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Sample records for boron-doped nanocrystalline diamond

  1. Characterization of boron doped nanocrystalline diamonds

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    Peterlevitz, A C; Manne, G M; Sampaio, M A; Quispe, J C R; Pasquetto, M P; Iannini, R F; Ceragioli, H J; Baranauskas, V [Faculdade de Engenharia Eletrica e Computacao, Departamento de Semicondutores, Instrumentos e Fotonica, Universidade Estadual de Campinas, UNICAMP, Av. Albert Einstein N.400, 13083-852 Campinas SP Brasil (Brazil)], E-mail: vitor.baranauskas@gmail.com

    2008-03-15

    Nanostructured diamond doped with boron was prepared using a hot-filament assisted chemical vapour deposition system fed with an ethyl alcohol, hydrogen and argon mixture. The reduction of the diamond grains to the nanoscale was produced by secondary nucleation and defects induced by argon and boron atoms via surface reactions during chemical vapour deposition. Raman measurements show that the samples are nanodiamonds embedded in a matrix of graphite and disordered carbon grains, while morphological investigations using field electron scanning microscopy show that the size of the grains ranges from 20 to 100 nm. The lowest threshold fields achieved were in the 1.6 to 2.4 V/{mu}m range.

  2. Boron Doped Nanocrystalline Diamond Films for Biosensing Applications

    Directory of Open Access Journals (Sweden)

    V. Petrák

    2011-01-01

    Full Text Available With the rise of antibiotic resistance of pathogenic bacteria there is an increased demand for monitoring the functionality of bacteria membranes, the disruption of which can be induced by peptide-lipid interactions. In this work we attempt to construct and disrupt supported lipid membranes (SLB on boron doped nanocrystalline diamond (B-NCD. Electrochemical Impedance Spectroscopy (EIS was used to study in situ changes related to lipid membrane formation and disruption by peptide-induced interactions. The observed impedance changes were minimal for oxidized B-NCD samples, but were still detectable in the low frequency part of the spectra. The sensitivity for the detection of membrane formation and disruption was significantly higher for hydrogenated B-NCD surfaces. Data modeling indicates large changes in the electrical charge when an electrical double layer is formed at the B-NCD/SLB interface, governed by ion absorption. By contrast, for oxidized B-NCD surfaces, these changes are negligible indicating little or no change in the surface band bending profile.

  3. Cytotoxicity of Boron-Doped Nanocrystalline Diamond Films Prepared by Microwave Plasma Chemical Vapor Deposition

    Science.gov (United States)

    Liu, Dan; Gou, Li; Ran, Junguo; Zhu, Hong; Zhang, Xiang

    2015-07-01

    Boron-doped nanocrystalline diamond (NCD) exhibits extraordinary mechanical properties and chemical stability, making it highly suitable for biomedical applications. For implant materials, the impact of boron-doped NCD films on the character of cell growth (i.e., adhesion, proliferation) is very important. Boron-doped NCD films with resistivity of 10-2 Ω·cm were grown on Si substrates by the microwave plasma chemical vapor deposition (MPCVD) process with H2 bubbled B2O3. The crystal structure, diamond character, surface morphology, and surface roughness of the boron-doped NCD films were analyzed using different characterization methods, such as X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM) and atomic force microscopy (AFM). The contact potential difference and possible boron distribution within the film were studied with a scanning kelvin force microscope (SKFM). The cytotoxicity of films was studied by in vitro tests, including fluorescence microscopy, SEM and MTT assay. Results indicated that the surface roughness value of NCD films was 56.6 nm and boron was probably accumulated at the boundaries between diamond agglomerates. MG-63 cells adhered well and exhibited a significant growth on the surface of films, suggesting that the boron-doped NCD films were non-toxic to cells. supported by the Open Foundation of State Key Laboratory of Electronic Thin Films and Integrated Devices (University of Electronic Science and Technology of China) (No. KFJJ201313)

  4. Increased charge storage capacity of titanium nitride electrodes by deposition of boron-doped nanocrystalline diamond films

    DEFF Research Database (Denmark)

    Meijs, Suzan; McDonald, Matthew; Sørensen, Søren;

    2015-01-01

    The aim of this study was to investigate the feasibility of depositing a thin layer of boron-doped nanocrystalline diamond (B-NCD) on titanium nitride (TiN) coated electrodes and the effect this has on charge injection properties. The charge storage capacity increased by applying the B-NCD film...

  5. Boron-Doped Nanocrystalline Diamond Electrodes for Neural Interfaces: In vivo Biocompatibility Evaluation.

    Science.gov (United States)

    Alcaide, María; Taylor, Andrew; Fjorback, Morten; Zachar, Vladimir; Pennisi, Cristian P

    2016-01-01

    Boron-doped nanocrystalline diamond (BDD) electrodes have recently attracted attention as materials for neural electrodes due to their superior physical and electrochemical properties, however their biocompatibility remains largely unexplored. In this work, we aim to investigate the in vivo biocompatibility of BDD electrodes in relation to conventional titanium nitride (TiN) electrodes using a rat subcutaneous implantation model. High quality BDD films were synthesized on electrodes intended for use as an implantable neurostimulation device. After implantation for 2 and 4 weeks, tissue sections adjacent to the electrodes were obtained for histological analysis. Both types of implants were contained in a thin fibrous encapsulation layer, the thickness of which decreased with time. Although the level of neovascularization around the implants was similar, BDD electrodes elicited significantly thinner fibrous capsules and a milder inflammatory reaction at both time points. These results suggest that BDD films may constitute an appropriate material to support stable performance of implantable neural electrodes over time.

  6. Granular superconductivity in metallic and insulating nanocrystalline boron-doped diamond thin films

    Energy Technology Data Exchange (ETDEWEB)

    Willems, B L; Zhang, G; Vanacken, J; Moshchalkov, V V [INPAC-Institute for Nanoscale Physics and Chemistry, Katholieke Universiteit Leuven, Celestijnenlaan 200-D, 3000-Leuven (Belgium); Janssens, S D; Haenen, K; Wagner, P, E-mail: bramleo@hotmail.co [Institute for Materials Research (IMO), Hasselt University, BE-3590 Diepenbeek (Belgium)

    2010-09-22

    The low-temperature electrical transport properties of nanocrystalline boron-doped diamond (b-NCD) thin films have been found to be strongly affected by the system's granularity. The important differences between the high and low-temperature behaviour are caused by the inhomogeneous nucleation of superconductivity in the samples. In this paper we will discuss the experimental data obtained on several b-NCD thin films, which were studied by either varying their thickness or boron concentration. It will be shown that the low-temperature properties are influenced by the b-NCD grain boundaries as well as by the appearance of an intrinsic granularity inside these granules. Moreover, superconducting effects have been found to be present even in insulating b-NCD films and are responsible for the negative magnetoresistance regime observed at low temperatures. On the other hand, the low-temperature electrical transport properties of b-NCD films show important similarities with those observed for granular superconductors.

  7. Electrochemical decolorization of dye wastewater by surface-activated boron-doped nanocrystalline diamond electrode.

    Science.gov (United States)

    Chen, Chienhung; Nurhayati, Ervin; Juang, Yaju; Huang, Chihpin

    2016-07-01

    Complex organics contained in dye wastewater are difficult to degrade and often require electrochemical advanced oxidation processes (EAOPs) to treat it. Surface activation of the electrode used in such treatment is an important factor determining the success of the process. The performance of boron-doped nanocrystalline diamond (BD-NCD) film electrode for decolorization of Acid Yellow (AY-36) azo dye with respect to the surface activation by electrochemical polarization was studied. Anodic polarization found to be more suitable as electrode pretreatment compared to cathodic one. After anodic polarization, the originally H-terminated surface of BD-NCD was changed into O-terminated, making it more hydrophilic. Due to the oxidation of surface functional groups and some portion of sp(2) carbon in the BD-NCD film during anodic polarization, the electrode was successfully being activated showing lower background current, wider potential window and considerably less surface activity compared to the non-polarized one. Consequently, electrooxidation (EO) capability of the anodically-polarized BD-NCD to degrade AY-36 dye was significantly enhanced, capable of nearly total decolorization and chemical oxygen demand (COD) removal even after several times of re-using. The BD-NCD film electrode favored acidic condition for the dye degradation; and the presence of chloride ion in the solution was found to be more advantageous than sulfate active species.

  8. Effect of nitrogen on deposition and field emission properties of boron-doped micro-and nano-crystalline diamond films

    Institute of Scientific and Technical Information of China (English)

    L.A. Li; S.H. Cheng; H.D. Li; Q. Yu; J.W. Liu; X.Y. Lv

    2010-01-01

    In this paper, we report the effect of nitrogen on the deposition and properties of boron doped diamond films synthesized by hot filament chemical vapor deposition. The diamond films consisting of micro-grains (nano-grains) were realized with low (high) boron source flow rate during the growth processes. The transition of micro-grains to nano-grains is speculated to be strongly (weekly) related with the boron (nitrogen) flow rate. The grain size and Raman spectral feature vary insignificantly as a function of the nitrogen introduction at a certain boron flow rate. The variation of electron field emission characteristics dependent on nitrogen is different between microcrystalline and nanocrystalline boron doped diamond samples, which are related to the combined phase composition, boron doping level and texture structure. There is an optimum nitrogen proportion to improve the field emission properties of the boron-doped films.

  9. Lead detection using micro/nanocrystalline boron-doped diamond by square-wave anodic stripping voltammetry.

    Science.gov (United States)

    Arantes, Tatiane M; Sardinha, André; Baldan, Mauricio R; Cristovan, Fernando H; Ferreira, Neidenei G

    2014-10-01

    Monitoring heavy metal ion levels in water is essential for human health and safety. Electroanalytical techniques have presented important features to detect toxic trace heavy metals in the environment due to their high sensitivity associated with their easy operational procedures. Square-wave voltammetry is a powerful electrochemical technique that may be applied to both electrokinetic and analytical measurements, and the analysis of the characteristic parameters of this technique also enables the mechanism and kinetic evaluation of the electrochemical process under study. In this work, we present a complete optimized study on the heavy metal detection using diamond electrodes. It was analyzed the influence of the morphology characteristics as well as the doping level on micro/nanocrystalline boron-doped diamond films by means of square-wave anodic stripping voltammetry (SWASV) technique. The SWASV parameters were optimized for all films, considering that their kinetic response is dependent on the morphology and/or doping level. The films presented reversible results for the Lead [Pb (II)] system studied. The Pb (II) analysis was performed in ammonium acetate buffer at pH 4.5, varying the lead concentration in the range from 1 to 10 μg L(-1). The analytical responses were obtained for the four electrodes. However, the best low limit detection and reproducibility was found for boron doped nanocrystalline diamond electrodes (BDND) doped with 2000 mg L(-1) in B/C ratio.

  10. Resistance to protein adsorption and adhesion of fibroblasts on nanocrystalline diamond films: the role of topography and boron doping.

    Science.gov (United States)

    Alcaide, María; Papaioannou, Stavros; Taylor, Andrew; Fekete, Ladislav; Gurevich, Leonid; Zachar, Vladimir; Pennisi, Cristian Pablo

    2016-05-01

    Boron-doped nanocrystalline diamond (BNCD) films exhibit outstanding electrochemical properties that make them very attractive for the fabrication of electrodes for novel neural interfaces and prosthetics. In these devices, the physicochemical properties of the electrode materials are critical to ensure an efficient long-term performance. The aim of this study was to investigate the relative contribution of topography and doping to the biological performance of BNCD films. For this purpose, undoped and boron-doped NCD films were deposited on low roughness (LR) and high roughness (HR) substrates, which were studied in vitro by means of protein adsorption and fibroblast growth assays. Our results show that BNCD films significantly reduce the adsorption of serum proteins, mostly on the LR substrates. As compared to fibroblasts cultured on LR BNCD films, cells grown on the HR BNCD films showed significantly reduced adhesion and lower growth rates. The mean length of fibronectin fibrils deposited by the cells was significantly increased in the BNCD coated substrates, mainly in the LR surfaces. Overall, the largest influence on protein adsorption, cell adhesion, proliferation, and fibronectin deposition was due to the underlying sub-micron topography, with little or no influence of boron doping. In perspective, BNCD films displaying surface roughness in the submicron range may be used as a strategy to reduce the fibroblast growth on the surface of neural electrodes.

  11. Enhanced growth and osteogenic differentiation of human osteoblast-like cells on boron-doped nanocrystalline diamond thin films.

    Directory of Open Access Journals (Sweden)

    Lubica Grausova

    Full Text Available Intrinsic nanocrystalline diamond (NCD films have been proven to be promising substrates for the adhesion, growth and osteogenic differentiation of bone-derived cells. To understand the role of various degrees of doping (semiconducting to metallic-like, the NCD films were deposited on silicon substrates by a microwave plasma-enhanced CVD process and their boron doping was achieved by adding trimethylboron to the CH(4:H(2 gas mixture, the B∶C ratio was 133, 1000 and 6700 ppm. The room temperature electrical resistivity of the films decreased from >10 MΩ (undoped films to 55 kΩ, 0.6 kΩ, and 0.3 kΩ (doped films with 133, 1000 and 6700 ppm of B, respectively. The increase in the number of human osteoblast-like MG 63 cells in 7-day-old cultures on NCD films was most apparent on the NCD films doped with 133 and 1000 ppm of B (153,000 ± 14,000 and 152,000 ± 10,000 cells/cm(2, respectively, compared to 113,000 ± 10,000 cells/cm(2 on undoped NCD films. As measured by ELISA per mg of total protein, the cells on NCD with 133 and 1000 ppm of B also contained the highest concentrations of collagen I and alkaline phosphatase, respectively. On the NCD films with 6700 ppm of B, the cells contained the highest concentration of focal adhesion protein vinculin, and the highest amount of collagen I was adsorbed. The concentration of osteocalcin also increased with increasing level of B doping. The cell viability on all tested NCD films was almost 100%. Measurements of the concentration of ICAM-1, i.e. an immunoglobuline adhesion molecule binding inflammatory cells, suggested that the cells on the NCD films did not undergo significant immune activation. Thus, the potential of NCD films for bone tissue regeneration can be further enhanced and tailored by B doping and that B doping up to metallic-like levels is not detrimental for cells.

  12. Boron doped diamond biotechnology: from sensors to neurointerfaces.

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    Hébert, C; Scorsone, E; Bendali, A; Kiran, R; Cottance, M; Girard, H A; Degardin, J; Dubus, E; Lissorgues, G; Rousseau, L; Mailley, P; Picaud, S; Bergonzo, P

    2014-01-01

    Boron doped nanocrystalline diamond is known as a remarkable material for the fabrication of sensors, taking advantage of its biocompatibility, electrochemical properties, and stability. Sensors can be fabricated to directly probe physiological species from biofluids (e.g. blood or urine), as will be presented. In collaboration with electrophysiologists and biologists, the technology was adapted to enable structured diamond devices such as microelectrode arrays (MEAs), i.e. common electrophysiology tools, to probe neuronal activity distributed over large populations of neurons or embryonic organs. Specific MEAs can also be used to build neural prostheses or implants to compensate function losses due to lesions or degeneration of parts of the central nervous system, such as retinal implants, which exhibit real promise as biocompatible neuroprostheses for in vivo neuronal stimulations. New electrode geometries enable high performance electrodes to surpass more conventional materials for such applications.

  13. Bosonic Anomalies in Boron-Doped Polycrystalline Diamond

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    Zhang, Gufei; Samuely, Tomas; Kačmarčík, Jozef; Ekimov, Evgeny A.; Li, Jun; Vanacken, Johan; Szabó, Pavol; Huang, Junwei; Pereira, Paulo J.; Cerbu, Dorin; Moshchalkov, Victor V.

    2016-12-01

    Quantum confinement and coherence effects are considered the cause of many specific features for systems which are generally low dimensional, strongly disordered, and/or situated in the vicinity of the metal-insulator transition. Here, we report on the observation of anomalous resistance peak and specific heat peaks superimposed at the superconducting transition of heavily boron-doped polycrystalline bulk diamond, which is a three-dimensional system situated deep on the metallic side of the boron-doping-driven metal-insulator transition in diamond. The anomalous resistance peak and specific heat peaks are interpreted as a result of confinement and coherence effects in the presence of intrinsic and extrinsic granularity. Our data, obtained for superconducting diamond, provide a reference for understanding the superconductivity in other granular disordered systems. Furthermore, our study brings attention to the significant influence of granular disorder on the physical properties of boron-doped diamond, which is considered a promising candidate for electronics applications.

  14. 11B nuclear magnetic resonance in boron-doped diamond

    Directory of Open Access Journals (Sweden)

    Miwa Murakami, Tadashi Shimizu, Masataka Tansho and Yoshihiko Takano

    2008-01-01

    Full Text Available This review summarizes recent results obtained by 11B solid-state nuclear magnetic resonance (NMR on boron-doped diamond, grown by the high-pressure high-temperature (HPHT or chemical vapor deposition techniques. Simple single-pulse experiments as well as advanced two-dimensional NMR experiments were applied to the boron sites in diamond. It is shown that magic-angle spinning at magnetic fields above 10 T is suitable for observation of high-resolution 11B spectra of boron-doped diamond. For boron-doped HPHT diamonds, the existence of the excess boron that does not contribute to electrical conductivity was confirmed and its 11B NMR signal was characterized. The point-defect structures (B+H complexes and -B-B-/-B-C-B- clusters, postulated previously for the excess boron, were discarded and graphite-like structures were assigned instead.

  15. Diamond-modified AFM probes: from diamond nanowires to atomic force microscopy-integrated boron-doped diamond electrodes.

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    Smirnov, Waldemar; Kriele, Armin; Hoffmann, René; Sillero, Eugenio; Hees, Jakob; Williams, Oliver A; Yang, Nianjun; Kranz, Christine; Nebel, Christoph E

    2011-06-15

    In atomic force microscopy (AFM), sharp and wear-resistant tips are a critical issue. Regarding scanning electrochemical microscopy (SECM), electrodes are required to be mechanically and chemically stable. Diamond is the perfect candidate for both AFM probes as well as for electrode materials if doped, due to diamond's unrivaled mechanical, chemical, and electrochemical properties. In this study, standard AFM tips were overgrown with typically 300 nm thick nanocrystalline diamond (NCD) layers and modified to obtain ultra sharp diamond nanowire-based AFM probes and probes that were used for combined AFM-SECM measurements based on integrated boron-doped conductive diamond electrodes. Analysis of the resonance properties of the diamond overgrown AFM cantilevers showed increasing resonance frequencies with increasing diamond coating thicknesses (i.e., from 160 to 260 kHz). The measured data were compared to performed simulations and show excellent correlation. A strong enhancement of the quality factor upon overgrowth was also observed (120 to 710). AFM tips with integrated diamond nanowires are shown to have apex radii as small as 5 nm and where fabricated by selectively etching diamond in a plasma etching process using self-organized metal nanomasks. These scanning tips showed superior imaging performance as compared to standard Si-tips or commercially available diamond-coated tips. The high imaging resolution and low tip wear are demonstrated using tapping and contact mode AFM measurements by imaging ultra hard substrates and DNA. Furthermore, AFM probes were coated with conductive boron-doped and insulating diamond layers to achieve bifunctional AFM-SECM probes. For this, focused ion beam (FIB) technology was used to expose the boron-doped diamond as a recessed electrode near the apex of the scanning tip. Such a modified probe was used to perform proof-of-concept AFM-SECM measurements. The results show that high-quality diamond probes can be fabricated, which are

  16. Global and local superconductivity in boron-doped granular diamond.

    Science.gov (United States)

    Zhang, Gufei; Turner, Stuart; Ekimov, Evgeny A; Vanacken, Johan; Timmermans, Matias; Samuely, Tomás; Sidorov, Vladimir A; Stishov, Sergei M; Lu, Yinggang; Deloof, Bart; Goderis, Bart; Van Tendeloo, Gustaaf; Van de Vondel, Joris; Moshchalkov, Victor V

    2014-04-02

    Strong granularity-correlated and intragrain modulations of the superconducting order parameter are demonstrated in heavily boron-doped diamond situated not yet in the vicinity of the metal-insulator transition. These modulations at the superconducting state (SC) and at the global normal state (NS) above the resistive superconducting transition, reveal that local Cooper pairing sets in prior to the global phase coherence.

  17. Temperature admittance spectroscopy of boron doped chemical vapor deposition diamond

    Energy Technology Data Exchange (ETDEWEB)

    Zubkov, V. I., E-mail: VZubkovspb@mail.ru; Kucherova, O. V.; Zubkova, A. V.; Ilyin, V. A.; Afanas' ev, A. V. [St. Petersburg State Electrotechnical University (LETI), Professor Popov Street 5, 197376 St. Petersburg (Russian Federation); Bogdanov, S. A.; Vikharev, A. L. [Institute of Applied Physics of the Russian Academy of Sciences, Ul' yanov Street 46, 603950 Nizhny Novgorod (Russian Federation); Butler, J. E. [St. Petersburg State Electrotechnical University (LETI), Professor Popov Street 5, 197376 St. Petersburg (Russian Federation); Institute of Applied Physics of the Russian Academy of Sciences, Ul' yanov Street 46, 603950 Nizhny Novgorod (Russian Federation); National Museum of Natural History (NMNH), P.O. Box 37012 Smithsonian Inst., Washington, D.C. 20013-7012 (United States)

    2015-10-14

    Precision admittance spectroscopy measurements over wide temperature and frequency ranges were carried out for chemical vapor deposition epitaxial diamond samples doped with various concentrations of boron. It was found that the experimentally detected boron activation energy in the samples decreased from 314 meV down to 101 meV with an increase of B/C ratio from 600 to 18000 ppm in the gas reactants. For the heavily doped samples, a transition from thermally activated valence band conduction to hopping within the impurity band (with apparent activation energy 20 meV) was detected at temperatures 120–150 K. Numerical simulation was used to estimate the impurity DOS broadening. Accurate determination of continuously altering activation energy, which takes place during the transformation of conduction mechanisms, was proposed by numerical differentiation of the Arrhenius plot. With increase of boron doping level the gradual decreasing of capture cross section from 3 × 10{sup −13} down to 2 × 10{sup −17} cm{sup 2} was noticed. Moreover, for the hopping conduction the capture cross section becomes 4 orders of magnitude less (∼2 × 10{sup −20} cm{sup 2}). At T > T{sub room} in doped samples the birth of the second conductance peak was observed. We attribute it to a defect, related to the boron doping of the material.

  18. In/extrinsic granularity in superconducting boron-doped diamond

    Energy Technology Data Exchange (ETDEWEB)

    Willems, B.L. [INPAC - Institute for Nanoscale Physics and Chemistry, Katholieke Universiteit Leuven, Celestijnenlaan 200D, B - 3001 Leuven (Belgium); Facultad de Ciencias Fisicas, Universidad Nacional Mayor de San Marcos, P.O. 14-0149, Lima-14 (Peru); Zhang, G. [INPAC - Institute for Nanoscale Physics and Chemistry, Katholieke Universiteit Leuven, Celestijnenlaan 200D, B - 3001 Leuven (Belgium); Vanacken, J., E-mail: johan.vanacken@fys.kuleuven.b [INPAC - Institute for Nanoscale Physics and Chemistry, Katholieke Universiteit Leuven, Celestijnenlaan 200D, B - 3001 Leuven (Belgium); Moshchalkov, V.V. [INPAC - Institute for Nanoscale Physics and Chemistry, Katholieke Universiteit Leuven, Celestijnenlaan 200D, B - 3001 Leuven (Belgium); Guillamon, I.; Suderow, H.; Vieira, S. [Laboratorio de Bajas Temperaturas, Departamento de Fisica de la Materia Condensada, Universidad Autonoma de Madrid (Spain); Janssens, S.D. [Hasselt University, Institute for Materials Research, Wetenschapspark 1, B-3590 Diepenbeek (Belgium); Haenen, K.; Wagner, P. [Hasselt University, Institute for Materials Research, Wetenschapspark 1, B-3590 Diepenbeek (Belgium); Division IMOMEC, IMEC vzw, Wetenschapspark 1, B-3590 Diepenbeek (Belgium)

    2010-10-01

    When charge carriers are introduced in diamond, e.g. by chemical doping with Boron (B), the C{sub 1-x}B{sub x} diamond:B can exhibit an insulator-to-metal transition (p{sub Mott{approx}}2x10{sup 20}cm{sup -3}). Under even heavier boron doping (n{sub B{approx}}10{sup 21}cm{sup -3}), diamond becomes superconducting. Using microwave plasma-assisted chemical vapor deposition (MPCVD) we have prepared diamond:B thin films with critical offset temperatures T{sub C} below 3 K. We have investigated the transport properties of these diamond:B thin films, which show pronounced granular effects. It turns out, that this granularity is both intrinsic as well as extrinsic. The extrinsic granularity is the effect of the growth method which needs to start from a seeding of the substrate with detonation nanodiamond, which acts as nucleation centers for further MPCVD growth of the film. In using SPM/STM techniques, we also observed intrinsic granularity, meaning that within physical grains, we observe also a strong intragrain modulation of the order parameter. As a consequence of these granularities, the transport properties show evidence of (i) strong superconducting fluctuations and (ii) Cooper pair tunneling and/or quasiparticle tunneling. The latter effects explain the observed negative magnetoresistance.

  19. Boron-Doped Diamond Electrode in Sodium Sulphate Medium

    Directory of Open Access Journals (Sweden)

    Codruţa Cofan

    2011-01-01

    Full Text Available Differential pulse voltammetry (DPV and chronoamperometry (CA were used to detect and determine acetylsalicylic acid (ASA at a mildly oxidized boron-doped diamond (BDD electrode in a neutral sodium sulphate solution as supporting electrolyte. ASA determination in unbuffered medium was achieved using neutralized standard and real samples. Over the concentration range of 0.01 mM–0.1 mM, linear calibration plots of anodic current peaks in DPV and anodic currents in CA experiments versus concentration were obtained with very high correlation coefficients and good sensitivity values. The limits of detection were situated around 1 μM. The association of DPV and CA techniques with standard addition method represented a suitable option for the determination of ASA in real samples such as pharmaceutical formulations.

  20. Elastic and mechanical softening in boron-doped diamond

    Science.gov (United States)

    Liu, Xiaobing; Chang, Yun-Yuan; Tkachev, Sergey N.; Bina, Craig R.; Jacobsen, Steven D.

    2017-01-01

    Alternative approaches to evaluating the hardness and elastic properties of materials exhibiting physical properties comparable to pure diamond have recently become necessary. The classic linear relationship between shear modulus (G) and Vickers hardness (HV), along with more recent non-linear formulations based on Pugh’s modulus extending into the superhard region (HV > 40 GPa) have guided synthesis and identification of novel superabrasives. These schemes rely on accurately quantifying HV of diamond-like materials approaching or potentially exceeding the hardness of the diamond indenter, leading to debate about methodology and the very definition of hardness. Elasticity measurements on such materials are equally challenging. Here we used a high-precision, GHz-ultrasonic interferometer in conjunction with a newly developed optical contact micrometer and 3D optical microscopy of indentations to evaluate elasticity-hardness relations in the ultrahard range (HV > 80 GPa) by examining single-crystal boron-doped diamond (BDD) with boron contents ranging from 50–3000 ppm. We observe a drastic elastic-mechanical softening in highly doped BDD relative to the trends observed for superhard materials, providing insight into elasticity-hardness relations for ultrahard materials. PMID:28233808

  1. Elastic and mechanical softening in boron-doped diamond.

    Science.gov (United States)

    Liu, Xiaobing; Chang, Yun-Yuan; Tkachev, Sergey N; Bina, Craig R; Jacobsen, Steven D

    2017-02-24

    Alternative approaches to evaluating the hardness and elastic properties of materials exhibiting physical properties comparable to pure diamond have recently become necessary. The classic linear relationship between shear modulus (G) and Vickers hardness (HV), along with more recent non-linear formulations based on Pugh's modulus extending into the superhard region (HV > 40 GPa) have guided synthesis and identification of novel superabrasives. These schemes rely on accurately quantifying HV of diamond-like materials approaching or potentially exceeding the hardness of the diamond indenter, leading to debate about methodology and the very definition of hardness. Elasticity measurements on such materials are equally challenging. Here we used a high-precision, GHz-ultrasonic interferometer in conjunction with a newly developed optical contact micrometer and 3D optical microscopy of indentations to evaluate elasticity-hardness relations in the ultrahard range (HV > 80 GPa) by examining single-crystal boron-doped diamond (BDD) with boron contents ranging from 50-3000 ppm. We observe a drastic elastic-mechanical softening in highly doped BDD relative to the trends observed for superhard materials, providing insight into elasticity-hardness relations for ultrahard materials.

  2. Elastic and mechanical softening in boron-doped diamond

    Science.gov (United States)

    Liu, Xiaobing; Chang, Yun-Yuan; Tkachev, Sergey N.; Bina, Craig R.; Jacobsen, Steven D.

    2017-02-01

    Alternative approaches to evaluating the hardness and elastic properties of materials exhibiting physical properties comparable to pure diamond have recently become necessary. The classic linear relationship between shear modulus (G) and Vickers hardness (HV), along with more recent non-linear formulations based on Pugh’s modulus extending into the superhard region (HV > 40 GPa) have guided synthesis and identification of novel superabrasives. These schemes rely on accurately quantifying HV of diamond-like materials approaching or potentially exceeding the hardness of the diamond indenter, leading to debate about methodology and the very definition of hardness. Elasticity measurements on such materials are equally challenging. Here we used a high-precision, GHz-ultrasonic interferometer in conjunction with a newly developed optical contact micrometer and 3D optical microscopy of indentations to evaluate elasticity-hardness relations in the ultrahard range (HV > 80 GPa) by examining single-crystal boron-doped diamond (BDD) with boron contents ranging from 50–3000 ppm. We observe a drastic elastic-mechanical softening in highly doped BDD relative to the trends observed for superhard materials, providing insight into elasticity-hardness relations for ultrahard materials.

  3. Thermal diffusion boron doping of single-crystal natural diamond

    Science.gov (United States)

    Seo, Jung-Hun; Wu, Henry; Mikael, Solomon; Mi, Hongyi; Blanchard, James P.; Venkataramanan, Giri; Zhou, Weidong; Gong, Shaoqin; Morgan, Dane; Ma, Zhenqiang

    2016-05-01

    With the best overall electronic and thermal properties, single crystal diamond (SCD) is the extreme wide bandgap material that is expected to revolutionize power electronics and radio-frequency electronics in the future. However, turning SCD into useful semiconductors requires overcoming doping challenges, as conventional substitutional doping techniques, such as thermal diffusion and ion implantation, are not easily applicable to SCD. Here we report a simple and easily accessible doping strategy demonstrating that electrically activated, substitutional doping in SCD without inducing graphitization transition or lattice damage can be readily realized with thermal diffusion at relatively low temperatures by using heavily doped Si nanomembranes as a unique dopant carrying medium. Atomistic simulations elucidate a vacancy exchange boron doping mechanism that occurs at the bonded interface between Si and diamond. We further demonstrate selectively doped high voltage diodes and half-wave rectifier circuits using such doped SCD. Our new doping strategy has established a reachable path toward using SCDs for future high voltage power conversion systems and for other novel diamond based electronic devices. The novel doping mechanism may find its critical use in other wide bandgap semiconductors.

  4. Nucleosides and ODN electrochemical detection onto boron doped diamond electrodes.

    Science.gov (United States)

    Fortin, Elodie; Chane-Tune, Jérôme; Mailley, Pascal; Szunerits, Sabine; Marcus, Bernadette; Petit, Jean-Pierre; Mermoux, Michel; Vieil, Eric

    2004-06-01

    Boron doped diamond (BDD) is a promising material for electroanalytical chemistry due mainly to its chemical stability, its high electrical conductivity and to the large amplitude of its electroactive window in aqueous media. The latter feature allowed us to study the direct oxidation of the two electroactive nucleosides, guanosine and adenosine. The BDD electrode was first activated by applying high oxidizing potentials, allowing to increase anodically its working potential window through the oxidation of CH surface groups into hydroxyl and carbonyl terminations. Guanosine (1.2 V vs. Ag/AgCl) and adenosine (1.5 V vs. Ag/AgCl) could then be detected electrochemically with an acceptable signal to noise ratio. The electrochemical signature of each oxidizable base was assessed using differential pulse voltammetry (DPV), in solutions containing one or both nucleosides. These experiments pointed out the existence of adsorption phenomena of the oxidized products onto the diamond surface. Scanning electrochemical microscopy (SECM) was used to investigate these adsorption effects at the microscopic scale. The usefulness of BDD electrodes for the direct electrochemical detection of synthetic oligonucleotides is also evidenced.

  5. Synthesis of Boron-doped Diamond/Porous Ti Composite Materials——Effect of Carbon Concentration

    Institute of Scientific and Technical Information of China (English)

    MA Ming; CHANG Ming; LI Xiaowei

    2012-01-01

    Highly boron-doped diamond films were deposited on porous titanium substrates by hot filament chemical vapor deposition technique.The morphology variation of highly boron-doped diamond films grown on porous titanium substrates was investigated,and the effects of carbon concentration on nucleation density and diamond growth were also studied.The continuous change of surface morphology and structure of diamond film were characterized by scanning electron microscopy.The structures of diamond film and interlayer were analyzed by X-ray diffraction.The quality of boron-doped diamond film was confirmed by visible Raman spectroscopy.The experimental results reveal that surface morphology and quality of boron-doped diamond films are various due to the change of carbon concentration.The thickness of intermediate layer decreases with the carbon concentration increasing.

  6. Properties of boron-doped epitaxial diamond layers grown on (110) oriented single crystal substrates

    OpenAIRE

    Mortet, Vincent; Pernot, J.; Jomard, F.; Soltani, A; Remes, Zdenek; Barjon, Julien; D'Haen, J; Haenen, Ken

    2015-01-01

    Boron doped diamond layers have been grown on (110) single crystal diamond substrates with B/C ratios up to 20 ppm in the gas phase. The surface of the diamond layers observed by scanning electron microscopy consists of (100) and (113) micro-facets. Fourier Transform Photocurrent Spectroscopy indicates substitutional boron incorporation. Electrical properties were measured using Hall effect from 150 to 1000 K. Secondary ion mass spectrometry analyses are consistent with the high incorporation...

  7. Structure and superconductivity of isotope-enriched boron-doped diamond

    Directory of Open Access Journals (Sweden)

    Evgeny A Ekimov, Vladimir A Sidorov, Andrey V Zoteev, Yury B Lebed, Joe D Thompson and Sergey M Stishov

    2008-01-01

    Full Text Available Superconducting boron-doped diamond samples were synthesized with isotopes of 10B, 11B, 13C and 12C. We claim the presence of a carbon isotope effect on the superconducting transition temperature, which supports the 'diamond-carbon'-related nature of superconductivity and the importance of the electron–phonon interaction as the mechanism of superconductivity in diamond. Isotope substitution permits us to relate almost all bands in the Raman spectra of heavily boron-doped diamond to the vibrations of carbon atoms. The 500 cm−1 Raman band shifts with either carbon or boron isotope substitution and may be associated with vibrations of paired or clustered boron. The absence of a superconducting transition (down to 1.6 K in diamonds synthesized in the Co–C–B system at 1900 K correlates with the small boron concentration deduced from lattice parameters.

  8. Voltammetric determination of wedelolactone, an anti-HIV herbal drug, at boron-doped diamond electrode

    Indian Academy of Sciences (India)

    Sachin Saxena; Ratnanjali Shrivastava; Soami P Satsangee

    2015-05-01

    Boron-doped diamond electrode has been utilized for the study of electrochemical behaviour of an anti-HIV herbal drug wedelolactone in Britton-Robinson buffer (pH-2.5) by square-wave and cyclic voltammetry techniques. The response characteristics of cyclic voltammetry and square wave voltammetry showed a remarkable increase in the anodic peak current and electrochemical impedance spectroscopy revealed a lowering in charge transfer resistance at the boron-doped diamond electrode as compared to the glassy carbon electrode that can be attributed to the higher sensitivity of boron-doped diamond sensor. Cyclic voltammetry at the boron-doped diamond surface revealed the oxidation of wedelolactone with two oxidation peaks (P1 and P2) with Ep1 = 0.4V and Ep2 =1.00 V with scan rate varying from 10 - 220 mV/s and exhibits diffusion-controlled process. Based on the electrochemical measurements, a probable oxidation mechanism has been deduced and the electrode dynamics parameters have been evaluated. The effect of concentration on the peak currents of wedelolactone was found to have a linear relationship within the concentration range of 50–700 ng/mL. The LOD and LOQ were found to be 43.87 and 132.93 ng/mL respectively. The applicability of the proposed method was further scrutinized by the successful determination of wedelolactone in real plant samples.

  9. Thermal shock resistance of thick boron-doped diamond under extreme heat loads

    NARCIS (Netherlands)

    De Temmerman, G.; Dodson, J.; Linke, J.; Lisgo, S.; Pintsuk, G.; Porro, S.; Scarsbrook, G.

    2011-01-01

    Thick free-standing boron-doped diamonds were prepared by microwave plasma assisted chemical vapour deposition. Samples with a final thickness close to 5 mm and with lateral dimensions 25 x 25 mm were produced. The thermal shock resistance of the material was tested by exposure in the JUDITH electro

  10. Boron-Doped Diamond Electrodes for the Electrochemical Oxidation and Cleavage of Peptides

    NARCIS (Netherlands)

    Roeser, Julien; Alting, Niels F. A.; Permentier, Hjalmar P.; Bruins, Andries P.; Bischoff, Rainer

    2013-01-01

    Electrochemical oxidation of peptides and proteins is traditionally performed on carbon-based electrodes. Adsorption caused by the affinity of hydrophobic and aromatic amino acids toward these surfaces leads to electrode fouling. We compared the performance of boron-doped diamond (BDD) and glassy ca

  11. Electroanalysis of tetracycline using nickel-implanted boron-doped diamond thin film electrode applied to flow injection system.

    Science.gov (United States)

    Treetepvijit, Surudee; Chuanuwatanakul, Suchada; Einaga, Yasuaki; Sato, Rika; Chailapakult, Orawon

    2005-05-01

    The electrochemical analysis of tetracycline was investigated using nickel-implanted boron-doped diamond thin film electrode by cyclic voltammetry and amperometry with a flow injection system. Cyclic voltammetry was used to study the electrochemical oxidation of tetracycline. Comparison experiments were carried out using as-deposited boron-doped diamond thin film electrode (BDD). Nickel-implanted boron-doped diamond thin film electrode (Ni-DIA) provided well-resolved oxidation irreversible cyclic voltammograms. The current signals were higher than those obtained using the as-deposited BDD electrode. Results using nickel-implanted boron-doped diamond thin film electrode in flow injection system coupled with amperometric detection are presented. The optimum potential for tetracycline was 1.55 V versus Ag/AgCl. The linear range of 1.0 to 100 microM and the detection limit of 10 nM were obtained. In addition, the application for drug formulation was also investigated.

  12. Synthesis and characterization of p-type boron-doped IIb diamond large single crystals

    Institute of Scientific and Technical Information of China (English)

    Li Shang-Sheng; Ma Hong-An; Li Xiao-Lei; Su Tai-Chao; Huang Guo-Feng; Li Yong; Jia Xiao-Peng

    2011-01-01

    High-quality p-type boron-doped II0b diamond large single crystals are successfully synthesized by the temperature gradient method in a china-type cubic anvil high-pressure apparatus at about 5.5 GPa and 1600 K. The morphologies and surface textures of the synthetic diamond crystals with different boron additive quantities are characterized by using an optical microscope and a scanning electron microscope respectively. The impurities of nitrogen and boron in diamonds are detected by micro Fourier transform infrared technique. The electrical properties including resistivities, Hall coefficients, Hall mobilities and carrier densities of the synthesized samples are measured by a four-point probe and the Hall effect method. The results show that large p-type boron-doped diamond single crystals with few nitrogen impurities have been synthesized. With the increase of quantity of additive boron, some high-index crystal faces such as {113} gradually disappear, and some stripes and triangle pits occur on the crystal surface. This work is helpful for the further research and application of boron-doped semiconductor diamond.

  13. Preparation of grain size controlled boron-doped diamond thin films and their applications in selective detection of glucose in basic solutions

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    Boron-doped diamond (BDD) thin films with different crystal grain sizes were prepared by controlling the reacting gas pressure using hot filament chemical vapor deposition (HFCVD).The morphologies and structures of the prepared diamond thin films were characterized by scanning electron microscopy (SEM) and Raman spectroscopy.The electrochemical responses of K4Fe(CN)6 on different BDD electrodes were investigated.The results suggested that electron transfer was faster at the boron-doped nanocrystalline diamond (BDND) thin film electrodes in comparison with that at other BDD thin film electrodes.The prepared BDD thin film electrodes without any modification were used to directly detect glucose in the basic solution.The results showed that the as-prepared BDD thin film electrodes exhibited good selectivity for detecting glucose in the presence of ascorbic acid (AA) and uric acid (UA).The higher sensitivity was observed on the BDND thin film grown on the boron-doped microcrystalline diamond (BDMD) thin film surface,and the linear response range,sensitivity and the low detection limit were 0.25–10 mM,189.1 μA mmol-1 cm-2 and 25 μM (S/N=3) for glucose in the presence of AA and UA,respectively.

  14. Electrochemical Incineration of Phenolic Compounds from the Hydrocarbon Industry Using Boron-Doped Diamond Electrodes

    OpenAIRE

    Alejandro Medel; Erika Bustos; Karen Esquivel; Godínez, Luis A.; Yunny Meas

    2012-01-01

    Electrochemical incineration using boron-doped diamond electrodes was applied to samples obtained from a refinery and compared to the photo-electro-Fenton process in order to selectively eliminate the phenol and phenolic compounds from a complex matrix. Due to the complex chemical composition of the sample, a pretreatment to the sample in order to isolate the phenolic compounds was applied. The effects of the pretreatment and of pH on the degradation of the phenolic compounds were evaluated. ...

  15. Modeling and simulation of boron-doped nanocrystalline silicon carbide thin film by a field theory.

    Science.gov (United States)

    Xiong, Liming; Chen, Youping; Lee, James D

    2009-02-01

    This paper presents the application of a multiscale field theory in modeling and simulation of boron-doped nanocrystalline silicon carbide (B-SiC). The multiscale field theory was briefly introduced. Based on the field theory, numerical simulations show that intergranular glassy amorphous films (IGFs) and nano-sized pores exist in triple junctions of the grains for nanocrystalline B-SiC. Residual tensile stress in the SiC grains and compressive stress on the grain boundaries (GBs) were observed. Under tensile loading, it has been found that mechanical response of 5 wt% boron-SiC exhibits five characteristic regimes. Deformation mechanism at atomic scale has been revealed. Tensile strength and Young's modulus of nanocrystalline SiC were accurately reproduced.

  16. Metal-insulator transition and superconductivity in heavily boron-doped diamond and related materials

    Energy Technology Data Exchange (ETDEWEB)

    Achatz, Philipp

    2009-05-15

    During this PhD project, the metal-insulator transition and superconductivity of highly boron-doped single crystal diamond and related materials have been investigated. The critical boron concentration n{sub c} for the metal-insulator transition was found to be the same as for the normal-superconductor transition. All metallic samples have been found to be superconducting and we were able to link the occurence of superconductivity to the proximity to the metal-insulator transition. For this purpose, a scaling law approach based on low temperature transport was proposed. Furthermore, we tried to study the nature of the superconductivity in highly boron doped single crystal diamond. Raman spectroscopy measurements on the isotopically substituted series suggest that the feature occuring at low wavenumbers ({approx} 500 cm{sup -1}) is the A1g vibrational mode associated with boron dimers. Usual Hall effect measurements yielded a puzzling situation in metallic boron-doped diamond samples, leading to carrier concentrations up to a factor 10 higher than the boron concentration determined by secondary ion mass spectroscopy (SIMS). The low temperature transport follows the one expected for a granular metal or insulator, depending on the interplay of intergranular and intragranular (tunneling) conductance. The metal-insulator transition takes place at a critical conductance g{sub c}. The granularity also influences significantly the superconducting properties by introducing the superconducting gap {delta} in the grain and Josephson coupling J between superconducting grains. A peak in magnetoresistance is observed which can be explained by superconducting fluctuations and the granularity of the system. Additionally we studied the low temperature transport of boron-doped Si samples grown by gas immersion laser doping, some of which yielded a superconducting transition at very low temperatures. Furthermore, preliminary results on the LO-phonon-plasmon coupling are shown for the

  17. Boron doped diamond electrode for the wastewater treatment

    Energy Technology Data Exchange (ETDEWEB)

    Quiroz Alfaro, Marco Antonio [Universidad de las Americas-Puebla, Santa Catarina Martir (Mexico). Escuela de Ciencias. Dept. de Quimica y Biologia; Ferro, Sergio; Martinez-Huitle, Carlos Alberto [University of Ferrara (Italy). Dept. of Chemistry; Vong, Yunny Meas [Centro de Investigacion y Desarrollo Tecnologico en Electroquimica S.C., Quertaro (Mexico). Parque Tecnologico Queretaro Sanfandila

    2006-03-15

    Electrochemical studies of diamond were started more than fifteen years ago with the first paper on diamond electrochemistry published by Pleskov. After that, work started in Japan, United States of America, France, Switzerland and other countries. Over the last few years, the number of publications has increased considerably. Diamond films have been the subject of applications and fundamental research in electrochemistry, opening up a new branch known as the electrochemistry of diamond electrodes. Here, we first present a brief history and the process of diamond film synthesis. The principal objective of this work is to summarize the most important results in the electrochemical oxidation using diamond electrodes. (author)

  18. Critical boron-doping levels for generation of dislocations in synthetic diamond

    Energy Technology Data Exchange (ETDEWEB)

    Alegre, M. P., E-mail: maripaz.alegre@uca.es; Araújo, D.; Pinero, J. C.; Lloret, F.; Villar, M. P. [Departamento de Ciencias de los Materiales e Ingeniería Metalúrgica y Química, Universidad de Cádiz, 11510 Puerto Real, Cádiz (Spain); Fiori, A.; Achatz, P.; Chicot, G.; Bustarret, E. [Université Grenoble Alpes, Institut NEEL, 25 av. des Martyrs, 38042 Grenoble (France); Jomard, F. [GEMaC, CNRS and Université de Versailles St Quentin, 45 Avenue des États-Unis, 78035 Versailles (France)

    2014-10-27

    Defects induced by boron doping in diamond layers were studied by transmission electron microscopy. The existence of a critical boron doping level above which defects are generated is reported. This level is found to be dependent on the CH{sub 4}/H{sub 2} molar ratios and on growth directions. The critical boron concentration lied in the 6.5–17.0 × 10{sup 20}at/cm{sup 3} range in the 〈111〉 direction and at 3.2 × 10{sup 21 }at/cm{sup 3} for the 〈001〉 one. Strain related effects induced by the doping are shown not to be responsible. From the location of dislocations and their Burger vectors, a model is proposed, together with their generation mechanism.

  19. Raman scattering in heavily boron-doped single-crystal diamond

    Directory of Open Access Journals (Sweden)

    G. Faggio

    2011-09-01

    Full Text Available A series of boron-doped homoepitaxial diamond films grown by Microwave Plasma Enhanced Chemical Vapor Deposition at the University of Rome "Tor Vergata" have been investigated with Raman spectroscopy. As the boron content increases, we observed systematic modifications in the Raman spectra of single-crystal diamonds. A significant change in the lineshape of the first-order Raman peak as well as a wide and structured signal at lower wavenumbers appeared simultaneously in samples grown at higher boron content.

  20. Laser-excited photoemission spectroscopy study of superconducting boron-doped diamond

    Directory of Open Access Journals (Sweden)

    K. Ishizaka, R. Eguchi, S. Tsuda, T. Kiss, T. Shimojima, T. Yokoya, S. Shin, T. Togashi, S. Watanabe, C.-T. Chen, C.Q. Zhang, Y. Takano, M. Nagao, I. Sakaguchi, T. Takenouchi and H. Kawarada

    2006-01-01

    Full Text Available We have investigated the low-energy electronic state of boron-doped diamond thin film by the laser-excited photoemission spectroscopy. A clear Fermi-edge is observed for samples doped above the semiconductor–metal boundary, together with the characteristic structures at 150×n meV possibly due to the strong electron–lattice coupling effect. In addition, for the superconducting sample, we observed a shift of the leading edge below Tc indicative of a superconducting gap opening. We discuss the electron–lattice coupling and the superconductivity in doped diamond.

  1. Technology for boron-doped layers formation on the diamond

    Directory of Open Access Journals (Sweden)

    Zyablyuk K. N.

    2012-10-01

    Full Text Available The authors investigated natural type IIa diamond crystals and CVD diamond films. The article presents electrophysical parameters of the structures obtained in different modes of ion implantation of boron into the crystal with further annealing. Parameters of the crystals with a high nitrogen impurity density indicate that they can be used for the manufacture of microwave field-effect transistors operating at room temperature. CVD diamond films doped with boron during the growth process also have the required for MOSFET manufacture carrier mobility. However, due to the high activation energy of boron, the required channel conductivity is achieved at high operating temperatures.

  2. 11B-NMR study in boron-doped diamond films

    Directory of Open Access Journals (Sweden)

    H. Mukuda, T. Tsuchida, A. Harada, Y. Kitaoka, T. Takenouchi, Y. Takano, M. Nagao, I. Sakaguchi and H. Kawarada

    2006-01-01

    Full Text Available We have investigated an origin of the superconductivity discovered in boron (B-doped diamonds by means of 11B-NMR on heteroepitaxially grown (1 1 1 and (1 0 0 films and polycrystalline film. The characteristic difference of B-NMR spectral shape for the (1 1 1 and (1 0 0 thin films is demonstrated as arising from the difference in the concentration (nB(1 of boron substituted for carbon. It is revealed from a scaling between a superconducting transition temperature Tc and nB(1 that the holes doped into diamond via the substitution of boron for carbon are responsible for the onset of superconductivity. The result suggests that the superconductivity in boron-doped diamond is mediated by the electron–phonon interaction brought about a high Debye temperature ~1860 K characteristic for the diamond structure.

  3. Friction and Wear Performance of Boron Doped, Undoped Microcrystalline and Fine Grained Composite Diamond Films

    Institute of Scientific and Technical Information of China (English)

    WANG Xinchang; WANG Liang; SHEN Bin; SUN Fanghong

    2015-01-01

    Chemical vapor deposition (CVD) diamond films have attracted more attentions due to their excellent mechanical properties. Whereas as-fabricated traditional diamond films in the previous studies don’t have enough adhesion or surface smoothness, which seriously impact their friction and wear performance, and thus limit their applications under extremely harsh conditions. A boron doped, undoped microcrystalline and fine grained composite diamond (BD-UM-FGCD) film is fabricated by a three-step method adopting hot filament CVD (HFCVD) method in the present study, presenting outstanding comprehensive performance, including the good adhesion between the substrate and the underlying boron doped diamond (BDD) layer, the extremely high hardness of the middle undoped microcrystalline diamond (UMCD) layer, as well as the low surface roughness and favorable polished convenience of the surface fine grained diamond (FGD) layer. The friction and wear behavior of this composite film sliding against low-carbon steel and silicon nitride balls are studied on a ball-on-plate rotational friction tester. Besides, its wear rate is further evaluated under a severer condition using an inner-hole polishing apparatus, with low-carbon steel wire as the counterpart. The test results show that the BD-UM-FGCD film performs very small friction coefficient and great friction behavior owing to its high surface smoothness, and meanwhile it also has excellent wear resistance because of the relatively high hardness of the surface FGD film and the extremely high hardness of the middle UMCD film. Moreover, under the industrial conditions for producing low-carbon steel wires, this composite film can sufficiently prolong the working lifetime of the drawing dies and improve their application effects. This research develops a novel composite diamond films owning great comprehensive properties, which have great potentials as protecting coatings on working surfaces of the wear-resistant and anti

  4. Friction and wear performance of boron doped, undoped microcrystalline and fine grained composite diamond films

    Science.gov (United States)

    Wang, Xinchang; Wang, Liang; Shen, Bin; Sun, Fanghong

    2015-01-01

    Chemical vapor deposition (CVD) diamond films have attracted more attentions due to their excellent mechanical properties. Whereas as-fabricated traditional diamond films in the previous studies don't have enough adhesion or surface smoothness, which seriously impact their friction and wear performance, and thus limit their applications under extremely harsh conditions. A boron doped, undoped microcrystalline and fine grained composite diamond (BD-UM-FGCD) film is fabricated by a three-step method adopting hot filament CVD (HFCVD) method in the present study, presenting outstanding comprehensive performance, including the good adhesion between the substrate and the underlying boron doped diamond (BDD) layer, the extremely high hardness of the middle undoped microcrystalline diamond (UMCD) layer, as well as the low surface roughness and favorable polished convenience of the surface fine grained diamond (FGD) layer. The friction and wear behavior of this composite film sliding against low-carbon steel and silicon nitride balls are studied on a ball-on-plate rotational friction tester. Besides, its wear rate is further evaluated under a severer condition using an inner-hole polishing apparatus, with low-carbon steel wire as the counterpart. The test results show that the BD-UM-FGCD film performs very small friction coefficient and great friction behavior owing to its high surface smoothness, and meanwhile it also has excellent wear resistance because of the relatively high hardness of the surface FGD film and the extremely high hardness of the middle UMCD film. Moreover, under the industrial conditions for producing low-carbon steel wires, this composite film can sufficiently prolong the working lifetime of the drawing dies and improve their application effects. This research develops a novel composite diamond films owning great comprehensive properties, which have great potentials as protecting coatings on working surfaces of the wear-resistant and anti

  5. Influence of boron doping on mechanical and tribological properties in multilayer CVD-diamond coating systems

    Indian Academy of Sciences (India)

    SAJAD HUSSAIN DIN; M A SHAH; N A SHEIKH; K A NAJAR; K RAMASUBRAMANIAN; S BALAJI; M S RAMACHANDRA RAO

    2016-12-01

    Titanium alloy (Ti6Al4V) substrates were deposited with smooth multilayer coatings, by hot filament chemical vapour deposition technique. The effect of boron doping on lattice parameter, residual stresses, hardness and coefficient of friction in multilayer-diamond coating system was studied. The frictional behaviour of the coatings was studied using a ball-on-disc micro-tribometer by sliding the coated samples of titanium alloy (Ti6Al4V) substrates against alumina (Al$_2$O$_3$) balls, and increasing normal load from 1 to 10N. The average friction coefficient decreased from 0.36 to 0.29 for undoped multilayer-diamond coating system and from 0.33 to 0.18 for borondoped (BD) multilayer-diamond coating system. The average indentation depths for undoped and BD multilayerdiamond coating systems were found to be equal to $\\sim$58 and $\\sim$65 nm, respectively, and their hardness values were 60 and 55~GPa, respectively.

  6. Soft X-ray angle-resolved photoemission spectroscopy of heavily boron-doped superconducting diamond films

    Directory of Open Access Journals (Sweden)

    T. Yokoya, T. Nakamura, T. Matushita, T. Muro, H. Okazaki, M. Arita, K. Shimada, H. Namatame, M. Taniguchi, Y. Takano, M. Nagao, T. Takenouchi, H. Kawarada and T. Oguchi

    2006-01-01

    Full Text Available We have performed soft X-ray angle-resolved photoemission spectroscopy (SXARPES of microwave plasma-assisted chemical vapor deposition diamond films with different B concentrations in order to study the origin of the metallic behavior of superconducting diamond. SXARPES results clearly show valence band dispersions with a bandwidth of ~23 eV and with a top of the valence band at gamma point in the Brillouin zone, which are consistent with the calculated valence band dispersions of pure diamond. Boron concentration-dependent band dispersions near the Fermi level (EF exhibit a systematic shift of EF, indicating depopulation of electrons due to hole doping. These SXARPES results indicate that diamond bands retain for heavy boron doping and holes in the diamond band are responsible for the metallic states leading to superconductivity at low temperature. A high-resolution photoemission spectroscopy spectrum near EF of a heavily boron-doped diamond superconductor is also presented.

  7. Electrochemical Incineration of Phenolic Compounds from the Hydrocarbon Industry Using Boron-Doped Diamond Electrodes

    Directory of Open Access Journals (Sweden)

    Alejandro Medel

    2012-01-01

    Full Text Available Electrochemical incineration using boron-doped diamond electrodes was applied to samples obtained from a refinery and compared to the photo-electro-Fenton process in order to selectively eliminate the phenol and phenolic compounds from a complex matrix. Due to the complex chemical composition of the sample, a pretreatment to the sample in order to isolate the phenolic compounds was applied. The effects of the pretreatment and of pH on the degradation of the phenolic compounds were evaluated. The results indicate that the use of a boron-doped diamond electrode in an electrochemical incineration process mineralizes 99.5% of the phenolic sample content. Working in acidic medium (pH = 1, and applying 2 A at 298 K under constant stirring for 2 hours, also results in the incineration of the reaction intermediates reflected by 97% removal of TOC. In contrast, the photo-electro-Fenton process results in 99.9% oxidation of phenolic compounds with only a 25.69% removal of TOC.

  8. Effect of Boron-Doped Diamond Interlayer on Cutting Performance of Diamond Coated Micro Drills for Graphite Machining

    Directory of Open Access Journals (Sweden)

    Zhiming Zhang

    2013-07-01

    Full Text Available Thin boron doped diamond (BDD film is deposited from trimethyl borate/acetone/hydrogen mixture on Co-cemented tungsten carbide (WC-Co micro drills by using the hot filament chemical vapor deposition (HFCVD technique. The boron peak on Raman spectrum confirms the boron incorporation in diamond film. This film is used as an interlayer for subsequent CVD of micro-crystalline diamond (MCD film. The Rockwell indentation test shows that boron doping could effectively improve the adhesive strength on substrate of as deposited thin diamond films. Dry drilling of graphite is chosen to check the multilayer (BDD + MCD film performance. For the sake of comparison, machining tests are also carried out under identical conditions using BDD and MCD coated micro drills with no interlayer. The wear mechanism of the tools has been identified and correlated with the criterion used to evaluate the tool life. The results show that the multilayer (BDD + MCD coated micro drill exhibits the longest tool life. Therefore, thin BDD interlayer is proved to be a new viable alternative and a suitable option for adherent diamond coatings on micro cutting tools.

  9. Effects of the surface-adsorption of boron-doped diamond electrode on its electrochemical behavior

    Institute of Scientific and Technical Information of China (English)

    LIU Fengbin; LI Xuemin; WANG Jiadao; LIU Bing; CHEN Darong

    2006-01-01

    To elucidate the effects of the hydro- genation and oxygenation of the boron-doped diamond (BDD) electrode on its electrochemical behaviors, the surface morphologies and phases of the two surface-adsorption BDD films have been investigated and the cyclic voltammograms and AC impedance spectra have been measured at these two BDD electrodes. The results indicate that compared with the hydrogen-adsorption BDD film, oxygen-adsor- ption BDD film is less conductive, and has a larger surface roughness and a lower sp3/sp2 ratio. The oxygenated BDD film electrode possesses a wider electrochemical window, larger diamond film resistance and capacitance and a larger polarization resistance than hydrogenated BDD electrode. In addition, the effect mechanism of the surface-adsorption of BDD electrode on its electrochemical behaviors has been discussed.

  10. Domestic and Industrial Water Disinfection Using Boron-Doped Diamond Electrodes

    Science.gov (United States)

    Rychen, Philippe; Provent, Christophe; Pupunat, Laurent; Hermant, Nicolas

    This chapter first describes main properties and manufacturing process (production using HF-CVD, quality-control measurements, etc.) of diamond electrodes and more specifically boron-doped diamond (BDD) electrodes. Their exceptional properties make such electrodes particularly suited for many disinfection applications as thanks to their wide working potential window and their high anodic potential, they allow generating a mixture of powerful oxidizing species mainly based on active oxygen and peroxides. Such mixture of disinfecting agents is far more efficient than conventional chemical or physical known techniques. Their efficiency was tested against numerous microorganisms and then proved to be greater than conventional methods. All bacteria and viruses tested up to date were inactivated 3-5 times faster with a treatment based on with BDD electrodes and the DiaCellⓇ technology than with other techniques. Several applications, either industrial or private (wellness and home use), are discussed with a focus on the dedicated products and the main technology advantages.

  11. Benzene Oxidation on Boron-Doped Diamond Electrode: Electrochemical-Impedance Study of Adsorption Effects

    Directory of Open Access Journals (Sweden)

    Yuri Pleskov

    2012-01-01

    Full Text Available Benzene oxidation at a boron-doped diamond anode in 0.5 M K2SO4 aqueous solution is studied by cyclic voltammetry and electrochemical impedance spectroscopy. It is shown by measurements of differential capacitance and anodic current that in the ideal-polarizability potential region benzene either is not adsorbed at the diamond electrode or the benzene adsorption does not affect its capacitance. At more positive potentials, the adsorption of some intermediate of the benzene oxidation occurs at the electrode. The intermediate partially blocks the electrode surface and lowers the anodic current. The very fact of the electrode surface blocking is reflected in the complex-plane presentation of the impedance-potential plots.

  12. ortho-Selective phenol-coupling reaction by anodic treatment on boron-doped diamond electrode using fluorinated alcohols.

    Science.gov (United States)

    Kirste, Axel; Nieger, Martin; Malkowsky, Itamar M; Stecker, Florian; Fischer, Andreas; Waldvogel, Siegfried R

    2009-01-01

    Enlarged scope by fluorinated mediators: Oxyl radicals are easily formed on boron-doped diamond (BDD) electrodes and can be exploited for the ortho-selective coupling to the corresponding biphenols (see scheme). At partial conversion, a clean transformation is achieved that can be applied to electron-rich as well as fluorinated phenols.

  13. Cathodic reductive coupling of methyl cinnamate on boron-doped diamond electrodes and synthesis of new neolignan-type products.

    Science.gov (United States)

    Kojima, Taiki; Obata, Rika; Saito, Tsuyoshi; Einaga, Yasuaki; Nishiyama, Shigeru

    2015-01-01

    The electroreduction reaction of methyl cinnamate on a boron-doped diamond (BDD) electrode was investigated. The hydrodimer, dimethyl 3,4-diphenylhexanedioate (racemate/meso = 74:26), was obtained in 85% yield as the major product, along with small amounts of cyclic methyl 5-oxo-2,3-diphenylcyclopentane-1-carboxylate. Two new neolignan-type products were synthesized from the hydrodimer.

  14. Standard electrochemical behavior of high-quality, boron-doped polycrystalline diamond thin-film electrodes

    Science.gov (United States)

    Granger; Witek; Xu; Wang; Hupert; Hanks; Koppang; Butler; Lucazeau; Mermoux; Strojek; Swain

    2000-08-15

    Standard electrochemical data for high-quality, boron-doped diamond thin-film electrodes are presented. Films from two different sources were compared (NRL and USU) and both were highly conductive, hydrogen-terminated, and polycrystalline. The films are acid washed and hydrogen plasma treated prior to use to remove nondiamond carbon impurity phases and to hydrogen terminate the surface. The boron-doping level of the NRL film was estimated to be in the mid 1019 B/cm3 range, and the boron-doping level of the USU films was approximately 5 x 10(20) B/cm(-3) based on boron nuclear reaction analysis. The electrochemical response was evaluated using Fe-(CN)6(3-/4-), Ru(NH3)6(3+/2+), IrCl6(2-/3-), methyl viologen, dopamine, ascorbic acid, Fe(3+/2+), and chlorpromazine. Comparisons are made between the apparent heterogeneous electron-transfer rate constants, k0(app), observed at these high-quality diamond films and the rate constants reported in the literature for freshly activated glassy carbon. Ru(NH3)6(3+/2+), IrCl6(2-/3-), methyl viologen, and chlorpromazine all involve electron transfer that is insensitive to the diamond surface microstructure and chemistry with k0(app) in the 10(-2)-10(-1) cm/s range. The rate constants are mainly influenced by the electronic properites of the films. Fe(CN)6(3-/4-) undergoes electron transfer that is extremely sensitive to the surface chemistry with k0(app) in the range of 10(-2)-10(-1) cm/s at the hydrogen-terminated surface. An oxygen surface termination severely inhibits the rate of electron transfer. Fe(3+/2+) undergoes slow electron transfer at the hydrogen-terminated surface with k0(app) near 10(-5) cm/s. The rate of electron transfer at sp2 carbon electrodes is known to be mediated by surface carbonyl functionalities; however, this inner-sphere, catalytic pathway is absent on diamond due to the hydrogen termination. Dopamine, like other catechol and catecholamines, undergoes sluggish electron transfer with k0(app) between 10

  15. Chemical Modification of Boron-Doped Diamond Electrodes for Applications to Biosensors and Biosensing.

    Science.gov (United States)

    Svítková, Jana; Ignat, Teodora; Švorc, Ľubomír; Labuda, Ján; Barek, Jiří

    2016-05-03

    Boron-doped diamond (BDD) is a prospective electrode material that possesses many exceptional properties including wide potential window, low noise, low and stable background current, chemical and mechanical stability, good biocompatibility, and last but not least exceptional resistance to passivation. These characteristics extend its usability in various areas of electrochemistry as evidenced by increasing number of published articles over the past two decades. The idea of chemically modifying BDD electrodes with molecular species attached to the surface for the purpose of creating a rational design has found promising applications in the past few years. BDD electrodes have appeared to be excellent substrate materials for various chemical modifications and subsequent application to biosensors and biosensing. Hence, this article presents modification strategies that have extended applications of BDD electrodes in electroanalytical chemistry. Different methods and steps of surface modification of this electrode material for biosensing and construction of biosensors are discussed.

  16. Boron-doped diamond electrode: Preparation, characterization and application for electrocatalytic degradation of m-dinitrobenzene.

    Science.gov (United States)

    Bai, Hongmei; He, Ping; Pan, Jing; Chen, Jingchao; Chen, Yang; Dong, Faqing; Li, Hong

    2017-07-01

    Boron-doped diamond (BDD) electrode was successfully prepared via microwave plasma chemical vapor deposition method and it was used in electrocatalytic degradation of m-dinitrobenzene (m-DNB). The electrocatalytic degradation efficiency of m-DNB was evaluated under different experimental parameters including current density, temperature, pH, Na2SO4 concentration and initial m-DNB concentration. Under optimal parameters, degradation efficiency of m-DNB reached up to 82.7% after 150min. The degradation process of m-DNB was fitted well with pseudo first-order kinetics. Moreover, UV and HPLC analyses implied that m-DNB was totally destroyed and mineralized after 240min degradation, and the proposed mechanism during the electrocatalytic degradation process was analyzed. All these results demonstrated that BDD electrode possessed excellent electrocatalytic property and showed a great potential application in wastewater treatment.

  17. Electrochemical Biosensor Based on Boron-Doped Diamond Electrodes with Modified Surfaces

    Directory of Open Access Journals (Sweden)

    Yuan Yu

    2012-01-01

    Full Text Available Boron-doped diamond (BDD thin films, as one kind of electrode materials, are superior to conventional carbon-based materials including carbon paste, porous carbon, glassy carbon (GC, carbon nanotubes in terms of high stability, wide potential window, low background current, and good biocompatibility. Electrochemical biosensor based on BDD electrodes have attracted extensive interests due to the superior properties of BDD electrodes and the merits of biosensors, such as specificity, sensitivity, and fast response. Electrochemical reactions perform at the interface between electrolyte solutions and the electrodes surfaces, so the surface structures and properties of the BDD electrodes are important for electrochemical detection. In this paper, the recent advances of BDD electrodes with different surfaces including nanostructured surface and chemically modified surface, for the construction of various electrochemical biosensors, were described.

  18. Covalent modification of boron-doped diamond electrodes with an imidazolium-based ionic liquid

    Energy Technology Data Exchange (ETDEWEB)

    Wang Mei [Institut de Recherche Interdisciplinaire (IRI, USR 3078), Parc de la Haute Borne, 50 Avenue de Halley, BP 70478, 59658 Villeneuve d' Ascq (France); Institut d' Electronique, de Microelectronique et de Nanotechnologie (IEMN, UMR 8520), Cite Scientifique, Avenue Poincare, BP 60069, 59652 Villeneuve d' Ascq (France); School of Materials Science and Engineering, Shandong University, 19723 Jingshi Road, Jinan, Shandong Province (China); Schneider, Amene [Austrian Centre of Competence for Tribology, Viktor Kaplan Strasse 2, 2700, Wiener Neustadt (Austria); Niedziolka-Joensson, Joanna; Marcon, Lionel [Institut de Recherche Interdisciplinaire (IRI, USR 3078), Parc de la Haute Borne, 50 Avenue de Halley, BP 70478, 59658 Villeneuve d' Ascq (France); Institut d' Electronique, de Microelectronique et de Nanotechnologie (IEMN, UMR 8520), Cite Scientifique, Avenue Poincare, BP 60069, 59652 Villeneuve d' Ascq (France); Ghodbane, Slimane; Steinmueller-Nethl, Doris [Rho-BeSt Coating GmbH, Exlgasse 20a, 6020 Innsbruck (Austria); Li Musen [School of Materials Science and Engineering, Shandong University, 19723 Jingshi Road, Jinan, Shandong Province (China); Boukherroub, Rabah [Institut de Recherche Interdisciplinaire (IRI, USR 3078), Parc de la Haute Borne, 50 Avenue de Halley, BP 70478, 59658 Villeneuve d' Ascq (France); Institut d' Electronique, de Microelectronique et de Nanotechnologie (IEMN, UMR 8520), Cite Scientifique, Avenue Poincare, BP 60069, 59652 Villeneuve d' Ascq (France); Szunerits, Sabine, E-mail: sabine.szunerits@iri.univ-lille1.f [Institut de Recherche Interdisciplinaire (IRI, USR 3078), Parc de la Haute Borne, 50 Avenue de Halley, BP 70478, 59658 Villeneuve d' Ascq (France); Institut d' Electronique, de Microelectronique et de Nanotechnologie (IEMN, UMR 8520), Cite Scientifique, Avenue Poincare, BP 60069, 59652 Villeneuve d' Ascq (France)

    2010-02-01

    An ionic liquid (IL, 1-(methylcarboxylic acid)-3-octylimidazolium-bis (trifluoromethylsulfonyl)imide) was covalently coupled onto a boron-doped diamond (BDD) surface through an esterification reaction. The resulting surface was characterized by X-ray photoelectron spectroscopy, water contact angle and electrochemical measurements. Selective electron transfer towards positively and negatively charged redox species was recorded. While the presence of Fe(CN){sub 6}{sup 4-} could be detected on the IL-modified BDD interface, no surface-immobilized Ru(NH{sub 3}){sub 6}{sup 3+} was recorded. The IL-modified BDD electrode showed in addition changes in surface wettability when immersed into aqueous solution containing different anions.

  19. Preparation and reactivity of carboxylic acid-terminated boron-doped diamond electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Niedziolka-Joensson, Joanna [Institut de Recherche Interdisciplinaire (IRI, USR 3078), Parc de la Haute Borne, 50 Avenue de Halley, BP 70478, 59658 Villeneuve d' Ascq (France); Institut d' Electronique, de Microelectronique et de Nanotechnologie (IEMN, UMR 8520), Cite Scientifique, Avenue Poincare, BP 60069, 59652 Villeneuve d' Ascq (France); Boland, Susan; Leech, Donal [School of Chemistry, National University of Irland, Galway (Ireland); Boukherroub, Rabah [Institut de Recherche Interdisciplinaire (IRI, USR 3078), Parc de la Haute Borne, 50 Avenue de Halley, BP 70478, 59658 Villeneuve d' Ascq (France); Institut d' Electronique, de Microelectronique et de Nanotechnologie (IEMN, UMR 8520), Cite Scientifique, Avenue Poincare, BP 60069, 59652 Villeneuve d' Ascq (France); Szunerits, Sabine, E-mail: sabine.szunerits@iri.univ-lille1.f [Institut de Recherche Interdisciplinaire (IRI, USR 3078), Parc de la Haute Borne, 50 Avenue de Halley, BP 70478, 59658 Villeneuve d' Ascq (France); Institut d' Electronique, de Microelectronique et de Nanotechnologie (IEMN, UMR 8520), Cite Scientifique, Avenue Poincare, BP 60069, 59652 Villeneuve d' Ascq (France)

    2010-01-01

    The paper reports on the formation of carboxy-terminated boron-doped diamond (BDD) electrodes. The carboxylic acid termination was prepared in a controlled way by reacting photochemically oxidized BDD with succinic anhydride. The resulting interface was readily employed for the linking of an amine-terminated ligand such as an osmium complex bearing an amine terminal group. The interfaces were characterized using X-ray photoelectron spectroscopy (XPS) and cyclic voltammetry (CV). Contact angle measurements were used to follow the changes in surface wetting properties due to surface functionalization. The chemical reactivity of the carboxyl-terminated BDD was investigated by covalent coupling of the acid groups to an amine-terminated osmium complex.

  20. Electroanalytical determination of estriol hormone using a boron-doped diamond electrode.

    Science.gov (United States)

    Santos, Keliana D; Braga, Otoniel C; Vieira, Iolanda C; Spinelli, Almir

    2010-03-15

    A boron-doped diamond (BDD) electrode was used for the electroanalytical determination of estriol hormone in a pharmaceutical product and a urine sample taken during pregnancy by square-wave voltammetry. The optimized experimental conditions were: (1) a supporting electrolyte solution of NaOH at a pH of 12.0, and (2) a frequency of 20 Hz, a pulse height of 30 mV and a scan increment of 2 mV (for the square-wave parameters). The analytical curve was linear in the concentration range of 2.0 x 10(-7) to 2.0 x 10(-5) mol L(-1) (r=0.9994), with a detection limit of 1.7 x 10(-7) mol L(-1) and quantification limit of 8.5 x 10(-7) mol L(-1). Recoveries of estriol were in the range of 98.6-101.0%, for the pharmaceutical sample, and 100.2-103.4% for the urine sample, indicating no significant matrix interference effects on the analytical results. The accuracy of the electroanalytical methodology proposed was compared to that of the radioimmunoassay method. The values for the relative error between the proposed and standard methods were -7.29% for the determination of estriol in the commercial product and -4.98% in a urine sample taken during pregnancy. The results obtained suggest a reliable and interesting alternative method for electroanalytical determination of estriol in pharmaceutical products and urine samples taken during pregnancy using a boron-doped diamond electrode.

  1. DC current and AC impedance measurements on boron-doped single crystalline diamond films

    Energy Technology Data Exchange (ETDEWEB)

    Ye, Haitao; Gaudin, O.; Jackman, R.B. [Department of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE (United Kingdom); Muret, P.; Gheeraert, E. [Laboratoire d' Etudes des Proprietes Electroniques des Solides, BP166, 38042 Grenoble Cedex 9 (France)

    2003-09-01

    In this paper, we report the first measurement of impedance on boron-doped single crystalline diamond films from 0.1 Hz to 10 MHz with the temperature ranging from -100 C up to 300 C. The Cole-Cole (Z' via Z{sup ''}) plots are well fitted to a RC parallel circuit model and the equivalent Resistance and Capacitance for the diamond films have been estimated using the Zview curve fitting. The results show only one single semicircle response at each temperature measured. It was found that the resistance decreases from 70 G{omega} at -100 C to 5 k{omega} at 300 C. The linear curve fitting from -100 C to 150 C shows the sample has an activation energy of 0.37 eV, which is consistent with the theoretical value published of this kind of material. The equivalent capacitance is maintained at the level of pF up to 300 C suggesting that no grain boundaries are being involved, as expected from a single crystal diamond. The activation energy from the dc current-temperature curves is 0.36 eV, which is consistent with the value from ac impedance. The potential of this under-used technique for diamond film analysis will be discussed. (copyright 2003 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  2. Raman Microscopic Analysis of Internal Stress in Boron-Doped Diamond

    Directory of Open Access Journals (Sweden)

    Kevin E. Bennet

    2015-05-01

    Full Text Available Analysis of the induced stress on undoped and boron-doped diamond (BDD thin films by confocal Raman microscopy is performed in this study to investigate its correlation with sample chemical composition and the substrate used during fabrication. Knowledge of this nature is very important to the issue of long-term stability of BDD coated neurosurgical electrodes that will be used in fast-scan cyclic voltammetry, as potential occurrence of film delaminations and dislocations during their surgical implantation can have unwanted consequences for the reliability of BDD-based biosensing electrodes. To achieve a more uniform deposition of the films on cylindrically-shaped tungsten rods, substrate rotation was employed in a custom-built chemical vapor deposition reactor. In addition to visibly preferential boron incorporation into the diamond lattice and columnar growth, the results also reveal a direct correlation between regions of pure diamond and enhanced stress. Definite stress release throughout entire film thicknesses was found in the current Raman mapping images for higher amounts of boron addition. There is also a possible contribution to the high values of compressive stress from sp2 type carbon impurities, besides that of the expected lattice mismatch between film and substrate.

  3. Biofouling resistance of boron-doped diamond neural stimulation electrodes is superior to titanium nitride electrodes in vivo

    DEFF Research Database (Denmark)

    Meijs, Suzan; Alcaide, Maria; Sørensen, Charlotte;

    2016-01-01

    OBJECTIVE: The goal of this study was to assess the electrochemical properties of boron-doped diamond (BDD) electrodes in relation to conventional titanium nitride (TiN) electrodes through in vitro and in vivo measurements. APPROACH: Electrochemical impedance spectroscopy, cyclic voltammetry and ...... electrodes possess a superior biofouling resistance, which provides significantly stable electrochemical properties both in protein solution as well as in vivo compared to TiN electrodes....

  4. Electrochemical Sensing and Assessment of Parabens in Hydro-Alcoholic Solutions and Water Using a Boron-Doped Diamond Electrode

    OpenAIRE

    Vasile Ostafe; Codruta Cofan; Manuela Mincea; Florica Manea; Dan Cinghită; Ciprian Radovan

    2008-01-01

    In this paper, the electrochemical behaviour of several parabens preservatives, i.e. esters of p-hydroxybenzoic acid, methyl-, ethyl- and propyl-4-hydroxybenzoates as methyl-, ethyl- and propyl-parabens (MB, EB, and PB), has been investigated at a commercial boron-doped diamond electrode (BDDE), especially in the anodic potential range, in both hydro-alcoholic and aqueous media. The cyclic voltammetric and chronoamperometric measurements yielded calibration plots with very good linearity (R2 ...

  5. Cathodic reductive coupling of methyl cinnamate on boron-doped diamond electrodes and synthesis of new neolignan-type products

    Directory of Open Access Journals (Sweden)

    Taiki Kojima

    2015-02-01

    Full Text Available The electroreduction reaction of methyl cinnamate on a boron-doped diamond (BDD electrode was investigated. The hydrodimer, dimethyl 3,4-diphenylhexanedioate (racemate/meso = 74:26, was obtained in 85% yield as the major product, along with small amounts of cyclic methyl 5-oxo-2,3-diphenylcyclopentane-1-carboxylate. Two new neolignan-type products were synthesized from the hydrodimer.

  6. In vivo biocompatibility of boron doped and nitrogen included conductive-diamond for use in medical implants.

    Science.gov (United States)

    Garrett, David J; Saunders, Alexia L; McGowan, Ceara; Specks, Joscha; Ganesan, Kumaravelu; Meffin, Hamish; Williams, Richard A; Nayagam, David A X

    2016-01-01

    Recently, there has been interest in investigating diamond as a material for use in biomedical implants. Diamond can be rendered electrically conducting by doping with boron or nitrogen. This has led to inclusion of boron doped and nitrogen included diamond elements as electrodes and/or feedthroughs for medical implants. As these conductive device elements are not encapsulated, there is a need to establish their clinical safety for use in implants. This article compares the biocompatibility of electrically conducting boron doped diamond (BDD) and nitrogen included diamond films and electrically insulating poly crystalline diamond films against a silicone negative control and a BDD sample treated with stannous octoate as a positive control. Samples were surgically implanted into the back muscle of a guinea pig for a period of 4-15 weeks, excised and the implant site sectioned and submitted for histological analysis. All forms of diamond exhibited a similar or lower thickness of fibrotic tissue encapsulating compared to the silicone negative control samples. All forms of diamond exhibited similar or lower levels of acute, chronic inflammatory, and foreign body responses compared to the silicone negative control indicating that the materials are well tolerated in vivo.

