velocities are studied in order to identify potential physical limitations of repeatable and fast growth on a continuous basis. No significant differences are noted between static and moving growth as characterized by scanning electron microscopy and Raman spectroscopy, although overall growth height is marginally reduced at the highest substrate velocity. CNT arrays produced on moving substrates are also found to be comparable to those produced through well-characterized batch processes consistent with a base-growth mechanism. Growth parameters required for the moving furnace are found to differ only slightly from those used in a comparable batch process; thermal uniformity appears to be the critical parameter for achieving large-area uniform array growth. If the continuous-growth technology is combined with a reaction zone isolation scheme common in other types of processing (e.g., in the manufacture of carbon fibers), large-scale dense and aligned CNT arrays may be efficiently grown and harvested for numerous applications including providing interlayers for advanced composite reinforcement and improved electrical and thermal transport.

  8. High-yield growth of vertically aligned carbon nanotubes on a continuously moving substrate.

    Science.gov (United States)

    Guzmán de Villoria, R; Figueredo, S L; Hart, A J; Steiner, S A; Slocum, A H; Wardle, B L

    2009-10-07

    Vertically aligned carbon nanotube (CNT) arrays are grown on a moving substrate, demonstrating continuous growth of nanoscale materials with long-range order. A cold-wall chamber with an oscillating moving platform is used to locally heat a silicon growth substrate coated with an Fe/Al2O3 catalyst film for CNT growth via chemical vapor deposition. The reactant gases are introduced over the substrate through a directed nozzle to attain high-yield CNT growth. Aligned multi-wall carbon nanotube arrays (or 'forests') with heights of approximately 1 mm are achieved at substrate speeds up to 2.4 mm s(-1). Arrays grown on moving substrates at different velocities are studied in order to identify potential physical limitations of repeatable and fast growth on a continuous basis. No significant differences are noted between static and moving growth as characterized by scanning electron microscopy and Raman spectroscopy, although overall growth height is marginally reduced at the highest substrate velocity. CNT arrays produced on moving substrates are also found to be comparable to those produced through well-characterized batch processes consistent with a base-growth mechanism. Growth parameters required for the moving furnace are found to differ only slightly from those used in a comparable batch process; thermal uniformity appears to be the critical parameter for achieving large-area uniform array growth. If the continuous-growth technology is combined with a reaction zone isolation scheme common in other types of processing (e.g., in the manufacture of carbon fibers), large-scale dense and aligned CNT arrays may be efficiently grown and harvested for numerous applications including providing interlayers for advanced composite reinforcement and improved electrical and thermal transport.

  9. Experimental Results and Integrated Modeling of Bacterial Growth on an Insoluble Hydrophobic Substrate (Phenanthrene)

    DEFF Research Database (Denmark)

    Adam, Iris K. U.; Rein, Arno; Miltner, Anja

    2014-01-01

    Metabolism of a low-solubility substrate is limited by dissolution and availability and can hardly be determined. We developed a numerical model for simultaneously calculating dissolution kinetics of such substrates and their metabolism and microbial growth (Monod kinetics with decay) and tested ...

  10. Growth and flowering of Helleborus argutifolius (Viviani grown in pots depending on substrate type

    Directory of Open Access Journals (Sweden)

    Monika Henschke

    2014-09-01

    Full Text Available An experiment was conducted on the effect of substrate type on growth of Corsican hellebore (Helleborus argutifolius Viviani. Plants were grown for two years in pots with substrates whose components included Klasmann highmoor peat and Hartmann highmoor peat, mineral soil, expanded clay and perlite at various volumetric ratios. Vegetative growth and flowering were observed in hellebores. It was shown that substrates exhibited a varied effect on plant growth. Corsican hellebore in a substrate with a considerable addition of mineral soil was lower, but more branched, and it did not form inflorescences. An optimal medium for growing H. argutifolius in pots was Hartmann’s de-acidified peat + mineral soil (1:1 v:v. In this medium vegetative growth of plants was extensive, flowering was early and abundant, and long peduncles were produced.

  11. Influence of substrate temperature, growth rate and TCO substrate on the properties of CSS deposited CdS thin films

    Energy Technology Data Exchange (ETDEWEB)

    Schaffner, J., E-mail: jschaffner@surface.tu-darmstadt.de; Feldmeier, E.; Swirschuk, A.; Schimper, H.-J.; Klein, A.; Jaegermann, W.

    2011-08-31

    The growth of CdS thin films by close space sublimation (CSS) has been systematically studied using an ultra-high vacuum system known as DAISY-SOL in order to understand the basic growth mechanisms and their impact on the film properties. Substrate temperature and deposition rate were varied, and the surface properties of the CdS layer were determined by photoelectron spectroscopy (XPS) without breaking the vacuum. To analyze the influence of the deposition conditions on the layer morphology and crystallographic structure, the films were further characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM). The SEM and AFM studies show a correlation between the deposition rate and the film morphology. For high deposition rates, edged grain shapes and smoother surfaces were observed than for low deposition rates. CdS films were deposited onto two different commercially available fluorine-doped tin oxide (FTO) substrates. XRD studies show that a high <200> texture of the FTO substrate prefers the CdS growth in <0001> orientation of the hexagonal crystal modification.

  12. Effects of mixed substrates on growth and vitamin production by ...

    African Journals Online (AJOL)

    The effects of mixed carbon sources on growth and production of vitamins E and A by Euglena gracilis cells were investigated in batch culture. The cells were grown mixotrophically in glucose (G), ethanol (E) and a mixture of glucose and ethanol (EG). Cell growth was measured by counting the cell number with microscope, ...

  13. Logistic growth models of China pinks, cultivated on seven substrates, as a function of degree days

    Directory of Open Access Journals (Sweden)

    Marília Milani

    Full Text Available ABSTRACT: The objective of this study was to characterize the height (H and leaf number (LN of China pinks, grown in seven substrates, as a function of degree days, using the logistic growth model. H and LN were measured from 56 plants per substrate, for 392 plants in total. Plants that were grown on substrates formed of 50% soil with 50% rice husk ash (50% S + 50% RH and 80% rice husk ash with 20% worm castings (80% RH + 20% W had the longest vegetative growth period (74d, corresponding to 1317.9ºCd. The logistic growth model, adjusted for H, showed differences in the estimation of maximum expected height (α between the substrates, with values between 10.47cm for 50% S + 50% RH and 35.75cm for Mecplant(r. When α was estimated as LN, variation was also observed between the different substrates, from approximately 30 leaves on plants growing on 50% S + 50% RH to 34 leaves on the plants growing on the substrate formed of 80% RH + 20% W. Growth of China pinks can be characterized using H or LN in the logistic growth model as a function of degree days, being the provided plants adequately fertilized. The best substrates in terms of maximum height and leaf number were 80% soil + 20% worm castings and Mecplant(r. However, users must recalibrate the model with the estimated parameters before applying it to different growing conditions.

  14. Vertical epitaxial wire-on-wire growth of Ge/Si on Si(100) substrate.

    Science.gov (United States)

    Shimizu, Tomohiro; Zhang, Zhang; Shingubara, Shoso; Senz, Stephan; Gösele, Ulrich

    2009-04-01

    Vertically aligned epitaxial Ge/Si heterostructure nanowire arrays on Si(100) substrates were prepared by a two-step chemical vapor deposition method in anodic aluminum oxide templates. n-Butylgermane vapor was employed as new safer precursor for Ge nanowire growth instead of germane. First a Si nanowire was grown by the vapor liquid solid growth mechanism using Au as catalyst and silane. The second step was the growth of Ge nanowires on top of the Si nanowires. The method presented will allow preparing epitaxially grown vertical heterostructure nanowires consisting of multiple materials on an arbitrary substrate avoiding undesired lateral growth.

  15. Kinetic models of cell growth, substrate utilization and bio ...

    African Journals Online (AJOL)

    STORAGESEVER

    2008-05-02

    May 2, 2008 ... Aspergillus fumigatus. A simple model was proposed using the Logistic Equation for the growth, ... costs and also involved in less sophisticated fermentation ... apply and they are accurately proved that the model can express ...

  16. Catalyst free growth of CNTs by CVD on nanoscale rough surfaces of silicon substrates

    Science.gov (United States)

    Damodar, D.; Sahoo, R. K.; Jacob, C.

    2013-06-01

    Catalyst free growth of carbon nanotubes (CNT) has been achieved using atmospheric pressure chemical vapor deposition (APCVD) on surface modified Si(111) substrates. The effect of the substrate surface has been observed by partially etching with KOH (potassium hydroxide) solution which is an anisotropic etchant. Scanning electron microscopy (SEM) confirmed the formation of CNTs over most of the area of the substrate where substrates were anisotropically etched. Transmission electron microscopy (TEM) was used to observe the internal structure of the CNTs. Raman spectroscopy further confirmed the formation of the carbon nanostructures and also their graphitic crystallinity.

  17. New Crystal-Growth Methods for Producing Lattice-Matched Substrates for High-Temperature Superconductors

    Energy Technology Data Exchange (ETDEWEB)

    Boatner, L.A.

    2008-06-24

    This effort addressed the technical problem of identifying and growing, on a commercial scale, suitable single-crystal substrates for the subsequent deposition of epitaxial thin films of high temperature semiconductors such as GaN/AlN. The lack of suitable lattice-matched substrate materials was one of the major problem areas in the development of semiconducting devices for use at elevated temperatures as well as practical opto-electronic devices based on Al- and GaN technology. Such lattice-matched substrates are necessary in order to reduce or eliminate high concentrations of defects and dislocations in GaN/AlN and related epitaxial thin films. This effort concentrated, in particular, on the growth of single crystals of ZnO for substrate applications and it built on previous ORNL experience in the chemical vapor transport growth of large single crystals of zinc oxide. This combined expertise in the substrate growth area was further complemented by the ability of G. Eres and his collaborators to deposit thin films of GaN on the subject substrates and the overall ORNL capability for characterizing the quality of such films. The research effort consisted of research on the growth of two candidate substrate materials in conjunction with concurrent research on the growth and characterization of GaN films, i.e. the effort combined bulk crystal growth capabilities in the area of substrate production at both ORNL and the industrial partner, Commercial Crystal Growth Laboratories (CCL), Naples, Florida, with the novel thin-film deposition techniques previously developed in the ORNL SSD.

  18. The effect of clay amendment on substrate properties and growth of woody plants

    Directory of Open Access Journals (Sweden)

    Tomáš Meisl

    2012-01-01

    Full Text Available This work deals with the effect of two clay products differing in particle size distribution on properties of growing substrate and on growth of containerized woody plants in substrates amended with these clay products. Fine and coarse clay were added to a peat substrate, each at two rates. The peat substrate without clay was used as a control. The substrates were tested in experiments with two woody ornamentals (Thuja occidentalis ’Smaragd’ and Prunus cistena. Chemical and physical properties of the substrates were measured according to European Standards before planting. Proportion of water categories differing in availability to the plants were calculated from retention curves measured on the sand box. Properties of substrates in containers with and without plants were evaluated in the same way at the end of the culture. Clay addition changed chemical and physical properties of the tested substrates in terms: available nutrients content, particle density, bulk density, total pore volume, easy available water, water buffering capacity, air capacity, and shrinkage. The effect of fine clay was much stronger. In comparison with the clear effect of clay addition on the substrate chemical and physical properties, the effect on the growth and quality of model woody plants was not so explicit.

  19. New phenomena in epitaxial growth: solid films on quasicrystalline substrates

    International Nuclear Information System (INIS)

    Fournee, V; Thiel, P A

    2005-01-01

    An overview is given of the research conducted in the field of solid film growth on quasiperiodic surfaces. An atomistic description of quasicrystalline surfaces is presented and discussed in relation to bulk structural models. The various systems for which thin film growth has been attempted so far are reviewed. Emphasis is placed on the nucleation mechanisms of the solid films, on their growth modes in relation to the nature of the deposited metals, on the possibility of intermixing or alloying at the interface and on the epitaxial relationships at the crystal-quasicrystal interfaces. We also describe situations where the deposited elements adopt a quasiperiodic structure, which opens up the possibility of extending our understanding of the relation between quasiperiodicity and the physical properties of such structurally and chemically complex solids. (topical review)

  20. Super high-power AlGaInN-based laser diodes with a single broad-area stripe emitter fabricated on a GaN substrate

    Energy Technology Data Exchange (ETDEWEB)

    Goto, Shu; Ohta, Makoto; Yabuki, Yoshifumi; Hoshina, Yukio; Hashizu, Toshihiro; Ikeda, Masao [Development Center, Sony Shiroishi Semiconductor, Inc., 3-53-2 Shiratori, Shiroishi, Miyagi, 989-0734 (Japan); Naganuma, Kaori; Tamamura, Koshi [Core Technology Development Group, Micro Systems Network Company, Sony Corporation, 4-14-1 Asahi-cho, Atsugi-shi Kanagawa, 243-0041 (Japan)

    2003-11-01

    AlGaInN-based blue-violet laser diodes with a single broad-area stripe emitter were successfully fabricated on GaN substrates. Three stripe widths were examined; 10, 50, and 100 {mu}m, and the maximum light output power of 0.94 W under cw operation at 20 C was achieved for the sample with a stripe width of 10 {mu}m. A super high-power laser diode array was fabricated using 11 of these high-performance laser chips, with a resultant output power of 6.1 W under cw operation at 20 C. This result represents the highest reported output power for blue-violet laser diodes. (copyright 2003 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  1. Effect of substrate on the growth, nutritional and bioactive ...

    African Journals Online (AJOL)

    rosemary

    2016-07-06

    Jul 6, 2016 ... growth, determining nutritional and bioactive components of two oyster mushroom, Pleurotus ostreatus and. Pleurotus ... and the method of cultivation are of major importance ..... rendered alkaline with a few drops of ammonia solution. 5 ..... production and non-enzymatic antioxidant activity of Pleurotus.

  2. The Aspergillus niger growth on the treated concrete substrate using variable antifungals

    Science.gov (United States)

    Parjo, U. K.; Sunar, N. M.; Leman, A. M.; Gani, P.; Embong, Z.; Tajudin, S. A. A.

    2016-11-01

    The aim of this study was to evaluate the Aspergillus niger (A. niger) growth on substrates after incorporates with different compounds of antifungals which is normally used in food industry. The antifungals named as potassium sorbate (PS), calcium benzoate (CB) and zinc salicylate (ZS) were applied on concrete substrate covered with different wall finishing such as acrylic paint (AP), glycerol based paint (GBP), thin wallpaper (THIN) and thick wallpaper (THICK). The concrete substrate were inoculated with spore suspension, incubated at selected temperature (30oC) and relative humidity (90%)in plant growth chamber. The observations were done from the Day 3 until Day 27. The results showed that the growth of the A. niger for concrete treated by PS for AP, GBP, THIN, and THICK were 64%, 32%, 11% and 100%, respectively. Meanwhile for CB, the growth of A. niger on AP, GBP, THIN, and THICK were 100%, 12%, 41%, and 13%, respectively. Similarly, treated concrete by ZS revealed that the growth of A. niger on the same substrate cover were 33%, 47%, 40%, and 39%, respectively. The results obtained in this study provide a valuable knowledge on the abilities of antifungals to remediate A. niger that inoculated on the concrete substrate. Consequently, this study proved that the PS covering with THIN more efficiency compares CB and ZS to prevent A. niger growth.

  3. Growth, Plastochron, and the Final Number of Nodes of China Pink Seedlings Grown on Different Substrates

    Directory of Open Access Journals (Sweden)

    Marília Milani

    Full Text Available ABSTRACT The objective of this work was to plot the growth curves and determine the plastochron and the final number of nodes of China pink seedlings grown on different substrates. Thus, 392 China pink seedlings were grown on seven substrates under greenhouse conditions, in Santa Maria in the state of Rio Grande do Sul, Brazil. The growth curves were plotted using the logistic model. The plastochron was estimated by the inverse of the angular coefficient of the simple linear regression between the number of accumulated nodes and accumulated thermal sum from the subsampling of the seedlings. In all substrates, the logistic model fit better for the variable number of leaves than for the plant height. The plants in substrates with 50% of soil plus 50% of rice husk ash, and 80% of rice husk ash plus 20% earthworm humus had the longest cycles with 74 and 65 days, respectively. They completed the cycles with a thermal sum of 1317.9 ºC day for number of leaves and plant height. The growth curves that were plotted by the logistic model and the plastochron of the China pink seedlings are dependent on the type of substrate used. The commercial substrate Mecplant® had the best results. The average final number of nodes of the main stem of the plants was 14 for all substrates.

  4. Growth and yield of Dutch cucumber grown in a protected environment and with alternative organic substrates

    Directory of Open Access Journals (Sweden)

    Cinthya Meneses Fernández

    2018-05-01

    Full Text Available The replacement of imported substrates by local materials is a trend in severaltechnifiedproduction systems, given the cost reduction and the importance of agricultural by-products, formerly considered to be waste. The main objective of this work was to validate the effect of different substrates on the growth and productivity of Dutch cucumber plants under greenhouse conditions. The study took place from October 2012 to January 2013, at the Agricultural Experiment Station Fabio Baudrit, Alajuela, Costa Rica. Variety Fuerte was used and four mixed substrates (volume ratio made of local raw materials as coconut fiber (FC, oil palm leaf fiber (FP, organic compost (ABO, and sawdust (AS as well as a commercial treatment (control constituted by coco coir slabs were analyzed. Substrate water content, plant growth (vegetative phase, and yield were evaluated according to commercial size (S, M, L, XL, and rejected. The growth of Dutch cucumber plants, variety Fuerte, was higher on substrates with coconut fiber 40% + oil palm leaf fiber 40% + organic compost 20%, and coconut fiber 70% + organic compost 30%, while yield of the same two substrates was 15.57 and 15.44 kg/m2, respectively. Both treatments were statistically equal to the commercial coco coir substrate slabs with a yield of 14.77 kg/m2. Result attributed to the nutritional contribution of the organic compost (high K, Ca, and Mg along with and to the effects of aeration and water retention of fibers.

  5. Unbounded autocatalytic growth on diffusive substrate: The extinction transition

    International Nuclear Information System (INIS)

    Moalem, Sasi; Shnerb, Nadav M.

    2007-01-01

    The effect of diffusively correlated spatial fluctuations on the proliferation-extinction transition of autocatalytic agents is investigated numerically. Reactants adaptation to spatio-temporal active regions is shown to lead to proliferation even if the mean field rate equations predict extinction, in agreement with previous theoretical predictions. While in the proliferation phase the system admits a typical time scale that dictates the exponential growth, the extinction times distribution obeys a power law at the parameter region considered

  6. Epitaxial growth on porous GaAs substrates

    Czech Academy of Sciences Publication Activity Database

    Grym, Jan; Nohavica, Dušan; Gladkov, Petar; Hulicius, Eduard; Pangrác, Jiří; Piksová, K.

    2013-01-01

    Roč. 16, č. 1 (2013), s. 59-64 ISSN 1631-0748 R&D Projects: GA ČR GAP102/10/1201; GA ČR GAP108/10/0253 Institutional support: RVO:67985882 ; RVO:68378271 Keywords : Electrochemical etching * Porous semiconductors * Epitaxial growth * GaAs Subject RIV: BH - Optics, Masers, Lasers; JA - Electronics ; Optoelectronics, Electrical Engineering (FZU-D) Impact factor: 1.483, year: 2013

  7. Influence of the Hydrothermal Method Growth Parameters on the Zinc Oxide Nanowires Deposited on Several Substrates

    Directory of Open Access Journals (Sweden)

    Concepción Mejía-García

    2014-01-01

    Full Text Available We report the synthesis of ZnO nanowires grown on several substrates (PET, glass, and Si using a two-step process: (a preparation of the seed layer on the substrate by spin coating, from solutions of zinc acetate dihydrate and 1-propanol, and (b growth of the ZnO nanostructures by dipping the substrate in an equimolar solution of zinc nitrate hexahydrate and hexamethylenetetramine. Subsequently, films were thermally treated with a commercial microwave oven (350 and 700 W for 5, 20, and 35 min. The ZnO nanowires obtained were characterized structurally, morphologically, and optically using XRD, SEM, and UV-VIS transmission, respectively. XRD patterns spectra revealed the presence of Zn(OH2 on the films grown on glass and Si substrates. A preferential orientation along c-axis directions for films grown on PET substrate was observed. An analysis by SEM revealed that the growth of the ZnO nanowires on PET and glass is better than the growth on Si when the same growth parameters are used. On glass substrates, ZnO nanowires less than 50 nm in diameter and between 200 nm and 1200 nm in length were obtained. The ZnO nanowires band gap energy for the films grown on PET and glass was obtained from optical transmission spectra.

  8. Effects of substrate concentrations on the growth of heterotrophic bacteria and algae in secondary facultative ponds.

    Science.gov (United States)

    Kayombo, S; Mbwette, T S A; Katima, J H Y; Jorgensen, S E

    2003-07-01

    This paper presents the effect of substrate concentration on the growth of a mixed culture of algae and heterotrophic bacteria in secondary facultative ponds (SFPs) utilizing settled domestic sewage as a sole source of organic carbon. The growth of the mixed culture was studied at the concentrations ranging between 200 and 800 mg COD/l in a series of batch chemostat reactors. From the laboratory data, the specific growth rate (micro) was determined using the modified Gompertz model. The maximum specific growth rate ( micro(max)) and half saturation coefficients (K(s)) were calculated using the Monod kinetic equation. The maximum observed growth rate ( micro(max)) for heterotrophic bacteria was 3.8 day(-1) with K(s) of 200 mg COD/l. The micro(max) for algal biomass based on suspended volatile solids was 2.7 day(-1) with K(s) of 110 mg COD/l. The micro(max) of algae based on the chlorophyll-a was 3.5 day(-1) at K(s) of 50mg COD/l. The observed specific substrate removal by heterotrophic bacteria varied between the concentrations of substrate used and the average value was 0.82 (mg COD/mg biomass). The specific substrate utilization rate in the bioreactors was direct proportional to the specific growth rate. Hence, the determined Monod kinetic parameters are useful for the definition of the operation of SFPs.

  9. Aqueous chemical growth and patterning of ZnO nanopillars on different substrate materials

    Energy Technology Data Exchange (ETDEWEB)

    Kreye, M.; Postels, B.; Wehmann, H.H.; Waag, A. [Institute of Semiconductor Technology, Technical University of Braunschweig, Hans-Sommer-Strasse 66, 38106 Braunschweig (Germany); Fuhrmann, D.; Hangleiter, A. [Institute of Applied Physics, Technical University of Braunschweig, Mendelssohnstrasse 2, 38106 Braunschweig (Germany)

    2006-03-15

    Aqueous chemical growth (ACG) is a low-temperature approach that is only weakly influenced by the substrate and allows for the growth of ZnO nanopillars on various substrates. ACG is an efficient way to generate wafer-scale and densely packed arrays of ZnO nanopillars even on polymer materials. Photoluminescence (PL) characterisation clearly shows a comparatively strong band-edge luminescence even at room temperature that is accompanied with a rather weak visible luminescence in the yellow/orange spectral range. We introduce a rather simple postgrowth lithographic technique. Patterning of ZnO nanopillars even on layered conducting and flexible substrate materials using ACG as a low-temperature growth technique is demonstrated. The economical potential for future applications and devices using ZnO nanopillar arrays is discussed. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  10. Growth and sporulation of Trichoderma polysporum on organic substrates by addition of carbon and nitrogen sources

    International Nuclear Information System (INIS)

    Rajput, A.Q.; Shahzad, S.

    2015-01-01

    During the present study nine different organic substrates viz., rice grains, sorghum grains, wheat grains, millet grains, wheat straw, rice husk, cow dung, sawdust and poultry manure were used for mass multiplication of Trichoderma polysporum. Grains, especially sorghum grains were found to be the best substrate for T. polysporum. Wheat straw and rice husk were less suitable, whereas, cow dung, sawdust and poultry manure were not suitable for growth of the fungus. Sucrose at the rate of 30,000 ppm and ammonium nitrate at the rate of 3,000 ppm were found to be the best carbon and nitrogen sources for growth and sporulation of T. polysporum. Amendment of the selected C and N sources to wheat straw, rice husk and millet grains resulted in significantly higher growth and conidia production by T. polysporum as compared to un-amended substrates. Sorghum and rice grains showed suppression in growth and sporulation of T. polysporum when amended with C and N sources. During studies on shelf life, populations of T. polysporum attained the peck at 60-135 days intervals on different substrates and declined gradually thereafter. However, even after 330 days, the populations were greater than the population at 0-day. At 345-360 days interval, populations were less than the initial populations at 0- days. Shelf life on C+N amended wheat straw and rice husk were more as compared to un-amended substrates. (author)

  11. Mammalian cell growth on gold nanoparticle-decorated substrates is influenced by the nanoparticle coating

    Directory of Open Access Journals (Sweden)

    Christina Rosman

    2014-12-01

    Full Text Available In this work, we study epithelial cell growth on substrates decorated with gold nanorods that are functionalized either with a positively charged cytotoxic surfactant or with a biocompatible polymer exhibiting one of two different end groups, resulting in a neutral or negative surface charge of the particle. Upon observation of cell growth for three days by live cell imaging using optical dark field microscopy, it was found that all particles supported cell adhesion while no directed cell migration and no significant particle internalization occurred. Concerning cell adhesion and spreading as compared to cell growth on bare substrates after 3 days of incubation, a reduction by 45% and 95%, respectively, for the surfactant particle coating was observed, whereas the amino-terminated polymer induced a reduction by 30% and 40%, respectively, which is absent for the carboxy-terminated polymer. Furthermore, interface-sensitive impedance spectroscopy (electric cell–substrate impedance sensing, ECIS was employed in order to investigate the micromotility of cells added to substrates decorated with various amounts of surfactant-coated particles. A surface density of 65 particles/µm2 (which corresponds to 0.5% of surface coverage with nanoparticles diminishes micromotion by 25% as compared to bare substrates after 35 hours of incubation. We conclude that the surface coating of the gold nanorods, which were applied to the basolateral side of the cells, has a recognizable influence on the growth behavior and thus the coating should be carefully selected for biomedical applications of nanoparticles.

  12. Growth on elastic silicone substrate elicits a partial myogenic response in periodontal ligament derived stem cells

    Directory of Open Access Journals (Sweden)

    Daniel Pelaez

    2016-12-01

    Full Text Available The processes of cellular differentiation and phenotypic maintenance can be influenced by stimuli from a variety of different factors. One commonly overlooked factor is the mechanical properties of the growth substrate in which stem cells are maintained or differentiated down various lineages. Here we explored the effect that growth on an elastic silicone substrate had on the myogenic expression and cytoskeletal morphology of periodontal ligament derived stem cells. Cells were grown on either collagen I coated tissue culture polystyrene plates or collagen I coated elastic silicone membranes for a period of 4 days without further induction from soluble factors in the culture media. Following the 4-day growth, gene expression and immunohistochemical analysis for key cardiomyogenic markers was performed along with a morphological assessment of cytoskeletal organization. Results show that cells grown on the elastic substrate significantly upregulate key markers associated with contractile activity in muscle tissues. Namely, the myosin light chain polypeptides 2 and 7, as well as the myosin heavy chain polypeptide 7 genes underwent a statistically significant upregulation in the cells grown on elastic silicone membranes. Similarly, the cells on the softer elastic substrate stained positive for both sarcomeric actin and cardiac troponin t proteins following just 4 days of growth on the softer material. Cytoskeletal analysis showed that substrate stiffness had a marked effect on the organization and distribution of filamentous actin fibers within the cell body. Growth on silicone membranes produced flatter and shorter cellular morphologies with filamentous actin fibers projecting anisotropically throughout the cell body. These results demonstrate how crucial the mechanical properties of the growth substrate of cells can be on the ultimate cellular phenotype. These observations highlight the need to further optimize differentiation protocols to enhance

  13. Growth of Gold-assisted Gallium Arsenide Nanowires on Silicon Substrates via Molecular Beam Epitaxy

    Directory of Open Access Journals (Sweden)

    Ramon M. delos Santos

    2008-06-01

    Full Text Available Gallium arsenide nanowires were grown on silicon (100 substrates by what is called the vapor-liquid-solid (VLS growth mechanism using a molecular beam epitaxy (MBE system. Good quality nanowires with surface density of approximately 108 nanowires per square centimeter were produced by utilizing gold nanoparticles, with density of 1011 nanoparticles per square centimeter, as catalysts for nanowire growth. X-ray diffraction measurements, scanning electron microscopy, transmission electron microscopy and Raman spectroscopy revealed that the nanowires are epitaxially grown on the silicon substrates, are oriented along the [111] direction and have cubic zincblende structure.

  14. Evaluation of pyritic mine tailings as a plant growth substrate.

    Science.gov (United States)

    Roseby, Stuart J; Kopittke, Peter M; Mulligan, David R; Menzies, Neal W

    2017-10-01

    At the Kidston gold mine, Australia, the direct establishment of vegetation on tailings was considered as an alternative to the use of a waste rock cover. The tailings acid/base account was used to predict plant growth limitation by acidity, and thus methods capable of identifying tailings that would acidify to pH 4.5 or lower were sought. Total S was found to be poorly correlated with acid-generating sulfide, and total C was poorly correlated with acid-neutralizing carbonate, precluding the use of readily determined total S and C as predictors of net acid generation. Therefore, the selected approach used assessment of sulfide content as a predictor of acid generation, and carbonate content as a measure of the acid-neutralizing capacity available at pH 5 and above. Using this approach, the majority of tailings (67%) were found to be non-acid generating. However, areas of potentially acid-generating tailings were randomly distributed across the dam, and could only be located by intensive sampling. The limitations imposed by the large sample numbers, and costly analysis of sulfide and carbonate, make it impractical to identify and ameliorate acid-generating areas prior to vegetation establishment. However, as only a small proportion of the tailings will acidify, a strategy of re-treating acid areas following oxidation is suggested. The findings of the present study will assist in the selection of appropriate methods for the prediction of net acid generation, particularly where more conservative measurements are required to allow vegetation to be established directly in tailings. Copyright © 2017 Elsevier Ltd. All rights reserved.

  15. Direct growth of cerium oxide nanorods on diverse substrates for superhydrophobicity and corrosion resistance

    Energy Technology Data Exchange (ETDEWEB)

    Cho, Young Jun; Jang, Hanmin; Lee, Kwan-Soo [School of Mechanical Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Kim, Dong Rip, E-mail: dongrip@hanyang.ac.kr [School of Mechanical Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Institute of Nano Science and Technology, Hanyang University, Seoul 133-791 (Korea, Republic of)

    2015-06-15

    Graphical abstract: - Highlights: • Cerium oxide nanorods were uniformly grown on diverse substrates. • Changes in growth conditions led to morphology evolution of cerium oxide nanostructures. • The grown cerium oxide nanostructures were single or poly crystalline. • Direct growth of cerium oxide nanorods made the diverse substrates superhydrophobic and anti-corrosive without any surface modifiers. - Abstract: Superhydrophobic surfaces with anti-corrosion properties have attracted great interest in many industrial fields, particularly to enhance the thermal performance of offshore applications such as heat exchangers, pipelines, power plants, and platform structures. Nanostructures with hydrophobic materials have been widely utilized to realize superhydrophobicity of surfaces, and cerium oxide has been highlighted due to its good corrosion resistive and intrinsically hydrophobic properties. However, few studies of direct growth of cerium oxide nanostructures on diverse substrates have been reported. Herein we report a facile hydrothermal method to directly grow cerium oxide nanorods on diverse substrates, such as aluminum alloy, stainless steel, titanium, and silicon. Diverse substrates with cerium oxide nanorods exhibited superhydrophobicity with no hydrophobic modifiers on their surfaces, and showed good corrosion resistive properties in corrosive medium. We believe our method could pave the way for realization of scalable and sustainable corrosion resistive superhydrophobic surfaces in many industrial fields.

  16. Direct growth of cerium oxide nanorods on diverse substrates for superhydrophobicity and corrosion resistance

    International Nuclear Information System (INIS)

    Cho, Young Jun; Jang, Hanmin; Lee, Kwan-Soo; Kim, Dong Rip

    2015-01-01

    Graphical abstract: - Highlights: • Cerium oxide nanorods were uniformly grown on diverse substrates. • Changes in growth conditions led to morphology evolution of cerium oxide nanostructures. • The grown cerium oxide nanostructures were single or poly crystalline. • Direct growth of cerium oxide nanorods made the diverse substrates superhydrophobic and anti-corrosive without any surface modifiers. - Abstract: Superhydrophobic surfaces with anti-corrosion properties have attracted great interest in many industrial fields, particularly to enhance the thermal performance of offshore applications such as heat exchangers, pipelines, power plants, and platform structures. Nanostructures with hydrophobic materials have been widely utilized to realize superhydrophobicity of surfaces, and cerium oxide has been highlighted due to its good corrosion resistive and intrinsically hydrophobic properties. However, few studies of direct growth of cerium oxide nanostructures on diverse substrates have been reported. Herein we report a facile hydrothermal method to directly grow cerium oxide nanorods on diverse substrates, such as aluminum alloy, stainless steel, titanium, and silicon. Diverse substrates with cerium oxide nanorods exhibited superhydrophobicity with no hydrophobic modifiers on their surfaces, and showed good corrosion resistive properties in corrosive medium. We believe our method could pave the way for realization of scalable and sustainable corrosion resistive superhydrophobic surfaces in many industrial fields

  17. Molecular-mediated crystal growth of PbTiO3 nanostructure on silicon substrate

    International Nuclear Information System (INIS)

    Chao Chunying; Ren Zhaohui; Liu Zhenya; Xiao Zhen; Xu Gang; Li Xiang; Wei Xiao; Shen Ge; Han Gaorong

    2011-01-01

    A simple approach based on an organically modified sol-gel process has been developed to fabricate PbTiO 3 (PT) nanocrystals on Si (1 0 0) substrate, where the amorphous powder modified by acetylacetone (acac) was used as precursor. After dropping the amorphous powder precursor prepared by freeze-drying process, PT nanocrystals on Si (1 0 0) substrate were obtained after heat treatment at 720 deg. C for 30 min in air. PT nanocrystals have been detected by XRD to be tetragonal perovskite structure. With the increase of acac/Pb molar ratio, the relative (1 0 0)/(0 0 1) diffraction peak intensity gradually increases, which probably suggested an oriented growth of PT nanocrystal along [1 0 0] on Si (1 0 0) substrates. In addition, Atomic force microscopy (AFM) results indicated that the height and the average lateral size of PT nanocrystal increased and then decreased as the acac/Pb molar ratio increased. Piezoelectric force microscopy (PFM) results demonstrated that all the samples show obvious piezoelectric activity. These results implied that the acetylacetone molecular mediated the growth of PT nanocrystals on Si (1 0 0) substrates possibly by the acac/Pb molar ratio. This simple method has been suggested to be attractive for tailoring an oriented growth of the nanostructures of perovskite oxide systems on Si substrates.

  18. Molecular Beam Epitaxial Growth of GaAs on (631) Oriented Substrates

    International Nuclear Information System (INIS)

    Cruz Hernandez, Esteban; Rojas Ramirez, Juan-Salvador; Contreras Hernandez, Rocio; Lopez Lopez, Maximo; Pulzara Mora, Alvaro; Mendez Garcia, Victor H.

    2007-01-01

    In this work, we report the study of the homoepitaxial growth of GaAs on (631) oriented substrates by molecular beam epitaxy (MBE). We observed the spontaneous formation of a high density of large scale features on the surface. The hilly like features are elongated towards the [-5, 9, 3] direction. We show the dependence of these structures with the growth conditions and we present the possibility of to create quantum wires structures on this surface

  19. Patterned growth of carbon nanotubes on Si substrates without predeposition of metal catalysts

    Science.gov (United States)

    Chen, Y.; Yu, J.

    2005-07-01

    Aligned carbon nanotubes (CNTs) can be readily synthesized on quartz or silicon-oxide-coated Si substrates using a chemical vapor deposition method, but it is difficult to grow them on pure Si substrates without predeposition of metal catalysts. We report that aligned CNTs were grown by pyrolysis of iron phthalocyanine at 1000°C on the templates created on Si substrates with simple mechanical scratching. Scanning electron microscopy and x-ray energy spectroscopy analysis revealed that the trenches and patterns created on the surface of Si substrates were preferred nucleation sites for nanotube growth due to a high surface energy, metastable surface structure, and possible capillarity effect. A two-step pyrolysis process maintained Fe as an active catalyst.

  20. Growth of bi- and tri-layered graphene on silicon carbide substrate via molecular dynamics simulation

    Energy Technology Data Exchange (ETDEWEB)

    Min, Tjun Kit; Yoon, Tiem Leong [School of Physics, Universiti Sains Malaysia, 11800 USM, Penang (Malaysia); Lim, Thong Leng [Faculty of Engineering and Technology, Multimedia University, Melaka Campus, 75450 Melaka (Malaysia)

    2015-04-24

    Molecular dynamics (MD) simulation with simulated annealing method is used to study the growth process of bi- and tri-layered graphene on a 6H-SiC (0001) substrate via molecular dynamics simulation. Tersoff-Albe-Erhart (TEA) potential is used to describe the inter-atomic interactions among the atoms in the system. The formation temperature, averaged carbon-carbon bond length, pair correlation function, binding energy and the distance between the graphene formed and the SiC substrate are quantified. The growth mechanism, graphitization of graphene on the SiC substrate and characteristics of the surface morphology of the graphene sheet obtained in our MD simulation compare well to that observed in epitaxially grown graphene experiments and other simulation works.

  1. Rapid growth of single-layer graphene on the insulating substrates by thermal CVD

    Energy Technology Data Exchange (ETDEWEB)

    Chen, C.Y. [Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093 (China); Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Dai, D.; Chen, G.X.; Yu, J.H. [Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Nishimura, K. [Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Advanced Nano-processing Engineering Lab, Mechanical Systems Engineering, Kogakuin University (Japan); Lin, C.-T. [Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Jiang, N., E-mail: jiangnan@nimte.ac.cn [Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Zhan, Z.L., E-mail: zl_zhan@sohu.com [Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093 (China)

    2015-08-15

    Highlights: • A rapid thermal CVD process has been developed to directly grow graphene on the insulating substrates. • The treating time consumed is ≈25% compared to conventional CVD procedure. • Single-layer and few-layer graphene can be formed on quartz and SiO{sub 2}/Si substrates, respectively. • The formation of thinner graphene at the interface is due to the fast precipitation rate of carbon atoms during cooling. - Abstract: The advance of CVD technique to directly grow graphene on the insulating substrates is particularly significant for further device fabrication. As graphene is catalytically grown on metal foils, the degradation of the sample properties is unavoidable during transfer of graphene on the dielectric layer. Moreover, shortening the treatment time as possible, while achieving single-layer growth of graphene, is worthy to be investigated for promoting the efficiency of mass production. Here we performed a rapid heating/cooling process to grow graphene films directly on the insulating substrates by thermal CVD. The treating time consumed is ≈25% compared to conventional CVD procedure. In addition, we found that high-quality, single-layer graphene can be formed on quartz, but on SiO{sub 2}/Si substrate only few-layer graphene can be obtained. The pronounced substrate effect is attributed to the different dewetting behavior of Ni films on the both substrates at 950 °C.

  2. Effect of Different Substrates and Casing Materials on the Growth and Yield of Calocybe indica.

    Science.gov (United States)

    Amin, Ruhul; Khair, Abul; Alam, Nuhu; Lee, Tae Soo

    2010-06-01

    Calocybe indica, a tropical edible mushroom, is popular because it has good nutritive value and it can be cultivated commercially. The current investigation was undertaken to determine a suitable substrate and the appropriate thickness of casing materials for the cultivation of C. indica. Optimum mycelial growth was observed in coconut coir substrate. Primordia initiation with the different substrates and casing materials was observed between the 13th and 19th day. The maximum length of stalk was recorded from sugarcane leaf, while diameter of stalk and pileus, and thickness of pileus were found in rice straw substrate. The highest biological and economic yield, and biological efficiency were also obtained in the rice straw substrate. Cow dung and loamy soil, farm-yard manure, loamy soil and sand, and spent oyster mushroom substrates were used as casing materials to evaluate the yield and yield-contributing characteristics of C. indica. The results indicate that the number of effective fruiting bodies, the biological and economic yield, and the biological efficiency were statistically similar all of the casing materials used. The maximum biological efficiency was found in the cow dung and loamy soil casing material. The cow dung and loamy soil (3 cm thick) was the best casing material and the rice straw was the best substrate for the commercial cultivation of C. indica.

  3. Transfer free graphene growth on SiO2 substrate at 250 °C

    Science.gov (United States)

    Vishwakarma, Riteshkumar; Rosmi, Mohamad Saufi; Takahashi, Kazunari; Wakamatsu, Yuji; Yaakob, Yazid; Araby, Mona Ibrahim; Kalita, Golap; Kitazawa, Masashi; Tanemura, Masaki

    2017-03-01

    Low-temperature growth, as well as the transfer free growth on substrates, is the major concern of graphene research for its practical applications. Here we propose a simple method to achieve the transfer free graphene growth on SiO2 covered Si (SiO2/Si) substrate at 250 °C based on a solid-liquid-solid reaction. The key to this approach is the catalyst metal, which is not popular for graphene growth by chemical vapor deposition. A catalyst metal film of 500 nm thick was deposited onto an amorphous C (50 nm thick) coated SiO2/Si substrate. The sample was then annealed at 250 °C under vacuum condition. Raman spectra measured after the removal of the catalyst by chemical etching showed intense G and 2D peaks together with a small D and intense SiO2 related peaks, confirming the transfer free growth of multilayer graphene on SiO2/Si. The domain size of the graphene confirmed by optical microscope and atomic force microscope was about 5 μm in an average. Thus, this approach will open up a new route for transfer free graphene growth at low temperatures.

  4. Effect of Trichoderma on horticultural seedlings' growth promotion depending on inoculum and substrate type.

    Science.gov (United States)

    Marín-Guirao, J I; Rodríguez-Romera, P; Lupión-Rodríguez, B; Camacho-Ferre, F; Tello-Marquina, J C

    2016-10-01

    The biostimulant effect of Trichoderma spp. on horticultural crops are highly variable. Thus, practical use of Trichoderma sp. requires feasible formulated products and suitable substrates. This study evaluates the survival and the growth-promotion effect of a Trichoderma saturnisporum rice formulation compared with a nonformulated conidia suspension (seven treatments in total), on tomato, pepper and cucumber seedlings grown in two substrates: (i) rich in organic matter (OM) and (ii) mineral substrate without OM. The results showed beneficial effects on seedling growth in the OM-rich substrate when T. saturnisporum rice formulation (mainly at maximum concentration) was applied, but the effects were opposite when the mineral substrate without OM was used. The effects were closely linked to the level of inoculum in the substrate, which was greater upon application of the formulated inoculum as opposed to the nonformulated one. The use of rice to prepare the inoculum of T. saturnisporum seems to be promising for seedling growth in the nursery when it is applied in a substrate that is rich in organic matter, but it must be considered that under certain conditions of food shortage, Trichoderma sp. could show pathogenicity to seedlings. This study provides evidence of the complexity inherent in the use of micro-organisms in agriculture, while also confirming that the activity of the biofertilizers based on Trichoderma depends on the type of inoculum and its concentration, as well as the properties of the medium in which the fungi develop. Further studies assessing the effectiveness or possible pathogenicity of Trichoderma in different soils under greenhouse conditions must be addressed. © 2016 The Society for Applied Microbiology.

  5. Growth on nonpolar and semipolar GaN: The substrate dilemma

    Energy Technology Data Exchange (ETDEWEB)

    Wernicke, T.; Weyers, M. [Ferdinand-Braun-Institute, Berlin (Germany); Kneissl, M. [Ferdinand-Braun-Institute, Berlin (Germany); Institute of Solid State Physics, TU Berlin (Germany)

    2009-07-01

    Growth of nonpolar and semipolar GaN is very promising for achieving green laser diodes (LDs). However, the choice of the substrate is a difficult one: Heteroepitaxial growth on sapphire, SiC, LiAlO{sub 2} yields GaN films with a poor surface quality and high defect densities. On the other hand non- and semipolar bulk GaN substrates provide excellent crystal quality, but are so far only available in very small sizes. In this paper hetero- and homoepitaxial growth is compared. For all heteroepitaxially grown semi- and nonpolar GaN layers threading dislocations (TD) and basal plane stacking faults (BSF) can be found. There are four possible mechanisms for the generation of BSF: Growth of the N-polar basal plane, formation during nucleation at substrate steps, formation at the coalescence front of differently stacked nucleation islands, and generation at planar defects occurring in m-plane GaN on LiAlO{sub 2}. BSF induce surface roughening and are associated with partial dislocations causing nonradiative recombination. Thus they affect the performance of devices. We show that BSFs and TDs can be reduced by epitaxial lateral overgrowth resulting in several micrometer wide defect free areas. However, for LEDs larger defect-free areas are required. GaN layers grown on bulk GaN substrates exhibit a high crystal quality, but show in many cases long-range surface structures with a height of {approx}1{mu}m.

  6. The relative importance of exogenous and substrate-derived nitrogen for microbial growth during leaf decomposition

    Science.gov (United States)

    B.M. Cheever; J. R. Webster; E. E. Bilger; S. A. Thomas

    2013-01-01

    Heterotrophic microbes colonizing detritus obtain nitrogen (N) for growth by assimilating N from their substrate or immobilizing exogenous inorganic N. Microbial use of these two pools has different implications for N cycling and organic matter decomposition in the face of the global increase in biologically available N. We used sugar maple leaves labeled with

  7. Plasma deposition of thin film silicon at low substrate temperature and at high growth rate

    NARCIS (Netherlands)

    Verkerk, A.D.|info:eu-repo/dai/nl/304831719

    2009-01-01

    To expand the range of applications for thin film solar cells incorporating hydrogenated amorphous silicon (a-Si:H) and hydrogenated nanocrystalline silicon (nc-Si:H), the growth rate has to be increased 0.5 or less to several nm/s and the substrate temperature should be lowered to around 100 C. In

  8. Selective-area growth and controlled substrate coupling of transition metal dichalcogenides

    Science.gov (United States)

    Bersch, Brian M.; Eichfeld, Sarah M.; Lin, Yu-Chuan; Zhang, Kehao; Bhimanapati, Ganesh R.; Piasecki, Aleksander F.; Labella, Michael, III; Robinson, Joshua A.

    2017-06-01

    Developing a means for true bottom-up, selective-area growth of two-dimensional (2D) materials on device-ready substrates will enable synthesis in regions only where they are needed. Here, we demonstrate seed-free, site-specific nucleation of transition metal dichalcogenides (TMDs) with precise control over lateral growth by utilizing an ultra-thin polymeric surface functionalization capable of precluding nucleation and growth. This polymer functional layer (PFL) is derived from conventional photoresists and lithographic processing, and is compatible with multiple growth techniques, precursors (metal organics, solid-source) and TMDs. Additionally, we demonstrate that the substrate can play a major role in TMD transport properties. With proper TMD/substrate decoupling, top-gated field-effect transistors (FETs) fabricated with selectively-grown monolayer MoS2 channels are competitive with current reported MoS2 FETs. The work presented here demonstrates that substrate surface engineering is key to realizing precisely located and geometrically-defined 2D layers via unseeded chemical vapor deposition techniques.

  9. Effects of substrate type on plant growth and nitrogen and nitrate concentration in spinach

    Science.gov (United States)

    The effects of three commercial substrates (a mixture of forest residues, composted grape husks, and white peat; black peat; and coir) on plant growth and nitrogen (N) and nitrate (NO3) concentration and content were evaluated in spinach (Spinacia oleracea L. cv. Tapir). Spinach seedlings were trans...

  10. Stress-driven lithium dendrite growth mechanism and dendrite mitigation by electroplating on soft substrates

    Science.gov (United States)

    Wang, Xu; Zeng, Wei; Hong, Liang; Xu, Wenwen; Yang, Haokai; Wang, Fan; Duan, Huigao; Tang, Ming; Jiang, Hanqing

    2018-03-01

    Problems related to dendrite growth on lithium-metal anodes such as capacity loss and short circuit present major barriers to next-generation high-energy-density batteries. The development of successful lithium dendrite mitigation strategies is impeded by an incomplete understanding of the Li dendrite growth mechanisms, and in particular, Li-plating-induced internal stress in Li metal and its effect on Li growth morphology are not well addressed. Here, we reveal the enabling role of plating residual stress in dendrite formation through depositing Li on soft substrates and a stress-driven dendrite growth model. We show that dendrite growth is mitigated on such soft substrates through surface-wrinkling-induced stress relaxation in the deposited Li film. We demonstrate that this dendrite mitigation mechanism can be utilized synergistically with other existing approaches in the form of three-dimensional soft scaffolds for Li plating, which achieves higher coulombic efficiency and better capacity retention than that for conventional copper substrates.

  11. Three-dimensional growth simulation: A study of substrate oriented films

    International Nuclear Information System (INIS)

    Besnard, A; Martin, N; Carpentier, L

    2010-01-01

    Monte Carlo simulations are developed to simulate the growth of three-dimensional columnar microstructure in thin films. We are studying in particular oriented microstructure like those produced with the Glancing Angle Deposition technique (GLAD). Some geometrical characteristics of the particles flux, the organization of defect sites on the substrate surface and the atomic surface diffusion are mainly investigated in order to predict the growth processes and the resulting features of the films. This study reports on simulations of thin film growth exhibiting an oblique and zigzag columnar microstructure. Column angle evolution and density are investigated versus incidence angle α or period number n and compared with experimental measurements.

  12. Graphene growth on Ge(100)/Si(100) substrates by CVD method.

    Science.gov (United States)

    Pasternak, Iwona; Wesolowski, Marek; Jozwik, Iwona; Lukosius, Mindaugas; Lupina, Grzegorz; Dabrowski, Pawel; Baranowski, Jacek M; Strupinski, Wlodek

    2016-02-22

    The successful integration of graphene into microelectronic devices is strongly dependent on the availability of direct deposition processes, which can provide uniform, large area and high quality graphene on nonmetallic substrates. As of today the dominant technology is based on Si and obtaining graphene with Si is treated as the most advantageous solution. However, the formation of carbide during the growth process makes manufacturing graphene on Si wafers extremely challenging. To overcome these difficulties and reach the set goals, we proposed growth of high quality graphene layers by the CVD method on Ge(100)/Si(100) wafers. In addition, a stochastic model was applied in order to describe the graphene growth process on the Ge(100)/Si(100) substrate and to determine the direction of further processes. As a result, high quality graphene was grown, which was proved by Raman spectroscopy results, showing uniform monolayer films with FWHM of the 2D band of 32 cm(-1).

  13. Modeling gravity effects on water retention and gas transport characteristics in plant growth substrates

    DEFF Research Database (Denmark)

    Deepagoda Thuduwe Kankanamge Kelum, Chamindu; Jones, Scott B.; Tuller, Markus

    2014-01-01

    utilization to conserve energy and to limit transport costs, native materials mined on Moon or Mars are of primary interest for plant growth media in a future outpost, while terrestrial porous substrates with optimal growth media characteristics will be useful for onboard plant growth during space missions....... Due to limited experimental opportunities and prohibitive costs, liquid and gas behavior in porous substrates under reduced gravity conditions has been less studied and hence remains poorly understood. Based on ground-based measurements, this study examined water retention, oxygen diffusivity and air...... that estimates the gas percolation threshold based on the pore size distribution. The model successfully captured measured data for all investigated media and demonstrated the implications of the poorly-understood shift in gas percolation threshold with improved gas percolation in reduced gravity. Finally, using...

  14. Epitaxial growth of AlN on single crystal Mo substrates

    International Nuclear Information System (INIS)

    Okamoto, Koichiro; Inoue, Shigeru; Nakano, Takayuki; Kim, Tae-Won; Oshima, Masaharu; Fujioka, Hiroshi

    2008-01-01

    We have grown AlN films on single-crystalline Mo(110), (100), and (111) substrates using a low temperature pulsed laser deposition (PLD) growth technique and investigated their structural properties. Although c-axis oriented AlN films grow on Mo(100), the films contain 30 o rotated domains due to the difference in the rotational symmetry between AlN(0001) and Mo(100). AlN films with only poor crystalline quality grow on Mo(111) substrates, probably due to the poor surface morphology and high reactivity of the substrates. On the other hand, single crystal AlN films grow epitaxially on Mo(110) substrates with an in-plane relationship of AlN[11-20] // Mo[001]. Reflection high-energy electron diffraction or electron backscattered diffraction analysis has revealed that neither in-plane 30 deg. rotated domains nor cubic phase domains exist in the AlN films. X-ray reflectivity measurements have revealed that the heterointerface between AlN and Mo prepared by PLD at 450 deg. C is quite abrupt. These results indicate that PLD epitaxial growth of AlN on single crystal Mo substrates is quite promising for the fabrication of future high frequency filter devices

  15. Epitaxial growth of AlN on single crystal Mo substrates

    Energy Technology Data Exchange (ETDEWEB)

    Okamoto, Koichiro; Inoue, Shigeru [Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo, 153-8505 (Japan); Nakano, Takayuki; Kim, Tae-Won [Kanagawa Academy of Science and Technology (KAST) KSP east 301, 3-2-1 Sakado, Takatsu-ku, Kawasaki, Kanagawa, 213-0012 (Japan); Oshima, Masaharu [Department of Applied Chemistry, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8656 (Japan); Fujioka, Hiroshi [Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo, 153-8505 (Japan); Kanagawa Academy of Science and Technology (KAST) KSP east 301, 3-2-1 Sakado, Takatsu-ku, Kawasaki, Kanagawa, 213-0012 (Japan)], E-mail: hfujioka@iis.u-tokyo.ac.jp

    2008-06-02

    We have grown AlN films on single-crystalline Mo(110), (100), and (111) substrates using a low temperature pulsed laser deposition (PLD) growth technique and investigated their structural properties. Although c-axis oriented AlN films grow on Mo(100), the films contain 30{sup o} rotated domains due to the difference in the rotational symmetry between AlN(0001) and Mo(100). AlN films with only poor crystalline quality grow on Mo(111) substrates, probably due to the poor surface morphology and high reactivity of the substrates. On the other hand, single crystal AlN films grow epitaxially on Mo(110) substrates with an in-plane relationship of AlN[11-20] // Mo[001]. Reflection high-energy electron diffraction or electron backscattered diffraction analysis has revealed that neither in-plane 30 deg. rotated domains nor cubic phase domains exist in the AlN films. X-ray reflectivity measurements have revealed that the heterointerface between AlN and Mo prepared by PLD at 450 deg. C is quite abrupt. These results indicate that PLD epitaxial growth of AlN on single crystal Mo substrates is quite promising for the fabrication of future high frequency filter devices.

  16. [Nutrient transfer and growth of Pinus greggii Engelm. inoculated with edible ectomycorrhizal mushrooms in two substrates].

    Science.gov (United States)

    Rentería-Chávez, María C; Pérez-Moreno, Jesús; Cetina-Alcalá, Víctor M; Ferrera-Cerrato, Ronald; Xoconostle-Cázares, Beatriz

    An ectomycorrhiza is a mutualistic symbiosis of paramount importance in forestry and tree production. One of the selection criteria of ectomycorrhizal fungi that has currently gained importance is their edibility due to the economic, ecological and cultural relevance of edible ectomycorrhizal mushrooms as a non-timber forest product. The effect of the inoculation with three edible ectomycorrhizal mushrooms: Laccaria laccata, Laccaria bicolor y Hebeloma leucosarx, which are widely sold in Mexico, on the growth and nutrient contents of Pinus greggii grown in an experimental substrate and a commercial substrate enriched with a slow-release fertilizer, was evaluated. Two years after sowing, differences in terms of shoot and root biomass and macro and micronutrient contents between inoculated and non-inoculated plants, were recorded independently of the fungal species and the substrate. Despite the fact that plants grown in the commercial substrate had higher growth and nutrient contents, their ectomycorrhizal colonization percentages were smaller than those of the plants grown in the experimental substrate. The differences in the nutrient transfer to the inoculated plant shoots among the evaluated fungal species were recorded. Ca mobilization by L. laccata, Na by L. bicolor and Mn by H. leucosarx were observed in the plants growing in the experimental substrate. It has been demonstrated that the selection of substrates constitutes an important factor in the production of ectomycorrhizal plants and that the three evaluated species of edible ectomycorrhizal mushrooms have an enormous potential in the controlled mycorrhization of P. greggii. Copyright © 2017 Asociación Argentina de Microbiología. Publicado por Elsevier España, S.L.U. All rights reserved.

  17. Direct growth of nanocrystalline hexagonal boron nitride films on dielectric substrates

    Energy Technology Data Exchange (ETDEWEB)

    Tay, Roland Yingjie [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore); Temasek Laboratories@NTU, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore); Tsang, Siu Hon [Temasek Laboratories@NTU, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore); Loeblein, Manuela; Chow, Wai Leong [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore); CNRS-International NTU Thales Research Alliance CINTRA UMI 3288, Research Techno Plaza, 50 Nanyang Drive, Singapore, Singapore 637553 (Singapore); Loh, Guan Chee [Institue of High Performance Computing, 1 Fusionopolis Way, #16-16 Connexis, Singapore 138632 (Singapore); Department of Physics, Michigan Technological University, Houghton, Michigan 49931 (United States); Toh, Joo Wah; Ang, Soon Loong [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore); Teo, Edwin Hang Tong, E-mail: htteo@ntu.edu.sg [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore); School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore)

    2015-03-09

    Atomically thin hexagonal-boron nitride (h-BN) films are primarily synthesized through chemical vapor deposition (CVD) on various catalytic transition metal substrates. In this work, a single-step metal-catalyst-free approach to obtain few- to multi-layer nanocrystalline h-BN (NCBN) directly on amorphous SiO{sub 2}/Si and quartz substrates is demonstrated. The as-grown thin films are continuous and smooth with no observable pinholes or wrinkles across the entire deposited substrate as inspected using optical and atomic force microscopy. The starting layers of NCBN orient itself parallel to the substrate, initiating the growth of the textured thin film. Formation of NCBN is due to the random and uncontrolled nucleation of h-BN on the dielectric substrate surface with no epitaxial relation, unlike on metal surfaces. The crystallite size is ∼25 nm as determined by Raman spectroscopy. Transmission electron microscopy shows that the NCBN formed sheets of multi-stacked layers with controllable thickness from ∼2 to 25 nm. The absence of transfer process in this technique avoids any additional degradation, such as wrinkles, tears or folding and residues on the film which are detrimental to device performance. This work provides a wider perspective of CVD-grown h-BN and presents a viable route towards large-scale manufacturing of h-BN substrates and for coating applications.

  18. Hydrogen-surfactant-assisted coherent growth of GaN on ZnO substrate

    Science.gov (United States)

    Zhang, Jingzhao; Zhang, Yiou; Tse, Kinfai; Zhu, Junyi

    2018-01-01

    Heterostructures of wurtzite based devices have attracted great research interest because of the tremendous success of GaN in light emitting diodes (LED) industry. High-quality GaN thin films on inexpensive and lattice matched ZnO substrates are both commercially and technologically desirable. Intrinsic wetting conditions, however, forbid such heterostructures as the energy of ZnO polar surfaces is much lower than that of GaN polar surfaces, resulting in 3D growth mode and poor crystal quality. Based on first-principles calculations, we propose the use of surfactant hydrogen to dramatically alter the growth mode of the heterostructures. Stable H-involved surface configurations and interfaces are investigated with the help of our newly developed modelling techniques. The temperature and chemical potential dependence of our proposed strategy, which is critical in experiments, is predicted by applying the experimental Gibbs free energy of H2. Our thermodynamic wetting condition analysis is a crucial step for the growth of GaN on ZnO, and we find that introducing H will not degrade the stability of ZnO substrate. This approach will allow the growth of high-quality GaN thin films on ZnO substrates. We believe that our new strategy may reduce the manufactory cost, improve the crystal quality, and improve the efficiency of GaN-based devices.

  19. Thermal oxidation of seeds for the hydrothermal growth of WO3 nanorods on ITO glass substrate

    International Nuclear Information System (INIS)

    Ng, Chai Yan; Abdul Razak, Khairunisak; Lockman, Zainovia

    2015-01-01

    This work reports a simple seed formation method for the hydrothermal growth of tungsten oxide (WO 3 ) nanorods. A WO 3 seed layer was prepared by thermal oxidation, where a W-sputtered substrate was heated and oxidized in a furnace. Oxidation temperatures and periods were varied at 400–550 °C and 5–60 min, respectively, to determine an appropriate seed layer for nanorod growth. Thermal oxidation at 500 °C for 15 min was found to produce a seed layer with sufficient crystallinity and good adhesion to the substrate. These properties prevented the seed from peeling off during the hydrothermal process, thereby allowing nanorod growth on the seed. The nanorod film showed better electrochromic behavior (higher current density of − 1.11 and + 0.65 mA cm −2 ) than compact film (lower current density of − 0.54 and + 0.28 mA cm −2 ). - Highlights: • A simple seed formation method (thermal oxidation) on sputtered W film is reported. • Crystalline seed with good adhesion to substrate is required for nanorod growth. • The appropriate temperature and period for seed formation were 500 °C and 15 min. • WO 3 nanorods exhibited higher electrochromic current density than WO 3 compact film.

  20. The role of the substrate surface morphology and water in growth of vertically aligned single-walled carbon nanotubes.

    Science.gov (United States)

    Pint, Cary; Pheasant, Sean; Nicholas, Nolan; Horton, Charles; Hauge, Robert

    2008-11-01

    Growth of high quality, vertically aligned single-walled carbon nanotubes (carpets) is achieved using a rapid insertion hot filament chemical vapor deposition (HF-CVD) technique. The effect of the substrate morphology on growth is explored by comparing carpets grown on epitaxially polished MgO substrates to those grown on "as-cut", macroscopically rough MgO substrates. Depending on the substrate morphology, we observe differences in both the overall carpet morphology as well as the diameter distribution of nanotubes grown in the carpet based on optical measurements. In addition, we explore the role of water in the growth of carpets on MgO and the conventional Al2O3 coated Si substrates. We find that the addition of a small amount of water is beneficial to the growth rates of the SWNT carpets, enhancing the growth rates by up to eight times.

  1. Direct growth of cerium oxide nanorods on diverse substrates for superhydrophobicity and corrosion resistance

    Science.gov (United States)

    Cho, Young Jun; Jang, Hanmin; Lee, Kwan-Soo; Kim, Dong Rip

    2015-06-01

    Superhydrophobic surfaces with anti-corrosion properties have attracted great interest in many industrial fields, particularly to enhance the thermal performance of offshore applications such as heat exchangers, pipelines, power plants, and platform structures. Nanostructures with hydrophobic materials have been widely utilized to realize superhydrophobicity of surfaces, and cerium oxide has been highlighted due to its good corrosion resistive and intrinsically hydrophobic properties. However, few studies of direct growth of cerium oxide nanostructures on diverse substrates have been reported. Herein we report a facile hydrothermal method to directly grow cerium oxide nanorods on diverse substrates, such as aluminum alloy, stainless steel, titanium, and silicon. Diverse substrates with cerium oxide nanorods exhibited superhydrophobicity with no hydrophobic modifiers on their surfaces, and showed good corrosion resistive properties in corrosive medium. We believe our method could pave the way for realization of scalable and sustainable corrosion resistive superhydrophobic surfaces in many industrial fields.

  2. Homo-epitaxial diamond film growth on ion implanted diamond substrates

    Energy Technology Data Exchange (ETDEWEB)

    Weiser, P.S.; Prawer, S.; Nugent, K.W.; Bettiol, A.A.; Kostidis, L.I.; Jamieson, D.N. [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1996-12-31

    The nucleation of CVD diamond is a complicated process, governed by many interrelated parameters. In the present work we attempt to elucidate the effect of strain on the growth of a homo-epitaxial CVD diamond. We have employed laterally confined high dose (MeV) Helium ion implantation to produce surface swelling of the substrate. The strain is enhanced by the lateral confinement of the implanted region to squares of 100 x 100 {mu}m{sup 2}. After ion implantation, micro-Raman spectroscopy was employed to map the surface strain. The substrates were then inserted into a CVD reactor and a CVD diamond film was grown upon them. Since the strained regions were laterally confined, it was then possible to monitor the effect of strain on diamond nucleation. The substrates were also analysed using Rutherford Backscattering Spectroscopy (RBS), Proton induced X-ray Emission (PIXE) and Ion Beam induced Luminescence (IBIL). 7 refs., 5 figs.

  3. Diamond film growth with modification properties of adhesion between substrate and diamond film

    Directory of Open Access Journals (Sweden)

    Setasuwon P.

    2004-03-01

    Full Text Available Diamond film growth was studied using chemical vapor deposition (CVD. A special equipment was build in-house, employing a welding torch, and substrate holder with a water-cooling system. Acetylene and oxygen were used as combustion gases and the substrate was tungsten carbide cobalt. It was found that surface treatments, such as diamond powder scratching or acid etching, increase the adhesion and prevent the film peel-off. Diamond powder scratching and combined diamond powder scratching with acid etching gave the similar diamond film structure with small grain and slightly rough surface. The diamond film obtained with both treatments has high adhesion and can withstand internal stress better than ones obtained by untreated surface or acid etching alone. It was also found that higher substrate temperature produced smoother surface and more uniform diamond grain.

  4. Heteroepitaxial Growth of Ferromagnetic MnSb(0001) Films on Ge/Si(111) Virtual Substrates.

    Science.gov (United States)

    Burrows, Christopher W; Dobbie, Andrew; Myronov, Maksym; Hase, Thomas P A; Wilkins, Stuart B; Walker, Marc; Mudd, James J; Maskery, Ian; Lees, Martin R; McConville, Christopher F; Leadley, David R; Bell, Gavin R

    2013-11-06

    Molecular beam epitaxial growth of ferromagnetic MnSb(0001) has been achieved on high quality, fully relaxed Ge(111)/Si(111) virtual substrates grown by reduced pressure chemical vapor deposition. The epilayers were characterized using reflection high energy electron diffraction, synchrotron hard X-ray diffraction, X-ray photoemission spectroscopy, and magnetometry. The surface reconstructions, magnetic properties, crystalline quality, and strain relaxation behavior of the MnSb films are similar to those of MnSb grown on GaAs(111). In contrast to GaAs substrates, segregation of substrate atoms through the MnSb film does not occur, and alternative polymorphs of MnSb are absent.

  5. Homo-epitaxial diamond film growth on ion implanted diamond substrates

    Energy Technology Data Exchange (ETDEWEB)

    Weiser, P S; Prawer, S; Nugent, K W; Bettiol, A A; Kostidis, L I; Jamieson, D N [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1997-12-31

    The nucleation of CVD diamond is a complicated process, governed by many interrelated parameters. In the present work we attempt to elucidate the effect of strain on the growth of a homo-epitaxial CVD diamond. We have employed laterally confined high dose (MeV) Helium ion implantation to produce surface swelling of the substrate. The strain is enhanced by the lateral confinement of the implanted region to squares of 100 x 100 {mu}m{sup 2}. After ion implantation, micro-Raman spectroscopy was employed to map the surface strain. The substrates were then inserted into a CVD reactor and a CVD diamond film was grown upon them. Since the strained regions were laterally confined, it was then possible to monitor the effect of strain on diamond nucleation. The substrates were also analysed using Rutherford Backscattering Spectroscopy (RBS), Proton induced X-ray Emission (PIXE) and Ion Beam induced Luminescence (IBIL). 7 refs., 5 figs.

  6. Homo-epitaxial diamond film growth on ion implanted diamond substrates

    International Nuclear Information System (INIS)

    Weiser, P.S.; Prawer, S.; Nugent, K.W.; Bettiol, A.A.; Kostidis, L.I.; Jamieson, D.N.

    1996-01-01

    The nucleation of CVD diamond is a complicated process, governed by many interrelated parameters. In the present work we attempt to elucidate the effect of strain on the growth of a homo-epitaxial CVD diamond. We have employed laterally confined high dose (MeV) Helium ion implantation to produce surface swelling of the substrate. The strain is enhanced by the lateral confinement of the implanted region to squares of 100 x 100 μm 2 . After ion implantation, micro-Raman spectroscopy was employed to map the surface strain. The substrates were then inserted into a CVD reactor and a CVD diamond film was grown upon them. Since the strained regions were laterally confined, it was then possible to monitor the effect of strain on diamond nucleation. The substrates were also analysed using Rutherford Backscattering Spectroscopy (RBS), Proton induced X-ray Emission (PIXE) and Ion Beam induced Luminescence (IBIL). 7 refs., 5 figs

  7. Bacterial growth and substrate degradation by BTX-oxidizing culture in response to salt stress.

    Science.gov (United States)

    Lee, Chi-Yuan; Lin, Ching-Hsing

    2006-01-01

    Interactions between microbial growth and substrate degradation are important in determining the performance of trickle-bed bioreactors (TBB), especially when salt is added to reduce biomass formation in order to alleviate media clogging. This study was aimed at quantifying salinity effects on bacterial growth and substrate degradation, and at acquiring kinetic information in order to improve the design and operation of TBB. Experiment works began by cultivating a mixed culture in a chemostat reactor receiving artificial influent containing a mixture of benzene, toluene, and xylene (BTX), followed by using the enrichment culture to degrade the individual BTX substrates under a particular salinity, which ranged 0-50 g l(-1) in batch mode. Then, the measured concentrations of biomass and residual substrate versus time were analyzed with the microbial kinetics; moreover, the obtained microbial kinetic constants under various salinities were modeled using noncompetitive inhibition kinetics. For the three substrates the observed bacterial yields appeared to be decreased from 0.51-0.74 to 0.20-0.22 mg mg(-1) and the maximum specific rate of substrate utilization, q, declined from 0.25-0.42 to 0.07-0.11 h(-1), as the salinity increased from 0 to 50 NaCl g l(-1). The NaCl acted as noncompetitive inhibitor, where the modeling inhibitions of the coefficients, K ( T(S)), were 22.7-29.7 g l(-1) for substrate degradation and K ( T(mu)), 13.0-19.0 g l(-1), for biomass formation. The calculated ratios for the bacterial maintenance rate, m (S), to q, further indicated that the percentage energy spent on maintenance increased from 19-24 to 86-91% as salinity level increased from 0 to 50 g l(-1). These results revealed that the bacterial growth was more inhibited than substrate degradation by the BTX oxidizers under the tested salinity levels. The findings from this study demonstrate the potential of applying NaCl salt to control excessive biomass formation in biotrickling filters.

  8. EFFECT OF PLANT EXTRACTS AND GROWTH SUBSTRATES ON CONTROLLING DAMPING-OFF IN PINUS TECUNUMANII SEEDLINGS

    Directory of Open Access Journals (Sweden)

    Maria Alejandra Fajardo-Mejía

    2016-09-01

    Full Text Available Damping-off is considered one of the most limiting phytosanitary problems in conifer seedling production because it may cause massive damage or total plant death in short time periods. This pathology is caused by a complex of microorganisms, the most common of which are Fusarium spp. and Rhizoctonia spp. This study evaluated the effect of growth substrates and plant extracts at different concentrations on germination and incidence of disease in Pinus tecunumanii plants. The plants were inoculated with the damping-off pathogen Fusarium oxysporum and treatments were applied in a completely randomized design with a factorial arrangement of 4x2x3. This corresponded to four substrates (pine bark, rice hull, coconut husk and sandy soil (4:1; two plant extracts (Matricaria chamomilla and Datura stramonium, andthree concentrations of each extract (Control concentration: 0%, Concentration 1: 50 % and Concentration 2: Undiluted. Each treatment had three repetitions, with 25 plants per repetition. The growth substrates affected germination; the most effective of these were sandy soil (4:1 and pine bark, with 90% and 92% germination at day 20, respectively. No significant difference was observed between the germination obtained with these substrates and that obtained with coconut husk after day 19. Meanwhile, all of the extracts had a significant effect on controlling the disease when they were combined with the substrates, with the exception of coconut husk. With this last substrate the incidence of disease was lower than 4% without the application of plant extracts; this indicates that coconut husk discourages the development of the disease on its own.

