WorldWideScience

Sample records for broad area diode

  1. Two photon absorption in high power broad area laser diodes

    Science.gov (United States)

    Dogan, Mehmet; Michael, Christopher P.; Zheng, Yan; Zhu, Lin; Jacob, Jonah H.

    2014-03-01

    Recent advances in thermal management and improvements in fabrication and facet passivation enabled extracting unprecedented optical powers from laser diodes (LDs). However, even in the absence of thermal roll-over or catastrophic optical damage (COD), the maximum achievable power is limited by optical non-linear effects. Due to its non-linear nature, two-photon absorption (TPA) becomes one of the dominant factors that limit efficient extraction of laser power from LDs. In this paper, theoretical and experimental analysis of TPA in high-power broad area laser diodes (BALD) is presented. A phenomenological optical extraction model that incorporates TPA explains the reduction in optical extraction efficiency at high intensities in BALD bars with 100μm-wide emitters. The model includes two contributions associated with TPA: the straightforward absorption of laser photons and the subsequent single photon absorption by the holes and electrons generated by the TPA process. TPA is a fundamental limitation since it is inherent to the LD semiconductor material. Therefore scaling the LDs to high power requires designs that reduce the optical intensity by increasing the mode size.

  2. V-shaped resonators for addition of broad-area laser diode arrays

    Science.gov (United States)

    Liu, Bo; Liu, Yun; Braiman, Yehuda Y.

    2012-12-25

    A system and method for addition of broad-area semiconductor laser diode arrays are described. The system can include an array of laser diodes, a V-shaped external cavity, and grating systems to provide feedback for phase-locking of the laser diode array. A V-shaped mirror used to couple the laser diode emissions along two optical paths can be a V-shaped prism mirror, a V-shaped stepped mirror or include multiple V-shaped micro-mirrors. The V-shaped external cavity can be a ring cavity. The system can include an external injection laser to further improve coherence and phase-locking.

  3. A new approach to assymmetric feedback in a segmented broad area diode laser

    DEFF Research Database (Denmark)

    Jensen, Ole Bjarlin; Thestrup Nielsen, Birgitte; Petersen, Paul Michael

    2009-01-01

    We present the demonstration of a non-critical setup for asymmetric feedback in a segmented broad area diode laser. We compare the dependence of the beam quality on the position of the dispersive element for standard spectral beam combining and our new non-critical setup. We find that our new...

  4. In-phase output beam from broad-area diode array using Talbot cavity

    Institute of Scientific and Technical Information of China (English)

    Pengfei Zhao; Qiang Li; Weirong Guo; Bo Liu; Tiechuan Zuo

    2007-01-01

    The robust phase locking of a linear diode array consisting of 49 broad-area emitters was demonstrated.The single lobe in the far field with output power of 0.83 W was observed. The far-field divergence was reduced to 2.0 mrad. The spectral bandwidth was reduced from 1.7 to 0.13 nm.

  5. Brilliant high-power diode lasers based on broad area lasers

    Science.gov (United States)

    Krause, V.; Koesters, A.; Koenig, H.; Strauss, U.

    2008-02-01

    Within the German national research project "Briolas" Osram Semiconductors and Laserline GmbH cooperated in the subproject "Brilasi" which focused mainly on Brilliant Laser Diodes for Industrial Applications. The project was finished in December 2007 and lasted more than three years. Laserline and Osram are investigating the performance of broad area diode lasers with a bar width from 1.0 to 10.0 mm in high brilliance diode laser beam sources. Within the program different fibre coupled laser sources are built up: 1. Fibre coupled diode laser beam source with a Beam Parameter Product (BBP) of 40 mmxmrad built from diode laser bars with 10 mm bar width. 2. Fibre coupled diode laser beam source with a BBP of 20 mmxmrad built from Mini-Bars with a bar width of 3.0 mm and 8 emitters. These Different solutions are characterized regarding the electro optical performance. The laser output characteristics are determined for the diode laser device as well as the complete beam source. Lifetime tests are conducted to determine the long term stability of the prototypes and the different chip material.

  6. A comprehensive model of catastrophic optical-damage in broad-area laser diodes

    Science.gov (United States)

    Chin, A. K.; Bertaska, R. K.; Jaspan, M. A.; Flusberg, A. M.; Swartz, S. D.; Knapczyk, M. T.; Petr, R.; Smilanski, I.; Jacob, J. H.

    2009-02-01

    The present model of formation and propagation of catastrophic optical-damage (COD), a random failure-mode in laser diodes, was formulated in 1974 and has remained substantially unchanged. We extend the model of COD phenomena, based on analytical studies involving EBIC (electron-beam induced current), STEM (scanning transmission-electron microscopy) and sophisticated optical-measurements. We have determined that a ring-cavity mode, whose presence has not been previously reported, significantly contributes to COD initiation and propagation in broad-area laser-diodes.

  7. Improved spectral characteristics of 980 nm broad area slotted Fabry-Perot diode lasers

    Institute of Scientific and Technical Information of China (English)

    Gao Zhuo; Wang Jun; Xiong Cong; Liu Yuanyuan; Liu Suping; Ma Xiaoyu

    2012-01-01

    A novel broad area slotted Fabry-Perot diode laser is designed and fabricated.Using a new semianalytical method,we introduce effective refractive index perturbations in the form of etched slot features into a conventional 980 nm broad area Fabry-Perot cavity,and the spectral characteristics of the device are expected to be noticeably improved.A low density of slot features is formed by using standard optical lithography and inductively coupled plasma dry etching.The experimental results show that the full spectral width at half-maximum is less than 0.4 nm,meanwhile,the thermal shift of the emission spectrum is decreased from 0.26 to 0.07 nm/℃ over a temperature range of 10 to 60 ℃.The improved spectral characteristics of the device are proved to be attributed to such slotted Fabry-Perot laser structures.

  8. Rational Chebyshev spectral transform for the dynamics of broad-area laser diodes

    International Nuclear Information System (INIS)

    This manuscript details the use of the rational Chebyshev transform for describing the transverse dynamics of broad-area laser diodes and amplifiers. This spectral method can be used in combination with the delay algebraic equations approach developed in [1], which substantially reduces the computation time. The theory is presented in such a way that it encompasses the case of the Fourier spectral transform presented in [2] as a particular case. It is also extended to the consideration of index guiding with an arbitrary transverse profile. Because their domain of definition is infinite, the convergence properties of the Chebyshev rational functions allow handling the boundary conditions with higher accuracy than with the previously studied Fourier transform method. As practical examples, we solve the beam propagation problem with and without index guiding: we obtain excellent results and an improvement of the integration time between one and two orders of magnitude as compared with a fully distributed two dimensional model

  9. Spectral properties of a broad-area diode laser with off-axis external-cavity feedback

    DEFF Research Database (Denmark)

    Chi, Mingjun; Petersen, Paul Michael

    2013-01-01

    intensity noise spectrum of the diode laser shows that the intensity noise is increased strongly by the external-cavity feedback. External-cavity modes are excited in the external cavity even in the off-axis configuration. The peak spacing of the intensity noise spectrum shows that single roundtrip external......Spectral properties, both the optical spectrum and the intensity noise spectrum, of a broad-area diode laser with off-axis external-cavity feedback are presented. We show that the optical spectrum of the diode laser system is shifted to longer wavelengths due to the external-cavity feedback. The......-cavity modes are excited. We believe that the four-wave mixing process in the broad-area diode laser is responsible for the establishment of the external-cavity mode....

  10. Near-diffraction-limited segmented broad area diode laser based on off-axis spectral beam combining

    DEFF Research Database (Denmark)

    Jensen, O.B.; Thestrup Nielsen, Birgitte; Andersen, Peter E.;

    2006-01-01

    The beam quality of a 500-mu m-wide broad area diode laser with five active segments has been improved beyond the beam quality of the individual segments. The principle of this new laser system is based on off-axis feedback in combination with spectral beam combining. By using a double......-feedback scheme we are able to improve the beam quality of the laser by a factor of 23 from M-2 = 55 for the free-running diode laser to M-2 = 2.4 for the laser with feedback at a drive current of 2.2 A. The improved M-2 value is a factor of 3.4 below M-2 = 8.2 for a single free-running segment. This is the first...... time that the beam quality of a segmented broad area diode laser has been improved beyond the beam quality of the individual segments....

  11. Improvement of the beam quality of a broad-area diode laser using double feedback from two external mirrors

    DEFF Research Database (Denmark)

    Chi, M.; Bøgh, A.-S.; Thestrup, B.;

    2004-01-01

    In this letter, a symmetric double-feedback configuration, to improve the beam quality of broad-area diode lasers is demonstrated. With this configuration, a symmetric double-lobed far field can be obtained, and this configuration leads to good beam quality. The beam quality factor M-2 of a diode...... laser with the emitting area 1 mumx200 mum is improved by using both the asymmetric single feedback and the symmetric double feedback. M-2 values of 4.3 for the asymmetric single-feedback laser system and 3.3 for the symmetric double-feedback laser system are obtained, whereas the M-2 value...... of the freely running laser is 42. The far and the near fields are also measured and compared for the three conditions. (C) 2004 American Institute of Physics....

  12. Dynamics of a broad-area diode laser with lateral-mode-selected long-cavity feedback

    DEFF Research Database (Denmark)

    Chi, Mingjun; Petersen, Paul Michael

    2014-01-01

    The temporal dynamics of a broad-area diode laser with lateral-mode-selected long-cavity feedback is studied experimentally. Different dynamics are observed when different lateral modes are selected. When the feedback mirror is aligned perfectly and high-order modes are selected, in most....... When the feedback mirror is aligned non-perfectly, pulse-package oscillation is observed, for the first time to our knowledge, in a diode laser with long-cavity feedback....... of the cases, the output of the laser shows a periodic oscillation corresponding to a single roundtrip external-cavity loop, but the dynamic behavior disappears in some case; when the zero-order lateral-mode is selected, periodic oscillation corresponding to a double roundtrip external-cavity loop is observed...

  13. Achieving single-lobed far-field patterns of broad area laser diode with external cavity feedback

    Institute of Scientific and Technical Information of China (English)

    Jianhong Ge(葛剑虹); Jun Chen(陈军); Andreas Hermerschmidt; H.J.Eichler

    2003-01-01

    We demonstrate a technique for single transverse mode operation of high-power broad area laser diode(BAL). In the experiment, the HR mirror is used as an external cavity mirror and the grating is used as a wavelength selective component. By tiling the HR mirror and the grating, the number of transverse modes oscillating in the cavity can be limited and the spectral bandwidth of the laser diode can be reduced. A single-lobed near diffraction-limited laser beam with the beam divergence (FWHM) of 0.43°, the spectral line-width of 0.7 nm and the output power of 350 mW are obtained. With the feedback, the power density of the output laser beam is increased 6 times in comparison with the free running.

  14. Improvement of the beam quality of a diode laser with two active broad-area segments

    DEFF Research Database (Denmark)

    Chi, Mingjun; Thestrup, B.; Mortensen, J.L.;

    2003-01-01

    The beam quality of a diode laser with two active segments was improved using an external cavity with collimating optics, a grating, and an output coupler. The beam quality of the output beam, which is the first-order diffractive beam from the grating, was improved by a factor of 2, and at least...... half of the freely running power of the laser was coupled out from the external cavity. The output power can be enhanced further by the feedback from the zeroth-order beam. The possibility of improving the beam quality further is discussed and a new double-external-cavity configuration is suggested....

  15. Highly efficient broad-area blue and white light-emitting diodes on bulk GaN substrates

    Energy Technology Data Exchange (ETDEWEB)

    Vampola, Kenneth J.; Fellows, Natalie N.; Masui, Hisashi; Chung, Roy B.; Sato, Hitoshi; Sonoda, Junichi; Hirasawa, Hirohiko; Iza, Michael; Nakamura, Shuji [Materials Department, University of California, Santa Barbara, California (United States); Brinkley, Stuart E.; Furukawa, Motoko [Electrical and Computer Engineering Department, University of California, Santa Barbara, California (United States); DenBaars, Steven P. [Materials Department, University of California, Santa Barbara, California (United States)]|[Electrical and Computer Engineering Department, University of California, Santa Barbara, California (United States)

    2009-02-15

    Highly efficient light emitting diodes (LEDs) with peak emission wavelengths of nominally 450 nm were grown, fabricated and tested. The growth was performed by metal organic chemical vapour deposition. The LEDs were grown on c-plane (0001) bulk GaN substrates and fabricated into broad-area devices with active area 0.01 cm{sup 2}. Considerations were made to improve extraction efficiency, including transparent contacts, suspended mirror-less packaging and encapsulation in a truncated pyramid optic. These factors resulted in LEDs with high peak external quantum efficiency and reduced efficiency droop. The output power and external quantum efficiency at 20 mA were 38.5 mW and 68.9%. At 100 mA, they were 170 mW and 60.9%. White LEDs were fabricated by application of a yellow phosphor to the blue LEDs. The white LED luminous flux and efficacy at 20 mA was 9.6 lm and 128 lm/W. The chromaticity coordinates and correlated colour temperature were (0.348 K, 0.378 K) and 4998 K. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  16. Assessing the influence of the vertical epitaxial layer design on the lateral beam quality of high-power broad area diode lasers

    Science.gov (United States)

    Winterfeldt, M.; Rieprich, J.; Knigge, S.; Maaßdorf, A.; Hempel, M.; Kernke, R.; Tomm, J. W.; Erbert, G.; Crump, P.

    2016-03-01

    GaAs-based high-power broad-area diode lasers deliver optical output powers Popt > 10W with efficiency > 60%. However, their application is limited due to poor in-plane beam parameter product BPPlat=0.25×Θ95%×w95% (Θ95% and w95% are emission angle and aperture, 95% power content). We present experimental investigations on λ = 9xx nm broad area lasers that aim to identify regulating factors of the BPPlat connected to the epitaxial layer design. First, we assess the thermal lens of vertical designs with varying asymmetry, using thermal camera images to determine its strength. Under study are an extreme-double-asymmetric (EDAS) vertical structure and a reference (i.e. more symmetric) design. The lateral thermal profiles clearly show that BPPlat increase is correlated to the bowing of the thermal lens. The latter is derived out of a quadratic temperature fit in the active region beneath the current injection of the laser device and depends on the details of the epitaxial layers. Second, we test the benefit of low modal gain factor Γg0, predicted to improve BPPlat via a suppression of filamentation. EDAS-based lasers with single quantum well (SQW) and double quantum well (DQW) active regions were compared, with 2.5x reduced Γg0, for 2.2x reduced filament gain. However, no difference is seen in measured BPPlat, giving evidence that filamentary processes are no longer a limit. In contrast, devices with lower Γg0 demonstrate an up to twofold reduced near field modulation depth, potentially enabling higher facet loads and increased device facet reliability, when operated near to the COD limit.

  17. High Power 940 nm Al-free Active Region Laser Diodes and Bars with a Broad Waveguide

    Institute of Scientific and Technical Information of China (English)

    FANG Gaozhan; XIAO Jianwei; MA Xiaoyu; XU Zuntu; ZHANG Jinming; TAN Manqing; LIU Zongshun; LIU Suping; FENG Xiaoming

    2002-01-01

    The 940 nm Al-free active region laser diodes and bars with a broad waveguide were designed and fabricated. The stuctures were grown by metal organic chemical vapour deposition. The devices show excellent performances. The maximum output power of 6.7 W in the 100 μm broad-area laser diodes has been measured, and is 2.5 times higher than that in the Al-containing active region laser diodes with a narrow waveguide and 1.7 times higher than that in Al-free active region laser diodes with a narrow waveguide. The 19% fill-factor laser diode bars emit 33 W, and they can operate at 15W with low degradation rates.

  18. Folded cavity angled-grating broad-area lasers.

    Science.gov (United States)

    Zhao, Yunsong; Zhu, Lin

    2013-10-01

    The angled-grating broad-area laser is a promising candidate for high power, high brightness diode laser source. The key point in the design is the angled gratings which can simultaneously support the unique snake-like zigzag lasing mode and eliminate the direct Fabry-Perot (FP) feedback. Unlike a conventional laser waveguide mode, the phase front of the zigzag mode periodically changes along the propagation direction. By use of the mirror symmetry of the zigzag mode, we propose and demonstrate the folded cavity angled-grating broad-area lasers. One benefit of this design is to reduce the required wafer space compared to a regular angled-grating broad-area laser, especially in a long cavity laser for high power operation. Experimental results show that the folded cavity laser exhibits good beam quality in far field with a slightly larger threshold and smaller slope efficiency due to the additional interface loss.

  19. A low-temperature external cavity diode laser for broad wavelength tuning

    OpenAIRE

    Tobias, William G.; Rosenberg, Jason S.; Hutzler, Nicholas R.; Ni, Kang-Kuen

    2016-01-01

    We report on the design and characterization of a low-temperature external cavity diode laser (ECDL) system for broad wavelength tuning. The performance achieved with multiple diode models addresses the scarcity of commercial red laser diodes below 633 nm, which is a wavelength range relevant to spectroscopy of many molecules and ions. Using a combination of multiple-stage thermoelectric cooling and water cooling, the operating temperature of a laser diode is lowered to -64{\\deg}C, more than ...

  20. Rapid and broad wavelength sweeping of standard telecommunication distributed feedback laser diode.

    Science.gov (United States)

    Njegovec, Matej; Donlagic, Denis

    2013-06-01

    This Letter presents a method for the fast and broad wavelength sweeping of a standard setup of a diode's active region and its immediate vicinity, which contain the diode's optical feedback system. The selective and rapid heating of the active region is possible due to the confinement of the voltage drop to the active diode's region that has submicrometer thickness. Using the presented method and an off-the-shelf telecommunication distributed feedback laser diode, we demonstrate wavelength sweeps in excess of 10 nm that were completed in about 200 ns, while generating average optical power in excess of 50 mW. In spite of high-amplitude current-drive pulses, 6000 h continuous operation of the diode within such an operational regime did not show any significant degradation of the diode's performance.

  1. A nonlinear theory of a coherent generation in the resonant tunnel diodes within a broad frequency range

    International Nuclear Information System (INIS)

    Numerical solution to the Schroedinger equation with open boundary conditions is found out, which makes it possible to describe coherent generation in resonant-tunneling diodes in a broad interval of frequencies and field amplitudes. Within the linear field area approximation results obtained coincide with a high degree of accuracy with analytical results. The power of generation is calculated as a function of the current and other parameters of the resonant-tunneling diode. It is demonstrated that the high-power generation is possible in the quantum regime at frequencies exceeding the level width, i. e. within the THz range

  2. Broad Spectrum Photoelectrochemical Diodes for Solar Hydrogen Generation

    Energy Technology Data Exchange (ETDEWEB)

    Grimes, Craig A.

    2014-11-26

    Under program auspices we have investigated material chemistries suitable for the solar generation of hydrogen by water photoelectrolysis. We have built upon, and extended, our knowledge base on the synthesis and application of TiO2 nanotube arrays, a material architecture that appears ideal for water photoelectrolysis. To date we have optimized, refined, and greatly extended synthesis techniques suitable for achieving highly ordered TiO2 nanotube arrays of given length, wall thickness, pore diameter, and tube-to-tube spacing for use in water photoelectrolysis. We have built upon this knowledge based to achieve visible light responsive, photocorrosion stable n-type and p-type ternary oxide nanotube arrays for use in photoelectrochemical diodes.

  3. A low-temperature external cavity diode laser for broad wavelength tuning

    CERN Document Server

    Tobias, William G; Hutzler, Nicholas R; Ni, Kang-Kuen

    2016-01-01

    We report on the design and characterization of a low-temperature external cavity diode laser (ECDL) system for broad wavelength tuning. The performance achieved with multiple diode models addresses the scarcity of commercial red laser diodes below 633 nm, which is a wavelength range relevant to spectroscopy of many molecules and ions. Using a combination of multiple-stage thermoelectric cooling and water cooling, the operating temperature of a laser diode is lowered to -64{\\deg}C, more than 85{\\deg}C below the ambient temperature. The laser system integrates temperature and diffraction grating feedback tunability for coarse and fine wavelength adjustments, respectively. For two different diode models, single-mode operation was achieved with 38 mW output power at 616.8 nm and 69 mW at 622.6 nm, more than 15 nm below their ambient temperature free-running wavelengths. The ECDL design can be used for diodes of any available wavelength, allowing individual diodes to be tuned continuously over tens of nanometers ...

  4. Large area electron beam diode development

    International Nuclear Information System (INIS)

    A large area annular electron beam diode has been tested at Physics International Co. on the multi-terawatt PITHON generator. A twelve element post hole convolute converted the coaxial MITL into a triaxial arrangement of anode current return structures both inside and outside the cathode structure. The presence of both inner and outer current return paths provide magnetic pressure balance for the beam, as determined by diode current measurements. X-ray pinhole photographs indicated uniform emission with intensity maxima between the post positions. Current losses in the post hole region were negligible, as evidenced by the absence of damage to the aluminum hardware. Radial electron flow near the cathode ring however did damage the inner anode cylinder between the post positions. Cutting away these regions prevented further damage of the transmission lines

  5. Packaging and Performance of 980nm Broad Area Semiconductor Lasers

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    High power broad area semiconductor lasers have found increasing applications in pumping of solid state laser systems and fiber amplifiers, frequency doubling, medical systems and material processing.Packaging including the assembly design, process and thermal management, has a significant impact on the optical performance and reliability of a high power broad area laser. In this paper, we introduce the package structures and assembling process of 980nm broad area lasers and report the performances including output power, thermal behavior and far fields.We will report two types of high power broad area laser assemblies.One is a microchannel liquid cooled assembly and the other is a conduction cooled CT-mount assembly. Optical powers of 15W and 10W were achieved from a 980nm broad area laser with a 120 μ m stripe width in a microchannel liquid cooled assembly and conduction cooled CT-mount assembly, respectively.Furthermore,a high power of 6.5W out of fiber was demonstrated from a pigtailed, fully packaged butterfly-type module without TEC (Thermoelectric cooler).The measurement results showed that thermal management is the key in not only improving output power, but also significantly improving beam divergence and far field distribution.The results also showed that the die attach solder can significant impact the reliability of high power broad area lasers and that indium solder is not suitable for high power laser applications due to electromigration at high current densities and high temperatures.

  6. Gain optimization method of a DQW superluminescent diode with broad multi-state emission

    KAUST Repository

    Dimas, Clara E.

    2010-01-01

    Optimizing gain through systematic methods of varying current injection schemes analytically is significant to maximize experimentally device yield and evaluation. Various techniques are used to calculate the amplified spontaneous emission (ASE) gain for light emitting devices consisting of single-section and multiple-sections of even length. Recently double quantum well (DQW) superluminescent diodes (SLD) have shown a broad multi-state emission due to mutlielectrodes of non-equal lengths and at high non-equal current densities. In this study, we adopt an improved method utilizing an ASE intensity ratio to calibrate a gain curve based on the sum of the measured ASE spectra to efficiently estimate the gain. Although the laser gain for GaAs/AlGaAs material is well studied, the ASE gain of SLD devices has not been systematically studied particular to further explain the multiple-state emission observed in fabricated devices. In addition a unique gain estimate was achieved where the excited state gain clamps prior to the ground state due to approaching saturation levels. In our results, high current densities in long sectioned active regions achieved sufficient un-truncated gain that show evidence of excited state emission has been observed.

  7. Variable-area resonant tunnelling diodes using implanted gates

    International Nuclear Information System (INIS)

    A new fabrication technique is reported for variable-area resonant tunnelling diodes in which control is achieved by means of a reverse-biased, implanted pn junction surrounding the device. The characteristics of such devices are shown and interpreted. (author)

  8. High-Performance 1.55-µm Superluminescent Diode Based on Broad Gain InAs/InGaAlAs/InP Quantum Dash Active Region

    KAUST Repository

    Khan, Mohammed Zahed Mustafa

    2014-08-01

    We report on the high-performance characteristics from superluminescent diodes (SLDs) based on four-stack InAs/InGaAlAs chirped-barrier thickness quantum dash (Qdash) in a well structure. The active region exhibits a measured broad gain spectrum of 140 nm, with a peak modal gain of ~41 cm-1. The noncoated two-section gainabsorber broad-area and ridge-waveguide device configuration exhibits an output power of > 20 mW and > 12 mW, respectively. The corresponding -3-dB bandwidths span ~82 nm and ~72 nm, with a small spectral ripple of <; 0.2 dB, related largely to the contribution from dispersive height dash ensembles of the highly inhomogeneous active region. These C-L communication band devices will find applications in various cross-disciplinary fields of optical metrology, optical coherent tomography, etc.

  9. A broad area electrospray generated by a piezoelectric transformer

    Science.gov (United States)

    Ramshani, Zeinab; Johnson, Michael J.; Atashbar, Massood Z.; Go, David B.

    2016-07-01

    Electrosprays are typically formed by the application of a high (kilovolt) voltage to the flow exiting a small diameter capillary, and they have been used in applications ranging from material synthesis to spray coating because of the finely controlled plume of micron-sized droplets they produce. In this work, we report a similar but distinct spray directly off the surface of a piezoelectric transformer. Using a paper wick to deliver liquid to the surface of the piezoelectric crystal, a continuous, broad area spray is generated from the wick in contact with the transformer surface, only requiring input voltages on the order of 20 Vamp. Systematic variation of critical parameters indicate that this piezoelectric transformer-generated spray is similar to a conventional electrospray, with the spray current exhibiting a non-linear dependence on the solution conductivity, but distinct, as the spray exhibits little dependence on the solution surface tension. This innovative spray could potentially lead to uniform, large area spray coverage from a single device for a wide variety of applications.

  10. An asymmetric broad waveguide structure for a 0.98-μm high-conversion-efficiency diode laser

    Institute of Scientific and Technical Information of China (English)

    Chong Feng; Wang Jun; Xiong Cong; Wang Cuiluan; Han Lin; Wu Peng; Wang Guan; Ma Xiaoyu

    2009-01-01

    A novel asymmetric broad waveguide diode laser structure was designed for high power conversion efficiency (PCE). The internal quantum efficiency, the series resistance, and the thermal resistance were theoretically optimized. The series resistance and the thermal resistance were greatly decreased by optimizing the thickness of the P-waveguide and the P-cladding layers. The internal quantum efficiency was increased by introducing a novel strain-compensated GaAs0.9P0.1/InGaAs quantum well. Experimentally, a single 1-cm bar with 20% fill factor and 900 μm cavity length was mounted P-side down on a microchannel-cooled heatsink, and a peak PCE of 60% is obtained at 26.3-W continuous wave output power. The results prove that this novel asymmetric waveguide structure design is an efficient approach to improve the PCE.

  11. Highly-reliable operation of 638-nm broad stripe laser diode with high wall-plug efficiency for display applications

    Science.gov (United States)

    Yagi, Tetsuya; Shimada, Naoyuki; Nishida, Takehiro; Mitsuyama, Hiroshi; Miyashita, Motoharu

    2013-03-01

    Laser based displays, as pico to cinema laser projectors have gathered much attention because of wide gamut, low power consumption, and so on. Laser light sources for the displays are operated mainly in CW, and heat management is one of the big issues. Therefore, highly efficient operation is necessitated. Also the light sources for the displays are requested to be highly reliable. 638 nm broad stripe laser diode (LD) was newly developed for high efficiency and highly reliable operation. An AlGaInP/GaAs red LD suffers from low wall plug efficiency (WPE) due to electron overflow from an active layer to a p-cladding layer. Large optical confinement factor (Γ) design with AlInP cladding layers is adopted to improve the WPE. The design has a disadvantage for reliable operation because the large Γ causes high optical density and brings a catastrophic optical degradation (COD) at a front facet. To overcome the disadvantage, a window-mirror structure is also adopted in the LD. The LD shows WPE of 35% at 25°C, highest record in the world, and highly stable operation at 35°C, 550 mW up to 8,000 hours without any catastrophic optical degradation.

  12. High packing density laser diode stack arrays using Al-free active region laser bars with a broad waveguide and discrete copper microchannel-cooled heatsinks

    Institute of Scientific and Technical Information of China (English)

    Zhigang Liu; Gaozhan Fang; Kecheng Feng

    2009-01-01

    A high packing density laser diode stack array is developed utilizing Al-free active region laser bars with a broad waveguide and discrete copper microchannel-cooled heatsinks. The microchannel cooling technology leads to a 10-bar laser diode stack array having the thermal resistance of 0.199 ℃/W, and enables the device to be operated under continuous-wave (CW) condition at an output power of 1200 W. The thickness of the discrete copper heatsink is only 1.5 mm, which results in a high packing density and a small bar pitch of 1.8 mm.

  13. Thick and large area PIN diodes for hard X-ray astronomy

    CERN Document Server

    Ota, N; Sugizaki, M; Kaneda, M; Tamura, T; Ozawa, H; Kamae, T; Makishima, K; Takahashi, T; Tashiro, M; Fukazawa, Y; Kataoka, J; Yamaoka, K; Kubo, S; Tanihata, C; Uchiyama, Y; Matsuzaki, K; Iyomoto, N; Kokubun, M; Nakazawa, T; Kubota, A; Mizuno, T; Matsumoto, Y; Isobe, N; Terada, Y; Sugiho, M; Onishi, T; Kubo, H; Ikeda, H; Nomachi, M; Ohsugi, T; Muramatsu, M; Akahori, H

    1999-01-01

    Thick and large area PIN diodes for the hard X-ray astronomy in the 10-60 keV range are developed. To cover this energy range in a room temperature and in a low background environment, Si PIN junction diodes of 2 mm in thickness with 2.5 cm sup 2 in effective area were developed, and will be used in the bottom of the Phoswich Hard X-ray Detector (HXD), on-board the ASTRO-E satellite. Problems related to a high purity Si and a thick depletion layer during our development and performance of the PIN diodes are presented in detail.

  14. Quantum dot resonant tunneling diode single photon detector with aluminum oxide aperture defined tunneling area

    OpenAIRE

    Li, H W; Kardynal, Beata; Ellis, D. J. P.; Shields, A.J.; Farrer, I.; Ritchie, D. A.

    2008-01-01

    Quantum dot resonant tunneling diode single photon detector with independently defined absorption and sensing areas is demonstrated. The device, in which the tunneling is constricted to an aperture in an insulating layer in the emitter, shows electrical characteristics typical of high quality resonant tunneling diodes. A single photon detection efficiency of 2.1%+/- 0.1% at 685 nm was measured corresponding to an internal quantum efficiency of 14%. The devices are simple to fabricate, robust,...

  15. Structure, stability, and spectra of lateral modes of a broad-area semiconductor laser

    DEFF Research Database (Denmark)

    Blaaberg, Søren; Petersen, Paul Michael; Tromborg, Bjarne

    2007-01-01

    We present a theoretical analysis of the lateral modes of a broad-area semiconductor laser. The structure of the modes are classified into four categories and the modes are traced in the frequency versus pump rate diagram. It is shown how the branches of the frequency tuning curves for the differ......We present a theoretical analysis of the lateral modes of a broad-area semiconductor laser. The structure of the modes are classified into four categories and the modes are traced in the frequency versus pump rate diagram. It is shown how the branches of the frequency tuning curves...

  16. Observation of electro-activated localized structures in broad area VCSELs

    CERN Document Server

    Parravicini, J; Columbo, L; Prati, F; Rizza, C; Tissoni, G; Agranat, A J; DelRe, E

    2014-01-01

    We demonstrate experimentally the electro-activation of a localized optical structure in a coherently driven broad-area vertical-cavity surface-emitting laser (VCSEL) operated below threshold. Control is achieved by electro-optically steering a writing beam through a pre-programmable switch based on a photorefractive funnel waveguide.

  17. Experimental demonstration of phase bistability in a broad area optical oscillator with injected signal

    CERN Document Server

    Martínez-Lorente, R; Rolán, E; Staliunas, K; de Valcárcel, G J; Silva, F

    2016-01-01

    We demonstrate experimentally that a broad area laser-like optical oscillator (a nondegenerate photorefractive oscillator) with structured injected signal displays two-phase patterns. The technique (G. J. de Valc\\'arcel and K. Staliunas, Phys. Rev. Lett. (105), 054101 (2010)) consists in spatially modulating the injection, so that its phase alternates periodically between two opposite values, i.e. differing by pi

  18. A micrometer-size movable light emitting area in a resonant tunneling light emitting diode

    International Nuclear Information System (INIS)

    We report on the fabrication of a micrometer-size movable light emitting area in a GaAs/AlAs quantum well resonant tunneling p-i-n diode. The spatial position of the micrometer-size light emitting area shifts linearly with increasing applied bias, up to 30 μm for a bias increment of 0.2 V. Also, the simultaneous resonant tunneling injection of both electrons and holes into the quantum well states is achieved at specific positions of the diode, thus resulting in a tenfold increase of the electroluminescence intensity

  19. A micrometer-size movable light emitting area in a resonant tunneling light emitting diode

    Energy Technology Data Exchange (ETDEWEB)

    Pettinari, G., E-mail: giorgio.pettinari@cnr.it [School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD (United Kingdom); National Research Council (CNR), Institute for Photonics and Nanotechnologies (IFN-CNR), Via Cineto Romano 42, 00156 Roma (Italy); Balakrishnan, N.; Makarovsky, O.; Campion, R. P.; Patanè, A. [School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD (United Kingdom); Polimeni, A.; Capizzi, M. [CNISM-Dipartimento di Fisica, Sapienza Università di Roma, P.le A. Moro 2, 00185 Roma (Italy)

    2013-12-09

    We report on the fabrication of a micrometer-size movable light emitting area in a GaAs/AlAs quantum well resonant tunneling p-i-n diode. The spatial position of the micrometer-size light emitting area shifts linearly with increasing applied bias, up to 30 μm for a bias increment of 0.2 V. Also, the simultaneous resonant tunneling injection of both electrons and holes into the quantum well states is achieved at specific positions of the diode, thus resulting in a tenfold increase of the electroluminescence intensity.

  20. A micrometer-size movable light emitting area in a resonant tunneling light emitting diode

    Science.gov (United States)

    Pettinari, G.; Balakrishnan, N.; Makarovsky, O.; Campion, R. P.; Polimeni, A.; Capizzi, M.; Patanè, A.

    2013-12-01

    We report on the fabrication of a micrometer-size movable light emitting area in a GaAs/AlAs quantum well resonant tunneling p-i-n diode. The spatial position of the micrometer-size light emitting area shifts linearly with increasing applied bias, up to 30 μm for a bias increment of 0.2 V. Also, the simultaneous resonant tunneling injection of both electrons and holes into the quantum well states is achieved at specific positions of the diode, thus resulting in a tenfold increase of the electroluminescence intensity.

  1. Quantum dot resonant tunneling diode single photon detector with aluminum oxide aperture defined tunneling area

    DEFF Research Database (Denmark)

    Li, H.W.; Kardynal, Beata; Ellis, D.J.P.;

    2008-01-01

    Quantum dot resonant tunneling diode single photon detector with independently defined absorption and sensing areas is demonstrated. The device, in which the tunneling is constricted to an aperture in an insulating layer in the emitter, shows electrical characteristics typical of high quality res...

  2. Intrinsic performance-limiting instabilities in two-level class-B broad-area lasers

    Science.gov (United States)

    Pakhomov, A. V.; Molevich, N. E.; Krents, A. A.; Anchikov, D. A.

    2016-08-01

    The present paper is concerned with the analytical and numerical investigation of the transverse spatio-temporal instabilities in two-level broad-area lasers for the specific class-B case. We show that the two-level class-B broad-area laser tends to naturally operate in the filamentary state. This is revealed to be provided with two causes. First of them is related with the homogeneous output profile being intrinsically unstable due to the traveling-wave instability, independently from the boundary conditions. Secondly, high sensitivity to the boundaries of the pumping region was found for the commonly used top-hat-like profile leading to boundaries-induced filamentary dynamics. Spatio-temporal properties of both instability mechanisms are studied and their effects on the resulting laser dynamical behavior are analyzed.

  3. Cavity solitons in broad-area vertical-cavity surface-emitting lasers below threshold

    International Nuclear Information System (INIS)

    Cavity solitons are stationary self-organized bright intensity peaks which form over a homogeneous background in the section of broad area radiation beams. They are generated by shining a writing/erasing laser pulse into a nonlinear optical cavity, driven by a holding beam. The ability to control their location and their motion by introducing phase or amplitude gradients in the holding beam makes them interesting as mobile pixels for all-optical processing units. We show the generation of a number of cavity solitons in broad-area vertical cavity semiconductor microresonators electrically pumped above transparency but slightly below threshold. We analyze the switching process in details. The observed spots can be written, erased, and manipulated as independent objects, as predicted by the theoretical model. An especially tailored one is used to simulate the studied phenomena and to compare our simulations to the experimental findings with good agreement

  4. An electron beam-heater with a broad-area plasma cathode

    International Nuclear Information System (INIS)

    An electron-beam heater with a broad-area plasma cathode was designed for thermal treatment of large surfaces in vacuum. Using the plasma electron source of broad cross-section beams instead of a hot-cathode gun generating thin scanning beams allows simultaneous heating all the surface as well as lengthening the service life and raising the reliability of the heater. A broad-area emitting plasma surface is produced in a special electrode cavity by injection into it, through a small hole, of charged particles from a reflex discharge with cold electrodes. Such a principle of design of the plasma cathode allows to obtain an electron beam of the required current density in the pressure range of 10-2 to 1 Pa. The heater can be operated with He, Ar, air and other gases. Using a multiaperture accelerating system comprising emitting and accelerating electrodes, an electron beam up to 150 mm in diameter with an energy up to 15 keV, a current up to 0.5 A, and a nonuniformity of the cross-sectional distribution of the current density not more than +- 6% on the area of 100 cm2 could be generated. The efficiency of the heater at the accelerating voltage of 11 to 13 kV equals to about 90%. (author)

  5. Area-dependent electrical characteristics of Schottky diodes fabricated on n-type GaN

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Yunju; Kim, Yangsoo [Korea Basic Science Institute, Suncheon (Korea, Republic of); Jung, Eunjin; Oh, Munsik; Kim, Hyunsoo [Chonbuk National University, Jeonju (Korea, Republic of)

    2014-05-15

    The electrical characteristics of Schottky diodes fabricated on n-type GaN were investigated as a function of the contact area. A strong areal dependence was observed for all Schottky diodes, e.g., the larger the contact area, the smaller the Schottky barrier height, while the ideality factor retained a large value as high as 2.0 for all contact areas, likely due to the randomly-distributed threading dislocations observed via atomic force microscopy and/or to the plasma-induced surface states. A strong area-dependent Schottky barrier height could, therefore, be explained in terms of the barrier inhomogeneity model. In this transport regime, the Schottky characteristics exhibited an insignificant dependence on the work function of the Schottky metals; namely, Fermi level pinning occurred.

  6. Area-dependent electrical characteristics of Schottky diodes fabricated on n-type GaN

    International Nuclear Information System (INIS)

    The electrical characteristics of Schottky diodes fabricated on n-type GaN were investigated as a function of the contact area. A strong areal dependence was observed for all Schottky diodes, e.g., the larger the contact area, the smaller the Schottky barrier height, while the ideality factor retained a large value as high as 2.0 for all contact areas, likely due to the randomly-distributed threading dislocations observed via atomic force microscopy and/or to the plasma-induced surface states. A strong area-dependent Schottky barrier height could, therefore, be explained in terms of the barrier inhomogeneity model. In this transport regime, the Schottky characteristics exhibited an insignificant dependence on the work function of the Schottky metals; namely, Fermi level pinning occurred.

  7. 5.5-MeV proton irradiation of a strained quantum-well laser diode and a multiple quantum-well broad-band LED

    International Nuclear Information System (INIS)

    The degradation under 5.5-MeV proton irradiation of two classes of quantum-well-based fiber-optic light sources was evaluated for satellite applications. The first was an InGaAs/GaAs strained-layer quantum-well (QW) laser; the second was a broad-band light-emitting diode (LED) based on dual asymmetric quantum wells in the InGaAs/GaAs/AlGaAs system. In contrast to earlier reports comparing bulk active-region heterostructure LEDs with similarly structured laser diodes, these QW LEDs were more tolerant of proton irradiation (-3dB power at ∼3x1013 protons/cm2) than the QW lasers (-3dB power at ∼3x1012 protons/cm2). The LEDs were operated far into gain saturation with a high-loss cavity structure, while the lasers were operated in a region where gain was more sensitive to current density. Therefore atomic displacement-related recombination sites had a greater detrimental effect upon the lasers than the LEDs. The lasers held constant slope efficiency, and current thresholds increased linearly with proton fluence, while both LED power and slope efficiency decreased with proton fluence. Similar damage factors were found to those predicted from a universal damage factor versus non-ionizing energy deposition relation reported by others, and appears to extend that relation to include these QW photonic devices

  8. Control of lateral divergence in high-power, broad-area photonic crystal lasers

    Science.gov (United States)

    Rong, Jiamin; Xing, Enbo; Wang, Lijie; Shu, Shili; Tian, Sicong; Tong, Cunzhu; Wang, Lijun

    2016-07-01

    One-dimensional photonic bandgap crystal (PBC) lasers have demonstrated ultra-low vertical divergence and record brightness; however, their future development is limited by their lateral beam quality. In this paper, a fishbone microstructure is proposed to control the lateral modes in broad-area PBC lasers. The findings reveal that the introduction of the microstructure improves the full width at half maximum of the lateral far field by 22.2% and increases the output power to a small extent. The detailed measurements show that the lateral beam parameter product decreases by 15.9%.

  9. Enlargement of the inversionless lasing domain by using broad-area cavities

    International Nuclear Information System (INIS)

    We investigate analytically and numerically the role of diffraction in the operation of a broad-area inversionless laser in a cascade three-level configuration. Through a linear stability analysis of the trivial non-lasing solution and numerical integration of the corresponding Maxwell-Schroedinger equations, we show that off-axis emission allows stationary inversionless lasing over a cavity detuning range much larger than in small-aspect-ratio cavities and in conventionally inverted three-level lasers. In addition, we investigate inversionless lasing in a self-pulsing regime in the presence of diffraction, which leads to rich spatiotemporal dynamics

  10. Enlargement of the inversionless lasing domain by using broad-area cavities

    CERN Document Server

    Mompart, J; Ahufinger, V; García-Ojalvo, J; Corbalán, R; Vilaseca, R

    2003-01-01

    We investigate analytically and numerically the role of diffraction in the operation of a broad-area inversionless laser in a cascade three-level configuration. Through a linear stability analysis of the trivial non-lasing solution and numerical integration of the corresponding Maxwell-Schroedinger equations, we show that off-axis emission allows stationary inversionless lasing over a cavity detuning range much larger than in small-aspect-ratio cavities and in conventionally inverted three-level lasers. In addition, we investigate inversionless lasing in a self-pulsing regime in the presence of diffraction, which leads to rich spatiotemporal dynamics.

  11. Vector cavity solitons in broad area Vertical-Cavity Surface-Emitting Lasers.

    Science.gov (United States)

    Averlant, Etienne; Tlidi, Mustapha; Thienpont, Hugo; Ackemann, Thorsten; Panajotov, Krassimir

    2016-01-01

    We report the experimental observation of two-dimensional vector cavity solitons in a Vertical-Cavity Surface-Emitting Laser (VCSEL) under linearly polarized optical injection when varying optical injection linear polarization direction. The polarization of the cavity soliton is not the one of the optical injection as it acquires a distinct ellipticity. These experimental results are qualitatively reproduced by the spin-flip VCSEL model. Our findings open the road to polarization multiplexing when using cavity solitons in broad-area lasers as pixels in information technology. PMID:26847004

  12. Spatially nondegenerate four-wave mixing in a broad area semiconductor laser: Modeling

    DEFF Research Database (Denmark)

    Jensen, Søren Blaaberg; Tromborg, Bjarne; Petersen, P. M.

    coupled equations for the field components in the cavity and a rate equation is used to describe the carrier density of the semiconductor material. The interference pattern of the four field components inside the cavity induces a periodic spatial modulation of the carrier density and thus of the complex......We present a numerical model of spatially nondegenerate four-wave mixing in a bulk broad area semiconductor laser with an external reflector and a spatial filter. The external reflector provides a feedback with an off-aixs direction of propagation. Such a configuration has experimentally been seen...

  13. Two-wave mixing in a broad-area semiconductor amplifier

    DEFF Research Database (Denmark)

    Chi, M.; Jensen, S.B.; Huignard, J.P.;

    2006-01-01

    The two-wave mixing in the broad-area semiconductor amplifier was investigated, both theoretically and experimentally. In detail we investigated how the optical gain is affected by the presence of the two-wave mixing interference grating. In the experimental setup we are able to turn on and off...... the interference pattern in the semiconductor amplifier. This arrangement allows us to determine the two-wave mixing gain. The coupled-wave equations of two-wave mixing were derived based on the Maxwell’s wave equation and rate equation of the carrier density. The analytical solutions of the coupled-wave equations...

  14. Broad-area search for targets in SAR imagery with context-adaptive algorithms

    Science.gov (United States)

    Patterson, Tim J.; Fairchild, Scott R.

    1996-06-01

    This paper describes an ATR system based on gray scale morphology which has proven very effective in performing broad area search for targets of interest. Gray scale morphology is used to extract several distinctive sets of features which combine intensity and spatial information. Results of direct comparisons with other algorithms are presented. In a series of tests which were scored independently the morphological approach has shown superior results. An automated training systems based on a combination of genetic algorithms and classification and regression trees is described. Further performance gains are expected by allowing context sensitive selection of parameter sets for the morphological processing. Context is acquired from the image using texture measures to identify the local clutter environment. The system is designed to be able to build new classifiers on the fly to match specific image to image variations.

  15. A reflex glow discharge as a plasma source for broad area electron beam generation

    International Nuclear Information System (INIS)

    The authors demonstrated an electron beam generation scheme in which two glow discharge electron guns are used in a reflex configuration to create a dense and cold plasma in a large volume. The thermal electrons from this plasma, created mainly by electron beam ionization, are subsequently accelerated in the gap between two grids by an externally applied electric field to produce a broad area electron beam. This electron beam current density and energy are independently controlled by the voltage applied to the glow discharge guns and by the electric field sustained between the grids respectively. They present a schematic representation of the electron gun used in the experimental demonstration of the concept reported here

  16. Thermal investigation on high power dfb broad area lasers at 975 nm, with 60% efficiency

    Science.gov (United States)

    Mostallino, R.; Garcia, M.; Deshayes, Y.; Larrue, A.; Robert, Y.; Vinet, E.; Bechou, L.; Lecomte, M.; Parillaud, O.; Krakowski, M.

    2016-03-01

    The demand of high power diode lasers in the range of 910-980nm is regularly growing. This kind of device for many applications, such as fiber laser pumping [1], material processing [1], solid-state laser pumping [1], defense and medical/dental. The key role of this device lies in the efficiency (𝜂𝐸) of converting input electrical power into output optical power. The high value of 𝜂𝐸 allows high power level and reduces the need in heat dissipation. The requirement of wavelength stabilization with temperature is more obvious in the case of multimode 975nm diode lasers used for pumping Yb, Er and Yb/Er co-doped solid-state lasers, due to the narrow absorption line close to this wavelength. Such spectral width property (management of diode laser device and improve the structure based on design for reliability. To have a perfect relation between structure, and their modification, and temperature, FEM simulations are performed using COMSOL software. In this case, we can understand the impact of structure on the isothermal distribution and then reveal the sensitive zones in the diode laser. To validate the simulation, we compare the simulation results to the experimental one and develop an analytical model to determine the different contributions of the thermal heating. This paper reports on the development laser structure and the process techniques required to write the gratings. Performances are particularly characterized in terms of experimental electro-optical characterization and spectral response. The extraction of thermal resistance (Rth) is particularly difficult, because of the implicit low value (Rth ≈ 2𝐾/𝑊) and the multimodal nature of the diode laser. In such a context, thermal resistance has been measured using a dedicated equipment namely T3STER©. The results have been compared with those given by the well-known technique achieved from the spectrum of the diode laser (central wavelength variations vs

  17. Characterization of a commercially available large area, high detection efficiency single-photon avalanche diode

    CERN Document Server

    Stipčević, Mario; Ursin, Rupert

    2013-01-01

    We characterize a new commercial, back-illuminated reach-through silicon single-photon avalanche photo diode (SPAD) SAP500 (Laser Components. Inc.), operated in Geiger-mode for purpose of photon counting. We show that for this sensor a significant interplay exists between dark counts, detection efficiency, afterpulsing, excess voltage and operating temperature, sometimes requiring a careful optimization tailored for a specific application. We find that a large flat plateau of sensitive area of about 0.5 mm in diameter, a peak quantum efficiency of 73% at 560 nm and timing precision down to 150 ps FWHM are the main distinguishing characteristics of this SPAD.

  18. Design, fabrication and test of Load Bearing multilayer insulation to support a broad area cooled shield

    Science.gov (United States)

    Dye, S. A.; Johnson, W. L.; Plachta, D. W.; Mills, G. L.; Buchanan, L.; Kopelove, A. B.

    2014-11-01

    Improvements in cryogenic propellant storage are needed to achieve reduced or Zero Boil Off of cryopropellants, critical for long duration missions. Techniques for reducing heat leak into cryotanks include using passive multi-layer insulation (MLI) and vapor cooled or actively cooled thermal shields. Large scale shields cannot be supported by tank structural supports without heat leak through the supports. Traditional MLI also cannot support shield structural loads, and separate shield support mechanisms add significant heat leak. Quest Thermal Group and Ball Aerospace, with NASA SBIR support, have developed a novel Load Bearing multi-layer insulation (LBMLI) capable of self-supporting thermal shields and providing high thermal performance. We report on the development of LBMLI, including design, modeling and analysis, structural testing via vibe and acoustic loading, calorimeter thermal testing, and Reduced Boil-Off (RBO) testing on NASA large scale cryotanks. LBMLI uses the strength of discrete polymer spacers to control interlayer spacing and support the external load of an actively cooled shield and external MLI. Structural testing at NASA Marshall was performed to beyond maximum launch profiles without failure. LBMLI coupons were thermally tested on calorimeters, with superior performance to traditional MLI on a per layer basis. Thermal and structural tests were performed with LBMLI supporting an actively cooled shield, and comparisons are made to the performance of traditional MLI and thermal shield supports. LBMLI provided a 51% reduction in heat leak per layer over a previously tested traditional MLI with tank standoffs, a 38% reduction in mass, and was advanced to TRL5. Active thermal control using LBMLI and a broad area cooled shield offers significant advantages in total system heat flux, mass and structural robustness for future Reduced Boil-Off and Zero Boil-Off cryogenic missions with durations over a few weeks.

  19. Large area buried nanopatterning by broad ion implantation without any mask or direct writing

    OpenAIRE

    Karmakar, Prasanta; Satpati, Biswarup

    2013-01-01

    We have introduced here a simple, single step and cost effective broad ion beam technique for preparation of nanoscale electronic, magnetic, optical and mechanical devices without the need of resist, mask, or focused electron and ion beams. In this approach, broad beam ion implantation of desired atom on a prefabricated ion beam patterned surface promotes site selective deposition by adjusting the local angle of ion implantation. We show that implantation of Fe ions on an O+ induced pre fabri...

  20. 20 000 h reliable operation of 100 µm stripe width 650 nm broad area lasers at more than 1.1 W output power

    International Nuclear Information System (INIS)

    Reliability tests for highly efficient high-power 650 nm broad area diode lasers will be presented. The devices have a 5 nm thick single GaInP quantum well as an active layer, which is embedded in AlGaInP waveguide layers and n-AlInP and p-AlGaAs cladding layers. The devices with a stripe width of 100 µm and a cavity length of 1.5 mm were soldered on diamond submounts and mounted on standard C-mounts for an efficient heat removal. The test was performed at a temperature of 15 °C over a first period of 10 000 h at 1.1 W followed by a second period of 10 000 h at 1.2 W. Based on the aging test and assuming a 60% confidence level, the lower limit of the mean time to failure of 87 000 h was determined for the devices

  1. Area-Effective Inductive Peaking with Interwoven Inductor for High-Speed Laser-Diode Driver for Optical Communication System

    OpenAIRE

    KUBOKI, Takeshi; OHTOMO, Yusuke; TSUCHIYA, Akira; KISHINE, Keiji; Onodera, Hidetoshi

    2012-01-01

    This paper presents an area-effective bandwidth enhancement technique using interwoven inductors. Inductive peaking is a common practice for bandwidth enhancement, however the area overhead of inductors is a serious issue. We implement six or four inductors into an interwoven inductor. Furthermore parasitics of the inductors can be reduced. The proposed inductor is applied to a laser-diode driver in a 0.18µm CMOS. Compared to conventional shunt-peaking, the proposed circuit achieves 1.6 times...

  2. A high-frequency response and a nonlinear coherent generation in resonant-tunneling diodes within a broad frequency range with electron-electron interaction

    International Nuclear Information System (INIS)

    Within the framework of a sequential quantum mechanical model, the response and the power of a coherent generation have been obtained numerically in a resonant-tunneling diode in a wide range of frequencies with the electron-electron interaction. The quantum regime of generation is shown to be sustained under the electron-electron interaction. Thus, a high-power generation is probable under frequencies exceeding the width of the resonant level

  3. Current models broadly neglect specific needs of biodiversity conservation in protected areas under climate change

    Directory of Open Access Journals (Sweden)

    Moloney Kirk A

    2011-05-01

    Full Text Available Abstract Background Protected areas are the most common and important instrument for the conservation of biological diversity and are called for under the United Nations' Convention on Biological Diversity. Growing human population densities, intensified land-use, invasive species and increasing habitat fragmentation threaten ecosystems worldwide and protected areas are often the only refuge for endangered species. Climate change is posing an additional threat that may also impact ecosystems currently under protection. Therefore, it is of crucial importance to include the potential impact of climate change when designing future nature conservation strategies and implementing protected area management. This approach would go beyond reactive crisis management and, by necessity, would include anticipatory risk assessments. One avenue for doing so is being provided by simulation models that take advantage of the increase in computing capacity and performance that has occurred over the last two decades. Here we review the literature to determine the state-of-the-art in modeling terrestrial protected areas under climate change, with the aim of evaluating and detecting trends and gaps in the current approaches being employed, as well as to provide a useful overview and guidelines for future research. Results Most studies apply statistical, bioclimatic envelope models and focus primarily on plant species as compared to other taxa. Very few studies utilize a mechanistic, process-based approach and none examine biotic interactions like predation and competition. Important factors like land-use, habitat fragmentation, invasion and dispersal are rarely incorporated, restricting the informative value of the resulting predictions considerably. Conclusion The general impression that emerges is that biodiversity conservation in protected areas could benefit from the application of modern modeling approaches to a greater extent than is currently reflected in the

  4. Minimum sampling area and a biodiversity of riparian broad-leaved/Korean pine forest in Erdaobaihe forested watershed, Changbai Mountain

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    Riparian zone is an important component of forested watershed. Species component, structure, and distribution pattern of plant community in riparian zone are different from those of forest far away from the riparian zone because of edge effect and influence of river, and their minimum sampling areas are also different. To study the minimum area and a biodiversity of broad-leaved/Korean pine forest in riparian zone, three 8 m × 32 m sampling belts were selected and distributed at elevation of 800 m, 900 m, and 1000 m. In the riparian broad-leaved/Korean pine forest, mean minimum sampling areas including 60%, 80%, and 90% of total species were 80 m2 (8 m×10 m), 180 m2 (12 m×15 m), and 320 m2 (16 m × 20 m) respectively; The corresponding mean minimum areas of non-riparian forest were about 260 m2, 380 m2, and 480 m2; and the former were smaller than the latter. In the riparian zone, species richness, Shannon-Weiner index and species evenness were also higher than those in non-riparian forest. On the contrary, species dominance in forest community was higher than that in riparian zone.

