WorldWideScience

Sample records for brightness plasma sputter

  1. Sputtering erosion in ion and plasma thrusters

    Science.gov (United States)

    Ray, Pradosh K.

    1995-08-01

    An experimental set-up to measure low-energy (below 1 keV) sputtering of materials is described. The materials to be bombarded represent ion thruster components as well as insulators used in the stationary plasma thruster. The sputtering takes place in a 9 inch diameter spherical vacuum chamber. Ions of argon, krypton and xenon are used to bombard the target materials. The sputtered neutral atoms are detected by a secondary neutral mass spectrometer (SNMS). Samples of copper, nickel, aluminum, silver and molybdenum are being sputtered initially to calibrate the spectrometer. The base pressure of the chamber is approximately 2 x 10(exp -9) Torr. the primary ion beam is generated by an ion gun which is capable of delivering ion currents in the range of 20 to 500 nA. The ion beam can be focused to a size approximately 1 mm in diameter. The mass spectrometer is positioned 10 mm from the target and at 90 deg angle to the primary ion beam direction. The ion beam impinges on the target at 45 deg. For sputtering of insulators, charge neutralization is performed by flooding the sample with electrons generated from an electron gun. Preliminary sputtering results, methods of calculating the instrument response function of the spectrometer and the relative sensitivity factors of the sputtered elements will be discussed.

  2. Spatiotemporal synchronization of drift waves in a magnetron sputtering plasma

    Czech Academy of Sciences Publication Activity Database

    Martines, E.; Zuin, M.; Cavazzana, R.; Adámek, Jiří; Antoni, V.; Serianni, G.; Spolaore, M.; Vianello, N.

    2014-01-01

    Roč. 21, č. 10 (2014), s. 102309-102309. ISSN 1070-664X Institutional support: RVO:61389021 Keywords : Drift waves * Magnetron sputtering plasma * Spatiotemporal synchronization Subject RIV: BL - Plasma and Gas Discharge Physics Impact factor: 2.142, year: 2014 http://dx.doi.org/10.1063/1.4898693

  3. Low-Pressure Plane Plasma Discharge Sputtering System

    International Nuclear Information System (INIS)

    Ultra-thin semiconductors and metal films have gained high technological importance in recent years. Sputtering is considered to be the preferable way for industrial thin semiconductor systems preparation. The main goal of our work was to develop a sputtering based method suitable for fine electronic and opto-electronic applications. The basic idea behind the developed method was to create a plane of gas discharge placed between the sputtering target and the growing film in order to enable the sputtered atoms to reach the substrate without collisions. Thus, the shape of the created plasma is viewed as a thin wall. The work was devoted to the modeling and practical implementation of the novel sputtering method. The mean free path of the gas molecules in the vacuum chamber is chosen as the critical parameter that defines the type of the sputtered particle transport and the level of the gas pressure used in the vacuum chamber. The properties and behavior of the plane plasma are considered under the conditions of ballistics (collisionless) and boundary transfer of the sputtered atoms (taking into account the diffusion part as well). The basic properties of the plane plasma were experimentally studied with the Langmuir probe introduced in plasma. The evaluation of electron temperature and ion concentrations was done using the Bohm approximation for collisionless conditions, which were created in the designed system. The measurements were taken in a gas pressure range from 0.2 mTorr up to 5 mTorr in various points of the vacuum chamber: along the plasma plane and in its vicinity. It was found that the electrons with the maximum temperature of about 7-7.5 eV occur along the plasma plane. Positive argon ion concentration was found to vary in the range from 3.5x1011 cm-3 to 6x1011 cm-3 on the plasma axis, depending on the gas pressure. The substrate in the novel system is completely protected from the plasma and the electron irradiation. The substrate temperature does not

  4. Plasma properties of RF magnetron sputtering system using Zn target

    International Nuclear Information System (INIS)

    In the present work, we investigate the fundamental properties of magnetron sputtering plasma using Zn target and its deposited Zn thin film. The magnetron sputtering plasma was produced using radio frequency (RF) power supply and Argon (Ar) as ambient gas. A Langmuir probe was used to collect the current from the plasma and from the current intensity, we calculate the electron density and electron temperature. The properties of Zn sputtering plasma at various discharge conditions were studied. At the RF power ranging from 20 to 100 W and gas pressure 5 mTorr, we found that the electron temperature was almost unchanged between 2-2.5 eV. On the other hand, the electron temperature increased drastically from 6×109 to 1×1010cm−3 when the discharge gas pressure increased from 5 to 10 mTorr. The electron microscope images show that the grain size of Zn thin film increase when the discharge power is increased. This may be due to the enhancement of plasma density and sputtered Zn density.

  5. Biopolymer nanostructures induced by plasma irradiation and metal sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Slepička, P., E-mail: petr.slepicka@vscht.cz [Department of Solid State Engineering, Institute of Chemical Technology, 166 28 Prague (Czech Republic); Juřík, P. [Department of Solid State Engineering, Institute of Chemical Technology, 166 28 Prague (Czech Republic); Malinský, P.; Macková, A. [Nuclear Physics Institute, Academy of Sciences of the Czech Republic, Rez, Prague 25068 (Czech Republic); Faculty of Science, J.E. Purkyně University, Ústí nad Labem (Czech Republic); Kasálková, N. Slepičková; Švorčík, V. [Department of Solid State Engineering, Institute of Chemical Technology, 166 28 Prague (Czech Republic)

    2014-08-01

    Modification based on polymer surface exposure to plasma treatment exhibits an easy and cheap technique for polymer surface nanostructuring. The influence of argon plasma treatment on biopolymer poly(L-lactide acid (PLLA) will be presented in this paper. The combination of Ar{sup +} ion irradiation, consequent sputter metallization (platinum) and thermal annealing of polymer surface will be summarized. The surface morphology was studied using atomic force microscopy. The Rutherford Backscattering Spectroscopy and X-ray Photoelectron Spectroscopy were used as analytical methods. The combination of plasma treatment with consequent thermal annealing and/or metal sputtering led to the change of surface morphology and its elemental ratio. The surface roughness and composition has been strongly influenced by the modification parameters and metal layer thickness. By plasma treatment of polymer surface combined with consequent annealing or metal deposition can be prepared materials applicable both in tissue engineering as cell carriers, but also in integrated circuit manufacturing.

  6. Biopolymer nanostructures induced by plasma irradiation and metal sputtering

    International Nuclear Information System (INIS)

    Modification based on polymer surface exposure to plasma treatment exhibits an easy and cheap technique for polymer surface nanostructuring. The influence of argon plasma treatment on biopolymer poly(L-lactide acid (PLLA) will be presented in this paper. The combination of Ar+ ion irradiation, consequent sputter metallization (platinum) and thermal annealing of polymer surface will be summarized. The surface morphology was studied using atomic force microscopy. The Rutherford Backscattering Spectroscopy and X-ray Photoelectron Spectroscopy were used as analytical methods. The combination of plasma treatment with consequent thermal annealing and/or metal sputtering led to the change of surface morphology and its elemental ratio. The surface roughness and composition has been strongly influenced by the modification parameters and metal layer thickness. By plasma treatment of polymer surface combined with consequent annealing or metal deposition can be prepared materials applicable both in tissue engineering as cell carriers, but also in integrated circuit manufacturing

  7. Arc generation from sputtering plasma-dielectric inclusion interactions

    International Nuclear Information System (INIS)

    Arcing during sputter deposition and etching is a significant cause of particle defect generation during device fabrication. In this article we report on the effect of aluminum oxide inclusion size, shape, and orientation on the propensity for arcing during sputtering of aluminum targets. The size, shape, and orientation of a dielectric inclusion plays a major role in determining the propensity for arcing and macroparticle emission. In previous studies we found that there is a critical inclusion size required for arcing to occur. In this article we used high-speed videos, electric arc detection, and measurements of particle defect density on wafers to study the effect of Al2O3 inclusion size, shape, and orientation on arc rate, intensity, and silicon wafer particle defect density. We found that the cross-sectional area of the inclusion exposed to the sputtering plasma is the critical parameter that determines the arc rate and rate of macroparticle emission. Analysis of the arc rate, particle defect density, and the intensity of the optical emission from the arcing plasma indicates that the critical aluminum oxide inclusion area for arcing is 0.22±0.1 mm2 when the sputtering plasma sheath dark-space λd, is 0.51 mm. Inclusions with areas greater than this critical value readily induce arcing and macroparticle ejection during sputtering. Inclusions below this critical size do not cause arcing or macroparticle ejection. When the inclusion major axis is longer than 2λd and lies perpendicular to the sputter erosion track tangent, the arcing activity increases significantly over the case where the inclusion major axis lies parallel to the erosion track tangent

  8. Experimental evidence of warm electron populations in magnetron sputtering plasmas

    International Nuclear Information System (INIS)

    This work report on the results obtained using the Langmuir probe (LP) measurements in high-power dc magnetron sputtering discharges. Data show clear evidence of two electron components, such as warm and bulk electrons, in the sputtering plasma in a magnetic trap. We have also used optical emission spectroscopy diagnostic method along with LP to investigate the plasma production. Data show that there is a presence of low-frequency oscillations in the 2–3 MHz range, which are expected to be generated by high-frequency waves. Analysis also suggests that the warm electrons, in the plasmas, can be formed due to the collisionless Landau damping of the bulk electrons

  9. Improvement in brightness of multicusp-plasma ion source

    Energy Technology Data Exchange (ETDEWEB)

    Ji, Q.; Jiang, X.; King, T-J.; Leung, K-N.; Standiford, K.; Wilde, S.B.

    2002-05-24

    The beam brightness of a multicusp-plasma ion source has been substantially improved by optimizing the source configuration and extractor geometry. The current density of a 2 keV He{sup +} beam extracted from a 7.5-cm-diameter source operating at 2.5 kW RF power is {approx}100 mA/cm{sup 2}, which is {approx}10 times larger than that of a beam extracted from a 5-cm-diameter source operating at 1 kW RF power. A smaller focused beam spot size is achieved with a counter-bored extractor instead of a conventional (''through-hole'') extractor, resulting another order of magnitude improvement in beam current density. Measured brightness can be as high as 440 A/cm{sup 2}Sr, which represents a 30 times improvement over prior work.

  10. Arc generation from sputtering plasma-dielectric inclusion interactions

    CERN Document Server

    Wickersham, C E J; Fan, J S

    2002-01-01

    Arcing during sputter deposition and etching is a significant cause of particle defect generation during device fabrication. In this article we report on the effect of aluminum oxide inclusion size, shape, and orientation on the propensity for arcing during sputtering of aluminum targets. The size, shape, and orientation of a dielectric inclusion plays a major role in determining the propensity for arcing and macroparticle emission. In previous studies we found that there is a critical inclusion size required for arcing to occur. In this article we used high-speed videos, electric arc detection, and measurements of particle defect density on wafers to study the effect of Al sub 2 O sub 3 inclusion size, shape, and orientation on arc rate, intensity, and silicon wafer particle defect density. We found that the cross-sectional area of the inclusion exposed to the sputtering plasma is the critical parameter that determines the arc rate and rate of macroparticle emission. Analysis of the arc rate, particle defect...

  11. Plasma sputtering system for deposition of thin film combinatorial libraries

    Science.gov (United States)

    Cooper, James S.; Zhang, Guanghai; McGinn, Paul J.

    2005-06-01

    The design of a plasma sputtering system for the deposition of combinatorial libraries is described. A rotating carousel is used to position shadow masks between the targets and the substrate. Multilayer films are built up by depositing sequentially through various masks. Postdeposition annealing is used to promote interdiffusion of the layered structures. Either discrete or compositional gradient libraries can be deposited in this system. Samples appropriate for characterization with a scanning electrochemical microscope or a multichannel microelectrode array system can be produced. The properties of some deposited Pt-Ru films for fuel cell applications are described.

  12. Plasma-ion-induced Sputtering And Heating Of Titan'S Atmosphere

    Science.gov (United States)

    Tucker, Orenthal J.

    2006-09-01

    Plasma-ion-induced sputtering and heating of Titan's atmosphere O.J. Tucker (1), R.E. Johnson (1), M. Michael (1), V.I. Shematovich (1,2) J.H. Luhmann (3), S.A. Ledvina (3) (1) University of Virginia, Charlottesville, VA 22904, USA (2) Institute of Astronomy RAS, Moscow 109017, Russia, (3) University of California, Berkeley, CA 94720, USA Titan is unique among the outer solar system icy satellites in having an atmosphere with a column density about ten times that of the Earth's atmosphere. Atmospheres equivalent in size similar to that at Titan would have been removed from the icy Galilean satellites by the plasma trapped in the Jovian magnetosphere (Johnson 2004). In this paper we describe the deposition of energy, the erosion and the expansion of the upper atmosphere of Titan using Direct Simulation Monte Carlo models (Shematovich et al. 2003; Michael et al. 2005). These calculations are used to calibrate semi-empirical models of atmospheric sputtering (Johnson 1994) that can be employed in interpreting Cassini data at Titan. It is shown that the globally averaged flux of magnetospheric and pickup ions deposit more energy in Titan's upper atmosphere than solar radiation. Using a number of plasma conditions, the temperature and density vs. altitude above the exobase and the rate of escape are calculated and compared to available Cassini data. References: Johnson, R.E. "Plasma-induced Sputtering of an Atmosphere" in Space Science Reviews 69 215-253 (1994). Johnson. R.E., “ The magnetospheric plasma-driven evolution of satellite atmospheres” Astrophys. J. 609, L99-L102 (2004). Michael M., R.E. Johnson, F. Leblanc, M. Liu, J.G. Luhmann, and V.I. Shematovich, "Ejection of nitrogen from Titan's atmosphere by magnetospheric ions and pick-up ions", Icarus 175, 263-267 (2005). Shematovich, V.I., R.E. Johnson, M. Michael, and J.G. Luhmann,"Nitrogen loss from Titan", JGR 108, No. E8, 5087, doi:10.1029/2003JE002094 (2003). 1

  13. Plasma-ion Induced Sputtering and Heating of Titan's Atmosphere

    Science.gov (United States)

    Johnson, R. E.; Tucker, O. J.

    2007-05-01

    Titan is unique among the outer solar system icy satellites in having an atmosphere with a column density about ten times that of the Earth's atmosphere and an atmospheric mass to solid mass ratio comparable to that of Venus. Atmospheres equivalent in size to that at Titan would have been removed from the icy Galilean satellites by the plasma trapped in the Jovian magnetosphere (Johnson 2004). Therefore, the use of Cassini data to determine the present erosion rate of Titan's atmosphere provides an important end point for studying the erosion and heating of planetary and satellite atmospheres by an ambient plasma. In this paper we describe the deposition of energy, the erosion and the expansion of the upper atmosphere of Titan using Direct Simulation Monte Carlo models (Shematovich et al. 2003; Michael et al. 2005; Michael and Johnson 2005). These calculations are used to calibrate semi-empirical models of atmospheric sputtering (Johnson 1994) that are used to interpret Cassini data at Titan. Using a number of plasma conditions, the temperature and density vs. altitude above the exobase and the rate of escape are calculated. References: Johnson, R.E. "Plasma-induced Sputtering of an Atmosphere" in Space Science Reviews 69 215-253 (1994). Johnson. R.E., " The magnetospheric plasmadriven evolution of satellite atmospheres" Astrophys. J. 609, L99-L102 (2004). Michael, M. and R.E. Johnson, "Energy deposition of pickup ions and heating of Titan's atmosphere", Planetary & Space Sci.53, 1510-1514 (2005). Michael M., R.E. Johnson, F. Leblanc, M. Liu, J.G. Luhmann, and V.I. Shematovich, "Ejection of nitrogen from Titan's atmosphere by magnetospheric ions and pick-up ions", Icarus 175, 263-267 (2005). Shematovich, V.I., R.E. Johnson, M. Michael, and J.G. Luhmann, "Nitrogen loss from Titan", JGR 108, No. E8, 5087, doi:10.1029/2003JE002094 (2003).

  14. A feedback model of magnetron sputtering plasmas in HIPIMS

    Science.gov (United States)

    Ross, A. E.; Ganesan, R.; Bilek, M. M. M.; McKenzie, D. R.

    2015-04-01

    We present a 1D feedback model that captures the essential elements of plasma pulse initiation and is useful for control and diagnostics of sputtering plasmas. Our model falls into the class of single-species population models with recruitment and time delay, which show no oscillatory behaviour. The model can reproduce essential features of published time-current traces from plasma discharges and is useful to determine the key parameters affecting the evolution of the discharge. We include the external circuit and we focus on the time evolution of the current as a function of the applied voltage and the plasma parameters. We find the necessity of a nonlinear loss term in the time-dependent plasma ion population to ensure a stable discharge, and we show that a higher secondary electron emission coefficient reduces the time delay for current initiation. We report that I-V characteristics in the plateau region, where it exists, fit a power curve of the form I = kVn, where n is influenced most strongly by the nonlinear loss term.

  15. Plasma potential mapping of high power impulse magnetron sputtering discharges

    Energy Technology Data Exchange (ETDEWEB)

    Rauch, Albert; Mendelsberg, Rueben J.; Sanders, Jason M.; Anders, Andre

    2011-12-20

    Pulsed emissive probe techniques have been used to determine the plasma potential distribution of high power impulse magnetron sputtering (HiPIMS) discharges. An unbalanced magnetron with a niobium target in argon was investigated for pulse length of 100 μs at a pulse repetition rate of 100 Hz, giving a peak current of 170 A. The probe data were taken with a time resolution of 20 ns and a spatial resolution of 1 mm. It is shown that the local plasma potential varies greatly in space and time. The lowest potential was found over the target’s racetrack, gradually reaching anode potential (ground) several centimeters away from the target. The magnetic pre-sheath exhibits a funnel-shaped plasma potential resulting in an electric field which accelerates ions toward the racetrack. In certain regions and times, the potential exhibits weak local maxima which allow for ion acceleration to the substrate. Knowledge of the local E and static B fields lets us derive the electrons’ E×B drift velocity, which is about 105 m/s and shows structures in space and time.

  16. Plasma properties during magnetron sputtering of lithium phosphorous oxynitride thin films

    DEFF Research Database (Denmark)

    Christiansen, Ane Sælland; Stamate, Eugen; Thydén, Karl Tor Sune;

    2015-01-01

    The nitrogen dissociation and plasma parameters during radio frequency sputtering of lithium phosphorus oxynitride thin films in nitrogen gas are investigated by mass appearance spectrometry, electrostatic probes and optical emission spectroscopy, and the results are correlated with electrochemic...

  17. Molecular Dynamics simulations of clusters and thin film growth in the context of plasma sputtering deposition

    OpenAIRE

    Xie, Lu; Brault, Pascal; Bauchire, Jean-Marc; Thomann, Anne-Lise; Bedra, Larbi

    2014-01-01

    International audience Carrying out molecular Dynamics simulations is a relevant way for understanding growth phenomena at the atomic scale. Initial conditions are defined for reproducing deposition conditions of plasma sputtering experiments. Two case studies are developed for highlighting the implementation of molecular dynamics simulations in the context of plasma sputtering deposition: ZrxCu1-x metallic glass and AlCoCrCuFeNi high entropy alloy thin films deposited onto silicon. Effect...

  18. The properties and performance of moisture/oxygen barrier layers deposited by remote plasma sputtering.

    OpenAIRE

    Brown, Hayley L.

    2015-01-01

    The development of flexible lightweight OLED devices requires oxygen/moisture barrier layer thin films with water vapour transmission rates (WVTR) of < 10-6 g/m2/day. This thesis reports on single and multilayer architecture barrier layers (mostly based on SiO2, Al2O3 and TiO2) deposited onto glass, Si and polymeric substrates using remote plasma sputtering. The reactive sputtering depositions were performed on Plasma Quest S500 based sputter systems and the morphology, nanostructure and comp...

  19. Plasma optical emission spectroscopy diagnostic during amorphous silicon thin films deposition by Rf sputtering technique

    International Nuclear Information System (INIS)

    This paper deals with the study of the glow discharge, used for amorphous silicon thin films deposition by Rf sputtering technique. The produced plasma is investigated by mean of the optical emission spectroscopy (OES) analysis. Different plasmas obtained with changing the gas pressure and Rf powers were analysed at different positions in the inter-electrode space. Emission lines from Ar, Si, Si+ and Ar+ were observed in the visible region. It was found that emission intensities of all the observed lines have a spatial Gaussian shape. The maximum intensity is located in the core of the plasma and decrease in the electrodes region. The ratio between the Si and Ar+ intensities (ISi/IAr+), in the target region, is proposed as a new tool to estimate the Ar sputtering yield. This ratio was compared to the theoretical calculated sputtering yield. The difference between these two quantities is exploited to determine the contribution of fast Ar neutrals in the sputtering process.

  20. View factor modeling of sputter-deposition on micron-scale-architectured surfaces exposed to plasma

    Science.gov (United States)

    Huerta, C. E.; Matlock, T. S.; Wirz, R. E.

    2016-03-01

    The sputter-deposition on surfaces exposed to plasma plays an important role in the erosion behavior and overall performance of a wide range of plasma devices. Plasma models in the low density, low energy plasma regime typically neglect micron-scale surface feature effects on the net sputter yield and erosion rate. The model discussed in this paper captures such surface architecture effects via a computationally efficient view factor model. The model compares well with experimental measurements of argon ion sputter yield from a nickel surface with a triangle wave geometry with peak heights in the hundreds of microns range. Further analysis with the model shows that increasing the surface pitch angle beyond about 45° can lead to significant decreases in the normalized net sputter yield for all simulated ion incident energies (i.e., 75, 100, 200, and 400 eV) for both smooth and roughened surfaces. At higher incident energies, smooth triangular surfaces exhibit a nonmonotonic trend in the normalized net sputter yield with surface pitch angle with a maximum yield above unity over a range of intermediate angles. The resulting increased erosion rate occurs because increased sputter yield due to the local ion incidence angle outweighs increased deposition due to the sputterant angular distribution. The model also compares well with experimentally observed radial expansion of protuberances (measuring tens of microns) in a nano-rod field exposed to an argon beam. The model captures the coalescence of sputterants at the protuberance sites and accurately illustrates the structure's expansion due to deposition from surrounding sputtering surfaces; these capabilities will be used for future studies into more complex surface architectures.

  1. Study on re-sputtering during CNx film deposition through spectroscopic diagnostics of plasma

    International Nuclear Information System (INIS)

    A nitrogen-carbon plasma was generated during the deposition of carbon nitride (CNx) thin films by pulsed laser ablation of a graphite target in a discharge nitrogen plasma, and the optical emission of the generated nitrogen-carbon plasma was measured for the diagnostics of the plasma and the characterization of the process of CNx film deposition. The nitrogen-carbon plasma was recognized to contain various species including nitrogen molecules and molecular ions excited in the ambient N2 gas, carbon atoms and atomic ions ablated from the graphite target and CN radicals. The temporal evolution and spatial distribution of the CN emission and their dependence on the substrate bias voltage show two groups of CN radicals flying in opposite directions. One represents the CN radicals formed as the products of the reactions occurring in the nitrogen-carbon plasma, revealing the reactive deposition of CNx film due to the reactive expansion of the ablation carbon plasma in the discharge nitrogen plasma and the effective formation of gaseous CN radicals as precursors for CNx film growth. The other one represents the CN radicals re-sputtered from the growing CNx film by energetic plasma species, evidencing the re-sputtering of the growing film accompanying film growth. And, the re-sputtering presents ion-induced sputtering features

  2. Plasma diagnostics of low pressure high power impulse magnetron sputtering assisted by electron cyclotron wave resonance plasma

    International Nuclear Information System (INIS)

    This paper reports on an investigation of the hybrid pulsed sputtering source based on the combination of electron cyclotron wave resonance (ECWR) inductively coupled plasma and high power impulse magnetron sputtering (HiPIMS) of a Ti target. The plasma source, operated in an Ar atmosphere at a very low pressure of 0.03 Pa, provides plasma where the major fraction of sputtered particles is ionized. It was found that ECWR assistance increases the electron temperature during the HiPIMS pulse. The discharge current and electron density can achieve their stable maximum 10 μs after the onset of the HiPIMS pulse. Further, a high concentration of double charged Ti++ with energies of up to 160 eV was detected. All of these facts were verified experimentally by time-resolved emission spectroscopy, retarding field analyzer measurement, Langmuir probe, and energy-resolved mass spectrometry.

  3. Nanostructure growth by helium plasma irradiation to tungsten in sputtering regime

    International Nuclear Information System (INIS)

    The formation of nanostructure on tungsten (W) surface due to Helium (He) plasma irradiation can be harmful for fusion reactors. Up to now, W nanostructure growth was investigated mainly without sputtering. Under sputtering regime, nanostructure growth competes with erosion due to sputtering. In this study, the nanostructure growth was investigated in the linear divertor simulator NAGDIS-II at incident ion energy range of 200–500 eV. The growth of nanostructures was investigated by experiments and calculations under the sputtering regime. With increasing incident ion energy, the thickness of nanostructured W layer saturated rapidly at a lower He fluence, resulting in thinner W nanostructured layer. The erosion rate of the top of the W nanostructured layer was obtained from the comparison with the numerical calculation

  4. Comparisons of physical and chemical sputtering in high density divertor plasmas with the Monte Carlo Impurity (MCI) transport model

    International Nuclear Information System (INIS)

    The MCI transport model was used to compare chemical and physical sputtering for a DIII-D divertor plasma near detachment. With physical sputtering alone the integrated carbon influx was 8.4 x 1019 neutral/s while physical plus chemical sputtering produced an integrated carbon influx of 1.7 x 1021 neutrals/s. The average carbon concentration in the computational volume increased from 0.012% with only physical sputtering to 0.182% with both chemical and physical sputtering. This increase in the carbon inventory produced more radiated power which is in better agreement with experimental measurements

  5. Sputtering of W and Al in D2/O2 plasma cleaning discharge

    International Nuclear Information System (INIS)

    Ion sputtering of W, Al, and Be (in several experiments) in a low pressure DC discharge in D2/O2 mixtures was studied. Ion energy was varied by electrical biasing of the samples from −100 to −600 V with respect to the plasma. At a bias of −100 V the sputtering yields peaked with an addition of 2–4 mol.% oxygen reaching (4 ± 0.5) × 10−3, (12 ± 1) × 10−3, and (20 ± 2) × 10−3 Me at./ion for W, Al, and Be, respectively. It is supposed that chemical nature of W, Al, and Be sputtering in D2/O2 plasma is caused by formation of weakly bound surface oxides and hydroxides under impinging of reactive deuterated ions (D3O+, D3+)

  6. Thin Film Formation of Gallium Nitride Using Plasma-Sputter Deposition Technique

    Directory of Open Access Journals (Sweden)

    R. Flauta

    2003-06-01

    Full Text Available The formation of gallium nitride (GaN thin film using plasma-sputter deposition technique has beenconfirmed. The GaN film deposited on a glass substrate at an optimum plasma condition has shown x-raydiffraction (XRD peaks at angles corresponding to that of (002 and (101 reflections of GaN. The remainingmaterial on the sputtering target exhibited XRD reflections corresponding to that of bulk GaN powder. Toimprove the system’s base pressure, a new UHV compatible system is being developed to minimize theimpurities in residual gases during deposition. The sputtering target configuration was altered to allow themonitoring of target temperature using a molybdenum (Mo holder, which is more stable against Gaamalgam formation than stainless steel.

  7. Characterization and modelling of microwave multi dipole plasmas. Application to multi dipolar plasma assisted sputtering

    International Nuclear Information System (INIS)

    also shown a better radial confinement with magnets exhibiting high length over diameter ratios. In addition, the numerical study corroborates the results of the experimental study, i.e. an ECR coupling region close to the equatorial plane of the magnet and not near the end of the coaxial microwave line. Finally, these results have been successfully applied to plasma assisted sputtering of targets allowing, in particular, their uniform erosion. (author)

  8. Experimental study of the discharge in the low pressure plasma jet sputtering system

    Czech Academy of Sciences Publication Activity Database

    Klusoň, J.; Kudrna, P.; Kolpaková, A.; Picková, I.; Hubička, Zdeněk; Tichý, M.

    2013-01-01

    Roč. 53, č. 1 (2013), s. 10-15. ISSN 0863-1042 Institutional support: RVO:68378271 Keywords : hollow cathode * plasma jet sputtering system * Langmuir probe Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.983, year: 2013

  9. A condition for scrape-off plasmas in self-sputtering

    International Nuclear Information System (INIS)

    Behavior of self-sputtered impurities from limiters or divertor neutralizer plates was investigated. The upper limit of boundary plasma temperature determined under the condition that the impurities of wall materials was not on increase is shown to be low. (author)

  10. Study of the plasma parameters in a high-current pulsed magnetron sputtering system

    International Nuclear Information System (INIS)

    Results are presented from experimental studies of the current-voltage characteristics and spatial and temporal parameters of the plasma in a high-current pulsed magnetron sputtering system with a 10-cm-diameter plane disk cathode. It is shown that the plasma density in such a system is three orders of magnitude higher than that in conventional dc magnetron discharges and reaches 1013 cm−3 at a distance of 250 mm from the cathode at a peak discharge current of 500 A. The plasma propagates from the cathode region at a velocity of 1 cm/μs in the axial direction and 0.25 cm/μs in the radial direction. Optical emission spectroscopy shows that the degree of plasma ionization increases severalfold with increasing discharge current, mainly at the expense of the sputtered material.

  11. Contamination by sputtering in mirror field electron cyclotron resonance microwave ion plasma

    International Nuclear Information System (INIS)

    Langmuir probe measurements, visual observation, and Rutherford backscattering spectrometry (RBS) have been used to investigate source chamber sputtering for electron cyclotron resonance (ECR) plasma systems operated with Ar, N2, and Cl2. Potentials in the source > 20eV combined with high plasma densities (>1012cm-3) led to source chamber sputtering and coating of the microwave entrance window. During Ar operation, the microwave entrance window coating caused significant absorption of incident microwave power and decreased source efficiency by as much as 40% in 11cm2sec-1. Cl2, operation did not result in microwave entrance window coating, however surface contamination from sputtering was detected. Operation of the source with an anodized aluminum liner was effective in reducing microwave entrance window coating but resulted in some heavy metal contamination due to sputtering of impurities in the liner itself. Also, checks with secondary ion mass spectrometry (SIMS) indicated some Al contamination from sputtering of the anodized aluminum liner material. Finally, a technique for in situ cleaning of the microwave entrance window was developed and expedited source contamination studies

  12. Nano-structuring of PTFE surface by plasma treatment, etching, and sputtering with gold

    International Nuclear Information System (INIS)

    Properties of pristine, plasma modified, and etched (by water and methanol) polytetrafluoroethylene (PTFE) were studied. Gold nanolayers sputtered on this modified PTFE have been also investigated. Contact angle, measured by goniometry, was studied as a function of plasma exposure and post-exposure aging times. Degradation of polymer chains was examined by etching of plasma modified PTFE in water or methanol. The amount of ablated and etched layer was measured by gravimetry. In the next step the pristine, plasma modified, and etched PTFE was sputtered with gold. Changes in surface morphology were observed using atomic force microscopy. Chemical structure of modified polymers was characterized by X-ray photoelectron spectroscopy (XPS). Surface chemistry of the samples was investigated by electrokinetic analysis. Sheet resistance of the gold layers was measured by two-point technique. The contact angle of the plasma modified PTFE decreases with increasing exposure time. The PTFE amount, ablated by the plasma treatment, increases with the plasma exposure time. XPS measurements proved that during the plasma treatment the PTFE macromolecular chains are degraded and oxidized and new –C–O–C–, –C=O, and –O–C=O groups are created in modified surface layer. Surface of the plasma modified PTFE is weakly soluble in methanol and intensively soluble in water. Zeta potential and XPS shown dramatic changes in PTFE surface chemistry after the plasma exposure, water etching, and gold deposition. When continuous gold layer is formed a rapid decrease of the sheet resistance of the gold layer is observed.

  13. PdAu/C catalysts prepared by plasma sputtering for the electro-oxidation of glycerol

    OpenAIRE

    Mougenot, Mathieu; Caillard, Amaël; Simoes, Mario; Baranton, Steve; Coutanceau, Christophe; Brault, Pascal

    2011-01-01

    Co-sputtered Pd0.7Au0.3 catalyst and alternate sputtered Pd0.35Au0.3Pd0.35 and Au0.15Pd0.7Au0.15 materials were prepared by plasma deposition of Au and Pd atoms on a carbon diffusion layer. Atomic composition and metal loadings were evaluated from EDX and RBS, respectively. The low amount of metal deposited and the resulting low metallic film thickness made TEM and XRD characterizations difficult to perform, therefore, catalyst microstructures and surface compositions were determined from ele...

  14. The diffusion transfer of sputtered atoms in plasma spraying on the internal cylindrical surface

    International Nuclear Information System (INIS)

    The sputtering of the surface of the solid by the glow discharge plasma is used widely in the electronics for the deposition of thin films. The sputtered atoms (SA), leaving the surface, clash with the gas atoms and the granules the energy. It is interesting to examine the effect of the condensation coefficient of the SA on the concentration of the SA in the cylindrical discharge volume and the fluxes of the SA to different areas of the wall. The solution of this problem for the case of the diffusion transfer of the SA is the subject of this work

  15. Brightness enhancement of plasma ion source by utilizing anode spot for nano applications

    Energy Technology Data Exchange (ETDEWEB)

    Park, Yeong-Shin; Lee, Yuna; Chung, Kyoung-Jae; Hwang, Y. S. [Department of Nuclear Engineering, Seoul National University, Seoul 151-742 (Korea, Republic of); Kim, Yoon-Jae [Samsung Electronics Co. Ltd., Gyeonggi 445-701 (Korea, Republic of); Park, Man-Jin [Research Institute of Nano Manufacturing System, Seoul National University of Science and Technology, Seoul 139-743 (Korea, Republic of); Moon, Dae Won [Nanobio Fusion Research Center, Korea Research Institute of Standards and Science, Daejeon 305-600 (Korea, Republic of)

    2012-02-15

    Anode spots are known as additional discharges on positively biased electrode immersed in plasmas. The anode spot plasma ion source (ASPIS) has been investigated as a high brightness ion source for nano applications such as focused ion beam (FIB) and nano medium energy ion scattering (nano-MEIS). The generation of anode spot is found to enhance brightness of ion beam since the anode spot increases plasma density near the extraction aperture. Brightness of the ASPIS has been estimated from measurement of emittance for total ion beam extracted through sub-mm aperture. The ASPIS is installed to the FIB system. Currents and diameters of the focused beams with/without anode spot are measured and compared. As the anode spot is turned on, the enhancement of beam current is observed at fixed diameter of the focused ion beam. Consequently, the brightness of the focused ion beam is enhanced as well. For argon ion beam, the maximum normalized brightness of 12 300 A/m{sup 2} SrV is acquired. The ASPIS is applied to nano-MEIS as well. The ASPIS is found to increase the beam current density and the power efficiency of the ion source for nano-MEIS. From the present study, it is shown that the ASPIS can enhance the performance of devices for nano applications.

  16. High plasma-flux elevated temperature sputtering of Cu-Li alloys

    International Nuclear Information System (INIS)

    Copper-lithium alloys ranging in composition from 3 to 12 at. % Li have been exposed to sputtering by 3 x 1016 - 6 x 1017 100 eV He+/cm2-sec at temperatures of 300 to 5000C at the UCLA PISCES plasma device. Weight loss and optical spectroscopy techniques were used to determine the sputtering-induced erosion of the binary alloys relative to pure copper. It was found that the weight loss of the alloy and the amount of copper in the plasma as measured by emission spectroscopy never exceeded that of pure copper and in some cases was reduced by a factor of five or more. Post-irradiation analysis by Auger electron spectroscopy and scanning electron microscopy show a correlation between lithium surface depletion, surface roughening, weight loss, and partial erosion yields as measured by plasma emission spectroscopy

  17. A sputtered zirconia primer for improved thermal shock resistance of plasma-sprayed ceramic turbine seals

    Science.gov (United States)

    Bill, R. C.; Sovey, J.; Allen, G. P.

    1981-01-01

    It is shown that the application of sputtered Y2O3-stabilized ZrO2 (YSZ) primer in plasma-sprayed YSZ ceramic-coated turbine blades results in an improvement, by a factor of 5-6, in the thermal shock life of specimens with a sprayed, porous, Ni-Cr-Al-Y intermediate layer. Species with and without the primer were found to be able to survive 1000 cycles when the intermediate layer was used, but reduced laminar cracking was observed in the specimen with the primer. It is suggested that the sputtered YZS primer-induced properties are due to (1) more effective wetting and adherence of the plasma-sprayed YZS particles to the primer, and (2) the primer's retardation of impinging, molten plasma sprayed particles solidification rates, which result in a less detrimental residual stress distribution.

  18. Development Of Sputtering Models For Fluids-Based Plasma Simulation Codes

    Science.gov (United States)

    Veitzer, Seth; Beckwith, Kristian; Stoltz, Peter

    2015-09-01

    Rf-driven plasma devices such as ion sources and plasma processing devices for many industrial and research applications benefit from detailed numerical modeling. Simulation of these devices using explicit PIC codes is difficult due to inherent separations of time and spatial scales. One alternative type of model is fluid-based codes coupled with electromagnetics, that are applicable to modeling higher-density plasmas in the time domain, but can relax time step requirements. To accurately model plasma-surface processes, such as physical sputtering and secondary electron emission, kinetic particle models have been developed, where particles are emitted from a material surface due to plasma ion bombardment. In fluid models plasma properties are defined on a cell-by-cell basis, and distributions for individual particle properties are assumed. This adds a complexity to surface process modeling, which we describe here. We describe the implementation of sputtering models into the hydrodynamic plasma simulation code USim, as well as methods to improve the accuracy of fluids-based simulation of plasmas-surface interactions by better modeling of heat fluxes. This work was performed under the auspices of the Department of Energy, Office of Basic Energy Sciences Award #DE-SC0009585.

  19. A sputtered zirconia primer for improved thermal shock resistance of plasma sprayed ceramic turbine seals

    Science.gov (United States)

    Bill, R. C.; Sovey, J.; Allen, G. P.

    1981-01-01

    The development of plasma-sprayed yttria stabilized zirconia (YSZ) ceramic turbine blade tip seal components is discussed. The YSZ layers are quite thick (0.040 to 0.090 in.). The service potential of seal components with such thick ceramic layers is cyclic thermal shock limited. The most usual failure mode is ceramic layer delamination at or very near the interface between the plasma sprayed YSZ layer and the NiCrAlY bondcoat. Deposition of a thin RF sputtered YSZ primer to the bondcoat prior to deposition of the thick plasma sprayed YSZ layer was found to reduce laminar cracking in cyclic thermal shock testing. The cyclic thermal shock life of one ceramic seal design was increased by a factor of 5 to 6 when the sputtered YSZ primer was incorporated. A model based on thermal response of plasma sprayed YSZ particles impinging on the bondcoat surface with and without the sputtered YSZ primer provides a basis for understanding the function of the primer.

  20. Study of Au- production in a plasma-sputter type negative ion source

    International Nuclear Information System (INIS)

    A negative ion source of plasma-sputter type has been constructed for the purpose of studying physical processes which take place in the ion source. Negative ions of gold are produced on the gold target which is immersed in an argon discharge plasma and biased negatively with respect to the plasma. The work function of the target surface was lowered by the deposition of Cs on the target. An in-situ method has been developed to determine the work function of the target surface in the ion source under discharge conditions. The observed minimum work function of a cesiated gold surface in an argon plasma was 1.3 eV, when the negative ion production rate took the maximum value. The production rate increased monotonically and saturated when the surface work function was reduced from 1.9 eV to 1.3 eV. The dependence of Au- production rate on the incident ion energy and on the number of the incident ion was studied. From the experimental results, it is shown that the sputtering process is an important physical process for the negative ion production in the plasma-sputter type negative ion source. The energy distribution function was also measured. When the bias voltage was smaller than 280 V, the high energy component in the distribution decreased as the target voltage was decreased. Therefore, the energy spread ΔE, of the observed negative ion energy distribution also decreased. This tendency is also seen in the energy spectrum of Cu atoms sputtered in normal direction by Ar+ ions. (J.P.N.)

  1. Bright high-order harmonic generation with controllable polarization from a relativistic plasma mirror

    CERN Document Server

    Chen, Zi-Yu

    2016-01-01

    Ultrafast extreme ultraviolet (XUV) sources with controllable polarization state are powerful tools in investigating not only structural and electronic, but also magnetic properties of materials. However, such light sources are still limited to a few free electron laser facilities and very recently to high-order harmonic generation (HHG) from noble gases. Here we propose and numerically demonstrate a new laser-plasma scheme to generate bright XUV pulses with fully controlled polarization. An elliptically polarized laser pulse is obliquely incident on a plasma surface. The reflected radiation contains trains and isolated circularly or highly elliptically polarized attosecond XUV pulses. The harmonic polarization state is fully controlled by the laser-plasma parameters. The mechanism can be explained within the relativistically oscillating mirror model. This scheme opens a practical and promising route to generate bright attosecond XUV pulses with desirable ellipticities in a straightforward and efficient way f...

  2. Properties of AlN films deposited by reactive ion-plasma sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Bert, N. A.; Bondarev, A. D.; Zolotarev, V. V.; Kirilenko, D. A.; Lubyanskiy, Ya. V.; Lyutetskiy, A. V.; Slipchenko, S. O.; Petrunov, A. N.; Pikhtin, N. A., E-mail: nike@hpld.ioffe.ru; Ayusheva, K. R.; Arsentyev, I. N.; Tarasov, I. S. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)

    2015-10-15

    The properties of SiO{sub 2}, Al{sub 2}O{sub 3}, and AlN dielectric coatings deposited by reactive ion-plasma sputtering are studied. The refractive indices of the dielectric coatings are determined by optical ellipsometry. It is shown that aluminum nitride is the optimal material for achieving maximum illumination of the output mirror of a semiconductor laser. A crystalline phase with a hexagonal atomic lattice and oxygen content of up to 10 at % is found by transmission electron microscopy in the aluminum-nitride films. It is found that a decrease in the concentration of residual oxygen in the chamber of the reactive ion-plasma sputtering installation makes it possible to eliminate the appearance of vertical pores in the bulk of the aluminum-nitride film.

  3. Remote plasma sputtering of indium tin oxide thin films for large area flexible electronics

    International Nuclear Information System (INIS)

    Indium tin oxide (ITO) thin films with a specific resistivity of 3.5 × 10−4 Ω cm and average visible light transmission (VLT) of 90% have been reactively sputtered onto A4 Polyethylene terephthalate (PET), glass and silicon substrates using a remote plasma sputtering system. This system offers independent control of the plasma density and the target power enabling the effect of the plasma on ITO properties to be studied. Characterization of ITO on glass and silicon has shown that increasing the plasma density gives rise to a decrease in the specific resistivity and an increase in the optical band gap of the ITO films. Samples deposited at plasma powers of 1.5 kW, 2.0 kW and 2.5 kW and optimized oxygen flow rates exhibited specific resistivity values of 3.8 × 10−4 Ω cm, 3.7 × 10−4 Ω cm and 3.5 × 10−4 Ω cm and optical gaps of 3.48 eV, 3.51 eV and 3.78 eV respectively. The increase in plasma density also influenced the crystalline texture and the VLT increased from 70 to 95%, indicating that more oxygen is being incorporated into the growing film. It has been shown that the remote plasma sputter technique can be used in an in-line process to produce uniform ITO coatings on PET with specific resistivities of between 3.5 × 10−4 and 4.5 × 10−4 Ω cm and optical transmission of greater than 85% over substrate widths of up to 30 cm.

  4. Experimental investigation of quasiperiodic-chaotic-quasiperiodic-chaotic transition in a direct current magnetron sputtering plasma

    Energy Technology Data Exchange (ETDEWEB)

    Sabavath, Gopi Kishan; Banerjee, I.; Mahapatra, S. K., E-mail: skmahapatra@bitmesra.ac.in [Plasma Laboratory, Department of Physics, Birla Institute of Technology-Mesra, Ranchi 835215 (India); Shaw, Pankaj Kumar; Sekar Iyengar, A. N. [Plasma Physics Division, Saha Institute of Nuclear Physics, 1/AF, Bidhannagar, Kolkata 700064 (India)

    2015-08-15

    Floating potential fluctuations from a direct current magnetron sputtering plasma have been analysed using time series analysis techniques like phase space plots, power spectra, frequency bifurcation plot, etc. The system exhibits quasiperiodic-chaotic-quasiperiodic-chaotic transitions as the discharge voltage was increased. The transitions of the fluctuations, quantified using the largest Lyapunov exponent, have been corroborated by Hurst exponent and the Shannon entropy. The Shannon entropy is high for quasiperiodic and low for chaotic oscillations.

  5. SiOx layer formation during plasma sputtering of Si and SiO2 targets

    International Nuclear Information System (INIS)

    Deposition of SiOx layers of variable composition onto silicon wafers was performed by co-sputtering of spaced Si and SiO2 targets in argon plasma. Coordinate dependences of the thickness and refractive index of separately deposited Si and SiO2 layers and the SiOx layer grown during co-sputtering of targets were determined using optical techniques. It was shown that the SiOx layer composition is not equal to a simple sum of thicknesses of separately deposited Si and SiO2 layers. The coordinate dependences of the Si and SiO2 layer thicknesses were calculated. To fit the calculated and experimental data, it is necessary to assume that no less than 10% of silicon is converted to dioxide during co-sputtering. A comparison of the coordinate dependences of the IR absorbance in SiO2 and SiOx layers with experimental ellipsometric data confirmed the presence of excess oxygen in the SiOx layer. Taking into account such partial oxidation of sputtered silicon, composition isolines in the substrate plane were calculated. After annealing of the SiOx layer at 1200oC, photoluminescence was observed in a wafer area predicted by calculations, which was caused by the formation of quantum-size Si nanocrystallites. The photoluminescence intensity was maximum at x = 1.78 ± 0.3, which is close to the composition optimum for ion-beam synthesis of nanocrystals.

  6. Structuring of DLC:Ag nanocomposite thin films employing plasma chemical etching and ion sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Tamulevičius, Tomas, E-mail: Tomas.Tamulevicius@ktu.lt; Tamulevičienė, Asta; Virganavičius, Dainius; Vasiliauskas, Andrius; Kopustinskas, Vitoldas; Meškinis, Šarūnas; Tamulevičius, Sigitas

    2014-12-15

    Highlights: • CF{sub 4}/O{sub 2} dry etching of DLC:Ag films revealed the embedded Ag nanoparticles. • Plasma processed samples with more than 5 at.% Ag demonstrated Ostwald ripening. • 4 μm period patterns in aluminum and photoresist were imposed in the DLC:Ag film. • Different micro patterns are formed depending on the selected processing route. - Abstract: We analyze structuring effects of diamond like carbon based silver nanocomposite (DLC:Ag) thin films by CF{sub 4}/O{sub 2} plasma chemical etching and Ar{sup +} sputtering. DLC:Ag films were deposited employing unbalanced reactive magnetron sputtering of silver target with Ar{sup +} in C{sub 2}H{sub 2} gas atmosphere. Films with different silver content (0.6–12.9 at.%) were analyzed. The films (as deposited and exposed to plasma chemical etching) were characterized employing scanning electron microscopy and energy dispersive X-ray analysis (SEM/EDS), optical microscopy, ultraviolet–visible light (UV–VIS) spectroscopy and Fourier transform infrared (FTIR) spectroscopy. After deposition, the films were plasma chemically etched in CF{sub 4}/O{sub 2} mixture plasma for 2–6 min. It is shown that optical properties of thin films and silver nano particle size distribution can be tailored during deposition changing the magnetron current and C{sub 2}H{sub 2}/Ar ratio or during following plasma chemical etching. The plasma etching enabled to reveal the silver filler particle size distribution and to control silver content on the surface that was found to be dependent on Ostwald ripening process of silver nano-clusters. Employing contact lithography and 4 μm period mask in photoresist or aluminum the films were patterned employing CF{sub 4}/O{sub 2} mixture plasma chemical etching, direct Ar{sup +} sputtering or combined etching processes. It is shown that different processing recipes result in different final grating structures. Selective carbon etching in CF{sub 4}/O{sub 2} gas mixture with

  7. A study of the plasma electronegativity in an argonoxygen pulsed-dc sputter magnetron

    OpenAIRE

    You, SD; Dodd, R; Edwards, A; Bradley, JW

    2010-01-01

    Abstract Using Langmuir probe-assisted laser photodetachment, the temporal evolution of the O- density has been determined in the bulk plasma of a unipolar pulsed-dc magnetron. The source was operated in reactive mode, at a fixed nominal on-time power of 100 W, sputtering Ti in argon-oxygen atmospheres at 1.3 Pa pressure, but over a variation of duty cycles from 5 to 50 % and oxygen partial pressures of 10 and 50 % of the total pressure. In the plasma on-time, for all duty cycles the negat...

  8. Structuring of DLC:Ag nanocomposite thin films employing plasma chemical etching and ion sputtering

    International Nuclear Information System (INIS)

    Highlights: • CF4/O2 dry etching of DLC:Ag films revealed the embedded Ag nanoparticles. • Plasma processed samples with more than 5 at.% Ag demonstrated Ostwald ripening. • 4 μm period patterns in aluminum and photoresist were imposed in the DLC:Ag film. • Different micro patterns are formed depending on the selected processing route. - Abstract: We analyze structuring effects of diamond like carbon based silver nanocomposite (DLC:Ag) thin films by CF4/O2 plasma chemical etching and Ar+ sputtering. DLC:Ag films were deposited employing unbalanced reactive magnetron sputtering of silver target with Ar+ in C2H2 gas atmosphere. Films with different silver content (0.6–12.9 at.%) were analyzed. The films (as deposited and exposed to plasma chemical etching) were characterized employing scanning electron microscopy and energy dispersive X-ray analysis (SEM/EDS), optical microscopy, ultraviolet–visible light (UV–VIS) spectroscopy and Fourier transform infrared (FTIR) spectroscopy. After deposition, the films were plasma chemically etched in CF4/O2 mixture plasma for 2–6 min. It is shown that optical properties of thin films and silver nano particle size distribution can be tailored during deposition changing the magnetron current and C2H2/Ar ratio or during following plasma chemical etching. The plasma etching enabled to reveal the silver filler particle size distribution and to control silver content on the surface that was found to be dependent on Ostwald ripening process of silver nano-clusters. Employing contact lithography and 4 μm period mask in photoresist or aluminum the films were patterned employing CF4/O2 mixture plasma chemical etching, direct Ar+ sputtering or combined etching processes. It is shown that different processing recipes result in different final grating structures. Selective carbon etching in CF4/O2 gas mixture with photoresist mask revealed micrometer range lines of silver nanoparticles, while Ar+ sputtering and combined

  9. Evidence for breathing modes in direct current, pulsed, and high power impulse magnetron sputtering plasmas

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Yuchen [State Key Lab for Materials Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074 (China); Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720 (United States); Zhou, Xue [Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720 (United States); Department of Electrical Engineering, Harbin Institute of Technology, Harbin 150000 (China); Liu, Jason X. [Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720 (United States); Department of Physics, University of California, Berkeley, Berkeley, California 94720 (United States); Anders, André, E-mail: aanders@lbl.gov [Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720 (United States)

    2016-01-18

    We present evidence for breathing modes in magnetron sputtering plasmas: periodic axial variations of plasma parameters with characteristic frequencies between 10 and 100 kHz. A set of azimuthally distributed probes shows synchronous oscillations of the floating potential. They appear most clearly when considering the intermediate current regime in which the direction of azimuthal spoke motion changes. Breathing oscillations were found to be superimposed on azimuthal spoke motion. Depending on pressure and current, one can also find a regime of chaotic fluctuations and one of stable discharges, the latter at high current. A pressure-current phase diagram for the different situations is proposed.

  10. Evidence for breathing modes in direct current, pulsed, and high power impulse magnetron sputtering plasmas

    International Nuclear Information System (INIS)

    We present evidence for breathing modes in magnetron sputtering plasmas: periodic axial variations of plasma parameters with characteristic frequencies between 10 and 100 kHz. A set of azimuthally distributed probes shows synchronous oscillations of the floating potential. They appear most clearly when considering the intermediate current regime in which the direction of azimuthal spoke motion changes. Breathing oscillations were found to be superimposed on azimuthal spoke motion. Depending on pressure and current, one can also find a regime of chaotic fluctuations and one of stable discharges, the latter at high current. A pressure-current phase diagram for the different situations is proposed

  11. Control of dispersed-phase temperature in plasma flows by the spectral-brightness pyrometry method

    Science.gov (United States)

    Dolmatov, A. V.; Gulyaev, I. P.; Gulyaev, P. Yu; Iordan, V. I.

    2016-02-01

    In the present work, we propose a new method for measuring the distribution of temperature in the ensembles of condensed-phase particles in plasma spray flows. Interrelation between the spectral temperature of the particles and the distribution of camera brightness signal is revealed. The established inter-relation enables an in-situ calibration of measuring instruments using the objects under study. The spectral-brightness pyrometry method was approbated on a Plazer plasma-arc wire spraying facility at the Paton Institute of Electrical Welding (Ukrainian Academy of Sciences, Kiev) and on the Thermoplasma 50-1 powder spraying facility at the Institute of Theoretical and Applied Mechanics (Russian Academy of Sciences, Siberian Branch, Novosibirsk). The work was supported by the Russian Foundation for Basic Research (Grants Nos. 14-08-90428 and 15-48-00100).

  12. Biopolymer nanostructures induced by plasma irradiation and metal sputtering

    Czech Academy of Sciences Publication Activity Database

    Slepička, P.; Juřík, P.; Malinský, Petr; Macková, Anna; Kasálková-Slepičková, N.; Švorčík, V.

    2014-01-01

    Roč. 332, 7-10 (2014), s. 7-10. ISSN 0168-583X. [21st International Conference on Ion Beam Analysis (IBA). Seattle, 23.06.2013-28.06.2013] R&D Projects: GA ČR ga13-06609S; GA ČR(CZ) GAP108/10/1106 Institutional support: RVO:61389005 Keywords : Biopolymer * plasma * surface morphology * RBS * Ripple pattern Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 1.124, year: 2014

  13. Optical Emission Spectroscopy of Low-Discharge-Power Magnetron Sputtering Plasmas Using Pure Tungsten Target

    Science.gov (United States)

    Matsunaga, Takeaki; Ohshima, Tamiko; Kawasaki, Hiroharu; Kaneko, Tatsuya; Yagyu, Yoshihito; Suda, Yoshiaki

    2010-08-01

    To study the mechanism of a tungsten oxide (WO3) thin film using an RF magnetron sputtering method, optical emission spectroscopic (OES) measurements for the RF plasma of a pure W target have been performed. We also examined the crystalline structure and atomic composition rate of the prepared thin film using X-ray photoelectron spectroscopy (XPS). Experimental results indicate that Ar I emission peak intensity slightly increased with increasing Ar gas mixture. On the other hand, W I emission peak intensity rapidly increased with increasing Ar gas mixture. The increase rates of these two emission peak intensities are different, which may be due to the difference in emission mechanism. O I emission peak intensity decreased with increasing Ar gas mixture, indicating that O I emission intensity increased with increasing O2 gas mixture. Electron density and deposition rate increased with increasing Ar gas mixture, and their dependences on Ar gas mixture were very similar to that of Ar I emission. XPS analyses indicate that the oxidation ratio of the prepared film was slightly decreased with decreasing Ar gas mixture. These results suggest that the W sources of the WO3 film on the substrate are W atoms and WOx molecules sputtered from the W target. The plasma phase reaction between W and O atoms and the intermediate-energy O atomic and/or O2 molecular reaction on the surface of the substrate are considered to be important for WO3 film production in low-energy magnetron sputtering deposition.

  14. Hydrogen and helium trapping in tungsten deposition layers formed by RF plasma sputtering

    International Nuclear Information System (INIS)

    Understanding of tritium behavior in plasma facing materials is an important issue for fusion reactor from viewpoints of fuel control and radiation safety. Tungsten is used as a plasma facing material in the divertor region of ITER. However, investigation of hydrogen isotope behavior in tungsten deposition layer is not sufficient so far. It is also necessary to evaluate an effect of helium on a formation of deposition layer and an accumulation of hydrogen isotopes because helium generated by fusion reaction exists in fusion plasma. In this study, tungsten deposition layers were formed by sputtering method using hydrogen and helium RF plasma. An erosion rate and a deposition rate of tungsten were estimated by weight measurement. Hydrogen and helium retention were investigated by thermal desorption method. Tungsten deposition was performed using a capacitively-coupled RF plasma device equipped with parallel-plate electrodes. A tungsten target was mounted on one electrode which is supplied with RF power at 200 W. Tungsten substrates were mounted on the other electrode which is at ground potential. The plasma discharge was continued for 120 hours where pressure of hydrogen or helium was controlled to be 10 Pa. The amounts of hydrogen and helium released from deposition layers was quantified by a gas chromatograph. The erosion rate of target tungsten under helium plasma was estimated to be 1.8 times larger than that under hydrogen plasma. The deposition rate on tungsten substrate under helium plasma was estimated to be 4.1 times larger than that under hydrogen plasma. Atomic ratio of hydrogen to tungsten in a deposition layer formed by hydrogen plasma was estimated to be 0.17 by heating to 600 oC. From a deposition layer formed by helium plasma, not only helium but also hydrogen was released by heating to 500 oC. Atomic ratios of helium and hydrogen to tungsten were estimated to be 0.080 and 0.075, respectively. The trapped hydrogen is probably impurity hydrogen emitted

  15. Low temperature remote plasma sputtering of indium tin oxide for flexible display applications

    International Nuclear Information System (INIS)

    Tin doped indium oxide (ITO) has been directly deposited onto a variety of flexible materials by a reactive sputtering technique that utilises a remotely generated, high density plasma. This technique, known as high target utilisation sputtering (HiTUS), allows for the high rate deposition of good quality ITO films onto polymeric materials with no substrate heating or post deposition annealing. Coatings with a resistivity of 3.8 x 10-4 Ωcm and an average visible transmission of greater than 90% have been deposited onto PEN and PET substrate materials at a deposition rate of 70 nm/min. The electrical and optical properties are retained when the coatings are flexed through a 1.0 cm bend radius, making them of interest for flexible display applications.

  16. Composite materials obtained by the ion-plasma sputtering of metal compound coatings on polymer films

    Science.gov (United States)

    Khlebnikov, Nikolai; Polyakov, Evgenii; Borisov, Sergei; Barashev, Nikolai; Biramov, Emir; Maltceva, Anastasia; Vereshchagin, Artem; Khartov, Stas; Voronin, Anton

    2016-01-01

    In this article, the principle and examples composite materials obtained by deposition of metal compound coatings on polymer film substrates by the ion-plasma sputtering method are presented. A synergistic effect is to obtain the materials with structural properties of the polymer substrate and the surface properties of the metal deposited coatings. The technology of sputtering of TiN coatings of various thicknesses on polyethylene terephthalate films is discussed. The obtained composites are characterized by X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy dispersive X-ray spectroscopy (EDX), atomic force microscopy (AFM), and scanning tunneling microscopy (STM) is shown. The examples of application of this method, such as receiving nanocomposite track membranes and flexible transparent electrodes, are considered.

  17. Study on re-sputtering during CN{sub x} film deposition through spectroscopic diagnostics of plasma

    Energy Technology Data Exchange (ETDEWEB)

    Liang, Peipei; Yang, Xu; Li, Hui; Cai, Hua [Department of Optical Science and Engineering, Fudan University, Shanghai 200433 (China); Sun, Jian; Xu, Ning [Department of Optical Science and Engineering, Fudan University, Shanghai 200433 (China); Shanghai Engineering Research Center of Ultra-Precision Optical Manufacturing, Fudan University, Shanghai 200433 (China); Wu, Jiada, E-mail: jdwu@fudan.edu.cn [Department of Optical Science and Engineering, Fudan University, Shanghai 200433 (China); Shanghai Engineering Research Center of Ultra-Precision Optical Manufacturing, Fudan University, Shanghai 200433 (China); Engineering Research Center of Advanced Lighting Technology, Ministry of Education, Fudan University, Shanghai 200433 (China)

    2015-10-15

    A nitrogen-carbon plasma was generated during the deposition of carbon nitride (CN{sub x}) thin films by pulsed laser ablation of a graphite target in a discharge nitrogen plasma, and the optical emission of the generated nitrogen-carbon plasma was measured for the diagnostics of the plasma and the characterization of the process of CN{sub x} film deposition. The nitrogen-carbon plasma was recognized to contain various species including nitrogen molecules and molecular ions excited in the ambient N{sub 2} gas, carbon atoms and atomic ions ablated from the graphite target and CN radicals. The temporal evolution and spatial distribution of the CN emission and their dependence on the substrate bias voltage show two groups of CN radicals flying in opposite directions. One represents the CN radicals formed as the products of the reactions occurring in the nitrogen-carbon plasma, revealing the reactive deposition of CN{sub x} film due to the reactive expansion of the ablation carbon plasma in the discharge nitrogen plasma and the effective formation of gaseous CN radicals as precursors for CN{sub x} film growth. The other one represents the CN radicals re-sputtered from the growing CN{sub x} film by energetic plasma species, evidencing the re-sputtering of the growing film accompanying film growth. And, the re-sputtering presents ion-induced sputtering features.

  18. Plasma induced sputtering yield and backscattering for ITER-relevant materials as calculated by TRIM

    Science.gov (United States)

    Kumar, P.; Ahmad, A.; Carrère, M.

    2015-07-01

    In this paper, we report an analytical model to estimate the variation of the yield (and hence the pressure) from sputtering, elastic collisions, and backscattering on a surface exposed to International Thermonuclear Experimental Reactor-relevant plasmas. To study the yield and the pressure exerted on the surfaces of carbon (C), silicon (Si) and tungsten (W) due to plasma exposure, the irradiation of H, Ar and Xe ions at normal incidence was considered. Transport and range of ions in matter simulations were done to calculate the backscattering/sputtering yields and the energies on the surfaces. The calculations are significant for the optimization of material facing the plasma in future fusion reactors where erosion and long term operation are key issues. The results show that yield increases with the increase of ion energy. The carbon surface is the least affected to exposure of the plasma. In the chosen ion energy range (0-1 keV), the simulations/calculations (for Ar ion incident on Si and W) are in good agreement with published experimental results.

  19. Radioactive sputter cathodes for {sup 32}P plasma-based ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Fortin, M.A. [INRS-EMT (Universite du Quebec), 1650 boul. Lionel Boulet, Varennes, Quebec, J3X 1S2 (Canada)]. E-mail: fortin@bms.uu.se; Paynter, R.W. [INRS-EMT (Universite du Quebec), 1650 boul. Lionel Boulet, Varennes, Quebec, J3X 1S2 (Canada); Sarkissian, A. [Plasmionique Inc., 1650 boul. Lionel Boulet, Varennes, Quebec, J3X 1S2 (Canada); Stansfield, B.L. [INRS-EMT (Universite du Quebec), 1650 boul. Lionel Boulet, Varennes, Quebec, J3X 1S2 (Canada)

    2006-05-15

    The development of clinical treatments involving the use of beta-emitting millimetric and sub-millimetric devices has been a continuing trend in nuclear medicine. Implanted a few nanometers below the surface of endovascular implants, seeds or beads, beta-emitting radioisotopes can be used in a variety of biomedical applications. Recently, new technologies have emerged to enable the rapid and efficient activation of such devices. A pulsed, coaxial electron cyclotron resonance plasma reactor was designed and tested to demonstrate the feasibility of plasma-based radioactive ion implantation (PBRII). It has been shown that such plasma reactors allow for the implantation of radioisotopes ({sup 32}P) into biomedical devices with higher efficiencies than those obtained with conventional ion beams. Fragments containing radioactive atoms are produced in the implanter by means of a negatively biased solid sputter cathode that is inserted into an argon plasma. Dilute orthophosphoric acid solutions (H{sub 3} {sup 32}PO{sub 4}) are used for the fabrication of flat sputter targets, since they offer a high radioisotope content. However, the aggregation of the radioactive solute into highly hygroscopic ring-like deposits rather than flat, thin radioactive films is observed on certain substrates. This article describes the effect of this nonuniform distribution of the radioisotopes on the efficiency of PBRII, and presents a technique which enables a better distribution of {sup 32}P by coating the substrates with iron. The iron coating is shown to enable optimal radioisotope sputtering rates, which are essential in {sup 32}P-PBRII for the efficient activation of millimetric biomedical devices such as stents or coils.