  9. Growth of broad-nosed caiman, Caiman latirostris (Daudin, 1802 hatchlings, fed with diets of animal origin

    Directory of Open Access Journals (Sweden)

    M. S. PINHEIRO

    Full Text Available The study was carried out to evaluate the growth rate of broad-nosed caiman, Caiman latirostris hatchlings, fed on four animal protein diets: (a dead poultry from a poultry farm; (b dead piglet from nursery and farrowing house in a swine farm; (c whole tilapia (Tilapia rendalli e Oreochromis niloticus; and (d a balanced mixture of a, b, and c sources. Sixteen seven-month old caimans, average weight of 208 g and, 38 cm of total lenght (TL were distributed in four treatments. Four groups of four caimans each were placed in cement enclosures inside a greenhouse. Diets were supplied at the average rate of 97.8% ± 34.8% of the body weight per week (average and standard deviation; wet weight basis. Body mass and total length of caimans were measured every 30 days for six months (Nov. 1995-April. 1996. An analysis of variance with repeated measures was performed. Diets provided suitable growth for weight and TL (mean ± standard deviation, respectively: (a 2,157 ± 743 g and 79.5 ± 6.9 cm; (b 1,811 ± 222 g and 75.7 ± 1.9 cm; (c 2,431 ± 780 g and 80.7 ± 5.8 cm; (d 1,683.5 ± 736 g and 74.5 ± 7.2 cm. There was no significant effect of diet on weight, but diet effect on TL of hatchlings approached significance (p < 0.10. It is concluded that all diets have good potential, in growth sense, to be used in commercial farms or ranches and for captivity propagation programs of caimans.

  10. Substrate mediated growth of organic semiconducting thin films; Templateffekte bei der Strukturierung organischer Halbleiterfilme

    Energy Technology Data Exchange (ETDEWEB)

    Goetzen, Jan

    2010-09-17

    Since electronic properties of molecular materials are closely related to their structural order a precise control of the molecular packing and crystalline orientation of thin films is of vital interest for an optimization of organic electronic devices. Of particular interest in this respect is the initial stage of film formation which is largely governed by the interplay of intermolecular and molecule-substrate interactions. One approach to control the molecular film structure is based on substrate mediated growth. In this respect we have studied structural properties of thin films of pentacene, pentacene- 5,7,12,14-tetrone and perfluoro-pentacene which were grown onto various substrates including metals, metal oxides and graphite. On metal surfaces the molecules initially form a chemisorbed monolayer where molecules even can be uniformly aligned when using appropriate substrates with twofold symmetry. Further deposition, however, is accompanied by a pronounced dewetting and formation of disjoined islands which results from a large structural mismatch between the molecular arrangement in the monolayer and the crystalline phase. In some cases it is possible to orient such islands by utilizing step mediated nucleation and decoration of step bunches which allows the preparation of azimuthally well oriented elongated islands. On single crystalline oxides the growth parallels the situation found before for SiO{sub 2} where islands of upright oriented molecules are formed. The growth on graphite is somewhat particular since the lattice provides a natural template for acenes yielding epitaxially ordered monolayer films with planar adsorption geometry like in case of metals. Interestingly, however, no dewetting occurs upon further growth and instead rather smooth films are formed. The detailed analysis for the case of pentacene showed that the substrate-molecule interaction actually is weaker than the intermolecular interaction so that multilayer films can lift the

  11. Twin-assisted growth of nominally stable substrates underneath dewetted Au nanoparticles

    International Nuclear Information System (INIS)

    Liu, Fang; Xie, Dong Yue; Majdi, Tahereh; Zhu, Guo-zhen

    2016-01-01

    By applying a simple and inexpensive thermal treatment, we synthesized supported gold-oxide nanostructures, which have potential applications to plasmonic devices and biosensors. The regrowth of nominally stable substrates under gold nanoparticles is associated with the appearance of preferential orientations of dewetted nanoparticles and the formation of atomically sharp interfacial monolayers. Steps present at the interfacial monolayer usually occur at defects including the intersection points of twin planes at the interface. They were related to the nucleation and immigration of the interfacial monolayers, prompting the substrate regrowth. Accordingly, we proposed the twin-assisted growth mechanism, which provides insight on the synthesis of gold-oxide nanostructures. - Highlights: • The twin-assisted growth mechanism is proposed for the abnormal regrowth of substrate underneath Au nanoparticles. • The substrate regrowth is related to the steps and ledges that are present at the Au–MgAl_2O_4 interfacial monolayers. • Interfacial steps are detected at defects such as the intersecting points of twin planes at the interface.

  12. Twin-assisted growth of nominally stable substrates underneath dewetted Au nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Fang; Xie, Dong Yue [State Key Laboratory of Metal Matrix Composites, School of Materials Science and Engineering, Shanghai Jiao Tong University, 800 Dongchuan Rd., Shanghai 200240 (China); Majdi, Tahereh [Department of Engineering Physics, McMaster University, 1280 Main St. W., Hamilton, ON L8S 4L7 (Canada); Zhu, Guo-zhen, E-mail: zhugz@sjtu.edu.cn [State Key Laboratory of Metal Matrix Composites, School of Materials Science and Engineering, Shanghai Jiao Tong University, 800 Dongchuan Rd., Shanghai 200240 (China)

    2016-03-15

    By applying a simple and inexpensive thermal treatment, we synthesized supported gold-oxide nanostructures, which have potential applications to plasmonic devices and biosensors. The regrowth of nominally stable substrates under gold nanoparticles is associated with the appearance of preferential orientations of dewetted nanoparticles and the formation of atomically sharp interfacial monolayers. Steps present at the interfacial monolayer usually occur at defects including the intersection points of twin planes at the interface. They were related to the nucleation and immigration of the interfacial monolayers, prompting the substrate regrowth. Accordingly, we proposed the twin-assisted growth mechanism, which provides insight on the synthesis of gold-oxide nanostructures. - Highlights: • The twin-assisted growth mechanism is proposed for the abnormal regrowth of substrate underneath Au nanoparticles. • The substrate regrowth is related to the steps and ledges that are present at the Au–MgAl{sub 2}O{sub 4} interfacial monolayers. • Interfacial steps are detected at defects such as the intersecting points of twin planes at the interface.

  13. Enhancing trichloroethylene degradation using non-aromatic compounds as growth substrates.

    Science.gov (United States)

    Kim, Seungjin; Hwang, Jeongmin; Chung, Jinwook; Bae, Wookeun

    2014-06-30

    The effect of non-aromatic compounds on the trichloroethylene (TCE) degradation of toluene-oxidizing bacteria were evaluated using Burkholderia cepacia G4 that expresses toluene 2-monooxygenase and Pseudomonas putida that expresses toluene dioxygenase. TCE degradation rates for B. cepacia G4 and P. putida with toluene alone as growth substrate were 0.144 and 0.123 μg-TCE/mg-protein h, respectively. When glucose, acetate and ethanol were fed as additional growth substrates, those values increased up to 0.196, 0.418 and 0.530 μg-TCE/mg-protein h, respectively for B. cepacia G4 and 0.319, 0.219 and 0.373 μg-TCE/mg-protein h, respectively for P. putida. In particular, the addition of ethanol resulted in a high TCE degradation rate regardless of the initial concentration. The use of a non-aromatic compound as an additional substrate probably enhanced the TCE degradation because of the additional supply of NADH that is consumed in co-metabolic degradation of TCE. Also, it is expected that the addition of a non-aromatic substrate can reduce the necessary dose of toluene and, subsequently, minimize the potential competitive inhibition upon TCE co-metabolism by toluene. Copyright © 2014 Elsevier B.V. All rights reserved.

  14. Effect of different substrates on growth of Mimosa bimucronata seedlings inoculate with rhizobium

    Directory of Open Access Journals (Sweden)

    Juliana Müller Freire

    2017-06-01

    Full Text Available The objective of this study was to evaluate the growth response of Mimosa bimucronata (DC O. Kuntze seedlings in nursery conditions to inoculation with rhizobium strains previously selected using different substrates. An experimental design of randomized blocks with split plots was used, testing three substrates (pure organic-containing clay, sand and manure in 1: 1: 1 v: v: v ratio; organomineral mixed with 30% straw and sand with vermiculite in 1: 1 v: v and four N sources (inoculation with strains BR 3461 and BR 3470, control with N fertilization and control without fertilization, totalizing 12 treatments. Height and stem diameter were evaluate after 90 days and shoot, root and nodules dry mass were evaluate after 120 days. Organomineral substrates provided better seedling growth. However, only organic-substrate with straw and sand with vermiculite showed positive responses of plants inoculated with BR3470 strain. The performance of the inoculated seedlings was not higher than that of seedlings fertilized with N. The rate of N applied stimulated nodulation rather than inhibit it.

  15. Dracaena marginata biofilter: design of growth substrate and treatment of stormwater runoff.

    Science.gov (United States)

    Vijayaraghavan, K; Praveen, R S

    2016-01-01

    The purpose of this research was to investigate the efficiency of Dracaena marginata planted biofilters to decontaminate urban runoff. A new biofilter growth substrate was prepared using low-cost and locally available materials such as red soil, fine sand, perlite, vermiculite, coco-peat and Sargassum biomass. The performance of biofilter substrate was compared with local garden soil based on physical and water quality parameters. Preliminary analyses indicated that biofilter substrate exhibited desirable characteristics such as low bulk density (1140 kg/m(3)), high water holding capacity (59.6%), air-filled porosity (7.82%) and hydraulic conductivity (965 mm/h). Four different biofilter assemblies, with vegetated and non-vegetated systems, were examined for several artificial rain events (un-spiked and metal-spiked). Results from un-spiked artificial rain events suggested that concentrations of most of the chemical components in effluent were highest at the beginning of rain events and thereafter subsided during the subsequent rain events. Biofilter growth substrate showed superior potential over garden soil to retain metal ions such as Al, Fe, Cu, Cr, Ni, Zn, Cd and Pb during metal-spiked rain events. Significant differences were also observed between non-vegetated and vegetated biofilter assemblies in runoff quality, with the latter producing better results.

  16. Growth and BZO-doping of the nanostructured YBCO thin films on buffered metal substrates

    DEFF Research Database (Denmark)

    Huhtinen, H.; Irjala, M.; Paturi, P.

    2010-01-01

    The growth of the nanostructured YBa2Cu3O6+x (YBCO) films is investigated for the first time on biaxially textured NiW substrates used in coated conductor technology. The optimization process of superconducting layers is made in wide magnetic field and temperature range in order to understand...... the vortex pinning structure and mechanism in our films prepared from nanostructured material. Structural analysis shows that growth mechanism in YBCO films grown on NiW is completely different when compared to YBCO on STO. Films on NiW are much rougher, there is huge in-plane variation of YBCO crystals...... and moreover out-of-plane long range lattice ordering is greatly reduced. Magnetic measurements demonstrate that jc in films grown on NiW is higher in high magnetic fields and low temperatures. This effect is connected to the amount of pinning centres observed in films on metal substrates which are effective...

  17. Growth and substrate consumption of Nitrobacter agilis cells immobilized in carrageenan: part 1. Dynamic modeling.

    Science.gov (United States)

    de Gooijer, C D; Wijffels, R H; Tramper, J

    1991-07-01

    The modeling of the growth of Nitrobacter agilis cell immobilized in kappa-carrageenan is presented. A detailed description is given of the modeling of internal diffusion and growth of cells in the support matrix in addition to external mass transfer resistance. The model predicts the substrate and biomass profiles in the support as well as the macroscopic oxygen consumption rate of the immobilized biocatalyst in time. The model is tested by experiments with continuously operated airlift loop reactors containing cells immobilized in kappa-carrageenan. The model describes experimental data very well. It is clearly shown that external mass transfer may not be neglected. Furthermore, a sensitivity analysis of the parameters at their values during the experiments revealed that apart from the radius of the spheres and the substrate bulk concentration, the external mass transfer resistance coefficient is the most sensitive parameter for our case.

  18. Growth of Horizonatal ZnO Nanowire Arrays on Any Substrate

    KAUST Repository

    Qin, Yong

    2008-12-04

    A general method is presented for growing laterally aligned and patterned ZnO nanowire (NW) arrays on any substrate as long as it is flat. The orientation control is achieved using the combined effect from ZnO seed layer and the catalytically inactive Cr (or Sn) layer for NW growth. The growth temperature (< 100 °C) is so low that the method can be applied to a wide range of substrates that can be inorganic, organic, single crystal, polycrystal, or amorphous. The laterally aligned ZnO NW arrays can be employed for various applications, such as gas sensor, field effect transistor, nanogenerator, and flexible electronics. © 2008 American Chemical Society.

  19. Growth of higher fungi on wheat straw and their impact on the digestibility of the substrate

    Energy Technology Data Exchange (ETDEWEB)

    Moyson, E.; Verachtert, H. (Catholic Univ. of Leuven (Belgium). Faculty of Agriculture)

    1991-12-01

    The influence of the growth of three higher fungi on the composition of wheat straw was investigated. Pleurotus pulmonarius, P. sajor-caju and Lentinus edodes grew very well on lignocellulosic substrates, breaking down a considerable amount of lignin. The initial lignin concentration of straw was halved after 12 weeks of fungal growth, doubling the enzymic digestibility. Together with lignin, the higher fungi consumed half of the amount of hemicellulose (i.e. 15%), leaving cellulose fairly intact, which should remain as an energy source for ruminants. (orig.).

  20. Growth of CNTs on Fe-Si catalyst prepared on Si and Al coated Si substrates

    International Nuclear Information System (INIS)

    Teng, F-Y; Ting, J-M; Sharma, Sahendra P; Liao, Kun-Hou

    2008-01-01

    In this paper we report the effect of Al interlayers on the growth characteristics of carbon nanotubes (CNTs) using as-deposited and plasma etched Fe-Si catalyst films as the catalysts. Al interlayers having various thicknesses ranging from 2 to 42 nm were deposited on Si substrates prior to the deposition of Fe-Si catalysts. It was found that the Al interlayer diffuses into the Fe-Si catalyst during the plasma etching prior to the CNT growth, leading to the swelling and amorphization of the catalyst. This allows enhanced carbon diffusion in the catalyst and therefore a faster growth rate of the resulting CNTs. It was also found that use of an Al interlayer having a thickness of ∼3 ± 1 nm is most effective. Due to the effectiveness of this, the normally required catalyst etching is no longer needed for the growth of CNTs

  1. Growth of CNTs on Fe-Si catalyst prepared on Si and Al coated Si substrates.

    Science.gov (United States)

    Teng, F-Y; Ting, Jyh-Ming; Sharma, Sahendra P; Liao, Kun-Hou

    2008-03-05

    In this paper we report the effect of Al interlayers on the growth characteristics of carbon nanotubes (CNTs) using as-deposited and plasma etched Fe-Si catalyst films as the catalysts. Al interlayers having various thicknesses ranging from 2 to 42 nm were deposited on Si substrates prior to the deposition of Fe-Si catalysts. It was found that the Al interlayer diffuses into the Fe-Si catalyst during the plasma etching prior to the CNT growth, leading to the swelling and amorphization of the catalyst. This allows enhanced carbon diffusion in the catalyst and therefore a faster growth rate of the resulting CNTs. It was also found that use of an Al interlayer having a thickness of ∼3 ± 1 nm is most effective. Due to the effectiveness of this, the normally required catalyst etching is no longer needed for the growth of CNTs.

  2. MOVPE growth of violet GaN LEDs on β-Ga2O3 substrates

    Science.gov (United States)

    Li, Ding; Hoffmann, Veit; Richter, Eberhard; Tessaro, Thomas; Galazka, Zbigniew; Weyers, Markus; Tränkle, Günther

    2017-11-01

    We report that a H2-free atmosphere is essential for the initial stage of metalorganic vapour phase epitaxy (MOVPE) growth of GaN on β-Ga2O3 to prevent the surface from damage. A simple growth method is proposed that can easily transfer established GaN growth recipes from sapphire to β-Ga2O3 with both (-2 0 1) and (1 0 0) orientations. This method features a thin AlN nucleation layer grown below 900 °C in N2 atmosphere to protect the surface of β-Ga2O3 from deterioration during further growth under the H2 atmosphere. Based on this, we demonstrate working violet vertical light emitting diodes (VLEDs) on n-conductive β-Ga2O3 substrates.

  3. Growth and properties of ZnO films on polymeric substrate by spray pyrolysis method

    Energy Technology Data Exchange (ETDEWEB)

    Kriisa, Merike; Kärber, Erki [Department of Materials Science, Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn (Estonia); Krunks, Malle, E-mail: malle.krunks@ttu.ee [Department of Materials Science, Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn (Estonia); Mikli, Valdek [Centre for Materials Research, Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn (Estonia); Unt, Tarmo; Kukk, Mart; Mere, Arvo [Department of Materials Science, Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn (Estonia)

    2014-03-31

    The growth of ZnO layers deposited by spray pyrolysis on polymeric substrate was studied. Zinc acetate precursor solution was sprayed onto preheated polyimide (PI) and glass reference substrates at 380 °C. The structural, morphological, optical and electrical properties of the layers were measured by X-ray diffraction, scanning electron microscopy, optical spectroscopy and van der Pauw and Hall method. ZnO:In layers could be grown on PI when deposited onto undoped ZnO layer acting as a buffer layer on PI. Independent of the substrate type, the ZnO/ZnO:In bilayer showed a mixed morphology from smooth canvas-like surface to large scrolled belt grains dependent on buffer layer morphology. Due to the formation of scrolled belts, the ZnO:In layer shows no preferential orientation, yet the preferred orientation of the ZnO buffer crystallites is (100) plane parallel to the substrate. The bilayers deposited on PI exhibit high light scattering capability (haze factor of 85–95% in the spectral region of 350–1500 nm). The resistivity of the ZnO:In film in bilayer on PI is 4.4 × 10{sup −2} Ω cm mainly due to low carrier mobility of 1.5 cm{sup 2}/Vs, the carrier concentration is 10{sup 20} cm{sup −3}. - Highlights: • ZnO:In layers were grown on polyimide substrate by spray pyrolysis. • The buffer layer morphology is controlled by the layer thickness and spray rate. • ZnO/ZnO:In bilayer morphology is dependent on the surface of buffer layer. • Rough buffer layer leads to rough bilayer with scrolled belts (diameter of 2–6 μm). • Due to scrolled belts layers show no preferential growth yet highly scatter light.

  4. Multilayer graphene growth on polar dielectric substrates using chemical vapour deposition

    Science.gov (United States)

    Karamat, S.; Çelik, K.; Shah Zaman, S.; Oral, A.

    2018-06-01

    High quality of graphene is necessary for its applications at industrial scale production. The most convenient way is its direct growth on dielectrics which avoid the transfer route of graphene from metal to dielectric substrate usually followed by graphene community. The choice of a suitable dielectric for the gate material which can replace silicon dioxide (SiO2) is in high demand. Various properties like permittivity, thermodynamic stability, film morphology, interface quality, bandgap and band alignment of other dielectrics with graphene needs more exploration. A potential dielectric material is required which could be used to grow graphene with all these qualities. Direct growth of graphene on magnesium oxide (MgO) substrates is an interesting idea and will be a new addition in the library of 2D materials. The present work is about the direct growth of graphene on MgO substrates by an ambient pressure chemical vapour deposition (CVD) method. We address the surface instability issue of the polar oxides which is the most challenging factor in MgO. Atomic force microscopy (AFM) measurements showed the topographical features of the graphene coated on MgO. X-ray photoelectron spectroscopy (XPS) study is carried out to extract information regarding the presence of necessary elements, their bonding with substrates and to confirm the sp-2 hybridization of carbon, which is a characteristic feature of graphene film. The chemical shift is due to the surface reconstruction of MgO in the prepared samples. For graphene-MgO interface, valence band offset (VBO) and conduction band offset (CBO) extracted from valence band spectra reported. Further, we predicted the energy band diagram for single layer and thin film of graphene. By using the room-temperature energy band gap values of MgO and graphene, the CBO is calculated to be 6.85 eV for single layer and 5.66 eV for few layer (1-3) of graphene layers.

  5. Effects of substrate misorientation and growth rate on ordering in GaInP

    Science.gov (United States)

    Su, L. C.; Ho, I. H.; Stringfellow, G. B.

    1994-05-01

    Epitaxial layers of GaxIn1-xP with x≊0.52 have been grown by organometallic vapor-phase epitaxy on GaAs substrates misoriented from the (001) plane in the [1¯10] direction by angles ϑm, of 0°, 3°, 6°, and 9°. For each substrate orientation growth rates rg of 1, 2, and 4 μm/h have been used. The ordering was characterized using transmission electron diffraction (TED), dark-field imaging, and photoluminescence. The (110) cross-sectional images show domains of the Cu-Pt structure separated by antiphase boundaries (APBs). The domain size and shape and the degree of order are found to be strongly affected by both the substrate misorientation and the growth rate. For example, lateral domain dimensions range from 50 Å for layers grown with rg=4 μm/h and ϑm=0° to 2500 Å for rg=1 μm/h and ϑm=9°. The APBs generally propagate from the substrate/epilayer interface to the top surface at an angle to the (001) plane that increases dramatically as the angle of misorientation increases. The angle is nearly independent of growth rate. From the superspot intensities in the TED patterns, the degree of order appears to be a maximum for ϑm≊5°. Judging from the reduction in photoluminescence peak energy caused by ordering, the maximum degree of order appears to occur at ϑm≊4°.

  6. Substrate in the emergence and initial growth of seedlings of Caesalpinia pulcherrima

    Directory of Open Access Journals (Sweden)

    Magnólia Martins Alves

    Full Text Available ABSTRACT: Caesalpinia pulcherrima is an exotic species belongs to the Fabaceae family commonly known as flamboyant-mirim, and widely used for urban forestry. This study aimed to evaluate the effect of different substrates on the emergence and early seedlings growth of C. pulcherrima . The experiment was conducted in a greenhouse belonging to the Centro de Ciências Agrárias, Universidade Federal da Paraíba. The experimental design was completely randomized and treatments had 14 substrates: sand, vegetable soil, vermiculite, wood dust, carbonized rice straw, vegetable soil + sand 1:1, sand + wood dust 1:1, sand + carbonized rice straw 1:1, earth + wood dust 1:1, vegetable soil + carbonized rice straw 1:1, vermiculite + sand 1:1, vermiculite + wood dust 1:1, vermiculite + earth 1:1 and vermiculite + carbonized rice straw 1:1. Evaluation of the effect of the treatments was through the following determinations: percentage of emergency, first count, index of germination speed, length and dry weight of roots and shoots. The vermiculite, vegetable soil + sand 1:1, vermiculite + sand 1:1, vermiculite + saw dust 1:1, are suitable for emergence and early growth of seedlings of Caesalpinia pulcherrima . Substrates saw dust and carbonized rice straw were responsible for the worst performers on emergence and seedling development.

  7. Growth and yield performance of Pleurotus ostreatus (Jacq. Fr.) Kumm (oyster mushroom) on different substrates.

    Science.gov (United States)

    Girmay, Zenebe; Gorems, Weldesemayat; Birhanu, Getachew; Zewdie, Solomon

    2016-12-01

    Mushroom cultivation is reported as an economically viable bio-technology process for conversion of various lignocellulosic wastes. Given the lack of technology know-how on the cultivation of mushroom, this study was conducted in Wondo Genet College of Forestry and Natural Resource, with the aim to assess the suitability of selected substrates (agricultural and/or forest wastes) for oyster mushroom cultivation. Accordingly, four substrates (cotton seed, paper waste, wheat straw, and sawdust) were tested for their efficacy in oyster mushroom production. Pure culture of oyster mushroom was obtained from Mycology laboratory, Department of Plant Biology and Biodiversity Management, Addis Ababa University. The pure culture was inoculated on potato dextrose agar for spawn preparation. Then, the spawn containing sorghum was inoculated with the fungal culture for the formation of fruiting bodies on the agricultural wastes. The oyster mushroom cultivation was undertaken under aseptic conditions, and the growth and development of mushroom were monitored daily. Results of the study revealed that oyster mushroom can grow on cotton seed, paper waste, sawdust and wheat straw, with varying growth performances. The highest biological and economic yield, as well as the highest percentage of biological efficiency of oyster mushroom was obtained from cotton seed, while the least was from sawdust. The study recommends cotton seed, followed by paper waste as suitable substrates for the cultivation of oyster mushroom. It also suggests that there is a need for further investigation on various aspects of oyster mushroom cultivation in Ethiopia to promote the industry.

  8. Halo(natronoarchaea isolated from hypersaline lakes utilize cellulose and chitin as growth substrates

    Directory of Open Access Journals (Sweden)

    Dimitry Y Sorokin

    2015-09-01

    Full Text Available Until recently, extremely halophilic euryarchaeota were considered mostly as aerobic heterotrophs utilizing simple organic compounds as growth substrates. Almost nothing is known on the ability of these prokaryotes to utilize complex polysaccharides as cellulose, xylan and chitin. Although few haloarchaeal cellulases and chitinases were recently characterized, the analysis of currently available haloarchaeal genomes deciphered numerous genes encoding glycosidases (GHs of various families including endoglucanases and chitinases. However, all these haloarchaea were isolated and cultivated on simple substrates and their ability to grow on polysaccharides in situ or in vitro is unknown. This study examines several halo(natronoarchaeal strains from geographically distant hypersaline lakes for the ability to grow on insoluble polymers as a sole growth substrate in salt-saturated mineral media. Some of them belonged to known taxa, while other represented novel phylogenetic lineages within the class Halobacteria. All isolates produced extracellular extremely salt tolerant cellulases or chitinases, either cell-free or cell-bound. Obtained results demonstrate a presence of diverse population of haloarchaeal cellulo/chitinotrophs in hypersaline habitats indicating that euryarchaea participate in aerobic mineralization of recalcitrant organic polymers in salt-saturated environments.

  9. Substrate engineering for Ni-assisted growth of carbon nano-tubes

    Energy Technology Data Exchange (ETDEWEB)

    Kolahdouz, Z.; Kolahdouz, M. [Department of Electrical and Computer Engineering, Nano-electronic Laboratory, University of Tehran, Tehran (Iran, Islamic Republic of); Ghanbari, H. [Tarbiat Modarres University, Tehran (Iran, Islamic Republic of); Mohajerzadeh, S. [Department of Electrical and Computer Engineering, Nano-electronic Laboratory, University of Tehran, Tehran (Iran, Islamic Republic of); Naureen, S. [School of Information and Communication Technology, KTH (Royal Institute of Technology) Kista (Sweden); Radamson, H.H., E-mail: rad@kth.se [School of Information and Communication Technology, KTH (Royal Institute of Technology) Kista (Sweden)

    2012-10-01

    The growth of carbon multi-walled nano-tubes (MWCNTs) using metal catalyst (e.g. Ni, Co, and Fe) has been extensively investigated during the last decade. In general, the physical properties of CNTs depend on the type, quality and diameter of the tubes. One of the parameters which affects the diameter of a MWCNT is the size of the catalyst metal islands. Considering Ni as the metal catalyst, the formed silicide layer agglomerates (island formation) after a thermal treatment. One way to decrease the size of Ni islands is to apply SiGe as the base for the growth. In this study, different methods based on substrate engineering are proposed to change/control the MWCNT diameters. These include (i) well-controlled oxide openings containing Ni to miniaturize the metal island size, and (ii) growth on strained or partially relaxed SiGe layers for smaller Ni silicide islands.

  10. Effects of substrate type on growth and mortality of blue mussels ( Mytilus edulis ) exposed to the predator Carcinus maenas

    DEFF Research Database (Denmark)

    Frandsen, Rikke; Dolmer, Per

    2002-01-01

    Structure and complexity of the substrate are important habitat characteristics for benthic epifauna. The specific growth and mortality rates and inducible defence characters on medium- sized blue mussels (Mytilus edulis L.) exposed to shore crabs (Carcinus maenas L.) were examined on three...... different substrate types in combined field and laboratory experiments. The experiments showed that complexity of the substrate increased blue mussel survival significantly, through a decrease in predation pressure. However, increased intraspecific competition for food on the complex substrate resulted...... in significantly lower growth rates of the mussels. Inducible defence characters were also influenced by substrate type. Blue mussels were more affected by predators on the structurally simple substrate, where they developed thicker shells and a larger posterior adductor muscle....

  11. Dual inoculation with an Aarbuscular Mycorrhizal fungus and Rhizobium to facilitate the growth of alfalfa on coal mine substrates

    Energy Technology Data Exchange (ETDEWEB)

    Wu, F.Y.; Bi, Y.L.; Wong, M.H. [China University of Mining & Technology, Beijing (China)

    2009-07-01

    A pot experiment was conducted to investigate the effects of Glomus mosseae and Rhizobium on Medicago sativa grown on three types of coal mine substrates, namely a mixture of coal wastes and sands (CS), coal wastes and fly ash (CF), and fly ash (FA). Inoculation with Rhizobium alone did not result in any growth response but G. mosseae alone displayed a significant effect on plant growth. G. mosseae markedly increased the survival rate of M. sativa in CS substrate. In CF and FA substrates the respective oven dry weights of M. sativa inoculated with G. mosseae were 1.8 and 5.1 times higher than those without inoculation. Based on nitrogen (N), phosphorus (P) and potassium (K) uptake and legume growth, the results also show that dual inoculation in CS and CF substrates elicited a synergistic effect. This indicates that inoculation with arbuscular mycorrhizal (AM) fungi may be a promising approach for revegetation of coal mine substrates.

  12. Room temperature growth of biaxially aligned yttria-stabilized zirconia films on glass substrates by pulsed-laser deposition

    CERN Document Server

    Li Peng; Mazumder, J

    2003-01-01

    Room temperature deposition of biaxially textured yttria-stabilized zirconia (YSZ) films on amorphous glass substrates was successfully achieved by conventional pulsed-laser deposition. The influence of the surrounding gases, their pressure and the deposition time on the structure of the films was studied. A columnar growth process was revealed based on the experimental results. The grown biaxial texture appears as a kind of substrate independence, which makes it possible to fabricate in-plane aligned YSZ films on various substrates.

  13. Substrate structure dependence of the growth modes of p-quaterphenyl thin films on gold

    International Nuclear Information System (INIS)

    Muellegger, S.; Mitsche, S.; Poelt, P.; Haenel, K.; Birkner, A.; Woell, C.; Winkler, A.

    2005-01-01

    The variably oriented crystallite surfaces of a recrystallized polycrystalline gold sample served as substrates for the investigation of the structure dependence of p-quaterphenyl (4P) thin film growth. The films were prepared in ultrahigh vacuum by organic molecular beam evaporation. Optical microscopy, scanning electron microscopy, combined with laterally resolved electron backscatter diffraction and scanning tunnelling microscopy have been applied to determine the correlation between the substrate surface structure and 4P film morphology. Crystallite surfaces consisting of (110) terraces favour highly anisotropic needle-like 4P growth with the needle orientation normal to the Au directions. Atomic steps on vicinal planes with narrow terraces (< 2 nm) can also induce anisotropy in the 4P thin film growth, in particular elongated 4P islands normal to the step direction. In contrast to that, a nearly isotropic distribution of the needle orientations is observed on Au grains terminated by highly symmetric (111) or (100) crystal planes. Additionally, patches of continuous 4P layers can be found on these surfaces. There is strong evidence that the 4P molecules within the needle-like crystallites are oriented parallel to the Au surface, whereas for the continuous layers the 4P molecules are oriented nearly upright on the surface

  14. Rayleigh-Taylor instability under curved substrates: An optimal transient growth analysis

    Science.gov (United States)

    Balestra, Gioele; Brun, P.-T.; Gallaire, François

    2016-12-01

    We investigate the stability of thin viscous films coated on the inside of a horizontal cylindrical substrate. In such a case, gravity acts both as a stabilizing force through the progressive drainage of the film and as a destabilizing force prone to form droplets via the Rayleigh-Taylor instability. The drainage solution, derived from lubrication equations, is found asymptotically stable with respect to infinitesimally small perturbations, although in reality, droplets often form. To resolve this paradox, we perform an optimal transient growth analysis for the first-order perturbations of the liquid's interface, generalizing the results of Trinh et al. [Phys. Fluids 26, 051704 (2014), 10.1063/1.4876476]. We find that the system displays a linear transient growth potential that gives rise to two different scenarios depending on the value of the Bond number (prescribing the relative importance of gravity and surface tension forces). At low Bond numbers, the optimal perturbation of the interface does not generate droplets. In contrast, for higher Bond numbers, perturbations on the upper hemicircle yield gains large enough to potentially form droplets. The gain increases exponentially with the Bond number. In particular, depending on the amplitude of the initial perturbation, we find a critical Bond number above which the short-time linear growth is sufficient to trigger the nonlinear effects required to form dripping droplets. We conclude that the transition to droplets detaching from the substrate is noise and perturbation dependent.

  15. Influence of electron beam irradiation on growth of Phytophthora cinnamomi and its control in substrates

    Science.gov (United States)

    MigdaŁ, Wojciech; Orlikowski, Leszek B.; Ptaszek, Magdalena; Gryczka, Urszula

    2012-08-01

    Very extensive production procedure, especially in plants growing under covering, require methods, which would allow quick elimination or substantial reduction of populations of specific pathogens without affecting the growth and development of the cultivated plants. Among soil-borne pathogens, the Phytophthora species are especially dangerous for horticultural plants. In this study, irradiation with electron beam was applied to control Phytophthora cinnamomi. The influence of irradiation dose on the reduction of in vitro growth and the population density of the pathogen in treated peat and its mixture with composted pine bark (1:1), as well as the health of Chamaecyparis lawsoniana and Lavandula angustifolia plants were evaluated. Application of irradiation at a dose of 1.5 kGy completely inhibited the in vitro development of P. cinnamomi. This irradiation effect was connected with the disintegration of the hyphae and spores of the species. Irradiation of peat and its mixture with composted pine bark with 10 kGy resulted in the inhibition of stem base rot development in Ch. lawsoniana. Symptoms of the disease were not observed when the substrates were treated with 15 kGy. In the case of L. angustifolia, stem root rot was not observed on cuttings transplanted to infected peat irradiated at a dose of 10 kGy. Irradiation of the horticultural substrates did not affect plant growth.

  16. Poinsettia Growth and Development Response to Container Root Substrate with Biochar

    Directory of Open Access Journals (Sweden)

    Yanjun Guo

    2018-01-01

    Full Text Available A greenhouse study was conducted to evaluate the growth and development of poinsettia ‘Prestige Red’ (Euphorbia pulcherrima grown in a commercial peat-based potting mix (Sunshine Mix #1 amended with biochar at 0%, 20%, 40%, 60%, 80%, or 100% (by volume at four different fertigation regimes: F1: 100 to 200 mg·L−1 nitrogen (N, F2: 200 to 300 mg·L−1 N (control, F3: 300 to 400 mg·L−1 N, or F4: 400 to 500 mg·L−1 N. The experiment was a two-factor factorial design with 10 replications for each combination of biochar by fertigation. As the percentage of biochar increased, root substrate pore space and bulk density increased, while container capacity decreased. Root rot and red bract necrosis only occurred in F4 combined with 100% biochar. Plants grown in 40% biochar had a similar growth and development to those in 0% biochar. Up to 80% biochar, plants exhibited no significant change, except in terms of dry weight, which decreased at higher biochar percentages (60% and 80%. In summary, at a fertigation rate of 100 mg·L−1 N to 400 mg·L−1 N, up to 80% biochar could be used as an amendment to peat-based root substrate with acceptable growth reduction and no changes in quality.

  17. Growth of InAs/InGaAs nanowires on GaAs(111)B substrates

    Energy Technology Data Exchange (ETDEWEB)

    Scholz, Sven; Schott, Ruediger; Ludwig, Arne; Wieck, Andreas D. [Lehrstuhl fuer Angewandte Festkoerperphysik, Ruhr-Universitaet Bochum (Germany); Reuter, Dirk [Arbeitsgruppe fuer optoelektronische Materialien und Bauelemente, Universitaet Paderborn (Germany)

    2013-07-01

    To investigate the structure and behavior of individual 1D-quantum structures, so called nanowires, we have grown single localized Au seeded InAs/InGaAs nanowires on GaAs(111)B substrate by molecular beam epitaxy. The Au-seeds are implanted by focused ion beam (FIB) technology. We developed a AuGa-LMIS to avoid the beam spread induced by using a Wien-Filter, which allows us to reduce the spot size of the focused ion beam and as consequence the number of implanted ions necessary to seed a wire. At present the growth of InAs nanowires is not fully understood and we have been working on optimizing the process. We identified an optimal growth temperature and arsenic to indium ratio for nanowire growth. Further investigations also aim at analyzing the influence of the growth rates and growth directions. We studied the morphology of the nanowires by SEM imaging and the optical properties with photoluminescence spectroscopy.

  18. Microbial uptake of radiolabeled substrates: estimates of growth rates from time course measurements

    International Nuclear Information System (INIS)

    Li, W.K.W.

    1984-01-01

    The uptake of [ 3 H]glucose and a mixture of 3 H-labeled amino acids was measured, in time course fashion, in planktonic microbial assemblages of the eastern tropical Pacific Ocean. The average generation times of those portions of the assemblages able to utilize these substrates were estimated from a simple exponential growth model. Other workers have independently used this model in its integrated or differential form. A mathematical verification and an experimental demonstration of the equivalence of the two approaches are presented. A study was made of the size distribution of heterotrophic activity, using time course measurements. It was found that the size distribution and the effect of sample filtration before radiolabeling were dependent on time of incubation. In principle, it was possible to ascribe these time dependences to differences in th specific growth rate and initial standing stock of the microbial assemblages. 33 references

  19. Nucleation and growth microstructural study of ti films on 304 SS substrates

    Directory of Open Access Journals (Sweden)

    Rogério de Almeida Vieira

    2004-09-01

    Full Text Available Coating of steel surfaces with titanium films has been studied with the objective to protect them against corrosion, and to create an intermediate film for CVD diamond and TiN film deposition. In this work, the nucleation, growth mechanisms and microstructural formation of the titanium films deposited on 304 stainless steel (304 SS substrate are presented and discussed. The titanium films of variable thickness were obtained by vapour phase deposition produced by electron beam. The surfaces of these samples were observed by scanning electron microscopy. The cross sections of these samples were observed by using an atomic force microscope. The Ti film-304 SS interfaces were analyzed by X-ray diffraction. The results showed that titanium films have a columnar growth. The Ti film-304 SS interface had a residual compression stress at room temperature due to the inter-diffusion process.

  20. Low temperature metal free growth of graphene on insulating substrates by plasma assisted chemical vapor deposition

    Science.gov (United States)

    Muñoz, R.; Munuera, C.; Martínez, J. I.; Azpeitia, J.; Gómez-Aleixandre, C.; García-Hernández, M.

    2017-03-01

    Direct growth of graphene films on dielectric substrates (quartz and silica) is reported, by means of remote electron cyclotron resonance plasma assisted chemical vapor deposition r-(ECR-CVD) at low temperature (650 °C). Using a two step deposition process- nucleation and growth- by changing the partial pressure of the gas precursors at constant temperature, mostly monolayer continuous films, with grain sizes up to 500 nm are grown, exhibiting transmittance larger than 92% and sheet resistance as low as 900 Ω sq-1. The grain size and nucleation density of the resulting graphene sheets can be controlled varying the deposition time and pressure. In additon, first-principles DFT-based calculations have been carried out in order to rationalize the oxygen reduction in the quartz surface experimentally observed. This method is easily scalable and avoids damaging and expensive transfer steps of graphene films, improving compatibility with current fabrication technologies.

  1. Plantago lanceolata growth and Cr uptake after mycorrhizal inoculation in a Cr amended substrate

    Directory of Open Access Journals (Sweden)

    Amaia Nogales

    2012-03-01

    Full Text Available Arbuscular mycorrhizal fungi from two chromium contaminated sites, one with 275 mg kg-1 of Cr (zone A and the other with 550 mg kg-1 Cr (zone B, were multiplied and tentatively identified. The effect of both fungal consortia on Plantago lanceolata plant growth in a substrate amended with 200 mg kg-1 of Cr and with 400 mg kg-1 Cr was assessed and compared with the growth of plants inoculated with Glomus intraradices BEG72. Only the plants inoculated with G. intraradices BEG72 and with the fungal consortia obtained from the area with a high Cr contamination (zone B grew in the soil with 400 mg kg-1 of Cr. The consortia of fungi from zone B, decreased the plant’s uptake/translocation of the heavy metal compared with G. intraradices BEG72. These results underscore the differential effect of AM fungi in conferring bioprotection in Cr contaminated soils.

  2. Growth and characterization of straight InAs/GaAs nanowire heterostructures on Si substrate

    International Nuclear Information System (INIS)

    Yan Xin; Zhang Xia; Li Jun-Shuai; Lü Xiao-Long; Ren Xiao-Min; Huang Yong-Qing

    2013-01-01

    Vertical InAs/GaAs nanowire (NW) heterostructures with a straight InAs segment have been successfully fabricated on Si (111) substrate by using AlGaAs/GaAs buffer layers coupled with a composition grading InGaAs segment. Both the GaAs and InAs segments are not limited by the misfit strain induced critical diameter. The low growth rate of InAs NWs is attributed to the AlGaAs/GaAs buffer layers which dramatically decrease the adatom diffusion contribution to the InAs NW growth. The crystal structure of InAs NW can be tuned from zincblende to wurtzite by controlling its diameter as well as the length of GaAs NWs. This work helps to open up a road for the integration of high-quality III-V NW heterostructures with Si

  3. Effects of Precursor-Substrate Distances on the Growth of GaN Nanowires

    Directory of Open Access Journals (Sweden)

    Hongbin Cheng

    2015-01-01

    Full Text Available GaN nanowires were synthesized through the Ni-catalyzed chemical vapor deposition (CVD method using Ga2O3/GaN mixtures as gallium sources, and precursor-substrate distances were investigated as the important factor for the growth of GaN nanowires. The microstructure, composition, and photoluminescence property were characterized by X-ray diffraction, field emission scanning electron microscopy, high-resolution transmission electron microscopy, and photoluminescence spectra. The results showed that single crystalline GaN nanowires with the diameter of about 90 nm and the length up to tens of micrometers had been grown thickly across Si (100 substrates with uniform density. Moreover, the variations of the GaN nanowire morphology, density, and size were largely attributed to substrate positions which would influence Ga precursor density in the carrier gas, the saturation degree of gaseous reactants, and the catalyst activity, respectively, in the fabrication of GaN nanowires by the vapour liquid solid mechanism.

  4. Correlation between substrate bias, growth process and structural properties of phosphorus incorporated tetrahedral amorphous carbon films

    International Nuclear Information System (INIS)

    Liu Aiping; Zhu Jiaqi; Han Jiecai; Wu Huaping; Jia Zechun

    2007-01-01

    We investigate the growth process and structural properties of phosphorus incorporated tetrahedral amorphous carbon (ta-C:P) films which are deposited at different substrate biases by filtered cathodic vacuum arc technique with PH 3 as the dopant source. The films are characterized by X-ray photoelectron spectroscopy (XPS), atomic force microscopy, Raman spectroscopy, residual stress measurement, UV/VIS/NIR absorption spectroscopy and temperature-dependent conductivity measurement. The atomic fraction of phosphorus in the films as a function of substrate bias is obtained by XPS analysis. The optimum bias for phosphorus incorporation is about -80 V. Raman spectra show that the amorphous structures of all samples with atomic-scaled smooth surface are not remarkably changed when PH 3 is implanted, but some small graphitic crystallites are formed. Moreover, phosphorus impurities and higher-energetic impinging ions are favorable for the clustering of sp 2 sites dispersed in sp 3 skeleton and increase the level of structural ordering for ta-C:P films, which further releases the compressive stress and enhances the conductivity of the films. Our analysis establishes an interrelationship between microstructure, stress state, electrical properties, and substrate bias, which helps to understand the deposition mechanism of ta-C:P films

  5. Influence of electron beam irradiation on growth of Phytophthora cinnamomi and its control in substrates

    International Nuclear Information System (INIS)

    MigdaŁ, Wojciech; Orlikowski, Leszek B.; Ptaszek, Magdalena; Gryczka, Urszula

    2012-01-01

    Very extensive production procedure, especially in plants growing under covering, require methods, which would allow quick elimination or substantial reduction of populations of specific pathogens without affecting the growth and development of the cultivated plants. Among soil-borne pathogens, the Phytophthora species are especially dangerous for horticultural plants. In this study, irradiation with electron beam was applied to control Phytophthora cinnamomi. The influence of irradiation dose on the reduction of in vitro growth and the population density of the pathogen in treated peat and its mixture with composted pine bark (1:1), as well as the health of Chamaecyparis lawsoniana and Lavandula angustifolia plants were evaluated. Application of irradiation at a dose of 1.5 kGy completely inhibited the in vitro development of P. cinnamomi. This irradiation effect was connected with the disintegration of the hyphae and spores of the species. Irradiation of peat and its mixture with composted pine bark with 10 kGy resulted in the inhibition of stem base rot development in Ch. lawsoniana. Symptoms of the disease were not observed when the substrates were treated with 15 kGy. In the case of L. angustifolia, stem root rot was not observed on cuttings transplanted to infected peat irradiated at a dose of 10 kGy. Irradiation of the horticultural substrates did not affect plant growth. - Highlights: ► Electron beam irradiation is effective against soil-borne pathogens. ► Application of irradiation at dose 1.5 kGy completely inhibited in vitro development of Phytophthora cinnamomi. ► Irradiation of horticultural substrata did not influence the growth of plants.

  6. Epitaxial growth of ZnO layers on (111) GaAs substrates by laser molecular beam epitaxy

    International Nuclear Information System (INIS)

    Ding Jian; Zhang Di; Konomi, Takaharu; Saito, Katsuhiko; Guo Qixin

    2012-01-01

    ZnO layers were grown on (111) GaAs substrates by laser molecular epitaxy at substrate temperatures between 200 and 550 °C. X-ray diffraction analysis revealed that c-axis of ZnO epilayer with a wurtzite structure is perpendicular to the substrate surface. X-ray rocking curves and Raman spectroscopy showed that the crystal quality of ZnO epilayers depends on the substrate temperature during the growth. Strong near-band-edge emission in the UV region without any deep-level emissions was observed from the ZnO epilayers at room temperature. The results indicate that laser molecular beam epitaxy is a promising growth method for obtaining high-quality ZnO layers on (111) GaAs substrates.

  7. AlGaInAs narrow stripe selective growth on substrates patterned with different mask designs

    International Nuclear Information System (INIS)

    Feng, W; Pan, J Q; Yang, H; Hou, L P; Zhou, F; Zhao, L J; Zhu, H L; Wang, W

    2006-01-01

    We have performed a narrow stripe selective growth of oxide-free AlGaInAs waveguides on InP substrates patterned with pairs of SiO 2 mask stripes under optimized growth conditions. The mask stripe width varied from 0 to 40 μm, while the window region width between a pair of mask stripes was fixed at 1.5, 2.5 or 3.5 μm. Flat and smooth AlGaInAs waveguides covered by specific InP layers are successfully grown on substrates patterned with different mask designs. The thickness enhancement ratio and the photoluminescence (PL) spectrum of the AlGaInAs narrow stripe waveguides are strongly dependent on the mask stripe width and the window region width. In particular, a large PL wavelength shift of 79 nm and a PL FWHM of less than 64 meV are obtained simultaneously with a small mask stripe width varying from 0 to 40 μm when the window region width is 1.5 μm. We present some possible interpretations of the experimental observations in considering both the migration effect from a masked region and the lateral vapour diffusion effect

  8. Catalytic growth of carbon nanowires on composite diamond/silicon substrates

    Energy Technology Data Exchange (ETDEWEB)

    Sellam, Amine [Université de Lorraine, Institut Jean Lamour, Département CP2S (UMR CNRS 7198), Parc de Saurupt, F-54042 Nancy Cedex (France); Miska, Patrice [Université de Lorraine, Institut Jean Lamour, Département P2M (UMR CNRS 7198), Parc de Saurupt, F-54042 Nancy Cedex (France); Ghanbaja, Jaafar [Université de Lorraine, Institut Jean Lamour, Département CP2S (UMR CNRS 7198), Parc de Saurupt, F-54042 Nancy Cedex (France); Barrat, Silvère, E-mail: Silvere.Barrat@ijl.nancy-universite.fr [Université de Lorraine, Institut Jean Lamour, Département CP2S (UMR CNRS 7198), Parc de Saurupt, F-54042 Nancy Cedex (France)

    2014-01-01

    Polycrystalline diamond (PCD) films and carbon nanowires (CNWs) provide individually highly attractive properties for science and technology applications. The possibility of carbon composite materials made from a combination of these materials remains a potential approach widely discussed in literature but modestly investigated. We report in this work an early attempt to explore this opportunity in the light of some specific experimental considerations. Carbon nanowires (CNWs) are grown at low temperature without the conventional use of external hydrocarbon vapor source on silicon substrates partially covered by a thin film of coalesced micrometric CVD diamond. Composite substrates constituted by PCD on silicon were first cleaned with H{sub 2} plasma then used for the PVD deposition of 5 nm Ni thin films. Then, samples were heat treated in a CVD reactor at 580 °C in the presence of pure H{sub 2} pressure of 60 hPa at different annealing times. Comparative effect of annealing time on the dewetting of Ni thin films and the subsequent CNWs growth process was considered in this work using systematic observations by SEM. Possible mechanisms underlying CNWs growth in pure H{sub 2} gas were proposed. The nature and structure of these CNWs have been investigated by TEM microscopy and by Raman spectroscopy on the sample showing the highest CNWs density.

  9. Multiple growths of epitaxial lift-off solar cells from a single InP substrate

    International Nuclear Information System (INIS)

    Lee, Kyusang; Shiu, Kuen-Ting; Zimmerman, Jeramy D.; Forrest, Stephen R.; Renshaw, Christopher K.

    2010-01-01

    We demonstrate multiple growths of flexible, thin-film indium tin oxide-InP Schottky-barrier solar cells on a single InP wafer via epitaxial lift-off (ELO). Layers that protect the InP parent wafer surface during the ELO process are subsequently removed by selective wet-chemical etching, with the active solar cell layers transferred to a thin, flexible plastic host substrate by cold welding at room temperature. The first- and second-growth solar cells exhibit no performance degradation under simulated Atmospheric Mass 1.5 Global (AM 1.5G) illumination, and have a power conversion efficiency of η p =14.4±0.4% and η p =14.8±0.2%, respectively. The current-voltage characteristics for the solar cells and atomic force microscope images of the substrate indicate that the parent wafer is undamaged, and is suitable for reuse after ELO and the protection-layer removal processes. X-ray photoelectron spectroscopy, reflection high-energy electron diffraction observation, and three-dimensional surface profiling show a surface that is comparable or improved to the original epiready wafer following ELO. Wafer reuse over multiple cycles suggests that high-efficiency; single-crystal thin-film solar cells may provide a practical path to low-cost solar-to-electrical energy conversion.

  10. Vertically aligned ZnO nanorods on porous silicon substrates: Effect of growth time

    Directory of Open Access Journals (Sweden)

    R. Shabannia

    2015-04-01

    Full Text Available Vertically aligned ZnO nanorods were successfully grown on porous silicon (PS substrates by chemical bath deposition at a low temperature. X-ray diffraction, field-emission scanning electron microscopy (FESEM, transmission electron microscopy (TEM, and photoluminescence (PL analyses were carried out to investigate the effect of growth duration (2 h to 8 h on the optical and structural properties of the aligned ZnO nanorods. Strong and sharp ZnO (0 0 2 peaks of the ZnO nanorods proved that the aligned ZnO nanorods were preferentially fabricated along the c-axis of the hexagonal wurtzite structure. FESEM images demonstrated that the ZnO nanorod arrays were well aligned along the c-axis and perpendicular to the PS substrates regardless of the growth duration. The TEM image showed that the top surfaces of the ZnO nanorods were round with a smooth curvature. PL spectra demonstrated that the ZnO nanorods grown for 5 h exhibited the sharpest and most intense PL peaks within the ultraviolet range among all samples.

  11. The growth and characterization of well aligned RuO2 nanorods on sapphire substrates

    International Nuclear Information System (INIS)

    Chen, C C; Chen, R S; Tsai, T Y; Huang, Y S; Tsai, D S; Tiong, K K

    2004-01-01

    Self-assembled and well aligned RuO 2 nanorods (NRs) have been grown on sapphire (SA) substrates via metal-organic chemical vapour deposition (MOCVD), using bis(ethylcyclopentadienyl)ruthenium as the source reagent. The surface morphology, structural, and spectroscopic properties of the as-deposited NRs were characterized using field-emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), selected-area electron diffractometry (SAD), x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), and micro-Raman spectroscopy. FESEM micrographs reveal that vertically aligned nanorods (NRs) were grown on SA(100), while the NRs on the SA(012) were grown with a tilt angle of ∼ 35 degrees from the normal to the substrates. TEM and SAD measurements showed that the RuO 2 NRs with square cross-section have the long axis directed along the [001] direction. The XRD results indicate that the RuO 2 NRs are (002) oriented on SA(100) and (101) oriented on SA(012) substrates. A strong substrate effect on the alignment of the RuO 2 NRs growth has been demonstrated and the probable mechanism for the formation of these NRs has been discussed. XP spectra show the coexistence of higher oxidation state of ruthenium in the as-grown RuO 2 NRs. Micro-Raman spectra show the red-shift and peak broadening of the RuO 2 signatures with respect to that of the bulk counterpart which may be indicative of a phonon confinement effect for these NRs

  12. Growth of fullerene on Ag and hydrogen-passivated Si substrates: Effect of electron beam exposure on growth modes

    International Nuclear Information System (INIS)

    Rundhe, M.V.; Dev, B.N.

    2008-01-01

    We have used Auger electron spectroscopy (AES) to investigate the effect of electron beam exposure on growth modes of fullerene (C 60 ) on substrates like Ag and hydrogen-passivated Si(1 1 1). The electron beam comprises of 3.4 keV electrons, which are used in the AES study. To investigate the effect, Auger signal (AS) vs. deposition time (t) measurements were conducted in a sequential mode, i.e., alternating deposition of C 60 and analysis using the electron beam. Duration of AES data collection after each deposition was the duration of exposure to electron beam in this experiment. For the growth study of C 60 on Ag, three AS-t plots were recorded for three different durations of exposure to electron beam. Changes in the AS-t plot, depending on the duration of exposure to the electron beam, reflect the electron beam-induced damage. Electron beam-induced damages of C 60 produce carbon materials of different densities and consequently transmission coefficient (α) of Auger electron through this material changes. In order to fit the AES (AS vs. t) data a model has been used which simultaneously provides the growth mode and the transmission coefficient. Observation of an increasing transmission coefficient with the increasing duration of exposure to the electron beam from α=0.34 to 0.60 indicates the change of the nature of the carbon material due to the partial damage of C 60

  13. Onset temperature for Si nanostructure growth on Si substrate during high vacuum electron beam annealing.

    Science.gov (United States)

    Fang, F; Markwitz, A

    2009-05-01

    Silicon nanostructures, called Si nanowhiskers, are successfully synthesized on Si(100) substrate by high vacuum electron beam annealing. The onset temperature and duration needed for the Si nanowhiskers to grow was investigated. It was found that the onset and growth morphology of Si nanowhiskers strongly depend on the annealing temperature and duration applied in the annealing cycle. The onset temperature for nanowhisker growth was determined as 680 degrees C using an annealing duration of 90 min and temperature ramps of +5 degrees C s(-1) for heating and -100 degrees C s(-1) for cooling. Decreasing the annealing time at peak temperature to 5 min required an increase in peak temperature to 800 degrees C to initiate the nanowhisker growth. At 900 degrees C the duration for annealing at peak temperature can be set to 0 s to grow silicon nanowhiskers. A correlation was found between the variation in annealing temperature and duration and the nanowhisker height and density. Annealing at 900 degrees C for 0 s, only 2-3 nanowhiskers (average height 2.4 nm) grow on a surface area of 5 x 5 microm, whereas more than 500 nanowhiskers with an important average height of 4.6 nm for field emission applications grow on the same surface area for a sample annealed at 970 degrees C for 0 s. Selected results are presented showing the possibility of controlling the density and height of Si nanowhisker growth for field emission applications by applying different annealing temperature and duration.

  14. Growth and characterization of InAs columnar quantum dots on GaAs substrate

    International Nuclear Information System (INIS)

    Li, L. H.; Patriarche, G.; Rossetti, M.; Fiore, A.

    2007-01-01

    The growth of InAs columnar quantum dots (CQDs) on GaAs substrates by molecular beam epitaxy was investigated. The CQDs were formed by depositing a 1.8 monolayer (ML) InAs seed dot layer and a short period GaAs/InAs superlattice (SL). It was found that the growth of the CQDs is very sensitive to growth interruption (GI) and growth temperature. Both longer GI and higher growth temperature impact the size dispersion of the CQDs, which causes the broadening of photoluminescence (PL) spectrum and the presence of the additional PL peak tails. By properly choosing the GI and the growth temperature, CQDs including GaAs (3 ML)/InAs (0.62 ML) SL with period number up to 35 without plastic relaxation were grown. The corresponding equivalent thickness of the SL is 41 nm which is two times higher than the theoretical critical thickness of the strained InGaAs layer with the same average In composition of 16%. The increase of the critical thickness is partially associated with the formation of the CQDs. Based on a five-stack CQD active region, laser diodes emitting around 1120 nm at room temperature were demonstrated, indicating a high material quality. CQDs with nearly isotropic cross section (20 nmx20 nm dimensions) were formed by depositing a 16-period GaAs (3 ML)/InAs (0.62 ML) SL on an InAs seed dot layer, indicating the feasibility of artificial shape engineering of QDs. Such a structure is expected to be very promising for polarization insensitive device applications, such as semiconductor optical amplifiers

  15. Study of molecular-beam epitaxy growth on patterned GaAs (311)A substrates with different mesa height

    NARCIS (Netherlands)

    Gong, Q.; Nötzel, R.; Schönherr, H.-P.; Ploog, K.

    2000-01-01

    We report on the evolution of the growth front during molecular-beam epitaxy on GaAs (3 1 1)A substrates stripe patterned along the [ ] direction as a function of the mesa height. During growth (1 0 0) and (2 1 1)A facets are formed and expand at the corners near the two opposite lying ( )A and (1 1

  16. Sintered tantalum carbide coatings on graphite substrates: Highly reliable protective coatings for bulk and epitaxial growth

    International Nuclear Information System (INIS)

    Nakamura, Daisuke; Suzumura, Akitoshi; Shigetoh, Keisuke

    2015-01-01

    Highly reliable low-cost protective coatings have been sought after for use in crucibles and susceptors for bulk and epitaxial film growth processes involving wide bandgap materials. Here, we propose a production technique for ultra-thick (50–200 μmt) tantalum carbide (TaC) protective coatings on graphite substrates, which consists of TaC slurry application and subsequent sintering processes, i.e., a wet ceramic process. Structural analysis of the sintered TaC layers indicated that they have a dense granular structure containing coarse grain with sizes of 10–50 μm. Furthermore, no cracks or pinholes penetrated through the layers, i.e., the TaC layers are highly reliable protective coatings. The analysis also indicated that no plastic deformation occurred during the production process, and the non-textured crystalline orientation of the TaC layers is the origin of their high reliability and durability. The TaC-coated graphite crucibles were tested in an aluminum nitride (AlN) sublimation growth process, which involves extremely corrosive conditions, and demonstrated their practical reliability and durability in the AlN growth process as a TaC-coated graphite. The application of the TaC-coated graphite materials to crucibles and susceptors for use in bulk AlN single crystal growth, bulk silicon carbide (SiC) single crystal growth, chemical vapor deposition of epitaxial SiC films, and metal-organic vapor phase epitaxy of group-III nitrides will lead to further improvements in crystal quality and reduced processing costs

  17. Sintered tantalum carbide coatings on graphite substrates: Highly reliable protective coatings for bulk and epitaxial growth

    Energy Technology Data Exchange (ETDEWEB)

    Nakamura, Daisuke; Suzumura, Akitoshi; Shigetoh, Keisuke [Toyota Central R and D Labs., Inc., Nagakute, Aichi 480-1192 (Japan)

    2015-02-23

    Highly reliable low-cost protective coatings have been sought after for use in crucibles and susceptors for bulk and epitaxial film growth processes involving wide bandgap materials. Here, we propose a production technique for ultra-thick (50–200 μmt) tantalum carbide (TaC) protective coatings on graphite substrates, which consists of TaC slurry application and subsequent sintering processes, i.e., a wet ceramic process. Structural analysis of the sintered TaC layers indicated that they have a dense granular structure containing coarse grain with sizes of 10–50 μm. Furthermore, no cracks or pinholes penetrated through the layers, i.e., the TaC layers are highly reliable protective coatings. The analysis also indicated that no plastic deformation occurred during the production process, and the non-textured crystalline orientation of the TaC layers is the origin of their high reliability and durability. The TaC-coated graphite crucibles were tested in an aluminum nitride (AlN) sublimation growth process, which involves extremely corrosive conditions, and demonstrated their practical reliability and durability in the AlN growth process as a TaC-coated graphite. The application of the TaC-coated graphite materials to crucibles and susceptors for use in bulk AlN single crystal growth, bulk silicon carbide (SiC) single crystal growth, chemical vapor deposition of epitaxial SiC films, and metal-organic vapor phase epitaxy of group-III nitrides will lead to further improvements in crystal quality and reduced processing costs.

  18. In situ observation of carbon nanotube layer growth on microbolometers with substrates at ambient temperature

    Science.gov (United States)

    Svatoš, Vojtěch; Gablech, Imrich; Ilic, B. Robert; Pekárek, Jan; Neužil, Pavel

    2018-03-01

    Carbon nanotubes (CNTs) have near unity infrared (IR) absorption efficiency, making them extremely attractive for IR imaging devices. Since CNT growth occurs at elevated temperatures, the integration of CNTs with IR imaging devices is challenging and has not yet been achieved. Here, we show a strategy for implementing CNTs as IR absorbers using differential heating of thermally isolated microbolometer membranes in a C2H2 environment. During the process, CNTs were catalytically grown on the surface of a locally heated membrane, while the substrate was maintained at an ambient temperature. CNT growth was monitored in situ in real time using optical microscopy. During growth, we measured the intensity of light emission and the reflected light from the heated microbolometer. Our measurements of bolometer performance show that the CNT layer on the surface of the microbolometer membrane increases the IR response by a factor of (2.3 ± 0.1) (mean ± one standard deviation of the least-squares fit parameters). This work opens the door to integrating near unity IR absorption, CNT-based, IR absorbers with hybrid complementary metal-oxide-semiconductor focal plane array architectures.

  19. Solid-support substrates for plant growth at a lunar base

    Science.gov (United States)

    Ming, D. W.; Galindo, C.; Henninger, D. L.

    1990-01-01

    Zeoponics is only in its developmental stages at the Johnson Space Center and is defined as the cultivation of plants in zeolite substrates that contain several essential plant growth cations on their exchange sites, and have minor amounts of mineral phases and/or anion-exchange resins that supply essential plant growth anions. Zeolites are hydrated aluminosilicates of alkali and alkaline earth cations with the ability to exchange most of their constituent exchange cations as well as hydrate/dehydrate without change to their structural framework. Because zeolites have extremely high cation exchange capabilities, they are very attractive media for plant growth. It is possible to partially or fully saturate plant-essential cations on zeolites. Zeoponic systems will probably have their greatest applications at planetary bases (e.g., lunar bases). Lunar raw materials will have to be located that are suited for the synthesis of zeolites and other exchange resings. Lunar 'soil' simulants have been or are being prepared for zeolite/smectite synthesis and 'soil' dissolution studies.

  20. Growth and nutrient balance of Enterolobium contortsiliquum seedlings with addition of organic substrates and wastewater

    Directory of Open Access Journals (Sweden)

    Emanuel França Araújo

    2016-06-01

    Full Text Available Given the strong generation of solid organic waste and wastewater, the use of these materials as a primary source of nutrients is an important practice in environmental management, especially in the production of seedlings with emphasis on degraded areas. The objective of this study was to evaluate growth and nutrient balance of “tamboril” (Enterolobium contortsiliquum (Vell. Morong seedlings grown on substrates with different formulations proportions of organic matter irrigated with wastewater. It was tested five ratios of organic composts and soil: 0:100; 20:80; 40:60; 60:40 and 80:20 v/v. Two procedences of irrigation water was tested: water supply and wastewater from swine farming, arranged in a completely randomized design in a factorial scheme 5 x 2, with four replications. At 90 days, we evaluate seedlings morphological variables, the integrate diagnosis recommendation index and the nutrient balance index. The organic residue contributes to seedlings growth and nutritional balance. The proportion 80:20 proved to be the most suitable for “tamboril” seedlings production. Seedlings presented lower growth and nutritional balance when irrigate with swine farm wastewater.

  1. Growth and characterization of thick cBN coatings on silicon and tool substrates

    International Nuclear Information System (INIS)

    Bewilogua, K.; Keunecke, M.; Weigel, K.; Wiemann, E.

    2004-01-01

    Recently some research groups have achieved progress in the deposition of cubic boron nitride (cBN) coatings with a thickness of 2 μm and more, which is necessary for cutting tool applications. In our laboratory, thick cBN coatings were sputter deposited on silicon substrates using a boron carbide target. Following a boron carbide interlayer (few 100 nm thick), a gradient layer with continuously increasing nitrogen content was prepared. After the cBN nucleation, the process parameters were modified for the cBN film growth to a thickness of more than 2 μm. However, the transfer of this technology to technically relevant substrates, like cemented carbide cutting inserts, required some further process modifications. At first, a titanium interlayer had to be deposited followed by a more than 1-μm-thick boron carbide layer. The next steps were identical to those on silicon substrates. The total coating thickness was in the range of 3 μm with a 0.5- to nearly 1-μm-thick cBN top layer. In spite of the enormous intrinsic stress, both the coatings on silicon and on cemented carbide exhibited a good adhesion and a prolonged stability in humid air. Oxidation experiments revealed a stability of the coating system on cemented carbide up to 700 deg. C and higher. Coated cutting inserts were tested in turning operations with different metallic workpiece materials. The test results will be compared to those of well-established cutting materials, like polycrystalline cubic boron nitride (PCBN) and oxide ceramics, considering the wear of coated tools

  2. Homo- and heteroepitaxial growth behavior of upright InAs nanowires on InAs and GaAs substrates

    Energy Technology Data Exchange (ETDEWEB)

    Bauer, Jens; Gottschalch, Volker; Paetzelt, Hendrik [Institut fuer Anorganische Chemie, Universitaet Leipzig, Johannesallee 29, D-04103 Leipzig (Germany); Wagner, Gerald [Institut fuer Kristallographie und Mineralogie, Universitaet Leipzig, Linnestr. 5, D-04103 Leipzig (Germany); Pietsch, Ulrich [Festkoerperphysik, Universitaet Siegen, D-57068 Siegen (Germany)

    2008-07-01

    Semiconductor nanowires (NW) acquire recently attraction because of promising new application fields in electronics and optoelectronic. We applied the vapor-liquid-solid mechanism with gold seeds in combination with low-pressure metal-organic vapor phase epitaxy (LP-MOVPE) to achieve replicable InAs NW growth with high growth rates. Since the initial alloying of the gold seeds with the substrate material plays a deciding role for the inceptive NW growth, InAs free standing nanowires were grown on GaAs(111)B substrate as well as on InAs/GaAs(111)B quasi-substrate. The influence of the MOVPE parameters will be discussed with respect to NW morphology and real-structure. A special focus will be set on the heteroepitaxial InAs NW growth on GaAs substrates. Gracing-incidence X-ray studies and transmission electron microscopy investigations revealed the existence of a thin Ga{sub x}In{sub 1-x}As graduated alloy layer with embedded crystalline gold alloy particles at the NW substrate interface. The effect of droplet composition on the VLS growth will be presented in a thermodynamic model.

  3. Characterisation of the broad substrate specificity 2-keto acid decarboxylase Aro10p of Saccharomyces kudriavzevii and its implication in aroma development.

    Science.gov (United States)

    Stribny, Jiri; Romagnoli, Gabriele; Pérez-Torrado, Roberto; Daran, Jean-Marc; Querol, Amparo

    2016-03-12

    The yeast amino acid catabolism plays an important role in flavour generation since higher alcohols and acetate esters, amino acid catabolism end products, are key components of overall flavour and aroma in fermented products. Comparative studies have shown that other Saccharomyces species, such as S. kudriavzevii, differ during the production of aroma-active higher alcohols and their esters compared to S. cerevisiae. In this study, we performed a comparative analysis of the enzymes involved in the amino acid catabolism of S. kudriavzevii with their potential to improve the flavour production capacity of S. cerevisiae. In silico screening, based on the severity of amino acid substitutions evaluated by Grantham matrix, revealed four candidates, of which S. kudriavzevii Aro10p (SkAro10p) had the highest score. The analysis of higher alcohols and esters produced by S. cerevisiae then revealed enhanced formation of isobutanol, isoamyl alcohol and their esters when endogenous ARO10 was replaced with ARO10 from S. kudriavzevii. Also, significant differences in the aroma profile were found in fermentations of synthetic wine must. Substrate specificities of SkAro10p were compared with those of S. cerevisiae Aro10p (ScAro10p) by their expression in a 2-keto acid decarboxylase-null S. cerevisiae strain. Unlike the cell extracts with expressed ScAro10p which showed greater activity for phenylpyruvate, which suggests this phenylalanine-derivative to be the preferred substrate, the decarboxylation activities measured in the cell extracts with SkAro10p ranged with all the tested substrates at the same level. The activities of SkAro10p towards substrates (except phenylpyruvate) were higher than of those for ScAro10p. The results indicate that the amino acid variations observed between the orthologues decarboxylases encoded by SkARO10 and ScARO10 could be the reason for the distinct enzyme properties, which possibly lead to the enhanced production of several flavour compounds. The

  4. Evolutionary selection growth of two-dimensional materials on polycrystalline substrates

    Science.gov (United States)

    Vlassiouk, Ivan V.; Stehle, Yijing; Pudasaini, Pushpa Raj; Unocic, Raymond R.; Rack, Philip D.; Baddorf, Arthur P.; Ivanov, Ilia N.; Lavrik, Nickolay V.; List, Frederick; Gupta, Nitant; Bets, Ksenia V.; Yakobson, Boris I.; Smirnov, Sergei N.

