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Sample records for brightness plasma sputter

  1. Novel magnetic controlled plasma sputtering method

    International Nuclear Information System (INIS)

    Axelevich, A.; Rabinovich, E.; Golan, G.

    1996-01-01

    A novel method to improve thin film vacuum sputtering is presented. This method is capable of controlling the sputtering plasma via an external set of magnets, in a similar fashion to the tetrode sputtering method. The main advantage of the Magnetic Controlled Plasma Sputtering (MCPS) is its ability to independently control all deposition parameters without any interference or cross-talk. Deposition rate, using the MCPS, is found to be almost twice the rate of triode and tetrode sputtering techniques. Experimental results using the MCPS to deposit Ni layers are described. It was demonstrated that using the MCPS method the ion beam intensity at the target is a result of the interaction of a homogeneous external magnetic field and the controlling magnetic fields. The MCPS method was therefore found to be beneficial for the production of pure stoichiometric thin solid films with high reproducibility. This method could be used for the production of compound thin films as well. (authors)

  2. Measuring brightness temperature distributions of plasma bunches

    International Nuclear Information System (INIS)

    Kirko, V.I.; Stadnichenko, I.A.

    1981-01-01

    The possibility of restoration of brightness temperature distribution along plasma jet on the base of a simple ultra high- speed photography and subsequent photometric treatment is shown. The developed technique has been applied for finding spectral radiation intensity and brightness temperature of plasma jets of a tubular gas-cumulative charge and explosive plasma compressor. The problem of shock wave front has been successfully solved and thus distribution of above parameters beginning from the region preceeding the shock wave has been obtained [ru

  3. Dust cloud evolution in sub-stellar atmospheres via plasma deposition and plasma sputtering

    Science.gov (United States)

    Stark, C. R.; Diver, D. A.

    2018-04-01

    Context. In contemporary sub-stellar model atmospheres, dust growth occurs through neutral gas-phase surface chemistry. Recently, there has been a growing body of theoretical and observational evidence suggesting that ionisation processes can also occur. As a result, atmospheres are populated by regions composed of plasma, gas and dust, and the consequent influence of plasma processes on dust evolution is enhanced. Aim. This paper aims to introduce a new model of dust growth and destruction in sub-stellar atmospheres via plasma deposition and plasma sputtering. Methods: Using example sub-stellar atmospheres from DRIFT-PHOENIX, we have compared plasma deposition and sputtering timescales to those from neutral gas-phase surface chemistry to ascertain their regimes of influence. We calculated the plasma sputtering yield and discuss the circumstances where plasma sputtering dominates over deposition. Results: Within the highest dust density cloud regions, plasma deposition and sputtering dominates over neutral gas-phase surface chemistry if the degree of ionisation is ≳10-4. Loosely bound grains with surface binding energies of the order of 0.1-1 eV are susceptible to destruction through plasma sputtering for feasible degrees of ionisation and electron temperatures; whereas, strong crystalline grains with binding energies of the order 10 eV are resistant to sputtering. Conclusions: The mathematical framework outlined sets the foundation for the inclusion of plasma deposition and plasma sputtering in global dust cloud formation models of sub-stellar atmospheres.

  4. Spatiotemporal synchronization of drift waves in a magnetron sputtering plasma

    Czech Academy of Sciences Publication Activity Database

    Martines, E.; Zuin, M.; Cavazzana, R.; Adámek, Jiří; Antoni, V.; Serianni, G.; Spolaore, M.; Vianello, N.

    2014-01-01

    Roč. 21, č. 10 (2014), s. 102309-102309 ISSN 1070-664X Institutional support: RVO:61389021 Keywords : Drift waves * Magnetron sputtering plasma * Spatiotemporal synchronization Subject RIV: BL - Plasma and Gas Discharge Physics Impact factor: 2.142, year: 2014 http://dx.doi.org/10.1063/1.4898693

  5. Plasma diagnostics during magnetron sputtering of aluminum doped zinc oxide

    DEFF Research Database (Denmark)

    Stamate, Eugen; Crovetto, Andrea; Sanna, Simone

    2016-01-01

    Plasma parameters during magnetron sputtering of aluminum-doped zinc oxide are investigated with optical emission spectroscopy, electrostatic probes and mass spectrometry with the aim of understanding the role of negative ions of oxygen during the film growth and improving the uniformity of the f......Plasma parameters during magnetron sputtering of aluminum-doped zinc oxide are investigated with optical emission spectroscopy, electrostatic probes and mass spectrometry with the aim of understanding the role of negative ions of oxygen during the film growth and improving the uniformity...

  6. Dependence of plasma characteristics on dc magnetron sputter parameters

    International Nuclear Information System (INIS)

    Wu, S.Z.

    2005-01-01

    Plasma discharge characteristics of a dc magnetron system were measured by a single Langmuir probe at the center axis of the dual-side process chamber. Plasma potential, floating potential, electron and ion densities, and electron temperature were extracted with varying dc power and gas pressure during sputter deposition of a metal target; strong correlations were shown between these plasma parameters and the sputter parameters. The electron density was controlled mostly by secondary electron generation in constant power mode, while plasma potential reflects the confinement space variation due to change of discharge voltage. When discharge pressure was varied, plasma density increases with the increased amount of free stock molecules, while electron temperature inversely decreased, due to energy-loss collision events. In low-pressure discharges, the electron energy distribution function measurements show more distinctive bi-Maxwellian distribution, with the fast electron temperature gradually decreases with increased gas pressure

  7. Plasma properties of RF magnetron sputtering system using Zn target

    Energy Technology Data Exchange (ETDEWEB)

    Nafarizal, N.; Andreas Albert, A. R.; Sharifah Amirah, A. S.; Salwa, O.; Riyaz Ahmad, M. A. [Microelectronic and Nanotechnology - Shamsuddin Research Centre (MiNT-SRC), Faculty of Electrical and Electronic Engineering, Universiti Tun Hussein Onn Malaysia 86400 Parit Raja, Batu Pahat, Johor (Malaysia)

    2012-06-29

    In the present work, we investigate the fundamental properties of magnetron sputtering plasma using Zn target and its deposited Zn thin film. The magnetron sputtering plasma was produced using radio frequency (RF) power supply and Argon (Ar) as ambient gas. A Langmuir probe was used to collect the current from the plasma and from the current intensity, we calculate the electron density and electron temperature. The properties of Zn sputtering plasma at various discharge conditions were studied. At the RF power ranging from 20 to 100 W and gas pressure 5 mTorr, we found that the electron temperature was almost unchanged between 2-2.5 eV. On the other hand, the electron temperature increased drastically from 6 Multiplication-Sign 10{sup 9} to 1 Multiplication-Sign 10{sup 10}cm{sup -3} when the discharge gas pressure increased from 5 to 10 mTorr. The electron microscope images show that the grain size of Zn thin film increase when the discharge power is increased. This may be due to the enhancement of plasma density and sputtered Zn density.

  8. Biopolymer nanostructures induced by plasma irradiation and metal sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Slepička, P., E-mail: petr.slepicka@vscht.cz [Department of Solid State Engineering, Institute of Chemical Technology, 166 28 Prague (Czech Republic); Juřík, P. [Department of Solid State Engineering, Institute of Chemical Technology, 166 28 Prague (Czech Republic); Malinský, P.; Macková, A. [Nuclear Physics Institute, Academy of Sciences of the Czech Republic, Rez, Prague 25068 (Czech Republic); Faculty of Science, J.E. Purkyně University, Ústí nad Labem (Czech Republic); Kasálková, N. Slepičková; Švorčík, V. [Department of Solid State Engineering, Institute of Chemical Technology, 166 28 Prague (Czech Republic)

    2014-08-01

    Modification based on polymer surface exposure to plasma treatment exhibits an easy and cheap technique for polymer surface nanostructuring. The influence of argon plasma treatment on biopolymer poly(L-lactide acid (PLLA) will be presented in this paper. The combination of Ar{sup +} ion irradiation, consequent sputter metallization (platinum) and thermal annealing of polymer surface will be summarized. The surface morphology was studied using atomic force microscopy. The Rutherford Backscattering Spectroscopy and X-ray Photoelectron Spectroscopy were used as analytical methods. The combination of plasma treatment with consequent thermal annealing and/or metal sputtering led to the change of surface morphology and its elemental ratio. The surface roughness and composition has been strongly influenced by the modification parameters and metal layer thickness. By plasma treatment of polymer surface combined with consequent annealing or metal deposition can be prepared materials applicable both in tissue engineering as cell carriers, but also in integrated circuit manufacturing.

  9. Arc generation from sputtering plasma-dielectric inclusion interactions

    International Nuclear Information System (INIS)

    Wickersham, C.E. Jr.; Poole, J.E.; Fan, J.S.

    2002-01-01

    Arcing during sputter deposition and etching is a significant cause of particle defect generation during device fabrication. In this article we report on the effect of aluminum oxide inclusion size, shape, and orientation on the propensity for arcing during sputtering of aluminum targets. The size, shape, and orientation of a dielectric inclusion plays a major role in determining the propensity for arcing and macroparticle emission. In previous studies we found that there is a critical inclusion size required for arcing to occur. In this article we used high-speed videos, electric arc detection, and measurements of particle defect density on wafers to study the effect of Al 2 O 3 inclusion size, shape, and orientation on arc rate, intensity, and silicon wafer particle defect density. We found that the cross-sectional area of the inclusion exposed to the sputtering plasma is the critical parameter that determines the arc rate and rate of macroparticle emission. Analysis of the arc rate, particle defect density, and the intensity of the optical emission from the arcing plasma indicates that the critical aluminum oxide inclusion area for arcing is 0.22±0.1 mm2 when the sputtering plasma sheath dark-space λ d , is 0.51 mm. Inclusions with areas greater than this critical value readily induce arcing and macroparticle ejection during sputtering. Inclusions below this critical size do not cause arcing or macroparticle ejection. When the inclusion major axis is longer than 2λ d and lies perpendicular to the sputter erosion track tangent, the arcing activity increases significantly over the case where the inclusion major axis lies parallel to the erosion track tangent

  10. A Plasma Lens for Magnetron Sputtering

    International Nuclear Information System (INIS)

    Anders, Andre; Brown, Jeff

    2010-01-01

    A plasma lens, consisting of a solenoid and potential-defining ring electrodes, has been placed between a magnetron and substrates to be coated. Photography reveals qualitative information on excitation, ionization, and the transport of plasma to the substrate.

  11. Measurements of sputtering yields for low-energy plasma ions

    International Nuclear Information System (INIS)

    Nishi, M.; Yamada, M.; Suckewer, S.; Rosengaus, E.

    1979-04-01

    Sputtering yields of various wall/limiter materials of fusion devices have been extensively measured in the relevant plasma environment for low-energy light ions (E 14 cm -3 and electron temperature up to 10eV. Target materials used were C (graphite), Ti, Mo, Ta, W, and Fe (stainless steel). In order to study the dependence of the sputtering yields on the incident energy of ions, the target samples were held at negative bias voltage up to 300V. The sputtering yields were determined by a weight-loss method and by spectral line intensity measurements. The data obtained in the present experiment agree well with those previously obtained at the higher energies (E greater than or equal to 200eV) by other authors using different schemes; the present data also extend to substantially lower energies (E approx. > 30eV) than hitherto

  12. Bright branes for strongly coupled plasmas

    International Nuclear Information System (INIS)

    Mateos, David; Patino, Leonardo

    2007-01-01

    We use holographic techniques to study photon production in a class of finite temperature, strongly coupled, large-N c SU(N c ) quark-gluon plasmas with N f c quark flavours. Our results are valid to leading order in the electromagnetic coupling constant but non-perturbatively in the SU(N c ) interactions. The spectral function of electromagnetic currents and other related observables exhibit an interesting structure as a function of the photon frequency and the quark mass. We discuss possible implications for heavy ion collision experiments

  13. Spatiotemporal synchronization of drift waves in a magnetron sputtering plasma

    Energy Technology Data Exchange (ETDEWEB)

    Martines, E.; Zuin, M.; Cavazzana, R.; Antoni, V.; Serianni, G.; Spolaore, M.; Vianello, N. [Consorzio RFX, Padova (Italy); Adámek, J. [Institute of Plasma Physics AS CR, Prague (Czech Republic)

    2014-10-15

    A feedforward scheme is applied for drift waves control in a magnetized magnetron sputtering plasma. A system of driven electrodes collecting electron current in a limited region of the explored plasma is used to interact with unstable drift waves. Drift waves actually appear as electrostatic modes characterized by discrete wavelengths of the order of few centimeters and frequencies of about 100 kHz. The effect of external quasi-periodic, both in time and space, travelling perturbations is studied. Particular emphasis is given to the role played by the phase relation between the natural and the imposed fluctuations. It is observed that it is possible by means of localized electrodes, collecting currents which are negligible with respect to those flowing in the plasma, to transfer energy to one single mode and to reduce that associated to the others. Due to the weakness of the external action, only partial control has been achieved.

  14. Spatiotemporal synchronization of drift waves in a magnetron sputtering plasma

    International Nuclear Information System (INIS)

    Martines, E.; Zuin, M.; Cavazzana, R.; Antoni, V.; Serianni, G.; Spolaore, M.; Vianello, N.; Adámek, J.

    2014-01-01

    A feedforward scheme is applied for drift waves control in a magnetized magnetron sputtering plasma. A system of driven electrodes collecting electron current in a limited region of the explored plasma is used to interact with unstable drift waves. Drift waves actually appear as electrostatic modes characterized by discrete wavelengths of the order of few centimeters and frequencies of about 100 kHz. The effect of external quasi-periodic, both in time and space, travelling perturbations is studied. Particular emphasis is given to the role played by the phase relation between the natural and the imposed fluctuations. It is observed that it is possible by means of localized electrodes, collecting currents which are negligible with respect to those flowing in the plasma, to transfer energy to one single mode and to reduce that associated to the others. Due to the weakness of the external action, only partial control has been achieved

  15. Arc generation from sputtering plasma-dielectric inclusion interactions

    CERN Document Server

    Wickersham, C E J; Fan, J S

    2002-01-01

    Arcing during sputter deposition and etching is a significant cause of particle defect generation during device fabrication. In this article we report on the effect of aluminum oxide inclusion size, shape, and orientation on the propensity for arcing during sputtering of aluminum targets. The size, shape, and orientation of a dielectric inclusion plays a major role in determining the propensity for arcing and macroparticle emission. In previous studies we found that there is a critical inclusion size required for arcing to occur. In this article we used high-speed videos, electric arc detection, and measurements of particle defect density on wafers to study the effect of Al sub 2 O sub 3 inclusion size, shape, and orientation on arc rate, intensity, and silicon wafer particle defect density. We found that the cross-sectional area of the inclusion exposed to the sputtering plasma is the critical parameter that determines the arc rate and rate of macroparticle emission. Analysis of the arc rate, particle defect...

  16. Carbon dust formation in a cold plasma from cathode sputtering

    International Nuclear Information System (INIS)

    Arnas, C.; Mouberi, A.; Hassouni, K.; Michau, A.; Lombardi, G.; Bonnin, X.; Benedic, F.; Pegourie, B.

    2009-01-01

    Nanoparticles are produced in argon glow plasmas where carbon is introduced by sputtering of a graphite cathode. A scaling law of growth is reported on as a function of the discharge time. Two successive stages of growth of concomitant agglomeration and carbon deposition are observed, followed by a final stage of growth by carbon deposition. A model of formation of molecular precursors by coagulation of neutral clusters on the one hand and of neutral-negative clusters on the other hand is presented, based on formation enthalpy and cluster geometry.

  17. Carbon dust formation in a cold plasma from cathode sputtering

    Science.gov (United States)

    Arnas, C.; Mouberi, A.; Hassouni, K.; Michau, A.; Lombardi, G.; Bonnin, X.; Bénédic, F.; Pégourié, B.

    2009-06-01

    Nanoparticles are produced in argon glow plasmas where carbon is introduced by sputtering of a graphite cathode. A scaling law of growth is reported on as a function of the discharge time. Two successive stages of growth of concomitant agglomeration and carbon deposition are observed, followed by a final stage of growth by carbon deposition. A model of formation of molecular precursors by coagulation of neutral clusters on the one hand and of neutral-negative clusters on the other hand is presented, based on formation enthalpy and cluster geometry.

  18. Plasma properties during magnetron sputtering of lithium phosphorous oxynitride thin films

    DEFF Research Database (Denmark)

    Christiansen, Ane Sælland; Stamate, Eugen; Thydén, Karl Tor Sune

    2015-01-01

    The nitrogen dissociation and plasma parameters during radio frequency sputtering of lithium phosphorus oxynitride thin films in nitrogen gas are investigated by mass appearance spectrometry, electrostatic probes and optical emission spectroscopy, and the results are correlated with electrochemical...... properties and microstructure of the films. Low pressure and moderate power are associated with lower plasma density, higher electron temperature, higher plasma potential and larger diffusion length for sputtered particles. This combination of parameters favors the presence of more atomic nitrogen, a fact...

  19. Nanoscale morphogenesis of nylon-sputtered plasma polymer particles

    Science.gov (United States)

    Choukourov, Andrei; Shelemin, Artem; Pleskunov, Pavel; Nikitin, Daniil; Khalakhan, Ivan; Hanuš, Jan

    2018-05-01

    Sub-micron polymer particles are highly important in various fields including astrophysics, thermonuclear fusion and nanomedicine. Plasma polymerization offers the possibility to produce particles with tailor-made size, crosslink density and chemical composition to meet the requirements of a particular application. However, the mechanism of nucleation and growth of plasma polymer particles as well as diversity of their morphology remain far from being clear. Here, we prepared nitrogen-containing plasma polymer particles by rf magnetron sputtering of nylon in a gas aggregation cluster source with variable length. The method allowed the production of particles with roughly constant chemical composition and number density but with the mean size changing from 80 to 320 nm. Atomic Force Microscopy with super-sharp probes was applied to study the evolution of the particle surface topography as they grow in size. Height–height correlation and power spectral density functions were obtained to quantify the roughness exponent α  =  0.78, the growth exponent β  =  0.35, and the dynamic exponent 1/z  =  0.50. The set of critical exponents indicates that the particle surface evolves in a self-affine mode and the overall particle growth is caused by the accretion of polymer-forming species from the gas phase and not by coagulation. Redistribution of the incoming material over the surface coupled with the inhomogeneous distribution of inner stress is suggested as the main factor that determines the morphogenesis of the plasma polymer particles.

  20. Recent progress in thin film processing by magnetron sputtering with plasma diagnostics

    International Nuclear Information System (INIS)

    Han, Jeon G

    2009-01-01

    The precise control of the structure and related properties becomes crucial for sophisticated applications of thin films deposited by magnetron sputtering in emerging industries including the flat panel display, digital electronics and nano- and bio-industries. The film structure is closely related to the total energy delivered to the substrate surface for nucleation and growth during all kinds of thin film processes, including magnetron sputtering. Therefore, the energy delivered to the surface for nucleation and growth during magnetron sputtering should be measured and analysed by integrated diagnostics of the plasma parameters which are closely associated with the process parameters and other external process conditions. This paper reviews the background of thin film nucleation and growth, the status of magnetron sputtering technology and the progress of plasma diagnostics for plasma processing. The evolution of the microstructure during magnetron sputtering is then discussed with respect to the change in the process variables in terms of the plasma parameters along with empirical data of the integrated plasma diagnostics for various magnetron sputtering conditions with conventional dc, pulsed dc and high power pulsed dc sputtering modes. Among the major energy terms to be discussed are the temperature change in the top surface region and the energies of ions and neutral species. (topical review)

  1. Targets on the basis of ferrites and high-temperature superconductors for ion-plasma sputtering

    International Nuclear Information System (INIS)

    Lepeshev, A.A.; Saunin, V.N.; Telegin, S.V.; Polyakova, K.P.; Seredkin, V.A.; Pol'skij, A.I.

    2000-01-01

    Paper describes a method to produce targets for ion-plasma sputtering using plasma splaying of the appropriate powders on a cooled metal basis. Application of the plasma process was demonstrated to enable to produce complex shaped targets under the controlled atmosphere on the basis of ceramic materials ensuring their high composition homogeneity, as well as, reliable mechanical and thermal contact of the resultant coating with the base. One carried out experiments in ion-plasma sputtering of targets to prepare ferrite polycrystalline films to be used in magnetooptics and to prepare high-temperature superconductor epitaxial films [ru

  2. Sputter deposition of tantalum-nitride films on copper using an rf-plasma

    International Nuclear Information System (INIS)

    Walter, K.C.; Fetherston, R.P.; Sridharan, K.; Chen, A.; Shamim, M.M.; Conrad, J.R.

    1994-01-01

    A tantalum-nitride film was successfully deposited at ambient temperature on copper with a modified ion-assisted-deposition (IAD) technique. The process uses an argon and nitrogen plasma to sputter deposit from a tantalum rf-cathode and ion implant the deposited film simultaneously. Both argon and nitrogen ions are used for sputtering and ion implantation. Auger spectroscopy and x-ray diffraction were used to characterize the resulting film

  3. Investigations into the Anti-Felting Properties of Sputtered Wool Using Plasma Treatment

    International Nuclear Information System (INIS)

    Borghei, S. M.; Shahidi, S.; Ghoranneviss, M.; Abdolahi, Z.

    2013-01-01

    In this research the effects of mordant and plasma sputtering treatments on the crystallinity and morphological properties of wool fabrics were investigated. The felting behavior of the treated samples was also studied. We used madder as a natural dye and copper sulfate as a metal mordant. We also used copper as the electrode material in a DC magnetron plasma sputtering device. The anti-felting properties of the wool samples before and after dying was studied, and it was shown that the shrink resistance and anti-felting behavior of the wool had been significantly improved by the plasma sputtering treatment. In addition, the percentage of crystallinity and the size of the crystals were investigated using an X-ray diffractometer, and a scanning electron microscope was used for morphological analysis. The amount of copper particles on the surface of the mordanted and sputtered fabrics was studied using the energy dispersive X-ray (EDX) method, and the hydrophobic properties of the samples were examined using the water drop test. The results show that with plasma sputtering treatment, the hydrophobic properties of the surface of wool become super hydrophobic.

  4. Comparisons of physical and chemical sputtering in high density divertor plasmas with the Monte Carlo Impurity (MCI) transport model

    International Nuclear Information System (INIS)

    Evans, T.E.; Loh, Y.S.; West, W.P.; Finkenthal, D.F.

    1997-11-01

    The MCI transport model was used to compare chemical and physical sputtering for a DIII-D divertor plasma near detachment. With physical sputtering alone the integrated carbon influx was 8.4 x 10 19 neutral/s while physical plus chemical sputtering produced an integrated carbon influx of 1.7 x 10 21 neutrals/s. The average carbon concentration in the computational volume increased from 0.012% with only physical sputtering to 0.182% with both chemical and physical sputtering. This increase in the carbon inventory produced more radiated power which is in better agreement with experimental measurements

  5. Preparation of Pb(Zr, Ti)O3 Thin Films by Plasma-Assisted Sputtering

    Science.gov (United States)

    Hioki, Tsuyoshi; Akiyama, Masahiko; Ueda, Tomomasa; Onozuka, Yutaka; Suzuki, Kouji

    1999-09-01

    A novel plasma-assisted RF magnetron sputtering system with an immersed coil antenna between a target and a substrate was applied for preparing Pb(Zr, Ti)O3 (PZT) thin films. The antenna enabled the generation of inductively coupled plasma (ICP) independently of the target RF source. The plasma assisted by the antenna resulted in the changes of ion fluxes and these energy distributions irradiating to the substrate. The crystalline phase of the deposited PZT thin films was occupied by the perovskite phase depending on the antenna power. In addition, a high deposition rate, modified uniformity of film thickness, and a dense film structure with large columnar grains were obtained as a result of effects of the assisted plasma. The application of the plasma-assisted sputtering method may enable the preparation of PZT thin films that haveexcellent properties.

  6. Experimental study of the discharge in the low pressure plasma jet sputtering system

    Czech Academy of Sciences Publication Activity Database

    Klusoň, J.; Kudrna, P.; Kolpaková, A.; Picková, I.; Hubička, Zdeněk; Tichý, M.

    2013-01-01

    Roč. 53, č. 1 (2013), s. 10-15 ISSN 0863-1042 Institutional support: RVO:68378271 Keywords : hollow cathode * plasma jet sputtering system * Langmuir probe Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.983, year: 2013

  7. A condition for scrape-off plasmas in self-sputtering

    International Nuclear Information System (INIS)

    Sengoku, Seio; Azumi, Masahumi; Matsumoto, Yasuo; Maeda, Hikosuke; Shimomura, Yasuo

    1978-10-01

    Behavior of self-sputtered impurities from limiters or divertor neutralizer plates was investigated. The upper limit of boundary plasma temperature determined under the condition that the impurities of wall materials was not on increase is shown to be low. (author)

  8. Hydrophobization of track membrane surface by ion-plasma sputtering method

    Science.gov (United States)

    Kuklin, I. E.; Khlebnikov, N. A.; Barashev, N. R.; Serkov, K. V.; Polyakov, E. V.; Zdorovets, M. V.; Borgekov, D. B.; Zhidkov, I. S.; Cholakh, S. O.; Kozlovskiy, A. L.

    2017-09-01

    This article reviews the possibility of applying inorganic coatings of metal compounds on PTM by ion-plasma sputtering. The main aim of this research is to increase the contact angle of PTM surfaces and to impart the properties of a hydrophobic material to it. After the modification, the initial contact angle increased from 70° to 120°.

  9. Nano-structuring of PTFE surface by plasma treatment, etching, and sputtering with gold

    International Nuclear Information System (INIS)

    Reznickova, Alena; Kolska, Zdenka; Hnatowicz, Vladimir; Svorcik, Vaclav

    2011-01-01

    Properties of pristine, plasma modified, and etched (by water and methanol) polytetrafluoroethylene (PTFE) were studied. Gold nanolayers sputtered on this modified PTFE have been also investigated. Contact angle, measured by goniometry, was studied as a function of plasma exposure and post-exposure aging times. Degradation of polymer chains was examined by etching of plasma modified PTFE in water or methanol. The amount of ablated and etched layer was measured by gravimetry. In the next step the pristine, plasma modified, and etched PTFE was sputtered with gold. Changes in surface morphology were observed using atomic force microscopy. Chemical structure of modified polymers was characterized by X-ray photoelectron spectroscopy (XPS). Surface chemistry of the samples was investigated by electrokinetic analysis. Sheet resistance of the gold layers was measured by two-point technique. The contact angle of the plasma modified PTFE decreases with increasing exposure time. The PTFE amount, ablated by the plasma treatment, increases with the plasma exposure time. XPS measurements proved that during the plasma treatment the PTFE macromolecular chains are degraded and oxidized and new –C–O–C–, –C=O, and –O–C=O groups are created in modified surface layer. Surface of the plasma modified PTFE is weakly soluble in methanol and intensively soluble in water. Zeta potential and XPS shown dramatic changes in PTFE surface chemistry after the plasma exposure, water etching, and gold deposition. When continuous gold layer is formed a rapid decrease of the sheet resistance of the gold layer is observed.

  10. Simulation calculations of physical sputtering and reflection coefficient of plasma-irradiated carbon surface

    International Nuclear Information System (INIS)

    Kawamura, T.; Ono, T.; Yamamura, Y.

    1994-08-01

    Physical sputtering yields from the carbon surface irradiated by the boundary plasma are obtained with the use of a Monte Carlo simulation code ACAT. The yields are calculated for many random initial energy and angle values of incident protons or deuterons with a Maxwellian velocity distribution, and then averaged. Here the temperature of the boundary plasma, the sheath potential and the angle δ between the magnetic field line and the surface normal are taken into account. A new fitting formula for an arrangement of the numerical data of sputtering yield is introduced, in which six fitting parameters are determined from the numerical results and listed. These results provide a way to estimate the erosion of carbon materials irradiated by boundary plasma. The particle reflection coefficients for deuterons and their neutrals from a carbon surface are also calculated by the same code and presented together with, for comparison, that for the case of monoenergetic normal incidence. (author)

  11. Plasma ``anti-assistance'' and ``self-assistance'' to high power impulse magnetron sputtering

    Science.gov (United States)

    Anders, André; Yushkov, Georgy Yu.

    2009-04-01

    A plasma assistance system was investigated with the goal to operate high power impulse magnetron sputtering (HiPIMS) at lower pressure than usual, thereby to enhance the utilization of the ballistic atoms and ions with high kinetic energy in the film growth process. Gas plasma flow from a constricted plasma source was aimed at the magnetron target. Contrary to initial expectations, such plasma assistance turned out to be contraproductive because it led to the extinction of the magnetron discharge. The effect can be explained by gas rarefaction. A better method of reducing the necessary gas pressure is operation at relatively high pulse repetition rates where the afterglow plasma of one pulse assists in the development of the next pulse. Here we show that this method, known from medium-frequency (MF) pulsed sputtering, is also very important at the much lower pulse repetition rates of HiPIMS. A minimum in the possible operational pressure is found in the frequency region between HiPIMS and MF pulsed sputtering.

  12. Plasma 'anti-assistance' and 'self-assistance' to high power impulse magnetron sputtering

    International Nuclear Information System (INIS)

    Anders, Andre; Yushkov, Georgy Yu.

    2009-01-01

    A plasma assistance system was investigated with the goal to operate high power impulse magnetron sputtering (HiPIMS) at lower pressure than usual, thereby to enhance the utilization of the ballistic atoms and ions with high kinetic energy in the film growth process. Gas plasma flow from a constricted plasma source was aimed at the magnetron target. Contrary to initial expectations, such plasma assistance turned out to be contraproductive because it led to the extinction of the magnetron discharge. The effect can be explained by gas rarefaction. A better method of reducing the necessary gas pressure is operation at relatively high pulse repetition rates where the afterglow plasma of one pulse assists in the development of the next pulse. Here we show that this method, known from medium-frequency (MF) pulsed sputtering, is also very important at the much lower pulse repetition rates of HiPIMS. A minimum in the possible operational pressure is found in the frequency region between HiPIMS and MF pulsed sputtering

  13. One-dimensional analysis of the rate of plasma-assisted sputter deposition

    International Nuclear Information System (INIS)

    Palmero, A.; Rudolph, H.; Habraken, F. H. P. M.

    2007-01-01

    In this article a recently developed model [A. Palmero, H. Rudolph, and F. H. P. M. Habraken, Appl. Phys. Lett. 89, 211501 (2006)] is applied to analyze the transport of sputtered material from the cathode toward the growing film when using a plasma-assisted sputtering deposition technique. The argon pressure dependence of the deposition rate of aluminum, silicon, vanadium, chromium, germanium, tantalum, and tungsten under several different experimental conditions has been analyzed by fitting experimental results from the literature to the above-mentioned theory. Good fits are obtained. Three quantities are deduced from the fit: the temperature of the cathode and of the growing film, and the value of the effective cross section for thermalization due to elastic scattering of a sputtered particle on background gas atoms. The values derived from the fits for the growing film and cathode temperature are very similar to those experimentally determined and reported in the literature. The effective cross sections have been found to be approximately the corresponding geometrical cross section divided by the average number of collisions required for the thermalization, implying that the real and effective thermalization lengths have a similar value. Finally, the values of the throw distance appearing in the Keller-Simmons model, as well as its dependence on the deposition conditions have been understood invoking the values of the cathode and film temperature, as well as of the value of the effective cross section. The analysis shows the overall validity of this model for the transport of sputtered particles in sputter deposition

  14. Study of Au- production in a plasma-sputter type negative ion source

    International Nuclear Information System (INIS)

    Okabe, Yushirou.

    1991-10-01

    A negative ion source of plasma-sputter type has been constructed for the purpose of studying physical processes which take place in the ion source. Negative ions of gold are produced on the gold target which is immersed in an argon discharge plasma and biased negatively with respect to the plasma. The work function of the target surface was lowered by the deposition of Cs on the target. An in-situ method has been developed to determine the work function of the target surface in the ion source under discharge conditions. The observed minimum work function of a cesiated gold surface in an argon plasma was 1.3 eV, when the negative ion production rate took the maximum value. The production rate increased monotonically and saturated when the surface work function was reduced from 1.9 eV to 1.3 eV. The dependence of Au - production rate on the incident ion energy and on the number of the incident ion was studied. From the experimental results, it is shown that the sputtering process is an important physical process for the negative ion production in the plasma-sputter type negative ion source. The energy distribution function was also measured. When the bias voltage was smaller than 280 V, the high energy component in the distribution decreased as the target voltage was decreased. Therefore, the energy spread ΔE, of the observed negative ion energy distribution also decreased. This tendency is also seen in the energy spectrum of Cu atoms sputtered in normal direction by Ar + ions. (J.P.N.)

  15. Brightness enhancement of plasma ion source by utilizing anode spot for nano applications

    International Nuclear Information System (INIS)

    Park, Yeong-Shin; Lee, Yuna; Chung, Kyoung-Jae; Hwang, Y. S.; Kim, Yoon-Jae; Park, Man-Jin; Moon, Dae Won

    2012-01-01

    Anode spots are known as additional discharges on positively biased electrode immersed in plasmas. The anode spot plasma ion source (ASPIS) has been investigated as a high brightness ion source for nano applications such as focused ion beam (FIB) and nano medium energy ion scattering (nano-MEIS). The generation of anode spot is found to enhance brightness of ion beam since the anode spot increases plasma density near the extraction aperture. Brightness of the ASPIS has been estimated from measurement of emittance for total ion beam extracted through sub-mm aperture. The ASPIS is installed to the FIB system. Currents and diameters of the focused beams with/without anode spot are measured and compared. As the anode spot is turned on, the enhancement of beam current is observed at fixed diameter of the focused ion beam. Consequently, the brightness of the focused ion beam is enhanced as well. For argon ion beam, the maximum normalized brightness of 12 300 A/m 2 SrV is acquired. The ASPIS is applied to nano-MEIS as well. The ASPIS is found to increase the beam current density and the power efficiency of the ion source for nano-MEIS. From the present study, it is shown that the ASPIS can enhance the performance of devices for nano applications.

  16. Brightness enhancement of plasma ion source by utilizing anode spot for nano applications

    Energy Technology Data Exchange (ETDEWEB)

    Park, Yeong-Shin; Lee, Yuna; Chung, Kyoung-Jae; Hwang, Y. S. [Department of Nuclear Engineering, Seoul National University, Seoul 151-742 (Korea, Republic of); Kim, Yoon-Jae [Samsung Electronics Co. Ltd., Gyeonggi 445-701 (Korea, Republic of); Park, Man-Jin [Research Institute of Nano Manufacturing System, Seoul National University of Science and Technology, Seoul 139-743 (Korea, Republic of); Moon, Dae Won [Nanobio Fusion Research Center, Korea Research Institute of Standards and Science, Daejeon 305-600 (Korea, Republic of)

    2012-02-15

    Anode spots are known as additional discharges on positively biased electrode immersed in plasmas. The anode spot plasma ion source (ASPIS) has been investigated as a high brightness ion source for nano applications such as focused ion beam (FIB) and nano medium energy ion scattering (nano-MEIS). The generation of anode spot is found to enhance brightness of ion beam since the anode spot increases plasma density near the extraction aperture. Brightness of the ASPIS has been estimated from measurement of emittance for total ion beam extracted through sub-mm aperture. The ASPIS is installed to the FIB system. Currents and diameters of the focused beams with/without anode spot are measured and compared. As the anode spot is turned on, the enhancement of beam current is observed at fixed diameter of the focused ion beam. Consequently, the brightness of the focused ion beam is enhanced as well. For argon ion beam, the maximum normalized brightness of 12 300 A/m{sup 2} SrV is acquired. The ASPIS is applied to nano-MEIS as well. The ASPIS is found to increase the beam current density and the power efficiency of the ion source for nano-MEIS. From the present study, it is shown that the ASPIS can enhance the performance of devices for nano applications.

  17. Remote plasma sputtering of indium tin oxide thin films for large area flexible electronics

    International Nuclear Information System (INIS)

    Yeadon, A.D.; Wakeham, S.J.; Brown, H.L.; Thwaites, M.J.; Whiting, M.J.; Baker, M.A.

    2011-01-01

    Indium tin oxide (ITO) thin films with a specific resistivity of 3.5 × 10 −4 Ω cm and average visible light transmission (VLT) of 90% have been reactively sputtered onto A4 Polyethylene terephthalate (PET), glass and silicon substrates using a remote plasma sputtering system. This system offers independent control of the plasma density and the target power enabling the effect of the plasma on ITO properties to be studied. Characterization of ITO on glass and silicon has shown that increasing the plasma density gives rise to a decrease in the specific resistivity and an increase in the optical band gap of the ITO films. Samples deposited at plasma powers of 1.5 kW, 2.0 kW and 2.5 kW and optimized oxygen flow rates exhibited specific resistivity values of 3.8 × 10 −4 Ω cm, 3.7 × 10 −4 Ω cm and 3.5 × 10 −4 Ω cm and optical gaps of 3.48 eV, 3.51 eV and 3.78 eV respectively. The increase in plasma density also influenced the crystalline texture and the VLT increased from 70 to 95%, indicating that more oxygen is being incorporated into the growing film. It has been shown that the remote plasma sputter technique can be used in an in-line process to produce uniform ITO coatings on PET with specific resistivities of between 3.5 × 10 −4 and 4.5 × 10 −4 Ω cm and optical transmission of greater than 85% over substrate widths of up to 30 cm.

  18. WO.sub.3./sub. thin films prepared by sedimentation and plasma sputtering

    Czech Academy of Sciences Publication Activity Database

    Olejníček, Jiří; Brunclíková, Michaela; Kment, Š.; Hubička, Zdeněk; Kmentová, N.; Kšírová, Petra; Čada, Martin; Zlámal, M.; Krýsa, J.

    2017-01-01

    Roč. 318, Jun (2017), s. 281-288 ISSN 1385-8947 R&D Projects: GA TA ČR(CZ) TF01000084; GA ČR(CZ) GA15-00863S; GA TA ČR TA03010743; GA ČR GAP108/12/2104 Institutional support: RVO:68378271 Keywords : WO 3 * thin films * water splitting * pulsed magnetron sputtering * sedimentation * photo-electro-chemistry Subject RIV: BL - Plasma and Gas Discharge Physics OBOR OECD: Fluids and plasma physics (including surface physics) Impact factor: 6.216, year: 2016

  19. ERO modeling of Cr sputtering in the linear plasma device PSI-2

    Science.gov (United States)

    Eksaeva, A.; Borodin, D.; Kreter, A.; Nishijima, D.; Pospieszczyk, A.; Schlummer, T.; Ertmer, S.; Terra, A.; Unterberg, B.; Kirschner, A.; Romazanov, J.; Brezinsek, S.; Rasinski, M.; Henderson, S.; O'Mullane, M.; Summers, H.; Bluteau, M.; Marenkov, E.

    2017-12-01

    The prediction of the first wall deterioration and possible plasma contamination by impurities is a high priority task for ITER. 3D Monte-Carlo code ERO is a tool for modeling of eroded impurity transport and spectroscopy in plasma devices useful for experiment interpretation. Chromium (Cr) is a fusion-relevant reactor wall element (e.g. component of RAFM steels expected for use in DEMO). Linear plasma devices including PSI-2 are effective tools for investigations of plasma-surface interaction effects, allowing continuous plasma operation and good control over irradiation parameters. Experiments on Cr sputtering were conducted at PSI-2. In these experiments the Cr erosion was measured by three techniques: mass loss of the sample, quartz micro-balance of deposited impurities at a distance from it and optical emission spectroscopy. Experiments were modeled with the 3D Monte-Carlo code ERO, previously validated by application to similar experiments with tungsten (W). The simulations are demonstrated to reproduce the main experimental outcomes proving the quality of the sputtering data used. A significant focuses of the paper is the usage and validation of atomic data (resent metastable-resolved dataset from ADAS) for interpretation of Cr spectroscopy. Initial population of quasi-metastable state was fitted by matching the modeling with the experimental line intensity profiles.

  20. Effect of Wall Material on H– Production in a Plasma Sputter-Type Ion Source

    Directory of Open Access Journals (Sweden)

    Y. D. M. Ponce

    2004-12-01

    Full Text Available The effect of wall material on negative hydrogen ion (H– production was investigated in a multicusp plasma sputter-type ion source (PSTIS. Steady-state cesium-seeded hydrogen plasma was generated by a tungsten filament, while H– was produced through surface production using a molybdenum sputter target. Plasma parameters and H– yields were determined from Langmuir probe and Faraday cup measurements, respectively. At an input hydrogen pressure of 1.2 mTorr and optimum plasma discharge parameters Vd = –90 V and Id = –2.25 A, the plasma parameters ne was highest and T–e was lowest as determined from Langmuir probe measurements. At these conditions, aluminum generates the highest ion current density of 0.01697 mA/cm2, which is 64% more than the 0.01085 mA/cm2 that stainless steel produces. The yield of copper, meanwhile, falls between the two materials at 0.01164 mA/cm2. The beam is maximum at Vt = –125 V. Focusing is achieved at VL = –70 V for stainless steel, Vt = –60 V for aluminum, and Vt = –50 V for copper. The results demonstrate that proper selection of wall material can greatly enhance the H– production of the PSTIS.

  1. Biopolymer nanostructures induced by plasma irradiation and metal sputtering

    Czech Academy of Sciences Publication Activity Database

    Slepička, P.; Juřík, P.; Malinský, Petr; Macková, Anna; Kasálková-Slepičková, N.; Švorčík, V.

    2014-01-01

    Roč. 332, 7-10 (2014), s. 7-10 ISSN 0168-583X. [21st International Conference on Ion Beam Analysis (IBA). Seattle, 23.06.2013-28.06.2013] R&D Projects: GA ČR ga13-06609S; GA ČR(CZ) GAP108/10/1106 Institutional support: RVO:61389005 Keywords : Biopolymer * plasma * surface morphology * RBS * Ripple pattern Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 1.124, year: 2014

  2. Composite materials obtained by the ion-plasma sputtering of metal compound coatings on polymer films

    Science.gov (United States)

    Khlebnikov, Nikolai; Polyakov, Evgenii; Borisov, Sergei; Barashev, Nikolai; Biramov, Emir; Maltceva, Anastasia; Vereshchagin, Artem; Khartov, Stas; Voronin, Anton

    2016-01-01

    In this article, the principle and examples composite materials obtained by deposition of metal compound coatings on polymer film substrates by the ion-plasma sputtering method are presented. A synergistic effect is to obtain the materials with structural properties of the polymer substrate and the surface properties of the metal deposited coatings. The technology of sputtering of TiN coatings of various thicknesses on polyethylene terephthalate films is discussed. The obtained composites are characterized by X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy dispersive X-ray spectroscopy (EDX), atomic force microscopy (AFM), and scanning tunneling microscopy (STM) is shown. The examples of application of this method, such as receiving nanocomposite track membranes and flexible transparent electrodes, are considered.

  3. Hydrogen and helium trapping in tungsten deposition layers formed by RF plasma sputtering

    International Nuclear Information System (INIS)

    Kazunari Katayama; Kazumi Imaoka; Takayuki Okamura; Masabumi Nishikawa

    2006-01-01

    Understanding of tritium behavior in plasma facing materials is an important issue for fusion reactor from viewpoints of fuel control and radiation safety. Tungsten is used as a plasma facing material in the divertor region of ITER. However, investigation of hydrogen isotope behavior in tungsten deposition layer is not sufficient so far. It is also necessary to evaluate an effect of helium on a formation of deposition layer and an accumulation of hydrogen isotopes because helium generated by fusion reaction exists in fusion plasma. In this study, tungsten deposition layers were formed by sputtering method using hydrogen and helium RF plasma. An erosion rate and a deposition rate of tungsten were estimated by weight measurement. Hydrogen and helium retention were investigated by thermal desorption method. Tungsten deposition was performed using a capacitively-coupled RF plasma device equipped with parallel-plate electrodes. A tungsten target was mounted on one electrode which is supplied with RF power at 200 W. Tungsten substrates were mounted on the other electrode which is at ground potential. The plasma discharge was continued for 120 hours where pressure of hydrogen or helium was controlled to be 10 Pa. The amounts of hydrogen and helium released from deposition layers was quantified by a gas chromatograph. The erosion rate of target tungsten under helium plasma was estimated to be 1.8 times larger than that under hydrogen plasma. The deposition rate on tungsten substrate under helium plasma was estimated to be 4.1 times larger than that under hydrogen plasma. Atomic ratio of hydrogen to tungsten in a deposition layer formed by hydrogen plasma was estimated to be 0.17 by heating to 600 o C. From a deposition layer formed by helium plasma, not only helium but also hydrogen was released by heating to 500 o C. Atomic ratios of helium and hydrogen to tungsten were estimated to be 0.080 and 0.075, respectively. The trapped hydrogen is probably impurity hydrogen

  4. Study on re-sputtering during CN{sub x} film deposition through spectroscopic diagnostics of plasma

    Energy Technology Data Exchange (ETDEWEB)

    Liang, Peipei; Yang, Xu; Li, Hui; Cai, Hua [Department of Optical Science and Engineering, Fudan University, Shanghai 200433 (China); Sun, Jian; Xu, Ning [Department of Optical Science and Engineering, Fudan University, Shanghai 200433 (China); Shanghai Engineering Research Center of Ultra-Precision Optical Manufacturing, Fudan University, Shanghai 200433 (China); Wu, Jiada, E-mail: jdwu@fudan.edu.cn [Department of Optical Science and Engineering, Fudan University, Shanghai 200433 (China); Shanghai Engineering Research Center of Ultra-Precision Optical Manufacturing, Fudan University, Shanghai 200433 (China); Engineering Research Center of Advanced Lighting Technology, Ministry of Education, Fudan University, Shanghai 200433 (China)

    2015-10-15

    A nitrogen-carbon plasma was generated during the deposition of carbon nitride (CN{sub x}) thin films by pulsed laser ablation of a graphite target in a discharge nitrogen plasma, and the optical emission of the generated nitrogen-carbon plasma was measured for the diagnostics of the plasma and the characterization of the process of CN{sub x} film deposition. The nitrogen-carbon plasma was recognized to contain various species including nitrogen molecules and molecular ions excited in the ambient N{sub 2} gas, carbon atoms and atomic ions ablated from the graphite target and CN radicals. The temporal evolution and spatial distribution of the CN emission and their dependence on the substrate bias voltage show two groups of CN radicals flying in opposite directions. One represents the CN radicals formed as the products of the reactions occurring in the nitrogen-carbon plasma, revealing the reactive deposition of CN{sub x} film due to the reactive expansion of the ablation carbon plasma in the discharge nitrogen plasma and the effective formation of gaseous CN radicals as precursors for CN{sub x} film growth. The other one represents the CN radicals re-sputtered from the growing CN{sub x} film by energetic plasma species, evidencing the re-sputtering of the growing film accompanying film growth. And, the re-sputtering presents ion-induced sputtering features.

  5. Deposition of nanostructured fluorocarbon plasma polymer films by RF magnetron sputtering of polytetrafluoroethylene

    Energy Technology Data Exchange (ETDEWEB)

    Kylian, Ondrej, E-mail: ondrej.kylian@gmail.com; Drabik, Martin; Polonskyi, Oleksandr; Cechvala, Juraj; Artemenko, Anna; Gordeev, Ivan; Choukourov, Andrei; Matolinova, Iva; Slavinska, Danka; Biederman, Hynek, E-mail: bieder@kmf.troja.mff.cuni.cz

    2011-07-29

    The RF magnetron sputtering of polytetrafluoroethylene target is studied with the aim to find out conditions leading to the deposition of super-hydrophobic thin films. It is shown that such coatings can be prepared at elevated pressures and a longer distance between the sputtered target and the substrate. This is explained by an increase in the density of longer C{sub x}F{sub y} molecules that reach the substrate and a lower flux of ions and CF{sub 2} radicals on the surface of growing film under such deposition conditions, as observed by optical emission spectroscopy and mass spectrometry. Such changes in plasma composition result in a deposition of rough films having F/C ratio close to 2 as observed by scanning electron microscopy and X-ray photoelectron spectroscopy, respectively. These findings clearly distinguish our results from the previous investigations of polytetrafluoroethylene sputtering performed at shorter distances from the target, where either low F/C ratio or low roughness of the deposited films did not allow reaching super-hydrophobic character of the coatings.

  6. Control of composition and crystallinity in hydroxyapatite films deposited by electron cyclotron resonance plasma sputtering

    Science.gov (United States)

    Akazawa, Housei; Ueno, Yuko

    2014-01-01

    Hydroxyapatite (HAp) films were deposited by electron cyclotron resonance plasma sputtering under a simultaneous flow of H2O vapor gas. Crystallization during sputter-deposition at elevated temperatures and solid-phase crystallization of amorphous films were compared in terms of film properties. When HAp films were deposited with Ar sputtering gas at temperatures above 460 °C, CaO byproducts precipitated with HAp crystallites. Using Xe instead of Ar resolved the compositional problem, yielding a single HAp phase. Preferentially c-axis-oriented HAp films were obtained at substrate temperatures between 460 and 500 °C and H2O pressures higher than 1×10-2 Pa. The absorption signal of the asymmetric stretching mode of the PO43- unit (ν3) in the Fourier-transform infrared absorption (FT-IR) spectra was the narrowest for films as-crystallized during deposition with Xe, but widest for solid-phase crystallized films. While the symmetric stretching mode of PO43- (ν1) is theoretically IR-inactive, this signal emerged in the FT-IR spectra of solid-phase crystallized films, but was absent for as-crystallized films, indicating superior crystallinity for the latter. The Raman scattering signal corresponding to ν1 PO43- sensitively reflected this crystallinity. The surface hardness of as-crystallized films evaluated by a pencil hardness test was higher than that of solid-phase crystallized films.

  7. Simulation of the electric potential and plasma generation coupling in magnetron sputtering discharges

    Science.gov (United States)

    Trieschmann, Jan; Krueger, Dennis; Schmidt, Frederik; Brinkmann, Ralf Peter; Mussenbrock, Thomas

    2016-09-01

    Magnetron sputtering typically operated at low pressures below 1 Pa is a widely applied deposition technique. For both, high power impulse magnetron sputtering (HiPIMS) as well as direct current magnetron sputtering (dcMS) the phenomenon of rotating ionization zones (also referred to as spokes) has been observed. A distinct spatial profile of the electric potential has been associated with the latter, giving rise to low, mid, and high energy groups of ions observed at the substrate. The adherent question of which mechanism drives this process is still not fully understood. This query is approached using Monte Carlo simulations of the heavy particle (i.e., ions and neutrals) transport consistently coupled to a pre-specified electron density profile via the intrinsic electric field. The coupling between the plasma generation and the electric potential, which establishes correspondingly, is investigated. While the system is observed to strive towards quasi-neutrality, distinct mechanisms governing the shape of the electric potential profile are identified. This work is supported by the German Research Foundation (DFG) in the frame of the transregional collaborative research centre TRR 87.

  8. Plasma polymer films rf sputtered from PTFE under various argon pressures

    Czech Academy of Sciences Publication Activity Database

    Stelmashuk, Vitaliy; Biederman, H.; Slavinská, D.; Zemek, Josef; Trchová, Miroslava

    2005-01-01

    Roč. 77, č. 2 (2005), s. 131-137 ISSN 0042-207X R&D Projects: GA MŠk(CZ) OC 527.10; GA MŠk(CZ) OC 527.90 Grant - others:EUREKAΣ2080(XE) OE57 Institutional research plan: CEZ:AV0Z10100521; CEZ:AV0Z20430508 Keywords : RF sputtering * PTFE * fluorcarbon plasma polymers * thin film * teflon * deposition Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.909, year: 2005

  9. Spectroscopic imaging of self-organization in high power impulse magnetron sputtering plasmas

    International Nuclear Information System (INIS)

    Andersson, Joakim; Ni, Pavel; Anders, André

    2013-01-01

    Excitation and ionization conditions in traveling ionization zones of high power impulse magnetron sputtering plasmas were investigated using fast camera imaging through interference filters. The images, taken in end-on and side-on views using light of selected gas and target atom and ion spectral lines, suggest that ionization zones are regions of enhanced densities of electrons, and excited atoms and ions. Excited atoms and ions of the target material (Al) are strongly concentrated near the target surface. Images from the highest excitation energies exhibit the most localized regions, suggesting localized Ohmic heating consistent with double layer formation

  10. Dependence of Au- production upon the target work function in a plasma-sputter-type negative ion source

    International Nuclear Information System (INIS)

    Okabe, Yushirou; Sasao, Mamiko; Fujita, Junji; Yamaoka, Hitoshi; Wada, Motoi.

    1991-01-01

    A method to measure the work function of the target surface in a plasma-sputter-type negative ion source has been developed. The method can determine the work function by measuring the photoelectric current induced by two lasers (He-Ne, Ar + laser). The dependence of Au - production upon the work function of the target surface in the ion source was studied using this method. The time variation of the target work function and Au - production rate were measured during the cesium coverage decrease due to the plasma ion sputtering. The observed minimum work function of a cesiated gold surface in an Ar plasma was 1.3 eV. At the same time, the negative ion production rate (Au - current/target current) took the maximum value. The negative ion production rate indicated the same dependence on the incident ion energy as that of the sputtering rate when the work function was constant. (author)

  11. Thin TiO2 films deposited by implantation and sputtering in RF inductively coupled plasmas

    International Nuclear Information System (INIS)

    Valencia-Alvarado, R; López-Callejas, R; Barocio, S R; Mercado-Cabrera, A; Peña-Eguiluz, R; Muñoz-Castro, A E; Rodríguez-Méndez, B G; De la Piedad-Beneitez, A; De la Rosa-Vázquez, J M

    2012-01-01

    The achievement of titanium dioxide (TiO 2 ) thin films in the rutile crystalline phase is reported. The samples result from the implantation of oxygen ions of Ti in argon/oxygen plasma generated by inductively coupled RF at a commercial 13.56 MHz frequency. Simultaneously, a sputtering process is conducted on the titanium target in order to produce TiO 2 thin films in the anatase phase over silicon and glass substrates. Both implantation and sputtering processes shared the same 500 W plasma with the target, polarized between 0 and -3 kV. The substrates were placed between 2 and 3 cm from the target, this distance being found to be determinant of the TiO 2 deposition rate. The rutile phase in the target was obtained at temperatures in the order of 680 degrees C and the anatase (unbiased) one at about 300 degrees C without any auxiliary heating. The crystalline phases were characterized by x ray diffraction and Raman spectroscopy. The morphology and average roughness were established by means of scanning electronic and atomic force microscopy, whereas the reaction products generated during the oxidation process were analyzed by mass spectrometry. Finally, the stoichiometric composition was measured by means of X-ray photoelectron spectroscopy.

  12. Feasibility of arc-discharge and plasma-sputtering methods in cleaning plasma-facing and diagnostics components of fusion reactors

    Energy Technology Data Exchange (ETDEWEB)

    Hakola, Antti, E-mail: antti.hakola@vtt.fi [VTT Technical Research Centre of Finland, VTT (Finland); Likonen, Jari [VTT Technical Research Centre of Finland, VTT (Finland); Karhunen, Juuso; Korhonen, Juuso T. [Department of Applied Physics, Aalto University (Finland); Aints, Märt; Laan, Matti; Paris, Peeter [Department of Physics, University of Tartu (Estonia); Kolehmainen, Jukka; Koskinen, Mika; Tervakangas, Sanna [DIARC-Technology Oy, Espoo (Finland)

    2015-10-15

    Highlights: • Feasibility of the arc-discharge and plasma-sputtering techniques in removing deposited layers from ITER-relevant samples demonstrated. • Samples with the size of an A4 paper can be cleaned from 1-μm thick deposited layers in 10–20 minutes by the arc-discharge method. • The plasma-sputtering method is 5–10 times slower but the resulting surfaces are very smooth. • Arc-discharge method could be used for rapid cleaning of plasma-facing components during maintenance shutdowns of ITER, plasma sputtering is preferred for diagnostics mirrors. - Abstract: We have studied the feasibility of arc-discharge and plasma-sputtering methods in removing deposited layers from ITER-relevant test samples. Prototype devices have been designed and constructed for the experiments and the cleaning process is monitored by a spectral detection system. The present version of the arc-discharge device is capable of removing 1-μm thick layers from 350-mm{sup 2} areas in 4–8 s, but due to the increased roughness of the cleaned surfaces and signs of local melting, mirror-like surfaces cannot be treated by this technique. The plasma-sputtering approach, for its part, is some 5–10 times slower in removing the deposited layers but no changes in surface roughness or morphology of the samples could be observed after the cleaning phase. The arc-discharge technique could therefore be used for rapid cleaning of plasma-facing components during maintenance shutdowns of ITER while in the case of diagnostics mirrors plasma sputtering is preferred.

  13. Hydrogen gas driven permeation through tungsten deposition layer formed by hydrogen plasma sputtering

    International Nuclear Information System (INIS)

    Uehara, Keiichiro; Katayama, Kazunari; Date, Hiroyuki; Fukada, Satoshi

    2015-01-01

    Highlights: • H permeation tests for W layer formed by H plasma sputtering are performed. • H permeation flux through W layer is larger than that through W bulk. • H diffusivity in W layer is smaller than that in W bulk. • The equilibrium H concentration in W layer is larger than that in W bulk. - Abstract: It is important to evaluate the influence of deposition layers formed on plasma facing wall on tritium permeation and tritium retention in the vessel of a fusion reactor from a viewpoint of safety. In this work, tungsten deposition layers having different thickness and porosity were formed on circular nickel plates by hydrogen RF plasma sputtering. Hydrogen permeation experiment was carried out at the temperature range from 250 °C to 500 °C and at hydrogen pressure range from 1013 Pa to 101,300 Pa. The hydrogen permeation flux through the nickel plate with tungsten deposition layer was significantly smaller than that through a bare nickel plate. This indicates that a rate-controlling step in hydrogen permeation was not permeation through the nickel plate but permeation though the deposition layer. The pressure dependence on the permeation flux differed by temperature. Hydrogen permeation flux through tungsten deposition layer is larger than that through tungsten bulk. From analysis of the permeation curves, it was indicated that hydrogen diffusivity in tungsten deposition layer is smaller than that in tungsten bulk and the equilibrium hydrogen concentration in tungsten deposition layer is enormously larger than that in tungsten bulk at same hydrogen pressure.

  14. Spatial survey of a magnetron plasma sputtering system using a Langmuir probe

    International Nuclear Information System (INIS)

    Field, D.J.; Dew, S.K.; Burrell, R.E.

    2002-01-01

    A two-dimensional spatial survey is conducted for a magnetron sputtering plasma at two pressures (40 and 5 mTorr) using a Langmuir probe. The plasma density is found to be highest (up to 6.0x10 10 cm -3 ) above the etch region of the cathode, near the magnetic trap. The density drops between the etch regions, near the edges of the cathode and also at distances farther away from the cathode. The floating potential was found to be most negative (down to -12 V) in regions where the highest electron temperatures were observed (up to almost 4 eV) and became less negative (near 0 V) in regions where the electron temperature was lowest (less than 0.5 eV). This complementary trend was consistent in all spatial locations and at both pressures. The plasma potential was found to have very weak dependence, if any, on spatial location and pressure. The relationship between electron transport processes, collision processes and electron temperatures is discussed. Electron energy distribution functions were found to be either Maxwellian or bi-Maxwellian in nature, depending on pressure and spatial location. Maxwellian distributions were found near the magnetic trap or source of the plasma. Bi-Maxwellian distributions were found further away from the source, and it appears they result from Maxwellian distributions bifurcating as they diffuse away from the source. The suitability of the popular models for this bifurcation is discussed

  15. Plasma analysis of inductively coupled impulse sputtering of Cu, Ti and Ni

    Science.gov (United States)

    Loch, D. A. L.; Aranda Gonzalvo, Y.; Ehiasarian, A. P.

    2017-06-01

    Inductively coupled impulse sputtering (ICIS) is a new development in the field of highly ionised pulsed PVD processes. For ICIS the plasma is generated by an internal inductive coil, replacing the need for a magnetron. To understand the plasma properties, measurements of the current and voltage waveforms at the cathode were conducted. The ion energy distribution functions (IEDFs) were measured by energy resolved MS and plasma chemistry was analysed by OES and then compared to a model. The target was operated in pulsed DC mode and the coil was energised by pulsed RF power, with a duty cycle of 7.5%. At a constant pressure (14 Pa) the set peak RF power was varied from 1000-4000 W. The DC voltage to the target was kept constant at 1900 V. OES measurements have shown a monotonic increase in intensity with increasing power. Excitation and ionisation processes were single step for ICIS of Ti and Ni and multi-step for Cu. The latter exhibited an unexpectedly steep rise in ionisation efficiency with power. The IEDFs measured by MS show the material- and time-dependant plasma potential in the range of 10-30 eV, ideal for increased surface mobility without inducing lattice defects. A lower intensity peak, of high energetic ions, is visible at 170 eV during the pulse.

  16. Production of Au clusters by plasma gas condensation and their incorporation in oxide matrixes by sputtering

    Science.gov (United States)

    Figueiredo, N. M.; Serra, R.; Manninen, N. K.; Cavaleiro, A.

    2018-05-01

    Gold clusters were produced by plasma gas condensation method and studied in great detail for the first time. The influence of argon flow, discharge power applied to the Au target and aggregation chamber length on the size distribution and deposition rate of Au clusters was evaluated. Au clusters with sizes between 5 and 65 nm were deposited with varying deposition rates and size dispersion curves. Nanocomposite Au-TiO2 and Au-Al2O3 coatings were then deposited by alternating sputtering. These coatings were hydrophobic and showed strong colorations due to the surface plasmon resonance effect. By simulating the optical properties of the nanocomposites it was possible to identify each individual contribution to the overall surface plasmon resonance signal. These coatings show great potential to be used as high performance localized surface plasmon resonance sensors or as robust self-cleaning decorative protective layers. The hybrid method used for depositing the nanocomposites offers several advantages over co-sputtering or thermal evaporation processes, since a broader range of particle sizes can be obtained (up to tens of nanometers) without the application of any thermal annealing treatments and the properties of clusters and matrix can be controlled separately.

  17. Comparative study of nanocomposites prepared by pulsed and dc sputtering combined with plasma polymerization suitable for photovoltaic device applications

    Energy Technology Data Exchange (ETDEWEB)

    Hussain, Amreen A. [Physical Sciences Division, Institute of Advanced Study in Science and Technology, Guwahati, Assam (India); Pal, Arup R., E-mail: arpal@iasst.gov.in [Physical Sciences Division, Institute of Advanced Study in Science and Technology, Guwahati, Assam (India); Kar, Rajib [Laser and Plasma Technology Division, Bhabha Atomic Research Center, Trombay, Mumbai (India); Bailung, Heremba; Chutia, Joyanti [Physical Sciences Division, Institute of Advanced Study in Science and Technology, Guwahati, Assam (India); Patil, Dinkar S. [Laser and Plasma Technology Division, Bhabha Atomic Research Center, Trombay, Mumbai (India)

    2014-12-15

    Plasma processing, a single step method for production of large area composite films, is employed to deposit plasma polymerized aniline-Titanium dioxide (PPani-TiO{sub 2}) nanocomposite thin films. The deposition of PPani-TiO{sub 2} nanocomposite films are made using reactive magnetron sputtering and plasma polymerization combined process. This study focuses on the direct comparison between continuous and pulsed dc magnetron sputtering techniques of titanium in combination with rf plasma polymerization of aniline. The deposited PPani-TiO{sub 2} nanocomposite films are characterized and discussed in terms of structural, morphological and optical properties. A self powered hybrid photodetector has been developed by plasma based process. The proposed method provides a new route where the self-assembly of molecules, that is, the spontaneous association of atomic or molecular building blocks under plasma environment, emerge as a successful strategy to form well-defined structural and morphological units of nanometer dimensions. - Highlights: • PPani-TiO{sub 2} nanocomposite by pulsed and dc sputtering with rf plasma polymerization. • In-situ and Ex-situ H{sub 2}SO{sub 4} doping in PPani-TiO{sub 2} nanocomposite. • PPani-TiO{sub 2} nanocomposite based self-powered-hybrid photodetector.

  18. Comparative study of nanocomposites prepared by pulsed and dc sputtering combined with plasma polymerization suitable for photovoltaic device applications

    International Nuclear Information System (INIS)

    Hussain, Amreen A.; Pal, Arup R.; Kar, Rajib; Bailung, Heremba; Chutia, Joyanti; Patil, Dinkar S.

    2014-01-01

    Plasma processing, a single step method for production of large area composite films, is employed to deposit plasma polymerized aniline-Titanium dioxide (PPani-TiO 2 ) nanocomposite thin films. The deposition of PPani-TiO 2 nanocomposite films are made using reactive magnetron sputtering and plasma polymerization combined process. This study focuses on the direct comparison between continuous and pulsed dc magnetron sputtering techniques of titanium in combination with rf plasma polymerization of aniline. The deposited PPani-TiO 2 nanocomposite films are characterized and discussed in terms of structural, morphological and optical properties. A self powered hybrid photodetector has been developed by plasma based process. The proposed method provides a new route where the self-assembly of molecules, that is, the spontaneous association of atomic or molecular building blocks under plasma environment, emerge as a successful strategy to form well-defined structural and morphological units of nanometer dimensions. - Highlights: • PPani-TiO 2 nanocomposite by pulsed and dc sputtering with rf plasma polymerization. • In-situ and Ex-situ H 2 SO 4 doping in PPani-TiO 2 nanocomposite. • PPani-TiO 2 nanocomposite based self-powered-hybrid photodetector

  19. Composite SiOx/hydrocarbon plasma polymer films prepared by RF magnetron sputtering of SiO2 and polyimide

    Czech Academy of Sciences Publication Activity Database

    Drabik, M.; Kousal, J.; Pinosh, Y.; Choukourov, A.; Biederman, H.; Slavínská, D.; Macková, Anna; Boldyryeva, Hanna; Pešička, J.