  20. Radioactive sputter cathodes for 32P plasma-based ion implantation

    International Nuclear Information System (INIS)

    The development of clinical treatments involving the use of beta-emitting millimetric and sub-millimetric devices has been a continuing trend in nuclear medicine. Implanted a few nanometers below the surface of endovascular implants, seeds or beads, beta-emitting radioisotopes can be used in a variety of biomedical applications. Recently, new technologies have emerged to enable the rapid and efficient activation of such devices. A pulsed, coaxial electron cyclotron resonance plasma reactor was designed and tested to demonstrate the feasibility of plasma-based radioactive ion implantation (PBRII). It has been shown that such plasma reactors allow for the implantation of radioisotopes (32P) into biomedical devices with higher efficiencies than those obtained with conventional ion beams. Fragments containing radioactive atoms are produced in the implanter by means of a negatively biased solid sputter cathode that is inserted into an argon plasma. Dilute orthophosphoric acid solutions (H332PO4) are used for the fabrication of flat sputter targets, since they offer a high radioisotope content. However, the aggregation of the radioactive solute into highly hygroscopic ring-like deposits rather than flat, thin radioactive films is observed on certain substrates. This article describes the effect of this nonuniform distribution of the radioisotopes on the efficiency of PBRII, and presents a technique which enables a better distribution of 32P by coating the substrates with iron. The iron coating is shown to enable optimal radioisotope sputtering rates, which are essential in 32P-PBRII for the efficient activation of millimetric biomedical devices such as stents or coils

  1. Plasma Diagnostics and Characterizations of Al-Doped ZnO Films Deposited with Low Temperature Sputtering Process

    Science.gov (United States)

    Choi, Yoon S.; Shim, Byeong C.; Kim, Hye R.; Han, Jeon G.

    2013-11-01

    Facing targets sputtering (FTS) is known to be one of the promising magnetron sputtering systems for low temperature processes, because of the significant reduction of damage in the film structure, by the suppression of impinging high energy particles. In this study, FTS was compared with conventional magnetron sputtering (CMS), by various plasma diagnostics methods and film analysis. The sputtering target used was ZnO:Al (2%). OES was used to study the emission spectroscopy of process plasma. Ion current densities and the temperatures on the substrate were measured, to compare FTS with CMS. A coplanar-type Fabry-Perot interferometer (FPI) was utilized to measure the gas temperatures of Zn atoms, by Doppler broadening of the corresponding emission lines. Gas temperatures of Zn of FTS were measured to be lower, in the range of 200-300 K, compared with those of CMS. Film analysis showed that quality films can be synthesized at low temperature with rf powered FTS.

  2. On the argon and oxygen incorporation into SiOx through ion implantation during reactive plasma magnetron sputter deposition

    OpenAIRE

    van Hattum, E.D.; Boltje, D. B.; Palmero Acebedo, A.; Arnoldbik, W.M.; Rudolph, H.; Habraken, F.H.P.M.

    2008-01-01

    The incorporation of argon in SiOx (0 x 2) during reactive plasma magnetron sputter deposition using a O2/Ar plasma and a silicon sputter cathode has been investigated and related to the flux of argon ions created in the plasma afterglowregion on the growth surface. The argon concentration in the grown films appears to be mainly a function of the x-value, independent of the extent of ion bombardment on the growing surface, and only slightly dependent on the substrate temperature during the gr...

  3. Particle-in-Cell/Test-Particle Simulations of Technological Plasmas: Sputtering Transport in Capacitive Radio Frequency Discharges

    OpenAIRE

    Trieschmann, Jan; Schmidt, Frederik; Mussenbrock, Thomas

    2016-01-01

    The paper provides a tutorial to the conceptual layout of a self-consistently coupled Particle-In-Cell/Test-Particle model for the kinetic simulation of sputtering transport in capacitively coupled plasmas at low gas pressures. It explains when a kinetic approach is actually needed and which numerical concepts allow for the inherent nonequilibrium behavior of the charged and neutral particles. At the example of a generic sputtering discharge both the fundamentals of the applied Monte Carlo me...

  4. Plasma polymer films rf sputtered from PTFE under various argon pressures

    Czech Academy of Sciences Publication Activity Database

    Stelmashuk, Vitaliy; Biederman, H.; Slavinská, D.; Zemek, Josef; Trchová, Miroslava

    2005-01-01

    Roč. 77, č. 2 (2005), s. 131-137. ISSN 0042-207X R&D Projects: GA MŠk(CZ) OC 527.10; GA MŠk(CZ) OC 527.90 Grant ostatní: EUREKAΣ2080(XE) OE57 Institutional research plan: CEZ:AV0Z10100521; CEZ:AV0Z20430508 Keywords : RF sputtering * PTFE * fluorcarbon plasma polymers * thin film * teflon * deposition Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.909, year: 2005

  5. Dependence of Au- production upon the target work function in a plasma-sputter-type negative ion source

    International Nuclear Information System (INIS)

    A method to measure the work function of the target surface in a plasma-sputter-type negative ion source has been developed. The present method can be used to determine the work function by measuring the photoelectric current induced by two lasers (He-Ne, Ar+ laser). The dependence of Au- production upon the work function of the target surface in the ion source was studied using this method. The time variation of the target work function and Au- production rate were measured during the cesium coverage decrease due to the plasma ion sputtering. The observed minimum work function of a cesiated gold surface in an Ar plasma was 1.3 eV where the negative ion production rate (Au- current/target current) took the maximum value. The negative ion production rate showed the same dependence on the incident ion energy as that of the sputtering rate when the work function was constant. (author)

  6. Characteristics of plasma parameters in sputtering deposition using a powder target

    International Nuclear Information System (INIS)

    Fabrication mechanisms of functional thin films prepared using a sputtering deposition method with metal-based powder targets were examined and profiles of electron density and emission intensity in the processing plasma were investigated. The electron density and electron temperature were 0.5 × 109 to 3 × 109 cm−9 and 0.5 to 1.5 eV, respectively. The radial profiles of the electron density were almost uniform, but the electron density and temperature at the edge of the electrode were higher than those at the center near the powered electrode. Axial profiles suggested that the electron density was the highest at the plasma/sheath boundary. The profile shape using a powder target was almost the same as that using a bulk target

  7. Particle-in-Cell/Test-Particle Simulations of Technological Plasmas: Sputtering Transport in Capacitive Radio Frequency Discharges

    CERN Document Server

    Trieschmann, Jan; Mussenbrock, Thomas

    2016-01-01

    The paper provides a tutorial to the conceptual layout of a self-consistently coupled Particle-In-Cell/Test-Particle model for the kinetic simulation of sputtering transport in capacitively coupled plasmas at low gas pressures. It explains when a kinetic approach is actually needed and which numerical concepts allow for the inherent nonequilibrium behavior of the charged and neutral particles. At the example of a generic sputtering discharge both the fundamentals of the applied Monte Carlo methods as well as the conceptual details in the context of the sputtering scenario are elaborated on. Finally, two in the context of sputtering transport simulations often exploited assumptions, namely on the energy distribution of impinging ions as well as on the test particle approach, are validated for the proposed example discharge.

  8. Characterization of the plasma in a radio-frequency magnetron sputtering system

    International Nuclear Information System (INIS)

    In order to understand the fundamental mechanisms in a radio-frequency magnetron sputtering system, the main properties of the argon plasma used in the process have been measured. A complete three-dimensional map of the ion density, electron temperature, and plasma potential has been obtained using a Langmuir probe. The electron temperature as well as the ion density have been found to increase in the region of the so called race track at the cathode. Furthermore, from the plasma potential map, the time-averaged local electric field has been obtained, pointing out the race track as the region where the most intense ion bombardment takes place. Besides, only the ions produced near the race track are accelerated towards the cathode, whereas those produced in the remaining volume move towards the anode. Finally, the dependence of the plasma quantities on the incident radio-frequency power and deposition pressure has been studied. The plasma potential measured using the Langmuir probe has been found to agree with that determined using an energy resolved mass spectrometer in all studied conditions

  9. Modification of polylactic acid surface using RF plasma discharge with sputter deposition of a hydroxyapatite target for increased biocompatibility

    Energy Technology Data Exchange (ETDEWEB)

    Tverdokhlebov, S.I., E-mail: tverd@tpu.ru [Tomsk Polytechnic University, 30 Lenin Avenue, Tomsk 634050 (Russian Federation); Bolbasov, E.N.; Shesterikov, E.V. [Tomsk Polytechnic University, 30 Lenin Avenue, Tomsk 634050 (Russian Federation); Antonova, L.V.; Golovkin, A.S.; Matveeva, V.G. [Federal State Budgetary Institution Research Institute for Complex Issues of Cardiovascular Disease, 6 Sosnovy Blvd, Kemerovo 650002 (Russian Federation); Petlin, D.G.; Anissimov, Y.G. [Griffith University, School of Natural Sciences, Engineering Dr., Southport, QLD 4222 (Australia)

    2015-02-28

    Highlights: • The treatment by plasma of radio-frequency magnetron discharge with hydroxyapatite target sputtering improves the biocompatibility of PLLA surface. • The treatment significantly increases the roughness of PLLA surface. • The formation of rough highly porous surface is due to the etching and crystallization processes on PLLA surface during treatment. • Maximum concentration of the ions from the sputtered target is achieved at 60 s of the plasma treatment. - Abstract: Surface modification of polylactic acid (PLLA) by plasma of radio-frequency magnetron discharge with hydroxyapatite target sputtering was investigated. Increased biocompatibility was demonstrated using studies with bone marrow multipotent mesenchymal stromal cells. Atomic force microscopy demonstrates that the plasma treatment modifies the surface morphology of PLLA to produce rougher surface. Infrared spectroscopy and X-ray diffraction revealed that changes in the surface morphology are caused by the processes of PLLA crystallization. Fluorescent X-ray spectroscopy showed that the plasma treatment also changes the chemical composition of PLLA, enriching it with ions of the sputtered target: calcium, phosphorus and oxygen. It is hypothesized that these surface modifications increase biocompatibility of PLLA without increasing toxicity.

  10. Modification of polylactic acid surface using RF plasma discharge with sputter deposition of a hydroxyapatite target for increased biocompatibility

    International Nuclear Information System (INIS)

    Highlights: • The treatment by plasma of radio-frequency magnetron discharge with hydroxyapatite target sputtering improves the biocompatibility of PLLA surface. • The treatment significantly increases the roughness of PLLA surface. • The formation of rough highly porous surface is due to the etching and crystallization processes on PLLA surface during treatment. • Maximum concentration of the ions from the sputtered target is achieved at 60 s of the plasma treatment. - Abstract: Surface modification of polylactic acid (PLLA) by plasma of radio-frequency magnetron discharge with hydroxyapatite target sputtering was investigated. Increased biocompatibility was demonstrated using studies with bone marrow multipotent mesenchymal stromal cells. Atomic force microscopy demonstrates that the plasma treatment modifies the surface morphology of PLLA to produce rougher surface. Infrared spectroscopy and X-ray diffraction revealed that changes in the surface morphology are caused by the processes of PLLA crystallization. Fluorescent X-ray spectroscopy showed that the plasma treatment also changes the chemical composition of PLLA, enriching it with ions of the sputtered target: calcium, phosphorus and oxygen. It is hypothesized that these surface modifications increase biocompatibility of PLLA without increasing toxicity

  11. β-Ta and α-Cr thin films deposited by high power impulse magnetron sputtering and direct current magnetron sputtering in hydrogen containing plasmas

    International Nuclear Information System (INIS)

    Thin films of β-Ta and α-Cr were deposited on Si(1 0 0) and 1000 Å SiO2/Si(1 0 0), by high power impulse magnetron sputtering (HiPIMS) and direct current magnetron sputtering (dcMS) in hydrogen-containing plasmas. The films were characterized by X-ray photoelectron spectroscopy (XPS), X-ray diffraction, scanning electron microscopy, elastic recoil detection analysis, and four-point probe measurements. The results showed that 001-oriented β-Ta films containing up to ∼8 at% hydrogen were obtained with HiPIMS, albeit with no chemical shift evident in XPS. The 110 oriented α-Cr films display a hydrogen content less than the detection limit of 1 at%, but H2 favors the growth of high-purity films for both metals. The β-Ta films deposited with dcMS are columnar, which seems independent of H2 presence in the plasma, while the films grown by HIPIMS are more fine-grained. The latter type of microstructure was present for the α-Cr films and found to be independent on choice of technique or hydrogen in the plasma. The β-Ta films show a resistivity of ∼140–180 µΩ cm, while α-Cr films exhibit values around 30 µΩ cm; the lowest values obtained for films deposited by HiPIMS and with hydrogen in the plasma for both metals.

  12. Electrostatic quadrupole plasma mass spectrometer measurements during thin film depositions using simultaneous matrix assisted pulsed laser evaporation and magnetron sputtering

    International Nuclear Information System (INIS)

    A hybrid plasma deposition process, combining matrix assisted pulsed laser evaporation (MAPLE) of carbon nanopearls (CNPs) with magnetron sputtering of gold was investigated for growth of composite films, where 100 nm sized CNPs were encapsulated into a gold matrix. Composition and morphology of such composite films was characterized with x-ray photoelectron spectroscopy, scanning electron microscopy, and transmission electron microscopy (TEM) analysis. Carbon deposits on a gold magnetron sputter target and carbon impurities in the gold matrices of deposited films were observed while codepositing from gold and frozen toluene-CNP MAPLE targets in pure argon. Electrostatic quadrupole plasma analysis was used to determine that a likely mechanism for generation of carbon impurities was a reaction between toluene vapor generated from the MAPLE target and the argon plasma originating from the magnetron sputtering process. Carbon impurities of codeposited films were significantly reduced by introducing argon-oxygen mixtures into the deposition chamber; reactive oxygen species such as O and O+ effectively removed carbon contamination of gold matrix during the codeposition processes. Increasing the oxygen to argon ratio decreased the magnetron target sputter rate, and hence hybrid process optimization to prevent gold matrix contamination and maintain a high sputter yield is needed. High resolution TEM with energy dispersive spectrometry elemental mapping was used to study carbon distribution throughout the gold matrix as well as embedded CNP clusters. This research has demonstrated that a hybrid MAPLE and magnetron sputtering codeposition process is a viable means for synthesis of composite thin films from premanufactured nanoscale constituents, and that cross-process contaminations can be overcome with understanding of hybrid plasma process interaction mechanisms.

  13. Interaction of deuterium plasma with sputter-deposited tungsten nitride films

    Energy Technology Data Exchange (ETDEWEB)

    Gao, Liang [Max-Planck-Institut fuer Plasmaphysik, Boltzmannstr. 2, 85748 Garching (Germany); Ruhr-Universitaet, Bochum, Universitaetsstrasse 150, 44801 Bochum (Germany); Jacob, Wolfgang; Schwarz-Selinger, Thomas; Manhard, Armin; Meisl, Gerd [Max-Planck-Institut fuer Plasmaphysik, Boltzmannstr. 2, 85748 Garching (Germany)

    2015-05-01

    N2 seeding is frequently used for radiative power dissipation in fusion devices with full-tungsten divertor, such as ASDEX-Upgrade and JET. N implantation into W or redeposition of W in the presence of N may produce N-containing W surfaces. Magnetron-sputtered tungsten nitride (WN{sub x}) films were exposed to deuterium (D) plasmas to mimic the interaction of D plasmas with such re-deposited layers. RBS and NRA were employed to measure the composition of WN{sub x}, erosion by D plasma and D retention. D implantation was performed with ion energies below 215 eV at sample temperatures of 300 K and 600 K. Low energy Ar plasma exposure was combined with NRA measurements for D depth profiling in the uppermost nanometers. The experimental results are compared with SDTRIM.SP simulations. Results show that D was only retained within the ion penetration range for samples exposed at 300 K. At 600 K, the total amount of retained D decreases by 50% compared with 300 K and D diffuses beyond the implantation zone. Annealing of the WN prior to D implantation can partially heal the D trap-sites thus reducing the retained D in the implantation zone by about 10%.

  14. Interaction of deuterium plasma with sputter-deposited tungsten nitride films

    International Nuclear Information System (INIS)

    N2 seeding is frequently used for radiative power dissipation in fusion devices with full-tungsten divertor, such as ASDEX-Upgrade and JET. N implantation into W or redeposition of W in the presence of N may produce N-containing W surfaces. Magnetron-sputtered tungsten nitride (WNx) films were exposed to deuterium (D) plasmas to mimic the interaction of D plasmas with such re-deposited layers. RBS and NRA were employed to measure the composition of WNx, erosion by D plasma and D retention. D implantation was performed with ion energies below 215 eV at sample temperatures of 300 K and 600 K. Low energy Ar plasma exposure was combined with NRA measurements for D depth profiling in the uppermost nanometers. The experimental results are compared with SDTRIM.SP simulations. Results show that D was only retained within the ion penetration range for samples exposed at 300 K. At 600 K, the total amount of retained D decreases by 50% compared with 300 K and D diffuses beyond the implantation zone. Annealing of the WN prior to D implantation can partially heal the D trap-sites thus reducing the retained D in the implantation zone by about 10%.

  15. Comparative study of nanocomposites prepared by pulsed and dc sputtering combined with plasma polymerization suitable for photovoltaic device applications

    Energy Technology Data Exchange (ETDEWEB)

    Hussain, Amreen A. [Physical Sciences Division, Institute of Advanced Study in Science and Technology, Guwahati, Assam (India); Pal, Arup R., E-mail: arpal@iasst.gov.in [Physical Sciences Division, Institute of Advanced Study in Science and Technology, Guwahati, Assam (India); Kar, Rajib [Laser and Plasma Technology Division, Bhabha Atomic Research Center, Trombay, Mumbai (India); Bailung, Heremba; Chutia, Joyanti [Physical Sciences Division, Institute of Advanced Study in Science and Technology, Guwahati, Assam (India); Patil, Dinkar S. [Laser and Plasma Technology Division, Bhabha Atomic Research Center, Trombay, Mumbai (India)

    2014-12-15

    Plasma processing, a single step method for production of large area composite films, is employed to deposit plasma polymerized aniline-Titanium dioxide (PPani-TiO{sub 2}) nanocomposite thin films. The deposition of PPani-TiO{sub 2} nanocomposite films are made using reactive magnetron sputtering and plasma polymerization combined process. This study focuses on the direct comparison between continuous and pulsed dc magnetron sputtering techniques of titanium in combination with rf plasma polymerization of aniline. The deposited PPani-TiO{sub 2} nanocomposite films are characterized and discussed in terms of structural, morphological and optical properties. A self powered hybrid photodetector has been developed by plasma based process. The proposed method provides a new route where the self-assembly of molecules, that is, the spontaneous association of atomic or molecular building blocks under plasma environment, emerge as a successful strategy to form well-defined structural and morphological units of nanometer dimensions. - Highlights: • PPani-TiO{sub 2} nanocomposite by pulsed and dc sputtering with rf plasma polymerization. • In-situ and Ex-situ H{sub 2}SO{sub 4} doping in PPani-TiO{sub 2} nanocomposite. • PPani-TiO{sub 2} nanocomposite based self-powered-hybrid photodetector.

  16. Comparative study of nanocomposites prepared by pulsed and dc sputtering combined with plasma polymerization suitable for photovoltaic device applications

    International Nuclear Information System (INIS)

    Plasma processing, a single step method for production of large area composite films, is employed to deposit plasma polymerized aniline-Titanium dioxide (PPani-TiO2) nanocomposite thin films. The deposition of PPani-TiO2 nanocomposite films are made using reactive magnetron sputtering and plasma polymerization combined process. This study focuses on the direct comparison between continuous and pulsed dc magnetron sputtering techniques of titanium in combination with rf plasma polymerization of aniline. The deposited PPani-TiO2 nanocomposite films are characterized and discussed in terms of structural, morphological and optical properties. A self powered hybrid photodetector has been developed by plasma based process. The proposed method provides a new route where the self-assembly of molecules, that is, the spontaneous association of atomic or molecular building blocks under plasma environment, emerge as a successful strategy to form well-defined structural and morphological units of nanometer dimensions. - Highlights: • PPani-TiO2 nanocomposite by pulsed and dc sputtering with rf plasma polymerization. • In-situ and Ex-situ H2SO4 doping in PPani-TiO2 nanocomposite. • PPani-TiO2 nanocomposite based self-powered-hybrid photodetector

  17. High damage threshold HfO2/SiO2 multilayer mirrors deposited by novel remote plasma sputtering

    Institute of Scientific and Technical Information of China (English)

    XU Ying; CHEN Nan; BU Yi-kun

    2011-01-01

    Sputtering deposition coatings offer significant advantages on electron beam (EB) deposition,including high packing density,environmental stability and extremely low losses.But the inherent high compressive stress affects its application in high power laser system.This paper describes the technical feasibility of high damage threshold laser mirrors deposited by a novel remote plasma sputtering technique.This technique is based on generating intensive plasma remotely from the target and then magnetically steering the plasma to the target to realize the full uniform sputtering.The pseudo-independence between target voltage and target current provides us very flexible parameters tuning,especially for the films stress control.Deposition conditions are optimized to yield fully oxidized and low compressive stress single layer HfO2 and SiO2.The high damage threshold of 43.8 J/cm2 for HfO2/SiO2 laser mirrors at 1064 nm is obtained.For the first time the remote plasma sputtering is successfully applied in depositing laser mirrors with high performance.

  18. Composite SiOx/hydrocarbon plasma polymer films prepared by RF magnetron sputtering of SiO2 and polyimide

    Czech Academy of Sciences Publication Activity Database

    Drabik, M.; Kousal, J.; Pinosh, Y.; Choukourov, A.; Biederman, H.; Slavínská, D.; Macková, Anna; Boldyryeva, Hanna; Pešička, J.

    2007-01-01

    Roč. 81, č. 7 (2007), s. 920-927. ISSN 0042-207X Institutional research plan: CEZ:AV0Z10480505 Keywords : composite films * magnetron * sputtering * polyimide * SiO2 Subject RIV: BL - Plasma and Gas Discharge Physics Impact factor: 0.881, year: 2007

  19. Bright X-ray source from a laser-driven micro-plasma-waveguide

    CERN Document Server

    Yi, Longqing

    2016-01-01

    Bright tunable x-ray sources have a number of applications in basic science, medicine and industry. The most powerful sources are synchrotrons, where relativistic electrons are circling in giant storage rings. In parallel, compact laser-plasma x-ray sources are being developed. Owing to the rapid progress in laser technology, very high-contrast femtosecond laser pulses of relativistic intensities become available. These pulses allow for interaction with micro-structured solid-density plasma without destroying the structure by parasitic pre-pulses. The high-contrast laser pulses as well as the manufacturing of materials at micro- and nano-scales open a new realm of possibilities for laser interaction with photonic materials at the relativistic intensities. Here we demonstrate, via numerical simulations, that when coupling with a readily available 1.8 Joule laser, a micro-plasma-waveguide (MPW) may serve as a novel compact x-ray source. Electrons are extracted from the walls by the laser field and form a dense ...

  20. Performance of plasma sputtered fuel cell electrodes with ultra-low Pt loadings

    Energy Technology Data Exchange (ETDEWEB)

    Cavarroc, M.; Ennadjaoui, A. [MID Dreux Innovation, CAdD, 4 Rue Albert Caquot-28500 Vernouillet (France); Mougenot, M.; Brault, P.; Escalier, R.; Tessier, Y. [Groupe de Recherches sur l' Energetique des Milieux Ionises, CNRS Universite d' Orleans, BP6744, 14 rue d' Issoudun, 45067 Orleans (France); Durand, J.; Roualdes, S. [Institut Europeen des Membranes, ENSCM, UM2, CNRS, Universite Montpellier 2, CC047, Place Eugene Bataillon, 34095 Montpellier cedex 5 (France); Sauvage, T. [Conditions Extremes et Materiaux, Haute Temperature et Irradiation, UPR3079 CNRS, Site Cyclotron, 3A rue de la Ferollerie, 45071 Orleans Cedex 2 (France); Coutanceau, C. [Laboratoire de Catalyse en Chimie Organique, UMR6503 Universite de Poitiers, CNRS, 86022, Poitiers (France)

    2009-04-15

    Ultra-low Pt content PEMFC electrodes have been manufactured using magnetron co-sputtering of carbon and platinum on a commercial E-Tek {sup registered} uncatalyzed gas diffusion layer in plasma fuel cell deposition devices. Pt loadings of 0.16 and 0.01 mg cm{sup -2} have been realized. The Pt catalyst is dispersed as small clusters with size less than 2 nm over a depth of 500 nm. PEMFC test with symmetric electrodes loaded with 10 {mu}g cm{sup -2} led to maximum reproducible power densities as high as 0.4 and 0.17 W cm{sup -2} with Nafion {sup registered} 212 and Nafion {sup registered} 115 membranes, respectively. (author)

  1. Oxidation of sputtered metallic Sn thin films using N2 atmospheric pressure plasma jets

    International Nuclear Information System (INIS)

    We investigated the oxidation of sputtered metallic Sn thin films annealed by N2 atmospheric pressure plasma jets (APPJs) with and without the introduction of ambient air to the reaction. As the APPJ annealing duration increased, the metallic Sn first oxidized into SnO, and then, a metallic Sn phase reappeared owing to the disproportionation reaction 4SnO → Sn3O4 + Sn → 2Sn + 2SnO2. The involvement of O2 from the ambient air led to more reactive oxidation of the thin films. APPJ annealing increased the band gap to ∼2.6–2.7 eV. All the annealed films show conductivity with unstable readings of carrier types because of the mixed phases of Sn, SnO, and possibly, some SnO2 in the films. (paper)

  2. Synthesis of ZrN Film Via the Plasma Sputter-Type Negative Ion Source

    Directory of Open Access Journals (Sweden)

    Nico Valmoria

    1999-12-01

    Full Text Available A plasma sputter-type negative ion source is used in the production of high grade coatings of zirconium mononitride (ZrN on copper substrate. It presents a new approach for the production of ZrN thin films. The ion source was operated in its target/gas mode. Zirconium metal is used as target and argon as the sputtering gas. Nitrogen is used as the reactive gas. Optimum conditions for the synthesis of ZrN for a number of process parameters like volume ratio of gases, discharge conditions, substrate heating, bias, and deposition time were determined. Experimental runs using between 20% and 30% of nitrogen (with argon constituting the other 70-80% in a total gas filling pressure of 7.0 x 10-3 Torr and an hour of deposition showed the synthesis of good samples by visual inspection in view of the typical gold color of the film produced. The target potential was between 300V to 325V and the target current between 7 mA to 12 mA. Discharge voltage was at 40V giving a plasma current between 698 mA to 1070 mA for the range of target potentials. The substrate was cooled to 20°e. The resulting layers were characterized by surface analysis methods like X-ray diffraction (XRD, atomic force microscopy (AFM, and energy dispersive Xray analysis (EDAX. Films produced under these conditions exhibit the (100 and (200 peaks of ZrN obtained from the XRD analysis. The rms roughness from AFM were determined to range from 72 nm to 101 nm. Deposition rate was obtained at about 17 nm/min.

  3. Titanium dioxide (TIO2) thin film and plasma properties in RF magnetron sputtering

    International Nuclear Information System (INIS)

    Lately, titanium dioxide (TiO2) films with anatase crystalline property received numerous attentions as unique material properties. There are wide applications of TiO2 thin film such as for photocatalytic application in solar cell. In the present study, radio frequency (RF) magnetron sputtering technique has been used to produce high dense, homogeneously controllable film layer at low deposition temperature using titanium (Ti) target. The diameter of the Ti target is 3 inch with fixed discharge power of 400W. Magnetron sputtering plasma has been produced in high purity 99.99% Argon (Ar) and 99.99% Oxygen (O2) environment pressure ranging from 5 to 20 mTorr. The TiO2 were growth on silicon and glass substrates. Substrate temperature during deposition was kept constant at 400°C. The distance between target and substrate holder was maintain at 14 cm with rotation of 10 rotation-per-minutes. Our X-ray diffraction result, shows anatase crystalline successfully formed with characterization peaks of plane (101) at 2θ = 25.28°, plane (202) at 2θ = 48.05° and plane (211) at 2θ = 55.06°. In addition, it is our interest to study the plasma properties and optical spectrum of Ti, Ti+ , O- , ArM and Ar+ in the chamber during the deposition process. Result of emission line intensities, electron density and temperature from optical spectroscope and Langmuir probe will be discuss further during the workshop. This works were supported by Graduate Incentive Scheme of Universiti Tun Hussein Onn Malaysia (UTHM) and Fundamental Research Grant Scheme of Ministry of Higher Education, Malaysia. (author)

  4. An economic analysis of the deposition of electrochromic WO3 via sputtering or plasma enhanced chemical vapor deposition

    International Nuclear Information System (INIS)

    The costs of manufacturing electrochromic WO3 thin films deposited by either radio frequency plasma enhanced chemical vapor deposition (PECVD) or DC reactive magnetron sputtering of metal targets were modeled. Both inline systems for large area glass substrates and roll-to-roll systems for flexible webs were compared. Costs of capital, depreciation, raw materials, labor, power, and other miscellaneous items were accounted for in the model. The results predict that on similar sized systems, PECVD can produce electrochromic WO3 for as little as one-third the cost, and have more than 10 times the annual production capacity of sputtering. While PECVD cost is dominated by raw materials, primarily WF6, sputtering cost is dominated by labor and depreciation

  5. Buried homojunction solar cells formed in p-InP during sputter deposition and hydrogen plasma processing

    Science.gov (United States)

    Gessert, T. A.; Li, X.; Wanlass, M. W.; Coutts, T. J.

    1990-01-01

    Although it is apparent that direct current (DC) magnetron sputter deposition of indium tin oxide (ITO) leads to the formation of a buried homojunction in single-crystal p-type InP, the actual mechanism of type conversion of the InP surface is not clear. Since sputter deposition of In2O3 has also led to high-quality cells, it appears that Sn is not the cause of type conversion. To investigate the junction formation process further, experiments involving the use of a pure hydrogen plasma have been performed, resulting in type conversion of Fe-doped InP surfaces and in solar cells with efficiencies over 16 percent (global). The results confirm that sputter deposition is not necessary to form this type of buried homojunction solar cell, and they suggest a fabrication process that may be used with other relevant photovoltaic materials.

  6. High brightness EUV sources based on laser plasma at using droplet liquid metal target

    Science.gov (United States)

    Vinokhodov, A. Yu; Krivokorytov, M. S.; Sidelnikov, Yu V.; Krivtsun, V. M.; Medvedev, V. V.; Koshelev, K. N.

    2016-05-01

    We present the study of a source of extreme ultraviolet (EUV) radiation based on laser plasma generated due to the interaction of radiation from a nanosecond Nd : YAG laser with a liquidmetal droplet target consisting of a low-temperature eutectic indium–tin alloy. The generator of droplets is constructed using a commercial nozzle and operates on the principle of forced capillary jet decomposition. Long-term spatial stability of the centre-of-mass position of the droplet with the root-mean-square deviation of ~0.5 μm is demonstrated. The use of a low-temperature working substance instead of pure tin increases the reliability and lifetime of the droplet generator. For the time- and space-averaged power density of laser radiation on the droplet target 4 × 1011 W cm-2 and the diameter of radiating plasma ~80 μm, the mean efficiency of conversion of laser energy into the energy of EUV radiation at 13.5 +/- 0.135 nm equal to 2.3% (2π sr)-1 is achieved. Using the doublepulse method, we have modelled the repetitively pulsed regime of the source operation and demonstrated the possibility of its stable functioning with the repetition rate up to 8 kHz for the droplet generation repetition rate of more than 32 kHz, which will allow the source brightness to be as large as ~0.96 kW (mm2 sr)-1.

  7. Sputtering yields and surface chemical modification of tin-doped indium oxide in hydrocarbon-based plasma etching

    International Nuclear Information System (INIS)

    Sputtering yields and surface chemical compositions of tin-doped indium oxide (or indium tin oxide, ITO) by CH+, CH3+, and inert-gas ion (He+, Ne+, and Ar+) incidence have been obtained experimentally with the use of a mass-selected ion beam system and in-situ x-ray photoelectron spectroscopy. It has been found that etching of ITO is chemically enhanced by energetic incidence of hydrocarbon (CHx+) ions. At high incident energy incidence, it appears that carbon of incident ions predominantly reduce indium (In) of ITO and the ITO sputtering yields by CH+ and CH3+ ions are found to be essentially equal. At lower incident energy (less than 500 eV or so), however, a hydrogen effect on ITO reduction is more pronounced and the ITO surface is more reduced by CH3+ ions than CH+ ions. Although the surface is covered more with metallic In by low-energy incident CH3+ ions than CH+ ions and metallic In is in general less resistant against physical sputtering than its oxide, the ITO sputtering yield by incident CH3+ ions is found to be lower than that by incident CH+ ions in this energy range. A postulation to account for the relation between the observed sputtering yield and reduction of the ITO surface is also presented. The results presented here offer a better understanding of elementary surface reactions observed in reactive ion etching processes of ITO by hydrocarbon plasmas

  8. Optical emission and mass spectroscopy of plasma processes in reactive DC pulsed magnetron sputtering of aluminium oxide

    Czech Academy of Sciences Publication Activity Database

    Novotný, Michal; Bulíř, Jiří; Pokorný, Petr; Bočan, Jiří; Fitl, Přemysl; Lančok, Ján; Musil, Jindřich

    2010-01-01

    Roč. 12, č. 3 (2010), 697-700. ISSN 1454-4164 R&D Projects: GA AV ČR IAA100100718; GA AV ČR KAN400100653; GA ČR GP202/09/P324 Institutional research plan: CEZ:AV0Z10100522 Keywords : reactive magnetron sputtering * alumina * plasma spectroscopy * mass spectroscopy * optical emission spectroscopy Subject RIV: BH - Optics, Masers, Lasers Impact factor: 0.412, year: 2010

  9. Physics of Plasma-Based Ion Implantation&Deposition (PBIID)and High Power Impulse Magnetron Sputtering (HIPIMS): A Comparison

    Energy Technology Data Exchange (ETDEWEB)

    Anders, Andre

    2007-08-28

    The emerging technology of High Power Impulse MagnetronSputtering (HIPIMS) has much in common with the more establishedtechnology of Plasma Based Ion Implantation&Deposition (PBIID):both use pulsed plasmas, the pulsed sheath periodically evolves andcollapses, the plasma-sheath system interacts with the pulse-drivingpower supply, the plasma parameters are affected by the power dissipated,surface atoms are sputtered and secondary electrons are emitted, etc.Therefore, both fields of science and technology could learn from eachother, which has not been fully explored. On the other hand, there aresignificant differences, too. Most importantly, the operation of HIPIMSheavilyrelies on the presence of a strong magnetic field, confiningelectrons and causing their ExB drift, which is closed for typicalmagnetron configurations. Second, at the high peak power levels used forHIPIMS, 1 kW/cm2 or greater averaged over the target area, the sputteredmaterial greatly affects plasma generation. For PBIID, in contrast,plasma generation and ion processing of the surface (ion implantation,etching, and deposition) are considered rela-tively independentprocesses. Third, secondary electron emission is generally considered anuisance for PBIID, especially at high voltages, whereas it is a criticalingredient to the operation of HIPIMS. Fourth, the voltages in PBIID areoften higher than in HIPIMS. For the first three reasons listed above,modelling of PBIID seems to be easier and could give some guidance forfuture HIPIMS models, which, clearly, will be more involved.

  10. Workfunction tuning of zinc oxide films by argon sputtering and oxygen plasma: an experimental and computational study

    International Nuclear Information System (INIS)

    Zinc oxide (ZnO) films were grown by radio frequency magnetron sputter deposition and the changes to its surface composition and workfunction induced by argon sputter cleaning and oxygen plasma treatments were characterized using x-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy and density functional theory modelling. Compared with a workfunction of 3.74 eV for the as-deposited ZnO films, a workfunction of 3.95 eV was obtained after Ar sputter cleaning and 4.21 eV after exposure to oxygen plasma. The data indicate that oxygen plasma treatment leads to a more negative ZnO surface. The dipole induced by this charge redistribution reinforces the original surface dipole, which results in an increase in the surface dipole moment and an increase in workfunction. The reverse is true for hydrocarbon contamination of ZnO surfaces. Excellent qualitative agreement between the experimental results and computational modelling was obtained. The results suggest that specific surface functionalization may be a viable method of controlling the workfunction of ZnO for use as the transparent conducting oxide in optoelectronic applications such as solar cells and organic light-emitting diodes. (paper)

  11. Particle beam experiments for the investigation of plasma-surface interactions: application to magnetron sputtering and polymer treatment

    CERN Document Server

    Corbella, Carles; Kreiter, Oliver; Arcos, Teresa de los; Benedikt, Jan; von Keudell, Achim

    2013-01-01

    A beam experiment is presented to study heterogeneous reactions relevant to plasma-surface interactions. Atom and ion beams are focused onto the sample to expose it to quantified beams of oxygen, nitrogen, hydrogen, noble gas ions and metal vapor. The heterogeneous surface processes are monitored in-situ and in real time by means of a quartz crystal microbalance (QCM) and Fourier transform infrared spectroscopy (FTIR). Two examples illustrate the capabilities of the particle beam setup: oxidation and nitriding of aluminum as a model of target poisoning during reactive magnetron sputtering, and plasma treatment of polymers (PET, PP).

  12. Validity of “sputtering and re-condensation” model in active screen cage plasma nitriding process

    Energy Technology Data Exchange (ETDEWEB)

    Saeed, A., E-mail: phyadi@gmail.com [Department of Physics, Gomal University, 29050 D.I. Khan (Pakistan); National Centre for Physics, Quaid-i-Azam University Campus Islamabad 45320 (Pakistan); Khan, A.W. [Department of Physics, Gomal University, 29050 D.I. Khan (Pakistan); National Centre for Physics, Quaid-i-Azam University Campus Islamabad 45320 (Pakistan); Jan, F. [Department of Physics, Quaid-i-Azam University, 45320 Islamabad (Pakistan); Abrar, M. [Institute of Physics and Electronics, University of Peshawar, 25120 Peshawar (Pakistan); Khalid, M. [Department of Physics, Gomal University, 29050 D.I. Khan (Pakistan); Zakaullah, M. [Department of Physics, Quaid-i-Azam University, 45320 Islamabad (Pakistan)

    2013-05-15

    The validity of “sputtering and re-condensation” model in active screen plasma nitriding for nitrogen mass transfer mechanism is investigated. The dominant species including NH, Fe-I, N{sub 2}{sup +}, N-I and N{sub 2} along with H{sub α} and H{sub β} lines are observed in the optical emission spectroscopy (OES) analysis. Active screen cage and dc plasma nitriding of AISI 316 stainless steel as function of treatment time is also investigated. The structure and phases composition of the nitrided layer is studied by X-ray diffraction (XRD). Surface morphology is studied by scanning electron microscopy (SEM) and hardness profile is obtained by Vicker's microhardness tester. Increasing trend in microhardness is observed in both cases but the increase in active screen plasma nitriding is about 3 times greater than that achieved by dc plasma nitriding. On the basis of metallurgical and OES observations the use of “sputtering and re-condensation” model in active screen plasma nitriding is tested.

  13. Cluster ion formation during sputtering processes: a complementary investigation by ToF-SIMS and plasma ion mass spectrometry

    International Nuclear Information System (INIS)

    Plasma ion mass spectrometry using a plasma process monitor (PPM) and time-of-flight secondary ion mass spectrometry (ToF-SIMS) have been complementarily employed to investigate the sputtering and ion formation processes of Al-doped zinc oxide. By comparing the mass spectra, insights on ion formation and relative cross-sections have been obtained: positive ions as measured during magnetron sputtering by PPM are originating from the plasma while those in SIMS start at the surface leading to large differences in the mass spectra. In contrast, negative ions originating at the surface will be accelerated through the plasma sheath. They arrive at the PPM after traversing the plasma nearly collisionless as seen from the rather similar spectra. Hence, it is possible to combine the high mass resolution of ToF-SIMS to obtain insight for separating cluster ions, e.g. Znx and ZnOy, and the energy resolution of PPM to find fragmentation patterns for negative ions. While the ion formation processes during both experiments can be assumed to be similar, differences may arise due to the lower volume probed by SIMS. In the latter case, there is a chance of small target inhomogeneities being able to be enhanced and lower surface temperatures leading to less outgassing and, thus, retention of volatile compounds. (paper)

  14. A study of the plasma electronegativity in an argon-oxygen pulsed-dc sputter magnetron

    International Nuclear Information System (INIS)

    Using Langmuir probe-assisted laser photodetachment, the temporal evolution of the O- density was determined in the bulk plasma of a unipolar pulsed-dc magnetron. The source was operated in reactive mode, at a fixed nominal on-time power of 100 W, sputtering Ti in argon-oxygen atmospheres at 1.3 Pa pressure, but over a variation of duty cycles from 5% to 50% and oxygen partial pressures of 10% and 50% of the total pressure. In the plasma on-time, for all duty cycles the negative ion density (n-) rises marginally reaching values typically less than 2 x 1015 m-3 with negative ion-to-electron density ratios, α - falls by about 20-30% as fast O- species created at the cathode exit the system. This is followed by a rapid rise in n- to values at least 2 or 3 times that in the on-time. The rate of rise of n- and its maximum value both increase with decreasing duty cycle. In the off-time, the electron density falls rapidly (initial decay rates of several tens of μs), and therefore the afterglow plasma becomes highly electronegative, with α reaching 4.6 and 14.4 for 10% and 50% oxygen partial pressure, respectively. The rapid rise in n- in the afterglow (in which the electron temperature falls from about 5 to 0.5 eV) is attributed to the dissociative attachment of highly excited oxygen metastables, which themselves are created in the pulse on-time. At the lowest duty of 5%, the long-term O- decay times are several hundred μs. Langmuir probe characteristics show the clear signature that negative ions dominate over the electrons in the off-time. From the ion and electron saturation current ratios, α has been estimated in some chosen cases and found to agree within a factor between 2 and 10 with those obtained more directly from the photodetachment method.

  15. Plasma-Neutral Coupling on the Dark and Bright Sides of Antarctica

    Science.gov (United States)

    Chu, X.; Yu, Z.; Fong, W.; Chen, C.; Zhao, J.; Huang, W.; Roberts, B. R.; Fuller-Rowell, T. J.; Richmond, A. D.; Gerrard, A. J.; Weatherwax, A. T.; Gardner, C. S.

    2014-12-01

    The polar mesosphere and thermosphere provide a unique natural laboratory for studying the complex physical, chemical, neutral dynamical and electrodynamics processes in the Earth's atmosphere and space environment. McMurdo (geographic 77.83S, geomagnetic 80S) is located by the poleward edge of the aurora oval; so energetic particles may penetrate into the lower thermosphere and mesosphere along nearly vertical geomagnetic field lines. Lidar observations at McMurdo from December 2010 to 2014 have discovered several neutral atmosphere phenomena closely related to ionosphereic parameters and geomagnetic activity. For example, the diurnal tidal amplitude of temperatures not only increases super-exponentially from 100 to 110 km but also its growth rate becomes larger at larger Kp index. The lidar discovery of neutral iron (Fe) layers with gravity wave signatures in the thermosphere enabled the direct measurements of neutral temperatures from 30 to 170 km, revealing the neutral-ion coupling and aurora-enhanced Joule heating. A lidar 'marathon' of 174-hour continuous observations showed dramatic changes of composition (Fe atoms and ice particles) densities (over 40 times) in the mesopause region and their correlations to solar events. In this paper we will study the plasma-neutral coupling on the dark side of Antarctica via observation analysis and numerical modeling of the thermospheric Fe layers in the 100-200 km. A newly developed thermospheric Fe/Fe+ model is used to quantify how Fe+ ions are transported from their main deposition region to the E-F region and then neutralized to form Fe layers under dark polar conditions. We will also study the plasma-neutral coupling on the bright side of Antarctica via analyzing Fe events in summer. Complementary observations will be combined to show how the extreme changes of Fe layers are related to aurora particle precipitation and visible/sub-visible ice particles. These observations and studies will open new areas of

  16. The mechanism of controlling liquid crystal surface pretilt angle on plasma beam sputtered films

    Science.gov (United States)

    Pan, Ru-Pin; Huang, Meng-Chiou; Wu, Wei-Ta; Lai, Cheng-Wei; Wu, Hsin-Ying

    2012-02-01

    In liquid crystal (LC) devices, the surface alignment is essential. The polyimide (PI) film is commonly used to make LC molecules parallel to the surface. A rubbing process is usually applied to choose a particular direction on the surface. A pretilt angle is also induced, which is useful but usually very small. In previous works, we have found out that the sputtered ion-oxide films can give a homeotropic alignment to LC, i,e, the LC molecules are perpendicular to the surface. In this work, we combine these two effects by sputtering the ion-oxide particles onto the PI coated glasses. By adjusting the sputtering conditions, the LC alignment are controlled. A wide range of pretilt angles have been achieved, while the rubbing process is no longer required. A thorough study by varying the sputtering conditions, such as voltage, current, and time duration, and observing the pretilt angles is carried out. The sputtered surfaces are examined with scanning electron microscope to see the coverage. By considering the charge distribution and electric field within the sputter, a quantitative model is then developed, which explains how the sputtering conditions affect the pretilt angles almost perfectly.

  17. Sputtering yields and surface chemical modification of tin-doped indium oxide in hydrocarbon-based plasma etching

    Energy Technology Data Exchange (ETDEWEB)

    Li, Hu; Karahashi, Kazuhiro; Hamaguchi, Satoshi, E-mail: hamaguch@ppl.eng.osaka-u.ac.jp [Center for Atomic and Molecular Technologies, Osaka University, Yamadaoka 2-1, Suita 565-0871 (Japan); Fukasawa, Masanaga; Nagahata, Kazunori; Tatsumi, Tetsuya [Device and Material R& D Group, RDS Platform, Sony Corporation, Kanagawa 243-0014 (Japan)

    2015-11-15

    Sputtering yields and surface chemical compositions of tin-doped indium oxide (or indium tin oxide, ITO) by CH{sup +}, CH{sub 3}{sup +}, and inert-gas ion (He{sup +}, Ne{sup +}, and Ar{sup +}) incidence have been obtained experimentally with the use of a mass-selected ion beam system and in-situ x-ray photoelectron spectroscopy. It has been found that etching of ITO is chemically enhanced by energetic incidence of hydrocarbon (CH{sub x}{sup +}) ions. At high incident energy incidence, it appears that carbon of incident ions predominantly reduce indium (In) of ITO and the ITO sputtering yields by CH{sup +} and CH{sub 3}{sup +} ions are found to be essentially equal. At lower incident energy (less than 500 eV or so), however, a hydrogen effect on ITO reduction is more pronounced and the ITO surface is more reduced by CH{sub 3}{sup +} ions than CH{sup +} ions. Although the surface is covered more with metallic In by low-energy incident CH{sub 3}{sup +} ions than CH{sup +} ions and metallic In is in general less resistant against physical sputtering than its oxide, the ITO sputtering yield by incident CH{sub 3}{sup +} ions is found to be lower than that by incident CH{sup +} ions in this energy range. A postulation to account for the relation between the observed sputtering yield and reduction of the ITO surface is also presented. The results presented here offer a better understanding of elementary surface reactions observed in reactive ion etching processes of ITO by hydrocarbon plasmas.

  18. Adhesion of NiCu Films DC Biased Plasma-Sputter-Deposited on MgO (001)

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    NiCu films about 60nm thick were deposited on MgO (001) substrates at 230℃ by DC plasma-sputtering at 2.7kV and 8mA in pure Ar gas using a Ni90Cu10 target. A DC bias voltage of 0, 60, 110 or 140V was applied to the substrate during deposition. The adhesion of the film to the substrate was studied using a scratch test as a function of . The application of is very effective in increasing the adhesion of the film to the substrate. In conclusion, the adhesion increases with cleaning the substrate surface by sputtering off impurity admolecules during the film initial formation due to the energetic Ar ion particle bombardment.

  19. Properties of Erbium Doped Hydrogenated Amorphous Carbon Layers Fabricated by Sputtering and Plasma Assisted Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    V. Prajzler

    2008-01-01

    Full Text Available We report about properties of carbon layers doped with Er3+ ions fabricated by Plasma Assisted Chemical Vapor Deposition (PACVD and by sputtering on silicon or glass substrates. The structure of the samples was characterized by X-ray diffraction and their composition was determined by Rutherford Backscattering Spectroscopy and Elastic Recoil Detection Analysis. The Absorbance spectrum was taken in the spectral range from 400 nm to 600 nm. Photoluminescence spectra were obtained using two types of Ar laser (λex=514.5 nm, lex=488 nm and also using a semiconductor laser (λex=980 nm. Samples fabricated by magnetron sputtering exhibited typical emission at 1530 nm when pumped at 514.5 nm. 

  20. Photocatalytic property of titanium dioxide thin films deposited by radio frequency magnetron sputtering in argon and water vapour plasma

    Science.gov (United States)

    Sirghi, L.; Hatanaka, Y.; Sakaguchi, K.

    2015-10-01

    The present work is investigating the photocatalytic activity of TiO2 thin films deposited by radiofrequency magnetron sputtering of a pure TiO2 target in Ar and Ar/H2O (pressure ratio 40/3) plasmas. Optical absorption, structure, surface morphology and chemical structure of the deposited films were comparatively studied. The films were amorphous and included a large amount of hydroxyl groups (about 5% of oxygen atoms were bounded to hydrogen) irrespective of the intentional content of water in the deposition chamber. Incorporation of hydroxyl groups in the film deposited in pure Ar plasma is explained as contamination of the working gas with water molecules desorbed by plasma from the deposition chamber walls. However, intentional input of water vapour into the discharge chamber decreased the deposition speed and roughness of the deposited films. The good photocatalytic activity of the deposited films could be attributed hydroxyl groups in their structures.

  1. RF magnetron sputtering of silver thin film in Ne, Ar and Kr discharges-plasma characterisation and surface morphology

    Czech Academy of Sciences Publication Activity Database

    Novotný, Michal; Bulíř, Jiří; Pokorný, Petr; Lančok, Ján; Fekete, Ladislav; Musil, Jindřich; Čekada, M.

    2013-01-01

    Roč. 228, Suppl. 1 (2013), S466–S469. ISSN 0257-8972 R&D Projects: GA ČR(CZ) GAP108/11/1298; GA MŠk(CZ) MEB091125; GA ČR GP202/09/P324 Grant ostatní: VAKUUM(CZ) Grant VAKUUM PRAHA Institutional support: RVO:68378271 Keywords : magnetron sputtering * silver * plasma characterisation * optical emission spectroscopy * mass spectrometry Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.199, year: 2013

  2. Effect of O2 gas partial pressure on mechanical properties of Al2O3 films deposited by inductively coupled plasma-assisted radio frequency magnetron sputtering

    International Nuclear Information System (INIS)

    The effect of O2 partial pressure on the mechanical properties of Al2O3 films is studied. Using films prepared by inductively coupled plasma-assisted radio frequency magnetron sputtering, the deposition rate of Al2O3 decreases rapidly when oxygen is added to the argon sputtering gas. The internal stresses in the films are compressive, with magnitude decreasing steeply from 1.6 GPa for films sputtered in pure argon gas to 0.5 GPa for films sputtered in argon gas at an O2 partial pressure of 0.89 × 10−2 Pa. Stress increases gradually with increasing O2 partial pressure. Using a nanoindentation tester with a Berkovich indenter, film hardness was measured to be about 14 GPa for films sputtered in pure argon gas. Hardness decreases rapidly on the addition of O2 gas, but increases when the O2 partial pressure is increased. Adhesion, measured using a Vickers microhardness tester, increases with increasing O2 partial pressure. Electron probe microanalyzer measurements reveal that the argon content of films decreases with increasing O2 partial pressure, whereas the O to Al composition ratio increases from 1.15 for films sputtered in pure argon gas to 1.5 for films sputtered in argon gas at O2 partial pressures over 2.4 × 10−2 Pa. X-ray diffraction measurements reveal that films sputtered in pure argon gas have an amorphous crystal structure, whereas γ-Al2O3 is produced for films sputtered in argon gas with added O2 gas. Atomic force microscopy observations reveal that the surface topography of sputtered Al2O3 films changes from spherical to needlelike as O2 partial pressure is increased. Fracture cross sections of the films observed by scanning electron microscopy reveal that the film morphology exhibits no discernible features at all O2 partial pressures.

  3. Effect of driving frequency on plasma property in radio frequency and very high frequency magnetron sputtering discharges

    International Nuclear Information System (INIS)

    Ion energy distributions (IEDs), electron energy distributions (EEDs) and other plasma parameters of magnetron sputtering discharges driven by 13.56, 27.12 and 60 MHz sources were investigated by a retarding field energy analyzer and Langmuir probe measurements. An increase in driving frequency leads to an increase in ion energy and the evolution of IEDs from a uni-modal distribution at the 13.56 MHz discharge toward a bi-modal distribution at 27.12 MHz, and a multi-modal distribution at the 60 MHz discharge. For IEDs near the target surface, this evolution is related to the ion acceleration and the charge transfer collisions between Ar atoms and Ar+ ions in the presheath, while for IEDs at the substrate, the evolution depends on the ratio of the ion transit time across the sheath to the radio frequency period. The increase in driving frequency also leads to the evolution of EED function from a Maxwellian type at the 13.56 MHz discharge toward a bi-Maxwellian type at the 27.12 MHz discharge and a Druyvesteyn-like type at the 60 MHz discharge due to the change in the generation and loss mechanisms of electrons. In addition, increasing the driving frequency can lead to a higher electron temperature and a lower electron density. Therefore, the driving frequency becomes an effective tool to control the plasma properties of magnetron sputtering discharges. (paper)

  4. Broad, intense, quiescent beam of singly charged metal ions obtained by extraction from self-sputtering plasma far above the runaway threshold

    Energy Technology Data Exchange (ETDEWEB)

    Anders, Andre; Oks, Efim

    2009-05-19

    Dense metal plasmas obtained by self-sputtering far above the runway threshold are well suited to generate intense quiescent ion beams. The dilemma of high current density and charge state purity can be solved when using target materials of low surface binding energy by utilizing non-resonant exchange reactions before ion extraction. Space-charge-limited quiescent beams of Cu+, Zn+, and Bi+ with ~;;10 mA/cm2 have been obtained through multi-aperture gridded ion extraction up to 45 kV from self-sputtering plasmas.

  5. Optical emission and mass spectroscopy of plasma processes in reactive DC pulsed magnetron sputtering

    Czech Academy of Sciences Publication Activity Database

    Novotný, Michal; Bulíř, Jiří; Pokorný, Petr; Bočan, Jiří; Fitl, Přemysl; Lančok, Ján; Musil, Jindřich

    Warrendale, PA : MRS, 2009. s. 14. ISBN N. [E-MRS 2009 Spring Meeting. 08.06.2009-12.06.2009, Strasbourg] R&D Projects: GA ČR GP202/09/P324 Institutional research plan: CEZ:AV0Z10100522 Keywords : reactive pulsed magnetron sputtering * optical emission spectroscopy * mass spectroscopy * alumina Subject RIV: BH - Optics, Masers, Lasers

  6. The relation between the plasma characteristic and the corrosion properties of TiN/Ti multilayers deposited by unbalanced magnetron sputtering

    International Nuclear Information System (INIS)

    The multilayers were prepared by balanced magnetron sputtering with a concentric electromagnet coil around the magnetron in order to produce a variable unbalance of the magnetron, and in this way provide changes in the ion bombardment of the substrate. It was observed that the additional magnetic field increased the plasma temperature as well as altering the other plasma characteristics. The field induced changes in the ion bombardment of the substrate and was found to modify the film microstructure. In this work monolayers of Ti and multiple TiN/Ti layers on H13 steel and stainless steel substrates were prepared by reactive magnetron sputtering, with the aim of improving the corrosion resistance. The ion current density incident on the substrate and the plasma parameters, such as, the electron temperature, plasma density, floating potential and plasma potential were studied as a function of the additional magnetic field. The composition of the films was determined by ion beam techniques. (Authors)

  7. Preparation of Ag-containing diamond-like carbon films on the interior surface of tubes by a combined method of plasma source ion implantation and DC sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Hatada, R., E-mail: hatada@ca.tu-darmstadt.de [Technische Universität Darmstadt, Department of Materials Science, 64287 Darmstadt (Germany); Flege, S.; Bobrich, A.; Ensinger, W.; Dietz, C. [Technische Universität Darmstadt, Department of Materials Science, 64287 Darmstadt (Germany); Baba, K. [Industrial Technology Center of Nagasaki, Applied Technology Division, Omura, Nagasaki 856-0026 (Japan); Sawase, T.; Watamoto, T. [Nagasaki University, Department of Applied Prosthodontics, Nagasaki 852-8523 (Japan); Matsutani, T. [Technische Universität Darmstadt, Department of Materials Science, 64287 Darmstadt (Germany); Kinki University, Department of Electric and Electronic Engineering, Higashi-osaka 577-2332 (Japan)

    2014-08-15

    Highlights: • Deposition of Ag-containing diamond-like carbon films inside of tubes. • Combination of plasma source ion implantation and DC sputtering. • Antibacterial effect against S. aureus bacteria. - Abstract: Adhesive diamond-like carbon (DLC) films can be prepared by plasma source ion implantation (PSII), which is also suitable for the treatment of the inner surface of a tube. Incorporation of a metal into the DLC film provides a possibility to change the characteristics of the DLC film. One source for the metal is DC sputtering. In this study PSII and DC sputtering were combined to prepare DLC films containing low concentrations of Ag on the interior surfaces of stainless steel tubes. A DLC film was deposited using a C{sub 2}H{sub 4} plasma with the help of an auxiliary electrode inside of the tube. This electrode was then used as a target for the DC sputtering. A mixture of the gases Ar and C{sub 2}H{sub 4} was used to sputter the silver. By changing the gas flow ratios and process time, the resulting Ag content of the films could be varied. Sample characterizations were performed by X-ray photoelectron spectroscopy, secondary ion mass spectrometry, atomic force microscopy and Raman spectroscopy. Additionally, a ball-on-disk test was performed to investigate the tribological properties of the films. The antibacterial activity was determined using Staphylococcus aureus bacteria.

  8. Preparation of Ag-containing diamond-like carbon films on the interior surface of tubes by a combined method of plasma source ion implantation and DC sputtering

    International Nuclear Information System (INIS)

    Highlights: • Deposition of Ag-containing diamond-like carbon films inside of tubes. • Combination of plasma source ion implantation and DC sputtering. • Antibacterial effect against S. aureus bacteria. - Abstract: Adhesive diamond-like carbon (DLC) films can be prepared by plasma source ion implantation (PSII), which is also suitable for the treatment of the inner surface of a tube. Incorporation of a metal into the DLC film provides a possibility to change the characteristics of the DLC film. One source for the metal is DC sputtering. In this study PSII and DC sputtering were combined to prepare DLC films containing low concentrations of Ag on the interior surfaces of stainless steel tubes. A DLC film was deposited using a C2H4 plasma with the help of an auxiliary electrode inside of the tube. This electrode was then used as a target for the DC sputtering. A mixture of the gases Ar and C2H4 was used to sputter the silver. By changing the gas flow ratios and process time, the resulting Ag content of the films could be varied. Sample characterizations were performed by X-ray photoelectron spectroscopy, secondary ion mass spectrometry, atomic force microscopy and Raman spectroscopy. Additionally, a ball-on-disk test was performed to investigate the tribological properties of the films. The antibacterial activity was determined using Staphylococcus aureus bacteria

  9. Structural and electrical properties of Nb-doped TiO2 films sputtered with plasma emission control

    International Nuclear Information System (INIS)

    A technique to deposit Nb-doped films of TiO2 by radio-frequency magnetron sputtering was investigated. Nb wires are put onto the sputter track of a metallic titanium target and the oxidation state of the target is controlled by the intensity of a Ti line from the plasma emission. The sputtered films are analyzed with X-ray diffraction, RBS (Rutherford back scattering), energy dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy and SEM (scanning electron microscopy). After post-heating at 400 °C, all films exhibit the anatase structure. The films are polycrystalline with a Nb/[Nb + Ti] content from 2 to 17 at.%. RBS and SEM indicate that the films consist of two sub-layers with the surface layer containing more Nb and exhibiting a clearer columnar structure. There is an optimum oxidation state of the target in the transition region between metallic and oxidic modes where the lowest resistivity of 7 × 10−4 Ωcm is achieved. Nb is incorporated as Nb5+ into the anatase lattice, but in suboptimal films, Ti vacancies (acceptors) may compensate the donor effect of Nb. The oxygen content in the films is higher than for stoichiometric TiO2. O interstitials may increase the mass density of the films. The lattice parameter a and the unit cell volume increase with the Nb content in a similar manner as observed for single crystals of TiO2:Nb. - Highlights: • Nb-doped TiO2 (pure anatase) films are grown by radio-frequency magnetron sputtering. • The content Nb/(Ti + Nb) ranges from 2 to 17 at.% for films post-heated at 400 °C. • Unit cell volume and conductivity increase with the Nb content in the films. • The oxidation state of the metallic target is controlled using plasma emission. • Best electrical properties (ρ = 7 × 10−4 Ωcm) are obtained for a 68%-oxidized target

  10. Nucleation of ultrathin silver layer by magnetron sputtering in Ar/N2 plasma

    Czech Academy of Sciences Publication Activity Database

    Bulíř, Jiří; Novotný, Michal; Lančok, Ján; Fekete, Ladislav; Drahokoupil, Jan; Musil, Jindřich

    2013-01-01

    Roč. 228, č. 1 (2013), S86-S90. ISSN 0257-8972 R&D Projects: GA ČR(CZ) GAP108/11/1298; GA ČR GP202/09/P324 Institutional support: RVO:68378271 Keywords : ultrathin silver * magnetron sputtering * spectral ellipsometry * in-situ monitoring Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.199, year: 2013

  11. Selective deposition of a crystalline Si film by a chemical sputtering process in a high pressure hydrogen plasma

    International Nuclear Information System (INIS)

    The selective deposition of Si films was demonstrated using a chemical sputtering process induced by a high pressure hydrogen plasma at 52.6 kPa (400 Torr). In this chemical sputtering process, the initial deposition rate (Rd) is dependent upon the substrate type. At the initial stage of Si film formation, Rd on glass substrates increased with elapsed time and reached to a constant value. In contrast, Rd on Si substrates remained constant during the deposition. The selective deposition of Si films can be achieved by adjusting the substrate temperature (Tsub) and hydrogen concentration (CH2) in the process atmosphere. For any given deposition time, it was found that an optimum CH2 exists for a given Tsub to realize the selective deposition of a Si film, and the optimum Tsub value tends to increase with decreasing CH2. According to electron diffraction patterns obtained from the samples, the selectively prepared Si films showed epitaxial-like growth, although the Si films contained many defects. It was revealed by Raman scattering spectroscopy that some of the defects in the Si films were platelet defects induced by excess hydrogen incorporated during Si film formation. Raman spectrum also suggested that Si related radicals (SiH2, SiH, Si) with high reactivity contribute to the Si film formation. Simple model was derived as the guideline for achieving the selective growth

  12. Application of Analytical Model of the Electric Potential Distribution for Calculation of Charged Particle Dynamics in a Near-Wall Layer and Sputtering of the Plasma Facing Surfaces

    Czech Academy of Sciences Publication Activity Database

    Borodkina, I.E.; Komm, Michael; Tsvetkov, I.V.

    2015-01-01

    Roč. 58, č. 4 (2015), s. 438-445. ISSN 1064-8887 Institutional support: RVO:61389021 Keywords : plasma-surface interaction * magnetic pre-layer * Debye layer * inclined magnetic field * sputtering Subject RIV: BL - Plasma and Gas Discharge Physics Impact factor: 0.671, year: 2014 http://link.springer.com/article/10.1007%2Fs11182-015-0518-5

  13. Microstructure and Mechanical Properties of CrN Films Deposited by Inductively Coupled Plasma Enhanced Radio Frequency Magnetron Sputtering

    Institute of Scientific and Technical Information of China (English)

    LIU Feng; MENG Yuedong; REN Zhaoxing; SHU Xingsheng

    2008-01-01

    CrN films have been synthesized on Si(100) wafer by inductively coupled plasma (ICP)-enhanced radio frequency (RF) magnetron sputtering. The effects of ICP power on mi-crostructure, crystal orientation, nanohardness and stress of the CrN films have been investigated. With the increase of ICP power, the current density at substrate increases and the films exhibit denser structure, while the DC self-bias of target and the deposition rate of films decrease. The films change from crystal structure to amorphous structure with the increase of ICP power. The measured nanohardness and the compressive stress of films reach the topmost at ICP power of 150 W and 200 W, respectively. The mechanical properties of films show strong dependence on the crystalline structure and the density influenced by the ICP power.