    2018-03-01

    There is a demand for the manufacture of two-dimensional (2D) materials with high-quality single crystals of large size. Usually, epitaxial growth is considered the method of choice1 in preparing single-crystalline thin films, but it requires single-crystal substrates for deposition. Here we present a different approach and report the synthesis of single-crystal-like monolayer graphene films on polycrystalline substrates. The technological realization of the proposed method resembles the Czochralski process and is based on the evolutionary selection2 approach, which is now realized in 2D geometry. The method relies on `self-selection' of the fastest-growing domain orientation, which eventually overwhelms the slower-growing domains and yields a single-crystal continuous 2D film. Here we have used it to synthesize foot-long graphene films at rates up to 2.5 cm h-1 that possess the quality of a single crystal. We anticipate that the proposed approach could be readily adopted for the synthesis of other 2D materials and heterostructures.

  5. Effect of Substrate Morphology on Growth and Field Emission Properties of Carbon Nanotube Films

    Directory of Open Access Journals (Sweden)

    Kumar Vikram

    2008-01-01

    Full Text Available AbstractCarbon nanotube (CNT films were grown by microwave plasma-enhanced chemical vapor deposition process on four types of Si substrates: (i mirror polished, (ii catalyst patterned, (iii mechanically polished having pits of varying size and shape, and (iv electrochemically etched. Iron thin film was used as catalytic material and acetylene and ammonia as the precursors. Morphological and structural characteristics of the films were investigated by scanning and transmission electron microscopes, respectively. CNT films of different morphology such as vertically aligned, randomly oriented flowers, or honey-comb like, depending on the morphology of the Si substrates, were obtained. CNTs had sharp tip and bamboo-like internal structure irrespective of growth morphology of the films. Comparative field emission measurements showed that patterned CNT films and that with randomly oriented morphology had superior emission characteristics with threshold field as low as ~2.0 V/μm. The defective (bamboo-structure structures of CNTs have been suggested for the enhanced emission performance of randomly oriented nanotube samples.

  6. The influence of substrate type and chlormequat on the growth and flowering of marigold (Tagetes L.

    Directory of Open Access Journals (Sweden)

    Maślanka Małgorzata

    2017-12-01

    Full Text Available This study was conducted to investigate the effect of various horticultural substrates (compost, peat-coconut, peat TS1, flower soil, lowmoor peat and a foliar spray of chlormequat (at a concentration of 1380 mg dm-3 on the growth and flowering of the marigold cultivars belonging to two species: Tagetes erecta - ʻMarvel Mixtureʼ and ʻTaishan Orangeʼ, and Tagetes patula - ʻDurango Redʼ and ʻBonanza Flameʼ. The obtained results show that the plants grown in peat TS1 and peat-coconut were taller, had longer internodes and leaves, and thicker stems than the plants grown in the other substrates. Chlormequat significantly reduced the height of ʻMarvel Mixtureʼ (in peat TS1, ʻTaishan Orangeʼ (in lowmoor peat and ‘Bonanza Flameʼ (in peat-coconut. The use of chlormequat also accelerated the development of flower heads in ʻTaishan Orangeʼ (in lowmoor peat.

  7. Gold nanoparticle growth control - Implementing novel wet chemistry method on silicon substrate

    KAUST Repository

    Al-Ameer, Ammar

    2013-04-01

    Controlling particle size, shape, nucleation, and self-assembly on surfaces are some of the main challenges facing electronic device fabrication. In this work, growth of gold nanoparticles over a wide range of sizes was investigated by using a novel wet chemical method, where potassium iodide is used as the reducing solution and gold chloride as the metal precursor, on silicon substrates. Four parameters were studied: soaking time, solution temperature, concentration of the solution of gold chloride, and surface pre-treatment of the substrate. Synthesized nanoparticles were then characterized using scanning electron microscopy (SEM). The precise control of the location and order of the grown gold overlayer was achieved by using focused ion beam (FIB) patterning of a silicon surface, pre-treated with potassium iodide. By varying the soaking time and temperature, different particle sizes and shapes were obtained. Flat geometrical shapes and spherical shapes were observed. We believe, that the method described in this work is potentially a straightforward and efficient way to fabricate gold contacts for microelectronics. © 2013 IEEE.

  8. Direct growth of graphene on quartz substrate as saturable absorber for femtosecond solid-state laser

    International Nuclear Information System (INIS)

    Xu, S C; Man, B Y; Jiang, S Z; Chen, C S; Liu, M; Yang, C; Gao, S B; Zhang, C; Feng, D J; Huang, Q J; Hu, G D; Chen, X F

    2014-01-01

    We present a novel method for the direct metal-free growth of graphene on quartz substrate. The direct-grown graphene yields excellent nonlinear saturable absorption properties and is demonstrated to be suitable as a saturable absorber (SA) for an ultrafast solid-state laser. Nearly Fourier-limited 367 fs was obtained at a central wavelength of 1048 nm with a repetition rate of 105.7 MHz. At a pump power of 7.95 W, the average output power was 1.93 W and the highest pulse energy reached 18.3 nJ, with a peak power of 49.8 kW. Our work opens an easy route for making a reliable graphene SA with a mode-locking technique and also displays an exciting prospect in making low-cost and ultrafast lasers. (letter)

  9. Direct growth of graphene on quartz substrates for label-free detection of adenosine triphosphate.

    Science.gov (United States)

    Xu, Shicai; Man, Baoyuan; Jiang, Shouzhen; Yue, Weiwei; Yang, Cheng; Liu, Mei; Chen, Chuansong; Zhang, Chao

    2014-04-25

    We demonstrate that continuous, uniform graphene films can be directly synthesized on quartz substrates using a two-temperature-zone chemical vapor deposition system and that their layers can be controlled by adjusting the precursor partial pressure. Raman spectroscopy and transmission electron microscopy confirm the formation of monolayer graphene with a grain size of ∼100 nm. Hall measurements show a room-temperature carrier mobility above 1500 cm2 V(-1) s(-1). The optical transmittance and conductance of the graphene films are comparable to those of transferred metal-catalyzed graphene. The method avoids the complicated and skilled post-growth transfer process and allows the graphene to be directly incorporated into a fully functional biosensor for label-free detection of adenosine triphosphate (ATP). This device shows a fast response time of a few milliseconds and achieves a high sensitivity to ATP molecules over a very wide range from 0.002 to 5 mM.

  10. Heteroepitaxial Growth of Vacuum-Evaporated Si-Ge Films on Nano structured Silicon Substrates

    International Nuclear Information System (INIS)

    Ayu Wazira Azhari; Ayu Wazira Azhari; Kamaruzzaman Sopian; Saleem Hussain Zaidi

    2015-01-01

    In this study, a low-cost vacuum-evaporated technique is used in the heteroepitaxial growth of Si-Ge films. Three different surface variations are employed: for example polished Si, Si micro pyramids and Si nano pillars profiles. A simple metal-assisted chemical etching method is used to fabricate the Si nano pillars, with Ag acting as a catalyst. Following deposition, substrates are subjected to post-deposition thermal annealing at 1000 degree Celsius to improve the crystallinity of the Ge layer. Optical and morphological studies of surface area are conducted using field emission scanning electron microscopy (FE-SEM), Energy Dispersive X-ray (EDX), Raman spectroscopy and infrared spectroscopy. From the infrared spectroscopy analysis, the energy bandgap for Si-Ge films is estimated to be around 0.94 eV. This high-quality Si-Ge film is most favourable for optics, optoelectronics and high-efficiency solar cell applications. (author)

  11. Growth and quantum transport properties of vertical Bi2Se3 nanoplate films on Si substrates.

    Science.gov (United States)

    Li, M Z; Wang, Z H; Yang, L; Pan, D S; Li, Da; Gao, Xuan; Zhang, Zhi-Dong

    2018-05-14

    Controlling the growth direction (planar vs. vertical) and surface-to-bulk ratio can lead to lots of unique properties for two-dimensional (2D) layered materials. We report a simple method to fabricate continuous films of vertical Bi2Se3 nanoplates on Si substrate and investigate the quantum transport properties of such films. In contrast to (001) oriented planar Bi2Se3 nanoplate film, vertical Bi2Se3 nanoplate films are enclosed by (015) facets, which possess high surface-to-bulk ratio that can enhance the quantum transport property of topological surface states. And by controlling the compactness of vertical Bi2Se3 nanoplates, we realized an effective tuning of the weak antilocalization (WAL) effect from topological surface states in Bi2Se3 films. Our work paves a way for exploring the unique transport properties of this unconventional structure topological insulator film. © 2018 IOP Publishing Ltd.

  12. Study of carbide-forming element interlayers for diamond nucleation and growth on silicon and WC-Co substrates

    International Nuclear Information System (INIS)

    Tang, Y.; Li, Y.S.; Yang, Q.; Hirose, A.

    2010-01-01

    Diamond nucleation and growth on several typical carbide-forming elements (CFE) (Ti, Cr and W) coated Si and WC-Co substrates were studied. The ion beam sputtered CFE interlayers show an amorphous/nanocrystalline microstructure. The diamond formed on the CFE coated substrates shows higher nucleation density and rate and finer grain structure than on uncoated substrates. Consequently, nanocrystalline diamond thin films can be formed on the CFE coated substrates under conventional microcrystalline diamond growth conditions. Among the three tested CFE interlayers, diamond has the highest nucleation density and rate on W layer and the lowest on Ti layer. The diamond nucleation density and rate on CFE coated WC-Co are much higher than those on widely used metal nitride coated WC-Co.

  13. Tolerance of GaAs as an original substrate for HVPE growth of free standing GaN

    Science.gov (United States)

    Suzuki, Mio; Sato, T.; Suemasu, T.; Hasegawa, F.

    2004-09-01

    In order to investigate possibility of thick GaN growth on a GaAs substrate by halide vapar phase epitaxy (HVPE), GaN was grown on GaAs(111)/Ti wafer with Ti deposited by E-gun. It was found that surface treatment of the GaAs substrate by HF solution deteriorated greatly the tolerence of GaAs and that Ti can protected GaAs from erosion by NH3. By depositing Ti on GaAs(111)A surface, a millor-like GaN layer could be grown at 1000 °C for 1 hour without serious deterioration of the original GaAs substrate. By increasing the growth rate, a thick free standing GaN will be obtained with GaAs as an original substrate in near future.

  14. Tolerance of GaAs as an original substrate for HVPE growth of free standing GaN

    Energy Technology Data Exchange (ETDEWEB)

    Suzuki, Mio; Sato, T.; Suemasu, T.; Hasegawa, F. [University of Tsukuba, Institute of Applied Physics, Tsukuba, Ibaraki 305-8573 (Japan)

    2004-09-01

    In order to investigate possibility of thick GaN growth on a GaAs substrate by halide vapar phase epitaxy (HVPE), GaN was grown on GaAs(111)/Ti wafer with Ti deposited by E-gun. It was found that surface treatment of the GaAs substrate by HF solution deteriorated greatly the tolerance of GaAs and that Ti can protected GaAs from erosion by NH{sub 3}. By depositing Ti on GaAs(111)A surface, a mirror-like GaN layer could be grown at 1000 C for 1 hour without serious deterioration of the original GaAs substrate. By increasing the growth rate, a thick free standing GaN will be obtained with GaAs as an original substrate in near future. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  15. Aerobic Degradation of Trichloroethylene by Co-Metabolism Using Phenol and Gasoline as Growth Substrates

    Directory of Open Access Journals (Sweden)

    Yan Li

    2014-05-01

    Full Text Available Trichloroethylene (TCE is a common groundwater contaminant of toxic and carcinogenic concern. Aerobic co-metabolic processes are the predominant pathways for TCE complete degradation. In this study, Pseudomonas fluorescens was studied as the active microorganism to degrade TCE under aerobic condition by co-metabolic degradation using phenol and gasoline as growth substrates. Operating conditions influencing TCE degradation efficiency were optimized. TCE co-metabolic degradation rate reached the maximum of 80% under the optimized conditions of degradation time of 3 days, initial OD600 of microorganism culture of 0.14 (1.26 × 107 cell/mL, initial phenol concentration of 100 mg/L, initial TCE concentration of 0.1 mg/L, pH of 6.0, and salinity of 0.1%. The modified transformation capacity and transformation yield were 20 μg (TCE/mg (biomass and 5.1 μg (TCE/mg (phenol, respectively. Addition of nutrient broth promoted TCE degradation with phenol as growth substrate. It was revealed that catechol 1,2-dioxygenase played an important role in TCE co-metabolism. The dechlorination of TCE was complete, and less chlorinated products were not detected at the end of the experiment. TCE could also be co-metabolized in the presence of gasoline; however, the degradation rate was not high (28%. When phenol was introduced into the system of TCE and gasoline, TCE and gasoline could be removed at substantial rates (up to 59% and 69%, respectively. This study provides a promising approach for the removal of combined pollution of TCE and gasoline.

  16. Direct Growth of High-Quality InP Layers on GaAs Substrates by MOCVD

    Directory of Open Access Journals (Sweden)

    K. F. Yarn

    2003-01-01

    group V partial pressure, growth rate and V/III ratios. A mirror-like, uniform surface and high crystal quality of the metamorphic buffer layer directly grown on a GaAs substrate can be achieved. Finally, to investigate the performance of the metamorphic microwave devices, we also fabricate the InAlAs/InGaAs metamorphic HEMT on GaAs substrates.

  17. High Quality, Low Cost Bulk Gallium Nitride Substrates Grown by the Electrochemical Solution Growth Method

    Energy Technology Data Exchange (ETDEWEB)

    Seacrist, Michael [SunEdison Inc., St. Peters, MO (United States)

    2017-08-15

    The objective of this project was to develop the Electrochemical Solution Growth (ESG) method conceived / patented at Sandia National Laboratory into a commercially viable bulk gallium nitride (GaN) growth process that can be scaled to low cost, high quality, and large area GaN wafer substrate manufacturing. The goal was to advance the ESG growth technology by demonstrating rotating seed growth at the lab scale and then transitioning process to prototype commercial system, while validating the GaN material and electronic / optical device quality. The desired outcome of the project is a prototype commercial process for US-based manufacturing of high quality, large area, and lower cost GaN substrates that can drive widespread deployment of energy efficient GaN-based power electronic and optical devices. In year 1 of the project (Sept 2012 – Dec 2013) the overall objective was to demonstrate crystalline GaN growth > 100um on a GaN seed crystal. The development plan included tasks to demonstrate and implement a method for purifying reagent grade salts, develop the reactor 1 process for rotating seed Electrochemical Solution Growth (ESG) of GaN, grow and characterize ESG GaN films, develop a fluid flow and reaction chemistry model for GaN film growth, and design / build an improved growth reactor capable of scaling to 50mm seed diameter. The first year’s project objectives were met in some task areas including salt purification, film characterization, modeling, and reactor 2 design / fabrication. However, the key project objective of the growth of a crystalline GaN film on the seed template was not achieved. Amorphous film growth on the order of a few tenths of a micron has been detected with a film composition including Ga and N, plus several other impurities originating from the process solution and hardware. The presence of these impurities, particularly the oxygen, has inhibited the demonstration of crystalline GaN film growth on the seed template. However, the

  18. Growth of tin oxide thin films composed of nanoparticles on hydrophilic and hydrophobic glass substrates by spray pyrolysis technique

    Energy Technology Data Exchange (ETDEWEB)

    Paloly, Abdul Rasheed; Satheesh, M. [Nano Functional Materials Lab, Department of Physics, Cochin University of Science and Technology, Kochi 682022, Kerala (India); Martínez-Tomás, M. Carmen; Muñoz-Sanjosé, Vicente [Departamento de Física Aplicada y Electromagnetismo, Universitat de Valencia, c/Dr Moliner 50, Burjassot, Valencia 46100 (Spain); Rajappan Achary, Sreekumar [Nano Functional Materials Lab, Department of Physics, Cochin University of Science and Technology, Kochi 682022, Kerala (India); Bushiri, M. Junaid, E-mail: junaidbushiri@gmail.com [Nano Functional Materials Lab, Department of Physics, Cochin University of Science and Technology, Kochi 682022, Kerala (India)

    2015-12-01

    Highlights: • SnO{sub 2} thin films were grown on hydrophilic and hydrophobic glass substrates. • Samples on hydrophobic substrates are having comparatively larger lattice volume. • Films on hydrophobic substrates have larger particles and low density distribution. • Substrate dependent photoluminescence emission is observed and studied. • SnO{sub 2} thin films grown over hydrophobic substrates may find potential applications. - Abstract: In this paper, we have demonstrated the growth of tin oxide (SnO{sub 2}) thin films composed of nanoparticles on hydrophobic (siliconized) and hydrophilic (non-siliconized) glass substrates by using the spray pyrolysis technique. X-ray diffraction (XRD) analysis confirmed the formation of SnO{sub 2} thin films with tetragonal rutile-phase structure. Average particle size of nanoparticles was determined to be in the range of 3–4 nm measured from the front view images obtained by a field emission gun scanning electron microscope (FESEM), while the size of nanoparticle clusters, when present, were in the range of 11–20 nm. Surface morphology of SnO{sub 2} films grown over hydrophobic substrates revealed larger isolated particles which are less crowded compared to the highly crowded and agglomerated smaller particles in films on hydrophilic substrates. Blue shift in the band gap is observed in samples in which the average particle size is slightly larger than the exciton Bohr radius. Photoluminescence (PL) analysis of samples grown over hydrophobic substrates exhibited an intense defect level emission and a weak near band edge emission. The enhanced visible emission from these SnO{sub 2} thin films is attributed to lattice defects formed during the film growth due to the mismatch between the film and the hydrophobic substrate surface.

  19. Nanoscale imaging of the growth and division of bacterial cells on planar substrates with the atomic force microscope

    Energy Technology Data Exchange (ETDEWEB)

    Van Der Hofstadt, M. [Institut de Bioenginyeria de Catalunya (IBEC), C/ Baldiri i Reixac 11-15, 08028 Barcelona (Spain); Hüttener, M.; Juárez, A. [Institut de Bioenginyeria de Catalunya (IBEC), C/ Baldiri i Reixac 11-15, 08028 Barcelona (Spain); Departament de Microbiologia, Universitat de Barcelona, Avinguda Diagonal 645, 08028 Barcelona (Spain); Gomila, G., E-mail: ggomila@ibecbarcelona.eu [Institut de Bioenginyeria de Catalunya (IBEC), C/ Baldiri i Reixac 11-15, 08028 Barcelona (Spain); Departament d' Electronica, Universitat de Barcelona, C/ Marti i Franqués 1, 08028 Barcelona (Spain)

    2015-07-15

    With the use of the atomic force microscope (AFM), the Nanomicrobiology field has advanced drastically. Due to the complexity of imaging living bacterial processes in their natural growing environments, improvements have come to a standstill. Here we show the in situ nanoscale imaging of the growth and division of single bacterial cells on planar substrates with the atomic force microscope. To achieve this, we minimized the lateral shear forces responsible for the detachment of weakly adsorbed bacteria on planar substrates with the use of the so called dynamic jumping mode with very soft cantilever probes. With this approach, gentle imaging conditions can be maintained for long periods of time, enabling the continuous imaging of the bacterial cell growth and division, even on planar substrates. Present results offer the possibility to observe living processes of untrapped bacteria weakly attached to planar substrates. - Highlights: • Gelatine coatings used to weakly attach bacterial cells onto planar substrates. • Use of the dynamic jumping mode as a non-perturbing bacterial imaging mode. • Nanoscale resolution imaging of unperturbed single living bacterial cells. • Growth and division of single bacteria cells on planar substrates observed.

  20. Modeling of metal nanocluster growth on patterned substrates and surface pattern formation under ion bombardment

    Energy Technology Data Exchange (ETDEWEB)

    Numazawa, Satoshi

    2012-11-01

    This work addresses the metal nanocluster growth process on prepatterned substrates, the development of atomistic simulation method with respect to an acceleration of the atomistic transition states, and the continuum model of the ion-beam inducing semiconductor surface pattern formation mechanism. Experimentally, highly ordered Ag nanocluster structures have been grown on pre-patterned amorphous SiO{sub 2} surfaces by oblique angle physical vapor deposition at room temperature. Despite the small undulation of the rippled surface, the stripe-like Ag nanoclusters are very pronounced, reproducible and well-separated. The first topic is the investigation of this growth process with a continuum theoretical approach to the surface gas condensation as well as an atomistic cluster growth model. The atomistic simulation model is a lattice-based kinetic Monte-Carlo (KMC) method using a combination of a simplified inter-atomic potential and experimental transition barriers taken from the literature. An effective transition event classification method is introduced which allows a boost factor of several thousand compared to a traditional KMC approach, thus allowing experimental time scales to be modeled. The simulation predicts a low sticking probability for the arriving atoms, millisecond order lifetimes for single Ag monomers and {approx}1 nm square surface migration ranges of Ag monomers. The simulations give excellent reproduction of the experimentally observed nanocluster growth patterns. The second topic specifies the acceleration scheme utilized in the metallic cluster growth model. Concerning the atomistic movements, a classical harmonic transition state theory is considered and applied in discrete lattice cells with hierarchical transition levels. The model results in an effective reduction of KMC simulation steps by utilizing a classification scheme of transition levels for thermally activated atomistic diffusion processes. Thermally activated atomistic movements

  1. Modeling of metal nanocluster growth on patterned substrates and surface pattern formation under ion bombardment

    Energy Technology Data Exchange (ETDEWEB)

    Numazawa, Satoshi

    2012-11-01

    This work addresses the metal nanocluster growth process on prepatterned substrates, the development of atomistic simulation method with respect to an acceleration of the atomistic transition states, and the continuum model of the ion-beam inducing semiconductor surface pattern formation mechanism. Experimentally, highly ordered Ag nanocluster structures have been grown on pre-patterned amorphous SiO{sub 2} surfaces by oblique angle physical vapor deposition at room temperature. Despite the small undulation of the rippled surface, the stripe-like Ag nanoclusters are very pronounced, reproducible and well-separated. The first topic is the investigation of this growth process with a continuum theoretical approach to the surface gas condensation as well as an atomistic cluster growth model. The atomistic simulation model is a lattice-based kinetic Monte-Carlo (KMC) method using a combination of a simplified inter-atomic potential and experimental transition barriers taken from the literature. An effective transition event classification method is introduced which allows a boost factor of several thousand compared to a traditional KMC approach, thus allowing experimental time scales to be modeled. The simulation predicts a low sticking probability for the arriving atoms, millisecond order lifetimes for single Ag monomers and {approx}1 nm square surface migration ranges of Ag monomers. The simulations give excellent reproduction of the experimentally observed nanocluster growth patterns. The second topic specifies the acceleration scheme utilized in the metallic cluster growth model. Concerning the atomistic movements, a classical harmonic transition state theory is considered and applied in discrete lattice cells with hierarchical transition levels. The model results in an effective reduction of KMC simulation steps by utilizing a classification scheme of transition levels for thermally activated atomistic diffusion processes. Thermally activated atomistic movements

  2. Molten Salt-Based Growth of Bulk GaN and InN for Substrates

    Energy Technology Data Exchange (ETDEWEB)

    Waldrip, Karen Elizabeth [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Advanced Power Sources Technology Dept.; Tsao, Jeffrey Yeenien [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Energy Sciences Dept.; Kerley, Thomas M. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Advanced Materials Sciences Dept.

    2006-09-01

    An atmospheric pressure approach to growth of bulk group III-nitrides is outlined. Native III-nitride substrates for optoelectronic and high power, high frequency electronics are desirable to enhance performance and reliability of these devices; currently, these materials are available in research quantities only for GaN, and are unavailable in the case of InN. The thermodynamics and kinetics of the reactions associated with traditional crystal growth techniques place these activities on the extreme edges of experimental physics. The technique described herein relies on the production of the nitride precursor (N3-) by chemical and/or electrochemical methods in a molten halide salt. This nitride ion is then reacted with group III metals in such a manner as to form the bulk nitride material. The work performed during the period of funding (July 2004-September 2005) focused on the initial measurement of the solubility of GaN in molten LiCl as a function of temperature, the construction of electrochemical cells, the modification of a commercial glove box (required for handling very hygroscopic LiCl), and on securing intellectual property for the technique.

  3. Highly Oriented Growth of Catalytically Active Zeolite ZSM‐5 Films with a Broad Range of Si/Al Ratios

    OpenAIRE

    Fu, Donglong; Schmidt, Joel E.; Ristanović, Zoran; Chowdhury, Abhishek Dutta; Meirer, Florian; Weckhuysen, Bert M.

    2017-01-01

    Abstract Highly b‐oriented zeolite ZSM‐5 films are critical for applications in catalysis and separations and may serve as models to study diffusion and catalytic properties in single zeolite channels. However, the introduction of catalytically active Al3+ usually disrupts the orientation of zeolite films. Herein, using structure‐directing agents with hydroxy groups, we demonstrate a new method to prepare highly b‐oriented zeolite ZSM‐5 films with a broad range of Si/Al ratios (Si/Al=45 to ∞)...

  4. Design and development of green roof substrate to improve runoff water quality: plant growth experiments and adsorption.

    Science.gov (United States)

    Vijayaraghavan, K; Raja, Franklin D

    2014-10-15

    Many studies worldwide have investigated the potential benefits achievable by transforming brown roofs of buildings to green roofs. However, little literature examined the runoff quality/sorption ability of green roofs. As the green roof substrate is the main component to alter the quality of runoff, this investigation raises the possibility of using a mixture of low-cost inorganic materials to develop a green roof substrate. The tested materials include exfoliated vermiculite, expanded perlite, crushed brick and sand along with organic component (coco-peat). Detailed physical and chemical analyses revealed that each of these materials possesses different characteristics and hence a mix of these materials was desirable to develop an optimal green roof substrate. Using factorial design, 18 different substrate mixes were prepared and detailed examination indicated that mix-12 exhibited desirable characteristics of green roof substrate with low bulk density (431 kg/m(3)), high water holding capacity (39.4%), air filled porosity (19.5%), and hydraulic conductivity (4570 mm/h). The substrate mix also provided maximum support to Portulaca grandiflora (380% total biomass increment) over one month of growth. To explore the leaching characteristics and sorption capacity of developed green roof substrate, a down-flow packed column arrangement was employed. High conductivity and total dissolved solids along with light metal ions (Na, K, Ca and Mg) were observed in the leachates during initial stages of column operation; however the concentration of ions ceased during the final stages of operation (600 min). Experiments with metal-spiked deionized water revealed that green roof substrate possess high sorption capacity towards various heavy metal ions (Al, Fe, Cr, Cu, Ni, Pb, Zn and Cd). Thus the developed growth substrate possesses desirable characteristics for green roofs along with high sorption capacity. Copyright © 2014 Elsevier Ltd. All rights reserved.

  5. Molecular beam epitaxial growth and characterization of GaSb layers on GaAs (0 0 1) substrates

    International Nuclear Information System (INIS)

    Li Yanbo; Zhang Yang; Zhang Yuwei; Wang Baoqiang; Zhu Zhanping; Zeng Yiping

    2012-01-01

    We report on the growth of GaSb layers on GaAs (0 0 1) substrates by molecular beam epitaxy (MBE). We investigate the influence of the GaAs substrate surface treatment, growth temperature, and V/III flux ratios on the crystal quality and the surface morphology of GaSb epilayers. Comparing to Ga-rich GaAs surface preparation, the Sb-rich GaAs surface preparation can promote the growth of higher-quality GaSb material. It is found that the crystal quality, electrical properties, and surface morphology of the GaSb epilayers are highly dependent on the growth temperature, and Sb/Ga flux ratios. Under the optimized growth conditions, we demonstrate the epitaxial growth of high quality GaSb layers on GaAs substrates. The p-type nature of the unintentionally doped GaSb is studied and from the growth conditions dependence of the hole concentrations of the GaSb, we deduce that the main native acceptor in the GaSb is the Ga antisite (Ga Sb ) defect.

  6. Substrate and metabolite diffusion within model medium for soft cheese in relation to growth of Penicillium camembertii.

    Science.gov (United States)

    Aldarf, Mazen; Fourcade, Florence; Amrane, Abdeltif; Prigent, Yves

    2006-08-01

    Penicillium camembertii was cultivated on a jellified peptone-lactate based medium to simulate the composition of Camembert cheese. Diffusional limitations due to substrate consumption were not involved in the linear growth recorded during culture, while nitrogen (peptone) limitation accounted for growth cessation. Examination of gradients confirmed that medium neutralization was the consequence of lactate consumption and ammonium production. The diffusion of the lactate assimilated from the core to the rind and that of the ammonium produced from the rind to the core was described by means of a diffusion/reaction model involving a partial linking of consumption or production to growth. The model matched experimental data throughout growth.

  7. Growth of nano hexagon-like flake arrays cerium carbonate created with PAH as the substrate

    Energy Technology Data Exchange (ETDEWEB)

    Li, M., E-mail: limei@imust.cn [School of Materials Science and Engineering, Beijing University of Chemical Engineering, Department of Materials, Beijing 100029 (China); School of Materials and Metallurgy, Inner Mongolia University of Science and Technology, Department of Inorganic and Metalloid Materials, Key Laboratory of New Technologies of Modern Metallurgy and Application of Rare Materials, Baotou 014010 (China); Hu, Y.H., E-mail: bthyh@163.com [School of Materials Science and Engineering, Beijing University of Chemical Engineering, Department of Materials, Beijing 100029 (China); School of Materials and Metallurgy, Inner Mongolia University of Science and Technology, Department of Inorganic and Metalloid Materials, Key Laboratory of New Technologies of Modern Metallurgy and Application of Rare Materials, Baotou 014010 (China); Liu, Z.G.; Wang, X.F.; Wang, M.T. [School of Materials and Metallurgy, Inner Mongolia University of Science and Technology, Department of Inorganic and Metalloid Materials, Key Laboratory of New Technologies of Modern Metallurgy and Application of Rare Materials, Baotou 014010 (China)

    2015-01-15

    Petals-like Ce{sub 2}(CO{sub 3}){sub 3} on Ce{sub 2}(CO{sub 3}){sub 3} nano hexagon-like flake arrays have been precipitatingly fabricated using PAH substrates. By changing the way of feeding, PAH concentration and aging time, petals-like Ce{sub 2}(CO{sub 3}){sub 3} was created best when adding PAH into the Ce(NO{sub 3}){sub 3} solution, joined (NH{sub 4}){sub 2}CO{sub 3} solution along with mixing, PAH concentration is 0.9 g/L, aging time is 4 h. A growth mechanism was proposed to account for the growth of the petals-like Ce{sub 2}(CO{sub 3}){sub 3} with PAH as the substrate. Poly allylamine hydrochloride (PAH) is as template agent which forms π-allyl complex with Ce{sup 3+} and controls the morphology of Ce{sub 2}(CO{sub 3}){sub 3} particle. PAH and Ce{sup 3+} form π-allyl complex, and then induce the formation of Ce{sub 2}(CO{sub 3}){sub 3} crystal nucleus. And infrared spectrum analysis verified. XRD show that after adding PAH which is adsorbed on the crystal plane, the growth of Ce{sub 2}(CO{sub 3}){sub 3} crystal is inhibited on (2 4 2), the growth is promoted on (2 0 2) which is differentiated into the new (1 5 1), (2 2 2) is unchanged, Ce{sub 2}(CO{sub 3}){sub 3} crystal is accumulated petals shape by hexagon-like flake. UV absorption spectra show that CeO{sub 2} as prepared precursor Ce{sub 2}(CO{sub 3}){sub 3} after calcinations in air at high temperatures, the petal-like CeO{sub 2} has strong UV absorption and reflection effects, and absorption interval changed significantly by the move to UVA from UVB. - Graphical abstract: Each Ce-atom connects three Cl-atoms and three allyls in three dimensional spaces. To take the plane as a reference plane which is arrayed with three Ce-atom as equilateral triangle. The triangular each vertex is Ce-atom, the triangular center place is Cl-atom, the equilateral triangle which is mutually perpendicular with Ce-triangle surface and the inclined angle is 60° is made up with three Cl-atoms. - Highlights: • Petals

  8. Germanium growth on electron beam lithography patterned Si3N4/Si(001) substrate using molecular beam epitaxy

    Science.gov (United States)

    Sarkar, Subhendu Sinha; Katiyar, Ajit K.; Sarkar, Arijit; Dhar, Achintya; Rudra, Arun; Khatri, Ravinder K.; Ray, Samit Kumar

    2018-04-01

    It is important to investigate the growth dynamics of Ge adatoms under different surface stress regimes of the patterned dielectric to control the selective growth of self-assembled Ge nanostructures on silicon. In the present work, we have studied the growth of Ge by molecular beam epitaxy on nanometer scale patterned Si3N4/Si(001) substrates generated using electron beam lithography. The pitch of the patterns has been varied to investigate its effect on the growth of Ge in comparison to un-patterned Si3N4. For the patterned Si3N4 film, Ge did not desorbed completely from the Si3N4 film and hence no site selective growth pattern is observed. Instead, depending upon the pitch, Ge growth has occurred in different growth modes around the openings in the Si3N4. For the un-patterned substrate, the morphology exhibits the occurrence of uniform 3D clustering of Ge adatoms on Si3N4 film. This variation in the growth modes of Ge is attributed to the variation of residual stress in the Si3N4 film for different pitch of holes, which has been confirmed theoretically through Comsol Multiphysics simulation. The variation in stress for different pitches resulted in modulation of surface energy of the Si3N4 film leading to the different growth modes of Ge.

  9. Remote and direct plasma regions for low-temperature growth of carbon nanotubes on glass substrates for display applications

    International Nuclear Information System (INIS)

    Tabatabaei, M K; Ghafouri fard, H; Koohsorkhi, J; Khatami, S; Mohajerzadeh, S

    2011-01-01

    A novel method for growing carbon nanotubes (CNTs) on glass substrates is introduced in this study. A two-stage plasma was used to achieve low-temperature and vertically aligned CNTs. Ni deposited on indium tin oxide/glass substrate was used as the catalyst and hydrogen and acetylene were used as gas feeds. In this investigation a new technique was developed to grow vertically aligned CNTs at temperatures below 400 deg. C while CNT growth by plasma-enhanced chemical vapour deposition required high temperatures. Low-temperature growth of vertically aligned CNTs was suitable for the fabrication of micro-lens and self-oriented displays on glass substrates. Also, we have reported a new configuration for CNT-based display by means of controlling the refractive index of liquid crystal around the CNT by applying a proper voltage to the top and bottom array.

  10. Epitaxial growth of YBa2Cu3O7-δ thin films on LiNbO3 substrates

    International Nuclear Information System (INIS)

    Lee, S.G.; Koren, G.; Gupta, A.; Segmuller, A.; Chi, C.C.

    1989-01-01

    In situ epitaxial growth of YBa 2 Cu 3 O 7-δ thin films on Y-cut LiNbO 3 substrates using a standard laser ablation technique is reported. Resistance of the films shows a normal metallic behavior and a very sharp ( c (R=0) of 92 K. High critical current density of J c (77 K)=2x10 5 A/cm 2 is observed, which is in accordance with epitaxial growth. Film orientation observed from x-ray diffraction spectra indicates that the c axis is normal to the substrate plane and the a axis is at 45 degree to the [11.0] direction of the hexagonal lattice of the substrate with two domains in mirror image to the (110) plane

  11. Influence of periphyton substrates and rearing density on Liza aurata growth and production in marine nursery ponds

    NARCIS (Netherlands)

    Richard, M.; Maurice, J.T.; Anginot, A.; Paticat, F.; Verdegem, M.C.J.; Hussenot, J.M.E.

    2010-01-01

    The main objectives of this investigation were to test the effects of (i) the presence of periphyton substrates, (ii) rearing density and (iii) supplemental feeding with dry feed on the growth and production of golden mullet (Liza aurata) juveniles. Twenty-six 1 m2-cages were installed in a French

  12. The Effect of Nitrogen Form on pH and Petunia Growth in a WholeTree Substrate

    Science.gov (United States)

    The objective of our research was to investigate the effect of nitrogen form and proportion on peat-lite (PL) and WholeTree (WT) substrate pH and petunia growth. Chipped whole pine trees (consisting of needles, limbs, bark, wood and cones) were obtained from a commercial fuel wood chipping operation...

  13. Biochar increases plant growth and alters microbial communities via regulating the moisture and temperature of green roof substrates.

    Science.gov (United States)

    Chen, Haoming; Ma, Jinyi; Wei, Jiaxing; Gong, Xin; Yu, Xichen; Guo, Hui; Zhao, Yanwen

    2018-09-01

    Green roofs have increasingly been designed and applied to relieve environmental problems, such as water loss, air pollution as well as heat island effect. Substrate and vegetation are important components of green roofs providing ecosystem services and benefiting the urban development. Biochar made from sewage sludge could be potentially used as the substrate amendment for green roofs, however, the effects of biochar on substrate quality and plant performance in green roofs are still unclear. We evaluated the effects of adding sludge biochar (0, 5, 10, 15 and 20%, v/v) to natural soil planted with three types of plant species (ryegrass, Sedum lineare and cucumber) on soil properties, plant growth and microbial communities in both green roof and ground ecosystems. Our results showed that sludge biochar addition significantly increased substrate moisture, adjusted substrate temperature, altered microbial community structure and increased plant growth. The application rate of 10-15% sludge biochar on the green roof exerted the most significant effects on both microbial and plant biomass by 63.9-89.6% and 54.0-54.2% respectively. Path analysis showed that biochar addition had a strong effect on microbial biomass via changing the soil air-filled porosity, soil moisture and temperature, and promoted plant growth through the positive effects on microbial biomass. These results suggest that the applications of biochar at an appropriate rate can significantly alter plant growth and microbial community structure, and increase the ecological benefits of green roofs via exerting effects on the moisture, temperature and nutrients of roof substrates. Copyright © 2018 Elsevier B.V. All rights reserved.

  14. Properties of nickel films growth by radio frequency magnetron sputtering at elevated substrate temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Muslim, Noormariah, E-mail: 14h8702@ubd.edu.bn [Centre for Advanced Material and Energy Sciences, Universiti Brunei Darussalam, Jalan Tungku Link, Gadong BE1410 (Brunei Darussalam); Soon, Ying Woan [Centre for Advanced Material and Energy Sciences, Universiti Brunei Darussalam, Jalan Tungku Link, Gadong BE1410 (Brunei Darussalam); Physical and Geological Sciences, Faculty of Science, Universiti Brunei Darussalam, Jalan Tungku Link, Gadong BE1410 (Brunei Darussalam); Lim, Chee Ming; Voo, Nyuk Yoong [Centre for Advanced Material and Energy Sciences, Universiti Brunei Darussalam, Jalan Tungku Link, Gadong BE1410 (Brunei Darussalam)

    2016-08-01

    Pure nickel (Ni) thin films of thicknesses of 100 nm were deposited on glass substrates by radio frequency magnetron sputtering at a power of 100 W and at various substrate temperatures i.e., room temperature, 100, 200, and 300 °C. The crystalline structure, surface topography, surface morphology, electrical resistivity, and optical properties of the deposited films were studied. The properties of the Ni films could be controlled by altering the substrate temperature. Specifically, the films featured a face-centered cubic crystalline structure with predominant (111) crystallite orientation at all the substrate temperatures employed, as observed from the X-ray diffraction analysis. Films deposited at substrate temperatures greater than 200 °C additionally displayed crystalline (200) and (220) diffraction peaks. The surface morphology analysis revealed that the grain size of the Ni thin films increased with increasing substrate temperatures employed. This increase was accompanied with a decrease in the resistivity of the Ni films. The surface roughness of the films increased with increasing substrate temperatures employed, as observed from the atomic force microscopy analysis. - Highlights: • RF magnetron sputtering is a good alternative method to deposit Ni films. • Properties of Ni films could be controlled simply by tuning substrate temperatures. • Crystallite size and surface roughness increased with substrate temperatures. • Electrical resistivity reduced with increasing substrate temperatures. • Optical properties also changed with substrate temperatures.

  15. Growth and characterization of AlxGa1-xN LEO substrates

    International Nuclear Information System (INIS)

    Paek, H.S.; Sakong, T.; Lee, S.N.; Son, J.K.; Ryu, H.Y.; Nam, O.H.; Park, Y.

    2006-01-01

    We have studied the effect of Al composition on the properties of Al x Ga 1-x N LEO substrates. Al x Ga 1-x N LEO substrates were prepared on stripe-patterned 2μm-thick undoped GaN/sapphire substrates by metalorganic chemical vapor deposition. To investigate the dislocation and crack density, and the surface morphology of Al x Ga 1-x N LEO substrates with different Al compositions, photoluminescence and optical microscope were used. At a 1% of Al composition, we obtained crack-free and mirror-like substrates having a low dislocation density of ∼1E6cm -2 . We expect considerable reduction in threshold current density to be achieved from blue-violet laser diodes grown on Al x Ga 1-x N LEO substrates because of the increased optical gain, as compared to the laser diodes grown on Al-free LEO substrates

  16. Direct growth of graphene on quartz substrates for label-free detection of adenosine triphosphate

    International Nuclear Information System (INIS)

    Xu, Shicai; Man, Baoyuan; Jiang, Shouzhen; Yue, Weiwei; Yang, Cheng; Liu, Mei; Chen, Chuansong; Zhang, Chao

    2014-01-01

    We demonstrate that continuous, uniform graphene films can be directly synthesized on quartz substrates using a two-temperature-zone chemical vapor deposition system and that their layers can be controlled by adjusting the precursor partial pressure. Raman spectroscopy and transmission electron microscopy confirm the formation of monolayer graphene with a grain size of ∼100 nm. Hall measurements show a room-temperature carrier mobility above 1500 cm 2  V −1  s −1 . The optical transmittance and conductance of the graphene films are comparable to those of transferred metal-catalyzed graphene. The method avoids the complicated and skilled post-growth transfer process and allows the graphene to be directly incorporated into a fully functional biosensor for label-free detection of adenosine triphosphate (ATP). This device shows a fast response time of a few milliseconds and achieves a high sensitivity to ATP molecules over a very wide range from 0.002 to 5 mM. (paper)

  17. High Performance Bioanode Development for Fermentable Substrates via Controlled Electroactive Biofilm Growth

    Energy Technology Data Exchange (ETDEWEB)

    Ichihashi, Osamu [ORNL; Vishnivetskaya, Tatiana A [ORNL; Borole, Abhijeet P [ORNL

    2014-11-11

    A bioanode was optimized to generate current densities reaching 38.4 4.9 A m-2, which brings bioelectrochemical systems closer to commercial consideration. Glucose and lactate were fed together in a continuous or fed-batch mode. The current density increased from 2.3 A m-2 to 38.4 A m-2 over a 33 day period and remained stable thereafter. The coulombic efficiency ranged from 50% to 80%. A change in substrate concentration from 200 mg L-1 to 5 mg L-1 decreased maximum current density from 38.4 A m-2 to 12.3 A m-2. The anode consortia included Firmicutes (55.0%), Proteobacteria (41.8%) and Bacteroidetes (2.1%) constituting two potential electrogenic genera: Geobacter (6.8%) and Aeromonas (31.9%). The current production was found to be limited by kinetics during the growth period (33 days), and mass transfer, thereafter. The results indicate the necessity of removing spent biomass for efficient long term operation and treatment of wastewater streams.

  18. The controlled growth of GaN microrods on Si(111) substrates by MOCVD

    Science.gov (United States)

    Foltynski, Bartosz; Garro, Nuria; Vallo, Martin; Finken, Matthias; Giesen, Christoph; Kalisch, Holger; Vescan, Andrei; Cantarero, Andrés; Heuken, Michael

    2015-03-01

    In this paper, a selective area growth (SAG) approach for growing GaN microrods on patterned SiNx/Si(111) substrates by metal-organic chemical vapor deposition (MOCVD) is studied. The surface morphology, optical and structural properties of vertical GaN microrods terminated by pyramidal shaped facets (six { 10 1 bar 1} planes) were characterized using scanning electron microscopy (SEM), room temperature photoluminescence (PL) and Raman spectroscopy, respectively. Measurements revealed high-quality GaN microcolumns grown with silane support. Characterized structures were grown nearly strain-free (central frequency of Raman peak of 567±1 cm-1) with crystal quality comparable to bulk crystals (FWHM=4.2±1 cm-1). Such GaN microrods might be used as a next-generation device concept for solid-state lighting (SSL) applications by realizing core-shell InGaN/GaN multi-quantum wells (MQWs) on the n-GaN rod base.

  19. Highly Oriented Growth of Catalytically Active Zeolite ZSM-5 Films with a Broad Range of Si/Al Ratios.

    Science.gov (United States)

    Fu, Donglong; Schmidt, Joel E; Ristanović, Zoran; Chowdhury, Abhishek Dutta; Meirer, Florian; Weckhuysen, Bert M

    2017-09-04

    Highly b-oriented zeolite ZSM-5 films are critical for applications in catalysis and separations and may serve as models to study diffusion and catalytic properties in single zeolite channels. However, the introduction of catalytically active Al 3+ usually disrupts the orientation of zeolite films. Herein, using structure-directing agents with hydroxy groups, we demonstrate a new method to prepare highly b-oriented zeolite ZSM-5 films with a broad range of Si/Al ratios (Si/Al=45 to ∞). Fluorescence micro-(spectro)scopy was used to monitor misoriented microstructures, which are invisible to X-ray diffraction, and show Al 3+ framework incorporation and illustrate the differences between misoriented and b-oriented films. The methanol-to-hydrocarbons process was studied by operando UV/Vis diffuse reflectance micro-spectroscopy with on-line mass spectrometry, showing that the b-oriented zeolite ZSM-5 films are active and stable under realistic process conditions. © 2017 The Authors. Published by Wiley-VCH Verlag GmbH & Co. KGaA.

  20. Atomic force microscopy investigation of growth process of organic TCNQ aggregates on SiO2 and mica substrates

    Science.gov (United States)

    Huan, Qing; Hu, Hao; Pan, Li-Da; Xiao, Jiang; Du, Shi-Xuan; Gao, Hong-Jun

    2010-08-01

    Deposition patterns of tetracyanoquinodimethane (TCNQ) molecules on different surfaces are investigated by atomic force microscopy. A homemade physical vapour deposition system allows the better control of molecule deposition. Taking advantage of this system, we investigate TCNQ thin film growth on both SiO2 and mica surfaces. It is found that dense island patterns form at a high deposition rate, and a unique seahorse-like pattern forms at a low deposition rate. Growth patterns on different substrates suggest that the fractal pattern formation is dominated by molecule-molecule interaction. Finally, a phenomenal “two-branch" model is proposed to simulate the growth process of the seahorse pattern.

  1. Atomic force microscopy investigation of growth process of organic TCNQ aggregates on SiO2 and mica substrates

    International Nuclear Information System (INIS)

    Qing, Huan; Hao, Hu; Li-Da, Pan; Jiang, Xiao; Shi-Xuan, Du; Hong-Jun, Gao

    2010-01-01

    Deposition patterns of tetracyanoquinodimethane (TCNQ) molecules on different surfaces are investigated by atomic force microscopy. A homemade physical vapour deposition system allows the better control of molecule deposition. Taking advantage of this system, we investigate TCNQ thin film growth on both SiO 2 and mica surfaces. It is found that dense island patterns form at a high deposition rate, and a unique seahorse-like pattern forms at a low deposition rate. Growth patterns on different substrates suggest that the fractal pattern formation is dominated by molecule–molecule interaction. Finally, a phenomenal “two-branch” model is proposed to simulate the growth process of the seahorse pattern. (general)

  2. A novel, substrate independent three-step process for the growth of uniform ZnO nanorod arrays

    International Nuclear Information System (INIS)

    Byrne, D.; McGlynn, E.; Henry, M.O.; Kumar, K.; Hughes, G.

    2010-01-01

    We report a three-step deposition process for uniform arrays of ZnO nanorods, involving chemical bath deposition of aligned seed layers followed by nanorod nucleation sites and subsequent vapour phase transport growth of nanorods. This combines chemical bath deposition techniques, which enable substrate independent seeding and nucleation site generation with vapour phase transport growth of high crystalline and optical quality ZnO nanorod arrays. Our data indicate that the three-step process produces uniform nanorod arrays with narrow and rather monodisperse rod diameters (∼ 70 nm) across substrates of centimetre dimensions. X-ray photoelectron spectroscopy, scanning electron microscopy and X-ray diffraction were used to study the growth mechanism and characterise the nanostructures.

  3. Effects of substrate anisotropy and edge diffusion on submonolayer growth during molecular beam epitaxy: A Kinetic Monte Carlo study

    International Nuclear Information System (INIS)

    Devkota, J.; Shrestha, S.P.

    2007-12-01

    We have performed Kinetic Monte Carlo simulation work to study the effect of diffusion anisotropy, bonding anisotropy and edge diffusion on island formation at different temperatures during the sub-monolayer film growth in Molecular Beam Epitaxy. We use simple cubic solid on solid model and event based Bortz, Kalos and Labowitch (BKL) algorithm on the Kinetic Monte Carlo method to simulate the physical phenomena. We have found that the island morphology and growth exponent are found to be influenced by substrate anisotropy as well as edge diffusion, however they do not play a significant role in island elongation. The growth exponent and island size distribution are observed to be influenced by substrate anisotropy but are negligibly influenced by edge diffusion. We have found fractal islands when edge diffusion is excluded and compact islands when edge diffusion is included. (author)

  4. Effects of water depth and substrate color on the growth and body color of the red sea cucumber, Apostichopus japonicus

    Science.gov (United States)

    Jiang, Senhao; Dong, Shuanglin; Gao, Qinfeng; Ren, Yichao; Wang, Fang

    2015-05-01

    Three color variants of the sea cucumber, Apostichopus japonicus are recognized, the red one is highly valued in the market. When the red variant is cultured in ponds in China, its body color changes from red to celadon in 3-6 months. The effects of water depth and substrate color on the growth and body color of this animal were investigated. Juveniles of red A. japonicus were cultured in cages suspended at a range of water depths (20, 50, 100, 150 and 200 cm). The specific growth rate of red sea cucumbers was significantly higher in animals cultured at deeper water layers compared with those grown at shallowers. Body weights were greatest for sea cucumbers cultured at a depth of 150 cm and their survival rates were highest at a depth of 200 cm. A scale to evaluate the color of red sea cucumbers ( R value) was developed using a Pantone standard color card. All stocked animals in the 9-month trial retained a red color, however the red body color was much more intense in sea cucumbers cultured at shallower depths, while animals suspended in deeper layers became pale. In a separate trial, A. japonicus were cultured in suspended cages with seven different colored substrates. Substrate color had a significant effect on the growth and body-color of red A. japonicus. The yield were greatest for A. japonicus cultured on a yellow substrate, followed by green > white > orange > red > black and blue. All sea cucumbers in the 7-month trial retained a red color, although the red was most intense (highest R value) in animals cultured on a blue substrate and pale (lowest R value) for animals cultured on a green substrate.

  5. Epitaxial growth of manganese oxide films on MgAl2O4 (001) substrates and the possible mechanism

    Science.gov (United States)

    Ren, Lizhu; Wu, Shuxiang; Zhou, Wenqi; Li, Shuwei

    2014-03-01

    Three types of manganese oxide films were grown on MgAl2O4 (001) substrates by plasma-assisted molecular beam epitaxy (PA-MBE) under different growth rates and substrate temperatures. The structural characteristics and chemical compositions of the films were investigated by using in-situ reflection high-energy electron diffraction (RHEED), ex-situ X-ray diffraction, Raman, and X-ray photoelectron spectra (XPS). At a lower substrate temperature (730 K), the epitaxial film tends to form mixed phases with a coexistence of Mn3O4 and Mn5O8 in order to relieve the mismatch-strain. However, at a higher substrate temperature (750 K), all of the films crystallize into Mn3O4; the critical thickness of the film grown under a lower growth rate (7 Å/min) is much larger than that under a high growth rate (10 Å/min). When the film reaches a certain critical thickness, the surface will become fairly rough, and another oriented phase Mn3O4 would crystallize on such a surface.

  6. Plasma assisted growth of MoO{sub 3} films on different substrate locations relative to sublimation source

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, Rabindar K., E-mail: rkrksharma6@gmail.com; Saini, Sujit K.; Kumar, Prabhat; Singh, Megha; Reddy, G. B. [Thin film laboratory, Department of Physics, Indian Institute of Technology Delhi, New Delhi – 110016 (India)

    2016-05-06

    In the present paper, we reported the role of substrate locations relative to source on the growth of MoO{sub 3} films deposited on Ni coated glass substrates using plasma assisted sublimation process (PASP). According to the XRD and SEM results, substrate location is very crucial factor to control the morphology of MoO{sub 3} films and the best nanostructure growth (in terms of alignments and features) is obtained in case of Sample B (in which substrate is placed on source). The structural results point out that all films exhibit only orthorhombic phase of molybdenum oxide (i.e. α-MoO{sub 3})but the most preferential growth is recorded in Sample B due to the presence of intense peaks crossponding to only (0 k 0) family of crystal planes (k = 2, 4,6..). The Raman analysis again confirms the orthorhombic nature of MoO{sub 3} NFs and details of vibrational bondsin Sample B have been given in the present report. The MoO{sub 3} NFs show intense PL emission in wavelength range of 300-700 nm with three peaks located at 415, 490, and 523 nm in accordance to the improved crystallinity in Sample B.

  7. Experimental and simulation study of growth of TiO2 films on different substrates and its applications

    Science.gov (United States)

    Ghogare, Trupti T.; Kartha, Moses J.; Kendre, Subhash D.; Pathan, Habib M.

    2018-04-01

    Monte-Carlo Ballistic Deposition simulations have done on substrates with different initial roughness. The grown films were observed to be porous. The initial growths of the films with seed like initiations are observed for substrate with high initial roughness. In order to confirm this effect TiO2 films were deposited on different substrates using chemical bath deposition. The surface morphological and optical properties were measured using scanning electron microscopy and a UV-Vis spectrophotometer. Flower like porous structure are obtained on glass substrate and continuous porous morphology is formed on ITO substrate. The morphology of the surfaces was successfully reconstructed and the surface porosity was calculated after digitalising images and reconstructed the surfaces. The TiO2 film formed on ITO is observed to be 10% more porous than on the film formed on glass substrate. Diffusion Limited Aggregation simulations with multiple seeds confirms that the observed flower like structure formed are due to the screening effects of the diffusing ion by already deposited particles.

  8. MBE growth and characterization of GaAs1-x Sb x epitaxial layers on Si (0 0 1) substrates

    International Nuclear Information System (INIS)

    Toda, T.; Nishino, F.; Kato, A.; Kambayashi, T.; Jinbo, Y.; Uchitomi, N.

    2006-01-01

    We investigated the growth of GaAs 1- x Sb x (x=1.0, 0.82, 0.69, 0.44, 0.0) layers on Si (0 0 1) substrates using AlSb as a buffer layer. Epilayers were grown as a function of As beam equivalent pressure (BEP) under a constant Sb BEP, and they were then characterized by atomic force microscopy (AFM), X-ray diffraction (XRD), and micro-Raman scattering analysis. We confirmed that GaAs 1- x Sb x layers have been successfully grown on Si substrates by introducing AlSb layers

  9. The broad-spectrum antiviral compound ST-669 restricts chlamydial inclusion development and bacterial growth and localizes to host cell lipid droplets within treated cells.

    Science.gov (United States)

    Sandoz, Kelsi M; Valiant, William G; Eriksen, Steven G; Hruby, Dennis E; Allen, Robert D; Rockey, Daniel D

    2014-07-01

    Novel broad-spectrum antimicrobials are a critical component of a strategy for combating antibiotic-resistant pathogens. In this study, we explored the activity of the broad-spectrum antiviral compound ST-669 for activity against different intracellular bacteria and began a characterization of its mechanism of antimicrobial action. ST-669 inhibits the growth of three different species of chlamydia and the intracellular bacterium Coxiella burnetii in Vero and HeLa cells but not in McCoy (murine) cells. The antichlamydial and anti-C. burnetii activity spectrum was consistent with those observed for tested viruses, suggesting a common mechanism of action. Cycloheximide treatment in the presence of ST-669 abrogated the inhibitory effect, demonstrating that eukaryotic protein synthesis is required for tested activity. Immunofluorescence microscopy demonstrated that different chlamydiae grow atypically in the presence of ST-669, in a manner that suggests the compound affects inclusion formation and organization. Microscopic analysis of cells treated with a fluorescent derivative of ST-669 demonstrated that the compound localized to host cell lipid droplets but not to other organelles or the host cytosol. These results demonstrate that ST-669 affects intracellular growth in a host-cell-dependent manner and interrupts proper development of chlamydial inclusions, possibly through a lipid droplet-dependent process. Copyright © 2014, American Society for Microbiology. All Rights Reserved.

  10. Three-dimensionally structured silicon as a substrate for the MOVPE growth of GaN nanoLEDs

    Energy Technology Data Exchange (ETDEWEB)

    Fuendling, Soenke; Li, Shunfeng; Soekmen, Uensal; Merzsch, Stephan; Peiner, Erwin; Wehmann, Hergo-Heinrich; Waag, Andreas [Institut fuer Halbleitertechnik, TU Braunschweig, Braunschweig (Germany); Hinze, Peter; Weimann, Thomas [Physikalisch-Technische Bundesanstalt (PTB), Braunschweig (Germany); Jahn, Uwe; Trampert, Achim; Riechert, Henning [Paul-Drude-Institut fuer Festkoerperelektronik, Berlin (Germany)

    2009-06-15

    Three-dimensionally patterned Si(111) substrates are used to grow GaN based heterostructures by metalorganic vapour phase epitaxy, with the goal of fabricating well controlled, defect reduced GaN-based nanoLEDs. In contrast to other approaches to achieve GaN nanorods, we employed silicon substrates with deep etched nanopillars to control the GaN nanorods growth by varying the size and distance of the Si pillars. The small footprint of GaN nanorods grown on Si pillars minimise the influence of the lattice mismatched substrate and improve the material quality. For the Si pillars an inductively coupled plasma dry-etching process at cryogenic temperature has been developed. An InGaN/GaN multi quantum well (MQW) structure has been incorporated into the GaN nanorods. We found GaN nanostructures grown on top of the silicon pillars with a pyramidal shape. This shape results from a competitive growth on different facets as well as from surface diffusion of the growth species. Spatially resolved optical properties of the structures are analysed by cathodoluminescence. Strongly spatial-dependent MQW emission spectra indicate the growth rate differences on top of the rods. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  11. Thermal oxidation of seeds for the hydrothermal growth of WO{sub 3} nanorods on ITO glass substrate

    Energy Technology Data Exchange (ETDEWEB)

    Ng, Chai Yan [School of Materials and Mineral Resources Engineering, Universiti Sains Malaysia, 14300 Nibong Tebal, Penang (Malaysia); Department of Mechanical and Material Engineering, Lee Kong Chian Faculty of Engineering and Science, Universiti Tunku Abdul Rahman, Jalan Sungai Long, Bandar Sungai Long, Cheras, 43000 Kajang, Selangor (Malaysia); Abdul Razak, Khairunisak, E-mail: khairunisak@usm.my [School of Materials and Mineral Resources Engineering, Universiti Sains Malaysia, 14300 Nibong Tebal, Penang (Malaysia); NanoBiotechnology Research and Innovation (NanoBRI), Institute for Research in Molecular Medicine (INFORMM), Universiti Sains Malaysia, 11800 USM, Penang (Malaysia); Lockman, Zainovia, E-mail: zainovia@usm.my [School of Materials and Mineral Resources Engineering, Universiti Sains Malaysia, 14300 Nibong Tebal, Penang (Malaysia)

    2015-11-30

    This work reports a simple seed formation method for the hydrothermal growth of tungsten oxide (WO{sub 3}) nanorods. A WO{sub 3} seed layer was prepared by thermal oxidation, where a W-sputtered substrate was heated and oxidized in a furnace. Oxidation temperatures and periods were varied at 400–550 °C and 5–60 min, respectively, to determine an appropriate seed layer for nanorod growth. Thermal oxidation at 500 °C for 15 min was found to produce a seed layer with sufficient crystallinity and good adhesion to the substrate. These properties prevented the seed from peeling off during the hydrothermal process, thereby allowing nanorod growth on the seed. The nanorod film showed better electrochromic behavior (higher current density of − 1.11 and + 0.65 mA cm{sup −2}) than compact film (lower current density of − 0.54 and + 0.28 mA cm{sup −2}). - Highlights: • A simple seed formation method (thermal oxidation) on sputtered W film is reported. • Crystalline seed with good adhesion to substrate is required for nanorod growth. • The appropriate temperature and period for seed formation were 500 °C and 15 min. • WO{sub 3} nanorods exhibited higher electrochromic current density than WO{sub 3} compact film.

  12. Structural properties, crystal quality and growth modes of MOCVD-grown AlN with TMAl pretreatment of sapphire substrate

    KAUST Repository

    Sun, Haiding; Wu, Feng; Altahtamouni, Talal Mohammed Ahmad; Alfaraj, Nasir; Li, Kun; Detchprohm, Theeradetch; Dupuis, Russell; Li, Xiaohang

    2017-01-01

    The growth of high quality AlN epitaxial films relies on precise control of the initial growth stages. In this work, we examined the influence of the trimethylaluminum (TMAl) pretreatment of sapphire substrates on the structural properties, crystal quality and growth modes of heteroepitaxial AlN films on (0001) sapphire substrates. Without the pretreatment, the AlN films nucleated on the smooth surface but exhibited mixed crystallographic Al- (N-) polarity, resulting in rough AlN film surfaces. With increasing the pretreatment time from 1 to 5 s, the N-polarity started to be impeded. However, small islands were formed on sapphire surface due to the decompostion of TMAl. As a result, small voids became noticeable at the nucleation layer (NL) because the growth started as quasi three-dimensional (3D) but transformed to 2D mode as the film grew thicker and got coalesced, leading to smoother and Al-polar films. On the other hand, longer pretreatment time of 40 s formed large 3D islands on sapphire, and thus initiated a 3D-growth mode of the AlN film, generating Al-polar AlN nanocolumns with different facets, which resulted into rougher film surfaces. The epitaxial growth modes and their correlation with the AlN film crystal quality under different TMAl pretreatments are also discussed.

  13. Structural properties, crystal quality and growth modes of MOCVD-grown AlN with TMAl pretreatment of sapphire substrate

    KAUST Repository

    Sun, Haiding

    2017-08-08

    The growth of high quality AlN epitaxial films relies on precise control of the initial growth stages. In this work, we examined the influence of the trimethylaluminum (TMAl) pretreatment of sapphire substrates on the structural properties, crystal quality and growth modes of heteroepitaxial AlN films on (0001) sapphire substrates. Without the pretreatment, the AlN films nucleated on the smooth surface but exhibited mixed crystallographic Al- (N-) polarity, resulting in rough AlN film surfaces. With increasing the pretreatment time from 1 to 5 s, the N-polarity started to be impeded. However, small islands were formed on sapphire surface due to the decompostion of TMAl. As a result, small voids became noticeable at the nucleation layer (NL) because the growth started as quasi three-dimensional (3D) but transformed to 2D mode as the film grew thicker and got coalesced, leading to smoother and Al-polar films. On the other hand, longer pretreatment time of 40 s formed large 3D islands on sapphire, and thus initiated a 3D-growth mode of the AlN film, generating Al-polar AlN nanocolumns with different facets, which resulted into rougher film surfaces. The epitaxial growth modes and their correlation with the AlN film crystal quality under different TMAl pretreatments are also discussed.

  14. Investigation of growth, structural and electronic properties of V2O3 thin films on selected substrates

    International Nuclear Information System (INIS)

    Nateprov, Alexei

    2006-08-01

    The present work is devoted to the experimental study of the MI transition in V 2 O 3 thin films, grown on different substrates. The main goal of the work was to develop a technology of growth of V 2 O 3 thin films on substrates with different electrical and structural properties (diamond and LiNbO 3 ), designed for specific applications. The structural and electrical properties of the obtained films were characterized in detail with a special focus on their potential applications. The MIT of V 2 O 3 was investigated by SAW using first directly deposited V 2 O 3 thin film onto a LiNbO 3 substrate. (orig.)

  15. The effect of substrate orientation on the kinetics and thermodynamics of initial oxide-film growth on metals

    Energy Technology Data Exchange (ETDEWEB)

    Reichel, Friederike

    2007-11-19

    This thesis addresses the effect of the parent metal-substrate orientation on the thermodynamics and kinetics of ultra-thin oxide-film growth on bare metals upon their exposure to oxygen gas at low temperatures (up to 650 K). A model description has been developed to predict the thermodynamically stable microstructure of a thin oxide film grown on its bare metal substrate as function of the oxidation conditions and the substrate orientation. For Mg and Ni, the critical oxide-film thickness is less than 1 oxide monolayer and therefore the initial development of an amorphous oxide phase on these metal substrates is unlikely. Finally, for Cu and densely packed Cr and Fe metal surfaces, oxide overgrowth is predicted to proceed by the direct formation and growth of a crystalline oxide phase. Further, polished Al single-crystals with {l_brace}111{r_brace}, {l_brace}100{r_brace} and {l_brace}110{r_brace} surface orientations were introduced in an ultra-high vacuum system for specimen processing and analysis. After surface cleaning and annealing, the bare Al substrates have been oxidized by exposure to pure oxygen gas. During the oxidation, the oxide-film growth kinetics has been established by real-time in-situ spectroscopic ellipsometry. After the oxidation, the oxide-film microstructures were investigated by angle-resolved X-ray photoelectron spectroscopy and low energy electron diffraction. Finally, high-resolution transmission electron microscopic analysis was applied to study the microstructure and morphology of the grown oxide films on an atomic scale. (orig.)

  16. Combining affinity proteomics and network context to identify new phosphatase substrates and adapters in growth pathways.

    Directory of Open Access Journals (Sweden)

    Francesca eSacco

    2014-05-01

    Full Text Available Protein phosphorylation homoeostasis is tightly controlled and pathological conditions are caused by subtle alterations of the cell phosphorylation profile. Altered levels of kinase activities have already been associated to specific diseases. Less is known about the impact of phosphatases, the enzymes that down-regulate phosphorylation by removing the phosphate groups. This is partly due to our poor understanding of the phosphatase-substrate network. Much of phosphatase substrate specificity is not based on intrinsic enzyme specificity with the catalytic pocket recognizing the sequence/structure context of the phosphorylated residue. In addition many phosphatase catalytic subunits do not form a stable complex with their substrates. This makes the inference and validation of phosphatase substrates a non-trivial task. Here, we present a novel approach that builds on the observation that much of phosphatase substrate selection is based on the network of physical interactions linking the phosphatase to the substrate. We first used affinity proteomics coupled to quantitative mass spectrometry to saturate the interactome of eight phosphatases whose down regulations was shown to affect the activation of the RAS-PI#K pathway. By integrating information from functional siRNA with protein interaction information, we develop a strategy that aims at inferring phosphatase physiological substrates. Graph analysis is used to identify protein scaffolds that may link the catalytic subunits to their substrates. By this approach we rediscover several previously described phosphatase substrate interactions and characterize two new protein scaffolds that promote the dephosphorylation of PTPN11 and ERK by DUSP18 and DUSP26 respectively.

  17. Arbuscular Mycorrhiza Improves Substrate Hydraulic Conductivity in the Plant Available Moisture Range Under Root Growth Exclusion.

    Science.gov (United States)

    Bitterlich, Michael; Franken, Philipp; Graefe, Jan

    2018-01-01

    Arbuscular mycorrhizal fungi (AMF) proliferate in soils and are known to affect soil structure. Although their contribution to structure is extensively investigated, the consequences of those processes for soil water extractability and transport has, so far, gained surprisingly little attention. Therefore we asked, whether AMF can affect water retention and unsaturated hydraulic conductivity under exclusion of root ingrowth, in order to minimize plant driven effects. We carried out experiments with tomato inoculated with Rhizoglomus irregulare in a soil substrate with sand and vermiculite that created variation in colonization by mixed pots with wild type (WT) plants and mycorrhiza resistant (RMC) mutants. Sampling cores were introduced and used to assess substrate moisture retention dynamics and modeling of substrate water retention and hydraulic conductivity. AMF reduced the saturated water content and total porosity, but maintained air filled porosity in soil spheres that excluded root ingrowth. The water content between field capacity and the permanent wilting point (6-1500 kPa) was only reduced in mycorrhizal substrates that contained at least one RMC mutant. Plant available water contents correlated positively with soil protein contents. Soil protein contents were highest in pots that possessed the strongest hyphal colonization, but not significantly affected. Substrate conductivity increased up to 50% in colonized substrates in the physiologically important water potential range between 6 and 10 kPa. The improvements in hydraulic conductivity are restricted to substrates where at least one WT plant was available for the fungus, indicating a necessity of a functional symbiosis for this effect. We conclude that functional mycorrhiza alleviates the resistance to water movement through the substrate in substrate areas outside of the root zone.

  18. Crystallization and growth of Ni-Si alloy thin films on inert and on silicon substrates

    Science.gov (United States)

    Grimberg, I.; Weiss, B. Z.

    1995-04-01

    The crystallization kinetics and thermal stability of NiSi2±0.2 alloy thin films coevaporated on two different substrates were studied. The substrates were: silicon single crystal [Si(100)] and thermally oxidized silicon single crystal. In situ resistance measurements, transmission electron microscopy, x-ray diffraction, Auger electron spectroscopy, and Rutherford backscattering spectroscopy were used. The postdeposition microstructure consisted of a mixture of amorphous and crystalline phases. The amorphous phase, independent of the composition, crystallizes homogeneously to NiSi2 at temperatures lower than 200 °C. The activation energy, determined in the range of 1.4-2.54 eV, depends on the type of the substrate and on the composition of the alloyed films. The activation energy for the alloys deposited on the inert substrate was found to be lower than for the alloys deposited on silicon single crystal. The lowest activation energy was obtained for nonstoichiometric NiSi2.2, the highest for NiSi2—on both substrates. The crystallization mode depends on the structure of the as-deposited films, especially the density of the existing crystalline nuclei. Substantial differences were observed in the thermal stability of the NiSi2 compound on both substrates. With the alloy films deposited on the Si substrate, only the NiSi2 phase was identified after annealing to temperatures up to 800 °C. In the films deposited on the inert substrate, NiSi and NiSi2 phases were identified when the Ni content in the alloy exceeded 33 at. %. The effects of composition and the type of substrate on the crystallization kinetics and thermal stability are discussed.

  19. Growth and properties of blue/green InGaN/GaN MQWs on Si(111) substrates

    International Nuclear Information System (INIS)

    Lee, Kang Jea; Oh, Tae Su; Kim, Tae Ki; Yang, Gye Mo; Lim, Kee Young

    2005-01-01

    InGaN/GaN multiple quantum wells (MQWs) were grown on highly tensile-strained GaN films on Si(111) substrate by metalorganic chemical vapor deposition. Due to the large difference of lattice constant and thermal expansion coefficient between GaN and Si, GaN growth on Si(111) substrate usually leads to an initially high dislocation density and cracks. We demonstrate low dislocation-density and crack-free GaN films grown on Si(111) substrate by introducing an AlN/GaN strain-compensation layer and Si x N y dislocation masking layer. Blue/green-emitting InGaN/GaN MQW heterostructures have been successfully grown on Si(111) substrates. Two sets of InGaN/GaN MQWs with different In solid composition and number of pairs grown between 820 .deg. C and 900 .deg. C were studied by high-resolution X-ray diffraction and photoluminescence spectroscopy. The emission wavelengths of InGaN MQW structures were significantly dependent on growth temperature.