    2007-01-01

    Roč. 81, č. 7 (2007), s. 920-927 ISSN 0042-207X Institutional research plan: CEZ:AV0Z10480505 Keywords : composite films * magnetron * sputtering * polyimide * SiO2 Subject RIV: BL - Plasma and Gas Discharge Physics Impact factor: 0.881, year: 2007

  20. Structural, optical and electrical peculiarities of r.f. plasma sputtered indium tin oxide films

    International Nuclear Information System (INIS)

    Boycheva, Sylvia; Sytchkova, Anna Krasilnikova; Grilli, Maria Luisa; Piegari, Angela

    2007-01-01

    In this work the influence of the deposition conditions on the structural, electrical and optical properties of the ITO films was studied. Films were deposited by r.f. plasma sputtering technique in Ar and varying Ar + O 2 gas mixtures, with and without substrate heating. Transmittance and reflectance of the films were measured in the range 350-2500 nm; the refractive index (n) and the extinction coefficient (k) were calculated by the spectral data simulation. The sheet resistance of the films was measured by four-point probe method. X-ray diffraction analysis was performed to study the texture of the films. Threshold behaviour was observed in the optical and electrical properties of ITO films deposited in Ar + O 2 atmosphere at a certain oxygen concentration determined by a fix combination of all other deposition conditions. A schematic diagram for the change of the film properties versus composition was suggested, which explains the obtained results

  1. Peculiarities in film growth of ferroelectric complex oxides in ion-plasma sputtering

    International Nuclear Information System (INIS)

    Mukhortov, V.M.; Golovko, Yu.I.; Mukhortov, Vl.M.; Dudkevich, V.P.

    1981-01-01

    Experimental investigation into the process of complex oxide film growth (using BaTiO 3 and (Ba,Sr)TiO 3 as an example) during ion-plasma sputtering has been carried out. It is shown that neutral excited atoms are knocked out of a ceramic target during its ion bombardment. Removing from the target they loss energy at the expence of collisions and at some distance hsub(cr) the oxidation reaction (BaO, TiO, TiO 2 , SrO) becomes possible. So the ''construction'' material comes in either in the form of atoms or in the form of molecules of simple oxides depending on a distance between cathode and substrate. Two mechanisms of synthesis and crystallization distinguished with dependences of growth rate, elementary cell parameters and other structure characteristics on precipitation temperature correspond to two precipitation mechanisms. Part of re-evaporation and reduction processes is discussed [ru

  2. Titanium dioxide (TIO2) thin film and plasma properties in RF magnetron sputtering

    International Nuclear Information System (INIS)

    Ali, Riyaz Ahmad Mohamed; Nayan, Nafarizal

    2013-01-01

    Lately, titanium dioxide (TiO 2 ) films with anatase crystalline property received numerous attentions as unique material properties. There are wide applications of TiO 2 thin film such as for photocatalytic application in solar cell. In the present study, radio frequency (RF) magnetron sputtering technique has been used to produce high dense, homogeneously controllable film layer at low deposition temperature using titanium (Ti) target. The diameter of the Ti target is 3 inch with fixed discharge power of 400W. Magnetron sputtering plasma has been produced in high purity 99.99% Argon (Ar) and 99.99% Oxygen (O 2 ) environment pressure ranging from 5 to 20 mTorr. The TiO2 were growth on silicon and glass substrates. Substrate temperature during deposition was kept constant at 400°C. The distance between target and substrate holder was maintain at 14 cm with rotation of 10 rotation-per-minutes. Our X-ray diffraction result, shows anatase crystalline successfully formed with characterization peaks of plane (101) at 2θ = 25.28°, plane (202) at 2θ = 48.05° and plane (211) at 2θ = 55.06°. In addition, it is our interest to study the plasma properties and optical spectrum of Ti, Ti+ , O- , ArM and Ar+ in the chamber during the deposition process. Result of emission line intensities, electron density and temperature from optical spectroscope and Langmuir probe will be discuss further during the workshop. This works were supported by Graduate Incentive Scheme of Universiti Tun Hussein Onn Malaysia (UTHM) and Fundamental Research Grant Scheme of Ministry of Higher Education, Malaysia. (author)

  3. Heating of polymer substrate by discharge plasma in radiofrequency magnetron sputtering deposition

    International Nuclear Information System (INIS)

    Sirghi, Lucel; Popa, Gheorghe; Hatanaka, Yoshinori

    2006-01-01

    The substrate used for the thin film deposition in a radiofrequency magnetron sputtering deposition system is heated by the deposition plasma. This may change drastically the surface properties of the polymer substrates. Deposition of titanium dioxide thin films on polymethyl methacrylate and polycarbonate substrates resulted in buckling of the substrate surfaces. This effect was evaluated by analysis of atomic force microscopy topography images of the deposited films. The amount of energy received by the substrate surface during the film deposition was determined by a thermal probe. Then, the results of the thermal probe measurements were used to compute the surface temperature of the polymer substrate. The computation revealed that the substrate surface temperature depends on the substrate thickness, discharge power and substrate holder temperature. For the case of the TiO 2 film depositions in the radiofrequency magnetron plasma, the computation indicated substrate surface temperature values under the polymer melting temperature. Therefore, the buckling of polymer substrate surface in the deposition plasma may not be regarded as a temperature driven surface instability, but more as an effect of argon ion bombardment

  4. A High-Intensity, RF Plasma-Sputter Negative Ion Source

    International Nuclear Information System (INIS)

    Alton, G.D.; Bao, Y.; Cui, B.; Lohwasser, R.; Reed, C.A.; Zhang, T.

    1999-01-01

    A high-intensity, plasma-sputter negative-ion source based on the use of RF power for plasma generation has been developed that can be operated in either pulsed or dc modes. The source utilizes a high-Q, self-igniting, inductively coupled antenna system, operating at 80 MHz that has been optimized to generate Cs-seeded plasmas at low pressures (typically, - (610 microA); F - (100 microA); Si - (500 microA); S - (500 microA); P - (125 microA); Cl - (200 microA); Ni - (150 microA); Cu - (230 microA); Ge - (125 microA); As - (100 microA); Se - (200 microA); Ag - (70 microA); Pt - (125 microA); Au - (250 microA). The normalized emittance var e psilon n of the source at the 80% contour is: var e psilon n = 7.5 mm.mrad.(MeV) 1/2 . The design principles of the source, operational parameters, ion optics, emittance and intensities for a number of negative-ion species will be presented in this report

  5. Effect of plasma immersion on crystallinity of V2O5 film grown by dc reactive sputtering at room temperature

    International Nuclear Information System (INIS)

    Choi, Sun Hee; Kim, Joosun; Yoon, Young Soo

    2005-01-01

    Vanadium oxide thin films were grown at room temperature by direct current reactive sputtering. To investigate the effect of plasma immersion on the crystallinity of as-grown film, we immersed samples in plasma during the deposition process. X-ray diffraction (XRD) measurements show that as-deposited thin films immersed in plasma are crystalline, whereas those not immersed in the plasma are amorphous. Images taken with scanning electron microscopy show that the surface of films exposed to plasma have a different morphology to the surface of films not exposed to plasma. The Li-intercalation feature of as-deposited films immersed in plasma shows the typical behavior of crystalline vanadium oxide; such behavior is unsuitable for the cathode of thin film batteries (TFBs). These results indicate that direct current plasma promotes the growth of crystalline vanadium oxide films

  6. An economic analysis of the deposition of electrochromic WO3 via sputtering or plasma enhanced chemical vapor deposition

    International Nuclear Information System (INIS)

    Garg, D.; Henderson, P.B.; Hollingsworth, R.E.; Jensen, D.G.

    2005-01-01

    The costs of manufacturing electrochromic WO 3 thin films deposited by either radio frequency plasma enhanced chemical vapor deposition (PECVD) or DC reactive magnetron sputtering of metal targets were modeled. Both inline systems for large area glass substrates and roll-to-roll systems for flexible webs were compared. Costs of capital, depreciation, raw materials, labor, power, and other miscellaneous items were accounted for in the model. The results predict that on similar sized systems, PECVD can produce electrochromic WO 3 for as little as one-third the cost, and have more than 10 times the annual production capacity of sputtering. While PECVD cost is dominated by raw materials, primarily WF 6 , sputtering cost is dominated by labor and depreciation

  7. An economic analysis of the deposition of electrochromic WO{sub 3} via sputtering or plasma enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Garg, D. [Air Products and Chemicals Inc., 7201 Hamilton Blvd., Allentown, PA 18195-7201 (United States); Henderson, P.B. [Air Products and Chemicals Inc., 7201 Hamilton Blvd., Allentown, PA 18195-7201 (United States)]. E-mail: henderpb@airproducts.co; Hollingsworth, R.E. [ITN Energy Systems Inc., 8130 Shaffer Pkwy, Littleton, CO 80127 (United States); Jensen, D.G. [ITN Energy Systems Inc., 8130 Shaffer Pkwy, Littleton, CO 80127 (United States)

    2005-06-15

    The costs of manufacturing electrochromic WO{sub 3} thin films deposited by either radio frequency plasma enhanced chemical vapor deposition (PECVD) or DC reactive magnetron sputtering of metal targets were modeled. Both inline systems for large area glass substrates and roll-to-roll systems for flexible webs were compared. Costs of capital, depreciation, raw materials, labor, power, and other miscellaneous items were accounted for in the model. The results predict that on similar sized systems, PECVD can produce electrochromic WO{sub 3} for as little as one-third the cost, and have more than 10 times the annual production capacity of sputtering. While PECVD cost is dominated by raw materials, primarily WF{sub 6}, sputtering cost is dominated by labor and depreciation.

  8. Bright X-ray source from a laser-driven micro-plasma-waveguide

    CERN Document Server

    Yi, Longqing

    2016-01-01

    Bright tunable x-ray sources have a number of applications in basic science, medicine and industry. The most powerful sources are synchrotrons, where relativistic electrons are circling in giant storage rings. In parallel, compact laser-plasma x-ray sources are being developed. Owing to the rapid progress in laser technology, very high-contrast femtosecond laser pulses of relativistic intensities become available. These pulses allow for interaction with micro-structured solid-density plasma without destroying the structure by parasitic pre-pulses. The high-contrast laser pulses as well as the manufacturing of materials at micro- and nano-scales open a new realm of possibilities for laser interaction with photonic materials at the relativistic intensities. Here we demonstrate, via numerical simulations, that when coupling with a readily available 1.8 Joule laser, a micro-plasma-waveguide (MPW) may serve as a novel compact x-ray source. Electrons are extracted from the walls by the laser field and form a dense ...

  9. Bright ultrashort x-rays from intense subpicosecond laser-plasma interactions

    International Nuclear Information System (INIS)

    Umstadter, D.

    1995-01-01

    Short-pulse, high-intensity lasers interacting with solid targets make possible the study of a new class of laser-plasma interactions. They are unique because during the ultrashort laser pulse relatively little expansion occurs, and the density scale length remains much less than the laser wavelength. This makes possible the direct deposition of a significant amount of the laser energy at close to solid density. Steep plasma temperature and density gradients subsequently cause rapid cooling, resulting in highly non-equilibrium conditions and the concurrent emission of extremely bright ultrashort x-ray pulses. In this study, the latter are investigated experimentally with temporally and spectrally resolved soft x-ray diagnostics. The emitted x-ray spectra from solid targets with various atomic numbers are characterized for a laser pulse width τ l ∼ 400 fs. These ultrashort x rays may be used as (1) a diagnostic of solid-density plasma conditions, (2) a tool for the study of radiation hydrodynamics in a parameter regime that is otherwise inaccessible, and (3) a source for time-resolved diffraction, spectroscopy, or microscopy studies of transient chemical, biological or physical phenomena

  10. Optical emission and mass spectroscopy of plasma processes in reactive DC pulsed magnetron sputtering of aluminium oxide

    Czech Academy of Sciences Publication Activity Database

    Novotný, Michal; Bulíř, Jiří; Pokorný, Petr; Bočan, Jiří; Fitl, Přemysl; Lančok, Ján; Musil, Jindřich

    2010-01-01

    Roč. 12, č. 3 (2010), 697-700 ISSN 1454-4164 R&D Projects: GA AV ČR IAA100100718; GA AV ČR KAN400100653; GA ČR GP202/09/P324 Institutional research plan: CEZ:AV0Z10100522 Keywords : reactive magnetron sputtering * alumina * plasma spectroscopy * mass spectroscopy * optical emission spectroscopy Subject RIV: BH - Optics, Masers, Lasers Impact factor: 0.412, year: 2010

  11. Deuterium trapping in tungsten deposition layers formed by deuterium plasma sputtering

    International Nuclear Information System (INIS)

    Alimov, V.Kh.; Roth, J.; Shu, W.M.; Komarov, D.A.; Isobe, K.; Yamanishi, T.

    2010-01-01

    A study of the influence of the deposition conditions on the surface morphology and deuterium (D) concentration in tungsten (W) deposition layers formed by magnetron sputtering and in the linear plasma generator has been carried out. Thick W layers (≥0.4 μm) deposited onto copper substrates demonstrate areas of pilling and, after post-deposition heating to 1300 K, flaking-off and fracturing. For thin W layers (≤80 nm) deposited onto stainless steel (SS) and W substrates, no areas of flaking-off and fracturing exist both after deposition and after post-deposition heating to 673 K for the SS substrate and to 1300 K for the W substrate. The concentration of deuterium in the W layers was found to decrease with increasing substrate temperature and with increasing tungsten deposition rate. For layers with relatively high concentration of oxygen (0.20-0.60 O/W), a decrease of the D concentration with increasing substrate temperature is more pronounced than that for layers deposited in good vacuum conditions. To describe the evolution of the D/W ratio with the substrate temperature and the tungsten deposition rate, an empirical equation proposed by De Temmerman and Doerner [J. Nucl. Mater. 389 (2009) 479] but with alternative parameters has been used.

  12. Characteristics of growth of complex ferroelectric oxide films by plasma-ion sputtering

    Science.gov (United States)

    Mukhortov, V. M.; Golovko, Yu. I.; Mukhortov, Vl. M.; Dudkevich, V. P.

    1981-02-01

    An experimental investigation was made of the process of growth of a complex oxide film, such as BaTiO3 or (Ba, Sr)TiO3, by plasma-ion sputtering. It was found that ion bombardment of a ceramic target knocked out neutral excited atoms. These atoms lost energy away from the target by collisions and at a certain critical distance hcr they were capable of oxidation to produce BaO, TiO, TiO2, and SrO. Therefore, depending on the distance between the cathode and the substrate, the “construction” material arrived in the form of atoms or molecules of simple oxides. These two (atomic and molecular) deposition mechanisms corresponded to two mechanisms of synthesis and crystallization differing in respect of the dependences of the growth rate, unit cell parameters, and other structural properties on the deposition temperature. The role of re-evaporation and of oxidation-reduction processes was analyzed.

  13. A high-intensity plasma-sputter heavy negative ion source

    International Nuclear Information System (INIS)

    Alton, G.D.; Mori, Y.; Takagi, A.; Ueno, A.; Fukumoto, S.

    1989-01-01

    A multicusp magnetic field plasma surface ion source, normally used for H/sup /minus//ion beam formation, has been modified for the generation of high-intensity, pulsed, heavy negative ion beams suitable for a variety of uses. To date, the source has been utilized to produce mA intensity pulsed beams of more than 24 species. A brief description of the source, and basic pulsed-mode operational data, (e.g., intensity versus cesium oven temperature, sputter probe voltage, and discharge pressure), are given. In addition, illustrative examples of intensity versus time and the mass distributions of ion beams extracted from a number of samples along with emittance data, are also presented. Preliminary results obtained during dc operation of the source under low discharge power conditions suggest that sources of this type may also be used to produce high-intensity (mA) dc beams. The results of these investigations are given, as well, and the technical issues that must be addressed for this mode of operation are discussed. 15 refs., 10 figs., 2 tabs

  14. Cluster ion formation during sputtering processes: a complementary investigation by ToF-SIMS and plasma ion mass spectrometry

    International Nuclear Information System (INIS)

    Welzel, T; Ellmer, K; Mändl, S

    2014-01-01

    Plasma ion mass spectrometry using a plasma process monitor (PPM) and time-of-flight secondary ion mass spectrometry (ToF-SIMS) have been complementarily employed to investigate the sputtering and ion formation processes of Al-doped zinc oxide. By comparing the mass spectra, insights on ion formation and relative cross-sections have been obtained: positive ions as measured during magnetron sputtering by PPM are originating from the plasma while those in SIMS start at the surface leading to large differences in the mass spectra. In contrast, negative ions originating at the surface will be accelerated through the plasma sheath. They arrive at the PPM after traversing the plasma nearly collisionless as seen from the rather similar spectra. Hence, it is possible to combine the high mass resolution of ToF-SIMS to obtain insight for separating cluster ions, e.g. Zn x and ZnO y , and the energy resolution of PPM to find fragmentation patterns for negative ions. While the ion formation processes during both experiments can be assumed to be similar, differences may arise due to the lower volume probed by SIMS. In the latter case, there is a chance of small target inhomogeneities being able to be enhanced and lower surface temperatures leading to less outgassing and, thus, retention of volatile compounds. (paper)

  15. Sputtering yields and surface chemical modification of tin-doped indium oxide in hydrocarbon-based plasma etching

    Energy Technology Data Exchange (ETDEWEB)

    Li, Hu; Karahashi, Kazuhiro; Hamaguchi, Satoshi, E-mail: hamaguch@ppl.eng.osaka-u.ac.jp [Center for Atomic and Molecular Technologies, Osaka University, Yamadaoka 2-1, Suita 565-0871 (Japan); Fukasawa, Masanaga; Nagahata, Kazunori; Tatsumi, Tetsuya [Device and Material R& D Group, RDS Platform, Sony Corporation, Kanagawa 243-0014 (Japan)

    2015-11-15

    Sputtering yields and surface chemical compositions of tin-doped indium oxide (or indium tin oxide, ITO) by CH{sup +}, CH{sub 3}{sup +}, and inert-gas ion (He{sup +}, Ne{sup +}, and Ar{sup +}) incidence have been obtained experimentally with the use of a mass-selected ion beam system and in-situ x-ray photoelectron spectroscopy. It has been found that etching of ITO is chemically enhanced by energetic incidence of hydrocarbon (CH{sub x}{sup +}) ions. At high incident energy incidence, it appears that carbon of incident ions predominantly reduce indium (In) of ITO and the ITO sputtering yields by CH{sup +} and CH{sub 3}{sup +} ions are found to be essentially equal. At lower incident energy (less than 500 eV or so), however, a hydrogen effect on ITO reduction is more pronounced and the ITO surface is more reduced by CH{sub 3}{sup +} ions than CH{sup +} ions. Although the surface is covered more with metallic In by low-energy incident CH{sub 3}{sup +} ions than CH{sup +} ions and metallic In is in general less resistant against physical sputtering than its oxide, the ITO sputtering yield by incident CH{sub 3}{sup +} ions is found to be lower than that by incident CH{sup +} ions in this energy range. A postulation to account for the relation between the observed sputtering yield and reduction of the ITO surface is also presented. The results presented here offer a better understanding of elementary surface reactions observed in reactive ion etching processes of ITO by hydrocarbon plasmas.

  16. Effect of morning bright light on body temperature, plasma cortisol and wrist motility measured during 24 hour of constant conditions.

    Science.gov (United States)

    Foret, J; Aguirre, A; Touitou, Y; Clodoré, M; Benoit, O

    1993-06-11

    Using 24 h constant conditions, time course of body temperature, plasma cortisol and wrist motility was measured in response to a 3 day morning 2 h bright light pulse. This protocol demonstrated that a 2000 lux illumination was sufficient to elicit a shift of about 2 h of temperature minimum and cortisol peak. In reference session, actimetric recordings showed a circadian time course, closely in relation with core temperature. Bright light pulse resulted in a decrease of amplitude and a disappearance of circadian pattern of actimetry.

  17. A study of the plasma electronegativity in an argon-oxygen pulsed-dc sputter magnetron

    International Nuclear Information System (INIS)

    You, S D; Dodd, R; Edwards, A; Bradley, J W

    2010-01-01

    Using Langmuir probe-assisted laser photodetachment, the temporal evolution of the O - density was determined in the bulk plasma of a unipolar pulsed-dc magnetron. The source was operated in reactive mode, at a fixed nominal on-time power of 100 W, sputtering Ti in argon-oxygen atmospheres at 1.3 Pa pressure, but over a variation of duty cycles from 5% to 50% and oxygen partial pressures of 10% and 50% of the total pressure. In the plasma on-time, for all duty cycles the negative ion density (n - ) rises marginally reaching values typically less than 2 x 10 15 m -3 with negative ion-to-electron density ratios, α - falls by about 20-30% as fast O - species created at the cathode exit the system. This is followed by a rapid rise in n - to values at least 2 or 3 times that in the on-time. The rate of rise of n - and its maximum value both increase with decreasing duty cycle. In the off-time, the electron density falls rapidly (initial decay rates of several tens of μs), and therefore the afterglow plasma becomes highly electronegative, with α reaching 4.6 and 14.4 for 10% and 50% oxygen partial pressure, respectively. The rapid rise in n - in the afterglow (in which the electron temperature falls from about 5 to 0.5 eV) is attributed to the dissociative attachment of highly excited oxygen metastables, which themselves are created in the pulse on-time. At the lowest duty of 5%, the long-term O - decay times are several hundred μs. Langmuir probe characteristics show the clear signature that negative ions dominate over the electrons in the off-time. From the ion and electron saturation current ratios, α has been estimated in some chosen cases and found to agree within a factor between 2 and 10 with those obtained more directly from the photodetachment method.

  18. Properties of Erbium Doped Hydrogenated Amorphous Carbon Layers Fabricated by Sputtering and Plasma Assisted Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    V. Prajzler

    2008-01-01

    Full Text Available We report about properties of carbon layers doped with Er3+ ions fabricated by Plasma Assisted Chemical Vapor Deposition (PACVD and by sputtering on silicon or glass substrates. The structure of the samples was characterized by X-ray diffraction and their composition was determined by Rutherford Backscattering Spectroscopy and Elastic Recoil Detection Analysis. The Absorbance spectrum was taken in the spectral range from 400 nm to 600 nm. Photoluminescence spectra were obtained using two types of Ar laser (λex=514.5 nm, lex=488 nm and also using a semiconductor laser (λex=980 nm. Samples fabricated by magnetron sputtering exhibited typical emission at 1530 nm when pumped at 514.5 nm. 

  19. Fabrication and characterization of He-charged ODS-FeCrNi films deposited by a radio-frequency plasma magnetron sputtering technique

    Science.gov (United States)

    Song, Liang; Wang, Xianping; Wang, Le; Zhang, Ying; Liu, Wang; Jiang, Weibing; Zhang, Tao; Fang, Qianfeng; Liu, Changsong

    2017-04-01

    He-charged oxide dispersion strengthened (ODS) FeCrNi films were prepared by a radio-frequency (RF) plasma magnetron sputtering method in a He and Ar mixed atmosphere at 150 °C. As a comparison, He-charged FeCrNi films were also fabricated at the same conditions through direct current (DC) plasma magnetron sputtering. The doping of He atoms and Y2O3 in the FeCrNi films was realized by the high backscattered rate of He ions and Y2O3/FeCrNi composite target sputtering method, respectively. Inductive coupled plasma (ICP) and x-ray photoelectron spectroscopy (XPS) analysis confirmed the existence of Y2O3 in FeCrNi films, and Y2O3 content hardly changed with sputtering He/Ar ratio. Cross-sectional scanning electron microscopy (SEM) shows that the FeCrNi films were composed of dense columnar nanocrystallines and the thickness of the films was obviously dependent on He/Ar ratio. Nanoindentation measurements revealed that the FeCrNi films fabricated through DC/RF plasma magnetron sputtering methods exhibited similar hardness values at each He/Ar ratio, while the dispersion of Y2O3 apparently increased the hardness of the films. Elastic recoil detection (ERD) showed that DC/RF magnetron sputtered FeCrNi films contained similar He amounts (˜17 at.%). Compared with the minimal change of He level with depth in DC-sputtered films, the He amount decreases gradually in depth in the RF-sputtered films. The Y2O3-doped FeCrNi films were shown to exhibit much smaller amounts of He owing to the lower backscattering possibility of Y2O3 and the inhibition effect of nano-sized Y2O3 particles on the He element.

  20. Distribution of Fe atom density in a dc magnetron sputtering plasma source measured by laser-induced fluorescence imaging spectroscopy

    Science.gov (United States)

    Shibagaki, K.; Nafarizal, N.; Sasaki, K.; Toyoda, H.; Iwata, S.; Kato, T.; Tsunashima, S.; Sugai, H.

    2003-10-01

    Magnetron sputtering discharge is widely used as an efficient method for thin film fabrication. In order to achieve the optimized fabrication, understanding of the kinetics in plasmas is essential. In the present work, we measured the density distribution of sputtered Fe atoms using laser-induced fluorescence imaging spectroscopy. A dc magnetron plasma source with a Fe target was used. An area of 20 × 2 mm in front of the target was irradiated by a tunable laser beam having a planar shape. The picture of laser-induced fluorescence on the laser beam was taken using an ICCD camera. In this way, we obtained the two-dimensional image of the Fe atom density. As a result, it has been found that the Fe atom density observed at a distance of several centimeters from the target is higher than that adjacent to the target, when the Ar gas pressure was relatively high. It is suggested from this result that some gas-phase production processes of Fe atoms are available in the plasma. This work has been performed under the 21st Century COE Program by the Ministry of Education, Culture, Sports, Science and Technology in Japan.

  1. Modification of the electronic properties of As2Se3 films by erbium using ion-plasma sputtering method

    International Nuclear Information System (INIS)

    Prikhodko, O.Yu.; Sarsembinov, Sh.Sh.; Ryaguzov, A.P.; Maksimova, S.Ya.; Chuprynin, A.S.

    2003-01-01

    At present one of the vital problems of semiconductor materials studies is production of new light emitting materials for fiber optics, namely for light-emitting diode, emitting at room temperature in the range of minimum absorption of quartz optic fiber. It is well-known that heterostructures based on amorphous semiconductors, containing large concentrations of rare-earth elements have such properties. The method of ion-plasma co-sputtering (IPCM) of the original and doping materials allows us to obtain amorphous semiconductor films with large impurity concentration. This method was used to produce amorphous films of chalcogenide vitreous semiconductors (ChVS), doped with impurities of different chemical nature. But the capability of IPCM for ChVS doping with rare-earth elements has not been studied well yet. Therefore it is interesting to obtain amorphous films of arsenic selenide doped with erbium using IPCM and study its electronic properties. The films were produced using high frequency (13.56 MHz) ion-plasma co-sputtering of combined target of vitreous As 2 Se 3 and a metal. The sputtering of the target was conducted in argon atmosphere. Er concentration in the films varied between 0 and 4 atomic percent. Amorphism of the structure of the obtained films was monitored using X-ray diffraction methods. Electrical and optical properties of Er-doped As 2 Se 3 films and the charge carrier transportation processes were studied. It was determined that doped films significantly differ from the pure ones in the values of main electronic parameters: conductivity, energy activation of conductivity, optical band-gap, drift mobility of electrons and holes and mobility activation energy. Note that common rules of change of electronic parameters of As 2 Se 3 films affected by Er doping agree with the rules, established during modification of As 2 Se 3 films with dopes of transition metals with incomplete 3d-shell (Fe, Ni). Analysis of the obtained results showed that doing

  2. Spectroscopic ellipsometry on Si/SiO2/graphene tri-layer system exposed to downstream hydrogen plasma: Effects of hydrogenation and chemical sputtering

    International Nuclear Information System (INIS)

    Eren, Baran; Fu, Wangyang; Marot, Laurent; Calame, Michel; Steiner, Roland; Meyer, Ernst

    2015-01-01

    In this work, the optical response of graphene to hydrogen plasma treatment is investigated with spectroscopic ellipsometry measurements. Although the electronic transport properties and Raman spectrum of graphene change after plasma hydrogenation, ellipsometric parameters of the Si/SiO2/graphene tri-layer system do not change. This is attributed to plasma hydrogenated graphene still being electrically conductive, since the light absorption of conducting 2D materials does not depend on the electronic band structure. A change in the light transmission can only be observed when higher energy hydrogen ions (30 eV) are employed, which chemically sputter the graphene layer. An optical contrast is still apparent after sputtering due to the remaining traces of graphene and hydrocarbons on the surface. In brief, plasma treatment does not change the light transmission of graphene; and when it does, this is actually due to plasma damage rather than plasma hydrogenation

  3. Spectroscopic ellipsometry on Si/SiO{sub 2}/graphene tri-layer system exposed to downstream hydrogen plasma: Effects of hydrogenation and chemical sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Eren, Baran [Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel (Switzerland); Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Fu, Wangyang; Marot, Laurent, E-mail: laurent.marot@unibas.ch; Calame, Michel; Steiner, Roland; Meyer, Ernst [Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel (Switzerland)

    2015-01-05

    In this work, the optical response of graphene to hydrogen plasma treatment is investigated with spectroscopic ellipsometry measurements. Although the electronic transport properties and Raman spectrum of graphene change after plasma hydrogenation, ellipsometric parameters of the Si/SiO2/graphene tri-layer system do not change. This is attributed to plasma hydrogenated graphene still being electrically conductive, since the light absorption of conducting 2D materials does not depend on the electronic band structure. A change in the light transmission can only be observed when higher energy hydrogen ions (30 eV) are employed, which chemically sputter the graphene layer. An optical contrast is still apparent after sputtering due to the remaining traces of graphene and hydrocarbons on the surface. In brief, plasma treatment does not change the light transmission of graphene; and when it does, this is actually due to plasma damage rather than plasma hydrogenation.

  4. Copper deposition on fabrics by rf plasma sputtering for medical applications

    International Nuclear Information System (INIS)

    Segura, G; Guzmán, P; Barrantes, Y; Navarro, G; Asenjo, J; Guadamuz, S; Vargas, VI; Zuñiga, P; Chaves, S; Chaves, J

    2015-01-01

    The present work is about preparation and characterization of RF sputtered Cu films on cotton by the usage of a Magnetron Sputter Source and 99.995% purity Cu target at room temperature. Cotton fabric samples of 1, 2 and 4 min of sputtering time at discharge pressure of 1×10 −2 Torr and distance between target and sample of 8 cm were used. The main goal was to qualitatively test the antimicrobial action of copper on fabrics. For that purpose, a reference strain of Escherichia Coli ATCC 35218 that were grown in TSA plates was implemented. Results indicated a decrease in the growth of bacteria by contact with Cu; for fabric samples with longer sputtering presented lower development of E. coli colonies. The scope of this research focused on using these new textiles in health field, for example socks can be made with this textile for the treatment of athlete's foot and the use in pajamas, sheets, pillow covers and robes in hospital setting for reducing the spread of microorganisms. (paper)

  5. Thin films of thermoelectric compound Mg2Sn deposited by co-sputtering assisted by multi-dipolar microwave plasma

    International Nuclear Information System (INIS)

    Le-Quoc, H.; Lacoste, A.; Hlil, E.K.; Bes, A.; Vinh, T. Tan; Fruchart, D.; Skryabina, N.

    2011-01-01

    Highlights: → Mg 2 Sn thin films deposited by plasma co-sputtering, on silicon and glass substrates. → Formation of nano-grained polycrystalline films on substrates at room temperature. → Structural properties vary with target biasing and target-substrate distance. → Formation of the hexagonal phase of Mg 2 Sn in certain deposition conditions. → Power factor ∼5.0 x 10 -3 W K -2 m -1 for stoichiometric Mg 2 Sn films doped with ∼1 at.% Ag. - Abstract: Magnesium stannide (Mg 2 Sn) thin films doped with Ag intended for thermoelectric applications are deposited on both silicon and glass substrates at room temperature by plasma assisted co-sputtering. Characterization by scanning electron microscopy, energy-dispersive X-ray spectroscopy and X-ray diffraction confirms the formation of fine-grained polycrystalline thin films with thickness of 1-3 μm. Stoichiometry, microstructure and crystal structure of thin films are found to vary with target biasing and the distance from targets to substrate. Measurements of electrical resistivity and Seebeck coefficient at room temperature show the maximum power factor of ∼5.0 x 10 -3 W K -2 m -1 for stoichiometric Mg 2 Sn thin films doped with ∼1 at.% Ag.

  6. Modulational instability: Conservation laws and bright soliton solution of ion-acoustic waves in electron-positron-ion-dust plasmas

    Science.gov (United States)

    EL-Kalaawy, O. H.

    2018-02-01

    We consider the nonlinear propagation of non-planar (cylindrical and spherical) ion-acoustic (IA) envelope solitary waves in an unmagnetized plasma consisting of electron-positron-ion-dust plasma with two-electron temperature distributions in the context of the non-extensive statistics. The basic set of fluid equations is reduced to the modified nonlinear Schrödinger (MNLS) equation in cylindrical and spherical geometry by using the reductive perturbation method (RPM). It is found that the nature of the modulational instabilities would be significantly modified due to the effects of the non-extensive and other plasma parameters as well as cylindrical and spherical geometry. Conservation laws of the MNLS equation are obtained by Lie symmetry and multiplier method. A new exact solution (envelope bright soliton) is obtained by the extended homogeneous balance method. Finally, we study the results of this article.

  7. Impact of Plasma Electron Flux on Plasma Damage-Free Sputtering of Ultrathin Tin-Doped Indium Oxide Contact Layer on p-GaN for InGaN/GaN Light-Emitting Diodes.

    Science.gov (United States)

    Son, Kwang Jeong; Kim, Tae Kyoung; Cha, Yu-Jung; Oh, Seung Kyu; You, Shin-Jae; Ryou, Jae-Hyun; Kwak, Joon Seop

    2018-02-01

    The origin of plasma-induced damage on a p -type wide-bandgap layer during the sputtering of tin-doped indium oxide (ITO) contact layers by using radiofrequency-superimposed direct current (DC) sputtering and its effects on the forward voltage and light output power (LOP) of light-emitting diodes (LEDs) with sputtered ITO transparent conductive electrodes (TCE) is systematically studied. Changing the DC power voltage from negative to positive bias reduces the forward voltages and enhances the LOP of the LEDs. The positive DC power drastically decreases the electron flux in the plasma obtained by plasma diagnostics using a cutoff probe and a Langmuir probe, suggesting that the repulsion of plasma electrons from the p -GaN surface can reduce plasma-induced damage to the p -GaN. Furthermore, electron-beam irradiation on p -GaN prior to ITO deposition significantly increases the forward voltages, showing that the plasma electrons play an important role in plasma-induced damage to the p -GaN. The plasma electrons can increase the effective barrier height at the ITO/deep-level defect (DLD) band of p -GaN by compensating DLDs, resulting in the deterioration of the forward voltage and LOP. Finally, the plasma damage-free sputtered-ITO TCE enhances the LOP of the LEDs by 20% with a low forward voltage of 2.9 V at 20 mA compared to LEDs with conventional e-beam-evaporated ITO TCE.

  8. Hysteresis behaviour of silver sputtered in different plasma atmospheres at constant flow rates

    International Nuclear Information System (INIS)

    Rizk, A.; Makar, L.N.; Rizk, N.S.; Shinoda, R.

    1990-01-01

    The effects of ion bombardment on sputtering behaviour of pure silver targets in inert and active gas atmospheres were investigated, using a dc planar magnetron sputtering system. The obtained current-voltage characteristics showed the formation of hysteresis loops without noticeable sharp transitions. Redeposited layers of silver nitride or silver oxide on the target surface when using nitrogen or oxygen in the glow discharge, residual ionization when using dry argon atmosphere were considered the main reasons for the occurrence of these loops. The results indicate that films of AgN x and AgO x can be deposited with controlled x in the range 0 ≤ x ≤ 1 using voltage control at constant gas flow rates. (author)

  9. Nucleation of ultrathin silver layer by magnetron sputtering in Ar/N2 plasma

    Czech Academy of Sciences Publication Activity Database

    Bulíř, Jiří; Novotný, Michal; Lančok, Ján; Fekete, Ladislav; Drahokoupil, Jan; Musil, Jindřich

    2013-01-01

    Roč. 228, č. 1 (2013), S86-S90 ISSN 0257-8972 R&D Projects: GA ČR(CZ) GAP108/11/1298; GA ČR GP202/09/P324 Institutional support: RVO:68378271 Keywords : ultrathin silver * magnetron sputtering * spectral ellipsometry * in-situ monitoring Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.199, year: 2013

  10. Far-and mid-infrared properties of carbon layers elaborated by plasma sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Rousseau, Benoit, E-mail: benoit.rousseau@univ-nantes.fr [Université de Nantes, CNRS, LTN UMR6607, La Chantrerie, Rue Christian Pauc, B.P. 50609, F-44306 Nantes Cedex 3 (France); Ammar, Mohamed Ramzi; Bormann, Denis; Simon, Patrick [CNRS, CEMHTI UPR3079, Université d' Orléans, F-55071 (France); Rabat, Hervé; Brault, Pascal [Université d' Orléans, CNRS, GREMI UMR7344, BP 6744, F-45067 Orléans Cedex 2 (France)

    2016-12-30

    Highlights: • Magnetron sputtering deposition of columnar, disordered carbon films. • Sputtered carbon films infrared properties are dependent on the local order. • Film texture at the micro-nanoscale explains difference of optical properties. - Abstract: The far-and mid-infrared reflectivity spectra of two carbon layers deposited on pure (100) silicon substrates by DC magnetron sputtering were investigated at room temperature in the 10–5000 cm{sup −1} wavenumber range. Their structural and textural features were also studied by combining Raman spectroscopy, Field Emission Scanning Electron Microscopy (FESEM), High Resolution Transmission Electron Microscopy (HRTEM), X-Ray Reflectivity (XRR) and Rutherford Backscattering Spectroscopy (RBS). The set of results was used to discuss afterwards the influence of the texture on the infrared properties at varying length scale. Thereby, the two layers were found to be heterogeneous as assessed by RBS, XRR and FESEM and their thicknesses had been measured by XRR and FESEM. The information on the structural organization and “crystallite” size was given by Raman spectroscopy. The influence of both the textural and structural parameters on the measured infrared reflectivity spectra was discussed. Finally, a methodology was proposed to recover the intrinsic index of refraction and the intrinsic index of absorption of each layer.

  11. Single-stage plasma-based correlated energy spread compensation for ultrahigh 6D brightness electron beams

    Science.gov (United States)

    Manahan, G. G.; Habib, A. F.; Scherkl, P.; Delinikolas, P.; Beaton, A.; Knetsch, A.; Karger, O.; Wittig, G.; Heinemann, T.; Sheng, Z. M.; Cary, J. R.; Bruhwiler, D. L.; Rosenzweig, J. B.; Hidding, B.

    2017-06-01

    Plasma photocathode wakefield acceleration combines energy gains of tens of GeV m-1 with generation of ultralow emittance electron bunches, and opens a path towards 5D-brightness orders of magnitude larger than state-of-the-art. This holds great promise for compact accelerator building blocks and advanced light sources. However, an intrinsic by-product of the enormous electric field gradients inherent to plasma accelerators is substantial correlated energy spread--an obstacle for key applications such as free-electron-lasers. Here we show that by releasing an additional tailored escort electron beam at a later phase of the acceleration, when the witness bunch is relativistically stable, the plasma wave can be locally overloaded without compromising the witness bunch normalized emittance. This reverses the effective accelerating gradient, and counter-rotates the accumulated negative longitudinal phase space chirp of the witness bunch. Thereby, the energy spread is reduced by an order of magnitude, thus enabling the production of ultrahigh 6D-brightness beams.

  12. Temperature dependence of InN film deposition by an RF plasma-assisted reactive ion beam sputtering deposition technique

    International Nuclear Information System (INIS)

    Shinoda, Hiroyuki; Mutsukura, Nobuki

    2005-01-01

    Indium nitride (InN) films were deposited on Si(100) substrates using a radiofrequency (RF) plasma-assisted reactive ion beam sputtering deposition technique at various substrate temperatures. The X-ray diffraction patterns of the InN films suggest that the InN films deposited at substrate temperatures up to 370 deg C were cubic crystalline InN; and at 500 deg C, the InN film was hexagonal crystalline InN. In a scanning electron microscope image of the InN film surface, facets of cubic single-crystalline InN grains were clearly observed on the InN film deposited at 370 deg C. The inclusion of metallic indium appeared on the InN film deposited at 500 deg C

  13. Influence of plasma pressure on the growth characteristics and ferroelectric properties of sputter-deposited PZT thin films

    International Nuclear Information System (INIS)

    Bose, A.; Maity, T.; Bysakh, S.; Seal, A.; Sen, Suchitra

    2010-01-01

    PZT thin films of thickness (320-1040) nm were synthesized on Si/SiO 2 /Ti/Pt multilayered substrates by radio frequency magnetron sputtering. The influence of plasma pressure in the range of (0.24-4.9) Pa, during deposition, on the structural, electrical and ferroelectric properties of the PZT films was systematically studied. X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM) and cross-sectional transmission electron microscopy (XTEM) were employed for structural study. Nano-probe Energy Dispersive (EDX) line scanning was employed to investigate the elemental distribution across the film-bottom electrode interface. I-V characteristics and polarization-electric field (P-E) hysteresis loop of the films were measured. The study reveals that the plasma pressure has a strong influence on the evolution and texture of the ferroelectric perovskite phase and microstructure of the films. At an optimum plasma pressure of 4.1 Pa, PZT films are grown with 93% perovskite phase with (1 1 1) preferred orientation and uniform granular microstructure. These films show a saturation polarization of 67 μC/cm 2 , remnant polarization of 30 μC/cm 2 and coercive field of 28 kV/cm which, according to the literature, seem to be suitable for device applications. Transmission electron microscopy (TEM) study shows that at a plasma pressure of 4.1 Pa, the PZT/bottom Pt interface is sharp and no amorphous interlayer is formed at the interface. At a higher plasma pressure of 4.9 Pa, poor I-V and P-E hysteresis loop are observed which are interpreted as due to an amorphous interlayer at the film-bottom electrode interface which is possibly enriched in Pb, Zr, O and Pt.

  14. Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates

    Energy Technology Data Exchange (ETDEWEB)

    Brennan, Christopher J.; Neumann, Christopher M.; Vitale, Steven A., E-mail: steven.vitale@ll.mit.edu [Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02420 (United States)

    2015-07-28

    Fully depleted silicon-on-insulator transistors were fabricated using two different metal gate deposition mechanisms to compare plasma damage effects on gate oxide quality. Devices fabricated with both plasma-enhanced atomic-layer-deposited (PE-ALD) TiN gates and magnetron plasma sputtered TiN gates showed very good electrostatics and short-channel characteristics. However, the gate oxide quality was markedly better for PE-ALD TiN. A significant reduction in interface state density was inferred from capacitance-voltage measurements as well as a 1200× reduction in gate leakage current. A high-power magnetron plasma source produces a much higher energetic ion and vacuum ultra-violet (VUV) photon flux to the wafer compared to a low-power inductively coupled PE-ALD source. The ion and VUV photons produce defect states in the bulk of the gate oxide as well as at the oxide-silicon interface, causing higher leakage and potential reliability degradation.

  15. Structural and optical properties of titanium dioxide films deposited by reactive magnetron sputtering in pure oxygen plasma

    International Nuclear Information System (INIS)

    Asanuma, T.; Matsutani, T.; Liu, C.; Mihara, T.; Kiuchi, M.

    2004-01-01

    Titanium dioxide (TiO 2 ) thin films were deposited on unheated quartz (SiO 2 ) substrates in 'pure oxygen' plasma by reactive radio-frequency (rf) magnetron sputtering. The structural and optical properties of deposited films were systematically studied by changing the deposition parameters, and it was very recently found that crystalline TiO 2 films grew effectively in pure O 2 atmosphere. For TiO 2 films deposited at a rf power P rf of 200 W, x-ray diffraction patterns show the following features: (a) no diffraction peak was observed at a total sputtering pressure p tot of 1.3 Pa; (b) rutile (110) diffraction was observed at 4.0 Pa, (c) the dominant diffraction was from anatase (101) planes, with additional diffraction from (200), under p tot between 6.7 and 13 Pa. For the deposition at 140 W, however, crystalline films with mixed phases were observed only between 4.0 and 6.7 Pa. The peaks of both the deposition rate and the anatase weight ratio for the films produced at 140 W were found at p tot of approximately 6.7 Pa. This suggests that the nucleation and growth of TiO 2 films were affected by the composition, density, and kinetic energy of the particles impinging on the substrate surface. The optical absorption edge analysis showed that the optical band gap E g and the constant B could sensitively detect the film growth behavior, and determine the film structure and optical absorption. The change in the shape of the fundamental absorption edge is considered to reflect the variation of density and the short-range structural modifications

  16. Atomic and plasma-material interaction data for fusion. V. 7, part B. Particle induced erosion of Be, C and W in fusion plasmas. Part B: Physical sputtering and radiation-enhanced sublimation

    International Nuclear Information System (INIS)

    Eckstein, W.; Stephens, J.A.; Clark, R.E.H.; Davis, J.W.; Haasz, A.A.; Vietzke, E.; Hirooka, Y.

    2001-01-01

    The present volume of Atomic and Plasma-Material Interaction Data for Fusion is devoted to a critical review of the physical sputtering and radiation enhanced sublimation (RES) behaviour of fusion plasma-facing materials, in particular carbon, beryllium and tungsten. The present volume is intended to provide fusion reactor designers a detailed survey and parameterization of existing, critically assessed data for the chemical erosion of plasma-facing materials by particle impact. The survey and data compilation is presented for a variety of materials containing the elements C, Be and W (including dopants in carbon materials) and impacting plasma species. The dependencies of physical sputtering and RES yields on the material temperature, incident projectile energy, and incident flux are considered. The main data compilation is presented as separate data sheets indicating the material, impacting plasma species, experimental conditions, and parameterizations in terms of analytic functions

  17. Influence of Substrate Biasing on (Ba,Sr)TiO3 Films Prepared by Electron Cyclotron Resonance Plasma Sputtering

    Science.gov (United States)

    Matsumoto, Takeshi; Niino, Atsushi; Ohtsu, Yasunori; Misawa, Tatsuya; Yonesu, Akira; Fujita, Hiroharu; Miyake, Shoji

    2004-03-01

    (Ba,Sr)TiO3 (BST) films were deposited by electron cyclotron resonance (ECR) plasma sputtering with mirror confinement. DC bias voltage was applied to Pt/Ti/SiO2/Si substrates during deposition to vary the intensity of bombardment of energetic ions and to modify film properties. BST films deposited on the substrates at floating potential (approximately +20 V) were found to be amorphous, while films deposited on +40 V-biased substrates were crystalline in spite of a low substrate temperature below 648 K. In addition, atomic diffusion, which causes deterioration in the electrical properties of the films, was hardly observed in the crystallized films deposited with +40 V bias perhaps due to the low substrate temperature. Plasma diagnoses revealed that application of a positive bias to the substrate reduced the energy of ion bombardment and increased the density of excited neutral particles, which was assumed to result in the promotion of chemical reactions during deposition and the crystallization of BST films at a low temperature.

  18. Preparation of Ag-containing diamond-like carbon films on the interior surface of tubes by a combined method of plasma source ion implantation and DC sputtering

    Science.gov (United States)

    Hatada, R.; Flege, S.; Bobrich, A.; Ensinger, W.; Dietz, C.; Baba, K.; Sawase, T.; Watamoto, T.; Matsutani, T.

    2014-08-01

    Adhesive diamond-like carbon (DLC) films can be prepared by plasma source ion implantation (PSII), which is also suitable for the treatment of the inner surface of a tube. Incorporation of a metal into the DLC film provides a possibility to change the characteristics of the DLC film. One source for the metal is DC sputtering. In this study PSII and DC sputtering were combined to prepare DLC films containing low concentrations of Ag on the interior surfaces of stainless steel tubes. A DLC film was deposited using a C2H4 plasma with the help of an auxiliary electrode inside of the tube. This electrode was then used as a target for the DC sputtering. A mixture of the gases Ar and C2H4 was used to sputter the silver. By changing the gas flow ratios and process time, the resulting Ag content of the films could be varied. Sample characterizations were performed by X-ray photoelectron spectroscopy, secondary ion mass spectrometry, atomic force microscopy and Raman spectroscopy. Additionally, a ball-on-disk test was performed to investigate the tribological properties of the films. The antibacterial activity was determined using Staphylococcus aureus bacteria.

  19. Note: Easy-to-maintain electron cyclotron resonance (ECR) plasma sputtering apparatus featuring hybrid waveguide and coaxial cables for microwave delivery

    Energy Technology Data Exchange (ETDEWEB)

    Akazawa, Housei, E-mail: akazawa.housei@lab.ntt.co.jp [NTT Device Innovation Center, Morinosato Wakamiya, Atsugi, Kanagawa 243-0198 (Japan)

    2016-06-15

    The branched-waveguide electron cyclotron resonance plasma sputtering apparatus places quartz windows for transmitting microwaves into the plasma source not in the line of sight of the target. However, the quartz windows must be replaced after some time of operation. For maintenance, the loop waveguide branching from the T-junction must be dismounted and re-assembled accurately, which is a time-consuming job. We investigated substituting the waveguide branches with two sets of coaxial cables and waveguide/coaxial cable converters to simplify assembly as far as connection and disconnection go. The resulting hybrid system worked well for the purposes of plasma generation and film deposition.

  20. Note: Easy-to-maintain electron cyclotron resonance (ECR) plasma sputtering apparatus featuring hybrid waveguide and coaxial cables for microwave delivery

    Science.gov (United States)

    Akazawa, Housei

    2016-06-01

    The branched-waveguide electron cyclotron resonance plasma sputtering apparatus places quartz windows for transmitting microwaves into the plasma source not in the line of sight of the target. However, the quartz windows must be replaced after some time of operation. For maintenance, the loop waveguide branching from the T-junction must be dismounted and re-assembled accurately, which is a time-consuming job. We investigated substituting the waveguide branches with two sets of coaxial cables and waveguide/coaxial cable converters to simplify assembly as far as connection and disconnection go. The resulting hybrid system worked well for the purposes of plasma generation and film deposition.

  1. Measurement and modeling of plasma parameters in reactive high-power impulse magnetron sputtering of Ti in Ar/O.sub.2./sub. mixtures

    Czech Academy of Sciences Publication Activity Database

    Čada, Martin; Lundin, D.; Hubička, Zdeněk

    2017-01-01

    Roč. 121, č. 17 (2017), s. 1-7, č. článku 171913. ISSN 0021-8979 R&D Projects: GA ČR(CZ) GA15-00863S EU Projects: European Commission(XE) 608800 - HIPPOCAMP Institutional support: RVO:68378271 Keywords : reactive sputtering * HiPIMS * Langmuir probe * R-IRM model * plasma density * electron temperature Subject RIV: BL - Plasma and Gas Discharge Physics OBOR OECD: Fluids and plasma physics (including surface physics) Impact factor: 2.068, year: 2016

  2. Study of sterilization-treatment in pure and N- doped carbon thin films synthesized by inductively coupled plasma assisted pulsed-DC magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Javid, Amjed [Center for Advanced Plasma Surface Technology (CAPST), NU-SKKU Joint Institute for Plasma Nano-Materials (IPNM), Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Department of Textile Processing, National Textile University, Faisalabad 37610 (Pakistan); Kumar, Manish, E-mail: manishk@skku.edu [Center for Advanced Plasma Surface Technology (CAPST), NU-SKKU Joint Institute for Plasma Nano-Materials (IPNM), Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Han, Jeon Geon, E-mail: hanjg@skku.edu [Center for Advanced Plasma Surface Technology (CAPST), NU-SKKU Joint Institute for Plasma Nano-Materials (IPNM), Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

    2017-01-15

    Highlights: • Pure and N-doped nanocrystallie carbon films are synthesized by ICP assisted pulsed DC plasma process. • ICP power induces the increase in average graphitic crystallite size from 4.86 nm to 6.42 nm. • Beneficial role of ICP source assistance to achieve high sputtering throughput (deposition rate ∼55 nm/min). • Post-sterilization electron-transport study shows N-doped carbon films having promising stability. - Abstract: Electrically-conductive nanocrystalline carbon films, having non-toxic and non-immunogenic characteristics, are promising candidates for reusable medical devices. Here, the pure and N- doped nanocrystalline carbon films are deposited by the assistance of inductively coupled plasma (ICP) in an unbalanced facing target pulsed-DC magnetron sputtering process. Through the optical emission spectroscopy study, the role of ICP assistance and N-doping on the reactive components/radicals during the synthesis is presented. The N-doping enhances the three fold bonding configurations by increasing the ionization and energies of the plasma species. Whereas, the ICP addition increases the plasma density to control the deposition rate and film structure. As a result, sputtering-throughput (deposition rate: 31–55 nm/min), electrical resistivity (4–72 Ωcm) and water contact angle (45.12°–54°) are significantly tailored. Electric transport study across the surface microchannel confirms the superiority of N-doped carbon films for sterilization stability over the undoped carbon films.

  3. Geometric considerations in magnetron sputtering

    International Nuclear Information System (INIS)

    Thornton, J.A.

    1982-01-01

    The recent development of high performance magnetron type discharge sources has greatly enhaced the range of coating applications where sputtering is a viable deposition process. Magnetron sources can provide high current densities and sputtering rates, even at low pressures. They have much reduced substrate heating rates and can be scaled to large sizes. Magnetron sputter coating apparatuses can have a variety of geometric and plasma configurations. The target geometry affects the emission directions of both the sputtered atoms and the energetic ions which are neutralized and reflected at the cathode. This fact, coupled with the long mean free particle paths which are prevalent at low pressures, can make the coating properties very dependent on the apparatus geometry. This paper reviews the physics of magnetron operation and discusses the influences of apparatus geometry on the use of magnetrons for rf sputtering and reactive sputtering, as well as on the microstructure and internal stresses in sputtered metallic coatings. (author) [pt

  4. A global plasma model for reactive deposition of compound films by modulated pulsed power magnetron sputtering discharges

    Science.gov (United States)

    Zheng, B. C.; Wu, Z. L.; Wu, B.; Li, Y. G.; Lei, M. K.

    2017-05-01

    A spatially averaged, time-dependent global plasma model has been developed to describe the reactive deposition of a TiAlSiN thin film by modulated pulsed power magnetron sputtering (MPPMS) discharges in Ar/N2 mixture gas, based on the particle balance and the energy balance in the ionization region, and considering the formation and erosion of the compound at the target surface. The modeling results show that, with increasing the N2 partial pressure from 0% to 40% at a constant working pressure of 0.3 Pa, the electron temperature during the strongly ionized period increases from 4 to 7 eV and the effective power transfer coefficient, which represents the power fraction that effectively heats the electrons and maintains the discharge, increases from about 4% to 7%; with increasing the working pressure from 0.1 to 0.7 Pa at a constant N2 partial pressure of 25%, the electron temperature decreases from 10 to 4 eV and the effective power transfer coefficient decreases from 8% to 5%. Using the modeled plasma parameters to evaluate the kinetic energy of arriving ions, the ion-to-neutral flux ratio of deposited species, and the substrate heating, the variations of process parameters that increase these values lead to an enhanced adatom mobility at the target surface and an increased input energy to the substrate, corresponding to the experimental observation of surface roughness reduction, the microstructure transition from the columnar structure to the dense featureless structure, and the enhancement of phase separation. At higher N2 partial pressure or lower working pressure, the modeling results demonstrate an increase in electron temperature, which shifts the discharge balance of Ti species from Ti+ to Ti2+ and results in a higher return fraction of Ti species, corresponding to the higher Al/Ti ratio of deposited films at these conditions. The modeling results are well correlated with the experimental observation of the composition variation and the microstructure

  5. Composite SiO.sub.x./sub./hydrocarbon plasma polymer films prepared by RF magnetron sputtering of SiO.sub.2./sub. and polyethylene or polypropylene

    Czech Academy of Sciences Publication Activity Database

    Pihosh, Y.; Biederman, H.; Slavínská, D.; Kousal, J.; Choukourov, A.; Trchová, Miroslava; Macková, Anna; Boldyryeva, Hanna

    2006-01-01

    Roč. 81, 1-4 (2006), s. 32-37 ISSN 0042-207X R&D Projects: GA MŠk 1P05ME754 Institutional research plan: CEZ:AV0Z40500505; CEZ:AV0Z10480505 Keywords : composite films * magnetron * sputtering Subject RIV: BL - Plasma and Gas Discharge Physics Impact factor: 0.834, year: 2006

  6. Composite SiOx/fluorocarbon plasma polymer films prepared by r.f. magnetron sputtering of SiO2 and PTFE

    Czech Academy of Sciences Publication Activity Database

    Pihosh, Y.; Biederman, H.; Slavínská, D.; Kousal, J.; Choukourov, A.; Trchová, Miroslava; Macková, Anna; Boldyryeva, Hanna

    2006-01-01

    Roč. 81, 1-4 (2006), s. 38-44 ISSN 0042-207X R&D Projects: GA MŠk OC 527.10; GA MŠk ME 553 Institutional research plan: CEZ:AV0Z40500505; CEZ:AV0Z10480505 Keywords : composite films * magnetron * sputtering Subject RIV: BL - Plasma and Gas Discharge Physics Impact factor: 0.834, year: 2006

  7. Deposition of coatings on Ti by sputtering of tableted carbonate-hydroxylapatite in HF discharge plasma

    International Nuclear Information System (INIS)

    Khamchukov, Y.D.; Klubovich, V.; Potapenko, I.

    2001-01-01

    The coatings of carbonate-hydroxyapatite (CHA) on materials suitable for implants must have, because of their shielding functions, sufficiently large thickness and good adhesion. For these reasons, the production of these coatings is a technological task whose solution may be obtained on the basis of the application of different ion-plasma technologies. Examination of the properties of the CHA coatings on the substrate of titanium and the effect on the materials of the coating and the substrate of ion-plasma technology with the application of high-frequency discharge was the aim of this investigation

  8. Ionization of sputtered Ti, Al, and C coupled with plasma characterization in HiPIMS

    Czech Academy of Sciences Publication Activity Database

    Lundin, D.; Čada, Martin; Hubička, Zdeněk

    2015-01-01

    Roč. 24, č. 3 (2015), s. 035018 ISSN 0963-0252 R&D Projects: GA MŠk LH12043 EU Projects: European Commission(XE) 608800 - HIPPOCAMP Institutional support: RVO:68378271 Keywords : IPVD * HiPIMS * HPPMS * Langmuir probe * ion meter Subject RIV: BL - Plasma and Gas Discharge Physics Impact factor: 2.808, year: 2015

  9. Bright and photostable push-pull pyrene dye visualizes lipid order variation between plasma and intracellular membranes.

    Science.gov (United States)

    Niko, Yosuke; Didier, Pascal; Mely, Yves; Konishi, Gen-ichi; Klymchenko, Andrey S

    2016-01-11

    Imaging lipid organization in cell membranes requires advanced fluorescent probes. Here, we show that a recently synthesized push-pull pyrene (PA), similarly to popular probe Laurdan, changes the emission maximum as a function of lipid order, but outperforms it by spectroscopic properties. In addition to red-shifted absorption compatible with common 405 nm diode laser, PA shows higher brightness and much higher photostability than Laurdan in apolar membrane environments. Moreover, PA is compatible with two-photon excitation at wavelengths >800 nm, which was successfully used for ratiometric imaging of coexisting liquid ordered and disordered phases in giant unilamellar vesicles. Fluorescence confocal microscopy in Hela cells revealed that PA efficiently stains the plasma membrane and the intracellular membranes at >20-fold lower concentrations, as compared to Laurdan. Finally, ratiometric imaging using PA reveals variation of lipid order within different cellular compartments: plasma membranes are close to liquid ordered phase of model membranes composed of sphingomyelin and cholesterol, while intracellular membranes are much less ordered, matching well membranes composed of unsaturated phospholipids without cholesterol. These differences in the lipid order were confirmed by fluorescence lifetime imaging (FLIM) at the blue edge of PA emission band. PA probe constitutes thus a new powerful tool for biomembrane research.

  10. Relationship between plasma parameters and film microstructure in radio frequency magnetron sputter deposition of barium strontium titanate

    Science.gov (United States)

    Panda, B.; Dhar, A.; Nigam, G. D.; Bhattacharya, D.; Ray, S. K.

    1998-01-01

    Radio frequency magnetron sputtered Ba0.8Sr0.2TiO3 thin films have been deposited on silicon and Si/SiO2/SiN/Pt substrates. The analysis of plasma discharge has been carried out using the Langmuir probe technique. Both the pressure and power have been found to influence the ion density and self-bias of the target. Introduction of oxygen into the discharge effectively decreases the ion density. The structural and electrical properties have been investigated using x-ray diffraction, atomic force microscopy of deposited films and capacitance-voltage, conductance-voltage, and current density-electric field characteristics of fabricated capacitors. The growth and orientation of the films have been found to depend upon the type of substrates and deposition temperatures. The texture in the film is promoted at a pressure 0.25 Torr with a moderately high value of ion density and low ion bombardment energy. Films deposited on Si/SiO2/SiN/Pt substrate have shown higher dielectric constant (191) and lower leakage current density (2.8×10-6 A/cm2 at 100 kV/cm) compared to that on silicon.

  11. A hybrid heterojunction with reverse rectifying characteristics fabricated by magnetron sputtered TiOx and plasma polymerized aniline structure

    International Nuclear Information System (INIS)

    Sarma, Bimal K; Pal, Arup R; Bailung, Heremba; Chutia, Joyanti

    2012-01-01

    A TiO x film produced by direct current reactive magnetron sputtering without substrate heating or post-deposition annealing and a plasma polymerized aniline (PPA) structure deposited in the same reactor by a radio-frequency glow discharge without the assistance of a carrier gas are used for the fabrication of a heterojunction. The gas phase discharge is investigated by a Langmuir probe and optical emission spectroscopy. The individual layers and the heterojunction are characterized for structural and optoelectronic properties. PPA has polymer-like structure and texture and is characterized by saturated-unsaturated, branched and crosslinked networks. X-ray photoelectron spectroscopy reveals a slightly reduced TiO x surface, which exhibits near band edge luminescence. The free radicals trapped in PPA readily react with oxygen when exposed to atmosphere. The heterojunction shows reverse rectifying characteristics under dark and ultraviolet (UV) irradiation. The energy levels of TiO x and PPA might exhibit reverse band bending and electrons and holes are accumulated on both sides of the heterojunction. The charge accumulation phenomena at the interface may play a key role in the device performance of a hybrid heterojunction. The current-voltage characteristic of the heterojunction is sensitive to UV light, so the structure may be used for photo-sensing applications. (paper)

  12. Effects of a two-hour early awakening and of bright light exposure on plasma patterns of cortisol, melatonin, prolactin and testosterone in man.

    Science.gov (United States)

    Touitou, Y; Benoit, O; Foret, J; Aguirre, A; Bogdan, A; Clodoré, M; Touitou, C

    1992-03-01

    Bright light is a synchronizing agent that entrains human circadian rhythms and modifies various endocrine and neuroendocrine functions. The aim of the present study was to determine whether and how the exposure to a bright light stimulus during the 2 h following a 2 h earlier awakening could modify the disturbance induced by the the sleep deprivation on the plasma patterns of hormones whose secretion is sensitive to light and/or sleep, namely melatonin, prolactin, cortisol and testosterone. Six healthy and synchronized (lights on: 07.00-23.00) male students (22.5 +/- 1.1 years) with normal psychological profiles volunteered for the study in winter. The protocol consisted of a baseline control night (customary sleep schedule) followed by three shortened nights with a rising at 05.00 and a 2 h exposure to either dim light (50 lux; one week) or bright light (2000 lux; other week). Our study showed a phase advance of the circadian rhythm of plasma cortisol without significant modifications of the hormone mean or peak concentration. Plasma melatonin concentration decreased following bright light exposure, whereas no obvious modifications of plasma testosterone or prolactin patterns could be observed in this protocol.

  13. Vehicle exhaust gas clearance by low temperature plasma-driven nano-titanium dioxide film prepared by radiofrequency magnetron sputtering.

    Directory of Open Access Journals (Sweden)

    Shuang Yu

    Full Text Available A novel plasma-driven catalysis (PDC reactor with special structure was proposed to remove vehicle exhaust gas. The PDC reactor which consisted of three quartz tubes and two copper electrodes was a coaxial dielectric barrier discharge (DBD reactor. The inner and outer electrodes firmly surrounded the outer surface of the corresponding dielectric barrier layer in a spiral way, respectively. Nano-titanium dioxide (TiO2 film prepared by radiofrequency (RF magnetron sputtering was coated on the outer wall of the middle quartz tube, separating the catalyst from the high voltage electrode. The spiral electrodes were designed to avoid overheating of microdischarges inside the PDC reactor. Continuous operation tests indicated that stable performance without deterioration of catalytic activity could last for more than 25 h. To verify the effectiveness of the PDC reactor, a non-thermal plasma(NTP reactor was employed, which has the same structure as the PDC reactor but without the catalyst. The real vehicle exhaust gas was introduced into the PDC reactor and NTP reactor, respectively. After the treatment, compared with the result from NTP, the concentration of HC in the vehicle exhaust gas treated by PDC reactor reduced far more obviously while that of NO decreased only a little. Moreover, this result was explained through optical emission spectrum. The O emission lines can be observed between 870 nm and 960 nm for wavelength in PDC reactor. Together with previous studies, it could be hypothesized that O derived from catalytically O3 destruction by catalyst might make a significant contribution to the much higher HC removal efficiency by PDC reactor. A series of complex chemical reactions caused by the multi-components mixture in real vehicle exhaust reduced NO removal efficiency. A controllable system with a real-time feedback module for the PDC reactor was proposed to further improve the ability of removing real vehicle exhaust gas.