  14. The Structure and Properties of Inductively Coupled Plasma Assisted Magnetron Sputtered Nanocrystalline CrN Coatings in Corrosion Protective Die Casting Molds.

    Science.gov (United States)

    Chun, Sung-Yong

    2015-07-01

    Chromium nitride coatings for the surface modified die casting molds with various ICP powers have been prepared using ICP assisted magnetron sputtering. The applied ICP power was varied from 0 to 300 W. The deposited coatings were characterized post-deposition using X-ray diffractometry (XRD) and atomic force microscopy (AFM). Single CrN phased coatings with nano-grain sized (< 20 nm) were identified. The corrosion resistance and hardness of each coating were evaluated from potentiost at and nanoindentator. Superior corrosion protective coatings in excess of 20 GPa were deposited with assistance of ICP plasma during sputtering. PMID:26373141

  15. The impact of substrate bias on a remote plasma sputter coating process for conformal coverage of trenches and 3D structures

    International Nuclear Information System (INIS)

    With the progression towards higher aspect ratios and finer topographical dimensions in many micro- and nano-systems, it is of technological importance to be able to conformally deposit thin films onto such structures. Sputtering techniques have been developed to provide such conformal coverage through a combination of coating re-sputtering and ionised physical vapour deposition (IPVD), the latter by use of a secondary plasma source or a pulsed high target power (HiPIMS). This paper reports on the use of an alternate remote plasma sputtering technique in which a high density (>1013 cm−3) magnetised plasma is used for sputter deposition, and additionally is shown to provide IPVD and a re-sputtering capability. From the substrate I–V characteristics and optical emission spectroscopy (OES) data, it is shown that remote plasma sputtering is an inherently continuous IPVD process (without the need of a secondary discharge). Through the reactive deposition of Al2O3 onto complex structures, scanning electron microscopy (SEM) and energy dispersive x-ray spectroscopy (EDX) results demonstrate that applying a negative substrate bias during film growth can result in re-sputtering of deposited material and film growth on surfaces obscured from the initial sputter flux. Using 5 : 1 (height : width) aspect ratio trenches, the substrate bias was set to 0,−245 and  −334 V. At 0 V substrate bias, the alumina coating is predominantly deposited on the horizontal surfaces; at  −344 V, it is predominantly deposited onto the side walls and at  −245 V a more uniform layer thickness is obtained over the trench. The process was optimised further by alternating the substrate bias between  −222 and  −267 V, with a 50% residence time at each voltage, yielding a more uniform conformal coverage of the 5 : 1 aspect ratio structures over large areas. (paper)

  16. Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates

    International Nuclear Information System (INIS)

    Fully depleted silicon-on-insulator transistors were fabricated using two different metal gate deposition mechanisms to compare plasma damage effects on gate oxide quality. Devices fabricated with both plasma-enhanced atomic-layer-deposited (PE-ALD) TiN gates and magnetron plasma sputtered TiN gates showed very good electrostatics and short-channel characteristics. However, the gate oxide quality was markedly better for PE-ALD TiN. A significant reduction in interface state density was inferred from capacitance-voltage measurements as well as a 1200× reduction in gate leakage current. A high-power magnetron plasma source produces a much higher energetic ion and vacuum ultra-violet (VUV) photon flux to the wafer compared to a low-power inductively coupled PE-ALD source. The ion and VUV photons produce defect states in the bulk of the gate oxide as well as at the oxide-silicon interface, causing higher leakage and potential reliability degradation

  17. Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates

    Energy Technology Data Exchange (ETDEWEB)

    Brennan, Christopher J.; Neumann, Christopher M.; Vitale, Steven A., E-mail: steven.vitale@ll.mit.edu [Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02420 (United States)

    2015-07-28

    Fully depleted silicon-on-insulator transistors were fabricated using two different metal gate deposition mechanisms to compare plasma damage effects on gate oxide quality. Devices fabricated with both plasma-enhanced atomic-layer-deposited (PE-ALD) TiN gates and magnetron plasma sputtered TiN gates showed very good electrostatics and short-channel characteristics. However, the gate oxide quality was markedly better for PE-ALD TiN. A significant reduction in interface state density was inferred from capacitance-voltage measurements as well as a 1200× reduction in gate leakage current. A high-power magnetron plasma source produces a much higher energetic ion and vacuum ultra-violet (VUV) photon flux to the wafer compared to a low-power inductively coupled PE-ALD source. The ion and VUV photons produce defect states in the bulk of the gate oxide as well as at the oxide-silicon interface, causing higher leakage and potential reliability degradation.

  18. Characteristics of N-doped TiO2 thin films grown on unheated glass substrate by inductively coupled plasma assisted dc reactive magnetron sputtering

    International Nuclear Information System (INIS)

    N-doped TiO2 thin films have been deposited on unheated glass substrates by an inductively coupled plasma (ICP) assisted direct current (dc) reactive magnetron sputtering. All films were produced in the metallic mode of sputtering in order to achieve a high deposition rate. The structures and properties of the N-doped TiO2 films were studied by X-ray diffraction, X-ray photoelectron spectroscopy, transmission electron microscopy, field emission scanning electron microscopy and UV-Vis spectrophotometer. Experimental results show that we can obtain well crystallized N-doped anatase phase TiO2 thin films at low deposition temperature and at high deposition rate by using the ICP assisted dc reactive magnetron sputtering process. The doping of nitrogen into TiO2 lattices leads to a smooth shift of the absorption band toward visible light regions.

  19. Very deep spectroscopy of the bright Saturn Nebula NGC 7009 -- I. Observations and plasma diagnostics

    CERN Document Server

    Fang, X

    2011-01-01

    We present very deep CCD spectrum of the bright, medium-excitation planetary nebula NGC 7009, with a wavelength coverage from 3040 to 11000 A. Traditional emission line identification is carried out to identify all the emission features in the spectra, based on the available laboratory atomic transition data. Since the spectra are of medium resolution, we use multi-Gaussian line profile fitting to deblend faint blended lines, most of which are optical recombination lines (ORLs) emitted by singly ionized ions of abundant second-row elements such as C, N, O and Ne. Computer-aided emission-line identification, using the code EMILI developed by Sharpee et al., is then employed to further identify all the emission lines thus obtained. In total about 1200 emission features are identified, with the faintest ones down to fluxes 10^{-4} of H_beta. The flux errors for all emission lines, estimated from multi-Gaussian fitting, are presented. Plots of the whole optical spectrum, identified emission lines labeled, are pre...

  20. Atomic and plasma-material interaction data for fusion. V. 7, part B. Particle induced erosion of Be, C and W in fusion plasmas. Part B: Physical sputtering and radiation-enhanced sublimation

    International Nuclear Information System (INIS)

    The present volume of Atomic and Plasma-Material Interaction Data for Fusion is devoted to a critical review of the physical sputtering and radiation enhanced sublimation (RES) behaviour of fusion plasma-facing materials, in particular carbon, beryllium and tungsten. The present volume is intended to provide fusion reactor designers a detailed survey and parameterization of existing, critically assessed data for the chemical erosion of plasma-facing materials by particle impact. The survey and data compilation is presented for a variety of materials containing the elements C, Be and W (including dopants in carbon materials) and impacting plasma species. The dependencies of physical sputtering and RES yields on the material temperature, incident projectile energy, and incident flux are considered. The main data compilation is presented as separate data sheets indicating the material, impacting plasma species, experimental conditions, and parameterizations in terms of analytic functions

  1. Bright and photostable push-pull pyrene dye visualizes lipid order variation between plasma and intracellular membranes

    Science.gov (United States)

    Niko, Yosuke; Didier, Pascal; Mely, Yves; Konishi, Gen-Ichi; Klymchenko, Andrey S.

    2016-01-01

    Imaging lipid organization in cell membranes requires advanced fluorescent probes. Here, we show that a recently synthesized push-pull pyrene (PA), similarly to popular probe Laurdan, changes the emission maximum as a function of lipid order, but outperforms it by spectroscopic properties. In addition to red-shifted absorption compatible with common 405 nm diode laser, PA shows higher brightness and much higher photostability than Laurdan in apolar membrane environments. Moreover, PA is compatible with two-photon excitation at wavelengths >800 nm, which was successfully used for ratiometric imaging of coexisting liquid ordered and disordered phases in giant unilamellar vesicles. Fluorescence confocal microscopy in Hela cells revealed that PA efficiently stains the plasma membrane and the intracellular membranes at >20-fold lower concentrations, as compared to Laurdan. Finally, ratiometric imaging using PA reveals variation of lipid order within different cellular compartments: plasma membranes are close to liquid ordered phase of model membranes composed of sphingomyelin and cholesterol, while intracellular membranes are much less ordered, matching well membranes composed of unsaturated phospholipids without cholesterol. These differences in the lipid order were confirmed by fluorescence lifetime imaging (FLIM) at the blue edge of PA emission band. PA probe constitutes thus a new powerful tool for biomembrane research.

  2. Note: Easy-to-maintain electron cyclotron resonance (ECR) plasma sputtering apparatus featuring hybrid waveguide and coaxial cables for microwave delivery

    Science.gov (United States)

    Akazawa, Housei

    2016-06-01

    The branched-waveguide electron cyclotron resonance plasma sputtering apparatus places quartz windows for transmitting microwaves into the plasma source not in the line of sight of the target. However, the quartz windows must be replaced after some time of operation. For maintenance, the loop waveguide branching from the T-junction must be dismounted and re-assembled accurately, which is a time-consuming job. We investigated substituting the waveguide branches with two sets of coaxial cables and waveguide/coaxial cable converters to simplify assembly as far as connection and disconnection go. The resulting hybrid system worked well for the purposes of plasma generation and film deposition.

  3. Plasma deposition of piezoelectric ZnO layers by rf sputtering, SolGel and pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Waetje, Kerstin; Ebbecke, Jens; Wixforth, A. [Institut fuer Physik der Universitaet Augsburg, Experimentalphysik I, Universitaetsstrasse 1, 86135 Augsburg (Germany); Thorwarth, Goetz; Ven, Mark van de [Institut fuer Physik der Universitaet Augsburg, Experimentalphysik IV, Universitaetsstrasse 1, 86135 Augsburg (Germany)

    2008-07-01

    As ''lab-on-a-chip-devices'' suited for analyses of least amounts of liquids are emerging from prototype status, cost-effective materials for mass production of these devices are sought. For handling and mixing components, surface acoustic waves generated by piezoelectric elements are routinely employed; however, the LiNbO{sub 3} single crystals used in such units are a significant cost factor. As an alternative, zinc oxide layers deposited onto the glass substrates hold the promise of cheaper production and easier integration into the assembly. In the present study, experiments regarding the deposition of such layers using different plasma processes are presented. Film synthesis was performed using rf magnetron sputtering, pulsed laser deposition and plasma based ion bombardment of Sol-Gel films on crystalline and amorphous substrates. The impacts of significant deposition parameters are discussed. At optimum deposition parameters, excellent columnar growth in the preferred c-axis orientation could be observed. The suitability of such films for the desired application is substanciated through first mixing experiments using optically lithographed interdigital transducers (IDTs). (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  4. Ratio of Cu, Zn, Sn and S densities in magnetron sputtering plasmas employing a stoichiometric Cu2ZnSnS4 target

    Science.gov (United States)

    Nafarizal, Nayan; Sasaki, Koichi

    2015-09-01

    Recently, Cu2ZnSnS4 (CZTS) has drawn wide attention as a highly potential material for the next-generation thin film solar cells. In order to optimize CZTS thin films for solar cells, it is essential to understand their deposition mechanism. Especially since it consists of four elements, it is difficult to control the stoichiometric properties. In the present work, we measured the absolute ground-state densities of Cu, Zn, Sn, and S atoms released from a stoichiometric CZTS target in magnetron sputtering plasmas. The absolute atom densities were evaluated by ultraviolet and vacuum ultraviolet absorption spectroscopy. Magnetron sputtering plasmas were produced using a pulsed-modulated rf power supply and the temporal variations of atom densities were measured in the afterglow. The absolute Cu, Zn, Sn and S densities in the discharge phase were evaluated by the extrapolations of the temporal variations. It has been observed that the absolute Cu, Zn, Sn and S densities in the gas phase were not in agreement with the stoichiometry of the target as well as that of the deposited film. The results suggest possibilities of unconventional sputtering and deposition processes in the compound sputter deposition.

  5. A study of reactive sputter etching by directed ion beams and R.F. plasmas.

    OpenAIRE

    Revell, Peter James

    1982-01-01

    This work compares the alternative methods of etching silicon semiconductor materials. Conventional methods of pattern delineation using aqueous etchants are being replaced for some applications by dry processing. The reasons for the move towards plasma and ion beam etching are examined particularly in relation to very large scale integration (VLSI) technology and the required reduction in feature size. A review of the published information on the use of reactive gas plasmas shows that this e...

  6. Magnetron Plasma Sputtered Nanocomposite Thin Films: Structural Surface Studies by In Vacuo Photoelectron Spectroscopy

    International Nuclear Information System (INIS)

    The experimental system that enables thin film deposition by chemical vapor deposition combined with magnetron sputtering and sample surface characterization by photoelectron spectroscopy (PES), without breaking the vacuum between the deposition and the characterization stage, is described. The particular goal of this work was study of the surface arrangement of embedded metallic nanoclusters of 1B group (Au, Ag, and Cu) in amorphous hydrogenated carbon (a-C:H). From the range of applied material characterization tools, we present here the results of several PES-based experiments used to reveal cluster properties at the surface: as-deposited sample PES measurements, off-normal take-off angle XPS, and in situ in-depth XPS profiling by Ar+ ion etching. Clear distinction in all PES results of the samples deposited on the grounded substrates from those deposited on -150 V dc biased ones is obtained, revealing that keeping the substrate grounded during deposition results in topmost metallic clusters covered with a very thin layer of a-C:H, while applying negative bias voltage to the substrate results in partially bald clusters on the surface

  7. A combined sensor for the diagnostics of plasma and film properties in magnetron sputtering processes

    International Nuclear Information System (INIS)

    A combined sensor for the simultaneous measurement of plasma and deposition parameters has been designed and built. It comprises (i) a quartz crystal microbalance, (ii) a planar Langmuir probe and (iii) a calorimetric (Gardon) probe, which allows to measure the deposition rate, typical plasma parameters (plasma density and electron temperature) and the total energy input into a growing film. The combined sensor is electrically insulated against ground, allowing these measurements also for floating or substrate-bias conditions. These parameters are measured (nearly) simultaneously, controlled by a specific measurement and analysis program. The operation of this combined sensor is demonstrated for the deposition of copper and tungsten films with a 2 inch planar magnetron. - Highlights: ►A combined sensor was developed for the analysis of plasma and deposition parameters. ►It consists of a quartz crystal microbalance, a Langmuir and a calorimetric probe. ►It allows to measure the deposition rate, plasma density and the total energy input. ►It allows a fast analysis of particle and energy fluxes on a growing film.

  8. Composite SiOx/fluorocarbon plasma polymer films prepared by r.f. magnetron sputtering of SiO2 and PTFE

    Czech Academy of Sciences Publication Activity Database

    Pihosh, Y.; Biederman, H.; Slavínská, D.; Kousal, J.; Choukourov, A.; Trchová, Miroslava; Macková, Anna; Boldyryeva, Hanna

    2006-01-01

    Roč. 81, 1-4 (2006), s. 38-44. ISSN 0042-207X R&D Projects: GA MŠk OC 527.10; GA MŠk ME 553 Institutional research plan: CEZ:AV0Z40500505; CEZ:AV0Z10480505 Keywords : composite films * magnetron * sputtering Subject RIV: BL - Plasma and Gas Discharge Physics Impact factor: 0.834, year: 2006

  9. Composite SiO.sub.x./sub./hydrocarbon plasma polymer films prepared by RF magnetron sputtering of SiO.sub.2./sub. and polyethylene or polypropylene

    Czech Academy of Sciences Publication Activity Database

    Pihosh, Y.; Biederman, H.; Slavínská, D.; Kousal, J.; Choukourov, A.; Trchová, Miroslava; Macková, Anna; Boldyryeva, Hanna

    2006-01-01

    Roč. 81, 1-4 (2006), s. 32-37. ISSN 0042-207X R&D Projects: GA MŠk 1P05ME754 Institutional research plan: CEZ:AV0Z40500505; CEZ:AV0Z10480505 Keywords : composite films * magnetron * sputtering Subject RIV: BL - Plasma and Gas Discharge Physics Impact factor: 0.834, year: 2006

  10. Ionization of sputtered Ti, Al, and C coupled with plasma characterization in HiPIMS

    Czech Academy of Sciences Publication Activity Database

    Lundin, D.; Čada, Martin; Hubička, Zdeněk

    2015-01-01

    Roč. 24, č. 3 (2015), s. 035018. ISSN 0963-0252 R&D Projects: GA MŠk LH12043 EU Projects: European Commission(XE) 608800 - HIPPOCAMP Institutional support: RVO:68378271 Keywords : IPVD * HiPIMS * HPPMS * Langmuir probe * ion meter Subject RIV: BL - Plasma and Gas Discharge Physics Impact factor: 3.591, year: 2014

  11. Characterization and modelling of microwave multi dipole plasmas. Application to multi dipolar plasma assisted sputtering; Caracterization et modelisation des plasmas micro-onde multi-dipolaires. Application a la pulverisation assistee par plasma multi-dipolaire

    Energy Technology Data Exchange (ETDEWEB)

    Tran, Tan Vinh [Universite Joseph Fourier/CNRS-IN2P3, 53 Avenue des Martyrs, F-38026 Grenoble (France)

    2006-07-01

    the magnet has also shown a better radial confinement with magnets exhibiting high length over diameter ratios. In addition, the numerical study corroborates the results of the experimental study, i.e. an ECR coupling region close to the equatorial plane of the magnet and not near the end of the coaxial microwave line. Finally, these results have been successfully applied to plasma assisted sputtering of targets allowing, in particular, their uniform erosion. (author)

  12. Oxidation behavior of metallic interconnect coated with La-Sr-Mn film by screen painting and plasma sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Chu, Chun-Lin; Lee, Tien-Hsi [Department of Mechanical Engineering, National Central University, Chung-Li (China); Lee, Jye [Department of Electrical Engineering, Chang Gung University, Tao-Yuan (China); Cheng, Yung-Neng [Institute of Nuclear Energy Research (China)

    2009-01-15

    Two Fe-based alloys, specific company developed and designated as Crofer22APU and ZMG232, have been extensively evaluated and considered as outstanding metallic interconnect materials. Both these alloys contain significant and minute amounts of elemental Cr and La, respectively. In this study, they are coated with films of La-Sr-Mn (LSM) using two methods, screen painting and plasma sputtering, to determine the effect of LSM on corrosion resistance and electrical resistivity of Crofer22APU and ZMG232. They were then treated in a simulated oxidizing environment at 800 C for 200 h. Analytical results indicate that the LSM film changed the oxidation behavior of the base alloys, Crofer22 APU and ZMG232. The bare alloys formed Cr{sub 2}O{sub 3}, while the coated alloys produced (Mn, Fe) Cr{sub 2}O{sub 4}. The electrical resistance of the former oxide at high temperature is several thousand times higher than that of the latter oxide. This remarkable effect of the LSM film on the electrical characteristics warrants further in-depth research. (author)

  13. The use of segmented cathodes to determine the spoke current density distribution in high power impulse magnetron sputtering plasmas

    Science.gov (United States)

    Poolcharuansin, Phitsanu; Estrin, Francis Lockwood; Bradley, James W.

    2015-04-01

    The localized target current density associated with quasi-periodic ionization zones (spokes) has been measured in a high power impulse magnetron sputtering (HiPIMS) discharge using an array of azimuthally separated and electrical isolated probes incorporated into a circular aluminum target. For a particular range of operating conditions (pulse energies up to 2.2 J and argon pressures from 0.2 to 1.9 Pa), strong oscillations in the probe current density are seen with amplitudes up to 52% above a base value. These perturbations, identified as spokes, travel around the discharge above the target in the E×B direction. Using phase information from the angularly separated probes, the spoke drift speeds, angular frequencies, and mode number have been determined. Generally, at low HiPIMS pulse energies Ep velocities between 6.5 and 10 km s-1 and mode numbers m = 3 or above. At Ep > 1.8 J, the plasma becomes spoke-free. The boundaries between chaotic, coherent, and no-spoke regions are weakly dependent on pressure. During each HiPIMS pulse, the spoke velocities increase by about 50%. Such an observation is explained by considering spoke velocities to be determined by the critical ionization velocity, which changes as the plasma composition changes during the pulse. From the shape of individual current density oscillations, it appears that the leading edge of the spoke is associated with a slow increase in local current density to the target and the rear with a more rapid decrease. The measurements show that the discharge current density associated with individual spokes is broadly spread over a wide region of the target.

  14. The use of segmented cathodes to determine the spoke current density distribution in high power impulse magnetron sputtering plasmas

    Energy Technology Data Exchange (ETDEWEB)

    Poolcharuansin, Phitsanu [Department of Electrical Engineering and Electronics, University of Liverpool, Brownlow Hill, Liverpool L69 3GJ (United Kingdom); The Technological Plasma Research Unit, Department of Physics, Mahasarakham University, Maha Sarakham 44150 (Thailand); Estrin, Francis Lockwood; Bradley, James W., E-mail: j.w.bradley@liverpool.ac.uk [Department of Electrical Engineering and Electronics, University of Liverpool, Brownlow Hill, Liverpool L69 3GJ (United Kingdom)

    2015-04-28

    The localized target current density associated with quasi-periodic ionization zones (spokes) has been measured in a high power impulse magnetron sputtering (HiPIMS) discharge using an array of azimuthally separated and electrical isolated probes incorporated into a circular aluminum target. For a particular range of operating conditions (pulse energies up to 2.2 J and argon pressures from 0.2 to 1.9 Pa), strong oscillations in the probe current density are seen with amplitudes up to 52% above a base value. These perturbations, identified as spokes, travel around the discharge above the target in the E×B direction. Using phase information from the angularly separated probes, the spoke drift speeds, angular frequencies, and mode number have been determined. Generally, at low HiPIMS pulse energies E{sub p} < 0.8 J, spokes appear to be chaotic in nature (with random arrival times), however as E{sub p} increases, coherent spokes are observed with velocities between 6.5 and 10 km s{sup −1} and mode numbers m = 3 or above. At E{sub p} > 1.8 J, the plasma becomes spoke-free. The boundaries between chaotic, coherent, and no-spoke regions are weakly dependent on pressure. During each HiPIMS pulse, the spoke velocities increase by about 50%. Such an observation is explained by considering spoke velocities to be determined by the critical ionization velocity, which changes as the plasma composition changes during the pulse. From the shape of individual current density oscillations, it appears that the leading edge of the spoke is associated with a slow increase in local current density to the target and the rear with a more rapid decrease. The measurements show that the discharge current density associated with individual spokes is broadly spread over a wide region of the target.

  15. The use of segmented cathodes to determine the spoke current density distribution in high power impulse magnetron sputtering plasmas

    International Nuclear Information System (INIS)

    The localized target current density associated with quasi-periodic ionization zones (spokes) has been measured in a high power impulse magnetron sputtering (HiPIMS) discharge using an array of azimuthally separated and electrical isolated probes incorporated into a circular aluminum target. For a particular range of operating conditions (pulse energies up to 2.2 J and argon pressures from 0.2 to 1.9 Pa), strong oscillations in the probe current density are seen with amplitudes up to 52% above a base value. These perturbations, identified as spokes, travel around the discharge above the target in the E×B direction. Using phase information from the angularly separated probes, the spoke drift speeds, angular frequencies, and mode number have been determined. Generally, at low HiPIMS pulse energies Ep < 0.8 J, spokes appear to be chaotic in nature (with random arrival times), however as Ep increases, coherent spokes are observed with velocities between 6.5 and 10 km s−1 and mode numbers m = 3 or above. At Ep > 1.8 J, the plasma becomes spoke-free. The boundaries between chaotic, coherent, and no-spoke regions are weakly dependent on pressure. During each HiPIMS pulse, the spoke velocities increase by about 50%. Such an observation is explained by considering spoke velocities to be determined by the critical ionization velocity, which changes as the plasma composition changes during the pulse. From the shape of individual current density oscillations, it appears that the leading edge of the spoke is associated with a slow increase in local current density to the target and the rear with a more rapid decrease. The measurements show that the discharge current density associated with individual spokes is broadly spread over a wide region of the target

  16. Nano-structuring of PTFE surface by plasma treatment, etching, and sputtering with gold

    Czech Academy of Sciences Publication Activity Database

    Reznickova, A.; Kolská, Z.; Hnatowicz, Vladimír; Svorcik, V.

    2011-01-01

    Roč. 13, č. 7 (2011), s. 2929-2938. ISSN 1388-0764 R&D Projects: GA ČR GA106/09/0125; GA MŠk(CZ) LC06041 Institutional research plan: CEZ:AV0Z10480505 Keywords : ARGON PLASMA * POLYMER-FILMS * POLYETHYLENE * DISCHARGE * POLYETHYLENETEREPHTHALATE Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 3.287, year: 2011

  17. Study of hysteresis behavior in reactive sputtering of cylindrical magnetron plasma

    Science.gov (United States)

    Kakati, H.; M. Borah, S.

    2015-12-01

    In order to make sufficient use of reactive cylindrical magnetron plasma for depositing compound thin films, it is necessary to characterize the hysteresis behavior of the discharge. Cylindrical magnetron plasmas with different targets namely titanium and aluminium are studied in an argon/oxygen and an argon/nitrogen gas environment respectively. The aluminium and titanium emission lines are observed at different flows of reactive gases. The emission intensity is found to decrease with the increase of the reactive gas flow rate. The hysteresis behavior of reactive cylindrical magnetron plasma is studied by determining the variation of discharge voltage with increasing and then reducing the flow rate of reactive gas, while keeping the discharge current constant at 100 mA. Distinct hysteresis is found to be formed for the aluminium target and reactive gas oxygen. For aluminium/nitrogen, titanium/oxygen and titanium/nitrogen, there is also an indication of the formation of hysteresis; however, the characteristics of variation from metallic to reactive mode are different in different cases. The hysteresis behaviors are different for aluminium and titanium targets with the oxygen and nitrogen reactive gases, signifying the difference in reactivity between them. The effects of the argon flow rate and magnetic field on the hysteresis are studied and explained. Project supported by the Department of Science and Technology, Government of India and Council of Scientific and Industrial Research, India.

  18. In situ tensile tests in SEM of sputtered CN x films deposited on Ti6Al4V substrate: effect of film thickness and plasma surface pretreatment

    International Nuclear Information System (INIS)

    To evaluate the mechanical behaviour of CN x thin films deposited on a Ti6Al4V titanium alloy by RF magnetron sputtering, in situ tensile tests in a scanning electron microscope were performed. Sputtered films were deposited on one side of Ti6Al4V samples using a conventional magnetron sputtering system with a graphite target and Ar/N2 plasma. The amount of nitrogen in film was about 30 at.%. Three film thicknesses (100, 300, and 800 nm) were tested, and different surface pretreatments before deposition were applied in order to improve film adhesion: inductive plasma generated by an additional RF antenna (ionized magnetron sputtering, or IMS) and plasma immersion ion implantation (PIII). A very low tensile strain rate was chosen (0.05 mm/min) in order to follow in situ the deformation and damaging phenomena that could appear during the test. The films revealed a brittle behaviour: straight lines of fracture perpendicular to the loading axis systematically appeared. However, the total strain amplitude at which the earlier traces of damage in the film were detected greatly differed according to its thickness, or to the surface pretreatment. The characteristics of the fracture process were also highly influenced by these parameters: length and distribution of cracks, average spacing between cracks at saturation, relationship with the local plasticity activity in the substrate, etc. Blistering and peeling off the film quasi-systematically followed the early stage of cracking often for the highest strain amplitudes. Finally, it was shown that the fracture resistance is better for thinnest films and that the nitriding of the upper surface layers of the substrate by PIII improves the adherence of films

  19. Role of hydrogen addition in the plasma phase in determining the structural and chemical properties of RF sputtered ZnO films

    International Nuclear Information System (INIS)

    Research highlights: → Effects of H in corporation on ZnO thin films growth and properties. → Modification of the sputtering mechanism according to H2 percentage in the plasma. → Structural changes turns up with variations of the surface and bulk oxide chemistry. → Development of an hydroxide component due to atomic H incorporation. - Abstract: In the present work, ZnO thin films were RF sputtered from a pure ZnO target, without external heating, in H2:Ar plasma at different H2 concentrations (0-50%). Aim of the study was the identification of the effects of H incorporation on the film growth and properties. During the deposition experiments, optical emission (OES) spectra were recorded to monitor any variation in the plasma chemical species relative to different process or gas mixture settings. X-ray photoelectron spectroscopy (XPS) and attenuated total reflection Fourier-transformed infrared spectroscopy (ATR-FTIR) were used to study the bulk and surface chemical composition of the films, while X-ray diffraction (XRD) analysis allowed lattice structure and grain size determination. The introduction of hydrogen in the plasma phase appears to strongly affect the structural and chemical properties of ZnO films. Both FTIR spectra and X-ray diffraction patterns showed that all the films crystallized in the hexagonal wuertzite form. Nevertheless, while samples deposited in pure Ar plasma are highly textured, presenting just one dominant preferred orientation along the [0 0 2] axis, films sputtered in H2:Ar atmosphere exhibit multiple growth directions with crystallites of noticeably reduced dimensions. Such a structural modification turns up together with clear variations in the films surface chemical state which appears to deviate from the pure oxide (Zn-O). By combining XPS, ATR-FTIR and OES data we could correlate such variations with the process induced H incorporation in the crystal structure in the form of hydroxide species.

  20. Role of hydrogen addition in the plasma phase in determining the structural and chemical properties of RF sputtered ZnO films

    Energy Technology Data Exchange (ETDEWEB)

    Gottardi, Gloria, E-mail: ggottard@fbk.eu [Fondazione Bruno Kessler, Center for Materials and Microsystems, PAM Unit, via Sommarive 18, I - 38123 Povo, Trento (Italy); Bartali, Ruben; Micheli, Victor; Laidani, Nadhira [Fondazione Bruno Kessler, Center for Materials and Microsystems, PAM Unit, via Sommarive 18, I - 38123 Povo, Trento (Italy); Avi, Damiano [University of Trento, Physics Department, Atomic and Molecular Physics Lab., Via Sommarive 14, I - 38123 Povo, Trento (Italy)

    2011-05-16

    Research highlights: {yields} Effects of H in corporation on ZnO thin films growth and properties. {yields} Modification of the sputtering mechanism according to H{sub 2} percentage in the plasma. {yields} Structural changes turns up with variations of the surface and bulk oxide chemistry. {yields} Development of an hydroxide component due to atomic H incorporation. - Abstract: In the present work, ZnO thin films were RF sputtered from a pure ZnO target, without external heating, in H{sub 2}:Ar plasma at different H{sub 2} concentrations (0-50%). Aim of the study was the identification of the effects of H incorporation on the film growth and properties. During the deposition experiments, optical emission (OES) spectra were recorded to monitor any variation in the plasma chemical species relative to different process or gas mixture settings. X-ray photoelectron spectroscopy (XPS) and attenuated total reflection Fourier-transformed infrared spectroscopy (ATR-FTIR) were used to study the bulk and surface chemical composition of the films, while X-ray diffraction (XRD) analysis allowed lattice structure and grain size determination. The introduction of hydrogen in the plasma phase appears to strongly affect the structural and chemical properties of ZnO films. Both FTIR spectra and X-ray diffraction patterns showed that all the films crystallized in the hexagonal wuertzite form. Nevertheless, while samples deposited in pure Ar plasma are highly textured, presenting just one dominant preferred orientation along the [0 0 2] axis, films sputtered in H{sub 2}:Ar atmosphere exhibit multiple growth directions with crystallites of noticeably reduced dimensions. Such a structural modification turns up together with clear variations in the films surface chemical state which appears to deviate from the pure oxide (Zn-O). By combining XPS, ATR-FTIR and OES data we could correlate such variations with the process induced H incorporation in the crystal structure in the form of

  1. Correlation between optical characterization of the plasma in reactive magnetron sputtering deposition of Zr N on SS 316L and surface and mechanical properties of the deposited films

    Science.gov (United States)

    Fragiel, A.; Machorro, R.; Muñoz-Saldaña, J.; Salinas, J.; Cota, L.

    2008-05-01

    Optical and surface spectroscopies as well as nanoindentation techniques have been used to study ZrN coatings on 316L stainless steel obtained by DC-reactive magnetron sputtering. The deposit process was carried out using initial and working pressures of 10 -6 Torr and 10 -3 Torr, respectively. The experimental set-up for optical spectra acquisition was designed for the study in situ of the plasma in the deposition chamber. Auger spectroscopy, SEM and X-ray diffraction were used to characterize the coatings. Nanoindentation tests were carried out to measure the mechanical properties of the coating. Plasma characterization revealed the presence of CN molecules and Cr ions in the plasma. Surface spectroscopy results showed that ZrN, Zr 3N 4 and ZrC coexist in the coating. These results allowed the understanding of the mechanical behavior of the coatings, demonstrating the importance of the plasma characterization as a tool for tailoring the properties of hard coatings.

  2. Electrochromic performance of NiVxOy thin films deposited onto flexible PET/ITO substrates by reactive plasma sputtering for flexible electrochromic devices

    International Nuclear Information System (INIS)

    An investigation was conducted on the electrochromic properties of plasma sputtered-nickel-vanadium oxide thin films on 40 Ω/□ flexible polyethylene terephthalate/indium tin oxide substrates. Metallic Ni0.93V0.07 target, sputtered by radio frequency power with argon gases and reacted with oxygen gases at room temperature (23 oC), was proven to provide extraordinary electrochromic performance. Cyclic voltammetry switching measurements found that only low driving voltages from - 1 V to 1 V were needed to provide reversible Li+ ion intercalation and deintercalation. The light modulation with up to 52% of transmittance variation, optical density change of 0.446 and color efficiency of 63.8 cm2/C at a wavelength of 550 nm was obtained for 200 cycles of Li+ intercalation and deintercalation in a 1 M LiClO4-propylene carbonate electrolyte.

  3. In situ UV-vis investigation of growth of gold nanoparticles prepared by solution plasma sputtering in NaCl solution

    Science.gov (United States)

    Mizutani, Tsuyoshi; Ogawa, Satoshi; Murai, Takaaki; Nameki, Hirofumi; Yoshida, Tomoko; Yagi, Shinya

    2015-11-01

    Gold nanoparticles are prepared in various concentrations of NaCl solutions by solution plasma sputtering. The absorption spectra of these solutions during and after the plasma process are measured by in situ ultraviolet-visible (UV-vis) spectroscopy to estimate the particle diameters and concentrations of gold. The distributions of particle diameters are obtained by transmission electron microscope (TEM) observations. These experiments indicate the gold nanoparticles with about 2.2 nm are directly formed by plasma phase and the diameters are increasing over time. These increases of particle diameters are caused by Ostwald ripening of gold nanoparticles in NaCl solution. We estimate the equilibrium diameter at which the gold nanoparticles are not solved in NaCl solution using in situ UV-vis spectroscopy. These diameters are about 5, 7 and 10 nm in 3, 5 and 10 mM NaCl solution, respectively. We make it possible to control the diameter of gold nanoparticles prepared by solution plasma sputtering in NaCl solution.

  4. Amorphous silicon carbon films prepared by hybrid plasma enhanced chemical vapor/sputtering deposition system: Effects of r.f. power

    International Nuclear Information System (INIS)

    Silicon carbon films were deposited using a hybrid radio frequency (r.f.) plasma enhanced chemical vapor deposition (PECVD)/sputtering deposition system at different r.f. powers. This deposition system combines the advantages of r.f. PECVD and sputtering techniques for the deposition of silicon carbon films with the added advantage of eliminating the use of highly toxic silane gas in the deposition process. Silicon (Si) atoms were sputtered from a pure amorphous silicon (a-Si) target by argon (Ar) ions and carbon (C) atoms were incorporated into the film from C based growth radicals generated through the discharge of methane (CH4) gas. The effects of r.f. powers of 60, 80, 100, 120 and 150 W applied during the deposition process on the structural and optical properties of the films were investigated. Raman spectroscopic studies showed that the silicon carbon films contain amorphous silicon carbide (SiC) and amorphous carbon (a-C) phases. The r.f. power showed significant influence on the C incorporation in the film structure. The a-C phases became more ordered in films with high C incorporation in the film structure. These films also produced high photoluminescence emission intensity at around 600 nm wavelength as a result of quantum confinement effects from the presence of sp2 C clusters embedded in the a-SiC and a-C phases in the films. - Highlights: ► Effects of radio frequency (r.f.) power on silicon carbon (SiC) films were studied. ► Hybrid plasma enhanced chemical vapor deposition/sputtering technique was used. ► r.f. power influences C incorporation in the film structure. ► High C incorporation results in higher ordering of the amorphous C phase. ► These films produced high photoluminescence emission intensity

  5. Plasma sputtering robotic device for in-situ thick coatings of long, small diameter vacuum tubes

    Energy Technology Data Exchange (ETDEWEB)

    Hershcovitch, A., E-mail: hershcovitch@bnl.gov; Blaskiewicz, M.; Brennan, J. M.; Fischer, W.; Liaw, C.-J.; Meng, W.; Todd, R. [Brookhaven National Laboratory, Upton, New York 11973 (United States); Custer, A.; Dingus, A.; Erickson, M.; Jamshidi, N.; Laping, R.; Poole, H. J. [PVI, Oxnard, California 93031 (United States)

    2015-05-15

    A novel robotic plasma magnetron mole with a 50 cm long cathode was designed, fabricated, and operated. The reason for this endeavor is to alleviate the problems of unacceptable resistive heating of stainless steel vacuum tubes in the BNL Relativistic Heavy Ion Collider (RHIC). The magnetron mole was successfully operated to copper coat an assembly containing a full-size, stainless steel, cold bore, RHIC magnet tubing connected to two types of RHIC bellows, to which two additional pipes made of RHIC tubing were connected. To increase the cathode lifetime, a movable magnet package was developed, and the thickest possible cathode was made, with a rather challenging target to substrate (de facto anode) distance of less than 1.5 cm. Achieving reliable steady state magnetron discharges at such a short cathode to anode gap was rather challenging, when compared to commercial coating equipment, where the target to substrate distance is 10's cm; 6.3 cm is the lowest experimental target to substrate distance found in the literature. Additionally, the magnetron developed during this project provides unique omni-directional uniform coating. The magnetron is mounted on a carriage with spring loaded wheels that successfully crossed bellows and adjusted for variations in vacuum tube diameter, while keeping the magnetron centered. Electrical power and cooling water were fed through a cable bundle. The umbilical cabling system is driven by a motorized spool. Excellent coating adhesion was achieved. Measurements indicated that well-scrubbed copper coating reduced secondary electron yield to 1, i.e., the problem of electron clouds can be eliminated. Room temperature RF resistivity measurement indicated that a 10 μm copper coated stainless steel RHIC tube has a conductivity close to that of pure copper tubing. Excellent coating adhesion was achieved. The device details and experimental results are described.

  6. Plasma sputtering robotic device for in-situ thick coatings of long, small diameter vacuum tubesa)

    Science.gov (United States)

    Hershcovitch, A.; Blaskiewicz, M.; Brennan, J. M.; Custer, A.; Dingus, A.; Erickson, M.; Fischer, W.; Jamshidi, N.; Laping, R.; Liaw, C.-J.; Meng, W.; Poole, H. J.; Todd, R.

    2015-05-01

    A novel robotic plasma magnetron mole with a 50 cm long cathode was designed, fabricated, and operated. The reason for this endeavor is to alleviate the problems of unacceptable resistive heating of stainless steel vacuum tubes in the BNL Relativistic Heavy Ion Collider (RHIC). The magnetron mole was successfully operated to copper coat an assembly containing a full-size, stainless steel, cold bore, RHIC magnet tubing connected to two types of RHIC bellows, to which two additional pipes made of RHIC tubing were connected. To increase the cathode lifetime, a movable magnet package was developed, and the thickest possible cathode was made, with a rather challenging target to substrate (de facto anode) distance of less than 1.5 cm. Achieving reliable steady state magnetron discharges at such a short cathode to anode gap was rather challenging, when compared to commercial coating equipment, where the target to substrate distance is 10's cm; 6.3 cm is the lowest experimental target to substrate distance found in the literature. Additionally, the magnetron developed during this project provides unique omni-directional uniform coating. The magnetron is mounted on a carriage with spring loaded wheels that successfully crossed bellows and adjusted for variations in vacuum tube diameter, while keeping the magnetron centered. Electrical power and cooling water were fed through a cable bundle. The umbilical cabling system is driven by a motorized spool. Excellent coating adhesion was achieved. Measurements indicated that well-scrubbed copper coating reduced secondary electron yield to 1, i.e., the problem of electron clouds can be eliminated. Room temperature RF resistivity measurement indicated that a 10 μm copper coated stainless steel RHIC tube has a conductivity close to that of pure copper tubing. Excellent coating adhesion was achieved. The device details and experimental results are described.

  7. Plasma Sputtering Robotic Device for In-Situ Thick Coatings of Long, Small Diameter Vacuum Tubes

    Science.gov (United States)

    Hershcovitch, Ady

    2014-10-01

    A novel robotic plasma magnetron mole with a 50 cm long cathode was designed fabricated & operated. Reason for this endeavor is to alleviate the problems of unacceptable ohmic heating of stainless steel vacuum tubes and of electron clouds, due to high secondary electron yield (SEY), in the BNL Relativistic Heavy Ion Collider (RHIC). The magnetron mole was successfully operated to copper coat an assembly containing a full-size, stainless steel, cold bore, RHIC magnet tubing connected to two types of RHIC bellows, to which two additional pipes made of RHIC tubing were connected. To increase cathode lifetime, movable magnet package was developed, and thickest possible cathode was made, with a rather challenging target to substrate (de facto anode) distance of less than 1.5 cm. Achieving reliable steady state magnetron discharges at such a short cathode to anode gap was rather challenging, when compared to commercial coating equipment, where the target to substrate distance is 10's cm; 6.3 cm is the lowest experimental target to substrate distance found in the literature. Additionally, the magnetron developed during this project provides unique omni-directional uniform coating. The magnetron is mounted on a carriage with spring loaded wheels that successfully crossed bellows and adjusted for variations in vacuum tube diameter, while keeping the magnetron centered. Electrical power and cooling water were fed through a cable bundle. The umbilical cabling system is driven by a motorized spool. Excellent coating adhesion was achieved. Measurements indicated that well-scrubbed copper coating reduced SEY to 1, i.e., the problem of electron clouds can be eliminated. Room temperature RF resistivity measurement indicated that 10 μm Cu coated stainless steel RHIC tube has conductivity close to that of pure copper tubing. Excellent coating adhesion was achieved. Device detail and experimental results will be presented. Work supported by Brookhaven Science Associates, LLC under

  8. Plasma sputtering robotic device for in-situ thick coatings of long, small diameter vacuum tubes

    International Nuclear Information System (INIS)

    A novel robotic plasma magnetron mole with a 50 cm long cathode was designed, fabricated, and operated. The reason for this endeavor is to alleviate the problems of unacceptable resistive heating of stainless steel vacuum tubes in the BNL Relativistic Heavy Ion Collider (RHIC). The magnetron mole was successfully operated to copper coat an assembly containing a full-size, stainless steel, cold bore, RHIC magnet tubing connected to two types of RHIC bellows, to which two additional pipes made of RHIC tubing were connected. To increase the cathode lifetime, a movable magnet package was developed, and the thickest possible cathode was made, with a rather challenging target to substrate (de facto anode) distance of less than 1.5 cm. Achieving reliable steady state magnetron discharges at such a short cathode to anode gap was rather challenging, when compared to commercial coating equipment, where the target to substrate distance is 10's cm; 6.3 cm is the lowest experimental target to substrate distance found in the literature. Additionally, the magnetron developed during this project provides unique omni-directional uniform coating. The magnetron is mounted on a carriage with spring loaded wheels that successfully crossed bellows and adjusted for variations in vacuum tube diameter, while keeping the magnetron centered. Electrical power and cooling water were fed through a cable bundle. The umbilical cabling system is driven by a motorized spool. Excellent coating adhesion was achieved. Measurements indicated that well-scrubbed copper coating reduced secondary electron yield to 1, i.e., the problem of electron clouds can be eliminated. Room temperature RF resistivity measurement indicated that a 10 μm copper coated stainless steel RHIC tube has a conductivity close to that of pure copper tubing. Excellent coating adhesion was achieved. The device details and experimental results are described

  9. Hydrogen-free diamond-like carbon films prepared by microwave electron cyclotron resonance plasma-enhanced direct current magnetron sputtering

    International Nuclear Information System (INIS)

    Hydrogen-free diamond-like carbon (DLC) films were prepared by means of microwave electron cyclotron resonance plasma enhanced direct current magnetron sputtering. To study the influence of enhanced plasma on film fabrication and properties, the structures as well as mechanical and electrical properties of these films were studied as a function of applied microwave power. Results showed that higher microwave power could induce higher plasma density and electron temperature. The hardness increased from 3.5 GPa to 13 GPa with a variation of microwave power from 0 W to 1000 W. The resistivity showed a drastic increase from 4.5 x 104 Ωcm at 0 W to 1.3 x 1010 Ωcm at 1000 W. The variation of the intensity ratio I(D)/I(G) and the position of the G-peak of the DLC films with respect to changes in microwave power were also investigated by Raman spectroscopy.

  10. Spatially resolved electron density and electron energy distribution function in Ar magnetron plasmas used for sputter-deposition of ZnO-based thin films

    International Nuclear Information System (INIS)

    Langmuir probe and trace rare gases optical emission spectroscopy were used to analyze the spatial structure of the electron density and electron energy distribution function (EEDF) in a cylindrical Ar magnetron plasma reactor used for sputter-deposition of ZnO-based thin films. While a typical Bessel (zero order) diffusion profile was observed along the radial direction for the number density of charged particles at 21 cm from the ZnO target, a significant rise of these populations with respect to the Bessel function was seen in the center of the reactor at 4 cm from the magnetron surface. As for the EEDF, it was found to transform from a more or less Maxwellian far from the target to a two-temperature Maxwellian with a depletion of high-energy electrons where magnetic field confinement effects become important. No significant change in the behavior of the electron density and EEDF across a wide range of pressures (5–100 mTorr) and self-bias voltages (115–300 V) was observed during magnetron sputtering of Zn, ZnO, and In2O3 targets. This indicates that sputtering of Zn, In, and O atoms do not play a very significant role on the electron particle balance and electron heating dynamics, at least over the range of experimental conditions investigated

  11. Spatially resolved electron density and electron energy distribution function in Ar magnetron plasmas used for sputter-deposition of ZnO-based thin films

    Energy Technology Data Exchange (ETDEWEB)

    Maaloul, L.; Gangwar, R. K.; Morel, S.; Stafford, L., E-mail: luc.stafford@umontreal.ca [Département de Physique, Université de Montréal, Montréal, Québec H3C 3J7 (Canada)

    2015-11-15

    Langmuir probe and trace rare gases optical emission spectroscopy were used to analyze the spatial structure of the electron density and electron energy distribution function (EEDF) in a cylindrical Ar magnetron plasma reactor used for sputter-deposition of ZnO-based thin films. While a typical Bessel (zero order) diffusion profile was observed along the radial direction for the number density of charged particles at 21 cm from the ZnO target, a significant rise of these populations with respect to the Bessel function was seen in the center of the reactor at 4 cm from the magnetron surface. As for the EEDF, it was found to transform from a more or less Maxwellian far from the target to a two-temperature Maxwellian with a depletion of high-energy electrons where magnetic field confinement effects become important. No significant change in the behavior of the electron density and EEDF across a wide range of pressures (5–100 mTorr) and self-bias voltages (115–300 V) was observed during magnetron sputtering of Zn, ZnO, and In{sub 2}O{sub 3} targets. This indicates that sputtering of Zn, In, and O atoms do not play a very significant role on the electron particle balance and electron heating dynamics, at least over the range of experimental conditions investigated.

  12. The comparison of the optical spectra of carbon coatings prepared by magnetron sputtering and microwave plasma enhanced chemical vapor deposition measured by the photothermal deflection spectroscopy (PDS)

    Czech Academy of Sciences Publication Activity Database

    Remeš, Zdeněk; Pham, T.T.; Varga, Marián; Kromka, Alexander; Mao, H.B.

    Bratislava: Slovak Expert Group of Solid State Chemistry and Physics , 2013 - (Koman, M.; Jorík, V.; Kožíšek, Z.). s. 49-49 ISBN 978-80-970896-5-8. [Joint Seminar – Development of materials science in research and education /23./. 09.09.2013-13.09.2013, Kežmarské Žľaby] R&D Projects: GA MŠk LH12186 Institutional support: RVO:68378271 Keywords : photothermal deflection * nanocrystalline diamond * magnetron sputtering * MW CVD Subject RIV: BL - Plasma and Gas Discharge Physics

  13. Application of Analytical Model of the Electric Potential Distribution for Calculation of Charged Particle Dynamics in a Near-Wall Layer and Sputtering of the Plasma Facing Surfaces

    Science.gov (United States)

    Borodkina, I. E.; Komm, M.; Tsvetkov, I. V.

    2015-08-01

    Simple analytical formulas are derived for calculation of the electric field potential distribution in the magnetic pre-layer and the Debye layer near the plasma facing surfaces. It is shown that the calculated potential profiles are in good agreement with the dependences of the potential distribution on the magnetic field inclination obtained by solving the magnetic hydrodynamic (MHD) equations and modeling using the PIC code SPICE2. Dependences of the angular distribution of ions incident on the surface of plasma facing elements on the magnetic field inclination are obtained. Results of calculations demonstrate that the surface areas, on which the magnetic field is incident at sliding angles, are critical from the viewpoint of the increase of sputtering.

  14. Optimization of ZnSe-SiO2 nanostructures deposited by radio-frequency magnetron sputtering: Correlations between plasma species and thin film composition, structural and microstructural properties

    International Nuclear Information System (INIS)

    ZnSe nanoparticle doped SiO2 films have been grown on various substrates at different deposition temperatures, radio-frequency power, Argon pressures and substrate to target distances, by means of reactive magnetron sputtering. A detailed study of the correlations between plasma species and thin film composition, structure and morphology is investigated using X-ray reflectivity and diffraction, Raman and optical emission spectroscopies and Rutherford backscattering technique. It is evidenced that the most sensitive species in the plasma is the Selenium and that the optimal deposition parameters correspond to random stress-free films with a high content of quasi-stoechiometric ZnSe cubic nanocrystallites. A few amount of ZnSe in the hexagonal structure is also evidenced in these films. Using proper deposition parameters, the SiO2/ZnSe proportion in the films and the mean ZnSe particles size around 3 nm are easily monitored

  15. Chemical sputtering

    International Nuclear Information System (INIS)

    In this thesis, the author focuses on chemical sputtering by keV ions, treating two specific examples: the chemical effects occurring when bombarding simple condensed gases and the mechanisms of the ion-assisted etching process. First, however, the mechanism of sputtering of condensed gases in general is discussed. These mechanisms have been investigated using condensed noble gases as target material. The thesis is a compilation of articles published elsewhere. Contents: sputtering of condensed noble gases by keV heavy ions; surface distribution as an observable factor in the energy distribution of sputtered particles; reactive sputtering of simple condensed gases by keV heavy ion bombardment; mass spectra of nozzle-produced small molecular clusters of H2O, NH3, CO and CH4; mass and energy distribution of particles sputter-etched from Si in a XeF2 environment; argon-ion assisted etching of silicon by molecular chlorine; energy distribution of sputtered poly-atomic molecules. (Auth.)

  16. Laser spectroscopy of sputtered atoms

    International Nuclear Information System (INIS)

    The use of laser radiation to study the sputtering process is of relatively recent origin. Much has been learned from this work about the basic physics of the sputtering process itself through measurements of velocity and excited state distributions of sputtered atoms and the effects of adsorbates on substrate sputtering yields. Furthermore, the identification, characterization, and sensitive detection of sputtered atoms by laser spectroscopy has led to the development of in situ diagnostics for impurity fluxes in the plasma edge regions of tokamaks and of ultrasensitive methods (ppB Fe in Si) for surface analysis with ultralow (picocoulomb) ion fluences. The techniques involved in this work, laser fluorescence and multiphoton resonance ionization spectroscopy, will be described and illustrations given of results achieved up to now. 55 refs., 5 figs., 1 tab

  17. Sputter target

    Science.gov (United States)

    Gates, Willard G.; Hale, Gerald J.

    1980-01-01

    The disclosure relates to an improved sputter target for use in the deposition of hard coatings. An exemplary target is given wherein titanium diboride is brazed to a tantalum backing plate using a gold-palladium-nickel braze alloy.

  18. Experimental study of the interaction of a terawatt laser with an underdense plasma: production of a bright and short source of relativistic electrons

    International Nuclear Information System (INIS)

    This dissertation is an experimental study in the context of laser-plasma interaction in the relativistic regime. The coupling of the laser to the plasma causes numerous nonlinear phenomena such as relativistic self-focusing, Raman instabilities, wakefield generation and the breaking of plasma waves. In this self-modulated laser wakefield regime, these effects combine and accelerate background plasma electrons to relativistic velocities. In the first part of the dissertation, nonlinear effects are studied. A new method based on chirped laser pulses allowed us to measure the dynamics of Raman instabilities. The results show that backward Raman scattering occurs at the front of the pulse while forward Raman scattering occurs at the back. In addition, laser self-focusing was studied using shadowgraphy. The results show that the laser power is not the only important parameter for self-focusing: the laser pulse duration must be compared to plasma particle motion times: ωp-1 for electrons and ωpi-1 for ions. In particular, when the pulse duration is too short, relativistic self-focusing does not occur. The second part of the dissertation discusses the production of a relativistic electron source (0 to 70 MeV) using a 10 Hz laser (35 fs, 600 mJ). This bright (1010 electrons) electron source was characterized experimentally: it has a Maxwell-like velocity distribution and is potentially short (<100 fs). The source is now available for applications. Finally, the third part deals with experiments which explore electron acceleration up to GeV energies. Specifically, we discuss the guiding of a Terawatt pulse in a plasma channel and the creation of centimeter long plasmas in rectangular and supersonic gas jets. (author)

  19. Hydrogen incorporation into metal deposits forming from tungsten or stainless steel by sputtering under mixed hydrogen and argon plasma at elevated temperature

    Energy Technology Data Exchange (ETDEWEB)

    Katayama, Kazunari, E-mail: kadzu@nucl.kyushu-u.ac.jp [Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, 6-10-1, Hakozaki, Higashi-ku, Fukuoka 812-8581 (Japan); Ohnishi, Yasuhito; Honda, Takuya [Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, 6-10-1, Hakozaki, Higashi-ku, Fukuoka 812-8581 (Japan); Uehara, Keiichiro [Faculty of Engineering, Kyushu University, 6-10-1, Hakozaki, Higashi-ku, Fukuoka 812-8581 (Japan); Fukada, Satoshi; Nishikawa, Masabumi [Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, 6-10-1, Hakozaki, Higashi-ku, Fukuoka 812-8581 (Japan); Ashikawa, Naoko; Uda, Tatsuhiko [National Institute for Fusion Science, Oroshi, Toki 509-5292 (Japan)

    2013-07-15

    The influence of the deposition conditions on hydrogen incorporation into metal deposits was investigated by exposing tungsten (W) or stainless steel (SS) to mixed hydrogen and argon plasma. The sputtering yield of SS was lower than expected from a sputtering yield of iron and was close to that of Mo. The hydrogen incorporated into the W deposits was released by heating up to 600 °C. On the other hand, the release of hydrogen from the SS deposits continued until 1000 °C. The H/W ratio in the W deposits decreased with decreasing the H/W flux ratio toward the growing surface and increasing substrate temperature. The H/W ratio in the W deposit formed at 500 °C was 0.005. The H/Metal ratio in the SS deposits was varied in the range between 0.03 and 0.3 depending on the target bias but the influences of the H/Metal flux ratio and substrate temperature were not observed.

  20. Absolute densities of Cu, Zn, Sn, and S atoms in magnetron sputtering plasmas employing a Cu2ZnSnS4 target

    Science.gov (United States)

    Nafarizal, Nayan; Sasaki, Koichi

    2016-07-01

    Absolute densities of Cu, Zn, Sn, and S atoms in magnetron sputtering plasmas were measured by ultraviolet absorption spectroscopy and vacuum ultraviolet absorption spectroscopy. A stoichiometric Cu2ZnSnS4 (CZTS) target was used in this work. It was found that, at various Ar pressures, the S density ranged between (2–8) × 1010 cm‑3, the Cu and Sn densities ranged between (0.6–3) × 1010 cm‑3, and the Zn density ranged between (2–3) × 109 cm‑3. The effective depositing flux, which was evaluated from the absolute densities and the sticking probabilities, was comparable with that evaluated from the deposition rate of the CZTS film. However, the composition ratio of Cu, Zn, Sn, and S in the gas phase deviated from the ideal stoichiometry of CZTS. We discussed the possible mechanisms for the difference among the element compositions of the target, the deposited film, and the gas-phase densities.

  1. Sputter-etching characteristics of barium-strontium-titanate and bismuth-strontium-tantalate using a surface-wave high-density plasma reactor

    International Nuclear Information System (INIS)

    The etching of barium-strontium-titanate (BST) and bismuth-strontium-tantalate (SBT) deposited using a pulsed laser deposition technique has been investigated using a nonreactive (argon) surface-wave high-density plasma source. The etch rate of the rf-biased thin films was determined as a function of the self-bias voltage, of the magnetic field intensity and of the gas pressure. It was found that high etch rates with a good selectivity over resist can be achieved without any plasma chemistry, provided the plasma is operated in the very low pressure regime (i.e., below 1 mTorr). For SBT, etch rates as high as 3000 Aa/min with a selectivity of 0.2 over HPR-504 photoresist were obtained with self-bias voltages lower than 150 V. It is also found that even though BST and SBT present similar sputter-etching characteristics, SBT is etched about two times faster than BST as a result of the difference in the atomic density of each material

  2. TiO2 thin and thick films grown on Si/glass by sputtering of titanium targets in an RF inductively coupled plasma

    Science.gov (United States)

    Valencia-Alvarado, R.; de la Piedad-Beneitez, A.; López-Callejas, R.; Mercado-Cabrera, A.; Peña-Eguiluz, R.; Muñoz-Castro, A. E.; Rodríguez-Méndez, B. G.; de la Rosa-Vázquez, J. M.

    2015-03-01

    TiO2 thin and thick films were deposited on silicon/glass substrates using RF inductive plasma in continuous wave. The films thickness, as well as phases control, is achieved with a gradual increase in temperature substrates varying supplied RF power or working gas pressure besides deposition time as well. The deposition conditions were: argon 80%/oxygen 20% carefully calibrated mixture of 2 to 7×10-2 mbar as working gas pressure range. Deposition time 0.5 to 5 hours, 500 or 600 W RF power at 13.56 MHz frequency and 242-345 °C substrates temperature range. The titanium dioxide deposited on the substrates is grown by sputtering of a titanium target negatively polarized at 3-5 kV DC situated 14 mm in front of such substrates. The plasma reactor is a simple Pyrex-like glass cylindrical vessel of 50 cm long and 20 cm in diameter. Using the before describe plasma parameters we obtained films only anatase and both anatase/rutile phases with stoichiometric different. The films were characterized by X-ray photoelectron spectroscopy (XPS), stylus profilometer, X-ray diffraction (XRD), scanning electron microscopy (SEM) and Raman spectroscopy.

  3. Generation of High Brightness Electron Beams via Ionization Induced Injection by Transverse Colliding Lasers in a Beam-Driven Plasma Wakefield Accelerator

    CERN Document Server

    Li, F; Xu, X L; Zhang, C J; Yan, L X; Du, Y C; Huang, W H; Cheng, H B; Tang, C X; Lu, W; Joshi, C; Mori, W B; Gu, Y Q

    2013-01-01

    The production of ultra-bright electron bunches using ionization injection triggered by two transversely colliding laser pulses inside a beam-driven plasma wake is examined via three-dimensional (3D) particle-in-cell (PIC) simulations. The relatively low intensity lasers are polarized along the wake axis and overlap with the wake for a very short time. The result is that the residual momentum of the ionized electrons in the transverse plane of the wake is much reduced and the injection is localized along the propagation axis of the wake. This minimizes both the initial 'thermal' emittance and the emittance growth due to transverse phase mixing. 3D PIC simulations show that ultra-short (around 8 fs) high-current (0.4 kA) electron bunches with a normalized emittance of 8.5 and 6 nm in the two planes respectively and a brightness greater than 1.7*10e19 A rad-2 m-2 can be obtained for realistic parameters.

  4. On the pressure effect in energetic deposition of Cu thin films by modulated pulsed power magnetron sputtering: A global plasma model and experiments

    International Nuclear Information System (INIS)

    The modulated pulsed power magnetron sputtering (MPPMS) discharge processes are numerically modeled and experimentally investigated, in order to explore the effect of the pressure on MPPMS discharges as well as on the microstructure of the deposited thin films. A global plasma model has been developed based on a volume-averaged global description of the ionization region, considering the loss of electrons by cross-B diffusion. The temporal variations of internal plasma parameters at different pressures from 0.1 to 0.7 Pa are obtained by fitting the model to duplicate the experimental discharge data, and Cu thin films are deposited by MPPMS at the corresponding pressures. The surface morphology, grain size and orientation, and microstructure of the deposited thin films are investigated by scanning electron microscopy, transmission electron microscopy, and x-ray diffraction. By increasing the pressure from 0.1 to 0.7 Pa, both the ion bombardment energy and substrate temperature which are estimated by the modeled plasma parameters decrease, corresponding to the observed transition of the deposited thin films from a void free structure with a wide distribution of grain size (zone T) into an underdense structure with a fine fiber texture (zone 1) in the extended structure zone diagram (SZD). The microstructure and texture transition of Cu thin films are well-explained by the extended SZD, suggesting that the primary plasma processes are properly incorporated in the model. The results contribute to the understanding of the characteristics of MPPMS discharges, as well as its correlation with the microstructure and texture of deposited Cu thin films

  5. On the pressure effect in energetic deposition of Cu thin films by modulated pulsed power magnetron sputtering: A global plasma model and experiments

    Science.gov (United States)

    Zheng, B. C.; Meng, D.; Che, H. L.; Lei, M. K.

    2015-05-01

    The modulated pulsed power magnetron sputtering (MPPMS) discharge processes are numerically modeled and experimentally investigated, in order to explore the effect of the pressure on MPPMS discharges as well as on the microstructure of the deposited thin films. A global plasma model has been developed based on a volume-averaged global description of the ionization region, considering the loss of electrons by cross-B diffusion. The temporal variations of internal plasma parameters at different pressures from 0.1 to 0.7 Pa are obtained by fitting the model to duplicate the experimental discharge data, and Cu thin films are deposited by MPPMS at the corresponding pressures. The surface morphology, grain size and orientation, and microstructure of the deposited thin films are investigated by scanning electron microscopy, transmission electron microscopy, and x-ray diffraction. By increasing the pressure from 0.1 to 0.7 Pa, both the ion bombardment energy and substrate temperature which are estimated by the modeled plasma parameters decrease, corresponding to the observed transition of the deposited thin films from a void free structure with a wide distribution of grain size (zone T) into an underdense structure with a fine fiber texture (zone 1) in the extended structure zone diagram (SZD). The microstructure and texture transition of Cu thin films are well-explained by the extended SZD, suggesting that the primary plasma processes are properly incorporated in the model. The results contribute to the understanding of the characteristics of MPPMS discharges, as well as its correlation with the microstructure and texture of deposited Cu thin films.