  20. Molecular dynamics study of growth and interface structure during aluminum deposition on Ni(1 0 0) substrate

    International Nuclear Information System (INIS)

    er, Laboratory of Radiation and Matter, Faculty of Science and Technology, 26000 Settat (Morocco); Univ Hassan 1er, Laboratory LS3M, Faculté Polydisciplinaire of Khouribga, 26000 Settat (Morocco))" data-affiliation=" (Univ Hassan 1er, Laboratory of Radiation and Matter, Faculty of Science and Technology, 26000 Settat (Morocco); Univ Hassan 1er, Laboratory LS3M, Faculté Polydisciplinaire of Khouribga, 26000 Settat (Morocco))" >Hassani, A.; Makan, A.; er, Laboratory LS3M, Faculté Polydisciplinaire of Khouribga, 26000 Settat (Morocco))" data-affiliation=" (Univ Hassan 1er, Laboratory LS3M, Faculté Polydisciplinaire of Khouribga, 26000 Settat (Morocco))" >Sbiaai, K.; er, Laboratory of Radiation and Matter, Faculty of Science and Technology, 26000 Settat (Morocco))" data-affiliation=" (Univ Hassan 1er, Laboratory of Radiation and Matter, Faculty of Science and Technology, 26000 Settat (Morocco))" >Tabyaoui, A.; er, Laboratory LS3M, Faculté Polydisciplinaire of Khouribga, 26000 Settat (Morocco))" data-affiliation=" (Univ Hassan 1er, Laboratory LS3M, Faculté Polydisciplinaire of Khouribga, 26000 Settat (Morocco))" >Hasnaoui, A.

    2015-01-01

    Highlights: • Aluminum thin film growth on Ni(1 0 0) substrate was investigated. • Molecular dynamics simulation based on EAM interaction potential was considered. • Hexagonal and fourfold structures coexisted in the first layer. • Interface mismatch was revealed by wavy effect occurring in both lateral directions. • Film growth followed a layer-by-layer mode only in the first three deposited layers. - Abstract: We investigate aluminum thin film growth on Ni(1 0 0) substrate by means of molecular dynamics simulation. Embedded Atom Method interaction potential is considered. The simulation is performed at 300 K using an incident energy of 1 eV. The substrate-grown film interface shows the coexistence of hexagonal and fourfold structures in the first layer during the initial stage of deposition. As the deposition proceeds, the hexagonal geometry transforms to fourfold one which becomes dominant toward the end of deposition. The coverage of this layer exceeded 100%. Moreover, the deposited Al atoms with fourfold geometry adopt the lattice parameter of Ni as the thickness of deposited film increases. The interface mismatch investigation revealed that the roughness is dictated by how the Al(1 1 1) fits to the Ni(1 0 0) substrate, which may be reflected by a wavy effect occurring in both lateral directions. Furthermore, the film grows by a layer-by-layer mode with a coverage rate greater than 66.7% in the first three layers, while it follows an island mode with a coverage rate lower than the previous value (66.7%) beyond the third layer. Overall, a detailed analysis of each layer growth has established a relationship between the number of deposited atoms and the coverage rate of each layer

  1. Effect of substrate roughness on growth of diamond by hot filament ...

    Indian Academy of Sciences (India)

    Administrator

    Polycrystalline diamond coatings are grown on Si (100) substrate by hot filament CVD technique. We investigate ... toughness of the film as the crystal changes its phase from monocrystalline to .... is a characteristic of graphite. We mark the.

  2. JORDANIAN ZEOLITIC TUFF AS A RAW MATERIAL FOR THE PREPARATION OF SUBSTRATES USED FOR PLANT GROWTH

    Directory of Open Access Journals (Sweden)

    Ivan Manolov

    2006-07-01

    Full Text Available One of the problems faced in front of industry for potting media is limited amount of quality row materials (mainly peat for unlimited production of quality substrates in the future. The using of natural minerals for production of substrates or as amendments for existing substrates is possible solution for this problem. The natural zeolites with their specific properties – high CEC, high content of macro and microelements are one of good alternatives to the traditional potting media. Each zeolite deposit has unique chemical composition, physical and mechanical properties. That is why obligatory preliminary condition for their successful application in agriculture is caring out of biological study with agricultural plants for determination of the optimal parameters of chemical and physicochemical properties of the substrates.

  3. Growth optimization and characterization of GaN epilayers on multifaceted (111) surfaces etched on Si(100) substrates

    Energy Technology Data Exchange (ETDEWEB)

    Ansah-Antwi, KwaDwo Konadu, E-mail: kakadee@gmail.com; Chua, Soo Jin [Institute of Materials Research and Engineering (IMRE), A*STAR (Agency for Science, Technology and Research), 2 Fusionopolis Way, Innovis # 08-03, Singapore 138634 (Singapore); Department of Electrical and Computer Engineering, National University of Singapore, E4-5-45, 4 Engineering Drive 3, Singapore 117576 (Singapore); Soh, Chew Beng [Singapore Institute of Technology, 10 Dover Drive, Singapore 138683 (Singapore); Liu, Hongfei [Institute of Materials Research and Engineering (IMRE), A*STAR (Agency for Science, Technology and Research), 2 Fusionopolis Way, Innovis # 08-03, Singapore 138634 (Singapore)

    2015-11-15

    The four nearest Si(111) multifaceted sidewalls were exposed inside an array of 3 μm-wide square holes patterned on an Si(100) substrate, and this patterned Si(100) substrate was used as a substrate for the deposition of a gallium nitride (GaN) epilayer. Subsequently the effect that the growth pressure, the etched-hole profiles, and the etched-hole arrangement had upon the quality of the as-grown GaN was investigated. The coalescence of the as-grown GaN epilayer on the exposed Si(111) facets was observed to be enhanced with reduced growth pressure from 120 to 90 Torr. A larger Si(001) plane area at the bottom of the etched holes resulted in bidirectional GaN domains, which resulted in poor material quality. The bidirectional GaN domains were observed as two sets of six peaks via a high-resolution x-ray diffraction phi scan of the GaN(10-11) reflection. It was also shown that a triangular array of etched holes was more desirable than square arrays of etched holes for the growth high-quality and continuous GaN films.

  4. Growth and characterization of semi-polar (11-22) GaN on patterned (113) Si substrates

    International Nuclear Information System (INIS)

    Bai, J; Yu, X; Gong, Y; Hou, Y N; Zhang, Y; Wang, T

    2015-01-01

    Patterned (113) Si substrates have been fabricated for the growth of (11-22) semi-polar GaN, which completely eliminates one of the great issues in the growth of semi-polar GaN on silicon substrates, ‘Ga melting-back’. Furthermore, unlike any other mask patterning approaches which normally lead to parallel grooves along a particular orientation, our approach is to form periodic square window patterns. As a result, crack-free semi-polar (11-22) GaN with a significant improvement in crystal quality has been achieved, in particular, basal stacking faults (BSFs) have been significantly reduced. The mechanism for the defect suppression has been investigated based on detailed transmission electron microscopy measurements. It has been found that the BSFs can be impeded effectively at an early growth stage due to the priority growth along the 〈0001〉 direction. The additional 〈1-100〉 lateral growth above the masks results in a further reduction in dislocation density. The significant reduction in BSFs has been confirmed by low temperature photoluminescence measurements. (paper)

  5. Growth and yield performance of Pleurotus ostreatus (Jacq. Fr.) Kumm (oyster mushroom) on different substrates

    OpenAIRE

    Girmay, Zenebe; Gorems, Weldesemayat; Birhanu, Getachew; Zewdie, Solomon

    2016-01-01

    Mushroom cultivation is reported as an economically viable bio-technology process for conversion of various lignocellulosic wastes. Given the lack of technology know-how on the cultivation of mushroom, this study was conducted in Wondo Genet College of Forestry and Natural Resource, with the aim to assess the suitability of selected substrates (agricultural and/or forest wastes) for oyster mushroom cultivation. Accordingly, four substrates (cotton seed, paper waste, wheat straw, and sawdust) ...

  6. Stabilisation of spent mushroom substrate for application as a plant growth-promoting organic amendment.

    Science.gov (United States)

    Paula, Fabiana S; Tatti, Enrico; Abram, Florence; Wilson, Jude; O'Flaherty, Vincent

    2017-07-01

    Over three million tonnes of spent mushroom substrate (SMS) are produced in Europe every year as a by-product of the cultivation of Agaricus bisporus. The management of SMS has become an increasing challenge for the mushroom production industry, and finding environmentally and economically sustainable solutions for this organic residue is, therefore, highly desirable. Due to its physical properties and nutrient content, SMS has great potential to be employed in agricultural and horticultural sectors, and further contribute to reduce the use of non-renewable resources, such as peat. However, SMS is often regarded as not being stable and/or mature, which hampers its wide use for crop production. Here, we demonstrate the stabilisation of SMS and its subsequent use as organic fertiliser and partial peat replacement in horticulture. The stabilisation was performed in a laboratory-scale composting system, with controlled temperature and aeration. Physical and chemical parameters were monitored during composting and provided information on the progress of the process. Water soluble carbohydrates (WSC) content was found to be the most reliable parameter to predict SMS stability. In situ oxygen consumption indicated the main composting phases, reflecting major changes in microbial activity. The structure of the bacterial community was also found to be a potential predictor of stability, as the compositional changes followed the composting progress. By contrast, the fungal community did not present clear successional process along the experiment. Maturity and quality of the stabilised SMS were assessed in a horticultural growing trial. When used as the sole fertiliser source, SMS was able to support Lolium multiflorum (Italian ryegrass) growth and significantly improved grass yield with a concentration-dependent response, increasing grass biomass up to 300%, when compared to the untreated control. In summary, the results indicated that the method employed was efficient in

  7. A model framework to describe growth-linked biodegradation of trace-level pesticides in the presence of coincidental carbon substrates and microbes

    DEFF Research Database (Denmark)

    Liu, Li; Helbling, Damian E.; Kohler, Hans-Peter E.

    2014-01-01

    described were: the growth-linked biodegradation of micropollutant at environmentally relevant concentrations; the effect of coincidental assimilable organic carbon substrates; and the effect of coincidental microbes that compete for assimilable organic carbon substrates. We used Monod kinetic models...... to describe substrate utilization and microbial growth rates for specific pesticide and degrader pairs. We then extended the model to include terms for utilization of assimilable organic carbon substrates by the specific degrader and coincidental microbes, growth on assimilable organic carbon substrates......, challenges remain in developing engineered remediation strategies for pesticide-contaminated environments because the fundamental processes that regulate growth-linked biodegradation of pesticides in natural environments remain poorly understood. In this research, we developed a model framework to describe...

  8. Effect of hydrogen flow on growth of 3C-SiC heteroepitaxial layers on Si(111) substrates

    International Nuclear Information System (INIS)

    Yan, Guoguo; Zhang, Feng; Niu, Yingxi; Yang, Fei; Liu, Xingfang; Wang, Lei; Zhao, Wanshun; Sun, Guosheng; Zeng, Yiping

    2015-01-01

    Highlights: • 3C-SiC thin films of preferential orientation along with Si(111) substrates were obtained using home-made horizontal LPCVD with different H_2 flow rate ranging from15 to 30 slm. • High H_2 flow rate will inhibit the out-diffusion of silicon atoms from silicon substrates effectively. Transformation and the mechanism of void formation are discussed based on our model. • The variation of growth rate and n-type doping with increasing H_2 flow rate is researched and the influencing mechanism is discussed. - Abstract: 3C-SiC thin films were grown on Si(111) substrates at 1250 °C by horizontal low pressure chemical vapor deposition (LPCVD). We performed an exhaustive study on the effect of H_2 flow rate on the crystalline quality, surface morphologies, growth rate, n-type doping of 3C-SiC thin films and the voids at the interface. The films show epitaxial nature with high crystal quality and surface morphology increase obviously with increasing H_2 flow rate. The growth rate and n-type doping are also dependent on H_2 flow rate. The properties of the voids at the interface are discussed based on the cross-sectional scanning electron microscope characterization. Transformation of voids with increasing H_2 flow rate are attributed to higher 3C-SiC film growth rate and H_2 etching rate. The mechanism of void formation is discussed based on our model, too. The results demonstrate that H_2 flow rate plays a very important role in the heteroepitaxial growth of 3C-SiC films.

  9. Effect of hydrogen flow on growth of 3C-SiC heteroepitaxial layers on Si(111) substrates

    Energy Technology Data Exchange (ETDEWEB)

    Yan, Guoguo [Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); Zhang, Feng, E-mail: fzhang@semi.ac.cn [Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); Niu, Yingxi; Yang, Fei [Electrical Engineering New Materials and Microelectronics Department, State Grid Smart Grid Research Institute, Beijing 100192 (China); Liu, Xingfang; Wang, Lei; Zhao, Wanshun [Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); Sun, Guosheng [Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); Dongguan Tianyu Semiconductor, Inc., Dongguan 523000 (China); Zeng, Yiping [Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

    2015-10-30

    Highlights: • 3C-SiC thin films of preferential orientation along with Si(111) substrates were obtained using home-made horizontal LPCVD with different H{sub 2} flow rate ranging from15 to 30 slm. • High H{sub 2} flow rate will inhibit the out-diffusion of silicon atoms from silicon substrates effectively. Transformation and the mechanism of void formation are discussed based on our model. • The variation of growth rate and n-type doping with increasing H{sub 2} flow rate is researched and the influencing mechanism is discussed. - Abstract: 3C-SiC thin films were grown on Si(111) substrates at 1250 °C by horizontal low pressure chemical vapor deposition (LPCVD). We performed an exhaustive study on the effect of H{sub 2} flow rate on the crystalline quality, surface morphologies, growth rate, n-type doping of 3C-SiC thin films and the voids at the interface. The films show epitaxial nature with high crystal quality and surface morphology increase obviously with increasing H{sub 2} flow rate. The growth rate and n-type doping are also dependent on H{sub 2} flow rate. The properties of the voids at the interface are discussed based on the cross-sectional scanning electron microscope characterization. Transformation of voids with increasing H{sub 2} flow rate are attributed to higher 3C-SiC film growth rate and H{sub 2} etching rate. The mechanism of void formation is discussed based on our model, too. The results demonstrate that H{sub 2} flow rate plays a very important role in the heteroepitaxial growth of 3C-SiC films.

  10. EFFECT OF DIFFERENT SUBSTRATES ON THE GROWTH AND YIELD OF TOMATO (Lycopersicum esculentum Mill UNDER GREENHOUSE CONDITIONS

    Directory of Open Access Journals (Sweden)

    Luis Daniel Ortega-Martínez

    2010-09-01

    Full Text Available The tomato (Lycopersicum esculentum Mill is the world's second most important vegetable. In Mexico, the crop gains economic and social relevance by the generation of foreign exchange and jobs, the production systems of this vegetable have been diversified in order to increase performance, incorporating innovative technologies such as plastic covers, drop irrigation and hydroponics. One of the main factors determining the success of the crop is the substrate, being the medium in which roots were developed which have great influence on the growth and development. In thisstudy, we evaluated during the crop season 2008-2009, the effect of substrate: pine sawdust, compost of sheep manure, agricultural land and red volcanic rock, on growth and yield of tomato. The experimental design used was randomized complete block with four repetitions and ten treatments were evaluated results from a combination of substrates in a volume of 1:1, each experimental unit consisted of four plants, the studied variables were subjected to an analysis of variance (ANOVA using the statistical package Statistical Package for the Social Sciences (SPSS. The genotype used was Sun 7705. Significant differences between substrates, composting with sawdust mixing affected to a greater response for the variables height 4.61 m, 2.1 cm thick of stem, the fruits of greater weight 107.8 g, yield per plant and 4 kg and 25 kg/m-2. However, the number of flowers and clusters was higher in the sawdust substrate, so the composting with sawdust mixture may be a viable option for greenhouse tomato production.

  11. Microcrystalline silicon growth by low laser energy crystallization on a plastic substrate

    International Nuclear Information System (INIS)

    Kim, D. Y.; Seo, C. K.; Shim, M. S.; Kim, C. H.; Yi, J.

    2004-01-01

    We are reporting the crystallization of amorphous silicon (a-Si) using a XeCl excimer laser treatment. Although polycarbonate (PC) plastic substrates are very weak at high temperatures of more than 150 .deg. C, they are very useful for applications to microelectronics because of light weight, high transmittance, and flexibility. In order to crystallize a-Si films on plastic substrates, we suggest that a CeO 2 seed layer will be very helpful at a low laser energy density. The seed layer is deposited at room temperature by rf using magnetron sputtering. A seed layer deposition method will be also presented in detail in this article. We compare a-Si crytallization without a seed layer with one with a seed layer deposited between the a-Si and the plastic substrate. The a-Si was deposited on the plastic substrate by using inductively coupled plasma Chemical-Vapor Deposition (ICPCVD) at the room temperature. In this paper, we will present the crystallization properties of a-Si with and without a CeO 2 seed layer on the plastic substrate.

  12. Growth of TiO2 Thin Film on Various Substrates using RF Magnetron Sputtering

    International Nuclear Information System (INIS)

    Ali, Riyaz Ahmad Mohamed; Nayan, Nafarizal

    2011-01-01

    The conductivity of Titanium Dioxide (TiO 2 ) thin film fabricated using Radio Frequency (RF) Magnetron Sputtering on Silicon (Si), Indium doped--Tin Oxide (ITO) and microscope glass (M) substrates is presented in this paper. The dependant of thin film thickness and type of substrate been discussed. TiO 2 was deposited using Ti target in Ar+O 2 (45:10) mixture at 250 W for 45, 60, 75, 90, 105 and 120 minute. Resultant thickness varies from 295 nm to 724 nm with deposition rate 6.4 nm/min. On the other hand, resistivity, Rs value for ITO substrate is between 5.72x10 -7 to 1.54x10 -6 Ω.m, Si substrate range is between 3.52x10 -6 to 1.76x10 -5 Ω.m and M substrate range is between 99 to 332 Ω.m. The value of resistivity increases with the thickness of the thin film.

  13. Epitaxial Growth of Permalloy Thin Films on MgO Single-Crystal Substrates

    International Nuclear Information System (INIS)

    Ohtake, Mitsuru; Tanaka, Takahiro; Matsubara, Katsuki; Futamoto, Masaaki; Kirino, Fumiyoshi

    2011-01-01

    Permalloy (Py: Ni - 20 at. % Fe) thin films were prepared on MgO single-crystal substrates of (100), (110), and (111) orientations by molecular beam epitaxy. Py crystals consisting of fcc(100) and hcp(112-bar 0) orientations epitaxially nucleate on MgO(100) substrates. With increasing the substrate temperature, the volume ratio of fcc(100) to hcp(112-bar 0) crystal increases. The metastable hcp(112-bar 0) structure transforms into more stable fcc(110) structure with increasing the film thickness. Py(110) fcc single-crystal films are obtained on MgO(110) substrates, whereas Py films epitaxially grow on MgO(111) substrates with two types of fcc(111) variants whose orientations are rotated around the film normal by 180 deg. each other. X-ray diffraction analysis indicates that the out-of-plane and the in-plane lattice spacings of these fcc-Py films agree within ±0.4% with the values of bulk fcc-Py crystal, suggesting that the strains in the films are very small. High-resolution transmission electron microscopy shows that periodical misfit dislocations are preferentially introduced in the films around the Py/MgO(100) and the Py/MgO(110) interfaces to reduce the lattice mismatches. The magnetic properties are considered to be reflecting the magnetocrystalline anisotropies of bulk fcc-Py and/or metastable hcp-Py crystals and the shape anisotropy caused by the surface undulations.

  14. Epitaxial Growth of Permalloy Thin Films on MgO Single-Crystal Substrates

    Energy Technology Data Exchange (ETDEWEB)

    Ohtake, Mitsuru; Tanaka, Takahiro; Matsubara, Katsuki; Futamoto, Masaaki [Faculty of Science and Engineering, Chuo University, 1-13-27 Kasuga, Bunkyo-ku, Tokyo 112-8551 (Japan); Kirino, Fumiyoshi, E-mail: ohtake@futamoto.elect.chuo-u.ac.jp [Graduate School of Fine Arts, Tokyo National University of Fine Arts and Music, 12-8 Ueno-koen, Taito-ku, Tokyo 110-8714 (Japan)

    2011-07-06

    Permalloy (Py: Ni - 20 at. % Fe) thin films were prepared on MgO single-crystal substrates of (100), (110), and (111) orientations by molecular beam epitaxy. Py crystals consisting of fcc(100) and hcp(112-bar 0) orientations epitaxially nucleate on MgO(100) substrates. With increasing the substrate temperature, the volume ratio of fcc(100) to hcp(112-bar 0) crystal increases. The metastable hcp(112-bar 0) structure transforms into more stable fcc(110) structure with increasing the film thickness. Py(110){sub fcc} single-crystal films are obtained on MgO(110) substrates, whereas Py films epitaxially grow on MgO(111) substrates with two types of fcc(111) variants whose orientations are rotated around the film normal by 180 deg. each other. X-ray diffraction analysis indicates that the out-of-plane and the in-plane lattice spacings of these fcc-Py films agree within {+-}0.4% with the values of bulk fcc-Py crystal, suggesting that the strains in the films are very small. High-resolution transmission electron microscopy shows that periodical misfit dislocations are preferentially introduced in the films around the Py/MgO(100) and the Py/MgO(110) interfaces to reduce the lattice mismatches. The magnetic properties are considered to be reflecting the magnetocrystalline anisotropies of bulk fcc-Py and/or metastable hcp-Py crystals and the shape anisotropy caused by the surface undulations.

  15. Effect of Growth Pressure on Epitaxial Graphene Grown on 4H-SiC Substrates by Using Ethene Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    Shuxian Cai

    2015-08-01

    Full Text Available The Si(0001 face and C(000-1 face dependences on growth pressure of epitaxial graphene (EG grown on 4H-SiC substrates by ethene chemical vapor deposition (CVD was studied using atomic force microscopy (AFM and micro-Raman spectroscopy (μ-Raman. AFM revealed that EGs on Si-faced substrates had clear stepped morphologies due to surface step bunching. However, This EG formation did not occur on C-faced substrates. It was shown by μ-Raman that the properties of EG on both polar faces were different. EGs on Si-faced substrates were relatively thinner and more uniform than on C-faced substrates at low growth pressure. On the other hand, D band related defects always appeared in EGs on Si-faced substrates, but they did not appear in EG on C-faced substrate at an appropriate growth pressure. This was due to the μ-Raman covering the step edges when measurements were performed on Si-faced substrates. The results of this study are useful for optimized growth of EG on polar surfaces of SiC substrates.

  16. Rational growth of semi-polar ZnO texture on a glass substrate for optoelectronic applications

    Science.gov (United States)

    Lu, B.; Ma, M. J.; Ye, Y. H.; Lu, J. G.; He, H. P.; Ye, Z. Z.

    2013-02-01

    Semi-polar ZnO films with surface texture were grown on glass substrates via pulsed-laser deposition (PLD) through Co-Ga co-doping. Oxygen pressure (PO2) was found to have significant effects on the structural and optical properties of the Zn(Co, Ga)O (ZCGO) films. A self-textured film with (1\\,0\\,\\bar {1}\\,1) preferred orientation (PO) was achieved by varying the growth conditions including a crucial narrow PO2 window and growth time. A possible mechanism underlying the PO evolution and the final texture of the films was proposed, which can be attributed to the collaboration of the doping effect and the PO2-dependent evolutionary selection process, in which certain grains can have increased vertical growth rate with respect to the substrate surface through interplane diffusion. Moreover, the growth of undoped pure ZnO films proceeded by using the (1\\,0\\,\\bar {1}\\,1) ZCGO film as a buffer layer. The ZnO layers retained a semi-polar characteristic with improved crystallinity and better optical quality. The epitaxy-like orientation of ZnO layers grown on (1\\,0\\,\\bar {1}\\,1) ZCGO films has applications in the development of semi-polar ZnO-based light-emitting diodes.

  17. Microbial ecology of extreme environments: Antarctic dry valley yeasts and growth in substrate-limited habitats

    Science.gov (United States)

    Vishniac, H. S.

    1982-01-01

    The success of the Antarctic Dry Valley yeasts presumeably results from adaptations to multiple stresses, to low temperatures and substrate-limitation as well as prolonged resting periods enforced by low water availability. Previous investigations have suggested that the crucial stress is substrate limitation. Specific adaptations may be pinpointed by comparing the physiology of the Cryptococcus vishniacii complex, the yeasts of the Tyrol Valley, with their congeners from other habitats. Progress was made in methods of isolation and definition of ecological niches, in the design of experiments in competition for limited substrate, and in establishing the relationships of the Cryptococcus vishniacii complex with other yeasts. In the course of investigating relationships, a new method for 25SrRNA homology was developed. For the first time it appears that 25SrRNA homology may reflect parallel or convergent evolution.

  18. MBE growth and characterization of ZnTe epilayers on m-plane sapphire substrates

    Energy Technology Data Exchange (ETDEWEB)

    Nakasu, Taizo; Sun, Wei-Che; Yamashita, Sotaro; Aiba, Takayuki; Taguri, Kosuke [Department of Electrical Engineering and Bioscience, Waseda University, Tokyo 169-8555 (Japan); Kobayashi, Masakazu [Department of Electrical Engineering and Bioscience, Waseda University, Tokyo 169-8555 (Japan); Kagami Memorial Research Institute for Materials Science and Technology, Waseda University, 2-8-26, Tokyo 169-0051 (Japan); Asahi, Toshiaki [Technology Development Center, JX Nippon Mining and Metals Corporation, Hitachi 317-0056 (Japan); Togo, Hiroyoshi [NTT Microsystem Integration Laboratories, Atsugi 243-0198 (Japan)

    2014-07-15

    ZnTe epilayers were grown on transparent (10-10) oriented (m -plane) sapphire substrates by molecular beam epitaxy (MBE). Pole figure imaging was used to study the domain distribution within the layer. (211)-oriented ZnTe domains were formed on m -plane sapphire. The presence of only one kind of (211) ZnTe domain formed on the 2 -tilted m -plane sapphire substrates was confirmed. Thus, single domain (211) ZnTe epilayers can be grown on the m -plane sapphire using MBE. Although differences in the crystal structure and lattice mismatch are large, precise control of the substrate surface lattice arrangement result in the formation of high-quality epitaxial layers. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  19. Growth of carbon nanotubes by Fe-catalyzed chemical vapor processes on silicon-based substrates

    Science.gov (United States)

    Angelucci, Renato; Rizzoli, Rita; Vinciguerra, Vincenzo; Fortuna Bevilacqua, Maria; Guerri, Sergio; Corticelli, Franco; Passini, Mara

    2007-03-01

    In this paper, a site-selective catalytic chemical vapor deposition synthesis of carbon nanotubes on silicon-based substrates has been developed in order to get horizontally oriented nanotubes for field effect transistors and other electronic devices. Properly micro-fabricated silicon oxide and polysilicon structures have been used as substrates. Iron nanoparticles have been obtained both from a thin Fe film evaporated by e-gun and from iron nitrate solutions accurately dispersed on the substrates. Single-walled nanotubes with diameters as small as 1 nm, bridging polysilicon and silicon dioxide “pillars”, have been grown. The morphology and structure of CNTs have been characterized by SEM, AFM and Raman spectroscopy.

  20. Characterization of TiO2 Thin Films on Glass Substrate Growth Using DC Sputtering Technique

    International Nuclear Information System (INIS)

    Agus Santoso; Tjipto Sujitno; Sayono

    2002-01-01

    It has been fabricated and characterization a TiO 2 thin films deposited on glass substrate using DC sputtering technique. Fabrication of TiO 2 thin films were carried out at electrode voltage 4 kV, sputtering current 5 mA, vacuum pressure 5 x 10 -4 torr, deposition time 150 minutes, and temperature of the substrate were varied from 150 -350 o C, while as a gas sputter was argon. The results was tested their micro structure using SEM, and crystal structure using XRD and found that the crystal structure of TiO 2 powder before deposited on glass substrate was rutile and anatase with orientation (110) and (200) for anatase and (100) and (111) rutile structure. While the crystal structure which deposited at temperature 150 o C and deposition time 2.5 hours was anatase with orientation (001) and (200). (author)

  1. Nickel enhanced graphene growth directly on dielectric substrates by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Wofford, Joseph M., E-mail: joewofford@gmail.com, E-mail: lopes@pdi-berlin.de; Lopes, Joao Marcelo J., E-mail: joewofford@gmail.com, E-mail: lopes@pdi-berlin.de; Riechert, Henning [Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany); Speck, Florian; Seyller, Thomas [Technische Universität Chemnitz, Institut für Physik, Reichenhainer Str. 70, 09126 Chemnitz (Germany)

    2016-07-28

    The efficacy of Ni as a surfactant to improve the crystalline quality of graphene grown directly on dielectric Al{sub 2}O{sub 3}(0001) substrates by molecular beam epitaxy is examined. Simultaneously exposing the substrate to a Ni flux throughout C deposition at 950 °C led to improved charge carrier mobility and a Raman spectrum indicating less structural disorder in the resulting nanocrystalline graphene film. X-ray photoelectron spectroscopy confirmed that no residual Ni could be detected in the film and showed a decrease in the intensity of the defect-related component of the C1s level. Similar improvements were not observed when a lower substrate temperature (850 °C) was used. A close examination of the Raman spectra suggests that Ni reduces the concentration of lattice vacancies in the film, possibly by catalytically assisting adatom incorporation.

  2. Seed-mediated direct growth of CdSe nanoclusters on substrates

    International Nuclear Information System (INIS)

    Pan Shangke; Ebrahim, Shaker; Soliman, Moataz; Qiao Qiquan

    2013-01-01

    Different shapes of CdSe nanostructures were obtained by hydrothermal method with varied Se sources and buffer layers. Hexagonal nanoparticles of CdSe with Wurtzite structure were synthesized from Se powder resource, while CdSe nanoclusters with Wurtzite structure were grown from Na 2 SeO 3 aqueous solution resources at 165 °C using cetyltrimethylammonium bromide as surfactant. Using ZnO nanoparticles as a seed layer, CdSe nanostructures only partially covered the indium tin oxide (ITO) substrates. With ZnO/CdSe quantum dots composite seed layer, CdSe nanostructures fully covered the ITO substrates.

  3. Growth of vertically oriented InN nanorods from In-rich conditions on unintentionally patterned sapphire substrates

    Energy Technology Data Exchange (ETDEWEB)

    Terziyska, Penka T., E-mail: pterziy1@lakeheadu.ca [Semiconductor Research Laboratory, Department of Electrical Engineering, Lakehead University, 955 Oliver Road, Thunder Bay, ON P7B 5E1 (Canada); Butcher, Kenneth Scott A. [Semiconductor Research Laboratory, Department of Electrical Engineering, Lakehead University, 955 Oliver Road, Thunder Bay, ON P7B 5E1 (Canada); MEAglow Ltd., Box 398, 2400 Nipigon Road, Thunder Bay, ON P7C4W1 (Canada); Rafailov, Peter [Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia (Bulgaria); Alexandrov, Dimiter [Semiconductor Research Laboratory, Department of Electrical Engineering, Lakehead University, 955 Oliver Road, Thunder Bay, ON P7B 5E1 (Canada); MEAglow Ltd., Box 398, 2400 Nipigon Road, Thunder Bay, ON P7C4W1 (Canada)

    2015-10-30

    Highlights: • Vertical InN nanorods are grown on selective areas of sapphire substrates. • In metal droplets nucleate on the sharp needle apexes on the selective areas. • The preferred orientation and the growth direction of the nanorods are (0 0 0 1). • The nanorods grow from the supersaturated indium melt on their tops. - Abstract: Vertically oriented InN nanorods were grown on selective areas of unintentionally patterned c-oriented sapphire substrates exhibiting sharp needles that preferentially accommodate In-metal liquid droplets, using Migration Enhanced Afterglow (MEAglow) growth technique. We point out that the formation of AlN needles on selected areas can be reproduced intentionally by over-nitridation of unmasked areas of sapphire substrates. The liquid indium droplets serve as a self-catalyst and the nanorods grow from the supersaturated indium melt in the droplet in a vertical direction. X-ray diffraction measurements indicate the presence of hexagonal InN only, with preferred orientation along (0 0 0 1) crystal axis, and very good crystalline quality. The room temperature Raman spectrum shows the presence of the A{sub 1}(TO), E{sub 2}(high) and A{sub 1}(LO) phonon modes of the hexagonal InN.

  4. Epitaxial growth of fcc-CoxNi100-x thin films on MgO(110) single-crystal substrates

    International Nuclear Information System (INIS)

    Ohtake, Mitsuru; Nukaga, Yuri; Sato, Yoichi; Futamoto, Masaaki; Kirino, Fumiyoshi

    2009-01-01

    Co x Ni 100-x (x=100, 80, 20, 0 at. %) epitaxial thin films were prepared on MgO(110) single-crystal substrates heated at 300 deg. C by ultrahigh vacuum molecular beam epitaxy. The growth mechanism is discussed based on lattice strain and crystallographic defects. CoNi(110) single-crystal films with a fcc structure are obtained for all compositions. Co x Ni 100-x film growth follows the Volmer-Weber mode. X-ray diffraction analysis indicates that the out-of-plane and the in-plane lattice spacings of the Co x Ni 100-x films are in agreement within ±0.5% with the values of the respective bulk Co x Ni 100-x crystals, suggesting that the strain in the film is very small. High-resolution cross-sectional transmission microscopy shows that an atomically sharp boundary is formed between a Co(110) fcc film and a MgO(110) substrate, where periodical misfit dislocations are preferentially introduced in the film at the Co/MgO interface. The presence of such periodical misfit dislocations relieves the strain caused by the lattice mismatch between the film and the substrate.

  5. Comparative study of initial growth stage in PVT growth of AlN on SiC and on native AlN substrates

    Energy Technology Data Exchange (ETDEWEB)

    Epelbaum, B.M.; Heimann, P.; Bickermann, M.; Winnacker, A. [Department of Materials Science 6, University of Erlangen-Nuernberg, Martensstr. 7, 91058 Erlangen (Germany)

    2005-05-01

    The main issue in homoepitaxial growth of aluminum nitride (AlN) on native seed substrates appears to be aluminum oxynitride poisoning of seed surface leading to polycrystalline growth at 1750-1850 C. This is well below the lowest growth temperature appropriate for physical vapor transport (PVT) of bulk AlN, which is about 2150 C. Contrary, heteroepitaxial growth of AlN on SiC is relatively easy to achieve because of natural formation of a thin molten layer on the seed surface and VLS growth of AlN via the molten buffer layer. The most critical issue of AlN growth on SiC is cracking of the grown layer upon cooling as a result of different thermal expansion. Optimization of seeded growth process can be achieved by proper choice of SiC seed orientation and by use of ultra-pure starting material. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  6. Variation in stonefly (Nemoura cinerea Retzius) growth and development in response to hydraulic and substrate conditions

    NARCIS (Netherlands)

    Franken, R.J.M.; Gardeniers, J.J.P.; Beijer, J.A.J.; Peeters, E.T.H.M.

    2008-01-01

    Spatial heterogeneity among microhabitat patches in aquatic ecosystems creates refuges (e.g., substrate interstices) that protect organisms against a variety of environmental constraints. Aquatic insects have evolved the ability to alter their life-history traits in response to environmental

  7. Growth of Horizonatal ZnO Nanowire Arrays on Any Substrate

    KAUST Repository

    Qin, Yong; Yang, Rusen; Wang, Zhong Lin

    2008-01-01

    A general method is presented for growing laterally aligned and patterned ZnO nanowire (NW) arrays on any substrate as long as it is flat. The orientation control is achieved using the combined effect from ZnO seed layer and the catalytically

  8. Growth of InN films on spinel substrates by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Mitamura, K. [Institute of Industrial Science (IIS), The University of Tokyo, 4-6-1 Komaba, Megruro-ku, Tokyo 153-8505 (Japan); Ohta, J.; Fujioka, H. [Institute of Industrial Science (IIS), The University of Tokyo, 4-6-1 Komaba, Megruro-ku, Tokyo 153-8505 (Japan); Kanagawa Academy of Science and Technology (KAST), 3-2-1 Sakado, Takatsu-ku, Kanagawa 213-0012 (Japan); Oshima, M. [Department of Applied Chemistry, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)

    2007-10-15

    We have grown InN films on MgAl{sub 2}O{sub 4}(111) substrates with atomically flat surfaces using pulsed laser deposition (PLD) and compared their structural properties with those grown on (Mn,Zn)Fe{sub 2}O{sub 4}(111) substrates. It has been revealed that InN(0001) films grow on MgAl{sub 2}O{sub 4}(111) with an in-plane epitaxial relationship of InN[1 anti 100]//MgAl{sub 2}O{sub 4}[1 anti 10], achieving a lattice mismatch minimum. The InN films exhibited a clear sixfold rotational symmetry, without 30 rotational domains and with a full width at half maximum value of the InN 0002 rocking curve being 17.5 arcmin. Comparison between InN films grown on MgAl{sub 2}O{sub 4} and those on (Mn,Zn)Fe{sub 2}O{sub 4} led us to conclude that suppression of the interfacial reactions between the InN films and the substrate is inherently important to obtain high quality InN on substrates with a spinel structure. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  9. Nitrogen immobilization in plant growth substrates: clean chip residual, pine bark and peat moss

    Science.gov (United States)

    A study was undertaken to determine the extent of nitrogen (N) immobilization and microbial respiration in a high wood-fiber content substrate (clean chip residual (CCR)). Control treatments of pine bark (PB) and peat moss (PM) were compared to two screen sizes (0.95 cm and 0.48 cm) of CCR for micro...

  10. The effect of sulphur-terminated GaAs substrates on the MOVPE growth of CuGaS{sub 2} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Berndt, P.R. [Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa)]. E-mail: pearl.berndt@nmmu.ac.za; Botha, J.R. [Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Branch, M.S. [Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Leitch, A.W.R. [Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Kirmse, H. [Institute of Physics, Chair of Crystallography, Humboldt University of Berlin, Berlin (Germany); Neumann, W. [Institute of Physics, Chair of Crystallography, Humboldt University of Berlin, Berlin (Germany); Weber, J. [Institute for Applied Physics-Semiconductor Physics, University of Technology, Dresden (Germany)

    2007-05-31

    In this study, various CuGaS{sub 2} layers were grown on GaAs (001) substrates using metalorganic vapour phase epitaxy, for the purpose of studying the effect of sulphur-termination of the substrate on layer quality. The resultant films were investigated using X-ray diffractometry, and transmission electron microscopy, with high-resolution transmission electron microscopy providing additional insights into crystallite growth on the control substrates. This paper will demonstrate that sulphur-termination limits substrate degradation. In the absence of sulphur-termination, atypical three-dimensional MOVPE growth is observed, with epitaxial crystallites varying in size from 10 nm to 200 nm. Substrate degradation inhibits lateral growth at the interface resulting in amorphous regions, cavities, and epitaxial crystallites demonstrating overgrowth into mushroom-like structures.

  11. The effect of sulphur-terminated GaAs substrates on the MOVPE growth of CuGaS2 thin films

    International Nuclear Information System (INIS)

    Berndt, P.R.; Botha, J.R.; Branch, M.S.; Leitch, A.W.R.; Kirmse, H.; Neumann, W.; Weber, J.

    2007-01-01

    In this study, various CuGaS 2 layers were grown on GaAs (001) substrates using metalorganic vapour phase epitaxy, for the purpose of studying the effect of sulphur-termination of the substrate on layer quality. The resultant films were investigated using X-ray diffractometry, and transmission electron microscopy, with high-resolution transmission electron microscopy providing additional insights into crystallite growth on the control substrates. This paper will demonstrate that sulphur-termination limits substrate degradation. In the absence of sulphur-termination, atypical three-dimensional MOVPE growth is observed, with epitaxial crystallites varying in size from 10 nm to 200 nm. Substrate degradation inhibits lateral growth at the interface resulting in amorphous regions, cavities, and epitaxial crystallites demonstrating overgrowth into mushroom-like structures

  12. Effects of Growth Hormone and Insulin-Like Growth Factor-1 on Postoperative Muscle and Substrate Metabolism

    Directory of Open Access Journals (Sweden)

    Folke Hammarqvist

    2010-01-01

    To conclude, growth factors influences urea metabolism, protein degradation and protein synthesis. There was no clearcut additional effect when combining GH and IGF-1 but the study was probably underpowered to outrule this and effects on nitrogen balance.

  13. Attempts to lower the detection limits of heavy metals in standardized grass cultures by using alternative growth substrates

    International Nuclear Information System (INIS)

    Winter, A.; Mueller, P.; Wagner, G.

    1992-01-01

    In addition to the use of standardized grass cultures (cf. VDI 3792) within the framework of an effect cadastre, grass cultures were tested on two non-contaminated substrates with nutrient solution in the greenhouse and in the open land during different exposure cycles. The results: As compared to the standard cultures on standardized soil, the cultures have the same or a better growth performance and better dry resistance on the artificial substrates; the blind values and the refore the detection limits in particular for cadmium are by far lower; four-week exposure periods with a two-week overlap have an improved information yield for the same amount of work throughout the investigation period as compared to a two-week exposure. Recommendations are derived from the results for a simplified application of the grass culture method in practice. (orig.) [de

  14. Growth of misfit dislocation-free p/p+ thick epitaxial silicon wafers on Ge-B-codoped substrates

    International Nuclear Information System (INIS)

    Jiang Huihua; Yang Deren; Ma Xiangyang; Tian Daxi; Li Liben; Que Duanlin

    2006-01-01

    The growth of p/p + silicon epitaxial silicon wafers (epi-wafers) without misfit dislocations has been successfully achieved by using heavily boron-doped Czochralski (CZ) silicon wafers codoped with desirable level of germanium as the substrates. The lattice compensation by codoping of germanium and boron into the silicon matrix to reduce the lattice mismatch between the substrate (heavily boron-doped) and epi-layer (lightly boron-doped) is the basic idea underlying in the present achievement. In principle, the codoping of germanium and boron in the CZ silicon can be tailored to achieve misfit dislocation-free epi-layer with required thickness. It is reasonably expected that the presented solution to elimination of misfit dislocations in the p/p + silicon wafers can be applied in the volume production

  15. Catalytic growth of carbon nanofibers on Cr nanoparticles on a carbon substrate: adsorbents for organic dyes in water

    International Nuclear Information System (INIS)

    Alves de Oliveira, Luiz Carlos; Cândido da Silva, Adilson; Rodrigues Teixeira Machado, Alan; Diniz, Renata; César Pereira, Márcio

    2013-01-01

    We have produced carbon nanofibers (CNFs) using leather waste that had been tanned with a chromium bath, and when dried contained Cr 2 O 3 . Suitable reduction processing produced a carbon substrate with supported nanoparticles of chromium metal. Powder X-ray diffraction showed that the Cr 2 O 3 is reduced on the carbon surface to produce CrC and metal Cr, which is the effective catalyst for the CNFs growth. The CNF arrays were confirmed by TEM images. Raman data revealed that the synthesized CNFs have a poor-quality graphite structure which favors their use in adsorption processes. These CNFs presented higher affinity to adsorb anionic dyes, whereas the cationic dyes are better adsorbed on the carbon substrate. The low-cost and availability of the carbon precursor makes their potential use to produce CNFs of interest.

  16. Catalytic growth of carbon nanofibers on Cr nanoparticles on a carbon substrate: adsorbents for organic dyes in water

    Energy Technology Data Exchange (ETDEWEB)

    Alves de Oliveira, Luiz Carlos, E-mail: luizoliveira@qui.ufmg.br; Candido da Silva, Adilson; Rodrigues Teixeira Machado, Alan [ICEx, Universidade Federal de Minas Gerais, Departamento de Quimica (Brazil); Diniz, Renata [Universidade Federal de Juiz de Fora, Departamento de Quimica (Brazil); Cesar Pereira, Marcio [Universidade Federal dos Vales do Jequitinhonha e Mucuri, Instituto de Ciencia, Engenharia e Tecnologia (Brazil)

    2013-05-15

    We have produced carbon nanofibers (CNFs) using leather waste that had been tanned with a chromium bath, and when dried contained Cr{sub 2}O{sub 3}. Suitable reduction processing produced a carbon substrate with supported nanoparticles of chromium metal. Powder X-ray diffraction showed that the Cr{sub 2}O{sub 3} is reduced on the carbon surface to produce CrC and metal Cr, which is the effective catalyst for the CNFs growth. The CNF arrays were confirmed by TEM images. Raman data revealed that the synthesized CNFs have a poor-quality graphite structure which favors their use in adsorption processes. These CNFs presented higher affinity to adsorb anionic dyes, whereas the cationic dyes are better adsorbed on the carbon substrate. The low-cost and availability of the carbon precursor makes their potential use to produce CNFs of interest.

  17. Growth of GaAs-nanowires on GaAs (111)B substrates induced by focused ion beam

    Energy Technology Data Exchange (ETDEWEB)

    Schott, Ruediger; Reuter, Dirk; Wieck, Andreas D. [Lehrstuhl fuer Angewandte Festkoerperphysik, Ruhr-Universitaet Bochum (Germany)

    2011-07-01

    Semiconductor nanowires are a promising system for applications in the areas of electronics and photonics and also for exploring phenomena at the nanoscale. There are several approaches to grow nanowires at arbitrary sites on the wafer. We report about growing GaAs-nanowires on GaAs(111)B substrates via the vapour-liquid-solid (VLS) mechanism in an ultra-high-vacuum (UHV)-cluster of a molecular beam epitaxy (MBE) and a focused ion beam (FIB) system. Our idea is to implant metal seeds (especially Au) for the nanowire growth by in situ patterning using FIB. Due to the UHV transfer between the FIB and the MBE chamber, no further cleaning step of the substrate surface is necessary. Formations of organized GaAs-nanowires and high aspect ratios are observed.

  18. Catalytic growth of carbon nanofibers on Cr nanoparticles on a carbon substrate: adsorbents for organic dyes in water

    Science.gov (United States)

    de Oliveira, Luiz Carlos Alves; da Silva, Adilson Cândido; Machado, Alan Rodrigues Teixeira; Diniz, Renata; Pereira, Márcio César

    2013-05-01

    We have produced carbon nanofibers (CNFs) using leather waste that had been tanned with a chromium bath, and when dried contained Cr2O3. Suitable reduction processing produced a carbon substrate with supported nanoparticles of chromium metal. Powder X-ray diffraction showed that the Cr2O3 is reduced on the carbon surface to produce CrC and metal Cr, which is the effective catalyst for the CNFs growth. The CNF arrays were confirmed by TEM images. Raman data revealed that the synthesized CNFs have a poor-quality graphite structure which favors their use in adsorption processes. These CNFs presented higher affinity to adsorb anionic dyes, whereas the cationic dyes are better adsorbed on the carbon substrate. The low-cost and availability of the carbon precursor makes their potential use to produce CNFs of interest.

  19. Factors influencing epitaxial growth of three-dimensional Ge quantum dot crystals on pit-patterned Si substrate

    International Nuclear Information System (INIS)

    Ma, Y J; Zhong, Z; Yang, X J; Fan, Y L; Jiang, Z M

    2013-01-01

    We investigated the molecular beam epitaxy growth of three-dimensional (3D) Ge quantum dot crystals (QDCs) on periodically pit-patterned Si substrates. A series of factors influencing the growth of QDCs were investigated in detail and the optimized growth conditions were found. The growth of the Si buffer layer and the first quantum dot (QD) layer play a key role in the growth of QDCs. The pit facet inclination angle decreased with increasing buffer layer thickness, and its optimized value was found to be around 21°, ensuring that all the QDs in the first layer nucleate within the pits. A large Ge deposition amount in the first QD layer favors strain build-up by QDs, size uniformity of QDs and hence periodicity of the strain distribution; a thin Si spacer layer favors strain correlation along the growth direction; both effects contribute to the vertical ordering of the QDCs. Results obtained by atomic force microscopy and cross-sectional transmission electron microscopy showed that 3D ordering was achieved in the Ge QDCs with the highest ever areal dot density of 1.2 × 10 10 cm −2 , and that the lateral and the vertical interdot spacing were ∼10 and ∼2.5 nm, respectively. (paper)

  20. Factors influencing epitaxial growth of three-dimensional Ge quantum dot crystals on pit-patterned Si substrate.

    Science.gov (United States)

    Ma, Y J; Zhong, Z; Yang, X J; Fan, Y L; Jiang, Z M

    2013-01-11

    We investigated the molecular beam epitaxy growth of three-dimensional (3D) Ge quantum dot crystals (QDCs) on periodically pit-patterned Si substrates. A series of factors influencing the growth of QDCs were investigated in detail and the optimized growth conditions were found. The growth of the Si buffer layer and the first quantum dot (QD) layer play a key role in the growth of QDCs. The pit facet inclination angle decreased with increasing buffer layer thickness, and its optimized value was found to be around 21°, ensuring that all the QDs in the first layer nucleate within the pits. A large Ge deposition amount in the first QD layer favors strain build-up by QDs, size uniformity of QDs and hence periodicity of the strain distribution; a thin Si spacer layer favors strain correlation along the growth direction; both effects contribute to the vertical ordering of the QDCs. Results obtained by atomic force microscopy and cross-sectional transmission electron microscopy showed that 3D ordering was achieved in the Ge QDCs with the highest ever areal dot density of 1.2 × 10(10) cm(-2), and that the lateral and the vertical interdot spacing were ~10 and ~2.5 nm, respectively.

  1. Effects of Growth Hormone and Insulin-Like Growth Factor-1 on Postoperative Muscle and Substrate Metabolism

    OpenAIRE

    Hammarqvist, Folke; Wennström, Ingmar; Wernerman, Jan

    2010-01-01

    This study explored if a combined supplementation of GH and IGF-1 had an additive effect on whole body nitrogen economy, energy, substrate and skeletal muscle metabolism following surgical trauma. Patients were randomized to controls (C; n = 10), to GH (0.15?IU/kg/injection) (GH; n = 7) or GH combined with IGF-1 (40??g/kg/injection) subcutaneously twice a day (GH-IGF-1; n = 9) together with standardized parenteral nutrition. Muscle amino acids, glutathione and the ribosomal pattern reflecting...

  2. Wafer bowing control of free-standing heteroepitaxial diamond (100) films grown on Ir(100) substrates via patterned nucleation growth

    International Nuclear Information System (INIS)

    Yoshikawa, Taro; Kodama, Hideyuki; Kono, Shozo; Suzuki, Kazuhiro; Sawabe, Atsuhito

    2015-01-01

    The potential of patterned nucleation growth (PNG) technique to control the wafer bowing of free-standing heteroepitaxial diamond films was investigated. The heteroepitaxial diamond (100) films were grown on an Ir(100) substrate via PNG technique with different patterns of nucleation regions (NRs), which were dot-arrays with 8 or 13 μm pitch aligned to < 100 > or < 110 > direction of the Ir(100) substrate. The wafer bows and the local stress distributions of the free-standing films were measured using a confocal micro-Raman spectrometer. For each NR pattern, the stress evolutions within the early stage of diamond growth were also studied together with a scanning electron microscopic observation of the coalescing diamond particles. These investigations revealed that the NR pattern, in terms of pitch and direction of dot-array, strongly affects the compressive stress on the nucleation side of the diamond film and dominantly contributes to the elastic deformation of the free-standing film. This indicates that the PNG technique with an appropriate NR pattern is a promising solution to fabricate free-standing heteroepitaxial diamond films with extremely small bows. - Highlights: • Wafer bowing control of free-standing heteroepitaxial diamond (100) films • Effect of patterned nucleation and growth (PNG) technique on wafer bowing reduction • Influence of nucleation region patterns of PNG on wafer bowing • Internal stress analysis of PNG films via confocal micro-Raman spectroscopy

  3. Growth kinetics, effect of carbon substrate in biosynthesis of mcl-PHA by Pseudomonas putida Bet001.

    Science.gov (United States)

    Gumel, A M; Annuar, M S M; Heidelberg, T

    2014-01-01

    Growth associated biosynthesis of medium chain length poly-3-hydroxyalkanoates (mcl-PHA) in Pseudomonas putida Bet001 isolated from palm oil mill effluent was studied. Models with substrate inhibition terms described well the kinetics of its growth. Selected fatty acids (C8:0 to C18:1) and ammonium were used as carbon and nitrogen sources during growth and PHA biosynthesis, resulting in PHA accumulation of about 50 to 69% (w/w) and PHA yields ranging from 10.12 g L(-1) to 15.45 g L(-1), respectively. The monomer composition of the PHA ranges from C4 to C14, and was strongly influenced by the type of carbon substrate fed. Interestingly, an odd carbon chain length (C7) monomer was also detected when C18:1 was fed. Polymer showed melting temperature (T m) of 42.0 (± 0.2) °C, glass transition temperature (T g) of -1.0 (± 0.2) °C and endothermic melting enthalpy of fusion (ΔHf) of 110.3 (± 0.1) J g(-1). The molecular weight (M w) range of the polymer was relatively narrow between 55 to 77 kDa.

  4. Growth kinetics, effect of carbon substrate in biosynthesis of mcl-PHA by Pseudomonas putida Bet001

    Directory of Open Access Journals (Sweden)

    A.M. Gumel

    2014-06-01

    Full Text Available Growth associated biosynthesis of medium chain length poly-3-hydroxyalkanoates (mcl-PHA in Pseudomonas putida Bet001 isolated from palm oil mill effluent was studied. Models with substrate inhibition terms described well the kinetics of its growth. Selected fatty acids (C8:0 to C18:1 and ammonium were used as carbon and nitrogen sources during growth and PHA biosynthesis, resulting in PHA accumulation of about 50 to 69% (w/w and PHA yields ranging from 10.12 g L-1 to 15.45 g L-1, respectively. The monomer composition of the PHA ranges from C4 to C14, and was strongly influenced by the type of carbon substrate fed. Interestingly, an odd carbon chain length (C7 monomer was also detected when C18:1 was fed. Polymer showed melting temperature (Tm of 42.0 (± 0.2 °C, glass transition temperature (Tg of -1.0 (± 0.2 °C and endothermic melting enthalpy of fusion (ΔHf of 110.3 (± 0.1 J g-1. The molecular weight (Mw range of the polymer was relatively narrow between 55 to 77 kDa.

  5. The investigation of alloy formation during InAs nanowires growth on GaAs (111)B substrate

    Energy Technology Data Exchange (ETDEWEB)

    Saqib, Muhammad; Biermanns, Andreas; Davydok, Anton; Pietsch, Ullrich [Festkoerperphysik, Universitaet Siegen, Walter-Flex-Str. 3, Siegen 57072 (Germany); Rieger, Torsten; Grap, Thomas; Lepsa, Mihail [Peter Gruenberg Institute (PGI-9), Forschungzentrum Juelich, Juelich 52425 (Germany)

    2013-07-01

    A possible way to obtain nanowires is the growth in molecular beam epitaxy (MBE) on the (111) oriented surface of the desired substrate, covered by a thin oxide layer. A crucial parameter in this method is the initial thickness of the oxide layer, often determined by an etching procedure. In this contribution, we report on the structural investigation of two different series (etched and unetched) of NWs samples. Vertically aligned InAs nanowires (NWs) doped with Si were self-assisted grown by molecular beam epitaxy on GaAs [111]B substrates covered with a thin SiO{sub x} layer. Using a combination of symmetric and asymmetric X-ray diffraction we study the influence of Si supply on the growth process and nanostructure formation. We find that the number of parasitic crystallites grown between the NWs increases with increasing Si flux. In addition, we observe the formation of a Ga{sub 0.2}In{sub 0.8}As alloy if the growth is performed on samples covered by a defective (etched) oxide layer. This alloy formation is observed within the crystallites and not within the nanowires. The Gallium concentration is determined from the lattice mismatch of the crystallites relative to the InAs nanowires. No alloy formation is found for samples with faultless oxide layers.

  6. Growth of M-plane (10-10)InN on LiAlO2(100) substrate

    International Nuclear Information System (INIS)

    Takagi, Yusuke; Muto, Daisuke; Araki, Tsutomu; Nanishi, Yasushi; Yamaguchi, Tomohiro

    2009-01-01

    In this study, we report the growth and characterization of M-plane InN films on LiAlO 2 (100) substrates by radio-frequency plasma assisted molecular beam epitaxy (RF-MBE). InN films were grown at various temperatures and under various V/III ratios on the substrates. Pure M -plane InN films were successfully grown at a high temperature of 450 C and under a slightly In-rich condition, while the incorporation of C-plane phase was observed in M -plane InN films grown at low temperatures of less than 400 C or under a N-rich condition. These indicate that controls of growth temperature and V/III ratio are important for the growth of pure M-plane InN films. The in-plane epitaxial relationships of M -plane InN on LiAlO 2 (100) were[0001] InN //[010] LiAlO 2 and[1-210] InN //[001] LiAlO 2 . A surface electron accumulation layer on the obtained M-plane InN film is also discussed. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  7. Effects of bamboo substrate and supplemental feeding on growth and production of hybrid red tilapia fingerlings (Oreochromis mossambicusxOrechromis niloticus)

    NARCIS (Netherlands)

    Keshavanath, P.; Gangadhar, B.; Ramesh, T.J.; Dam, van A.A.; Beveridge, M.C.M.; Verdegem, M.C.J.

    2004-01-01

    Periphyton growing on artificial substrates can increase the production of herbivorous fish in aquaculture ponds. Periphyton may be an alternative or a complement for supplemental feed in fingerling production. Growth and production of hybrid red tilapia (Oreochromis mossambicus x Oreochromis

  8. Large-area selective CVD epitaxial growth of Ge on Si substrates

    NARCIS (Netherlands)

    Sammak, A.; De Boer, W.; Nanver, L.K.

    2011-01-01

    Selective epitaxial growth of crystalline Ge on Si in a standard ASM Epsilon 2000 CVD reactor is investigated for the fabrication of Ge p+n diodes. At the deposition temperature of 700?C, most of the lattice mismatch-defects are trapped within first 300nm of Ge growth and good quality single crystal

  9. Substrates of Mauritia flexuosa and wastewater from pig farming on growth and quality in seedlings of Acacia mangium

    Directory of Open Access Journals (Sweden)

    Emanuel França Araújo

    Full Text Available ABSTRACT Sustainable alternatives should be adopted to minimise the negative environmental impacts of agricultural activities. The use of wastewater as well as organic waste, from agricultural activities or found naturally, such as the decomposed stems of the Buriti palm (Mauritia flexuosa, can be a sustainable alternative in the production of seedlings for the reforestation of areas in the process of degradation or desertification, common in the State of Piauí, Brazil. The aim of this study was to evaluate growth and quality in seedlings of Acacia mangium Willd grown in substrates with different proportions of decomposed stems of Mauritia flexuosa (DSB, and irrigated with wastewater from pig farming (WPF. The experimental design was completely randomised, arranged in a 5 x 2 factorial scheme, corresponding to five proportions of DSB and soil (v/v,% - 0:100, 20:80, 40:60, 60:40, 80:20, and two sources of irrigation water (well water and WPF, with four replications. At 100 days after sowing (DAS, the seedlings were collected to measure the variables related to growth, quality and nodulation. Height, root collar diameter, shoot dry weight, leaf area and nitrogen accumulation in the shoots were significantly influenced (p≤0.05 by the interaction between substrate and source of irrigation water. The WPF had no significant influence on the growth or quality of the Acacia mangium Willd seedlings. The best ratio between DSB substrate and soil was 46:54, considered the most suitable for seedling production in Acacia mangium Willd.

  10. Growth of Ca2MnO4 Ruddlesden-Popper structured thin films using combinatorial substrate epitaxy

    International Nuclear Information System (INIS)

    Lacotte, M.; David, A.; Pravarthana, D.; Prellier, W.; Grygiel, C.; Rohrer, G. S.; Salvador, P. A.; Velazquez, M.; Kloe, R. de

    2014-01-01

    The local epitaxial growth of pulsed laser deposited Ca 2 MnO 4 films on polycrystalline spark plasma sintered Sr 2 TiO 4 substrates was investigated to determine phase formation and preferred epitaxial orientation relationships (ORs) for isostructural Ruddlesden-Popper (RP) heteroepitaxy, further developing the high-throughput synthetic approach called Combinatorial Substrate Epitaxy (CSE). Both grazing incidence X-ray diffraction and electron backscatter diffraction patterns of the film and substrate were indexable as single-phase RP-structured compounds. The optimal growth temperature (between 650 °C and 800 °C) was found to be 750 °C using the maximum value of the average image quality of the backscattered diffraction patterns. Films grew in a grain-over-grain pattern such that each Ca 2 MnO 4 grain had a single OR with the Sr 2 TiO 4 grain on which it grew. Three primary ORs described 47 out of 49 grain pairs that covered nearly all of RP orientation space. The first OR, found for 20 of the 49, was the expected RP unit-cell over RP unit-cell OR, expressed as [100][001] film ||[100][001] sub . The other two ORs were essentially rotated from the first by 90°, with one (observed for 17 of 49 pairs) being rotated about the [100] and the other (observed for 10 of 49 pairs) being rotated about the [110] (and not exactly by 90°). These results indicate that only a small number of ORs are needed to describe isostructural RP heteroepitaxy and further demonstrate the potential of CSE in the design and growth of a wide range of complex functional oxides

  11. Growth and characterization of indium tin oxide thin films deposited on PET substrates

    International Nuclear Information System (INIS)

    Lee, Jaehyeong; Jung, Hakkee; Lee, Jongin; Lim, Donggun; Yang, Keajoon; Yi, Junsin; Song, Woo-Chang

    2008-01-01

    Transparent and conductive indium tin oxide (ITO) thin films were deposited onto polyethylene terephthalate (PET) by d.c. magnetron sputtering as the front and back electrical contact for applications in flexible displays and optoelectronic devices. In addition, ITO powder was used for sputter target in order to reduce the cost and time of the film formation processes. As the sputtering power and pressure increased, the electrical conductivity of ITO films decreased. The films were increasingly dark gray colored as the sputtering power increased, resulting in the loss of transmittance of the films. When the pressure during deposition was higher, however, the optical transmittance improved at visible region of light. ITO films deposited onto PET have shown similar optical transmittance and electrical resistivity, in comparison with films onto glass substrate. High quality films with resistivity as low as 2.5 x 10 -3 Ω cm and transmittance over 80% have been obtained on to PET substrate by suitably controlling the deposition parameters

  12. Direct growth and patterning of multilayer graphene onto a targeted substrate without an external carbon source.

    Science.gov (United States)

    Kang, Dongseok; Kim, Won-Jun; Lim, Jung Ah; Song, Yong-Won

    2012-07-25

    Using only a simple tube furnace, we demonstrate the synthesis of patterned graphene directly on a designed substrate without the need for an external carbon source. Carbon atoms are absorbed onto Ni evaporator sources as impurities, and incorporated into catalyst layers during the deposition. Heat treatment conditions were optimized so that the atoms diffused out along the grain boundaries to form nanocrystals at the catalyst-substrate interfaces. Graphene patterns were obtained under patterned catalysts, which restricted graphene formation to within patterned areas. The resultant multilayer graphene was characterized by Raman spectroscopy and transmission electron microscopy to verify the high crystallinity and two-dimensional nanomorphology. Finally, a metal-semiconductor diode with a catalyst-graphene contact structure were fabricated and characterized to assess the semiconducting properties of the graphene sheets with respect to the display of asymmetric current-voltage behavior.

  13. Direct evidence of strain transfer for InAs island growth on compliant Si substrates

    Energy Technology Data Exchange (ETDEWEB)

    Marçal, L. A. B.; Magalhães-Paniago, R.; Malachias, Angelo, E-mail: angeloms@fisica.ufmg.br [Universidade Federal de Minas Gerais, Av. Antonio Carlos 6627, CEP 31270-901, Belo Horizonte (Brazil); Richard, M.-I. [European Synchrotron (ESRF), ID01 beamline, CS 40220, 38043 Grenoble Cedex 9 (France); Aix-Marseille University, IM2NP-CNRS, Faculté des Sciences de St Jérôme, 13397 Marseille (France); Cavallo, F. [Center for High Technology Materials, University of New Mexico, 1313 Goddard St., Albuquerque, New Mexico 87106 (United States); University of Wisconsin-Madison, 1500 Engineering Drive, Madison, Wisconsin 53706 (United States); Lagally, M. G. [University of Wisconsin-Madison, 1500 Engineering Drive, Madison, Wisconsin 53706 (United States); Schmidt, O. G. [Institute for Integrative Nanosciences, IFW-Dresden, D-01171 Dresden (Germany); Schülli, T. Ü. [European Synchrotron (ESRF), ID01 beamline, CS 40220, 38043 Grenoble Cedex 9 (France); Deneke, Ch. [Laboratório Nacional de Nanotecnologia (LNNano/CNPEM), C.P. 6192, CEP 13083-970, Campinas (Brazil)

    2015-04-13

    Semiconductor heteroepitaxy on top of thin compliant layers has been explored as a path to make inorganic electronics mechanically flexible as well as to integrate materials that cannot be grown directly on rigid substrates. Here, we show direct evidences of strain transfer for InAs islands on freestanding Si thin films (7 nm). Synchrotron X-ray diffraction measurements using a beam size of 300 × 700 nm{sup 2} can directly probe the strain status of the compliant substrate underneath deposited islands. Using a recently developed diffraction mapping technique, three-dimensional reciprocal space maps were reconstructed around the Si (004) peak for specific illuminated positions of the sample. The strain retrieved was analyzed using continuous elasticity theory via Finite-element simulations. The comparison of experiment and simulations yields the amount of strain from the InAs islands, which is transferred to the compliant Si thin film.

  14. Selective growth of vertically aligned Fe-filled carbon nanotubes on oxidized silicon substrates

    Energy Technology Data Exchange (ETDEWEB)

    Moench, I; Kozhuharova-Koseva, R; Ruemmeli, M; Elefant, D; Gemming, T; Kaltofen, R; Leonhardt, A; Schaefer, T; Buechner, B [Leibniz Institute of Solid State and Materials Research Dresden (IFW Dresden), Helmholtzstr. 20, D-01069 Dresden (Germany)

    2007-04-15

    Vertically aligned Fe-filled multi-wall carbon nanotubes (MWNTs) have been grown selectively on the SiO{sub 2} surfaces of patterned amorphous carbon (a-C)/SiO{sub 2}/Si substrates. Their morphology, structure and magnetic properties have been studied. The a-C patterns were prepared using conventional lithography processes combined with a sputter-deposition of a-C (thickness of 100 nm). The aligned Fe-filled MWNTs were produced by pyrolysis of ferrocene in a CVD reactor with a two zone furnace system and have high filling yield. The encapsulated Fe nanowires grown on the SiO{sub 2} structures of the patterned a-C/SiO{sub 2}/Si substrates have diameters of 10-20 nm and can reach a few micrometers in length. The described method enables the preparation of complex architectures of Fe-filled MWNTs and may be used for future applications based on filled nanotubes.

  15. Influence of synthesis parameters on CCVD growth of vertically aligned carbon nanotubes over aluminum substrate.

    Science.gov (United States)

    Szabó, Anna; Kecsenovity, Egon; Pápa, Zsuzsanna; Gyulavári, Tamás; Németh, Krisztián; Horvath, Endre; Hernadi, Klara

    2017-08-25

    In the past two decades, important results have been achieved in the field of carbon nanotube (CNT) research, which revealed that carbon nanotubes have extremely good electrical and mechanical properties The range of applications widens more, if CNTs form a forest-like, vertically aligned structure (VACNT) Although, VACNT-conductive substrate structure could be very advantageous for various applications, to produce proper system without barrier films i.e. with good electrical contact is still a challenge. The aim of the current work is to develop a cheap and easy method for growing carbon nanotubes forests on conductive substrate with the CCVD (Catalytic Chemical Vapor Deposition) technique at 640 °C. The applied catalyst contained Fe and Co and was deposited via dip coating onto an aluminum substrate. In order to control the height of CNT forest several parameters were varied during the both catalyst layer fabrication (e.g. ink concentration, ink composition, dipping speed) and the CCVD synthesis (e.g. gas feeds, reaction time). As-prepared CNT forests were investigated with various methods such as scanning electron microscopy, Raman spectroscopy, and cyclic voltammetry. With such an easy process it was possible to tune both the height and the quality of carbon nanotube forests.

  16. Nitrogen Immobilization in Plant Growth Substrates: Clean Chip Residual, Pine Bark, and Peatmoss

    Directory of Open Access Journals (Sweden)

    Cheryl R. Boyer

    2012-01-01

    Full Text Available Rising costs of potting substrates have caused horticultural growers to search for alternative, lower-cost materials. Objectives of this study were to determine the extent of nitrogen immobilization and microbial respiration in a high wood-fiber content substrate, clean chip residual. Microbial activity and nitrogen availability of two screen sizes (0.95 cm and 0.48 cm of clean chip residual were compared to control treatments of pine bark and peatmoss in a 60-day incubation experiment. Four rates (0, 1, 2, or 3 mg of supplemental nitrogen were assessed. Peatmoss displayed little microbial respiration over the course of the study, regardless of nitrogen rate; followed by pine bark, 0.95 cm clean chip residual, and 0.48 cm clean chip residual. Respiration increased with increasing nitrogen. Total inorganic nitrogen (plant available nitrogen was greatest with peatmoss; inorganic nitrogen in other treatments were similar at the 0, 1, and 2 mg supplemental nitrogen rates, while an increase occurred with the highest rate (3 mg. Clean chip residual and pine bark were similar in available nitrogen compared to peatmoss. This study suggests that nitrogen immobilization in substrates composed of clean chip residual is similar to pine bark and can be treated with similar fertilizer amendments during nursery production.

  17. Growth hormone, interferon-gamma, and leukemia inhibitory factor utilize insulin receptor substrate-2 in intracellular signaling

    DEFF Research Database (Denmark)

    Argetsinger, L S; Norstedt, G; Billestrup, Nils

    1996-01-01

    In this report, we demonstrate that insulin receptor substrate-2 (IRS-2) is tyrosyl-phosphorylated following stimulation of 3T3-F442A fibroblasts with growth hormone (GH), leukemia inhibitory factor and interferon-gamma. In response to GH and leukemia inhibitory factor, IRS-2 is immediately...... for GH is further demonstrated by the finding that GH stimulates association of IRS-2 with the 85-kDa regulatory subunit of phosphatidylinositol 3'-kinase and with the protein-tyrosine phosphatase SHP2. These results are consistent with the possibility that IRS-2 is a downstream signaling partner...

  18. Growth and phycocyanin synthesis in the heterotrophic microalga Galdieria sulphuraria on substrates made of food waste from restaurants and bakeries

    DEFF Research Database (Denmark)

    Sloth, Jenni K; Jensen, Henriette Casper; Pleissner, Daniel

    2017-01-01

    Galdieria sulphuraria 074G (Rhodophyta) was grown heterotrophically in defined medium and on amylolytic and proteolytic hydrolysed food waste from restaurants and bakeries. Substrate uptake, growth, and phycocyanin content were quantified in the cultures. The alga utilised carbohydrates and amino...... in quantities resulting in glucose concentrations of 10 and 50 g L−1 for bakery and restaurant waste, respectively. Still, G. sulphuraria 074G grew and produced phycocyanin efficiently on food waste under adequate conditions and may potentially be utilised for synthesise of high-valuable products from food...