  7. Optical and electrical properties of boron doped diamond thin conductive films deposited on fused silica glass substrates

    Science.gov (United States)

    Ficek, M.; Sobaszek, M.; Gnyba, M.; Ryl, J.; Gołuński, Ł.; Smietana, M.; Jasiński, J.; Caban, P.; Bogdanowicz, R.

    2016-11-01

    This paper presents boron-doped diamond (BDD) film as a conductive coating for optical and electronic purposes. Seeding and growth processes of thin diamond films on fused silica have been investigated. Growth processes of thin diamond films on fused silica were investigated at various boron doping level and methane admixture. Two step pre-treatment procedure of fused silica substrate was applied to achieve high seeding density. First, the substrates undergo the hydrogen plasma treatment then spin-coating seeding using a dispersion consisting of detonation nanodiamond in dimethyl sulfoxide with polyvinyl alcohol was applied. Such an approach results in seeding density of 2 × 1010 cm-2. The scanning electron microscopy images showed homogenous, continuous and polycrystalline surface morphology with minimal grain size of 200 nm for highly boron doped films. The sp3/sp2 ratio was calculated using Raman spectra deconvolution method. A high refractive index (range of 2.0-2.4 @550 nm) was achieved for BDD films deposited at 500 °C. The values of extinction coefficient were below 0.1 at λ = 550 nm, indicating low absorption of the film. The fabricated BDD thin films displayed resistivity below 48 Ohm cm and transmittance over 60% in the visible wavelength range.

  8. Electroanalytical investigation and determination of pefloxacin in pharmaceuticals and serum at boron-doped diamond and glassy carbon electrodes.

    Science.gov (United States)

    Uslu, Bengi; Topal, Burcu Dogan; Ozkan, Sibel A

    2008-02-15

    The anodic behavior and determination of pefloxacin on boron-doped diamond and glassy carbon electrodes were investigated using cyclic, linear sweep, differential pulse and square wave voltammetric techniques. In cyclic voltammetry, pefloxacin shows one main irreversible oxidation peak and additional one irreversible ill-defined wave depending on pH values for both electrodes. The results indicate that the process of pefloxacin is irreversible and diffusion controlled on boron-doped diamond electrode and irreversible but adsorption controlled on glassy carbon electrode. The peak current is found to be linear over the range of concentration 2x10(-6) to 2x10(-4)M in 0.5M H(2)SO(4) at about +1.20V (versus Ag/AgCl) for differential pulse and square wave voltammetric technique using boron-doped diamond electrode. The repeatability, reproducibility, precision and accuracy of the methods in all media were investigated. Selectivity, precision and accuracy of the developed methods were also checked by recovery studies. The procedures were successfully applied to the determination of the drug in pharmaceutical dosage forms and humans serum samples with good recovery results. No electroactive interferences from the excipients and endogenous substances were found in the pharmaceutical dosage forms and biological samples, respectively.

  9. Direct electrochemistry of blue copper proteins at boron-doped diamond electrodes

    Energy Technology Data Exchange (ETDEWEB)

    McEvoy, James P. [Department of Chemistry, University of Oxford, Chemistry Research Laboratory, Mansfield Road, Oxford, OX1 3TA (United Kingdom); Foord, John S. [Department of Chemistry, University of Oxford, Chemistry Research Laboratory, Mansfield Road, Oxford, OX1 3TA (United Kingdom)]. E-mail: john.foord@chem.ox.ac.uk

    2005-05-05

    Boron-doped diamond (BDD) is a promising electrode material for use in the spectro-electrochemical study of redox proteins and, in this investigation, cyclic voltammetry was used to obtain quasi-reversible electrochemical responses from two blue copper proteins, parsley plastocyanin and azurin from Pseudomonas aeruginosa. No voltammetry was observed at the virgin electrodes, but signals were observed if the electrodes were anodised, or abraded with alumina, prior to use. Plastocyanin, which has a considerable overall negative charge and a surface acidic patch which is important in forming a productive electron transfer complex with its redox partners, gave a faradaic signal at pre-treated BDD only in the presence of neomycin, a positively charged polyamine. The voltammetry of azurin, which has a small overall charge and no surface acidic patch, was obtained identically in the presence and absence of neomycin. Investigations were also carried out into the voltammetry of two site-directed mutants of azurin, M64E azurin and M44K azurin, each of which introduce a charge into the protein's surface hydrophobic patch. The oxidizing and cleaning effects of the BDD electrode pre-treatments were studied electrochemically using two inorganic probe ions, Fe(China){sub 6} {sup 3-} and Ru(NH{sub 3}){sub 6} {sup 3+}, and by X-ray photoelectron spectroscopy (XPS). All of the electrochemical results are discussed in relation to the electrostatic and hydrophobic contributions to the protein/diamond electrochemical interaction.

  10. Metal-bosonic insulator-superconductor transition in boron-doped granular diamond.

    Science.gov (United States)

    Zhang, Gufei; Zeleznik, Monika; Vanacken, Johan; May, Paul W; Moshchalkov, Victor V

    2013-02-15

    In a variety of superconductors, mostly in two-dimensional (2D) and one-dimensional (1D) systems, the resistive superconducting transition R(T) demonstrates in many cases an anomalous narrow R(T) peak just preceding the onset of the superconducting state R=0 at T(c). The amplitude of this R(T) peak in 1D and 2D systems ranges from a few up to several hundred percent. In three-dimensional (3D) systems, however, the R(T) peak close to T(c) is rarely observed, and it reaches only a few percent in amplitude. Here we report on the observation of a giant (∼1600%) and very narrow (∼1  K) resistance peak preceding the onset of superconductivity in heavily boron-doped diamond. This anomalous R(T) peak in a 3D system is interpreted in the framework of an empirical model based on the metal-bosonic insulator-superconductor transitions induced by a granularity-correlated disorder in heavily doped diamond.

  11. Amperometric Determination of Sulfite by Gas Diffusion- Sequential Injection with Boron-Doped Diamond Electrode

    Directory of Open Access Journals (Sweden)

    Orawon Chailapakul

    2008-03-01

    Full Text Available A gas diffusion sequential injection system with amperometric detection using aboron-doped diamond electrode was developed for the determination of sulfite. A gasdiffusion unit (GDU was used to prevent interference from sample matrices for theelectrochemical measurement. The sample was mixed with an acid solution to generategaseous sulfur dioxide prior to its passage through the donor channel of the GDU. Thesulfur dioxide diffused through the PTFE hydrophobic membrane into a carrier solution of 0.1 M phosphate buffer (pH 8/0.1% sodium dodecyl sulfate in the acceptor channel of theGDU and turned to sulfite. Then the sulfite was carried to the electrochemical flow cell anddetected directly by amperometry using the boron-doped diamond electrode at 0.95 V(versus Ag/AgCl. Sodium dodecyl sulfate was added to the carrier solution to preventelectrode fouling. This method was applicable in the concentration range of 0.2-20 mgSO32−/L and a detection limit (S/N = 3 of 0.05 mg SO32−/L was achieved. This method wassuccessfully applied to the determination of sulfite in wines and the analytical resultsagreed well with those obtained by iodimetric titration. The relative standard deviations forthe analysis of sulfite in wines were in the range of 1.0-4.1 %. The sampling frequency was65 h−1.

  12. Characterization of boron doped diamond-like carbon film by HRTEM

    Energy Technology Data Exchange (ETDEWEB)

    Li, X.J., E-mail: lixj@alum.imr.ac.cn [College of Material Science and Engineering, Key Laboratory of Advanced Structural Materials, Ministry of Education, Changchun University of Technology, Changchun 130012 (China); He, L.L., E-mail: llhe@imr.ac.cn [Shenyang National Lab of Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016 (China); Li, Y.S. [Department of Mechanical Engineering, University of Saskatchewan, Saskatoon, SK S7N 5A9 (Canada); Plasma Physics Laboratory, University of Saskatchewan, Saskatoon, SK S7N 5E2 (Canada); Yang, Q. [Department of Mechanical Engineering, University of Saskatchewan, Saskatoon, SK S7N 5A9 (Canada); Hirose, A. [Plasma Physics Laboratory, University of Saskatchewan, Saskatoon, SK S7N 5E2 (Canada)

    2015-12-01

    Graphical abstract: - Highlights: • The microstructure of B-DLC film is studied by HRTEM in cross-sectional observation. • Many crystalline nanoparticles dispersed in the amorphous matrix film are observed. • Through composition and structure analysis, the nanoparticles are identified as B{sub 2}O. • The work implies the doped B element exists as oxide state in the B-DLC film. - Abstract: Boron doped diamond-like carbon (B-DLC) film was synthesized on silicon (1 0 0) wafer by biased target ion beam deposition. High-resolution transmission electron microscopy (HRTEM) is employed to investigate the microstructure of the B-DLC thin film in cross-sectional observation. Many crystalline nanoparticles randomly dispersed and embedded in the amorphous matrix film are observed. Through chemical compositional analysis of the B-DLC film, some amount of O element is confirmed to be contained. And also, some nanoparticles with near zone axes are indexed, which are accordance with B{sub 2}O phase. Therefore, the contained O element causing the B element oxidized is proposed, resulting in the formation of the nanoparticles. Our work indicates that in the B-DLC film a significant amount of the doped B element exists as boron suboxide nanoparticles.

  13. Electrochemical incineration of sulfanilic acid at a boron-doped diamond anode.

    Science.gov (United States)

    El-Ghenymy, Abdellatif; Arias, Conchita; Cabot, Pere Lluís; Centellas, Francesc; Garrido, José Antonio; Rodríguez, Rosa María; Brillas, Enric

    2012-06-01

    The anodic oxidation of sulfanilic acid solutions has been studied in acidic medium using a divided cell with a boron-doped diamond (BDD) anode and a stainless steel cathode. Overall mineralization was achieved under all experimental conditions tested due to the efficient destruction of sulfanilic acid and all its by-products with hydroxyl radicals generated at the BDD anode from water oxidation. The alternative use of an undivided cell with the same electrodes gave rise to the coating of the cathode with polymeric compounds, thus preventing the complete electrochemical incineration of sulfanilic acid. The solutions treated in the anodic compartment of the divided cell were degraded at similar rate under pH regulation within the pH interval 2.0-6.0. The mineralization current efficiency was enhanced when the applied current decreased and the initial substrate concentration increased. The decay of sulfanilic acid was followed by reversed-phase HPLC, showing a pseudo first-order kinetics. Hydroquinone and p-benzoquinone were identified as aromatic intermediates by gas chromatography-mass spectrometry and/or reversed-phase HPLC. Maleic, acetic, formic, oxalic and oxamic acids were detected as generated carboxylic acids by ion-exclusion HPLC. Ionic chromatographic analysis of electrolyzed solutions revealed that the N content of sulfanilic acid was mainly released as NH(4)(+) ion and in much smaller proportion as NO(3)(-) ion.

  14. Direct and Simultaneous Determination of Phenol, Hydroquinone and Nitrophenol at Boron-Doped Diamond Film Electrode

    Institute of Scientific and Technical Information of China (English)

    ZHAO, Guo-Hua; TANG, Yi-Ting; LIU, Mei-Chuan; LEI, Yan-Zhu; XIAO, Xiao-E

    2007-01-01

    The electrochemical characteristics of multi-component phenolic pollutants, such as phenol (Ph), hydroquinone (HQ) and 4-nitrophenol (4-NP), were investigated on boron-doped diamond (BDD) film electrode by differential pulse voltammetry (DPV) technique. A simple and feasible platform was accordingly established for the direct and simultaneous determination of these three phenolic pollutants. Results showed that, Ph, HQ and 4-NP gave obvious oxidation peaks on BDD electrode at the potential of 1.24, 0.76 and 1.52 V, respectively. Each of them displayed good linear relationship between their oxidation peak currents and their corresponding concentrations in a rather wide range coexisting with one or two of the other phenolic pollutants. The detection limits of Ph, HQ and 4-NP were estimated to be as low as 1.82×10-6, 1.67×10-6 and 1.44×10-6mol·L-1, respectively. Therefore, a promising direct and simultaneous electrochemical determination method of multi-component phenolic pollutants in wastewater samples was constructed successfully on BDD electrode with advantages being rapid, simple, convenient, sensitive, in situ and inexpensive.

  15. Continuous and selective measurement of oxytocin and vasopressin using boron-doped diamond electrodes

    Science.gov (United States)

    Asai, Kai; Ivandini, Tribidasari A.; Einaga, Yasuaki

    2016-09-01

    The electrochemical detection of oxytocin using boron-doped diamond (BDD) electrodes was studied. Cyclic voltammetry of oxytocin in a phosphate buffer solution exhibits an oxidation peak at +0.7 V (vs. Ag/AgCl), which is attributable to oxidation of the phenolic group in the tyrosyl moiety. Furthermore, the linearity of the current peaks obtained in flow injection analysis (FIA) using BDD microelectrodes over the oxytocin concentration range from 0.1 to 10.0 μM with a detection limit of 50 nM (S/N = 3) was high (R2 = 0.995). Although the voltammograms of oxytocin and vasopressin observed with an as-deposited BDD electrode, as well as with a cathodically-reduced BDD electrode, were similar, a clear distinction was observed with anodically-oxidized BDD electrodes due to the attractive interaction between vasopressin and the oxidized BDD surface. By means of this distinction, selective measurements using chronoamperometry combined with flow injection analysis at an optimized potential were demonstrated, indicating the possibility of making selective in situ or in vivo measurements of oxytocin.

  16. Electrochemical incineration of dimethyl phthalate by anodic oxidation with boron-doped diamond electrode

    Institute of Scientific and Technical Information of China (English)

    HOU Yining; QU Jiuhui; ZHAO Xu; LIU Huijuan

    2009-01-01

    The anodic oxidation of aqueous solutions containing dimethyl phthalate (DMP) up to 125 mg/L with sodium sulfate (Na2SO4) as supporting electrolyte within the pH range 2.0-10.0 was studied using a one-compartment batch reactor employing a boron-doped diamond (BDD) as anode. Electrolyses were carried out at constant current density (1.5-4.5 mA/cm2). Complete mineralization was always achieved owing to the great concentration of hydroxyl radical (·OH) generated at the BDD surface. The effect of pH, apparent current density and initial DMP concentration on the degradation rate of DMP, the specific charge required for its total mineralization and mineralization current efficiency was investigated systematically. The mineralization rate of DMP was found to be pH-independent and to increase with increasing applied current density. Results indicated that this electrochemical process was subjected, at least partially, to the mass transfer of organics onto the BDD surface. Kinetic analysis of the temporal change of DMP concentration during electrolysis determined by High Performance Liquid Chromatography (HPLC) revealed that DMP decay under all tested conditions followed a pseudo first-order reaction. Aromatic intermediates and generated carboxylic acids were identified by Gas Chromatography-Mass Spectrometry (GC-MS) and a general pathway for the electrochemical incineration of DMP on BDD was proposed.

  17. Electrochemical treatment of cork boiling wastewater with a boron-doped diamond anode.

    Science.gov (United States)

    Fernandes, Annabel; Santos, Diana; Pacheco, Maria José; Ciríaco, Lurdes; Simões, Rogério; Gomes, Arlindo C; Lopes, Ana

    2015-01-01

    Anodic oxidation at a boron-doped diamond anode of cork boiling wastewater was successfully used for mineralization and biodegradability enhancement required for effluent discharge or subsequent biological treatment, respectively. The influence of the applied current density (30-70 mA/cm2) and the background electrolyte concentration (0-1.5 g/L Na2SO4) on the performance of the electrochemical oxidation was investigated. The supporting electrolyte was required to achieve conductivities that enabled anodic oxidation at the highest current intensities applied. The results indicated that pollutant removal increased with the applied current density, and after 8 h, reductions greater than 90% were achieved for COD, dissolved organic carbon, total phenols and colour. The biodegradability enhancement was from 0.13 to 0.59 and from 0.23 to 0.72 for the BOD/COD ratios with BOD of 5 and 20 days' incubation period, respectively. The tests without added electrolyte were performed at lower applied electrical charges (15 mA/cm2 or 30 V) with good organic load removal (up to 80%). For an applied current density of 30 mA/cm2, there was a minimum of electric conductivity of 1.9 mS/cm (corresponding to 0.75 g/L of Na2SO4), which minimized the specific energy consumption.

  18. Boron-doped diamond semiconductor electrodes: Efficient photoelectrochemical CO2 reduction through surface modification

    Science.gov (United States)

    Roy, Nitish; Hirano, Yuiri; Kuriyama, Haruo; Sudhagar, Pitchaimuthu; Suzuki, Norihiro; Katsumata, Ken-Ichi; Nakata, Kazuya; Kondo, Takeshi; Yuasa, Makoto; Serizawa, Izumi; Takayama, Tomoaki; Kudo, Akihiko; Fujishima, Akira; Terashima, Chiaki

    2016-11-01

    Competitive hydrogen evolution and multiple proton-coupled electron transfer reactions limit photoelectrochemical CO2 reduction in aqueous electrolyte. Here, oxygen-terminated lightly boron-doped diamond (BDDL) thin films were synthesized as a semiconductor electron source to accelerate CO2 reduction. However, BDDL alone could not stabilize the intermediates of CO2 reduction, yielding a negligible amount of reduction products. Silver nanoparticles were then deposited on BDDL because of their selective electrochemical CO2 reduction ability. Excellent selectivity (estimated CO:H2 mass ratio of 318:1) and recyclability (stable for five cycles of 3 h each) for photoelectrochemical CO2 reduction were obtained for the optimum silver nanoparticle-modified BDDL electrode at -1.1 V vs. RHE under 222-nm irradiation. The high efficiency and stability of this catalyst are ascribed to the in situ photoactivation of the BDDL surface during the photoelectrochemical reaction. The present work reveals the potential of BDDL as a high-energy electron source for use with co-catalysts in photochemical conversion.

  19. Anodic oxidation of textile dyehouse effluents on boron-doped diamond electrode

    Energy Technology Data Exchange (ETDEWEB)

    Tsantaki, Eleni; Velegraki, Theodora; Katsaounis, Alexandros [Department of Environmental Engineering, Technical University of Crete, Polytechneioupolis, GR-73100 Chania (Greece); Mantzavinos, Dionissios, E-mail: mantzavi@mred.tuc.gr [Department of Environmental Engineering, Technical University of Crete, Polytechneioupolis, GR-73100 Chania (Greece)

    2012-03-15

    The electrochemical oxidation of textile effluents over a boron-doped diamond anode was investigated in the present study. Experiments were conducted with a multi-component synthetic solution containing seventeen dyes and other auxiliary inorganics, as well as an actual effluent from a textile dyeing process. The effect of varying operating parameters, such as current density (4-50 mA/cm{sup 2}), electrolyte concentration (0.1-0.5 M HClO{sub 4}), initial solution pH (1-12.3) and temperature (22-43 Degree-Sign C), on process efficiency was investigated following changes in total organic carbon (TOC), chemical oxygen demand (COD) and color. Complete decolorization accompanied by significant mineralization (up to 85% depending on the conditions) could be achieved after 180 min of treatment. Performance was improved at higher electrolyte concentrations and lower pH values, while the effect of temperature was marginal. Energy consumption per unit mass of COD removed was favored at lower current densities, since energy was unnecessarily wasted to side reactions at higher densities.

  20. Electro-oxidation of diclofenac at boron doped diamond: Kinetics and mechanism

    Energy Technology Data Exchange (ETDEWEB)

    Zhao Xu; Hou Yining; Liu Huijuan; Qiang Zhimin [State Key Laboratory of Environmental Aquatic Chemistry, Research Center for Eco-Environmental Sciences, Chinese Academy of Sciences, Beijing, 100085 (China); Qu Jiuhui [State Key Laboratory of Environmental Aquatic Chemistry, Research Center for Eco-Environmental Sciences, Chinese Academy of Sciences, Beijing, 100085 (China)], E-Mail: jhqu@mail.rcees.ac.cn

    2009-07-01

    Diclofenac is a common anti-inflammatory drug. Its electrochemical degradation at boron doped diamond electrode was investigated in aqueous solution. The degradation kinetics and the intermediate products were studied. Results showed that electro-oxidation was effective in inducing the degradation of diclofenac with 30 mg/L initial concentration, ensuring a mineralization degree of 72% after a 4 h treatment with the applied bias potential of 4.0 V. The effects of applied bias potential and addition of NaCl on diclofenac degradation were investigated. Different degradation mechanisms of diclofenac were involved at various applied bias potentials. With the addition of NaCl, some chlorination intermediates including dichlorodiclofenac were identified, which lead to the total organic carbon increase compared with the electrolysis process without NaCl addition at the reaction initial period. The main intermediates including 2,6-dichlorobenzenamine, 2,5-dihydroxybenzyl alcohol, and benzoic acid are identified at the time of 2 h. 1-(2,6-Dichlorocyclohexa-2,4-dienyl)indolin-2-one were also identified. These intermediates disappeared gradually with the extension of reaction time. Small molecular acids were identified finally. Based on these results, a degradation pathway of diclofenac was proposed.

  1. Electrochemical treatment of 2,4-dinitrophenol aqueous wastes using boron-doped diamond anodes

    Energy Technology Data Exchange (ETDEWEB)

    Canizares, P. [Department of Chemical Engineering, Facultad de Ciencias Quimicas, Universidad de Castilla-La Mancha, Campus Universitario s/n, 13071 Ciudad Real (Spain); Saez, C. [Department of Chemical Engineering, Facultad de Ciencias Quimicas, Universidad de Castilla-La Mancha, Campus Universitario s/n, 13071 Ciudad Real (Spain); Lobato, J. [Department of Chemical Engineering, Facultad de Ciencias Quimicas, Universidad de Castilla-La Mancha, Campus Universitario s/n, 13071 Ciudad Real (Spain); Rodrigo, M.A. [Department of Chemical Engineering, Facultad de Ciencias Quimicas, Universidad de Castilla-La Mancha, Campus Universitario s/n, 13071 Ciudad Real (Spain)]. E-mail: manuel.rodrigo@uclm.es

    2004-10-15

    The electrochemical oxidation of 2,4-dinitrophenol (2,4-DNP) aqueous wastes has been studied using both, bulk electrolysis and voltammetric techniques. To carry out the bulk electrolysis, a bench-scale plant with a single compartment electrochemical flow cell was used. Boron-doped diamond (BDD) materials were used as the anode and stainless steel (AISI 304) as the cathode. According to the obtained results, a simple mechanistic model has been proposed. The oxidation of 2,4-DNP leads to the appearance of phenol and quinonic compounds and to the release of the nitro groups from the aromatic ring, in a first step. In a second step, these organics are transformed into carboxylic acids (mainly maleic and oxalic acid). The process ends with the formation of carbon dioxide (CO{sub 2}). The effects of the waste characteristics (composition and pH) and of the operation parameters of the process (temperature and current density) have also been studied in this work. The complete removal of the organic compounds contained in the waste has been obtained in all essays.

  2. Bioelectrochemical degradation of urea at platinized boron doped diamond electrodes for bioregenerative systems

    Science.gov (United States)

    Nicolau, Eduardo; González-González, Ileana; Flynn, Michael; Griebenow, Kai; Cabrera, Carlos R.

    2009-10-01

    The recovery of potable water from space mission wastewater is critical for the life support and environmental health of crew members in long-term missions. NASA estimates reveal that at manned space missions 1.91 kg/person day of urine is produced, with urea and various salts as its main components. In this research we explore the utilization of urease (EC 3.5.1.5, 15,000 U/g) along with a platinized boron doped diamond electrode (Pt-BDD) to degrade urea. Urea is directly degraded to nitrogen by the in situ utilization of the reaction products as a strategy to increase the amount of clean water in future space expeditions. The biochemical reaction of urease produces ammonia and carbon dioxide from urea. Thereafter, ammonia is electrooxidized at the interface of the Pt-BDD producing molecular nitrogen. The herein presented system has been proven to have 20% urea conversion efficiency. This research has potential applications for future long-term space missions since the reaction byproducts could be used for a biomass subsystem (in situ resource recovery), while generating electricity from the same process.

  3. Simultaneous Chronoamperometric Sensing of Ascorbic Acid and Acetaminophen at a Boron-Doped Diamond Electrode

    Directory of Open Access Journals (Sweden)

    Ciprian Radovan

    2008-06-01

    Full Text Available Cyclic voltammetry (CV and chronoamperometry (CA have been used to sense and determine simultaneously L-ascorbic acid (AA and acetaminophen (AC at a boron-doped diamond electrode (BDDE in a Britton-Robinson buffer solution. The calibration plots of anodic current peak versus concentration obtained from CV and CA data for both investigated compounds in single and di-component solutions over the concentration range 0.01 mM – 0.1 mM proved to be linear, with very good correlation parameters. Sensitivity values and RSD of 2-3% were obtained for various situations, involving both individual and simultaneous presence of AA and AC. The chronoamperometric technique associated with standard addition in sequential one step and/or two successive and continuous chronoamperograms at two characteristic potential levels represented a feasible option for the simultaneous determination of AA and AC in real sample systems such as pharmaceutical formulations. The average values indicated by the supplier were confirmed to a very close approximation from chronoamperomgrams by using several additions with the application of suitable current correction factors.

  4. Electrochemical oxidation of N-nitrosodimethylamine with boron-doped diamond film electrodes.

    Science.gov (United States)

    Chaplin, Brian P; Schrader, Glenn; Farrell, James

    2009-11-01

    This research investigated NDMA oxidation by boron-doped diamond (BDD) film electrodes. Oxidation rates were measured as a function of electrode potential, current density, and temperature using rotating disk and flow-through reactors. Final NDMA reaction products were carbon dioxide, ammonium, and nitrate, with dimethylamine and methylamine as intermediate products. Reaction rates were first-order with respect to NDMA concentration and surface area normalized oxidation rates as high as 850 +/- 50 L/m(2)-hr were observed at a current density of 10 mA/cm(2). The flow-through reactor yielded mass transfer limited reaction rates that were first-order in NDMA concentration, with a half-life of 2.1 +/- 0.1 min. Experimental evidence indicates that NDMA oxidation proceeds via a direct electron transfer at potentials >1.8 V/SHE with a measured apparent activation energy of 3.1 +/- 0.5 kJ/mol at a potential of 2.5 V/SHE. Density functional theory calculations indicate that a direct two-electron transfer can produce a stable NDMA((+2)) species that is stabilized by forming an adduct with water. The transfer of two electrons from NDMA to the electrode allows an activation-less attack of hydroxyl radicals on the NDMA((+2)) water adduct. At higher overpotentials the oxidation of NDMA occurs by a combination of direct electron transfer and hydroxyl radicals produced via water electrolysis.

  5. Highly conductive boron doped micro/nanocrystalline silicon thin films deposited by VHF-PECVD for solar cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Juneja, Sucheta; Sudhakar, S., E-mail: sudhakars@nplindia.org; Gope, Jhuma; Lodhi, Kalpana; Sharma, Mansi; Kumar, Sushil

    2015-09-15

    Graphical abstract: AFM images of boron doped micro/nanocrystalline silicon films at different diborane gas flow. - Highlights: • High deposition rate of 10 Å/s was achieved for boron doped silicon films. • Wide range of optical band gap from 1.32 eV to 1.84 eV observed for the deposited films. - Abstract: Boron doped hydrogenated micro/nanocrystalline silicon (μc/nc-Si:H) thin films have been deposited by plasma enhanced chemical vapor deposition technique (PECVD) using silane (SiH{sub 4}) diluted in argon. Diborane (B{sub 2}H{sub 6}) was used as the dopant gas and deposition was carried out at substrate temperature of 200 °C. The diborane flow (F{sub B}) varied in the range 0.00–0.30. Here, we report the effects of B{sub 2}H{sub 6} doping on electronic, optical and structural properties of hydrogenated micro/nanocrystalline silicon films. The structural properties were analyzed by atomic force microscopy (AFM) and X-ray diffraction (XRD). The doped micro/nano crystalline silicon films presented a crystallographic orientation preferentially in the (1 1 1) and (2 2 0) plane. We resolve the deposition parameters that lead to the formation of p-type micro/nanocrystalline silicon thin films with very high value of conductivity and lower optical band gap. Correlations between structural and electrical properties were also studied. Based on temperature dependent conductivity measurements, it has been observed that the room temperature dark conductivity varies in the range 1.45 × 10{sup −4} Ω{sup −1} cm{sup −1} to 2.02 Ω{sup −1} cm{sup −1} for the B-doped films. Meanwhile, the corresponding value of activation energies decreased to 0.06 eV for the B-doped films, which indicates the doped μc/nc-Si films with high conductivity can be achieved and these films prove to be a very good candidate for application in amorphous and micro/nano crystalline silicon solar cells as a p-type window layer.

  6. Degradation of microcystin-RR using boron-doped diamond electrode

    Energy Technology Data Exchange (ETDEWEB)

    Zhang Chunyong, E-mail: batzcy3000@tom.com [State Key Laboratory of Bioelectronics, Southeast University, Nanjing 210096 (China); School of Science, Nanjing Agricultural University, Nanjing 210095 (China); Suzhou Key Laboratory of Environment and Biosafety, Suzhou Academy of Southeast University, Dushuhu Lake Higher Education Town, Suzhou 215123 (China); Fu Degang, E-mail: fudegang@seu.edu.cn [State Key Laboratory of Bioelectronics, Southeast University, Nanjing 210096 (China); Suzhou Key Laboratory of Environment and Biosafety, Suzhou Academy of Southeast University, Dushuhu Lake Higher Education Town, Suzhou 215123 (China); Gu Zhongze, E-mail: gu@seu.edu.cn [State Key Laboratory of Bioelectronics, Southeast University, Nanjing 210096 (China); Suzhou Key Laboratory of Environment and Biosafety, Suzhou Academy of Southeast University, Dushuhu Lake Higher Education Town, Suzhou 215123 (China)

    2009-12-30

    Microcystins (MCs), produced by blue-green algae, are one of the most common naturally occurring toxins found in natural environment. The presence of MCs in drinking water sources poses a great threat to people's health. In this study, the degradation behavior of microcystin-RR on boron-doped diamond (BDD) electrode was investigated under galvanostatic conditions. Such parameters as reaction time, supporting electrolyte and applied current density were varied in order to determine their effects on this oxidation process. The experimental results revealed the suitability of electrochemical processes employing BDD electrode for removing MC-RR from the solution. However, the efficient removal of MC-RR only occurred in the presence of sodium chloride that acted as redox mediators and the reaction was mainly affected by the chloride concentration (c{sub NaCl}) and applied current density (I{sub appl}). Full and quick removal of 0.50 {mu}g/ml MC-RR in solution was achieved when the operating conditions of c{sub NaCl} and I{sub appl} were 20 mM and 46.3 mA/cm{sup 2}, or 35 mM and 18.2 mA/cm{sup 2} respectively. The kinetics for MC-RR degradation followed a pesudo-first order reaction in most cases, indicating the process was under mass transfer control. As a result of its excellent performance, the BDD technology could be considered as a promising alternative to promote the degradation of MC-RR than chlorination in drinking water supplies.

  7. Bioelectrochemical degradation of urea at platinized boron doped diamond electrodes for bioregenerative applications

    Science.gov (United States)

    Nicolau, Eduardo; Gonzalez, Ileana; Nicolau, Eduardo; Cabrera, Carlos R.

    The recovery of potable water from space mission wastewater is critical for the life support and environmental health of crew members in long-term missions. NASA estimates reveal that at manned space missions 0.06 kg/person·day of urine is produced, with urea and various salts as its main components. Current spacecraft water reclamation strategies include the utilization of not only multifiltration systems (MF) and reverse osmosis (RO), but also biological components to deal with crew urine streams. In this research we explore the utilization of urease (EC 3.5.1.5) to convert urea directly to nitrogen by the in-situ utilization of the reaction products, to increase the amount of clean water in future space expeditions. First of all, platinum was electrodeposited on boron doped diamond electrodes by cycling the potential between -0.2 V and 1.0 V in metal/0.5 M H2SO4 solution. SEM images of the electrodes showed a distribution of platinum nanoparticles ranging between 50 nm and 300 nm. The biochemical reaction of urease in nature produces ammonia and carbon dioxide from urea. Based on this, Cyclic Voltammetry experiments of an ammonium acetate solution at pH 10 were performed showing an anodic peak at -0.3 V vs. Ag/AgCl due to the ammonia oxidation. Then, a urease solution (Jack Bean) was poured into the electrochemical cell and subsequent additions of urea were performed with the potential held at -0.3 V in order to promote ammonia oxidation. Chronoamperometry data shows that with more than five urea additions the enzyme still responding by producing ammonia, which is being subsequently oxidized at the electrode surface and producing molecular nitrogen. This research has tremendous applications for future long-term space missions since the reaction byproducts could be used for a biomass subsystem (in-situ resource recovery), while generating electricity from the same process.

  8. Boron-doped diamond film electrode as a sensitive and selective electrochemical sensor for the determination of paracetamol

    OpenAIRE

    Švorc, Ľubomír; Sochr, Jozef; Rievaj, Miroslav; Bustin, Dušan

    2012-01-01

    A simple, sensitive and selective differential pulse voltammetry method for determination of paracetamol on a bare (unmodified) boron-doped diamond film electrode has been developed. It was found by cyclic voltammetry that paracetamol provided the quasireversible wave with oxidation peak on the forward scan about +0.90 V and smaller reduction peak on the reverse scan at +0.68 V vs. Ag/AgCl. The effect of supporting electrolyte, pH and scan rate on voltammetric response of paracetamol was stud...

  9. Feedback-amplified electrochemical dual-plate boron-doped diamond microtrench detector for flow injection analysis

    Science.gov (United States)

    Lewis, Grace E M; Gross, Andrew J; Kasprzyk-Hordern, Barbara; Lubben, Anneke T; Marken, Frank

    2015-01-01

    An electrochemical flow cell with a boron-doped diamond dual-plate microtrench electrode has been developed and demonstrated for hydroquinone flow injection electroanalysis in phosphate buffer pH 7. Using the electrochemical generator-collector feedback detector improves the sensitivity by one order of magnitude (when compared to a single working electrode detector). The diffusion process is switched from an analyte consuming “external” process to an analyte regenerating “internal” process with benefits in selectivity and sensitivity. PMID:25735831

  10. Growth of boron doped hydrogenated nanocrystalline cubic silicon carbide (3C-SiC) films by Hot Wire-CVD

    Energy Technology Data Exchange (ETDEWEB)

    Pawbake, Amit [School of Energy Studies, Savitribai Phule Pune University, Pune 411 007 (India); Tata Institute of Fundamental Research, Colaba, Mumbai 400 005 (India); Mayabadi, Azam; Waykar, Ravindra; Kulkarni, Rupali; Jadhavar, Ashok [School of Energy Studies, Savitribai Phule Pune University, Pune 411 007 (India); Waman, Vaishali [Modern College of Arts, Science and Commerce, Shivajinagar, Pune 411 005 (India); Parmar, Jayesh [Tata Institute of Fundamental Research, Colaba, Mumbai 400 005 (India); Bhattacharyya, Somnath [Department of Metallurgical and Materials Engineering, IIT Madras, Chennai 600 036 (India); Ma, Yuan‐Ron [Department of Physics, National Dong Hwa University, Hualien 97401, Taiwan (China); Devan, Rupesh; Pathan, Habib [Department of Physics, Savitribai Phule Pune University, Pune 411007 (India); Jadkar, Sandesh, E-mail: sandesh@physics.unipune.ac.in [Department of Physics, Savitribai Phule Pune University, Pune 411007 (India)

    2016-04-15

    Highlights: • Boron doped nc-3C-SiC films prepared by HW-CVD using SiH{sub 4}/CH{sub 4}/B{sub 2}H{sub 6}. • 3C-Si-C films have preferred orientation in (1 1 1) direction. • Introduction of boron into SiC matrix retard the crystallanity in the film structure. • Film large number of SiC nanocrystallites embedded in the a-Si matrix. • Band gap values, E{sub Tauc} and E{sub 04} (E{sub 04} > E{sub Tauc}) decreases with increase in B{sub 2}H{sub 6} flow rate. - Abstract: Boron doped nanocrystalline cubic silicon carbide (3C-SiC) films have been prepared by HW-CVD using silane (SiH{sub 4})/methane (CH{sub 4})/diborane (B{sub 2}H{sub 6}) gas mixture. The influence of boron doping on structural, optical, morphological and electrical properties have been investigated. The formation of 3C-SiC films have been confirmed by low angle XRD, Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), Fourier transform infra-red (FTIR) spectroscopy and high resolution-transmission electron microscopy (HR-TEM) analysis whereas effective boron doping in nc-3C-SiC have been confirmed by conductivity, charge carrier activation energy, and Hall measurements. Raman spectroscopy and HR-TEM analysis revealed that introduction of boron into the SiC matrix retards the crystallanity in the film structure. The field emission scanning electron microscopy (FE-SEM) and non contact atomic force microscopy (NC-AFM) results signify that 3C-SiC film contain well resolved, large number of silicon carbide (SiC) nanocrystallites embedded in the a-Si matrix having rms surface roughness ∼1.64 nm. Hydrogen content in doped films are found smaller than that of un-doped films. Optical band gap values, E{sub Tauc} and E{sub 04} decreases with increase in B{sub 2}H{sub 6} flow rate.

  11. TECHNIQUE OF ESTIMATE OF ABSORPTION COEFFICIENT LASER RADIATION IN BORON DOPED DIAMONDS BY INTENSITY OF RAMAN SCATTERING

    Directory of Open Access Journals (Sweden)

    O. N. Poklonskaya

    2013-01-01

    Full Text Available Results of measurements of Raman scattering at the room temperature in air in boron doped synthetic diamonds (five with boron concentrations 2·1017; 6·1017; 2·1018; 1,7·1019; 1·1020 cm–3 and one intentionally undoped are presented. The laser with wavelength 532 nm was used for Raman scattering excitation. Dependences of integral intensity and halfwidth of diamond Raman line with respect to the doping level are presented. In the geometrical optics approximation an expression for doped to undoped integral intensity ratio is obtained. Qualitative estimates of conductivity of the studied samples are conducted. The obtained results can be applied for mapping of near-surface laser radiation absorption coefficient of synthetic single crystal diamonds and for their quality control.

  12. Enhanced capacitance of composite TiO2 nanotube/boron-doped diamond electrodes studied by impedance spectroscopy.

    Science.gov (United States)

    Siuzdak, K; Bogdanowicz, R; Sawczak, M; Sobaszek, M

    2015-01-14

    We report on novel composite nanostructures based on boron-doped diamond thin films grown on top of TiO2 nanotubes. The nanostructures made of BDD-modified titania nanotubes showed an increase in activity and performance when used as electrodes in electrochemical environments. The BDD thin films (∼200-500 nm) were deposited using microwave plasma assisted chemical vapor deposition (MW PA CVD) onto anodically fabricated TiO2 nanotube arrays. The influence of boron-doping level, methane admixture and growth time on the performance of the Ti/TiO2/BDD electrode was studied in detail. Scanning electron microscopy (SEM) was applied to investigate the surface morphology and grain size distribution. Moreover, the chemical composition of TiO2/BDD electrodes was investigated by means of micro-Raman spectroscopy. The composite electrodes TiO2/BDD are characterized by a significantly higher capacitive current compared to BDD films deposited directly onto a Ti substrate. The novel composite electrode of TiO2 nanotube arrays overgrown by boron-doped diamond (BDD) immersed in 0.1 M NaNO3 can deliver a specific capacitance of 2.10, 4.79, and 7.46 mF cm(-2) at a scan rate of 10 mV s(-1) for a [B]/[C] ratio of 2k, 5k and 10k, respectively. The substantial improvement of electrochemical performance and the excellent rate capability could be attributed to the synergistic effect of TiO2 treatment in CH4 : H2 plasma and the high electrical conductivity of BDD layers. The analysis of electrochemical impedance spectra using an electric equivalent circuit allowed us to determine the surface area on the basis of the value of constant phase element.

  13. Boron doped diamond sensor for sensitive determination of metronidazole: Mechanistic and analytical study by cyclic voltammetry and square wave voltammetry

    Energy Technology Data Exchange (ETDEWEB)

    Ammar, Hafedh Belhadj, E-mail: hbelhadjammar@yahoo.fr; Brahim, Mabrouk Ben; Abdelhédi, Ridha; Samet, Youssef

    2016-02-01

    The performance of boron-doped diamond (BDD) electrode for the detection of metronidazole (MTZ) as the most important drug of the group of 5-nitroimidazole was proven using cyclic voltammetry (CV) and square wave voltammetry (SWV) techniques. A comparison study between BDD, glassy carbon and silver electrodes on the electrochemical response was carried out. The process is pH-dependent. In neutral and alkaline media, one irreversible reduction peak related to the hydroxylamine derivative formation was registered, involving a total of four electrons. In acidic medium, a prepeak appears probably related to the adsorption affinity of hydroxylamine at the electrode surface. The BDD electrode showed higher sensitivity and reproducibility analytical response, compared with the other electrodes. The higher reduction peak current was registered at pH 11. Under optimal conditions, a linear analytical curve was obtained for the MTZ concentration in the range of 0.2–4.2 μmol L{sup −1}, with a detection limit of 0.065 μmol L{sup −1}. - Highlights: • SWV for the determination of MTZ • Boron-doped diamond as a new electrochemical sensor • Simple and rapid detection of MTZ • Efficiency of BDD for sensitive determination of MTZ.

  14. Electrochemical Detection of Clenbuterol in Pig Liver at Pyrrole-DNA Modified Boron-doped Diamond Electrode

    Institute of Scientific and Technical Information of China (English)

    WU Jing; LI Xiao-li; WU Xu-mei; HUAN Shuang-yan; SHEN Guo-li; YU Ru-qin

    2005-01-01

    The direct detection of clenbuterol(CL) in pig liver without any extraction separation at a pyrrole-DNA modified boron-doped diamond(BDD) electrode is reported. The pyrrole-DNA modified BDD electrode has a strong electrocatalytic effect on the redox reaction of CL. One oxidization and two reduction peaks of CL appear at 340.2, 299.8 and 166.6 mV(versus SCE), respectively. The pyrrole polymer alone cannot electrocatalyze the above reaction at a BDD electrode; the electrocatalytic effect of a BDD electrode modified with DNA membrane is unsufficient for the analytical detection of CL; the replacement of boron-doped diamond by glass carbon makes the electrocatalytic reaction impossible; the redox process is pH dependent. The influences of various experimental parameters on the pyrrole-DNA modified BDD electrode were investigated. A sensitive cyclic voltammetric response for CL was obtained in a linear range from 3.4×10-6 to 5×10-4 mol/L with a detection limit of 8.5×10-7 mol/L. A mean recovery of 102.7% of CL in the pig liver sample solution and a reproducibility of 3.2% were obtained.

  15. Biological applications of nanocrystalline diamond

    OpenAIRE

    Williams, Oliver; Daenen, Michael; Haenen, Ken

    2007-01-01

    Nanocrystalline diamond films have generated substantial interest in recent years due to their low cost, extreme properties and wide application arena. Diamond is chemically inert, has a wide electrochemical window and is stable in numerous harsh environments. Nanocrystalline diamond has the advantage of being readily grown on a variety of substrates at very low thickness, resulting in smooth conformal coatings with high transparency. These films can be doped from highly insulating to metalli...

  16. Evaluation of freestanding boron-doped diamond grown by chemical vapour deposition as substrates for vertical power electronic devices

    Energy Technology Data Exchange (ETDEWEB)

    Issaoui, R.; Achard, J.; Tallaire, A.; Silva, F.; Gicquel, A. [LSPM-CNRS (formerly LIMHP), Universite Paris 13, 99, Avenue Jean-Baptiste Clement, 93430 Villetaneuse (France); Bisaro, R.; Servet, B.; Garry, G. [Thales Research and Technology France, Campus de Polytechnique, 1 Avenue Augustin Fresnel, F-91767 Palaiseau Cedex (France); Barjon, J. [GEMaC-CNRS, Universite de Versailles Saint Quentin Batiment Fermat, 45 Avenue des Etats-Unis, 78035 Versailles Cedex (France)

    2012-03-19

    In this study, 4 x 4 mm{sup 2} freestanding boron-doped diamond single crystals with thickness up to 260 {mu}m have been fabricated by plasma assisted chemical vapour deposition. The boron concentrations measured by secondary ion mass spectroscopy were 10{sup 18} to 10{sup 20} cm{sup -3} which is in a good agreement with the values calculated from Fourier transform infrared spectroscopy analysis, thus indicating that almost all incorporated boron is electrically active. The dependence of lattice parameters and crystal mosaicity on boron concentrations have also been extracted from high resolution x-ray diffraction experiments on (004) planes. The widths of x-ray rocking curves have globally shown the high quality of the material despite a substantial broadening of the peak, indicating a decrease of structural quality with increasing boron doping levels. Finally, the suitability of these crystals for the development of vertical power electronic devices has been confirmed by four-point probe measurements from which electrical resistivities as low as 0.26 {Omega} cm have been obtained.

  17. Nanocrystalline diamond films for biomedical applications

    DEFF Research Database (Denmark)

    Pennisi, Cristian Pablo; Alcaide, Maria

    2014-01-01

    Nanocrystalline diamond films, which comprise the so called nanocrystalline diamond (NCD) and ultrananocrystalline diamond (UNCD), represent a class of biomaterials possessing outstanding mechanical, tribological, and electrical properties, which include high surface smoothness, high corrosion re...

  18. Square-Wave Voltammetric Determination of Antihistaminic Drug Hydroxyzine in Pharmaceuticals Using a Boron-doped Diamond Electrode

    Directory of Open Access Journals (Sweden)

    Jessica Scremin

    2016-07-01

    Full Text Available The determination of antihistaminic hydroxyzine using square-wave voltammetry and a cathodically pretreated boron-doped diamond electrode is described. The obtained analytical curve was linear in the hydroxyzine concentration range 0.50 – 20.0 mmol L–1 in 0.1 mol L–1 HCl solution, with a detection limit of 0.43 mmol L–1. Addition and recovery studies in commercial tables and liquid formulations showed excellent recovery values ranging from 94.3 % to 104 %. Furthermore, the proposed method was successfully applied in the determination of hydroxyzine in several pharmaceutical formulations and the results were in a close agreement at a 95 % confidence level with those obtained using an official potentiometric method. DOI: http://dx.doi.org/10.17807/orbital.v8i3.833

  19. In vivo pH monitoring using boron doped diamond microelectrode and silver needles: application to stomach disorder diagnosis.

    Science.gov (United States)

    Fierro, Stéphane; Seishima, Ryo; Nagano, Osamu; Saya, Hideyuki; Einaga, Yasuaki

    2013-11-19

    This study presents the in vivo electrochemical monitoring of pH using boron doped diamond (BDD) microelectrode and silver needles for potential application in medical diagnosis. Accurate calibration curve for pH determination were obtained through in vitro electrochemical measurements. The increase induced in stomach pH by treatment with pantoprazole was used to demonstrate that it is possible to monitor the pH in vivo using the simple and noninvasive system proposed herein. Using the results of the in vivo and in vitro experiments, a quantitative analysis of the increase in stomach pH is also presented. It is proposed that the catheter-free pH monitoring system presented in this study could be potentially employed in any biological environment.

  20. Enhanced selectivity of boron doped diamond electrodes for the detection of dopamine and ascorbic acid by increasing the film thickness

    Science.gov (United States)

    Qi, Yao; Long, Hangyu; Ma, Li; Wei, Quiping; Li, Site; Yu, Zhiming; Hu, Jingyuan; Liu, Peizhi; Wang, Yijia; Meng, Lingcong

    2016-12-01

    In this paper, boron doped diamond (BDD) with different thickness were prepared by hot filament chemical vapor deposition. The performance of BDD electrodes for detecting dopamine (DA) and ascorbic acid (AA) were investigated. Scanning electron microscopy and Raman spectra reveal the grain size increases and the film quality improves with the increase of film thickness. Electrochemical test show that the transfer coefficient in [Fe3 (CN) 6]3-/4- redox system increases with the increase of the film thickness. The results of selectivity and sensitivity for DA mixed with AA detection show that 8h-BDD and 12h-BDD electrodes possess well selective separated oxidation peaks of DA and AA, and the 12h-BDD electrode exhibits optimal sensitivity until the DA concentration drops to 1 μ M.

  1. Boron doped diamond thin films on large area Ti6Al4V substrates for electrochemical application

    Directory of Open Access Journals (Sweden)

    Alessandra V. Diniz

    2003-01-01

    Full Text Available Boron doped diamond thin films were grown on titanium alloy substrates (Ti6Al4V with 36 × 35 × 1.3 mm at 873-933 K at 6.5 × 10³ Pa during 8 h by hot filament CVD assisted technique. The boron source was obtained from a H2 line forced to pass through a bubbler containing B2O3 dissolved in methanol (BC = 6000 ppm. The films were grown on both sides of perforated and non-perforated substrates. Emphasis for diamond growing on perforated substrates have been done in order to increase the active surface area and hereafter to promote an easier electrolyte flow for wastewater treatment. The electrode performance was determined by cyclic voltammetry measurements in KCl, KNO3, Na2SO4, HCl, HNO3 and H2SO4 solutions and the reversibility behavior of the Fe(CN6(3-/4- at the Ti6Al4V/Diamond electrode were studied. Also, Scaning Electron Microcopy and Raman Scattering Spectroscopy were used for morphology and diamond quality evaluation, respectively.

  2. Size-Dependent Electrocatalytic Activity of Gold Nanoparticles on HOPG and Highly Boron-Doped Diamond Surfaces

    Directory of Open Access Journals (Sweden)

    Tine Brülle

    2011-12-01

    Full Text Available Gold nanoparticles were prepared by electrochemical deposition on highly oriented pyrolytic graphite (HOPG and boron-doped, epitaxial 100-oriented diamond layers. Using a potentiostatic double pulse technique, the average particle size was varied in the range from 5 nm to 30 nm in the case of HOPG as a support and between < 1 nm and 15 nm on diamond surfaces, while keeping the particle density constant. The distribution of particle sizes was very narrow, with standard deviations of around 20% on HOPG and around 30% on diamond. The electrocatalytic activity towards hydrogen evolution and oxygen reduction of these carbon supported gold nanoparticles in dependence of the particle sizes was investigated using cyclic voltammetry. For oxygen reduction the current density normalized to the gold surface (specific current density increased for decreasing particle size. In contrast, the specific current density of hydrogen evolution showed no dependence on particle size. For both reactions, no effect of the different carbon supports on electrocatalytic activity was observed.

  3. The effect of substrate temperature and growth rate on the doping efficiency of single crystal boron doped diamond

    Energy Technology Data Exchange (ETDEWEB)

    Demlow, SN; Rechenberg, R; Grotjohn, T

    2014-10-01

    The substrate growth temperature dependence of the plasma gas-phase to solid-phase doping efficiency in single crystal, boron doped diamond (BDD) deposition is investigated. Single crystal diamond (SCD) is grown by microwave plasma assisted chemical vapor deposition (MPACVD) on high pressure, high temperature (HPHT) type Ib substrates. Samples are grown at substrate temperatures of 850-950 degrees C for each of five doping concentration levels, to determine the effect of the growth temperature on the doping efficiency and defect morphology. The substrate temperature during growth is shown to have a significant effect on the grown sample defect morphology, and a temperature dependence of the doping efficiency is also shown. The effect of the growth rate on the doping efficiency is discussed, and the ratio of the boron concentration in the gas phase to the flux of carbon incorporated into the solid diamond phase is shown to be a more predictive measure of the resulting boron concentration than the gas phase boron to carbon ratio that is more commonly reported. (C) 2014 Elsevier B.V. All rights reserved.

  4. Voltammetric and electrochemical impedance spectroscopy characterization of a cathodic and anodic pre-treated boron doped diamond electrode

    Energy Technology Data Exchange (ETDEWEB)

    Oliveira, S. Carlos B. [Departamento de Quimica, Faculdade de Ciencias e Tecnologia, Universidade de Coimbra, 3004-535 Coimbra (Portugal); Oliveira-Brett, Ana Maria, E-mail: brett@ci.uc.p [Departamento de Quimica, Faculdade de Ciencias e Tecnologia, Universidade de Coimbra, 3004-535 Coimbra (Portugal)

    2010-06-01

    The effect of boron doped diamond (BDD) surface termination, immediately after cathodic and anodic electrochemical pre-treatments, on the electrochemical response of a BDD electrode in aqueous media and the influence of the different supporting electrolytes utilized in these pre-treatments on the final surface termination was investigated with [Fe(CN){sub 6}]{sup 4-/3-}, as redox probe, by cyclic and differential pulse voltammetry and electrochemical impedance spectroscopy. The cyclic voltammetry results indicate that the electrochemical behavior for the redox couple [Fe(CN){sub 6}]{sup 4-/3-} is very dependent on the state of the BDD surface, and a reversible response was observed after the cathodic electrochemical pre-treatment, whereas a quasi-reversible response occurred after anodic electrochemical pre-treatment. Differential pulse voltammetry in acetate buffer also showed that the potential window is very much influenced by the electrochemical pre-treatment of the BDD surface. Electroactivity of non-diamond carbon surface species (sp{sup 2} inclusions) incorporated into the diamond structure was observed after cathodic and anodic pre-treatments. Electrochemical impedance spectroscopy confirmed the cyclic voltammetry results and indicates that the BDD surface resistance and capacitance vary significantly with the electrolyte and with the electrochemical pre-treatment, caused by different surface terminations of the BDD electrode surface.

  5. Fabrication and characterization of composite TiO{sub 2} nanotubes/boron-doped diamond electrodes towards enhanced supercapacitors

    Energy Technology Data Exchange (ETDEWEB)

    Sobaszek, M. [Department of Metrology and Optoelectronics, Faculty of Electronics, Telecommunications and Informatics, Gdańsk University of Technology, 11/12 G. Narutowicza St., 80-233 Gdańsk (Poland); Siuzdak, K.; Sawczak, M. [Centre for Plasma and Laser Engineering, The Szewalski Institute of Fluid-Flow Machinery, Polish Academy of Sciences, 14 Fiszera St., 80-231 Gdansk (Poland); Ryl, J. [Department of Electrochemistry, Corrosion and Material Engineering, Faculty of Chemistry, Gdańsk University of Technology, 11/12 G. Narutowicza St., 80-233 Gdańsk (Poland); Bogdanowicz, R., E-mail: rbogdan@eti.pg.gda.pl [Department of Metrology and Optoelectronics, Faculty of Electronics, Telecommunications and Informatics, Gdańsk University of Technology, 11/12 G. Narutowicza St., 80-233 Gdańsk (Poland)

    2016-02-29

    The composite TiO{sub 2} nanotubes/boron-doped diamond electrodes were deposited using Microwave Plasma Enhanced Chemical Vapor Deposition resulting in the improved electrochemical performance. This composite electrode can deliver high specific capacitance of 7.46 mF cm{sup −2} comparing to boron-doped diamond (BDD) deposited onto flat Ti plate (0.11 mF cm{sup −2}).The morphology and composition of composite electrode were characterized by scanning electron microscopy, Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) techniques. According to XPS and Raman analyses, the structure of TiO{sub 2} was greatly changed during Chemical Vapor Deposition process: formation of Ti{sup 3+} sites, partial anatase to rutile transformation and titanium carbide phase formation. This effect is attributed to the simultaneous presence of activated hydrogen and carbon in the plasma leading to enhanced dehydration of NTs (nanotubes) followed by carbon bonding. The enhanced capacitive effect of TiO{sub 2} NT/BDD could be recognized as: (1) the unique synergistic morphology of NTs and BDD providing more efficient conducting pathway for the diffusion of ions and (2) partial decomposition of NTs and transformation towards to TiC and Ti{sub 2}O{sub 3} fractions. Finally, highly ordered titania nanotubes produced via simply, quick and controllable method — anodization, could act as promising substrate for conductive BDD layer deposition and further application of such composites for supercapacitor construction. - Highlights: • The TiO{sub 2} nanotube (NT)/diamond electrode delivers capacitance of 7.46 mF cm{sup −2}. • The NTs are not affected by diamond growth process and keep their pristine shape. • The BDD overlayer fully encapsulates TiO{sub 2} NTs exhibiting typical columnar growth. • The activated hydrogen and carbon in the plasma lead to enhanced dehydration of NTs. • The presence of TiC and Ti{sub 2}O{sub 3} fractions introducing additional capacitance.

  6. Simultaneous voltammetric determination of paracetamol and ascorbic acid using a boron-doped diamond electrode modified with Nafion and lead films.

    Science.gov (United States)

    Tyszczuk-Rotko, Katarzyna; Bęczkowska, Ilona; Wójciak-Kosior, Magdalena; Sowa, Ireneusz

    2014-11-01

    The paper describes the fabrication and application of a novel sensor (a boron-doped diamond electrode modified with Nafion and lead films) for the simultaneous determination of paracetamol and ascorbic acid by differential pulse voltammetry. The main advantage of the lead film and polymer covered boron-doped diamond electrode is that the sensitivity of the stripping responses is increased and the separation of paracetamol and ascorbic acid signals is improved due to the modification of the boron-doped diamond surface by the lead layer. Additionally, the repeatability of paracetamol and ascorbic acid signals is improved by the application of the Nafion film coating. In the presence of oxygen, linear calibration curves were obtained in a wide concentration range from 5×10(-7) to 2×10(-4) mol L(-1) for paracetamol and from 1×10(-6) to 5×10(-4) mol L(-1) for ascorbic acid. The analytical utility of the differential pulse voltammetric method elaborated was tested in the assay of paracetamol and ascorbic acid in commercially available pharmaceutical formulations and the method was validated by high performance liquid chromatography coupled with diode array detector.

  7. Boron Doped Nanocrystalline Film with Improved Work Function as a Buffer Layer in Thin Film Silicon Solar Cells.

    Science.gov (United States)

    Park, Jinjoo; Shin, Chonghoon; Park, Hyeongsik; Jung, Junhee; Lee, Youn-Jung; Bong, Sungjae; Dao, Vinh Ai; Balaji, Nagarajan; Yi, Junsin

    2015-03-01

    We investigated thin film silicon solar cells with boron doped hydrogenated nanocrystalline silicon/ hydrogenated amorphous silicon oxide [p-type nc-Si:H/a-SiOx:H] layer. First, we researched the bandgap engineering of diborane (B2H6) doped wide bandgap hydrogenated nanocryslline silicon (p-type nc-Si:H) films, which have excellent electrical properties of high dark conductivity, and low activation energy. The films prepared with lower doping ratio and higher hydrogen dilution ratio had higher optical gap (Eg), with higher dark conductivity (σ(d)), and lower activation energy (Ea). We controlled Eg from 2.10 eV to 1.75 eV, with σ(d) from 1.1 S/cm to 7.59 x 10(-3) S/cm, and Ea from 0.040 eV to 0.128 eV. Next, we focused on the fabrication of thin film silicon solar cells. By inserting p-type nc-Si:H film into the thin film silicon solar cells, we achieved a remarkable increase in the built-in potential from 0.803 eV to 0.901 eV. By forming p-type nc-Si:H film between SnO2:F/ZnO:Al (30 nm) and p-type a-SiOx:H layer, the solar cell properties of open circuit voltage (Voc), short circuit current density (Jsc), and efficiency (η) were improved by 3.7%, 9.2%, and 9.8%, respectively.

  8. [Comparative Study of Benzotriazole Electrochemical Oxidation at Boron-doped Diamond and PbO2 Anodes].

    Science.gov (United States)

    Wu, Juan-li; Zhang, Jia-wei; Wang, Ting; Ni, Jin-ren

    2015-07-01

    Electrochemical systems were built to investigate the degradation of benzotriazole (BTA) on boron-doped diamond (BUU) and PbO2 anodes and give an insight into the mineralization ability of two electrodes in terms of the amount and activity of hydroxyl radicals. Results of bulk electrolysis showed that both BDD and PbO2 displayed perfect BTA degradation performance after 12 hours' electrolysis, with the removal percentages of 99. 48% and 98. 36%, respectively, while the mineralization ability of BDD was much stronger than that of PbO2, with the efficiency of 87. 69% for BDD and 35. 96% for PbO2. Less hydroxyl radical and hydrogen production in BDD system suggested the less amount of active sites on BDD surface, thus further verified that the generated hydroxyl radical amount was not the primary factor determining the mineralization ability of anodes. However, BDD displayed larger binding energy of adsorbed oxygen and thinner adsorption layer than those of PbO2, indicating that the BDD electrode surface was of greater catalytic activity, thus the generated hydroxyl radicals were more free, which was the key to its better mineralization ability.

  9. Anodic oxidation of ketoprofen-An anti-inflammatory drug using boron doped diamond and platinum electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Murugananthan, M., E-mail: muruga.chem@gmail.com [National Metallurgical Laboratory Madras Centre, CSIR Madras Complex, Taramani, Chennai 600 113 (India); Latha, S.S.; Bhaskar Raju, G. [National Metallurgical Laboratory Madras Centre, CSIR Madras Complex, Taramani, Chennai 600 113 (India); Yoshihara, S. [Department of Advanced Interdisciplinary Science, Graduate School of Engineering, Utsunomiya University, 7-1-2 Yoto, Utsunomiya, Tochigi 321-8585 (Japan)

    2010-08-15

    The mineralization of ketoprofen (KP) by anodic oxidation was studied by employing boron doped diamond (BDD) and Pt electrodes. The redox behavior of KP molecule, fouling of electrodes, generation of oxygen and active chlorine species were studied by cyclic voltammetry. The effect of electrolyte, pH of aqueous medium and applied current density on the mineralization behavior of KP was also investigated. The degradation and mineralization were monitored by UV-vis spectrophotometer and total organic carbon analyzer, respectively. The results were explained in terms of in situ generation of hydroxyl radical ({center_dot}OH), peroxodisulfate (S{sub 2}O{sub 8}{sup 2-}), and active chlorine species (Cl{sub 2}, HOCl, OCl{sup -}). The physisorbed {center_dot}OH on BDD was observed to trigger the combustion of KP in to CO{sub 2} and H{sub 2}O. The poor mineralization at both BDD and Pt anodes in the presence of NaCl as supporting electrolyte was ascribed to the formation of chlorinated organic compounds which are refractory. Complete mineralization of KP molecule was achieved using Na{sub 2}SO{sub 4} as supporting electrolyte.

  10. Anodic stripping voltammetry of gold nanoparticles at boron-doped diamond electrodes and its application in immunochromatographic strip tests.

    Science.gov (United States)

    Ivandini, Tribidasari A; Wicaksono, Wiyogo P; Saepudin, Endang; Rismetov, Bakhadir; Einaga, Yasuaki

    2015-03-01

    Anodic stripping voltammetry (ASV) of colloidal gold-nanoparticles (AuNPs) was investigated at boron-doped diamond (BDD) electrodes in 50 mM HClO4. A deposition time of 300 s at-0.2 V (vs. Ag/AgCl) was fixed as the condition for the ASV. The voltammograms showed oxidation peaks that could be attributed to the oxidation of gold. These oxidation peaks were then investigated for potential application in immunochromatographic strip tests for the selective and quantitative detection of melamine, in which AuNPs were used as the label for the antibody of melamine. Linear regression of the oxidation peak currents appeared in the concentration range from 0.05-0.6 μg/mL melamine standard, with an estimated LOD of 0.069 μg/mL and an average relative standard deviation of 8.0%. This indicated that the method could be considered as an alternative method for selective and quantitative immunochromatographic applications. The validity was examined by the measurements of melamine injected into milk samples, which showed good recovery percentages during the measurements.

  11. Determination of vanillin in commercial food product by adsorptive stripping voltammetry using a boron-doped diamond electrode.

    Science.gov (United States)

    Yardım, Yavuz; Gülcan, Mehmet; Şentürk, Zühre

    2013-12-01

    A method for the determination of food additive vanillin was developed by adsorptive stripping voltammetry. Its determination was carried out at the anodically pre-treated boron-doped diamond electrode in aqueous solutions. Using square-wave stripping mode, the compound yielded a well-defined voltammetric response in phosphate buffer, pH 2.5 at +1.14 V (vs. Ag/AgCl) (a pre-concentration step being carried out at open-circuit condition for 60s). A linear calibration graph was obtained in the concentration range of 0.5-15.0 μg mL(-1) (3.3×10(-6)-9.8×10(-5) mol L(-1)) with a detection limit of 0.024 μg mL(-1) (1.6×10(-7) mol L(-1)). As an example, the practical applicability of the proposed method was tested for the determination of this flavouring agent in commercial pudding powder of Keshkule (Turkish milk pudding with almond flour).

  12. Boron doped diamond sensor for sensitive determination of metronidazole: Mechanistic and analytical study by cyclic voltammetry and square wave voltammetry.

    Science.gov (United States)

    Ammar, Hafedh Belhadj; Brahim, Mabrouk Ben; Abdelhédi, Ridha; Samet, Youssef

    2016-02-01

    The performance of boron-doped diamond (BDD) electrode for the detection of metronidazole (MTZ) as the most important drug of the group of 5-nitroimidazole was proven using cyclic voltammetry (CV) and square wave voltammetry (SWV) techniques. A comparison study between BDD, glassy carbon and silver electrodes on the electrochemical response was carried out. The process is pH-dependent. In neutral and alkaline media, one irreversible reduction peak related to the hydroxylamine derivative formation was registered, involving a total of four electrons. In acidic medium, a prepeak appears probably related to the adsorption affinity of hydroxylamine at the electrode surface. The BDD electrode showed higher sensitivity and reproducibility analytical response, compared with the other electrodes. The higher reduction peak current was registered at pH11. Under optimal conditions, a linear analytical curve was obtained for the MTZ concentration in the range of 0.2-4.2μmolL(-1), with a detection limit of 0.065μmolL(-1).

  13. Oxidation of carbon monoxide, hydrogen peroxide and water at a boron doped diamond electrode: the competition for hydroxyl radicals.

    Science.gov (United States)

    Kisacik, Izzet; Stefanova, Ana; Ernst, Siegfried; Baltruschat, Helmut

    2013-04-07

    Boron doped diamond (BDD) electrodes have an extremely high over-voltage for oxygen evolution from water, which favours its use in oxidation processes of other compounds at high potentials. We used a rotating ring disc (RRDE) assembly and differential electrochemical mass spectrometry (DEMS) in order to monitor the consumption or the production of species in the course of the electrode processes. By intercepting the intermediate of the electrochemical water oxidation with chemical reactions we demonstrate clearly, albeit indirectly, that in the water oxidation process at BDD above 2.5 V the first step is the formation of ˙OH radicals. The electro-oxidation of CO to CO2 at BDD electrodes proceeds only via a first attack by ˙OH radicals followed by a further electron transfer to the electrode. At potentials below the onset of oxygen evolution from water, H2O2 is oxidised by a direct electron transfer to the BDD electrode, while at higher potentials, two different reactions paths compete for the ˙OH radicals formed in the first electron transfer from water: one, where these ˙OH radicals react with each other followed by further electron transfers leading to O2 on the one hand and one, where ˙OH radicals react with other species like H2O2 or CO with subsequent electron transfers on the other hand.

  14. Simultaneous determination of paracetamol and ibuprofen in pharmaceutical samples by differential pulse voltammetry using a boron-doped diamond electrode

    Energy Technology Data Exchange (ETDEWEB)

    Lima, Amanda B.; Guimaraes, Carlos F.R.C.; Verly, Rodrigo M.; Silva, Leonardo M. da [Universidade Federal dos Vales do Jequitinhonha e Mucuri (UFVJM), Diamantina, MG (Brazil). Departamento de Quimica; Torres, Livia M.F.C.; Carvalho Junior, Alvaro D.; Santos, Wallans T. P. dos, E-mail: wallanst@ufvjm.edu.br [Universidade Federal dos Vales do Jequitinhonha e Mucuri (UFVJM), Diamantina, MG (Brazil). Departamento de Farmacia

    2014-03-15

    This work presents a simple, fast and low-cost methodology for the simultaneous determination of paracetamol (PC) and ibuprofen (IB) in pharmaceutical formulations by differential pulse voltammetry using a boron-doped diamond (BDD) electrode. A well-defined oxidation peak was observed using the BDD electrode for each analyte (0.85 V for PC and 1.72 V for IB (vs. Ag/AgCl)) in 0.1 mol L{sup -1} H{sub 2}SO{sub 4} solution containing 10% (v/v) of ethanol. Calibration curves for the simultaneous determination of PC and IB showed a linear response for both drugs in a concentration range of 20 to 400 μmol L{sup -1} (r{sup 2} = 0.999), with a detection limit of 7.1 μmol L{sup -1} for PC and 3.8 μmol L{sup -1} for IB. The addition-recovery studies in samples were about 100% and the results were validated by chromatographic methods. (author)

  15. Biofouling resistance of boron-doped diamond neural stimulation electrodes is superior to titanium nitride electrodes in vivo

    Science.gov (United States)

    Meijs, S.; Alcaide, M.; Sørensen, C.; McDonald, M.; Sørensen, S.; Rechendorff, K.; Gerhardt, A.; Nesladek, M.; Rijkhoff, N. J. M.; Pennisi, C. P.

    2016-10-01

    Objective. The goal of this study was to assess the electrochemical properties of boron-doped diamond (BDD) electrodes in relation to conventional titanium nitride (TiN) electrodes through in vitro and in vivo measurements. Approach. Electrochemical impedance spectroscopy, cyclic voltammetry and voltage transient (VT) measurements were performed in vitro after immersion in a 5% albumin solution and in vivo after subcutaneous implantation in rats for 6 weeks. Main results. In contrast to the TiN electrodes, the capacitance of the BDD electrodes was not significantly reduced in albumin solution. Furthermore, BDD electrodes displayed a decrease in the VTs and an increase in the pulsing capacitances immediately upon implantation, which remained stable throughout the whole implantation period, whereas the opposite was the case for the TiN electrodes. Significance. These results reveal that BDD electrodes possess a superior biofouling resistance, which provides significantly stable electrochemical properties both in protein solution as well as in vivo compared to TiN electrodes.

  16. Electrochemical Sensing and Assessment of Parabens in Hydro- Alcoholic Solutions and Water Using a Boron-Doped Diamond Electrode

    Directory of Open Access Journals (Sweden)

    Vasile Ostafe

    2008-07-01

    Full Text Available In this paper, the electrochemical behaviour of several parabens preservatives, i.e. esters of p-hydroxybenzoic acid, methyl-, ethyl- and propyl-4-hydroxybenzoates as methyl-, ethyl- and propyl-parabens (MB, EB, and PB, has been investigated at a commercial boron-doped diamond electrode (BDDE, especially in the anodic potential range, in both hydro-alcoholic and aqueous media. The cyclic voltammetric and chronoamperometric measurements yielded calibration plots with very good linearity (R2 between 0.990 and 0.998 and high sensitivity, useful for detection and analytical applications. The determination of the characteristics of individual compounds, of an “overall paraben index”, the assessment of the stability and the saturation solubility in water, and the amperometric sensing and determination in double distilled, tap and river water matrix of the relatively slightly soluble investigated parabens have been carried out using electrochemical alternative. Estimated water solubility was correlated with the octanol-water partition coefficient. Several ideas regarding stability and persistence of the presumptive eco-toxic investigated preservatives in the environment or water systems have been adjacently discussed.

  17. Electrochemical Sensing and Assessment of Parabens in Hydro- Alcoholic Solutions and Water Using a Boron-Doped Diamond Electrode.

    Science.gov (United States)

    Radovan, Ciprian; Cinghită, Dan; Manea, Florica; Mincea, Manuela; Cofan, Codruta; Ostafe, Vasile

    2008-07-25

    In this paper, the electrochemical behaviour of several parabens preservatives, i.e. esters of p-hydroxybenzoic acid, methyl-, ethyl- and propyl-4-hydroxybenzoates as methyl-, ethyl- and propyl-parabens (MB, EB, and PB), has been investigated at a commercial boron-doped diamond electrode (BDDE), especially in the anodic potential range, in both hydro-alcoholic and aqueous media. The cyclic voltammetric and chronoamperometric measurements yielded calibration plots with very good linearity (R2 between 0.990 and 0.998) and high sensitivity, useful for detection and analytical applications. The determination of the characteristics of individual compounds, of an "overall paraben index", the assessment of the stability and the saturation solubility in water, and the amperometric sensing and determination in double distilled, tap and river water matrix of the relatively slightly soluble investigated parabens have been carried out using electrochemical alternative. Estimated water solubility was correlated with the octanol-water partition coefficient. Several ideas regarding stability and persistence of the presumptive eco-toxic investigated preservatives in the environment or water systems have been adjacently discussed.

  18. Highly sensitive detection of influenza virus by boron-doped diamond electrode terminated with sialic acid-mimic peptide.

    Science.gov (United States)

    Matsubara, Teruhiko; Ujie, Michiko; Yamamoto, Takashi; Akahori, Miku; Einaga, Yasuaki; Sato, Toshinori

    2016-08-09

    The progression of influenza varies according to age and the presence of an underlying disease; appropriate treatment is therefore required to prevent severe disease. Anti-influenza therapy, such as with neuraminidase inhibitors, is effective, but diagnosis at an early phase of infection before viral propagation is critical. Here, we show that several dozen plaque-forming units (pfu) of influenza virus (IFV) can be detected using a boron-doped diamond (BDD) electrode terminated with a sialic acid-mimic peptide. The peptide was used instead of the sialyloligosaccharide receptor, which is the common receptor of influenza A and B viruses required during the early phase of infection, to capture IFV particles. The peptide, which was previously identified by phage-display technology, was immobilized by click chemistry on the BDD electrode, which has excellent electrochemical characteristics such as low background current and weak adsorption of biomolecules. Electrochemical impedance spectroscopy revealed that H1N1 and H3N2 IFVs were detectable in the range of 20-500 pfu by using the peptide-terminated BDD electrode. Our results demonstrate that the BDD device integrated with the receptor-mimic peptide has high sensitivity for detection of a low number of virus particles in the early phase of infection.

  19. An aptasensor for ochratoxin A based on grafting of polyethylene glycol on a boron-doped diamond microcell.

    Science.gov (United States)

    Chrouda, A; Sbartai, A; Baraket, A; Renaud, L; Maaref, A; Jaffrezic-Renault, N

    2015-11-01

    A novel strategy for the fabrication of an electrochemical label-free aptasensor for small-size molecules is proposed and demonstrated as an aptasensor for ochratoxin A (OTA). A long spacer chain of polyethylene glycol (PEG) was immobilized on a boron-doped diamond (BDD) microcell via electrochemical oxidation of its terminal amino groups. The amino-aptamer was then covalently linked to the carboxyl end of the immobilized PEG as a two-piece macromolecule, autoassembled at the BDD surface, forming a dense layer. Due to a change in conformation of the aptamer on the target analyte binding, a decrease of the electron transfer rate of the redox [Fe(CN)6](4-/3-) probe was observed. To quantify the amount of OTA, the decrease of the square wave voltammetry (SWV) peak maximum of this probe was monitored. The plot of the peak maximum against the logarithm of OTA concentration was linear along the range from 0.01 to 13.2 ng/L, with a detection limit of 0.01 ng/L. This concept was validated on spiked real samples of rice.

  20. Simultaneous square-wave voltammetric determination of aspartame and cyclamate using a boron-doped diamond electrode.

    Science.gov (United States)

    Medeiros, Roberta Antigo; de Carvalho, Adriana Evaristo; Rocha-Filho, Romeu C; Fatibello-Filho, Orlando

    2008-07-30

    A simple and highly selective electrochemical method was developed for the simultaneous determination of aspartame and cyclamate in dietary products at a boron-doped diamond (BDD) electrode. In square-wave voltammetric (SWV) measurements, the BDD electrode was able to separate the oxidation peak potentials of aspartame and cyclamate present in binary mixtures by about 400 mV. The detection limit for aspartame in the presence of 3.0x10(-4) mol L(-1) cyclamate was 4.7x10(-7) mol L(-1), and the detection limit for cyclamate in the presence of 1.0x10(-4) mol L(-1) aspartame was 4.2x10(-6) mol L(-1). When simultaneously changing the concentration of both aspartame and cyclamate in a 0.5 mol L(-1) sulfuric acid solution, the corresponding detection limits were 3.5x10(-7) and 4.5x10(-6) mol L(-1), respectively. The relative standard deviation (R.S.D.) obtained was 1.3% for the 1.0x10(-4) mol L(-1) aspartame solution (n=5) and 1.1% for the 3.0x10(-3) mol L(-1) cyclamate solution. The proposed method was successfully applied in the determination of aspartame in several dietary products with results similar to those obtained using an HPLC method at 95% confidence level.

  1. Toward high-throughput screening of NAD(P)-dependent oxidoreductases using boron-doped diamond microelectrodes and microfluidic devices.

    Science.gov (United States)

    Oyobiki, Ryo; Kato, Taisuke; Katayama, Michinobu; Sugitani, Ai; Watanabe, Takeshi; Einaga, Yasuaki; Matsumoto, Yoshinori; Horisawa, Kenichi; Doi, Nobuhide

    2014-10-07

    Although oxidoreductases are widely used in many applications, such as biosensors and biofuel cells, improvements in the function of existing oxidoreductases or the discovery of novel oxidoreductases with greater activities is desired. To increase the activity of oxidoreductases by directed evolution, a powerful screening technique for oxidoreductases is required. In this study, we demonstrate the utility of boron-doped diamond (BDD) microelectrodes for quantitative and potentially high-throughput measurement of the activity of NAD(P)-dependent oxidoreductases. We first confirmed that BDD microelectrodes can quantify the activity of low concentrations (10-100 pM) of glucose-6-phosphate dehydrogenase and alcohol dehydrogenase with a measuring time of 1 ms per sample. In addition, we found that poisoning of BDD microelectrodes can be repressed by optimizing the pH and by adding l-arginine to the enzyme solution as an antiaggregation agent. Finally, we fabricated a microfluidic device containing a BDD electrode for the first time and observed the elevation of the oxidation current of NADH with increasing flow rate. These results imply that the combination of a BDD microelectrode and microfluidics can be used for high-throughput screening of an oxidoreductase library containing a large number (>10(6)) of samples, each with a small (nanoliter) sample volume.

  2. Synergetic antibacterial activity of reduced graphene oxide and boron doped diamond anode in three dimensional electrochemical oxidation system

    Science.gov (United States)

    Qi, Xiujuan; Wang, Ting; Long, Yujiao; Ni, Jinren

    2015-05-01

    A 100% increment of antibacterial ability has been achieved due to significant synergic effects of boron-doped diamond (BDD) anode and reduced graphene oxide (rGO) coupled in a three dimensional electrochemical oxidation system. The rGO, greatly enhanced by BDD driven electric field, demonstrated strong antibacterial ability and even sustained its excellent performance during a reasonable period after complete power cut in the BDD-rGO system. Cell damage experiments and TEM observation confirmed much stronger membrane stress in the BDD-rGO system, due to the faster bacterial migration and charge transfer by the expanded electro field and current-carrying efficiency by quantum tunnel. Reciprocally the hydroxyl-radical production was eminently promoted with expanded area of electrodes and delayed recombination of the electron-hole pairs in presence of the rGO in the system. This implied a huge potential for practical disinfection with integration of the promising rGO and the advanced electrochemical oxidation systems.