  6. Adhesion improvement of TiN film on tool steel by a hybrid process of unbalanced magnetron sputtering and plasma-based ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Ono, T. [University of Hyogo, Graduate School of Engineering, 2167 Shosha, Himeji, Hyogo 671-2201 (Japan); Uemura, M. [University of Hyogo, Graduate School of Engineering, 2167 Shosha, Himeji, Hyogo 671-2201 (Japan); Yatsuzuka, M. [University of Hyogo, Graduate School of Engineering, 2167 Shosha, Himeji, Hyogo 671-2201 (Japan)]. E-mail: yatuzuka@eng.u-hyogo.ac.jp

    2007-04-15

    An interfacial mixing layer and a titanium (Ti) layer between the titanium-nitride (TiN) film and the substrate material was produced to improve the adhesion of TiN film on tool substrates by a hybrid process of unbalanced magnetron sputtering (UBM) and plasma-based ion implantation (PBII). Before TiN deposition by UBM, the negative high-voltage pulse and DC-bias were applied to the substrate immersed in the Ti plasma, resulting in implantation as well as deposition of Ti ions to the substrate. As a result, a Ti layer and a graded mixing layer of Ti and substrate materials was produced to work as a buffer interface between substrate and TiN film. The adhesion strength of TiN film with the interfacial treatment on tool steel substrates was evaluated by scratch and indentation tests, showing the considerable improvement of adhesion by the formation of the Ti and the interfacial mixing layers. The suitable ion implantation energy for the improvement of adhesion strength was found.

  7. Adhesion improvement of TiN film on tool steel by a hybrid process of unbalanced magnetron sputtering and plasma-based ion implantation

    International Nuclear Information System (INIS)

    An interfacial mixing layer and a titanium (Ti) layer between the titanium-nitride (TiN) film and the substrate material was produced to improve the adhesion of TiN film on tool substrates by a hybrid process of unbalanced magnetron sputtering (UBM) and plasma-based ion implantation (PBII). Before TiN deposition by UBM, the negative high-voltage pulse and DC-bias were applied to the substrate immersed in the Ti plasma, resulting in implantation as well as deposition of Ti ions to the substrate. As a result, a Ti layer and a graded mixing layer of Ti and substrate materials was produced to work as a buffer interface between substrate and TiN film. The adhesion strength of TiN film with the interfacial treatment on tool steel substrates was evaluated by scratch and indentation tests, showing the considerable improvement of adhesion by the formation of the Ti and the interfacial mixing layers. The suitable ion implantation energy for the improvement of adhesion strength was found

  8. Modeling and analysis of surface roughness effects on sputtering, reflection, and sputtered particle transport

    International Nuclear Information System (INIS)

    The microstructure of the redeposited surface in tokamaks may affect sputtering and reflection properties and subsequent particle transport. This subject has been studied numerically using coupled models/codes for near-surface plasma particle kinetic transport (WBC code) and rough surface sputtering (fractal-TRIM). The coupled codes provide an overall Monte Carlo calculation of the sputtering cascade resulting from an initial flux of hydrogen ions. Beryllium, carbon, and tungsten surfaces are analyzed for typical high recycling, oblique magnetic field, divertor conditions. Significant variations in computed sputtering rates are found with surface roughness. Beryllium exhibits high D-T and self-sputtering coefficients for the plasma regime studied (Te = 30-75 eV). Carbon and tungsten sputtering is significantly lower. 9 refs., 6 figs., 1 tab

  9. Flexible Solar Cells Using Doped Crystalline Si Film Prepared by Self-Biased Sputtering Solid Doping Source in SiCl4/H2 Microwave Plasma.

    Science.gov (United States)

    Hsieh, Ping-Yen; Lee, Chi-Young; Tai, Nyan-Hwa

    2016-02-24

    We developed an innovative approach of self-biased sputtering solid doping source process to synthesize doped crystalline Si film on flexible polyimide (PI) substrate via microwave-plasma-enhanced chemical vapor deposition (MWPECVD) using SiCl4/H2 mixture. In this process, P dopants or B dopants were introduced by sputtering the solid doping target through charged-ion bombardment in situ during high-density microwave plasma deposition. A strong correlation between the number of solid doping targets and the characteristics of doped Si films was investigated in detail. The results show that both P- and B-doped crystalline Si films possessed a dense columnar structure, and the crystallinity of these structures decreased with increasing the number of solid doping targets. The films also exhibited a high growth rate (>4.0 nm/s). Under optimal conditions, the maximum conductivity and corresponding carrier concentration were, respectively, 9.48 S/cm and 1.2 × 10(20) cm(-3) for P-doped Si film and 7.83 S/cm and 1.5 × 10(20) cm(-3) for B-doped Si film. Such high values indicate that the incorporation of dopant with high doping efficiency (around 40%) into the Si films was achieved regardless of solid doping sources used. Furthermore, a flexible crystalline Si film solar cell with substrate configuration was fabricated by using the structure of PI/Mo film/n-type Si film/i-type Si film/p-type Si film/ITO film/Al grid film. The best solar cell performance was obtained with an open-circuit voltage of 0.54 V, short-circuit current density of 19.18 mA/cm(2), fill factor of 0.65, and high energy conversion of 6.75%. According to the results of bending tests, the critical radius of curvature (RC) was 12.4 mm, and the loss of efficiency was less than1% after the cyclic bending test for 100 cycles at RC, indicating superior flexibility and bending durability. These results represent important steps toward a low-cost approach to high-performance flexible crystalline Si film

  10. Stoichiometric silicon oxynitride thin films reactively sputtered in Ar/N2O plasmas by HiPIMS

    Science.gov (United States)

    Hänninen, Tuomas; Schmidt, Susann; Wissting, Jonas; Jensen, Jens; Hultman, Lars; Högberg, Hans

    2016-04-01

    Silicon oxynitride (SiO x N y , x=0.2-1.3, y=0.2 -0.7) thin films were synthesized by reactive high power impulse magnetron sputtering from a pure silicon target in Ar/N2O atmospheres. It was found that the composition of the material can be controlled by the reactive gas flow and the average target power. X-ray photoelectron spectroscopy (XPS) shows that high average powers result in more silicon-rich films, while lower target powers yield silicon-oxide-like material due to more pronounced target poisoning. The amount of nitrogen in the films can be controlled by the percentage of nitrous oxide in the working gas. The nitrogen content remains at a constant level while the target is operated in the transition region between metallic and poisoned target surface conditions. The extent of target poisoning is gauged by the changes in peak target current under the different deposition conditions. XPS also shows that varying concentrations and ratios of oxygen and nitrogen in the films result in film chemical bonding structures ranging from silicon-rich to stoichiometric silicon oxynitrides having no observable Si-Si bond contributions. Spectroscopic ellipsometry shows that the film optical properties depend on the amount and ratio of oxygen and nitrogen in the compound, with film refractive indices measured at 633 nm ranging between those of SiO2 and Si3N4.

  11. Growth of preferentially c-axis oriented hydroxyapatite thin films on Si(1 0 0) substrate by electron-cyclotron-resonance plasma sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Akazawa, Housei, E-mail: akazawa.housei@lab.ntt.co.jp; Ueno, Yuko

    2013-07-01

    We deposited hydroxyapatite (HAp) thin films on Si(1 0 0) substrates by means of electron cyclotron resonance (ECR) plasma sputtering from a HAp target and characterized their structural properties by X-ray diffraction (XRD) and Fourier transform infrared absorption spectroscopy. Deposition in the presence of an H{sub 2}O vapor at room temperature incorporated H{sub 2}O and OH species in the deposited films. Post-annealing in an O{sub 2} ambient self-organized OH{sup −} and PO{sub 4}{sup 3−} functional groups in HAp crystals. The XRD patterns revealed randomly orientation when the annealing temperature ranged between 700 and 900 °C. In contrast, preferentially c-axis-oriented HAp crystals nucleated after prolonged annealing at 550–600 °C. The possible scenario for the preferred orientation is that C-plane terminated HAp crystallites were initially created in the near-surface region, and the following crystallization proceeded exclusively on the seed surface. After post annealing in a vacuum or in an Ar gas ambient at 900 °C, films were reduced into tricalcium phosphate, increasing photoabsorption in the infrared range.

  12. Growth of preferentially c-axis oriented hydroxyapatite thin films on Si(1 0 0) substrate by electron-cyclotron-resonance plasma sputtering

    International Nuclear Information System (INIS)

    We deposited hydroxyapatite (HAp) thin films on Si(1 0 0) substrates by means of electron cyclotron resonance (ECR) plasma sputtering from a HAp target and characterized their structural properties by X-ray diffraction (XRD) and Fourier transform infrared absorption spectroscopy. Deposition in the presence of an H2O vapor at room temperature incorporated H2O and OH species in the deposited films. Post-annealing in an O2 ambient self-organized OH− and PO43− functional groups in HAp crystals. The XRD patterns revealed randomly orientation when the annealing temperature ranged between 700 and 900 °C. In contrast, preferentially c-axis-oriented HAp crystals nucleated after prolonged annealing at 550–600 °C. The possible scenario for the preferred orientation is that C-plane terminated HAp crystallites were initially created in the near-surface region, and the following crystallization proceeded exclusively on the seed surface. After post annealing in a vacuum or in an Ar gas ambient at 900 °C, films were reduced into tricalcium phosphate, increasing photoabsorption in the infrared range.

  13. Effects of plasma on the growth conditions of Y1Ba2Cu3O7-δ thin films in dc sputtering

    International Nuclear Information System (INIS)

    Y1Ba2Cu3O7-δ (YBCO) films have been grown using hollow cathode dc sputtering with various conditions. The effects of plasma conditions on the film qualities and the deposition rates have been studied in detail. To prevent the ion flux from reducing the film quality, it should be less than ∼2 x 10-2 mA cm-2 with a deposition rate of 1-2 nm min-1. When the distance from the substrate to the target is very large or the discharge power is very small, the ion flux is sufficiently small. However, in the latter case the films are quite degraded, while there are no degradations for the films of the former case. Our experiments have revealed that this is due to the large differences in the densities of oxygen radicals for the two cases. The insufficient oxidation causing the degradations corresponds with the small Cu2p3/2 satellite peaks of x-ray photoemission spectroscopy and the losses of Cu content. The deposition rates are much enhanced by decreased gas pressures, increased flow rates of gas and discharge power

  14. Influence of Microwave Power on the Properties of Hydrogenated Diamond-Like Carbon Films Prepared by ECR Plasma Enhanced DC Magnetron Sputtering

    International Nuclear Information System (INIS)

    Electron cyclotron resonance (ECR) plasma was applied to enhance the direct current magnetron sputtering to prepare hydrogenated diamond-like carbon (H-DLC) films. For different microwave powers, both argon and hydrogen gas are introduced separately as the ECR working gas to investigate the influence of microwave power on the microstructure and electrical property of the H-DLC films deposited on P-type silicon substrates. A series of characterization methods including the Raman spectrum and atomic force microscopy are used. Results show that, within a certain range, the increase in microwave power affects the properties of the thin films, namely the sp3 ratio, the hardness, the nanoparticle size and the resistivity all increase while the roughness decreases with the increase in microwave power. The maximum of resistivity amounts to 1.1 x 109 Ω · cm. At the same time it is found that the influence of microwave power on the properties of H-DLC films is more pronounced when argon gas is applied as the ECR working gas, compared to hydrogen gas.

  15. Influence of Ar/Kr ratio and pulse parameters in a Cr-N high power pulse magnetron sputtering process on plasma and coating properties

    International Nuclear Information System (INIS)

    Krypton is sometimes used in physical vapor deposition processes due to its greater atomic mass and size compared to argon, which leads to a lower gas incorporation and may have beneficial effects on kinetics of the coating growth. In this paper, the authors investigate the plasma composition and properties of deposited high power pulse magnetron sputtering Cr-N coatings for discharges with various Ar/Kr ratios and for various pulse lengths of 40 μs, 80 μs, and 200 μs, keeping the average discharge power constant. The results show that an addition of Kr influences the discharge process by altering the ignition and peak values of the discharge current. This influences the metal ion generation and growth conditions on the substrate by reducing the nucleation site densities, leading to a predominantly columnar grow. However, the deposition rate is highest for an Ar/Kr ratio of 120/80. The integral of the metal ion and atom emission exhibits the same trend, having a maximum for Ar/Kr ratio of 120/80. By decreasing the pulse length, the deposition rate of coatings decreases, while the hardness increases

  16. In situ plasma sputtering synthesis of ZnO nanorods-Ag nanoparticles hybrids and their application in non-enzymatic hydrogen peroxide sensing

    Science.gov (United States)

    Zhang, Dan; Zhang, Yuxia; Yang, Chi; Ge, Cunwang; Wang, Yuanhong; Wang, Hao; Liu, Hongying

    2015-08-01

    In this paper, ZnO nanorods-Ag nanoparticles hybrids were first synthesized via a facile, rapid, and in situ plasma sputtering method without using any silver precursor. The obtained materials were then characterized by scanning electron microscopy, high-resolution transmission electron microscopy, energy-dispersive x-ray spectroscopy, and cyclic voltammetry. Based on the electrochemical catalytic properties of the obtained nanohybrids, a non-enzymatic hydrogen peroxide biosensor was constructed by immobilizing the obtained ZnO nanorods-Ag nanoparticles hybrids on the surface of a glassy carbon electrode. Under optimal conditions, the resulting biosensor displayed a good response for H2O2 with a linear range of 0.2 to 12.8 mM, and a detection limit of 7.8 μM at a signal-to-noise ratio of 3. In addition, it exhibited excellent anti-interference ability and fast response. The current work provides a feasible platform to fabricate a variety of non-enzymatic biosensors.

  17. Numerical Study of Hall Thruster Plume and Sputtering Erosion

    Directory of Open Access Journals (Sweden)

    Li Yan

    2012-01-01

    Full Text Available Potential sputtering erosion caused by the interactions between spacecraft and plasma plume of Hall thrusters is a concern for electric propulsion. In this study, calculation model of Hall thruster’s plume and sputtering erosion is presented. The model is based on three dimensional hybrid particle-in-cell and direct simulation Monte Carlo method (PIC/DSMC method which is integrated with plume-wall sputtering yield model. For low-energy heavy-ion sputtering in Hall thruster plume, the Matsunami formula for the normal incidence sputtering yield and the Yamamura angular dependence of sputtering yield are used. The validation of the simulation model is realized through comparing plume results with the measured data. Then, SPT-70’s sputtering erosion on satellite surfaces is assessed and effect of mass flow rate on sputtering erosion is analyzed.

  18. Electrochromic performance of NiV{sub x}O{sub y} thin films deposited onto flexible PET/ITO substrates by reactive plasma sputtering for flexible electrochromic devices

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Y.-S., E-mail: yslin@fcu.edu.t [Department of Chemical Engineering, Feng Chia University, No. 100, Wenhwa Rd., Seatwen, Taichung 407, Taiwan (China); Chen, P.-W.; Lin, D.-J. [Department of Chemical Engineering, Feng Chia University, No. 100, Wenhwa Rd., Seatwen, Taichung 407, Taiwan (China)

    2010-10-01

    An investigation was conducted on the electrochromic properties of plasma sputtered-nickel-vanadium oxide thin films on 40 {Omega}/{open_square} flexible polyethylene terephthalate/indium tin oxide substrates. Metallic Ni{sub 0.93}V{sub 0.07} target, sputtered by radio frequency power with argon gases and reacted with oxygen gases at room temperature (23 {sup o}C), was proven to provide extraordinary electrochromic performance. Cyclic voltammetry switching measurements found that only low driving voltages from - 1 V to 1 V were needed to provide reversible Li{sup +} ion intercalation and deintercalation. The light modulation with up to 52% of transmittance variation, optical density change of 0.446 and color efficiency of 63.8 cm{sup 2}/C at a wavelength of 550 nm was obtained for 200 cycles of Li{sup +} intercalation and deintercalation in a 1 M LiClO{sub 4}-propylene carbonate electrolyte.

  19. Influence of cross-field drifts and chemical sputtering on simulations of divertor particle and heat loads in ohmic and L-mode plasmas in DIII-D, AUG, and JET using UEDGE

    Energy Technology Data Exchange (ETDEWEB)

    Groth, M., E-mail: mathias.groth@tkk.fi [Aalto University, Association EURATOM-Tekes, Otakaari 4, 02015 Espoo (Finland); Lawrence Livermore National Laboratory, 7000 East Avenue, CA 94550 (United States); Porter, G.D.; Rensink, M.E.; Rognlien, T.D. [Lawrence Livermore National Laboratory, 7000 East Avenue, CA 94550 (United States); Wiesen, S. [Forschungszentrum Juelich GmbH, EURATOM-Assoziation, TEC, Juelich (Germany); Wischmeier, M.; Eich, T.; Herrmann, A. [Max-Planck Institut fuer Plasmaphysik, EURATOM-Assoziation, Garching (Germany); Jachmich, S. [Association ' Euratom-Belgian state' , Ecole Royale Militaire, Brussels (Belgium); Lasnier, C.J. [Lawrence Livermore National Laboratory, 7000 East Avenue, CA 94550 (United States); Mueller, H.W. [Max-Planck Institut fuer Plasmaphysik, EURATOM-Assoziation, Garching (Germany); Watkins, J.G. [Sandia National Laboratories, Albuquerque, NM (United States); Beurskens, M.N.A. [EURATOM/CCFE - Fusion Association, Culham Science Centre, Abingdon (United Kingdom); Bray, B.D. [General Atomics, San Diego, CA (United States); Brezinsek, S. [Forschungszentrum Juelich GmbH, EURATOM-Assoziation, TEC, Juelich (Germany); Brooks, N.H. [General Atomics, San Diego, CA (United States); Fenstermacher, M.E. [Lawrence Livermore National Laboratory, 7000 East Avenue, CA 94550 (United States); Fuchs, C. [Max-Planck Institut fuer Plasmaphysik, EURATOM-Assoziation, Garching (Germany); Huber, A. [Forschungszentrum Juelich GmbH, EURATOM-Assoziation, TEC, Juelich (Germany); Kallenbach, A. [Max-Planck Institut fuer Plasmaphysik, EURATOM-Assoziation, Garching (Germany)

    2011-08-01

    Measurements and simulations with the UEDGE code of radiated power, and ion saturation currents and power loads to the target plates have been compared for density scans in ohmic and low confinement mode plasmas in DIII-D, ASDEX Upgrade, and JET. Simulations including cross-field drifts and assuming elevated chemical sputtering yields of 3%-4% move the numerical solutions closer to many of the measurements compared to omitting the drifts and using the published Davis-Haasz yields. Adopting these assumptions the simulations reproduce the measured currents and powers, and their functional dependence on upstream density to within a factor of 2, with the exception of the ion currents to the low field side target in ASDEX Upgrade and the high field side target in JET. The applicability of using enhanced sputtering yields is discussed by comparing measured and simulated emission from low charge state carbon in the divertor regions.

  20. Friction and Wear Properties of Selected Solid Lubricating Films. Part 3; Magnetron-Sputtered and Plasma-Assisted, Chemical-Vapor-Deposited Diamondlike Carbon Films

    Science.gov (United States)

    Miyoshi, Kazuhisa; Iwaki, Masanori; Gotoh, Kenichi; Obara, Shingo; Imagawa, Kichiro

    2000-01-01

    To evaluate commercially developed dry solid film lubricants for aerospace bearing applications, an investigation was conducted to examine the friction and wear behavior of magnetron-sputtered diamondlike carbon (MS DLC) and plasma-assisted, chemical-vapor-deposited diamondlike carbon (PACVD DLC) films in sliding contact with 6-mm-diameter American Iron and Steel Institute (AISI) 440C stainless steel balls. Unidirectional sliding friction experiments were conducted with a load of 5.9 N (600 g), a mean Hertzian contact pressure of 0.79 GPa (maximum Hertzian contact pressure of L-2 GPa), and a sliding velocity of 0.2 m/s. The experiments were conducted at room temperature in three environments: ultrahigh vacuum (vacuum pressure, 7x10(exp -7) Pa), humid air (relative humidity, approx.20 percent), and dry nitrogen (relative humidity, films were characterized by scanning electron microscopy, energy-dispersive x-ray spectroscopy, and surface profilometry. Marked differences in the friction and wear of the DLC films investigated herein resulted from the environmental conditions. The main criteria for judging the performance of the DLC films were coefficient of friction and wear rate, which had to be less than 0.3 and on the order of 10(exp -6) cu mm/N-m or less, respectively. MS DLC films and PACVD DLC films met the criteria in humid air and dry nitrogen but failed in ultrahigh vacuum, where the coefficients of friction were greater than the criterion, 0.3. In sliding contact with 440C stainless steel balls in all three environments the PACVD DLC films exhibited better tribological performance (i.e., lower friction and wear) than the MS DLC films. All sliding involved adhesive transfer of wear materials: transfer of DLC wear debris to the counterpart 440C stainless steel and transfer of 440C stainless steel wear debris to the counterpart DLC film.

  1. Physical sputtering code for fusion applications

    International Nuclear Information System (INIS)

    A computer code, DSPUT, has been developed to compute the physical sputtering yields for various plasma particles incident on candidate fusion-reactor first-wall materials. The code, which incorporates the energy and angular-dependence of the sputtering yield, treats both high- and low-Z incident particles bombarding high- and low-Z wall materials. The physical sputtering yield is expressed in terms of the atomic and mass numbers of the incident and target atoms, the surface binding energy of the wall materials, and the incident angle and energy of the particle. An auxiliary code has been written to provide sputtering yields for a Maxwellian-averaged incident particle flux. The code DSPUT has been used as part of a Monte Carlo code for analyzing plasma-wall interactions

  2. Characterization and modeling of multi-dipolar microwave plasmas: application to multi-dipolar plasma assisted sputtering; Caracterisation et modelisation des plasmas micro-onde multi-dipolaires: application a la pulverisation assistee par plasma multi-dipolaire

    Energy Technology Data Exchange (ETDEWEB)

    Tran, T.V

    2006-12-15

    The scaling up of plasma processes in the low pressure range remains a question to be solved for their rise at the industrial level. One solution is the uniform distribution of elementary plasma sources where the plasma is produced via electron cyclotron resonance (ECR) coupling. These elementary plasma sources are made up of a cylindrical permanent magnet (magnetic dipole) set at the end of a coaxial microwave line. Although of simple concept, the optimisation of these dipolar plasma sources is in fact a complex problem. It requires the knowledge, on one hand, of the configurations of static magnetic fields and microwave electric fields, and, on the other hand, of the mechanisms of plasma production in the region of high intensity magnetic field (ECR condition), and of plasma diffusion. Therefore, the experimental characterisation of the operating ranges and plasma parameters has been performed by Langmuir probes and optical emission spectroscopy on different configurations of dipolar sources. At the same time, in a first analytical approach, calculations have been made on simple magnetic field configurations, motion and trajectory of electrons in these magnetic fields, and the acceleration of electrons by ECR coupling. Then, the results have been used for the validation of the numerical modelling of the electron trajectories by using a hybrid PIC (particle-in-cell) / MC (Monte Carlo) method. The experimental study has evidenced large operating domains, between 15 and 200 W of microwave power, and from 0.5 to 15 mtorr argon pressure. The analysis of plasma parameters has shown that the region of ECR coupling is localised near the equatorial plane of the magnet and dependent on magnet geometry. These characterizations, applied to a cylindrical reactor using 48 sources, have shown that densities between 10{sup 11} and 10{sup 12} cm{sup -3} could be achieved in the central part of the volume at a few mtorr argon pressures. The modelling of electron trajectories near

  3. Magnetron sputtering of transparent conductive zinc oxide: relation between the sputtering parameters and the electronic properties

    International Nuclear Information System (INIS)

    Magnetron sputtering of transparent conductive oxides (zinc oxide, indium tin oxide, tin oxide) is a promising technique which allows the deposition of films at low temperatures with good optical and electronic properties. A special advantage is the scalability to large areas. The principles underlying magnetron sputtering are reviewed in this paper. The growth process during magnetron sputtering is characterized by the bombardment of the growing film with species from the sputtering target and from the plasma. In addition to sputtered atoms with energies in the eV range, ions from the plasma (mostly argon) and neutral atoms (also argon) reflected at the target hit the growing film. Depending on the energy of these species and on the ion-to-neutral ratio the properties of the films vary. High energies (≥100 eV), which occur mainly at low sputtering pressures lead to damage of the growing film, connected with mechanical stress, small crystallites and bad electrical parameters. Ion assisted growth with low ion energies (below about 50 eV) is advantageous as is a high ion-to-neutral ratio. A compilation of resistivities of magnetron sputtered zinc oxide films yields a limiting resistivity of 2x10-4 Ω cm for polycrystalline films. Based on the correlation between plasma parameters and film properties new search fields are anticipated. (author)

  4. The comparison of the optical spectra of carbon coatings prepared by magnetron sputtering and microwave plasma enhanced chemical vapor deposition measured by the photothermal deflection spectroscopy

    Czech Academy of Sciences Publication Activity Database

    Remeš, Zdeněk; Pham, T.T.; Varga, Marián; Kromka, Alexander; Mao, H.B.

    2015-01-01

    Roč. 7, č. 4 (2015), s. 321-324. ISSN 2164-6627 R&D Projects: GA MŠk LH12186 Institutional support: RVO:68378271 Keywords : nanocrystalline diamond * amorphous carbon * magnetron sputtering * CVD * optical spectroscopy Subject RIV: BM - Solid Matter Physics ; Magnetism

  5. Heavy particle transport in sputtering systems

    Science.gov (United States)

    Trieschmann, Jan

    2015-09-01

    This contribution aims to discuss the theoretical background of heavy particle transport in plasma sputtering systems such as direct current magnetron sputtering (dcMS), high power impulse magnetron sputtering (HiPIMS), or multi frequency capacitively coupled plasmas (MFCCP). Due to inherently low process pressures below one Pa only kinetic simulation models are suitable. In this work a model appropriate for the description of the transport of film forming particles sputtered of a target material has been devised within the frame of the OpenFOAM software (specifically dsmcFoam). The three dimensional model comprises of ejection of sputtered particles into the reactor chamber, their collisional transport through the volume, as well as deposition of the latter onto the surrounding surfaces (i.e. substrates, walls). An angular dependent Thompson energy distribution fitted to results from Monte-Carlo simulations is assumed initially. Binary collisions are treated via the M1 collision model, a modified variable hard sphere (VHS) model. The dynamics of sputtered and background gas species can be resolved self-consistently following the direct simulation Monte-Carlo (DSMC) approach or, whenever possible, simplified based on the test particle method (TPM) with the assumption of a constant, non-stationary background at a given temperature. At the example of an MFCCP research reactor the transport of sputtered aluminum is specifically discussed. For the peculiar configuration and under typical process conditions with argon as process gas the transport of aluminum sputtered of a circular target is shown to be governed by a one dimensional interaction of the imposed and backscattered particle fluxes. The results are analyzed and discussed on the basis of the obtained velocity distribution functions (VDF). This work is supported by the German Research Foundation (DFG) in the frame of the Collaborative Research Centre TRR 87.

  6. Development of a high brightness ion source

    International Nuclear Information System (INIS)

    The brightness and emittance of an ion beam can depend on the ion temperature, aberrations and scattering, as well as other factors. However, it is the ion temperature which determines the irreducible minimum value of the emittance and hence brightness, as the other components can be eliminated by careful design. An ion source design is presented which has attained this minimum value for the emittance; the dependence of the ion temperature on the plasma source parameters is discussed

  7. Correlation between optical characterization of the plasma in reactive magnetron sputtering deposition of Zr-N on SS 316L and surface and mechanical properties of the deposited films

    International Nuclear Information System (INIS)

    Optical and surface spectroscopies as well as nanoindentation techniques have been used to study ZrN coatings on 316L stainless steel obtained by DC-reactive magnetron sputtering. The deposit process was carried out using initial and working pressures of 10-6 Torr and 10-3 Torr, respectively. The experimental set-up for optical spectra acquisition was designed for the study in situ of the plasma in the deposition chamber. Auger spectroscopy, SEM and X-ray diffraction were used to characterize the coatings. Nanoindentation tests were carried out to measure the mechanical properties of the coating. Plasma characterization revealed the presence of CN molecules and Cr ions in the plasma. Surface spectroscopy results showed that ZrN, Zr3N4 and ZrC coexist in the coating. These results allowed the understanding of the mechanical behavior of the coatings, demonstrating the importance of the plasma characterization as a tool for tailoring the properties of hard coatings

  8. Correlation between optical characterization of the plasma in reactive magnetron sputtering deposition of Zr-N on SS 316L and surface and mechanical properties of the deposited films

    Energy Technology Data Exchange (ETDEWEB)

    Fragiel, A.; Machorro, R. [Centro de Ciencias de la Materia Condensada, Universidad Nacional Autonoma de Mexico, Apdo. Postal 2681, C.P. 22800, Ensenada, Baja California (Mexico); Munoz-Saldana, J. [Centro de Investigacion y de Estudios Avanzados del IPN, Unidad Queretaro, Libr. Norponiente No. 2000, Fracc. Real de Juriquilla, 76230 Queretaro, Qro. (Mexico); Salinas, J. [Instituto Nacional de Astrofisica Optica y Electronica, Apdo Postal 51 y 216, 72000 Puebla, Pue. (Mexico); Cota, L. [Centro de Ciencias de la Materia Condensada, Universidad Nacional Autonoma de Mexico, Apdo. Postal 2681, C.P. 22800, Ensenada, Baja California (Mexico)], E-mail: leonel@ccmc.unam.mx

    2008-05-30

    Optical and surface spectroscopies as well as nanoindentation techniques have been used to study ZrN coatings on 316L stainless steel obtained by DC-reactive magnetron sputtering. The deposit process was carried out using initial and working pressures of 10{sup -6} Torr and 10{sup -3} Torr, respectively. The experimental set-up for optical spectra acquisition was designed for the study in situ of the plasma in the deposition chamber. Auger spectroscopy, SEM and X-ray diffraction were used to characterize the coatings. Nanoindentation tests were carried out to measure the mechanical properties of the coating. Plasma characterization revealed the presence of CN molecules and Cr ions in the plasma. Surface spectroscopy results showed that ZrN, Zr{sub 3}N{sub 4} and ZrC coexist in the coating. These results allowed the understanding of the mechanical behavior of the coatings, demonstrating the importance of the plasma characterization as a tool for tailoring the properties of hard coatings.

  9. Solar system sputtering

    Science.gov (United States)

    Tombrello, T. A.

    1982-01-01

    The sites and materials involved in solar system sputtering of planetary surfaces are reviewed, together with existing models for the processes of sputtering. Attention is given to the interaction of the solar wind with planetary atmospheres in terms of the role played by the solar wind in affecting the He-4 budget in the Venus atmosphere, and the erosion and differentiation of the Mars atmosphere by solar wind sputtering. The study is extended to the production of isotopic fractionation and anomalies in interplanetary grains by irradiation, and to erosion effects on planetary satellites with frozen volatile surfaces, such as with Io, Europa, and Ganymede. Further measurements are recommended of the molecular form of the ejected material, the yields and energy spectra of the sputtered products, the iosotopic fractionation sputtering causes, and the possibility of electronic sputtering enhancement with materials such as silicates.

  10. Reactive sputter deposition

    CERN Document Server

    Mahieu, Stijn

    2008-01-01

    In this valuable work, all aspects of the reactive magnetron sputtering process, from the discharge up to the resulting thin film growth, are described in detail, allowing the reader to understand the complete process. Hence, this book gives necessary information for those who want to start with reactive magnetron sputtering, understand and investigate the technique, control their sputtering process and tune their existing process, obtaining the desired thin films.

  11. Alamethicin permeabilizes the plasma membrane and mitochondria but not the tonoplast in tobacco (Nicotiana tabacum L. cv Bright Yellow) suspension cells

    DEFF Research Database (Denmark)

    Matic, S.; Geisler, D.A.; Møller, I.M.;

    2005-01-01

    The ion channel-forming peptide AlaM (alamethicin) is known to permeabilize isolated mitochondria as well as animal cells. When intact tobacco (Nicotiana tabacum L.) Bright Yellow-2 cells were treated with AlaM, the cells became permeable for low-molecular-mass molecules as shown by induced leakage...... cofactor concentrations. Possible uses and limitations of this method for plant cell research are discussed....... of NAD(P)(+). After the addition of cofactors and substrates, activities of cytosolic as well as mitochondrial respiratory enzymes could be directly determined inside the permeabilized cells. However, at an AlaM concentration at which the cytoplasmic enzymes were maximally accessible, the vacuole...

  12. Deposition of SiOx thin films on Y-TZP by reactive magnetron sputtering: influence of plasma parameters on the adhesion properties between Y-TZP and resin cement for application in dental prosthesis

    Directory of Open Access Journals (Sweden)

    José Renato Calvacanti de Queiroz

    2011-01-01

    Full Text Available In this paper SiOx thin films were deposited on Y-TZP ceramics by reactive magnetron sputtering technique in order to improve the adhesion properties between Y-TZP and resin cement for applications in dental prosthesis. For fixed cathode voltage, target current, working pressure and target-to-substrate distance, SiOx thin films were deposited at different oxygen concentrations in the Ar+O2 plasma forming gas. After deposition processes, SiOx thin films were characterized by profilometry, energy dispersive spectroscopy (EDS, optical microscopy and scanning electron microscopy (SEM. Adhesion properties between Y-TZP and resin cement were evaluated by shear testing. Results indicate that films deposited at 20%O2 increased the bond strength to (32.8 ± 5.4 MPa. This value has not been achieved by traditional methods.

  13. Denton Vacuum Discovery-550 Sputterer

    Data.gov (United States)

    Federal Laboratory Consortium — Description: CORAL Name: Sputter 2 Similar to the existing 4-Gun Denton Discovery 22 Sputter system, with the following enhancements: Specifications / Capabilities:...

  14. Self-sputtering and reflection

    International Nuclear Information System (INIS)

    Self-sputtering and reflection are investigated with the Monte Carlo program TRIMSP. The results include particle and energy reflection coefficients, sputtering yields and sputtered energy versus incident angle and energy. Angular and energy distributions of reflected and sputtered particles are also given. Reflection and sputtering values are compared to show their contributions to selfsputtering. A comparison of calculated sputtering yields and sputtering efficiencies (sputtering energy) with experimental data is carried out. The systems investigated are mainly the bombardment of C, Ni, and W with self-ions. (orig.)

  15. Burkina Faso - BRIGHT II

    Data.gov (United States)

    Millenium Challenge Corporation — Millennium Challenge Corporation hired Mathematica Policy Research to conduct an independent evaluation of the BRIGHT II program. The three main research questions...

  16. Investigation of the negative ions in Ar/O.sub.2./sub. plasma of magnetron sputtering discharge with Al:Zn target by ion mass spectrometry

    Czech Academy of Sciences Publication Activity Database

    Pokorný, Petr; Mišina, Martin; Bulíř, Jiří; Lančok, Ján; Fitl, Přemysl; Musil, Jindřich; Novotný, Michal

    2011-01-01

    Roč. 8, č. 5 (2011), s. 459-464. ISSN 1612-8850 R&D Projects: GA AV ČR IAA100100718; GA AV ČR KAN400100653; GA ČR GP202/09/P324 Institutional research plan: CEZ:AV0Z10100522 Keywords : energy-resolved ion mass spectrometry * formation of negative ions * magnetron sputtering * mass spectrometry * transparent conductive oxide Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.468, year: 2011

  17. Magnetospheric Sputtering Source of the Moon's Exosphere

    Science.gov (United States)

    Moore, L. E.; Wilson, J. K.; Mendillo, M.

    2002-09-01

    Observations of lunar eclipses over the past decade have revealed that the Moon's transient sodium atmosphere at full Moon is both denser and more extended near equinox than it is near solstice. This fact suggests the presence of a variable magnetospheric source of sodium. An investigation of this source is carried out by modeling combinations of two sources: a constant source from micrometeor sputtering and photon-stimulated desorption, and a variable source (presumably plasma sputtering), which is higher during equinox conditions and lower during solstice conditions.

  18. Sputtering of dimers off a silicon surface

    Science.gov (United States)

    Nietiadi, Maureen L.; Rosandi, Yudi; Kopnarski, Michael; Urbassek, Herbert M.

    2012-10-01

    We present experimental and molecular-dynamics simulation results of the sputtering of a Si surface by 2 keV Ar ions. Results on both the monomer and dimer distributions are presented. In simulation, these distributions follow a generalized Thompson law with power exponent n=2 and n=3, respectively. The experimental data, obtained via plasma post-ionization in an SNMS (secondary neutral mass spectrometry) apparatus, show good agreement with respect to the dimer fraction, and the relative energy distributions of dimers and monomers. The consequences for the dimer sputtering mechanism are discussed.

  19. Sputtering of dimers off a silicon surface

    Energy Technology Data Exchange (ETDEWEB)

    Nietiadi, Maureen L. [Physics Department, University Kaiserslautern, Erwin-Schroedinger-Strasse, D-67663 Kaiserslautern (Germany); Research Center OPTIMAS, University Kaiserslautern, Erwin-Schroedinger-Strasse, D-67663 Kaiserslautern (Germany); Rosandi, Yudi [Physics Department, University Kaiserslautern, Erwin-Schroedinger-Strasse, D-67663 Kaiserslautern (Germany); Research Center OPTIMAS, University Kaiserslautern, Erwin-Schroedinger-Strasse, D-67663 Kaiserslautern (Germany); Department of Physics, Universitas Padjadjaran, Jatinangor, Sumedang 45363 (Indonesia); Kopnarski, Michael [Physics Department, University Kaiserslautern, Erwin-Schroedinger-Strasse, D-67663 Kaiserslautern (Germany); Research Center OPTIMAS, University Kaiserslautern, Erwin-Schroedinger-Strasse, D-67663 Kaiserslautern (Germany); Institut fuer Oberflaechen- und Schichtanalytik IFOS GmbH, Trippstadter Strasse 120, D-67663 Kaiserslautern (Germany); Urbassek, Herbert M., E-mail: urbassek@rhrk.uni-kl.de [Physics Department, University Kaiserslautern, Erwin-Schroedinger-Strasse, D-67663 Kaiserslautern (Germany); Research Center OPTIMAS, University Kaiserslautern, Erwin-Schroedinger-Strasse, D-67663 Kaiserslautern (Germany)

    2012-10-15

    We present experimental and molecular-dynamics simulation results of the sputtering of a Si surface by 2 keV Ar ions. Results on both the monomer and dimer distributions are presented. In simulation, these distributions follow a generalized Thompson law with power exponent n=2 and n=3, respectively. The experimental data, obtained via plasma post-ionization in an SNMS (secondary neutral mass spectrometry) apparatus, show good agreement with respect to the dimer fraction, and the relative energy distributions of dimers and monomers. The consequences for the dimer sputtering mechanism are discussed.

  20. Sputtering of water ice

    DEFF Research Database (Denmark)

    Baragiola, R.A.; Vidal, R.A.; Svendsen, W.;

    2003-01-01

    We present results of a range of experiments of sputtering of water ice together with a guide to the literature. We studied how sputtering depends on the projectile energy and fluence, ice growth temperature, irradiation temperature and external electric fields. We observed luminescence from...

  1. Fundamentals of surfactant sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Hofsaess, Hans [Second Institute of Physics, Georg-August University Goettingen, Friedrich-Hund-Platz 1, 37077 Goettingen (Germany)], E-mail: hans.hofsaess@phys.uni-goettingen.de; Zhang Kun [Second Institute of Physics, Georg-August University Goettingen, Friedrich-Hund-Platz 1, 37077 Goettingen (Germany)

    2009-08-15

    We introduce a new sputter technique, utilizing the steady-state coverage of a substrate surface with up to 10{sup 16} cm{sup -2} of foreign atoms simultaneously during sputter erosion by combined ion irradiation and atom deposition. These atoms strongly modify the substrate sputter yield on atomic to macroscopic length scales and therefore act as surfactant atoms (a blend of 'surface active agent'). Depending on the surfactant-substrate combination, the novel technique allows enhanced surface smoothing, generation of novel surface patterns, shaping of surfaces and formation of ultra-thin films. Sputter yield attenuation is demonstrated for sputtering of Si and Fe substrates and different surfactant species using 5 keV Xe ions at different incidence angles and fluences up to 10{sup 17} cm{sup -2}. Analytical approaches and Monte Carlo simulations are used to predict the sputtering yield attenuation as function of surfactant coverage. For sputtering of Si with Au surfactants we observe high sputter yields despite a steady-state surfactant coverage, which can be explained by strong ion-induced interdiffusion of substrate and surfactant atoms and the formation of a buried Au{sub x}Si surfactant layer in dynamic equilibrium.

  2. Fundamentals of surfactant sputtering

    International Nuclear Information System (INIS)

    We introduce a new sputter technique, utilizing the steady-state coverage of a substrate surface with up to 1016 cm-2 of foreign atoms simultaneously during sputter erosion by combined ion irradiation and atom deposition. These atoms strongly modify the substrate sputter yield on atomic to macroscopic length scales and therefore act as surfactant atoms (a blend of 'surface active agent'). Depending on the surfactant-substrate combination, the novel technique allows enhanced surface smoothing, generation of novel surface patterns, shaping of surfaces and formation of ultra-thin films. Sputter yield attenuation is demonstrated for sputtering of Si and Fe substrates and different surfactant species using 5 keV Xe ions at different incidence angles and fluences up to 1017 cm-2. Analytical approaches and Monte Carlo simulations are used to predict the sputtering yield attenuation as function of surfactant coverage. For sputtering of Si with Au surfactants we observe high sputter yields despite a steady-state surfactant coverage, which can be explained by strong ion-induced interdiffusion of substrate and surfactant atoms and the formation of a buried AuxSi surfactant layer in dynamic equilibrium.

  3. The electronic structure of tungsten oxide thin films prepared by pulsed cathodic arc deposition and plasma-assisted pulsed magnetron sputtering

    International Nuclear Information System (INIS)

    Pulsed cathodic arc and pulsed magnetron sputtered WO3 thin films were investigated using electron microscopy. It was found that the cathodic arc deposited material consisted of the α-WO3 phase with a high degree of crystallinity. In contrast, the magnetron sputtered material was highly disordered making it difficult to determine its phase. Electron energy-loss spectroscopy was used to study the oxygen K edge of the films and it was found that the near-edge fine structures of films produced by the two deposition methods differed. The oxygen K-edge near-edge structures for various phases of WO3 were calculated using two different self-consistent methods. Each phase was found to exhibit a unique oxygen K edge, which would allow different phases of WO3 to be identified using x-ray absorption spectroscopy or electron energy-loss spectroscopy. Both calculation methods predicted an oxygen K edge for the γ-WO3 phase which compared well to previous x-ray absorption spectra. In addition, a close match was found between the oxygen K edges obtained experimentally from the cathodic arc deposited material and that calculated for the α-WO3 phase

  4. BrightFocus Foundation

    Science.gov (United States)

    ... size: A A Contrast En Español Donate BrightFocus Foundation Alzheimer’s Disease Research Macular Degeneration Research National Glaucoma ... Bovenkamp, Ph.D., Scientific Program Officer for BrightFocus Foundation, about the basic science and therapeutic research the ...

  5. CME impact on Mercury's sputtered exospheric environment

    Science.gov (United States)

    Pfleger, M.; Lichtenegger, H. I. M.; Lammer, H.; Mura, A.; Wurz, P.; Martin-Fernandez, J. A.

    2013-09-01

    Solar wind and magnetospheric plasma precipitation onto the surface of Mercury triggers the formation of exospheric particle populations by sputtering processes. Numerical modeling of Mercury's magnetosphere has shown that the weak intrinsic magnetic field of the planet is sufficient to prevent the equatorial regions from being impacted by solar wind ions during moderate solar wind conditions. However, intense fluxes of protons are expected to hit the auroral regions, giving rise to the release of surface elements at high latitudes by ion sputtering. During high solar wind dynamic pressure conditions in the case of CME events, the solar wind protons will have access to Mercury's entire dayside surface, which may result in a considerable filling of the exosphere by sputtered surface material.

  6. The application of an assisting gas plasma generator for low-temperature magnetron sputtering of Ti-C-Mo-S antifriction coatings on titanium alloys

    OpenAIRE

    Potekaev, A. I.; Savostikov , V. M.; Tabachenko, Aleksandr Nikitich; Dudarev, E. F.; Melnikova, E. A.; Shulepov, Ivan Anisimovich

    2015-01-01

    The positive effect of assisting influence of high-density gas plasma formed by an independent plasma generator PINK on mechanical and tribological characteristics of Ti-C-Mo-S magnetron coating on titanium alloys at lowered to 350°С temperature of coating regardless of alloy structural condition was revealed by methods of calotest, nanorecognition, scratch testing and frictional material tests. The coating formed by means of a combined magnetron plasma method reduces titanium alloys friction...

  7. Effect of microstructure of TiN film on properties as bipolar plate coatings in polymer electrolyte membrane fuel cell prepared by inductively coupled plasma assisted magnetron sputtering

    International Nuclear Information System (INIS)

    As potential application in bipolar plate of polymer electrolyte membrane fuel cell, the microstructure, corrosion resistance and the electrical conductivity of titanium nitride (TiN) and Si doped titanium nitride (Ti0.9Si0.1N) films deposited by magnetron sputtering with different bias voltages are investigated by X-ray diffraction (XRD), scanning electron microscope (SEM), atomic force microscope (AFM), electrochemical test and four-point probe method, respectively. XRD, SEM and AFM results reveal that the texture and topography of TiN film depend on the bias voltage and incorporation of Si. When the bias voltage is − 20 V and − 30 V, the TiN and Ti0.9Si0.1N films exhibit a dense (111) plane preferred growth, denser structure and smoother surface topography. The potentiodynamic test results indicate that the TiN and Ti0.9Si0.1N films have higher chemical inertness and better corrosion resistance. The films can satisfy the requirement of current density for bipolar plate materials. Incorporation of Si element into TiN film makes the passive current density more stable. Four-point probe measurement results show that the resistivity of both TiN and Ti0.9Si0.1N films reaches minimum when the deposition bias voltage is − 20 V. - Highlights: • Dense TiN and Ti0.9Si0.1N films are deposited by magnetron sputtering. • Preferred growth orientation of TiN depends on the bias voltage and Si doping. • TiN and Ti0.9Si0.1N films have excellent corrosion resistance. • Surface conductivity of TiN and Ti0.9Si0.1N films evolves with bias voltage

  8. Application of dynamic scaling theory for growth kinetic studies of AlN-thin films deposited by ion beam sputtering in reactive assistance of nitrogen plasma

    International Nuclear Information System (INIS)

    Highlights: • Growth kinetics of ion beam sputtered AlN-thin films by dynamic scaling theory. • AFM measurements show different morphologies due to varying deposition times 3, 5, 8 and 15 min. • Growth governing static (α) and dynamic (β) scaling exponents were determined in each case. • Four smoothening/roughening mechanisms are plastic flow, evaporation-recondensation, bulk-diffusion and surface diffusion. • Removal of over-hanging atoms, near surface defects, surface collision cascade and assistive ion-induced dissociation of clusters are the responsible phenomenona for the transition between different growth stages. - Abstract: Ion beam sputter deposition of AlN thin films to different time scales was carried out in reactive assistance of N+/N2+ ions. The incipient stages of the growth morphology were characterized using atomic force microscopy. Dynamic scaling theory was invoked to analyze the evolution of surface roughness and the growth mechanism therein. Two distinct exponents ‘α’ (static) and ‘β’ (dynamic) were used to unravel the film growth characteristics. Our results show that as the deposition time (t) increases, ‘α’ decreases gradually and substrate surface coverage increases indicated by a decrease in critical length Lc. Dynamic scaling exponent ‘β’ was estimated to be 0.36 for the deposition from isolated nuclei to full surface coverage of the substrate. During the growth, rms roughness of the film was increased from 1.99 to 3.42 nm as the deposition time was increased from 3 min to 15 min. Surface diffusion becomes the major roughening phenomenon while bulk diffusion subside it at each stage by smoothening to yield corresponding rms roughness

  9. Sunspot Bright Points

    CERN Document Server

    Choudhary, Debi Prasad

    2010-01-01

    We used the flux calibrated images through the Broad Band Filter Imager and Stokes Polarimeter data obtained with the Solar Optical Telescope onboard the Hinode spacecraft to study the properties of bright points in and around the sunspots. The well isolated bright points were selected and classified as umbral dot, peripheral umbral dot, penumbral grains and G-band bright point depending on their location. Most of the bright points are smaller than about 150 km. The larger points are mostly associated with the penumbral features. The bright points are not uniformly distributed over the umbra but preferentially located around the penumbral boundary and in the fast decaying parts of umbra. The color temperature of the bright points, derived using the continuum irradiance, are in the range of 4600 K to 6600 K with cooler ones located in the umbra. The temperature increases as a function of distance from the center to outside. The G-band, CN-band and CaII H flux of the bright points as a function of their blue ba...

  10. Conservation of an ion beam brightness. Study of a non brightness disturbing lens

    International Nuclear Information System (INIS)

    Experimental studies of ion sources prove that large initial brightnesses can be obtained by using the plasma expansion principle. However these brightnesses are usually spoiled by the beam focusing and accelerating systems. A high intensity focusing set up is first theoretically studied, then numerically determined by use of a 7094 IBM computer. Aberrations have been minimized. It has then been possible to construct a set up conserving the source initial brightness. For a 100 mA beam the focusing voltage is 150 kV, the beam study has been done for 350 keV beam final energy. Given is a discussion of results. (author)

  11. The application of an assisting gas plasma generator for low- temperature magnetron sputtering of Ti-C-Mo-S antifriction coatings on titanium alloys

    Science.gov (United States)

    Potekaev, A. I.; Savostikov, V. M.; Tabachenko, A. N.; Dudarev, E. F.; Melnikova, E. A.; Shulepov, I. A.

    2015-11-01

    The positive effect of assisting influence of high-density gas plasma formed by an independent plasma generator PINK on mechanical and tribological characteristics of Ti-C- Mo-S magnetron coating on titanium alloys at lowered to 350°C temperature of coating regardless of alloy structural condition was revealed by methods of calotest, nanorecognition, scratch testing and frictional material tests. The coating formed by means of a combined magnetron plasma method reduces titanium alloys friction coefficient in multiple times and increases wear resistance by two orders of magnitude. At the same time the mechanical properties of ultra-fine-grained titanium alloys obtained by nanostructuring do not deteriorate.

  12. Pulsed dc self-sustained magnetron sputtering

    International Nuclear Information System (INIS)

    The magnetron sputtering has become one of the commonly used techniques for industrial deposition of thin films and coatings due to its simplicity and reliability. At standard magnetron sputtering conditions (argon pressure of ∼0.5 Pa) inert gas particles (necessary to sustain discharge) are often entrapped in the deposited films. Inert gas contamination can be eliminated during the self-sustained magnetron sputtering (SSS) process, where the presence of the inert gas is not a necessary requirement. Moreover the SSS process that is possible due to the high degree of ionization of the sputtered material also gives a unique condition during the transport of sputtered particles to the substrate. So far it has been shown that the self-sustained mode of magnetron operation can be obtained using dc powering (dc-SSS) only. The main disadvantage of the dc-SSS process is its instability related to random arc formation. In such case the discharge has to be temporarily extinguished to prevent damaging both the magnetron source and power supply. The authors postulate that pulsed powering could protect the SSS process against arcs, similarly to reactive pulsed magnetron deposition processes of insulating thin films. To put this concept into practice, (i) the high enough plasma density has to be achieved and (ii) the type of pulsed powering has to be chosen taking plasma dynamics into account. In this article results of pulsed dc self-sustained magnetron sputtering (pulsed dc-SSS) are presented. The planar magnetron equipped with a 50 mm diameter and 6 mm thick copper target was used during the experiments. The maximum target power was about 11 kW, which corresponded to the target power density of ∼560 W/cm2. The magnetron operation was investigated as a function of pulse frequency (20-100 kHz) and pulse duty factor (50%-90%). The discharge (argon) extinction pressure level was determined for these conditions. The plasma emission spectra (400-410 nm range) and deposition

  13. Effect of the plasma composition on the structural and electronic properties of as-grown SiOx/Si heterolayers deposited by reactive sputtering

    International Nuclear Information System (INIS)

    We report the effects of varying the oxygen partial pressure (OPP) on the structural and electronic properties of SiOx/Si heterolayers grown by RF reactive sputtering. The produced samples present silicon poly-crystalline characteristics for low values of OPP. The crystallinity decreases as the OPP increases due to oxygen interdiffusion until the silicon crystal structure becomes amorphous. The results of infrared and Raman spectroscopies show higher deviation from stoichiometry and an increment of structural disorder for samples grown with higher values of OPP. Room temperature photoluminescence (PL) is present in all as-grown samples. The PL spectra show two bands, around 1.87 and 2.16 eV, for all the samples, while a third broad band at lower energy shows up and shifts to the red as OPP increases. Our results indicate that silicon-related room temperature PL emission is correlated with the stoichiometry of the SiOx and to the formation of silicon crystals embedded in a silicon dioxide matrix

  14. Comparative study of total power density at a substrate in pulsed DC magnetron and hollow-cathode plasma jet sputtering systems

    Czech Academy of Sciences Publication Activity Database

    Čada, Martin; Virostko, Petr; Kment, Štěpán; Hubička, Zdeněk

    2009-01-01

    Roč. 6, S1 (2009), S247-S252. ISSN 1612-8850. [International Conference on Plasma Surface Engineering /11./. Garmisch Partenkirchen, 15.09.2008-19.09.2008] R&D Projects: GA AV ČR KAN301370701; GA AV ČR KJB100100707; GA AV ČR KJB100100805; GA MŠk(CZ) 1M06002 Institutional research plan: CEZ:AV0Z10100522 Keywords : calorimeter probe * floating substrate * magnetron * plasma jet * pulsed discharge Subject RIV: BH - Optics, Masers, Lasers Impact factor: 4.037, year: 2009

  15. High Brightness Test Stand

    International Nuclear Information System (INIS)

    The High Brightness Test Stand is a 2 MeV, less than or equal to 10 kA electron accelerator module. This accelerator module, designed as an upgrade prototype for the Advanced Test Accelerator (ATA), combines solid state nonlinear magnetic drives with state-of-the-art induction linac technology. The facility serves a dual role, as it not only provides a test bed for this new technology, but is used to develop high brightness electron optics. We will both further describe the accelerator, as well as present some of the preliminary electron optics measurements

  16. Anion formation in sputter ion sources by neutral resonant ionization

    Energy Technology Data Exchange (ETDEWEB)

    Vogel, J. S., E-mail: johnsvogel@yahoo.com [University of California, 8300 Feliz Creek Dr., Ukiah, California 95482 (United States)

    2016-02-15

    Focused Cs{sup +} beams in sputter ion sources create mm-diameter pits supporting small plasmas that control anionization efficiencies. Sputtering produces overwhelmingly neutral products that the plasma can ionize as in a charge-change vapor. Electron capture between neutral atoms rises as the inverse square of the difference between the ionization potential of the Cs state and the electron affinity of the sputtered atom, allowing resonant ionization at very low energies. A plasma collision-radiation model followed electronic excitation up to Cs(7d). High modeled Cs(7d) in a 0.5 mm recess explains the 80 μA/mm{sup 2} C{sup −} current density compared to the 20 μA/mm{sup 2} from a 1 mm recess.

  17. Anion formation in sputter ion sources by neutral resonant ionization

    Science.gov (United States)

    Vogel, J. S.

    2016-02-01

    Focused Cs+ beams in sputter ion sources create mm-diameter pits supporting small plasmas that control anionization efficiencies. Sputtering produces overwhelmingly neutral products that the plasma can ionize as in a charge-change vapor. Electron capture between neutral atoms rises as the inverse square of the difference between the ionization potential of the Cs state and the electron affinity of the sputtered atom, allowing resonant ionization at very low energies. A plasma collision-radiation model followed electronic excitation up to Cs(7d). High modeled Cs(7d) in a 0.5 mm recess explains the 80 μA/mm2 C- current density compared to the 20 μA/mm2 from a 1 mm recess.

  18. Anion formation in sputter ion sources by neutral resonant ionization

    International Nuclear Information System (INIS)

    Focused Cs+ beams in sputter ion sources create mm-diameter pits supporting small plasmas that control anionization efficiencies. Sputtering produces overwhelmingly neutral products that the plasma can ionize as in a charge-change vapor. Electron capture between neutral atoms rises as the inverse square of the difference between the ionization potential of the Cs state and the electron affinity of the sputtered atom, allowing resonant ionization at very low energies. A plasma collision-radiation model followed electronic excitation up to Cs(7d). High modeled Cs(7d) in a 0.5 mm recess explains the 80 μA/mm2 C− current density compared to the 20 μA/mm2 from a 1 mm recess

  19. Cross-field diode sputtering target assembly

    International Nuclear Information System (INIS)

    An improved cross-field diode sputtering target assembly adapted for sputtering a selected material having an ion target wherein a selected surface is formed of a selected material in a predetermined closed loop pattern having a central opening therein, and wherein the selected surface has spaced edges and is formed of a material adapted to be controllably eroded in a diode sputtering process, walls positioned contiguous or adjacent to each of the spaced edges of the selected surface wherein each of the walls extend substantially normal from and beyond each spaced edge of the selected surface of the ion target and a magnetic member having poles positioned in an opposed spaced relationship to each other and enclosing the walls and the ion target for providing a linear magnetic field through the walls, over the selected surface and through the ion target and wherein the magnetic member has a linear magnetic field of sufficient strength for plasma entrapment between the walls and over the selected surface wherein the selected surface is adapted to have an electric field applied thereacross at a direction substantially normal to the magnetic field to develop a BXE field and to entrap secondary electrons at the selected surface to control the erosion pattern thereof is shown. A method for utilizing the improved cross-field diode sputtering target assembly is also shown

  20. Plasma study and deposition of DLC/TiC/Ti multilayer structures using technique combining pulsed laser deposition and magnetron sputtering

    Czech Academy of Sciences Publication Activity Database

    Bulíř, Jiří; Novotný, Michal; Jelínek, Miroslav; Kocourek, Tomáš; Studnička, Václav

    2005-01-01

    Roč. 200, - (2005), s. 708-711. ISSN 0257-8972 R&D Projects: GA AV ČR(CZ) IAA1010110; GA ČR(CZ) GP106/02/P015; GA MŠk(CZ) LN00A015 Institutional research plan: CEZ:AV0Z10100522 Keywords : pulsed laser deposition * magnetron * optical emission spectroscopy * x-ray diffraction * nanostructure Subject RIV: BL - Plasma and Gas Discharge Physics Impact factor: 1.646, year: 2005

  1. A self-sputtering ion source: A new approach to quiescent metal ion beams

    OpenAIRE

    Oks, Efim M.

    2010-01-01

    A new metal ion source is presented based on sustained self-sputtering plasma in a magnetron discharge. Metals exhibiting high self-sputtering yield like Cu, Ag, Zn, and Bi can be used in a high-power impulse magnetron sputtering (HIPIMS) discharge such that the plasma almost exclusively contains singly charged metal ions of the target material. The plasma and extracted ion beam are quiescent. The ion beams consist mostly of singly charged ions with a space-charge limited current density w...

  2. A self-sputtering ion source: A new approach to quiescent metal ion beams

    Energy Technology Data Exchange (ETDEWEB)

    Oks, Efim M.; Anders, Andre

    2009-09-03

    A new metal ion source is presented based on sustained self-sputtering plasma in a magnetron discharge. Metals exhibiting high self-sputtering yield like Cu, Ag, Zn, and Bi can be used in a high-power impulse magnetron sputtering (HIPIMS) discharge such that the plasma almost exclusively contains singly charged metal ions of the target material. The plasma and extracted ion beam are quiescent. The ion beams consist mostly of singly charged ions with a space-charge limited current density which reached about 10 mA/cm2 at an extraction voltage of 45 kV and a first gap spacing of 12 mm.

  3. Some mechanical properties of DLC and CN.sub.x./sub. coatings deposited by reactive sputtering or plasma-chemical techniques

    Czech Academy of Sciences Publication Activity Database

    Boháč, Petr; Kulikovsky, V. Y.; Šícha, M.

    Eibar : Fundatión TEKNIKER, 2000 - (Igartua, A.; Alberdi, A.), s. 117-125 ISBN 84-699-2557-1. [COST 516 Tribology Symposium. Eibar (ES), 15.05.2000-19.05.2000] R&D Projects: GA MŠk(CZ) OC 516.50 Institutional research plan: CEZ:AV0Z1010914 Keywords : amorphous films a-C, a-C:H, Ti-C:H, and CNx * mechanical and tribological properties * intrinsic stress evolution * adhesion Subject RIV: BL - Plasma and Gas Discharge Physics

  4. Sputtering of nano-grains by energetic ions

    CERN Document Server

    Bringa, E M

    2002-01-01

    Sputtering from grains with a size of tens of nanometers is important in a number of astrophysical environments having a variety of plasma properties and can have applications in nano-technology. Since energy deposition by incident ions or electrons can create 'hot' regions in a small grain, thermal spike (TS) models have been applied to estimate the sputtering. The excitations produced by a fast ion are often assumed to form a 'hot' cylindrical track. In this paper we use molecular dynamics (MD) calculations to describe the energy transport and sputtering due to the creation of a 'hot' track in a grain with one quarter million atoms. We show the enhancement due to grain size and find that TS models work over a limited range of excitation densities. Discrepancies of several orders of magnitude are found when comparing our MD results for sputtering of small dust grains to those obtained by the astrophysical community using spike models.

  5. Hydorgen sputtering of carbon thin films deposited on platinum

    International Nuclear Information System (INIS)

    Carbon has been suggested as a suitable low Z element for the lining of the first walls of controlled thermonuclear reactors in order to reduce radiative plasma losses due to sputtering. In this paper the measurement of sputtering of carbon thin films by protons in the energy range 0.6-10.0 keV, is described. H2+ or H3+ ions were used as bombarding ions to obtain equivalent H+ sputtering yields at energies below that at which the ion source provides sufficient proton current. The sputter yield was found to range from 7x10-3-1.5x10-2 atoms/proton with a broad maximum in the 2.0 keV region with the carbon film kept near ambient temperature. (B.D.)

  6. Study of ion-induced optical emission spectra in sputtering of scandium target

    International Nuclear Information System (INIS)

    Ion-induced optical emission spectra excited by bombardment of scandium target with 40 keV Xe+ ions are studied in spectral region of 380-600nm. Excitation efficiencies of atomic energy levels in sputtering processes and in plasma discharge are compared. Possible new mechanisms of electron excitation in ion sputtering of metals are discussed. (author)

  7. The brightness of colour.

    Directory of Open Access Journals (Sweden)

    David Corney

    Full Text Available BACKGROUND: The perception of brightness depends on spatial context: the same stimulus can appear light or dark depending on what surrounds it. A less well-known but equally important contextual phenomenon is that the colour of a stimulus can also alter its brightness. Specifically, stimuli that are more saturated (i.e. purer in colour appear brighter than stimuli that are less saturated at the same luminance. Similarly, stimuli that are red or blue appear brighter than equiluminant yellow and green stimuli. This non-linear relationship between stimulus intensity and brightness, called the Helmholtz-Kohlrausch (HK effect, was first described in the nineteenth century but has never been explained. Here, we take advantage of the relative simplicity of this 'illusion' to explain it and contextual effects more generally, by using a simple Bayesian ideal observer model of the human visual ecology. We also use fMRI brain scans to identify the neural correlates of brightness without changing the spatial context of the stimulus, which has complicated the interpretation of related fMRI studies. RESULTS: Rather than modelling human vision directly, we use a Bayesian ideal observer to model human visual ecology. We show that the HK effect is a result of encoding the non-linear statistical relationship between retinal images and natural scenes that would have been experienced by the human visual system in the past. We further show that the complexity of this relationship is due to the response functions of the cone photoreceptors, which themselves are thought to represent an efficient solution to encoding the statistics of images. Finally, we show that the locus of the response to the relationship between images and scenes lies in the primary visual cortex (V1, if not earlier in the visual system, since the brightness of colours (as opposed to their luminance accords with activity in V1 as measured with fMRI. CONCLUSIONS: The data suggest that perceptions

  8. Low-energy BO and BO 2 emission from H 2BO 3 sputtered in a low-pressure high-frequency SNMS plasma

    Science.gov (United States)

    Jenett, Holger; Ai, Xingtao; Hodoroaba, Vasile-Dan; Iga, Ione; Mu Tao, Lee

    1999-07-01

    Background corrected secondary neutral energy spectra derived from Cu powder pellets with H 3BO 3, MgO, Al 2O 3, TiO 2, Y 2O 3 and ZrO 2, show energy distributions being more or less typical for collision cascades in the cases of the metal ions M +, of O + at energies >5 eV above the ion generation potential, and of the molecules Cu 2+, AlO +, TiO +, YO + and ZrO +, whereas the larger parts of the energy distributions of BO +and BO 2+exhibit a similar shape as the Ar +plasma gas ions. From this, and from the background of the low decomposition and melting temperatures of H 3BO 3 and B 2O 3, respectively, we conclude that the detected BO and BO 2 molecules have been emitted with thermal energies in processes implying lower energies than collision cascades. Evidence was found that the same holds for HBO 2 and H 2BO 2. In order to obtain relative correction factors for MO + molecular ion intensities, electron impact ionization cross sections have been calculated for the light MO molecules using the binary-encounter Bethe (BEB) formula, and for the respective metal M atoms by means of the semiempirical Lotz formula. For the heavy MO molecules YO and ZrO, cross sections have been estimated using the Thomson formula. The comparison of corrected relative MO/M and M/Cu intensities yields evidence that thermal (H)BO x emission amounts to the same order of magnitude as B emission from collision cascades, and that this situation is comparable to the high yield of MO molecules emitted in collision cascades from oxides with high M masses. Since the normal energy window of an HF-plasma secondary neutral mass spectrometer does not accept particles with originally thermal energies, it is concluded that these findings are relevant for quantification.