  19. Epitaxial growth of cubic Gd{sub 2}O{sub 3} thin films on Ge substrates

    Energy Technology Data Exchange (ETDEWEB)

    Molle, A; Wiemer, C; Bhuiyan, M D N K; Tallarida, G; Fanciulli, M [CNR-INFM, Laboratorio Nazionale MDM, via C. Olivetti 2, I-20041 Agrate Brianza (Italy)], E-mail: alessandro.molle@mdm.infm.it

    2008-03-15

    Gd{sub 2}O{sub 3} thin films were grown on Ge (001) substrates by molecular beam epitaxy. The epitaxial character of the film is demonstrated by electron diffraction during the growth. The structural characterization of the films shows that the Gd{sub 2}O{sub 3} forms a bixbyite polymorph with a (110) out-of-plane orientation. The formation of bixbyite structured Gd{sub 2}O{sub 3} is discussed in terms of the atomic arrangement of the oxide planes on the Ge(001) surface.

  20. Enhanced growth of highly lattice-mismatched CdSe on GaAs substrates by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Wang, Jyh-Shyang; Tsai, Yu-Hsuan; Wang, Hsiao-Hua; Ke, Han-Xiang; Tong, Shih-Chang; Yang, Chu-Shou; Wu, Chih-Hung; Shen, Ji-Lin

    2013-01-01

    This work demonstrates the improvement of the molecular beam epitaxial growth of zinc-blende CdSe on (0 0 1) GaAs substrate with a large lattice mismatch by introducing a small amount of Te atoms. Exposing the growing surface to Te atoms changes the reflection high-energy electron diffraction pattern from spotty to streaky together with (2 × 1) surface reconstruction, and greatly reduces the full width at half maximum of the X-ray rocking curve and increases the integral intensity of room-temperature photoluminescence by a factor of about nine.

  1. The limitations of seedling growth and drought tolerance to novel soil substrates in arid systems: Implications for restoration success

    Science.gov (United States)

    Bateman, Amber; Lewandrowski, Wolfgang; Stevens, Jason; Muñoz-Rojas, Miriam

    2016-04-01

    Introduction With the limited knowledge available regarding the impact of drought on seedling growth, an understanding of seedling tolerance to arid conditions is crucial for restoration success (James et al., 2013; Muñoz-Rojas et al., 2014). However, restoration in semi-arid areas faces the challenge of re-establishing plant communities on altered soil substrates (Muñoz-Rojas et al., 2015). These substrates are a result of anthropogenic disturbances such as mining which have altered the plant-soil-water dynamics of the ecosystem (Machado et al., 2013). The aim of this study was to assess the impact of mining on the plant-soil-water dynamics of an arid ecosystem of Western Australia (Pilbara region, North Western Australia) and the implications these altered relationships have on seedling growth and their responses to drought. Methods Drought responses of native plant species were assessed through a series of glasshouse experiments. Firstly, 21 species dominant to the Pilbara region were subjected to drought in a topsoil growth media to assess variation in responses (leaf water potential at the time of stomatal closure) across species and identify traits associated with drought tolerance. Secondly, four species ranging in their drought tolerance identified previously, were grown to two leaf stages (second and fourth leaf stage) in three mining substrates (topsoil, a topsoil and waste mix and waste) to assess seedling drought responses to various potential restoration substrates and how that varied with plant development stage. Results and discussion Four morphological traits were found to be significantly associated with drought indicators (leaf mass ratio, stem area, stem length, stem weight), however, these were weak correlations. Waste substrate and its addition to topsoil reduced plant total biomass but did not alter species responses to drought. However, the soil physical properties of the waste reduced water retention and water availability for plant uptake

  2. The influence of substrate source on the growth of Ralstonia eutropha, aiming at the production of polyhydroxyalkanoate

    Directory of Open Access Journals (Sweden)

    Marangoni C.

    2001-01-01

    Full Text Available With the aim of producing polyhydroxyalkanoates, a study of the influence of culture conditions (nitrogen and carbon sources and temperature on the growth of Ralstonia eutropha in stirred flasks was carried out and the use of some low-cost sources (hydrolyzed lactose, inverted sugar and corn steep liquor as evaluated. The best specific growth rate was obtained when inverted sugar was utilized as the substrate (mumax = 0.26 h-1. Two different phases in the assimilation of the carbon source were observed when hydrolyzed lactose was present, suggesting the assimilation first of glucose and then of galactose. To confirm the growth of Ralstonia eutropha using galactose as the only carbon source, experiments were carried out and the results showed that this bacterium is able to grow in the presence of this sugar at a growth rate of 0.13 h-1. The use of galactose by Ralstonia eutropha for its growth has not been reported in the literature until now. Corn steep liquor was found to be a viable alternative nitrogen source to ammonium sulfate. The results of experiments carried out at 30°C and 34°C were similar.

  3. Nucleation and Growth of GaN on GaAs (001) Substrates

    International Nuclear Information System (INIS)

    Drummond, Timothy J.; Hafich, Michael J.; Heller, Edwin J.; Lee, Stephen R.; Liliental-Weber, Zuzanna; Ruvimov, Sergei; Sullivan, John P.

    1999-01-01

    The nucleation of GaN thin films on GaAs is investigated for growth at 620 ''C. An rf plasma cell is used to generate chemically active nitrogen from N 2 . An arsenic flux is used in the first eight monolayer of nitride growth to enhance nucleation of the cubic phase. Subsequent growth does not require an As flux to preserve the cubic phase. The nucleation of smooth interfaces and GaN films with low stacking fault densities is dependent upon relative concentrations of active nitrogen species in the plasma and on the nitrogen to gallium flux ratio

  4. Gold nanoparticle growth control - Implementing novel wet chemistry method on silicon substrate

    KAUST Repository

    Al-Ameer, Ammar; Katsiev, Habib; Sinatra, Lutfan; Hussein, Irshad; Bakr, Osman

    2013-01-01

    Controlling particle size, shape, nucleation, and self-assembly on surfaces are some of the main challenges facing electronic device fabrication. In this work, growth of gold nanoparticles over a wide range of sizes was investigated by using a novel

  5. Relationships between stem CO2 efflux, substrate supply, and growth in young loblolly pine trees

    Science.gov (United States)

    Chris A. Maier; Kurt H. Johnsen; Barton D. Clinton; Kim H. Ludovici

    2009-01-01

    We examined the relationships between stem CO2 efflux (Es), diametergrowth, and nonstructural carbohydrate concentration in loblolly pine trees. Carbohydratesupply was altered via stem girdling during rapid stem growth in the

  6. Epitaxial growth of silicon and germanium on (100-oriented crystalline substrates by RF PECVD at 175 °C

    Directory of Open Access Journals (Sweden)

    Mauguin O.

    2012-11-01

    Full Text Available We report on the epitaxial growth of crystalline Si and Ge thin films by standard radio frequency plasma enhanced chemical vapor deposition at 175 °C on (100-oriented silicon substrates. We also demonstrate the epitaxial growth of silicon films on epitaxially grown germanium layers so that multilayer samples sustaining epitaxy could be produced. We used spectroscopic ellipsometry, Raman spectroscopy, transmission electron microscopy and X-ray diffraction to characterize the structure of the films (amorphous, crystalline. These techniques were found to provide consistent results and provided information on the crystallinity and constraints in such lattice-mismatched structures. These results open the way to multiple quantum-well structures, which have been so far limited to few techniques such as Molecular Beam Epitaxy or MetalOrganic Chemical Vapor Deposition.

  7. Influence of AlGaN Buffer Growth Temperature on GaN Epilayer based on Si(lll) Substrate

    International Nuclear Information System (INIS)

    Wei Meng; Wang Xiaoliang; Pan Xu; Xiao Hongling; Wang Cuimei; Zhang Minglan; Wang Zhanguo

    2011-01-01

    This paper investigated the influence of AlGaN buffer growth temperature on strain status and crystal quality of the GaN film on Si(111) sbustrates by metal organic chemical vapor deposition. It was demonstrated by the optical microscopy that AlGaN buffer gorwth temperature had a remarkable effect on compensating tensil stress in top GaN layer and preventing the formation of cracks. X-ray diffraction and atomic force microscopy analysis showed crystal quality and surface morphology of the GaN epilayer could be improved through increasing AlGaN buffer growth temperature. 1μm crack-free GaN epilayer on Si (111) substrates was obtained with graded AlGaN buffer layer at optimized temperature of 1050 deg. C. Transmission electron microscopy analysis revealed that a significant reduction in threading dislocations was achieved in GaN epilayer.

  8. Temperature dependence of InN growth on (0001) sapphire substrates by atmospheric pressure hydride vapor phase epitaxy

    International Nuclear Information System (INIS)

    Kumagai, Yoshinao; Adachi, Hirokazu; Otake, Aya; Higashikawa, Yoshihiro; Togashi, Rie; Murakami, Hisashi; Koukitu, Akinori

    2010-01-01

    The temperature dependence of InN growth on (0001) sapphire substrates by atmospheric pressure hydride vapor phase epitaxy (HVPE) was investigated. N-polarity single-crystal InN layers were successfully grown at temperatures ranging from 400 to 500 C. The a and c lattice constants of InN layers grown at 450 C or below were slightly larger than those of InN layers grown above 450 C due to oxygen incorporation that also increased the carrier concentration. The optical absorption edge of the InN layer decreased from above 2.0 to 0.76 eV when the growth temperature was increased from 450 to 500 C. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  9. Effect of substrate material on the growth and field emission characteristics of large-area carbon nanotube forests

    Energy Technology Data Exchange (ETDEWEB)

    Ummethala, Raghunandan; Täschner, Christine; Leonhardt, Albrecht; Büchner, Bernd [IFW Dresden, P.O. Box 270116, D-01171 Dresden (Germany); Wenger, Daniela; Tedde, Sandro F. [Siemens Healthcare GmbH, Technology Centre, Guenther-Scharowsky-Strasse 1, 91058 Erlangen (Germany); Eckert, Jürgen [Erich Schmid Institute of Materials Science, Austrian Academy of Sciences, Jahnstrasse 12, A-8700 Leoben (Austria); Department Materials Physics, Montanuniversität Leoben, Jahnstraße 12, A-8700 Leoben (Austria)

    2016-01-28

    Carbon nanotubes (CNTs) are a promising replacement for tungsten filaments as electron emitters in conventional x-ray sources, owing to their higher aspect ratio, superior mechanical stability, chemical inertness, and high electrical and thermal conductivities. Conditions for realizing the best emission behavior from CNTs have been formulated over the last few years. In this paper, we report the relatively less-investigated factor, namely, the influence of the nature of substrate material on the growth as well as field emission characteristics of large-area multiwalled CNTs for their practical application in medical x-ray sources. We compare the morphology of CNTs on a variety of substrates such as stainless steel, copper, molybdenum, graphite, few-layer graphene, and carbon nanowalls grown by thermal chemical vapor deposition following a simple drop-coating of catalyst. We find that CNTs grown on stainless steel and graphite show the best combination of emission characteristics under pulsed operation mode. These studies are helpful in selecting the optimum substrate material for field emission applications. Ex situ studies on field emission degradation of CNTs are presented towards the end.

  10. Effect of substrate material on the growth and field emission characteristics of large-area carbon nanotube forests

    Science.gov (United States)

    Ummethala, Raghunandan; Wenger, Daniela; Tedde, Sandro F.; Täschner, Christine; Leonhardt, Albrecht; Büchner, Bernd; Eckert, Jürgen

    2016-01-01

    Carbon nanotubes (CNTs) are a promising replacement for tungsten filaments as electron emitters in conventional x-ray sources, owing to their higher aspect ratio, superior mechanical stability, chemical inertness, and high electrical and thermal conductivities. Conditions for realizing the best emission behavior from CNTs have been formulated over the last few years. In this paper, we report the relatively less-investigated factor, namely, the influence of the nature of substrate material on the growth as well as field emission characteristics of large-area multiwalled CNTs for their practical application in medical x-ray sources. We compare the morphology of CNTs on a variety of substrates such as stainless steel, copper, molybdenum, graphite, few-layer graphene, and carbon nanowalls grown by thermal chemical vapor deposition following a simple drop-coating of catalyst. We find that CNTs grown on stainless steel and graphite show the best combination of emission characteristics under pulsed operation mode. These studies are helpful in selecting the optimum substrate material for field emission applications. Ex situ studies on field emission degradation of CNTs are presented towards the end.

  11. CVD growth of large-area and high-quality HfS2 nanoforest on diverse substrates

    Science.gov (United States)

    Zheng, Binjie; Wang, Zegao; Qi, Fei; Wang, Xinqiang; Yu, Bo; Zhang, Wanli; Chen, Yuanfu

    2018-03-01

    Two-dimensional layered transition metal dichalcogenides (TMDs) have attracted burgeoning attention due to their various properties and wide potential applications. As a new TMD, hafnium disulfide (HfS2) is theoretically predicted to have better electrical performance than widely studied MoS2. The experimental researches also confirmed the extraordinary feature in electronics and optoelectronics. However, the maximal device performance may not be achieved due to its own limitation of planar structure and challenge of transfer without contamination. Here, through the chemical vapor deposition (CVD) technique, inch-size HfS2 nanoforest has been directly grown on diverse objective substrates covering insulating, semiconducting and conducting substrates. This direct CVD growth without conventional transfer process avoids contamination and degradation in quality, suggesting its promising and wide applications in high-quality and multifarious devices. It is noted that all the HfS2 nanoforests grown on diverse substrates are constructed with vertically aligned few-layered HfS2 nanosheets with high crystalline quality and edge orientation. Moreover, due to its unique structure, the HfS2 nanoforest owns abundant exposed edge sites and large active surface area, which is essential to apply in high-performance catalyst, sensor, and energy storage or field emitter.

  12. Characterization and growth mechanism of nonpolar and semipolar GaN layers grown on patterned sapphire substrates

    International Nuclear Information System (INIS)

    Okada, Narihito; Tadatomo, Kazuyuki

    2012-01-01

    Nonpolar and semipolar GaN layers with markedly improved crystalline quality can be obtained by selective-area growth from the sapphire sidewalls of patterned sapphire substrates (PSSs). In this paper, we review the crystalline qualities of GaN layers grown on PSSs and their growth mechanism. We grew semipolar {1 1 −2 2} and {1 0 −1 1} GaN layers on r- and n-PSSs. The crystalline qualities of the GaN layers grown on the PSSs were higher than those of GaN layers grown directly on heteroepitaxial substrates. To reveal the growth mechanism of GaN layers grown on PSSs, we also grew various nonpolar and semipolar GaN layers such as m-GaN on a-PSS, {1 1 −2 2} GaN on r-PSS, {1 0 − 1  1} GaN on n-PSS, m-GaN on c-PSS and a-GaN on m-PSS. It was found that the nucleation of GaN on the c-plane-like sapphire sidewall results in selective growth from the sapphire sidewall, and nonpolar or semipolar GaN can be obtained. Finally, we demonstrated a light-emitting diode fabricated on a {1 1 −2 2} GaN layer grown on an r-PSS. (paper)

  13. The growth of aligned carbon nanotubes on quartz substrate by spray pyrolysis of hexane

    International Nuclear Information System (INIS)

    Sadeghian, Zahra

    2008-01-01

    Vertically aligned multiwall carbon nanotubes were grown by spray pyrolysis of hexane as the carbon source in the presence of ferrocene as catalyst precursor on a quartz substrate. In recent work we used optimal experimental parameters for the feeding method, reactor conditions, reaction temperature and time, concentration of catalyst and flow rate of feed and gas. The process parameters were chosen so as to obtain multiwall carbon nanotubes and aligned multiwall carbon nanotubes. The tubes are around 15-80 nm in diameter. The morphology and structure of the samples were characterized by x-ray diffraction, Raman spectroscopy, scanning electron microscopy, and transmission electron microscopy analyses

  14. Impact of the silicon substrate resistivity and growth condition on the deep levels in Ni-Au/AlN/Si MIS Capacitors

    Science.gov (United States)

    Wang, Chong; Simoen, Eddy; Zhao, Ming; Li, Wei

    2017-10-01

    Deep levels formed under different growth conditions of a 200 nm AlN buffer layer on B-doped Czochralski Si(111) substrates with different resistivity were investigated by deep-level transient spectroscopy (DLTS) on metal-insulator-semiconductor capacitors. Growth-temperature-dependent Al diffusion in the Si substrate was derived from the free carrier density obtained by capacitance-voltage measurement on samples grown on p- substrates. The DLTS spectra revealed a high concentration of point and extended defects in the p- and p+ silicon substrates, respectively. This indicated a difference in the electrically active defects in the silicon substrate close to the AlN/Si interface, depending on the B doping concentration.

  15. Molecular beam epitaxy of quasi-freestanding transition metal disulphide monolayers on van der Waals substrates: a growth study

    Science.gov (United States)

    Hall, Joshua; Pielić, Borna; Murray, Clifford; Jolie, Wouter; Wekking, Tobias; Busse, Carsten; Kralj, Marko; Michely, Thomas

    2018-04-01

    Based on an ultra-high vacuum compatible two-step molecular beam epitaxy synthesis with elemental sulphur, we grow clean, well-oriented, and almost defect-free monolayer islands and layers of the transition metal disulphides MoS2, TaS2 and WS2. Using scanning tunneling microscopy and low energy electron diffraction we investigate systematically how to optimise the growth process, and provide insight into the growth and annealing mechanisms. A large band gap of 2.55 eV and the ability to move flakes with the scanning tunneling microscope tip both document the weak interaction of MoS2 with its substrate consisting of graphene grown on Ir(1 1 1). As the method works for the synthesis of a variety of transition metal disulphides on different substrates, we speculate that it could be of great use for providing hitherto unattainable high quality monolayers of transition metal disulphides for fundamental spectroscopic investigations.

  16. Growth-substrate induced performance degradation in chemically synthesized monolayer MoS{sub 2} field effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Amani, Matin; Chin, Matthew L.; Mazzoni, Alexander L.; Burke, Robert A.; Dubey, Madan, E-mail: madan.dubey.civ@mail.mil [Sensors and Electron Devices Directorate, US Army Research Laboratory, Adelphi, Maryland 20723 (United States); Najmaei, Sina; Ajayan, Pulickel M.; Lou, Jun [Department of Materials Science and Nanoengineering, Rice University, Houston, Texas 77005 (United States)

    2014-05-19

    We report on the electronic transport properties of single-layer thick chemical vapor deposition (CVD) grown molybdenum disulfide (MoS{sub 2}) field-effect transistors (FETs) on Si/SiO{sub 2} substrates. MoS{sub 2} has been extensively investigated for the past two years as a potential semiconductor analogue to graphene. To date, MoS{sub 2} samples prepared via mechanical exfoliation have demonstrated field-effect mobility values which are significantly higher than that of CVD-grown MoS{sub 2}. In this study, we will show that the intrinsic electronic performance of CVD-grown MoS{sub 2} is equal or superior to that of exfoliated material and has been possibly masked by a combination of interfacial contamination on the growth substrate and residual tensile strain resulting from the high-temperature growth process. We are able to quantify this strain in the as-grown material using pre- and post-transfer metrology and microscopy of the same crystals. Moreover, temperature-dependent electrical measurements made on as-grown and transferred MoS{sub 2} devices following an identical fabrication process demonstrate the improvement in field-effect mobility.

  17. Theoretical Investigation on Structural and Electronic Properties of InN Growth on Ce-Stabilized Zirconia (111 Substrates

    Directory of Open Access Journals (Sweden)

    Yao Guo

    2016-01-01

    Full Text Available The structural and electronic properties of InN on Ce-stabilized zirconia (CeSZ (111 substrates are investigated using first-principles calculations based on density functional theory with GGA + U method. Surface energy calculations indicate that the structure of Ce-segregated surface is more energetically stable than that of Ce-segregation-free surface. Adsorption energies of indium and nitrogen atoms on both Ce-segregated and Ce-segregation-free CeSZ (111 surfaces at the initial growth stage have been studied. The results suggest that the first layer of InN films consists of a nitrogen layer, which leads to epitaxial relationships between InN (0001 // CeSZ (111 and InN [112¯0] // CeSZ [11¯0]. In addition, density of states (DOS analysis revealed that the hybridization effect plays a crucial role in determining the interface structure for the growth of InN on CeSZ (111 surfaces. Furthermore, adsorption energies of indium atoms on the nitrogen layer have also been evaluated in order to investigate the lattice polarity determination for InN films. It was found that an indium atom preferentially adsorbs at the center of three nitrogen atoms stacked on the CeSZ substrate, which results in the formation of In-polarity InN.

  18. Growth of ZnO nanowire arrays directly onto Si via substrate topographical adjustments using both wet chemical and dry etching methods

    Energy Technology Data Exchange (ETDEWEB)

    Smith, Nathan A., E-mail: 523615@swansea.ac.uk [Centre for Nanohealth, Department of Physics, College of Science, University of Swansea, Singleton Park SA2 8PP United Kingdom (United Kingdom); Evans, Jon E.; Jones, Daniel R. [Multidisciplinary Nanotechnology Centre, College of Engineering, University of Swansea, Singleton Park, SA2 8PP United Kingdom (United Kingdom); Lord, Alex M. [Centre for Nanohealth, College of Engineering, University of Swansea, Singleton Park, SA2 8PP United Kingdom (United Kingdom); Wilks, S.P. [Centre for Nanohealth, Department of Physics, College of Science, University of Swansea, Singleton Park SA2 8PP United Kingdom (United Kingdom)

    2015-03-15

    Highlights: • Arrays of catalyst-free ZnO NWs have been grown by CVD without seed layers on Si. • Si surface topography was altered by substrate etching, resulting in NW growth. • XPS analysis shows growth is related to topography and not surface contamination. • Using e-beam lithography with etching, selective nanowire growth is demonstrated. • Electrical measurements on the arrays show improved conduction through the Si. - Abstract: Arrays of CVD catalyst-free ZnO nanowires have been successfully grown without the use of seed layers, using both wet chemical and dry plasma etching methods to alter surface topography. XPS analysis indicates that the NW growth cannot be attributed to a substrate surface chemistry and is therefore directly related to the substrate topography. These nanowires demonstrate structural and optical properties typical of CVD ZnO nanowires. Moreover, the NW arrays exhibit a degree of vertical alignment of less than 20° from the substrate normal. Electrical measurements suggest an improved conduction path through the substrate over seed layer grown nanowires. Furthermore, the etching technique was combined with e-beam lithography to produce high resolution selective area nanowire growth. The ability to pattern uniform nanowires using mature dry etch technology coupled with the increased charge transport through the substrate demonstrates the potential of this technique in the vertical integration of nanowire arrays.

  19. Cowpeas as growth substrate do not support the production of aflatoxinby Aspergillus sp

    DEFF Research Database (Denmark)

    Houssou, P.A.; Schnidt-Heydt, M.; Geisen, R.

    2008-01-01

    A number of 21 Aspergillus sp. strains isolated from cowpeas from Benin (Africa) were characterizedby RAPD methodology. Seven of these strains grouped with A. flavus in the dendrogram generated with the RAPD data. Only three were able to produce aflatoxin in significant amounts. Twelve other...... produced high amounts of aflatoxin after growth on YES medium. However after growth on cowpea based medium aflatoxin biosynthesis was strongly ceased, albeit the growth of the colony was only partly reduced. This was true for media made either with the whole cowpea seed or with cowpea seed without seed...... coat. Interestingly when the cowpea medium was heat sterilized the fungus was able to produce high amounts of aflatoxin. This, however, was not the case after the use of gamma irradiation as sterilization method for the medium. The expression of the nor-1 gene, which is one of the early genes involved...

  20. Growth and domain structure of YBa2Cu3Ox films on neodymium gallate substrates with deviation of surface normal from [110] NdGaO3

    International Nuclear Information System (INIS)

    Bdikin, I.K.; Mozhaev, P.B.; Ovsyannikov, G.A.; Komissinskij, F.V.; Kotelyanskij, I.M.; Raksha, E.I.

    2001-01-01

    One investigated into growth, crystalline structure and electrophysical properties of YBa 2 Cu 3 O x (YBCO) epitaxial films grown on NdGaO 3 (NGO) substrates with substrate surface normal deviation from [110] by 5-26.6 deg angle around [001] with CeO 2 epitaxial sublayer or without it. Orientation of YBCO epitaxial films grown at these substrates is shown to be governed by occurrence of symmetrically equipment directions in substrates and in CeO 2 layer, as well as, by film precipitation rate. At precipitation high rate YBCO films on CeO 2 sublayer grow in [001] orientation independently of orientation of substrate and sublayer. One determined that at increase of substrate plane deviation angle from (110) NGO twinning of one or of both twin complexes in YBCO might be suppressed [ru

  1. Growth of InAs Quantum Dots on Germanium Substrate Using Metal Organic Chemical Vapor Deposition Technique

    Directory of Open Access Journals (Sweden)

    Tyagi Renu

    2009-01-01

    Full Text Available Abstract Self-assembled InAs quantum dots (QDs were grown on germanium substrates by metal organic chemical vapor deposition technique. Effects of growth temperature and InAs coverage on the size, density, and height of quantum dots were investigated. Growth temperature was varied from 400 to 450 °C and InAs coverage was varied between 1.40 and 2.35 monolayers (MLs. The surface morphology and structural characteristics of the quantum dots analyzed by atomic force microscope revealed that the density of the InAs quantum dots first increased and then decreased with the amount of InAs coverage; whereas density decreased with increase in growth temperature. It was observed that the size and height of InAs quantum dots increased with increase in both temperature and InAs coverage. The density of QDs was effectively controlled by growth temperature and InAs coverage on GaAs buffer layer.

  2. Growth of n-alkane films on a single-crystal substrate

    DEFF Research Database (Denmark)

    Wu, Z. U.; Ehrlich, S. N.; Matthies, B.

    2001-01-01

    The structure and growth mode of alkane films (n-C/sub n/H/sub 2n+2/; n=4, 6, 7) adsorbed on a Ag(111) surface have been investigated by synchrotron X-ray scattering. New models are proposed for the butane (n=4) and hexane (n=6) monolayer and butane bilayer structures. Specular reflectivity scans...... reveal that growth of all films is preempted between two and three layers by nucleation of bulk particles oriented with a single bulk crystal plane parallel to the film. In the case of butane, the bulk particles also have a fixed azimuthal relationship with the film resulting in complete epitaxy....

  3. Gas Diffusivity-Based Design and Characterization of Greenhouse Growth Substrates

    DEFF Research Database (Denmark)

    Deepagoda Thuduwe Kankanamge Kelum, Chamindu; Møldrup, Per; Tuller, Markus

    2013-01-01

    combinations thereof, are commonly used as growth media, detailed and comparable physical characterization is key to identify the best performing media. In this study, five potential growth media and two mixtures thereof were characterized based on soil gas diffusivity (Dp/Do, where Dp and Do are gas diffusion...... coefficients in soil air and free air, respectively) and an operationally defined critical window of diffusivity (CWD) representing the interval of air-filled porosity between critical air filled porosity where Dp/Do ≈ 0.02 and interaggregate porosity. The Dp measurements were conducted with 100-cm3 samples...

  4. Impact of phenolic substrate and growth temperature on the arthrobacter chlorophenolicus proteome

    Energy Technology Data Exchange (ETDEWEB)

    Unell, Maria; Abraham, Paul E.; Shah, Manesh; Zhang, Bing; Ruckert, Christian; VerBerkmoes, Nathan C.; Jansson, Janet K.

    2009-02-15

    We compared the Arthrobacter chlorophenolicus proteome during growth on 4-chlorophenol, 4-nitrophenol or phenol at 5 C and 28 C; both for the wild type and a mutant strain with mass spectrometry based proteomics. A label free workflow employing spectral counting identified 3749 proteins across all growth conditions, representing over 70% of the predicted genome and 739 of these proteins form the core proteome. Statistically significant differences were found in the proteomes of cells grown under different conditions including differentiation of hundreds of unknown proteins. The 4-chlorophenol-degradation pathway was confirmed, but not that for phenol.

  5. Growth and lipid production of Umbelopsis isabellina on a solid substrate - Mechanistic modeling and validation

    NARCIS (Netherlands)

    Meeuwse, P.; Klok, A.J.; Haemers, S.; Tramper, J.; Rinzema, A.

    2012-01-01

    Microbial lipids are an interesting feedstock for biodiesel. Their production from agricultural waste streams by fungi cultivated in solid-state fermentation may be attractive, but the yield of this process is still quite low. In this article, a mechanistic model is presented that describes growth,

  6. Growth strategy of heterotrophic bacterial population along successional sequence on spoil of brown coal colliery substrate

    Czech Academy of Sciences Publication Activity Database

    Krištůfek, Václav; Elhottová, Dana; Chroňáková, Alica; Dostálková, I.; Picek, T.; Kalčík, Jiří

    2005-01-01

    Roč. 50, č. 5 (2005), s. 427-435 ISSN 0015-5632 R&D Projects: GA ČR(CZ) GA526/03/1259 Institutional research plan: CEZ:AV0Z60660521 Keywords : growth strategy * heterotrophic bacterial population * brown coal colliery spoil Subject RIV: EH - Ecology, Behaviour Impact factor: 0.918, year: 2005

  7. Dual substrate feedback control of specific growth-rate in vaccine production

    NARCIS (Netherlands)

    Neeleman, R.; Beuvery, E.C.; Vries, D.; Straten, van G.; Boxtel, van A.J.B.

    2004-01-01

    Abstract: Unexpectedly, primary concern of bio-pharmaceutical industry is not optimisation of product yield or cost reduction, but consistency in production and product quality. This paper describes the methodology and experimental results of specific growth-rate control for vaccine production. The

  8. Microbial ecology of extreme environments: Antarctic dry valley yeasts and growth in substrate limited habitats

    Science.gov (United States)

    Vishniac, H. S.

    1981-01-01

    The multiple stresses temperature, moisture, and for chemoheterotrophs, sources of carbon and energy of the Dry Valley Antarctica soils allow at best depauperate communities, low in species diversity and population density. The nature of community structure, the operation of biogeochemical cycles, the evolution and mechanisms of adaptation to this habitat are of interest in informing speculations upon life on other planets as well as in modeling the limits of gene life. Yeasts of the Cryptococcus vishniacil complex (Basidiobiastomycetes) are investigated, as the only known indigenes of the most hostile, lichen free, parts of the Dry Valleys. Methods were developed for isolating these yeasts (methods which do not exclude the recovery of other microbiota). The definition of the complex was refined and the importance of nitrogen sources was established as well as substrate competition in fitness to the Dry Valley habitats.

  9. Growth and Transfer of Monolithic Horizontal ZnO Nanowire Superstructures onto Flexible Substrates

    KAUST Repository

    Xu, Sheng

    2010-04-28

    A method of fabricating horizontally aligned ZnO nanowire (NW) arrays with full control over the width and length is demonstrated. A cross-sectional view of the NWs by transmission electron microscopy shows a "mushroom-like" structure. Novel monolithic multisegment superstructures are fabricated by making use of the lateral overgrowth. Ultralong horizontal ZnO NWs of an aspect ratio on the order often thousand are also demonstrated. These horizontal NWs are lifted off and transferred onto a flexible polymer substrate, which may have many great applications in horizontal ZnO NW-based nanosensor arrays, light-emitting diodes, optical gratings, integrated circuit interconnects, and high-output-power alternating-current nanogenerators. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA.

  10. GaMnAs on patterned GaAs(001) substrates: Growth and magnetotransport

    Energy Technology Data Exchange (ETDEWEB)

    Daeubler, Joachim; Glunk, Michael; Hummel, Thomas; Schoch, Wladimir; Limmer, Wolfgang; Sauer, Rolf [Institut fuer Halbleiterphysik, Universitaet Ulm, 89069 Ulm (Germany)

    2007-07-01

    A new type of GaMnAs microstructures with laterally confined electronic and magnetic properties has been realized in a bottom-up procedure by growing GaMnAs films on [1 anti 10]-oriented ridge structures with (113)A sidewalls and (001) top layers prepared on GaAs(001) substrates. Previous studies on planar GaMnAs samples have revealed different incorporation of Mn and excess As in (001) and (113)A layers. Accordingly, temperature- and field-dependent magnetotransport measurements on the overgrown ridge structures clearly demonstrate the coexistence of electronic and magnetic properties specific for (001) and (113)A GaMnAs in one single sample. This introduces an additional degree of freedom in the development of new functional structures.

  11. Electrochemical behaviour and nanoscale characteristics of CNT-based fibers as new substrate for cell growth

    Energy Technology Data Exchange (ETDEWEB)

    Polizu, S.; Yahia, L.H. [Ecole Polytechnique de Montreal, PQ (Canada). Laboratoire d' innovation et d' analyse de la bioperformance; Savadogo, O. [Ecole Polytechnique de Montreal, Montreal, PQ (Canada). Laboratoire de nouveaux materiaux pour l' energie et l' electrochimie; Maugey, M.; Poulin, P. [Centre de Recherche Paul Pascal, CNRS, Bordeaux (France); Rouabhia, M. [Laval Univ., Quebec City, PQ (Canada). Faculty of Medicine

    2008-07-01

    This paper reported on a study in which carbon nanotube (CNT) macroscopic fibers were formulated by a newly developed non-covalent method for fabricating fibrous substrate. The covalent and noncovalent chemistry of CNTs has been widely used in the development of CNT-based biomaterials as active substrates for living cells. Time of Flight Mass Spectroscopy (TOF-SIMS) analysis was used to determine the surface characteristics of the CNT-based fibers produced by wet spinning method. The structure and texture of fibers were imaged using Low-Vacuum Scanning Electron Microscopy (LV-SEM) equipped with an Energy Dispersive Spectrometer (EDS) for microanalysis. Atomic Force Microscopy (AFM) imaging revealed the structure of fibers. Cyclic Voltametry (CV) measurements were performed to examine the electrochemical behaviour of fibers. Sulfuric acid and a cell culture medium was used as the 2 different electrolytes. The influences of environmental parameters on the electrochemical phenomena taking place were identified. The intrinsic electrochemical characteristics of fibers were revealed through measurements in acid environment. The cell culture medium simulated the physiological conditions. It was concluded that the newly developed wet spinning method is very efficient for making CNT-based fibers as electroactive biomaterials. The structural nanoscale details evidenced a good alignment of nanotubes in the thread and the critical role it plays in electrochemical interactions. The differences induced by the variation of electrolytes suggest that a relationship could be established between the fiber chemistry and the electrochemical response. This correlation has considerably potential for the design of new biomedical devices. 2 refs.

  12. Controlling growth rate anisotropy for formation of continuous ZnO thin films from seeded substrates

    International Nuclear Information System (INIS)

    Zhang, R H; Slamovich, E B; Handwerker, C A

    2013-01-01

    Solution-processed zinc oxide (ZnO) thin films are promising candidates for low-temperature-processable active layers in transparent thin film electronics. In this study, control of growth rate anisotropy using ZnO nanoparticle seeds, capping ions, and pH adjustment leads to a low-temperature (90 ° C) hydrothermal process for transparent and high-density ZnO thin films. The common 1D ZnO nanorod array was grown into a 2D continuous polycrystalline film using a short-time pure solution method. Growth rate anisotropy of ZnO crystals and the film morphology were tuned by varying the chloride (Cl − ) ion concentration and the initial pH of solutions of zinc nitrate and hexamethylenetetramine (HMTA), and the competitive adsorption effects of Cl − ions and HMTA ligands on the anisotropic growth behavior of ZnO crystals were proposed. The lateral growth of nanorods constituting the film was promoted by lowering the solution pH to accelerate the hydrolysis of HMTA, thereby allowing the adsorption effects from Cl − to dominate. By optimizing the growth conditions, a dense ∼100 nm thickness film was fabricated in 15 min from a solution of [Cl − ]/[Zn 2+ ] = 1.5 and pH= 4.8 ± 0.1. This film shows >80% optical transmittance and a field-effect mobility of 2.730 cm 2 V −1 s −1 at zero back-gate bias. (paper)

  13. Real-time optical modelling and investigation of inorganic nano-layer growth onto flexible polymeric substrates

    International Nuclear Information System (INIS)

    Laskarakis, A.; Georgiou, D.; Logothetidis, S.

    2010-01-01

    A major factor for the achievement of the desirable performance, efficiency and lifetime of flexible organic electronic devices is the optimization of the encapsulation layers that protect the device active layers by atmospheric gas molecule permeation. The active layers consisted of small molecule and/or polymer organic semiconductors as well as the organic conductors need to be encapsulated into a transparent medium that will provide the necessary protection and maintain their charge generation and transport characteristics. The encapsulation layers are generally consisted of inorganic thin films (silicon oxide-SiO x and aluminium oxide-AlO x ) deposited onto the polymeric substrates, such as PolyEthylene Terephthalate (PET). In this work, in situ and real-time Spectroscopic Ellipsometry in the ultraviolet spectral region has been implemented in order to investigate the growth of inorganic SiO x and AlO x nano-layers onto PET flexible polymeric substrates as well as the PET/inorganic interface effects during the early stages of growth. The analysis of the pseudodielectric function that was measured in real-time in very short time scales (in the order of hundreds of ms) has provided detailed information on the time evolution of the thickness and deposition rate of the inorganic nano-layers during their growth process as well as on their optical and electronic properties. This work proposes a methodology for using real-time optical monitoring technique with the aim to tailor and control the functionality of these materials for application in flexible electronic devices.

  14. Growth of cubic GaN on a nitrided AlGaAs (001) substrate by using hydried vapor phase epitaxy

    International Nuclear Information System (INIS)

    Lee, H. J.; Yang, M.; Ahn, H. S.; Kim, K. H.; Yi, J. Y.; Jang, K. S.; Chang, J. H.; Kim, H. S.; Cho, C. R.; Kim, S. W.

    2006-01-01

    GaN layers were grown on AlGaAs (001) substrates by using hydride vapor phase epitaxy (HVPE). Growth parameters such as the nitridation temperature of the AlGaAs substrate and the growth rate of the GaN layer were found to be critical determinants for the growth of cubic GaN layer. Nitridation of the AlGaAs surface was performed in a NH 3 atmosphere at a temperature range of 550 - 700 .deg. C. GaN layers were grown at different growth rates on the nitrided AlGaAs substrates. The surface morphologies and the chemical constituents of the nitrided AlGaAs layers were characterized with scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS). For the optical and the crystalline characterization of the GaN films, cathodoluminescence (CL) and X-ray diffraction (XRD) were carried out.

  15. Dysprosium-Catalyzed Growth of Single-Walled Carbon Nanotube Arrays on Substrates

    Directory of Open Access Journals (Sweden)

    Qian Yong

    2009-01-01

    Full Text Available Abstract In this letter, we report that dysprosium is an effective catalyst for single-walled carbon nanotubes (SWNTs growth via a chemical vapor deposition (CVD process for the first time. Horizontally superlong well-oriented SWNT arrays on SiO2/Si wafer can be fabricated by EtOH-CVD under suitable conditions. The structure and properties are characterized by scanning electron microscopy, transition electron microscopy, Raman spectroscopy and atomic force microscopy. The results show that the SWNTs from dysprosium have better structural uniformity and better conductivity with fewer defects. This rare earth metal provides not only an alternative catalyst for SWNTs growth, but also a possible method to generate high percentage of superlong semiconducting SWNT arrays for various applications of nanoelectronic device.

  16. Population Growth Parameters of Tuta absoluta (Lepidoptera: Gelechiidae) on Tomato Plant Using Organic Substrate and Biofertilizers.

    Science.gov (United States)

    Mohamadi, P; Razmjou, J; Naseri, B; Hassanpour, M

    2017-01-01

    The tomato leafminer, Tuta absoluta (Meyrick) is a devastating pest associated with tomato. In this study, effects of tomato plants treated with vermicompost (20, 40, and 60%), humic fertilizer (2, 4 and 6 g/kg soil) and plant growth promoting rhizobacteria (Pseudomonas fluorescens and Bacillus subtilis) were investigated on the life table parameters of T. absoluta in a growth chamber at 25 ± 2 °C, 65 ± 5% RH, and 16:8 (L:D) h. Significant differences were found for the total developmental time, fecundity, and oviposition period of T. absoluta on the treatments tested. The net reproductive rate (R0), intrinsic rate of natural increase (rm), finite rate of increase (λ), mean generation time (T), and doubling time (DT) of T. absoluta were significantly different among treatments tested. We found that in all vermicompost, humic fertilizer and plant growth promoting rhizobacteria treatments, values of R0, rm, and λ were lower than control treatment. However, the lowest values of these parameters were obtained on 2 g/kg humic fertilizer and 40% vermicompost. Furthermore, T. absoluta had longest T and DT values on 2 g/kg humic fertilizer treatment. Data obtained showed that the addition of 2 g/kg humic fertilizer and 40% vermicompost to the growing soil reduced T. absoluta populations in tomato cultures. In addition, these levels of fertilizers improved growth parameters of tomato seedlings (plant height, wet weight, and dry weight) compared with other treatments. These results could be useful in improving the sustainable management of the moth. © The Author 2017. Published by Oxford University Press on behalf of the Entomological Society of America.

  17. CONSTRAINTS ON BLACK HOLE GROWTH, QUASAR LIFETIMES, AND EDDINGTON RATIO DISTRIBUTIONS FROM THE SDSS BROAD-LINE QUASAR BLACK HOLE MASS FUNCTION

    International Nuclear Information System (INIS)

    Kelly, Brandon C.; Hernquist, Lars; Siemiginowska, Aneta; Vestergaard, Marianne; Fan Xiaohui; Hopkins, Philip

    2010-01-01

    We present an estimate of the black hole mass function of broad-line quasars (BLQSOs) that self-consistently corrects for incompleteness and the statistical uncertainty in the mass estimates, based on a sample of 9886 quasars at 1 1 it is highly incomplete at M BH ∼ 9 M sun and L/L Edd ∼ BL > 150 ± 15 Myr for black holes at z = 1 with a mass of M BH = 10 9 M sun , and we constrain the maximum mass of a black hole in a BLQSO to be ∼3 x 10 10 M sun . Our estimated distribution of BLQSO Eddington ratios peaks at L/L Edd ∼ 0.05 and has a dispersion of ∼0.4 dex, implying that most BLQSOs are not radiating at or near the Eddington limit; however, the location of the peak is subject to considerable uncertainty. The steep increase in number density of BLQSOs toward lower Eddington ratios is expected if the BLQSO accretion rate monotonically decays with time. Furthermore, our estimated lifetime and Eddington ratio distributions imply that the majority of the most massive black holes spend a significant amount of time growing in an earlier obscured phase, a conclusion which is independent of the unknown obscured fraction. These results are consistent with models for self-regulated black hole growth, at least for massive systems at z > 1, where the BLQSO phase occurs at the end of a fueling event when black hole feedback unbinds the accreting gas, halting the accretion flow.

  18. Effect of Bifidobacterium upon Clostridium difficile growth and toxicity when co-cultured in different prebiotic substrates

    Directory of Open Access Journals (Sweden)

    Lorena Valdés Varela

    2016-05-01

    Full Text Available The intestinal overgrowth of Clostridium difficile, often after disturbance of the gut microbiota by antibiotic treatment, leads to C. difficile infection (CDI which manifestation ranges from mild diarrhoea to life-threatening conditions. The increasing CDI incidence, not only in compromised subjects but also in traditionally considered low-risk populations, together with the frequent relapses of the disease, has attracted the interest for prevention/therapeutic options. Among these, probiotics, prebiotics or synbiotics constitute a promising approach. In this study we determined the potential of selected Bifidobacterium strains for the inhibition of C. difficile growth and toxicity in different carbon sources. We conducted co-cultures of the toxigenic strain C. difficile LMG21717 with four Bifidobacterium strains (Bifidobacterium longum IPLA20022, Bifidobacterium breve IPLA20006, Bifidobacterium bifidum IPLA20015, and Bifidobacterium animalis subsp. lactis Bb12 in the presence of various prebiotic substrates (Inulin, Synergy and Actilight or glucose, and compared the results with those obtained for the corresponding mono-cultures. C. difficile and bifidobacteria levels were quantified by qPCR; the pH and the production of short chain fatty acids was also determined. Moreover, supernatants of the cultures were collected to evaluate their toxicity using a recently developed model. Results showed that co-culture with B. longum IPLA20022 and B. breve IPLA20006 in the presence of short-chain fructooligosaccharides, but not of Inulin, as carbon source significantly reduced the growth of the pathogen. With the sole exception of B. animalis Bb12, whose growth was enhanced, the presence of C. difficile did not show major effects upon the growth of the bifidobacteria. In accordance with the growth data, B. longum and B. breve were the strains showing higher reduction in the toxicity of the co-culture supernatants.

  19. RETRACTED: Nucleation and growth behavior of well-aligned ZnO nanorods on organic substrates in aqueous solutions

    Science.gov (United States)

    Lin, Chin-Ching; Chen, San-Yuan; Cheng, Syh-Yuh

    2005-09-01

    Available online : 21 July 2005 This article has been retracted: please see Elsevier Policy on Article Withdrawal (http://www.elsevier.com/locate/withdrawalpolicy). This article has been retracted at the request of the Editor-in-Chief. Two papers published in the Journal of Crystal Growth are being retracted due to a case of misrepresentation and reuse of data. A reader of the Journal has brought to our attention the reuse of data within two published papers: Growth behavior and microstructure evolution of ZnO nanorods grown on Si in aqueous solution, Sz-Chian Liou, Chi-Sheng Hsiao, San-Yuan Chen, Journal of Crystal Growth 274 (2005) 438-446. DOI: 10.1016/j.jcrysgro.2004.10.025 Nucleation and growth behavior of well-aligned ZnO nanorods on organic substrates in aqueous solutions, Chin-Ching Lin, San-Yuan Chen, and Syh-Yuh Cheng, Journal of Crystal Growth 283 (2005) 141-146. DOI: 10.1016/j.jcrysgro.2005.05.065 In these papers the same transmission electron micrograph was used to describe two different experimental situations and results bringing into question the content of these papers. The reuse of data without proper attribution is not acceptable within the scientific publishing community. In the present case, this is compounded by the attribution of the micrograph to a different experimental situation and drawing , as a result, new conclusions from data obtained from different samples. Such behavior undermines the integrity of the scientific publishing endeavor and is not acceptable. The authors are responsible for the content of their papers.

  20. Temperature effect on the growth of Au-free InAs and InAs/GaSb heterostructure nanowires on Si substrate by MOCVD

    Science.gov (United States)

    Kakkerla, Ramesh Kumar; Anandan, Deepak; Hsiao, Chih-Jen; Yu, Hung Wei; Singh, Sankalp Kumar; Chang, Edward Yi

    2018-05-01

    We demonstrate the growth of vertically aligned Au-free InAs and InAs/GaSb heterostructure nanowires on Si (1 1 1) substrate by Metal Organic Chemical Vapor Deposition (MOCVD). The effect of growth temperature on the morphology and growth rate of the InAs and InAs/GaSb heterostructure nanowires (NWs) is investigated. Control over diameter and length of the InAs NWs and the GaSb shell thickness was achieved by using growth temperature. As the GaSb growth temperature increase, GaSb radial growth rate increases due to the increase in alkyl decomposition at the substrate surface. Diffusivity of the adatoms increases as the GaSb growth temperature increase which results in tapered GaSb shell growth. Scanning Electron Microscope (SEM) and Transmission Electron Microscope (TEM) measurements revealed that the morphology and shell thickness can be tuned by the growth temperature. Electron microscopy also shows the formation of GaSb both in radial and axial directions outside the InAs NW core can be controlled by the growth temperature. This study demonstrates the control over InAs NWs growth and the GaSb shell thickness can be achieved through proper growth temperature control, such technique is essential for the growth of nanowire for future nano electronic devices, such as Tunnel FET.

  1. Effect of growth temperature on the morphology and phonon properties of InAs nanowires on Si substrates

    Directory of Open Access Journals (Sweden)

    Lei Wen

    2011-01-01

    Full Text Available Abstract Catalyst-free, vertical array of InAs nanowires (NWs are grown on Si (111 substrate using MOCVD technique. The as-grown InAs NWs show a zinc-blende crystal structure along a < 111 > direction. It is found that both the density and length of InAs NWs decrease with increasing growth temperatures, while the diameter increases with increasing growth temperature, suggesting that the catalyst-free growth of InAs NWs is governed by the nucleation kinetics. The longitudinal optical and transverse optical (TO mode of InAs NWs present a phonon frequency slightly lower than those of InAs bulk materials, which are speculated to be caused by the defects in the NWs. A surface optical mode is also observed for the InAs NWs, which shifts to lower wave-numbers when the diameter of NWs is decreased, in agreement with the theory prediction. The carrier concentration is extracted to be 2.25 × 1017 cm-3 from the Raman line shape analysis. A splitting of TO modes is also observed. PACS: 62.23.Hj; 81.07.Gf; 63.22.Gh; 61.46.Km

  2. An Efficient Explicit Finite-Difference Scheme for Simulating Coupled Biomass Growth on Nutritive Substrates

    Directory of Open Access Journals (Sweden)

    G. F. Sun

    2015-01-01

    Full Text Available A novel explicit finite-difference (FD method is presented to simulate the positive and bounded development process of a microbial colony subjected to a substrate of nutrients, which is governed by a nonlinear parabolic partial differential equations (PDE system. Our explicit FD scheme is uniquely designed in such a way that it transfers the nonlinear terms in the original PDE into discrete sets of linear ones in the algebraic equation system that can be solved very efficiently, while ensuring the stability and the boundedness of the solution. This is achieved through (1 a proper design of intertwined FD approximations for the diffusion function term in both time and spatial variations and (2 the control of the time-step through establishing theoretical stability criteria. A detailed theoretical stability analysis is conducted to reveal that our FD method is indeed stable. Our examples verified the fact that the numerical solution can be ensured nonnegative and bounded to simulate the actual physics. Numerical examples have also been presented to demonstrate the efficiency of the proposed scheme. The present scheme is applicable for solving similar systems of PDEs in the investigation of the dynamics of biological films.

  3. Anisotropic corner diffusion as origin for dendritic growth on hexagonal substrates

    DEFF Research Database (Denmark)

    Brune, H.; Röder, H.; Bromann, K.

    1996-01-01

    Ag aggregation on Ag(111), Pt(111), and 1 ML Ag pseudomorphically grown on Pt(111), has been studied with variable temperature STM. These systems all have in common that dendritic patterns with trigonal symmetry rather than randomly ramified aggregates, which would be expected for a simple hit an...... theory show that this relaxation is highly asymmetric with respect to the two different kinds of close-packed steps. It leads to dendritic growth as verified by kinetic Monte-Carlo simulations which agree well with experiment....

  4. Oil palm waste and synthetic zeolite: an alternative soil-less growth substrate for lettuce production as a waste management practice

    Energy Technology Data Exchange (ETDEWEB)

    Jayasinghe, G.Y.; Tokashiki, Y.; Kitou, M.; Kinjo, K. [Kagoshima University, Kagoshima (Japan). United Graduate School of Agricultural Science

    2008-12-15

    A study was conducted to assess the characteristics and the prospective utilization of oil palm waste (OP) and synthetic zeolite (SZ) developed by coal fly ash, as an alternative substrate to peat and commercial perlite for lettuce (Lactuca sativa L.) production. The SZ, OP, sphagnum peat (PE), perlite (PL) and two different SZ-OP mixtures (v/v) at the ratio of 1 : 3 and 1 : 10 were utilized as the substrates under this study. The substrates formulated by mixing SZ with OP at the ratio of 1 : 3 and 1 : 10 showed improved substrate physical and chemical properties such as air space, bulk density, particle density, water-holding capacity, pH and electrical conductivity (EC), which were in the ideal substrate range when compared with PL. Furthermore, the water-holding capacity of the substrate having a 1 : 10 mixing ratio of SZ with OP was higher than that of the PL by 28.23%, whereas the bulk density was lower than that of PL by 35%. A greenhouse experiment was carried out to assess the influence of the substrates on the growth and development of lettuce. The results of the study suggest that the SZ-OP-based substrates and OP can be successfully utilized as alternatives to the commercial perlite and to substitute the conventional peat substrate for lettuce cultivation. In addition, this can be proposed as an alternative waste management practice.

  5. Caenorhabditis elegans fibroblast growth factor receptor signaling can occur independently of the multi-substrate adaptor FRS2.

    Science.gov (United States)

    Lo, Te-Wen; Bennett, Daniel C; Goodman, S Jay; Stern, Michael J

    2010-06-01

    The components of receptor tyrosine kinase signaling complexes help to define the specificity of the effects of their activation. The Caenorhabditis elegans fibroblast growth factor receptor (FGFR), EGL-15, regulates a number of processes, including sex myoblast (SM) migration guidance and fluid homeostasis, both of which require a Grb2/Sos/Ras cassette of signaling components. Here we show that SEM-5/Grb2 can bind directly to EGL-15 to mediate SM chemoattraction. A yeast two-hybrid screen identified SEM-5 as able to interact with the carboxy-terminal domain (CTD) of EGL-15, a domain that is specifically required for SM chemoattraction. This interaction requires the SEM-5 SH2-binding motifs present in the CTD (Y(1009) and Y(1087)), and these sites are required for the CTD role of EGL-15 in SM chemoattraction. SEM-5, but not the SEM-5 binding sites located in the CTD, is required for the fluid homeostasis function of EGL-15, indicating that SEM-5 can link to EGL-15 through an alternative mechanism. The multi-substrate adaptor protein FRS2 serves to link vertebrate FGFRs to Grb2. In C. elegans, an FRS2-like gene, rog-1, functions upstream of a Ras/MAPK pathway for oocyte maturation but is not required for EGL-15 function. Thus, unlike the vertebrate FGFRs, which require the multi-substrate adaptor FRS2 to recruit Grb2, EGL-15 can recruit SEM-5/Grb2 directly.

  6. GROWTH AND LEVELS OF N, P AND K IN ROOTSTOCKS OF TAMARIND TREES USING ORGANIC SUBSTRATES AND DOSES OF PHOSPHORUS

    Directory of Open Access Journals (Sweden)

    EDUARDO CASTRO PEREIRA

    2016-01-01

    Full Text Available The aim of this study was to evaluate different organic substrates and phosphorus doses on the growth and leaf content of nitrogen, phosphorus and potassium in rootstocks of Tamarindus indica L. The experiment was performed in a greenhouse nursery located on the campus of the Universidade Federal Rural do Semi-Árido (UFERSA, from March to October 2013. The treatments consisted of three organic sources at a concentration of 40% (v/v (bovine manure, goat manure and a commercial organic compound and four doses of simple superphosphate (0, 0 kg m-3, 2.5 kg m-3, 5.0 kg m-3 and 7.5 kg m-3. The experiment was conducted in a randomized block design (RBD, with 12 treatments (substrates, four replications and 10 plants per plot, totaling 480 plants. The goat manure and the organic compound were the most suitable treatments for the production of rootstocks of the tamarind tree. The maximum dose of 7.5 g kg-1 of simple superphosphate caused the highest levels of phosphorus and potassium in the dry mass of shoots. The nutrients in the dry matter of shoots accumulated in the following order: N > K > P.

  7. Growth and characterization of polar and nonpolar ZnO film grown on sapphire substrates by using atomic layer deposition

    International Nuclear Information System (INIS)

    Kim, Ki-Wook; Son, Hyo-Soo; Choi, Nak-Jung; Kim, Jihoon; Lee, Sung-Nam

    2013-01-01

    We investigated the electrical and the optical properties of polar and nonpolar ZnO films grown on sapphire substrates with different crystallographic planes. High resolution X-ray results revealed that polar c-plane (0001), nonpolar m-plane (10-10) and a-plane (11-20) ZnO thin films were grown on c-plane, m- and r-sapphire substrates by atomic layer deposition, respectively. Compared with the c-plane ZnO film, nonpolar m-plane and a-plane ZnO films showed smaller surface roughness and anisotropic surface structures. Regardless of ZnO crystal planes, room temperature photoluminescence spectra represented two emissions which consisted of the near bandedge (∼ 380 nm) and the deep level emission (∼ 500 nm). The a-plane ZnO films represented better optical and electrical properties than c-plane ZnO, while m-plane ZnO films exhibited poorer optical and electrical properties than c-plane ZnO. - Highlights: • Growth and characterization of a-, c- and m-plane ZnO film by atomic layer deposition. • The a-plane ZnO represented better optical and electrical properties than c-plane ZnO. • The m-plane ZnO exhibited poorer optical and electrical properties than c-plane ZnO

  8. Effect of precursor concentration on the growth of zinc oxide nanorod arrays on pre-treated substrates

    International Nuclear Information System (INIS)

    Urgessa, Z.N.; Oluwafemi, O.S.; Botha, J.R.

    2012-01-01

    Well aligned zinc oxide nanorod arrays (ZNAs) synthesized by a simple chemical bath deposition method were fabricated on pre-treated Si substrates. By keeping the molar VI/II ratio constant, the effect of precursor concentration on the growth and optical quality of the ZNAs was investigated. The as-synthesized ZNAs were characterized by field emission scanning electron microscopy (FESEM), x-ray diffraction (XRD) and photoluminescence spectroscopy (PL). FESEM images show that both the diameter and aspect ratio of the ZNAs increase dramatically as the precursor concentration increases. The XRD analysis indicates that all the as-grown ZNAs are crystalline and are preferentially oriented along the c-axis. The high intensity ratio of the UV emission to visible emission in the room temperature PL spectra illustrate that high optical quality ZNAs were produced.

  9. Effect of precursor concentration on the growth of zinc oxide nanorod arrays on pre-treated substrates

    Energy Technology Data Exchange (ETDEWEB)

    Urgessa, Z.N. [Department of Physics, P.O. Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa); Oluwafemi, O.S., E-mail: oluwafemi.oluwatobi@gmail.com [Department of Chemistry and Chemical Technology, Walter Sisulu University, Mthatha Campus, Private Bag XI, 5117 (South Africa); Botha, J.R. [Department of Physics, P.O. Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa)

    2012-05-15

    Well aligned zinc oxide nanorod arrays (ZNAs) synthesized by a simple chemical bath deposition method were fabricated on pre-treated Si substrates. By keeping the molar VI/II ratio constant, the effect of precursor concentration on the growth and optical quality of the ZNAs was investigated. The as-synthesized ZNAs were characterized by field emission scanning electron microscopy (FESEM), x-ray diffraction (XRD) and photoluminescence spectroscopy (PL). FESEM images show that both the diameter and aspect ratio of the ZNAs increase dramatically as the precursor concentration increases. The XRD analysis indicates that all the as-grown ZNAs are crystalline and are preferentially oriented along the c-axis. The high intensity ratio of the UV emission to visible emission in the room temperature PL spectra illustrate that high optical quality ZNAs were produced.

  10. A Molecular Dynamics Study of the Epitaxial Growth of Metallic Nanoclusters Softly Deposited on Substrates with Very Different Lattice Parameter

    International Nuclear Information System (INIS)

    Jimenez-Saez, J C; Perez-MartIn, A M C; Jimenez-RodrIguez, J J

    2007-01-01

    The soft deposition of Cu and Au clusters on Au(001) and Cu(001) surfaces respectively is studied by constant-temperature molecular-dynamics simulations. The initial shape of the nanoclusters is icosahedral or truncated octahedral (Wulff type). Their number of atoms ranges between 12 and 1289 atoms. Bombardment energy is of the order of a few meV/atom. The atomic interactions are mimicked by a many-body potential based on the tightbinding model. The effect of the temperature as activation to get the complete epitaxy is analysed. We have found that Cu clusters manage to align their {002} planes with the substrate by increasing the temperature. However, there is not epitaxial growth in any case since the lattice becomes bcc or important stacking faults are generated. For Au clusters, the alignment of these planes is practically independent of the temperature

  11. The growth of III-V nitrides heterostructure on Si substrate by plasma-assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    Beh, K.P.; Yam, F.K.; Chin, C.W.; Tneh, S.S.; Hassan, Z.

    2010-01-01

    This paper reports the growth of InGaN/GaN/AlN epitaxial layer on Si(1 1 1) substrate by utilizing plasma-assisted molecular beam epitaxy (PA-MBE) system. The as-grown film was characterized using high-resolution X-ray diffraction (HR-XRD) and photoluminescence (PL). High work function metals, iridium and gold were deposited on the film as metal contacts and their electrical characteristics at pre- and post-annealing were studied. The structural quality of this film is comparative to the values reported in the literature, and the indium molar fraction is 0.57 by employing Vegard's law. The relatively low yellow band emission signifies the grown film is of high quality. For metal contact studies it was found that the post-annealed sample for 5 min shows good conductivity as compared to the other samples.

  12. The growth of Micrococcus varians by utilizing sugar cane blackstrap molasses as substrate

    Directory of Open Access Journals (Sweden)

    Miranda Luís A. S.

    1999-01-01

    Full Text Available Comparative studies on the growth of Micrococcus varians were carried out in BHI culture medium (control as well as in a culture medium with 2% diluted sugar cane blackstrap molasses, enriched with 0.1% yeast extract. The experiment was conducted with three samples of the experimental and control media in a 5 liter fermentor with working volume of 3.5 liters, continuous agitation (150 rpm, 35 ± 0.1°C temperature, 0.7 L air. l-1 medium. min -1, initial pH 7.0 ± 0.2, 24 hour fermentation period, and approximate inoculum of 6.0 log10 CFU/ml. Samples were collected at 2-hour intervals. Micrococcus varians grew in the two culture media studied, which confirms the experimental medium viability for the growth of this species. The final average concentration of biomass was higher in the control medium than in the experimental medium: 0.99 g.l-1 and 0.78 g.l-1, respectively. The final number of viable cells at the end of fermentation was 20.65 log10 CFU/ml for the control medium (BHI, while in the experimental medium the number of viable cells was 19.43 log10 CFU/ml. The consumption of total sugars was higher for the biomass in the control medium (79.78%, while only 50.53% was consumed for the experimental medium.

  13. ARBUSCULAR MYCORRHIZAL IN THE GROWTH OF LEGUMINOUS TREES ON COALMINE WASTE ENRICHED SUBSTRATE

    Directory of Open Access Journals (Sweden)

    Shantau Camargo Gomes Stoffel

    2016-06-01

    Full Text Available The objective of this work was to evaluate the effects of arbuscular mycorrhizal inoculation in the growth, colonization and absorption of P and trace elements of leguminous trees on coal mine wastes. Independent assays for Mimosa scabrella Benth. (common name bracatinga, Mimosa bimucronata (DC. Kuntze (maricá and Parapiptadenia rigida (Benth. Brenan (angico-vermelho were carried out in a greenhouse on an entirely casualized experimental delineation composed of six treatments. Five coal mine autochthonous arbuscular mycorrhizal fungal isolates were tested, including Acaulospora colombiana, Acaulospora morrowiae, Dentiscutata heterogama, Rhizophagus clarus and Rhizophagus irregulars, aside from a control treatment, with four replications each. Results show that arbuscular mycorrhizal colonization was greater than 60% for Mimosa species, and up to 26% for Parapiptadenia. Overall, the fungal inoculation promoted better plant growth, with increments of up to 1430%. Phosphorous absorption was favored, especially when inoculation was done with A. colombiana, R. irregularis and A. morrowiae. Even though there was a conclusive reduction in the levels of trace elements in the plant´s shoots, the inoculation with those species of fungi promoted significant increments in the accumulated levels of As, Cu, Zn and Cr for all plant species tested. Therefore, arbuscular mycorrhizal fungi play important roles in these poor, degraded and often contaminated environments.

  14. Effects of enhanced UVB on growth and yield of two Syrian crops; wheat (Triticum durum desf. var. Horani) and broad beans field conditions

    International Nuclear Information System (INIS)

    Al-Oudat, M.; Baydoun, S.A.; Mohammed, A.

    1998-01-01

    Wheat and broad beans were exposed, under field conditions, to a daily UVB of 20 % above the ambient UVB. The plant height, tiller number, number of flowers, spikletes, dry weight and leaf area in both species showed positive responses to UVB treatment. At harvest, the seeds weight of broad beans was virtually equal in exposed and unexposed plants. In wheat, seeds yield increased significantly by 15 %. In conclusion, broad beans can be considered as a tolerant cultivar to enhanced UVB, while wheat is more tolerant. (Author)

  15. Effects of enhanced UVB on growth and yield of two Syrian crops, wheat (Triticum durum desf. var. horani) and broad beans (Vicia Faba L.) under field conditions

    International Nuclear Information System (INIS)

    Al-Oudat, M.; Baydoun, S.A.

    1997-04-01

    Wheat and broad beans were exposed, under field conditions, to a daily UVB of 20 % above the ambient UVB. The plant height, tiller number, number of flowers, spikletes, dry weight and leaf area in both species showed positive responses to UVB treatment. At harvest, the seeds weight of broad beans was virtually equal in exposed and unexposed plants. In wheat, seeds yield increased significantly by 15 %. In conclusion, broad beans can be considered as a tolerant cultivar to enhanced UVB, while wheat is more tolerant. (Author). 17 Tabs. 36 Refs

  16. Nitrogen form affects pH and EC of whole pine tree substrate and growth of petunia

    Science.gov (United States)

    Wood-based substrates are potential alternatives or amendments to traditional peat-based and pine bark substrates. Undesirable changes in substrate pH may result from the application of supplemental fertilizer required by some crops grown in wood-based substrates. Experiments were conducted to evalu...

  17. Growth, Structural and Optical Characterization of ZnO Nanotubes on Disposable-Flexible Paper Substrates by Low-Temperature Chemical Method

    Directory of Open Access Journals (Sweden)

    M. Y. Soomro

    2012-01-01

    Full Text Available We report the synthesis of vertically aligned ZnO nanotubes (NTs on paper substrates by low-temperature hydrothermal method. The growth of ZnO NTs on the paper substrate is discussed; further, the structural and optical properties are investigated by scanning electron microscope (SEM, transmission electron microscopy (TEM, X-ray diffraction (XRD, energy-dispersive X-ray spectroscopy (EDS, and cathodoluminescence (CL, and it was found that the ZnO NTs on paper substrate fulfill the structural and optical properties of ZnO NTs grown on other conventional substrates. This will be more beneficial in future usage of ZnO NTs in different fields and applications. Particularly, this approach opens the ways in research and development for high volume manufacturing of low-cost, flexible optoelectronics devices on disposable paper substrates and can be used in the future miniaturization trends.

  18. Growth of light-emitting SiGe heterostructures on strained silicon-on-insulator substrates with a thin oxide layer

    Energy Technology Data Exchange (ETDEWEB)

    Baidakova, N. A., E-mail: banatale@ipmras.ru [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Bobrov, A. I. [University of Nizhny Novgorod (Russian Federation); Drozdov, M. N.; Novikov, A. V. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Pavlov, D. A. [University of Nizhny Novgorod (Russian Federation); Shaleev, M. V.; Yunin, P. A.; Yurasov, D. V.; Krasilnik, Z. F. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

    2015-08-15

    The possibility of using substrates based on “strained silicon on insulator” structures with a thin (25 nm) buried oxide layer for the growth of light-emitting SiGe structures is studied. It is shown that, in contrast to “strained silicon on insulator” substrates with a thick (hundreds of nanometers) oxide layer, the temperature stability of substrates with a thin oxide is much lower. Methods for the chemical and thermal cleaning of the surface of such substrates, which make it possible to both retain the elastic stresses in the thin Si layer on the oxide and provide cleaning of the surface from contaminating impurities, are perfecte. It is demonstrated that it is possible to use the method of molecular-beam epitaxy to grow light-emitting SiGe structures of high crystalline quality on such substrates.

  19. Attached biomass growth and substrate utilization rate in a moving bed biofilm reactor

    Directory of Open Access Journals (Sweden)

    J. J. Marques

    2008-12-01

    Full Text Available A moving bed bioreactor containing cubes of polyether foam immersed in a synthetic wastewater (an aqueous mixture of meat extract, yeast extract, dextrose, meat peptone, ammonium chloride, potassium chloride, sodium chloride, sodium bicarbonate, potassium mono-hydrogen-phosphate and magnesium sulphate was used to evaluate bacterial growth and biomass yield parameters based on Monod's equation. The wastewater was supplied in the bottom of the equipment flowing ascending in parallel with a diffused air current that provided the mixing of the reactor content. Suspended and attached biomass concentration was measured through gravimetric methods. Good agreement was found between experimental kinetic parameters values and those obtained by other researchers. The only significant difference was the high global biomass content about 2 times the values obtained in conventional processes, providing high performance with volumetric loading rates up to 5.5 kg COD/m³/d.

  20. Iron-Doped Carbon Aerogels: Novel Porous Substrates for Direct Growth of Carbon Nanotubes

    Science.gov (United States)

    Steiner, S. A.; Baumann, T. F.; Kong, J.; Satcher, J. H.; Dresselhaus, M. S.

    2007-02-20

    We present the synthesis and characterization of Fe-doped carbon aerogels (CAs) and demonstrate the ability to grow carbon nanotubes directly on monoliths of these materials to afford novel carbon aerogel-carbon nanotube composites. Preparation of the Fe-doped CAs begins with the sol-gel polymerization of the potassium salt of 2,4-dihydroxybenzoic acid with formaldehyde, affording K{sup +}-doped gels that can then be converted to Fe{sup 2+}- or Fe{sup 3+}-doped gels through an ion exchange process, dried with supercritical CO{sub 2} and subsequently carbonized under an inert atmosphere. Analysis of the Fe-doped CAs by TEM, XRD and XPS revealed that the doped iron species are reduced during carbonization to form metallic iron and iron carbide nanoparticles. The sizes and chemical composition of the reduced Fe species were related to pyrolysis temperature as well as the type of iron salt used in the ion exchange process. Raman spectroscopy and XRD analysis further reveal that, despite the presence of the Fe species, the CA framework is not significantly graphitized during pyrolysis. The Fe-doped CAs were subsequently placed in a thermal CVD reactor and exposed to a mixture of CH{sub 4} (1000 sccm), H{sub 2} (500 sccm), and C{sub 2}H{sub 4} (20 sccm) at temperatures ranging from 600 to 800 C for 10 minutes, resulting in direct growth of carbon nanotubes on the aerogel monoliths. Carbon nanotubes grown by this method appear to be multiwalled ({approx}25 nm in diameter and up to 4 mm long) and grow through a tip-growth mechanism that pushes catalytic iron particles out of the aerogel framework. The highest yield of CNTs were grown on Fe-doped CAs pyrolyzed at 800 C treated at CVD temperatures of 700 C.