  14. Nano-structuring of PTFE surface by plasma treatment, etching, and sputtering with gold

    Czech Academy of Sciences Publication Activity Database

    Reznickova, A.; Kolská, Z.; Hnatowicz, Vladimír; Svorcik, V.

    2011-01-01

    Roč. 13, č. 7 (2011), s. 2929-2938 ISSN 1388-0764 R&D Projects: GA ČR GA106/09/0125; GA MŠk(CZ) LC06041 Institutional research plan: CEZ:AV0Z10480505 Keywords : ARGON PLASMA * POLYMER-FILMS * POLYETHYLENE * DISCHARGE * POLYETHYLENETEREPHTHALATE Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 3.287, year: 2011

  15. Characterization and modelling of microwave multi dipole plasmas. Application to multi dipolar plasma assisted sputtering; Caracterization et modelisation des plasmas micro-onde multi-dipolaires. Application a la pulverisation assistee par plasma multi-dipolaire

    Energy Technology Data Exchange (ETDEWEB)

    Tran, Tan Vinh [Universite Joseph Fourier/CNRS-IN2P3, 53 Avenue des Martyrs, F-38026 Grenoble (France)

    2006-07-01

    the magnet has also shown a better radial confinement with magnets exhibiting high length over diameter ratios. In addition, the numerical study corroborates the results of the experimental study, i.e. an ECR coupling region close to the equatorial plane of the magnet and not near the end of the coaxial microwave line. Finally, these results have been successfully applied to plasma assisted sputtering of targets allowing, in particular, their uniform erosion. (author)

  16. Synthesis and characterization of Al2O3 and SiO2 films with fluoropolymer content using rf-plasma magnetron sputtering technique

    International Nuclear Information System (INIS)

    Islam, Mohammad; Inal, Osman T.

    2008-01-01

    Pure and molecularly mixed inorganic films for protection against atomic oxygen in lower earth orbit were prepared using radio-frequency (rf) plasma magnetron sputtering technique. Alumina (Al 2 O 3 ) and silica (SiO 2 ) films with average grain size in the range of 30-80 nm and fully dense or dense columnar structure were synthesized under different conditions of pressure and power. Simultaneous oxide sputtering and plasma polymerization (PP) of hexafluoropropylene (HFP) led to the formation of molecularly mixed films with fluoropolymer content. The degree of plasma polymerization was strongly influenced by total chamber pressure and the argon to HFP molar ratio (n Ar /n M ). An order of magnitude increase in pressure due to argon during codeposition changed the plasma-polymerization mechanism from radical-chain- to radical-radical-type processes. Subsequently, a shift from linear CH 2 group based chain polymerization to highly disordered fluoropolymer content with branching and cross-linking was observed. Fourier transform infrared spectroscopy studies revealed chemical interaction between depositing SiO 2 and PP-HFP through appearance of absorption bands characteristic of Si-F stretching and expansion of SiO 2 network. The relative amount and composition of plasma-polymerized fluoropolymer in such films can be controlled by changing argon to HFP flow ratio, total chamber pressure, and applied power. These films offer great potential for use as protective coatings in aerospace applications

  17. Nanostructured plasma etched, magnetron sputtered nanolaminar Cr2AlC MAX phase thin films

    International Nuclear Information System (INIS)

    Grieseler, Rolf; Hähnlein, Bernd; Stubenrauch, Mike; Kups, Thomas; Wilke, Marcus; Hopfeld, Marcus; Pezoldt, Jörg; Schaaf, Peter

    2014-01-01

    The knowledge of the mechanical properties of new materials determines essentially their usability and functionality when used in micro- and nanostructures. MAX phases are new and highly interesting materials due to their unique combination of materials properties. In this article a new method for producing the Cr 2 AlC MAX phase is presented. Thin film elemental multilayer deposition and subsequent rapid thermal annealing forms the MAX phase within seconds. Additionally, free standing microstructures (beams and cantilevers) based on this MAX phase films are prepared by plasma etching. The mechanical properties of these MAX phase microstructures are investigated

  18. Sputtered catalysts

    International Nuclear Information System (INIS)

    Tyerman, W.J.R.

    1978-01-01

    A method is described for preparing a supported catalyst by a sputtering process. A material that is catalytic, or which is a component of a catalytic system, is sputtered on to the surface of refractory oxide particles that are compatible with the sputtered material and the sputtered particles are consolidated into aggregate form. The oxide particles before sputtering should have a diameter in the range 1000A to 50μ and a porosity less than 0.4 ml/g, and may comprise MgO, Al 2 O 3 or SiO 2 or mixtures of these oxides, including hydraulic cement. The particles may possess catalytic activity by themselves or in combination with the catalytic material deposited on them. Sputtering may be effected epitaxially and consolidation may be effected by compaction pelleting, extrusion or spray drying of a slurry. Examples of the use of such catalysts are given. (U.K.)

  19. Plasma Sputtering Robotic Device for In-Situ Thick Coatings of Long, Small Diameter Vacuum Tubes

    Science.gov (United States)

    Hershcovitch, Ady

    2014-10-01

    A novel robotic plasma magnetron mole with a 50 cm long cathode was designed fabricated & operated. Reason for this endeavor is to alleviate the problems of unacceptable ohmic heating of stainless steel vacuum tubes and of electron clouds, due to high secondary electron yield (SEY), in the BNL Relativistic Heavy Ion Collider (RHIC). The magnetron mole was successfully operated to copper coat an assembly containing a full-size, stainless steel, cold bore, RHIC magnet tubing connected to two types of RHIC bellows, to which two additional pipes made of RHIC tubing were connected. To increase cathode lifetime, movable magnet package was developed, and thickest possible cathode was made, with a rather challenging target to substrate (de facto anode) distance of less than 1.5 cm. Achieving reliable steady state magnetron discharges at such a short cathode to anode gap was rather challenging, when compared to commercial coating equipment, where the target to substrate distance is 10's cm; 6.3 cm is the lowest experimental target to substrate distance found in the literature. Additionally, the magnetron developed during this project provides unique omni-directional uniform coating. The magnetron is mounted on a carriage with spring loaded wheels that successfully crossed bellows and adjusted for variations in vacuum tube diameter, while keeping the magnetron centered. Electrical power and cooling water were fed through a cable bundle. The umbilical cabling system is driven by a motorized spool. Excellent coating adhesion was achieved. Measurements indicated that well-scrubbed copper coating reduced SEY to 1, i.e., the problem of electron clouds can be eliminated. Room temperature RF resistivity measurement indicated that 10 μm Cu coated stainless steel RHIC tube has conductivity close to that of pure copper tubing. Excellent coating adhesion was achieved. Device detail and experimental results will be presented. Work supported by Brookhaven Science Associates, LLC under

  20. Plasma sputtering robotic device for in-situ thick coatings of long, small diameter vacuum tubesa)

    Science.gov (United States)

    Hershcovitch, A.; Blaskiewicz, M.; Brennan, J. M.; Custer, A.; Dingus, A.; Erickson, M.; Fischer, W.; Jamshidi, N.; Laping, R.; Liaw, C.-J.; Meng, W.; Poole, H. J.; Todd, R.

    2015-05-01

    A novel robotic plasma magnetron mole with a 50 cm long cathode was designed, fabricated, and operated. The reason for this endeavor is to alleviate the problems of unacceptable resistive heating of stainless steel vacuum tubes in the BNL Relativistic Heavy Ion Collider (RHIC). The magnetron mole was successfully operated to copper coat an assembly containing a full-size, stainless steel, cold bore, RHIC magnet tubing connected to two types of RHIC bellows, to which two additional pipes made of RHIC tubing were connected. To increase the cathode lifetime, a movable magnet package was developed, and the thickest possible cathode was made, with a rather challenging target to substrate (de facto anode) distance of less than 1.5 cm. Achieving reliable steady state magnetron discharges at such a short cathode to anode gap was rather challenging, when compared to commercial coating equipment, where the target to substrate distance is 10's cm; 6.3 cm is the lowest experimental target to substrate distance found in the literature. Additionally, the magnetron developed during this project provides unique omni-directional uniform coating. The magnetron is mounted on a carriage with spring loaded wheels that successfully crossed bellows and adjusted for variations in vacuum tube diameter, while keeping the magnetron centered. Electrical power and cooling water were fed through a cable bundle. The umbilical cabling system is driven by a motorized spool. Excellent coating adhesion was achieved. Measurements indicated that well-scrubbed copper coating reduced secondary electron yield to 1, i.e., the problem of electron clouds can be eliminated. Room temperature RF resistivity measurement indicated that a 10 μm copper coated stainless steel RHIC tube has a conductivity close to that of pure copper tubing. Excellent coating adhesion was achieved. The device details and experimental results are described.

  1. Plasma sputtering robotic device for in-situ thick coatings of long, small diameter vacuum tubes

    Energy Technology Data Exchange (ETDEWEB)

    Hershcovitch, A., E-mail: hershcovitch@bnl.gov; Blaskiewicz, M.; Brennan, J. M.; Fischer, W.; Liaw, C.-J.; Meng, W.; Todd, R. [Brookhaven National Laboratory, Upton, New York 11973 (United States); Custer, A.; Dingus, A.; Erickson, M.; Jamshidi, N.; Laping, R.; Poole, H. J. [PVI, Oxnard, California 93031 (United States)

    2015-05-15

    A novel robotic plasma magnetron mole with a 50 cm long cathode was designed, fabricated, and operated. The reason for this endeavor is to alleviate the problems of unacceptable resistive heating of stainless steel vacuum tubes in the BNL Relativistic Heavy Ion Collider (RHIC). The magnetron mole was successfully operated to copper coat an assembly containing a full-size, stainless steel, cold bore, RHIC magnet tubing connected to two types of RHIC bellows, to which two additional pipes made of RHIC tubing were connected. To increase the cathode lifetime, a movable magnet package was developed, and the thickest possible cathode was made, with a rather challenging target to substrate (de facto anode) distance of less than 1.5 cm. Achieving reliable steady state magnetron discharges at such a short cathode to anode gap was rather challenging, when compared to commercial coating equipment, where the target to substrate distance is 10's cm; 6.3 cm is the lowest experimental target to substrate distance found in the literature. Additionally, the magnetron developed during this project provides unique omni-directional uniform coating. The magnetron is mounted on a carriage with spring loaded wheels that successfully crossed bellows and adjusted for variations in vacuum tube diameter, while keeping the magnetron centered. Electrical power and cooling water were fed through a cable bundle. The umbilical cabling system is driven by a motorized spool. Excellent coating adhesion was achieved. Measurements indicated that well-scrubbed copper coating reduced secondary electron yield to 1, i.e., the problem of electron clouds can be eliminated. Room temperature RF resistivity measurement indicated that a 10 μm copper coated stainless steel RHIC tube has a conductivity close to that of pure copper tubing. Excellent coating adhesion was achieved. The device details and experimental results are described.

  2. Spatially resolved electron density and electron energy distribution function in Ar magnetron plasmas used for sputter-deposition of ZnO-based thin films

    Energy Technology Data Exchange (ETDEWEB)

    Maaloul, L.; Gangwar, R. K.; Morel, S.; Stafford, L., E-mail: luc.stafford@umontreal.ca [Département de Physique, Université de Montréal, Montréal, Québec H3C 3J7 (Canada)

    2015-11-15

    Langmuir probe and trace rare gases optical emission spectroscopy were used to analyze the spatial structure of the electron density and electron energy distribution function (EEDF) in a cylindrical Ar magnetron plasma reactor used for sputter-deposition of ZnO-based thin films. While a typical Bessel (zero order) diffusion profile was observed along the radial direction for the number density of charged particles at 21 cm from the ZnO target, a significant rise of these populations with respect to the Bessel function was seen in the center of the reactor at 4 cm from the magnetron surface. As for the EEDF, it was found to transform from a more or less Maxwellian far from the target to a two-temperature Maxwellian with a depletion of high-energy electrons where magnetic field confinement effects become important. No significant change in the behavior of the electron density and EEDF across a wide range of pressures (5–100 mTorr) and self-bias voltages (115–300 V) was observed during magnetron sputtering of Zn, ZnO, and In{sub 2}O{sub 3} targets. This indicates that sputtering of Zn, In, and O atoms do not play a very significant role on the electron particle balance and electron heating dynamics, at least over the range of experimental conditions investigated.

  3. Niobium-based catalysts prepared by reactive radio-frequency magnetron sputtering and arc plasma methods as non-noble metal cathode catalysts for polymer electrolyte fuel cells

    International Nuclear Information System (INIS)

    Ohnishi, Ryohji; Katayama, Masao; Takanabe, Kazuhiro; Kubota, Jun; Domen, Kazunari

    2010-01-01

    Two vacuum methods, reactive radio-frequency (RF) magnetron sputtering and arc plasma deposition, were used to prepare niobium-based catalysts for an oxygen reduction reaction (ORR) as non-noble metal cathodes for polymer electrode fuel cells (PEFCs). Thin films with various N and O contents, denoted as NbO x and Nb-O-N, were prepared on glassy carbon plates by RF magnetron sputtering with controlled partial pressures of oxygen and nitrogen. Electrochemical measurements indicated that the introduction of the nitrogen species into the thin film resulted in improved ORR activity compared to the oxide-only film. Using an arc plasma method, niobium was deposited on highly oriented pyrolytic graphite (HOPG) substrates, and the sub-nanoscale surface morphology of the deposited particles was investigated using scanning tunneling microscopy (STM). To prepare practical cathode catalysts, niobium was deposited on carbon black (CB) powders by arc plasma method. STM and transmission electron microscopy observations of samples on HOPG and CB indicated that the prepared catalysts were highly dispersed at the atomic level. The onset potential of oxygen reduction on Nb-O-N/CB was 0.86 V vs. a reversible hydrogen electrode, and the apparent current density was drastically improved by the introduction of nitrogen.

  4. Cathode and ion-luminescence of Eu:ZnO thin films prepared by reactive magnetron sputtering and plasma decomposition of non-volatile precursors

    Energy Technology Data Exchange (ETDEWEB)

    Gil-Rostra, Jorge [Instituto de Ciencia de Materiales de Sevilla, CSIC, Univ. Sevilla, C/Américo Vespucio 49, E-41092 Sevilla (Spain); Ferrer, Francisco J. [Centro Nacional de Aceleradores, CSIC, Univ. Sevilla, Av. Thomas A. Edison 7, E-41092 Sevilla (Spain); Martín, Inocencio R. [Departamento de Física Fundamental y Experimental, Electrónica y Sistemas, U. La Laguna, C/Astrofísico Francisco Sánchez s/n, E-38206 La Laguna, Santa Cruz de Tenerife (Spain); González-Elipe, Agustín R.; Yubero, Francisco [Instituto de Ciencia de Materiales de Sevilla, CSIC, Univ. Sevilla, C/Américo Vespucio 49, E-41092 Sevilla (Spain)

    2016-10-15

    This paper reports the luminescent behavior of Eu:ZnO thin films prepared by an one-step procedure that combines reactive magnetron sputtering deposition of ZnO with the plasma activated decomposition of a non-volatile acetylacetonate precursor of Eu sublimated in an effusion cell. Chemical composition and microstructure of the Eu:ZnO thin films have been characterized by several methods and their photo-, cathode- and ion-luminescent properties studied as a function of Eu concentration. The high transparency and well controlled optical properties of the films have demonstrated to be ideal for the development of cathode- and ion- luminescence sensors.

  5. Plasma conditions generated by interaction of a high brightness, prepulse free Raman amplified KrF laser pulse with solid targets

    International Nuclear Information System (INIS)

    Riley, D.; Gizzi, L.A.; Khattak, F.Y.; Mackinnon, A.J.; Viana, S.M.; Willi, O.

    1992-01-01

    A high brightness, Raman amplified KrF laser has been used to irradiate solid targets with 12 ps laser pulses at intensities above 10 15 W/cm 2 without the presence of a preformed plasma caused by low level amplified spontaneous emission prepulse. Time-resolved x-ray spectroscopy of the K-shell emission from aluminum was used to infer electron densities in excess of 10 23 cm -3 at temperatures of several hundred electronvolts

  6. Electronic sputtering

    International Nuclear Information System (INIS)

    Johnson, R.E.

    1989-01-01

    Electronic sputtering covers a range of phenomena from electron and photon stimulated desorption from multilayers to fast heavy ion-induced desorption (sputtering) of biomolecules. In this talk the author attempted. Therefore, to connect the detailed studies of argon ejection from solid argon by MeV ions and keV electrons to the sputtering of low temperatures molecular ices by MeV ions then to biomolecule ejection from organic solids. These are related via changing (dE/dx) e , molecular size, and transport processes occurring in materials. In this regard three distinct regions of (dE/dx) e have been identified. Since the talk this picture has been made explicit using a simple spike model for individual impulsive events in which spike interactions are combined linearly. Since that time also the molecular dynamics programs (at Virginia and Uppsala) have quantified both single atom and dimer processes in solid Ar and the momentum transport in large biomolecule sputtering. 5 refs

  7. TiO2 thin and thick films grown on Si/glass by sputtering of titanium targets in an RF inductively coupled plasma

    International Nuclear Information System (INIS)

    Valencia-Alvarado, R; López-Callejas, R; Mercado-Cabrera, A; Peña-Eguiluz, R; Muñoz-Castro, A E; Rodríguez-Méndez, B G; De la Piedad-Beneitez, A; De la Rosa-Vázquez, J M

    2015-01-01

    TiO 2 thin and thick films were deposited on silicon/glass substrates using RF inductive plasma in continuous wave. The films thickness, as well as phases control, is achieved with a gradual increase in temperature substrates varying supplied RF power or working gas pressure besides deposition time as well. The deposition conditions were: argon 80%/oxygen 20% carefully calibrated mixture of 2 to 7×10 −2 mbar as working gas pressure range. Deposition time 0.5 to 5 hours, 500 or 600 W RF power at 13.56 MHz frequency and 242-345 °C substrates temperature range. The titanium dioxide deposited on the substrates is grown by sputtering of a titanium target negatively polarized at 3-5 kV DC situated 14 mm in front of such substrates. The plasma reactor is a simple Pyrex-like glass cylindrical vessel of 50 cm long and 20 cm in diameter. Using the before describe plasma parameters we obtained films only anatase and both anatase/rutile phases with stoichiometric different. The films were characterized by X-ray photoelectron spectroscopy (XPS), stylus profilometer, X-ray diffraction (XRD), scanning electron microscopy (SEM) and Raman spectroscopy. (paper)

  8. Synthesis of ZnO nanorods-Au nanoparticles hybrids via in-situ plasma sputtering-assisted method for simultaneous electrochemical sensing of ascorbic acid and uric acid

    Energy Technology Data Exchange (ETDEWEB)

    Hou, Chao [College of Life Information Science & Instrument Engineering, Hangzhou Dianzi University, Hangzhou 310018 (China); Liu, Hongying, E-mail: liuhongying@hdu.edu.cn [College of Life Information Science & Instrument Engineering, Hangzhou Dianzi University, Hangzhou 310018 (China); State Key Laboratory of Analytical Chemistry for Life Science, School of Chemistry & Chemical Engineering, Nanjing University, Nanjing 210093 (China); Zhang, Dan; Yang, Chi [Department of Pharmacy, Nantong University, Nantong 226001 (China); Zhang, Mingzhen [College of Life Information Science & Instrument Engineering, Hangzhou Dianzi University, Hangzhou 310018 (China)

    2016-05-05

    In this study, ZnO nanorods-Au nanoparticles (ZnO NRs-Au NPs) hybrids were prepared using an in-situ plasma sputtering-assisted method without any template. Characterization results from scanning electron microscopy, high-resolution transmission electron microscopy, and energy dispersive X-ray spectroscopy showed that Au NPs are highly dispersed and tightly anchored on the surface of ZnO NRs. The size and surface coverage of Au NPs were well controlled by plasma sputtering time. Moreover, the hybrids exhibited excellent electrocatalytic properties towards oxidation of ascorbic acid (AA) and uric acid (UA) due to large surface area of Au NPs and ZnO NRs, and thus can be used as electrochemical sensors. Differential pulse voltammetry results showed that AA and UA could be detected simultaneously by ZnO NRs-Au NPs hybrids modified glassy carbon electrode. The linear ranges for AA and UA are 0.1 to 4 mM and 0.01 to 0.4 mM, respectively. The results suggest promising future applications in clinical diagnosis. - Highlights: • ZnO nanorods-Au nanoparticles were synthesized by in-situ plasma sputtering method. • Influence of sputtering time on the formation of Au nanoparticles was studied. • It exhibited a strong electrocatalytic activity toward the oxidation of ascorbic acid and uric acid. • A portable and cheap approach for simultaneous detection of ascorbic acid and uric acid was developed.

  9. Synthesis of ZnO nanorods-Au nanoparticles hybrids via in-situ plasma sputtering-assisted method for simultaneous electrochemical sensing of ascorbic acid and uric acid

    International Nuclear Information System (INIS)

    Hou, Chao; Liu, Hongying; Zhang, Dan; Yang, Chi; Zhang, Mingzhen

    2016-01-01

    In this study, ZnO nanorods-Au nanoparticles (ZnO NRs-Au NPs) hybrids were prepared using an in-situ plasma sputtering-assisted method without any template. Characterization results from scanning electron microscopy, high-resolution transmission electron microscopy, and energy dispersive X-ray spectroscopy showed that Au NPs are highly dispersed and tightly anchored on the surface of ZnO NRs. The size and surface coverage of Au NPs were well controlled by plasma sputtering time. Moreover, the hybrids exhibited excellent electrocatalytic properties towards oxidation of ascorbic acid (AA) and uric acid (UA) due to large surface area of Au NPs and ZnO NRs, and thus can be used as electrochemical sensors. Differential pulse voltammetry results showed that AA and UA could be detected simultaneously by ZnO NRs-Au NPs hybrids modified glassy carbon electrode. The linear ranges for AA and UA are 0.1 to 4 mM and 0.01 to 0.4 mM, respectively. The results suggest promising future applications in clinical diagnosis. - Highlights: • ZnO nanorods-Au nanoparticles were synthesized by in-situ plasma sputtering method. • Influence of sputtering time on the formation of Au nanoparticles was studied. • It exhibited a strong electrocatalytic activity toward the oxidation of ascorbic acid and uric acid. • A portable and cheap approach for simultaneous detection of ascorbic acid and uric acid was developed.

  10. Nonlinear Dynamics of High-Brightness Electron Beams and Beam-Plasma Interactions: Theories, Simulations, and Experiments

    International Nuclear Information System (INIS)

    Bohn, C.L.; Piot, P.; Erdelyi, B.

    2008-01-01

    According to its original Statement of Work (SOW), the overarching objective of this project is: 'To enhance substantially the understanding of the fundamental dynamics of nonequilibrium high-brightness beams with space charge.' Our work and results over the past three and half years have been both intense and fruitful. Inasmuch as this project is inextricably linked to a larger, growing research program - that of the Beam Physics and Astrophysics Group (BPAG) - the progress that it has made possible cannot easily be separated from the global picture. Thus, this summary report includes major sections on 'global' developments and on those that can be regarded as specific to this project.

  11. Enhancement of Ti-containing hydrogenated carbon (Ti-C:H) films by high-power plasma-sputtering

    International Nuclear Information System (INIS)

    Gwo, Jyh; Chu, Chun-Lin; Tsai, Ming-Jui; Lee, Shyong

    2012-01-01

    Ti-containing amorphous hydrogenated carbon (Ti-C:H) thin films were deposited on stainless steel SS304 substrates by high-power pulsed magnetron sputtering (HPPMS) in an atmosphere of mixed Ar and C 2 H 2 gases using titanium metal as the cathodic material. The multilayer structure of the deposited film had a Ti-TiC-DLC gradient to improve adhesion and reduce residual stress. This study investigates the effects of substrate bias and target-to-substrate distance on the mechanical properties of Ti-C:H films. Film properties, including composition, morphology, microstructure, mechanical, and tribology, were examined by glow discharge spectroscopy (GDS), scanning electron microscopy (SEM), X-ray diffraction (XRD), Raman spectroscopy, and a nanoindenter and a pin-on-disk tribometer. Experiments revealed impressive results.

  12. Enhancement of Ti-containing hydrogenated carbon (Tisbnd C:H) films by high-power plasma-sputtering

    Science.gov (United States)

    Gwo, Jyh; Chu, Chun-Lin; Tsai, Ming-Jui; Lee, Shyong

    2012-02-01

    Ti-containing amorphous hydrogenated carbon (Tisbnd C:H) thin films were deposited on stainless steel SS304 substrates by high-power pulsed magnetron sputtering (HPPMS) in an atmosphere of mixed Ar and C2H2 gases using titanium metal as the cathodic material. The multilayer structure of the deposited film had a Tisbnd TiCsbnd DLC gradient to improve adhesion and reduce residual stress. This study investigates the effects of substrate bias and target-to-substrate distance on the mechanical properties of Tisbnd C:H films. Film properties, including composition, morphology, microstructure, mechanical, and tribology, were examined by glow discharge spectroscopy (GDS), scanning electron microscopy (SEM), X-ray diffraction (XRD), Raman spectroscopy, and a nanoindenter and a pin-on-disk tribometer. Experiments revealed impressive results.

  13. Near-Infrared Spectroscopy for Zeeman Spectra of Ti I in Plasma Using a Facing Target Sputtering System

    Science.gov (United States)

    Kobayashi, Shinji; Nishimiya, Nobuo; Suzuki, Masao

    2017-10-01

    The saturated absorption lines of neutral titanium were measured in the region of 9950-14380 cm-1 using a Ti:sapphire ring laser. A facing target sputtering system was used to obtain the gaseous state of a Ti I atom. The Zeeman splitting of 38 transitions was observed under the condition that the electric field component of a linearly polarized laser beam was parallel to the magnetic field. The gJ factors of the odd parity states were determined for 28 states belonging to 3d24s4p and 3d34p using those of the even parity states reported by Stachowska in 1997. The gJ factors of z5P1,2,3 levels were newly determined. gJ of y3F2, y3D2, z3P2, and z5S2 levels were refined.

  14. Influence of substrate pre-treatments by Xe{sup +} ion bombardment and plasma nitriding on the behavior of TiN coatings deposited by plasma reactive sputtering on 100Cr6 steel

    Energy Technology Data Exchange (ETDEWEB)

    Vales, S., E-mail: sandra.vales@usp.br [Universidade de São Paulo (USP), Escola de Engenharia de São Carlos, Av. Trabalhador São Carlense 400, São Carlos, SP CEP 13566-590 (Brazil); Brito, P., E-mail: ppbrito@gmail.com [Pontifícia Universidade Católica de Minas Gerais (PUC-MG), Av. Dom José Gaspar 500, 30535-901 Belo Horizonte, MG (Brazil); Pineda, F.A.G., E-mail: pipe8219@gmail.com [Universidade de São Paulo (USP), Escola de Engenharia de São Carlos, Av. Trabalhador São Carlense 400, São Carlos, SP CEP 13566-590 (Brazil); Ochoa, E.A., E-mail: abigail_ochoa@hotmail.com [Universidade Estadual de Campinas (UNICAMP), Campus Universitário Zeferino Vaz, Barão Geraldo, Campinas, SP CEP 13083-970 (Brazil); Droppa, R., E-mail: roosevelt.droppa@ufabc.edu.br [Universidade Federal do ABC (UFABC), Av. dos Estados, 5001, Santo André, SP CEP 09210-580 (Brazil); Garcia, J., E-mail: jose.garcia@sandvik.com [Sandvik Coromant R& D, Lerkrogsvägen 19, SE-12680, Stockholm (Sweden); Morales, M., E-mail: monieriz@gmail.com [Universidade Estadual de Campinas (UNICAMP), Campus Universitário Zeferino Vaz, Barão Geraldo, Campinas, SP CEP 13083-970 (Brazil); Alvarez, F., E-mail: alvarez@ifi.unicamp.br [Universidade Estadual de Campinas (UNICAMP), Campus Universitário Zeferino Vaz, Barão Geraldo, Campinas, SP CEP 13083-970 (Brazil); and others

    2016-07-01

    In this paper the influence of pre-treating a 100Cr6 steel surface by Xe{sup +} ion bombardment and plasma nitriding at low temperature (380 °C) on the roughness, wear resistance and residual stresses of thin TiN coatings deposited by reactive IBAD was investigated. The Xe{sup +} ion bombardment was carried out using a 1.0 keV kinetic energy by a broad ion beam assistance deposition (IBAD, Kaufman cell). The results showed that in the studied experimental conditions the ion bombardment intensifies nitrogen diffusion by creating lattice imperfections, stress, and increasing roughness. In case of the combined pre-treatment with Xe{sup +} ion bombardment and subsequent plasma nitriding, the samples evolved relatively high average roughness and the wear volume increased in comparison to the substrates exposed to only nitriding or ion bombardment. - Highlights: • Effect of Xe ion bombardment and plasma nitriding on TiN coatings was investigated. • Xe ion bombardment with 1.0 KeV increases nitrogen retention in plasma nitriding. • 1.0 KeV ion impact energy causes sputtering, thus increasing surface roughness. • TiN coating wear is minimum after plasma nitriding due to lowest roughness.

  15. Morphology and structure evolution of Cu(In,Ga)S{sub 2} films deposited by reactive magnetron co-sputtering with electron cyclotron resonance plasma assistance

    Energy Technology Data Exchange (ETDEWEB)

    Nie, Man, E-mail: man.nie@helmholtz-berlin.de; Ellmer, Klaus [Department of Solar Fuels and Energy Storage Materials, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, D14109 Berlin (Germany)

    2014-02-28

    Cu(In,Ga)S{sub 2} (CIGS) films were deposited on Mo coated soda lime glass substrates using an electron cyclotron resonance plasma enhanced one-step reactive magnetron co-sputtering process (ECR-RMS). The crystalline quality and the morphology of the Cu(In,Ga)S{sub 2} films were investigated by X-ray diffraction, atomic force microscopy, scanning electron microscopy, and X-ray fluorescence. We also compared these CIGS films with films previously prepared without ECR assistance and find that the crystallinity of the CIGS films is correlated with the roughness evolution during deposition. Atomic force microscopy was used to measure the surface topography and to derive one-dimensional power spectral densities (1DPSD). All 1DPSD spectra of CIGS films exhibit no characteristic peak which is typical for the scaling of a self-affine surface. The growth exponent β, characterizing the roughness R{sub q} evolution during the film growth as R{sub q} ∼ d{sup β}, changes with film thickness. The root-mean-square roughness at low temperatures increases only slightly with a growth exponent β = 0.013 in the initial growth stage, while R{sub q} increases with a much higher exponent β = 0.584 when the film thickness is larger than about 270 nm. Additionally, we found that the H{sub 2}S content of the sputtering atmosphere and the Cu- to-(In + Ga) ratio has a strong influence of the morphology of the CIGS films in this one-step ECR-RMS process.

  16. Structure and optical band-gap energies of Ba0.5Sr0.5TiO3 thin films fabricated by RF magnetron plasma sputtering

    International Nuclear Information System (INIS)

    Xu, Zhimou; Suzuki, Masato; Yokoyama, Shin

    2005-01-01

    The structure and optical band-gap energies of Ba 0.5 Sr 0.5 TiO 3 (BST0.5) thin films prepared on SiO 2 /Si and fused quartz substrates by RF magnetron plasma sputtering were studied in terms of deposition temperature and film thickness. Highly (100)-oriented BST0.5 thin films were successfully sputtered on a Si substrate with an approximately 1.0-μm-thick SiO 2 layer at a deposition temperature of above 450degC. The optical transmittance of BST0.5 thin films weakly depended on the magnitude of X-ray diffraction (XRD) peak intensity. This is very helpful for monolithic integration of BST0.5 films for electrooptical functions directly onto a SiO 2 /Si substrate. The band-gap energies showed a strong dependence on the deposition temperature and film thickness. It was mainly related to the quantum size effect and the influence of the crystallinity of thin films, such as grain boundaries, grain size, oriented growth, and the existence of an amorphous phase. The band-gap energy values, which were much larger than those of single crystals, decreased with the increase in the deposition temperature and the thickness of BST0.5 thin films. The band-gap energy of 311-nm-thick amorphous BST0.5 thin film was about 4.45 eV and that of (100)-oriented BST0.5 thin film with a thickness of 447 nm was about 3.89 eV. It is believed that the dependence of the band-gap energies of the thin films on the crystallinity for various values of deposition temperature and film thickness means that there could be application in integrated optical devices. (author)

  17. Modeling and analysis of surface roughness effects on sputtering, reflection, and sputtered particle transport

    International Nuclear Information System (INIS)

    Brooks, J.N.; Ruzic, D.N.

    1990-01-01

    The microstructure of the redeposited surface in tokamaks may affect sputtering and reflection properties and subsequent particle transport. This subject has been studied numerically using coupled models/codes for near-surface plasma particle kinetic transport (WBC code) and rough surface sputtering (fractal-TRIM). The coupled codes provide an overall Monte Carlo calculation of the sputtering cascade resulting from an initial flux of hydrogen ions. Beryllium, carbon, and tungsten surfaces are analyzed for typical high recycling, oblique magnetic field, divertor conditions. Significant variations in computed sputtering rates are found with surface roughness. Beryllium exhibits high D-T and self-sputtering coefficients for the plasma regime studied (T e = 30-75 eV). Carbon and tungsten sputtering is significantly lower. 9 refs., 6 figs., 1 tab

  18. Relation between the plasma characteristics and physical properties of functional zinc oxide thin film prepared by radio frequency magnetron sputtering process

    International Nuclear Information System (INIS)

    Hsu, Che-Wei; Cheng, Tsung-Chieh; Huang, Wen-Hsien; Wu, Jong-Shinn; Cheng, Cheng-Chih; Cheng, Kai-Wen; Huang, Shih-Chiang

    2010-01-01

    The ZnO thin film was deposited on a glass substrate by a RF reactive magnetron sputtering method. Results showed that plasma density, electron temperature, deposition rate and estimated ion bombardment energy increase with increasing applied RF power. Three distinct power regimes were observed, which are strongly correlated with plasma properties. In the low-power regime, the largest grain size was observed due to slow deposition rate. In the medium-power regime, the smallest grain size was found, which is attributed to insufficient time for the adatoms to migrate on substrate surface. In the high-power regime, relatively larger grain size was found due to very large ion bombardment energy which enhances the thermal migration of adatoms. Regardless of pure ZnO thin film or ZnO on glass, high transmittance (> 80%) in the visible region can be generally observed. However, the film thickness plays a more important role for controlling optical properties, especially in the UV region, than the applied RF power. In general, with properly coated ZnO thin film, we can obtain a glass substrate which is highly transparent in the visible region, is of good anti-UV characteristics, and is highly hydrophobic, which is highly suitable for applications in the glass industry.

  19. Alamethicin permeabilizes the plasma membrane and mitochondria but not the tonoplast in tobacco (Nicotiana tabacum L. cv Bright Yellow) suspension cells

    DEFF Research Database (Denmark)

    Matic, S.; Geisler, D.A.; Møller, I.M.

    2005-01-01

    remained intact, as indicated by an unaffected tonoplast proton gradient. Low-flux permeabilization of plasma membranes and mitochondria at moderate AlaM concentrations was reversible and did not affect cell vigour. Higher AlaM concentrations induced cell death. After the addition of catalase that removes...... concentrations. Possible uses and limitations of this method for plant cell research are discussed.......The ion channel-forming peptide AlaM (alamethicin) is known to permeabilize isolated mitochondria as well as animal cells. When intact tobacco (Nicotiana tabacum L.) Bright Yellow-2 cells were treated with AlaM, the cells became permeable for low-molecular-mass molecules as shown by induced leakage...

  20. Determination of the oxidation mechanism to Cd Te obtained by rf reactive magnetron sputtering in a plasma of Ar-N{sub 2}O; Determinacion del mecanismo de oxigenacion del CdTe obtenido por rf sputtering reactivo con magnetron en un plasma de Ar-N{sub 2}O

    Energy Technology Data Exchange (ETDEWEB)

    Caballero B, F.; Zapata N, A.; Bartolo P, P.; Castro R, R.; Zapata T, M.; Cauich, W.; Pena, J.L. [Departamento de Fisica Aplicada, Centro deInvestigacion y de Estudios Avanzados, Instituto Politecnico Nacional, Unidad Merida, Apartado postal 73, Cordemex, 97310 Merida, Yucatan (Mexico)

    1998-12-31

    In this work we did studies to determinate the oxidation site and incorporation mechanism of oxygen to Cd Te, when preparing Cd Te:O thin films by r f reactive magnetron sputtering, using a Cd Te target and a controlled plasma of Ar-N{sub 2}O. We study the influence in the oxygen content in films due to the variation of N{sub 2}O partial pressure, plasma power and substrate position. We monitored the process in situ by mass spectrometry to determinate the variation of present compounds when varying the N{sub 2}O partial pressure and plasma power. Thin films composition was determined by Auger electron spectroscopy and their structure by X-ray diffraction. We demonstrate that oxygen incorporation has place mainly in the substrate, forming an amorphous Cd Te:O film. We found that exists Cd Te oxidation without using nitrous oxide, may be due to residual atmosphere. We demonstrate that Cd Te oxidation depends on nitrous oxide partial pressure and plasma power. We found that deposition rate of Cd Te:O thin films depend on nitrous oxide interaction with Cd Te in the target and on the chamber walls. We propose a reaction mechanism to explain the oxygen incorporation to Cd Te. (Author)

  1. Direct dynamic synthesis of nanodispersed phases of titanium oxides upon sputtering of electrodischarge titanium plasma into an air atmosphere

    Science.gov (United States)

    Sivkov, A. A.; Gerasimov, D. Yu.; Nikitin, D. S.

    2017-01-01

    Experimental investigations of the possibility of directly synthesizing nanodispersed crystalline phases of titanium dioxides with rutile and anatase structures in a hypervelocity jet of electroerosion plasma generated by a coaxial magnetoplasma accelerator with titanium electrodes are presented. A powder product containing nanosized polymorphic phases of titanium dioxide with a spherical shape of particles has been manufactured.

  2. Electrical resistivity change in Al:ZnO thin films dynamically deposited by bipolar pulsed direct-current sputtering and a remote plasma source

    International Nuclear Information System (INIS)

    Yang, Wonkyun; Joo, Junghoon

    2010-01-01

    The Al-doped ZnO (AZO) thin films for a transparent conducting oxide in solar cell devices were deposited by bipolar pulsed dc magnetron sputtering. This work was performed in an in-line type system and investigated AZO films in a static deposition mode and dynamic one, which is more important in the practical fields. Because of this dynamic deposition process, the zigzagged columnar structure was observed. This resulted in the decreasing electrical property, optical properties, and surface roughness. As a deposition in the dynamic mode, the resistivity increased from 1.64x10 -3 to 2.50x10 -3 Ω cm, as compared to that in the static mode, and the transmittance also decreased from 83.9% to 78.3%. To recover the disadvantage, a remote plasma source (RPS) was supported between the substrate and target for reducing zigzagged formation during the deposition. The deposition rate decreased by using RPS, but the electrical and optical properties of films got better than only dynamic mode. The resistivity and transmittance in the dynamic mode using RPS were 2.1x10 -3 Ω cm and 85.5%, respectively. In this study, the authors found the possibility to advance the electrical and optical properties of AZO thin films in the industry mode.

  3. Influence of Microwave Power on the Properties of Hydrogenated Diamond-Like Carbon Films Prepared by ECR Plasma Enhanced DC Magnetron Sputtering

    International Nuclear Information System (INIS)

    Ru Lili; Huang Jianjun; Gao Liang; Qi Bing

    2010-01-01

    Electron cyclotron resonance (ECR) plasma was applied to enhance the direct current magnetron sputtering to prepare hydrogenated diamond-like carbon (H-DLC) films. For different microwave powers, both argon and hydrogen gas are introduced separately as the ECR working gas to investigate the influence of microwave power on the microstructure and electrical property of the H-DLC films deposited on P-type silicon substrates. A series of characterization methods including the Raman spectrum and atomic force microscopy are used. Results show that, within a certain range, the increase in microwave power affects the properties of the thin films, namely the sp 3 ratio, the hardness, the nanoparticle size and the resistivity all increase while the roughness decreases with the increase in microwave power. The maximum of resistivity amounts to 1.1 x 10 9 Ω · cm. At the same time it is found that the influence of microwave power on the properties of H-DLC films is more pronounced when argon gas is applied as the ECR working gas, compared to hydrogen gas.

  4. Isotope puzzle in sputtering

    International Nuclear Information System (INIS)

    Zheng Liping

    1998-01-01

    Mechanisms affecting multicomponent material sputtering are complex. Isotope sputtering is the simplest in the multicomponent materials sputtering. Although only mass effect plays a dominant role in the isotope sputtering, there is still an isotope puzzle in sputtering by ion bombardment. The major arguments are as follows: (1) At the zero fluence, is the isotope enrichment ejection-angle-independent or ejection-angle-dependent? (2) Is the isotope angular effect the primary or the secondary sputter effect? (3) How to understand the action of momentum asymmetry in collision cascade on the isotope sputtering?

  5. Variables affecting simulated Be sputtering yields

    Energy Technology Data Exchange (ETDEWEB)

    Björkas, C., E-mail: carolina.bjorkas@helsinki.fi; Nordlund, K.

    2013-08-15

    Since beryllium is a strong candidate for the main plasma-facing material in future fusion reactors, its sputtering behaviour plays an important role in predicting the reactor’s life-time. Consensus about the actual sputtering yields has not yet been achieved, as observations are influenced by experimental method and/or studied sample. In this work, the beryllium sputtering due to deuterium and beryllium self-bombardment is analyzed using molecular dynamics simulations. The main methodological aspects that influence the outcome, such as flux and fluence of the bombardment, are highlighted, and it is shown that the simulated yields also depend on the sample structure and deuterium content.

  6. Low-loss interference filter arrays made by plasma-assisted reactive magnetron sputtering (PARMS) for high-performance multispectral imaging

    Science.gov (United States)

    Broßmann, Jan; Best, Thorsten; Bauer, Thomas; Jakobs, Stefan; Eisenhammer, Thomas

    2016-10-01

    Optical remote sensing of the earth from air and space typically utilizes several channels in the visible and near infrared spectrum. Thin-film optical interference filters, mostly of narrow bandpass type, are applied to select these channels. The filters are arranged in filter wheels, arrays of discrete stripe filters mounted in frames, or patterned arrays on a monolithic substrate. Such multi-channel filter assemblies can be mounted close to the detector, which allows a compact and lightweight camera design. Recent progress in image resolution and sensor sensitivity requires improvements of the optical filter performance. Higher demands placed on blocking in the UV and NIR and in between the spectral channels, in-band transmission and filter edge steepness as well as scattering lead to more complex filter coatings with thicknesses in the range of 10 - 25μm. Technological limits of the conventionally used ion-assisted evaporation process (IAD) can be overcome only by more precise and higher-energetic coating technologies like plasma-assisted reactive magnetron sputtering (PARMS) in combination with optical broadband monitoring. Optics Balzers has developed a photolithographic patterning process for coating thicknesses up to 15μm that is fully compatible with the advanced PARMS coating technology. This provides the possibility of depositing multiple complex high-performance filters on a monolithic substrate. We present an overview of the performance of recently developed filters with improved spectral performance designed for both monolithic filter-arrays and stripe filters mounted in frames. The pros and cons as well as the resulting limits of the filter designs for both configurations are discussed.

  7. Spectroscopic ellipsometry characterization of ZnO:Sn thin films with various Sn composition deposited by remote-plasma reactive sputtering

    Science.gov (United States)

    Janicek, Petr; Niang, Kham M.; Mistrik, Jan; Palka, Karel; Flewitt, Andrew J.

    2017-11-01

    ZnO:Sn thin films were deposited onto thermally oxidized silicon substrates using a remote plasma reactive sputtering. Their optical constants (refractive index n and extinction coefficient k) were determined from ellipsometric data recorded over a wide spectral range (0.05-6 eV). Parametrization of ZnO:Sn complex dielectric permittivity consists of a parameterized semiconductor oscillator function describing the short wavelength absorption edge, a Drude oscillator describing free carrier absorption in near-infrared part of spectra and a Lorentz oscillator describing the long wavelength absorption edge and intra-band absorption in the ultra-violet part of the spectra. Using a Mott-Davis model, the increase in local disorder with increasing Sn doping is quantified from the short wavelength absorption edge onset. Using the Wemple-DiDomenico single oscillator model for the transparent part of the optical constants spectra, an increase in the centroid distance of the valence and conduction bands with increasing Sn doping is shown and only slight increase in intensity of the inter-band optical transition due to Sn doping occurs. The Drude model applied in the near-infrared part of the spectra revealed the free carrier concentration and mobility of ZnO:Sn. Results show that the range of transparency of prepared ZnO:Sn layers is not dramatically affected by Sn doping whereas electrical conductivity could be controlled by Sn doping. Refractive index in the transparent part is comparable with amorphous Indium Gallium Zinc Oxide allowing utilization of prepared ZnO:Sn layers as an indium-free alternative.

  8. Ion-induced sputtering

    International Nuclear Information System (INIS)

    Yamamura, Yasumichi; Shimizu, Ryuichi; Shimizu, Hazime; Ito, Noriaki.

    1983-01-01

    The research on ion-induced sputtering has been continued for a long time, since a hundred or more years ago. However, it was only in 1969 by Sigmund that the sputtering phenomena were theoretically arranged into the present form. The reason why the importance of sputtering phenomena have been given a new look recently is the application over wide range. This paper is a review centering around the mechanism of causing sputtering and its characteristics. Sputtering is such a phenomenon that the atoms in the vicinity of a solid surface are emitted into vacuum by receiving a part of ion energy, or in other words, it is a kind of irradiation damage in the vicinity of a solid surface. In this meaning, it can be considered that the sputtering based on the ions located on the clean surface of a single element metal is simple, and has already been basically understood. On the contrary, the phenomena can not be considered to be fully understood in the case of alloys and compounds, because these surface conditions under irradiation are not always clear due to segregation and others. In the paper, the physical of sputtering, single element sputtering, the sputtering in alloys and compounds, and the behaviour of emitted particles are explained. Finally, some recent topics of the sputtering measurement by laser resonant excitation, the sputtering by electron excitation, chemical sputtering, and the sputtering in nuclear fusion reactors are described. (Wakatsuki, Y.)

  9. Sputtering of water ice

    International Nuclear Information System (INIS)

    Baragiola, R.A.; Vidal, R.A.; Svendsen, W.; Schou, J.; Shi, M.; Bahr, D.A.; Atteberrry, C.L.

    2003-01-01

    We present results of a range of experiments of sputtering of water ice together with a guide to the literature. We studied how sputtering depends on the projectile energy and fluence, ice growth temperature, irradiation temperature and external electric fields. We observed luminescence from the decay of H(2p) atoms sputtered by heavy ion impact, but not bulk ice luminescence. Radiolyzed ice does not sputter under 3.7 eV laser irradiation

  10. Characterization and modeling of multi-dipolar microwave plasmas: application to multi-dipolar plasma assisted sputtering; Caracterisation et modelisation des plasmas micro-onde multi-dipolaires: application a la pulverisation assistee par plasma multi-dipolaire

    Energy Technology Data Exchange (ETDEWEB)

    Tran, T.V

    2006-12-15

    The scaling up of plasma processes in the low pressure range remains a question to be solved for their rise at the industrial level. One solution is the uniform distribution of elementary plasma sources where the plasma is produced via electron cyclotron resonance (ECR) coupling. These elementary plasma sources are made up of a cylindrical permanent magnet (magnetic dipole) set at the end of a coaxial microwave line. Although of simple concept, the optimisation of these dipolar plasma sources is in fact a complex problem. It requires the knowledge, on one hand, of the configurations of static magnetic fields and microwave electric fields, and, on the other hand, of the mechanisms of plasma production in the region of high intensity magnetic field (ECR condition), and of plasma diffusion. Therefore, the experimental characterisation of the operating ranges and plasma parameters has been performed by Langmuir probes and optical emission spectroscopy on different configurations of dipolar sources. At the same time, in a first analytical approach, calculations have been made on simple magnetic field configurations, motion and trajectory of electrons in these magnetic fields, and the acceleration of electrons by ECR coupling. Then, the results have been used for the validation of the numerical modelling of the electron trajectories by using a hybrid PIC (particle-in-cell) / MC (Monte Carlo) method. The experimental study has evidenced large operating domains, between 15 and 200 W of microwave power, and from 0.5 to 15 mtorr argon pressure. The analysis of plasma parameters has shown that the region of ECR coupling is localised near the equatorial plane of the magnet and dependent on magnet geometry. These characterizations, applied to a cylindrical reactor using 48 sources, have shown that densities between 10{sup 11} and 10{sup 12} cm{sup -3} could be achieved in the central part of the volume at a few mtorr argon pressures. The modelling of electron trajectories near

  11. Origins of Beta Tantalum in Sputtered Coatings

    National Research Council Canada - National Science Library

    Mulligan, C

    2001-01-01

    .... Some of the most recent work has attempted to relate the energetics (i.e., atom/ion energy) of the plasma to the alpha right arrow beta transition. It has been shown that the energetics of the plasma can relate to the most crucial sputtering parameters. The most significant feature of the use of plasma energy to explain the alpha right arrow beta transition is that it relates the formation of beta-tantalum to a quantifiable measure.

  12. Heavy particle transport in sputtering systems

    Science.gov (United States)

    Trieschmann, Jan

    2015-09-01

    This contribution aims to discuss the theoretical background of heavy particle transport in plasma sputtering systems such as direct current magnetron sputtering (dcMS), high power impulse magnetron sputtering (HiPIMS), or multi frequency capacitively coupled plasmas (MFCCP). Due to inherently low process pressures below one Pa only kinetic simulation models are suitable. In this work a model appropriate for the description of the transport of film forming particles sputtered of a target material has been devised within the frame of the OpenFOAM software (specifically dsmcFoam). The three dimensional model comprises of ejection of sputtered particles into the reactor chamber, their collisional transport through the volume, as well as deposition of the latter onto the surrounding surfaces (i.e. substrates, walls). An angular dependent Thompson energy distribution fitted to results from Monte-Carlo simulations is assumed initially. Binary collisions are treated via the M1 collision model, a modified variable hard sphere (VHS) model. The dynamics of sputtered and background gas species can be resolved self-consistently following the direct simulation Monte-Carlo (DSMC) approach or, whenever possible, simplified based on the test particle method (TPM) with the assumption of a constant, non-stationary background at a given temperature. At the example of an MFCCP research reactor the transport of sputtered aluminum is specifically discussed. For the peculiar configuration and under typical process conditions with argon as process gas the transport of aluminum sputtered of a circular target is shown to be governed by a one dimensional interaction of the imposed and backscattered particle fluxes. The results are analyzed and discussed on the basis of the obtained velocity distribution functions (VDF). This work is supported by the German Research Foundation (DFG) in the frame of the Collaborative Research Centre TRR 87.

  13. The comparison of the optical spectra of carbon coatings prepared by magnetron sputtering and microwave plasma enhanced chemical vapor deposition measured by the photothermal deflection spectroscopy

    Czech Academy of Sciences Publication Activity Database

    Remeš, Zdeněk; Pham, T.T.; Varga, Marián; Kromka, Alexander; Mao, H.B.

    2015-01-01

    Roč. 7, č. 4 (2015), s. 321-324 ISSN 2164-6627 R&D Projects: GA MŠk LH12186 Institutional support: RVO:68378271 Keywords : nanocrystalline diamond * amorphous carbon * magnetron sputtering * CVD * optical spectroscopy Subject RIV: BM - Solid Matter Physics ; Magnetism

  14. Data compilation of angular distributions of sputtered atoms

    International Nuclear Information System (INIS)

    Yamamura, Yasunori; Takiguchi, Takashi; Tawara, Hiro.

    1990-01-01

    Sputtering on a surface is generally caused by the collision cascade developed near the surface. The process is in principle the same as that causing radiation damage in the bulk of solids. Sputtering has long been regarded as an undesirable dirty effect which destroys the cathodes and grids in gas discharge tubes or ion sources and contaminates plasma and the surrounding walls. However, sputtering is used today for many applications such as sputter ion sources, mass spectrometers and the deposition of thin films. Plasma contamination and the surface erosion of first walls due to sputtering are still the major problems in fusion research. The angular distribution of the particles sputtered from solid surfaces can possibly provide the detailed information on the collision cascade in the interior of targets. This report presents a compilation of the angular distribution of sputtered atoms at normal incidence and oblique incidence in the various combinations of incident ions and target atoms. The angular distribution of sputtered atoms from monatomic solids at normal incidence and oblique incidence, and the compilation of the data on the angular distribution of sputtered atoms are reported. (K.I.)

  15. Tests of a new axial sputtering technique in an ECRIS

    International Nuclear Information System (INIS)

    Scott, R.; Pardo, R.; Vondrasek, R.

    2012-01-01

    Axial and radial sputtering techniques have been used over the years to create beams from an ECRIS at multiple accelerator facilities. Operational experience has shown greater beam production when using the radial sputtering method versus axial sputtering. At Argonne National Laboratory, previous work with radial sputtering has demonstrated that the position of the sputter sample relative to the plasma chamber wall influences sample drain current, beam production and charge state distribution. The possibility of the chamber wall acting as a ground plane which influences the sputtering of material has been considered, and an attempt has been made to mimic this possible ground plane effect with a coaxial sample introduced from the injection end. Results of these tests will be shown as well as comparisons of outputs using the two methods. The paper is followed by the associated poster. (authors)

  16. Solar system sputtering

    Science.gov (United States)

    Tombrello, T. A.

    1982-01-01

    The sites and materials involved in solar system sputtering of planetary surfaces are reviewed, together with existing models for the processes of sputtering. Attention is given to the interaction of the solar wind with planetary atmospheres in terms of the role played by the solar wind in affecting the He-4 budget in the Venus atmosphere, and the erosion and differentiation of the Mars atmosphere by solar wind sputtering. The study is extended to the production of isotopic fractionation and anomalies in interplanetary grains by irradiation, and to erosion effects on planetary satellites with frozen volatile surfaces, such as with Io, Europa, and Ganymede. Further measurements are recommended of the molecular form of the ejected material, the yields and energy spectra of the sputtered products, the iosotopic fractionation sputtering causes, and the possibility of electronic sputtering enhancement with materials such as silicates.

  17. Reactive sputter deposition

    CERN Document Server

    Mahieu, Stijn

    2008-01-01

    In this valuable work, all aspects of the reactive magnetron sputtering process, from the discharge up to the resulting thin film growth, are described in detail, allowing the reader to understand the complete process. Hence, this book gives necessary information for those who want to start with reactive magnetron sputtering, understand and investigate the technique, control their sputtering process and tune their existing process, obtaining the desired thin films.

  18. Sputtering of water ice

    DEFF Research Database (Denmark)

    Baragiola, R.A.; Vidal, R.A.; Svendsen, W.

    2003-01-01

    We present results of a range of experiments of sputtering of water ice together with a guide to the literature. We studied how sputtering depends on the projectile energy and fluence, ice growth temperature, irradiation temperature and external electric fields. We observed luminescence from...

  19. Argonne inverted sputter source

    International Nuclear Information System (INIS)

    Yntema, J.L.; Billquist, P.J.

    1983-01-01

    The emittance of the inverted sputter source with immersion lenses was measured to be about 5π mm mrad MeV/sup 1/2/ at the 75% level over a wide range of beam intensities. The use of the source in experiments with radioactive sputter targets and hydrogen loaded targets is described. Self contamination of the source is discussed

  20. Photonometers for coating and sputtering machines

    Directory of Open Access Journals (Sweden)

    Václavík J.

    2013-05-01

    Full Text Available The concept of photonometers (alternative name of optical monitor of a vacuum deposition process for coating and sputtering machines is based on photonometers produced by companies like SATIS or HV Dresden. Photometers were developed in the TOPTEC centre and its predecessor VOD (Optical Development Workshop of Institut of Plasma Physics AS CR for more than 10 years. The article describes current status of the technology and ideas which will be incorporated in next development steps. Hardware and software used on coating machines B63D, VNA600 and sputtering machine UPM810 is presented.

  1. Photonometers for coating and sputtering machines

    Science.gov (United States)

    Oupický, P.; Jareš, D.; Václavík, J.; Vápenka, D.

    2013-04-01

    The concept of photonometers (alternative name of optical monitor of a vacuum deposition process) for coating and sputtering machines is based on photonometers produced by companies like SATIS or HV Dresden. Photometers were developed in the TOPTEC centre and its predecessor VOD (Optical Development Workshop of Institut of Plasma Physics AS CR) for more than 10 years. The article describes current status of the technology and ideas which will be incorporated in next development steps. Hardware and software used on coating machines B63D, VNA600 and sputtering machine UPM810 is presented.

  2. Deposition of SiOx thin films on Y-TZP by reactive magnetron sputtering: influence of plasma parameters on the adhesion properties between Y-TZP and resin cement for application in dental prosthesis

    Directory of Open Access Journals (Sweden)

    José Renato Calvacanti de Queiroz

    2011-01-01

    Full Text Available In this paper SiOx thin films were deposited on Y-TZP ceramics by reactive magnetron sputtering technique in order to improve the adhesion properties between Y-TZP and resin cement for applications in dental prosthesis. For fixed cathode voltage, target current, working pressure and target-to-substrate distance, SiOx thin films were deposited at different oxygen concentrations in the Ar+O2 plasma forming gas. After deposition processes, SiOx thin films were characterized by profilometry, energy dispersive spectroscopy (EDS, optical microscopy and scanning electron microscopy (SEM. Adhesion properties between Y-TZP and resin cement were evaluated by shear testing. Results indicate that films deposited at 20%O2 increased the bond strength to (32.8 ± 5.4 MPa. This value has not been achieved by traditional methods.

  3. Investigation of the negative ions in Ar/O.sub.2./sub. plasma of magnetron sputtering discharge with Al:Zn target by ion mass spectrometry

    Czech Academy of Sciences Publication Activity Database

    Pokorný, Petr; Mišina, Martin; Bulíř, Jiří; Lančok, Ján; Fitl, Přemysl; Musil, Jindřich; Novotný, Michal

    2011-01-01

    Roč. 8, č. 5 (2011), s. 459-464 ISSN 1612-8850 R&D Projects: GA AV ČR IAA100100718; GA AV ČR KAN400100653; GA ČR GP202/09/P324 Institutional research plan: CEZ:AV0Z10100522 Keywords : energy-resolved ion mass spectrometry * formation of negative ions * magnetron sputtering * mass spectrometry * transparent conductive oxide Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.468, year: 2011

  4. Influence of plasma-generated negative oxygen ion impingement on magnetron sputtered amorphous SiO2 thin films during growth at low temperatures

    International Nuclear Information System (INIS)

    Macias-Montero, M.; Garcia-Garcia, F. J.; Alvarez, R.; Gil-Rostra, J.; Gonzalez, J. C.; Gonzalez-Elipe, A. R.; Palmero, A.; Cotrino, J.

    2012-01-01

    Growth of amorphous SiO 2 thin films deposited by reactive magnetron sputtering at low temperatures has been studied under different oxygen partial pressure conditions. Film microstructures varied from coalescent vertical column-like to homogeneous compact microstructures, possessing all similar refractive indexes. A discussion on the process responsible for the different microstructures is carried out focusing on the influence of (i) the surface shadowing mechanism, (ii) the positive ion impingement on the film, and (iii) the negative ion impingement. We conclude that only the trend followed by the latter and, in particular, the impingement of O - ions with kinetic energies between 20 and 200 eV, agrees with the resulting microstructural changes. Overall, it is also demonstrated that there are two main microstructuring regimes in the growth of amorphous SiO 2 thin films by magnetron sputtering at low temperatures, controlled by the amount of O 2 in the deposition reactor, which stem from the competition between surface shadowing and ion-induced adatom surface mobility.

  5. Sputtering properties of tungsten 'fuzzy' surfaces

    International Nuclear Information System (INIS)

    Nishijima, D.; Baldwin, M.J.; Doerner, R.P.; Yu, J.H.

    2011-01-01

    Sputtering yields of He-induced W 'fuzzy' surfaces bombarded by Ar have been measured in the linear divertor plasma simulator PISCES-B. It is found that the sputtering yield of a fuzzy surface, Y fuzzy , decreases with increasing fuzzy layer thickness, L, and saturates at ∼10% of that of a smooth surface, Y smooth , at L > 1 μm. The reduction in the sputtering yield is suspected to be due mainly to the porous structure of fuzz, since the ratio, Y fuzzy /Y smooth follows (1 - p fuzz ), where p fuzz is the fuzz porosity. Further, Y fuzzy /Y smooth is observed to increase with incident ion energy, E i . This may be explained by an energy dependent change in the angular distribution of sputtered W atoms, since at lower E i , the angular distribution is observed to become more butterfly-shaped. That is, a larger fraction of sputtered W atoms can line-of-sight deposit/stick onto neighboring fuzz nanostructures for lower E i butterfly distributions, resulting in lower ratio of Y fuzzy /Y smooth .

  6. Fluence-dependent sputtering yield of micro-architectured materials

    Energy Technology Data Exchange (ETDEWEB)

    Matthes, Christopher S.R.; Ghoniem, Nasr M., E-mail: ghoniem@ucla.edu; Li, Gary Z.; Matlock, Taylor S.; Goebel, Dan M.; Dodson, Chris A.; Wirz, Richard E.

    2017-06-15

    Highlights: • Sputtering yield is shown to be transient and heavily dependent on surface architecture. • Fabricated nano- and Microstructures cause geometric re-trapping of sputtered material, which leads to a self-healing mechanism. • Initially, the sputtering yield of micro-architectured Mo is approximately 1/2 the value as that of a planar surface. • The study demonstrates that the sputtering yield is a dynamic property, dependent on the surface structure of a material. • A developed phenomenological model mathematically describes the transient behavior of the sputtering yield as a function of plasma fluence. - Abstract: We present an experimental examination of the relationship between the surface morphology of Mo and its instantaneous sputtering rate as function of low-energy plasma ion fluence. We quantify the dynamic evolution of nano/micro features of surfaces with built-in architecture, and the corresponding variation in the sputtering yield. Ballistic deposition of sputtered atoms as a result of geometric re-trapping is observed, and re-growth of surface layers is confirmed. This provides a self-healing mechanism of micro-architectured surfaces during plasma exposure. A variety of material characterization techniques are used to show that the sputtering yield is not a fundamental property, but that it is quantitatively related to the initial surface architecture and to its subsequent evolution. The sputtering yield of textured molybdenum samples exposed to 300 eV Ar plasma is roughly 1/2 of the corresponding value for flat samples, and increases with ion fluence. Mo samples exhibited a sputtering yield initially as low as 0.22 ± 5%, converging to 0.4 ± 5% at high fluence. The sputtering yield exhibits a transient behavior as function of the integrated ion fluence, reaching a steady-state value that is independent of initial surface conditions. A phenomenological model is proposed to explain the observed transient sputtering phenomenon, and to

  7. The statistics of sputtering

    International Nuclear Information System (INIS)

    Robinson, M.T.

    1993-01-01

    The MARLOWE program was used to study the statistics of sputtering on the example of 1- to 100-keV Au atoms normally incident on static (001) and (111) Au crystals. The yield of sputtered atoms was examined as a function of the impact point of the incident particles (''ions'') on the target surfaces. There were variations on two scales. The effects of the axial and planar channeling of the ions could be traced, the details depending on the orientation of the target and the energies of the ions. Locally, the sputtering yield was very sensitive to the impact point, small changes in position often producing large changes yield. Results indicate strongly that the sputtering yield is a random (''chaotic'') function of the impact point

  8. Sputtering and inelastic processes

    International Nuclear Information System (INIS)

    Baranov, I.A.; Tsepelevic, S.O.

    1987-01-01

    Experimental data and models of a new type of material sputtering with ions of relatively high energies due to inelastic (electron) processes are reviewed. This area of investigations began to develop intensively during the latest years. New experimental data of the authors on differential characteristics of ultradisperse gold and americium dioxide layers with fission fragments are given as well. Practical applications of the new sputtering type are considered as well as setup of possibl experiments at heavy multiply charged ion accelerators

  9. Quantitative evaluation of high-energy O− ion particle flux in a DC magnetron sputter plasma with an indium-tin-oxide target

    International Nuclear Information System (INIS)

    Suyama, Taku; Bae, Hansin; Setaka, Kenta; Ogawa, Hayato; Fukuoka, Yushi; Suzuki, Haruka; Toyoda, Hirotaka

    2017-01-01

    O − ion flux from the indium tin oxide (ITO) sputter target under Ar ion bombardment is quantitatively evaluated using a calorimetry method. Using a mass spectrometer with an energy analyzer, O − energy distribution is measured with spatial dependence. Directional high-energy O − ion ejected from the target surface is observed. Using a calorimetry method, localized heat flux originated from high-energy O − ion is measured. From absolute evaluation of the heat flux from O − ion, O − particle flux in order of 10 18 m −2 s −1 is evaluated at a distance of 10 cm from the target. Production yield of O − ion on the ITO target by one Ar + ion impingement at a kinetic energy of 244 eV is estimated to be 3.3  ×  10 −3 as the minimum value. (paper)

  10. Quantitative evaluation of high-energy O- ion particle flux in a DC magnetron sputter plasma with an indium-tin-oxide target

    Science.gov (United States)

    Suyama, Taku; Bae, Hansin; Setaka, Kenta; Ogawa, Hayato; Fukuoka, Yushi; Suzuki, Haruka; Toyoda, Hirotaka

    2017-11-01

    O- ion flux from the indium tin oxide (ITO) sputter target under Ar ion bombardment is quantitatively evaluated using a calorimetry method. Using a mass spectrometer with an energy analyzer, O- energy distribution is measured with spatial dependence. Directional high-energy O- ion ejected from the target surface is observed. Using a calorimetry method, localized heat flux originated from high-energy O- ion is measured. From absolute evaluation of the heat flux from O- ion, O- particle flux in order of 1018 m-2 s-1 is evaluated at a distance of 10 cm from the target. Production yield of O- ion on the ITO target by one Ar+ ion impingement at a kinetic energy of 244 eV is estimated to be 3.3  ×  10-3 as the minimum value.