  9. Bright Economic Prospects

    Institute of Scientific and Technical Information of China (English)

    Zhang Minqiu

    2004-01-01

    @@ India is expected to register an 8.2% growth rate for the 2003-04 fiscal year. The overall economic situation this year has been satisfactory despite the scaled down 6-6.5% growth rate for the new fiscal year due to oil price hikes, reduced monsoon volume and some 7% inflation. Judging from the following factors, bright prospects are in store for the country down the road.

  10. Estimation of the Efficiency of Material Injection into the Reflex Discharge by Sputtering the Cathode Material

    CERN Document Server

    Kovtun, Yu V; Skibenko, A I; Yuferov, V B

    2012-01-01

    The processes of injection of a sputtered-and-ionized working material into the pulsed reflex discharge plasma have been considered at the initial stage of dense gas-metal plasma formation. A calculation model has been proposed to estimate the parameters of the sputtering mechanism for the required working material to be injected into the discharge. The data obtained are in good accordance with experimental results.

  11. RF Reactive Magnetron Sputter Deposition of Silicon Sub-Oxides

    NARCIS (Netherlands)

    Hattum, E.D. van

    2007-01-01

    RF reactive magnetron plasma sputter deposition of silicon sub oxide E.D. van Hattum Department of Physics and Astronomy, Faculty of Sciences, Utrecht University The work described in the thesis has been inspired and stimulated by the use of SiOx layers in the direct inductive printing technology, w

  12. Origin of bright flares in SFXTs

    CERN Document Server

    Postnov, K; Sidoli, L; Paizis, A

    2014-01-01

    In the settling accretion theory, which is applicable to quasi-spherical accreting slowly rotating magnetized neutron stars with X-ray luminosity $L_x\\lesssim 4\\times 10^{36}$~erg/s, bright X-ray flares ($\\sim 10^{38}-10^{40}$~ergs) observed in supergiant fast X-ray transients (SFXT) may be produced by sporadic capture of magnetized stellar-wind plasma from the early-type supergiant. At sufficiently low steady accretion rates ($\\lesssim 10^{15}$~g/s) through the shell around the neutron star magnetosphere at the settling accretion stage, magnetic reconnection can temporarily enhance the magnetospheric plasma entry rate, resulting in copious production of X-ray photons, strong Compton cooling, and ultimately in unstable accretion of the entire shell. A bright flare develops on the free-fall time scale in the shell, $R_B^{3/2}/\\sqrt{GM}\\sim 10^3-10^4$~s ($R_B$ is the classical Bondi capture radius), and the typical energy released in an SFXT bright flare corresponds to the mass of the shell.

  13. Mass distribution of sputtered cathode material in the reflex discharge along the magnetic field mirror configuration

    International Nuclear Information System (INIS)

    he paper is concerned with the distribution of cathode material sputtered under the action of the pulsed reflex discharge plasma and deposited on the anode surface (vacuum chamber) by means of a set of discrete receiving plates. Correlative relationship has been found between the weight gain increase of the receiving plates due to the deposition of cathode material (Ti) particles on them and the increasing magnetic field regions. The maximum possible sputtering yield Ycurr has been evaluated. The authors have deduced parametric dependences of the sputtering ratio on the power function exponent that determines the shape of the radial plasma-density profile, and also, on the magnetic field induction value

  14. Noble gas sputtering calculations using TRIM

    International Nuclear Information System (INIS)

    In conjunction with our experimental work on saddle field ion sputtering, we have attempted to apply the Monte Carlo program TRIM (Transport of Ions in Matter) to calculate the sputter yields for a variety of noble gas sputtering applications. Comparison with experiments are shown. Information extracted from these analyses have proved useful in optimizing the experimental sputtering parameters. Calculated sputter yields obtained utilizing TRIM are presented for noble gas sputtering of a variety of materials common to nuclear target production

  15. Study of the chemical sputtering in Tore-Supra

    International Nuclear Information System (INIS)

    The work presented in this thesis focuses on the interactions between energetic particles coming from thermonuclear plasma and the inner components of a fusion machine. This interaction induces two major problems: erosion of the wall, and tritium retention. This report treats the erosion of carbon based materials. The first part is devoted to chemical sputtering, that appears to be the principal erosion mechanism, compared to physical sputtering and radiation enhanced sublimation that both can be limited. Chemical sputtering has been studied in situ in the tokamak Tore-Supra for ohmic and lower hybrid (LH) heated discharges, by means of mass spectrometry and optical spectroscopy. We have shown that it is necessary to take into account both methane and heavier hydrocarbons (C2Dx and C3Dy) in the determination of the chemical sputtering yield. It is found that for the ohmic discharges, the sputtering yield of CD4 (YCD4) is highly flux (φ) dependent, showing a variation of the form: YCD4 ∝ φ-0.23. The experimental study also reveals that an increase of the surface temperature induces an augmentation of YCD4. The interpretation and the modelling of the experimental results have been performed with a Monte Carlo code (BBQ. In the second part of this work, we have developed and installed an infrared spectroscopy diagnostic in the 0.8-1.6, μm wavelength range dedicated to the measurement of surface temperature, and the identification of atomic and molecular lines emitted during plasma/wall interactions. In the third part, we present the feasibility study of an in situ tungsten deposition process at low temperature(<80 deg C) in order to suppress the chemical sputtering. This study shows that, with this method call Plasma Assisted Chemical Vapor Deposition (PACVD), we are able to coat the whole inner vessel of a tokamak with 1 μm of tungsten. (author)

  16. High brightness electron sources

    International Nuclear Information System (INIS)

    High energy physics accelerators and free electron lasers put increased demands on the electron beam sources. This paper describes the present research on attaining intense bright electron beams using photoinjectors. Recent results from the experimental programs will be given. The performance advantages and difficulties presently faced by researchers will be discussed, and the following topics will be covered. Progress has been made in photocathode materials, both in lifetime and quantum efficiency. Cesium telluride has demonstrated significantly longer lifetimes than cesium antimonide at 10-8 torr. However, the laser system is more difficult because cesium telluride requires quadrupled YLF instead of the doubled YLF required for cesium antimonide. The difficulty in using photoinjectors is primarily the drive laser, in particular the amplitude stability. Finally, emittance measurements of photoinjector systems can be complicated by the non-thermal nature of the electron beam. An example of the difficulty in measuring beam emittance is given

  17. Simulations of carbon sputtering in fusion reactor divertor plates

    International Nuclear Information System (INIS)

    The interaction of edge plasma with material surfaces raises key issues for the viability of the International Thermonuclear Reactor (ITER) and future fusion reactors, including heat-flux limits, net material erosion, and impurity production. After exposure of the graphite divertor plate to the plasma in a fusion device, an amorphous C/H layer forms. This layer contains 20-30 atomic percent D/T bonded to C. Subsequent D/T impingement on this layer produces a variety of hydrocarbons that are sputtered back into the sheath region. We present molecular dynamics (MD) simulations of D/T impacts on amorphous carbon layer as a function of ion energy and orientation, using the AIREBO potential. In particular, energies are varied between 10 and 150 eV to transition from chemical to physical sputtering. These results are used to quantify yield, hydrocarbon composition and eventual plasma contamination

  18. Sputtering of a silicon surface: Preferential sputtering of surface impurities

    Czech Academy of Sciences Publication Activity Database

    Nietiadi, M.L.; Rosandi, Y.; Lorinčík, Jan; Urbassek, H.M.

    -, č. 303 (2013), s. 205-208. ISSN 0168-583X Institutional support: RVO:67985882 Keywords : Sputtering * Molecular dynamics * SIMS Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 1.186, year: 2013

  19. Sputtering. [as deposition technique in mechanical engineering

    Science.gov (United States)

    Spalvins, T.

    1976-01-01

    This paper primarily reviews the potential of using the sputtering process as a deposition technique; however, the manufacturing and sputter etching aspects are also discussed. Since sputtering is not regulated by classical thermodynamics, new multicomponent materials can be developed in any possible chemical composition. The basic mechanism for dc and rf sputtering is described. Sputter-deposition is described in terms of the unique advantageous features it offers such as versatility, momentum transfer, stoichiometry, sputter-etching, target geometry (coating complex surfaces), precise controls, flexibility, ecology, and sputtering rates. Sputtered film characteristics, such as strong adherence and coherence and film morphology, are briefly evaluated in terms of varying the sputtering parameters. Also described are some of the specific industrial areas which are turning to sputter-deposition techniques.

  20. Coronal bright points associated with minifilament eruptions

    International Nuclear Information System (INIS)

    Coronal bright points (CBPs) are small-scale, long-lived coronal brightenings that always correspond to photospheric network magnetic features of opposite polarity. In this paper, we subjectively adopt 30 CBPs in a coronal hole to study their eruptive behavior using data from the Atmospheric Imaging Assembly (AIA) and the Helioseismic and Magnetic Imager (HMI) on board the Solar Dynamics Observatory. About one-quarter to one-third of the CBPs in the coronal hole go through one or more minifilament eruption(s) (MFE(s)) throughout their lifetimes. The MFEs occur in temporal association with the brightness maxima of CBPs and possibly result from the convergence and cancellation of underlying magnetic dipoles. Two examples of CBPs with MFEs are analyzed in detail, where minifilaments appear as dark features of a cool channel that divide the CBPs along the neutral lines of the dipoles beneath. The MFEs show the typical rising movements of filaments and mass ejections with brightenings at CBPs, similar to large-scale filament eruptions. Via differential emission measure analysis, it is found that CBPs are heated dramatically by their MFEs and the ejected plasmas in the MFEs have average temperatures close to the pre-eruption BP plasmas and electron densities typically near 109 cm–3. These new observational results indicate that CBPs are more complex in dynamical evolution and magnetic structure than previously thought.

  1. RF sputtering for controlling dihydride and monohydride bond densities in amorphous silicon hydride

    Science.gov (United States)

    Jeffery, F.R.; Shanks, H.R.

    1980-08-26

    A process is described for controlling the dihydride and monohydride bond densities in hydrogenated amorphous silicone produced by reactive rf sputtering of an amorphous silicon target. There is provided a chamber with an amorphous silicon target and a substrate therein with the substrate and the target positioned such that when rf power is applied to the target the substrate is in contact with the sputtering plasma produced thereby. Hydrogen and argon are fed to the chamber and the pressure is reduced in the chamber to a value sufficient to maintain a sputtering plasma therein, and then rf power is applied to the silicon target to provide a power density in the range of from about 7 watts per square inch to about 22 watts per square inch to sputter an amorphous solicone hydride onto the substrate, the dihydride bond density decreasing with an increase in the rf power density. Substantially pure monohydride films may be produced.

  2. Intensity and energy distributions of neutral chromium clusters sputtered by low-energy argon ions

    International Nuclear Information System (INIS)

    The technique of sputtered neutral mass spectrometry (SNMS) was used to study energy distributions of neutral chromium dimers (Cr2) and yield distributions of neutral chromium dimers and trimers (Cr3) sputtered from a polycrystalline chromium target by normally incident singly charged argon ions (Ar+) with energies from 200 to 900 electron volts. The argon ions were generated in a thermionically sustained, magnetically confined AR plasma operating at a pressure of approximately 2 x 10-3 torr. The plasma also served as a means of efficiently positioning the sputtered neutral cluster. The slopes of high energy tails of the sputtered chromium dimer energy distributions were calculated and were found to give results consistent with a statistical recombination model of neutral cluster formation. The yield distribution of the neutral Cr2 molecules was also found to be in agreement with the predicted dependence of dimer yield on total sputtering yield for the recombination model, i.e., that the dimer yield should be proportional to the square of the total sputtering yield for chromium. The neutral Cr3 molecules observed were estimated to be less than 10-5 of the total sputtering yield

  3. Damage at hydrogenated amorphous/crystalline silicon interfaces by indium tin oxide overlayer sputtering

    OpenAIRE

    Demaurex, Bénédicte; De Wolf, Stefaan; Descoeudres, Antoine; Charles Holman, Zachary; Ballif, Christophe

    2012-01-01

    Damage of the hydrogenated amorphous/crystalline silicon interface passivation during transparent conductive oxide sputtering is reported. This occurs in the fabrication process of silicon heterojunction solar cells. We observe that this damage is at least partially caused by luminescence of the sputter plasma. Following low-temperature annealing, the electronic interface properties are recovered. However, the silicon-hydrogen configuration of the amorphous silicon film is permanently changed...

  4. Using the Multipole Resonance Probe to Stabilize the Electron Density During a Reactive Sputter Process

    Science.gov (United States)

    Oberberg, Moritz; Styrnoll, Tim; Ries, Stefan; Bienholz, Stefan; Awakowicz, Peter

    2015-09-01

    Reactive sputter processes are used for the deposition of hard, wear-resistant and non-corrosive ceramic layers such as aluminum oxide (Al2O3) . A well known problem is target poisoning at high reactive gas flows, which results from the reaction of the reactive gas with the metal target. Consequently, the sputter rate decreases and secondary electron emission increases. Both parameters show a non-linear hysteresis behavior as a function of the reactive gas flow and this leads to process instabilities. This work presents a new control method of Al2O3 deposition in a multiple frequency CCP (MFCCP) based on plasma parameters. Until today, process controls use parameters such as spectral line intensities of sputtered metal as an indicator for the sputter rate. A coupling between plasma and substrate is not considered. The control system in this work uses a new plasma diagnostic method: The multipole resonance probe (MRP) measures plasma parameters such as electron density by analyzing a typical resonance frequency of the system response. This concept combines target processes and plasma effects and directly controls the sputter source instead of the resulting target parameters.

  5. Measurements of the critical inclusion size for arcing and macroparticle ejection from aluminum sputtering targets

    International Nuclear Information System (INIS)

    Arcing during sputtering is a significant cause of defect generation during sputter deposition of thin films. We studied the effect of dielectric inclusion size on the propensity for arcing while sputtering aluminum targets in argon at power densities ranging from 8 to near 60 W/cm2. We found that there is a critical inclusion size required for arcing to occur. The critical size for an Al2O3 inclusion in an aluminum-sputtering target in an argon plasma is 440±160 μm. Inclusions with sizes above this critical value readily induce arcing and macroparticle ejection during sputtering. Inclusions below this critical size do not cause arcing or macroparticle ejection. We also found that the inclusion critical size was not sensitive to the sputtering power density. When the inclusion size exceeds the critical value the plasma boundary over the inclusion is deformed by the charge accumulating on the dielectric inclusion and the plasma positive column diffuses toward the target leading to a bipolar arc. Inclusions below the critical size do not distort the dark space to an extent great enough to permit bipolar arc formation. Our proposed model predicts that the critical inclusion size depends upon the sheath thickness, which ranged between 300 and 600 μm for the experimental conditions used in this study

  6. Laser micromachining of sputtered DLC films

    Energy Technology Data Exchange (ETDEWEB)

    Fu, Y.Q. [Department of Engineering, University of Cambridge, Trumpington Street, Cambridge CB2, 1PZ (United Kingdom)]. E-mail: yf229@cam.ac.uk; Luo, J.K. [Department of Engineering, University of Cambridge, Trumpington Street, Cambridge CB2, 1PZ (United Kingdom); Flewitt, A.J. [Department of Engineering, University of Cambridge, Trumpington Street, Cambridge CB2, 1PZ (United Kingdom); Ong, S.E. [School of Mechanical and Aerospace Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore); Zhang, S. [School of Mechanical and Aerospace Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore); Milne, W.I. [Department of Engineering, University of Cambridge, Trumpington Street, Cambridge CB2, 1PZ (United Kingdom)

    2006-04-30

    DLC films with different thicknesses (from 100 nm to 1.9 {mu}m) were deposited using sputtering of graphite target in pure argon atmosphere without substrate heating. Film microstructures (sp{sup 2}/sp{sup 3} ratio) and mechanical properties (modulus, hardness, stress) were characterized as a function of film thickness. A thin layer of aluminum about 60 nm was deposited on the DLC film surface. Laser micromachining of Al/DLC layer was performed to form microcantilever structures, which were released using a reactive ion etching system with SF{sub 6} plasma. Due to the intrinsic stress in DLC films and bimorph Al/DLC structure, the microcantilevers bent up with different curvatures. For DLC film of 100 nm thick, the cantilever even formed microtubes. The relationship between the bimorph beam bending and DLC film properties (such as stress, modulus, etc.) were discussed in details.

  7. Laser micromachining of sputtered DLC films

    International Nuclear Information System (INIS)

    DLC films with different thicknesses (from 100 nm to 1.9 μm) were deposited using sputtering of graphite target in pure argon atmosphere without substrate heating. Film microstructures (sp2/sp3 ratio) and mechanical properties (modulus, hardness, stress) were characterized as a function of film thickness. A thin layer of aluminum about 60 nm was deposited on the DLC film surface. Laser micromachining of Al/DLC layer was performed to form microcantilever structures, which were released using a reactive ion etching system with SF6 plasma. Due to the intrinsic stress in DLC films and bimorph Al/DLC structure, the microcantilevers bent up with different curvatures. For DLC film of 100 nm thick, the cantilever even formed microtubes. The relationship between the bimorph beam bending and DLC film properties (such as stress, modulus, etc.) were discussed in details

  8. Rotation magnet sputtering: Damage-free novel magnetron sputtering using rotating helical magnet with very high target utilization

    International Nuclear Information System (INIS)

    Novel magnetron-sputtering equipment, called rotation magnet sputtering (ROT-MS), was developed to overcome various disadvantages of current magnetron-sputtering equipment. Disadvantages include (1) very low target utilization of less than 20%, (2) difficulty in obtaining uniform deposition on the substrate, and (3) charge-up damages and ion-bombardment-induced damages resulting from very high electron temperature (>3 eV) and that the substrate is set at the plasma excitation region. In ROT-MS, a number of moving high-density plasma loops are excited on the target surface by rotating helical magnets, resulting in very high target utilization with uniform target erosion and uniform deposition on the substrate. This excellent performance can be principally maintained even if equipment size increases for very large-substrate deposition. Because strong horizontal magnetic fields (>0.05 T) are produced within a very limited region just at the target surface, very low electron-temperature plasmas (6, which is well known as a stable, low-work-function bulk-crystal material for electron emissions. The work function of the LaB6 film decreased to 2.8 eV due to enhanced (100)-orientation crystallinity and reduced resistivity realized by adjusting the flux of low-energy bombarding ions impinging on the depositing surface, which work very efficiently, improving the performance of the electron emission devices.

  9. Laser sputter neutral mass spectrometry

    Energy Technology Data Exchange (ETDEWEB)

    King, B.V.; Clarke, M.; Hu, H.; Betz [Newcastle Univ., NSW (Australia). Dept. of Physics

    1993-12-31

    Laser sputter neutral mass spectrometry (LSNMS) is an emerging technique for highly sensitive surface analysis. In this technique a target is bombarded with a pulsed beam of keV ions. The sputtered particles are intercepted by a high intensity pulsed laser beam above the surface and ionised with almost 100% efficiency. The photions may then be mass analysed using a quadrupole or, more commonly, using time of flight (TOF) techniques. In this method photoions are extracted from the ionisation region, accelerated to a known energy E{sub o} and strike a channelplate detector a distance `d` away. The flight time `t` of the photoions is then related to their mass by `d` {radical}m / {radical} 2E{sub o} so measurement of `t` allows mass spectra to be obtained. It is found that LSNMS is an emerging technique of great sensitivity and flexibility, useful for both applied analysis and to investigate basic sputtering processes. 4 refs., 3 figs.

  10. Elementary surface processes during reactive magnetron sputtering of chromium

    International Nuclear Information System (INIS)

    The elementary surface processes occurring on chromium targets exposed to reactive plasmas have been mimicked in beam experiments by using quantified fluxes of Ar ions (400–800 eV) and oxygen atoms and molecules. For this, quartz crystal microbalances were previously coated with Cr thin films by means of high-power pulsed magnetron sputtering. The measured growth and etching rates were fitted by flux balance equations, which provided sputter yields of around 0.05 for the compound phase and a sticking coefficient of O2 of 0.38 on the bare Cr surface. Further fitted parameters were the oxygen implantation efficiency and the density of oxidation sites at the surface. The increase in site density with a factor 4 at early phases of reactive sputtering is identified as a relevant mechanism of Cr oxidation. This ion-enhanced oxygen uptake can be attributed to Cr surface roughening and knock-on implantation of oxygen atoms deeper into the target. This work, besides providing fundamental data to control oxidation state of Cr targets, shows that the extended Berg's model constitutes a robust set of rate equations suitable to describe reactive magnetron sputtering of metals

  11. Teradiode's high brightness semiconductor lasers

    Science.gov (United States)

    Huang, Robin K.; Chann, Bien; Burgess, James; Lochman, Bryan; Zhou, Wang; Cruz, Mike; Cook, Rob; Dugmore, Dan; Shattuck, Jeff; Tayebati, Parviz

    2016-03-01

    TeraDiode is manufacturing multi-kW-class ultra-high brightness fiber-coupled direct diode lasers for industrial applications. A fiber-coupled direct diode laser with a power level of 4,680 W from a 100 μm core diameter, lasers. The fiber-coupled output corresponds to a Beam Parameter Product (BPP) of 3.5 mm-mrad and is the lowest BPP multi-kW-class direct diode laser yet reported. This laser is suitable for industrial materials processing applications, including sheet metal cutting and welding. This 4-kW fiber-coupled direct diode laser has comparable brightness to that of industrial fiber lasers and CO2 lasers, and is over 10x brighter than state-of-the-art direct diode lasers. We have also demonstrated novel high peak power lasers and high brightness Mid-Infrared Lasers.

  12. Influence of ion source configuration and its operation parameters on the target sputtering and implantation process.

    Science.gov (United States)

    Shalnov, K V; Kukhta, V R; Uemura, K; Ito, Y

    2012-06-01

    In the work, investigation of the features and operation regimes of sputter enhanced ion-plasma source are presented. The source is based on the target sputtering with the dense plasma formed in the crossed electric and magnetic fields. It allows operation with noble or reactive gases at low pressure discharge regimes, and, the resulting ion beam is the mixture of ions from the working gas and sputtering target. Any conductive material, such as metals, alloys, or compounds, can be used as the sputtering target. Effectiveness of target sputtering process with the plasma was investigated dependently on the gun geometry, plasma parameters, and the target bias voltage. With the applied accelerating voltage from 0 to 20 kV, the source can be operated in regimes of thin film deposition, ion-beam mixing, and ion implantation. Multi-component ion beam implantation was applied to α-Fe, which leads to the surface hardness increasing from 2 GPa in the initial condition up to 3.5 GPa in case of combined N(2)-C implantation. Projected range of the implanted elements is up to 20 nm with the implantation energy 20 keV that was obtained with XPS depth profiling. PMID:22755619

  13. Rare Earth Doped Gallium Nitride Fabricated by Magnetron Sputtering

    Czech Academy of Sciences Publication Activity Database

    Prajzler, V.; Špirková, J.; Huttel, I.; Hamáček, J.; Peřina, Vratislav; Macková, Anna

    Bratislava : Institut of Physics, Slovak Akademy of Sciences, 2005 - (Hensel, K.; Matějíček, Š.; Skalný, J.; Mason, N.), s. 231-232 ISBN 80-223-2018-8. [Symposium on Applications of Plasma Processes /15./ and EU-Japan Joint Symposium on Plasma Processing /3./. Podbanské (SK), 15.01.2005-20.01.2005] R&D Projects: GA ČR(CZ) GA104/03/0385 Institutional research plan: CEZ:AV0Z10480505 Keywords : gallium nitride * magnetron sputtering Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders

  14. The EUVE bright source list

    Science.gov (United States)

    Stroozas, B.; Mcdonald, K.; Antia, B.; Mcdonald, J.; Wiercigroch, A.

    1993-01-01

    Initial results for bright extreme ultraviolet sources discovered during the EUVE all-sky and deep ecliptic surveys have been published as a Bright Source List (BSL) and released to the astronomical community with a recent NASA research announcement (NRA 93-OSS-02, Appendix F). This paper describes the data processing software, the EUVE survey data set, and the production of the BSL at the Center for EUV Astrophysics. The contents, format, and selection criteria for sources, the data processing strategy, some problems encountered, and a summary of the BSL results are presented.

  15. All things bright and beautiful

    OpenAIRE

    Brown, Chloe

    2012-01-01

    'All Things Bright and Beautiful' was exhibited in 20/21 Visual Arts Centre, Scunthorpe, which is sited in a 'redundant' church. The fundamental question that the exhibition explored concerned the role of 'the animal' within contemporary art and within secular society, which in turn hoped to prompt reflections on our understanding of the place of 'the human' in the world and in nature. If there is no divine order, as posited by the hymn 'All Things Bright and Beautiful', where does this leave...

  16. Deposition and Analysis of Hard and Moderately Ductile MoBC Coatings by pulsed DC Sputtering

    Czech Academy of Sciences Publication Activity Database

    Peřina, Vratislav; Souček, P.; Vašina, P.; Buršíková, V.; Havránek, Vladimír

    Bratislava: Comenius University in Bratislava, 2015, s. 248-252. ISBN 978-80-8147-027-1. [Symposium on Application of Plasma Processes COST TD1208 Workshop on Application of Gaseous Plasma with Liquids: SAPP XX /20./. Tatranská Lomnica (SK), 17.01.2015-22.01.2015] R&D Projects: GA MŠk(CZ) LM2011019 Institutional support: RVO:61389005 Keywords : coatings * DC magnetron sputtering * RBS Subject RIV: BL - Plasma and Gas Discharge Physics

  17. Bright flares in supergiant fast X-ray transients

    Science.gov (United States)

    Shakura, N.; Postnov, K.; Sidoli, L.; Paizis, A.

    2014-08-01

    At steady low-luminosity states, supergiant fast X-ray transients (SFXTs) can be at the stage of quasi-spherical settling accretion on to slowly rotating magnetized neutron stars from the OB-companion winds. At this stage, a hot quasi-static shell is formed above the magnetosphere, the plasma entry rate into magnetosphere is controlled by (inefficient) radiative plasma cooling, and the accretion rate on to the neutron star is suppressed by a factor of ˜30 relative to the Bondi-Hoyle-Littleton value. Changes in the local wind velocity and density due to, e.g. clumps, can only slightly increase the mass accretion rate (a factor of ˜10) bringing the system into the Compton-cooling-dominated regime and led to the production of moderately bright flares (Lx ≲ 1036 erg s-1). To interpret the brightest flares (Lx > 1036 erg s-1) displayed by the SFXTs within the quasi-spherical settling accretion regimes, we propose that a larger increase in the mass accretion rate can be produced by sporadic capture of magnetized stellar wind plasma. At sufficiently low accretion rates, magnetic reconnection can enhance the magnetospheric plasma entry rate, resulting in copious production of X-ray photons, strong Compton cooling and ultimately in unstable accretion of the entire shell. A bright flare develops on the free-fall time-scale in the shell, and the typical energy released in an SFXT bright flare corresponds to the mass of the shell. This view is consistent with the energy released in SFXT bright flares (˜1038-1040 erg), their typical dynamic range (˜100) and with the observed dependence of these characteristics on the average unflaring X-ray luminosity of SFXTs. Thus, the flaring behaviour of SFXTs, as opposed to steady HMXBs, may be primarily related to their low X-ray luminosity allowing sporadic magnetic reconnection to occur during magnetized plasma entry into the magnetosphere.

  18. Particle beam experiments for the analysis of reactive sputtering processes in metals and polymer surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Corbella, Carles; Grosse-Kreul, Simon; Kreiter, Oliver; Arcos, Teresa de los; Benedikt, Jan; Keudell, Achim von [RD Plasmas with Complex Interactions, Ruhr-Universität Bochum, Universitätsstr. 150, 44780 Bochum (Germany)

    2013-10-15

    A beam experiment is presented to study heterogeneous reactions relevant to plasma-surface interactions in reactive sputtering applications. Atom and ion sources are focused onto the sample to expose it to quantified beams of oxygen, nitrogen, hydrogen, noble gas ions, and metal vapor. The heterogeneous surface processes are monitored in situ by means of a quartz crystal microbalance and Fourier transform infrared spectroscopy. Two examples illustrate the capabilities of the particle beam setup: oxidation and nitriding of aluminum as a model of target poisoning during reactive magnetron sputtering, and plasma pre-treatment of polymers (PET, PP)

  19. Particle beam experiments for the analysis of reactive sputtering processes in metals and polymer surfaces.

    Science.gov (United States)

    Corbella, Carles; Grosse-Kreul, Simon; Kreiter, Oliver; de los Arcos, Teresa; Benedikt, Jan; von Keudell, Achim

    2013-10-01

    A beam experiment is presented to study heterogeneous reactions relevant to plasma-surface interactions in reactive sputtering applications. Atom and ion sources are focused onto the sample to expose it to quantified beams of oxygen, nitrogen, hydrogen, noble gas ions, and metal vapor. The heterogeneous surface processes are monitored in situ by means of a quartz crystal microbalance and Fourier transform infrared spectroscopy. Two examples illustrate the capabilities of the particle beam setup: oxidation and nitriding of aluminum as a model of target poisoning during reactive magnetron sputtering, and plasma pre-treatment of polymers (PET, PP). PMID:24182103

  20. Bright Transients discovered by PSST

    Science.gov (United States)

    Smith, K. W.; Wright, D.; Smartt, S. J.; Huber, M.; Chambers, K. C.; Flewelling, H.; Willman, M.; Primak, N.; Schultz, A.; Gibson, B.; Magnier, E.; Waters, C.; Tonry, J.; Wainscoat, R. J.; Denneau, L.; Stalder, B.; Heinze, A.; Sherstyuk, A.; Foley, R. J.; Jha, S. W.; Rest, A.; Scolnic, D.

    2016-04-01

    Seven bright transients have been discovered as part of the Pan-STARRS Survey for Transients (PSST). Information on all objects discovered by the Pan-STARRS Survey for Transients is available at http://star.pst.qub.ac.uk/ps1threepi/ (see Huber et al. ATel #7153).

  1. Bright Transients discovered by PSST

    Science.gov (United States)

    Smith, K. W.; Wright, D.; Smartt, S. J.; Young, D. R.; Huber, M.; Chambers, K. C.; Flewelling, H.; Willman, M.; Primak, N.; Schultz, A.; Gibson, B.; Magnier, E.; Waters, C.; Tonry, J.; Wainscoat, R. J.; Foley, R. J.; Jha, S. W.; Rest, A.; Scolnic, D.

    2016-08-01

    Six bright transients have been discovered as part of the Pan-STARRS Survey for Transients (PSST). Information on all objects discovered by the Pan-STARRS Survey for Transients is available at http://star.pst.qub.ac.uk/ps1threepi/ (see Huber et al. ATel #7153).

  2. Metal plasmas for the fabrication of nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Anders, Andre

    2006-09-21

    A review is provided covering metal plasma production, theenergetic condensation of metal plasmas, and the formation ofnanostructures using such plasmas. Plasma production techniques includepulsed laser ablation, filtered cathodic arcs, and various forms ofionized physical vapor deposition, namely magnetron sputtering withionization of sputtered atoms in radio frequency discharges,self-sputtering, and high power impulse magnetron sputtering. Thediscussion of energetic condensation focuses on the control of kineticenergy by biasing and also includes considerations of the potentialenergy and the processes occurring at subplantation and implantation. Inthe final section on nanostructures, two different approaches arediscussed. In the top-down approach, the primary nanostructures arelithographically produced and metal plasma is used to coat or filltrenches and vias. Additionally, multilayers with nanosize periods(nanolaminates) can be produced. In the bottom-up approach, thermodynamicforces are used to fabricate nanocomposites and nanoporous materials bydecomposition and dealloying.

  3. Are the argon metastables important in high power impulse magnetron sputtering discharges?

    Energy Technology Data Exchange (ETDEWEB)

    Gudmundsson, J. T., E-mail: tumi@hi.is [Department of Space and Plasma Physics, School of Electrical Engineering, KTH Royal Institute of Technology, SE-100 44 Stockholm (Sweden); Science Institute, University of Iceland, Dunhaga 3, IS-107 Reykjavik (Iceland); Lundin, D.; Minea, T. M. [Laboratoire de Physique des Gaz et Plasmas - LPGP, UMR 8578 CNRS, Université Paris-Sud, 91405 Orsay Cedex (France); Stancu, G. D. [CentraleSupélec, Grande Voie des Vignes, 92295 Chatenay-Malabry Cedex (France); CNRS, UPR 288 Laboratoire EM2C, Grande Voie des Vignes, 92295 Chatenay-Malabry Cedex (France); Brenning, N. [Department of Space and Plasma Physics, School of Electrical Engineering, KTH Royal Institute of Technology, SE-100 44 Stockholm (Sweden); Plasma and Coatings Physics Division, IFM-Materials Physics, Linköping University, SE-581 83 Linköping (Sweden)

    2015-11-15

    We use an ionization region model to explore the ionization processes in the high power impulse magnetron sputtering (HiPIMS) discharge in argon with a titanium target. In conventional dc magnetron sputtering (dcMS), stepwise ionization can be an important route for ionization of the argon gas. However, in the HiPIMS discharge stepwise ionization is found to be negligible during the breakdown phase of the HiPIMS pulse and becomes significant (but never dominating) only later in the pulse. For the sputtered species, Penning ionization can be a significant ionization mechanism in the dcMS discharges, while in the HiPIMS discharge Penning ionization is always negligible as compared to electron impact ionization. The main reasons for these differences are a higher plasma density in the HiPIMS discharge, and a higher electron temperature. Furthermore, we explore the ionization fraction and the ionized flux fraction of the sputtered vapor and compare with recent experimental work.

  4. Surface charging of thick porous water ice layers relevant for ion sputtering experiments

    Science.gov (United States)

    Galli, A.; Vorburger, A.; Pommerol, A.; Wurz, P.; Jost, B.; Poch, O.; Brouet, Y.; Tulej, M.; Thomas, N.

    2016-07-01

    We use a laboratory facility to study the sputtering properties of centimeter-thick porous water ice subjected to the bombardment of ions and electrons to better understand the formation of exospheres of the icy moons of Jupiter. Our ice samples are as similar as possible to the expected moon surfaces but surface charging of the samples during ion irradiation may distort the experimental results. We therefore monitor the time scales for charging and discharging of the samples when subjected to a beam of ions. These experiments allow us to derive an electric conductivity of deep porous ice layers. The results imply that electron irradiation and sputtering play a non-negligible role for certain plasma conditions at the icy moons of Jupiter. The observed ion sputtering yields from our ice samples are similar to previous experiments where compact ice films were sputtered off a micro-balance.

  5. Are the argon metastables important in high power impulse magnetron sputtering discharges?

    International Nuclear Information System (INIS)

    We use an ionization region model to explore the ionization processes in the high power impulse magnetron sputtering (HiPIMS) discharge in argon with a titanium target. In conventional dc magnetron sputtering (dcMS), stepwise ionization can be an important route for ionization of the argon gas. However, in the HiPIMS discharge stepwise ionization is found to be negligible during the breakdown phase of the HiPIMS pulse and becomes significant (but never dominating) only later in the pulse. For the sputtered species, Penning ionization can be a significant ionization mechanism in the dcMS discharges, while in the HiPIMS discharge Penning ionization is always negligible as compared to electron impact ionization. The main reasons for these differences are a higher plasma density in the HiPIMS discharge, and a higher electron temperature. Furthermore, we explore the ionization fraction and the ionized flux fraction of the sputtered vapor and compare with recent experimental work

  6. High rate sputtering of corrosion-resistant alloys

    International Nuclear Information System (INIS)

    High corrosion-resitant films of amorphous Fe sub(80-X)Cr sub(X)P sub(13)C sub(7), Fe45Cr30Mo5P13C7, Cr70C30, Cr75B25 and Ti75B25 were deposited by dc-triode sputtering on water-cooled copper substrate. X-ray diffractometry showed a few diffraction patterns that characterize the amorphous structure for deposited films. High sputtering rate of about 0.1 μm/min was achieved by applying high ion current densities to the sputtering target under 10-2 Torr of Ar gas. The high dense Ar plasma ions were produced using a plasma generator. The microhardness of amorphous Cr70C30, Cr75B25 and Ti75B25 were 1288, 1168 and 1081, respectively. The films, which contain high corrosion resitant alloying elements such as Cr and Ti, show extremely high corrosion resistance, particularly pitting corrosion resistance in IN HCI. The high corrosion resistance of these films is attributable to the enrichment of Cr and Ti in the passive films. (author)

  7. Formation and stability of sputtered clusters

    International Nuclear Information System (INIS)

    Current theory for the formation of sputtered clusters states that either atoms are sputtered individually and aggregate after having left the surface or they are sputtered as complete clusters. There is no totally sharp boundary between the two interpretations, but experimental evidence is mainly thought to favour the latter model. Both theories demand a criterion for the stability of the clusters. In computer simulations of sputtering, the idea has been to use the same interaction potential as in the lattice computations to judge the stability. More qualitatively, simple geometrical shapes have also been looked for. It is found here, that evidence for 'magic numbers' and electron parity effects in clusters have existed in the sputtering literature for a long time, making more sophisticated stability criteria necessary. The breakdown of originally sputtered metastable clusters into stable clusters gives strong support to the 'sputtered as clusters' hypothesis. (author)

  8. Sputtering technology in solid film lubrication

    Science.gov (United States)

    Spalvins, T.

    1978-01-01

    Potential and present sputtering technology is discussed as it applies to the deposition of solid film lubricants particularly MoS2, WS2, and PTFE. Since the sputtered films are very thin, the selection of the sputtering parameters and substrate condition is very critical as reflected by the lubricating properties. It was shown with sputtered MoS2 films that the lubricating characteristics are directly affected by the selected sputtering parameters (power density, pressure, sputter etching, dc-biasing, etc.) and the substrate temperature, chemistry, topography and the environmental conditions during the friction tests. Electron microscopy and other surface sensitive analytical techniques illustrate the resulting changes in sputtered MoS2 film morphology and chemistry which directly influence the film adherence and frictional properties.

  9. 3D-modeling of Mercury's solar wind sputtered surface-exosphere environment

    Science.gov (United States)

    Pfleger, M.; Lichtenegger, H. I. M.; Wurz, P.; Lammer, H.; Kallio, E.; Alho, M.; Mura, A.; McKenna-Lawlor, S.; Martín-Fernández, J. A.

    2015-09-01

    The efficiency of sputtered refractory elements by H+ and He++ solar wind ions from Mercury's surface and their contribution to the exosphere are studied for various solar wind conditions. A 3D solar wind-planetary interaction hybrid model is used for the evaluation of precipitation maps of the sputter agents on Mercury's surface. By assuming a global mineralogical surface composition, the related sputter yields are calculated by means of the 2013 SRIM code and are coupled with a 3D exosphere model. Because of Mercury's magnetic field, for quiet and nominal solar wind conditions the plasma can only precipitate around the polar areas, while for extreme solar events (fast solar wind, coronal mass ejections, interplanetary magnetic clouds) the solar wind plasma has access to the entire dayside. In that case the release of particles form the planet's surface can result in an exosphere density increase of more than one order of magnitude. The corresponding escape rates are also about an order of magnitude higher. Moreover, the amount of He++ ions in the precipitating solar plasma flow enhances also the release of sputtered elements from the surface in the exosphere. A comparison of our model results with MESSENGER observations of sputtered Mg and Ca elements in the exosphere shows a reasonable quantitative agreement.

  10. Helmholtz bright and boundary solitons

    International Nuclear Information System (INIS)

    We report, for the first time, exact analytical boundary solitons of a generalized cubic-quintic nonlinear Helmholtz (NLH) equation. These solutions have a linked-plateau topology that is distinct from conventional dark soliton solutions; their amplitude and intensity distributions are spatially delocalized and connect regions of finite and zero wave-field disturbances (suggesting also the classification as 'edge solitons'). Extensive numerical simulations compare the stability properties of recently derived Helmholtz bright solitons, for this type of polynomial nonlinearity, to those of the new boundary solitons. The latter are found to possess a remarkable stability characteristic, exhibiting robustness against perturbations that would otherwise lead to the destabilizing of their bright-soliton counterparts

  11. Helmholtz bright and boundary solitons

    Energy Technology Data Exchange (ETDEWEB)

    Christian, J M [Joule Physics Laboratory, School of Computing, Science and Engineering, Institute for Materials Research, University of Salford, Salford M5 4WT (United Kingdom); McDonald, G S [Joule Physics Laboratory, School of Computing, Science and Engineering, Institute for Materials Research, University of Salford, Salford M5 4WT (United Kingdom); Chamorro-Posada, P [Departmento de TeorIa de la Senal y Comunicaciones e IngenierIa Telematica, Universidad de Valladolid, ETSI Telecomunicacion, Campus Miguel Delibes s/n, 47011 Valladolid (Spain)

    2007-02-16

    We report, for the first time, exact analytical boundary solitons of a generalized cubic-quintic nonlinear Helmholtz (NLH) equation. These solutions have a linked-plateau topology that is distinct from conventional dark soliton solutions; their amplitude and intensity distributions are spatially delocalized and connect regions of finite and zero wave-field disturbances (suggesting also the classification as 'edge solitons'). Extensive numerical simulations compare the stability properties of recently derived Helmholtz bright solitons, for this type of polynomial nonlinearity, to those of the new boundary solitons. The latter are found to possess a remarkable stability characteristic, exhibiting robustness against perturbations that would otherwise lead to the destabilizing of their bright-soliton counterparts.

  12. Bright solitons from defocusing nonlinearities

    OpenAIRE

    Borovkova, Olga V.; Kartashov, Yaroslav; Torner Sabata, Lluís; Malomed, Boris A.

    2011-01-01

    We report that defocusing cubic media with spatially inhomogeneous nonlinearity, whose strength increases rapidly enough toward the periphery, can support stable bright localized modes. Such nonlinearity landscapes give rise to a variety of stable solitons in all three dimensions, including one-dimensional fundamental and multihump states, two-dimensional vortex solitons with arbitrarily high topological charges, and fundamental solitons in three dimensions. Solitons maintain their coherence ...

  13. Semi-empirical formulas for sputtering yield

    International Nuclear Information System (INIS)

    When charged particles, electrons, light and so on are irradiated on solid surfaces, the materials are lost from the surfaces, and this phenomenon is called sputtering. In order to understand sputtering phenomenon, the bond energy of atoms on surfaces, the energy given to the vicinity of surfaces and the process of converting the given energy to the energy for releasing atoms must be known. The theories of sputtering and the semi-empirical formulas for evaluating the dependence of sputtering yield on incident energy are explained. The mechanisms of sputtering are that due to collision cascade in the case of heavy ion incidence and that due to surface atom recoil in the case of light ion incidence. The formulas for the sputtering yield of low energy heavy ion sputtering, high energy light ion sputtering and the general case between these extreme cases, and the Matsunami formula are shown. At the stage of the publication of Atomic Data and Nuclear Data Tables in 1984, the data up to 1983 were collected, and about 30 papers published thereafter were added. The experimental data for low Z materials, for example Be, B and C and light ion sputtering data were reported. The combination of ions and target atoms in the collected sputtering data is shown. The new semi-empirical formula by slightly adjusting the Matsunami formula was decided. (K.I.)

  14. In-situ sputtering apparatus

    Energy Technology Data Exchange (ETDEWEB)

    Erickson, Mark R.; Poole, Henry J.; Custer, III, Arthur W.; Hershcovitch, Ady

    2015-06-09

    A sputtering apparatus that includes at least a target presented as an inner surface of a confinement structure, the inner surface of the confinement structure is preferably an internal wall of a circular tube. A cathode is disposed adjacent the internal wall of the circular tube. The cathode preferably provides a hollow core, within which a magnetron is disposed. Preferably, an actuator is attached to the magnetron, wherein a position of the magnetron within the hollow core is altered upon activation of the actuator. Additionally, a carriage supporting the cathode and communicating with the target is preferably provided, and a cable bundle interacting with the cathode and linked to a cable bundle take up mechanism provided power and coolant to the cathode, magnetron, actuator and an anode of the sputtering apparatus.

  15. Deposition of nanoscale multilayer CrN/NbN physical vapor deposition coatings by high power impulse magnetron sputtering

    OpenAIRE

    Purandare, Y. P.; Ehiasarian, A.P.; Hovsepian, P. E.

    2008-01-01

    Nanoscale multilayer CrN/NbN physical vapor deposition (PVD) coatings are gaining reputation for their high corrosion and wear resistance. However, the CrN/NbN films deposited by ABS(TM) (are bond sputtering) technology have some limitations such as macrodroplets, porosity, and less dense structures. The novel HIPIMS (high power impulse magnetron sputtering) technique produces macroparticle-free, highly ionized metal plasma, which brings advantages in both surface pretreatment and coating dep...

  16. Calculation of the density of sputtered metal in the vicinity of the TEXTOR reference limiter

    International Nuclear Information System (INIS)

    The density of the metal atoms from wall sputtering in the marginal plasma layer of Textor is measured by laser-induced fluorescence spectroscopy. Measurements in the vicinity of the semispherical reference limiter showed a decrease of the metal atom density in radial direction towards the core plasma and a maximum metal atom density in toroidal direction. The intensity and location of the peak are determined by the position of the reference limiter relative to the core plasma. In the direct vicinity of the core plasma, where sputtering of the limiter surface is mainly caused by the ions of the marginal plasma layer, the peak is very high and shifted towards the ion side with reference to the flux direction. The author investigates the effects of the geometry of the sputtered reference limiter and the characteristic length of the plasma density profile in the marginal layer on the metal atom density distribution. The theory is formulated initially for exponential plasma density profiles and constant electron temperature. (orig./GG)

  17. Note: Development of a volume-limited dot target for a high brightness extreme ultraviolet microplasma source

    International Nuclear Information System (INIS)

    We report on production of volume-limited dot targets based on electron beam lithographic and sputtering technologies for use in efficient high brightness extreme ultraviolet microplasma sources. We successfully produced cylindrical tin (Sn) targets with diameters of 10, 15, and 20 μm and a height of 150 nm. The calculated spectrum around 13.5 nm was in good agreement with that obtained experimentally

  18. Optical emission spectroscopy of High Power Impulse Magnetron Sputtering (HiPIMS) of CIGS thin films

    Czech Academy of Sciences Publication Activity Database

    Olejníček, Jiří; Hubička, Zdeněk; Kohout, Michal; Kšírová, Petra; Brunclíková, Michaela; Kment, Štěpán; Čada, Martin; Darveau, S.A.; Exstrom, C.L.

    New York: IEEE, 2014, s. 1666-1669. ISBN 9781479943982. [IEEE Photovoltaic Specialist Conference (PVSC 2014) /40./. Denver (US), 08.06.2014-13.06.2014] R&D Projects: GA MŠk LH12045 Institutional support: RVO:68378271 Keywords : CIGS * HiPIMS * emission spectroscopy * magnetron sputtering * thin films Subject RIV: BL - Plasma and Gas Discharge Physics

  19. Multilayered Al/CuO thermite formation by reactive magnetron sputtering: Nano versus micro

    OpenAIRE

    Petrantoni, Marine; Rossi, Carole; Salvagnac, Ludovic; Conédéra, Véronique; Estève, Alain; Tenailleau, Christophe; Alphonse, Pierre; Chabal, Yves J.

    2010-01-01

    Multilayered Al/CuO thermite was deposited by a dc reactive magnetron sputtering method. Pure Al and Cu targets were used in argon–oxygen gas mixture plasma and with an oxygen partial pressure of 0.13 Pa. The process was designed to produce low stress (

  20. Increase of Saturation Magnetization of Ba Ferrite Films Deposited by Adding Xe Into Sputtering Gas Mixture

    OpenAIRE

    Noma, K.; Matsushita, N.; Nakagawa, S.; Naoe, M.

    1997-01-01

    Ba ferrite thin films with well c-axis orientation were deposited by means of three sputtering systems and the relationships among their microstructure, magnetic characteristics and plasma parameters were discussed. It was clearly confirmed that the suppression of heavy bombardment of energetic particles to the surface of the growing film was the most important for attaining the excellent crystallographic and magnetic characteristics.

  1. Deposition of functional coatings in the microwave waveguide by the magnetrons sputtering

    Czech Academy of Sciences Publication Activity Database

    Bulíř, Jiří; Novotný, Michal; Pokorný, Petr; Lančok, Ján; Musil, Jindřich; Rouček, V.; Veselý, J.; Dražan, L.

    Garmisch-Partenkirchen: PSE, 2014 - (Bräuer, G.). OR 1207 [International Conference on Plasma Surface Engineering /14./ PSE 2014. 15.09.2014-19.09.2014, Garmisch-Partenkirchen] R&D Projects: GA TA ČR(CZ) TA03010490 Institutional support: RVO:68378271 Keywords : magnetron sputtering * microwave waveguide * inner walls Subject RIV: BM - Solid Matter Physics ; Magnetism

  2. Characterization of off-axis single target RF magnetron co-sputtered iron doped tin

    Czech Academy of Sciences Publication Activity Database

    Kormunda, M.; Pavlík, J.; Macková, Anna; Malinský, Petr

    2010-01-01

    Roč. 205, - (2010), S120-S124. ISSN 0257-8972 R&D Projects: GA MŠk(CZ) LC06041 Institutional research plan: CEZ:AV0Z10480505 Keywords : Magnetron co-sputtering * Off-axis deposition * Amorphous stannic oxide Subject RIV: BL - Plasma and Gas Discharge Physics Impact factor: 2.135, year: 2010

  3. High power impulse magnetron sputtering of CIGS thin films for high efficiency thin film solar cells

    Czech Academy of Sciences Publication Activity Database

    Olejníček, Jiří; Hubička, Zdeněk; Kohout, Michal; Kšírová, Petra; Kment, Štěpán; Brunclíková, Michaela; Čada, Martin; Darveau, S.A.; Exstrom, C.L.

    2014-01-01

    Roč. 1, č. 3 (2014), s. 135-137. ISSN 2336-2626 R&D Projects: GA MŠk LH12045 Institutional support: RVO:68378271 Keywords : CIGS * HiPIMS * emission spectroscopy * thin films * magnetron sputtering Subject RIV: BL - Plasma and Gas Discharge Physics http://fyzika.feld.cvut.cz/misc/ppt/articles/2014/olejnicek.pdf

  4. Laser fluorescence spectroscopy of sputtered uranium atoms

    International Nuclear Information System (INIS)

    Laser induced fluorescence (LIF) spectroscopy was used to study the sputtering of 99.8% 238U metal foil when bombarded by normally incident 500 to 3000 eV Ne+, Ar+, Kr+, and O2+. A three-level atom model of the LIF processes is developed to interpret the observed fluorescent emission from the sputtered species. The model shows that close attention must be paid to the conditions under which the experiment is carried out as well as to the details of the collision cascade theory of sputtering. Rigorous analysis shows that when properly applied, LIF can be used to investigate the predictions of sputtering theory as regards energy distributions of sputtered particles and for the determination of sputtering yields. The possibility that thermal emission may occur during sputtering can also be tested using the proposed model. It is shown that the velocity distribution (either the number density or flux density distribution, depending upon the experimental conditions) of the sputtered particles can be determined using the LIF technique and that this information can be used to obtain a description of the basic sputtering mechanisms. These matters are discussed using the U-atom fluorescence measurements as a basis. The relative sputtering yields for various incident ions on uranium were also measured for the first time using the LIF technique. A surprisingly high fraction of the sputtered uranium atoms were found to occupy the low lying metastable energy levels of U(I). The population of the sputtered metastable atoms were found approximately to obey a Boltzman distribution with an effective temperature of 920 +- 1000K. 41 references

  5. Account of cascade formation depth during sputtering

    International Nuclear Information System (INIS)

    Cascade theory of sputtering is considered. It is suggested to take account of the fact that cascade in a solid forms at a certain depth. This results in decreasing a sputtered particle yield and in changing the form of angular distributions. Angular distributions of sputtered particles were calculated for plane and spherical potential barriers. It was demonstrated that account of cascade formation depth enabled to describe the experiment much better as compared to standard cascade theories. 9 refs.; 13 figs.; 2 tabs

  6. Scintillation camera brightness calibration apparatus

    International Nuclear Information System (INIS)

    Circuitry is described for calibrating the brightness of a cathode ray tube display and recording apparatus comprising: 1) intensity control means for adjusting the intensity of the cathode ray tube beam; 2) light sensitive means disposed to receive light emitted from the cathode ray tube and generating a first electrical signal having a magnitude dependent upon the intensity of the emitted light; 3) reference signal generating means for generating a second electrical signal of predetermined magnitude; and 4) electrical signal comparison means coupled to the light sensitive means and the reference signal generating means for comparing the magnitude of the first and second electrical signals. (author)

  7. High-brightness electron injectors

    International Nuclear Information System (INIS)

    Free-electron laser (FEL) oscillators and synchrotron light sources require pulse trains of high peak brightness and, in some applications, high-average power. Recent developments in the technology of photoemissive and thermionic electron sources in rf cavities for electron-linac injector applications offer promising advances over conventional electron injectors. Reduced emittance growth in high peak-current electron injectors may be achieved by using high field strengths and by linearizing the radial component of the cavity electric field at the expense of lower shunt impedance

  8. High brightness beams and applications

    International Nuclear Information System (INIS)

    This paper describes the present research on attaining intense bright electron beams. Thermionic systems are briefly covered. Recent and past results from the photoinjector programs are given. The performance advantages and difficulties presently faced by researchers using photoinjectors is discussed. The progress that has been made in photocathode materials, both in lifetime and quantum efficiency, is covered. Finally, a discussion of emittance measurements of photoinjector systems and how the measurement is complicated by the non-thermal nature of the electron beam is presented

  9. In-situ observation of sputtered particles for carbon implanted tungsten during energetic isotope ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Oya, Y.; Sato, M.; Uchimura, H.; Okuno, K. [Graduate School of Science, Shizuoka University, Shizuoka (Japan); Ashikawa, N.; Sagara, A. [National Institute for Fusion Science, Gifu (Japan); Yoshida, N. [Institute for Applied Mechanics, Kyushu University, Kasuga (Japan); Hatano, Y. [Hydrogen Isotope Research Center, University of Toyama, Toyama (Japan)

    2015-03-15

    Tungsten is a candidate for plasma facing materials in future fusion reactors. During DT plasma operations, carbon as an impurity will bombard tungsten, leading to the formation of tungsten-carbon (WC) layer and affecting tritium recycling behavior. The effect of carbon implantation for the dynamic recycling of deuterium, which demonstrates tritium recycling, including retention and sputtering, has been investigated using in-situ sputtered particle measurements. The C{sup +} implanted W, WC and HOPG were prepared and dynamic sputtered particles were measured during H{sub 2}{sup +} irradiation. It has been found that the major hydrocarbon species for C{sup +} implanted tungsten is CH{sub 3}, while for WC and HOPG (Highly Oriented Pyrolytic Graphite) it is CH{sub 4}. The chemical state of hydrocarbon is controlled by the H concentration in a W-C mixed layer. The amount of C-H bond and the retention of H trapped by carbon atom should control the chemical form of hydrocarbon sputtered by H{sub 2}{sup +} irradiation and the desorption of CH{sub 3} and CH{sub 2} are due to chemical sputtering, although that for CH is physical sputtering. The activation energy for CH{sub 3} desorption has been estimated to be 0.4 eV, corresponding to the trapping process of hydrogen by carbon through the diffusion in W. It is concluded that the chemical states of hydrocarbon sputtered by H{sub 2}{sup +} irradiation for W is determined by the amount of C-H bond on the W surface. (authors)

  10. Disorder-free sputtering method on graphene

    Directory of Open Access Journals (Sweden)

    Xue Peng Qiu

    2012-09-01

    Full Text Available Deposition of various materials onto graphene without causing any disorder is highly desirable for graphene applications. Especially, sputtering is a versatile technique to deposit various metals and insulators for spintronics, and indium tin oxide to make transparent devices. However, the sputtering process causes damage to graphene because of high energy sputtered atoms. By flipping the substrate and using a high Ar pressure, we demonstrate that the level of damage to graphene can be reduced or eliminated in dc, rf, and reactive sputtering processes.

  11. Brightness limitations in multi-kiloampere electron beam sources

    International Nuclear Information System (INIS)

    Heuristic relationships such as the Lawson-Penner criterion, used to scale Free Electron Laser (FEL) amplifier gain and efficiency over orders of magnitude in beam current and brightness, have no fundamental basis. The brightness of a given source is set by practical design choices such as peak voltage, cathode type, gun electrode geometry, and focusing field topology. The design of low emittance, high current electron guns has received considerable attention at Livermore over the past few years. The measured brightnesses of the Experimental Test Accelerator (ETA) and Advanced Test Accelerator (ATA) guns are less than predicted with the EBQ gun design code; this discrepancy is due to plasma effects from the present cold, plasma cathode in the code. The EBQ code is well suited to exploring the current limits of gridless relativistic Pierce columns with moderate current density (2) at the cathode. As EBQ uses a steady-state calculation it is not amenable for study of transient phenomena at the beam head. For this purpose, a Darwin approximation code, DPC, has been written. The main component in our experimental cathode development effort is a readily modified electron gun that will allow us to test many candidate cathode materials, types and electrode geometries at field stresses up to 1 MV/cm. 6 references, 6 figures

  12. RF sputtering: A viable tool for MEMS fabrication

    Indian Academy of Sciences (India)

    Sudhir Chandra; Vivekanand Bhatt; Ravindra Singh

    2009-08-01

    Fabrication of Micro-Electro-Mechanical-Systems (MEMS) requires deposition of films such as SiO2, Si34, ZnO, polysilicon, phosphosilicate glass (PSG), Al, Cr-Au, Pt, etc. for use as structural, sacrificial, piezoelectric and conducting material. Deposition of these materials at low temperature is desirable for fabricating sensors/actuators on temperature-sensitive substrates and also for integrating MEMS structures on silicon in post-CMOS processing procedures. Plasma enhanced chemical vapour deposition (PECVD) and sputtering are amongst potential techniques for preparing films for MEMS fabrication at comparatively low temperatures. The sputtering technique has an added advantage that the process is carried out in an inert ambient (argon) and chemically sensitive substrate/sacrificial layers can be used in realization of MEMS. Furthermore, the same system can be used for depositing dielectric, piezoelectric and conducting materials as per requirement in the fabrication sequence. This enables rapid low-cost prototyping of MEMS with minimum fabrication facilities. In the present work, we report preparation, characterization and application of RF sputtered SiO2, Si34 and ZnO films for MEMS fabrication. The effect of RF power, sputtering pressure and target-to-substrate spacing was investigated on the structural and other properties of the films. The residual stress in the films was obtained using wafer curvature measurement technique. The deposition parameters are optimized to obtain low stress films of SiO2 and Si34. The self-heating of the substrate during deposition was advantageously exploited to obtain highly -axis oriented films of ZnO without any external heating. A variety of MEMS structures such as cantilever beams, micro-bridges, diaphragms, etc. are demonstrated using bulk, surface and surface-bulk micromachining techniques.

  13. High Brightness Neutron Source for Radiography

    Energy Technology Data Exchange (ETDEWEB)

    Cremer, J. T.; Piestrup, Melvin, A.; Gary, Charles, K.; Harris, Jack, L. Williams, David, J.; Jones, Glenn, E.; Vainionpaa, J. , H.; Fuller, Michael, J.; Rothbart, George, H.; Kwan, J., W.; Ludewigt, B., A.; Gough, R.., A..; Reijonen, Jani; Leung, Ka-Ngo

    2008-12-08

    This research and development program was designed to improve nondestructive evaluation of large mechanical objects by providing both fast and thermal neutron sources for radiography. Neutron radiography permits inspection inside objects that x-rays cannot penetrate and permits imaging of corrosion and cracks in low-density materials. Discovering of fatigue cracks and corrosion in piping without the necessity of insulation removal is possible. Neutron radiography sources can provide for the nondestructive testing interests of commercial and military aircraft, public utilities and petrochemical organizations. Three neutron prototype neutron generators were designed and fabricated based on original research done at the Lawrence Berkeley National Laboratory (LBNL). The research and development of these generators was successfully continued by LBNL and Adelphi Technology Inc. under this STTR. The original design goals of high neutron yield and generator robustness have been achieved, using new technology developed under this grant. In one prototype generator, the fast neutron yield and brightness was roughly 10 times larger than previously marketed neutron generators using the same deuterium-deuterium reaction. In another generator, we integrate a moderator with a fast neutron source, resulting in a high brightness thermal neutron generator. The moderator acts as both conventional moderator and mechanical and electrical support structure for the generator and effectively mimics a nuclear reactor. In addition to the new prototype generators, an entirely new plasma ion source for neutron production was developed. First developed by LBNL, this source uses a spiral antenna to more efficiently couple the RF radiation into the plasma, reducing the required gas pressure so that the generator head can be completely sealed, permitting the possible use of tritium gas. This also permits the generator to use the deuterium-tritium reaction to produce 14-MeV neutrons with increases

  14. SnS thin-films by RF sputtering at room temperature

    International Nuclear Information System (INIS)

    Tin monosulfide (SnS) is of interest as a potential solar cell absorber material. We present a preliminary investigation of the effects of sputtering conditions on SnS thin-film structural, optical, and electronic properties. Films were RF sputtered from an SnS target using an argon plasma. Resistivity, stoichiometry, phase, grain size and shape, bandgap, and optical absorption coefficient can be varied by modifying argon pressure for a fixed deposition time. Most films have an indirect bandgap in the range of 1.08-1.18 eV. XRD patterns confirmed the films as mostly crystalline, and grain morphology was examined using profile and surface SEM images.