  3. Electrochemical disinfection using boron-doped diamond electrode--the synergetic effects of in situ ozone and free chlorine generation.

    Science.gov (United States)

    Rajab, Mohamad; Heim, Carolin; Letzel, Thomas; Drewes, Jörg E; Helmreich, Brigitte

    2015-02-01

    This work investigated the capability of using a boron-doped diamond (BDD) electrode for bacterial disinfection in different water matrices containing varying amounts of chloride. The feed water containing Pseudomonas aeruginosa was electrochemically treated while applying different electrode conditions. Depending on the applied current density and the exposure time, inactivation between 4- and 8-log of the targeted microorganisms could be achieved. The disinfection efficiency was driven by the generation of free chlorine as a function of chloride concentration in the water. A synergetic effect of generating both free chlorine and ozone in situ during the disinfection process resulted in an effective bactericidal impact. The formation of the undesired by-products chlorate and perchlorate depended on the water matrix, the applied current density and the desired target disinfection level. In case of synthetic water with a low chloride concentration (20 mg L(-1)) and an applied current density of 167 mA cm(-2), a 6-log inactivation of Pseudomonas aeruginosa could be achieved after 5 min of exposure. The overall energy consumption ranged between 0.3 and 0.6 kW h m(-3) depending on the applied current density and water chemistry. Electrochemical water disinfection represents a suitable and efficient process for producing pathogen-free water without the use of any chemicals.

  4. Determination of propylthiouracil in pharmaceuticals by differential pulse voltammetry using a cathodically pretreated boron-doped diamond electrode

    Energy Technology Data Exchange (ETDEWEB)

    Sartori, Elen Romao [Universidade Estadual de Londrina, PR (Brazil). Dept. de Quimica; Trench, Aline Barrios; Rocha-Filho, Romeu C.; Fatibello-Filho, Orlando, E-mail: bello@ufscar.br [Universidade Federal de Sao Carlos (UFSCAR), SP (Brazil). Dept. de Quimica

    2013-09-15

    A simple procedure is described for the determination of propylthiouracil (PTU) by differential pulse voltammetry (DPV) using a cathodically pretreated boron-doped diamond (BDD) electrode. Cyclic voltammetry studies indicate that the oxidation of PTU is irreversible at a peak potential of 1.42 V (vs. Ag/AgCl (3.0 mol L{sup -1} KCl)) in a Britton-Robinson (BR) buffer solution (pH 2.0). Under optimized conditions, the obtained analytical curve was linear (r = 0.9985) for the PTU concentration range of 1.0 to 29.1 {mu}mol L{sup -1} in a BR buffer solution (pH 2.0), with a detection limit of 0.90 {mu}mol L{sup -1}. The proposed method was successfully applied in the determination of PTU in pharmaceutical samples, with results in agreement at a 95% confidence level with those obtained using an official titration method. (author)

  5. Electrophoretic analysis of biomarkers using capillary modification with gold nanoparticles embedded in a polycation and boron doped diamond electrode.

    Science.gov (United States)

    Zhou, Lin; Glennon, Jeremy D; Luong, John H T

    2010-08-15

    Field-amplified sample stacking using a fused silica capillary coated with gold nanoparticles (AuNPs) embedded in poly(diallyl dimethylammonium) chloride (PDDA) has been investigated for the electrophoretic separation of indoxyl sulfate, homovanillic acid (HVA), and vanillylmandelic acid (VMA). AuNPs (27 nm) exhibit ionic and hydrophobic interactions, as well as hydrogen bonding with the PDDA network to form a stable layer on the internal wall of the capillary. This approach reverses electro-osmotic flow allowing for fast migration of the analytes while retarding other endogenous compounds including ascorbic acid, uric acid, catecholamines, and indoleamines. Notably, the two closely related biomarkers of clinical significance, HVA and VMA, displayed differential interaction with PDDA-AuNPs which enabled the separation of this pair. The detection limit of the three analytes obtained by using a boron doped diamond electrode was approximately 75 nM, which was significantly below their normal physiological levels in biological fluids. This combined separation and detection scheme was applied to the direct analysis of these analytes and other interfering chemicals including uric and ascorbic acids in urine samples without off-line sample treatment or preconcentration.

  6. Pilot scale performance of the electro-oxidation of landfill leachate at boron-doped diamond anodes.

    Science.gov (United States)

    Anglada, Angela; Urtiaga, Ane; Ortiz, Inmaculada

    2009-03-15

    During the electrochemical oxidation of real wastewaters, the different species present in the effluent may interact creating complex scenarios making the prediction of the behavior of the whole system difficult. In this paper the different phenomena that occur during the electro-oxidation process of landfill leachate at a pilot plant scale with boron-doped diamond (BDD) anodes are elucidated. The total BDD anode area of the pilot plant was 1.05 m2. The evolution of the concentration of chloride ions, chlorate, and inorganic carbon and the value of pH and redox potential were found to be inter-related. In turn, the concentration of chloride affected the oxidation of ammonia, which took place through indirect oxidation by active chlorine. Moreover, chloride ions competed with organic matter to be oxidized at the anode. The effect of current density was also investigated. Organic matter and ammonia oxidation were highly influenced by the applied current density value. A change in the mechanism of organic matter oxidation was observed when high current densities were applied. Two mathematical models, previously applied to the oxidation of synthetic wastewaters in the literature, were able to predict the evolution of chemical oxygen demand and ammonia for low current density values.

  7. Mineralization of the recalcitrant oxalic and oxamic acids by electrochemical advanced oxidation processes using a boron-doped diamond anode.

    Science.gov (United States)

    Garcia-Segura, Sergi; Brillas, Enric

    2011-04-01

    Oxalic and oxamic acids are the ultimate and more persistent by-products of the degradation of N-aromatics by electrochemical advanced oxidation processes (EAOPs). In this paper, the kinetics and oxidative paths of these acids have been studied for several EAOPs using a boron-doped diamond (BDD) anode and a stainless steel or an air-diffusion cathode. Anodic oxidation (AO-BDD) in the presence of Fe(2+) (AO-BDD-Fe(2+)) and under UVA irradiation (AO-BDD-Fe(2+)-UVA), along with electro-Fenton (EF-BDD), was tested. The oxidation of both acids and their iron complexes on BDD was clarified by cyclic voltammetry. AO-BDD allowed the overall mineralization of oxalic acid, but oxamic acid was removed much more slowly. Each acid underwent a similar decay in AO-BDD-Fe(2+) and EF-BDD, as expected if its iron complexes were not attacked by hydroxyl radicals in the bulk. The faster and total mineralization of both acids was achieved in AO-BDD-Fe(2+)-UVA due to the high photoactivity of their Fe(III) complexes that were continuously regenerated by oxidation of their Fe(II) complexes. Oxamic acid always released a larger proportion of NH(4)(+) than NO(3)(-) ion, as well as volatile NO(x) species. Both acids were independently oxidized at the anode in AO-BDD, but in AO-BDD-Fe(2+)-UVA oxamic acid was more slowly degraded as its content decreased, without significant effect on oxalic acid decay. The increase in current density enhanced the oxidation power of the latter method, with loss of efficiency. High Fe(2+) contents inhibited the oxidation of Fe(II) complexes by the competitive oxidation of Fe(2+) to Fe(3+). Low current densities and Fe(2+) contents are preferable to remove more efficiently these acids by the most potent AO-BDD-Fe(2+)-UVA method.

  8. Determination of parabens in shampoo using high performance liquid chromatography with amperometric detection on a boron-doped diamond electrode.

    Science.gov (United States)

    Martins, Isarita; Carreira, Franciely Cristiani; Canaes, Larissa S; de Souza Campos Junior, Francisco Alberto; da Silva Cruz, Letícia Maria; Rath, Susanne

    2011-07-15

    Methylparaben (MePa), ethylparaben (EtPa) and propylparaben (PrPa) have been widely used, among others, as chemical preservatives in cosmetics, drugs and foods. As these compounds are linked with allergies, dermatitis and estrogenic properties, it is necessary to control the concentration of these substances in different matrices. The aim of this paper are: to evaluate the electrochemical behavior of parabens on the boron-doped diamond (BDD) electrode and the development of a chromatographic method, with electrochemical detection (HPLC-ED), for determination of parabens in shampoo. A BDD (8000 ppm) electrode was adapted in a thin layer mode analytical cell consisting of a stainless steel and a platinum wire as reference and auxiliary electrodes, respectively. Chromatographic separations were obtained with a reversed phase C8 analytical column and a mobile phase of 0.025 molL(-1) disodium phosphate, pH 7.0, and acetonitrile (40:60, v/v), delivered at a flow rate of 1.0 mL min(-1). Sample preparation was performed by solid phase extraction using C18 cartridges and acetonitrile for elution. Benzylparaben was employed as internal standard. The HPLC-ED method developed, using the BDD electrode, was validated for the determination of parabens in shampoos and presented adequate linearity (>0.999), in the range of 0.0125-0.500% (w/w), detectability 0.01% (w/w), precision (RSD of 2.3-9.8%) and accuracy (93.1-104.4%) and could be applied for routine quality control of shampoos containing MePa, EtPa and PrPa.

  9. Assessments of the Effect of Increasingly Severe Cathodic Pretreatments on the Electrochemical Activity of Polycrystalline Boron-Doped Diamond Electrodes.

    Science.gov (United States)

    Brocenschi, Ricardo F; Hammer, Peter; Deslouis, Claude; Rocha-Filho, Romeu C

    2016-05-17

    The electrochemical response of many redox species on boron-doped diamond (BDD) electrodes can be strongly dependent on the type of chemical termination on their surface, hydrogen (HT-BDD) or oxygen (OT-BDD). For instance, on an HT-BDD electrode the [Fe(CN)6](3-/4-) redox system presents a reversible voltammetric behavior, whereas the oxidation overpotential of ascorbic acid (AA) is significantly decreased. Moreover, the electrochemical activity of BDD electrodes can be significantly affected by electrochemical pretreatments, with cathodic pretreatments (CPTs) leading to redox behaviors associated with HT-BDD. Here we report on the effect of increasingly severe CPTs on the electrochemical activity of a highly doped BDD electrode, assessed with the [Fe(CN)6](3-/4-) and AA redox probes, and on the atomic bonding structure on the BDD surface, assessed by XPS. The hydrogenation level of the BDD surface was increased by CPTs, leading to decreases of the total relative level of oxidation of the BDD surface of up to 36%. Contrary to what is commonly assumed, we show that BDD surfaces do not need to be highly hydrogenated to ensure that a reversible voltammetric behavior is obtained for Fe(CN)6](3-/4-); after a CPT, this was attained even when the total relative level of oxidation on the BDD surface was about 15%. At the same time, the overpotential for AA oxidation was confirmed as being very sensitive to the level of oxidation of the BDD surface, a behavior that might allow the use of AA as a secondary indicator of the relative atomic bonding structure on the BDD surface.

  10. Influences of H+ Implantation on the Boron-Doped Synthesized by Chemical Vapor Deposition Diamond Films

    Institute of Scientific and Technical Information of China (English)

    WANG Shuang-Bao

    2000-01-01

    Diamond films (DF) were preliminarily B doped in situ during chemical vapor deposition. Subsequently, the films were implanted with 120keV H+ to dose of 5 × 1014 ~ 5 × 1016cm-2. After the implantation, the B doped DF become insulating and Raman measurements indicate that the implantation has amorphous carbon and graphite etched. It is known that the formation of H-B pairs plays an important pole in property changes. However, for larger dose cases, the electrical resistance of DF is influenced by radiation damage and/or non-diamond phases. In addition to them, annealing makes the specimens conducting again. This phenomenon maybe has potential for application in designing DF device.

  11. Amperometric Determination of Sulfite by Gas Diffusion-Sequential Injection with Boron-Doped Diamond Electrode

    OpenAIRE

    Orawon Chailapakul; Toshihiko Imato; Narong Praphairaksit; Kulwadee Pinwattana; Chakorn Chinvongamorn

    2008-01-01

    A gas diffusion sequential injection system with amperometric detection using aboron-doped diamond electrode was developed for the determination of sulfite. A gasdiffusion unit (GDU) was used to prevent interference from sample matrices for theelectrochemical measurement. The sample was mixed with an acid solution to generategaseous sulfur dioxide prior to its passage through the donor channel of the GDU. Thesulfur dioxide diffused through the PTFE hydrophobic membrane into a carrier solution...

  12. Anodic behavior of sertindole and its voltammetric determination in pharmaceuticals and human serum using glassy carbon and boron-doped diamond electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Altun, Yuksel [Gazi University, Faculty of Education, Department of Chemistry, 06500 Teknikokullar, Ankara (Turkey); Dogan-Topal, Burcu; Uslu, Bengi [Ankara University, Faculty of Pharmacy, Department of Analytical Chemistry, 06100 Tandogan, Ankara (Turkey); Ozkan, Sibel A. [Ankara University, Faculty of Pharmacy, Department of Analytical Chemistry, 06100 Tandogan, Ankara (Turkey)], E-mail: ozkan@pharmacy.ankara.edu.tr

    2009-02-15

    The electrochemical oxidation of sertindole was investigated using cyclic, linear sweep voltammetry at a glassy carbon and boron-doped diamond electrodes. The aim of this study was to determine sertindole levels in serum and pharmaceutical formulations, by means of electrochemical methods. In cyclic voltammetry, depending on pH values, sertindole showed one or two irreversible oxidation responses. These two responses were found related to the different electroactive part of the molecule. Using second and sharp oxidation peak, two voltammetric methods were described for the determination of sertindole by differential pulse and square wave voltammetry at the glassy carbon and boron-doped diamond electrodes. Under optimized conditions, the current showed a linear dependence with concentration in the range between 1 x 10{sup -6} and 1 x 10{sup -4} M in acetate buffer at pH 3.5 and between 4 x 10{sup -6} and 1 x 10{sup -4} M in spiked human serum samples for both methods. The repeatability, reproducibility, selectivity, precision and accuracy of all the methods in all media were investigated and calculated. These methods were successfully applied for the analysis of sertindole pharmaceutical dosage forms and human serum samples. No electroactive interferences from the tablet excipients and endogenous substances from biological material were found.

  13. Interaction of organophosphorus pesticides with DNA nucleotides on a Boron-doped diamond electrode

    Energy Technology Data Exchange (ETDEWEB)

    Garbellini, Gustavo S.; Uliana, Carolina V.; Yamanaka, Hideko, E-mail: gustgarb@yahoo.com.br [Universidade Estadual Paulista Julio de Mesquita Filho (UNESP), Bauru, SP (Brazil). Dept. de Quimica Analitica

    2013-12-01

    Diamond electrode was used to evaluate the interaction of the nucleotides guanosine monophosphate (GMP) and adenosine monophosphate (AMP) with the pesticides chlorpyrifos, methamidophos and monocrotophos. Changes were observed in the currents and peak potentials of the nucleotide voltammograms in the presence of the pesticides, with dependence on the pesticide concentration (from 5.0 Multiplication-Sign 10{sup -7} to 5.0 Multiplication-Sign 10{sup -5} mol L{sup -1}) and the interaction time (from 1 min to 4 h). This is probably due to binding of the pesticides to the nitrogenous bases present in the nucleotides, which could lead to problems in the DNA replication and biological functions of nucleotides. The pesticides showed stronger interaction with AMP than with GMP. Studies of the interaction of 50 Micro-Sign g mL{sup -1} DNA with the pesticides (from 30 min to 4 h and from 1.0 Multiplication-Sign 10{sup -6} to 6.0 Multiplication-Sign 10{sup -5} mol L{sup -1}) did not reveal any peaks relating to double helix opening or DNA unwinding. (author)

  14. The pressure sensitivity of wrinkled B-doped nanocrystalline diamond membranes

    Science.gov (United States)

    Drijkoningen, S.; Janssens, S. D.; Pobedinskas, P.; Koizumi, S.; van Bael, M. K.; Haenen, K.

    2016-10-01

    Nanocrystalline diamond (NCD) membranes are promising candidates for use as sensitive pressure sensors. NCD membranes are able to withstand harsh conditions and are easily fabricated on glass. In this study the sensitivity of heavily boron doped NCD (B:NCD) pressure sensors is evaluated with respect to different types of supporting glass substrates, doping levels and membrane sizes. Higher pressure sensing sensitivities are obtained for membranes on Corning Eagle 2000 glass, which have a better match in thermal expansion coefficient with diamond compared to those on Schott AF45 glass. In addition, it is shown that larger and more heavily doped membranes are more sensitive. After fabrication of the membranes, the stress in the B:NCD films is released by the emergence of wrinkles. A better match between the thermal expansion coefficient of the NCD layer and the underlying substrate results in less stress and a smaller amount of wrinkles as confirmed by Raman spectroscopy and 3D surface imaging.

  15. Pulsed Amperometry for Anti-fouling of Boron-doped Diamond in Electroanalysis of β-Agonists: Application to Flow Injection for Pharmaceutical Analysis

    Directory of Open Access Journals (Sweden)

    Duangjai Nacapricha

    2006-01-01

    Full Text Available This work presents the construction and application of boron-doped diamond(BDD thin film electrode as sensor for the determination of three β-agonists, viz.salbutamol, terbutaline and clenbuterol. Although well-known as a chemically inertmaterial, BDD film however shows fouling in detection of these compounds using fixedpotentialmode amperometry. A suitable waveform for pulsed amperometric detection(PAD was developed and used to determine the agonist compounds. It was seen that thedeveloped PAD significantly refreshed the BDD surface for long-term detection in flowinjection analysis. Linear working ranges were 0.5-100 μM, 1.0-100 μM and 0.5-50 μM forsalbutamol, terbutaline and clenbuterol, respectively. The developed PAD-BDD system wasapplied to successfully determine salbutamol and terbutaline in commercial pharmaceuticalproducts. The methods were validated with a capillary electrophoresis method.

  16. Investigation of a Cu/Pd Bimetallic System Electrodeposited on Boron-Doped Diamond Films for Application in Electrocatalytic Reduction of Nitrate

    Directory of Open Access Journals (Sweden)

    Jorge T. Matsushima

    2012-01-01

    Full Text Available The Cu/Pd bimetallic system electrodeposited on boron-doped diamond (BDD films for application, as electrode material in the electrochemical reduction of nitrate was studied. The electrochemical behavior of Cu, Pd, and Cu/Pd bimetallic system was evaluated by cyclic voltammetry. From these results, the formation of the Cu/Pd composite was verified. In addition, Cu with different phases and a Cu/Pd phase in the composite were obtained. Morphological analysis by scanning electron microscopy (SEM revealed a homogeneous distribution of Cu/Pd bimetallic particles with intermediary dimensions compared to those observed in Cu or Pd electrodeposits separately. These composites were tested as electrocatalysts for nitrate reduction in Britton-Robinson buffer solution (pH 9. Electrochemical measurements showed that composites with higher Cu content displayed the best electrocatalytic activity for nitrate reduction, and the Cu/Pd phase in the bimetallic system served to improve the Cu adherence on BDD electrode.

  17. Large-amplitude Fourier transformed high-harmonic alternating current cyclic voltammetry: kinetic discrimination of interfering Faradaic processes at glassy carbon and at boron-doped diamond electrodes.

    Science.gov (United States)

    Zhang, Jie; Guo, Si-Xuan; Bond, Alan M; Marken, Frank

    2004-07-01

    Significant advantages of Fourier transformed large-amplitude ac higher (second to eighth) harmonics relative to responses obtained with conventional small-amplitude ac or dc cyclic voltammetric methods have been demonstrated with respect to (i) the suppression of capacitive background currents, (ii) the separation of the reversible reduction of [Ru(NH(3))(6)](3+) from the overlapping irreversible oxygen reduction process under conditions where aerobic oxygen remains present in the electrochemical cell, and (iii) the kinetic resolution of the reversible [Ru(NH(3))(6)](3+/2+) process in mixtures of [Fe(CN)(6)](3-) and [Ru(NH(3))(6)](3+) at appropriately treated boron-doped diamond electrodes, even when highly unfavorable [Fe(CN)(6)](3-) to [Ru(NH(3))(6)](3+) concentration ratios are employed. Theoretical support for the basis of kinetic discrimination in large-amplitude higher harmonic ac cyclic voltammetry is provided.

  18. Electrolyte influence on the Cu nanoparticles electrodeposition onto boron doped diamond electrode; Influencia do eletrolito na eletrodeposicao de nanoparticulas de Cu sobre eletrodo de diamante dopado com boro

    Energy Technology Data Exchange (ETDEWEB)

    Matsushima, Jorge Tadao; Santos, Laura Camila Diniz; Couto, Andrea Boldarini; Baldan, Mauricio Ribeiro; Ferreira, Neidenei Gomes [Instituto Nacional de Pesquisas Espaciais (INPE), Sao Jose dos Campos, SP (Brazil)

    2012-07-01

    This paper presents the electrolyte influence on deposition and dissolution processes of Cu nanoparticles on boron doped diamond electrodes (DDB). Morphological, structural and electrochemical analysis showed BDD films with good reproducibility, quality and reversible in a specific redox system. Electrodeposition of Cu nanoparticles on DDB electrodes in three different solutions was influenced by pH and ionic strength of the electrolytic medium. Analyzing the process as function of the scan rate, it was verified a better efficiency in 0,5 mol L{sup -1} Na{sub 2}SO{sub 4} solution. Under the influence of the pH and ionic strength, Cu nanoparticles on DDB may be obtained with different morphologies and it was important for defining the desired properties. (author)

  19. Electroanalysis of sulfonamides by flow injection system/high-performance liquid chromatography coupled with amperometric detection using boron-doped diamond electrode.

    Science.gov (United States)

    Preechaworapun, Anchana; Chuanuwatanakul, Suchada; Einaga, Yasuaki; Grudpan, Kate; Motomizu, Shoji; Chailapakul, Orawon

    2006-02-28

    Sulfonamides (SAs) were electrochemically investigated using cyclic voltammetry at a boron-doped diamond (BDD) electrode. Comparison experiments were carried out using a glassy carbon electrode. The BDD electrode provided well-resolved oxidation, irreversible cyclic voltammograms and higher current signals when compared to the glassy carbon electrode. Results obtained from using the BDD electrode in a flow injection system coupled with amperometric detection were illustrated. The optimum potential from a hydrodynamic voltammogram was found to be 1100mV versus Ag/AgCl, which was chosen for the HPLC-amperometric system. Excellent results of linear range and detection limit were obtained. This method was also used for determination of sulfonamides in egg samples. The standard solutions of 5, 10, and 15ppm were spiked in a real sample, and percentage of recoveries was found to be between 90.0 and 107.7.

  20. Assessment of Boron Doped Diamond Electrode Quality and Application to In Situ Modification of Local pH by Water Electrolysis.

    Science.gov (United States)

    Read, Tania L; Macpherson, Julie V

    2016-01-06

    Boron doped diamond (BDD) electrodes have shown considerable promise as an electrode material where many of their reported properties such as extended solvent window, low background currents, corrosion resistance, etc., arise from the catalytically inert nature of the surface. However, if during the growth process, non-diamond-carbon (NDC) becomes incorporated into the electrode matrix, the electrochemical properties will change as the surface becomes more catalytically active. As such it is important that the electrochemist is aware of the quality and resulting key electrochemical properties of the BDD electrode prior to use. This paper describes a series of characterization steps, including Raman microscopy, capacitance, solvent window and redox electrochemistry, to ascertain whether the BDD electrode contains negligible NDC i.e. negligible sp(2) carbon. One application is highlighted which takes advantage of the catalytically inert and corrosion resistant nature of an NDC-free surface i.e. stable and quantifiable local proton and hydroxide production due to water electrolysis at a BDD electrode. An approach to measuring the local pH change induced by water electrolysis using iridium oxide coated BDD electrodes is also described in detail.

  1. Filmes de diamante CVD dopado com boro. Parte I . Histórico, produção e caracterização Boron-doped CVD diamond films. Part I. History, production and characterization

    Directory of Open Access Journals (Sweden)

    Rita de Cássia Mendes de Barros

    2005-03-01

    Full Text Available This review presents a brief account concerning the production, characterization and evolution of the knowledge in the area of diamond and boron-doped diamond films. The most important methods used for the growth of these films, such as chemical vapor deposition and high pressure/high temperature systems, as well as the several kinds of reactors which can be employed are reviewed. However, larger emphasis is given to the CVD method. Morphological, structural and electric properties of these films, as well as their role in the performance of voltammetric electrodes for electrochemistry and electroanalytical chemistry are also discussed.

  2. Direct electrochemistry of Shewanella loihica PV-4 on gold nanoparticles-modified boron-doped diamond electrodes fabricated by layer-by-layer technique.

    Science.gov (United States)

    Wu, Wenguo; Xie, Ronggang; Bai, Linling; Tang, Zuming; Gu, Zhongze

    2012-05-01

    Microbial Fuel Cells (MFCs) are robust devices capable of taping biological energy, converting pollutants into electricity through renewable biomass. The fabrication of nanostructured electrodes with good bio- and electrochemical activity, play a profound role in promoting power generation of MFCs. Au nanoparticles (AuNPs)-modified Boron-Doped Diamond (BDD) electrodes are fabricated by layer-by-layer (LBL) self-assembly technique and used for the direct electrochemistry of Shewanella loihica PV-4 in an electrochemical cell. Experimental results show that the peak current densities generated on the Au/PAH multilayer-modified BDD electrodes increased from 1.25 to 2.93 microA/cm(-2) as the layer increased from 0 to 6. Different cell morphologies of S. loihica PV-4 were also observed on the electrodes and the highest density of cells was attached on the (Au/PAH)6/BDD electrode with well-formed three-dimensional nanostructure. The electrochemistry of S. loihica PV-4 was enhanced on the (Au/PAH)4/BDD electrode due to the appropriate amount of AuNPsand thickness of PAH layer.

  3. Electro-fenton and photoelectro-fenton degradation of sulfanilic acid using a boron-doped diamond anode and an air diffusion cathode.

    Science.gov (United States)

    El-Ghenymy, Abdellatif; Garrido, José Antonio; Centellas, Francesc; Arias, Conchita; Cabot, Pere Lluís; Rodríguez, Rosa María; Brillas, Enric

    2012-04-01

    The mineralization of sulfanilic acid has been studied by electro-Fenton (EF) and photoelectro-Fenton (PEF) reaction with UVA light using an undivided electrochemical cell with a boron-doped diamond (BDD) anode and an air diffusion cathode able to generate H(2)O(2). Organics were then oxidized by hydroxyl radicals formed at the anode surface from water oxidation and in the bulk from Fenton's reaction between generated H(2)O(2) and added Fe(2+). The UVA irradiation in PEF enhanced the production of hydroxyl radicals in the bulk, accelerating the removal of organics and photodecomposed intermediates like Fe(III)-carboxylate complexes. Partial decontamination of 1.39 mM sulfanilic acid solutions was achieved by EF until 100 mA cm(-2) at optimum conditions of 0.4 mM Fe(2+) and pH 3.0. The increase in current density and substrate content led to an almost total mineralization. In contrast, the PEF process was more powerful, yielding almost complete mineralization in less electrolysis time under comparable conditions. The kinetics for sulfanilic acid decay always followed a pseudo-first-order reaction. Hydroquinone and p-benzoquinone were detected as aromatic intermediates, whereas acetic, maleic, formic, oxalic, and oxamic acids were identified as generated carboxylic acids. NH(4)(+) ion was preferentially released in both treatments, along with NO(3)(-) ion in smaller proportion.

  4. Molecular Signature of Pseudomonas aeruginosa with Simultaneous Nanomolar Detection of Quorum Sensing Signaling Molecules at a Boron-Doped Diamond Electrode

    Science.gov (United States)

    Buzid, Alyah; Shang, Fengjun; Reen, F. Jerry; Muimhneacháin, Eoin Ó.; Clarke, Sarah L.; Zhou, Lin; Luong, John H. T.; O’Gara, Fergal; McGlacken, Gerard P.; Glennon, Jeremy D.

    2016-07-01

    Electroanalysis was performed using a boron-doped diamond (BDD) electrode for the simultaneous detection of 2-heptyl-3-hydroxy-4-quinolone (PQS), 2-heptyl-4-hydroxyquinoline (HHQ) and pyocyanin (PYO). PQS and its precursor HHQ are two important signal molecules produced by Pseudomonas aeruginosa, while PYO is a redox active toxin involved in virulence and pathogenesis. This Gram-negative and opportunistic human pathogen is associated with a hospital-acquired infection particularly in patients with compromised immunity and is the primary cause of morbidity and mortality in cystic fibrosis (CF) patients. Early detection is crucial in the clinical management of this pathogen, with established infections entering a biofilm lifestyle that is refractory to conventional antibiotic therapies. Herein, a detection procedure was optimized and proven for the simultaneous detection of PYO, HHQ and PQS in standard mixtures, biological samples, and P. aeruginosa spiked CF sputum samples with remarkable sensitivity, down to nanomolar levels. Differential pulse voltammetry (DPV) scans were also applicable for monitoring the production of PYO, HHQ and PQS in P. aeruginosa PA14 over 8 h of cultivation. The simultaneous detection of these three compounds represents a molecular signature specific to this pathogen.

  5. A sandwich structured SiO(2)/cytochrome c/SiO(2) on a boron-doped diamond film electrode as an electrochemical nitrite biosensor.

    Science.gov (United States)

    Geng, Rong; Zhao, Guohua; Liu, Meichuan; Li, Mingfang

    2008-06-01

    A novel sandwich structured SiO(2) gel/cytochrome c (Cyt c)/SiO(2) gel was designed and constructed on conductive boron-doped diamond (BDD) film substrate. A SiO(2) gel membrane was first in situ deposited on the pretreated positive charged H-terminated BDD electrode with a simple and artful surface vapor sol-gel method. Cyt c was subsequently immobilized onto the SiO(2) membranes by electrostatic attraction, followed by another SiO(2) gel layer in situ depositing on it. The SiO(2) interlayer was conceived to play an important role in the resultant sandwich structured SiO(2)/Cyt c/SiO(2)/BDD electrode as a selective "semi-open" medium, which guaranteed the immobilized Cyt c to maintain high stability and perform good electrochemistry and biocatalysis responses. The bioactivity of Cyt c was well protected and the immobilized biomolecule even didn't denature at extremely high or low pH condition. More attractively, Cyt c in the sandwich structured electrode could be further oxidized into highly reactive Cyt c pi-cation by two-step electrochemical oxidation, which could oxidize NO(2)(-) into NO(3)(-) in the solution. A sensitive determination approach of nitrite was accordingly built up based on this biocatalytic oxidative interaction for the first time and a possible mechanism of the interaction was herein proposed.

  6. Investigation of the synergistic effects for p-nitrophenol mineralization by a combined process of ozonation and electrolysis using a boron-doped diamond anode.

    Science.gov (United States)

    Qiu, Cuicui; Yuan, Shi; Li, Xiang; Wang, Huijiao; Bakheet, Belal; Komarneni, Sridhar; Wang, Yujue

    2014-09-15

    Electrolysis and ozonation are two commonly used technologies for treating wastewaters contaminated with nitrophenol pollutants. However, they are often handicapped by their slow kinetics and low yields of total organic carbon (TOC) mineralization. To improve TOC mineralization efficiency, we combined electrolysis using a boron-doped diamond (BDD) anode with ozonation (electrolysis-O3) to treat a p-nitrophenol (PNP) aqueous solution. Up to 91% TOC was removed after 60 min of the electrolysis-O3 process. In comparison, only 20 and 44% TOC was respectively removed by individual electrolysis and ozonation treatment conducted under similar reaction conditions. The result indicates that when electrolysis and ozonation are applied simultaneously, they have a significant synergy for PNP mineralization. This synergy can be mainly attributed to (i) the rapid degradation of PNP to carboxylic acids (e.g., oxalic acid and acetic acid) by O3, which would otherwise take a much longer time by electrolysis alone, and (ii) the effective mineralization of the ozone-refractory carboxylic acids to CO2 by OH generated from multiple sources in the electrolysis-O3 system. The result suggests that combining electrolysis with ozonation can provide a simple and effective way to mutually compensate the limitations of the two processes for degradation of phenolic pollutants.

  7. Electrochemical Imprinted Polycrystalline Nickel-Nickel Oxide Half-Nanotube-Modified Boron-Doped Diamond Electrode for the Detection of L-Serine.

    Science.gov (United States)

    Dai, Wei; Li, Hongji; Li, Mingji; Li, Cuiping; Wu, Xiaoguo; Yang, Baohe

    2015-10-21

    This paper presents a novel and versatile method for the fabrication of half nanotubes (HNTs) using a flexible template-based nanofabrication method denoted as electrochemical imprinting. With use of this method, polycrystalline nickel and nickel(II) oxide (Ni-NiO) HNTs were synthesized using pulsed electrodeposition to transfer Ni, deposited by radio frequency magnetron sputtering on a porous polytetrafluoroethylene template, onto a boron-doped diamond (BDD) film. The Ni-NiO HNTs exhibited semicircular profiles along their entire lengths, with outer diameters of 50-120 nm and inner diameters of 20-50 nm. The HNT walls were formed of Ni and NiO nanoparticles. A biosensor for the detection of L-serine was fabricated using a BDD electrode modified with Ni-NiO HNTs, and the device demonstrated satisfactory analytical performance with high sensitivity (0.33 μA μM(-1)) and a low limit of detection (0.1 μM). The biosensor also exhibited very good reproducibility and stability, as well as a high anti-interference ability against amino acids such as L-leucine, L-tryptophan, L-cysteine, L-phenylalanine, L-arginine, and L-lysine.

  8. Molecular Signature of Pseudomonas aeruginosa with Simultaneous Nanomolar Detection of Quorum Sensing Signaling Molecules at a Boron-Doped Diamond Electrode

    Science.gov (United States)

    Buzid, Alyah; Shang, Fengjun; Reen, F. Jerry; Muimhneacháin, Eoin Ó; Clarke, Sarah L.; Zhou, Lin; Luong, John H. T.; O’Gara, Fergal; McGlacken, Gerard P.; Glennon, Jeremy D.

    2016-01-01

    Electroanalysis was performed using a boron-doped diamond (BDD) electrode for the simultaneous detection of 2-heptyl-3-hydroxy-4-quinolone (PQS), 2-heptyl-4-hydroxyquinoline (HHQ) and pyocyanin (PYO). PQS and its precursor HHQ are two important signal molecules produced by Pseudomonas aeruginosa, while PYO is a redox active toxin involved in virulence and pathogenesis. This Gram-negative and opportunistic human pathogen is associated with a hospital-acquired infection particularly in patients with compromised immunity and is the primary cause of morbidity and mortality in cystic fibrosis (CF) patients. Early detection is crucial in the clinical management of this pathogen, with established infections entering a biofilm lifestyle that is refractory to conventional antibiotic therapies. Herein, a detection procedure was optimized and proven for the simultaneous detection of PYO, HHQ and PQS in standard mixtures, biological samples, and P. aeruginosa spiked CF sputum samples with remarkable sensitivity, down to nanomolar levels. Differential pulse voltammetry (DPV) scans were also applicable for monitoring the production of PYO, HHQ and PQS in P. aeruginosa PA14 over 8 h of cultivation. The simultaneous detection of these three compounds represents a molecular signature specific to this pathogen. PMID:27427496

  9. Enhancing the electrochemical oxidation of acid-yellow 36 azo dye using boron-doped diamond electrodes by addition of ferrous ion

    Energy Technology Data Exchange (ETDEWEB)

    Villanueva-Rodriguez, M.; Hernandez-Ramirez, A. [Universidad Autonoma de Nuevo Leon, Facultad de Ciencias Quimicas, Av. Universidad s/n, Cd. Universitaria, San Nicolas de los Garza, NL. 66400 (Mexico); Peralta-Hernandez, J.M., E-mail: jperalta@fcq.uanl.mx [Universidad Autonoma de Nuevo Leon, Facultad de Ciencias Quimicas, Av. Universidad s/n, Cd. Universitaria, San Nicolas de los Garza, NL. 66400 (Mexico); Bandala, Erick R.; Quiroz-Alfaro, Marco A. [Universidad de Las Americas - Puebla, Escuela de Ingenieria y Ciencias, Sta. Catarina Martir - Cholula, Puebla 72820 (Mexico)

    2009-08-15

    This work shows preliminary results on the electrochemical oxidation process (EOP) using boron-doped diamond (BDD) electrode for acidic yellow 36 oxidation, a common azo dye used in textile industry. The study is centred in the synergetic effect of ferrous ions and hydroxyl free radicals for improving discoloration of azo dye. The assays were carried out in a typical glass cell under potentiostatic conditions. On experimental conditions, the EOP was able to partially remove the dye from the reaction mixture. The reaction rate increased significantly by addition of Fe{sup 2+} (1 mM as ferrous sulphate) to the system and by (assumed) generation of ferrate ion [Fe(VI)] over BDD electrode. Ferrate is considered as a highly oxidizing reagent capable of removing the colorant from the reaction mixture, in synergistic action with the hydroxyl radicals produced on the BDD surface. Further increases in the Fe{sup 2+} concentration lead to depletion of the reaction rate probably due to the hydroxyl radical scavenging effect of Fe{sup 2+} excess in the system.

  10. 硼掺杂金刚石电极及其电分析应用%Electroanalytical Applications of Boron Doped Diamond Electrode

    Institute of Scientific and Technical Information of China (English)

    高成耀; 常明; 李晓伟; 李翠平

    2011-01-01

    一种新电极材料的发明往往会推动电分析测试的发展.硼掺杂金刚石(BDD)电极在电分析中具备宽电势窗口、低背景电流、耐腐蚀稳定性高和低吸附的特点,因而在电分析化学中引起了广泛的兴趣.本文对BDD电极的制备、表征和基本电分析性质进行了介绍,并对其在毛细管电泳、生物传感电极、痕量金属离子检测、化学修饰电极及化学需氧量快速测定方面的应用进行了综述.%Discoveries of new materials have significant impact on development of new methods and instrumentation for eletroanalysis.Boron doped diamond (BDD) electrode occupies a special place as an electrode material with interesting applications in electroanalysis because of its superior properties such as a wide potential window, low background current responses, remarkable corrosion stability, an inert surface with low adsorption.BDD electrodes have attracted the interests of many researchers for electrophoresis.The object of this article is to discuss the recent results available in the literature concerning the application of BDD electrodes to electroanalysis such as capillary electrophoresis end-column detection, electrochemical biosensor, anodic stripping voltammetry for trace metal ion detection, modified diamond electrodes and chemical oxygen demand detection.

  11. Electrochemical degradation of a real textile effluent using boron-doped diamond or {beta}-PbO{sub 2} as anode

    Energy Technology Data Exchange (ETDEWEB)

    Aquino, Jose M.; Pereira, Gabriel F. [Departmento de Quimica, Universidade Federal de Sao Carlos, C. P. 676, 13560-970 Sao Carlos, SP (Brazil); Rocha-Filho, Romeu C., E-mail: romeu@dq.ufscar.br [Departmento de Quimica, Universidade Federal de Sao Carlos, C. P. 676, 13560-970 Sao Carlos, SP (Brazil); Bocchi, Nerilso; Biaggio, Sonia R. [Departmento de Quimica, Universidade Federal de Sao Carlos, C. P. 676, 13560-970 Sao Carlos, SP (Brazil)

    2011-09-15

    Highlights: {center_dot} Diamond anode enables total abatement of a real textile effluent COD with low energy consumption. {center_dot} Use of diamond anode enables excellent decolorization rate of effluent in the presence of Cl{sup -} ions. {center_dot} Diamond anode might be an excellent option for electrochemical treatment of real textile effluents. {center_dot} PbO{sub 2} anode, due to low cost and easiness of preparation, may be an option to decolorize the effluents. - Abstract: Constant current electrolyses are carried out in a filter-press reactor using a boron-doped diamond (Nb/BDD) or a Ti-Pt/{beta}-PbO{sub 2} anode, varying current density (j) and temperature. The degradation of the real textile effluent is followed by its decolorization and chemical oxygen demand (COD) abatement. The effect of adding NaCl (1.5 g L{sup -1}) on the degradation of the effluent is also investigated. The Nb/BDD anode yields much higher decolorization (attaining the DFZ limit) and COD-abatement rates than the Ti-Pt/{beta}-PbO{sub 2} anode, at any experimental condition. The best conditions are j = 5 mA cm{sup -2} and 55 {sup o}C, for the system's optimized hydrodynamic conditions. The addition of chloride ions significantly increases the decolorization rate; thus a decrease of more than 90% of the effluent relative absorbance is attained using an applied electric charge per unit volume of the electrolyzed effluent (Q{sub ap}) of only about 2 kA h m{sup -3}. Practically total abatement of the effluent COD is attained with the Nb/BDD anode using a Q{sub ap} value of only 7 kA h m{sup -3}, with an energy consumption of about 30 kW h m{sup -3}. This result allows to conclude that the Nb/BDD electrode might be an excellent option for the remediation of textile effluents.

  12. Degradation of 4,6-dinitro-o-cresol from water by anodic oxidation with a boron-doped diamond electrode

    Energy Technology Data Exchange (ETDEWEB)

    Flox, Cristina [Laboratori de Ciencia i Tecnologia Electroquimica de Materials, Departament de Quimica Fisica, Facultat de Quimica, Universitat de Barcelona, Marti i Franques 1-11, 08028 Barcelona (Spain); Garrido, Jose Antonio [Laboratori de Ciencia i Tecnologia Electroquimica de Materials, Departament de Quimica Fisica, Facultat de Quimica, Universitat de Barcelona, Marti i Franques 1-11, 08028 Barcelona (Spain); Rodriguez, Rosa Maria [Laboratori de Ciencia i Tecnologia Electroquimica de Materials, Departament de Quimica Fisica, Facultat de Quimica, Universitat de Barcelona, Marti i Franques 1-11, 08028 Barcelona (Spain); Centellas, Francesc [Laboratori de Ciencia i Tecnologia Electroquimica de Materials, Departament de Quimica Fisica, Facultat de Quimica, Universitat de Barcelona, Marti i Franques 1-11, 08028 Barcelona (Spain); Cabot, Pere-Lluis [Laboratori de Ciencia i Tecnologia Electroquimica de Materials, Departament de Quimica Fisica, Facultat de Quimica, Universitat de Barcelona, Marti i Franques 1-11, 08028 Barcelona (Spain); Arias, Conchita [Laboratori de Ciencia i Tecnologia Electroquimica de Materials, Departament de Quimica Fisica, Facultat de Quimica, Universitat de Barcelona, Marti i Franques 1-11, 08028 Barcelona (Spain); Brillas, Enric [Laboratori de Ciencia i Tecnologia Electroquimica de Materials, Departament de Quimica Fisica, Facultat de Quimica, Universitat de Barcelona, Marti i Franques 1-11, 08028 Barcelona (Spain)]. E-mail: brillas@ub.edu

    2005-06-10

    Anodic oxidation of 4,6-dinitro-o-cresol (DNOC) has been studied in a cell of 100 ml with a boron-doped diamond anode and a graphite cathode, both of 3-cm{sup 2} area. Solutions containing up to approximately 240 mg l{sup -1} of compound in the pH range 2.0-12.0 have been treated at 100, 300 and 450 mA between 15 and 50 deg C. Total mineralization is always achieved due to the great amount of hydroxyl radical ({center_dot}OH) produced as oxidant on the anode surface. Total organic carbon is more rapidly removed in acid medium, being the optimum pH 3.0. The degradation rate increases when temperature, current and DNOC concentration increase. However, at 100 mA depollution becomes more effective from 71 mg l{sup -1} of initial pollutant. A pseudo first-order kinetics for DNOC decay is always found by reversed-phase chromatography, with a rate constant practically independent of pH, as expected if the same electroactive species is oxidized in all media. Ion-exclusion chromatography allowed the detection of oxalic acid as the ultimate carboxylic acid. The mineralization process leads to the complete release of NO{sub 3} {sup -} ions from the destruction of nitroderivative intermediates. These products are oxidized simultaneously with accumulated oxalic acid up to the end of electrolyses. Comparative treatment of the same solutions with a Pt anode yields a quite poor depollution because of the generation of much lower amounts of reactive {center_dot}OH on its surface.

  13. A novel paper-based device coupled with a silver nanoparticle-modified boron-doped diamond electrode for cholesterol detection

    Energy Technology Data Exchange (ETDEWEB)

    Nantaphol, Siriwan [Electrochemistry and Optical Spectroscopy Research Unit, Department of Chemistry, Faculty of Science, Chulalongkorn University, 254 Phayathai Road, Pathumwan, Bangkok 10330 (Thailand); Chailapakul, Orawon, E-mail: corawon@chula.ac.th [Electrochemistry and Optical Spectroscopy Research Unit, Department of Chemistry, Faculty of Science, Chulalongkorn University, 254 Phayathai Road, Pathumwan, Bangkok 10330 (Thailand); Center for Petroleum, Petrochemicals and Advanced Materials, Chulalongkorn University, 254 Phayathai Road, Pathumwan, Bangkok 10330 (Thailand); Siangproh, Weena, E-mail: weenasi@hotmail.com [Department of Chemistry, Faculty of Science, Srinakharinwirot University, Sukhumvit 23, Wattanna, Bangkok 10110 (Thailand)

    2015-09-03

    A novel paper-based analytical device (PAD) coupled with a silver nanoparticle-modified boron-doped diamond (AgNP/BDD) electrode was first developed as a cholesterol sensor. The AgNP/BDD electrode was used as working electrode after modification by AgNPs using an electrodeposition method. Wax printing was used to define the hydrophilic and hydrophobic areas on filter paper, and then counter and reference electrodes were fabricated on the hydrophilic area by screen-printing in house. For the amperometric detection, cholesterol and cholesterol oxidase (ChOx) were directly drop-cast onto the hydrophilic area, and H{sub 2}O{sub 2} produced from the enzymatic reaction was monitored. The fabricated device demonstrated a good linearity (0.39 mg dL{sup −1} to 270.69 mg dL{sup −1}), low detection limit (0.25 mg dL{sup −1}), and high sensitivity (49.61 μA mM{sup −1} cm{sup −2}). The precision value for ten replicates was 3.76% RSD for 1 mM H{sub 2}O{sub 2}. In addition, this biosensor exhibited very high selectivity for cholesterol detection and excellent recoveries for bovine serum analysis (in the range of 99.6–100.8%). The results showed that this new sensing platform will be an alternative tool for cholesterol detection in routine diagnosis and offers the advantages of low sample/reagent consumption, low cost, portability, and short analysis time. - Highlights: • Novel PAD coupled with AgNP/BDDE for cholesterol determination was developed. • Wide linear range, low detection limit and high selectivity were achieved. • This sensor was successfully applied for cholesterol determination in bovine serum. • This platform offers the advantages of low sample/reagent consumption and low cost.

  14. 掺硼金刚石膜电极处理医院废水的研究%Study on Hospital Wastewater using Boron-doped Diamond Electrode

    Institute of Scientific and Technical Information of China (English)

    于鲁冀; 孔德芳; 王震; 杨强

    2013-01-01

    通过研究自制电解槽,利用掺硼金刚石膜电极(BDD)对医疗废水进行消毒实验研究.实验研究了电流密度、消毒时间及Cl-浓度对消毒效果的影响.实验结果表明:电流密度越大,消毒效果越好;消毒接触时间越长,消毒效果越好;Cl-浓度对消毒效果影响显著,医疗废水C1-质量浓度达到200 mg/L以上,消毒接触时间≥9s,出水即可满足GB 18466-2005《医疗机构水污染物排放标准》粪大肠茵群数均不得超过500 MPN/L.%Study on the disinfection effect of hospital wastewater using the boron-doped diamond film electrode (BDD) in the self-electrolyzer was carried out. The disinfection effect of current density, disinfection time and the concentration of CV were studied in this experiment. The results showed that the greater the electric current density is, the better disinfection effect will be. The longer the contact time is,the better disinfection effect will be. The concentration of Cl- is significant on the disinfection effect. When the concentration of Cl- in hospital wastewater is more than 200 mg/L as well as the disinfection contact time is more than 9 s,the effluent could meet the requirement of the Medical Institutions Sewage Discharge Standard (GB 18466—2005) in which the value of fecal coliform should be no more than 500 MPN/L.

  15. Diclofenac on boron-doped diamond electrode: from electroanalytical determination to prediction of the electrooxidation mechanism with HPLC-ESI/HRMS and computational simulations.

    Science.gov (United States)

    Lucas, Francisco Willian de S; Mascaro, Lucia H; Fill, Taicia P; Rodrigues-Filho, Edson; Franco-Junior, Edison; Homem-de-Mello, Paula; de Lima-Neto, Pedro; Correia, Adriana N

    2014-05-20

    Using square-wave voltammetry coupled to the boron-doped diamond electrode (BDDE), it was possible to develop an analytical methodology for identification and quantification of diclofenac (DCL) in tablets and synthetic urine. The electroanalytical procedure was validated, with results being statistically equal to those obtained by chromatographic standard method, showing linear range of 4.94 × 10(-7) to 4.43 × 10(-6) mol L(-1), detection limit of 1.15 × 10(-7) mol L(-1), quantification limit of 3.85 × 10(-7) mol L(-1), repeatability of 3.05% (n = 10), and reproducibility of 1.27% (n = 5). The association of electrochemical techniques with UV-vis spectroscopy, computational simulations and HPLC-ESI/HRMS led us to conclude that the electrooxidation of DCL on the BDDE involved two electrons and two protons, where the products are colorful and easily hydrolyzable dimers. Density functional theory calculations allowed to evaluate the stability of dimers A, B, and C, suggesting dimer C was more stable than the other two proposed structures, ca. 4 kcal mol(-1). The comparison of the dimers stabilities with the stabilities of the molecular ions observed in the MS, the compounds that showed retention time (RT) of 15.53, 21.44, and 22.39 min were identified as the dimers B, C, and A, respectively. Corroborating the observed chromatographic profile, dimer B had a dipole moment almost twice higher than that of dimers A and C. As expected, dimer B has really shorter RT than dimers A and C. The majority dimer was the A (71%) and the C (19.8%) should be the minority dimer. However, the minority was the dimer B, which was formed in the proportion of 9.2%. This inversion between the formation proportion of dimer B and dimer C can be explained by preferential conformation of the intermediaries (cation-radicals) on the surface.

  16. Investigation of the synergistic effects for p-nitrophenol mineralization by a combined process of ozonation and electrolysis using a boron-doped diamond anode

    Energy Technology Data Exchange (ETDEWEB)

    Qiu, Cuicui [School of Environment, State Key Joint Laboratory of Environmental Simulation and Pollution Control, Tsinghua University, Beijing 100084 (China); Yuan, Shi [School of Environment, State Key Joint Laboratory of Environmental Simulation and Pollution Control, Tsinghua University, Beijing 100084 (China); Graduate School at Shenzhen, Tsinghua University, Shenzhen 518055 (China); Li, Xiang; Wang, Huijiao; Bakheet, Belal [School of Environment, State Key Joint Laboratory of Environmental Simulation and Pollution Control, Tsinghua University, Beijing 100084 (China); Komarneni, Sridhar [Department of Ecosystem Science and Management and Material Research Institute, 205 MRL Building, The Pennsylvania State University, University Park, PA 16802 (United States); Wang, Yujue, E-mail: wangyujue@tsinghua.edu.cn [School of Environment, State Key Joint Laboratory of Environmental Simulation and Pollution Control, Tsinghua University, Beijing 100084 (China); Graduate School at Shenzhen, Tsinghua University, Shenzhen 518055 (China)

    2014-09-15

    Graphical abstract: - Highlights: • Combining electrolysis with ozonation greatly enhances nitrophenol mineralization. • O{sub 3} can rapidly degrade nitrophenol to carboxylic acids in the bulk solution. • Carboxylic acids can be mineralized by ·OH generated from multiple sources in the electrolysis-O{sub 3} process. • Electrolysis and ozonation can compensate for each other's weakness on pollutant degradation. - Abstract: Electrolysis and ozonation are two commonly used technologies for treating wastewaters contaminated with nitrophenol pollutants. However, they are often handicapped by their slow kinetics and low yields of total organic carbon (TOC) mineralization. To improve TOC mineralization efficiency, we combined electrolysis using a boron-doped diamond (BDD) anode with ozonation (electrolysis-O{sub 3}) to treat a p-nitrophenol (PNP) aqueous solution. Up to 91% TOC was removed after 60 min of the electrolysis-O{sub 3} process. In comparison, only 20 and 44% TOC was respectively removed by individual electrolysis and ozonation treatment conducted under similar reaction conditions. The result indicates that when electrolysis and ozonation are applied simultaneously, they have a significant synergy for PNP mineralization. This synergy can be mainly attributed to (i) the rapid degradation of PNP to carboxylic acids (e.g., oxalic acid and acetic acid) by O{sub 3}, which would otherwise take a much longer time by electrolysis alone, and (ii) the effective mineralization of the ozone-refractory carboxylic acids to CO{sub 2} by ·OH generated from multiple sources in the electrolysis-O{sub 3} system. The result suggests that combining electrolysis with ozonation can provide a simple and effective way to mutually compensate the limitations of the two processes for degradation of phenolic pollutants.

  17. Degradation of the beta-blocker propranolol by electrochemical advanced oxidation processes based on Fenton's reaction chemistry using a boron-doped diamond anode

    Energy Technology Data Exchange (ETDEWEB)

    Isarain-Chavez, Eloy; Rodriguez, Rosa Maria; Garrido, Jose Antonio; Arias, Conchita; Centellas, Francesc; Cabot, Pere Lluis [Laboratori d' Electroquimica dels Materials i del Medi Ambient, Departament de Quimica Fisica, Facultat de Quimica, Universitat de Barcelona, Marti i Franques 1-11, 08028 Barcelona (Spain); Brillas, Enric, E-mail: brillas@ub.ed [Laboratori d' Electroquimica dels Materials i del Medi Ambient, Departament de Quimica Fisica, Facultat de Quimica, Universitat de Barcelona, Marti i Franques 1-11, 08028 Barcelona (Spain)

    2010-12-15

    The electro-Fenton (EF) and photoelectro-Fenton (PEF) degradation of solutions of the beta-blocker propranolol hydrochloride with 0.5 mmol dm{sup -3} Fe{sup 2+} at pH 3.0 has been studied using a single cell with a boron-doped diamond (BDD) anode and an air diffusion cathode (ADE) for H{sub 2}O{sub 2} electrogeneration and a combined cell containing the above BDD/ADE pair coupled in parallel to a Pt/carbon felt (CF) cell. This naphthalene derivative can be mineralized by both methods with a BDD anode. Almost overall mineralization is attained for the PEF treatments, more rapidly with the combined system due to the generation of higher amounts of hydroxyl radical from Fenton's reaction by the continuous Fe{sup 2+} regeneration at the CF cathode, accelerating the oxidation of organics to Fe(III)-carboxylate complexes that are more quickly photolyzed by UVA light. The homologous EF processes are less potent giving partial mineralization. The effect of current density, pH and Fe{sup 2+} and drug concentrations on the oxidation power of PEF process in combined cell is examined. Propranolol decay follows a pseudo first-order reaction in most cases. Aromatic intermediates such as 1-naphthol and phthalic acid and generated carboxylic acids such as maleic, formic, oxalic and oxamic are detected and quantified by high-performance liquid chromatography. The chloride ions present in the starting solution are slowly oxidized at the BDD anode. In PEF treatments, all initial N of propranolol is completely transformed into inorganic ions, with predominance of NH{sub 4}{sup +} over NO{sub 3}{sup -} ion.

  18. Tailoring nanocrystalline diamond film properties

    Science.gov (United States)

    Gruen, Dieter M.; McCauley, Thomas G.; Zhou, Dan; Krauss, Alan R.

    2003-07-15

    A method for controlling the crystallite size and growth rate of plasma-deposited diamond films. A plasma is established at a pressure in excess of about 55 Torr with controlled concentrations of hydrogen up to about 98% by volume, of unsubstituted hydrocarbons up to about 3% by volume and an inert gas of one or more of the noble gases and nitrogen up to about 98% by volume. The volume ratio of inert gas to hydrogen is preferably maintained at greater than about 4, to deposit a diamond film on a suitable substrate. The diamond film is deposited with a predetermined crystallite size and at a predetermined growth rate.

  19. Surface Roughness and Critical Exponent Analyses of Boron-Doped Diamond Films Using Atomic Force Microscopy Imaging: Application of Autocorrelation and Power Spectral Density Functions

    Science.gov (United States)

    Gupta, S.; Vierkant, G. P.

    2014-09-01

    The evolution of the surface roughness of growing metal or semiconductor thin films provides much needed information about their growth kinetics and corresponding mechanism. While some systems show stages of nucleation, coalescence, and growth, others exhibit varying microstructures for different process conditions. In view of these classifications, we report herein detailed analyses based on atomic force microscopy (AFM) characterization to extract the surface roughness and growth kinetics exponents of relatively low boron-doped diamond (BDD) films by utilizing the analytical power spectral density (PSD) and autocorrelation function (ACF) as mathematical tools. The machining industry has applied PSD for a number of years for tool design and analysis of wear and machined surface quality. Herein, we present similar analyses at the mesoscale to study the surface morphology as well as quality of BDD films grown using the microwave plasma-assisted chemical vapor deposition technique. PSD spectra as a function of boron concentration (in gaseous phase) are compared with those for samples grown without boron. We find that relatively higher boron concentration yields higher amplitudes of the longer-wavelength power spectral lines, with amplitudes decreasing in an exponential or power-law fashion towards shorter wavelengths, determining the roughness exponent ( α ≈ 0.16 ± 0.03) and growth exponent ( β ≈ 0.54), albeit indirectly. A unique application of the ACF, which is widely used in signal processing, was also applied to one-dimensional or line analyses (i.e., along the x- and y-axes) of AFM images, revealing surface topology datasets with varying boron concentration. Here, the ACF was used to cancel random surface "noise" and identify any spatial periodicity via repetitive ACF peaks or spatially correlated noise. Periodicity at shorter spatial wavelengths was observed for no doping and low doping levels, while smaller correlations were observed for relatively

  20. Cleaning method for regeneration of boron-doped diamond electrode%掺硼金刚石电极的再生性清洗方法研究

    Institute of Scientific and Technical Information of China (English)

    罗昊; 苟立; 包晗

    2011-01-01

    Boron-doped diamond (BDD) film electrode is of interest because of its excellent chemical and electrochemical stability,and very low adsorption of chemical species.But after repeated detection of high concentration neurotransmitters such as dopamine (DA) and serotonin (5-HT) ,the BDD electrode was fouled.Especially for the surface modified electrode,the adsorbate cannot be removed easily.Electrodes were sonicated in different cleaning agents, such as deionized water, ethanol,isopropanol.Cyclic voltammerry using Fe(CN)3-/4- redox probe confirmed less adsorbate on the surface of BDD electrode after sonication in isopropanol.The unmodified electrode with weak adsorption is easier to clean than modified one.Hydrogen microwave plasma treatment for 15 min is beneficial to both electrodes to remove surface attachment.The cleaned electrode detected the same oxidation peak and reduction peak of DA as the fresh one.%掺硼金刚石电极(BDD)是一种化学和电化学稳定性高、不易吸附污染物的电极.但是多次重复检测较高浓度神经递质如多巴胺、羟色胺后,产生了电极污染.特别是经过表面改性的电极,其表面吸附物难以简单去除.以Fe(CN)3-/4-氧化还原对为探针,通过二次水、乙醇、异丙醇等不同液体超声清洗,发现异丙醇是较好的清洗剂.未改性电极表面吸附弱,比改性电极容易清洗.氢气等离子处理15分钟,可以有效去除两类电极表面的吸附物,多巴胺检测结果表明清洗后的电极与新鲜电极测试结果接近,实现了旧电极的再生.

  1. Si/Nanocrystalline Diamond Film Heterojunction Diodes Preparation

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    With electron assisted hot filament chemical vapor deposition technology, nanocrystalline diamond films were deposited on polished n-(100)Si wafer surface. The deposited films were characterized and observed by Raman spectrum, X-ray diffraction, semiconductor characterization system and Hall effective measurement system. The results show that with EA-HFCVD, not only an undoped nanocrystalline diamond films with high-conductivity (p-type semiconducting) but also a p-n heterojunction diode between the nanocrystalline diamond films and n-Si substrate is fabricated successfully. The p-n heterojunction has smaller forward resistance and bigger positive resistance. The p-n junction effective is evident.

  2. 掺硼金刚石膜/碳膜平面式复合电极的制备及电化学性能%Electrochemical performance and preparation of composite planar electrode based on boron doped diamond film/carbon film

    Institute of Scientific and Technical Information of China (English)

    练发东; 芶立

    2014-01-01

    采用微波等离子体化学气相沉积法在本征硅上制备掺硼金刚石膜/碳膜平面式复合电极,其中硅片的一面为掺硼金刚石膜,另一面为碳膜。通过SEM和拉曼光谱分析了薄膜的表面形貌和成分,掺硼金刚石膜为纳米级金刚石,碳膜表面有均匀分布的凹坑;利用四探针、循环伏安法和交流阻抗法表征电极导电性和电化学性能,随着沉积时间增加,电极方阻减小;在铁氰化钾溶液中电极发生准可逆氧化还原反应,电势差为119mV,在103 Hz附近阻抗为113Ω;多巴胺的检测限为5μmol·L-1。%Boron doped diamond/carbon composite film electrode of planar configuration was prepared on the intrinsic silicon by mi-crowave plasma chemical vapor deposition. Boron doped diamond ( BDD ) film was deposited on the silicon substrate while carbon film was on the backside of the substrates. The surface morphology and composition of these films was studied by SEM and Raman spectroscopy. The SEM and Raman results show that the BDD films is nanocrystalline and there are many pits on the surface of car-bon films. The conductivity and electrochemical properties of these films were characterized by four-probe? measurement,cyclic vol-tammetry and impedance spectroscopy. The results reveal that the surface square resistance of the samples decreases with the in-crease of the depositing time. Electrochemical reaction is a quasi-reversible reaction in potassium ferricyanide solution with the po-tential difference of 119mv. The impedance of the samples at the frequency about 1000 Hz is 113Ω. The minimum detection limit of dopamine is 5μmol·L-1 .

  3. Piezoresistive boron doped diamond nanowire

    Science.gov (United States)

    Sumant, Anirudha V.; Wang, Xinpeng

    2016-09-13

    A UNCD nanowire comprises a first end electrically coupled to a first contact pad which is disposed on a substrate. A second end is electrically coupled to a second contact pad also disposed on the substrate. The UNCD nanowire is doped with a dopant and disposed over the substrate. The UNCD nanowire is movable between a first configuration in which no force is exerted on the UNCD nanowire and a second configuration in which the UNCD nanowire bends about the first end and the second end in response to a force. The UNCD nanowire has a first resistance in the first configuration and a second resistance in the second configuration which is different from the first resistance. The UNCD nanowire is structured to have a gauge factor of at least about 70, for example, in the range of about 70 to about 1,800.

  4. Microfabrication, characterization and in vivo MRI compatibility of diamond microelectrodes array for neural interfacing

    Energy Technology Data Exchange (ETDEWEB)

    Hébert, Clément, E-mail: clement.hebert@cea.fr [Institut Néel, CNRS et Université Joseph Fourier, BP 166, F-38042 Grenoble Cedex 9 (France); Warnking, Jan; Depaulis, Antoine [INSERM, U836, Grenoble Institut des Neurosciences, Grenoble (France); Garçon, Laurie Amandine [Institut Néel, CNRS et Université Joseph Fourier, BP 166, F-38042 Grenoble Cedex 9 (France); CEA/INAC/SPrAM/CREAB, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France); Mermoux, Michel [Université Grenoble Alpes, LEPMI, F-38000 Grenoble (France); CNRS, LEPMI, F-38000 Grenoble (France); Eon, David [Institut Néel, CNRS et Université Joseph Fourier, BP 166, F-38042 Grenoble Cedex 9 (France); Mailley, Pascal [CEA-LETI-DTBS Minatec, 17 rue des Martyres, 38054 Grenoble (France); Omnès, Franck [Institut Néel, CNRS et Université Joseph Fourier, BP 166, F-38042 Grenoble Cedex 9 (France)

    2015-01-01

    Neural interfacing still requires highly stable and biocompatible materials, in particular for in vivo applications. Indeed, most of the currently used materials are degraded and/or encapsulated by the proximal tissue leading to a loss of efficiency. Here, we considered boron doped diamond microelectrodes to address this issue and we evaluated the performances of a diamond microelectrode array. We described the microfabrication process of the device and discuss its functionalities. We characterized its electrochemical performances by cyclic voltammetry and impedance spectroscopy in saline buffer and observed the typical diamond electrode electrochemical properties, wide potential window and low background current, allowing efficient electrochemical detection. The charge storage capacitance and the modulus of the electrochemical impedance were found to remain in the same range as platinum electrodes used for standard commercial devices. Finally we observed a reduced Magnetic Resonance Imaging artifact when the device was implanted on a rat cortex, suggesting that boron doped-diamond is a very promising electrode material allowing functional imaging. - Highlights: • Microfabrication of all-diamond microelectrode array • Evaluation of as-grown nanocrystalline boron-doped diamond for electrical neural interfacing • MRI compatibility of nanocrystalline boron-doped diamond.

  5. Electrochemical detection of biapenem by a boron-doped diamond nanorod electrode%硼掺杂金刚石纳米棒电极对比阿培南的电化学检测研究

    Institute of Scientific and Technical Information of China (English)

    钟萍; 罗代兵; 任雁; 只金芳

    2011-01-01

    Biapenem is a new parenteral carbapenem that has antibacterial activity against a wide range of Gram-positive and -negative bacteria. Electroanalysis of biapenem and was made on a boron-doped diamond nanorod(BDDN ) electrode compared with a planar boron-doped diamond (BDD) electrode under the same conditions. The detection range of the BDDN electrode is wider and the sensitivity(0.038μ,A μM-1 )is higher than that of the BDD electrode(0.028μAμM-1 ). The BDDN electrode displays an amplified response than the flat BDD electrode. The BDDN electrode exhibits excellent electrochemical performance due to its higher e-lectro-active surface area and special nanostructures.%在自制的硅纳米线上采用热丝化学气相沉积方法制备了硼掺杂金刚石纳米棒电极.采用循环伏安及计时电流方法测定了在磷酸缓冲溶液中的药物比阿培南的浓度,灵敏度达到0.038μA μM-1较相同条件下制备得到的普通硼掺杂金刚石电极(0.028μA μM-1)相比有所提高.该纳米棒电极由于特殊的表面形貌,较普通硼掺杂金刚石电极表现出更优异的电化学检测性能.

  6. Functionalization of nanocrystalline diamond films with phthalocyanines

    Energy Technology Data Exchange (ETDEWEB)

    Petkov, Christo [Institute of Nanostructure Technologies and Analytics (INA), Center for Interdisciplinary Nanostructure Science and Technology (CINSaT), University of Kassel (Germany); Reintanz, Philipp M. [Institute of Chemistry, Center for Interdisciplinary Nanostructure Science and Technology (CINSaT), University of Kassel (Germany); Kulisch, Wilhelm [Institute of Nanostructure Technologies and Analytics (INA), Center for Interdisciplinary Nanostructure Science and Technology (CINSaT), University of Kassel (Germany); Degenhardt, Anna Katharina [Institute of Chemistry, Center for Interdisciplinary Nanostructure Science and Technology (CINSaT), University of Kassel (Germany); Weidner, Tobias [Max Planck Institute for Polymer Research, Mainz (Germany); Baio, Joe E. [School of Chemical, Biological and Environmental Engineering, Oregon State University, Corvallis, OR (United States); Merz, Rolf; Kopnarski, Michael [Institut für Oberflächen- und Schichtanalytik (IFOS), Kaiserslautern (Germany); Siemeling, Ulrich [Institute of Chemistry, Center for Interdisciplinary Nanostructure Science and Technology (CINSaT), University of Kassel (Germany); Reithmaier, Johann Peter [Institute of Nanostructure Technologies and Analytics (INA), Center for Interdisciplinary Nanostructure Science and Technology (CINSaT), University of Kassel (Germany); Popov, Cyril, E-mail: popov@ina.uni-kassel.de [Institute of Nanostructure Technologies and Analytics (INA), Center for Interdisciplinary Nanostructure Science and Technology (CINSaT), University of Kassel (Germany)

    2016-08-30

    Highlights: • Grafting of phthalocyanines on nanocrystalline diamond films with different terminations. • Pc with different central atoms and side chains synthesized and characterized. • Attachment of Pc on H- and O-terminated NCD studied by XPS and NEXAFS spectroscopy. • Orientation order of phthalocyanine molecules on NCD surface. - Abstract: Phthalocyanine (Pc) derivatives containing different central metal atoms (Mn, Cu, Ti) and different peripheral chains were synthesized and comprehensively characterized. Their interaction with nanocrystalline diamond (NCD) films, as-grown by hot-filament chemical vapor deposition or after their modification with oxygen plasma to exchange the hydrogen termination with oxygen-containing groups, was studied by X-ray photoelectron spectroscopy (XPS) and near-edge X-ray absorption fine structure (NEXAFS) spectroscopy. The elemental composition as determined by XPS showed that the Pc were grafted on both as-grown and O-terminated NCD. Mn, Cu and Ti were detected together with N stemming from the Pc ring and S in case of the Ti-Pc from the peripheral ligands. The results for the elemental surface composition and the detailed study of the N 1s, S 2p and O 1s core spectra revealed that Ti-Pc grafted better on as-grown NCD but Cu-Pc and Mn-Pc on O-terminated films. Samples of Mn-Pc on as-grown and O-terminated NCD were further investigated by NEXAFS spectroscopy. The results showed ordering of the grafted molecules, laying flat on the H-terminated NCD surface while only the macrocycles were oriented parallel to the O-terminated surface with the peripheral chains perpendicular to it.

  7. Distinctive glial and neuronal interfacing on nanocrystalline diamond.

    Directory of Open Access Journals (Sweden)

    Amel Bendali

    Full Text Available Direct electrode/neuron interfacing is a key challenge to achieve high resolution of neuronal stimulation required for visual prostheses. Neuronal interfacing on biomaterials commonly requires the presence of glial cells and/or protein coating. Nanocrystalline diamond is a highly mechanically stable biomaterial with a remarkably large potential window for the electrical stimulation of tissues. Using adult retinal cell cultures from rats, we found that glial cells and retinal neurons grew equally well on glass and nanocrystalline diamond. The use of a protein coating increased cell survival, particularly for glial cells. However, bipolar neurons appeared to grow even in direct contact with bare diamond. We investigated whether the presence of glial cells contributed to this direct neuron/diamond interface, by using purified adult retinal ganglion cells to seed diamond and glass surfaces with and without protein coatings. Surprisingly, these fully differentiated spiking neurons survived better on nanocrystalline diamond without any protein coating. This greater survival was indicated by larger cell numbers and the presence of longer neurites. When a protein pattern was drawn on diamond, neurons did not grow preferentially on the coated area, by contrast to their behavior on a patterned glass. This study highlights the interesting biocompatibility properties of nanocrystalline diamond, allowing direct neuronal interfacing, whereas a protein coating was required for glial cell growth.

  8. Distinctive glial and neuronal interfacing on nanocrystalline diamond.

    Science.gov (United States)

    Bendali, Amel; Agnès, Charles; Meffert, Simone; Forster, Valérie; Bongrain, Alexandre; Arnault, Jean-Charles; Sahel, José-Alain; Offenhäusser, Andreas; Bergonzo, Philippe; Picaud, Serge

    2014-01-01

    Direct electrode/neuron interfacing is a key challenge to achieve high resolution of neuronal stimulation required for visual prostheses. Neuronal interfacing on biomaterials commonly requires the presence of glial cells and/or protein coating. Nanocrystalline diamond is a highly mechanically stable biomaterial with a remarkably large potential window for the electrical stimulation of tissues. Using adult retinal cell cultures from rats, we found that glial cells and retinal neurons grew equally well on glass and nanocrystalline diamond. The use of a protein coating increased cell survival, particularly for glial cells. However, bipolar neurons appeared to grow even in direct contact with bare diamond. We investigated whether the presence of glial cells contributed to this direct neuron/diamond interface, by using purified adult retinal ganglion cells to seed diamond and glass surfaces with and without protein coatings. Surprisingly, these fully differentiated spiking neurons survived better on nanocrystalline diamond without any protein coating. This greater survival was indicated by larger cell numbers and the presence of longer neurites. When a protein pattern was drawn on diamond, neurons did not grow preferentially on the coated area, by contrast to their behavior on a patterned glass. This study highlights the interesting biocompatibility properties of nanocrystalline diamond, allowing direct neuronal interfacing, whereas a protein coating was required for glial cell growth.

  9. Distinctive Glial and Neuronal Interfacing on Nanocrystalline Diamond

    Science.gov (United States)

    Bendali, Amel; Agnès, Charles; Meffert, Simone; Forster, Valérie; Bongrain, Alexandre; Arnault, Jean-Charles; Sahel, José-Alain; Offenhäusser, Andreas; Bergonzo, Philippe; Picaud, Serge

    2014-01-01

    Direct electrode/neuron interfacing is a key challenge to achieve high resolution of neuronal stimulation required for visual prostheses. Neuronal interfacing on biomaterials commonly requires the presence of glial cells and/or protein coating. Nanocrystalline diamond is a highly mechanically stable biomaterial with a remarkably large potential window for the electrical stimulation of tissues. Using adult retinal cell cultures from rats, we found that glial cells and retinal neurons grew equally well on glass and nanocrystalline diamond. The use of a protein coating increased cell survival, particularly for glial cells. However, bipolar neurons appeared to grow even in direct contact with bare diamond. We investigated whether the presence of glial cells contributed to this direct neuron/diamond interface, by using purified adult retinal ganglion cells to seed diamond and glass surfaces with and without protein coatings. Surprisingly, these fully differentiated spiking neurons survived better on nanocrystalline diamond without any protein coating. This greater survival was indicated by larger cell numbers and the presence of longer neurites. When a protein pattern was drawn on diamond, neurons did not grow preferentially on the coated area, by contrast to their behavior on a patterned glass. This study highlights the interesting biocompatibility properties of nanocrystalline diamond, allowing direct neuronal interfacing, whereas a protein coating was required for glial cell growth. PMID:24664111

  10. Review: Plasma-enhanced chemical vapor deposition of nanocrystalline diamond

    Directory of Open Access Journals (Sweden)

    Katsuyuki Okada

    2007-01-01

    Full Text Available Nanocrystalline diamond films have attracted considerable attention because they have a low coefficient of friction and a low electron emission threshold voltage. In this paper, the author reviews the plasma-enhanced chemical vapor deposition (PE-CVD of nanocrystalline diamond and mainly focuses on the growth of nanocrystalline diamond by low-pressure PE-CVD. Nanocrystalline diamond particles of 200–700 nm diameter have been prepared in a 13.56 MHz low-pressure inductively coupled CH4/CO/H2 plasma. The bonding state of carbon atoms was investigated by ultraviolet-excited Raman spectroscopy. Electron energy loss spectroscopy identified sp2-bonded carbons around the 20–50 nm subgrains of nanocrystalline diamond particles. Plasma diagnostics using a Langmuir probe and the comparison with plasma simulation are also reviewed. The electron energy distribution functions are discussed by considering different inelastic interaction channels between electrons and heavy particles in a molecular CH4/H2 plasma.

  11. Self-composite comprised of nanocrystalline diamond and a non-diamond component useful for thermoelectric applications

    Science.gov (United States)

    Gruen, Dieter M.

    2009-08-11

    One provides nanocrystalline diamond material that comprises a plurality of substantially ordered diamond crystallites that are sized no larger than about 10 nanometers. One then disposes a non-diamond component within the nanocrystalline diamond material. By one approach this non-diamond component comprises an electrical conductor that is formed at the grain boundaries that separate the diamond crystallites from one another. The resultant nanowire is then able to exhibit a desired increase with respect to its ability to conduct electricity while also preserving the thermal conductivity behavior of the nanocrystalline diamond material.

  12. Functionalization of nanocrystalline diamond films with phthalocyanines

    Science.gov (United States)

    Petkov, Christo; Reintanz, Philipp M.; Kulisch, Wilhelm; Degenhardt, Anna Katharina; Weidner, Tobias; Baio, Joe E.; Merz, Rolf; Kopnarski, Michael; Siemeling, Ulrich; Reithmaier, Johann Peter; Popov, Cyril

    2016-08-01

    Phthalocyanine (Pc) derivatives containing different central metal atoms (Mn, Cu, Ti) and different peripheral chains were synthesized and comprehensively characterized. Their interaction with nanocrystalline diamond (NCD) films, as-grown by hot-filament chemical vapor deposition or after their modification with oxygen plasma to exchange the hydrogen termination with oxygen-containing groups, was studied by X-ray photoelectron spectroscopy (XPS) and near-edge X-ray absorption fine structure (NEXAFS) spectroscopy. The elemental composition as determined by XPS showed that the Pc were grafted on both as-grown and O-terminated NCD. Mn, Cu and Ti were detected together with N stemming from the Pc ring and S in case of the Ti-Pc from the peripheral ligands. The results for the elemental surface composition and the detailed study of the N 1s, S 2p and O 1s core spectra revealed that Ti-Pc grafted better on as-grown NCD but Cu-Pc and Mn-Pc on O-terminated films. Samples of Mn-Pc on as-grown and O-terminated NCD were further investigated by NEXAFS spectroscopy. The results showed ordering of the grafted molecules, laying flat on the H-terminated NCD surface while only the macrocycles were oriented parallel to the O-terminated surface with the peripheral chains perpendicular to it.

  13. Ferromagnetism appears in nitrogen implanted nanocrystalline diamond films

    Energy Technology Data Exchange (ETDEWEB)

    Remes, Zdenek [Institute of Physics ASCR v.v.i., Cukrovarnicka 10, 162 00 Prague 6 (Czech Republic); Sun, Shih-Jye, E-mail: sjs@nuk.edu.tw [Department of Applied Physics, National University of Kaohsiung, Kaohsiung 811, Taiwan (China); Varga, Marian [Department of Applied Physics, National University of Kaohsiung, Kaohsiung 811, Taiwan (China); Chou, Hsiung [Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan (China); Hsu, Hua-Shu [Department of Applied Physics, National Pingtung University of Education, Pingtung 900, Taiwan (China); Kromka, Alexander [Department of Applied Physics, National University of Kaohsiung, Kaohsiung 811, Taiwan (China); Horak, Pavel [Nuclear Physics Institute, 250 68 Rez (Czech Republic)

    2015-11-15

    The nanocrystalline diamond films turn to be ferromagnetic after implanting various nitrogen doses on them. Through this research, we confirm that the room-temperature ferromagnetism of the implanted samples is derived from the measurements of magnetic circular dichroism (MCD) and superconducting quantum interference device (SQUID). Samples with larger crystalline grains as well as higher implanted doses present more robust ferromagnetic signals at room temperature. Raman spectra indicate that the small grain-sized samples are much more disordered than the large grain-sized ones. We propose that a slightly large saturated ferromagnetism could be observed at low temperature, because the increased localization effects have a significant impact on more disordered structure. - Highlights: • Nitrogen implanted nanocrystalline diamond films exhibit ferromagnetism at room temperature. • Nitrogen implants made a Raman deviation from the typical nanocrystalline diamond films. • The ferromagnetism induced from the structure distortion is dominant at low temperature.