  5. Broad Band Optical Properties of Large Area Monolayer CVD Molybdenum Disulfide

    OpenAIRE

    Li, Wei; Birdwell, A. Glen; Amani, Matin; Burke, Robert A.; Ling, Xi; Lee, Yi-Hsien; Liang, Xuelei; Peng, Lianmao; Richter, Curt A.; Kong, Jing; Gundlach, David J.; Nguyen, N.V.

    2014-01-01

    Recently emerging large-area single-layer MoS2 grown by chemical vapor deposition has triggered great interest due to its exciting potential for applications in advanced electronic and optoelectronic devices. Unlike gapless graphene, MoS2 has an intrinsic band gap in the visible which crosses over from an indirect to a direct gap when reduced to a single atomic layer. In this article, we report a comprehensive study of fundamental optical properties of MoS2 revealed by optical spectroscopy of...

  6. Gain-guided broad area quantum cascade lasers emitting 23.5 W peak power at room temperature.

    Science.gov (United States)

    Sergachev, Ilia; Maulini, Richard; Bismuto, Alfredo; Blaser, Stephane; Gresch, Tobias; Muller, Antoine

    2016-08-22

    We report gain-guided broad area quantum cascade lasers at 4.55 μm. The devices were processed in a buried heterostructure configuration with a current injector section much narrower than the active region. They demonstrate 23.5 W peak power at a temperature of 20°C and duty cycle of 1%, while their far field consists of a single symmetric lobe centered on the optical axis. These experimental results are supported well by 2D numerical simulations of electric currents and optical fields in a device cross-section. PMID:27557186

  7. High-power, low-lateral divergence broad area quantum cascade lasers with a tilted front facet

    International Nuclear Information System (INIS)

    We introduce a simple technique to improve the beam quality of broad area quantum cascade lasers. Moderately tilted front facets of the laser provide suppression of higher order lateral waveguide modes. A device with a width of 60 μm and a front facet angle of 17° shows a nearly diffraction limited beam profile. In addition, the peak output power and the slope efficiency of the device are increased since most of the light inside the cavity is emitted through the tilted front facet by an asymmetric light intensity distribution along the cavity

  8. In situ characterization of strain distribution in broad-area high-power lasers under operation by high-resolution x-ray diffraction and topography using synchrotron radiation

    Science.gov (United States)

    Zeimer, U.; Baumbach, T.; Grenzer, J.; Lübbert, D.; Mazuelas, A.; Pietsch, U.; Erbert, G.

    1999-05-01

    The strain distribution in broad-area high-power semiconductor laser diodes is investigated both before and during operation and degradation by high-resolution x-ray diffraction using synchrotron radiation. An inhomogeneous strain distribution along the stripe and at the stripe edges is found due to the mounting and bonding of the laser device. From the current-induced thermal lattice expansion the temperature rise during operation near the active region is estimated. The radius of curvature of the laser changes during operation and a different thermal behaviour on the front and the rear facet is found. The temperature distribution along the laser stripe could be correlated with the defect distribution observed after degradation by cathodoluminescence.

  9. In situ characterization of strain distribution in broad-area high-power lasers under operation by high-resolution x-ray diffraction and topography using synchrotron radiation

    Energy Technology Data Exchange (ETDEWEB)

    Zeimer, U.; Erbert, G. [Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik, Berlin (Germany); Baumbach, T. [Fraunhofer-Institut fuer Zerstoerungsfreie Pruefverfahren, Dresden (Germany); Grenzer, J.; Luebbert, D.; Mazuelas, A. [ESRF Grenoble, Grenoble (France); Pietsch, U. [Institut fuer Physik, Universitaet Potsdam, Potsdam (Germany)

    1999-05-21

    The strain distribution in broad-area high-power semiconductor laser diodes is investigated both before and during operation and degradation by high-resolution x-ray diffraction using synchrotron radiation. An inhomogeneous strain distribution along the stripe and at the stripe edges is found due to the mounting and bonding of the laser device. From the current-induced thermal lattice expansion the temperature rise during operation near the active region is estimated. The radius of curvature of the laser changes during operation and a different thermal behaviour on the front and the rear facet is found. The temperature distribution along the laser stripe could be correlated with the defect distribution observed after degradation by cathodoluminescence. (author)

  10. Nonlinear gain amplification due to two-wave mixing in a broad-area semiconductor amplifier with moving gratings

    DEFF Research Database (Denmark)

    Chi, Mingjun; Huignard, J.-P.; Petersen, Paul Michael

    2008-01-01

    equations of two-wave mixing are derived based on the Maxwell’s wave equation and rate equation of the carrier density. The analytical solutions of the coupled-wave equations are obtained in the condition of small signal when the total intensity is far below the saturation intensity of the amplifier......The two-wave mixing in a broad-area semiconductor amplifier with moving gratings is investigated theoretically, where a pump beam and a signal beam with different frequencies are considered, thus both a moving phase grating and a moving gain grating are induced in the amplifier. The coupled-wave...... or decrease due to the two-wave mixing. © 2008 Optical Society of America...

  11. Site specific isolated nanostructure array formation on a large area by broad ion beam without any mask and resist

    Science.gov (United States)

    Karmakar, Prasanta; Satpati, Biswarup

    2014-06-01

    We report the formation of isolated nanostructure arrays on a large area via broad ion beam implantation without the aid of any mask or resist. Desired ions have been implanted at specific locations of the prefabricated silicon ripple or triangular structures by exploiting the variation of local ion impact angles. We have shown that the implantation of Fe ions on an O+ ions induced pre fabricated triangular shaped patterned Si surface results in a self-organized periodic array of striped magnetic nanostructures having several micron length and about 50 nm width arranged with a spacial separation of ˜200 nm. The morphology, composition, crystalline structure, and magnetic property of these nanopatterns have been analyzed using high-resolution cross-sectional transmission electron microscopy and atomic force microscopy. A geometrical model has been proposed to explain the fundamental features of such ion-induced nanopattern structures.

  12. Site specific isolated nanostructure array formation on a large area by broad ion beam without any mask and resist

    International Nuclear Information System (INIS)

    We report the formation of isolated nanostructure arrays on a large area via broad ion beam implantation without the aid of any mask or resist. Desired ions have been implanted at specific locations of the prefabricated silicon ripple or triangular structures by exploiting the variation of local ion impact angles. We have shown that the implantation of Fe ions on an O+ ions induced pre fabricated triangular shaped patterned Si surface results in a self-organized periodic array of striped magnetic nanostructures having several micron length and about 50 nm width arranged with a spacial separation of ∼200 nm. The morphology, composition, crystalline structure, and magnetic property of these nanopatterns have been analyzed using high-resolution cross-sectional transmission electron microscopy and atomic force microscopy. A geometrical model has been proposed to explain the fundamental features of such ion-induced nanopattern structures.

  13. Production of uniform ion beam of large area in a magnetically-insulatd diode

    International Nuclear Information System (INIS)

    The results of experimental investigation of a magnetically insulated diode generating a powerful ribbon ion beam with 100x10 cm cross section are presented. Modification of the known diode designs allowed to provide the constancy of the electric and magnetic field by the anode length and uniform generation of the ion beam over the larger part of its length. At the same time these measures have decreased considerably electron losses in the anode up to 1-2 A/cm2 that reduces the efficiency of anode plasma formation during the first part of a high-voltage pulse. At 500 kV anode voltage the ion current amplitude is 18 kA, the beam-out energy - 460 J, the efficiency of ion generation - 85%

  14. A semiconductor silicon PIN diode matrix detector for measurement of 133Xe washout in small regional skin areas.

    Science.gov (United States)

    Jensen, J H; Sørensen, J L; Hauge, E N; Sejrsen, P; Bojsen, J

    1993-05-01

    Local variations in microvascularization are expected in lesions and lesion-free skin of patients with pressure sores. To investigate these variations, methods for studies of the regional blood flow rate within small skin areas are needed. Regional blood flow can be estimated by measuring the washout of 133Xe from the tissue. This study describes a 2 x 12 Si PIN diode matrix detector capable of 133Xe detection, and equipped with a collimator to improve the spatial resolution. Thus the regional blood flow in subcutaneous skin areas down to about 2 cm2 can be investigated when the atraumatic epicutaneous labelling technique is used. The capability of the matrix detector and its collimator is described by laboratory investigations. In pilot investigations three normal subjects and three paraplegics with pressure sores were studied. In each individual study the detector matrix was divided into six square areas containing four diode detectors each. Thus six 133Xe disappearance rate constants from adjacent subcutaneous tissue could be determined simultaneously. PMID:8334415

  15. Synthesis and luminescence properties of a broad-band red phosphor Ca{sub 3}Si{sub 2}O{sub 7}:Eu{sup 2+} for warm white light-emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Qian Fengjiao [College of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing 210016 (China); Fu Renli, E-mail: renlifu@nuaa.edu.cn [College of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing 210016 (China); Agathopoulos, Simeon [Materials Science and Engineering Department, University of Ioannina, GR-451 10 Ioannina (Greece); Gu Xiguang; Song Xiufeng [College of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing 210016 (China)

    2012-01-15

    Single-phase broad-band red-emitting Ca{sub 3}Si{sub 2}O{sub 7}:Eu{sup 2+} phosphors, with photoluminescence features that qualify them as candidates for white light-emitting diodes applications, were successfully synthesized via a modified solid-state reaction method that employed H{sub 3}BO{sub 3} as a flux. The phosphors produced have an intense broad red emission band, with a peak at 603 nm, a full width at half maximum of 110 nm, and color coordinates of (0.550, 0.438). Concentration quenching occurred at 0.01 mol Eu{sup 2+}. The discussion of the results shows that Eu{sup 2+} ions should be accommodated at the Ca-sites of the lattice, dipole-dipole interactions should predominantly govern the energy transfer mechanism among them, and the critical distance between them is {approx}31 A. - Highlights: > Pure Ca{sub 3}Si{sub 2}O{sub 7}:Eu{sup 2+} phosphor was successfully synthesized by adding H{sub 3}BO{sub 3} . > Effects of H{sub 3}BO{sub 3} on phase formation and emission intensity were presented. > Luminescence properties in conjunction with Ca{sub 3}Si{sub 2}O{sub 7} structure were studied. > Energy transfer mechanism of Eu{sup 2+} and its critical distance were proposed.

  16. Application of a process-based shallow landslide hazard model over a broad area in Central Italy

    Science.gov (United States)

    Gioia, Eleonora; Speranza, Gabriella; Ferretti, Maurizio; Godt, Jonathan W.; Baum, Rex L.; Marincioni, Fausto

    2015-01-01

    Process-based models are widely used for rainfall-induced shallow landslide forecasting. Previous studies have successfully applied the U.S. Geological Survey’s Transient Rainfall Infiltration and Grid-Based Regional Slope-Stability (TRIGRS) model (Baum et al. 2002) to compute infiltration-driven changes in the hillslopes’ factor of safety on small scales (i.e., tens of square kilometers). Soil data input for such models are difficult to obtain across larger regions. This work describes a novel methodology for the application of TRIGRS over broad areas with relatively uniform hydrogeological properties. The study area is a 550-km2 region in Central Italy covered by post-orogenic Quaternary sediments. Due to the lack of field data, we assigned mechanical and hydrological property values through a statistical analysis based on literature review of soils matching the local lithologies. We calibrated the model using rainfall data from 25 historical rainfall events that triggered landslides. We compared the variation of pressure head and factor of safety with the landslide occurrence to identify the best fitting input conditions. Using calibrated inputs and a soil depth model, we ran TRIGRS for the study area. Receiver operating characteristic (ROC) analysis, comparing the model’s output with a shallow landslide inventory, shows that TRIGRS effectively simulated the instability conditions in the post-orogenic complex during historical rainfall scenarios. The implication of this work is that rainfall-induced landslides over large regions may be predicted by a deterministic model, even where data on geotechnical and hydraulic properties as well as temporal changes in topography or subsurface conditions are not available.

  17. White LEDs as broad spectrum light sources for spectrophotometry: demonstration in the visible spectrum range in a diode-array spectrophotometric detector.

    Science.gov (United States)

    Piasecki, Tomasz; Breadmore, Michael C; Macka, Mirek

    2010-11-01

    Although traditional lamps, such as deuterium lamps, are suitable for bench-top instrumentation, their compatibility with the requirements of modern miniaturized instrumentation is limited. This study investigates the option of utilizing solid-state light source technology, namely white LEDs, as a broad band spectrum source for spectrophotometry. Several white light LEDs of both RGB and white phosphorus have been characterized in terms of their emission spectra and energy output and a white phosphorus Luxeon LED was then chosen for demonstration as a light source for visible-spectrum spectrophotometry conducted in CE. The Luxeon LED was fixed onto the base of a dismounted deuterium (D(2) ) lamp so that the light-emitting spot was geometrically positioned exactly where the light-emitting spot of the original D(2) lamp is placed. In this manner, the detector of a commercial CE instrument equipped with a DAD was not modified in any way. As the detector hardware and electronics remained the same, the change of the deuterium lamp for the Luxeon white LED allowed a direct comparison of their performances. Several anionic dyes as model analytes with absorption maxima between 450 and 600 nm were separated by CE in an electrolyte of 0.01 mol/L sodium tetraborate. The absorbance baseline noise as the key parameter was 5 × lower for the white LED lamp, showing clearly superior performance to the deuterium lamp in the available, i.e. visible part of the spectrum.

  18. White LEDs as broad spectrum light sources for spectrophotometry: demonstration in the visible spectrum range in a diode-array spectrophotometric detector.

    Science.gov (United States)

    Piasecki, Tomasz; Breadmore, Michael C; Macka, Mirek

    2010-11-01

    Although traditional lamps, such as deuterium lamps, are suitable for bench-top instrumentation, their compatibility with the requirements of modern miniaturized instrumentation is limited. This study investigates the option of utilizing solid-state light source technology, namely white LEDs, as a broad band spectrum source for spectrophotometry. Several white light LEDs of both RGB and white phosphorus have been characterized in terms of their emission spectra and energy output and a white phosphorus Luxeon LED was then chosen for demonstration as a light source for visible-spectrum spectrophotometry conducted in CE. The Luxeon LED was fixed onto the base of a dismounted deuterium (D(2) ) lamp so that the light-emitting spot was geometrically positioned exactly where the light-emitting spot of the original D(2) lamp is placed. In this manner, the detector of a commercial CE instrument equipped with a DAD was not modified in any way. As the detector hardware and electronics remained the same, the change of the deuterium lamp for the Luxeon white LED allowed a direct comparison of their performances. Several anionic dyes as model analytes with absorption maxima between 450 and 600 nm were separated by CE in an electrolyte of 0.01 mol/L sodium tetraborate. The absorbance baseline noise as the key parameter was 5 × lower for the white LED lamp, showing clearly superior performance to the deuterium lamp in the available, i.e. visible part of the spectrum. PMID:21077241

  19. Coaxial foilless diode

    Directory of Open Access Journals (Sweden)

    Long Kong

    2014-05-01

    Full Text Available A kind of coaxial foilless diode is proposed in this paper, with the structure model and operating principle of the diode are given. The current-voltage relation of the coaxial foilless diode and the effects of structure parameters on the relation are studied by simulation. By solving the electron motion equation, the beam deviation characteristic in the presence of external magnetic field in transmission process is analyzed, and the relationship between transverse misalignment with diode parameters is obtained. These results should be of interest to the area of generation and propagation of radial beam for application of generating high power microwaves.

  20. Computer Simulations of Edge Effects in a Small-Area Mesa N-P Junction Diodes: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Appel, J.; Sopori, B.; Ravindra, N. M.

    2009-02-01

    In this work, computer simulations are used to determine the influence of edge conditions on the overall performance of mesa diodes under dark and illuminated conditions. In particular, we examine the effect of edge shape on the I-V characteristics of the diode.

  1. A Novel Passive Millimeter Imager for Broad-Area Search - Final Report on Project PL09-NPMI-PD07 (PNNL-55180)

    Energy Technology Data Exchange (ETDEWEB)

    Tedeschi, Jonathan R.; Bernacki, Bruce E.; Kelly, James F.; Sheen, David M.; Harris, Robert V.; Hall, Thomas E.; Hatchell, Brian K.; Knopik, Clint D.; Lechelt, Wayne M.; McMakin, Douglas L.; Mendoza, Albert; Severtsen, Ronald H.; Valdez, Patrick LJ

    2011-12-31

    This report describes research and development efforts toward a novel passive millimeter-wave (mm-wave) electromagnetic imaging device for broad-area search. It addresses the technical challenge of detecting anomalies that occupy a small fraction of a pixel. The purpose of the imager is to pinpoint suspicious locations for cuing subsequent higher-resolution imaging. The technical basis for the approach is to exploit thermal and polarization anomalies that distinguish man-made features from natural features.

  2. Theory of mind broad and narrow: reasoning about social exchange engages ToM areas, precautionary reasoning does not.

    Science.gov (United States)

    Ermer, Elsa; Guerin, Scott A; Cosmides, Leda; Tooby, John; Miller, Michael B

    2006-01-01

    Baron-Cohen (1995) proposed that the theory of mind (ToM) inference system evolved to promote strategic social interaction. Social exchange--a form of co-operation for mutual benefit--involves strategic social interaction and requires ToM inferences about the contents of other individuals' mental states, especially their desires, goals, and intentions. There are behavioral and neuropsychological dissociations between reasoning about social exchange and reasoning about equivalent problems tapping other, more general content domains. It has therefore been proposed that social exchange behavior is regulated by social contract algorithms: a domain-specific inference system that is functionally specialized for reasoning about social exchange. We report an fMRI study using the Wason selection task that provides further support for this hypothesis. Precautionary rules share so many properties with social exchange rules--they are conditional, deontic, and involve subjective utilities--that most reasoning theories claim they are processed by the same neurocomputational machinery. Nevertheless, neuroimaging shows that reasoning about social exchange activates brain areas not activated by reasoning about precautionary rules, and vice versa. As predicted, neural correlates of ToM (anterior and posterior temporal cortex) were activated when subjects interpreted social exchange rules, but not precautionary rules (where ToM inferences are unnecessary). We argue that the interaction between ToM and social contract algorithms can be reciprocal: social contract algorithms requires ToM inferences, but their functional logic also allows ToM inferences to be made. By considering interactions between ToM in the narrower sense (belief-desire reasoning) and all the social inference systems that create the logic of human social interaction--ones that enable as well as use inferences about the content of mental states--a broader conception of ToM may emerge: a computational model embodying

  3. Degradation Processes in High-Power Diode Lasers under External Optical Feedback

    DEFF Research Database (Denmark)

    Tomm, Jens. W.; Hempel, Martin; Petersen, Paul Michael;

    2013-01-01

    The effect of moderate external feedback on the gradual degradation of 808 nm emitting AlGaAs-based high-power broad-area diode lasers is analyzed. Eventually the quantum well that actually experiences the highest total optical load remains unaffected by the aging, while severe impact...

  4. High Power Diode Lasers with External Feedback: Overview and Prospects

    DEFF Research Database (Denmark)

    Chi, Mingjun; Petersen, Paul Michael

    2012-01-01

    In summary, different external-cavity feedback techniques to improve the spatial beam quality and narrow the linewidth of the output beam from both BALs and TDLs are presented. Broad-area diode laser system with external-cavity feedback around 800 nm can produce several Watts of output power...... with a good beam quality. Tapered diode laser systems with external-cavity feedback around 800 and 1060 nm can deliver more than 2 W output power with diffraction-limited beam quality and can be operated in single-longitudinal mode. These high-brightness, narrow linewidth, and tunable external-cavity diode...... lasers emerge as the next generation of compact lasers that have the potential of replacing conventional high power laser systems in many existing applications....

  5. Fabrication of Fe3Si/CaF2 heterostructures ferromagnetic resonant tunneling diode by selected-area molecular beam epitaxy

    International Nuclear Information System (INIS)

    We have fabricated 200-nm-diameter ferromagnetic resonant tunneling diodes (FM-RTDs) using CaF2/Fe3Si heterostructures on Si(111) substrates, by selected-area molecular beam epitaxy (MBE) using electron-beam (EB) lithography. Clear negative differential resistances (NDRs) were observed in the current-voltage (I-V) characteristics at room temperature (RT). The reproducibility of the I-V characteristics was greatly improved, and approximately 40% of the FM-RTDs showed clear NDRs at RT.

  6. Fabrication of Fe{sub 3}Si/CaF{sub 2} heterostructures ferromagnetic resonant tunneling diode by selected-area molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Sadakuni-Makabe, Kenji; Suzuno, Mitsushi; Harada, Kazunori [Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennohdai, Tsukuba, Ibaraki 305-8573 (Japan); Suemasu, Takashi, E-mail: suemasu@bk.tsukuba.ac.jp [Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennohdai, Tsukuba, Ibaraki 305-8573 (Japan); Akinaga, Hiro [Nanodevice Innovation Research Center and Nanotechnology Research Institute, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568 (Japan)

    2011-10-03

    We have fabricated 200-nm-diameter ferromagnetic resonant tunneling diodes (FM-RTDs) using CaF{sub 2}/Fe{sub 3}Si heterostructures on Si(111) substrates, by selected-area molecular beam epitaxy (MBE) using electron-beam (EB) lithography. Clear negative differential resistances (NDRs) were observed in the current-voltage (I-V) characteristics at room temperature (RT). The reproducibility of the I-V characteristics was greatly improved, and approximately 40% of the FM-RTDs showed clear NDRs at RT.

  7. High brightness laser source based on polarization coupling of two diode lasers with asymmetric feedback

    DEFF Research Database (Denmark)

    Thestrup, B.; Chi, M.; Sass, B.;

    2003-01-01

    In this letter, we show that polarization coupling and asymmetric diode-laser feedback can be used to combine two diode-laser beams with low spatial coherence into a single beam with high spatial coherence. The coupled laser source is based on two similar laser systems each consisting of a 1 mumx......200 mum broad area laser diode applied with a specially designed feedback circuit. When operating at two times threshold, 50% of the freely running system output power is obtained in a single beam with an M-2 beam quality factor of 1.6+/-0.1, whereas the M-2 values of the two freely running diode...... lasers are 29+/-1 and 34+/-1, respectively. (C) 2003 American Institute of Physics....

  8. Current-Sensing and Voltage-Feedback Driving Method for Large-Area High-Resolution Active Matrix Organic Light Emitting Diodes

    Science.gov (United States)

    In, Hai‑Jung; Choi, Byong‑Deok; Chung, Ho‑Kyoon; Kwon, Oh‑Kyong

    2006-05-01

    There is the problem of picture quality nonuniformity due to thin film transistor (TFT) characteristic variations throughout a panel of large-area high-resolution active matrix organic light emitting diodes. The current programming method could solve this issue, but it also requires very long charging time of a data line at low gray shades. Therefore, we propose a new driving method and a pixel circuit with emission-current sensing and feedback operation in order to resolve these problems. The proposed driving method and pixel circuit successfully compensate threshold voltage and mobility variations of TFTs and overcome the data line charging problem. Simulation results show that emission current deviations of the proposed driving method are less than 1.7% with ± 10.0% mobility and ± 0.3 V threshold voltage variations of pixel-driving TFTs, which means the proposed driving method is applicable to large-area high-resolution applications.

  9. Color-conversion efficiency enhancement of quantum dots via selective area nano-rods light-emitting diodes.

    Science.gov (United States)

    Liu, Che-Yu; Chen, Tzu-Pei; Kao, Tsung Sheng; Huang, Jhih-Kai; Kuo, Hao-Chung; Chen, Yang-Fang; Chang, Chun-Yen

    2016-08-22

    A large enhancement of color-conversion efficiency of colloidal quantum dots in light-emitting diodes (LEDs) with novel structures of nanorods embedded in microholes has been demonstrated. Via the integration of nano-imprint and photolithography technologies, nanorods structures can be fabricated at specific locations, generating functional nanostructured LEDs for high-efficiency performance. With the novel structured LED, the color-conversion efficiency of the existing quantum dots can be enhanced by up to 32.4%. The underlying mechanisms can be attributed to the enhanced light extraction and non-radiative energy transfer, characterized by conducting a series of electroluminescence and time-resolved photoluminescence measurements. This hybrid nanostructured device therefore exhibits a great potential for the application of multi-color lighting sources. PMID:27557273

  10. Variability in radial sap flux density patterns and sapwood area among seven co-occurring temperate broad-leaved tree species.

    Science.gov (United States)

    Gebauer, Tobias; Horna, Viviana; Leuschner, Christoph

    2008-12-01

    Forest transpiration estimates are frequently based on xylem sap flux measurements in the outer sections of the hydro-active stem sapwood. We used Granier's constant-heating technique with heating probes at various xylem depths to analyze radial patterns of sap flux density in the sapwood of seven broad-leaved tree species differing in wood density and xylem structure. Study aims were to (1) compare radial sap flux density profiles between diffuse- and ring-porous trees and (2) analyze the relationship between hydro-active sapwood area and stem diameter. In all investigated species except the diffuse-porous beech (Fagus sylvatica L.) and ring-porous ash (Fraxinus excelsior L.), sap flux density peaked at a depth of 1 to 4 cm beneath the cambium, revealing a hump-shaped curve with species-specific slopes. Beech and ash reached maximum sap flux densities immediately beneath the cambium in the youngest annual growth rings. Experiments with dyes showed that the hydro-active sapwood occupied 70 to 90% of the stem cross-sectional area in mature trees of diffuse-porous species, whereas it occupied only about 21% in ring-porous ash. Dendrochronological analyses indicated that vessels in the older sapwood may remain functional for 100 years or more in diffuse-porous species and for up to 27 years in ring-porous ash. We conclude that radial sap flux density patterns are largely dependent on tree species, which may introduce serious bias in sap-flux-derived forest transpiration estimates, if non-specific sap flux profiles are assumed.

  11. Efficient quasi-three-level Nd:YAG laser at 946 nm pumped by a tunable external cavity tapered diode laser

    DEFF Research Database (Denmark)

    Cheng, Haynes Pak Hay; Jensen, Ole Bjarlin; Tidemand-Lichtenberg, Peter;

    2010-01-01

    Using a tunable external cavity tapered diode laser (ECDL) pumped quasi-three-level Nd:YAG laser, a fivefold reduction in threshold and twofold increase in slope efficiency is demonstrated when compared to a traditional broad area diode laser pump source. A TEM00 power of 800 mW with 65% slope...... efficiency is obtained, the highest reported TEM00 power from any 946 nm Nd:YAG laser pumped by a single emitter diode laser pump source. A quantum efficiency of 0.85 has been estimated from experimental data using a simple quasi-three-level model. The reported value is in good agreement with published...... values, suggesting that the model is adequate. Improvement of the 946 nm laser due to the ECDL's narrow spectrum proves to be less significant when compared to its spatial quality, inferring a broad spectrum tapered diode laser pump source may be most practical. Experimental confirmation of such setup...

  12. Wavelength beam combining of a 980-nm tapered diode laser bar in an external cavity

    DEFF Research Database (Denmark)

    Vijayakumar, Deepak; Jensen, Ole Bjarlin; Thestrup Nielsen, Birgitte

    2010-01-01

    solution for preserving the beam quality of the bar in the range of that of a single emitter and at the same time, enabling the power scaling. We report spectral beam combining applied to a 12 emitter tapered laser bar at 980 nm. The external cavity has been designed for a wavelength separation of 4.0 nm......High power diode lasers are used in a large number of applications. A limiting factor for more widespread use of broad area lasers is the poor beam quality. Gain guided tapered diode lasers are ideal candidates for industrial applications that demands watt level output power with good beam quality...

  13. 基于微带线的W波段宽带pin管开关%Design of broad-band W-band pin diode switch based on microstrip technology

    Institute of Scientific and Technical Information of China (English)

    许正彬; 崔寅杰; 钱澄

    2014-01-01

    采用微带混合集成工艺设计了一款W波段宽带pin管开关.通过建立pin管的Ansoft HF-SS模型,实现了开关整体的精确仿真.分析了开关结构中主传输线特性对隔离度的影响,在此基础上采用高阻抗主传输线有效地提高了开关的隔离度,进而展宽了开关的隔离度带宽.为了获得开关的宽带导通特性,采用行波技术补偿pin管反向偏置时寄生参量的影响.为了验证该设计方法的正确性,对所设计的开关进行了加工、测试.测试结果表明:开关在87~103.5 GHz频率范围内,隔离度大于30 dB;在80~90 GHz频率范围内,开关导通时的插损小于1.2 dB;在90~95 GHz频率范围内,开关导通时插损小于1.5 dB .仿真结果与测试结果吻合良好.%A broadband W-band switch is presented using microstrip hybrid microwave integrated circuit.The accurate simulation of entire switch is achieved by building the model of pin diode in Ansoft HFSS (High Frequency Structure Simulator).Effects of the main transmission line character-istics of the switch on the isolation performance are analyzed.The isolation of the switch is efficient-ly improved using high-impedance main transmission lines and then the isolation bandwidth of the switch is also broadened.To obtain a broadband on-state bandwidth of the switch,the traveling wave technology is adopted to compensate the parasitic parameters of the diode in the reverse bias state.In order to validate the proposed design method,the developed switch is fabricated and meas-ured.The measurement results show that the isolation of the switch is greater than 30 dB in the fre-quency range of 87 to 103.5 GHz.Insertion loss less than 1.2 dB in the frequency range of 80 to 90 GHz and 1 .5 dB in the frequency range of 90 to 95 GHz are achieved under on-state,respectively. The simulation results agree well with the measured ones.

  14. On-chip coherent combining of angled-grating diode lasers toward bar-scale single-mode lasers.

    Science.gov (United States)

    Zhao, Yunsong; Zhu, Lin

    2012-03-12

    Single mode operation of broad-area diode lasers, which is the key to obtain high power, high brightness sources, is difficult due to highly nonlinear materials and strong coupling between gain and index. Conventional broad-area lasers usually operate with multiple modes and have poor beam quality. Laser bars usually consist of incoherently combined broad-area single emitters placed side by side. In this article, we have demonstrated a novel integrated laser architecture in which Bragg diffraction is used to realize simultaneous modal control and coherent combining of broad-area diode lasers. Our experimental results show that two 100 μm wide, 1.3mm long InP broad-area lasers provide near-diffraction-limited output beam and are coherently combined at the same time without any external optical components. Furthermore, our design can be expanded to a coherently combined broad-area laser array that turns a laser bar into a coherent single mode laser with diffraction-limited beam quality.

  15. Promoting Robust Design of Diode Lasers for Space: A National Initiative

    Science.gov (United States)

    Tratt, David M.; Amzajerdian, Farzin; Kashem, Nasir B.; Shapiro, Andrew A.; Mense, Allan T.

    2007-01-01

    The Diode-laser Array Working Group (DAWG) is a national-level consumer/provider forum for discussion of engineering and manufacturing issues which influence the reliability and survivability of high-power broad-area laser diode devices in space, with an emphasis on laser diode arrays (LDAs) for optical pumping of solid-state laser media. The goals of the group are to formulate and validate standardized test and qualification protocols, operational control recommendations, and consensus manufacturing and certification standards. The group is using reliability and lifetime data collected by laser diode manufacturers and the user community to develop a set of standardized guidelines for specifying and qualifying laser diodes for long-duration operation in space, the ultimate goal being to promote an informed U.S. Government investment and procurement strategy for assuring the availability and durability of space-qualified LDAs. The group is also working to establish effective implementation of statistical design techniques at the supplier design, development, and manufacturing levels to help reduce product performance variability and improve product reliability for diodes employed in space applications

  16. Large area inkjet printing for organic photovoltaics and organic light emitting diodes using non-halogenated ink formulations

    NARCIS (Netherlands)

    Eggenhuisen, T.M.; Coenen, M.J.J.; Slaats, M.W.L.; Groen, W.A.

    2014-01-01

    The transfer of laboratory scale solution processing of organic electronics to large area roll-to-roll production requires the use of up-scalable deposition techniques. Furthermore, industrial production demands the omission of halogenated and other harmful solvents. Here, the authors discuss large

  17. Green high-power tunable external-cavity GaN diode laser at 515 nm

    DEFF Research Database (Denmark)

    Chi, Mingjun; Jensen, Ole Bjarlin; Petersen, Paul Michael

    2016-01-01

    A 480 mW green tunable diode laser system is demonstrated for the first time to our knowledge. The laser system is based on a GaN broad-area diode laser and Littrow external-cavity feedback. The green laser system is operated in two modes by switching the polarization direction of the laser beam...... incident on the grating. When the laser beam is p-polarized, an output power of 50 mW with a tunable range of 9.2 nm is achieved. When the laser beam is s-polarized, an output power of 480 mW with a tunable range of 2.1 nm is obtained. This constitutes the highest output power from a tunable green diode...... laser system....

  18. Channelized coplanar waveguide pin-diode switches

    Science.gov (United States)

    Ponchak, G. E.; Simons, R. N.

    1989-01-01

    Three different types of p-i-n diode, reflective CPW switches are presented. The first two switches are the series and the shunt mounted diode switches. Each has achieved greater than 15 dB of isolation over a broad bandwidth. The third switch is a narrow band, high isolation switched filter which has achieved 19 dB of isolation. Equivalent circuits and measured performance for each switch is presented.

  19. Physics and applications of laser diode chaos

    Science.gov (United States)

    Sciamanna, M.; Shore, K. A.

    2015-03-01

    This Review Article provides an overview of chaos in laser diodes by surveying experimental achievements in the area and explaining the theory behind the phenomenon. The fundamental physics underpinning laser diode chaos and also the opportunities for harnessing it for potential applications are discussed. The availability and ease of operation of laser diodes, in a wide range of configurations, make them a convenient testbed for exploring basic aspects of nonlinear and chaotic dynamics. It also makes them attractive for practical tasks, such as chaos-based secure communications and random number generation. Avenues for future research and development of chaotic laser diodes are also identified.

  20. Physics and Applications of Laser Diode Chaos

    CERN Document Server

    Sciamanna, Marc

    2015-01-01

    An overview of chaos in laser diodes is provided which surveys experimental achievements in the area and explains the theory behind the phenomenon. The fundamental physics underpinning this behaviour and also the opportunities for harnessing laser diode chaos for potential applications are discussed. The availability and ease of operation of laser diodes, in a wide range of configurations, make them a convenient test-bed for exploring basic aspects of nonlinear and chaotic dynamics. It also makes them attractive for practical tasks, such as chaos-based secure communications and random number generation. Avenues for future research and development of chaotic laser diodes are also identified.

  1. Effect of Top-Region Area of Flat-Top Pyramid Patterned Sapphire Substrate on the Optoelectronic Performance of GaN-Based Light-Emitting Diodes

    Directory of Open Access Journals (Sweden)

    Hsu-Hung Hsueh

    2016-01-01

    Full Text Available The flat-top pyramid patterned sapphire substrates (FTP-PSSs have been prepared for the growth of GaN epilayers and the fabrication of lateral-type light-emitting diodes (LEDs with an emission wavelength of approximately 470 nm. Three kinds of FTP-PSSs, which were denoted as FTP-PSS-A, FTP-PSS-B, and FTP-PSS-C, respectively, were formed through the sequential wet etching processes. The diameters of circle areas on the top regions of these three FTP-PSSs were 1, 2, and 3 μm, respectively. Based on the X-ray diffraction results, the full-width at half-maximum values of rocking curves at (002 plane for the GaN epilayers grown on conventional sapphire substrate (CSS, FTP-PSS-A, FTP-PSS-B, and FTP-PSS-C were 412, 238, 346, and 357 arcsec, while these values at (102 plane were 593, 327, 352, and 372 arcsec, respectively. The SpeCLED-Ratro simulation results reveal that the LED prepared on FTP-PSS-A has the highest light extraction efficiency than that of the other devices. At an injection current of 350 mA, the output powers of LEDs fabricated on CSS, FTP-PSS-A, FTP-PSS-B, and FTP-PSS-C were 157, 254, 241, and 233 mW, respectively. The results indicate that both the crystal quality of GaN epilayer and the light extraction of LED can be improved via the use of FTP-PSS, especially for the FTP-PSS-A.

  2. Compatibility of the selective area growth of GaN nanowires on AlN-buffered Si substrates with the operation of light emitting diodes

    International Nuclear Information System (INIS)

    AlN layers with thicknesses between 2 and 14 nm were grown on Si(111) substrates by molecular beam epitaxy. The effect of the AlN layer thickness on the morphology and nucleation time of spontaneously formed GaN nanowires (NWs) was investigated by scanning electron microscopy and line-of-sight quadrupole mass spectrometry, respectively. We observed that the alignment of the NWs grown on these layers improves with increasing layer thickness while their nucleation time decreases. Our results show that 4 nm is the smallest thickness of the AlN layer that allows the growth of well-aligned NWs with short nucleation time. Such an AlN buffer layer was successfully employed, together with a patterned SiOx mask, for the selective-area growth (SAG) of vertical GaN NWs. In addition, we fabricated light-emitting diodes (LEDs) from NW ensembles that were grown by means of self-organization phenomena on bare and on AlN-buffered Si substrates. A careful characterization of the optoelectronic properties of the two devices showed that the performance of NW-LEDs on bare and AlN-buffered Si is similar. Electrical conduction across the AlN buffer is facilitated by a high number of grain boundaries that were revealed by transmission electron microscopy. These results demonstrate that grainy AlN buffer layers on Si are compatible both with the SAG of GaN NWs and LED operation. Therefore, this study is a first step towards the fabrication of LEDs on Si substrates based on homogeneous NW ensembles. (paper)

  3. Leaf area expansion and dry matter accumulation during establishment of broad bean and sorghum at different temperatures and soil water contents in two types of soil in mediterranean Portugal

    OpenAIRE

    Andrade, José; Abreu, Francisco

    2005-01-01

    Crop establishment is a major factor determining crop productivity in the field and is strongly controlled by soil temperature and soil moisture. Fast leaf expansion and dry matter accumulation during crop establishment are required for an adequate establishment. Leaf area expansion and accumulation of dry matter during the establishment of broad bean (Vicia faba L.) and sorghum (Sorghum vulgare L.) were studied at different soil temperatures and soil moisture contents in a Vertisol (Lisbo...

  4. Continuous bottom temperature measurements in strategic areas of the Florida Reef Tract at the Broad Creek site, 2006 - 2007 (NODC Accession 0039880)

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — The purpose of this project is to document bottom seawater temperature in strategic areas of the Florida Reef Tract on a continuing basis and make that information...

  5. Frequency-comb-assisted broadband precision spectroscopy with cascaded diode lasers

    DEFF Research Database (Denmark)

    Liu, Junqiu; Brasch, Victor; Pfeiffer, Martin H. P.;

    2016-01-01

    Frequency-comb-assisted diode laser spectroscopy, employing both the accuracy of an optical frequency comb and the broad wavelength tuning range of a tunable diode laser, has been widely used in many applications. In this Letter, we present a novel method using cascaded frequency agile diode lasers...

  6. Green high-power tunable external-cavity GaN diode laser at 515  nm.

    Science.gov (United States)

    Chi, Mingjun; Jensen, Ole Bjarlin; Petersen, Paul Michael

    2016-09-15

    A 480 mW green tunable diode laser system is demonstrated for the first time to our knowledge. The laser system is based on a GaN broad-area diode laser and Littrow external-cavity feedback. The green laser system is operated in two modes by switching the polarization direction of the laser beam incident on the grating. When the laser beam is p-polarized, an output power of 50 mW with a tunable range of 9.2 nm is achieved. When the laser beam is s-polarized, an output power of 480 mW with a tunable range of 2.1 nm is obtained. This constitutes the highest output power from a tunable green diode laser system. PMID:27628345

  7. The world's high background natural radiation areas (HBNRAs) revisited: A broad overview of the dosimetric, epidemiological and radiobiological issues

    International Nuclear Information System (INIS)

    The residents of the world's high background natural radiation areas (HBNRAs), such as Ramsar (in Iran), Guarapari (in Brazil), Orissa and Kerala (in India) and Yangjiang (in China) have lived in these areas for generations under extraordinary radiation fields. The failure of earlier epidemiological studies to report any substantial increase in cancer incidence in HBNRAs has raised some controversy regarding the validity of the linear no-threshold hypothesis. This paper reviews some of the most recent studies of HBNRAs with the intent of stimulating greater research interest in the dosimetric, epidemiological and radiobiological issues related to the world's HBNRAs and proposes solutions to the challenges facing HBNRA studies. This paper may serve as a useful reference for some of the harder-to-find literature. - Highlights: • Some of the challenging issues of HBNRAs have not been resolved. • A literature review of the most recent studies of HBNRAs has been conducted. • An overview of some of the challenging issues and viable solutions are presented

  8. The 2010 Broad Prize

    Science.gov (United States)

    Education Digest: Essential Readings Condensed for Quick Review, 2011

    2011-01-01

    A new data analysis, based on data collected as part of The Broad Prize process, provides insights into which large urban school districts in the United States are doing the best job of educating traditionally disadvantaged groups: African-American, Hispanics, and low-income students. Since 2002, The Eli and Edythe Broad Foundation has awarded The…

  9. Coaxial foilless diode

    OpenAIRE

    Long Kong; QingXiang Liu; XiangQiang Li; ShaoMeng Wang

    2014-01-01

    A kind of coaxial foilless diode is proposed in this paper, with the structure model and operating principle of the diode are given. The current-voltage relation of the coaxial foilless diode and the effects of structure parameters on the relation are studied by simulation. By solving the electron motion equation, the beam deviation characteristic in the presence of external magnetic field in transmission process is analyzed, and the relationship between transverse misalignment with diode par...

  10. Header For Laser Diode

    Science.gov (United States)

    Rall, Jonathan A. R.; Spadin, Paul L.

    1990-01-01

    Header designed to contain laser diode. Output combined incoherently with outputs of other laser diodes in grating laser-beam combiner in optical communication system. Provides electrical connections to laser diode, cooling to thermally stabilize laser operation, and optomechanical adjustments that steer and focus laser beam. Range of adjustments provides for correction of worst-case decentering and defocusing of laser beam encountered with laser diodes. Mechanical configuration made simple to promote stability and keep cost low.

  11. TP Diode Laser

    OpenAIRE

    Lamine, Brahim; Maître, Agnès; Schwob, Catherine

    2011-01-01

    Master Ce TP consiste à étudier des éléments optoélectroniques courants (diode laser, diode électro-luminescente, photodiode, capteur CCD). Il est axé sur les diodes laser et leurs caractéristiques utilisées dans les télécommunications et la spectroscopie.

  12. An all-silicon passive optical diode.

    Science.gov (United States)

    Fan, Li; Wang, Jian; Varghese, Leo T; Shen, Hao; Niu, Ben; Xuan, Yi; Weiner, Andrew M; Qi, Minghao

    2012-01-27

    A passive optical diode effect would be useful for on-chip optical information processing but has been difficult to achieve. Using a method based on optical nonlinearity, we demonstrate a forward-backward transmission ratio of up to 28 decibels within telecommunication wavelengths. Our device, which uses two silicon rings 5 micrometers in radius, is passive yet maintains optical nonreciprocity for a broad range of input power levels, and it performs equally well even if the backward input power is higher than the forward input. The silicon optical diode is ultracompact and is compatible with current complementary metal-oxide semiconductor processing. PMID:22194410

  13. An all-silicon passive optical diode.

    Science.gov (United States)

    Fan, Li; Wang, Jian; Varghese, Leo T; Shen, Hao; Niu, Ben; Xuan, Yi; Weiner, Andrew M; Qi, Minghao

    2012-01-27

    A passive optical diode effect would be useful for on-chip optical information processing but has been difficult to achieve. Using a method based on optical nonlinearity, we demonstrate a forward-backward transmission ratio of up to 28 decibels within telecommunication wavelengths. Our device, which uses two silicon rings 5 micrometers in radius, is passive yet maintains optical nonreciprocity for a broad range of input power levels, and it performs equally well even if the backward input power is higher than the forward input. The silicon optical diode is ultracompact and is compatible with current complementary metal-oxide semiconductor processing.

  14. Laser Diode Ignition (LDI)

    Science.gov (United States)

    Kass, William J.; Andrews, Larry A.; Boney, Craig M.; Chow, Weng W.; Clements, James W.; Merson, John A.; Salas, F. Jim; Williams, Randy J.; Hinkle, Lane R.

    1994-01-01

    This paper reviews the status of the Laser Diode Ignition (LDI) program at Sandia National Labs. One watt laser diodes have been characterized for use with a single explosive actuator. Extensive measurements of the effect of electrostatic discharge (ESD) pulses on the laser diode optical output have been made. Characterization of optical fiber and connectors over temperature has been done. Multiple laser diodes have been packaged to ignite multiple explosive devices and an eight element laser diode array has been recently tested by igniting eight explosive devices at predetermined 100 ms intervals.

  15. Efficient, high-brightness wavelength-beam-combined commercial off-the-shelf diode stacks achieved by use of a wavelength-chirped volume Bragg grating.

    Science.gov (United States)

    Chann, B; Goyal, A K; Fan, T Y; Sanchez-Rubio, A; Volodin, B L; Ban, V S

    2006-05-01

    We report a method of scaling the spatial brightness from commercial off-the-shelf diode laser stacks through wavelength beam combining, by use of a linearly wavelength-chirped volume Bragg grating (VBG). Using a three-bar commercial stack of broad-area lasers and a VBG, we demonstrate 89.5 W cw of beam-combined output with a beam-combining efficiency of 75%. The output beam has a propagation factor M2 approximately 26 on the slow axis and M2 approximately 21 on the fast axis. This corresponds to a brightness of approximately 20 MW/cm2 sr. To our knowledge, this is the highest brightness broad-area diode laser system. We achieve 81% coupling efficiency into a 100 microm, 0.22 N.A. fiber.

  16. Comparison of Diode and Argon Laser Lesions in Rabbit Retina

    Institute of Scientific and Technical Information of China (English)

    Hui Zhang; Xiaoxin Li; Bin Li; Jiping Da

    2004-01-01

    Purpose: To compare the histological alteration of retina with various spot intensities between diode and argon lasers in order to instruct the clinical use of 810 nm diode laser.Methods: Transpupillary retinal photocoagulations were performed on 42 eyes of 27pigmented rabbits. Histopathologic alteration of lesions in different intensities and different time intervals after irradiation produced by diode and argon laser was observed and compared using light microscopy. Areas of various lesions measured by image analysis system (CMIAS) were compared quantitatively.Results: Histopathologically, two-week-old grade 2 lesions produced by diode laser induced the disappearance of outer nuclear cells. More than a half of all showed reduction in number of outer nuclear layer cells in argon. Fibroblasts appeared in the diode grade 3lesions 5 days after irradiation. CMIAS data showed that all the areas of diode lesions immediately after photocoagulation were to be larger than those of argon laser lesions in the same spot intensity (P < 0.05). However, twenty-four hours after photocoagulation, the area of the diode lesions increased less than that of the argon laser lesions (8%vs.23%).Conclusion: The acute histological effect caused by 810 nm diode laser and argon green laser is similar,while the expansion of lesion area 24 hours after photocoagulation was less with the diode laser compared to the argon. This may be the first report in the literature regarding quantitative analysis of the delayed reaction of argon green lasers.

  17. High repetition rate intense ion beam diode

    International Nuclear Information System (INIS)

    A magnetically insulated ion beam diode with a gas-breakdown plasma anode has been successfully developed recently. In this paper, the authors report the experiment results of operating a version of this diode at a 1-Hz repetition rate. Intense ion beams (100ns, 200Kv and 20kA per pulse) are generated by using an inductive voltage to breakdown an annular hydrogen gas puff (8.5cm mean radius, and 160cm2 in area), and magnetically driving the resulting plasma toward a magnetically insulated accelerating gap. The high voltage pulses on the accelerating gap are supplied using two thyratron switch chassises which are connected to the diode through a series of capacitors coupled with saturable inductors. To understand the operation of the diode, the anode plasma source and the extracted ion beams are characterized by using various diagnostics

  18. Frequency Comb Assisted Broadband Precision Spectroscopy with Cascaded Diode Lasers

    CERN Document Server

    Liu, Junqiu; Pfeiffer, Martin H P; Kordts, Arne; Kamel, Ayman N; Guo, Hairun; Geiselmann, Michael; Kippenberg, Tobias J

    2016-01-01

    Frequency comb assisted diode laser spectroscopy, employing both the accuracy of an optical frequency comb and the broad wavelength tuning range of a tunable diode laser, has been widely used in many applications. In this letter we present a novel method using cascaded frequency agile diode lasers, which allows extending the measurement bandwidth to 37.4 THz (1355 to 1630 nm) at MHz resolution with scanning speeds above 1 THz/s. It is demonstrated as a useful tool to characterize a broadband spectrum for molecular spectroscopy and in particular it enables to characterize the dispersion of integrated microresonators up to the fourth order.

  19. Dual-Wavelength Internal-Optically-Pumped Semiconductor Laser Diodes

    Science.gov (United States)

    Green, Benjamin

    Dual-wavelength laser sources have various existing and potential applications in wavelength division multiplexing, differential techniques in spectroscopy for chemical sensing, multiple-wavelength interferometry, terahertz-wave generation, microelectromechanical systems, and microfluidic lab-on-chip systems. In the drive for ever smaller and increasingly mobile electronic devices, dual-wavelength coherent light output from a single semiconductor laser diode would enable further advances and deployment of these technologies. The output of conventional laser diodes is however limited to a single wavelength band with a few subsequent lasing modes depending on the device design. This thesis investigates a novel semiconductor laser device design with a single cavity waveguide capable of dual-wavelength laser output with large spectral separation. The novel dual-wavelength semiconductor laser diode uses two shorter- and longer-wavelength active regions that have separate electron and hole quasi-Fermi energy levels and carrier distributions. The shorter-wavelength active region is based on electrical injection as in conventional laser diodes, and the longer-wavelength active region is then pumped optically by the internal optical field of the shorter-wavelength laser mode, resulting in stable dual-wavelength laser emission at two different wavelengths quite far apart. Different designs of the device are studied using a theoretical model developed in this work to describe the internal optical pumping scheme. The carrier transport and separation of the quasi-Fermi distributions are then modeled using a software package that solves Poisson's equation and the continuity equations to simulate semiconductor devices. Three different designs are grown using molecular beam epitaxy, and broad-area-contact laser diodes are processed using conventional methods. The modeling and experimental results of the first generation design indicate that the optical confinement factor of the

  20. An All-Silicon Passive Optical Diode

    OpenAIRE

    Fan, Li; Wang, Jian; Varghese, Leo T.; Shen, Hao; Niu, Ben; Xuan, Yi; Weiner, Andrew M.; Qi, Minghao

    2012-01-01

    A passive optical diode effect would be useful for on-chip optical information processing but has been difficult to achieve. Using a method based on optical nonlinearity, we demonstrate a forward-backward transmission ratio of up to 28 decibels within telecommunication wavelengths. Our device, which uses two silicon rings 5 micrometers in radius, is passive yet maintains optical nonreciprocity for a broad range of input power levels, and it performs equally well even if the backward input pow...

  1. Triaxial diode on HYDRAMITE

    International Nuclear Information System (INIS)

    In 1982, members of Sandia National Laboratories' Department 1230 performed triaxial diode experiments on the HYDRAMITE accelerator. These experiments demonstrated the viability of the triaxial concept, and established the multiple, concentric diode (several, nested, triaxial diodes) as the leading candidate for the radiation-production diode for the Saturn accelerator. A triaxial diode consists of three, coaxial cylinders and a perpendicular, planar anode connecting the downstream ends of the inner and outer cylinders. The intermediate cylinder is the cathode, and the space between the end of the cathode and the planar anode is the axial, anode-cathode gap. HYDRAMITE, with a long self-magnetically-insulated transmission line, provided the electrical pulse to drive the triaxial diode. A post-hole convolute inside the diode housing split the incoming, electromagnetic wave into the two waves needed to feed the triaxial diode. An inductively-corrected, vacuum-voltage monitor measured the diode voltage, and B dot probes and Rogowski coils measured all the anode and cathode currents. Nuclear activation measurements indicated that less than 0.5% of the diode current consisted of protons moving from the anode to the cathode, and particle-in-cell computer simulations support this measurement. Moreover, the impedance was consistent with the cathode tip emitting in the one-dimensional, space-charge-limited mode with unipolar flow. Although the beam deposited enough energy in the anode to generate an anode plasma, probably the electrical pulse was too short for the plasma to form and begin emitting ions into the anode-cathode gap. Finally, no charge flowed in the inner radial gap, and the outer gap current, which was constant from shot to shot, probably originated from the post-hole convolute. 35 refs., 40 figs

  2. Smooth bumps in H/V curves over a broad area from single-station ambient noise recordings are meaningful and reveal the importance of Q in array processing: The Boumerdes (Algeria) case

    Science.gov (United States)

    Guillier, B.; Chatelain, J.-L.; Hellel, M.; Machane, D.; Mezouer, N.; Ben Salem, R.; Oubaiche, E. H.

    2005-12-01

    Single-station H/V curves from ambient noise recordings in Boumerdes (Algeria) show smooth bumps around 1 and 3 Hz. A complementary microtremor study, based on two 34 and 134-meter aperture arrays, evidences that these bumps are indeed real peaks produced by two strong VS contrasts at 37 and 118 meters depth, strongly smoothed by very high S-wave attenuation in the two sedimentary layers. These two H/V bumps, observed over a broad area, are meaningful and reveal the importance of Q in S-wave velocity modeling from microtremor array data processing. It also appears that Tertiary rocks should be, at least in some cases, taken into account, together with the Quaternary sediments, to explain single-station H/V frequency peaks, and therefore that considering only the first 30 m of soil for VS amplification evaluation, as usually recommended, sometimes leads to flaky results by artificially eliminating non-explained low-frequency peaks from the analysis.

  3. PIN Diode Detectors

    Science.gov (United States)

    Ramírez-Jiménez, F. J.

    2008-07-01

    A review of the application of PIN diodes as radiation detectors in particle counting, X- and γ-ray spectroscopy, medical applications and charged particle spectroscopy is presented. As a practical example of its usefulness, a PIN diode and a low noise preamplifier are included in a nuclear spectroscopy chain for X-ray measurements. This is a laboratory session designed to review the main concepts needed to set up the detector-preamplifier array and to make measurements of X-ray energy spectra with a room temperature PIN diode. The results obtained are compared with those obtained with a high resolution cooled Si-Li detector.

  4. Powerful infrared emitting diodes

    Directory of Open Access Journals (Sweden)

    Kogan L. M.

    2012-02-01

    Full Text Available Powerful infrared LEDs with emission wavelength 805 ± 10, 870 ± 20 and 940 ± 10 nm developed at SPC OED "OPTEL" are presented in the article. The radiant intensity of beam diode is under 4 W/sr in the continuous mode and under 100 W/sr in the pulse mode. The radiation power of wide-angle LEDs reaches 1 W in continuous mode. The external quantum efficiency of emission IR diodes runs up to 30%. There also has been created infrared diode modules with a block of flat Fresnel lenses with radiant intensity under 70 W/sr.