  15. DC Magnetron sputtering of Y-Ba-Cu-O thin films

    International Nuclear Information System (INIS)

    I have been studying dc magnetron sputtering of thin film YBa2Cu3O6+x, one of the recently discovered high- temperatures superconductors. In the introduction a brief review of the subjects sputtering and superconductivity is given. Since partial pressure measurements, especially for oxygen, have been important in the work I include a short description of the operating principles of mass spectroscopy. Experimental results in addition to what is given in the papers concerning plasma are presented in an appendix at the end of the introduction. (au)

  16. An examination of the reactive sputtering of silicon nitride on to gallium arsenide

    International Nuclear Information System (INIS)

    The deposition of silicon nitride thin films by the reactive sputtering of elemental silicon in a nitrogen/argon plasma has been investigated. The composition of the films has been examined using infra-red reflectance, X-ray photoelectron and Auger electron spectroscopies and spark source mass spectrometry. Oxygen has been found to be a major contaminant in these sputter deposited films, the oxygen concentration depending on the ambient gas pressure. The use of the silicon oxy-nitride films as annealing encapsulants for the activation of silicon ion implanted semi-insulating gallium arsenide has also been investigated. (author)

  17. Comparative study of ITO and TiN fabricated by low-temperature RF biased sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Simon, Daniel K., E-mail: daniel.simon@namlab.com; Schenk, Tony; Dirnstorfer, Ingo; Fengler, Franz P. G.; Jordan, Paul M.; Krause, Andreas [NaMLab gGmbH, Nöthnitzerstr. 64, 01187 Dresden (Germany); Tröger, David [Westsächsische Hochschule Zwickau, Fachgruppe Nanotechnologie, Dr.-Friedrichs-Ring 2a, 08056 Zwickau (Germany); Mikolajick, Thomas [NaMLab gGmbH, Nöthnitzerstr. 64, 01187 Dresden, Germany and TU Dresden, Institut für Halbleiter- und Mikrosystemtechnik (IHM), 01062 Dresden (Germany)

    2016-03-15

    Radio frequency (RF) biasing induced by a second plasma source at the substrate is applied to low-temperature sputtering processes for indium tin oxide (ITO) and titanium nitride (TiN) thin films. Investigations on crystal structure and surface morphology show that RF-biased substrate plasma processes result in a changed growth regime with different grain sizes and orientations than those produced by processes without a substrate bias. The influence of the RF bias is shown comparatively for reactive RF-sputtered ITO and reactive direct-current-sputtered TiN. The ITO layers exhibit an improved electrical resistivity of 0.5 mΩ cm and an optical absorption coefficient of 0.5 × 10{sup 4 }cm{sup −1} without substrate heating. Room-temperature sputtered TiN layers are deposited that possess a resistivity (0.1 mΩ cm) of 3 orders of magnitude lower than, and a density (5.4 g/cm{sup 3}) up to 45% greater than, those obtained from layers grown using the standard process without a substrate plasma.

  18. Comparative study of ITO and TiN fabricated by low-temperature RF biased sputtering

    International Nuclear Information System (INIS)

    Radio frequency (RF) biasing induced by a second plasma source at the substrate is applied to low-temperature sputtering processes for indium tin oxide (ITO) and titanium nitride (TiN) thin films. Investigations on crystal structure and surface morphology show that RF-biased substrate plasma processes result in a changed growth regime with different grain sizes and orientations than those produced by processes without a substrate bias. The influence of the RF bias is shown comparatively for reactive RF-sputtered ITO and reactive direct-current-sputtered TiN. The ITO layers exhibit an improved electrical resistivity of 0.5 mΩ cm and an optical absorption coefficient of 0.5 × 104 cm−1 without substrate heating. Room-temperature sputtered TiN layers are deposited that possess a resistivity (0.1 mΩ cm) of 3 orders of magnitude lower than, and a density (5.4 g/cm3) up to 45% greater than, those obtained from layers grown using the standard process without a substrate plasma

  19. How Bright Can Supernovae Get?

    Science.gov (United States)

    Kohler, Susanna

    2016-04-01

    Supernovae enormous explosions associated with the end of a stars life come in a variety of types with different origins. A new study has examined how the brightest supernovae in the Universe are produced, and what limits might be set on their brightness.Ultra-Luminous ObservationsRecent observations have revealed many ultra-luminous supernovae, which haveenergies that challenge our abilities to explain them usingcurrent supernova models. An especially extreme example is the 2015 discovery of the supernova ASASSN-15lh, which shone with a peak luminosity of ~2*1045 erg/s, nearly a trillion times brighter than the Sun. ASASSN-15lh radiated a whopping ~2*1052 erg in the first four months after its detection.How could a supernova that bright be produced? To explore the answer to that question, Tuguldur Sukhbold and Stan Woosley at University of California, Santa Cruz, have examined the different sources that could produce supernovae and calculated upper limits on the potential luminosities ofeach of these supernova varieties.Explosive ModelsSukhbold and Woosley explore multiple different models for core-collapse supernova explosions, including:Prompt explosionA stars core collapses and immediately explodes.Pair instabilityElectron/positron pair production at a massive stars center leads to core collapse. For high masses, radioactivity can contribute to delayed energy output.Colliding shellsPreviously expelled shells of material around a star collide after the initial explosion, providing additional energy release.MagnetarThe collapsing star forms a magnetar a rapidly rotating neutron star with an incredibly strong magnetic field at its core, which then dumps energy into the supernova ejecta, further brightening the explosion.They then apply these models to different types of stars.Setting the LimitThe authors show that the light curve of ASASSN-15lh (plotted in orange) can be described by a model (black curve) in which a magnetar with an initial spin period of 0.7 ms

  20. VERITAS Observations under Bright Moonlight

    CERN Document Server

    ,

    2015-01-01

    The presence of moonlight is usually a limiting factor for imaging atmospheric Cherenkov telescopes due to the high sensitivity of the camera photomultiplier tubes (PMTs). In their standard configuration, the extra noise limits the sensitivity of the experiment to gamma-ray signals and the higher PMT currents also accelerates PMT aging. Since fall 2012, observations have been carried out with VERITAS under bright moonlight (Moon illumination $> 35\\%$), in two observing modes, by reducing the voltage applied to the PMTs and with UV bandpass filters, which allow observations up to $\\sim80\\%$ Moon illumination resulting in $29\\%$ more observing time over the course of the year. In this presentation, we provide details of these new observing modes and their performance relative to the standard VERITAS observations.

  1. [Bright light therapy for elderly].

    Science.gov (United States)

    Okawa, Masako

    2015-06-01

    Bright light therapy (BLT) holds considerable promise for sleep problems in the elderly. BLT for community-dwelling patients with Alzheimer's disease showed significant improvement in sleep parameters. In the institutional setting, BLT was effective in reducing daytime nap duration. Morning BLT was found to advance the peak circadian rhythm and increase activity level in daytime and melatonin level at night. Light therapy could be used in combination with other nonpharmacological methods such as social activities, outside walking, physical exercises, which showed greater effects than independent BLT on sleep and cognitive function. BLT treatment strategy was proposed in the present paper. We should pay more attentions to BLT in community setting for mental and physical well-being. PMID:26065132

  2. Graphene: the ultimately thin sputtering shield

    Science.gov (United States)

    Herbig, Charlotte; Michely, Thomas

    2016-06-01

    Scanning tunneling microscopy methods are applied to investigate the potential of monolayer graphene as a sputtering shield for the underlying metal substrate. To visualize the effect, a bare and a graphene protected Ir(111) surface are irradiated with 500 eV Xe+, as well as 200 eV Xe+ and Ar+ ions, all at 1000 K. By quantitatively evaluating the sputtered material from the surface vacancy island area, we find a drastic decrease in metal sputtering for the graphene protected surface. It is demonstrated that efficient sputter protection relies on self-repair of the ion damage in graphene, which takes place efficiently in the temperature range of chemical vapor deposition growth. Based on the generality of the underlying principles of ion damage, graphene self-repair, and graphene growth, we speculate that efficient sputter protection is possible for a broad range of metals and alloys.

  3. The influence of target oxygen on the YBa2Cu3O6+δ direct-current magnetron sputtering process

    International Nuclear Information System (INIS)

    The oxygen partial pressure and the target potential have been monitored under a range of process conditions during single target direct-current (dc) magnetron sputtering of Y--Ba--Cu--O. The introduced sputtering gas consisted in most instances of pure argon and hence the oxygen present in the plasma originated mainly from the target. During the first hours of sputtering the oxygen partial pressure was of the same magnitude as the argon pressure (3.0 Pa) and the film composition was off stoichiometric. During the sputtering the oxygen pressure decreased, the target potential increased and the film composition became more stoichiometric. After 30--40 h of sputtering the target potential and the oxygen pressure stabilized and the film composition was equal to that of the stoichiometric target. If an oxygen flow exceeding a critical level was mixed into the sputtering gas the target potential and the deposition rate decreased swiftly. This was due to target oxidation. In some instances the stabilization after ''presputtering'' in pure argon was incomplete and oscillations in target voltage and oxygen partial pressure were observed. The fluctuations made it virtually impossible to obtain stoichiometric films. The oscillative behavior of the sputtering process is tentatively explained by a target temperature dependent oxygen diffusion

  4. The lowest surface brightness disc galaxy known

    International Nuclear Information System (INIS)

    The discovery of a galaxy with a prominent bulge and a dominant extremely low surface brightness disc component is reported. The profile of this galaxy is very similar to the recently discovered giant low surface brightness galaxy Malin 1. The disc central surface brightness is found to be ∼ 26.4 Rμ, some 1.5 mag fainter than Malin 1 and thus by far the lowest yet observed. (author)

  5. Hydrogen-ion sputtering of borated graphite

    International Nuclear Information System (INIS)

    The development and choice of material for the first wall and other energy-stressed parts of the discharge chamber are an important aspect of fusion reactor construction. In particular, carbon-graphite materials are proposed for making limiters and protective shields of the first wall and receiving plates of diverter devices. Sputtering under ion bombardment is one of the main mechanisms of material erosion; in addition, in the case of carbon-graphite materials chemical sputtering also occurs as a result of the formation of highly volatile hydrocarbon compounds during the reaction with ions of hydrogen isotopes. Sputtering MPG carbon-graphite materials and USB-15 carbon-fiber-reinforced glass ceramic has been well studied and experimental data have been obtained on the coefficients of physical and chemical sputtering. It has been determined that hydrogen-ion sputtering of USB-15 in the range from room temperature to 1070 K is less than that of MPG-8 graphite a factor of 2-10. Bulk doping of graphite with boron substantially reduces chemical sputtering. Since processes in the surface layers are crucially important in sputtering, the possibility of reducing chemical sputtering by surface boration of carbon-graphite materials has been explored. The objective of this work was to continue the experimental investigation to determine the physical processes of sputtering of surface-borated graphite under hydrogen-ion bombardment in the temperature range corresponding to maximum chemical sputtering. Surface boration of MPG-8 and USB-15 samples was carried out by vapor-phase isothermal deposition mediated by gaseous iodine at 1223 K for 4 h (the sample was placed in a pure boron stock). The mass transfer during the vapor-phase deposition is based on the difference of the chemical potentials of iodine and carbon under isothermal conditions. The samples of the initial and borated carbon-graphite materials irradiated with a poly-energetic beam of hydrogen ions

  6. Quantum communication with macroscopically bright nonclassical states.

    Science.gov (United States)

    Usenko, Vladyslav C; Ruppert, Laszlo; Filip, Radim

    2015-11-30

    We analyze homodyne detection of macroscopically bright multimode nonclassical states of light and propose their application in quantum communication. We observe that the homodyne detection is sensitive to a mode-matching of the bright light to the highly intense local oscillator. Unmatched bright modes of light result in additional noise which technically limits detection of Gaussian entanglement at macroscopic level. When the mode-matching is sufficient, we show that multimode quantum key distribution with bright beams is feasible. It finally merges the quantum communication with classical optical technology of visible beams of light. PMID:26698776

  7. The influence of target oxygen on the YBa2Cu3O6+δ DC Magnetron sputtering process

    International Nuclear Information System (INIS)

    The oxygen partial pressure and the target potential have been monitored under a range of process conditions during single target dc magnetron sputtering of Y-Ba-Cu-O. The introduced sputtering gas consisted in all but one instance of pure argon and hence the oxygen present in the plasma originated mainly from the target. During the first hours of sputtering the oxygen partial pressure was of the same magnitude as the argon pressure (3.0 Pa). As the oxygen was released from the target and subsequently removed by pumping, the target potential increased and the film composition became more stoichiometric. After 30-40 hours of sputtering the target potential and the oxygen pressure stabilized and the film composition was equal to that of the stoichiometric target. If an oxygen flow exceeding a critical level was mixed into the sputtering gas the target potential and the deposition rate decreased swiftly. This was due to target oxidation, further manifested in changing plasma and target colours. In some instances the stabilization after 'presputtering' was incomplete and oscillations in target voltage and oxygen partial pressure were observed. The fluctuations made it virtually impossible to obtain stoichiometric films. The oscillative behaviour of the sputtering process is tentatively explained by a target temperature dependent oxygen diffusion. (au)

  8. Transparent conducting ZnO:Ga films prepared on PEN substrates by using RF magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Jeong-Yeon; Kim, Byeong-Guk; Lee, Seok-Jin; Park, Seung-Beum; Park, Jae-Hwan; Lim, Dong-Gun; Kweon, Soon-Yong [Chungju National University, Chungju (Korea, Republic of)

    2010-05-15

    The use of transparent conducting oxide films on polymer substrates has increased, as these substrates are suitable for flexible displays and optoelectronics. In this research, we studied the effects of O{sub 2} plasma pretreatment on the properties of Ga-doped zinc- oxide (GZO) films on PEN substrates. The films were fabricated using the RF magnetron sputtering process. To improve the surface adhesion and the electrical properties, the O{sub 2} plasma pretreatment process prior to GZO sputtering. With the appropriate O{sub 2} plasma treatment, the resistivity of the GZO films on the PEN substrates was 1.5 x 10{sup -3} ohm-cm. The transmittance of the films on the substrates at a wavelength of 550 nm was about 90%.

  9. Impact of sputter deposition parameters on molybdenum nitride thin film properties

    International Nuclear Information System (INIS)

    Molybdenum and molybdenum nitride thin films are presented, which are deposited by reactive dc magnetron sputtering. The influence of deposition parameters, especially the amount of nitrogen during film synthesization, to mechanical and electrical properties is investigated. The crystallographic phase and lattice constants are determined by x-ray diffraction analyses. Further information on the microstructure as well as on the biaxial film stress are gained from techniques such as transmission electron microscopy, scanning electron microscopy and the wafer bow. Furthermore, the film resistivity and the temperature coefficient of resistance are measured by the van der Pauw technique starting from room temperature up to 300 °C. Independent of the investigated physical quantity, a dominant dependence on the sputtering gas nitrogen content is observed compared to other deposition parameters such as the plasma power or the sputtering gas pressure in the deposition chamber. (paper)

  10. Damage mechanisms in thin film solar cells during sputtering deposition of transparent conductive coatings

    International Nuclear Information System (INIS)

    Amorphous silicon (a-Si) based thin film solar cell grown on flexible stainless steel substrate is one of the most promising energy conversion devices in the future. This type of solar cell uses a transparent conductive oxide (TCO) film as top electrode. It has been a widely accepted opinion that the radio frequency sputtering deposition of the TCO film produces a higher yield than direct current sputtering, and the reason is not clear. Here we show that the damage to the solar cell during the sputtering process is caused by a reverse bias applied to the n-i-p junction. This reverse bias is related to the characteristics of plasma discharge. The mechanism we reveal may significantly affect the solar cell process

  11. Effects of rf on the sputtering rate of ICRH antenna components

    International Nuclear Information System (INIS)

    The sputtering rate of an ICRH loop antenna with a graphite-covered Faraday shield is being studied. The antenna is operated at 50 MHz and is exposed to an unmagnetized plasma produced by the High Particle Flux Facility. The flux at the antenna is on the order of 1017 cm-2 s-1. A dc bias voltage is applied to the antenna, which allows the effective energy of the impinging hydrogen ions to be varied up to 200 eV. Rf power is being varied from 0 to 20 kW. The object of the experiment is to determine the sputtering rate of the shields and the antenna current strap as a function of incident particle energy and rf electric fields. The redeposition of sputtered particles is also studied. The report consists of viewgraphs

  12. Reactive sputtering of δ-ZrH2 thin films by high power impulse magnetron sputtering and direct current magnetron sputtering

    International Nuclear Information System (INIS)

    Reactive sputtering by high power impulse magnetron sputtering (HiPIMS) and direct current magnetron sputtering (DCMS) of a Zr target in Ar/H2 plasmas was employed to deposit Zr-H films on Si(100) substrates, and with H content up to 61 at. % and O contents typically below 0.2 at. % as determined by elastic recoil detection analysis. X-ray photoelectron spectroscopy reveals a chemical shift of ∼0.7 eV to higher binding energies for the Zr-H films compared to pure Zr films, consistent with a charge transfer from Zr to H in a zirconium hydride. X-ray diffraction shows that the films are single-phase δ-ZrH2 (CaF2 type structure) at H content >∼55 at. % and pole figure measurements give a 111 preferred orientation for these films. Scanning electron microscopy cross-section images show a glasslike microstructure for the HiPIMS films, while the DCMS films are columnar. Nanoindentation yield hardness values of 5.5–7 GPa for the δ-ZrH2 films that is slightly harder than the ∼5 GPa determined for Zr films and with coefficients of friction in the range of 0.12–0.18 to compare with the range of 0.4–0.6 obtained for Zr films. Wear resistance testing show that phase-pure δ-ZrH2 films deposited by HiPIMS exhibit up to 50 times lower wear rate compared to those containing a secondary Zr phase. Four-point probe measurements give resistivity values in the range of ∼100–120 μΩ cm for the δ-ZrH2 films, which is slightly higher compared to Zr films with values in the range 70–80 μΩ cm

  13. Sputtering properties of redeposited graphite surfaces

    International Nuclear Information System (INIS)

    Sputtering yields for carbon redeposited films, put down in the presence of high neutral hydrogen and helium background concentrations, have been measured. The data were obtained using the ion-surface interaction system (ISIS) which is an ion beam sputtering system capable of creating redeposited films and measuring sputtering yields. Yields were determined by calibrated collection of a portion of the sputtered material onto a quartz-crystal-microbalance. Incident ion beam energies ranged from 100 eV up to 10 keV. Sputtering yields for hydrogen and helium bombardment of redeposited films created in ISIS from targets of Union Carbide ATJ graphite are reported. In addition, yields obtained from ISIS proton and deuteron bombardment of Poco AXF-5Q graphite surfaces previously modified in PISCES are also presented. Measurements of sputtering yields from pristine, bulk samples are reported for comparison. Hydrogen sputtering yields from redeposited films generated in ISIS are 2.5 times higher than those of pristine ATJ at an incident energy of 100 eV. Above 200 eV, the hydrogen yields are a factor of 1.4 higher for the redeposited material. Helium yields are 34 times greater for redeposited films at 100 eV and remain as much as 10 times greater above 500 eV. Curve-fits to the data, obtained by incorporating an effective surface binding energy for the redeposited film into a semi-empirical yield expression, are also presented. (orig.)

  14. Fabrication of hydrogenated microcrystalline silicon thin films using RF magnetron sputtering

    Science.gov (United States)

    Wang, Hsuan-Wen; Su, Wei-Ning; Han, Chia-Wei; Chen, Sheng-Hui; Lee, Cheng-Chung

    2007-09-01

    Hydrogenated microcrystalline silicon (μc-Si:H ) thin films have attracted many attentions due to the high mobility compared with the amorphous silicon (a-Si) thin films. To fabricate μc-Si:H thin films, plasma-enhance chemical vapor deposition (PECVD) is the most popular method. The disadvantages of PECVD are the high facility cost and using the toxic processing gases such as silane (SiH 4). Whereas there is no these disadvantages using radio-frequency (RF) magnetron sputtering to deposit silicon thin films. Unfortunately, the silicon thin films deposited by the regular RF magnetron sputtering are a-Si. In this study, μc-Si:H thin films were fabricated using RF magnetron sputtering with argon and hydrogen as working gas at low substrate temperature (T s=250°C and 350°C).The grain sizes, crystal volume fractions and photosensitivity (ratios of dark conductivities and photo conductivities) of the μc-Si:H thin films which deposited with different hydrogen partial pressures and sputtering powers were analyzed. The results showed that the grain sizes and the crystal volume fractions were increased and the photosensitivity was decreased as the hydrogen partial pressure increased at the sputtering power 200W. The grain size was between 15 to 20 nm and the crystal volume fractions was between 75 to 80% when the hydrogen partial pressure was over 90%.

  15. Sputtering of indium under polyatomic ion bombardment

    Energy Technology Data Exchange (ETDEWEB)

    Samartsev, A.V.

    2004-10-01

    The main goal of the present study is the investigation of the sputtering of neutral particles from a metal surface under atomic and polyatomic ion bombardment using secondary neutral time-of-flight mass spectrometry (ToF SNMS). For postionization of neutral species, UV laser irradiation with wavelength 193 nm was utilized. For generation of polyatomic projectiles, a negatives sputter cesium ion source suitable for To F SNMS setup was developed and built. The ion source delivers negatively charged Au{sub m}{sup -} (m=1/5) and AuCs{sub 2} polyatomic ions produced from a gold sputter target bombarded by positive Cs{sup +} ions. Mass separation of primary projectiles in the ion source is performed by a built-in compact Wien filter allowing to separate heavy ions in the energy range of several keV. In the experiment, an indium surface was bombarded by Au{sub m}{sup -} (m=1/5) projectiles with total impact energy of 5 and 10 keV. The obtained mass distributions of sputtered indium species reveal that the partial yields of sputtered clusters increase under polyatomic ion bombardment. It is shown that the enhancement in total sputtering yield per constituent atom of the projectile ion is non-additively enhanced in the case of diatomic ion bombardment in comparison with monoatomic projectile ions impinging at the same velocity. The enhancement of partial yields observed for sputtered clusters is found to increase with increasing cluster size, reaching a factor fo several ten for the largest detected cluster. Apart from sputtering yields, kinetic energy distributions (KED) of sputtered neutral indium atoms ejected under mono- and polyatomic projectile ion bombardment were measured. (orig.)

  16. Ion beam sputter implantation method

    International Nuclear Information System (INIS)

    By means of ion beam atomizing or sputtering an integrally composed coating, the composition of which continuously changes from 100% of the substrate to 100% of the coating, can be surfaced on a substrate (e.g. molten quartz on plastic lenses). In order to do this in the facility there is directed a primary beam of accelerated noble gas ions on a target from the group of the following materials: SiO2, Al2O3, Corning Glass 7070, Corning Glass 7740 or borosilicate glass. The particles leaving the target are directed on the substrate by means of an acceleration potential of up to 10 KV. There may, however, be coated also metal layers (Ni, Co) on a mylar film resulting in a semireflecting metal film. (RW)

  17. Soliton fay identities: II. Bright soliton case

    International Nuclear Information System (INIS)

    We present a set of bilinear matrix identities that generalize the ones that have been used to construct the bright soliton solutions for various models. As an example of an application of these identities, we present a simple derivation of the N-bright soliton solutions for the Ablowitz–Ladik hierarchy. (paper)

  18. Incoherently coupled dark-bright photorefractive solitons

    Science.gov (United States)

    Chen, Zhigang; Segev, Mordechai; Coskun, Tamer H.; Christodoulides, Demetrios N.; Kivshar, Yuri S.; Afanasjev, Vsevolod V.

    1996-11-01

    We report the observation of incoherently coupled dark-bright spatial soliton pairs in a biased bulk photorefractive crystal. When such a pair is decoupled, the dark component evolves into a triplet structure, whereas the bright one decays into a self-defocusing beam.

  19. Spatial Brightness Perception of Trichromatic Stimuli

    Energy Technology Data Exchange (ETDEWEB)

    Royer, Michael P.; Houser, Kevin W.

    2012-11-16

    An experiment was conducted to examine the effect of tuning optical radiation on brightness perception for younger (18-25 years of age) and older (50 years of age or older) observers. Participants made forced-choice evaluations of the brightness of a full factorial of stimulus pairs selected from two groups of four metameric stimuli. The large-field stimuli were created by systematically varying either the red or the blue primary of an RGB LED mixture. The results indicate that light stimuli of equal illuminance and chromaticity do not appear equally bright to either younger or older subjects. The rank-order of brightness is not predicted by any current model of human vision or theory of brightness perception including Scotopic to Photopic or Cirtopic to Photopic ratio theory, prime color theory, correlated color temperature, V(λ)-based photometry, color quality metrics, linear brightness models, or color appearance models. Age may affect brightness perception when short-wavelength primaries are used, especially those with a peak wavelength shorter than 450 nm. The results suggest further development of metrics to predict brightness perception is warranted, and that including age as a variable in predictive models may be valuable.

  20. Soliton Fay identities. II. Bright soliton case

    OpenAIRE

    Vekslerchik, V. E.

    2015-01-01

    We present a set of bilinear matrix identities that generalize the ones that have been used to construct the bright soliton solutions for various models. As an example of an application of these identities, we present a simple derivation of the N-bright soliton solutions for the Ablowitz-Ladik hierarchy.

  1. Composition of sputtered material from CuNi alloy during Xe + ion sputtering at elevated temperatures

    Science.gov (United States)

    Sekine, Shigeyuki; Shimizu, Hazime; Ichimura, Singo

    1995-04-01

    Polycrystalline CuNi alloys were sputtered by 3 kV Xe + ions at elevated temperatures to analyze the ion-beam-induced diffusion. The time evolution of the composition of the sputtered materials from the start of the sputtering was measured by TOF-SNMS (time-of-flight sputtered neutral mass spectrometry). During removal of the Gibbsian segregation layer of copper, the sputtered flux consisted of almost only copper atoms. Then, the copper content gradually decreased due to the formation of a sputter-induced copper-depleted surface layer, and reached an almost steady state with still higher copper content than the bulk composition. From the temperature dependence of the composition at the quasi-steady state the activation energy of copper transportation through a high diffusivity path was derived to be 54 kJ mol -1 (0.56 eV). The high diffusivity path was assigned to copper diffusion through grain boundaries.

  2. Galaxy selection and the surface brightness distribution

    CERN Document Server

    McGaugh, S S; Schombert, J M

    1995-01-01

    Optical surveys for galaxies are biased against the inclusion of low surface brightness (LSB) galaxies. Disney (1976) suggested that the constancy of disk central surface brightness noticed by Freeman (1970) was not a physical result, but instead was an artifact of sample selection. Since LSB galaxies do exist, the pertinent and still controversial issue is if these newly discovered galaxies constitute a significant percentage of the general galaxy population. In this paper, we address this issue by determining the space density of galaxies as a function of disk central surface brightness. Using the physically reasonable assumption (which is motivated by the data) that central surface brightness is independent of disk scale length, we arrive at a distribution which is roughly flat (\\ie approximately equal numbers of galaxies at each surface brightness) faintwards of the Freeman (1970) value. Brightwards of this, we find a sharp decline in the distribution which is analogous to the turn down in the luminosity ...

  3. Analysis of sputtering from a TiC coated test limiter in the Tokamak de Varennes

    International Nuclear Information System (INIS)

    An assembly which allows insertion of a test-limiter into a hot plasma has been developed. In addition to its usefulness in the study of various materials, it is also well adapted for measuring the properties of the edge plasma. Measurements of sputtering and power deposition can be used to determine unique values for the plasma density and temperature. In addition, the fluctuations of the radiation from the edge have shown very regular 'sawteeth', which we have correlated with other diagnostics. These display a surprising phase inversion near the edge

  4. Bright Sparks of Our Future!

    Science.gov (United States)

    Riordan, Naoimh

    2016-04-01

    My name is Naoimh Riordan and I am the Vice Principal of Rockboro Primary School in Cork City, South of Ireland. I am a full time class primary teacher and I teach 4th class, my students are aged between 9-10 years. My passion for education has developed over the years and grown towards STEM (Science, Technology, Engineering and Mathematics) subjects. I believe these subjects are the way forward for our future. My passion and beliefs are driven by the unique after school programme that I have developed. It is titled "Sparks" coming from the term Bright Sparks. "Sparks" is an after school programme with a difference where the STEM subjects are concentrated on through lessons such as Science, Veterinary Science Computer Animation /Coding, Eco engineering, Robotics, Magical Maths, Chess and Creative Writing. All these subjects are taught through activity based learning and are one-hour long each week for a ten-week term. "Sparks" is fully inclusive and non-selective which gives all students of any level of ability an opportunity to engage into these subjects. "Sparks" is open to all primary students in County Cork. The "Sparks" after school programme is taught by tutors from the different Universities and Colleges in Cork City. It works very well because the tutor brings their knowledge, skills and specialised equipment from their respective universities and in turn the tutor gains invaluable teaching practise, can trial a pilot programme in a chosen STEM subject and gain an insight into what works in the physical classroom.

  5. Designers predict a bright future

    International Nuclear Information System (INIS)

    As power plant designers and builders, there is a bright future for the industry. The demand for electricity will continue to grow, and the need for new plants will increase accordingly. But companies that develop and supply these plants must adapt to new ways of doing business if they expect to see the dawn of this new age. Several factors will have a profound effect on the generation and use of electricity in future years. Instant communications now reach all corners of the globe, making people everywhere aspire to a higher standard of living. The economic surge needed to satisfy these appetites will, in turn, be fed by a network of suppliers who are themselves restructuring to serve global markets, unimpeded by past nationalistic barriers to trade. The strong correlation between economic progress and the growing demand for electricity is well recognized. A ready supply of affordable electricity is a necessary underpinning for any economic expansion. As economies advance and jobs increase, electric demand grows geometrically, fueled by an ever-improving quality of life. Coupled with increasing demand is the worldwide trend toward privatization of the generation industry. The reasons may vary in different parts of the world, but the effect is the same--companies are battling intensely for the right to build or purchase generating facilities. Those companies, like the industry they serve, are themselves in a period of transition. Once a closed, monopolistic group of owners in a predominantly services-based market, they are, thanks to competitive forces, being driven steadily toward a product-based structure

  6. Large Area Sputter Coating on Glass

    Science.gov (United States)

    Katayama, Yoshihito

    Large glass has been used for commercial buildings, housings and vehicles for many years. Glass size for flat displays is getting larger and larger. The glass for the 8th generation is more than 5 m2 in area. Demand of the large glass is increasing not only in these markets but also in a solar cell market growing drastically. Therefore, large area coating is demanded to plus something else on glass more than ever. Sputtering and pyrolysis are the major coating methods on large glass today. Sputtering process is particularly popular because it can deposit a wide variety of materials in good coating uniformity on the glass. This paper describes typical industrial sputtering system and recent progress in sputtering technology. It also shows typical coated glass products in architectural, automotive and display fields and comments on their functions, film stacks and so on.

  7. On the formation of Ganymede's surface brightness asymmetries: Kinetic simulations of Ganymede's magnetosphere

    Science.gov (United States)

    Fatemi, S.; Poppe, A. R.; Khurana, K. K.; Holmström, M.; Delory, G. T.

    2016-05-01

    Ganymede possesses strong surface brightness asymmetries both between its polar cap and equatorial regions and between its leading and trailing hemispheres. Here we test the hypothesis that these asymmetries are due to differential Jovian plasma and energetic particle precipitation to the surface with the combination of a hybrid plasma model (kinetic ions and fluid electrons) and a particle tracing model. We describe the hybrid model, the first of its kind applied to Ganymede, and compare the results to both Galileo observations and previous MHD and MHD-EPIC models of Ganymede. We calculate spatially resolved precipitating Jovian ion fluxes to the surface of Ganymede for energies 1 brightness variations. Thus, we conclude that precipitating energetic particle fluxes are the primary driver for altering the surface brightness of Ganymede.

  8. DEPOSITION OF NIOBIUM AND OTHER SUPERCONDUCTING MATERIALS WITH HIGH POWER IMPULSE MAGNETRON SPUTTERING: CONCEPT AND FIRST RESULTS

    Energy Technology Data Exchange (ETDEWEB)

    High Current Electronics Institute, Tomsk, Russia; Anders, Andre; Mendelsberg, Rueben J.; Lim, Sunnie; Mentink, Matthijs; Slack, Jonathan L.; Wallig, Joseph G.; Nollau, Alexander V.; Yushkov, Georgy Yu.

    2011-07-24

    Niobium coatings on copper cavities have been considered as a cost-efficient replacement of bulk niobium RF cavities, however, coatings made by magnetron sputtering have not quite lived up to high expectations due to Q-slope and other issues. High power impulse magnetron sputtering (HIPIMS) is a promising emerging coatings technology which combines magnetron sputtering with a pulsed power approach. The magnetron is turned into a metal plasma source by using very high peak power density of ~ 1 kW/cm{sup 2}. In this contribution, the cavity coatings concept with HIPIMS is explained. A system with two cylindrical, movable magnetrons was set up with custom magnetrons small enough to be inserted into 1.3 GHz cavities. Preliminary data on niobium HIPIMS plasma and the resulting coatings are presented. The HIPIMS approach has the potential to be extended to film systems beyond niobium, including other superconducting materials and/or multilayer systems.

  9. Deposition of thin films by magnetron sputtering molybdenum in samples of pure copper; Deposicao de filmes finos de molibdenio por magnetron sputtering em amostra de cobre puro

    Energy Technology Data Exchange (ETDEWEB)

    Ferreira, N.M.; Almeida, E.O. de; Alves Junior, C. [Universidade Federal do Rio Grande do Norte, Campus Universitario Lagoa Nova, PPGCEM - Natal, RN (Brazil); Lourenco, J.M. [Instituto Federal de Educacao, Ciencias e Tecnologia do Rio Grande do Norte (IFRN), Natal, RN (Brazil)

    2010-07-01

    The deposition surface is a process of thermochemical treatment, which involves the deposition of a thin film usually about one to two microns on a metallic substrate, which constitutes one of the most important surface engineering techniques. The plasma deposition process with the configuration of magnetron sputtering it is removing material from a solid surface (target) through the impact of energetic particles from plasma. The aim of this study is to characterize the microstructure of the material under study using the techniques of optical microscopy and scanning electron microscopy. (author)

  10. Chemically enhanced self-sputtering of carbon

    International Nuclear Information System (INIS)

    New results obtained for graphite self-sputtering, in the presence of thermal atomic hydrogen, show that Chemically Enhanced Self-Sputtering (CES) can exceed unity erosion yield even at normal angles of incidence. CES yields were found to depend on the ΦC+/ΦHo flux ratio and graphite temperature, with peak erosion occurring at about 800K. No dependence on angle of incidence was observed

  11. Sputtering yield measurements on single crystal cobalt

    International Nuclear Information System (INIS)

    Single crystals of cobalt have been bombarded with 80 keV A+ ions in the direction of the h.c.p. structure and in the direction of the f.c.c. structure. The sputtering yields, measured by the weight loss method, depend on the crystal structure, and damage, introduced by the ion bombardment, is shown to play a significant role in the explanation of the measured sputtering yields. (Auth.)

  12. Sputtering of sodium on the planet Mercury

    Science.gov (United States)

    Mcgrath, M. A.; Johnson, R. E.; Lanzerotti, L. J.

    1986-01-01

    It is shown here that ion sputtering cannot account for the observed neutral sodium vapor column density on Mercury, but that it is an important loss mechanism for Na. Photons are likely to be the dominant stimulus, both directly through photodesorption and indirectly through thermal desorption of absorbed Na. It is concluded that the atmosphere produced is characterized by the planet's surface temperature, with the ion-sputtered Na contributing to a lesser, but more extended, component of the atmosphere.

  13. Bright boys the making of information technology

    CERN Document Server

    Green, Tom

    2010-01-01

    Everything has a beginning. None was more profound-and quite as unexpected-than Information Technology. Here for the first time is the untold story of how our new age came to be and the bright boys who made it happen. What began on the bare floor of an old laundry building eventually grew to rival in size the Manhattan Project. The unexpected consequence of that journey was huge---what we now know as Information Technology. For sixty years the bright boys have been totally anonymous while their achievements have become a way of life for all of us. "Bright Boys" brings them home. By 1950 they'd

  14. On the road to self-sputtering in high power impulse magnetron sputtering: particle balance and discharge characteristics

    International Nuclear Information System (INIS)

    The onset and development of self-sputtering (SS) in a high power impulse magnetron sputtering (HiPIMS) discharge have been studied using a plasma chemical model and a set of experimental data, taken with an aluminum target and argon gas. The model is tailored to duplicate the discharge in which the data are taken. The pulses are long enough to include both an initial transient and a following steady state. The model is used to unravel how the internal discharge physics evolves with pulse power and time, and how it is related to features in the discharge current–voltage–time characteristics such as current densities, maxima, kinks and slopes. The connection between the self-sputter process and the discharge characteristics is quantified and discussed in terms of three parameters: a critical target current density Jcrit based on the maximum refill rate of process (argon) gas above the target, an SS recycling factor ΠSS-recycle, and an approximation α-tilde of the probabilities of ionization of species that come from the target (both sputtered metal and embedded argon atoms). For low power pulses, discharge voltages UD ⩽ 380 V with peak current densities below ≈ 0.2 A cm−2, the discharge is found to be dominated by process gas sputtering. In these pulses there is an initial current peak in time, associated with partial gas rarefaction, which is followed by a steady-state-like plateau in all parameters similar to direct current magnetron sputtering. In contrast, high power pulses, with UD ⩾ 500 V and peak current densities above JD ≈ 1.6 A cm−2, make a transition to a discharge mode where SS dominates. The transition is found not to be driven by process gas rarefaction which is only about 10% at this time. Maximum gas rarefaction is found later in time and always after the initial peak in the discharge current. With increasing voltage, and pulse power, the discharge can be described as following a route where the role of SS increases in

  15. Magnetron source of accelerated plasma flow

    Science.gov (United States)

    Veresov, L. P.; Veresov, O. L.

    2016-01-01

    A new source of an accelerated plasma flow intended for depositing high-quality coatings is described. In this source, a magnetron discharge for cathode target sputtering is combined with a high-voltage discharge with longitudinal oscillation of electrons for ionization of the accrued vapor in which the plasma density is distributed uniformly owing to the application of three-phase ionizer.

  16. Bibliography on plasma-wall interactions

    International Nuclear Information System (INIS)

    Bibliography is compiled for the following subjects: (1) Plasma-wall interactions, general, (2) Sputtering, (3) Chemical sputtering, (4) Blistering, (5) Electron-impact desorption, (6) Thermal desorption and photo-desorption, (7) Emission of secondary electrons and ions, emission of photoelectrons, and material for getters, (8) Gas release and trapping, (9) Approach from surface diagnostics (review). The compilation has not been intended to be complete, but to give a first step toward a further study of the respective subjects. (author)

  17. Gas rarefaction and the time evolution of long high-power impulse magnetron sputtering pulses

    International Nuclear Information System (INIS)

    Model studies of 400 µs long discharge pulses in high-power impulse magnetron sputtering have been made to study the gas dynamics and plasma chemistry in this type of pulsed processing plasma. Data are taken from an experiment using square voltage pulses applied to an Al target in an Ar atmosphere at 1.8 Pa. The study is limited to low power densities, −2, in which the discharge is far away from the runaway self-sputtering mode. The model used is the ionization region model, a time-dependent plasma chemistry discharge model developed for the ionization region in magnetron sputtering discharges. It gives a close fit to the discharge current during the whole pulse, both an initial high-current transient and a later plateau value of constant lower current. The discharge current peak is found to precede a maximum in gas rarefaction of the order of ΔnAr/nAr,0 ≈ 50%. The time durations of the high-current transient, and of the rarefaction maximum, are determined by the time it takes to establish a steady-state diffusional refill of process gas from the surrounding volume. The dominating mechanism for gas rarefaction is ionization losses, with only about 30% due to the sputter wind kick-out process. During the high-current transient, the degree of sputtered metal ionization reaches 65–75%, and then drops to 30–35% in the plateau phase. The degree of self-sputtering (defined here as the metal ion fraction of the total ion current to the target) also varies during the pulse. It grows from zero at pulse start to a maximum of 65–70% coinciding in time with the maximum gas rarefaction, and then stabilizes in the range 40–45% during the plateau phase. The loss in deposition rate that can be attributed to the back-attraction of the ionized sputtered species is also estimated from the model. It is low during the initial 10–20 µs, peaks around 60% during the high-current transient, and finally stabilizes around 30% during the plateau phase. (paper)

  18. Highly (001)-textured WS2-x films prepared by reactive radio frequency magnetron sputtering

    International Nuclear Information System (INIS)

    Highly (001)-oriented WS2-x films were grown onto oxidized silicon substrates by reactive magnetron sputtering from a metallic tungsten target in argon-hydrogen sulfide mixtures. The best films with respect to the van-der-Waals orientation, i.e. with the (001) planes parallel to the substrate surface, were grown by excitation of the plasma with radio frequency of 27.12 MHz. These films exhibit the largest grains and the lowest film strain. It is shown that this effect is not due to the lower deposition rate at this high excitation frequency. Instead it was found that the lower DC voltage at the sputtering target is advantageous for the film growth since the bombardment of the growing film by highly energetic particles is avoided by this type of plasma excitation. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  19. Sputtered coatings for microfluidic applications

    International Nuclear Information System (INIS)

    Magnetron sputter-deposited features and coatings are finding a broad range of uses in microfluidic devices being developed at the Pacific Northwest National Laboratory. Such features are routinely incorporated into multilayer laminated microfluidic components where specific functionality is required, and where other methods for producing these features have been deemed unacceptable. Applications include electrochemical sensors, heaters and temperature probes, electrical leads and insulation layers, piezoelectric actuators and transducers, and chemical modification of surfaces. Small features, such as those required for the production of microsensor electrodes or miniature resistive heaters on microfluidic chips, were patterned using standard lithographic methods, or with masks produced by laser micromachining processes. Thin-film piezoelectric materials such as aluminum nitride have been deposited at low temperatures for use with temperature sensitive materials. Use of the coating technology and its application in the fabrication of specific microfluidic devices, including a groundwater sensor, miniature piezoelectric ultrasonic transducers and actuators, a polymerase chain reaction thermal cycler, and a microchannel flow diagnostic device, are discussed. Technical issues associated with these coatings, such as adhesion, chemical resistance, and surface defects are also addressed. (c) 2000 American Vacuum Society

  20. 溅射沉积氢化非晶硅中辉光放电等离子体的Langmuir探针诊断%Diagnosis of Glow Discharge Plasma with Langmuir Probe in Growth of Magnetron Sputtered a-Si:H Film

    Institute of Scientific and Technical Information of China (English)

    李洪涛; 蒋百灵; 杨波; 曹政; 郭维华; 焦栋茂

    2011-01-01

    为揭示磁控溅射辉光放电等离子体参量对Si薄膜沉积过程的本质影响,采用Langmuir探针于不同的靶电流、靶基距和氢分压条件下对直流辉光放电等离子体进行了诊断,分析了直流辉光放电等离子体参量(离子密度、离子流通量、等离子体电势、电子密度、电子温度)的变化规律,并以此为依据探讨了其对Si靶溅射过程和溅射Si粒子输运过程的影响.结果表明:不同靶电流下,距靶面3cm处等离子体参量中离子密度、离子流通量和电子密度均随靶电流的增大而增大;靶电流为0.5A时,在靶基距从4cm增大至21 cm过程中,离子密度和离子流通量先增大后减小,均在9cm处出现峰值;靶基距恒为12 cm 时,随氢气流量的增大,离子密度和离子流通量均增大(除氢气流量为45 ml/nin(标准状态)时有所下降).上述各参数下电子温度的变化波动性较大,但电子能量均在1~5eV,即高能电子所占比例极小.%The amorphous hydrogenated silicon films (a-Si: H) were deposited by plasma enhanced DC magnetron sputtering. The impacts of the growth conditions, such as the target current, hydrogen partial pressure, target-substrate separation, and plasma enhancement, on microstructures and quality of the films were studied.The characteristics of the glow discharge plasma,including the ion density and flux,plasma potential distribution,electron density and temperature, were in-situ evaluated with Langmuir probe.The results show that at a target-substrate separation of 3 cm,the ion density,ion flux and electron density increase with an increase of the target current; at a target current of 0.5 A,as the separation increases from 4 cm to 21 cm, both the ion density and flux rise up, and then drops down, peaking at the separation of 9 cm;at 12 cm,as the hydrogen flow rate increases, the ion density and flux increase. Except few high energy electrons, most electrons have energies ranging from 1 eV to 5

  1. The solar brightness temperature at millimeter wavelengths

    Science.gov (United States)

    Kuseski, R. A.; Swanson, P. N.

    1976-01-01

    Measurements of the brightness temperature of the sun near 36 GHz and 93 GHz were made using the new moon as a calibration source. Provided the brightness temperature of the moon is known and all measurements are reduced to the same zenith angle, a simple expression can be used for the sun-to-new moon ratio which is independent of antenna gain, atmospheric absorption and reemission, and radiometer calibration constants. This ratio was measured near 36 GHz and at two frequencies near 93 GHz with a Dicke switched superheterodyne radiometer system and a 2.4 m Cassegrain antenna. The slopes of the solar brightness temperature spectrum based on these ratios were measured. The absolute solar brightness spectrum derived from all current available measurements supplemented by the present ones is also plotted and discussed.

  2. A spectroscopic atlas of bright stars

    CERN Document Server

    Martin, Jack

    2009-01-01

    Suitable for amateur astronomers interested in practical spectroscopy or spectrography, this reference book identifies more than 70 (northern hemisphere) bright stars that are suitable observational targets. It provides finder charts for locating these sometimes-familiar stars.

  3. Surface Brightness Profiles of Seyfert Galaxies

    CERN Document Server

    Tugay, A V

    2014-01-01

    We built r-band surface brightness profiles by SDSS data for 16 Seyfert galaxies observed in Crimean Astrophysical Observatory. Obtained profiles can be used for finding more accurate lightcurves for these galaxies.

  4. Brightness of synchrotron radiation from wigglers

    CERN Document Server

    Geloni, Gianluca; Saldin, Evgeni

    2014-01-01

    According to literature, while calculating the brightness of synchrotron radiation from wigglers, one needs to account for the so called `depth-of-field' effects. In fact, the particle beam cross section varies along the wiggler. It is usually stated that the effective photon source size increases accordingly, while the brightness is reduced. Here we claim that this is a misconception originating from an analysis of the wiggler source based on geometrical arguments, regarded as almost self-evident. According to electrodynamics, depth-of-field effects do not exist: we demonstrate this statement both theoretically and numerically, using a well-known first-principle computer code. This fact shows that under the usually accepted approximations, the description of the wiggler brightness turns out to be inconsistent even qualitatively. Therefore, there is a need for a well-defined procedure for computing the brightness from a wiggler source. We accomplish this task based on the use of a Wigner function formalism. I...

  5. Revising secondary electron yields of ion-sputtered metal oxides

    Science.gov (United States)

    Corbella, Carles; Marcak, Adrian; de los Arcos, Teresa; von Keudell, Achim

    2016-04-01

    The emission of secondary electrons (SE) during sputtering of Al and Ti foils by argon ions in an oxygen background has been measured in a particle beam reactor equipped with a SE-collector. This experiment mimics the process of reactive magnetron sputtering. Quantified beams of argon ions with energies between 500 eV and 2000 eV were employed, while simultaneously molecular oxygen fluxes impinged on the surface and caused oxidation. The measured secondary electron emission coefficients (γ) ranged from approximately 0.1 (for clean aluminium and titanium) to 1.2 and 0.6 (in the case of aluminium oxide and titanium oxide, respectively). The increase of γ is compared to SE measurements based on the modelling of magnetron plasmas. Moreover, the energy distributions of the emitted SE have been measured by varying the retarding potential of the SE-collector, which allows the monitoring of the oxidation state from the position of the Auger peaks. The origin of the observed SE yields based on the emission of low- and high-energy electrons generated on the oxide surface is discussed.

  6. Protective infrared antireflection coating based on sputtered germanium carbide

    Science.gov (United States)

    Gibson, Des; Waddell, Ewan; Placido, Frank

    2011-09-01

    This paper describes optical, durablility and environmental performance of a germanium carbide based durable antireflection coating. The coating has been demonstrated on germanium and zinc selenide infra-red material however is applicable to other materials such as zinc sulphide. The material is deposited using a novel reactive closed field magnetron sputtering technique, offering significant advantages over conventional evaporation processes for germanium carbide such as plasma enhanced chemical vapour deposition. The sputtering process is "cold", making it suitable for use on a wide range of substrates. Moreover, the drum format provide more efficient loading for high throughput production. The use of the closed field and unbalanced magnetrons creates a magnetic confinement that extends the electron mean free path leading to high ion current densities. The combination of high current densities with ion energies in the range ~30eV creates optimum thin film growth conditions. As a result the films are dense, spectrally stable, supersmooth and low stress. Films incorporate low hydrogen content resulting in minimal C-H absorption bands within critical infra-red passbands such as 3 to 5um and 8 to 12um. Tuning of germanium carbide (Ge(1-x)Cx) film refractive index from pure germanium (refractive index 4) to pure germanium carbide (refractive index 1.8) will be demonstrated. Use of film grading to achieve single and dual band anti-reflection performance will be shown. Environmental and durability levels are shown to be suitable for use in harsh external environments.

  7. Optimizations in sputtering glass as permeation barrier for laser targets

    International Nuclear Information System (INIS)

    Glass thin films appear particularly interesting as semipermeable barriers for many non cryogenic target applications. This functional layer can be sputtered from quartz targets onto CHx micro-shells synthesized by glow discharge polymerization. In the present work, we investigate the influence of deposit parameters (pressure, RF power, target-holder distance, and plasma composition) on glass coating microstructure and permeation properties. The permeation properties of CHx/SiO2/CHx capsules are studied by mass spectrometry using deuterium (D2) as the filling gas. The use of a low deposition pressure and a high RF power in a background atmosphere of argon appears essential to obtain the most efficient barrier. The optimized sputtering conditions allow deuterium half-lives of 1 month on 1700-μm CHx capsules, including a 1-μm-thick SiO2 coating (corresponding to a permeation coefficient of 3*10-20 mol.m-1.s-1.Pa-1). These capsules could be filled to the required pressures (∼3 MPa) for Laser Mega-joule (LMJ) experiments. (authors)

  8. The surface brightness of spiral galaxies

    International Nuclear Information System (INIS)

    The intrinsic surface brightness Ssub(e) of 500 disc galaxies (0<=T<=9) drawn from the Second Reference Catalogue is computed and it is shown that Ssub(e) does not correlate significantly with Msub(B), (B-V) or type. This is consistent with the notion that there is a heavy selection bias in favour of disc galaxies with that particular surface brightness which allows inclusion in the catalogue over the largest volume of space. (author)

  9. The surface brightness of spiral galaxies

    International Nuclear Information System (INIS)

    It is proposed that Freeman's discovery that the extrapolated central surface brightness of spiral galaxies is approximately constant can be simply explained if the galaxies contain a spheroidal component which dominates the light in their outer isophotes. Calculations of an effective central surface brightness indicate a wide spread of values. This requires either a wide spread in disc properties or significant spheroidal components or, most probably, both. (author)

  10. Computer simulation of sputtering of graphite target in magnetron sputtering device with two zones of erosion

    Directory of Open Access Journals (Sweden)

    Bogdanov R.V.

    2015-03-01

    Full Text Available A computer simulation program for discharge in a magnetron sputtering device with two erosion zones was developed. Basic laws of the graphite target sputtering process and transport of sputtered material to the substrate were taken into account in the Monte Carlo code. The results of computer simulation for radial distributions of density and energy flux of carbon atoms on the substrate (at different values of discharge current and pressure of the working gas confirmed the possibility of obtaining qualitative homogeneous films using this magnetron sputtering device. Also the discharge modes were determined for this magnetron sputtering device, in which it was possible to obtain such energy and density of carbon atoms fluxes, which were suitable for deposition of carbon films containing carbon nanotubes and other nanoparticles.

  11. Multitarget sputtering of piezoelectric mixed oxide thin films onto flexible substrates

    Czech Academy of Sciences Publication Activity Database

    Kleiner, A.; Suchaneck, G.; Dejneka, Alexandr; Jastrabík, Lubomír; Lavrentiev, V.; Kiselev, D.A.; Gerlach, G.

    Pfaffikon: Scientific.Net, 2015 - (Ubizskii, S.; Vasylechko, L.; Zhydachevskii, Y.), s. 3-7. (Solid State Phenomena. 230). ISBN 978-3-03835-428-4. ISSN 1662-9779. [Oxide Materials for Electronic Engineering – Fabrication, Properties and Applications (ОМЕЕ 2014). Lviv (UA), 26.05.2014-30.05.2014] Institutional support: RVO:68378271 Keywords : complex oxide film deposition * PZT * multitarget reactive magnetron sputtering * flexible polymer substrate * XPS * PFM Subject RIV: BL - Plasma and Gas Discharge Physics

  12. Preparation of CIGS thin films by HiPIMS or DC sputtering and various selenization processes

    Czech Academy of Sciences Publication Activity Database

    Olejníček, Jiří; Hubička, Zdeněk; Kšírová, Petra; Kment, Štěpán; Brunclíková, Michaela; Kohout, Michal; Čada, Martin; Darveau, S.A.; Exstrom, C.L.

    2013-01-01

    Roč. 16, č. 2 (2013), s. 314-319. ISSN 1203-8407 R&D Projects: GA MŠk LH12045 Institutional support: RVO:68378271 Keywords : CIGS * HIPIMS * selenization * nanocrystals * solar energy * sputtering * thin films Subject RIV: BL - Plasma and Gas Discharge Physics Impact factor: 1.106, year: 2013 http://www.ingentaconnect.com/content/stn/jaots/2013/00000016/00000002/art00015

  13. Deuterium Retention and Physical Sputtering of Low Activation Ferritic Steel

    Science.gov (United States)

    T, Hino; K, Yamaguchi; Y, Yamauchi; Y, Hirohata; K, Tsuzuki; Y, Kusama

    2005-04-01

    Low activation materials have to be developed toward fusion demonstration reactors. Ferritic steel, vanadium alloy and SiC/SiC composite are candidate materials of the first wall, vacuum vessel and blanket components, respectively. Although changes of mechanical-thermal properties owing to neutron irradiation have been investigated so far, there is little data for the plasma material interactions, such as fuel hydrogen retention and erosion. In the present study, deuterium retention and physical sputtering of low activation ferritic steel, F82H, were investigated by using deuterium ion irradiation apparatus. After a ferritic steel sample was irradiated by 1.7 keV D+ ions, the weight loss was measured to obtain the physical sputtering yield. The sputtering yield was 0.04, comparable to that of stainless steel. In order to obtain the retained amount of deuterium, technique of thermal desorption spectroscopy (TDS) was employed to the irradiated sample. The retained deuterium desorbed at temperature ranging from 450 K to 700 K, in the forms of DHO, D2, D2O and hydrocarbons. Hence, the deuterium retained can be reduced by baking with a relatively low temperature. The fluence dependence of retained amount of deuterium was measured by changing the ion fluence. In the ferritic steel without mechanical polish, the retained amount was large even when the fluence was low. In such a case, a large amount of deuterium was trapped in the surface oxide layer containing O and C. When the fluence was large, the thickness of surface oxide layer was reduced by the ion sputtering, and then the retained amount in the oxide layer decreased. In the case of a high fluence, the retained amount of deuterium became comparable to that of ferritic steel with mechanical polish or SS 316L, and one order of magnitude smaller than that of graphite. When the ferritic steel is used, it is required to remove the surface oxide layer for reduction of fuel hydrogen retention. Ferritic steel sample was

  14. ECR Plasma Photos

    International Nuclear Information System (INIS)

    Complete text of publication follows. In order to observe and study systematically the plasma of electron cyclotron resonance (ECR) ion sources (ECRIS) we made a high number of high-resolution visible light plasma photos and movies in the ATOMKI ECRIS Laboratory. This required building the ECR ion source into an open plasma device, temporarily. An 8MP digital camera was used to record photos of plasmas made from He, methane, N, O, Ne, Ar, Kr, Xe gases and from their mixtures. The effects of the main external setting parameters (gas pressure, gas composition, magnetic field, microwave power, microwave frequency) were studied to the shape, color and structure of the plasma. The double frequency mode (9+14 GHz) was also realized and photos of this special 'star-in-star' shape plasma were recorded. A study was performed to analyze and understand the color of the ECR plasmas. The analysis of the photo series gave us many qualitative and numerous valuable physical information on the nature of ECR plasmas. To our best knowledge our work is the first systematic study of ECR plasmas in the visible light region. When looking in the plasma chamber of an ECRIS we can see an axial image of the plasma (figure 1) in conformity with experimental setup. Most of the quantitative information was obtained through the summarised values of the Analogue Digital Unit (ADU) of pixels. By decreasing the strength of the magnetic trap we clearly observed that the brightness of the central part of the plasma gradually decreases, i.e. the plasma becomes more and more 'empty'. Figure 2 shows a photo series of ECR plasma at decreasing axial magnetic field. The radial size of the plasma increased because of the ascendant resonant zone. By increasing the power of the injected microwave an optimum (or at least saturation) was found in the brightness of the plasma. We found correlation between the gas dosing rates and plasma intensities. When sweeping the frequency of the microwave in a wide region

  15. Energy-exchange collisions of dark-bright-bright vector solitons.

    Science.gov (United States)

    Radhakrishnan, R; Manikandan, N; Aravinthan, K

    2015-12-01

    We find a dark component guiding the practically interesting bright-bright vector one-soliton to two different parametric domains giving rise to different physical situations by constructing a more general form of three-component dark-bright-bright mixed vector one-soliton solution of the generalized Manakov model with nine free real parameters. Moreover our main investigation of the collision dynamics of such mixed vector solitons by constructing the multisoliton solution of the generalized Manakov model with the help of Hirota technique reveals that the dark-bright-bright vector two-soliton supports energy-exchange collision dynamics. In particular the dark component preserves its initial form and the energy-exchange collision property of the bright-bright vector two-soliton solution of the Manakov model during collision. In addition the interactions between bound state dark-bright-bright vector solitons reveal oscillations in their amplitudes. A similar kind of breathing effect was also experimentally observed in the Bose-Einstein condensates. Some possible ways are theoretically suggested not only to control this breathing effect but also to manage the beating, bouncing, jumping, and attraction effects in the collision dynamics of dark-bright-bright vector solitons. The role of multiple free parameters in our solution is examined to define polarization vector, envelope speed, envelope width, envelope amplitude, grayness, and complex modulation of our solution. It is interesting to note that the polarization vector of our mixed vector one-soliton evolves in sphere or hyperboloid depending upon the initial parametric choices. PMID:26764780

  16. Energy-exchange collisions of dark-bright-bright vector solitons

    Science.gov (United States)

    Radhakrishnan, R.; Manikandan, N.; Aravinthan, K.

    2015-12-01

    We find a dark component guiding the practically interesting bright-bright vector one-soliton to two different parametric domains giving rise to different physical situations by constructing a more general form of three-component dark-bright-bright mixed vector one-soliton solution of the generalized Manakov model with nine free real parameters. Moreover our main investigation of the collision dynamics of such mixed vector solitons by constructing the multisoliton solution of the generalized Manakov model with the help of Hirota technique reveals that the dark-bright-bright vector two-soliton supports energy-exchange collision dynamics. In particular the dark component preserves its initial form and the energy-exchange collision property of the bright-bright vector two-soliton solution of the Manakov model during collision. In addition the interactions between bound state dark-bright-bright vector solitons reveal oscillations in their amplitudes. A similar kind of breathing effect was also experimentally observed in the Bose-Einstein condensates. Some possible ways are theoretically suggested not only to control this breathing effect but also to manage the beating, bouncing, jumping, and attraction effects in the collision dynamics of dark-bright-bright vector solitons. The role of multiple free parameters in our solution is examined to define polarization vector, envelope speed, envelope width, envelope amplitude, grayness, and complex modulation of our solution. It is interesting to note that the polarization vector of our mixed vector one-soliton evolves in sphere or hyperboloid depending upon the initial parametric choices.

  17. Thin films preparation of the Ti-Al-O system by rf-sputtering;Preparacion de peliculas delgadas del sistema Ti-Al-O mediante rf-sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Montes de Oca, J. A.; Ceballos A, J.; Galaviz P, J. [IPN, Centro de Investigacion en Ciencia Aplicada y Tecnologia Avanzada, Unidad Altamira, Km 14.5 Carretera Tampico-Puerto Industrial Altamira, 89600 Altamira, Tamaulipas (Mexico); Manaud, J. P.; Lahaye, M. [Centre National de la Recherche Scientifique, Institut de Chimie de la Matiere Condensee, Universite Bordeaux I, 87, Av. du Dr. Schweitzer, F-33608 Pessac-Cedex (France); Munoz S, J., E-mail: jmontedeocacv@ipn.m [IPN, Centro de Investigacion y de Estudios Avanzados, Unidad Queretaro, Libramiento Norponiente No. 2000, Fracc. Real de Juriquilla, 76230 Santiago de Queretaro, Qro. (Mexico)

    2010-07-01

    In the present work Ti-Al-O thin films were synthesized by rf-sputtering technique on glass and silicon (Si) substrates using Ti Al and Ti{sub 3}Al targets in a sputtering chamber with an Ar-O{sub 2} atmosphere. Ti-Al-O thin films were obtained varying experimental parameters such as oxygen percent fed to the reaction chamber, plasma power density and substrate temperature. The films deposited on glass substrates were used to evaluate their optical properties, while those deposited on Si substrates were used to evaluate mechanical and morphological properties. The crystalline structure, morphology, chemical composition and optical properties of the films were evaluated by X-ray diffraction, high-resolution scanning electron microscopy, Auger electron microscopy and visible UV spectroscopy. Films thicknesses were measured using a profiler. The roughness and mechanical properties such as hardness and Young modulus were analyzed by atomic force microscopy and nano indentation technique, respectively. (Author)

  18. Nylon-sputtered nanoparticles: fabrication and basic properties

    Science.gov (United States)

    Polonskyi, O.; Kylián, O.; Solař, P.; Artemenko, A.; Kousal, J.; Slavínská, D.; Choukourov, A.; Biederman, H.

    2012-12-01

    Nylon-sputtered nanoparticles were prepared using a simple gas aggregation cluster source based on a planar magnetron (Haberland type) and equipped with a nylon target. Plasma polymer particles originated in an aggregation chamber and travelled to a main (deposition) chamber with a gas flow through an orifice. The deposited nanoparticles were observed to have a cauliflower-like structure. The nanoparticles were found to be nitrogen-rich with N/C ratio close to 0.5. An increase in rf power from 60 to 100 W resulted in a decrease in mean particle size from 210 to 168 nm whereas an increase in their residence time in the cluster source from 0.7 to 4.6 s resulted in an increase in the size from 73 to 231 nm.

  19. Nylon-sputtered nanoparticles: fabrication and basic properties

    International Nuclear Information System (INIS)

    Nylon-sputtered nanoparticles were prepared using a simple gas aggregation cluster source based on a planar magnetron (Haberland type) and equipped with a nylon target. Plasma polymer particles originated in an aggregation chamber and travelled to a main (deposition) chamber with a gas flow through an orifice. The deposited nanoparticles were observed to have a cauliflower-like structure. The nanoparticles were found to be nitrogen-rich with N/C ratio close to 0.5. An increase in rf power from 60 to 100 W resulted in a decrease in mean particle size from 210 to 168 nm whereas an increase in their residence time in the cluster source from 0.7 to 4.6 s resulted in an increase in the size from 73 to 231 nm.

  20. Sputtering of Lunar Regolith by Solar Wind Protons and Heavy Ions, and General Aspects of Potential Sputtering

    Science.gov (United States)

    Alnussirat, S. T.; Sabra, M. S.; Barghouty, A. F.; Rickman, Douglas L.; Meyer, F.

    2014-01-01

    New simulation results for the sputtering of lunar soil surface by solar-wind protons and heavy ions will be presented. Previous simulation results showed that the sputtering process has significant effects and plays an important role in changing the surface chemical composition, setting the erosion rate and the sputtering process timescale. In this new work and in light of recent data, we briefly present some theoretical models which have been developed to describe the sputtering process and compare their results with recent calculation to investigate and differentiate the roles and the contributions of potential (or electrodynamic) sputtering from the standard (or kinetic) sputtering.