  11. Effect of microstructure of TiN film on properties as bipolar plate coatings in polymer electrolyte membrane fuel cell prepared by inductively coupled plasma assisted magnetron sputtering

    International Nuclear Information System (INIS)

    Feng, Kai; Li, Zhuguo

    2013-01-01

    As potential application in bipolar plate of polymer electrolyte membrane fuel cell, the microstructure, corrosion resistance and the electrical conductivity of titanium nitride (TiN) and Si doped titanium nitride (Ti 0.9 Si 0.1 N) films deposited by magnetron sputtering with different bias voltages are investigated by X-ray diffraction (XRD), scanning electron microscope (SEM), atomic force microscope (AFM), electrochemical test and four-point probe method, respectively. XRD, SEM and AFM results reveal that the texture and topography of TiN film depend on the bias voltage and incorporation of Si. When the bias voltage is − 20 V and − 30 V, the TiN and Ti 0.9 Si 0.1 N films exhibit a dense (111) plane preferred growth, denser structure and smoother surface topography. The potentiodynamic test results indicate that the TiN and Ti 0.9 Si 0.1 N films have higher chemical inertness and better corrosion resistance. The films can satisfy the requirement of current density for bipolar plate materials. Incorporation of Si element into TiN film makes the passive current density more stable. Four-point probe measurement results show that the resistivity of both TiN and Ti 0.9 Si 0.1 N films reaches minimum when the deposition bias voltage is − 20 V. - Highlights: • Dense TiN and Ti 0.9 Si 0.1 N films are deposited by magnetron sputtering. • Preferred growth orientation of TiN depends on the bias voltage and Si doping. • TiN and Ti 0.9 Si 0.1 N films have excellent corrosion resistance. • Surface conductivity of TiN and Ti 0.9 Si 0.1 N films evolves with bias voltage

  12. Burkina Faso - BRIGHT II

    Data.gov (United States)

    Millennium Challenge Corporation — Millennium Challenge Corporation hired Mathematica Policy Research to conduct an independent evaluation of the BRIGHT II program. The three main research questions...

  13. Reactive dual magnetron sputtering for large area application

    International Nuclear Information System (INIS)

    Struempfel, J.

    2002-01-01

    Production lines for large area coating demand high productivity of reactive magnetron sputtering processes. Increased dynamic deposition rates for oxides and nitrides were already obtained by using of highly powered magnetrons in combination with advanced sputter techniques. However, besides high deposition rates the uniformity of such coatings has to be carefully considered. First the basics of reactive sputtering processes and dual magnetron sputtering are summarized. Different methods for process stabilization and control are commonly used for reactive sputtering. The Plasma Emission Monitor (PE M) offers the prerequisite for fast acting process control derived from the in-situ intensity measurements of a spectral line of the sputtered target material. Combined by multiple Plasma Emission Monitor control loops segmented gas manifolds are able to provide excellent thin film uniformity at high deposition rates. The Dual Magnetron allows a broad range of processing by different power supply modes. Medium frequency, DC and pulsed DC power supplies can be used for high quality layers. Whereas the large area coating of highly isolating layers like TiO 2 or SiO 2 is dominated by MF sputtering best results for coating with transparent conductive oxides are obtained by dual DC powering of the dual magnetron arrangement. (Author)

  14. Spatial structure of radio frequency ring-shaped magnetized discharge sputtering plasma using two facing ZnO/Al2O3 cylindrical targets for Al-doped ZnO thin film preparation

    Directory of Open Access Journals (Sweden)

    Takashi Sumiyama

    2017-05-01

    Full Text Available Spatial structure of high-density radio frequency ring-shaped magnetized discharge plasma sputtering with two facing ZnO/Al2O3 cylindrical targets mounted in ring-shaped hollow cathode has been measured and Al-doped ZnO (AZO thin film is deposited without substrate heating. The plasma density has a peak at ring-shaped hollow trench near the cathode. The radial profile becomes uniform with increasing the distance from the target cathode. A low ion current flowing to the substrate of 0.19 mA/cm2 is attained. Large area AZO films with a resistivity of 4.1 – 6.7×10-4 Ω cm can be prepared at a substrate room temperature. The transmittance is 84.5 % in a visible region. The surface roughnesses of AZO films are 0.86, 0.68, 0.64, 1.7 nm at radial positions of r = 0, 15, 30, 40 mm, respectively, while diffraction peak of AZO films is 34.26°. The grains exhibit a preferential orientation along (002 axis.

  15. Effect of organic-buffer-layer on electrical property and environmental reliability of Ga-doped ZnO films prepared by RF plasma assisted DC magnetron sputtering on plastic substrate

    International Nuclear Information System (INIS)

    Hinoki, Toshio; Kyuhara, Chika; Agura, Hideaki; Yazawa, Kenji; Kinoshita, Kentaro; Ohmi, Koutoku; Kishida, Satoru

    2010-01-01

    Ga-doped ZnO (GZO) transparent conductive films have been prepared by RF plasma assisted DC magnetron sputtering under a reductive atmosphere on organic-buffer-layer (OBL) coated polyethylene telephthalate (PET) substrates without intentionally heating substrates. Electrical and optical properties, crystallinity, and environmental reliability of the GZO films have been investigated. The distributional characteristic of resistivity is observed in the GZO film deposited on the OBL-coated PET substrates. The high resistivity at facing the erosion area in the source target is reduced by providing the RF plasma and H 2 gas near the substrate, resulting in a uniform distribution of the sheet resistance. It has been also found that the increase of resistivity by an accelerated aging test performed under a storage condition at 60 o C and at a relative humidity of 95% is suppressed by employing the OBL. The OBL suppresses the formation of cracks, which are induced by the aging test. These facts are thought to contribute to a high environmental reliability of GZO films on PET substrates. Values of resistivity, Hall mobility and carrier concentration are obtained: 5.0-20 x 10 -3 Ω cm, 4.0 cm 2 /Vs, and 3.8 x 10 20 cm -3 , respectively. An average transmittance of the GZO film including OBL and PET substrate is 78% in a visible region. The OBL enables to realize the practical use of GZO films on PET sheets.

  16. Pulsed dc self-sustained magnetron sputtering

    International Nuclear Information System (INIS)

    Wiatrowski, A.; Posadowski, W. M.; Radzimski, Z. J.

    2008-01-01

    The magnetron sputtering has become one of the commonly used techniques for industrial deposition of thin films and coatings due to its simplicity and reliability. At standard magnetron sputtering conditions (argon pressure of ∼0.5 Pa) inert gas particles (necessary to sustain discharge) are often entrapped in the deposited films. Inert gas contamination can be eliminated during the self-sustained magnetron sputtering (SSS) process, where the presence of the inert gas is not a necessary requirement. Moreover the SSS process that is possible due to the high degree of ionization of the sputtered material also gives a unique condition during the transport of sputtered particles to the substrate. So far it has been shown that the self-sustained mode of magnetron operation can be obtained using dc powering (dc-SSS) only. The main disadvantage of the dc-SSS process is its instability related to random arc formation. In such case the discharge has to be temporarily extinguished to prevent damaging both the magnetron source and power supply. The authors postulate that pulsed powering could protect the SSS process against arcs, similarly to reactive pulsed magnetron deposition processes of insulating thin films. To put this concept into practice, (i) the high enough plasma density has to be achieved and (ii) the type of pulsed powering has to be chosen taking plasma dynamics into account. In this article results of pulsed dc self-sustained magnetron sputtering (pulsed dc-SSS) are presented. The planar magnetron equipped with a 50 mm diameter and 6 mm thick copper target was used during the experiments. The maximum target power was about 11 kW, which corresponded to the target power density of ∼560 W/cm 2 . The magnetron operation was investigated as a function of pulse frequency (20-100 kHz) and pulse duty factor (50%-90%). The discharge (argon) extinction pressure level was determined for these conditions. The plasma emission spectra (400-410 nm range) and deposition

  17. Fundamental aspects of cathodic sputtering

    International Nuclear Information System (INIS)

    Harman, R.

    1979-01-01

    The main fundamental aspects and problems of cathodic sputtering used mainly for thin film deposition and sputter etching are discussed. Among many types of known sputtering techniques the radiofrequency /RF/ diode sputtering is the most universal one and is used for deposition of metals, alloys, metallic compounds, semiconductors and insulators. It seems that nowadays the largest number of working sputtering systems is of diode type. Sometimes also the dc or rf triode sputtering systems are used. The problems in these processes are practically equivalent and comparable with the problems in the diode method and therefore our discussion will be, in most cases applicable for both, the diode and triode methods

  18. BrightFocus Foundation

    Science.gov (United States)

    ... About BrightFocus Foundation Featured Content BrightFocus: Investing in Science to Save Mind and Sight We're here to help. Explore ... recognition is very important. Monday, November 6, 2017 New Diagnosis? Managing a mind and sight disease is a journey. And you’ ...

  19. Angular dependence of plasma parameters and film properties during high power impulse magnetron sputtering for deposition of Ti and TiO.sub.2./sub. layers

    Czech Academy of Sciences Publication Activity Database

    Hippler, R.; Hubička, Zdeněk; Čada, Martin; Kšírová, Petra; Wulff, H.; Helm, C.A.; Straňák, V.

    2017-01-01

    Roč. 121, č. 17 (2017), s. 1-9, č. článku 171906. ISSN 0021-8979 R&D Projects: GA ČR(CZ) GA15-00863S Institutional support: RVO:68378271 Keywords : HiPIMS * Langmuir probe * titanium dioxide * angular dependence * XRD * SEM Subject RIV: BL - Plasma and Gas Discharge Physics OBOR OECD: Fluids and plasma physics (including surface physics) Impact factor: 2.068, year: 2016

  20. Surface treatment of diamond-like carbon films by reactive Ar/CF{sub 4} high-power pulsed magnetron sputtering plasmas

    Energy Technology Data Exchange (ETDEWEB)

    Kimura, Takashi, E-mail: t-kimura@nitech.ac.jp [Graduate School of Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan); Nishimura, Ryotaro [Graduate School of Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan); Azuma, Kingo [Department of Electrical Engineering and Computer Sciences, University of Hyogo, 2167 Shosha, Himeji, Hyogo 671-2280 (Japan); Nakao, Setsuo; Sonoda, Tsutomu; Kusumori, Takeshi; Ozaki, Kimihiro [National Institute of Advanced Industrial Science and Technology (AIST) - Chubu, 2266-98 Anagahora, Moriyama, Nagoya 463-8560 (Japan)

    2015-12-15

    Surface modification of diamond-like carbon films deposited by a high-power pulsed magnetron sputtering (HPPMS) of Ar was carried out by a HPPMS of Ar/CF{sub 4} mixture, changing a CF{sub 4} fraction from 2.5% to 20%. The hardness of the modified films markedly decreased from about 13 to about 3.5 GPa with increasing CF{sub 4} fraction, whereas the water contact angle of the modified films increased from 68° to 109° owing to the increase in the CF{sub x} content on the film surface. C 1s spectra in X-ray photoelectron spectroscopy indicated that a graphitic structure of modified films was formed at CF{sub 4} fractions less than 5%, above which the modified films possessed a polymer-like structure. Influence of treatment time on the properties of the modified films was also investigated in the range of treatment time from 5 to 30 min. The properties of the modified films did not depend on the treatment time in the range of treatment time longer than 10 min, whereas the water contact angle was not sensitive to the treatment time at any treatment time.

  1. Comparative study of structural and electro-optical properties of ZnO:Ga films grown by steered cathodic arc plasma evaporation and sputtering on plastic and their application on polymer-based organic solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Liang, Chih-Hao, E-mail: dataman888@hotmail.com [R& D Division, Walsin Technology Corporation, Kaohsiung, Taiwan (China); Hsiao, Yu-Jen [National Nano Device Laboratories, National Applied Research Laboratories, Tainan, Taiwan (China); Hwang, Weng-Sing [Department of Materials Science and Engineering, National Cheng Kung University, Tainan, Taiwan (China)

    2016-08-01

    Ga-doped ZnO (GZO) films with various thicknesses (105–490 nm) were deposited on PET substrates at a low temperature of 90 °C by a steered cathodic arc plasma evaporation (steered CAPE), and a GZO film with a thickness of 400 nm was deposited at 90 °C by a magnetron sputtering (MS) for comparison. The comparative analysis of the microstructure, residual stress, surface morphology, electrical and optical properties, chemical states, and doping efficiency of the films produced by the steered CAPE and MS processes was performed, and the effect of thickness on the CAPE-grown GZO films was investigated in detail. The results showed that the GZO films grown by steered CAPE exhibited higher crystallinity and lower internal stress than those deposited by MS. The transmittance and electrical properties were also enhanced for the steered CAPE-grown films. The figure of merit (Φ = T{sup 10}/R{sub s}, where T is the transmittance and R{sub s} is the sheet resistance in Ω/□). was used to evaluate the performance of the electro-optical properties. The GZO films with a thickness of 400 nm deposited by CAPE had the highest Φ value, 1.94 × 10{sup −2} Ω{sup −1}, a corresponding average visible transmittance of 88.8% and resistivity of 6.29 × 10{sup −4} Ω·cm. In contrast, the Φ value of MS-deposited GZO film with a thickness of 400 nm is only 1.1 × 10{sup −3} Ω{sup −1}. This can be attributed to the increase in crystalline size, [0001] preferred orientation, decrease in stacking faults density and Ar contamination in steered CAPE-grown films, leading to increases in the Hall mobility and carrier density. In addition, the power conversion efficiency (PCE) of organic solar cells was significantly improved by using the CAPE-grown GZO electrode, and the PCE values were 1.2% and 1.7% for the devices with MS-grown and CAPE-grown GZO electrodes, respectively. - Highlights: • ZnO:Ga (GZO) films were grown on PET by steered cathodic arc plasma evaporation (CAPE

  2. Implantation, recoil implantation, and sputtering

    International Nuclear Information System (INIS)

    Kelly, R.

    1984-01-01

    The implantation and sputtering mechanisms which are relevant to ion bombardment of surfaces are described. These are: collision, thermal, electronic and photon-induced sputtering. 135 refs.; 36 figs.; 9 tabs

  3. Physics of ion sputtering

    International Nuclear Information System (INIS)

    Robinson, M.T.

    1984-04-01

    The ejection of atoms by the ion bombardment of solids is discussed in terms of linear collision cascade theory. A simple argument describes the energies of the ejecta, but elaborate models are required to obtain accurate sputtering yields and related quantities. These include transport theoretical models based on linearized Boltzmann equations, computer simulation models based on the binary collision approximation, and classical many-body dynamical models. The role of each kind of model is discussed. Several aspects of sputtering are illustrated by results from the simulation code MARLOWE. 20 references, 6 figures

  4. Comparative study of total power density at a substrate in pulsed DC magnetron and hollow-cathode plasma jet sputtering systems

    Czech Academy of Sciences Publication Activity Database

    Čada, Martin; Virostko, Petr; Kment, Štěpán; Hubička, Zdeněk

    2009-01-01

    Roč. 6, S1 (2009), S247-S252 ISSN 1612-8850. [International Conference on Plasma Surface Engineering /11./. Garmisch Partenkirchen, 15.09.2008-19.09.2008] R&D Projects: GA AV ČR KAN301370701; GA AV ČR KJB100100707; GA AV ČR KJB100100805; GA MŠk(CZ) 1M06002 Institutional research plan: CEZ:AV0Z10100522 Keywords : calorimeter probe * floating substrate * magnetron * plasma jet * pulsed discharge Subject RIV: BH - Optics, Masers, Lasers Impact factor: 4.037, year: 2009

  5. Nanocomposite Ti/hydrocarbon plasma polymer films from reactive magnetron sputtering as growth support for osteoblast-like and endothelial cells

    Czech Academy of Sciences Publication Activity Database

    Grinevich, A.; Bačáková, Lucie; Choukourov, A.; Boldyryeva, H.; Pihosh, Y.; Slavinska, D.; Nosková, Lenka; Škuciová, Mária; Lisá, Věra; Biederman, H.

    88A, č. 4 (2009), s. 952-966 ISSN 1549-3296 R&D Projects: GA AV ČR(CZ) KAN101120701 Institutional research plan: CEZ:AV0Z50110509 Keywords : titanium * maturation * plasma Subject RIV: EI - Biotechnology ; Bionics Impact factor: 2.816, year: 2009

  6. Stunningly bright optical emission

    Science.gov (United States)

    Heinke, Craig O.

    2017-12-01

    The detection of bright, rapid optical pulsations from pulsar PSR J1023+0038 have provided a surprise for researchers working on neutron stars. This discovery poses more questions than it answers and will spur on future work and instrumentation.

  7. High power pulsed magnetron sputtering of transparent conducting oxides

    International Nuclear Information System (INIS)

    Sittinger, V.; Ruske, F.; Werner, W.; Jacobs, C.; Szyszka, B.; Christie, D.J.

    2008-01-01

    High power pulsed magnetron sputtering (HPPMS) has been used in order to study the deposition of transparent conducting oxides. We summarize the studies carried out on different materials (indium tin oxide-ITO and aluminium-doped zinc oxide-AZO) using rather different technological approaches, namely sputtering of ceramic targets and reactive sputtering. For the deposition of AZO reactive HPPMS for metallic targets has been used. A feedback control loop has been implemented in order to stabilize the discharge at any given setpoint on the hysteresis curve. The hysteresis was also found to have a rather untypical form. Reactive HPPMS was found to be a promising tool for obtaining high quality films of low total thickness. In the case of ITO deposition a ceramic target has been used. The process has been characterized in terms of its plasma emission and increasing indium ionization was found for higher peak power densities. The properties of the deposited films were compared to DC sputtered films. While for DC sputtering the choice of oxygen addition and shieldings is crucial for determining surface morphology and resistivity, in HPPMS sputtering peak power density has been found to be a good parameter for influencing the crystal structure. The morphologies obtained differ strongly from those seen in DC sputtering. At high power densities films with low surface roughness and excellent resistivity could be deposited without the use of shieldings

  8. Proton sputtering. Final report

    International Nuclear Information System (INIS)

    Finfgeld, C.R.

    1975-01-01

    This research provides sputtering yields as a function of energy for H + and D + on several representative pure metallic elements, in the absence of surface contaminants. The experimental technique and apparatus are described. Data are given for Au, Co, Ta, W, and Mo

  9. Laser sputtering. Pt. 1

    International Nuclear Information System (INIS)

    Kelly, R.; Cuomo, J.J.; Leary, P.A.; Rothenburg, J.E.; Braren, B.E.; Aliotta, C.F.

    1985-01-01

    Irradiation, i.e. bombardment, with 193 nm laser pulses having an energy fluence of 2.5 J/cm 2 and a duration of proportional12 ns leads to rapid sputtering with Au, Al 2 O 3 , MgO, MgO.Al 2 O 3 , SiO 2 , glass, and LaB 6 , relatively slow sputtering with MgF 2 and diamond, and mainly thermal-stress cracking with W. Scanning electron microscopy (SEM) suggests that the mechanism for the sputtering of Au in either vacuum or air is one based on the hydrodynamics of molten Au, while an SEM-derived surface temperature estimate confirms that thermal sputtering (which might have been expected) is not possible. SEM with W shows that the near total lack of material removal is due to the thermal-stress cracking not leading to completed exfoliation, together with the surface temperature being too low for either hydrodynamical or thermal processes. Corresponding SEM with Al 2 O 3 shows, in the case of specimens bombarded in vacuum, topography of such a type that all mechanisms except electronic ones can be ruled out. The topography of Al 2 O 3 or other oxides bombarded in air through a mask is somewhat different, showing craters as for vacuum bombardments but ones which have a cone-like pattern on the bottom. (orig.)

  10. Sputtering of nano-grains by energetic ions

    CERN Document Server

    Bringa, E M

    2002-01-01

    Sputtering from grains with a size of tens of nanometers is important in a number of astrophysical environments having a variety of plasma properties and can have applications in nano-technology. Since energy deposition by incident ions or electrons can create 'hot' regions in a small grain, thermal spike (TS) models have been applied to estimate the sputtering. The excitations produced by a fast ion are often assumed to form a 'hot' cylindrical track. In this paper we use molecular dynamics (MD) calculations to describe the energy transport and sputtering due to the creation of a 'hot' track in a grain with one quarter million atoms. We show the enhancement due to grain size and find that TS models work over a limited range of excitation densities. Discrepancies of several orders of magnitude are found when comparing our MD results for sputtering of small dust grains to those obtained by the astrophysical community using spike models.

  11. Results of Monte-Carlo studies on backscattering and sputtering from 'pocket' and 'finned' structures

    International Nuclear Information System (INIS)

    Brown, K.P.

    1978-01-01

    A Monte-Carlo computer program which has been developed for studying backscattering and sputtering processes involving high energy particles in complex vacuum structures has been used to show that useful reductions in backscattering and sputtering can be achieved by pocketing or finning the wall surfaces of plasma containment vessels. (author)

  12. Vortex trapping in Pb-alloy Josephson junctions induced by strong sputtering of the base electrode

    International Nuclear Information System (INIS)

    Wada, M.; Nakano, J.; Yanagawa, F.

    1985-01-01

    It is observed that strong rf sputtering of the Pb-alloy base electrodes causes the junctions to trap magnetic vortices and thus induces Josephson current (I/sub J/) suppression. Trapping begins to occur when the rf sputtering that removes the native thermal oxide on the base electrode is carried out prior to rf plasma oxidation. Observed large I/sub J/ suppression is presumably induced by the concentration of vortices into the sputtered area upon cooling the sample below the transition temperature. This suggests a new method of the circumvention of the vortex trapping by strongly rf sputtering the areas of the electrode other than the junction areas

  13. The emittance and brightness characteristics of negative ion sources suitable for MeV ion implantation

    International Nuclear Information System (INIS)

    Alton, G.D.

    1987-01-01

    This paper provides the description and beam properties of ion sources suitable for use with ion implantation devices. Particular emphasis is placed on the emittance and brightness properties of state-of-the-art, high intensity, negative ion sources based on the cesium ion sputter principle

  14. High Brightness OLED Lighting

    Energy Technology Data Exchange (ETDEWEB)

    Spindler, Jeffrey [OLEDWorks LLC; Kondakova, Marina [OLEDWorks LLC; Boroson, Michael [OLEDWorks LLC; Hamer, John [OLEDWorks LLC

    2016-05-25

    In this work we describe the technology developments behind our current and future generations of high brightness OLED lighting panels. We have developed white and amber OLEDs with excellent performance based on the stacking approach. Current products achieve 40-60 lm/W, while future developments focus on achieving 80 lm/W or higher.

  15. High brightness ion source

    International Nuclear Information System (INIS)

    Dreyfus, R.W.; Hodgson, R.T.

    1975-01-01

    A high brightness ion beam is obtainable by using lasers to excite atoms or molecules from the ground state to an ionized state in increments, rather than in one step. The spectroscopic resonances of the atom or molecule are used so that relatively long wavelength, low power lasers can be used to obtain such ion beam

  16. Surface erosion of fusion reactor components due to radiation blistering and neutron sputtering

    International Nuclear Information System (INIS)

    Das, S.K.; Kaminsky, M.

    1975-01-01

    Radiation blistering and neutron sputtering can lead to the surface erosion of fusion reactor components exposed to plasma radiations. Recent studies of methods to reduce the surface erosion caused by these processes are discussed

  17. RF Reactive Magnetron Sputter Deposition of Silicon Sub-Oxides

    NARCIS (Netherlands)

    Hattum, E.D. van

    2007-01-01

    RF reactive magnetron plasma sputter deposition of silicon sub oxide E.D. van Hattum Department of Physics and Astronomy, Faculty of Sciences, Utrecht University The work described in the thesis has been inspired and stimulated by the use of SiOx layers in the direct inductive printing technology,

  18. The brightness of colour.

    Directory of Open Access Journals (Sweden)

    David Corney

    Full Text Available The perception of brightness depends on spatial context: the same stimulus can appear light or dark depending on what surrounds it. A less well-known but equally important contextual phenomenon is that the colour of a stimulus can also alter its brightness. Specifically, stimuli that are more saturated (i.e. purer in colour appear brighter than stimuli that are less saturated at the same luminance. Similarly, stimuli that are red or blue appear brighter than equiluminant yellow and green stimuli. This non-linear relationship between stimulus intensity and brightness, called the Helmholtz-Kohlrausch (HK effect, was first described in the nineteenth century but has never been explained. Here, we take advantage of the relative simplicity of this 'illusion' to explain it and contextual effects more generally, by using a simple Bayesian ideal observer model of the human visual ecology. We also use fMRI brain scans to identify the neural correlates of brightness without changing the spatial context of the stimulus, which has complicated the interpretation of related fMRI studies.Rather than modelling human vision directly, we use a Bayesian ideal observer to model human visual ecology. We show that the HK effect is a result of encoding the non-linear statistical relationship between retinal images and natural scenes that would have been experienced by the human visual system in the past. We further show that the complexity of this relationship is due to the response functions of the cone photoreceptors, which themselves are thought to represent an efficient solution to encoding the statistics of images. Finally, we show that the locus of the response to the relationship between images and scenes lies in the primary visual cortex (V1, if not earlier in the visual system, since the brightness of colours (as opposed to their luminance accords with activity in V1 as measured with fMRI.The data suggest that perceptions of brightness represent a robust

  19. Theory of thermal sputtering

    International Nuclear Information System (INIS)

    Kelly, R.

    1977-01-01

    An energetic ion which is incident on a solid target causes a momentary temperature increase in the impact region, i.e., a so-called thermal spike occurs. Such spikes are capable of causing (or supplementing) disordering, precipitation, crystallization, electronic excitation, stoichiometry change, desorption, and sputtering, it being the contribution to sputtering that is considered here. The approach used is compatible with modern damage-distribution theory. Thus the temperature profile left by the incident ion is taken as a three-dimensional Gaussian with parameters appropriate to power-law scattering, and is used as the initial condition for solving the heat-conduction equation. Let us write this solution as T = T(t, y), where t is time and y is a dimension parallel to the target surface. The vaporization flux from a solid surface is taken as pnsup(1/2)(2π 2 >kT)sup(-1/2), where p, the equilibrium pressure of a vapor species containing n atoms, can be written as p 0 exp(-L/T), p 0 and L are constants largely independent of temperature, and 2 > is the mean mass per atom of target. An equation for the thermal sputtering coefficient is given: after integration the final result takes the form: Ssub(thermal)=pnsup(1/2)[2π 2 >k(Tsub(infinity)+cΔT 0 )]sup(-1/2)πlambda 2 tsub(eff.)atoms/ion, where Tsub(infinity) is the macroscopic target temperature, cΔT 0 is the maximum temperature increase at x = y = 0, p is to be evaluated at T = Tsub(infinity) + cΔT 0 , lambda is the mean atomic spacing of the target, and tsub(eff.) is a quantity with units of time. (author)

  20. The Bright Universe Cosmology

    International Nuclear Information System (INIS)

    Surdin, M.

    1980-01-01

    It is shown that viewed from the 'outside', our universe is a black hole. Hence the 'inside' cosmology considered is termed as the Bright Universe Cosmology. The model proposed avoids the singularities of cosmologies of the Big Bang variety, it gives a good account of the redshifts, the cosmic background radiation, the number counts; it also gives a satisfactory explanation of the 'large numbers coincidence' and of the variation in time of fundamental constants. (Auth.)

  1. Study of the chemical sputtering in Tore-Supra

    International Nuclear Information System (INIS)

    Cambe, A.

    2002-01-01

    The work presented in this thesis focuses on the interactions between energetic particles coming from thermonuclear plasma and the inner components of a fusion machine. This interaction induces two major problems: erosion of the wall, and tritium retention. This report treats the erosion of carbon based materials. The first part is devoted to chemical sputtering, that appears to be the principal erosion mechanism, compared to physical sputtering and radiation enhanced sublimation that both can be limited. Chemical sputtering has been studied in situ in the tokamak Tore-Supra for ohmic and lower hybrid (LH) heated discharges, by means of mass spectrometry and optical spectroscopy. We have shown that it is necessary to take into account both methane and heavier hydrocarbons (C 2 D x and C 3 D y ) in the determination of the chemical sputtering yield. It is found that for the ohmic discharges, the sputtering yield of CD 4 (Y CD4 ) is highly flux (φ) dependent, showing a variation of the form: Y CD4 ∝ φ -0.23 . The experimental study also reveals that an increase of the surface temperature induces an augmentation of Y CD4 . The interpretation and the modelling of the experimental results have been performed with a Monte Carlo code (BBQ. In the second part of this work, we have developed and installed an infrared spectroscopy diagnostic in the 0.8-1.6, μm wavelength range dedicated to the measurement of surface temperature, and the identification of atomic and molecular lines emitted during plasma/wall interactions. In the third part, we present the feasibility study of an in situ tungsten deposition process at low temperature(<80 deg C) in order to suppress the chemical sputtering. This study shows that, with this method call Plasma Assisted Chemical Vapor Deposition (PACVD), we are able to coat the whole inner vessel of a tokamak with 1 μm of tungsten. (author)

  2. High rate reactive sputtering in an opposed cathode closed-field unbalanced magnetron sputtering system

    Science.gov (United States)

    Sproul, William D.; Rudnik, Paul J.; Graham, Michael E.; Rohde, Suzanne L.

    1990-01-01

    Attention is given to an opposed cathode sputtering system constructed with the ability to coat parts with a size up to 15 cm in diameter and 30 cm in length. Initial trials with this system revealed very low substrate bias currents. When the AlNiCo magnets in the two opposed cathodes were arranged in a mirrored configuration, the plasma density at the substrate was low, and the substrate bias current density was less than 1 mA/sq cm. If the magnets were arranged in a closed-field configuration where the field lines from one set of magnets were coupled with the other set, the substrate bias current density was as high as 5.7 mA/sq cm when NdFeB magnets were used. In the closed-field configuration, the substrate bias current density was related to the magnetic field strength between the two cathodes and to the sputtering pressure. Hard well-adhered TiN coatings were reactively sputtered in the opposed cathode system in the closed-field configuration, but the mirrored configuration produced films with poor adhesion because of etching problems and low plasma density at the substrate.

  3. Kiloamp high-brightness beams

    International Nuclear Information System (INIS)

    Caporaso, G.J.

    1987-01-01

    Brightness preservation of high-current relativistic electron beams under two different types of transport is discussed. Recent progress in improving the brightness of laser-guided beams in the Advanced Test Accelerator is reviewed. A strategy for the preservation of the brightness of space-charge-dominated beams in a solenoidal transport system is presented

  4. Radio frequency plasma excitation

    International Nuclear Information System (INIS)

    Burden, M.St.J.; Cross, K.B.

    1979-01-01

    An investigation into the use of rf sputtering for ion cleaning of insulating substrates before ion plating is reported. Initial experiments consisted of sputtering metals with rf power followed by the deposition of copper onto glass slides using rf plasma excitation and biasing supply. It was found that good quality films were obtained by rf ion plating onto plastics with excellent adhesion over a wide operating pressure range. A block schematic of the rf plasma excitation system is shown. (UK)

  5. Recent advancements in sputter-type heavy negative ion sources

    International Nuclear Information System (INIS)

    Alton, G.D.

    1989-01-01

    Significant advancement have been made in sputter-type negative ion sources which utilize direct surface ionization, or a plasma to form the positive ion beam used to effect sputtering of samples containing the material of interest. Typically, such sources can be used to generate usable beam intensities of a few μA to several mA from all chemically active elements, depending on the particular source and the electron affinity of the element in question. The presentation will include an introduction to the fundamental processes underlying negative ion formation by sputtering from a low work function surface and several sources will be described which reflect the progress made in this technology. 21 refs., 9 figs., 1 tab

  6. Sputtering of amorphous carbon layers studied by laser induced fluorescence

    International Nuclear Information System (INIS)

    Pasch, E.

    1992-07-01

    In order to minimize the radiation losses, it is desirable to keep the plasmas in nuclear fusion devices free of high-Z-impurities. Therefore, the walls of TEXTOR and other tokamaks are covered with thin layers of amorphous carbon layers (a-C:H) or amorphous carbon/boron layers (a-C/B:H). The sputtering behaviour of these layers has been studied under bombardment by Ar + ions with energies of 1.5 keV and current densities of a few mA/cm 2 . Investigations of these coatings were carried out with the object to measure the velocity distribution of the sputtered atoms and the sputtered yields by laser induced fluorescence in the vacuum ultraviolet. (orig.)

  7. Target surface condition during reactive glow discharge sputtering of copper

    International Nuclear Information System (INIS)

    Depla, D; Haemers, J; Gryse, R De

    2002-01-01

    During reactive glow discharge sputtering of copper in an argon/nitrogen plasma, we noticed an abrupt change of the target voltage and the deposition rate when the nitrogen concentration in the plasma exceeds a critical value. To explain this behaviour, the target surface after reactive glow discharge sputtering was examined by x-ray photoelectron spectroscopy (XPS). An experimental arrangement was constructed that allows direct transfer of the glow discharge cathode to the XPS analysis chamber without air exposure. These XPS measurements revealed that several different chemical states of nitrogen are present in the layer that forms on the target surface. The relative concentration of these different states changes when the critical nitrogen concentration in the plasma is exceeded

  8. Sputtering of a silicon surface: Preferential sputtering of surface impurities

    Czech Academy of Sciences Publication Activity Database

    Nietiadi, M.L.; Rosandi, Y.; Lorinčík, Jan; Urbassek, H.M.

    -, č. 303 (2013), s. 205-208 ISSN 0168-583X Institutional support: RVO:67985882 Keywords : Sputtering * Molecular dynamics * SIMS Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 1.186, year: 2013

  9. Sputtering. [as deposition technique in mechanical engineering

    Science.gov (United States)

    Spalvins, T.

    1976-01-01

    This paper primarily reviews the potential of using the sputtering process as a deposition technique; however, the manufacturing and sputter etching aspects are also discussed. Since sputtering is not regulated by classical thermodynamics, new multicomponent materials can be developed in any possible chemical composition. The basic mechanism for dc and rf sputtering is described. Sputter-deposition is described in terms of the unique advantageous features it offers such as versatility, momentum transfer, stoichiometry, sputter-etching, target geometry (coating complex surfaces), precise controls, flexibility, ecology, and sputtering rates. Sputtered film characteristics, such as strong adherence and coherence and film morphology, are briefly evaluated in terms of varying the sputtering parameters. Also described are some of the specific industrial areas which are turning to sputter-deposition techniques.

  10. Bright point study

    International Nuclear Information System (INIS)

    Tang, F.; Harvey, K.; Bruner, M.; Kent, B.; Antonucci, E.

    1982-01-01

    Transition region and coronal observations of bright points by instruments aboard the Solar Maximum Mission and high resolution photospheric magnetograph observations on September 11, 1980 are presented. A total of 31 bipolar ephemeral regions were found in the photosphere from birth in 9.3 hours of combined magnetograph observations from three observatories. Two of the three ephemeral regions present in the field of view of the Ultraviolet Spectrometer-Polarimeter were observed in the C IV 1548 line. The unobserved ephemeral region was determined to be the shortest-lived (2.5 hr) and lowest in magnetic flux density (13G) of the three regions. The Flat Crystal Spectrometer observed only low level signals in the O VIII 18.969 A line, which were not statistically significant to be positively identified with any of the 16 ephemeral regions detected in the photosphere. In addition, the data indicate that at any given time there lacked a one-to-one correspondence between observable bright points and photospheric ephemeral regions, while more ephemeral regions were observed than their counterparts in the transition region and the corona

  11. Basic electrochemical properties of sputtered gold film electrodes

    International Nuclear Information System (INIS)

    Libansky, Milan; Zima, Jiri; Barek, Jiri; Reznickova, Alena; Svorcik, Vaclav; Dejmkova, Hana

    2017-01-01

    Gold nanolayers made by sputtering of pure gold (physical vapour deposition) are commonly used for many biophysical and material applications. However, the use of sputtering method for fabrication of working electrodes for electroanalytical purposes is less common. This paper focuses on the testing and characterization of sputtered working roughened gold nanostructured film electrodes, which fall into category of upcoming desirable new generation of nanostructured gold working electrodes. Gold nanostructured films (80 nm thin) were sputtered onto 50 μm thin PTFE substrates with three different types of treatment: pristine, plasma treated, and plasma treated and subsequently spontaneously grafted with biphenyl-4,4′-dithiol. The characterization of gold nanostructured film electrodes was carried out by examination of the electrode reaction of standard redox probes (ferrocyanide/ferricyanide, hydroquinone/benzoquinone) in different types of supporting electrolytes (BR buffers of various pH, KCl, KNO 3 , H 2 SO 4 ), by exploration of the electrode surface by scanning electron microscopy, by atomic force microscopy accompanied by elementary analysis and contact angle measurements. The testing of electrodes was complemented by an attempt to calculate their real surface areas from Randles-Sevcik equation. All results were compared to conventional bulk gold electrode. The practical applicability of the nanostructured gold electrodes as sensors for the determination of environmental pollutants was verified by voltammetric determination of hydroquinone as a model electrochemically oxidisable organic environmental pollutant.

  12. High brightness electron accelerator

    International Nuclear Information System (INIS)

    Sheffield, R.L.; Carlsten, B.E.; Young, L.M.

    1994-01-01

    A compact high brightness linear accelerator is provided for use, e.g., in a free electron laser. The accelerator has a first plurality of accelerating cavities having end walls with four coupling slots for accelerating electrons to high velocities in the absence of quadrupole fields. A second plurality of cavities receives the high velocity electrons for further acceleration, where each of the second cavities has end walls with two coupling slots for acceleration in the absence of dipole fields. The accelerator also includes a first cavity with an extended length to provide for phase matching the electron beam along the accelerating cavities. A solenoid is provided about the photocathode that emits the electrons, where the solenoid is configured to provide a substantially uniform magnetic field over the photocathode surface to minimize emittance of the electrons as the electrons enter the first cavity. 5 figs

  13. Development of an inductively coupled impulse sputtering source for coating deposition

    Science.gov (United States)

    Loch, Daniel Alexander Llewellyn

    In recent years, highly ionised pulsed plasma processes have had a great impact on improving the coating performance of various applications, such as for cutting tools and ITO coatings, allowing for a longer service life and improved defect densities. These improvements stem from the higher ionisation degree of the sputtered material in these processes and with this the possibility of controlling the flux of sputtered material, allowing the regulation of the hardness and density of coatings and the ability to sputter onto complex contoured substrates. The development of Inductively Coupled Impulse Sputtering (ICIS) is aimed at the potential of utilising the advantages of highly ionised plasma for the sputtering of ferromagnetic material. In traditional magnetron based sputter processes ferromagnetic materials would shunt the magnetic field of the magnetron, thus reducing the sputter yield and ionisation efficiency. By generating the plasma within a high power pulsed radio frequency (RF) driven coil in front of the cathode, it is possible to remove the need for a magnetron by applying a high voltage pulsed direct current to the cathode attracting argon ions from the plasma to initiate sputtering. This is the first time that ICIS technology has been deployed in a sputter coating system. To study the characteristics of ICIS, current and voltage waveforms have been measured to examine the effect of increasing RF-power. Plasma analysis has been conducted by optical emission spectroscopy to investigate the excitation mechanisms and the emission intensity. These are correlated to the set RF-power by modelling assumptions based on electron collisions. Mass spectroscopy is used to measure the plasma potential and ion energy distribution function. Pure copper, titanium and nickel coatings have been deposited on silicon with high aspect ratio via to measure the deposition rate and characterise the microstructure. For titanium and nickel the emission modelling results are in

  14. Nanostructured hydroxyapatite/TiO2 composite coating applied to commercially pure titanium by a co-sputtering technique

    International Nuclear Information System (INIS)

    Lee, Baek-Hee; Koshizaki, Naoto

    2008-01-01

    We demonstrate an approach for the coating of nanostructured hydroxyapatite(HAP)/TiO 2 composite on commercially pure Ti (CP-Ti) by a co-sputtering process. HAP/TiO 2 composite film was obtained by controlling the processing pressure. It was observed that decomposition of HAP into CaO was easily induced during sputtering at 0.53 Pa, a typical sputtering condition for film deposition. However, HAP/TiO 2 composite film was obtained with the sputtering pressure of 2.67 Pa. The Ca/P ratio was nearly maintained at 1.66 by sputter deposition at 2.67 Pa. We further confirmed by analysis of plasma spectral emission that the variation of the hydroxyl (OH) radical present was due to the Ar pressure during sputtering. It has been shown that HAP coatings are dependent on the processing pressure, which the hydroxyl radical requires in order to create HAP

  15. Cold plasmas

    International Nuclear Information System (INIS)

    Franz, G.

    1990-01-01

    This textbook discusses the following topics: Phenomenological description of a direct current glow discharge; the plasma (temperature distribution and measurement, potential variation, electron energy distribution function, charge neutralization, wall potentials, plasma oscillations); Production of charge carriers (ions, electrons, ionization in the cathode zone, negative glowing zone, Faraday dark space, positive column, anode zone, hollow cathode discharges); RF-discharges (charge carrier production, RF-Shields, scattering mechanisms); Sputtering (ion-surface interaction, kinetics, sputtering yield and energy distribution, systems and conditions, film formation and stresses, contamination, bias techniques, multicomponent film deposition, cohesion, magnetrons, triode systems, plasma enhanced chemical vapor deposition); Dry etching (sputter etching, reactive etching, topography, process control, quantitative investigations); Etching mechanisms (etching of Si and SiO 2 with CF 4 , of III/V-compound-semiconductors, combination of isotrope and anisotrope etching methods, surface cleaning); ion beam systems (applications, etching); Dyclotron-resonance-systems (electron cyclotron resonance systems, whistler-sources and 'resonant inductive plasma etching'); Appendix (electron energy distribution functions, Bohm's transition zone, plasma oscillations, scattering cross sections and mean free path, metastable states, Child-Langmuir-Schottky equation, loss mechanisms, charge carrier distribution in the positive column, breakdown at high frequencies, motion in a magnetic field, skin depth of an electric field for a HF-discharge, whistler waves, dispersion relations for plane wave propagation). (orig.) With 138 figs

  16. Study of carbon impurity generation by chemical sputtering in JT-60U

    International Nuclear Information System (INIS)

    Higashijima, S.; Kubo, H.; Sugie, T.; Shimizu, K.; Asakura, N.; Itami, K.; Hosogane, N.; Sakasai, A.; Konoshima, S.; Sakurai, S.; Takenaga, H.

    1997-01-01

    CD/CH-band intensities emitted from hydrocarbon molecules have been measured in the divertor region of JT-60U and the chemical sputtering yield of methane was estimated as a function of the surface temperature and the deuterium ion flux. The chemical sputtering yield increases with the surface temperature and decreases with increasing ion flux density in the L-mode plasmas. The B 4 C converted CFC tiles are installed in JT-60U and it is found that the chemical sputtering of B 4 C converted CFC tiles is suppressed in comparison to normal CFC tiles. (orig.)

  17. Deuterium sputtering of Li and Li-O films

    Science.gov (United States)

    Nelson, Andrew; Buzi, Luxherta; Kaita, Robert; Koel, Bruce

    2017-10-01

    Lithium wall coatings have been shown to enhance the operational plasma performance of many fusion devices, including NSTX and other tokamaks, by reducing the global wall recycling coefficient. However, pure lithium surfaces are extremely difficult to maintain in experimental fusion devices due to both inevitable oxidation and codeposition from sputtering of hot plasma facing components. Sputtering of thin lithium and lithium oxide films on a molybdenum target by energetic deuterium ion bombardment was studied in laboratory experiments conducted in a surface science apparatus. A Colutron ion source was used to produce a monoenergetic, mass-selected ion beam. Measurements were made under ultrahigh vacuum conditions as a function of surface temperature (90-520 K) using x-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES) and temperature programmed desorption (TPD). Results are compared with computer simulations conducted on a temperature-dependent data-calibrated (TRIM) model.

  18. Very low pressure high power impulse triggered magnetron sputtering

    Science.gov (United States)

    Anders, Andre; Andersson, Joakim

    2013-10-29

    A method and apparatus are described for very low pressure high powered magnetron sputtering of a coating onto a substrate. By the method of this invention, both substrate and coating target material are placed into an evacuable chamber, and the chamber pumped to vacuum. Thereafter a series of high impulse voltage pulses are applied to the target. Nearly simultaneously with each pulse, in one embodiment, a small cathodic arc source of the same material as the target is pulsed, triggering a plasma plume proximate to the surface of the target to thereby initiate the magnetron sputtering process. In another embodiment the plasma plume is generated using a pulsed laser aimed to strike an ablation target material positioned near the magnetron target surface.

  19. Laser micromachining of sputtered DLC films

    International Nuclear Information System (INIS)

    Fu, Y.Q.; Luo, J.K.; Flewitt, A.J.; Ong, S.E.; Zhang, S.; Milne, W.I.

    2006-01-01

    DLC films with different thicknesses (from 100 nm to 1.9 μm) were deposited using sputtering of graphite target in pure argon atmosphere without substrate heating. Film microstructures (sp 2 /sp 3 ratio) and mechanical properties (modulus, hardness, stress) were characterized as a function of film thickness. A thin layer of aluminum about 60 nm was deposited on the DLC film surface. Laser micromachining of Al/DLC layer was performed to form microcantilever structures, which were released using a reactive ion etching system with SF 6 plasma. Due to the intrinsic stress in DLC films and bimorph Al/DLC structure, the microcantilevers bent up with different curvatures. For DLC film of 100 nm thick, the cantilever even formed microtubes. The relationship between the bimorph beam bending and DLC film properties (such as stress, modulus, etc.) were discussed in details

  20. Co-sputtered optical films

    Energy Technology Data Exchange (ETDEWEB)

    Misiano, C; Simonetti, E [Selenia S.p.A., Rome (Italy)

    1977-06-01

    The co-sputtering of two dielectric materials with indices of refraction as widely different as possible has been investigated with the aim of obtaining both homogeneous films with an intermediate index of refraction and inhomogeneous films with predetermined profiles. An rf sputtering module is described which has been especially designed, with two separate cathodes and two independent tunable rf generators. The substrates are placed on a circular anode rotating underneath the two cathodes. So far mainly CeO/sub 2/, TiO2 and SiO/sub 2/ targets have been used. The deposition rate from each cathode and the total film thickness are determined by means of two quartz thickness monitors, sputtering compatible. Values obtained for the refractive index and optical thickness are reported, as well as repeatability, mechanical and chemical characteristics, reliability and high power optical radiation resistance. Finally, results obtained on optical components of practical interest are discussed.

  1. Laser sputter neutral mass spectrometry

    Energy Technology Data Exchange (ETDEWEB)

    King, B V; Clarke, M; Hu, H; Betz, [Newcastle Univ., NSW (Australia). Dept. of Physics

    1994-12-31

    Laser sputter neutral mass spectrometry (LSNMS) is an emerging technique for highly sensitive surface analysis. In this technique a target is bombarded with a pulsed beam of keV ions. The sputtered particles are intercepted by a high intensity pulsed laser beam above the surface and ionised with almost 100% efficiency. The photions may then be mass analysed using a quadrupole or, more commonly, using time of flight (TOF) techniques. In this method photoions are extracted from the ionisation region, accelerated to a known energy E{sub o} and strike a channelplate detector a distance `d` away. The flight time `t` of the photoions is then related to their mass by `d` {radical}m / {radical} 2E{sub o} so measurement of `t` allows mass spectra to be obtained. It is found that LSNMS is an emerging technique of great sensitivity and flexibility, useful for both applied analysis and to investigate basic sputtering processes. 4 refs., 3 figs.

  2. Laser sputter neutral mass spectrometry

    Energy Technology Data Exchange (ETDEWEB)

    King, B.V.; Clarke, M.; Hu, H.; Betz [Newcastle Univ., NSW (Australia). Dept. of Physics

    1993-12-31

    Laser sputter neutral mass spectrometry (LSNMS) is an emerging technique for highly sensitive surface analysis. In this technique a target is bombarded with a pulsed beam of keV ions. The sputtered particles are intercepted by a high intensity pulsed laser beam above the surface and ionised with almost 100% efficiency. The photions may then be mass analysed using a quadrupole or, more commonly, using time of flight (TOF) techniques. In this method photoions are extracted from the ionisation region, accelerated to a known energy E{sub o} and strike a channelplate detector a distance `d` away. The flight time `t` of the photoions is then related to their mass by `d` {radical}m / {radical} 2E{sub o} so measurement of `t` allows mass spectra to be obtained. It is found that LSNMS is an emerging technique of great sensitivity and flexibility, useful for both applied analysis and to investigate basic sputtering processes. 4 refs., 3 figs.

  3. Faraday screen sputtering on TPX

    International Nuclear Information System (INIS)

    Ehst, D.A.

    1994-12-01

    The TPX design stipulates that the ion-cyclotron resonance frequency (ICRF) antenna must have a Faraday screen (FS). The author considers here possible low Z coatings for the screen, as well as sputtering behavior of the Ni and Ti substrates. The theory of rf-induced sputtering has been developed, and he follows those theoretical approaches. The author's emphasis will be on both impurity generation as a possible source of increased Z eff , and also on actual erosion-lifetime of the materials under worst case conditions

  4. On niobium sputter coated cavities

    International Nuclear Information System (INIS)

    Arnolds-Mayer, G.; Kaufmann, U.; Downar, H.

    1988-01-01

    To coat copper cavities with a thin film of niobium, facilities for electropolishing and sputter deposition have been installed at Dornier. Experiments have been performed on samples to optimize electropolishing and deposition parameters. In this paper, characteristics concerning surface properties, adhesion of the niobium film to the copper substrate, and film properties were studied on planar samples. A 1.5 GHz single cell cavity made from oxygen free high conductivity (OFHC) copper was sputter coated twice. First rf measurements were performed in the temperature range from 300 K to 2 K

  5. Influence of ion source configuration and its operation parameters on the target sputtering and implantation process.

    Science.gov (United States)

    Shalnov, K V; Kukhta, V R; Uemura, K; Ito, Y

    2012-06-01

    In the work, investigation of the features and operation regimes of sputter enhanced ion-plasma source are presented. The source is based on the target sputtering with the dense plasma formed in the crossed electric and magnetic fields. It allows operation with noble or reactive gases at low pressure discharge regimes, and, the resulting ion beam is the mixture of ions from the working gas and sputtering target. Any conductive material, such as metals, alloys, or compounds, can be used as the sputtering target. Effectiveness of target sputtering process with the plasma was investigated dependently on the gun geometry, plasma parameters, and the target bias voltage. With the applied accelerating voltage from 0 to 20 kV, the source can be operated in regimes of thin film deposition, ion-beam mixing, and ion implantation. Multi-component ion beam implantation was applied to α-Fe, which leads to the surface hardness increasing from 2 GPa in the initial condition up to 3.5 GPa in case of combined N(2)-C implantation. Projected range of the implanted elements is up to 20 nm with the implantation energy 20 keV that was obtained with XPS depth profiling.

  6. The ZTF Bright Transient Survey

    Science.gov (United States)

    Fremling, C.; Sharma, Y.; Kulkarni, S. R.; Miller, A. A.; Taggart, K.; Perley, D. A.; Gooba, A.

    2018-06-01

    As a supplement to the Zwicky Transient Facility (ZTF; ATel #11266) public alerts (ATel #11685) we plan to report (following ATel #11615) bright probable supernovae identified in the raw alert stream from the ZTF Northern Sky Survey ("Celestial Cinematography"; see Bellm & Kulkarni, 2017, Nature Astronomy 1, 71) to the Transient Name Server (https://wis-tns.weizmann.ac.il) on a daily basis; the ZTF Bright Transient Survey (BTS; see Kulkarni et al., 2018; arXiv:1710.04223).

  7. Formation and stability of sputtered clusters

    International Nuclear Information System (INIS)

    Andersen, H.H.

    1989-01-01

    Current theory for the formation of sputtered clusters states that either atoms are sputtered individually and aggregate after having left the surface or they are sputtered as complete clusters. There is no totally sharp boundary between the two interpretations, but experimental evidence is mainly thought to favour the latter model. Both theories demand a criterion for the stability of the clusters. In computer simulations of sputtering, the idea has been to use the same interaction potential as in the lattice computations to judge the stability. More qualitatively, simple geometrical shapes have also been looked for. It is found here, that evidence for 'magic numbers' and electron parity effects in clusters have existed in the sputtering literature for a long time, making more sophisticated stability criteria necessary. The breakdown of originally sputtered metastable clusters into stable clusters gives strong support to the 'sputtered as clusters' hypothesis. (author)

  8. Particle beam experiments for the analysis of reactive sputtering processes in metals and polymer surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Corbella, Carles; Grosse-Kreul, Simon; Kreiter, Oliver; Arcos, Teresa de los; Benedikt, Jan; Keudell, Achim von [RD Plasmas with Complex Interactions, Ruhr-Universität Bochum, Universitätsstr. 150, 44780 Bochum (Germany)

    2013-10-15

    A beam experiment is presented to study heterogeneous reactions relevant to plasma-surface interactions in reactive sputtering applications. Atom and ion sources are focused onto the sample to expose it to quantified beams of oxygen, nitrogen, hydrogen, noble gas ions, and metal vapor. The heterogeneous surface processes are monitored in situ by means of a quartz crystal microbalance and Fourier transform infrared spectroscopy. Two examples illustrate the capabilities of the particle beam setup: oxidation and nitriding of aluminum as a model of target poisoning during reactive magnetron sputtering, and plasma pre-treatment of polymers (PET, PP)

  9. Inversion methods for analysis of neutron brightness measurements in tokamaks

    International Nuclear Information System (INIS)

    Gorini, G.; Gottardi, N.

    1990-02-01

    The problem of determining neutron emissivity from neutron brightness measurements in magnetic fusion plasmas is addressed. In the case of two-dimensional measurements with two orthogonal cameras, a complete, tomographic analysis of the data can in principle be performed. The results depend critically on the accuracy of the measurements and alternative solutions can be sought under the assumption of a known emissivity topology (Generalized Abel Inversion). In this work, neutron brightness data from the JET tokamak have been studied with both methods. We find that with the present experimental uncertainty (levels 10-20%) the Abel inversion method works best, while two-dimensional information cannot in general be deduced. This is confirmed by studies of the error propagation in the inversion using artificial data, which are also presented here. An important application of emissivity profile information is the determination of the plasma deuterium temperature profile, T D (R). Results are presented here from the analysis of JET data and the errors in T D (R) are discussed in some detail. It is found that, for typical JET plasma conditions, the dominant source of uncertainty arises from the high plasma impurity level and the fact that it is poorly known; these problems can be expected to be remedied and neutron brightness measurements would be expected to be very effective (especially in high density plasmas) as a T D (R) diagnostics. (author)

  10. Ion-assisted sputter deposition of molybdenum--silicon multilayers

    International Nuclear Information System (INIS)

    Vernon, S.P.; Stearns, D.G.; Rosen, R.S.

    1993-01-01

    X-ray multilayer (ML) structures that are fabricated by the use of magnetron-sputter deposition exhibit a degradation in structural quality as the deposition pressure is increased. The observed change in morphology is attributed to a reduced mobility of surface adsorbed atoms, which inhibits the formation of smooth, continuous layers. The application of a negative substrate bias produces ion bombardment of the growing film surface by sputtering gas ions extracted from the plasma and permits direct control of the energy density supplied to the film surface during thin-film growth. The technique supplements the energy lost to thermalization in high-pressure deposition and permits the fabrication of high-quality ML structures at elevated processing pressures. A threefold improvement in the soft-x-ray normal-incidence reflectance at 130 A results for substrate bias voltages of the order of ∼-150 V for Mo--Si ML's deposited at 10-mTorr Ar

  11. Fuzzy tungsten in a magnetron sputtering device

    Energy Technology Data Exchange (ETDEWEB)

    Petty, T.J., E-mail: tjpetty@liv.ac.uk [Department of Electrical Engineering and Electronics, University of Liverpool, Brownlow Hill, Liverpool, L69 3GJ (United Kingdom); Khan, A. [Pariser Building-G11, School of Mechanical, Aerospace and Civil Engineering, The University of Manchester, Manchester, M13 9PL (United Kingdom); Heil, T. [NiCaL, Block C Waterhouse Building, 1-3 Brownlow Street, Liverpool, L69 3GL (United Kingdom); Bradley, J.W., E-mail: j.w.bradley@liverpool.ac.uk [Department of Electrical Engineering and Electronics, University of Liverpool, Brownlow Hill, Liverpool, L69 3GJ (United Kingdom)

    2016-11-15

    Helium ion induced tungsten nanostructure (tungsten fuzz) has been studied in a magnetron sputtering device. Three parameters were varied, the fluence from 3.4 × 10{sup 23}–3.0 × 10{sup 24} m{sup −2}, the He ion energy from 25 to 70 eV, and the surface temperature from 900 to 1200 K. For each sample, SEM images were captured, and measurements of the fuzz layer thickness, surface roughness, reflectivity, and average structure widths are provided. A cross-over point from pre-fuzz to fully formed fuzz is found at 2.4 ± 0.4 × 10{sup 24} m{sup −2}, and a temperature of 1080 ± 60 K. No significant change was observed in the energy sweep. The fuzz is compared to low fluence fuzz created in the PISCES-A linear plasma device. Magnetron fuzz is less uniform than fuzz created by PISCES-A and with generally larger structure widths. The thicknesses of the magnetron samples follow the original Φ{sup 1/2} relation as opposed to the incubation fluence fit. - Highlights: • Fuzz has been created in a magnetron sputtering device. • Three parameters for fuzz formation have been swept. • A cross-over from pre-fuzz to fully formed fuzz is seen. • Evidence for annealing out at lower temperatures than has been seen before. • Evidence to suggest that fuzz grown in discrete exposures is not consistent with fuzz grown in one long exposure.

  12. Fuzzy tungsten in a magnetron sputtering device

    International Nuclear Information System (INIS)

    Petty, T.J.; Khan, A.; Heil, T.; Bradley, J.W.

    2016-01-01

    Helium ion induced tungsten nanostructure (tungsten fuzz) has been studied in a magnetron sputtering device. Three parameters were varied, the fluence from 3.4 × 10 23 –3.0 × 10 24  m −2 , the He ion energy from 25 to 70 eV, and the surface temperature from 900 to 1200 K. For each sample, SEM images were captured, and measurements of the fuzz layer thickness, surface roughness, reflectivity, and average structure widths are provided. A cross-over point from pre-fuzz to fully formed fuzz is found at 2.4 ± 0.4 × 10 24  m −2 , and a temperature of 1080 ± 60 K. No significant change was observed in the energy sweep. The fuzz is compared to low fluence fuzz created in the PISCES-A linear plasma device. Magnetron fuzz is less uniform than fuzz created by PISCES-A and with generally larger structure widths. The thicknesses of the magnetron samples follow the original Φ 1/2 relation as opposed to the incubation fluence fit. - Highlights: • Fuzz has been created in a magnetron sputtering device. • Three parameters for fuzz formation have been swept. • A cross-over from pre-fuzz to fully formed fuzz is seen. • Evidence for annealing out at lower temperatures than has been seen before. • Evidence to suggest that fuzz grown in discrete exposures is not consistent with fuzz grown in one long exposure.

  13. Plasma diagnostic studies of the influence of process variables upon the atomic and molecular species ejected from (1-x)Li4SiO4:xLi3PO4 targets during rf-magnetron sputtering

    International Nuclear Information System (INIS)

    Wachs, A.L.; Bates, J.B.; Dudney, N.J.; Luck, C.F.

    1990-01-01

    The deposition of thin-film electrolytes is a critical step in the development of lithium microbatteries with the potential for circuit integration. We have performed a preliminary study of the rf-magnetron sputtering of (1-x)Li 4 SiO 4 :xLi 3 PO 4 targets used to deposit amorphous thin-film electrolytes formed of the three-component system Li 2 O--SiO 2 --P 2 O 5 . Mass and optical emission spectroscopies have been used to investigate the effects of target composition and the deposition conditions upon the atomic and molecular species ejected from the targets. The data provide important information for understanding the mechanism of film formation and for monitoring the Li atomic flux onto the substrates during film growth. 5 refs., 7 figs., 1 tab

  14. Semi-empirical formulas for sputtering yield

    International Nuclear Information System (INIS)

    Yamamura, Yasumichi

    1994-01-01

    When charged particles, electrons, light and so on are irradiated on solid surfaces, the materials are lost from the surfaces, and this phenomenon is called sputtering. In order to understand sputtering phenomenon, the bond energy of atoms on surfaces, the energy given to the vicinity of surfaces and the process of converting the given energy to the energy for releasing atoms must be known. The theories of sputtering and the semi-empirical formulas for evaluating the dependence of sputtering yield on incident energy are explained. The mechanisms of sputtering are that due to collision cascade in the case of heavy ion incidence and that due to surface atom recoil in the case of light ion incidence. The formulas for the sputtering yield of low energy heavy ion sputtering, high energy light ion sputtering and the general case between these extreme cases, and the Matsunami formula are shown. At the stage of the publication of Atomic Data and Nuclear Data Tables in 1984, the data up to 1983 were collected, and about 30 papers published thereafter were added. The experimental data for low Z materials, for example Be, B and C and light ion sputtering data were reported. The combination of ions and target atoms in the collected sputtering data is shown. The new semi-empirical formula by slightly adjusting the Matsunami formula was decided. (K.I.)

  15. Teradiode's high brightness semiconductor lasers

    Science.gov (United States)

    Huang, Robin K.; Chann, Bien; Burgess, James; Lochman, Bryan; Zhou, Wang; Cruz, Mike; Cook, Rob; Dugmore, Dan; Shattuck, Jeff; Tayebati, Parviz

    2016-03-01

    TeraDiode is manufacturing multi-kW-class ultra-high brightness fiber-coupled direct diode lasers for industrial applications. A fiber-coupled direct diode laser with a power level of 4,680 W from a 100 μm core diameter, BPP) of 3.5 mm-mrad and is the lowest BPP multi-kW-class direct diode laser yet reported. This laser is suitable for industrial materials processing applications, including sheet metal cutting and welding. This 4-kW fiber-coupled direct diode laser has comparable brightness to that of industrial fiber lasers and CO2 lasers, and is over 10x brighter than state-of-the-art direct diode lasers. We have also demonstrated novel high peak power lasers and high brightness Mid-Infrared Lasers.

  16. Enhanced brightness x-ray lasers

    International Nuclear Information System (INIS)

    Wan, A.S.; Cauble, R.C.; Da Silva, L.B.; Moreno, J.C.; Nilsen, J.

    1994-09-01

    We are developing short-pulsed, enhanced-brightness, and coherent x-ray lasers (XRLs) for applications in areas such as plasma imaging. In a traveling wave pump setup the optical laser creating the XRL plasma sweeps along the lasant axis at the same speed as the x-rays. This technique becomes increasingly important as the target length increases and the gain duration shortens. An order of magnitude increase in output energy was measured with vs without traveling wave pump. Using multiple pulse techniques and multilayer mirrors to inject the output of one pulse back into the plasma formed by a later pulse we have begun to develop the x-ray analog of a multi-pass amplifler. The use of multiple pulses separated by as much as 1.6 ns reduces multilayer mirror damage. This injection technique is demonstrated by imaging the near-field emission profiles of the XRL. The addition of multilayer beamsplitter will allow us to effectively produce a soft XRL cavity

  17. Arc-discharge and magnetron sputtering combined equipment for nanocomposite coating deposition

    International Nuclear Information System (INIS)

    Koval, N.N.; Borisov, D.P.; Savostikov, V.M.

    2005-01-01

    It is known that characteristics of nanocomposite coatings produced by reactive magnetron sputtering undergo an essential influence on the following parameters such as original component composition of targets being sputtered, as well as abundance ratio of such components in the coatings deposited, relative content of inert and reactionary gases in a gas mixture used and a value of operating pressure in a chamber, substrate temperature, and a value of substrate bias potential, determining energy of ionized atoms, ionized atoms flow density, i.e. ion current density on a substrate. The multifactor character of production process of nanocomposite coatings with certain physical and mechanical properties demands a purposeful and complex control on all above-mentioned parameters. To solve such a problem, an arc-discharge and magnetron sputtering combined equipment including a vacuum chamber of approximately ∼ 0.5 m 3 with a built-in low-pressure plasma generator made on the basis of non-self-sustained discharge with a thermal cathode and a planar magnetron combined with two sputtered targets has been created. Construction of such a complex set-up provides both an autonomous mode of operation and simultaneous operation of an arc plasma generator and magnetron sputtering system. Magnetron sputtering of either one or two targets simultaneously is provided as well. An arc plasma generator enables ions current density control on a substrate in a wide range due to discharge current varying from 1 to 100 A. Energy of ions is also being controlled in a wide range by a negative bias potential from 0 to 1000 V applied to a substrate. The wide control range of gas plasma density of a arc discharge of approximately 10 9 -10 11 cm -3 and high uniformity of its distribution over the total volume of an operating chamber (about 15% error with regard to the mean value) provides a purposeful and simultaneous control either of magnetron discharge characteristics (operating pressure of

  18. Laser fluorescence spectroscopy of sputtered uranium atoms

    International Nuclear Information System (INIS)

    Wright, R.B.; Pellin, M.J.; Gruen, D.M.; Young, C.E.