  5. Magnetically insulated H- diodes

    International Nuclear Information System (INIS)

    At the Univ. of California, Irvine, the authors have been studying the production of intense H- beams using pulse power techniques for the past 7 years. Previously, current densities of H- ions for various diode designs at UCI have been a few A/cm2. Recently, they have developed diodes similar to the coaxial design of the Lebedev Physical Institute, Moscow, USSR, where current densities of up to 200 A/cm2 were reported using nuclear activation of a carbon target. In experiments at UCI employing the coaxial diode, current densities of up to 35 A/cm2 from a passive polyethylene cathode loaded with TiH2 have been measured using a pinhole camera and CR-39 track recording plastic. The authors have also been working on a self-insulating, annular diode which can generate a directed beam of H- ions. In the annular diode experiments a plasma opening switch was used to provide a prepulse and a current path which self-insulated the diode. These experiments were done on the machine APEX, a 1 MV, 50 ns, 7 Ω pulseline with a unipolar negative prepulse of ∼ 100 kV and 400 ns duration. Currently, the authors are modifying the pulseline to include an external LC circuit which can generate a bipolar, 150 kV, 1 μs duration prepulse (similar prepulse characteristic as in the Lebedev Institute experiments cited above)

  6. Barrier inhomogeneities limited current and 1/f noise transport in GaN based nanoscale Schottky barrier diodes.

    Science.gov (United States)

    Kumar, Ashutosh; Heilmann, M; Latzel, Michael; Kapoor, Raman; Sharma, Intu; Göbelt, M; Christiansen, Silke H; Kumar, Vikram; Singh, Rajendra

    2016-01-01

    The electrical behaviour of Schottky barrier diodes realized on vertically standing individual GaN nanorods and array of nanorods is investigated. The Schottky diodes on individual nanorod show highest barrier height in comparison with large area diodes on nanorods array and epitaxial film which is in contrast with previously published work. The discrepancy between the electrical behaviour of nanoscale Schottky diodes and large area diodes is explained using cathodoluminescence measurements, surface potential analysis using Kelvin probe force microscopy and 1ow frequency noise measurements. The noise measurements on large area diodes on nanorods array and epitaxial film suggest the presence of barrier inhomogeneities at the metal/semiconductor interface which deviate the noise spectra from Lorentzian to 1/f type. These barrier inhomogeneities in large area diodes resulted in reduced barrier height whereas due to the limited role of barrier inhomogeneities in individual nanorod based Schottky diode, a higher barrier height is obtained.

  7. Barrier inhomogeneities limited current and 1/f noise transport in GaN based nanoscale Schottky barrier diodes

    Science.gov (United States)

    Kumar, Ashutosh; Heilmann, M.; Latzel, Michael; Kapoor, Raman; Sharma, Intu; Göbelt, M.; Christiansen, Silke H.; Kumar, Vikram; Singh, Rajendra

    2016-01-01

    The electrical behaviour of Schottky barrier diodes realized on vertically standing individual GaN nanorods and array of nanorods is investigated. The Schottky diodes on individual nanorod show highest barrier height in comparison with large area diodes on nanorods array and epitaxial film which is in contrast with previously published work. The discrepancy between the electrical behaviour of nanoscale Schottky diodes and large area diodes is explained using cathodoluminescence measurements, surface potential analysis using Kelvin probe force microscopy and 1ow frequency noise measurements. The noise measurements on large area diodes on nanorods array and epitaxial film suggest the presence of barrier inhomogeneities at the metal/semiconductor interface which deviate the noise spectra from Lorentzian to 1/f type. These barrier inhomogeneities in large area diodes resulted in reduced barrier height whereas due to the limited role of barrier inhomogeneities in individual nanorod based Schottky diode, a higher barrier height is obtained. PMID:27282258

  8. Planar jumping-drop thermal diodes

    Science.gov (United States)

    Boreyko, Jonathan B.; Zhao, Yuejun; Chen, Chuan-Hua

    2011-12-01

    Phase-change thermal diodes rectify heat transport much more effectively than solid-state ones, but are limited by either the gravitational orientation or one-dimensional configuration. Here, we report a planar phase-change diode scalable to large areas with an orientation-independent diodicity of over 100, in which water/vapor is enclosed by parallel superhydrophobic and superhydrophilic plates. The thermal rectification is enabled by spontaneously jumping dropwise condensate which only occurs when the superhydrophobic surface is colder than the superhydrophilic surface.

  9. Diode lasers and photonic integrated circuits

    CERN Document Server

    Coldren, Larry A; Mashanovitch, Milan L

    2011-01-01

    Diode Lasers and Photonic Integrated Circuits, Second Edition provides a comprehensive treatment of optical communication technology, its principles and theory, treating students as well as experienced engineers to an in-depth exploration of this field. Diode lasers are still of significant importance in the areas of optical communication, storage, and sensing. Using the the same well received theoretical foundations of the first edition, the Second Edition now introduces timely updates in the technology and in focus of the book. After 15 years of development in the field, this book wil

  10. Deterministic polarization chaos from a laser diode

    CERN Document Server

    Virte, Martin; Thienpont, Hugo; Sciamanna, Marc

    2014-01-01

    Fifty years after the invention of the laser diode and fourty years after the report of the butterfly effect - i.e. the unpredictability of deterministic chaos, it is said that a laser diode behaves like a damped nonlinear oscillator. Hence no chaos can be generated unless with additional forcing or parameter modulation. Here we report the first counter-example of a free-running laser diode generating chaos. The underlying physics is a nonlinear coupling between two elliptically polarized modes in a vertical-cavity surface-emitting laser. We identify chaos in experimental time-series and show theoretically the bifurcations leading to single- and double-scroll attractors with characteristics similar to Lorenz chaos. The reported polarization chaos resembles at first sight a noise-driven mode hopping but shows opposite statistical properties. Our findings open up new research areas that combine the high speed performances of microcavity lasers with controllable and integrated sources of optical chaos.

  11. Physical based Schottky barrier diode modeling for THz applications

    DEFF Research Database (Denmark)

    Yan, Lei; Krozer, Viktor; Michaelsen, Rasmus Schandorph;

    2013-01-01

    In this work, a physical Schottky barrier diode model is presented. The model is based on physical parameters such as anode area, Ohmic contact area, doping profile from epitaxial (EPI) and substrate (SUB) layers, layer thicknesses, barrier height, specific contact resistance, and device...... temperature. The effects of barrier height lowering, nonlinear resistance from the EPI layer, and hot electron noise are all included for accurate characterization of the Schottky diode. To verify the diode model, measured I-V and C-V characteristics are compared with the simulation results. Due to the lack...

  12. Pyrolyzed carbon film diodes.

    Science.gov (United States)

    Morton, Kirstin C; Tokuhisa, Hideo; Baker, Lane A

    2013-11-13

    We have previously reported pyrolyzed parylene C (PPC) as a conductive carbon electrode material for use with micropipets, atomic force microscopy probes, and planar electrodes. Advantages of carbon electrode fabrication from PPC include conformal coating of high-aspect ratio micro/nanoscale features and the benefits afforded by chemical vapor deposition of carbon polymers. In this work, we demonstrate chemical surface doping of PPC through the use of previously reported methods. Chemically treated PPC films are characterized by multiple spectroscopic and electronic measurements. Pyrolyzed parylene C and doped PPC are used to construct diodes that are examined as both p-n heterojunction and Schottky barrier diodes. Half-wave rectification is achieved with PPC diodes and demonstrates the applicability of PPC as a conductive and semiconductive material in device fabrication. PMID:24090451

  13. Organic reprogrammable circuits based on electrochemically formed diodes.

    Science.gov (United States)

    Liu, Jiang; Engquist, Isak; Berggren, Magnus

    2014-08-13

    We report a method to construct reprogrammable circuits based on organic electrochemical (EC) p-n junction diodes. The diodes are built up from the combination of the organic conjugated polymer poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] and a polymer electrolyte. The p-n diodes are defined by EC doping performed at 70 °C, and then stabilized at -30 °C. The reversible EC reaction allows for in situ reprogramming of the polarity of the organic p-n junction, thus enabling us to reconfigure diode circuits. By combining diodes of specific polarities dedicated circuits have been created, such as various logic gates, a voltage limiter and an AC/DC converter. Reversing the EC reaction allows in situ reprogramming of the p-n junction polarity, thus enabling reconfiguration of diode circuits, for example, from an AND gate to an OR gate. The reprogrammable circuits are based on p-n diodes defined from only two layers, the electrodes and then the active semiconductor:electrolyte composite material. Such simple device structures are promising for large-area and fully printed reconfigurable circuits manufactured using common printing tools. The structure of the reported p-n diodes mimics the architecture of and is based on identical materials used to construct light-emitting electrochemical cells (LEC). Our findings thus provide a robust signal routing technology that is easily integrated with traditional LECs.

  14. Heat pipes - Thermal diodes

    Science.gov (United States)

    Aptekar, B. F.; Baum, J. M.; Ivanovskii, M. N.; Kolgotin, F. F.; Serbin, V. I.

    The performance concept and peculiarities of the new type of thermal diode with the trap and with the wick breakage are dealt with in the report. The experimental data were obtained and analysed for the working fluid mass and the volume of the liquid in the wick on the forward-mode limiting heat transfer. The flow rate pulsation of the working fluid in the wick was observed visually on the setup with the transparent wall. The quantitative difference on the data on the investigated thermal diode and on the identical heat pipes without the wick breakage is found experimentally concerning the forward-mode limiting heat transfer.

  15. Hyperchaos via X-Diode

    DEFF Research Database (Denmark)

    Lindberg, Erik; Tamasevicius, A.; Cenys, A.;

    1998-01-01

    A Chaos diode (X-diode) with a hysteric current-voltage characteristic has been used to generate hyperchaotic oscillations characterized with multiple positive Lyapunov exponents. The hyperchaotic oscillators comprise a X-diode in parallel with an M'th order LC loop (M.GE.4). Numerical simulations...

  16. Integrating Hot and Cool Intelligences: Thinking Broadly about Broad Abilities

    Directory of Open Access Journals (Sweden)

    W. Joel Schneider

    2016-01-01

    Full Text Available Although results from factor-analytic studies of the broad, second-stratum abilities of human intelligence have been fairly consistent for decades, the list of broad abilities is far from complete, much less understood. We propose criteria by which the list of broad abilities could be amended and envision alternatives for how our understanding of the hot intelligences (abilities involving emotionally-salient information and cool intelligences (abilities involving perceptual processing and logical reasoning might be integrated into a coherent theoretical framework.

  17. Wavelength stabilized multi-kW diode laser systems

    Science.gov (United States)

    Köhler, Bernd; Unger, Andreas; Kindervater, Tobias; Drovs, Simon; Wolf, Paul; Hubrich, Ralf; Beczkowiak, Anna; Auch, Stefan; Müntz, Holger; Biesenbach, Jens

    2015-03-01

    We report on wavelength stabilized high-power diode laser systems with enhanced spectral brightness by means of Volume Holographic Gratings. High-power diode laser modules typically have a relatively broad spectral width of about 3 to 6 nm. In addition the center wavelength shifts by changing the temperature and the driving current, which is obstructive for pumping applications with small absorption bandwidths. Wavelength stabilization of high-power diode laser systems is an important method to increase the efficiency of diode pumped solid-state lasers. It also enables power scaling by dense wavelength multiplexing. To ensure a wide locking range and efficient wavelength stabilization the parameters of the Volume Holographic Grating and the parameters of the diode laser bar have to be adapted carefully. Important parameters are the reflectivity of the Volume Holographic Grating, the reflectivity of the diode laser bar as well as its angular and spectral emission characteristics. In this paper we present detailed data on wavelength stabilized diode laser systems with and without fiber coupling in the spectral range from 634 nm up to 1533 nm. The maximum output power of 2.7 kW was measured for a fiber coupled system (1000 μm, NA 0.22), which was stabilized at a wavelength of 969 nm with a spectral width of only 0.6 nm (90% value). Another example is a narrow line-width diode laser stack, which was stabilized at a wavelength of 1533 nm with a spectral bandwidth below 1 nm and an output power of 835 W.

  18. Silicon Schottky Diode Safe Operating Area

    Science.gov (United States)

    Casey, Megan C.; Lauenstein, Jean-Marie; Ladbury, Raymond L.; Wilcox, Edward P.; Phan, Anthony M.; Label, Kenneth A.

    2016-01-01

    Vulnerability of a variety of candidate spacecraft electronics to total ionizing dose and displacementdamage is studied. Devices tested include optoelectronics, digital, analog, linear bipolar devices, and hybrid devices.

  19. High net modal gain (>100 cm(-1)) in 19-stacked InGaAs quantum dot laser diodes at 1000 nm wavelength band.

    Science.gov (United States)

    Tanoue, Fumihiko; Sugawara, Hiroharu; Akahane, Kouichi; Yamamoto, Naokatsu

    2013-07-01

    An InGaAs quantum dot (QD) laser diode with 19-stacked QDs separated by 20 nm-thick GaAs spacers was fabricated using an ultrahigh-rate molecular beam epitaxial growth technique, and the laser characteristics were evaluated. A 19-stacked simple broad area QD laser diode was lased at the 1000 nm waveband. A net modal gain of 103 cm(-1) was obtained at 2.25 kA/cm(2), and the saturated modal gain was 145.6 cm(-1); these are the highest values obtained to our knowledge. These results indicate that using this technique to highly stack QDs is effective for improving the net modal gain of QD lasers.

  20. Spin-Wave Diode

    Science.gov (United States)

    Lan, Jin; Yu, Weichao; Wu, Ruqian; Xiao, Jiang

    2015-10-01

    A diode, a device allowing unidirectional signal transmission, is a fundamental element of logic structures, and it lies at the heart of modern information systems. The spin wave or magnon, representing a collective quasiparticle excitation of the magnetic order in magnetic materials, is a promising candidate for an information carrier for the next-generation energy-saving technologies. Here, we propose a scalable and reprogrammable pure spin-wave logic hardware architecture using domain walls and surface anisotropy stripes as waveguides on a single magnetic wafer. We demonstrate theoretically the design principle of the simplest logic component, a spin-wave diode, utilizing the chiral bound states in a magnetic domain wall with a Dzyaloshinskii-Moriya interaction, and confirm its performance through micromagnetic simulations. Our findings open a new vista for realizing different types of pure spin-wave logic components and finally achieving an energy-efficient and hardware-reprogrammable spin-wave computer.

  1. Biointegrated flexible inorganic light emitting diodes

    OpenAIRE

    Lee, Keon Jae

    2012-01-01

    Min Koo, So Young Park, Keon Jae LeeDepartment of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Yuseong-gu, Daejeon, Republic of KoreaAbstract: The use of light-emitting diodes (LEDs) as therapeutic tools has been actively studied over the past few decades due to their advantages of high safety, low cost, excellent portability, and wide bandwidth. In addition, their application in biomedical fields has been expanded to such areas as nerve stimulation, ...

  2. Diamond Schottky barrier diodes

    OpenAIRE

    Brezeanu, Mihai

    2008-01-01

    Research on wide band gap semiconductors suitable for power electronic devices has spread rapidly in the last decade. The remarkable results exhibited by silicon carbide (SiC) Schottky batTier diodes (SBDs), commercially available since 2001, showed the potential of wide band gap semiconductors for replacing silicon (Si) in the range of medium to high voltage applications, where high frequency operation is required. With superior physical and electrical properties, diamond beca...

  3. Study on Light Extraction from GaN-based Green Light-Emitting Diodes Using Anodic Aluminum Oxide Pattern and Nanoimprint Lithography

    OpenAIRE

    Shengxiang Jiang; Yulong Feng; Zhizhong Chen; Lisheng Zhang; Xianzhe Jiang; Qianqian Jiao; Junze Li; Yifan Chen; Dongsan Li; Lijian Liu; Tongjun Yu; Bo Shen; Guoyi Zhang

    2016-01-01

    An anodic aluminum oxide (AAO) patterned sapphire substrate, with the lattice constant of 520 ± 40 nm, pore dimension of 375 ± 50 nm, and height of 450 ± 25 nm was firstly used as a nanoimprint lithography (NIL) stamp and imprinted onto the surface of the green light-emitting diode (LED). A significant light extraction efficiency (LEE) was improved by 116% in comparison to that of the planar LED. A uniform broad protrusion in the central area and some sharp lobes were also obtained in the ang...

  4. Diode, transistor & fet circuits manual

    CERN Document Server

    Marston, R M

    2013-01-01

    Diode, Transistor and FET Circuits Manual is a handbook of circuits based on discrete semiconductor components such as diodes, transistors, and FETS. The book also includes diagrams and practical circuits. The book describes basic and special diode characteristics, heat wave-rectifier circuits, transformers, filter capacitors, and rectifier ratings. The text also presents practical applications of associated devices, for example, zeners, varicaps, photodiodes, or LEDs, as well as it describes bipolar transistor characteristics. The transistor can be used in three basic amplifier configuration

  5. Magnetically insulated helium ion diode

    International Nuclear Information System (INIS)

    A gas-puff magnetically insulated ion diode is under development as a pulsed source of high-energy alpha particles for magnetic fusion experiments. The diode is patterned after the Cornell gas-puff diode [J. B. Greenly, M. Ueda, G. D. Rondeau, and D. A. Hammer, J. Appl. Phys. 63, 1872 (1988)], but with modifications to accomodate higher voltages (2 one meter downstream from the source; in our first test of the new source, a helium beam was obtained

  6. Compact, efficient, scalable neodymium laser co-doped with activator ions and pumped by visible laser diodes

    Science.gov (United States)

    Scheps, Richard

    1994-02-01

    Efficient, low threshold laser emission from a laser crystal doped with chromium and neodymium ions is obtained when pumped by visible laser diodes in the range of 610 nm to 680 nm. A typical laser Cr,Nd:GSGG crystal having an extraordinarily broad absorption bandwidth allows high pump efficiencies when using visible laser diodes, particularly in comparison to the Nd:YAG laser. The broad absorption bandwidth tolerance of the Cr,Nd:GSGG crystal to the pumping wavelengths allows visible diode pumping of the neodymium transition without regard to the wavelength of the visible diodes. Longitudinal or end-pumping to take advantage of the emission properties of the visible laser diodes, a nearly hemispherical laser resonator configuration and other co-doped Cr,Nd laser host materials are disclosed.

  7. Rational Chebyshev Spectral Transform for the dynamics of high-power laser diodes

    CERN Document Server

    Javaloyes, J

    2014-01-01

    This manuscript details the use of the rational Chebyshev transform for describing the transverse dynamics of high-power laser diodes, either broad area lasers, index guided lasers or monolithic master oscillator power amplifier devices. This spectral method can be used in combination with the delay algebraic equation approach developed in \\cite{JB-OE-12}, which allows to substantially reduce the computation time. The theory is presented in such a way that it encompasses the case of the Fourier spectral transform presented in \\cite{PJB-JSTQE-13} as a particular case. It is also extended to the consideration of index guiding with an arbitrary profile. Because their domain of definition is infinite, the convergence properties of the Chebyshev Rational functions allow handling the boundary conditions with higher accuracy than with the previously studied Fourier method. As practical examples, we solve the beam propagation problem with and without index guiding: we obtain excellent results and an improvement of th...

  8. Overview on new diode lasers for defense applications

    Science.gov (United States)

    Neukum, Joerg

    2012-11-01

    Diode lasers have a broad wavelength range, from the visible to beyond 2.2μm. This allows for various applications in the defense sector, ranging from classic pumping of DPSSL in range finders or target designators, up to pumping directed energy weapons in the 50+ kW range. Also direct diode applications for illumination above 1.55μm, or direct IR countermeasures are of interest. Here an overview is given on some new wavelengths and applications which are recently under discussion. In this overview the following aspects are reviewed: • High Power CW pumps at 808 / 880 / 940nm • Pumps for DPAL - Diode Pumped Alkali Lasers • High Power Diode Lasers in the range Mini-Bar concept for high brightness fiber coupled modules • The Light Weight Fiber Coupled module based on the Mini-Bar concept Overall, High Power Diode Lasers offer many ways to be used in new applications in the defense market.

  9. ND laser with co-doped ion(s) pumped by visible laser diodes

    Science.gov (United States)

    Scheps, Richard

    1993-04-01

    The 1.06 microns Nd transition in a co-doped Cr,Nd:Gd3Sc2Ga3O12 (Cr,Nd:GSGG) gain element is obtained by diode pumping Cr(3+) at 670 run and produces efficient, low threshold laser operation. Although co-doped Cr,Nd:GSGG was developed for more efficient flashlamp pumping, it has the desirable property of having an extraordinarily broad absorption to allow for efficient diode pumping relative to the ND:YAG laser. The consequent broad bandwidth tolerance of the Cr,Nd:GSGG for the diode pumping radiation allows diode pumping of the 1.06 microns transition without regard to the wavelength of the visible diodes which has the potential for reducing the cost of the semiconductor pump and also demonstrates the extended versatility of these diodes which previously had been restricted to pump the Cr(3+) tunable vibronic lasers. CW and long pulse diode pumping provided pump power levels as high as 300 mW CW and 1 W pulsed. The lowest threshold power was measured at 938 micron W and the highest output power was obtained at 43 mW CW and 173 mW pulsed. The best slope efficiency obtained was 42.1%, 78% of the theoretical maximum. Loss measurements indicate a value of 0.4%/cm.

  10. The Broad Autism Phenotype Questionnaire

    Science.gov (United States)

    Hurley, Robert S. E.; Losh, Molly; Parlier, Morgan; Reznick, J. Steven; Piven, Joseph

    2007-01-01

    The broad autism phenotype (BAP) is a set of personality and language characteristics that reflect the phenotypic expression of the genetic liability to autism, in non-autistic relatives of autistic individuals. These characteristics are milder but qualitatively similar to the defining features of autism. A new instrument designed to measure the…

  11. PIN silicon diode fast neutron detector.

    Science.gov (United States)

    Zhou, Chunzhi; Zhao, Jianxing; Xiao, Wuyun

    2005-01-01

    Two batches of diodes, with different structural ratios (the ratio of area and thickness), were made using different manufacturing processes. The energy response of the first batch to 15 kinds of monoenergetic neutrons ranging from 180 keV to 17.56 MeV was tested, and the neutron source response of both batches to 239Pu-Be neutron source was measured. The energy deposition in the diodes irradiated by 1 keV to 20 MeV monoenergetic neutrons was calculated with simulation procedure. The response curve of the experimental results showed an approximately similar trend to that of theoretical computation. Based on the results of the neutron source response experiments, it was concluded that the response of fast neutron varied linearly with the structural ratio of the detectors. PMID:15972359

  12. Diode laser applications in urology

    Science.gov (United States)

    Sam, Richard C.; Esch, Victor C.

    1995-05-01

    Diode lasers are air-cooled, efficient, compact devices which have the potential of very low cost when produced in quantity. The characteristics of diode lasers are discussed. Their applications in interstitial thermal treatment of the prostate, and laser ablation of prostate tissues, will be presented.

  13. Numerical simulations of novel high-power high-brightness diode laser structures

    Science.gov (United States)

    Boucke, Konstantin; Rogg, Joseph; Kelemen, Marc T.; Poprawe, Reinhart; Weimann, Guenter

    2001-07-01

    One of the key topics in today's semiconductor laser development activities is to increase the brightness of high-power diode lasers. Although structures showing an increased brightness have been developed specific draw-backs of these structures lead to a still strong demand for investigation of alternative concepts. Especially for the investigation of basically novel structures easy-to-use and fast simulation tools are essential to avoid unnecessary, cost and time consuming experiments. A diode laser simulation tool based on finite difference representations of the Helmholtz equation in 'wide-angle' approximation and the carrier diffusion equation has been developed. An optimized numerical algorithm leads to short execution times of a few seconds per resonator round-trip on a standard PC. After each round-trip characteristics like optical output power, beam profile and beam parameters are calculated. A graphical user interface allows online monitoring of the simulation results. The simulation tool is used to investigate a novel high-power, high-brightness diode laser structure, the so-called 'Z-Structure'. In this structure an increased brightness is achieved by reducing the divergency angle of the beam by angular filtering: The round trip path of the beam is two times folded using internal total reflection at surfaces defined by a small index step in the semiconductor material, forming a stretched 'Z'. The sharp decrease of the reflectivity for angles of incidence above the angle of total reflection leads to a narrowing of the angular spectrum of the beam. The simulations of the 'Z-Structure' indicate an increase of the beam quality by a factor of five to ten compared to standard broad-area lasers.

  14. Prepared and Characteristics of ZnO:YAG/Silicon Nanostructure Diodes Prepared by Ultrasonic Spraying

    OpenAIRE

    Chih-Hung Hsu; Lung-Chien Chen; Jia-Ren Wu

    2014-01-01

    This work presents a novel white light source. An yttrium aluminum garnet (YAG) phosphor incorporated zinc oxide (ZnO) (ZnO:YAG) film is deposited on a silicon substrate by ultrasonic spray pyrolysis to form a nanostructure diode. A nanoflower consisting of a hexagonal nanopetal is formed on the surfaces of the silicon substrate. A white broad band at the room temperature photoluminescence ranging from 420 to 650 nm for the ZnO:YAG/silicon nanostructure diode was observed. The white broad ban...

  15. The influence of edge effects on the determination of the doping profile of silicon pad diodes

    CERN Document Server

    Hufschmidt, M; Garutti, E; Klanner, R; Kopsalis, I; Schwandt, J

    2016-01-01

    Edge effects for square p+n pad diodes with guard rings, fabricated on high-ohmic silicon, are investigated. Using capacitance-voltage measurements of two pad diodes with different areas, the planar and the edge contributions to the diode capacitance are determined separately. It is shown that the doping concentration derived from the capacitance-voltage measurements with and without edge corrections differ significantly. After the edge correction, the bulk doping of the pad diodes is found to be uniform within +/- 1.5%. The voltage dependence of the edge capacitance is compared to the predictions of two simple models.

  16. An Analysis of the Equivalent Resistance of PIN Diodes at Microwave Frequencies

    Institute of Scientific and Technical Information of China (English)

    YANG Guo-yu; SONG Kai-jun; MAO Rui-jie; LU Shi-qiang

    2004-01-01

    The forward bias equivalent resistance of PIN diodes, an important parameter in applications, is usually measured at lower frequencies. But in fact, due to skin effect the effective conduction area of the region I of a PIN diode decreases as the frequency increases. In this paper, the affection of skin effect to forward bias equivalent resistance is considered and an analytic expression of the equivalent resistance of the region I is presented. In result, the forward bias resistance ora PIN diode at microwave frequencies is much higher than that at DC and low frequencies. It is necessary, therefore,to consider the skin effect of PIN diodes in high frequency applications.

  17. Light Emitting Diode (LED)

    Science.gov (United States)

    1997-01-01

    A special lighting technology was developed for space-based commercial plant growth research on NASA's Space Shuttle. Surgeons have used this technology to treat brain cancer on Earth, in two successful operations. The treatment technique called photodynamic therapy, requires the surgeon to use tiny pinhead-size Light Emitting Diodes (LEDs) (a source releasing long wavelengths of light) to activate light-sensitive, tumor-treating drugs. Laser light has been used for this type of surgery in the past, but the LED light illuminates through all nearby tissues, reaching parts of a tumor that shorter wavelengths of laser light carnot. The new probe is safer because the longer wavelengths of light are cooler than the shorter wavelengths of laser light, making the LED less likely to injure normal brain tissue near the tumor. It can also be used for hours at a time while still remaining cool to the touch. The LED probe consists of 144 tiny pinhead-size diodes, is 9-inches long, and about one-half-inch in diameter. The small balloon aids in even distribution of the light source. The LED light source is compact, about the size of a briefcase, and can be purchased for a fraction of the cost of a laser. The probe was developed for photodynamic cancer therapy by the Marshall Space Flight Center under a NASA Small Business Innovative Research program grant.

  18. Broad Diphotons from Narrow States

    CERN Document Server

    An, Haipeng; Zhang, Yue

    2015-01-01

    ATLAS and CMS have each reported a modest diphoton excess consistent with the decay of a broad resonance at ~ 750 GeV. We show how this signal can arise in a weakly coupled theory comprised solely of narrow width particles. In particular, if the decaying particle is produced off-shell, then the associated diphoton resonance will have a broad, adjustable width. We present simplified models which explain the diphoton excess through the three-body decay of a scalar or fermion. Our minimal ultraviolet completion is a weakly coupled and renormalizable theory of a singlet scalar plus a heavy vector-like quark and lepton. The smoking gun of this mechanism is an asymmetric diphoton peak recoiling against missing transverse energy, jets, or leptons.

  19. Low frequency noise in two-dimensional lateral GaN/AlGaN Schottky diodes

    Science.gov (United States)

    Cywiński, G.; Szkudlarek, K.; Kruszewski, P.; Yahniuk, I.; Yatsunenko, S.; Muzioł, G.; Skierbiszewski, C.; Knap, W.; Rumyantsev, S. L.

    2016-07-01

    Schottky diodes with Ni/Au contact to the side of the two dimensional channel in GaN/AlGaN system were fabricated and studied. This kind of lateral heterodimensional diodes demonstrated the ideality factor n = 1.2-1.25 and apparent barrier height φb = (0.59-0.63) eV. The noise measurements within the frequencies range from 1 Hz to 50 kHz showed that the diodes demonstrated the superposition of 1/f and generation recombination noise. In spite of extremely small area of lateral Schottky diodes, the amplitude of noise was similar or even smaller than that for AlGaN and GaN Schottky diodes with the regular contact. This makes GaN-based lateral Schottky diodes to be very promising devices for RF and terahertz applications.

  20. Cochlear microphonic broad tuning curves

    Science.gov (United States)

    Ayat, Mohammad; Teal, Paul D.; Searchfield, Grant D.; Razali, Najwani

    2015-12-01

    It is known that the cochlear microphonic voltage exhibits much broader tuning than does the basilar membrane motion. The most commonly used explanation for this is that when an electrode is inserted at a particular point inside the scala media, the microphonic potentials of neighbouring hair cells have different phases, leading to cancelation at the electrodes location. In situ recording of functioning outer hair cells (OHCs) for investigating this hypothesis is exceptionally difficult. Therefore, to investigate the discrepancy between the tuning curves of the basilar membrane and those of the cochlear microphonic, and the effect of phase cancellation of adjacent hair cells on the broadness of the cochlear microphonic tuning curves, we use an electromechanical model of the cochlea to devise an experiment. We explore the effect of adjacent hair cells (i.e., longitudinal phase cancellation) on the broadness of the cochlear microphonic tuning curves in different locations. The results of the experiment indicate that active longitudinal coupling (i.e., coupling with active adjacent outer hair cells) only slightly changes the broadness of the CM tuning curves. The results also demonstrate that there is a π phase difference between the potentials produced by the hair bundle and the soma near the place associated with the characteristic frequency based on place-frequency maps (i.e., the best place). We suggest that the transversal phase cancellation (caused by the phase difference between the hair bundle and the soma) plays a far more important role than longitudinal phase cancellation in the broadness of the cochlear microphonic tuning curves. Moreover, by increasing the modelled longitudinal resistance resulting the cochlear microphonic curves exhibiting sharper tuning. The results of the simulations suggest that the passive network of the organ of Corti determines the phase difference between the hair bundle and soma, and hence determines the sharpness of the

  1. Application of the Pin Diode as a Dosimeter for Dose Measurement of Several Radiation Sources

    Science.gov (United States)

    Sopko, Vit; Dammer, Jiri; Chren, Dominik; Sopko, Bruno; Latal, Frantisek

    2010-04-01

    Experimental PIN diodes produced for measurement of low energy gamma radiation were exposed to neutron, proton and gamma radiation sources, in an attempt to expand the area of their application. Irradiation of the PIN diode resulted in changes of IV curve. The changes of voltage at certain current were recorded and depicted in graphs.

  2. Broad-scale sampling of primary freshwater fish populations reveals the role of intrinsic traits, inter-basin connectivity, drainage area and latitude on shaping contemporary patterns of genetic diversity.

    Science.gov (United States)

    Sousa-Santos, Carla; Robalo, Joana I; Pereira, Ana M; Branco, Paulo; Santos, José Maria; Ferreira, Maria Teresa; Sousa, Mónica; Doadrio, Ignacio

    2016-01-01

    Background. Worldwide predictions suggest that up to 75% of the freshwater fish species occurring in rivers with reduced discharge could be extinct by 2070 due to the combined effect of climate change and water abstraction. The Mediterranean region is considered to be a hotspot of freshwater fish diversity but also one of the regions where the effects of climate change will be more severe. Iberian cyprinids are currently highly endangered, with over 68% of the species raising some level of conservation concern. Methods. During the FISHATLAS project, the Portuguese hydrographical network was extensively covered (all the 34 river basins and 47 sub-basins) in order to contribute with valuable data on the genetic diversity distribution patterns of native cyprinid species. A total of 188 populations belonging to 16 cyprinid species of Squalius, Luciobarbus, Achondrostoma, Iberochondrostoma, Anaecypris and Pseudochondrostoma were characterized, for a total of 3,678 cytochrome b gene sequences. Results. When the genetic diversity of these populations was mapped, it highlighted differences among populations from the same species and between species with identical distribution areas. Factors shaping the contemporary patterns of genetic diversity were explored and the results revealed the role of latitude, inter-basin connectivity, migratory behaviour, species maximum size, species range and other species intrinsic traits in determining the genetic diversity of sampled populations. Contrastingly, drainage area and hydrological regime (permanent vs. temporary) seem to have no significant effect on genetic diversity. Species intrinsic traits, maximum size attained, inter-basin connectivity and latitude explained over 30% of the haplotype diversity variance and, generally, the levels of diversity were significantly higher for smaller sized species, from connected and southerly river basins. Discussion. Targeting multiple co-distributed species of primary freshwater fish allowed

  3. Wavelength beam combining of a 980-nm tapered diode laser bar in an external cavity

    Science.gov (United States)

    Vijayakumar, Deepak; Jensen, Ole Bjarlin; Thestrup, Birgitte

    2010-04-01

    High power diode lasers are used in a large number of applications. A limiting factor for more widespread use of broad area lasers is the poor beam quality. Gain guided tapered diode lasers are ideal candidates for industrial applications that demands watt level output power with good beam quality. By adapting a bar geometry, the output power could be scaled even up to several tens of watts. Unfortunately, the high divergence which is a characteristic feature of the bar geometry could lead to a degradation of the overall beam quality of the laser bar. However, spectral beam combining is an effective solution for preserving the beam quality of the bar in the range of that of a single emitter and at the same time, enabling the power scaling. We report spectral beam combining applied to a 12 emitter tapered laser bar at 980 nm. The external cavity has been designed for a wavelength separation of 4.0 nm between the emitters. An output power of 9 W has been achieved at an operating current of 30 A. The combined beam had an M2 value (1/e2) of 5.3 along the slow axis which is comparable to that of a single tapered emitter on the laser bar. The overall beam combining efficiency was measured to be 63%. The output spectrum of the individual emitters was narrowed considerably. In the free running mode, the individual emitters displayed a broad spectrum of the order of 0.5-1.0 nm while the spectral width has been reduced to 30-100 pm in the spectral beam combining mode.

  4. Molecular diodes and applications.

    Science.gov (United States)

    Kumar, M Jagadesh

    2007-01-01

    Due to the huge power consumption and expensive fabrication methods required, down scaling silicon devices to sub-100 nm dimensions is becoming very unattractive. On the other hand, it is easier to build electronic circuits using molecules since they are small and their properties can be tuned. In this review, we first discuss the building blocks of molecular electronics. We then describe how these building blocks can be used to build single molecule based digital logic such as AND, OR and XOR gates. The distinction of these molecular electronic building blocks is that for first time, (i) the Tour wires are used as the conductive backbone for the rectifying junctions, (ii) donor/acceptor principles are implemented in the molecular wire itself and (iii) the logic gates are realized using molecular rectifying diodes embedded in the molecular conducting wire itself. PMID:19076020

  5. Diagnosing light ion beam diodes

    International Nuclear Information System (INIS)

    This lecture begins with a discussion of diagnostics in ion-beam diodes. This will include electromagnetic measurements, measurements of the electron cloud, and measurements of anode plasmas. A few minutes will be spent on diagnostics of distributed ion sources required for one class of ion diodes, the plasma-filled versions, which require high-density, highly ionized sources of very uniform plasma. The measurements of the beam characteristics will then be discussed. This will be broken into two regions; the region near the diode where diagnostics are generally extensions of those used in other fields; and the region near focus where new diagnostics have been developed

  6. A broad-application microchannel-plate detector system for advanced particle or photon detection tasks large area imaging, precise multi-hit timing information and high detection rate

    CERN Document Server

    Jagutzki, O; Mergel, V; Schmidt-Böcking, H; Spielberger, L; Spillmann, U; Ullmann-Pfleger, K

    2002-01-01

    New applications for single particle and photon detection in many fields require both large area imaging performance and precise time information on each detected particle. Moreover, a very high data acquisition rate is desirable for most applications and eventually the detection and imaging of more than one particle arriving within a microsecond is required. Commercial CCD systems lack the timing information whereas other electronic microchannel plate (MCP) read-out schemes usually suffer from a low acquisition rate and complicated and sometimes costly read-out electronics. We have designed and tested a complete imaging system consisting of an MCP position readout with helical wire delay-lines, single-unit amplifier box and PC-controlled time-to-digital converter (TDC) readout. The system is very flexible and can detect and analyse position and timing information at single particle rates beyond 1 MHz. Alternatively, multi-hit events can be collected and analysed at about 20 kHz rate. We discuss the advantage...

  7. RESEARCH ON THE BROAD BAND DIFFERENTIAL OPTICAL ABSORPTION SPECTROSCOPY ABOUT AREA NOCUOUS GAS EXPLORER TECHNOLOGY%宽带差分吸收光谱与区域毒气探测技术的研究

    Institute of Scientific and Technical Information of China (English)

    朱弘

    2011-01-01

    论述了气体的吸收光谱与区域有害气体光谱探测技术的基本原理,探讨了差分吸收光谱技术,提出了区域远程毒气快速探测的实现方法,介绍了宽光谱光束探测痕量气体入侵、多组光谱仪测试,利用差分吸收光谱法研究出毒气报警系统,并对仪器的发展趋势进行了展望.%The basic theory of gas absorption spectroscopy and long - distance nocuous gas exploration technology were dissertated. The technology of differential optical absorption spectroscopy (DOAS) was discussed. The actualization method of the nocuous gas detection in the long - distance area was put forward. The trace intrusion gases detection method with wide spectrum light beam, a series of optical apparatus and DOAS computing were introduced. The potential technologies and instrument in the future were prospected.

  8. Built-in hyperspectral camera for smartphone in visible, near-infrared and middle-infrared lights region (third report): spectroscopic imaging for broad-area and real-time componential analysis system against local unexpected terrorism and disasters

    Science.gov (United States)

    Hosono, Satsuki; Kawashima, Natsumi; Wollherr, Dirk; Ishimaru, Ichiro

    2016-05-01

    The distributed networks for information collection of chemical components with high-mobility objects, such as drones or smartphones, will work effectively for investigations, clarifications and predictions against unexpected local terrorisms and disasters like localized torrential downpours. We proposed and reported the proposed spectroscopic line-imager for smartphones in this conference. In this paper, we will mention the wide-area spectroscopic-image construction by estimating 6 DOF (Degrees Of Freedom: parallel movements=x,y,z and rotational movements=θx, θy, θz) from line data to observe and analyze surrounding chemical-environments. Recently, smartphone movies, what were photographed by peoples happened to be there, had worked effectively to analyze what kinds of phenomenon had happened around there. But when a gas tank suddenly blew up, we did not recognize from visible-light RGB-color cameras what kinds of chemical gas components were polluting surrounding atmospheres. Conventionally Fourier spectroscopy had been well known as chemical components analysis in laboratory usages. But volatile gases should be analyzed promptly at accident sites. And because the humidity absorption in near and middle infrared lights has very high sensitivity, we will be able to detect humidity in the sky from wide field spectroscopic image. And also recently, 6-DOF sensors are easily utilized for estimation of position and attitude for UAV (Unmanned Air Vehicle) or smartphone. But for observing long-distance views, accuracies of angle measurements were not sufficient to merge line data because of leverage theory. Thus, by searching corresponding pixels between line spectroscopic images, we are trying to estimate 6-DOF in high accuracy.

  9. Modeling of Microwave Semiconductor Diodes

    Directory of Open Access Journals (Sweden)

    Z. Raida

    2008-09-01

    Full Text Available The paper deals with the multi-physical mode-ling of microwave diodes. The electrostatic, drift-diffusion and thermal phenomena are considered in the physical model of the components. The basic semiconductor equati-ons are summarized, and modeling issues are discussed. The simulations of the Gunn Effect in transferred electron devices and the carrier injection effect in PIN diodes are investigated and discussed. The analysis was performed in COMSOL Multiphysics using the finite element method.

  10. Diode-pumped dye laser

    Science.gov (United States)

    Burdukova, O. A.; Gorbunkov, M. V.; Petukhov, V. A.; Semenov, M. A.

    2016-10-01

    This letter reports diode pumping for dye lasers. We offer a pulsed dye laser with an astigmatism-compensated three-mirror cavity and side pumping by blue laser diodes with 200 ns pulse duration. Eight dyes were tested. Four dyes provided a slope efficiency of more than 10% and the highest slope efficiency (18%) was obtained for laser dye Coumarin 540A in benzyl alcohol.

  11. Ghost imaging with broad distance

    Institute of Scientific and Technical Information of China (English)

    段德洋; 张路; 杜少将; 夏云杰

    2015-01-01

    We present a scheme that is able to achieve the ghost imaging with broad distance. The physical nature of our scheme is that the different wavelength beams are separated in free space by an optical media according to the slow light or dispersion principle. Meanwhile, the equality of the optical distance of the two light arms is not violated. The photon correlation is achieved by the rotating ground glass plate (RGGP) and spatial light modulator (SLM), respectively. Our work shows that a monochromic ghost image can be obtained in the case of RGGP. More importantly, the position (or distance) of the object can be ascertained by the color of the image. Thus, the imaging and ranging processes are combined as one process for the first time to the best of our knowledge. In the case of SLM, we can obtain a colored image regardless of where the object is.

  12. Light Emitting Diodes (LEDs)

    Science.gov (United States)

    1997-01-01

    A special lighting technology was developed for space-based commercial plant growth research on NASA's Space Shuttle. Surgeons have used this technology to treat brain cancer on Earth, in two successful operations. The treatment technique, called Photodynamic Therapy, requires the surgeon to use tiny, pinhead-size Light Emitting Diodes (LEDs) (a source that releases long wavelengths of light ) to activate light-sensitive, tumor-treating drugs. 'A young woman operated on in May 1999 has fully recovered with no complications and no evidence of the tumor coming back,' said Dr. Harry Whelan, a pediatric neurologist at the Medical Hospital of Wisconsin in Milwaukee. Laser light has been used for this type of surgery in the past, but the LED light illuminates through all nearby tissues, reaching parts of a tumor that shorter wavelengths of laser light carnot. The new probe is safer because the longer wavelengths of light are cooler than the shorter wavelengths of laser light, making the LED less likely to injure normal brain tissue near the tumor. It can be used for hours at a time while still remaining cool to the touch. The LED light source is compact, about the size of a briefcase, and can be purchased for a fraction of the cost of a laser. The LEDs, developed and managed by NASA's Marshall Space Flight Center, have been used on seven Space Shuttle flights inside the Microgravity Astroculture Facility. This technology has also been successfully used to further commercial research in crop growth.

  13. Ghost imaging with broad distance

    Science.gov (United States)

    Duan, De-Yang; Zhang, Lu; Du, Shao-Jiang; Xia, Yun-Jie

    2015-10-01

    We present a scheme that is able to achieve the ghost imaging with broad distance. The physical nature of our scheme is that the different wavelength beams are separated in free space by an optical media according to the slow light or dispersion principle. Meanwhile, the equality of the optical distance of the two light arms is not violated. The photon correlation is achieved by the rotating ground glass plate (RGGP) and spatial light modulator (SLM), respectively. Our work shows that a monochromic ghost image can be obtained in the case of RGGP. More importantly, the position (or distance) of the object can be ascertained by the color of the image. Thus, the imaging and ranging processes are combined as one process for the first time to the best of our knowledge. In the case of SLM, we can obtain a colored image regardless of where the object is. Project supported by the National Natural Science Foundation of China (Grant Nos. 61178012, 11204156, 11304179, and 11247240), the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant Nos. 20133705110001 and 20123705120002), the Scientific Research Foundation for Outstanding Young Scientists of Shandong Province, China (Grant No. BS2013DX034), and the Natural Science Foundation of Shandong Province, China (Grant No. ZR2012FQ024).

  14. Al-free active region laser diodes at 894 nm for compact Cesium atomic clocks

    Science.gov (United States)

    Von Bandel, N.; Bébé Manga Lobé, J.; Garcia, M.; Larrue, A.; Robert, Y.; Vinet, E.; Lecomte, M.; Drisse, O.; Parillaud, O.; Krakowski, M.

    2015-03-01

    Time-frequency applications are in need of high accuracy and high stability clocks. Compact industrial Cesium atomic clocks optically pumped is a promising area that could satisfy these demands. However, the stability of these clocks relies, among others, on the performances of laser diodes that are used for atomic pumping. This issue has led the III-V Lab to commit to the European Euripides-LAMA project that aims to provide competitive compact optical Cesium clocks for earth applications. This work will provide key experience for further space technology qualification. We are in charge of the design, fabrication and reliability of Distributed-Feedback diodes (DFB) at 894nm (D1 line of Cesium) and 852nm (D2 line). The use of D1 line for pumping will provide simplified clock architecture compared to D2 line pumping thanks to simpler atomic transitions and larger spectral separation between lines in the 894nm case. Also, D1 line pumping overcomes the issue of unpumped "dark states" that occur with D2 line. The modules should provide narrow linewidth (<1MHz), very good reliability in time and, crucially, be insensitive to optical feedback. The development of the 894nm wavelength is grounded on our previous results for 852nm DFB. Thus, we show our first results from Al-free active region with InGaAsP quantum well broad-area lasers (100μm width, with lengths ranging from 2mm to 4mm), for further DFB operation at 894nm. We obtained low internal losses below 2cm-1, the external differential efficiency is 0.49W/A with uncoated facets and a low threshold current density of 190A/cm², for 2mm lasers at 20°C.

  15. 78 FR 20119 - Broad Stakeholder Survey

    Science.gov (United States)

    2013-04-03

    ... SECURITY Broad Stakeholder Survey AGENCY: National Protection and Programs Directorate, DHS. ACTION: 30-day... soliciting comments concerning the Broad Stakeholder Survey. DHS previously published this ICR in the Federal... responders across the Nation. The Broad Stakeholder Survey is designed to gather stakeholder feedback on...

  16. 77 FR 50144 - Broad Stakeholder Survey

    Science.gov (United States)

    2012-08-20

    ... SECURITY Broad Stakeholder Survey AGENCY: National Protection and Programs Directorate, DHS. ACTION: 60-day... comments concerning the Broad Stakeholder Survey. DATES: Comments are encouraged and will be accepted until... across the Nation. The Broad Stakeholder Survey is designed to gather stakeholder feedback on...

  17. 76 FR 34087 - Broad Stakeholder Survey

    Science.gov (United States)

    2011-06-10

    ... SECURITY Broad Stakeholder Survey AGENCY: National Protection and Programs Directorate, DHS. ACTION: 60-day... comments concerning the Broad Stakeholder Survey. DATES: Comments are encouraged and will be accepted until.... The Broad Stakeholder Survey is designed to gather stakeholder feedback on the effectiveness of...

  18. Broad and focused ion beams Ga+ implantation damage in the fabrication of p+-n Si shallow junctions

    International Nuclear Information System (INIS)

    The use of focused and broad beam Ga+ implantation for the fabrication of p+-n Si shallow junctions is explored. In particular, the issue of ion induced damage and its effect on diode electrical properties is explored. FIB-fabricated junctions exhibit a deeper junction with lower sheet resistance and higher leakage current than the BB-implanted diodes. TEM analysis exhibits similar amorphization and recrystallization behavior for both implantation techniques with the BB case generating a higher dislocation loop density after a 900 degree C anneal. 6 refs., 5 figs., 1 tab

  19. Terahertz Emission from Resonant Tunneling Diodes without Satisfying Oscillation Condition

    Science.gov (United States)

    Asada, Masahiro; Kanaya, Hidetoshi; Suzuki, Safumi

    2013-10-01

    Terahertz (THz) emission from resonant tunneling diodes (RTDs) is normally obtained under the oscillation condition in which the negative differential conductance (NDC) exceeds the circuit loss. In this study, we show that a relatively broad band THz emission was observed even for RTDs with an NDC smaller than the circuit loss. The observed output power was on the order of 1-10 nW at 1.2-1.9 THz with spectral widths of 50-100 GHz. The observation was reasonably explained by the theoretical calculation based on the shot noise amplified by the NDC. This emission corresponds to the amplified spontaneous emission in optical devices.

  20. A multi-source portable light emitting diode spectrofluorometer.

    Science.gov (United States)

    Obeidat, Safwan; Bai, Baolong; Rayson, Gary D; Anderson, Dean M; Puscheck, Adam D; Landau, Serge Y; Glasser, Tzach

    2008-03-01

    A portable luminescence spectrofluorometer weighing only 1.5 kg that uses multiple light emitting diodes (LEDs) as excitation sources was developed and evaluated. Excitation using a sequence of seven individual broad-band LED emission sources enabled the generation of excitation-emission spectra using a light weight (pistache or Mastic) and Philyria latifolia, and the herbaceous species Medicago sativa (alfalfa), Trifolium spp. (clover), and a feed concentrate. Application of multi-way principal component analysis (MPCA) to the resulting three-dimensional data sets enabled discernment among these various diet constituents. PMID:18339242

  1. Few-photon optical diode

    OpenAIRE

    Roy, Dibyendu

    2010-01-01

    We propose a novel scheme of realizing an optical diode at the few-photon level. The system consists of a one-dimensional waveguide coupled asymmetrically to a two-level system. The two or multi-photon transport in this system is strongly correlated. We derive exactly the single and two-photon current and show that the two-photon current is asymmetric for the asymmetric coupling. Thus the system serves as an optical diode which allows transmission of photons in one direction much more efficie...

  2. Spin-photon entangling diode

    DEFF Research Database (Denmark)

    Flindt, Christian; Sørensen, A. S.; Lukin, M. D.;

    2007-01-01

    We propose a semiconductor device that can electrically generate entangled electron spin-photon states, providing a building block for entanglement of distant spins. The device consists of a p-i-n diode structure that incorporates a coupled double quantum dot. We show that electronic control...... of the diode bias and local gating allow for the generation of single photons that are entangled with a robust quantum memory based on the electron spins. Practical performance of this approach to controlled spin-photon entanglement is analyzed....

  3. Few-photon optical diode

    International Nuclear Information System (INIS)

    We propose a scheme of realizing an optical diode at the few-photon level. The system consists of a one-dimensional waveguide coupled asymmetrically to a two-level system. The two or multiphoton transport in this system is strongly correlated. We derive exactly the single and two-photon current and show that the two-photon current is asymmetric for the asymmetric coupling. Thus the system serves as an optical diode which allows transmission of photons in one direction much more efficiently than the opposite.

  4. Few-photon optical diode

    CERN Document Server

    Roy, Dibyendu

    2010-01-01

    We propose a novel scheme of realizing an optical diode at the few-photon level. The system consists of a one-dimensional waveguide coupled asymmetrically to a two-level system. The two or multi-photon transport in this system is strongly correlated. We derive exactly the single and two-photon current and show that the two-photon current is asymmetric for the asymmetric coupling. Thus the system serves as an optical diode which allows transmission of photons in one direction much more efficiently than the opposite.

  5. High power collimated diode laser stack

    Institute of Scientific and Technical Information of China (English)

    LIU Yuan-yuan; FANG Gao-zhan; MA Xiao-yu; LIU Su-ping; FENG Xiao-ming

    2006-01-01

    A high power collimated diode laser stack is carried out based on fast-axis collimation and stack packaging techniques.The module includes ten typical continuous wave (cw) bars and the total output power can be up to 368W at 48.6A.Using a cylindrical lens as the collimation elements,we can make the fast-axis divergence and the slow-axis divergence are 0.926 40 and 8.2060 respectively.The light emitting area is limited in a square area of 18.3 mm×11 mm.The module has the advantage of high power density and offers a wide potential applications in pumping and material processing.

  6. Advances in Diode-Laser-Based Water Vapor Differential Absorption Lidar

    Science.gov (United States)

    Spuler, Scott; Repasky, Kevin; Morley, Bruce; Moen, Drew; Weckwerth, Tammy; Hayman, Matt; Nehrir, Amin

    2016-06-01

    An advanced diode-laser-based water vapor differential absorption lidar (WV-DIAL) has been developed. The next generation design was built on the success of previous diode-laser-based prototypes and enables accurate measurement of water vapor closer to the ground surface, in rapidly changing atmospheric conditions, and in daytime cloudy conditions up to cloud base. The lidar provides up to 1 min resolution, 150 m range resolved measurements of water vapor in a broad range of atmospheric conditions. A description of the instrument and results from its initial field test in 2014 are discussed.

  7. Characterization of Stock Blu-ray diodes

    Science.gov (United States)

    Cunningham, Mark; Archibald, James; Erickson, Christopher; Durfee, Dallin

    2010-10-01

    I am developing a process to test and characterize diodes of unknown wavelengths. using a B&WTEK Spectrometer we are characterizing the wavelength of 405 nm blu-ray diodes purchased in bulk. With the known error in production of the Diode Lasers we are hoping to find a diode at 408 nm to use in driving a raman transition between hyperfine states of strontium 87 ions. The bulk of the project is a java program that communicates with the spectrometer and graphically displays the intensities of the wavelengths from the laser diodes.

  8. Handbook of distributed feedback laser diodes

    CERN Document Server

    Morthier, Geert

    2013-01-01

    Since the first edition of this book was published in 1997, the photonics landscape has evolved considerably and so has the role of distributed feedback (DFB) laser diodes. Although tunable laser diodes continue to be introduced in advanced optical communication systems, DFB laser diodes are still widely applied in many deployed systems. This also includes wavelength tunable DFB laser diodes and DFB laser diode arrays, usually integrated with intensity or phase modulators and semiconductor optical amplifiers.This valuable resource gives professionals a comprehensive description of the differen

  9. Pulsed power supply system of magnetic field coils of ion diode

    International Nuclear Information System (INIS)

    The pulsed power system of magnetic coils of an ion diode with external magnetic insulation (IDM), which ensures operation of the diode in the frequency mode, is described. Demands are formulated for the IDM magnetic field in which the electronic cloud acting as a cathode in the diode is formed as well as for storage conditions of the negative charge in the magnetic field for neutralizing the ion beam in the ion-beam drift area. The basic relationships required for engineering calculations of the IDM coils and a pulsed power system in the frequency mode are given

  10. Operational characteristics and analysis of the immersed-Bz diode on RITS-3.

    Energy Technology Data Exchange (ETDEWEB)

    Bruner, Nichelle " Nicki" ; Oliver, Bryan Velten; Portillo, Salvador; Puetz, Elizabeth A.; Johnston, Mark D.; Welch, Dale Robert; Rose, David Vincent; Cooper, G.M. (AWE, Aldermaston, Reading, United Kingdom); McLean, John (AWE, Aldermaston, Reading, United Kingdom); Rovang, Dean Curtis; Maenchen, John Eric

    2006-02-01

    The immersed-B{sub z} diode is being developed as a high-brightness, flash x-ray radiography source. This diode is a foil-less electron-beam diode with a long, thin, needle-like cathode inserted into the bore of a solenoid. The solenoidal magnetic field guides the electron beam emitted from the cathode to the anode while maintaining a small beam radius. The electron beam strikes a thin, high-atomic-number anode and produces bremsstrahlung. We report on an extensive series of experiments where an immersed-B{sub z} diode was fielded on the RITS-3 pulsed power accelerator, a 3-cell inductive voltage generator that produced peak voltages between 4 and 5 MV, {approx}140 kA of total current, and power pulse widths of {approx}50 ns. The diode is a high impedance device that, for these parameters, nominally conducts {approx}30 kA of electron beam current. Diode operating characteristics are presented and two broadly characterized operating regimes are identified: a nominal operating regime where the total diode current is characterized as classically bipolar and an anomalous impedance collapse regime where the total diode current is in excess of the bipolar limit and up to the full accelerator current. The operating regimes are approximately separated by cathode diameters greater than {approx}3 mm for the nominal regime and less than {approx} 3 mm for the anomalous impedance collapse regime. This report represents a compilation of data taken on RITS-3. Results from key parameter variations are presented in the main body of the report and include cathode diameter, anode-cathode gap, and anode material. Results from supporting parameter variations are presented in the appendices and include magnetic field strength, prepulse, pressure and accelerator variations.