  1. Magnetron sputtered lithium niobate films

    International Nuclear Information System (INIS)

    The preparation of lithium niobate films on Corning 7059 glass by rf planar magnetron sputtering in an Ar + 40% 02 mixture has been studied at 2 mtorr. Films deposited on unheated substrates became crazed by release of a tensile stress arising from the difference between the expansion coefficient of the glass and the coating. Improvement of surface cleanliness by discharge cleaning or solvent degreasing using iso-propyl alcohol in a Soxhlet extractor enhanced the film/substrate adhesion. This prevented crazing, but the transparent films produced were still under stress. Glass surfaces cleaned sufficiently for high film adhesion had a coefficient of static friction, glass on glass, of greater than of the order of 0.8. A lithium niobate powder target was used because the uneven heating arising from magnetron discharge localization resulted in fracture of single crystal material. Care was taken to remove all water vapour from the discharge atmosphere using liquid nitrogen traps, for without these the coatings produced were optically absorbing, due to oxide reduction, presumably formed by an active hydrogen reaction. The refractive index of the films, as determined from their waveguiding characteristics, was in the region of 2.10-2.20. Trial coatings grown at 380degC and above had indices in the region of 2.19; these high temperature films were also transparent but under tensile stress. The growth rates ranged from 9.5 A min-1 for a substrate temperature of 3800C to 11.5 A min-1 for a substrate temperature of 4700C. (author)

  2. Computer simulation of sputtering: A review

    International Nuclear Information System (INIS)

    In 1986, H. H. Andersen reviewed attempts to understand sputtering by computer simulation and identified several areas where further research was needed: potential energy functions for molecular dynamics (MD) modelling; the role of inelastic effects on sputtering, especially near the target surface; the modelling of surface binding in models based on the binary collision approximation (BCA); aspects of cluster emission in MD models; and angular distributions of sputtered particles. To these may be added kinetic energy distributions of sputtered particles and the relationships between MD and BCA models, as well as the development of intermediate models. Many of these topics are discussed. Recent advances in BCA modelling include the explicit evaluation of the time in strict BCA codes and the development of intermediate codes able to simulate certain many-particle problems realistically. Developments in MD modelling include the wide-spread use of many-body potentials in sputtering calculations, inclusion of realistic electron excitation and electron-phonon interactions, and several studies of cluster ion impacts on solid surfaces

  3. Sputtering of amorphous silicon nitride irradiated with energetic C60 ions: Preferential sputtering and synergy effect between electronic and collisional sputtering

    Science.gov (United States)

    Kitayama, T.; Morita, Y.; Nakajima, K.; Narumi, K.; Saitoh, Y.; Matsuda, M.; Sataka, M.; Toulemonde, M.; Kimura, K.

    2015-12-01

    Amorphous silicon nitride films (thickness 30 nm) deposited on Si(0 0 1) were irradiated with 30-1080 keV C60 and 100 MeV Xe ions to fluences ranging from 2 × 1011 to 1 × 1014 ions/cm2. The composition depth profiles of the irradiated samples were measured using high-resolution Rutherford backscattering spectrometry. The sputtering yields were estimated from the derived composition profiles. Pronounced preferential sputtering of nitrogen was observed in the electronic energy loss regime. In addition, a large synergy effect between the electronic and collisional sputtering was also observed. The sputtering yields were calculated using the unified thermal spike model to understand the observed results. Although the calculated results reproduced the observed total sputtering yields with a lowered sublimation energy, the observed preferential sputtering of nitrogen could not be explained. The present results suggest an additional sputtering mechanism related to the electronic energy loss.

  4. Physical sputtering of metallic systems by charged-particle impact

    International Nuclear Information System (INIS)

    The present paper provides a brief overview of our current understanding of physical sputtering by charged-particle impact, with the emphasis on sputtering of metals and alloys under bombardment with particles that produce knock-on collisions. Fundamental aspects of ion-solid interactions, and recent developments in the study of sputtering of elemental targets and preferential sputtering in multicomponent materials are reviewed. We concentrate only on a few specific topics of sputter emission, including the various properties of the sputtered flux and depth of origin, and on connections between sputtering and other radiation-induced and -enhanced phenomena that modify the near-surface composition of the target. The synergistic effects of these diverse processes in changing the composition of the integrated sputtered-atom flux is described in simple physical terms, using selected examples of recent important progress. 325 refs., 27 figs

  5. Possibility to Use Low Temperature Pulsed RF Sputtered Indium Tin Oxide for the Fabrication of Organic Solar Cell

    OpenAIRE

    Partha Pratim Ray; Animesh Layek; Somnath Middya

    2013-01-01

    In this work we have used pulsed RF sputtering method to deposit indium tin oxide (ITO) for the fabrication of P3HT:PCBM based bulk heterojunction polymer solar cell. We have deposited ITO at low substrate temperature (100°C) and for different pulse modes. Oxygen was used as an admixture to the sputtering gas argon, and the percentage was varied from 0 to 6%. During deposition, plasma was studied by optical emission spectroscopy (OES) method. For our present range of deposition conditions low...

  6. Sputtering and mixing of supported nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Jiménez-Sáez, J.C., E-mail: jc.jimenez@upm.es [Dept. Física y Química Aplicadas a la Técnica Aeronaútica, ETSIAE, Universidad Politécnica de Madrid (UPM), 28040 Madrid (Spain); Pérez-Martín, A.M.C.; Jiménez-Rodríguez, J.J. [Dept. Física Aplicada III (Electricidad y Electrónica), Facultad de Ciencias Físicas, Universidad Complutense de Madrid (UCM), 28040 Madrid (Spain)

    2013-12-01

    Sputtering and mixing of Co nanoparticles supported in Cu(0 0 1) under 1-keV argon bombardment are studied using molecular-dynamics simulations. Particles of different initial size have been considered. The cluster height decreases exponentially with increasing fluence. In nanoparticles, sputtering yield is significantly enhanced compared to bulk. In fact, the value of this magnitude depends on the cluster height. A theoretical model for sputtering is introduced with acceptable results compared to those obtained by simulation. Discrepancies happen mainly for very small particles. Mixing rate at the interface is quantified; and besides, the influence of border effects for clusters of different initial size is assessed. Mixing rate and border length–surface area ratio for the initial interface show a proportionality relation. The phenomenon of ion-induced burrowing of metallic nanoparticles is analysed.

  7. Electrochemical Behaviour of Sputtering Deposited DLC Films

    Institute of Scientific and Technical Information of China (English)

    LIUErjia; ZENGA; LIULX

    2003-01-01

    Diamondlike carbon (DLC) films were deposited via magnetron sputtering process. The energetic ion hombardment on the surface of growing film is one of the major parameters that control the atom mobility on the flirt1 surface and further the physical and chemical characteristics of the films. In this study, the energy of carbon ions was monitored by changing sputtering powerdensity, and its effect on the electrochemical performance of the films was investigated. For the deposition at a higher sputtering power density, a higher sp3 content in the DLC films was achieved with denser structure and increased film-substrate adhesion. The impedance at the interface of Si substrate/sulfufic acid solution was significantly enhanced, and at the same time higher film resistance, lower capacitance, higher breakdown potential and longer breakdown time were observed, which were related to the significant sp3 content of the DLC films.

  8. Electrochemical Behaviour of Sputtering Deposited DLC Films

    Institute of Scientific and Technical Information of China (English)

    LIU Erjia; ZENG A,LIU L X

    2003-01-01

    Diamondlike carbon (DLC) films were deposited via magnetron sputtering process. The energetic ion bombardment on the surface of growing film is one of the major parameters that control the atom mobility on the film surface and further the physical and chemical characteristics of the films. In this study, the energy of carbon ions was monitored by changing sputtering power density, and its effect on the electrochemical performance of the films was investigated. For the deposition at a higher sputtering power density, a higher sp3 content in the DLC films was achieved with denser structure and increased film-substrate adhesion. The impedance at the interface of Si substrate/sulfuric acid solution was significantly enhanced, and at the same time higher film resistance, lower capacitance, higher breakdown potential and longer breakdown time were observed, which were related to the significant sp3 content of the DLC films.

  9. Surface analysis by glow discharge spectrometry: cathode zone and sputtering yield

    International Nuclear Information System (INIS)

    Applications of the glow discharge optical spectroscopy for surface analysis are numerous. Moreover, this method enables to get qualitative and semi-quantitative results which are already significant. However, we should improve our knowledge of the physical parameters involved in the glow discharge lamp mechanisms and learn to handle such phenomena. The problems can be divided into two categories: sputtering of the target under argon ions accelerated in the cathode dark space, and luminous emission of torn away species which reach the negative glow region. Our aim was to take stock of the present theoretical knowledge which can be applied to the specific self-maintained glow discharge plasma. Moreover, we tried to link together (often roughly) the basic discharge parameters, i.e. current intensity I, voltage of the lamp Vg, pressure of the gas p. Specially a comparison between theoretical and experimental results was established concerning the pure target sputtering yields. The contribution of the argon ions striking the cathode is estimated taking into account their energetic distribution. The role of the fast argon neutrals produced by charge exchange with the ions is important; we evaluated their energetic distribution and their contribution to sputtering. The total theoretical sputtering yield is inferred: the comparison with experimental results is presented. The role of the gas temperature is emphasized

  10. Measurements and modeling of D, He and Li sputtering of liquid lithium

    International Nuclear Information System (INIS)

    The absolute sputtering yields of D+, He+ and Li+ on solid lithium have been measured and modeled at low energies in the ion-surface interaction experiment (IIAX). The experiment has been extended to measure physical sputtering from liquid lithium surfaces bombarded by D+, He+ and Li+. A Colutron ion source is used to create and accelerate gaseous or metal ions onto the liquid metal target. A plasma cup removes any oxides and saturates the surface with deuterium. A small high-temperature, HV substrate heater is used to heat the 0.76 g lithium sample past its melting point to 200 deg. C. Upon melting, a thin oxide layer is formed on the exposed lithium surface, which is cleaved by an in situ arm rotated in front of the target. Results suggest that the absolute sputtering yield of lithium is less than unity. In addition, the behavior of liquid lithium self-sputtering suggests stratification of the top liquid metal surface. This is consistent with VFTRIM-3D modeling, where D atoms migrate into the bulk while the first few monolayers remain mostly lithium

  11. Influence and determinative factors of ion-to-atom arrival ratio in unbalanced magnetron sputtering systems

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    Low pressure sputtering with a controlled ratio of ion flux to deposited atom flux at the condensing surface is one of the main directions of development of magnetron sputtering methods.Unbalanced magnetron sputtering,by producing dense secondary plasma around the substrate,provides a high ion current density.The closed-field unbalanced magnetron sputtering system (CFUBMS) has been established as a versatile technique for high-rate deposition high-quality metal,alloy,and ceramic thin films.The key factor in the CFUBMS system is the ability to transport high ion currents to the substrate,which can enhance the formation of full dense coatings at relatively low value homologous temperature.The investigation shows that the energy of ions incidenced at the substrate and the ratio of the flux of these ions to the flux of condensing atoms are the fundamental parameters in determining the structure and properties of films produced by ion-assisted deposition processes.Increasing ion bombardment during deposition combined with increasing mobility of the condensing atoms favors the formation of a dense microstructure and a smooth surface.

  12. Experimental investigation of the energy and temperature dependence of beryllium self sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Korshunov, S.N.; Guseva, M.I.; Stolijarova, V.G. [RRC Kurchatov Institute, Moscow (Russian Federation)

    1995-09-01

    The low-Z metal beryllium is considered as plasma facing material (PFM) for the ITER. It is expected that operation temperature range of beryllium PFM will be (670 - 1070) K. While experimental Be-sputtering data bases exist for H{sup +}, D{sup +} and He{sup +}-ions, the self-sputtering yields of Be have only been estimated by computer simulation. In this paper we report the experimental results on the energy and temperature dependence of the beryllium self-sputtering yield (S). The energy dependence of S{sup s} in the energy range (0.5 - 10.0) keV was measured at 670 K. The self-sputtering yield of Be attains its maximal value at the ion energy of 1.5 keV, being equal to 0.32 {+-} at./ion. Comparison of the experimental results and theoretical prediction shows a good agreement for energy dependence of S{sup s}. The temperature dependence of S{sup s} in the temperature range (370-1070)K was obtained for 0.9keV Be{sup +}-ions. The value of S{sup s} is not changed up to 870 K. It sharply increases at the temperatures above 870 attaining the value of 0.75 at./ion at 1070 K.

  13. Plasma-wall interactions

    International Nuclear Information System (INIS)

    The plasma wall interactions for two extreme cases, the 'vacuum model' and the 'cold gas blanket' are outlined. As a first step for understanding the plasma wall interactions the elementary interaction processes at the first wall are identified. These are energetic ion and neutral particle trapping and release, ion and neutral backscattering, ion sputtering, desorption by ions, photons and electrons and evaporation. These processes have only recently been started to be investigated in the parameter range of interest for fusion research. The few measured data and their extrapolation into regions not yet investigated are reviewed

  14. Alfvén's critical ionization velocity observed in high power impulse magnetron sputtering discharges

    International Nuclear Information System (INIS)

    Azimuthally rotating dense plasma structures, spokes, have recently been detected in several high power impulse magnetron sputtering (HiPIMS) devices used for thin film deposition and surface treatment, and are thought to be important for plasma buildup, energizing of electrons, as well as cross-B transport of charged particles. In this work, the drift velocities of these spokes are shown to be strongly correlated with the critical ionization velocity, CIV, proposed by Alfvén. It is proposed as the most promising approach in combining the CIV and HiPIMS research fields is to focus on the role of spokes in the process of electron energization.

  15. The sputter generation of negative ion beams

    International Nuclear Information System (INIS)

    A brief review is given of recent progress toward a quantitative understanding of negative ion formation by sputtering from surfaces covered with fractional layers of highly electropositive adsorbates. Practical models developed for estimating changes in work functions Δφ by electropositive adsorbates are described. The secondary negative ion generation process is examined through the use of composite energy/velocity dependent analytical models. These models are used to illustrate the effect of work function on the energy distributions of negative ions sputter ejected from a polycrystalline molybdenum surface covered with fractional layers of cesium. Predictions are also made of the functional dependence of the probability for negative ion formation on cesium coverage. The models predict energy distributions which are in basic disagreement with experimental observations, implying their inappropriateness for describing the sputter negative ion generation process. We have also developed a model for calculating sputter ratios based on the use of simple scaling procedures to bring Sigmund theory into close agreement with experimental observation accounting for the threshold effect. Scaling factors for projectile energies E > 1000 eV are found to be independent of energy while those for projectile energies Eth < E < 1000 eV were found to be energy dependent. In this study, the model and scaling techniques utilized to bring Sigmund theory into agreement with experiment are discussed in detail and several examples provided which illustrate the versatility, accuracy and utility of the model. In the present report, we describe the model and apply it to the case of sputtering a selected number of metals with energetic cesium ions. In particular, we present sputter ratio information for a number of Cs-projectile/metal-target combinations; the targets are bombarded at normal incidence to the surface

  16. Multifunctional bulk plasma source based on discharge with electron injection.

    Science.gov (United States)

    Klimov, A S; Medovnik, A V; Tyunkov, A V; Savkin, K P; Shandrikov, M V; Vizir, A V

    2013-01-01

    A bulk plasma source, based on a high-current dc glow discharge with electron injection, is described. Electron injection and some special design features of the plasma arc emitter provide a plasma source with very long periods between maintenance down-times and a long overall lifetime. The source uses a sectioned sputter-electrode array with six individual sputter targets, each of which can be independently biased. This discharge assembly configuration provides multifunctional operation, including plasma generation from different gases (argon, nitrogen, oxygen, acetylene) and deposition of composite metal nitride and oxide coatings. PMID:23387642

  17. Spectroscopic Surface Brightness Fluctuations: Amplifying Bright Stars in Unresolved Stellar Populations

    Science.gov (United States)

    Mitzkus, M.; Dreizler, S.; Roth, M. M.

    2015-08-01

    We report on our early-stage efforts to resolve the Surface Brightness Fluctuations (SBFs) in the spectral dimension. Combining the diagnostic power of SBFs with the physical information content of spectra seems a tempting possibility to gain new insights into the bright stars in unresolved stellar populations. The new VLT integral field spectrograph MUSE is the first instrument that enables spectroscopic SBFs observationally.

  18. Qualitative criterion for atom sputtering angle distributions

    International Nuclear Information System (INIS)

    A model is introduced to explain the shape of atom polar emission angle distributions for monocomponent targets sputtered by normally incident keV - energy ions. Analytical expressions are obtained from the model which make it possible to identify three known kinds of the angle distributions - subcosinus, isotropic and supracosinus, for given ion energies and target-ion pairs. Furthermore the fourth, hybrid false-isotropic distribution is found, which is superposition of supracosinus and subcosinus distributions. The theoretical predictions of the angle distributions shape agree with the numerical modeling for sputtering of carbon and platinum by 0.1-10 keV Ar+ ions

  19. Sputtering of indium using polyatomic projectiles

    Energy Technology Data Exchange (ETDEWEB)

    Samartsev, A.V.; Wucher, A

    2004-06-15

    We have investigated the emission of neutral and charged particles from a polycrystalline indium surface under bombardment with Au, Au{sub 2}, Au{sub 3}, Au{sub 5} and AuCs{sub 2} projectiles with energies between 5 and 10 keV. Sputtered neutral species were postionized by means of saturated single photon ionization, thus characterizing the respective partial sputtering yields. The ionization probability of the emitted species was addressed by measuring the respective secondary ion signals under the same experimental conditions. It is seen that the relative cluster yields are enhanced under polyatomic projectile bombardment, while the ionization probability of In atoms seems to be largely unaffected.

  20. Collimated Magnetron Sputter Deposition for Mirror Coatings

    DEFF Research Database (Denmark)

    Vickery, A.; Cooper-Jensen, Carsten P.; Christensen, Finn Erland;

    2008-01-01

    At the Danish National Space Center (DNSC), a planar magnetron sputtering chamber has been established as a research and production coating facility for curved X-ray mirrors for hard X-ray optics for astronomical X-ray telescopes. In the following, we present experimental evidence that a collimat......At the Danish National Space Center (DNSC), a planar magnetron sputtering chamber has been established as a research and production coating facility for curved X-ray mirrors for hard X-ray optics for astronomical X-ray telescopes. In the following, we present experimental evidence that a...

  1. Bright source lasers and experiments at very high irradiance

    International Nuclear Information System (INIS)

    The Los Alamos Bright Source has been assembled to explore the effects of intense coherent ultraviolet radiation on matter. This ultra-high brightness excimer laser is used to study the response of atoms, ions, and plasmas to the unique conditions the laser can provide. Primary areas of interest include properties and behavior of highly energetic atomic species, studies of possible intense field-induced nuclear transitions, pumping for x-ray lasers, and incoherent x-ray sources. The project consists of two phases: Los Alamos Bright Source I (LABS I) that is now in operation and is producing experimental data at an intensity up to 7 x 1017 watts/cm2 with 25 mJ of radiation and LABS II that will deliver between .1 and 1 J at an intensity of 1018 to 1020 w/cm2. At these high intensities we observe collisionless excitations to the KeV level. The exact nature of the excitation process is not known and is itself part of the investigation. Because of the coherent nature of the pump and the very large fields obtainable, new regimes of optical excitation can be expected and examined. Work is underway with LABS I to produce highly ionized species and measure their spectral and other properties. This equipment has proven to be highly reliable in the last year and should afford the opportunity for many basic studies. LABS II with its increased pulse energy and intensity will support studies involving larger pump volume and higher excitation levels. It should serve as a test bed for studies of pumping schemes for x-ray lasers. 6 refs., 8 figs., 3 tabs

  2. Observing Faint Companions Close to Bright Stars

    Science.gov (United States)

    Serabyn, Eugene

    2012-04-01

    Progress in a number of technical areas is enabling imaging and interferometric observations at both smaller angular separations from bright stars and at deeper relative contrast levels. Here we discuss recent progress in several ongoing projects at the Jet Propulsion Laboratory. First, extreme adaptive optics wavefront correction has recently enabled the use of very short (i.e., blue) wavelengths to resolve close binaries. Second, phase-based coronagraphy has recently allowed observations of faint companions to within nearly one diffraction beam width of bright stars. Finally, rotating interferometers that can observe inside the diffraction beam of single aperture telescopes are being developed to detect close-in companions and bright exozodiacal dust. This paper presents a very brief summary of the techniques involved, along with some illustrative results.

  3. High brightness semiconductor lasers with reduced filamentation

    DEFF Research Database (Denmark)

    McInerney, John; O'Brien, Peter.; Skovgaard, Peter M. W.; Houlihan, John; Mullane, Mark; O'Neill, Eamonn

    High brightness semiconductor lasers have applications in spectroscopy, fiber lasers, manufacturing and materials processing, medicine and free space communication or energy transfer. The main difficulty associated with high brightness is that, because of COD, high power requires a large aperture....... Large apertures result in high order transverse modes, filamentation and spatio-temporal instabilities, all of which degrade spatial coherence and therefore brightness. We shall describe a combined assault on three fronts: (1) minimise aperture size required for a given power by maximising the facet...... damage threshold, (2) for a given aperture, minimise self-focusing and filamentation by minimising the effective nonlinear coefficient (the alpha parameter), and (3) for a given aperture and nonlinear coefficient, develop optical cavities and propagation structures to suppress filamentation and high...

  4. High brightness semiconductor lasers with reduced filamentation

    DEFF Research Database (Denmark)

    McInerney, John; O'Brien, Peter.; Skovgaard, Peter M. W.;

    1999-01-01

    High brightness semiconductor lasers have applications in spectroscopy, fiber lasers, manufacturing and materials processing, medicine and free space communication or energy transfer. The main difficulty associated with high brightness is that, because of COD, high power requires a large aperture....... Large apertures result in high order transverse modes, filamentation and spatio-temporal instabilities, all of which degrade spatial coherence and therefore brightness. We shall describe a combined assault on three fronts: (1) minimise aperture size required for a given power by maximising the facet...... damage threshold, (2) for a given aperture, minimise self-focusing and filamentation by minimising the effective nonlinear coefficient (the alpha parameter), and (3) for a given aperture and nonlinear coefficient, develop optical cavities and propagation structures to suppress filamentation and high...

  5. Increasing the brightness of light sources

    Energy Technology Data Exchange (ETDEWEB)

    Fu, Ling

    2006-11-16

    In this work the principle of light recycling is applied to artificial light sources in order to achieve brightness enhancement. Firstly, the feasibilities of increasing the brightness of light sources via light recycling are examined theoretically, based on the fundamental laws of thermodynamics including Kirchhoff's law on radiation, Planck's law, Lambert-Beer's law, the etendue conservation and the brightness theorem. From an experimental viewpoint, the radiation properties of three different kinds of light sources including short-arc lamps, incandescent lamps and LEDs characterized by their light-generating mechanisms are investigated. These three types of sources are used in light recycling experiments, for the purpose of 1. validating the intrinsic light recycling effect in light sources, e. g. the intrinsic light recycling effect in incandescent lamps stemming from the coiled filament structure. 2. acquiring the required parameters for establishing physical models, e.g. the emissivity/absorptivity of the short-arc lamps, the intrinsic reflectivity and the external quantum efficiency of LEDs. 3. laying the foundations for designing optics aimed at brightness enhancement according to the characteristics of the sources and applications. Based on the fundamental laws and experiments, two physical models for simulating the radiance distribution of light sources are established, one for thermal filament lamps, the other for luminescent sources, LEDs. As validation of the theoretical and experimental investigation of the light recycling effect, an optical device, the Carambola, is designed for achieving deterministic and multiple light recycling. The Carambola has the function of a concentrator. In order to achieve the maximum possible brightness enhancement with the Carambola, several combinations of sources and Carambolas are modelled in ray-tracing simulations. Sources with different light-emitting mechanisms and different radiation properties

  6. Bright Flares in Supergiant Fast X-ray Transients

    CERN Document Server

    Shakura, N; Sidoli, L; Paizis, A

    2014-01-01

    At steady low-luminosity states, Supergiant Fast X-ray Transients (SFXTs) can be at the stage of quasi-spherical settling accretion onto slowly rotating magnetized NS from the OB-companion winds. At this stage, a hot quasi-static shell is formed above the magnetosphere, the plasma entry rate into magnetosphere is controlled by (inefficient) radiative plasma cooling, and the accretion rate onto the NS is suppressed by a factor of \\sim 30 relative to the Bondi-Hoyle-Littleton value. Changes in the local wind velocity and density can only slightly increase the mass accretion rate (a factor of \\sim 10) bringing the system into the Compton cooling dominated regime and led to the production of moderately bright flares (L_x\\lesssim 10^{36} erg/s). To interpret the brightest flares (L_x>10^{36}~erg/s) displayed by the SFXTs, we propose that a larger increase in the mass accretion rate can be produced by sporadic capture of magnetized stellar wind plasma. At sufficiently low accretion rates, magnetic reconnection can ...

  7. The historical investigation of cometary brightness

    Science.gov (United States)

    Hughes, David W.

    1998-12-01

    The interpretation of the way in which the brightness of a comet varied as a function of both its heliocentric and geocentric distance was essentially started by Isaac Newton in his book Philosophiae Naturalis Principia Mathematica, published in 1687. Astronomers have argued about the form of this variability ever since, and for many years it was regarded as an important clue as to the physical nature of the cometary nucleus and its decay process. This paper reviews our understanding of the causes of cometary brightness variability between about 1680 and the 1950s.

  8. The environment of Low Surface Brightness Galaxies

    OpenAIRE

    Rosenbaum, S. D.; Bomans, D. J.

    2004-01-01

    Using the Early Data Release of the Sloan Digital Sky Survey (SDSS) we investigated the clustering properties of Low Surface Brightness (LSB) galaxies in comparison to normal, High Surface Brightness (HSB) galaxies. We selected LSB galaxies and HSB galaxies with well measured redshifts from the SDSS data base and performed three-dimensional neighbour counting analysis within spheres of radii between 0.8 Mpc and 8.0 Mpc. As a second analysis method we used an N-th neighbour analysis with N var...

  9. Discovery program for bright quasars: preliminary results

    International Nuclear Information System (INIS)

    A program has been undertaken to obtain a complete sample of bright quasars on the basis of ultraviolet color excess. Spectroscopic examination of candidates selected from two-color Schmidt telescope films has yielded four new quasars brighter than B = 16/sup m/5, with the candidate list containing two more previously identified. Magnitudes, color indices, and redshifts are presented for the new discoveries, along with positions and finding charts. Although the sample is not yet complete, these first results suggest that bright quasars have a low surface density

  10. Current density distributions and sputter marks in electron cyclotron resonance ion sources

    International Nuclear Information System (INIS)

    Most electron cyclotron resonance ion sources use hexapolar magnetic fields for the radial confinement of the plasma. The geometry of this magnetic structure is then—induced by charged particles—mapped onto the inner side of the plasma electrode via sputtering and deposition. The resulting structures usually show two different patterns: a sharp triangular one in the central region which in some cases is even sputtered deep into the material (referred to as thin groove or sharp structure), and a blurred but still triangular-like one in the surroundings (referred to as broad halo). Therefore, both patterns seem to have different sources. To investigate their origins we replaced the standard plasma electrode by a custom-built plasma electrode acting as a planar, multi-segment current-detector. For different biased disc voltages, detector positions, and source biases (referred to the detector) we measured the electrical current density distributions in the plane of the plasma electrode. The results show a strong and sharply confined electron population with triangular shape surrounded by less intense and spatially less confined ions. Observed sputter- and deposition marks are related to the analysis of the results. Our measurements suggest that the two different patterns (thin and broad) indeed originate from different particle populations. The thin structures seem to be caused by the hot electron population while the broad marks seem to stem from the medium to highly charged ions. In this paper we present our measurements together with theoretical considerations and substantiate the conclusions drawn above. The validity of these results is also discussed.

  11. Current density distributions and sputter marks in electron cyclotron resonance ion sources.

    Science.gov (United States)

    Panitzsch, Lauri; Peleikis, Thies; Böttcher, Stephan; Stalder, Michael; Wimmer-Schweingruber, Robert F

    2013-01-01

    Most electron cyclotron resonance ion sources use hexapolar magnetic fields for the radial confinement of the plasma. The geometry of this magnetic structure is then--induced by charged particles--mapped onto the inner side of the plasma electrode via sputtering and deposition. The resulting structures usually show two different patterns: a sharp triangular one in the central region which in some cases is even sputtered deep into the material (referred to as thin groove or sharp structure), and a blurred but still triangular-like one in the surroundings (referred to as broad halo). Therefore, both patterns seem to have different sources. To investigate their origins we replaced the standard plasma electrode by a custom-built plasma electrode acting as a planar, multi-segment current-detector. For different biased disc voltages, detector positions, and source biases (referred to the detector) we measured the electrical current density distributions in the plane of the plasma electrode. The results show a strong and sharply confined electron population with triangular shape surrounded by less intense and spatially less confined ions. Observed sputter- and deposition marks are related to the analysis of the results. Our measurements suggest that the two different patterns (thin and broad) indeed originate from different particle populations. The thin structures seem to be caused by the hot electron population while the broad marks seem to stem from the medium to highly charged ions. In this paper we present our measurements together with theoretical considerations and substantiate the conclusions drawn above. The validity of these results is also discussed. PMID:23387638

  12. Aluminum oxide sputtering: a new approach to understanding the sputtering process for binary targets

    International Nuclear Information System (INIS)

    The relative abundances of the products Al, Al2O, and AlO sputtered in 15- and 40-kV Ar+ and 15-kV H+ bombardments of aluminum oxide targets (anodized film, polycrystalline disk, sapphire) are functions of the target material and of the nature, flux, and fluence of the ion beam. This finding suggests that, in collisional sputtering, the material's sensitive parameters are the surface binding energies of the sputtered species. These energies are functions of the surface composition present at the moment of a particular sputtering event and should be identified with the partial molar enthalpy of vaporization of a particular species. The aluminum oxide species--Al, Al2O, AlO, Al2O2, AlO2, Al(O2)2, and AlO3--are characterized by matrix isolation spectroscopy aided by O18 isotopic substitution experiments. 12 figures, 4 tables

  13. Lithium insertion in sputtered vanadium oxide film

    DEFF Research Database (Denmark)

    West, K.; Zachau-Christiansen, B.; Skaarup, S.V.;

    1992-01-01

    were oxygen deficient compared to V2O5. Films prepared in pure argon were reduced to V(4) or lower. The vanadium oxide films were tested in solid-state lithium cells. Films sputtered in oxygen showed electrochemical properties similar to crystalline V2O5. The main differences are a decreased capacity...

  14. Sputtering of Surfaces of the Solid Hydrogens

    DEFF Research Database (Denmark)

    Schou, Jørgen; Thestrup Nielsen, Birgitte; Svendsen, Winnie Edith; Stenum, Bjarne; Ellegaard, Ole; Pedrys, R.; Warczak, B.

    Sputtering of the solid hydrogens by electrons and ions exhibits features that may be related to quantum properties of these solids, i.e. a drastic enhancement of the yield for electron–bombarded thick deuterium films and a thermal peak at low ejection energies in the energy distribution of the...

  15. RF Sputtering of Gold Contacts On Niobium

    Science.gov (United States)

    Barr, D. W.

    1983-01-01

    Reliable gold contacts are deposited on niobium by combination of RF sputtering and photolithography. Process results in structures having gold only where desired for electrical contact. Contacts are stable under repeated cycling from room temperature to 4.2 K and show room-temperature contact resistance as much as 40 percent below indium contacts made by thermalcompression bonding.

  16. Plasma resistant structural member

    International Nuclear Information System (INIS)

    The present invention provides a plasma resistant ceramic material of a plasma confining device for a tokamak thermonuclear device. Namely, the structural member of the present invention comprises a ceramic-based fibrous composite material having a matrix mainly comprising SiC and fibers composited in the matrix, as a constitution undergoing heat fluxes from plasmas. It is constituted such that it undergoes heat fluxes from plasmas by way of a surface in the direction having the highest heat conductivity. Since the fibers are a reinforcing material for enhancing the toughness of the SiC matrix, SiC type fibers are used. With such a constitution, the structural member has excellent properties such as high temperature strength, high temperature creeping characteristics, high heat stability, elasticity, heat conductivity and sputtering resistance, in addition to provide a high melting point (high sublimation temperature) and a low atomic weight. (N.H.)

  17. Mechanical and structural properties of titanium dioxide deposited by innovative magnetron sputtering process

    Directory of Open Access Journals (Sweden)

    Wojcieszak Damian

    2015-09-01

    Full Text Available Titanium dioxide thin films were prepared using two types of magnetron sputtering processes: conventional and with modulated plasma. The films were deposited on SiO2 and Si substrates. X-ray diffraction measurements of prepared coatings revealed that the films prepared using both methods were nanocrystalline. However, the coatings deposited using conventional magnetron sputtering had anatase structure, while application of sputtering with modulated plasma made possible to obtain films with rutile phase. Investigations performed with the aid of scanning electron microscope showed significant difference in the surface morphology as well as the microstructure at the thin film cross-sections. The mechanical properties of the obtained coatings were determined on the basis of nanoindentation and abrasion resistance tests. The hardness was much higher for the films with the rutile structure, while the scratch resistance was similar in both cases. Optical properties were evaluated on the basis of transmittance measurements and showed that both coatings were well transparent in a visible wavelength range. Refractive index and extinction coefficient were higher for TiO2 with rutile structure.

  18. Sputtering of ErD2: experiment and theory

    International Nuclear Information System (INIS)

    Experimental measurements were made of the sputtering yield of ErD2 targets bombarded by D and A ions in the energy range 50-400 keV. A semiempirical sputtering theory is presented that relates sputtering to the energy deposited into atomic collisions beneath the target surface as well as at the surface. The theory accurately predicts the sputtering yields for both D and A bombardment. Additional calculated sputtering yields for ErD2 targets are presented which should allow extrapolation to any ion in the range of Z = 1 to Z = 36 with an accuracy better than 50 percent

  19. A Magnetic Bright Point Case Study

    Czech Academy of Sciences Publication Activity Database

    Utz, D.; Jurčák, Jan; Bellot Rubio, L.; del Toro Iniesta, J.C.; Thonhofer, S.; Hanslmeier, A.; Veronig, A.; Muller, R.; Lemmerer, B.

    2013-01-01

    Roč. 37, č. 2 (2013), s. 459-470. ISSN 1845-8319. [Hvar Astrophysical Colloquium /12./. Hvar, 03.09.2012-07.09.2012] R&D Projects: GA MŠk(CZ) MEB061109 Institutional support: RVO:67985815 Keywords : solar magnetic field * magnetic bright points * sunrise/IMaX Subject RIV: BN - Astronomy, Celestial Mechanics, Astrophysics

  20. A photometric investigation of a bright Geminid

    NARCIS (Netherlands)

    Degewij, J.; Diggelen, Johannes van

    1968-01-01

    Photographic observations of meteors in the Netherlands started with a bright Geminid of photographic magnitude −8 observed on December 11, 1955, 21h39m55s by M. Alberts. From the assumed radiant and velocity we have constructed the trajectory of the bolide. The luminosity of the trail has been dete

  1. Brightness versus roughness: a multiscale approach

    International Nuclear Information System (INIS)

    A link between roughness and brightness is sought for brass specimens that were superfinished, sandblasted and brushed. Only the blasting conditions are varied in order to get different roughness and brightness. First, a relation between roughness and brightness is sought for specimens that were superfinished and sandblasted. The best relation is obtained using the mean height of the motifs, calculated using a low-pass filter and cut-off length equal to 30 μm, with a logarithmic–logarithmic model. Then, the same type of relation is determined after superfinishing sandblasting and brushing. The core material volume Vmc, computed using a high-pass filter with a cut-off length of 60 μm and a linear–logarithmic relationship, gives the best results. A relation between roughness and brightness that is common to both the pre-brushing state and post-brushing state is identified: the best roughness parameter is the arithmetic mean deviation Sa using a high-pass filter with a cut-off of 15 μm, with a logarithmic–logarithmic relationship. Finally, it is shown that the use of these filtering conditions enables us to verify the model of Beckmann and Spizzichino for the examined specimens. This scale corresponds to the end of the fractal regime and is close to the end of the signal correlation. (paper)

  2. Discussion of high brightness rf linear accelerators

    International Nuclear Information System (INIS)

    The fundamental aspects of high-brightness rf linacs are outlined, showing the breadth and complexity of the technology and indicating that synergism with advancements in other areas is important. Areas of technology reviewed include ion sources, injectors, rf accelerator structures, beam dynamics, rf power, and automatic control

  3. News on sputter theory: Molecular targets, nanoparticle desorption, rough surfaces

    International Nuclear Information System (INIS)

    Sputtering theory has existed as a mature and well-understood field of physics since the theory of collision-cascade sputtering has been developed in the late 1960s. In this presentation we outline several directions, in which the basic understanding of sputter phenomena has been challenged and new insight has been obtained recently. Sputtering of molecular solids: after ion impact on a molecular solid, not all of the impact energy is available for inducing sputtering. Part of the energy is converted into internal (rotational and vibrational) excitation of the target molecules, and part is used for molecule dissociation. Furthermore, exothermic or endothermic chemical reactions may further change the energy balance in the irradiated target. Nanoparticle desorption: usually, the flux of sputtered particles is dominated by monatomics; in the case of a pronounced spike contribution to sputtering, the contribution of clusters in the sputtered flux may become considerable. Here, we discuss the situation that nanoparticles were present on the surface, and outline mechanisms of how these may be desorbed (more or less intact) by ion or cluster impact. Rough surfaces: real surfaces are rough and contain surface defects (adatoms, surface steps, etc.). For grazing ion incidence, these influence the energy input into the surface dramatically. For such incidence angles sputtering vanishes for a flat terrace; however, ion impact close to a defect may lead to sputter yields comparable to those at normal incidence. In such cases sputtering also exhibits a pronounced azimuth and temperature dependence.

  4. Deposition of sputtered iridium oxide-Influence of oxygen flow in the reactor on the film properties

    International Nuclear Information System (INIS)

    Thin films of iridium oxide have been deposited by reactive magnetron sputtering. The influence of oxygen partial pressure in the sputtering plasma on the composition, surface structure and morphology of the films has been studied by XRD, SEM and AFM analysis. An optimal combination of sputtering parameters yields stable microporous amorphous films with highly extended fractal surface. The electrochemical properties of these films have been investigated in view of their application as catalysts for water splitting, using the electrochemical techniques of cyclovoltammetry, electrochemical impedance spectroscopy, and steady state polarization. The SIROFs have shown an excellent electrochemical reversibility and a high catalytic activity toward the oxygen evolution reaction in 0.5 M H2SO4. A current density of 150 mA cm-2 at potential of 1.7 V (versus Ag/AgCl) has been obtained at catalyst load of only 100 μg cm-2. These results combined with the established long-term mechanical stability of the sputtered iridium oxide films (SIROFs) proved the advantages of the reactive magnetron sputtering as simple and reliable method for preparation of catalysts with precisely controlled composition, loading, and surface characteristics

  5. Circadian Phase-Shifting Effects of Bright Light, Exercise, and Bright Light + Exercise

    OpenAIRE

    Youngstedt, Shawn D.; Kline, Christopher E.; Elliott, Jeffrey A; Zielinski, Mark; Devlin, Tina M.; Moore, Teresa A.

    2016-01-01

    Limited research has compared the circadian phase-shifting effects of bright light and exercise and additive effects of these stimuli. The aim of this study was to compare the phase-delaying effects of late night bright light, late night exercise, and late evening bright light followed by early morning exercise. In a within-subjects, counterbalanced design, 6 young adults completed each of three 2.5-day protocols. Participants followed a 3-h ultra-short sleep-wake cycle, involving wakefulness...

  6. Charge ordering in reactive sputtered (1 0 0) and (1 1 1) oriented epitaxial Fe3O4 films

    KAUST Repository

    Mi, Wenbo

    2013-06-01

    Epitaxial Fe3O4 films with (1 0 0) and (1 1 1) orientations fabricated by reactive sputtering present simultaneous magnetic and electrical transitions at 120 and 124 K, respectively. The symmetry decreases from face-centered cubic to monoclinic structure across the Verwey transition. Extra spots with different brightness at different positions appear in selected-area diffraction patterns at 95 K. The extra spots come from the charge ordering of outer-layer electrons of Fe atoms, and should be related to the charge ordering of octahedral B-site Fe atoms. © 2013 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

  7. Exploiting the plasma potential

    International Nuclear Information System (INIS)

    The concept of plasma potential arises from the interaction of a plasma with a boundary. Due to the high mobility of electrons, a potential difference develops between the two so that a positive space-charge region, the 'sheath', shields the plasma from the boundary. Losses of ions at the boundary, however, means that shielding is ineffective unless ions enter the sheath region with a sufficiently high velocity (the 'Bohm criterion'). Since this ion flux cannot be generated by thermal motion, there is a potential variation within the plasma itself (the 'presheath'), which accelerates the ions towards the plasma edge. The potential difference between a plasma and a boundary has been exploited in a wide variety of plasma surface engineering applications. The surface of a substrate immersed in a plasma will be subject to bombardment by ions accelerated across the sheath which will not only heat the substrate but can also sputter atoms out of the surface, modify the properties of films deposited onto the surface or result in bombarding species being incorporated into the surface. While energetic ion bombardment can be supplied by directed ion beams, it is more easily applied uniformly over complex surfaces by biasing a substrate immersed in a plasma with an appropriate negative potential, either DC or rectified rf. This is a feature of ion assisted deposition processes, both PVD and CVD, ion assisted thermochemical diffusion processes, such as plasma nitriding, and, in the limit of high bias potentials (10-100 kV), Plasma Immersion Ion Implantation (PIII or PI3 - Trade Mark). This paper reviews some of the interesting and intriguing aspects of the behaviour of low pressure rf plasmas when large perturbations occur to the potential distribution described above. These observations have been made as part of our work over the last ten years on the use of low pressure plasmas and high energy ion bombardment to extend the range of applicability of plasma nitriding, in

  8. Thin films preparation of the Ti-Al-O system by rf-sputtering

    International Nuclear Information System (INIS)

    In the present work Ti-Al-O thin films were synthesized by rf-sputtering technique on glass and silicon (Si) substrates using Ti Al and Ti3Al targets in a sputtering chamber with an Ar-O2 atmosphere. Ti-Al-O thin films were obtained varying experimental parameters such as oxygen percent fed to the reaction chamber, plasma power density and substrate temperature. The films deposited on glass substrates were used to evaluate their optical properties, while those deposited on Si substrates were used to evaluate mechanical and morphological properties. The crystalline structure, morphology, chemical composition and optical properties of the films were evaluated by X-ray diffraction, high-resolution scanning electron microscopy, Auger electron microscopy and visible UV spectroscopy. Films thicknesses were measured using a profiler. The roughness and mechanical properties such as hardness and Young modulus were analyzed by atomic force microscopy and nano indentation technique, respectively. (Author)

  9. Reactive sputter-deposition and friction properties of lead oxide films

    International Nuclear Information System (INIS)

    This paper reports results of experiments designed to investigate lead oxide films produced by radiofrequency reactive sputtering from a lead target and argon-oxygen discharges. Composition and crystal structure of the layers depend on the plasma oxygen content and the sputtering power. The O/Pb atom number ratio increased rapidly up to 1 as the oxygen content in the gas phase varied from 1.5 to 6 %. The Pb, β-PbO and PbO1.57 and other unindentifiable lead oxide phases are present in the layers in various proportions according to the deposition conditions. Residual tensile stresses in the layers increase up to 500 MPa for a O/Pb atomic ratio higher than 1. Friction coefficient of tribological discs covered with lead oxide films of various compositions were measured during ball-disc tests performed in ambient atmosphere. (J.S.). 7 refs., 4 figs., 2 tabs

  10. Improved adherence of sputtered titanium carbide coatings on nickel- and titanium-base alloys

    Science.gov (United States)

    Wheeler, D. R.; Brainard, W. A.

    1979-01-01

    Rene 41 and Ti-6Al-4V alloys were radio frequency sputter coated with titanium carbide by several techniques in order to determine the most effective. Coatings were evaluated in pin-on-disk tests. Surface analysis by X-ray photoelectron spectroscopy was used to relate adherence to interfacial chemistry. For Rene 41, good coating adherence was obtained when a small amount of acetylene was added to the sputtering plasma. The acetylene carburized the alloy surface and resulted in better bonding to the TiC coating. For Ti-6Al-4V, the best adherence and wear protection was obtained when a pure titanium interlayer was used between the coating and the alloy. The interlayer is thought to prevent the formation of a brittle, fracture-prone, aluminum oxide layer.

  11. Magnetic properties of ZnO:Cu thin films prepared by RF magnetron sputtering

    Institute of Scientific and Technical Information of China (English)

    Zhuo Shiyi; Xiong Yuying; Gu Min

    2009-01-01

    ZnO films and ZnO:Cu diluted magnetic semiconductor films were prepared by radio frequency magnetron sputtering on Si (111) substrates, with targets of ZnO and Zn0.99Cu0.01 O, respectively. The plasma emission spectra were analyzed by using a grating monochromator during sputtering. The X-ray photoelectron spectroscopy measurements indicate the existence of Zni defect in the films, and the valence state of Cu is 1. The X-ray diffraction measurements indicate that the thin films have a hexagonal wurtzite structure and have a preferred orientation along the c-axis. The vibrating sample magnetometer measurements indicate that the sample is ferromagnetic at room temperature, and the origin of the magnetic behavior of the samples is discussed.

  12. Circadian Phase-Shifting Effects of Bright Light, Exercise, and Bright Light + Exercise.

    Science.gov (United States)

    Youngstedt, Shawn D; Kline, Christopher E; Elliott, Jeffrey A; Zielinski, Mark R; Devlin, Tina M; Moore, Teresa A

    2016-01-01

    Limited research has compared the circadian phase-shifting effects of bright light and exercise and additive effects of these stimuli. The aim of this study was to compare the phase-delaying effects of late night bright light, late night exercise, and late evening bright light followed by early morning exercise. In a within-subjects, counterbalanced design, 6 young adults completed each of three 2.5-day protocols. Participants followed a 3-h ultra-short sleep-wake cycle, involving wakefulness in dim light for 2h, followed by attempted sleep in darkness for 1 h, repeated throughout each protocol. On night 2 of each protocol, participants received either (1) bright light alone (5,000 lux) from 2210-2340 h, (2) treadmill exercise alone from 2210-2340 h, or (3) bright light (2210-2340 h) followed by exercise from 0410-0540 h. Urine was collected every 90 min. Shifts in the 6-sulphatoxymelatonin (aMT6s) cosine acrophase from baseline to post-treatment were compared between treatments. Analyses revealed a significant additive phase-delaying effect of bright light + exercise (80.8 ± 11.6 [SD] min) compared with exercise alone (47.3 ± 21.6 min), and a similar phase delay following bright light alone (56.6 ± 15.2 min) and exercise alone administered for the same duration and at the same time of night. Thus, the data suggest that late night bright light followed by early morning exercise can have an additive circadian phase-shifting effect. PMID:27103935

  13. Sputtering of copper atoms by keV atomic and molecular ions A comparison of experiment with analytical and computer based models

    CERN Document Server

    Gillen, D R; Goelich,

    2002-01-01

    Non-resonant multiphoton ionisation combined with quadrupole and time-of-flight analysis has been used to measure energy distributions of sputtered copper atoms. The sputtering of a polycrystalline copper target by 3.6 keV Ar sup + , N sup + and CF sub 2 sup + and 1.8 keV N sup + and CF sub 2 sup + ion bombardment at 45 deg. has been investigated. The linear collision model in the isotropic limit fails to describe the high energy tail of the energy distributions. However the TRIM.SP computer simulation has been shown to provide a good description. The results indicate that an accurate description of sputtering by low energy, molecular ions requires the use of computer simulation rather than analytical approaches. This is particularly important when considering plasma-surface interactions in plasma etching and deposition systems.

  14. A Compact High-Brightness Heavy-Ion Injector

    CERN Document Server

    Westenskow, Glen; Grote, D P; Halaxa, Erni; Kwan, Joe W

    2005-01-01

    To provide compact high-brightness heavy-ion beams for Heavy Ion Fusion (HIF) accelerators, we have been experimenting with merging multi-beamlets in an injector which uses an RF plasma source. In an 80-kV 20-microsecond experiment, the RF plasma source has produced up to 5 mA of Ar+ in a single beamlet. An extraction current density of 100 mA/cm2 was achieved, and the thermal temperature of the ions was below 1 eV. More than 90% of the ions were in the Ar+ state, and the energy spread from charge exchange was found to be small. We have tested at full voltage gradient the first 4 gaps of a 61-beamlet injector design. Einzel lens were used to focus the beamlets while reducing the beamlet to beamlet space charge interaction. We will report on a converging 119 multi-beamlet source. Although the source has the same optics as a full 1.6 MV injector system, the test will be carried out at 400 kV due to the test stand HV limit. We will measure the beam’s emittance after the beamlets are merged and have bee...

  15. The bright optical flash from GRB 060117

    CERN Document Server

    Jel'inek, M; Kubánek, P; Hudec, R; Nekola, M; Grygar, J; Castro-Tirado, A J; Gorosabel, J; Hrabovsk'y, M; Mandat, D; Nosek, D; Palatka, M; Pandey, S B; Pech, M; Schovanek, P; De Postigo, A U; Vítek, S; Jel\\'inek, Martin; Prouza, Michael; Kub\\'anek, Petr; Hudec, Ren\\'e; Nekola, Martin; R}\\'idk\\'y, Jan {; Grygar, Ji{r}\\'i; Castro-Tirado, Alberto J.; Gorosabel, Javier; Hrabovsk\\'y, Miroslav; Mand\\'at, Du{s}an; Nosek, Dalibor; Palatka, Miroslav; Pandey, Shashi B.; Pech, Miroslav; Schov\\'anek, Petr; S}m\\'ida, Radom\\'ir {; Postigo, Antonio de Ugarte; V\\'itek, Stanislav

    2006-01-01

    We present a discovery and observation of an extraordinarily bright prompt optical emission of the GRB 060117 obtained by a wide-field camera atop the robotic telescope FRAM of the Pierre Auger Observatory from 2 to 10 minutes after the GRB. We found rapid average temporal flux decay of alpha = -1.7 +- 0.1 and a peak brightness R = 10.1 mag. Later observations by other instruments set a strong limit on the optical and radio transient fluxes, unveiling an unexpectedly rapid further decay. We present an interpretation featuring a relatively steep electron-distribution parameter p ~ 3.0 and providing a straightforward solution for the overall fast decay of this optical transient as a transition between reverse and forward shock.

  16. An ultra-bright atom laser

    International Nuclear Information System (INIS)

    We present a novel, ultra-bright atom laser and an ultra-cold thermal atom beam. Using rf-radiation we strongly couple the magnetic hyperfine levels of 87Rb atoms in a trapped Bose–Einstein condensate. The resulting time-dependent adiabatic potential forms a trap, which at low rf-frequencies opens just below the condensate and thus allows an extremely bright well-collimated atom laser beam to emerge. As opposed to traditional atom lasers based on weak coupling of the magnetic hyperfine levels, this technique allows us to outcouple atoms at an arbitrarily large rate. We achieve a flux of 4×107 atom s-1, a seven fold increase compared to the brightest atom lasers to date. Furthermore, we demonstrate by two orders of magnitude the coldest thermal atom beam (200 nK). (paper)

  17. Quantum Bright Soliton in a Disorder Potential

    Science.gov (United States)

    Sacha, K.; Delande, D.; Zakrzewski, J.

    2009-11-01

    At very low temperature, a quasi-one-dimensional ensemble of atoms with attractive interactions tend to form a bright soliton. When exposed to a sufficiently weak external potential, the shape of the soliton is not modified, but its external motion is affected. We develop in detail the Bogoliubov approach for the problem, treating, in a non-perturbative way, the motion of the center of mass of the soliton. Quantization of this motion allows us to discuss its long time properties. In particular, in the presence of a disordered potential, the quantum motion of the center of mass of a bright soliton may exhibit Anderson localization, on a localization length which may be much larger than the soliton size and could be observed experimentally.

  18. Modeling the Europa plasma torus

    Science.gov (United States)

    Schreier, Ron; Eviatar, Aharon; Vasyliunas, Vytenis M.; Richardson, John D.

    1993-01-01

    The existence of a torus of plasma generated by sputtering from Jupiter's satellite Europa has long been suspected but never yet convincingly demonstrated. Temperature profiles from Voyager plasma observations indicate the presence of hot, possibly freshly picked-up ions in the general vicinity of the orbit of Europa, which may be interpreted as evidence for a local plasma torus. Studies of ion partitioning in the outer regions of the Io torus reveal that the oxygen to sulfur mixing ratio varies with radial distance; this may indicates that oxygen-rich matter is injected from a non-Io source, most probably Europa. We have constructed a quantitative model of a plasma torus near the orbit of Europa which takes into account plasma input from the Io torus, sputtering from the surface of Europa, a great number of ionization and charge exchange processes, and plasma loss by diffusive transport. When the transport time is chosen so that the model's total number density in consistent with the observed total plasma density, the contribution from Europa is found to be significant although not dominant. The model predicts in detail the ion composition, charge states, and the relative fractions of hot Europa-generated and (presumed) cold Io-generated ions. The results are generally consistent with observations from Voyager and can in principle (subject to limitations of data coverage) be confirmed in more detail by Ulysses.

  19. Evolution of laser-produced Sn extreme ultraviolet source diameter for high-brightness source

    International Nuclear Information System (INIS)

    We have investigated the effect of irradiation of solid Sn targets with laser pulses of sub-ns duration and sub-mJ energy on the diameter of the extreme ultraviolet (EUV) emitting region and source conversion efficiency. It was found that an in-band EUV source diameter as low as 18 μm was produced due to the short scale length of a plasma produced by a sub-ns laser. Most of the EUV emission occurs in a narrow region with a plasma density close to the critical density value. Such EUV sources are suitable for high brightness and high repetition rate metrology applications.

  20. Modular Zero Energy. BrightBuilt Home

    Energy Technology Data Exchange (ETDEWEB)

    Aldrich, Robb [Steven Winter Associates, Inc., Norwalk, CT (United States); Butterfield, Karla [Steven Winter Associates, Inc., Norwalk, CT (United States)

    2016-03-01

    With funding from the Building America Program, part of the U.S. Department of Energy Building Technologies Office, the Consortium for Advanced Residential Buildings (CARB) worked with BrightBuilt Home (BBH) to evaluate and optimize building systems. CARB’s work focused on a home built by Black Bros. Builders in Lincolnville, Maine (International Energy Conservation Code Climate Zone 6). As with most BBH projects to date, modular boxes were built by Keiser Homes in Oxford, Maine.

  1. Spectral Characterization of Bright Materials on Vesta

    Science.gov (United States)

    Capaccioni, Fabrizio; DeSanctis, M. C.; Ammannito, E.; Li, Jian-Yang; Longobardo, A.; Mittlefehldt, David W.; Palomba, E.; Pieters, C. M.; Schroeder, S. E.; Tosi, F.; Hiesinger, H.; Blewett, D. T.; Russell, C. T.; Raymond, C. A.

    2012-01-01

    The surface of Vesta, as observed by the camera and imaging spectrometer onboard the Dawn spacecraft, displays large surface diversity in terms of its geology and mineralogy with noticeably dark and bright areas on the surface often associated with various geological features and showing remarkably different forms. Here we report our initial attempt to spectrally characterize the areas that are distinctively brighter than their surroundings.

  2. Surface Brightness Fluctuations as Stellar Population Indicators

    OpenAIRE

    Blakeslee, John P

    2009-01-01

    Surface Brightness Fluctuations (SBF) can provide useful information about the unresolved stellar content of early-type galaxies and spiral bulges. The absolute SBF magnitude Mbar in a given passband depends on the properties of the stellar population and can be predicted by population synthesis models. SBF measurements in different bandpasses are sensitive to different evolutionary stages within the galaxy stellar population. Near-IR SBF magnitudes are sensitive to the evolution of stars wit...

  3. Bright vortex solitons in Bose Condensates

    OpenAIRE

    Adhikari, Sadhan K.

    2003-01-01

    We suggest the possibility of observing and studying bright vortex solitons in attractive Bose-Einstein condensates in three dimensions with a radial trap. Such systems lie on the verge of critical stability and we discuss the conditions of their stability. We study the interaction between two such solitons. Unlike the text-book solitons in one dimension, the interaction between two radially trapped and axially free three-dimensional solitons is inelastic in nature and involves exchange of pa...

  4. Bright Solitary Waves in Malignant Gliomas

    OpenAIRE

    Pérez-García, Víctor M.; Calvo, Gabriel F.; Belmonte-Beitia, Juan; Diego, D.; Pérez-Romasanta, Luis

    2011-01-01

    We put forward a nonlinear wave model describing the fundamental physio-pathologic features of an aggressive type of brain tumors: glioblastomas. Our model accounts for the invasion of normal tissue by a proliferating and propagating rim of active glioma cancer cells in the tumor boundary and the subsequent formation of a necrotic core. By resorting to numerical simulations, phase space analysis and exact solutions, we prove that bright solitary tumor waves develop in such systems.

  5. Influence of manufacturing process of indium tin oxide sputtering targets on sputtering behavior

    Energy Technology Data Exchange (ETDEWEB)

    Gehman, B.L. (Leybold Materials Inc., Morgan Hill, CA (United States)); Jonsson, S. (Degussa AG, Dept. FTM-S, Hanau (Germany)); Rudolph, T. (Degussa AG, Dept. FTM-S, Hanau (Germany)); Scherer, M. (Leybold AG, R and D Dept., Alzenau (Germany)); Werner, R. (Leybold AG, R and D Dept., Alzenau (Germany)); Weigert, M. (Leybold Materials GmbH, Hanau (Germany))

    1992-11-20

    Thin films of In[sub 2]O[sub 3]+SnO[sub 2] (indium tin oxide or ITO) have wide utility because they are electrically conductive and transparent at visible wavelengths. A preferred method for making highest quality ITO coatings is reactive sputtering from targets of mixed indium and tin oxides. The resulting film properties are highly dependent upon the deposition conditions, and upon post-deposition film treatments. Film data and sputtering efficiency are also effected deposition conditions, and upon post-deposition film treatments. Film data and sputtering efficiency are also effected by sputtering target characteristics. This study evaluated the influence of the targets on the electrical resistivity of deposited ITO films, and the effect of target properties on the sputtering rate. A matrix of 12 targets was tested; all had composition 90 wt.%In[sub 2]O[sub 3]+10 wt.%SnO[sub 2]. The effects of varying target density, degree of target oxide reduction from complete stoichiometry, and target purity were measured. The results are, in summary, (1) partial reduction of oxide targets from complete stoichiometry does not influence film resistivity, (2) the data indicate a small (perhaps negligible) dependence of film resistivity upon target density, (3) higher target density tends to promote enhanced deposition rate, and (4) purposeful addition of silicon, aluminum, magnesium, calcium, and sodium at high levels to ITO targets degrades film resistivity depending upon the total concentration of impurities added, but independently of the contaminating species. (orig.)

  6. Sputtering behavior of boron and boron carbide

    International Nuclear Information System (INIS)

    Sputtering yields of boron were measured with D+ and B+ ions for normal and oblique angles of incidence. Self-sputtering data of boron carbide were simulated in the experiment by using Ne+ ions. The energies of the impinging ions were between 20 eV and 10 keV. The measured data are compared with computer simulated values calculated with the TRIMSP program. The boron data for normal ion impact are higher than the calculated values, whereas those for oblique ion incidence are smaller than the calculation predicts. This discrepancy is explained by the surface roughness and supported by SEM micrographs. The comparison of the boron carbide data with TRIMSP calculations shows much better agreement than the boron data. In this case the target surface was much smoother. (orig.)

  7. Thermal conductivities of thin, sputtered optical films

    International Nuclear Information System (INIS)

    The normal component of thin-film thermal conductivity has been measured for the first time, to the best of our knowledge, for several advanced sputtered optical materials. Included are data for single layers of boron nitride, silicon aluminum nitride, silicon aluminum oxynitride, silicon carbide, and for dielectric-enhanced metal reflectors of the form Al(SiO2/Si3N4)n and Al(Al2O3/AlN)n. Sputtered films of more conventional materials such as SiO2, Al2O3, Ta2O5, Ti, and Si have also been measured. The data show that thin-film thermal conductivities are typically 10 to 100 times lower than conductivities for the same materials in bulk form. Structural disorder in the amorphous or fine-grained films appears to account for most of the conductivity difference. Conclusive evidence for a film--substrate interface contribution is presented

  8. Complex Plasmoid Behaviors in Dusty Plasma Experiments

    OpenAIRE

    Mikikian, Maxime; Tawidian, Hagop; Lecas, Thomas

    2014-01-01

    In this paper, we report on a particularly impressive feature of dusty plasma instabilities where moving bright plasma spots (plasmoids) appear in between the electrodes of a low-pressure capacitively-coupled rf discharge (ccrf). These plasmoids show complex behaviors like mutual interactions consisting in their merging or splitting. The interest of this study is beyond the field of dusty plasmas as well-delimited regions of enhanced emission are observed in many different kinds of plasmas (f...

  9. On the origin of facular brightness

    CERN Document Server

    Kostik, R

    2016-01-01

    This paper studies the dependence of the CaIIH line core brightness on the strength and inclination of photospheric magnetic field, and on the parameters of convective and wave motions in a facular region at the solar disc center. We use three simultaneous datasets obtained at the German Vacuum Tower Telescope (Observatorio del Teide, Tenerife): (1) spectra of BaII 4554 A line registered with the instrument TESOS to measure the variations of intensity and velocity through the photosphere up to the temperature minimum; (2) spectropolarimetric data in FeI 1.56 $\\mu$m lines (registered with the instrument TIP II) to measure photospheric magnetic fields; (3) filtergrams in CaIIH that give information about brightness fluctuations in the chromosphere. The results show that the CaIIH brightness in the facula strongly depends on the power of waves with periods in the 5-min range, that propagate upwards, and also on the phase shift between velocity oscillations at the bottom photosphere and around the temperature min...

  10. Search for bright stars with infrared excess

    International Nuclear Information System (INIS)

    Bright stars, stars with visual magnitude smaller than 6.5, can be studied using small telescope. In general, if stars are assumed as black body radiator, then the color in infrared (IR) region is usually equal to zero. Infrared data from IRAS observations at 12 and 25μm (micron) with good flux quality are used to search for bright stars (from Bright Stars Catalogues) with infrared excess. In magnitude scale, stars with IR excess is defined as stars with IR color m12−m25>0; where m12−m25 = −2.5log(F12/F25)+1.56, where F12 and F25 are flux density in Jansky at 12 and 25μm, respectively. Stars with similar spectral type are expected to have similar color. The existence of infrared excess in the same spectral type indicates the existence of circum-stellar dust, the origin of which is probably due to the remnant of pre main-sequence evolution during star formation or post AGB evolution or due to physical process such as the rotation of those stars

  11. Sputter-initiated resonance ionization spectroscopy

    International Nuclear Information System (INIS)

    A new technique, sputter-initiated resonance ionization spectroscopy (SIRIS), which provides an ultrasensitive analysis of solid samples for all elements except helium and neon is described in this paper. Sensitivities down to 1 part in 1012 should be available in routine SIRIS analysis, and greater sensitivities should be available for special cases. The basic concepts of this technology and early results in the development of the new SIRIS process and apparatus are presented. (Auth.)

  12. Magnetron sputtering of thin nitride films

    OpenAIRE

    Kola, Prashanthi V

    1995-01-01

    The objective in this investigation was to design and commission a magnetron sputter deposition system and investigate the properties of hard coatings for mechanical and biomedical applications. The deposition of titanium (Ti) and titanium nitride (TiN) was undertaken as part of the commissioning tests and further work was conducted on the effect of the deposition parameters on the properties of TiN, specifically for biocompatible applications. A thorough understanding of the deposition proce...

  13. Sputter coating of microspherical substrates by levitation

    Science.gov (United States)

    Lowe, A.T.; Hosford, C.D.

    Microspheres are substantially uniformly coated with metals or nonmetals by simltaneously levitating them and sputter coating them at total chamber pressures less than 1 torr. A collimated hole structure comprising a parallel array of upwardly projecting individual gas outlets is machined out to form a dimple. Glass microballoons,, which are particularly useful in laser fusion applications, can be substantially uniformly coated using the coating method and apparatus.

  14. Niobium sputter deposition on quarter wave resonators

    CERN Document Server

    Viswanadham, C; Jayaprakash, D; Mishra, R L

    2003-01-01

    Niobium sputter deposition on quarter wave copper R.F resonators, have been taken up in our laboratory, An ultra high vacuum system was made for this purpose. Niobium exhibits superconducting properties at liquid Helium temperature. A uniform coating of about 1.5 mu m of niobium on the internal surfaces of the copper resonant cavities is desired. Power dissipation in the resonators can be greatly reduced by making the internal surfaces of the R.F cavity super conducting. (author)

  15. The surface brightness of spiral galaxies: Pt. 4

    International Nuclear Information System (INIS)

    Using measurements from IRAS correlations are found between optical surface brightness and both infrared-to-optical flux ratio and infrared colour temperature, in the sense that galaxies with high surface brightness have higher FIR emission and higher temperatures. (author)

  16. Large area plasma source

    Science.gov (United States)

    Foster, John (Inventor); Patterson, Michael (Inventor)

    2008-01-01

    An all permanent magnet Electron Cyclotron Resonance, large diameter (e.g., 40 cm) plasma source suitable for ion/plasma processing or electric propulsion, is capable of producing uniform ion current densities at its exit plane at very low power (e.g., below 200 W), and is electrodeless to avoid sputtering or contamination issues. Microwave input power is efficiently coupled with an ionizing gas without using a dielectric microwave window and without developing a throat plasma by providing a ferromagnetic cylindrical chamber wall with a conical end narrowing to an axial entrance hole for microwaves supplied on-axis from an open-ended waveguide. Permanent magnet rings are attached inside the wall with alternating polarities against the wall. An entrance magnet ring surrounding the entrance hole has a ferromagnetic pole piece that extends into the chamber from the entrance hole to a continuing second face that extends radially across an inner pole of the entrance magnet ring.