  14. A multidimensional high performance liquid chromatography method coupled with amperometric detection using a boron-doped diamond electrode for the simultaneous determination of sulfamethoxazole and trimethoprim in bovine milk

    Energy Technology Data Exchange (ETDEWEB)

    Andrade, Leonardo S.; Moraes, Marcela C. de; Rocha-Filho, Romeu C.; Fatibello-Filho, Orlando [Departamento de Quimica, Universidade Federal de Sao Carlos, C.P. 676, 13560-970 Sao Carlos - SP (Brazil); Cass, Quezia B., E-mail: quezia@pesquisador.cnpq.br [Departamento de Quimica, Universidade Federal de Sao Carlos, C.P. 676, 13560-970 Sao Carlos - SP (Brazil)

    2009-11-10

    The development and validation of a multidimensional HPLC method using an on-line clean-up column coupled with amperometric detection employing a boron-doped diamond (BDD) electrode for the simultaneous determination of sulfamethoxazole (SMX) and trimethoprim (TMP) in bovine milk are presented. Aliquots of pre-prepared skim-milk samples were directly injected into a RAM octyl-BSA column in order to remove proteins that otherwise would interfere with milk analysis. After exclusion of the milk proteins, SMX and TMP were transferred to the analytical column (an octyl column) and the separation of the compounds from one another and from other endogenous milk components was achieved. SMX and TMP were detected amperometrically at 1.25 V vs. Ag/AgCl (3.0 mol L{sup -1} KCl). Results with good linearity in the concentration ranges 50-800 and 25-400 {mu}g L{sup -1} for SMX and TMP, respectively, were obtained and no fouling of the BDD electrode was observed within the experimental period of several hours. The intra- and inter-assay coefficients of variation were less than 10% for both drugs and the obtained LOD values for SMX and TMP were 25.0 and 15.0 {mu}g L{sup -1}, respectively.

  15. Phenol removal from wastewaters by electrochemical oxidation using boron doped diamond (BDD) and Ti/Ti{sub 0.7}Ru{sub 0.3}O{sub 2} DSA Registered-Sign electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Britto-Costa, P.H.; Ruotolo, L.A.M., E-mail: pluis@ufscar.br [Universidade Federal de Sao Carlos (UFSCAR), SP (Brazil). Dept. de Engenharia Quimica

    2012-10-15

    Industrial wastewater containing non-biodegradable organic pollutants consists of highly toxic effluents whose treatment is necessary due to environmental and economical restrictions. In order to treat these effluents, an electrochemical process using a dimensionally stable anode (DSA Registered-Sign ) and boron-doped diamond (BDD) electrode was studied. The performance of these electrodes for COD removal from aqueous phenol solution was evaluated in the absence and presence of different chloride concentrations. The results showed that DSA Registered-Sign could be successfully used to remove COD when high chloride concentration (3035 mg L{sup -1}Cl{sup -}) and mild current density are employed (50 mA cm{sup -2}). On the other hand, the presence of chloride did not have the same significant effect on the COD depletion rate using BDD; however, under mild conditions (50 mA cm{sup -2}, 0.190 m s{sup -1}), the addition of 607 mg L{sup -1} Cl{sup -} improved the COD removal by approximately 52% after 8 hours of electrolysis. The effect of current density (i) and flow velocity (v) were also studied, and it was verified that they have an important role on the process performance, especially when DSA Registered-Sign is used. (author)

  16. New route to the fabrication of nanocrystalline diamond films

    Energy Technology Data Exchange (ETDEWEB)

    Varshney, Deepak, E-mail: deepvar20@gmail.com; Morell, Gerardo [Institute of Functional Nanomaterials, University of Puerto Rico, San Juan, Puerto Rico 00931, Puerto Rico (United States); Department of Physics, University of Puerto Rico, San Juan, PO Box 70377, Puerto Rico 00936, Puerto Rico (United States); Palomino, Javier; Resto, Oscar [Department of Physics, University of Puerto Rico, San Juan, PO Box 70377, Puerto Rico 00936, Puerto Rico (United States); Gil, Jennifer [Department of Chemistry, University of Puerto Rico, San Juan, Puerto Rico 00936, Puerto Rico (United States); Weiner, Brad R. [Institute of Functional Nanomaterials, University of Puerto Rico, San Juan, Puerto Rico 00931, Puerto Rico (United States); Department of Chemistry, University of Puerto Rico, San Juan, Puerto Rico 00936, Puerto Rico (United States)

    2014-02-07

    Nanocrystalline diamond (NCD) thin films offer applications in various fields, but the existing synthetic approaches are cumbersome and destructive. A major breakthrough has been achieved by our group in the direction of a non-destructive, scalable, and economic process of NCD thin-film fabrication. Here, we report a cheap precursor for the growth of nanocrystalline diamond in the form of paraffin wax. We show that NCD thin films can be fabricated on a copper support by using simple, commonplace paraffin wax under reaction conditions of Hot Filament Chemical Vapor Deposition (HFCVD). Surprisingly, even the presence of any catalyst or seeding that has been conventionally used in the state-of-the-art is not required. The structure of the obtained films was analyzed by scanning electron microscopy and transmission electron microscopy. Raman spectroscopy and electron energy-loss spectroscopy recorded at the carbon K-edge region confirm the presence of nanocrystalline diamond. The process is a significant step towards cost-effective and non-cumbersome fabrication of nanocrystalline diamond thin films for commercial production.

  17. Investigation on mechanical property of HFCVD boron-doped composite diamond film%HFCVD 硼掺杂复合金刚石薄膜的机械性能研究

    Institute of Scientific and Technical Information of China (English)

    王新昶; 申笑天; 孙方宏; 沈彬

    2015-01-01

    综合不同种类单层金刚石薄膜的典型优点制备的复合金刚石薄膜具有优异的综合性能,本研究对比了 UMCD、BDMCD、UFGD 和两类新型硼掺杂复合金刚石薄膜的机械性能。研究结果表明:硼掺杂技术可有效改善金刚石薄膜的附着性能,因此 BDM-UMCD 和 BDM-UM-UFGCD 薄膜均具有较好的附着性能;表层为 UMCD 薄膜的 BDM-UMCD 薄膜(84.354 GPa)具有 UMCD 薄膜(82.058 GPa)表面硬度极高的优点,但是表面粗糙度较高(R a 304.41 nm)、表面可抛光性较差;相比之下,表层为 UFGD 薄膜的BDM-UM-UFGCD 薄膜则具有 UFGD 薄膜优异的表面光洁度(R a 104.71 nm)和表面可抛光性,此外由于硬度极高的中间层 UMCD 对于表层硬度的补充作用,该复合薄膜还具有相比于单层 UFGD 薄膜(67.925 GPa)而言较高的表面硬度(72.657 GPa)。%The composite diamond films combining typical merits of different types of monolayer diamond films show excellent comprehensive performance In this article mechanical properties of UMCD BDMCD UFGCD and two novel boron-doped composite diamond films were respectively evaluated and compared Research results showed that the boron doping technology could significantly improve the film-substrate adhesion so BDM-UMCD and BDM-UM-UFGCD films both presented favorable adhesive strength The surface layer of the BDM-UMCD film was UMCD layer consequently such the composite film had extremely high surface hardness 84 354 GPa similar to the monolayer UMCD film 82 058 GPa relatively high surface roughness R a 304 41 nm and bad polishability By contrast the BDM-UM-UFGCD film with the UFGD layer as the surface performed nice surface smoothness R a 104 71 nm and polishability as well as relatively higher surface hardness 72 657 GPa than the monolayer UFGD film 67 925 GPa attributed to the reinforcement effect of the ultra-hard middle UMCD layer.

  18. Superconductivity in heavily boron-doped silicon carbide

    Directory of Open Access Journals (Sweden)

    Markus Kriener, Takahiro Muranaka, Junya Kato, Zhi-An Ren, Jun Akimitsu and Yoshiteru Maeno

    2008-01-01

    Full Text Available The discoveries of superconductivity in heavily boron-doped diamond in 2004 and silicon in 2006 have renewed the interest in the superconducting state of semiconductors. Charge-carrier doping of wide-gap semiconductors leads to a metallic phase from which upon further doping superconductivity can emerge. Recently, we discovered superconductivity in a closely related system: heavily boron-doped silicon carbide. The sample used for that study consisted of cubic and hexagonal SiC phase fractions and hence this led to the question which of them participated in the superconductivity. Here we studied a hexagonal SiC sample, free from cubic SiC phase by means of x-ray diffraction, resistivity, and ac susceptibility.

  19. Tailoring nanocrystalline diamond coated on titanium for osteoblast adhesion.

    Science.gov (United States)

    Pareta, Rajesh; Yang, Lei; Kothari, Abhishek; Sirinrath, Sirivisoot; Xiao, Xingcheng; Sheldon, Brian W; Webster, Thomas J

    2010-10-01

    Diamond coatings with superior chemical stability, antiwear, and cytocompatibility properties have been considered for lengthening the lifetime of metallic orthopedic implants for over a decade. In this study, an attempt to tailor the surface properties of diamond films on titanium to promote osteoblast (bone forming cell) adhesion was reported. The surface properties investigated here included the size of diamond surface features, topography, wettability, and surface chemistry, all of which were controlled during microwave plasma enhanced chemical-vapor-deposition (MPCVD) processes using CH4-Ar-H2 gas mixtures. The hardness and elastic modulus of the diamond films were also determined. H2 concentration in the plasma was altered to control the crystallinity, grain size, and topography of the diamond coatings, and specific plasma gases (O2 and NH3) were introduced to change the surface chemistry of the diamond coatings. To understand the impact of the altered surface properties on osteoblast responses, cell adhesion tests were performed on the various diamond-coated titanium. The results revealed that nanocrystalline diamond (grain sizes applications.

  20. Femtosecond Laser Crystallization of Boron-doped Amorphous Hydrogenated Silicon Films

    Directory of Open Access Journals (Sweden)

    P.D. Rybalko

    2016-10-01

    Full Text Available Crystallization of amorphous hydrogenated silicon films with femtosecond laser pulses is one of the promising ways to produce nanocrystalline silicon for photovoltaics. The structure of laser treated films is the most important factor determining materials' electric and photoelectric properties. In this work we investigated the effect of femtosecond laser irradiation of boron doped amorphous hydrogenated silicon films with different fluences on crystalline volume fraction and electrical properties of this material. A sharp increase of conductivity and essential decrease of activation energy of conductivity temperature dependences accompany the crystallization process. The results obtained are explained by increase of boron doping efficiency in crystalline phase of modified silicon film.

  1. 掺硼金刚石薄膜电极的氨基化改性及电化学行为%Boron-doped diamond thin-film electrode modified by aminophenyl and its electrochemical behavior

    Institute of Scientific and Technical Information of China (English)

    朱虹; 芶立

    2011-01-01

    Boron-doped diamond thin-film electrode was modified by the electrochemical reduction of aryl diazonium salt to attach aminophenyl group.X ray photoelectron spectroscopy(XPS)indicates the presence of N1s at the surface of electrode.By analyzing the peaks centered at 406 eV and 400 eV,XPS also suggests that nitrophenyl groups are electrochemically reduced to aminophenyl groups.The aminophenyl layer attached onto diamond thin-film electrode was demonstrated by comparing the voltammetric profiles of the Fe(CN)6-3/-4 redox couple at the electrode.The electrochemical behaviors of modified electrode were detected by differential pulse voltammetry(DPV)and cyclic voltammetry.The DPV for simultaneous determination of dopamine and ascorbic acid shows well-separated oxidation peaks with the potential difference about 0.3 V.The plasma protein adsorption at the surface modified electrode blocks electron transfer of Fe(CN)6-3/-4 redox couple.However,it does not affect the detection of dopamine.%采用重氮盐电化学还原的方法对掺硼金刚石薄膜电极进行氨基化改性,光电子能谱(XPS)证明表面N元素的存在,同时可以通过406 eV、400 eV峰强度的变化,证明硝基还原为氨基。以Fe(CN)6-3/-4氧化还原电对为探针,进一步证明了氨基层的存在。采用循环伏安法和差分脉冲伏安法研究了改性后电极的电化学行为。通过分别检测多巴胺和抗坏血酸以及它们的混合溶液,表明选用差分脉冲伏安法,氨基化改性掺硼金刚石薄膜电极能够有效分离检测两者的氧化峰,分离后两峰电势差约为0.3 V。电极表面吸附血浆蛋白后,阻碍了Fe(CN)6-3/-4氧化还原对的电子传递,但是并不妨碍多巴胺的检测。

  2. Nanomechanical Resonant Structures in Nanocrystalline Diamond

    Science.gov (United States)

    2002-12-02

    poses, diamond may be one of the most desirable materials for many NEMS applications because it is chemically very resistant, has a high hardness...Redistribution subject Then, the substrate is removed from the chamber and is it treated in an ultrasonic bath of nanodiamond powder dis- persed in

  3. Synthesis and characterization of a nanocrystalline diamond aerogel.

    Science.gov (United States)

    Pauzauskie, Peter J; Crowhurst, Jonathan C; Worsley, Marcus A; Laurence, Ted A; Kilcoyne, A L David; Wang, Yinmin; Willey, Trevor M; Visbeck, Kenneth S; Fakra, Sirine C; Evans, William J; Zaug, Joseph M; Satcher, Joe H

    2011-05-24

    Aerogel materials have myriad scientific and technological applications due to their large intrinsic surface areas and ultralow densities. However, creating a nanodiamond aerogel matrix has remained an outstanding and intriguing challenge. Here we report the high-pressure, high-temperature synthesis of a diamond aerogel from an amorphous carbon aerogel precursor using a laser-heated diamond anvil cell. Neon is used as a chemically inert, near-hydrostatic pressure medium that prevents collapse of the aerogel under pressure by conformally filling the aerogel's void volume. Electron and X-ray spectromicroscopy confirm the aerogel morphology and composition of the nanodiamond matrix. Time-resolved photoluminescence measurements of recovered material reveal the formation of both nitrogen- and silicon- vacancy point-defects, suggesting a broad range of applications for this nanocrystalline diamond aerogel.

  4. Field emission from Si tips coated with nanocrystalline diamond films

    Institute of Scientific and Technical Information of China (English)

    WANG Wanlu; LIAO Kejun; LIU Gaobin; MA Yong

    2003-01-01

    The electron field emission from Si tips coated with nanocrystalline diamond films was investigated. The Si tips were formed by plasma etching, and nano-diamond films were deposited on the Si tips by hot filament chemical vapor deposition. The radius of curvature for the Si tips was averagely about 50 nm. The microstructure of the diamond films was examined by scanning electron microscopy and Raman spectroscopy. The field emission properties of the samples were measured in an ionpumped vacuum chamber at a pressure of 10-6 Pa. The experimental results showed that the nanostructured films on Si tips exhibited a lower value of the turn-on electric field than those on flat Si substrates. It was found that the tip shape and nondiamond phase in the films had a significant effect on the field emission properties of the films.

  5. Synthesis and characterization of a nanocrystalline diamond aerogel

    Energy Technology Data Exchange (ETDEWEB)

    Pauzauskie, Peter J.; Crowhurst, Jonathan C.; Worsley, Marcus A.; Laurence, Ted A.; Kilcoyne, A. L. David; Wang, Yinmin; Willey, Trevor M.; Visbeck, Kenneth S.; Fakra, Sirine C.; Evans, William J.; Zaug, Joseph M.; Satcher, Jr., Joe H.

    2011-07-06

    Aerogel materials have myriad scientific and technological applications due to their large intrinsic surface areas and ultralow densities. However, creating a nanodiamond aerogel matrix has remained an outstanding and intriguing challenge. Here we report the high-pressure, high-temperature synthesis of a diamond aerogel from an amorphous carbon aerogel precursor using a laser-heated diamond anvil cell. Neon is used as a chemically inert, near-hydrostatic pressure medium that prevents collapse of the aerogel under pressure by conformally filling the aerogel's void volume. Electron and X-ray spectromicroscopy confirm the aerogel morphology and composition of the nanodiamond matrix. Time-resolved photoluminescence measurements of recovered material reveal the formation of both nitrogen- and silicon- vacancy point-defects, suggesting a broad range of applications for this nanocrystalline diamond aerogel.

  6. Ionization equilibrium at the transition from valence-band to acceptor-band migration of holes in boron-doped diamond

    Science.gov (United States)

    Poklonski, N. A.; Vyrko, S. A.; Poklonskaya, O. N.; Kovalev, A. I.; Zabrodskii, A. G.

    2016-06-01

    A quasi-classical model of ionization equilibrium in the p-type diamond between hydrogen-like acceptors (boron atoms which substitute carbon atoms in the crystal lattice) and holes in the valence band (v-band) is proposed. The model is applicable on the insulator side of the insulator-metal concentration phase transition (Mott transition) in p-Dia:B crystals. The densities of the spatial distributions of impurity atoms (acceptors and donors) and of holes in the crystal are considered to be Poissonian, and the fluctuations of their electrostatic potential energy are considered to be Gaussian. The model accounts for the decrease in thermal ionization energy of boron atoms with increasing concentration, as well as for electrostatic fluctuations due to the Coulomb interaction limited to two nearest point charges (impurity ions and holes). The mobility edge of holes in the v-band is assumed to be equal to the sum of the threshold energy for diffusion percolation and the exchange energy of the holes. On the basis of the virial theorem, the temperature Tj is determined, in the vicinity of which the dc band-like conductivity of holes in the v-band is approximately equal to the hopping conductivity of holes via the boron atoms. For compensation ratio (hydrogen-like donor to acceptor concentration ratio) K ≈ 0.15 and temperature Tj, the concentration of "free" holes in the v-band and their jumping (turbulent) drift mobility are calculated. Dependence of the differential energy of thermal ionization of boron atoms (at the temperature 3Tj/2) as a function of their concentration N is calculated. The estimates of the extrapolated into the temperature region close to Tj hopping drift mobility of holes hopping from the boron atoms in the charge states (0) to the boron atoms in the charge states (-1) are given. Calculations based on the model show good agreement with electrical conductivity and Hall effect measurements for p-type diamond with boron atom concentrations in the

  7. Electro-Fenton, UVA photoelectro-Fenton and solar photoelectro-Fenton degradation of the drug ibuprofen in acid aqueous medium using platinum and boron-doped diamond anodes

    Energy Technology Data Exchange (ETDEWEB)

    Skoumal, Marcel; Rodriguez, Rosa Maria; Cabot, Pere Lluis; Centellas, Francesc; Garrido, Jose Antonio; Arias, Conchita [Laboratori d' Electroquimica dels Materials i del Medi Ambient, Departament de Quimica Fisica, Facultat de Quimica, Universitat de Barcelona, Marti i Franques 1-11, 08028 Barcelona (Spain); Brillas, Enric [Laboratori d' Electroquimica dels Materials i del Medi Ambient, Departament de Quimica Fisica, Facultat de Quimica, Universitat de Barcelona, Marti i Franques 1-11, 08028 Barcelona (Spain)], E-mail: brillas@ub.edu

    2009-02-28

    The degradation of a 41 mg dm{sup -3} ibuprofen (2-(4-isobutylphenyl)propionic acid) solution of pH 3.0 has been comparatively studied by electrochemical advanced oxidation processes (EAOPs) like electro-Fenton, UVA photoelectro-Fenton and solar photoelectro-Fenton at constant current density. Experiments were performed in a one-compartment cell with a Pt or boron-doped diamond (BDD) anode and an O{sub 2}-diffusion cathode. Heterogeneous hydroxyl radical ({center_dot}OH) is generated at the anode surface from water oxidation, while homogeneous {center_dot}OH is formed from Fenton's reaction between Fe{sup 2+} and H{sub 2}O{sub 2} generated at the cathode, being its production strongly enhanced from photo-Fenton reaction induced by sunlight. Higher mineralization is attained in all methods using BDD instead Pt, because the former produces greater quantity of {center_dot}OH enhancing the oxidation of pollutants. The mineralization rate increases under UVA and solar irradiation by the rapid photodecomposition of complexes of Fe(III) with acidic intermediates. The most potent method is solar photoelectro-Fenton with BDD giving 92% mineralization due to the formation of a small proportion of highly persistent final by-products. The effect of Fe{sup 2+} content, pH and current density on photoelectro-Fenton degradation has been studied. The ibuprofen decay always follows a pseudo-first-order kinetics and its destruction rate is limited by current density and UV intensity. Aromatics such as 1-(1-hydroxyethyl)-4-isobutylbenzene, 4-isobutylacetophenone, 4-isobutylphenol and 4-ethylbenzaldehyde, and carboxylic acids such as pyruvic, acetic, formic and oxalic have been identified as oxidation by-products. Oxalic acid is the ultimate by-product and the fast photodecarboxylation of its complexes with Fe(III) under UVA or solar irradiation explains the higher oxidation power of photoelectro-Fenton methods in comparison to electro-Fenton procedures.

  8. 用于航天器冷凝水处理的硼掺杂金刚石电极的制备及应用%Fabrication and Application of Boron Doped Diamond Electrodes in Condensate Water Purification in Spacecraft

    Institute of Scientific and Technical Information of China (English)

    李浩; 杨彬; 李中坚; 王传增; 韩松; 雷乐成

    2013-01-01

    Objective To effectively apply boron doped diamond (BDD) electrodes through electrochemical catalytic oxidation technology in the treatment of condensate water in spacecraft.Methods The authors manufactured a large area,equally distributed BDD electrode deposited on the Nb substrate by hot filament chemical vapor deposition (HFCVD).Then it was used to process simulated condensate water.Results Simulated condensate water 200 mL was processed with the current density of 10,13,15 mA/cm2.When the percentage of TOC removal was 80%,the required time were 150,120,100 min,and power consumption were 7.48,11.4,14.59 W,respectively.After treatment,all the alcohol type of materials in condensate water were oxidzed and no obvious delamination of the film was observed.Conclusion Compared with the PbO2 electrode and the Nb/BDD electrode,the BDD electrode has remarkable advantages in stability and treatment efficiency.%目的 通过电化学催化氧化技术,将硼掺杂金刚石(BDD)电极高效应用于航天器冷凝水的处理工作中.方法 采用热丝化学气相沉积(HFCVD)技术在铌板上制备得到了大面积、均匀分布的BDD电极,并将制得的BDD电极用于降解模拟冷凝水实验.结果 模拟冷凝水处理量为200 mL,在电流密度为10,13,15 mA/cm2条件下,达到80% TOC去除率分别需要150,120,100 min,功耗为7.48,11.4,14.59W;对处理后的冷凝水成分分析发现,冷凝水中原有的醇类物质被完全氧化;而且电极在连续运行之后也并未发现明显的剥落现象.结论 制得的BDD电极与二氧化铅电极相比,无论是在稳定性还是处理效率方面,都具有显著的优势.

  9. Boron doping a semiconductor particle

    Science.gov (United States)

    Stevens, Gary Don; Reynolds, Jeffrey Scott; Brown, Louanne Kay

    1998-06-09

    A method (10,30) of boron doping a semiconductor particle using boric acid to obtain a p-type doped particle. Either silicon spheres or silicon powder is mixed with a diluted solution of boric acid having a predetermined concentration. The spheres are dried (16), with the boron film then being driven (18) into the sphere. A melt procedure mixes the driven boron uniformly throughout the sphere. In the case of silicon powder, the powder is metered out (38) into piles and melted/fused (40) with an optical furnace. Both processes obtain a p-type doped silicon sphere with desired resistivity. Boric acid is not a restricted chemical, is inexpensive, and does not pose any special shipping, handling, or disposal requirements.

  10. Nanocrystalline diamond in carbon implanted SiO{sub 2}.

    Energy Technology Data Exchange (ETDEWEB)

    Tsoi, K.A.; Prawer, S.; Nugent, K.W.; Walker, R. J.; Weiser, P.S. [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1996-12-31

    Recently, it was reported that nanocrystalline diamond can be produced via laser annealing of a high dose C implanted fused quartz (SiO{sub 2}) substrate. The aim of this investigation is to reproduce this result on higher C{sup +} dose samples and the non-implanted silicon sample, as well as optimise the power range and annealing time for the production of these nanocrystals of diamond. In order to provide a wide range of laser powers the samples were annealed using an Ar ion Raman laser. The resulting annealed spots were analysed using scanning electron microscopy (SEM) and Raman analysis. These techniques are employed to determine the type of bonding produced after laser annealing has occurred. 4 refs., 5 figs.

  11. Investigating the role of hydrogen in ultra-nanocrystalline diamond thin film growth

    Science.gov (United States)

    Birrell, James; Gerbi, J. E.; Auciello, O. A.; Carlisle, J. A.

    2006-08-01

    Hydrogen has long been known to be critical for the growth of high-quality microcrystalline diamond thin films as well as homoepitaxial single-crystal diamond. A hydrogen-poor growth process that results in ultra-nanocrystalline diamond thin films has also been developed, and it has been theorized that diamond growth with this gas chemistry can occur in the absence of hydrogen. This study investigates the role of hydrogen in the growth of ultra-nanocrystalline diamond thin films in two different regimes. First, we add hydrogen to the gas phase during growth, and observe that there seems to be a competitive growth process occurring between microcrystalline diamond and ultra-nanocrystalline diamond, rather than a simple increase in the grain size of ultra-nanocrystalline diamond. Second, we remove hydrogen from the plasma by changing the hydrocarbon precursor from methane to acetylene and observe that there does seem to be some sort of lower limit to the amount of hydrogen that can sustain ultra-nanocrystalline diamond growth. We speculate that this is due to the amount of hydrogen needed to stabilize the surface of the growing diamond nanocrystals.

  12. Biological evaluation of ultrananocrystalline and nanocrystalline diamond coatings.

    Science.gov (United States)

    Skoog, Shelby A; Kumar, Girish; Zheng, Jiwen; Sumant, Anirudha V; Goering, Peter L; Narayan, Roger J

    2016-12-01

    Nanostructured biomaterials have been investigated for achieving desirable tissue-material interactions in medical implants. Ultrananocrystalline diamond (UNCD) and nanocrystalline diamond (NCD) coatings are the two most studied classes of synthetic diamond coatings; these materials are grown using chemical vapor deposition and are classified based on their nanostructure, grain size, and sp(3) content. UNCD and NCD are mechanically robust, chemically inert, biocompatible, and wear resistant, making them ideal implant coatings. UNCD and NCD have been recently investigated for ophthalmic, cardiovascular, dental, and orthopaedic device applications. The aim of this study was (a) to evaluate the in vitro biocompatibility of UNCD and NCD coatings and (b) to determine if variations in surface topography and sp(3) content affect cellular response. Diamond coatings with various nanoscale topographies (grain sizes 5-400 nm) were deposited on silicon substrates using microwave plasma chemical vapor deposition. Scanning electron microscopy and atomic force microscopy revealed uniform coatings with different scales of surface topography; Raman spectroscopy confirmed the presence of carbon bonding typical of diamond coatings. Cell viability, proliferation, and morphology responses of human bone marrow-derived mesenchymal stem cells (hBMSCs) to UNCD and NCD surfaces were evaluated. The hBMSCs on UNCD and NCD coatings exhibited similar cell viability, proliferation, and morphology as those on the control material, tissue culture polystyrene. No significant differences in cellular response were observed on UNCD and NCD coatings with different nanoscale topographies. Our data shows that both UNCD and NCD coatings demonstrate in vitro biocompatibility irrespective of surface topography.

  13. Ultra-nanocrystalline diamond electrodes: optimization towards neural stimulation applications.

    Science.gov (United States)

    Garrett, David J; Ganesan, Kumaravelu; Stacey, Alastair; Fox, Kate; Meffin, Hamish; Prawer, Steven

    2012-02-01

    Diamond is well known to possess many favourable qualities for implantation into living tissue including biocompatibility, biostability, and for some applications hardness. However, conducting diamond has not, to date, been exploited in neural stimulation electrodes due to very low electrochemical double layer capacitance values that have been previously reported. Here we present electrochemical characterization of ultra-nanocrystalline diamond electrodes grown in the presence of nitrogen (N-UNCD) that exhibit charge injection capacity values as high as 163 µC cm(-2) indicating that N-UNCD is a viable material for microelectrode fabrication. Furthermore, we show that the maximum charge injection of N-UNCD can be increased by tailoring growth conditions and by subsequent electrochemical activation. For applications requiring yet higher charge injection, we show that N-UNCD electrodes can be readily metalized with platinum or iridium, further increasing charge injection capacity. Using such materials an implantable neural stimulation device fabricated from a single piece of bio-permanent material becomes feasible. This has significant advantages in terms of the physical stability and hermeticity of a long-term bionic implant.

  14. Electro-catalytic Oxidation of Humidity Condensate Wastewater at Boron-doped Diamond in Simulated Space Station.%BDD电催化氧化处理模拟空间站冷凝废水的实验研究

    Institute of Scientific and Technical Information of China (English)

    王传增; 余青霓; 周抗寒; 陈善广; 孙德智

    2011-01-01

    目的 为验证以硼掺杂的金刚石电极(BDD)作为阳极电催化氧化处理空间站中产生的冷凝废水的技术适用性.方法 比较了分别以BDD,PbO2和RuO2作为阳极去除模拟冷凝水中TOC的性能,并单独考察BDD作为阳极时的槽电压和通O2等条件对TOC去除的影响.结果 BDD阳极的电催化氧化性能要远好于另外两种电极;增加槽电压有利于提高TOC去除率,但同时也导致了废热、析氢析氧副反应的增加,实际应用中要考虑两者的平衡点进行槽电压的选择;O2的通入加快了传质,提高了醇类向酸的转化,但降低了矿化效率;能耗需求分析显示该工艺技术能够达到节省能耗及保证水质的要求.结论 初步的实验结果显示采用BDD电催化氧化处理冷凝废水是技术可行的.%Objective To verify the feasibility of humidity condensate wastewater treatment by electro-catalytic oxidation at boron-doped diamond (BDD) in space station. Methods We utilized BDD, PbO2 and RuO2 as the anode to oxidize the simulated humidity condensate wastewater. We also investigated the effects of cell voltage and O2 feeding on TOC removal with BDD anode. Results The performance of BDD anode electro-catalytic oxidation was much better than the other two electrodes. The increase of cell voltage was conducive for TOC removal. It also increased the waste heat and occurrences of side reaction such as oxygen and hydrogen production. The optimum cell voltage should be selected by taking the equilibrium point into consideration. The feeding of 02 accelerated mass transfer, improved the conversion of alcohols to the acids, but decreased the mineralization efficiency. The energy consumption demand analysis for the process showed that it could save energy consumption and also meet the requirements of water quality. Conclusion The results demonstrate that BDD electro-catalytic oxidation is feasible for the treatment of humidity condensate wastewater.

  15. Gas sensing properties of nanocrystalline diamond at room temperature

    Directory of Open Access Journals (Sweden)

    Marina Davydova

    2014-12-01

    Full Text Available This study describes an integrated NH3 sensor based on a hydrogenated nanocrystalline diamond (NCD-sensitive layer coated on an interdigitated electrode structure. The gas sensing properties of the sensor structure were examined using a reducing gas (NH3 at room temperature and were found to be dependent on the electrode arrangement. A pronounced response of the sensor, which was comprised of dense electrode arrays (of 50 µm separation distance, was observed. The sensor functionality was explained by the surface transfer doping effect. Moreover, the three-dimensional model of the current density distribution of the hydrogenated NCD describes the transient flow of electrons between interdigitated electrodes and the hydrogenated NCD surface, that is, the formation of a closed current loop.

  16. Strong adhesion in nanocrystalline diamond films on silicon substrates

    Science.gov (United States)

    Sharda, T.; Umeno, M.; Soga, T.; Jimbo, T.

    2001-05-01

    Strong adhesion is shown to be achieved in the growth of smooth nanocrystalline diamond (NCD) thin films on silicon substrates at 600 °C using biased enhanced growth in microwave plasma chemical vapor deposition. The strong adhesion is evident from the films sustaining compressive stress, which may be as high as 85 GPa. The substrates are bent spherically after deposition, however, films are not peeled off, in spite of having enormous in-plane stress. The strong adhesion may be a result of implanted carbon below the substrate surface with an optimized ion flux density in the initial stages of growth. The compressive stress in the films is shown to be generating from the graphitic and other nondiamond carbon impurities in the films. It was observed that the NCD grain size decreases with biasing hence increasing grain boundary area in the films accommodating more graphitic impurities, which in turn results in an increase in compressive stress in the films.

  17. Study of Nanocrystalline Diamond Film Deposited Rapidly by 500 W Excimer Laser

    Institute of Scientific and Technical Information of China (English)

    PENG Hongyan; SHEN Jiajing; YANG Guilong

    2000-01-01

    High quality nanocrystalline diamond film deposited rapidly by an XeCl excimer laser operated at high laser power (500 W) and repetition rate (300~500 Hz) is presented. A high deposition rate, 250 nm/thousand pulses, was obtained. The effects of laser energy fluence and repetition rate on the deposition of diamond film were investigated.

  18. 直流电弧等离子体喷射CVD硼掺杂金刚石薄膜的制备及电化学性能研究%Electrochemical Properties of Boron Doped Diamond Films Prepared by DC Arc Plasma Jet CVD

    Institute of Scientific and Technical Information of China (English)

    张聪聪; 戴玮; 朱宁; 尹振超; 吴小国; 曲长庆

    2012-01-01

    Boron doped diamond films on silicon ( BDD) substrates were deposited by DC ARC Plasma Jet CVD (Chemical Vapor Deposition) , SEM, XRD and Raman spectroscopy were employed to analyze the morphology, crystal structure and film quality. The SEM and XRD show jointly that the samples are high-quality polycrystalline diamond films composed of micro meter-sized grains. The Raman spectrum show the 1126 cm-1,1336 cm -1and 1560 cm-1, respectively corresponds to peak due to boron incorporation, sp3 carbon peak ,and sp2 carbon peak. Study the effects of pressure and (100) BDD films were deposited at the pressure of 5500 Pa. The resistivity and carrier concentration of the (111) films measured by the Hall system, respectively corresponds to 0. 0095 Ω · cm and 1. 1 × 1020 cm-3. The electrochemical behaviors of the boron-doped diamond film electrode in sodium sulfate solution, potassium ferrocyanide/ potassium ferricyanide solution and dopamine solution are studied. The results show that the' diamond film electrode have a wide electrochemical window of about 4 V and a low background current close to zero in the aqua solution, meanwhile they have a high sensitivity, good stability and reversibility in the dopamine detection experiment which makes boron-doped diamond film obtained by DC ARC Plasma Jet CVD being an excellent material of electrochemical electrode.%采用直流电弧等离子体喷射CVD(Chemical Vapor Deposition)法在硅(100)衬底上制备了(111)占优的掺硼金刚石(BDD)薄膜,研究了压强对薄膜生长的影响,在压强为5500Pa时得到了(100)占优的金刚石薄膜,并用SEM、XRD及拉曼光谱分析了薄膜的表面形貌、晶体结构、薄膜品质.测试结果表明,掺硼金刚石膜具有较好的成膜质量.霍尔测试表明BDD的电阻率为0.0095Ω·cm,载流子浓度为1.1×1020 cm-3;研究了BDD薄膜电极在硫酸钠空白底液、铁氰化钾/亚铁氰化钾溶液和多巴胺溶液中的循环伏安曲线(CVs),发现该金刚

  19. Thermal Conduction Inhomogeneity of Nanocrystalline Diamond Films by Dual-Side Thermoreflectance

    Science.gov (United States)

    2013-01-01

    Applications International Corporation, McLean, VA, 22102 4Naval Research Laboratory, Washington, DC, 20375 Abstract Thin diamond films of thickness...nucleate film growth on a foreign substrate. In this work, the seeds are nanodiamonds (typically 5-10 nm diamond particles) spread at roughly 10 12...performance of integrated nanocrystalline diamond thermal spreaders for high-power transistor applications . ACKNOWLEDGMENT Special thanks are due

  20. Nucleation of nanocrystalline diamond by fragmentation of fullerene precursors.

    Energy Technology Data Exchange (ETDEWEB)

    Gruen, D. M.

    1998-05-04

    Growth of diamond films from C{sub 60}/Ar microwave discharges results in a nanocrystalline microstructure with crystallite sizes in the range 3-10 nm. Heterogeneous nucleation rates of 10{sup 10} cm{sup {minus}2} sec are required to account for the results. The nucleation mechanism presented here fulfills this requirement and is based on the insertion of carbon dimer, C{sub 2}, molecules, produced by fragmentation of C{sub 60}, into the n-bonded dimer rows of the reconstructed (100) surface of diamond. Density functional theory is used to calculate the energetic of C{sub 2} insertion into carbon clusters that model the (100) surface. The reaction of singlet C{sub 2} with the double bond of the C{sub 9}H{sub 12} cluster leads to either carbene structures or a cyclobutynelike structure. At the HF/6-31G* level, the carbene product has a C{sub 2v} structure, while at the B3LYP/6-31G* levels of theory, it has a C{sub s} structure with the inserted C{sub 2} tilted. No barrier for insertion into the C=C double bond of the C{sub 9}H{sub 12} cluster was found at the HF/6-31G* and B3LYP/6-31G* levels of theory. Thus, calculations including correlation energy and geometry optimization indicate that insertion of C{sub 2} into a C=C double bond leads to a large energy lowering, {approximately}120 kcal/mol for a C{sub 9}H{sub 12} cluster, and there is no barrier for insertion.

  1. Sputtered tungsten-based ternary and quaternary layers for nanocrystalline diamond deposition.

    Science.gov (United States)

    Walock, Michael J; Rahil, Issam; Zou, Yujiao; Imhoff, Luc; Catledge, Shane A; Nouveau, Corinne; Stanishevsky, Andrei V

    2012-06-01

    Many of today's demanding applications require thin-film coatings with high hardness, toughness, and thermal stability. In many cases, coating thickness in the range 2-20 microm and low surface roughness are required. Diamond films meet many of the stated requirements, but their crystalline nature leads to a high surface roughness. Nanocrystalline diamond offers a smoother surface, but significant surface modification of the substrate is necessary for successful nanocrystalline diamond deposition and adhesion. A hybrid hard and tough material may be required for either the desired applications, or as a basis for nanocrystalline diamond film growth. One possibility is a composite system based on carbides or nitrides. Many binary carbides and nitrides offer one or more mentioned properties. By combining these binary compounds in a ternary or quaternary nanocrystalline system, we can tailor the material for a desired combination of properties. Here, we describe the results on the structural and mechanical properties of the coating systems composed of tungsten-chromium-carbide and/or nitride. These WC-Cr-(N) coatings are deposited using magnetron sputtering. The growth of adherent nanocrystalline diamond films by microwave plasma chemical vapor deposition has been demonstrated on these coatings. The WC-Cr-(N) and WC-Cr-(N)-NCD coatings are characterized with atomic force microscopy and SEM, X-ray diffraction, X-ray photoelectron spectroscopy, Raman spectroscopy, and nanoindentation.

  2. Nanocrystalline Diamond Films Deposited by Electron Assisted Hot Filament Chemical Vapor Deposition

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    Nanocrystalline diamond films were deposited on polished Si wafer surface with electron assisted hot filament chemical vapor deposition at 1 kPa gas pressure, the deposited films were characterized and observed by Raman spectrum, X-ray diffraction, atomic force microscopy and semiconductor characterization system. The results show that when 8 A bias current is applied for 5 h, the surface roughness decreases to 28.5 nm. After 6 and 8 A bias current are applied for 1 h, and the nanocrystalline films deposition continue for 4 h with 0 A bias current at 1 kPa gas pressure. The nanocrystalline diamond films with 0.5×109 and 1×1010 Ω·cm resistivity respectively are obtained. It is demonstrated that electron bombardment plays an important role of nucleation to deposit diamond films with smooth surface and high resistivity.

  3. Patterned hydrophobic and hydrophilic surfaces of ultra-smooth nanocrystalline diamond layers

    Science.gov (United States)

    Mertens, M.; Mohr, M.; Brühne, K.; Fecht, H. J.; Łojkowski, M.; Święszkowski, W.; Łojkowski, W.

    2016-12-01

    In this work, we show that ultra nanocrystalline diamond (UNCD) surfaces have been modified to add them hydrophobic and hydrophilic properties. The nanocrystalline diamond films were deposited using the hot filament chemical vapor deposition (HFCVD) technique. This allows growing diamond on different substrates which can be even 3D or structured. Silicon and, for optical applications, transparent quartz glass are the preferred substrates for UNCD layers growth. Fluorine termination leads to strong hydrophobic properties as indicated by a high contact angle for water of more than 100°. Hydrogen termination shows lesser hydrophobic behavior. Hydrophilic characteristics has been realised with oxygen termination. X-ray photoelectron spectroscopy (XPS) and energy dispersive X-ray spectroscopy (EDX) measurements confirm the oxygen and fluorine- termination on the nanocrystalline diamond surface. Further, by micropatterning using photolithography, multi-terminated layers have been created with both hydrophobic and hydrophilic areas. In addition, we have shown that retermination is achieved, and the properties of the surface have been changed from hydrophobic to hydrophilic and vice versa. Micro- roughness and stress in the grown film influences slightly the wetting angle as well. The opportunity to realize local differences in hydrophobicity on nanocrystalline diamond layers, in any size or geometry, offers interesting applications for example in microbiological investigations. Multi-terminated arrays show identical surface roughness and at the same time differences in hydrophobicity. These arrays have been visualized with scanning electron microscopy (SEM) and lateral force microscopy (LFM).

  4. Stress control of heterogeneous nanocrystalline diamond sphere through pressure-temperature tuning

    Science.gov (United States)

    Ding, Wei; Han, Jingjing; Hu, Qiwei; Chen, Yang; Liu, Fangming; Liu, Yinjuan; Gou, Li; He, Duanwei; Zhan, Guodong

    2017-03-01

    The hollow nanocrystalline diamond (NCD) sphere, a promising ablator material for inertial confinement fusion capsule, is generally fabricated by the chemical vapor deposition method. Herein, we report on a method to transform hydrogenated tetrahedral amorphous carbon coatings on spherical molybdenum (Mo) substrates into nanocrystalline diamond films via a designed high pressure high temperature (HPHT) treatment that balances the mismatch in the thermal expansion coefficient between a diamond coating and the Mo substrate through the difference in the bulk modulus. The results show that the density and strength of the diamond shell increase significantly and the residual stress is eliminated as well. The methodology of the designed HPHT treatment can not only provide an alternative way to fabricate NCD spheres but also can apply to other heterogeneous material stress control applications.

  5. Nanocrystalline diamond--an excellent platform for life science applications.

    Science.gov (United States)

    Kloss, Frank R; Najam-Ul-Haq, Muhammed; Rainer, Matthias; Gassner, Robert; Lepperdinger, Günter; Huck, Christian W; Bonn, Günther; Klauser, Frederik; Liu, Xianjie; Memmel, Norbert; Bertel, Erminald; Garrido, Jose A; Steinmüller-Nethl, Doris

    2007-12-01

    Nanocrystalline diamond (NCD) has recently been successfully utilized in a variety of life science applications. NCD films are favorable and salubrious substrates for cells during cultivation. Therefore NCD has also been employed in tissue engineering strategies. NCD as reported in this contribution was grown by means of a modified hot-filament chemical vapor deposition technique, which results in less than 3% sp2-hybridization and yields grain sizes of 5-20 nm. After production the NCD surface was rather hydrophobic, however it could be efficiently refined to exhibit more hydrophilic properties. Changing of the surface structure was found to be an efficient means to influence growth and differentiation capacity of a variety of cells. The particular needs for any given cell type has to be proven empirically. Yet flexible features of NCD appear to be superior to plastic surfaces which can be hardly changed in quality. Besides its molecular properties, crystal structural peculiarities of NCD appear to influence cell growth as well. In our attempt to facilitate, highly specialized applications in biomedicine, we recently discovered that growth factors can be tightly bound to NCD by mere physisorption. Hence, combination of surface functionalization together with further options to coat NCD with any kind of three-dimensional structure opens up new avenues for many more applications. In fact, high through-put protein profiling of early disease stages may become possible from serum samples, because proteins bound to NCD can now be efficiently analyzed by MALDI/TOF-MS. Given these results, it is to be presumed that the physical properties and effective electrochemical characteristics of NCD will allow tailoring devices suitable for many more diagnostic as well as therapeutic applications.

  6. Method to grow pure nanocrystalline diamond films at low temperatures and high deposition rates

    Science.gov (United States)

    Carlisle, John A.; Gruen, Dieter M.; Auciello, Orlando; Xiao, Xingcheng

    2009-07-07

    A method of depositing nanocrystalline diamond film on a substrate at a rate of not less than about 0.2 microns/hour at a substrate temperature less than about 500.degree. C. The method includes seeding the substrate surface with nanocrystalline diamond powder to an areal density of not less than about 10.sup.10sites/cm.sup.2, and contacting the seeded substrate surface with a gas of about 99% by volume of an inert gas other than helium and about 1% by volume of methane or hydrogen and one or more of acetylene, fullerene and anthracene in the presence of a microwave induced plasma while maintaining the substrate temperature less than about 500.degree. C. to deposit nanocrystalline diamond on the seeded substrate surface at a rate not less than about 0.2 microns/hour. Coatings of nanocrystalline diamond with average particle diameters of less than about 20 nanometers can be deposited with thermal budgets of 500.degree. C.-4 hours or less onto a variety of substrates such as MEMS devices.

  7. Impact of nitrogen doping on growth and hydrogen impurity incorporation of thick nanocrystalline diamond films

    Institute of Scientific and Technical Information of China (English)

    Gu Li-Ping; Tang Chun-Jiu; Jiang Xue-Fan; J.L.Pintob

    2011-01-01

    A much larger amount of bonded hydrogen was found in thick nanocrystalline diamond (NCD) films produced by only adding 0.24% N2 into 4% CH4/H2 plasma, as compared to the high quality transparent microcrystalline diamond (MCD) films, grown using the same growth parameters except for nitrogen. These experimental results clearly evidence that defect formation and impurity incorporation (for example, N and H) impeding diamond grain growth is the main formation mechanism of NCD upon nitrogen doping and strongly support the model proposed in the literature that nitrogen competes with CHX (x = 1,2,3) growth species for adsorption sites.

  8. Boron-doped nanodiamonds as possible agents for local hyperthermia

    Science.gov (United States)

    Vervald, A. M.; Burikov, S. A.; Vlasov, I. I.; Ekimov, E. A.; Shenderova, O. A.; Dolenko, T. A.

    2017-04-01

    In this work, the effective heating of surrounding water by heavily-boron-doped nanodiamonds (NDs) under laser irradiation of visible wavelength was found. Using Raman scattering spectroscopy of aqueous suspensions of boron-doped NDs, it was found that this abnormally high heating results in the weakening of hydrogen bonds much more so (2–5 times stronger) than for undoped NDs. The property of boron-doped NDs to heat a solvent under the influence of laser radiation (1–5 W cm‑2) opens broad prospects for their use to create nanoagents for medical oncology and local hyperthermia.

  9. Synthesis and characterization of boron-doped carbon nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Ceragioli, H J; Peterlevitz, A C; Quispe, J C R; Pasquetto, M P; Sampaio, M A; Baranauskas, V [Faculdade de Engenharia Eletrica e Computacao, Departamento de Semicondutores, Instrumentos e Fotonica, Universidade Estadual de Campinas, UNICAMP, Av. Albert Einstein N.400, 13083-852 Campinas SP Brasil (Brazil); Larena, A [Department of Chemical Industrial Engineering and Environment, Universidad Politecnica de Madrid, E.T.S. Ingenieros Industriales, C/ Jose Gutierrez Abascal, Madrid (Spain)], E-mail: vitor.baranauskas@gmail.com

    2008-03-15

    Boron-doped carbon nanotubes have been prepared by chemical vapour deposition of ethyl alcohol doped with B{sub 2}O{sub 3} using a hot-filament system. Multi-wall carbon nanotubes of diameters in the range of 30-100 nm have been observed by field emission scanning electron microscopy (FESEM). Raman measurements indicated that the degree of C-C sp{sup 2} order decreased with boron doping. Lowest threshold fields achieved were 1.0 V/{mu}m and 2.1 V/{mu}m for undoped and boron-doped samples, respectively.

  10. A multilayer innovative solution to improve the adhesion of nanocrystalline diamond coatings

    Energy Technology Data Exchange (ETDEWEB)

    Poulon-Quintin, A., E-mail: poulon@icmcb-bordeaux.cnrs.fr [CNRS, ICMCB, UPR 9048, F-33600 Pessac (France); Univ. Bordeaux, ICMCB, UPR 9048, F-33600 Pessac (France); Faure, C.; Teulé-Gay, L.; Manaud, J.P. [CNRS, ICMCB, UPR 9048, F-33600 Pessac (France); Univ. Bordeaux, ICMCB, UPR 9048, F-33600 Pessac (France)

    2015-03-15

    Highlights: • Improvement of the NCD adhesion on WC-12%Co substrates for tooling applications using a multi-interlayer additional system. • Reduction of the graphite layer thickness and continuity at the interface with the diamond. • Transmission electron microscopy study for a better understanding of the diffusion phenomena occurring at the interfaces. - Abstract: Nano-crystalline diamond (NCD) films grown under negative biased substrates by chemical vapor deposition (CVD) are widely used as surface overlay coating onto cermet WC-Co cutting tools to get better performances. To improve the diamond adhesion to the cermet substrate, suitable multi-layer systems have been added. They are composed of a cobalt diffusion barrier close to the substrate (single and sequenced nitrides layers) coated with a nucleation extra layer to improve the nucleus density of diamond during CVD processing. For all systems, before and after diamond deposition, transmission electron microscopy (TEM) has been performed for a better understanding of the diffusion phenomena occurring at the interfaces and to evaluate the presence of graphitic species at the interface with the diamond. Innovative multilayer system dedicated to the regulation of cobalt diffusion coated with a bilayer system optimized for the carbon diffusion control, is shown as an efficient solution to significantly reduce the graphite layer formation at the interface with the diamond down to 10 nm thick and to increase the adhesion of NCD diamond layer as scratch-tests confirm.

  11. Deposition of polycrystalline and nanocrystalline diamond on graphite: effects of surface pre-treatments

    Science.gov (United States)

    Villalpando, I.; John, P.; Porro, S.; Wilson, J. I. B.

    2017-03-01

    The growth of hydrogenated sp3-phase of diamond on the sp2-phase of graphite by Microwave Plasma Enhanced Chemical Vapour Deposition (MPECVD) is a challenge, primarily because hydrogen etches graphite much faster than the growth rate of diamond. To enhance nucleation of diamond on graphite, we used a plethora of techniques such as plasma etching, ion bombardment, manual scratching, and scratching by ultrasonic agitation. Nanocrystalline and polycrystalline diamond thin-films were grown by MPECVD on the surface of pre-treated or pristine graphite using 1.5, 3.0, and 3.6 kW microwave power. Samples were characterised by Scanning Electron Microscopy, Raman Spectroscopy, and X-ray Photoelectron Spectroscopy. Species in the gas phase during film deposition were monitored by Optical Emission Spectroscopy. We have found that the surface area covered and the morphology of the diamond films are dependent on the surface pre-treatment. The crystallite size of the films depends on the microwave power used during MPECVD growth. The results of this study establish the protocols for diamond deposition by MPECVD on graphite substrates with a desired crystalline quality based on the pre-treatment of the substrate and the microwave power used during MPECVD. These results are important to modern applications, such as plasma facing materials, in which diamond has shown outstanding performance in contrast to that of graphite.

  12. Nanocarbon Allotropes-Graphene and Nanocrystalline Diamond-Promote Cell Proliferation.

    Science.gov (United States)

    Verdanova, Martina; Rezek, Bohuslav; Broz, Antonin; Ukraintsev, Egor; Babchenko, Oleg; Artemenko, Anna; Izak, Tibor; Kromka, Alexander; Kalbac, Martin; Hubalek Kalbacova, Marie

    2016-05-01

    Two profoundly different carbon allotropes - nanocrystalline diamond and graphene - are of considerable interest from the viewpoint of a wide range of biomedical applications including implant coating, drug and gene delivery, cancer therapy, and biosensing. Osteoblast adhesion and proliferation on nanocrystalline diamond and graphene are compared under various conditions such as differences in wettability, topography, and the presence or absence of protein interlayers between cells and the substrate. The materials are characterized in detail by means of scanning electron microscopy, atomic force microscopy, photoelectron spectroscopy, Raman spectroscopy, and contact angle measurements. In vitro experiments have revealed a significantly higher degree of cell proliferation on graphene than on nanocrystalline diamond and a tissue culture polystyrene control material. Proliferation is promoted, in particular, by hydrophobic graphene with a large number of nanoscale wrinkles independent of the presence of a protein interlayer, i.e., substrate fouling is not a problematic issue in this respect. Nanowrinkled hydrophobic graphene, thus, exhibits superior characteristics for those biomedical applications where high cell proliferation is required under differing conditions.

  13. Field electron emission of diamond films on nanocrystalline diamond coating by CVD method

    Institute of Scientific and Technical Information of China (English)

    CAI Rangqi; CHEN Guanghua; SONG Xuemei; XING Guangjian; FENG Zhenjian; HE Deyan

    2003-01-01

    The preparation process, structure feature and field electron emission characteristic of diamond films on nanocyrstalline diamond coating by the CVD method were studied. The field electron emission measurements on the samples showed that the diamond films have lower turn-on voltage and higher field emission current density. A further detailed theory explanation to the results was given.

  14. Enhancement of the nucleation of smooth and dense nanocrystalline diamond films by using molybdenum seed layers

    Science.gov (United States)

    Buijnsters, J. G.; Vázquez, L.; van Dreumel, G. W. G.; ter Meulen, J. J.; van Enckevort, W. J. P.; Celis, J. P.

    2010-11-01

    A method for the nucleation enhancement of nanocrystalline diamond (NCD) films on silicon substrates at low temperature is discussed. A sputter deposition of a Mo seed layer with thickness 50 nm on Si substrates was applied followed by an ultrasonic seeding step with nanosized detonation diamond powders. Hot-filament chemical vapor deposition (HF-CVD) was used to nucleate and grow NCD films on substrates heated up at 550 °C. The nucleation of diamond and the early stages of NCD film formation were investigated at different methane percentages in methane/hydrogen gas mixtures by atomic force microscopy, micro-Raman spectroscopy, scanning electron microscopy, and grazing incidence x-ray analyses in order to gain specific insight in the nucleation process of NCD films. The nucleation kinetics of diamond on the Mo-coated Si substrates was found to be up to ten times higher than on blank Si substrates. The enhancement of the nucleation of diamond on thin Mo interlayers results from two effects, namely, (a) the nanometer rough Mo surface shows an improved embedding of ultrasonically introduced nanosized diamond seeds that act as starting points for the diamond nucleation during HF-CVD and (b) the rapid carbonization of the Mo surface causes the formation of Mo2C onto which diamond easily nucleates. The diamond nucleation density progressively increases at increasing methane percentages and is about 5×1010 cm-2 at 4.0% methane. The improved nucleation kinetics of diamond on Mo interlayers facilitates the rapid formation of NCD films possessing a very low surface roughness down to ˜6 nm, and allows a submicron thickness control.

  15. Thick Nano-Crystalline Diamond films for fusion applications

    Energy Technology Data Exchange (ETDEWEB)

    Dawedeit, Christoph [Technical Univ. of Munich (Germany)

    2010-06-30

    This Diplomarbeit deals with the characterization of 9 differently grown diamond samples. Several techniques were used to determine the quality of these specimens for inertial confinement fusion targets. The quality of chemical vapor deposition diamond is usually considered in terms of the proportion of sp3-bonded carbon to sp2-bonded carbon in the sample. For fusion targets smoothness, Hydrogen content and density of the diamonds are further important characteristics. These characteristics are analyzed in this thesis. The research for thesis was done at Lawrence Livermore National Laboratory in collaboration with the Fraunhofer Institut für angewandte Festkörperphysik Freiburg, Germany. Additionally the Lehrstuhl fuer Nukleartechnik at Technical University of Germany supported the work.

  16. Polydopamine-modified nanocrystalline diamond thin films as a platform for bio-sensing applications

    Energy Technology Data Exchange (ETDEWEB)

    Pop-Georgievski, Ognen, E-mail: georgievski@imc.cas.cz [Institute of Macromolecular Chemistry, Academy of Sciences of the Czech Republic, Heyrovsky sq. 2, 16206 Prague 6 (Czech Republic); Neykova, Neda, E-mail: neykova@fzu.cz [Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnicka 10, 16253 Prague 6 (Czech Republic); Czech Technical University in Prague, Faculty of Nuclear Sciences and Physical Engineering Trojanova 13, 120 00 Prague 2 (Czech Republic); Proks, Vladimir [Institute of Macromolecular Chemistry, Academy of Sciences of the Czech Republic, Heyrovsky sq. 2, 16206 Prague 6 (Czech Republic); Houdkova, Jana; Ukraintsev, Egor; Zemek, Josef; Kromka, Alexander [Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnicka 10, 16253 Prague 6 (Czech Republic); Rypaček, František [Institute of Macromolecular Chemistry, Academy of Sciences of the Czech Republic, Heyrovsky sq. 2, 16206 Prague 6 (Czech Republic)

    2013-09-30

    Diamond exhibits good biocompatibility and a large electrochemical potential window, and thus, it is particularly suitable for bio-functionalization and bio-sensing. Modification of the diamond surface can be achieved through mussel-inspired surface chemistry based on polydopamine (PDA) while maintaining the intrinsic properties of the surface. We present a comparative study on the polymerization/deposition of PDA from an aqueous solution of dopamine on hydrogen- (H) and oxygen- (O) terminated nanocrystalline diamond films (NCD). The dopamine polymerization/deposition was performed under mild conditions, which resulted in a confluent PDA layer. A detailed investigation of the growth kinetics of the PDA film on H- and O-terminated NCD substrates was performed using spectroscopic ellipsometry. The chemical composition, the functional group distribution, the surface topography and the wetting properties of the adherent PDA films were evaluated using X-ray photoelectron spectroscopy, atomic force microscopy and water contact angle goniometry, respectively. According to the results, a PDA layer can be used as a platform for future bio-functionalization and/or optical bio-sensing applications. - Highlights: ► Nanocrystalline diamond (NCD) was modified through polydopamine (PDA) chemistry. ► PDA's growth kinetics on H- and O-terminated NCD films were investigated. ► The growth kinetics and composition of PDA were independent of the NCD termination.

  17. High-Q optomechanical circuits made from polished nanocrystalline diamond thin films

    CERN Document Server

    Ummethala, S; Lewes-Malandrakis, G; Brink, D; Nebel, C; Pernice, W H P

    2014-01-01

    We demonstrate integrated optomechanical circuits with high mechanical quality factors prepared from nanocrystalline diamond thin films. Using chemomechanical polishing, the RMS surface roughness of as grown polycrystalline diamond films is reduced below 3nm to allow for the fabrication of high-quality nanophotonic circuits. By integrating free-standing nanomechanical resonators into integrated optical devices, efficient read-out of the thermomechanical motion of diamond resonators is achieved with on-chip Mach-Zehnder interferometers. Mechanical quality factors up to 28,800 are measured for four-fold clamped optomechanical resonators coupled to the evanescent near-field of nanophotonic waveguides. Our platform holds promise for large-scale integration of optomechanical circuits for on-chip metrology and sensing applications.

  18. The Formation of Nanocrystalline Diamond Coating on WC Deposited by Microwave Assisted Plasma CVD

    Science.gov (United States)

    Toff, M. R. M.; Hamzah, E.; Purniawan, A.

    2010-03-01

    Diamond is one form of carbon structure. The extreme hardness and high chemical resistant of diamond coatings determined that many works on this area relate to coated materials for tribological applications in biomedicine, as mechanical seals or cutting tools for hard machining operations. In the work, nanocrystalline diamond (NCD) coated tungsten carbide (WC) have been deposited by microwave assisted plasma chemical vapor deposition (MAPCVD) from CH4/H2 mixtures. Morphology of NCD was investigated by using Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM). The quality of NCD is defined as ratio between diamond and non diamond and also full width at half maximum (FWHM) was determined using Raman spectra. The result found that the NCD structure can be deposited on WC surface using CH4/H2 gas mixture with grain size ˜20 nm to 100 nm. Increase %CH4 concentration due to increase the nucleation of NCD whereas decrease the quality of diamond. Based on Raman spectra, the quality of NCD is in the range ˜98.82-99.01% and 99.56-99.75% for NCD and microcrystalline (MCD), respectively. In addition, FWHM of NCD is high than MCD in the range of 8.664-62.24 cm-1 and 4.24-5.05 cm-1 for NCD and MCD respectively that indicate the crystallineity of NCD is smaller than MCD.

  19. Preliminary viability studies of fibroblastic cells cultured on microcrystalline and nanocrystalline diamonds produced by chemical vapour deposition method

    Directory of Open Access Journals (Sweden)

    Ana Amélia Rodrigues

    2012-01-01

    Full Text Available Implant materials used in orthopedics surgery have demonstrated some disadvantages, such as metallic corrosion processes, generation of wear particles, inflammation reactions and bone reabsorption in the implant region. The diamond produced through hot-filament chemical vapour deposition method is a new potential biomedical material due to its chemical inertness, extreme hardness and low coefficient of friction. In the present study we analysis two samples: the microcrystalline diamond and the nanocrystalline diamond. The aim of this study was to evaluate the surface properties of the diamond samples by scanning electron microscopy, Raman spectroscopy and atomic force microscopy. Cell viability and morphology were assessed using thiazolyl blue tetrazolium bromide, cytochemical assay and scanning electron microscopy, respectively. The results revealed that the two samples did not interfere in the cell viability, however the proliferation of fibroblasts cells observed was comparatively higher with the nanocrystalline diamond.

  20. Preliminary viability studies of fibroblastic cells cultured on microcrystalline and nanocrystalline diamonds produced by chemical vapour deposition method

    Directory of Open Access Journals (Sweden)

    Ana Amélia Rodrigues

    2013-02-01

    Full Text Available Implant materials used in orthopedics surgery have demonstrated some disadvantages, such as metallic corrosion processes, generation of wear particles, inflammation reactions and bone reabsorption in the implant region. The diamond produced through hot-filament chemical vapour deposition method is a new potential biomedical material due to its chemical inertness, extreme hardness and low coefficient of friction. In the present study we analysis two samples: the microcrystalline diamond and the nanocrystalline diamond. The aim of this study was to evaluate the surface properties of the diamond samples by scanning electron microscopy, Raman spectroscopy and atomic force microscopy. Cell viability and morphology were assessed using thiazolyl blue tetrazolium bromide, cytochemical assay and scanning electron microscopy, respectively. The results revealed that the two samples did not interfere in the cell viability, however the proliferation of fibroblasts cells observed was comparatively higher with the nanocrystalline diamond.

  1. Microwave plasma assisted chemical vapor deposition of ultra-nanocrystalline diamond films

    Science.gov (United States)

    Huang, Wen-Shin

    Microwave plasma assisted ultra-nanocrystalline diamond film deposition was investigated using hydrogen deficient, carbon containing argon plasma chemistries with MSU-developed microwave plasma reactors. Ultra-nanocrystalline diamond film deposition on mechanically scratched silicon wafers was experimentally explored over the following input variables: (1) pressure: 60--240Torr, (2) total gas flow rate: 101--642 sccm, (3) input microwave power 732--1518W, (4) substrate temperature: 500°C--770°C, (5) deposition time: 2--48 hours, and (6) N2 impurities 5--2500 ppm. H2 concentrations were less than 9%, while CH 4 concentration was 0.17--1.85%. It was desired to grow films uniformly over 3″ diameter substrates and to minimize the grain size. Large, uniform, intense, and greenish-white discharges were sustained in contact with three inch silicon substrates over a 60--240 Torr pressure regime. At a given operating pressure, film uniformity was controlled by adjusting substrate holder geometry, substrate position, input microwave power, gas chemistries, and total gas flow rates. Film ultra-nanocrystallinity and smoothness required high purity deposition conditions. Uniform ultra-nanocrystalline films were synthesized in low leak-rate system with crystal sizes ranging from 3--30 nm. Films with 11--50 nm RMS roughness and respective thickness values of 1--23 mum were synthesized over 3″ wafers under a wide range of different deposition conditions. Film RMS roughness 7 nm was synthesized with thickness of 430 nm. Film uniformities of almost 100% were achieved over three inch silicon wafers. UV Raman and XRD characterization results indicated the presence of diamond in the synthesized films. Optical Emission Spectroscopy measurements showed that the discharge gas temperature was in excess of 2000 K. The synthesized films are uniformly smooth and the as grown ultra-nanocrystalline diamond can be used for a high frequency SAW device substrate material. IR measurements

  2. Analysis of Short and Long Range Atomic Order in Nanocrystalline Diamonds with Application of Powder Diffractometry

    Science.gov (United States)

    Palosz, B.; Grzanka, E.; Stelmakh, S.; Pielaszek, R.; Bismayer, U.; Neuefiend, J.; Weber, H.-P.; Proffen, T.; VonDreele, R.; Palosz, W.; Curreri, Peter A. (Technical Monitor)

    2002-01-01

    Fundamental limitations, with respect to nanocrystalline materials, of the traditional elaboration of powder diffraction data like the Rietveld method are discussed. A tentative method of the analysis of powder diffraction patterns of nanocrystals is introduced which is based on the examination of the variation of lattice parameters calculated from individual Bragg lines (named the "apparent lattice parameter", alp). We examine the application of our methodology using theoretical diffraction patterns computed for models of nanocrystals with a perfect crystal lattice and for grains with a two-phase, core-shell structure. We use the method for the analysis of X-ray and neutron experimental diffraction data of nanocrystalline diamond powders of 4, 6 and 12 nm in diameter. The effects of an internal pressure and strain at the grain surface is discussed. This is based on the dependence of the alp values oil the diffraction vector Q and on the PDF analysis. It is shown, that the experimental results support well the concept of the two-phase structure of nanocrystalline diamond.

  3. Phenol degradation by anodic oxidation on boron-doped diamond electrode combining TiO2 Photocatalysis%掺硼金刚石电极结合二氧化钛光催化阳极氧化降解苯酚

    Institute of Scientific and Technical Information of China (English)

    戎非; 顾林娟; 邱烨静; 付德刚; 吴巍

    2010-01-01

    Boron-doped diamond (BDD) electrocatalysis is combined with photocatalysis using titanium dioxide (TiO2) as a catalyst to improve pollutant-oxidation efficiency. Phenol solution is chosen as model wastewater. Different methods involving BDD and/or TiO2 during the degradation processes are compared. Parameters such as the currency density and initial concentration are varied in order to determine their effects on the oxidation process. Moreover, the degradation kinetics of phenol is experimentally studied. The results reveal the superiority of series combination of BDD and TiO2, especially the treatment process of electrocatalysis and succedent photocatalysis, and the optimum working currency density for electrocatalysis is 25.48 mA/cm2. The removal rate decreases with the increase in the initial phenol concentration and the degradation reaction follows quasi-first-order kinetics equation.%采用二氧化钛光催化结合掺硼金刚石电催化来提高污染物氧化效率.以苯酚作为模型废水污染物,分别比较了采用BDD电催化和TiO2光催化以及两者结合方法的降解过程,研究了电流密度和初始浓度等条件对降解效果的影响,并进行了反应动力学讨论.实验结果表明:与单独处理相比, BDD和TiO2组合处理方法拥有较优的苯酚去除效果,尤其是先电解后光催化的方式,其最优工作电流密度为25.48 mA/cm2,并且随着苯酚初始浓度增加,去除率随之下降.动力学研究表明反应符合准一级动力学方程.

  4. 纳米金颗粒在掺硼金刚石薄膜电极表面的自组装及其电化学性能分析∗%Self-assembly of gold nanoparticles onto boron-doped diamond electrode and its electrochemical properties

    Institute of Scientific and Technical Information of China (English)

    崔凯; 汪家道; 冯东; 陈大融

    2015-01-01

    Citrate-coated gold nanoparticles (diameter about 18 nm)were absorbed onto boron-doped diamond (BDD)film electrode through a self-assembly process after the surface of the anodized BDD film was animated. By changing the pH of gold nanoparticles solution,we synthesized gold nanoparticles modified BDD electrode with uniform distribution and high coverage (about 30%) of gold nanoparticles.In the system of [Fe (CN)6 ]3 -/4- ,through AC impedance analysis and cyclic voltammetry analysis,we find that heterogeneous elec-tron transfer rate constant (K app )of gold nanoparticles modified BDD electrode increased from 2.8 × 10 -4 to 8.9×10 -4 .After the BDD electrode was modified with gold nanoparticles,the oxidation potential of dopamine (DA)reduced from 0.54 to 0.3 V,and the oxidation peak was improved,confirming that gold nanoparticles have catalytic effect on DA.%对阳极氧化后的掺硼金刚石(BDD)薄膜进行表面氨基化处理,使柠檬酸根包裹的纳米金颗粒(粒径约18 nm)自组装到 BDD 薄膜的表面.通过改变纳米金溶液的 pH 值,在 BDD 薄膜表面制备出二维形貌分布均匀且相对覆盖度高(约30%)的纳米金颗粒.在[Fe(CN)6]3-/4-体系中,通过循环伏安分析和交流阻抗分析实验发现,纳米金颗粒修饰后的 BDD 电极表面异相电子转移速率常数(K app )由2.8×10-4提高到8.9×10-4.纳米金颗粒修饰的 BDD 电极对多巴胺的氧化电位由0.54 V 减小到0.3 V,且氧化峰峰值得到提高,证实了纳米金颗粒对多巴胺的催化作用.

  5. Deposition of boron doped DLC films on TiNb and characterization of their mechanical properties and blood compatibility

    Science.gov (United States)

    Liza, Shahira; Hieda, Junko; Akasaka, Hiroki; Ohtake, Naoto; Tsutsumi, Yusuke; Nagai, Akiko; Hanawa, Takao

    2017-01-01

    Abstract Diamond-like carbon (DLC) material is used in blood contacting devices as the surface coating material because of the antithrombogenicity behavior which helps to inhibit platelet adhesion and activation. In this study, DLC films were doped with boron during pulsed plasma chemical vapor deposition (CVD) to improve the blood compatibility. The ratio of boron to carbon (B/C) was varied from 0 to 0.4 in the film by adjusting the flow rate of trimethylboron and acetylene. Tribological tests indicated that boron doping with a low B/C ratio of 0.03 is beneficial for reducing friction (μ = 0.1), lowering hardness and slightly increasing wear rate compared to undoped DLC films. The B/C ratio in the film of 0.03 and 0.4 exhibited highly hydrophilic surface owing to their high wettability and high surface energy. An in vitro platelet adhesion experiment was conducted to compare the blood compatibility of TiNb substrates before and after coating with undoped and boron doped DLC. Films with highly hydrophilic surface enhanced the blood compatibility of TiNb, and the best results were obtained for DLC with the B/C ratio of 0.03. Boron doped DLC films are promising surface coatings for blood contacting devices. PMID:28179961

  6. Carbon nanoscrolls on the surface of nanocrystalline graphite and diamond films

    Energy Technology Data Exchange (ETDEWEB)

    Skovorodnikov, N. O., E-mail: ismagil@polly.phys.msu.ru; Malykhin, S. A. [Moscow State University, Faculty of Physics (Russian Federation); Tuyakova, F. T. [Moscow State Technical University of Radio Engineering, Electronics, and Automation (Russian Federation); Ismagilov, R. R.; Obraztsov, A. N. [Moscow State University, Faculty of Physics (Russian Federation)

    2015-07-15

    Nanocrystalline graphite and diamond films with needlelike nanostructures on their surface have been obtained by plasma-enhanced chemical vapor deposition. According to the experimental data, these aggregates have the same nature for films of both types: they are tubular carbon nanoscrolls with a polygonal cross section. Nanoscrolls are formed by a helically folded graphene sheet; they look like twisted prisms. The needlelike prismatic structures have an average diameter in the range of 50‒500 nm, and their length reaches several micrometers. Possible mechanisms of formation of carbon nanostructures are discussed.

  7. Influence of Boron doping on micro crystalline silicon growth

    Institute of Scientific and Technical Information of China (English)

    Li Xin-Li; Wang Guo; Chen Yong-Sheng; Yang Shi-E; Gu Jin-Hua; Lu Jing-Xiao; Gao Xiao-Yong; Li Rui; Jiao Yue-Chao; Gao Hai-Bo

    2011-01-01

    Microcrystalline silicon (Ftc-Si:H) thin films with and without boron doping are deposited using the radio-frequency plasmsrenhanced chemical vapour deposition method. The surface roughness evolutions of the silicon thin films are investigated using ex situ spectroscopic ellipsometry and an atomic force microscope. It is shown that the growth exponent β and the roughness exponent a are about 0.369 and 0.95 for the undoped thin film,respectively. Whereas,for the boron-doped pc-Si:H thin film,βincreases to 0.534 and a decreases to 0.46 due to the shadowing effect.

  8. Superconductivity in CVD Diamond Thin Film Well-Above Liquid Helium Temperature

    OpenAIRE

    Takano, Y.; Nagao, M.; Kobayashi, K; Umezawa, H.; Sakaguchi, I.; Tachiki, M.; Hatano, T.; Kawarada, H.

    2004-01-01

    Diamond has always been adored as a jewel. Even more fascinating is its outstanding physical properties; it is the hardest material known in the world with the highest thermal conductivity. Meanwhile, when we turn to its electrical properties, diamond is a rather featureless electrical insulator. However, with boron doping, it becomes a p-type semiconductor, with boron acting as a charge acceptor. Therefore the recent news of superconductivity in heavily boron-doped diamond synthesized by hig...

  9. Designed protein binders in combination with nanocrystalline diamond for use in high-sensitivity biosensors.

    Science.gov (United States)

    Fromell, Karin; Forsberg, Pontus; Karlsson, Mikael; Larsson, Karin; Nikolajeff, Fredrik; Baltzer, Lars

    2012-10-01

    A platform for diagnostic applications showing signal-to-noise ratios that by far surpass those of traditional bioanalytical test formats has been developed. It combines the properties of modified nanocrystalline diamond (NCD) surfaces and those of polyethylene oxide and polypropylene oxide based block copolymers for surface passivation and binder conjugation with a new class of synthetic binders for proteins. The NCD surfaces were fluorine-, hydrogen-, or oxygen-terminated prior to further biofunctionalization and the surface composition was characterized by X-ray photoelectron spectroscopy. In a proof of principle demonstration targeting the C-reactive protein, an ELISA carried out using an F-terminated diamond surface showed a signal-to-noise ratio of 3,900 which compares well to the signal-to-noise of 89 obtained in an antibody-based ELISA on a polystyrene microtiter plate, a standard test format used in most life science laboratories today. The increase in signal-to-noise ratio is to a large extent the result of extremely efficient passivation of the diamond surface. The results suggest that significant improvements can be obtained in standardized test formats using new materials in combination with new types of chemical coatings and receptor molecules.

  10. BDD 和 PbO2电极电化学氧化苯并三氮唑的对比研究%Comparative Study of Benzotriazole Electrochemical Oxidation at Boron-doped Diamond and PbO2 Anodes

    Institute of Scientific and Technical Information of China (English)

    伍娟丽; 张佳维; 王婷; 倪晋仁

    2015-01-01

    分别构建了以掺硼金刚石膜电极(BDD)和二氧化铅电极(PbO2)为阳极的电化学体系,对比考察了两种电极对难降解有机污染物苯并三氮唑(BTA)的降解及体系的矿化效果,并从电极产生羟基自由基(.OH)的数量与形态角度深入探讨了影响电极矿化能力大小的内在因素.结果表明:①BDD 和 PbO2电极均对 BTA 有较好的降解效果,电解12 h 后 BTA 去除率分别为99.48℅和98.36℅,但 BDD 电极的矿化能力明显强于 PbO2电极,电解12 h 后矿化率分别为87.69℅和35.96℅;②BDD体系阳极.OH产生速率和阴极 H2产生速率均低于 PbO2体系,即表面活性位点数量少于 PbO2电极,因此.OH数量不是决定矿化能力大小的关键;③BDD 电极表面吸附氧活性更强,结合能(532.37eV)大于 PbO2(530.74eV),且表面吸附层更薄,产生的.OH形态更自由,是决定其具有更大矿化能力的关键因素.%Electrochemical systems were built to investigate the degradation of benzotriazole (BTA) on boron-doped diamond (BDD) and PbO2 anodes and give an insight into the mineralization ability of two electrodes in terms of the amount and activity of hydroxyl radicals. Results of bulk electrolysis showed that both BDD and PbO2 displayed perfect BTA degradation performance after 12 hours’ electrolysis, with the removal percentages of 99. 48℅ and 98. 36℅ , respectively, while the mineralization ability of BDD was much stronger than that of PbO2 , with the efficiency of 87. 69℅ for BDD and 35. 96℅ for PbO2 . Less hydroxyl radical and hydrogen production in BDD system suggested the less amount of active sites on BDD surface, thus further verified that the generated hydroxyl radical amount was not the primary factor determining the mineralization ability of anodes. However, BDD displayed larger binding energy of adsorbed oxygen and thinner adsorption layer than those of PbO2 , indicating that the BDD electrode surface was of greater catalytic

  11. Graphite to ultrafine nanocrystalline diamond phase transition model and growth restriction mechanism induced by nanosecond laser processing

    Energy Technology Data Exchange (ETDEWEB)

    Ren, X. D., E-mail: renxd@mail.ujs.edu.cn; Liu, R.; Zheng, L. M.; Ren, Y. P.; Hu, Z. Z.; He, H. [Department of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China)

    2015-10-05

    To have a clear insight into nanocrystal growth from graphite to diamond upon high energy pulsed laser irradiation of graphite suspension, synthesis of ultrafine nanocrystalline diamonds with laser energy set up from 0.3 J to 12 J, repetition rate of 10 Hz has been studied. The method allows synthesizing ultrafine nanocrystalline particles continuously at the ambient temperature and normal pressure. The particle size is shown independent of laser energy, which is ultrafine and ranges in 2–6 nm. The theoretical grown size of nano-diamonds is found in well agreement with the experiment results. Four kinds of production were found: nano-diamond, spherical carbon nano-particles, flocculent amorphous carbon, and graphene nano-ribbon rolls. A solid-vapor-plasma-liquid coexistence model describing phase transition from graphite to diamond induced by nanosecond laser processing was proposed. Graphene nano-ribbon rolls might be the intermediate phase in the conversion from graphite to diamond.

  12. Electron spectra line shape analysis of highly oriented pyrolytic graphite and nanocrystalline diamond.

    Science.gov (United States)

    Lesiak, Beata; Zemek, Josef; Houdkova, Jana; Kromka, Alexander; Józwik, Adam

    2010-01-01

    The X-ray excited Auger electron spectroscopy (XAES), X-ray photoelectron spectroscopy (XPS) and elastic peak electron spectroscopy (EPES) methods were applied in investigating samples of nanocrystalline diamond and highly oriented pyrolytic graphite of various C sp(2)/sp(3) ratios, crystallinity conditions and grain sizes. The composition at the surface was estimated from the XPS. The C sp(2)/sp(3) ratio was evaluated from the width of the XAES first derivative C KLL spectra and from fitting of XPS C 1s spectra into components. The pattern recognition (PR) method applied for analyzing the spectra line shapes exhibited high accuracy in distinguishing different carbon materials. The PR method was found to be a potentially useful approach for identification, especially important for technological applications in fields of materials engineering and for controlling the chemical reaction products during synthesis.

  13. Superconductivity and low temperature electrical transport in B-doped CVD nanocrystalline diamond

    Directory of Open Access Journals (Sweden)

    Milos Nesladek, Jiri J. Mares, Dominique Tromson, Christine Mer, Philippe Bergonzo, Pavel Hubik and Jozef Kristofik

    2006-01-01

    Full Text Available In this work, we report on superconductivity (SC found in thin B-doped nanocrystalline diamond films, prepared by the PE-CVD technique. The thickness of the films varies from about 100 to 400 nm, the films are grown on low-alkaline glass at substrate temperatures of about 500–700 °C. The SIMS measurements show that films can be heavily doped with boron in concentrations in the range of 3×1021 cm−3. The Raman spectra show Fano resonances, confirming the substitutional B-incorporation. The low temperature magnetotransport measurements reveal a positive magnetoresistance. The SC transition is observed at about Tc=1.66 K. A simple theory exploiting the concept of weak localization accounting for this transition is proposed.