  1. Iron-Doped Carbon Aerogels: Novel Porous Substrates for Direct Growth of Carbon Nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Steiner, S A; Baumann, T F; Kong, J; Satcher, J H; Dresselhaus, M S

    2007-02-15

    We present the synthesis and characterization of Fe-doped carbon aerogels (CAs) and demonstrate the ability to grow carbon nanotubes directly on monoliths of these materials to afford novel carbon aerogel-carbon nanotube composites. Preparation of the Fe-doped CAs begins with the sol-gel polymerization of the potassium salt of 2,4-dihydroxybenzoic acid with formaldehyde, affording K{sup +}-doped gels that can then be converted to Fe{sup 2+}- or Fe{sup 3+}-doped gels through an ion exchange process, dried with supercritical CO{sub 2} and subsequently carbonized under an inert atmosphere. Analysis of the Fe-doped CAs by TEM, XRD and XPS revealed that the doped iron species are reduced during carbonization to form metallic iron and iron carbide nanoparticles. The sizes and chemical composition of the reduced Fe species were related to pyrolysis temperature as well as the type of iron salt used in the ion exchange process. Raman spectroscopy and XRD analysis further reveal that, despite the presence of the Fe species, the CA framework is not significantly graphitized during pyrolysis. The Fe-doped CAs were subsequently placed in a thermal CVD reactor and exposed to a mixture of CH{sub 4} (1000 sccm), H{sub 2} (500 sccm), and C{sub 2}H{sub 4} (20 sccm) at temperatures ranging from 600 to 800 C for 10 minutes, resulting in direct growth of carbon nanotubes on the aerogel monoliths. Carbon nanotubes grown by this method appear to be multiwalled ({approx}25 nm in diameter and up to 4 mm long) and grow through a tip-growth mechanism that pushes catalytic iron particles out of the aerogel framework. The highest yield of CNTs were grown on Fe-doped CAs pyrolyzed at 800 C treated at CVD temperatures of 700 C.

  2. Magnetophotoluminescence study of the influence of substrate orientation and growth interruption on the electronic properties of InAs/GaAs quantum dots

    International Nuclear Information System (INIS)

    Godefroo, S.; Maes, J.; Hayne, M.; Moshchalkov, V.V.; Henini, M.; Pulizzi, F.; Patane, A.; Eaves, L.

    2004-01-01

    We have used photoluminescence in pulsed (≤50 T) and dc (≤12 T) magnetic fields to investigate the influence of substrate orientation and growth interruption (GI) on the electronic properties of InAs/GaAs quantum dots, grown by molecular beam epitaxy at 480 deg. C. Dot formation is very efficient on the (100) substrate: electronic confinement is already strong without GI and no significant change in confinement is observed with GI. On the contrary, for the (311)B substrate strong confinement of the charges only occurs after a GI is introduced. When longer GIs are applied the dots become higher

  3. In situ study of the growth and degradation processes in tetragonal lysozyme crystals on a silicon substrate by high-resolution X-ray diffractometry

    Science.gov (United States)

    Kovalchuk, M. V.; Prosekov, P. A.; Marchenkova, M. A.; Blagov, A. E.; D'yakova, Yu. A.; Tereshchenko, E. Yu.; Pisarevskii, Yu. V.; Kondratev, O. A.

    2014-09-01

    The results of an in situ study of the growth of tetragonal lysozyme crystals by high-resolution X-ray diffractometry are considered. The crystals are grown by the sitting-drop method on crystalline silicon substrates of different types: both on smooth substrates and substrates with artificial surface-relief structures using graphoepitaxy. The crystals are grown in a special hermetically closed crystallization cell, which enables one to obtain images with an optical microscope and perform in situ X-ray diffraction studies in the course of crystal growth. Measurements for lysozyme crystals were carried out in different stages of the crystallization process, including crystal nucleation and growth, developed crystals, the degradation of the crystal structure, and complete destruction.

  4. GROWTH AND NUTRITIONAL ANALYSIS OF TREE SPECIES IN CONTAMINATED SUBSTRATE BY LEACHABLE HERBICIDES

    Directory of Open Access Journals (Sweden)

    Rebecca de Araújo Fiore

    Full Text Available ABSTRACT Ecosystems contamination by residues of pesticides requires special attention to the herbicides subject to leaching. The objective was to select tree species to rhizodegradation contaminated by residues of 2,4-D and atrazine and to recompose riparian areas to agricultural fields, then reducing the risk of contamination of water courses. A total of 36 treatments consisted of the combinations of forest species were evaluated [Inga marginata (Inga, Schizolobium parahyba (guapuruvu, Handroanthus serratifolius (ipê amarelo, Jacaranda puberula (carobinha, Cedrela fissilis (cedro, Calophyllum brasiliensis (landin, Psidium mirsinoides (goiabinha, Tibouchina glandulosa (quaresmeira, Caesalpinia férrea (pau-ferro, Caesalpinia pluviosa (sibipiruna, Terminalia argêntea (capitão and Schinopsis brasiliensis (braúna] and three solutions simulating leachate compound (atrazine, 2,4-D and water - control, with four replicates each. The characteristics measured were plant height, stem diameter, number of leaves, leaf area and dry biomass, and foliar nutrition. Forest species survived the herbicide application, and most showed an increase in macronutrients even under an herbicide application, and the Inga had the highest tolerance regarding growth analysis. It is recommended to use species that are more tolerant to Atrazine and 2,4-D in field experiments to confirm previous results of this simulation.

  5. Alginate as a cell culture substrate for growth and differentiation of human retinal pigment epithelial cells.

    Science.gov (United States)

    Heidari, Razeih; Soheili, Zahra-Soheila; Samiei, Shahram; Ahmadieh, Hamid; Davari, Maliheh; Nazemroaya, Fatemeh; Bagheri, Abouzar; Deezagi, Abdolkhalegh

    2015-03-01

    The purpose of this study was to evaluate retinal pigment epithelium (RPE) cells' behavior in alginate beads that establish 3D environment for cellular growth and mimic extracellular matrix versus the conventional 2D monolayer culture. RPE cells were encapsulated in alginate beads by dripping alginate cell suspension into CaCl2 solution. Beads were suspended in three different media including Dulbecco's modified Eagle's medium (DMEM)/F12 alone, DMEM/F12 supplemented with 10 % fetal bovine serum (FBS), and DMEM/F12 supplemented with 30 % human amniotic fluid (HAF). RPE cells were cultivated on polystyrene under the same conditions as controls. Cell phenotype, cell proliferation, cell death, and MTT assay, immunocytochemistry, and real-time RT-PCR were performed to evaluate the effect of alginate on RPE cells characteristics and integrity. RPE cells can survive and proliferate in alginate matrixes. Immunocytochemistry analysis exhibited Nestin, RPE65, and cytokeratin expressions in a reasonable number of cultured cells in alginate beads. Real-time PCR data demonstrated high levels of Nestin, CHX10, RPE65, and tyrosinase gene expressions in RPE cells immobilized in alginate when compared to 2D monolayer culture systems. The results suggest that alginate can be used as a reliable scaffold for maintenance of RPE cells' integrity and in vitro propagation of human retinal progenitor cells for cell replacement therapies in retinal diseases.

  6. Direct in Situ Conversion of Metals into Metal-Organic Frameworks: A Strategy for the Rapid Growth of MOF Films on Metal Substrates.

    Science.gov (United States)

    Ji, Hoon; Hwang, Sunhyun; Kim, Keonmok; Kim, CheolGi; Jeong, Nak Cheon

    2016-11-30

    The fabrication of metal-organic framework (MOF) films on conducting substrates has demonstrated great potential in applications such as electronic conduction and sensing. For these applications, direct contact of the film to the conducting substrate without a self-assembled monolayer (SAM) is a desired step that must be achieved prior to the use of MOF films. In this report, we propose an in situ strategy for the rapid one-step conversion of Cu metal into HKUST-1 films on conducting Cu substrates. The Cu substrate acts both as a conducting substrate and a source of Cu 2+ ions during the synthesis of HKUST-1. This synthesis is possible because of the simultaneous reaction of an oxidizing agent and a deprotonating agent, in which the former agent dissolves the metal substrate to form Cu 2+ ions while the latter agent deprotonates the ligand. Using this strategy, the HKUST-1 film could not only be rapidly synthesized within 5 min but also be directly attached to the Cu substrate. Based on microscopic studies, we propose a plausible mechanism for the growth reaction. Furthermore, we show the versatility of this in situ conversion methodology, applying it to ZIF-8, which comprises Zn 2+ ions and imidazole-based ligands. Using an I 2 -filled HKUST-1 film, we further demonstrate that the direct contact of the MOF film to the conducting substrate makes the material more suitable for use as a sensor or electronic conductor.

  7. MBE growth of few-layer 2H-MoTe2 on 3D substrates

    Science.gov (United States)

    Vishwanath, Suresh; Sundar, Aditya; Liu, Xinyu; Azcatl, Angelica; Lochocki, Edward; Woll, Arthur R.; Rouvimov, Sergei; Hwang, Wan Sik; Lu, Ning; Peng, Xin; Lien, Huai-Hsun; Weisenberger, John; McDonnell, Stephen; Kim, Moon J.; Dobrowolska, Margaret; Furdyna, Jacek K.; Shen, Kyle; Wallace, Robert M.; Jena, Debdeep; Xing, Huili Grace

    2018-01-01

    MoTe2 is the least explored material in the Molybdenum-chalcogen family. Molecular beam epitaxy (MBE) provides a unique opportunity to tackle the small electronegativity difference between Mo and Te while growing layer by layer away from thermodynamic equilibrium. We find that for a few-layer MoTe2 grown at a moderate rate of ∼6 min per monolayer, a narrow window in temperature (above Te cell temperature) and Te:Mo ratio exists, where we can obtain pure phase 2H-MoTe2. This is confirmed using reflection high-energy electron diffraction (RHEED), Raman spectroscopy and X-ray photoemission spectroscopy (XPS). For growth on CaF2, Grazing incidence X-ray diffraction (GI-XRD) reveals a grain size of ∼90 Å and presence of twinned grains. In this work, we hypothesis the presence of excess Te incorporation in MBE grown few layer 2H-MoTe2. For film on CaF2, it is based on >2 Te:Mo stoichiometry using XPS as well as 'a' and 'c' lattice spacing greater than bulk 2H-MoTe2. On GaAs, its based on observations of Te crystallite formation on film surface, 2 × 2 superstructure observed in RHEED and low energy electron diffraction, larger than bulk c-lattice spacing as well as the lack of electrical conductivity modulation by field effect. Finally, thermal stability and air sensitivity of MBE 2H-MoTe2 is investigated by temperature dependent XRD and XPS, respectively.

  8. Sunflower seed for human consumption as a substrate for the growth of mycopopulations

    Directory of Open Access Journals (Sweden)

    Škrinjar Marija M.

    2012-01-01

    Full Text Available These mycological investigations are implicating samples of protein sunflower seed from regular cultivation in the Vojvodina Province. Samples are examined in different stages of production: reception in the silo, separation of massive fraction on peeler and then peeling, kernel after peeling, hull, final product, i.e. kernels separated from visible impurities on conveyor bel, that are later manually divided in two fractions - a seemingly whole, undamaged kernels, without change of colour, and b seemingly damaged kernels, broken, with change of colour. For the determination of viable count of moulds and their isolation, two different media are used in parallel: Sabouraud maltose agar (SMA and malt/yeast extract with 50% of glucose (MY50G, favourable for growth of xerophilic moulds. All samples tested were contaminated with fungi. Total viable mould count per seed varied from 1.6 (SMA respecting 1.3 (MY50G on reception, to 5.6 (SMA and 7.5 (MY50G cfu/seed in visually damaged sunflower kernels (final product. From seeds, kernels and hull, numerous moulds were isolated, belonging to 8 genera and 13 species (Alternaria alternata, Arthrinium phaeospermum, Aspergillus candidus, A. flavus, A. niger, A. ochraceus, A. versicolor, A. wentii, Cladosporium cladosporioides, Eurotium herbariorum, Penicillium aurantiogriseum, Rhizopus stolonifer and Trichoderma harzianum. Alternaria alternata, Aspergillus flavus, A.ochraceus, A. versicolor and Eurotium herbariorum were isolated on both media. Aspergillus candidus, A. versicolor, C. Cladosporioides, P. aurantiogriseum and T. harzianum were isolated only on SMA, while A. niger, A. wentii and R. stolonifer were exclusively isolated on MY50G. Most ubiquitous species is A. alternata, which is isolated from all tested samples, while A. candidus, C. cladosporioides and T. harzianum were isolated from sunflower seed on reception in silo, using SMA medium.

  9. Secretion of human epidermal growth factor (EGF) in autotrophic culture by a recombinant hydrogen-utilizing bacterium, Pseudomonas pseudoflava, carrying broad-host-range EGF secretion vector pKSEGF2.

    OpenAIRE

    Hayase, N; Ishiyama, A; Niwano, M

    1994-01-01

    We constructed the broad-host-range human epidermal growth factor (EGF) secretion plasmid pKSEGF2 by inserting the Escherichia coli tac promoter, the signal sequence of Pseudomonas stutzeri amylase, and the synthesized EGF gene into the broad-host-range vector pKT230. E. coli JM109 carrying pKSEGF2 secreted EGF into the periplasm and the culture medium under the control of the tac promoter. Pseudomonas aeruginosa PAO1161 carrying pKSEGF2 and Pseudomonas putida AC10 carrying pKSEGF2 secreted E...

  10. Growth of simplified buffer template on flexible metallic substrates for YBa2Cu3O7-δ coated conductors

    International Nuclear Information System (INIS)

    Xue, Yan; Zhang, Ya-Hui; Zhang, Fei; Zhao, Rui-Peng; Wang, Hui; Xiong, Jie; Tao, Bo-Wan

    2016-01-01

    A much simplified buffer structure, including a three-layer stack of LaMnO 3 /MgO/composite Y 2 O 3 –Al 2 O 3 , was proposed for high performance YBa 2 Cu 3 O 7-δ (YBCO) coated conductors. In this structure, biaxially textured MgO films were prepared on solution deposition planarized amorphous substrate through ion-beam-assisted deposition (IBAD) technology. By the use of in situ reflection high-energy electron diffraction monitor, X-ray diffraction and atomic force microscope, the influence of deposition parameters, such as film deposition rate, ion penetrate energy and ion beam flux, on crystalline orientation, texture, lattice parameter and surface morphology was systematically investigated. Moreover, stopping and range of ion in mater simulation was performed to study the effects of ion bombardment on MgO films. By optimizing IBAD process parameters, the best biaxial texture showed ω-scan of (002) MgO and Φ-scan of (220) MgO yield full width at half maximum values of 2.4° and 3.7°, indicating excellent biaxial texture. Subsequently, LaMnO 3 films were directly deposited on the IBAD-MgO template to improve the lattice mismatch between MgO and YBCO. Finally, YBCO films grown on this simplified buffer template exhibited a critical current density of 2.4 MA/cm 2 at 77 K and self-field, demonstrating the feasibility of this buffer structure. - Highlights: • Simplified buffer structure for YBCO coated conductors. • Growth of biaxially textured MgO films on flexible amorphous substrates. • Studying the influence of film deposition rate, ion energy and ion beam flux on the development of biaxial texture. • Demonstrating highly oriented YBCO films with a critical current density of 2.4 MA/cm 2 at self-field and 77 K.

  11. Atomic control of substrate termination and heteroepitaxial growth of SrTiO sub 3 /LaAlO sub 3 films

    CERN Document Server

    Kim, D W; Choi, C; Lim, K D; Noh, T W; Lee, D R; Park, J H; Lee, K B

    2000-01-01

    The roles of substrate termination in the growth behaviors of SrTiO sub 3 (STO) films were investigated. With heat treatment and an atomic layer deposition technique, LaAlO sub 3 (LAO) substrates with two kinds of terminations, i.e., LaO- and AlO sub 2 -terminated ones, could be prepared. On top of them STO films were grown by using laser molecular beam epitaxy. In the case of the STO/LaO-LAO film, a transition from layer-by-layer growth to island growth was observed after growth of about 10 monolayers (ML). On the other hand, the STO/AlO sub 2 -LAO film could be grown in a layer-by-layer mode with a flat surface up to 40 ML. We suggest that defects induced by charge compensation influence the strain states and the physical properties of oxide heterostructures significantly.

  12. Study on ECR dry etching and selective MBE growth of AlGaN/GaN for fabrication of quantum nanostructures on GaN (0001) substrates

    International Nuclear Information System (INIS)

    Oikawa, Takeshi; Ishikawa, Fumitaro; Sato, Taketomo; Hashizume, Tamotsu; Hasegawa, Hideki

    2005-01-01

    This paper attempts to form AlGaN/GaN quantum wire (QWR) network structures on patterned GaN (0001) substrates by selective molecular beam epitaxy (MBE) growth. Substrate patterns were prepared along - and -directions by electron cyclotron resonance assisted reactive-ion beam etching (ECR-RIBE) process. Selective growth was possible for both directions in the case of GaN growth, but only in the -direction in the case of AlGaN growth. A hexagonal QWR network was successfully grown on a hexagonal mesa pattern by combining the -direction and two other equivalent directions. AFM observation confirmed excellent surface morphology of the grown network. A clear cathodoluminescence (CL) peak coming from the embedded AlGaN/GaN QWR structure was clearly identified

  13. Growth, microstructure, and field-emission properties of synthesized diamond film on adamantane-coated silicon substrate by microwave plasma chemical vapor deposition

    International Nuclear Information System (INIS)

    Tiwari, Rajanish N.; Chang Li

    2010-01-01

    Diamond nucleation on unscratched Si surface is great importance for its growth, and detailed understanding of this process is therefore desired for many applications. The pretreatment of the substrate surface may influence the initial growth period. In this study, diamond films have been synthesized on adamantane-coated crystalline silicon {100} substrate by microwave plasma chemical vapor deposition from a gaseous mixture of methane and hydrogen gases without the application of a bias voltage to the substrates. Prior to adamantane coating, the Si substrates were not pretreated such as abraded/scratched. The substrate temperature was ∼530 deg. C during diamond deposition. The deposited films are characterized by scanning electron microscopy, Raman spectrometry, x-ray diffraction, and x-ray photoelectron spectroscopy. These measurements provide definitive evidence for high-crystalline quality diamond film, which is synthesized on a SiC rather than clean Si substrate. Characterization through atomic force microscope allows establishing fine quality criteria of the film according to the grain size of nanodiamond along with SiC. The diamond films exhibit a low-threshold (55 V/μm) and high current-density (1.6 mA/cm 2 ) field-emission (FE) display. The possible mechanism of formation of diamond films and their FE properties have been demonstrated.

  14. Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth

    NARCIS (Netherlands)

    Profijt, H. B.; M. C. M. van de Sanden,; Kessele, W. M. M.

    2013-01-01

    Two substrate-biasing techniques, i.e., substrate-tuned biasing and RF biasing, have been implemented in a remote plasma configuration, enabling control of the ion energy during plasma-assisted atomic layer deposition (ALD). With both techniques, substrate bias voltages up to -200 V have been

  15. Direct growth of CdSe nanorods on ITO substrates by co-anchoring of ZnO nanoparticles and ethylenediamine

    International Nuclear Information System (INIS)

    Pan Shangke; Xu Tingting; Venkatesan, Swaminathan; Qiao Qiquan

    2012-01-01

    To grow CdSe nanorods directly onto indium tin oxide (ITO) substrates, a ZnO buffer layer composed of nanoparticles with diameter of ∼30–40 nm was prepared by spin coating ZnO sol–gel solution onto the ITO substrates. CdSe nanorods were then successfully in situ grown onto ITO substrates with diameter of ∼30–40 nm and length of ∼120–160 nm using solvothermal method in which CdSe·0.5en (en = ethylenediamine) acted as solution precursor. The in situ synthesized CdSe nanorods were conformed and characterized by atomic force microscope and electron microscopy. The mechanism of such in situ CdSe growth was understood as ZnO nanoparticles anchored en onto ITO substrates, while en linked CdSe with ZnO.

  16. Epitaxial growth of YBa sub 2 Cu sub 3 O sub 7 minus. delta. thin films on LiNbO sub 3 substrates

    Energy Technology Data Exchange (ETDEWEB)

    Lee, S.G.; Koren, G.; Gupta, A.; Segmuller, A.; Chi, C.C. (IBM Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598 (US))

    1989-09-18

    {ital In} {ital situ} epitaxial growth of YBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} thin films on {ital Y}-cut LiNbO{sub 3} substrates using a standard laser ablation technique is reported. Resistance of the films shows a normal metallic behavior and a very sharp ({lt}1 K) superconducting transition with {ital T}{sub {ital c}}({ital R}=0) of 92 K. High critical current density of {ital J}{sub {ital c}}(77 K)=2{times}10{sup 5} A/cm{sup 2} is observed, which is in accordance with epitaxial growth. Film orientation observed from x-ray diffraction spectra indicates that the {ital c} axis is normal to the substrate plane and the {ital a} axis is at 45{degree} to the (11.0) direction of the hexagonal lattice of the substrate with two domains in mirror image to the (110) plane.

  17. Maintenance-energy-dependent dynamics of growth and poly(3-hydroxybutyrate [P(3HB] production by Azohydromonas lata MTCC 2311 using simple and renewable carbon substrates

    Directory of Open Access Journals (Sweden)

    M. Zafar

    2014-06-01

    Full Text Available The dynamics of microbial growth and poly(3-hydroxybutyrate [P(3HB] production in growth/ non-growth phases of Azhohydromonas lata MTCC 2311 were studied using a maintenance-energy-dependent mathematical model. The values of calculated model kinetic parameters were: m s1 = 0.0005 h-1, k = 0.0965, µmax = 0.25 h-1 for glucose; m s1 = 0.003 h-1, k = 0.1229, µmax = 0.27 h-1 for fructose; and m s1 = 0.0076 h-1, k = 0.0694, µmax = 0.25 h-1 for sucrose. The experimental data of biomass growth, substrate consumption, and P(3HB production on different carbon substrates were mathematically fitted using non-linear least square optimization technique and similar trends, but different levels were observed at varying initial carbon substrate concentration. Further, on the basis of substrate assimilation potential, cane molasses was used as an inexpensive and renewable carbon source for P(3HB production. Besides, the physico-chemical, thermal, and material properties of synthesized P(3HB were determined which reveal its suitability in various applications.

  18. Nanosheet controlled epitaxial growth of PbZr0.52Ti0.48O3 thin films on glass substrates

    NARCIS (Netherlands)

    Bayraktar, Muharrem; Chopra, A.; Bijkerk, Frederik; Rijnders, Augustinus J.H.M.

    2014-01-01

    Integration of PbZr0.52Ti0.48O3 (PZT) films on glass substrates is of high importance for device applications. However, to make use of the superior ferro- and piezoelectric properties of PZT, well-oriented crystalline or epitaxial growth with control of the crystal orientation is a prerequisite. In

  19. Growth-dependent modulation of casein kinase II and its substrate nucleolin in primary human cell cultures and HeLa cells

    DEFF Research Database (Denmark)

    Schneider, H R; Issinger, O G

    1989-01-01

    We have previously provided evidence that casein kinase II (CKII) and its substrate nucleolin increase concomitantly during certain development stages during embryogenesis (Schneider et al., Eur. J. Biochem. 161, 733-738). We now show that during normal growth of primary cell cultures and He...

  20. The fibroblast growth factor receptor (FGFR) agonist FGF1 and the neural cell adhesion molecule-derived peptide FGL activate FGFR substrate 2alpha differently

    DEFF Research Database (Denmark)

    Chen, Yongshuo; Li, Shizhong; Berezin, Vladimir

    2010-01-01

    Activation of fibroblast growth factor (FGF) receptors (FGFRs) both by FGFs and by the neural cell adhesion molecule (NCAM) is crucial in the development and function of the nervous system. We found that FGFR substrate 2alpha (FRS2alpha), Src homologous and collagen A (ShcA), and phospholipase-Cg...

  1. Epitaxial growth and properties of AlGaN-based UV-LEDs on Si(111) substrates

    Energy Technology Data Exchange (ETDEWEB)

    Saengkaew, Phannee

    2010-07-08

    An increasing demand for bright and efficient ultraviolet light emitting diodes (UVLEDs) is generated by numerous applications such as biochemical sensors, purification and sterilization, and solid-state white lighting. Al{sub x}Ga{sub 1-x}N is a promising material to develop UVLEDs due to the direct wide-bandgap material for emission wavelengths in the UV range and the capability of n- and p-type doping. To develop UV-LEDs on Si substrates is very interesting for low-cost UV-light sources since the Si substrate is available at low cost, in large-diameter size enabling the integration with well-known Si electronics. This work presents the first crack-free AlGaN-based UV-LEDs on Si(111) substrates by MOVPE growth. This AlGaN-based UV-LED on Si(111) substrate consists of Al{sub 0.1}Ga{sub 0.9}N:Si layers on LT-AlN/HT-AlN SL buffer layers and an active layer of GaN/Al{sub 0.1}Ga{sub 0.9}N MQWs followed by Mg-doped (GaN/Al{sub 0.1}Ga{sub 0.9}N) superlattices and GaN:Mg cap layers. It yields a {proportional_to}350 nm UV electroluminescence at room temperature and a turn-on voltage in a range of 2.6-3.1 V by current-voltage (I-V) measurements. The novel LT-AlN/HT-AlN superlattice buffer layers efficiently improve the crystalline quality of Al{sub x}Ga{sub 1-x}N layers and compensate a thermal tensile strain in Al{sub x}Ga{sub 1-x}N layers after cooling as observed by in-situ curvature measurements. The dislocation density could be reduced from 8.4 x 10{sup 10} cm{sup -2} in the AlN-based SLs to 1.8 x 10{sup 10} cm{sup -2} in the Al{sub 0.1}Ga{sub 0.9}N layers as determined by cross-sectional transmission electron microscopy (TEM) measurements. Crack-free Al{sub x}Ga{sub 1-x}N layers grown on these LT-AlN/HT-AlN superlattices with 0.05{<=}x{<=} 0.65 are achieved on Si substrates with good crystalline, optical, and electrical properties. The best crystalline quality of Al{sub 0.1}Ga{sub 0.9}N is obtained with {omega}-FWHMs of the (0002) and (10-10) reflections of

  2. The impact of SiC substrate treatment on the heteroepitaxial growth of GaN by plasma assisted MBE

    Energy Technology Data Exchange (ETDEWEB)

    Brown, A.S.; Kim, T.H.; Choi, S.; Morse, M.; Wu, P. [Department of Electrical and Computer Engineering, Duke University, Durham, NC 27709 (United States); Losurdo, M.; Giangregorio, M.M.; Capezzuto, P.; Bruno, G. [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR, and INSTM via Orabona 4 -70126, Bari (Italy)

    2005-11-01

    We report on the impact of the preparation of the Si-face 4H-SiC(0001){sub Si} substrate using a Ga flash-off process on the epitaxial growth of GaN by plasma-assisted molecular beam epitaxy. The nucleation, as well as the resultant structural and morphological properties of GaN grown directly on 4H-SiC(0001){sub Si} are strongly influenced by the chemical and morphological modifications of the SiC surface induced by the Ga flash-off process. Herein we describe the impact of the specific concentration of Ga incident on the surface (quantified in terms of monolayer (ML) coverage): of 0.5 ML, 1ML and 2ML. The residual oxygen at the SiC surface, unintentional SiC nitridation and the formation of cubic GaN grains during the initial nucleation stage, are all reduced when a 2 ML Ga flash is used. All of the above factors result in structural improvement of the GaN epitaxial layers. The correlation between the SiC surface modification, the initial nucleation stage, and the GaN epitaxial layer structural quality has been articulated using x-ray photoelectron spectroscopy, X-ray diffraction, atomic force microscopy and spectroscopic ellipsometry data. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  3. Selective growth of Ge1- x Sn x epitaxial layer on patterned SiO2/Si substrate by metal-organic chemical vapor deposition

    Science.gov (United States)

    Takeuchi, Wakana; Washizu, Tomoya; Ike, Shinichi; Nakatsuka, Osamu; Zaima, Shigeaki

    2018-01-01

    We have investigated the selective growth of a Ge1- x Sn x epitaxial layer on a line/space-patterned SiO2/Si substrate by metal-organic chemical vapor deposition. We examined the behavior of a Sn precursor of tributyl(vinyl)tin (TBVSn) during the growth on Si and SiO2 substrates and investigated the effect of the Sn precursor on the selective growth. The selective growth of the Ge1- x Sn x epitaxial layer was performed under various total pressures and growth temperatures of 300 and 350 °C. The selective growth of the Ge1- x Sn x epitaxial layer on the patterned Si region is achieved at a low total pressure without Ge1- x Sn x growth on the SiO2 region. In addition, we found that the Sn content in the Ge1- x Sn x epitaxial layer increases with width of the SiO2 region for a fixed Si width even with low total pressure. To control the Sn content in the selective growth of the Ge1- x Sn x epitaxial layer, it is important to suppress the decomposition and migration of Sn and Ge precursors.

  4. A model framework to describe growth-linked biodegradation of trace-level pollutants in the presence of coincidental carbon substrates and microbes.

    Science.gov (United States)

    Liu, Li; Helbling, Damian E; Kohler, Hans-Peter E; Smets, Barth F

    2014-11-18

    Pollutants such as pesticides and their degradation products occur ubiquitously in natural aquatic environments at trace concentrations (μg L(-1) and lower). Microbial biodegradation processes have long been known to contribute to the attenuation of pesticides in contaminated environments. However, challenges remain in developing engineered remediation strategies for pesticide-contaminated environments because the fundamental processes that regulate growth-linked biodegradation of pesticides in natural environments remain poorly understood. In this research, we developed a model framework to describe growth-linked biodegradation of pesticides at trace concentrations. We used experimental data reported in the literature or novel simulations to explore three fundamental kinetic processes in isolation. We then combine these kinetic processes into a unified model framework. The three kinetic processes described were: the growth-linked biodegradation of micropollutant at environmentally relevant concentrations; the effect of coincidental assimilable organic carbon substrates; and the effect of coincidental microbes that compete for assimilable organic carbon substrates. We used Monod kinetic models to describe substrate utilization and microbial growth rates for specific pesticide and degrader pairs. We then extended the model to include terms for utilization of assimilable organic carbon substrates by the specific degrader and coincidental microbes, growth on assimilable organic carbon substrates by the specific degrader and coincidental microbes, and endogenous metabolism. The proposed model framework enables interpretation and description of a range of experimental observations on micropollutant biodegradation. The model provides a useful tool to identify environmental conditions with respect to the occurrence of assimilable organic carbon and coincidental microbes that may result in enhanced or reduced micropollutant biodegradation.

  5. Formation of gallium nitride templates and freestanding substrates by hydride vapor phase epitaxy for homoepitaxial growth of III-nitride devices

    Science.gov (United States)

    Williams, Adrian Daniel

    Gallium nitride (GaN) is a direct wide band gap semiconductor currently under heavy development worldwide due to interest in its applications in ultra-violet optoelectronics, power electronics, devices operating in harsh environments (high temperature or corrorsive), etc. While a number of devices have been demonstrated with this material and its related alloys, the unavailability of GaN substrates is seen as one of the current major bottlenecks to both material quality and device performance. This dissertation is concerned with the synthesis of high quality GaN substrates by the hydride vapor phase epitaxy method (HVPE). In this work, the flow of growth precursors in a home-built HVPE reactor was modeled by the Navier-Stokes equation and solved by finite element analysis to promote uniformity of GaN on 2'' sapphire substrates. Kinetics of growth was studied and various regimes of growth were identified to establish a methodology for HVPE GaN growth, independent of reactor geometry. GaN templates as well as bulk substrates were fabricated in this work. Realization of freestanding GaN substrates was achieved through discovery of a natural stress-induced method of separating bulk GaN from sapphire via mechanical failure of a low-temperature GaN buffer layer. Such a process eliminates the need for pre- or post-processing of sapphire substrates, as is currently the standard. Stress in GaN-on-sapphire is discussed, with the dominant contributor identified as thermal stress due to thermal expansion coefficient mismatch between the two materials. This thermal stress is analyzed using Stoney's equation and conditions for crack-free growth of thick GaN substrates were identified. An etch-back process for planarizing GaN templates was also developed and successfully applied to rough GaN templates. The planarization of GaN has been mainly addressed by chemo-mechanical polishing (CMP) methods in the literature, with notable shortcomings including the inability to effectively

  6. Effects of growth duration on the structural and optical properties of ZnO nanorods grown on seed-layer ZnO/polyethylene terephthalate substrates

    Energy Technology Data Exchange (ETDEWEB)

    Jeong, Y.I.; Shin, C.M.; Heo, J.H. [Department of Nano Systems Engineering, Center for Nano Manufacturing Inje University, Gimhae, Gyeongnam 621-749 (Korea, Republic of); Ryu, H., E-mail: hhryu@inje.ac.kr [Department of Nano Systems Engineering, Center for Nano Manufacturing Inje University, Gimhae, Gyeongnam 621-749 (Korea, Republic of); Lee, W.J. [Department of Nano Engineering, Dong-Eui University, Busan 614-714 (Korea, Republic of); Chang, J.H. [Major of Nano Semiconductor, Korea Maritime University, Busan 606-791 (Korea, Republic of); Son, C.S. [Department of Electronic Materials Engineering, Silla University, Busan 617-736 (Korea, Republic of); Yun, J. [Department of Nano Science and Engineering, Institute of Advanced Materials Kyungnam University, Changwon, Gyeongnam 631-701 (Korea, Republic of)

    2011-10-01

    Well-aligned single crystalline zinc oxide (ZnO) nanorods were successfully grown, by hydrothermal synthesis at a low temperature, on flexible polyethylene terephthalate (PET) substrates with a seed layer. Photoluminescence (PL), field-emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM) measurements were used to analyze the optical and structural properties of ZnO nanorods grown for various durations from 0.5 h to 10 h. Regular and well-aligned ZnO nanorods with diameters ranging from 62 nm to 127 nm and lengths from 0.3 {mu}m to 1.65 {mu}m were formed after almost 5 h of growth. The growth rate of ZnO grown on PET substrates is lower than that grown on Si (1 0 0) substrates. Enlarged TEM images show that the tips of the ZnO nanorods grown for 6 h have a round shape, whereas the tips grown for 10 h are sharpened. The crystal properties of ZnO nanorods can be tuned by using the growth duration as a growth condition. The XRD and PL results indicate that the structural and optical properties of the ZnO nanorods are most improved after 5 h and 6 h of growth, respectively.

  7. Growth of InGaAs/GaAsP multiple quantum well solar cells on mis-orientated GaAs substrates

    Energy Technology Data Exchange (ETDEWEB)

    Sodabanlu, Hassanet, E-mail: sodabanlu@hotaka.t.u-tokyo.ac.jp; Wang, Yunpeng; Watanabe, Kentaroh [Research Center for Advanced Science and Technology, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8904 (Japan); Sugiyama, Masakazu [Department of Electrical Engineering and Information System, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Institute of Engineering Innovation, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Nakano, Yoshiaki [Research Center for Advanced Science and Technology, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8904 (Japan); Department of Electrical Engineering and Information System, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan)

    2014-06-21

    The effects of growth temperature on the properties of InGaAs/GaAsP multiple quantum well (MQW) solar cells on various mis-orientated GaAs substrates were studied using metalorganic vapor phase epitaxy. Thickness modulation effect caused by mismatch strain of InGaAs/GaAsP could be suppressed by low growth temperature. Consequently, abrupt MQWs with strong light absorption could be deposited on mis-oriented substrates. However, degradation in crystal quality and impurity incorporation are the main drawbacks with low temperature growth because they tend to strongly degraded carrier transport and collection efficiency. MQW solar cells grown at optimized temperature showed the better conversion efficiency. The further investigation should focus on improvement of crystal quality and background impurities.

  8. Aligned, isotropic and patterned carbon nanotube substrates that control the growth and alignment of Chinese hamster ovary cells

    Energy Technology Data Exchange (ETDEWEB)

    Abdullah, Che Azurahanim Che; Asanithi, Piyapong; Brunner, Eric W; Jurewicz, Izabela; Bo, Chiara; Sear, Richard P; Dalton, Alan B [Department of Physics and Surrey Materials Institute, University of Surrey, Guildford, Surrey GU2 7XH (United Kingdom); Azad, Chihye Lewis; Ovalle-Robles, Raquel; Fang Shaoli; Lima, Marcio D; Lepro, Xavier; Collins, Steve; Baughman, Ray H, E-mail: r.sear@surrey.ac.uk [Alan G MacDiarmid NanoTech Institute, The University of Texas at Dallas, Richardson, TX 75080-3021 (United States)

    2011-05-20

    Here we culture Chinese hamster ovary cells on isotropic, aligned and patterned substrates based on multiwall carbon nanotubes. The nanotubes provide the substrate with nanoscale topography. The cells adhere to and grow on all substrates, and on the aligned substrate, the cells align strongly with the axis of the bundles of the multiwall nanotubes. This control over cell alignment is required for tissue engineering; almost all tissues consist of oriented cells. The aligned substrates are made using straightforward physical chemistry techniques from forests of multiwall nanotubes; no lithography is required to make inexpensive large-scale substrates with highly aligned nanoscale grooves. Interestingly, although the cells strongly align with the nanoscale grooves, only a few also elongate along this axis: alignment of the cells does not require a pronounced change in morphology of the cell. We also pattern the nanotube bundles over length scales comparable to the cell size and show that the cells follow this pattern.

  9. Growth and characterization of textured well-faceted ZnO on planar Si(100, planar Si(111, and textured Si(100 substrates for solar cell applications

    Directory of Open Access Journals (Sweden)

    Chin-Yi Tsai

    2017-09-01

    Full Text Available In this work, textured, well-faceted ZnO materials grown on planar Si(100, planar Si(111, and textured Si(100 substrates by low-pressure chemical vapor deposition (LPCVD were analyzed by X-ray diffraction (XRD, scanning electron microscopy (SEM, atomic force microscopy (AFM, and cathode luminescence (CL measurements. The results show that ZnO grown on planar Si(100, planar Si(111, and textured Si(100 substrates favor the growth of ZnO(110 ridge-like, ZnO(002 pyramid-like, and ZnO(101 pyramidal-tip structures, respectively. This could be attributed to the constraints of the lattice mismatch between the ZnO and Si unit cells. The average grain size of ZnO on the planar Si(100 substrate is slightly larger than that on the planar Si(111 substrate, while both of them are much larger than that on the textured Si(100 substrate. The average grain sizes (about 10–50 nm of the ZnO grown on the different silicon substrates decreases with the increase of their strains. These results are shown to strongly correlate with the results from the SEM, AFM, and CL as well. The reflectance spectra of these three samples show that the antireflection function provided by theses samples mostly results from the nanometer-scaled texture of the ZnO films, while the micrometer-scaled texture of the Si substrate has a limited contribution. The results of this work provide important information for optimized growth of textured and well-faceted ZnO grown on wafer-based silicon solar cells and can be utilized for efficiency enhancement and optimization of device materials and structures, such as heterojunction with intrinsic thin layer (HIT solar cells.

  10. Use of artificial substrate in pond culture of freshwater prawn (Macrobrachium rosenbergii: a new approach regarding growth performance and economic return

    Directory of Open Access Journals (Sweden)

    Dilshad Milky Tuly

    2014-04-01

    Full Text Available An experiment was conducted for six months to evaluate the effects of artificial substrates on the survival, growth and production of Macrobrachium rosenbergii juveniles. The treatment T1 contained locally available bamboo-made substrate both vertical and horizontal and treatment T2 received no substrate. Juvenile prawns (0.40±0.13 g were stocked at the rate of 19,760 prawns ha-1. The water quality parameters range such as temperature, pH and DO were 22.06-33.45°C, 7.70-8.40 and 4.75-6.15 mgl-1 respectively which was no significant difference (P0.05 than T2 (56.87%. The specific growth rate, food conversion ratio and protein efficiency ratio were 1.19 % and 1.14 %, 3.15 and 4.39, 0.98 and 0.71 in T1 and T2 respectively which were not significantly different (P0.05 than T2. Thus growth and survival of prawn juveniles improved in presence of artificial substrate which could be economically viable technique for the freshwater prawn culture.

  11. Substrate and growth related microstructural and magnetic properties in La{sub 0.67}Sr{sub 0.33}MnO{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Hawley, M.E.; Brown, G.W.; Kwon, C.; Jia, Q.

    1998-12-31

    Ambient observation of magnetic domain structures by magnetic force microscopy (MFM) in La{sub 0.67}Sr{sub 0.33}MnO{sub 3} films has not yet been clearly correlated with stresses induced by kinetic or thermodynamic growth processes or the compressive (LaAlO{sub 3}) or tensile (SrTiO{sub 3}) nature of the film-substrate lattice mismatch. Although domain-like magnetic structures have been seen in some as-grown films and related to substrate-induced stress and film thickness, no magnetic structure has been seen for other films grown under similar conditions on the same pair of substrates. In this study the authors have grown films over a range of temperatures by pulsed-laser deposition, using the above substrates, to determine the relationship between growth and stress-induced magnetic structures. Results from scanning tunneling, atomic force, and magnetic force microscopies, measurements of temperature-dependent magnetization and structure-dependent coercivity show the relationship between growth and magnetic properties. Maze-like domain structures, with separations between 150 nm and 200 nm, were only observed for the thicker films grown at the highest temperature, 800 C. Application of an in-plane magnetic field converted these domain structures to stripe-like domains whose spacing and out of plane component decreased as the field was increased.

  12. Effect of Ni addition to the Cu substrate on the interfacial reaction and IMC growth with Sn3.0Ag0.5Cu solder

    Science.gov (United States)

    Zhang, Xudong; Hu, Xiaowu; Jiang, Xiongxin; Li, Yulong

    2018-04-01

    The formation and growth of intermetallic compound (IMC) layer at the interface between Sn3.0Ag0.5Cu (SAC305) solder and Cu- xNi ( x = 0, 0.5, 1.5, 5, 10 wt%) substrate during reflowing and aging were investigated. The soldering was conducted at 270 °C using reflowing method, following by aging treatment at 150 °C for up to 360 h. The experimental results indicated that the total thickness of IMC increased with increasing aging time. The scallop-like Cu6Sn5 and planar-like Cu3Sn IMC layer were observed between SAC305 solder and purely Cu substrate. As the content of Ni element in Cu substrate was 0.5% or 1.5%, the scallop-like Cu6Sn5 and planar-like Cu3Sn IMC layer were still found between solder and Cu-Ni substrate and the total thickness of IMC layer decreased with the increasing Ni content. Besides, when the Ni content was up to 5%, the long prismatic (Cu,Ni)6Sn5 phase was the only product between solder and substrate and the total thickness of IMC layer increased significantly. Interestingly, the total thickness of IMC decreased slightly as the Ni addition was up to 10%. In the end, the grains of interfacial IMC layer became coarser with aging time increasing while the addition of Ni in Cu substrate could refine IMC grains.

  13. Role of unsaturated derivatives of spermidine as substrates for spermine synthase and in supporting growth of SV-3T3 cells.

    OpenAIRE

    Pegg, A E; Nagarajan, S; Naficy, S; Ganem, B

    1991-01-01

    Synthetic unsaturated analogues of the natural polyamine were examined as possible substrates for spermine synthase and as replacements for spermidine in supporting the growth of SV-3T3 cells. It was found that N-(3-aminopropyl)-1,4-diamino-cis-but-2-ene [the cis isomer of the alkene analogue of spermidine] was a good substrate for spermine synthase, but that the trans isomer [N-(3-aminopropyl)-1,4-diamino-trans-but-2-ene] and the alkene analogue [N-(3-aminopropyl)-1,4-diaminobut-2-yne] were ...

  14. Buffer free MOCVD growth of GaN on 4H-SiC: Effect of substrate treatments and UV-photoirradiation

    Energy Technology Data Exchange (ETDEWEB)

    Losurdo, Maria; Giangregorio, Maria M.; Bruno, Giovanni [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR and INSTM UdR Bari, via Orabona, 4, 70126 Bari (Italy); Kim, Tong-Ho; Choi, Soojeong; Brown, April [Department of Electrical and Computer Engineering, Duke University, Durham, NC 27709 (United States)

    2006-05-15

    GaN has been grown directly on the Si-face 4H-SiC(0001) substrates using remote plasma-assisted metalorganic chemical vapour deposition (RP-MOCVD) with UV-light irradiation. The effects of substrate pre-treatments and UV-photoirradiation of the growth surface on GaN nucleation and film morphology are investigated. Optical data from spectroscopic ellipsometry measurements and morphological data show an improvement in nucleation and material quality with UV-light irradiation. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  15. The diversity and specificity of the extracellular proteome in the cellulolytic bacterium Caldicellulosiruptor bescii is driven by the nature of the cellulosic growth substrate.

    Science.gov (United States)

    Poudel, Suresh; Giannone, Richard J; Basen, Mirko; Nookaew, Intawat; Poole, Farris L; Kelly, Robert M; Adams, Michael W W; Hettich, Robert L

    2018-01-01

    Caldicellulosiruptor bescii is a thermophilic cellulolytic bacterium that efficiently deconstructs lignocellulosic biomass into sugars, which subsequently can be fermented into alcohols, such as ethanol, and other products. Deconstruction of complex substrates by C. bescii involves a myriad of highly abundant, substrate-specific extracellular solute binding proteins (ESBPs) and carbohydrate-active enzymes (CAZymes) containing carbohydrate-binding modules (CBMs). Mass spectrometry-based proteomics was employed to investigate how these substrate recognition proteins and enzymes vary as a function of lignocellulosic substrates. Proteomic analysis revealed several key extracellular proteins that respond specifically to either C5 or C6 mono- and polysaccharides. These include proteins of unknown functions (PUFs), ESBPs, and CAZymes. ESBPs that were previously shown to interact more efficiently with hemicellulose and pectin were detected in high abundance during growth on complex C5 substrates, such as switchgrass and xylan. Some proteins, such as Athe_0614 and Athe_2368, whose functions are not well defined were predicted to be involved in xylan utilization and ABC transport and were significantly more abundant in complex and C5 substrates, respectively. The proteins encoded by the entire glucan degradation locus (GDL; Athe_1857, 1859, 1860, 1865, 1867, and 1866) were highly abundant under all growth conditions, particularly when C. bescii was grown on cellobiose, switchgrass, or xylan. In contrast, the glycoside hydrolases Athe_0609 (Pullulanase) and 0610, which both possess CBM20 and a starch binding domain, appear preferential to C5/complex substrate deconstruction. Some PUFs, such as Athe_2463 and 2464, were detected as highly abundant when grown on C5 substrates (xylan and xylose), also suggesting C5-substrate specificity. This study reveals the protein membership of the C. bescii secretome and demonstrates its plasticity based on the complexity (mono

  16. Hepatocyte growth factor regulated tyrosine kinase substrate in the peripheral development and function of B-cells

    International Nuclear Information System (INIS)

    Nagata, Takayuki; Murata, Kazuko; Murata, Ryo; Sun, Shu-lan; Saito, Yutaro; Yamaga, Shuhei; Tanaka, Nobuyuki; Tamai, Keiichi; Moriya, Kunihiko; Kasai, Noriyuki; Sugamura, Kazuo; Ishii, Naoto

    2014-01-01

    Highlights: •ESCRT-0 protein regulates the development of peripheral B-cells. •BCR expression on cell surface should be controlled by the endosomal-sorting system. •Hrs plays important roles in responsiveness to Ag stimulation in B lymphocytes. -- Abstract: Hepatocyte growth factor (HGF)-regulated tyrosine kinase substrate (Hrs) is a vesicular sorting protein that functions as one of the endosomal-sorting proteins required for transport (ESCRT). Hrs, which binds to ubiquitinated proteins through its ubiquitin-interacting motif (UIM), contributes to the lysosomal transport and degradation of ubiquitinated membrane proteins. However, little is known about the relationship between B-cell functions and ESCRT proteins in vivo. Here we examined the immunological roles of Hrs in B-cell development and functions using B-cell-specific Hrs-deficient (Hrs flox/flox ;mb1 cre/+ :Hrs-cKO) mice, which were generated using a cre-LoxP recombination system. Hrs deficiency in B-cells significantly reduced T-cell-dependent antibody production in vivo and impaired the proliferation of B-cells treated in vitro with an anti-IgM monoclonal antibody but not with LPS. Although early development of B-cells in the bone marrow was normal in Hrs-cKO mice, there was a significant decrease in the number of the peripheral transitional B-cells and marginal zone B-cells in the spleen of Hrs-cKO mice. These results indicate that Hrs plays important roles during peripheral development and physiological functions of B lymphocytes

  17. Hepatocyte growth factor regulated tyrosine kinase substrate in the peripheral development and function of B-cells

    Energy Technology Data Exchange (ETDEWEB)

    Nagata, Takayuki [Department of Pharmacy, Iwaki Meisei University, 5-5-1 Chuodai Iino, Iwaki, Fukushima 970-8551 (Japan); Department of Microbiology and Immunology, Tohoku University Graduate School of Medicine, 2-1 Seiryo-machi, Aoba-ku, Sendai 980-8575 (Japan); Murata, Kazuko, E-mail: murata-k@iwakimu.ac.jp [Department of Pharmacy, Iwaki Meisei University, 5-5-1 Chuodai Iino, Iwaki, Fukushima 970-8551 (Japan); Murata, Ryo [Department of Pharmacy, Iwaki Meisei University, 5-5-1 Chuodai Iino, Iwaki, Fukushima 970-8551 (Japan); Sun, Shu-lan [Department of Microbiology and Immunology, Tohoku University Graduate School of Medicine, 2-1 Seiryo-machi, Aoba-ku, Sendai 980-8575 (Japan); Saito, Yutaro; Yamaga, Shuhei [Department of Pharmacy, Iwaki Meisei University, 5-5-1 Chuodai Iino, Iwaki, Fukushima 970-8551 (Japan); Tanaka, Nobuyuki; Tamai, Keiichi [Division of Immunology, Miyagi Cancer Research Institute, 47-1 Nodayama, Medeshima-Shiode, Natori 981-1293 (Japan); Moriya, Kunihiko [Department of Pediatrics, Tohoku University School of Medicine, 1-1 Seiryo-machi, Aoba-ku, Sendai 980-8575 (Japan); Kasai, Noriyuki [Institute for Animal Experimentation, Tohoku University Graduate School of Medicine, 2-1 Seiryo-machi, Aoba-ku, Sendai 980-8575 (Japan); Sugamura, Kazuo [Division of Immunology, Miyagi Cancer Research Institute, 47-1 Nodayama, Medeshima-Shiode, Natori 981-1293 (Japan); Ishii, Naoto [Department of Microbiology and Immunology, Tohoku University Graduate School of Medicine, 2-1 Seiryo-machi, Aoba-ku, Sendai 980-8575 (Japan)

    2014-01-10

    Highlights: •ESCRT-0 protein regulates the development of peripheral B-cells. •BCR expression on cell surface should be controlled by the endosomal-sorting system. •Hrs plays important roles in responsiveness to Ag stimulation in B lymphocytes. -- Abstract: Hepatocyte growth factor (HGF)-regulated tyrosine kinase substrate (Hrs) is a vesicular sorting protein that functions as one of the endosomal-sorting proteins required for transport (ESCRT). Hrs, which binds to ubiquitinated proteins through its ubiquitin-interacting motif (UIM), contributes to the lysosomal transport and degradation of ubiquitinated membrane proteins. However, little is known about the relationship between B-cell functions and ESCRT proteins in vivo. Here we examined the immunological roles of Hrs in B-cell development and functions using B-cell-specific Hrs-deficient (Hrs{sup flox/flox};mb1{sup cre/+}:Hrs-cKO) mice, which were generated using a cre-LoxP recombination system. Hrs deficiency in B-cells significantly reduced T-cell-dependent antibody production in vivo and impaired the proliferation of B-cells treated in vitro with an anti-IgM monoclonal antibody but not with LPS. Although early development of B-cells in the bone marrow was normal in Hrs-cKO mice, there was a significant decrease in the number of the peripheral transitional B-cells and marginal zone B-cells in the spleen of Hrs-cKO mice. These results indicate that Hrs plays important roles during peripheral development and physiological functions of B lymphocytes.

  18. The role of Aspergillus flavus veA in the production of extracellular proteins during growth on starch substrates.

    Science.gov (United States)

    Duran, Rocio M; Gregersen, Scott; Smith, Timothy D; Bhetariya, Preetida J; Cary, Jeffrey W; Harris-Coward, Pamela Y; Mattison, Christopher P; Grimm, Casey; Calvo, Ana M

    2014-06-01

    The aflatoxin-producer and opportunistic plant pathogenic, filamentous fungus Aspergillus flavus is responsible for the contamination of corn and other important agricultural commodities. In order to obtain nutrients from the host A. flavus produces a variety of extracellular hydrolytic enzymes. Interestingly, A. flavus amylase and protease activity are dependent on the global regulator veA, a gene known to regulate morphogenesis and secondary metabolism in numerous fungi. Analysis of starch degradation by fungal enzymes secreted into broths of starch- or corn kernel-based media showed a notable accumulation of glucose in samples of the A. flavus control strain while the deletion veA sample accumulated high levels of maltose and maltotriose and only a small amount of glucose. Furthermore, SDS-PAGE and proteomics analysis of culture broths from starch- or corn kernel-based media demonstrated differential production of a number of proteins that included a reduction in the amount of a glucoamylase protein in the veA mutant compared to the control strain, while an alpha-amylase was produced in greater quantities in the veA mutant. Quantitative real-time PCR and western blot analyses using anti-glucoamylase or alpha-amylase antisera supported the proteomics results. Additionally, an overall reduction in protease activity was observed in the veA mutant including production of the alkaline protease, oryzin, compared to the control strain. These findings contribute to our knowledge of mechanisms controlling production of hydrolases and other extracellular proteins during growth of A. flavus on natural starch-based substrates.

  19. Low-temperature growth of well-aligned zinc oxide nanorod arrays on silicon substrate and their photocatalytic application

    Directory of Open Access Journals (Sweden)

    Azam A

    2014-04-01

    Full Text Available Ameer Azam,1 Saeed Salem Babkair21Center of Nanotechnology, King Abdulaziz University, Jeddah, Saudi Arabia; 2Center of Nanotechnology, Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah, Saudi ArabiaAbstract: Well-aligned and single-crystalline zinc oxide (ZnO nanorod arrays were grown on silicon (Si substrate using a wet chemical route for the photodegradation of organic dyes. Structural analysis using X-ray diffraction, high-resolution transmission electron microscopy, and selected area electron diffraction confirmed the formation of ZnO nanorods grown preferentially oriented in the (001 direction and with a single phase nature with a wurtzite structure. Field emission scanning electron microscopy and transmission electron microscopy micrographs showed that the length and diameter of the well-aligned rods were about ~350–400 nm and ~80–90 nm, respectively. Raman scattering spectra of ZnO nanorod arrays revealed the characteristic E2 (high mode that is related to the vibration of oxygen atoms in the wurtzite ZnO. The photodegradation of methylene blue (MB using ZnO nanorod arrays was performed under ultraviolet light irradiation. The results of photodegradation showed that ZnO nanorod arrays were capable of degrading ~80% of MB within 60 minutes of irradiation, whereas ~92% of degradation was achieved in 120 minutes. Complete degradation of MB was observed after 270 minutes of irradiation time. Owing to enhanced photocatalytic degradation efficiency and low-temperature growth method, prepared ZnO nanorod arrays may open up the possibility for the successful utilization of ZnO nanorod arrays as a future photocatalyst for environmental remediation.Keywords: ZnO, nanorods, XRD, photodegradation

  20. Dolomitic lime amendment affects pine bark substrate pH, nutrient availability, and plant growth: A review

    Science.gov (United States)

    Dolomitic lime (DL) is one of the most commonly used fertilizer amendments in nursery container substrates. It is used to adjust pH of pine bark substrates from their native pH, 4.1 to 5.1, up to about pH 6. Additions of DL have been shown to be beneficial, inconsequential, or detrimental dependin...

  1. Investigation of growth, structural and electronic properties of V{sub 2}O{sub 3} thin films on selected substrates

    Energy Technology Data Exchange (ETDEWEB)

    Nateprov, Alexei

    2006-08-15

    The present work is devoted to the experimental study of the MI transition in V{sub 2}O{sub 3} thin films, grown on different substrates. The main goal of the work was to develop a technology of growth of V{sub 2}O{sub 3} thin films on substrates with different electrical and structural properties (diamond and LiNbO{sub 3}), designed for specific applications. The structural and electrical properties of the obtained films were characterized in detail with a special focus on their potential applications. The MIT of V{sub 2}O{sub 3} was investigated by SAW using first directly deposited V{sub 2}O{sub 3} thin film onto a LiNbO{sub 3} substrate. (orig.)

  2. Molecular-beam epitaxial growth of insulating AlN on surface-controlled 6H-SiC substrate by HCl gas etching

    International Nuclear Information System (INIS)

    Onojima, Norio; Suda, Jun; Matsunami, Hiroyuki

    2002-01-01

    Insulating AlN layers were grown on surface-controlled 6H-SiC subtrates by molecular-beam epitaxy (MBE) using elemental Al and rf plasma-excited nitrogen (N*). HCl gas etching was introduced as an effective pretreatment method of substrate for MBE growth of AlN. 6H-SiC substrates pretreated by HCl gas etching had no surface polishing scratches and an atomically flat surface. In addition, evident ( 3 √x 3 √)R30 deg. surface reconstruction was observed even before thermal cleaning. AlN layers grown on this substrate had no defects related to surface polishing scratches and excellent insulating characteristics

  3. The evaluation of the growth and nutrition conditions of the garden nursery material Prunus and Thuja according to the use of various cultivating substrates and systems of fertilization

    Directory of Open Access Journals (Sweden)

    Tomáš Meisl

    2006-01-01

    Full Text Available The influence of different peat-based cultivating substrates and the system of fertilization on the nutrition conditions and growth characteristics of garden nursery material Prunus kurilensis ‘Brillant’ and Thuja occidentalis ‘Smaragd’ were observed during a three-year experiment. Three kinds of substrates were tested: peat + pumice (pemza proportioned 8:2, fermented bark + peat + clay proportioned 4:4:2, fermented bark + peat + clay proportioned 4:4:2. Two fertilizers were used: granular controlled-release fertilizer – Osmocote, and watersoluble with irrigation – Kristalon.A higher content of macroelements was observed in the leaves of Prunus. The only exception was potassium, the quantity of which was demonstrably higher in the assimilative organs of Thuja. On the contrary, Thuja had a higher content of trace elements except for copper and iron. The highest contents of nitrogen, potassium, and iron were statistically proved in leaves of woods grown in the substrate of peat and pumice due to its higher sorption capability. A better nutrition conditions in almost all nutrients were observed at plants where the gradually effective Osmocote was applied. The exceptions were calcium, molybdenum and iron, the content of which was, on the contrary, higher where Kristalon with irrigation were used. Physical characteristics of the growing substrates that contained bark were significantly worse at the end of the experiment. This was even intensified by clay. The substrate containing peat and pumice were less stable. The best growth was observed in woods grown in the substrate of peat and pumice, ie where peat was not substituted by bark, and, at the same time, expanded clay was used instead of classic clay. Higher values of growth characteristics were demonstratively observed after the Osmocote fertilizer was applied.The results of the experiment reveal that pumice should be recommended, pemza with a high sorption capability and the

  4. Substrate effect on the growth of monolayer dendritic MoS2 on LaAlO3 (100) and its electrocatalytic applications

    Science.gov (United States)

    Li, Cong; Zhang, Yu; Ji, Qingqing; Shi, Jianping; Chen, Zhaolong; Zhou, Xiebo; Fang, Qiyi; Zhang, Yanfeng

    2016-09-01

    In accommodating the rapid development of two-dimensional (2D) nanomaterials, chemical vapor deposition (CVD) has become a powerful tool for their batch production with desirable characteristics, such as high crystal quality, large domain size, and tunable domain shape. The crystallinity and morphology of the growth substrates usually play a crucial role in the CVD synthesis of high-quality monolayer MoS2, a kind of 2D layered material which has ignited huge interest in nanoelectronics, optoelectronics and energy harvesting, etc. Herein, by utilizing a low-pressure chemical vapor deposition (LPCVD) system, we demonstrate a regioselective synthesis of monolayer MoS2 on the corrugated single-crystal LaAlO3 (100) with twin crystal domains induced by the second-order phase transition. Unique dendritic morphologies with tunable nucleation densities were obtained in different regions of the undulated substrate, presenting a strong substrate modulation effect. Interestingly, the exposure of abundant active edge sites along with the rather high nucleation density makes the monolayer dendritic MoS2 a good electrocatalyst for hydrogen evolution reaction (HER), particularly featured by a rather high exchange current density (70.4 μA cm-2). Furthermore, uniform monolayer MoS2 films can also be obtained and transferred to arbitrary substrates. We believe that this work provides a new growth system for the controllable synthesis of 2D layered materials with unique dendritic morphologies, as well as its great application potential in energy conversion and harvesting.

  5. Real-time observation of growth and orientation of Sm-Ba-Cu-O phases on a Sm-211 whisker substrate by high-temperature optical microscopy

    Czech Academy of Sciences Publication Activity Database

    Sun, J.L.; Huang, Y.B.; Cheng, L.; Yao, X.; Lai, Y.J.; Jirsa, Miloš

    2009-01-01

    Roč. 9, č. 2 (2009), 898-902 ISSN 1528-7483 R&D Projects: GA ČR GA202/08/0722 Institutional research plan: CEZ:AV0Z10100520 Keywords : high-temperature optical microscopy * growth and orientation of Sm-Ba-Cu-O phases * Sm-211 whisker substrate Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 4.162, year: 2009

  6. The role of feeding regimens in the growth of neonate broad-banded water snakes, Nerodia fasciata confluens, and possible effects on reproduction.

    Science.gov (United States)

    Scudder, R M; Burghardt, G M

    1985-05-01

    The effect of different feeding regimens on the growth pattern of Nerodia fasciata confluens was tested using a litter of 18 captive-born neonates. The snakes were divided among three feeding groups: one group fed once per week, another fed twice per week, and the third fed on alternate days. The once per week and the twice per week groups were offered the same weight of food each week, while the alternate-day group was offered food in excess of ingestion levels during each feeding session. The results indicate that there is a shift in the allocation of energy for growth in weight, snout-vent length, and tail length with a change in the feeding regimen. Females were affected more than the males. The results are discussed in relation to their possible effect on reproduction.

  7. The dependence of the wavelength on MBE growth parameters of GaAs quantum dot in AlGaAs NWs on Si (111) substrate

    Science.gov (United States)

    Reznik, R. R.; Shtrom, I. V.; Samsonenko, Yu B.; Khrebtov, A. I.; Soshnikov, I. P.; Cirlin, G. E.

    2017-11-01

    The data on the growth peculiarities and physical properties of GaAs insertions embedded in AlGaAs nanowires grown on Si (111) substrates by Au-assisted molecular beam epitaxy are presented. It is shown that by varying of the growth parameters it is possible to form structures like quantum dots emitting in a wide wavelengths range for both active and barrier parts. The technology proposed opens new possibilities for the integration of direct-band AIIIBV materials on silicon platform.

  8. Cultured representatives of two major phylogroups of human colonic Faecalibacterium prausnitzii can utilize pectin, uronic acids, and host-derived substrates for growth.

    Science.gov (United States)

    Lopez-Siles, Mireia; Khan, Tanweer M; Duncan, Sylvia H; Harmsen, Hermie J M; Garcia-Gil, L Jesús; Flint, Harry J

    2012-01-01

    Faecalibacterium prausnitzii is one of the most abundant commensal bacteria in the healthy human large intestine, but information on genetic diversity and substrate utilization is limited. Here, we examine the phylogeny, phenotypic characteristics, and influence of gut environmental factors on growth of F. prausnitzii strains isolated from healthy subjects. Phylogenetic analysis based on the 16S rRNA sequences indicated that the cultured strains were representative of F. prausnitzii sequences detected by direct analysis of fecal DNA and separated the available isolates into two phylogroups. Most F. prausnitzii strains tested grew well under anaerobic conditions on apple pectin. Furthermore, F. prausnitzii strains competed successfully in coculture with two other abundant pectin-utilizing species, Bacteroides thetaiotaomicron and Eubacterium eligens, with apple pectin as substrate, suggesting that this species makes a contribution to pectin fermentation in the colon. Many F. prausnitzii isolates were able to utilize uronic acids for growth, an ability previously thought to be confined to Bacteroides spp. among human colonic anaerobes. Most strains grew on N-acetylglucosamine, demonstrating an ability to utilize host-derived substrates. All strains tested were bile sensitive, showing at least 80% growth inhibition in the presence of 0.5 μg/ml bile salts, while inhibition at mildly acidic pH was strain dependent. These attributes help to explain the abundance of F. prausnitzii in the colonic community but also suggest factors in the gut environment that may limit its distribution.

  9. The 2010 Broad Prize

    Science.gov (United States)

    Education Digest: Essential Readings Condensed for Quick Review, 2011

    2011-01-01

    A new data analysis, based on data collected as part of The Broad Prize process, provides insights into which large urban school districts in the United States are doing the best job of educating traditionally disadvantaged groups: African-American, Hispanics, and low-income students. Since 2002, The Eli and Edythe Broad Foundation has awarded The…

  10. TiO2 coatings via atomic layer deposition on polyurethane and polydimethylsiloxane substrates: Properties and effects on C. albicans growth and inactivation process

    Science.gov (United States)

    Pessoa, R. S.; dos Santos, V. P.; Cardoso, S. B.; Doria, A. C. O. C.; Figueira, F. R.; Rodrigues, B. V. M.; Testoni, G. E.; Fraga, M. A.; Marciano, F. R.; Lobo, A. O.; Maciel, H. S.

    2017-11-01

    Atomic layer deposition (ALD) surges as an attractive technology to deposit thin films on different substrates for many advanced biomedical applications. Herein titanium dioxide (TiO2) thin films were successful obtained on polyurethane (PU) and polydimethylsiloxane (PDMS) substrates using ALD. The effect of TiO2 films on Candida albicans growth and inactivation process were also systematic discussed. TiCl4 and H2O were used as precursors at 80 °C, while the reaction cycle number ranged from 500 to 2000. Several chemical, physical and physicochemical techniques were used to evaluate the growth kinetics, elemental composition, material structure, chemical bonds, contact angle, work of adhesion and surface morphology of the ALD TiO2 thin films grown on both substrates. For microbiological analyses, yeasts of standard strains of C. albicans were grown on non- and TiO2-coated substrates. Next, the antifungal and photocatalytic activities of the TiO2 were also investigated by counting the colony-forming units (CFU) before and after UV-light treatment. Chlorine-doped amorphous TiO2 films with varied thicknesses and Cl concentration ranging from 2 to 12% were obtained. In sum, the ALD TiO2 films suppressed the yeast-hyphal transition of C. albicans onto PU, however, a high adhesion of yeasts was observed. Conversely, for PDMS substrate, the yeast adhesion did not change, as observed in control. Comparatively to control, the TiO2-covered PDMS had a reduction in CFU up to 59.5% after UV treatment, while no modification was observed to TiO2-covered PU. These results pointed out that ALD chlorine-doped amorphous TiO2 films grown on biomedical polymeric surfaces may act as fungistatic materials. Furthermore, in case of contamination, these materials may also behave as antifungal materials under UV light exposure.

  11. Impact of first-step potential and time on the vertical growth of ZnO nanorods on ITO substrate by two-step electrochemical deposition

    International Nuclear Information System (INIS)

    Kim, Tae Gyoum; Jang, Jin-Tak; Ryu, Hyukhyun; Lee, Won-Jae

    2013-01-01

    Highlights: •We grew vertical ZnO nanorods on ITO substrate using a two-step continuous potential process. •The nucleation for the ZnO nanorods growth was changed by first-step potential and duration. •The vertical ZnO nanorods were well grown when first-step potential was −1.2 V and 10 s. -- Abstract: In this study, we analyzed the growth of ZnO nanorods on an ITO (indium doped tin oxide) substrate by electrochemical deposition using a two-step, continuous potential process. We examined the effect of changing the first-step potential as well as the first-step duration on the morphological, structural and optical properties of ZnO nanorods, measured via using field emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD) and photoluminescence (PL), respectively. As a result, vertical ZnO nanorods were grown on ITO substrate without the need for a template when the first-step potential was set to −1.2 V for a duration of 10 s, and the second-step potential was set to −0.7 V for a duration of 1190 s. The ZnO nanorods on this sample showed the highest XRD (0 0 2)/(1 0 0) peak intensity ratio and the highest PL near band edge emission to deep level emission peak intensity ratio (NBE/DLE). In this study, the nucleation for vertical ZnO nanorod growth on an ITO substrate was found to be affected by changes in the first-step potential and first-step duration

  12. Growth of InGaN multiple quantum wells and GaN eplilayer on GaN substrate

    International Nuclear Information System (INIS)

    Lee, Sung-Nam; Paek, H.S.; Son, J.K.; Sakong, T.; Yoon, E.; Nam, O.H.; Park, Y.

    2006-01-01

    We investigated that the surface morphology of GaN epilayers was significantly affected by the surface tilt orientation of GaN substrate. Surface morphologies of GaN epilayers on GaN substrates show three types: mirror, wavy, and hillock. These surface morphologies are dependent on the surface orientation of GaN substrates. It is found that the hillock morphology of GaN epilayer was formed on the GaN substrate with surface tilt orientation less than 0.1 o . As the surface tilt angle increased to 0.35 o , the surface morphology varied from hillock to wavy morphology. Above a surface tilt angle of 0.4 o , surface morphology changed to the mirror-like type morphology. Additionally, these three types of GaN surface morphology also affected the optical quality of GaN epilayers as well as InGaN multiple quantum wells on GaN substrates by non-uniform In incorporation on the different surface morphologies of GaN epilayers

  13. GaN nanorods and LED structures grown on patterned Si and AlN/Si substrates by selective area growth

    Energy Technology Data Exchange (ETDEWEB)

    Li, Shunfeng; Fuendling, Soenke; Soekmen, Uensal; Neumann, Richard; Merzsch, Stephan; Peiner, Erwin; Wehmann, Hergo-Heinrich; Waag, Andreas [Institut fuer Halbleitertechnik, TU Braunschweig (Germany); Hinze, Peter; Weimann, Thomas [Physikalisch-Technische Bundesanstalt (PTB), Braunschweig (Germany); Jahn, Uwe; Trampert, Achim; Riechert, Henning [Paul-Drude-Institut fuer Festkoerperelektronik, Berlin (Germany)

    2010-07-15

    GaN nanorods (NRs) show promising applications in high-efficiency light emitting diodes, monolithic white light emission and optical interconnection due to their superior properties. In this work, we performed GaN nanostructures growth by pre-patterning the Si and AlN/Si substrates. The pattern was transferred to Si and AlN/Si substrates by photolithography and inductively-coupled plasma etching. GaN NRs were grown on these templates by metal-organic vapour phase epitaxy (MOVPE). GaN grown on Si pillar templates show a truncated pyramidal structure. Transmission electron microscopy measurements demonstrated clearly that the threading dislocations bend to the side facets of the GaN nanostructures and terminate. GaN growth can also be observed on the sidewalls and bottom surface between the Si pillars. A simple phenomenological model is proposed to explain the GaN nanostructure growth on Si pillar templates. Based on this model, we developed another growth method, by which we grow GaN rod structures on pre-patterned AlN/Si templates. By in-situ nitridation and decreasing of the V/III ratio, we found that GaN rods only grew on the patterned AlN/Si dots with an aspect ratio of about 1.5 - 2. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  14. A Novel GH7 Endo-β-1,4-Glucanase from Neosartorya fischeri P1 with Good Thermostability, Broad Substrate Specificity and Potential Application in the Brewing Industry.