    1979-01-01

    Laser induced fluorescence (LIF) spectroscopy was used to study the sputtering of 99.8% 238 U metal foil when bombarded by normally incident 500 to 3000 eV Ne + , Ar + , Kr + , and O 2 + . A three-level atom model of the LIF processes is developed to interpret the observed fluorescent emission from the sputtered species. The model shows that close attention must be paid to the conditions under which the experiment is carried out as well as to the details of the collision cascade theory of sputtering. Rigorous analysis shows that when properly applied, LIF can be used to investigate the predictions of sputtering theory as regards energy distributions of sputtered particles and for the determination of sputtering yields. The possibility that thermal emission may occur during sputtering can also be tested using the proposed model. It is shown that the velocity distribution (either the number density or flux density distribution, depending upon the experimental conditions) of the sputtered particles can be determined using the LIF technique and that this information can be used to obtain a description of the basic sputtering mechanisms. These matters are discussed using the U-atom fluorescence measurements as a basis. The relative sputtering yields for various incident ions on uranium were also measured for the first time using the LIF technique. A surprisingly high fraction of the sputtered uranium atoms were found to occupy the low lying metastable energy levels of U(I). The population of the sputtered metastable atoms were found approximately to obey a Boltzman distribution with an effective temperature of 920 +- 100 0 K. 41 references

  19. Simulation experiments and solar wind sputtering

    International Nuclear Information System (INIS)

    Griffith, J.E.; Papanastassiou, D.A.; Russell, W.A.; Tombrello, T.A.; Weller, R.A.

    1978-01-01

    In order to isolate the role played by solar wind sputtering from other lunar surface phenomena a number of simulation experiments were performed, including isotope abundance measurements of Ca sputtered from terrestrial fluorite and plagioclase by 50-keV and 130-keV 14 N beams, measurement of the energy distribution of U atoms sputtered with 80-keV 40 Ar, and measurement of the fraction of sputtered U atoms which stick on the surfaces used to collect these atoms. 10 references

  20. Reduction of residual gas in a sputtering system by auxiliary sputter of rare-earth metal

    International Nuclear Information System (INIS)

    Li Dejie

    2002-01-01

    In film deposition by sputtering, the oxidation and nitrification of the sputtered material lead to degradation of film quality, particularly with respect to metal sulfide films. We propose to use auxiliary sputtering as a method to produce a fresh film of rare-earth metal, usually dysprosium (Dy), that absorbs the active gases in a sputtering system, greatly reducing the background pressure and protecting the film from oxidation and nitrification effectively. The influence of the auxiliary sputtering power consumption, sputtering time, and medium gas pressure on the background pressure in the vacuum chamber is investigated in detail. If the auxiliary sputtering power exceeds 120 W and the sputtering time is more than 4 min, the background pressure is only one fourth of the ultimate pressure pumped by an oil diffusion pump. The absorption activity of the sputtered Dy film continues at least an hour after completion of the auxiliary sputter. Applied to film deposition of Ti and ZnS, this technique has been proven to be effective. For the Ti film, the total content of N and O is reduced from 45% to 20% when the auxiliary sputtering power of Dy is 120 W, and the sputtering time is 20 min. In the case of ZnS, the content of O is reduced from 8% to 2%

  1. Low resistivity of Ni–Al co-doped ZnO thin films deposited by DC magnetron sputtering at low sputtering power

    Energy Technology Data Exchange (ETDEWEB)

    Lee, JongWoo [Department of Materials Science and Engineering, Pusan National University, San 30 Jangjeon-dong, Geumjeong-gu, Busan 609-735 (Korea, Republic of); Hui, K.N. [Department of Mechanical Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791 (Korea, Republic of); Hui, K.S., E-mail: kshui@hanyang.ac.kr [Department of Mechanical Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791 (Korea, Republic of); Cho, Y.R., E-mail: yescho@pusan.ac.kr [Department of Materials Science and Engineering, Pusan National University, San 30 Jangjeon-dong, Geumjeong-gu, Busan 609-735 (Korea, Republic of); Chun, Ho-Hwan [Global Core Research Center for Ships and Offshore Plants (GCRC-SOP), Pusan National University, San 30 Jangjeon-dong, Geumjeong-gu, Busan 609-735 (Korea, Republic of)

    2014-02-28

    Ni–Al co-doped ZnO (NiAl:ZnO) thin films were deposited on glass substrates by DC magnetron sputtering in Ar using a single ceramic, spark-plasma-sintered target with 2 wt% Al and 5 wt% Ni. The effects of the sputtering power and gas pressure on the NiAl:ZnO films were studied. The structural, electrical, and optical properties of the films were characterized by X-ray diffraction, field emission scanning electron microscopy, Hall effect measurements and UV–vis transmission spectroscopy. As the sputtering power and gas pressure increased, the crystallinity, electrical properties and optical band gap of the films were improved. The NiAl:ZnO film deposited at 40 W at 6.0 mTorr had the strongest (0 0 2) XRD peak and the lowest resistivity of approximately 2.19 × 10{sup −3} Ω cm with an optical transmittance of 90%.

  2. Magnetron reactively sputtered Ti-DLC coatings on HNBR rubber : The influence of substrate bias

    NARCIS (Netherlands)

    Bui, X.L.; Pei, Y.T.; Hosson, J.Th.M. De

    2008-01-01

    In this study, Ti-containing diamond-like carbon (Ti-DLC) coatings have been deposited on HNBR (hydrogenated nitrile butadiene) rubber and also on Si wafer as reference via unbalanced magnetroli reactive sputtering from a Ti target in C2H2/Ar plasma. The deposition rates of coatings on rubber and Si

  3. Discharge Characteristic of VHF-DC Superimposed Magnetron Sputtering System

    Science.gov (United States)

    Toyoda, Hirotaka; Fukuoka, Yushi; Fukui, Takashi; Takada, Noriharu; Sasai, Kensuke

    2014-10-01

    Magnetron plasmas are one of the most important tools for sputter deposition of thin films. However, energetic particles from the sputtered target such as backscattered rare gas atoms or oxygen negative ions from oxide targets sometimes induce physical and chemical damages as well as surface roughening to the deposited film surface during the sputtering processes. To suppress kinetic energy of such particles, superposition of RF or VHF power to the DC power has been investigated. In this study, influence of the VHF power superposition on the DC target voltage, which is important factor to determine kinetic energy of high energy particles, is investigated. In the study, 40 MHz VHF power was superimposed to an ITO target and decrease in the target DC voltage was measured as well as deposited film deposition properties such as deposition rate or electrical conductivity. From systematic measurement of the target voltage, it was revealed that the target voltage can be determined by a very simple parameter, i.e., a ratio of VHF power to the total input power (DC and VHF powers) in spite of the DC discharge current. Part of this work was supported by ASTEP, JST.

  4. Effect of sputtering power on structure and properties of Bi film deposited by DC magnetron sputtering

    International Nuclear Information System (INIS)

    Liao Guo; He Zhibing; Xu Hua; Li Jun; Chen Taihua; Chen Jiajun

    2012-01-01

    Bi film was fabricated at different sputtering powers by DC magnetron sputtering. The deposition rate of Bi film as the function of sputtering power was studied. The surface topography of Bi film was observed by SEM, and the growth mode of Bi film was investigated. The crystal structure was analyzed by XRD. The grain size and stress of Bi film were calculated. The SEM images show that all the films are columnar growth. The average grain size firstly increases as the sputtering power increases, then decreases at 60 W. The film becomes loose with the increase of sputtering power, while, the film gets compact when the sputtering power becomes from 45 to 60 W. The XRD results show that films are polycrystalline of hexagonal. And the stress transforms from the tensile stress to compressive stress as the sputtering power increases. (authors)

  5. Helmholtz bright and boundary solitons

    Energy Technology Data Exchange (ETDEWEB)

    Christian, J M [Joule Physics Laboratory, School of Computing, Science and Engineering, Institute for Materials Research, University of Salford, Salford M5 4WT (United Kingdom); McDonald, G S [Joule Physics Laboratory, School of Computing, Science and Engineering, Institute for Materials Research, University of Salford, Salford M5 4WT (United Kingdom); Chamorro-Posada, P [Departmento de TeorIa de la Senal y Comunicaciones e IngenierIa Telematica, Universidad de Valladolid, ETSI Telecomunicacion, Campus Miguel Delibes s/n, 47011 Valladolid (Spain)

    2007-02-16

    We report, for the first time, exact analytical boundary solitons of a generalized cubic-quintic nonlinear Helmholtz (NLH) equation. These solutions have a linked-plateau topology that is distinct from conventional dark soliton solutions; their amplitude and intensity distributions are spatially delocalized and connect regions of finite and zero wave-field disturbances (suggesting also the classification as 'edge solitons'). Extensive numerical simulations compare the stability properties of recently derived Helmholtz bright solitons, for this type of polynomial nonlinearity, to those of the new boundary solitons. The latter are found to possess a remarkable stability characteristic, exhibiting robustness against perturbations that would otherwise lead to the destabilizing of their bright-soliton counterparts.

  6. A New Sky Brightness Monitor

    Science.gov (United States)

    Crawford, David L.; McKenna, D.

    2006-12-01

    A good estimate of sky brightness and its variations throughout the night, the months, and even the years is an essential bit of knowledge both for good observing and especially as a tool in efforts to minimize sky brightness through local action. Hence a stable and accurate monitor can be a valuable and necessary tool. We have developed such a monitor, with the financial help of Vatican Observatory and Walker Management. The device is now undergoing its Beta test in preparation for production. It is simple, accurate, well calibrated, and automatic, sending its data directly to IDA over the internet via E-mail . Approximately 50 such monitors will be ready soon for deployment worldwide including most major observatories. Those interested in having one should enquire of IDA about details.

  7. High-brightness injector modeling

    International Nuclear Information System (INIS)

    Lewellen, J.W.

    2004-01-01

    There are many aspects to the successful conception, design, fabrication, and operation of high-brightness electron beam sources. Accurate and efficient modeling of the injector are critical to all phases of the process, from evaluating initial ideas to successful diagnosis of problems during routine operation. The basic modeling tasks will vary from design to design, according to the basic nature of the injector (dc, rf, hybrid, etc.), the type of cathode used (thermionic, photo, field emitter, etc.), and 'macro' factors such as average beam current and duty factor, as well as the usual list of desired beam properties. The injector designer must be at least aware of, if not proficient at addressing, the multitude of issues that arise from these considerations; and, as high-brightness injectors continue to move out of the laboratory, the number of such issues will continue to expand.

  8. Helmholtz bright and boundary solitons

    International Nuclear Information System (INIS)

    Christian, J M; McDonald, G S; Chamorro-Posada, P

    2007-01-01

    We report, for the first time, exact analytical boundary solitons of a generalized cubic-quintic nonlinear Helmholtz (NLH) equation. These solutions have a linked-plateau topology that is distinct from conventional dark soliton solutions; their amplitude and intensity distributions are spatially delocalized and connect regions of finite and zero wave-field disturbances (suggesting also the classification as 'edge solitons'). Extensive numerical simulations compare the stability properties of recently derived Helmholtz bright solitons, for this type of polynomial nonlinearity, to those of the new boundary solitons. The latter are found to possess a remarkable stability characteristic, exhibiting robustness against perturbations that would otherwise lead to the destabilizing of their bright-soliton counterparts

  9. Giant Low Surface Brightness Galaxies

    Science.gov (United States)

    Mishra, Alka; Kantharia, Nimisha G.; Das, Mousumi

    2018-04-01

    In this paper, we present radio observations of the giant low surface brightness (LSB) galaxies made using the Giant Metrewave Radio Telescope (GMRT). LSB galaxies are generally large, dark matter dominated spirals that have low star formation efficiencies and large HI gas disks. Their properties suggest that they are less evolved compared to high surface brightness galaxies. We present GMRT emission maps of LSB galaxies with an optically-identified active nucleus. Using our radio data and archival near-infrared (2MASS) and near-ultraviolet (GALEX) data, we studied morphology and star formation efficiencies in these galaxies. All the galaxies show radio continuum emission mostly associated with the centre of the galaxy.

  10. Characterization of Niobium Oxide Films Deposited by High Target Utilization Sputter Sources

    International Nuclear Information System (INIS)

    Chow, R; Ellis, A D; Loomis, G E; Rana, S I

    2007-01-01

    High quality, refractory metal, oxide coatings are required in a variety of applications such as laser optics, micro-electronic insulating layers, nano-device structures, electro-optic multilayers, sensors and corrosion barriers. A common oxide deposition technique is reactive sputtering because the kinetic mechanism vaporizes almost any solid material in vacuum. Also, the sputtered molecules have higher energies than those generated from thermal evaporation, and so the condensates are smoother and denser than those from thermally-evaporated films. In the typical sputtering system, target erosion is a factor that drives machine availability. In some situations such as nano-layered capacitors, where the device's performance characteristics depends on thick layers, target life becomes a limiting factor on the maximizing device functionality. The keen interest to increase target utilization in sputtering has been addressed in a variety of ways such as target geometry, rotating magnets, and/or shaped magnet arrays. Also, a recent sputtering system has been developed that generates a high density plasma, directs the plasma beam towards the target in a uniform fashion, and erodes the target in a uniform fashion. The purpose of this paper is to characterize and compare niobia films deposited by two types of high target utilization sputtering sources, a rotating magnetron and a high density plasma source. The oxide of interest in this study is niobia because of its high refractive index. The quality of the niobia films were characterized spectroscopically in optical transmission, ellipsometrically, and chemical stoichiometry with X-ray photo-electron spectroscopy. The refractive index, extinction coefficients, Cauchy constants were derived from the ellipsometric modeling. The mechanical properties of coating density and stress are also determined

  11. High brightness semiconductor lasers with reduced filamentation

    DEFF Research Database (Denmark)

    McInerney, John; O'Brien, Peter.; Skovgaard, Peter M. W.

    1999-01-01

    High brightness semiconductor lasers have applications in spectroscopy, fiber lasers, manufacturing and materials processing, medicine and free space communication or energy transfer. The main difficulty associated with high brightness is that, because of COD, high power requires a large aperture...

  12. Sputtering calculations with the discrete ordinated method

    International Nuclear Information System (INIS)

    Hoffman, T.J.; Dodds, H.L. Jr.; Robinson, M.T.; Holmes, D.K.

    1977-01-01

    The purpose of this work is to investigate the applicability of the discrete ordinates (S/sub N/) method to light ion sputtering problems. In particular, the neutral particle discrete ordinates computer code, ANISN, was used to calculate sputtering yields. No modifications to this code were necessary to treat charged particle transport. However, a cross section processing code was written for the generation of multigroup cross sections; these cross sections include a modification to the total macroscopic cross section to account for electronic interactions and small-scattering-angle elastic interactions. The discrete ordinates approach enables calculation of the sputtering yield as functions of incident energy and angle and of many related quantities such as ion reflection coefficients, angular and energy distributions of sputtering particles, the behavior of beams penetrating thin foils, etc. The results of several sputtering problems as calculated with ANISN are presented

  13. Chemical sputtering of graphite by H+ ions

    International Nuclear Information System (INIS)

    Busharov, N.P.; Gorbatov, E.A.; Gusev, V.M.; Guseva, M.I.; Martynenko, Y.V.

    1976-01-01

    In a study of the sputtering coefficient S for the sputtering of graphite by 10-keV H + ions as a function of the graphite temperature during the bombardment, it is found that at T> or =750degreeC the coefficient S is independent of the target temperature and has an anomalously high value, S=0.085 atom/ion. The high rate of sputtering of graphite by atomic hydrogen ions is shown to be due to chemical sputtering of the graphite, resulting primarily in the formation of CH 4 molecules. At T=1100degreeC, S falls off by a factor of about 3. A model for the chemical sputtering of graphite is proposed

  14. Low-Damage Sputter Deposition on Graphene

    Science.gov (United States)

    Chen, Ching-Tzu; Casu, Emanuele; Gajek, Marcin; Raoux, Simone

    2013-03-01

    Despite its versatility and prevalence in the microelectronics industry, sputter deposition has seen very limited applications for graphene-based electronics. We have systematically investigated the sputtering induced graphene defects and identified the reflected high-energy neutrals of the sputtering gas as the primary cause of damage. In this talk, we introduce a novel sputtering technique that is shown to dramatically reduce bombardment of the fast neutrals and improve the structural integrity of the underlying graphene layer. We also demonstrate that sputter deposition and in-situ oxidation of 1 nm Al film at elevated temperatures yields homogeneous, fully covered oxide films with r.m.s. roughness much less than 1 monolayer, which shows the potential of using such technique for gate oxides, tunnel barriers, and multilayer fabrication in a wide range of graphene devices.

  15. Measurements of beryllium sputtering yields at JET

    Science.gov (United States)

    Jet-Efda Contributors Stamp, M. F.; Krieger, K.; Brezinsek, S.

    2011-08-01

    The lifetime of the beryllium first wall in ITER will depend on erosion and redeposition processes. The physical sputtering yields for beryllium (both deuterium on beryllium (Be) and Be on Be) are of crucial importance since they drive the erosion process. Literature values of experimental sputtering yields show an order of magnitude variation so predictive modelling of ITER wall lifetimes has large uncertainty. We have reviewed the old beryllium yield experiments on JET and used current beryllium atomic data to produce revised beryllium sputtering yields. These experimental measurements have been compared with a simple physical sputtering model based on TRIM.SP beryllium yield data. Fair agreement is seen for beryllium yields from a clean beryllium limiter. However the yield on a beryllium divertor tile (with C/Be co-deposits) shows poor agreement at low electron temperatures indicating that the effect of the higher sputtering threshold for beryllium carbide is important.

  16. DC Magnetron sputtering of Y-Ba-Cu-O thin films

    International Nuclear Information System (INIS)

    Larsson, Gunnar.

    1990-01-01

    I have been studying dc magnetron sputtering of thin film YBa 2 Cu 3 O 6+x , one of the recently discovered high- temperatures superconductors. In the introduction a brief review of the subjects sputtering and superconductivity is given. Since partial pressure measurements, especially for oxygen, have been important in the work I include a short description of the operating principles of mass spectroscopy. Experimental results in addition to what is given in the papers concerning plasma are presented in an appendix at the end of the introduction. (au)

  17. Sputtering/redeposition analysis of alkali-based tungsten composites for limiter/divertor applications

    International Nuclear Information System (INIS)

    DeWald, A.B.; Krauss, A.R.; Gruen, D.M.; Valentine, M.G.

    1986-07-01

    Composites of porous tungsten infiltrated with alkali metal-bearing alloys have been projected as a means of reducing plasma impurities and sputter erosion in magnetic fusion devices. Self-sustaining alkali metal overlayers have been observed to inhibit erosion of the underlying structural substrate by 2X to 10X. The alkali metal itself, insofar as it sputters as a secondary ion, is trapped at the surface by sheath potential and tangential magnetic fields. Self-regeneration of the alkali metal coating is obtained by thermal and radiation-induced segregation from the bulk

  18. Plasma container

    International Nuclear Information System (INIS)

    Ebisawa, Katsuyuki.

    1985-01-01

    Purpose: To enable to easily detect that the thickness of material to be abraded is reduced to an allowable limit from the outerside of the plasma container even during usual operation in a plasma vessel for a thermonuclear device. Constitution: A labelled material is disposed to the inside or rear face of constituent members of a plasma container undergoing the irradiation of plasma particles. A limiter plate to be abraded in the plasma container is composed of an armour member and heat removing plate, in which the armour member is made of graphite and heat-removing plate is made of copper. If the armour member is continuously abraded under the effect of sputtering due to plasma particles, silicon nitride embedded so far in the graphite at last appears on the surface of the limiter plate to undergo the impact shocks of the plasma particles. Accordingly, abrasion of the limiter material can be detected by a detector comprising gas chromatography and it can easily be detected from the outside of the plasma content even during normal operation. (Horiuchi, T.)

  19. Electron beam brightness with field immersed emission

    International Nuclear Information System (INIS)

    Boyd, J.K.; Neil, V.K.

    1985-01-01

    The beam quality or brightness of an electron beam produced with field immersed emission is studied with two models. First, an envelope formulation is used to determine the scaling of brightness with current, magnetic field and cathode radius, and examine the equilibrium beam radius. Second, the DPC computer code is used to calculate the brightness of two electron beam sources

  20. Does low surface brightness mean low density?

    NARCIS (Netherlands)

    deBlok, WJG; McGaugh, SS

    1996-01-01

    We compare the dynamical properties of two galaxies at identical positions on the Tully-Fisher relation, but with different surface brightnesses. We find that the low surface brightness galaxy UGC 128 has a higher mass-to-light ratio, and yet has lower mass densities than the high surface brightness

  1. High-brightness rf linear accelerators

    International Nuclear Information System (INIS)

    Jameson, R.A.

    1986-01-01

    The issue of high brightness and its ramifications in linacs driven by radio-frequency fields is discussed. A history of the RF linacs is reviewed briefly. Some current applications are then examined that are driving progress in RF linacs. The physics affecting the brightness of RF linacs is then discussed, followed by the economic feasibility of higher brightness machines

  2. An experiment on the dynamics of ion implantation and sputtering of surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Wright, G. M.; Barnard, H. A.; Kesler, L. A.; Peterson, E. E.; Stahle, P. W.; Sullivan, R. M.; Whyte, D. G.; Woller, K. B. [Plasma Science and Fusion Center, MIT, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139 (United States)

    2014-02-15

    A major impediment towards a better understanding of the complex plasma-surface interaction is the limited diagnostic access to the material surface while it is undergoing plasma exposure. The Dynamics of ION Implantation and Sputtering Of Surfaces (DIONISOS) experiment overcomes this limitation by uniquely combining powerful, non-perturbing ion beam analysis techniques with a steady-state helicon plasma exposure chamber, allowing for real-time, depth-resolved in situ measurements of material compositions during plasma exposure. Design solutions are described that provide compatibility between the ion beam analysis requirements in the presence of a high-intensity helicon plasma. The three primary ion beam analysis techniques, Rutherford backscattering spectroscopy, elastic recoil detection, and nuclear reaction analysis, are successfully implemented on targets during plasma exposure in DIONISOS. These techniques measure parameters of interest for plasma-material interactions such as erosion/deposition rates of materials and the concentration of plasma fuel species in the material surface.

  3. An experiment on the dynamics of ion implantation and sputtering of surfaces

    International Nuclear Information System (INIS)

    Wright, G. M.; Barnard, H. A.; Kesler, L. A.; Peterson, E. E.; Stahle, P. W.; Sullivan, R. M.; Whyte, D. G.; Woller, K. B.

    2014-01-01

    A major impediment towards a better understanding of the complex plasma-surface interaction is the limited diagnostic access to the material surface while it is undergoing plasma exposure. The Dynamics of ION Implantation and Sputtering Of Surfaces (DIONISOS) experiment overcomes this limitation by uniquely combining powerful, non-perturbing ion beam analysis techniques with a steady-state helicon plasma exposure chamber, allowing for real-time, depth-resolved in situ measurements of material compositions during plasma exposure. Design solutions are described that provide compatibility between the ion beam analysis requirements in the presence of a high-intensity helicon plasma. The three primary ion beam analysis techniques, Rutherford backscattering spectroscopy, elastic recoil detection, and nuclear reaction analysis, are successfully implemented on targets during plasma exposure in DIONISOS. These techniques measure parameters of interest for plasma-material interactions such as erosion/deposition rates of materials and the concentration of plasma fuel species in the material surface

  4. Atomistic self-sputtering mechanisms of rf breakdown in high-gradient linacs

    International Nuclear Information System (INIS)

    Insepov, Z.; Norem, J.; Veitzer, S.

    2010-01-01

    Molecular dynamics (MD) models of sputtering solid and liquid surfaces - including the surfaces charged by interaction with plasma, Coulomb explosion, and Taylor cone formation - were developed. MD simulations of self-sputtering of a crystalline (1 0 0) copper surface by Cu + ions in a wide range of ion energies (50 eV-50 keV) were performed. In order to accommodate energetic ion impacts on a target, a computational model was developed that utilizes MD to simulate rapid atomic collisions in the central impact zone, and a finite-difference method to absorb the energy and shock wave for the collisional processes occurring at a longer time scales. The sputtering yield increases if the surface temperature rises and the surface melts as a result of heat from plasma. Electrostatic charging of the surface under bombardment with plasma ions is another mechanism that can dramatically increase the sputtering yield because it reduces the surface binding energy and the surface tension. An MD model of Taylor cone formation at a sharp tip placed in a high electric field was developed, and the model was used to simulate Taylor cone formation for the first time. Good agreement was obtained between the calculated Taylor cone angle (104.3 deg.) and the experimental one (98.6 deg.). A Coulomb explosion (CE) was proposed as the main surface failure mechanism triggering breakdown, and the dynamics of CE was studied by MD.

  5. The influence of target oxygen on the YBa2Cu3O6+δ DC Magnetron sputtering process

    International Nuclear Information System (INIS)

    Larsson, G.; Selinder, T.I.; Helmersson, U

    1990-01-01

    The oxygen partial pressure and the target potential have been monitored under a range of process conditions during single target dc magnetron sputtering of Y-Ba-Cu-O. The introduced sputtering gas consisted in all but one instance of pure argon and hence the oxygen present in the plasma originated mainly from the target. During the first hours of sputtering the oxygen partial pressure was of the same magnitude as the argon pressure (3.0 Pa). As the oxygen was released from the target and subsequently removed by pumping, the target potential increased and the film composition became more stoichiometric. After 30-40 hours of sputtering the target potential and the oxygen pressure stabilized and the film composition was equal to that of the stoichiometric target. If an oxygen flow exceeding a critical level was mixed into the sputtering gas the target potential and the deposition rate decreased swiftly. This was due to target oxidation, further manifested in changing plasma and target colours. In some instances the stabilization after 'presputtering' was incomplete and oscillations in target voltage and oxygen partial pressure were observed. The fluctuations made it virtually impossible to obtain stoichiometric films. The oscillative behaviour of the sputtering process is tentatively explained by a target temperature dependent oxygen diffusion. (au)

  6. Observation of self-sputtering in energetic condensation of metal ions

    International Nuclear Information System (INIS)

    Anders, Andre

    2004-01-01

    The condensation of energetic metal ions on a surface may cause self-sputtering even in the absence of substrate bias. Charge-state-averaged self-sputtering yields were determined for both zirconium and gold ions generated by a cathodic vacuum arc. Films were deposited on differently biased substrates exposed to streaming Zr and Au vacuum arc plasma. The self-sputtering yields for both metals were estimated to be about 0.05 in the absence of bias, and exceeding 0.5 when bias reached-50 V. These surprisingly high values can be reconciled with binary collision theory and molecular dynamics calculations taking high the kinetic and potential energy of vacuum arc ions into account

  7. Measured signatures of low energy, physical sputtering in the line shape of neutral carbon emission

    Energy Technology Data Exchange (ETDEWEB)

    Brooks, N.H. [General Atomics, P.O. Box 85608, San Diego, CA 92186-5608 (United States)]. E-mail: brooks@fusion.gat.com; Isler, R.C. [Oak Ridge National Laboratory, Oak Ridge, TN 37831-6169 (United States); Whyte, D.G. [University of Wisconsin, Madison, WI 53706 (United States); Fenstermacher, M.E. [Livermore National Laboratory, Livermore, CA 94550 (United States); Groebner, R.J. [General Atomics, P.O. Box 85608, San Diego, CA 92186-5608 (United States); Stangeby, P.C. [University of Toronto Institute for Aerospace Studies, Toronto, M3H 5T6 (Canada); Heidbrink, W.W. [University of California, Irvine, CA 92697 (United States); Jackson, G.L. [General Atomics, P.O. Box 85608, San Diego, CA 92186-5608 (United States); Mahdavi, M.A. [General Atomics, P.O. Box 85608, San Diego, CA 92186-5608 (United States); West, W.P. [General Atomics, P.O. Box 85608, San Diego, CA 92186-5608 (United States)

    2005-03-01

    The most important mechanisms for introducing carbon into the DIII-D divertors [J.L. Luxon, Nucl. Fusion 42 (2002) 614] are physical and chemical sputtering. Previous investigations have indicated that operating conditions where one or the other of these is dominant can be distinguished by using CD and C{sub 2} emissions to infer C I influxes from dissociation of hydrocarbons and comparing to measured C I influxes. The present work extends these results through detailed analysis of the C I spectral line shapes. In general, it is found that the profiles are actually asymmetric and have shifted peaks. These features are interpreted as originating from a combination of an anisotropic velocity distribution from physical sputtering (the Thompson model) and an isotropic distribution from molecular dissociation. The present study utilizes pure helium plasmas to benchmark C I spectral profiles arising from physical sputtering alone.

  8. Hollow cathode discharges with gas flow: numerical modelling for the effect on the sputtered atoms and the deposition flux

    International Nuclear Information System (INIS)

    Bogaerts, Annemie; Okhrimovskyy, Andriy; Baguer, Neyda; Gijbels, Renaat

    2005-01-01

    A model is developed for a cylindrical hollow cathode discharge (HCD), with an axial gas flow (entering through a hole in the cathode bottom). The model combines a commercial computational fluid dynamics program 'FLUENT' to compute the gas flow, with home-developed Monte Carlo and fluid models for the plasma behaviour. In this paper, we focus on the behaviour of the sputtered atoms, and we investigate how the gas flow affects the sputtered atom density profiles and the fluxes, which is important for sputter deposition. The sputtered atom density profiles are not much affected by the gas flow. The flux, on the other hand, is found to be significantly enhanced by the gas flow, but in the present set-up it is far from uniform in the radial direction at the open end of the HCD, where a substrate for deposition could be located

  9. Low surface brightness spiral galaxies

    International Nuclear Information System (INIS)

    Romanishin, W.

    1980-01-01

    This dissertation presents an observational overview of a sample of low surface brightness (LSB) spiral galaxies. The sample galaxies were chosen to have low surface brightness disks and indications of spiral structure visible on the Palomar Sky Survey. They are of sufficient angular size (diameter > 2.5 arcmin), to allow detailed surface photometry using Mayall 4-m prime focus plates. The major findings of this dissertation are: (1) The average disk central surface brightness of the LSB galaxies is 22.88 magnitude/arcsec 2 in the B passband. (2) From broadband color measurements of the old stellar population, we infer a low average stellar metallicity, on the order of 1/5 solar. (3) The spectra and optical colors of the HII regions in the LSB galaxies indicate a lack of hot ionizing stars compared to HII regions in other late-type galaxies. (4) The average surface mass density, measured within the radius containing half the total mass, is less than half that of a sample of normal late-type spirals. (5) The average LSB galaxy neutral hydrogen mass to blue luminosity ratio is about 0.6, significantly higher than in a sample of normal late-type galaxies. (6) We find no conclusive evidence of an abnormal mass-to-light ratio in the LSB galaxies. (7) Some of the LSB galaxies exhibit well-developed density wave patterns. (8) A very crude calculation shows the lower metallicity of the LSB galaxies compared with normal late-type spirals might be explained simply by the deficiency of massive stars in the LSB galaxies

  10. High-power sputtering employed for film deposition

    International Nuclear Information System (INIS)

    Shapovalov, V I

    2017-01-01

    The features of high-power magnetron sputtering employed for the films’ deposition are reviewed. The main physical phenomena accompanying high-power sputtering including ion-electron emission, gas rarefaction, ionization of sputtered atoms, self-sputtering, ion sound waves and the impact of the target heating are described. (paper)

  11. High brightness beams and applications

    International Nuclear Information System (INIS)

    Sheffield, R.L.

    1995-01-01

    This paper describes the present research on attaining intense bright electron beams. Thermionic systems are briefly covered. Recent and past results from the photoinjector programs are given. The performance advantages and difficulties presently faced by researchers using photoinjectors is discussed. The progress that has been made in photocathode materials, both in lifetime and quantum efficiency, is covered. Finally, a discussion of emittance measurements of photoinjector systems and how the measurement is complicated by the non-thermal nature of the electron beam is presented

  12. High-brightness electron injectors

    International Nuclear Information System (INIS)

    Sheffield, R.L.

    1987-01-01

    Free-electron laser (FEL) oscillators and synchrotron light sources require pulse trains of high peak brightness and, in some applications, high-average power. Recent developments in the technology of photoemissive and thermionic electron sources in rf cavities for electron-linac injector applications offer promising advances over conventional electron injectors. Reduced emittance growth in high peak-current electron injectors may be achieved by using high field strengths and by linearizing the radial component of the cavity electric field at the expense of lower shunt impedance

  13. Carbon and tungsten effect on characteristics of sputtered and re-deposited beryllium target layers under deuteron bombardment

    International Nuclear Information System (INIS)

    Danelyan, L.S.; Gureev, V.M.; Elistratov, N.G.

    2004-01-01

    The behavior of the plasma facing Be-elements in the International Thermonuclear Experimental Reactor ITER will be affected by the re-deposition of other eroded plasma facing materials. The effect of carbon- and tungsten-additions on the microstructure, chemical composition and hydrogen isotope accumulation in the sputtered and re-deposited layers of beryllium TGP-56 at its interaction with 200 - 300 eV hydrogen isotope ions was studied in the MAGRAS facility equipped with a magnetron sputtering system. (author)

  14. Ion beam sputter implantation method

    International Nuclear Information System (INIS)

    King, W.J.

    1978-01-01

    By means of ion beam atomizing or sputtering an integrally composed coating, the composition of which continuously changes from 100% of the substrate to 100% of the coating, can be surfaced on a substrate (e.g. molten quartz on plastic lenses). In order to do this in the facility there is directed a primary beam of accelerated noble gas ions on a target from the group of the following materials: SiO 2 , Al 2 O 3 , Corning Glass 7070, Corning Glass 7740 or borosilicate glass. The particles leaving the target are directed on the substrate by means of an acceleration potential of up to 10 KV. There may, however, be coated also metal layers (Ni, Co) on a mylar film resulting in a semireflecting metal film. (RW) [de

  15. Implantation, recoil implantation, and sputtering

    International Nuclear Information System (INIS)

    Kelly, R.

    1984-01-01

    Underlying ion-beam modification of surfaces is the more basic subject of particle-surface interaction. The ideas can be grouped into forward and backward features, i.e. those affecting the interior of the target and those leading to particle expulsion. Forward effects include the stopping of the incident particles and the deposition of energy, both governed by integral equations which are easily set up but difficult to solve. Closely related is recoil implantation where emphasis is placed not on the stopping of the incident particles but on their interaction with target atoms with resulting implantation of these atoms. Backward effects, all of which are denoted as sputtering, are in general either of collisional, thermal, electronic, or exfoliational origin. (Auth.)

  16. Effects of ion sputtering on semiconductor surfaces

    International Nuclear Information System (INIS)

    McGuire, G.E.

    1978-01-01

    Ion beam sputtering has been combined with Auger spectroscopy to study the effects of ion beams on semiconductor surfaces. Observations on the mass dependence of ion selective sputtering of two component systems are presented. The effects of ion implantation are explained in terms of atomic dilution. Experimental data are presented that illustrate the super-position of selective sputtering and implantation effects on the surface composition. Sample reduction from electron and ion beam interaction is illustrated. Apparent sample changes which one might observe from the effects of residual gas contamination and electric fields are also discussed. (Auth.)

  17. Sensitivity and stability of sputtered sandwich photocells

    International Nuclear Information System (INIS)

    Murray, H.; Piel, A.

    1979-01-01

    The physical parameters of sputtered Metal-Semiconductor-Metal photocells are described in view of solar energy conversion. Specific properties of sputtered films lead to a particular stability of physical parameters such as dark conduction, capacitance and dielectric losses. Interband transitions occur when the photon energy is larger than the bandgap of the photoconductor. The transport of photo-excited carriers in the built-in electric field involves the existence of a photovoltaic effect. The influence of sputtering on the specific properties of solar energy conversion is discussed. (author)

  18. Alkali metal adsorbate sputtering by molecular impact

    International Nuclear Information System (INIS)

    Moran, J.P.; Wachman, H.Y.; Trilling, L.

    1974-01-01

    An exploratory study of the sputtering by a krypton molecular beam of rubidium adsorbed at low coverage on a tungsten substrate has been described in a previous paper. An extension of this work is reported now

  19. The Kansas State University revolving sputter source

    International Nuclear Information System (INIS)

    Tipping, T.N.

    1989-01-01

    It has been that the perfect ion source is one which runs in a very stable mode, runs continuously, and has the ability to change ion species without sacrificing the previous two requirements. This paper presents an approximation to the perfect ion source, the KSU Revolving Sputter Source. The source consists of an Aarhus-geometry sputter source with the addition of a rotating wheel which holds eight sputter cathodes. The wheel consists of a front plate with eight fixed Macor insulators and a back plate with eight Macor insulators held in place by the tension of eight springs. The cathode assembly consists of a copper cartridge with a threaded rod on one end and a sputter cathode with a threaded hole on the back. The cathode is screwed onto the cartridge and the whole assembly may be loaded into the wheel. A small spring on the side of the cartridge holds the assembly in the wheel

  20. Electrical resistivity of sputtered molybdenum films

    International Nuclear Information System (INIS)

    Nagano, J.

    1980-01-01

    The electrical resistivity of r.f. sputtered molybdenum films of thickness 5-150 nm deposited on oxidized silicon substrates was resolved into the three electron scattering components: isotropic background scattering, scattering at grain boundaries and scattering at surfaces. It was concluded that the isotropic background scattering is almost equal to that of bulk molybdenum and is not influenced by sputtering and annealing conditions. When the film thickness is sufficient that surface scattering can be ignored, the decrease in film resistivity after annealing is caused by the decrease in scattering at the grain boundaries for zero bias sputtered films, and is caused by an increase of the grain diameter for r.f. bias sputtered films. (Auth.)

  1. Large Area Sputter Coating on Glass

    Science.gov (United States)

    Katayama, Yoshihito

    Large glass has been used for commercial buildings, housings and vehicles for many years. Glass size for flat displays is getting larger and larger. The glass for the 8th generation is more than 5 m2 in area. Demand of the large glass is increasing not only in these markets but also in a solar cell market growing drastically. Therefore, large area coating is demanded to plus something else on glass more than ever. Sputtering and pyrolysis are the major coating methods on large glass today. Sputtering process is particularly popular because it can deposit a wide variety of materials in good coating uniformity on the glass. This paper describes typical industrial sputtering system and recent progress in sputtering technology. It also shows typical coated glass products in architectural, automotive and display fields and comments on their functions, film stacks and so on.

  2. Spatial distributions of Cu polycrystal sputtered atoms

    International Nuclear Information System (INIS)

    Abgaryan, V.K.; Semenov, A.A.; Shkarban, I.I.

    2004-01-01

    The results of the experimental determination of the Cu atoms spatial distribution, sputtered from the polycrystalline copper target, irradiated by the Xe + ions with the energy of 300 eV, are presented. The spatial distributions of the sputtered particles, calculated through the quasistable-dynamic model of the cascade modeling (CAMO) are presented also for the case of the polycrystalline copper irradiation by the Ar + and Xe + ions with the energy of 300-1000 eV [ru

  3. Sputtering of sodium on the planet Mercury

    Science.gov (United States)

    Mcgrath, M. A.; Johnson, R. E.; Lanzerotti, L. J.

    1986-01-01

    It is shown here that ion sputtering cannot account for the observed neutral sodium vapor column density on Mercury, but that it is an important loss mechanism for Na. Photons are likely to be the dominant stimulus, both directly through photodesorption and indirectly through thermal desorption of absorbed Na. It is concluded that the atmosphere produced is characterized by the planet's surface temperature, with the ion-sputtered Na contributing to a lesser, but more extended, component of the atmosphere.

  4. MD simulation of cluster formation during sputtering

    International Nuclear Information System (INIS)

    Muramoto, T.; Okai, M.; Yamashita, Y.; Yorizane, K.; Yamamura, Y.

    2001-01-01

    The cluster ejection due to cluster impact on a solid surface is studied through molecular dynamics (MD) simulations. Simulations are performed for Cu cluster impacts on the Cu(1 1 1) surface for cluster energy 100 eV/atom, and for clusters of 6, 13, 28 and 55 atoms. Interatomic interactions are described by the AMLJ-EAM potential. The vibration energy spectrum is independent of the incident cluster size and energy. This comes from the fact that sputtered clusters become stable through the successive fragmentation of nascent large sputtered clusters. The vibration energy spectra for large sputtered clusters have a peak, whose energy corresponds to the melting temperature of Cu. The exponent of the power-law fit of the abundance distribution and the total sputtering yield for the cluster impacts are higher than that for the monatomic ion impacts with the same total energy, where the exponent δ is given by Y n ∝n δ and Y n is the yield of sputtered n-atom cluster. The exponent δ follows a unified function of the total sputtering yield, which is a monotonic increase function, and it is nearly equal to δ ∼ -3 for larger yield

  5. Sputtering on cobalt with noble gas ions

    International Nuclear Information System (INIS)

    Sarholt-Kristensen, L.; Johansen, A.; Johnson, E.

    1983-01-01

    Single crystals of cobalt have been bombarded with 80 keV Ar + ions and with 80 keV and 200 keV Xe + ions in the [0001] direction of the hcp phase and the [111] direction of the fcc phase. The sputtering yield has been measured as function of target temperature (20 0 C-500 0 C), showing a reduction in sputtering yield for 80 keV Ar + ions and 200 keV Xe + ions, when the crystal structure changes from hcp to fcc. In contrast to this, bombardment with 80 keV Xe + ions results in an increase in sputtering yield as the phase transition is passed. Sputtering yields for [111] nickel are in agreement with the sputtering yields for fcc cobalt indicating normal behaviour of the fcc cobalt phase. The higher sputtering yield of [0001] cobalt for certain combinations of ion mass and energy may then be ascribed to disorder induced partly by martensitic phase transformation, partly by radiation damage. (orig.)

  6. The lowest surface brightness disc galaxy known

    International Nuclear Information System (INIS)

    Davies, J.I.; Phillipps, S.; Disney, M.J.

    1988-01-01

    The discovery of a galaxy with a prominent bulge and a dominant extremely low surface brightness disc component is reported. The profile of this galaxy is very similar to the recently discovered giant low surface brightness galaxy Malin 1. The disc central surface brightness is found to be ∼ 26.4 Rμ, some 1.5 mag fainter than Malin 1 and thus by far the lowest yet observed. (author)

  7. Increasing the Brightness of Light Sources

    OpenAIRE

    Fu, Ling

    2006-01-01

    In modern illumination systems, compact size and high brightness are important features. Light recycling allows an increase of the spectral radiance (brightness) emitted by a light source for the price of reducing the total radiant power. Light recycling means returning part of the emitted light to the source where part of it will escape absorption. As a result, the output brightness can be increased in a restricted phase space, ...

  8. Methods of optimization of reactive sputtering conditions of Al target during AlN films deposition

    Directory of Open Access Journals (Sweden)

    Chodun Rafal

    2015-12-01

    Full Text Available Encouraged by recent studies and considering the well-documented problems occurring during AlN synthesis, we have chosen two diagnostic methods which would enable us to fully control the process of synthesis and characterize the synthesized aluminum nitride films. In our experiment we have compared the results coming from OES measurements of plasma and circulating power characteristics of the power supply with basic features of the deposited layers. The dual magnetron system operating in AC mode was used in our studies. Processes of aluminum target sputtering were carried out in an atmosphere of a mixture of argon and nitrogen. The plasma emission spectra were measured with the use of a monochromator device. Analyses were made by comparing the positions and intensities of spectral lines of the plasma components. The results obtained allowed us to characterize the sputtering process under various conditions of gas mixture compositions as well as power distribution more precisely, which is reported in this work. The measured spectra were related to the deposition rate, the structure morphology of the films and chemical composition. Our work proved that the use of plasma OES and circulating power measurements make possible to control the process of sputtering and synthesis of deposited films in situ.

  9. ITO/InP solar cells: A comparison of devices fabricated by ion beam and RF sputtering of the ITO

    Science.gov (United States)

    Coutts, T. J.

    1987-01-01

    This work was performed with the view of elucidating the behavior of indium tin oxide/indium phosphide (ITO/InP) solar cells prepared by RF and ion beam sputtering. It was found that using RF sputter deposition of the ITO always leads to more efficient devices than ion beam sputter deposition. An important aspect of the former technique is the exposure of the single crystal p-InP substrates to a very low plasma power prior to deposition. Substrates treated in this manner have also been used for ion beam deposition of ITO. In this case the cells behave very similarly to the RF deposited cells, thus suggesting that the lower power plasma exposure (LPPE) is the crucial process step.

  10. Characteristics of ITO electrode grown by linear facing target sputtering with ladder type magnetic arrangement for organic light emitting diodes

    International Nuclear Information System (INIS)

    Jeong, Jin-A; Kim, Han-Ki; Lee, Jae-Young; Lee, Jung-Hwan; Bae, Hyo-Dae; Tak, Yoon-Heung

    2009-01-01

    The preparation and characteristics of indium tin oxide (ITO) electrodes grown using a specially designed linear facing target sputtering (LFTS) system with a ladder type magnet arrangement for organic light emitting diodes (OLED) are described. It was found that the electrical and optical properties of the ITO electrode were critically dependent on the Ar/O 2 flow ratio, while its structural and surface properties remained fairly constant regardless of the Ar/O 2 flow ratio, due to the low substrate temperature during the plasma damage-free sputtering. Under the optimized conditions, we obtained an ITO electrode with the lowest sheet resistance of 39.4 Ω/sq and high transmittance of 90.1% (550 nm wavelength) at room temperature. This suggests that LFTS is a promising low temperature and plasma damage free sputtering technology for preparing high-quality ITO electrodes for OLEDs and flexible OLEDs at room temperature.

  11. Deposition of thin films by magnetron sputtering molybdenum in samples of pure copper; Deposicao de filmes finos de molibdenio por magnetron sputtering em amostra de cobre puro

    Energy Technology Data Exchange (ETDEWEB)

    Ferreira, N.M.; Almeida, E.O. de; Alves Junior, C. [Universidade Federal do Rio Grande do Norte, Campus Universitario Lagoa Nova, PPGCEM - Natal, RN (Brazil); Lourenco, J.M. [Instituto Federal de Educacao, Ciencias e Tecnologia do Rio Grande do Norte (IFRN), Natal, RN (Brazil)

    2010-07-01

    The deposition surface is a process of thermochemical treatment, which involves the deposition of a thin film usually about one to two microns on a metallic substrate, which constitutes one of the most important surface engineering techniques. The plasma deposition process with the configuration of magnetron sputtering it is removing material from a solid surface (target) through the impact of energetic particles from plasma. The aim of this study is to characterize the microstructure of the material under study using the techniques of optical microscopy and scanning electron microscopy. (author)

  12. Enhanced oxidation of TiO.sub.2./sub. films prepared by high power impulse magnetron sputtering running in metallic mode

    Czech Academy of Sciences Publication Activity Database

    Straňák, V.; Kratochvíl, J.; Olejníček, Jiří; Kšírová, Petra; Sezemsky, P.; Čada, Martin; Hubička, Zdeněk

    2017-01-01

    Roč. 121, č. 17 (2017), s. 1-9, č. článku 171914. ISSN 0021-8979 R&D Projects: GA ČR(CZ) GA15-00863S Institutional support: RVO:68378271 Keywords : sputter deposition * plasma deposition * gas discharges * metallic thin films * probe plasma diagnostics Subject RIV: BL - Plasma and Gas Discharge Physics OBOR OECD: Fluids and plasma physics (including surface physics) Impact factor: 2.068, year: 2016

  13. Optical emission spectroscopy during fabrication of indium-tin-oxynitride films by RF-sputtering

    International Nuclear Information System (INIS)

    Koufaki, M.; Sifakis, M.; Iliopoulos, E.; Pelekanos, N.; Modreanu, M.; Cimalla, V.; Ecke, G.; Aperathitis, E.

    2006-01-01

    Indium-tin-oxide (ITO) and indium-tin-oxynitride (ITON) films have been deposited on glass by rf-sputtering from an ITO target, using Ar plasma and N 2 plasma, respectively, and different rf-power. Optical emission spectroscopy (OES) was employed to identify the species present in the plasma and to correlate them with the properties of the ITO and ITON thin films. Emission lines of ionic In could only be detected in N 2 plasma, whereas in the Ar plasma additional lines corresponding to atomic In and InO, were detected. The deposition rate of thin films was correlated with the In species, rather than the nitrogen species, emission intensity in the plasma. The higher resistivity and lower carrier concentration of the ITON films, as compared to the respective properties of the ITO films, were attributed to the incorporation of nitrogen, instead of oxygen, in the ITON structure

  14. The bright-bright and bright-dark mode coupling-based planar metamaterial for plasmonic EIT-like effect

    Science.gov (United States)

    Yu, Wei; Meng, Hongyun; Chen, Zhangjie; Li, Xianping; Zhang, Xing; Wang, Faqiang; Wei, Zhongchao; Tan, Chunhua; Huang, Xuguang; Li, Shuti

    2018-05-01

    In this paper, we propose a novel planar metamaterial structure for the electromagnetically induced transparency (EIT)-like effect, which consists of a split-ring resonator (SRR) and a pair of metal strips. The simulated results indicate that a single transparency window can be realized in the symmetry situation, which originates from the bright-bright mode coupling. Further, a dual-band EIT-like effect can be achieved in the asymmetry situation, which is due to the bright-bright mode coupling and bright-dark mode coupling, respectively. Different EIT-like effect can be simultaneously achieved in the proposed structure with the different situations. It is of certain significance for the study of EIT-like effect.

  15. Computer simulation of sputtering of graphite target in magnetron sputtering device with two zones of erosion

    Directory of Open Access Journals (Sweden)

    Bogdanov R.V.

    2015-03-01

    Full Text Available A computer simulation program for discharge in a magnetron sputtering device with two erosion zones was developed. Basic laws of the graphite target sputtering process and transport of sputtered material to the substrate were taken into account in the Monte Carlo code. The results of computer simulation for radial distributions of density and energy flux of carbon atoms on the substrate (at different values of discharge current and pressure of the working gas confirmed the possibility of obtaining qualitative homogeneous films using this magnetron sputtering device. Also the discharge modes were determined for this magnetron sputtering device, in which it was possible to obtain such energy and density of carbon atoms fluxes, which were suitable for deposition of carbon films containing carbon nanotubes and other nanoparticles.

  16. Rhodium coated mirrors deposited by magnetron sputtering for fusion applications

    International Nuclear Information System (INIS)

    Marot, L.; De Temmerman, G.; Oelhafen, P.; Covarel, G.; Litnovsky, A.

    2007-01-01

    Metallic mirrors will be essential components of all optical spectroscopy and imaging systems for ITER plasma diagnostics. Any change in the mirror performance, in particular, its reflectivity, due to erosion of the surface by charge exchange neutrals or deposition of impurities will influence the quality and reliability of the detected signals. Due to its high reflectivity in the visible wavelength range and its low sputtering yield, rhodium appears as an attractive material for first mirrors in ITER. However, the very high price of the raw material calls for using it in the form of a film deposited onto metallic substrates. The development of a reliable technique for the preparation of high reflectivity rhodium films is therefore of the highest importance. Rhodium layers with thicknesses of up to 2 μm were produced on different substrates of interest (Mo, stainless steel, Cu) by magnetron sputtering. Produced films exhibit a low roughness and crystallite size of about 10 nm with a dense columnar structure. No impurities were detected on the surface after deposition. Scratch tests demonstrate that adhesion properties increase with substrate hardness. Detailed optical characterizations of Rh-coated mirrors as well as results of erosion tests performed both under laboratory conditions and in the TEXTOR tokamak are presented in this paper

  17. Ga lithography in sputtered niobium for superconductive micro and nanowires

    International Nuclear Information System (INIS)

    Henry, M. David; Wolfley, Steve; Monson, Todd; Lewis, Rupert

    2014-01-01

    This work demonstrates the use of focused ion beam (FIB) implanted Ga as a lithographic mask for plasma etching of Nb films. Using a highly collimated Ga beam of a FIB, Nb is implanted 12 nm deep with a 14 nm thick Ga layer providing etch selectivity better than 15:1 with fluorine based etch chemistry. Implanted square test patterns, both 10 μm by 10 μm and 100 μm by 100 μm, demonstrate that doses above than 7.5 × 10 15  cm −2 at 30 kV provide adequate mask protection for a 205 nm thick, sputtered Nb film. The resolution of this dry lithographic technique is demonstrated by fabrication of nanowires 75 nm wide by 10 μm long connected to 50 μm wide contact pads. The residual resistance ratio of patterned Nb films was 3. The superconducting transition temperature (T c ) = 7.7 K was measured using a magnetic properties measurement system. This nanoscale, dry lithographic technique was extended to sputtered TiN and Ta here and could be used on other fluorine etched superconductors such as NbN, NbSi, and NbTi.

  18. Brightness and darkness as perceptual dimensions

    NARCIS (Netherlands)

    Vladusich, T.; Lucassen, M.P.; Cornelissen, F.W.

    2007-01-01

    A common-sense assumption concerning visual perception states that brightness and darkness cannot coexist at a given spatial location. One corollary of this assumption is that achromatic colors, or perceived grey shades, are contained in a one-dimensional (1-D) space varying from bright to dark. The

  19. SURFACE PHOTOMETRY OF LOW SURFACE BRIGHTNESS GALAXIES

    NARCIS (Netherlands)

    DEBLOK, WJG; VANDERHULST, JM; BOTHUN, GD

    1995-01-01

    Low surface brightness (LSB) galaxies are galaxies dominated by an exponential disc whose central surface brightness is much fainter than the value of mu(B)(0) = 21.65 +/- 0.30 mag arcsec(-2) found by Freeman. In this paper we present broadband photometry of a sample of 21 late-type LSB galaxies.

  20. Particle-balance models for pulsed sputtering magnetrons

    Science.gov (United States)

    Huo, Chunqing; Lundin, D.; Gudmundsson, J. T.; Raadu, M. A.; Bradley, J. W.; Brenning, N.

    2017-09-01

    The time-dependent plasma discharge ionization region model (IRM) has been under continuous development during the past decade and used in several studies of the ionization region of high-power impulse magnetron sputtering (HiPIMS) discharges. In the present work, a complete description of the most recent version of the IRM is given, which includes improvements, such as allowing for returning of the working gas atoms from the target, a separate treatment of hot secondary electrons, addition of doubly charged metal ions, etc. To show the general applicability of the IRM, two different HiPIMS discharges are investigated. The first set concerns 400 μs long discharge pulses applied to an Al target in an Ar atmosphere at 1.8 Pa. The second set focuses on 100 μs long discharge pulses applied to a Ti target in an Ar atmosphere at 0.54 Pa, and explores the effects of varying the magnetic field strength. The model results show that Al2+ -ions contribute negligibly to the production of secondary electrons, while Ti2+ -ions effectively contribute to the production of secondary electrons. Similarly, the model results show that for an argon discharge with Al target the contribution of Al+-ions to the discharge current at the target surface is over 90% at 800 V. However, at 400 V the Al+-ions and Ar+-ions contribute roughly equally to the discharge current in the initial peak, while in the plateau region Ar+-ions contribute to roughly \\frac{2}{3} of the current. For high currents the discharge with Al target develops almost pure self-sputter recycling, while the discharge with Ti target exhibits close to a 50/50 combination of self-sputter recycling and working gas-recycling. For a Ti target, a self-sputter yield significantly below unity makes working gas-recycling necessary at high currents. For the discharge with Ti target, a decrease in the B-field strength, resulted in a corresponding stepwise increase in the discharge resistivity.

  1. Brightness Alteration with Interweaving Contours

    Directory of Open Access Journals (Sweden)

    Sergio Roncato

    2012-12-01

    Full Text Available Chromatic induction is observed whenever the perceived colour of a target surface shifts towards the hue of a neighbouring surface. Some vivid manifestations may be seen in a white background where thin coloured lines have been drawn (assimilation or when lines of different colours are collinear (neon effect or adjacent (watercolour to each other. This study examines a particular colour induction that manifests in concomitance with an opposite effect of colour saturation (or anti-spread. The two phenomena can be observed when a repetitive pattern is drawn in which outline thin contours intercept wider contours or surfaces, colour spreading appear to fill the surface occupied by surfaces or thick lines whereas the background traversed by thin lines is seen as brighter or filled of a saturated white. These phenomena were first observed by Bozzi (1975 and Kanizsa (1979 in figural conditions that did not allow them to document their conjunction. Here we illustrate various manifestations of this twofold phenomenon and compare its effects with the known effects of brightness and colour induction. Some conjectures on the nature of these effects are discussed.

  2. Electronic sputtering of large organic molecules and its application in bio molecular mass spectrometry

    International Nuclear Information System (INIS)

    Sundqvist, B.U.R.

    1992-01-01

    This is a review of research which has its origin in the discovery of Plasma Desorption Mass Spectrometry (PDMS). Two main fields of research have developed, namely fundamental studies of the ejection process at fast ion impact and studies of applications of the new mass spectrometric technique. In this review the emphasis will be on the process of electronic sputtering of organic solids but also applications of this process in bio molecular mass spectrometry will be discussed. (author)

  3. Preparation of CIGS thin films by HiPIMS or DC sputtering and various selenization processes

    Czech Academy of Sciences Publication Activity Database

    Olejníček, Jiří; Hubička, Zdeněk; Kšírová, Petra; Kment, Štěpán; Brunclíková, Michaela; Kohout, Michal; Čada, Martin; Darveau, S.A.; Exstrom, C.L.

    2013-01-01

    Roč. 16, č. 2 (2013), s. 314-319 ISSN 1203-8407 R&D Projects: GA MŠk LH12045 Institutional support: RVO:68378271 Keywords : CIGS * HIPIMS * selenization * nanocrystals * solar energy * sputtering * thin films Subject RIV: BL - Plasma and Gas Discharge Physics Impact factor: 1.106, year: 2013 http://www.ingentaconnect.com/content/stn/jaots/2013/00000016/00000002/art00015

  4. Computer simulation of sputtering: A review

    International Nuclear Information System (INIS)

    Robinson, M.T.; Hou, M.

    1992-08-01

    In 1986, H. H. Andersen reviewed attempts to understand sputtering by computer simulation and identified several areas where further research was needed: potential energy functions for molecular dynamics (MD) modelling; the role of inelastic effects on sputtering, especially near the target surface; the modelling of surface binding in models based on the binary collision approximation (BCA); aspects of cluster emission in MD models; and angular distributions of sputtered particles. To these may be added kinetic energy distributions of sputtered particles and the relationships between MD and BCA models, as well as the development of intermediate models. Many of these topics are discussed. Recent advances in BCA modelling include the explicit evaluation of the time in strict BCA codes and the development of intermediate codes able to simulate certain many-particle problems realistically. Developments in MD modelling include the wide-spread use of many-body potentials in sputtering calculations, inclusion of realistic electron excitation and electron-phonon interactions, and several studies of cluster ion impacts on solid surfaces

  5. Particle porosity at plasma are spraying of metals

    International Nuclear Information System (INIS)

    Petrunichev, V.A.; Koroleva, E.B.; Pushilin, N.P.

    1985-01-01

    Quantitative dependences of porosity and character of pore distribution in particles of different materials on particle size and composition of atmosphere in a working chamber are studied experimentally as applied to the process of plasma wire sputtering. Wires 1.2 mm in diameter made of tungsten, molybdenum, Kh20N80 alloy, and zirconium served as sputtering materials. It is shown that pore size and character of their distribution in particles of powders obtained by the method of plasma wire sputtering are dependent on sizes of forming particles and determined by conditions of their cooling. Intensive porosity formation is characteristic of wire sputtering in argon plasma with nitrogen additions, but there are critical values of nitrogen concentration in plasma, above which intensive porosity formation in forming particles stops

  6. RF magnetron sputtering of polypropylene

    Czech Academy of Sciences Publication Activity Database

    Stelmashuk, Vitaliy; Biederman, H.; Slavinská, D.; Trchová, Miroslava; Hlídek, P.

    2004-01-01

    Roč. 75, č. 3 (2004), s. 207-215 ISSN 0042-207X R&D Projects: GA MŠk ME 553; GA MŠk ME 554 Institutional research plan: CEZ:AV0Z2043910 Keywords : materials science, multidisciplinary, physics, applied Subject RIV: BL - Plasma and Gas Discharge Physics Impact factor: 0.902, year: 2004

  7. Bibliography on plasma-wall interactions

    International Nuclear Information System (INIS)

    Okano, J.

    1980-05-01

    Bibliography is compiled for the following subjects: (1) Plasma-wall interactions, general, (2) Sputtering, (3) Chemical sputtering, (4) Blistering, (5) Electron-impact desorption, (6) Thermal desorption and photo-desorption, (7) Emission of secondary electrons and ions, emission of photoelectrons, and material for getters, (8) Gas release and trapping, (9) Approach from surface diagnostics (review). The compilation has not been intended to be complete, but to give a first step toward a further study of the respective subjects. (author)

  8. Thin films preparation of the Ti-Al-O system by rf-sputtering;Preparacion de peliculas delgadas del sistema Ti-Al-O mediante rf-sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Montes de Oca, J. A.; Ceballos A, J.; Galaviz P, J. [IPN, Centro de Investigacion en Ciencia Aplicada y Tecnologia Avanzada, Unidad Altamira, Km 14.5 Carretera Tampico-Puerto Industrial Altamira, 89600 Altamira, Tamaulipas (Mexico); Manaud, J. P.; Lahaye, M. [Centre National de la Recherche Scientifique, Institut de Chimie de la Matiere Condensee, Universite Bordeaux I, 87, Av. du Dr. Schweitzer, F-33608 Pessac-Cedex (France); Munoz S, J., E-mail: jmontedeocacv@ipn.m [IPN, Centro de Investigacion y de Estudios Avanzados, Unidad Queretaro, Libramiento Norponiente No. 2000, Fracc. Real de Juriquilla, 76230 Santiago de Queretaro, Qro. (Mexico)

    2010-07-01

    In the present work Ti-Al-O thin films were synthesized by rf-sputtering technique on glass and silicon (Si) substrates using Ti Al and Ti{sub 3}Al targets in a sputtering chamber with an Ar-O{sub 2} atmosphere. Ti-Al-O thin films were obtained varying experimental parameters such as oxygen percent fed to the reaction chamber, plasma power density and substrate temperature. The films deposited on glass substrates were used to evaluate their optical properties, while those deposited on Si substrates were used to evaluate mechanical and morphological properties. The crystalline structure, morphology, chemical composition and optical properties of the films were evaluated by X-ray diffraction, high-resolution scanning electron microscopy, Auger electron microscopy and visible UV spectroscopy. Films thicknesses were measured using a profiler. The roughness and mechanical properties such as hardness and Young modulus were analyzed by atomic force microscopy and nano indentation technique, respectively. (Author)

  9. Nylon-sputtered nanoparticles: fabrication and basic properties

    Science.gov (United States)

    Polonskyi, O.; Kylián, O.; Solař, P.; Artemenko, A.; Kousal, J.; Slavínská, D.; Choukourov, A.; Biederman, H.

    2012-12-01

    Nylon-sputtered nanoparticles were prepared using a simple gas aggregation cluster source based on a planar magnetron (Haberland type) and equipped with a nylon target. Plasma polymer particles originated in an aggregation chamber and travelled to a main (deposition) chamber with a gas flow through an orifice. The deposited nanoparticles were observed to have a cauliflower-like structure. The nanoparticles were found to be nitrogen-rich with N/C ratio close to 0.5. An increase in rf power from 60 to 100 W resulted in a decrease in mean particle size from 210 to 168 nm whereas an increase in their residence time in the cluster source from 0.7 to 4.6 s resulted in an increase in the size from 73 to 231 nm.

  10. In vitro behaviour of nanocrystalline silver-sputtered thin films

    International Nuclear Information System (INIS)

    Piedade, A P; Vieira, M T; Martins, A; Silva, F

    2007-01-01

    Silver thin films were deposited with different preferential orientations and special attention was paid to the bioreactivity of the surfaces. The study was essentially focused on the evaluation of the films by x-ray diffraction (XRD), atomic force microscopy (AFM), high-resolution transmission electron microscopy (HRTEM), electron probe microanalysis (EPMA) and contact angle measurements. The deposited thin films were characterized before and after immersion in S-enriched simulated human plasma in order to estimate the influence of the preferential crystallographic orientation on the in vitro behaviour. Silver thin films with and without (111) preferential crystallographic orientation were deposited by r.f. magnetron sputtering to yield nanocrystalline coatings, high compact structures, very hydrophobic surfaces and low roughness. These properties reduce the chemisorption of reactive species onto the film surface. The in vitro tests indicate that silver thin films can be used as coatings for biomaterials applications

  11. Molecular dynamics simulation of gold cluster growth during sputter deposition

    Energy Technology Data Exchange (ETDEWEB)

    Abraham, J. W., E-mail: abraham@theo-physik.uni-kiel.de; Bonitz, M., E-mail: bonitz@theo-physik.uni-kiel.de [Institut für Theoretische Physik und Astrophysik, Christian-Albrechts-Universität zu Kiel, Leibnizstraße 15, D-24098 Kiel (Germany); Strunskus, T.; Faupel, F. [Institut für Materialwissenschaft, Lehrstuhl für Materialverbunde, Christian-Albrechts-Universität zu Kiel, Kaiserstraße 2, D-24143 Kiel (Germany)

    2016-05-14

    We present a molecular dynamics simulation scheme that we apply to study the time evolution of the self-organized growth process of metal cluster assemblies formed by sputter-deposited gold atoms on a planar surface. The simulation model incorporates the characteristics of the plasma-assisted deposition process and allows for an investigation over a wide range of deposition parameters. It is used to obtain data for the cluster properties which can directly be compared with recently published experimental data for gold on polystyrene [M. Schwartzkopf et al., ACS Appl. Mater. Interfaces 7, 13547 (2015)]. While good agreement is found between the two, the simulations additionally provide valuable time-dependent real-space data of the surface morphology, some of whose details are hidden in the reciprocal-space scattering images that were used for the experimental analysis.