  11. New Two-Diode Model for Detailed Analysis of Multicrystalline Silicon Solar Cells

    Science.gov (United States)

    Kurobe, Ken-ichi; Matsunami, Hiroyuki

    2005-12-01

    In order to extract electrical properties of multicrystalline silicon (Mx-Si) solar cells precisely, current-voltage (I-V) measurement in the dark condition was carried out. A new two-diode model, which includes a diffusion-current dominant area (DCA) and a recombination-current dominant area (RCA), with nonequivalent series resistances, was proposed as a new equivalent circuit. Electrical properties as fitting parameters were successfully extracted using a successive approximation method. This characterization derived J01 and J02, which are the diode saturation current densities for n=1 and 2 diodes, respectively. To ensure this diode model, temperature characteristics were measured, and the validity of this model was shown through calculation of the energy band gap from J01. J01 and J02 indicate a power factor and a loss factor of solar cells, respectively, which are newly proposed to classify solar cell performance.

  12. A broad view of arsenic.

    Science.gov (United States)

    Jones, F T

    2007-01-01

    In the mind of the general public, the words "arsenic" and "poison" have become almost synonymous. Yet, As is a natural metallic element found in low concentrations in virtually every part of the environment, including foods. Mining and smelting activities are closely associated with As, and the largest occurrence of As contamination in the United States is near the gold mines of northern Nevada. Inhabitants of Bangladesh and surrounding areas have been exposed to water that is naturally and heavily contaminated with As, causing what the World Health Organization has described as the worst mass poisoning in history. Although readily absorbed by humans, most inorganic As (>90%) is rapidly cleared from the blood with a half-life of 1 to 2 h, and 40 to 70% of the As intake is absorbed, metabolized, and excreted within 48 h. Arsenic does not appreciably bioaccumulate, nor does it biomagnify in the food chain. The United States has for some time purchased more As than any other country in the world, but As usage is waning, and further reductions appear likely. Arsenic is used in a wide variety of industrial applications, from computers to fireworks. All feed additives used in US poultry feeds must meet the strict requirements of the US Food and Drug Administration Center for Veterinary Medicine (Rockville, MD) before use. Although some public health investigators have identified poultry products as a potentially significant source of total As exposure for Americans, studies consistently demonstrate that <1% of samples tested are above the 0.5 ppm limit established by the US Food and Drug Administration Center for Veterinary Medicine. Although laboratory studies have demonstrated the possibility that As in poultry litter could pollute ground waters, million of tons of litter have been applied to the land, and no link has been established between litter application and As contamination of ground water. Yet, the fact that <2% of the United States population is involved in

  13. Neutralization of low energy broad ion beam

    International Nuclear Information System (INIS)

    The paper is devoted to experimental and theoretical investigation of a low energy broad ion beam space charge and current compensation and ion-beam plasma (IBP), which would be created in transport space of the beam. The beam had cylindrical symmetry. The continuous uniform and hole tube like ion beams are used in the experiments. Different channels of electron appearing have been investigated for cases of neutralization due to secondary γ-electrons from the target and by electrons from glow cathode-neutralizer with metal or dielectric target. Results of neutralizing electrons energy distributions function measurements are presented as well as dependences of electron temperature and self-consisted plasma potential vs. beam parameters, ambient gas pressure, neutralizer parameters. Role of the thermoelectrons and dependence of IBP parameters on neutralizer area, location and potential are discussed. Significant role in neutralization of spatial collisional processes has been revealed even in neutralization by thermocathode. On the base of the experimental results self-consistent theoretical model have been developed, which describes the behavior of intense ion beam passing through the neutral gas at low pressure within conductive walls. The collisionless approach is used which means absence of collisional relaxation of the beam. This theory is used to derive the plasma potential and electron temperature within the beam

  14. Finite Element Analysis Of Thermal Transients In Multi-Stripe Laser Diode Arrays

    Science.gov (United States)

    Lippincott, Wendy L.; Clement, Anne E.

    1989-05-01

    The NASTRAN finite element code was used to simulate the temperature transients in the active area of laser diode arrays caused by driving the array with a pulsed waveform. A ten-stripe multi-quantum-well (MQW) structure was used. The thermal impedance of the array was also determined and compared to experimental values obtained by monitoring the threshold dependance of the device during pulsed and cw operation. The single-stripe diode was also modeled for comparison purposes.

  15. Operation of a high repetition rate intense ion beam diode

    International Nuclear Information System (INIS)

    A magnetically insulated diode has been developed that is capable of pulsing at high repetition rate for short bursts. This diode has a plasma-anode ion source which originates as an annular puff of H2 or some other gas. The gas puff is preionized and then inductively broken down by a 1 μs rise time magnetic field coil. This same field coil magnetically drives the resulting plasma toward a magnetically insulated acceleration gap. Finally, a ∼ 100 kV, 20--40 kA, approx-lt 100 ns acceleration voltage pulse is applied to the gap to generate the beam. The annular plasma has a mean radius of 8.5 cm, and the ion beam is extracted from an area of approx-lt 200 cm2. The pulsed power systems that drive this diode at high repetition rates are based upon saturable inductor switching. The anode plasma's temperature and density, as measured by spectroscopic techniques, is reported as a function of repetition rate and shot number within a burst. How the plasma parameters vary with diode operating conditions, such as gas puff pressure or insulating field strength, are also presented. In addition, these plasma parameters are compared with the parameters of the extracted beam

  16. Diode-laser-based therapy device

    Science.gov (United States)

    Udrea, Mircea V.; Nica, Adriana S.; Florian, Mariana; Poenaru, Daniela; Udrea, Gabriela; Lungeanu, Mihaela; Sporea, Dan G.; Vasiliu, Virgil V.; Vieru, Roxana

    2004-10-01

    A new therapy laser device is presented. The device consists of a central unit and different types of laser probes. The laser probe model SL7-650 delivers seven red (650 nm), 5 mW diode lasers convergent beams. The beams converge at about 30 cm in front of the laser probe and the irradiated area might be varied by simple displacement of the laser probe with respect to the target. The laser probe SL1-808 emits single infrared laser beam up to 500 mW. The efficiency of the use of this device in physiotherapy, and rheumatology, has been put into evidence after years of testing. Dermatology and microsurgery are users of infrared powerful laser probes. The device has successfully passed technical and clinical tests in order to be certified. The laser device design and some medical results are given.

  17. Destructive Single-Event Failures in Diodes

    Science.gov (United States)

    Casey, Megan C.; Gigliuto, Robert A.; Lauenstein, Jean-Marie; Wilcox, Edward P.; Kim, Hak; Chen, Dakai; Phan, Anthony M.; LaBel, Kenneth A.

    2013-01-01

    In this summary, we have shown that diodes are susceptible to destructive single-event effects, and that these failures occur along the guard ring. By determining the last passing voltages, a safe operating area can be derived. By derating off of those values, rather than by the rated voltage, like what is currently done with power MOSFETs, we can work to ensure the safety of future missions. However, there are still open questions about these failures. Are they limited to a single manufacturer, a small number, or all of them? Is there a threshold rated voltage that must be exceeded to see these failures? With future work, we hope to answer these questions. In the full paper, laser results will also be presented to verify that failures only occur along the guard ring.

  18. Design and evaluation of the XBT diode

    International Nuclear Information System (INIS)

    This paper describes the design and experimental results achieved with the 440 kV, microperveance 1.9, XBT (X-band Beam Tester) diode. The Pierce gun was developed for the 100 MW X-band klystron; the high power RF source to be used on the NLC (Next Linear Collider). The gun is electrostatically focused (no magnetic compression) to a beam diameter of 6.35 mm, with an area convergence of 110:1. Maximum cathode loading is approximately 25 A/cm2, with a beam power density of 770 MW/cm2. The measured beam current was within 2% of the value predicted by simulation with EGUN. Transmission through the highly instrumented beam tester was 99.98%. Some novel techniques were used to achieve near perfect beam transmission, which include the use of a reentrant-floating input pole piece

  19. Broad Prize: Do the Successes Spread?

    Science.gov (United States)

    Samuels, Christina A.

    2011-01-01

    When the Broad Prize for Urban Education was created in 2002, billionaire philanthropist Eli Broad said he hoped the awards, in addition to rewarding high-performing school districts, would foster healthy competition; boost the prestige of urban education, long viewed as dysfunctional; and showcase best practices. Over the 10 years the prize has…

  20. ORGANIC LIGHT EMITTING DIODE (OLED

    Directory of Open Access Journals (Sweden)

    Aririguzo Marvis Ijeaku

    2015-09-01

    Full Text Available An Organic Light Emitting Diode (OLED is a device composed of an organic layer that emits lights in response to an electrical current. Organic light emitting diodes have advanced tremendously over the past decades. The different manufacturing processes of the OLED itself to several advantages over flat panel displays made with LCD technology which includes its light weight and flexible plastic substrates, wider viewing angles, improved brightness, better power efficiency and quicker response time. However, its drawbacks include shorter life span, poor color balance, poor outdoor performance, susceptibility to water damage etc.The application of OLEDs in electronics is on the increase on daily basics from cameras to cell phones to OLED televisions, etc. Although OLEDs provides prospects for thinner, smarter, lighter and ultraflexible electronics displays, however, due to high cost of manufacturing, it is not yet widely used.

  1. Megahertz organic/polymer diodes

    Science.gov (United States)

    Katz, Howard Edan; Sun, Jia; Pal, Nath Bhola

    2012-12-11

    Featured is an organic/polymer diode having a first layer composed essentially of one of an organic semiconductor material or a polymeric semiconductor material and a second layer formed on the first layer and being electrically coupled to the first layer such that current flows through the layers in one direction when a voltage is applied in one direction. The second layer is essentially composed of a material whose characteristics and properties are such that when formed on the first layer, the diode is capable of high frequency rectifications on the order of megahertz rectifications such as for example rectifications at one of above 100KHz, 500KhZ, IMHz, or 10 MHz. In further embodiments, the layers are arranged so as to be exposed to atmosphere.

  2. Single-electron heat diode

    OpenAIRE

    Ruokola, Tomi; Ojanen, Teemu

    2011-01-01

    We introduce a new functional nanoscale device, a single-electron heat diode, consisting of two quantum dots or metallic islands coupled to electronic reservoirs by tunnel contacts. Electron transport through the system is forbidden but the capacitive coupling between the two dots allows electronic fluctuations to transmit heat between the reservoirs. When the reservoir temperatures are biased in the forward direction, heat flow is enabled by a four-step sequential tunneling cycle, while in t...

  3. Optimization of Quantum-Dot Molecular Beam Epitaxy for Broad Spectral Bandwidth Devices

    KAUST Repository

    Majid, M. A.

    2012-12-01

    The optimization of the key growth parameters for broad spectral bandwidth devices based on quantum dots is reported. A combination of atomic force microscopy, photoluminescence of test samples, and optoelectronic characterization of superluminescent diodes (SLDs) is used to optimize the growth conditions to obtain high-quality devices with large spectral bandwidth, radiative efficiency (due to a reduced defective-dot density), and thus output power. The defective-dot density is highlighted as being responsible for the degradation of device performance. An SLD device with 160 nm of bandwidth centered at 1230 nm is demonstrated.

  4. P-N junction and metal contact reliability of SiC diode in high temperature (873 K) environment

    Science.gov (United States)

    Chand, R.; Esashi, M.; Tanaka, S.

    2014-04-01

    This paper reports the high temperature test results of SiC p-n junction diode up to 873 K. No significant change in diode series resistance (Rs) and a diode ideality factor of 1.02 were confirmed in air. We used the 4H-SiC diode which had a contact pad area of 300 μm × 300 μm and a junction area of 220 μm × 220 μm. Ohmic contact on both p and n (i.e. front and back) sides were made by Ni, because nickel silicide (NiSi) provides good ohmic contact for high temperature applications. The electrical contact pads of the SiC diode were made by sputter-depositing Ni or Pt on the NiSi ohmic contact. High temperature aging tests at 673 K, 773 K and 873 K were carried out in air, and the forward current-voltage (I-V) characteristics of the SiC diodes were measured at different time intervals to observe change in the junction and series resistance. Stable p-n junction characteristic and constant series resistance were confirmed for the Pt-metalized diodes at 673 K, 773 K and 873 K. However, the Ni-metallized diodes showed marginal increase in series resistance due to the oxidation of Ni metal contacts.

  5. Changes in Cell Viability of Wounded Fibroblasts following Laser Irradiation in Broad-Spectrum or Infrared Light

    OpenAIRE

    Hawkins, Denise; Abrahamse, Heidi

    2007-01-01

    Objective. This study aimed to establish if broad-spectrum or infrared (IR) light in combination with laser therapy can assist phototherapy to improve the cell function of wounded cells. Background. The effect of laser light may be partly or completely reduced by broad-spectrum light. Methods. Wounded human skin fibroblasts were irradiated with 5 J/cm2 using a helium-neon laser, a diode laser, or an Nd:YAG laser in the dark, in the light, or in IR. Changes in cell viability were evaluated by ...

  6. The Simulation of Resonant Tunneling Diodes

    OpenAIRE

    Gilbertson, Woodrow A; Long, Pengyu; Fonseca, Jim; Klimeck, Gerhard

    2014-01-01

    The goal of this project is to improve the simulation of an electrical device known as a Resonant Tunneling Diode (RTD). Diodes are in most electronic devices today, but RTDs have 10 times greater switching speeds than regular diodes. This increase in efficiency would have impacts from supercomputers to the next big cell phone. The increased functionality of the simulation tool will come from implementing more recent mathematical solvers and modeling techniques. The simulation tool makes use ...

  7. Electromagnetic wave analogue of electronic diode

    OpenAIRE

    Shadrivov, Ilya V.; Powell, David A.; Kivshar, Yuri S.; Fedotov, Vassili A.; Zheludev, Nikolay I.

    2010-01-01

    An electronic diode is a nonlinear semiconductor circuit component that allows conduction of electrical current in one direction only. A component with similar functionality for electromagnetic waves, an electromagnetic isolator, is based on the Faraday effect of the polarization state rotation and is also a key component of optical and microwave systems. Here we demonstrate a chiral electromagnetic diode, which is a direct analogue of an electronic diode: its functionality is underpinned by ...

  8. Quantum optical diode with semiconductor microcavities

    OpenAIRE

    Shen, H. Z.; Zhou, Y.H.; Yi, X. X.

    2014-01-01

    The semiconductor diode, which acts as an electrical rectifier and allows unidirectional electronic transports, is the key to information processing in integrated circuits. Analogously, an optical rectifier (or diode) working at specific target wavelengths has recently becomes a dreaming device in optical communication and signal processing. In this paper, we propose a scheme to realize an optical diode for photonic transport at the level of few photons. The system consists of two spatially o...

  9. Numerical simulation of spherical plasma focus diode

    International Nuclear Information System (INIS)

    A self-magnetically insulated, three-dimensionally-focused ion-beam diode, spherical plasma focus diode (SPFD), is studied by numerical simulation using a two-dimensional, electromagnetic, relativistic particle-in-cell computer code. The calculated results of the diode impedance, the ion-current efficiency, and the focusing characteristics of the ion beam are presented. These results, except the data of the ion-beam current, are in good agreement with the experimental results. (author)

  10. Focusing experiments with light ion diodes

    International Nuclear Information System (INIS)

    A review of recent experimental and theoretical work at Sandia Laboratories on magnetically insulated single stage ion diodes for inertial confinement fusion experiments is presented. The production, focusing, and numerical simulation of a 0.5 TW annular proton beam using the Proto I dual transmission line generator is described. The modular magnetically insulated ion diode for the Hydra generator is also described along with recent experimental results. A brief description of how an array of modular diodes similar to the Hydra magnetically insulated diode could be used on the EBFA I generator for breakeven fusion experiments is presented

  11. All-carbon nanotube diode and solar cell statistically formed from macroscopic network

    Institute of Scientific and Technical Information of China (English)

    Albert G. Nasibulin[1,2,3; Adinath M. Funde[3,4; Ilya V. Anoshkin[3; Igor A. Levitskyt[5,6

    2015-01-01

    Schottky diodes and solar cells are statistically created in the contact area between two macroscopic films of single-walled carbon nanotubes (SWNTs) at the junction of semiconducting and quasi-metallic bundles consisting of several high quality tubes. The n-doping of one of the films allows for photovoltaic action, owing to an increase in the built-in potential at the bundle-to-bundle interface. Statistical analysis demonstrates that the Schottky barrier device contributes significantly to the I-V characteristics, compared to the p-n diode. The upper limit of photovoltaic conversion efficiency has been estimated at N20%, demonstrating that the light energy conversion is very efficient for such a unique solar cell. While there have been multiple studies on rectifying SWNT diodes in the nanoscale environment, this is the first report of a macroscopic all-carbon nanotube diode and solar cell.

  12. Advancement of High Power Quasi-CW Laser Diode Arrays For Space-based Laser Instruments

    Science.gov (United States)

    Amzajerdian, Farzin; Meadows, Byron L.; Baker, nathaniel R.; Baggott, Renee S.; Singh, Upendra N.; Kavaya, Michael J.

    2004-01-01

    Space-based laser and lidar instruments play an important role in NASA s plans for meeting its objectives in both Earth Science and Space Exploration areas. Almost all the lidar instrument concepts being considered by NASA scientist utilize moderate to high power diode-pumped solid state lasers as their transmitter source. Perhaps the most critical component of any solid state laser system is its pump laser diode array which essentially dictates instrument efficiency, reliability and lifetime. For this reason, premature failures and rapid degradation of high power laser diode arrays that have been experienced by laser system designers are of major concern to NASA. This work addresses these reliability and lifetime issues by attempting to eliminate the causes of failures and developing methods for screening laser diode arrays and qualifying them for operation in space.

  13. Broad Consent For Research With Biological Samples: Workshop Conclusions

    Science.gov (United States)

    Grady, Christine; Eckstein, Lisa; Berkman, Ben; Brock, Dan; Cook-Deegan, Robert; Fullerton, Stephanie M.; Greely, Hank; Hansson, Mats G.; Hull, Sara; Kim, Scott; Lo, Bernie; Pentz, Rebecca; Rodriguez, Laura; Weil, Carol; Wilfond, Benjamin S.; Wendler, David

    2016-01-01

    Different types of consent are used to obtain human biospecimens for future research. This variation has resulted in confusion regarding what research is permitted, inadvertent constraints on future research, and research proceeding without consent. The NIH Clinical Center’s Department of Bioethics held a workshop to consider the ethical acceptability of addressing these concerns by using broad consent for future research on stored biospecimens. Multiple bioethics scholars, who have written on these issues, discussed the reasons for consent, the range of consent strategies, gaps in our understanding, and concluded with a proposal for broad initial consent coupled with oversight and, when feasible, ongoing provision of information to donors. The manuscript describes areas of agreement as well as areas that need more research and dialogue. Given recent proposed changes to the Common Rule, and new guidance regarding storing and sharing data and samples, this is an important and timely topic. PMID:26305750

  14. Measuring Prevention More Broadly, An Empirical...

    Data.gov (United States)

    U.S. Department of Health & Human Services — Measuring Prevention More Broadly, An Empirical Assessment of CHIPRA Core Measures Differences in CHIP design and structure, across states and over time, may limit...

  15. Mapping plant functional types over broad mountainous regions

    OpenAIRE

    Danlu Cai; Yanning Guan; Shan Guo; Chunyan Zhang; Klaus Fraedrich

    2014-01-01

    Research on global climate change requires plant functional type (PFT) products. Although several PFT mapping procedures for remote sensing imagery are being used, none of them appears to be specifically designed to map and evaluate PFTs over broad mountainous areas which are highly relevant regions to identify and analyze the response of natural ecosystems. We present a methodology for generating soft classifications of PFTs from remotely sensed time series that are based on a hierarchical s...

  16. Optical mode engineering and high power density per facet length (>8.4 kW/cm) in tilted wave laser diodes

    Science.gov (United States)

    Ledentsov, N. N.; Shchukin, V. A.; Maximov, M. V.; Gordeev, N. Y.; Kaluzhniy, N. A.; Mintairov, S. A.; Payusov, A. S.; Shernyakov, Yu. M.

    2016-03-01

    Tilted Wave Lasers (TWLs) based on optically coupled thin active waveguide and thick passive waveguide offer an ultimate solution for thick-waveguide diode laser, preventing catastrophic optical mirror damage and thermal smile in laser bars, providing robust operation in external cavity modules thus enabling wavelength division multiplexing and further increase in brightness enabling direct applications of laser diodes in the mainstream material processing. We show that by proper engineering of the waveguide one can realize high performance laser diodes at different tilt angles of the vertical lobes. Two vertical lobes directed at various angles (namely, +/-27° or +/-9°) to the junction plane are experimentally realized by adjusting the compositions and the thicknesses of the active and the passive waveguide sections. The vertical far field of a TWL with the two +/-9° vertical beams allows above 95% of all the power to be concentrated within a vertical angle below 25°, the fact which is important for laser stack applications using conventional optical coupling schemes. The full width at half maximum of each beam of the value of 1.7° evidences diffraction- limited operation. The broad area (50 μm) TWL chips at the cavity length of 1.5 mm reveal a high differential efficiency ~90% and a current-source limited pulsed power >42W for as-cleaved TWL device. Thus the power per facet length in a laser bar in excess of 8.4 kW/cm can be realized. Further, an ultimate solution for the smallest tilt angle is that where the two vertical lobes merge forming a single lobe directed at the zero angle is proposed.

  17. 33 CFR 110.27 - Lynn Harbor in Broad Sound, Mass.

    Science.gov (United States)

    2010-07-01

    ... 33 Navigation and Navigable Waters 1 2010-07-01 2010-07-01 false Lynn Harbor in Broad Sound, Mass. 110.27 Section 110.27 Navigation and Navigable Waters COAST GUARD, DEPARTMENT OF HOMELAND SECURITY ANCHORAGES ANCHORAGE REGULATIONS Special Anchorage Areas § 110.27 Lynn Harbor in Broad Sound, Mass. North...

  18. BROAD PHONEME CLASSIFICATION USING SIGNAL BASED FEATURES

    Directory of Open Access Journals (Sweden)

    Deekshitha G

    2014-12-01

    Full Text Available Speech is the most efficient and popular means of human communication Speech is produced as a sequence of phonemes. Phoneme recognition is the first step performed by automatic speech recognition system. The state-of-the-art recognizers use mel-frequency cepstral coefficients (MFCC features derived through short time analysis, for which the recognition accuracy is limited. Instead of this, here broad phoneme classification is achieved using features derived directly from the speech at the signal level itself. Broad phoneme classes include vowels, nasals, fricatives, stops, approximants and silence. The features identified useful for broad phoneme classification are voiced/unvoiced decision, zero crossing rate (ZCR, short time energy, most dominant frequency, energy in most dominant frequency, spectral flatness measure and first three formants. Features derived from short time frames of training speech are used to train a multilayer feedforward neural network based classifier with manually marked class label as output and classification accuracy is then tested. Later this broad phoneme classifier is used for broad syllable structure prediction which is useful for applications such as automatic speech recognition and automatic language identification.

  19. Electromagnetic wave analogue of an electronic diode

    International Nuclear Information System (INIS)

    An electronic diode is a nonlinear semiconductor circuit component that allows conduction of electrical current in one direction only. A component with similar functionality for electromagnetic waves, an electromagnetic isolator, is based on the Faraday effect of rotation of the polarization state and is also a key component in optical and microwave systems. Here we demonstrate a chiral electromagnetic diode, which is a direct analogue of an electronic diode: its functionality is underpinned by an extraordinarily strong nonlinear wave propagation effect in the same way as the electronic diode function is provided by the nonlinear current characteristic of a semiconductor junction. The effect exploited in this new electromagnetic diode is an intensity-dependent polarization change in an artificial chiral metamolecule. This microwave effect exceeds a similar optical effect previously observed in natural crystals by more than 12 orders of magnitude and a direction-dependent transmission that differs by a factor of 65.

  20. Electromagnetic wave analogue of electronic diode

    CERN Document Server

    Shadrivov, Ilya V; Kivshar, Yuri S; Fedotov, Vassili A; Zheludev, Nikolay I

    2010-01-01

    An electronic diode is a nonlinear semiconductor circuit component that allows conduction of electrical current in one direction only. A component with similar functionality for electromagnetic waves, an electromagnetic isolator, is based on the Faraday effect of the polarization state rotation and is also a key component of optical and microwave systems. Here we demonstrate a chiral electromagnetic diode, which is a direct analogue of an electronic diode: its functionality is underpinned by an extraordinary strong nonlinear wave propagation effect in the same way as electronic diode function is provided by a nonlinear current characteristic of a semiconductor junction. The effect exploited in this new electromagnetic diode is an intensity-dependent polarization change in an artificial chiral metamolecule. This microwave effect exceeds a similar optical effect previously observed in natural crystals by more than 12 orders of magnitude and a direction-dependent transmission that differing by a factor of 65.

  1. Laser diode package with enhanced cooling

    Science.gov (United States)

    Deri, Robert J.; Kotovsky, Jack; Spadaccini, Christopher M.

    2011-09-13

    A laser diode package assembly includes a reservoir filled with a fusible metal in close proximity to a laser diode. The fusible metal absorbs heat from the laser diode and undergoes a phase change from solid to liquid during the operation of the laser. The metal absorbs heat during the phase transition. Once the laser diode is turned off, the liquid metal cools off and resolidifies. The reservoir is designed such that that the liquid metal does not leave the reservoir even when in liquid state. The laser diode assembly further includes a lid with one or more fin structures that extend into the reservoir and are in contact with the metal in the reservoir.

  2. Giant Broad Line Regions in Dwarf Seyferts

    CERN Document Server

    Devereux, Nick

    2015-01-01

    High angular resolution spectroscopy obtained with the Hubble Space Telescope (HST) has revealed a remarkable population of galaxies hosting dwarf Seyfert nuclei with an unusually large broad-line region (BLR). These objects are remarkable for two reasons. Firstly, the size of the BLR can, in some cases, rival those seen in the most luminous quasars. Secondly, the size of the BLR is not correlated with the central continuum luminosity, an observation that distinguishes them from their reverberating counterparts. Collectively, these early results suggest that non-reverberating dwarf Seyferts are a heterogeneous group and not simply scaled versions of each other. Careful inspection reveals broad H Balmer emission lines with single peaks, double peaks, and a combination of the two, suggesting that the broad emission lines are produced in kinematically distinct regions centered on the black hole (BH). Because the gravitational field strength is already known for these objects, by virtue of knowing their BH mass, ...

  3. Study on Photon Sensitivity of Silicon Diodes Related to Materials Used for Shielding

    International Nuclear Information System (INIS)

    Large area Silicon diodes used in electronic neutron dosemeters have a significant over-response to X and gamma rays, highly non-linear at photon energies below 200 keV. This over-response to photons is proportional to the diodes active area and strongly affects the neutron sensitivity of such dosemeters. Since Silicon diodes are sensitive to light and electromagnetic fields, most diode detector assemblies are provided with a shielding, sometimes also used as radiation filter. In this paper, the influence of materials covering the diode's active area is investigated using the MCNP-4A code by estimating the photon induced pulses in a typical silicon wafer (300 μm thickness and 1 cm diameter) when provided with a front case cover. There have been simulated small-size diode front covers made of several materials with low neutron interaction cross-sections like aluminium, TEFLON, iron and lead. The estimated number of induced pulses in the silicon wafer is calculated for each type of shielding at normal photon incidence for several photon energies from 9.8 keV up to 1.15 MeV and compared with that in a bare silicon wafer. The simulated pulse height spectra show the origin of the photon induced pulses in silicon for each material used as protective cover: the photoelectric effect for low Z front case materials at low energy incident photons (up to about 65 keV) and the Compton and build-up effects for high Z case materials at higher photon energies. A simple means to lower and flatten the photon response of silicon diodes over an extended X and gamma rays energy range is proposed by designing a composed photon filter. (author)

  4. Study on photon sensitivity of silicon diodes related to materials used for shielding

    International Nuclear Information System (INIS)

    Large area silicon diodes used in electronic neutron dosemeters have a significant over-response to X- and gamma-rays, highly non-linear at photon energies below 200 keV. This over-response to photons is proportional to the diode's active area and strongly affects the neutron sensitivity of such dosemeters. Since silicon diodes are sensitive to light and electromagnetic fields, most diode detector assemblies are provided with a shielding, sometimes also used as radiation filter. In this paper, the influence of materials covering the diode's active area is investigated using the MCNP-4A code by estimating the photon induced pulses in a typical silicon wafer (300 μm thickness and 1 cm diameter) when provided with a front case cover. There have been simulated small-size diode front covers made of several materials with low neutron interaction cross-sections like aluminium, TEFLON, iron and lead. The estimated number of induced pulses in the silicon wafer is calculated for each type of shielding at normal photon incidence for several photon energies from 9.8 keV up to 1.15 MeV and compared with that in a bare silicon wafer. The simulated pulse height spectra show the origin of the photon-induced pulses in silicon for each material used as protective cover: the photoelectric effect for low Z front case materials at low-energy incident photons (up to about 65 keV) and the Compton and build-up effects for high Z case materials at higher photon energies. A simple means to lower and flatten the photon response of silicon diodes over an extended X- and gamma rays energy range is proposed by designing a composed photon filter. (author)

  5. Electrical and thermal finite element modeling of arc faults in photovoltaic bypass diodes.

    Energy Technology Data Exchange (ETDEWEB)

    Bower, Ward Isaac; Quintana, Michael A.; Johnson, Jay

    2012-01-01

    Arc faults in photovoltaic (PV) modules have caused multiple rooftop fires. The arc generates a high-temperature plasma that ignites surrounding materials and subsequently spreads the fire to the building structure. While there are many possible locations in PV systems and PV modules where arcs could initiate, bypass diodes have been suspected of triggering arc faults in some modules. In order to understand the electrical and thermal phenomena associated with these events, a finite element model of a busbar and diode was created. Thermoelectrical simulations found Joule and internal diode heating from normal operation would not normally cause bypass diode or solder failures. However, if corrosion increased the contact resistance in the solder connection between the busbar and the diode leads, enough voltage potentially would be established to arc across micron-scale electrode gaps. Lastly, an analytical arc radiation model based on observed data was employed to predicted polymer ignition times. The model predicted polymer materials in the adjacent area of the diode and junction box ignite in less than 0.1 seconds.

  6. Silicon micromachined broad band light source

    Science.gov (United States)

    George, Thomas (Inventor); Jones, Eric (Inventor); Tuma, Margaret L. (Inventor); Eastwood, Michael (Inventor); Hansler, Richard (Inventor)

    2004-01-01

    A micro electromechanical system (MEMS) broad band incandescent light source includes three layers: a top transmission window layer; a middle filament mount layer; and a bottom reflector layer. A tungsten filament with a spiral geometry is positioned over a hole in the middle layer. A portion of the broad band light from the heated filament is reflective off the bottom layer. Light from the filament and the reflected light of the filament are transmitted through the transmission window. The light source may operate at temperatures of 2500 K or above. The light source may be incorporated into an on board calibrator (OBC) for a spectrometer.

  7. Semiconductor diodes as cryogenic temperature sensors

    International Nuclear Information System (INIS)

    The diode temperature sensor makes use of the fact that, under conditions of constant forward current, the forward voltage of the diode junction increases with decreasing temperature. Some results in developing some types of semiconductor diodes, designed to act as cryogenic temperature sensors, were achieved since 1981, first in USA. All these sensors were of Ga-As type. Our first attempt in using semiconductor diodes as cryogenic sensors was in automatising the filling of a liquid nitrogen tank, where we used a germanium diode, EFD 106, made by IPRS Baneasa, as level sensor. Then we noticed the pronounced temperature dependence of the internal resistance of the diode and also the fact that the device has a sufficient mechanical stability at cryogenic temperatures. On this basis and taking into account the fact that the cryogenic temperature sensors (platinum, carbon or semiconductor thermo resistors and some sorts of special thermocouples) are expensive, we try to find out whether and how ordinary diodes could be used in low temperature thermometry. Using a Cryostat with EDWARDS Cryogenerator and ITC temperature regulator, an YEW Constant Current Source, a HP 3458A Programmable Multimeter, a Tektronix 576 Curve Tracer and a PC, we studied the temperature dependence of the BANEASA SA 1N4148 silicon diode forward tension in the range of 20 to 300 K. Two temperature characteristics were measured, at 10 μA and 100 μA bias current. The characteristics show a linear dependence of the forward tension of diode junction on temperature and also a good sensitivity, which decreases from 3 mV/K at 300 K, to 2 mV/K at 20 K, which is higher than the sensitivity of platinum thermo resistance at 1 mA bias current. We investigated also the diode sensitivity to bias current variations and we found a change of less than 0.1 K at 10% change in bias current, what is better than the same parameter in platinum thermo resistors. So, the constant current source for biasing a diode

  8. Spin injection in a ferromagnet/resonant tunneling diode heterostructure

    Institute of Scientific and Technical Information of China (English)

    Jin Bao; Fang Wan; Yu Wang; Xiaoguang Xu; Yong Jiang

    2008-01-01

    The spin transport property of a ferromagnet (FM)/insulator (I)/resonant tunneling diode (RTD) heterostructure was stud-ied. The transmission coefficient and spin polarization in a multilayered heterostructure was calculated by a Scbr(o)dinger wave equa-tion. An Airy function formalism approach was used to solve this equation. Based on the transfer matrix approach, the transmittivity of the structure was determined as a function of the Feimi energy and other parameters. The result shows that the spin polarization induced by the structure oscillates with the increasing Fermi energy of the FM layer. While the thickness of the RTD is reduced, the resonant peaks become broad. In the heterostructure, the spin polarization reaches as high as 40% and can be easily controlled by the external bias voltage.

  9. 946 nm Diode Pumped Laser Produces 100mJ

    Science.gov (United States)

    Axenson, Theresa J.; Barnes, Norman P.; Reichle, Donald J., Jr.

    2000-01-01

    An innovative approach to obtaining high energy at 946 nm has yielded 101 mJ of laser energy with an optical-to-optical slope efficiency of 24.5%. A single gain module resonator was evaluated, yielding a maximum output energy of 50 mJ. In order to obtain higher energy a second gain module was incorporated into the resonator. This innovative approach produced un-surprised output energy of 101 mJ. This is of utmost importance since it demonstrates that the laser output energy scales directly with the number of gain modules. Therefore, higher energies can be realized by simply increasing the number of gain modules within the laser oscillator. The laser resonator incorporates two gain modules into a folded "M-shaped" resonator, allowing a quadruple pass gain within each rod. Each of these modules consists of a diode (stack of 30 microlensed 100 Watt diode array bars, each with its own fiber lens) end-pumping a Nd:YAG laser rod. The diode output is collected by a lens duct, which focuses the energy into a 2 mm diameter flat to flat octagonal pump area of the laser crystal. Special coatings have been developed to mitigate energy storage problems, including parasitic lasing and amplified spontaneous emission (ASE), and encourage the resonator to operate at the lower gain transition at 946 nm.

  10. INFRARED DIODE LASER RETINAL TREATMENT FOR CHRONIC HEADACHE

    Directory of Open Access Journals (Sweden)

    Subba Rao

    2013-12-01

    Full Text Available ABSTRACT: Nearly 60 to 70 crores of people all over the world are suffering from various types of chronic headache. This is one of the commonest medical problems. To get relief from headache various medical treatments are used with little success. The aim of our study is to give permanent treatment to chronic headache patients by using infrared diode laser selective retinal photocoagulati on. NIDEK infrared diode laser with NIDEK SL40 slit - lamp and NIDEK digital fundus camera for retinal evaluation, MAINSTER 135D lens for laser beam focusing and retinal examination and TOPCON non - contact tonometer for intra ocular pressure measurements are used. Diode laser is chosen because of its deep penetration into all the layers of retina and choroid. 500 cases of chronic headache were studied. Laser photocoagulation was given in selective areas of retina in 2 to 3 sessions with 15 days interval. 10 to 60 years age group were studied. 90% of patients who got laser treatment are relieved from their headache in severity and in frequency. 80% of patients needed 2 sittings and 20% of patients needed 3 sittings. 70% of patients got relief from headache by fi rst sitting itself. 50% of patients are not only relieved from their headaches but also noticed visual clarity improvement. Retinal ischaemia is one of the main cause for ocular pain and headache. Laser treatment will improve circulation by reducing ischae mia thereby relieves ocular pain and headache

  11. The GREGOR Broad-Band Imager

    Science.gov (United States)

    von der Lühe, O.; Volkmer, R.; Kentischer, T. J.; Geißler, R.

    2012-11-01

    The design and characteristics of the Broad-Band Imager (BBI) of GREGOR are described. BBI covers the visible spectral range with two cameras simultaneously for a large field and with critical sampling at 390 nm, and it includes a mode for observing the pupil in a Foucault configuration. Samples of first-light observations are shown.

  12. Broad resonances and beta-decay

    DEFF Research Database (Denmark)

    Riisager, K.; Fynbo, H. O. U.; Hyldegaard, S.;

    2015-01-01

    Beta-decay into broad resonances gives a distorted lineshape in the observed energy spectrum. Part of the distortion arises from the phase space factor, but we show that the beta-decay matrix element may also contribute. Based on a schematic model for p-wave continuum neutron states it is argued...

  13. Study of the Radiation Hardness Performance of PiN diodes for the ATLAS Pixel Detector at the SLHC upgrade

    CERN Document Server

    Abi, B

    2009-01-01

    We study the radiation tolerance of the silicon and GaAs PiN diodes that will be the part of the readout system of the upgraded ATLAS pixel detector. The components were irradiated by 200 MeV protons up to total accumulated dose 1.2×1015 p/cm2 and by 24 GeV protons up to 2.6×1015 p/cm2. Based on obtained results, we conclude that radiation hardness does not depend on the sensitive area or cut off frequency of PiN diodes. We identify two diodes that can be used for the SLHC upgrade.

  14. Fiber-distributed multi-channel open-path H2S sensor based on tunable diode laser absorption spectroscopy

    Institute of Scientific and Technical Information of China (English)

    Dong Chen; Wenqing Liu; Yujun Zhang; Jianguo Liu; Ruifeng Kan; Min Wang; Xi Fang; Yiben Cui

    2007-01-01

    Tunable diode laser based gas detectors are now being used in a wide variety of applications for safety and environmental interest. A fiber-distributed multi-channel open-path H2S sensor based on tunable diode laser absorption spectroscopy (TDLAS) is developed, the laser used is a telecommunication near infrared distributed feed-back (DFB) tunable diode laser, combining with wavelength modulation specby combining optical fiber technique. An on-board reference cell provides on-line sensor calibration and almost maintenance-free operation. The sensor is suitable for large area field H2S monitoring application.

  15. Plasma-filled diode experiments on PBFA-II

    International Nuclear Information System (INIS)

    The PBFA-II accelerator is designed to use a Plasma Opening Switch (POS) for pulse shaping and voltage multiplication using inductive storage. The vacuum section of the machine consists of a set of short magnetically insulated transmission lines (MITLs) that both act as a voltage adder for series stacking of the pulses out of the 72 parallel plate water lines, and as a 100 nH (total) storage inductor upstream of a biconically shaped POS region. There are two POS plasma injection areas, located above and below an equatorial load, which has consisted of either a short circuit, a blade (electron beam) diode, or an Applied B magnetically insulated ion diode. The POS is designed to conduct up to 6 MA, and open into a 5 ohm diode load in 10 ns or less. Under these conditions, the voltage at the load is predicted to exceed 24 MV. Initial POS experiments using these loads have produced 1) opening times of typically 20 ns or longer, 2) poor current transfer efficiency (less than 50%) when load impedances averaged 2 ohms or more, and 3) differential switch opening in azimuthal segments of the power feed, thought to be caused by poor plasma uniformity across the flashboard plasma source. One possible explanation for 2) is that efficient transfer out of the POS requires that the current carried to the load be magnetically insulated, or else considerable energy will be deposited in the feed region between the POS and load. This had indeed been observed. The problem is further exacerbated by the longer current turn-on times that occur when an ion diode is used as the load

  16. Full-quantum light diode

    CERN Document Server

    Ghobadi, Roohollah

    2015-01-01

    Unidirectional light transport in one-dimensional nanomaterials at the quantum level is a crucial goal to achieve for upcoming computational devices. We here employ a full-quantum mechanical approach based on master equation to describe unidirectional light transport through a pair of two-level systems coupled to a one-dimensional waveguide. By comparing with published semi-classical results, we find that the nonlinearity of the system is reduced, thereby reducing also the unidirectional light transport efficiency. Albeit not fully efficient, we find that the considered quantum system can work as a light diode with an efficiency of approximately 60%. Our results may be used in quantum computation with classical and quantized light.

  17. Diamond based light-emitting diode for visible single-photon emission at room temperature

    Science.gov (United States)

    Lohrmann, A.; Pezzagna, S.; Dobrinets, I.; Spinicelli, P.; Jacques, V.; Roch, J.-F.; Meijer, J.; Zaitsev, A. M.

    2011-12-01

    Diamond-based p-i-n light-emitting diodes capable of single-photon emission in the visible spectral region at room temperature are discussed. The diodes were fabricated on a high quality single crystal diamond grown by chemical vapor deposition. Implantation of boron and phosphorus ions followed by annealing at a temperature of 1600 °C has been used for doping p-type and n-type areas, respectively. Electrical characterization of the devices demonstrates clear diode behavior. Spectra of electroluminescence generated in the i-area reveal sole emission from the neutral nitrogen-vacancy (NV) defects. Photon antibunching implies single-photon character of this emission when generated by individual NV defects.

  18. Bilayer avalanche spin-diode logic

    International Nuclear Information System (INIS)

    A novel spintronic computing paradigm is proposed and analyzed in which InSb p-n bilayer avalanche spin-diodes are cascaded to efficiently perform complex logic operations. This spin-diode logic family uses control wires to generate magnetic fields that modulate the resistance of the spin-diodes, and currents through these devices control the resistance of cascaded devices. Electromagnetic simulations are performed to demonstrate the cascading mechanism, and guidelines are provided for the development of this innovative computing technology. This cascading scheme permits compact logic circuits with switching speeds determined by electromagnetic wave propagation rather than electron motion, enabling high-performance spintronic computing

  19. Semiconductor laser diodes and the design of a D.C. powered laser diode drive unit

    OpenAIRE

    Cappuccio, Joseph C., Jr.

    1988-01-01

    Approved for public release; distribution is unlimited This thesis addresses the design, development and operational analysis of a D.C. powered semiconductor laser diode drive unit. A laser diode requires an extremely stable power supply since a picosecond spike of current or power supply switching transient could result in permanent damage. The design offers stability and various features for operational protection of the laser diode. The ability to intensity modulate (analog) and pulse m...

  20. Dosimetric evaluation using the diode measurements for total skin electron therapy technique

    Institute of Scientific and Technical Information of China (English)

    Ehab M.Attalla; Nashaat A.Deiab; Walaa S.Abd Elgawad

    2014-01-01

    The purpose of this study was to present the dosimetric study and evaluation the dose delivered to the skin tumor by using diode detector with total skin electron therapy (TSET).Methods: The total skin electron irradiation (TSEI) technique was used to treat ten patients with histological confirmed mycosis fungoides according to the Stanford staging system at the Radiotherapy Department, National Cancer Institute, Cairo University, Egypt. High dose rate electron beams with low electron energy 5 MeV from a Siemens linear accelerator were used for treatment. Diodes were calibrated at TSET distance 300 cm and field size (35 x 35) cm2.Results:The result of diodes measurements showed the dose to flat surface of the body was within ±10 % from the prescribed dose. Special areas of the body such as the perineum & eyelid showed large deviation up to 30% variation from the prescription dose.Conclusion:The diode results of this study wil be used as a quality assurance check for al new patients treated with TSET and to compare it to the prescribed dose delivered to the patients. It is recommends to evaluate the diodes measurements for al patients throughout the ful treatment cycle and to identify individu-aly the boost dose areas.

  1. Temperature change during non-contact diode laser irradiation of implant surfaces.

    Science.gov (United States)

    Geminiani, Alessandro; Caton, Jack G; Romanos, Georgios E

    2012-03-01

    A temperature increase of more than 10°C can compromise bone vitality. Laser radiation with different wavelengths has been used for the treatment of peri-implantitis, but little is known about the effect of laser irradiation on temperature rise on the implant surface. In this study, the temperature gradient (∆T) generated by laser irradiation of implant surface using two diode lasers (810 nm and a 980 nm) with 2 W of power has been recorded by two thermocouples (one in the cervical area and one in the apical area) and studied. The 810-nm diode laser showed the following results: after 60 s of irradiation with 2 W of continuous mode the temperature gradient in the cervical area of the implant (∆Tc) was 37.2°C, while in the apical area (∆Ta) was 27.2°C. The 980-nm diode laser showed the following results: after 60 s of irradiation with 2 W continuous mode ∆Tc was 41.1°C, and ∆Ta was 30.6°C. The 810-nm diode laser with 2 W continuous mode generated a temperature increase of 10°C after only 14 s. The 980-nm diode lasers groups produced a much more rapid temperature increase. In only 12 s, the continuous wave of 980 nm reached the 10°C temperature rise. From the present in vitro study it was concluded that the irradiation of implant surfaces with diode lasers may produce a temperature increase above the critical threshold (10°C ) after only 10 s.

  2. Performance of the cold powered diodes and diode leads in the main magnets of the LHC

    Science.gov (United States)

    Willering, G. P.; Giloux, C.; Bajko, M.; Bednarek, M.; Bottura, L.; Charifoulline, Z.; Dahlerup-Petersen, K.; Dib, G.; D'Angelo, G.; Gharib, A.; Grand-Clement, L.; Izquierdo Bermudez, S.; Prin, H.; Roger, V.; Rowan, S.; Savary, F.; Tock, J.-Ph; Verweij, A.

    2015-12-01

    During quench tests in 2011 variations in resistance of an order of magnitude were found in the diode by-pass circuit of the main LHC magnets. An investigation campaign was started to understand the source, the occurrence and the impact of the high resistances. Many tests were performed offline in the SM18 test facility with a focus on the contact resistance of the diode to heat sink contact and the diode wafer temperature. In 2014 the performance of the diodes and diode leads of the main dipole bypass systems in the LHC was assessed during a high current qualification test. In the test a current cycle similar to a magnet circuit discharge from 11 kA with a time constant of 100 s was performed. Resistances of up to 600 μΩ have been found in the diode leads at intermediate current, but in general the high resistances decrease at higher current levels and no sign of overheating of diodes has been seen and the bypass circuit passed the test. In this report the performance of the diodes and in particular the contact resistances in the diode leads are analysed with available data acquired over more than 10 years from acceptance test until the main dipole training campaign in the LHC in 2015.

  3. Broad iron lines in Active Galactic Nuclei

    CERN Document Server

    Fabian, A C; Reynolds, C S; Young, A J

    2000-01-01

    An intrinsically narrow line emitted by an accretion disk around a black hole appears broadened and skewed as a result of the Doppler effect and gravitational redshift. The fluorescent iron line in the X-ray band at 6.4-6.9keV is the strongest such line and is seen in the X-ray spectrum of many active galactic nuclei and, in particular, Seyfert galaxies. It is an important diagnostic with which to study the geometry and other properties of the accretion flow very close to the central black hole. The broad iron line indicates the presence of a standard thin accretion disk in those objects, often seen at low inclination. The broad iron line has opened up strong gravitational effects around black holes to observational study with wide-reaching consequences for both astrophysics and physics.

  4. Broad line regions in Seyfert-1 galaxies

    International Nuclear Information System (INIS)

    To reproduce observed emission profiles of Seyfert galaxies, rotation in an accretion disk has been proposed. In this thesis, the profiles emitted by such an accretion disk are investigated. Detailed comparison with the observed profiles yields that a considerable fraction can be fitted with a power-law function, as predicted by the model. The author analyzes a series of high quality spectra of Seyfert galaxies, obtained with the 2.5m telescope at Las Campanas. He presents detailed analyses of two objects: Mkn335 and Akn120. In both cases, strong evidence is presented for the presence of two separate broad line zones. These zones are identified with an accretion disk and an outflowing wind. The disk contains gas with very high densities and emits predominantly the lower ionization lines. He reports on the discovery of very broad wings beneath the strong forbidden line 5007. (Auth.)

  5. Fourier evaluation of broad Moessbauer spectra

    International Nuclear Information System (INIS)

    It is shown by the Fourier analysis of broad Moessbauer spectra that the even part of the distribution of the dominant hyperfine interaction (hyperfine field or quadrupole splitting) can be obtained directly without using least-square fitting procedures. Also the odd part of this distribution correlated with other hyperfine parameters (e.g. isomer shift) can be directly determined. Examples for amorphous magnetic and paramagnetic iron-based alloys are presented. (author)

  6. Crx broadly modulates the pineal transcriptome

    OpenAIRE

    Rovsing, Louise; Clokie, Samuel; Bustos, Diego M.; Rohde, Kristian; Steven L Coon; Litman, Thomas; Rath, Martin F.; Møller, Morten; Klein, David C.

    2011-01-01

    Cone-rod homeobox (Crx) encodes Crx, a transcription factor expressed selectively in retinal photoreceptors and pinealocytes, the major cell type of the pineal gland. Here, the influence of Crx on the mammalian pineal gland was studied by light and electron microscopy and by use of microarray and qRTPCR technology, thereby extending previous studies on selected genes (Furukawa et al. 1999). Deletion of Crx was not found to alter pineal morphology, but was found to broadly modulate the mouse p...

  7. A Broad View of Macroeconomic Stability

    OpenAIRE

    José Antonio Ocampo

    2005-01-01

    This paper recommends a broad concept of macroeconomic stability, whereby “sound macroeconomic frameworks” include not only price stability and sound fiscal policies, but also a well-functioning real economy, sustainable debt ratios and healthy public and private sector balance sheets. These multiple dimensions imply using multiple policy instruments. The paper elaborates a framework for developing countries that involves active use of counter-cyclical macroeconomic policies (exchange rate, m...

  8. Near infrared polymer light-emitting diodes

    Institute of Scientific and Technical Information of China (English)

    ZHANG Yong; YANG Jian; HOU Qiong; MO Yueqi; PENG Junbiao; CAO Yong

    2005-01-01

    High efficiency of near infrared polymer light-emitting diodes with bilayer structure was obtained. The diode structure is ITO/PEDOT/L1/L2/Ba/Al, where L1 is phenyl-substituted poly [p-phenylphenylene vinylene] derivative (P-PPV), L2 is 9,9-dioctylfluorene (DOF) and 4,7- bis(3-hexylthiophen)-2-yl-2,1,3-naphthothiadiazole (HDNT) copolymer (PFHDNT10). The electroluminescence (EL) spectrum of diodes from PFHDNT10 is at 750 nm located in the range of near infrared. The maximum external quantum efficiency is up to 2.1% at the current density of 35 mA/cm2. The improvement of the diode's performances was considered to be the irradiative excitons confined in the interface between L1 and L2 layers.

  9. High Power Diode Lasers Technology and Applications

    CERN Document Server

    Bachmann, Friedrich; Poprawe, Reinhart

    2007-01-01

    In a very comprehensive way this book covers all aspects of high power diode laser technology for materials processing. Basics as well as new application oriented results obtained in a government funded national German research project are described in detail. Along the technological chain after a short introduction in the second chapter diode laser bar technology is discussed regarding structure, manufacturing technology and metrology. The third chapter illuminates all aspects of mounting and cooling, whereas chapter four gives wide spanning details on beam forming, beam guiding and beam combination, which are essential topics for incoherently coupled multi-emitter based high power diode lasers. Metrology, standards and safety aspects are the theme of chapter five. As an outcome of all the knowledge from chapter two to four various system configurations of high power diode lasers are described in chapter six; not only systems focussed on best available beam quality but especially also so called "modular" set...

  10. Blood sugar monitoring with laser diode

    Science.gov (United States)

    Zhang, Xiqin; Chen, Jianhong; Yeo, Joon Hock

    2006-09-01

    In this paper, the non-invasive measurement of blood sugar level was studied by use of near infrared laser diode. The in-vivo experiments were carried out using laser diodes with wavelength 1625nm and 1650nm. Several volunteers were tested before and after drinking glucose solution. We took blood from a fingertip and measured its concentration with a glucose meter while taking signal voltage from laser diode system. The signal voltage was processed by using a computer and blood absorption was obtained. The results show that blood sugar level and blood absorption have similar trends before and after drinking glucose solution. We also compared the trends of drinking glucose solution and pure water and the results show that the difference of blood absorption is obvious. From the results we can see that laser diode is suitable for blood glucose monitoring.

  11. I-V characteristics of foilless diodes

    Institute of Scientific and Technical Information of China (English)

    Liu Guo-Zhi; Huang Wen-Hua; Yang Zhan-Feng

    2005-01-01

    Some physical characteristics of foilless diodes are obtained and analysed by numerical simulations. Relations between diode current andconfiguration parameters, i.e. diode voltage and external magnetic field, are investigated.Employing these relations and assuming that the external magnetic field is strong enough, the diode current can be approximately written as Ib=(7.5/x)(x+(0.81-x)/(1+0.7Ld2/δr))(γ0 2/3-1)3/2, in which Ld is the Anode-Cathode(AK) gap, Rc the outer radius of cathode, and Rp the radius of drifting tube; x=ln(Rp/Rc), δr=Rp- Rc. This expression is comparatively accurate for different configuration parameters and voltages; results obtained from this expression are consistent with that of numerical simulations within an error of 10%.

  12. Proto-I switching and diode studies

    International Nuclear Information System (INIS)

    Proto-I is a 3 MV, 800 kA, 24 ns electron beam accelerator that is under development at Sandia Laboratories. It represents an initial effort to develop a scalable technology that is applicable to accelerators for electron beam driven, inertial confinement fusion studies. Energy is supplied to each of the two diodes from six oil-dielectric Blumlein transmission lines (PFL) operating in parallel. A Marx generator charges three intermediate storage, water-dielectric capacitors which subsequently transfer the stored energy to the PFL. The discharge of the PFL is initiated by the simultaneous closure of 12 triggered oil-dielectric rail switches. Data will be presented on the operation of these multichannel switches. The two diodes have a common anode. Cathode diameters can be varied from 10 to 60 cm. Results of initial diode experiments and comparisons with theory are discussed. Plasma filled diode experiments are also reported, indicating pinch collapse velocities in excess of 109 cm/s

  13. Proto-I switching and diode studies

    International Nuclear Information System (INIS)

    Proto-I is a 3 MV, 800 kA, 24 ns electron beam accelerator that is under development as an initial effort to develop a scalable technology that is applicable to accelerators for electron beam driven, inertial confinement fusion studies. Energy is supplied to each of the two diodes from six oil-dielectric Blumlein transmission lines (PFL) operating in parallel. A Marx generator charges three intermediate storage, water-dielectric capacitors which subsequently transfer the stored energy to the PFL. The discharge of the PFL is initiated by the simultaneous closure of 12 triggered oil-dielectric rail switches. Data are presented on the operation of these multichannel switches. The two diodes have a common anode. Cathode diameters can be varied from 10 to 60 cm. Results of initial diode experiments and comparisons with theory are discussed. Plasma filled diode experiments are also reported, indicating pinch collapse velocities in excess of 109 cm/s

  14. Relativistic redshifts in quasar broad lines

    CERN Document Server

    Tremaine, Scott; Liu, Xin; Loeb, Abraham

    2014-01-01

    The broad emission lines commonly seen in quasar spectra have velocity widths of a few per cent of the speed of light, so special- and general-relativistic effects have a significant influence on the line profile. We have determined the redshift of the broad H-beta line in the quasar rest frame (determined from the core component of the [OIII] line) for over 20,000 quasars from the Sloan Digital Sky Survey DR7 quasar catalog. The mean redshift as a function of line width is approximately consistent with the relativistic redshift that is expected if the line originates in a randomly oriented Keplerian disk that is obscured when the inclination of the disk to the line of sight exceeds ~30-45 degrees, consistent with simple AGN unification schemes. This result also implies that the net line-of-sight inflow/outflow velocities in the broad-line region are much less than the Keplerian velocity when averaged over a large sample of quasars with a given line width.