  17. Composition, structure and properties of sputter deposited calcium phosphate thin films

    International Nuclear Information System (INIS)

    The provision of calcium phosphate (Ca-P) coatings as part of medical (or dental) implants in order to provide a bioactive response in-vivo, and thereby improve bone apposition at the implant-tissue interface is a high priority research area. Bioceramic coatings derived from hydroxyapatite (HA, Ca10(PO4)6(OH)2), are now commonly used in a range of hard tissue implants for many clinical applications. Currently, plasma spraying is the main method used to deposit such coatings. However, the nature of the resultant coatings is often inappropriate for long term implant applications, the more so in younger patients who expect to have an active life post-operatively. Deposition by alternative methods, in particular Radio Frequency (RF) magnetron sputtering, has been found to offer significant advantages over plasma spraying. Effective utilisation of the sputtering process is, however, critically dependent on obtaining reproducible coatings with controlled properties. This thesis reports an extensive body of research undertaken to provide improved HA and related thin film coatings by the RF magnetron sputtering technique. Emphasis has been placed on providing a detailed understanding of how both the target materials and the deposition conditions employed influence key properties of the sputtered films. The experimental work focuses on several key points, including, the detailed characterisation of a range of commercially available Ca-P bioceramics and a comparison of these materials with the HA-type systems produced using a wet precipitation method and microwave assisted techniques. Subsequently, the work concentrates on the deposition of thin HA coatings onto a range of substrates using RF magnetron sputtering at deposition powers of less than 200 W. The targets used for these sputter deposition experiments were manufactured by both pressure filtration and standard dry pressing techniques. The Ca-P films produced have been compared to plasma sprayed coatings both

  18. Simulation of tungsten sputtering with EDGE2D–EIRENE in low triangularity L-mode JET ITER like wall configuration

    NARCIS (Netherlands)

    Harting, D.; Groth, M.; Beurskens, M.; Boerner, P.; Brix, M.; Coenen, J. W.; Corrigan, G.; Lehnen, M.; Marsen, S.; van Rooij, G. J.; Reiter, D.; Wiesen, S.

    2013-01-01

    The 2D edge plasma transport code EDGE2D-EIRENE has been upgraded to account for the actual material and geometric properties of the newly installed İTER\\} like wall (ILW) at JET. This includes the simulation of beryllium and tungsten impurities as well as a revised treatment of sputtering by main p

  19. Anodic self-organized transparent nanotubular/porous hematite films from Fe thin-films sputtered on FTO and photoelectrochemical water splitting

    Czech Academy of Sciences Publication Activity Database

    Wang, L.; Lee, C.-Y.; Kirchgeorg, R.; Liu, N.; Lee, K.; Kment, Š.; Hubička, Zdeněk; Krýsa, J.; Olejníček, J.; Čada, M.; Zbořil, R.; Schmuki, P.

    2015-01-01

    Roč. 41, č. 12 (2015), s. 9333-9341. ISSN 0922-6168. [Pannonian Symposium on Catalysis /12./. Třešť, 16.09.2014-20.09.2014] Institutional support: RVO:68378271 Keywords : hematite * nanotubular * anodization * magnetron * sputtering * water splitting Subject RIV: BL - Plasma and Gas Discharge Physics Impact factor: 1.221, year: 2014

  20. Evaluation of composition, mechanical properties and structure of nc-TiC/a-C:H coatings prepared by balanced magnetron sputtering

    Czech Academy of Sciences Publication Activity Database

    Souček, P.; Schmidtová, T.; Zábranský, L.; Buršíková, V.; Vašina, P.; Caha, O.; Jílek, M.; Abdelazziz, El Mel.; Tessier, P.Y.; Schäfer, J.; Buršík, Jiří; Peřina, Vratislav; Mikšová, Romana

    2012-01-01

    Roč. 211, OCT 25 (2012), s. 111-116. ISSN 0257-8972 Institutional support: RVO:68081723 ; RVO:61389005 Keywords : nanocomposite * magnetron sputtering * titanium Subject RIV: JI - Composite Materials; BL - Plasma and Gas Discharge Physics (UJF-V) Impact factor: 1.941, year: 2012

  1. Star formation and the surface brightness of spiral galaxies

    International Nuclear Information System (INIS)

    The (blue) surface brightness of spiral galaxies is significantly correlated with their Hα linewidth. This can be most plausibly interpreted as a correlation of surface brightness with star formation rate. There is also a significant difference in surface brightness between galaxies forming stars in a grand design spiral pattern and those with floc star formation regions. (author)

  2. Reactive magnetron sputtering : from fundamentals to high deposition rate processes

    OpenAIRE

    Kubart, Tomas

    2013-01-01

    Reactive magnetron sputtering is widely used for synthesis of various compound thin films. The technique is very versatile and scalable. Especially in industry, high productivity is essential and there is a need for processes with high deposition rates. Achieving high deposition rate and true compound stoichiometry of the deposited film is, however, challenging in reactive sputtering. As a consequence of complex interaction between the reactive gas and the sputtered metal, the relation betwee...

  3. TiN films grown by reactive magnetron sputtering with enhanced ionization at low discharge pressures

    International Nuclear Information System (INIS)

    TiN films were produced by reactive magnetron sputtering at a discharge pressure of 0.09 Pa on substrates placed 200 mm away from the magnetron target, using a sputtering system with enhanced ionization by means of multipolar magnetic confinement. The effects on film properties are reported for two ranges of values: an external substrate bias Us of from -35 to -150 V, and a floating potential Ufl of from -24 to -45 V. All films show a dense microstructure, a smooth surface and shiny golden color. The microhardness HV is between 2000 and 2600 kg mm-1, a high critical load of up to Lc = 58 N in scratch tests and the coefficient of friction against a cemented carbide counter ball is between 0.12 and 0.22. The color co-ordinated L*, A* and B* depend on the bias voltage. The brightness L* reaches 78 CIELAB units. The properties of films prepared at Us between -60 and -150 V compare well to those of ion-plated films. The films prepared at | Us | fl, exhibit comparatively low compressive microstresses down to 2.2 GPa and low microstrain down to 3.5 x 10-3. These films show single (111), (200) or (220) textures, or a mixed (200) + (111) texture, depending on the U value at which they were prepared. (author)

  4. LIF studies for TiN, TiC coating modification by ion sputtering

    International Nuclear Information System (INIS)

    The application of a coating to some elements of the vacuum vessel has been widely used in fusion devices during the last decade. As a rule, this results in a decrease in impurity concentrations in the plasma and a decrease in the radiation losses. TiC and TiN coatings are the most stable binary coatings in a plasma environment. However up till now the changing properties of the coatings themselves, in a plasma environment have not been properly studied. For example, there are contradictions with respect to the depth of stoichiometric composition changes (depletion of the lighter component in binary coatings). The aim of these experiments is to compare the results of partial sputtering coefficient measurements for metal titanium and TiN, TiC coatings, and the depth distribution of N atoms in the TiN coating before and after H+ ion bombardment. We have used the LIF technique for measuring the sputtered Ti atom density and velocity distribution along the normal to the bombarded surface, and the nuclear reaction method for studying the N atom depth distribution. (orig./AH)

  5. Initial deposition of calcium phosphate ceramic on polystyrene and polytetrafluoroethylene by rf magnetron sputtering deposition

    International Nuclear Information System (INIS)

    Calcium phosphate (CaP) coatings can be applied to improve the biological performance of polymeric medical implants. A strong interfacial bond between ceramic and polymer is required for clinical applications. Because the chemical structure of an interface plays an important role in the adhesion of a coating, we studied the formation of the interface between CaP and polystyrene (PS) and polytetrafluoroethylene (PTFE). The coating was deposited in a radio frequency (rf) magnetron sputtering deposition system. Prior to the deposition, some samples received an oxygen plasma pretreatment. We found that the two substrates show a strongly different reactivity towards CaP. On PS a phosphorus and oxygen enrichment is present at the interface. This is understood from POx complexes that are able to bind to the PS. The effects of the plasma pretreatment are overruled by the deposition process itself. On PTFE, a calcium enrichment and an absence of phosphorus is found at the interface. The former is the result of CaF2-like material being formed at the interface. The latter may be the result of phosphorus reacting with escaping fluorine to a PF3 molecule, which than escapes from the material as a gas molecule. We found that the final structure of the interface is mostly controlled by the bombardment of energetic particles escaping either from the plasma or from the sputtering target. The work described here can be used to understand and improve the adhesion of CaP coatings deposited on medical substrates

  6. Low refractive index SiOF thin films prepared by reactive magnetron sputtering

    International Nuclear Information System (INIS)

    We have studied low refractive index fluorine doped silica thin films prepared by reactive magnetron sputtering. Two experimental parameters were varied to increase the porosity of the films, the geometry of the deposition process (i.e., the use of glancing angle deposition) and the presence of chemical etching agents (fluorine species) at the plasma discharge during film growth. The microstructure, chemistry, optical properties, and porosity of the films have been characterized by scanning electron and atomic force microscopy, Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy, UV–vis, and spectroscopic ellipsometry. It is found that either the deposition at glancing angles or the incorporation of CFx species in the plasma discharge during film growth produces a decrease in the refractive index of the deposited films. The combined effect of the two experimental approaches further enhances the porosity of the films. Finally, the films prepared in a glancing geometry exhibit negative uniaxial birefringence. - Highlights: • SiOF thin films with controlled porosity prepared by reactive magnetron sputtering • Incorporation of CFx precursors in the plasma discharge enhances film porosity. • Deposition at glancing geometries further increases void fraction within the films

  7. Sputtering materials for VLSI and thin film devices

    CERN Document Server

    Sarkar, Jaydeep

    2010-01-01

    An important resource for students, engineers and researchers working in the area of thin film deposition using physical vapor deposition (e.g. sputtering) for semiconductor, liquid crystal displays, high density recording media and photovoltaic device (e.g. thin film solar cell) manufacturing. This book also reviews microelectronics industry topics such as history of inventions and technology trends, recent developments in sputtering technologies, manufacturing steps that require sputtering of thin films, the properties of thin films and the role of sputtering target performance on overall p

  8. Modeling and stability analysis of the nonlinear reactive sputtering process

    Directory of Open Access Journals (Sweden)

    György Katalin

    2011-12-01

    Full Text Available The model of the reactive sputtering process has been determined from the dynamic equilibrium of the reactive gas inside the chamber and the dynamic equilibrium of the sputtered metal atoms which form the compound with the reactive gas atoms on the surface of the substrate. The analytically obtained dynamical model is a system of nonlinear differential equations which can result in a histeresis-type input/output nonlinearity. The reactive sputtering process has been simulated by integrating these differential equations. Linearization has been applied for classical analysis of the sputtering process and control system design.

  9. Magnetron sputter deposition of boron and boron carbide

    International Nuclear Information System (INIS)

    The fabrication of X-ray optical coatings with greater reflectivity required the development of sputter deposition processes for boron and boron carbide. The use of high density boron and boron carbide (B4C) and a vacuum-brazed target design was required to achieve the required sputter process stability and resistance to the thermal stress created by high rate sputtering. Our results include a description of the target fabrication procedures and sputter process parameters necessary to fabricate B4C and boron modulated thin film structures. (orig.)

  10. Preparation and comparison of a-C:H coatings using reactive sputter techniques

    Energy Technology Data Exchange (ETDEWEB)

    Keunecke, M., E-mail: martin.keunecke@ist.fraunhofer.d [Fraunhofer Institute for Surface Engineering and Thin Films (IST), Braunschweig (Germany); Weigel, K.; Bewilogua, K. [Fraunhofer Institute for Surface Engineering and Thin Films (IST), Braunschweig (Germany); Cremer, R.; Fuss, H.-G. [CemeCon AG, Wuerselen (Germany)

    2009-12-31

    Amorphous hydrogenated carbon (a-C:H) coatings are widely used in several industrial applications. These coatings commonly will be prepared by plasma activated chemical vapor deposition (PACVD). The main method used to prepare a-C:H coating in industrial scale is based on a glow discharge in a hydrocarbon gas like acetylene or methane using a substrate electrode powered with medium frequency (m.f. - some 10 to 300 kHz). Some aims of further development are adhesion improvement, increase of hardness and high coating quality on complex geometries. A relatively new and promising technique to fulfil these requirements is the deposition of a-C:H coatings by a reactive d.c. magnetron sputter deposition from a graphite target with acetylene as reactive gas. An advancement of this technique is the deposition in a pulsed magnetron sputter process. Using these three mentioned techniques a-C:H coatings were prepared in the same deposition machine. For adhesion improvement different interlayer systems were applied. The effect of different substrate bias voltages (d.c. and d.c. pulse) was investigated. By applying the magnetron sputter technique in the d.c. pulse mode, plastic hardness values up to 40 GPa could be reached. Besides hardness other mechanical properties like resistance against abrasive wear were measured and compared. Cross sectional SEM images showed the growth structure of the coatings.

  11. Optimization of scandium oxide growth by high pressure sputtering on silicon

    International Nuclear Information System (INIS)

    This work demonstrates the viability of scandium oxide deposition on silicon by means of high pressure sputtering. Deposition pressure and radio frequency power are varied for optimization of the properties of the thin films and the ScOx/Si interface. The physical characterization was performed by ellipsometry, Fourier transform infrared spectroscopy, x-ray diffraction and transmission electron microscopy. Aluminum gate electrodes were evaporated for metal–insulator–semiconductor (MIS) fabrication. From the electrical characterization of the MIS devices, the density of interfacial defects is found to decrease with deposition pressure, showing a reduced plasma damage of the substrate surface for higher pressures. This is also supported by lower flatband voltage shifts in the capacitance versus voltage hysteresis curves. Sputtering at high pressures (above 100 Pa) reduces the interfacial SiOx formation, according to the infrared spectra. The growth rates decrease with deposition pressure, so a very accurate control of the layer thicknesses could be provided. - Highlights: ► Scandium oxide is considered as a high permittivity dielectric. ► Scandium oxide was deposited on Si by high pressure sputtering. ► Characterization was performed for deposition condition optimization. ► High deposition pressures showed higher film and interface quality.

  12. Sputtered titanium oxynitride coatings for endosseous applications: Physical and chemical evaluation and first bioactivity assays

    Science.gov (United States)

    Banakh, Oksana; Moussa, Mira; Matthey, Joel; Pontearso, Alessandro; Cattani-Lorente, Maria; Sanjines, Rosendo; Fontana, Pierre; Wiskott, Anselm; Durual, Stephane

    2014-10-01

    Titanium oxynitride coatings (TiNxOy) are considered a promising material for applications in dental implantology due to their high corrosion resistance, their biocompatibility and their superior hardness. Using the sputtering technique, TiNxOy films with variable chemical compositions can be deposited. These films may then be set to a desired value by varying the process parameters, that is, the oxygen and nitrogen gas flows. To improve the control of the sputtering process with two reactive gases and to achieve a variable and controllable coating composition, the plasma characteristics were monitored in-situ by optical emission spectroscopy. TiNxOy films were deposited onto commercially pure (ASTM 67) microroughened titanium plates by reactive magnetron sputtering. The nitrogen gas flow was kept constant while the oxygen gas flow was adjusted for each deposition run to obtain films with different oxygen and nitrogen contents. The physical and chemical properties of the deposited films were analyzed as a function of oxygen content in the titanium oxynitride. The potential application of the coatings in dental implantology was assessed by monitoring the proliferation and differentiation of human primary osteoblasts.

  13. Ion beam sputter deposition of TiNi shape memory alloy thin films

    Science.gov (United States)

    Davies, Sam T.; Tsuchiya, Kazuyoshi

    1999-08-01

    The development of functional or smart materials for integration into microsystem is of increasing interest. An example is the shape memory effect exhibited by certain metal alloys which, in principle, can be exploited in the fabrication of micro-scale manipulators or actuators, thereby providing on-chip micromechanical functionality. We have investigated an ion beam sputter deposition process for the growth of TiNi shape memory alloy thin films and demonstrated the required control to produce equiatomic composition, uniform coverage and atomic layer-by-layer growth rates on engineering surfaces. The process uses argon ions at intermediate energy produced by a Kaufman-type ion source to sputter non-alloyed targets of high purity titanium and nickel. Precise measurements of deposition rates allows compositional control during thin film growth. As the sputtering targets and substrates are remote from the discharge plasma, deposition occurs under good vacuum of approximately 10-6 mtorr thus promoting high quality films. Furthermore, the ion beam energetics allow deposition at relatively low substrate temperatures of heat capacity and thermal conductivity as the TiNi shape memory alloy undergoes martensitic to austenitic phase transformations.

  14. Reactive magnetron sputter deposition of superconducting niobium titanium nitride thin films with different target sizes

    CERN Document Server

    Bos, B G C; Haalebos, E A F; Gimbel, P M L; Klapwijk, T M; Baselmans, J J A; Endo, A

    2016-01-01

    The superconducting critical temperature (Tc>15 K) of niobium titanium nitride (NbTiN) thin films allows for low-loss circuits up to 1.1 THz, enabling on-chip spectroscopy and multi-pixel imaging with advanced detectors. The drive for large scale detector microchips is demanding NbTiN films with uniform properties over an increasingly larger area. This article provides an experimental comparison between two reactive d.c. sputter systems with different target sizes: a small target (100 mm diameter) system and a large target (127 mm x 444.5 mm) one, with the aim of improving the film uniformity using the large target system. We focus on the Tc of the films and I-V characteristics of the sputter plasma, and we find that both systems are capable of depositing films with Tc>15 K. We find that these films are deposited within the transition from metallic to compound sputtering, at the point where target nitridation most strongly depends on nitrogen flow. Key in the deposition optimization is to increase the system'...

  15. A hybrid electron cyclotron resonance metal ion source with integrated sputter magnetron for the production of an intense Al+ ion beam

    International Nuclear Information System (INIS)

    A metal ion source prototype has been developed: a combination of magnetron sputter technology with 2.45 GHz electron cyclotron resonance (ECR) ion source technology—a so called magnetron ECR ion source (MECRIS). An integrated ring-shaped sputter magnetron with an Al target is acting as a powerful metal atom supply in order to produce an intense current of singly charged metal ions. Preliminary experiments show that an Al+ ion current with a density of 167 μA/cm2 is extracted from the source at an acceleration voltage of 27 kV. Spatially resolved double Langmuir probe measurements and optical emission spectroscopy were used to study the plasma states of the ion source: sputter magnetron, ECR, and MECRIS plasma. Electron density and temperature as well as Al atom density were determined as a function of microwave and sputter magnetron power. The effect of ECR heating is strongly pronounced in the center of the source. There the electron density is increased by one order of magnitude from 6 × 109 cm−3 to 6 × 1010 cm−3 and the electron temperature is enhanced from about 5 eV to 12 eV, when the ECR plasma is ignited to the magnetron plasma. Operating the magnetron at constant power, it was observed that its discharge current is raised from 1.8 A to 4.8 A, when the ECR discharge was superimposed with a microwave power of 2 kW. At the same time, the discharge voltage decreased from about 560 V to 210 V, clearly indicating a higher plasma density of the MECRIS mode. The optical emission spectrum of the MECRIS plasma is dominated by lines of excited Al atoms and shows a significant contribution of lines arising from singly ionized Al. Plasma emission photography with a CCD camera was used to prove probe measurements and to identify separated plasma emission zones originating from the ECR and magnetron discharge

  16. Magnetron reactively sputtered Ti-DLC coatings on HNBR rubber: The influence of substrate bias

    OpenAIRE

    Bui, X.L.; Pei, Y. T.; De Hosson, J. Th. M.

    2008-01-01

    In this study, Ti-containing diamond-like carbon (Ti-DLC) coatings have been deposited on HNBR (hydrogenated nitrile butadiene) rubber and also on Si wafer as reference via unbalanced magnetroli reactive sputtering from a Ti target in C2H2/Ar plasma. The deposition rates of coatings on rubber and Si wafer were about the same. Columnar structures resulting from a rough interface were often observed in the coatings deposited on rubbers. Only at a high bias voltage of -300 V the coating on HNBR ...

  17. Irreversible thermochromic response of RF sputtered nanocrystalline BaWO4 films for smart window applications

    OpenAIRE

    C. Anil Kumar; T. Santhosh Kumar; D. Pamu

    2015-01-01

    We report irreversible thermochromic behaviour of BaWO4 (BWO) films for the first time. BWO films have been deposited at different substrate temperatures (RT, 200, 400, 600 and 800 °C) using RF magnetron sputtering in pure argon plasma. BWO films deposited at 800 °C exhibit crystalline nature. Also, BWO films deposited in the temperature range of 400 - 600 °C exhibit WO3 as a secondary phase and its weight percentage decreases with an increase in deposition temperature, whereas the films depo...

  18. Spectroscopic Characterization and Simulation of Chemical Sputtering Using the DiMES Porous Plug Injector in DIII-D

    Energy Technology Data Exchange (ETDEWEB)

    McLean, A G; Davis, J W; Stangeby, P C; Brooks, N H; Whyte, D G; Allen, S L; Bray, B D; Brezinsek, S; Elder, J D; Fenstermacher, M E; Groth, M; Haasz, A A; Hollmann, E M; Isler, R; Lasnier, C J; Rudakov, D L; Watkins, J G; West, W P; Wong, C C

    2006-05-15

    A self-contained gas injection system for the Divertor Material Evaluation System (DiMES) on DIII-D has been employed for in-situ study of chemical erosion in the tokamak divertor environment. The Porous Plug Injector (PPI) releases methane, a major component of molecular influx due to chemical sputtering of graphite, from the tile surface into the plasma at a controlled rate through a porous graphite surface. Perturbation to local plasma is minimized, while also simulating the immediate environment of methane molecules released from a solid graphite surface. The release rate was chosen to be of the same order of magnitude as natural sputtering. Photon efficiencies of CH{sub 4} for measured local plasma conditions are reported. The contribution of chemical versus physical sputtering to the source of C{sup +} at the target is assessed through measurement of CII and CD/CH band emissions during release of CH{sub 4} from the PPI, and due to intrinsic emission.

  19. Origin of the energetic ion beams at the substrate generated during high power pulsed magnetron sputtering of titanium

    CERN Document Server

    Maszl, Christian; Benedikt, Jan; von Keudell, Achim

    2013-01-01

    High power pulsed magnetron sputtering (HiPIMS) plasmas generate energetic metal ions at the substrate as a major difference to conventional direct current magnetron sputtering. The origin of these energetic ions in HiPIMS is still an open issue, which is unraveled by using three fast diagnostics: time resolved mass spectrometry with a temporal resolution of 2 $\\mu$s, phase resolved optical emission spectroscopy with 1 $\\mu$s and the rotating shutter experiment with a resolution of 50 $\\mu$s. A power scan from dcMS-like to HiPIMS plasmas was performed, with a 2-inch magnetron and a titanium target as sputter source and argon as working gas. Clear differences in the transport as well in the energetic properties of Ar$^+$, Ar$^{2+}$, Ti$^+$ and Ti$^{2+}$ were observed. For discharges with highest peak power densities a high energetic group of Ti$^{+}$ and Ti$^{2+}$ could be identified. A cold group of ions is always present. It is found that hot ions are observed only, when the plasma enters the spokes regime, ...

  20. ICP-Enhanced Sputter Deposition for Reactivity Control and Low-Temperature Formation of a-IGZO Films

    Science.gov (United States)

    Setsuhara, Yuichi; Nakata, Keitaro; Satake, Yoshikatsu; Takenaka, Kosuke; Uchida, Giichiro; Ebe, Akinori

    2015-09-01

    Inductively coupled plasma (ICP) - enhanced sputter deposition for a-IGZO channel TFTs fabrication have been performed. This advantage of fine control of reactivity during the deposition process is of great significance for film deposition of the transparent amorphous oxide semiconductor, a-InGaZnOx (a-IGZO), whose electrical properties are significantly sensitive to the reactivity during the film deposition. The a-IGZO film deposition with addition of H2 gas were performed in order to control oxidation process during a-IGZO film formation via balance between oxidation-reduction. The results of optical emission spectrum indicate the possibility for the suppression of oxidation by oxygen atoms of a-IGZO films during deposition due to addition of H2 gas. The characteristics of TFT fabricated with IGZO film via plasma-enhanced magnetron sputter deposition system have been investigated. The result exhibits that the possibility of expanding process window for control of balance between oxidization and reduction by addition of H2 gas. The a-IGZO channel TFTs fabricated plasma-enhanced reactive sputtering system with addition of H2 gas exhibited good performance of field-effect mobility 15.3 cm2(Vs)-1 and subthreshold gate voltage swing (S) of 0.48 V decade-1. This work was partly supported by ASTEP (JST) and Grant-in-Aid for Challenging Exploratory Research (JSPS).

  1. Monitoring of bright blazars with MAGIC telescope

    OpenAIRE

    Hsu, C. C.; Satalecka, K.; Thom, M; Backes, M.; Bernardini, E.; Bonnoli, G.; Galante, N.; Goebel, F; Lindfors, E.; Majumdar, P.; Stamerra, A.; Wagner, R. M.

    2009-01-01

    Blazars, a class of Active Galactic Nuclei (AGN) characterized by a close orientation of their relativistic outflows (jets) towards the line of sight, are a well established extragalactic TeV $\\gamma$-ray emitters. Since 2006, three nearby and TeV bright blazars, Markarian (Mrk) 421, Mrk 501 and 1ES 1959+650, are regularly observed by the MAGIC telescope with single exposures of 30 to 60 minutes. The sensitivity of MAGIC allows to establish a flux level of 30% of the Crab flux for each such o...

  2. The Bright Quasar 3C 273

    OpenAIRE

    Courvoisier, Thierry J. -L.

    1998-01-01

    We review the observed properties of the bright quasar 3C~273 and discuss the implications of these observations for the emission processes and in view of gaining a more global understanding of the object. Continuum and line emission are discussed. The emission from the radio domain to gamma rays are reviewed. Emphasis is given to variability studies across the spectrum as a means to gain some understanding on the relationships between the emission components. 3C~273 has a small scale jet and...

  3. Quantum bright soliton in a disorder potential

    OpenAIRE

    Sacha, K.; Delande, D; Zakrzewski, J.

    2009-01-01

    At very low temperature, a quasi-one-dimensional ensemble of atoms with attractive interactions tend to form a bright soliton. When exposed to a sufficiently weak external potential, the shape of the soliton is not modified, but its external motion is affected. We develop in detail the Bogoliubov approach for the problem, treating, in a non-perturbative way, the motion of the center of mass of the soliton. Quantization of this motion allows us to discuss its long time properties. In particula...

  4. Plasma cell vulvitis

    Directory of Open Access Journals (Sweden)

    Pravin R Bharatia

    2015-01-01

    Full Text Available Plasma cell vulvitis is a very rare inflammatory disorder of vulva, characterized by a bright-red mucosal lesion of significant chronicity, which may be symptomatic. Very few case studies of this condition are reported in literature. We describe one such classical patient, who presented with slight dyspareunia. The diagnosis was confirmed on histopathological examination. It is important for clinicians to accurately diagnose this alarming condition in time.

  5. Selection effects in the bivariate brightness distribution for spiral galaxies

    International Nuclear Information System (INIS)

    The joint distribution of total luminosity and characteristic surface brightness (the bivariate brightness distribution) is investigated for a complete sample of spiral galaxies in the Virgo cluster. The influence of selection and physical limits of various kinds on the apparent distribution are detailed. While the distribution of surface brightness for bright galaxies may be genuinely fairly narrow, faint galaxies exist right across the (quite small) range of accessible surface brightnesses so no statement can be made about the true extent of the distribution. The lack of high surface brightness bright galaxies in the Virgo sample relative to an overall RC2 sample (mostly field galaxies) supports the contention that the star-formation rate is reduced in the inner region of the cluster for environmental reasons. (author)

  6. Deposition of thin titanium-copper films with antimicrobial effect by advanced magnetron sputtering methods

    International Nuclear Information System (INIS)

    The antibacterial effect of thin titanium-copper (Ti-Cu) films combined with sufficient growth of human osteoblastic cells is reported in the paper. Thin Ti-Cu films were prepared by three different plasma-assisted magnetron sputtering methods: direct current magnetron sputtering (dc-MS), dual magnetron sputtering (dual-MS) as well as dual high power impulse magnetron sputtering (dual-HiPIMS). The antimicrobial effect is caused by copper released from the metallic Ti-Cu films, which was measured by atomic absorption spectroscopy (AAS). The copper release is influenced by the chemical and physical properties of the deposited films and was investigated by X-ray diffractometry and X-ray reflectometry (GIXD and XR) techniques. It was found that, within the first 24 h the amount of Cu released from dual-HiPIMS films (about 250 μg) was much higher than from dc-MS and dual-MS films. In vitro planktonic growth tests on Ti-Cu surfaces for Staphylococcus epidermidis and S. aureus demonstrated the killing of both bacteria using the Ti-Cu films prepared using the dual-HiPIMS technique. The killing effects on biofilm bacteria were less obvious. After the total release of copper from the Ti-Cu film the vitality of exposed human osteoblast MG-63 cells increased significantly. An initial cytotoxic effect followed by the growth of osteoblastic cells was demonstrated. The cytotoxic effect combined with growth of osteoblastic cells could be used in joint replacement surgery to reduce the possibility of infection and to increase adoption of the implants. Highlights: → Ti-Cu films with significant cytotoxic effect were prepared by dual-HiPIMS technique. → The cytotoxic effect is caused by total release of copper species from thin films. → The copper release is influenced by crystallography and chemical properties of thin films. → Sufficient growth of osteoblastic cells follows after copper release.

  7. At Bright Band Inside Victoria Crater

    Science.gov (United States)

    2007-01-01

    A layer of light-toned rock exposed inside Victoria Crater in the Meridiani Planum region of Mars appears to mark where the surface was at the time, many millions of years ago, when an impact excavated the crater. NASA's Mars Exploration Rover Opportunity drove to this bright band as the science team's first destination for the rover during investigations inside the crater. Opportunity's left front hazard-identification camera took this image just after the rover finished a drive of 2.25 meters (7 feet, 5 inches) during the rover's 1,305th Martian day, or sol, (Sept. 25, 2007). The rocks beneath the rover and its extended robotic arm are part of the bright band. Victoria Crater has a scalloped shape of alternating alcoves and promontories around the crater's circumference. Opportunity descended into the crater two weeks earlier, within an alcove called 'Duck Bay.' Counterclockwise around the rim, just to the right of the arm in this image, is a promontory called 'Cabo Frio.'

  8. Reactive sputter deposition of boron nitride

    International Nuclear Information System (INIS)

    The preparation of fully dense, boron targets for use in planar magnetron sources has lead to the synthesis of Boron Nitride (BN) films by reactive rf sputtering. The deposition parameters of gas pressure, flow and composition are varied along with substrate temperature and applied bias. The films are characterized for composition using Auger electron spectroscopy, for chemical bonding using Raman spectroscopy and for crystalline structure using transmission electron microscopy. The deposition conditions are established which lead to the growth of crystalline BN phases. In particular, the growth of an adherent cubic BN coating requires 400--500 C substrate heating and an applied -300 V dc bias

  9. Coating metals on micropowders by magnetron sputtering

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    Magnetron sputtering was used to coat various metals on micropowder surfaces. By using this method, the fine particles are better dispersed and can therefore be coated more homogeneously. The micro-powders used include cenospheres from fly ash of coal-burning electric power plants (diameter 40-200 μm and particle density 0.7±0.1 g/cm3), as well as carborundum particles of different sizes. Aluminum, silver, copper, cobalt and nickel were used as the coating metals. Tests showed that the coated metal film was compact adhering tightly on the base powders, and the coated powders possess adequate flow properties.

  10. Niobium sputter-coated copper resonators

    CERN Document Server

    Benvenuti, Cristoforo; Campisi, I E; Darriulat, Pierre; Durand, C; Peck, M A; Russo, R; Valente, A M

    1998-01-01

    Niobium sputter-coated copper resonators are successfully employed in operating particle accelerators, the most outstanding example being LEP2 at CERN. In this review we present recent progress in the understanding of the basic principles governing their behaviour, based on an extensive R&D programme carried out at CERN on 1.5 GHz resonators operated in the TM010 mode. At the present stage of the s tudy, no fundamental limitation has been found which would prevent the use of this technology for future high-field, high-Q accelerating cavities.

  11. Observational Test for the Solar Wind Sputtering Origin of the Moon's Extended Sodium Atmosphere

    Science.gov (United States)

    Mendillo, Michael; Baumgardner, Jeffrey; Wilson, Jody

    1999-01-01

    We present observations of the lunar sodium atmosphere during four lunar eclipses between 1993 and 1997. With the Moon inside the magnetosphere, and therefore shielded from solar wind impact, we find its Na atmosphere to be comparable in abundance to cases near first and third quarter, implying that solar wind ion sputtering is not a significant source of the atmosphere. The atmosphere is azimuthally symmetric, and it extends beyond the field of view of our observations (∼12 Lunar radii). The average sodium atmospheric profile is best characterized by anr-1.4radial power law, close to that for an entirely escaping atmosphere. The average extrapolated near-surface brightness of 1145 rayleighs is in agreement with the near-surface polar brightness seen at quarter Moon. This corresponds to a line-of-sight neutral column content of 1.4×109Na atoms cm-2above the limb and a density of ∼3 atoms cm-3above the surface, decreasing asr-2.4. We suggest that a blend of sources (15% micrometeor impact uniform over the surface and 85% photon-induced desorption dependent on solar-zenith angle over the sunlit hemisphere) could account for the observed extended sodium atmospheres.

  12. The effect of the oxygen concentration and the rf power on the zinc oxide films properties deposited by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Sayago, I. [Laboratorio de Sensores IFA-CSIC, Serrano 144, 28006 Madrid (Spain); Aleixandre, M. [Laboratorio de Sensores IFA-CSIC, Serrano 144, 28006 Madrid (Spain); Ares, L. [Laboratorio de Sensores IFA-CSIC, Serrano 144, 28006 Madrid (Spain); Fernandez, M.J. [Laboratorio de Sensores IFA-CSIC, Serrano 144, 28006 Madrid (Spain); Santos, J.P. [Laboratorio de Sensores IFA-CSIC, Serrano 144, 28006 Madrid (Spain); Gutierrez, J. [Laboratorio de Sensores IFA-CSIC, Serrano 144, 28006 Madrid (Spain); Horrillo, M.C. [Laboratorio de Sensores IFA-CSIC, Serrano 144, 28006 Madrid (Spain)]. E-mail: carmenhorrillo@ifa.cetef.csic.es

    2005-05-30

    The influence of the oxygen concentration and the rf power variation on the zinc oxide films structural properties were studied. ZnO films were deposited on silicon substrate by rf magnetron sputtering in reactive plasma using a zinc oxide target. Crystalline structures and roughness characteristics of the films were investigated by X-ray diffraction (XRD) and atomic force microscopy (AFM) measurements, respectively. Deposition conditions were optimized to obtain films of good quality suitable for the fabrication of surface acoustic wave (SAW) devices. The optimal parameters to obtain a good piezoelectric material have been: rf power 50 W and reactive plasma.

  13. Density effects in sputtering at normal and oblique ion bombardment

    International Nuclear Information System (INIS)

    The author's earlier work on computer simulation of density effects in sputtering is extended to higher energies and oblique incidence of bombarding ions. Sputtering of amorphous Ge with an artificially varied density by 0.05-100 keV Ar ions is considered in great detail and the influence of density on the yield, angular and energy distributions of sputtered atoms is analysed. It is shown that at normal incidence the sputtering yield increases with density as Np, where p=0.56, 0.43, 0.28 and 0.24 at E0=0.1, 1, 10 and 100 keV, respectively. At grazing incidence the sputtering yield is a decreasing function of N due to surface scattering of bombarding ions (the negative density effect). This finding lent impetus to a successful search for the density effects in sputtering of different elemental targets at grazing bombardment. Overall, the effects of density on the main sputtering characteristics turn out to be significant, which contrasts with the predictions of a number of analytical theories of sputtering

  14. Sputtering of solid nitrogen by keV helium ions

    DEFF Research Database (Denmark)

    Ellegaard, O.; Schou, Jørgen; Sørensen, H.; Pedrys, R.; Warczak, B.

    Solid nitrogen has become a standard material among the frozen molecular gases for electronic sputtering. We have combined measurements of sputtering yields and energy spectra from nitrogen bombarded by 4-10 keV helium ions. The data show that the erosion is electronic rather than knockon...

  15. Sputtering of solid nitrogen by keV helium ions

    DEFF Research Database (Denmark)

    Ellegaard, O.; Schou, Jørgen; Sørensen, H.;

    1993-01-01

    Solid nitrogen has become a standard material among the frozen molecular gases for electronic sputtering. We have combined measurements of sputtering yields and energy spectra from nitrogen bombarded by 4-10 keV helium ions. The data show that the erosion is electronic rather than knockon...

  16. High Brightness Neutron Source for Radiography. Final report

    International Nuclear Information System (INIS)

    This research and development program was designed to improve nondestructive evaluation of large mechanical objects by providing both fast and thermal neutron sources for radiography. Neutron radiography permits inspection inside objects that x-rays cannot penetrate and permits imaging of corrosion and cracks in low-density materials. Discovering of fatigue cracks and corrosion in piping without the necessity of insulation removal is possible. Neutron radiography sources can provide for the nondestructive testing interests of commercial and military aircraft, public utilities and petrochemical organizations. Three neutron prototype neutron generators were designed and fabricated based on original research done at the Lawrence Berkeley National Laboratory (LBNL). The research and development of these generators was successfully continued by LBNL and Adelphi Technology Inc. under this STTR. The original design goals of high neutron yield and generator robustness have been achieved, using new technology developed under this grant. In one prototype generator, the fast neutron yield and brightness was roughly 10 times larger than previously marketed neutron generators using the same deuterium-deuterium reaction. In another generator, we integrate a moderator with a fast neutron source, resulting in a high brightness thermal neutron generator. The moderator acts as both conventional moderator and mechanical and electrical support structure for the generator and effectively mimics a nuclear reactor. In addition to the new prototype generators, an entirely new plasma ion source for neutron production was developed. First developed by LBNL, this source uses a spiral antenna to more efficiently couple the RF radiation into the plasma, reducing the required gas pressure so that the generator head can be completely sealed, permitting the possible use of tritium gas. This also permits the generator to use the deuterium-tritium reaction to produce 14-MeV neutrons with increases

  17. New Distant Comet Headed for Bright Encounter

    Science.gov (United States)

    1995-08-01

    How Impressive Will Comet Hale-Bopp Become in 1997 ? A very unusual comet was discovered last month, on its way from the outer reaches of the solar system towards the Sun. Although it is still situated beyond the orbit of Jupiter, it is so bright that it can be observed in even small telescopes. It has been named `Hale-Bopp' after the discoverers and is already of great interest to cometary astronomers. No less than seven telescopes have been used at the ESO La Silla observatory for the first observations of the new object. Together with data gathered at other sites, their aim is to elucidate the nature of this comet and also to determine whether there is reason to hope that it will become a bright and beautiful object in the sky from late 1996 and well into 1997. Further observations are now being planned at ESO and elsewhere to monitor closely the behaviour of this celestial visitor during the coming months. Discovery circumstances The comet was discovered on 23 July 1995, nearly simultaneously by two American amateur astronomers, Alan Hale of Cloudcroft (New Mexico) and Thomas Bopp of Glendale (Arizona). Although the chronology is slightly uncertain, it appears that Hale first saw it some 10 - 20 minutes before Bopp, at 06:10 - 06:15 UT on that day. In any case, he informed the IAU Central Bureau for Astronomical Telegrams (CBAT) in Cambridge (Massachussetts) about his discovery by email already at 06:50 UT, while Bopp's message was filed more than 2 hours later, after he had driven back to his home, 140 km from where he had been observing. Upon receipt of these messages, Brian Marsden at the CBAT assigned the designation `1995 O1' (indicating that it is the first comet found in the second half of July 1995). After further sightings had been made by other observers, and according to the venerable astronomical tradition, the new object was named after the discoverers. The magnitude, reported as 10.5 by Hale, is not unusual for a comet that is discovered within

  18. Sputtering at grazing ion incidence: Influence of adatom islands

    International Nuclear Information System (INIS)

    When energetic ions impinge at grazing incidence onto an atomically flat terrace, they will not sputter. However, when adatom islands (containing N atoms) are deposited on the surface, they induce sputtering. We investigate this effect for the specific case of 83 deg. -incident 5 keV Ar ions on a Pt (111) surface by means of molecular-dynamics simulation and experiment. We find that - for constant coverage Θ - the sputter yield has a maximum at island sizes of N congruent with 10-20. A detailed picture explaining the decline of the sputter yield toward larger and smaller island sizes is worked out. Our simulation results are compared with dedicated sputtering experiments, in which a coverage of Θ=0.09 of Pt adatoms are deposited onto the Pt (111) surface and form islands with a broad distribution around a most probable size of N congruent with 20.

  19. Numerical evaluation of a 13.5-nm high-brightness microplasma extreme ultraviolet source

    Energy Technology Data Exchange (ETDEWEB)

    Hara, Hiroyuki, E-mail: mt146648@cc.utsunomiya-u.ac.jp; Arai, Goki; Dinh, Thanh-Hung; Higashiguchi, Takeshi, E-mail: higashi@cc.utsunomiya-u.ac.jp [Department of Electrical and Electronic Engineering, Faculty of Engineering and Center for Optical Research and Education (CORE), Utsunomiya University, Yoto 7-1-2, Utsunomiya, Tochigi 321-8585 (Japan); Jiang, Weihua [Department of Electrical Engineering, Nagaoka University of Technology, Nagaoka, Niigata 940-2188 (Japan); Miura, Taisuke; Endo, Akira [HiLASE Centre, Institute of Physics CAS, Za radnicí 828, 252 41 Dolní Břežany (Czech Republic); Ejima, Takeo [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1, Katahira, Aoba-ku, Sendai 980-8577 (Japan); Li, Bowen [School of Nuclear Science and Technology, Lanzhou University, Lanzhou 730000 (China); Dunne, Padraig; O' Sullivan, Gerry [School of Physics, University College Dublin, Belfield, Dublin 4 (Ireland); Sunahara, Atsushi [Institute for Laser Technology, 2-6 Yamada-oka, Suita, Osaka 565-0871 (Japan)

    2015-11-21

    The extreme ultraviolet (EUV) emission and its spatial distribution as well as plasma parameters in a microplasma high-brightness light source are characterized by the use of a two-dimensional radiation hydrodynamic simulation. The expected EUV source size, which is determined by the expansion of the microplasma due to hydrodynamic motion, was evaluated to be 16 μm (full width) and was almost reproduced by the experimental result which showed an emission source diameter of 18–20 μm at a laser pulse duration of 150 ps [full width at half-maximum]. The numerical simulation suggests that high brightness EUV sources should be produced by use of a dot target based microplasma with a source diameter of about 20 μm.

  20. Numerical evaluation of a 13.5-nm high-brightness microplasma extreme ultraviolet source

    International Nuclear Information System (INIS)

    The extreme ultraviolet (EUV) emission and its spatial distribution as well as plasma parameters in a microplasma high-brightness light source are characterized by the use of a two-dimensional radiation hydrodynamic simulation. The expected EUV source size, which is determined by the expansion of the microplasma due to hydrodynamic motion, was evaluated to be 16 μm (full width) and was almost reproduced by the experimental result which showed an emission source diameter of 18–20 μm at a laser pulse duration of 150 ps [full width at half-maximum]. The numerical simulation suggests that high brightness EUV sources should be produced by use of a dot target based microplasma with a source diameter of about 20 μm

  1. On reactive high power impulse magnetron sputtering

    Science.gov (United States)

    Gudmundsson, J. T.

    2016-01-01

    High power impulse magnetron sputtering (HiPIMS) is an ionized physical vapor deposition (IPVD) technique that is particularly promising for reactive sputtering applications. However, there are few issues that have to be resolved before the full potential of this technique can be realized. Here we give an overview of the key experimental findings for the reactive HiPIMS discharge. An increase in the discharge current is commonly observed with increased partial pressure of the reactive gas or decreased repetition pulse frequency. There are somewhat conflicting claims regarding the hysteresis effect in the reactive HiPIMS discharge as some report reduction or elimination of the hysteresis effect while others claim a feedback control is essential. The ion energy distribution of the metal ion and the atomic ion of the reactive gas are similar and extend to very high energies while the ion energy distribution of the working gas and the molecular ion of the reactive gas are similar and are much less energetic.

  2. Growth of high quality YBa2Cu3O7-δ and PrBa2Cu3O7-δ films with an on-axis RF sputtering configuration

    International Nuclear Information System (INIS)

    Controllable fabrication of highly oriented c-axis YBCO thin films with good electrical properties, inplane epitaxy and smooth surfaces is required for the preparation of multilayers or superlattices of YBa2Cu3O7-δ/PrBa2Cu3O7-δ (YBCO/PBCO). In order to realize this type of heterostructures the epitaxial growth of c-axis thin films of YBCO and PBCO deposited by on-axis RF magnetron sputtering was studied. However, the YBCO films made in a planar RF sputtering system often show degraded superconducting (SC) properties. It is generally admitted that this is due to the presence of highly energetic particles (E.P.) in the sputtering plasma (1). They are at the origin of a bombardment producing selective resputtering of the growing film that results in film's strong off-stoichiometry and disturbed crystallinity explaining their weak superconductivity. The aim of our work was to determine the nature of the perturbation induced by the sputtering plasma and the type of defects created in the film by the E.P., by studying YBCO lattice with Raman spectrometry and other different techniques. We show that the presence of highly E.P. in the sputtering plasma principally disturb the oxygen sublattice by a bombardement mechanism inducing oxygen vacancies in the CuO chains and at the apex site. Consequently, the SC properties of the YBCO films are determined by the quantity of these defects. We find that the amount of the E.P. is reduced by increasing the plasma total pressure. So, the quantity of the oxygen vacancies decreases and the films display better structural and electrical properties. The same sputtering growth process was found for the PBCO films. Under the optimum growth conditions, given by higher total pressure, high quality c-axis oriented YBCO and PBCO films were obtained. Finally, multilayers and superlattices made by sequential sputtering were also elaborated in this work. (orig.)

  3. Sputtering effect of low-energy ions on biological target: The analysis of sputtering product of urea and capsaicin

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Lili [Key Laboratory of Ion Beam Bio-Engineering, Institute of Technical Biology and Agriculture Engineering of Chinese Academy of Sciences, Shushanhu Road 350, Hefei 230031 (China); Xu, Xue [Rice Research Institute, Anhui Academy of Agricultural Sciences, Nongke South Road 40, Hefei 230031 (China); Wu, Yuejin, E-mail: yjwu@ipp.ac.cn [Key Laboratory of Ion Beam Bio-Engineering, Institute of Technical Biology and Agriculture Engineering of Chinese Academy of Sciences, Shushanhu Road 350, Hefei 230031 (China)

    2013-08-01

    Sputtering is a process whereby atoms are ejected from a solid target material due to bombardment of the target by energetic particles. Recent years, ion implantation was successfully applied to biological research based on the fragments sputtering and form open paths in cell structure caused by ion sputtering. In this study, we focused on urea and chilli pepper pericarp samples implanted with N{sup +} and Ar{sup +} ions. To investigate the sputtering effect, we designed a collecting unit containing a disk sample and a glass pipe. The urea content and capsaicin content recovered from glass pipes were adopted to represent the sputtering product. The result of urea showed that the sputtering effect is positively correlated with the ion energy and dose, also affected by the ion type. The result of capsaicin was different from that of urea at 20 keV and possibly due to biological complex composition and structure. Therefore the sputtering yield depended on both the parameters of incident ions and the state of target materials. The sputtering yield of urea was also simulated by computational method achieved through the TRIM program. The trajectories of primary and recoiled atoms were calculated on the basis of the binary collision approximation using Monte Carlo method. The experimental results were much higher than the calculated results. The possible explanation is that in the physical model the target were assumed as a disordered lattice and independent atoms, which is much less complicated than that of the biological models.

  4. Sputtering effect of low-energy ions on biological target: The analysis of sputtering product of urea and capsaicin

    Science.gov (United States)

    Zhang, Lili; Xu, Xue; Wu, Yuejin

    2013-08-01

    Sputtering is a process whereby atoms are ejected from a solid target material due to bombardment of the target by energetic particles. Recent years, ion implantation was successfully applied to biological research based on the fragments sputtering and form open paths in cell structure caused by ion sputtering. In this study, we focused on urea and chilli pepper pericarp samples implanted with N+ and Ar+ ions. To investigate the sputtering effect, we designed a collecting unit containing a disk sample and a glass pipe. The urea content and capsaicin content recovered from glass pipes were adopted to represent the sputtering product. The result of urea showed that the sputtering effect is positively correlated with the ion energy and dose, also affected by the ion type. The result of capsaicin was different from that of urea at 20 keV and possibly due to biological complex composition and structure. Therefore the sputtering yield depended on both the parameters of incident ions and the state of target materials. The sputtering yield of urea was also simulated by computational method achieved through the TRIM program. The trajectories of primary and recoiled atoms were calculated on the basis of the binary collision approximation using Monte Carlo method. The experimental results were much higher than the calculated results. The possible explanation is that in the physical model the target were assumed as a disordered lattice and independent atoms, which is much less complicated than that of the biological models.

  5. Sputtering effect of low-energy ions on biological target: The analysis of sputtering product of urea and capsaicin

    International Nuclear Information System (INIS)

    Sputtering is a process whereby atoms are ejected from a solid target material due to bombardment of the target by energetic particles. Recent years, ion implantation was successfully applied to biological research based on the fragments sputtering and form open paths in cell structure caused by ion sputtering. In this study, we focused on urea and chilli pepper pericarp samples implanted with N+ and Ar+ ions. To investigate the sputtering effect, we designed a collecting unit containing a disk sample and a glass pipe. The urea content and capsaicin content recovered from glass pipes were adopted to represent the sputtering product. The result of urea showed that the sputtering effect is positively correlated with the ion energy and dose, also affected by the ion type. The result of capsaicin was different from that of urea at 20 keV and possibly due to biological complex composition and structure. Therefore the sputtering yield depended on both the parameters of incident ions and the state of target materials. The sputtering yield of urea was also simulated by computational method achieved through the TRIM program. The trajectories of primary and recoiled atoms were calculated on the basis of the binary collision approximation using Monte Carlo method. The experimental results were much higher than the calculated results. The possible explanation is that in the physical model the target were assumed as a disordered lattice and independent atoms, which is much less complicated than that of the biological models

  6. Brightness temperature for 166 radio sources

    Institute of Scientific and Technical Information of China (English)

    Jun-Hui Fan; Yong Huang; Yu-Hai Yuan; Jiang-He Yang; Yi Liu; Jun Tao; Ying Gao; Tong-Xu Hua; Rui-Guang Lin; Jiang-Shui Zhang; Jing-Yi Zhang; Yi-Ping Qin

    2009-01-01

    Using the database of the University of Michigan Radio Astronomy Observatory (UMRAO) at three radio frequencies (4.8, 8 and 14.5 GHz), we determined the short-term variability timescales for 166 radio sources. The timescales are 0.15d (2007+777) to 176.17d (0528-250) with an average timescale of △tobs=17.1±16.5d for the whole sample. The timescales are used to calculate the brightness temperatures, TB. The value of log TB is in the range of log TB = 10.47 to 19.06 K. In addition, we also estimated the boosting factor for the sources. The correlation between the polarization and the Doppler factor is also discussed.

  7. Modelling Solar and Stellar Brightness Variabilities

    Science.gov (United States)

    Yeo, K. L.; Shapiro, A. I.; Krivova, N. A.; Solanki, S. K.

    2016-04-01

    Total and spectral solar irradiance, TSI and SSI, have been measured from space since 1978. This is accompanied by the development of models aimed at replicating the observed variability by relating it to solar surface magnetism. Despite significant progress, there remains persisting controversy over the secular change and the wavelength-dependence of the variation with impact on our understanding of the Sun's influence on the Earth's climate. We highlight the recent progress in TSI and SSI modelling with SATIRE. Brightness variations have also been observed for Sun-like stars. Their analysis can profit from knowledge of the solar case and provide additional constraints for solar modelling. We discuss the recent effort to extend SATIRE to Sun-like stars.

  8. High brightness angled cavity quantum cascade lasers

    International Nuclear Information System (INIS)

    A quantum cascade laser (QCL) with an output power of 203 W is demonstrated in pulsed mode at 283 K with an angled cavity. The device has a ridge width of 300 μm, a cavity length of 5.8 mm, and a tilt angle of 12°. The back facet is high reflection coated, and the front facet is anti-reflection coated. The emitting wavelength is around 4.8 μm. In distinct contrast to a straight cavity broad area QCL, the lateral far field is single lobed with a divergence angle of only 3°. An ultrahigh brightness value of 156 MW cm−2 sr−1 is obtained, which marks the brightest QCL to date

  9. Considerations for high-brightness electron sources

    International Nuclear Information System (INIS)

    Particle accelerators are now used in many areas of physics research and in industrial and medical applications. New uses are being studied to address major societal needs in energy production, materials research, generation of intense beams of radiation at optical and suboptical wavelengths, treatment of various kinds of waste, and so on. Many of these modern applications require a high intensity beam at the desired energy, along with a very good beam quality in terms of the beam confinement, aiming, or focusing. Considerations for ion and electron accelerators are often different, but there are also many commonalties, and in fact, techniques derived for one should perhaps more often be considered for the other as well. We discuss some aspects of high-brightness electron sources here from that point of view. 6 refs

  10. High brightness angled cavity quantum cascade lasers

    Energy Technology Data Exchange (ETDEWEB)

    Heydari, D.; Bai, Y.; Bandyopadhyay, N.; Slivken, S.; Razeghi, M., E-mail: razeghi@eecs.northwestern.edu [Center for Quantum Devices, Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, Illinois 60208 (United States)

    2015-03-02

    A quantum cascade laser (QCL) with an output power of 203 W is demonstrated in pulsed mode at 283 K with an angled cavity. The device has a ridge width of 300 μm, a cavity length of 5.8 mm, and a tilt angle of 12°. The back facet is high reflection coated, and the front facet is anti-reflection coated. The emitting wavelength is around 4.8 μm. In distinct contrast to a straight cavity broad area QCL, the lateral far field is single lobed with a divergence angle of only 3°. An ultrahigh brightness value of 156 MW cm{sup −2 }sr{sup −1} is obtained, which marks the brightest QCL to date.

  11. Dark Skies, Bright Kids Year 7

    Science.gov (United States)

    Bittle, Lauren E.; Johnson, Kelsey E.; Borish, H. Jacob; Burkhardt, Andrew; Firebaugh, Ariel; Hancock, Danielle; Rochford Hayes, Christian; Linden, Sean; Liss, Sandra; Matthews, Allison; Prager, Brian; Pryal, Matthew; Sokal, Kimberly R.; Troup, Nicholas William; Wenger, Trey

    2016-01-01

    We present updates from our seventh year of operation including new club content, continued assessments, and our fifth annual Star Party. Dark Skies, Bright Kids (DSBK) is an entirely volunteer-run outreach organization based out of the Department of Astronomy at the University of Virginia. Our core mission is to enhance elementary science education and literacy in Central Virginia through fun, hands-on activities that introduce basic Astronomy concepts. Our primary focus is hosting an 8-10 week after-school astronomy club at underserved elementary and middle schools. Each week, DSBK volunteers take the role of coaches to introduce astronomy-related concepts ranging from the Solar System to galaxies to astrobiology, and to lead students in interactive learning activities. Another hallmark of DSBK is hosting our Annual Central Virginia Star Party, a free event open to the community featuring star-gazing and planetarium shows.

  12. Moon night sky brightness simulation for the Xinglong station

    International Nuclear Information System (INIS)

    Using a sky brightness monitor at the Xinglong station of National Astronomical Observatories, Chinese Academy of Sciences, we collected data from 22 dark clear nights and 90 moon nights. We first measured the sky brightness variation with time for dark nights and found a clear correlation between sky brightness and human activity. Then with a modified sky brightness model of moon nights and data from these nights, we derived the typical value for several important parameters in the model. With these results, we calculated the sky brightness distribution under a given moon condition for the Xinglong station. Furthermore, we simulated the sky brightness distribution of a moon night for a telescope with a 5° field of view (such as LAMOST). These simulations will be helpful for determining the limiting magnitude and exposure time, as well as planning the survey for LAMOST during moon nights

  13. Simulation of spectroscopic patterns obtained in W/C test-limiter sputtering experiment at TEXTOR

    International Nuclear Information System (INIS)

    On the TEXTOR tokamak various experiments aimed at investigation of tungsten erosion and transport are performed. In one experiment a spherical W/C twin limiter positioned close to the last-closed flux surface in the near scrape-off layer was exposed to a number of comparable plasma discharges with stepwise variations of edge plasma parameters. Spatial distribution of tungsten and carbon light emission was recorded with two dimensional CCD cameras and spectrometer systems with high spectral and spatial resolution. Penetration depths, tungsten sputtering fluxes and erosion yields were measured. Comparison between experimental data and the results of modelling with the 3D Monte-Carlo code ERO is performed. The main objective of this study was to test the adequacy of the existing atomic data for neutral tungsten. The modelled penetration depths of the light emission of tungsten are a factor of 2–3 smaller than in experiment, which may indicate the overestimation of ionization rates

  14. Surface treatment method for 1/f noise suppression in reactively sputtered nickel oxide film

    Science.gov (United States)

    Kim, Dong Soo; Park, Seung-Man; Lee, Hee Chul

    2012-07-01

    A surface treatment method combined with O2 plasma treatment and Ar+ bombardment is proposed for 1/f noise suppression in a reactively sputtered NiO film as a micro-bolometer sensing material. The 1/f noise power spectral density on a sample prepared by the proposed surface treatment method prior to the contact formation is suppressed to a level roughly 18 times lower than that on an untreated sample. The improved noise characteristic can be ascribed to the cooperative effects of the two steps in the proposed surface treatment method. In its effects, the oxygen plasma treatment is supposed to increase the Ni3+ component on the surface of the NiO film, which in turn increases the hole concentration on the surface. Additional Ar+ bombardment is expected to remove contaminants on the surface of the NiO film, leading to a low contact resistance.

  15. Variability, Brightness Temperature, Superluminal Motion, Doppler Boosting, and Related Issues

    CERN Document Server

    Kellermann, K I

    2003-01-01

    We review the observations of rapid flux density variations in compact radio sources, and discuss the inverse Compton limit to the maximum brightness temperature of incoherent synchrotron sources in comparison with recent VLBA observations. The apparent agreement of the theoretical brightness temperature limit due to inverse Compton cooling and the brightness temperatures observed by early VLBI observations appears to have been fortuitous. VLBA observations have greatly improved the quality of the data, but many of the early issues remain unresolved.

  16. Annular bright and dark field imaging of soft materials

    International Nuclear Information System (INIS)

    Here polyethylene, as an example of an important soft material, was studied by STEM annular bright and dark field. The contrast as function of the probe size/shape and the detector collection angle are discussed. The results are compared to conventional bright field transmission electron microscopy, electron energy filtered imaging and energy dispersive spectroscopy mapping. Annular bright and dark field gave a higher contrast than conventional transmission and analytical mapping techniques

  17. Research on Brightness Measurement of Intense Electron Beam

    CERN Document Server

    Wang, Yuan; Zhang, Huang; Yang, GuoJun; Li, YiDing; Li, Jin

    2015-01-01

    The mostly research fasten on high emission density of injector to study electron beam's brightness in LIA. Using the injector(2MeV) was built to research brightness of multi-pulsed high current(KA) electron beam, and researchs three measurement method (the pepper-pot method, beam collimator without magnetic field, beam collimator with magnetic field method) to detect beam's brightness with time-resolved measurement system.

  18. Plasma production for electron acceleration by resonant plasma wave

    Science.gov (United States)

    Anania, M. P.; Biagioni, A.; Chiadroni, E.; Cianchi, A.; Croia, M.; Curcio, A.; Di Giovenale, D.; Di Pirro, G. P.; Filippi, F.; Ghigo, A.; Lollo, V.; Pella, S.; Pompili, R.; Romeo, S.; Ferrario, M.

    2016-09-01

    Plasma wakefield acceleration is the most promising acceleration technique known nowadays, able to provide very high accelerating fields (10-100 GV/m), enabling acceleration of electrons to GeV energy in few centimeter. However, the quality of the electron bunches accelerated with this technique is still not comparable with that of conventional accelerators (large energy spread, low repetition rate, and large emittance); radiofrequency-based accelerators, in fact, are limited in accelerating field (10-100 MV/m) requiring therefore hundred of meters of distances to reach the GeV energies, but can provide very bright electron bunches. To combine high brightness electron bunches from conventional accelerators and high accelerating fields reachable with plasmas could be a good compromise allowing to further accelerate high brightness electron bunches coming from LINAC while preserving electron beam quality. Following the idea of plasma wave resonant excitation driven by a train of short bunches, we have started to study the requirements in terms of plasma for SPARC_LAB (Ferrario et al., 2013 [1]). In particular here we focus on hydrogen plasma discharge, and in particular on the theoretical and numerical estimates of the ionization process which are very useful to design the discharge circuit and to evaluate the current needed to be supplied to the gas in order to have full ionization. Eventually, the current supplied to the gas simulated will be compared to that measured experimentally.

  19. RadioAstron Observations of the Quasar 3C273: A Challenge to the Brightness Temperature Limit

    Science.gov (United States)

    Kovalev, Y. Y.; Kardashev, N. S.; Kellermann, K. I.; Lobanov, A. P.; Johnson, M. D.; Gurvits, L. I.; Voitsik, P. A.; Zensus, J. A.; Anderson, J. M.; Bach, U.; Jauncey, D. L.; Ghigo, F.; Ghosh, T.; Kraus, A.; Kovalev, Yu. A.; Lisakov, M. M.; Petrov, L. Yu.; Romney, J. D.; Salter, C. J.; Sokolovsky, K. V.

    2016-03-01

    Inverse Compton cooling limits the brightness temperature of the radiating plasma to a maximum of 1011.5 K. Relativistic boosting can increase its observed value, but apparent brightness temperatures much in excess of 1013 K are inaccessible using ground-based very long baseline interferometry (VLBI) at any wavelength. We present observations of the quasar 3C 273, made with the space VLBI mission RadioAstron on baselines up to 171,000 km, which directly reveal the presence of angular structure as small as 26 μas (2.7 light months) and brightness temperature in excess of 1013 K. These measurements challenge our understanding of the non-thermal continuum emission in the vicinity of supermassive black holes and require a much higher Doppler factor than what is determined from jet apparent kinematics.

  20. RadioAstron Observations of the Quasar 3C273: a Challenge to the Brightness Temperature Limit

    CERN Document Server

    Kovalev, Y Y; Kellermann, K I; Lobanov, A P; Johnson, M D; Gurvits, L I; Voitsik, P A; Zensus, J A; Anderson, J M; Bach, U; Jauncey, D L; Ghigo, F; Ghosh, T; Kraus, A; Kovalev, Yu A; Lisakov, M M; Petrov, L Yu; Romney, J D; Salter, C J; Sokolovsky, K V

    2016-01-01

    Inverse Compton cooling limits the brightness temperature of the radiating plasma to a maximum of $10^{11.5}$ K. Relativistic boosting can increase its observed value, but apparent brightness temperatures much in excess of $10^{13}$ K are inaccessible using ground-based very long baseline interferometry (VLBI) at any wavelength. We present observations of the quasar 3C273, made with the space VLBI mission RadioAstron on baselines up to 171,000 km, which directly reveal the presence of angular structure as small as 26 $\\mu$as (2.7 light months) and brightness temperature in excess of $10^{13}$ K. These measurements challenge our understanding of the non-thermal continuum emission in the vicinity of supermassive black holes and require much higher jet speeds than are observed.