  12. Physical sputtering of metallic systems by charged-particle impact

    International Nuclear Information System (INIS)

    Lam, N.Q.

    1989-12-01

    The present paper provides a brief overview of our current understanding of physical sputtering by charged-particle impact, with the emphasis on sputtering of metals and alloys under bombardment with particles that produce knock-on collisions. Fundamental aspects of ion-solid interactions, and recent developments in the study of sputtering of elemental targets and preferential sputtering in multicomponent materials are reviewed. We concentrate only on a few specific topics of sputter emission, including the various properties of the sputtered flux and depth of origin, and on connections between sputtering and other radiation-induced and -enhanced phenomena that modify the near-surface composition of the target. The synergistic effects of these diverse processes in changing the composition of the integrated sputtered-atom flux is described in simple physical terms, using selected examples of recent important progress. 325 refs., 27 figs

  13. Influence of reactive oxygen species during deposition of iron oxide films by high power impulse magnetron sputtering

    Czech Academy of Sciences Publication Activity Database

    Straňák, V.; Hubička, Zdeněk; Čada, Martin; Bogdanowicz, R.; Wulff, H.; Helm, C.A.; Hippler, R.

    2018-01-01

    Roč. 51, č. 9 (2018), s. 1-12, č. článku 095205. ISSN 0022-3727 R&D Projects: GA ČR GA17-08389S Institutional support: RVO:68378271 Keywords : high power impulse magnetron sputtering (HiPIMS) * iron oxide thin films * wüstite * magnetite * maghemite * hematite Subject RIV: BL - Plasma and Gas Discharge Physics OBOR OECD: Fluids and plasma physics (including surface physics ) Impact factor: 2.588, year: 2016

  14. Enhanced saturation of sputtered amorphous SiN film frameworks using He- and Ne-Penning effects

    Science.gov (United States)

    Sugimoto, Iwao; Nakano, Satoko; Kuwano, Hiroki

    1994-06-01

    Optical emission spectroscopy reveals that helium and neon gases enhance the nitridation reactivity of the nitrogen plasma by Penning effects during magnetron sputtering of the silicon target. These excited nitrogen plasmas promote the saturation of frameworks of the resultant silicon nitride films. X-ray photoelectron spectroscopy, electron spin resonance, and x-ray diffraction analyses provide insight into the structure of these films, and thermal desorption mass spectroscopy reveals the behavior of volatile species in these films.

  15. Quantitative sputter profiling at surfaces and interfaces

    International Nuclear Information System (INIS)

    Kirschner, J.; Etzkorn, H.W.

    1981-01-01

    The key problem in quantitative sputter profiling, that of a sliding depth scale has been solved by combined Auger/X-ray microanalysis. By means of this technique and for the model system Ge/Si (amorphous) the following questions are treated quantitatively: shape of the sputter profiles when sputtering through an interface and origin of their asymmetry; precise location of the interface plane on the depth profile; broadening effects due to limited depth of information and their correction; origin and amount of bombardment induced broadening for different primary ions and energies; depth dependence of the broadening, and basic limits to depth resolution. Comparisons are made to recent theoretical calculations based on recoil mixing in the collision cascade and very good agreement is found

  16. Sputtering and mixing of supported nanoparticles

    International Nuclear Information System (INIS)

    Jiménez-Sáez, J.C.; Pérez-Martín, A.M.C.; Jiménez-Rodríguez, J.J.

    2013-01-01

    Sputtering and mixing of Co nanoparticles supported in Cu(0 0 1) under 1-keV argon bombardment are studied using molecular-dynamics simulations. Particles of different initial size have been considered. The cluster height decreases exponentially with increasing fluence. In nanoparticles, sputtering yield is significantly enhanced compared to bulk. In fact, the value of this magnitude depends on the cluster height. A theoretical model for sputtering is introduced with acceptable results compared to those obtained by simulation. Discrepancies happen mainly for very small particles. Mixing rate at the interface is quantified; and besides, the influence of border effects for clusters of different initial size is assessed. Mixing rate and border length–surface area ratio for the initial interface show a proportionality relation. The phenomenon of ion-induced burrowing of metallic nanoparticles is analysed

  17. Sputtering as a means of depth profiling

    International Nuclear Information System (INIS)

    Whitton, J.L.

    1978-01-01

    Probably the most common technique for determination of depth profiles by sputtering is that of secondary ion mass spectrometry. Many problems occur in the important step of converting the time (of sputtering) scale to a depth scale and these problems arise before the secondary ions are ejected. An attempt is made to present a comprehensive list of the effects that should be taken into consideration in the use of sputtering as a means of depth profiling. The various parameters liable to affect the depth profile measurements are listed in four sections: beam conditions; target conditions; experimental environment; and beam-target interactions. The effects are discussed and where interplay occurs, cross-reference is made and examples are provided where possible. (B.R.H.)

  18. Bright Sparks of Our Future!

    Science.gov (United States)

    Riordan, Naoimh

    2016-04-01

    My name is Naoimh Riordan and I am the Vice Principal of Rockboro Primary School in Cork City, South of Ireland. I am a full time class primary teacher and I teach 4th class, my students are aged between 9-10 years. My passion for education has developed over the years and grown towards STEM (Science, Technology, Engineering and Mathematics) subjects. I believe these subjects are the way forward for our future. My passion and beliefs are driven by the unique after school programme that I have developed. It is titled "Sparks" coming from the term Bright Sparks. "Sparks" is an after school programme with a difference where the STEM subjects are concentrated on through lessons such as Science, Veterinary Science Computer Animation /Coding, Eco engineering, Robotics, Magical Maths, Chess and Creative Writing. All these subjects are taught through activity based learning and are one-hour long each week for a ten-week term. "Sparks" is fully inclusive and non-selective which gives all students of any level of ability an opportunity to engage into these subjects. "Sparks" is open to all primary students in County Cork. The "Sparks" after school programme is taught by tutors from the different Universities and Colleges in Cork City. It works very well because the tutor brings their knowledge, skills and specialised equipment from their respective universities and in turn the tutor gains invaluable teaching practise, can trial a pilot programme in a chosen STEM subject and gain an insight into what works in the physical classroom.

  19. Designers predict a bright future

    International Nuclear Information System (INIS)

    Statton, T.D.

    1996-01-01

    As power plant designers and builders, there is a bright future for the industry. The demand for electricity will continue to grow, and the need for new plants will increase accordingly. But companies that develop and supply these plants must adapt to new ways of doing business if they expect to see the dawn of this new age. Several factors will have a profound effect on the generation and use of electricity in future years. Instant communications now reach all corners of the globe, making people everywhere aspire to a higher standard of living. The economic surge needed to satisfy these appetites will, in turn, be fed by a network of suppliers who are themselves restructuring to serve global markets, unimpeded by past nationalistic barriers to trade. The strong correlation between economic progress and the growing demand for electricity is well recognized. A ready supply of affordable electricity is a necessary underpinning for any economic expansion. As economies advance and jobs increase, electric demand grows geometrically, fueled by an ever-improving quality of life. Coupled with increasing demand is the worldwide trend toward privatization of the generation industry. The reasons may vary in different parts of the world, but the effect is the same--companies are battling intensely for the right to build or purchase generating facilities. Those companies, like the industry they serve, are themselves in a period of transition. Once a closed, monopolistic group of owners in a predominantly services-based market, they are, thanks to competitive forces, being driven steadily toward a product-based structure

  20. Sputtering yield calculation for binary target

    International Nuclear Information System (INIS)

    Jimenez-Rodriguez, J.J.; Rodriguez-Vidal, M.; Valles-Abarca, J.A.

    1979-01-01

    The generalization for binary targets, of the ideas proposed by Sigmund for monoatomic targets, leads to a set of coupled intergrodifferential equations for the sputtering functions. After moment decomposition, the final formulae are obtained by the standard method based on the Laplace Transform, where the inverse transform is made with the aid of asymptotic expansions in the limit of very high projectile energy as compared to the surface binding energy. The possible loss of stoichiometry for binary targets is analyzed. Comparison of computed values of sputtering yield for normal incidence, with experimental results shows good agreement. (author)

  1. Dependence of sputtering coefficient on ion dose

    International Nuclear Information System (INIS)

    Colligon, J.S.; Patel, M.H.

    1977-01-01

    The sputtering coefficient of polycrystalline gold bombarded by 10-40 keV Ar + ions had been measured as a function of total ion dose and shown to exhibit oscillations in magnitude between 30 and 100%. Possible experimental errors which would give rise to such an oscillation have been considered, but it is apparent that these factors are unable to explain the measurements. It is proposed that a change in the Sublimation Energy associated with either bulk damage or formation of surface topographical features arising during ion bombardment may be responsible for the observed variations in sputtering coefficient. (author)

  2. Carbonaceous Particles Production in a Sputtering Discharge

    International Nuclear Information System (INIS)

    Dominique, Claire; Sant, Marco; Arnas, Cecile

    2005-01-01

    Spherical dust particles have been produced in argon glow discharge by sputtering of a graphite cathode. Their size varies from 40 to 200 nm depending on the distance between the two electrodes and the largest ones have a cauliflower shape. Simulations giving the evolution of the energy distribution of sputtered carbon atoms suggest a mechanism of growth by carbon vapour condensation. The chemical composition and structure of particles have been investigated by infrared spectroscopy and appear to be a complex arrangement of the carbon atoms and hetero-atoms

  3. Experimental investigation of the energy and temperature dependence of beryllium self sputtering

    International Nuclear Information System (INIS)

    Korshunov, S.N.; Guseva, M.I.; Stolijarova, V.G.

    1995-01-01

    The low-Z metal beryllium is considered as plasma facing material (PFM) for the ITER. It is expected that operation temperature range of beryllium PFM will be (670 - 1070) K. While experimental Be-sputtering data bases exist for H + , D + and He + -ions, the self-sputtering yields of Be have only been estimated by computer simulation. In this paper we report the experimental results on the energy and temperature dependence of the beryllium self-sputtering yield (S). The energy dependence of S s in the energy range (0.5 - 10.0) keV was measured at 670 K. The self-sputtering yield of Be attains its maximal value at the ion energy of 1.5 keV, being equal to 0.32 ± at./ion. Comparison of the experimental results and theoretical prediction shows a good agreement for energy dependence of S s . The temperature dependence of S s in the temperature range (370-1070)K was obtained for 0.9keV Be + -ions. The value of S s is not changed up to 870 K. It sharply increases at the temperatures above 870 attaining the value of 0.75 at./ion at 1070 K

  4. A review of basic phenomena and techniques for sputter-deposition of high temperature superconducting films

    Energy Technology Data Exchange (ETDEWEB)

    Auciello, O. (Microelectronics Center of North Carolina, Research Triangle Park, NC (USA) North Carolina State Univ., Raleigh, NC (USA). Dept. of Materials Science and Engineering); Ameen, M.S.; Kingon, A.I.; Lichtenwalner, D.J. (North Carolina State Univ., Raleigh, NC (USA). Dept. of Materials Science and Engineering); Krauss, A.R. (Argonne National Lab., IL (USA))

    1990-01-01

    The processes involved in plasma and ion beam sputter-deposition of high temperature superconducting thin films are critically reviewed. Recent advances in the development of these techniques are discussed in relation to basic physical phenomena, specific to each technique, which must be understood before high quality films can be produced. Control of film composition is a major issue in sputter-deposition of multicomponent materials. Low temperature processing of films is a common goal for each technique, particularly in relation to integrating high temperature superconducting films with the current microelectronics technology. It has been understood for some time that for Y{sub 1}Ba{sub 2}Cu{sub 3}O{sub 7} deposition, the most intensely studied high-{Tc} compound, incorporation of sufficient oxygen into the film during deposition is necessary to produce as-deposited superconducting films at relatively substrate temperatures. Recent results have shown that with the use of suitable buffer layers, high quality Y{sub 1}Ba{sub 2}Cu{sub 3}O{sub 7} sputtered films can be obtained on Si substrates without the need for post-deposition anneal processing. This review is mainly focussed on issues related to sputter-deposition of Y{sub 1}Ba{sub 2}Cu{sub 3}O{sub 7} thin films, although representative results concerning the bismuth and thallium based compounds are included. 143 refs., 11 figs.

  5. Reactive sputtering of TiN films at large substrate to target distances

    International Nuclear Information System (INIS)

    Musil, J.; Kadlec, S.

    1990-01-01

    This paper is a critical review of the present status of the magnetron ion sputter plating of thin CiN films. Thus different possibilities of extracting high ion currents 1 s from the magnetron discharge to substrates located not only at standard target to substrate distances d S-T of about 50 mm but also at larger distances d S-T are discussed in detail. Special attention is devoted to magnetron sputtering systems with enhanced ionization, to plasma confinement in the magnetron sputtering systems and to the discharge characteristics of an unbalanced magnetron (UM). It is shown that a UM can be operated in the regime of a double-site-sustained discharge (DSSD) and in this case large 1 s can be extracted to substrates located in large D S-T of about 200 mm and even at high pressures p = 5 Pa. A physical comparison of the conventional magnetron (CM), UM and DSSD is also given. Considerable attention is also devoted to the effect of ion bombardment on properties of TiN films created in the sputtering system using DSSD. (author)

  6. On the phase formation of sputtered hafnium oxide and oxynitride films

    International Nuclear Information System (INIS)

    Sarakinos, K.; Music, D.; Mraz, S.; Baben, M. to; Jiang, K.; Nahif, F.; Braun, A.; Zilkens, C.; Schneider, J. M.; Konstantinidis, S.; Renaux, F.; Cossement, D.; Munnik, F.

    2010-01-01

    Hafnium oxynitride films are deposited from a Hf target employing direct current magnetron sputtering in an Ar-O 2 -N 2 atmosphere. It is shown that the presence of N 2 allows for the stabilization of the transition zone between the metallic and the compound sputtering mode enabling deposition of films at well defined conditions of target coverage by varying the O 2 partial pressure. Plasma analysis reveals that this experimental strategy facilitates control over the flux of the O - ions which are generated on the oxidized target surface and accelerated by the negative target potential toward the growing film. An arrangement that enables film growth without O - ion bombardment is also implemented. Moreover, stabilization of the transition sputtering zone and control of the O - ion flux without N 2 addition is achieved employing high power pulsed magnetron sputtering. Structural characterization of the deposited films unambiguously proves that the phase formation of hafnium oxide and hafnium oxynitride films with the crystal structure of HfO 2 is independent from the O - bombardment conditions. Experimental and theoretical data indicate that the presence of vacancies and/or the substitution of O by N atoms in the nonmetal sublattice favor the formation of the cubic and/or the tetragonal HfO 2 crystal structure at the expense of the monoclinic HfO 2 one.

  7. The Physics and Applications of High Brightness Electron Beams

    Science.gov (United States)

    Palumbo, Luigi; Rosenzweig, J.; Serafini, Luca

    2007-09-01

    Plenary sessions. RF deflector based sub-Ps beam diagnostics: application to FEL and advanced accelerators / D. Alesini. Production of fermtosecond pulses and micron beam spots for high brightness electron beam applications / S.G. Anderson ... [et al.]. Wakefields of sub-picosecond electron bunches / K.L.F. Bane. Diamond secondary emitter / I. Ben-Zvi ... [et al.]. Parametric optimization for an X-ray free electron laser with a laser wiggler / R. Bonifacio, N. Piovella and M.M. Cola. Needle cathodes for high-brightness beams / C.H. Boulware ... [et al.]. Non linear evolution of short pulses in FEL cascaded undulators and the FEL harmonic cascade / L. Giannessi and P. Musumeci. High brightness laser induced multi-meV electron/proton sources / D. Giulietti ... [et al.]. Emittance limitation of a conditioned beam in a strong focusing FEL undulator / Z. Huang, G. Stupakov and S. Reiche. Scaled models: space-charge dominated electron storage rings / R.A. Kishek ... [et al.]. High brightness beam applications: energy recovered linacs / G.A. Krafft. Maximizing brightness in photoinjectors / C. Limborg-Deprey and H. Tomizawa. Ultracold electron sources / O.J. Luiten ... [et al.]. Scaling laws of structure-based optical accelerators / A. Mizrahi, V. Karagodsky and L. Schächter. High brightness beams-applications to free-electron lasers / S. Reiche. Conception of photo-injectors for the CTF3 experiment / R. Roux. Superconducting RF photoinjectors: an overview / J. Sekutowicz. Status and perspectives of photo injector developments for high brightness beams / F. Stephan. Results from the UCLA/FNLP underdense plasma lens experiment / M.C. Thompson ... [et al.]. Medical application of multi-beam compton scattering monochromatic tunable hard X-ray source / M. Uesaka ... [et al.]. Design of a 2 kA, 30 fs RF-photoinjector for waterbag compression / S.B. Van Der Geer, O.J. Luiten and M.J. De Loos. Proposal for a high-brightness pulsed electron source / M. Zolotorev ... [et al

  8. Bright boys the making of information technology

    CERN Document Server

    Green, Tom

    2010-01-01

    Everything has a beginning. None was more profound-and quite as unexpected-than Information Technology. Here for the first time is the untold story of how our new age came to be and the bright boys who made it happen. What began on the bare floor of an old laundry building eventually grew to rival in size the Manhattan Project. The unexpected consequence of that journey was huge---what we now know as Information Technology. For sixty years the bright boys have been totally anonymous while their achievements have become a way of life for all of us. "Bright Boys" brings them home. By 1950 they'd

  9. Time-resolved brightness measurements by streaking

    Science.gov (United States)

    Torrance, Joshua S.; Speirs, Rory W.; McCulloch, Andrew J.; Scholten, Robert E.

    2018-03-01

    Brightness is a key figure of merit for charged particle beams, and time-resolved brightness measurements can elucidate the processes involved in beam creation and manipulation. Here we report on a simple, robust, and widely applicable method for the measurement of beam brightness with temporal resolution by streaking one-dimensional pepperpots, and demonstrate the technique to characterize electron bunches produced from a cold-atom electron source. We demonstrate brightness measurements with 145 ps temporal resolution and a minimum resolvable emittance of 40 nm rad. This technique provides an efficient method of exploring source parameters and will prove useful for examining the efficacy of techniques to counter space-charge expansion, a critical hurdle to achieving single-shot imaging of atomic scale targets.

  10. BrightStat.com: free statistics online.

    Science.gov (United States)

    Stricker, Daniel

    2008-10-01

    Powerful software for statistical analysis is expensive. Here I present BrightStat, a statistical software running on the Internet which is free of charge. BrightStat's goals, its main capabilities and functionalities are outlined. Three different sample runs, a Friedman test, a chi-square test, and a step-wise multiple regression are presented. The results obtained by BrightStat are compared with results computed by SPSS, one of the global leader in providing statistical software, and VassarStats, a collection of scripts for data analysis running on the Internet. Elementary statistics is an inherent part of academic education and BrightStat is an alternative to commercial products.

  11. Bright THz Instrument and Nonlinear THz Science

    Science.gov (United States)

    2017-10-30

    Report: Bright THz Instrument and Nonlinear THz Science The views, opinions and/or findings contained in this report are those of the author(s) and...Number: W911NF-16-1-0436 Organization: University of Rochester Title: Bright THz Instrument and Nonlinear THz Science Report Term: 0-Other Email: xi...exploring new cutting-edge research and broader applications, following the significant development of THz science and technology in the late 80’s, is the

  12. The surface brightness of spiral galaxies

    International Nuclear Information System (INIS)

    Phillipps, S.; Disney, M.

    1983-01-01

    It is proposed that Freeman's discovery that the extrapolated central surface brightness of spiral galaxies is approximately constant can be simply explained if the galaxies contain a spheroidal component which dominates the light in their outer isophotes. Calculations of an effective central surface brightness indicate a wide spread of values. This requires either a wide spread in disc properties or significant spheroidal components or, most probably, both. (author)

  13. The surface brightness of spiral galaxies

    International Nuclear Information System (INIS)

    Disney, M.; Phillipps, S.

    1985-01-01

    The intrinsic surface brightness Ssub(e) of 500 disc galaxies (0<=T<=9) drawn from the Second Reference Catalogue is computed and it is shown that Ssub(e) does not correlate significantly with Msub(B), (B-V) or type. This is consistent with the notion that there is a heavy selection bias in favour of disc galaxies with that particular surface brightness which allows inclusion in the catalogue over the largest volume of space. (author)

  14. KRYPTON INCORPORATION IN SPUTTERED SILICON FILMS

    NARCIS (Netherlands)

    GREUTER, MJW; NIESEN, L; HAKVOORT, RA; DEROODE, J; VANVEEN, A; BERNTSEN, AJM; SLOOF, WG

    1993-01-01

    The incorporation of Kr in sputtered a-Si films has been investigated in a systematic way by varying the Kr to Si flux, yielding Kr concentrations up to 5 at %. Compositions were determined with X-ray microanalysis. A model has been applied to describe the composition of the growing film. The layers

  15. Lithium insertion in sputtered vanadium oxide film

    DEFF Research Database (Denmark)

    West, K.; Zachau-Christiansen, B.; Skaarup, S.V.

    1992-01-01

    were oxygen deficient compared to V2O5. Films prepared in pure argon were reduced to V(4) or lower. The vanadium oxide films were tested in solid-state lithium cells. Films sputtered in oxygen showed electrochemical properties similar to crystalline V2O5. The main differences are a decreased capacity...

  16. Brightness masking is modulated by disparity structure.

    Science.gov (United States)

    Pelekanos, Vassilis; Ban, Hiroshi; Welchman, Andrew E

    2015-05-01

    The luminance contrast at the borders of a surface strongly influences surface's apparent brightness, as demonstrated by a number of classic visual illusions. Such phenomena are compatible with a propagation mechanism believed to spread contrast information from borders to the interior. This process is disrupted by masking, where the perceived brightness of a target is reduced by the brief presentation of a mask (Paradiso & Nakayama, 1991), but the exact visual stage that this happens remains unclear. In the present study, we examined whether brightness masking occurs at a monocular-, or a binocular-level of the visual hierarchy. We used backward masking, whereby a briefly presented target stimulus is disrupted by a mask coming soon afterwards, to show that brightness masking is affected by binocular stages of the visual processing. We manipulated the 3-D configurations (slant direction) of the target and mask and measured the differential disruption that masking causes on brightness estimation. We found that the masking effect was weaker when stimuli had a different slant. We suggest that brightness masking is partly mediated by mid-level neuronal mechanisms, at a stage where binocular disparity edge structure has been extracted. Copyright © 2015 The Authors. Published by Elsevier Ltd.. All rights reserved.

  17. Physics of plasma-wall interactions in controlled fusion

    International Nuclear Information System (INIS)

    Post, D.E.; Behrisch, R.

    1984-01-01

    In the areas of plasma physics, atomic physics, surface physics, bulk material properties and fusion experiments and theory, the following topics are presented: the plasma sheath; plasma flow in the sheath and presheath of a scrape-off layer; probes for plasma edge diagnostics in magnetic confinement fusion devices; atomic and molecular collisions in the plasma boundary; physical sputtering of solids at ion bombardment; chemical sputtering and radiation enhanced sublimation of carbon; ion backscattering from solid surfaces; implantation, retention and release of hydrogen isotopes; surface erosion by electrical arcs; electron emission from solid surfaces;l properties of materials; plasma transport near material boundaries; plasma models for impurity control experiments; neutral particle transport; particle confinement and control in existing tokamaks; limiters and divertor plates; advanced limiters; divertor tokamak experiments; plasma wall interactions in heated plasmas; plasma-wall interactions in tandem mirror machines; and impurity control systems for reactor experiments

  18. Energy-exchange collisions of dark-bright-bright vector solitons.

    Science.gov (United States)

    Radhakrishnan, R; Manikandan, N; Aravinthan, K

    2015-12-01

    We find a dark component guiding the practically interesting bright-bright vector one-soliton to two different parametric domains giving rise to different physical situations by constructing a more general form of three-component dark-bright-bright mixed vector one-soliton solution of the generalized Manakov model with nine free real parameters. Moreover our main investigation of the collision dynamics of such mixed vector solitons by constructing the multisoliton solution of the generalized Manakov model with the help of Hirota technique reveals that the dark-bright-bright vector two-soliton supports energy-exchange collision dynamics. In particular the dark component preserves its initial form and the energy-exchange collision property of the bright-bright vector two-soliton solution of the Manakov model during collision. In addition the interactions between bound state dark-bright-bright vector solitons reveal oscillations in their amplitudes. A similar kind of breathing effect was also experimentally observed in the Bose-Einstein condensates. Some possible ways are theoretically suggested not only to control this breathing effect but also to manage the beating, bouncing, jumping, and attraction effects in the collision dynamics of dark-bright-bright vector solitons. The role of multiple free parameters in our solution is examined to define polarization vector, envelope speed, envelope width, envelope amplitude, grayness, and complex modulation of our solution. It is interesting to note that the polarization vector of our mixed vector one-soliton evolves in sphere or hyperboloid depending upon the initial parametric choices.

  19. Charge ordering in reactive sputtered (1 0 0) and (1 1 1) oriented epitaxial Fe3O4 films

    KAUST Repository

    Mi, Wenbo

    2013-06-01

    Epitaxial Fe3O4 films with (1 0 0) and (1 1 1) orientations fabricated by reactive sputtering present simultaneous magnetic and electrical transitions at 120 and 124 K, respectively. The symmetry decreases from face-centered cubic to monoclinic structure across the Verwey transition. Extra spots with different brightness at different positions appear in selected-area diffraction patterns at 95 K. The extra spots come from the charge ordering of outer-layer electrons of Fe atoms, and should be related to the charge ordering of octahedral B-site Fe atoms. © 2013 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

  20. Charge ordering in reactive sputtered (1 0 0) and (1 1 1) oriented epitaxial Fe3O4 films

    KAUST Repository

    Mi, Wenbo; Guo, Zaibing; Wang, Qingxiao; Yang, Yang; Bai, Haili

    2013-01-01

    Epitaxial Fe3O4 films with (1 0 0) and (1 1 1) orientations fabricated by reactive sputtering present simultaneous magnetic and electrical transitions at 120 and 124 K, respectively. The symmetry decreases from face-centered cubic to monoclinic structure across the Verwey transition. Extra spots with different brightness at different positions appear in selected-area diffraction patterns at 95 K. The extra spots come from the charge ordering of outer-layer electrons of Fe atoms, and should be related to the charge ordering of octahedral B-site Fe atoms. © 2013 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

  1. ECR Plasma Photos

    International Nuclear Information System (INIS)

    Racz, R.; Biri, S.; Palinkas, J.

    2009-01-01

    Complete text of publication follows. In order to observe and study systematically the plasma of electron cyclotron resonance (ECR) ion sources (ECRIS) we made a high number of high-resolution visible light plasma photos and movies in the ATOMKI ECRIS Laboratory. This required building the ECR ion source into an open plasma device, temporarily. An 8MP digital camera was used to record photos of plasmas made from He, methane, N, O, Ne, Ar, Kr, Xe gases and from their mixtures. The effects of the main external setting parameters (gas pressure, gas composition, magnetic field, microwave power, microwave frequency) were studied to the shape, color and structure of the plasma. The double frequency mode (9+14 GHz) was also realized and photos of this special 'star-in-star' shape plasma were recorded. A study was performed to analyze and understand the color of the ECR plasmas. The analysis of the photo series gave us many qualitative and numerous valuable physical information on the nature of ECR plasmas. To our best knowledge our work is the first systematic study of ECR plasmas in the visible light region. When looking in the plasma chamber of an ECRIS we can see an axial image of the plasma (figure 1) in conformity with experimental setup. Most of the quantitative information was obtained through the summarised values of the Analogue Digital Unit (ADU) of pixels. By decreasing the strength of the magnetic trap we clearly observed that the brightness of the central part of the plasma gradually decreases, i.e. the plasma becomes more and more 'empty'. Figure 2 shows a photo series of ECR plasma at decreasing axial magnetic field. The radial size of the plasma increased because of the ascendant resonant zone. By increasing the power of the injected microwave an optimum (or at least saturation) was found in the brightness of the plasma. We found correlation between the gas dosing rates and plasma intensities. When sweeping the frequency of the microwave in a wide region

  2. Unperturbed moderator brightness in pulsed neutron sources

    International Nuclear Information System (INIS)

    Batkov, K.; Takibayev, A.; Zanini, L.; Mezei, F.

    2013-01-01

    The unperturbed neutron brightness of a moderator can be defined from the number of neutrons leaving the surface of a moderator completely surrounded by a reflector. Without openings for beam extraction, it is the maximum brightness that can be theoretically achieved in a moderator. The unperturbed brightness of a cylindrical cold moderator filled with pure para-H 2 was calculated using MCNPX; the moderator dimensions were optimised, for a fixed target and reflector geometry corresponding to the present concept for the ESS spallation source. This quantity does not depend on openings for beam extraction and therefore can be used for a first-round optimisation of a moderator, before effects due to beam openings are considered. We find that such an optimisation yields to a factor of 2 increase with respect to a conventional volume moderator, large enough to accommodate a viewed surface of 12×12 cm 2 : the unperturbed neutron brightness is maximum for a disc-shaped moderator of 15 cm diameter, 1.4 cm height. The reasons for this increase can be related to the properties of the scattering cross-section of para-H 2 , to the added reflector around the exit surface in the case of a compact moderator, and to a directionality effect. This large optimisation gain in the unperturbed brightness hints towards similar potentials for the perturbed neutron brightness, in particular in conjunction with advancing the optical quality of neutron delivery from the moderator to the sample, where by Liouville theorem the brightness is conserved over the beam trajectory, except for absorption and similar type losses

  3. Plasma-wall interactions

    International Nuclear Information System (INIS)

    Behrisch, Rainer

    1978-01-01

    The plasma wall interactions for two extreme cases, the 'vacuum model' and the 'cold gas blanket' are outlined. As a first step for understanding the plasma wall interactions the elementary interaction processes at the first wall are identified. These are energetic ion and neutral particle trapping and release, ion and neutral backscattering, ion sputtering, desorption by ions, photons and electrons and evaporation. These processes have only recently been started to be investigated in the parameter range of interest for fusion research. The few measured data and their extrapolation into regions not yet investigated are reviewed

  4. Substantial difference in target surface chemistry between reactive dc and high power impulse magnetron sputtering

    Science.gov (United States)

    Greczynski, G.; Mráz, S.; Schneider, J. M.; Hultman, L.

    2018-02-01

    The nitride layer formed in the target race track during the deposition of stoichiometric TiN thin films is a factor 2.5 thicker for high power impulse magnetron sputtering (HIPIMS), compared to conventional dc processing (DCMS). The phenomenon is explained using x-ray photoelectron spectroscopy analysis of the as-operated Ti target surface chemistry supported by sputter depth profiles, dynamic Monte Carlo simulations employing the TRIDYN code, and plasma chemical investigations by ion mass spectrometry. The target chemistry and the thickness of the nitride layer are found to be determined by the implantation of nitrogen ions, predominantly N+ and N2+ for HIPIMS and DCMS, respectively. Knowledge of this method-inherent difference enables robust processing of high quality functional coatings.

  5. Thin films preparation of the Ti-Al-O system by rf-sputtering

    International Nuclear Information System (INIS)

    Montes de Oca, J. A.; Ceballos A, J.; Galaviz P, J.; Manaud, J. P.; Lahaye, M.; Munoz S, J.

    2010-01-01

    In the present work Ti-Al-O thin films were synthesized by rf-sputtering technique on glass and silicon (Si) substrates using Ti Al and Ti 3 Al targets in a sputtering chamber with an Ar-O 2 atmosphere. Ti-Al-O thin films were obtained varying experimental parameters such as oxygen percent fed to the reaction chamber, plasma power density and substrate temperature. The films deposited on glass substrates were used to evaluate their optical properties, while those deposited on Si substrates were used to evaluate mechanical and morphological properties. The crystalline structure, morphology, chemical composition and optical properties of the films were evaluated by X-ray diffraction, high-resolution scanning electron microscopy, Auger electron microscopy and visible UV spectroscopy. Films thicknesses were measured using a profiler. The roughness and mechanical properties such as hardness and Young modulus were analyzed by atomic force microscopy and nano indentation technique, respectively. (Author)

  6. Examinations for the determination of the flux density of sputtered iron using laser induced fluorescence

    International Nuclear Information System (INIS)

    Schweer, H.B.

    1983-11-01

    In this work investigations are described to measure the flux density of sputtered iron atoms by means of laser induced fluorescence. In a laboratory experiment an iron target (stainless steel 316, Inconel 600), was bombarded with 10 keV Ar + and 2.5 keV H + and the population distribution of the energy levels of the ground state a 5 D and the metastable state a 5 F was measured. In the plasma wall region in the ISX-B tokamak at the Oak Ridge National Laboratory (USA) neutral iron atoms were measured the first time by laser induced fluorescence. A detection limit of 10 6 atoms/cm 3 was found and sputtered iron atoms were observed in the first 15 ms of the discharge. (orig./BRB)

  7. Intermittent episodes of bright light suppress myopia in the chicken more than continuous bright light.

    Science.gov (United States)

    Lan, Weizhong; Feldkaemper, Marita; Schaeffel, Frank

    2014-01-01

    Bright light has been shown a powerful inhibitor of myopia development in animal models. We studied which temporal patterns of bright light are the most potent in suppressing deprivation myopia in chickens. Eight-day-old chickens wore diffusers over one eye to induce deprivation myopia. A reference group (n = 8) was kept under office-like illuminance (500 lux) at a 10:14 light:dark cycle. Episodes of bright light (15 000 lux) were super-imposed on this background as follows. Paradigm I: exposure to constant bright light for either 1 hour (n = 5), 2 hours (n = 5), 5 hours (n = 4) or 10 hours (n = 4). Paradigm II: exposure to repeated cycles of bright light with 50% duty cycle and either 60 minutes (n = 7), 30 minutes (n = 8), 15 minutes (n = 6), 7 minutes (n = 7) or 1 minute (n = 7) periods, provided for 10 hours. Refraction and axial length were measured prior to and immediately after the 5-day experiment. Relative changes were analyzed by paired t-tests, and differences among groups were tested by one-way ANOVA. Compared with the reference group, exposure to continuous bright light for 1 or 2 hours every day had no significant protective effect against deprivation myopia. Inhibition of myopia became significant after 5 hours of bright light exposure but extending the duration to 10 hours did not offer an additional benefit. In comparison, repeated cycles of 1:1 or 7:7 minutes of bright light enhanced the protective effect against myopia and could fully suppress its development. The protective effect of bright light depends on the exposure duration and, to the intermittent form, the frequency cycle. Compared to the saturation effect of continuous bright light, low frequency cycles of bright light (1:1 min) provided the strongest inhibition effect. However, our quantitative results probably might not be directly translated into humans, but rather need further amendments in clinical studies.

  8. Sputtering and reflection of self-bombardment of tungsten material

    Energy Technology Data Exchange (ETDEWEB)

    Niu, Guo-jian [University of Science and Technology of China, Hefei (China); Institute of Plasma Physics Chinese Academy of Sciences, Hefei (China); Li, Xiao-chun; Xu, Qian; Yang, Zhong-shi [Institute of Plasma Physics Chinese Academy of Sciences, Hefei (China); Luo, Guang-nan, E-mail: gnluo@ipp.ac.cn [University of Science and Technology of China, Hefei (China); Institute of Plasma Physics Chinese Academy of Sciences, Hefei (China); Hefei Center for Physical Science and Technology, Hefei (China); Hefei Science Center of CAS, Hefei (China)

    2015-04-15

    In present research, the sputtering and reflection yield of self-bombardment of tungsten are investigated with the aid of molecular dynamics simulations. The source of sputtered and reflected atoms is detected by traced the original locations of sputtered and reflected atoms. Results show that for the reflected atoms no specific region exists which means cluster atoms are randomly reflected. But almost all of sputtered atoms are from a conical region under the landing point of cluster. So we can determine the sputtering yield by study the dimension of the sputtering region. Molecular dynamics shows the depth and radius of the conical are power functions of impacting energy. The effects of cluster size and temperature of target on sputtering and reflection rate are also preformed in present study. Both sputtering and reflection yield are proportion to cluster size in present cluster size, i.e. 66–2647 atoms. Higher target temperature can increase sputtering yield and deduce sputtering threshold energy, but little effect on reflection rate.

  9. Sputtering and reflection of self-bombardment of tungsten material

    International Nuclear Information System (INIS)

    Niu, Guo-jian; Li, Xiao-chun; Xu, Qian; Yang, Zhong-shi; Luo, Guang-nan

    2015-01-01

    In present research, the sputtering and reflection yield of self-bombardment of tungsten are investigated with the aid of molecular dynamics simulations. The source of sputtered and reflected atoms is detected by traced the original locations of sputtered and reflected atoms. Results show that for the reflected atoms no specific region exists which means cluster atoms are randomly reflected. But almost all of sputtered atoms are from a conical region under the landing point of cluster. So we can determine the sputtering yield by study the dimension of the sputtering region. Molecular dynamics shows the depth and radius of the conical are power functions of impacting energy. The effects of cluster size and temperature of target on sputtering and reflection rate are also preformed in present study. Both sputtering and reflection yield are proportion to cluster size in present cluster size, i.e. 66–2647 atoms. Higher target temperature can increase sputtering yield and deduce sputtering threshold energy, but little effect on reflection rate

  10. Proxy magnetometry of the photosphere: why are G-band bright points so bright?

    NARCIS (Netherlands)

    Rutten, R.J.; Kiselman, Dan; Voort, Luc Rouppe van der; Plez, Bertrand

    2000-01-01

    We discuss the formation of G-band bright points in terms of standard uxtube modeling, in particular the 1D LTE models constructed by Solanki and coworkers. Combined with LTE spectral synthesis they explain observed G-band bright point contrasts quite well. The G-band contrast increase over the

  11. A selective deficit in the appreciation and recognition of brightness: brightness agnosia?

    NARCIS (Netherlands)

    Nijboer, T.C.W.; Nys, G.M.S.; van der Smagt, M.J.; de Haan, E.H.F.

    2009-01-01

    We report a patient with extensive brain damage in the right hemisphere who demonstrated a severe impairment in the appreciation of brightness. Acuity, contrast sensitivity as well as luminance discrimination were normal, suggesting her brightness impairment is not a mere consequence of low-level

  12. A selective deficit in the appreciation and recognition of brightness: brightness agnosia?

    Science.gov (United States)

    Nijboer, Tanja C W; Nys, Gudrun M S; van der Smagt, Maarten J; de Haan, Edward H F

    2009-01-01

    We report a patient with extensive brain damage in the right hemisphere who demonstrated a severe impairment in the appreciation of brightness. Acuity, contrast sensitivity as well as luminance discrimination were normal, suggesting her brightness impairment is not a mere consequence of low-level sensory impairments. The patient was not able to indicate the darker or the lighter of two grey squares, even though she was able to see that they differed. In addition, she could not indicate whether the lights in a room were switched on or off, nor was she able to differentiate between normal greyscale images and inverted greyscale images. As the patient recognised objects, colours, and shapes correctly, the impairment is specific for brightness. As low-level, sensory processing is normal, this specific deficit in the recognition and appreciation of brightness appears to be of a higher, cognitive level, the level of semantic knowledge. This appears to be the first report of 'brightness agnosia'.

  13. Plasmonic EIT-like switching in bright-dark-bright plasmon resonators.

    Science.gov (United States)

    Chen, Junxue; Wang, Pei; Chen, Chuncong; Lu, Yonghua; Ming, Hai; Zhan, Qiwen

    2011-03-28

    In this paper we report the study of the electromagnetically induced transparency (EIT)-like transmission in the bright-dark-bright plasmon resonators. It is demonstrated that the interferences between the dark plasmons excited by two bright plasmon resonators can be controlled by the incident light polarization. The constructive interference strengthens the coupling between the bright and dark resonators, leading to a more prominent EIT-like transparency window of the metamaterial. In contrary, destructive interference suppresses the coupling between the bright and dark resonators, destroying the interference pathway that forms the EIT-like transmission. Based on this observation, the plasmonic EIT switching can be realized by changing the polarization of incident light. This phenomenon may find applications in optical switching and plasmon-based information processing.

  14. Transport theory of sputtering I: Depth of origin of sputtered atoms

    International Nuclear Information System (INIS)

    Zhang, Z.L.

    1999-01-01

    Sputter theory employing a sum of two power cross sections has been implemented. Compared with the well known Lindhard power cross section (V∝r -1/m ), a sum of two such cross sections can give a much better approximation to the Born-Mayer scattering in the low energy region (m ∼ 0.1). By using both one and two power cross sections, we have solved the linear transport equations describing the sputtering problem asymptotically. As usual, electronic stopping is ignored in the analysis. It has further been proved that Falcone's theory of the atom ejection process contradicts transport theory. The Andersen-Sigmund relation for partial sputtering yield ratios between two elements in an arbitrary multicomponent target has been derived by both methods. The energy deposited in the target surface layers has been computed for a few typical ion-target combinations. The numerical curves show that both theories generate almost the same results (error <10%) for m=3D0.2. It is also shown that, if the sputtering yield equals the corresponding one in Sigmund's theory, the depth of origin of sputtered atoms must be shorter than in Sigmund's theory for 0.25 m ≥ 3D 0. The former even may be only about one half of the latter as long as m=3D0. (Copyright (c) 1998 Elsevier Science B.V., Amsterdam. All rights reserved.)

  15. Pumping behavior of sputter ion pumps

    International Nuclear Information System (INIS)

    Chou, T.S.; McCafferty, D.

    The ultrahigh vacuum requirements of ISABELLE is obtained by distributed pumping stations. Each pumping station consists of 1000 l/s titanium sublimation pump for active gases (N 2 , H 2 , O 2 , CO, etc.), and a 20 l/s sputter ion pump for inert gases (methane, noble gases like He, etc.). The combination of the alarming production rate of methane from titanium sublimation pumps (TSP) and the decreasing pumping speed of sputter ion pumps (SIP) in the ultrahigh vacuum region (UHV) leads us to investigate this problem. In this paper, we first describe the essential physics and chemistry of the SIP in a very clean condition, followed by a discussion of our measuring techniques. Finally measured methane, argon and helium pumping speeds are presented for three different ion pumps in the range of 10 -6 to 10 -11 Torr. The virtues of the best pump are also discussed

  16. STARS4ALL Night Sky Brightness Photometer

    Directory of Open Access Journals (Sweden)

    Jaime Zamorano

    2017-06-01

    Full Text Available We present the main features of TESS-W, the first version of a series of inexpensive but reliable photometers that will be used to measure night sky brightness. The bandpass is extended to the red with respect of that of the Sky Quality Meter (SQM. TESS-W connects to a router via WIFI and it sends automatically the brightness values to a data repository using Internet of Things protocols. The device includes an infrared sensor to estimate the cloud coverage. It is designed for fixed stations to monitor the evolution of the sky brightness. The photometer could also be used in local mode connected to a computer or tablet to gather data from a moving vehicle. The photometer is being developed within STARS4ALL project, a collective awareness platform for promoting dark skies in Europe, funded by the EU. We intend to extend the existing professional networks to a citizen-based network of photometers. 

  17. Merging and Splitting of Plasma Spheroids in a Dusty Plasma

    Science.gov (United States)

    Mikikian, Maxime; Tawidian, Hagop; Lecas, Thomas

    2012-12-01

    Dust particle growth in a plasma is a strongly disturbing phenomenon for the plasma equilibrium. It can induce many different types of low-frequency instabilities that can be experimentally observed, especially using high-speed imaging. A spectacular case has been observed in a krypton plasma where a huge density of dust particles is grown by material sputtering. The instability consists of well-defined regions of enhanced optical emission that emerge from the electrode vicinity and propagate towards the discharge center. These plasma spheroids have complex motions resulting from their mutual interaction that can also lead to the merging of two plasma spheroids into a single one. The reverse situation is also observed with the splitting of a plasma spheroid into two parts. These results are presented for the first time and reveal new behaviors in dusty plasmas.

  18. Niobium sputter deposition on quarter wave resonators

    CERN Document Server

    Viswanadham, C; Jayaprakash, D; Mishra, R L

    2003-01-01

    Niobium sputter deposition on quarter wave copper R.F resonators, have been taken up in our laboratory, An ultra high vacuum system was made for this purpose. Niobium exhibits superconducting properties at liquid Helium temperature. A uniform coating of about 1.5 mu m of niobium on the internal surfaces of the copper resonant cavities is desired. Power dissipation in the resonators can be greatly reduced by making the internal surfaces of the R.F cavity super conducting. (author)

  19. Sputter coating of microspherical substrates by levitation

    Science.gov (United States)

    Lowe, A.T.; Hosford, C.D.

    Microspheres are substantially uniformly coated with metals or nonmetals by simltaneously levitating them and sputter coating them at total chamber pressures less than 1 torr. A collimated hole structure comprising a parallel array of upwardly projecting individual gas outlets is machined out to form a dimple. Glass microballoons,, which are particularly useful in laser fusion applications, can be substantially uniformly coated using the coating method and apparatus.

  20. Increasing the brightness of light sources

    Energy Technology Data Exchange (ETDEWEB)

    Fu, Ling

    2006-11-16

    In this work the principle of light recycling is applied to artificial light sources in order to achieve brightness enhancement. Firstly, the feasibilities of increasing the brightness of light sources via light recycling are examined theoretically, based on the fundamental laws of thermodynamics including Kirchhoff's law on radiation, Planck's law, Lambert-Beer's law, the etendue conservation and the brightness theorem. From an experimental viewpoint, the radiation properties of three different kinds of light sources including short-arc lamps, incandescent lamps and LEDs characterized by their light-generating mechanisms are investigated. These three types of sources are used in light recycling experiments, for the purpose of 1. validating the intrinsic light recycling effect in light sources, e. g. the intrinsic light recycling effect in incandescent lamps stemming from the coiled filament structure. 2. acquiring the required parameters for establishing physical models, e.g. the emissivity/absorptivity of the short-arc lamps, the intrinsic reflectivity and the external quantum efficiency of LEDs. 3. laying the foundations for designing optics aimed at brightness enhancement according to the characteristics of the sources and applications. Based on the fundamental laws and experiments, two physical models for simulating the radiance distribution of light sources are established, one for thermal filament lamps, the other for luminescent sources, LEDs. As validation of the theoretical and experimental investigation of the light recycling effect, an optical device, the Carambola, is designed for achieving deterministic and multiple light recycling. The Carambola has the function of a concentrator. In order to achieve the maximum possible brightness enhancement with the Carambola, several combinations of sources and Carambolas are modelled in ray-tracing simulations. Sources with different light-emitting mechanisms and different radiation properties

  1. Flexible Al-doped ZnO films grown on PET substrates using linear facing target sputtering for flexible OLEDs

    International Nuclear Information System (INIS)

    Jeong, Jin-A; Shin, Hyun-Su; Choi, Kwang-Hyuk; Kim, Han-Ki

    2010-01-01

    We report the characteristics of flexible Al-doped zinc oxide (AZO) films prepared by a plasma damage-free linear facing target sputtering (LFTS) system on PET substrates for use as a flexible transparent conducting electrode in flexible organic light-emitting diodes (OLEDs). The electrical, optical and structural properties of LFTS-grown flexible AZO electrodes were investigated as a function of dc power. We obtained a flexible AZO film with a sheet resistance of 39 Ω/□ and an average transmittance of 84.86% in the visible range although it was sputtered at room temperature without activation of the Al dopant. Due to the effective confinement of the high-density plasma between the facing AZO targets, the AZO film was deposited on the PET substrate without plasma damage and substrate heating caused by bombardment of energy particles. Moreover, the flexible OLED fabricated on the AZO/PET substrate showed performance similar to the OLED fabricated on a ITO/PET substrate in spite of a lower work function. This indicates that LFTS is a promising plasma damage-free and low-temperature sputtering technique for deposition of flexible and indium-free AZO electrodes for use in cost-efficient flexible OLEDs.

  2. Epitaxial growth of rhenium with sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Oh, Seongshik [National Institute of Standards and Technology, Boulder, CO 80305 (United States) and Department of Physics, University of Illinois, Urbana, IL 61801 (United States)]. E-mail: soh@boulder.nist.gov; Hite, Dustin A. [National Institute of Standards and Technology, Boulder, CO 80305 (United States); Cicak, K. [National Institute of Standards and Technology, Boulder, CO 80305 (United States); Osborn, Kevin D. [National Institute of Standards and Technology, Boulder, CO 80305 (United States); Simmonds, Raymond W. [National Institute of Standards and Technology, Boulder, CO 80305 (United States); McDermott, Robert [University of California, Santa Barbara, CA 93106 (United States); Cooper, Ken B. [University of California, Santa Barbara, CA 93106 (United States); Steffen, Matthias [University of California, Santa Barbara, CA 93106 (United States); Martinis, John M. [University of California, Santa Barbara, CA 93106 (United States); Pappas, David P. [National Institute of Standards and Technology, Boulder, CO 80305 (United States)

    2006-02-21

    We have grown epitaxial Rhenium (Re) (0001) films on {alpha}-Al{sub 2}O{sub 3} (0001) substrates using sputter deposition in an ultra high vacuum system. We find that better epitaxy is achieved with DC rather than with RF sputtering. With DC sputtering, epitaxy is obtained with the substrate temperatures above 700 deg. C and deposition rates below 0.1 nm/s. The epitaxial Re films are typically composed of terraced hexagonal islands with screw dislocations, and island size gets larger with high temperature post-deposition annealing. The growth starts in a three dimensional mode but transforms into two dimensional mode as the film gets thicker. With a thin ({approx}2 nm) seed layer deposited at room temperature and annealed at a high temperature, the initial three dimensional growth can be suppressed. This results in larger islands when a thick film is grown at 850 deg. C on the seed layer. We also find that when a room temperature deposited Re film is annealed to higher temperatures, epitaxial features start to show up above {approx}600 deg. C, but the film tends to be disordered.

  3. Richard Bright and his neurological studies.

    Science.gov (United States)

    Pearce, J M S

    2009-01-01

    Richard Bright was one of the famous triumvirate of Guy's Hospital physicians in the Victorian era. Remembered for his account of glomerulonephritis (Bright's disease) he also made many important and original contributions to medicine and neurology. These included his work on cortical epileptogenesis, descriptions of simple partial (Jacksonian) seizures, infantile convulsions, and a variety of nervous diseases. Most notable were his reports of neurological studies including papers on traumatic tetanus, syringomyelia, arteries of the brain, contractures of spinal origin, tumours of the base of the brain, and narcolepsy. His career and these contributions are outlined. Copyright 2009 S. Karger AG, Basel.

  4. Human CD56bright NK Cells

    DEFF Research Database (Denmark)

    Michel, Tatiana; Poli, Aurélie; Cuapio, Angelica

    2016-01-01

    Human NK cells can be subdivided into various subsets based on the relative expression of CD16 and CD56. In particular, CD56(bright)CD16(-/dim) NK cells are the focus of interest. They are considered efficient cytokine producers endowed with immunoregulatory properties, but they can also become c...... NK cell subsets is not fully defined, nor is their precise hematopoietic origin. In this article, we summarize recent studies about CD56(bright) NK cells in health and disease and briefly discuss the current controversies surrounding them....

  5. Diagnostics for high-brightness beams

    International Nuclear Information System (INIS)

    Shafer, R.E.

    1990-01-01

    Special techniques are required for beam diagnostics on high-brightness particle beams. Examples of high-brightness beams include low-emittance proton linacs (either pulsed or CW), electron linacs suitable for free-electron-laser applications, and future linear colliders. Non-interceptive and minimally-interceptive techniques for measuring beam current, position, profile, and transverse and longitudinal emittance will be reviewed. Included will be stripline, wire scanner, laser neutralization, beam-beam scattering, interceptive microgratings, spontaneous emission, optical transition radiation, and other techniques. 24 refs

  6. Sputtering of copper atoms by keV atomic and molecular ions A comparison of experiment with analytical and computer based models

    CERN Document Server

    Gillen, D R; Goelich,

    2002-01-01

    Non-resonant multiphoton ionisation combined with quadrupole and time-of-flight analysis has been used to measure energy distributions of sputtered copper atoms. The sputtering of a polycrystalline copper target by 3.6 keV Ar sup + , N sup + and CF sub 2 sup + and 1.8 keV N sup + and CF sub 2 sup + ion bombardment at 45 deg. has been investigated. The linear collision model in the isotropic limit fails to describe the high energy tail of the energy distributions. However the TRIM.SP computer simulation has been shown to provide a good description. The results indicate that an accurate description of sputtering by low energy, molecular ions requires the use of computer simulation rather than analytical approaches. This is particularly important when considering plasma-surface interactions in plasma etching and deposition systems.

  7. Ambient-temperature fabrication of microporous carbon terminated with graphene walls by sputtering process for hydrogen storage applications

    International Nuclear Information System (INIS)

    Banerjee, Arghya Narayan; Joo, Sang Woo; Min, Bong-Ki

    2013-01-01

    A very thin amorphous carbon film (10–30 nm), has been bombarded with sputtered Cr nanoparticles, resulting in inelastic collision between the nanoparticles and the nuclei of the C-atoms causing atom displacement and re-arrangement into graphene layers. The process occurs at ambient temperature. Fabrication of graphitic microporous carbon terminated with few-to-multilayer graphene walls has been verified by Raman spectroscopy and scanning transmission electron microscopy. High resolution transmission electron micrographs reveal that the formation of graphene layers is highly sensitive to the sputtering parameters. With a gradual increase in the sputtering voltage/current density/time from 3.5 kV/40 mA–cm −2 /1.0 min to 5.0 kV/70 mA–cm −2 /3.0 min the graphitic domains are found to transform from semi-graphitized layers to well-defined, highly ordered, larger-area graphene walls within the microporous network. The mechanism of this graphitic microporous carbon formation is assumed to be due to two simultaneous processes: in one hand, the sputtering plasma, containing energetic ions and sub-atomic particles, act as dry-etchant to activate the a:C film to transform it into microporous carbon, whereas on the other hand, the charged metal nanoparticle/ion bombardment under sputtering resulted in the inelastic collision between the nanoparticles/ions and the nuclei of the C atoms followed by atom displacement (and displacement cascade) and re-arrangement into ordered structure to form graphitic domains within the microporous carbon network. H 2 storage experiment of the samples depicts excellent hydrogen storage properties. This simple, cost-effective, complementary-metal-oxide-semiconductor-compatible, single-step process of metal-graphene hybrid nanomaterial formation may find interesting applications in the field of optoelectronics and biotechnology. Additionally, this method can be adopted easily for the incorporation of transition metals into graphene and

  8. RADIOASTRON OBSERVATIONS OF THE QUASAR 3C273: A CHALLENGE TO THE BRIGHTNESS TEMPERATURE LIMIT

    Energy Technology Data Exchange (ETDEWEB)

    Kovalev, Y. Y.; Kardashev, N. S.; Voitsik, P. A.; Kovalev, Yu. A.; Lisakov, M. M.; Sokolovsky, K. V. [Astro Space Center of Lebedev Physical Institute, Profsoyuznaya 84/32, 117997 Moscow (Russian Federation); Kellermann, K. I. [National Radio Astronomy Observatory, 520 Edgemont Road, Charlottesville, VA 22903-2475 (United States); Lobanov, A. P.; Zensus, J. A.; Anderson, J. M.; Bach, U.; Kraus, A. [Max-Planck-Institute for Radio Astronomy, Auf dem Hügel 69, D-53121 (Germany); Johnson, M. D. [Harvard-Smithsonian Center for Astrophysics, 60 Garden Street, Cambridge, MA 02138 (United States); Gurvits, L. I. [Joint Institute for VLBI ERIC, P.O. Box 2, 7990 AA Dwingeloo (Netherlands); Jauncey, D. L. [CSIRO Astronomy and Space Sciences, Epping, NSW 1710 (Australia); Ghigo, F. [National Radio Astronomy Observatory, Rt. 28/92, Green Bank, WV 24944-0002 (United States); Ghosh, T.; Salter, C. J. [Arecibo Observatory, NAIC, HC3 Box 53995, Arecibo, Puerto Rico, PR 00612 (United States); Petrov, L. Yu. [Astrogeo Center, 7312 Sportsman Drive, Falls Church, VA 22043 (United States); Romney, J. D. [National Radio Astronomy Observatory, P.O. Box O, 1003 Lopezville Road, Socorro, NM 87801-0387 (United States)

    2016-03-20

    Inverse Compton cooling limits the brightness temperature of the radiating plasma to a maximum of 10{sup 11.5} K. Relativistic boosting can increase its observed value, but apparent brightness temperatures much in excess of 10{sup 13} K are inaccessible using ground-based very long baseline interferometry (VLBI) at any wavelength. We present observations of the quasar 3C 273, made with the space VLBI mission RadioAstron on baselines up to 171,000 km, which directly reveal the presence of angular structure as small as 26 μas (2.7 light months) and brightness temperature in excess of 10{sup 13} K. These measurements challenge our understanding of the non-thermal continuum emission in the vicinity of supermassive black holes and require a much higher Doppler factor than what is determined from jet apparent kinematics.

  9. Influence of surface topography on the sputtering yields of silver

    International Nuclear Information System (INIS)

    Pan Jisheng; Wang Zhenxia; Tao Zhenlan; Zhang Jiping

    1992-01-01

    The sputtering yields of silver have been measured as a function of the fluence of incident Ar + ions (27 keV) using the collector technique and RBS analysis. The irradiated surface was examined by scanning electron microscopy (SEM). It is shown that the sputtering yields of surfaces with topography are enhanced relative to smooth surfaces of silver, but the extent of the enhancement depends on the irradiation dose. The experimental results can be explained assuming that the surface topography and sputtering yield are a function of incident angle. It is obvious that the surface topography is an important factor to influence the sputtering yield. The term ''apparent sputtering yield'' has specifically been used when referring to the experimental sputtering yield of a surface with topography, to emphasize the difference with a smooth surface. (orig.)

  10. Dwell time dependent morphological transition and sputtering yield of ion sputtered Sn

    International Nuclear Information System (INIS)

    Qian, H X; Zeng, X R; Zhou, W

    2010-01-01

    Self-organized nano-scale patterns may appear on a wide variety of materials irradiated with an ion beam. Good manipulation of these structures is important for application in nanostructure fabrication. In this paper, dwell time has been demonstrated to be able to control the ripple formation and sputtering yield on Sn surface. Ripples with a wavelength of 1.7 μm were observed for a dwell time in the range 3-20 μs, whereas much finer ripples with a wavelength of 540 nm and a different orientation were observed for a shorter dwell time in the range 0.1-2 μs. The sputtering yield increases with dwell time significantly. The results provide a new basis for further steps in the theoretical description of morphology evolution during ion beam sputtering.

  11. Matted-fiber divertor tagets for sputter resistance

    International Nuclear Information System (INIS)

    Gierszewski, P.J.; Todreas, N.E.; Mikic, B.; Yang, T.F.

    1981-06-01

    Reductions in net sputtering yields can be obtained by altering the surface topography to maximize redeposition of sputtered atoms. A simple analysis is used to indicate a potential reduction by a factor of 2 to 5 for matted fiber divertor targets, relatively independent of incident, reflected and sputtered atom distributions. The fiber temperature is also shown to be acceptable, even up to 10 MW/m 2 , for reasonably combinations of materials, fiber diameter and fiber spacing

  12. Investigation of Plasma Facing Components in Plasma Focus Operation

    Science.gov (United States)

    Roshan, M. V.; Babazadeh, A. R.; Kiai, S. M. Sadat; Habibi, H.; Mamarzadeh, M.

    2007-09-01

    Both aspects of the plasma-wall interactions, counter effect of plasma and materials, have been considered in our experiments. The AEOI plasma focus, Dena, has Filippov-type electrodes. The experimental results verify that neutron production increases using tungsten as an anode insert material, compared to the copper one. The experiments show decrement of the hardness of Aluminum targets outward the sides, from 135 to 78 in Vickers scale. The sputtering yield is about 0.0065 for deuteron energy of 50 keV.

  13. Calculated sputtering and atomic displacement cross-sections for applications to medium voltage analytical electron microscopy

    International Nuclear Information System (INIS)

    Bradley, C.R.; Zaluzec, N.J.

    1987-08-01

    The development of medium voltage electron microscopes having high brightness electron sources and ultra-high vacuum environments has been anticipated by the microscopy community now for several years. The advantages of such a configuration have been discussed to great lengths, while the potential disadvantages have for the most part been neglected. The most detrimental of these relative to microcharacterization are the effects of electron sputtering and atomic displacement to the local specimen composition. These effects have in the past been considered mainly in the high voltage electron microscope regime and generally were ignored in lower voltage instruments. Recent experimental measurements have shown that the effects of electron sputtering as well as radiation induced segregation can be observed in conventional transmission electron microscopes. It is, therefore, important to determine at what point the effects will begin to manifest themselves in the new generation of medium voltage analytical electron microscopes. In this manuscript we present new calculations which allow the individual experimentalist to determine the potential threshold levels for a particular elemental system and thus avoid the dangers of introducing artifacts during microanalysis. 12 refs., 3 figs

  14. Sputtering materials for VLSI and thin film devices

    CERN Document Server

    Sarkar, Jaydeep

    2010-01-01

    An important resource for students, engineers and researchers working in the area of thin film deposition using physical vapor deposition (e.g. sputtering) for semiconductor, liquid crystal displays, high density recording media and photovoltaic device (e.g. thin film solar cell) manufacturing. This book also reviews microelectronics industry topics such as history of inventions and technology trends, recent developments in sputtering technologies, manufacturing steps that require sputtering of thin films, the properties of thin films and the role of sputtering target performance on overall p

  15. Computer simulation of the self-sputtering of uranium

    International Nuclear Information System (INIS)

    Robinson, M.T.

    1983-01-01

    The sputtering of polycrystalline α-uranium by uranium ions of energies below 10 keV has been studied in the binary collision approximation using the computer simulation program marlowe. Satisfactory agreement of the computed sputtering yields with the small amount of available experimental data was achieved using the Moliere interatomic potential, a semilocal inelastic loss function, and a planar surface binding barrier, all with conventional parameters. The model is used to discuss low energy sputtering processes and the energy and angular distributions of the reflected primaries and the sputtered target particles

  16. Sputtering induced surface composition changes in copper-palladium alloys

    International Nuclear Information System (INIS)

    Sundararaman, M.; Sharma, S.K.; Kumar, L.; Krishnan, R.

    1981-01-01

    It has been observed that, in general, surface composition is different from bulk composition in multicomponent materials as a result of ion beam sputtering. This compositional difference arises from factors like preferential sputtering, radiation induced concentration gradients and the knock-in effect. In the present work, changes in the surface composition of copper-palladium alloys, brought about by argon ion sputtering, have been studied using Auger electron spectroscopy. Argon ion energy has been varied from 500 eV to 5 keV. Enrichment of palladium has been observed in the sputter-altered layer. The palladium enrichment at the surface has been found to be higher for 500 eV argon ion sputtering compared with argon ion sputtering at higher energies. Above 500 eV, the surface composition has been observed to remain the same irrespective of the sputter ion energy for each alloy composition. The bulk composition ratio of palladium to copper has been found to be linearly related to the sputter altered surface composition ratio of palladium to copper. These results are discussed on the basis of recent theories of alloy sputtering. (orig.)

  17. The Eindhoven High-Brightness Electron Programme

    NARCIS (Netherlands)

    Brussaard, G.J.H.; Wiel, van der M.J.

    2004-01-01

    The Eindhoven High-Brightness programme is aimed at producing ultra-short intense electron bunches from compact accelerators. The RF electron gun is capable of producing 100 fs electron bunches at 7.5 MeV and 10 pC bunch charge. The DC/RF hybrid gun under development will produce bunches <75 fs at

  18. Discussion of high brightness rf linear accelerators

    International Nuclear Information System (INIS)

    Jameson, R.A.

    1987-01-01

    The fundamental aspects of high-brightness rf linacs are outlined, showing the breadth and complexity of the technology and indicating that synergism with advancements in other areas is important. Areas of technology reviewed include ion sources, injectors, rf accelerator structures, beam dynamics, rf power, and automatic control

  19. Simultaneous brightness contrast of foraging Papilio butterflies

    Science.gov (United States)

    Kinoshita, Michiyo; Takahashi, Yuki; Arikawa, Kentaro

    2012-01-01

    This study focuses on the sense of brightness in the foraging Japanese yellow swallowtail butterfly, Papilio xuthus. We presented two red discs of different intensity on a grey background to butterflies, and trained them to select one of the discs. They were successfully trained to select either a high intensity or a low intensity disc. The trained butterflies were tested on their ability to perceive brightness in two different protocols: (i) two orange discs of different intensity presented on the same intensity grey background and (ii) two orange discs of the same intensity separately presented on a grey background that was either higher or lower in intensity than the training background. The butterflies trained to high intensity red selected the orange disc of high intensity in protocol 1, and the disc on the background of low intensity grey in protocol 2. We obtained similar results in another set of experiments with purple discs instead of orange discs. The choices of the butterflies trained to low intensity red were opposite to those just described. Taken together, we conclude that Papilio has the ability to learn brightness and darkness of targets independent of colour, and that they have the so-called simultaneous brightness contrast. PMID:22179808

  20. Robust fitting of diurnal brightness temperature cycle

    CSIR Research Space (South Africa)

    Udahemuka, G

    2007-11-01

    Full Text Available for a pixel concerned. Robust fitting of observed Diurnal Temperature Cycle (DTC) taken over a day of a given pixel without cloud cover and other abnormally conditions such as fire can give a data based brightness temperature model for a given pixel...