  15. Synthesis and optical properties of cadmium selenide quantum dots for white light-emitting diode application

    International Nuclear Information System (INIS)

    Highlights: ► Stable CdSe QDs were synthesized by the one-step and two-level process respectively. ► The fabricated white LEDs show good white balance. ► CdSe QDs present well green to yellow band luminescence. ► CdSe QDs displayed a broad excitation band. - Abstract: Yellow light-emitting cadmium selenide quantum dots were synthesized using one-step and two-step methods in an aqueous medium. The structural luminescent properties of these quantum dots were investigated. The obtained cadmium selenide quantum dots displayed a broad excitation band suitable for blue or near-ultraviolet light-emitting diode applications. White light-emitting diodes were fabricated by coating the cadmium selenide samples onto a 460 nm-emitting indium gallium nitrite chip. Both samples exhibited good white balance. Under a 20 mA working current, the white light-emitting diode fabricated via the one-step and two-step methods showed Commission Internationale de l’Éclairage coordinates at (0.27, 0.23) and (0.27, 0.33), respectively, and a color rendering index equal to 41 and 37, respectively. The one-step approach was simpler, greener, and more effective than the two-step approach. The one-step approach can be enhanced by combining cadmium selenide quantum dots with proper phosphors

  16. Organic Schottky diode: Characterization of traps

    Science.gov (United States)

    Rani, Varsha; Yadav, Sarita; Ghosh, Subhasis

    2015-06-01

    We have demonstrated the formation and characterization of Schottky junction in metal/organic/metal sandwiched devices based on organic molecular semiconductors, using current-voltage (J-V) and capacitance-voltage (C-V) characteristics, in particular how traps affect the device performance. Ideality factor of organic Schottky diode is always greater than unity and increases with decreasing the temperature. Diffusion coefficient has been determined from current density -voltage characteristic in Schottky diodes.

  17. Dynamics of resonant tunneling diode optoelectronic oscillators

    OpenAIRE

    Romeira, Bruno

    2012-01-01

    The nonlinear dynamics of optoelectronic integrated circuit (OEIC) oscillators comprising semiconductor resonant tunneling diode (RTD) nanoelectronic quantum devices has been investigated. The RTD devices used in this study oscillate in the microwave band frequency due to the negative di erential conductance (NDC) of their nonlinear current voltage characteristics, which is preserved in the optoelectronic circuit. The aim was to study RTD circuits incorporating laser diodes and...

  18. Interferometry and Holography With Diode Laser Light

    CERN Document Server

    Lunazzi, Jose Joaquin

    2016-01-01

    We made an interferometric Michelson type setup and a simple holographic setup to demonstrate the feasibility of interferometric and holographic techniques by means of a diode laser. The laser was made by using a common diode available as a penlight element (less than R$ 15,00 value) and a simple stabilized 110 VCA- 3 VCC power supply. Interference fringes and holograms of small objects where obtained very similar to those of a helium-neon laser based setup.

  19. Phase Noise Reduction of Laser Diode

    Science.gov (United States)

    Zhang, T. C.; Poizat, J.-Ph.; Grelu, P.; Roch, J.-F.; Grangier, P.; Marin, F.; Bramati, A.; Jost, V.; Levenson, M. D.; Giacobino, E.

    1996-01-01

    Phase noise of single mode laser diodes, either free-running or using line narrowing technique at room temperature, namely injection-locking, has been investigated. It is shown that free-running diodes exhibit very large excess phase noise, typically more than 80 dB above shot-noise at 10 MHz, which can be significantly reduced by the above-mentioned technique.

  20. Bypass diode for a solar cell

    Science.gov (United States)

    Rim, Seung Bum; Kim, Taeseok; Smith, David D.; Cousins, Peter J.

    2012-03-13

    Bypass diodes for solar cells are described. In one embodiment, a bypass diode for a solar cell includes a substrate of the solar cell. A first conductive region is disposed above the substrate, the first conductive region of a first conductivity type. A second conductive region is disposed on the first conductive region, the second conductive region of a second conductivity type opposite the first conductivity type.

  1. Light-emitting diodes - Their potential in biomedical applications

    Energy Technology Data Exchange (ETDEWEB)

    Yeh, Naichia Gary; Wu, Chia-Hao [College of Applied Sciences, MingDao University, 369 Wen-Hua Road, Peetou, Changhua 52345 (China); Cheng, Ta Chih [Department of Tropical Agriculture and International Cooperation, National Pingtung University of Science and Technology, 1 Hseuh-Fu Rd., Nei-Pu Hsiang, Pingtung 91201 (China)

    2010-10-15

    The rapid development of high brightness light-emitting diodes (LEDs) makes feasible the use of LEDs, among other light sources (such as laser, intense pulse light and other incoherent light systems), for medical treatment and light therapy. This paper provides a general review on red, green, blue, ultraviolet LED applications in photo rejuvenation and medical treatments of a variety of physical abnormalities, as well as the relief of stress, circadian rhythm disorders, and seasonal affective disorder. The review, concentrated in the papers published after 1990, intends to show that LEDs are well qualified to succeed its more energy demanding counterparts in the named areas and beyond. (author)

  2. High Current Density 2D/3D Esaki Tunnel Diodes

    OpenAIRE

    Krishnamoorthy, Sriram; Lee II, Edwin W.; Lee, Choong Hee; Zhang, Yuewei; McCulloch, William D.; Johnson, Jared M.; Hwang, Jinwoo; Wu, Yiying; Rajan, Siddharth

    2016-01-01

    The integration of two-dimensional materials such as transition metal dichalcogenides with bulk semiconductors offer interesting opportunities for 2D/3D heterojunction-based novel device structures without any constraints of lattice matching. By exploiting the favorable band alignment at the GaN/MoS2 heterojunction, an Esaki interband tunnel diode is demonstrated by transferring large area, Nb-doped, p-type MoS2 onto heavily n-doped GaN. A peak current density of 446 A/cm2 with repeatable roo...

  3. To Broad-Match or Not to Broad-Match : An Auctioneer's Dilemma ?

    CERN Document Server

    Singh, Sudhir Kumar

    2008-01-01

    We initiate the study of an interesting aspect of sponsored search advertising, namely the consequences of broad match-a feature where an ad of an advertiser can be mapped to a broader range of relevant queries, and not necessarily to the particular keyword(s) that ad is associated with. Starting with a very natural setting for strategies available to the advertisers, and via a careful look through algorithmic and complexity theoretic glasses, we first propose a solution concept called broad match equilibrium(BME) for the game originating from the strategic behavior of advertisers as they try to optimize their budget allocation across various keywords. Next, we consider two broad match scenarios based on factors such as information asymmetry between advertisers and the auctioneer, and the extent of auctioneer's control on the budget splitting. In the first scenario, the advertisers have the full information about broad match and relevant parameters, and can reapportion their own budgets to utilize the extra i...

  4. Operation and maintenance manual for diode performance analysis program DIODE0

    International Nuclear Information System (INIS)

    This program computes diode performance parameters for the e beam fusion accelerators HYDRA, PROTO I and PROTO II. The program works in conjunction with other programs in the data acquisition facility library. It reads the input data produced by the Tekronix R7012 Transient Digitizers off the disc. It then computes and plots the diode corrected voltages, impedances, powers, and energies

  5. Performance of the cold powered diodes and diode leads in the main magnets of the LHC

    CERN Document Server

    Willering, G P; Bajko, M; Bednarek, M; Bottura, L; Charifoulline, Z; Dahlerup-Petersen, K; Dib, G; D'Angelo, G; Gharib, A; Grand-Clement, L; Izquierdo Bermudez, S; Prin, H; Roger, V; Rowan, S; Savary, F; Tock, J-Ph; Verweij, A

    2015-01-01

    During quench tests in 2011 variations in resistance of an order of magnitude were found in the diode by-pass circuit of the main LHC magnets. An investigation campaign was started to understand the source, the occurrence and the impact of the high resistances. Many tests were performed offline in the SM18 test facility with a focus on the contact resistance of the diode to heat sink contact and the diode wafer temperature. In 2014 the performance of the diodes and diode leads of the main dipole bypass systems in the LHC was assessed during a high current qualification test. In the test a current cycle similar to a magnet circuit discharge from 11 kA with a time constant of 100 s was performed. Resistances of up to 600 μΩ have been found in the diode leads at intermediate current, but in general the high resistances decrease at higher current levels and no sign of overheating of diodes has been seen and the bypass circuit passed the test. In this report the performance of the diodes and in particular the co...

  6. A p-i-n junction diode based on locally doped carbon nanotube network

    OpenAIRE

    Xiaodong Liu; Changxin Chen; Liangming Wei; Nantao Hu; Chuanjuan Song; Chenghao Liao; Rong He; Xusheng Dong; Ying Wang; Qinran Liu; Yafei Zhang

    2016-01-01

    A p-i-n junction diode constructed by the locally doped network of single-walled carbon nanotubes (SWNTs) was investigated. In this diode, the two opposite ends of the SWNT-network channel were selectively doped by triethyloxonium hexachloroantimonate (OA) and polyethylenimine (PEI) to obtain the air-stable p- and n-type SWNTs respectively while the central area of the SWNT-network remained intrinsic state, resulting in the formation of a p-i-n junction with a strong built-in electronic field...

  7. Microwave emission from pulsed, relativistic e-beam diodes. I. The smooth-bore magnetron

    International Nuclear Information System (INIS)

    Measurements of intense magnetron oscillations in pulsed, field-emission diodes (approx.350 kV, 30 nsec) subjected to crossed externally applied fields (< or approx. =16 kG) are reported. The oscillations set in as soon as the magnetic field exceeds the critical field necessary for cutting off the diode current. The oscilations are diagnosed by the microwave emission which is studied in the range from 7 to 40 GHz. The radiation is emitted in broad frequency bands, it is strongly polarized, and can be tuned by the magnetic field; the power levels are typically 1 to 5 kW. The observations are consistent with the onset of the slipping stream instability in the Brillouin space charge flow of the electron cloud

  8. Diode-based microbolometer with performance enhanced by broadband metamaterial absorber.

    Science.gov (United States)

    Ma, Wei; Jia, Delin; Wen, Yongzheng; Yu, Xiaomei; Feng, Yun; Zhao, Yuejin

    2016-07-01

    This Letter reports a microbolometer integrated with a broadband metamaterial absorber (MMA) to enhance its performance, which contains series-connected silicon diodes as the temperature sensor. The broadband MMA is readily integrated into the device by introducing an array of different-sized square resonators on the silicon nitride structural layer, while the widened titanium interconnecting wires between individual diodes serve as the ground plane. In a comparative experiment, the broadband MMA was demonstrated to be superior to the ordinary silicon nitride absorber in a broad spectra range, especially in a long-wavelength IR regime, which directly leads to an increase in IR responsivity by 60%. More importantly, this enhancement in responsivity was achieved with no sacrifice of the response time due to the negligible thermal mass of the introduced resonator array. PMID:27367079

  9. Generation of single-frequency tunable green light in a coupled ring tapered diode laser cavity

    DEFF Research Database (Denmark)

    Jensen, Ole Bjarlin; Petersen, Paul Michael

    2013-01-01

    in the broad wavelength range from 1049 nm to 1093 nm and the beam propagation factor is improved from M2 = 2.8 to below 1.1. The laser frequency is automatically locked to the cavity resonance frequency using optical feedback. Furthermore, we show that this adaptive external cavity approach leads to efficient......We report the realization of a tapered diode laser operated in a coupled ring cavity that significantly improves the coherence properties of the tapered laser and efficiently generates tunable light at the second harmonic frequency. The tapered diode laser is tunable with single-frequency output...... frequency doubling. More than 500 mW green output power is obtained by placing a periodically poled LiNbO3 crystal in the external cavity. The single frequency green output from the laser system is tunable in the 530 nm to 533 nm range limited by the LiNbO3 crystal. The optical to optical conversion...

  10. Nitride superluminescent diodes with broadened emission spectrum fabricated using laterally patterned substrate.

    Science.gov (United States)

    Kafar, A; Stanczyk, S; Sarzynski, M; Grzanka, S; Goss, J; Targowski, G; Nowakowska-Siwinska, A; Suski, T; Perlin, P

    2016-05-01

    We demonstrate InGaN/GaN superluminescent diodes with broadened emission spectra fabricated on surface-shaped bulk GaN (0001) substrates. The patterning changes the local vicinal angle linearly along the device waveguide, which results in an indium incorporation profile in InGaN quantum wells. The structure was investigated by microphotoluminescence mapping, showing a shift of central emission wavelength from 413 nm to 430 nm. Spectral full width at half maximum of processed superluminescent diodes is equal to 6.1 nm, while the reference chips show 3.4 nm. This approach may open the path for using nitride devices in applications requiring broad emission spectrum and high beam quality, such as optical coherence tomography.

  11. Active differential optical absorption spectroscopy for NO2 gas pollution using blue light emitting diodes

    Science.gov (United States)

    Aljalal, Abdulaziz; Gasmi, Khaled; Al-Basheer, Watheq

    2015-05-01

    Availability of high intensity light emitting diodes in the blue region offer excellent opportunity for using them in active Differential Optical Absorption Spectroscopy (DOAS) to detect air pollution. Their smooth and relatively broad spectral emissions as well as their long life make them almost ideal light sources for active DOAS. In this study, we report the usage of a blue light emitting diode in an active DOAS setup to measure traces of NO2 gas and achieving few parts per billion detection limit for a path length of 300 m. Details of the setup will be presented along with the effects on measurement accuracy due to shifts in the measured spectra calibration and due to using theoretical instrument Gaussian function instead of the measured instrument function.

  12. Broad spectrum antibiotic compounds and use thereof

    Energy Technology Data Exchange (ETDEWEB)

    Koglin, Alexander; Strieker, Matthias

    2016-07-05

    The discovery of a non-ribosomal peptide synthetase (NRPS) gene cluster in the genome of Clostridium thermocellum that produces a secondary metabolite that is assembled outside of the host membrane is described. Also described is the identification of homologous NRPS gene clusters from several additional microorganisms. The secondary metabolites produced by the NRPS gene clusters exhibit broad spectrum antibiotic activity. Thus, antibiotic compounds produced by the NRPS gene clusters, and analogs thereof, their use for inhibiting bacterial growth, and methods of making the antibiotic compounds are described.

  13. SiC-Based Schottky Diode Gas Sensors

    Science.gov (United States)

    Hunter, Gary W.; Neudeck, Philip G.; Chen, Liang-Yu; Knight, Dak; Liu, Chung-Chiun; Wu, Quing-Hai

    1997-01-01

    Silicon carbide based Schottky diode gas sensors are being developed for high temperature applications such as emission measurements. Two different types of gas sensitive diodes will be discussed in this paper. By varying the structure of the diode, one can affect the diode stability as well as the diode sensitivity to various gases. It is concluded that the ability of SiC to operate as a high temperature semiconductor significantly enhances the versatility of the Schottky diode gas sensing structure and will potentially allow the fabrication of a SiC-based gas sensor arrays for versatile high temperature gas sensing applications.

  14. Computational study of magnetic-dam effects in a high-impedance diode

    International Nuclear Information System (INIS)

    Computer simulations have been conducted to test the magnetic dam concept as a means for boosting the overall ion efficiency of high impedance diodes. The dam consists of a cell located immediately behind the anode foil containing a wire along its central axis which carries a current flowing in a direction opposite to that in the diode gap. The azimuthal magnetic field generated by the wire current, I/sub w/, reflects the electrons crossing the foil back into the A-K gap at higher radii where their space charge can enhance ion emission over relatively large areas. Significant increases in the ion current were observed for several values of I/sub w/ but a simultaneous increase in electron current prevented gains in overall ion efficiency. Instead, only decreased impedances were observed. The cause of this phenomenon is explained and indicates solutions which could benefit a wide range of future diode designs

  15. Schottky Barrier mapping of the W/Si diode using ballistic electron emission microscopy

    Science.gov (United States)

    Durcan, Christopher; Balsano, Robert; Pieniazek, Nicholas; Labella, Vincent

    2015-03-01

    The Schottky barrier of the W/Si(001) diode was investigated and spatially mapped at the nanoscale using ballistic electron emission microscopy (BEEM) and ballistic hole emission microscopy (BHEM). The miscibility of tungsten and silicon creates a thin silicide upon deposition with transmission electron microscopy (TEM) and Rutherford backscattering spectrometry (RBS) showing the changes in the silicide over several weeks. Using standard current voltage measurements there is no change in the charge transport across the diode during this time period. However, BEEM measurements do show dramatic changes to the transport of ballistic electrons over time with nanoscale resolution. Time dependent Schottky barrier maps are generated over a 1 μm x 1 μm area and provide valuable insight to the barrier height homogeneity, defect formation, and interfacial effects occurring in the diode.

  16. All-optical diode effect of a nonlinear photonic crystal with a defect

    Institute of Scientific and Technical Information of China (English)

    WANG Wei-jiang; ZHOU Jin-yun; XIAO Wan-neng

    2006-01-01

    An all-optical diode behavior that uses a nonlinear one-dimensional photonic crystal (NPC) with a defect Kerr medium is numerically simulated by the use of a nonlinear finite-difference time-domain (NFDTD) method.The numerical results show that for an incident pulse with appropriate intensity and temporal width,the transmittance can be several times greater in one direction of NPC than in the opposite direction at the pulse carrier frequency. This behaves like an all-optical diode and has promising applications in some areas such as optical isolation and all-optical processing.The ways to obtain low threshold of pulse field strength to realize an all-optical diode are also analyzed in detail.

  17. End-pumped 1.5 microm monoblock laser for broad temperature operation.

    Science.gov (United States)

    Schilling, Bradley W; Chinn, Stephen R; Hays, A D; Goldberg, Lew; Trussell, C Ward

    2006-09-01

    We describe a next-generation monoblock laser capable of a greater than 10 mJ, 1.5 microm output at 10 pulses/s (pps) over broad ambient temperature extremes with no active temperature control. The transmitter design is based on a Nd:YAG laser with a Cr4+ passive Q switch and intracavity potassium titanyl phosphate optical parametric oscillator. To achieve the repetition rate and efficiency goals of this effort, but still have wide temperature capability, the Nd:YAG slab is end pumped with a 12-bar stack of 100 W (each) diode bars. Different techniques for focusing the pump radiation into the 4.25 mmx4.25 mm end of the slab are compared, including a lensed design, a reflective concentrator, and a lens duct. A wide temperature operation (-20 degrees C to 50 degrees C) for each end-pumped configuration is demonstrated.

  18. The influence of interlayer exchange coupling in giant-magnetoresistive devices on spin diode effect in wide frequency range

    International Nuclear Information System (INIS)

    Spin diode effect in a giant magnetoresistive strip is measured in a broad frequency range, including resonance and off-resonance frequencies. The off-resonance dc signal is relatively strong and also significantly dependent on the exchange coupling between magnetic films through the spacer layer. The measured dc signal is described theoretically by taking into account magnetic dynamics induced by Oersted field created by an ac current flowing through the system

  19. Scalable Light Module for Low-Cost, High-Efficiency Light- Emitting Diode Luminaires

    Energy Technology Data Exchange (ETDEWEB)

    Tarsa, Eric [Cree, Inc., Goleta, CA (United States)

    2015-08-31

    During this two-year program Cree developed a scalable, modular optical architecture for low-cost, high-efficacy light emitting diode (LED) luminaires. Stated simply, the goal of this architecture was to efficiently and cost-effectively convey light from LEDs (point sources) to broad luminaire surfaces (area sources). By simultaneously developing warm-white LED components and low-cost, scalable optical elements, a high system optical efficiency resulted. To meet program goals, Cree evaluated novel approaches to improve LED component efficacy at high color quality while not sacrificing LED optical efficiency relative to conventional packages. Meanwhile, efficiently coupling light from LEDs into modular optical elements, followed by optimally distributing and extracting this light, were challenges that were addressed via novel optical design coupled with frequent experimental evaluations. Minimizing luminaire bill of materials and assembly costs were two guiding principles for all design work, in the effort to achieve luminaires with significantly lower normalized cost ($/klm) than existing LED fixtures. Chief project accomplishments included the achievement of >150 lm/W warm-white LEDs having primary optics compatible with low-cost modular optical elements. In addition, a prototype Light Module optical efficiency of over 90% was measured, demonstrating the potential of this scalable architecture for ultra-high-efficacy LED luminaires. Since the project ended, Cree has continued to evaluate optical element fabrication and assembly methods in an effort to rapidly transfer this scalable, cost-effective technology to Cree production development groups. The Light Module concept is likely to make a strong contribution to the development of new cost-effective, high-efficacy luminaries, thereby accelerating widespread adoption of energy-saving SSL in the U.S.

  20. High power laser diodes at 14xx nm wavelength range for industrial and medical applications

    Science.gov (United States)

    Telkkälä, Jarkko; Boucart, Julien; Krejci, Martin; Crum, Trevor; Lichtenstein, Norbert

    2014-03-01

    We report on the development of the latest generation of high power laser diodes at 14xx nm wavelength range suitable for industrial applications such as plastics welding and medical applications including acne treatment, skin rejuvenation and surgery. The paper presents the newest chip generation developed at II-VI Laser Enterprise, increasing the output power and the power conversion efficiency while retaining the reliability of the initial design. At an emission wavelength around 1440 nm we applied the improved design to a variety of assemblies exhibiting maximum power values as high as 7 W for broad-area single emitters. For 1 cm wide bars on conductive coolers and for bars on active micro channel coolers we have obtained 50 W and 72 W in continuous wave (cw) operation respectively. The maximum power measured for a 1 cm bar operated with 50 μs pulse width and 0.01% duty cycle was 184 W, demonstrating the potential of the chip design for optimized cooling. Power conversion efficiency values as high as 50% for a single emitter device and over 40% for mounted bars have been demonstrated, reducing the required power budget to operate the devices. Both active and conductive bar assembly configurations show polarization purity greater than 98%. Life testing has been conducted at 95 A, 50% duty cycle and 0.5 Hz hard pulsed operation for bars which were soldered to conductive copper CS mounts using our hard solder technology. The results after 5500 h, or 10 million "on-off" cycles show stable operation.

  1. Laser diode pumped solid state laser driver

    International Nuclear Information System (INIS)

    Technical and economical feasibility of a diode pumped solid state laser driver for the fusion reactor is presented. Nd-doped solid state laser materials of lasing wavelengths at 1 μm are selected. We discuss the total efficiency of the laser driver in detail and then show that a total efficiency of 12 % can be achieved in the diode pumped solid state laser driver. We design the diode pumped solid state laser drivers with five typical solid state materials using a conceptual design technique. Designing conditions are the output energy of 4MJ per pulse at the wavelength of 0.35 μm, total efficiency of 12 % and repetition rate of 12 Hz. From the results of design, it is concluded the some diode pumped solid state laser drivers have large potentiality from both technical and economical points of view. Based on the conclusion, the items to be investigated for the quicker realization of the diode pumped solid state laser driver are also presented. (author)

  2. Percutaneous diode laser disc nucleoplasty

    Science.gov (United States)

    Menchetti, P. P.; Longo, Leonardo

    2004-09-01

    The treatment of herniated disc disease (HNP) over the years involved different miniinvasive surgical options. The classical microsurgical approach has been substituted over the years both by endoscopic approach in which is possible to practice via endoscopy a laser thermo-discoplasty, both by percutaneous laser disc nucleoplasty. In the last ten years, the percutaneous laser disc nucleoplasty have been done worldwide in more than 40000 cases of HNP. Because water is the major component of the intervertebral disc, and in HNP pain is caused by the disc protrusion pressing against the nerve root, a 980 nm Diode laser introduced via a 22G needle under X-ray guidance and local anesthesia, vaporizes a small amount of nucleous polposus with a disc shrinkage and a relief of pressure on nerve root. Most patients get off the table pain free and are back to work in 5 to 7 days. Material and method: to date, 130 patients (155 cases) suffering for relevant symptoms therapy-resistant 6 months on average before consulting our department, have been treated. Eightyfour (72%) males and 46 (28%) females had a percutaneous laser disc nucleoplasty. The average age of patients operated was 48 years (22 - 69). The level of disc removal was L3/L4 in 12 cases, L4/L5 in 87 cases and L5/S1 in 56 cases. Two different levels were treated at the same time in 25 patients. Results: the success rate at a minimum follow-up of 6 months was 88% with a complication rate of 0.5%.

  3. Diode-pumped laser altimeter

    Science.gov (United States)

    Welford, D.; Isyanova, Y.

    1993-01-01

    TEM(sub 00)-mode output energies up to 22.5 mJ with 23 percent slope efficiencies were generated at 1.064 microns in a diode-laser pumped Nd:YAG laser using a transverse-pumping geometry. 1.32-micron performance was equally impressive at 10.2 mJ output energy with 15 percent slope efficiency. The same pumping geometry was successfully carried forward to several complex Q-switched laser resonator designs with no noticeable degradation of beam quality. Output beam profiles were consistently shown to have greater than 90 percent correlation with the ideal TEM(sub 00)-order Gaussian profile. A comparison study on pulse-reflection-mode (PRM), pulse-transmission-mode (PTM), and passive Q-switching techniques was undertaken. The PRM Q-switched laser generated 8.3 mJ pulses with durations as short as 10 ns. The PTM Q-switch laser generated 5 mJ pulses with durations as short as 5 ns. The passively Q-switched laser generated 5 mJ pulses with durations as short as 2.4 ns. Frequency doubling of both 1.064 microns and 1.32 microns with conversion efficiencies of 56 percent in lithium triborate and 10 percent in rubidium titanyl arsenate, respectively, was shown. Sum-frequency generation of the 1.064 microns and 1.32 microns radiations was demonstrated in KTP to generate 1.1 mJ of 0.589 micron output with 11.5 percent conversion efficiency.

  4. Low-leakage diode-triggered silicon controlled rectifier for electrostatic discharge protection in 0.18-μm CMOS process

    Institute of Scientific and Technical Information of China (English)

    Xiao-yang DU; Shu-rong DONG; Yan HAN; Ming-xu HUO; Da-hai HUANG

    2009-01-01

    A diode-triggered silicon controlled rectifier (DTSCR) is being developed as an electrostatic discharge (ESD) protection device for low voltage applications. However, DTSCR leaks high current during normal operation due to the Darlington effect of the triggering-assist diode string. In this study, two types of diode string triggered SCRs are designed for low leakage consideration; the modified diode string and composite polysilicon diode string triggered SCRs (MDTSCR & PDTSCR). Compared with the conventional DTSCR (CDTSCR), the MDTSCR has a much lower substrate leakage current with a relatively large silicon cost, and the PDTSCR has a much lower substrate leakage current with similar area and shows good leakage performance at a high temperature. Other DTSCR ESD properties are also investigated, especially regarding their layout, triggering voltage and failure current.

  5. Against a Broad Definition of "Empathy"

    Directory of Open Access Journals (Sweden)

    Sarah Songhorian

    2015-04-01

    Full Text Available In this paper I will try to provide some arguments against a broad definition of “empathy”. Firstly, I will deal with attempts to define empathy as an umbrella concept. Then, I will try to point out the four main elements which contribute to the confusion that researchers in both the social and political as well as the scientific and philosophical domains face when dealing with empathy. In order to resolve this confusion, I suggest applying David Marr’s distinction to the field of empathy. Instead of providing an umbrella definition for empathy, which tries to account for all the data coming from different disciplines, I believe understanding that there are different levels of explanations and that different disciplines can contribute to each of them will provide a more detailed and less confused definition of empathy.

  6. Broad-band acoustic hyperbolic metamaterial

    CERN Document Server

    Shen, Chen; Sui, Ni; Wang, Wenqi; Cummer, Steven A; Jing, Yun

    2015-01-01

    Acoustic metamaterials (AMMs) are engineered materials, made from subwavelength structures, that exhibit useful or unusual constitutive properties. There has been intense research interest in AMMs since its first realization in 2000 by Liu et al. A number of functionalities and applications have been proposed and achieved using AMMs. Hyperbolic metamaterials are one of the most important types of metamaterials due to their extreme anisotropy and numerous possible applications, including negative refraction, backward waves, spatial filtering, and subwavelength imaging. Although the importance of acoustic hyperbolic metamaterials (AHMMs) as a tool for achieving full control of acoustic waves is substantial, the realization of a broad-band and truly hyperbolic AMM has not been reported so far. Here, we demonstrate the design and experimental characterization of a broadband AHMM that operates between 1.0 kHz and 2.5 kHz.

  7. A broad view of model validation

    International Nuclear Information System (INIS)

    The safety assessment of a nuclear waste repository requires the use of models. Such models need to be validated to ensure, as much as possible, that they are a good representation of the actual processes occurring in the real system. In this paper we attempt to take a broad view by reviewing step by step the modeling process and bringing out the need to validating every step of this process. This model validation includes not only comparison of modeling results with data from selected experiments, but also evaluation of procedures for the construction of conceptual models and calculational models as well as methodologies for studying data and parameter correlation. The need for advancing basic scientific knowledge in related fields, for multiple assessment groups, and for presenting our modeling efforts in open literature to public scrutiny is also emphasized. 16 refs

  8. Magnetohydrodynamic stability of broad line region clouds

    CERN Document Server

    Krause, Martin; Burkert, Andreas

    2012-01-01

    Hydrodynamic stability has been a longstanding issue for the cloud model of the broad line region in active galactic nuclei. We argue that the clouds may be gravitationally bound to the supermassive black hole. If true, stabilisation by thermal pressure alone becomes even more difficult. We further argue that if magnetic fields should be present in such clouds at a level that could affect the stability properties, they need to be strong enough to compete with the radiation pressure on the cloud. This would imply magnetic field values of a few Gauss for a sample of Active Galactic Nuclei we draw from the literature. We then investigate the effect of several magnetic configurations on cloud stability in axi-symmetric magnetohydrodynamic simulations. For a purely azimuthal magnetic field which provides the dominant pressure support, the cloud first gets compressed by the opposing radiative and gravitational forces. The pressure inside the cloud then increases, and it expands vertically. Kelvin-Helmholtz and colu...

  9. Destructive Single-Event Failures in Schottky Diodes

    Science.gov (United States)

    Casey, Megan C.; Lauenstein, Jean-Marie; Gigliuto, Robert A.; Wilcox, Edward P.; Phan, Anthony M.; Kim, Hak; Chen, Dakai; LaBel, Kenneth A.

    2014-01-01

    This presentation contains test results for destructive failures in DC-DC converters. We have shown that Schottky diodes are susceptible to destructive single-event effects. Future work will be completed to identify parameter that determines diode susceptibility.

  10. High Performance Single Nanowire Tunnel Diodes

    DEFF Research Database (Denmark)

    Wallentin, Jesper; Persson, Johan Mikael; Wagner, Jakob Birkedal;

    is the tunnel (Esaki) diode, which provides a low-resistance connection between junctions. We demonstrate an InP-GaAs NW axial heterostructure with tunnel diode behavior. InP and GaAs can be readily n- and p-doped, respectively, and the heterointerface is expected to have an advantageous type II band alignment...... NWs were contacted in a NW-FET setup. Electrical measurements at room temperature display typical tunnel diode behavior, with a Peak-to-Valley Current Ratio (PVCR) as high as 8.2 and a peak current density as high as 329 A/cm2. Low temperature measurements show improved PVCR of up to 27.6....

  11. Self-magnetically insulated ion diode

    International Nuclear Information System (INIS)

    Light ion diodes for producing 1--100 TW ion beams are required for inertial confinement fusion. The theory, numerical simulations, and experiments on a self-magnetically insulated ion diode are presented. The treatment is from the point of view of a self-magnetically insulated transmission line with an ion loss current and differs from the usual treatment of the pinched electron beam diode. The simulations show that the ratio V/IZ0=0.25 in such a structure with voltage V, local total current I, and local vacuum wave impedance Z0. The ion current density is enhanced by a factor of approximately 2 over the simple space-charge limited value. The simulation results are verified in an experiment. An analytical theory is then presented for scaling the results to produce a focused beam of protons with a power of up to 1013 W

  12. Drivers for High Power Laser Diodes

    Institute of Scientific and Technical Information of China (English)

    Yankov P; Todorov D; Saramov E

    2006-01-01

    During the last year the high power laser diodes jumped over the 1 kW level of CW power for a stack,and the commercial 1 cm bars reached 100 W output optical power at the standard wavelengths around 800 nm and 980 nm. The prices are reaching the industry acceptable levels. All Nd:YAG and fiber industrial lasers manufacturers have developed kW prototypes. Those achievements have set new requirements for the power supplies manufactuers-high and stable output current, and possibilities for fast control of the driving current, keeping safe the expensive laser diode. The fast switching frequencies also allow long range free space communications and optical range finding. The high frequencies allow the design of a 3D laser radar with high resolution and other military applications. The prospects for direct laser diode micro machining are also attractive.

  13. Channelized-Coplanar-Waveguide PIN-Diode Switches

    Science.gov (United States)

    Ponchak, G. E.; Simons, R. N.

    1992-01-01

    Three positive/intrinsic/negative (PIN-diode) reflective CPW (coplanar waveguide) switches demonstrated. First includes series-mounted diode to bridge gap in center strip conductor of CPW. Second includes pair of diodes to short center strip conductor to ground planes. Third includes diode to switch between band-pass filter and notch filter. Isolation exceeds 20 dB, while insertion loss is less than 1 dB.

  14. Change in Species Diversity during Recovering Process of Evergreen Broad-leaved Fo rest

    Institute of Scientific and Technical Information of China (English)

    WenYuanguang; LiuShirong; ChenFang; HeTatping; LiangHongwen

    2005-01-01

    Evergreen broad-leaved forest is one of the most important vegetation types in China. Because of the human activities, evergreen broad-leaved forest has been destroyed extensively, leading to degraded ecosystem. It is urgent to conserve and restore these natural forests in China.tn this paper, the tendency and rate of species diversity restoration of the evergreen broad-lea ved forest in Darning Mountain has been studied. The main results are as follows:(a) in subtropical mid-mountain area, species diversity in degraded evergreen broad-leaved forest can be restored. Through analyzing b diversity index of communities in different time and space, it was found that the species composition of communities tend to be the same as that in the zonal evergreen broad-leaved forest. (b) The restoration rate of evergreen broad-leaved forest was very fast. Planting Chinese fir after clear-cutting and controlled burning of the forest 178 species appeared in a 60Om2, sample area after 20 years"" natural recovering. Among these species, 58 were tree layer and the height of community reached 18m, The survey suggested that it would take only 20 years for the degraded forest to develop into community composed of light demanding broad-leaved pioneer trees and rain-tolerance broad-leaved trees, and it need another 40-80 years to reach the stage consisting of min-tulerance evergreen broad-leaved trees, (c) Species number increased quickly at the early stage (2-20 years) during vegetation recovering process toward the climax, and decreased at the min-stage (50-60 years ), then maintained a relatively stable level at the late-stage (over 150 years).

  15. Laser-diode pumped Nd:YAG lasers; Laser diode reiki Nd:YAG lasear

    Energy Technology Data Exchange (ETDEWEB)

    Yuasa, H.; Akiyama, Y.; Nakayama, M. [Toshiba Corp., Tokyo (Japan)

    2000-04-01

    Laser-diode pumped Nd:YAG lasers are expected to be applied to laser processing fields such as welding, cutting, drilling, and marking due to their potential for high efficiency and compactness. We are designing and developing laser-diode pumped Nd:YAG lasers using numerical analysis simulation techniques such as ray tracing and thermal analysis. We have succeeded in achieving a laser power of more than 3 kW with 20% efficiency, which is the best ever obtained. In addition, we have developed a laser-diode pumped green laser by second harmonic generation, for precision machining on silicon wafers. (author)

  16. Analog+digital phase and frequency detector for phase locking of diode lasers

    OpenAIRE

    Cacciapuoti, L.; M. De Angelis; Fattori, M.; Lamporesi, G.; Petelski, T.; Prevedelli, M.; Stuhler, J.; Tino, G. M.

    2005-01-01

    We describe a type of phase and frequency detector employing both an analog phase detector and a digital phase and frequency detector. The analog and digital detectors are mutually exclusive so that only one of them is active at any given time, resulting in a phase detector with both the broad capture range of digital circuits and the high speed and low noise of analog mixers. The detector has been used for phase locking the diode lasers generating the sequence of Raman pulses in an atom inte...

  17. A Flexible Blue Light-Emitting Diode Based on ZnO Nanowire/Polyaniline Heterojunctions

    OpenAIRE

    Liu, Y Y; Wang, X. Y.; Cao, Y; X. D. Chen; Xie, S. F.; X. J. ZHENG; Zeng, H. D.

    2013-01-01

    An organic/inorganic light-emitting diode (LED) consisting of n-type vertically aligned ZnO nanowires (NWs) and p-type proton acid doped polyaniline (PANi) is reported. The device was fabricated on flexible indium-tin-oxide (ITO) coated polyethylene terephthalate (PET) substrate. A broad blue light emission band ranging from 390 nm to 450 nm was observed in the electroluminescence (EL) spectra of the device, which was related to the interface recombination of electrons in the conduction band ...

  18. High-speed 405-nm superluminescent diode (SLD) with 807-MHz modulation bandwidth.

    Science.gov (United States)

    Shen, Chao; Lee, Changmin; Ng, Tien Khee; Nakamura, Shuji; Speck, James S; DenBaars, Steven P; Alyamani, Ahmed Y; El-Desouki, Munir M; Ooi, Boon S

    2016-09-01

    III-nitride LEDs are fundamental components for visible-light communication (VLC). However, the modulation bandwidth is inherently limited by the relatively long carrier lifetime. In this letter, we present the 405 nm emitting superluminescent diode (SLD) with tilted facet design on semipolar GaN substrate, showing a broad emission of ~9 nm at 20 mW optical power. Owing to the fast recombination (τe-3 was obtained using on-off keying modulation scheme, suggesting the SLD being a high-speed transmitter for VLC applications. PMID:27607634

  19. Determining internal screening electric field of working polymer light emitting diodes

    Science.gov (United States)

    Kanemoto, Katsuichi; Takahashi, Takahiro; Hashimoto, Hideki

    2016-07-01

    This study provides a method of determining the internal electric field of polymer light emitting diodes (LEDs) in the working condition. The method employs Stark signals induced by triangular shaped pulse biases and enables estimates of the internal field in a broad voltage region. The internal field under forward bias is shown to be determined by the screening effect caused by injected carriers. Spatial distribution calculated for the LED suggests the presence of strong electric field formed by accumulated carriers near the electrodes. The proposed method is applicable to a variety of devices and can promote understanding of veiled roles of internal fields on device operation.

  20. Quantum chaos with non-periodic, complex orbits in the Resonant Tunneling Diode

    OpenAIRE

    Saraga, D. S.; Monteiro, T. S.

    1998-01-01

    We show that a special type of orbits, which are non-periodic and complex, 'Saddle Orbits' (SOs) describe accurately the quantal and experimental current oscillations in the Resonant Tunneling Diode in tilted fields. This is the first demonstration that one needs to abandon the periodic orbits (POs) paradigm in favour of this new and peculiar type of orbit. The SOs solve the puzzle of broad regions of experimental oscillations where we find no real or complex PO that can explain the data. The...

  1. Quantum chaos with non-periodic, complex orbits in the Resonant Tunneling Diode

    CERN Document Server

    Saraga, D S

    1998-01-01

    We show that a special type of orbits, which are non-periodic and complex, 'Saddle Orbits' (SOs) describe accurately the quantal and experimental current oscillations in the Resonant Tunneling Diode in tilted fields. This is the first demonstration that one needs to abandon the periodic orbits (POs) paradigm in favour of this new and peculiar type of orbit. The SOs solve the puzzle of broad regions of experimental oscillations where we find no real or complex PO that can explain the data. The SOs succeeds in regimes involving several non-isolated POs, where PO formulas fail.

  2. Application of diode lasers to the isotopically selective determination of uranium in oxides by optogalvanic spectroscopy

    Science.gov (United States)

    Young, J. P.; Barshick, C. M.; Shaw, R. W.; Ramsey, J. M.

    1995-04-01

    We have observed isotopically selective diode laser-excited optogalvanic effects in uranium at 778.42 and 776.10 nm. The samples were natural abundance uranium oxide, as well as depleted (0.3% 235U), natural (0.7% 235U) and enriched (9.75% 235U) uranium metal or powders. The measurements were carried out in a demountable-cathode glow discharge cell. Preliminary evaluations of precision for uranium isotopic ratios measured using this technique suggest that it should have broad analytical applications for uranium and other amenable actinides or lanthanides.

  3. More Is Better: Selecting for Broad Host Range Bacteriophages.

    Science.gov (United States)

    Ross, Alexa; Ward, Samantha; Hyman, Paul

    2016-01-01

    Bacteriophages are viruses that infect bacteria. In this perspective, we discuss several aspects of a characteristic feature of bacteriophages, their host range. Each phage has its own particular host range, the range of bacteria that it can infect. While some phages can only infect one or a few bacterial strains, other phages can infect many species or even bacteria from different genera. Different methods for determining host range may give different results, reflecting the multiple mechanisms bacteria have to resist phage infection and reflecting the different steps of infection each method depends on. This makes defining host range difficult. Another difficulty in describing host range arises from the inconsistent use of the words "narrow" and especially "broad" when describing the breadth of the host range. Nearly all bacteriophages have been isolated using a single host strain of bacteria. While this procedure is fairly standard, it may more likely produce narrow rather than broad host range phage. Our results and those of others suggest that using multiple host strains during isolation can more reliably produce broader host range phages. This challenges the common belief that most bacteriophages have a narrow host range. We highlight the implications of this for several areas that are affected by host range including horizontal gene transfer and phage therapy. PMID:27660623

  4. Automatic and controlled processing and the Broad Autism Phenotype.

    Science.gov (United States)

    Camodeca, Amy; Voelker, Sylvia

    2016-01-30

    Research related to verbal fluency in the Broad Autism Phenotype (BAP) is limited and dated, but generally suggests intact abilities in the context of weaknesses in other areas of executive function (Hughes et al., 1999; Wong et al., 2006; Delorme et al., 2007). Controlled processing, the generation of search strategies after initial, automated responses are exhausted (Spat, 2013), has yet to be investigated in the BAP, and may be evidenced in verbal fluency tasks. One hundred twenty-nine participants completed the Delis-Kaplan Executive Function System Verbal Fluency test (D-KEFS; Delis et al., 2001) and the Broad Autism Phenotype Questionnaire (BAPQ; Hurley et al., 2007). The BAP group (n=53) produced significantly fewer total words during the 2nd 15" interval compared to the Non-BAP (n=76) group. Partial correlations indicated similar relations between verbal fluency variables for each group. Regression analyses predicting 2nd 15" interval scores suggested differentiation between controlled and automatic processing skills in both groups. Results suggest adequate automatic processing, but slowed development of controlled processing strategies in the BAP, and provide evidence for similar underlying cognitive constructs for both groups. Controlled processing was predictive of Block Design score for Non-BAP participants, and was predictive of Pragmatic Language score on the BAPQ for BAP participants. These results are similar to past research related to strengths and weaknesses in the BAP, respectively, and suggest that controlled processing strategy use may be required in instances of weak lower-level skills. PMID:26652842

  5. More Is Better: Selecting for Broad Host Range Bacteriophages.

    Science.gov (United States)

    Ross, Alexa; Ward, Samantha; Hyman, Paul

    2016-01-01

    Bacteriophages are viruses that infect bacteria. In this perspective, we discuss several aspects of a characteristic feature of bacteriophages, their host range. Each phage has its own particular host range, the range of bacteria that it can infect. While some phages can only infect one or a few bacterial strains, other phages can infect many species or even bacteria from different genera. Different methods for determining host range may give different results, reflecting the multiple mechanisms bacteria have to resist phage infection and reflecting the different steps of infection each method depends on. This makes defining host range difficult. Another difficulty in describing host range arises from the inconsistent use of the words "narrow" and especially "broad" when describing the breadth of the host range. Nearly all bacteriophages have been isolated using a single host strain of bacteria. While this procedure is fairly standard, it may more likely produce narrow rather than broad host range phage. Our results and those of others suggest that using multiple host strains during isolation can more reliably produce broader host range phages. This challenges the common belief that most bacteriophages have a narrow host range. We highlight the implications of this for several areas that are affected by host range including horizontal gene transfer and phage therapy.

  6. Peculiar Broad Absorption Line Quasars found in DPOSS

    CERN Document Server

    Brunner, R J; Djorgovski, S G; Gal, R R; Mahabal, A A; Lopes, P A A; De Carvalho, R R; Odewahn, S C; Castro, S; Thompson, D; Chaffee, F; Darling, J; Desai, V; Brunner, Robert J.; Hall, Patrick B.

    2003-01-01

    With the recent release of large (i.e., > hundred million objects), well-calibrated photometric surveys, such as DPOSS, 2MASS, and SDSS, spectroscopic identification of important targets is no longer a simple issue. In order to enhance the returns from a spectroscopic survey, candidate sources are often preferentially selected to be of interest, such as brown dwarfs or high redshift quasars. This approach, while useful for targeted projects, risks missing new or unusual species. We have, as a result, taken the alternative path of spectroscopically identifying interesting sources with the sole criterion being that they are in low density areas of the g - r and r - i color-space defined by the DPOSS survey. In this paper, we present three peculiar broad absorption line quasars that were discovered during this spectroscopic survey, demonstrating the efficacy of this approach. PSS J0052+2405 is an Iron LoBAL quasar at a redshift z = 2.4512 with very broad absorption from many species. PSS J0141+3334 is a reddened...

  7. Phase-change radiative thermal diode

    CERN Document Server

    Ben-Abdallah, Philippe

    2013-01-01

    A thermal diode transports heat mainly in one preferential direction rather than in the opposite direction. This behavior is generally due to the non-linear dependence of certain physical properties with respect to the temperature. Here we introduce a radiative thermal diode which rectifies heat transport thanks to the phase transitions of materials. Rectification coefficients greater than 70% and up to 90% are shown, even for small temperature differences. This result could have important applications in the development of futur contactless thermal circuits or in the conception of radiative coatings for thermal management.

  8. Thermal diode made by nematic liquid crystal

    Science.gov (United States)

    Melo, Djair; Fernandes, Ivna; Moraes, Fernando; Fumeron, Sébastien; Pereira, Erms

    2016-09-01

    This work investigates how a thermal diode can be designed from a nematic liquid crystal confined inside a cylindrical capillary. In the case of homeotropic anchoring, a defect structure called escaped radial disclination arises. The asymmetry of such structure causes thermal rectification rates up to 3.5% at room temperature, comparable to thermal diodes made from carbon nanotubes. Sensitivity of the system with respect to the heat power supply, the geometry of the capillary tube and the molecular anchoring angle is also discussed.

  9. Investigation of MIM Diodes for RF Applications

    KAUST Repository

    Khan, Adnan

    2015-05-01

    Metal Insulator Metal (MIM) diodes that work on fast mechanism of tunneling have been used in a number of very high frequency applications such as (Infra-Red) IR detectors and optical Rectennas for energy harvesting. Their ability to operate under zero bias condition as well as the possibility of realizing them through printing makes them attractive for (Radio Frequency) RF applications. However, MIM diodes have not been explored much for RF applications. One reason preventing their widespread RF use is the requirement of a very thin oxide layer essential for the tunneling operation that requires sophisticated nano-fabrication processes. Another issue is that the reliability and stable performance of MIM diodes is highly dependent on the surface roughness of the metallic electrodes. Finally, comprehensive RF characterization has not been performed for MIM diodes reported in the literature, particularly from the perspective of their integration with antennas as well as their rectification abilities. In this thesis, various metal deposition methods such as sputtering, electron beam evaporation, and Atomic Layer Deposition (ALD) are compared in pursuit of achieving low surface roughness. It is worth mentioning here that MIM diodes realized through ALD method have been presented for the first time in this thesis. Amorphous metal alloy have also been investigated in terms of their low surface roughness. Zinc-oxide has been investigated for its suitability as a thin dielectric layer for MIM diodes. Finally, comprehensive RF characterization of MIM diodes has been performed in two ways: 1) by standard S-parameter methods, and 2) by investigating their rectification ability under zero bias operation. It is concluded from the Atomic Force Microscopy (AFM) imaging that surface roughness as low as sub 1 nm can be achieved reliably from crystalline metals such as copper and platinum. This value is comparable to surface roughness achieved from amorphous alloys, which are non

  10. External cavity diode laser around 657 nm

    Institute of Scientific and Technical Information of China (English)

    Desheng Lǖ (吕德胜); Kaikai Huang (黄凯凯); Fengzhi Wang (王凤芝); DonghaiYang (杨东海)

    2003-01-01

    Operating a laser diode in an external cavity, which provides frequency-selective feedback, is a very effective method to tune the laser frequency to a range far from its free running frequency. For the Ca atomic Ramsey spectroscopy experiment, we have constructed a 657-nm laser system based on the LittmanMetcalf configuration with a 660-nm commercial laser diode. Continuously 10-GHz tuning range was achieved with about 100-kHz spectral linewidth, measured with beat-note spectrum of two identical laser systems.

  11. Laser diode initiated detonators for space applications

    Science.gov (United States)

    Ewick, David W.; Graham, J. A.; Hawley, J. D.

    1993-01-01

    Ensign Bickford Aerospace Company (EBAC) has over ten years of experience in the design and development of laser ordnance systems. Recent efforts have focused on the development of laser diode ordnance systems for space applications. Because the laser initiated detonators contain only insensitive secondary explosives, a high degree of system safety is achieved. Typical performance characteristics of a laser diode initiated detonator are described in this paper, including all-fire level, function time, and output. A finite difference model used at EBAC to predict detonator performance, is described and calculated results are compared to experimental data. Finally, the use of statistically designed experiments to evaluate performance of laser initiated detonators is discussed.

  12. Relativistic Brillouin flow in the high ν/γ diode

    International Nuclear Information System (INIS)

    Relativistic Brillouin solutions have been derived for electron flow in crossed electric and magnetic fields. The application of these solutions to the high ν/γ diode is discussed and an approximate analytical expression for the anode current is derived. Measurements of diode current are compared to the theoretical and empirical expressions for diode current which have been developed

  13. A 640 GHz Planar-Diode Fundamental Mixer/Receiver

    Science.gov (United States)

    Siegel, P.; Mehdi, I.; Dengler, R.; Lee, T.; Humphrey, D.; Pease, A.

    1998-01-01

    The design and performance of a 640 GHz solid-state receiver using a fundamental planar-Schottky-diode mixer, InP Gunn diode oscillator, whisker-contacted Schottky-varactor-diode sextupler and folded-Fabry-Perot diplexer are reported.

  14. Analysis of nanosecond breaking of a high-density current in SOS diodes

    Science.gov (United States)

    Grekhov, I. V.; Lyublinskii, A. G.; Smirnova, I. A.

    2015-11-01

    Effect of a sharp (nanosecond) breaking of the reverse current with a density on the order of 103-104 A/cm2 in a silicon diode upon switching from direct to reverse bias voltage (so-called silicon opening switch, or SOS effect) is widely used in nanosecond technologies of gigawatt powers. For detailed analysis of the SOS effect, we constructed a special setup with small stray inductance, which makes it possible to test single SOS diodes with a working area of 1-2 mm2 in a wide range of current densities. Our experiments show, in particular, that the numerical model of the SOS effect developed at the Institute of Electrophysics, Ural Branch, Russian Academy of Sciences successfully described the experimental results. It is also shown that the charge extracted from the diode structure by the reverse current exceeds the charge introduced by a direct current pulse by not more than 10%, indicating a relatively small role of ionization processes. The possibility to carry out experiments on single samples with a small surface area allows us to study the SOS effect and considerably facilitates investigations aimed at the perfection of the design of SOS diodes.

  15. Active-matrix organic light-emitting diode displays on flexible metal foil substrates

    Science.gov (United States)

    Chuang, Ta-Ko

    This dissertation presents the research efforts that deal with the development of polysilicon thin film transistors (TFTs) on stainless-steel-foil substrates, the implementation of high-resolution flexible active-matrix backplanes, and the integration of the flexible polysilicon TFT backplanes with polymer light-emitting diodes. This research investigated the preparation of the steel foil substrates, the fabrication of flexible polysilicon TFT backplanes and polymer light emitting diodes (PLEDs), and the encapsulation of the flexible Active Matrix Polymer Light Emitting Diode displays. The first successful integration of polysilicon TFT backplane with PLEDs onto light-weight, robust, and flexible stainless-steel-foil substrates is presented. A top-emitting, monochrome active-matrix polymer light-emitting diode (AM-PLED) display, having the VGA (640x480) format and a 230 dpi resolution, is demonstrated for the first time on flexible stainless-steel-foil substrates. This work validates the compatibility of the polysilicon technology for high-resolution flexible AM-PLED displays. Furthermore, this work shows that a variety of other large-area microelectronics could also be implemented onto flexible metal foils, benefiting by the metal oil dimensional stability and ability to withstand high process temperature. In conclusion, the polysilicon TFT technology combining with metal-foil substrates opens up a new road for flexible displays as well as large-area flexible electronic applications.

  16. Assessing Ground-Water Contamination Across Broad Regions

    Science.gov (United States)

    Helsel, D. R.

    2001-05-01

    Ground-water quality is measured at discrete locations, and often interpreted at local scales. However, regional patterns in ground-water quality can be used to: 1) Assess relations between water quality and broad patterns of human activities or geochemical variation; 2) Reduce monitoring costs by sampling more frequently in areas of highest concentration or vulnerability; 3) Prioritize locations for prevention efforts such as for nitrate reduction, to obtain maximum benefits for lower costs; and 4) Project water-quality conditions to unsampled locations based on a regional understanding or "model". Examples of methods for modeling and interpreting ground-water quality at regional scales are presented along with their utility for cost reduction and contamination prevention purposes.