  14. Nanocrystalline diamond surfaces for adhesion and growth of primary neurons, conflicting results and rational explanation

    Directory of Open Access Journals (Sweden)

    Silviya Mikhailovna Ojovan

    2014-06-01

    Full Text Available Using a variety of proliferating cell types, it was shown that the surface of nanocrystalline-diamond (NCD provides a permissive substrate for cell adhesion and development without the need of complex chemical functionalization prior to cell seeding. In an extensive series of experiments we found that, unlike proliferating cells, post-mitotic primary neurons do not adhere to bare NCD surfaces when cultured in defined medium. These observations raise questions on the potential use of bare NCD as an interfacing layer for neuronal devices. Nevertheless, we also found that classical chemical functionalization methods render the hostile bare NCD surfaces with adhesive properties that match those of classically functionalized substrates used extensively in biomedical research and applications. Based on the results, we propose a mechanism that accounts for the conflicting results; which on one hand claim that un-functionalized NCD provides a permissive substrate for cell adhesion and growth, while other reports demonstrate the opposite.

  15. Nanocrystalline diamond surfaces for adhesion and growth of primary neurons, conflicting results and rational explanation

    Science.gov (United States)

    Ojovan, Silviya M.; McDonald, Mathew; Rabieh, Noha; Shmuel, Nava; Erez, Hadas; Nesladek, Milos; Spira, Micha E.

    2014-01-01

    Using a variety of proliferating cell types, it was shown that the surface of nanocrystalline diamond (NCD) provides a permissive substrate for cell adhesion and development without the need of complex chemical functionalization prior to cell seeding. In an extensive series of experiments we found that, unlike proliferating cells, post-mitotic primary neurons do not adhere to bare NCD surfaces when cultured in defined medium. These observations raise questions on the potential use of bare NCD as an interfacing layer for neuronal devices. Nevertheless, we also found that classical chemical functionalization methods render the “hostile” bare NCD surfaces with adhesive properties that match those of classically functionalized substrates used extensively in biomedical research and applications. Based on the results, we propose a mechanism that accounts for the conflicting results; which on one hand claim that un-functionalized NCD provides a permissive substrate for cell adhesion and growth, while other reports demonstrate the opposite. PMID:24966832

  16. Nanocrystalline diamond sensor targeted for selective CRP detection: an ATR-FTIR spectroscopy study.

    Science.gov (United States)

    Andersson, Per Ola; Viberg, Pernilla; Forsberg, Pontus; Nikolajeff, Fredrik; Österlund, Lars; Karlsson, Mikael

    2016-05-01

    Protein immobilization on functionalized fluorine-terminated nanocrystalline (NCD) films was studied by attenuated total reflection Fourier transform infrared (ATR-FTIR) spectroscopy using an immobilization protocol developed to specifically bind C-reactive protein (CRP). Using an ATR-FTIR spectroscopy method employing a force-controlled anvil-type configuration, three critical steps of the ex situ CRP immobilization were analyzed. First, the NCD surface was passivated by deposition of a copolymer layer consisting of polyethylene oxide and polypropylene oxide. Second, a synthetic modified polypeptide binder with high affinity to CRP was covalently attached to the polymeric film. Third, CRP dissolved in aqueous buffer in concentrations of 10-20 μg/mL was added on the functionalized NCD surface. Both the amide I and II bands, due to the polypeptide binder and CRP, were clearly observed in ATR-FTIR spectra. CRP amide I bands were extracted from difference spectra and yielded bands that agreed well with the reported amide I band of free (non-bonded) CRP in solution. Thus, our results show that CRP retains its secondary structure when it is attached to the polypeptide binders. Compared to previous IR studies of CRP in solution, about 200 times lower concentration was applied in the present study. Graphical Abstract Direct non-destructive ATR-FTIR analysis of C-reactive protein (CRP) selectively bound to functionalized nanocrystalline diamond (NCD) sensor surface.

  17. Smoothness improvement of micrometer- and submicrometer-thick nanocrystalline diamond films produced by MWPECVD

    Science.gov (United States)

    Cicala, G.; Magaletti, V.; Senesi, G. S.; Tamborra, M.

    2013-04-01

    Thick (around 3 μm) and thin (48-310 nm) nanocrystalline diamond (NCD) films have been produced from Ar-rich CH4/Ar/H2 (1/89/10 %) and H2-rich CH4/H2 (1/99 %) microwave plasmas, respectively. The deposition rate and the nucleation enhancement have been monitored in situ and in real time by pyrometric and laser reflectance interferometry for micrometer- and nanometer-thick films. For thick films, an improvement of the NCD films' smoothness has been obtained by a buffer layer between the films and the treated Si substrate. For thin films, a combinatorial approach, i.e., a treatment of the Si substrate in a suspension of mixed diamond powders of 250 nm and 40-60 μm, has been utilized. The present experimental results show that the buffer layer procedure allows good preservation of the surface of the treated Si substrate and the combinatorial approach promotes effectively the seeding of the Si surface.

  18. Development of High-Performance UV Detector Using Nanocrystalline Diamond Thin Film

    Directory of Open Access Journals (Sweden)

    C. R. Lin

    2014-01-01

    Full Text Available Nanocrystalline diamond (NCD films are promising materials for wide-spread applications due to their outstanding characteristics of chemical, physical, and highly smooth surface. Our present work aimed at the fabrication of high performance diamond-based UV detector. NCD films were prepared by microwave plasma enhanced chemical vapor deposition process, and then Au interdigital electrodes were deposited onto the surface of the as-grown NCD film by sputtering technique. Annealing procedures were conducted at various temperatures to obtain Ohmic contact of NCD/Au structure. The surface morphology, microstructure, and wettablity of the NCD films were analyzed by scanning electron microscopy, atomic forced microscopy, Raman spectroscopy, X-ray photoelectron spectroscopy, transmission electron microscopy, and water contact angle measurement, respectively. The electrical property and photoconductivity of the fabricated devices were tested for UV detection application. It was found that the NCD films possessed high sp3 fraction of 68.6%, low surface roughness of 9.6 nm, and good hydrophobicity, as deposited under working pressure of 40 Torr. Also, the NCD/Au structure annealed at 500°C exhibited a good Ohmic contact characteristic, high detection efficiency, and fast response to UV irradiation in air ambient. The proposed study indeed demonstrates prospective applications of NCD films in UV detector, photocatalyst, solar cell, and so on.

  19. Osteogenic cell differentiation on H-terminated and O-terminated nanocrystalline diamond films

    Directory of Open Access Journals (Sweden)

    Liskova J

    2015-01-01

    Full Text Available Jana Liskova,1 Oleg Babchenko,2 Marian Varga,2 Alexander Kromka,2 Daniel Hadraba,1 Zdenek Svindrych,1 Zuzana Burdikova,1 Lucie Bacakova1 1Institute of Physiology, Academy of Sciences of the Czech Republic, Prague, Czech Republic; 2Institute of Physics, Academy of Sciences of the Czech Republic, Prague, Czech Republic Abstract: Nanocrystalline diamond (NCD films are promising materials for bone implant coatings because of their biocompatibility, chemical resistance, and mechanical hardness. Moreover, NCD wettability can be tailored by grafting specific atoms. The NCD films used in this study were grown on silicon substrates by microwave plasma-enhanced chemical vapor deposition and grafted by hydrogen atoms (H-termination or oxygen atoms (O-termination. Human osteoblast-like Saos-2 cells were used for biological studies on H-terminated and O-terminated NCD films. The adhesion, growth, and subsequent differentiation of the osteoblasts on NCD films were examined, and the extracellular matrix production and composition were quantified. The osteoblasts that had been cultivated on the O-terminated NCD films exhibited a higher growth rate than those grown on the H-terminated NCD films. The mature collagen fibers were detected in Saos-2 cells on both the H-terminated and O-terminated NCD films; however, the quantity of total collagen in the extracellular matrix was higher on the O-terminated NCD films, as were the amounts of calcium deposition and alkaline phosphatase activity. Nevertheless, the expression of genes for osteogenic markers – type I collagen, alkaline phosphatase, and osteocalcin – was either comparable on the H-terminated and O-terminated films or even lower on the O-terminated films. In conclusion, the higher wettability of the O-terminated NCD films is promising for adhesion and growth of osteoblasts. In addition, the O-terminated surface also seems to support the deposition of extracellular matrix proteins and extracellular matrix

  20. Enhanced optoelectronic performances of vertically aligned hexagonal boron nitride nanowalls-nanocrystalline diamond heterostructures

    Science.gov (United States)

    Sankaran, Kamatchi Jothiramalingam; Hoang, Duc Quang; Kunuku, Srinivasu; Korneychuk, Svetlana; Turner, Stuart; Pobedinskas, Paulius; Drijkoningen, Sien; van Bael, Marlies K.; D' Haen, Jan; Verbeeck, Johan; Leou, Keh-Chyang; Lin, I.-Nan; Haenen, Ken

    2016-07-01

    Field electron emission (FEE) properties of vertically aligned hexagonal boron nitride nanowalls (hBNNWs) grown on Si have been markedly enhanced through the use of nitrogen doped nanocrystalline diamond (nNCD) films as an interlayer. The FEE properties of hBNNWs-nNCD heterostructures show a low turn-on field of 15.2 V/μm, a high FEE current density of 1.48 mA/cm2 and life-time up to a period of 248 min. These values are far superior to those for hBNNWs grown on Si substrates without the nNCD interlayer, which have a turn-on field of 46.6 V/μm with 0.21 mA/cm2 FEE current density and life-time of 27 min. Cross-sectional TEM investigation reveals that the utilization of the diamond interlayer circumvented the formation of amorphous boron nitride prior to the growth of hexagonal boron nitride. Moreover, incorporation of carbon in hBNNWs improves the conductivity of hBNNWs. Such a unique combination of materials results in efficient electron transport crossing nNCD-to-hBNNWs interface and inside the hBNNWs that results in enhanced field emission of electrons. The prospective application of these materials is manifested by plasma illumination measurements with lower threshold voltage (370 V) and longer life-time, authorizing the role of hBNNWs-nNCD heterostructures in the enhancement of electron emission.

  1. Enhanced optoelectronic performances of vertically aligned hexagonal boron nitride nanowalls-nanocrystalline diamond heterostructures.

    Science.gov (United States)

    Sankaran, Kamatchi Jothiramalingam; Hoang, Duc Quang; Kunuku, Srinivasu; Korneychuk, Svetlana; Turner, Stuart; Pobedinskas, Paulius; Drijkoningen, Sien; Van Bael, Marlies K; D' Haen, Jan; Verbeeck, Johan; Leou, Keh-Chyang; Lin, I-Nan; Haenen, Ken

    2016-07-11

    Field electron emission (FEE) properties of vertically aligned hexagonal boron nitride nanowalls (hBNNWs) grown on Si have been markedly enhanced through the use of nitrogen doped nanocrystalline diamond (nNCD) films as an interlayer. The FEE properties of hBNNWs-nNCD heterostructures show a low turn-on field of 15.2 V/μm, a high FEE current density of 1.48 mA/cm(2) and life-time up to a period of 248 min. These values are far superior to those for hBNNWs grown on Si substrates without the nNCD interlayer, which have a turn-on field of 46.6 V/μm with 0.21 mA/cm(2) FEE current density and life-time of 27 min. Cross-sectional TEM investigation reveals that the utilization of the diamond interlayer circumvented the formation of amorphous boron nitride prior to the growth of hexagonal boron nitride. Moreover, incorporation of carbon in hBNNWs improves the conductivity of hBNNWs. Such a unique combination of materials results in efficient electron transport crossing nNCD-to-hBNNWs interface and inside the hBNNWs that results in enhanced field emission of electrons. The prospective application of these materials is manifested by plasma illumination measurements with lower threshold voltage (370 V) and longer life-time, authorizing the role of hBNNWs-nNCD heterostructures in the enhancement of electron emission.

  2. Dependence of transport properties in tunnel junction on boron doping

    Energy Technology Data Exchange (ETDEWEB)

    Shi, M.J.; Zeng, X.B.; Liu, S.Y.; Peng, W.B; Xiao, H.B; Liao, X.B.; Wang, Z.G.; Kong, G.L. [Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

    2010-04-15

    Boron-doped hydrogenated silicon films with different gaseous doping ratio (B{sub 2}H{sub 6}/SiH{sub 4}) were fabricated as recombination p layers in tunnel junctions. The measurements of I-V characteristics of the junctions and transparency spectra of p layer indicated that the best gaseous doping ratio of the recombination layer is 0.04, which is correlated to the degradation of short range order (SRO) in the inserted p thin film. The junction with such recombination layer has small resistance, near ohmic contact. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  3. The High performance of nanocrystalline CVD diamond coated hip joints in wear simulator test.

    Science.gov (United States)

    Maru, M M; Amaral, M; Rodrigues, S P; Santos, R; Gouvea, C P; Archanjo, B S; Trommer, R M; Oliveira, F J; Silva, R F; Achete, C A

    2015-09-01

    The superior biotribological performance of nanocrystalline diamond (NCD) coatings grown by a chemical vapor deposition (CVD) method was already shown to demonstrate high wear resistance in ball on plate experiments under physiological liquid lubrication. However, tests with a close-to-real approach were missing and this constitutes the aim of the present work. Hip joint wear simulator tests were performed with cups and heads made of silicon nitride coated with NCD of ~10 μm in thickness. Five million testing cycles (Mc) were run, which represent nearly five years of hip joint implant activity in a patient. For the wear analysis, gravimetry, profilometry, scanning electron microscopy and Raman spectroscopy techniques were used. After 0.5 Mc of wear test, truncation of the protruded regions of the NCD film happened as a result of a fine-scale abrasive wear mechanism, evolving to extensive plateau regions and highly polished surface condition (Ra<10nm). Such surface modification took place without any catastrophic features as cracking, grain pullouts or delamination of the coatings. A steady state volumetric wear rate of 0.02 mm(3)/Mc, equivalent to a linear wear of 0.27 μm/Mc favorably compares with the best performance reported in the literature for the fourth generation alumina ceramic (0.05 mm(3)/Mc). Also, squeaking, quite common phenomenon in hard-on-hard systems, was absent in the present all-NCD system.

  4. Synthesis and field emission properties of ultra-nanocrystalline diamond fibers and helices.

    Science.gov (United States)

    Singh, M K; Titus, E; Willinger, M G; Grácio, J

    2010-04-01

    We propose a novel template method for large scale synthesis of Ultra-Nanocrystalline Diamond (UNCD) fibres and helices with lengths of thousands of microns and diameters ranging from 0.5 to 5 microm: (i) Large quantities of submicrometer- or nanometer-diameter silica (a-SiO2) nanostructures, with lengths in the order of 2 to 4 mm, were synthesized by Vapor-Liquid-Solid (VLS) method; (ii) UNCD coating of as-synthesized a-SiO2 micro- or nanonanostructures by Microwave Plasma Chemical Vapour Deposition (MPCVD) technique in hydrogen-deficient condition. Electron Field Emission (EFE) of as-synthesized UNCD structures was observed with a threshold field of 3.4 V/microm. These micro- or nanostructures may find potential applications in high power electronics, vertical field-effect transistors in vacuum electronics, heat sinks in microelectronics and structural materials in Micro- and Nano-Electro-Mechanical Systems (MEMS/NEMS). The successful preparation of various types of UNCD structures suggests that this templating process can be used for a wide range of materials.

  5. Microarray of neuroblastoma cells on the selectively functionalized nanocrystalline diamond thin film surface

    Science.gov (United States)

    Park, Young-Sang; Son, Hyeong-Guk; Kim, Dae-Hoon; Oh, Hong-Gi; Lee, Da-Som; Kim, Min-Hye; Lim, Ki-Moo; Song, Kwang-Soup

    2016-01-01

    Nanocrystalline diamond (NCD) film surfaces were modified with fluorine or oxygen by plasma treatment in an O2 or C3F8 gas environment in order to induce wettability. The oxygenated-NCD (O-NCD) film surface was hydrophilic and the fluorinated-NCD (F-NCD) surface was hydrophobic. The efficiency of early cell adhesion, which is dependent on the wettability of the cell culture plate and necessary for the growth and proliferation of cells, was 89.62 ± 3.92% on the O-NCD film and 7.78 ± 0.77% on the F-NCD film surface after 3 h of cell culture. The wettability of the NCD film surface was artificially modified using a metal mask and plasma treatment to fabricate a micro-pattern. Four types of micro-patterns were fabricated (line, circle, mesh, and word) on the NCD film surface. We precisely arrayed the neuroblastoma cells on the micro-patterned NCD film surfaces by controlling the surface wettability and cell seeding density. The neuroblastoma cells adhered and proliferated along the O-NCD film surface.

  6. Effects of nanotopography on the in vitro hemocompatibility of nanocrystalline diamond coatings.

    Science.gov (United States)

    Skoog, Shelby A; Lu, Qijin; Malinauskas, Richard A; Sumant, Anirudha V; Zheng, Jiwen; Goering, Peter L; Narayan, Roger J; Casey, Brendan J

    2017-01-01

    Nanocrystalline diamond (NCD) coatings have been investigated for improved wear resistance and enhanced hemocompatibility of cardiovascular devices. The goal of this study was to evaluate the effects of NCD surface nanotopography on in vitro hemocompatibility. NCD coatings with small (NCD-S) and large (NCD-L) grain sizes were deposited using microwave plasma chemical vapor deposition and characterized using scanning electron microscopy, atomic force microscopy, contact angle testing, and Raman spectroscopy. NCD-S coatings exhibited average grain sizes of 50-80 nm (RMS 5.8 nm), while NCD-L coatings exhibited average grain sizes of 200-280 nm (RMS 23.1 nm). In vitro hemocompatibility testing using human blood included protein adsorption, hemolysis, nonactivated partial thromboplastin time, platelet adhesion, and platelet activation. Both NCD coatings demonstrated low protein adsorption, a nonhemolytic response, and minimal activation of the plasma coagulation cascade. Furthermore, the NCD coatings exhibited low thrombogenicity with minimal platelet adhesion and aggregation, and similar morphological changes to surface-bound platelets (i.e., activation) in comparison to the HDPE negative control material. For all assays, there were no significant differences in the blood-material interactions of NCD-S versus NCD-L. The two tested NCD coatings, regardless of nanotopography, had similar hemocompatibility profiles compared to the negative control material (HDPE) and should be further evaluated for use in blood-contacting medical devices. © 2016 Wiley Periodicals, Inc. J Biomed Mater Res Part A: 105A: 253-264, 2017.

  7. Enhancing the plasma illumination behaviour of microplasma devices using microcrystalline/ultra-nanocrystalline hybrid diamond materials as cathodes.

    Science.gov (United States)

    Chang, Tinghsun; Lou, Shiucheng; Chen, Huangchin; Chen, Chulung; Lee, Chiyoung; Tai, Nyanhwa; Lin, Inan

    2013-08-21

    The properties of capacity-type microplasma devices were significantly enhanced due to the utilisation of hybrid diamond films as cathodes. The performance of the microplasma devices was closely correlated with the electron field emission (EFE) properties of the diamond cathode materials. The nanoemitters, which were prepared by growing duplex-structured diamond films [microcrystalline diamond (MCD)/ultra-nanocrystalline diamond (UNCD)] on Si-pyramid templates via a two-step microwave plasma enhanced chemical vapour deposition (MPE-CVD) process, exhibited improved EFE properties (E0 = 5.99 V μm(-1), J(e) = 1.10 mA cm(-2) at 8.50 V μm(-1) applied field), resulting in superior microplasma device performance (with a lower threshold field of 200 V mm(-1) and a higher plasma current density of 7.80 mA cm(-2)) in comparison with UNCD film devices prepared using a single-step MPE-CVD process. The superior EFE properties of the duplex-structured MCD-UNCD films relative to those of the UNCD films can be attributed to the unique granular structure of the diamond films. High-resolution transmission electron microscopy reveals that the MCD-UNCD films consisted of abundant graphitic phases located at the periphery of large diamond aggregates and at the boundaries between the ultra-small diamond grains. The presence of the graphite phase is presumed to be the prime factor that renders these films more conductive and causes these films to exhibit higher EFE properties, thus resulting in the improved plasma illumination properties of the microplasma devices.

  8. Comprehensive Evaluation of the Properties of Nanocrystalline Diamond Coatings Grown Using CVD with E/H Field Glow Discharge Stabilization

    Directory of Open Access Journals (Sweden)

    Iu. Nasieka

    2015-01-01

    Full Text Available The nanocrystalline diamond films (coatings were prepared using the plasma enhanced chemical vapor deposition (PECVD technique. In this method, direct current (DC glow discharge in the crossed E/H fields was used to activate the gas phase. The diamond coatings were deposited from the working gas mixture CH4/H2 with addition of nitrogen in various concentrations. It was ascertained that addition of N2 to the working gas mixture leads to reduction in the sizes of diamond grains as well as to the substantial decrease in the resistivity of the studied films. The electrophysical data are in good agreement with the changes induced by varying the N2 content in the Raman scattering spectra. The increase in the N2 concentration causes significant lowering of the crystalline diamond related peak and increase in the intensity of the peaks related to the sp2-bonded carbon. These changes in the spectra indicate significant disordering of the structure of prepared films and its uniformity in the nanodiamond film volume. With the great possibility, it is associated with a decrease in the sizes of diamond crystalline grains and tendency of NCD film to amorphization.

  9. Inclusions of nanocrystalline hydrous aluminium silicate “Phase Egg” in superdeep diamonds from Juina (Mato Grosso State, Brazil)

    Science.gov (United States)

    Wirth, Richard; Vollmer, Christian; Brenker, Frank; Matsyuk, Stanislav; Kaminsky, Felix

    2007-07-01

    Inclusions in alluvial diamond from Juina (Mato Grosso, Brazil) have been investigated by TEM methods (electron diffraction, HRTEM, AEM, HAADF, EELS) and Raman spectroscopy. The inclusion paragenesis of Juina diamonds is dominated by ultrahigh-pressure ("superdeep") phases. One of these diamonds, sample #1.1/4, contains several micrometer-sized (approximately 200 μm by 50-70 μm) inclusions, which have been studied. TEM foils prepared applying Focused Ion Beam (FIB) technique revealed that these inclusions consist of a porous, nanocrystalline groundmass, which is composed of nanometre-sized crystals of a hydrous aluminium silicate phase with Al:Si approximately 1:1 and chemical composition of phase "Egg" (AlSiO 3(OH)), a minor volume fraction of nanocrystalline stishovite and pore space, which was originally filled with a fluid or gas. The nanocrystalline hydrous aluminium silicate phase is idiomorphic, randomly oriented (approximately 20-30 nm in size) predominantly with tetragonal crystal structure ( a0 = 0.743 nm, c0 = 0.706 nm). The monoclinic structure of synthetic phase "Egg" determined at ambient conditions [M.W. Schmidt, L.W. Finger, R.J. Ross, R.E. Dinnebier, Synthesis, crystal structure, and phase relations of AlSiO 3OH, a high-pressure hydrous phase, American Mineralogist 83 (1998) 881 - 888] is only occasionally observed. The fluid filling in the porosity has been released into the vacuum of the FIB during TEM specimen preparation. Quench products of the fluid containing minor concentrations of F- P- S- Cl- K- Ca and Ba were detected at the walls of the pores. In addition phase "Egg" is identified by μ-Raman spectroscopy within a second sample (RS 43a) from the same location. The presence of Phase "Egg" in the inclusions in diamond may suggest that crustal material has been subducted to a depth of the lower Transition Zone. Although, metastable growth of nanocrystalline high-pressure phases or extension of their respective stability fields to lower

  10. Photoluminescence Characterization of Boron-doped Si Layers Grown by Molecular Beam Epitaxy

    Institute of Scientific and Technical Information of China (English)

    LI Cheng; LAI Hong-kai; CHEN Song-yan

    2005-01-01

    Photoluminescence spectra were used to characterize the boron-doped Si layers grown by molecular beam epitaxy using HBO2 as the doping source. The influence of boron doping concentration on the dislocation-related photoluminescence spectra of molecular beam epitaxy Si layers annealed at 900 ℃ was studied with different doping concentrations and growth temperature. The broad photoluminescence band(from 0.75 eV to 0.90 eV) including D1 and D2 bands was associated with high boron doping concentration in the samples, while D3 and D4 bands might be related to oxygen precipitates.

  11. High temperature surface Brillouin scattering study of mechanical properties of boron-doped epitaxial polysilicon

    Directory of Open Access Journals (Sweden)

    B. A. Mathe

    2017-02-01

    Full Text Available A study of the mechanical properties of a boron-doped epitaxial polysilicon layer deposited on a Si (100 substrate specimen has been carried out by surface Brillouin scattering at high temperatures. This type of specimen is widely used in micro-electro-mechanical systems (MEMS. By accumulating spectra with the Rayleigh mode and the Lamb continuum the isotropic elastic constants C44 and C11 were obtained, from which the values of the bulk, shear and Young’s moduli and Poisson’s ratio for the layer were determined over a range of temperatures from 20 °C to 110 °C. By contrast, an examination of the literature on polycrystalline silicon shows that other methods each provide a limited range of the above properties and thus additional experiments and techniques were needed. The SBS method is applicable to other polycrystalline materials such as silicon carbide, silicon nitride, silicon germanium and amorphous diamond that have also been used for MEMS applications.

  12. Influence of microwave plasma parameters on light emission from SiV color centers in nanocrystalline diamond films

    Directory of Open Access Journals (Sweden)

    Himics László

    2014-11-01

    Full Text Available Zero phonon line (ZPL shape, position and integral intensity of SiV defect center in diamond is presented for nanocrystalline diamond (NCD films grown at different conditions, NCD films of average grain sizes from ~50 nm up to ~180 nm have been deposited onto c-Si wafer at substrate temperature of 700 and 850oC from mixture with different CH4 and H2 ratios using MWCVD process. Light emission of SiV defect center and Raman scattering properties of NCD samples were measured on a Renishaw micro-Raman spectrometer with 488 nm excitation. Scanning electron microscopy images were used for monitoring surface morphology and for the analysis of the average grain sizes. Sample thickness was determined by in situ laser reflection interferometry. Characteristics of SiV ZPL are discussed in light of the morphology, bonding structure and average grain size of NCD films.

  13. Enhanced diffusion of oxygen depending on Fermi level position in heavily boron-doped silicon

    Energy Technology Data Exchange (ETDEWEB)

    Torigoe, Kazuhisa, E-mail: ktorigoe@sumcosi.com; Fujise, Jun; Ono, Toshiaki [Technology Division, Advanced Evaluation and Technology Development Department, SUMCO Corporation, 1-52 Kubara, Yamashiro-cho, Imari, Saga 849-4256 (Japan); Nakamura, Kozo [Department of Communication Engineering, Okayama Prefectural University, 111 Kuboki, Soja, Okayama 719-1197 (Japan)

    2014-11-21

    The enhanced diffusivity of oxygen in heavily boron doped silicon was obtained by analyzing oxygen out-diffusion profile changes found at the interface between a lightly boron-doped silicon epitaxial layer and a heavily boron-doped silicon substrate by secondary ion mass spectrometry. It was found that the diffusivity is proportional to the square root of boron concentration in the range of 10{sup 18 }cm{sup −3}–10{sup 19 }cm{sup −3} at temperatures from 750 °C to 950 °C. The model based on the diffusion of oxygen dimers in double positive charge state could explain the enhanced diffusion. We have concluded that oxygen diffusion enhanced in heavily boron-doped silicon is attributed to oxygen dimers ionized depending on Fermi level position.

  14. High-concentration boron doping of graphene nanoplatelets by simple thermal annealing and their supercapacitive properties

    OpenAIRE

    Da-Young Yeom; Woojin Jeon; Nguyen Dien Kha Tu; So Young Yeo; Sang-Soo Lee; Bong June Sung; Hyejung Chang; Jung Ah Lim; Heesuk Kim

    2015-01-01

    For the utilization of graphene in various energy storage and conversion applications, it must be synthesized in bulk with reliable and controllable electrical properties. Although nitrogen-doped graphene shows a high doping efficiency, its electrical properties can be easily affected by oxygen and water impurities from the environment. We here report that boron-doped graphene nanoplatelets with desirable electrical properties can be prepared by the simultaneous reduction and boron-doping of ...

  15. Determination of elastic and thermal properties of a thin nanocrystalline diamond coating using all-optical methods

    Energy Technology Data Exchange (ETDEWEB)

    Sermeus, J.; Verstraeten, B.; Salenbien, R. [KU Leuven-University of Leuven, Soft Matter and Biophysics, Celestijnenlaan 200D, B-3001 Heverlee (Belgium); Pobedinskas, P.; Haenen, K. [Instituut voor Materiaalonderzoek (IMO), Hasselt University, Wetenschapspark 1, 3590 Diepenbeek (Belgium); IMOMEC, IMEC vzw, Wetenschapspark 1, 3590 Diepenbeek (Belgium); Glorieux, C., E-mail: christ.glorieux@fys.kuleuven.be [KU Leuven-University of Leuven, Soft Matter and Biophysics, Celestijnenlaan 200D, B-3001 Heverlee (Belgium)

    2015-09-01

    Results are presented on the thermal and elastic properties of a thin, 1.5 μm, nanocrystalline diamond coating (NCD), deposited on a silicon substrate by microwave plasma enhanced chemical vapor deposition. A combination of two all-optical measurement techniques, impulsive stimulated thermal scattering and grating induced laser beam deflection, was employed to launch and detect surface acoustic waves (SAWs). The relation between the dispersive propagation velocity of SAWs to the coating-substrate geometry is exploited to determine the elastic properties of the NCD coating. The elastic properties are found to be consistent with literature values. The thermal properties of the coating were determined by monitoring the thermal diffusion induced washing away of the laser induced transient surface temperature grating. The transient thermal grating signals were fitted by the low-frequency limit of a thermoelastic model for a multilayer configuration. Similar to the dispersion of the surface acoustic wave velocity, the characteristic time of the thermal diffusion driven grating decay evolves from a coating-dominated value at short grating spacings towards a substrate-dominated value at grating spacings well exceeding the coating thickness. The grating spacing dependence of the corresponding effective thermal diffusivity was experimentally determined and fitted, leading to a value for the thermal diffusivity of the NCD coating α{sub NCD} = 8.4{sub −0.1}{sup +2.7} mm{sup 2}·s{sup −1}, which is an order of magnitude lower than that of the silicon substrate. The low value of the thermal diffusivity is interpreted with a simple touching model. - Highlights: • We investigate a thin nano-crystalline diamond coating. • We used two all optical surface acoustic wave based methods. • We found a young's modulus and density that is in line with literature. • The thermal diffusivity of the NCD coating was 2 orders of magnitude lower than the one of bulk diamond.

  16. Superconductivity in CVD diamond films.

    Science.gov (United States)

    Takano, Yoshihiko

    2009-06-24

    A beautiful jewel of diamond is insulator. However, boron doping can induce semiconductive, metallic and superconducting properties in diamond. When the boron concentration is tuned over 3 × 10(20) cm(-3), diamonds enter the metallic region and show superconductivity at low temperatures. The metal-insulator transition and superconductivity are analyzed using ARPES, XAS, NMR, IXS, transport and magnetic measurements and so on. This review elucidates the physical properties and mechanism of diamond superconductor as a special superconductivity that occurs in semiconductors.

  17. Examination of Short- and Long-Range Atomic Order Nanocrystalline SiC and Diamond by Powder Diffraction Methods

    Science.gov (United States)

    Palosz, B.; Grzanka, E.; Stelmakh, S.; Gierlotka, S.; Weber, H.-P.; Proffen, T.; Palosz, W.

    2002-01-01

    The real atomic structure of nanocrystals determines unique, key properties of the materials. Determination of the structure presents a challenge due to inherent limitations of standard powder diffraction techniques when applied to nanocrystals. Alternate methodology of the structural analysis of nanocrystals (several nanometers in size) based on Bragg-like scattering and called the "apparent lattice parameter" (alp) is proposed. Application of the alp methodology to examination of the core-shell model of nanocrystals will be presented. The results of application of the alp method to structural analysis of several nanopowders were complemented by those obtained by determination of the Atomic Pair Distribution Function, PDF. Based on synchrotron and neutron diffraction data measured in a large diffraction vector of up to Q = 25 Angstroms(exp -1), the surface stresses in nanocrystalline diamond and SiC were evaluated.

  18. Study of helium embrittlement in boron doped EUROFER97 steels

    Science.gov (United States)

    Gaganidze, E.; Petersen, C.; Aktaa, J.

    2009-04-01

    To simulate helium effects in Reduced Activation Ferritic/Martensitic steels, experimental heats ADS2, ADS3 and ADS4 with the basic composition of EUROFER97 (9%Cr-WVTa) were doped with different contents of natural boron and separated 10B-isotope (0.008-0.112 wt.%) and irradiated in High Flux Reactor (HFR) Petten up to 16.3 dpa at 250-450 °C and in Bor-60 fast reactor in Dimitrovgrad up to 31.8 dpa at 332-338 °C. The embrittlement and hardening are investigated by instrumented Charpy-V tests with subsize specimens. Complete burn-up of 10B isotope under neutron irradiation in HFR Petten led to generation of 84, 432 and 5580 appm He and partial boron-to-helium transformation in Bor-60 led to generation of 9, 46, 880 appm He in ADS2, ADS3 and ADS4 heats, respectively. At low irradiation temperatures Tirr ⩽ 340 °C the boron doped steels show progressive embrittlement with increasing helium amount. Irradiation induced DBTT shift of EUROFER97 based heat doped with 1120 wppm separated 10B isotope could not be quantified due to large embrittlement found in the investigated temperature range. At Tirr ⩽ 340 °C helium induced extra embrittlement is attributed to material hardening induced by helium bubbles and described in terms of phenomenological model.

  19. UV-laser treatment of nanodiamond seeds—a valuable tool for modification of nanocrystalline diamond films properties

    Science.gov (United States)

    Vlček, J.; Fitl, P.; Vrňata, M.; Fekete, L.; Taylor, A.; Fendrych, F.

    2013-01-01

    This work aimed to study the UV-laser treatment of precursor (i.e. nanodiamond (ND) seeds on silicon substrates) and its influence on the properties of grown nanocrystalline diamond (NCD) films. Pulsed Nd : YAG laser operating at the fourth harmonic frequency (laser fluence EL = 250 mJ cm-2, pulse duration 5 ns) was used as a source, equipped with an optical system for focusing laser beam onto the sample, allowing exposure of a local spot and horizontal patterning. The variable parameters were: number of pulses (from 5 to 400) and the working atmosphere (He, Ar and O2). Ablation and/or graphitization of seeded nanodiamond particles were observed. Further the microwave plasma-enhanced chemical vapour deposition was employed to grow NCD films on exposed and non-exposed areas of silicon substrates. The size, shape and density distribution of laser-treated nanodiamond seeds were observed by atomic force microscopy (AFM) and their chemical composition by x-ray photoelectron spectroscopy (XPS) analysis. The resulting NCD films (uniform thickness of 400 nm) were characterized by: Raman spectroscopy to analyse occurrence of graphitic phase, and AFM to observe morphology and surface roughness. The highest RMS roughness (˜85 nm) was achieved when treating the precursor in He atmosphere. Horizontal microstructures of diamond films were fabricated.

  20. Novel aspect in grain size control of nanocrystalline diamond film for thin film waveguide mode resonance sensor application.

    Science.gov (United States)

    Lee, Hak-Joo; Lee, Kyeong-Seok; Cho, Jung-Min; Lee, Taek-Sung; Kim, Inho; Jeong, Doo Seok; Lee, Wook-Seong

    2013-11-27

    Nanocrystalline diamond (NCD) thin film growth was systematically investigated for application for the thin film waveguide mode resonance sensor. The NCD thin film was grown on the Si wafer or on the SiO2-coated sapphire substrate using the hot filament chemical vapor deposition (HFCVD). The structural/optical properties of the samples were characterized by the high-resolution scanning electron microscopy (HRSEM), high-resolution transmission electron microscopy (HRTEM), energy dispersive X-ray spectroscopy (EDS), near edge X-ray absorption fine structure (NEXAFS), X-ray diffraction (XRD), and ultraviolet-visible (UV-vis) spectroscopy. The waveguide modes of the NCD layer were studied by prism coupler technique using laser (wavelength: 632.8 nm) with varying incident angle. A novel aspect was disclosed in the grain size dependence on the growth temperature at the relatively low methane concentration in the precursor gas, which was important for optical property: the grain size increased with decreasing growth temperature, which was contrary to the conventional knowledge prevailing in the microcrystalline diamond (MCD) domain. We have provided discussions to reconcile such observation. An optical waveguide mode resonance was demonstrated in the visible region using the microstructure-controlled transparent NCD thin film waveguide, which provided a strong potential for the waveguide mode resonance sensor applications.

  1. Investigation of bonded hydrogen defects in nanocrystalline diamond films grown with nitrogen/methane/hydrogen plasma at high power conditions

    Science.gov (United States)

    Tang, C. J.; Hou, Haihong; Fernandes, A. J. S.; Jiang, X. F.; Pinto, J. L.; Ye, H.

    2017-02-01

    In this work, we investigate the influence of some growth parameters such as high microwave power ranging from 3.0 to 4.0 kW and N2 additive on the incorporation of bonded hydrogen defects in nanocrystalline diamond (NCD) films grown through a small amount of pure N2 addition into conventional 4% CH4/H2 plasma using a 5 kW microwave plasma CVD system. Incorporation form and content of hydrogen point defects in the NCD films produced with pure N2 addition was analyzed by employing Fourier-transform infrared (FTIR) spectroscopy for the first time. A large amount of hydrogen related defects was detected in all the produced NCD films with N2 additive ranging from 29 to 87 μm thick with grain size from 47 nm to 31 nm. Furthermore, a specific new H related sharp absorption peak appears in all the NCD films grown with pure N2/CH4/H2 plasma at high powers and becomes stronger at powers higher than 3.0 kW and is even stronger than the 2920 cm-1 peak, which is commonly found in CVD diamond films. Based on these experimental findings, the role of high power and pure nitrogen addition on the growth of NCD films including hydrogen defect formation is analyzed and discussed.

  2. The formation and activity of platinum adlayers on diamond electrodes for electrocatalysis

    Science.gov (United States)

    Bennett, Jason Alan

    The research described in this dissertation evaluates the potential of diamond as an advanced carbon electrocatalyst support material. This includes both assessing the physical and electrochemical properties of the material as well as a comprehensive investigation into the nature of metal adlayer formation on the material. The physical and electrochemical properties of boron-doped polycrystalline diamond thin films, prepared with varying levels of sp2-bonded nondiamond carbon impurity, were systematically investigated. This impurity was introduced through adjustment of the methane-to-hydrogen source gas ratio used for the deposition. Increasing the methane-to-hydrogen ratio resulted in an increase in the fraction of grain boundary, the extent of secondary nucleation, and the amount of sp2-bonded nondiamond carbon impurity. The effect of the source gas ratio on the electrochemical response towards several well known redox analytes and the oxygen reduction reaction in both acidic and alkaline media was also investigated. The results demonstrate that the grain boundaries, and the sp2-bonded nondiamond carbon impurity presumably residing there, can have a significant impact on the electrode reaction kinetics for certain redox systems and little influence for others. The morphological and microstructural stability of microcrystalline and nanocrystalline boron-doped diamond thin film electrodes under conditions observed in phosphoric acid fuel cells was investigated. The electrodes were exposed to a 2 h period of anodic polarization in 85% H3PO 4 at ˜180°C and 0.1 A/cm2. Catastrophic degradation was not observed for either type of diamond. The oxidation of the microcrystalline diamond was limited to the surface, and the effects could be reversed upon exposure to a hydrogen plasma. The nanocrystalline diamond exhibited similar responses to well known redox analytes after anodic polarization, however an irreversible increase in the film capacitance was also observed

  3. Boron-doped cobalt oxide thin films and its electrochemical properties

    Science.gov (United States)

    Kerli, S.

    2016-09-01

    The cobalt oxide and boron-doped cobalt oxide thin films were produced by spray deposition method. All films were obtained onto glass and fluorine-doped tin oxide (FTO) substrates at 400∘C and annealed at 550∘C. We present detailed analysis of the morphological and optical properties of films. XRD results show that boron doping disrupts the structure of the films. Morphologies of the films were investigated by using a scanning electron microscopy (SEM). Optical measurements indicate that the band gap energies of the films change with boron concentrations. The electrochemical supercapacitor performance test has been studied in aqueous 6 M KOH electrolyte and with scan rate of 5 mV/s. Measurements show that the largest capacitance is obtained for 3% boron-doped cobalt oxide film.

  4. Surface analysis of CVD diamond exposed to fusion plasma

    NARCIS (Netherlands)

    Porro, S.; De Temmerman, G.; MacLaren, D. A.; Lisgo, S.; Rudakov, D. L.; Westerhout, J.; Wiora, M.; John, P.; Villalpando, I.; Wilson, J. I. B.

    2010-01-01

    Microcrystalline undoped and heavily boron-doped polycrystalline diamond layers have been deposited on various substrates by hot filament CVD and exposed to hydrogen plasma in a linear plasma reactor (Pilot-PSI, The Netherlands) that simulates the high flux and high density plasma conditions of toka

  5. On the development of a dual-layered diamond-coated tool for the effective machining of titanium Ti-6Al-4V alloy

    Science.gov (United States)

    Srinivasan, Balaji; Ramachandra Rao, M. S.; Rao, Balkrishna C.

    2017-01-01

    This work is focused on the development of a dual-layered diamond-coated tungsten carbide tool for machining titanium Ti-6Al-4V alloy. A hot-filament chemical vapor deposition technique was used to synthesize diamond films on tungsten carbide tools. A boron-doped diamond interlayer was added to a microcrystalline diamond layer in an attempt to improve the interface adhesion strength. The dual-layered diamond-coated tool was employed in machining at cutting speeds in the range of 70 to 150 m min-1 with a lower feed and a lower depth of cut of 0.5 mm rev-1 and 0.5 mm, respectively, to operate in the transition from adhesion- to diffusion-tool-wear and thereby arrive at suitable conditions for enhancing tool life. The proposed tool was then compared, on the basis of performance under real-time cutting conditions, with commercially available microcrystalline diamond, nanocrystalline diamond, titanium nitride and uncoated tungsten carbide tools. The life and surface finish of the proposed dual-layered tool and uncoated tungsten carbide were also investigated in interrupted cutting such as milling. The results of this study show a significant improvement in tool life and finish of Ti-6Al-4V parts machined with the dual-layered diamond-coated tool when compared with its uncoated counterpart. These results pave the way for the use of a low-cost tool, with respect to, polycrystalline diamond for enhancing both tool life and machining productivity in critical sectors fabricating parts out of titanium Ti-6Al-4V alloy. The application of this coating technology can also be extended to the machining of non-ferrous alloys owing to its better adhesion strength.

  6. Generation of microdischarges in diamond substrates

    Science.gov (United States)

    Mitea, S.; Zeleznik, M.; Bowden, M. D.; May, P. W.; Fox, N. A.; Hart, J. N.; Fowler, C.; Stevens, R.; StJ Braithwaite, N.

    2012-04-01

    We report the generation of microdischarges in devices composed of microcrystalline diamond. Discharges were generated in device structures with microhollow cathode discharge geometries. One structure consisted of an insulating diamond wafer coated with boron-doped diamond layers on both sides. A second structure consisted of an insulating diamond wafer coated with metal layers on both sides. In each case, a single sub-millimetre hole was machined through the conductor-insulator-conductor structure. The discharges were generated in a helium atmosphere. Breakdown voltages were around 500 V and discharge currents in the range 0.1-2.5 mA were maintained by a sustaining dc voltage of 300 V.

  7. Plasma-induced high efficient synthesis of boron doped reduced graphene oxide for supercapacitors

    DEFF Research Database (Denmark)

    Li, Shaobo; Wang, Zhaofeng; Jiang, Hanmei

    2016-01-01

    In this work, we presented a novel route to synthesize boron doped reduced graphene oxide (rGO) by using the dielectric barrier discharge (DBD) plasma technology under ambient conditions. The doping of boron (1.4 at%) led to a significant improvement in the capacitance of rGO and supercapacitors...

  8. Boron doping compensation of hydrogenated amorphous and polymorphous germanium thin films for infrared detection applications

    Energy Technology Data Exchange (ETDEWEB)

    Moreno, M., E-mail: mmoreno@inaoep.mx [National Institute of Astrophysics, Optics and Electronics, INAOE, P.O. Box 51 and 216, Puebla, Z. P. 72840 Puebla (Mexico); Delgadillo, N. [Universidad Autónoma de Tlaxcala, Av. Universidad No. 1, Z. P. 90006 Tlaxcala (Mexico); Torres, A. [National Institute of Astrophysics, Optics and Electronics, INAOE, P.O. Box 51 and 216, Puebla, Z. P. 72840 Puebla (Mexico); Ambrosio, R. [Technology and Engineering Institute, Ciudad Juarez University UACJ, Av. Del Charro 450N, Z. P. 32310 Chihuahua (Mexico); Rosales, P.; Kosarev, A.; Reyes-Betanzo, C.; Hidalga-Wade, J. de la; Zuniga, C.; Calleja, W. [National Institute of Astrophysics, Optics and Electronics, INAOE, P.O. Box 51 and 216, Puebla, Z. P. 72840 Puebla (Mexico)

    2013-12-02

    In this work we have studied boron doping of hydrogenated amorphous germanium a-Ge:H and polymorphous germanium (pm-Ge:H) in low regimes, in order to compensate the material from n-type (due to oxygen contamination that commonly occurs during plasma deposition) to intrinsic, and in this manner improve the properties that are important for infrared (IR) detection, as activation energy (E{sub a}) and temperature coefficient of resistance (TCR). Electrical, structural and optical characterization was performed on the films produced. Measurements of the temperature dependence of conductivity, room temperature conductivity (σ{sub RT}), E{sub a} and current–voltage characteristics under IR radiation were performed in the compensated a-Ge:H and pm-Ge:H films. Our results demonstrate that, effectively, the values of E{sub a}, TCR and IR detection are improved on the a-Ge:H/pm-Ge:H films, using boron doping in low regimes, which results of interest for infrared detectors. - Highlights: • We reported boron doping compensation of amorphous and polymorphous germanium. • The films were deposited by plasma enhanced chemical vapor deposition. • The aim is to use the films as thermo-sensing elements in un-cooled microbolometers. • Those films have advantages over boron doped a-Si:H used in commercial detectors.

  9. Electrochemical treatment of reverse osmosis concentrate on boron-doped electrodes in undivided and divided cell configurations.

    Science.gov (United States)

    Bagastyo, Arseto Y; Batstone, Damien J; Kristiana, Ina; Escher, Beate I; Joll, Cynthia; Radjenovic, Jelena

    2014-08-30

    An undivided electrolytic cell may offer lower electrochlorination through reduction of chlorine/hypochlorite at the cathode. This study investigated the performance of electrooxidation of reverse osmosis concentrate using boron-doped diamond electrodes in membrane-divided and undivided cells. In both cell configurations, similar extents of chemical oxygen demand and dissolved organic carbon removal were obtained. Continuous formation of chlorinated organic compounds was observed regardless of the membrane presence. However, halogenation of the organic matter did not result in a corresponding increase in toxicity (Vibrio fischeri bioassay performed on extracted samples), with toxicity decreasing slightly until 10AhL(-1), and generally remaining near the initial baseline-toxicity equivalent concentration (TEQ) of the raw concentrate (i.e., ∼2mgL(-1)). The exception was a high range toxicity measure in the undivided cell (i.e., TEQ=11mgL(-1) at 2.4AhL(-1)), which rapidly decreased to 4mgL(-1). The discrepancy between the halogenated organic matter and toxicity patterns may be a consequence of volatile and/or polar halogenated by-products formed in oxidation by OH electrogenerated at the anode. The undivided cell exhibited lower energy compared to the divided cell, 0.25kWhgCOD(-1) and 0.34kWhgCOD(-1), respectively, yet it did not demonstrate any improvement regarding by-products formation.

  10. Low temperature growth of heavy boron-doped hydrogenated Ge epilayers and its application in Ge/Si photodetectors

    Science.gov (United States)

    Kuo, Wei-Cheng; Lee, Ming Jay; Wu, Mount-Learn; Lee, Chien-Chieh; Tsao, I.-Yu; Chang, Jenq-Yang

    2017-04-01

    In this study, heavily boron-doped hydrogenated Ge epilayers are grown on Si substrates at a low growth temperature (220 °C). The quality of the boron-doped epilayers is dependent on the hydrogen flow rate. The optical emission spectroscopic, X-ray diffraction and Hall measurement results demonstrate that better quality boron-doped Ge epilayers can be obtained at low hydrogen flow rates (0 sccm). This reduction in quality is due to an excess of hydrogen in the source gas, which breaks one of the Ge-Ge bonds on the Ge surface, leading to the formation of unnecessary dangling bonds. The structure of the boron doped Ge epilayers is analyzed by transmission electron microscopy and atomic force microscopy. In addition, the performance, based on the I-V characteristics, of Ge/Si photodetectors fabricated with boron doped Ge epilayers produced under different hydrogen flow rates was examined. The photodetectors with boron doped Ge epilayers produced with a low hydrogen flow rate (0 sccm) exhibited a higher responsivity of 0.144 A/W and a lower dark current of 5.33 × 10-7 A at a reverse bias of 1 V.

  11. Graphitized boron-doped carbon foams: Performance as anodes in lithium-ion batteries

    Energy Technology Data Exchange (ETDEWEB)

    Rodriguez, Elena; Camean, Ignacio; Garcia, Roberto [Instituto Nacional del Carbon (CSIC), C/Francisco Pintado Fe 26, 33011 Oviedo (Spain); Garcia, Ana B., E-mail: anabgs@incar.csic.es [Instituto Nacional del Carbon (CSIC), C/Francisco Pintado Fe 26, 33011 Oviedo (Spain)

    2011-05-30

    Highlights: > Because of the catalytic effect of boron, graphite-like foams were prepared. > The presence of substitutional boron in carbon foams improves their anodic performance. > The graphitized boron-doped foams provide reversible capacities of 310 mA h g{sup -1}. - Abstract: The electrochemical performance as potential anodes in lithium-ion batteries of several boron-doped and non-doped graphitic foams with different degree of structural order was investigated by galvanostatic cycling. The boron-doped foams were prepared by the co-pyrolysis of a coal and two boron sources (boron oxide and a borane-pyridine complex), followed by heat treatment in the 2400-2800 deg. C temperature interval. The extent of the graphitization process of the carbon foams depends on boron concentration and source. Because of the catalytic effect of boron, lightweight graphite-like foams were prepared. Boron in the foams was found to be present as carbide (B{sub 4}C), in substitutional positions in the carbon lattice (B-C), bonded to nitrogen (B-N) and forming clusters. Larger reversible lithium storage capacities with values up to {approx}310 mA h g{sup -1} were achieved by using the boron oxide-based carbon foams. Moreover, since the electrochemical anodic performance of these boron-doped foams with different degree of structural order is similar, the beneficial effect of the presence of the B-C boron phase was inferred. However, the bonding of boron with nitrogen in the pyridine borane-based has a negative effect on lithium intercalation.

  12. Plasma-induced highly efficient synthesis of boron doped reduced graphene oxide for supercapacitors.

    Science.gov (United States)

    Li, Shaobo; Wang, Zhaofeng; Jiang, Hanmei; Zhang, Limei; Ren, Jingzheng; Zheng, Mingtao; Dong, Lichun; Sun, Luyi

    2016-09-21

    In this work, we presented a novel route to synthesize boron doped reduced graphene oxide (rGO) by using the dielectric barrier discharge (DBD) plasma technology under ambient conditions. The doping of boron (1.4 at%) led to a significant improvement in the capacitance of rGO and supercapacitors based on the as-synthesized B-rGO exhibited an outstanding specific capacitance.

  13. Cu and Boron Doped Carbon Nitride for Highly Selective Oxidation of Toluene to Benzaldehyde.

    Science.gov (United States)

    Han, Hongling; Ding, Guodong; Wu, Tianbin; Yang, Dexin; Jiang, Tao; Han, Buxing

    2015-07-13

    A novel Cu and boron doped graphitic carbon nitride catalyst (Cu-CNB) was synthesized using cheap precursors and systematically characterized. The selective oxidation of toluene proceeded very smoothly over the catalyst at 70 °C using tert-butyl hydroperoxide (TBHP) as the oxidant to exclusively afford benzaldehyde. The catalyst can be used for at least five cycles without decrease in activity and selectivity.

  14. Boron doped ZnO embedded into reduced graphene oxide for electrochemical supercapacitors

    Energy Technology Data Exchange (ETDEWEB)

    Alver, Ü., E-mail: ualver@ktu.edu.tr [Karadeniz Technical University, Dept. of Metallurgical and Materials Engineering, 61080 Trabzon (Turkey); Tanrıverdi, A. [Kahramanmaras Sutcu Imam University, Department of Physics, 46100 Kahramanmaraş (Turkey)

    2016-08-15

    Highlights: • Boron doped ZnO particles are fabricated and embedded into reduced graphene oxide (RGO) by hydrothermal method. • RGO/ZnO:B composites are used as electrodes for supercapacitors. • Presence of boron in RGO/ZnO composites caused increasing the stability and specific capacitance of electrodes. - Abstract: In this work, reduced graphene oxide/boron doped zinc oxide (RGO/ZnO:B) composites were fabricated by a hydrothermal process and their electrochemical properties were investigated as a function of dopant concentration. First, boron doped ZnO (ZnO:B) particles was fabricated with different boron concentrations (5, 10, 15 and 20 wt%) and then ZnO:B particles were embedded into RGO sheets. The physical properties of sensitized composites were characterized by XRD and SEM. Characterization indicated that the ZnO:B particles with plate-like structure in the composite were dispersed on graphene sheets. The electrochemical properties of the RGO/ZnO:B composite were investigated through cyclic voltammetry, galvanostatic charge/discharge measurements in a 6 M KOH electrolyte. Electrochemical measurements show that the specific capacitance values of RGO/ZnO:B electrodes increase with increasing boron concentration. RGO/ZnO:B composite electrodes (20 wt% B) display the specific capacitance as high as 230.50 F/g at 5 mV/s, which is almost five times higher than that of RGO/ZnO (52.71 F/g).

  15. Boron-doped MnTe semiconductor-sensitized ZnO solar cells

    Indian Academy of Sciences (India)

    Auttasit Tubtimtae; Suwanna Sheangliw; Kritsada Hongsith; Supab Choopun

    2014-10-01

    We studied the photovoltaic performance of boron-doped MnTe semiconductor-sensitized solar cells (B-doped MnTe SSCs). The B-doped MnTe semiconductor was grown on ZnO using two stages of the successive ionic layer adsorption and reaction (SILAR) technique. The two phases of B-doped semiconductor nanoparticles (NPs), i.e. MnTe and MnTe2 were observed with a diameter range of approximately 15–30 nm. The result of the energy conversion efficiency of the sample with boron doping was superior compared to that of an undoped sample, due to the substantial change in the short-circuit current density and the open-circuit voltage. In addition, plots of ( ℎ )2 vs ℎ with band gaps of 1.30 and 1.27 eV were determined for the undoped and B-doped MnTe NPs, respectively. It can be noted that the boron doping effects with the change in the band gap and lead to an improvement in the crystalline quality and also intimate contact between the larger sizes of MnTe NPs. Hence, a noticeably improved photovoltaic performance resulted. However, this kind of semiconductor sensitizer can be further extended by experiments on yielding a higher power conversion efficiency and greater stability of the device.

  16. Boron-doped MnO{sub 2}/carbon fiber composite electrode for supercapacitor

    Energy Technology Data Exchange (ETDEWEB)

    Chi, Hong Zhong, E-mail: hzchi@hdu.edu.cn [College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018 (China); Zhu, Hongjie [College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018 (China); Gao, Linhui [Center of Materials Engineering, Zhejiang Sci-Tech University, Hangzhou 310018 (China)

    2015-10-05

    Highlights: • Interstitial ion in MnO{sub 2} lattice. • Porous film composed by interlocking worm-like nanostructure. • Boron-doped birnessite-type MnO{sub 2}/carbon fiber composite electrode. • Enhanced capacitive properties through nonmetal element doping. - Abstract: The boron-doped MnO{sub 2}/carbon fiber composite electrode has been prepared via in situ redox reaction between potassium permanganate and carbon fibers in the presence of boric acid. The addition of boron as dopant results in the increase of growth-rate of MnO{sub 2} crystal and the formation of worm-like nanostructure. Based on the analysis of binding energy, element boron incorporates into the MnO{sub 2} lattice through interstitial mode. The doped electrode with porous framework is beneficial to pseudocapacitive reaction and surface charge storage, leading to higher specific capacitance and superior rate capability. After experienced 1000 cycles, the boron-doped MnO{sub 2} still retain a higher specific capacitance by about 80% of its initial value. The fall in capacitance is blamed to be the combination of the formation of soluble Mn{sup 2+} and the absence of active site on the outer surface.

  17. Anodic oxidation with doped diamond electrodes: a new advanced oxidation process

    Energy Technology Data Exchange (ETDEWEB)

    Kraft, Alexander; Stadelmann, Manuela; Blaschke, Manfred

    2003-10-31

    Boron-doped diamond anodes allow to directly produce OH{center_dot} radicals from water electrolysis with very high current efficiencies. This has been explained by the very high overvoltage for oxygen production and many other anodic electrode processes on diamond anodes. Additionally, the boron-doped diamond electrodes exhibit a high mechanical and chemical stability. Anodic oxidation with diamond anodes is a new advanced oxidation process (AOP) with many advantages compared to other known chemical and photochemical AOPs. The present work reports on the use of diamond anodes for the chemical oxygen demand (COD) removal from several industrial wastewaters and from two synthetic wastewaters with malic acid and ethylenediaminetetraacetic (EDTA) acid. Current efficiencies for the COD removal between 85 and 100% have been found. The formation and subsequent removal of by-products of the COD oxidation has been investigated for the first time. Economical considerations of this new AOP are included.

  18. Electrochemical treatment of reverse osmosis concentrate on boron-doped electrodes in undivided and divided cell configurations

    Energy Technology Data Exchange (ETDEWEB)

    Bagastyo, Arseto Y. [Advanced Water Management Centre, The University of Queensland, St Lucia, QLD 4072 (Australia); Department of Environmental Engineering, Institut Teknologi Sepuluh Nopember, Surabaya 60111 (Indonesia); Batstone, Damien J. [Advanced Water Management Centre, The University of Queensland, St Lucia, QLD 4072 (Australia); Kristiana, Ina [Curtin Water Quality Research Centre, Resources and Chemistry Precinct, Department of Chemistry, Curtin University, Bentley, Perth, WA 6102 (Australia); Escher, Beate I. [National Research Centre for Environmental Toxicology (Entox), The University of Queensland, Brisbane, QLD 4108 (Australia); Joll, Cynthia [Curtin Water Quality Research Centre, Resources and Chemistry Precinct, Department of Chemistry, Curtin University, Bentley, Perth, WA 6102 (Australia); Radjenovic, Jelena, E-mail: j.radjenovic@uq.edu.au [Advanced Water Management Centre, The University of Queensland, St Lucia, QLD 4072 (Australia)

    2014-08-30

    Highlights: • 100% of COD and ∼70% of DOC was removed in both cell configurations. • ∼21.7 mg L{sup −1} of AOCl and ∼2.3 mg L{sup −1} of AOBr was formed regardless of the membrane use. • The TEQ was far lower than expected given the high AOCl concentrations. • The undivided cell consumed lower energy compared to the divided cell. - Abstract: An undivided electrolytic cell may offer lower electrochlorination through reduction of chlorine/hypochlorite at the cathode. This study investigated the performance of electrooxidation of reverse osmosis concentrate using boron-doped diamond electrodes in membrane-divided and undivided cells. In both cell configurations, similar extents of chemical oxygen demand and dissolved organic carbon removal were obtained. Continuous formation of chlorinated organic compounds was observed regardless of the membrane presence. However, halogenation of the organic matter did not result in a corresponding increase in toxicity (Vibrio fischeri bioassay performed on extracted samples), with toxicity decreasing slightly until 10 Ah L{sup −1}, and generally remaining near the initial baseline-toxicity equivalent concentration (TEQ) of the raw concentrate (i.e., ∼2 mg L{sup −1}). The exception was a high range toxicity measure in the undivided cell (i.e., TEQ = 11 mg L{sup −1} at 2.4 Ah L{sup −1}), which rapidly decreased to 4 mg L{sup −1}. The discrepancy between the halogenated organic matter and toxicity patterns may be a consequence of volatile and/or polar halogenated by-products formed in oxidation by OH· electrogenerated at the anode. The undivided cell exhibited lower energy compared to the divided cell, 0.25 kWh gCOD{sup −1} and 0.34 kWh gCOD{sup −1}, respectively, yet it did not demonstrate any improvement regarding by-products formation.

  19. Raman spectral research on MPCVD diamond film

    Institute of Scientific and Technical Information of China (English)

    YAN Yan; ZHANG Shulin; ZHAO Xinsheng; HAN Yisong; HOU Li

    2003-01-01

    Raman spectra of MPCVD diamond film have been studied. Based on the resonance size selection effect, we think that there is no nano-crystalline diamond in the sample and the Raman peak at 1145 cm-1 can not be considered as the characteristic peak of nano-crystalline diamond though it has been used as the characteristic peak of nano-crystalline diamond widely for many years.

  20. Synthesis, Characterization, and Evaluation of Boron-Doped Iron Oxides for the Photocatalytic Degradation of Atrazine under Visible Light

    Directory of Open Access Journals (Sweden)

    Shan Hu

    2012-01-01

    Full Text Available Photocatalytic degradation of atrazine by boron-doped iron oxides under visible light irradiation was investigated. In this work, boron-doped goethite and hematite were successfully prepared by sol-gel method with trimethylborate as boron precursor. The powders were characterized by XRD, UV-vis diffuse reflectance spectra, and porosimetry analysis. The results showed that boron doping could influence the crystal structure, enlarge the BET surface area, improve light absorption ability, and narrow their band-gap energy. The photocatalytic activity of B-doped iron oxides was evaluated in the degradation of atrazine under the visible light irradiation, and B-doped iron oxides showed higher atrazine degradation rate than that of pristine iron oxides. Particularly, B-doped goethite exhibited better photocatalytic activity than B-doped hematite.

  1. Electrochemical Protein Cleavage in a Microfluidic Cell with Integrated Boron Doped Diamond Electrodes

    NARCIS (Netherlands)

    van den Brink, Floris T G; Zhang, Tao; Ma, Liwei; Bomer, Johan; Odijk, Mathieu; Olthuis, Wouter; Permentier, Hjalmar P; Bischoff, Rainer; van den Berg, Albert

    2016-01-01

    Specific electrochemical cleavage of peptide bonds at the C-terminal side of tyrosine and tryptophan generates peptides amenable to liquid chromatography-tandem mass spectrometry (LC-MS/MS) analysis for protein identification. To this end we developed a microfluidic electrochemical cell of 160 nL vo

  2. Electrochemical Characteristics and Applications of Boron-Doped Polycrystalline Diamond Film Electrodes

    Institute of Scientific and Technical Information of China (English)

    1998-01-01

    ns of Boron-Doped Polycrystalline Diamond Film ElectrodesTX1IntroductionInelectrochemicalstudies,electrodesmadeofcom-monlyused...

  3. Electrochemical oxidation of amoxicillin in its pharmaceutical formulation at boron doped diamond (BDD electrode

    Directory of Open Access Journals (Sweden)

    Corneil Quand-Meme Gnamba

    2015-08-01

    Full Text Available In this work, voltammetric andelectrolysis experiments have been carried out on a conductive boron dopeddiamond (BDD electrode in solution containing amoxicillin in itspharmaceutical formulation. The physical characterization of the BDD surface byscanning electron microscopy (SEM reveals a polycrystalline structure withgrain sizes ranging between 0.3 and 0.6 µm. With Raman spectroscopy, BDDsurface is composed of diamons (Csp3 type carbon (Csp3and graphitic type carbon (Csp2. The electrochemical characterization of the BDD electrode in sulfuric acid electrolyte showed a wide potential window worthing 2.74 V. The oxidation of Amoxicillin showed an irreversible anodic wave on the voltammogram in the domain of water stability indicating a direct oxidation of amoxicillin at BDD surface. The treatment of Amoxicillin in the synthetic wastewaters under various constant current densities 20, 50, 100, 135 mA cm-2 on BDD showed that Amoxicillin is highly reducedunder 100 mA cm-2 reaching 92% of the Chemical Oxygen Demand (CODremoval after 5 h of electrolysis. Investigation performed in perchloric acidas supporting electrolyte led to 87% of COD removal after 5 h of electrolysis.Mineralization of amoxicillin occurs on BDD and the chemical oxygen demandremoval was higher in sulfuric acid than in perchloric acid owing to theinvolvement of the in-situ formed persulfate and perchlorate  to the degradation process mainly in the bulkof the solution. The instantaneous current efficiency (ICE presents anexponential decay indicating that the process was limited by diffusion. Thespecific energy consumed after 5h of the amoxicillin electrolysis was 0.096 kWh COD-1and 0.035 kWh COD-1 in sulfuric acid and in perchloric acidrespectively.

  4. Structural and electronic properties of boron-doped double-walled silicon carbide nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Behzad, Somayeh, E-mail: somayeh.behzad@gmail.co [Physics Department, Faculty of Science, Razi University, Kermanshah (Iran, Islamic Republic of); Moradian, Rostam [Physics Department, Faculty of Science, Razi University, Kermanshah (Iran, Islamic Republic of); Nano Science and Technology Research Center, Razi University, Kermanshah (Iran, Islamic Republic of); Computational Physical Science Research Laboratory, Department of Nano Science, Institute for Studies in Theoretical Physics and Mathematics (IPM), P.O. Box 19395-5531, Tehran (Iran, Islamic Republic of); Chegel, Raad [Physics Department, Faculty of Science, Razi University, Kermanshah (Iran, Islamic Republic of)

    2010-12-01

    The effects of boron doping on the structural and electronic properties of (6,0)-(14,0) double-walled silicon carbide nanotube (DWSiCNT) are investigated by using spin-polarized density functional theory. It is found that boron atom could be more easily doped in the inner tube. Our calculations indicate that a Si site is favorable for B under C-rich condition and a C site is favorable under Si-rich condition. Additionally, B-substitution at either single carbon or silicon atom site in DWSiCNT could induce spontaneous magnetization.

  5. Structural Features of Boron-Doped Si(113) Surfaces Simulated by ab initio Calculations

    Institute of Scientific and Technical Information of China (English)

    LIAO Long-Zhong; LIU Zheng-Hui; ZHANG Zhao-Hui

    2008-01-01

    Based on ab initio calculations, boron-doped Si(113) surfaces have been simulated and atomic structures of the surfaces have been proposed. It has been determined that surface features of empty and filled states that are separately localized at pentamers and adatoms indicates a low surface density of B atoms, while it is attributed to heavy doping of B atoms at the second layer that pentamers and adatoms are both present in an image of scanning tunnelling microscopy. B doping at the second layer should be balanced by adsorbed B or Si atoms beside the adatoms and inserted B interstitials below the adatoms.

  6. Detecting CO, NO and NO2 gases by Boron-doped graphene nanoribbon molecular devices

    Science.gov (United States)

    Xie, Zhen; Zuo, Xi; Zhang, Guang-Ping; Li, Zong-Liang; Wang, Chuan-Kui

    2016-07-01

    Combining nonequilibrium Green's function method and density functional theory, an azulene-like dipole molecule sandwiched between two graphene nanoribbon (GNR) electrodes are explored to gas sensors. Both the pristine zigzag edged GNR and Boron-doped armchair-edged GNR are considered in this study. It shows that certain specific toxic molecules CO, NO and NO2 would adsorb on the doped Boron atoms of the GNR, resulting in a dramatic change in the current-voltage profile. Changes in the subbands of electrodes, induced by gas adsorption, are responsible for the variation of current. The devices are thus demonstrated to be sensitive nanosensors for these toxic gases.

  7. Deposition and Characterization of Nanocrystalline Diamond Films on Mirror-Polished Si Substrate by Biased Enhanced Microwave Plasma Chemical Vapor Deposition

    Science.gov (United States)

    Soga, T.; Sharda, T.; Jimbo, T.; Umeno, M.

    Hard and smooth nanocrystalline diamond (NCD) thin films were deposited on polished silicon substrates by biased enhanced growth in microwave plasma chemical vapor deposition. The films deposited with varying the methane concentration and biasing voltage were characterized by Raman spectroscopy, nano-indenter, x-ray diffraction and atomic force microscopy. Stress in the films increases with decreasing methane concentration in the gas-phase and with increasing biasing. The adhesion between NCD film and Si substrate is very strong sustaining the compressive stress as high as high as 85 GPa. It was hypothesized that hydrogen content of the films and graphitic content of the films are responsible in generating stress. The hardness is well correlated with the Raman peak intensity ratio of NCD peak to G peak.

  8. Rectifying Properties of a Nitrogen/Boron-Doped Capped-Carbon-Nanotube-Based Molecular Junction

    Institute of Scientific and Technical Information of China (English)

    ZHAO Peng; LIU De-Sheng; ZHANG Ying; WANG Pei-Ji; ZHANG Zhong

    2011-01-01

    @@ Based on the non-equilibrium Green's function method and first-principles density functional theory calculations, we investigate the electronic transport properties of a nitrogen/boron-doped capped-single-walled carbonnanotube-based molecular junction.Obvious rectifying behavior is observed and it is strongly dependent on the doping site.The best rectifying performance can be carried out when the nitrogen/boron atom dopes at a carbon site in the second layer.Moreover, the rectifying performance can be further improved by adjusting the distance between the Cso nanotube caps.%Based on the non-equilibrium Green's function method and first-principles density functional theory calculations, we investigate the electronic transport properties of a nitrogen/boron-doped capped-single-walled carbon-nanotube-based molecular junction. Obvious rectifying behavior is observed and it is strongly dependent on the doping site. The best rectifying performance can be carried out when the nitrogen/boron atom dopes at a carbon site in the second layer. Moreover, the rectifying performance can be further improved by adjusting the distance between the C60 nanotube caps.

  9. Bare and boron-doped cubic silicon carbide nanowires for electrochemical detection of nitrite sensitively.

    Science.gov (United States)

    Yang, Tao; Zhang, Liqin; Hou, Xinmei; Chen, Junhong; Chou, Kuo-Chih

    2016-04-25

    Fabrication of eletrochemical sensors based on wide bandgap compound semiconductors has attracted increasing interest in recent years. Here we report for the first time electrochemical nitrite sensors based on cubic silicon carbide (SiC) nanowires (NWs) with smooth surface and boron-doped cubic SiC NWs with fin-like structure. Multiple techniques including scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and electron energy loss spectroscopy (EELS) were used to characterize SiC and boron-doped SiC NWs. As for the electrochemical behavior of both SiC NWs electrode, the cyclic voltammetric results show that both SiC electrodes exhibit wide potential window and excellent electrocatalytic activity toward nitrite oxidation. Differential pulse voltammetry (DPV) determination reveals that there exists a good linear relationship between the oxidation peak current and the concentration in the range of 50-15000 μmoL L(-1) (cubic SiC NWs) and 5-8000 μmoL L(-1) (B-doped cubic SiC NWs) with the detection limitation of 5 and 0.5 μmoL L(-1) respectively. Compared with previously reported results, both as-prepared nitrite sensors exhibit wider linear response range with comparable high sensitivity, high stability and reproducibility.

  10. High-concentration boron doping of graphene nanoplatelets by simple thermal annealing and their supercapacitive properties

    Science.gov (United States)

    Yeom, Da-Young; Jeon, Woojin; Tu, Nguyen Dien Kha; Yeo, So Young; Lee, Sang-Soo; Sung, Bong June; Chang, Hyejung; Lim, Jung Ah; Kim, Heesuk

    2015-05-01

    For the utilization of graphene in various energy storage and conversion applications, it must be synthesized in bulk with reliable and controllable electrical properties. Although nitrogen-doped graphene shows a high doping efficiency, its electrical properties can be easily affected by oxygen and water impurities from the environment. We here report that boron-doped graphene nanoplatelets with desirable electrical properties can be prepared by the simultaneous reduction and boron-doping of graphene oxide (GO) at a high annealing temperature. B-doped graphene nanoplatelets prepared at 1000 °C show a maximum boron concentration of 6.04 ± 1.44 at %, which is the highest value among B-doped graphenes prepared using various methods. With well-mixed GO and g-B2O3 as the dopant, highly uniform doping is achieved for potentially gram-scale production. In addition, as a proof-of-concept, highly B-doped graphene nanoplatelets were used as an electrode of an electrochemical double-layer capacitor (EDLC) and showed an excellent specific capacitance value of 448 F/g in an aqueous electrolyte without additional conductive additives. We believe that B-doped graphene nanoplatelets can also be used in other applications such as electrocatalyst and nano-electronics because of their reliable and controllable electrical properties regardless of the outer environment.

  11. Boron doped ZnO embedded into reduced graphene oxide for electrochemical supercapacitors

    Science.gov (United States)

    Alver, Ü.; Tanrıverdi, A.

    2016-08-01

    In this work, reduced graphene oxide/boron doped zinc oxide (RGO/ZnO:B) composites were fabricated by a hydrothermal process and their electrochemical properties were investigated as a function of dopant concentration. First, boron doped ZnO (ZnO:B) particles was fabricated with different boron concentrations (5, 10, 15 and 20 wt%) and then ZnO:B particles were embedded into RGO sheets. The physical properties of sensitized composites were characterized by XRD and SEM. Characterization indicated that the ZnO:B particles with plate-like structure in the composite were dispersed on graphene sheets. The electrochemical properties of the RGO/ZnO:B composite were investigated through cyclic voltammetry, galvanostatic charge/discharge measurements in a 6 M KOH electrolyte. Electrochemical measurements show that the specific capacitance values of RGO/ZnO:B electrodes increase with increasing boron concentration. RGO/ZnO:B composite electrodes (20 wt% B) display the specific capacitance as high as 230.50 F/g at 5 mV/s, which is almost five times higher than that of RGO/ZnO (52.71 F/g).

  12. Copper diffusivity in boron-doped silicon wafer measured by dynamic secondary ion mass spectrometry

    Energy Technology Data Exchange (ETDEWEB)

    Koh, Songfoo [S.E.H (M) Sdn. Bhd., Lot 2, Lorong Enggang 35, Ulu Klang FTZ, 54200 Selangor (Malaysia); You, Ahheng [Faculty of Engineering and Technology, Multimedia University, Jalan Ayer Keroh Lama, Bukit Beruang, 75450 Melaka (Malaysia); Tou, Teckyong, E-mail: tytou@mmu.edu.my [Faculty of Engineering, Multimedia Univesity, Jalan Multimedia, 63100 Cyberjaya (Malaysia)

    2013-03-20

    Highlights: ► Effective copper diffusivity in boron-doped silicon wafer was measured. ► Dynamic secondary ion mass spectrometry was used. ► Interstitial copper ions were first drifted to surface region and allowed to back-diffuse. ► Boron concentration largely influenced the effect copper diffusivity. -- Abstract: The effective copper diffusivity (D{sub eff}) in boron-doped silicon wafer was measured using a Dynamic Secondary Ion Mass Spectrometry (D-SIMS) that was incorporated with an out-drift technique. By this technique, positive interstitial copper ions (Cu{sub I}{sup +}) migrated to the surface region when a continuous charge of electrons showered on the oxidized silicon wafer, which was also bombarded by primary O{sub 2}{sup +} ions. The Cu{sub I}{sup +} ions at the surface region diffused back to the bulk when the electron showering stopped. The D-SIMS recorded the real-time distribution of Cu{sub I}{sup +} ions, generating depth profiles for in-diffusion of copper for silicon-wafer samples with different boron concentrations. These were curve-fitted using the standard diffusion expressions to obtain different D{sub eff} values, and compared with other measurement techniques.

  13. Nanocrystalline-diamond thin films with high pH and penicillin sensitivity prepared on a capacitive Si-SiO{sub 2} structure

    Energy Technology Data Exchange (ETDEWEB)

    Poghossian, A. [Institute of Nano- and Biotechnologies (INB), Aachen University of Applied Sciences, Campus Juelich, Juelich (Germany); Institute of Bio- and Nanosystems (IBN-2), Research Centre Juelich GmbH, Juelich (Germany)], E-mail: a.poghossian@fz-juelich.de; Abouzar, M.H.; Razavi, A.; Baecker, M. [Institute of Nano- and Biotechnologies (INB), Aachen University of Applied Sciences, Campus Juelich, Juelich (Germany); Institute of Bio- and Nanosystems (IBN-2), Research Centre Juelich GmbH, Juelich (Germany); Bijnens, N. [Institute for Materials Research, Hasselt University, Diepenbeek (Belgium); Williams, O.A.; Haenen, K. [Institute for Materials Research, Hasselt University, Diepenbeek (Belgium); Division IMOMEC, IMEC vzw., Diepenbeek (Belgium); Moritz, W. [Humboldt University Berlin, Berlin (Germany); Wagner, P. [Institute for Materials Research, Hasselt University, Diepenbeek (Belgium); Schoening, M.J. [Institute of Nano- and Biotechnologies (INB), Aachen University of Applied Sciences, Campus Juelich, Juelich (Germany); Institute of Bio- and Nanosystems (IBN-2), Research Centre Juelich GmbH, Juelich (Germany)

    2009-10-30

    A capacitive field-effect EDIS (electrolyte-diamond-insulator-semiconductor) sensor with improved pH and penicillin sensitivity has been realised using a nanocrystalline-diamond (NCD) film as sensitive gate material. The NCD growth process on SiO{sub 2} as well as an additional surface treatment in oxidising medium have been optimised to provide high pH-sensitive, non-porous O-terminated films without damage of the underlying SiO{sub 2} layer. The surface morphology of O-terminated NCD thin films and the layer structure of EDIS sensors have been studied by scanning electron microscopy (SEM) and transmission electron microscopy (TEM) methods. To establish the relative coverage of the surface functional groups generated by the oxidation of NCD surfaces, X-ray photoelectron spectroscopy analysis was carried out. The hydrophilicity of NCD thin films has been studied by water contact-angle measurements. A nearly Nernstian pH sensitivity of 54-57 mV/pH has been observed for O-terminated NCD films treated in an oxidising boiling mixture for 80 min and in oxygen plasma. The high pH-sensitive properties of O-terminated NCD have been used to develop an EDIS-based penicillin biosensor. A freshly prepared penicillin biosensor possesses a high sensitivity of 85 mV/decade in the concentration range of 0.1-2.5 mM penicillin G. The lower detection limit is 5 {mu}M.

  14. Green synthesis of boron doped graphene and its application as high performance anode material in Li ion battery

    Energy Technology Data Exchange (ETDEWEB)

    Sahoo, Madhumita; Sreena, K.P.; Vinayan, B.P.; Ramaprabhu, S., E-mail: ramp@iitm.ac.in

    2015-01-15

    Graphical abstract: Boron doped graphene (B-G), synthesized by simple hydrogen induced reduction technique using boric acid as boron precursor, have more uneven surface as a result of smaller bonding distance of boron compared to carbon, showed high capacity and high rate capability compared to pristine graphene as an anode material for Li ion battery application. - Abstract: The present work demonstrates a facile route for the large-scale, catalyst free, and green synthesis approach of boron doped graphene (B-G) and its use as high performance anode material for Li ion battery (LIB) application. Boron atoms were doped into graphene framework with an atomic percentage of 5.93% via hydrogen induced thermal reduction technique using graphite oxide and boric acid as precursors. Various characterization techniques were used to confirm the boron doping in graphene sheets. B-G as anode material shows a discharge capacity of 548 mAh g{sup −1} at 100 mA g{sup −1} after 30th cycles. At high current density value of 1 A g{sup −1}, B-G as anode material enhances the specific capacity by about 1.7 times compared to pristine graphene. The present study shows a simplistic way of boron doping in graphene leading to an enhanced Li ion adsorption due to the change in electronic states.