  1. Intermittent Episodes of Bright Light Suppress Myopia in the Chicken More than Continuous Bright Light

    OpenAIRE

    Lan, Weizhong; Feldkaemper, Marita; Schaeffel, Frank

    2014-01-01

    PURPOSE: Bright light has been shown a powerful inhibitor of myopia development in animal models. We studied which temporal patterns of bright light are the most potent in suppressing deprivation myopia in chickens. METHODS: Eight-day-old chickens wore diffusers over one eye to induce deprivation myopia. A reference group (n = 8) was kept under office-like illuminance (500 lux) at a 10:14 light:dark cycle. Episodes of bright light (15 000 lux) were super-imposed on this background as follows....

  2. Evaluation of composition, mechanical properties and structure of nc-TiC/a-C:H coatings prepared by balanced magnetron sputtering

    Czech Academy of Sciences Publication Activity Database

    Souček, P.; Schmidtová, T.; Zábranský, L.; Buršíková, V.; Vašina, P.; Caha, O.; Jílek, M.; Abdelazziz, El Mel.; Tessier, P.Y.; Schäfer, J.; Buršík, Jiří; Peřina, Vratislav; Mikšová, Romana

    2012-01-01

    Roč. 211, OCT 25 (2012), s. 111-116 ISSN 0257-8972 Institutional support: RVO:68081723 ; RVO:61389005 Keywords : nanocomposite * magnetron sputtering * titanium Subject RIV: JI - Composite Materials; BL - Plasma and Gas Discharge Physics (UJF-V) Impact factor: 1.941, year: 2012

  3. INFLUENCE OF LOW-ENERGY AR-SPUTTERING ON THE ELECTRONIC-PROPERTIES OF INAS-BASED QUANTUM-WELL STRUCTURES

    NARCIS (Netherlands)

    Magnee, P.H.C.; den Hartog, S.G.; Wees, B.J.van; Klapwijk, T.M; van de Graaf, W.; Borghs, G.

    1995-01-01

    The influence of low energy (80-500 eV) Ar-ion milling cleaning techniques on InAs based quantum well structures is investigated. It is found that both etching with a Kaufmann source and sputter-etching with a rf-plasma enhances the electron density and reduces the mobility. An anneal at 180 degrees

  4. Anodic self-organized transparent nanotubular/porous hematite films from Fe thin-films sputtered on FTO and photoelectrochemical water splitting

    Czech Academy of Sciences Publication Activity Database

    Wang, L.; Lee, C.-Y.; Kirchgeorg, R.; Liu, N.; Lee, K.; Kment, Š.; Hubička, Zdeněk; Krýsa, J.; Olejníček, J.; Čada, M.; Zbořil, R.; Schmuki, P.

    2015-01-01

    Roč. 41, č. 12 (2015), s. 9333-9341 ISSN 0922-6168. [Pannonian Symposium on Catalysis /12./. Třešť, 16.09.2014-20.09.2014] Institutional support: RVO:68378271 Keywords : hematite * nanotubular * anodization * magnetron * sputtering * water splitting Subject RIV: BL - Plasma and Gas Discharge Physics Impact factor: 1.833, year: 2015

  5. Preparation and comparison of a-C:H coatings using reactive sputter techniques

    Energy Technology Data Exchange (ETDEWEB)

    Keunecke, M., E-mail: martin.keunecke@ist.fraunhofer.d [Fraunhofer Institute for Surface Engineering and Thin Films (IST), Braunschweig (Germany); Weigel, K.; Bewilogua, K. [Fraunhofer Institute for Surface Engineering and Thin Films (IST), Braunschweig (Germany); Cremer, R.; Fuss, H.-G. [CemeCon AG, Wuerselen (Germany)

    2009-12-31

    Amorphous hydrogenated carbon (a-C:H) coatings are widely used in several industrial applications. These coatings commonly will be prepared by plasma activated chemical vapor deposition (PACVD). The main method used to prepare a-C:H coating in industrial scale is based on a glow discharge in a hydrocarbon gas like acetylene or methane using a substrate electrode powered with medium frequency (m.f. - some 10 to 300 kHz). Some aims of further development are adhesion improvement, increase of hardness and high coating quality on complex geometries. A relatively new and promising technique to fulfil these requirements is the deposition of a-C:H coatings by a reactive d.c. magnetron sputter deposition from a graphite target with acetylene as reactive gas. An advancement of this technique is the deposition in a pulsed magnetron sputter process. Using these three mentioned techniques a-C:H coatings were prepared in the same deposition machine. For adhesion improvement different interlayer systems were applied. The effect of different substrate bias voltages (d.c. and d.c. pulse) was investigated. By applying the magnetron sputter technique in the d.c. pulse mode, plastic hardness values up to 40 GPa could be reached. Besides hardness other mechanical properties like resistance against abrasive wear were measured and compared. Cross sectional SEM images showed the growth structure of the coatings.

  6. Electrical insulation properties of RF-sputtered LiPON layers towards electrochemical stability of lithium batteries

    OpenAIRE

    Vieira, E. M. F.; Ribeiro, J. F.; Silva, Maria Manuela; Barradas, N. P.; Alves, E.; Alves, A.; Correia, M. R.; Gonçalves, L. M.

    2016-01-01

    Electrochemical stability, moderate ionic conductivity and low electronic conductivity make the lithium phosphorous oxynitride (LiPON) electrolyte suitable for micro and nanoscale lithium batteries. The electrical and electrochemical properties of thin-film electrolytes can seriously compromise full battery performance. Here, radio-frequency (RF)-sputtered LiPON thin films were fabricated in nitrogen plasma under different working pressure conditions. With a slight decrease in ...

  7. Advances and challenges in the field of plasma polymer nanoparticles

    Directory of Open Access Journals (Sweden)

    Andrei Choukourov

    2017-09-01

    Full Text Available This contribution reviews plasma polymer nanoparticles produced by gas aggregation cluster sources either via plasma polymerization of volatile monomers or via radio frequency (RF magnetron sputtering of conventional polymers. The formation of hydrocarbon, fluorocarbon, silicon- and nitrogen-containing plasma polymer nanoparticles as well as core@shell nanoparticles based on plasma polymers is discussed with a focus on the development of novel nanostructured surfaces.

  8. Search for the sources of the solar wind in the 9.1 cm brightness temperature

    International Nuclear Information System (INIS)

    George, R.G.

    1975-01-01

    The sources of solar wind streams have been the object of intensive research for many years, but the various ideas of where and how streams originate on the sun are still incomplete and contradictory. The present study is an attempt to find the solar wind sources by mathematically approximating the 9.1 cm brightness temperature which would be expected at the foot of spacecraft-measured solar wind streams and by then comparing it with actual radio brightness temperature measurements. Several significant results were found from an analysis of the correlation results. Most plasma emanating from the sun was found to come from high solar latitudes and to deviate significantly from the normally expected east-west path in the low corona. Magnetic channelng causes correlation studies to fail when the sun's magnetic configuration is unstable. The travel time of the plasma from the sun's 9.1 cm emission level to the earth is often more than a month

  9. Intermittent episodes of bright light suppress myopia in the chicken more than continuous bright light.

    Directory of Open Access Journals (Sweden)

    Weizhong Lan

    Full Text Available PURPOSE: Bright light has been shown a powerful inhibitor of myopia development in animal models. We studied which temporal patterns of bright light are the most potent in suppressing deprivation myopia in chickens. METHODS: Eight-day-old chickens wore diffusers over one eye to induce deprivation myopia. A reference group (n = 8 was kept under office-like illuminance (500 lux at a 10:14 light:dark cycle. Episodes of bright light (15 000 lux were super-imposed on this background as follows. Paradigm I: exposure to constant bright light for either 1 hour (n = 5, 2 hours (n = 5, 5 hours (n = 4 or 10 hours (n = 4. Paradigm II: exposure to repeated cycles of bright light with 50% duty cycle and either 60 minutes (n = 7, 30 minutes (n = 8, 15 minutes (n = 6, 7 minutes (n = 7 or 1 minute (n = 7 periods, provided for 10 hours. Refraction and axial length were measured prior to and immediately after the 5-day experiment. Relative changes were analyzed by paired t-tests, and differences among groups were tested by one-way ANOVA. RESULTS: Compared with the reference group, exposure to continuous bright light for 1 or 2 hours every day had no significant protective effect against deprivation myopia. Inhibition of myopia became significant after 5 hours of bright light exposure but extending the duration to 10 hours did not offer an additional benefit. In comparison, repeated cycles of 1:1 or 7:7 minutes of bright light enhanced the protective effect against myopia and could fully suppress its development. CONCLUSIONS: The protective effect of bright light depends on the exposure duration and, to the intermittent form, the frequency cycle. Compared to the saturation effect of continuous bright light, low frequency cycles of bright light (1:1 min provided the strongest inhibition effect. However, our quantitative results probably might not be directly translated into humans, but rather need further amendments in clinical studies.

  10. Circadian Phase-Shifting Effects of Bright Light, Exercise, and Bright Light + Exercise.

    Science.gov (United States)

    Youngstedt, Shawn D; Kline, Christopher E; Elliott, Jeffrey A; Zielinski, Mark R; Devlin, Tina M; Moore, Teresa A

    2016-02-26

    Limited research has compared the circadian phase-shifting effects of bright light and exercise and additive effects of these stimuli. The aim of this study was to compare the phase-delaying effects of late night bright light, late night exercise, and late evening bright light followed by early morning exercise. In a within-subjects, counterbalanced design, 6 young adults completed each of three 2.5-day protocols. Participants followed a 3-h ultra-short sleep-wake cycle, involving wakefulness in dim light for 2h, followed by attempted sleep in darkness for 1 h, repeated throughout each protocol. On night 2 of each protocol, participants received either (1) bright light alone (5,000 lux) from 2210-2340 h, (2) treadmill exercise alone from 2210-2340 h, or (3) bright light (2210-2340 h) followed by exercise from 0410-0540 h. Urine was collected every 90 min. Shifts in the 6-sulphatoxymelatonin (aMT6s) cosine acrophase from baseline to post-treatment were compared between treatments. Analyses revealed a significant additive phase-delaying effect of bright light + exercise (80.8 ± 11.6 [SD] min) compared with exercise alone (47.3 ± 21.6 min), and a similar phase delay following bright light alone (56.6 ± 15.2 min) and exercise alone administered for the same duration and at the same time of night. Thus, the data suggest that late night bright light followed by early morning exercise can have an additive circadian phase-shifting effect.

  11. Deposition and characterization of sputtered hexaboride coatings

    International Nuclear Information System (INIS)

    Waldhauser, W.

    1996-06-01

    Hexaborides of the rare-earth elements ReB 6 are potential materials for cathode applications since they combine properties such as low work function, good electrical conductivity, high melting point as well as low volatility at high temperatures. Due to their high hardness and colorations ranging from blue to purple these compounds are also considered for applications to coatings for decoration of consumer products. At present, either rods of sintered LaB 6 or single LaB 6 crystals are indirectly heated to induce emission. In this workboride coatings were deposited onto various substrates employing non-reactive magnetron sputtering from LaB 6 , CeB 6 , SmB 6 and YB 6 targets. Coatings deposited were examined using scanning electron microscopy, X-ray diffraction, electron probe microanalysis. Vickers microhardness, colorimeter and spectroscopic ellipsometry measurements. Electron emission characteristics of the coatings were studied by the thermionic emission and the contact potential method. After optimization of the sputtering parameters fine-columnar or partially amorphous films with atomic ratios of boron to metal in the order of 5 to 7.5 were obtained. The tendency to form the corresponding hexaboride phase decreases from LaB 6 , CeB 6 and SmB 6 to YB 6 . The work function was measured to be in the range of 2.6 to 3.3 eV. Vickers microhardness values lie between 1500 and 2000 HVO.01. LaB 6 coatings showed the most pronounced visual color impression corresponding to dark violet. The results obtained indicate that sputtered hexaboride films are well suited for decorative and thermionic applications. (author)

  12. An EDDY/particle-in-cell simulation of erosion of plasma facing walls bombarded by a collisional plasma

    International Nuclear Information System (INIS)

    Inai, Kensuke; Ohya, Kaoru

    2011-01-01

    To investigate the erosion of a plasma-facing wall intersecting an oblique magnetic field, we performed a kinetic particle-in-cell (PIC) simulation of magnetized plasma, in which collision processes between charged and neutral particles were taken into account. Sheath formation and local physical quantities, such as the incident angle and energy distributions of plasma ions at the wall, were examined at a plasma density of 10 18 m -3 , a temperature of 10 eV, and a magnetic field strength of 5 T. The erosion rate of a carbon wall was calculated using the ion-solid interaction code EDDY. At a high neutral density (>10 20 m -3 ), the impact energy of the ions dropped below the threshold for physical sputtering, so that the sputtering yield was drastically decreased and wall erosion was strongly suppressed. Sputter erosion was also suppressed when the angle of the magnetic field with respect to the surface normal was sufficiently large. (author)

  13. Reactive sputter deposition of boron nitride

    International Nuclear Information System (INIS)

    Jankowski, A.F.; Hayes, J.P.; McKernan, M.A.; Makowiecki, D.M.

    1995-10-01

    The preparation of fully dense, boron targets for use in planar magnetron sources has lead to the synthesis of Boron Nitride (BN) films by reactive rf sputtering. The deposition parameters of gas pressure, flow and composition are varied along with substrate temperature and applied bias. The films are characterized for composition using Auger electron spectroscopy, for chemical bonding using Raman spectroscopy and for crystalline structure using transmission electron microscopy. The deposition conditions are established which lead to the growth of crystalline BN phases. In particular, the growth of an adherent cubic BN coating requires 400--500 C substrate heating and an applied -300 V dc bias

  14. Development of the sputter coater for hotcell

    Energy Technology Data Exchange (ETDEWEB)

    Chun, Yong Bum; Kwon, H. M.; Chun, Y. B.; Yang, Y. S.; Joo, J. S.; Jang, N. M

    2007-05-15

    In last december, the Wavelength Dispersive Spectroscopy (WDS) was installed on the shielded SEM of PIEF, KAERI. Before the first major WDS analysis service at the end of 2007, one among the prior technologies, the hot-cell sputter coater was remodelled from a commercial product and set up inside the glove box. This report describes effects of a coating layer on quantitative analysis, the remodelling of a coater suited to hot-cell, and the performance test of the remodelled coater. Also, written in 1998 was revised and appended to the report.

  15. Thermal conductivity of sputtered amorphous Ge films

    International Nuclear Information System (INIS)

    Zhan, Tianzhuo; Xu, Yibin; Goto, Masahiro; Tanaka, Yoshihisa; Kato, Ryozo; Sasaki, Michiko; Kagawa, Yutaka

    2014-01-01

    We measured the thermal conductivity of amorphous Ge films prepared by magnetron sputtering. The thermal conductivity was significantly higher than the value predicted by the minimum thermal conductivity model and increased with deposition temperature. We found that variations in sound velocity and Ge film density were not the main factors in the high thermal conductivity. Fast Fourier transform patterns of transmission electron micrographs revealed that short-range order in the Ge films was responsible for their high thermal conductivity. The results provide experimental evidences to understand the underlying nature of the variation of phonon mean free path in amorphous solids

  16. Do Low Surface Brightness Galaxies Host Stellar Bars?

    Energy Technology Data Exchange (ETDEWEB)

    Cervantes Sodi, Bernardo; Sánchez García, Osbaldo, E-mail: b.cervantes@irya.unam.mx, E-mail: o.sanchez@irya.unam.mx [Instituto de Radioastronomía y Astrofísica, Universidad Nacional Autónoma de México, Campus Morelia, A.P. 3-72, C.P. 58089 Michoacán, México (Mexico)

    2017-09-20

    With the aim of assessing if low surface brightness galaxies host stellar bars and by studying the dependence of the occurrence of bars as a function of surface brightness, we use the Galaxy Zoo 2 data set to construct a large volume-limited sample of galaxies and then segregate these galaxies as having low or high surface brightness in terms of their central surface brightness. We find that the fraction of low surface brightness galaxies hosting strong bars is systematically lower than that found for high surface brightness galaxies. The dependence of the bar fraction on the central surface brightness is mostly driven by a correlation of the surface brightness with the spin and the gas richness of the galaxies, showing only a minor dependence on the surface brightness. We also find that the length of the bars is strongly dependent on the surface brightness, and although some of this dependence is attributed to the gas content, even at a fixed gas-to-stellar mass ratio, high surface brightness galaxies host longer bars than their low surface brightness counterparts, which we attribute to an anticorrelation of the surface brightness with the spin.

  17. Do Low Surface Brightness Galaxies Host Stellar Bars?

    International Nuclear Information System (INIS)

    Cervantes Sodi, Bernardo; Sánchez García, Osbaldo

    2017-01-01

    With the aim of assessing if low surface brightness galaxies host stellar bars and by studying the dependence of the occurrence of bars as a function of surface brightness, we use the Galaxy Zoo 2 data set to construct a large volume-limited sample of galaxies and then segregate these galaxies as having low or high surface brightness in terms of their central surface brightness. We find that the fraction of low surface brightness galaxies hosting strong bars is systematically lower than that found for high surface brightness galaxies. The dependence of the bar fraction on the central surface brightness is mostly driven by a correlation of the surface brightness with the spin and the gas richness of the galaxies, showing only a minor dependence on the surface brightness. We also find that the length of the bars is strongly dependent on the surface brightness, and although some of this dependence is attributed to the gas content, even at a fixed gas-to-stellar mass ratio, high surface brightness galaxies host longer bars than their low surface brightness counterparts, which we attribute to an anticorrelation of the surface brightness with the spin.

  18. Ion source with radiofrequency mass filter for sputtering purposes

    International Nuclear Information System (INIS)

    Sielanko, J.; Sowa, M.

    1990-01-01

    The Kaufman ion source with radiofrequency mass filter is described. The construction as well as operating characteristics of ion source are presented. The arrangement is suitable for range distribution measurements of implanted layers, where the sputtering rate has to be constant over the wide range of sputtering time. 4 figs., 17 refs. (author)

  19. Low-dose effects in the sputtering of evaporated films

    International Nuclear Information System (INIS)

    Florio, A.R.O.; Alonso, E.V.; Baragiola, R.A.; Ferron, J.

    1983-01-01

    We report measurements of the dose dependence of the sputtering of evaporated films by 30 keV ions under UHV. An initial (sub-monolayer) enhanced sputtering is attributed to the removal of weakly bound atoms; this enhancement does not depend on the incidence angle of the projectile. (author)

  20. Low-dose effects in the sputtering of evaporated films

    Energy Technology Data Exchange (ETDEWEB)

    Florio, A.R.O.; Alonso, E.V.; Baragiola, R.A.; Ferron, J. (Comision Nacional de Energia Atomica, San Carlos de Bariloche (Argentina). Centro Atomico Bariloche)

    1983-05-01

    We report measurements of the dose dependence of the sputtering of evaporated films by 30 keV ions under UHV. An initial (sub-monolayer) enhanced sputtering is attributed to the removal of weakly bound atoms; this enhancement does not depend on the incidence angle of the projectile.

  1. Formation of large clusters during sputtering of silver

    International Nuclear Information System (INIS)

    Staudt, C.; Heinrich, R.; Wucher, A.

    2000-01-01

    We have studied the formation of polyatomic clusters during sputtering of metal surfaces by keV ion bombardment. Both positively charged (secondary cluster ions) and neutral clusters have been detected in a time-of-flight mass spectrometer under otherwise identical experimental conditions, the sputtered neutrals being post-ionized by single photon absorption using a pulsed 157 nm VUV laser beam. Due to the high achievable laser intensity, the photoionization of all clusters could be saturated, thus enabling a quantitative determination of the respective partial sputtering yields. We find that the relative yield distributions of sputtered clusters are strongly correlated with the total sputtering yield in a way that higher yields lead to higher abundances of large clusters. By using heavy projectile ions (Xe + ) in connection with bombarding energies up to 15 keV, we have been able to detect sputtered neutral silver clusters containing up to about 60 atoms. For cluster sizes above 40 atoms, doubly charged species are shown to be produced in the photoionization process with non-negligible efficiency. From a direct comparison of secondary neutral and ion yields, the ionization probability of sputtered clusters is determined as a function of the cluster size. It is demonstrated that even the largest silver clusters are still predominantly sputtered as neutrals

  2. Sputtering of Ge(001): transition between dynamic scaling regimes

    DEFF Research Database (Denmark)

    Smilgies, D.-M.; Eng, P.J.; Landemark, E.

    1997-01-01

    We have studied the dynamic behavior of the Ge(001) surface during sputtering in situ and in real time using synchrotron X-ray diffraction. We find two dynamic regimes as a function of surface temperature and sputter current which are separated by a sharp transition. The boundary between these two...

  3. Sputtering of Thick Deuterium Films by KeV Electrons

    DEFF Research Database (Denmark)

    Thestrup Nielsen, Birgitte; Svendsen, Winnie Edith; Schou, Jørgen

    1994-01-01

    Sputtering of thick films of solid deuterium up to several μm by keV electrons is reported for the first time. The sputtering yield increases within a narrow range of thicknesses around 1.6 μm by about 2 orders of magnitude for 1.5 keV electrons. A similar behavior has not been observed for ion...

  4. RF sputtering: A viable tool for MEMS fabrication

    Indian Academy of Sciences (India)

    being prepared by RF sputtering and their application in MEMS being explored. ... crystallographic properties were evaluated using XRD analysis (CuKα radiation ..... Bhatt V, Pal P, Chandra S 2005 Feasibility study of RF sputtered ZnO film for ...

  5. Sputtering of solid nitrogen by keV helium ions

    DEFF Research Database (Denmark)

    Ellegaard, O.; Schou, Jørgen; Sørensen, H.

    1993-01-01

    Solid nitrogen has become a standard material among the frozen molecular gases for electronic sputtering. We have combined measurements of sputtering yields and energy spectra from nitrogen bombarded by 4-10 keV helium ions. The data show that the erosion is electronic rather than knockon...

  6. Bright solitons in Bose-Fermi mixtures

    International Nuclear Information System (INIS)

    Karpiuk, Tomasz; Brewczyk, Miroslaw; RzaPewski, Kazimierz

    2006-01-01

    We consider the formation of bright solitons in a mixture of Bose and Fermi degenerate gases confined in a three-dimensional elongated harmonic trap. The Bose and Fermi atoms are assumed to effectively attract each other whereas bosonic atoms repel each other. Strong enough attraction between bosonic and fermionic components can change the character of the interaction within the bosonic cloud from repulsive to attractive making thus possible the generation of bright solitons in the mixture. On the other hand, such structures might be in danger due to the collapse phenomenon existing in attractive gases. We show, however, that under some conditions (defined by the strength of the Bose-Fermi components attraction) the structures which neither spread nor collapse can be generated. For elongated enough traps the formation of solitons is possible even at the 'natural' value of the mutual Bose-Fermi ( 87 Rb- 40 K in our case) scattering length

  7. Extreme Ultraviolet Explorer Bright Source List

    Science.gov (United States)

    Malina, Roger F.; Marshall, Herman L.; Antia, Behram; Christian, Carol A.; Dobson, Carl A.; Finley, David S.; Fruscione, Antonella; Girouard, Forrest R.; Hawkins, Isabel; Jelinsky, Patrick

    1994-01-01

    Initial results from the analysis of the Extreme Ultraviolet Explorer (EUVE) all-sky survey (58-740 A) and deep survey (67-364 A) are presented through the EUVE Bright Source List (BSL). The BSL contains 356 confirmed extreme ultraviolet (EUV) point sources with supporting information, including positions, observed EUV count rates, and the identification of possible optical counterparts. One-hundred twenty-six sources have been detected longward of 200 A.

  8. High-brightness H/sup -/ accelerators

    International Nuclear Information System (INIS)

    Jameson, R.A.

    1987-01-01

    Neutral particle beam (NPB) devices based on high-brightness H/sup -/ accelerators are an important component of proposed strategic defense systems. The basic rational and R and D program are outlined and examples given of the underlying technology thrusts toward advanced systems. Much of the research accomplished in the past year is applicable to accelerator systems in general; some of these activities are discussed

  9. Brightness of synchrotron radiation from wigglers

    International Nuclear Information System (INIS)

    Geloni, Gianluca; Kocharyan, Vitali; Saldin, Evgeni

    2014-12-01

    According to literature, while calculating the brightness of synchrotron radiation from wigglers, one needs to account for the so called 'depth-of-field' effects. In fact, the particle beam cross section varies along the wiggler. It is usually stated that the effective photon source size increases accordingly, while the brightness is reduced. Here we claim that this is a misconception originating from an analysis of the wiggler source based on geometrical arguments, regarded as almost self-evident. According to electrodynamics, depth-of-field effects do not exist: we demonstrate this statement both theoretically and numerically, using a well-known first-principle computer code. This fact shows that under the usually accepted approximations, the description of the wiggler brightness turns out to be inconsistent even qualitatively. Therefore, there is a need for a well-defined procedure for computing the brightness from a wiggler source. We accomplish this task based on the use of a Wigner function formalism. In the geometrical optics limit computations can be performed analytically. Within this limit, we restrict ourselves to the case of the beam size-dominated regime, which is typical for synchrotron radiation facilities in the X-ray wavelength range. We give a direct demonstration of the fact that the apparent horizontal source size is broadened in proportion to the beamline opening angle and to the length of the wiggler. While this effect is well-understood, a direct proof appears not to have been given elsewhere. We consider the problem of the calculation of the wiggler source size by means of numerical simulations alone, which play the same role of an experiment. We report a significant numerical disagreement between exact calculations and approximations currently used in literature.

  10. Modular Zero Energy. BrightBuilt Home

    Energy Technology Data Exchange (ETDEWEB)

    Aldrich, Robb [Steven Winter Associates, Inc., Norwalk, CT (United States); Butterfield, Karla [Steven Winter Associates, Inc., Norwalk, CT (United States)

    2016-03-01

    With funding from the Building America Program, part of the U.S. Department of Energy Building Technologies Office, the Consortium for Advanced Residential Buildings (CARB) worked with BrightBuilt Home (BBH) to evaluate and optimize building systems. CARB’s work focused on a home built by Black Bros. Builders in Lincolnville, Maine (International Energy Conservation Code Climate Zone 6). As with most BBH projects to date, modular boxes were built by Keiser Homes in Oxford, Maine.

  11. The surface brightness of spiral galaxies: Pt. 4

    International Nuclear Information System (INIS)

    Phillipps, S.; Disney, M.; Ohio State Univ., Columbus

    1988-01-01

    Using measurements from IRAS correlations are found between optical surface brightness and both infrared-to-optical flux ratio and infrared colour temperature, in the sense that galaxies with high surface brightness have higher FIR emission and higher temperatures. (author)

  12. Modelling of the reactive sputtering process with non-uniform discharge current density and different temperature conditions

    International Nuclear Information System (INIS)

    Vasina, P; Hytkova, T; Elias, M

    2009-01-01

    The majority of current models of the reactive magnetron sputtering assume a uniform shape of the discharge current density and the same temperature near the target and the substrate. However, in the real experimental set-up, the presence of the magnetic field causes high density plasma to form in front of the cathode in the shape of a toroid. Consequently, the discharge current density is laterally non-uniform. In addition to this, the heating of the background gas by sputtered particles, which is usually referred to as the gas rarefaction, plays an important role. This paper presents an extended model of the reactive magnetron sputtering that assumes the non-uniform discharge current density and which accommodates the gas rarefaction effect. It is devoted mainly to the study of the behaviour of the reactive sputtering rather that to the prediction of the coating properties. Outputs of this model are compared with those that assume uniform discharge current density and uniform temperature profile in the deposition chamber. Particular attention is paid to the modelling of the radial variation of the target composition near transitions from the metallic to the compound mode and vice versa. A study of the target utilization in the metallic and compound mode is performed for two different discharge current density profiles corresponding to typical two pole and multipole magnetics available on the market now. Different shapes of the discharge current density were tested. Finally, hysteresis curves are plotted for various temperature conditions in the reactor.

  13. Effect of Carbon Concentration on the Sputtering of Carbon-Rich SiC Bombarded by Helium Ions

    Directory of Open Access Journals (Sweden)

    Xinghao Liang

    2018-02-01

    Full Text Available Silicon carbide (SiC is considered as an important material for nuclear engineering due to its excellent properties. Changing the carbon content in SiC can regulate and control its elastic and thermodynamic properties, but a simulation study of the effect of carbon content on the sputtering (caused by the helium ions of SiC is still lacking. In this work, we used the Monte-Carlo and molecular dynamics simulation methods to study the effects of carbon concentration, incidence energy, incident angle, and target temperature on the sputtering yield of SiC. The results show that the incident ions’ energy and angle have a significant effect on sputtering yield of SiC when the carbon concentration in SiC is around 62 at %, while the target temperature has a little effect on the sputtering yield of SiC. Our work might provide theoretical support for the experimental research and engineering application of carbon fiber-reinforced SiC that be used as the plasma-facing material in tokamak fusion reactors.

  14. Modelling of low energy ion sputtering from oxide surfaces

    International Nuclear Information System (INIS)

    Kubart, T; Nyberg, T; Berg, S

    2010-01-01

    The main aim of this work is to present a way to estimate the values of surface binding energy for oxides. This is done by fitting results from the binary collisions approximation code Tridyn with data from the reactive sputtering processing curves, as well as the elemental composition obtained from x-ray photoelectron spectroscopy (XPS). Oxide targets of Al, Ti, V, Nb and Ta are studied. The obtained surface binding energies are then used to predict the partial sputtering yields. Anomalously high sputtering yield is observed for the TiO 2 target. This is attributed to the high sputtering yield of Ti lower oxides. Such an effect is not observed for the other studied metals. XPS measurement of the oxide targets confirms the formation of suboxides during ion bombardment as well as an oxygen deficient surface in the steady state. These effects are confirmed from the processing curves from the oxide targets showing an elevated sputtering rate in pure argon.

  15. Simulation of carbon sputtering due to molecular hydrogen impact

    International Nuclear Information System (INIS)

    Laszlo, J.

    1993-01-01

    Simulated results are compared to experimental data on the sputtering yield of carbon due to atomic and to molecular hydrogen impact. The experimental sputtering yields of carbon (graphite) due to low energy hydrogen bombardment have been found to be higher than the simulated ones. Efforts are made to obtain high enough simulated yields by considering the formation of dimer, H 2 and D 2 molecules in the primary beam. The molecular beam model applies full neutralization and full dissociation at the surface. The simulation of sputtering yields of target materials up to Z 2 ≤ 30 is also included for the low primary energy regime for deuterium projectiles. It is found that, although the sputtering yields really tend to increase, the effect of molecule formation in the beam in itself cannot be made responsible for the deviation between measured and simulated sputtering yields. (orig.)

  16. Search for bright stars with infrared excess

    Energy Technology Data Exchange (ETDEWEB)

    Raharto, Moedji, E-mail: moedji@as.itb.ac.id [Astronomy Research Division, Faculty of Mathematics and Natural Sciences, Institut Teknologi Bandung, Jl. Ganesha 10, Bandung 40132 (Indonesia)

    2014-03-24

    Bright stars, stars with visual magnitude smaller than 6.5, can be studied using small telescope. In general, if stars are assumed as black body radiator, then the color in infrared (IR) region is usually equal to zero. Infrared data from IRAS observations at 12 and 25μm (micron) with good flux quality are used to search for bright stars (from Bright Stars Catalogues) with infrared excess. In magnitude scale, stars with IR excess is defined as stars with IR color m{sub 12}−m{sub 25}>0; where m{sub 12}−m{sub 25} = −2.5log(F{sub 12}/F{sub 25})+1.56, where F{sub 12} and F{sub 25} are flux density in Jansky at 12 and 25μm, respectively. Stars with similar spectral type are expected to have similar color. The existence of infrared excess in the same spectral type indicates the existence of circum-stellar dust, the origin of which is probably due to the remnant of pre main-sequence evolution during star formation or post AGB evolution or due to physical process such as the rotation of those stars.

  17. Condensate bright solitons under transverse confinement

    International Nuclear Information System (INIS)

    Salasnich, L.; Reatto, L.; Parola, A.

    2002-01-01

    We investigate the dynamics of Bose-Einstein condensate bright solitons made of alkali-metal atoms with negative scattering length and under harmonic confinement in the transverse direction. Contrary to the one-dimensional (1D) case, the 3D bright soliton exists only below a critical attractive interaction that depends on the extent of confinement. Such a behavior is also found in multisoliton condensates with box boundary conditions. We obtain numerical and analytical estimates of the critical strength beyond which the solitons do not exist. By using an effective 1D nonpolynomial nonlinear Schroedinger equation, which accurately takes into account the transverse dynamics of cigarlike condensates, we numerically simulate the dynamics of the 'soliton train' reported in a recent experiment [Nature (London) 417, 150 (2002)]. Then, analyzing the macroscopic quantum tunneling of the bright soliton on a Gaussian barrier, we find that its interference in the tunneling region is strongly suppressed with respect to nonsolitonic case; moreover, the tunneling through a barrier breaks the shape invariance of the matter wave. Finally, we show that the collapse of the soliton is induced by the scattering on the barrier or by the collision with another matter wave when the density reaches a critical value, for which we derive an accurate analytical formula

  18. Possible Bright Starspots on TRAPPIST-1

    Science.gov (United States)

    Morris, Brett M.; Agol, Eric; Davenport, James R. A.; Hawley, Suzanne L.

    2018-04-01

    The M8V star TRAPPIST-1 hosts seven roughly Earth-sized planets and is a promising target for exoplanet characterization. Kepler/K2 Campaign 12 observations of TRAPPIST-1 in the optical show an apparent rotational modulation with a 3.3-day period, though that rotational signal is not readily detected in the Spitzer light curve at 4.5 μm. If the rotational modulation is due to starspots, persistent dark spots can be excluded from the lack of photometric variability in the Spitzer light curve. We construct a photometric model for rotational modulation due to photospheric bright spots on TRAPPIST-1 that is consistent with both the Kepler and Spitzer light curves. The maximum-likelihood model with three spots has typical spot sizes of R spot/R ⋆ ≈ 0.004 at temperature T spot ≳ 5300 ± 200 K. We also find that large flares are observed more often when the brightest spot is facing the observer, suggesting a correlation between the position of the bright spots and flare events. In addition, these flares may occur preferentially when the spots are increasing in brightness, which suggests that the 3.3-day periodicity may not be a rotational signal, but rather a characteristic timescale of active regions.

  19. Thermal conductivities of thin, sputtered optical films

    International Nuclear Information System (INIS)

    Henager, C.H. Jr.; Pawlewicz, W.T.

    1991-05-01

    The normal component of the thin film thermal conductivity has been measured for the first time for several advanced sputtered optical materials. Included are data for single layers of boron nitride (BN), aluminum nitride (AIN), silicon aluminum nitride (Si-Al-N), silicon aluminum oxynitride (Si-Al-O-N), silicon carbide (SiC), and for dielectric-enhanced metal reflectors of the form Al(SiO 2 /Si 3 N 4 ) n and Al(Al 2 O 3 /AIN) n . Sputtered films of more conventional materials like SiO 2 , Al 2 O 3 , Ta 2 O 5 , Ti, and Si have also been measured. The data show that thin film thermal conductivities are typically 10 to 100 times lower than conductivities for the same materials in bulk form. Structural disorder in the amorphous or very fine-grained films appears to account for most of the conductivity difference. Conclusive evidence for a film/substrate interface contribution is presented

  20. Evolution of film temperature during magnetron sputtering

    International Nuclear Information System (INIS)

    Shaginyan, L.R.; Han, J.G.; Shaginyan, V.R.; Musil, J.

    2006-01-01

    We report on the results of measurements of the temperature T F surf which developed on the surface of films deposited by magnetron sputtering of chromium and copper targets on cooling and non-cooling silicon substrates. The T F surf and substrate temperature (T s ) were simultaneously measured using high-resolution IR camera and thermocouple, respectively. We revealed that the T F surf steeply grows, keeps constant when it achieves saturation level, and rapidly drops to the value of the T s after stopping the deposition. At the same time, the T s either does not change for the case of cooling substrate or increases to a certain level for noncooling substrate. However, in both cases the T s remains several times lower than the T F surf . The T F surf is proportional to the flux of energy delivered to the growth surface by sputtered atoms and other fast particles, weakly depends on the depositing metal and can achieve several hundreds of deg. C. This phenomenon is explained by a model assuming formation of a hot thin surface layer (HTSL) on the top of the growing film, which exists only during film deposition and exhibits extremely low thermal conductivity. Due to this unique property the temperature T F surf of HTSL is several times higher than the T s . Variations in the T F surf fairly correlate with structure changes of Cr films along thickness investigated in detail previously

  1. Experimental and analytical study of the sputtering phenomena

    International Nuclear Information System (INIS)

    Howard, P.A.

    1976-03-01

    One form of the sputtering phenomena, the heat-transfer process that occurs when an initially hot vertical surface is cooled by a falling liquid film, was examined from a new experimental approach. The sputtering front is the lowest wetted position on the vertical surface and is characterized by a short region of intense nucleate boiling. The sputtering front progresses downward at nearly a constant rate, the surface below the sputtering front being dry and almost adiabatic. This heat-transfer process is of interest in the analysis of some of the performance aspects of emergency core-cooling systems of light-water reactors. An experimental apparatus was constructed to examine the heat-transfer characteristics of a sputtering front. In the present study, a heat source of sufficient intensity was located immediately below the sputtering front, which prevented its downward progress, thus permitting detailed measurements of steady-state surface temperatures throughout a sputtering front. Experimental evidence showed the sputtering front to correspond to a critical heat-flux (CHF) phenomenon. Data were obtained with water flow rates of 350-1600 lb/sub m//hr-ft and subcoolings of 40-140 0 F on a 3 / 8 -in. solid copper rod at 1 atm. A two-dimensional analytical model was developed to describe a stationary sputtering front where the wet-dry interface corresponds to a CHF phenomena and the dry zone is adiabatic. This model is nonlinear because of the temperature dependence of the heat-transfer coefficient in the wetted region and has yielded good agreement with data. A simplified one-dimensional approximation was developed which adequately describes these data. Finally, by means of a coordinate transformation and additional simplifying assumptions, this analysis was extended to analyze moving sputtering fronts, and reasonably good agreement with reported data was shown

  2. Advanced capabilities and applications of a sputter-RBS system

    International Nuclear Information System (INIS)

    Brijs, B.; Deleu, J.; Beyer, G.; Vandervorst, W.

    1999-01-01

    In previous experiments, sputter-RBS 1 has proven to be an ideal tool to study the interaction of low energy ions. This contribution employs the same methodology to identify surface contamination induced during sputtering and to the determine absolute sputter yields. In the first experiment ERDA analysis was used to study the evolution of Hydrogen contamination during sputter-RBS experiments. Since the determination of Hydrogen concentration in very thin near surface layers is frequently limited by the presence of a strong surface peak of Hydrogen originating from adsorbed contamination of the residual vacuum, removal of this contamination would increase the sensitivity for Hydrogen detection in the near sub surface drastically. Therefore low energy (12 keV) Argon sputtering was used to remove the Hydrogen surface peak. However enhanced Hydrogen adsorption was observed related to the Ar dose. This experiment shows that severe vacuum conditions and the use of high current densities/sputter yields are a prerequisite for an efficient detection of Hydrogen in the near surface layers. In the second experiment, an attempt was made to determine the sputter yield of Cu during low energy (12 keV) Oxygen bombardment. In order to determine the accumulated dose of the low energy ion beam, a separate Faraday cup in combination with a remote controlled current have been added to the existing sputter-RBS set-up. Alternating sputtering and RBS analysis seem to be an adequate tool for the determination of the absolute sputter yield of Cu and this as well in the as under steady state conditions

  3. Sputtering effect of low-energy ions on biological target: The analysis of sputtering product of urea and capsaicin

    International Nuclear Information System (INIS)

    Zhang, Lili; Xu, Xue; Wu, Yuejin

    2013-01-01

    Sputtering is a process whereby atoms are ejected from a solid target material due to bombardment of the target by energetic particles. Recent years, ion implantation was successfully applied to biological research based on the fragments sputtering and form open paths in cell structure caused by ion sputtering. In this study, we focused on urea and chilli pepper pericarp samples implanted with N + and Ar + ions. To investigate the sputtering effect, we designed a collecting unit containing a disk sample and a glass pipe. The urea content and capsaicin content recovered from glass pipes were adopted to represent the sputtering product. The result of urea showed that the sputtering effect is positively correlated with the ion energy and dose, also affected by the ion type. The result of capsaicin was different from that of urea at 20 keV and possibly due to biological complex composition and structure. Therefore the sputtering yield depended on both the parameters of incident ions and the state of target materials. The sputtering yield of urea was also simulated by computational method achieved through the TRIM program. The trajectories of primary and recoiled atoms were calculated on the basis of the binary collision approximation using Monte Carlo method. The experimental results were much higher than the calculated results. The possible explanation is that in the physical model the target were assumed as a disordered lattice and independent atoms, which is much less complicated than that of the biological models

  4. On a relationship between the geometry of cones on sputtered surfaces and the angular dependence of sputtered yields

    International Nuclear Information System (INIS)

    Chadderton, L.T.

    1977-01-01

    It is widely believed that the phenomenon responsible for the familiar peak in the angular dependence of sputtered yields also gives rise to characteristic semiangles α of conical protruberances on sputtered surfaces. It is shown that α corresponds to the process giving rise to the minimum rather than the maximum. No accurate measurements of the minimum have yet been made. (Auth.)

  5. TiCx thin films coatings prepared by reactive sputtering

    International Nuclear Information System (INIS)

    Saoula, N.; Handa, K.; Kesri, R.

    2004-01-01

    Full text.Transition metal carbides and nitrides attract large technological interest due to their unique properties like high hardness and young modulus, high electric conductivity, a considerable high-temperature strength, high corrosion resistance and high melting or decomposition temperatures. They have been applied as coatings for tools because of their superior properties. these materials have such properties due to atomic bonding, which shows a mixed covalent, metallic and ionic character. Among these nitrides and carbides titanium carbide is a compound of particular importance. Titanium carbide combines the advantages of a high melting point (3140 celsius degree) and hardness (3000 Hv) with those of relative lightness (density 4.93 10 3 Kg m -3 ).It also exhibits high resistance to both corrosion and oxidation and a relatively low friction coefficient. Usually, TiC films are produced by deposition with plasma-enhanced CVD (PCVD), thermal chemical vapour deposition (CVD) or activated reactive evaporation methods. However, these methods require high temperature (>600 celsius degree) substrates to achieve the deposition, which sometimes causes thermal damage to the deposited films. At temperature above 550 celsius degree, thermal diffusion of materials not suitable may also occur. In addition, it has been reported that the maximum temperature which permits the appropriate coating of hardened steel tools is 500 celsius degree. Therefore, it is desirable to develop a deposition technique for TiC films using low-temperature substrates to avoid thermal damage. So, different physical vapour deposition (PVD) processes for deposition of TiC at relatively low temperatures have been used through the years. These processes are based on vaporisation of titanium in hydrocarbon atmosphere or on sputtering of solid TiC target or titanium target in hydrocarbon atmosphere. the most often-used hydrocarbon gases are methane, acetylene, ethene and ethane. In previous works, we

  6. Star formation and the surface brightness of spiral galaxies

    International Nuclear Information System (INIS)

    Phillipps, S.; Disney, M.

    1985-01-01

    The (blue) surface brightness of spiral galaxies is significantly correlated with their Hα linewidth. This can be most plausibly interpreted as a correlation of surface brightness with star formation rate. There is also a significant difference in surface brightness between galaxies forming stars in a grand design spiral pattern and those with floc star formation regions. (author)

  7. Studies on ion scattering and sputtering processes relevant to ion beam sputter deposition of multicomponent thin films

    International Nuclear Information System (INIS)

    Auciello, O.; Ameen, M.S.; Kingon, A.I.

    1989-01-01

    Results from computer simulation and experiments on ion scattering and sputtering processes in ion beam sputter deposition of high Tc superconducting and ferroelectric thin films are presented. It is demonstrated that scattering of neutralized ions from the targets can result in undesirable erosion of, and inert gas incorporation in, the growing films, depending on the ion/target atom ass ratio and ion beam angle of incidence/target/substrate geometry. The studies indicate that sputtering Kr + or Xe + ions is preferable to the most commonly used Ar + ions, since the undesirable phenomena mentioned above are minimized for the first two ions. These results are used to determine optimum sputter deposition geometry and ion beam parameters for growing multicomponent oxide thin films by ion beam sputter-deposition. 10 refs., 5 figs

  8. Hydrogen superpermeable membrane operation under plasma conditions

    International Nuclear Information System (INIS)

    Bacal, M.; Bruneteau, A.M.; Livshits, A.I.; Alimov, V.N.; Notkin, M.E.

    2003-01-01

    The effect of ion bombardment on hydrogen plasma-driven permeation through a superpermeable niobium membrane was investigated. It was found that the increase of membrane temperature and the doping of membrane material with oxygen results in the decrease of ion bombardment effect and in permeability increase. It was demonstrated that membrane decarbonization leads to the formation of a membrane state resistant to sputtering. Possible applications of the membrane resistant to ion bombardment as plasma facing components are considered

  9. Deposition of lead-silicate glassy thin coatings by RF magnetron sputtering: Correlation between deposition parameters and electrical and structural properties

    International Nuclear Information System (INIS)

    Rigato, V.; Maggioni, G.; Boscarino, D.; Della Mea, G.; Univ. di Trento, Mesiano

    1996-01-01

    Lead-silicate glassy thin films produced by means of Reactive Radio Frequency Magnetron Sputtering have found recent application in the development of MicroStrip Gas Chambers radiation detectors. Here, thin films (100--400 nm) of lead silicate glass have been deposited by RF magnetron sputtering in Ar plasma at different discharge conditions. The interaction of the sputtered species with the gas atoms during the transport process through the discharge region and the kinetics of growth of the films have been investigated as a function of the target composition and of the substrate temperature. This study demonstrates the possibility of controlling the surface electrical resistance of the films in a wide range of values ranging from 10 12 to 10 17 Ω/□ during the film growth

  10. ZrN coatings deposited by high power impulse magnetron sputtering and cathodic arc techniques

    Energy Technology Data Exchange (ETDEWEB)

    Purandare, Yashodhan, E-mail: Y.Purandare@shu.ac.uk; Ehiasarian, Arutiun; Hovsepian, Papken [Nanotechnology Centre for PVD Research, Materials and Engineering Research Institute, Sheffield Hallam University, Sheffield S1 1WB (United Kingdom); Santana, Antonio [Ionbond AG Olten, Industriestrasse 211, CH-4600 Olten (Switzerland)

    2014-05-15

    Zirconium nitride (ZrN) coatings were deposited on 1 μm finish high speed steel and 316L stainless steel test coupons. Cathodic Arc (CA) and High Power Impulse Magnetron Sputtering (HIPIMS) + Unbalanced Magnetron Sputtering (UBM) techniques were utilized to deposit coatings. CA plasmas are known to be rich in metal and gas ions of the depositing species as well as macroparticles (droplets) emitted from the arc sports. Combining HIPIMS technique with UBM in the same deposition process facilitated increased ion bombardment on the depositing species during coating growth maintaining high deposition rate. Prior to coating deposition, substrates were pretreated with Zr{sup +} rich plasma, for both arc deposited and HIPIMS deposited coatings, which led to a very high scratch adhesion value (L{sub C2}) of 100 N. Characterization results revealed the overall thickness of the coatings in the range of 2.5 μm with hardness in the range of 30–40 GPa depending on the deposition technique. Cross-sectional transmission electron microscopy and tribological experiments such as dry sliding wear tests and corrosion studies have been utilized to study the effects of ion bombardment on the structure and properties of these coatings. In all the cases, HIPIMS assisted UBM deposited coating fared equal or better than the arc deposited coatings, the reasons being discussed in this paper. Thus H+U coatings provide a good alternative to arc deposited where smooth, dense coatings are required and macrodroplets cannot be tolerated.

  11. Improvement of dielectric properties of BLT thin films deposited by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Besland, M P; Barroy, P R J; Richard-Plouet, M; Tessier, P Y; Brohan, L; Djouadi, M A [Universite de Nantes - Institut des Materiaux Jean Rouxel, UMR CNRS 6502, 2, rue de la Houssiniere BP32229, 44322 Nantes Cedex (France); Borderon, C; Tacon, S Le; Averty, D; Gundel, H W [Institut de Recherche en Electrotechnique et Electronique de Nantes Atlantique, UPRES-EA 1770, IREENA, Universite de Nantes, 2, rue de la Houssiniere, BP 92208, 44322 Nantes Cedex (France)], E-mail: Marie-Paule.Besland@cnrs-imn.fr

    2008-01-15

    Well crystallized BLT thin films were deposited by RF magnetron sputtering using a target of Aurivillius phase Bi{sub 3.25}La{sub 0.75}Ti{sub 3}O{sub 12}(BLT{sub 0,75}), elaborated in our institute. RF sputtering experiments were performed at room temperature with an argon/oxygen mixture, in a pressure range of 20-50 mTorr. Optimisation of the plasma parameters, namely deposition pressure, RF power and oxygen content in the gas phase, allows obtaining BLT films with a chemical composition close to Bi{sub 3.25}La{sub 0.75}Ti{sub 3}O{sub 12}. After ex-situ annealing under oxygen atmosphere at 650 deg. C, BLT films deposited on Pt/TiO{sub 2}/SiO{sub 2}/Si (multilayer) substrates exhibit well defined rod-like grains morphology. A two step deposition process appeared to be necessary in order to reach satisfying dielectric properties. The effect of the plasma parameters on the chemical composition and electrical properties are presented and discussed.

  12. Improvement of dielectric properties of BLT thin films deposited by magnetron sputtering

    International Nuclear Information System (INIS)

    Besland, M P; Barroy, P R J; Richard-Plouet, M; Tessier, P Y; Brohan, L; Djouadi, M A; Borderon, C; Tacon, S Le; Averty, D; Gundel, H W

    2008-01-01

    Well crystallized BLT thin films were deposited by RF magnetron sputtering using a target of Aurivillius phase Bi 3.25 La 0.75 Ti 3 O 12 (BLT 0,75 ), elaborated in our institute. RF sputtering experiments were performed at room temperature with an argon/oxygen mixture, in a pressure range of 20-50 mTorr. Optimisation of the plasma parameters, namely deposition pressure, RF power and oxygen content in the gas phase, allows obtaining BLT films with a chemical composition close to Bi 3.25 La 0.75 Ti 3 O 12 . After ex-situ annealing under oxygen atmosphere at 650 deg. C, BLT films deposited on Pt/TiO 2 /SiO 2 /Si (multilayer) substrates exhibit well defined rod-like grains morphology. A two step deposition process appeared to be necessary in order to reach satisfying dielectric properties. The effect of the plasma parameters on the chemical composition and electrical properties are presented and discussed

  13. Electromagnetically induced transparency control in terahertz metasurfaces based on bright-bright mode coupling

    Science.gov (United States)

    Yahiaoui, R.; Burrow, J. A.; Mekonen, S. M.; Sarangan, A.; Mathews, J.; Agha, I.; Searles, T. A.

    2018-04-01

    We demonstrate a classical analog of electromagnetically induced transparency (EIT) in a highly flexible planar terahertz metamaterial (MM) comprised of three-gap split-ring resonators. The keys to achieve EIT in this system are the frequency detuning and hybridization processes between two bright modes coexisting in the same unit cell as opposed to bright-dark modes. We present experimental verification of two bright modes coupling for a terahertz EIT-MM in the context of numerical results and theoretical analysis based on a coupled Lorentz oscillator model. In addition, a hybrid variation of the EIT-MM is proposed and implemented numerically to dynamically tune the EIT window by incorporating photosensitive silicon pads in the split gap region of the resonators. As a result, this hybrid MM enables the active optical control of a transition from the on state (EIT mode) to the off state (dipole mode).

  14. Investigating the Bright End of LSST Photometry

    Science.gov (United States)

    Ojala, Elle; Pepper, Joshua; LSST Collaboration

    2018-01-01

    The Large Synoptic Survey Telescope (LSST) will begin operations in 2022, conducting a wide-field, synoptic multiband survey of the southern sky. Some fraction of objects at the bright end of the magnitude regime observed by LSST will overlap with other wide-sky surveys, allowing for calibration and cross-checking between surveys. The LSST is optimized for observations of very faint objects, so much of this data overlap will be comprised of saturated images. This project provides the first in-depth analysis of saturation in LSST images. Using the PhoSim package to create simulated LSST images, we evaluate saturation properties of several types of stars to determine the brightness limitations of LSST. We also collect metadata from many wide-field photometric surveys to provide cross-survey accounting and comparison. Additionally, we evaluate the accuracy of the PhoSim modeling parameters to determine the reliability of the software. These efforts will allow us to determine the expected useable data overlap between bright-end LSST images and faint-end images in other wide-sky surveys. Our next steps are developing methods to extract photometry from saturated images.This material is based upon work supported in part by the National Science Foundation through Cooperative Agreement 1258333 managed by the Association of Universities for Research in Astronomy (AURA), and the Department of Energy under Contract No. DE-AC02-76SF00515 with the SLAC National Accelerator Laboratory. Additional LSST funding comes from private donations, grants to universities, and in-kind support from LSSTC Institutional Members.Thanks to NSF grant PHY-135195 and the 2017 LSSTC Grant Award #2017-UG06 for making this project possible.

  15. Transport theory of sputtering I: Depth of origin of sputtered atoms

    International Nuclear Information System (INIS)

    Zhang, Zhu Lin

    1999-01-01

    Sputter theory employing a sum of two power cross sections has been implemented. Compared with the well known Lindhard power cross section (V∝r -1/m ), a sum of two such cross sections can give a much better approximation to the Born-Mayer scattering in the low energy region (m ∼ 0.1). By using both one and two power cross sections, we have solved the linear transport equations describing the sputtering problem asymptotically. As usual, electronic stopping is ignored in the analysis. It has further been proved that Falcone's theory of the atom ejection process contradicts transport theory. The Andersen-Sigmund relation for partial sputtering yield ratios between two elements in an arbitrary multicomponent target has been derived by both methods. The energy deposited in the target surface layers has been computed for a few typical ion-target combinations. The numerical curves show that both theories generate almost the same results (error m≥0. The former even may be only about one half of the latter as long as m=0

  16. Selection effects in the bivariate brightness distribution for spiral galaxies

    International Nuclear Information System (INIS)

    Phillipps, S.; Disney, M.

    1986-01-01

    The joint distribution of total luminosity and characteristic surface brightness (the bivariate brightness distribution) is investigated for a complete sample of spiral galaxies in the Virgo cluster. The influence of selection and physical limits of various kinds on the apparent distribution are detailed. While the distribution of surface brightness for bright galaxies may be genuinely fairly narrow, faint galaxies exist right across the (quite small) range of accessible surface brightnesses so no statement can be made about the true extent of the distribution. The lack of high surface brightness bright galaxies in the Virgo sample relative to an overall RC2 sample (mostly field galaxies) supports the contention that the star-formation rate is reduced in the inner region of the cluster for environmental reasons. (author)

  17. Raman beam combining for laser brightness enhancement

    Science.gov (United States)

    Dawson, Jay W.; Allen, Graham S.; Pax, Paul H.; Heebner, John E.; Sridharan, Arun K.; Rubenchik, Alexander M.; Barty, Chrisopher B. J.

    2015-10-27

    An optical source capable of enhanced scaling of pulse energy and brightness utilizes an ensemble of single-aperture fiber lasers as pump sources, with each such fiber laser operating at acceptable pulse energy levels. Beam combining involves stimulated Raman scattering using a Stokes' shifted seed beam, the latter of which is optimized in terms of its temporal and spectral properties. Beams from fiber lasers can thus be combined to attain pulses with peak energies in excess of the fiber laser self-focusing limit of 4 MW while retaining the advantages of a fiber laser system of high average power with good beam quality.

  18. Bright emission lines in new Seyfert galaxies

    International Nuclear Information System (INIS)

    Afanasev, V.L.; Denisiuk, E.K.; Lipovetskii, V.A.; Shapovalova, A.I.

    1983-01-01

    Observational data are given on bright emission lines (H-alpha, H-beta, and forbidden N II, S II, and O III) for 14 recently discovered Seyfert galaxies. The investigated objects can be divided into three groups, which correspond approximately to the first (5 objects), the intermediate (4 objects), and the second (4 objects) Seyfert types. Attention is drawn to the properties of the galaxy Markaryan 1018, which has features of both the first and the second type and is distinguished by the weakness of its emission lines, which is probably due to a gas deficit. 7 references

  19. Sputtering of neutral and ionic indium clusters

    International Nuclear Information System (INIS)

    Ma, Z.; Coon, S.R.; Calaway, W.F.; Pellin, M.J.; Gruen, D.M.; Von Nagy-Felsobuki, E.I.

    1993-01-01

    Secondary neutral and secondary ion cluster yields were measured during the sputtering of a polycrystalline indium surface by normally incident ∼4 keV Ar + ions. In the secondary neutral mass spectra, indium clusters as large as In 32 were observed. In the secondary ion mass spectra, indium clusters up to In 18 + were recorded. Cluster yields obtained from both the neutral and ion channel exhibited a power law dependence on the number of constituent atoms, n, in the cluster, with the exponents measured to be -5.6 and -4. 1, respectively. An abundance drop was observed at n=8, 15, and 16 in both the neutral and ion yield distributions suggesting that the stability of the ion (either secondary ion or photoion) plays a significant role in the observed distributions. In addition, our experiments suggest that unimolecular decomposition of the neutral cluster may also plays an important role in the measured yield distributions

  20. Magnetostrictive thin films prepared by RF sputtering

    International Nuclear Information System (INIS)

    Carabias, I.; Martinez, A.; Garcia, M.A.; Pina, E.; Gonzalez, J.M.; Hernando, A.; Crespo, P.

    2005-01-01

    Fe 80 B 20 thin films have been prepared by ion beam sputtering magnetron on room temperature. The films were fabricated on different substrates to compare the different magnetic and structural properties. In particular the growth of films on flexible substrates (PDMS, Kapton) has been studied to allow a simple integration of the system in miniaturized magnetostrictive devices. X-ray diffraction patterns indicate that films are mainly amorphous although the presence of some Fe nanoparticles cannot be ruled out. The coercive field of thin films ranges between 15 and 35 Oe, depending on substrate. Magnetostriction measurements indicate the strong dependence of the saturation magnetostriction with the substrate. Samples on flexible substrates exhibit a better performance than samples deposited onto glass substrates

  1. Plasma deposition of Au-SiO2 multilayers for surface plasmon resonance based red colored coatings

    NARCIS (Netherlands)

    Takele Beyene, H.T.; Tichelaar, F.D.; Sanden, van de M.C.M.; Creatore, M.; Kondruweit, S.; Szyszka, B.; Pütz, J.

    2010-01-01

    Nanocomposite thin films with metallic nanoparticles embedded in a dielectric material show attractive plasmonic properties due to dielectric and quantum confinement effects. In this work. the expanding thermal plasma chemical vapor deposition in combination with radjo frequency magnetron sputtering

  2. Influence of post-hydrogenation upon electrical, optical and structural properties of hydrogen-less sputter-deposited amorphous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Gerke, S., E-mail: sebastian.gerke@uni-konstanz.de [Department of Physics, University of Konstanz, Konstanz, 78457 (Germany); Becker, H.-W.; Rogalla, D. [RUBION — Central Unit for Ion Beams and Radioisotopes, University of Bochum, Bochum, 44780 (Germany); Singer, F.; Brinkmann, N.; Fritz, S.; Hammud, A.; Keller, P.; Skorka, D.; Sommer, D. [Department of Physics, University of Konstanz, Konstanz, 78457 (Germany); Weiß, C. [Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstraße 2, 79110 Freiburg (Germany); Flege, S. [Department of Materials Science, TU Darmstadt, Darmstadt 64287 (Germany); Hahn, G. [Department of Physics, University of Konstanz, Konstanz, 78457 (Germany); Job, R. [Department of Electrical Engineering and Computer Science, Münster University of Applied Sciences, Steinfurt 48565 (Germany); Terheiden, B. [Department of Physics, University of Konstanz, Konstanz, 78457 (Germany)

    2016-01-01

    Amorphous silicon (a-Si) is common in the production of technical devices and can be deposited by several techniques. In this study intrinsic and doped, hydrogen-less amorphous silicon films are RF magnetron sputter deposited and post-hydrogenated in a remote hydrogen plasma reactor at a temperature of 370 °C. Secondary ion mass spectrometry of a boron doped (p) a-Si layer shows that the concentration of dopants in the sputtered layer becomes the same as present in the sputter-target. Improved surface passivation of phosphorous doped 5 Ω cm, FZ, (n) c-Si can be achieved by post-hydrogenation yielding a minority carrier lifetime of ~ 360 μs finding an optimum for ~ 40 nm thin films, deposited at 325 °C. This relatively low minority carrier lifetime indicates high disorder of the hydrogen-less sputter deposited amorphous network. Post-hydrogenation leads to a decrease of the number of localized states within the band gap. Optical band gaps (Taucs gab as well as E{sub 04}) can be determined to ~ 1.88 eV after post-hydrogenation. High resolution transmission electron microscopy and optical Raman investigations show that the sputtered layers are amorphous and stay like this during post-hydrogenation. As a consequence of the missing hydrogen during deposition, sputtered a-Si forms a rough surface compared to CVD a-Si. Atomic force microscopy points out that the roughness decreases by up to 25% during post-hydrogenation. Nuclear resonant reaction analysis permits the investigation of hydrogen depth profiles and allows determining the diffusion coefficients of several post-hydrogenated samples from of a model developed within this work. A dependency of diffusion coefficients on the duration of post-hydrogenation indicates trapping diffusion as the main diffusion mechanism. Additional Fourier transform infrared spectroscopy measurements show that hardly any interstitial hydrogen exists in the post-hydrogenated a-Si layers. The results of this study open the way for

  3. Next generation diode lasers with enhanced brightness

    Science.gov (United States)

    Ried, S.; Rauch, S.; Irmler, L.; Rikels, J.; Killi, A.; Papastathopoulos, E.; Sarailou, E.; Zimer, H.

    2018-02-01

    High-power diode lasers are nowadays well established manufacturing tools in high power materials processing, mainly for tactile welding, surface treatment and cladding applications. Typical beam parameter products (BPP) of such lasers range from 30 to 50 mm·mrad at several kilowatts of output power. TRUMPF offers a product line of diode lasers to its customers ranging from 150 W up to 6 kW of output power. These diode lasers combine high reliability with small footprint and high efficiency. However, up to now these lasers are limited in brightness due to the commonly used spatial and coarse spectral beam combining techniques. Recently diode lasers with enhanced brightness have been presented by use of dense wavelength multiplexing (DWM). In this paper we report on TRUMPF's diode lasers utilizing DWM. We demonstrate a 2 kW and a 4 kW system ideally suited for fine welding and scanner welding applications. The typical laser efficiency is in the range of 50%. The system offers plug and play exchange of the fiber beam delivery cable, multiple optical outputs and integrated cooling in a very compact package. An advanced control system offers flexible integration in any customer's shop floor environment and includes industry 4.0 capabilities (e.g. condition monitoring and predictive maintenance).

  4. Bright point study. [of solar corona

    Science.gov (United States)

    Tang, F.; Harvey, K.; Bruner, M.; Kent, B.; Antonucci, E.

    1982-01-01

    Transition region and coronal observations of bright points by instruments aboard the Solar Maximum Mission and high resolution photospheric magnetograph observations on September 11, 1980 are presented. A total of 31 bipolar ephemeral regions were found in the photosphere from birth in 9.3 hours of combined magnetograph observations from three observatories. Two of the three ephemeral regions present in the field of view of the Ultraviolet Spectrometer-Polarimeter were observed in the C IV 1548 line. The unobserved ephemeral region was determined to be the shortest-lived (2.5 hr) and lowest in magnetic flux density (13G) of the three regions. The Flat Crystal Spectrometer observed only low level signals in the O VIII 18.969 A line, which were not statistically significant to be positively identified with any of the 16 ephemeral regions detected in the photosphere. In addition, the data indicate that at any given time there lacked a one-to-one correspondence between observable bright points and photospheric ephemeral regions, while more ephemeral regions were observed than their counterparts in the transition region and the corona.

  5. Silicon oxynitride films deposited by reactive high power impulse magnetron sputtering using nitrous oxide as a single-source precursor

    Energy Technology Data Exchange (ETDEWEB)

    Hänninen, Tuomas, E-mail: tuoha@ifm.liu.se; Schmidt, Susann; Jensen, Jens; Hultman, Lars; Högberg, Hans [Thin Film Physics Division, Department of Physics, Chemistry, and Biology (IFM), Linköping University, Linköping SE-581 83 (Sweden)

    2015-09-15

    Silicon oxynitride thin films were synthesized by reactive high power impulse magnetron sputtering of silicon in argon/nitrous oxide plasmas. Nitrous oxide was employed as a single-source precursor supplying oxygen and nitrogen for the film growth. The films were characterized by elastic recoil detection analysis, x-ray photoelectron spectroscopy, x-ray diffraction, x-ray reflectivity, scanning electron microscopy, and spectroscopic ellipsometry. Results show that the films are silicon rich, amorphous, and exhibit a random chemical bonding structure. The optical properties with the refractive index and the extinction coefficient correlate with the film elemental composition, showing decreasing values with increasing film oxygen and nitrogen content. The total percentage of oxygen and nitrogen in the films is controlled by adjusting the gas flow ratio in the deposition processes. Furthermore, it is shown that the film oxygen-to-nitrogen ratio can be tailored by the high power impulse magnetron sputtering-specific parameters pulse frequency and energy per pulse.