  17. Coupling of an applied field magnetically insulated ion diode to a high power magnetically insulated transmission line system

    International Nuclear Information System (INIS)

    The coupling of energy from a high power pulsed accelerator through a long triplate magnetically insulated transmission line (MITL) in vacuum to an annular applied magnetic field insulated extraction ion diode is examined. The narrow power transport window and the wave front erosion of the MITL set stringent impedance history conditions on the diode load. A new ion diode design developed to satisfy these criteria with marginal electron insulation is presented. The LION accelerator is used to provide a positive polarity 1.5 MV, 350 kA, 40 ns FWHM pulse with a 30 kA/ns current rate from a triplate MITL source. A transition converts the triplate into a cylindrical cross section which flares into the ion diode load. Extensive current and voltage measurements performed along this structure and on the extracted ion beam provide conclusive evidence that the self insulation condition of the MITL is maintained in the transition by current loss alone. The ion diode utilizes a radial magnetic field between a grounded cathode annular emission tip and a disk anode. A 50 cm2 dielectric/metal anode area serves as the ion plasma source subject to direct electron bombardment from the opposing cathode tip under marginal magnetic insulation conditions. The ions extracted cross the radial magnetic field and exit the diode volume as an annular cross section beam of peak current about 100 kA. The diode current gradually converts from the initial electron flow to nearly 100% ion current after 30 ns, coupling 60% of the diode energy into ions

  18. Photoionisation modelling of the broad line region

    Science.gov (United States)

    King, Anthea

    2016-08-01

    Two of the most fundamental questions regarding the broad line region (BLR) are "what is its structure?" and "how is it moving?" Baldwin et al. (1995) showed that by summing over an ensemble of clouds at differing densities and distances from the ionising source we can easily and naturally produce a spectrum similar to what is observed for AGN. This approach is called the `locally optimally emitting clouds' (LOC) model. This approach can also explain the well-observed stratification of emission lines in the BLR (e.g. Clavel et al. 1991, Peterson et al. 1991, Kollatschny et al. 2001) and `breathing' of BLR with changes in the continuum luminosity (Netzer & Mor 1990, Peterson et al. 2014) and is therefore a generally accepted model of the BLR. However, LOC predictions require some assumptions to be made about the distribution of the clouds within the BLR. By comparing photoionization predictions, for a distribution of cloud properties, with observed spectra we can infer something about the structure of the BLR and distribution of clouds. I use existing reverberation mapping data to constrain the structure of the BLR by observing how individual line strengths and ratios of different lines change in high and low luminosity states. I will present my initial constraints and discuss the challenges associated with the method.

  19. High Current Density 2D/3D Esaki Tunnel Diodes

    CERN Document Server

    Krishnamoorthy, Sriram; Lee, Choong Hee; Zhang, Yuewei; McCulloch, William D; Johnson, Jared M; Hwang, Jinwoo; Wu, Yiying; Rajan, Siddharth

    2016-01-01

    The integration of two-dimensional materials such as transition metal dichalcogenides with bulk semiconductors offer interesting opportunities for 2D/3D heterojunction-based novel device structures without any constraints of lattice matching. By exploiting the favorable band alignment at the GaN/MoS2 heterojunction, an Esaki interband tunnel diode is demonstrated by transferring large area, Nb-doped, p-type MoS2 onto heavily n-doped GaN. A peak current density of 446 A/cm2 with repeatable room temperature negative differential resistance, peak to valley current ratio of 1.2, and minimal hysteresis was measured in the MoS2/GaN non-epitaxial tunnel diode. A high current density of 1 kA/cm2 was measured in the Zener mode (reverse bias) at -1 V bias. The GaN/MoS2 tunnel junction was also modeled by treating MoS2 as a bulk semiconductor, and the electrostatics at the 2D/3D interface was found to be crucial in explaining the experimentally observed device characteristics.

  20. Temperature control during diode laser welding in a human cornea

    Science.gov (United States)

    Rossi, Francesca; Matteini, Paolo; Pini, Roberto; Menabuoni, Luca

    2007-07-01

    Diode laser welding is a technique proposed in ophthalmic surgery to induce immediate sealing of clear corneal wounds. The welding effect is achieved irradiating the area, previously treated with a chromophore, by the use of a low power diode laser: the resulting thermal effect induces structural modifications in the stromal collagen, that welds upon cooling. We present a study on the temperature dynamics developing during welding in a human eye. An infrared thermocamera was used to measure the temperature variations on the surface of the cornea during clinical penetrating keratoplasty (corneal transplant). The experimental data were used as a starting point for a theoretical investigation of the temperature rising inside the ocular structures: we developed a mathematical model based on the bio-heat equation and solved by the use of the Finite Element Method (FEM). The predictive accuracy was verified by comparing the temperature post-processing description with the results obtained from the thermographic data. The model was then used to study the temperature rise and heat propagation inside the eye. Experimental results and model analysis indicated the occurrence of heat confinement during the treatment procedure and a modest enhancement of the temperature (reaching about 55°C inside the laser treated wound), thus evidencing the safety of the procedure in clinical applications.

  1. Final report for EDI energy conservation with diode light; Slutrapport for EDI energibesparelser med diodelys

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2006-07-01

    The aim of this project has been to develop technological knowledge and a competence platform for utilization of new light emitting diode technology for general lighting purposes. Furthermore the project has aimed at developing a 3 W light diode bulb to replace 15-20 W filament bulbs and halogen spotlights, and thereby demonstrating a large energy conservation potential in the use of LED technology for lighting purposes. (BA)

  2. Diode laser based light sources for biomedical applications

    DEFF Research Database (Denmark)

    Müller, André; Marschall, Sebastian; Jensen, Ole Bjarlin;

    2013-01-01

    Diode lasers are by far the most efficient lasers currently available. With the ever-continuing improvement in diode laser technology, this type of laser has become increasingly attractive for a wide range of biomedical applications. Compared to the characteristics of competing laser systems, diode...... lasers simultaneously offer tunability, high-power emission and compact size at fairly low cost. Therefore, diode lasers are increasingly preferred in important applications, such as photocoagulation, optical coherence tomography, diffuse optical imaging, fluorescence lifetime imaging, and terahertz...... imaging. This review provides an overview of the latest development of diode laser technology and systems and their use within selected biomedical applications....

  3. Study on the Beam Quality of Uncoupled Laser Diode Arrays

    Institute of Scientific and Technical Information of China (English)

    GAO Chunqing; WEI Guanghui

    2001-01-01

    The beam quality of uncoupled laser diode array is studied theoretically and experimentally. By calculating the second order moments of the beam emitted from the laser diode array, the dependence of the M2-factor of the laser diode array on the M2-factor of the single emitter, the ratio of the emitting region to the non-emitting space, and the number of emitters, has been deduced. From the measurement of the beam propagation the M2-factor of a laser diode bar is experimentally determined. The measured M2-factor of the laser diode bar agrees with the theoretical prediction.

  4. Achromatic optical diode in fiber optics

    CERN Document Server

    Berent, Michal; Vitanov, Nikolay V

    2013-01-01

    We propose a broadband optical diode, which is composed of one achromatic reciprocal quarter-wave plate and one non-reciprocal quarter-wave plate, both placed between two crossed polarizers. The presented design of achromatic wave plates relies on an adiabatic evolution of the Stokes vector, thus, the scheme is robust and efficient. The possible simple implementation using fiber optics is suggested.

  5. Tunnel Diode Discriminator with Fixed Dead Time

    DEFF Research Database (Denmark)

    Diamond, J. M.

    1965-01-01

    A solid state discriminator for the range 0.4 to 10 V is described. Tunnel diodes are used for the discriminator element and in a special fixed dead time circuit. An analysis of temperature stability is presented. The regulated power supplies are described, including a special negative resistance...

  6. Optical diodes. [primary mechanism is electronic tunneling

    Science.gov (United States)

    Gustafson, T. K.

    1976-01-01

    Research on metal-barrier-metal structures is reviewed. Topics discussed include: demonstration of antenna coupling and rectification characteristics with high resistance evaporated structures at a wavelength of 10 microns; application of these devices to coherent conversion of laser radiation and infrared and optical circuit elements; and comparison of the point-contact type of diode structure and the newly developed photolithographic structures.

  7. Light-Emitting Diodes: A Hidden Treasure

    Science.gov (United States)

    Planinšic, Gorazd; Etkina, Eugenia

    2014-01-01

    LEDs, or light-emitting diodes, are cheap, easy to purchase, and thus commonly used in physics instruction as indicators of electric current or as sources of light (Fig. 1). In our opinion LEDs represent a unique piece of equipment that can be used to collect experimental evidence, and construct and test new ideas in almost every unit of a general…

  8. Phosphorescent Nanocluster Light-Emitting Diodes.

    Science.gov (United States)

    Kuttipillai, Padmanaban S; Zhao, Yimu; Traverse, Christopher J; Staples, Richard J; Levine, Benjamin G; Lunt, Richard R

    2016-01-13

    Devices utilizing an entirely new class of earth abundant, inexpensive phosphorescent emitters based on metal-halide nanoclusters are reported. Light-emitting diodes with tunable performance are demonstrated by varying cation substitution to these nanoclusters. Theoretical calculations provide insight about the nature of the phosphorescent emitting states, which involves a strong pseudo-Jahn-Teller distortion.

  9. High-Performance Single Nanowire Tunnel Diodes

    DEFF Research Database (Denmark)

    Wallentin, Jesper; Persson, Johan Mikael; Wagner, Jakob Birkedal;

    2010-01-01

    We demonstrate single nanowire tunnel diodes with room temperature peak current densities of up to 329 A/cm(2). Despite the large surface to volume ratio of the type-II InP-GaAs axial heterostructure nanowires, we measure peak to valley current ratios (PVCR) of up to 8.2 at room temperature and 27...

  10. Diode Arrays and QA of Advanced Techniques

    Science.gov (United States)

    Gutiérrez PhD, Alonso N.; Calvo Msc, Oscar

    2010-11-01

    Dosimetric verification of delivery for intensity-modulated radiotherapy (IMRT) treatment plans is critical to ensure accurate and safe patient treatments. Commonly, a point dose measurement using a calibrated ion chamber as well as a planar dose measurement using film was traditionally implemented for dosimetric quality assurance (QA) of treatment plans. However, new products have become commercially available in which both an absolute and coarse planar dose measurements can be acquired simultaneously by the use of an array of detectors—either ion chamber- or diode-based. Currently, two devices, MapCHECK and Delta4, utilize diode technology for planar dose measurements with Delta4 implementing an orthogonal biplanar arrangement versus the common singular plane. Both devices have been thoroughly clinically characterized with more published experience in the literature available for the MapCHECK due to the novelty of Delta4. In this review, an overview of basic diode dosimetry and both diode array systems is presented with an emphasis on our research and clinical experience of the Delta4.

  11. Superluminescent Diode Light Sources for OCT

    Science.gov (United States)

    Shidlovski, Vladimir R.

    Contrary to laser diodes, the path of superluminescent diodes (SLDs) to widespread practical use was much longer. There was always a scientific interest in "superluminescent" light output from laser diode structures slightly below threshold that might be considerably enhanced by "damping" of the laser resonator. SLD design efforts were intensified in early 1980s when it was proved that they are "light sources of choice" for fiber-optic gyroscopes. The next wave of interest to SLDs as a "stand-alone" type of semiconductor emitters was related to advances in OCT technologies. Challenging OCT requirements, e.g. simultaneous high-power, high brightness and very low coherence length of a light source, resulted in the development of new generation of SLDs characterized by output power and brightness the same as that of medium-to-high power laser diodes, but with the spectral width and flatness of edge-emitting LEDs. In this chapter, the main principles of the development of powerful broadband SLDs and ultra-low-coherence SLD-based light sources in 650-1600 nm spectral range, and the main parameters reported to date, are reviewed. Important aspects of SLD use in practice are discussed.

  12. Determining Extinction Ratio Of A Laser Diode

    Science.gov (United States)

    Unger, Glenn L.

    1992-01-01

    Improved technique to determine extinction ratio of pulsed laser diode based partly on definition of extinction ratio applicable to nonideal laser pulses. Heretofore, determinations involved assumption of ideal laser pulses, and neglected optical power from background light. Because power fluctuates during real pulse, more realistic to define extinction ratio in terms of energy obtained.

  13. Microring Diode Laser for THz Generation

    DEFF Research Database (Denmark)

    Mariani, S.; Andronico, A.; Favero, I.;

    2013-01-01

    We report on the modeling and optical characterization of AlGaAs/InAs quantum-dot microring diode lasers designed for terahertz (THz) difference frequency generation (DFG) between two whispering gallery modes (WGMs) around 1.3 $\\mu$m. In order to investigate the spectral features of this active...

  14. Gigahertz frequency comb from a diode-pumped solid-state laser.

    Science.gov (United States)

    Klenner, Alexander; Schilt, Stéphane; Südmeyer, Thomas; Keller, Ursula

    2014-12-15

    We present the first stabilization of the frequency comb offset from a diode-pumped gigahertz solid-state laser oscillator. No additional external amplification and/or compression of the output pulses is required. The laser is reliably modelocked using a SESAM and is based on a diode-pumped Yb:CALGO gain crystal. It generates 1.7-W average output power and pulse durations as short as 64 fs at a pulse repetition rate of 1 GHz. We generate an octave-spanning supercontinuum in a highly nonlinear fiber and use the standard f-to-2f carrier-envelope offset (CEO) frequency fCEO detection method. As a pump source, we use a reliable and cost-efficient commercial diode laser. Its multi-spatial-mode beam profile leads to a relatively broad frequency comb offset beat signal, which nevertheless can be phase-locked by feedback to its current. Using improved electronics, we reached a feedback-loop-bandwidth of up to 300 kHz. A combination of digital and analog electronics is used to achieve a tight phase-lock of fCEO to an external microwave reference with a low in-loop residual integrated phase-noise of 744 mrad in an integration bandwidth of [1 Hz, 5 MHz]. An analysis of the laser noise and response functions is presented which gives detailed insights into the CEO stabilization of this frequency comb.

  15. Broad spectrum anthelmintic potential of Cassia plants

    Institute of Scientific and Technical Information of China (English)

    Suman Kundu; Saptarshi Roy; Larisha Mawkhleing Lyndem

    2014-01-01

    Objective: To study the in vitro anthelmintic efficacy of Cassia alata (C. alata), Cassia(C. angustifolia) and Cassia occidentalis (C. occidentalis). angustifolia Methods: Crude ethanol extract from leaves of the three plants were prepared in rotary evaporator and different concentrations (10, 20 and 40 mg/mL) of leaf extracts were used for treatment on different representatives of helminthes (Heterakis gallinarum, Raillietina tetragona and Catatropis sp.) from domestic fowl (Gallus gallus domesticus). Loss of motility and death were monitored frequently.Results: C. alata showed early paralysis in all worms treated followed by C. angustifolia. C. occidentalis in combination with C. alata together caused early paralysis in all treated worms than the combination of C. alata with C. angustfolia. While Heterakis gallinarum in control survived for (81.33±2.07) h, treated worms lost their motility at (5.71±0.10) h, (6.60±0.86) h and (13.95±0.43) h with C. angustifolia, C. alata and C. occidentalis respectively at a concentration of 40 mg/mL which showed better efficacy than albendazole. Catatropis sp. survival period was (26.49±1.38) h in control, but with plant treatment, it lost its motility in just (0.57±0.08) h, (1.00±0.12) h and (1.47±0.40) h at 40 mg/mL concentration of C. alata, C. angustifolia and C. occidentalis respectively.Raillietina tetragona on the other hand became paralysed at (1.68±0.27) h, (2.95±0.29) h and (4.13±0.31) h with above concentrations treated with three plants respectively, however in control it survived up to (81.93±4.71) h.Conclusions:This present study indicated broad spectrum vermifugal activity of all plants tested.

  16. Validation, automatic generation and use of broad phonetic transcriptions

    NARCIS (Netherlands)

    Bael, Cristophe Patrick Jan Van

    2007-01-01

    Broad phonetic transcriptions represent the pronunciation of words as strings of characters from specifically designed symbol sets. In everyday life, broad phonetic transcriptions are often used as aids to pronounce (foreign) words. In addition, broad phonetic transcriptions are often used for lingu

  17. An investigation of laser oscillators and amplifiers using high intensity diode-pumping

    OpenAIRE

    Moore, Nicholas

    1998-01-01

    The work presented in this thesis is split into two related areas. The first area of research was the construction of high gain, high power, all-solid-state laser amplifiers for use in master oscillator, power amplifier (MOPA) systems. The second area was the operation of solid-state lasers on low gain transitions. The two areas are related by the fact that the primary aim in each was to maximise the available gain on a given laser transition. Two diode-pumped travelling wave amplifiers a...

  18. Qualification and Selection of Flight Diode Lasers for Space Applications

    Science.gov (United States)

    Liebe, Carl C.; Dillon, Robert P.; Gontijo, Ivair; Forouhar, Siamak; Shapiro, Andrew A.; Cooper, Mark S.; Meras, Patrick L.

    2010-01-01

    The reliability and lifetime of laser diodes is critical to space missions. The Nuclear Spectroscopic Telescope Array (NuSTAR) mission includes a metrology system that is based upon laser diodes. An operational test facility has been developed to qualify and select, by mission standards, laser diodes that will survive the intended space environment and mission lifetime. The facility is situated in an electrostatic discharge (ESD) certified clean-room and consist of an enclosed temperature-controlled stage that can accommodate up to 20 laser diodes. The facility is designed to characterize a single laser diode, in addition to conducting laser lifetime testing on up to 20 laser diodes simultaneously. A standard laser current driver is used to drive a single laser diode. Laser diode current, voltage, power, and wavelength are measured for each laser diode, and a method of selecting the most adequate laser diodes for space deployment is implemented. The method consists of creating histograms of laser threshold currents, powers at a designated current, and wavelengths at designated power. From these histograms, the laser diodes that illustrate a performance that is outside the normal are rejected and the remaining lasers are considered spaceborne candidates. To perform laser lifetime testing, the facility is equipped with 20 custom laser drivers that were designed and built by California Institute of Technology specifically to drive NuSTAR metrology lasers. The laser drivers can be operated in constant-current mode or alternating-current mode. Situated inside the enclosure, in front of the laser diodes, are 20 power-meter heads to record laser power throughout the duration of lifetime testing. Prior to connecting a laser diode to the current source for characterization and lifetime testing, a background program is initiated to collect current, voltage, and resistance. This backstage data collection enables the operational test facility to have full laser diode

  19. Runoff erosion in Portugal: A broad overview

    OpenAIRE

    Figueiredo, Tomás

    2013-01-01

    Soils are generally a scarce natural resource in Portugal as far as productivity is concerned (CNROA, 1983; Agroconsultores e Coba, 1991; Agroconsultores e Geometral, 1995). In fact, the major part of the territory is potentially not suitable for agriculture, corresponding to areas with misuse and over-exploitation of the soil resource in cropland, and to typical marginal land cover by forests and shrubs. The soils with moderate and high suitability are under agricultural use, more or less in...

  20. Broad-Spectrum Solution-Processed Photovoltaics

    Science.gov (United States)

    Ip, Alexander Halley

    High global demand for energy coupled with dwindling fossil fuel supply has driven the development of sustainable energy sources such as solar photovoltaics. Emerging solar technologies aim for low-cost, solution-processable materials which would allow wide deployment. Colloidal quantum dots (CQDs) are such a materials system which exhibits the ability to absorb across the entire solar spectrum, including in the infrared where many technologies cannot harvest photons. However, due to their nanocrystalline nature, CQDs are susceptible to surface-associated electronic traps which greatly inhibit performance. In this thesis, surface engineering of CQDs is presented through a combined ligand approach which improves the passivation of surface trap states. A metal halide treatment is found to passivate quantum dot surfaces in solution, while bifunctional organic ligands produce a dense film in solid state. This approach reduced midgap trap states fivefold compared with conventional passivation strategies and led to solar cells with a record certified 7.0% power conversion efficiency. The effect of this process on the electronic structure is studied through photoelectron spectroscopy. It is found that while the halide provides deep trap passivation, the nature of the metal cation on the CQD surface affects the density of band tail states. This effect is explored further through a wide survey of materials, and it is found that the coordination ability of the metal cation is responsible for the suppression of shallow traps. With this understanding of CQD surface passivation, broad spectral usage is then explored through a study of visible-absorbing organolead halide perovskite materials as well as narrow-bandgap CQD solar cells. Control over growth conditions and modification of electrode interfaces resulted in efficient perovskite devices with effective usages of visible photons. For infrared-absorbing CQDs, it is found that, in addition to providing surface trap

  1. Neoplasms treatment by diode laser with and without real time temperature control on operation zone

    Science.gov (United States)

    Belikov, Andrey V.; Gelfond, Mark L.; Shatilova, Ksenia V.; Sosenkova, Svetlana A.; Lazareva, Anastasia A.; Semyashkina, Yulia V.

    2016-04-01

    Results of nevus, papilloma, dermatofibroma, and basal cell skin cancer in vivo removal by a 980+/-10 nm diode laser with "blackened" tip operating in continuous (CW) mode and automatic power control (APC) mode are presented. The collateral damage width and width of graze wound area around the collateral damage area were demonstrated. The total damage area width was calculated as sum of collateral damage width and graze wound area width. The mean width of total damage area reached 1.538+/-0.254 mm for patient group with nevus removing by 980 nm diode laser operating in CW mode, papilloma - 0.586+/-0.453 mm, dermatofibroma - 1.568+/-0.437 mm, and basal cell skin cancer - 1.603+/-0.613 mm. The mean width of total damage area reached 1.201+/-0.292 mm for patient group with nevus removing by 980 nm diode laser operating in APC mode, papilloma - 0.413+/-0.418 mm, dermatofibroma - 1.240+/-0.546 mm, and basal cell skin cancer - 1.204+/-0.517 mm. It was found that using APC mode decreases the total damage area width at removing of these nosological neoplasms of human skin, and decreases the width of graze wound area at removing of nevus and basal cell skin cancer. At the first time, the dynamic of output laser power and thermal signal during laser removal of nevus in CW and APC mode is presented. It was determined that output laser power during nevus removal for APC mode was 1.6+/-0.05 W and for CW mode - 14.0+/-0.1 W. This difference can explain the decrease of the total damage area width and width of graze wound area for APC mode in comparison with CW mode.

  2. Improved field geometries for SABRE extraction ion diode operation with passive ion sources

    International Nuclear Information System (INIS)

    The SABRE Facility at Sandia National Laboratories is an integrated testbed for the study of high voltage ion beam production and transport in extraction geometry for inertial confinement fusion. Our major emphasis is on the development of active ion sources, but several techniques are under investigation to improve diode performance with passive hydrocarbon and LiF ion sources. The operation of passive sources is particularly sensitive to details of the magnetic and electric field geometries and can provide insight into divergence and parasitic load mechanisms which also affect high voltage diode performance with active sources. We demonstrate that an outer cathode lip extension can eliminate cathode feed electron participation in source turn-on and virtual cathode evolution. Experimental data and TWOQUICK PIC code simulations indicate that instability-induced cross-field diffusion of cathode tip electrons at small radius plays a dominant role in diode operation with a passive source. An improved diode geometry is presented with reduced feed electrode participation and better electron confinement at the anode emission area for lithium sources

  3. 640 x 480 pixel uncooled infrared FPA with SOI diode detectors

    Science.gov (United States)

    Ueno, Masashi; Kosasayama, Yasuhiro; Sugino, Takaki; Nakaki, Yoshiyuki; Fujii, Yoshio; Inoue, Hiromoto; Kama, Keisuke; Seto, Toshiki; Takeda, Munehisa; Kimata, Masafumi

    2005-05-01

    This paper describes the structure and performance of a 25-micron pitch 640 x 480 pixel uncooled infrared focal plane array (IR FPA) with silicon-on-insulator (SOI) diode detectors. The uncooled IR FPA is a thermal type FPA that has a temperature sensor of single crystal PN junction diodes formed in an SOI layer. In the conventional pixel structure, the temperature sensor and two support legs for thermal isolation are made in the lower level of the pixel, and an IR absorbing structure is made in the upper pixel level to cover almost the entire pixel area. The IR absorption utilizes IR reflections from the lower level. Since the reflection from the support leg portions is not perfect due to the slits in the metal reflector, the reflection becomes smaller as the support leg section increases in reduced pixel pitches. In order to achieve high thermal isolation and high IR absorption simultaneously, we have developed a new pixel structure that has an independent IR reflector between the lower and upper levels. The structure assures perfect IR reflection and thus improves IR absorption. The FPA shows a noise equivalent temperature difference (NETD) of 40 mK (f/1.0) and a responsivity non-uniformity of less than 0.9%. The good uniformity is due to the high uniformity of the electrical characteristics of SOI diodes made of single crystal silicon (Si). We have confirmed that the SOI diodes architecture is suitable for large format uncooled IR FPAs.

  4. A p-i-n junction diode based on locally doped carbon nanotube network

    Science.gov (United States)

    Liu, Xiaodong; Chen, Changxin; Wei, Liangming; Hu, Nantao; Song, Chuanjuan; Liao, Chenghao; He, Rong; Dong, Xusheng; Wang, Ying; Liu, Qinran; Zhang, Yafei

    2016-01-01

    A p-i-n junction diode constructed by the locally doped network of single-walled carbon nanotubes (SWNTs) was investigated. In this diode, the two opposite ends of the SWNT-network channel were selectively doped by triethyloxonium hexachloroantimonate (OA) and polyethylenimine (PEI) to obtain the air-stable p- and n-type SWNTs respectively while the central area of the SWNT-network remained intrinsic state, resulting in the formation of a p-i-n junction with a strong built-in electronic field in the SWNTs. The results showed that the forward current and the rectification ratio of the diode increased as the doping degree increased. The forward current of the device could also be increased by decreasing the channel length. A high-performance p-i-n junction diode with a high rectification ratio (~104), large forward current (~12.2 μA) and low reverse saturated current (~1.8 nA) was achieved with the OA and PEI doping time of 5 h and 18 h for a channel length of ~6 μm. PMID:26996610

  5. The evaluation of dose of TSEI with TLD and diode detector of the uterine cervix cancer

    Energy Technology Data Exchange (ETDEWEB)

    Je, Young Wan; Na, Keyung Su; Yoon, Il Kyu; Park, Heung Deuk [Dept. of Radiation Oncology, Seoul National University Hospital, Seoul (Korea, Republic of)

    2005-03-15

    To evaluate radiation dose and accuracy with TLD and diode detector when treat total skin with electron beam. Using Stanford Technique, we treated patient with Mycosis Fungoides. 6 MeV electron beam of LINAC was used and the SSD was 300 cm. Also, acrylic speller(0.8 cm) was used. The patient position was 6 types and the gantry angle was 64, 90 and 116 degree. The patient's skin dose and the output were detected 5 to 6 times with TLD and diode. The deviations of dose detected with TLD from tumor dose were CA + 6%, thigh + 8%, umbilicus + 4%, calf - 8%, vertex - 74.4%, deep axillae - 10.2%, anus and testis - 87%, sole - 86% and nails shielded with 4 mm lead + 4%. The deviations of dose detected with diode were - 4.5% {approx} + 5% at the patient center and - 1.1% {approx} + 1% at the speller. The deviation of total skin dose was + 8% {approx} - 8% and that deviation was within the acceptable range({+-}10%). The boost dose was irradiated for the low dose areas(vertex, anus, sole). The electron beam output detected at the sootier was stable. It is thought that the deviation of dose at patient center detected with diode was induced by detection point and patient position.

  6. Organic Light-Emitting Diodes Driven by Organic Transistors

    Institute of Scientific and Technical Information of China (English)

    胡远川; 董桂芳; 王立铎; 梁琰; 邱勇

    2004-01-01

    Organic thin-film field-effect transistors (OTFTs) with pentacene as the semiconductor have been fabricated for driving an organic light-emitting diode (OLED). The driving circuit includes two OTFTs and one storage capacitor. The field-effect mobility of the transistors in the driving circuit is more than 0.3 cm2/Vs, and the on/off ratio is larger than 104. The light-emission area of the OLED is 0. 04mm2 and the brightness is larger than 400cd/m2 when the selected line voltage, data line voltage and drive voltage all are -40 V. The responding characteristics and holding characteristics are also researched when the selected line voltage and the date line voltage are changed.

  7. A Pair of Light Emitting Diodes for Absorbance Measurement

    Energy Technology Data Exchange (ETDEWEB)

    Shin, Dongyong; Eom, Inyong [Catholic Univ. of Daegu, Gyeongsan (Korea, Republic of)

    2013-10-15

    Two same wavelength LEDs (i. e. an emitter LED and a detector LED, respectively) were successfully used to measure absorbance of BTB solution. A linear calibration with r-squared value of 0.9945 was achieved. 0.03 μM of LOD was observed with a noise level of 2 Χ 10{sup -4} absorbance unit. We are now examining relative sensitivities of different LEDs with distinct wavelength. In the future, building a spectrophotometer equipped with LEDs is quite interesting both in scientifically and pedagogically (i. e. undergraduate lab course). Light emitting diodes (LEDs) have a semiconductor chip (∼1 mm{sup 2} area) mounted on a concave mirror and emit narrow band of wavelengths when forward biased. LEDs have been widely used in many fields. Conventional light bulbs are being replaced by LED bulbs.

  8. Diode-coupled Ag nanoantennas for nanorectenna energy conversion

    Science.gov (United States)

    Osgood, Richard, III; Giardini, Stephen; Carlson, Joel; Fernandes, Gustavo E.; Kim, Jin Ho; Xu, Jimmy; Chin, Matthew; Nichols, Barbara; Dubey, Madan; Parilla, Philip; Berry, Joseph; Ginley, David; Periasamy, Prakash; Guthrey, Harvey; O'Hayre, Ryan; Buchwald, Walter

    2011-10-01

    Arrays of "nanorectennas" consist of diode-coupled nanoantennas with plasmonic resonances in the visible/near-infrared (vis/nir) regime, and are expected to convert vis/nir radiative power into useful direct current. We study plasmonic resonances in large format (~ 1 mm2 area) arrays, consisting of electron beam-patterned horizontal (e.g., parallel to the substrate) Ag lines patterned on ultrathin (afore-mentioned barrier layers and different metals for the ground plane, are experimentally characterized and compared to our conduction model. We observe ~ 1 mV signals from NiO-based nanorectenna arrays illuminated by 532 nm and 1064 nm laser pulses, and discuss the origin of these signals.

  9. Photovoltaic-module bypass-diode encapsulation. Annual report

    Energy Technology Data Exchange (ETDEWEB)

    1983-06-20

    The design and processing techniques necessary to incorporate bypass diodes within the module encapsulant are presented in this annual report. A comprehensive survey of available pad-mounted PN junction and Schottky diodes led to the selection of Semicon PN junction diode cells for this application. Diode junction-to-heat spreader thermal resistance measurements, performed on a variety of mounted diode chip types and sizes, have yielded values which are consistently below 1/sup 0/C per watt, but show some instability when thermally cycled over the temperature range from -40 to 150/sup 0/C. Based on the results of a detailed thermal analysis, which covered the range of bypass currents from 2 to 20 amperes, three representative experimental modules, each incorporating integral bypass diode/heat spreader assemblies of various sizes, were designed and fabricated. Thermal testing of these modules has enabled the formation of a recommended heat spreader plate sizing relationship. The production cost of three encapsulated bypass diode/heat spreader assemblies were compared with similarly rated externally-mounted packaged diodes. An assessment of bypass diode reliability, which relies heavily on rectifying diode failure rate data, leads to the general conclusion that, when proper designed and installed, these devices will improve the overall reliability of a terrestrial array over a 20 year design lifetime.

  10. Ultrasensitive, real-time trace gas detection using a high-power, multimode diode laser and cavity ringdown spectroscopy.

    Science.gov (United States)

    Karpf, Andreas; Qiao, Yuhao; Rao, Gottipaty N

    2016-06-01

    We present a simplified cavity ringdown (CRD) trace gas detection technique that is insensitive to vibration, and capable of extremely sensitive, real-time absorption measurements. A high-power, multimode Fabry-Perot (FP) diode laser with a broad wavelength range (Δλlaser∼0.6  nm) is used to excite a large number of cavity modes, thereby reducing the detector's susceptibility to vibration and making it well suited for field deployment. When detecting molecular species with broad absorption features (Δλabsorption≫Δλlaser), the laser's broad linewidth removes the need for precision wavelength stabilization. The laser's power and broad linewidth allow the use of on-axis cavity alignment, improving the signal-to-noise ratio while maintaining its vibration insensitivity. The use of an FP diode laser has the added advantages of being inexpensive, compact, and insensitive to vibration. The technique was demonstrated using a 1.1 W (λ=400  nm) diode laser to measure low concentrations of nitrogen dioxide (NO2) in zero air. A sensitivity of 38 parts in 1012 (ppt) was achieved using an integration time of 128 ms; for single-shot detection, 530 ppt sensitivity was demonstrated with a measurement time of 60 μs, which opens the door to sensitive measurements with extremely high temporal resolution; to the best of our knowledge, these are the highest speed measurements of NO2 concentration using CRD spectroscopy. The reduced susceptibility to vibration was demonstrated by introducing small vibrations into the apparatus and observing that there was no measurable effect on the sensitivity of detection.

  11. SU-E-P-34: Dose Perturbation Caused by Sun Nuclear QED Diode When Used for Very Small Electron Fields

    Energy Technology Data Exchange (ETDEWEB)

    Klash, S; Steinman, J [Radphys Oncology Services, LLC, Knoxville, TN (United States); Stanley, T [CCS Oncology Center, Kenmore, NY (United States)

    2015-06-15

    Purpose: Diodes are utilized by radiotherapy departments to help verify that treatment fields are being delivered correctly to the patient. Some treatment fields utilize electron beams along with a cerrobend cutout to shape the beam to the area to be treated. Cerrobend cutouts can sometimes be very small < 2×2-cm2. Some published work has addressed diode perturbation for cutout sizes down to 1.5-cm, this work addresses the diode perturbation of the Sun Nuclear QEDTM diode for cutouts as small as 0.5-cm in diameter. Methods: Measurements were taken with an A16 Exradin micro-chamber in Solid Water to 100-cm SSD. Dmax was determined for each cutout using various amounts of Solid Water in 1–2 mm increments to account for the dmax shifting in small fields. The diode was placed on top of the solid water to 100-cm SSD in the center of the cutout. Measurements were taken with no diode for comparison. The cutouts ranged in diameter from 0.5-cm to 5.0-cm and included the open 6×6 insert. Measurements were made for energies 6, 9, 12, 15,&18 MeV. Results: For 6 MeV, the percent dose reduction from the diode in the cutout field compared to the field without the diode ranged from 35% to 25% as a function of cutout size. For higher energies, this percentage decreased and generally was 25% to 15%. It was observed that dmax shifts significantly upstream for very small cutouts (<2-cm diameter) to less than 1 cm for all energies. Conclusion: The presence of diodes in small electron fields is enough to cause significant dose perturbation to the target volume. It is recommended that diodes for very small electron fields be used sparingly or possibly with a dose correction per treatment fraction(s), if the total projected delivered dose is going to be significantly different from that prescribed by the physician.

  12. SU-E-P-34: Dose Perturbation Caused by Sun Nuclear QED Diode When Used for Very Small Electron Fields

    International Nuclear Information System (INIS)

    Purpose: Diodes are utilized by radiotherapy departments to help verify that treatment fields are being delivered correctly to the patient. Some treatment fields utilize electron beams along with a cerrobend cutout to shape the beam to the area to be treated. Cerrobend cutouts can sometimes be very small < 2×2-cm2. Some published work has addressed diode perturbation for cutout sizes down to 1.5-cm, this work addresses the diode perturbation of the Sun Nuclear QEDTM diode for cutouts as small as 0.5-cm in diameter. Methods: Measurements were taken with an A16 Exradin micro-chamber in Solid Water to 100-cm SSD. Dmax was determined for each cutout using various amounts of Solid Water in 1–2 mm increments to account for the dmax shifting in small fields. The diode was placed on top of the solid water to 100-cm SSD in the center of the cutout. Measurements were taken with no diode for comparison. The cutouts ranged in diameter from 0.5-cm to 5.0-cm and included the open 6×6 insert. Measurements were made for energies 6, 9, 12, 15,&18 MeV. Results: For 6 MeV, the percent dose reduction from the diode in the cutout field compared to the field without the diode ranged from 35% to 25% as a function of cutout size. For higher energies, this percentage decreased and generally was 25% to 15%. It was observed that dmax shifts significantly upstream for very small cutouts (<2-cm diameter) to less than 1 cm for all energies. Conclusion: The presence of diodes in small electron fields is enough to cause significant dose perturbation to the target volume. It is recommended that diodes for very small electron fields be used sparingly or possibly with a dose correction per treatment fraction(s), if the total projected delivered dose is going to be significantly different from that prescribed by the physician

  13. Evaluation of laser diode based optical switches for optical processors

    Science.gov (United States)

    Swanson, Paul D.; Parker, Michael A.; Libby, Stuart I.

    1993-07-01

    Three optical switching elements have been designed, fabricated, and tested for use in an integrated, optical signal processor. The first, an optical NOR logic gate, uses gain quenching as a means of allowing one (or more) light beam(s) to control the output light. This technique, along with the use of a two pad bistable output laser, is used in demonstrating the feasibility of the second device, an all optical RS flip flop. The third device consists of a broad area orthogonal model switching laser, whose corollary outputs correspond to the sign of the voltage difference between its two high impedance electrical inputs. This device also has possible memory applications if bistable mode switching within the broad area laser can be achieved.

  14. Pulsed diode source of polarized ions

    International Nuclear Information System (INIS)

    The advantages of polarized nuclei for fusion reactors have recently been described. We propose a pulsed source of polarized nuclei that consists of an ion diode with a polarized anode. With magnetic resonance techniques the nuclear spins of the protons of solid NH3 can be made about 90 to 95% polarized. This material would be used for the anode. The diode would be pulsed with a voltage of 1-200K-volts for 1-2 μ sec. Flashover of the anode produces a surface plasma from which the polarized protons would be extracted to form a beam. Depolarization could be detected by comparing reaction cross sections and/or distribution of reaction products with similar results for unpolarized beams

  15. Non-linearity correction of Schottky diode THz detector system using CSR burst from storage ring

    International Nuclear Information System (INIS)

    We show a practical method to calibrate non-linearity of Schottky diode detector for the short-pulsed THz radiation from the electron storage ring. A frequency distribution of pulse area was measured at three distances of the detector from the radiation source. Non-linearity correction function was obtained by a condition that the three distribution should be the same with non-linearity correction and reduction factor by the distance. (author)

  16. Terahertz Optoelectronics with Surface Plasmon Polariton Diode

    OpenAIRE

    Vinnakota, Raj K.; Genov, Dentcho A

    2014-01-01

    The field of plasmonics has experience a renaissance in recent years by providing a large variety of new physical effects and applications. Surface plasmon polaritons, i.e. the collective electron oscillations at the interface of a metal/semiconductor and a dielectric, may bridge the gap between electronic and photonic devices, provided a fast switching mechanism is identified. Here, we demonstrate a surface plasmon-polariton diode (SPPD) an optoelectronic switch that can operate at exceeding...

  17. Diode having trenches in a semiconductor region

    Energy Technology Data Exchange (ETDEWEB)

    Palacios, Tomas Apostol; Lu, Bin; Matioli, Elison de Nazareth

    2016-03-22

    An electrode structure is described in which conductive regions are recessed into a semiconductor region. Trenches may be formed in a semiconductor region, such that conductive regions can be formed in the trenches. The electrode structure may be used in semiconductor devices such as field effect transistors or diodes. Nitride-based power semiconductor devices are described including such an electrode structure, which can reduce leakage current and otherwise improve performance.

  18. A Treatment of Amblyopia Using Laser Diodes

    Science.gov (United States)

    Wang, Di; Wang, Yi-Ding; Liu, Bing-Chun

    2000-04-01

    We propose the treatment of amblyopia using yellow-green laser diodes. There are amblyopia children in excess of fifty million in the world. Because the causative agent of amblyopia hasn't been well understood,only roughly considered to be concerned with visual sense cell, optic nerve network and function of nerve center, no appropriate treatment is found up to date. The vision of person is determined by the center hollow region of retina, where there are three kinds of cone cell. The corresponding peak wavelength in absorption spectrum locates 447nm (blue light), 532nm (green light) and 565nm (yellow light), respectively. When stimulated by white light, excited degree of three kinds of cone cell are identical,or yellow-green light, to which person eye is most sensitive, will significantly takes effects. Therefore the yellow-green laser diode is suitable for treating amblyopia. The weak laser, namely laser power less than mW order of magnitude, shows curative by stimulating bion tissue. When stimulating light power density is less than 0.001W/cm, the compounding speed of nucleic acid DNA is significantly increased. The growth rate of cell, activity of enzyme, content of hemoglobin and the growth of blood vessel, are all increased. However, it's key to control the dose of light. When the dose transcend some value, a inhibition will occur. The little dose of weak laser treatment can be accumulated with a parabolic characteristics, that is the weak laser generate bion response stengthening gradually versus time. Then it will weaken gradually after the peak. When the treatment duration is longer than a certain time, a inhibition also takes place. A suggested theraphy is characterized by little dose and short treatment course. In a conclusion, the yellow-green laser diode should be used for the treatment of amblyopia. The little dose and short treatment couse are to be adopted. Key words:treatment amblyopia laser diode

  19. Stability theory of Knudsen plasma diodes

    Energy Technology Data Exchange (ETDEWEB)

    Kuznetsov, V. I., E-mail: victor.kuznetsov@mail.ioffe.ru; Ender, A. Ya. [Ioffe Institute, Russian Academy of Sciences (Russian Federation)

    2015-11-15

    A stability theory is developed for a plasma diode in which an electron beam supplied from the emitter propagates without collisions in the self-consistent electric field against the immobile ion background. An integral equation for the amplitude of the perturbed field is deduced using the Q,G method for the regime without electron reflection from a potential barrier. Analytic solutions to this equation are obtained for a number of important particular cases, and the plasma dispersion properties are examined.

  20. Simulation of double barrier resonant tunneling diodes

    OpenAIRE

    Porter, Roy M.

    1996-01-01

    The double barrier resonant tunneling diode (DBRTD) is one of several devices currently being considered by the semiconductor industry as a replacement for conventional very large scale integrated (VLSI) circuit technology when the latter reaches its currently perceived scaling limits. The DBRTD was one of the first and remains one of the most promising devices to exhibit a room temperature negative differential resistance (NDR); this non-linear device characteristic has innovative circuit ap...

  1. Resonant tunneling diode with spin polarized injector

    OpenAIRE

    Slobodskyy, A.; Gould, C.; Slobodskyy, T.; Schmidt, G.; Molenkamp, L. W.; Sanchez, D

    2007-01-01

    We investigate the current-voltage characteristics of a II-VI semiconductor resonant-tunneling diode coupled to a diluted magnetic semiconductor injector. As a result of an external magnetic field, a giant Zeeman splitting develops in the injector, which modifies the band structure of the device, strongly affecting the transport properties. We find a large increase in peak amplitude accompanied by a shift of the resonance to higher voltages with increasing fields. We discuss a model which sho...

  2. Rugged, Tunable Extended-Cavity Diode Laser

    Science.gov (United States)

    Moore, Donald; Brinza, David; Seidel, David; Klipstein, William; Choi, Dong Ho; Le, Lam; Zhang, Guangzhi; Iniguez, Roberto; Tang, Wade

    2007-01-01

    A rugged, tunable extended-cavity diode laser (ECDL) has been developed to satisfy stringent requirements for frequency stability, notably including low sensitivity to vibration. This laser is designed specifically for use in an atomic-clock experiment to be performed aboard the International Space Station (ISS). Lasers of similar design would be suitable for use in terrestrial laboratories engaged in atomic-clock and atomic-physics research.

  3. Cross-field diode sputtering target assembly

    International Nuclear Information System (INIS)

    An improved cross-field diode sputtering target assembly adapted for sputtering a selected material having an ion target wherein a selected surface is formed of a selected material in a predetermined closed loop pattern having a central opening therein, and wherein the selected surface has spaced edges and is formed of a material adapted to be controllably eroded in a diode sputtering process, walls positioned contiguous or adjacent to each of the spaced edges of the selected surface wherein each of the walls extend substantially normal from and beyond each spaced edge of the selected surface of the ion target and a magnetic member having poles positioned in an opposed spaced relationship to each other and enclosing the walls and the ion target for providing a linear magnetic field through the walls, over the selected surface and through the ion target and wherein the magnetic member has a linear magnetic field of sufficient strength for plasma entrapment between the walls and over the selected surface wherein the selected surface is adapted to have an electric field applied thereacross at a direction substantially normal to the magnetic field to develop a BXE field and to entrap secondary electrons at the selected surface to control the erosion pattern thereof is shown. A method for utilizing the improved cross-field diode sputtering target assembly is also shown

  4. New laser materials for laser diode pumping

    Science.gov (United States)

    Jenssen, H. P.

    1990-01-01

    The potential advantages of laser diode pumped solid state lasers are many with high overall efficiency being the most important. In order to realize these advantages, the solid state laser material needs to be optimized for diode laser pumping and for the particular application. In the case of the Nd laser, materials with a longer upper level radiative lifetime are desirable. This is because the laser diode is fundamentally a cw source, and to obtain high energy storage, a long integration time is necessary. Fluoride crystals are investigated as host materials for the Nd laser and also for IR laser transitions in other rare earths, such as the 2 micron Ho laser and the 3 micron Er laser. The approach is to investigate both known crystals, such as BaY2F8, as well as new crystals such as NaYF8. Emphasis is on the growth and spectroscopy of BaY2F8. These two efforts are parallel efforts. The growth effort is aimed at establishing conditions for obtaining large, high quality boules for laser samples. This requires numerous experimental growth runs; however, from these runs, samples suitable for spectroscopy become available.

  5. Blue laser diode (LD) and light emitting diode (LED) applications

    Science.gov (United States)

    Bergh, Arpad A.

    2004-09-01

    The family of blue LEDs, edge emitting and surface emitting lasers, enable a number of applications. Blue lasers are used in digital applications such as optical storage in high density DVDs. The resolution of the spot size and hence the storage density is diffraction limited and is inversely proportional to the square of the wavelength of the laser. Other applications include printing, optical scanners, and high-resolution photo-lithography.As light emitters, blue LEDs are used for signaling and in direct view large area emissive displays. They are also making inroads into signage and LCD back-lighting, mobile platforms, and decorative accent lighting in curtains, furniture, etc.Blue LEDs produce white light either with phosphor wavelength converters or in combination with red and green LEDs. The full potential of LED light sources will require three devices to enable complete control over color and intensity.Sensing and medical/bio applications have a major impact on home security, on monitoring the environment, and on health care. New emerging diagnostic and therapeutic applications will improve the quality and reduce the cost of health care.

  6. Blue laser diode (LD) and light emitting diode (LED) applications

    International Nuclear Information System (INIS)

    The family of blue LEDs, edge emitting and surface emitting lasers, enable a number of applications. Blue lasers are used in digital applications such as optical storage in high density DVDs. The resolution of the spot size and hence the storage density is diffraction limited and is inversely proportional to the square of the wavelength of the laser. Other applications include printing, optical scanners, and high-resolution photo-lithography. As light emitters, blue LEDs are used for signaling and in direct view large area emissive displays. They are also making inroads into signage and LCD back-lighting, mobile platforms, and decorative accent lighting in curtains, furniture, etc. Blue LEDs produce white light either with phosphor wavelength converters or in combination with red and green LEDs. The full potential of LED light sources will require three devices to enable complete control over color and intensity. Sensing and medical/bio applications have a major impact on home security, on monitoring the environment, and on health care. New emerging diagnostic and therapeutic applications will improve the quality and reduce the cost of health care. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  7. HETEROJUNCTION DIODES OF POROUS SILICON WITH SOLUBLE POLYANILINE

    Institute of Scientific and Technical Information of China (English)

    Jun-hua Fan; Mei-xiang Wan; Dao-ben Zhu

    1999-01-01

    Two kinds of heterojunction diodes of porous silicon (PS) with soluble polyaniline (PANI) were fabricated. One is a heterojunction diode of PS with water-soluble copolymer of polyaniline(PAOABSA),Al/PS-PAOABSA/Au cell as rectifying diode. Another is a heterojunction diode of PS with soluble polyaniline doped with DBSA, Al/PS-PANI (DBSA)/Au cell as light emitting diode (LED). The rectifying characteristics of the rectifying diodes were measured as a function of the degree of sulfonation and thickness of the copolymers, as well as oxidation of PS. The rectifying ratio of the heterojunction can reach 5.0×104 at ±3 V bias. For the LED, the photoluminescence (PL) and electroluminescence (EL) spectra were measured and discussed.

  8. A novel diode laser system for photodynamic therapy

    DEFF Research Database (Denmark)

    Samsøe, E.; Andersen, P. E.; Petersen, P.;

    2001-01-01

    In this paper a novel diode laser system for photodynamic therapy is demonstrated. The system is based on linear spatial filtering and optical phase conjugate feedback from a photorefractive BaTiO3 crystal. The spatial coherence properties of the diode laser are significantly improved. The system...... provides an almost diffraction limited output which is efficiently coupled into a 50 mum core diameter fiber. The optical power transmitted through the fiber is increased by a factor of six when the feedback is applied to the diode laser. 85 percent of the power from the freely running laser diode...... is extracted in a high-quality beam and 80 percent of the output power is extracted through the fiber. The power transmitted through tile fiber scales linearly with the power of the laser diode. which means that a laser diode emitting 1.7 W multi-mode radiation would provide 1 W of optical power through a 50...

  9. Influence of 2 MeV electrons irradiation on gallium phosphide light-emitting diodes reverse currents

    International Nuclear Information System (INIS)

    Results of reverse electrophysical characteristics study of red and green LED's, initial and irradiated with 2 MeV electrons were given. It was found that reverse current was predominantly caused by carriers tunneling at Urev <- 9 V, and by the avalanche multiplication at Urev >- 13 V, in the range U = 9-13 V both mechanisms are available. Current increase at high voltage areas (Urev > 19 V) is limited by the base resistance of diode. In the case of significant reverse currents (I > 1 mA) irradiation of diodes leads to the shift of reverse current-voltage characteristics into the high voltages direction

  10. Silicon Diode Dose Response Correction in Small Photon Fields

    OpenAIRE

    Omar, Artur

    2010-01-01

    Silicon diodes compared to other types of dosimeters have several attractive properties, such as an excellent spatial resolution, a high sensitivity, and clinically practical to use. These properties make silicon diodes a preferred dosimeter for relative dosimetry for several types of measurements in small field dosimetry, e.g., stereotactic treatments and intensity modulated radiotherapy (IMRT). Silicon diodes are, however, limited by an energy dependent response variation in photon beams, r...

  11. A XOR Threshold Logic Implementation Through Resonant Tunneling Diode

    OpenAIRE

    Nitesh Kumar Dixit; Vinod Kumari

    2012-01-01

    Resonant tunneling diodes (RTDs) have functional versatility and high speed switching capability. The integration of resonant tunneling diodes and MOS transistor makes threshold gates and logics. The design and fabrication of linear threshold gates will be presented based on a mono stable bis table transition logic element. Each of its input terminals consist out of a resonant tunnelling diode merged with a transistor device. The circuit models of RTD and MOSFET are simulated in HSPICE. Two i...

  12. Theory of digital magneto resistance in ferromagnetic resonant tunneling diodes

    OpenAIRE

    Ertler, Christian; Fabian, Jaroslav

    2006-01-01

    We propose a ferromagnetic spintronic system, which consists of two serial connected resonant tunneling diodes. One diode is nonmagnetic whereas the other comprises a ferromagnetic emitter and quantum well. Using a selfconsistent coherent transport model we show that the current-voltage characteristic of the ferromagnetic diode can be strongly modulated by changing the relative orientation of the magnetizations in the emitter and quantum well, respectively. By a continuous change of the relat...

  13. Dose-rate dependence of epitaxial diodes response for gamma dosimetry

    Energy Technology Data Exchange (ETDEWEB)

    Goncalves, J.A.C.; Santos, T.C. dos; Barbosa, R.F.; Pascoalino, K.C.S.; Bueno, C.C. [Instituto de Pesquisas Energeticas e Nucleares (CTR/IPEN/CNEN-SP), Sao Paulo, SP (Brazil). Centro de Tecnologia das Radiacoes

    2011-07-01

    Full text: In this work, we present the preliminary results about the evaluation of dose-rate influence on the response of rad-hard epitaxial (EPI) diodes for on-line gamma-ray dosimetry using Co-60 irradiators. The diodes used were processed at University of Hamburg on n-type 75 micrometer thick epitaxial silicon layer (nominal resistivity of 69 Ohm.cm) grown on a highly doped n-type 300 micrometer thick Czochralski (Cz) silicon substrate. Two samples of EPI diodes were investigated: EPI-08 and EPI-10 - both non-irradiated previously. These devices, with 5mm x 5mm active area, were housed in a PMMA probe and connected, in a photovoltaic mode, to a Keithley 617 electrometer. The EPI-10 device irradiation was performed in the Radiation Technology Center at IPEN-CNEN/SP using a Co-60 irradiator (Gammacell 220 - Nordion) which delivers a dose rate of 2.16 kGy/h, while the EPI-08 device irradiation was performed in Nuclear Energy Department at UFPE/PE using the same model Co-60 irradiator, but with a dose-rate of 7.47 kGy/h. During the irradiation, the devices photocurrents were monitored as a function of the exposure time. The diodes were irradiated at room temperature. The dose-response curves of the EPI diodes were achieved through the integration of the current signals as a function of the exposure time. The normalized current signals as a function of the dose evidenced a decrease of about 60 percent from the initial current for the first 100 kGy dose received. After 500 kGy of exposure, the current signals stabilize (ou maintain stable). The dose-response curves behave as a second order polynomial fit, with correlation coefficients of about 0.99991 and 0.99995, respectively to EPI-10 and EPI-08 diodes. The preliminary results obtained evinced that the EPI diodes response are not dose-rate dependent within the range of 2.16 kGy/h up to 7.47 kGy/h. On the other hand, the devices studied are tolerant to radiation damages for total absorbed doses of approximately 550

  14. Underwater Chaotic Lidar using Blue Laser Diodes

    Science.gov (United States)

    Rumbaugh, Luke K.

    The thesis proposes and explores an underwater lidar system architecture based on chaotic modulation of recently introduced, commercially available, low cost blue laser diodes. This approach is experimentally shown to allow accurate underwater impulse response measurements while eliminating the need for several major components typically found in high-performance underwater lidar systems. The proposed approach is to: 1. Generate wideband, noise-like intensity modulation signals using optical chaotic modulation of blue-green laser diodes, and then 2. Use this signal source to develop an underwater chaotic lidar system that uses no electrical signal generator, no electro-optic modulator, no optical frequency doubler, and no large-aperture photodetector. The outcome of this thesis is the demonstration of a new underwater lidar system architecture that could allow high resolution ranging, imaging, and water profiling measurements in turbid water, at a reduced size, weight, power and cost relative to state-of-the-art high-performance underwater lidar sensors. This work also makes contributions to the state of the art in optics, nonlinear dynamics, and underwater sensing by demonstrating for the first time: 1. Wideband noise-like intensity modulation of a blue laser diode using no electrical signal generator or electro-optic modulator. Optical chaotic modulation of a 462 nm blue InGaN laser diode by self-feedback is explored for the first time. The usefulness of the signal to chaotic lidar is evaluated in terms of bandwidth, modulation depth, and autocorrelation peak-to-sidelobe-ratio (PSLR) using both computer and laboratory experiments. In laboratory experiments, the optical feedback technique is shown to be effective in generating wideband, noise-like chaotic signals with strong modulation depth when the diode is operated in an external-cavity dominated state. The modulation signal strength is shown to be limited by the onset of lasing within the diode's internal

  15. Dosimetric characteristics of a PIN diode for radiotherapy application.

    Science.gov (United States)

    Kumar, R; Sharma, S D; Philomina, A; Topkar, A

    2014-08-01

    The PIN diode developed by Bhabha Atomic Research Centre (BARC) was modified for its use as a dosimeter in radiation therapy. For this purpose the diode was mounted on a printed circuit board (PCB) and provided with necessary connections so that its response against irradiation can be recorded by a standard radiotherapy electrometer. The dosimetric characteristics of the diode were studied in Co-60 gamma rays as well as high energy X-rays. The measured sensitivity of this PIN diode is 4 nC/cGy which is about ten times higher than some commercial diode dosimeters. The leakage current from the diode is 0.04 nA. The response of the PIN diode is linear in the range of 20-1000 cGy which covers the full range of radiation dose encountered in radiotherapy treatments. The non-linearity of the diode response is 3.5% at 20 cGy and it is less than 1.5% at higher dose values. Its repeatability is within 0.5%. The angular response variation is about 5.6% within 6608 with respect to normal beam incidence. The response of the PIN diode at 6 and 18 MV X-rays varies within 2% with respect to its response at Co-60 gamma rays. The source to surface distance (SSD) dependence of the PIN diode was studied for Co-60 beam. It was found that the response of the diode decreases almost linearly relative to given dose for beams with constant collimator setting but increasing SSD (decreasing dose-rate). Within this study the diode response varied by about 2.5% between the maximum and minimum SSD. The dose-rate dependence of the PIN diode for 6 and 15 MV-rays was studied. The variation in response of diode for both energies in the studied dose range is less than 1%. The field size dependence of the PIN diode response is within 1% with respect to the response of ionisation chamber. These studies indicate that the characteristics of the PIN diode are suitable for use in radiotherapy dosimetry. PMID:24325130

  16. Plasma-filled diode based on the coaxial gun

    International Nuclear Information System (INIS)

    The paper presents the results of studies of a coaxial gun for a plasma-filled electron diode. Effects of the discharge channel diameter and gun current on characteristics of the plasma and pulse generated in the diode were investigated. The electron beam with maximum energy of ≥1 MeV at the current of ≈100 kA was obtained in the experiments with a plasma-filled diode. The energy of ≈5 kJ with the peak power of ≥100 GW dissipated in the diode.