  15. Chemical Analysis of Impurity Boron Atoms in Diamond Using Soft X-ray Emission Spectroscopy

    OpenAIRE

    Muramatsu, Yasuji

    2009-01-01

    To analyze the local structure and/or chemical states of boron atoms in boron-doped diamond, which can be synthesized by the microwave plasma-assisted chemical vapor deposition method (CVD-B-diamond) and the temperature gradient method at high pressure and high temperature (HPT-B-diamond), we measured the soft X-ray emission spectra in the CK and BK regions of B-diamonds using synchrotron radiation at the Advanced Light Source (ALS). X-ray spectral analyses using the fingerprint method and mo...

  16. New Pathways and Metrics for Enhanced, Reversible Hydrogen Storage in Boron-Doped Carbon Nanospaces

    Energy Technology Data Exchange (ETDEWEB)

    Pfeifer, Peter [University of Missouri; Wexler, Carlos [University of Missouri; Hawthorne, M. Frederick [University of Missouri; Lee, Mark W. [University of Missouri; Jalistegi, Satish S. [University of Missouri

    2014-08-14

    This project, since its start in 2007—entitled “Networks of boron-doped carbon nanopores for low-pressure reversible hydrogen storage” (2007-10) and “New pathways and metrics for enhanced, reversible hydrogen storage in boron-doped carbon nanospaces” (2010-13)—is in support of the DOE's National Hydrogen Storage Project, as part of the DOE Hydrogen and Fuel Cells Program’s comprehensive efforts to enable the widespread commercialization of hydrogen and fuel cell technologies in diverse sectors of the economy. Hydrogen storage is widely recognized as a critical enabling technology for the successful commercialization and market acceptance of hydrogen powered vehicles. Storing sufficient hydrogen on board a wide range of vehicle platforms, at energy densities comparable to gasoline, without compromising passenger or cargo space, remains an outstanding technical challenge. Of the main three thrust areas in 2007—metal hydrides, chemical hydrogen storage, and sorption-based hydrogen storage—sorption-based storage, i.e., storage of molecular hydrogen by adsorption on high-surface-area materials (carbons, metal-organic frameworks, and other porous organic networks), has emerged as the most promising path toward achieving the 2017 DOE storage targets of 0.055 kg H2/kg system (“5.5 wt%”) and 0.040 kg H2/liter system. The objective of the project is to develop high-surface-area carbon materials that are boron-doped by incorporation of boron into the carbon lattice at the outset, i.e., during the synthesis of the material. The rationale for boron-doping is the prediction that boron atoms in carbon will raise the binding energy of hydro- gen from 4-5 kJ/mol on the undoped surface to 10-14 kJ/mol on a doped surface, and accordingly the hydro- gen storage capacity of the material. The mechanism for the increase in binding energy is electron donation from H2 to electron-deficient B atoms, in the form of sp2 boron-carbon bonds. Our team is proud to have

  17. Boron-doped cadmium oxide composite structures and their electrochemical measurements

    Energy Technology Data Exchange (ETDEWEB)

    Lokhande, B.J., E-mail: bjlokhande@yahoo.com [Lab of Smart Mtrls Supercapacitive and Energy Studies, School of Physical Sciences, Solapur University, Solapur 413255, Maharashtra (India); Ambare, R.C. [Lab of Smart Mtrls Supercapacitive and Energy Studies, School of Physical Sciences, Solapur University, Solapur 413255, Maharashtra (India); Mane, R.S. [School of Physical Sciences, Swami Ramanand Teerth Marathwada University, Nanded 431606 (India); Bharadwaj, S.R. [Chemistry Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400085 (India)

    2013-08-01

    Graphical abstract: Conducting nano-fibrous 3% boron doped cadmium oxide thin films were prepared by SILAR and its super capacitive properties were studied. - Highlights: • Samples are of nanofibrous nature. • All samples shows pseudocapacitive behavior. • 3% B doped CdO shows good specific capacitance. • 3% B doped CdO shows maximum 74.93% efficiency at 14 mA/cm{sup 2}. • 3% B doped CdO shows 0.8 Ω internal resistance. - Abstract: Boron-doped and undoped cadmium oxide composite nanostructures in thin film form were prepared onto stainless steel substrates by a successive ionic layer adsorption and reaction method using aqueous solutions of cadmium nitrate, boric acid and 1% H{sub 2}O{sub 2}. As-deposited films were annealed at 623 K for 1 h. The X-ray diffraction study shows crystalline behavior for both doped and undoped films with a porous topography and nano-wires type architecture, as observed in SEM image. Wettability test confirms the hydrophilic surface with 58° contact angle value. Estimated band gap energy is around 1.9 eV. Electrochemical behavior of the deposited films is attempted in 1 M KOH electrolyte using cyclic voltammetry (CV), electrochemical impedance spectroscopy and galvanostatic charge–discharge tests. Maximum values of the specific capacitance, specific energy and specific power obtained for 3% B doped CdO film at 2 mV/s scan rate are 20.05 F/g, 1.22 Wh/kg and 3.25 kW/kg, respectively.

  18. Preparation of Cubic Boron Nitride Coating on WC-Co Substrate by Micro/Nanocrystalline Diamond Film Interlayer%基于微纳米金刚石过渡层的cBN刀具涂层制备

    Institute of Scientific and Technical Information of China (English)

    徐锋; 左敦稳; 张旭辉; 户海峰; 张骋; 王珉

    2013-01-01

    Cubic Boron Nitride(cBN) is a super-hard material, of which hardness is only less than diamond. But it has excellent chemical stability, especially no chemical reaction with ferrous materials. The cBN coating has irreplaceable function in the application of modern cutting tools. Research is carried out on the preparation of cBN coating on YG6 by micro/nanocrystalline diamond (M/NCD) film inter-layer. The micro/nanocrystalline diamond film is deposited in hot filament chemical vapor deposition system and cBN is deposited in radio frequency magnetron sputtering system. The scanning electron microscopy (SEM), Raman, atomic force microscopy(AFM), Fourier transferred infrared(FTIR) and in-denter are used to investigate the content, morphology and adhesion of the coating. The results show that the adhesion of cBN coating on WC-Co by micro/nanocrystalline diamond interlayer is much higher than that by nano diamond interlayer. The moderate bias voltage is important for the cBN film deposition in the magnetron sputtering process.%立方氮化硼(Cubic Boron Nitride,cBN)是仅次于金刚石的超硬材料,比金刚石具有更高的化学稳定性,可以胜任铁系金属的加工.本文在YG6硬质合金上基于微纳米金刚石过渡层开展cBN涂层的制备研究.本文在热丝化学气相沉积系统中制备微纳米金刚石过渡层(Micro/nanocrystalline diamond,M/NCD),在射频磁控溅射系统中制备cBN涂层,并对M/NCD与cBN涂层进行了成分、微观形貌与结合性能的研究.研究结果发现,在硬质合金基体上,M/NCD过渡层的结合性能明显优于NCD过渡层.磁控溅射制备cBN涂层过程中,存在适合cBN沉积的衬底偏压阈值,过高或过低的衬底偏压均不利于cBN含量的提高.

  19. Fabrication and Application of High Quality Diamond-coated Tools

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    Diamond-coated tools were fabricated using Co-cemented carbide inserts as substrates by the electronically aided hot filament chemical vapor deposition (EACVD). An amount of additive in an acid solution was used to promote the Co etching of the substrate surface. The surface of the WC-Co substrate was decarburized by microwave plasma with Ar-H 2 gas. Effect of the new substrate pretreatment on the adhesion of diamond films was investigated. A boron-doped solution was brushed on the tool surface to diffuse ...

  20. Aptamer strategy for ATP detection on nanocrystalline diamond functionalized by a nitrogen and hydrogen radical beam system

    Science.gov (United States)

    Suaebah, E.; Seshimo, Y.; Shibata, M.; Kono, S.; Hasegawa, M.; Kawarada, H.

    2017-01-01

    Here, we report a novel method for micropatterning oligonucleotides on the diamond surface via forming amine groups on the diamond surface by nitrogen/hydrogen radical treatment. The covalent bonding of the supporting oligonucleotide and characterization of an immobilized hybridized oligonucleotide with Cy5 modification were investigated by fluorescence microscopy. To investigate the effectiveness of nitrogen/hydrogen radical treatment for amine termination, two types of radical treatment were used: hydrogen/nitrogen radical treatment and pure nitrogen radical treatment. From the results, hydrogen/nitrogen radical treatment produces amine (NH2) termination on the diamond surface. The effect of amine termination was investigated by immobilization of single-stranded DNA via amide bonding between surface NH2 groups and COOH groups terminating the DNA. The immobilized single-stranded DNA (supporting DNA), which has a complementary relationship with the adenosine triphosphate (ATP) aptamer (DNA), hybridizes with the aptamer with attached fluorescence dye. When ATP molecules approach the double-stranded DNA, the aptamer forms a close relationship with the supporting DNA and combines with ATP. ATP detection was effectively carried out by reduction of fluorescence.

  1. Effects of boron doping in TiO2 nanotubes and the performance of dye-sensitized solar cells

    Science.gov (United States)

    Subramanian, Alagesan; Wang, Hong-Wen

    2012-06-01

    Titanium nanotubes doped with boron used as the photoelectrode for dye-sensitized solar cells were investigated. The materials were characterized by SEM, XRD, and UV-vis spectroscopy and their photoconversion efficiencies were evaluated. The chemical compositions of TiO2 nanotubes (TNA) and boron doped TNA (B-TNA) were identified by the energy dispersive X-ray spectroscopy (EDS). XRD evidenced the presence of anatase as the main phase and presented the existence of boron elements at interstitial sites between the TiO2 lattices. The UV-vis spectra indicated the narrowing of band gap upon doping boron into titanium nanotubes. The photovoltaic properties were measured by a current-voltage meter under AM1.5 simulated light radiation. The boron-doped TiO2 nanotube arrays showed an enhanced performance with a photocurrent density of 7.85 ± 0.20 mA/cm2 and an overall conversion efficiency (η) of 3.44 ± 0.10%. The enhanced performance was attributed to the enhanced electron injection rate and retardation of the charge recombination, which could be due to perfect matching between the LUMO of dye molecules and the conduction band of TiO2. Electrochemical impedance spectroscopy (EIS) measurement indicated the longer electron lifetime and reduced TiO2/dye/electrolyte interface resistance for boron doped TiO2 nanotubes than that of undoped TiO2 nanotubes.

  2. Characterization and photocatalytic activity of boron-doped TiO2 thin films prepared by liquid phase deposition technique

    Indian Academy of Sciences (India)

    Noor Shahina Begum; H M Farveez Ahmed; O M Hussain

    2008-10-01

    Boron doped TiO2 thin films have been successfully deposited on glass substrate and silicon wafer at 30°C from an aqueous solution of ammonium hexa-fluoro titanate and boron trifluoride by liquid phase deposition technique. The boric acid was used as an – scavenger. The resultant films were characterized by XRD, EDAX, UV and microstructures by SEM. The result shows the deposited film to be amorphous which becomes crystalline between 400 and 500°C. The EDAX and XRD data confirm the existence of boron atom in TiO2 matrix and a small peak corresponding to rutile phase was also found. Boron doped TiO2 thin films can be used as photocatalyst for the photodegradation of chlorobenzene which is a great environmental hazard. It was found that chlorobenzene undergoes degradation efficiently in presence of boron doped TiO2 thin films by exposing its aqueous solution to visible light. The photocatalytic activity increases with increase in the concentration of boron.

  3. Investigation of optical, structural and morphological properties of nanostructured boron doped TiO2 thin films

    Indian Academy of Sciences (India)

    Savaş Sönmezoǧlu; Banu Erdoǧan; İskender Askeroǧlu

    2013-12-01

    Pure and different ratios (1, 3, 5, 7 and 10%) of boron doped TiO2 thin films were grown on the glass substrate by using sol–gel dip coating method having some benefits such as basic and easy applicability compared to other thin film production methods. To investigate the effect of boron doped on the physical properties of TiO2, structural, morphological and optical properties of growth thin films were examined. 1% boron-doping has no effect on optical properties of TiO2 thin film; however, optical properties vary with > 1%. From X-ray diffraction spectra, it is seen that TiO2 thin films together with doping of boron were formed along with TiB2 hexagonal structure having (111) orientation, B2O3 cubic structure having (310) orientation, TiB0.024O2 tetragonal structure having rutile phase (110) orientation and polycrystalline structures. From SEM images, it is seen that particles together with doping of boron have homogeneously distributed and held onto surface.

  4. Conductivity and superconductivity in heavily vacant diamond

    Directory of Open Access Journals (Sweden)

    S A Jafari

    2009-08-01

    Full Text Available   Motivated by the idea of impurity band superconductivity in heavily Boron doped diamond, we investigate the doping of various elements into diamond to address the question, which impurity band can offer a better DOS at the Fermi level. Surprisingly, we find that the vacancy does the best job in producing the largest DOS at the Fermi surface. To investigate the effect of disorder in Anderson localization of the resulting impurity band, we use a simple tight-binding model. Our preliminary study based on the kernel polynomial method shows that the impurity band is already localized at the concentration of 10-3. Around the vacancy concentration of 0.006 the whole spectrum of diamond becomes localized and quantum percolation takes place. Therefore to achieve conducting bands at concentrations on the scale of 5-10 percent, one needs to introduce correlations such as hopping among the vacancies .

  5. Acoustic and optical phonons in metallic diamond

    Directory of Open Access Journals (Sweden)

    M. Hoesch, T. Fukuda, T. Takenouchi, J.P. Sutter, S. Tsutsui, A.Q.R. Baron, M. Nagao, Y. Takano, H. Kawarada and J. Mizuki

    2006-01-01

    Full Text Available The dispersion of acoustic and optical phonons in highly boron-doped diamond has been measured by inelastic X-ray scattering at an energy resolution of 6.4 meV. The sample is doped in the metallic regime and shows superconductivity below 4.2 K (midpoint. The data are compared to pure and nitrogen-doped diamond that represent the non-metallic state. No difference is found for the acoustic phonons in the three samples, while the optical phonons show a shift of the dispersion (softening in qualitative agreement with earlier results from Raman spectroscopy. The presence of boron and nitrogen incorporated into the diamond lattice leads to structural disorder. Evidence for this is found both in the observation of otherwise symmetry-forbidded Bragg intensity at (0 0 2 and intensity from acoustic phonon modes in the vicinity of (0 0 2.

  6. Properties of Boron-dopedμc-Ge:H Films Deposited by Hot-wire CVD

    Institute of Scientific and Technical Information of China (English)

    HUANG Haibin; SHEN Honglie; WU Tianru; LU Linfeng; TANG Zhengxia; SHEN Jiancang

    2015-01-01

    Boron-doped hydrogenated microcrystalline Germanium (μc-Ge:H)fi lms were deposited by hot-wire CVD. H2 diluted GeH4 and B2H6 were used as precursors and the substrate temperature was kept at 300ć. The properties of the samples were analyzed by XRD, Raman spectroscopy, Fourier transform infrared spectrometer and Hall Effect measurement with Van der Pauw method. It is found that thefi lms are partially crystallized, with crystalline fractions larger than 45% and grain sizes smaller than 50 nm. The B-doping can enhance the crystallization but reduce the grain sizes, and also enhance the preferential growth of Ge (220). The conductivity of thefi lms increases and tends to be saturated with increasingdiborane-to-germane ratio . All the Hall mobilities of the samples are larger than 3.8 cm2·V-1·s-1. A high conductivity of 41.3Ω-1ίcm-1 is gained at=6.7%.

  7. Preparation and characterization of boron-doped titania nano-materials with antibacterial activity

    Science.gov (United States)

    Xue, Xiangxin; Wang, Yuzheng; Yang, He

    2013-01-01

    Boron-doped TiO2 (B/TiO2) nano-materials were synthesized by a sol-gel method and characterized by X-ray diffraction pattern (XRD), transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectrum (FT-IR) and UV-vis diffuse reflectance spectra (DRS). With the test of bacterial inhibition zone, the antibacterial properties of B/TiO2 nano-materials on Escherichia coli were investigated. The results show that the structure of TiO2 could be transformed from amorphous to anatase and then to rutile by increasing calcination temperature; part of the boron atoms probably have been weaved into the interstitial TiO2 structure or incorporated into the TiO2 lattice through occupying O sites, whereas others exist as B2O3. The results of antibacterial experiment under visible light irradiation show that the B/TiO2 nano-materials exhibit enhanced antibacterial efficiency compared with non-doped TiO2. Ultimately, the action mechanism of B/TiO2 doping is discussed.

  8. Boron-doped few-walled carbon nanotubes: novel synthesis and properties

    Science.gov (United States)

    Preston, Colin; Song, Da; Taillon, Josh; Cumings, John; Hu, Liangbing

    2016-11-01

    Few-walled carbon nanotubes offer a unique marriage of graphitic quality and robustness to ink-processing; however, doping procedures that may alter the band structure of these few-walled nanotubes are still lacking. This report introduces a novel solution-injected chemical vapor deposition growth process to fabricate the first boron-doped few-walled carbon nanotubes (B-FWNTs) reported in literature, which may have extensive applications in battery devices. A comprehensive characterization of the as-grown B-FWNTs confirms successful boron substitution in the graphitic lattice, and reveals varying growth parameters impact the structural properties of B-FWNT yield. An investigation into the optimal growth purification parameters and ink-making procedures was also conducted. This study introduces the first process technique to successfully grow intrinsically p-doped FWNTs, and provides the first investigation into the impact factors of the growth parameters, purification steps, and ink-making processes on the structural properties of the B-FWNTs and the electrical properties of the resulting spray-coated thin-film electrodes.

  9. Dibenzothiophene adsorption at boron doped carbon nanoribbons studied within density functional theory

    Energy Technology Data Exchange (ETDEWEB)

    López-Albarrán, P. [Facultad de Ingeniería en Tecnología de la Madera, Universidad Michoacana de San Nicolás de Hidalgo, Santiago Tapia 403, CP 58000, Morelia, Michoacán (Mexico); Navarro-Santos, P., E-mail: pnavarrosa@conacyt.mx [Instituto de Investigaciones Químico-Biológicas, Universidad Michoacana de San Nicolás de Hidalgo, Santiago Tapia 403, CP 58000, Morelia, Michoacán (Mexico); Garcia-Ramirez, M. A. [Research Centre for Innovation in Aeronautical Engineering, Universidad Autónoma de Nuevo León, Ciudad Universitaria, San Nicolás de los Garza, CP 66451 Nuevo León (Mexico); Ricardo-Chávez, J. L. [Instituto Potosino de Investigación Científica y Tecnológica, Camino a la Presa San José 2055, Lomas 4" asección, CP 78216, San Luis Potosí, S. L. P. (Mexico)

    2015-06-21

    The adsorption of dibenzothiophene (DBT) on bare and boron-doped armchair carbon nanoribbons (ACNRs) is being investigated in the framework of the density functional theory by implementing periodic boundary conditions that include corrections from dispersion interactions. The reactivity of the ACNRs is characterized by using the Fukui functions as well as the electrostatic potential as local descriptors. Non-covalent adsorption mechanism is found when using the local Perdew-Becke-Ernzerhof functional, regardless of the DBT orientation and adsorption location. The dispersion interactions addition is a milestone to describe the adsorption process. The charge defects introduced in small number (i.e., by doping with B atoms), within the ACNRs increases the selectivity towards sulfur mainly due to the charge depletion at B sites. The DBT magnitude in the adsorption energy shows non-covalent interactions. As a consequence, the configurations where the DBT is adsorbed on a BC{sub 3} island increase the adsorption energy compared to random B arrangements. The stability of these configurations can be explained satisfactorily in terms of dipole interactions. Nevertheless, from the charge-density difference analysis and the weak Bader charge-distribution interactions cannot be ruled out completely. This is why the electronic properties of the ribbons are analyzed in order to elucidate the key role played by the B and DBT states in the adsorbed configurations.

  10. Synthesis and Antimicrobial Activity of Boron-doped Titania Nano-materials

    Institute of Scientific and Technical Information of China (English)

    王昱征; 薛向欣; 杨合

    2014-01-01

    Antibacterial activity of boron-doped TiO2 (B/TiO2) nano-materials under visible light irradiation and in the dark was investigated. A simple sol-gel method was used to synthesize TiO2 nano-materials. X-ray diffraction pattern of B/TiO2 nano-materials represents the diffraction peaks relating to the crystal planes of TiO2 (anatase and rutile). X-ray photoelectron spectroscopy result shows that part of boron ions incorporates into TiO2 lattice to form a possible chemical environment like Ti-O-B and the rest exist in the form of B2O3. The study on antibacterial effect of B/TiO2 nano-materials on fungal Candida albicans (ATCC10231), Gram-negative Escherichia coli (ATCC25922) and Gram-positive Staphylococcus aureus (ATCC6538) shows that the antibacterial action is more significant on Candida albicans than on Escherichia coli and Staphylococcus aureus. Under visible light irradiation, the antibacterial activity is superior to that in the dark.

  11. Effect of substrate temperature on the growth and properties of boron-doped microcrystalline silicon films

    Institute of Scientific and Technical Information of China (English)

    Lei Qing-Song; Wu Zhi-Meng; Geng Xin-Hua; Zhao Ying; Sun Jian; Xi Jian-Ping

    2006-01-01

    Highly conductive boron-doped hydrogenated microcrystalline silicon (μc-Si:H) films are prepared by very high frequency plasma enhanced chemical vapour deposition (VHF PECVD) at the substrate temperatures (Ts) ranging from 90℃ to 270℃. The effects of Ts on the growth and properties of the films are investigated. Results indicate that the growth rate, the electrical (dark conductivity, carrier concentration and Hall mobility) and structural (crystallinity and grain size) properties are all strongly dependent on Ts. As Ts increases, it is observed that 1) the growth rate initially increases and then arrives at a maximum value of 13.3 nm/min at Ts=210℃, 2) the crystalline volume fraction (Xc) and the grain size increase initially, then reach their maximum values at Ts = 140℃, and finally decrease, 3) the dark conductivity (σd),carrier concentration and Hall mobility have a similar dependence on Tg and arrive at their maximum values at Ts=190℃. In addition, it is also observed that at a lower substrate temperature Ts, a higher dopant concentration is required in order to obtain a maximum σd.

  12. Modeling the Microstructure Curvature of Boron-Doped Silicon in Bulk Micromachined Accelerometer

    Directory of Open Access Journals (Sweden)

    Xiaoping He

    2013-01-01

    Full Text Available Microstructure curvature, or buckling, is observed in the micromachining of silicon sensors because of the doping of impurities for realizing certain electrical and mechanical processes. This behavior can be a key source of error in inertial sensors. Therefore, identifying the factors that influence the buckling value is important in designing MEMS devices. In this study, the curvature in the proof mass of an accelerometer is modeled as a multilayered solid model. Modeling is performed according to the characteristics of the solid diffusion mechanism in the bulk-dissolved wafer process (BDWP based on the self-stopped etch technique. Moreover, the proposed multilayered solid model is established as an equivalent composite structure formed by a group of thin layers that are glued together. Each layer has a different Young’s modulus value and each undergoes different volume shrinkage strain owing to boron doping in silicon. Observations of five groups of proof mass blocks of accelerometers suggest that the theoretical model is effective in determining the buckling value of a fabricated structure.

  13. Structural modification of boron-doped ZnO layers caused by hydrogen outgassing

    Science.gov (United States)

    Lovics, R.; Csik, A.; Takáts, V.; Hakl, J.; Vad, K.

    2015-07-01

    Results of annealing experiments of boron-doped zinc oxide (ZnO:B) layers prepared by low pressure chemical vapor deposition method on polished Si, soda-lime glass for windows, and AF45 Schott alkali free thin glass substrates are presented. It is shown that short annealing of samples at 150 °C and 300 °C in air causes serious surface degradation of samples prepared on Si and soda-lime glass substrate. The characteristic feature of degradation is the creation of bubbles and craters on the sample surface which fully destroy the continuity of zinc oxide layers. The results of depth distribution mapping of elements indicate that the formation of bubbles is linked to increase in hydrogen concentration in the layer. The surface degradation was not noticed on samples deposited on AF45 Schott alkali free thin glass which has a SiO2 diffusion barrier layer on the surface, only much fewer and smaller bubbles were visible. The results indicate the important role of hydrogen outgassing from the substrate induced by a thermal shock.

  14. Structural modification of boron-doped ZnO layers caused by hydrogen outgassing

    Energy Technology Data Exchange (ETDEWEB)

    Lovics, R.; Csik, A., E-mail: csik@atomki.hu; Takáts, V.; Hakl, J.; Vad, K.

    2015-07-01

    Results of annealing experiments of boron-doped zinc oxide (ZnO:B) layers prepared by low pressure chemical vapor deposition method on polished Si, soda-lime glass for windows, and AF45 Schott alkali free thin glass substrates are presented. It is shown that short annealing of samples at 150 °C and 300 °C in air causes serious surface degradation of samples prepared on Si and soda-lime glass substrate. The characteristic feature of degradation is the creation of bubbles and craters on the sample surface which fully destroy the continuity of zinc oxide layers. The results of depth distribution mapping of elements indicate that the formation of bubbles is linked to increase in hydrogen concentration in the layer. The surface degradation was not noticed on samples deposited on AF45 Schott alkali free thin glass which has a SiO{sub 2} diffusion barrier layer on the surface, only much fewer and smaller bubbles were visible. The results indicate the important role of hydrogen outgassing from the substrate induced by a thermal shock.

  15. Low-level boron doping and light-induced effects in amorphous silicon pin solar cells

    Science.gov (United States)

    Moeller, M.; Rauscher, B.; Kruehler, W.; Plaettner, R.; Pfleiderer, H.

    Amorphous silicon solar cells with the structure pin/ITO produced in the laboratory show an AM1 efficiency of up to 7.4 percent on 6 sq mm. The impact of doping the i-layer slightly with boron on the cell performance was studied together with its possible influence on the cell stability. Cells exposed to continuous AM1 illumination (up to 2000 hours) show a degradation of the efficiency. Differences in the bias-voltage during the deposition lead to significant differences in the stability whereas the influence of boron doping was not so prominent. The nu-tau-products for electrons and holes were shown to degrade differently through light-soaking for different doping-level. A further investigation was made by evaluating the frequency dependence of the capacitance via a new p i n junction model to obtain the density of states and the drift field in the i-layer for doping and light-soaking.

  16. Elaboration and characterization of boron doping during SiC growth by VLS mechanism

    Science.gov (United States)

    Soueidan, Maher; Ferro, Gabriel; Nsouli, Bilal; Roumié, Mohamad; Habka, Nada; Souliere, Véronique; Bluet, Jean-Marie; Kazan, Michel

    2011-07-01

    VLS mechanism was used for growing boron doped homoepitaxial SiC layers on 4H-SiC(0 0 0 1) 8° off substrate. Si-based melts were fed by propane in the temperature range 1450-1500 °C. Two main approaches were studied to incorporate boron during growth: (1) adding elemental B in the initial melt, with two different compositions: Si 90B 10 and Si 27Ge 68B 5; the growth was performed at 1500 °C; (2) adding B 2H 6 to the gas phase during growth with a melt composition of Si 25Ge 75; the growth was performed at 1450 °C. In most cases, the growth time was limited by liquid loss. The longest growth duration (1 h) was obtained when adding B 2H 6 to the gas phase. In the case of Si 90B 10 melt, the surface morphology exhibits large and parallel terraces whereas the step front is more undulated when adding Ge. Raman and photoluminescence characterizations performed on these layers confirmed the 4H polytype of the layers in addition to the presence of B, which results in a strong B-N donor-acceptor band. The thickness and the growth rate were determined by micro-Infrared spectroscopy. Particle Induced γ-ray Emission (PIGE) was tentatively used to detect B incorporation inside the grown layers. These results were compared to SIMS measurements from which B concentration was found to vary from 10 18 to 10 19 at cm -3.

  17. Preparation and characterization of boron-doped titania nano-materials with antibacterial activity

    Energy Technology Data Exchange (ETDEWEB)

    Xue Xiangxin [Institute of Metallurgical Resources and Environmental Engineering, Northeastern University, Shenyang 110819 (China); Liaoning Key Laboratory of Metallurgical Resources Recycling Science, Shenyang 110819 (China); Liaoning Engineering and Technology Research Center of Boron Resources Comprehensive Utilization, Shenyang 110819 (China); Liaoning Provincial Universities Key Laboratory of Boron Resources Ecological Utilization Technology and Boron Materials, Shenyang 110819 (China); Wang Yuzheng, E-mail: zheng_wangyu@qq.com [Institute of Metallurgical Resources and Environmental Engineering, Northeastern University, Shenyang 110819 (China); Liaoning Key Laboratory of Metallurgical Resources Recycling Science, Shenyang 110819 (China); Liaoning Engineering and Technology Research Center of Boron Resources Comprehensive Utilization, Shenyang 110819 (China); Liaoning Provincial Universities Key Laboratory of Boron Resources Ecological Utilization Technology and Boron Materials, Shenyang 110819 (China); Yang He [Institute of Metallurgical Resources and Environmental Engineering, Northeastern University, Shenyang 110819 (China); Liaoning Key Laboratory of Metallurgical Resources Recycling Science, Shenyang 110819 (China); Liaoning Engineering and Technology Research Center of Boron Resources Comprehensive Utilization, Shenyang 110819 (China); Liaoning Provincial Universities Key Laboratory of Boron Resources Ecological Utilization Technology and Boron Materials, Shenyang 110819 (China)

    2013-01-01

    Highlights: Black-Right-Pointing-Pointer B/TiO{sub 2} nano-materials are prepared and doping improves particles agglomeration. Black-Right-Pointing-Pointer Absorption spectrum move to visible light after doped. Black-Right-Pointing-Pointer B/TiO{sub 2} nano-materials firstly applied to the fields of antibacterial materials. Black-Right-Pointing-Pointer Calcined at high temperature of 900 Degree-Sign C, B/TiO{sub 2} has still strong antibacterial. - Abstract: Boron-doped TiO{sub 2} (B/TiO{sub 2}) nano-materials were synthesized by a sol-gel method and characterized by X-ray diffraction pattern (XRD), transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectrum (FT-IR) and UV-vis diffuse reflectance spectra (DRS). With the test of bacterial inhibition zone, the antibacterial properties of B/TiO{sub 2} nano-materials on Escherichia coli were investigated. The results show that the structure of TiO{sub 2} could be transformed from amorphous to anatase and then to rutile by increasing calcination temperature; part of the boron atoms probably have been weaved into the interstitial TiO{sub 2} structure or incorporated into the TiO{sub 2} lattice through occupying O sites, whereas others exist as B{sub 2}O{sub 3}. The results of antibacterial experiment under visible light irradiation show that the B/TiO{sub 2} nano-materials exhibit enhanced antibacterial efficiency compared with non-doped TiO{sub 2}. Ultimately, the action mechanism of B/TiO{sub 2} doping is discussed.

  18. Boron doped nanostructure ZnO films deposited by ultrasonic spray pyrolysis

    Science.gov (United States)

    Karakaya, Seniye; Ozbas, Omer

    2015-02-01

    ZnO is an II-VI compound semiconductor with a wide direct band gap of 3.3 eV at room temperature. Doped with group III elements (B, Al or Ga), it becomes an attractive candidate to replace tin oxide (SnO2) or indium tin oxide (ITO) as transparent conducting electrodes in solar cell devices and flat panel display due to competitive electrical and optical properties. In this work, ZnO and boron doped ZnO (ZnO:B) films have been deposited onto glass substrates at 350 ± 5 °C by a cost-efficient ultrasonic spray pyrolysis technique. The optical, structural, morphological and electrical properties of nanostructure undoped and ZnO:B films have been investigated. Electrical resistivity of films has been analyzed by four-probe technique. Optical properties and thicknesses of the films have been examined in the wavelength range 1200-1600 nm by using spectroscopic ellipsometry (SE) measurements. The optical constants (refractive index (n) and extinction coefficient (k)) and the thicknesses of the films have been fitted according to Cauchy model. The optical method has been used to determine the band gap value of the films. Transmission spectra have been taken by UV spectrophotometer. It is found that both ZnO and ZnO:B films have high average optical transmission (≥80%). X-ray diffraction (XRD) patterns indicate that the obtained ZnO has a hexagonal wurtzite type structure. The morphological properties of the films were studied by atomic force microscopy (AFM). The surface morphology of the nanostructure films is found to depend on the concentration of B. As a result, ZnO:B films are promising contender for their potential use as transparent window layer and electrodes in solar cells.

  19. Effect of Boron-Doping on the Graphene Aerogel Used as Cathode for the Lithium-Sulfur Battery.

    Science.gov (United States)

    Xie, Yang; Meng, Zhen; Cai, Tingwei; Han, Wei-Qiang

    2015-11-18

    A porous interconnected 3D boron-doped graphene aerogel (BGA) was prepared via a one-pot hydrothermal treatment. The BGA material was first loaded with sulfur to serve as cathode in lithium-sulfur batteries. Boron was positively polarized on the graphene framework, allowing for chemical adsorption of negative polysufide species. Compared with nitrogen-doped and undoped graphene aerogel, the BGA-S cathode could deliver a higher capacity of 994 mA h g(-1) at 0.2 C after 100 cycles, as well as an outstanding rate capability, which indicated the BGA was an ideal cathode material for lithium-sulfur batteries.

  20. Interstitial Boron-Doped TiO2 Thin Films: The Significant Effect of Boron on TiO2 Coatings Grown by Atmospheric Pressure Chemical Vapor Deposition.

    Science.gov (United States)

    Quesada-González, Miguel; Boscher, Nicolas D; Carmalt, Claire J; Parkin, Ivan P

    2016-09-28

    The work presented here describes the preparation of transparent interstitial boron-doped TiO2 thin-films by atmospheric pressure chemical vapor deposition (APCVD). The interstitial boron-doping, on TiO2, proved by X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD), is shown to enhance the crystallinity and significantly improve the photocatalytic activity of the TiO2 films. The synthesis, highly suitable for a reel-to-reel process, has been carried out in one step.

  1. Boron-doped graphene quantum dots for selective glucose sensing based on the "abnormal" aggregation-induced photoluminescence enhancement.

    Science.gov (United States)

    Zhang, Li; Zhang, Zhi-Yi; Liang, Ru-Ping; Li, Ya-Hua; Qiu, Jian-Ding

    2014-05-06

    A hydrothermal approach for the cutting of boron-doped graphene (BG) into boron-doped graphene quantum dots (BGQDs) has been proposed. Various characterizations reveal that the boron atoms have been successfully doped into graphene structures with the atomic percentage of 3.45%. The generation of boronic acid groups on the BGQDs surfaces facilitates their application as a new photoluminescence (PL) probe for label free glucose sensing. It is postulated that the reaction of the two cis-diol units in glucose with the two boronic acid groups on the BGQDs surfaces creates structurally rigid BGQDs-glucose aggregates, restricting the intramolecular rotations and thus resulting in a great boost in the PL intensity. The present unusual "aggregation-induced PL increasing" sensing process excludes any saccharide with only one cis-diol unit, as manifested by the high specificity of BGQDs for glucose over its close isomeric cousins fructose, galactose, and mannose. It is believed that the doping of boron can introduce the GQDs to a new kind of surface state and offer great scientific insights to the PL enhancement mechanism with treatment of glucose.

  2. Boron-Doped Anatase TiO2 as a High-Performance Anode Material for Sodium-Ion Batteries.

    Science.gov (United States)

    Wang, Baofeng; Zhao, Fei; Du, Guodong; Porter, Spencer; Liu, Yong; Zhang, Peng; Cheng, Zhenxiang; Liu, Hua Kun; Huang, Zhenguo

    2016-06-29

    Pristine and boron-doped anatase TiO2 were prepared via a facile sol-gel method and the hydrothermal method for application as anode materials in sodium-ion batteries (SIBs). The sol-gel method leads to agglomerated TiO2, whereas the hydrothermal method is conducive to the formation of highly crystalline and discrete nanoparticles. The structure, morphology, and electrochemical properties were studied. The crystal size of TiO2 with boron doping is smaller than that of the nondoped crystals, which indicates that the addition of boron can inhibit the crystal growth. The electrochemical measurements demonstrated that the reversible capacity of the B-doped TiO2 is higher than that for the pristine sample. B-doping also effectively enhances the rate performance. The capacity of the B-doped TiO2 could reach 150 mAh/g at the high current rate of 2C and the capacity decay is only about 8 mAh/g over 400 cycles. The remarkable performance could be attributed to the lattice expansion resulting from B doping and the shortened Li(+) diffusion distance due to the nanosize. These results indicate that B-doped TiO2 can be a good candidate for SIBs.

  3. Fabrication and characterization of an all-diamond tubular flow microelectrode for electroanalysis.

    Science.gov (United States)

    Hutton, Laura A; Vidotti, Marcio; Iacobini, James G; Kelly, Chris; Newton, Mark E; Unwin, Patrick R; Macpherson, Julie V

    2011-07-15

    The development of the first all-diamond hydrodynamic flow device for electroanalytical applications is described. Here alternate layers of intrinsic (insulating), conducting (heavily boron doped), and intrinsic polycrystalline diamond are grown to create a sandwich structure. By laser cutting a hole through the material, it is possible to produce a tubular flow ring electrode of a characteristic length defined by the thickness of the conducting layer (for these studies ∼90 μm). The inside of the tube can be polished to 17 ± 10 nm surface roughness using a diamond impregnanted wire resulting in a coplanar, smooth, all-diamond surface. The steady-state limiting current versus volume flow rate characteristics for the one electron oxidation of FcTMA(+) are in agreement with those expected for laminar flow in a tubular electrode geometry. For dopamine detection, it is shown that the combination of the reduced fouling properties of boron doped diamond, coupled with the flow geometry design where the products of electrolysis are washed away downstream of the electrode, completely eradicates fouling during electrolysis. This paves the way for incorporation of this flow design into online electroanalytical detection systems. Finally, the all diamond tubular flow electrode system described here provides a platform for future developments including the development of ultrathin ring electrodes, multiple apertures for increased current response, and multiple, individually addressable ring electrodes incorporated into the same flow tube.

  4. Influence of surface properties on the quantum photoyield of diamond photocathodes

    Energy Technology Data Exchange (ETDEWEB)

    Foord, J.S.; Wang, J.; Lau, C.H.; Hiramatsu, M.; Vickers, J. [Oxford Univ. (United Kingdom). Physical and Theoretical Chemistry Lab.; Jackman, R.B. [University Coll., London (United Kingdom). Dept. of Electrical and Electronic Engineering

    2001-07-23

    The quantum efficiency and chemical stability of CVD diamond photocathodes has been examined. As-grown or microwave plasma hydrogenated boron-doped diamond films display a quantum photoyield of approximately 0.05% at 190 nm, which degrades gradually as the material is left in ambient atmosphere, due to slow oxidation. Rapid degradation in performance occurs when exposed to atomic or electronically excited oxygen. X-ray photoelectron spectroscopy shows that the yield drops close to zero at around monolayer oxygen coverage, and that the main oxygen species on the surface is hydroxyl or isolated ether linkages. (orig.)

  5. Rhenium Alloys as Ductile Substrates for Diamond Thin-Film Electrodes.

    Science.gov (United States)

    Halpern, Jeffrey M; Martin, Heidi B

    2014-02-01

    Molybdenum-rhenium (Mo/Re) and tungsten-rhenium (W/Re) alloys were investigated as substrates for thin-film, polycrystalline boron-doped diamond electrodes. Traditional, carbide-forming metal substrates adhere strongly to diamond but lose their ductility during exposure to the high-temperature (1000°C) diamond, chemical vapor deposition environment. Boron-doped semi-metallic diamond was selectively deposited for up to 20 hours on one end of Mo/Re (47.5/52.5 wt.%) and W/Re (75/25 wt.%) alloy wires. Conformal diamond films on the alloys displayed grain sizes and Raman signatures similar to films grown on tungsten; in all cases, the morphology and Raman spectra were consistent with well-faceted, microcrystalline diamond with minimal sp(2) carbon content. Cyclic voltammograms of dopamine in phosphate-buffered saline (PBS) showed the wide window and low baseline current of high-quality diamond electrodes. In addition, the films showed consistently well-defined, dopamine electrochemical redox activity. The Mo/Re substrate regions that were uncoated but still exposed to the diamond-growth environment remained substantially more flexible than tungsten in a bend-to-fracture rotation test, bending to the test maximum of 90° and not fracturing. The W/Re substrates fractured after a 27° bend, and the tungsten fractured after a 21° bend. Brittle, transgranular cleavage fracture surfaces were observed for tungsten and W/Re. A tension-induced fracture of the Mo/Re after the prior bend test showed a dimple fracture with a visible ductile core. Overall, the Mo/Re and W/Re alloys were suitable substrates for diamond growth. The Mo/Re alloy remained significantly more ductile than traditional tungsten substrates after diamond growth, and thus may be an attractive metal substrate for more ductile, thin-film diamond electrodes.

  6. The n-type conduction and microstructural properties of phosphorus ion implanted nanocrystalline diamond films%磷离子注入纳米金刚石薄膜的n型导电性能与微结构研究

    Institute of Scientific and Technical Information of China (English)

    胡晓君; 胡衡; 陈小虎; 许贝

    2011-01-01

    Phosphorus ions are implanted into nanocrystalline diamond ( NCD) films followed by being annealed at different temperatures. The results show that the samples exhibit good n-type conductivity when annealing temperature is increased to 800 ℃ and above. Raman spectroscopy and electron paramagnetic resonance measurements display that the sample with a larger quantity of diamond phase with better lattice perfection has a lower resistivity. It is indicated that nano-sized diamond grains make contributions to the n-type conductivity in the films. After 1000 ℃ annealing, the amorphous carbon grain boundaries become more ordered, which leads the dangling carbon bonds to decrease and the resistivity of the film to increases. It is revealed that the amorphous carbon grain boundaries supply a conduction path to the n-type phosphorus ion implanted nanocrystalline diamond grains.%系统研究了磷离子注入并在不同温度退火后的纳米金刚石薄膜的微结构和电学性能.研究表明,当退火温度达到800℃以上时,薄膜呈良好的n型电导.Raman光谱和电子顺磁共振谱的结果表明,薄膜中金刚石相含量越高和完整性越好,薄膜电阻率越低.这说明纳米金刚石晶粒为薄膜提供了电导.1000℃退火后,薄膜晶界中的非晶石墨相有序度提高,碳悬键数量降低,薄膜电阻率升高.薄膜导电机理为磷离子注入的纳米金刚石晶粒提供了n型电导,非晶碳晶界为其电导提供了传输路径.

  7. Boron concentration profiling by high angle annular dark field-scanning transmission electron microscopy in homoepitaxial δ-doped diamond layers

    Energy Technology Data Exchange (ETDEWEB)

    Araújo, D.; Alegre, M. P.; Piñero, J. C. [Dpto Ciencia de los Materiales, Facultad de Ciencias, Universidad de Cádiz, 11510 Puerto Real (Cádiz) (Spain); Fiori, A.; Bustarret, E. [Institut Néel, CNRS-Université Joseph Fourier, 25 av. des Martyrs, 38042 Grenoble (France); Jomard, F. [Groupe d' Etude de la Matière Condensée (GEMaC), UMR 8635 du CNRS, UVSQ, 45 av. des Etats-Unis, 78035 Versailles Cedex (France)

    2013-07-22

    To develop further diamond related devices, the concentration and spatial location of dopants should be controlled down to the nanometer scale. Scanning transmission electron microscopy using the high angle annular dark field mode is shown to be sensitive to boron doping in diamond epilayers. An analytical procedure is described, whereby local boron concentrations above 10{sup 20} cm{sup −3} were quantitatively derived down to nanometer resolution from the signal dependence on thickness and boron content. Experimental boron local doping profiles measured on diamond p{sup −}/p{sup ++}/p{sup −} multilayers are compared to macroscopic profiles obtained by secondary ion mass spectrometry, avoiding reported artefacts.

  8. Synthesis and characterization of boron-doped NiO thin films pro-duced by spray pyrolysis

    Institute of Scientific and Technical Information of China (English)

    U Alver; H Yaykasl; S Kerli; A Tanrverdi

    2013-01-01

    Boron-doped NiO thin films were prepared on glass substrates at 400◦C by airbrush spraying method using a solution of nickel nitrate hexahydrate. Their physical properties were investigated as a function of dopant concentration. From X-ray diff raction patterns, it is observed that the films have cubic structure with lattice parameters varying with boron concentration. The morphologies of the films were examined by using scanning electron microscopy, and the grain sizes were measured to be around 30-50 nm. Optical measurements show that the band gap energies of the films first decrease then increase with increasing boron concentration. The resistivities of the films were determined by four point probe method, and the changes in resistivity with boron concentration were investigated.

  9. Solar cells on low-resistivity boron-doped Czochralski-grown silicon with stabilized efficiencies of 20%

    Science.gov (United States)

    Lim, Bianca; Hermann, Sonja; Bothe, Karsten; Schmidt, Jan; Brendel, Rolf

    2008-10-01

    Recently, it was shown that the boron-oxygen complex responsible for the light-induced lifetime degradation in oxygen-rich boron-doped silicon can be permanently deactivated by illumination at elevated temperatures. Since the degradation is particularly harmful in low-resistivity Czochralski silicon (Cz-Si), we apply the deactivation procedure to a high-efficiency rear interdigitated single evaporation emitter wrap-through solar cell made on 1.4Ωcm B-doped Cz-Si. The energy conversion efficiency is thereby increased by more than 1% absolute compared to the degraded state to 20.3% on a designated area of 92cm2 and is furthermore shown to be stable under illumination at room temperature.

  10. Science Letters:Development of supported boron-doping TiO2 catalysts by chemical vapor deposition

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    In this study, supported nonmetal (boron) doping TiO2 coating photocatalysts were prepared by chemical vapor deposition (CVD) to enhance the activity under visible light irradiation and avoid the recovering of TiO2. Boron atoms were successfully doped into the lattice of TiO2 through CVD, as evidenced from XPS analysis. B-doped TiO2 coating catalysts showed drastic and strong absorption in the visible light range with a red shift in the band gap transition. This novel B-TiO2 coating photocatalyst showed higher photocatalytic activity in methyl orange degradation under visible light irradiation than that of the pure TiO2 photocatalyst.

  11. All diamond self-aligned thin film transistor

    Science.gov (United States)

    Gerbi, Jennifer

    2008-07-01

    A substantially all diamond transistor with an electrically insulating substrate, an electrically conductive diamond layer on the substrate, and a source and a drain contact on the electrically conductive diamond layer. An electrically insulating diamond layer is in contact with the electrically conductive diamond layer, and a gate contact is on the electrically insulating diamond layer. The diamond layers may be homoepitaxial, polycrystalline, nanocrystalline or ultrananocrystalline in various combinations.A method of making a substantially all diamond self-aligned gate transistor is disclosed in which seeding and patterning can be avoided or minimized, if desired.

  12. High-rate and ultralong cycle-life LiFePO4 nanocrystals coated by boron-doped carbon as positive electrode for lithium-ion batteries

    Science.gov (United States)

    Feng, Jinpeng; Wang, Youlan

    2016-12-01

    An evolutionary modification approach, boron-doped carbon coating, has been used to improve the electrochemical performances of positive electrodes for lithium-ion batteries, and demonstrates apparent and significant modification effects. In this study, the boron-doped carbon coating is firstly adopted and used to decorate the performance of LiFePO4. The obtained composite exhibits a unique core-shell structure with an average diameter of 140 nm and a 4 nm thick boron-doped carbon shell that uniformly encapsulates the core. Owing to the boron element which could induce high amount of defects in the carbon, the electronic conductivity of LiFePO4 is greatly ameliorated. Thus, the boron-doped composite shows superior rate capability and cycle stability than the undoped sample. For instance, the reversible specific capacity of LiFePO4@B0.4-C can reach 164.1 mAh g-1 at 0.1C, which is approximately 96.5% of the theoretical capacity (170 mAh g-1). Even at high rate of 10C, it still shows a high specific capacity of 126.8 mAh g-1 and can be maintained at 124.5 mAh g-1 after 100 cycles with capacity retention ratio of about 98.2%. This outstanding Li-storage property enable the present design strategy to open up the possibility of fabricating the LiFePO4@B-C composite for high-performance lithium-ion batteries.

  13. Long period gratings and rocking filters written with a CO 2 laser in highly-birefringent boron-doped photonic crystal fibers for sensing applications

    Science.gov (United States)

    Carvalho, J. P.; Anuszkiewicz, A.; Statkiewicz-Barabach, G.; Baptista, J. M.; Frazão, O.; Mergo, P.; Santos, J. L.; Urbanczyk, W.

    2012-02-01

    In this work, we demonstrate the possibility of fabricating short-length long-period gratings and rocking filters in highly birefringent Photonic Crystal Fiber using a CO 2 laser. In our experiments both kinds of gratings were made in the same Boron doped highly birefringent PCF using similar exposure parameters. We also present the sensing capabilities of both fabricated gratings to temperature, strain and hydrostatic pressure by interrogation of the wavelength shifts at different resonances.

  14. Growth and electrical characterisation of {delta}-doped boron layers on (111) diamond surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Edgington, Robert; Jackman, Richard B. [London Centre for Nanotechnology, and Department of Electronic and Electrical Engineering, University College London, 17-19 Gordon Street, London, WC1H 0AH (United Kingdom); Sato, Syunsuke; Ishiyama, Yuichiro; Kawarada, Hiroshi [Department of Electronic and Photonic Systems, Waseda University, Okubo 3-4-1, Shinjuku, Tokyo 169-8555 (Japan); Morris, Richard [Advanced SIMS Projects, Department of Physics, University of Warwick, Coventry CV4 7AL (United Kingdom)

    2012-02-01

    A plasma enhanced chemical vapor deposition protocol for the growth of {delta}-doping of boron in diamond is presented, using the (111) diamond plane as a substrate for diamond growth. AC Hall effect measurements have been performed on oxygen terminated {delta}-layers and desirable sheet carrier densities ({approx}10{sup 13} cm{sup -2}) for field-effect transistor application are reported with mobilities in excess of what would expected for equivalent but thicker heavily boron-doped diamond films. Temperature-dependent impedance spectroscopy and secondary ion mass spectroscopy measurements show that the grown layers have metallic-like electrical properties with high cut-off frequencies and low thermal impedance activation energies with estimated boron concentrations of approximately 10{sup 20} cm{sup -3}.

  15. MnTe semiconductor-sensitized boron-doped TiO2 and ZnO photoelectrodes for solar cell applications.

    Science.gov (United States)

    Tubtimtae, Auttasit; Arthayakul, Khanittha; Teekwang, Bussayanee; Hongsith, Kritsada; Choopun, Supab

    2013-09-01

    We report a new tailoring MnTe semiconductor-sensitized solar cells (MnTe SSCs) using successive ionic layer adsorption and reaction (SILAR) technique. X-ray diffraction and SAED patterns reveal the orthorhombic MnTe and cubic MnTe2 phases were grown on boron-doped TiO2 and ZnO nanoparticles. The diameter of MnTe NPs ranged from 15 to 30nm on both B-doped metal oxide structures. The energy gaps of metal oxide become narrower after boron doping, which have an advantage for enhancing the light absorption from UV to visible region. Also, the energy gap of MnTe NPs on B-doped metal oxide was determined ~1.27-1.30eV. The best power conversion efficiency (η) of 0.033% and 0.030% yielded from B-doped TiO2/MnTe(7) and B-doped ZnO/MnTe(9), respectively. The reduction in power conversion efficiency by 103% and 91% was due to the absence of boron doping into TiO2 and ZnO nanostructures, respectively.

  16. Tailoring of boron-doped MnTe semiconductor-sensitized TiO2 photoelectrodes as near-infrared solar cell devices

    Science.gov (United States)

    Tubtimtae, Auttasit; Hongto, Timakorn; Hongsith, Kritsada; Choopun, Supab

    2014-02-01

    We studied the photovoltaic performance of a new tailoring of boron-doped MnTe semiconductor-sensitized solar cells (B-doped MnTe SSCs). The B-doped MnTe semiconductor was grown on TiO2 using two-stages of the successive ionic layer adsorption and reaction (SILAR) technique as a photoelectrode. The phase of the boron-doped MnTe and MnTe2 semiconductor as sensitizers were characterized with ˜20-50 nm in diameter. The B-doped MnTe(5) exhibited the best efficiency of 0.04%, compared to that of the undoped sample of 0.006%. In addition, the band gaps of 1.30 and 1.26 eV were determined for the undoped and B-doped MnTe NPs, respectively. The change in the band gap after boron doping was performed due to crystal quality improvement and the larger size of the MnTe NPs, leading to a broader absorption of the sensitizer and a noticeable improvement in the photovoltaic performance. This kind of semiconductor and synthesis procedure can be applied for further improvement in a higher efficiency and more stability in SSCs.

  17. Polycrystalline-Diamond MEMS Biosensors Including Neural Microelectrode-Arrays

    Directory of Open Access Journals (Sweden)

    Donna H. Wang

    2011-08-01

    Full Text Available Diamond is a material of interest due to its unique combination of properties, including its chemical inertness and biocompatibility. Polycrystalline diamond (poly-C has been used in experimental biosensors that utilize electrochemical methods and antigen-antibody binding for the detection of biological molecules. Boron-doped poly-C electrodes have been found to be very advantageous for electrochemical applications due to their large potential window, low background current and noise, and low detection limits (as low as 500 fM. The biocompatibility of poly-C is found to be comparable, or superior to, other materials commonly used for implants, such as titanium and 316 stainless steel. We have developed a diamond-based, neural microelectrode-array (MEA, due to the desirability of poly-C as a biosensor. These diamond probes have been used for in vivo electrical recording and in vitro electrochemical detection. Poly-C electrodes have been used for electrical recording of neural activity. In vitro studies indicate that the diamond probe can detect norepinephrine at a 5 nM level. We propose a combination of diamond micro-machining and surface functionalization for manufacturing diamond pathogen-microsensors.

  18. Polycrystalline-Diamond MEMS Biosensors Including Neural Microelectrode-Arrays.

    Science.gov (United States)

    Varney, Michael W; Aslam, Dean M; Janoudi, Abed; Chan, Ho-Yin; Wang, Donna H

    2011-08-15

    Diamond is a material of interest due to its unique combination of properties, including its chemical inertness and biocompatibility. Polycrystalline diamond (poly-C) has been used in experimental biosensors that utilize electrochemical methods and antigen-antibody binding for the detection of biological molecules. Boron-doped poly-C electrodes have been found to be very advantageous for electrochemical applications due to their large potential window, low background current and noise, and low detection limits (as low as 500 fM). The biocompatibility of poly-C is found to be comparable, or superior to, other materials commonly used for implants, such as titanium and 316 stainless steel. We have developed a diamond-based, neural microelectrode-array (MEA), due to the desirability of poly-C as a biosensor. These diamond probes have been used for in vivo electrical recording and in vitro electrochemical detection. Poly-C electrodes have been used for electrical recording of neural activity. In vitro studies indicate that the diamond probe can detect norepinephrine at a 5 nM level. We propose a combination of diamond micro-machining and surface functionalization for manufacturing diamond pathogen-microsensors.

  19. Temperature dependent simulation of diamond depleted Schottky PIN diodes

    Science.gov (United States)

    Hathwar, Raghuraj; Dutta, Maitreya; Koeck, Franz A. M.; Nemanich, Robert J.; Chowdhury, Srabanti; Goodnick, Stephen M.

    2016-06-01

    Diamond is considered as an ideal material for high field and high power devices due to its high breakdown field, high lightly doped carrier mobility, and high thermal conductivity. The modeling and simulation of diamond devices are therefore important to predict the performances of diamond based devices. In this context, we use Silvaco® Atlas, a drift-diffusion based commercial software, to model diamond based power devices. The models used in Atlas were modified to account for both variable range and nearest neighbor hopping transport in the impurity bands associated with high activation energies for boron doped and phosphorus doped diamond. The models were fit to experimentally reported resistivity data over a wide range of doping concentrations and temperatures. We compare to recent data on depleted diamond Schottky PIN diodes demonstrating low turn-on voltages and high reverse breakdown voltages, which could be useful for high power rectifying applications due to the low turn-on voltage enabling high forward current densities. Three dimensional simulations of the depleted Schottky PIN diamond devices were performed and the results are verified with experimental data at different operating temperatures

  20. Fabrication of diamond shells

    Energy Technology Data Exchange (ETDEWEB)

    Hamza, Alex V.; Biener, Juergen; Wild, Christoph; Woerner, Eckhard

    2016-11-01

    A novel method for fabricating diamond shells is introduced. The fabrication of such shells is a multi-step process, which involves diamond chemical vapor deposition on predetermined mandrels followed by polishing, microfabrication of holes, and removal of the mandrel by an etch process. The resultant shells of the present invention can be configured with a surface roughness at the nanometer level (e.g., on the order of down to about 10 nm RMS) on a mm length scale, and exhibit excellent hardness/strength, and good transparency in the both the infra-red and visible. Specifically, a novel process is disclosed herein, which allows coating of spherical substrates with optical-quality diamond films or nanocrystalline diamond films.

  1. Boron-Doped Graphene As Active Electrocatalyst For Oxygen Reduction Reaction At A Fuel-Cell Cathode

    CERN Document Server

    Fazio, Gianluca; Di Valentin, Cristiana

    2016-01-01

    Boron-doped graphene was reported to be the best non-metal doped graphene electrocatalyst for the oxygen reduction reaction (ORR) working at an onset potential of 0.035 V [JACS 136 (2014) 4394]. In the present DFT study, intermediates and transition structures along the possible reaction pathways are determined. Both Langmuir-Hinschelwood and Eley-Rideal mechanisms are discussed. Molecular oxygen binds the positively charged B atom and forms an open shell end-on dioxygen intermediate. The associative path is favoured with respect to the dissociative one. The free energy diagrams along the four-reduction steps are investigated with the methodology by N{\\o}rskov and co. [JPC B 108 (2004) 17886] in both acidic and alkaline conditions. The pH effect on the stability of the intermediates of reduction is analyzed in terms of the Pourbaix diagram. At pH = 14 we compute an onset potential value for the electrochemical ORR of U = 0.05 V, which compares very well with the experimental value in alkaline conditions.

  2. Effects of Calcination Temperature on Preparation of Boron-Doped TiO2 by Sol-Gel Method

    Directory of Open Access Journals (Sweden)

    Wenjie Zhang

    2012-01-01

    Full Text Available Boron-doped TiO2 photocatalyst was prepared by a modified sol-gel method. Being calcinated at temperatures from 300°C to 600°C, all the 3% B-TiO2 samples presented anatase TiO2 phase, and TiO2 crystallite sizes were calculated to be 7.6, 10.3, 13.6, and 27.3 nm, respectively. The samples were composed of irregular particles with rough surfaces in the size range within 3 μm. Ti atoms were in an octahedron skeleton and existed mainly in the form of Ti4+, while the Ti-O-B structure was the main boron existing form in the 3% B-TiO2 sample. When calcination temperature increased from 300°C to 600°C, specific surface area decreased sharply from 205.6 m2/g to 31.8 m2/g. The average pore diameter was 10.53 nm with accumulative pore volume of 0.244 mL/g for the 3% B-TiO2 sample calcinated at 400°C, which performed optimal photocatalytic degradation activity. After 90 min of UV-light irradiation, degradation rate of methyl orange was 96.7% on the optimized photocatalyst.

  3. Use of a Boron Doped Spherical Phantom for the Investigation of Neutron Directional Properties: Comparison Between Experiment and MCNP Simulation

    Energy Technology Data Exchange (ETDEWEB)

    Drake, P.; Kierkegaard, J

    1999-07-01

    A boron doped 19 cm diameter spherical phantom was constructed to give information on the direction of neutrons inside the Ringhals 4 containment. The phantom was made of 40% paraffin and 60% boric acid. 10B contributes 2% of the total phantom weight. The phantom was tested for its angular sensitivity to neutrons. The response was tested with a {sup 252}Cf source and with a Monte Carlo calculation (MCNP) simulating a {sup 252}Cf source. In these investigations the phantom showed a strong directional response. However, there was only a fair correspondence between the experiment and the simulation. The discrepancies are, at least in part, due to the difference in energy and angular response of the dosemeters as compared with the idealised response characteristics in the MCNP calculation. In the MCNP calculation the experimental conditions were not fully simulated. The investigations also showed that the addition of boron to the phantom reduces the leakage of thermalised neutrons from the phantom, and the production of neutron induced photons in the phantom to insignificant levels. (author)

  4. Diamond Ablators for Inertial Confinement Fusion

    Energy Technology Data Exchange (ETDEWEB)

    Biener, J; Mirkarimi, P B; Tringe, J W; Baker, S L; Wang, Y M; Kucheyev, S O; Teslich, N E; Wu, K J; Hamza, A V; Wild, C; Woerner, E; Koidl, P; Bruehne, K; Fecht, H

    2005-06-21

    Diamond has a unique combination of physical properties for the inertial confinement fusion ablator application, such as appropriate optical properties, high atomic density, high yield strength, and high thermal conductivity. Here, we present a feasible concept to fabricate diamond ablator shells. The fabrication of diamond capsules is a multi-step process, which involves diamond chemical vapor deposition on silicon mandrels followed by polishing, microfabrication of holes, and removing of the silicon mandrel by an etch process. We also discuss the pros and cons of coarse-grained optical quality and nanocrystalline chemical vapor deposition diamond films for the ablator application.

  5. Metal/Diamond Composite Thin-Film Electrodes: New Carbon Supported Catalytic Electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Greg M. Swain, PI

    2009-03-10

    The DOE-funded research conducted by the Swain group was focused on (i) understanding structure-function relationships at boron-doped diamond thin-film electrodes, (ii) understanding metal phase formation on diamond thin films and developing electrochemical approaches for producing highly dispersed electrocatalyst particles (e.g., Pt) of small nominal particle size, (iii) studying the electrochemical activity of the electrocatalytic electrodes for hydrogen oxidation and oxygen reduction and (iv) conducting the initial synthesis of high surface area diamond powders and evaluating their electrical and electrochemical properties when mixed with a Teflon binder. (Note: All potentials are reported versus Ag/AgCl (sat'd KCl) and cm{sup 2} refers to the electrode geometric area, unless otherwise stated).

  6. Conductive Boron-Doped Graphene as an Ideal Material for Electrocatalytically Switchable and High-Capacity Hydrogen Storage.

    Science.gov (United States)

    Tan, Xin; Tahini, Hassan A; Smith, Sean C

    2016-12-07

    Electrocatalytic, switchable hydrogen storage promises both tunable kinetics and facile reversibility without the need for specific catalysts. The feasibility of this approach relies on having materials that are easy to synthesize, possessing good electrical conductivities. Graphitic carbon nitride (g-C4N3) has been predicted to display charge-responsive binding with molecular hydrogen-the only such conductive sorbent material that has been discovered to date. As yet, however, this conductive variant of graphitic carbon nitride is not readily synthesized by scalable methods. Here, we examine the possibility of conductive and easily synthesized boron-doped graphene nanosheets (B-doped graphene) as sorbent materials for practical applications of electrocatalytically switchable hydrogen storage. Using first-principle calculations, we find that the adsorption energy of H2 molecules on B-doped graphene can be dramatically enhanced by removing electrons from and thereby positively charging the adsorbent. Thus, by controlling charge injected or depleted from the adsorbent, one can effectively tune the storage/release processes which occur spontaneously without any energy barriers. At full hydrogen coverage, the positively charged BC5 achieves high storage capacities up to 5.3 wt %. Importantly, B-doped graphene, such as BC49, BC7, and BC5, have good electrical conductivity and can be easily synthesized by scalable methods, which positions this class of material as a very good candidate for charge injection/release. These predictions pave the route for practical implementation of electrocatalytic systems with switchable storage/release capacities that offer high capacity for hydrogen storage.

  7. Optical Properties and Boron Doping-Induced Conduction-Type Change in SnO2 Thin Films

    Science.gov (United States)

    Tran, Quang-Phu; Fang, Jau-Shiung; Chin, Tsung-Shune

    2016-01-01

    Boron-doped tin oxide (BTO) films, 0-5 at.% B, were prepared by sol-gel dip coating on a glass substrate. Dried precursor films were post-annealed at a temperature between 400°C and 750°C for 2 h. The obtained BTO thin films were characterized by x-ray diffraction (XRD), scanning electron microscopy (SEM), ultraviolet-visible light (UV-Vis) spectrometry, a four-point probe, and Hall-effect and Seebeck-effect measurements. Optimal optical transmittance was achieved for post-annealed BTO thin film at 700°C. XRD results show a rutile SnO2 structure with a preferred (110) orientation for all the films. The grain size is 47-21 nm, which reduces with increasing B contents. The optical transmittance is 84.6-88.5% at a wavelength of 550 nm and optical band gap of 3.52-3.75 eV. Electrical resistivity is (3.4-8.2) × 10-3 Ω cm, and figure of merit (0.9-4.3) × 10-3 Ω-1. Carrier concentration is (0.97-7.4) × 1020 cm-3 and mobility (2.5-7.8) cm2 V-1 s-1. BTO film with 4 at.% B shows an optimal combination of properties. Conduction type changes from n- (undoped) to p- (1-4 at.% B), then to n-types (5 at.% B), as evidenced from Hall-effect and Seebeck-effect measurements. This is explained by doping-generated defects and phase separations of Sn3O4 and B2O3.

  8. Electrolyzing synthesis of boron-doped graphene quantum dots for fluorescence determination of Fe(3+) ions in water samples.

    Science.gov (United States)

    Chen, Li; Wu, Chuanli; Du, Pan; Feng, Xiaowei; Wu, Ping; Cai, Chenxin

    2017-03-01

    This work reports a facile electrolyzing method to synthesize boron-doped graphene quantum dots (BGQDs) and uses the BGQDs as a fluorescent probe to determine Fe(3+) ion levels in water samples. The BGQDs were produced by oxidizing graphite in an aqueous borax solution at pH 7; then, the borate solution was filtered with BGQDs, and the borate was dialyzed from the filtrate, leaving a solution of BGQDs in water. The amount of the B in the BGQDs can be adjusted by changing the concentration of borax used for the electrolyte. The excitation wavelength- and B amount-dependent fluorescence characteristics of BQGDs were studied. The fluorescence intensity of the BGQDs is measurable in real time, and its quenching is very sensitive to the concentration of Fe(3+) ions in the system but not to other possible coexisting metal ions. The fluorescence quenching mechanism of Fe(3+) ions to BGQDs is studied and explained based on electrochemical voltammetry and DFT simulations. The analytical signal, which is defined as F0/F, where F0 and F are the fluorescence intensities of the BGQDs before and after interaction with Fe(3+) ions, respectively, displays a good linear relationship in the Fe(3+) ion concentration range of 0.01-100µm with a correlation coefficient of 0.999 and a limit of detection (LOD) of ~(0.005±0.001) μM. The LOD value is much lower than the water quality standards for Fe(3+) ions (0.3ppm, ~5.36µm) in drinking water suggested by the WHO (World Health Organization) and EPA (U.S. Environmental Protection Agency), implying that this method has great potential for applications in real sample assays. For example, the determination of the Fe(3+) ion levels in three water samples (tap water, groundwater, and lake water) gives approximately the same results as those determined by the EPA-recommended AAS (atomic adsorption spectroscopy) method.

  9. Biofunctionalization of diamond microelectrodes

    Energy Technology Data Exchange (ETDEWEB)

    Reitinger, Andreas Adam; Lud, Simon Quartus; Stutzmann, Martin; Garrido, Jose Antonio [Walter Schottky Institut, TU Muenchen (Germany); Hutter, Naima Aurelia; Richter, Gerhard; Jordan, Rainer [WACKER-Chair of Macromolecular Chemistry, TU Muenchen (Germany)

    2010-07-01

    In this work we present two main routes for the biofunctionalization of nanocrystalline diamond films, aiming at the application of diamond microelectrodes as amperometric biosensors. We report on direct covalent grafting of biomolecules on nanocrystalline diamond films via diazonium monophenyls and biphenyls as well as other linker molecules, forming self-assembled monolayers on the diamond surface. Monolayers with different functional head groups have been characterized. Patterning of the available functional groups using electron beam-induced chemical lithography allows the selective preparation of well-localized docking sites for the immobilization of biomolecules. Furthermore, polymer brushes are expected to enable novel paths for designing more advanced biosensing schemes, incorporating multifunctional groups and a higher loading capacity for biomolecules. Here, we focus on the preparation of polymer grafts by self-initiated photografting and photopolymerization. Further chemical modification of the grafted polymer brushes results in the introduction of additional functional molecules, paving the way for the incorporation of more complex molecular structures such as proteins. In a comparative study we investigate the advantages and disadvantages of both approaches.

  10. Diamond and Carbon Nanotube Composites for Supercapacitor Devices

    Science.gov (United States)

    Moreira, João Vitor Silva; May, Paul William; Corat, Evaldo José; Peterlevitz, Alfredo Carlos; Pinheiro, Romário Araújo; Zanin, Hudson

    2017-02-01

    We report on the synthesis and electrochemical properties of diamond grown onto vertically aligned carbon nanotubes with high surface areas as a template, resulting in a composite material exhibiting high double-layer capacitance as well as low electrochemical impedance electrodes suitable for applications as supercapacitor devices. We contrast results from devices fabricated with samples which differ in both their initial substrates (Si and Ti) and their final diamond coatings, such as boron-doped diamond and diamond-like carbon (DLC). We present for first time a conducting model for non-doped DLC thin-films. All samples were characterized by scanning and transmission electron microscopy and Fourier transform infrared and Raman spectroscopy. Our results show specific capacitance as high as 8.25 F g-1 (˜1 F cm-2) and gravimetric specific energy and power as high as 0.7 W h kg-1 and 176.4 W kg-1, respectively, which suggest that these diamond/carbon nanotube composite electrodes are excellent candidates for supercapacitor fabrication.

  11. Diamond and Carbon Nanotube Composites for Supercapacitor Devices

    Science.gov (United States)

    Moreira, João Vitor Silva; May, Paul William; Corat, Evaldo José; Peterlevitz, Alfredo Carlos; Pinheiro, Romário Araújo; Zanin, Hudson

    2016-10-01

    We report on the synthesis and electrochemical properties of diamond grown onto vertically aligned carbon nanotubes with high surface areas as a template, resulting in a composite material exhibiting high double-layer capacitance as well as low electrochemical impedance electrodes suitable for applications as supercapacitor devices. We contrast results from devices fabricated with samples which differ in both their initial substrates (Si and Ti) and their final diamond coatings, such as boron-doped diamond and diamond-like carbon (DLC). We present for first time a conducting model for non-doped DLC thin-films. All samples were characterized by scanning and transmission electron microscopy and Fourier transform infrared and Raman spectroscopy. Our results show specific capacitance as high as 8.25 F g-1 (˜1 F cm-2) and gravimetric specific energy and power as high as 0.7 W h kg-1 and 176.4 W kg-1, respectively, which suggest that these diamond/carbon nanotube composite electrodes are excellent candidates for supercapacitor fabrication.

  12. Effect of boron incorporation on the structure and electrical properties of diamond-like carbon films deposited by femtosecond and nanosecond pulsed laser ablation

    Energy Technology Data Exchange (ETDEWEB)

    Sikora, A. [Laboratoire Hubert Curien, UMR 5516 CNRS, Universite Jean Monnet, 18 Rue Pr. Benoit Lauras, 42000 Saint-Etienne (France); Bourgeois, O. [Institut Neel, UPR 2940 CNRS, 25 Avenue des Martyrs, 38042 Grenoble Cedex 9 (France); Sanchez-Lopez, J.C. [Instituto de Ciencia de Materiales de Sevilla, Avda. Americo Vespucio, 49 41092 Sevilla (Spain); Rouzaud, J.-N. [Laboratoire de Geologie, UMR 8538 CNRS, Ecole Normale Superieure, 45 Rue d' Ulm, 75230 Paris Cedex 05 (France); Rojas, T.C. [Instituto de Ciencia de Materiales de Sevilla, Avda. Americo Vespucio, 49 41092 Sevilla (Spain); Loir, A.-S. [Laboratoire Hubert Curien, UMR 5516 CNRS, Universite Jean Monnet, 18 Rue Pr. Benoit Lauras, 42000 Saint-Etienne (France); Garden, J.-L. [Institut Neel, UPR 2940 CNRS, 25 Avenue des Martyrs, 38042 Grenoble Cedex 9 (France); Garrelie, F. [Laboratoire Hubert Curien, UMR 5516 CNRS, Universite Jean Monnet, 18 Rue Pr. Benoit Lauras, 42000 Saint-Etienne (France); Donnet, C., E-mail: christophe.donnet@univ-st-etienne.f [Laboratoire Hubert Curien, UMR 5516 CNRS, Universite Jean Monnet, 18 Rue Pr. Benoit Lauras, 42000 Saint-Etienne (France)

    2009-12-31

    The influence of the incorporation of boron in diamond-like carbon (DLC) films on the microstructure of the coatings has been investigated. The boron-containing DLC films (a-C:B) have been deposited by pulsed laser deposition (PLD) at room temperature in high vacuum conditions, by ablating graphite and boron targets either with a femtosecond pulsed laser (800 nm, 150 fs, fs-DLC) or with a nanosecond pulsed laser (248 nm, 20 ns, ns-DLC). Alternative ablation of the graphite and boron targets has been carried out to deposit the a-C:B films. The film structure and composition have been highlighted by coupling Field Emission Scanning Electron Microscopy, Electron Energy Loss Spectroscopy and High Resolution Transmission Electron Microscopy. Using the B K-edge, EELS characterization reveals the boron effect on the carbon bonding. Moreover, the plasmon energy reveals a tendency of graphitization associated to the boron doping. Pure boron particles have been characterized by HRTEM and reveal that those particles are amorphous or crystallized. The nanostructures of the boron-doped ns-DLC and the boron-doped fs-DLC are thus compared. In particular, the incorporation of boron in the DLC matrix is highlighted, depending on the laser used for deposition. Electrical measurements show that some of these films have potentialities to be used in low temperature thermometry, considering their conductivity and temperature coefficient of resistance (TCR) estimated within the temperature range 160-300 K.

  13. Synergistic effect on the visible light activity of Ti3+ doped TiO2 nanorods/boron doped graphene composite.

    Science.gov (United States)

    Xing, Mingyang; Li, Xiao; Zhang, Jinlong

    2014-06-30

    TiO2/graphene (TiO2-x/GR) composites, which are Ti(3+) self-doped TiO2 nanorods decorated on boron doped graphene sheets, were synthesized via a simple one-step hydrothermal method using low-cost NaBH4 as both a reducing agent and a boron dopant on graphene. The resulting TiO2 nanorods were about 200 nm in length with exposed (100) and (010) facets. The samples were characterized by X-ray diffraction (XRD), UV-visible diffuse reflectance spectroscopy, X-band electron paramagnetic resonance (EPR), X-ray photoelectron spectra (XPS), transmission electron microscope (TEM), Raman, and Fourier-transform infrared spectroscopy (FTIR). The XRD results suggest that the prepared samples have an anatase crystalline structure. All of the composites tested exhibited improved photocatalytic activities as measured by the degradation of methylene blue and phenol under visible light irradiation. This improvement was attributed to the synergistic effect of Ti(3+) self-doping on TiO2 nanorods and boron doping on graphene.

  14. Thin layer of ordered boron-doped TiO2 nanotubes fabricated in a novel type of electrolyte and characterized by remarkably improved photoactivity

    Science.gov (United States)

    Siuzdak, Katarzyna; Szkoda, Mariusz; Lisowska-Oleksiak, Anna; Grochowska, Katarzyna; Karczewski, Jakub; Ryl, Jacek

    2015-12-01

    This paper reports a novel method of boron doped titania nanotube arrays preparation by electrochemical anodization in electrolyte containing boron precursor - boron trifluoride diethyl etherate (BF3 C4H10O), simultaneously acting as an anodizing agent. A pure, ordered TiO2 nanotubes array, as a reference sample, was also prepared in solution containing a standard etching compound: ammonium fluoride. The doped and pure titania were characterized by scanning electron microscopy, UV-vis spectroscopy, Raman spectroscopy, X-ray photoelectron spectroscopy, photoluminescence emission spectroscopy and by means of electrochemical methods. The B-doping decidedly shifts the absorption edge of TiO2 nanotubes towards the visible light region and significantly inhibits the radiative recombination processes. Despite the fact that the doped sample is characterized by 4.6 lower real surface area when compared to pure titania, it leads to the decomposition of methylene blue in 93%, that is over 2.3 times higher than the degradation efficiency exhibited by the undoped material. The formation rate of hydroxyl radicals (rad OH) upon illumination significantly favours boron doped titania as a photocatalytic material. Moreover, the simple doping of TiO2 nanotubes array results in the enhancement of generated photocurrent from 120 μA/cm2 to 350 μA/cm2 registered for undoped and doped electrode, respectively.

  15. Investigation of charges carrier density in phosphorus and boron doped SiN{sub x}:H layers for crystalline silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Paviet-Salomon, B., E-mail: bertrand.paviet-salomon@epfl.ch [Commissariat à l’Énergie Atomique (CEA), Laboratoire d’Innovation pour les Technologies des Énergies Nouvelles et les nanomatériaux (LITEN), Institut National de l’Énergie Solaire - INES, 50 avenue du Lac Léman, 73377 Le Bourget du Lac (France); Gall, S. [Commissariat à l’Énergie Atomique (CEA), Laboratoire d’Innovation pour les Technologies des Énergies Nouvelles et les nanomatériaux (LITEN), Institut National de l’Énergie Solaire - INES, 50 avenue du Lac Léman, 73377 Le Bourget du Lac (France); Slaoui, A. [Institut de l’Électronique du Solide et des Systèmes (InESS), Unité Mixte de Recherche 7163 Centre National de la Recherche Scientifique-Université de Strasbourg (UMR 7163 CNRS-UDS), 23 rue du Loess, BP 20 CR, 67037 Strasbourg (France)

    2013-05-15

    Highlights: ► We investigate the properties of phosphorus and boron-doped silicon nitride films. ► Phosphorus-doped layers yield higher lifetimes than undoped ones. ► The fixed charges density decreases when increasing the films phosphorus content. ► Boron-doped films feature very low lifetimes. ► These doped layers are of particular interest for crystalline silicon solar cells. -- Abstract: Dielectric layers are of major importance in crystalline silicon solar cells processing, especially as anti-reflection coatings and for surface passivation purposes. In this paper we investigate the fixed charge densities (Q{sub fix}) and the effective lifetimes (τ{sub eff}) of phosphorus (P) and boron (B) doped silicon nitride layers deposited by plasma-enhanced chemical vapour deposition. P-doped layers exhibit a higher τ{sub eff} than standard undoped layers. In contrast, B-doped layers exhibit lower τ{sub eff}. A strong Q{sub fix} decrease is to be seen when increasing the P content within the film. Based on numerical simulations we also demonstrate that the passivation obtained with P- and B-doped layers are limited by the interface states rather than by the fixed charges.