    Directory of Open Access Journals (Sweden)

    Yun Liu

    Full Text Available An endo-β-1,4-glucanase gene, cel7A, was cloned from the thermophilic cellulase-producing fungus Neosartorya fischeri P1 and expressed in Pichia pastoris. The 1,410-bp full-length gene encodes a polypeptide of 469 amino acids consisting of a putative signal peptide at residues 1-20, a catalytic domain of glycoside hydrolase family 7 (GH7, a short Thr/Ser-rich linker and a family 1 carbohydrate-binding module (CBM 1. The purified recombinant Cel7A had pH and temperature optima of pH 5.0 and 60°C, respectively, and showed broad pH adaptability (pH 3.0-6.0 and excellent stability at pH3.0-8.0 and 60°C. Belonging to the group of nonspecific endoglucanases, Cel7A exhibited the highest activity on barley β-glucan (2020 ± 9 U mg-1, moderate on lichenan and CMC-Na, and weak on laminarin, locust bean galactomannan, Avicel, and filter paper. Under simulated mashing conditions, addition of Cel7A (99 μg reduced the mash viscosity by 9.1% and filtration time by 24.6%. These favorable enzymatic properties make Cel7A as a good candidate for applications in the brewing industry.

  15. Facile synthesis, growth mechanism and reversible superhydrophobic and superhydrophilic properties of non-flaking CuO nanowires grown from porous copper substrates

    International Nuclear Information System (INIS)

    Zhang Qiaobao; Xu Daguo; Zhang Kaili; Hung, Tak Fu

    2013-01-01

    Reversible superhydrophobic and superhydrophilic surfaces based on porous substrates covered with CuO nanowires are developed in this study. A facile thermal oxidation method is used to synthesize non-flaking bicrystalline CuO nanowires on porous copper substrates in static air. The effects of thermal oxidation temperature and duration are systemically studied. The growth mechanism of the obtained non-flaking CuO nanowires is presented and the compression stress is believed to be the key driving force. The wettability of the CuO nanowires after chemical modification with trichloro(1H,1H,2H,2H-perfluorooctyl)silane is systemically investigated. The porous substrates covered with CuO nanowires exhibit excellent superhydrophobic performance with almost no water adhesion and no apparent drag resistance, and a maximum static water contact angle of 162 ± 2° is observed. Moreover, a rapid reversibly switchable wettability between superhydrophobic and superhydrophilic states is realized by the alternation of air–plasma treatment and surface fluorination. The porous substrates covered with CuO nanowires will find promising applications in surface and corrosion protection, liquid transportation, oil–water separation, and self-cleaning surfaces. (paper)

  16. MOD approach for the growth of epitaxial CeO2 buffer layers on biaxially textured Ni-W substrates for YBCO coated conductors

    International Nuclear Information System (INIS)

    Bhuiyan, M S; Paranthaman, M; Sathyamurthy, S; Aytug, T; Kang, S; Lee, D F; Goyal, A; Payzant, E A; Salama, K

    2003-01-01

    We have grown epitaxial CeO 2 buffer layers on biaxially textured Ni-W substrates for YBCO coated conductors using a newly developed metal organic decomposition (MOD) approach. Precursor solution of 0.25 M concentration was spin coated on short samples of Ni-3 at%W (Ni-W) substrates and heat-treated at 1100 C in a gas mixture of Ar-4%H 2 for 15 min. Detailed x-ray studies indicate that CeO 2 films have good out-of-plane and in-plane textures with full-width-half-maximum values of 5.8 deg. and 7.5 deg., respectively. High temperature in situ XRD studies show that the nucleation of CeO 2 films starts at 600 C and the growth completes within 5 min when heated at 1100 C. SEM and AFM investigations of CeO 2 films reveal a fairly dense microstructure without cracks and porosity. Highly textured YSZ barrier layers and CeO 2 cap layers were deposited on MOD CeO 2 -buffered Ni-W substrates using rf-magnetron sputtering. Pulsed laser deposition (PLD) was used to grow YBCO films on these substrates. A critical current, J c , of about 1.5 MA cm -2 at 77 K and self-field was obtained on YBCO (PLD)/CeO 2 (sputtered)/YSZ (sputtered)/CeO 2 (spin-coated)/Ni-W

  17. The growth of high density network of MOF nano-crystals across macroporous metal substrates - Solvothermal synthesis versus rapid thermal deposition

    Science.gov (United States)

    Maina, James W.; Gonzalo, Cristina Pozo; Merenda, Andrea; Kong, Lingxue; Schütz, Jürg A.; Dumée, Ludovic F.

    2018-01-01

    Fabrication of metal organic framework (MOF) films and membranes across macro-porous metal substrates is extremely challenging, due to the large pore sizes across the substrates, poor wettability, and the lack of sufficient reactive functional groups on the surface, which prevent high density nucleation of MOF crystals. Herein, macroporous stainless steel substrates (pore size 44 × 40 μm) are functionalized with amine functional groups, and the growth of ZIF-8 crystals investigated through both solvothermal synthesis and rapid thermal deposition (RTD), to assess the role of synthesis routes in the resultant membranes microstructure, and subsequently their performance. Although a high density of well interconnected MOF crystals was observed across the modified substrates following both techniques, RTD was found to be a much more efficient route, yielding high quality membranes under 1 h, as opposed to the 24 h required for solvothermal synthesis. The RTD membranes also exhibited high gas permeance, with He permeance of up to 2.954 ± 0.119 × 10-6 mol m-2 s-1 Pa-1, and Knudsen selectivities for He/N2, Ar/N2 and CO2/N2, suggesting the membranes were almost defect free. This work opens up route for efficient fabrication of MOF films and membranes across macro-porous metal supports, with potential application in electrically mediated separation applications.

  18. A study of the effects of aligned vertically growth time on ZnO nanorods deposited for the first time on Teflon substrate

    Science.gov (United States)

    Farhat, O. F.; Halim, M. M.; Ahmed, Naser M.; Oglat, Ammar A.; Abuelsamen, A. A.; Bououdina, M.; Qaeed, M. A.

    2017-12-01

    In this study, ZnO nanorods (NRs) were well deposited on Teflon substrates (PTFE) via a chemical bath deposition (CBD) method at low temperature. The consequences of growth time (1 h-4 h) on the structural and optical properties of the aligned ZnO (NRs) were investigated through X-ray diffraction, field-emission scanning electron microscopy (FESEM), and photoluminescence (PL) analyses. The results show that the ZnO (NRs) were preferred to grew aligned along the c-axis as hexagonal wurtzite structure as proved by the sharp and strong ZnO (002) peaks of the ZnO (NRs). Irrespective of the growth continuation, FESEM photos confirmed that the ZnO nanorods arrays were fit to be aligned along the c-axis and perpendicular to (PTFE) substrates. The ZnO nanorods that exhibited the sharper stand most intense PL peaks among the sample were grown for 3hs as demonstrated by PL spectra. The device further showed a sensitivity of 4068 to low-power (1.25 mW/cm2) 375 nm light pulses without an external bias. The measurements of photoresponse demonstrated the highly reproducible characteristics of the fabricated UV detector with rapid response and baseline recovery times of 48.05 ms. Thus, this work introduced a simple, low-cost method of fabricating rapid-response, and highly photosensitive UV detectors with zero power consumption on Teflon substrates.

  19. Distinction of [220] and [204] textures of Cu(In,Ga)Se{sub 2} film and their growth behaviors depending on substrate nature and Na incorporation

    Energy Technology Data Exchange (ETDEWEB)

    Cho, Dae-Hyung, E-mail: dhcho@etri.re.kr [IT Components and Materials Industry Technology Research Department, Electronics and Telecommunications Research Institute (ETRI), 218 Gajeongno, Yuseong-gu, Daejeon 305-700 (Korea, Republic of); Kim, Jeha [Department of Solar & Energy Engineering, Cheongju University, 298 Daeseongro, Sangdang-gu, Cheongju, Chungbuk 360-764 (Korea, Republic of); Chung, Yong-Duck [IT Components and Materials Industry Technology Research Department, Electronics and Telecommunications Research Institute (ETRI), 218 Gajeongno, Yuseong-gu, Daejeon 305-700 (Korea, Republic of); Korea University of Science and Technology (UST), 217 Gajeongno, Yuseong-gu, Daejeon 305-350 (Korea, Republic of)

    2015-08-31

    For better understanding of the structural property of polycrystalline tetragonal Cu(In,Ga)Se{sub 2} (CIGS) thin films grown on soda-lime glass, it is necessary to characterize the [220]- and [204]-oriented textures clearly that are related to the different physical properties. However, the distinction between the [220]- and [204]-oriented textures is very difficult because of their nearly identical plane spacings and atomic arrangements. Using X-ray diffraction techniques of high resolution θ–2θ scanning and reciprocal space mapping, we distinguished the [220]- and [204]-oriented textures of CIGS films and observed that the behaviors of [220] and [204] textures independently depended on both substrate nature and Na presence. We report the Na- and substrate-related dependence of the physical properties of the CIGS film was attributed to the independent growth behaviors of the [220] and [204] textures in the CIGS. - Highlights: • We investigated [220]- and [204]-oriented textures of Cu(In,Ga)Se{sub 2} (CIGS) films. • X-ray diffraction methods distinguished two textures. • The growth behaviors were influenced by underlying substrate and Na. • The [220] and [204] textures in CIGS should be differentially observed.

  20. Epitaxial growth of 100-μm thick M-type hexaferrite crystals on wide bandgap semiconductor GaN/Al{sub 2}O{sub 3} substrates

    Energy Technology Data Exchange (ETDEWEB)

    Hu, Bolin; Su, Zhijuan; Bennett, Steve; Chen, Yajie, E-mail: y.chen@neu.edu; Harris, Vincent G. [Center for Microwave Magnetic Materials and Integrated Circuits and Department of Electrical and Computer Engineering, Northeastern University, Boston, Massachusetts 02115 (United States)

    2014-05-07

    Thick barium hexaferrite BaFe{sub 12}O{sub 19} (BaM) films having thicknesses of ∼100 μm were epitaxially grown on GaN/Al{sub 2}O{sub 3} substrates from a molten-salt solution by vaporizing the solvent. X-ray diffraction measurement verified the growth of BaM (001) textured growth of thick films. Saturation magnetization, 4πM{sub s}, was measured for as-grown films to be 4.6 ± 0.2 kG and ferromagnetic resonance measurements revealed a microwave linewidth of ∼100 Oe at X-band. Scanning electron microscopy indicated clear hexagonal crystals distributed on the semiconductor substrate. These results demonstrate feasibility of growing M-type hexaferrite crystal films on wide bandgap semiconductor substrates by using a simple powder melting method. It also presents a potential pathway for the integration of ferrite microwave passive devices with active semiconductor circuit elements creating system-on-a-wafer architectures.

  1. Polarity driven simultaneous growth of free-standing and lateral GaAsP epitaxial nanowires on GaAs (001) substrate

    International Nuclear Information System (INIS)

    Sun, Wen; Xu, Hongyi; Guo, Yanan; Gao, Qiang; Hoe Tan, Hark; Jagadish, Chennupati; Zou, Jin

    2013-01-01

    Simultaneous growth of 〈111〉 B free-standing and ±[110] lateral GaAsP epitaxial nanowires on GaAs (001) substrates were observed and investigated by electron microscopy and crystallographic analysis. It was found that the growth of both free-standing and lateral ternary nanowires via Au catalysts was driven by the fact that Au catalysts prefer to maintain low-energy (111) B interfaces with surrounding GaAs(P) materials: in the case of free-standing nanowires, Au catalysts maintain (111) B interfaces with their underlying GaAsP nanowires; while in the case of lateral nanowires, each Au catalyst remain their side (111) B interfaces with the surrounding GaAs(P) material during the lateral nanowire growth

  2. In silico carbon molecular beam epitaxial growth of graphene on the h-BN substrate: carbon source effect on van der Waals epitaxy

    Science.gov (United States)

    Lee, Jonghoon; Varshney, Vikas; Park, Jeongho; Farmer, Barry L.; Roy, Ajit K.

    2016-05-01

    Against the presumption that hexagonal boron-nitride (h-BN) should provide an ideal substrate for van der Waals (vdW) epitaxy to grow high quality graphene films, carbon molecular beam epitaxy (CMBE) techniques using solid carbon sublimation have reported relatively poor quality of the graphene. In this article, the CMBE growth of graphene on the h-BN substrate is numerically studied in order to identify the effect of the carbon source on the quality of the graphene film. The carbon molecular beam generated by the sublimation of solid carbon source materials such as graphite and glassy carbon is mostly composed of atomic carbon, carbon dimers and carbon trimers. Therefore, the graphene film growth becomes a complex process involving various deposition characteristics of a multitude of carbon entities. Based on the study of surface adsorption and film growth characteristics of these three major carbon entities comprising graphite vapour, we report that carbon trimers convey strong traits of vdW epitaxy prone to high quality graphene growth, while atomic carbon deposition is a surface-reaction limited process accompanied by strong chemisorption. The vdW epitaxial behaviour of carbon trimers is found to be substantial enough to nucleate and develop into graphene like planar films within a nanosecond of high flux growth simulation, while reactive atomic carbons tend to impair the structural integrity of the crystalline h-BN substrate upon deposition to form an amorphous interface between the substrate and the growing carbon film. The content of reactive atomic carbons in the molecular beam is suspected to be the primary cause of low quality graphene reported in the literature. A possible optimization of the molecular beam composition towards the synthesis of better quality graphene films is suggested.Against the presumption that hexagonal boron-nitride (h-BN) should provide an ideal substrate for van der Waals (vdW) epitaxy to grow high quality graphene films, carbon

  3. Weed Growth and Efficacy of Pre-Applied Herbicides in Alternative Rooting Substrates Used in Container-Grown Nursery Crops

    Science.gov (United States)

    Container-grown nursery crops in the Southeastern United States are typically grown in a rooting substrate comprised primarily of the ground bark of pine trees. However pine bark is becoming less available and more costly due to changes in production and marketed practices within Southeastern pine f...

  4. Growth and Device Performance of AlGaN/GaN Heterostructure with AlSiC Precoverage on Silicon Substrate

    Directory of Open Access Journals (Sweden)

    Jae-Hoon Lee

    2014-01-01

    Full Text Available A crack-free AlGaN/GaN heterostructure was grown on 4-inch Si (111 substrate with initial dot-like AlSiC precoverage layer. It is believed that introducing the AlSiC layer between AlN wetting layer and Si substrate is more effective in obtaining a compressively stressed film growth than conventional Al precoverage on Si surface. The metal semiconductor field effect transistor (MESFET, fabricated on the AlGaN/GaN heterostructure grown with the AlSiC layer, exhibited normally on characteristics, such as threshold voltage of −2.3 V, maximum drain current of 370 mA/mm, and transconductance of 124 mS/mm.

  5. The continuous and persistent periodical growth induced by substrate accommodation in In{sub 2}O{sub 3} nanostructure chains and their photoluminescence properties

    Energy Technology Data Exchange (ETDEWEB)

    Shariati, Mohsen [Islamic Azad University, Department of Physics, Faculty of Science, Roudehen (Iran, Islamic Republic of)

    2014-12-10

    The growth of pyramidal and triangular beaded In{sub 2}O{sub 3} nanocrystal chains by using oxygen-assisted thermal evaporation, substrate accommodation and condensation method has been articulated. Self-assembled In{sub 2}O{sub 3} nanocrystal chains have been synthesized by the vapor-solid (VS) and vapor-liquid-solid (VLS) growth mechanism and also through controlling the kinetics factors (saturation ratio). A periodical one-dimensional (1-D) and persistent (0-D) growth was proposed to explain the formation of lateral nanostructures, and this formation aspect was ascribed to the alternate 1-D and 0-D growth. Preparing the needed growth factor, the In{sub 2}O{sub 3} nanocrystal chains extended to several micrometers. The growth mechanism analysis was useful to realize the relation between the kinetics factors and the complex nanostructure. The morphology and size of nanocrystals intensively were changed by oxygen concentration and led to interesting photoluminescence property. (orig.)

  6. Epitaxial growth of Si1−xGex alloys and Ge on Si(100) by electron-cyclotron-resonance Ar plasma chemical vapor deposition without substrate heating

    International Nuclear Information System (INIS)

    Ueno, Naofumi; Sakuraba, Masao; Murota, Junichi; Sato, Shigeo

    2014-01-01

    By using electron-cyclotron-resonance (ECR) Ar-plasma chemical vapor deposition (CVD) without substrate heating, the epitaxial growth process of Si 1−x Ge x alloy and Ge films deposited directly on dilute-HF-treated Si(100) was investigated. From the reflection high energy electron diffraction patterns of the deposited Si 1−x Ge x alloy (x = 0.50, 0.75) and Ge films on Si(100), it is confirmed that epitaxial growth can be realized without substrate heating, and that crystallinity degradation at larger film thickness is observed. The X-ray diffraction peak of the epitaxial films reveals the existence of large compressive strain, which is induced by lattice matching with the Si(100) substrate at smaller film thicknesses, as well as strain relaxation behavior at larger film thicknesses. The Ge fraction of Si 1−x Ge x thin film is in good agreement with the normalized GeH 4 partial pressure. The Si 1−x Ge x deposition rate increases with an increase of GeH 4 partial pressure. The GeH 4 partial pressure dependence of partial deposition rates [(Si or Ge fraction) × (Si 1−x Ge x thickness) / (deposition time)] shows that the Si partial deposition rate is slightly enhanced by the existence of Ge. From these results, it is proposed that the ECR-plasma CVD process can be utilized for Ge fraction control in highly-strained heterostructure formation of group IV semiconductors. - Highlights: • Si 1−x Ge x alloy and Ge were epitaxially grown on Si(100) without substrate heating. • Large strain and its relaxation behavior can be observed by X-ray diffraction. • Ge fraction of Si 1−x Ge x is equal to normalized GeH 4 partial pressure. • Si partial deposition rate is slightly enhanced by existence of Ge

  7. Anaerobic digestion characteristics of pig manures depending on various growth stages and initial substrate concentrations in a scaled pig farm in Southern China.

    Science.gov (United States)

    Zhang, Wanqin; Lang, Qianqian; Wu, Shubiao; Li, Wei; Bah, Hamidou; Dong, Renjie

    2014-03-01

    The characteristics of anaerobic digestion of pig manure from different growth stages were investigated. According to growth stage, batch experiments were performed using gestating sow manure (GSM), swine nursery with post-weaned piglet manure (SNM), growing fattening manure (GFM) and mixed manure (MM) as substrates at four substrate concentrations (40, 50, 65 and 80gVS/L) under mesophilic conditions. The maximum methane yields of MM, SNM, GSM and GFM were 354.7, 328.7, 282.4 and 263.5mLCH4/gVSadded, respectively. Volatile fatty acids/total inorganic carbon (VFA/TIC) ratio increased from 0.10 to 0.89 when loading increased from 40 to 80gVS/L for GFM. The modified Gompertz model shows a better fit to the experimental results than the first order model with a lower difference between measured and predicted methane yields. The kinetic parameters indicated that the methane production curve on the basis of differences in biodegradability of the pig manure at different growth stages. Copyright © 2014 Elsevier Ltd. All rights reserved.

  8. Growth of gallium nitride based devices on silicon(001) substrates by metalorganic vapor phase epitaxy; Wachstum von Galliumnitrid-basierten Bauelementen auf Silizium(001)-Substraten mittels metallorganischer Gasphasenepitaxie

    Energy Technology Data Exchange (ETDEWEB)

    Reiher, Fabian

    2009-02-25

    The main topic of this thesis is to investigate GaN-based layer systems grown by metalorganic vapor phase epitaxy on Si(001) substrates. A temperature shift up to 45 K is measured for a complete device structure on a 2-inch silicon substrate. By using a 40 nm thin LT-AlN-seed layer (680 C), the GaN crystallites on Si(001) substrates are almost oriented with their GaN(10 anti 12)-planes parallel to the Si(001)-plane. A four-fold azimuthal symmetry occurs for these layers, with the GaN[10 anti 11]-direction is aligned parallel to one of the four equivalent left angle 110 right angle -directions, respectively. However, a mono-crystalline and fully coalesced GaN-layer with this crystallographic orientation could not yet been obtained. If a deposition temperature of more than 1100 C is used for the AlN-seed layer, solely the GaN[0001]- growth direction of crystallites occurs in the main GaN layer on Si(001) substrates. These c-axis oriented GaN columns feature two opposite azimuthal alignments that are rotated by 90 with respect to each other and with GaN[11 anti 20] parallel Si[110] and GaN[10 anti 10] parallel Si[110], respectively. By using 4 off-oriented substrates towards the Si[110]-direction, one certain azimuthal texture component can be selected. The critical value of the miscut angle corresponds to theoretical calculations predicting the occurrence of atomic double steps on the Si(001) surface. The achieved crystallographic quality of the GaN layers on Si(001) is characterized by having a tilt of FWHM=0.27 and a twist of FWHM=0.8 of the crystallites, determined by X-ray diffraction. A completely crack-free, up to 2.5 {mu}m thick, and mono-crystalline GaN-template can be realized on Si(001), integrating 4 or 5 LT-AlN-interlayers in the GaN buffer structure. Based on this structure, the first successful implementation of an (InGaN/GaN)-LED on Si(001) is achieved. Furthermore, the possible fabrication of GaN-based FET-structures is demonstrated with a fully

  9. A simple technique for direct growth of Au into a nanoporous alumina layer on conductive glass as a reusable SERS substrate

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Jiajie [Chemicobiology and Functional Materials Institute, Nanjing University of Science and Technology, Nanjing 210094 (China); Shen, Muzhong [School of Engineering, AnHui Agricultural University, Hefei 230036 (China); Liu, Siyu; Li, Feng [Chemicobiology and Functional Materials Institute, Nanjing University of Science and Technology, Nanjing 210094 (China); Sun, Dongping, E-mail: sundpe301@163.com [School of Engineering, AnHui Agricultural University, Hefei 230036 (China); Wang, Tianhe, E-mail: thwang56@126.com [Chemicobiology and Functional Materials Institute, Nanjing University of Science and Technology, Nanjing 210094 (China)

    2017-06-01

    Graphical abstract: A simple technique for direct growth of gold nanoparticles (GNPs) into a nanostructured porous alumina layer on conductive glass slide (PAOCG). Gold was uniformly distributed in porous alumina layer. Au/PAOCG can serve as a portable, durable and reusable SERS substrate. - Highlights: • A simple method of producing nanoporous alumina layer on conductive glasses. • A facile technique for direct growth of gold nanoparticles (GNPs) into PAOCG. • It presents a general protocol for preparation of (MNPs) on conductive glasses. • Au/PAOCG exhibits high SERS sensitivity and excellent reusability. - Abstract: In this paper, we describe a simple technique for direct growth of gold nanoparticles (GNPs) into a nanostructured porous alumina layer on conductive glass slide (PAOCG). PAOCG was attached firmly with a small piece of steel and was then immersed in a HAuCl{sub 4} solution. Electro-induced electrons from steel were employed to reduce AuCl{sub 4}{sup −} on PAOCG. The galvanic replacement reaction (GRR) was adopted as the fundamental mechanism for reducing metal precursors. This mechanism was further studied by open circuit potential-time (OCP-t) experiment and the result demonstrated that steel induced the continuous proceeding of this reaction. This strategy presents a simple and general protocol for preparation of metal nanoparticles (MNPs) on conductive glass substrates. The SERS properties of Au/PAOCG were investigated using aqueous crystal violet (CV) and 4-mercaptopyridine (4-Mpy) as probe molecules. Au/PAOCG allowed as low as 10{sup −9} M CV and 10{sup −8} M 4-Mpy to be detected. The reusability of this substrate was achieved by measuring the SERS spectrum of the probe molecules followed with a 400 °C heat treatment for 10 min to remove the residuals. This substrate could be reused for at least ten cycles without any significantly reduced SERS performance. Therefore, this surface can serve as a portable, durable and reusable SERS

  10. Growth of Ca{sub 2}MnO{sub 4} Ruddlesden-Popper structured thin films using combinatorial substrate epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Lacotte, M.; David, A.; Pravarthana, D.; Prellier, W., E-mail: wilfrid.prellier@ensicaen.fr [Laboratoire CRISMAT, CNRS UMR 6508, ENSICAEN, Université de Basse-Normandie, 6 Bd Maréchal Juin, F-14050 Caen Cedex 4 (France); Grygiel, C. [Laboratoire CIMAP, CEA, CNRS UMR 6252, ENSICAEN, Université de Basse-Normandie, 6 Bd Maréchal Juin, F-14050 Caen Cedex 4 (France); Rohrer, G. S.; Salvador, P. A. [Department of Materials Science and Engineering, Carnegie Mellon University, 5000 Forbes Ave., Pittsburgh, Pennsylvania 15213 (United States); Velazquez, M. [CNRS, Université de Bordeaux, ICMCB, UPR 9048, F-33600 Pessac (France); Kloe, R. de [AMETEK B.V, EDAX Application Laboratory, Tilburg (Netherlands)

    2014-12-28

    The local epitaxial growth of pulsed laser deposited Ca{sub 2}MnO{sub 4} films on polycrystalline spark plasma sintered Sr{sub 2}TiO{sub 4} substrates was investigated to determine phase formation and preferred epitaxial orientation relationships (ORs) for isostructural Ruddlesden-Popper (RP) heteroepitaxy, further developing the high-throughput synthetic approach called Combinatorial Substrate Epitaxy (CSE). Both grazing incidence X-ray diffraction and electron backscatter diffraction patterns of the film and substrate were indexable as single-phase RP-structured compounds. The optimal growth temperature (between 650 °C and 800 °C) was found to be 750 °C using the maximum value of the average image quality of the backscattered diffraction patterns. Films grew in a grain-over-grain pattern such that each Ca{sub 2}MnO{sub 4} grain had a single OR with the Sr{sub 2}TiO{sub 4} grain on which it grew. Three primary ORs described 47 out of 49 grain pairs that covered nearly all of RP orientation space. The first OR, found for 20 of the 49, was the expected RP unit-cell over RP unit-cell OR, expressed as [100][001]{sub film}||[100][001]{sub sub}. The other two ORs were essentially rotated from the first by 90°, with one (observed for 17 of 49 pairs) being rotated about the [100] and the other (observed for 10 of 49 pairs) being rotated about the [110] (and not exactly by 90°). These results indicate that only a small number of ORs are needed to describe isostructural RP heteroepitaxy and further demonstrate the potential of CSE in the design and growth of a wide range of complex functional oxides.

  11. Growth and nutritional status of Brazilian wood species Cedrella fissilis and Anadenanthera peregrina in bauxite spoil in response to arbuscular mycorrhizal inoculation and substrate amendment

    Directory of Open Access Journals (Sweden)

    Tótola Marcos Rogério

    2000-01-01

    Full Text Available The growth of Cedrella fissilis Vell. (Cedro Rosa and of Anadenanthera peregrina Benth (Angico Vermelho in bauxite spoil was studied to evaluate their response to substrate amendment or to inoculation with arbuscular mycorrhizal fungi (AMF. The plants were grown in bauxite spoil, topsoil or spoil amended with either topsoil or compost, and inoculated with the AMF Acaulospora scrobiculata, Gigaspora margarita or Glomus etunicatum. Root colonization was highly dependent on the interaction plant-fungus-substrate. In C. fissilis, root colonization by Gigaspora margarita dropped from 75% in bauxite spoil to only 4% in topsoil. Contrarily, root colonization of A. peregrina by the same fungus increased from 48% in spoil to 60% in topsoil. Root colonization of C. fissilis in topsoil was lower than in the three other substrates. The opposite was observed for A. peregrina. Inoculation of the plants with Acaulospora scrobiculata or Glomus etunicatum was very effective in promoting plant growth. Plants of both C. fissilis and A. peregrina did not respond to amendments of bauxite spoil unless they were mycorrhizal. Also, a preferential partitioning of photosynthates to the shoots of A. peregrina inoculated with G. etunicatum or A. scrobiculata, and of C. fissilis inoculated with any of the three species of AMF was observed. C. fissilis showed a greater response to mycorrhizal inoculation than A. peregrina. The mean mycorrhizal efficiency (ME for dry matter production by C. fissilis was 1,847% for A. scrobiculata, 1,922% for G. etunicatum, and 119% for G. margarita. In A. peregrina, the ME was 249% for A. scrobiculata, 540% for G. etunicatum, and 50% for G. margarita. The effect of mycorrhizal inoculation on plant growth seems to be related in part to an enhanced phosphorus absorption by inoculated plants. Moreover, the efficiency with which the absorbed nutrients were used to produce plant biomass was much greater in plants inoculated with A. scrobiculata or

  12. Decomposition of Organic Substrates and their Effect on Mungbean Growth in Two Soils of the Mekong Delta

    Directory of Open Access Journals (Sweden)

    Mathias Becker

    2008-04-01

    Full Text Available Agricultural land use in the Mekong Delta of Vietnam is dominated by intensive irrigated rice cropping systems on both alluvial and acid sulfate soils. A stagnating and occasionally declining productivity may be linked on the alluvial soils to low N use efficiency and low soil organic matter content while on acid sulfate soils to acidity, Al toxicity and P deficiency. For economic reasons, farmers increasingly diversify their cropping system by replacing the dry season rice by high-value horticultural crops grown under upland conditions. However, upland cropping is likely to further exacerbate the soil-related problems. Organic substrates from decentralized waste and waste water management are widely available and may help to alleviate the reported soil problems. During the dry season of 2003/2004, the effect of the application of various types and rates of locally available waste products on crop performance was evaluated at both an alluvial and an acid sulfate soil site. The C and N mineralization dynamics of nine organic substrates from waste and waste water treatment were determined by anaerobic (N and aerobic (C incubation in the laboratory. The response of 12 week-old mungbean (dry matter accumulation to substrate application (1.5 – 6.0 Mg ha−1 was evaluated on a degraded alluvial and on an acid sulfate soil. In the alluvial soil, largest mineralization rates were observed from anaerobic sludge. Biomass increases in 12 week-old mungbean ranged from 25-98% above the unfertilized control. In the acid sulfate soil, highest net-N release rates were observed from aerobic composts with high P content. Mungbean biomass was related to soil pH and exchangeable Al3+ and was highest with the application of aerobic composts. We conclude that the use of organic substrates in the rice-based systems of the Mekong Delta needs to be soil specific.

  13. Direct Growth of Graphene Films on 3D Grating Structural Quartz Substrates for High-Performance Pressure-Sensitive Sensors.

    Science.gov (United States)

    Song, Xuefen; Sun, Tai; Yang, Jun; Yu, Leyong; Wei, Dacheng; Fang, Liang; Lu, Bin; Du, Chunlei; Wei, Dapeng

    2016-07-06

    Conformal graphene films have directly been synthesized on the surface of grating microstructured quartz substrates by a simple chemical vapor deposition process. The wonderful conformality and relatively high quality of the as-prepared graphene on the three-dimensional substrate have been verified by scanning electron microscopy and Raman spectra. This conformal graphene film possesses excellent electrical and optical properties with a sheet resistance of 80% (at 550 nm), which can be attached with a flat graphene film on a poly(dimethylsiloxane) substrate, and then could work as a pressure-sensitive sensor. This device possesses a high-pressure sensitivity of -6.524 kPa(-1) in a low-pressure range of 0-200 Pa. Meanwhile, this pressure-sensitive sensor exhibits super-reliability (≥5000 cycles) and an ultrafast response time (≤4 ms). Owing to these features, this pressure-sensitive sensor based on 3D conformal graphene is adequately introduced to test wind pressure, expressing higher accuracy and a lower background noise level than a market anemometer.

  14. Distinctions of the growth and structural-spectroscopic investigations of thin AlN films grown on the GaAs substrates

    Science.gov (United States)

    Seredin, P. V.; Kashkarov, V. M.; Arsentyev, I. N.; Bondarev, A. D.; Tarasov, I. S.

    2016-08-01

    Using X-ray diffraction analysis, atomic force microscopy, IR and UV spectroscopy, the properties of thin aluminium nitride films (4.0 for the wavelength band around 250 nm and an optical band-gap of 5 eV. It was shown that the morphology, surface composition and optical functional characteristics of AlN/GaAs heterophase systems can be controlled owing to the use of misoriented GaAs substrates as well choice of the technological parameters used for the film growth.

  15. Vinegar residue compost as a growth substrate enhances cucumber resistance against the Fusarium wilt pathogen Fusarium oxysporum by regulating physiological and biochemical responses.

    Science.gov (United States)

    Shi, Lu; Du, Nanshan; Yuan, Yinghui; Shu, Sheng; Sun, Jin; Guo, Shirong

    2016-09-01

    Fusarium wilt caused by the fungus Fusarium oxysporum f. sp. cucumerinum (FOC) is the most severe soil-borne disease attacking cucumber. To assess the positive effects of vinegar residue substrate (VRS) on the growth and incidence of Fusarium wilt on cucumber, we determined the cucumber growth parameters, disease severity, defense-related enzyme and pathogenesis-related (PR) protein activities, and stress-related gene expression levels. In in vitro and pot experiments, we demonstrated the following results: (i) the VRS extract exhibited a higher biocontrol activity than that of peat against FOC, and significantly improved the growth inhibition of FOC, with values of 48.3 %; (ii) in response to a FOC challenge, antioxidant enzymes and the key enzymes of phenylpropanoid metabolic activities, as well as the PR protein activities in the roots of cucumber, were significantly increased. Moreover, the activities of these proteins were higher in VRS than in peat; (iii) the expression levels of stress-related genes (including glu, pal, and ethylene receptor) elicited responses to the pathogens inoculated in cucumber leaves; and (iv) the FOC treatment significantly inhibited the growth of cucumber seedlings. Moreover, all of the growth indices of plants grown in VRS were significantly higher than those grown in peat. These results offer a new strategy to control cucumber Fusarium wilt, by upregulating the activity levels of defense-related enzymes and PR proteins and adjusting gene expression levels. They also provide a theoretical basis for VRS applications.

  16. Role of low O 2 pressure and growth temperature on electrical transport of PLD grown ZnO thin films on Si substrates

    Science.gov (United States)

    Pandis, Ch.; Brilis, N.; Tsamakis, D.; Ali, H. A.; Krishnamoorthy, S.; Iliadis, A. A.

    2006-06-01

    Undoped ZnO thin films have been grown on (100) Si substrates by pulsed laser deposition. The effect of growth parameters such as temperature, O 2 partial pressure and laser fluence on the structural and electrical properties of the films has been investigated. It is shown that the well-known native n-type conductivity, attributed to the activation of hydrogenic donor states, exhibits a conversion from n-type to p-type when the O 2 partial pressure is reduced from 10 -4 to 10 -7 Torr at growth temperatures lower than 400 °C. The p-type conductivity could be attributed to the dominant role of the acceptor Zn vacancies for ZnO films grown at very low O 2 pressures.

  17. RHEED and EELS study of Pd/Al bimetallic thin film growth on different α-Al 2O 3 substrates

    Science.gov (United States)

    Moroz, V.; Rajs, K.; Mašek, K.

    2002-06-01

    Pd/Al bimetallic thin films were grown by molecular beam epitaxy on single-crystalline α-Al 2O 3(0 0 0 1) and (1 1 2¯ 0) surfaces. Substrate and deposit crystallographic structures and evolution of deposit lattice parameter during the growth were studied by reflection high-energy electron diffraction. The electron energy loss spectroscopy was used as an auxiliary method for chemical analysis. The bimetallic films were prepared by successive deposition of both Pd and Al metals. The structure of Pd and Al deposits in early stages of the growth and its dependence on the preparation conditions were studied. Two phases of Pd clusters covered by Al overlayer have been found. The formation of Al overlayer strongly influenced the lattice parameter of Pd clusters.

  18. Effect of strain, substrate surface and growth rate on B-doping in selectively grown SiGe layers

    International Nuclear Information System (INIS)

    Ghandi, R.; Kolahdouz, M.; Hallstedt, J.; Wise, R.; Wejtmans, Hans; Radamson, H.H.

    2008-01-01

    In this work, the role of strain and growth rate on boron incorporation in selective epitaxial growth (SEG) of B-doped Si 1-x Ge x (x = 0.15-0.25) layers in recessed or unprocessed (elevated) openings for source/drain applications in CMOS has been studied. A focus has been made on the strain distribution and B incorporation in SEG of SiGe layers

  19. Effect of strain, substrate surface and growth rate on B-doping in selectively grown SiGe layers

    Energy Technology Data Exchange (ETDEWEB)

    Ghandi, R. [School of Information and Communication Technology, KTH (Royal Institute of Technology), Isafjordsg. 22-26, Electrum 229, 16640 Kista (Sweden)], E-mail: ghandi@kth.se; Kolahdouz, M.; Hallstedt, J. [School of Information and Communication Technology, KTH (Royal Institute of Technology), Isafjordsg. 22-26, Electrum 229, 16640 Kista (Sweden); Wise, R.; Wejtmans, Hans [Texas Instrument, 13121 TI Boulevard, Dallas, Tx 75243 (United States); Radamson, H.H. [School of Information and Communication Technology, KTH (Royal Institute of Technology), Isafjordsg. 22-26, Electrum 229, 16640 Kista (Sweden)

    2008-11-03

    In this work, the role of strain and growth rate on boron incorporation in selective epitaxial growth (SEG) of B-doped Si{sub 1-x}Ge{sub x} (x = 0.15-0.25) layers in recessed or unprocessed (elevated) openings for source/drain applications in CMOS has been studied. A focus has been made on the strain distribution and B incorporation in SEG of SiGe layers.

  20. Effects of Various Substrates and Foliar Application of Humic Acid ‎on Growth and some Qualitative and Quantitative Characteristics of Tomato (Lycopersicon esculentum Seedling

    Directory of Open Access Journals (Sweden)

    Nasibeh Pourghasemian

    2018-03-01

    Full Text Available Introduction: Successful greenhouse and nursery production of plants is largely dependent on the chemical and physical properties of the growing substrate. An ideal potting substrate should be free of weeds and diseases, heavy enough to avoid frequent tipping over and yet light enough to facilitate handling and shipping. The substrate should also be well drained and yet retain sufficient water to reduce the frequency of watering. Other parameters to consider include cost, availability, consistency between batches and stability in the media over time. Greenhouse crops in general, have higher nutrient demands than field grown crops. Therefore, in order to optimize production it is essential to focus on the growing substrate and fertilization. The physical properties of the growing medium are important parameters for successful plant growth, as these are related to the ability to adequately store and supply air and water to plants. Humic acid is a principal component of humic substances, which are the major organic constituents of soil (humus, peat and coal. It is also a major organic constituent of many upland streams, dystrophic lakes, and ocean water. It is produced by biodegradation of dead organic matter. It is not a single acid, but it is a complex mixture of many different acids containing carboxyl and phenolate groups so that the mixture behaves functionally as a dibasic acid or occasionally as a tribasic acid. Humic acids can form complexes with ions that are commonly found in the environment creating humic colloids. Humic and fulvic acids (fulvic acids are humic acids with lower molecular weight and higher oxygen content than other humic acids are commonly used as a soil supplement in agriculture. Humic Plus contains humic acid, fulvic acid, macro micro nutrients and proprietary constituents essential for plant growth. Organic matter soil amendments have been known by farmers to be beneficial to plant growth for longer than recorded

  1. Room-temperature epitaxial growth of high-quality m-plane InGaN films on ZnO substrates

    Energy Technology Data Exchange (ETDEWEB)

    Shimomoto, Kazuma; Ueno, Kohei [Institute of Industrial Science, University of Tokyo (Japan); Kobayashi, Atsushi [Institute of Industrial Science, University of Tokyo (Japan); Kanagawa Academy of Science and Technology (KAST), Takatsu-ku, Kawasaki (Japan); Department of Applied Chemistry, University of Tokyo (Japan); Ohta, Jitsuo [Institute of Industrial Science, University of Tokyo (Japan); Kanagawa Academy of Science and Technology (KAST), Takatsu-ku, Kawasaki (Japan); Oshima, Masaharu [Department of Applied Chemistry, University of Tokyo (Japan); Core Research for Evolutional Science and Technology, Japan Science and Technology Corporation (JST-CREST), Tokyo (Japan); Fujioka, Hiroshi [Institute of Industrial Science, University of Tokyo (Japan); Kanagawa Academy of Science and Technology (KAST), Takatsu-ku, Kawasaki (Japan); Core Research for Evolutional Science and Technology, Japan Science and Technology Corporation (JST-CREST), Tokyo (Japan); Amanai, Hidetaka; Nagao, Satoru; Horie, Hideyoshi [Mitsubishi Chemical Group, Science and Technology Research Center, Higashi-Mamiana, Ushiku-shi, Ibaraki (Japan)

    2009-05-15

    The authors have grown high-quality m -plane In{sub 0.36}Ga{sub 0.64}N (1 anti 100) films on ZnO (1 anti 100) substrates at room temperature (RT) by pulsed laser deposition (PLD) and have investigated their structural properties. m-plane InGaN films grown on ZnO substrates at RT possess atomically flat surfaces with stepped and terraced structures, indicating that the film growth proceeds in a two-dimensional mode. X-ray diffraction measurements have revealed that the m-plane InGaN films grow without phase separation reactions at RT. The full-width at half-maximum values of the 1 anti 100 X-ray rocking curves of films with X-ray incident azimuths perpendicular to the c- and a-axis are 88 arcsec and 78 arcsec, respectively. Reciprocal space-mapping has revealed that a 50 nm thick m-plane In{sub 0.36}Ga{sub 0.64}N film grows coherently on the ZnO substrate, which can probably explain the low defect density that is observed in the film. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  2. Room-temperature epitaxial growth of high-quality m-plane InGaN films on ZnO substrates

    International Nuclear Information System (INIS)

    Shimomoto, Kazuma; Ueno, Kohei; Kobayashi, Atsushi; Ohta, Jitsuo; Oshima, Masaharu; Fujioka, Hiroshi; Amanai, Hidetaka; Nagao, Satoru; Horie, Hideyoshi

    2009-01-01

    The authors have grown high-quality m -plane In 0.36 Ga 0.64 N (1 anti 100) films on ZnO (1 anti 100) substrates at room temperature (RT) by pulsed laser deposition (PLD) and have investigated their structural properties. m-plane InGaN films grown on ZnO substrates at RT possess atomically flat surfaces with stepped and terraced structures, indicating that the film growth proceeds in a two-dimensional mode. X-ray diffraction measurements have revealed that the m-plane InGaN films grow without phase separation reactions at RT. The full-width at half-maximum values of the 1 anti 100 X-ray rocking curves of films with X-ray incident azimuths perpendicular to the c- and a-axis are 88 arcsec and 78 arcsec, respectively. Reciprocal space-mapping has revealed that a 50 nm thick m-plane In 0.36 Ga 0.64 N film grows coherently on the ZnO substrate, which can probably explain the low defect density that is observed in the film. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  3. Synthesis of high quality graphene on capped (1 1 1) Cu thin films obtained by high temperature secondary grain growth on c-plane sapphire substrates

    Science.gov (United States)

    Kim, Youngwoo; Moyen, Eric; Yi, Hemian; Avila, José; Chen, Chaoyu; Asensio, Maria C.; Lee, Young Hee; Pribat, Didier

    2018-07-01

    We propose a novel growth technique, in which graphene is synthesized on capped Cu thin films deposited on c-plane sapphire. The cap is another sapphire plate which is just laid upon the Cu thin film, in direct contact with it. Thanks to this ‘contact cap’, Cu evaporation can be suppressed at high temperature and the 400 nm-thick Cu films can be annealed above 1000 °C, resulting in (1 1 1)-oriented grains of millimeter size. Following this high temperature annealing, graphene is grown by chemical vapor deposition during the same pump-down operation, without removing the contact cap. The orientation and doping type of the as-grown graphene were first studied, using low energy electron diffraction, as well as high resolution angle-resolved photoemission spectroscopy. In particular, the orientation relationships between the graphene and copper thin film with respect to the sapphire substrate were precisely determined. We find that the graphene sheets exhibit a minimal rotational disorder, with ~90% of the grains aligned along the copper high symmetry direction. Detailed transport measurements were also performed using field-effect transistor structures. Carrier mobility values as high as 8460 cm2 V‑1 s‑1 have been measured on top gate transistors fabricated directly on the sapphire substrate, by etching the Cu film from underneath the graphene sheets. This is by far the best carrier mobility value obtained to date for graphene sheets synthesized on a thin film-type metal substrate.

  4. Facile Five-Step Heteroepitaxial Growth of GaAs Nanowires on Silicon Substrates and the Twin Formation Mechanism.

    Science.gov (United States)

    Yao, Maoqing; Sheng, Chunyang; Ge, Mingyuan; Chi, Chun-Yung; Cong, Sen; Nakano, Aiichiro; Dapkus, P Daniel; Zhou, Chongwu

    2016-02-23

    Monolithic integration of III-V semiconductors with Si has been pursued for some time in the semiconductor industry. However, the mismatch of lattice constants and thermal expansion coefficients represents a large technological challenge for the heteroepitaxial growth. Nanowires, due to their small lateral dimension, can relieve strain and mitigate dislocation formation to allow single-crystal III-V materials to be grown on Si. Here, we report a facile five-step heteroepitaxial growth of GaAs nanowires on Si using selective area growth (SAG) in metalorganic chemical vapor deposition, and we further report an in-depth study on the twin formation mechanism. Rotational twin defects were observed in the nanowire structures and showed strong dependence on the growth condition and nanowire size. We adopt a model of faceted growth to demonstrate the formation of twins during growth, which is well supported by both a transmission electron microscopy study and simulation based on nucleation energetics. Our study has led to twin-free segments in the length up to 80 nm, a significant improvement compared to previous work using SAG. The achievements may open up opportunities for future functional III-V-on-Si heterostructure devices.

  5. Direct growth of vertically aligned carbon nanotubes on silicon substrate by spray pyrolysis of Glycine max oil

    Directory of Open Access Journals (Sweden)

    K. T. Karthikeyan

    2017-11-01

    Full Text Available Vertically aligned carbon nanotubes have been synthesized by spray pyrolysis from Glycine max oil on silicon substrate using ferrocene as catalyst at 650 °C. Glycine max oil, a plant-based hydrocarbon precursor was used as a source of carbon and argon as a carrier gas. The as-grown vertically aligned carbon nanotubes were characterized by scanning electron microscopy, high-resolution transmission electron microscopy, X-ray diffraction, thermogravimetric analysis, and Raman spectroscopy. Scanning electron microscopic images reveal that the dense bundles of aligned carbon nanotubes. High resolution transmission electron microscopy and Raman spectroscopy observations indicate that as-grown aligned carbon nanotubes are well graphitized.

  6. Low Temperature (180°C Growth of Smooth Surface Germanium Epilayers on Silicon Substrates Using Electron Cyclotron Resonance Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    Teng-Hsiang Chang

    2014-01-01

    Full Text Available This paper describes a new method to grow thin germanium (Ge epilayers (40 nm on c-Si substrates at a low growth temperature of 180°C using electron cyclotron resonance chemical vapor deposition (ECR-CVD process. The full width at half maximum (FWHM of the Ge (004 in X-ray diffraction pattern and the compressive stain in a Ge epilayer of 683 arcsec and 0.12% can be achieved. Moreover, the Ge/Si interface is observed by transmission electron microscopy to demonstrate the epitaxial growth of Ge on Si and the surface roughness is 0.342 nm. The thin-thickness and smooth surface of Ge epilayer grown on Si in this study is suitable to be a virtual substrate for developing the low cost and high efficiency III-V/Si tandem solar cells in our opinion. Furthermore, the low temperature process can not only decrease costs but can also reduce the restriction of high temperature processes on device manufacturing.

  7. Nanosheet controlled epitaxial growth of PbZr0.52Ti0.48O3 thin films on glass substrates

    Science.gov (United States)

    Bayraktar, M.; Chopra, A.; Bijkerk, F.; Rijnders, G.

    2014-09-01

    Integration of PbZr0.52Ti0.48O3 (PZT) films on glass substrates is of high importance for device applications. However, to make use of the superior ferro- and piezoelectric properties of PZT, well-oriented crystalline or epitaxial growth with control of the crystal orientation is a prerequisite. In this article, we report on epitaxial growth of PZT films with (100)- and (110)-orientation achieved by utilizing Ca2Nb3O10 (CNO) and Ti0.87O2 (TO) nanosheets as crystalline buffer layers. Fatigue measurements demonstrated stable ferroelectric properties of these films up to 5 × 109 cycles. (100)-oriented PZT films on CNO nanosheets show a large remnant polarization of 21 μC/cm2 that is the highest remnant polarization value compared to (110)-oriented and polycrystalline films reported in this work. A piezoelectric response of 98 pm/V is observed for (100)-oriented PZT film which is higher than the values reported in the literature on Si substrates.

  8. Epitaxial growth of bcc-FexCo100-x thin films on MgO(1 1 0) single-crystal substrates

    International Nuclear Information System (INIS)

    Ohtake, Mitsuru; Nishiyama, Tsutomu; Shikada, Kouhei; Kirino, Fumiyoshi; Futamoto, Masaaki

    2010-01-01

    Fe x Co 100-x (x=100, 65, 50 at%) epitaxial thin films were prepared on MgO(1 1 0) single-crystal substrates heated at 300 deg. C by ultra-high vacuum molecular beam epitaxy. The film structure and the growth mechanism are discussed. FeCo(2 1 1) films with bcc structure grow epitaxially on MgO(1 1 0) substrates with two types of variants whose orientations are rotated around the film normal by 180 deg. each other for all compositions. Fe x Co 100-x film growth follows the Volmer Weber mode. X-ray diffraction analysis indicates the out-of-plane and the in-plane lattice spacings are in agreement with the values of respective bulk Fe x Co 100-x crystals with very small errors less than ±0.4%, suggesting the strains in the films are very small. High-resolution cross-sectional transmission electron microscopy shows that periodical misfit dislocations are preferentially introduced in the film at the Fe 50 Co 50 /MgO interface along the MgO[1 1-bar 0] direction. The presence of such periodical dislocations decreases the large lattice mismatch of about -17% existing at the FeCo/MgO interface along the MgO[1 1-bar 0] direction.

  9. Epitaxial growth of bcc-Fe{sub x}Co{sub 100-x} thin films on MgO(1 1 0) single-crystal substrates

    Energy Technology Data Exchange (ETDEWEB)

    Ohtake, Mitsuru, E-mail: ohtake@futamoto.elect.chuo-u.ac.j [Faculty of Science and Engineering, Chuo University, 1-13-27 Kasuga, Bunkyo-ku, Tokyo 112-8551 (Japan); Nishiyama, Tsutomu; Shikada, Kouhei [Faculty of Science and Engineering, Chuo University, 1-13-27 Kasuga, Bunkyo-ku, Tokyo 112-8551 (Japan); Kirino, Fumiyoshi [Graduate School of Fine Arts, Tokyo National University of Fine Arts and Music, 12-8 Ueno-koen, Taito-ku, Tokyo 110-8714 (Japan); Futamoto, Masaaki [Faculty of Science and Engineering, Chuo University, 1-13-27 Kasuga, Bunkyo-ku, Tokyo 112-8551 (Japan)

    2010-07-15

    Fe{sub x}Co{sub 100-x} (x=100, 65, 50 at%) epitaxial thin films were prepared on MgO(1 1 0) single-crystal substrates heated at 300 deg. C by ultra-high vacuum molecular beam epitaxy. The film structure and the growth mechanism are discussed. FeCo(2 1 1) films with bcc structure grow epitaxially on MgO(1 1 0) substrates with two types of variants whose orientations are rotated around the film normal by 180 deg. each other for all compositions. Fe{sub x}Co{sub 100-x} film growth follows the Volmer Weber mode. X-ray diffraction analysis indicates the out-of-plane and the in-plane lattice spacings are in agreement with the values of respective bulk Fe{sub x}Co{sub 100-x} crystals with very small errors less than +-0.4%, suggesting the strains in the films are very small. High-resolution cross-sectional transmission electron microscopy shows that periodical misfit dislocations are preferentially introduced in the film at the Fe{sub 50}Co{sub 50}/MgO interface along the MgO[1 1-bar 0] direction. The presence of such periodical dislocations decreases the large lattice mismatch of about -17% existing at the FeCo/MgO interface along the MgO[1 1-bar 0] direction.

  10. Diffusion-controlled growth of molecular heterostructures: fabrication of two-, one-, and zero-dimensional C(60) nanostructures on pentacene substrates.

    Science.gov (United States)

    Breuer, Tobias; Witte, Gregor

    2013-10-09

    A variety of low dimensional C60 structures has been grown on supporting pentacene multilayers. By choice of substrate temperature during growth the effective diffusion length of evaporated fullerenes and their nucleation at terraces or step edges can be precisely controlled. AFM and SEM measurements show that this enables the fabrication of either 2D adlayers or solely 1D chains decorating substrate steps, while at elevated growth temperature continuous wetting of step edges is prohibited and instead the formation of separated C60 clusters pinned at the pentacene step edges occurs. Remarkably, all structures remain thermally stable at room temperature once they are formed. In addition the various fullerene structures have been overgrown by an additional pentacene capping layer. Utilizing the different probe depth of XRD and NEXAFS, we found that no contiguous pentacene film is formed on the 2D C60 structure, whereas an encapsulation of the 1D and 0D structures with uniformly upright oriented pentacene is achieved, hence allowing the fabrication of low dimensional buried organic heterostructures.

  11. Epitaxial growth of Sb-doped nonpolar a-plane ZnO thin films on r-plane sapphire substrates by RF magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Hou-Guang, E-mail: houguang@isu.edu.tw [Department of Materials Science and Engineering, I-Shou University, Kaohsiung 840, Taiwan (China); Hung, Sung-Po [Department of Materials Science and Engineering, I-Shou University, Kaohsiung 840, Taiwan (China)

    2014-02-15

    Highlights: ► Sb-doped nonpolar a-plane ZnO layers were epitaxially grown on sapphire substrates. ► Crystallinity and electrical properties were studied upon growth condition and doping concentration. ► The out-of-plane lattice spacing of ZnO films reduces monotonically with increasing Sb doping level. ► The p-type conductivity of ZnO:Sb film is closely correlated with annealing condition and Sb doping level. -- Abstract: In this study, the epitaxial growth of Sb-doped nonpolar a-plane (112{sup ¯}0) ZnO thin films on r-plane (11{sup ¯}02) sapphire substrates was performed by radio-frequency magnetron sputtering. The influence of the sputter deposition conditions and Sb doping concentration on the microstructural and electrical properties of Sb-doped ZnO epitaxial films was investigated using X-ray diffraction (XRD), scanning electron microscopy (SEM) and the Hall-effect measurement. The measurement of the XRD phi-scan indicated that the epitaxial relationship between the ZnO:Sb layer and sapphire substrate was (112{sup ¯}0){sub ZnO}//(11{sup ¯}02){sub Al{sub 2O{sub 3}}} and [11{sup ¯}00]{sub ZnO}//[112{sup ¯}0]{sub Al{sub 2O{sub 3}}}. The out-of-plane a-axis lattice parameter of ZnO films was reduced monotonically with the increasing Sb doping level. The cross-sectional transmission electron microscopy (XTEM) observation confirmed the absence of any significant antimony oxide phase segregation across the thickness of the Sb-doped ZnO epitaxial film. However, the epitaxial quality of the films deteriorated as the level of Sb dopant increased. The electrical properties of ZnO:Sb film are closely correlated with post-annealing conditions and Sb doping concentrations.

  12. Growth of CdS thin films on indium coated glass substrates via chemical bath deposition and subsequent air annealing

    Energy Technology Data Exchange (ETDEWEB)

    Ghosh, Biswajit; Kumar, Kamlesh; Singh, Balwant Kr; Banerjee, Pushan; Das, Subrata, E-mail: neillohit@yahoo.co.in

    2014-11-30

    Graphical abstract: - Highlights: • CdS film grown on indium coated glass substrates via CBD and subsequent annealing. • Disappearance of the indium (1 1 2) peak confirms interdiffusion at 300 °C. • SIMS indicates the subsequent interdiffusion at progressively higher temperature. • Composite In–CdS layer showed lower photosensitivity compared to pure CdS. - Abstract: In the present work attempts were made to synthesize indium doped CdS films by fabricating In/CdS bilayers using CBD-CdS on vacuum evaporated In thin films and subsequent air annealing. 135 nm CdS films were grown onto 20 nm and 35 nm indium coated glass substrate employing chemical bath deposition technique. The In/CdS bilayers thus formed were subjected to heat treatment at the temperatures between 200 and 400 °C for 4 min in the muffle furnace to facilitate indium to diffuse into the CdS films. XRD pattern ascertained no noticeable shift in lattice constant implying grain boundary metal segregation, while secondary ion mass spectrometry indicated the diffusion profile of indium into CdS matrices. Mass spectrometry results showed that substantial diffusion of indium had been taken place within CdS at 400 °C. Dark and photocurrent with different illumination time were measured to ascertain the photosensitivity of pure and composite CdS films.

  13. Growth and characterization of yttrium iron garnet films on Si substrates by Chemical Solution Deposition (CSD) technique

    Energy Technology Data Exchange (ETDEWEB)

    Guo, Xin; Chen, Ying; Wang, Genshui [Key Laboratory of Inorganic Function Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, University of Chinese Academy of Sciences, 1295 Dingxi Rd., Shanghai 200050 (China); Zhang, Yuanyuan [Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, 500 Dongchuan Rd., Shanghai 200241 (China); Ge, Jun [Key Laboratory of Inorganic Function Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, University of Chinese Academy of Sciences, 1295 Dingxi Rd., Shanghai 200050 (China); Tang, Xiaodong [Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, 500 Dongchuan Rd., Shanghai 200241 (China); Ponchel, Freddy; Rémiens, Denis [Institute of Electronics, Microelectronics and Nanotechnology (IEMN)–DOAE, UMR CNRS 8520, Université des Sciences et Technologies de Lille, 59652 Villeneuve d’Ascq Cedex (France); Dong, Xianlin, E-mail: xldong@mail.sic.ac.cn [Key Laboratory of Inorganic Function Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, University of Chinese Academy of Sciences, 1295 Dingxi Rd., Shanghai 200050 (China)

    2016-06-25

    Yttrium Iron Garnet (YIG) films were prepared on Si substrates by Chemical Solution Deposition (CSD) technique using acetic acid and deionized water as solvents. Well-crystallized and crack-free YIG films were obtained when annealed at 750 °C and 850 °C respectively, showing a low surface roughness of several nanometers. When annealed at 750 °C for 30 min, the saturated magnetization (Ms) and coercive field (Hc) of YIG films were 0.121 emu/mm{sup 3} (4πMs = 1.52 kGs) and 7 Oe respectively, which were similar to that prepared by PLD technique. The peak-to-peak linewidth of ferromagnetic resonance (FMR) was 220 Oe at 9.10 GHz. The results demonstrated that CSD was an excellent technique to prepare high quality yttrium iron garnet (YIG) films on silicon, which could provide a lower-cost way for large-scale production on Si-based integrated devices. - Highlights: • The preparation of YIG films by Chemical Solution Deposition are demonstrated. • Well-crystallized and crack-free YIG films can be obtained on Si substrate by CSD. • YIG films can be crystallized in 750 °C with good magnetic performances. • It's beneficial to large-scale production of YIG films on Si integrated devices.

  14. The growth of the metallic ZrNx thin films on P-GaN substrate by pulsed laser deposition

    Science.gov (United States)

    Gu, Chengyan; Sui, Zhanpeng; Li, Yuxiong; Chu, Haoyu; Ding, Sunan; Zhao, Yanfei; Jiang, Chunping

    2018-03-01

    Although metal nitride thin films have attractive prospects in plasmonic applications due to its stable properties in harsh environments containing high temperatures, shock, and contaminants, the effect of deposition parameters on the properties of the metallic ZrN grown on III-N semiconductors by pulse laser deposition still lacks of detailed exploration. Here we have successfully prepared metallic ZrNx films on p-GaN substrate by pulsed laser deposition in N2 ambient of various pressures at a fixed substrate temperature (475 °C). It is found that the films exhibit quite smooth surfaces and (111) preferred orientation. The X-ray photoelectron spectroscopy measurements indicate that carbon contamination can be completely removed and oxygen contamination is significantly reduced on the film surfaces after cleaning using Ar+ sputtering. The N/Zr ratio increases from 0.64 to 0.75 when the N2 pressure increases from 0.5 Pa to 3 Pa. The optical reflectivity spectra measured by the UV-vis-NIR spectrophotometer show that the ZrNx is a typical and good metallic-like material and its metallic properties can be tuned with changing the film compositions.

  15. A Functional Tricarboxylic Acid Cycle Operates during Growth of Bordetella pertussis on Amino Acid Mixtures as Sole Carbon Substrates.

    Directory of Open Access Journals (Sweden)

    Marie Izac

    Full Text Available It has been claimed that citrate synthase, aconitase and isocitrate dehydrogenase activities are non-functional in Bordetella pertussis and that this might explain why this bacterium's growth is sometimes associated with accumulation of polyhydroxybutyrate (PHB and/or free fatty acids. However, the sequenced genome includes the entire citric acid pathway genes. Furthermore, these genes were expressed and the corresponding enzyme activities detected at high levels for the pathway when grown on a defined medium imitating the amino acid content of complex media often used for growth of this pathogenic microorganism. In addition, no significant PHB or fatty acids could be detected. Analysis of the carbon balance and stoichiometric flux analysis based on specific rates of amino acid consumption, and estimated biomass requirements coherent with the observed growth rate, clearly indicate that a fully functional tricarboxylic acid cycle operates in contrast to previous reports.

  16. Molecular beam epitaxial growth of Bi2Te3 and Sb2Te3 topological insulators on GaAs (111 substrates: a potential route to fabricate topological insulator p-n junction

    Directory of Open Access Journals (Sweden)

    Zhaoquan Zeng

    2013-07-01

    Full Text Available High quality Bi2Te3 and Sb2Te3 topological insulators films were epitaxially grown on GaAs (111 substrate using solid source molecular beam epitaxy. Their growth and behavior on both vicinal and non-vicinal GaAs (111 substrates were investigated by reflection high-energy electron diffraction, atomic force microscopy, X-ray diffraction, and high resolution transmission electron microscopy. It is found that non-vicinal GaAs (111 substrate is better than a vicinal substrate to provide high quality Bi2Te3 and Sb2Te3 films. Hall and magnetoresistance measurements indicate that p type Sb2Te3 and n type Bi2Te3 topological insulator films can be directly grown on a GaAs (111 substrate, which may pave a way to fabricate topological insulator p-n junction on the same substrate, compatible with the fabrication process of present semiconductor optoelectronic devices.

  17. Effect of growth interruption on the crystalline quality and electrical properties of Ga-doped ZnO thin film deposited on quartz substrate by magnetron sputtering

    International Nuclear Information System (INIS)

    Lee, Geun-Hyoung

    2013-01-01

    Ga-doped ZnO(GZO) thin films were deposited on the quartz substrate by magnetron sputtering system with growth interruption technique. As the number of interruptions and interruption time increased, the carrier concentration and Hall mobility in GZO films significantly increased. As a result, the resistivity of GZO films decreased. The optical transmittance of GZO films also increased with the number of interruption and interruption time. The transmittance showed over 90% in visual region. Atomic force microscopy measurement showed that the film surface became smoother with an increase of the number of interruption. In addition, the crystalline quality and electrical properties of GZO films were more improved when the growth interruption was employed with a temperature gradient. - Highlights: • Ga-doped ZnO thin films were deposited with growth interruption technique. • The crystallinity of the films was improved with the number of interruptions. • The crystallinity of the films was improved as the interruption time increased. • The growth interruption with a temperature gradient more improved the film quality

  18. Short-term growth and substrate use in very-low-birth-weight infants fed formulas with different energy contents

    NARCIS (Netherlands)

    J.B. van Goudoever (Hans); E.J. Sulkers; H.N. Lafeber (Harrie); P.J.J. Sauer (Pieter)

    2000-01-01

    textabstractBACKGROUND: Currently available preterm formulas with energy contents of 3350 kJ (800 kcal)/L promote weight and length gain at rates at or above intrauterine growth rates but disproportionately increase total body fat. OBJECTIVE: The objective of this

  19. KINETICS OF GROWTH AND ETHANOL PRODUCTION ON DIFFERENT CARBON SUBSTRATES USING GENETICALLY ENGINEERED XYLOSE-FERMENTING YEAST

    Science.gov (United States)

    Saccharomyces cerevisiae 424A (LNH-ST) strain was used for fermentation of glucose and xylose. Growth kinetics and ethanol productivity were calculated for batch fermentation on media containing different combinations of glucose and xylose to give a final sugar concentra...

  20. Basis for slow growth on non-fermentable substrates by a saccharomyces cerevisiae mutant UV-sensitive for rho- production

    International Nuclear Information System (INIS)

    Crosby, B.; Colson, A.M.; Briquet, M.; Goffeau, A.; Moustacchi, E.

    1978-01-01

    The mutant uvsp 72 of Saccharomyces cerevisiae UV-sensitive for rho - production displays slower growth on media containing non-fermentable carbon sources such as glycerol or lactate. The slower growth on glycerol is not due to any deficiency in glycerol catabolism or mitochondrial oxidative phosphorylation. No modifications of the sensitivity to ethidium bromide of the mitochondrial ATPase activity could be detected. A mathematical model is presented which accounts for slower growth of uvsp 72 on the sole basis of the continuous and elevated rho - production in the mutant strain. This model, which estimates the rate of mutation from the rate of growth and vice versa, has been verified experimentally in the case of uvsp 72. The model has been generalised, so that it can be used for any microbial population subject to constant and high rates of any type of mutation providing that the mutant is stable, and either unable to grow or able to grow at this own rate different from that of the parental strain. (orig.) [de

  1. Growth hormone, interferon-gamma, and leukemia inhibitory factor promoted tyrosyl phosphorylation of insulin receptor substrate-1

    DEFF Research Database (Denmark)

    Argetsinger, L S; Hsu, G W; Myers, M G

    1995-01-01

    ), the principle substrate of the insulin receptor. Tyrosyl phosphorylation of IRS-1 is a critical step in insulin signaling and provides binding sites for proteins with the appropriate Src homology 2 domains, including the 85-kDa regulatory subunit of phosphatidylinositol (PI) 3'-kinase. In 3T3-F442A fibroblasts......., Campbell, G. S., Allevato, G., Billestrup, N., Norstedt, G., and Carter-Su, C. (1994) J. Biol. Chem. 269, 21709-21717). When other cytokines that activate JAK2 were tested for the ability to stimulate the tyrosyl phosphorylation of IRS-1, stimulation was detected with interferon-gamma and leukemia...... to JAK2. GH is also shown to stimulate binding of IRS-1 to the 85-kDa regulatory subunit of PI 3'-kinase. The ability of GH to stimulate tyrosyl phosphorylation of IRS-1 and its association with PI 3'-kinase provides a biochemical basis for responses shared by insulin and GH including the well...

  2. Tailoring Si(100) substrate surfaces for GaP growth by Ga deposition: A low-energy electron microscopy study

    Energy Technology Data Exchange (ETDEWEB)

    Rienäcker, Michael; Borkenhagen, Benjamin, E-mail: b.borkenhagen@pe.tu-clausthal.de; Lilienkamp, Gerhard; Daum, Winfried [TU Clausthal, Institut für Energieforschung und Physikalische Technologien, Leibnizstraße 4, D-38678 Clausthal-Zellerfeld (Germany)

    2015-08-07

    For GaP-on-Si(100) heteroepitaxy, currently considered as a model system for monolithic integration of III–V semiconductors on Si(100), the surface steps of Si(100) have a major impact on the quality of the GaP film. Monoatomic steps cause antiphase domains in GaP with detrimental electronic properties. A viable route is to grow the III–V epilayer on single-domain Si(100) with biatomic steps, but preferably not at the expense of reduced terrace widths introduced by miscut substrates. We have performed in situ investigations of the influence of Ga deposition on the kinetics of surface steps and terraces of Si(100) at substrate temperatures above 600 °C by low-energy electron microscopy. Starting from nearly equally distributed T{sub A} and T{sub B} terraces of a two-domain Si(100) surface, submonolayer deposition of Ga results in a transformation into a surface dominated by T{sub A} terraces and biatomic D{sub A} steps. This transformation is reversible, and Si(100) with monoatomic steps is recovered upon termination of the Ga flux. Under conditions of higher coverages (but still below 0.25 monolayer), we observe restructuring into a surface with T{sub B} dominance, similar to the findings of Hara et al. [J. Appl. Phys. 98, 083515 (2005)]. The occurrence and mutual transformations of surface structures with different terrace and step structures in a narrow range of temperatures and Ga deposition rates is discussed.

  3. Growth of epitaxially oriented Ag nanoislands on air-oxidized Si(1 1 1)-(7 × 7) surfaces: Influence of short-range order on the substrate

    International Nuclear Information System (INIS)

    Roy, Anupam; Bhattacharjee, K.; Ghatak, J.; Dev, B.N.

    2012-01-01

    Clean Si(1 1 1)-(7 × 7) surfaces, followed by air-exposure, have been investigated by reflection high-energy electron diffraction (RHEED) and scanning tunneling microscopy (STM). Fourier transforms (FTs) of STM images show the presence of short-range (7 × 7) order on the air-oxidized surface. Comparison with FTs of STM images from a clean Si(1 1 1)-(7 × 7) surface shows that only the 1/7th order spots are present on the air-oxidized surface. The oxide layer is ∼2-3 nm thick, as revealed by cross-sectional transmission electron microscopy (XTEM). Growth of Ag islands on these air-oxidized Si(1 1 1)-(7 × 7) surfaces has been investigated by in situ RHEED and STM and ex situ XTEM and scanning electron microscopy. Ag deposition at room temperature leads to the growth of randomly oriented Ag islands while preferred orientation evolves when Ag is deposited at higher substrate temperatures. For deposition at 550 °C face centered cubic Ag nanoislands grow with a predominant epitaxial orientation [11 ¯ 0] Ag ||[11 ¯ 0] Si , (1 1 1) Ag || (1 1 1) Si along with its twin [1 ¯ 10] Ag ||[11 ¯ 0] Si , (1 1 1) Ag || (1 1 1) Si , as observed for epitaxial growth of Ag on Si(1 1 1) surfaces. The twins are thus rotated by a 180° rotation of the Ag unit cell about the Si[1 1 1] axis. It is intriguing that Ag nanoislands follow an epitaxial relationship with the Si(1 1 1) substrate in spite of the presence of a 2-3 nm thick oxide layer between Ag and Si. Apparently the short-range order on the oxide surface influences the crystallographic orientation of the Ag nanoislands.

  4. Improved productivity of poly (3-hydroxybutyrate) (PHB) in thermophilic Chelatococcus daeguensis TAD1 using glycerol as the growth substrate in a fed-batch culture.