  17. Plasma-filled diode based on the coaxial gun.

    Science.gov (United States)

    Zherlitsyn, A A; Kovalchuk, B M; Pedin, N N

    2012-10-01

    The paper presents the results of studies of a coaxial gun for a plasma-filled electron diode. Effects of the discharge channel diameter and gun current on characteristics of the plasma and pulse generated in the diode were investigated. The electron beam with maximum energy of ≥1 MeV at the current of ≈100 kA was obtained in the experiments with a plasma-filled diode. The energy of ≈5 kJ with the peak power of ≥100 GW dissipated in the diode.

  18. Plasma-filled diode based on the coaxial gun

    Energy Technology Data Exchange (ETDEWEB)

    Zherlitsyn, A. A.; Kovalchuk, B. M.; Pedin, N. N. [Institute of High Current Electronics, 2/3 Academichesky Avenue, 634055 Tomsk (Russian Federation)

    2012-10-15

    The paper presents the results of studies of a coaxial gun for a plasma-filled electron diode. Effects of the discharge channel diameter and gun current on characteristics of the plasma and pulse generated in the diode were investigated. The electron beam with maximum energy of {>=}1 MeV at the current of Almost-Equal-To 100 kA was obtained in the experiments with a plasma-filled diode. The energy of Almost-Equal-To 5 kJ with the peak power of {>=}100 GW dissipated in the diode.

  19. Plasma-filled diode based on the coaxial gun

    Science.gov (United States)

    Zherlitsyn, A. A.; Kovalchuk, B. M.; Pedin, N. N.

    2012-10-01

    The paper presents the results of studies of a coaxial gun for a plasma-filled electron diode. Effects of the discharge channel diameter and gun current on characteristics of the plasma and pulse generated in the diode were investigated. The electron beam with maximum energy of ≥1 MeV at the current of ≈100 kA was obtained in the experiments with a plasma-filled diode. The energy of ≈5 kJ with the peak power of ≥100 GW dissipated in the diode.

  20. Plasma-filled diode based on the coaxial gun.

    Science.gov (United States)

    Zherlitsyn, A A; Kovalchuk, B M; Pedin, N N

    2012-10-01

    The paper presents the results of studies of a coaxial gun for a plasma-filled electron diode. Effects of the discharge channel diameter and gun current on characteristics of the plasma and pulse generated in the diode were investigated. The electron beam with maximum energy of ≥1 MeV at the current of ≈100 kA was obtained in the experiments with a plasma-filled diode. The energy of ≈5 kJ with the peak power of ≥100 GW dissipated in the diode. PMID:23126788

  1. High stable power control of a laser diode

    Institute of Scientific and Technical Information of China (English)

    YANG Jiu-ru; LI Cheng; YE Hong-an; L(U) Guo-hui; JIA Shi-lou

    2006-01-01

    In this paper,the low and the high frequency noises of a laser diode have been analyzed. Based on the analysis a novel scheme that adapts analog and digital hybrid techniques is proposed to stabilize the output power of a laser diode. With the hybrid controller,the low and the high frequency noises of a laser diode are conspicuously reduced.By accurate calculation,the short-term stability of the output power of laser diode reaches ±0.55‰, and the long-term stability is ±0.7‰.

  2. Three-dimensional, tight focusing of intense pulsed light-ion beam by spherical plasma focus diode

    International Nuclear Information System (INIS)

    A new type of ion-beam diode, self-magnetically insulated, spherica plasma focus diode (SPFD), was developed. With the SPFD, three-dimensional focusing of an intense pulsed light-ion beam was obtained. Experiments and simulations were carried out to study the behavior of the SPFD. In the experiments, diagnostic results of the Rutherford scattering pinhole camera and the shadow-box showed that the ion beam was focused into a small cylindrical area with ∼ 0.5mm in diameter and ∼ 2.5 mm in length. The average ion-beam current density at the anode surface was found to be ∼ 2 kA/cm2. In the simulations, it was observed that most of the diode gap is well insulated by the self-magnetic field induced by the diode current. The electron sheath in the diode gap significantly enhances the ion flow from the anode. As a result, the ion current density is several times higher than the single-species space-charge limited value. (author)

  3. More Is Better: Selecting for Broad Host Range Bacteriophages

    Science.gov (United States)

    Ross, Alexa; Ward, Samantha; Hyman, Paul

    2016-01-01

    Bacteriophages are viruses that infect bacteria. In this perspective, we discuss several aspects of a characteristic feature of bacteriophages, their host range. Each phage has its own particular host range, the range of bacteria that it can infect. While some phages can only infect one or a few bacterial strains, other phages can infect many species or even bacteria from different genera. Different methods for determining host range may give different results, reflecting the multiple mechanisms bacteria have to resist phage infection and reflecting the different steps of infection each method depends on. This makes defining host range difficult. Another difficulty in describing host range arises from the inconsistent use of the words “narrow” and especially “broad” when describing the breadth of the host range. Nearly all bacteriophages have been isolated using a single host strain of bacteria. While this procedure is fairly standard, it may more likely produce narrow rather than broad host range phage. Our results and those of others suggest that using multiple host strains during isolation can more reliably produce broader host range phages. This challenges the common belief that most bacteriophages have a narrow host range. We highlight the implications of this for several areas that are affected by host range including horizontal gene transfer and phage therapy. PMID:27660623

  4. High-resolution Schottky CdTe diode for hard X-ray and gamma-ray astronomy

    Science.gov (United States)

    Takahashi, T.; Paul, B.; Hirose, K.; Matsumoto, C.; Ohno, R.; Ozaki, T.; Mori, K.; Tomita, Y.

    1999-10-01

    We report a significant improvement of the spectral properties of cadmium telluride (CdTe) detectors, fabricated in the form of a Schottky CdTe diode. With the use of high quality CdTe wafer, we formed a Schottky junction by evaporating indium on the Te-face and operated the detector as a diode. This allows us to apply much higher bias voltage than was possible with the previous CdTe detectors. A /2 mm/×2 mm detector of thickness 0.5 mm, when operated at a temperature of /5°C, shows leakage current of only 0.2 and 0.4 nA for an operating voltage of 400 and 800 V, respectively. We found that, at a high-electric field of several kV cm-1, the Schottky CdTe diode has very good energy resolution and stability, suitable for astronomical applications. The broad low-energy tail, often observed in CdTe detectors due to the low mobility and short lifetime of holes, was significantly reduced by the application of a higher bias voltage which improves the charge collection efficiency. We achieved very good FWHM energy resolution of /1.1% and /0.8% at energies 122 and 511 keV, respectively, without any rise time discrimination or pulse height correction electronics. For the detection of hard X-rays and gamma-rays above 100 keV, we have improved the detection efficiency by stacking a number of thin CdTe diodes. Using individual readout electronics for each layer, we obtained high detection efficiency without sacrificing the energy resolution. In this paper, we report the performance of the new CdTe diode and discuss its proposed applications in future hard X-ray and gamma-ray astronomy missions.

  5. High-resolution Schottky CdTe diode for hard X-ray and gamma-ray astronomy

    International Nuclear Information System (INIS)

    We report a significant improvement of the spectral properties of cadmium telluride (CdTe) detectors, fabricated in the form of a Schottky CdTe diode. With the use of high quality CdTe wafer, we formed a Schottky junction by evaporating indium on the Te-face and operated the detector as a diode. This allows us to apply much higher bias voltage than was possible with the previous CdTe detectors. A 2 mmx2 mm detector of thickness 0.5 mm, when operated at a temperature of 5 deg. C, shows leakage current of only 0.2 and 0.4 nA for an operating voltage of 400 and 800 V, respectively. We found that, at a high-electric field of several kV cm-1, the Schottky CdTe diode has very good energy resolution and stability, suitable for astronomical applications. The broad low-energy tail, often observed in CdTe detectors due to the low mobility and short lifetime of holes, was significantly reduced by the application of a higher bias voltage which improves the charge collection efficiency. We achieved very good FWHM energy resolution of 1.1% and 0.8% at energies 122 and 511 keV, respectively, without any rise time discrimination or pulse height correction electronics. For the detection of hard X-rays and gamma-rays above 100 keV, we have improved the detection efficiency by stacking a number of thin CdTe diodes. Using individual readout electronics for each layer, we obtained high detection efficiency without sacrificing the energy resolution. In this paper, we report the performance of the new CdTe diode and discuss its proposed applications in future hard X-ray and gamma-ray astronomy missions

  6. Position and mode dependent coupling of terahertz quantum cascade laser fields to an integrated diode

    Science.gov (United States)

    Dyer, Gregory C.; Nordquist, Christopher D.; Cich, Michael J.; Ribaudo, Troy; Grine, Albert D.; Fuller, Charles T.; Reno, John L.; Wanke, Michael C.

    2013-10-01

    A Schottky diode integrated into a terahertz quantum cascade laser waveguide couples directly to the internal laser fields. In a multimode laser, the diode response is correlated with both the instantaneous power and the coupling strength to the diode of each lasing mode. Measurements of the rectified response of diodes integrated in two quantum cascade laser cavities at different locations indicate that the relative diode position strongly influences the laser-diode coupling.

  7. Position and mode dependent coupling of terahertz quantum cascade laser fields to an integrated diode

    CERN Document Server

    Dyer, Gregory C; Cich, Michael J; Ribaudo, Troy; Grine, Albert D; Fuller, Charles T; Reno, John L; Wanke, Michael C

    2016-01-01

    A Schottky diode integrated into a terahertz quantum cascade laser waveguide couples directly to the internal laser fields. In a multimode laser, the diode response is correlated with both the instantaneous power and the coupling strength to the diode of each lasing mode. Measurements of the rectified response of diodes integrated in two quantum cascade laser cavities at different locations indicate that the relative diode position strongly influences the laser-diode coupling.

  8. Assessing Eli Broad's Assault on Public School System Leadership

    Science.gov (United States)

    English, Fenwick W.; Crowder, Zan

    2012-01-01

    Eli Broad's approach to reforming urban public education does not recognize his own self-interest in promoting changes within such educational systems, a classic problem of misrecognition. The Broad agenda is an assault on the notion of the mission of public education as a service instead of a for-profit enterprise concerned with making money for…

  9. Social Cognition, Social Skill, and the Broad Autism Phenotype

    Science.gov (United States)

    Sasson, Noah J.; Nowlin, Rachel B.; Pinkham, Amy E.

    2013-01-01

    Social-cognitive deficits differentiate parents with the "broad autism phenotype" from non-broad autism phenotype parents more robustly than other neuropsychological features of autism, suggesting that this domain may be particularly informative for identifying genetic and brain processes associated with the phenotype. The current study…

  10. Boot Camp for Education CEOs: The Broad Foundation Superintendents Academy

    Science.gov (United States)

    Jehlen, Alain

    2012-01-01

    The Broad Foundation Superintendents Academy is the most prominent and most controversial training institute for school chiefs. The Academy is the flagship program of the Eli and Edythe Broad Foundation, the smallest of a triumvirate of corporate foundations that are at the heart of the billionaire campaign to remake public education in the image…

  11. Anatomical features of pepper plants (Capsicum annuum L.) grown under red light-emitting diodes supplemented with blue or far-red light

    Science.gov (United States)

    Schuerger, A. C.; Brown, C. S.; Stryjewski, E. C.

    1997-01-01

    Pepper plants (Capsicum annuum L. cv., Hungarian Wax) were grown under metal halide (MH) lamps or light-emitting diode (LED) arrays with different spectra to determine the effects of light quality on plant anatomy of leaves and stems. One LED (660) array supplied 90% red light at 660 nm (25nm band-width at half-peak height) and 1% far-red light between 700-800nm. A second LED (660/735) array supplied 83% red light at 660nm and 17% far-red light at 735nm (25nm band-width at half-peak height). A third LED (660/blue) array supplied 98% red light at 660nm, 1% blue light between 350-550nm, and 1% far-red light between 700-800nm. Control plants were grown under broad spectrum metal halide lamps. Plants were gron at a mean photon flux (300-800nm) of 330 micromol m-2 s-1 under a 12 h day-night photoperiod. Significant anatomical changes in stem and leaf morphologies were observed in plants grown under the LED arrays compared to plants grown under the broad-spectrum MH lamp. Cross-sectional areas of pepper stems, thickness of secondary xylem, numbers of intraxylary phloem bundles in the periphery of stem pith tissues, leaf thickness, numbers of choloplasts per palisade mesophyll cell, and thickness of palisade and spongy mesophyll tissues were greatest in peppers grown under MH lamps, intermediate in plants grown under the 660/blue LED array, and lowest in peppers grown under the 660 or 660/735 LED arrays. Most anatomical features of pepper stems and leaves were similar among plants grown under 660 or 660/735 LED arrays. The effects of spectral quality on anatomical changes in stem and leaf tissues of peppers generally correlate to the amount of blue light present in the primary light source.

  12. Substrate-Free InGaN/GaN Nanowire Light-Emitting Diodes.

    Science.gov (United States)

    Neplokh, Vladimir; Messanvi, Agnes; Zhang, Hezhi; Julien, Francois H; Babichev, Andrey; Eymery, Joel; Durand, Christophe; Tchernycheva, Maria

    2015-12-01

    We report on the demonstration of substrate-free nanowire/polydimethylsiloxane (PDMS) membrane light-emitting diodes (LEDs). Metal-organic vapour-phase epitaxy (MOVPE)-grown InGaN/GaN core-shell nanowires were encapsulated into PDMS layer. After metal deposition to p-GaN, a thick PDMS cap layer was spin-coated and the membrane was manually peeled from the sapphire substrate, flipped upside down onto a steel holder, and transparent indium tin oxide (ITO) contact to n-GaN was deposited. The fabricated LEDs demonstrate rectifying diode characteristics. For the electroluminescence (EL) measurements, the samples were manually bonded using silver paint. The EL spectra measured at different applied voltages demonstrate a blue shift with the current increase. This shift is explained by the current injection into the InGaN areas of the active region with different average indium content.

  13. Deciduous teeth occlusal caries detection with 655-nm diode laser confirmed by surface scanning electron microscopy

    Science.gov (United States)

    Duarte, Danilo; Fonseca, Yara P. C.; Zanin, Fatima A. A.; Brugnera, Aldo, Jr.

    2000-03-01

    The morphological complexity of the occlusal surface of deciduous molar teeth is considered as a factor to increase vulnerability to caries lesion. Occlusal surface of these teeth shows sulcus, pits and fissures which allow retention of both micro-organisms and food debris which make them more susceptible to caries. In the last decades there was a significant reduction on caries of smooth surface but not on the occlusal surface where dentinal caries develops under fissures which are apparently caries-free under eye observation. This is known as a hidden caries. The occlusal surface of sound extracted deciduous molar teeth were examined using a 655 nm diode laser (DIAGNOdent - KaVo) in order to detect hidden caries. When there was indication of a hidden caries, the area was examined using SEM and confirm or not the diagnosis. The authors concludes that the diagnosis of caries using 655 diode laser is reliable and precise method.

  14. Thin-layer black phosphorous/GaAs heterojunction p-n diodes

    International Nuclear Information System (INIS)

    Owing to its high carrier mobility and thickness-tunable direct band gap, black phosphorous emerges as a promising component of optoelectronic devices. Here, we evaluate the device characteristics of p-n heterojunction diodes wherein thin black phosphorous layers are interfaced with an underlying, highly n-doped GaAs substrate. The p-n heterojunctions exhibit close-to-ideal diode behavior at low bias, while under illumination they display a photoresponse that is evenly distributed over the entire junction area, with an external quantum efficiency of up to 10% at zero bias. Moreover, the observed maximum open circuit voltage of 0.6 V is consistent with the band gap estimated for a black phosphorous sheet with a thickness on the order of 10 nm. Further analysis reveals that the device performance is limited by the structural quality of the black phosphorous surface

  15. Efficient organic light emitting-diodes (OLEDs)

    CERN Document Server

    Chang, Yi-Lu

    2015-01-01

    Following two decades of intense research globally, the organic light-emitting diode (OLED) has steadily emerged as the ultimate display technology of choice for the coming decades. Portable active matrix OLED displays have already become prevalent, and even large-sized ultra-high definition 4K TVs are being mass-produced. More exotic applications such as wearable displays have been commercialized recently. With the burgeoning success in displays, researchers are actively bringing the technology forward into the exciting solid-state lighting market. This book presents the knowledge needed for

  16. Advancements in flowing diode pumped alkali lasers

    Science.gov (United States)

    Pitz, Greg A.; Stalnaker, Donald M.; Guild, Eric M.; Oliker, Benjamin Q.; Moran, Paul J.; Townsend, Steven W.; Hostutler, David A.

    2016-03-01

    Multiple variants of the Diode Pumped Alkali Laser (DPAL) have recently been demonstrated at the Air Force Research Laboratory (AFRL). Highlights of this ongoing research effort include: a) a 571W rubidium (Rb) based Master Oscillator Power Amplifier (MOPA) with a gain (2α) of 0.48 cm-1, b) a rubidium-cesium (Cs) Multi-Alkali Multi-Line (MAML) laser that simultaneously lases at both 795 nm and 895 nm, and c) a 1.5 kW resonantly pumped potassium (K) DPAL with a slope efficiency of 50%. The common factor among these experiments is the use of a flowing alkali test bed.

  17. Wheat Under LED's (Light Emitting Diodes)

    Science.gov (United States)

    2004-01-01

    Astroculture is a suite of technologies used to produce and maintain a closed controlled environment for plant growth. The two most recent missions supported growth of potato, dwarf wheat, and mustard plants, and provided scientists with the first opportunity to conduct true plant research in space. Light emitting diodes have particular usefulness for plant growth lighting because they emit a much smaller amount of radiant heat than do conventional lighting sources and because they have potential of directing a higher percentage of the emitted light onto plants surfaces. Furthermore, the high output LED's have emissions in the 600-700 nm waveband, which is of highest efficiency for photosynthesis by plants.

  18. Wave guide optimization for homoepitaxial laser diodes

    Energy Technology Data Exchange (ETDEWEB)

    Figge, S.; Dennemarck, J.; Aschenbrenner, T.; Zargham, A.; Hommel, D. [Institute of Solid State Physics, University of Bremen, 28359 Bremen (Germany)

    2007-06-15

    GaN-based high power laser diodes in the violet spectral range are demanding for conductive substrates with a lower thermal resistance than the commonly used sapphire. The only feasible approach to this goal is homoepitaxy on GaN wafers produced from thick GaN layers grown by hydride vapour phase epitaxy. One drawback of GaN substrates is the high refractive index and therefore it acts as an parasitic wave guide. In this paper we discuss the optimization of the wave guide and the n-side cladding layer. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  19. InP-base resonant tunneling diodes

    Institute of Scientific and Technical Information of China (English)

    Han Chunlin; Chen Chen; Zou Penghui; Zhang Yang; Zeng Yiping; Xue Fangshi; Gao Jianfeng; Zhang Zheng; Geng Tao

    2009-01-01

    We have fabricated Ino.53Ga0.47As/AlAs/InP resonant tunneling diodes (RTDs) based on the air-bridge technology by using electron beam lithography processing. The epitaxial layers of the RTD were grown on semiinsulating (100) InP substrates by molecular beam epitaxy. RTDs with a peak current density of 24.6 kA/cm2 and a peak-to-valley current ratio of 8.6 at room temperature have been demonstrated.

  20. Piezoresistive properties of resonant tunneling diodes

    Institute of Scientific and Technical Information of China (English)

    MAO Haiyang; XIONG Jijun; ZHANG Wendong; XUE Chenyang; SANG Shengbo; BAO Aida

    2007-01-01

    A measurement system was designed and established to test the piezoresistive properties of resonant tunneling diodes(RTDs).The current-voltage characteristic shifts of RTD at different stress states were detected.The experimental results demonstrate that the piezoresistive sensitivity Of RTD is larger than 1×10-8 Pa-1.To accurately represent the piezoresistive properties of RtD.the current-voltage characteristic coherence of the same RTD was tested.According to the experimental results,the largest relative resistance shift of an RTD in the same measurement environment is less than 3%,of which 1%is caused by the testing apparatuses.

  1. InP-base resonant tunneling diodes

    International Nuclear Information System (INIS)

    We have fabricated In0.53Ga0.47As/AlAs/InP resonant tunneling diodes (RTDs) based on the air-bridge technology by using electron beam lithography processing. The epitaxial layers of the RTD were grown on semiinsulating (100) InP substrates by molecular beam epitaxy. RTDs with a peak current density of 24.6 kA/cm2 and a peak-to-valley current ratio of 8.6 at room temperature have been demonstrated.

  2. Resonant-tunnelling diodes for THz applications

    Science.gov (United States)

    Feiginov, Michael; Sydlo, Cezary; Cojocari, Oleg; Meissner, Peter

    2012-10-01

    We investigate experimentally resonant-tunnelling-diode (RTD) oscillators, which are based on RTDs with heavily doped collector. We demonstrate that such RTD oscillators can work at frequencies, which are far beyond the limitations imposed by resonant-state lifetime and relaxation time. Exploiting further such RTDs, we have achieved the record operating frequency of 1.1 THz and show that substantially higher frequencies should be also achievable with RTD oscillators. RTD oscillators are extremely compact (less than a square millimeter) room-temperature sources of coherent cw THz radiation. Such sources should enable plenty of real-world THz applications.

  3. Broadband External-Cavity Diode Laser

    Science.gov (United States)

    Pilgrim, Jeffrey S.

    2005-01-01

    A broadband external-cavity diode laser (ECDL) has been invented for use in spectroscopic surveys preparatory to optical detection of gases. Heretofore, commercially available ECDLs have been designed, in conjunction with sophisticated tuning assemblies, for narrow- band (and, typically, single-frequency) operation, as needed for high sensitivity and high spectral resolution in some gas-detection applications. However, for preparatory spectroscopic surveys, high sensitivity and narrow-band operation are not needed; in such cases, the present broadband ECDL offers a simpler, less-expensive, more-compact alternative to a commercial narrowband ECDL.

  4. Deep ultraviolet light-emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Hu, X.; Deng, J.; Zhang, J.P.; Lunev, A.; Bilenko, Y.; Katona, T.; Gaska, R. [Sensor Electronic Technology, Inc., 1195 Atlas Road, Columbia, SC 29209 (United States); Shur, M.S. [Department of Electrical Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180 (United States); Shatalov, M.; Khan, A. [Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208 (United States)

    2006-05-15

    We report on the development of AlGaN-based deep UV light emitting diodes (LEDs) with emission wavelengths from 254 to 340 nm, focusing on the improvement of 280 nm LEDs efficiency. Under optimal device structure the UV LEDs efficiency was found to strongly depend on the AlGaN material quality. Milliwatt-power level LEDs were demonstrated for the 254-340 nm spectral range, and for 280 nm LEDs powers reaching 2.5 mW was achieved at 20 mA DC. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  5. Amorphous oxide alloys as interfacial layers with broadly tunable electronic structures for organic photovoltaic cells.

    Science.gov (United States)

    Zhou, Nanjia; Kim, Myung-Gil; Loser, Stephen; Smith, Jeremy; Yoshida, Hiroyuki; Guo, Xugang; Song, Charles; Jin, Hosub; Chen, Zhihua; Yoon, Seok Min; Freeman, Arthur J; Chang, Robert P H; Facchetti, Antonio; Marks, Tobin J

    2015-06-30

    In diverse classes of organic optoelectronic devices, controlling charge injection, extraction, and blocking across organic semiconductor-inorganic electrode interfaces is crucial for enhancing quantum efficiency and output voltage. To this end, the strategy of inserting engineered interfacial layers (IFLs) between electrical contacts and organic semiconductors has significantly advanced organic light-emitting diode and organic thin film transistor performance. For organic photovoltaic (OPV) devices, an electronically flexible IFL design strategy to incrementally tune energy level matching between the inorganic electrode system and the organic photoactive components without varying the surface chemistry would permit OPV cells to adapt to ever-changing generations of photoactive materials. Here we report the implementation of chemically/environmentally robust, low-temperature solution-processed amorphous transparent semiconducting oxide alloys, In-Ga-O and Ga-Zn-Sn-O, as IFLs for inverted OPVs. Continuous variation of the IFL compositions tunes the conduction band minima over a broad range, affording optimized OPV power conversion efficiencies for multiple classes of organic active layer materials and establishing clear correlations between IFL/photoactive layer energetics and device performance.

  6. Broad-spectrum light versus blue light for phototherapy in neonatal hyperbilirubinemia: a randomized controlled trial.

    Science.gov (United States)

    Pratesi, Simone; Di Fabio, Sandra; Bresci, Cecilia; Di Natale, Cecilia; Bar, Shahar; Dani, Carlo

    2015-07-01

    Phototherapy is standard care for treatment of neonatal hyperbilirubinemia. Our aim was to compare the effectiveness of broad-spectrum light (BSL) to that of blue light emitting diodes (LED) phototherapy for the treatment of jaundiced late preterm and term infants. Infants with gestational age from 35(+0) to 41(+6) weeks of gestation and nonhemolytic hyperbilirubinemia were randomized to treatment with BSL phototherapy or blue LED phototherapy. A total of 20 infants were included in the blue LED phototherapy group and 20 in the BSL phototherapy group. The duration of phototherapy was lower in the BSL than in the blue LED phototherapy group (15.8 ± 4.9 vs. 20.6 ± 6.0 hours; p = 0.009), and infants in the former group had a lower probability (p = 0.015) of remaining in phototherapy than infants in the latter. We concluded that BSL phototherapy is more effective than blue LED phototherapy for the treatment of hyperbilirubinemia in late preterm and term infants. Our data suggest that these results are not due to the different irradiance of the two phototherapy systems, but probably depend on their different peak light emissions. PMID:25545446

  7. Simulation of broad spectral bandwidth emitters at 1060 nm for optical coherence tomography

    Science.gov (United States)

    Tooley, I. G.; Childs, D. T. D.; Stevens, B. J.; Groom, K. M.; Hogg, R. A.

    2016-03-01

    The simulation of broad spectral bandwidth light sources (semiconductor optical amplifiers (SOA) and superluminescent diodes (SLD)) for application in ophthalmic optical coherence tomography is reported. The device requirements and origin of key device parameters are outlined, and a range of single and double InGaAs/GaAs quantum well (QW) active elements are simulated with a view to application in different OCT embodiments. We confirm that utilising higher order optical transitions is beneficial for single QW SOAs, but may introduce deleterious spectral modulation in SLDs. We show how an addition QW may be introduced to eliminate this spectral modulation, but that this results in a reduction of the gain spectrum width. We go on to explore double QW structures where the roles of the two QWs are reversed, with the narrow QW providing long wavelength emission and gain. We show how this modification in the density of states results in a significant increase in gain-spectrum width for a given current.

  8. Operation of AC Adapters Visualized Using Light-Emitting Diodes

    Science.gov (United States)

    Regester, Jeffrey

    2016-01-01

    A bridge rectifier is a diamond-shaped configuration of diodes that serves to convert alternating current(AC) into direct current (DC). In our world of AC outlets and DC electronics, they are ubiquitous. Of course, most bridge rectifiers are built with regular diodes, not the light-emitting variety, because LEDs have a number of disadvantages. For…

  9. IMPATT diodes. Citations from the NTIS data base

    Science.gov (United States)

    Reed, W. E.

    1980-04-01

    Government sponsored research reports are cited covering the design, characterization, and applications of IMPATT diodes. Topics include reliability, power handling, properties, noise, fabrication, and radiation effects. The use of silicon and gallium arsenide IMPATT diodes for microwave generation and amplification is included. This updated bibliography contains 182 abstracts, 14 of which are new entries to the previous edition.

  10. Transistor biased amplifier minimizes diode discriminator threshold attenuation

    Science.gov (United States)

    Larsen, R. N.

    1967-01-01

    Transistor biased amplifier has a biased diode discriminator driven by a high impedance /several megohms/ current source, rather than a voltage source with several hundred ohms output impedance. This high impedance input arrangement makes the incremental impedance of the threshold diode negligible relative to the input impedance.

  11. Integral bypass diodes in an amorphous silicon alloy photovoltaic module

    Science.gov (United States)

    Hanak, J. J.; Flaisher, H.

    1991-01-01

    Thin-film, tandem-junction, amorphous silicon (a-Si) photovoltaic modules were constructed in which a part of the a-Si alloy cell material is used to form bypass protection diodes. This integral design circumvents the need for incorporating external, conventional diodes, thus simplifying the manufacturing process and reducing module weight.

  12. Compact green-diode-based lasers for biophotonic bioimaging

    DEFF Research Database (Denmark)

    Jensen, Ole Bjarlin; Hansen, Anders Kragh; Petersen, Paul Michael;

    2014-01-01

    Diode lasers simultaneously offer tunability, high-power emission, and compact size at fairly low cost and are increasingly preferred for pumping titanium:sapphire lasers.......Diode lasers simultaneously offer tunability, high-power emission, and compact size at fairly low cost and are increasingly preferred for pumping titanium:sapphire lasers....

  13. Suitability of integrated protection diodes from diverse semiconductor technologies

    NARCIS (Netherlands)

    Wanum, M. van; Lebouille, T.T.N.; Visser, G.C.; Vliet, F.E. van

    2009-01-01

    In this article diodes from three different semiconductor technologies are compared based on their suitability to protect a receiver. The semiconductor materials involved are Silicon, Gallium Arsenide and Gallium Nitride. The diodes in the diverse semiconductor technologies themselves are close in p

  14. Low-inductance, dual-feed diode development

    International Nuclear Information System (INIS)

    We have tested three low-inductance, sub-ohm impedance diode configurations on the SNLA SPEED pulse generator at power levels above 1 TW. SPEED is a single module, approx. = 20 nsec FWHM accelerator with a .4 ohm triaxial power flow transmission line in the water section and a double-sided vacuum-water insulator at a radius of 53 cm. In these experiments, the dual feed was continued with a triplate disk arrangement down to a diode radius of 4 cm, resulting in a load inductance of 5 nH. The diodes were configured to operate in a Langmuir-Childe's bipolar mode, a paravector potential mode, and a double pinched beam mode. We observed pulses with V = 900 kV, I = 1.5 MA, and pulse width = 19 nsec FWHM at the diode. Diode impedance was governed by plasma gap closure; closure velocities of approx. 7 cm/μsec can be inferred from the data. In addition, a 4 nsec difference in the arrival time of the waves at the diode from the two feed lines was found to significantly perturb the expected diode performance. Diode performance improved markedly when the two feed lines were isolated from each other

  15. Simple tunnel diode circuit for accurate zero crossing timing

    Science.gov (United States)

    Metz, A. J.

    1969-01-01

    Tunnel diode circuit, capable of timing the zero crossing point of bipolar pulses, provides effective design for a fast crossing detector. It combines a nonlinear load line with the diode to detect the zero crossing of a wide range of input waveshapes.

  16. Spectral control of diode lasers using external waveguide circuits

    NARCIS (Netherlands)

    Oldenbeuving, R.M.

    2013-01-01

    We investigated spectral control of diode lasers using external waveguide circuits. The purpose of this work is to investigate such external control for providing a new class of diode lasers with technologically interesting properties, such as a narrow spectral bandwidth and spectrally tunable outpu

  17. Patterning of flexible organic light emitting diode (FOLED) stack using an ultrafast laser.

    Science.gov (United States)

    Mandamparambil, Rajesh; Fledderus, Henri; Van Steenberge, Geert; Dietzel, Andreas

    2010-04-12

    A femtosecond laser has been successfully utilized for patterning thin Flexible Organic Light Emitting Diode (FOLED) structures of individual layer thickness around 100nm. The authors report in this paper a step-like ablation behavior at the layer interfaces which accounts for a local removal of entire layers. Various surface analyzing techniques are used to investigate the morphologies and chemical compositions within and in the vicinity of the ablation areas. This study opens a new avenue in selectively ablating different layers from a multilayer stack on flexible substrates using fs lasers allowing post deposition structuring of large area flexible organic electronic devices.

  18. Large white organic light-emitting diode lighting panel on metal foils

    OpenAIRE

    Guaino, Philippe; Mazeri, Fabrizo; Hofmann, Michael; Birnstock, Jan; Avril, Ludovic; Viville, Pascal; Kanaan, Hani; Lazzaroni, Roberto; Loicq, Jerôme; Rotheudt, Frank; Pans, Christian

    2011-01-01

    Large-area top-emitting PIN structure (highly p- and n- type doped transport layers for electrons and holes and an undoped emitter layer)–organic light-emitting diode (OLED) on advanced metal foils were fabricated for lighting applications. ArcelorMittal has developed a new surface treatment on metal foils, suitable for roll-to-roll production and dedicated to large-area device integration. Both monochromatic and white devices are realized on advanced metal foils. Power efficiencies at 1000 c...

  19. High-efficiency and low-jitter Silicon single-photon avalanche diodes based on nanophotonic absorption enhancement

    CERN Document Server

    Ma, Jian; Yu, Zongfu; Jiang, Xiao; Huo, Yijie; Zang, Kai; Zhang, Jun; Harris, James S; Jin, Ge; Zhang, Qiang; Pan, Jian-Wei

    2015-01-01

    Silicon single-photon avalanche diode (SPAD) is a core device for single-photon detection in the visible and the near-infrared range, and widely used in many applications. However, due to limits of the structure design and device fabrication for current silicon SPADs, the key parameters of detection befficiency and timing jitter are often forced to compromise. Here, we propose a nanostructured silicon SPAD, which achieves high detection efficiency with excellent timing jitter simultaneously over a broad spectral range. The optical and electric simulations show significant performance enhancement compared with conventional silicon SPAD devices. This nanostructured devices can be easily fabricated and thus well suited for practical applications.

  20. Graded tensile-strained bulk InGaAs/InP superluminescent diode with very wide emission spectrum

    Institute of Scientific and Technical Information of China (English)

    Shurong Wang(王书荣); Wei Wang(王圩); Hongliang Zhu(朱洪亮); Zhihong Liu(刘志宏); Ruiving Zhang(张瑞英); Ying Ding(丁颖); Lingjuan Zhao(赵玲娟); Fan Zhou(周帆); Jing Bian(边静); Lufeng Wang(王鲁峰)

    2004-01-01

    A kind of novel broad-band superluminescent diodes (SLDs) using graded tensile-strained bulk InGaAs is developed. The graded tensile-strained bulk InGaAs is obtained by changing only group-Ⅲ trimethylgallium source flow during low-pressure metal organic vapor-phase epitaxy. At the injection current of 200mA, the fabricated SLDs with such structure demonstrate full-width at half-maximum spectral width of 106 nm and the output light power of 13.6 mW, respectively.

  1. Future Solid State Lighting using LEDs and Diode Lasers

    DEFF Research Database (Denmark)

    Petersen, Paul Michael

    2014-01-01

    significant savings. Solid state lighting (SSL) based on LEDs is today the most efficient light source for generation of high quality white light. Diode lasers, however, have the potential of being more efficient than LEDs for the generation of white light. A major advantage using diode lasers for solid state...... lighting is that the high efficiency can be obtained at high light lumen levels in a single element emitter and thus less light sources are required to achieve a desired light level. Furthermore, the high directionality of the generated light from laser diodes increases the energy savings in many...... applications. Within the coming years, it is expected that the efficiency of blue laser diodes will approach the efficiency of infrared diode lasers. This will enable high efficiency white light generation with very high lumen per watt values. SSL today is mainly based on phosphor converted blue light emitting...

  2. High-power green diode laser systems for biomedical applications

    DEFF Research Database (Denmark)

    Müller, André

    Due to their unique characteristics, diode lasers are increasingly attractive for numerous applications. For example, in the biomedical field the provided output power, spatial quality, and wavelength coverage of diode lasers has enabled their applications in, e.g., dermatology, diffuse...... spectroscopy and imaging, and fluorescence measurements. A major challenge in diode laser technology is to obtain high-power laser emission at wavelengths lasers...... in conjunction with optical coherence tomography, two-photon microscopy or coherent anti-Stokes Raman scattering microscopy. In order to provide high-power green diode laser emission, nonlinear frequency conversion of state-of-the-art near-infrared diode lasers represents a necessary means. However, the obtained...

  3. Fiber Optic Coupling of CW Linear Laser Diode Array

    Institute of Scientific and Technical Information of China (English)

    WANG Xiaowei; XIAO Jianwei; MA Xiaoyu; WANG Zhongming; FANG Gaozhan

    2002-01-01

    Based on a set of microoptics the output radiation from a continuous wave (CW) linear laser diode array is coupled into a multi-mode optical fiber of 400 μm diameter.The CW linear laser diode array is a 1 cm laser diode bar with 19 stripes with 100 μm aperture spaced on 500 μm centers.The coupling system contains packaged laser diode bar,fast axis collimator,slow axis collimation array,beam transformation system and focusing system.The high brightness,high power density and single fiber output of a laser diode bar is achieved.The coupling efficiency is 65% and the power density is up to 1.03×104 W/cm2.

  4. Ultra-broad bandwidth parametric amplification at degeneracy.

    Science.gov (United States)

    Limpert, J; Aguergaray, C; Montant, S; Manek-Hönninger, I; Petit, S; Descamps, D; Cormier, E; Salin, F

    2005-09-19

    We report on a novel approach of ultra-broad bandwidth parametric amplification around degeneracy. A bandwidth of up to 400 nm centered around 800 nm is amplified in a BBO crystal by using chirped pump pulses with a bandwitdth as broad as 10 nm. A supercontinuum signal is generated in a microstructured fiber, having to first order a quadratic chirp, which is necessary to ensure temporal overlap of the interacting waves over this broad bandwidth. Furthermore, we discuss the potential of this approach for an octave-spanning parametric amplification.

  5. Broad Ligament Pregnancy - Success Story of a Laparoscopically Managed Case.

    Science.gov (United States)

    Nayar, Jayashree; Nair, Sobha S

    2016-07-01

    Abdominal pregnancies constitute 1% of ectopic pregnancies, among which broad ligament pregnancy is a rare form. The maternal mortality rate has been reported to be as high as 20%. The diagnosis is seldom established before surgery. Laparoscopic management of broad ligament ectopic pregnancy is the ideal form of treatment in appropriately selected patients. We present the case report of successful laparoscopic treatment of a 3x3.5cm broad ligament pregnancy. A search of literature shows that ours is the 6(th) case report of such a rare ectopic pregnancy managed endoscopically successfully. PMID:27630914

  6. Ultra-broad bandwidth parametric amplification at degeneracy.

    Science.gov (United States)

    Limpert, J; Aguergaray, C; Montant, S; Manek-Hönninger, I; Petit, S; Descamps, D; Cormier, E; Salin, F

    2005-09-19

    We report on a novel approach of ultra-broad bandwidth parametric amplification around degeneracy. A bandwidth of up to 400 nm centered around 800 nm is amplified in a BBO crystal by using chirped pump pulses with a bandwitdth as broad as 10 nm. A supercontinuum signal is generated in a microstructured fiber, having to first order a quadratic chirp, which is necessary to ensure temporal overlap of the interacting waves over this broad bandwidth. Furthermore, we discuss the potential of this approach for an octave-spanning parametric amplification. PMID:19498762

  7. Discharge ratio of the broad-crested weir flowin the low head area КОЭФФИЦИЕНТ РАСХОДА ВОДОСЛИВА С ШИРОКИМ ПОРОГОМВ ОБЛАСТИ МАЛЫХ НАПОРОВ

    OpenAIRE

    Medzveliya Manana Levanovna; Pipiya Valeriy Valerianovich

    2013-01-01

    The authors consider the influence of the Reynolds number on the discharge ratio of the broad-crested weir. The authors provide an overview of their experiment in thearticle. They provide the equation that takes account of each factor of influence, including H — pressure over the broad-crested weir, P — weir height above the bottom, v — liquid velocity, ρ — liquid density, μ — dynamic viscosity, g — superficial tension, σ — gravity acceleration, q — per-unit weir flow, B — width of the weir, ...

  8. Sensitivity of resonant tunneling diode photodetectors

    Science.gov (United States)

    Pfenning, Andreas; Hartmann, Fabian; Langer, Fabian; Kamp, Martin; Höfling, Sven; Worschech, Lukas

    2016-09-01

    We have studied the sensitivity of AlGaAs/GaAs double barrier resonant tunneling diode photodetectors with an integrated GaInNAs absorption layer for light sensing at the telecommunication wavelength of λ = 1.3 μm for illumination powers from pico- to microwatts. The sensitivity decreases nonlinearly with power. An illumination power increase of seven orders of magnitude leads to a reduction of the photocurrent sensitivity from S I = 5.82 × 103 A W-1 to 3.2 A W-1. We attribute the nonlinear sensitivity-power dependence to an altered local electrostatic potential due to hole-accumulation that on the one hand tunes the tunneling current, but on the other hand affects the lifetime of photogenerated holes. In particular, the lifetime decreases exponentially with increasing hole population. The lifetime reduction results from an enhanced electrical field, a rise of the quasi-Fermi level, and an increased energy splitting within the triangular potential well. The non-constant sensitivity is a direct result of the non-constant lifetime. Based on these findings, we provide an expression that allows us to calculate the sensitivity as a function of illumination power and bias voltage, show a way to model the time-resolved photocurrent, and determine the critical power up to which the resonant tunneling diode photodetector sensitivity can be assumed constant.

  9. Processes governing pinch formation in diodes

    International Nuclear Information System (INIS)

    The process of pinch formation in large aspect ratio diodes has been studied by means of streak photography and time-resolved x-ray detectors. A tight pinch is formed at the anode center by a collapsing thin hollow electron beam. The collapse velocity depends, among other things, on the type of material in the top 1 μm layer of the anode. In a tentative model it is assumed that an anode plasma is at least partially created from gases released from the surface layer of the anode by the heating action of the beam. These gases are ionized by primary, backscattered, and secondary electrons. Ions emitted from this plasma modify the electron trajectories in the diode leading to a radial collapse of the hollow electron beam. The observed monotonic dependence of the collapse velocity on the atomic number of the anode material can be explained by the smooth dependence on Z of both the specific heat and the electron backscatter coefficient. In the case of high-Z anodes the ion expansion time appears to be the factor limiting the collapse velocity. Detailed experimental data are presented

  10. Diode and Final Focus Simulations for DARHT

    Science.gov (United States)

    Hughes, Thomas P.; Welch, Dale R.; Carlson, Randolph L.

    1997-05-01

    We have used the numerical simulation codes uc(ivory,) uc(iprop) and uc(pbguns) to simulate beam dynamics in the diode and final focus of the 4 kA, 20 MV DARHT linear accelerator. A low emittance 4 MV, 4 kA source for a 4-pulse injector was designed using uc(ivory) and uc(pbguns.) Due to the long pulse length (four 70 ns pulses over 1 μsec), we have kept the field stress to stacks. The normalized edge emittance produced by the diode optics is only ≈ 130 mm-mrad. In the final-focus region, we have used uc(iprop) to model the effect of ion emission from the target. The intense electric field of the beam at the 1 mm diameter focal spot produces substantial ion velocities, and, if the space-charge-limited current density can be supplied, significant focal spot degradation may occur due to ion space-charge. Calculations for the ITS test stand, which has a larger focal spot, show that the effect should be observable for H^+ and C^+ ion species. The effect may be lessened if there is insufficient ion density on the target to supply the space-charge-limited current density, or if the ion charge-to-mass ratio is sufficiently large.

  11. Electron beam diodes using ferroelectric cathodes

    International Nuclear Information System (INIS)

    A new high current density electron source is investigated. The source consists of a polarized ceramic disk with aluminum electrodes coated on both faces. The front electrode is etched in a periodic grid to expose the ceramic beneath. A rapid change in the polarization state of the ceramic results in the emission of a high density electron cloud into a 1 to 10mm diode gap. The anode potential is maintained by a charged transmission line. Some of the emitted electrons traverse the gap and an electron current flows. The emitted electron current has been measured as a function of the gap spacing and the anode potential. Current densities in excess of 70 A/cm2 have been measured. The current is found to vary linearly with the anode voltage for gaps < 10 mm, and exceeds the Child-Langmuir current by at least two orders of magnitude. The experimental data will be compared with predictions from a model based on the emission of a cloud of electrons from the ferroelectric which in turn reflex in the diode gap

  12. Wavelength control of visible light laser diodes

    Science.gov (United States)

    Goto, N.; Fujii, T.; Nemoto, K.; Suzuki, H.; Nakagawa, K.; Otsu, M.

    1990-04-01

    Wavelength control of visible light laser diodes was studied. By combining an interferometer and a diffraction grating, it became possible to control the wavelength of continuous oscillation in the range of 664 to 673nm, the frequency fine control range being 2GHz. And the spectral linewidth was narrowed to about 44kHz (10 exp minus 7 nm). With the use of a collimator lens, the beam expansion was narrowed to 2mrad. It was confirmed that the pulse output of continuous oscillation visible light laser diodes can be amplified by the YAG laser excitation dye laser. In the case of pulse oscillation, oscillation of 1GHz spectral width was obtained at the wavelength of 0.8 micro m by using an injection synchronization method. In the injection synchronization method, other laser beam is injected in an oscillator and a superior laser beam of synchronized components alone is obtained. As the wavelength control method is now stabilized and satisfies the conditions of narrow band, it has the prospect to be applied to the laser uranium enrichment technology.

  13. Studies on 405nm blue-violet diode laser with external grating cavity

    Science.gov (United States)

    Li, Bin; Gao, Jun; Zhao, Jun; Yu, Anlan; Luo, Shiwen; Xiong, Dongsheng; Wang, Xinbing; Zuo, Duluo

    2016-03-01

    Spectroscopy applications of free-running laser diodes (LD) are greatly restricted as its broad band spectral emission. And the power of a single blue-violet LD is around several hundred milliwatts by far, it is of great importance to obtain stable and narrow line-width laser diodes with high efficiency. In this paper, a high efficiency external cavity diode laser (ECDL) with high output power and narrow band emission at 405 nm is presented. The ECDL is based on a commercially available LD with nominal output power of 110 mW at an injection current of 100 mA. The spectral width of the free-running LD is about 1 nm (FWHM). A reflective holographic grating which is installed on a home-made compact adjustable stage is utilized for optical feedback in Littrow configuration. In this configuration, narrow line-width operation is realized and the effects of grating groove density as well as the groove direction related to the beam polarization on the performances of the ECDL are experimentally investigated. In the case of grating with groove density of 3600 g/mm, the threshold is reduced from 21 mA to 18.3 mA or 15.6 mA and the tuning range is 3.95 nm or 6.01 nm respectively when the grating is orientated in TE or TM polarization. In addition, an output beam with a line-width of 30 pm and output power of 92.7 mW is achieved in TE polarization. With these narrow line-width and high efficiency, the ECDL is capable to serve as a light source for spectroscopy application such as Raman scattering and laser induced fluorescence.

  14. Wavelength optimization using available laser diodes in spectral near-infrared optical tomography.

    Science.gov (United States)

    Chen, Liang-Yu; Pan, Min-Cheng; Yan, Chung-Chen; Pan, Min-Chun

    2016-07-20

    For employing optimized wavelengths, a near-infrared (NIR) tomographic imaging system with multiwavelengths in a continuous wave (CW) enables us to provide accurate information of chromophores. In this paper, we discuss wavelength optimization with a selection from commercial laser diodes. Through theoretical analysis, the residual norm (R) and the condition number (κ) represent the uniqueness of a matrix problem and the smooth singular-value distribution of each chromophore, respectively. The optimum wavelengths take place for large R and small κ. We considered a total of 38 wavelengths of laser diodes in the range of 633-980 nm commercially available to discover optimum sets for a broad range of chromophore combinations. In the 38 wavelengths, there exists 501,942 (C538), 2,760,681 (C638), and 12,620,256 (C738) combinations of five, six, and seven wavelength sets, respectively, for accurately estimating chromophores (HbO2, HbR, H2O, and lipids), water, lipids, and the scattering prefactor A. With the numerical calculation, the top 10 wavelength sets were selected based on the principle of large R and small κ. In the study, the chromophore concentration for young and elderly women are investigated; finally, choosing the laser diodes with a wavelength of 650, 690, 705, 730, 870/880, 915, and 937 nm is recommended either for young or elderly women to construct a spectral NIR tomographic imaging system in the CW domain. Simulated data were used to validate the claims. PMID:27463930

  15. Wavelength optimization using available laser diodes in spectral near-infrared optical tomography.

    Science.gov (United States)

    Chen, Liang-Yu; Pan, Min-Cheng; Yan, Chung-Chen; Pan, Min-Chun

    2016-07-20

    For employing optimized wavelengths, a near-infrared (NIR) tomographic imaging system with multiwavelengths in a continuous wave (CW) enables us to provide accurate information of chromophores. In this paper, we discuss wavelength optimization with a selection from commercial laser diodes. Through theoretical analysis, the residual norm (R) and the condition number (κ) represent the uniqueness of a matrix problem and the smooth singular-value distribution of each chromophore, respectively. The optimum wavelengths take place for large R and small κ. We considered a total of 38 wavelengths of laser diodes in the range of 633-980 nm commercially available to discover optimum sets for a broad range of chromophore combinations. In the 38 wavelengths, there exists 501,942 (C538), 2,760,681 (C638), and 12,620,256 (C738) combinations of five, six, and seven wavelength sets, respectively, for accurately estimating chromophores (HbO2, HbR, H2O, and lipids), water, lipids, and the scattering prefactor A. With the numerical calculation, the top 10 wavelength sets were selected based on the principle of large R and small κ. In the study, the chromophore concentration for young and elderly women are investigated; finally, choosing the laser diodes with a wavelength of 650, 690, 705, 730, 870/880, 915, and 937 nm is recommended either for young or elderly women to construct a spectral NIR tomographic imaging system in the CW domain. Simulated data were used to validate the claims.

  16. A study of signal generation and charge collection in a-Si:H diodes for radiation imaging

    International Nuclear Information System (INIS)

    Its high radiation resistivity and large-area capability are the expected advantages of this material together with its ability to provide a front-end readout electronics in the vicinity of the sensor element. Electrons and holes created by incoming charged particles, X-rays, γ rays, are drifted by the electric field inside a-Si:H diodes and this carrier movement induces signal charges on electrodes. Charge collection and signal generation process are analyzed in terms of carrier mobilities, lifetimes and electric field. Charge collection in thick a-Si:H diodes is often limited by deep-level trapping of carriers during transit and a finite charge integration time required for single particle counting in some applications and sometimes by volume recombination of carriers for detecting heavily-ionizing particles such as α particles. The charge collection process is also strongly affected by the non-uniform electric field profiles in a-Si:H diodes caused by the fixed space charges inside the material under reverse-bias. Signal generation due to a weak light pulse irradiating each end of a thick diode is measured as a function of a reverse-bias and it gives a valuable information about the fixed space charges. Field profiles can be manipulated by either doping, electrode geometry, or combination of both to improve the charge collection process. One can apply a higher reverse-bias on a diode with an equivalent thickness by providing buffer layers at each end of the diode and thus suppressing soft breakdown phenomena. X-ray detection with a good sensitivity is demonstrated by an a-Si:H photodiode coupled to an evaporated CsI scintillator. The scintillation quality of evaporated CsI layers can be made almost identical to its single crystal counterpart. Fields of a-Si:H radiation detector application include high energy physics, medical imaging, materials science and life science. 78 refs., 68 figs., 11 tabs

  17. 混合PiN/Schottky二极管的研究%Study of merged PiN/Schottky diode(MPS)

    Institute of Scientific and Technical Information of China (English)

    关艳霞; 李银娜

    2014-01-01

    The main purpose of this paper is to study the merged PiN/Schottky diode (MPS).Firstly,the MPS diode operating principle is analyzed ,Though the volt-ampere characteristics of merged PiN/Schottky diode (MPS)、Schottky diode、PiN diode were simulated,the results show that the MPS diode forward voltage drop is small,current density is big,reverse leakage is small,is a kind of Schottky forward characteristics and PN junction reverse characteristics of the new rectifier. By changing Schottky and PN junction area ratio to adjust the performance of MPS diode,compared with Schottky diode and PiN diode has obvious advantages,is an indispensable power rectifier of power system.%对混合PiN/Schottky二极管(MPS)进行研究,首先对MPS二极管的工作原理进行了分析,通过对MPS二极管、肖特基二极管、PIN二极管的伏安特性进行模拟,结果表明MPS二极管正向压降小,电流密度大,反向漏电流小,是一种具有肖特基正向特性和PN结反向特性的新型整流器。可以通过改变肖特基和PN结的面积比来调整MPS二极管的性能,与肖特基二极管和PIN二极管相比具有明显的优势,是功率系统不可或缺的功率整流管。

  18. 基于有限元仿真软件的二极管优化设计%Optimization design of diode based on finite element simulation software

    Institute of Scientific and Technical Information of China (English)

    朱金荣; 唐开远; 尹志威; 赵成

    2013-01-01

    为了研究二极管的失效机制,利用有限元仿真软件建立二维有限元模型,对二极管进行热应力分析,并对其引脚尺寸进行优化设计.结果表明:二极管的应力分布不均匀主要集中在芯片位置,导致芯片较易损坏;引脚尺寸是影响二极管应力的一个因素,改变引脚尺寸可以在很大程度上减小二极管的残余应力.基于有限元仿真软件的设计可为优化二极管应力提供一种快速、科学的方法.%In order to study the failure mechanism of diodes,a two-dimensional thermal stress analysis model of diode is established and simulated by finite element simulation software.Subsequently,an optimization design for optimizing pin size of diode is conducted.The results show that the stress of diode is distributed unreasonably,mainly concentrated at the centre of diode,so this area is prone to damage.Besides,the pin size is a factor which influences the stress of diodes.Altering pin size can decrease the residual stress of diodes to a large extent.Optimization design based on finite element analysis software provides a quick and scientific method for optimizing the residual stress of diodes.

  19. Broad Spectrum Sanitizing Wipes with Food Additives Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Microcide proposes to develop novel multipurpose non-toxic sanitizing wipes that are aqueous based, have shelf life of 3-5 years, have broad spectrum microbicidal...

  20. AGN Broad Line Regions Scale with Bolometric Luminosity

    CERN Document Server

    Trippe, Sascha

    2015-01-01

    The masses of supermassive black holes in active galactic nuclei (AGN) can be derived spectroscopically via virial mass estimators based on selected broad optical/ultraviolet emission lines. These estimates commonly use the line width as a proxy for the gas speed and the monochromatic continuum luminosity as a proxy for the radius of the broad line region. However, if the size of the broad line region scales with bolometric rather than monochromatic AGN luminosity, mass estimates based on different emission lines will show a systematic discrepancy which is a function of the color of the AGN continuum. This has actually been observed in mass estimates based on H-alpha / H-beta and C IV lines, indicating that AGN broad line regions indeed scale with bolometric luminosity. Given that this effect seems to have been overlooked as yet, currently used single-epoch mass estimates are likely to be biased.