  6. Development of Langmuir probe diagnostic system for 13.56 MHz plasma sources

    International Nuclear Information System (INIS)

    Ranjini, K.; Nabhiraj, P.Y.; Mallik, C.; Bhandari, R.K.

    2006-01-01

    A work on development of high brightness ion source has been started recently. Plasma parameters are strongly linked to the brightness of the ion beams produced from the ion sources. A self compensated Langmuir probe and related automation system for the measurement of plasma parameters is developed. This paper describes design of the probe, software, hardware and the results. (author)

  7. Self-sputtering runaway in high power impulse magnetron sputtering: The role of secondary electrons and multiply charged metal ions

    International Nuclear Information System (INIS)

    Anders, Andre

    2008-01-01

    Self-sputtering runaway in high power impulse magnetron sputtering is closely related to the appearance of multiply charged ions. This conclusion is based on the properties of potential emission of secondary electrons and energy balance considerations. The effect is especially strong for materials whose sputtering yield is marginally greater than unity. The absolute deposition rate increases ∼Q 1/2 , whereas the rate normalized to the average power decreases ∼Q -1/2 , with Q being the mean ion charge state number

  8. Investigation and optimization of the magnetic field configuration in high-power impulse magnetron sputtering

    International Nuclear Information System (INIS)

    Yu, He; Meng, Liang; Szott, Matthew M; Meister, Jack T; Cho, Tae S; Ruzic, David N

    2013-01-01

    An effort to optimize the magnetic field configuration specifically for high-power impulse magnetron sputtering (HiPIMS) was made. Magnetic field configurations with different field strengths, race track widths and race track patterns were designed using COMSOL. Their influence on HiPIMS plasma properties was investigated using a 36 cm diameter copper target. The I–V discharge characteristics were measured. The temporal evolution of electron temperature (T e ) and density (n e ) was studied employing a triple Langmuir probe, which was also scanned in the whole discharge region to characterize the plasma distribution and transport. Based on the studies, a closed path for electrons to drift along was still essential in HiPIMS in order to efficiently confine electrons and achieve a high pulse current. Very dense plasmas (10 19 –10 20 m −3 ) were generated in front of the race tracks during the pulse, and expanded downstream afterwards. As the magnetic field strength increased from 200 to 800 G, the expansion became faster and less isotropic, i.e. more directional toward the substrate. The electric potential distribution accounted for these effects. Varied race track widths and patterns altered the plasma distribution from the target to the substrate. A spiral-shaped magnetic field design was able to produce superior plasma uniformity on the substrate in addition to improved target utilization. (paper)

  9. Brightness and transparency in the early visual cortex.

    Science.gov (United States)

    Salmela, Viljami R; Vanni, Simo

    2013-06-24

    Several psychophysical studies have shown that transparency can have drastic effects on brightness and lightness. However, the neural processes generating these effects have remained unresolved. Several lines of evidence suggest that the early visual cortex is important for brightness perception. While single cell recordings suggest that surface brightness is represented in the primary visual cortex, the results of functional magnetic resonance imaging (fMRI) studies have been discrepant. In addition, the location of the neural representation of transparency is not yet known. We investigated whether the fMRI responses in areas V1, V2, and V3 correlate with brightness and transparency. To dissociate the blood oxygen level-dependent (BOLD) response to brightness from the response to local border contrast and mean luminance, we used variants of White's brightness illusion, both opaque and transparent, in which luminance increments and decrements cancel each other out. The stimuli consisted of a target surface and a surround. The surround luminance was always sinusoidally modulated at 0.5 Hz to induce brightness modulation to the target. The target luminance was constant or modulated in counterphase to null brightness modulation. The mean signal changes were calculated from the voxels in V1, V2, and V3 corresponding to the retinotopic location of the target surface. The BOLD responses were significantly stronger for modulating brightness than for stimuli with constant brightness. In addition, the responses were stronger for transparent than for opaque stimuli, but there was more individual variation. No interaction between brightness and transparency was found. The results show that the early visual areas V1-V3 are sensitive to surface brightness and transparency and suggest that brightness and transparency are represented separately.

  10. On the microstructure and interfacial properties of sputtered nickel ...

    Indian Academy of Sciences (India)

    Administrator

    On the microstructure and interfacial properties of sputtered nickel ... (FE-SEM) and atomic force microscope (AFM) revealed columnar morphology with voided boundaries for ..... compound phase formation by performing the deposition.

  11. Sputter-Resistant Materials for Electric Propulsion, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — This SBIR Phase 2 project shall develop sputter-resistant materials for use in electric propulsion test facilities and for plume shields on spacecraft using electric...

  12. Preliminary results on adhesion improvement using Ion Beam Sputtering Deposition

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Yonggi; Kim, Bomsok; Lee, Jaesang [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2013-05-15

    Sputtering is an established technique for depositing films with smooth surfaces and interfaces and good thick control. Ejection of articles from a condensed matter due to impingement of high energy particles, termed as sputtering was observed as early as in 1852, however, it is only recently that the complex process of sputtering system. Coating adhesion and environmental stability of the ion beam sputtering deposition coatings performed very well. High-energy high-current ion beam thin film synthesis of adhesion problems can be solved by using. Enhancement of adhesion in thin film synthesis, using high energy and high current ion beam, of mobile phones, car parts and other possible applications in the related industry Alternative technology of wet chrome plating, considering environment and unit cost, for car parts and esthetic improvement on surface of domestic appliances.

  13. Preliminary results on adhesion improvement using Ion Beam Sputtering Deposition

    International Nuclear Information System (INIS)

    Kim, Yonggi; Kim, Bomsok; Lee, Jaesang

    2013-01-01

    Sputtering is an established technique for depositing films with smooth surfaces and interfaces and good thick control. Ejection of articles from a condensed matter due to impingement of high energy particles, termed as sputtering was observed as early as in 1852, however, it is only recently that the complex process of sputtering system. Coating adhesion and environmental stability of the ion beam sputtering deposition coatings performed very well. High-energy high-current ion beam thin film synthesis of adhesion problems can be solved by using. Enhancement of adhesion in thin film synthesis, using high energy and high current ion beam, of mobile phones, car parts and other possible applications in the related industry Alternative technology of wet chrome plating, considering environment and unit cost, for car parts and esthetic improvement on surface of domestic appliances

  14. Antibacterial properties of palladium nanostructures sputtered on polyethylene naphthalate

    Czech Academy of Sciences Publication Activity Database

    Polívková, M.; Válová, M.; Siegel, J.; Rimpelová, S.; Hubáček, Tomáš; Lyutakov, O.; Švorčík, V.

    2015-01-01

    Roč. 5, č. 90 (2015), s. 73767-73774 ISSN 2046-2069 Institutional support: RVO:60077344 Keywords : polymer * palladium sputtering * annealing * nanostructure * antibacterial effect Subject RIV: JJ - Other Materials Impact factor: 3.289, year: 2015

  15. Nanopatterning of swinging substrates by ion-beam sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Yoon, Sun Mi; Kim, J.-S., E-mail: jskim@sm.ac.kr [Department of Physics, Sookmyung Women' s University, Seoul 140-742 (Korea, Republic of)

    2016-05-28

    Graphite substrates are azimuthally swung during ion-beam sputtering (IBS) at a polar angle θ = 78° from the surface normal. The swinging of the substrate not only causes quasi-two-dimensional mass transport but also makes various sputter effects from the different incident angles to work together. Through variation of the swing angle, both the transport and sputtering effects synergistically produce a series of salient patterns, such as asymmetric wall-like structures, which can grow to several tens of nanometers and exhibit a re-entrant orientational change with the increased swing angle. Thus, the present work demonstrates that dynamic variables such as the swing angle, which have been little utilized, offer an additional parameter space that can be exploited to diversify the sputtered patterns, thereby expanding the applicability of an IBS as well as the comprehension of the IBS nano patterning mechanism.

  16. Development of ion beam sputtering techniques for actinide target preparation

    International Nuclear Information System (INIS)

    Aaron, W.S.; Zevenbergen, L.A.; Adair, H.L.

    1985-01-01

    Ion beam sputtering is a routine method for the preparation of thin films used as targets because it allows the use of minimum quantity of starting material, and losses are much lower than most other vacuum deposition techniques. Work is underway in the Isotope Research Materials Laboratory (IRML) at ORNL to develop the techniques that will make the preparation of actinide targets up to 100 μg/cm 2 by ion beam sputtering a routinely available service from IRML. The preparation of the actinide material in a form suitable for sputtering is a key to this technique, as is designing a sputtering system that allows the flexibility required for custom-ordered target production. At present, development work is being conducted on low-activity in a bench-top system. The system will then be installed in a hood or glove box approved for radioactive materials handling where processing of radium, actinium, and plutonium isotopes among others will be performed. (orig.)

  17. Sputtering of Au induced by single Xe ion impacts

    International Nuclear Information System (INIS)

    Birtcher, R. C.; Donnelly, S. E.

    1999-01-01

    Sputtering of Au thin films has been determined for Xe ions with energies between 50 and 600 keV. In-situ transmission electron microscopy was used to observe sputtered Au during deposition on a carbon foil near the specimen. Total reflection and transmission sputtering yields for a 62 nm thick Au thin film were determined by ex-situ measurement of the total amount of Au on the carbon foils. In situ observations show that individual Xe ions eject Au nanoparticles as large as 7 nm in diameter with an average diameter of approximately 3 nm. Particle emission correlates with crater formation due to single ion impacts. Nanoparticle emission contributes significantly to the total sputtering yield for Xe ions in this energy range in either reflection or transmission geometry

  18. Electronic sputtering of biomolecules and its application in mass spectrometry

    International Nuclear Information System (INIS)

    Haakansson, P.; Sundqvist, B.U.R.

    1989-01-01

    In 1974 Macfarlane discovered that fast heavy ions from a 252-Cf source can desorb and ionize molecules from a solid surface. The mass of the molecules was determined by time-of-flight technique. It has been shown that the desorption mechanism is associated with the electron part of the stopping power of the primary ion and the name 'electron sputtering' has been adopted for the phenomenon to distinguish it from the well-known sputtering process with ions of KeV energy. A review of electronic sputtering of biomolecules will be given as well as recent measurements on Langmuir-Blodgett films. One important application of electronic sputtering is in the field of mass spectrometry. With this technique large and nonvolatile molecules can be studied. Particularly adsorption of biomolecules to a nitrocellulose backing has proven to be very useful. Examples will be given of mass spectra from peptides with a molecular weight above 20,000 u. (author)

  19. CO2 gas sensitivity of sputtered zinc oxide thin films

    Indian Academy of Sciences (India)

    TECS

    Gas sensitivity; ZnO; sputtering; XRD patterns; structure; thin films. 1. Introduction. Because zinc ... voltage and absorption properties of those fabricated films have been ... tations are useful in many physical applications. The in- plane (Hegde ...

  20. Sputtering mechanisms of polycrystalline platinum by low energy ions

    International Nuclear Information System (INIS)

    Chernysh, V.S.; Eckstein, W.; Haidarov, A.A.; Kulikauskas, V.S.; Mashkova, E.S.; Molchanov, V.A.

    1999-01-01

    The results of an experimental study and a computer simulation with the TRIM.SP code of the angular distributions of atoms sputtered from polycrystalline platinum under 1.5-9 keV He + bombardment at the normal ion incidence are presented. It has been found that angular distributions of sputtered atoms are overcosine and that their shape is practically independent of the bombarding ion species and ion energy. Good agreement between experimental results and computer simulation data was found. Computer simulations of the partial angular distributions of Pt atoms ejected due to various sputtering mechanisms for He and Ar bombardments were performed. The role of different mechanisms in the formation of angular distributions of sputtered atoms has been analyzed

  1. Sputtering of two-phase AgxCuγ alloys

    International Nuclear Information System (INIS)

    Bibic, N.; Milosavljevic, M.; Perusko, D.; Wilson, I.H.

    1992-01-01

    Elemental sputtering yields from two phase AgCu alloys were measured for 20, 40 and 50 at % Ag. Argon ion bombardment energies were in the range 35-55 keV and the ion dose was 1 x 10 19 ions cm -2 . The sputtering yield for silver was found to be considerably below what was expected by simple selective sputtering of a two component alloy. Analysis by electron probe X-ray microanalysis and scanning electron microscopy of the eroded surface indicated that surface diffusion of copper from copper rich grains and geometrical constraints in the dense cone forest on Cu/Ag eutectic regions combine to reduce the sputtering yield for silver. (author)

  2. Nanopatterning of swinging substrates by ion-beam sputtering

    International Nuclear Information System (INIS)

    Yoon, Sun Mi; Kim, J.-S.

    2016-01-01

    Graphite substrates are azimuthally swung during ion-beam sputtering (IBS) at a polar angle θ = 78° from the surface normal. The swinging of the substrate not only causes quasi-two-dimensional mass transport but also makes various sputter effects from the different incident angles to work together. Through variation of the swing angle, both the transport and sputtering effects synergistically produce a series of salient patterns, such as asymmetric wall-like structures, which can grow to several tens of nanometers and exhibit a re-entrant orientational change with the increased swing angle. Thus, the present work demonstrates that dynamic variables such as the swing angle, which have been little utilized, offer an additional parameter space that can be exploited to diversify the sputtered patterns, thereby expanding the applicability of an IBS as well as the comprehension of the IBS nano patterning mechanism.

  3. High Brightness Neutron Source for Radiography. Final report

    International Nuclear Information System (INIS)

    Cremer, J.T.; Piestrup, Melvin A.; Gary, Charles K.; Harris, Jack L.; Williams, David J.; Jones, Glenn E.; Vainionpaa, J.H.; Fuller, Michael J.; Rothbart, George H.; Kwan, J.W.; Ludewigt, B.A.; Gough, R.A.; Reijonen, Jani; Leung, Ka-Ngo

    2008-01-01

    This research and development program was designed to improve nondestructive evaluation of large mechanical objects by providing both fast and thermal neutron sources for radiography. Neutron radiography permits inspection inside objects that x-rays cannot penetrate and permits imaging of corrosion and cracks in low-density materials. Discovering of fatigue cracks and corrosion in piping without the necessity of insulation removal is possible. Neutron radiography sources can provide for the nondestructive testing interests of commercial and military aircraft, public utilities and petrochemical organizations. Three neutron prototype neutron generators were designed and fabricated based on original research done at the Lawrence Berkeley National Laboratory (LBNL). The research and development of these generators was successfully continued by LBNL and Adelphi Technology Inc. under this STTR. The original design goals of high neutron yield and generator robustness have been achieved, using new technology developed under this grant. In one prototype generator, the fast neutron yield and brightness was roughly 10 times larger than previously marketed neutron generators using the same deuterium-deuterium reaction. In another generator, we integrate a moderator with a fast neutron source, resulting in a high brightness thermal neutron generator. The moderator acts as both conventional moderator and mechanical and electrical support structure for the generator and effectively mimics a nuclear reactor. In addition to the new prototype generators, an entirely new plasma ion source for neutron production was developed. First developed by LBNL, this source uses a spiral antenna to more efficiently couple the RF radiation into the plasma, reducing the required gas pressure so that the generator head can be completely sealed, permitting the possible use of tritium gas. This also permits the generator to use the deuterium-tritium reaction to produce 14-MeV neutrons with increases

  4. Magnetospheric ion sputtering and water ice grain size at Europa

    Science.gov (United States)

    Cassidy, T. A.; Paranicas, C. P.; Shirley, J. H.; Dalton, J. B., III; Teolis, B. D.; Johnson, R. E.; Kamp, L.; Hendrix, A. R.

    2013-03-01

    We present the first calculation of Europa's sputtering (ion erosion) rate as a function of position on Europa's surface. We find a global sputtering rate of 2×1027 H2O s-1, some of which leaves the surface in the form of O2 and H2. The calculated O2 production rate is 1×1026 O2 s-1, H2 production is twice that value. The total sputtering rate (including all species) peaks at the trailing hemisphere apex and decreases to about 1/3rd of the peak value at the leading hemisphere apex. O2 and H2 sputtering, by contrast, is confined almost entirely to the trailing hemisphere. Most sputtering is done by energetic sulfur ions (100s of keV to MeV), but most of the O2 and H2 production is done by cold oxygen ions (temperature ∼ 100 eV, total energy ∼ 500 eV). As a part of the sputtering rate calculation we compared experimental sputtering yields with analytic estimates. We found that the experimental data are well approximated by the expressions of Famá et al. for ions with energies less than 100 keV (Famá, M., Shi, J., Baragiola, R.A., 2008. Sputtering of ice by low-energy ions. Surf. Sci. 602, 156-161), while the expressions from Johnson et al. fit the data best at higher energies (Johnson, R.E., Burger, M.H., Cassidy, T.A., Leblanc, F., Marconi, M., Smyth, W.H., 2009. Composition and Detection of Europa's Sputter-Induced Atmosphere, in: Pappalardo, R.T., McKinnon, W.B., Khurana, K.K. (Eds.), Europa. University of Arizona Press, Tucson.). We compare the calculated sputtering rate with estimates of water ice regolith grain size as estimated from Galileo Near-Infrared Mapping Spectrometer (NIMS) data, and find that they are strongly correlated as previously suggested by Clark et al. (Clark, R.N., Fanale, F.P., Zent, A.P., 1983. Frost grain size metamorphism: Implications for remote sensing of planetary surfaces. Icarus 56, 233-245.). The mechanism responsible for the sputtering rate/grain size link is uncertain. We also report a surface composition estimate using

  5. Secondary ion formation during electronic and nuclear sputtering of germanium

    Science.gov (United States)

    Breuer, L.; Ernst, P.; Herder, M.; Meinerzhagen, F.; Bender, M.; Severin, D.; Wucher, A.

    2018-06-01

    Using a time-of-flight mass spectrometer attached to the UNILAC beamline located at the GSI Helmholtz Centre for Heavy Ion Research, we investigate the formation of secondary ions sputtered from a germanium surface under irradiation by swift heavy ions (SHI) such as 5 MeV/u Au by simultaneously recording the mass spectra of the ejected secondary ions and their neutral counterparts. In these experiments, the sputtered neutral material is post-ionized via single photon absorption from a pulsed, intensive VUV laser. After post-ionization, the instrument cannot distinguish between secondary ions and post-ionized neutrals, so that both signals can be directly compared in order to investigate the ionization probability of different sputtered species. In order to facilitate an in-situ comparison with typical nuclear sputtering conditions, the system is also equipped with a conventional rare gas ion source delivering a 5 keV argon ion beam. For a dynamically sputter cleaned surface, it is found that the ionization probability of Ge atoms and Gen clusters ejected under electronic sputtering conditions is by more than an order of magnitude higher than that measured for keV sputtered particles. In addition, the mass spectra obtained under SHI irradiation show prominent signals of GenOm clusters, which are predominantly detected as positive or negative secondary ions. From the m-distribution for a given Ge nuclearity n, one can deduce that the sputtered material must originate from a germanium oxide matrix with approximate GeO stoichiometry, probably due to residual native oxide patches even at the dynamically cleaned surface. The results clearly demonstrate a fundamental difference between the ejection and ionization mechanisms in both cases, which is interpreted in terms of corresponding model calculations.

  6. Simple model of surface roughness for binary collision sputtering simulations

    Energy Technology Data Exchange (ETDEWEB)

    Lindsey, Sloan J. [Institute of Solid-State Electronics, TU Wien, Floragasse 7, A-1040 Wien (Austria); Hobler, Gerhard, E-mail: gerhard.hobler@tuwien.ac.at [Institute of Solid-State Electronics, TU Wien, Floragasse 7, A-1040 Wien (Austria); Maciążek, Dawid; Postawa, Zbigniew [Institute of Physics, Jagiellonian University, ul. Lojasiewicza 11, 30348 Kraków (Poland)

    2017-02-15

    Highlights: • A simple model of surface roughness is proposed. • Its key feature is a linearly varying target density at the surface. • The model can be used in 1D/2D/3D Monte Carlo binary collision simulations. • The model fits well experimental glancing incidence sputtering yield data. - Abstract: It has been shown that surface roughness can strongly influence the sputtering yield – especially at glancing incidence angles where the inclusion of surface roughness leads to an increase in sputtering yields. In this work, we propose a simple one-parameter model (the “density gradient model”) which imitates surface roughness effects. In the model, the target’s atomic density is assumed to vary linearly between the actual material density and zero. The layer width is the sole model parameter. The model has been implemented in the binary collision simulator IMSIL and has been evaluated against various geometric surface models for 5 keV Ga ions impinging an amorphous Si target. To aid the construction of a realistic rough surface topography, we have performed MD simulations of sequential 5 keV Ga impacts on an initially crystalline Si target. We show that our new model effectively reproduces the sputtering yield, with only minor variations in the energy and angular distributions of sputtered particles. The success of the density gradient model is attributed to a reduction of the reflection coefficient – leading to increased sputtering yields, similar in effect to surface roughness.

  7. Simple model of surface roughness for binary collision sputtering simulations

    International Nuclear Information System (INIS)

    Lindsey, Sloan J.; Hobler, Gerhard; Maciążek, Dawid; Postawa, Zbigniew

    2017-01-01

    Highlights: • A simple model of surface roughness is proposed. • Its key feature is a linearly varying target density at the surface. • The model can be used in 1D/2D/3D Monte Carlo binary collision simulations. • The model fits well experimental glancing incidence sputtering yield data. - Abstract: It has been shown that surface roughness can strongly influence the sputtering yield – especially at glancing incidence angles where the inclusion of surface roughness leads to an increase in sputtering yields. In this work, we propose a simple one-parameter model (the “density gradient model”) which imitates surface roughness effects. In the model, the target’s atomic density is assumed to vary linearly between the actual material density and zero. The layer width is the sole model parameter. The model has been implemented in the binary collision simulator IMSIL and has been evaluated against various geometric surface models for 5 keV Ga ions impinging an amorphous Si target. To aid the construction of a realistic rough surface topography, we have performed MD simulations of sequential 5 keV Ga impacts on an initially crystalline Si target. We show that our new model effectively reproduces the sputtering yield, with only minor variations in the energy and angular distributions of sputtered particles. The success of the density gradient model is attributed to a reduction of the reflection coefficient – leading to increased sputtering yields, similar in effect to surface roughness.

  8. Evaluation of residual stress in sputtered tantalum thin-film

    Energy Technology Data Exchange (ETDEWEB)

    Al-masha’al, Asa’ad, E-mail: asaad.al@ed.ac.uk; Bunting, Andrew; Cheung, Rebecca

    2016-05-15

    Highlights: • Tantalum thin-films have been deposited by DC magnetron sputtering system. • Thin-film stress is observed to be strongly influenced by sputtering pressure. • Transition towards the compressive stress is ascribed to the annealing at 300 °C. • Expose thin-film to air ambient or ion bombardment lead to a noticeable change in the residual stress. - Abstract: The influence of deposition conditions on the residual stress of sputtered tantalum thin-film has been evaluated in the present study. Films have been deposited by DC magnetron sputtering and curvature measurement method has been employed to calculate the residual stress of the films. Transitions of tantalum film stress from compressive to tensile state have been observed as the sputtering pressure increases. Also, the effect of annealing process at temperature range of 90–300 °C in oxygen ambient on the residual stress of the films has been studied. The results demonstrate that the residual stress of the films that have been deposited at lower sputtering pressure has become more compressive when annealed at 300 °C. Furthermore, the impact of exposure to atmospheric ambient on the tantalum film stress has been investigated by monitoring the variation of the residual stress of both annealed and unannealed films over time. The as-deposited films have been exposed to pure Argon energy bombardment and as result, a high compressive stress has been developed in the films.

  9. Laboratory simulation of erosion by space plasma

    International Nuclear Information System (INIS)

    Kristoferson, L.; Fredga, K.

    1976-04-01

    A laboratory experiment has been made where a plasma stream collides with targets made of different materials of cosmic interest. The experiment can be viewed as a process simulation of the solar wind particle interaction with solid surfaces in space, e.g. cometary dust. Special interest is given to sputtering of OH and Na. It is shown that the erosion of solid particles in interplanetary space at large heliocentric distances is most likely dominated by sputtering and by sublimation near the sun. The heliocentric distance of the limit between the two regions is determined mainly by the material properties of the eroded surface, e.g. heat of sublimation and sputtering yield, a typical distance being 0,5 a.u. It is concluded that the observations of Na in comets at large solar distances, in some cases also near the sun, is most likely to be explained by solar wind sputtering. OH emission in space could be of importance also from 'dry', water-free, matter by means of molecule sputtering. The observed OH production rates in comets are however too large to be explained in this way and are certainly the results of sublimation and dissociation of H 2 O from an icy nucleus. (Auth.)

  10. A very bright SAR arc: implications for extreme magnetosphere-ionosphere coupling

    Directory of Open Access Journals (Sweden)

    J. Baumgardner

    2007-01-01

    Full Text Available In contrast to the polar aurora visible during geomagnetic storms, stable auroral red (SAR arcs offer a sub-visual manifestation of direct magnetosphere-ionosphere (M-I coupling at midlatitudes. The SAR arc emission at 6300 Å is driven by field-aligned magnetospheric energy transport from ring current/plasmapause locations into the ionosphere-thermosphere system. The first SAR arc was observed at the dawn of the space age (1956, and the typical brightness levels and occurrence patterns obtained from subsequent decades of observations appear to be consistent with the downward heat conduction theory, i.e., heated ambient F-layer electrons excite oxygen atoms to produce a spectrally pure emission. On very rare occasions, a SAR arc has been reported to be at brightness levels visible to the naked eye. Here we report on the first case of a very bright SAR arc (~13 kilo-Rayleighs observed by four diagnostic systems that sampled various aspects of the sub-auroral domain near Millstone Hill, MA, on the night of 29 October 1991: an imaging spectrograph, an all-sky camera, an incoherent scatter radar (ISR, and a DMSP satellite. Simulations of emission using the ISR and DMSP data with the MSIS neutral atmosphere succeed in reproducing the brightness levels observed. This provides a robust confirmation of M-I coupling theory in its most extreme aeronomic form within the innermost magnetosphere (L~2 during a rare superstorm event. The unusually high brightness value appears to be due to the rare occurrence of the heating of dense ionospheric plasma just equatorward of the trough/plasmapause location, in contrast to the more typical heating of the less dense F-layer within the trough.

  11. A very bright SAR arc: implications for extreme magnetosphere-ionosphere coupling

    Directory of Open Access Journals (Sweden)

    J. Baumgardner

    2008-01-01

    Full Text Available In contrast to the polar aurora visible during geomagnetic storms, stable auroral red (SAR arcs offer a sub-visual manifestation of direct magnetosphere-ionosphere (M-I coupling at midlatitudes. The SAR arc emission at 6300 Å is driven by field-aligned magnetospheric energy transport from ring current/plasmapause locations into the ionosphere-thermosphere system. The first SAR arc was observed at the dawn of the space age (1956, and the typical brightness levels and occurrence patterns obtained from subsequent decades of observations appear to be consistent with the downward heat conduction theory, i.e., heated ambient F-layer electrons excite oxygen atoms to produce a spectrally pure emission. On very rare occasions, a SAR arc has been reported to be at brightness levels visible to the naked eye. Here we report on the first case of a very bright SAR arc (~13 kilo-Rayleighs observed by four diagnostic systems that sampled various aspects of the sub-auroral domain near Millstone Hill, MA, on the night of 29 October 1991: an imaging spectrograph, an all-sky camera, an incoherent scatter radar (ISR, and a DMSP satellite. Simulations of emission using the ISR and DMSP data with the MSIS neutral atmosphere succeed in reproducing the brightness levels observed. This provides a robust confirmation of M-I coupling theory in its most extreme aeronomic form within the innermost magnetosphere (L~2 during a rare superstorm event. The unusually high brightness value appears to be due to the rare occurrence of the heating of dense ionospheric plasma just equatorward of the trough/plasmapause location, in contrast to the more typical heating of the less dense F-layer within the trough.

  12. Very-High-Brightness Picosecond Electron Source

    International Nuclear Information System (INIS)

    Bluem, H.

    2003-01-01

    Bright, RF photocathode electron guns are the source of choice for most high-performance research accelerator applications. Some of these applications are pushing the performance boundaries of the present state-of-the-art guns. Advanced Energy Systems is developing a novel photocathode RF gun that shows excellent promise for extending gun performance. Initial gun simulations with only a short booster accelerator easily break the benchmark emittance of one micron for 1 nC of bunch charge. The pulse length in these simulations is less than 2 ps. It is expected that with more detailed optimization studies, the performance can be further improved. The performance details of the gun will be presented. In addition, we will discuss the present design concept along with the status of the project

  13. New redshifts of bright galaxies. III

    International Nuclear Information System (INIS)

    de Vaucouleurs, G.; de Vaucouleurs, A.; Nieto, J.

    1979-01-01

    Redshifts of 196 bright galaxies, and 2 QSO's are derived from 246 spectrograms obtained from 1972 to 1977 with the Galaxy meter's two-state image tube grism spectrograph attached at the Cassegrain focus of the McDonald Observatory Struve reflector. The reciprocal dispersion in 335 A/mm at Hα and the wavelength range lambdalambda 4500--8000 A. The galaxy redshifts are in the range -28 -1 , but few exceed 5,000 km s -1 . The internal mean errors of the weighted mean velocities range from 22 to 140 km s -1 . Comparisons with other systems of redshifts, particularly the RC2, 21-cm and Sandage systems, indicate a mean systematic error of -35 +- 16 km s -1 , but it is probably variable with V. The external mean error is sigma*=90 km s -1 for velocities V -1 having a mean weight =4.0

  14. Dark Skies, Bright Kids Year 8

    Science.gov (United States)

    Bittle, Lauren E.; Wenger, Trey; Johnson, Kelsey E.; Angell, Dylan; Burkhardt, Andrew; Davis, Blair; Firebaugh, Ariel; Hancock, Danielle; Richardson, Whitney; Rochford Hayes, Christian; Linden, Sean; Liss, Sandra; Matthews, Allison; McNair, Shunlante; Prager, Brian; Pryal, Matthew; Troup, Nicholas William

    2017-01-01

    We present activities from the eighth year of Dark Skies Bright Kids (DSBK), an entirely volunteer-run outreach organization based out of the Department of Astronomy at the University of Virginia. Our core mission is to enhance elementary science education and literacy in Central Virginia through fun, hands-on activities that introduce basic Astronomy concepts. Over the past seven years, our primary focus has been hosting an 8-10 week after-school astronomy club at underserved elementary and middle schools, and over the past several years, we have partnered with local businesses to host our Annual Central Virginia Star Party, a free event open to the community featuring star-gazing and planetarium shows. This past summer we expanded our reach through a new initiative to bring week-long summer day camps to south and southwest Virginia, home to some of the most underserved communities in the commonwealth.

  15. Dark Skies, Bright Kids Year 7

    Science.gov (United States)

    Bittle, Lauren E.; Johnson, Kelsey E.; Borish, H. Jacob; Burkhardt, Andrew; Firebaugh, Ariel; Hancock, Danielle; Rochford Hayes, Christian; Linden, Sean; Liss, Sandra; Matthews, Allison; Prager, Brian; Pryal, Matthew; Sokal, Kimberly R.; Troup, Nicholas William; Wenger, Trey

    2016-01-01

    We present updates from our seventh year of operation including new club content, continued assessments, and our fifth annual Star Party. Dark Skies, Bright Kids (DSBK) is an entirely volunteer-run outreach organization based out of the Department of Astronomy at the University of Virginia. Our core mission is to enhance elementary science education and literacy in Central Virginia through fun, hands-on activities that introduce basic Astronomy concepts. Our primary focus is hosting an 8-10 week after-school astronomy club at underserved elementary and middle schools. Each week, DSBK volunteers take the role of coaches to introduce astronomy-related concepts ranging from the Solar System to galaxies to astrobiology, and to lead students in interactive learning activities. Another hallmark of DSBK is hosting our Annual Central Virginia Star Party, a free event open to the community featuring star-gazing and planetarium shows.

  16. Considerations for high-brightness electron sources

    International Nuclear Information System (INIS)

    Jameson, R.A.

    1990-01-01

    Particle accelerators are now used in many areas of physics research and in industrial and medical applications. New uses are being studied to address major societal needs in energy production, materials research, generation of intense beams of radiation at optical and suboptical wavelengths, treatment of various kinds of waste, and so on. Many of these modern applications require a high intensity beam at the desired energy, along with a very good beam quality in terms of the beam confinement, aiming, or focusing. Considerations for ion and electron accelerators are often different, but there are also many commonalties, and in fact, techniques derived for one should perhaps more often be considered for the other as well. We discuss some aspects of high-brightness electron sources here from that point of view. 6 refs

  17. Life-threatening motor vehicle crashes in bright sunlight

    OpenAIRE

    Redelmeier, Donald A.; Raza, Sheharyar

    2017-01-01

    Abstract Bright sunlight may create visual illusions that lead to driver error, including fallible distance judgment from aerial perspective. We tested whether the risk of a life-threatening motor vehicle crash was increased when driving in bright sunlight. This longitudinal, case-only, paired-comparison analysis evaluated patients hospitalized because of a motor vehicle crash between January 1, 1995 and December 31, 2014. The relative risk of a crash associated with bright sunlight was estim...

  18. Estimates of Sputter Yields of Solar-Wind Heavy Ions of Lunar Regolith Materials

    Science.gov (United States)

    Barghouty, Abdulmasser F.; Adams, James H., Jr.

    2008-01-01

    At energies of approximately 1 keV/amu, solar-wind protons and heavy ions interact with the lunar surface materials via a number of microscopic interactions that include sputtering. Solar-wind induced sputtering is a main mechanism by which the composition of the topmost layers of the lunar surface can change, dynamically and preferentially. This work concentrates on sputtering induced by solar-wind heavy ions. Sputtering associated with slow (speeds the electrons speed in its first Bohr orbit) and highly charged ions are known to include both kinetic and potential sputtering. Potential sputtering enjoys some unique characteristics that makes it of special interest to lunar science and exploration. Unlike the yield from kinetic sputtering where simulation and approximation schemes exist, the yield from potential sputtering is not as easy to estimate. This work will present a preliminary numerical scheme designed to estimate potential sputtering yields from reactions relevant to this aspect of solar-wind lunar-surface coupling.

  19. Study of Three-Dimensional Image Brightness Loss in Stereoscopy

    Directory of Open Access Journals (Sweden)

    Hsing-Cheng Yu

    2015-10-01

    Full Text Available When viewing three-dimensional (3D images, whether in cinemas or on stereoscopic televisions, viewers experience the same problem of image brightness loss. This study aims to investigate image brightness loss in 3D displays, with the primary aim being to quantify the image brightness degradation in the 3D mode. A further aim is to determine the image brightness relationship to the corresponding two-dimensional (2D images in order to adjust the 3D-image brightness values. In addition, the photographic principle is used in this study to measure metering values by capturing 2D and 3D images on television screens. By analyzing these images with statistical product and service solutions (SPSS software, the image brightness values can be estimated using the statistical regression model, which can also indicate the impact of various environmental factors or hardware on the image brightness. In analysis of the experimental results, comparison of the image brightness between 2D and 3D images indicates 60.8% degradation in the 3D image brightness amplitude. The experimental values, from 52.4% to 69.2%, are within the 95% confidence interval

  20. The night sky brightness at McDonald Observatory

    Science.gov (United States)

    Kalinowski, J. K.; Roosen, R. G.; Brandt, J. C.

    1975-01-01

    Baseline observations of the night sky brightness in B and V are presented for McDonald Observatory. In agreement with earlier work by Elvey and Rudnick (1937) and Elvey (1943), significant night-to-night and same-night variations in sky brightness are found. Possible causes for these variations are discussed. The largest variation in sky brightness found during a single night is approximately a factor of two, a value which corresponds to a factor-of-four variation in airglow brightness. The data are used to comment on the accuracy of previously published surface photometry of M 81.

  1. Plasma production for electron acceleration by resonant plasma wave

    International Nuclear Information System (INIS)

    Anania, M.P.; Biagioni, A.; Chiadroni, E.; Cianchi, A.; Croia, M.; Curcio, A.; Di Giovenale, D.; Di Pirro, G.P.; Filippi, F.; Ghigo, A.; Lollo, V.; Pella, S.; Pompili, R.; Romeo, S.; Ferrario, M.

    2016-01-01

    Plasma wakefield acceleration is the most promising acceleration technique known nowadays, able to provide very high accelerating fields (10–100 GV/m), enabling acceleration of electrons to GeV energy in few centimeter. However, the quality of the electron bunches accelerated with this technique is still not comparable with that of conventional accelerators (large energy spread, low repetition rate, and large emittance); radiofrequency-based accelerators, in fact, are limited in accelerating field (10–100 MV/m) requiring therefore hundred of meters of distances to reach the GeV energies, but can provide very bright electron bunches. To combine high brightness electron bunches from conventional accelerators and high accelerating fields reachable with plasmas could be a good compromise allowing to further accelerate high brightness electron bunches coming from LINAC while preserving electron beam quality. Following the idea of plasma wave resonant excitation driven by a train of short bunches, we have started to study the requirements in terms of plasma for SPARC-LAB (Ferrario et al., 2013 [1]). In particular here we focus on hydrogen plasma discharge, and in particular on the theoretical and numerical estimates of the ionization process which are very useful to design the discharge circuit and to evaluate the current needed to be supplied to the gas in order to have full ionization. Eventually, the current supplied to the gas simulated will be compared to that measured experimentally.

  2. Plasma production for electron acceleration by resonant plasma wave

    Energy Technology Data Exchange (ETDEWEB)

    Anania, M.P., E-mail: maria.pia.anania@lnf.infn.it [INFN - LNF, via Enrico Fermi, 40, 00044 Frascati (Italy); Biagioni, A.; Chiadroni, E. [INFN - LNF, via Enrico Fermi, 40, 00044 Frascati (Italy); Cianchi, A. [University of Rome Tor Vergata - INFN, via della Ricerca Scientifica, 1, 00133 Roma (Italy); INFN, Via della Ricerca Scientifica, 1, 00133 Roma (Italy); Croia, M.; Curcio, A. [INFN - LNF, via Enrico Fermi, 40, 00044 Frascati (Italy); University of Rome La Sapienza, Piazzale Aldo Moro, 2, 00185 Roma (Italy); Di Giovenale, D.; Di Pirro, G.P. [INFN - LNF, via Enrico Fermi, 40, 00044 Frascati (Italy); Filippi, F. [University of Rome La Sapienza, Piazzale Aldo Moro, 2, 00185 Roma (Italy); Ghigo, A.; Lollo, V.; Pella, S.; Pompili, R. [INFN - LNF, via Enrico Fermi, 40, 00044 Frascati (Italy); Romeo, S. [INFN - LNF, via Enrico Fermi, 40, 00044 Frascati (Italy); University of Rome La Sapienza, Piazzale Aldo Moro, 2, 00185 Roma (Italy); Ferrario, M. [INFN - LNF, via Enrico Fermi, 40, 00044 Frascati (Italy)

    2016-09-01

    Plasma wakefield acceleration is the most promising acceleration technique known nowadays, able to provide very high accelerating fields (10–100 GV/m), enabling acceleration of electrons to GeV energy in few centimeter. However, the quality of the electron bunches accelerated with this technique is still not comparable with that of conventional accelerators (large energy spread, low repetition rate, and large emittance); radiofrequency-based accelerators, in fact, are limited in accelerating field (10–100 MV/m) requiring therefore hundred of meters of distances to reach the GeV energies, but can provide very bright electron bunches. To combine high brightness electron bunches from conventional accelerators and high accelerating fields reachable with plasmas could be a good compromise allowing to further accelerate high brightness electron bunches coming from LINAC while preserving electron beam quality. Following the idea of plasma wave resonant excitation driven by a train of short bunches, we have started to study the requirements in terms of plasma for SPARC-LAB (Ferrario et al., 2013 [1]). In particular here we focus on hydrogen plasma discharge, and in particular on the theoretical and numerical estimates of the ionization process which are very useful to design the discharge circuit and to evaluate the current needed to be supplied to the gas in order to have full ionization. Eventually, the current supplied to the gas simulated will be compared to that measured experimentally.

  3. Ion beam sputter coatings for laser technology

    Science.gov (United States)

    Ristau, Detlev; Gross, Tobias

    2005-09-01

    The initial motivation for the development of Ion Beam Sputtering (IBS) processes was the need for optical coatings with extremely low optical scatter losses for laser gyros. Especially, backscattering of the gyro-mirrors couples the directional modes in the ring resonator leading to the lock in effect which limits the sensitivity of the gyro. Accordingly, the first patent on IBS was approved for an aircraft company (Litton) in 1978. In the course of the rapid development of the IBS-concept during the last two decades, an extremely high optical quality could be achieved for laser coatings in the VIS- and NIR-spectral region. For example, high reflecting coatings with total optical losses below 1 ppm were demonstrated for specific precision measurement applications with the Nd:YAG-laser operating at 1.064 μm. Even though the high quality level of IBS-coatings had been confirmed in many applications, the process has not found its way into the production environment of most optical companies. Major restrictions are the relatively low rate of the deposition process and the poor lateral homogeneity of the coatings, which are related to the output characteristics of the currently available ion sources. In the present contribution, the basic principles of IBS will be discussed in the context of the demands of modern laser technology. Besides selected examples for special applications of IBS, aspects will be presented for approaches towards rapid manufacturing of coatings and the production of rugate filters on the basis of IBS-techniques.

  4. Structural and corrosive properties of ZrO2 thin films on zircaloy-4 by RF reactive magnetron sputtering

    International Nuclear Information System (INIS)

    Kim, Soo Ho; Lee, Kwang Hoon; Ko, Jae Hwan; Yoon, Young Soo; Baek, Jong Hyuk; Lee, Sang Jin

    2006-01-01

    Zirconium-oxide (ZrO 2 ) thin films as protective layers were grown on a Zircaloy-4 (Z-4) cladding material as a substrate by RF reactive magnetron sputtering at room temperature. To investigate the effect of plasma immersion on the structural and the corrosive properties of the as-grown ZrO 2 thin film, we immersed Z-4 in plasma during the deposition process. X-ray diffraction (XRD) measurements showed that the as-grown ZrO 2 thin films immersed in plasma had cubic, well as monoclinic and tetragonal, phases whereas those immersed in the plasma had monoclinic and tetragonal phases only. Atomic force microscopy (AFM) measurements of the surface morphology showed that the surface roughness of the as-grown ZrO 2 thin films immersed in plasma was larger than that of the films not immersed in plasma. In addition, the corrosive property of the as-grown ZrO 2 thin films immersed in the plasma was characterized using the weight gains of Z-4 after the corrosion test. Compared with the non-immersed films, the weight gains of the immersed films were larger. These results indicate that the ZrO 2 films immersed in plasma cannot protect Z-4 from corrosive phenomena.

  5. Investigation and applications of a plasma generator

    International Nuclear Information System (INIS)

    Frere, Isabelle

    1992-01-01

    This work describes the experimental study of a plasma generator: a cylindrical or parallelepipedic rectangle cathode. A permanent magnet creates an axial magnetic field of a few hundred Gauss. A cold and abnormal glow discharge plasma is obtained. The experimental research on the correlation between the discharge parameters (electrode geometry, gas pressure, discharge voltage and current, magnetic field) of the discharge is presented. Another part of the text mentions some generator applications to surface treatment: evaporation, sputtering, surface modification of polymers by exposure to plasma. (author) [fr

  6. Microstructural control of TiC/a-C nanocomposite coatings with pulsed magnetron sputtering

    International Nuclear Information System (INIS)

    Pei, Y.T.; Chen, C.Q.; Shaha, K.P.; De Hosson, J.Th.M.; Bradley, J.W.; Voronin, S.A.; Cada, M.

    2008-01-01

    In this paper, we report some striking results on the microstructural control of TiC/a-C nanocomposite coatings with pulsed direct current (DC) magnetron sputtering. The interface morphology and microstructure evolution as a function of pulse frequency and duty cycle were scrutinized using atomic force microscopy, scanning electron microscopy and high-resolution transmission electron microscopy techniques. It is shown that, with increasing pulse frequency, the nanocomposite coatings exhibit evolutions in morphology of the growing interface from rough to smooth and in the microstructure from strongly columnar to fully columnar-free. In addition, the smoothly growing interface favors the formation of a tailor-made multilayered nanocomposite structure. The fundamental mechanisms are analyzed with the assistance of plasma diagnostic experiments. Ion mass/energy spectrometry measurements reveal that, depending on the frequency and duty cycle of DC pulses, pulsing of the magnetrons can control the flux and energy distribution of Ar + ions over a very broad range for concurrent impingement on the growing interface of deposited coatings, in comparison with DC sputtering. The significantly enhanced energy flux density is thought to be responsible for the 'adatom transfer' in interface smoothening and thus the restraint of columnar growth

  7. Deposition of Al/Cu Multilayer By Double Targets Cylindrical DC Magnetron Sputtering System

    Directory of Open Access Journals (Sweden)

    P. Balashabadi

    2013-12-01

    Full Text Available A cylindrical direct current magnetron sputtering coater with two targets for deposition of multilayer thin films and cermet solar selective surfaces has been constructed. The substrate holder was able to rotate around the target for obtaining the uniform layer and separated multilayer phases. The Al/ Cu multilayer film was deposited on the glass substrate at the following conditions: Working gas = Pure argon, Working pressure = 1 Pa, Cathode current = 8 A and cathode voltage = -600 V .Microstructure of the film was investigated by X-Ray Diffraction and the scanning electron microscopy analyses. The elements profile was determined by glow discharge–optical emission spectroscopy analysis. During deposition, both targets with magnetron configuration were sputtered simultaneously by argon ions. A Plasma column on the targets surface was generated by a 290 G permanent magnet unit. Two DC power supply units with three phases input and maximum output of 12 A/1000V were used to deposit the multilayer thin films. A control phase system was used to adjust output voltage.

  8. Effect of sputtering on self-damaged recrystallized W mirror specimens

    Energy Technology Data Exchange (ETDEWEB)

    Voitsenya, V.S. [Institute of Plasma Physics, National Scientific Center “KIPT”, 61108 Kharkov (Ukraine); Balden, M. [Max-Planck-Institut für Plasmaphysik, EURATOM Association, D-85748 Garching (Germany); Belyaeva, A.I. [National Technical University, “Kharkiv Polytechnical Institute”, 61002 Kharkov (Ukraine); Alimov, V.Kh. [Hydrogen Isotope Research Center, University of Toyama, Toyama 930-8555 (Japan); Tyburska-Püschel, B., E-mail: tyburska@engr.wisc.edu [Max-Planck-Institut für Plasmaphysik, EURATOM Association, D-85748 Garching (Germany); Galuza, A.A. [Institute of Electrophysics and Radiation Technologies, NAS of Ukraine, 61002 Kharkov (Ukraine); Kasilov, A.A.; Kolenov, I.V. [Institute of Plasma Physics, National Scientific Center “KIPT”, 61108 Kharkov (Ukraine); Konovalov, V.G. [National Technical University, “Kharkiv Polytechnical Institute”, 61002 Kharkov (Ukraine); Skoryk, O.O.; Solodovchenko, S.I. [Institute of Plasma Physics, National Scientific Center “KIPT”, 61108 Kharkov (Ukraine)

    2013-03-15

    The effect of heavy sputtering and of neutron irradiation simulated by displacement damaging with of 20 MeV W{sup 6+} ions on the optical properties of tungsten mirrors was studied. Ar{sup +} ions with 600 eV of energy were used as imitation of charge exchange atoms ejected from fusion plasma. The ion fluence dependence of the surface topography and the optical properties of polycrystalline, recrystallized tungsten (grain size 20–100 μm) were studied by optical microscopy, interferometry, reflectometry and ellipsometry. Furthermore, after sputtering in total a layer of 3.9 μm in thickness, the orientation and the thickness of the eroded layer of many individual grains was determined by electron backscattering diffraction and confocal laser scanning microscopy. Concluding from the obtained data the neutron irradiation, at least at the damage level would be achieved in ITER, has not to make an additional contribution in the processes developing under impact of charge exchange atoms only.

  9. Selective resputtering of bismuth in sputtered Bi-Sr-Ca-Cu-O films

    Science.gov (United States)

    Grace, J. M.; McDonald, D. B.; Reiten, M. T.; Olson, J.; Kampwirth, R. T.; Gray, K. E.

    1991-10-01

    We present studies using a dc magnetron in an on-axis configuration to sputter Bi-Sr-Ca-Cu-O films from a composite target. These studies show that bismuth can be preferentially resputtered. The influence of ozone, molecular oxygen, and total pressure on the resputtering of bismuth is investigated and discussed. Ozone, in low concentrations, can dramatically affect the degree of resputtering. By comparing the effects of molecular oxygen and ozone, some insight is gained regarding the possible mechanisms of negative ion formation in the magnetron environment. Based on our results we suggest that molecular oxygen can bring about resputtering primarily by forming O+2, which collides with the target to produce energetic negative oxygen ions. In contrast, ozone may form negative ions by electron impact in the dark space above the target, giving rise to lower-energy negative ions, which can traverse the plasma unneutralized and can be stopped with an applied bias on the sample block. With no added oxidant, negative oxygen ions from the target oxygen may dominate the background resputtering. Similarity is found between our results and those for similar studies on Y-Ba-Cu-O by other workers. Bismuth in Bi-Sr-Ca-Cu-O behaves as barium in Y-Ba-Cu-O with regards to preferential resputtering; furthermore, the response of strontium, calcium, and copper to oxygen in sputtered Bi-Sr-Ca-Cu-O is similar to what is observed for copper in Y-Ba-Cu-O.

  10. Selective resputtering of bismuth in sputtered Bi-Sr-Ca-Cu-O films

    International Nuclear Information System (INIS)

    Grace, J.M.; McDonald, D.B.; Reiten, M.T.; Olson, J.; Kampwirth, R.T.; Gray, K.E.

    1991-01-01

    We present studies using a dc magnetron in an on-axis configuration to sputter Bi-Sr-Ca-Cu-O films from a composite target. These studies show that bismuth can be preferentially resputtered. The influence of ozone, molecular oxygen, and total pressure on the resputtering of bismuth is investigated and discussed. Ozone, in low concentrations, can dramatically affect the degree of resputtering. By comparing the effects of molecular oxygen and ozone, some insight is gained regarding the possible mechanisms of negative ion formation in the magnetron environment. Based on our results we suggest that molecular oxygen can bring about resputtering primarily by forming O + 2 , which collides with the target to produce energetic negative oxygen ions. In contrast, ozone may form negative ions by electron impact in the dark space above the target, giving rise to lower-energy negative ions, which can traverse the plasma unneutralized and can be stopped with an applied bias on the sample block. With no added oxidant, negative oxygen ions from the target oxygen may dominate the background resputtering. Similarity is found between our results and those for similar studies on Y-Ba-Cu-O by other workers. Bismuth in Bi-Sr-Ca-Cu-O behaves as barium in Y-Ba-Cu-O with regards to preferential resputtering; furthermore, the response of strontium, calcium, and copper to oxygen in sputtered Bi-Sr-Ca-Cu-O is similar to what is observed for copper in Y-Ba-Cu-O

  11. TiOx deposited by magnetron sputtering: a joint modelling and experimental study

    Science.gov (United States)

    Tonneau, R.; Moskovkin, P.; Pflug, A.; Lucas, S.

    2018-05-01

    This paper presents a 3D multiscale simulation approach to model magnetron reactive sputter deposition of TiOx⩽2 at various O2 inlets and its validation against experimental results. The simulation first involves the transport of sputtered material in a vacuum chamber by means of a three-dimensional direct simulation Monte Carlo (DSMC) technique. Second, the film growth at different positions on a 3D substrate is simulated using a kinetic Monte Carlo (kMC) method. When simulating the transport of species in the chamber, wall chemistry reactions are taken into account in order to get the proper content of the reactive species in the volume. Angular and energy distributions of particles are extracted from DSMC and used for film growth modelling by kMC. Along with the simulation, experimental deposition of TiOx coatings on silicon samples placed at different positions on a curved sample holder was performed. The experimental results are in agreement with the simulated ones. For a given coater, the plasma phase hysteresis behaviour, film composition and film morphology are predicted. The used methodology can be applied to any coater and any films. This paves the way to the elaboration of a virtual coater allowing a user to predict composition and morphology of films deposited in silico.

  12. Rhodium-coated mirrors deposited by magnetron sputtering for fusion applications

    International Nuclear Information System (INIS)

    Marot, L.; Temmermann, G. de; Oelhafen, P.; Mathys, D.; Covarel, G.; Litnovsky, A.

    2007-01-01

    Metallic mirrors will be essential components of all optical spectroscopy and imaging systems for plasma diagnostics that will be used in ITER. Any change in the mirror performance, in particular its reflectivity, will influence the quality and reliability of detected signals. Due to its high reflectivity in the visible wavelength range and its low sputtering yield, rhodium may be a good candidate material for first mirrors in ITER. However, the very high price of the raw material calls for using it in the form of a film deposited onto metallic substrates. The development of a reliable technique for the preparation of high reflectivity rhodium films is therefore of the highest importance. Rhodium layers with thicknesses of up to 2 μm were produced on different relevant substrates (Mo, Stainless Steel, Cu) by magnetron sputtering. Produced films exhibit a low roughness, crystallite size of about 10 nm with a dense columnar structure. No impurities were detected on the surface after deposition. Scratch test results demonstrate that adhesion properties increase with the substrate hardness. The detailed optical characterizations of Rh coated mirrors as well as the results of erosion tests performed both under laboratory conditions and in TEXTOR will be presented in this paper. (orig.)

  13. Novel high power impulse magnetron sputtering enhanced by an auxiliary electrical field

    Energy Technology Data Exchange (ETDEWEB)

    Li, Chunwei, E-mail: lcwnefu@126.com, E-mail: xiubotian@163.com [College of Engineering and Technology, Northeast Forestry University, Harbin 150040 (China); State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin 150001 (China); Tian, Xiubo, E-mail: lcwnefu@126.com, E-mail: xiubotian@163.com [State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin 150001 (China)

    2016-08-15

    The high power impulse magnetron sputtering (HIPIMS) technique is a novel highly ionized physical vapor deposition method with a high application potential. However, the electron utilization efficiency during sputtering is rather low and the metal particle ionization rate needs to be considerably improved to allow for a large-scale industrial application. Therefore, we enhanced the HIPIMS technique by simultaneously applying an electric field (EF-HIPIMS). The effect of the electric field on the discharge process was studied using a current sensor and an optical emission spectrometer. Furthermore, the spatial distribution of the electric potential and electric field during the EF-HIPIMS process was simulated using the ANSYS software. The results indicate that a higher electron utilization efficiency and a higher particle ionization rate could be achieved. The auxiliary anode obviously changed the distribution of the electric potential and the electric field in the discharge region, which increased the plasma density and enhanced the degree of ionization of the vanadium and argon gas. Vanadium films were deposited to further compare both techniques, and the morphology of the prepared films was investigated by scanning electron microscopy. The films showed a smaller crystal grain size and a denser growth structure when the electric field was applied during the discharge process.

  14. Technology and applications of broad-beam ion sources used in sputtering. Part II. Applications

    International Nuclear Information System (INIS)

    Harper, J.M.E.; Cuomo, J.J.; Kaufman, H.R.

    1982-01-01

    The developments in broad-beam ion source technology described in the companion paper (Part I) have stimulated a rapid expansion in applications to materials processing. These applications are reviewed here, beginning with a summary of sputtering mechanisms. Next, etching applications are described, including microfabrication and reactive ion beam etching. The developing area of surface layer applications is summarized, and related to the existing fields of oxidation and implantation. Next, deposition applications are reviewed, including ion-beam sputter deposition and the emerging technique of ion-assisted vapor deposition. Many of these applications have been stimulated by the development of high current ion sources operating in the energy range of tens of hundreds of eV. It is in this energy range that ion-activated chemical etching is efficient, self-limiting compound layers can be grown, and the physical properties of vapor-deposited films can be modified. In each of these areas, broad ion beam technology provides a link between other large area plasma processes and surface analytical techniques using ion beams

  15. High-rate deposition of Ta-doped SnO2 films by reactive magnetron sputtering using a Sn–Ta metal-sintered target

    International Nuclear Information System (INIS)

    Muto, Y.; Nakatomi, S.; Oka, N.; Iwabuchi, Y.; Kotsubo, H.; Shigesato, Y.

    2012-01-01

    Ta-doped SnO 2 films were deposited on glass substrate (either unheated or heated at 200 °C) by reactive magnetron sputtering with a Sn–Ta metal-sintered target using a plasma control unit (PCU) and mid-frequency (mf, 50 kHz) unipolar pulsing. The PCU feedback system precisely controlled the flow of the reactive and sputtering gases (O 2 and Ar, respectively) by monitoring either discharge impedance or the plasma emission of the atomic O* line at 777 nm. The planar target was connected to the switching unit, which was operated in unipolar pulse mode. Power density on the target was maintained at 4.4 W cm −2 during deposition. The lowest obtained resistivity for the films deposited on heated substrate was 6.4 × 10 −3 Ωcm, where the deposition rate was 250 nm min −1 .

  16. On the control of deposition process for enhanced mechanical properties of nc-TiC/a-C: H coatings with DC magnetron sputtering at low or high ion flux

    Czech Academy of Sciences Publication Activity Database

    Souček, P.; Schmidtová, T.; Zábranský, L.; Buršíková, V.; Vašina, P.; Caha, O.; Buršík, Jiří; Peřina, Vratislav; Mikšová, Romana; Pei, Y.; de Hosson, J. T. M.

    Roč. 255, 25 September (2014), s. 8-14 ISSN 0257-8972 Institutional support: RVO:68081723 ; RVO:61389005 Keywords : enhanced mechanical properties * ion flux on the substrate * magnetron sputtering Subject RIV: BL - Plasma and Gas Discharge Physics Impact factor: 1.998, year: 2014

  17. Sputtered titanium oxynitride coatings for endosseous applications: Physical and chemical evaluation and first bioactivity assays

    Energy Technology Data Exchange (ETDEWEB)

    Banakh, Oksana, E-mail: oksana.banakh@he-arc.ch [Institute of Applied Microtechnologies, Haute Ecole Arc Ingénierie (HES-SO), Eplatures-Grise 17, CH-2300 La Chaux-de-Fonds (Switzerland); Moussa, Mira, E-mail: mira.moussa@unige.ch [Laboratory of Biomaterials, University of Geneva, 19, rue Barthelemy Menn, CH-1205 Geneva (Switzerland); Matthey, Joel, E-mail: joel.matthey@he-arc.ch [Institute of Applied Microtechnologies, Haute Ecole Arc Ingénierie (HES-SO), Eplatures-Grise 17, CH-2300 La Chaux-de-Fonds (Switzerland); Pontearso, Alessandro, E-mail: alessandro.pontearso@he-arc.ch [Institute of Applied Microtechnologies, Haute Ecole Arc Ingénierie (HES-SO), Eplatures-Grise 17, CH-2300 La Chaux-de-Fonds (Switzerland); Cattani-Lorente, Maria, E-mail: maria.cattani-lorente@unige.ch [Laboratory of Biomaterials, University of Geneva, 19, rue Barthelemy Menn, CH-1205 Geneva (Switzerland); Sanjines, Rosendo, E-mail: rosendo.sanjines@epfl.ch [Ecole Polytechnique Fédérale de Lausanne (EPFL), Institute of Condensed Matter Physics, Station 3, CH-1015 Lausanne (Switzerland); Fontana, Pierre, E-mail: Pierre.Fontana@hcuge.ch [Haemostasis laboratory, Geneva University Hospital, Rue Gabrielle-Perret-Gentil 4, CH-1205 Geneva (Switzerland); Wiskott, Anselm, E-mail: anselm.wiskott@unige.ch [Laboratory of Biomaterials, University of Geneva, 19, rue Barthelemy Menn, CH-1205 Geneva (Switzerland); Durual, Stephane, E-mail: stephane.durual@unige.ch [Laboratory of Biomaterials, University of Geneva, 19, rue Barthelemy Menn, CH-1205 Geneva (Switzerland)

    2014-10-30

    Highlights: • Titanium oxynitride coatings (TiN{sub x}O{sub y}) with chemical composition ranging from TiN to TiO{sub 2} were deposited by magnetron sputtering from a metallic Ti target using a mixture of O{sub 2} + N{sub 2}. • The coatings structure as well as physical, chemical and mechanical properties progressively changes as a function of oxygen content in the TiN{sub x}O{sub y.} • All TiN{sub x}O{sub y} coatings show a significantly higher level of bioactivity as compared to bare Ti substrates (1.2 to 1.4 fold increase in cell proliferation). Despite variations in surface chemistry, topography and surface tension observed on films as a function of chemical composition, no significant differences in the films’ biological activity were observed after 3 days of testing. - Abstract: Titanium oxynitride coatings (TiN{sub x}O{sub y}) are considered a promising material for applications in dental implantology due to their high corrosion resistance, their biocompatibility and their superior hardness. Using the sputtering technique, TiN{sub x}O{sub y} films with variable chemical compositions can be deposited. These films may then be set to a desired value by varying the process parameters, that is, the oxygen and nitrogen gas flows. To improve the control of the sputtering process with two reactive gases and to achieve a variable and controllable coating composition, the plasma characteristics were monitored in-situ by optical emission spectroscopy. TiN{sub x}O{sub y} films were deposited onto commercially pure (ASTM 67) microroughened titanium plates by reactive magnetron sputtering. The nitrogen gas flow was kept constant while the oxygen gas flow was adjusted for each deposition run to obtain films with different oxygen and nitrogen contents. The physical and chemical properties of the deposited films were analyzed as a function of oxygen content in the titanium oxynitride. The potential application of the coatings in dental implantology was assessed by

  18. High-surface-quality nanocrystalline InN layers deposited on GaN templates by RF sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Valdueza-Felip, Sirona; Naranjo, Fernando B.; Gonzalez-Herraez, Miguel [Grupo de Ingenieria Fotonica, Departamento de Electronica, Escuela Politecnica Superior, Universidad de Alcala, Campus Universitario, 28871 Alcala de Henares, Madrid (Spain); Lahourcade, Lise; Monroy, Eva [Equipe mixte CEA-CNRS-UJF, Nanophysique et Semiconducteurs, INAC/SP2M/PSC, CEA-Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France); Fernandez, Susana [Departamento de Energias Renovables, Energia Solar Fotovoltaica, Centro de Investigaciones Energeticas, Medioambientales y Tecnologicas (CIEMAT), Avda. Complutense 22, 28040 Madrid (Spain)

    2011-01-15

    We report a detailed study of the effect of deposition parameters on optical, structural, and morphological properties of InN films grown by reactive radio-frequency (RF) sputtering on GaN-on-sapphire templates in a pure nitrogen atmosphere. Deposition parameters under study are substrate temperature, RF power, and sputtering pressure. Wurtzite crystallographic structure with c-axis preferred growth orientation is confirmed by X-ray diffraction measurements. For the optimized deposition conditions, namely at a substrate temperature of 450 C and RF power of 30 W, InN films present a root-mean-square surface roughness as low as {proportional_to}0.4 nm, comparable to the underlying substrate. The apparent optical bandgap is estimated at 720 nm (1.7 eV) in all cases. However, the InN absorption band tail is strongly influenced by the sputtering pressure due to a change in the species of the plasma. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  19. Laterally resolved ion-distribution functions at the substrate position during magnetron sputtering of indium-tin oxide films

    International Nuclear Information System (INIS)

    Plagemann, A.; Ellmer, K.; Wiesemann, K.

    2007-01-01

    During the magnetron sputtering from an indium-tin oxide (ITO) target (76 mm diameter) we measured the ion-distribution functions (IDFs) of energetic ions (argon, indium, and oxygen ions) at the substrate surface using a combination of a quadrupole mass spectrometer and an electrostatic energy analyzer. We obtained the IDFs for argon sputtering pressures in the range from 0.08 to 2 Pa and for dc as well as rf (13.56 MHz) plasma excitation with powers from 10 to 100 W. The IDF measurements were performed both over the target center at a target-to-substrate distance of 65 mm and at different positions along the target radius in order to scan the erosion track of the target. The mean kinetic energies of argon ions calculated from the IDFs in the dc plasma decreased from about 30 to 15 eV, when the argon pressure increased from 0.08 to 2 Pa, which is caused by a decrease of the electron temperature also by a factor of 2. Indium atoms exhibit higher mean energies due to their additional energy from the sputtering process. The total metal ion flux turns out to be proportional to the discharge power and the pressure, the latter dependence being due to Penning ionization of the metal atoms (In and Sn). From the scans across the target surface the lateral distributions of metal, oxygen, and argon ions were derived. In the dc discharge the position of the erosion track is reproduced by increased ion intensities, while it is not the case for the rf excited plasma. The lateral variations of the observed species do not influence the lateral resistivity distributions of the deposited ITO films

  20. Bright environments vision of the Intelligent Lighting Institute (ILI)

    NARCIS (Netherlands)

    Özçelebi, T.

    2014-01-01

    The Bright Environments research program of the Eindhoven University of Technology Intelligent Lighting Institute aims to find new methods of intelligent lighting control and human interaction. We present a summary of the institute’s work on this research field and the research vision of the Bright