  16. Determination of active doping in highly resistive boron doped silicon nanocrystals embedded in SiO{sub 2} by capacitance voltage measurement on inverted metal oxide semiconductor structure

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Tian, E-mail: tianz@student.unsw.edu.au; Puthen-Veettil, Binesh; Wu, Lingfeng; Jia, Xuguang; Lin, Ziyun; Yang, Terry Chien-Jen; Conibeer, Gavin; Perez-Wurfl, Ivan [Australian Centre for Advanced Photovoltaics, UNSW Australia, Kensington, New South Wales 2052 (Australia)

    2015-10-21

    We investigate the Capacitance-Voltage (CV) measurement to study the electrically active boron doping in Si nanocrystals (ncSi) embedded in SiO{sub 2}. The ncSi thin films with high resistivity (200–400 Ω cm) can be measured by using an inverted metal oxide semiconductor (MOS) structure (Al/ncSi (B)/SiO{sub 2}/Si). This device structure eliminates the complications from the effects of lateral current flow and the high sheet resistance in standard lateral MOS structures. The characteristic MOS CV curves observed are consistent with the effective p-type doping. The CV modeling method is presented and used to evaluate the electrically active doping concentration. We find that the highly boron doped ncSi films have electrically active doping of 10{sup 18}–10{sup 19 }cm{sup −3} despite their high resistivity. The saturation of doping at about 1.4 × 10{sup 19 }cm{sup −3} and the low doping efficiency less than 5% are observed and discussed. The calculated effective mobility is in the order of 10{sup −3} cm{sup 2}/V s, indicating strong impurity/defect scattering effect that hinders carriers transport.

  17. Determination of active doping in highly resistive boron doped silicon nanocrystals embedded in SiO2 by capacitance voltage measurement on inverted metal oxide semiconductor structure

    Science.gov (United States)

    Zhang, Tian; Puthen-Veettil, Binesh; Wu, Lingfeng; Jia, Xuguang; Lin, Ziyun; Yang, Terry Chien-Jen; Conibeer, Gavin; Perez-Wurfl, Ivan

    2015-10-01

    We investigate the Capacitance-Voltage (CV) measurement to study the electrically active boron doping in Si nanocrystals (ncSi) embedded in SiO2. The ncSi thin films with high resistivity (200-400 Ω cm) can be measured by using an inverted metal oxide semiconductor (MOS) structure (Al/ncSi (B)/SiO2/Si). This device structure eliminates the complications from the effects of lateral current flow and the high sheet resistance in standard lateral MOS structures. The characteristic MOS CV curves observed are consistent with the effective p-type doping. The CV modeling method is presented and used to evaluate the electrically active doping concentration. We find that the highly boron doped ncSi films have electrically active doping of 1018-1019 cm-3 despite their high resistivity. The saturation of doping at about 1.4 × 1019 cm-3 and the low doping efficiency less than 5% are observed and discussed. The calculated effective mobility is in the order of 10-3 cm2/V s, indicating strong impurity/defect scattering effect that hinders carriers transport.

  18. Effect of CVD-Diamond on the Tribological and Mechanical Performance of Titanium Alloy (Ti6Al4V

    Directory of Open Access Journals (Sweden)

    S.H. Din

    2016-12-01

    Full Text Available Nano-crystalline diamond and microcrystalline diamond films have been separately deposited on chemically treated titanium alloy (Ti6Al4V substrates from methane/hydrogen (CH4/H2 gas mixture, using hot filament chemical vapor deposition technique. The coatings have architecture of Ti6Al4V/NCD and Ti6Al4V/MCD. The as grown nano-crystalline diamond and microcrystalline diamond films were characterized using high resolution scanning electron microscope and Raman’s spectroscopy. The residual stresses along the surface of nano-crystalline diamond coatings and micro-crystalline diamond coatings are compressive in nature as shown by the Raman spectroscopy. Nanoindentation tests were also conducted using Berkovich nanoindenter for the purpose of measurement of hardness and elastic modulus values. The indentation depth for microcrystalline diamond coating was 65 nm, whereas for nanocrystalline diamond coating, it was 72 nm. Microcrystalline diamond and nanocrystalline diamond coatings have yielded the super-hardness of ~55 G Pa and ~38 G Pa respectively. The average coefficient of friction of microcrystalline diamond and nanocrystalline diamond coatings decrease from 0.305-0.27 to 0.068-0.053, respectively, when the load is increased from 1 N to 10 N. However, for conventional Ti6Al4V substrate the average coefficient of friction changes from 0.625 to 0.38 under the same input conditions.

  19. Boron-doped zinc oxide thin films grown by metal organic chemical vapor deposition for bifacial a-Si:H/c-Si heterojunction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Zeng, Xiangbin, E-mail: eexbzeng@mail.hust.edu.cn; Wen, Xixing; Sun, Xiaohu; Liao, Wugang; Wen, Yangyang

    2016-04-30

    Boron-doped zinc oxide (BZO) films were grown by metal organic chemical vapor deposition. The influence of B{sub 2}H{sub 6} flow rate and substrate temperature on the microstructure, optical, and electrical properties of BZO films was investigated by X-ray diffraction spectrum, scanning electron microscope, optical transmittance spectrum, and Hall measurements. The BZO films with optical transmittance above 85% in the visible and infrared light range, resistivity of 0.9–1.0 × 10{sup −3} Ω cm, mobility of 16.5–25.5 cm{sup 2}/Vs, and carrier concentration of 2.2–2.7 × 10{sup 20} cm{sup −3} were deposited under optimized conditions. The optimum BZO films were applied on the bifacial BZO/p-type a-Si:H/i-type a-Si:H/n-type c-Si/i-type a-Si:H/n{sup +}-type a-Si:H/BZO heterojunction solar cell as both front and back transparent electrodes. Meanwhile, the bifacial heterojunction solar cell with indium tin oxide (ITO) as both front and back transparent electrodes was fabricated. The efficiencies of 17.788% (open-circuit voltage: 0.628 V, short-circuit current density: 41.756 mA/cm{sup 2} and fill factor: 0.678) and 16.443% (open-circuit voltage: 0.590 V, short-circuit current density: 36.515 mA/cm{sup 2} and fill factor: 0.762) were obtained on the a-Si/c-Si heterojunction solar cell with BZO and ITO transparent electrodes, respectively. - Highlights: • Boron-doped zinc oxide films with low resistivity were fabricated. • The boron-doped zinc oxide films have the high transmittance. • B-doped ZnO film was applied in a-Si:H/c-Si solar cell as transparent electrodes. • The a-Si:H/c-Si solar cell with efficiency of 17.788% was obtained.

  20. Three-dimensional MgB2-type superconductivity in hole-doped diamond.

    Science.gov (United States)

    Boeri, Lilia; Kortus, Jens; Andersen, O K

    2004-12-01

    We substantiate by numerical and analytical calculations that the recently discovered superconductivity below 4 K in 3% boron-doped diamond is caused by electron-phonon coupling of the same type as in MgB2, albeit in three dimensions. Holes at the top of the zone-centered, degenerate sigma-bonding valence-band couple strongly to the optical bond-stretching modes. The increase from two to three dimensions reduces the mode softening crucial for T(c) reaching 40 K in MgB2. Even if diamond had the same bare coupling constant as MgB2, which could be achieved with 10% doping, T(c) would be only 25 K. Superconductivity above 1 K in Si (Ge) requires hole doping beyond 5% (10%).

  1. Growth mechanisms and defects in boronated CVD diamond as identified by scanning tunneling microscopy

    Science.gov (United States)

    Kreutz, T. J.; Clausing, R. E.; Heatherly, L., Jr.; Warmack, R. J.; Thundat, T.; Feigerle, C. S.; Wandelt, K.

    1995-05-01

    Boron-doped CVD-diamond films were grown in a simple hot filament reactor. A set of samples grown using various methane-in-hydrogen concentrations has been examined by scanning tunneling microscopy in air. On the diamond (111) crystal faces monoatomic steps could be observed giving evidence for layer growth. At low CH4 concentrations the layers form triangular growth spirals. Screw dislocations in the middle of the spirals serve as continuous sources of steps for the layer growth producing (111) faces of high crystal perfection. At higher methane concentrations the crystal perfection declines and the (111) crystal faces exhibit a mosaic structure. The size of the subgrains in the mosaic pattern decreases with increasing CH4 concentration. Nucleation of new layers takes place at the subgrain boundaries. The topography of (001) crystal faces did not significantly change with the methane-in-hydrogen concentration and did not allow the determination of the underlying growth mechanism.

  2. Low-stress doped ultrananocrystalline diamond

    Energy Technology Data Exchange (ETDEWEB)

    Sumant, Anirudha V.; Buja, Federico; van Spengen, Willem Merlijn

    2016-10-25

    Nanocrystalline diamond coatings exhibit stress in nano/micro-electro mechanical systems (MEMS). Doped nanocrstalline diamond coatings exhibit increased stress. A carbide forming metal coating reduces the in-plane stress. In addition, without any metal coating, simply growing UNCD or NCD with thickness in the range of 3-4 micron also reduces in-plane stress significantly. Such coatings can be used in MEMS applications.

  3. Spectroscopic study of low pressure, low temperature H2-CH4-CO2 microwave plasmas used for large area deposition of nanocrystalline diamond films. Part II: on plasma chemical processes

    Science.gov (United States)

    Nave, A. S. C.; Baudrillart, B.; Hamann, S.; Bénédic, F.; Lombardi, G.; Gicquel, A.; van Helden, J. H.; Röpcke, J.

    2016-12-01

    In a distributed antenna array (DAA) reactor, microwave H2 plasmas with admixtures of 2.5% CH4 and 1% CO2 used for the deposition of nanocrystalline diamond films have been studied by infrared laser absorption and optical emission spectroscopy (OES) techniques. The experiments were carried out in order to analyze the dependence of plasma chemical phenomena on power and pressure at relatively low pressures, up to 0.55 mbar, and power values, up to 3 kW. The evolution of the concentration of the methyl radical, CH3, of five stable molecules, CH4, CO2, CO, C2H2 and C2H6, and of vibrationally excited CO in the first and second hot band was monitored in the plasma processes by in situ infrared laser absorption spectroscopy using tunable lead salt diode lasers (TDL) and an external-cavity quantum cascade laser (EC-QCL) as radiation sources. OES was applied simultaneously to obtain complementary information about the degree of dissociation of the H2 precursor and of its gas temperature. The experimental results are presented in two separate parts. In Part I, the first paper in a two-part series, the measurement of the gas (T gas), rotational (T rot) and vibrational (T vib) temperatures of the various species in the complex plasma was the main focus of interest. Depending on the different plasma zones the gas temperature was found to range between about 360 and 1000 K inside the DAA reactor (Nave et al 2016 Plasma Sources Sci. Technol. 25 065002). In Part II, the present paper, taking into account the temperatures determined in the first paper, the concentrations of the various species, which were found to be in a range between 1011 and 1015 cm-3, are the focus of interest. The influence of the discharge parameters power and pressure on the molecular concentrations has been studied. To achieve further insight into general plasma chemical aspects the dissociation of the carbon precursor gases including their fragmentation and conversion to the reaction products has been

  4. Spectroscopic study of low pressure, low temperature H2-CH4-CO2 microwave plasmas used for large area deposition of nanocrystalline diamond films. Part I: on temperature determination and energetic aspects

    Science.gov (United States)

    Nave, A. S. C.; Baudrillart, B.; Hamann, S.; Bénédic, F.; Lombardi, G.; Gicquel, A.; van Helden, J. H.; Röpcke, J.

    2016-12-01

    In a distributed antenna array (DAA) reactor, microwave H2 plasmas with admixtures of 2.5% CH4 and 1% CO2 used for the deposition of nanocrystalline diamond films have been studied by infrared absorption and optical emission spectroscopy (OES) techniques. The experiments were carried out in order to analyze the dependence of plasma chemical phenomena on power and pressure at relatively low pressures, up to 0.55 mbar, and power values, up to 3 kW. The evolution of the concentration of the methyl radical, CH3, and of five stable molecules, CH4, CO2, CO, C2H2 and C2H6, was monitored in the plasma processes by in situ infrared laser absorption spectroscopy using lead salt diode lasers (TDL) and external-cavity quantum cascade lasers (EC-QCL) as radiation sources. OES was applied simultaneously to obtain complementary information about the degree of dissociation of the H2 precursor gas and of its gas temperature. The experimental results are presented in two separate parts. In Part I, the present paper, the measurement of the gas (T gas), rotational (T rot) and vibrational (T vib) temperatures of the various species in the complex plasma was the main focus of interest. To achieve reliable values for the gas temperature inside and outside the plasma bulk as well as for the rotational and vibrational temperatures in the plasma hot zones, which are of great importance for calculation of species concentrations, five different methods based on the emission and absorption spectroscopy data of H2, CH4, CH3 and CO have been used. In these, line profile analysis has been combined with Boltzmann plot methods. Based on the wide tuning range of the EC-QCL, a variety of CO lines in the ground and three excited states was measured enabling extensive temperature analysis providing new insight into the energetic aspects of this multi-component plasma. Depending on the different plasma zones the gas temperature was found to range between about 360 and 1000 K inside the DAA reactor

  5. Fabrication of boron-doped carbon fibers by the decomposition of B4C and its excellent rate performance as an anode material for lithium-ion batteries

    Science.gov (United States)

    Wang, Huiqi; Ma, Canliang; Yang, Xueteng; Han, Tao; Tao, Zechao; Song, Yan; Liu, Zhanjun; Guo, Quangui; Liu, Lang

    2015-03-01

    A facile route, for the first time, was developed to fabricate boron-doped carbon fibers (BDCFs). Boron was doped into mesosphere pitch-based carbon fibers (CFs) by exposing the CFs in a vapor of boron by the decomposition of boron carbide. The microstructure of BDCFs was characterized by SEM, TEM, XRD and Raman spectroscopy. When used as anode materials for the lithium-ion batteries, BDCFs electrode exhibits an improved performance. Concretely, the specific capacity of BDCFs still had a value of over 400 mAh g-1 after 100 cycles. Moreover, BDCFs exhibits better rate capability and less hysteresis in comparison to the pristine CFs. Such enhanced lithium storage capability can be attributed to the improvement of graphitization properties and the high amount of defects induced by boron.

  6. Humid environment stability of low pressure chemical vapor deposited boron doped zinc oxide used as transparent electrodes in thin film silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Steinhauser, Jerome, E-mail: jerome.steinhauser@oerlikon.com [Institute of Microtechnology (IMT), University of Neuchatel, CH-2000 Neuchatel (Switzerland); Meyer, Stefan; Schwab, Marlene; Fay, Sylvie; Ballif, Christophe [Institute of Microtechnology (IMT), University of Neuchatel, CH-2000 Neuchatel (Switzerland); Kroll, U.; Borrello, D. [Oerlikon Solar-Lab, 2000 Neuchatel (Switzerland)

    2011-10-31

    The stability in humid environment of low pressure chemical vapor deposited boron doped zinc oxide (LPCVD ZnO:B) used as transparent conductive oxide in thin film silicon solar cells is investigated. Damp heat treatment (exposure to humid and hot atmosphere) induces a degradation of the electrical properties of unprotected LPCVD ZnO:B layers. By combining analyses of the electrical and optical properties of the films, we are able to attribute this behavior to an increase of electron grain boundary scattering. This is in contrast to the intragrain scattering mechanisms, which are not affected by damp heat exposure. The ZnO stability is enhanced for heavily doped films due to easier tunneling through potential barrier at grain boundaries.

  7. Plasma enhanced diamond deposition on steel and Si substrates

    Institute of Scientific and Technical Information of China (English)

    Y.S. Li; Y. Tang; W. Chen; Q. Yang; C. Xiao; A. Hirose

    2009-01-01

    Diamond growth on Fe-Cr-Al-Si steel and Si substrates was comparatively investigated in microwave plasma enhanced chemical vapor deposition (MPCVD) reactor with different deposition parameters. Adherent nanocrystalline diamond films were directly deposited on this steel substrate under a typical deposition condition, whereas microcrystalline diamond films were produced on Si wafer. With increasing CH4 concentration, reaction pressure, or the total gas flow rate, the quality of nanocrystalline diamond films formed on Fe-Cr-Al-Si substrates is gradually deteriorated in terms of density and adhesion. This impaired diamond quality on steels is primarily associated with a combined effect by the substrate composition and the specific process conditions that favor excessive nucleation of diamond.

  8. Wet chemical treatment of boron doped emitters on n-type (1 0 0) c-Si prior to amorphous silicon passivation

    Energy Technology Data Exchange (ETDEWEB)

    Meddeb, H., E-mail: hosny.meddeb@gmail.com [KACST-Intel Consortium Center of Excellence in Nano-manufacturing Applications (CENA), Riyadh (Saudi Arabia); IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Research and Technology Center of Energy, Photovoltaic Department, Borj-Cedria Science and Technology Park, BP 95, 2050 (Tunisia); University of Carthage, Faculty of Sciences of Bizerta (Tunisia); Bearda, T.; Recaman Payo, M.; Abdelwahab, I. [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Abdulraheem, Y. [Electrical Engineering Department, College of Engineering & Petroleum, Kuwait University, P.O. Box 5969, 13060 Safat (Kuwait); Ezzaouia, H. [Research and Technology Center of Energy, Photovoltaic Department, Borj-Cedria Science and Technology Park, BP 95, 2050 (Tunisia); Gordon, I.; Szlufcik, J. [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Poortmans, J. [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Department of Electrical Engineering (ESAT), K.U. Leuven, 3001 Leuven (Belgium); Faculty of Sciences, University of Hasselt, Martelarenlaan 42, 3500 Hasselt (Belgium)

    2015-02-15

    Highlights: • The influence of the cleaning process using different HF-based cleaning on the amorphous silicon passivation of homojunction boron doped emitters is analyzed. • The effect of boron doping level on surface characteristics after wet chemical cleaning: For heavily doped surfaces, the reduction in contact angle was less pronounced, which proves that such surfaces are more resistant to oxide formation and remain hydrophobic for a longer time. In the case of low HF concentration, XPS measurements show higher oxygen concentrations for samples with higher doping level, probably due to the incomplete removal of the native oxide. • Higher effective lifetime is achieved at lower doping for all considered different chemical pre-treatments. • A post-deposition annealing improves the passivation level yielding emitter saturation currents determined by Auger recombination in the order of 70 fA/cm{sup 2} and below. • The dominance of Auger recombination over other type of B-induced defects on lifetime quality in the case of our p+ emitter. - Abstract: The influence of the cleaning process on the amorphous silicon passivation of homojunction emitters is investigated. A significant variation in the passivation quality following different cleaning sequences is not observed, even though differences in cleaning performance are evident. These results point out the effectiveness of our cleaning treatment and provide a hydrogen termination for intrinsic amorphous silicon passivation. A post-deposition treatment improves the passivation level yielding emitter saturation currents determined by Auger recombination in the order of 70 fA/cm{sup 2} and below.

  9. Low-Temperature Softening Due to Vacancy Orbital with Γ8 Quartet Ground State in Boron-Doped Floating Zone Silicon

    Science.gov (United States)

    Baba, Shotaro; Akatsu, Mitsuhiro; Mitsumoto, Keisuke; Komatsu, Satoru; Horie, Kunihiko; Nemoto, Yuichi; Yamada-Kaneta, Hiroshi; Goto, Terutaka

    2013-08-01

    We have carried out low-temperature ultrasonic measurements using shear-mode ultrasound to clarify the quantum state of a vacancy orbital in boron-doped silicon grown by the floating zone (FZ) method. The elastic constants (C11-C12)/2 and C44 of the transverse mode exhibit considerable softening below 2 and 5 K down to the base temperature of 30 mK, respectively. The elastic constant C44 measured by the three ultrasonic modes (kx,uy), (kz,ux), and (kx,uz) shows the different magnetic field dependences among the configurations under applied magnetic fields along the z-axis. The elastic softening and the magnetic field dependence of the elastic constants are accounted for by the quadrupole susceptibility based on the energy level scheme of the vacancy orbital with a Γ8 quartet ground state and Γ7 doublet excited state located at an energy of 1 K. The difference in C44 between the two ultrasonic modes (kz,ux) and (kx,uz) at fields along the z-axis indicates that the Γ8 quartet ground state is slightly split by local strain in the silicon sample. The quantum state of the vacancy orbital is expected to be sensitive to strain because of the extremely large quadrupole-strain coupling energy of gΓ≈ 105 K due to the extensively spreading orbital radius of r≈ 1 nm. The differences in variation of the low-temperature softening and magnetic field dependence among eight samples cut out from different locations of the present boron-doped FZ silicon ingot evidence the inhomogeneous distribution of the vacancy concentration.

  10. Microwave activation of electrochemical processes: High temperature phenol and triclosan electro-oxidation at carbon and diamond electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Ghanem, Mohamed A.; Marken, Frank [Department of Chemistry, University of Bath, Bath BA2 7AY (United Kingdom); Compton, Richard G.; Coles, Barry A. [Physical and Theoretical Chemistry Laboratory, Oxford University, Oxford OX1 3QZ (United Kingdom); Psillakis, Elefteria [Laboratory of Aquatic Chemistry, Department of Environmental Engineering, Technical University of Crete, Polytechnioupolis, 73100 Chania-Crete (Greece); Kulandainathan, M. Anbu [Central Electrochemical Research Institute, Karaikudi (India)

    2007-12-20

    The electrochemical oxidation of phenolic compounds in aqueous media is known to be affected by the formation of electro-polymerized organic layers which lead to partial or complete electrode blocking. In this study the effect of high intensity microwave radiation applied locally at the electrode surface is investigated for the oxidation of phenol and triclosan in alkaline solution at a 500 {mu}m diameter glassy carbon or at a 500 {mu}m x 500 {mu}m boron-doped diamond electrode. The temperature at the electrode surface and mass transport enhancement are determined by calibration with the Fe(CN){sub 6}{sup 3-/4-} redox system in aqueous 0.3 M NaOH and 0.2 NaCl (pH 12) solution. The calibration shows that strong thermal and mass transport effects occur at both glassy carbon and boron-doped diamond electrodes. The average electrode temperature reaches up to 390 K and mass transport enhancements of more than 20-fold are possible. For the phenol electro-oxidation at glassy carbon electrodes and at a concentration below 2 mM a multi-electron oxidation (ca. 4 electrons) occurs in the presence of microwave radiation. For the electro-oxidation of the more hydrophobic triclosan only the one-electron oxidation occurs. Although currents are enhanced in presence of microwave radiation, rapid blocking of the electrode surface in particular at high phenol concentrations still occurs. (author)

  11. Microplasma device architectures with various diamond nanostructures

    Science.gov (United States)

    Kunuku, Srinivasu; Jothiramalingam Sankaran, Kamatchi; Leou, Keh-Chyang; Lin, I.-Nan

    2017-02-01

    Diamond nanostructures (DNSs) were fabricated from three different morphological diamonds, microcrystalline diamond (MCD), nanocrystalline diamond (NCD), and ultrananocrystalline diamond (UNCD) films, using a reactive ion etching method. The plasma illumination (PI) behavior of microplasma devices using the DNSs and the diamond films as cathode were investigated. The Paschen curve approach revealed that the secondary electron emission coefficient (γ value) of diamond materials is similar irrespective of the microstructure (MCD, NCD, and UNCD) and geometry of the materials (DNSs and diamond films). The diamond materials show markedly larger γ-coefficient than conventional metallic cathode materials such as Mo that resulted in markedly better PI behavior for the corresponding microplasma devices. Moreover, the PI behavior, i.e. the voltage dependence of plasma current density (J pl‑V), plasma density (n e‑V), and the robustness of the devices, varied markedly with the microstructure and geometry of the cathode materials that was closely correlated to the electron field emission (EFE) properties of the cathode materials. The UNCD nanopillars, possessing good EFE properties, resulted in superior PI behavior, whereas the MCD diamond films with insufficient EFE properties led to inferior PI behavior. Consequently, enhancement of plasma characteristics is the collective effects of EFE behavior and secondary electron emission characteristics of diamond-based cathode materials.

  12. Electroless oxidation of diamond surfaces in ceric and ferricyanide solutions: An easy way to produce 'C-O' functional groups

    Energy Technology Data Exchange (ETDEWEB)

    Simon, N., E-mail: nathalie.simon@uvsq.f [Institut Lavoisier de Versailles, UMR 8180, Universite de Versailles-St-Quentin en Yvelines, 45 avenue des Etats Unis, 78000 Versailles (France); Charrier, G.; Etcheberry, A. [Institut Lavoisier de Versailles, UMR 8180, Universite de Versailles-St-Quentin en Yvelines, 45 avenue des Etats Unis, 78000 Versailles (France)

    2010-08-01

    Despite many works are devoted to oxidation of diamond surfaces, it is still a challenge, to successfully produce well defined 'C-O' functions, particularly for functionalization purposes. In this paper we describe and compare, for the first time, the 'electroless' oxidation of as-deposited polycrystalline boron-doped diamond (BDD) films in ceric and ferricyanide solutions at room temperature. Both reactions efficiently generate oxygen functionalities on BDD surface. While a higher amount of 'C-O' moieties is produced with Ce{sup 4+} as oxidizing agent, the use of ferricyanide specie seems the most interesting to specifically generate hydroxyl groups. Additionally, this easy to perform oxidative method appears not damaging for diamond surfaces and adapted to conductive or non-conductive materials. The resulting surfaces were characterized using X-ray photoelectron spectroscopy, contact angle and capacitance-voltage analysis.

  13. Influence of chloride-mediated oxidation on the electrochemical degradation of the direct black 22 dye using boron-doped diamond and β-PbO2 anodes

    Directory of Open Access Journals (Sweden)

    Douglas A. C. Coledam

    2014-01-01

    Full Text Available The Direct Black 22 dye was electrooxidized at 30 mA cm-2 in a flow cell using a BDD or β-PbO2 anode, varying pH (3, 7, 11, temperature (10, 25, 45 °C, and [NaCl] (0 or 1.5 g L-1. In the presence of NaCl, decolorization rates were similar for all conditions investigated, but much higher than predicted through a theoretical model assuming mass-transport control; similar behavior was observed for COD removal (at pH 7, 25 °C, independently of the anode. With no NaCl, COD removals were also higher than predicted with a theoretical model, which suggests the existence of distinct dye degradation pathways.

  14. Diamond and Hydrogenated Carbons for Advanced Batteries and Fuel Cells: Fundamental Studies and Applications.

    Energy Technology Data Exchange (ETDEWEB)

    Swain; Greg M.

    2009-04-13

    The original funding under this project number was awarded for a period 12/1999 until 12/2002 under the project title Diamond and Hydrogenated Carbons for Advanced Batteries and Fuel Cells: Fundamental Studies and Applications. The project was extended until 06/2003 at which time a renewal proposal was awarded for a period 06/2003 until 06/2008 under the project title Metal/Diamond Composite Thin-Film Electrodes: New Carbon Supported Catalytic Electrodes. The work under DE-FG02-01ER15120 was initiated about the time the PI moved his research group from the Department of Chemistry at Utah State University to the Department of Chemistry at Michigan State University. This DOE-funded research was focused on (i) understanding structure-function relationships at boron-doped diamond thin-film electrodes, (ii) understanding metal phase formation on diamond thin films and developing electrochemical approaches for producing highly dispersed electrocatalyst particles (e.g., Pt) of small nominal particle size, (iii) studying the electrochemical activity of the electrocatalytic electrodes for hydrogen oxidation and oxygen reduction and (iv) conducting the initial synthesis of high surface area diamond powders and evaluating their electrical and electrochemical properties when mixed with a Teflon binder.

  15. Industrial diamond

    Science.gov (United States)

    Olson, D.W.

    2013-01-01

    Estimated 2012 world production of natural and synthetic industrial diamond was about 4.45 billion carats. During 2012, natural industrial diamonds were produced in at least 20 countries, and synthetic industrial diamond was produced in at least 12 countries. About 99 percent of the combined natural and synthetic global output was produced in Belarus, China, Ireland, Japan, Russia, South Africa and the United States. During 2012, China was the world’s leading producer of synthetic industrial diamond followed by the United States and Russia. In 2012, the two U.S. synthetic producers, one in Pennsylvania and the other in Ohio, had an estimated output of 103 million carats, valued at about $70.6 million. This was an estimated 43.7 million carats of synthetic diamond bort, grit, and dust and powder with a value of $14.5 million combined with an estimated 59.7 million carats of synthetic diamond stone with a value of $56.1 million. Also in 2012, nine U.S. firms manufactured polycrystalline diamond (PCD) from synthetic diamond grit and powder. The United States government does not collect or maintain data for either domestic PCD producers or domestic chemical vapor deposition (CVD) diamond producers for quantity or value of annual production. Current trade and consumption quantity data are not available for PCD or for CVD diamond. For these reasons, PCD and CVD diamond are not included in the industrial diamond quantitative data reported here.

  16. Highly-focused boron implantation in diamond and imaging using the nuclear reaction 11B(p, α)8Be

    Science.gov (United States)

    Ynsa, M. D.; Ramos, M. A.; Skukan, N.; Torres-Costa, V.; Jakšić, M.

    2015-04-01

    Diamond is an especially attractive material because of its gemological value as well as its unique mechanical, chemical and physical properties. One of these properties is that boron-doped diamond is an electrically p-type semiconducting material at practically any boron concentration. This property makes it possible to use diamonds for multiple industrial and technological applications. Boron can be incorporated into pure diamond by different techniques including ion implantation. Although typical energies used to dope diamond by ion implantation are about 100 keV, implantations have also been performed with energies above MeV. In this work CMAM microbeam setup has been used to demonstrate capability to implant boron with high energies. An 8 MeV boron beam with a size of about 5 × 3 μm2 and a beam current higher than 500 pA has been employed while controlling the beam position and fluence at all irradiated areas. The subsequent mapping of the implanted boron in diamond has been obtained using the strong and broad nuclear reaction 11B(p, α)8Be at Ep = 660 keV. This reaction has a high Q-value (8.59 MeV for α0 and 5.68 MeV for α1) and thus is almost interference-free. The sensitivity of the technique is studied in this work.

  17. Comparative study of the effects of phosphorus and boron doping in vapor-liquid-solid growth with fixed flow of silicon gas

    Science.gov (United States)

    Islam, Md. Shofiqul; Mehedi, Ibrahim Mustafa

    2016-04-01

    This work was carried out to investigate the comparative effects of phosphorus and boron doing in vapor-liquid-solid (VLS) growth. Doped Si microneedles were grown by VLS mechanism at the temperature of 700 °C or less using Au as the catalyst. VLS growth using in-situ doping with the mixed gas of Si2H6 and PH3 produced phosphorus doped n-Si microneedles at Au dot sites, whereas, the mixed gas of Si2H6 and B2H6 produced boron doped p-Si microneedles. The variation of growth rate, diameter, resistivity, impurity concentration and carrier (electron, hole) mobility of these n-Si and p-Si microneeedles were investigated and compared with the variation of dopant gas (PH3 or B2H6) flow, with a fixed flow of Si gas (Si2H6). This comparative study shall be helpful while fabricating devices by growing n-Si and p-Si microneedles one above another by multistep (2-step or 3-step) VLS growth.

  18. Proceedings of the conference on electrochemistry of carbon allotropes: Graphite, fullerenes and diamond

    Energy Technology Data Exchange (ETDEWEB)

    Kinoshita, K. [ed.] [Lawrence Berkeley National Lab., CA (United States); Scherson, D. [ed.] [Case Western Reserve Univ., Cleveland, OH (United States)

    1998-02-01

    This conference provided an opportunity for electrochemists, physicists, materials scientists and engineers to meet and exchange information on different carbon allotropes. The presentations and discussion among the participants provided a forum to develop recommendations on research and development which are relevant to the electrochemistry of carbon allotropes. The following topics which are relevant to the electrochemistry of carbon allotropes were addressed: Graphitized and disordered carbons, as Li-ion intercalation anodes for high-energy-density, high-power-density Li-based secondary batteries; Carbons as substrate materials for catalysis and electrocatalysis; Boron-doped diamond film electrodes; and Electrochemical characterization and electrosynthesis of fullerenes and fullerene-type materials. Abstracts of the presentations are presented.

  19. Strongly correlated impurity band superconductivity in diamond: X-ray spectroscopic evidence

    Directory of Open Access Journals (Sweden)

    G. Baskaran

    2006-01-01

    Full Text Available In a recent X-ray absorption study in boron doped diamond, Nakamura et al. have seen a well isolated narrow boron impurity band in non-superconducting samples and an additional narrow band at the chemical potential in a superconducting sample. We interpret the beautiful spectra as evidence for upper Hubbard band of a Mott insulating impurity band and an additional metallic 'mid-gap band' of a conducting 'self-doped' Mott insulator. This supports the basic framework of a recent theory of the present author of strongly correlated impurity band superconductivity (impurity band resonating valence bond, IBRVB theory in a template of a wide-gap insulator, with no direct involvement of valence band states.

  20. In situ detection of dopamine using nitrogen incorporated diamond nanowire electrode

    Science.gov (United States)

    Shalini, Jayakumar; Sankaran, Kamatchi Jothiramalingam; Dong, Chung-Li; Lee, Chi-Young; Tai, Nyan-Hwa; Lin, I.-Nan

    2013-01-01

    Significant difference was observed for the simultaneous detection of dopamine (DA), ascorbic acid (AA), and uric acid (UA) mixture using nitrogen incorporated diamond nanowire (DNW) film electrodes grown by microwave plasma enhanced chemical vapor deposition. For the simultaneous sensing of ternary mixtures of DA, AA, and UA, well-separated voltammetric peaks are obtained using DNW film electrodes in differential pulse voltammetry (DPV) measurements. Remarkable signals in cyclic voltammetry responses to DA, AA and UA (three well defined voltammetric peaks at potentials around 235, 30, 367 mV for DA, AA and UA respectively) and prominent enhancement of the voltammetric sensitivity are observed at the DNW electrodes. In comparison to the DPV results of graphite, glassy carbon and boron doped diamond electrodes, the high electrochemical potential difference is achieved via the use of the DNW film electrodes which is essential for distinguishing the aforementioned analytes. The enhancement in EC properties is accounted for by increase in sp2 content, new C-N bonds at the diamond grains, and increase in the electrical conductivity at the grain boundary, as revealed by X-ray photoelectron spectroscopy and near edge X-ray absorption fine structure measurements. Consequently, the DNW film electrodes provide a clear and efficient way for the selective detection of DA in the presence of AA and UA.Significant difference was observed for the simultaneous detection of dopamine (DA), ascorbic acid (AA), and uric acid (UA) mixture using nitrogen incorporated diamond nanowire (DNW) film electrodes grown by microwave plasma enhanced chemical vapor deposition. For the simultaneous sensing of ternary mixtures of DA, AA, and UA, well-separated voltammetric peaks are obtained using DNW film electrodes in differential pulse voltammetry (DPV) measurements. Remarkable signals in cyclic voltammetry responses to DA, AA and UA (three well defined voltammetric peaks at potentials around 235

  1. Preparation of p-n Junction Diode by B-Doped Diamond Film Grown on Si-Doped c-BN

    Institute of Scientific and Technical Information of China (English)

    王成新; 高春晓; 张铁臣; 刘洪武; 李迅; 韩永吴; 骆继峰; 申彩霞

    2002-01-01

    A heterojunction diode has been fabricated by boron-doped p-type diamond thin film grown epitaxially ona silicon-doped n-type cubic boron nitride bulk crystal using the conventional hot tilament chemical vapourdeposition method. The ohmic electrode of Ti (50nm)/Mo (l00nm)/Au (300nm) for the p-type diamond filmand the bulk crystal of the c-BN were deposited by the rf planar magnetron method. Then the device wasannealed at 410°C in air for i h in order to form ohmic metal alloy. The current-voltage characteristics of theheterojunction diode were measured and the result indicated that the rectification ratio reached 10a, and theturn-on voltage and the highest current were 7 V and 0.35 mA, respectively.

  2. Gas doping ratio effects on p-type hydrogenated nanocrystalline silicon thin films grown by hot-wire chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Luo, P.Q. [Solar Energy Institute, Department of Physics, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai 200240 (China)], E-mail: robt@sjtu.edu.cn; Zhou, Z.B. [Solar Energy Institute, Department of Physics, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai 200240 (China)], E-mail: zbzhou@sjtu.edu.cn; Chan, K.Y. [Thin Film Laboratory, Faculty of Engineering, Multimedia University, Jalan Multimedia, Cyberjaya 63100, Selangor (Malaysia); Tang, D.Y.; Cui, R.Q.; Dou, X.M. [Solar Energy Institute, Department of Physics, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai 200240 (China)

    2008-12-30

    Hydrogenated nanocrystalline silicon (nc-Si:H) grown by hot-wire chemical vapor deposition (HWCVD) has recently drawn significant attention in the area of thin-film large area optoelectronics due to possibility of high deposition rate. We report on the effects of diborane (B{sub 2}H{sub 6}) doping ratio on the microstructural and optoelectrical properties of the p-type nc-Si:H thin films grown by HWCVD at low substrate temperature of 200 deg. C and with high hydrogen dilution ratio of 98.8%. An attempt has been made to elucidate the boron doping mechanism of the p-type nc-Si:H thin films deposited by HWCVD and the correlation between the B{sub 2}H{sub 6} doping ratio, crystalline volume fraction, optical band gap and dark conductivity.

  3. Nanocrystalline ceramic materials

    Science.gov (United States)

    Siegel, Richard W.; Nieman, G. William; Weertman, Julia R.

    1994-01-01

    A method for preparing a treated nanocrystalline metallic material. The method of preparation includes providing a starting nanocrystalline metallic material with a grain size less than about 35 nm, compacting the starting nanocrystalline metallic material in an inert atmosphere and annealing the compacted metallic material at a temperature less than about one-half the melting point of the metallic material.

  4. Electrical and photocatalytic properties of boron-doped ZnO nanostructure grown on PET-ITO flexible substrates by hydrothermal method.

    Science.gov (United States)

    Wang, Wei; Ai, Taotao; Yu, Qi

    2017-02-13

    Boron-doped zinc oxide sheet-spheres were synthesized on PET-ITO flexible substrates using a hydrothermal method at 90 °C for 5 h. The results of X-ray diffraction and X-ray photoelectron spectroscopy indicated that the B atoms were successfully doped into the ZnO lattice, the incorporation of B led to an increase in the lattice constant of ZnO and a change in its internal stress. The growth mechanism of pure ZnO nanorods and B-doped ZnO sheet-spheres was specifically investigated. The as-prepared BZO/PET-ITO heterojunction possessed obvious rectification properties and its positive turn-on voltage was 0.4 V. The carrier transport mechanisms involved three models such as hot carrier tunneling theory, tunneling recombination, and series-resistance effect were explored. The BZO/PET-ITO nanostructures were more effective than pure ZnO to degrade the RY 15, and the degradation rate reached 41.45%. The decomposition process with BZO nanostructure followed first-order reaction kinetics. The photocurrent and electrochemical impedance spectroscopy revealed that the B-doping could promote the separation of photo-generated electron-hole pairs, which was beneficial to enhance the photocatalytic activity. The photocurrent density of B-doped and pure ZnO/PET-ITO were 0.055 mA/cm(2) and 0.016 mA/cm(2), respectively. The photocatalytic mechanism of the sample was analyzed by the energy band theory.

  5. Electrical and photocatalytic properties of boron-doped ZnO nanostructure grown on PET–ITO flexible substrates by hydrothermal method

    Science.gov (United States)

    Wang, Wei; Ai, Taotao; Yu, Qi

    2017-02-01

    Boron-doped zinc oxide sheet-spheres were synthesized on PET–ITO flexible substrates using a hydrothermal method at 90 °C for 5 h. The results of X-ray diffraction and X-ray photoelectron spectroscopy indicated that the B atoms were successfully doped into the ZnO lattice, the incorporation of B led to an increase in the lattice constant of ZnO and a change in its internal stress. The growth mechanism of pure ZnO nanorods and B-doped ZnO sheet-spheres was specifically investigated. The as-prepared BZO/PET–ITO heterojunction possessed obvious rectification properties and its positive turn-on voltage was 0.4 V. The carrier transport mechanisms involved three models such as hot carrier tunneling theory, tunneling recombination, and series-resistance effect were explored. The BZO/PET–ITO nanostructures were more effective than pure ZnO to degrade the RY 15, and the degradation rate reached 41.45%. The decomposition process with BZO nanostructure followed first-order reaction kinetics. The photocurrent and electrochemical impedance spectroscopy revealed that the B-doping could promote the separation of photo-generated electron-hole pairs, which was beneficial to enhance the photocatalytic activity. The photocurrent density of B-doped and pure ZnO/PET–ITO were 0.055 mA/cm2 and 0.016 mA/cm2, respectively. The photocatalytic mechanism of the sample was analyzed by the energy band theory.

  6. Boron-doped peroxo-zirconium oxide dielectric for high-performance, low-temperature, solution-processed indium oxide thin-film transistor.

    Science.gov (United States)

    Park, Jee Ho; Yoo, Young Bum; Lee, Keun Ho; Jang, Woo Soon; Oh, Jin Young; Chae, Soo Sang; Lee, Hyun Woo; Han, Sun Woong; Baik, Hong Koo

    2013-08-28

    We developed a solution-processed indium oxide (In2O3) thin-film transistor (TFT) with a boron-doped peroxo-zirconium (ZrO2:B) dielectric on silicon as well as polyimide substrate at 200 °C, using water as the solvent for the In2O3 precursor. The formation of In2O3 and ZrO2:B films were intensively studied by thermogravimetric differential thermal analysis (TG-DTA), attenuated total reflectance Fourier transform infrared spectroscopy (ATR-FT IR), high-resolution X-ray diffraction (HR-XRD), and X-ray photoelectron spectroscopy (XPS). Boron was selected as a dopant to make a denser ZrO2 film. The ZrO2:B film effectively blocked the leakage current at 200 °C with high breakdown strength. To evaluate the ZrO2:B film as a gate dielectric, we fabricated In2O3 TFTs on the ZrO2:B dielectrics with silicon substrates and annealed the resulting samples at 200 and 250 °C. The resulting mobilities were 1.25 and 39.3 cm(2)/(V s), respectively. Finally, we realized a flexible In2O3 TFT with the ZrO2:B dielectric on a polyimide substrate at 200 °C, and it successfully operated a switching device with a mobility of 4.01 cm(2)/(V s). Our results suggest that aqueous solution-processed In2O3 TFTs on ZrO2:B dielectrics could potentially be used for low-cost, low-temperature, and high-performance flexible devices.

  7. Diamond Nanowires: A Novel Platform for Electrochemistry and Matrix-Free Mass Spectrometry

    Directory of Open Access Journals (Sweden)

    Sabine Szunerits

    2015-05-01

    Full Text Available Over the last decades, carbon-based nanostructures have generated a huge interest from both fundamental and technological viewpoints owing to their physicochemical characteristics, markedly different from their corresponding bulk states. Among these nanostructured materials, carbon nanotubes (CNTs, and more recently graphene and its derivatives, hold a central position. The large amount of work devoted to these materials is driven not only by their unique mechanical and electrical properties, but also by the advances made in synthetic methods to produce these materials in large quantities with reasonably controllable morphologies. While much less studied than CNTs and graphene, diamond nanowires, the diamond analogue of CNTs, hold promise for several important applications. Diamond nanowires display several advantages such as chemical inertness, high mechanical strength, high thermal and electrical conductivity, together with proven biocompatibility and existence of various strategies to functionalize their surface. The unique physicochemical properties of diamond nanowires have generated wide interest for their use as fillers in nanocomposites, as light detectors and emitters, as substrates for nanoelectronic devices, as tips for scanning probe microscopy as well as for sensing applications. In the past few years, studies on boron-doped diamond nanowires (BDD NWs focused on increasing their electrochemical active surface area to achieve higher sensitivity and selectivity compared to planar diamond interfaces. The first part of the present review article will cover the promising applications of BDD NWS for label-free sensing. Then, the potential use of diamond nanowires as inorganic substrates for matrix-free laser desorption/ionization mass spectrometry, a powerful label-free approach for quantification and identification of small compounds, will be discussed.

  8. Adsorptive Separation and Sequestration of Krypton, I and C14 on Diamond Nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Ghosh, Tushar [Univ. of Missouri, Columbia, MO (United States); Loyalka, Sudarsha [Univ. of Missouri, Columbia, MO (United States); Prelas, Mark [Univ. of Missouri, Columbia, MO (United States); Viswanath, Dabir [Univ. of Missouri, Columbia, MO (United States)

    2015-03-31

    The objective of this research proposal was to address the separation and sequestration of Kr and I from each other using nano-sized diamond particles and retaining these in diamond until they decay to the background level or can be used as a byproduct. Following removal of Kr and I, an adsorbent will be used to adsorb and store CO2 from the CO2 rich stream. A Field Enhanced Diffusion with Optical Activation (FEDOA-a large scale process that takes advantage of thermal, electrical, and optical activation to enhance the diffusion of an element into diamond structure) was used to load Kr and I on micron or nano sized particles having a larger relative surface area. The diamond particles can be further increased by doping it with boron followed by irradiation in a neutron flux. Previous studies showed that the hydrogen storage capacity could be increased significantly by using boron-doped irradiated diamond particles. Diamond powders were irradiated for a longer time by placing them in a quartz tube. The surface area was measured using a Quantachrome Autosorb system. No significant increase in the surface area was observed. Total surface area was about 1.7 m2/g. This suggests the existence of very minimal pores. Interestingly it showed hysteresis upon desorption. A reason for this may be strong interaction between the surface and the nitrogen molecules. Adsorption runs at higher temperatures did not show any adsorption of krypton on diamond. Use of a GC with HID detector to determine the adsorption capacity from the breakthrough curves was attempted, but experimental difficulties were encountered.

  9. Super-mercuryphobic and hydrophobic diamond surfaces with hierarchical structures: Vanishment of the contact angle hysteresis with mercury

    Energy Technology Data Exchange (ETDEWEB)

    Escobar, Juan V., E-mail: escobar@fisica.unam.mx [Instituto de Física, Universidad Nacional Autónoma de México, PO Box 20-364, DF, México, 01000 (Mexico); Garza, Cristina, E-mail: cgarza@fisica.unam.mx [Instituto de Física, Universidad Nacional Autónoma de México, PO Box 20-364, DF, México, 01000 (Mexico); Alonso, Juan Carlos, E-mail: alonso@unam.mx [Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, PO Box 70-360, DF, México, 04510 (Mexico); Castillo, Rolando, E-mail: rolandoc@fisica.unam.mx [Instituto de Física, Universidad Nacional Autónoma de México, PO Box 20-364, DF, México, 01000 (Mexico)

    2013-05-15

    Increased roughness is known to enhance the natural wetting properties of surfaces, making them either more hydrophobic or more hydrophilic. In this work we study the wetting properties of water and mercury drops in contact with boron doped diamond films with progressively increased surface roughnesses. We show how thermal oxidation of a microcrystalline film creates pyramids decorated with sub-micron protrusions that turn its naturally mercuryphobic surface into super-mercuryphobic. With this liquid, we observe the vanishment of the contact angle hysteresis that is expected for rough surfaces as the contact angle approaches 180, making small drops of mercury roll along out of the surface at an apparent zero tilt-angle. In contrast, the incorporation of nano-globules on the oxidized surface through a silanization process is necessary to increase the hydrophobic properties of the film for which the contact angle with water reaches 138°. The wetting states that dominate in each case are discussed.

  10. Super-mercuryphobic and hydrophobic diamond surfaces with hierarchical structures: Vanishment of the contact angle hysteresis with mercury

    Science.gov (United States)

    Escobar, Juan V.; Garza, Cristina; Alonso, Juan Carlos; Castillo, Rolando

    2013-05-01

    Increased roughness is known to enhance the natural wetting properties of surfaces, making them either more hydrophobic or more hydrophilic. In this work we study the wetting properties of water and mercury drops in contact with boron doped diamond films with progressively increased surface roughnesses. We show how thermal oxidation of a microcrystalline film creates pyramids decorated with sub-micron protrusions that turn its naturally mercuryphobic surface into super-mercuryphobic. With this liquid, we observe the vanishment of the contact angle hysteresis that is expected for rough surfaces as the contact angle approaches 180˚, making small drops of mercury roll along out of the surface at an apparent zero tilt-angle. In contrast, the incorporation of nano-globules on the oxidized surface through a silanization process is necessary to increase the hydrophobic properties of the film for which the contact angle with water reaches 138°. The wetting states that dominate in each case are discussed.

  11. High quality boron-doped epitaxial layers grown at 200°C from SiF4/H2/Ar gas mixtures for emitter formation in crystalline silicon solar cells

    Directory of Open Access Journals (Sweden)

    Ronan Léal

    2017-02-01

    Full Text Available Controlling the doping profile in solar cells emitter and front/back surface field is mandatory to reach high efficiencies. In the current state of the art, these doped layers are made by dopant diffusion at around 900°C, which implies potential temperature induced damages in the c-Si absorber and for which a precise control of doping is difficult. An alternative solution based on boron-doped epitaxial silicon layers grown by plasma-enhanced chemical vapor deposition (PECVD from 200°C using SiF4/H2/Ar/B2H6 chemistry is reported. The structural properties of the doped and undoped epitaxial layers were assessed by spectroscopic ellipsometry (SE, high resolution transmission electron microscopy (HR-TEM and X-ray diffraction (XRD. The incorporation of boron has been studied via plasma profiling time of flight mass spectrometry (PP-TOFMS and secondary ion mass spectrometry (SIMS measurements. The boron-doped epitaxial layers revealed excellent structural and electrical properties even for high carrier concentrations (>1019cm-3. Sheet resistances between 100 and 130 Ω/sq can been obtained depending on the thickness and the doping concentration, which is within the range of targeted values for emitters in c-Si solar cells. Electrochemical capacitance voltage (ECV revealed a uniform doping profile around 3.1019 cm-3 and by comparing with SIMS measurement a doping efficiency around 50% has been found.

  12. High quality boron-doped epitaxial layers grown at 200°C from SiF4/H2/Ar gas mixtures for emitter formation in crystalline silicon solar cells

    Science.gov (United States)

    Léal, Ronan; Haddad, Farah; Poulain, Gilles; Maurice, Jean-Luc; Roca i Cabarrocas, Pere

    2017-02-01

    Controlling the doping profile in solar cells emitter and front/back surface field is mandatory to reach high efficiencies. In the current state of the art, these doped layers are made by dopant diffusion at around 900°C, which implies potential temperature induced damages in the c-Si absorber and for which a precise control of doping is difficult. An alternative solution based on boron-doped epitaxial silicon layers grown by plasma-enhanced chemical vapor deposition (PECVD) from 200°C using SiF4/H2/Ar/B2H6 chemistry is reported. The structural properties of the doped and undoped epitaxial layers were assessed by spectroscopic ellipsometry (SE), high resolution transmission electron microscopy (HR-TEM) and X-ray diffraction (XRD). The incorporation of boron has been studied via plasma profiling time of flight mass spectrometry (PP-TOFMS) and secondary ion mass spectrometry (SIMS) measurements. The boron-doped epitaxial layers revealed excellent structural and electrical properties even for high carrier concentrations (>1019cm-3). Sheet resistances between 100 and 130 Ω/sq can been obtained depending on the thickness and the doping concentration, which is within the range of targeted values for emitters in c-Si solar cells. Electrochemical capacitance voltage (ECV) revealed a uniform doping profile around 3.1019 cm-3 and by comparing with SIMS measurement a doping efficiency around 50% has been found.

  13. Diamond Nanophotonics

    CERN Document Server

    Aharonovich, Igor

    2014-01-01

    The burgeoning field of nanophotonics has grown to be a major research area, primarily because of the ability to control and manipulate single quantum systems (emitters) and single photons on demand. For many years studying nanophotonic phenomena was limited to traditional semiconductors (including silicon and GaAs) and experiments were carried out predominantly at cryogenic temperatures. In the last decade, however, diamond has emerged as a new contender to study photonic phenomena at the nanoscale. Offering plethora of quantum emitters that are optically active at room temperature and ambient conditions, diamond has been exploited to demonstrate super-resolution microscopy and realize entanglement, Purcell enhancement and other quantum and classical nanophotonic effects. Elucidating the importance of diamond as a material, this review will highlight the recent achievements in the field of diamond nanophotonics, and convey a roadmap for future experiments and technological advancements.

  14. Nanocrystalline sp 2 and sp 3 carbons: CVD synthesis and applications

    Science.gov (United States)

    Terranova, M. L.; Rossi, M.; Tamburri, E.

    2016-11-01

    The design and production of innovative materials based on nanocrystalline sp 2- and sp 3-coordinated carbons is presently a focus of the scientific community. We present a review of the nanostructures obtained in our labs using a series of synthetic routes, which make use of chemical vapor deposition (CVD) techniques for the selective production of non-planar graphitic nanostructures, nanocrystalline diamonds, and hybrid two-phase nanostructures.

  15. A novel electroless method to prepare a platinum electrocatalyst on diamond for fuel cell applications

    Science.gov (United States)

    Lyu, Xiao; Hu, Jingping; Foord, John S.; Wang, Qiang

    2013-11-01

    A novel electroless deposition method was demonstrated to prepare a platinum electrocatalyst on boron doped diamond (BDD) substrates without the need for pre-activation. This green method addresses the uniformity and particle size issues associated with electrodeposition and circumvents the pre-activation procedure which is necessary for conventional electroless deposition. The inert BDD substrate formed a galvanic couple with an iron wire, to overcome the activation barrier associated with conventional electroless deposition on diamond, leading to the formation of Pt nanoparticles on the electrode surface in a galvanic process coupled to a chemical process. When sodium hypophosphite was employed as the reducing agent to drive the electroless reaction Pt deposits which were contaminated with iron and phosphorus resulted. In contrast, the reducing agent ascorbic acid gave rise to high purity Pt nanoparticles. Optimal deposition conditions with respect to bath temperature, pH value and stabilizing additives are identified. Using this approach, high purity and uniformly distributed platinum nanoparticles are obtained on the diamond electrode surface, which demonstrate a high electrochemical activity towards methanol oxidation.

  16. Engineered CVD Diamond Coatings for Machining and Tribological Applications

    Science.gov (United States)

    Dumpala, Ravikumar; Chandran, Maneesh; Ramachandra Rao, M. S.

    2015-07-01

    Diamond is an allotropes of carbon and is unique because of its extreme hardness (~100 GPa), low friction coefficient (fracture toughness can be tuned by controlling the grain size of the coatings from a few microns to a few nanometers. In this review, characteristics and performance of the CVD diamond coatings deposited on cemented tungsten carbide (WC-Co) substrates were discussed with an emphasis on WC-Co grade selection, substrate pretreatment, nanocrystallinity and microcrystallinity of the coating, mechanical and tribological characteristics, coating architecture, and interfacial adhesion integrity. Engineered coating substrate architecture is essential for CVD diamond coatings to perform well under harsh and highly abrasive machining and tribological conditions.

  17. PREFACE: Science's gem: diamond science 2009 Science's gem: diamond science 2009

    Science.gov (United States)

    Mainwood, Alison; Newton, Mark E.; Stoneham, Marshall

    2009-09-01

    diamond's exceptional properties for quantum information processing [2], a topic on which there have been many recent papers, and where a diamond colour centre single photon source is already commercially available. Biomedical applications of diamond are recognised, partly tribological and partly electrochemical, but lie outside the present group of papers. Processing and controlling diamond surfaces and interfaces with other materials in their environment are critical steps en route to exploitation. Boron-doped diamond has already found application in electro-analysis and in the bulk oxidation of dissolved species in solution [3]. Energy-related applications—ranging from high-power electronics [3] to a potential first wall of fusion reactors [4]—are further exciting potential applications. Even small and ugly diamonds have value. Their mechanical properties [5] dominate, with significant niche applications such as thermal sinks. The major applications for diamond to date exploit only a fraction of diamond's special properties: visual for status diamonds, and mechanical for working diamonds. Diamond physics reaches well beyond the usual laboratory, to the geological diamond formation processes in the Earth's mantle. Characterization of natural gem diamonds [6, 7] is one part of the detective story that allows us to understand the conditions under which they formed. It was only half a century ago that the scientific and technological challenges of diamond synthesis were met systematically. Today, most of the recent research on diamond has concentrated on synthetics, whether created using high pressure, high temperature (HPHT) techniques or chemical vapour deposition (CVD). The HPHT synthesis of diamond has advanced dramatically [8, 9] to the extent that dislocation birefringence [10] can be largely eliminated. In silicon technology, the elimination of dislocations was a major step in microelectronics. Now, even diamond can be synthesised containing virtually no

  18. Nanocrystalline ceramic materials

    Science.gov (United States)

    Siegel, R.W.; Nieman, G.W.; Weertman, J.R.

    1994-06-14

    A method is disclosed for preparing a treated nanocrystalline metallic material. The method of preparation includes providing a starting nanocrystalline metallic material with a grain size less than about 35 nm, compacting the starting nanocrystalline metallic material in an inert atmosphere and annealing the compacted metallic material at a temperature less than about one-half the melting point of the metallic material. 19 figs.

  19. Electrochemical diamond sensors for TNT detection in water

    Energy Technology Data Exchange (ETDEWEB)

    Sanoit, J. de [CEA-LIST-DETECS, Laboratoire Capteur Diamant, CEA-Saclay, Gif-sur Yvette, F-91191 (France)], E-mail: jacques.desanoit@cea.fr; Vanhove, Emilie [CEA-LIST-DETECS, Laboratoire Capteur Diamant, CEA-Saclay, Gif-sur Yvette, F-91191 (France); Mailley, Pascal [INAC, SPrAM, CREAB (CEA-Grenoble), F-38021 (France); Bergonzo, Philippe [CEA-LIST-DETECS, Laboratoire Capteur Diamant, CEA-Saclay, Gif-sur Yvette, F-91191 (France)

    2009-10-01

    An electrochemically stabilized boron doped diamond electrode prepared by chemical vapour deposition (CVD) is used for electrochemical TNT sensing in aqueous solutions. Square wave voltammograms (SWVs) exhibit three highly resolved peaks at -0.47, -0.62 and -0.76 V vs. Ag-AgCl reference electrode, respectively. The current vs. TNT concentration plot shows a linear relationship with a same slope for the two first TNT peaks at {mu}g L{sup -1} and mg L{sup -1} concentration ranges. Detection and quantification limits of 10 and 25 {mu}g L{sup -1}, respectively, were obtained without any preconcentration step. Relative standard deviation (RSD) of less than 1% measured over 10 runs has been found for the -0.47 V peak current showing the very high stability of the electrode without any significant fouling effect. An interference study with nitro aromatic compounds of the same family (nitro toluene and dinitrotoluene) has shown that the -0.47 V reduction peak enables TNT discrimination. Measurement of TNT in a natural medium (sea water without any purification step except filtering) has been also investigated.

  20. Magnetic and cytotoxic properties of hot-filament chemical vapour deposited diamond

    Energy Technology Data Exchange (ETDEWEB)

    Zanin, Hudson, E-mail: hudsonzanin@gmail.com [Faculdade de Engenharia Eletrica e Computacao, Departamento de Semicondutores, Instrumentos e Fotonica, Universidade Estadual de Campinas, UNICAMP, Av. Albert Einstein N.400, CEP 13 083-852 Campinas, Sao Paulo (Brazil); Peterlevitz, Alfredo Carlos; Ceragioli, Helder Jose [Faculdade de Engenharia Eletrica e Computacao, Departamento de Semicondutores, Instrumentos e Fotonica, Universidade Estadual de Campinas, UNICAMP, Av. Albert Einstein N.400, CEP 13 083-852 Campinas, Sao Paulo (Brazil); Rodrigues, Ana Amelia; Belangero, William Dias [Laboratorio de Biomateriais em Ortopedia, Faculdade de Ciencias Medicas, Universidade Estadual de Campinas, Rua Cinco de Junho 350 CEP 13083970, Campinas, Sao Paulo (Brazil); Baranauskas, Vitor [Faculdade de Engenharia Eletrica e Computacao, Departamento de Semicondutores, Instrumentos e Fotonica, Universidade Estadual de Campinas, UNICAMP, Av. Albert Einstein N.400, CEP 13 083-852 Campinas, Sao Paulo (Brazil)

    2012-12-01

    Microcrystalline (MCD) and nanocrystalline (NCD) magnetic diamond samples were produced by hot-filament chemical vapour deposition (HFCVD) on AISI 316 substrates. Energy Dispersive X-ray Spectroscopy (EDS) measurements indicated the presence of Fe, Cr and Ni in the MCD and NCD samples, and all samples showed similar magnetisation properties. Cell viability tests were realised using Vero cells, a type of fibroblastic cell line. Polystyrene was used as a negative control for toxicity (NCT). The cells were cultured under standard cell culture conditions. The proliferation indicated that these magnetic diamond samples were not cytotoxic. - Highlights: Black-Right-Pointing-Pointer Polycrystalline diamonds doped with Fe, Cr and Ni acquire ferromagnetic properties. Black-Right-Pointing-Pointer CVD diamonds have been prepared with magnetic and semiconductor properties. Black-Right-Pointing-Pointer Micro/nanocrystalline diamonds show good cell viability with fibroblast proliferation.

  1. p+-n--n+-type power diode with crystalline/nanocrystalline Si mosaic electrodes

    Science.gov (United States)

    Wensheng, Wei; Chunxi, Zhang

    2016-06-01

    Using p+-type crystalline Si with n+-type nanocrystalline Si (nc-Si) and n+-type crystalline Si with p+-type nc-Si mosaic structures as electrodes, a type of power diode was prepared with epitaxial technique and plasma-enhanced chemical vapor deposition (PECVD) method. Firstly, the basic p+-n--n+-type Si diode was fabricated by epitaxially growing p+- and n+-type layers on two sides of a lightly doped n--type Si wafer respectively. Secondly, heavily phosphorus-doped Si film was deposited with PECVD on the lithography mask etched p+-type Si side of the basic device to form a component with mosaic anode. Thirdly, heavily boron-doped Si film was deposited on the etched n+-type Si side of the second device to form a diode with mosaic anode and mosaic cathode. The images of high resolution transmission electronic microscope and patterns of X-ray diffraction reveal nanocrystallization in the phosphorus- and boron-deposited films. Electrical measurements such as capacitance-voltage relation, current-voltage feature and reverse recovery waveform were carried out to clarify the performance of prepared devices. The important roles of (n-)Si/(p+)nc-Si and (n-)Si/(n+)nc-Si junctions in the static and dynamic conduction processes in operating diodes were investigated. The performance of mosaic devices was compared to that of a basic one. Project supported by the National Natural Science Foundation of China (No. 61274006).

  2. Growth and tribological properties of diamond films on silicon and tungsten carbide substrates

    Science.gov (United States)

    Radhika, R.; Ramachandra Rao, M. S.

    2016-11-01

    Hot filament chemical vapor deposition technique was used to deposit microcrystalline diamond (MCD) and nanocrystalline diamond (NCD) films on silicon (Si) and tungsten carbide (WC-6Co) substrates. Friction coefficient of larger diamond grains deposited on WC-6Co substrate shows less value approximately 0.2 while this differs marginally on films grown on Si substrate. The study claims that for a less friction coefficient, the grain size is not necessarily smaller. However, the less friction coefficient (less than 0.1 saturated value) in MCD and NCD deposited on Si is explained by the formation of graphitized tribolayer. This layer easily forms when diamond phase is thermodynamically unstable.

  3. Electronic and physico-chemical properties of nanometric boron delta-doped diamond structures

    Energy Technology Data Exchange (ETDEWEB)

    Chicot, G., E-mail: gauthier.chicot@neel.cnrs.fr; Fiori, A.; Tran Thi, T. N.; Bousquet, J.; Delahaye, J.; Grenet, T.; Eon, D.; Omnès, F.; Bustarret, E. [Université Grenoble Alpes, Institut NEEL, 38042 Grenoble (France); CNRS, Institut NEEL, 38042 Grenoble (France); Volpe, P. N.; Tranchant, N.; Mer-Calfati, C.; Arnault, J. C. [CEA, LIST, Diamond Sensors Laboratory, 91191 Gif-sur-Yvette (France); Gerbedoen, J. C.; Soltani, A.; De Jaeger, J. C. [IEMN, UMR-CNRS 8520, Avenue Poincaré, Université de Lille 1, 59652 Villeneuve d' Ascq (France); Alegre, M. P.; Piñero, J. C.; Araújo, D. [Dpto Ciencia de los Materiales, Facultad de Ciencias, Universidad de Cádiz, 11510 Puerto Real (Cádiz) (Spain); Jomard, F. [Groupe d' Étude de la Matière Condensée (GEMaC), UMR 8635 du CNRS, UVSQ, 45 Avenue des États-Unis, 78035 Versailles Cedex (France); and others

    2014-08-28

    Heavily boron doped diamond epilayers with thicknesses ranging from 40 to less than 2 nm and buried between nominally undoped thicker layers have been grown in two different reactors. Two types of [100]-oriented single crystal diamond substrates were used after being characterized by X-ray white beam topography. The chemical composition and thickness of these so-called delta-doped structures have been studied by secondary ion mass spectrometry, transmission electron microscopy, and spectroscopic ellipsometry. Temperature-dependent Hall effect and four probe resistivity measurements have been performed on mesa-patterned Hall bars. The temperature dependence of the hole sheet carrier density and mobility has been investigated over a broad temperature range (6 K < T < 450 K). Depending on the sample, metallic or non-metallic behavior was observed. A hopping conduction mechanism with an anomalous hopping exponent was detected in the non-metallic samples. All metallic delta-doped layers exhibited the same mobility value, around 3.6 ± 0.8 cm{sup 2}/Vs, independently of the layer thickness and the substrate type. Comparison with previously published data and theoretical calculations showed that scattering by ionized impurities explained only partially this low common value. None of the delta-layers showed any sign of confinement-induced mobility enhancement, even for thicknesses lower than 2 nm.

  4. The Use of Diamond for Energy Conversion System Applications: A Review

    Directory of Open Access Journals (Sweden)

    K. I. B. Eguiluz

    2012-01-01

    Full Text Available Catalytic layers of polymer electrolyte membrane fuel cell (PEMFC electrodes are usually composed of platinum nanoparticles dispersed on an electron conductive carbon support, which can undergo several degradation processes like dissolution of Pt and carbon corrosion under PEMFC working conditions. In this context, the major advantage of conductive boron-doped diamond (BDD surfaces is their mechanical and chemical stability. BDD is also considered as a good substrate for studying the intrinsic properties of deposited catalysts, avoiding some problems encountered with other substrates, that is, surface corrosion, oxide formation, or electronic interactions with the deposit. Thus, the first part of this review summarized the surface modification of BDD materials, with emphasis in different techniques, to improve the catalytic efficiency of supported catalysts for PEMFCs. In addition, it is known that graphite carbon or lithium metal alloys used in advanced lithium-ion high-energy batteries suffer morphological changes during the charge-discharge cycling, which in turn results in a very poor cycle life. Thus, the use of diamond materials in these applications was also reviewed, since they have very stable surfaces and exhibits excellent electrochemical properties when compared with other carbon forms like glassy carbon and highly oriented pyrolytic graphite.

  5. A diamond-based electrode for detection of neurochemicals in the human brain

    Directory of Open Access Journals (Sweden)

    Kevin E. Bennet

    2016-03-01

    Full Text Available Deep brain stimulation (DBS, a surgical technique to treat certain neurologic and psychiatric conditions, relies on pre-determined stimulation parameters in an open-loop configuration. The major advancement in DBS devices is a closed-loop system that uses neurophysiologic feedback to dynamically adjust stimulation frequency and amplitude. Stimulation-driven neurochemical release can be measured by fast-scan cyclic voltammetry (FSCV, but existing FSCV electrodes rely on carbon fiber, which degrades quickly during use and is therefore unsuitable for chronic neurochemical recording. To address this issue, we developed durable, synthetic boron-doped diamond-based electrodes capable of measuring neurochemical release in humans. Compared to carbon fiber electrodes, they were more than two orders-of-magnitude more physically-robust and demonstrated longevity in vitro without deterioration. Applied for the first time in humans, diamond electrode recordings from thalamic targets in patients (n=4 undergoing DBS for tremor produced signals consistent with adenosine release at a sensitivity comparable to carbon fiber electrodes.

  6. Size-induced enhancement of bulk modulus and transition pressure of nanocrystalline Ge

    DEFF Research Database (Denmark)

    Wang, Hua; Liu, J.F.; He, Yongqi;

    2007-01-01

    In situ energy dispersive X-ray diffraction measurements with synchrotron radiation source have been performed on nanocrystalline Ge with particle sizes 13, 49 and 100 nm by using diamond anvil cell. Whereas the percentage volume collapse at the transition is almost constant, the values of the bulk...

  7. Photo-stimulated low electron temperature high current diamond film field emission cathode

    Science.gov (United States)

    Shurter; Roger Philips , Devlin; David James , Moody; Nathan Andrew , Taccetti; Jose Martin , Russell; Steven John

    2012-07-24

    An electron source includes a back contact surface having a means for attaching a power source to the back contact surface. The electron source also includes a layer comprising platinum in direct contact with the back contact surface, a composite layer of single-walled carbon nanotubes embedded in platinum in direct contact with the layer comprising platinum. The electron source also includes a nanocrystalline diamond layer in direct contact with the composite layer. The nanocrystalline diamond layer is doped with boron. A portion of the back contact surface is removed to reveal the underlying platinum. The electron source is contained in an evacuable container.

  8. Analyzing the performance of diamond-coated micro end mills.

    Energy Technology Data Exchange (ETDEWEB)

    Torres, C. D.; Heaney, P. J.; Sumant, A. V.; Hamilton, M. A.; Carpick, R. W.; Pfefferkorn, F. E.; Univ. of Wisconsin at Madison; Univ. of Pennsylvania

    2009-06-01

    A method is presented to improve the tool life and cutting performance of 300 {micro}m diameter tungsten carbide (WC) micro end mills by applying thin (<300 nm) fine-grained diamond (FGD) and nanocrystalline diamond (NCD) coatings using the hot-filament chemical vapor deposition (HF-CVD) process. The performance of the diamond-coated tools has been evaluated by comparing their performance in dry slot milling of 6061-T6 aluminum against uncoated WC micro end mills. Tool wear, coating integrity, and chip morphology were characterized using SEM and white light interferometry. The initial test results show a dramatic improvement in the tool integrity (i.e., corners not breaking off), a lower wear rate, no observable adhesion of aluminum to the diamond-coated tool, and a significant reduction in the cutting forces (>50%). Reduction of the cutting forces is attributed to the low friction and adhesion of the diamond coating. However, approximately 80% of the tools coated with the larger FGD coatings failed during testing due to delamination. Additional machining benefits were attained for the NCD films, which was obtained by using a higher nucleation density seeding process for diamond growth. This process allowed for thinner, smaller grained diamond coatings to be deposited on the micro end mills, and enabled continued operation of the tool even after the integrity of the diamond coating had been compromised. As opposed to the FGD-coated end mills, only 40% of the NCD-tools experienced delamination issues.

  9. Creating bulk nanocrystalline metal.

    Energy Technology Data Exchange (ETDEWEB)

    Fredenburg, D. Anthony (Georgia Institute of Technology, Atlanta, GA); Saldana, Christopher J. (Purdue University, West Lafayette, IN); Gill, David D.; Hall, Aaron Christopher; Roemer, Timothy John (Ktech Corporation, Albuquerque, NM); Vogler, Tracy John; Yang, Pin

    2008-10-01

    Nanocrystalline and nanostructured materials offer unique microstructure-dependent properties that are superior to coarse-grained materials. These materials have been shown to have very high hardness, strength, and wear resistance. However, most current methods of producing nanostructured materials in weapons-relevant materials create powdered metal that must be consolidated into bulk form to be useful. Conventional consolidation methods are not appropriate due to the need to maintain the nanocrystalline structure. This research investigated new ways of creating nanocrystalline material, new methods of consolidating nanocrystalline material, and an analysis of these different methods of creation and consolidation to evaluate their applicability to mesoscale weapons applications where part features are often under 100 {micro}m wide and the material's microstructure must be very small to give homogeneous properties across the feature.

  10. Synthesis and Characterization of Multilayered Diamond Coatings for Biomedical Implants

    Directory of Open Access Journals (Sweden)

    Leigh Booth

    2011-05-01

    Full Text Available With incredible hardness and excellent wear-resistance, nanocrystalline diamond (NCD coatings are gaining interest in the biomedical community as articulating surfaces of structural implant devices. The focus of this study was to deposit multilayered diamond coatings of alternating NCD and microcrystalline diamond (MCD layers on Ti-6Al-4V alloy surfaces using microwave plasma chemical vapor deposition (MPCVD and validate the multilayer coating’s effect on toughness and adhesion. Multilayer samples were designed with varying NCD to MCD thickness ratios and layer numbers. The surface morphology and structural characteristics of the coatings were studied with X-ray diffraction (XRD, Raman spectroscopy, and atomic force microscopy (AFM. Coating adhesion was assessed by Rockwell indentation and progressive load scratch adhesion tests. Multilayered coatings shown to exhibit the greatest adhesion, comparable to single-layered NCD coatings, were the multilayer samples having the lowest average grain sizes and the highest titanium carbide to diamond ratios.

  11. Deformation in nanocrystalline metals

    OpenAIRE

    Helena Van Swygenhoven; Julia R. Weertman

    2006-01-01

    It is now possible to synthesize polycrystalline metals made up of grains that average less than 100 nm in size. Such nanocrystalline metals contain a significant volume fraction of interfacial regions separated by nearly perfect crystals. The small sizes involved limit the conventional operation of dislocation sources and thus a fundamental question arises: how do these materials deform plastically? We review the current views on deformation mechanisms in nanocrystalline, face-centered cubic...

  12. Diffusion in nanocrystalline solids

    OpenAIRE

    Chadwick, Alan V.

    2016-01-01

    Enhanced atomic migration was an early observation from experimental studies into nanocrystalline solids. This contribution presents an overview of the available diffusion data for simple metals and ionic materials in nanocrystalline form. It will be shown that enhanced diffusion can be interpreted in terms of atomic transport along the interfaces, which are comparable to grain boundaries in coarse-grained analogues. However, the method of sample preparation is seen to play a major role in...

  13. High vacuum tribology of polycrystalline diamond coatings

    Indian Academy of Sciences (India)

    Awadesh K Mallik; S A Shivashankar; S K Biswas

    2009-10-01

    Polycrystalline diamond coatings have been grown on unpolished side of Si(100) wafers by hot filament chemical vapour deposition process. The morphology of the grown coatings has been varied from cauliflower morphology to faceted morphology by manipulation of the growth temperature from 700°C to 900°C and methane gas concentration from 3% to 1·5%. It is found that the coefficient of friction of the coatings under high vacuum of 133·32 × 10-7 Pa (10-7 torr) with nanocrystalline grains can be manipulated to 0·35 to enhance tribological behaviour of bare Si substrates.

  14. Combined effect of nitrogen doping and nanosteps on microcrystalline diamond films for improvement of field emission

    Energy Technology Data Exchange (ETDEWEB)

    Mengui, U.A., E-mail: ursulamengui@gmail.com [INPE – Instituto Nacional de Pesquisas Espaciais Laboratório Associado de Sensores e Materiais – LAS, Av. dos Astronautas 1758, CP 515, CEP 12.245-970, São José dos Campos, SP (Brazil); Campos, R.A.; Alves, K.A.; Antunes, E.F. [INPE – Instituto Nacional de Pesquisas Espaciais Laboratório Associado de Sensores e Materiais – LAS, Av. dos Astronautas 1758, CP 515, CEP 12.245-970, São José dos Campos, SP (Brazil); Hamanaka, M.H.M.O. [Centro de Tecnologia da Informação Renato Archer, Divisão de Superfícies de Interação e Displays, Rodovia D. Pedro I (SP 65) km 143.6, CP 6162, CEP 13089-500, Campinas, SP (Brazil); Corat, E.J.; Baldan, M.R. [INPE – Instituto Nacional de Pesquisas Espaciais Laboratório Associado de Sensores e Materiais – LAS, Av. dos Astronautas 1758, CP 515, CEP 12.245-970, São José dos Campos, SP (Brazil)

    2015-04-15

    Highlights: • Hot filament chemical vapor deposition using methane, hydrogen and a solution of urea in methanol produced nitrogen-doped diamond films. • Diamonds had the grain morphology changed for long growth time (28 h), and the nitrogen doping were evaluated by Raman spectroscopy. • Field emission characterization shows a decrease up to 70% in threshold field, related to reference diamond layer. - Abstract: Nitrogen-doped microcrystalline diamond (N-MCD) films were grown on Si substrates using a hot filament reactor with methanol solution of urea as N source. Electrostatic self-assembly seeding of nanocrystalline diamond were used to obtain continuous and uniform films. Simultaneous changes in grains morphology and work function of diamond by nitrogen doping decreased the threshold field and the angular coefficient of Fowler–Nordhein plots. The field emission properties of our N-MCD films are comparable to carbon nanotube films.

  15. Development of a templated approach to fabricate diamond patterns on various substrates.

    Science.gov (United States)

    Shimoni, Olga; Cervenka, Jiri; Karle, Timothy J; Fox, Kate; Gibson, Brant C; Tomljenovic-Hanic, Snjezana; Greentree, Andrew D; Prawer, Steven

    2014-06-11

    We demonstrate a robust templated approach to pattern thin films of chemical vapor deposited nanocrystalline diamond grown from monodispersed nanodiamond (mdND) seeds. The method works on a range of substrates, and we herein demonstrate the method using silicon, aluminum nitride (AlN), and sapphire substrates. Patterns are defined using photo- and e-beam lithography, which are seeded with mdND colloids and subsequently introduced into microwave assisted chemical vapor deposition reactor to grow patterned nanocrystalline diamond films. In this study, we investigate various factors that affect the selective seeding of different substrates to create high quality diamond thin films, including mdND surface termination, zeta potential, surface treatment, and plasma cleaning. Although the electrostatic interaction between mdND colloids and substrates is the main process driving adherence, we found that chemical reaction (esterification) or hydrogen bonding can potentially dominate the seeding process. Leveraging the knowledge on these different interactions, we optimize fabrication protocols to eliminate unwanted diamond nucleation outside the patterned areas. Furthermore, we have achieved the deposition of patterned diamond films and arrays over a range of feature sizes. This study contributes to a comprehensive understanding of the mdND-substrate interaction that will enable the fabrication of integrated nanocrystalline diamond thin films for microelectronics, sensors, and tissue culturing applications.

  16. Diamond films grown on seeded substrates by hot-filament chemical vapour deposition with H sub 2 as the only feeding gas

    CERN Document Server

    LiuHongWu; Gao Chun Xi; Han Yong; Luo Ji Feng; Zou Guang Tian; Wen Chao

    2002-01-01

    Diamond films have been grown on polished Si substrates seeded with nanocrystalline diamond powder colloid using hot-filament chemical vapour deposition. Instead of using the conventional gaseous carbon source, a carbonized W filament was used as the carbon source. The only feeding gas was hydrogen. Compared with those produced by traditional methods, the polycrystalline diamond grown by this new method has smaller grain size. The growth mechanism is also discussed.

  17. Nanofocusing optics for synchrotron radiation made from polycrystalline diamond.

    Science.gov (United States)

    Fox, O J L; Alianelli, L; Malik, A M; Pape, I; May, P W; Sawhney, K J S

    2014-04-07

    Diamond possesses many extreme properties that make it an ideal material for fabricating nanofocusing x-ray optics. Refractive lenses made from diamond are able to focus x-ray radiation with high efficiency but without compromising the brilliance of the beam. Electron-beam lithography and deep reactive-ion etching of silicon substrates have been used in a transfer-molding technique to fabricate diamond optics with vertical and smooth sidewalls. Latest generation compound refractive lenses have seen an improvement in the quality and uniformity of the optical structures, resulting in an increase in their focusing ability. Synchrotron beamline tests of two recent lens arrays, corresponding to two different diamond morphologies, are described. Focal line-widths down to 210 nm, using a nanocrystalline diamond lens array and a beam energy of E = 11 keV, and 230 nm, using a microcrystalline diamond lens at E = 15 keV, have been measured using the Diamond Light Source Ltd. B16 beamline. This focusing prowess is combined with relatively high transmission through the lenses compared with silicon refractive designs and other diffractive optics.