  1. Clues to Quasar Broad Line Region Geometry and Kinematics

    DEFF Research Database (Denmark)

    Vestergaard, Marianne; Wilkes, B. J.; Barthel, P. D.

    2000-01-01

    width to show significant inverse correlations with the fractional radio core-flux density, R, the radio axis inclination indicator. Highly inclined systems have broader line wings, consistent with a high-velocity field perpendicular to the radio axis. By contrast, the narrow line-core shows...... and with an accretion disk-wind emitting the broad lines. A spherical distribution of randomly orbiting broad-line clouds and a polar high-ionization outflow are ruled out....

  2. An Alkane-Soluble Dendrimer as Electron-Transport Layer in Polymer Light-Emitting Diodes.

    Science.gov (United States)

    Zhong, Zhiming; Zhao, Sen; Pei, Jian; Wang, Jian; Ying, Lei; Peng, Junbiao; Cao, Yong

    2016-08-10

    Polymer light-emitting diodes (PLEDs) have attracted broad interest due to their solution-processable properties. It is well-known that to achieve better performance, organic light-emitting diodes require multilayer device structures. However, it is difficult to realize multilayer device structures by solution processing for PLEDs. Because most semiconducting polymers have similar solubility in common organic solvents, such as toluene, xylene, chloroform, and chlorobenzene, the deposition of multilayers can cause layers to mix together and damage each layer. Herein, a novel semiorthogonal solubility relationship was developed and demonstrated. For the first time, an alkane-soluble dendrimer is utilized as the electron-transport layer (ETL) in PLEDs via a solution-based process. With the dendrimer ETL, the external quantum efficiency increases more than threefold. This improvement in the device performance is attributed to better exciton confinement, improved exciton energy transfer, and better charge carrier balance. The semiorthogonal solubility provided by alkane offers another process dimension in PLEDs. By combining them with water/alcohol-soluble polyelectrolytes, more exquisite multilayer devices can be fabricated to achieve high device performance, and new device structures can be designed and realized.

  3. An Alkane-Soluble Dendrimer as Electron-Transport Layer in Polymer Light-Emitting Diodes.

    Science.gov (United States)

    Zhong, Zhiming; Zhao, Sen; Pei, Jian; Wang, Jian; Ying, Lei; Peng, Junbiao; Cao, Yong

    2016-08-10

    Polymer light-emitting diodes (PLEDs) have attracted broad interest due to their solution-processable properties. It is well-known that to achieve better performance, organic light-emitting diodes require multilayer device structures. However, it is difficult to realize multilayer device structures by solution processing for PLEDs. Because most semiconducting polymers have similar solubility in common organic solvents, such as toluene, xylene, chloroform, and chlorobenzene, the deposition of multilayers can cause layers to mix together and damage each layer. Herein, a novel semiorthogonal solubility relationship was developed and demonstrated. For the first time, an alkane-soluble dendrimer is utilized as the electron-transport layer (ETL) in PLEDs via a solution-based process. With the dendrimer ETL, the external quantum efficiency increases more than threefold. This improvement in the device performance is attributed to better exciton confinement, improved exciton energy transfer, and better charge carrier balance. The semiorthogonal solubility provided by alkane offers another process dimension in PLEDs. By combining them with water/alcohol-soluble polyelectrolytes, more exquisite multilayer devices can be fabricated to achieve high device performance, and new device structures can be designed and realized. PMID:27435357

  4. Developing Quantum Dot Phosphor-Based Light-Emitting Diodes for Aviation Lighting Applications

    Directory of Open Access Journals (Sweden)

    Fengbing Wu

    2012-01-01

    Full Text Available We have investigated the feasibility of employing quantum dot (QD phosphor-based light-emitting diodes (LEDs in aviation applications that request Night Vision Imaging Systems (NVIS compliance. Our studies suggest that the emerging QD phosphor-based LED technology could potentially be superior to conventional aviation lighting technology by virtue of the marriage of tight spectral control and broad wavelength tunability. This largely arises from the fact that the optical properties of semiconductor nanocrystal QDs can be tailored by varying the nanocrystal size without any compositional changes. It is envisioned that the QD phosphor-based LEDs hold great potentials in cockpit illumination, back light sources of monitor screens, as well as the LED indicator lights of aviation panels.

  5. Broadband acoustic diode by using two structured impedance-matched acoustic metasurfaces

    Science.gov (United States)

    Wang, Xiao-Peng; Wan, Le-Le; Chen, Tian-Ning; Liang, Qing-Xuan; Song, Ai-Ling

    2016-07-01

    An acoustic diode (AD) is proposed and designed based on a mechanism different from the previous designs by using two structured impedance-matched acoustic metasurfaces. This AD can realize unidirectional acoustic transmission within a broad band with high transmission efficiency due to the impedance-matching condition while allowing other entities such as objects or fluids to pass freely. What is more, the backtracking waves that come from the incoming waves can be efficiently prevented and cannot disturb the source. The acoustic pressure field distribution, intensity distribution, and transmission efficiency are calculated by using the finite element method. The simulation results agree well with the theoretical predictions. Our proposed mechanism can experimentally provide a simple approach to design an AD and have potential applications in various fields such as medical ultrasound and noise insulation.

  6. Near-infrared Raman spectroscopy using a diode laser and CCD detector for tissue diagnostics

    International Nuclear Information System (INIS)

    This paper surveys the possibility to observe high-quality NIR Raman spectra of both fluorescent and non-fluorescent samples with the use of a diode laser, a fibre optic sample, a single spectrometer and a charge-coupled device (CCD) detector. A shifted excitation difference technique was implemented for removing the broad-band fluorescence emission from Raman spectra of the highly fluorescent samples. Raman spectra of 1.4-dioxane, toluene, rhodamine 6G, and HITCI in the 640 to 1840 cm-1 spectral region and 1.4-dioxane and toluene in the 400 to 3400 cm-1 spectral region have been recorded. The results open the field of sensitive tissue characterisation and the possibility of optical biopsy in vivo by using NIR Raman spectroscopy with fibre optic sampling, a single spectrometer, and a CCD detector

  7. Inverse I-V Injection Characteristics of ZnO Nanoparticle-Based Diodes.

    Science.gov (United States)

    Mundt, Paul; Vogel, Stefan; Bonrad, Klaus; von Seggern, Heinz

    2016-08-10

    Simple Al/ZnO(NP)/Au diodes produced by spin coating of ZnO nanoparticle dispersions (ZnO(NP)) on Al/Al2O3 and Au substrates and subsequent Au deposition have been investigated to understand electron injection properties of more complex devices, incorporating ZnO(NP) as injection layer. Inverse I-V characteristics have been observed compared to conventional Al/ZnO(SP)/Au diodes produced by reactive ion sputtering of ZnO. SEM micrographs reveal that the void-containing contact of ZnO(NP) with the bottom Al electrode and the rough morphology of the top Au electrode are likely to be responsible for the observed injection and ejection probabilities of electrons. A simple tunneling model, incorporating the voids, explains the strongly reduced injection currents from Al whereas the top electrode fabricated by vapor deposition of Au onto the nanoparticle topology adopts the inverse ZnO(NP) morphology leading to enlarged injection areas combined with Au-tip landscapes. These tips in contrast to the smooth sputtered ZnO(SP) lead to electric field enhancement and strongly increased injection of electrons in reverse direction. The injected charge piles up at the barrier generated by voids between ZnO(NP) and the bottom electrode forcing a change in the barrier shape and therefore allowing for higher ejection rates. Both effects in combination explain the inverse I-V characteristic of nanoparticle based diodes. PMID:27443793

  8. Single-molecule diodes with high rectification ratios through environmental control.

    Science.gov (United States)

    Capozzi, Brian; Xia, Jianlong; Adak, Olgun; Dell, Emma J; Liu, Zhen-Fei; Taylor, Jeffrey C; Neaton, Jeffrey B; Campos, Luis M; Venkataraman, Latha

    2015-06-01

    Molecular electronics aims to miniaturize electronic devices by using subnanometre-scale active components. A single-molecule diode, a circuit element that directs current flow, was first proposed more than 40 years ago and consisted of an asymmetric molecule comprising a donor-bridge-acceptor architecture to mimic a semiconductor p-n junction. Several single-molecule diodes have since been realized in junctions featuring asymmetric molecular backbones, molecule-electrode linkers or electrode materials. Despite these advances, molecular diodes have had limited potential for applications due to their low conductance, low rectification ratios, extreme sensitivity to the junction structure and high operating voltages. Here, we demonstrate a powerful approach to induce current rectification in symmetric single-molecule junctions using two electrodes of the same metal, but breaking symmetry by exposing considerably different electrode areas to an ionic solution. This allows us to control the junction's electrostatic environment in an asymmetric fashion by simply changing the bias polarity. With this method, we reliably and reproducibly achieve rectification ratios in excess of 200 at voltages as low as 370 mV using a symmetric oligomer of thiophene-1,1-dioxide. By taking advantage of the changes in the junction environment induced by the presence of an ionic solution, this method provides a general route for tuning nonlinear nanoscale device phenomena, which could potentially be applied in systems beyond single-molecule junctions.

  9. Pulse Shape Characterization of Silicon Diodes for HGCal with data from Beam Test at CERN

    CERN Document Server

    De Silva, Malinda

    2016-01-01

    The High Luminosity phase of the LHC (starting operation in 2025) will provide unprecedented instantaneous and integrated luminosity, with 25 ns bunch crossing intervals and up to 140 pileup events. A challenge is to provide excellent physics performance in such a harsh environment to fully exploit the HL-LHC potentialities and explore new physics frontiers. In this context, the High Granularity Calorimeter is the detector designed to provide electromagnetic and hadronic energy coverage and reconstruction in the forward direction of the upgraded CMS. In April 2016 and June 2016, a set of 36 diodes were tested in order to understand various characteristics of its performance, in order to use them in the upgraded HG Calorimeter. Here, the silicon diodes were mounted onto a test bench at CERN’s beam test area and exposed to electron showers. Data received from these diodes were acquired and analysed separately. The objective of this report is to show the variation of Time Rise, Time Over Threshold with various...

  10. Inverse I-V Injection Characteristics of ZnO Nanoparticle-Based Diodes.

    Science.gov (United States)

    Mundt, Paul; Vogel, Stefan; Bonrad, Klaus; von Seggern, Heinz

    2016-08-10

    Simple Al/ZnO(NP)/Au diodes produced by spin coating of ZnO nanoparticle dispersions (ZnO(NP)) on Al/Al2O3 and Au substrates and subsequent Au deposition have been investigated to understand electron injection properties of more complex devices, incorporating ZnO(NP) as injection layer. Inverse I-V characteristics have been observed compared to conventional Al/ZnO(SP)/Au diodes produced by reactive ion sputtering of ZnO. SEM micrographs reveal that the void-containing contact of ZnO(NP) with the bottom Al electrode and the rough morphology of the top Au electrode are likely to be responsible for the observed injection and ejection probabilities of electrons. A simple tunneling model, incorporating the voids, explains the strongly reduced injection currents from Al whereas the top electrode fabricated by vapor deposition of Au onto the nanoparticle topology adopts the inverse ZnO(NP) morphology leading to enlarged injection areas combined with Au-tip landscapes. These tips in contrast to the smooth sputtered ZnO(SP) lead to electric field enhancement and strongly increased injection of electrons in reverse direction. The injected charge piles up at the barrier generated by voids between ZnO(NP) and the bottom electrode forcing a change in the barrier shape and therefore allowing for higher ejection rates. Both effects in combination explain the inverse I-V characteristic of nanoparticle based diodes.

  11. Influence of Preparation Conditions on Electrical Properties of the Al/Alq3/Si Diode Structures

    Directory of Open Access Journals (Sweden)

    Irina ČERNIUKĖ

    2013-12-01

    Full Text Available Hybrid organic-inorganic diode structures, Al/Alq3/n-Si and Al/Alq3/p-Si based on thin films of tris(8-hydroxyquinoline aluminum (Alq3 have been investigated. The Alq3 films were evaporated in vacuum and spin coated onto patterned areas of crystalline n- and p-type Si substrates with chemically removed native SiO2 layer. Current-voltage characteristics of the diode structures demonstrated improved rectification property compared to similar Al/n-Si and Al/p-Si device structures. Increased barrier height values (0.90 eV ÷ 1.1 eV and 0.77 eV ÷ 0.91 eV for the Al/Alq3/n-Si and Al/Alq3/p-Si device structures, respectively certified presence of an interface dipole induced by the organic interlayer. Non-ideal behavior of forward current-voltage characteristics has been explained assuming non-uniformity of barrier height, presence of interface states, and influence of the organic film on diode series resistance and space charge limited current. DOI: http://dx.doi.org/10.5755/j01.ms.19.4.2733

  12. Improving Metal-Oxide-Metal (MOM) Diode Performance Via the Optimization of the Oxide Layer

    Science.gov (United States)

    Dodd, Linzi E.; Shenton, Samantha A.; Gallant, Andrew J.; Wood, David

    2015-05-01

    Small area metal-oxide-metal (MOM) diodes are being investigated in many research groups for the detection of THz frequency radiation. In order to create a high-speed rectifying device, the central oxide layer of the MOM structure must be thin and have known physical characteristics. The thickness, structure and uniformity of the oxide can be controlled during the fabrication process. In the work presented here, the effects of both oxygen plasma concentration and annealing temperature during fabrication of MOM diodes have been explored. It has been found that, by reducing the oxygen gas concentration from previous work, the layer can be more repeatable and uniform. Furthermore, for an anneal temperature up to a threshold temperature in the to range, the performance of the diodes is excellent, with a value of zero-bias curvature coefficient (CCZB) that can be up to . For higher temperature treatments, the value of CCZB decreases to a maximum of . Similar trends in AC tests can be seen for voltage and current responsivity values.

  13. Structure, stability properties, and nonlinear dynamics of lateral modes of a broad area semiconductor laser

    DEFF Research Database (Denmark)

    Blaaberg, Søren

    2007-01-01

    Bred-areal halvlederlasere er kompakte lasere designet til at levere høj udgangseffekt (>1 Watt). Den høje effekt opnås ved at gøre laserens aktive område bredt (>100 mikrometer) samt laserspejlene endnu bredere. I det aktive område pumpes laseren elektrisk. Langs laserens ene tværstillede akse l...

  14. A Flight-like Integrated Circulator for Broad Area Cooling Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Future instruments and platforms for NASA space applications will require increasingly sophisticated thermal control technology, and cryogenic applications will...

  15. A practical guide to handling laser diode beams

    CERN Document Server

    Sun, Haiyin

    2015-01-01

    This book offers the reader a practical guide to the control and characterization of laser diode beams.  Laser diodes are the most widely used lasers, accounting for 50% of the global laser market.  Correct handling of laser diode beams is the key to the successful use of laser diodes, and this requires an in-depth understanding of their unique properties. Following a short introduction to the working principles of laser diodes, the book describes the basics of laser diode beams and beam propagation, including Zemax modeling of a Gaussian beam propagating through a lens.  The core of the book is concerned with laser diode beam manipulations: collimating and focusing, circularization and astigmatism correction, coupling into a single mode optical fiber, diffractive optics and beam shaping, and manipulation of multi transverse mode beams.  The final chapter of the book covers beam characterization methods, describing the measurement of spatial and spectral properties, including wavelength and linewidth meas...

  16. Respiratory complications after diode-laser-assisted tonsillotomy.

    Science.gov (United States)

    Fischer, Miloš; Horn, Iris-Susanne; Quante, Mirja; Merkenschlager, Andreas; Schnoor, Jörg; Kaisers, Udo X; Dietz, Andreas; Kluba, Karsten

    2014-08-01

    Children with certain risk factors, such as comorbidities or severe obstructive sleep apnea syndrome (OSAS) are known to require extended postoperative monitoring after adenotonsillectomy. However, there are no recommendations available for diode-laser-assisted tonsillotomy. A retrospective chart review of 96 children who underwent diode-laser-assisted tonsillotomy (07/2011-06/2013) was performed. Data for general and sleep apnea history, power of the applied diode-laser (λ = 940 nm), anesthesia parameters, the presence of postoperative respiratory complications and postoperative healing were evaluated. After initially uncomplicated diode-laser-assisted tonsillotomy, an adjustment of post-anesthesia care was necessary in 16 of 96 patients due to respiratory failure. Respiratory complications were more frequent in younger children (3.1 vs. 4.0 years, p = 0.049, 95 % CI -1.7952 to -0.0048) and in children who suffered from nocturnal apneas (OR = 5.00, p diode-laser power higher than 13 W could be identified as a risk factor for the occurrence of a postoperative oropharyngeal edema (OR = 3.45, p diode-laser-assisted tonsillotomy. We recommend a reduced diode-laser power (<13 W) to reduce oropharyngeal edema.

  17. Additional electric field in real trench MOS barrier Schottky diode

    Science.gov (United States)

    Mamedov, R. K.; Aslanova, A. R.

    2016-04-01

    In real trench MOS barrier Schottky diode (TMBS diode) additional electric field (AEF) the whole is formed in the near contact region of the semiconductor and its propagation space is limited with the barrier metal and the metallic electrodes of MOS structures. Effective potential barrier height TMBS diode is formed via resulting electric field of superposition AEF and electric field of space charge region (SCR) semiconductor. The dependence of the resulting electric field intensity of the distance towards the inside the semiconductor is nonlinear and characterized by a peak at a certain distance from the interface. The thickness of the SCR in TMBS diode becomes equal to the trench depth. Force and energy parameters of the AEF, and thus resulting electric field in the SCR region, become dependent on the geometric design parameters TMBS diode. The forward I-V characteristic TMBS diode is described by the thermionic emission theory as in conventional flat Scottky diode, and in the reverse bias, current is virtually absent at initial voltage, appears abruptly at a certain critical voltage.

  18. Light-Emitting Diodes: Phosphorescent Nanocluster Light-Emitting Diodes (Adv. Mater. 2/2016).

    Science.gov (United States)

    Kuttipillai, Padmanaban S; Zhao, Yimu; Traverse, Christopher J; Staples, Richard J; Levine, Benjamin G; Lunt, Richard R

    2016-01-13

    On page 320, R. R. Lunt and co-workers demonstrate electroluminescence from earth-abundant phosphorescent metal halide nanoclusters. These inorganic emitters, which exhibit rich photophysics combined with a high phosphorescence quantum yield, are employed in red and near-infrared light-emitting diodes, providing a new platform of phosphorescent emitters for low-cost and high-performance light-emission applications.

  19. In vitro study of the diode laser effect on artificial demineralized surface of human dental enamel

    International Nuclear Information System (INIS)

    In scientific literature there are many reports about fusion and resolidification of dental enamel after laser irradiation and their capability to generate surfaces with increased resistance to demineralization compared to non-irradiated areas. The use of high power diode laser on demineralized surfaces of human dental enamel is presented as a good alternative in caries prevention. The purpose of this study is to investigate the morphological changes produced by the use of one high power diode laser on human dental enamel surface after demineralization treatment with lactic acid, under chosen parameters. Fifteen samples of human dental molars were used and divided in four groups: control - demineralization treatment with lactic acid and no irradiation, and demineralization treatment with lactic acid followed of irradiation with 212,20 mJ/cm2, 282,84 mJ/cm2 and 325,38 mJ/cm2, respectively. The samples were irradiated with high power diode laser (808 nm) with a 300 μm diameter fiber optics. Black ink was used on enamel surface to enhance the superficial absorption. The samples were studied by optical microscopy and scanning electron microscopy. Modifications on the enamel surfaces were observed. Such modifications were characterized by melted and re-solidified region of the enamel. According with our results the best parameter was 2.0 W, presenting the most uniform surface. The use of high power diode laser as demonstrated in this study is able to promote melting and re-solidification on human dental enamel. (author)

  20. Current transport mechanisms in mercury cadmium telluride diode

    Science.gov (United States)

    Gopal, Vishnu; Li, Qing; He, Jiale; He, Kai; Lin, Chun; Hu, Weida

    2016-08-01

    This paper reports the results of modelling of the current-voltage characteristics (I-V) of a planar mid-wave Mercury Cadmium Telluride photodiode in a gate controlled diode experiment. It is reported that the diode exhibits nearly ideal I-V characteristics under the optimum surface potential leading to the minimal surface leakage current. Deviations from the optimum surface potential lead to non ideal I-V characteristics, indicating a strong relationship between the ideality factor of the diode with its surface leakage current. Diode's I-V characteristics have been modelled over a range of gate voltages from -9 V to -2 V. This range of gate voltages includes accumulation, flat band, and depletion and inversion conditions below the gate structure of the diode. It is shown that the I-V characteristics of the diode can be very well described by (i) thermal diffusion current, (ii) ohmic shunt current, (iii) photo-current due to background illumination, and (iv) excess current that grows by the process of avalanche multiplication in the gate voltage range from -3 V to -5 V that corresponds to the optimum surface potential. Outside the optimum gate voltage range, the origin of the excess current of the diode is associated with its high surface leakage currents. It is reported that the ohmic shunt current model applies to small surface leakage currents. The higher surface leakage currents exhibit a nonlinear shunt behaviour. It is also shown that the observed zero-bias dynamic resistance of the diode over the entire gate voltage range is the sum of ohmic shunt resistance and estimated zero-bias dynamic resistance of the diode from its thermal saturation current.

  1. Performance of EPI diodes as dosimeters for photon beam radiotherapy

    Energy Technology Data Exchange (ETDEWEB)

    Santos, Thais C. dos; Bizetto, Cesar A., E-mail: ccbueno@ipen.br [Instituto de Pesquisas Energeticas e Nucleares (IPEN/CNEN-SP), Sao Paulo, SP (Brazil); Neves-Junior, Wellington F.P.; Haddad, Cecilia M.K. [Hospital Sirio Libanes (HSL), Sao Paulo, SP (Brazil); Goncalves, Josemary A.C.; Bueno, Carmen C. [Instituto de Pesquisas Energeticas e Nucleares (IPEN/CNEN-SP), Sao Paulo, SP (Brazil); Pontificia Universidade Catolica de Sao Paulo (PUC-SP), SP (Brazil)

    2011-07-01

    In this work we present the preliminary results about the performance of an epitaxial (EPI) diode as on-line dosimeter for photon beam radiotherapy. The diode used was processed at University of Hamburg on n-type 75 {mu}m thick epitaxial silicon layer grown on a highly doped n-type 300 {mu}m thick Czochralski (Cz) silicon substrate. The measurements were performed with a diode which not received any type of pre-dose. In order to use this device as a dosimeter, it was enclosed in a black polymethylmethacrylate (PMMA) probe. The diode was connected to an electrometer Keithley 6517B in the photovoltaic mode. During all measurements, the diode was held between PMMA plates, placed at 10.0 cm depth and centered in a radiation field of 10 x 10 cm{sup 2}, with the source-to-surface distance (SSD) kept at 100 cm. The short-term repeatability was measured with photon beams of 6 and 18 MV energy by registering five consecutive current signals for the same radiation dose. The current signals induced showed good instantaneous repeatability of the diode, characterized by a smallest coefficient of variation (CV) of 0.21%. Furthermore, the dose-response curves of the diode were quite linear with the highest charge sensitivity achieved of 5.0 {mu}C/Gy. It worth noting that still remains to be investigated the pre-dose influence on epitaxial silicon diode response in radiotherapy photon beam dosimetry, the long term stability and the radiation hardness of these diodes for absorbed doses higher than that investigated in this work. All these studies are under way. (author)

  2. Ion source diodes with magnetic mirror

    International Nuclear Information System (INIS)

    This device includes a grid anode, a first cathode set in front cf the anode, and a magnetic mirror behind the anode. It is a winding coaxial to the anode and the cathode. Anode and cathode have spherical cap shapes whose concavity is directed towards a target. Then the ion beam has some focusing. Electrons, emitted by cathode, are accelerated towards the anode and cross through it. These electrons are submitted to the winding magnetic field. Their trajectories curved around the field lines and lie on the diode axis. Then electrons go backwards through again the anode. Electrons oscillate thus a great number a time. At each passage, they give energy to the anode, that creates plasma round it. Ions are extracted from that plasma and accelerated by interelectrode field. As there is no electric field in the back of the anode, there is an ion beam emitted only foreward

  3. A single blue nanorod light emitting diode

    Science.gov (United States)

    Hou, Y.; Bai, J.; Smith, R.; Wang, T.

    2016-05-01

    We report a light emitting diode (LED) consisting of a single InGaN/GaN nanorod fabricated by a cost-effective top-down approach from a standard LED wafer. The device demonstrates high performance with a reduced quantum confined Stark effect compared with a standard planar counterpart fabricated from the same wafer, confirmed by optical and electrical characterization. Current density as high as 5414 A cm‑2 is achieved without significant damage to the device due to the high internal quantum efficiency. The efficiency droop is mainly ascribed to Auger recombination, which was studied by an ABC model. Our work provides a potential method for fabricating compact light sources for advanced photonic integrated circuits without involving expensive or time-consuming fabrication facilities.

  4. Active coherent beam combining of diode lasers.

    Science.gov (United States)

    Redmond, Shawn M; Creedon, Kevin J; Kansky, Jan E; Augst, Steven J; Missaggia, Leo J; Connors, Michael K; Huang, Robin K; Chann, Bien; Fan, Tso Yee; Turner, George W; Sanchez-Rubio, Antonio

    2011-03-15

    We have demonstrated active coherent beam combination (CBC) of up to 218 semiconductor amplifiers with 38.5 W cw output using up to eleven one-dimensional 21-element individually addressable diode amplifier arrays operating at 960 nm. The amplifier array elements are slab-coupled-optical-waveguide semiconductor amplifiers (SCOWAs) set up in a master-oscillator-power-amplifier configuration. Diffractive optical elements divide the master-oscillator beam to seed multiple arrays of SCOWAs. A SCOWA was phase actuated by adjusting the drive current to each element and controlled using a stochastic-parallel-gradient-descent (SPGD) algorithm for the active CBC. The SPGD is a hill-climbing algorithm that maximizes on-axis intensity in the far field, providing phase locking without needing a reference beam.

  5. Light-emitting diodes for analytical chemistry.

    Science.gov (United States)

    Macka, Mirek; Piasecki, Tomasz; Dasgupta, Purnendu K

    2014-01-01

    Light-emitting diodes (LEDs) are playing increasingly important roles in analytical chemistry, from the final analysis stage to photoreactors for analyte conversion to actual fabrication of and incorporation in microdevices for analytical use. The extremely fast turn-on/off rates of LEDs have made possible simple approaches to fluorescence lifetime measurement. Although they are increasingly being used as detectors, their wavelength selectivity as detectors has rarely been exploited. From their first proposed use for absorbance measurement in 1970, LEDs have been used in analytical chemistry in too many ways to make a comprehensive review possible. Hence, we critically review here the more recent literature on their use in optical detection and measurement systems. Cloudy as our crystal ball may be, we express our views on the future applications of LEDs in analytical chemistry: The horizon will certainly become wider as LEDs in the deep UV with sufficient intensity become available.

  6. Kinetics of current formation in molecular diode

    International Nuclear Information System (INIS)

    Based on the kinetic theory of election transfer in low-dimensional molecular systems, the formation of transient and stationary currents in a system 'electrode l-molecule-electrode 2' (molecular diode) is studied for different regimes of charge transmission. In the framework of the HOMO-LUMO molecular model, a situation is considered where the current formation is initiated either by molecule photoexcitation or by change of interelectrode voltage bias. It is found that the distant (tunnel) inelastic electron transfer plays a crucial role in changing molecular electronic states and, as a result, in generating transmission channels for hopping (sequential) and distant (direct) current components. The effect of inelastic tunneling is especially pronounced in the condition of resonant electron transmission.

  7. Terahertz optoelectronics with surface plasmon polariton diode.

    Science.gov (United States)

    Vinnakota, Raj K; Genov, Dentcho A

    2014-05-09

    The field of plasmonics has experience a renaissance in recent years by providing a large variety of new physical effects and applications. Surface plasmon polaritons, i.e. the collective electron oscillations at the interface of a metal/semiconductor and a dielectric, may bridge the gap between electronic and photonic devices, provided a fast switching mechanism is identified. Here, we demonstrate a surface plasmon-polariton diode (SPPD) an optoelectronic switch that can operate at exceedingly large signal modulation rates. The SPPD uses heavily doped p-n junction where surface plasmon polaritons propagate at the interface between n and p-type GaAs and can be switched by an external voltage. The devices can operate at transmission modulation higher than 98% and depending on the doping and applied voltage can achieve switching rates of up to 1 THz. The proposed switch is compatible with the current semiconductor fabrication techniques and could lead to nanoscale semiconductor-based optoelectronics.

  8. Terahertz imaging system with resonant tunneling diodes

    Science.gov (United States)

    Miyamoto, Tomoyuki; Yamaguchi, Atsushi; Mukai, Toshikazu

    2016-03-01

    We report a feasibility study of a terahertz imaging system with resonant tunneling diodes (RTDs) that oscillate at 0.30 THz. A pair of RTDs acted as an emitter and a detector in the system. Terahertz reflection images of opaque samples were acquired with our RTD imaging system. A spatial resolution of 1 mm, which is equal to the wavelength of the RTD emitter, was achieved. The signal-to-noise ratio (SNR) of the reflection image was improved by 6 dB by using polarization optics that reduced interference effects. Additionally, the coherence of the RTD enabled a depth resolution of less than 3 µm to be achieved by an interferometric technique. Thus, RTDs are an attractive candidate for use in small THz imaging systems.

  9. Resonant tunneling diode photodetector with nonconstant responsivity

    Science.gov (United States)

    Dong, Yu; Wang, Guanglong; Ni, Haiqiao; Chen, Jianhui; Gao, Fengqi; Li, Baochen; Pei, Kangming; Niu, Zhichuan

    2015-11-01

    Resonant tunneling diode with an In0.53Ga0.47As absorption layer is designed for light detection at 1550 nm. The responsivity of the detector is simulated by solving the Tsu-Esaki equation. The simulation results show that the responsivity of the detector is nonconstant. It decreases with the increment of the power density of the incident light. Samples of the detector are fabricated by molecular beam epitaxy. The experimental results show that the responsivity increases while the power density of the incident light decreases which agree with the simulation results. The responsivity reaches 4.8×108 A/(W/μm2) at room temperature and 5.0×109 A/(W/μm2) at 77 K when the power density of the incident light is 1×10-13 W/μm2.

  10. Study of PIN diode energy traps created by neutrons

    Science.gov (United States)

    Sopko, V.; Sopko, B.; Chren, D.; Dammer, J.

    2013-03-01

    Characterization of radiation defects is still ongoing and finds greater application in the increasing radiation doses on semiconductor detectors in experiments. Studying the changes of silicon PIN diode for high doses of radiation is the fundamental motivation for our measurements. In this article we describe the behavior of the PIN diode and development of the disorder caused by neutrons from a 252Cf and doses up to 8 Gy. The calibration curve for PIN diode shows the effect of disorders as the changes of the voltampere characteristics depending on the dose of neutron irradiation. The measured values for defects are in good agreement with created energy traps.

  11. Forward gated-diode method for parameter extraction of MOSFETs*

    Institute of Scientific and Technical Information of China (English)

    Zhang Chenfei; Ma Chenyue; Guo Xinjie; Zhang Xiufang; He Jin; Wang Guozeng; Yang Zhang; Liu Zhiwei

    2011-01-01

    The forward gated-diode method is used to extract the dielectric oxide thickness and body doping concentration of MOSFETs, especially when both of the variables are unknown previously. First, the dielectric oxide thickness and the body doping concentration as a function of forward gated-diode peak recombination-generation (R-G) current are derived from the device physics. Then the peak R-G current characteristics of the MOSFETs with different dielectric oxide thicknesses and body doping concentrations are simulated with ISE-Dessis for parameter extraction. The results from the simulation data demonstrate excellent agreement with those extracted from the forward gated-diode method.

  12. Bipolar Host Materials for Organic Light-Emitting Diodes.

    Science.gov (United States)

    Yook, Kyoung Soo; Lee, Jun Yeob

    2016-02-01

    It is important to balance holes and electrons in the emitting layer of organic light-emitting diodes to maximize recombination efficiency and the accompanying external quantum efficiency. Therefore, the host materials of the emitting layer should transport both holes and electrons for the charge balance. From this perspective, bipolar hosts have been popular as the host materials of thermally activated delayed fluorescent devices and phosphorescent organic light-emitting diodes. In this review, we have summarized recent developments of bipolar hosts and suggested perspectives of host materials for organic light-emitting diodes.

  13. A transient model of a cesium-barium diode

    Energy Technology Data Exchange (ETDEWEB)

    Luke, J.R.; El-Genk, M.S.

    1995-01-01

    In this work a transient model of a Cs-Ba diode is developed, and a series of experiments is performed using a diode equipped with Langmuir probes. The Langmuir probe data show that the electron energy distribution is non-Maxwellian at low discharge currents, indicating the presence of an electron beam from the emitter. Experimental results also showed that the plasma properties are non-homogeneous across the 1 mm diode gap; the electron temperature and plasma potential were higher near the emitter and the plasma density was higher near the collector. Experimental evidence is presented to show that the discharge contracts to a filament below the maximum thermal emission current.

  14. Diode-Assisted Buck-Boost Voltage-Source Inverters

    DEFF Research Database (Denmark)

    Gao, Feng; Loh, Poh Chiang; Teodorescu, Remus;

    2009-01-01

    This paper proposes a number of diode-assisted buck-boost voltage-source inverters with a unique X-shaped diode-capacitor network inserted between the inverter circuitry and dc source for producing a voltage gain that is comparatively higher than those of other buck-boost conversion techniques....... Using the diode-assisted network, the proposed inverters can naturally configure themselves to perform capacitive charging in parallel and discharging in series to give a higher voltage multiplication factor without compromising waveform quality. In addition, by adopting different front-end circuitries...

  15. Construction of Tunnel Diode Oscillator for AC Impedance Measurement

    Science.gov (United States)

    Shin, J. H.; Kim, E.

    2014-03-01

    We construct a tunnel diode oscillator (TDO) to study electromagnetic response of a superconducting thin film. Highly sensitive tunnel diode oscillators allow us to detect extremely small changes in electromagnetic properties such as dielectric constant, ac magnetic susceptibility and magnetoresistance. A tunnel diode oscillator is a self-resonant oscillator of which resonance frequency is primarily determined by capacitance and inductance of a resonator. Amplitude of the signal depends on the quality factor of the resonator. The change in the impedance of the sample electromagnetic coupled to one of inductors in the resonator alters impedance of the inductor, and leads to the shift in the resonance frequency and the change of the amplitude.

  16. A XOR Threshold Logic Implementation Through Resonant Tunneling Diode

    Directory of Open Access Journals (Sweden)

    Nitesh Kumar Dixit

    2012-10-01

    Full Text Available Resonant tunneling diodes (RTDs have functional versatility and high speed switching capability. The integration of resonant tunneling diodes and MOS transistor makes threshold gates and logics. The design and fabrication of linear threshold gates will be presented based on a mono stable bis table transition logic element. Each of its input terminals consist out of a resonant tunnelling diode merged with a transistor device. The circuit models of RTD and MOSFET are simulated in HSPICE. Two input XOR gate is designed and tested.

  17. A XOR Threshold Logic Implementation Through Resonant Tunneling Diode

    Directory of Open Access Journals (Sweden)

    Nitesh Kumar Dixit

    2012-11-01

    Full Text Available Resonant tunneling diodes (RTDs have functional versatility and high speed switching capability. The integration of resonant tunneling diodes and MOS transistor makes threshold gates and logics. The design and fabrication of linear threshold gates will be presented based on a monostable bistable transition logic element. Each of its input terminals consist out of a resonant tunnelling diode merged with a transistor device. The circuit models of RTD and MOSFET are simulated in HSPICE. Two input XOR gate is designed and tested.

  18. Tapered diode laser pumped 946 nm Nd:YAG laser

    DEFF Research Database (Denmark)

    Cheng, Haynes Pak Hay; Jensen, Ole Bjarlin; Petersen, Paul Michael;

    2009-01-01

    We successfully implemented a 946 nm Nd:YAG laser based on a 808 nm tapered diode pump laser. The tapered diode is developed at the Ferdinand-Braun-Institute fur Hochstfrequenztechnik in Germany. Figure 2 shows the experimental setup and results of each pump source coupled into a 1.5 mm crystal...... laser, we show that tapered diode laser pumping potentially increase the power of 946 nm lasers by a factor of two and reduce the threshold by a factor of three....

  19. Broadband Light Source Based on Four-Color Self-Assembled InAs Quantum Dot Ensembles Monolithically Grown in Selective Areas

    Science.gov (United States)

    Ozaki, Nobuhiko; Takeuchi, Koichi; Ohkouchi, Shunsuke; Ikeda, Naoki; Sugimoto, Yoshimasa; Asakawa, Kiyoshi; Hogg, Richard A.

    We developed advanced techniques for the growth of self-assembled quantum dots (QDs) for fabricating a broadband light source that can be applied to optical coherence tomography (OCT). Four QD ensembles and strain reducing layers (SRLs) were grown in selective areas on a wafer by the use of a 90° rotational metal mask. The SRL thickness was varied to achieve appropriate shifts in the peak wavelength of the QD emission spectrum of up to 120nm. The four-color QD ensembles were expected to have a broad bandwidth of more than 160nm due to the combination of excited state emissions when introduced in a current-induced broadband light source such as a superluminescent diode (SLD). Furthermore, a desired shape of the SLD spectrum can be obtained by controlling the injection current applied to each QD ensemble. The broadband and spectrum shape controlled light source is promising for high-resolution and low-noise OCT systems.

  20. Bid Optimization in Broad-Match Ad auctions

    CERN Document Server

    Even-dar, Eyal; Mirrokni, Vahab; Muthukrishnan, S; Nadav, Uri

    2009-01-01

    Ad auctions in sponsored search support ``broad match'' that allows an advertiser to target a large number of queries while bidding only on a limited number. While giving more expressiveness to advertisers, this feature makes it challenging to optimize bids to maximize their returns: choosing to bid on a query as a broad match because it provides high profit results in one bidding for related queries which may yield low or even negative profits. We abstract and study the complexity of the {\\em bid optimization problem} which is to determine an advertiser's bids on a subset of keywords (possibly using broad match) so that her profit is maximized. In the query language model when the advertiser is allowed to bid on all queries as broad match, we present an linear programming (LP)-based polynomial-time algorithm that gets the optimal profit. In the model in which an advertiser can only bid on keywords, ie., a subset of keywords as an exact or broad match, we show that this problem is not approximable within any ...

  1. Investigation of temperature feedback signal parameters during neoplasms treatment by diode laser radiation

    Science.gov (United States)

    Belikov, Andrey V.; Gelfond, Mark L.; Shatilova, Ksenia V.; Semyashkina, Yulia V.

    2016-04-01

    Dynamics of temperature signal in operation area and laser power at nevus, papilloma, and keratoma in vivo removal by a 980+/-10 nm diode laser with "blackened" tip operating in continuous (CW) mode and with temperature feedback (APC) mode are presented. Feedback allows maintaining temperature in the area of laser treatment at a preset level by regulating power of diode laser radiation (automatic power control). Temperature in the area of laser treatment was controlled by measuring the amplitude of thermal radiation, which occurs when tissue is heated by laser radiation. Removal of neoplasm was carried out in CW mode with laser radiation average power of 12.5+/-0.5 W; mean temperature in the area of laser treatment was 900+/-10°C for nevus, 800+/-15°C for papilloma, and 850+/-20°C for keratoma. The same laser radiation maximal power (12.5 W) and targeted temperature (900°C) were set for nevus removal in APC mode. The results of investigation are real time oscillograms of the laser power and temperature in the area of laser treatment at neoplasms removal in two described above modes. Simultaneously with the measurement of laser power and the temperature in the area of laser treatment video recording of surgeon manipulations was carried out. We discuss the correlation between the power of the laser radiation, the temperature in the area of laser treatment and consistency of surgeon manipulation. It is shown that the method of removal (excision with or without traction, scanning) influences the temperature in the area of laser treatment. It was found, that at removal of nevus with temperature feedback (APC) mode to achieve comparable with CW mode temperature in the area of laser treatment (900+/-10°C) 20-50% less laser power is required. Consequently, removing these neoplasms in temperature feedback mode can be less traumatic than the removal in CW mode.

  2. An Improved Physics-Based Formulation of the Microwave p-i-n Diode Impedance

    OpenAIRE

    Gatard, Emmanuel; Sommet, Raphaël; Bouysse, Philippe; Quéré, Raymond

    2007-01-01

    International audience An improved formulation of the frequency-dependent impedance for p-i-n diodes from physical and geometrical parameters is presented. This work is addressed to diode designers and allows them to evaluate quickly and accurately the diode impedance. It comes in parallel with existing SPICE p-i-n diode model [1] used in CAD software. Under forward bias conditions, important recombinations occur in the heavily doped end regions of thin p-i-n diodes that seriously affects ...

  3. Transient Processes in the GaAs-Based Microwave-PIN-Diodes

    Science.gov (United States)

    Ayzenshtat, G. I.; Yushchenko, A. Yu.; Bozhkov, V. G.

    2015-04-01

    The results of studies of transient characteristics of microwave-pin-diodes based on gallium arsenide are presented. It is shown that in these diodes, a transient process occurs in two stages resulting in a complicated pulse shape during the diode switching. The dependences of the effective lifetime on the diode radius and forward current value are measured. It is experimentally established that the effective lifetime in the diodes depends on the radius of the active region.

  4. Efficiency roll-off in organic light-emitting diodes.

    Science.gov (United States)

    Murawski, Caroline; Leo, Karl; Gather, Malte C

    2013-12-17

    Organic light-emitting diodes (OLEDs) have attracted much attention in research and industry thanks to their capability to emit light with high efficiency and to deliver high-quality white light that provides good color rendering. OLEDs feature homogeneous large area emission and can be produced on flexible substrates. In terms of efficiency, OLEDs can compete with highly efficient conventional light sources but their efficiency typically decreases at high brightness levels, an effect known as efficiency roll-off. In recent years, much effort has been undertaken to understand the underlying processes and to develop methods that improve the high-brightness performance of OLEDs. In this review, we summarize the current knowledge and provide a detailed description of the relevant principles, both for phosphorescent and fluorescent emitter molecules. In particular, we focus on exciton-quenching mechanisms, such as triplet-triplet annihilation, quenching by polarons, or field-induced quenching, but also discuss mechanisms such as changes in charge carrier balance. We further review methods that may reduce the roll-off and thus enable OLEDs to be used in high-brightness applications. PMID:24019178

  5. Changes in Cell Viability of Wounded Fibroblasts following Laser Irradiation in Broad-Spectrum or Infrared Light

    International Nuclear Information System (INIS)

    Objective. This study aimed to establish if broad-spectrum or infrared (IR) light in combination with laser therapy can assist phototherapy to improve the cell function of wounded cells. Background. The effect of laser light may be partly or completely reduced by broad-spectrum light. Methods. Wounded human skin fibroblasts were irradiated with 5 J/cm2 using a helium-neon laser, a diode laser, or an Nd:YAG laser in the dark, in the light, or in IR. Changes in cell viability were evaluated by cell morphology, ATP cell viability, LDH membrane integrity, and caspase 3/7 as an early marker of apoptosis. Results. Wounded cells exposed to 5 J/cm2 using 632.8 nm in the dark or 830 nm in the light or 1064 nm in the dark showed an increase in ATP viability, an increase in cytokine expression, and a decrease in LDH cytotoxicity indicating that the metabolic activity of the wounded cells was stimulated. Conclusion. Wounded cells irradiated in IR light showed an undesirable thermal effect that was proportional to the duration of exposure.

  6. Broad ligament pregnancy a diagnostic dilemma: a case report

    Directory of Open Access Journals (Sweden)

    Amit Gupta

    2016-07-01

    Full Text Available Broad ligament pregnancy is one of the rarest forms of ectopic pregnancy with high risk of maternal mortality. Although ultrasonography is usually helpful in making the diagnosis but it is mostly established during laparotomy. 34 year old G2P1 with previous caesarean section reported at 8th month of pregnancy with inability to perceive foetal movements. Ultrasonography confirmed intrauterine fetal demise. Patient was taken for caesarean section after failed induction. Intraoperative diagnosis of broad ligament pregnancy was made and broad ligament along with fetus, sac, fallopian tube and ovary was excised. Post-operative period was uneventful. [Int J Reprod Contracept Obstet Gynecol 2016; 5(7.000: 2478-2480

  7. Wavelength-agile diode-laser sensing strategies for monitoring gas properties in optically harsh flows: application in cesium-seeded pulse detonation.

    Science.gov (United States)

    Sanders, Scott; Mattison, Daniel; Ma, Lin; Jeffries, Jay; Hanson, Ronald

    2002-06-17

    The rapid, broad wavelength scanning capabilities of advanced diode lasers allow extension of traditional diode-laser absorption techniques to high pressure, transient, and generally hostile environments. Here, we demonstrate this extension by applying a vertical cavity surface-emitting laser (VCSEL) to monitor gas temperature and pressure in a pulse detonation engine (PDE). Using aggressive injection current modulation, the VCSEL is scanned through a 10 cm-1 spectral window at megahertz rates - roughly 10 times the scanning range and 1000 times the scanning rate of a conventional diode laser. The VCSEL probes absorption lineshapes of the ~ 852 nm D2 transition of atomic Cs, seeded at ~ 5 ppm into the feedstock gases of a PDE. Using these lineshapes, detonated-gas temperature and pressure histories, spanning 2000 - 4000 K and 0.5 - 30 atm, respectively, are recorded with microsecond time response. The increasing availability of wavelength-agile diode lasers should support the development of similar sensors for other harsh flows, using other absorbers such as native H2O. PMID:19436388

  8. Motion of current filaments in avalanching PIN diodes

    Institute of Scientific and Technical Information of China (English)

    Ren Xingrong; Chai Changchun; Ma Zhenyang; Yang Yintang; Qiao Liping; Shi Chunlei; Ren Lihua

    2013-01-01

    The motion of current filaments in avalanching PIN diodes has been investigated in this paper by 2D transient numerical simulations.The simulation results show that the filament can move along the length of the PIN diode back and forth when the self-heating effect is considered.The voltage waveform varies periodically due to the motion of the filament.The filament motion is driven by the temperature gradient in the filament due to the negative temperature dependence of the impact ionization rates.Contrary to the traditional understanding that current filamentation is a potential cause of thermal destruction,it is shown in this paper that the thermally-driven motion of current filaments leads to the homogenization of temperature in the diode and is expected to have a positive influence on the failure threshold of the PIN diode.

  9. Diode-quad bridge for reactive transducers and FM discriminators

    Science.gov (United States)

    Harrison, D. R.; Dimeff, J.

    1972-01-01

    Diode-quad bridge circuit was developed for use with pressure-sensitive capacitive transducers, liquid-level measuring devices, proximity deflection sensors, and inductive displacement sensors. It may also be used as FM discriminator and as universal impedance bridge.

  10. Active stabilization of a diode laser injection lock.

    Science.gov (United States)

    Saxberg, Brendan; Plotkin-Swing, Benjamin; Gupta, Subhadeep

    2016-06-01

    We report on a device to electronically stabilize the optical injection lock of a semiconductor diode laser. Our technique uses as discriminator the peak height of the laser's transmission signal on a scanning Fabry-Perot cavity and feeds back to the diode current, thereby maintaining maximum optical power in the injected mode. A two-component feedback algorithm provides constant optimization of the injection lock, keeping it robust to slow thermal drifts and allowing fast recovery from sudden failures such as temporary occlusion of the injection beam. We demonstrate the successful performance of our stabilization method in a diode laser setup at 399 nm used for laser cooling of Yb atoms. The device eases the requirements on passive stabilization and can benefit any diode laser injection lock application, particularly those where several such locks are employed. PMID:27370428

  11. Particle-in-cell simulation of spherical plasma focus diode

    International Nuclear Information System (INIS)

    A self-magnetically insulated, three-dimensionally focused ion-beam diode, spherical plasma focus diode (SPFD), is studied by numerical simulation using a two-dimensional, electromagnetic, relativistic particle-in-cell computer code. The calculated results of the diode impedance, the ion-current efficiency, and the focusing characteristics of the ion beam are presented. These results, except the data of the ion-beam current, are in good agreement with the experimental results. Since the major ion deflection direction observed experimentally is also obtained in the simulation, it is attempted to optimize the SPFD by correcting the ion deflection with the shape of the diode gap by means of simulations. copyright 1995 American Institute of Physics

  12. Giant Thermal Rectification from Polyethylene Nanofiber Thermal Diodes

    CERN Document Server

    Zhang, Teng

    2015-01-01

    The realization of phononic computing is held hostage by the lack of high performance thermal devices. Here we show through theoretical analysis and molecular dynamics simulations that unprecedented thermal rectification factors (as large as 1.20) can be achieved utilizing the phase dependent thermal conductivity of polyethylene nanofibers. More importantly, such high thermal rectifications only need very small temperature differences (< 20 oC) across the device, which is a significant advantage over other thermal diodes which need temperature biases on the order of the operating temperature. Taking this into consideration, we show that the dimensionless temperature-scaled rectification factors of the polymer nanofiber diodes range from 12 to 25 - much larger than other thermal diodes (< 8). The polymer nanofiber thermal diode consists of a crystalline portion whose thermal conductivity is highly phase-sensitive and a cross-linked portion which has a stable phase. Nanoscale size effect can be utilized t...

  13. Enhanced performance thermal diode via thermal boundary resistance at nanoscale

    Science.gov (United States)

    Tovar-Padilla, M.; Licea-Jimenez, L.; Pérez-Garcia, S. A.; Alvarez-Quintana, J.

    2015-08-01

    Hypothetically, a thermal rectifier is a device which leads a greater heat flux in one direction than another one, similarly as the electrical diode works for the electrical flux. Here, a drastic increment in the rectification factor has been obtained in nanoscale layered thermal diodes due to the effect of thermal boundary resistance present on an asymmetrical stack of nanofilms. Measurements show a thermal rectification factor as large as 3.3 under a temperature bias well below 1 K, which is the biggest thermal rectification factor reported at room temperature compared to previously reported thermal diodes so far. According to the direction of the applied heat flux, the observed impact of the thermal boundary resistance on the device is manifested through the presence of an asymmetric temperature rise along the heat transfer axis. Such effect provides an alternative route for the development of high performance thermal diodes.

  14. Unmanned Aerial Vehicle Diode Laser Sensor for Methane Project

    Data.gov (United States)

    National Aeronautics and Space Administration — A compact, lightweight, and low power diode laser sensor will be developed for atmospheric methane detection on small unmanned aerial vehicles (UAVs). The physical...

  15. Femtosecond soliton diode on heterojunction Bragg-grating structure

    CERN Document Server

    Deng, Zhigui; Li, Hongji; Fu, Shenhe; Liu, Yikun; Xiang, Ying; Li, Yongyao

    2016-01-01

    We numerically propose a scheme for realizing an all-optical femtosecond soliton diode based on a tailored heterojunction Bragg grating, which is designed by two spatially asymmetric chirped cholesteric liquid crystals. Our simulations demonstrate that with the consideration of optical nonlinearity, not only the femtosecond diode effect with nonreciprocal transmission ratio up to 120 can be achieved, but also the optical pulse evolving into soliton which maintains its shape during propagation through the sample is observed. Further, the influence of pulse width and the carrier wavelength to the femtosecond diode effect is also discussed in detail. Our demonstrations might suggest a new direction for experimentally realizing the femtosecond soliton diode based on the cholesteric liquid crystals.

  16. Mechanisms of metallization degradation in high power diodes

    DEFF Research Database (Denmark)

    Brincker, Mads; Kristensen, Peter Kjær; Pedersen, Kristian Bonderup;

    2016-01-01

    investigate the metallization degradation by passive thermal cycling of unpackaged high-power diode chips in different controlled atmospheres. The electrical degradation of the metallization is characterized by sheet resistance measurements, while the microstructural damage is investigated by scanning...

  17. Passive fluidic diode for simple fluids using nested nanochannel structures

    Science.gov (United States)

    Mo, Jingwen; Li, Long; Wang, Jun; Li, Zhigang

    2016-03-01

    In this paper, we propose a moving part-free fluidic diode for simple fluids using nested nanochannels, which contain inner and outer channels of different lengths. Molecular dynamics simulations show that the fluidic diode accepts water flows in the forward direction and blocks flows in the backward direction in a wide range of pressure drops. The anisotropic flow rates are generated by the distinct activation pressures in different directions. In the forward direction, the activation pressure is low, which is determined by the infiltration pressure of the inner channel. In the backward direction, the activation pressure is quite high due to the capillary effects when flows are released from the inner to the outer channel. The pressure drop range for the fluidic diode can be varied by changing the channel size or surface wettability. The fluidic diode offers an alternative way for flow control in integrated micro- and nanofluidic devices.

  18. Active Stabilization of a Diode Laser Injection Lock

    CERN Document Server

    Saxberg, Brendan; Gupta, Subhadeep

    2016-01-01

    We report on a device to electronically stabilize the optical injection lock of a semiconductor diode laser. Our technique uses as discriminator the peak height of the laser's transmission signal on a scanning Fabry-Perot cavity and feeds back to the diode current, thereby maintaining maximum optical power in the injected mode. A two-component feedback algorithm provides constant optimization of the injection lock, keeping it robust to slow thermal drifts and allowing fast recovery from sudden failures such as temporary occlusion of the injection beam. We demonstrate the successful performance of our stabilization method in a diode laser setup at 399 nm used for laser cooling of Yb atoms. The device eases the requirements on passive stabilization and can benefit any diode laser injection lock application, particularly those where several such locks are employed.

  19. Active stabilization of a diode laser injection lock

    Science.gov (United States)

    Saxberg, Brendan; Plotkin-Swing, Benjamin; Gupta, Subhadeep

    2016-06-01

    We report on a device to electronically stabilize the optical injection lock of a semiconductor diode laser. Our technique uses as discriminator the peak height of the laser's transmission signal on a scanning Fabry-Perot cavity and feeds back to the diode current, thereby maintaining maximum optical power in the injected mode. A two-component feedback algorithm provides constant optimization of the injection lock, keeping it robust to slow thermal drifts and allowing fast recovery from sudden failures such as temporary occlusion of the injection beam. We demonstrate the successful performance of our stabilization method in a diode laser setup at 399 nm used for laser cooling of Yb atoms. The device eases the requirements on passive stabilization and can benefit any diode laser injection lock application, particularly those where several such locks are employed.

  20. Active graphene-silicon hybrid diode for terahertz waves

    Science.gov (United States)

    Li, Quan; Tian, Zhen; Zhang, Xueqian; Singh, Ranjan; Du, Liangliang; Gu, Jianqiang; Han, Jiaguang; Zhang, Weili

    2015-05-01

    Controlling the propagation properties of the terahertz waves in graphene holds great promise in enabling novel technologies for the convergence of electronics and photonics. A diode is a fundamental electronic device that allows the passage of current in just one direction based on the polarity of the applied voltage. With simultaneous optical and electrical excitations, we experimentally demonstrate an active diode for the terahertz waves consisting of a graphene-silicon hybrid film. The diode transmits terahertz waves when biased with a positive voltage while attenuates the wave under a low negative voltage, which can be seen as an analogue of an electronic semiconductor diode. Here, we obtain a large transmission modulation of 83% in the graphene-silicon hybrid film, which exhibits tremendous potential for applications in designing broadband terahertz modulators and switchable terahertz plasmonic and metamaterial devices.