    Science.gov (United States)

    Cui, Bin; Huang, Shaobin; Xu, Fuqian; Zhang, Ruijian; Zhang, Yongqing

    2015-07-01

    A particularly successful polyhydroxyalkanoate (PHA) in industrial applications is poly (3-hydroxybutyrate) (PHB). However, one of the major obstacles for wider application of PHB is the cost of its production and purification. Therefore, it is desirable to discover a method for producing PHB in large quantities at a competitive price. Glycerol is a cheap and widely used carbon source that can be applied in PHB production process. There are numerous advantages to operating fermentation at elevated temperatures; only several thermophilic bacteria are able to accumulate PHB when glycerol is the growth substrate. Here, we report on the possibility of increasing PHB production at low cost using thermophilic Chelatococcus daeguensis TAD1 when glycerol is the growth substrate in a fed-batch culture. We found that (1) excess glycerol inhibited PHB accumulation and (2) organic nitrogen sources, such as tryptone and yeast extract, promoted the growth of C. daeguensis TAD1. In the batch fermentation experiments, we found that using glycerol at low concentrations as the sole carbon source, along with the addition of mixed nitrate (NH4Cl, tryptone, and yeast extract), stimulated PHB accumulation in C. daeguensis TAD1. The results showed that the PHB productivity decreased in the following order: two-stage fed-batch fermentation > fed-batch fermentation > batch fermentation. In optimized culture conditions, a PHB amount of 17.4 g l(-1) was obtained using a two-stage feeding regimen, leading to a productivity rate of 0.434 g l(-1) h(-1), which is the highest productivity rate reported for PHB to date. This high PHB biosynthetic productivity could decrease the total production cost, allowing for further development of industrial applications of PHB.

  5. Epitaxial growth of chalcopyrite CuInS2 films on GaAs (001) substrates by evaporation method with elemental sources

    International Nuclear Information System (INIS)

    Nozomu, Tsuboi; Satoshi, Kobayash; Nozomu, Tsuboi; Takashi, Tamogami

    2010-01-01

    Full text : Ternary chalcopyrite semiconductor CuInS 2 is one of the potential candidates for absorber layers in high-efficiency thin film solar cells due to its direct bandgap Eg of 1.5 eV, which matches with solar spectrum. However, CuInS 2 solar cells face the problem of lower solar conversion efficiency compared with Cu(InGa)Se 2 solar cells. Investigation of fundamental properties of CuInS 2 films is necessary to understand key issues for solar cell performance. Although in bulk CuInS 2 is known to crystallize into chalcopyrite (CH) structure, in thin film other structures such as Cu-Au (CA) and sphalerite (SP) structures may coexist. It was reported epitaxial growth of slightly Cu-rich CuInS 2 films with c-axis orientated CA only and/or with a mixture of a- and c-axes orientated CH structures on GaP (001) at substrate temperature of 500 degrees using the conventional evaporation method with three elemental sources. Successful growth of epitaxial CH structured CuInS 2 were observed for films grown on GaP at 570 degrees with slightly Cu-rich composition. In this paper, CuInS 2 films with various [Cu]/[In] ratios are grown on GaAs(001) substrates, and the composition range in terms of the [Cu]/[In] ratio where epitaxial films with CH structure grow and the structural qualities of the films are discussed in comparison with those on GaP substrates. Films with various ratios of [Cu]/[In]=0.8 ≤1.9 are grown at 500 degrees and 570 degrees using the evaporation system described in our previous reports. Regardless of the substrate temperature, noticeable X-ray diffraction (XRD) peaks of CH structured CuInS 2 phase are observed in slightly Cu-rich films. However, reflection high energy electron diffraction (RHEED) patterns of the slightly Cu-rich films grown at 570 degrees exhibit noticeable spots not only due to the CH structure but also due to the CA structure. The amount of the CA structure is considered to be small because of the absence of the XRD peaks of the CA

  6. Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy

    International Nuclear Information System (INIS)

    Nepal, N.; Goswami, R.; Qadri, S.B.; Mahadik, N.A.; Kub, F.J.; Eddy, C.R.

    2014-01-01

    Recent results on atomic layer epitaxy (ALE) growth and characterization of (0 0 0 1)AlN on highly oriented (1 1 1)Pt layers on amorphous HfO 2 /Si(1 0 0) are reported. HfO 2 was deposited by atomic layer deposition on Si(1 0 0) followed by ALE growth of Pt(15 nm) and, subsequently, AlN(60 nm) at 500 °C. Based on the X-ray diffraction and transmission electron microscopy measurements, the Pt and AlN layers are highly oriented along the (1 1 1) and (0 0 0 2) directions, respectively. Demonstrations of AlN/Pt heterostructures open up the possibility of new state-of-the-art microelectromechanical systems devices

  7. Epitaxial growth of GaSb on V-grooved Si (001) substrates with an ultrathin GaAs stress relaxing layer

    Science.gov (United States)

    Li, Qiang; Lai, Billy; Lau, Kei May

    2017-10-01

    We report epitaxial growth of GaSb nano-ridge structures and planar thin films on V-groove patterned Si (001) substrates by leveraging the aspect ratio trapping technique. GaSb was deposited on {111} Si facets of the V-shaped trenches using metal-organic chemical vapor deposition with a 7 nm GaAs growth initiation layer. Transmission electron microscopy analysis reveals the critical role of the GaAs layer in providing a U-shaped surface for subsequent GaSb epitaxy. A network of misfit dislocations was uncovered at the GaSb/GaAs hetero-interface. We studied the evolution of the lattice relaxation as the growth progresses from closely pitched GaSb ridges to coalesced thin films using x-ray diffraction. The omega rocking curve full-width-at-half-maximum of the resultant GaSb thin film is among the lowest values reported by molecular beam epitaxy, substantiating the effectiveness of the defect necking mechanism. These results thus present promising opportunities for the heterogeneous integration of devices based on 6.1 Å family compound semiconductors.

  8. Growth mechanisms and thickness effect on the properties of Al-doped ZnO thin films grown on polymeric substrates

    Energy Technology Data Exchange (ETDEWEB)

    Koidis, Christos; Logothetidis, Stergios; Kassavetis, Spiridon; Laskarakis, Argiris [Lab for Thin Films-Nanosystems and Nanometrology (LTFN), Physics Department, Aristotle University of Thessaloniki, 54124 Thessaloniki (Greece); Hastas, Nikolaos A.; Valassiades, Odisseas [Solid State Section, Physics Department, Aristotle University of Thessaloniki, 54124 Thessaloniki (Greece)

    2010-07-15

    The properties of Al-doped ZnO (AZO) thin films deposited by pulsed DC magnetron sputtering under various target power on polyethylene terephthalate (PET) substrates have been investigated. In situ and real-time spectroscopic ellipsometry (1.5-6.5 eV) has been employed to study the optical properties of the AZO films as well as the growth mechanisms taking place. With X-ray diffraction technique under grazing-incidence geometry, the structural characteristics profiles of the AZO films have been depicted. Nanoindentation measurements revealed information about the mechanical properties of the films and have been correlated to the conductivity measurements towards growth insights understanding. As results have shown, the increase of target power led to the increase of the carrier density as well as the hardness of the AZO films possibly both ascribed to dislocations induced. The stress during the deposition of AZO film under high target power favoured the island growth which is possibly both connected to the formation of defects as electron traps and dislocations as electron sources. Finally, the increase of AZO film thickness led to the increase of the resistivity possibly due to the enrichment of grain boundaries with defects as electron traps. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  9. Chemical vapor deposition growth of carbon nanotubes on Si substrates using Fe catalyst: What happens at the nanotube/Fe/Si interface

    International Nuclear Information System (INIS)

    Chakraborty, Amit K.; Jacobs, J.; Anderson, C.; Roberts, C. J.; Hunt, Michael R. C.

    2006-01-01

    Direct growth of carbon nanotubes (CNTs) on silicon is of great importance for their potential exploitation in the semiconductor industry. In this article we investigate the chemical vapor deposition growth of CNTs on Si substrates from ethylene precursor using an iron catalyst. We observe that CNTs are produced only at temperatures between 830 and 980 deg. C, and within this narrow temperature window CNT yield initially increases with temperature to reach a maximum around 900 deg. C and then declines. While the requirement of a minimum temperature to initiate CNT growth can be understood by considering the minimum energy necessary to activate the catalyst particles, characterization of the as-grown CNTs by atomic force microscopy and x-ray photoelectron spectroscopy reveals that a loss of catalyst is responsible for the observed decline in CNT yield above 900 deg. C. However, unlike some previous reports suggesting surface silicide formation as the mechanism for catalyst loss, we find that either subsurface diffusion or evaporation is the mechanism for the loss of catalyst material in the current study

  10. Biomimetic growth and substrate dependent mechanical properties of bone like apatite nucleated on Ti and magnetron sputtered TiO2 nanostructure

    Science.gov (United States)

    Sarma, Bimal K.; Das, Apurba; Barman, Pintu; Pal, Arup R.

    2016-04-01

    This report presents findings on biomimetic growth of hydroxyapatite (HAp) nanocrystals on Ti and sputtered TiO2 substrates. The possibility of TiO2 nanostructure as candidate materials for future biomedical applications has been explored through the comparison of microstructural and mechanical properties of bone like apatite grown on Ti and nano-TiO2 surfaces. Raman spectroscopy and x-ray diffraction studies reveal formation of carbonate apatite with apparent domain size in the nanoscale range. A better interaction at the nano-TiO2/nano-HAp interface due to higher interfacial area could promote the growth of bone like apatite. The crystal phases, crystallinity, and surface morphology of nano-TiO2 are considered as parameters to understand the nucleation and growth of apatite with different mechanical properties at the nanoscale. The methodology of x-ray line profile analysis encompasses deconvolution of merged peaks by preserving broadening due to nanosized HAp aggregates. The Young’s modulus of bone like apatite exhibits crystallographic directional dependence which suggests the presence of elastic anisotropy in bone like apatite. The lattice contraction in the c-direction is associated with the degree of carbonate substitution in the apatite lattice. The role of residual stress is critical for the lattice distortion of HAp deposited at physiological conditions of temperature and pH of human blood plasma. The ion concentration is crucial for the uniformity, crystallinity, and mechanical behaviour of the apatite.

  11. Biomimetic growth and substrate dependent mechanical properties of bone like apatite nucleated on Ti and magnetron sputtered TiO2 nanostructure

    International Nuclear Information System (INIS)

    Sarma, Bimal K; Das, Apurba; Barman, Pintu; Pal, Arup R

    2016-01-01

    This report presents findings on biomimetic growth of hydroxyapatite (HAp) nanocrystals on Ti and sputtered TiO 2 substrates. The possibility of TiO 2 nanostructure as candidate materials for future biomedical applications has been explored through the comparison of microstructural and mechanical properties of bone like apatite grown on Ti and nano-TiO 2 surfaces. Raman spectroscopy and x-ray diffraction studies reveal formation of carbonate apatite with apparent domain size in the nanoscale range. A better interaction at the nano-TiO 2 /nano-HAp interface due to higher interfacial area could promote the growth of bone like apatite. The crystal phases, crystallinity, and surface morphology of nano-TiO 2 are considered as parameters to understand the nucleation and growth of apatite with different mechanical properties at the nanoscale. The methodology of x-ray line profile analysis encompasses deconvolution of merged peaks by preserving broadening due to nanosized HAp aggregates. The Young’s modulus of bone like apatite exhibits crystallographic directional dependence which suggests the presence of elastic anisotropy in bone like apatite. The lattice contraction in the c-direction is associated with the degree of carbonate substitution in the apatite lattice. The role of residual stress is critical for the lattice distortion of HAp deposited at physiological conditions of temperature and pH of human blood plasma. The ion concentration is crucial for the uniformity, crystallinity, and mechanical behaviour of the apatite. (paper)

  12. Análise de crescimento de gérbera de vaso conduzida em diferentes substratos Growth analysis of potted gerbera grown in different substrates

    Directory of Open Access Journals (Sweden)

    Fernanda Ludwig

    2010-03-01

    Full Text Available O cultivo e o comércio de gérbera em vaso são recentes e há uma grande demanda quanto à seleção de substratos adequados à sua produção. O presente trabalho foi desenvolvido com o objetivo de avaliar o crescimento de duas cultivares de gérbera de vaso, conduzidas com diferentes substratos. O experimento foi realizado em casa de vegetação entre setembro e novembro de 2008, em Botucatu-SP. O delineamento experimental utilizado foi de blocos ao acaso em esquema fatorial 5x2 (substratos x cultivares e quatro repetições. Plantas de gérbera, cultivares Cherry e Red, foram avaliadas quinzenalmente (1, 15, 29 e 43 dias após aclimatação (DAA quanto à área foliar e a fitomassa seca da parte aérea, as quais foram ajustadas em relação ao tempo com o programa ANACRES para obtenção da razão da área foliar (RAF, taxa de crescimento relativo (TCR e taxa de assimilação líquida (TAL. As plantas de gérbera apresentaram melhor desenvolvimento quando conduzidas no substrato 4 (30% casca de pinus, 30% C1, 20% fibra de coco granulada, 20% fibra de coco mista. A seleção de substratos adequados ao desenvolvimento de gérbera deve considerar, principalmente, as características químicas e físicas dos mesmos. Para as cultivares estudadas, valores de pH do substrato inferiores a 5,5 e superiores a 7,0 foram inadequados para o desenvolvimento, bem como densidades úmidas superiores a 530 kg m-3.Cultivation and commercialization of potted gerbera are recent issues and there is a great demand for adequate substrates for its production. This work aimed to evaluate the growth of two potted gerbera cultivars (Cherry and Red grown in different substrates. The experiment was carried out in a greenhouse from September to November 2008 at Botucatu, São Paulo State, Brazil. Experimental design was randomized blocks in a 5x2 factorial arrangement (substrates x cultivars. Gerbera plants leaf area and dry phytomass were evaluated fortnightly (1, 15

  13. Olive mill wastewater triggered changes in physiology and nutritional quality of tomato (Lycopersicon esculentum mill) depending on growth substrate.

    Science.gov (United States)

    Ouzounidou, G; Asfi, M; Sotirakis, N; Papadopoulou, P; Gaitis, F

    2008-10-30

    We have studied the changes in the physiology and nutritional quality of Lycopersicon esculentum exposed to olive mill wastewater (OMW) with regard to cultivation in sand and soil. Tomato plant performance decreased with increasing concentration of OMW to both substrates. Root was more sensitive to OMW than the upper parts of the plants, grown either in sand or in soil for 10 days and 3 months, respectively, probably due to the direct OMW toxicity on roots as compared to other parts. Significant restriction on uptake and translocation of nutrients (K, Na, Fe, Ca and Mg) under OMW application was found. The decrease in the photochemical efficiency of PSII photochemistry in the light adapted state and the big decrease in photochemical quenching, indicate that OMW resulted in diminished reoxidation of Q(A)(-) and started to inactivate the reaction centers of PSII. The OMW supply on soil and sand, resulted in leaf water stress and lesser water use efficiency. Plants treated with high OMW concentration, produced fewer but bigger tomatoes as compared to plants treated with lower OMW concentration. Generally, fruit yield and nutritional value was inhibited under OMW application.

  14. A-axis oriented superconductive YBCO thin films. Growth mechanism on MgO substrate. [Y-Ba-Cu-O

    Energy Technology Data Exchange (ETDEWEB)

    Hamet, J F; Mercey, B; Hervieu, M; Poullain, G; Raveau, B [Centre de Materiaux Supraconducteurs, CRISMAT-ISMRa, 14 - Caen (France)

    1992-08-01

    The growth mechanism of a-axis oriented YBCO thin films has been studied by TEM. At 650degC, a disordered cubic perovskite is first formed with a[sub p]parallela[sub MgO], then a strained tetragonal a-axis oriented perovskite is observed, with c=3a[sub p], slightly misoriented with respect to MgO and showing a marquetry-like contrast. At 750degC, a [1anti 10] axis oriented perovskite is formed whose lattice exhibits a rotation with respect to MgO lattice, but also a tilting of the [CuO[sub 2

  15. Identification of SH2-Bbeta as a substrate of the tyrosine kinase JAK2 involved in growth hormone signaling.

    OpenAIRE

    Rui, L; Mathews, L S; Hotta, K; Gustafson, T A; Carter-Su, C

    1997-01-01

    Activation of the tyrosine kinase JAK2 is an essential step in cellular signaling by growth hormone (GH) and multiple other hormones and cytokines. Murine JAK2 has a total of 49 tyrosines which, if phosphorylated, could serve as docking sites for Src homology 2 (SH2) or phosphotyrosine binding domain-containing signaling molecules. Using a yeast two-hybrid screen of a rat adipocyte cDNA library, we identified a splicing variant of the SH2 domain-containing protein SH2-B, designated SH2-Bbeta,...

  16. Growth and characterization of epitaxial ultra-thin NbN films on 3C-SiC/Si substrate for terahertz applications

    International Nuclear Information System (INIS)

    Dochev, D; Desmaris, V; Pavolotsky, A; Meledin, D; Belitsky, V; Lai, Z; Henry, A; Janzen, E; Pippel, E; Woltersdorf, J

    2011-01-01

    We report on electrical properties and microstructure of epitaxial thin NbN films grown on 3C-SiC/Si substrates by means of reactive magnetron sputtering. A complete epitaxial growth at the NbN/3C-SiC interface has been confirmed by means of high resolution transmission electron microscopy (HRTEM) along with x-ray diffractometry (XRD). Resistivity measurements of the films have shown that the superconducting transition onset temperature (T C ) for the best specimen is 11.8 K. Using these epitaxial NbN films, we have fabricated submicron-size hot-electron bolometer (HEB) devices on 3C-SiC/Si substrate and performed their complete DC characterization. The observed critical temperature T C = 11.3 K and critical current density of about 2.5 MA cm -2 at 4.2 K of the submicron-size bridges were uniform across the sample. This suggests that the deposited NbN films possess the necessary homogeneity to sustain reliable hot-electron bolometer device fabrication for THz mixer applications.

  17. Growth and characterization of epitaxial ultra-thin NbN films on 3C-SiC/Si substrate for terahertz applications

    Energy Technology Data Exchange (ETDEWEB)

    Dochev, D; Desmaris, V; Pavolotsky, A; Meledin, D; Belitsky, V [Group for Advanced Receiver Development, Department of Earth and Space Sciences, Chalmers University of Technology, SE-412 96 Gothenburg (Sweden); Lai, Z [Nanofabrication Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-412 96 Gothenburg (Sweden); Henry, A; Janzen, E [Department of Physics, Chemistry and Biology, Linkoeping University, SE-581 83 Linkoeping (Sweden); Pippel, E; Woltersdorf, J, E-mail: dimitar.dochev@chalmers.se [Max-Planck-Institute of Microstructure Physics, Weinberg 2, D-06120 Halle (Germany)

    2011-03-15

    We report on electrical properties and microstructure of epitaxial thin NbN films grown on 3C-SiC/Si substrates by means of reactive magnetron sputtering. A complete epitaxial growth at the NbN/3C-SiC interface has been confirmed by means of high resolution transmission electron microscopy (HRTEM) along with x-ray diffractometry (XRD). Resistivity measurements of the films have shown that the superconducting transition onset temperature (T{sub C}) for the best specimen is 11.8 K. Using these epitaxial NbN films, we have fabricated submicron-size hot-electron bolometer (HEB) devices on 3C-SiC/Si substrate and performed their complete DC characterization. The observed critical temperature T{sub C} = 11.3 K and critical current density of about 2.5 MA cm{sup -2} at 4.2 K of the submicron-size bridges were uniform across the sample. This suggests that the deposited NbN films possess the necessary homogeneity to sustain reliable hot-electron bolometer device fabrication for THz mixer applications.

  18. Growth of strained InGaAs/GaAs quantum wells and index guided injection lasers over nonplanar substrates by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Arent, D.J.; Galeuchet, Y.D.; Nilsson, S.; Meier, H.P.

    1990-01-01

    Strained InGaAs/GaAs quantum wells were grown on nonplanar substrates by molecular beam epitaxy and studied by scanning electron microscopy and low temperature spatially and spectrally resolved cathodoluminescence spectroscopy. For (100) ridges and grooves formed with (311)A sidewalls, almost complete removal of In from the strained quantum wells on the (311)A facet is observed. Corresponding increases of In content in the quantum wells grown on the (100) facets indicate that most if not all of the In is displaced from the (311)A facet via interplanar adatom migration. Ga adatom migration is also observed under our growth conditions such that quantum wells grown nominally near the critical layer thickness on structures less than ≅2.5 μm wide are no longer pseudomorphically strained, as detected by luminescence linewidth analysis. We present the first results of strained InGaAs/GaAs index guided injection lasers grown by single-step molecular beam epitaxy over nonplanar substrates and show that differences greater than 50 meV in the effective band gap of a 70 A quantum well can be achieved between the gain region and the nonabsorbing waveguide without relaxing the strain. Room temperature threshold currents as low as 6 mA for 4 μmx750 μm uncoated devices lasing continuously at a wavelength of 1.01 μm have been achieved

  19. Growth of Hexagonal Columnar Nanograin Structured SiC Thin Films on Silicon Substrates with Graphene–Graphitic Carbon Nanoflakes Templates from Solid Carbon Sources

    Directory of Open Access Journals (Sweden)

    Wanshun Zhao

    2013-04-01

    Full Text Available We report a new method for growing hexagonal columnar nanograin structured silicon carbide (SiC thin films on silicon substrates by using graphene–graphitic carbon nanoflakes (GGNs templates from solid carbon sources. The growth was carried out in a conventional low pressure chemical vapor deposition system (LPCVD. The GGNs are small plates with lateral sizes of around 100 nm and overlap each other, and are made up of nanosized multilayer graphene and graphitic carbon matrix (GCM. Long and straight SiC nanograins with hexagonal shapes, and with lateral sizes of around 200–400 nm are synthesized on the GGNs, which form compact SiC thin films.

  20. Effect of the nand p-type Si(100) substrates with a SiC buffer layer on the growth mechanism and structure of epitaxial layers of semipolar AlN and GaN

    Science.gov (United States)

    Bessolov, V. N.; Grashchenko, A. S.; Konenkova, E. V.; Myasoedov, A. V.; Osipov, A. V.; Red'kov, A. V.; Rodin, S. N.; Rubets, V. P.; Kukushkin, S. A.

    2015-10-01

    A new effect of the n-and p-type doping of the Si(100) substrate with a SiC film on the growth mechanism and structure of AlN and GaN epitaxial layers has been revealed. It has been experimentally shown that the mechanism of AlN and GaN layer growth on the surface of a SiC layer synthesized by substituting atoms on n- and p-Si substrates is fundamentally different. It has been found that semipolar AlN and GaN layers on the SiC/Si(100) surface grow in the epitaxial and polycrystalline structures on p-Si and n-Si substrates, respectively. A new method for synthesizing epitaxial semipolar AlN and GaN layers by chloride-hydride epitaxy on silicon substrates has been proposed.

  1. Direct growth of hexagonal boron nitride/graphene heterostructures on cobalt foil substrates by plasma-assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Zhongguang; Khanaki, Alireza; Tian, Hao; Zheng, Renjing; Suja, Mohammad; Liu, Jianlin, E-mail: jianlin@ece.ucr.edu [Quantum Structures Laboratory, Department of Electrical and Computer Engineering, University of California, Riverside, California 92521 (United States); Zheng, Jian-Guo [Irvine Materials Research Institute, University of California, Irvine, California 92697-2800 (United States)

    2016-07-25

    Graphene/hexagonal boron nitride (G/h-BN) heterostructures have attracted a great deal of attention because of their exceptional properties and wide variety of potential applications in nanoelectronics. However, direct growth of large-area, high-quality, and stacked structures in a controllable and scalable way remains challenging. In this work, we demonstrate the synthesis of h-BN/graphene (h-BN/G) heterostructures on cobalt (Co) foil by sequential deposition of graphene and h-BN layers using plasma-assisted molecular beam epitaxy. It is found that the coverage of h-BN layers can be readily controlled on the epitaxial graphene by growth time. Large-area, uniform-quality, and multi-layer h-BN films on thin graphite layers were achieved. Based on an h-BN (5–6 nm)/G (26–27 nm) heterostructure, capacitor devices with Co(foil)/G/h-BN/Co(contact) configuration were fabricated to evaluate the dielectric properties of h-BN. The measured breakdown electric field showed a high value of ∼2.5–3.2 MV/cm. Both I-V and C-V characteristics indicate that the epitaxial h-BN film has good insulating characteristics.

  2. Model experiments on growth modes and interface electronics of CuInS{sub 2}: Ultrathin epitaxial films on GaAs(100) substrates

    Energy Technology Data Exchange (ETDEWEB)

    Calvet, Wolfram [Institute for Heterogeneous Materials Systems, Helmholtz-Zentrum Berlin, Hahn-Meitner-Platz 1, 14109, Berlin (Germany); Lewerenz, Hans-Joachim [Joint Center for Artificial Photosynthesis, California Institute of Technology, 1200 E. California Blvd., Pasadena, CA, 91101 (United States); Pettenkofer, Christian [Institute Silicon Photovoltaics, Helmholtz-Zentrum Berlin, Kekulestrasse 5, 12489, Berlin (Germany)

    2014-09-15

    The heterojunction formation between GaAs(100) and CuInS{sub 2} is investigated using ultraviolet photoelectron spectroscopy (UPS), X-ray photoelectron spectroscopy (XPS), and low energy electron diffraction (LEED). Thin layers of CuInS{sub 2} films were deposited in a step-by-step process on wet chemically pre-treated GaAs(100) surfaces by molecular beam epitaxy (MBE) with a total upper thickness limit of the films of 60 nm. The film growth starts from a sulfur-rich GaAs(100) surface. XPS core level analysis of the substrate and film reveals initially a transitory growth regime with the formation of a Ga containing chalcopyrite phase. With increasing film thickness, a change in stoichiometry from Cu-poor to Cu-rich composition is observed. The evaluation of the LEED data shows the occurrence of a recrystallization process where the film orientation follows that of the substrate with the epitaxial relation GaAs{100} parallel CuInS{sub 2}{001}. On the completed junction with a CuInS{sub 2} film thickness of 60 nm, the band discontinuities of the GaAs(100)/CuInS{sub 2} structure measured with XPS and UPS were determined as ΔE{sub V} = 0.1 ± 0.1 eV and ΔE{sub C} = 0.0 ± 0.1 eV, thus showing a type II band alignment. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  3. Two-dimensional environmental profiles of growth and fumonisin production by Fusarium proliferatum on a wheat-based substrate.

    Science.gov (United States)

    Cendoya, Eugenia; Farnochi, María Cecilia; Chulze, Sofia Noemi; Ramirez, María Laura

    2014-07-16

    The effect of water activity (aW; 0.995, 0.99, 0.98, 0.96, 0.94, 0.92, and 0.90), temperature (15, 25, and 30°C), incubation time (7, 14, 21 and 28days), and their interactions on mycelial growth and fumonisin production on wheat-based medium by three Fusarium proliferatum strains isolated from wheat in Argentina was evaluated. Maximum growth rates were obtained at the highest aW (0.995) and 30°C, with growth decreasing as the aW of the medium was reduced. Maximum amounts of total fumonisins (FB1, FB2 and FB3) were produced at 0.99 aW and 25°C after 21 and 28days of incubation for 2 strains, and at 15°C and 0.98 aW after 28days of incubation for the third strain. The fumonisin concentrations varied considerably depending on the aW and temperature interactions assayed. The studied strains had different fumonisin production profiles. F. proliferatum ITEM 15661 and ITEM 15664 produced FB1 and FB2 whereas F. proliferatum ITEM 15654 was able to produce FB1, FB2 and FB3. Interestingly, fumonisin production profiles for each particular strain were related to incubation temperatures. Fumonisins were produced from 15 to 30°C and at aW values of 0.92 to 0.995 after 21 to 28days of incubation. However at 7 and 14days of incubation small amounts of fumonisin were produced at aW lower than 0.94. Two-dimensional profiles of aW by temperature interactions were developed from these data to identify areas where conditions indicate a significant risk from fumonisin accumulation on wheat. Temperature and aW conditions that resulted in fumonisin production are those found during wheat grain development (especially milk and dough stages) in the field. This study provides useful base line data on conditions representing a high and a low risk for contamination of wheat by fumonisins which is becoming of greater concern because this cereal is destined mainly for human consumption. Copyright © 2014 Elsevier B.V. All rights reserved.

  4. Growth Al{sub x}Ga{sub 1−x}N films on Si substrates by magnetron sputtering and high ammoniated two-step method

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Xuewen, E-mail: wangxuew@nwu.edu.cn [School of Information Science and Technology, Northwest University, Xi' an 710127 (China); Su, Xingxing; Hu, Feng; He, Lin; He, Lewan; Zhang, Zhiyong; Zhao, Wu [School of Information Science and Technology, Northwest University, Xi' an 710127 (China); Wang, Kai-Ge; Wang, Shuang [Institute of Photonics & Photo-Technology, International Joint Research Centre of Photoelectric Technology & Nano-functional Materials and Application, Northwest University, Xi' an 710069 (China)

    2016-05-15

    In this paper, Al{sub x}Ga{sub 1−x}N films on Si substrates were synthesized with adjusting process parameters by magnetron sputtering and high ammoniated two-step method innovatively, while gallium oxide was used as gallium target, and aluminum was used as aluminum target, ammonia gas and nitrogen were used as nitrogen source. The influence of process parameters on the quality of Al{sub x}Ga{sub 1−x}N films was researched with X-ray diffraction (XRD), scanning electron microscope (SEM), and Energy Diffraction Spectrum (EDS) for the prepared samples. The results showed that Al{sub x}Ga{sub 1−x}N film can be grown on the Si substrate by magnetron sputtering and high ammoniated two-step method, and substrate temperature, sputtering power, nitrogen concentration also have a great impact on the quality of Al{sub x}Ga{sub 1−x}N film. The sample was developed along (002) peak preferred with high orientation at 200 °C. High-quality film could be grown when the x is 0.32 in Al{sub x}Ga{sub 1−x}N films grown in 300 °C substrate temperature, 150 W sputtering power and 50% nitrogen concentration conditions, which is used for gas sensitive sensor. And compared stress by the measurement of Raman with an excitation wavelength λ = 532 nm. The samples were tested by photoluminescence (PL), which indicated two light-emitting peaks at 405 nm and 645 nm when the excitation wavelength is 325 nm. The measure in Hall Effect Measurement System showed that the carrier concentration and mobility were changed with different Al components. - Highlights: • Grow Al{sub 0.32}Ga{sub 0.68}N films on Si by RF sputtering and high ammoniated two-step method. • The sample was developed along (002) peak preferred with high orientation at 200 °C. • The growth technics of the film was employed for the preparation of gas sensors. • Carrier concentration and mobility were changed with different Al components.

  5. Broad spectrum bioactive sunscreens.

    Science.gov (United States)

    Velasco, Maria Valéria Robles; Sarruf, Fernanda Daud; Salgado-Santos, Idalina Maria Nunes; Haroutiounian-Filho, Carlos Alberto; Kaneko, Telma Mary; Baby, André Rolim

    2008-11-03

    The development of sunscreens containing reduced concentration of chemical UV filters, even though, possessing broad spectrum effectiveness with the use of natural raw materials that improve and infer UV absorption is of great interest. Due to the structural similarities between polyphenolic compounds and organic UV filters, they might exert photoprotection activity. The objective of the present research work was to develop bioactive sunscreen delivery systems containing rutin, Passiflora incarnata L. and Plantago lanceolata extracts associated or not with organic and inorganic UV filters. UV transmission of the sunscreen delivery system films was performed by using diffuse transmittance measurements coupling to an integrating sphere. In vitro photoprotection efficacy was evaluated according to the following parameters: estimated sun protection factor (SPF); Boot's Star Rating category; UVA/UVB ratio; and critical wavelength (lambda(c)). Sunscreen delivery systems obtained SPF values ranging from 0.972+/-0.004 to 28.064+/-2.429 and bioactive compounds interacted with the UV filters positive and negatively. This behavior may be attributed to: the composition of the delivery system; the presence of inorganic UV filter and quantitative composition of the organic UV filters; and the phytochemical composition of the P. incarnata L. and P. lanceolata extracts. Among all associations of bioactive compounds and UV filters, we found that the broad spectrum sunscreen was accomplished when 1.68% (w/w) P. incarnata L. dry extract was in the presence of 7.0% (w/w) ethylhexyl methoxycinnamate, 2.0% (w/w) benzophenone-3 and 2.0% (w/w) TiO(2). It was demonstrated that this association generated estimated SPF of 20.072+/-0.906 and it has improved the protective defense against UVA radiation accompanying augmentation of the UVA/UVB ratio from 0.49 to 0.52 and lambda(c) from 364 to 368.6nm.

  6. Exploitation of grape marc as functional substrate for lactic acid bacteria and bifidobacteria growth and enhanced antioxidant activity.

    Science.gov (United States)

    Campanella, Daniela; Rizzello, Carlo Giuseppe; Fasciano, Cristina; Gambacorta, Giuseppe; Pinto, Daniela; Marzani, Barbara; Scarano, Nicola; De Angelis, Maria; Gobbetti, Marco

    2017-08-01

    This study aimed at using grape marc for the growth of lactic acid bacteria and bifidobacteria with the perspective of producing a functional ingredient having antioxidant activity. Lactobacillus plantarum 12A and PU1, Lactobacillus paracasei 14A, and Bifidobacterium breve 15A showed the ability to grow on grape marc (GM) based media. The highest bacterial cell density (>9.0 CFU/g) was found in GM added of 1% of glucose (GMG). Compared to un-inoculated and incubated control fermented GMG showed a decrease of carbohydrates and citric acid together with an increase of lactic acid. The content of several free amino acids and phenol compounds differed between samples. Based on the survival under simulated gastro-intestinal conditions, GMG was a suitable carrier of lactic acid bacteria and bifidobacteria strains. Compared to the control, cell-free supernatant (CFS) of fermented GMG exhibited a marked antioxidant activity in vitro. The increased antioxidant activity was confirmed using Caco-2 cell line after inducing oxidative stress, and determining cell viability and radical scavenging activity through MTT and DCFH-DA assays, respectively. Supporting these founding, the SOD-2 gene expression of Caco-2 cells also showed a lowest pro-oxidant effect induced by the four CFS of GMG fermented by lactic acid bacteria and bifidobacteria. Copyright © 2017 Elsevier Ltd. All rights reserved.

  7. Post-growth annealing of zinc oxide thin films pulsed laser deposited under enhanced oxygen pressure on quartz and silicon substrates

    International Nuclear Information System (INIS)

    Rusop, M.; Uma, K.; Soga, T.; Jimbo, T.

    2006-01-01

    Zinc oxide (ZnO) thin films have been prepared by pulsed laser deposition (PLD) technique at room temperature on quartz and single crystal silicon (1 0 0) substrates. The oxygen ambient gas pressure was attained at 6 Torr during the deposition. The deposited films were post-growth annealed in air at various annealing temperatures for 30 min. The X-ray diffraction (XRD), optical and electrical properties have been measured to study the properties of the films as a function of annealing temperatures. XRD has shown the strength of (0 0 2) peak increases and FWHM value decreases as the annealing temperatures increases from 200 to 600 deg. C. The post-growth annealed at 600 deg. C show dominant c-axis oriented hexagonal wurtize crystal structure and exhibit high average transmittance about 85% in the visible region and very sharp absorption edge at 376 nm with energy band gap of approximately 3.46 eV. Electrical measurement indicates the resistivity decreases with the annealing temperatures up to 600 deg. C, after which it increases with higher annealing temperatures at 800 deg. C. The complex of oxygen vacancy in the ZnO films may be the source of low conductivity in undoped ZnO films

  8. Effects of Cordyceps militaris spent mushroom substrate on mucosal and serum immune parameters, disease resistance and growth performance of Nile tilapia, (Oreochromis niloticus).

    Science.gov (United States)

    Doan, Hien Van; Hoseinifar, Seyed Hossein; Tapingkae, Wanaporn; Chitmanat, Chanagun; Mekchay, Supamit

    2017-08-01

    The aim of present study was determination effects of dietary administration of C. militaris spent mushroom substrate (SMS) on mucosal and serum immune parameters, disease resistance, and growth performance of Nile tilapia (Oreochromis niloticus). Two hundred twenty five fish of similar weight (37.28 ± 0.10 g) were assigned to the following diets [0 (T1- Control), 5 (T2), 10 (T3), 20 (T4) and 40 g kg -1 (T5) SMS]. After 60 days of feeding trial, growth performance, skin mucus lysozyme and peroxidase activities as well as serum innate immune were measured. In addition, survival rate and innate immune responses were calculated after challenge test (15 days) against Streptococcus agalactiae. The results revealed that regardless of inclusion levels, feeding Nile tilapia with SMS supplemented diets significantly increased skin mucus lysozyme and peroxidase activities as well as serum immune parameters (SL, ACH50, PI, RB, and RB) compared control group (P health status. Copyright © 2017 Elsevier Ltd. All rights reserved.

  9. Selective-area growth of GaN nanowires on SiO{sub 2}-masked Si (111) substrates by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Kruse, J. E.; Doundoulakis, G. [Department of Physics, University of Crete, P. O. Box 2208, 71003 Heraklion (Greece); Institute of Electronic Structure and Laser, Foundation for Research and Technology–Hellas, N. Plastira 100, 70013 Heraklion (Greece); Lymperakis, L. [Max-Planck-Institut für Eisenforschung, Max-Planck-Straße 1, 40237 Düsseldorf (Germany); Eftychis, S.; Georgakilas, A., E-mail: alexandr@physics.uoc.gr [Department of Physics, University of Crete, P. O. Box 2208, 71003 Heraklion (Greece); Adikimenakis, A.; Tsagaraki, K.; Androulidaki, M.; Konstantinidis, G. [Institute of Electronic Structure and Laser, Foundation for Research and Technology–Hellas, N. Plastira 100, 70013 Heraklion (Greece); Olziersky, A.; Dimitrakis, P.; Ioannou-Sougleridis, V.; Normand, P. [Institute of Nanoscience and Nanotechnology, NCSR Demokritos, Patriarchou Grigoriou and Neapoleos 27, 15310 Aghia Paraskevi, Athens (Greece); Koukoula, T.; Kehagias, Th.; Komninou, Ph. [Department of Physics, Aristotle University of Thessaloniki, 54124 Thessaloniki (Greece)

    2016-06-14

    We analyze a method to selectively grow straight, vertical gallium nitride nanowires by plasma-assisted molecular beam epitaxy (MBE) at sites specified by a silicon oxide mask, which is thermally grown on silicon (111) substrates and patterned by electron-beam lithography and reactive-ion etching. The investigated method requires only one single molecular beam epitaxy MBE growth process, i.e., the SiO{sub 2} mask is formed on silicon instead of on a previously grown GaN or AlN buffer layer. We present a systematic and analytical study involving various mask patterns, characterization by scanning electron microscopy, transmission electron microscopy, and photoluminescence spectroscopy, as well as numerical simulations, to evaluate how the dimensions (window diameter and spacing) of the mask affect the distribution of the nanowires, their morphology, and alignment, as well as their photonic properties. Capabilities and limitations for this method of selective-area growth of nanowires have been identified. A window diameter less than 50 nm and a window spacing larger than 500 nm can provide single nanowire nucleation in nearly all mask windows. The results are consistent with a Ga diffusion length on the silicon dioxide surface in the order of approximately 1 μm.

  10. High-temperature Josephson transition, formed in epitaxial step from CeO2 in the process of growth on a sapphire substrate

    International Nuclear Information System (INIS)

    Kotelyanskij, I.M.; Mashtakov, A.D.; Mozhaev, P.B.; Ovsyannikov, G.A.; Dukaev, Yu.M.

    1995-01-01

    Results on production and investigation into Josephson without applying the substrate surface ion etching, are presented for the first time. This method of stage formation allows one to obtain a practically defectless surface of lateral face and substrate. Besides, it allows one to form a stage of material, different from the substrate material

  11. Influence of FeEDDS, FeEDTA, FeDTPA, FeEDDHA, and FeSO4 on Marigold Growth and Nutrition, and Substrate and Runoff Chemistry

    Science.gov (United States)

    Objectives of the study were to determine effects of Fe source on plant growth, plant nutrition, substrate chemistry and runoff chemistry. Iron source (FS) treatments consisted of Fe-aminopolycarboxylic acid (APCA) complexones iron ethylenediaminetetraacetic acid (FeEDTA), iron [S, S']-ethylenediam...

  12. Large piezoelectric strain with ultra-low strain hysteresis in highly c-axis oriented Pb(Zr0.52Ti0.48)O3 films with columnar growth on amorphous glass substrates

    NARCIS (Netherlands)

    Nguyen, Minh D.; Houwman, Evert P.; Rijnders, Guus

    2017-01-01

    Thin films of PbZr0.52Ti0.48O3 (PZT) with largely detached columnar grains, deposited by pulsed laser deposition (PLD) on amorphous glass substrates covered with Ca2Nb3O10 nanosheets as growth template and using LaNiO3 electrode layers, are shown to exhibit very high unipolar piezoelectric strain

  13. A Novel indole compound that inhibits Pseudomonas aeruginosa growth by targeting MreB is a substrate for MexAB-OprM.

    Science.gov (United States)

    Robertson, Gregory T; Doyle, Timothy B; Du, Qun; Duncan, Leonard; Mdluli, Khisimuzi E; Lynch, A Simon

    2007-10-01

    Drug efflux systems contribute to the intrinsic resistance of Pseudomonas aeruginosa to many antibiotics and biocides and hamper research focused on the discovery and development of new antimicrobial agents targeted against this important opportunistic pathogen. Using a P. aeruginosa PAO1 derivative bearing deletions of opmH, encoding an outer membrane channel for efflux substrates, and four efflux pumps belonging to the resistance nodulation/cell division class including mexAB-oprM, we identified a small-molecule indole-class compound (CBR-4830) that is inhibitory to growth of this efflux-compromised strain. Genetic studies established MexAB-OprM as the principal pump for CBR-4830 and revealed MreB, a prokaryotic actin homolog, as the proximal cellular target of CBR-4830. Additional studies establish MreB as an essential protein in P. aeruginosa, and efflux-compromised strains treated with CBR-4830 transition to coccoid shape, consistent with MreB inhibition or depletion. Resistance genetics further suggest that CBR-4830 interacts with the putative ATP-binding pocket in MreB and demonstrate significant cross-resistance with A22, a structurally unrelated compound that has been shown to promote rapid dispersion of MreB filaments in vivo. Interestingly, however, ATP-dependent polymerization of purified recombinant P. aeruginosa MreB is blocked in vitro in a dose-dependent manner by CBR-4830 but not by A22. Neither compound exhibits significant inhibitory activity against mutant forms of MreB protein that bear mutations identified in CBR-4830-resistant strains. Finally, employing the strains and reagents prepared and characterized during the course of these studies, we have begun to investigate the ability of analogues of CBR-4830 to inhibit the growth of both efflux-proficient and efflux-compromised P. aeruginosa through specific inhibition of MreB function.

  14. SUBSTRATES FOR PRODUCTION AND GROWTH OF MANGABA (Hancornia speciosa Gomes SEEDLINGS PRODUÇÃO E CRESCIMENTO DE MUDAS DE MANGABEIRA (Hancornia speciosa Gomez EM DIFERENTES SUBSTRATOS

    Directory of Open Access Journals (Sweden)

    Maria Eloisa Cardoso da Rosa

    2007-09-01

    Full Text Available

    Mangaba (Hancornia speciosa Gomez seedlings were transplanted eleven months after emergence to the following substrates: soil (Oxisol, soil + 33% calcined sugar-cane bagasse, and soil + 66% calcined sugar-cane bagasse, with and without lime and fertilizer. At 70, 100 and 130 days after transplanting, plants were evaluated for height and number of leaf pairs. At the end of the experiment – 130 days – roots and aerial part dry matter were weighed. The addition of 0.5 kg.m-3 of 10-10-10 fertilizer to the soil was the best treatment. Root dry matter was slightly higher than aerial part dry matter on some treatments. Roots have developed more than aerial parts. In general, substrates with pH values between 5.2 and 5.5 promote higher growth of mangaba seedlings, but those with pH between 6.0 and 6.8 cause seedling growth reduction.

    KEY-WORDS: Mangaba; native fruit trees; lime; fertilizer; substrate.

    Mudas de mangabeira (Hancornia speciosa Gomez com onze meses de idade foram submetidas a diferentes combinações de substratos: solo apenas (Latossolo Vermelho-Amarelo, solo + 33% de bagacilho de cana calcinado, e solo + 66% de bagacilho de cana calcinado, os quais receberam ou não calagem e adubação. Após a aplicação dos tratamentos, foram avaliados aos 70, 100 e 130 dias, o diâmetro basal das mudas, a altura de plantas e o número de pares de folhas, bem como o peso seco da parte aérea e da raiz, ao final do experimento. Pôde-se verificar que a adição de 0,5 kg.m-3 do adubo químico 10-10-10 ao solo foi o melhor tratamento, nas condições estudadas. Houve uma tendência de superioridade do peso seco da raiz, em relação à parte aérea, em parte dos tratamentos, evidenciando um maior desenvolvimento da raiz das mudas de mangaba, em rela

  15. Crescimento vegetativo de porta-enxertos de citros produzidos em substratos comerciais Vegetative growth of citrus rootstocks producing in distinct commercials substrates

    Directory of Open Access Journals (Sweden)

    Mário Luís Fochesato

    2007-08-01

    Full Text Available Este trabalho teve o objetivo de avaliar o crescimento vegetativo de porta-enxertos de citros produzidos em diferentes substratos comerciais, mantidos em recipientes de quatro litros. O experimento foi desenvolvido em casa de vegetação, na Estação Experimental Agronômica da UFRGS, em Eldorado do Sul, RS, no período de junho/2003 a março/2004, e seguiu o delineamento experimental de blocos casualizados, testando-se três substratos comerciais: Turfa preta (Comercial 1; cascas processadas e enriquecidas, vermiculita expandida, perlita expandida e turfa (Comercial 2; e casca de pínus compostada e vermiculita (Comercial 3 e três porta-enxertos: ("Trifoliata"; citrangeiro "C13" e limoeiro "Cravo". A irrigação foi feita por gotejamento. Avaliaram-se as seguintes variáveis: diâmetro do colo; altura da parte aérea; número de folhas e área foliar; matéria seca das raízes, da parte aérea e total; conteúdo de nutrientes nas folhas e percentual de porta-enxertos aptos à enxertia. A interpretação dos resultados revelou que o substrato com cascas processadas e enriquecidas, vermiculita expandida, perlita expandida e turfa possibilitou maior desenvolvimento vegetativo aos porta-enxertos utilizados, devido ao maior aporte de nutrientes. Os porta-enxertos mostraram desenvolvimento diferenciado, sendo que o citrangeiro "C13" tem potencial de uso para a diversificação de porta-enxertos na citricultura, devido ao seu desenvolvimento vegetativo.This research was aimed at evaluating the vegetative growth of citrus rootstocks produced in different commercial substrates and cultivated in four liters containers. The experiment was carried out in greenhouse conditions at the Estação Experimental Agronômica of the Universidade Federal do Rio Grande do Sul, from June 2003 to July 2004. Three commercial substrates [black peat (Commercial 1; processed and enriched husks, expanded vermiculite, expanded perlite and peat (Commercial 2; and (pinus

  16. Growth and characterization of GaN nanostructures under various ammoniating time with fabricated Schottky gas sensor based on Si substrate

    Science.gov (United States)

    Abdullah, Q. N.; Ahmed, A. R.; Ali, A. M.; Yam, F. K.; Hassan, Z.; Bououdina, M.; Almessiere, M. A.

    2018-05-01

    This paper presents the investigation of the influence of the ammoniating time of GaN nanowires (NWs) on the crystalline structure, surface morphology, and optical characteristics. Morphological analysis indicates the growth of good quality and high density of NWs with diameters around 50 nm and lengths up to tens of microns after ammoniating for 30 min. Structural analysis shows that GaN NWs have a typical hexagonal wurtzite crystal structure. Raman spectroscopy confirms the formation of GaN compound with the presence of compressive stress. Photoluminescence (PL) measurements revealed two band emissions, an UV and a broad visible emission. Hydrogen sensor was subsequently fabricated by depositing Pt Schottky contact onto GaN NWs film. The sensor response was measured at various H2 concentrations ranged from 200 up to 1200 ppm at room temperature. It was found that the response increases significantly for low H2 concentration (200-300 ppm) to reach about 50% then increases smoothly to reach 60% at 1200 ppm. The as-fabricated sensor possesses higher performances as compared to similar devices reported in the literature.

  17. Temperature effects on the growth and electrical properties of Er{sub 2}O{sub 3} films on Ge substrates

    Energy Technology Data Exchange (ETDEWEB)

    Ji, T.; Nie, T.X.; Cui, J. [State Key Laboratory of Surface Physics, Fudan University, Shanghai 200433 (China); Fang, Z.B. [Department of Physics, Shaoxing University, Shaoxing 312000 (China); Yang, X.J.; Fan, Y.L.; Zhong, Z.Y. [State Key Laboratory of Surface Physics, Fudan University, Shanghai 200433 (China); Jiang, Z.M., E-mail: zmjiang@fudan.edu.cn [State Key Laboratory of Surface Physics, Fudan University, Shanghai 200433 (China)

    2012-02-01

    Er{sub 2}O{sub 3} films were grown on Ge (001) substrates at different temperatures by molecular beam epitaxy using metallic Er and molecular oxygen sources with otherwise identical conditions. High-resolution transmission electron microscopy and X-ray photoelectron spectroscopy were used to characterize the microstructures and compositions of the films. The film deposited at room temperature is found to be composed of an Er{sub 2}O{sub 3} layer and an ErGe{sub x}O{sub y} interface layer with a thickness of 5.5 nm; the film grown at 300 Degree-Sign C has a mixed structure of Er{sub 2}O{sub 3} and ErGe{sub x}O{sub y} and the thickness was found to be reduced to 2.2 nm; the film grown at 450 Degree-Sign C becomes much rougher with voids formed underneath the film, having a mixed structure of three compounds of Er{sub 2}O{sub 3}, GeO and ErGe{sub x}O{sub y}. The growth mechanisms of the films at different temperatures are suggested. Current images obtained by tunneling atomic force microscopy show that the film grown at 450 Degree-Sign C has much more leaky spots than those grown at RT and 300 Degree-Sign C, which may arise from the formation of volatile GeO in the film.

  18. Preparation of thin hexagonal highly-ordered anodic aluminum oxide (AAO) template onto silicon substrate and growth ZnO nanorod arrays by electrodeposition

    Science.gov (United States)

    Chahrour, Khaled M.; Ahmed, Naser M.; Hashim, M. R.; Elfadill, Nezar G.; Qaeed, M. A.; Bououdina, M.

    2014-12-01

    In this study, anodic aluminum oxide (AAO) templates of Aluminum thin films onto Ti-coated silicon substrates were prepared for growth of nanostructure materials. Hexagonally highly ordered thin AAO templates were fabricated under controllable conditions by using a two-step anodization. The obtained thin AAO templates were approximately 70 nm in pore diameter and 250 nm in length with 110 nm interpore distances within an area of 3 cm2. The difference between first and second anodization was investigated in details by in situ monitoring of current-time curve. A bottom barrier layer of the AAO templates was removed during dropping the voltage in the last period of the anodization process followed by a wet etching using phosphoric acid (5 wt%) for several minutes at ambient temperature. As an application, Zn nanorod arrays embedded in anodic alumina (AAO) template were fabricated by electrodeposition. Oxygen was used to oxidize the electrodeposited Zn nanorods in the AAO template at 700 °C. The morphology, structure and photoluminescence properties of ZnO/AAO assembly were analyzed using Field-emission scanning electron microscope (FESEM), Energy dispersive X-ray spectroscopy (EDX), Atomic force microscope (AFM), X-ray diffraction (XRD) and photoluminescence (PL).

  19. Growth of simplified buffer template on flexible metallic substrates for YBa{sub 2}Cu{sub 3}O{sub 7-δ} coated conductors

    Energy Technology Data Exchange (ETDEWEB)

    Xue, Yan; Zhang, Ya-Hui; Zhang, Fei; Zhao, Rui-Peng [State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054 (China); Wang, Hui [Applied Research Laboratory of Superconduction and New Material, Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing, 100190 (China); Xiong, Jie, E-mail: jiexiong@uestc.edu.cn [State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054 (China); Tao, Bo-Wan [State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054 (China)

    2016-07-15

    A much simplified buffer structure, including a three-layer stack of LaMnO{sub 3}/MgO/composite Y{sub 2}O{sub 3}–Al{sub 2}O{sub 3}, was proposed for high performance YBa{sub 2}Cu{sub 3}O{sub 7-δ} (YBCO) coated conductors. In this structure, biaxially textured MgO films were prepared on solution deposition planarized amorphous substrate through ion-beam-assisted deposition (IBAD) technology. By the use of in situ reflection high-energy electron diffraction monitor, X-ray diffraction and atomic force microscope, the influence of deposition parameters, such as film deposition rate, ion penetrate energy and ion beam flux, on crystalline orientation, texture, lattice parameter and surface morphology was systematically investigated. Moreover, stopping and range of ion in mater simulation was performed to study the effects of ion bombardment on MgO films. By optimizing IBAD process parameters, the best biaxial texture showed ω-scan of (002) MgO and Φ-scan of (220) MgO yield full width at half maximum values of 2.4° and 3.7°, indicating excellent biaxial texture. Subsequently, LaMnO{sub 3} films were directly deposited on the IBAD-MgO template to improve the lattice mismatch between MgO and YBCO. Finally, YBCO films grown on this simplified buffer template exhibited a critical current density of 2.4 MA/cm{sup 2} at 77 K and self-field, demonstrating the feasibility of this buffer structure. - Highlights: • Simplified buffer structure for YBCO coated conductors. • Growth of biaxially textured MgO films on flexible amorphous substrates. • Studying the influence of film deposition rate, ion energy and ion beam flux on the development of biaxial texture. • Demonstrating highly oriented YBCO films with a critical current density of 2.4 MA/cm{sup 2} at self-field and 77 K.

  20. Growth

    Science.gov (United States)

    John R. Jones; George A. Schier

    1985-01-01

    This chapter considers aspen growth as a process, and discusses some characteristics of the growth and development of trees and stands. For the most part, factors affecting growth are discussed elsewhere, particularly in the GENETICS AND VARIATION chapter and in chapters in PART 11. ECOLOGY. Aspen growth as it relates to wood production is examined in the WOOD RESOURCE...

  1. Broad band exciplex dye lasers

    International Nuclear Information System (INIS)

    Dienes, A.; Shank, C.V.; Trozzolo, A.M.

    1975-01-01

    The disclosure is concerned with exciplex dye lasers, i.e., lasers in which the emitting species is a complex formed only from a constituent in an electronically excited state. Noting that an exciplex laser, favorable from the standpoint of broad tunability, results from a broad shift in the peak emission wavelength for the exciplex relative to the unreacted species, a desirable class resulting in such broad shift is described. Preferred classes of laser media utilizing specified resonant molecules are set forth. (auth)

  2. Extremely improved InP template and GaInAsP system growth on directly-bonded InP/SiO2-Si and InP/glass substrate

    International Nuclear Information System (INIS)

    Matsumoto, Keiichi; Makino, Tatsunori; Kimura, Katsuya; Shimomura, Kazuhiko

    2013-01-01

    We have developed an ultrathin InP template with low defect density on SiO 2 -Si and glass substrate by employing wet etching and wafer direct bonding technique. We have demonstrated epitaxial growth on these substrates and GaInAs/InP multiple quantum well layers were grown by low pressure metal-organic vapor-phase epitaxy. Photoluminescence measurements of the layers show that they are optically active and we have obtained almost the same intensity from these substrates compared to the InP substrate. These results may be attributed to improvement of InP template quality and should provide further improvements in device performance realized on SiO 2 -Si and glass substrate. And, these are promising results in terms of integration of InP-based several functional optical devices on SiO 2 -Si and glass substrate. (copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  3. Broad specificity dioxygenase enzymes and the bioremediation of hazardous aromatic pollutants

    International Nuclear Information System (INIS)

    Bonus, P.A.; Nies, L.

    1996-01-01

    The release of aromatic compounds to the environment is a major source of global pollution. In particular, the contamination of soil and groundwater with benzene, toluene, and xylenes (BTX) is the most ubiquitous form of aromatic pollution. The major source of BTX contamination is the release of gasoline and other petroleum products. This research focused on the improvement of bioremediation of BTX through a better understanding of broad specificity dioxygenase enzymes produced by soil and sediment bacteria. The investigation utilized pure bacterial strains isolated on biphenyl, naphthalene, or toluene. These isolated aerobic bacteria were then used to investigate the specificity of the initial enzymatic attack on aromatic compounds including BTX and polychlorinated biphenyls (PCBs). The enzymatic specificity and competency of the five isolates selected for study were determined through the use of growth tests and two rapid assay techniques. The growth tests were conducted on mineral agar plates or in liquid cultures, and they were used to determine substrate specificity. In addition, rapid assays for both BTX and PCBs were carried out using various growth substrates. These assays allowed further clarification of the specificity of the dioxygenase enzymes involved in aromatic degradation. Preliminary results of the PCB assay show that biphenyl and naphthalene isolated organisms grown on biphenyl, benzoate, naphthalene, and succinate maintain production of broad specificity dioxygenase enzymes able to degrade PCBs. Likewise, the BTX assay confirms that biphenyl and naphthalene selected organisms grown on their respective selection substrates completely degrade BTX including all three xylene isomers. In comparison, the toluene selected organism that was studied was unable to degrade PCBs, but it was able to degrade all BTX constituents

  4. Offshore Substrate

    Data.gov (United States)

    California Natural Resource Agency — This shapefile displays the distribution of substrate types from Pt. Arena to Pt. Sal in central/northern California. Originally this data consisted of seven paper...

  5. Growth and structural investigations of epitaxial hexagonal YMnO3 thin films deposited on wurtzite GaN(001) substrates

    International Nuclear Information System (INIS)

    Balasubramanian, K.R.; Chang, Kai-Chieh; Mohammad, Feroz A.; Porter, Lisa M.; Salvador, Paul A.; DiMaio, Jeffrey; Davis, Robert F.

    2006-01-01

    Epitaxial hexagonal YMnO 3 (h-YMnO 3 ) films having sharp (00l) X-ray diffraction peaks were grown above 700 deg. C in 5 mTorr O 2 via pulsed laser deposition both on as-received wurtzite GaN/AlN/6H-SiC(001) (w-GaN) substrates as well as on w-GaN surfaces that were etched in 50% HF solution. High-resolution transmission electron microscopy revealed an interfacial layer between film and the unetched substrate; this layer was absent in those samples wherein an etched substrate was used. However, the substrate treatment did not affect the epitaxial arrangement between the h-YMnO 3 film and w-GaN substrate. The epitaxial relationships of the h-YMnO 3 films with the w-GaN(001) substrate was determined via X-ray diffraction to be (001) YMnO 3 -parallel (001) GaN : [11-bar0] YMnO 3 -parallel [110] GaN ; in other words, the basal planes of the film and the substrate are aligned parallel to one another, as are the most densely packed directions in planes of the film and the substrate. Interestingly, this arrangement has a larger lattice mismatch than if the principal axes of the unit cells were aligned

  6. Investigations on Substrate Temperature-Induced Growth Modes of Organic Semiconductors at Dielectric/semiconductor Interface and Their Correlation with Threshold Voltage Stability in Organic Field-Effect Transistors.

    Science.gov (United States)

    Padma, Narayanan; Maheshwari, Priya; Bhattacharya, Debarati; Tokas, Raj B; Sen, Shashwati; Honda, Yoshihide; Basu, Saibal; Pujari, Pradeep Kumar; Rao, T V Chandrasekhar

    2016-02-10

    Influence of substrate temperature on growth modes of copper phthalocyanine (CuPc) thin films at the dielectric/semiconductor interface in organic field effect transistors (OFETs) is investigated. Atomic force microscopy (AFM) imaging at the interface reveals a change from 'layer+island' to "island" growth mode with increasing substrate temperatures, further confirmed by probing the buried interfaces using X-ray reflectivity (XRR) and positron annihilation spectroscopic (PAS) techniques. PAS depth profiling provides insight into the details of molecular ordering while positron lifetime measurements reveal the difference in packing modes of CuPc molecules at the interface. XRR measurements show systematic increase in interface width and electron density correlating well with the change from layer + island to coalesced huge 3D islands at higher substrate temperatures. Study demonstrates the usefulness of XRR and PAS techniques to study growth modes at buried interfaces and reveals the influence of growth modes of semiconductor at the interface on hole and electron trap concentrations individually, thereby affecting hysteresis and threshold voltage stability. Minimum hole trapping is correlated to near layer by layer formation close to the interface at 100 °C and maximum to the island formation with large voids between the grains at 225 °C.

  7. Growth behavior of Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} thin films on graphene substrate grown by plasma-enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Chang Wan [Thin Film Materials Research Group, Korea Research Institute of Chemical Technology, Daejeon (Korea, Republic of); School of Electrical and Electronic Engineering, Yonsei University, Seoul (Korea, Republic of); Kim, Gun Hwan; Kang, Min A.; An, Ki-Seok; Lee, Young Kuk [Thin Film Materials Research Group, Korea Research Institute of Chemical Technology, Daejeon (Korea, Republic of); Kang, Seong Gu [School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology, Gwangju (Korea, Republic of); Kim, Hyungjun [School of Electrical and Electronic Engineering, Yonsei University, Seoul (Korea, Republic of)

    2017-03-15

    A comparative study of the substrate effect on the growth mechanism of chalcogenide Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} thin films was carried out. Obvious microstructural discrepancy in both the as-deposited Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} thin films was observed when grown on graphene or SiO{sub 2}/Si substrate. Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} thin films deposited on the graphene substrate were observed to be grown epitaxially along c-axis and show very smooth surface compared to that on SiO{sub 2}/Si substrate. Based on the experimental results of this study, the initial adsorption sites on graphene substrate during deposition process, which had been discussed theoretically, could be demonstrated empirically. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  8. Cultured Representatives of Two Major Phylogroups of Human Colonic Faecalibacterium prausnitzii Can Utilize Pectin, Uronic Acids, and Host-Derived Substrates for Growth

    NARCIS (Netherlands)

    Lopez-Siles, Mireia; Khan, Tanweer M.; Duncan, Sylvia H.; Harmsen, Hermie J. M.; Garcia-Gil, L. Jesus; Flint, Harry J.

    Faecalibacterium prausnitzii is one of the most abundant commensal bacteria in the healthy human large intestine, but information on genetic diversity and substrate utilization is limited. Here, we examine the phylogeny, phenotypic characteristics, and influence of gut environmental factors on

  9. The properties of TiN ultra-thin films grown on SiO{sub 2} substrate by reactive high power impulse magnetron sputtering under various growth angles

    Energy Technology Data Exchange (ETDEWEB)

    Shayestehaminzadeh, S., E-mail: ses30@hi.is [Science Institute, University of Iceland, Dunhaga 3, IS-107 Reykjavik (Iceland); Tryggvason, T.K. [Science Institute, University of Iceland, Dunhaga 3, IS-107 Reykjavik (Iceland); Karlsson, L. [School of Engineering and Science, Jacobs University Bremen, Campus Ring 1, 28759 Bremen (Germany); Olafsson, S. [Science Institute, University of Iceland, Dunhaga 3, IS-107 Reykjavik (Iceland); Gudmundsson, J.T. [Science Institute, University of Iceland, Dunhaga 3, IS-107 Reykjavik (Iceland); University of Michigan-Shanghai Jiao Tong University, University Joint Institute, Shanghai Jiao Tong University, 800 Dong Chuan Road, Shanghai 200240 (China)

    2013-12-02

    Thin TiN films were grown on SiO{sub 2} by reactive high power impulse magnetron sputtering (HiPIMS) and conventional dc magnetron sputtering (dcMS) while varying the angle between the target and the substrate surface from 0° (on-axis growth) to 90° (off-axis growth). Surface morphology and structural characterization were carried out using X-ray diffraction and reflection methods and the film properties were compared. The dcMS process shows higher growth rate than the HiPIMS process for on-axis grown films but the dcMS growth rate drops drastically for off-axis growth while the HiPIMS growth rate decreases slowly with increased angle between target and substrate for off-axis growth and becomes comparable to the dcMS growth rate. The dcMS grown films exhibit angle dependence in the density and surface roughness while the HiPIMS process creates denser and smoother films that are less angle dependent in all aspects. It was observed that the HiPIMS grown films remain poly-crystalline for all angles of rotation while the dcMS grown films are somewhat amorphous after 60°. The [111] and [200] grain sizes are comparable to the total film thickness in the HiPIMS grown films for all angles of rotation. In the case of dcMS, the [111], [200] and [220] grain sizes are roughly of the same size and much smaller than the total thickness for all growth angles except at 60° and higher. - Highlights: • TiN films were grown on SiO{sub 2} by HiPIMS and dcMS under various growth angles. • Influence of growth angle α = 0–90° on deposition rate and film quality was studied. • The HiPIMS process produces denser and smoother films for all growth angles. • At α = 0°, the growth rate of HiPIMS is 25% of dcMS while it is 50% at 90°. • The HiPIMS grown films remain poly-crystalline for all growth angles.

  10. Growth of Low Defect Density Gallium Nitride (GaN) Films on Novel Tantalum Carbide (TaC) Substrates for Improved Device Performance

    Science.gov (United States)

    2009-05-01

    2 Figure 2. Schematic of a Schottky diode structure (a) grown on an insulating substrate such as sapphire that requires front side...an on-axis substrate at 1000 °C taken (a) at a high magnification and (b) in a region where micropores were observed. ..........8 Figure 5. The 5 x...is useful for vertical high power devices. It can also be made insulating by growing it in a very pure state, which is useful for lateral high

  11. Impact of substrate contamination with mycotoxins, heavy metals and pesticides on the growth performance and composition of black soldier fly larvae (Hermetia illucens) for use in the feed and food value chain.

    Science.gov (United States)

    Purschke, Benedict; Scheibelberger, Rafaela; Axmann, Sonja; Adler, Andreas; Jäger, Henry

    2017-08-01

    Edible insects have emerged as an alternative and sustainable source of high-quality, animal-derived protein and fat for livestock production or direct human nutrition. During the production of insects, substrate quality is a key parameter to assure optimal insect biomass gain as well as the safety of feed and food derived from commercially reared insects. Therefore, the influence of a realistic substrate contamination scenario on growth performance and accumulation behaviour of black soldier fly larvae (BSFL; Hermetia illucens L.) was investigated. Newly hatched larvae were fed on a corn-based substrate spiked with heavy metals (As, Cd, Cr, Hg, Ni, Pb), mycotoxins (aflatoxins B1/B2/G2, deoxynivalenol, ochratoxin A, zearalenone) and pesticides (chlorpyrifos, chlorpyrifos-methyl, pirimiphos-methyl) under defined breeding conditions (10 days, 28°C, 67% relative humidity). The extent of contaminants' bioaccumulation in the larval tissue as well as the effect on growing determinants were examined. The applied heavy metal substrate contamination was shown to impair larval growing indicated by significantly lower post-trial larval mass and feed conversion ratio (FCR). Cd and Pb accumulation factors of 9 and 2, respectively, were determined, while the concentrations of other heavy metals in the larvae remained below the initial substrate concentration. In contrast, mycotoxins and pesticides have neither been accumulated in the larval tissue nor significantly affected the growing determinants in comparison with the control. The use of BSFL as livestock feed requires contaminant monitoring - especially for Cd and Pb - in the substrates as well as in feedstuff containing BSFL to ensure feed and food safety along the value chain.

  12. PRODUCTION AND OPTIMIZATION OF GROWTH CONDITIONS FOR INVERTASE ENZYME BY ASPERGILLUS SP., IN SOLID STATE FERMENTATION (SSF USING PAPAYA PEEL AS SUBSTRATE

    Directory of Open Access Journals (Sweden)

    Brindha Chelliappan

    2013-12-01

    Full Text Available Invertase enzymes are produced mainly by plants, some filamentous fungi, yeast and many other microorganisms which finds applications in food industries, confectionaries, pharmaceuticals, etc., The present work deals with the production of Invertase by Aspergillus sp., isolated from various soil samples in solid state fermentation using papaya peel waste as substrate. Enzyme activity was checked using Fehling’s reagent and assay was carried out by DNSA method. The results of optimized conditions showed that the invertase activity was high in the SSF using papaya peel as substrate, incubated for 6 days at temperature of 35°C, pH 7, with 2.25gms/100ml of Ammonium nitrate as nitrogen source and 10gms/100ml of sucrose as carbon source. Hence the agro wastes from industries can be recycled by using it as substrate in SSF for high invertase enzyme production which finds applications in many fields.

  13. Influence of substrate biasing on the growth of c-axis oriented AlN thin films by RF reactive sputtering in pure nitrogen

    Energy Technology Data Exchange (ETDEWEB)

    Monteagudo-Lerma, L.; Naranjo, F.B.; Gonzalez-Herraez, M. [Departamento de Electronica, Escuela Politecnica, Universidad de Alcala, Campus Universitario, 28871 Alcala de Henares (Spain); Fernandez, S. [Departamento de Energias Renovables, Energia Solar Fotovoltaica, Centro de Investigaciones Energeticas, Medioambientales y Tecnologicas (CIEMAT), Avda. Complutense 22, 28040 Madrid (Spain)

    2012-03-15

    We report on the investigation of the influence of deposition conditions on structural, morphological and optical properties of AlN thin films deposited on sapphire (Al{sub 2}O{sub 3}) substrates by radio-frequency (RF) reactive sputtering. The deposition parameters studied are RF power, substrate temperature and substrate bias, while using pure nitrogen as reactive gas. The effect of such deposition parameters on AlN film properties are analyzed by different characterization methods as high resolution X-ray diffraction (HRXRD), field emission scanning electron microscopy (FESEM) and linear optical transmission. AlN thin films with a full-width at half-maximum (FWHM) of the rocking curve obtained for the (0002) diffraction peak of 1.2 are achieved under optimized conditions. The time resolved evolution of the self and externally-induced biasing of the substrate during deposition process is monitored and analyzed in terms of the rate of atomic species incorporation into the layer. The bias-induced change of the atomic incorporation leads to an enhancement in the structural quality of the layer and an increase of the deposition rate. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  14. Influence of substrate treatment on the growth of advanced core–shell alloys and compounds of FeSi@SiO2 and SiO2 nanowires

    CSIR Research Space (South Africa)

    Thabethe, S

    2014-12-01

    Full Text Available Advanced core–shell FeSi@SiO(subx) nanowires are observed when FeCl(sub3) vapour is made to flow over a SiO(sub2)/Si substrate at 1100 degress C. The thickness of the SiO(subx) sheath (d0) is found to depend inversely as the period of time of HF...

  15. Maintenance-energy-dependent dynamics of growth and poly(3-hydroxybutyrate) [P(3HB)] production by Azohydromonas lata MTCC 2311 using simple and renewable carbon substrates

    OpenAIRE

    Zafar,M.; Kumar,S.; Kumar,S.; Dhiman,A. K.; Park,H.-S.

    2014-01-01

    The dynamics of microbial growth and poly(3-hydroxybutyrate) [P(3HB)] production in growth/ non-growth phases of Azhohydromonas lata MTCC 2311 were studied using a maintenance-energy-dependent mathematical model. The values of calculated model kinetic parameters were: m s1 = 0.0005 h-1, k = 0.0965, µmax = 0.25 h-1 for glucose; m s1 = 0.003 h-1, k = 0.1229, µmax = 0.27 h-1 for fructose; and m s1 = 0.0076 h-1, k = 0.0694, µmax = 0.25 h-1 for sucrose. The experimental data of biomass growth, sub...

  16. Multifunctional epitaxial systems on silicon substrates

    Energy Technology Data Exchange (ETDEWEB)

    Singamaneni, Srinivasa Rao, E-mail: ssingam@ncsu.edu [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Materials Science Division, Army Researc