  18. Kinetics of diamond-silicon reaction under high pressure-high temperature conditions

    Science.gov (United States)

    Pantea, Cristian

    In this dissertation work, the kinetics of the reaction between diamond and silicon at high pressure-high temperature conditions was investigated. This study was motivated by the extremely limited amount of information related to the kinetics of the reaction in diamond-silicon carbide composites formation. It was found that the reaction between diamond and melted silicon and the subsequent silicon carbide formation is a two-stage process. The initial stage is a result of direct reaction of melted silicon with carbon atoms from the diamond surface, the phase boundary reaction. Further growth of SiC is much more complicated and when the outer surfaces of diamond crystals are covered with the silicon carbide layer it involves diffusion of carbon and silicon atoms through the SiC layer. The reaction takes place differently for the two regions of stability of carbon. In the graphite-stable region, the reaction between diamond and melted silicon is associated with the diamond-to-graphite phase transition, while in the diamond-stable region there is no intermediary step for the reaction. The data obtained at HPHT were fitted by the Avrami-Erofeev equation. It was found that the reaction is isotropic, the beta-SiC grown on different faces of the diamond crystals showing the same reaction rate, and that the controlling mechanism for the reaction is the diffusion. In the graphite-stable region the activation energy, 402 kJ/mol is slightly higher than in the diamond-stable region, 260 kJ/mol, as the reaction between diamond and melted silicon is associated with the diamond-to-graphite phase transition, which has higher activation energy. In the diamond-stable region, the calculated activation energy is higher for micron size diamond powders (≈260 kJ/mol), while for nanocrystalline diamond powders a lower value of 170 kJ/mol was obtained. This effect was attributed to nanocrystalline structure and strained bonds within grain boundaries in SiC formed from nanosize diamond

  19. Deformation in nanocrystalline metals

    Directory of Open Access Journals (Sweden)

    Helena Van Swygenhoven

    2006-05-01

    Full Text Available It is now possible to synthesize polycrystalline metals made up of grains that average less than 100 nm in size. Such nanocrystalline metals contain a significant volume fraction of interfacial regions separated by nearly perfect crystals. The small sizes involved limit the conventional operation of dislocation sources and thus a fundamental question arises: how do these materials deform plastically? We review the current views on deformation mechanisms in nanocrystalline, face-centered cubic metals based on insights gained by atomistic computer simulations. These insights are discussed with reference to recent striking experimental observations that can be compared with predictions made by the simulations.

  20. Diamond-coated probe head for measurements in the deep SOL and beyond

    DEFF Research Database (Denmark)

    Schrittwieser, R.; Xu, G. S.; Yan, Ning;

    We have tested two cylindrical graphite probe heads coated by a layer of electrically isolating UNCD (Ultra Nano-Crystalline Diamond) using a CVD (Chemical Vapour Deposition) method. The probe heads were mounted on the reciprocating probe manipulator of the Experimental Advanced Superconducting T...

  1. Mechanism and kinetics of electrochemical degradation of uric acid using conductive-diamond anodes.

    Science.gov (United States)

    Dbira, Sondos; Bensalah, Nasr; Bedoui, Ahmed

    2016-12-01

    Uric acid (UA) is one of the principal effluents of urine wastewaters, widely used in agriculture as fertilizer, which is potentially dangerous and biorefractory. Hence, the degradation of UA (2,6,8-trihydroxy purine) in aqueous solution of pH 3.0 has been studied by conductive-diamond electrochemical oxidation. Hydroxyl radicals formed from water oxidation at the surface of boron-doped diamond anodes were the main oxidizing agents. Effects of current density and supporting electrolyte on the degradation rate and process efficiency are assessed. Results show that the increase of current density from 20 to 60 mA cm(-2) leads to a decrease in the efficiency of the electrochemical process. In addition, the best degradation occurred in the presence of NaCl as conductive electrolyte. Interestingly, an almost total mineralization of 50 ppm UA was obtained when anodic oxidation was performed at low current densities (20 mA cm(-2)) and in the presence of NaCl. This result confirmed that the electrolysis using diamond anodes is a very interesting technology for the treatment of UA. The identification of UA transformation products was performed by high-performance liquid chromatography (HPLC). HPLC analysis of treated solutions revealed that oxalic acid and urea were the two intermediates found. Oxalic acid was the most persistent product. Based on detected intermediates and bibliographic research, a mechanism of UA mineralization by anodic oxidation has been proposed. Ionic chromatography analysis confirmed the release of [Formula: see text] and [Formula: see text] ions during UA mineralization.

  2. Effect of the chemical termination of conductive diamond substrate on the resistance to carbon monoxide-poisoning during methanol oxidation of platinum particles

    Science.gov (United States)

    Spătaru, Tanţa; Osiceanu, Petre; Anastasescu, Mihai; Pătrinoiu, Greta; Munteanu, Cornel; Spătaru, Nicolae; Fujishima, Akira

    2014-09-01

    Boron-doped diamond (BDD) films were annealed in hydrogen or oxygen streams and were further used as substrates for Pt electrochemical deposition. SEM and AFM measurements have shown that, from the point of view of the efficiency of noble metal utilization, a hydrogen-terminated diamond (HT-BDD) support is more convenient because it enables better dispersion and smaller size of the deposited particles. An enhancement of ca. 23% of the electrocatalyst specific surface area was observed for Pt/HT-BDD, compared to the case of Pt deposited at oxygen-terminated diamond (OT-BDD). Nevertheless, it was found that when deposited on oxidized BDD, Pt particles are more resistant to fouling during methanol oxidation. Electrochemical oxidation of adsorbed carbon monoxide was investigated by anodic stripping voltammetry and it was demonstrated that the use of OT-BDD substrate facilitates oxidative desorption of CO from the platinum active sites. This behavior was tentatively ascribed to the high surface concentration of oxygenated carbon species, evidenced by XPS, which may act as oxygen donors and/or could partially weaken Pt-CO bonds, thus enabling easier CO eviction from the electrocatalyst surface.

  3. Relative importance of grain boundaries and size effects in thermal conductivity of nanocrystalline materials.

    Science.gov (United States)

    Dong, Huicong; Wen, Bin; Melnik, Roderick

    2014-11-13

    A theoretical model for describing effective thermal conductivity (ETC) of nanocrystalline materials has been proposed, so that the ETC can be easily obtained from its grain size, single crystal thermal conductivity, single crystal phonon mean free path (PMFP), and the Kaptiza thermal resistance. In addition, the relative importance between grain boundaries (GBs) and size effects on the ETC of nanocrystalline diamond at 300 K has been studied. It has been demonstrated that with increasing grain size, both GBs and size effects become weaker, while size effects become stronger on thermal conductivity than GBs effects.

  4. Diamond at the nanoscale: applications of diamond nanoparticles from cellular biomarkers to quantum computing.

    Science.gov (United States)

    Holt, Katherine B

    2007-12-15

    Although nanocrystalline diamond powders have been produced in industrial quantities, mainly by detonation synthesis, for many decades their use in applications other than traditional polishing and grinding have been limited, until recently. This paper presents the wide-ranging applications of nanodiamond particles to date and discusses future research directions in this field. Owing to the recent commercial availability of these powders and the present interest in nanotechnology, one can predict a huge increase in research with these materials in the very near future. However, to fully exploit these materials, fundamental as well as applied research is required to understand the transition between bulk and surface properties as the size of particles decreases.

  5. Boron-doped Graphene as Interlayer for Lithium-Sulfur Batteries%硼掺杂石墨烯用作锂硫电池夹层材料的研究

    Institute of Scientific and Technical Information of China (English)

    王璐

    2016-01-01

    Boron doped graphene (BGE) was fabricated from pyrolyzation of boric acid and reduced graphene oxide (rGO) and employed as the interlayer between sulfur cathode and separator. Research results were abtained that boron atom had been introduced into graphene skeleton, and improved the rate performance of~500 mAh/g capacity at 10C.%将硼酸和还原氧化石墨烯在高温下热解,制得硼掺杂石墨烯BGE,并用于硫正极和隔膜之间的夹层材料。形貌结构表征证明,硼原子被成功掺杂到石墨烯结构中。电化学测试表明,BGE夹层提高了电极导电性。得益于其对多硫化物的物理拦截和化学吸附功能特点,BGE夹层的采用提高了电池的倍率性能,取得了在10C下500 mAh·g-1的放电比容量。

  6. Nanocrystalline and Nanoporous Ceramics

    NARCIS (Netherlands)

    Verweij, Henk

    1996-01-01

    Nanocrystalline and nanoporous ceramics, renowned for their special transport properties, have typical applications in the fields of energy, the environment, and separation technology. One example is a solid oxide fuel cell, where an anode with improved characteristics was obtained by an optimized n

  7. Nanocrystalline Heterojunction Materials

    Science.gov (United States)

    Elder, Scott H.; Su, Yali; Gao, Yufei; Heald, Steve M.

    2004-02-03

    Mesoporous nanocrystalline titanium dioxide heterojunction materials and methods of making the same are disclosed. In one disclosed embodiment, materials comprising a core of titanium dioxide and a shell of a molybdenum oxide exhibit a decrease in their photoadsorption energy as the size of the titanium dioxide core decreases.

  8. Simulation optimization of filament parameters for uniform depositions of diamond films on surfaces of ultra-large circular holes

    Science.gov (United States)

    Wang, Xinchang; Shen, Xiaotian; Sun, Fanghong; Shen, Bin

    2016-12-01

    Chemical vapor deposition (CVD) diamond films have been widely applied as protective coatings on varieties of anti-frictional and wear-resistant components, owing to their excellent mechanical and tribological properties close to the natural diamond. In applications of some components, the inner hole surface will serve as the working surface that suffers severe frictional or erosive wear. It is difficult to realize uniform depositions of diamond films on surfaces of inner holes, especially ultra-large inner holes. Adopting a SiC compact die with an aperture of V80 mm as an example, a novel filament arrangement with a certain number of filaments evenly distributed on a circle is designed, and specific effects of filament parameters, including the filament number, arrangement direction, filament temperature, filament diameter, circumradius and the downward translation, on the substrate temperature distribution are studied by computational fluid dynamics (CFD) simulations based on the finite volume method (FVM), adopting a modified computational model well consistent with the actual deposition environment. Corresponding temperature measurement experiments are also conducted to verify the rationality of the computational model. From the aspect of depositing uniform boron-doped micro-crystalline, undoped micro-crystalline and undoped fine-grained composite diamond (BDM-UMC-UFGCD) film on such the inner hole surface, filament parameters as mentioned above are accurately optimized and compensated by orthogonal simulations. Moreover, deposition experiments adopting compensated optimized parameters and some typical contrastive parameters are also accomplished for further verifying the rationality of the computational model and the correctness of the compensation coefficient 0.7 defined for the downward translation determined by simulations. More importantly, on the basis of more simulations and verification tests, a general filament arrangement model suitable for V50-120 mm

  9. Stratigraphy of a diamond epitaxial three-dimensional overgrowth using doping superlattices

    Science.gov (United States)

    Lloret, F.; Fiori, A.; Araujo, D.; Eon, D.; Villar, M. P.; Bustarret, E.

    2016-05-01

    The selective doped overgrowth of 3D mesa patterns and trenches has become an essential fabrication step of advanced monolithic diamond-based power devices. The methodology here proposed combines the overgrowth of plasma-etched cylindrical mesa structures with the sequential growth of doping superlattices. The latter involve thin heavily boron doped epilayers separating thicker undoped epilayers in a periodic fashion. Besides the classical shape analysis under the scanning electron microscope relying on the appearance of facets corresponding to the main crystallographic directions and their evolution toward slow growing facets, the doping superlattices were used as markers in oriented cross-sectional lamellas prepared by focused ion beam and observed by transmission electron microscopy. This stratigraphic approach is shown here to be applicable to overgrown structures where faceting was not detectable. Intermediate growth directions were detected at different times of the growth process and the periodicity of the superlattice allowed to calculate the growth rates and parameters, providing an original insight into the planarization mechanism. Different configurations of the growth front were obtained for different sample orientations, illustrating the anisotropy of the 3D growth. Dislocations were also observed along the lateral growth fronts with two types of Burger vector: b 01 1 ¯ = /1 2 [ 01 1 ¯ ] and b 112 = /1 6 [ 112 ] . Moreover, the clustering of these extended defects in specific regions of the overgrowth prompted a proposal of two different dislocation generation mechanisms.

  10. Removal of oxyfluorfen from ex-situ soil washing fluids using electrolysis with diamond anodes.

    Science.gov (United States)

    dos Santos, Elisama Vieira; Sáez, Cristina; Martínez-Huitle, Carlos Alberto; Cañizares, Pablo; Rodrigo, Manuel Andres

    2016-04-15

    In this research, firstly, the treatment of soil spiked with oxyfluorfen was studied using a surfactant-aided soil-washing (SASW) process. After that, the electrochemical treatment of the washing liquid using boron doped diamond (BDD) anodes was performed. Results clearly demonstrate that SASW is a very efficient approach in the treatment of soil, removing the pesticide completely by using dosages below 5 g of sodium dodecyl sulfate (SDS) per Kg of soil. After that, complete mineralization of organic matter (oxyflourfen, SDS and by-products) was attained (100% of total organic carbon and chemical oxygen demand removals) when the washing liquids were electrolyzed using BDD anodes, but the removal rate depends on the size of the particles in solution. Electrolysis of soil washing fluids occurs via the reduction in size of micelles until their complete depletion. Lower concentrations of intermediates are produced (sulfate, chlorine, 4-(trifluoromethyl)-phenol and ortho-nitrophenol) during BDD-electrolyzes. Finally, it is important to indicate that, sulfate (coming from SDS) and chlorine (coming from oxyfluorfen) ions play an important role during the electrochemical organic matter removal.

  11. Enabling long term monitoring of dopamine using dimensionally stable ultrananocrystalline diamond microelectrodes

    Science.gov (United States)

    Dutta, Gaurab; Tan, Chao; Siddiqui, Shabnam; Arumugam, Prabhu U.

    2016-09-01

    Chronic dopamine (DA) monitoring is a critical enabling technology to identify the neural basis of human behavior. Carbon fiber microelectrodes (CFM), the current gold standard electrode for in vivo fast scan cyclic voltammetry (FSCV), rapidly loses sensitivity due to surface fouling during chronic neural testing. Periodic voltage excursions at elevated anodic potentials regenerate fouled CFM surfaces but they also chemically degrade the CFM surfaces. Here, we compare the dimensional stability of 150 μm boron-doped ultrananocrystalline diamond (BDUNCD) microelectrodes in 1X PBS during ‘electrochemical cleaning’ with a similar-sized CFM. Scanning electron microscopy and Raman spectroscopy confirm the exceptional dimensional stability of BDUNCD after 40 h of FSCV cycling (∼8 million cycles). The fitting of electrochemical impedance spectroscopy data to an appropriate circuit model shows a 2x increase in charge transfer resistance and an additional RC element, which suggests oxidation of BDUNCD electrode surface. This could have likely increased the DA oxidation potential by ∼34% to +308 mV. A 2x increase in BDUNCD grain capacitance and a negligible change in grain boundary impedance suggests regeneration of grains and the exposure of new grain boundaries, respectively. Overall, DA voltammogram signals were reduced by only ∼20%. In contrast, the CFM is completely etched with a ∼90% reduction in the DA signal using the same cleaning conditions. Thus, BDUNCD provides a robust electrode surface that is amenable to repeated and aggressive cleaning which could be used for chronic DA sensing.

  12. Diamond microelectrodes and CMOS microelectronics for wireless transmission of fast-scan cyclic voltammetry.

    Science.gov (United States)

    Roham, Masoud; Halpern, Jeffrey M; Martin, Heidi B; Chiel, Hillel J; Mohseni, Pedram

    2007-01-01

    This paper reports on technology development at the sensor and circuit levels for wireless transmission of fast-scan cyclic voltammetry (FSCV) in neurochemical detection. Heavily conductive, boron-doped diamond is selectively deposited onto the polished tip of a tungsten microelectrode to fabricate versatile, implantable, micro-needle microprobes capable of neurochemical sensing in the brain. In addition, an integrated circuit is fabricated in a 0.5-microm CMOS technology for processing and wireless transmission of the electrochemical signals corresponding to extracellular concentration changes of various neurotransmitters. The chip consists of a current-based, second-order, front-end SigmaDelta ADC and an on-chip, RF-FSK transmitter at the back-end. The ADC core and the transmitter consume 22microA and 400microA, respectively, from a 2.6-V power supply. Major electroactive neurotransmitters such as serotonin and dopamine in micromolar concentration have been wirelessly recorded at 433MHz using 300-V/s FSCV in flow injection analysis experiments.

  13. Optical investigations on the wide bandgap semiconductors diamond and aluminum nitride

    Energy Technology Data Exchange (ETDEWEB)

    Teofilov, Nikolai

    2007-07-01

    In the context of this thesis, new results about optical defects and intrinsic properties of diamond, AlN and AlGaN alloys have been obtained. The main experimental techniques used were low temperature cathodoluminescence and photoluminescence spectroscopy. First, different aspects of intentional and background doping of diamond were discussed. Thus, the most commonly observed green luminescence emission from boron doped HPHT diamonds has been studied by means of temperature dependent CL in a wide temperature range from 10 K to 450 K. One further subject, addressing deep defect nitrogen related luminescence was a study of nitrogen addition in combustion flame grown CVD diamond layers. Two further topics concern intrinsic excitations in diamond, free excitons and electron-hole drops. Several important parameters like the critical density, the critical temperature, and the low-temperature density inside the drops were evaluated. The ground state density of the electron-hole condensate in diamond is about {approx} 42 times larger than that in Si, and the critical temperature takes very high values in the range of 165K.. 173K. Cathodoluminescence investigations on epitaxial wurtzite AlN layers grown on sapphire, SiC, and Si substrates, have shown that although the material is generally of good optical quality, deep level luminescence are still dominating the spectra. Relatively sharp near-band-edge transitions have been observed in all three samples that exhibit significantly reduced line widths for the AlN/sapphire and the AlN/SiC samples. Much broader emission lines in the near band-gap region have been observed for the first time from the AlN sample grown on Si (111) substrate. Temperature dependent CL measurements and numerical line decompositions reveal complicated substructures in the excitonic lines. The temperature dependence of the energy positions and broadening parameters of the transition have been studied and compared with the other materials. Epitaxial Al

  14. APPLIED RESEARCH ON HIGHLY BORON-DOPED DIAMOND ELECTRODES IN ELECTROCHEMISTRY%高硼掺杂金刚石膜电极的电化学应用研究

    Institute of Scientific and Technical Information of China (English)

    胡陈果

    2002-01-01

    概述了高硼掺杂金刚石膜电极的电化学研究的最新进展,介绍了高硼掺杂金刚石膜电极的制备、金刚石膜电极在水介质中的电化学行为、金刚石膜电极在废水处理、微量有机化合物成分探测和蜂窝状金刚石电极双电层电容器方面的应用.

  15. Electroanalysis of uric acid at a boron - doped diamond electrode modified with cysteine%半胱氨酸修饰的掺硼金刚石电极用于尿酸的测定

    Institute of Scientific and Technical Information of China (English)

    李小丽; 吴婧; 沈国励; 俞汝勤

    2006-01-01

    在掺硼金刚石电极表面修饰聚半胱氨酸的电极测定尿酸时抗坏血酸和多巴胺的干扰较低.在方波伏安信号中抗坏血酸或多巴胺与尿酸共存检测时尿酸的特征峰电位变化较小(不超过15 mV),峰电流变化只有几微安培.利用循环伏安法、方波伏安法对比了修饰电极与没有经过修饰的电极对尿酸的响应,试验了扫描速度、方波振幅、pH值等对修饰电极性能的影响.在最优条件下,得到测定尿酸的线性范围为1.45×10-9~1.16×10-6mol/L.在上述定性定量分析的基础上对未经预处理的儿童肾病病人尿样进行了检测,得到了令人满意的结果.

  16. Surface chemical studies of chemical vapour deposited diamond thin films

    CERN Document Server

    Proffitt, S

    2001-01-01

    could not easily be correlated to the bulk film properties. It is suggested that electron emission arises from the graphite component of graphite- diamond grain boundaries that are present in the nanocrystalline films. species. The adsorbed O and Cl species are more strongly bound to the K layer than they are to the diamond substrate, so thermal desorption of K from the K/CI/diamond or K/O/diamond surface results also in the simultaneous loss ofO and Cl. The phosphorus precursor trisdimethylaminophosphine (TDMAP) has a negligible reactive sticking probability on the clean diamond surface. This can be increased by thermal cracking of the gas phase precursor by a heated filament, resulting in non-activated adsorption to produce an adlayer containing a mixture of surface-bound ligands and phosphorus containing species. The ligands were readily lost upon heating, leaving P, some of which was lost from the surface at higher temperatures. Pre-hydrogenation of the diamond surface inhibited the uptake of cracked TDMA...

  17. Diamond heteroepitaxial lateral overgrowth

    Science.gov (United States)

    Tang, Yung-Hsiu

    This dissertation describes improvements in the growth of single crystal diamond by microwave plasma-assisted chemical vapor deposition (CVD). Heteroepitaxial (001) diamond was grown on 1 cm. 2 a-plane sapphiresubstrates using an epitaxial (001) Ir thin-film as a buffer layer. Low-energy ion bombardment of the Ir layer, a process known as bias-enhanced nucleation, is a key step in achieving a high density of diamond nuclei. Bias conditions were optimized to form uniformly-high nucleation densities across the substrates, which led to well-coalesced diamond thin films after short growth times. Epitaxial lateral overgrowth (ELO) was used as a means of decreasing diamond internal stress by impeding the propagation of threading dislocations into the growing material. Its use in diamond growth requires adaptation to the aggressive chemical and thermal environment of the hydrogen plasma in a CVD reactor. Three ELO variants were developed. The most successful utilized a gold (Au) mask prepared by vacuum evaporation onto the surface of a thin heteroepitaxial diamond layer. The Au mask pattern, a series of parallel stripes on the micrometer scale, was produced by standard lift-off photolithography. When diamond overgrows the mask, dislocations are largely confined to the substrate. Differing degrees of confinement were studied by varying the stripe geometry and orientation. Significant improvement in diamond quality was found in the overgrown regions, as evidenced by reduction of the Raman scattering linewidth. The Au layer was found to remain intact during diamond overgrowth and did not chemically bond with the diamond surface. Besides impeding the propagation of threading dislocations, it was discovered that the thermally-induced stress in the CVD diamond was significantly reduced as a result of the ductile Au layer. Cracking and delamination of the diamond from the substrate was mostly eliminated. When diamond was grown to thicknesses above 0.1 mm it was found that

  18. Diamond Synthesis Employing Nanoparticle Seeds

    Science.gov (United States)

    Uppireddi, Kishore (Inventor); Morell, Gerardo (Inventor); Weiner, Brad R. (Inventor)

    2014-01-01

    Iron nanoparticles were employed to induce the synthesis of diamond on molybdenum, silicon, and quartz substrates. Diamond films were grown using conventional conditions for diamond synthesis by hot filament chemical vapor deposition, except that dispersed iron oxide nanoparticles replaced the seeding. This approach to diamond induction can be combined with dip pen nanolithography for the selective deposition of diamond and diamond patterning while avoiding surface damage associated to diamond-seeding methods.

  19. Study on the diamond/ultrafine WC-Co cermets interface formed in a SPS consolidated composite

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    Nanocrystalline WC-Co composite powder and coated tungsten diamond by using vacuum vapor deposition were consolidated by the spark plasma sintering (SPS) process to prepare diamond-enhanced WC-Co cemented carbide composite materials. The interface microstructures between coated tungsten diamond and WC-Co cemented carbide matrix were investigated by scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDXS). The results showed that there is a transitional layer between the diamond and the matrix, in which the carbon content is 62.97wt.%, and the content of cobalt in the transitional zone is 6.19wt.%; the content of cobalt in the WC-Co cemented carbide matrix is 6.07wt.%, in which the carbon content is 15.95wt.%, and the content of cobalt on the surface of diamond is 7.30wt.%, in which the carbon content is 80.38wt.%. The transitional zone prevents the carbon atom of the diamond from spreading to the matrix, in which the carbon content does coincide with the theoretical value of the raw nanocomposite powders, and the carbon content forms a graded distribution among the matrix, transitional zone, and the surface of diamond; after the 1280℃ SPS consolidated process the diamond still maintains a very good crystal shape, the coated tungsten on the surface of the diamond improves thermal stability of the diamond and increases the bonding strength of the interface between the diamond and the matrix.

  20. Structural Phase Transformations of ZnS Nanocrystalline Under High Pressure

    Institute of Scientific and Technical Information of China (English)

    潘跃武; 曲胜春; 高春晓; 韩永昊; 骆继锋; 崔启良; 刘景; 邹广田

    2004-01-01

    In-situ energy dispersive x-ray diffraction on ZnS nanocrystalline was carried out under high pressure by using a diamond anvil cell. Phase transition of wurtzite of 10nm ZnS to rocksalt occurred at 16.0GPa, which was higher than that of the bulk materials. The structures of ZnS nanocrystalline at different pressures were built by using materials studio and the bulk modulus, and the pressure derivative of ZnS nanocrystalline were derived by fitting the equation of Birch-Murnaghan. The resulting modulus was higher than that of the corresponding bulk material, which indicates that the nanomaterial has higher hardness than its bulk materials.

  1. A Comparative Study of Three Different Chemical Vapor Deposition Techniques of Carbon Nanotube Growth on Diamond Films

    Science.gov (United States)

    2013-01-01

    1187–1194, 2010. [28] L. T. Sun, J. L. Gong , Z. Y. Zhu et al., “Nanocrystalline diamond from carbon nanotubes,” Applied Physics Letters, vol. 84, no. 15...pp. 759–760, 1994. [33] G. Zhang, P. Qi , X. Wang et al., “Hydrogenation and hydro- carbonation and etching of single-walled carbon nanotubes,” Journal

  2. Diamond tool machining of materials which react with diamond

    Science.gov (United States)

    Lundin, Ralph L.; Stewart, Delbert D.; Evans, Christopher J.

    1992-01-01

    Apparatus for the diamond machining of materials which detrimentally react with diamond cutting tools in which the cutting tool and the workpiece are chilled to very low temperatures. This chilling halts or retards the chemical reaction between the workpiece and the diamond cutting tool so that wear rates of the diamond tool on previously detrimental materials are comparable with the diamond turning of materials which do not react with diamond.

  3. Optical engineering of diamond

    CERN Document Server

    Rabeau, James R

    2013-01-01

    This is the first comprehensive book on the engineering of diamond optical devices. It will give readers an up-to-date account of the properties of optical quality synthetic diamond (single crystal, nanodiamond and polycrystalline) and reviews the large and growing field of engineering of diamond-based optical devices, with applications in quantum computation, nano-imaging, high performance lasers, and biomedicine. It aims to provide scientists, engineers and physicists with a valuable resource and reference book for the design and performance of diamond-based optical devices.

  4. Radiation Hard 3D Diamond Sensors for Vertex Detectors at HL-LHC

    CERN Document Server

    AUTHOR|(INSPIRE)INSPIRE-00336619; Grosse-Knetter, Jörn; Weingarten, Jens

    Diamond is a good candidate to replace silicon as sensor material in the innermost layer of a tracking detector at HL-LHC, due to its high radiation tolerance. After particle fluences of $10^{16}\\,{\\rm protons/cm^2}$, diamond sensors are expected to achieve a higher signal to noise ratio than silicon. In order to use low grade polycrystalline diamonds as sensors, electrodes inside the diamond bulk, so called 3D electrodes, are produced. Typically, this kind of diamond material has a lower charge collection distance (CCD) than higher grade diamond, which results in a decreased signal amplitude. With 3D electrodes it is possible to achieve full charge collection even in samples with low CCDs by decoupling the spacing of the electrodes from the thickness of the diamond bulk. The electrodes are produced using a femtosecond laser, which changes the phase of the diamond material. The phase changed material is conductive and identified as nanocrystalline graphite using Raman spectroscopy. Due to a crater like struct...

  5. Nanodiamond films deposited at moderate temperature on pure titanium substrate pretreated by ultrasonic scratching in diamond powder suspension

    Institute of Scientific and Technical Information of China (English)

    Syed Jawid Askari; Fanxiu Lv; Akhtar Farid; Fengying Wang; Qi He; Zuyuan Zhou

    2006-01-01

    Nanocrystalline diamond (NCD) film deposition on pure titanium and Ti alloys is extraordinarily difficult because of the high diffusion coefficient of carbon in Ti, the large mismatch in their thermal expansion coefficients, the complex nature of the interlayer formed during diamond deposition, and the difficulty to achieve very high nucleation density. In this investigation, NCD films were successfully deposited on pure Ti substrate by using a novel substrate pretreatment of ultrasonic scratching in a diamond powder-ethanol suspension and by a two-step process at moderate temperature. It was shown that by scratching with a 30-μm diamond suspension for 1 h, followed by a 10-h diamond deposition, a continuous NCD film was obtained with an average grain size of about 200 nm. Detailed experimental results on the preparation, characterization, and successful deposition of the NCD films on Ti were discussed.

  6. Diamond films: Historical perspective

    Energy Technology Data Exchange (ETDEWEB)

    Messier, R. [Pennsylvania State Univ., University Park (United States)

    1993-01-01

    This section is a compilation of notes and published international articles about the development of methods of depositing diamond films. Vapor deposition articles are included from American, Russian, and Japanese publications. The international competition to develop new deposition methodologies is stressed. The current status of chemical vapor deposition of diamond is assessed.

  7. Investing in Diamonds

    NARCIS (Netherlands)

    Renneboog, Luc

    2015-01-01

    This paper examines the risk-return characteristics of investment grade gems (white diamonds, colored diamonds and other types of gems including sapphires, rubies, and emeralds). The transactions are coming from gem auctions and span the period 1999-2012. Over our time frame, the annual nominal USD

  8. Dislocation Dynamics in Nanocrystalline Nickel

    OpenAIRE

    Shan, Z. W.; Wiezorek, J. M. K.; Stach, E. A.; Follstaedt, D. M.; Knapp, J. A.; Mao, S. X.

    2007-01-01

    It is believed that the dynamics of dislocation processes during the deformation of nanocrystalline materials can only be visualized by computational simulations. Here we demonstrate that observations of dislocation processes during the deformation of nanocrystalline Ni with grain sizes as small as 10 nm can be achieved by using a combination of in situ tensile straining and high-resolution transmission electron microscopy. Trapped unit lattice dislocations are observed in strained grains...

  9. Diamond Integrated Optomechanical Circuits

    CERN Document Server

    Rath, Patrik; Nebel, Christoph; Wild, Christoph; Pernice, Wolfram H P

    2013-01-01

    Diamond offers unique material advantages for the realization of micro- and nanomechanical resonators due to its high Young's modulus, compatibility with harsh environments and superior thermal properties. At the same time, the wide electronic bandgap of 5.45eV makes diamond a suitable material for integrated optics because of broadband transparency and the absence of free-carrier absorption commonly encountered in silicon photonics. Here we take advantage of both to engineer full-scale optomechanical circuits in diamond thin films. We show that polycrystalline diamond films fabricated by chemical vapour deposition provide a convenient waferscale substrate for the realization of high quality nanophotonic devices. Using free-standing nanomechanical resonators embedded in on-chip Mach-Zehnder interferometers, we demonstrate efficient optomechanical transduction via gradient optical forces. Fabricated diamond resonators reproducibly show high mechanical quality factors up to 11,200. Our low cost, wideband, carri...

  10. STABLE DIAMOND GRINDING

    Directory of Open Access Journals (Sweden)

    Yury Gutsalenko

    2010-06-01

    Full Text Available The paper generalizes on the one hand theory of kinematic-geometrical simulation of grinding processes by means of tools with working part as binding matrix with abrasive grains located in it in random manner, for example diamond grains, and on the other hand practical performance of combined grinding process, based on introduction of additional energy as electric discharges and called by the organization-developer (Kharkov Polytechnic Institute «diamond-spark grinding» as applied to processing by means of diamond wheel. Implementation of diamond-spark grinding technologies on the basis of developed generalized theoretical approach allows to use the tool with prescribed tool-life, moreover to make the most efficient use of it up to full exhausting of tool-life, determined by diamond-bearing thickness. Development is directed forward computer-aided manufacturing.

  11. Ionoluminescence of diamond, synthetic diamond and simulants

    Energy Technology Data Exchange (ETDEWEB)

    Calvo del Castillo, H. [Departamento de Geologia y Geoquimica, Facultad de Ciencias, Universidad Autonoma de Madrid, Ctra de Colmenar km 15, Madrid 27049 (Spain); Instituto de Fisica, Universidad Nacional Autonoma de Mexico, Circuito de la Investigacion Cientifica s/n, Ciudad Universitaria, Ciudad de Mexico 04519, Mexico, DF (Mexico); Ruvalcaba-Sil, J.L. [Instituto de Fisica, Universidad Nacional Autonoma de Mexico, Circuito de la Investigacion Cientifica s/n, Ciudad Universitaria, Ciudad de Mexico 04519, Mexico, DF (Mexico); Barboza-Flores, M. [Centro de Investigacio en Fisica, Universidad de Sonora, Apartado postal 5-088, Hermosillo, Sonora 83190 (Mexico); Belmont, E. [Instituto de Fisica, Universidad Nacional Autonoma de Mexico, Circuito de la Investigacion Cientifica s/n, Ciudad Universitaria, Ciudad de Mexico 04519, Mexico, DF (Mexico); Calderon, T. [Departamento de Geologia y Geoquimica, Facultad de Ciencias, Universidad Autonoma de Madrid, Ctra de Colmenar km 15, Madrid 27049 (Spain)], E-mail: tomas.calderon@uam.es

    2007-09-21

    Ionoluminescence (IL) spectra of diamond (natural samples and synthetic CVD) and its more common synthetic simulates such as sapphire, spinel, cubic zirconia, strontium titanate and yttrium aluminium garnet (YAG: Er) will be discussed here in order to support some criteria that will allow to distinguish between them. While diamond shows emission bands due to nitrogen defects, simulants feature d-transition metals and rare earths such as Cr{sup 3+}, Mn{sup 2+}, Fe{sup 3+}, Ti{sup 3+} and Er{sup 3+} emissions.

  12. Natural occurrence of pure nano-polycrystalline diamond from impact crater

    Science.gov (United States)

    Ohfuji, Hiroaki; Irifune, Tetsuo; Litasov, Konstantin D.; Yamashita, Tomoharu; Isobe, Futoshi; Afanasiev, Valentin P.; Pokhilenko, Nikolai P.

    2015-10-01

    Consolidated bodies of polycrystalline diamond with grain sizes less than 100 nm, nano-polycrystalline diamond (NPD), has been experimentally produced by direct conversion of graphite at high pressure and high temperature. NPD has superior hardness, toughness and wear resistance to single-crystalline diamonds because of its peculiar nano-textures, and has been successfully used for industrial and scientific applications. Such sintered nanodiamonds have, however, not been found in natural mantle diamonds. Here we identified natural pure NPD, which was produced by a large meteoritic impact about 35 Ma ago in Russia. The impact diamonds consist of well-sintered equigranular nanocrystals (5-50 nm), similar to synthetic NPD, but with distinct [111] preferred orientation. They formed through the martensitic transformation from single-crystal graphite. Stress-induced local fragmentation of the source graphite and subsequent rapid transformation to diamond in the limited time scale result in multiple diamond nucleation and suppression of the overall grain growth, producing the unique nanocrystalline texture of natural NPD. A huge amount of natural NPD is expected to be present in the Popigai crater, which is potentially important for applications as novel ultra-hard material.

  13. Microwave Plasma Chemical Vapor Deposition of Diamond Films on Silicon From Ethanol and Hydrogen

    Institute of Scientific and Technical Information of China (English)

    马志斌; 汪建华; 王传新; 满卫东

    2003-01-01

    Diamond films with very smooth surface and good optical quality have been deposited onto silicon substrate using microwave plasma chemical vapor deposition (MPCVD) from a gas mixture of ethanol and hydrogen at a low substrate temperature of 450 ℃. The effects of the substrate temperature on the diamond nucleation and the morphology of the diamond film have been investigated and observed with scanning electron microscopy (SEM). The microstructure and the phase of the film have been characterized using Raman spectroscopy and X-ray diffraction (XRD). The diamond nucleation density significantly decreases with the increasing of the substrate temperature. There are only sparse nuclei when the substrate temperature is higher than 800 ℃ although the ethanol concentration in hydrogen is very high. That the characteristic diamond peak in the Raman spectrum of a diamond film prepared at a low substrate temperature of 450 ℃ extends into broadband indicates that the film is of nanophase. No graphite peak appeared in the XRD pattern confirms that the film is mainly composed of SP3 carbon. The diamond peak in the XRD pattern also broadens due to the nanocrystalline of the film.

  14. Natural occurrence of pure nano-polycrystalline diamond from impact crater

    Science.gov (United States)

    Ohfuji, Hiroaki; Irifune, Tetsuo; Litasov, Konstantin D.; Yamashita, Tomoharu; Isobe, Futoshi; Afanasiev, Valentin P.; Pokhilenko, Nikolai P.

    2015-01-01

    Consolidated bodies of polycrystalline diamond with grain sizes less than 100 nm, nano-polycrystalline diamond (NPD), has been experimentally produced by direct conversion of graphite at high pressure and high temperature. NPD has superior hardness, toughness and wear resistance to single-crystalline diamonds because of its peculiar nano-textures, and has been successfully used for industrial and scientific applications. Such sintered nanodiamonds have, however, not been found in natural mantle diamonds. Here we identified natural pure NPD, which was produced by a large meteoritic impact about 35 Ma ago in Russia. The impact diamonds consist of well-sintered equigranular nanocrystals (5–50 nm), similar to synthetic NPD, but with distinct [111] preferred orientation. They formed through the martensitic transformation from single-crystal graphite. Stress-induced local fragmentation of the source graphite and subsequent rapid transformation to diamond in the limited time scale result in multiple diamond nucleation and suppression of the overall grain growth, producing the unique nanocrystalline texture of natural NPD. A huge amount of natural NPD is expected to be present in the Popigai crater, which is potentially important for applications as novel ultra-hard material. PMID:26424384

  15. Nanostructured diamond-TiC composites with high fracture toughness

    Science.gov (United States)

    Wang, Haikuo; He, Duanwei; Xu, Chao; Tang, Mingjun; Li, Yu; Dong, Haini; Meng, Chuanmin; Wang, Zhigang; Zhu, Wenjun

    2013-01-01

    We report the preparation of nanostructured diamond-TiC composites with high fracture toughness and high hardness starting from a ball-milled mixture of nano-sized Ti3SiC2 and submicron-sized diamond by simultaneously tuning the pressure-temperature conditions. The phase segregation of Ti3SiC2 at pressure of 5.5 GPa were investigated by X-ray diffraction and high resolution transmission electron microscopy, we found that the Ti3SiC2 could decompose into nanosized TiC and amorphous Ti-Si at 600-700 °C. The subsequent reaction between diamond and Ti-Si led to an amorphous Ti-Si-C matrix in which diamond and TiC crystals are embedded. With a loading force of 98 N, the measured fracture toughness KIC and Vicker's hardness HV of the synthesized composites reach up to 14 MPa m1/2 and 45.5 GPa, respectively. Our results demonstrate that the nanocrystalline/amorphous bonding matrix could largely enhance the toughness of the brittle composites.

  16. Functionalized diamond nanoparticles

    KAUST Repository

    Beaujuge, Pierre M.

    2014-10-21

    A diamond nanoparticle can be functionalized with a substituted dienophile under ambient conditions, and in the absence of catalysts or additional reagents. The functionalization is thought to proceed through an addition reaction.

  17. Diamond nanobeam waveguide optomechanics

    CERN Document Server

    Khanaliloo, Behzad; Hryciw, Aaron C; Lake, David P; Kaviani, Hamidreza; Barclay, Paul E

    2015-01-01

    Optomechanical devices sensitively transduce and actuate motion of nanomechanical structures using light, and are central to many recent fundamental studies and technological advances. Single--crystal diamond promises to improve the performance of optomechanical devices, while also providing opportunities to interface nanomechanics with diamond color center spins and related quantum technologies. Here we demonstrate measurement of diamond nanobeam resonators with a sensitivity of 9.5 fm/Hz^0.5 and bandwidth >120 nm through dissipative waveguide--optomechanical coupling. Nanobeams are fabricated from bulk single--crystal diamond using a scalable quasi--isotropic oxygen plasma undercut etching process, and support mechanical resonances with quality factor of 2.5 x 10^5 at room temperature, and 7.2 x 10^5 in cryogenic conditions (5K). Mechanical self--oscillations, resulting from interplay between optomechanical coupling and the photothermal response of nanobeams in a buckled state, are observed with amplitude e...

  18. Quantum engineering: Diamond envy

    Science.gov (United States)

    Nunn, Joshua

    2013-03-01

    Nitrogen atoms trapped tens of nanometres apart in diamond can now be linked by quantum entanglement. This ability to produce and control entanglement in solid systems could enable powerful quantum computers.

  19. Characterisation of interfaces in nanocrystalline palladium

    Indian Academy of Sciences (India)

    R Divakar; V S Raghunathan

    2003-02-01

    Structures of grain boundaries and triple line junctions in nanocrystalline materials are of interest owing to large fractions of atoms in nanocrystalline materials being at these interfacial positions. Grain boundary and triple line junction structures in nanocrystalline palladium have been studied using high-resolution transmission electron microscopy (HRTEM). The main microstructural features observed include the varying atomic structures of grain boundaries and the presence of disordered regions at triple line junctions. Also, there is variation in lattice parameters in different nanocrystalline grains. Geometric phase analysis is used to quantify atomic displacements within nanocrystalline grains. Displacement fields thus detected indicate links to the interface structures.

  20. XPS analysis of boron doped heterofullerenes

    Energy Technology Data Exchange (ETDEWEB)

    Schnyder, B.; Koetz, R. [Paul Scherrer Inst. (PSI), Villigen (Switzerland); Muhr, H.J.; Nesper, R. [ETH Zurich, Zurich (Switzerland)

    1997-06-01

    Boron heterofullerenes were generated through arc-evaporation of doped graphite rods in a helium atmosphere. According to mass spectrometric analysis only mono-substituted fullerenes like C{sub 59}B, C{sub 69}B and higher homologues together with a large fraction of higher undoped fullerenes were extracted and enriched when pyridine was used as the solvent. XPS analysis of the extracts indicated the presence of two boron species with significantly different binding energies. One peak was assigned to borid acid. The second one corresponds to boron in the fullerene cage, which is mainly C{sub 59}B, according to the mass spectrum. This boron is in a somewhat higher oxidation state than that of ordinary boron-carbon compounds. The reported synthesis and extraction procedure opens a viable route for production of macroscopic amounts of these compounds. (author) 2 figs., 1 tab., 7 refs.

  1. Nanocrystalline magnetic alloys and ceramics

    Indian Academy of Sciences (India)

    M Pal; D Chakravorty

    2003-02-01

    Magnetic properties of materials in their nanocrystalline state have assumed significance in recent years because of their potential applications. A number of techniques have been used to prepare nanocrystalline magnetic phases. Melt spinning, high energy ball milling, sputtering, glassceramization and molecular beam epitaxy are some of the physical methods used so far. Among the chemical methods, sol-gel and co-precipitation routes have been found to be convenient. Ultrafine particles of both ferro- and ferrimagnetic systems show superparamagnetic behaviour at room temperature. Coercivity $(H_c)$ and maximum energy product $(BH)_{\\text{max}}$ of the magnetic particles can be changed by controlling their sizes. The present paper reviews all these aspects in the case of nanocrystalline magnetic systems — both metallic and ceramics.

  2. Cryotribology of diamond and graphite

    Energy Technology Data Exchange (ETDEWEB)

    Iwasa, Yukikazu; Ashaboglu, A.F.; Rabinowicz, E.R. [Francis Bitter Magnet Lab., Cambridge, MA (United States)

    1996-12-31

    An experimental study was carried out on the tribological behavior of materials of interest in cryogenic applications, focusing on diamond and graphite. Both natural diamond (referred in the text as diamond) and chemical-vapor-deposition (CVD) diamond (CVD-diamond) were used. The experiment was carried out using a pin-on-disk tribometer capable of operating at cryogenic temperatures, from 4.2 to 293 K. Two basic scenarios of testing were used: (1) frictional coefficient ({mu}) vs velocity (v) characteristics at constant temperatures; (2) {mu} vs temperature (T) behavior at fixed sliding speeds. For diamond/CVD-diamond, graphite/CVD-diamond, stainless steel/CVD-diamond pairs, {mu}`s are virtually velocity independent. For each of diamond/graphite, alumina/graphite, and graphite/graphite pairs, the {partial_derivative}{mu}/{partial_derivative}v characteristic is favorable, i.e., positive. For diamond/CVD-diamond and graphite/CVD-diamond pairs, {mu}`s are nearly temperature independent between in the range 77 - 293 K. Each {mu} vs T plot for pin materials sliding on graphite disks has a peak at a temperature in the range 100 - 200 K.

  3. An investigation on the pressure-induced phase transition of nanocrystalline ZnS

    CERN Document Server

    Pan Yue Wu; Dong Shu Shan; Cui Qi Liang; Zhang Wei; LiuXiZhe; LiuJing; Liu Bing Bing; Gao Chun Xi; Zou Guang Tian

    2002-01-01

    An in situ energy dispersive x-ray diffraction study on nanocrystalline ZnS was carried out under high pressure up to 30.8 GPa by using a diamond anvil cell. The phase transition from the wurtzite to the zinc-blende structure occurred at 11.5 GPa, and another obvious transition to a new phase with rock-salt structure also appeared at 16.0 GPa - which was higher than the value for the bulk material. The bulk modulus and the pressure derivative of nanocrystalline ZnS were derived by fitting the Birch-Murnaghan equation. The resulting modulus was higher than that of the corresponding bulk material, indicating that the nanomaterial has higher hardness than the bulk material.

  4. A new diamond biosensor with integrated graphitic microchannels for detecting quantal exocytic events from chromaffin cells

    CERN Document Server

    Picollo, Federico; Vittone, Ettore; Pasquarelli, Alberto; Carbone, Emilio; Olivero, Paolo; Carabelli, Valentina

    2013-01-01

    The quantal release of catecholamines from neuroendocrine cells is a key mechanism which has been investigated with a broad range of materials and devices, among which carbon-based materials such as carbon fibers, diamond-like carbon, carbon nanotubes and nanocrystalline diamond. In the present work we demonstrate that a MeV-ion-microbeam lithographic technique can be successfully employed for the fabrication of an all-carbon miniaturized cellular bio-sensor based on graphitic micro-channels embedded in a single-crystal diamond matrix. The device was functionally characterized for the in vitro recording of quantal exocytic events from single chromaffin cells, with high sensitivity and signal-to-noise ratio, opening promising perspectives for the realization of monolithic all-carbon cellular biosensors.

  5. Diamond electronic properties and applications

    CERN Document Server

    Kania, Don R

    1995-01-01

    The use of diamond in electronic applications is not a new idea, but limitations in size and control of properties restricted the use of diamond to a few specialised applications. The vapour-phase synthesis of diamond, however, has facilitated serious interest in the development of diamond-based electronic devices. The process allows diamond films to be laid down over large areas. Both intrinsic and doped diamond films have a unique combination of extreme properties for high speed, high power and high temperature applications. The eleven chapters in Diamond: Electronic Properties and Applications, written by the world's foremost experts on the subject, give a complete characterisation of the material, in both intrinsic and doped forms, explain how to grow it for electronic applications, how to use the grown material, and a description of both passive and active devices in which it has been used with success. Diamond: Electronic Properties and Applications is a compendium of the available literature on the sub...

  6. Diamond pixel modules

    CERN Document Server

    Gan, K K; Robichaud, A; Potenza, R; Kuleshov, S; Kagan, H; Kass, R; Wermes, N; Dulinski, W; Eremin, V; Smith, S; Sopko, B; Olivero, P; Gorisek, A; Chren, D; Kramberger, G; Schnetzer, S; Weilhammer, P; Martemyanov, A; Hugging, F; Pernegger, H; Lagomarsino, S; Manfredotti, C; Mishina, M; Trischuk, W; Dobos, D; Cindro, V; Belyaev, V; Duris, J; Claus, G; Wallny, R; Furgeri, A; Tuve, C; Goldstein, J; Sciortino, S; Sutera, C; Asner, D; Mikuz, M; Lo Giudice, A; Velthuis, J; Hits, D; Griesmayer, E; Oakham, G; Frais-Kolbl, H; Bellini, V; D'Alessandro, R; Cristinziani, M; Barbero, M; Schaffner, D; Costa, S; Goffe, M; La Rosa, A; Bruzzi, M; Schreiner, T; de Boer, W; Parrini, G; Roe, S; Randrianarivony, K; Dolenc, I; Moss, J; Brom, J M; Golubev, A; Mathes, M; Eusebi, R; Grigoriev, E; Tsung, J W; Mueller, S; Mandic, I; Stone, R; Menichelli, D

    2011-01-01

    With the commissioning of the LHC in 2010 and upgrades expected in 2015, ATLAS and CMS are planning to upgrade their innermost tracking layers with radiation hard technologies. Chemical Vapor Deposition diamond has been used extensively in beam conditions monitors as the innermost detectors in the highest radiation areas of BaBar, Belle, CDF and all LHC experiments. This material is now being considered as a sensor material for use very close to the interaction region where the most extreme radiation conditions exist Recently the RD42 collaboration constructed, irradiated and tested polycrystalline and single-crystal chemical vapor deposition diamond sensors to the highest fluences expected at the super-LHC. We present beam test results of chemical vapor deposition diamond up to fluences of 1.8 x 10(16) protons/cm(2) illustrating that both polycrystalline and single-crystal chemical vapor deposition diamonds follow a single damage curve. We also present beam test results of irradiated complete diamond pixel m...

  7. Heteroepitaxial diamond growth

    Science.gov (United States)

    Markunas, R. J.; Rudder, R. A.; Posthill, J. B.; Thomas, R. E.; Hudson, G.

    1994-02-01

    Technical highlights from 1993 include the following: Growth Chemistries: A clear correlation was observed between ionization potential of feedstock gasses and critical power necessary for inductive coupling of the plasma and consequent diamond growth. Substrate preparation and epitaxial film quality: Ion-implantation of C and O has been coupled with either electrochemical etching or acid cleaning for surface preparation prior to homoepitaxial growth. Reactor modifications: Key improvements were made to the RF reactor to allow for long growths to consolidate substrates. Liquid mass flow controllers were added to precisely meter both the water and selected alcohol. Ion-implantation and lift off: Lift off of diamond platelets has been achieved with two processes. Ion-implantation of either C or O followed by annealing and implantation of either C or O followed by water based electrolysis. Diamond characterization: Development of novel detect characterization techniques: (1) Etch delineation of defects by exposure to propane torch flame. (2) Hydrogen plasma exposure to enhance secondary electron emission and provide non-topographical defect contrast. Acetylene will react at room temperature with sites created by partial desorption of oxygen from the (100) diamond surface. Thermal desorption measurements give an apparent activation energy for CO desorption from diamond (100) of 45 kcal/mol. Quantum chemical calculations indicate an activation energy of 38 kcal/mol for CO desorption. Ab initio calculations on (100) surfaces indicates that oxygen adsorbed at one dimer site has an effect on the dimerization of an adjacent site.

  8. A novel Mo-W interlayer approach for CVD diamond deposition on steel

    Energy Technology Data Exchange (ETDEWEB)

    Kundrát, Vojtěch; Sullivan, John; Ye, Haitao, E-mail: h.ye@aston.ac.uk [School of Engineering and Applied Science, Aston University, Birmingham, B4 7ET (United Kingdom); Zhang, Xiaoling; Cooke, Kevin; Sun, Hailin [Miba Coating Group: Teer Coatings Ltd, West-Stone-House, West-Stone, Berry-Hill-Industrial-Estate, WR9 9AS, Droitwich (United Kingdom)

    2015-04-15

    Steel is the most widely used material in engineering for its cost/performance ratio and coatings are routinely applied on its surface to further improve its properties. Diamond coated steel parts are an option for many demanding industrial applications through prolonging the lifetime of steel parts, enhancement of tool performance as well as the reduction of wear rates. Direct deposition of diamond on steel using conventional chemical vapour deposition (CVD) processes is known to give poor results due to the preferential formation of amorphous carbon on iron, nickel and other elements as well as stresses induced from the significant difference in the thermal expansion coefficients of those materials. This article reports a novel approach of deposition of nanocrystalline diamond coatings on high-speed steel (M42) substrates using a multi-structured molybdenum (Mo) – tungsten (W) interlayer to form steel/Mo/Mo-W/W/diamond sandwich structures which overcome the adhesion problem related to direct magnetron sputtering deposition of pure tungsten. Surface, interface and tribology properties were evaluated to understand the role of such an interlayer structure. The multi-structured Mo-W interlayer has been proven to improve the adhesion between diamond films and steel substrates by acting as an effective diffusion barrier during the CVD diamond deposition.

  9. A novel Mo-W interlayer approach for CVD diamond deposition on steel

    Directory of Open Access Journals (Sweden)

    Vojtěch Kundrát

    2015-04-01

    Full Text Available Steel is the most widely used material in engineering for its cost/performance ratio and coatings are routinely applied on its surface to further improve its properties. Diamond coated steel parts are an option for many demanding industrial applications through prolonging the lifetime of steel parts, enhancement of tool performance as well as the reduction of wear rates. Direct deposition of diamond on steel using conventional chemical vapour deposition (CVD processes is known to give poor results due to the preferential formation of amorphous carbon on iron, nickel and other elements as well as stresses induced from the significant difference in the thermal expansion coefficients of those materials. This article reports a novel approach of deposition of nanocrystalline diamond coatings on high-speed steel (M42 substrates using a multi-structured molybdenum (Mo – tungsten (W interlayer to form steel/Mo/Mo-W/W/diamond sandwich structures which overcome the adhesion problem related to direct magnetron sputtering deposition of pure tungsten. Surface, interface and tribology properties were evaluated to understand the role of such an interlayer structure. The multi-structured Mo-W interlayer has been proven to improve the adhesion between diamond films and steel substrates by acting as an effective diffusion barrier during the CVD diamond deposition.

  10. The Shock and Release Behavior of Diamond Compressed to 25 Mbar

    Science.gov (United States)

    Gregor, M. C.

    2016-10-01

    The behavior of carbon at high pressure is important to the study of ice giants and white dwarfs, and because diamond is used as an ablator for inertial confinement fusion (ICF) targets at the National Ignition Facility (NIF). The adiabat of an ICF implosion is determined by a series of shocks that transit the ablator and fuel layer. To accurately model an implosion and design ignition targets, both the Hugoniot and the release behavior of the ablator material must be known. We report on experiments on the OMEGA laser that shocked diamond samples up to 25 Mbar, which then released into reference materials with known Hugoniots (quartz, 200-mg/cm3 SiO2 foam, liquid deuterium, and polystyrene). The impedance-matching technique with these reference materials provided data that constrains release models for diamond. This technique is applied to two forms of diamond: single-crystal and ultra-nanocrystalline diamond (UNCD); the latter is the NIF ablator material. Models for the release isentropes of both types of diamond will be developed using a Mie-Grüneisen equation of state. This study also provided Hugoniot data for UNCD using the impedance-matching technique with a quartz standard. The accuracy of these data was improved by implementing an unsteady wave correction to determine instantaneous shock velocities in the opaque UNCD samples. This material is based upon work supported by the Department of Energy National Nuclear Security Administration under Award Number DE-NA0001944.

  11. Superb nanocrystalline alloys for plating

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    @@ With high rigidity and antiwear performance,nanocrystalline metals and their alloys can find wide applications in surface protection.However, the existence of grain boundaries often leads to erosive micro-batteries which accelerate the process of corrosion.Therefore, it has already become a key issue for surface engineering researchers to find nano materials with higher lubricating, anticorrosion and antiwear capacities.

  12. Low temperature growth of diamond films on optical fibers using Linear Antenna CVD system

    Science.gov (United States)

    Ficek, M.; Drijkoningen, S.; Karczewski, J.; Bogdanowicz, R.; Haenen, K.

    2016-01-01

    It is not trivial to achieve a good quality diamond-coated fibre interface due to a large difference in the properties and composition of the diamond films (or use coating even) and the optical fibre material, i.e. fused silica. One of the biggest problems is the high temperature during the deposition which influences the optical fibre or optical fibre sensor structure (e.g. long-period gratings (LPG)). The greatest advantage of a linear antenna microwave plasma enhanced chemical vapor deposition system (LA MW CVD) is the fact that it allows to grow the diamond layers at low temperature (below 300°C) [1]. High quality nanocrystalline diamond (NCD) thin films with thicknesses ranging from 70 nm to 150 nm, were deposited on silicon, glass and optical fibre substrates [2]. Substrates pretreatment by dip-coating and spin coating process with a dispersion consisting of detonation nanodiamond (DND) in dimethyl sulfoxide (DMSO) with polyvinyl alcohol (PVA) has been applied. During the deposition process the continuous mode of operation of the LA MW CVD system was used, which produces a continuous wave at a maximum power of 1.9 kW (in each antenna). Diamond films on optical fibres were obtained at temperatures below 350°C, providing a clear improvement of results compared to our earlier work [3]. The samples were characterized by scanning electron microscopy (SEM) imaging to investigate the morphology of the nanocrystalline diamond films. The film growth rate, film thickness, and optical properties in the VIS-NIR range, i.e. refractive index and extinction coefficient will be discussed based on measurements on reference quartz plates by using spectroscopic ellipsometry (SE).

  13. Ultra-Smooth Nanostructured Diamond Films Deposited from He/H2/CH4/N2 Microwave Plasmas

    OpenAIRE

    Konovalov, Valery V.; Melo, Andrew; Catledge, Shane A.; Chowdhury, Shafiul; Vohra, Yogesh K.

    2006-01-01

    Addition of He to a high CH4 content (10.7 vol%) H2/CH4/N2 feedgas mixture for microwave plasma chemical vapor deposition produced hard (56–72 GPa), ultra-smooth nanostructured diamond films on Ti-6Al-4V alloy substrates. Upon increase in He content up to 71 vol%, root mean squared (RMS) surface roughness of the film decreased to 9–10 nm and average diamond grain size to 5–6 nm. Our studies show that increased nanocrystallinity with He addition in plasma is related to plasma dilution, enhance...

  14. Diamonds in HD 97048

    CERN Document Server

    Habart, E; Natta, A; Carbillet, M

    2004-01-01

    We present adaptive optics high angular resolution ($\\sim0\\farcs$1) spectroscopic observations in the 3 $\\mu$m region of the Herbig Ae/Be star HD 97048. For the first time, we spatially resolve the emission in the diamond features at 3.43 and 3.53 $\\mu$m and in the adjacent continuum. Using both the intensity profiles along the slit and reconstructed two-dimensional images of the object, we derive full-width at half-maximum sizes consistent with the predictions for a circumstellar disk seen pole-on. The diamond emission originates in the inner region ($R \\lesssim 15$ AU) of the disk.

  15. Diamond Measuring Machine

    Energy Technology Data Exchange (ETDEWEB)

    Krstulic, J.F.

    2000-01-27

    The fundamental goal of this project was to develop additional capabilities to the diamond measuring prototype, work out technical difficulties associated with the original device, and perform automated measurements which are accurate and repeatable. For this project, FM and T was responsible for the overall system design, edge extraction, and defect extraction and identification. AccuGem provided a lab and computer equipment in Lawrence, 3D modeling, industry expertise, and sets of diamonds for testing. The system executive software which controls stone positioning, lighting, focusing, report generation, and data acquisition was written in Microsoft Visual Basic 6, while data analysis and modeling were compiled in C/C++ DLLs. All scanning parameters and extracted data are stored in a central database and available for automated analysis and reporting. The Phase 1 study showed that data can be extracted and measured from diamond scans, but most of the information had to be manually extracted. In this Phase 2 project, all data required for geometric modeling and defect identification were automatically extracted and passed to a 3D modeling module for analysis. Algorithms were developed which automatically adjusted both light levels and stone focus positioning for each diamond-under-test. After a diamond is analyzed and measurements are completed, a report is printed for the customer which shows carat weight, summarizes stone geometry information, lists defects and their size, displays a picture of the diamond, and shows a plot of defects on a top view drawing of the stone. Initial emphasis of defect extraction was on identification of feathers, pinpoints, and crystals. Defects were plotted color-coded by industry standards for inclusions (red), blemishes (green), and unknown defects (blue). Diamonds with a wide variety of cut quality, size, and number of defects were tested in the machine. Edge extraction, defect extraction, and modeling code were tested for

  16. Synthesis of SiV-diamond particulates via the microwave plasma chemical deposition of ultrananocrystalline diamond on soda-lime glass fibers

    Science.gov (United States)

    Kunuku, Srinivasu; Chen, Yen-Chun; Yeh, Chien-Jui; Chang, Wen-Hao; Manoharan, Divinah; Leou, Keh-Chyang; Lin, I.-Nan

    2016-10-01

    We report the synthesis of silicon-vacancy (SiV) incorporated spherical shaped ultrananocrystalline diamond (SiV-UNCD) particulates (size ∼1 μm) with bright luminescence at 738 nm. For this purpose, different granular structured polycrystalline diamond films and particulates were synthesized by using three different kinds of growth plasma conditions on the three types of substrate materials in the microwave plasma enhanced CVD process. The grain size dependent photoluminescence properties of nitrogen vacancy (NV) and SiV color centers have been investigated for different granular structured diamond samples. The luminescence of NV center and the associated phonon sidebands, which are usually observed in microcrystalline diamond and nanocrystalline diamond films, were effectively suppressed in UNCD films and UNCD particulates. Micron sized SiV-UNCD particulates with bright SiV emission has been attained by transfer of SiV-UNCD clusters on soda-lime glass fibers to inverted pyramidal cavities fabricated on Si substrates by the simple crushing of UNCD/soda-lime glass fibers in deionized water and ultrasonication. Such a plasma enhanced CVD process for synthesizing SiV-UNCD particulates with suppressed NV emission is simple and robust to attain the bright SiV-UNCD particulates to employ in practical applications.

  17. Deformation Twinning During Nanoindentation of Nanocrystalline Ta

    OpenAIRE

    Wang, Y. M.; Hodge, A. M.; Biener, J.; Hamza, A.V.; Barnes, D E; Liu, Kai; Nieh, T. G.

    2005-01-01

    The deformation mechanism of body-centered cubic (bcc) nanocrystalline tantalum with grain sizes of 10–30 nm is investigated by nanoindentation, scanning electron microscopy and high-resolution transmission electron microscopy. In a deviation from molecular dynamics simulations and existing experimental observations on other bcc nanocrystalline metals, the plastic deformation of nanocrystalline Ta during nanoindentation is controlled by deformation twinning. The observation of multiple twin i...

  18. CVD diamond - fundamental phenomena

    Energy Technology Data Exchange (ETDEWEB)

    Yarbrough, W.A. [Pennsylvania State Univ., University Park (United States)

    1993-01-01

    This compilation of figures and diagrams addresses the basic physical processes involved in the chemical vapor deposition of diamond. Different methods of deposition are illustrated. For each method, observations are made of the prominent advantages and disadvantages of the technique. Chemical mechanisms of nucleation are introduced.

  19. Diamond growth in mantle fluids

    Science.gov (United States)

    Bureau, Hélène; Frost, Daniel J.; Bolfan-Casanova, Nathalie; Leroy, Clémence; Esteve, Imène; Cordier, Patrick

    2016-11-01

    In the upper mantle, diamonds can potentially grow from various forms of media (solid, gas, fluid) with a range of compositions (e.g. graphite, C-O-H fluids, silicate or carbonate melts). Inclusions trapped in diamonds are one of the few diagnostic tools that can constrain diamond growth conditions in the Earth's mantle. In this study, inclusion-bearing diamonds have been synthesized to understand the growth conditions of natural diamonds in the upper mantle. Diamonds containing syngenetic inclusions were synthesized in multi-anvil presses employing starting mixtures of carbonates, and silicate compositions in the presence of pure water and saline fluids (H2O-NaCl). Experiments were performed at conditions compatible with the Earth's geotherm (7 GPa, 1300-1400 °C). Results show that within the timescale of the experiments (6 to 30 h) diamond growth occurs if water and carbonates are present in the fluid phase. Water promotes faster diamond growth (up to 14 mm/year at 1400 °C, 7 GPa, 10 g/l NaCl), which is favorable to the inclusion trapping process. At 7 GPa, temperature and fluid composition are the main factors controlling diamond growth. In these experiments, diamonds grew in the presence of two fluids: an aqueous fluid and a hydrous silicate melt. The carbon source for diamond growth must be carbonate (CO32) dissolved in the melt or carbon dioxide species in the aqueous fluid (CO2aq). The presence of NaCl affects the growth kinetics but is not a prerequisite for inclusion-bearing diamond formation. The presence of small discrete or isolated volumes of water-rich fluids is necessary to grow inclusion-bearing peridotitic, eclogitic, fibrous, cloudy and coated diamonds, and may also be involved in the growth of ultradeep, ultrahigh-pressure metamorphic diamonds.

  20. Forty years of development in diamond tools

    Science.gov (United States)

    The growth of the diamond industry in Western Countries since the First World War is surveyed. The articles described deal specifically with the development of the industrial diamond and diamond tool sector in different countries. All data point to continuing rapid expansion in the diamond tool sector. The West consumes 80 percent of world industrial diamond production. Diamond consumption increased sharply in the U.S. during World War 2. There are 300 diamond manufacturers in the U.S. today. In 1940, there were 25. In Japan, consumption of industrial diamonds has increased several times. In Italy, there has been a 75 fold increase in the production of diamond tools since 1959.

  1. Tensile behavior of nanocrystalline copper

    Energy Technology Data Exchange (ETDEWEB)

    Sanders, P.G.; Weertman, J.R. [Northwestern Univ., Evanston, IL (United States). Dept. of Materials Science and Engineering; Eastman, J.A. [Northwestern Univ., Evanston, IL (United States). Dept. of Materials Science and Engineering]|[Argonne National Lab., IL (United States). Materials Science Div.

    1995-11-01

    High density nanocrystalline copper produced by inert gas condensation was tested in tension. Displacements were measured using foil strain gauges, which greatly improved the accuracy of the strain data. The Young`s modulus of nanocrystalline copper was found to be consistent with that of coarse-grained copper. Total elongations of {approx} 1% were observed in samples with grain sizes less than 50 nm, while a sample with a grain size of 110 nm exhibited more than 10% elongation, perhaps signifying a change to a dislocation-based deformation mechanism in the larger-grained material. In addition, tensile tests were performed as a function of strain rate, with a possible trend of decreased strength and increased elongation as the strain rate was decreased.

  2. Diamond film deposition on WC-Co and steel substrates with a CrN interlayer for tribological applications

    Science.gov (United States)

    Chandran, Maneesh; Hoffman, Alon

    2016-06-01

    The most renowned property of diamond is its exceptional hardness. By depositing diamond films on tungsten carbide (WC-Co) and steel substrates, the hardness of diamond can be combined with the toughness of these materials, resulting in an excellent wear resistance material for tribological applications. However, poor adhesion of diamond coating on these substrates leads to a lesser lifetime for the diamond coated tools than expected. The prime reasons for the lack of proper adhesion are the preferential formation of graphitic layer at the interface due to the catalytic activities of cobalt/iron and the interfacial residual stresses due to the mismatch in thermal expansion coefficients of diamond (1.5  ×  10-6 K-1) and WC-Co (5.2  ×  10-6 K-1) or steel (12  ×  10-6 K-1). In this review, we discuss the possibility of using a Cr-N interlayer as a diffusion barrier to prevent the catalytic activities of cobalt/iron and also to relax the interfacial residual stresses to some extent to enhance the adhesion of diamond coatings on these substrates. An overview of the most pertinent results of the last two decades, including the recent progress is introduced. We describe in detail how the Cr-N interlayer with the desired properties is fabricated. We give a concise overview of diamond deposition process, including the methods to vary the grain size from microcrystalline to nanocrystalline, which are suitable for some tribological applications. We describe in detail on surface and interface analysis, residual stress measurements, assessment adhesion strength and tribological performance of diamond coated WC-Co and steel substrates using various characterization techniques. We conclude by highlighting the current progress and future perspectives of diamond coatings on these substrates for tribological applications.

  3. Intergranular fracture in nanocrystalline metals

    Science.gov (United States)

    Farkas, D.; van Swygenhoven, H.; Derlet, P. M.

    2002-08-01

    Crack propagation studies in nanocrystalline Ni samples with mean grain sizes ranging from 5 to 12 nm are reported using atomistic simulations. For all grain sizes pure intergranular fracture is observed. Intergranular fracture is shown to proceed by the coalescence of microvoids formed at the grain boundaries ahead of the crack. The energy released during propagation is higher than the Griffith value, indicating an additional grain-boundary accommodation mechanism.

  4. Structure and properties of diamond and diamond-like films

    Energy Technology Data Exchange (ETDEWEB)

    Clausing, R.E. [Oak Ridge National Lab., TN (United States)

    1993-01-01

    This section is broken into four parts: (1) introduction, (2) natural IIa diamond, (3) importance of structure and composition, and (4) control of structure and properties. Conclusions of this discussion are that properties of chemical vapor deposited diamond films can compare favorably with natural diamond, that properties are anisotropic and are a strong function of structure and crystal perfection, that crystal perfection and morphology are functions of growth conditions and can be controlled, and that the manipulation of texture and thereby surface morphology and internal crystal perfection is an important step in optimizing chemically deposited diamond films for applications.

  5. Structure and thermal stability of nanocrystalline materials

    Indian Academy of Sciences (India)

    B S Murty; M K Datta; S K Pabi

    2003-02-01

    Nanocrystalline materials, which are expected to play a key role in the next generation of human civilization, are assembled with nanometre-sized “building blocks” consisting of the crystalline and large volume fractions of intercrystalline components. In order to predict the unique properties of nanocrystalline materials, which are a combination of the properties of the crystalline and intercrystalline regions, it is essential to understand precisely how the structures of crystalline and intercrystalline regions vary with decrease in crystallite size. In addition, study of the thermal stability of nanocrystalline materials against significant grain growth is both scientific and technological interest. A sharp increase in grain size (to micron levels) during consolidation of nanocrystalline powders to obtain fully dense materials may consequently result in the loss of some unique properties of nanocrystalline materials. Therefore, extensive interest has been generated in exploring the size effects on the structure of crystalline and intercrystalline region of nanocrystalline materials, and the thermal stability of nanocrystalline materials against significant grain growth. The present article is aimed at understanding the structure and stability of nanocrystalline materials.

  6. Shengli Diamond Bits

    Institute of Scientific and Technical Information of China (English)

    Yang Yukun; Han Tao

    1995-01-01

    @@ The geologic condition of Shengli Oilfield (SLOF)is complicated and the range of the rock drillability is wide. For more than 20 years,Shengli Drilling Technology Research Institute, in view of the formation conditions of SLOF,has done a lot of effort and obtained many achivements in design,manufacturing technology and field service. Up to now ,the institute has developed several ten kinds of diamond bits applicable for drilling and coring in formations from extremely soft to hard.

  7. Diamond turning of glass

    Energy Technology Data Exchange (ETDEWEB)

    Blackley, W.S.; Scattergood, R.O.

    1988-12-01

    A new research initiative will be undertaken to investigate the critical cutting depth concepts for single point diamond turning of brittle, amorphous materials. Inorganic glasses and a brittle, thermoset polymer (organic glass) are the principal candidate materials. Interrupted cutting tests similar to those done in earlier research are Ge and Si crystals will be made to obtain critical depth values as a function of machining parameters. The results will provide systematic data with which to assess machining performance on glasses and amorphous materials

  8. Electrostatic Self-Assembly of Diamond Nanoparticles onto Al- and N-Polar Sputtered Aluminum Nitride Surfaces

    Directory of Open Access Journals (Sweden)

    Taro Yoshikawa

    2016-11-01

    Full Text Available Electrostatic self-assembly of diamond nanoparticles (DNPs onto substrate surfaces (so-called nanodiamond seeding is a notable technique, enabling chemical vapor deposition (CVD of nanocrystalline diamond thin films on non-diamond substrates. In this study, we examine this technique onto differently polarized (either Al- or N-polar c-axis oriented sputtered aluminum nitride (AlN film surfaces. This investigation shows that Al-polar films, as compared to N-polar ones, obtain DNPs with higher density and more homogeneously on their surfaces. The origin of these differences in density and homogeneity is discussed based on the hydrolysis behavior of AlN surfaces in aqueous suspensions.

  9. Diamond Pixel Detectors and 3D Diamond Devices

    Science.gov (United States)

    Venturi, N.

    2016-12-01

    Results from detectors of poly-crystalline chemical vapour deposited (pCVD) diamond are presented. These include the first analysis of data of the ATLAS Diamond Beam Monitor (DBM). The DBM module consists of pCVD diamond sensors instrumented with pixellated FE-I4 front-end electronics. Six diamond telescopes, each with three modules, are placed symmetrically around the ATLAS interaction point. The DBM tracking capabilities allow it to discriminate between particles coming from the interaction point and background particles passing through the ATLAS detector. Also, analysis of test beam data of pCVD DBM modules are presented. A new low threshold tuning algorithm based on noise occupancy was developed which increases the DBM module signal to noise ratio significantly. Finally first results from prototypes of a novel detector using pCVD diamond and resistive electrodes in the bulk, forming a 3D diamond device, are discussed. 3D devices based on pCVD diamond were successfully tested with test beams at CERN. The measured charge is compared to that of a strip detector mounted on the same pCVD diamond showing that the 3D device collects significantly more charge than the planar device.

  10. Bulk nano-crystalline alloys

    OpenAIRE

    T.-S. Chin; Lin, C. Y.; Lee, M.C.; R.T. Huang; S. M. Huang

    2009-01-01

    Bulk metallic glasses (BMGs) Fe–B–Y–Nb–Cu, 2 mm in diameter, were successfully annealed to become bulk nano-crystalline alloys (BNCAs) with α-Fe crystallite 11–13 nm in size. A ‘crystallization-and-stop’ model was proposed to explain this behavior. Following this model, alloy-design criteria were elucidated and confirmed successful on another Fe-based BMG Fe–B–Si–Nb–Cu, 1 mm in diameter, with crystallite sizes 10–40 nm. It was concluded that BNCAs can be designed in general by the proposed cr...

  11. High efficiency diamond solar cells

    Science.gov (United States)

    Gruen, Dieter M.

    2008-05-06

    A photovoltaic device and method of making same. A layer of p-doped microcrystalline diamond is deposited on a layer of n-doped ultrananocrystalline diamond such as by providing a substrate in a chamber, providing a first atmosphere containing about 1% by volume CH.sub.4 and about 99% by volume H.sub.2 with dopant quantities of a boron compound, subjecting the atmosphere to microwave energy to deposit a p-doped microcrystalline diamond layer on the substrate, providing a second atmosphere of about 1% by volume CH.sub.4 and about 89% by volume Ar and about 10% by volume N.sub.2, subjecting the second atmosphere to microwave energy to deposit a n-doped ultrananocrystalline diamond layer on the p-doped microcrystalline diamond layer. Electrodes and leads are added to conduct electrical energy when the layers are irradiated.

  12. Designing of concrete diamond sawblade

    Institute of Scientific and Technical Information of China (English)

    ZHANG Shao-he; DING Xin-yu; ZHOU Jia-xiang

    2005-01-01

    By analyzing the abrasive theory of concrete diamond sawblade, the proposal that the diamond should be selected by its function in cutting concrete is presented. The part of the big grit diamonds cut rock, and the part of the small grit diamonds improve the wearability of the matrix. The contrast tests are done with different shapes of sawbaldes in split segment, slant "U" slot segment, sandwich segment, turbo segment and three-slot segment. The special shapes of sawblades can improve the effect of cooling and the removing ability of the rock powder. The data of tests show that the efficiency of cutting and the life of sawblades are improved by designing the diamond prescription and using the especial geometry of segment.

  13. Primitive helium in diamonds

    Science.gov (United States)

    Ozima, M.; Zashu, S.

    1983-03-01

    He-3/He-4 isotopic ratio analyses of 13 diamond stones from unspecified mines in South Africa yield values ranging from less than 10 to the -7th to 0.00032 + or - 0.000025. The latter value is higher than the primordial He-3/He-4 ratio in meteorites, and close to the ratio for solar type He. It is suggested that these elevated values may represent primitive He which has evolved little, in view of its minute increase in radiogenic He-4, since the earth's formation.

  14. Heteroepitaxial Diamond Growth

    Science.gov (United States)

    1993-01-12

    interstitials, respectively. The energies required for the planar to puckered distortion are 4.3 eV on Ni(l 11), 3.0 eV with the Na interstitial, 3.6 eV with H...give consideration to the crystallographic I alignment between diamond tiles to minimize dislocation densities at the " seams ". 3 Methods of checking the...crystallographic alignment (non-destructively) and assessing the dislocation densities at seams must be used to establish the viability of 3 any

  15. Diamond Anvil Cell Techniques

    Science.gov (United States)

    Piermarini, Gasper J.

    It has often been said that scientific advances are made either in a dramatic and revolutionary way, or, as in the case of the diamond anvil cell (DAC), in a slow and evolutionary manner over a period of several years. For more than 2 decades, commencing in 1958, the DAC developed stepwise from a rather crude qualitative instrument to the sophisticated quantitative research tool it is today, capable of routinely producing sustained static pressures in the multi-megabar range and readily adaptable to numerous scientific measurement techniques because of its optical accessibility, miniature size, and portability.

  16. Effect of substrate roughness on growth of diamond by hot filament CVD

    Indian Academy of Sciences (India)

    Awadesh K Mallik; S R Binu; L N Satapathy; Chandrabhas Narayana; Md Motin Seikh; S A Shivashankar; S K Biswas

    2010-06-01

    Polycrystalline diamond coatings are grown on Si (100) substrate by hot filament CVD technique. We investigate here the effect of substrate roughening on the substrate temperature and methane concentration required to maintain high quality, high growth rate and faceted morphology of the diamond coatings. It has been shown that as we increase the substrate roughness from 0.05 m to 0.91 m (centre line average or CLA) there is enhancement in deposited film quality (Raman peak intensity ratio of 3 to non-3 content increases from 1.65 to 7.13) and the substrate temperature can be brought down to 640°C without any additional substrate heating. The coatings grown at adverse conditions for 3 deposition has cauliflower morphology with nanocrystalline grains and coatings grown under favourable 3 condition gives clear faceted grains.

  17. Method and article of manufacture corresponding to a composite comprised of ultra nonacrystalline diamond, metal, and other nanocarbons useful for thermoelectric and other applications

    Science.gov (United States)

    Gruen, Dieter M.

    2010-05-18

    One provides (101) disperse ultra-nanocrystalline diamond powder material that comprises a plurality of substantially ordered crystallites that are each sized no larger than about 10 nanometers. One then reacts (102) these crystallites with a metallic component. The resultant nanowire is then able to exhibit a desired increase with respect to its ability